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Sample records for silicon boron fe5si2b

  1. Effect of Si/Fe ratio on the boron and phosphorus doping efficiency of β-FeSi2 by magnetron sputtering

    International Nuclear Information System (INIS)

    Xu Jiaxiong; Yao Ruohe

    2011-01-01

    Boron-doped or phosphorus-doped β-FeSi 2 thin films have been prepared on silicon substrate by magnetron sputtering. Effects of Si/Fe ratio on the boron and phosphorus doping efficiencies have been studied from the resistivities of doped β-FeSi 2 thin films and current-voltage characteristics of doped β-FeSi 2 /Si heterojunctions. The experimental results reveal that the carrier concentration and doping efficiency of boron or phosphorus dopants at the Fe-rich side are higher than that at the Si-rich side. The effect of Si/Fe ratio can be deduced from the comparison of the formation energies under two extreme conditions. At the Fe-rich limit condition, the formation energy of boron or phosphorous doping is lower than that at the Si-rich condition. Therefore, the activation of impurities is more effective at the Fe-rich side. These results demonstrate that the boron-doped and phosphorous-doped β-FeSi 2 thin films should be kept at the Fe-rich side to avoid the unexpected doping sites and low doping efficiency.

  2. Correction: Electronic structure of the boron fullerene B14 and its silicon derivatives B13Si+, B13Si- and B12Si2: a rationalization using a cylinder model.

    Science.gov (United States)

    Van Duong, Long; Nguyen, Minh Tho

    2016-08-28

    Correction for 'Electronic structure of the boron fullerene B 14 and its silicon derivatives B 13 Si + , B 13 Si - and B 12 Si 2 : a rationalization using a cylinder model' by Long Van Duong et al., Phys. Chem. Chem. Phys., 2016, 18, 17619-17626.

  3. Electronic structure of the boron fullerene B14 and its silicon derivatives B13Si(+), B13Si(-) and B12Si2: a rationalization using a cylinder model.

    Science.gov (United States)

    Van Duong, Long; Nguyen, Minh Tho

    2016-06-29

    Geometric and electronic structures of the boron cluster B14 and its silicon derivatives B13Si(+), B13Si(-), and B12Si2 were determined using DFT calculations (TPSSh/6-311+G(d)). The B12Si2 fullerene, which is formed by substituting two B atoms at two apex positions of the B14 fullerene by two Si atoms, was also found as the global minimum structure. We demonstrated that the electronic structure and orbital configuration of these small fullerenes can be predicted by the wavefunctions of a particle on a cylinder. The early appearance of high angular node MOs in B14 and B12Si2 can be understood by this simple model. Replacement of one B atom at a top position of B14 by one Si atom, followed by the addition or removal of one electron does not lead to a global minimum fullerene structure for the anion B13Si(-) and cation B13Si(+). The early appearance of the 5σ1 orbital in B13Si(+) causes a lower stability for the fullerene-type structure.

  4. Electronic structures and thermochemical properties of the small silicon-doped boron clusters B(n)Si (n=1-7) and their anions.

    Science.gov (United States)

    Tai, Truong Ba; Kadłubański, Paweł; Roszak, Szczepan; Majumdar, Devashis; Leszczynski, Jerzy; Nguyen, Minh Tho

    2011-11-18

    We perform a systematic investigation on small silicon-doped boron clusters B(n)Si (n=1-7) in both neutral and anionic states using density functional (DFT) and coupled-cluster (CCSD(T)) theories. The global minima of these B(n)Si(0/-) clusters are characterized together with their growth mechanisms. The planar structures are dominant for small B(n)Si clusters with n≤5. The B(6)Si molecule represents a geometrical transition with a quasi-planar geometry, and the first 3D global minimum is found for the B(7)Si cluster. The small neutral B(n)Si clusters can be formed by substituting the single boron atom of B(n+1) by silicon. The Si atom prefers the external position of the skeleton and tends to form bonds with its two neighboring B atoms. The larger B(7)Si cluster is constructed by doping Si-atoms on the symmetry axis of the B(n) host, which leads to the bonding of the silicon to the ring boron atoms through a number of hyper-coordination. Calculations of the thermochemical properties of B(n)Si(0/-) clusters, such as binding energies (BE), heats of formation at 0 K (ΔH(f)(0)) and 298 K (ΔH(f)([298])), adiabatic (ADE) and vertical (VDE) detachment energies, and dissociation energies (D(e)), are performed using the high accuracy G4 and complete basis-set extrapolation (CCSD(T)/CBS) approaches. The differences of heats of formation (at 0 K) between the G4 and CBS approaches for the B(n)Si clusters vary in the range of 0.0-4.6 kcal mol(-1). The largest difference between two approaches for ADE values is 0.15 eV. Our theoretical predictions also indicate that the species B(2)Si, B(4)Si, B(3)Si(-) and B(7)Si(-) are systems with enhanced stability, exhibiting each a double (σ and π) aromaticity. B(5)Si(-) and B(6)Si are doubly antiaromatic (σ and π) with lower stability. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. The ternary system nickel-boron-silicon

    International Nuclear Information System (INIS)

    Lugscheider, E.; Reimann, H.; Knotek, O.

    1975-01-01

    The ternary system Nickel-Boron-Silicon was established at 850 0 C by means of X-ray diffraction, metallographic and micro-hardness examinations. The well known binary nickel borides and silicides resp. were confirmed. In the boron-silicon system two binary phases, SiBsub(4-x) with x approximately 0.7 and SiB 6 were found the latter in equilibrium with the β-rhombohedral boron. Confirming the two ternary silicon borides a greater homogeneity range was found for Ni 6 Si 2 B, the phase Nisub(4,6)Si 2 B published by Uraz and Rundqvist can better be described by the formula Nisub(4.29)Si 2 Bsub(1.43). In relation to further investigations we measured melting temperatures in ternary Ni-10 B-Si alloys by differential thermoanalysis. (author)

  6. Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD

    Energy Technology Data Exchange (ETDEWEB)

    Pawbake, Amit [School of Energy Studies, Savitribai Phule Pune University, Pune 411 007 (India); Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Mayabadi, Azam; Waykar, Ravindra; Kulkarni, Rupali; Jadhavar, Ashok [School of Energy Studies, Savitribai Phule Pune University, Pune 411 007 (India); Waman, Vaishali [Modern College of Arts, Science and Commerce, Shivajinagar, Pune 411 005 (India); Parmar, Jayesh [Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Bhattacharyya, Somnath [Department of Metallurgical and Materials Engineering, IIT Madras, Chennai 600 036 (India); Ma, Yuan‐Ron [Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan (China); Devan, Rupesh; Pathan, Habib [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Jadkar, Sandesh, E-mail: sandesh@physics.unipune.ac.in [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

    2016-04-15

    Highlights: • Boron doped nc-3C-SiC films prepared by HW-CVD using SiH{sub 4}/CH{sub 4}/B{sub 2}H{sub 6}. • 3C-Si-C films have preferred orientation in (1 1 1) direction. • Introduction of boron into SiC matrix retard the crystallanity in the film structure. • Film large number of SiC nanocrystallites embedded in the a-Si matrix. • Band gap values, E{sub Tauc} and E{sub 04} (E{sub 04} > E{sub Tauc}) decreases with increase in B{sub 2}H{sub 6} flow rate. - Abstract: Boron doped nanocrystalline cubic silicon carbide (3C-SiC) films have been prepared by HW-CVD using silane (SiH{sub 4})/methane (CH{sub 4})/diborane (B{sub 2}H{sub 6}) gas mixture. The influence of boron doping on structural, optical, morphological and electrical properties have been investigated. The formation of 3C-SiC films have been confirmed by low angle XRD, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), Fourier transform infra-red (FTIR) spectroscopy and high resolution-transmission electron microscopy (HR-TEM) analysis whereas effective boron doping in nc-3C-SiC have been confirmed by conductivity, charge carrier activation energy, and Hall measurements. Raman spectroscopy and HR-TEM analysis revealed that introduction of boron into the SiC matrix retards the crystallanity in the film structure. The field emission scanning electron microscopy (FE-SEM) and non contact atomic force microscopy (NC-AFM) results signify that 3C-SiC film contain well resolved, large number of silicon carbide (SiC) nanocrystallites embedded in the a-Si matrix having rms surface roughness ∼1.64 nm. Hydrogen content in doped films are found smaller than that of un-doped films. Optical band gap values, E{sub Tauc} and E{sub 04} decreases with increase in B{sub 2}H{sub 6} flow rate.

  7. Novel Amorphous Fe-Zr-Si(Cu) Boron-free Alloys

    Science.gov (United States)

    Kopcewicz, M.; Grabias, A.; Latuch, J.; Kowalczyk, M.

    2010-07-01

    Novel amorphous Fe80(ZrxSi20-x-y)Cuy boron-free alloys, in which boron was completely replaced by silicon as a glass forming element, have been prepared in the form of ribbons by a melt quenching technique. The X-ray diffraction and Mössbauer spectroscopy measurements revealed that the as-quenched ribbons with the composition of x = 6-10 at. % and y = 0, 1 at. % are predominantly amorphous. DSC measurements allowed the estimation of the crystallization temperatures of the amorphous alloys. The soft magnetic properties have been studied by the specialized rf-Mössbauer technique in which the spectra were recorded during an exposure of the samples to the rf field of 0 to 20 Oe at 61.8 MHz. Since the rf-collapse effect observed is very sensitive to the local anisotropy fields it was possible to evaluate the soft magnetic properties of amorphous alloys studied. The rf-Mössbauer studies were accompanied by the conventional measurements of the quasi-static hysteresis loops from which the magnetization and coercive fields were estimated. It was found that amorphous Fe-Zr-Si(Cu) alloys are magnetically very soft, comparable with those of the conventional amorphous B-containing Fe-based alloys.

  8. Magnetic and structural properties of ferromagnetic Fe{sub 5}PB{sub 2} and Fe{sub 5}SiB{sub 2} and effects of Co and Mn substitutions

    Energy Technology Data Exchange (ETDEWEB)

    McGuire, Michael A., E-mail: McGuireMA@ornl.gov; Parker, David S. [Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

    2015-10-28

    Crystallographic and magnetic properties of Fe{sub 5}PB{sub 2}, Fe{sub 4}CoPB{sub 2}, Fe{sub 4}MnPB{sub 2}, Fe{sub 5}SiB{sub 2}, Fe{sub 4}CoSiB{sub 2}, and Fe{sub 4}MnSiB{sub 2} are reported. All adopt the tetragonal Cr{sub 5}B{sub 3} structure-type and are ferromagnetic at room temperature with easy axis of magnetization along the c-axis. The spin reorientation in Fe{sub 5}SiB{sub 2} is observed as an anomaly in the magnetization near 170 K and is suppressed by substitution of Co or Mn for Fe. The silicides are found to generally have larger magnetic moments than the phosphides, but the data suggest smaller magnetic anisotropy in the silicides. Cobalt substitution reduces the Curie temperatures by more than 100 K and ordered magnetic moments by 16%–20%, while manganese substitution has a much smaller effect. This suggests Mn moments align ferromagnetically with the Fe and that Co does not have an ordered moment in these structures. Anisotropic thermal expansion is observed in Fe{sub 5}PB{sub 2} and Fe{sub 5}SiB{sub 2}, with negative thermal expansion seen along the c-axis of Fe{sub 5}SiB{sub 2}. First principles calculations of the magnetic properties of Fe{sub 5}SiB{sub 2} and Fe{sub 4}MnSiB{sub 2} are reported. The results, including the magnetic moment and anisotropy, are in good agreement with experiment.

  9. Endotaxially stabilized B2-FeSi nanodots in Si (100) via ion beam co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cassidy, Cathal, E-mail: c.cassidy@oist.jp; Singh, Vidyadhar; Grammatikopoulos, Panagiotis [Nanoparticles by Design Unit, Okinawa Institute of Science and Technology (OIST) Graduate University, 1919-1 Onna-Son, Okinawa 904-0495 (Japan); Kioseoglou, Joseph [Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece); Lal, Chhagan [Department of Physics, University of Rajasthan, Jaipur, Rajasthan 302005 (India); Sowwan, Mukhles, E-mail: mukhles@oist.jp [Nanoparticles by Design Unit, Okinawa Institute of Science and Technology (OIST) Graduate University, 1919-1 Onna-Son, Okinawa 904-0495 (Japan); Nanotechnology Research Laboratory, Al-Quds University, East Jerusalem, P.O. Box 51000, Palestine (Country Unknown)

    2014-04-21

    We report on the formation of embedded B2-FeSi nanodots in [100]-oriented Si substrates, and investigate the crystallographic mechanism underlying the stabilization of this uncommon, bulk-unstable, phase. The nanodots were approximately 10 nm in size, and were formed by iron thin film deposition and subsequent annealing. Cross-sectional transmission electron microscopy, energy loss spectroscopy mapping, and quantitative image simulation and analysis were utilized to identify the phase, strain, and orientational relationship of the nanodots to the host silicon lattice. X-ray photoelectron spectroscopy was utilized to analyze the surface composition and local bonding. Elasticity calculations yielded a nanodot residual strain value of −18%. Geometrical phase analysis graphically pinpointed the positions of misfit dislocations, and clearly showed the presence of pinned (11{sup ¯}1{sup ¯}){sub Si}//(100){sub FeSi}, and unpinned (2{sup ¯}42){sub Si}//(010){sub FeSi}, interfaces. This partial endotaxy in the host silicon lattice was the mechanism that stabilized the B2-FeSi phase.

  10. Effects of substrate temperature on structural and electrical properties of SiO2-matrix boron-doped silicon nanocrystal thin films

    International Nuclear Information System (INIS)

    Huang, Junjun; Zeng, Yuheng; Tan, Ruiqin; Wang, Weiyan; Yang, Ye; Dai, Ning; Song, Weijie

    2013-01-01

    In this work, silicon-rich SiO 2 (SRSO) thin films were deposited at different substrate temperatures (T s ) and then annealed by rapid thermal annealing to form SiO 2 -matrix boron-doped silicon-nanocrystals (Si-NCs). The effects of T s on the micro-structure and electrical properties of the SiO 2 -matrix boron-doped Si-NC thin films were investigated using Raman spectroscopy and Hall measurements. Results showed that the crystalline fraction and dark conductivity of the SiO 2 -matrix boron-doped Si-NC thin films both increased significantly when the T s was increased from room temperature to 373 K. When the T s was further increased from 373 K to 676 K, the crystalline fraction of 1373 K-annealed thin films decreased from 52.2% to 38.1%, and the dark conductivity reduced from 8 × 10 −3 S/cm to 5.5 × 10 −5 S/cm. The changes in micro-structure and dark conductivity of the SiO 2 -matrix boron-doped Si-NC thin films were most possibly due to the different amount of Si-O 4 bond in the as-deposited SRSO thin films. Our work indicated that there was an optimal T s , which could significantly increase the crystallization and conductivity of Si-NC thin films. Also, it was illumined that the low-resistivity SiO 2 -matrix boron-doped Si-NC thin films can be achieved under the optimal substrate temperatures, T s .

  11. Structural aspects of B2O3-substituted (PbO)0.5(SiO2)0.5 glasses

    International Nuclear Information System (INIS)

    Sudarsan, V.; Kulshreshtha, S.K.; Shrikhande, V.K.; Kothiyal, G.P.

    2002-01-01

    Lead borosilicate glasses having general formulae (PbO) 0.5-x (SiO 2 ) 0.5 (B 2 O 3 ) x with 0.0≤x≤0.4 and (PbO) 0.5 (SiO 2 ) 0.5-y (B 2 O 3 ) y with 0.0≤y≤0.5 have been prepared by a conventional melt-quench method and characterized by 29 Si, 11 B magic angle spinning (MAS) NMR techniques and infrared spectroscopy, as regards their structural features. From 29 Si NMR results, it has been inferred that with increasing concentration of boron oxide, (PbO) 0.5-x (SiO 2 ) 0.5 (B 2 O 3 )x glasses exhibit a systematic increase in the number of Q 4 structural units of Si at the expense of Q 2 structural units, along with the formation of Si-O-B linkages. On the other hand, for (PbO) 0.5 (SiO 2 ) 0.5-y (B 2 O 3 ) y glasses, there is no direct interaction between SiO 2 and B 2 O 3 in the glass network, as revealed by the 29 Si MAS NMR studies. Boron exists in both trigonal and tetrahedral configurations for these two series of glasses and for the (PbO) 0.5 (SiO 2 ) 0.5-y (B 2 O 3 ) y series of glasses; the relative concentration of these two structural units remains almost constant with increasing B 2 O 3 concentration. In contrast, for (PbO) 0.5-x (SiO 2 ) 0.5 (B 2 O 3 ) x glasses, there is a slight increase in the number of BO 3 structural units above x = 0.2, as there is a competition between SiO 2 and B 2 O 3 for interaction with Pb 2+ , thereby leading to the formation of BO 3 structural units. For both series of glasses, the thermal expansion coefficient is found to decrease with increasing B 2 O 3 concentration, the effect being more pronounced for the (PbO) 0.5-x (SiO 2 ) 0.5 (B 2 O 3 ) x series of glasses due to the increased concentration of Q 4 structural units of silicon and better cross-linking as a result of the formation of Si-O-B-type linkages. (author)

  12. Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2 or Si++B+

    International Nuclear Information System (INIS)

    Tsai, M.Y.; Streetman, B.G.

    1979-01-01

    Electrical properties of recrystallized amorphous silicon layers, formed by BF + 2 implants or Si + +B + implants, have been studied by differential resistivity and Hall-effect measurements. Electrical carrier distribution profiles show that boron atoms inside the amorphized Si layers can be fully activated during recrystallization at 550 0 C. The mobility is also recovered. However, the tail of the B distribution, located inside a damaged region near the original amorphous-crystalline interface, remains inactive. This inactive tail has been observed for all samples implanted with BF + 2 . Only in a thicker amorphous layer, formed for example by Si + predamage implants, can the entire B profile be activated. The etch rate of amorphous silicon in HF and the effect of fluorine on the recrystallization rate are also reported

  13. Morphology of the boron-rich phase along columnar grain boundary and its effect on the compression crack of Fe-6.5Si-0.05B alloy

    International Nuclear Information System (INIS)

    Fu Huadong; Zhang Zhihao; Yang Qiang; Xie Jianxin

    2011-01-01

    Research highlights: → Three morphologies of alloy phases were observed under different conditions. → Three different morphologies were thick-strip, fish-bone like and thin-strip. → These phases were all with enrichment of boron and dilution of silicon. → Three morphologies of alloy phases had different influences on mechanical property. - Abstract: The morphology of precipitated phases along Fe-6.5Si-0.05B columnar grain boundary and its effect on the initiation and propagation of compression cracks were investigated. Under the present experimental condition, alloy phases along the grain boundary exhibited three different morphologies, i.e., thick-strip, fish-bone like and thin-strip. These phases were all with enrichment of boron and dilution of silicon. The grain boundary with dendrite growth mode was apt to generate the thick-strip and fish-bone like phases, while the boundary with cellular growth mode was easy to form the thin-strip phase. The thick-strip phase was favorable to form 'weak plane' containing numerous micropores, which ultimately led to intergranular cracks. The fish-bone like phase was one of the main crack sources under the compression processing and easily caused transgranular cracks. The thin-strip phase enhanced the bond strength of the grain boundary and detained the crack propagation.

  14. Polarization and resistivity measurements of post-crystallization changes in amorphous Fe-B-Si alloys

    International Nuclear Information System (INIS)

    Chattoraj, I.; Bhattamishra, A.K.; Mitra, A.

    1993-01-01

    The effects of grain growth and compositional changes on the electrochemical behavior and the resistivity of amorphous iron-boron-silicon (Fe 77.5 B 15 Si 7.5 ) alloys after crystallization were studied. Deterioration of the protective passive film was observed, along with increased annealing. Potentiodynamic polarization provided excellent information about microstructural and chemical changes. It was concluded that electrochemical measurements could be used in conjunction with resistivity measurements in direct studies of grain growth and chemical changes occurring in different phases of the devitrified alloy

  15. Solidification phenomena in nickel base brazes containing boron and silicon

    International Nuclear Information System (INIS)

    Tung, S.K.; Lim, L.C.; Lai, M.O.

    1996-01-01

    Nickel base brazes containing boron and/or silicon as melting point depressants are used extensively in the repair and joining of aero-engine hot-section components. These melting point depressants form hard and brittle intermetallic compounds with nickel which are detrimental to the mechanical properties of brazed joints. The present investigation studied the microstructural evolution in nickel base brazes containing boron and/or silicon as melting point depressant(s) in simple systems using nickel as the base metal. The basic metallurgical reactions and formation of intermetallic compounds uncovered in these systems will be useful as a guide in predicting the evolution of microstructures in similar brazes in more complex systems involving base metals of nickel base superalloys. The four filler metal systems investigated in this study are: Ni-Cr-Si; Ni-Cr-B; Ni-Si-B and Ni-Cr-Fe-Si-B

  16. Shallow boron dopant on silicon An MD study

    International Nuclear Information System (INIS)

    Perez-Martin, A. Mari Carmen; Jimenez-Rodriguez, Jose J.; Jimenez-Saez, Jose Carlos

    2004-01-01

    Low energy boron bombardment of silicon has been simulated at room temperature by molecular dynamics (MD). Tersoff potential T3 was used in the simulation smoothly linked up with the universal potential. The boron-silicon (B-Si) interaction was simulated according to Tersoff potential for SiC but modified to account for the B-Si interaction. The algorithm can distinguish a B from a Si neighbour. Si-c, with (2 x 1) surface reconstruction, was bombarded with boron at 200 and 500 eV. These energies were initially chosen as good representative values of the low energy range. Reliable results require of a reasonable good statistic so that 1000-impact points were chosen uniformly distributed over a representative area of a 2 x 1 surface. The distribution of mean projected range for B is given. All kinds of point defect were looked for in a Si damaged target after bombardment. Energetically stable substitutional and interstitial configurations are presented and the relative appearances of the different types of interstitials, for both Si and B, are given. It is also determined the mean length of the distance to the first neighbours of defects

  17. Organometallic Routes into the Nanorealms of Binary Fe-Si Phases

    Directory of Open Access Journals (Sweden)

    Teddy M. Keller

    2010-02-01

    Full Text Available The Fe-Si binary system provides several iron silicides that have varied and exceptional material properties with applications in the electronic industry. The well known Fe-Si binary silicides are Fe3Si, Fe5Si3, FeSi, a-FeSi2 and b-FeSi2. While the iron-rich silicides Fe3Si and Fe5Si3 are known to be room temperature ferromagnets, the stoichiometric FeSi is the only known transition metal Kondo insulator. Furthermore, Fe5Si3 has also been demonstrated to exhibit giant magnetoresistance (GMR. The silicon-rich b-FeSi2 is a direct band gap material usable in light emitting diode (LED applications. Typically, these silicides are synthesized by traditional solid-state reactions or by ion beam-induced mixing (IBM of alternating metal and silicon layers. Alternatively, the utilization of organometallic compounds with reactive transition metal (Fe-carbon bonds has opened various routes for the preparation of these silicides and the silicon-stabilized bcc- and fcc-Fe phases contained in the Fe-Si binary phase diagram. The unique interfacial interactions of carbon with the Fe and Si components have resulted in the preferential formation of nanoscale versions of these materials. This review will discuss such reactions.

  18. Ceramic silicon-boron-carbon fibers from organic silicon-boron-polymers

    Science.gov (United States)

    Riccitiello, Salvatore R. (Inventor); Hsu, Ming-Ta S. (Inventor); Chen, Timothy S. (Inventor)

    1993-01-01

    Novel high strength ceramic fibers derived from boron, silicon, and carbon organic precursor polymers are discussed. The ceramic fibers are thermally stable up to and beyond 1200 C in air. The method of preparation of the boron-silicon-carbon fibers from a low oxygen content organosilicon boron precursor polymer of the general formula Si(R2)BR(sup 1) includes melt-spinning, crosslinking, and pyrolysis. Specifically, the crosslinked (or cured) precursor organic polymer fibers do not melt or deform during pyrolysis to form the silicon-boron-carbon ceramic fiber. These novel silicon-boron-carbon ceramic fibers are useful in high temperature applications because they retain tensile and other properties up to 1200 C, from 1200 to 1300 C, and in some cases higher than 1300 C.

  19. A pulse synthesis of beta-FeSi sub 2 layers on silicon implanted with Fe sup + ions

    CERN Document Server

    Batalov, R I; Terukov, E I; Kudoyarova, V K; Weiser, G; Kuehne, H

    2001-01-01

    The synthesis of thin beta-FeSi sub 2 films was performed by means of the Fe sup + ion implantation into Si (100) and the following nanosecond pulsed ion treatment of implanted layer. Using the beta-FeSi sub 2 beta-FeSi sub 2 e X-ray diffraction it is shown that the pulsed ion treatment results in the generation of the mixture of two phases: FeSi and beta-FeSi sub 2 with stressed crystal lattices. The following short-time annealing leads to the total transformation of the FeSi phase into the beta-FeSi sub 2 one. The Raman scattering data prove the generation of the beta-FeSi sub 2 at the high degree of the silicon crystallinity. The experimental results of the optical absorption testify to the formation of beta-FeSi sub 2 layers and precipitates with the straight-band structure. The photoluminescence signal at lambda approx = 1.56 mu m observes up to 210 K

  20. Stress impedance effect of FeCoSiB/Cu/FeCoSiB sandwich layers on flexible substrate

    International Nuclear Information System (INIS)

    Peng, B.; Zhang, W.L.; Liu, J.D.; Zhang, W.X.

    2011-01-01

    FeCoSiB/Cu/FeCoSiB sandwich layers were deposited on flexible substrate to develop flexible stress/strain sensors. The influence of stress on the impedance of the multilayers is reported. The results show that the variation of the impedance increases with the increase in deflection of the free end of the cantilever. A relative change in impedance of 6.4% is obtained in the FeCoSiB(1.5 μm)/Cu(0.25 μm)/FeCoSiB(1.5 μm) sandwich layers at 1 MHz with deflection of 2 mm. The stress impedance effects are sensitive to the frequency of the current and the thickness of both FeCoSiB and Cu layers. The stress impedance effect increases with the increase in the thickness of FeCoSiB or Cu layers. The stress impedance effect increases slightly with the increase in frequency and decreases with the further increase in frequency, which can be understood by the stress and frequency-dependent permeability of magnetic films. - Research highlights: → We deposited FeCoSiB/Cu/FeCoSiB multilayer on flexible substrate. → We studied the stress impedance effect of FeCoSiB/Cu/FeCoSiB multilayer. → Stress impedance effect increases with thickness of both FeCoSiB and Cu layer.→ Stress impedance effect is dependent on current frequency. → Results are understood using stress and frequency-dependent permeability.

  1. Effect of Boron on Microstructure and Microhardness Properties of Mo-Si-B Based Coatings Produced Via TIG Process

    Directory of Open Access Journals (Sweden)

    Islak S.

    2016-09-01

    Full Text Available In this study, Mo-Si-B based coatings were produced using tungsten inert gas (TIG process on the medium carbon steel because the physical, chemical, and mechanical properties of these alloys are particularly favourable for high-temperature structural applications. It is aimed to investigate of microstructure and microhardness properties of Mo-Si-B based coatings. Optical microscopy (OM, X-ray diffraction (XRD and scanning electron microscopy (SEM were used to characterize the microstructures of Mo-Si-B based coatings. The XRD results showed that microstructure of Mo–Si–B coating consists of α-Mo, α-Fe, Mo2B, Mo3Si and Mo5SiB2 phases. It was reported that the grains in the microstructure were finer with increasing amounts of boron which caused to occur phase precipitations in the grain boundary. Besides, the average microhardness of coatings changed between 735 HV0.3 and 1140 HV0.3 depending on boron content.

  2. LiBSi2: a tetrahedral semiconductor framework from boron and silicon atoms bearing lithium atoms in the channels.

    Science.gov (United States)

    Zeilinger, Michael; van Wüllen, Leo; Benson, Daryn; Kranak, Verina F; Konar, Sumit; Fässler, Thomas F; Häussermann, Ulrich

    2013-06-03

    Silicon swallows up boron: The novel open tetrahedral framework structure (OTF) of the Zintl phase LiBSi2 was made by applying high pressure to a mixture of LiB and elemental silicon. The compound represents a new topology in the B-Si net (called tum), which hosts Li atoms in the channels (see picture). LiBSi2 is the first example where B and Si atoms form an ordered common framework structure with B engaged exclusively in heteronuclear B-Si contacts.

  3. Microstructure and magnetocaloric effect in cast LaFe11.5Si1.5Bx (x=0.5, 1.0)

    International Nuclear Information System (INIS)

    Zhang, H.; Long, Y.; Cao, Q.; Mudryk, Ya.; Zou, M.; Gschneidner, K.A.; Pecharsky, V.K.

    2010-01-01

    Phase formation, structure, and the magnetocaloric effect (MCE) in as-cast LaFe 11.5 Si 1.5 B x (x=0.5, 1.0) compounds have been studied. The Curie temperatures, T C , are ∼211 and 230 K for x=0.5 and 1.0, respectively, which are higher than that of annealed LaFe 11.5 Si 1.5 (T C =183 K), while the maximum magnetic entropy changes at the respective T C under a magnetic field change of 0-5 T are 7.8 and 5.8 J/(kg K). Wavelength dispersive spectrometry (WDS) analysis shows that only a small fraction of boron atoms is dissolved in the NaZn 13 -type structure phase, and that the compositions of the as-cast LaFe 11.5 Si 1.5 B x (x=0.5, 1.0) alloys are much different from the intended nominal compositions. These as-cast alloys exhibit second-order magnetic phase transitions and low MCEs. However, based on the relative cooling power, the as-cast LaFe 11.5 Si 1.5 B x alloys are promising candidates for magnetic refrigerants over a wide temperature range.

  4. High sensitivity boron quantification in bulk silicon using the {sup 11}B(p,{alpha}{sub 0}){sup 8}Be nuclear reaction

    Energy Technology Data Exchange (ETDEWEB)

    Moro, Marcos V.; Silva, Tiago F. da; Added, Nemitala; Rizutto, Marcia A.; Tabacniks, Manfredo H. [Instituto de Fisica da Universidade de Sao Paulo, C.P. 66318, 05315-970 Sao Paulo, SP (Brazil); Neira, John B.; Neto, Joao B. F. [Institute of Research Tecnology, Cidade Universitaria, SP, 05508-091 (Brazil)

    2013-05-06

    There is a great need to quantify sub-ppm levels of boron in bulk silicon. There are several methods to analyze B in Si: Nuclear Reaction Analysis using the {sup 11}B(p,{alpha}{sub 0}){sup 8}Be reaction exhibits a quantification limit of some hundreds ppm of B in Si. Heavy Ion Elastic Recoil Detection Analysis offers a detection limit of 5 to 10 at. ppm. Secondary Ion Mass Spectrometry is the method of choice of the semiconductor industry for the analysis of B in Si. This work verifies the use of NRA to quantify B in Si, and the corresponding detection limits. Proton beam with 1.6 up to 2.6 MeV was used to obtain the cross-section of the {sup 11}B(p,{alpha}{sub 0}){sup 8}Be nuclear reaction at 170 Degree-Sign scattering angle. The results show good agreementwith literature indicating that the quantification of boron in silicon can be achieved at 100 ppm level (high sensitivity) at LAMFI-IFUSP with about 16% uncertainty. Increasing the detection solid angle and the collected beam charge, can reduce the detection limit to less than 100 ppm meeting present technological needs.

  5. Effect of wheel speed on magnetic and mechanical properties of melt spun Fe-6.5 wt.% Si high silicon steel

    Science.gov (United States)

    Ouyang, Gaoyuan; Jensen, Brandt; Tang, Wei; Dennis, Kevin; Macziewski, Chad; Thimmaiah, Srinivasa; Liang, Yongfeng; Cui, Jun

    2018-05-01

    Fe-Si electric steel is the most widely used soft magnetic material in electric machines and transformers. Increasing the silicon content from 3.2 wt.% to 6.5 wt.% brings about large improvement in the magnetic and electrical properties. However, 6.5 wt.% silicon steel is inherited with brittleness owing to the formation of B2 and D03 ordered phase. To obtain ductility in Fe-6.5wt.% silicon steel, the ordered phase has to be bypassed with methods like rapid cooling. In present paper, the effect of cooling rate on magnetic and mechanical properties of Fe-6.5wt.% silicon steel is studied by tuning the wheel speed during melt spinning process. The cooling rate significantly alters the ordering and microstructure, and thus the mechanical and magnetic properties. X-ray diffraction data shows that D03 ordering was fully suppressed at high wheel speeds but starts to nucleate at 10m/s and below, which correlates with the increase of Young's modulus towards low wheel speeds as tested by nanoindentation. The grain sizes of the ribbons on the wheel side decrease with increasing wheel speeds, ranging from ˜100 μm at 1m/s to ˜8 μm at 30m/s, which lead to changes in coercivity.

  6. Electroless siliconizing Fe-3% Cr-3% Si alloy

    International Nuclear Information System (INIS)

    Nurlina, Enung; Darmono, Budy; Purwadaria, Sunara

    2000-01-01

    In this research Fe-3%Cr-3%Mo-3%Si and Fe-3%Cr-3%Cu-3%Si alloys had been coated by silicon metal without electricity current which knows as electroless siliconizing. Coating was conducted by immersed sampler into melt fluoride-chloride salt bath at temperature of 750 o C for certain period. The layer consisted of Fe3Si phase. Observation by microscope optic and EDAX showed that the silicide layer were thick enough, adherent, free for crack and had silicon content on the surface more than 15%. The growth rate of silicide layer followed parabolic rate law, where the process predominantly controlled by interdiffusion rate in the solid phase. Key words : electroless siliconizing, the melt fluoride- chloride salt mix, silicide layer

  7. LiBSi{sub 2}: a tetrahedral semiconductor framework from boron and silicon atoms bearing lithium atoms in the channels

    Energy Technology Data Exchange (ETDEWEB)

    Zeilinger, Michael; Faessler, Thomas F. [Department of Chemistry, Technische Universitaet Muenchen, Garching (Germany); Wuellen, Leo van [Department of Physics, University of Augsburg (Germany); Benson, Daryn [Department of Physics, Arizona State University, Tempe, AZ (United States); Kranak, Verina F.; Konar, Sumit; Haeussermann, Ulrich [Department of Materials and Environmental Chemistry, Stockholm University (Sweden)

    2013-06-03

    Silicon swallows up boron. The novel open tetrahedral framework structure (OTF) of the Zintl phase LiBSi{sub 2} was made by applying high pressure to a mixture of LiB and elemental silicon. The compound represents a new topology in the B-Si net (called tum), which hosts Li atoms in the channels. LiBSi{sub 2} is the first example where B and Si atoms form an ordered common framework structure with B engaged exclusively in heteronuclear B-Si contacts. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. Thermodynamics of Boron Removal from Silicon Using CaO-MgO-Al2O3-SiO2 Slags

    Science.gov (United States)

    Jakobsson, Lars Klemet; Tangstad, Merete

    2018-04-01

    Slag refining is one of few metallurgical methods for removal of boron from silicon. It is important to know the thermodynamic properties of boron in slags to understand the refining process. The relation of the distribution coefficient of boron to the activity of silica, partial pressure of oxygen, and capacity of slags for boron oxide was investigated. The link between these parameters explains why the distribution coefficient of boron does not change much with changing slag composition. In addition, the thermodynamic properties of dilute boron oxide in CaO-MgO-Al2O3-SiO2 slags was determined. The ratio of the activity coefficient of boron oxide and silica was found to be the most important parameter for understanding changes in the distribution coefficient of boron for different slags. Finally, the relation between the activity coefficient of boron oxide and slag structure was investigated. It was found that the structure can explain how the distribution coefficient of boron changes depending on slag composition.

  9. Permeability and giant magnetoimpedance in Co69Fe4.5X1.5Si10B15 (X=Cr, Mn, Ni) amorphous ribbons

    International Nuclear Information System (INIS)

    Byon, Kwang Seok; Yu, Seong-Cho; Kim, Cheol Gi

    2001-01-01

    The magnetoimpedance (MI) has been measured in the amorphous ribbons of the soft ferromagnetic alloy Co 69 Fe 4.5 X 1.5 Si 10 B 15 (X=Cr, Mn, Ni) as functions of frequency (f). For all of the three samples, at low frequency, f≤5MHz, the MI ratio increases with increasing frequency, but the MI ratio decreases at high frequency, f≥5MHz. The MI profiles are not changed at low frequency regions of f≤1MHz in the amorphous ribbons. The MI ratio at high frequency of f=5MHz becomes 57% in Co 69 Fe 4.5 Cr 1.5 Si 10 B 15 , but the MI ratio becomes 30% in Co 69 Fe 4.5 Mn 1.5 Si 10 B 15 and Co 69 Fe 4.5 Ni 1.5 Si 10 B 15 . The MI ratio at f=10MHz becomes 45% in Co 69 Fe 4.5 Cr 1.5 Si 10 B 15 and the MI ratio becomes 23% in Co 69 Fe 4.5 Mn 1.5 Si 10 B 15 and Co 69 Fe 4.5 Ni 1.5 Si 10 B 15 , respectively. The maximum values of field sensitivity are 2.7(X=Cr), 2.5(X=Mn), 2.2(X=Ni)%/Oe for f=5MHz. [copyright] 2001 American Institute of Physics

  10. Dirac State in the FeB2 Monolayer with Graphene-Like Boron Sheet.

    Science.gov (United States)

    Zhang, Haijun; Li, Yafei; Hou, Jianhou; Du, Aijun; Chen, Zhongfang

    2016-10-12

    By introducing the commonly utilized Fe atoms into a two-dimensional (2D) honeycomb boron network, we theoretically designed a new Dirac material of FeB 2 monolayer with a Fermi velocity in the same order of graphene. The electron transfer from Fe atoms to B networks not only effectively stabilizes the FeB 2 networks but also leads to the strong interaction between the Fe and B atoms. The Dirac state in FeB 2 system primarily arises from the Fe d orbitals and hybridized orbital from Fe-d and B-p states. The newly predicted FeB 2 monolayer has excellent dynamic and thermal stabilities and is also the global minimum of 2D FeB 2 system, implying its experimental feasibility. Our results are beneficial to further uncovering the mechanism of the Dirac cones and providing a feasible strategy for Dirac materials design.

  11. Reduced-pressure chemical vapor deposition of boron-doped Si and Ge layers

    International Nuclear Information System (INIS)

    Bogumilowicz, Y.; Hartmann, J.M.

    2014-01-01

    We have studied the in-situ boron (B) doping of germanium (Ge) and silicon (Si) in Reduced Pressure-Chemical Vapor Deposition. Three growth temperatures have been investigated for the B-doping of Ge: 400, 600 and 750 °C at a constant growth pressure of 13300 Pa (i.e. 100 Torr). The B concentration in the Ge:B epilayer increases linearly with the diborane concentration in the gaseous phase. Single-crystalline Ge:B layers with B concentrations in-between 9 ∙ 10 17 and 1 ∙ 10 20 cm −3 were achieved. For the in-situ B doping of Si at 850 °C, two dichlorosilane mass flow ratios (MFR) have been assessed: F[SiH 2 Cl 2 ]/F[H 2 ] = 0.0025 and F[SiH 2 Cl 2 ]/F[H 2 ] = 0.0113 at a growth pressure of 2660 Pa (i.e. 20 Torr). Linear boron incorporation with the diborane concentration in the gas phase has been observed and doping levels in-between 3.5 ∙ 10 17 and 1 ∙ 10 20 cm −3 were achieved. We almost kept the same ratio of B versus Si atoms in the gas phase and in the Si epilayer. By contrast, roughly half of the B atoms present in the gas phase were incorporated in the Ge:B layers irrespective of the growth temperature. X-Ray Diffraction (XRD) allowed us to extract from the angular position of the Ge:B layer diffraction peak the substitutional B concentration. Values close to the B concentrations obtained by 4-probe resistivity measurements were obtained. Ge:B layers were smooth (< 1 m root mean square roughness associated with 20 × 20 μm 2 Atomic Force Microscopy images). Only for high F[B 2 H 6 ]/F[GeH 4 ] MFR (3.2 10 −3 ) did the Ge:B layers became rough; they were however still mono-crystalline (XRD). Above this MFR value, Ge:B layers became polycrystalline. - Highlights: • Boron doping of germanium and silicon in Reduced Pressure-Chemical Vapor Deposition • Linear boron incorporation in Ge:B and Si:B with the diborane flow • Single-crystal Ge:B layers with B concentrations in-between 9 ∙ 10 17 and 1 ∙ 10 20 cm −3 • Single-crystal Si:B

  12. Segregation of boron implanted into silicon on angular configurations of silicon/silicon dioxide oxidation interface

    CERN Document Server

    Tarnavskij, G A; Obrekht, M S

    2001-01-01

    One studies segregation of boron implanted into silicon when a wave (interface) of oxidation moves within it. There are four types of angular configurations of SiO sub 2 /Si oxidation interface, that is: direct and reverse shoulders, trench type cavities and a square. By means of computer-aided simulation one obtained and analyzed complex patterns of B concentration distribution within Si, SiO sub 2 domains and at SiO sub 2 /Si interface for all types of angular configurations of the oxidation interface

  13. The morphology of ceramic phases in B x C-SiC-Si infiltrated composites

    International Nuclear Information System (INIS)

    Hayun, S.; Frage, N.; Dariel, M.P.

    2006-01-01

    The present communication is concerned with the effect of the carbon source on the morphology of reaction bonded boron carbide (B 4 C). Molten silicon reacts strongly and rapidly with free carbon to form large, faceted, regular polygon-shaped SiC particles, usually embedded in residual silicon pools. In the absence of free carbon, the formation of SiC relies on carbon that originates from within the boron carbide particles. Examination of the reaction bonded boron carbide revealed a core-rim microstructure consisting of boron carbide particles surrounded by secondary boron carbide containing some dissolved silicon. This microstructure is generated as the outcome of a dissolution-precipitation process. In the course of the infiltration process molten Si dissolves some boron carbide until its saturation with B and C. Subsequently, precipitation of secondary boron carbide enriched with boron and silicon takes place. In parallel, elongated, strongly twinned, faceted SiC particles are generated by rapid growth along preferred crystallographic directions. This sequence of events is supported by X-ray diffraction and microcompositional analysis and well accounted for by the thermodynamic analysis of the ternary B-C-Si system. - Graphical abstract: Bright field TEM image of the rim area between two boron carbide grains

  14. Investigation of the morphology and electrical characteristics of FeSi2 quantum dots on silicon

    International Nuclear Information System (INIS)

    Dozsa, L.; Molnar, G.; Horvath, Zs.J.; Toth, A.L.; Gyulai, J.; Raineri, V.; Giannazzo, F.

    2004-01-01

    β-FeSi 2 quantum dots (QD) were grown by evaporating 2, 4 and 7 nm Fe onto Si(1 0 0) wafers and in situ annealed at 600 deg. C for 10 min. QDs were grown also by reactive deposition epitaxy (RDE) evaporating 2 nm Fe onto a 600 deg. C Si substrate and annealed further for 5 min. MIS structures were prepared by evaporating SiO x over the QDs and Al dots on the oxide. The SEM investigations show the density of the QDs is about 10 10 cm -2 in the 2 and 4 nm Fe samples, and it increases to about 3x10 11 cm -2 in the 7 nm Fe sample. The nanoscope investigation shows well resolved QDs only in the 7 nm Fe samples, but their density and size do not allow individual characterization of the QDs by scanning capacitance microscopic measurements. In the RDE samples the QDs are small and irregular, indicating the need for thicker Fe layer. Capacitance-voltage (C-V) measurements show point defects generated by silicidation which compensate the silicon doping (2x10 15 cm -3 ) in about 1 μm depth. C-V results show that in the RDE samples less point defect are generated, their concentration is lower than doping of the Si wafers. The electrical characteristics of MIS structures show that the room temperature deposited iron degrades the I-V characteristics, and induces leakage

  15. Improved ductility of Ni3Si by microalloying with boron or carbon

    International Nuclear Information System (INIS)

    Taub, A.I.; Briant, C.L.

    1989-01-01

    The effects of boron and carbon additions on the tendency for intergranular fracture in trinickel silicide intermetallics are reported. Melt spinning of Ni 77 Si 23 alloyed with 0.1 at. pct boron results in full bend ductility and complete transgranular fracture compared with brittle intergranular fracture for the unmodified compound. Alloying with 0.1 at. pct carbon also produced full bend ductility but a mixed mode failure (30 pct transgranular). For both carbon and boron additions, reducing the Ni concentration of the base compound results in a greater percentage of intergranular fracture. For Ni 77 Si 23 , the solubility limit is between 0.1 and 0.2 t. pct boron. For compounds with silicon concentrations of 23.5 and 24.0 at. pct, the solubility limit is less than 0.1 at. pct boron. Boron additions above the solubility limit result in Ni 3 B precipitates which degrade the bend ductility and increase the percentage of intergranular fracture. Alloying with carbon above the solubility limit ( 77 Si 23 , increasing the carbon concentration from 0.1 to 1.0 at. pct resulted in no change in the ductility. Auger examination of the grain boundary composition showed strong segregation of both boron and carbon. Enrichment in silicon concentration was also observed

  16. High quality β-FeSi2 thin films prepared on silicon (100) by using pulsed laser ablation of Fe target

    International Nuclear Information System (INIS)

    Xu, S.C.; Yang, C.; Liu, M.; Jiang, S.Z.; Ma, Y.Y.; Chen, C.S.; Gao, X.G.; Sun, Z.C.; Hu, B.; Wang, C.C.; Man, B.Y.

    2012-01-01

    High quality β-FeSi 2 thin films have been fabricated on silicon (100) substrate by the pulsed laser deposition (PLD) technique with the Fe and sintered FeSi 2 targets. The crystalline quality and surface morphology of the samples were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM), X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy. These results indicate that the samples prepared with a Fe target can acquire a better crystalline quality and a smoother surface than those with a sintered FeSi 2 target. The reasons were discussed with subsurface superheating mechanism. The intrinsic PL spectrum attributed to the interband transition of β-FeSi 2 for all the samples was compared, showing that the film prepared with Fe target can acquire a good PL property by optimizing experimental parameters. It is suggested that sputtering Fe on Si substrate by the pulsed laser offers a cheap and convenient way to prepare the β-FeSi 2 thin films. -- Highlights: ► β-FeSi 2 films were fabricated by PLD technique with the Fe and FeSi 2 targets. ► The films prepared with Fe target have good crystalline quality and smooth surface. ► The Fe target prepared film acquired a high PL intensity. ► Sputtering Fe on Si substrate offers a convenient way to prepare the β-FeSi 2 films.

  17. FeNbB bulk metallic glass with high boron content

    Energy Technology Data Exchange (ETDEWEB)

    Stoica, M.; Das, Jayanta; Eckert, Juergen [IFW Dresden, Institute for Complex Materials, P.O. Box 270016, D-01171 Dresden (Germany); Hajlaoui, Khalil; Yavari, Alain Reza [LTPCM-CNRS, I.N.P. Grenoble, 1130 Rue de la Piscine, BP 75, F-38402 University Campus (France)

    2007-07-01

    Fe-based alloys able to form magnetic bulk metallic glasses (BMGs) are of the type transition metal - metalloid and often contain 5 or more elements. Usually, the metalloid content is around 20 atomic %. Very recently, the Fe{sub 66}Nb{sub 4}B{sub 30} alloy was found to be able to form BMG by copper mold casting technique, despite its high metalloid content. Several composition with boron contents around 30 at. % or even higher were calculated since 1993 as possible compositions of the remaining amorphous matrix after the first stage of nanocrystallization of Finemet-type Fe{sub 77}Si{sub 14}B{sub 9} glassy ribbons with 0.5 to 1 atomic % Cu and a few percent Nb addition. Melt-spun ribbons of all calculated compositions were found to be glassy. The composition of the ternary Fe-based BMG investigated in the present study resulted as an optimization of all possibilities. The alloy is ferromagnetic with glass transition temperature T{sub g}=845 K, crystallisation temperature T{sub x}=876 K, liquidus temperature T{sub liq}=1451 K and mechanical strength of 4 GPa. The coercivity of as-cast samples is very low, around 1.5 A/m. The present contribution aims at discussing the thermal stability, mechanical and magnetic properties of the Fe{sub 66}Nb{sub 4}B{sub 30} BMG.

  18. NMR investigation of boron impurities in refined metallurgical grade silicon

    Energy Technology Data Exchange (ETDEWEB)

    Grafe, Hans-Joachim; Loeser, Wolfgang; Schmitz, Steffen; Sakaliyska, Miroslava [Leibniz Institute for Solid State and Materials Research (IFW), Dresden (Germany); Wurmehl, Sabine [Leibniz Institute for Solid State and Materials Research (IFW), Dresden (Germany); Institute for Solid State Physics, Technische Universitaet Dresden (Germany); Eisert, Stefan; Reichenbach, Birk; Mueller, Tim [Adensis GmbH, Dresden (Germany); Acker, Joerg; Rietig, Anja; Ducke, Jana [Department of Chemistry, Faculty for Natural Sciences, Brandenburg Technical University Cottbus-Senftenberg, Senftenberg (Germany)

    2015-09-15

    The nuclear magnetic resonance (NMR) method was applied for tracking boron impurities in the refining process of metallurgical grade (MG) silicon. From the NMR signal of the {sup 11}B isotope at an operating temperature 4.2 K, the boron concentration can be estimated down to the order of 1-10 wppm B. After melting and resolidification of MG-Si alloyed with Ca and Ti, a major fraction of B impurities remains in the Si solid solution as inferred from the characteristic NMR frequency. The alloying element Ti does not form substantial fractions of TiB{sub 2}. Acid leaching of crushed powders of MG-Si alloyed with Ca and Ti can diminish the initial impurity content of B suggesting its accumulation in the grain boundary phases. NMR signals of TiB{sub 2} at 4.2 K and room temperature (RT), and of poly-Si with different B doping at 4.2 K. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. A novel boron-rich quaternary scandium borocarbosilicide Sc3.67-xB41.4-y-zC0.67+zSi0.33-w

    International Nuclear Information System (INIS)

    Tanaka, Takaho; Yamamoto, Akiji; Sato, Akira

    2004-01-01

    A novel quaternary scandium borocarbosilicide Sc 3.67-x B 41.4-y-z C 0.67+z Si 0.33-w was found. Single crystallites were obtained as an intergrowth phase in the float-zoned single crystal of Sc 0.83-x B 10.0-y C 0.17+y Si 0.083-z that has a face-centered cubic crystal structure. Single crystal structure analysis revealed that the compound has a hexagonal structure with lattice constants a = b = 1.43055(8) nm and c = 2.37477(13) nm and space group P6-barm2 (No. 187). The crystal composition calculated from the structure analysis for the crystal with x = 0.52, y = 1.42, z = 1.17, and w = 0.02 was ScB 12.3 C 0.58 Si 0.10 and that agreed rather well with the composition of ScB 11.5 C 0.61 Si 0.04 measured by EPMA. In the crystal structure that is a new structure type of boron-rich borides, there are 79 structurally independent atomic sites, 69 boron and/or carbon sites, two silicon sites and eight scandium sites. Boron and carbon form seven structurally independent B 12 icosahedra, one B 9 polyhedron, one B 10 polyhedron, one irregularly shaped B 16 polyhedron in which only 10.7 boron atoms are available because of partial occupancies and 10 bridging sites. All polyhedron units and bridging site atoms interconnect each other forming a three-dimensional boron framework structure. Sc atoms reside in the open spaces in the boron framework structure

  20. Phase transformation in rapidly quenched Fe-Cr-Co-Mo-Ti-Si-B alloys

    Science.gov (United States)

    Zhukov, D. G.; Shubakov, V. S.; Zhukova, E. Kh; Gorshenkov, M. V.

    2018-03-01

    The research results of phase transformations in Fe-24Cr-16Co-3Mo-0.2Ti-1Si-B alloys (with a boron content of 1 to 3% by mass) obtained by rapid quenching are presented. The structure formation regularities during the melt spinning and during the subsequent crystallization annealing in rapidly quenched bands of the Fe-Cr-Co-Mo-Ti-Si-B system alloys were studied. The changes in the phase composition of the rapidly quenched Fe-Cr-Co-Mo-Ti- Si-B system alloys after quenching at various quench rates and at different boron concentrations in the alloys are studied. It is shown that during crystallization from an amorphous state, at temperatures above 570 °C, in addition to the α-phase, the σ-phase appears first, followed by the γ-phase. Heat treatment of rapidly quenched bands to high-coercive state was carried out. A qualitative assessment of magnetic properties in a high-coercivity state was carried out. An evaluation of the level of magnetic properties in a high-coercivity state allows us to conclude that the application of a magnetic field during crystallization from an amorphous state leads to anisotropy of the magnetic properties, that is, an anisotropic effect of thermo-magnetic treatment is detected.

  1. Boron-enhanced diffusion of boron from ultralow-energy boron implantation

    International Nuclear Information System (INIS)

    Agarwal, A.; Eaglesham, D.J.; Gossmann, H.J.; Pelaz, L.; Herner, S.B.; Jacobson, D.C.

    1998-01-01

    The authors have investigated the diffusion enhancement mechanism of BED (boron enhanced diffusion), wherein the boron diffusivity is enhanced three to four times over the equilibrium diffusivity at 1,050 C in the proximity of a silicon layer containing a high boron concentration. It is shown that BED is associated with the formation of a fine-grain polycrystalline silicon boride phase within an initially amorphous Si layer having a high B concentration. For 0.5 keV B + , the threshold implantation dose which leads to BED lies between 3 x 10 14 and of 1 x 10 15 /cm -2 . Formation of the shallowest possible junctions by 0.5 keV B + requires that the implant dose be kept lower than this threshold

  2. Microstrucural characterization of gas atomized Fe{sub 73.5}Si{sub 13.5}B{sub 9}Nb{sub 3}Cu{sub 1} and Fe{sub 97}Si{sub 3} alloys

    Energy Technology Data Exchange (ETDEWEB)

    Garcia-Escorial, A., E-mail: age@cenim.csic.es [CENIM-CSIC, Avda. Gregorio del Amo, 8, 28040 Madrid (Spain); Lieblich, M. [CENIM-CSIC, Avda. Gregorio del Amo, 8, 28040 Madrid (Spain); Lopez, M.; Marin, P. [Instituto de Magnetismo Aplicado, P.O. Box 155, 28230 Madrid (Spain)

    2011-06-15

    Research highlights: > Two FeSi-base alloys as precursors for small dimension soft magnets. > Small particles rapidly solidified by gas atomisation. > Increase effective magnetic anisotropy constant by alloying segregation. > Magnetic hardenning due to volume decrease. - Abstract: Powder particles of Fe{sub 73.5}Si{sub 13.5}B{sub 9}Nb{sub 3}Cu{sub 1} and Fe{sub 97}Si{sub 3} soft magnetic alloys have been prepared by gas atomization. The gas atomized powder was microstructurally characterized and the dependence of coercivity with the composition and powder particle size investigated. As-atomized powder particles of both compositions were constituted by a bcc {alpha}-Fe (Si) solid solution. The Fe{sub 73.5}Si{sub 13.5}B{sub 9}Nb{sub 3}Cu{sub 1} powder particles presented a grain microstructure with dendrite structure, which dendrite arms were enriched in Nb. The coercivity increased as the particle size decreased, with a minimum coercivity, of 5 Oe, measured in the Fe{sub 97}Si{sub 3} alloy in the range of 50-100 {mu}m powder particle size. The coercive fields were quite higher in the Fe{sub 73.5}Si{sub 13.5}B{sub 9}Nb{sub 3}Cu{sub 1} than in the Fe{sub 97}Si{sub 3} powder, due to the Nb addition, which produced a phase segregation that leads to a noticeable magnetic hardening.

  3. Nanocrystallization in amorphous Fe40Ni40(Si+B)19Mo1-2 ribbons

    International Nuclear Information System (INIS)

    Saiseng, S.; Winotai, P.; Nilpairuch, S.; Limsuwan, P.; Tang, I.M.

    2004-01-01

    Cut Fe 40 Ni 40 (Si+B) 19 Mo 1-2 ribbons were annealed for 2 h at various temperatures between 350 deg. C and 600 deg. C. XRD and Mossbauer effect spectroscopy (ME) measurements were then performed on all of the ribbons. The magnetic properties of several ribbons were measured using a vibrating sample magnetometer (VSM). A differential thermal analysis scan (over the range 20-800 deg. C) of the as-cast ribbon showed two phase transitions; the first at 454 deg. C and the second at 525 deg. C. Both the XRD and ME spectra of the as cast, the 350 deg. C and 400 deg. C annealed ribbons showed that they were amorphous. The ME spectra of the 450 deg. C, 475 deg. C and 500 deg. C annealed ribbons showed that these ribbons contained α-Fe, α-Fe(Si) and t-Fe 2 B nanocrystallites. For the ribbons annealed above 550 deg. C, crystallites of t-Fe 2 B, t-Fe 3 B, t-Fe 5 SiB 2 and FCC-FeNi appeared, with the α-Fe and α-Fe(Si) crystallites disappearing. The sextets of all of the Fe compounds appeared in the ME spectra of the 525 deg. C annealed ribbon. The VSM measurements supported the picture of a two-stage phase transitions; amorphous phase→a nanocrystalline phase (Fe-containing nanocrystallites in an amorphous matrix) at 454 deg. C and then a second transition, the nanocrystalline phase→a disordered alloy containing Fe-B and Fe-Ni crystallites at 525 deg. C

  4. About the mechanical stability of MnFe(P,Si,B) giant-magnetocaloric materials

    Energy Technology Data Exchange (ETDEWEB)

    Guillou, F., E-mail: f.guillou@tudelft.nl [FAME, Faculty of Applied Sciences, TU Delft, Mekelweg 15, 2629 JB Delft (Netherlands); Yibole, H.; Dijk, N.H. van [FAME, Faculty of Applied Sciences, TU Delft, Mekelweg 15, 2629 JB Delft (Netherlands); Zhang, L. [BASF Netherlands B.V., Strijkviertel 67, 3454 PK De Meern (Netherlands); Hardy, V. [CRISMAT, Ensicaen, UMR 6508 CNRS, 6 B" d Maréchal Juin, 14050 Caen Cedex (France); Brück, E. [FAME, Faculty of Applied Sciences, TU Delft, Mekelweg 15, 2629 JB Delft (Netherlands)

    2014-12-25

    Highlights: • Electrical resistivity and hardness show an evolution at T{sub C} with thermal cycling. • Degradation depends on the (c/a) lattice discontinuity at the transition. • Boron substituted materials present an improved mechanical stability. - Abstract: Due to its ability to control the latent heat and the hysteresis (thermal or magnetic) at the first-order transition (FOT) without deteriorating the saturation magnetisation, boron substitution in MnFe(P,Si) materials has recently been reported to be an ideal parameter to reach promising magnetocaloric performances: ΔS ≈ 10 Jkg{sup −1} K{sup −1} and cyclic ΔT of 2.6 K (and more) at a moderate magnetic field of ΔB = 1 T. Additionally, an interesting aspect for applications is the improvement of the mechanical stability in B doped materials compared to the pristine MnFe(P,Si) compounds. These improved mechanical properties were initially supported by naked-eye inspection and the observation of a constant ΔT during a few thousands of magnetic cycles. (Guillou et al., 2014) Here, the evolution upon cycling of MnFe(P,Si,B) materials is studied in a more quantitative and systematic manner. For that purpose transformation temperatures, electrical resistivity, micro-hardness and the microstructure are tracked as a function of the thermal cycling across the FOT for three prototypical compositions in the MnFe(P,Si,B) system. It turns out this set of data confirms the initial finding that B substitution has a positive effect on the mechanical stability. The origin of this improvement is discussed, in particular in respect to the lattice parameter discontinuities at the phase transition.

  5. Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Behzad, Somayeh, E-mail: somayeh.behzad@gmail.co [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Moradian, Rostam [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Nano Science and Technology Research Center, Razi University, Kermanshah (Iran, Islamic Republic of); Computational Physical Science Research Laboratory, Department of Nano Science, Institute for Studies in Theoretical Physics and Mathematics (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of); Chegel, Raad [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of)

    2010-12-01

    The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

  6. Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

    International Nuclear Information System (INIS)

    Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

    2010-01-01

    The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

  7. Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

    Science.gov (United States)

    Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

    2010-12-01

    The effects of boron doping on the structural and electronic properties of (6,0)@(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

  8. Effect of heat treatment on Fe-B-Si-Nb alloy powder prepared by mechanical alloying

    Directory of Open Access Journals (Sweden)

    Rodrigo Estevam Coelho

    2005-06-01

    Full Text Available The effect of heat treatment on crystallization behavior of Fe73.5B15Si10Nb1.5 alloy powder prepared by mechanical alloying was studied. The powder samples were prepared by mechanical alloying (MA and for different milling times (1, 5, 25, 70 and 100 hours. Crystalline powders of iron, boron, silicon and niobium were sealed with tungsten carbide balls in a cylindrical vial under nitrogen atmosphere. The ball-to-powder weight ratio was 20 to 1. A Fritsch Pulverizette 5 planetary ball mill was used for MA the powders at room temperature and at 250 rpm. To study the microstructural evolution, a small amount of powder was collected after different milling times and examined by X-ray diffraction, using CuKalpha radiation (lambda = 0.15418 nm. The crystallization behavior was studied by differential thermal analysis, from 25 up to 1000 °C at a heating rate of 25 °C min-1.

  9. Microscopic models of impurities in silicon

    International Nuclear Information System (INIS)

    Assali, L.V.C.

    1985-01-01

    The study of electronic structure of insulated and complex puntual impurities in silicon responsible by the appearing of deep energy levels in the forbiden band of semiconductor, is presented. The molecular cluster model with the treatment of surface orbitals by Watson sphere within the formalism of Xα multiple scattering method, was used. The electronic structures of three clusters representative of perfect silicon crystal, which were used for the impurity studies, are presented. The method was applied to analyse insulated impurities of substitutional and interstitial hydrogen (Si:H and Si:H i ), subtitutional and interstitial iron in neutral and positive charge states (Si:Fe 0 , + , Si:Fe 0 , + ) and substitutional gold in three charge states(Si,Au - , 0 , + ). The thetraedic interstitial defect of silicon (Si:Si i ) was also studied. The complex impurities: neighbour iron pair in the lattice (Si:Fe 2 ), substitutional gold-interstitial iron pair (Si:Au s Fe) and substitutional boron-interstitial hydrogen pair (Si:B s H i ), were analysed. (M.C.K.) [pt

  10. Microstructure and properties of multiphase sintered cermets Fe-Fe{sub 2}B; Mikrostruktura i wlasnosci spiekanych reakcyjnie cermetali Fe-Fe{sub 2}B

    Energy Technology Data Exchange (ETDEWEB)

    Nowacki, J. [Wydzial Inzynierii Materialowej, Politechnika Szczecinska, Szczecin (Poland); Klimek, L. [Instytut Inzynierii Materialowej i Technik Bezwiorowych, Politechnika Lodzka, Lodz (Poland)

    1998-12-31

    The process of multiphase sintering of iron in the vacuum has been analysed. As a result of the process iron-iron boride cermets have been produced. Fe-Fe{sub 2}B cermets were obtained as a result of sintering of the Fe and B pure elements in the vacuum. Attemps at sintering in the solid phase and with the participation of the liquid phase, the Fe-Fe{sub 2}B eutectic, have been made. Metallographic qualitative and quantitative studies, X-ray structural qualitative and qauantitative analysis allowed to determine the structure of Fe{sub 2}B cermets, as well as a description of the kinetics of quantitative changes in phase proportions in the course of sintering. It has been found that their structure varies widely depending on sintering parameters and the composition of the sinters. Measurements of the Fe-Fe{sub 2}B cermets hardness and measurements on wear during dry friction by the pin-on-disc method have shown distinct advantages of the cermets as a modern constructional materials. The hardness of Fe-Fe{sub 2}B cermets, depending on their chemical composition and sintering parameters, ranges widely from 150 to 1500 HV, and their resistance to wear is comparable to that of diffusively boronized steels. FeFe{sub 2}B cermets are a composite material in which iron boride, Fe{sub 2}B, with a hardness of about 1800 HV plays the role of the reinforcement,while iron-iron boride, Fe-Fe{sub 2}B, with a hardness of about 500 HV plays the role of matrix. The eutectic in the spaces between iron boride grains is composed of boron solid solution plates in iron with a hardness of arround 250 HV, and iron boride, Fe{sub 2}B, plates with a hardness of approximaly 1800 HV. The combination of such different materials, a hard reinforcement and a relatively plastic matrix produces favourable properties of the cermet thus produced high hardness (1500 HV) constant over whole cross section of the material, resistance of abrasive wear and acceptable ductility. The properties mentioned above

  11. Modelling structure and properties of amorphous silicon boron nitride ceramics

    Directory of Open Access Journals (Sweden)

    Johann Christian Schön

    2011-06-01

    Full Text Available Silicon boron nitride is the parent compound of a new class of high-temperature stable amorphous ceramics constituted of silicon, boron, nitrogen, and carbon, featuring a set of properties that is without precedent, and represents a prototypical random network based on chemical bonds of predominantly covalent character. In contrast to many other amorphous materials of technological interest, a-Si3B3N7 is not produced via glass formation, i.e. by quenching from a melt, the reason being that the binary components, BN and Si3N4, melt incongruently under standard conditions. Neither has it been possible to employ sintering of μm-size powders consisting of binary nitrides BN and Si3N4. Instead, one employs the so-called sol-gel route starting from single component precursors such as TADB ((SiCl3NH(BCl2. In order to determine the atomic structure of this material, it has proven necessary to simulate the actual synthesis route.Many of the exciting properties of these ceramics are closely connected to the details of their amorphous structure. To clarify this structure, it is necessary to employ not only experimental probes on many length scales (X-ray, neutron- and electron scattering; complex NMR experiments; IR- and Raman scattering, but also theoretical approaches. These address the actual synthesis route to a-Si3B3N7, the structural properties, the elastic and vibrational properties, aging and coarsening behaviour, thermal conductivity and the metastable phase diagram both for a-Si3B3N7 and possible silicon boron nitride phases with compositions different from Si3N4: BN = 1 : 3. Here, we present a short comprehensive overview over the insights gained using molecular dynamics and Monte Carlo simulations to explore the energy landscape of a-Si3B3N7, model the actual synthesis route and compute static and transport properties of a-Si3BN7.

  12. Moessbauer study of isothermally annealed amorphous Fe-Nb-Cu-Si-B alloys

    International Nuclear Information System (INIS)

    Sitek, J.; Toth, I.; Miglierini, M.

    1993-01-01

    Amorphous ribbons of Fe 73.5 Nb 3 Cu 1 Si 13.5 B 9 have been annealed above the crystallization temperature. Annealed samples consisted of crystalline and amorphous phases in a wide temperature range. Two samples of different thicknesses of 33 μm and 27 μm were isothermally annealed at a temperature of 545 C from 0.5 to 5 h in a vacuum furnace. The amount of crystalline phase increases rapidly in the ticker sample. The crystalline part of the Moessbauer spectrum consists of four sharp sextets which can be assigned to a DO 3 -structure FeSi alloy. After 700 C annealing the amorphous phase was not observed and the crystalline phase consisted of the DO 3 -structure FeSi alloy, paramagnetic FeNbB and presumably Fe 23 B 6 and Fe 3 SiB 2 . (orig.)

  13. Moessbauer spectroscopy studies of spin reorientations in amorphous and crystalline (Co0.2Fe0.8)72.5Si12.5B15 glass coated micro-wires

    International Nuclear Information System (INIS)

    Nowik, I.; Felner, I.; Garcia-Miquel, H.

    2007-01-01

    Thermo-gravimetric, differential scanning calorimetry and comprehensive 57 Fe Moessbauer spectroscopy studies of amorphous and crystalline ferromagnetic glass coated (Co 0.2 Fe 0.8 ) 72.5 Si 12.5 B 15 micro-wires have been recorded. The Curie temperature of the amorphous phase is T C (amorp) ∼730 K. The analysis of the Moessbauer spectra reveals that below 623 K the easy axis of the magnetization is axial-along the wires, and that a tangential or/and radial orientation occurs at higher temperatures. At 770 K, in the first 4 hours the Moessbauer spectrum exhibits a pure paramagnetic doublet. Crystallization and decomposition to predominantly α-Fe(Si) and Fe 2 B occurs either by raising the temperature above 835 K or isothermally in time at lower temperatures. Annealing for a day at 770 K, leads to crystallization. In the crystalline material the magnetic moments have a complete random orientation. After cooling back to ambient temperature, both α-Fe(Si) and Fe 2 B in the glass coated wire show pure axial magnetic orientation like in the original amorphous state. The observed spin reorientations are associated with changes in the stress induced by the glass coating

  14. In situ observation of self-propagating high temperature syntheses of Ta5Si3, Ti5Si3 and TiB2 by proton and X-ray radiography

    Science.gov (United States)

    Bernert, T.; Winkler, B.; Haussühl, E.; Trouw, F.; Vogel, S. C.; Hurd, A. J.; Smilowitz, L.; Henson, B. F.; Merrill, F. E.; Morris, C. L.; Mariam, F. G.; Saunders, A.; Juarez-Arellano, E. A.

    2013-08-01

    Self-propagating high temperature reactions of tantalum and titanium with silicon and titanium with boron were studied using proton and X-ray radiography, small-angle neutron scattering, neutron time-of-flight, X-ray and neutron diffraction, dilatometry and video recording. We show that radiography allows the observation of the propagation of the flame front in all investigated systems and the determination of the widths of the burning zones. X-ray and neutron diffraction showed that the reaction products consisted of ≈90 wt% of the main phase and one or two secondary phases. For the reaction 5Ti + 3Si → Ti5Si3 flame front velocities of 7.1(3)-34.2(4) mm/s were determined depending on the concentration of a retardant added to the starting material, the geometry and the green density of the samples. The flame front width was determined to be 1.17(4)-1.82(8) mm and depends exponentially on the flame front velocity. Similarly, for the reaction Ti + 2B → TiB2 flame front velocities of 15(2)-26.6(4) mm/s were determined, while for a 5Ta + 3Si → Ta5Si3 reaction the flame front velocity was 7.05(4) mm/s. The micro structure of the product phase Ta5Si3 shows no texture. From SANS measurements the dependence of the specific surface of the product phase on the particle sizes of the starting materials was studied.

  15. Cluster-based bulk metallic glass formation in Fe-Si-B-Nb alloy systems

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, C L; Wang, Q; Li, F W; Li, Y H; Wang, Y M; Dong, C [State Key Laboratory of Materials Modification, Dalian University of Technology (DUT), Dalian 116024 (China); Zhang, W; Inoue, A, E-mail: dong@dlut.edu.c [Institute for Materials Research (IMR), Tohoku University, Katahira 2-1-1, Aoba-Ku, Sendai 980-8577 (Japan)

    2009-01-01

    Bulk metallic glass formations have been explored in Fe-B-Si-Nb alloy system using the so-called atomic cluster line approach in combination with minor alloying guideline. The atomic cluster line refers to a straight line linking binary cluster to the third element in a ternary system. The basic ternary compositions in Fe-B-Si system are determined by the inetersection points of two cluster lines, namely Fe-B cluster to Si and Fe-Si cluster to B, and then further alloyed with 3-5 at. % Nb for enhancing glass forming abilities. BMG rods with a diameter of 3 mm are formed under the case of minor Nb alloying the basic intersecting compositions of Fe{sub 8}B{sub 3}-Si with Fe{sub 12}Si-B and Fe{sub 8}B{sub 2}-Si with Fe{sub 9}Si-B. The BMGs also exhibit high Vickers hardness (H{sub v}) of 1130-1164 and high Young's modulous (E) of 170-180 GPa

  16. Boron solubility in Fe-Cr-B cast irons

    International Nuclear Information System (INIS)

    Guo Changqing; Kelly, P.M.

    2003-01-01

    Boron solubility in the as-cast and solution treated martensite of Fe-Cr-B cast irons, containing approximately 1.35 wt.% of boron, 12 wt.% of chromium, as well as other alloying elements, has been investigated using conventional microanalysis. The significant microstructural variations after tempering at 750 deg. C for 0.5-4 h, compared with the original as-cast and solution treated microstructures, indicated that the matrix consisted of boron and carbon supersaturated solid solutions. The boron solubility detected by electron microprobe was between 0.185-0.515 wt.% for the as-cast martensite and 0.015-0.0589 wt.% for the solution treated martensite, much higher than the accepted value of 0.005 wt.% in pure iron. These remarkable increases are thought to be associated with some metallic alloying element addition, such as chromium, vanadium and molybdenum, which have atomic diameters larger than iron, and expand the iron lattice to sufficiently allow boron atoms to occupy the interstitial sites in iron lattice

  17. Moessbauer study of isothermally annealed amorphous Fe-Nb-Cu-Si-B alloys

    Energy Technology Data Exchange (ETDEWEB)

    Sitek, J. (Dept. of Nuclear Physics and Technology, Slovak Technical Univ., Bratislava (Slovakia)); Toth, I. (Dept. of Nuclear Physics and Technology, Slovak Technical Univ., Bratislava (Slovakia)); Miglierini, M. (Dept. of Nuclear Physics and Technology, Slovak Technical Univ., Bratislava (Slovakia))

    1993-11-01

    Amorphous ribbons of Fe[sub 73.5]Nb[sub 3]Cu[sub 1]Si[sub 13.5]B[sub 9] have been annealed above the crystallization temperature. Annealed samples consisted of crystalline and amorphous phases in a wide temperature range. Two samples of different thicknesses of 33 [mu]m and 27 [mu]m were isothermally annealed at a temperature of 545 C from 0.5 to 5 h in a vacuum furnace. The amount of crystalline phase increases rapidly in the ticker sample. The crystalline part of the Moessbauer spectrum consists of four sharp sextets which can be assigned to a DO[sub 3]-structure FeSi alloy. After 700 C annealing the amorphous phase was not observed and the crystalline phase consisted of the DO[sub 3]-structure FeSi alloy, paramagnetic FeNbB and presumably Fe[sub 23]B[sub 6] and Fe[sub 3]SiB[sub 2]. (orig.)

  18. First principle investigations on Boron doped Fe2VAl Heusler alloy

    International Nuclear Information System (INIS)

    Venkatesh, Ch.; Srivastava, S.K.; Rao, V.V.

    2014-01-01

    The role of atomic size of sp-element is investigated through theoretical calculations and basic experiments to understand the physical properties of Boron doped Fe 2 VAl alloy. The results of ab-initio calculations on ordered L2 1 structure of Fe 2 VAl 1-x B x (x=0, 0.5, 1) alloys have been compared to understand the role of sp-element size on the hybridization among their respective valance states. Interestingly, semi-metallic and paramagnetic like ground states were found in the Boron doped alloys in similar to Fe 2 VAl, eliminating the role of size of the doppent sp-atom. These calculations result in hybridization where the covalent distribution of valance states among the atoms is responsible to produce a finite pseudo-gap at the Fermi level. The observed features could be explained on the basis of covalent theory of magnetism in which an amount of spectral weight transfer occurs in the DOS spectrum among the same spin orbitals, leading to symmetric distribution of bonding and anti-bonding states. However, the obtained experimental findings on Boron doped alloys are in contrast with these calculations, indicating that experimentally the alloy formation into an ideal L2 1 lattice does not happen while doping with Boron. Further, the micro structural analysis shows Boron segregation across the grain boundaries that may form magnetic inhomogeneities in the lattice of Boron doped Fe 2 VAl alloys which preferably cause these experimental anomalies

  19. Effects of boron addition on the formation of MoSi2 by combustion synthesis mode

    International Nuclear Information System (INIS)

    Feng Peizhong; Wu Jie; Islam, S.H.; Liu Weisheng; Niu Jinan; Wang Xiaohong; Qiang Yinghuai

    2010-01-01

    The combustion synthesis behavior of Mo-Si-B powder was investigated. Test specimens with nominal compositions including MoSi 2 , Mo(Si 0.975 B 0.025 ) 2 , Mo(Si 0.95 B 0.05 ) 2 , Mo(Si 0.925 B 0.075 ) 2 and Mo(Si 0.9 B 0.1 ) 2 were employed. The combustion mode, propagation velocity of combustion wave, combustion temperature and combustion product structure were studied. The results showed that the combustion wave propagated along a spiral trajectory till reaching the bottom of the compacts. The combustion temperature was increased by the addition of boron, to as high as 1922 K in the case of the Mo(Si 0.95 B 0.05 ) 2 sample. However, the flame-front propagation velocity decreased as a result of the addition of boron. The X-ray diffraction results showed that the combustion products of the Mo(Si 0.975 B 0.025 ) 2 and Mo(Si 0.9 B 0.1 ) 2 samples were composed of MoSi 2 with minor MoB. Those of the Mo(Si 0.95 B 0.05 ) 2 and Mo(Si 0.925 B 0.075 ) 2 samples were composed of MoSi 2 with minor MoB and MoB 2 . And traces of Mo 2 B 5 were identified in the Mo(Si 0.95 B 0.05 ) 2 sample.

  20. Characterisation of NdFeB thin films prepared on (100)Si substrates with SiO2 barrier layers

    International Nuclear Information System (INIS)

    Sood, D.K.; Muralidhar, G.K.

    1998-01-01

    This work presents a systematic study of the deposition and characterization of NdFeB films on substrates of Si(100) and of SiO2 layer thermally grown on Si(100) held at RT, 360 deg C or 440 deg C. The post-deposition annealing is performed at 600 or 800 deg C in vacuum. The films are characterised using the analytical techniques of RBS, SIMS, XRD, OM and SEM. Results indicate that SiO2 is, in deed, an excellent diffusion barrier layer till 600 deg C but becomes relatively less effective at 800 deg C. Without this barrier layer, interdiffusion at the Si-NdFeB film interface leads to formation of iron silicides, α-Fe and B exclusion from the diffusion zone, in competition with the formation of the magnetic NdFeB phase. (authors)

  1. Microstructure and properties of multiphase sintered cermets Fe-Fe2B

    International Nuclear Information System (INIS)

    Nowacki, J.; Klimek, L.

    1998-01-01

    The process of multiphase sintering of iron in the vacuum has been analysed. As a result of the process iron-iron boride cermets have been produced. Fe-Fe 2 B cermets were obtained as a result of sintering of the Fe and B pure elements in the vacuum. Attemps at sintering in the solid phase and with the participation of the liquid phase, the Fe-Fe 2 B eutectic, have been made. Metallographic qualitative and quantitative studies, X-ray structural qualitative and qauantitative analysis allowed to determine the structure of Fe 2 B cermets, as well as a description of the kinetics of quantitative changes in phase proportions in the course of sintering. It has been found that their structure varies widely depending on sintering parameters and the composition of the sinters. Measurements of the Fe-Fe 2 B cermets hardness and measurements on wear during dry friction by the pin-on-disc method have shown distinct advantages of the cermets as a modern constructional materials. The hardness of Fe-Fe 2 B cermets, depending on their chemical composition and sintering parameters, ranges widely from 150 to 1500 HV, and their resistance to wear is comparable to that of diffusively boronized steels. FeFe 2 B cermets are a composite material in which iron boride, Fe 2 B, with a hardness of about 1800 HV plays the role of the reinforcement,while iron-iron boride, Fe-Fe 2 B, with a hardness of about 500 HV plays the role of matrix. The eutectic in the spaces between iron boride grains is composed of boron solid solution plates in iron with a hardness of arround 250 HV, and iron boride, Fe 2 B, plates with a hardness of approximaly 1800 HV. The combination of such different materials, a hard reinforcement and a relatively plastic matrix produces favourable properties of the cermet thus produced high hardness (1500 HV) constant over whole cross section of the material, resistance of abrasive wear and acceptable ductility. The properties mentioned above, resulting from the cermet

  2. FTIR and electrical characterization of a-Si:H layers deposited by PECVD at different boron ratios

    Energy Technology Data Exchange (ETDEWEB)

    Orduna-Diaz, A., E-mail: abdu@susu.inaoep.mx [Instituto Nacional de Astrofisica, Optica y Electronica, Luis Enrique Erro No. 1, Tonantzintla, Puebla 72840 (Mexico); Trevino-Palacios, C.G. [Instituto Nacional de Astrofisica, Optica y Electronica, Luis Enrique Erro No. 1, Tonantzintla, Puebla 72840 (Mexico); Rojas-Lopez, M.; Delgado-Macuil, R.; Gayou, V.L. [Centro de Investigacion en Biotecnologia Aplicada (CIBA), IPN, Tlaxcala, Tlax. 72197 (Mexico); Torres-Jacome, A. [Instituto Nacional de Astrofisica, Optica y Electronica, Luis Enrique Erro No. 1, Tonantzintla, Puebla 72840 (Mexico)

    2010-10-25

    Hydrogenated amorphous silicon (a-Si:H) has found applications in flat panel displays, photovoltaic solar cell and recently has been employed in boron doped microbolometer array. We have performed electrical and structural characterizations of a-Si:H layers prepared by plasma enhanced chemical vapor deposition (PECVD) method at 540 K on glass substrates at different diborane (B{sub 2}H{sub 6}) flow ratios (500, 250, 150 and 50 sccm). Fourier transform infrared spectroscopy (FTIR) measurements obtained by specular reflectance sampling mode, show Si-Si, B-O, Si-H, and Si-O vibrational modes (611, 1300, 2100 and 1100 cm{sup -1} respectively) with different strengths which are associated to hydrogen and boron content. The current-voltage curves show that at 250 sccm flow of boron the material shows the lowest resistivity, but for the 150 sccm boron flow it is obtained the highest temperature coefficient of resistance (TCR).

  3. Structure and magnetism of the Sm{sub 7.5}Y{sub 2.5}Fe{sub 90−x}Si{sub x} (x=0.0, 2.5, 5.0, 7.5 and 10) alloys

    Energy Technology Data Exchange (ETDEWEB)

    Yang, W.Y.; Zhao, H.; Lai, Y.F.; Du, H.L.; Liu, S.Q.; Wang, C.S.; Han, J.Z.; Yang, Y.C. [State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Yu, X.; Qi, Z.Q. [GanZhou Fortune Electronic Co. Ltd., Jiangxi (China); Yang, J.B. [State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

    2017-03-15

    Sm{sub 7.5}Y{sub 2.5}Fe{sub 90−x}Si{sub x} (x=0.0, 2.5, 5.0, 7.5 and 10) alloys have been prepared by arc melting method and equilibrium disordered Th{sub 2}Zn{sub 17}-type phases, (Sm,Y){sub 2−y}(Fe,Si){sub 17+2y}, with relative lower rare-earth content than the ordered Th{sub 2}Zn{sub 17}-type phase, have been obtained. Compared to the ordered Th{sub 2}Zn{sub 17}-type structure, the X-ray diffraction (XRD) intensity of the superstructure lines of the (Sm,Y){sub 2−y}(Fe,Si){sub 17+2y} decreases with the increase of the Si content and becomes zero for x=10. According to the refinement with the disordered Th{sub 2}Zn{sub 17}-type structure, the occupation rates of the R atoms at (3a) and (6c) sites tend to reach the same value with the increase of the Si content, and the lattice parameter a decreases while the lattice parameter c increases, leading to an increase of c/a. It was found that the atomic ratio of Fe(Si)/Sm(Y) in the disordered Th{sub 2}Zn{sub 17}-type structure increases with the increase of Si content and reaches a maximum value of 9.07 with x=10. The XRD diagrams of the magnetic aligned samples indicate that the easy magnetization direction (EMD) of the (Sm,Y){sub 2−y}(Fe,Si){sub 17+2y} is in the a-b plane, and the change of the EMD in a-b plane has also been observed due to the Si preferred site occupation. The remanence ratios along the easy direction are higher than that along hard direction; however, all the remanence ratios are less than 0.5. The magnetocrystalline anisotropy constant K increases first and then decreases with increasing the Si content. The Curie temperature of Sm{sub 7.5}Y{sub 2.5}Fe{sub 90−x}Si{sub x} alloys increases by about 65 K per Si. The saturation magnetization increases first and then decreases with a maximum of 135.5 emu/g observed for x=2.5 at room temperature. - Highlights: • Equilibrium disordered Th{sub 2}Zn{sub 17}-type phases (Sm,Y){sub 2-y}(Fe,Si){sub 17+2y} have been obtained. • The atomic ratio of

  4. Stress impedance effects in flexible amorphous FeCoSiB magnetoelastic films

    International Nuclear Information System (INIS)

    Zhang Wanli; Peng Bin; Su Ding; Tang Rujun; Jiang Hongchuan

    2008-01-01

    Amorphous FeCoSiB films were deposited on the flexible polyimide substrates (Kapton type (VN)) by DC magnetron sputtering. Stress impedance (SI) effects of the flexible amorphous FeCoSiB magnetoelastic films were investigated in details. The results show that a large stress impedance effect can be observed in the flexible amorphous FeCoSiB magnetoelastic films. And the results also show a bias magnetic field plays an important role in the stress impedance of FeCoSiB films. Applied a bias magnetic field during depositing can induce obvious in-plane anisotropy in the FeCoSiB films, and a larger SI effect can be obtained with a stronger anisotropy in FeCoSiB films. Argon pressure has a significant effect on the SI effect of the FeCoSiB films. The SI of the FeCoSiB films reaches a maximum of 7.6% at argon pressure of 1.5 Pa, which can be explained by the change of residual stress in FeCoSiB films

  5. Fabrication of an Fe80.5Si7.5B6Nb5Cu Amorphous-Nanocrystalline Powder Core with Outstanding Soft Magnetic Properties

    Science.gov (United States)

    Zhang, Zongyang; Liu, Xiansong; Feng, Shuangjiu; Rehman, Khalid Mehmood Ur

    2018-03-01

    In this study, the melt spinning method was used to develop Fe80.5Si7.5B6Nb5Cu amorphous ribbons in the first step. Then, the Fe80.5Si7.5B6Nb5Cu amorphous-nanocrystalline core with a compact microstructure was obtained by multiple processes. The main properties of the magnetic powder core, such as micromorphology, thermal behavior, permeability, power loss and quality factor, have been analyzed. The obtained results show that an Fe80.5Si7.5B6Nb5Cu amorphous-nanocrystalline duplex core has high permeability (54.8-57), is relatively stable at different frequencies and magnetic fields, and the maximum power loss is only 313 W/kg; furthermore, it has a good quality factor.

  6. Si-FeSi2/C nanocomposite anode materials produced by two-stage high-energy mechanical milling

    Science.gov (United States)

    Yang, Yun Mo; Loka, Chadrasekhar; Kim, Dong Phil; Joo, Sin Yong; Moon, Sung Whan; Choi, Yi Sik; Park, Jung Han; Lee, Kee-Sun

    2017-05-01

    High capacity retention Silicon-based nanocomposite anode materials have been extensively explored for use in lithium-ion rechargeable batteries. Here we report the preparation of Si-FeSi2/C nanocomposite through scalable a two-stage high-energy mechanical milling process, in which nano-scale Si-FeSi2 powders are besieged by the carbon (graphite/amorphous phase) layer; and investigation of their structure, morphology and electrochemical performance. Raman analysis revealed that the carbon layer structure comprised of graphitic and amorphous phase rather than a single amorphous phase. Anodes fabricated with the Si-FeSi2/C showed excellent electrochemical behavior such as a first discharge capacity of 1082 mAh g-1 and a high capacity retention until the 30th cycle. A remarkable coulombic efficiency of 99.5% was achieved within a few cycles. Differential capacity plots of the Si-FeSi2/C anodes revealed a stable lithium reaction with Si for lithiation/delithiation. The enhanced electrochemical properties of the Si-FeSi2/C nanocomposite are mainly attributed to the nano-size Si and stable solid electrolyte interface formation and highly conductive path driven by the carbon layer.

  7. Influence of the chemical composition of rapidly quenched amorphous alloys (Ni, Fe, Cr)-B-Si on its crystallization process

    Science.gov (United States)

    Elmanov, G.; Dzhumaev, P.; Ivanitskaya, E.; Skrytnyi, V.; Ruslanov, A.

    2016-04-01

    This paper presents results of research of the structure and phase transformations during the multistage crystallization of the metallic glasses with the compositions Ni71,5Cr6,8Fe2,7B11,9Si7,1 and Ni63,4Cr7,4Fe4,3Mn0,8B15,6Si8,5 labeled as AWS BNi-2 according to American Welding Society. Differential scanning calorimetry (DSC), X-ray diffraction analysis (XRD), scanning electron microscopy (SEM) and energy-dispersive X-ray microanalysis (EDX) were used as experimental research methods. The influence of the alloys chemical composition (boron, manganese and iron) on the temperatures and the exothermic heat effects of phase transformations, as well as on the phase composition of alloys at three stages of crystallization was analyzed. We present a thermodynamic explanation of the observed heat effects. It has been shown that manganese has the main influence on the phase transformations temperatures and heat effects in these two alloys. It is also assumed that at the final crystallization stage simultaneously with the formation of phases Ni3B and β1-Ni3Si should occur the nucleation of borides of CrB type with high Cr and low Si content.

  8. Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure

    KAUST Repository

    Zhang, Y.

    2016-07-20

    Current-perpendicular-to-plane electronic transport properties and magnetoresistance of amorphous Co40Fe40B20/SiO2/Si heterostructures are investigated systematically. A backward diode-like rectifying behavior was observed due to the formation of a Schottky barrier between Co40Fe40B20 and Si. The junction resistance shows a metal-insulator transition with decreasing temperature in both the forward and reverse ranges. A large positive magnetoresistance (MR) of ∼2300% appears at 200 K. The positive MR can be attributed to the magnetic-field-controlled impact ionization process of carriers. MR shows a temperature-peak-type character under a constant bias current, which is related to the spin-dependent barrier in the Si near the interface. © CopyrightEPLA, 2016.

  9. Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure

    KAUST Repository

    Zhang, Y.; Mi, W. B.; Zhang, Xixiang

    2016-01-01

    Current-perpendicular-to-plane electronic transport properties and magnetoresistance of amorphous Co40Fe40B20/SiO2/Si heterostructures are investigated systematically. A backward diode-like rectifying behavior was observed due to the formation of a Schottky barrier between Co40Fe40B20 and Si. The junction resistance shows a metal-insulator transition with decreasing temperature in both the forward and reverse ranges. A large positive magnetoresistance (MR) of ∼2300% appears at 200 K. The positive MR can be attributed to the magnetic-field-controlled impact ionization process of carriers. MR shows a temperature-peak-type character under a constant bias current, which is related to the spin-dependent barrier in the Si near the interface. © CopyrightEPLA, 2016.

  10. Ultra-soft magnetic Co-Fe-B-Si-Nb amorphous alloys for high frequency power applications

    Science.gov (United States)

    Ackland, Karl; Masood, Ansar; Kulkarni, Santosh; Stamenov, Plamen

    2018-05-01

    With the continuous shrinkage of the footprint of inductors and transformers in modern power supplies, higher flux, while still low-loss metallic replacements of traditional ferrite materials are becoming an intriguing alternative. One candidate replacement strategy is based on amorphous CoFeBSi soft-magnetic alloys, in their metallic glass form. Here the structural and magnetic properties of two different families of CoFeBSi-based soft magnetic alloys, prepared by arc-melting and subsequent melt spinning (rapid quenching) are presented, targeting potential applications at effective frequencies of 100 kHz and beyond. The nominal alloy compositions are Co67Fe4B11Si16Mo2 representing commercial Vitrovac and Co72-xFexB28-y (where B includes non-magnetic elements such as Boron, Silicon etc. x varies between 4 and 5 % and y is varied from 0 to 2 %) denoted Alloy #1 and prepared as a possible higher performance alternative, i.e. lower power loss and lower coercivity, to commercial Vitrovac. Room temperature magnetization measurements of the arc-melted alloys reveal that compared to Vitrovac, Alloy #1 already presents a ten-fold decrease in coercivity, with Hc ˜ 1.4 Am-1 and highest figure of merit of (Ms/Hc > 96). Upon melt-spinning the alloys into thin (< 30 μm) ribbons, the alloys are essentially amorphous when analyzed by XRD. Magnetization measurements of the melt-spun ribbons demonstrate that Alloy #1 possesses a coercivity of just 2 Am-1, which represents a significant improvement compared to melt-spun ribbons of Vitrovac (17 Am-1). A set of prototype transformers of approximately 10 turns of Alloy #1 ribbon exhibits systematically Hc < 10 Am-1 at 100 kHz, without a noticeable decrease in coupled flux and saturation.

  11. Behaviour of Fe4O5-Mg2Fe2O5 solid solutions and their relation to coexisting Mg-Fe silicates and oxide phases

    Science.gov (United States)

    Uenver-Thiele, Laura; Woodland, Alan B.; Miyajima, Nobuyoshi; Ballaran, Tiziana Boffa; Frost, Daniel J.

    2018-03-01

    Experiments at high pressures and temperatures were carried out (1) to investigate the crystal-chemical behaviour of Fe4O5-Mg2Fe2O5 solid solutions and (2) to explore the phase relations involving (Mg,Fe)2Fe2O5 (denoted as O5-phase) and Mg-Fe silicates. Multi-anvil experiments were performed at 11-20 GPa and 1100-1600 °C using different starting compositions including two that were Si-bearing. In Si-free experiments the O5-phase coexists with Fe2O3, hp-(Mg,Fe)Fe2O4, (Mg,Fe)3Fe4O9 or an unquenchable phase of different stoichiometry. Si-bearing experiments yielded phase assemblages consisting of the O5-phase together with olivine, wadsleyite or ringwoodite, majoritic garnet or Fe3+-bearing phase B. However, (Mg,Fe)2Fe2O5 does not incorporate Si. Electron microprobe analyses revealed that phase B incorporates significant amounts of Fe2+ and Fe3+ (at least 1.0 cations Fe per formula unit). Fe-L2,3-edge energy-loss near-edge structure spectra confirm the presence of ferric iron [Fe3+/Fetot = 0.41(4)] and indicate substitution according to the following charge-balanced exchange: [4]Si4+ + [6]Mg2+ = 2Fe3+. The ability to accommodate Fe2+ and Fe3+ makes this potential "water-storing" mineral interesting since such substitutions should enlarge its stability field. The thermodynamic properties of Mg2Fe2O5 have been refined, yielding H°1bar,298 = - 1981.5 kJ mol- 1. Solid solution is complete across the Fe4O5-Mg2Fe2O5 binary. Molar volume decreases essentially linearly with increasing Mg content, consistent with ideal mixing behaviour. The partitioning of Mg and Fe2+ with silicates indicates that (Mg,Fe)2Fe2O5 has a strong preference for Fe2+. Modelling of partitioning with olivine is consistent with the O5-phase exhibiting ideal mixing behaviour. Mg-Fe2+ partitioning between (Mg,Fe)2Fe2O5 and ringwoodite or wadsleyite is influenced by the presence of Fe3+ and OH incorporation in the silicate phases.

  12. Report on achievements in fiscal 1998. Development of silicon manufacturing process to rationalize energy usage (Development of mass production technology for solar-grade silicon); 1998 nendo energy shiyo gorika silicon seizo process kaihatsu seika hokokusho. Taiyo denchiyo silicon ryosanka seizo gijutsu no kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    In the proliferation stage of solar cells, a technology is required to manufacture low-cost SOG-Si that can handle small quantity production. Development is being made on a manufacturing technology using high purity metallic silicon (99.5%) as the raw material. Considering that the subject impurities are P, B and metallic impurities (Fe, Ti and Al), a manufacturing method consisting of the following processes is being developed: metallic silicon/phosphorus removal, solidification and rough refining/boron removal, solidification and fine refining. Discussions are being advanced on phosphorus removal by using a large electron beam fusion equipment, and at the same time, the discussions are supported by fabricating and installing a large equipment intended of removing boron and the metallic impurities. Boron is removed by oxidizing it with steam. Therefore, the basic mechanism of the equipment is to spray argon plasma added with steam onto the molten silicon surface. In boron removal, diffusion of boron onto the reaction interface in the primary reaction determines the rate. A boron removal rate for B/10 to 0.1 ppm of 45 kg/h as maximum was achieved. The derived silicon has met the requirement. (NEDO)

  13. Moessbauer-spectroscopic study of structure and magnetism of the exchange-coupled layer systems Fe/FeSn{sub 2}, and Fe/FeSi/Si and the ion-implanted diluted magnetic semiconductor SiC(Fe); Moessbauerspektroskopische Untersuchung von Struktur und Magnetismus der austauschgekoppelten Schichtsysteme Fe/FeSn{sub 2} und Fe/FeSi/Si und des ionenimplantierten verduennten magnetischen Halbleiters SiC(Fe)

    Energy Technology Data Exchange (ETDEWEB)

    Stromberg, Frank

    2009-07-07

    In line with this work the structural and magnetic properties of the exchange coupled layered systems Fe/FeSn{sub 2} and Fe/FeSi/Si and of the Fe ion implanted diluted magnetic semiconductor (DMS) SiC(Fe) were investigated. The main measuring method was the isotope selective {sup 57}Fe conversion electron Moessbauer spectroscopy (CEMS), mostly in connection with the {sup 57}Fe tracer layer technique, in a temperature range from 4.2 K to 340 K. Further measurement techniques were X-ray diffraction (XRD), electron diffraction (LEED, RHEED), SQUID magnetometry and FMR (Ferromagnetic Resonance). In the first part of this work the properties of thin AF FeSn{sub 2}(001) films and of the exchange-bias system Fe/FeSn{sub 2}(001) on InSb(001) were investigated. With the application of {sup 57}Fe-tracer layers and CEMS both the Fe-spin structure and the temperature dependence of the magnetic hyperfine field (B{sub hf}) of FeSn{sub 2} could be examined. The evaporation of Fe films on the FeSn{sub 2} films produced in the latter ones a high perpendicular spin component at the Fe/FeSn{sub 2} interface. In some distance from the interface the Fe spins rotate back into the sample plane. Furthermore {sup 57}Fe-CEMS provided a correlation between the absolute value of the exchange field vertical stroke He vertical stroke and the amount of magnetic defects within the FeSn{sub 2}. Temperature dependent CEMS-measurements yielded informations about the spin dynamics within the AF. The transition temperatures T{sub B}{sup *}, which were interpreted as superparamagnetic blocking temperatures, obtain higher values compared to the temperatures T{sub B} of the exchange-bias effect, obtained with magnetometry measurements. The second part of this work deals with the indirect exchange coupling within Fe/FeSi/Si/FeSi/Fe multilayers and FeSi diffusion barriers. The goal was to achieve Fe free Si interlayers. The CEMS results show that starting from a thickness of t{sub FeSi}=10-12 A of the

  14. UV Light-Driven Photodegradation of Methylene Blue by Using Mn0.5Zn0.5Fe2O4/SiO2 Nanocomposites

    Science.gov (United States)

    Indrayana, I. P. T.; Julian, T.; Suharyadi, E.

    2018-04-01

    The photodegradation activity of nanocomposites for 20 ppm methylene blue solution has been investigated in this work. Nanocomposites Mn0.5Zn0.5Fe2O4/SiO2 have been synthesized using coprecipitation method. The X-ray diffraction (XRD) pattern confirmed the formation of three phases in sample Mn0.5Zn0.5Fe2O4/SiO2 i.e., Mn0.5Zn0.5Fe2O4, Zn(OH)2, and SiO2. The appearance of SiO2 phase showed that the encapsulation process has been carried out. The calculated particles size of Mn0.5Zn0.5Fe2O4/SiO2 is greater than Mn0.5Zn0.5Fe2O4. Bonding analysis via vibrational spectra for Mn0.5Zn0.5Fe2O4/SiO2 confirmed the formation of bonds Me-O-Si stretching (2854.65 cm-1) and Si-O-Si asymmetric stretching (1026.13 cm-1). The optical gap energy of Mn0.5Zn0.5Fe2O4/SiO2 was smaller (2.70 eV) than Mn0.5Zn0.5Fe2O4 (3.04 eV) due to smaller lattice dislocation and microstrain that affect their electronic structure. The Mn0.5Zn0.5Fe2O4/SiO2 showed high photodegradation ability due to smaller optical gap energy and the appearance of SiO2 ligand that can easily attract dye molecules. The Mn0.5Zn0.5Fe2O4/SiO2 also showed high degradation activity even without UV light radiation. The result showed that photodegradation reaction doesn’t follow pseudo-first order kinetics.

  15. Superconductivity in heavily boron-doped silicon carbide

    Directory of Open Access Journals (Sweden)

    Markus Kriener, Takahiro Muranaka, Junya Kato, Zhi-An Ren, Jun Akimitsu and Yoshiteru Maeno

    2008-01-01

    Full Text Available The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped silicon carbide. The sample used for that study consisted of cubic and hexagonal SiC phase fractions and hence this led to the question which of them participated in the superconductivity. Here we studied a hexagonal SiC sample, free from cubic SiC phase by means of x-ray diffraction, resistivity, and ac susceptibility.

  16. Fabrication of NdFeB microstructures using a silicon molding technique for NdFeB/Ta multilayered films and NdFeB magnetic powder

    International Nuclear Information System (INIS)

    Jiang Yonggang; Fujita, Takayuki; Uehara, Minoru; Iga, Yuki; Hashimoto, Taichi; Hao, Xiuchun; Higuchi, Kohei; Maenaka, Kazusuke

    2011-01-01

    The silicon molding technique is described for patterning of NdFeB/Ta multilayered magnetic films and NdFeB magnetic powder at the micron scale. Silicon trenches are seamlessly filled by 12-μm-thick NdFeB/Ta multilayered magnetic films with a magnetic retentivity of 1.3 T. The topography image and magnetic field distribution image are measured using an atomic force microscope and a magnetic force microscope, respectively. Using a silicon molding technique complemented by a lift-off process, NdFeB magnetic powder is utilized to fabricate magnetic microstructures. Silicon trenches as narrow as 20 μm are filled by a mixture of magnetic powder and wax powder. The B-H hysteresis loop of the patterned magnetic powder is characterized using a vibrating sample magnetometer, which shows a magnetic retentivity of approximately 0.37 T. - Highlights: → We demonstrate the fabrication of micro-magnets using silicon molding processes. → NdFeB/Ta films are well filled in silicon trenches with a thickness of 12 μm. → The 12-μm-thick NdFeB/Ta magnetic film shows a retentivity of 1.3 T. → Magnetic structures as narrow as 20 μm are fabricated using NdFeB magnetic powder. → VSM measurement shows a retentivity of 0.37 T for patterned NdFeB magnetic powder.

  17. Fabrication of NdFeB microstructures using a silicon molding technique for NdFeB/Ta multilayered films and NdFeB magnetic powder

    Energy Technology Data Exchange (ETDEWEB)

    Jiang Yonggang, E-mail: yonggangj@gmail.com [School of Mechanical Engineering and Automation, Beihang University, Xueyuan Road No. 37, Haidian District, Beijing 100191 (China); Maenaka Human-Sensing Fusion project, Japan Science and Technology Agency, 2167 Shosha, Himeji, Hyogo 671-2280 (Japan); Fujita, Takayuki [Maenaka Human-Sensing Fusion project, Japan Science and Technology Agency, 2167 Shosha, Himeji, Hyogo 671-2280 (Japan); Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280 (Japan); Uehara, Minoru [NEOMAX Co. Ltd., 2-15-17, Egawa, Shimamoto-Cho, Mishima-gun, Osaka 618-0013 (Japan); Iga, Yuki [Maenaka Human-Sensing Fusion project, Japan Science and Technology Agency, 2167 Shosha, Himeji, Hyogo 671-2280 (Japan); Hashimoto, Taichi [Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280 (Japan); Hao, Xiuchun; Higuchi, Kohei [Maenaka Human-Sensing Fusion project, Japan Science and Technology Agency, 2167 Shosha, Himeji, Hyogo 671-2280 (Japan); Maenaka, Kazusuke [Maenaka Human-Sensing Fusion project, Japan Science and Technology Agency, 2167 Shosha, Himeji, Hyogo 671-2280 (Japan); Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280 (Japan)

    2011-11-15

    The silicon molding technique is described for patterning of NdFeB/Ta multilayered magnetic films and NdFeB magnetic powder at the micron scale. Silicon trenches are seamlessly filled by 12-{mu}m-thick NdFeB/Ta multilayered magnetic films with a magnetic retentivity of 1.3 T. The topography image and magnetic field distribution image are measured using an atomic force microscope and a magnetic force microscope, respectively. Using a silicon molding technique complemented by a lift-off process, NdFeB magnetic powder is utilized to fabricate magnetic microstructures. Silicon trenches as narrow as 20 {mu}m are filled by a mixture of magnetic powder and wax powder. The B-H hysteresis loop of the patterned magnetic powder is characterized using a vibrating sample magnetometer, which shows a magnetic retentivity of approximately 0.37 T. - Highlights: > We demonstrate the fabrication of micro-magnets using silicon molding processes. > NdFeB/Ta films are well filled in silicon trenches with a thickness of 12 {mu}m. > The 12-{mu}m-thick NdFeB/Ta magnetic film shows a retentivity of 1.3 T. > Magnetic structures as narrow as 20 {mu}m are fabricated using NdFeB magnetic powder. > VSM measurement shows a retentivity of 0.37 T for patterned NdFeB magnetic powder.

  18. 75 MeV boron ion irradiation studies on Si PIN photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Prabhakara Rao, Y.P.; Praveen, K.C. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India); Rejeena Rani, Y. [Integrated Circuits Division, Bharat Electronics Limited, Bangalore 560013, Karnataka (India); Tripathi, Ambuj [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Gnana Prakash, A.P., E-mail: gnanap@hotmail.com [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India)

    2013-12-01

    The highly sensitive silicon PIN photodiodes were fabricated to use in radiation environments. The Si PIN photodiodes are coated with 150 nm silicon dioxide (SiO{sub 2}) as anti-reflective (AR) coating. The presence of AR coating on the performance of irradiated PIN photodiodes is studied up to a total dose of 10 Mrad. The effects of 75 MeV boron (B{sup 5+}) ions and {sup 60}Co gamma radiation on the I–V, C–V and spectral responses of PIN photodiodes were studied systematically to understand the radiation tolerance of the devices. The 75 MeV B{sup 5+} irradiation results are compared with {sup 60}Co gamma irradiated results in the same dose range for 1 mm × 1 mm and 10 mm × 10 mm active area PIN photodiodes. The irradiation results show that the ion irradiated PIN photodiodes show more degradation when compared {sup 60}Co gamma irradiated devices. The irradiation results are presented in this paper and the possible mechanism behind the degradation of photodiodes is also discussed in the paper.

  19. The Effects of a High Magnetic Field on the Annealing of [(Fe0.5Co0.50.75B0.2Si0.05]96Nb4 Bulk Metallic Glass

    Directory of Open Access Journals (Sweden)

    Peng Jia

    2016-11-01

    Full Text Available In contrast with amorphous alloys, nanocrystalline soft magnetic materials show improved thermal stability and higher soft magnetic properties. The nanocrystalline soft magnetic composites are usually fabricated by partially crystallizing from parent amorphous alloys. This paper reports our experimental observation on the sequence of crystallization in metallic glass under a high magnetic field (HMF. An application of a HMF to bulk metallic glass (BMG of [(Fe0.5Co0.50.75B0.2Si0.05]96Nb4 prioritizes the precipitation of α-(Fe,Co phase separated from the subsequent precipitation of borides, (Fe,Co23B6, upon isothermal annealing at a glass transition temperature. Furthermore, it was observed that, through the annealing treatment under a HMF, a soft magnetic nanocomposite, in which only α-(Fe,Co phase uniformly distributes in amorphous matrix, was achieved for boron-bearing BMG. The promotion of the α-Fe or (Fe,Co phase and the prevention of the boride phases during the isothermal annealing process help to produce high-quality soft magnetic nanocomposite materials. The mechanism by which a HMF influences the crystallization sequence was interpreted via certain changes in Gibbs free energies for two ferromagnetic phases. This finding evidences that the annealing treatment under a HMF is suitable for enhancing the soft magnetic properties of high B content (Fe,Co-based bulk amorphous and nanocrystalline materials.

  20. Formation of shallow boron emitters in crystalline silicon using flash lamp annealing: Role of excess silicon interstitials

    Energy Technology Data Exchange (ETDEWEB)

    Riise, Heine Nygard, E-mail: h.n.riise@fys.uio.no; Azarov, Alexander; Svensson, Bengt G.; Monakhov, Edouard [Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P. O. Box 1048 Blindern, N-0316 Oslo (Norway); Schumann, Thomas; Hübner, Renè; Skorupa, Wolfgang [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P. O. Box 510119, 01314 Dresden (Germany)

    2015-07-13

    Shallow, Boron (B)-doped p{sup +} emitters have been realized using spin-on deposition and Flash Lamp Annealing (FLA) to diffuse B into monocrystalline float zone Silicon (Si). The emitters extend between 50 and 140 nm in depth below the surface, have peak concentrations between 9 × 10{sup 19 }cm{sup –3} and 3 × 10{sup 20 }cm{sup –3}, and exhibit sheet resistances between 70 and 3000 Ω/□. An exceptionally large increase in B diffusion occurs for FLA energy densities exceeding ∼93 J/cm{sup 2} irrespective of 10 or 20 ms pulse duration. The effect is attributed to enhanced diffusion of B caused by Si interstitial injection following a thermally activated reaction between the spin-on diffusant film and the silicon wafer.

  1. Release of Si from Silicon, a Ferrosilicon (FeSi) Alloy and a Synthetic Silicate Mineral in Simulated Biological Media

    Science.gov (United States)

    Herting, Gunilla; Jiang, Tao; Sjöstedt, Carin; Odnevall Wallinder, Inger

    2014-01-01

    Unique quantitative bioaccessibility data has been generated, and the influence of surface/material and test media characteristics on the elemental release process were assessed for silicon containing materials in specific synthetic body fluids at certain time periods at a fixed loading. The metal release test protocol, elaborated by the KTH team, has previously been used for classification, ranking, and screening of different alloys and metals. Time resolved elemental release of Si, Fe and Al from particles, sized less than 50 µm, of two grades of metallurgical silicon (high purity silicon, SiHG, low purity silicon, SiLG), an alloy (ferrosilicon, FeSi) and a mineral (aluminium silicate, AlSi) has been investigated in synthetic body fluids of varying pH, composition and complexation capacity, simple models of for example dermal contact and digestion scenarios. Individual methods for analysis of released Si (as silicic acid, Si(OH)4) in synthetic body fluids using GF-AAS were developed for each fluid including optimisation of solution pH and graphite furnace parameters. The release of Si from the two metallurgical silicon grades was strongly dependent on both pH and media composition with the highest release in pH neutral media. No similar effect was observed for the FeSi alloy or the aluminium silicate mineral. Surface adsorption of phosphate and lactic acid were believed to hinder the release of Si whereas the presence of citric acid enhanced the release as a result of surface complexation. An increased presence of Al and Fe in the material (low purity metalloid, alloy or mineral) resulted in a reduced release of Si in pH neutral media. The release of Si was enhanced for all materials with Al at their outermost surface in acetic media. PMID:25225879

  2. Release of Si from silicon, a ferrosilicon (FeSi alloy and a synthetic silicate mineral in simulated biological media.

    Directory of Open Access Journals (Sweden)

    Gunilla Herting

    Full Text Available Unique quantitative bioaccessibility data has been generated, and the influence of surface/material and test media characteristics on the elemental release process were assessed for silicon containing materials in specific synthetic body fluids at certain time periods at a fixed loading. The metal release test protocol, elaborated by the KTH team, has previously been used for classification, ranking, and screening of different alloys and metals. Time resolved elemental release of Si, Fe and Al from particles, sized less than 50 µm, of two grades of metallurgical silicon (high purity silicon, SiHG, low purity silicon, SiLG, an alloy (ferrosilicon, FeSi and a mineral (aluminium silicate, AlSi has been investigated in synthetic body fluids of varying pH, composition and complexation capacity, simple models of for example dermal contact and digestion scenarios. Individual methods for analysis of released Si (as silicic acid, Si(OH4 in synthetic body fluids using GF-AAS were developed for each fluid including optimisation of solution pH and graphite furnace parameters. The release of Si from the two metallurgical silicon grades was strongly dependent on both pH and media composition with the highest release in pH neutral media. No similar effect was observed for the FeSi alloy or the aluminium silicate mineral. Surface adsorption of phosphate and lactic acid were believed to hinder the release of Si whereas the presence of citric acid enhanced the release as a result of surface complexation. An increased presence of Al and Fe in the material (low purity metalloid, alloy or mineral resulted in a reduced release of Si in pH neutral media. The release of Si was enhanced for all materials with Al at their outermost surface in acetic media.

  3. Atomic layer deposition of boron-containing films using B{sub 2}F{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Mane, Anil U., E-mail: amane@anl.gov; Elam, Jeffrey W. [Argonne National Laboratory, Argonne, Illinois 60126 (United States); Goldberg, Alexander; Halls, Mathew D. [Schrödinger, Inc., San Diego, California 92122 (United States); Seidel, Thomas E. [Seitek50, Palm Coast, Florida 32135 (United States); Current, Michael I. [Current Scientific, San Jose, California 95124 (United States); Despres, Joseph; Byl, Oleg; Tang, Ying; Sweeney, Joseph [Entegris, Danbury, Connecticut 06810 (United States)

    2016-01-15

    Ultrathin and conformal boron-containing atomic layer deposition (ALD) films could be used as a shallow dopant source for advanced transistor structures in microelectronics manufacturing. With this application in mind, diboron tetrafluoride (B{sub 2}F{sub 4}) was explored as an ALD precursor for the deposition of boron containing films. Density functional theory simulations for nucleation on silicon (100) surfaces indicated better reactivity of B{sub 2}F{sub 4} in comparison to BF{sub 3}. Quartz crystal microbalance experiments exhibited growth using either B{sub 2}F{sub 4}-H{sub 2}O for B{sub 2}O{sub 3} ALD, or B{sub 2}F{sub 4}-disilane (Si{sub 2}H{sub 6}) for B ALD, but in both cases, the initial growth per cycle was quite low (≤0.2 Å/cycle) and decreased to near zero growth after 8–30 ALD cycles. However, alternating between B{sub 2}F{sub 4}-H{sub 2}O and trimethyl aluminum (TMA)-H{sub 2}O ALD cycles resulted in sustained growth at ∼0.65 Å/cycle, suggesting that the dense –OH surface termination produced by the TMA-H{sub 2}O combination enhances the uptake of B{sub 2}F{sub 4} precursor. The resultant boron containing films were analyzed for composition by x-ray photoelectron spectroscopy, and capacitance measurements indicated an insulating characteristic. Finally, diffused boron profiles less than 100 Å were obtained after rapid thermal anneal of the boron containing ALD film.

  4. Surface PIXE analysis of phosphorus in a thin SiO2 (P, B) CVD layer deposited onto Si substrate

    International Nuclear Information System (INIS)

    Roumie, M.; Nsouli, B.

    2001-01-01

    Phosphorus determination, at level of percent, in Si matrix is not an easy analytical task. The analyzed materials arc Borophosphosilicate glass which are an important component of silicon based semiconductor technology. It's a thin SiO2 layer (400 nm) doped with boron and phosphorus using, in general, CVD (Chemical Vapor Deposition) process, in order to improve its plasticity, and deposited onto Si substrate. Therefore, the mechanical behaviour of the CVD SiO2 (P, B) layer is very sensitive to the phosphorus concentration. In this work we explore the capability of FIXE (Particle Induced X-ray Emission) to monitor a rapid and accurate quantification of P which is usually very low in such materials (few percent of the thin CVD layer deposited onto a silicon substrate). A systematic study is undertaken using Proton (0.5-3 MeV energy) and helium (1-3 MeV energy) beams, different thickness of X-ray absorber (131 and 146 μm of Kapton filter) and different tilting angles (0,45,60 and 80 deg.). The optimized measurement conditions should improve the P signal detection comparing to the Si and Background ones

  5. Perpendicular magnetic anisotropy in Co2FeAl0.5Si0.5/MgO bottom electrodes for magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Li, X.Q.; Wu, Y.; Gao, S.; Xu, X.G.; Miao, J.; Jiang, Y.

    2013-01-01

    Perpendicular magnetic anisotropy (PMA) was achieved in annealed Co 2 FeAl 0.5 Si 0.5 (CFAS)/MgO-based multilayers with good thermal stability up to 400 °C and a large anisotropy energy density K u over 2.0 × 10 5 J/m 3 . The thickness of the full-Heusler CFAS film to maintain PMA is up to 4.8 nm in which the co-existence of disordered A2, ordered B2 and fully ordered L2 1 structures is observed. X-ray photoelectron spectroscopy analysis demonstrates that the origin of the PMA is the hybridization between Co 3d and O 2p orbitals at the CFAS/MgO interface. - Highlights: • We achieved perpendicular magnetic anisotropy (PMA) in Co 2 FeAl 0.5 Si 0.5 (4.8 nm) film; • L2 1 , B2 and A2 phases coexist in perpendicular magnetic anisotropic Co 2 FeAl 0.5 Si 0.5 ; • Magnetic properties have strong dependence on the annealing temperature; • The PMA is induced by the hybridization between Co-3d and O-2p orbitals

  6. Thermodynamic analysis of binary Fe{sub 85}B{sub 15} to quinary Fe{sub 85}Si{sub 2}B{sub 8}P{sub 4}Cu{sub 1} alloys for primary crystallizations of α-Fe in nanocrystalline soft magnetic alloys

    Energy Technology Data Exchange (ETDEWEB)

    Takeuchi, A., E-mail: takeuchi@imr.tohoku.ac.jp; Zhang, Y.; Takenaka, K.; Makino, A. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)

    2015-05-07

    Fe-based Fe{sub 85}B{sub 15}, Fe{sub 84}B{sub 15}Cu{sub 1}, Fe{sub 82}Si{sub 2}B{sub 15}Cu{sub 1}, Fe{sub 85}Si{sub 2}B{sub 12}Cu{sub 1}, and Fe{sub 85}Si{sub 2}B{sub 8}P{sub 4}Cu{sub 1} (NANOMET{sup ®}) alloys were experimental and computational analyzed to clarify the features of NANOMET that exhibits high saturation magnetic flux density (B{sub s}) nearly 1.9 T and low core loss than conventional nanocrystalline soft magnetic alloys. The X-ray diffraction analysis for ribbon specimens produced experimentally by melt spinning from melts revealed that the samples were almost formed into an amorphous single phase. Then, the as-quenched samples were analyzed with differential scanning calorimeter (DSC) experimentally for exothermic enthalpies of the primary and secondary crystallizations (ΔH{sub x1} and ΔH{sub x2}) and their crystallization temperatures (T{sub x1} and T{sub x2}), respectively. The ratio ΔH{sub x1}/ΔH{sub x2} measured by DSC experimentally tended to be extremely high for the Fe{sub 85}Si{sub 2}B{sub 8}P{sub 4}Cu{sub 1} alloy, and this tendency was reproduced by the analysis with commercial software, Thermo-Calc, with database for Fe-based alloys, TCFE7 for Gibbs free energy (G) assessments. The calculations exhibit that a volume fraction (V{sub f}) of α-Fe tends to increase from 0.56 for the Fe{sub 85}B{sub 15} to 0.75 for the Fe{sub 85}Si{sub 2}B{sub 8}P{sub 4}Cu{sub 1} alloy. The computational analysis of the alloys for G of α-Fe and amorphous phases (G{sub α-Fe} and G{sub amor}) shows that a relationship G{sub α-Fe} ∼ G{sub amor} holds for the Fe{sub 85}Si{sub 2}B{sub 12}Cu{sub 1}, whereas G{sub α-Fe} < G{sub amor} for the Fe{sub 85}Si{sub 2}B{sub 8}P{sub 4}Cu{sub 1} alloy at T{sub x1} and that an extremely high V{sub f} = 0.75 was achieved for the Fe{sub 85}Si{sub 2}B{sub 8}P{sub 4}Cu{sub 1} alloy by including 2.8 at. % Si and 4.5 at. % P into α-Fe. These computational results indicate that the Fe{sub 85}Si{sub 2}B

  7. Mechanical properties of Fe-Ni-Cr-Si-B bulk glassy alloy

    International Nuclear Information System (INIS)

    Lee, Kee Ahn; Kim, Yong Chan; Kim, Jung Han; Lee, Chong Soo; Namkung, Jung; Kim, Moon Chul

    2007-01-01

    The mechanical properties and crystallization behavior of new Fe-Ni-Cr-Si-B-based bulk glassy alloys were investigated. The suitability of the continuous roll casting method for the production of bulk metallic glass (BMG) sheets in such alloy systems was also examined. BMG samples (Fe-Ni-Cr-Si-B, Fe-Ni-Zr-Cr-Si-B, Fe-Ni-Zr-Cr-W-Si-B) in amorphous strip, cylindrical, and sheet forms were prepared through melt spinning, copper mold casting, and twin roll strip casting, respectively. Fe-Ni-Cr-Si-B alloy exhibited compressive strength of up to 2.93 GPa and plastic strain of about 1.51%. On the other hand, the Fe-Ni-Zr-Cr-Si-B, composite-type bulk sample with diameter of 2.0 mm showed remarkable compressive plastic strain of about 4.03%. The addition of zirconium was found to enhance the homogeneous precipitation of nanocrystalline less than 7 nm and to develop a hybrid-composite microstructure with increasing sample thickness. Twin roll strip casting was successfully applied to the fabrication of sheets in Fe-Ni-Cr-Si-B-based BMGs. The combined characteristics of high mechanical properties and ease of microstructure control proved to be promising in terms of the future progress of structural bulk amorphous alloys

  8. Mechanical properties of Fe-Ni-Cr-Si-B bulk glassy alloy

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Kee Ahn [School of Advanced Materials Engineering, Andong National University, Andong 760-749 (Korea, Republic of)]. E-mail: keeahn@andong.ac.kr; Kim, Yong Chan [New Metals Research Team, RIST, Pohang 790-330 (Korea, Republic of); Kim, Jung Han [Center for Advanced Aerospace materials, POSTECH, Pohang 790-784 (Korea, Republic of); Lee, Chong Soo [Center for Advanced Aerospace materials, POSTECH, Pohang 790-784 (Korea, Republic of); Namkung, Jung [New Metals Research Team, RIST, Pohang 790-330 (Korea, Republic of); Kim, Moon Chul [New Metals Research Team, RIST, Pohang 790-330 (Korea, Republic of)

    2007-03-25

    The mechanical properties and crystallization behavior of new Fe-Ni-Cr-Si-B-based bulk glassy alloys were investigated. The suitability of the continuous roll casting method for the production of bulk metallic glass (BMG) sheets in such alloy systems was also examined. BMG samples (Fe-Ni-Cr-Si-B, Fe-Ni-Zr-Cr-Si-B, Fe-Ni-Zr-Cr-W-Si-B) in amorphous strip, cylindrical, and sheet forms were prepared through melt spinning, copper mold casting, and twin roll strip casting, respectively. Fe-Ni-Cr-Si-B alloy exhibited compressive strength of up to 2.93 GPa and plastic strain of about 1.51%. On the other hand, the Fe-Ni-Zr-Cr-Si-B, composite-type bulk sample with diameter of 2.0 mm showed remarkable compressive plastic strain of about 4.03%. The addition of zirconium was found to enhance the homogeneous precipitation of nanocrystalline less than 7 nm and to develop a hybrid-composite microstructure with increasing sample thickness. Twin roll strip casting was successfully applied to the fabrication of sheets in Fe-Ni-Cr-Si-B-based BMGs. The combined characteristics of high mechanical properties and ease of microstructure control proved to be promising in terms of the future progress of structural bulk amorphous alloys.

  9. Magnetostriction of the polycrystalline Fe80Al20 alloy doped with boron

    International Nuclear Information System (INIS)

    Bormio-Nunes, Cristina; Teodoro dos Santos, Claudio; Botani de Souza Dias, Mateus; Doerr, Mathias; Granovsky, Sergey; Loewenhaupt, Michael

    2012-01-01

    Highlights: ► Fe 80 Al 20 polycrystalline alloy magnetostriction 40 ppm increased to 80 ppm due to 2% of B doping. ► B stabilizes α-FeAl phase and a coexistence of α-FeAl + Fe 3 Al improves magnetostriction. ► Presence of Fe 2 B phase causes domain rearrangement revealed by the decrease of the volume magnetostriction. - Abstract: The doping of Fe 80 Al 20 polycrystalline alloy with 2% of boron increased the total magnetostriction twofold compared to a sample without boron. A value close to 80 ppm was achieved at 300 K. The microstructures of the boron-doped alloys show a dendritically solidified matrix with interdendritic α-FeAl and/or Fe 3 Al and Fe 2 B eutectic between the grains. The XRD analysis reveals an increase in the volume fraction of α-FeAl and a correspondent decrease of the Fe 3 Al phase volume fraction as the boron content increases. The increase of the volume fraction of this tetragonal Fe 2 B phase in the samples doped with boron causes the decrease of the strong volume magnetostriction that was observed in the alloy without boron. There is some evidence that the improvement of the magnetostriction magnitude due to the addition of boron to the Fe 80 Al 20 alloy could reach the maximal magnetostriction if the 1:1 optimal ratio of the volume fractions of the α-FeAl and Fe 3 Al phases could be reached.

  10. Interfacial mixing in double-barrier magnetic tunnel junctions with amorphous NiFeSiB layers

    International Nuclear Information System (INIS)

    Chun, B.S.; Ko, S.P.; Hwang, J.Y.; Rhee, J.R.; Kim, T.W.; Kim, Y.K.

    2007-01-01

    Double-barrier magnetic tunnel junctions (DMTJs) comprising Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO x /free layer (CoFe 4/NiFeSiB 2/CoFe 4, CoFe 10, or NiFeSiB 10)/AlO x /CoFe 7/IrMn 10/Ru 60 (nm) have been examined with an emphasis given on understanding the interfacial mixing effects. The DMTJ, consisted of NiFeSiB, shows low switching field and low bias voltage dependence because the amorphous NiFeSiB has lower M S (=800 emu/cm 3 ) and offers smoother interfaces than polycrystalline CoFe. An interesting feature observed in the CoFe/NiFeSiB/CoFe sandwich free layered DMTJ is the presence of a wavy MR transfer curve at high-resistance region. Because the polycrystalline CoFe usually grows into a columnar structure, diamagnetic CoSi, paramagnetic FeSi, and/or diamagnetic CoB might have been formed during the sputter-deposition process. By employing electron energy loss spectrometry (EELS) and Auger electron spectroscopy (AES), we were able to confirm that Si and B atoms were arranged evenly in the top and bottom portions of AlO x /CoFe interfaces. This means that the interfacial mixing resulted in a distorted magnetization reversal process

  11. Enhancement of the Si p-n diode NIR photoresponse by embedding β-FeSi2 nanocrystallites.

    Science.gov (United States)

    Shevlyagin, A V; Goroshko, D L; Chusovitin, E A; Galkin, K N; Galkin, N G; Gutakovskii, A K

    2015-10-05

    By using solid phase epitaxy of thin Fe films and molecular beam epitaxy of Si, a p(+)-Si/p-Si/β-FeSi2 nanocrystallites/n-Si(111) diode structure was fabricated. Transmission electron microscopy data confirmed a well-defined multilayered structure with embedded nanocrystallites of two typical sizes: 3-4 and 15-20 nm, and almost coherent epitaxy of the nanocrystallites with the Si matrix. The diode at zero bias conditions exhibited a current responsivity of 1.7 mA/W, an external quantum efficiency of about 0.2%, and a specific detectivity of 1.2 × 10(9) cm × Hz(1/2)/W at a wavelength of 1300 nm at room temperature. In the avalanche mode, the responsivity reached up to 20 mA/W (2% in terms of efficiency) with a value of avalanche gain equal to 5. The data obtained indicate that embedding of β-FeSi2 nanocrystallites into the depletion region of the Si p-n junction results in expansion of the spectral sensitivity up to 1600 nm and an increase of the photoresponse by more than two orders of magnitude in comparison with a conventional Si p-n junction. Thereby, fabricated structure combines advantage of the silicon photodiode functionality and simplicity with near infrared light detection capability of β-FeSi2.

  12. On the Correlation between Morphology of alpha and Its Crystallographic Orientation Relationship with TiB and Beta in Boron Containing Ti-5Al-5Mo-5V-3Cr-0.5Fe Alloy (Preprint)

    Science.gov (United States)

    2012-01-01

    orientation microscopy studies on a boron containing version of the commercial Ti- 5Al-5Mo-5V-3Cr-0.5Fe ( Ti5553 ) alloy. 15. SUBJECT TERMS Ti5553 ...of the commercial Ti-5Al-5Mo-5V-3Cr-0.5Fe ( Ti5553 ) alloy. Keywords: Ti5553 , TiB, EBSD, crystallography, orientation relationship. Paper There has...absence of orientation relationships between the α, β and TiB phases, on the morphology of α nucleating from TiB in the Ti5553 alloy.. The base

  13. Plasma immersion ion implantation of boron for ribbon silicon solar cells

    Directory of Open Access Journals (Sweden)

    Derbouz K.

    2013-09-01

    Full Text Available In this work, we report for the first time on the solar cell fabrication on n-type silicon RST (for Ribbon on Sacrificial Template using plasma immersion ion implantation. The experiments were also carried out on FZ silicon as a reference. Boron was implanted at energies from 10 to 15 kV and doses from 1015 to 1016 cm-2, then activated by a thermal annealing in a conventional furnace at 900 and 950 °C for 30 min. The n+ region acting as a back surface field was achieved by phosphorus spin-coating. The frontside boron emitter was passivated either by applying a 10 nm deposited SiOX plasma-enhanced chemical vapor deposition (PECVD or with a 10 nm grown thermal oxide. The anti-reflection coating layer formed a 60 nm thick SiNX layer. We show that energies less than 15 kV and doses around 5 × 1015 cm-2 are appropriate to achieve open circuit voltage higher than 590 mV and efficiency around 16.7% on FZ-Si. The photovoltaic performances on ribbon silicon are so far limited by the bulk quality of the material and by the quality of the junction through the presence of silicon carbide precipitates at the surface. Nevertheless, we demonstrate that plasma immersion ion implantation is very promising for solar cell fabrication on ultrathin silicon wafers such as ribbons.

  14. The fraction of substitutional boron in silicon during ion implantation and thermal annealing

    International Nuclear Information System (INIS)

    Caturla, M.J.; Johnson, M.D.; Diaz de la Rubia, T.

    1998-01-01

    We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from ab initio calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800 degree C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. copyright 1998 American Institute of Physics

  15. Use of B{sub 2}O{sub 3} films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Kalkofen, Bodo, E-mail: bodo.kalkofen@ovgu.de; Amusan, Akinwumi A.; Bukhari, Muhammad S. K.; Burte, Edmund P. [Institute of Micro and Sensor Systems, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Garke, Bernd [Institute for Experimental Physics, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Lisker, Marco [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Gargouri, Hassan [SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany)

    2015-05-15

    Plasma-assisted atomic layer deposition (PALD) was carried for growing thin boron oxide films onto silicon aiming at the formation of dopant sources for shallow boron doping of silicon by rapid thermal annealing (RTA). A remote capacitively coupled plasma source powered by GaN microwave oscillators was used for generating oxygen plasma in the PALD process with tris(dimethylamido)borane as boron containing precursor. ALD type growth was obtained; growth per cycle was highest with 0.13 nm at room temperature and decreased with higher temperature. The as-deposited films were highly unstable in ambient air and could be protected by capping with in-situ PALD grown antimony oxide films. After 16 weeks of storage in air, degradation of the film stack was observed in an electron microscope. The instability of the boron oxide, caused by moisture uptake, suggests the application of this film for testing moisture barrier properties of capping materials particularly for those grown by ALD. Boron doping of silicon was demonstrated using the uncapped PALD B{sub 2}O{sub 3} films for RTA processes without exposing them to air. The boron concentration in the silicon could be varied depending on the source layer thickness for very thin films, which favors the application of ALD for semiconductor doping processes.

  16. Electroluminescence properties of Si MOS structures with incorporation of FeSi2 precipitates formed by iron implantation

    International Nuclear Information System (INIS)

    Chow, C.F.; Wong, S.P.; Gao, Y.; Ke, N.; Li, Q.; Cheung, W.Y.; Lourenco, M.A.; Homewood, K.P.

    2005-01-01

    Silicon MOS structures with FeSi 2 precipitates embedded in the MOS active region have been fabricated and the electroluminescence (EL) properties from these FeSi 2 -Si MOS structures were measured as a function of temperature from 80 K to 300 K. Clear EL signals were observed even at room temperature for samples prepared at appropriate processing conditions. The EL spectra consist of two peaks, one attributed to FeSi 2 and the other attributed to Si band edge emission. While the intensity of the FeSi 2 peak showed the usual thermal quenching behavior, the Si band edge emission showed the opposite trend with its intensity increased with increasing temperature. Details of the line shapes and their temperature dependence are analyzed and discussed

  17. Effects of Different Levels of Boron on Microstructure and Hardness of CoCrFeNiAlxCu0.7Si0.1By High-Entropy Alloy Coatings by Laser Cladding

    Directory of Open Access Journals (Sweden)

    Yizhu He

    2017-01-01

    Full Text Available High-entropy alloys (HEAs are novel solid solution strengthening metallic materials, some of which show attractive mechanical properties. This paper aims to reveal the effect of adding small atomic boron on the interstitial solid solution strengthening ability in the laser cladded CoCrFeNiAlxCu0.7Si0.1By (x = 0.3, x = 2.3, and 0.3 ≤ y ≤ 0.6 HEA coatings. The results show that laser rapid solidification effectively prevents brittle boride precipitation in the designed coatings. The main phase is a simple face-centered cubic (FCC matrix when the Al content is equal to 0.3. On the other hand, the matrix transforms to single bcc solid solution when x increases to 2.3. Increasing boron content improves the microhardness of the coatings, but leads to a high degree of segregation of Cr and Fe in the interdendritic microstructure. Furthermore, it is worth noting that CoCrFeNiAl0.3Cu0.7Si0.1B0.6 coatings with an FCC matrix and a modulated structure on the nanometer scale exhibit an ultrahigh hardness of 502 HV0.5.

  18. Fabrication of FeSi and Fe{sub 3}Si compounds by electron beam induced mixing of [Fe/Si]{sub 2} and [Fe{sub 3}/Si]{sub 2} multilayers grown by focused electron beam induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Porrati, F.; Sachser, R.; Huth, M. [Physikalisches Institut, Goethe-Universität, Max-von-Laue-Str. 1, D-60438 Frankfurt am Main (Germany); Gazzadi, G. C. [S3 Center, Nanoscience Institute-CNR, Via Campi 213/a, 41125 Modena (Italy); Frabboni, S. [S3 Center, Nanoscience Institute-CNR, Via Campi 213/a, 41125 Modena (Italy); FIM Department, University of Modena and Reggio Emilia, Via G. Campi 213/a, 41125 Modena (Italy)

    2016-06-21

    Fe-Si binary compounds have been fabricated by focused electron beam induced deposition by the alternating use of iron pentacarbonyl, Fe(CO){sub 5}, and neopentasilane, Si{sub 5}H{sub 12} as precursor gases. The fabrication procedure consisted in preparing multilayer structures which were treated by low-energy electron irradiation and annealing to induce atomic species intermixing. In this way, we are able to fabricate FeSi and Fe{sub 3}Si binary compounds from [Fe/Si]{sub 2} and [Fe{sub 3}/Si]{sub 2} multilayers, as shown by transmission electron microscopy investigations. This fabrication procedure is useful to obtain nanostructured binary alloys from precursors which compete for adsorption sites during growth and, therefore, cannot be used simultaneously.

  19. Crystallisation kinetics of amorphous Fe72.5-xCu1Nb4.5Si10+x+yB12-y alloy

    International Nuclear Information System (INIS)

    Miglierini, M.; Lipka, J.; Sitek, J.

    1994-01-01

    Fe 73.5 Cu 1 Nb 3 Si 13.5 B 9 and Fe 72.5-x Cu 1 Nb 4.5 Si 10+x+y B 12-y alloys are compared from the point of view of crystallisation behaviour and changes in the short-range order in the amorphous reminder. The increase in Nb to 4.5 at.% in the latter system slows down the formation of nanocrystals to approximately 40% even after 16 hours of anneal at 550 C for x = 0.5, y = 3. Segregation-induced changes in the short-range order are manifested via hyperfine field distributions corresponding to the amorphous reminder. (orig.)

  20. Interface structure and stabilization of metastable B2-FeSi/Si(111) studied with low-energy electron diffraction and density functional theory

    International Nuclear Information System (INIS)

    Walter, S; Blobner, F; Krause, M; Mueller, S; Heinz, K; Starke, U

    2003-01-01

    We present a combined experimental and theoretical investigation of the interface between a B2-type FeSi film and Si(111). Using an ultra-thin B2-FeSi film grown on Si(111), the interface is still reached by electrons, so quantitative low-energy electron diffraction (LEED) could be applied to determine the bonding geometry experimentally. As a result, the local configuration at the shallow buried interface is characterized by near-substrate Fe atoms being 8-fold coordinated to Si atoms and by the silicide unit cell being rotated by 180 deg. with respect to the Si unit cell (B8 configuration). The interface energetics were explored by total-energy calculations using density functional theory (DFT). The B8-type interface proves to be the most stable one, consistent with the experimental findings. The atomic geometries obtained experimentally (LEED) and theoretically (DFT) agree within the limits of errors. Additionally, the calculations explain the stabilization of the B2 phase, which is unstable as bulk material: the analysis of the elastic behaviour reveals a reversed energy hierarchy of B2 and the bulk stable B20 phase when epitaxial growth on Si(111) is enforced

  1. The effects of boron on Tb0.27Dy0.73Fe2 compound

    International Nuclear Information System (INIS)

    Wu Lei; Chen Xicheng; Chen Xishen

    1995-01-01

    The magnetostrictive properties and microstructure of Tb 0.27 Dy 0.73 Fe 2 B x (x=0, 0.05, 0.1, 0.15, 0.2) have been investigated. Measurement of magnetic properties, X-ray diffraction and magnetostriction were made on Tb 0.27 Dy 0.73 Fe 2 B x polycrystalline samples prepared by arc melting. With the increase of boron content x, the iron-rich phase which leads to the detriment of magnetostrictive properties, decreases. The matrix phase of these alloys also has the MgCu 2 structure. The lattice constant and Curie transition temperature change only slightly. The doping of boron in the Tb 0.27 Dy 0.73 Fe 2 alloy can restrain the emergence of the iron-rich phase. The peritectic region probably shifts slightly with the addition of boron. ((orig.))

  2. The diffusion bonding of silicon carbide and boron carbide using refractory metals

    International Nuclear Information System (INIS)

    Cockeram, B.V.

    1999-01-01

    Joining is an enabling technology for the application of structural ceramics at high temperatures. Metal foil diffusion bonding is a simple process for joining silicon carbide or boron carbide by solid-state, diffusive conversion of the metal foil into carbide and silicide compounds that produce bonding. Metal diffusion bonding trials were performed using thin foils (5 microm to 100 microm) of refractory metals (niobium, titanium, tungsten, and molybdenum) with plates of silicon carbide (both α-SiC and β-SiC) or boron carbide that were lapped flat prior to bonding. The influence of bonding temperature, bonding pressure, and foil thickness on bond quality was determined from metallographic inspection of the bonds. The microstructure and phases in the joint region of the diffusion bonds were evaluated using SEM, microprobe, and AES analysis. The use of molybdenum foil appeared to result in the highest quality bond of the metal foils evaluated for the diffusion bonding of silicon carbide and boron carbide. Bonding pressure appeared to have little influence on bond quality. The use of a thinner metal foil improved the bond quality. The microstructure of the bond region produced with either the α-SiC and β-SiC polytypes were similar

  3. Identification of photoluminescence P line in indium doped silicon as In{sub Si}-Si{sub i} defect

    Energy Technology Data Exchange (ETDEWEB)

    Lauer, Kevin, E-mail: klauer@cismst.de; Möller, Christian [CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt (Germany); Schulze, Dirk [TU Ilmenau, Institut für Physik, Weimarer Str. 32, 98693 Ilmenau (Germany); Ahrens, Carsten [Infineon Technologies AG, Am Campeon 1-12, 85579 Neubiberg (Germany)

    2015-01-15

    Indium and carbon co-implanted silicon was investigated by low-temperature photoluminescence spectroscopy. A photoluminescence peak in indium doped silicon (P line) was found to depend on the position of a silicon interstitial rich region, the existence of a SiN{sub x}:H/SiO{sub x} stack and on characteristic illumination and annealing steps. These results led to the conclusion that silicon interstitials are involved in the defect and that hydrogen impacts the defect responsible for the P line. By applying an unique illumination and annealing cycle we were able to link the P line defect with a defect responsible for degradation of charge carrier lifetime in indium as well as boron doped silicon. We deduced a defect model consisting of one acceptor and one silicon interstitial atom denoted by A{sub Si}-Si{sub i}, which is able to explain the experimental data of the P line as well as the light-induced degradation in indium and boron doped silicon. Using this model we identified the defect responsible for the P line as In{sub Si}-Si{sub i} in neutral charge state and C{sub 2v} configuration.

  4. Study on Formation Mechanism of Fayalite (Fe2SiO4) by Solid State Reaction in Sintering Process

    Science.gov (United States)

    Wang, Zhongbing; Peng, Bing; Zhang, Lifeng; Zhao, Zongwen; Liu, Degang; Peng, Ning; Wang, Dawei; He, Yinghe; Liang, Yanjie; Liu, Hui

    2018-04-01

    The sintering behaviors among SiO2, FeS and Fe3O4 were detected to reveal the formation mechanism of Fe2SiO4. The results indicated that the formation mechanism is divided into five steps: (1) migration of O2- induced by S2- under a reducing atmosphere; (2) formation of Fe3O4- β ; (3) migration of Fe(II) into a ferrite cluster structure to gain oxygen and form Fe3- x O4; (4) Fe(II) invaded the silicon atomic position and released Si(IV); and (5) formation of the stable structure of Fe2SiO4 through chemical diffusion between cations of Fe(II) and Si(IV). These findings can provide theoretical support for controlling the process of the recovery of valuable metals in copper slag through the combined roasting modification-magnetic separation process.

  5. Growth of β-FeSi2 layers on Si (111) by solid phase and reactive deposition epitaxies

    International Nuclear Information System (INIS)

    Miquita, D.R.; Paniago, R.; Rodrigues, W.N.; Moreira, M.V.B.; Pfannes, H.-D.; Oliveira, A.G. de

    2005-01-01

    Iron silicides were grown on Si (111) substrates by Solid Phase Epitaxy (SPE) and Reactive Deposition Epitaxy (RDE) to identify the optimum conditions to obtain the semiconducting β-FeSi 2 phase. The films were produced under different growth and annealing conditions and analyzed in situ and ex situ by X-ray Photoelectron Spectroscopy, and ex situ by Conversion Electron Moessbauer Spectroscopy. The use of these techniques allowed the investigation of different depth regions of the grown layer. Films of the ε-FeSi and β-FeSi 2 phases were obtained as well as the mixtures Fe 3 Si + ε-FeSi and ε-FeSi + β-FeSi 2 . The sequence Fe 3 Si→ε-FeSi→β-FeSi 2 was found upon annealing, where the phase transformation occurred due to the migration of silicon atoms from the substrate to the surface region of the grown layer. The best conditions for the phase transformation in SPE samples were met after annealing in the range 700 - 800 deg. C. For the RDE samples, the transition to the beta phase occurred between 600 and 700 deg. C, but pure β-FeSi 2 was obtained only after two hours of annealing at 700 deg. C

  6. Mo-Si-B-Based Coatings for Ceramic Base Substrates

    Science.gov (United States)

    Perepezko, John Harry (Inventor); Sakidja, Ridwan (Inventor); Ritt, Patrick (Inventor)

    2015-01-01

    Alumina-containing coatings based on molybdenum (Mo), silicon (Si), and boron (B) ("MoSiB coatings") that form protective, oxidation-resistant scales on ceramic substrate at high temperatures are provided. The protective scales comprise an aluminoborosilicate glass, and may additionally contain molybdenum. Two-stage deposition methods for forming the coatings are also provided.

  7. Effect of Co on Si and Fe-containing intermetallic compounds (IMCs) in Al-20Si-5Fe alloys

    Energy Technology Data Exchange (ETDEWEB)

    Fatih Kilicaslan, M. [Department of Physics, Faculty of Art and Science, Kastamonu University, Kastamonu (Turkey); Yilmaz, Fikret [Department of Physics, Faculty of Art and Science, Gaziosmanpasa University, Tokat (Turkey); Hong, Soon-Jik, E-mail: hongsj@kongju.ac.kr [Division of Advanced Materials Engineering, Institute for Rare Metals, Kongju National University, Cheonan 331717 (Korea, Republic of); Uzun, Orhan, E-mail: orhan.uzun@gop.edu.tr [Department of Physics, Faculty of Art and Science, Gaziosmanpasa University, Tokat (Turkey)

    2012-10-30

    The effects of cobalt addition on microstructure and mechanical properties of Al-20Si-5Fe-XCo (X=0, 1, 3, and 5) alloys were reported in this study. The alloys were produced by both conventional sand casting and melt-spinning at 20 m/s disk velocity. Microstructures of the samples were investigated using X-ray diffractometry (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Vickers micro-hardness tester was used for hardness measurements. Results showed that Co addition can alter morphology of Fe-bearing intermetallic compounds (IMCs) from long rod/needle-like structures to short rod-like ones, and lead to a more homogenous distribution in the microstructure. Addition of 5 wt% Co leads to a decrease in average size of the primary silicon phases in as-cast Al-Si alloys. In melt-spun alloys, with the addition of Co, the microstructure became finer and more homogenously distributed, while thickness of the featureless zone has seen great increase. The optimum Fe to Co ratio was found to be 1 for suppressing the undesirable effect of Fe-bearing acicular/needle-like intermetallic compounds.

  8. Crystallization of amorphous Fe78Si9B13 alloy

    International Nuclear Information System (INIS)

    Jakubczyk, E; Krajczyk, A; Jakubczyk, M

    2007-01-01

    The crystallization process of Fe 78 Si 9 B 13 metallic glass was investigated by DSC, X-ray diffraction, electrical resistivity, Hall effect and TEM methods. The investigations proved two-stages crystallization. By means of non-isothermal DSC experiments the activation energy and the Avrami exponent were determined for both stages. The created phases: α-Fe(Si) and (Fe,Si) 2 B were identified on the basis of X-ray and TEM investigations. However, TEM observations showed also a little amount of the FeB 49 phase as well as some rest of the amorphous phase. The electrical and Hall resistivities decrease abruptly after the creation of the phases out of the amorphous matrix

  9. Structural and magnetic properties of Fe76P5(Si0.3B0.5C0.2)19 amorphous alloy

    International Nuclear Information System (INIS)

    Lavorato, G.C.; Fiore, G.; Tiberto, P.; Baricco, M.; Sirkin, H.; Moya, J.A.

    2012-01-01

    Highlights: ► Fe 76 P 5 (Si 0.3 B 0.5 C 0.2 ) 19 amorphous alloy in ribbons and 1 mm and 2 mm rod samples. ► Good glass forming ability with ΔT = 50 K and γ = 0.37 and off-eutectic composition. ► Good soft magnetic properties with magnetization saturation of 1.44 T. ► Geometrical factors are the primary causes of magnetic losses in frequencies above 10 Hz. - Abstract: Recently, bulk amorphous alloys were produced in the Fe–B–Si–P–C system with high glass forming ability, excellent magnetic properties and the advantage of containing no expensive glass-forming elements, such as Ga, Y, Cr or Nb, having, therefore, a good perspective of commercial applications. In the present work, the Fe 76 P 5 (Si 0.3 B 0.5 C 0.2 ) 19 amorphous alloy prepared by two quenching techniques has been studied. Amorphous ribbons of about 40 μm thick were obtained by planar-flow casting together with cylinders having 1 and 2 mm diameter produced by copper mold injection casting. All the samples appear fully amorphous after X-ray diffraction analysis. A comprehensive set of thermal data (glass, crystallization, melting and liquidus temperatures) were obtained as well as a description of the melting and solidification processes. Mechanical microhardness tests showed that the samples have a hardness of 9.7 ± 0.3 GPa. Good soft-magnetic properties were obtained, including a high magnetization of 1.44 T and a low coercivity (4.5 A/m for ribbons and 7.5 A/m in the case of 1 mm rod samples, both in as-cast state). Thermomagnetic studies showed a Curie temperature around 665 K and the precipitation of new magnetic phases upon temperatures of 1000 K. Furthermore, the frequency dependence of magnetic losses at a fixed peak induction was studied. The results suggest the occurrence of a fine magnetic domain structure in bulk samples. The good soft magnetic properties of the bulk metallic glass obtained by copper mold casting for this particular Fe-based composition suggests possible

  10. Magnetic ordering in Sc{sub 2}CoSi{sub 2}-type R{sub 2}FeSi{sub 2} (R=Gd, Tb) and R{sub 2}CoSi{sub 2} (R=Y, Gd–Er) compounds

    Energy Technology Data Exchange (ETDEWEB)

    Morozkin, A.V., E-mail: morozkin@tech.chem.msu.ru [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, GSP-2, Moscow 119992 (Russian Federation); Knotko, A.V. [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, GSP-2, Moscow 119992 (Russian Federation); Yapaskurt, V.O. [Department of Petrology, Geological Faculty, Moscow State University, Leninskie Gory, Moscow 119992 (Russian Federation); Pani, M. [Department of Chemistry, University of Genova, Via Dodecaneso 31, 16146 Genova (Italy); Institute SPIN-CNR, C. Perrone 24, 16152 Genova (Italy); Nirmala, R. [Indian Institute of Technology Madras, Chennai 600036 (India); Quezado, S.; Malik, S.K. [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, Natal 59082-970 (Brazil)

    2016-09-01

    Magnetic and magnetocaloric properties of Sc{sub 2}CoSi{sub 2}-type R{sub 2}TSi{sub 2} (R=Gd–Er, T=Fe, Co) compounds have been studied using magnetization data. These indicate the presence of mixed ferromagnetic and antiferromagnetic interactions in these compounds. One observes a ferromagnetic transition followed by an antiferromagnetic order and a further possible spin-reorientation transition at low temperatures. Compared to Gd{sub 2}{Fe, Co}Si{sub 2}, the Tb{sub 2}FeSi{sub 2} and {Tb–Er}{sub 2}CoSi{sub 2} compounds exhibit remarkable hysteresis (for e.g. Tb{sub 2}FeSi{sub 2} shows residual magnetization M{sub res}/Tb=2.45 μ{sub B}, coercive field H{sub coer}=14.9 kOe, and critical field H{sub crit}~5 kOe at 5 K) possibly due to the magnetocrystalline anisotropy of the rare earth. The R{sub 2}{Fe, Co}Si{sub 2} show relatively small magnetocaloric effect (i.e. isothermal magnetic entropy change, ΔS{sub m}) around the magnetic transition temperature: the maximal value of MCE is demonstrated by Ho{sub 2}CoSi{sub 2} (ΔS{sub m}=−8.1 J/kg K at 72 K and ΔS{sub m}=−9.4 J/kg K at 23 K in field change of 50 kOe) and Er{sub 2}CoSi{sub 2} (ΔS{sub m}=−13.6 J/kg K at 32 K and ΔS{sub m}=−8.4 J/kg K at 12 K in field change of 50 kOe). - Highlights: • {Gd–Er}{sub 2}{Fe, Co}Si{sub 2} show high-temperature ferromagnetic-type transitions. • {Gd–Er}{sub 2}{Fe, Co}Si{sub 2} show low-temperature spin-reorientation transitions. • Tb{sub 2}FeSi{sub 2} and {Tb–Er}{sub 2}CoSi{sub 2} compounds exhibit low-temperature hysteresis. • Tb{sub 2}FeSi{sub 2} shows M{sub res}/Tb=2.45 μ{sub B}, H{sub coer}=14.9 kOe and H{sub crit} ~5 kOe at 5 K • Considerable magnetocaloric effect is exhibited by Ho{sub 2}CoSi{sub 2} and Er{sub 2}CoSi{sub 2}.

  11. (SiC/AlN)2 multilayer film as an effective protective coating for sintered NdFeB by magnetron sputtering

    Science.gov (United States)

    You, Yu; Li, Heqin; Huang, Yiqin; Tang, Qiong; Zhang, Jing; Xu, Jun

    2017-08-01

    SiC/AlN and (SiC/AlN)2 multilayer films with a well-arranged bilayer structure and a four-layer structure are prepared respectively on NdFeB substrates by a magnetron sputtering method. Crystal phase and microstructures of the SiC/AlN and (SiC/AlN)2 films are investigated using x-ray diffraction (XRD), field-emission scanning electron microscope (FESEM) and atomic force microscope (AFM). It is observed that the surface of the (SiC/AlN)2 four-layer film is much denser and smoother than that of the SiC/AlN bilayer film. Corrosion behaviors of the NdFeB substrates coated with SiC/AlN and (SiC/AlN)2 films as well as the bare NdFeB substrate are evaluated by potentiodynamic polarization curve tests. It is revealed that the lateral growth structures developed in interfaces are favorable for an enhanced corrosion resistance. Corrosion current densities of the (SiC/AlN)2 coated NdFeB measured in acid, alkali and salt solutions are 2.796  ×  10-9, 3.65  ×  10-6, and 2.912  ×  10-6 A cm-2, respectively, which are much lower than those of the bare NdFeB and the SiC/AlN coated NdFeB.

  12. Mossbauer studies of amorphous Fe73.5Cu1Nb3Si13.5B9 alloy

    DEFF Research Database (Denmark)

    Jiang, Jianzhong

    1996-01-01

    This paper reports a Mossbauer study of amorphous Fe73.5Cu1Nb3Si13.5B9 alloy between 10 and 673 K. The Curie temperature Tc is found to be 620-+ 1 K. The temperature dependence of the reduced average hyperfine field can be explained on the basis of Handrich's model of amorphous ferromagnetism...

  13. Iron solubility in highly boron-doped silicon

    International Nuclear Information System (INIS)

    McHugo, S.A.; McDonald, R.J.; Smith, A.R.; Hurley, D.L.; Weber, E.R.

    1998-01-01

    We have directly measured the solubility of iron in high and low boron-doped silicon using instrumental neutron activation analysis. Iron solubilities were measured at 800, 900, 1000, and 1100thinsp degree C in silicon doped with either 1.5x10 19 or 6.5x10 14 thinspboronthinspatoms/cm 3 . We have measured a greater iron solubility in high boron-doped silicon as compared to low boron-doped silicon, however, the degree of enhancement is lower than anticipated at temperatures >800thinsp degree C. The decreased enhancement is explained by a shift in the iron donor energy level towards the valence band at elevated temperatures. Based on this data, we have calculated the position of the iron donor level in the silicon band gap at elevated temperatures. We incorporate the iron energy level shift in calculations of iron solubility in silicon over a wide range of temperatures and boron-doping levels, providing a means to accurately predict iron segregation between high and low boron-doped silicon. copyright 1998 American Institute of Physics

  14. Comparative Study of Catalytic Oxidation of Ethanol to Acetaldehyde Using Fe(III Dispersed on Sb2O5 Grafted on SiO2 and on Untreated SiO2 Surfaces

    Directory of Open Access Journals (Sweden)

    Benvenutti Edilson V.

    1998-01-01

    Full Text Available Fe(III was supported on Sb(V oxide grafted on the silica gel surface and directly on the silica gel surface using ion-exchange and impregnation processes producing Fe/Sb/SiO2 and Fe/SiO2, respectively. The catalytic conversion of ethanol to acetaldehyde was much more efficient using Fe/Sb/SiO2 than Fe/SiO2 as catalyst. This higher efficiency of the former catalyst takes into account two aspects: a the new phase FeSbO4 formed when Fe/Sb/SiO2 is heat treated and, b it is higher dispersion on the matrix.

  15. Chinese Script vs Plate-Like Precipitation of Beta-Al9Fe2Si2 Phase in an Al-6.5Si-1Fe Alloy

    Science.gov (United States)

    Ferdian, Deni; Josse, Claudie; Nguyen, Patrick; Gey, Nathalie; Ratel-Ramond, Nicolas; de Parseval, Philippe; Thebault, Yannick; Malard, Benoit; Lacaze, Jacques; Salvo, Luc

    2015-07-01

    The microstructure of a high-purity Al-6.5Si-1Fe (wt pct) alloy after solidification at various cooling rates was investigated. In most of the cases, the monoclinic beta-Al9Fe2Si2 phase was observed as long and thin lamellae. However, at a very slow cooling rate, Fe-bearing precipitates with Chinese script morphology appeared together with lamellae. Further analysis showed all these Chinese script precipitates correspond also to the monoclinic beta phase. This finding stresses that differentiating second phases according to their shape may be misleading.

  16. Segregation and Clustering Effects on Complex Boron Redistribution in Strongly Doped Polycrystalline-Silicon Layers

    International Nuclear Information System (INIS)

    Abadli, S.; Mansour, F.

    2011-01-01

    This work deals with the investigation of the complex phenomenon of boron (B) transient enhanced diffusion (TED) in strongly implanted silicon (Si) layers. It concerns the instantaneous influences of the strong B concentrations, the Si layers crystallization, the clustering and the B trapping/segregation during thermal post-implantation annealing. We have used Si thin layers obtained from disilane (Si2H6) by low pressure chemical vapor deposition (LPCVD) and then B implanted with a dose of 4 x 1015 atoms/cm2 at an energy of 15 keV. To avoid long redistributions, thermal annealing was carried out at relatively low-temperatures (700, 750 and 800 'deg'C) for various short-times ranging between 1 and 30 minutes. To investigate the experimental secondary ion mass spectroscopy (SIMS) doping profiles, a redistribution model well adapted to the particular structure of Si-LPCVD layers and to the effects of strong-concentrations has been established. The good adjustment of the simulated profiles with the experimental SIMS profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the TED process in strongly doped Si-LPCVD layers. It was found that boron TED is strongly affected by the simultaneous complex kinetics of clustering, crystallization, trapping and segregation during annealing. The fast formation of small Si-B clusters enhances the B diffusivity whereas the evolution of the clusters and segregation reduce this enhancement. (author)

  17. Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films

    Science.gov (United States)

    Saci, Lynda; Mahamdi, Ramdane; Mansour, Farida; Boucher, Jonathan; Collet, Maéva; Bedel Pereira, Eléna; Temple-Boyer, Pierre

    2011-05-01

    The present paper studies the boron (B) diffusion in nitrogen (N) doped amorphous silicon (a-Si) layer in original bi-layer B-doped polycrystalline silicon (poly-Si)/in-situ N-doped Si layers (NIDOS) thin films deposited by low pressure chemical vapor deposition (LPCVD) technique. The B diffusion in the NIDOS layer was investigated by secondary ion mass spectrometry (SIMS) and Fourier transform infrared spectroscopy (FTIR) analysis. A new extended diffusion model is proposed to fit the SIMS profile of the bi-layer films. This model introduces new terms which take into account the effect of N concentration on the complex diffusion phenomena of B atoms in bi-layer films. SIMS results show that B diffusion does not exceed one third of NIDOS layer thickness after annealing. The reduction of the B diffusion in the NIDOS layer is due to the formation of complex B-N as shown by infrared absorption measurements. Electrical measurements using four-probe and Hall effect techniques show the good conductivity of the B-doped poly-Si layer after annealing treatment.

  18. Magnetostriction of the polycrystalline Fe{sub 80}Al{sub 20} alloy doped with boron

    Energy Technology Data Exchange (ETDEWEB)

    Bormio-Nunes, Cristina, E-mail: cristina@demar.eel.usp.br [Escola de Engenharia de Lorena, Dep. de Eng. de Materiais, Universidade de S.Paulo, Lorena, SP (Brazil); Teodoro dos Santos, Claudio; Botani de Souza Dias, Mateus [Escola de Engenharia de Lorena, Dep. de Eng. de Materiais, Universidade de S.Paulo, Lorena, SP (Brazil); Doerr, Mathias; Granovsky, Sergey; Loewenhaupt, Michael [Institut fuer Festkoerperphysik, TU Dresden, D-01062 Dresden (Germany)

    2012-10-25

    Highlights: Black-Right-Pointing-Pointer Fe{sub 80}Al{sub 20} polycrystalline alloy magnetostriction 40 ppm increased to 80 ppm due to 2% of B doping. Black-Right-Pointing-Pointer B stabilizes {alpha}-FeAl phase and a coexistence of {alpha}-FeAl + Fe{sub 3}Al improves magnetostriction. Black-Right-Pointing-Pointer Presence of Fe{sub 2}B phase causes domain rearrangement revealed by the decrease of the volume magnetostriction. - Abstract: The doping of Fe{sub 80}Al{sub 20} polycrystalline alloy with 2% of boron increased the total magnetostriction twofold compared to a sample without boron. A value close to 80 ppm was achieved at 300 K. The microstructures of the boron-doped alloys show a dendritically solidified matrix with interdendritic {alpha}-FeAl and/or Fe{sub 3}Al and Fe{sub 2}B eutectic between the grains. The XRD analysis reveals an increase in the volume fraction of {alpha}-FeAl and a correspondent decrease of the Fe{sub 3}Al phase volume fraction as the boron content increases. The increase of the volume fraction of this tetragonal Fe{sub 2}B phase in the samples doped with boron causes the decrease of the strong volume magnetostriction that was observed in the alloy without boron. There is some evidence that the improvement of the magnetostriction magnitude due to the addition of boron to the Fe{sub 80}Al{sub 20} alloy could reach the maximal magnetostriction if the 1:1 optimal ratio of the volume fractions of the {alpha}-FeAl and Fe{sub 3}Al phases could be reached.

  19. Magnetron-sputter epitaxy of β-FeSi2(220)/Si(111) and β-FeSi2(431)/Si(001) thin films at elevated temperatures

    International Nuclear Information System (INIS)

    Liu Hongfei; Tan Chengcheh; Chi Dongzhi

    2012-01-01

    β-FeSi 2 thin films have been grown on Si(111) and Si(001) substrates by magnetron-sputter epitaxy at 700 °C. On Si(111), the growth is consistent with the commonly observed orientation of [001]β-FeSi 2 (220)//[1-10]Si(111) having three variants, in-plane rotated 120° with respect to one another. However, on Si(001), under the same growth conditions, the growth is dominated by [-111]β-FeSi 2 (431)//[110]Si(001) with four variants, which is hitherto unknown for growing β-FeSi 2 . Photoelectron spectra reveal negligible differences in the valance-band and Fe2p core-level between β-FeSi 2 grown on Si(111) and Si(001) but an apparent increased Si-oxidization on the surface of β-FeSi 2 /Si(001). This phenomenon is discussed and attributed to the Si-surface termination effect, which also suggests that the Si/Fe ratio on the surface of β-FeSi 2 (431)/Si(001) is larger than that on the surface of β-FeSi 2 (220)/Si(111).

  20. Rod-like β-FeSi2 phase grown on Si (111) substrate

    International Nuclear Information System (INIS)

    Han Ming; Tanaka, Miyoko; Takeguchi, Masaki; Furuya, Kazuo

    2004-01-01

    Pure Fe with coverage of 0.5-2.0 nm was deposited on Si (111) 7x7 surfaces by reactive deposition epitaxy (RDE) in an integrated ultrahigh vacuum (UHV) system. Transmission electron microscopy (TEM) confirmed that the as-deposited epitaxial phase exhibits rod-like and equilateral triangular morphology. The as-deposited phase was identified as c-FeSi 2 by electron diffraction and high-resolution transmission electron microscopy. It was found that there exists lattice distortion in epitaxial c-FeSi 2 phase. Upon annealing at 1073 K, the metastable c-FeSi 2 transforms into equilibrium β-FeSi 2 phase, the latter inherits completely the morphology of c-FeSi 2 phase. Based on RDE and subsequent annealing, a new fabrication technique to grow rod-like semiconducting β-FeSi 2 on a Si substrate has been proposed in the present work

  1. Mechanochemical synthesis of nanocrystalline Fe and Fe–B magnetic alloys

    International Nuclear Information System (INIS)

    Mohammadi, Majid; Ghasemi, Ali; Tavoosi, Majid

    2016-01-01

    Mechanochemical synthesis and magnetic characterization of nanocrystalline Fe and Fe–B magnetic alloys was the goal of this study. In this regard, different Fe_2O_3–B_2O_3 powder mixtures with sufficient amount of CaH_2 were milled in a planetary ball mill in order to produce nanocrystalline Fe, Fe_9_5B_5 and Fe_8_5B_1_5 alloys. The produced samples were characterized using X-ray diffraction (XRD), differential scanning calorimetry (DSC), scanning electron microscopy (SEM) and vibrating sample magnetometer (VSM). The results showed that, nanocrystalline Fe, Fe_9_5B_5 and Fe_8_5B_1_5 alloys can be successfully synthesized by the reduction reaction of Fe_2O_3 and B_2O_3 with CaH_2 during mechanical alloying. The structure of produced Fe_9_5B_5 and Fe_8_5B_1_5 alloys was a combination of Fe and Fe_2B phases with average crystallite sizes of about 15 and 10 nm, respectively. The produced nanocrystalline alloys exhibited soft magnetic properties with the coercivity and saturation of magnetization in the range of 170–240 Oe and 9–28 emu/g, respectively. Increasing the boron content has a destructive effect on soft magnetic properties of Fe–B alloys. - Highlights: • We study the mechanochemical synthesis of nanocrystalline boron, Fe and Fe–B alloys. • We study the reduction reaction of B_2O_3–CaH_2 during milling. • We study the reduction reaction of Fe_2O_3–CaH_2 during milling. • We study the reduction reaction of Fe_2O_3–B_2O_3–CaH_2 during milling. • We study the effect of B on magnetic properties of nanocrystalline Fe–B alloys.

  2. Simulation of a silicon neutron detector coated with TiB2 absorber

    International Nuclear Information System (INIS)

    Krapohl, D; Nilsson, H-E; Petersson, S; Slavicek, T; Thungström, G; Pospisil, S

    2012-01-01

    Neutron radiation cannot be directly detected in semiconductor detectors and therefore needs converter layers. Planar clean-room processing can be used in the manufacturing process of semiconductor detectors with metal layers to produce a cost-effective device. We used the Geant4 Monte-Carlo toolkit to simulate the performance of a semiconductor neutron detector. A silicon photo-diode was coated with vapour deposited titanium, aluminium thin films and a titaniumdiboride (TiB 2 ) neutron absorber layer. The neutron capture reaction 10B(n, alpha)7Li is taken advantage of to create charged particles that can be counted. Boron-10 has a natural abundance of about SI 19.8%. The emitted alpha particles are absorbed in the underlying silicon detector. We varied the thickness of the converter layer and ran the simulation with a thermal neutron source in order to find the best efficiency of the TiB 2 converter layer and optimize the clean room process.

  3. Spectrophotometric determination of trace and ultratrace levels of boron in silicon and chlorosilane samples

    International Nuclear Information System (INIS)

    Chen, J.S.; Lin, H.M.; Yang, M.H.

    1991-01-01

    Spectrophotometric methods for the determination of boron in the low μg/g and ng/g range in high-purity silicon and dichloro- and trichlorosilanes were investigated in detail. The procedures established involve dissolution of silicon samples and the hydrolyzed products of chlorosilane samples in hydrofluoric acid-containing reagents followed by evaporation of the silicon matrix as H 2 SiF 6 . The boron retained in the treated sample solution was then determined by a spectrophotometric method using carminic acid as a chromatic reagent. Special effort has been paid to the control of the analytical blank and reproducible determination of boron. The results indicate that addition of mannitol and proper control of the evaporation process are effective in preventing volatilization of boron during the evaporation of silicon matrix and can thus attain high recovery of boron and reproducible analysis. Through meticulous control of the analytical blank and experimental conditions, the limit of detection for boron determination with the established method can be as low as ng/g levels. Application of the methods to the determination of boron in various stages of purification of silicon and trichlorosilane as well as in borophosphosilicate film was conducted. (orig.)

  4. Controlling the reaction between boron-containing sealing glass and a lanthanum-containing cathode by adding Nb2O5

    Science.gov (United States)

    Zhao, Dandan; Fang, Lihua; Tang, Dian; Zhang, Teng

    2016-09-01

    In solid oxide fuel cell (SOFC) stacks, the volatile boron species present in the sealing glass often react with the lanthanum-containing cathode, degrading the activity of the cathode (this phenomenon is known as boron poisoning). In this work, we report that this detrimental reaction can be effectively reduced by doping bismuth-containing borosilicate sealing glass-ceramic with a niobium dopant. The addition of Nb2O5 not only condenses the [SiO4] structural units in the glass network, but also promotes the conversion of [BO3] to [BO4]. Moreover, the Nb2O5 dopant enhances the formation of boron-containing phases (Ca3B2O6 and CaB2Si2O8), which significantly reduces the volatility of boron compounds in the sealing glass, suppressing the formation of LaBO3 in the reaction couple between the glass and the cathode. The reported results provide a new approach to solve the problem of boron poisoning.

  5. Superconducting state in (W, Ta)5SiB2

    Science.gov (United States)

    Fukuma, M.; Kawashima, K.; Akimitsu, J.

    We characterize the superconducting state in a boro-silicide (W, Ta)5SiB2, with Tc of 6.5 K by means of magnetization, electrical resistivity, and specific heat measurements. As x increased, the transition temperature Tc abruptly enhances from 5.8 to 6.5 K. The magnetization versus magnetic field (M-H) curve indicated that (W, Ta)5SiB2 was a conventional type-II superconductor. The estimated lower critical field Hc1(0) and upper critical field Hc2(T) are about 121 Oe and 14.7 kOe, respectively. The penetration depth λ(0) and coherence length ξ(0) are calculated to be approximately 369 and 14.9 nm, respectively, using Ginzburg-Landau (GL) equations. Specific heat data shows the superconductivity in W4.5Ta0.5SiB2 belongs to a week-coupling BCS superconductor. Finally, we discuss the increasing of Tc in of (W, Ta)5SiB2 system.

  6. Nuclear Magnetic Resonance (NMR) study of the nanocrystalline alloy Fe73.5 Cu1 Nb3 Si13.5 B9

    International Nuclear Information System (INIS)

    Aliaga-Guerra, D.; Iannarella, L.; Fontes, M.B.; Guimaraes, A.P.; Skorvanek, I.

    1994-05-01

    Nanocrystalline Fe 73.5 Cu 1 Nb 3 Si 13.5 B 9 alloys were studied with spin echo NMR at 4.2 K, from 15 to 100 MHz. Several lines are observed, with signals from domains and domain walls. Signals at 50-90 MHz appear to arise from 93 Nb nuclei in the amorphous matrix and in the interface of the crystallites. (author). 5 refs, 3 figs

  7. Isothermal section of the Ti-Si-B system at 1250 ° C in the Ti-TiSi2-TiB2 region

    OpenAIRE

    Ramos, Alfeu Saraiva; Baldan, Renato; Nunes, Carlos Angelo; Coelho, Gilberto Carvalho; Suzuki, Paulo Atsushi; Rodrigues, Geovani

    2013-01-01

    A partial isothermal section (Ti-TiSi2-TiB2 region) of the ternary Ti-Si-B system at 1250 ° C was determined from heat-treated alloys prepared via arc melting. Microstructural characterization has been carried out through scanning electron microscopy (SEM), x-ray diffraction (xRD) and wavelength dispersive spectrometry (WDS). The results have shown the stability of the near stoichiometric Ti6Si2B phase and a negligible solubility of boron in the Ti-silicides as well as of Si in the Ti-borides...

  8. Very high laser-damage threshold of polymer-derived Si(B)CN-carbon nanotube composite coatings.

    Science.gov (United States)

    Bhandavat, R; Feldman, A; Cromer, C; Lehman, J; Singh, G

    2013-04-10

    We study the laser irradiance behavior and resulting structural evolution of polymer-derived silicon-boron-carbonitride (Si(B)CN) functionalized multiwall carbon nanotube (MWCNT) composite spray coatings on copper substrate. We report a damage threshold value of 15 kWcm(-2) and an optical absorbance of 0.97 after irradiation. This is an order of magnitude improvement over MWCNT (1.4 kWcm(-2), 0.76), SWCNT (0.8 kWcm(-2), 0.65) and carbon paint (0.1 kWcm(-2), 0.87) coatings previously tested at 10.6 μm (2.5 kW CO2 laser) exposure. Electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy suggests partial oxidation of Si(B)CN forming a stable protective SiO2 phase upon irradiation.

  9. All-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayers fabricated by Sn-induced low-temperature epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kawano, M.; Ikawa, M.; Arima, K.; Yamada, S.; Kanashima, T.; Hamaya, K., E-mail: hamaya@ee.es.osaka-u.ac.jp [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka 560-8531 (Japan)

    2016-01-28

    We demonstrate low-temperature growth of all-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayer structures by developing Sn-induced surfactant-mediated molecular beam epitaxy (SMBE) of Ge on Co{sub 2}FeSi. Despite the growth of a semiconductor on a metal, we verify that the inserted Sn monolayers between Ge and Co{sub 2}FeSi enable to promote the 2D epitaxial growth of Ge up to 5 nm at a T{sub G} of 250 °C. An understanding of the mechanism of the Sn-induced SMBE leads to the achievement of all-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayer structures with spin-valve-like magnetization reversals. This study will open a way for vertical-type and high-performance Ge-based spintronics devices.

  10. Study on the Formation of Reaction Phase to Si Addition in Boron Steel Hot-Dipped in Al–7Ni Alloy

    Directory of Open Access Journals (Sweden)

    Jung-Gil Yun

    2017-11-01

    Full Text Available In order to reduce the intermetallic compounds formed during the application of an Al–7Ni wt % hot-dip multifunctional coating on boron steel, developed for Tailor Welded Blanks (TWB and hot stamping, 2–6 wt % Si was added to the coating to change the reaction layer. The coating was run at 690 °C for 120 s. Al9FeNi phases were formed on the steel interface, Fe2Al5 was formed on the steel, FeAl3 was generated between the existing layers, and flake-type Al2Fe3Si3 was formed in the Fe2Al5 phase, depending on the Si content. In addition, as Si was added to the coating, the thickness of the Fe2Al5 phase decreased and the thickness of the Al9FeNi phase and Al2Fe3Si3 increased. The decrease in the thickness of the Fe2Al5 phase was mainly due to the effect of the Si solid solution and the Al2Fe3Si3 formation in the Fe2Al5 phase. The reason for the growth of Al9FeNi is that the higher the Si content in the coating, the more the erosion of the interface of the steel material due to the coating solution. Therefore, the outflow of Fe into the coating liquid increased.

  11. Fabrication of Fe-6.5wt%Si Ribbons by Melt Spinning Method on Large Scale

    Directory of Open Access Journals (Sweden)

    Y. F. Liang

    2015-01-01

    Full Text Available Melt spinning method has been widely applied for fabrication of Fe-based amorphous/nanocrystalline ribbons in industry. Compared with Fe-based amorphous/nanocrystalline alloys, Fe-6.5wt%Si high silicon steel is of low cost and has comparable excellent soft magnetic properties. Due to higher melting point and absence of supercooled liquid region, fabrication of Fe-6.5wt%Si ribbons is very hard and is only on lab scale. In this paper, we report that large scale fabrication of Fe-6.5wt%Si ribbons was successful and microstructures, ordered structures, and mechanical and soft magnetic properties of the ribbons were investigated. Due to rapid solidification rate, the ribbons were of ultrafine grains, and low degree of order and exhibited some extent of bending and tensile ductility. After heat treatment, excellent soft magnetic properties were obtained. Due to near-zero magnetostriction, the ribbons are promising to be used in electric devices with high frequencies where low noises are required.

  12. Effect of hydridation on structure of amorphous and amorphous-crystalline Fe40Ni40B20 and Co70Fe5Si15B10 bands

    International Nuclear Information System (INIS)

    Il'inskij, A.G.; Brovko, A.P.; Zelinskaya, G.M.; Kosenko, N.S.; Khristenko, T.M.; Kobzenko, G.F.; Shkola, A.A.

    1988-01-01

    The structure of amorphous and amorphous-crystaliline Fe 40 Ni 40 B 20 and Co 70 Fe 5 Si-1 5 B 10 alloys, exposed to hydridation at different temperatures, is studied by X-ray diffraction technique. The presence of crystalline constituent in amorphous bands was determined on DRON-3 device and by method of small-angle scattering. The experimental data obtained verify, that hydridation does not only prevent the formation of crystalline phases at annealing, but leads, as well, to disappearance of band crystalline constituent in case of its presence

  13. Particle track etch method for analysis of boron in silicon using 10B(n,α)7Li reaction

    International Nuclear Information System (INIS)

    Chakarvarti, S.K.; Nagpaul, K.K.

    1980-01-01

    Boron bulk doped p-type (111) silicon thin wafers of different resistivities (1 to 100 ohm-cm +- 20%) have been analysed for boron using cellulose nitrate-Daicel and red dyed LR-115 type II films as detectors of alpha particles from 10 B(n,α) 7 Li reaction. The two detectors measure the same value of boron (approximately 0.1 ppm) in 1 ohm-cm silicon samples and agree closely with the four-point probe electrical resistivity measurement results whereas large discrepancies are observed in case of samples with resistivity > 1 ohm-cm (B concentration 1 ohm-cm. (author)

  14. Synthesis, structure and magnetic properties of Fe-Gd nanocapsules coated with B2O3/H3BO3 and Fe3BO5+GdBO3

    International Nuclear Information System (INIS)

    Si, P.Z.; Brueck, E.; Zhang, Z.D.; Tegus, O.; Buschow, K.H.J.; Zhang, W.S.; Klaasse, J.C.P.; Boer, F.R. de

    2004-01-01

    Nanocapsules consisting of B 2 O 3 /H 3 BO 3 encapsulating Fe-Gd cores have been synthesized by an arc-discharge process using metal-boron alloys as cathode. Most of the nanocapsules have a well-constructed shell/core structure with a uniform B 2 O 3 /H 3 BO 3 shell. Heat-treatment induces reactions between the shell and the core, resulting in the formation of a Fe 3 BO 5 +GdBO 3 matrix embedded with Fe nanoparticles, reduction of the metallic-core size and decrease of the blocking temperature T B . Above T B , the magnetization curves plotted vs. H/T overlap and show zero coercivity. Below T B , the coercivity shows a linear dependence when plotted vs. T 1/2 . However, the coercivity-T 1/2 curve below 60 K has a different slope from that above 60 K, indicating the existence of two different magnetic phases in the nanocapsules. Different from bulk Fe 3 BO 5 , nanoscale Fe 3 BO 5 particles have a lower transition temperature to the weak-ferromagnetic state, and magnetic hysteresis is absent due to size effects

  15. Structural and magnetic properties of Fe{sub 76}P{sub 5}(Si{sub 0.3}B{sub 0.5}C{sub 0.2}){sub 19} amorphous alloy

    Energy Technology Data Exchange (ETDEWEB)

    Lavorato, G.C. [INTECIN (FIUBA-CONICET), Paseo Colon 850, Capital Federal (Argentina); Dipartimento di Chimica IFM and NIS, Universita di Torino, Torino (Italy); Fiore, G. [Dipartimento di Chimica IFM and NIS, Universita di Torino, Torino (Italy); Tiberto, P. [INRIM, Electromagnetism Division, Torino (Italy); Baricco, M. [Dipartimento di Chimica IFM and NIS, Universita di Torino, Torino (Italy); Sirkin, H. [INTECIN (FIUBA-CONICET), Paseo Colon 850, Capital Federal (Argentina); Moya, J.A., E-mail: jmoya.fi.uba@gmail.com [GIM - IESIING, Universidad Catolica de Salta, INTECIN (UBA-CONICET) (Argentina)

    2012-09-25

    Highlights: Black-Right-Pointing-Pointer Fe{sub 76}P{sub 5}(Si{sub 0.3}B{sub 0.5}C{sub 0.2}){sub 19} amorphous alloy in ribbons and 1 mm and 2 mm rod samples. Black-Right-Pointing-Pointer Good glass forming ability with {Delta}T = 50 K and {gamma} = 0.37 and off-eutectic composition. Black-Right-Pointing-Pointer Good soft magnetic properties with magnetization saturation of 1.44 T. Black-Right-Pointing-Pointer Geometrical factors are the primary causes of magnetic losses in frequencies above 10 Hz. - Abstract: Recently, bulk amorphous alloys were produced in the Fe-B-Si-P-C system with high glass forming ability, excellent magnetic properties and the advantage of containing no expensive glass-forming elements, such as Ga, Y, Cr or Nb, having, therefore, a good perspective of commercial applications. In the present work, the Fe{sub 76}P{sub 5}(Si{sub 0.3}B{sub 0.5}C{sub 0.2}){sub 19} amorphous alloy prepared by two quenching techniques has been studied. Amorphous ribbons of about 40 {mu}m thick were obtained by planar-flow casting together with cylinders having 1 and 2 mm diameter produced by copper mold injection casting. All the samples appear fully amorphous after X-ray diffraction analysis. A comprehensive set of thermal data (glass, crystallization, melting and liquidus temperatures) were obtained as well as a description of the melting and solidification processes. Mechanical microhardness tests showed that the samples have a hardness of 9.7 {+-} 0.3 GPa. Good soft-magnetic properties were obtained, including a high magnetization of 1.44 T and a low coercivity (4.5 A/m for ribbons and 7.5 A/m in the case of 1 mm rod samples, both in as-cast state). Thermomagnetic studies showed a Curie temperature around 665 K and the precipitation of new magnetic phases upon temperatures of 1000 K. Furthermore, the frequency dependence of magnetic losses at a fixed peak induction was studied. The results suggest the occurrence of a fine magnetic domain structure in bulk

  16. Exploring high-pressure FeB{sub 2}: Structural and electronic properties predictions

    Energy Technology Data Exchange (ETDEWEB)

    Harran, Ismail [School of Physical Science and Technology, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu, 610031 (China); Al Fashir University (Sudan); Wang, Hongyan [School of Physical Science and Technology, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu, 610031 (China); Chen, Yuanzheng, E-mail: cyz@calypso.org.cn [School of Physical Science and Technology, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu, 610031 (China); Jia, Mingzhen [School of Physical Science and Technology, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu, 610031 (China); Wu, Nannan [School of Mathematics, Physics and Biological Engineering, Inner Mongolia University of Science & Technology, Baotou, 014010 (China)

    2016-09-05

    The high pressure (HP) structural phase of FeB{sub 2} compound is investigated by using first-principles crystal structure prediction based on the CALYPSO technique. A thermodynamically stable phase of FeB{sub 2} with space group Imma is predicted at pressure above 225 GPa, which is characterized by a layered orthorhombic structure containing puckered graphite-like boron layers. Its electronic and mechanical properties are identified and analyzed. The feature of band structures favors the occurrence of superconductivity, whereas, the calculated Pugh's ratio reveals that the HP Imma structure exhibits ductile mechanical property. - Highlights: • The high pressure structural phase of FeB{sub 2} compound is firstly investigated by the CALYPSO technique. • A thermodynamically stable Imma phase of FeB{sub 2} is predicted at pressure above 225 GPa. • The Imma structure is characterized by a 2D boron network containing puckered graphite-like boron layers. • The band feature of Imma structure favors the occurrence of superconductivity. • The calculated Pugh's ratio suggests that the Imma structure exhibits ductile mechanical property.

  17. Magnetic and thermal behaviour of the amorphous ferromagnet Fe79B16Si5

    International Nuclear Information System (INIS)

    Shaisha, E.E.; Bahgat, A.A.

    1985-01-01

    Spin waves in the amorphous ferromagnet Fe 79 B 16 Si 5 are studied by Moessbauer effect spectroscopy. The magnetic hyperfine field (MHF) is measured at the Fe sites of such a ferromagnet, which exhibits a temperature dependence of the form, H(T)/H(0) = (1 - BT/sup 3/2/ - CT/sup 5/2/), indicative of spin wave excitations in amorphous ferromagnets. The T/sup 3/2/ behaviour and the distribution of the exchange interactions are studied in detail as a function of the MHF. The spin wave excitations constant B/sub 3/2/ = BT/sub C//sup 3/2/ = 0.3 +- 0.05 and C/sub 5/2/ = CT/sub C//sup 5/2/ = 0.3 +- 0.05,Are obtained by fitting the experimental data, and where T/sub C/ = 670 K. The results sh=ow that the contribution of C/sub 5/2/ is extremely effective above 124 K, while the ratio C/sub 5/2//C/sub 3/2/ = 1.0 indicates that the present magnetic interaction is of long range order character. On the other hand, fluctuations of the exchange interaction constant are found to decrease with increasing temperature. Some information regarding the directions of the magnetic moments are obtained during the study of the magnetic anisotropy course. The values of the Einstein and Debye temperatures as measured from the thermal shift results are theta/sub E/ = 250 K and theta/sub D/ = 350 K,And from the Moessbauer factor measurements theta/sub E/ = 165 K and theta/sub D/ = 285 K. (autho=r)

  18. Investigation of charges carrier density in phosphorus and boron doped SiNx:H layers for crystalline silicon solar cells

    International Nuclear Information System (INIS)

    Paviet-Salomon, B.; Gall, S.; Slaoui, A.

    2013-01-01

    Highlights: ► We investigate the properties of phosphorus and boron-doped silicon nitride films. ► Phosphorus-doped layers yield higher lifetimes than undoped ones. ► The fixed charges density decreases when increasing the films phosphorus content. ► Boron-doped films feature very low lifetimes. ► These doped layers are of particular interest for crystalline silicon solar cells. -- Abstract: Dielectric layers are of major importance in crystalline silicon solar cells processing, especially as anti-reflection coatings and for surface passivation purposes. In this paper we investigate the fixed charge densities (Q fix ) and the effective lifetimes (τ eff ) of phosphorus (P) and boron (B) doped silicon nitride layers deposited by plasma-enhanced chemical vapour deposition. P-doped layers exhibit a higher τ eff than standard undoped layers. In contrast, B-doped layers exhibit lower τ eff . A strong Q fix decrease is to be seen when increasing the P content within the film. Based on numerical simulations we also demonstrate that the passivation obtained with P- and B-doped layers are limited by the interface states rather than by the fixed charges

  19. Microstructure and properties of MoSi2-MoB and MoSi2-Mo5Si3 molybdenum silicides

    International Nuclear Information System (INIS)

    Schneibel, J.H.; Sekhar, J.A.

    2003-01-01

    MoSi 2 -based intermetallics containing different volume fractions of MoB or Mo 5 Si 3 were fabricated by hot-pressing MoSi 2 , MoB, and Mo 5 Si 3 powders in vacuum. Both classes of alloys contained approximately 5 vol.% of dispersed silica phase. Additions of MoB or Mo 5 Si 3 caused the average grain size to decrease. The decrease in the grain size was typically accompanied by an increase in flexure strength, a decrease in the room temperature fracture toughness, and a decrease in the hot strength (compressive creep strength) measured around 1200 deg. C, except when the Mo 5 Si 3 effectively became the major phase. Oxidation measurements on the two classes of alloys were carried out in air. Both classes of alloys were protected from oxidation by an in-situ adherent scale that formed on exposure to high temperature. The scale, although not analyzed in detail, is commonly recognized in MoSi 2 containing materials as consisting mostly of SiO 2 . The MoB containing materials showed an increase in the scale thickness and the cyclic oxidation rate at 1400 deg. C when compared with pure MoSi 2 . However, in contrast with the pure MoSi 2 material, oxidation at 1400 deg. C began with a weight loss followed by a weight gain and the formation of the protective silica layer. The Mo 5 Si 3 containing materials experienced substantial initial weight losses followed by regions of small weight changes. Overall, the MoB and Mo 5 Si 3 additions to MoSi 2 tended to be detrimental for the mechanical and oxidative properties

  20. Irradiation Effect of Argon Ion on Interfacial Structure Fe(2nm/Si(tsi=0.5-2 nm Multilayer thin Film

    Directory of Open Access Journals (Sweden)

    S. Purwanto

    2010-04-01

    Full Text Available Investigation includes formation of interfacial structure of Fe(2nm/Si(tSi= 0.5-2 nm multilayer thin film and the behavior of antiferromagnetic coupling between Fe layers due to Argon ion irradiation was investigated. [Fe(2nm/Si]30 multilayers (MLs with a thickness of Si spacer 0.5 - 2 nanometer were prepared on n-type (100 Si substrate by the helicon plasma sputtering method. Irradiation were performed using 400keV Ar ion to investigate the behavior of magnetic properties of the Fe/Si MLs. The magnetization measurements of Fe/Si MLs after 400keV Ar ion irradiation show the degradation of antiferromagnetic behavior of Fe layers depend on the ion doses. The Magnetoresistance (MR measurements using by Four Point Probe (FPP method also confirm that MR ratio decrease after ion irradiation. X-ray diffraction (XRD patterns indicate that the intensity of a satellite peak induced by a superlattice structure does not change within the range of ion dose. These results imply that the surface of interface structures after ion irradiation become rough although the layer structures are maintained. Therefore, it is considered that the MR properties of Fe/Si MLs also are due to the metallic superlattice structures such as Fe/Cr and Co/Cu MLs.

  1. Stability of the high pressure phase Fe3S2 up to Earth's core pressures in the Fe-S-O and the Fe-S-Si systems

    Science.gov (United States)

    Zurkowski, C. C.; Chidester, B.; Davis, A.; Brauser, N.; Greenberg, E.; Prakapenka, V. B.; Campbell, A.

    2017-12-01

    Earth's core is comprised of an iron-nickel alloy that contains 5-15% of a light element component. The abundance and alloying capability of sulfur, silicon and oxygen in the bulk Earth make them important core alloy candidates; therefore, the high-pressure phase equilibria of the Fe-S-O and Fe-S-Si systems are relevant for understanding the possible chemistry of Earth's core. Previously, a Fe3S2 phase was recognized as a low-pressure intermediate phase in the Fe-FeS system that is stable from 14-21 GPa, but the structure of this phase has not been resolved. We report in-situ XRD and chemical analysis of recovered samples to further examine the stability and structure of Fe3S2 as it coexists with other phases in the Fe-S-O and Fe-S-Si systems. In situ high P-T synchrotron XRD experiments were conducted in the laser-heated diamond anvil cell to determine the equilibrium phases in Fe75S7O18 and Fe80S5Si15 compositions between 30 and 174 GPa and up to 3000 K. In the S,O-rich samples, an orthorhombic Fe3S2 phase coexists with hcp-Fe, Fe3S and FeO and undergoes two monoclinic distortions between 60 and 174 GPa. In the S,Si-rich samples, the orthorhombic Fe3S2 phase was observed up to 115 GPa. With increasing pressure, the Fe3S2 phase becomes stable to higher temperatures in both compositions, suggesting possible Fe3(S,O)2 or Fe3(S,Si)2 solid solutions. SEM analysis of a laser heated Fe75S7O18 sample recovered from 40 GPa and 1450 K confirms a Fe3(S,O)2 phase with O dissolved into the structure. Based on the current melting data in the Fe-S-O and Fe-S-Si systems, the Fe3(S,O)2 stability field intersects the solidus in the outer core and could be a possible liquidus phase in Fe,S,O-rich planetary cores, whereas Fe3S is the stable sulfide at outer core pressures in Fe,S,Si-rich systems.

  2. 57Fe Moessbauer study of amorphous and nanocrystalline Fe73.5Nb3Cu1Si13.5B9 after neutron irradiation

    International Nuclear Information System (INIS)

    Miglierini, M.; Sitek, J.; Szasz, Z.; Vitazek, K.

    1994-01-01

    57 Fe Moessbauer spectroscopy is used to study neutron irradiation induced changes in the short-range order of Fe 73.5 Nb 3 Cu 1 Si 13.5 B 9 alloy. The samples are investigated in both amorphous and nanocrystalline states. Neutron irradiation leads to an increase of the standard deviation of a hyperfine field distribution (HFD), implying rearrangement of the atoms towards disordering. Simultaneously, changes in the average value of the hyperfine field and a net magnetic moment position occur as a consequence of a spin reorientation, atom mixing and microscopic stress centres which are introduced by neutron irradiation. (orig.)

  3. A room-temperature-operated Si LED with β-FeSi2 nanocrystals in the active layer: μW emission power at 1.5 μm

    Science.gov (United States)

    Shevlyagin, A. V.; Goroshko, D. L.; Chusovitin, E. A.; Balagan, S. A.; Dotsenko, S. A.; Galkin, K. N.; Galkin, N. G.; Shamirzaev, T. S.; Gutakovskii, A. K.; Latyshev, A. V.; Iinuma, M.; Terai, Y.

    2017-03-01

    This article describes the development of an Si-based light-emitting diode with β-FeSi2 nanocrystals embedded in the active layer. Favorable epitaxial conditions allow us to obtain a direct band gap type-I band alignment Si/β-FeSi2 nanocrystals/Si heterostructure with optical transition at a wavelength range of 1500-1550 nm at room temperature. Transmission electron microscopy data reveal strained, defect-free β-FeSi2 nanocrystals of diameter 6 and 25 nm embedded in the Si matrix. Intense electroluminescence was observed at a pumping current density as low as 0.7 A/cm2. The device reached an optical emission power of up to 25 μW at 9 A/cm2 with an external quantum efficiency of 0.009%. Watt-Ampere characteristic linearity suggests that the optical power margin of the light-emitting diode has not been exhausted. Band structure calculations explain the luminescence as being mainly due to radiative recombination in the large β-FeSi2 nanocrystals resulting from the realization of an indirect-to-direct band gap electronic configuration transformation arising from a favorable deformation of nanocrystals. The direct band gap structure and the measured short decay time of the luminescence of several tens of ns give rise to a fast operation speed for the device. Thus a method for developing a silicon-based photonic integrated circuit, combining complementary metal-oxide-semiconductor technology functionality and near-infrared light emission, is reported here.

  4. Reactions between monolayer Fe and Si(001) surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Hasegawa, M; Kobayashi, N; Hayashi, N [Electrotechnical Lab., Tsukuba, Ibaraki (Japan)

    1997-03-01

    Reactions between 1.5 monolayer(ML) Fe deposited on Si(001)-2x1 and -dihydride surfaces were studied in situ by reflection high-energy electron diffraction and time-of-flight ion scattering spectrometry with the use of 25 keV H ions. The reactions between Fe and Si which were successively deposited on Si(001)-dihydride surface were also studied. After the room temperature deposition Fe reacted with Si(001)-2x1 substrate resulting in the formation of polycrystalline Fe5Si3. By annealing to 560-650degC composite heteroepitaxial layer of both type A and type B {beta}-FeSi2 was formed. On the dihydride surface polycrystalline Fe was observed after 1.5ML Fe deposition at room temperature, and reaction between Fe and Si(001)-dihydride surface is not likely at room temperature. We observed 3D rough surface when we deposited only Fe layer on the dihydride surface and annealed above 700degC. The hydrogen termination of Si(001) surface prevents the deposited Fe from diffusing into the substrate below 500degC, however the annealing above 710degC leads to the diffusion. We obtained 2D ordered surface, which showed 3x3 RHEED pattern as referenced to the primitive unreconstructed Si(001) surface net, when we deposited 2.5ML Fe and 5.8ML Si successively onto Si(001)-dihydride surface and annealed to 470degC. (author)

  5. Axial channeling of boron ions into silicon

    International Nuclear Information System (INIS)

    La Ferla, A.; Galvagno, G.; Raineri, V.; Setola, R.; Rimini, E.; Carnera, A.; Gasparotto, A.

    1992-01-01

    Channeling boron implants were performed into (100) and (110) silicon substrates in the energy range 80-700 keV. The dose ranged between 3.5x10 11 and 1x10 15 atoms/cm 2 . The axial channeling concentration profiles of implanted B + were compared with that obtained for incidence along the random direction of the crystal and with that obtained by implantation in amorphous silicon. The electrical and chemical boron distributions were obtained by spreading resistance and secondary ion mass spectrometry measurements, respectively. The inelastic stopping power, S c , was extracted from the experimental maximum ranges for the [100] and [110] axis. The energy dependence of the electronic stopping power is given by S e = KE p with p [100] = 0.469±0.010 and p [110] = 0.554±0.004. Simulations obtained by the MARLOWE code, using the Oen-Robinson impact parameter dependent formula, for the electronic energy loss reproduce quite well the experimental depth profiles. (orig.)

  6. Note: Resonance magnetoelectric interactions in laminate of FeCuNbSiB and multilayer piezoelectric stack for magnetic sensor

    Science.gov (United States)

    Li, Jianqiang; Lu, Caijiang; Xu, Changbao; Zhong, Ming

    2015-09-01

    This paper develops a simple miniature magnetoelectric (ME) laminate FeCuNbSiB/PZT-stack made up of magnetostrictive Fe73.5Cu1Nb3Si13.5B9 (FeCuNbSiB) foils and piezoelectric Pb(Zr, Ti)O3 (PZT) multilayer stack vibrator. Resonant ME interactions of FeCuNbSiB/PZT-stack with different layers of FeCuNbSiB foil (L) are investigated in detail. The experimental results show that the ME voltage coefficient reaches maximum value of 141.5 (V/cm Oe) for FeCuNbSiB/PZT-stack with L = 6. The AC-magnetic sensitivities can reach 524.29 mV/Oe and 1.8 mV/Oe under resonance 91.6 kHz and off-resonance 1 kHz, respectively. The FeCuNbSiB/PZT-stack can distinguish small dc-magnetic field of ˜9 nT. The results indicate that the proposed ME composites are very promising for the cheap room-temperature magnetic field sensing technology.

  7. A new high-pressure phase of Fe2SiO4 and the relationship between spin and structural transitions

    Science.gov (United States)

    Yamanaka, T.; Kyono, A.; Nakamoto, Y.; Kharlamova, S. A.; Struzhkin, V. V.; Gramsch, S.; Mao, H.; Hemley, R. J.

    2013-12-01

    O4. This new high-pressure phase reversibly transforms to the spinel structure under decompression. A Martensitic transformation of spinel slabs with translation vector [1/8 1/8 1/8] generates the I-Fe2SiO4 structure. The transition is induced by atomic displacements in the spinel structure, which generates the orthorhombic distortion resulting in I-Fe2SiO4 arrangement. A topotactic relation between spinel and I-Fe2SiO4 is suggested as the origin of this phase transition: Fe2SiO4 spinel at 34.8 GPa, Fd m, z = 8, a(spinel)= 7.894 Å I-Fe2SiO4 at 54.6 GPa, Imma,, z = 4, a= 5.543(1)Å, b=6.032(4)Å, c= 7.201(5)Å a = b = d(spnel 110) = 0.707107a (spinel) c= c(spinel) Compression along the [001] direction of the spinel structure and simultaneous elongation along the [110] direction results in the I-Fe2SiO4 arrangement. This transition is induced by the 20% shrinkage of ionic radius of Fe2+in the octahedral site at the low spin state.

  8. Effect of rapid solidification on the microstructure and mechanical properties of hot-pressed Al-20Si-5Fe alloys

    International Nuclear Information System (INIS)

    Rajabi, M.; Vahidi, M.; Simchi, A.; Davami, P.

    2009-01-01

    The aim of this work is to study the effect of cooling rate and subsequent hot consolidation on the microstructural features and mechanical strength of Al-20Si-5Fe-2X (X = Cu, Ni and Cr) alloys. Powder and ribbons were produced by gas atomization and melt spinning processes at two different cooling rates of 1 x 10 5 K/s and 5 x 10 7 K/s. The microstructure of the products was examined using optical microscopy, scanning electron microscopy, transmission electron microscopy, and X-ray diffraction. The particles were consolidated by hot pressing at 400 deg. C/250 MPa/1 h under a high purity argon atmosphere and the microstructure, hardness and compressive strength of the compacts were evaluated. Results showed a profound effect of the cooling rate, consolidation stage, and transition metals on the microstructure and mechanical strength of Al-20Si-5Fe alloys. While microstructural refining was obtained at both cooling rates, the microstructure of the atomized powder exhibited the formation of fine primary silicon (∼ 1 μm), eutectic Al-Si phase with eutectic spacing of ∼ 300 nm, and δ-iron intermetallic. Supersaturated Al matrix containing 5-7 at.% silicon and nanometric Si precipitates (20-40 nm) were determined in the microstructure of the melt-spun ribbons. The hot consolidation resulted in coarsening of Si particles in the atomized particles, and precipitation of Si and Fe-containing intermetallics from the supersaturated Al matrix in the ribbons. The consolidated ribbons exhibited higher mechanical strength compared to the atomized powders, particularly at elevated temperatures. The positive influence of the transition metals on the thermal stability of the Al-20Si-5Fe alloy was noticed, particularly in the Ni-containing alloy.

  9. Activation behavior of boron implanted poly-Si on glass substrate

    International Nuclear Information System (INIS)

    Furuta, M.; Shimamura, K.; Tsubokawa, H.; Tokushige, K.; Furuta, H.; Hirao, T.

    2010-01-01

    The activation behavior of boron (B) implanted poly-Si films on glass substrates has been investigated. The effect of B dose and annealing temperature on crystal defects and electrical properties of the films were evaluated by Raman spectroscopy and Hall measurement. It was found that the maximum activation ratio of the film with B dose of 1 x 10 15 cm -2 was obtained when Raman peak associated with disordered amorphous silicon disappeared. However, reverse anneal was observed in the film when the annealing temperature further increased. The results from secondary ion mass spectrometry and Hall measurement revealed that B segregation at the top and bottom interface and deactivation of B substitutional occurred simultaneously in the high-dose specimens when the annealing temperature increased from 600 to 750 o C.

  10. Photoelectrochemical Characterization of Sprayed α-Fe2O3 Thin Films: Influence of Si Doping and SnO2 Interfacial Layer

    Directory of Open Access Journals (Sweden)

    Yongqi Liang

    2008-01-01

    Full Text Available α-Fe2O3 thin film photoanodes for solar water splitting were prepared by spray pyrolysis of Fe(AcAc3. The donor density in the Fe2O3 films could be tuned between 1017–1020 cm-3 by doping with silicon. By depositing a 5 nm SnO2 interfacial layer between the Fe2O3 films and the transparent conducting substrates, both the reproducibility and the photocurrent can be enhanced. The effects of Si doping and the presence of the SnO2 interfacial layer were systematically studied. The highest photoresponse is obtained for Fe2O3 doped with 0.2% Si, resulting in a photocurrent of 0.37 mA/cm2 at 1.23 VRHE in a 1.0 M KOH solution under 80 mW/cm2 AM1.5 illumination.

  11. Structural Transformation in Fe73.5Nb3Cu1Si15.5B7 Amorphous Alloy Induced by Laser Heating

    Science.gov (United States)

    Nykyruy, Yu. S.; Mudry, S. I.; Kulyk, Yu. O.; Zhovneruk, S. V.

    2018-03-01

    The effect of continuous laser irradiation (λ = 1.06 μm) with laser power of 45 W on the structure of Fe73.5Nb3Cu1Si15.5B7 amorphous alloy has been studied using X-ray diffraction and SEM methods. The sample of the ribbon has been placed at a distance from the focal plane of the lens, so a laser beam has been defocused and the diameter of laser spot on the ribbon surface has been about 10 mm. An exposure time τ varied within interval 0.25-0.70 s. Under such conditions structural transformation processes, which depend on the exposure time, have occurred in an irradiated zone. Crystallization process has started at τ = 0.35 s with the formation of α-Fe(Si) nanocrystalline phase, while complete crystallization has occurred at τ = 0.55 s with formation of two nanocrystalline phases: α-Fe(Si) and a hexagonal H-phase.

  12. Amorphous and nanocrystalline fraction calculus for the Fe{sub 73.5}Si{sub 3.5}Ge{sub 10}Nb{sub 3}B{sub 9}Cu{sub 1} alloy

    Energy Technology Data Exchange (ETDEWEB)

    Muraca, D. [Laboratorio de Solidos Amorfos, Departamento de Fisica, Facultad de Ingenieria, Universidad de Buenos Aires (Argentina); Moya, J. [Laboratorio de Solidos Amorfos, Departamento de Fisica, Facultad de Ingenieria, Universidad de Buenos Aires (Argentina); Carrera del Investigador, CONICET (Argentina); Cremaschi, V.J. [Laboratorio de Solidos Amorfos, Departamento de Fisica, Facultad de Ingenieria, Universidad de Buenos Aires (Argentina) and Carrera del Investigador, CONICET (Argentina)]. E-mail: vcremas@fi.uba.ar; Sirkin, H.R.M. [Laboratorio de Solidos Amorfos, Departamento de Fisica, Facultad de Ingenieria, Universidad de Buenos Aires (Argentina); Carrera del Investigador, CONICET (Argentina)

    2007-09-01

    We studied the relationship between the saturation magnetization (M {sub S}) of the Fe{sub 73.5}Si{sub 3.5}Ge{sub 10}Nb{sub 3}B{sub 9}Cu{sub 1} alloy and its nanocrystalline structure. Amorphous ribbons obtained by the melt spinning technique were heat-treated for 1 h at different temperatures. The optimal treatment to obtain a homogeneous structure of Fe{sub 3}(Si,Ge) nanocrystals with a grain size of around 10 nm embedded in an amorphous matrix involved heating at 540 C for 1 h. We calculated the magnetic contribution of the nanocrystals to the heat treated alloy using a linear model and measured the M {sub S} of the Fe{sub 73.5}Si{sub 3.5}Ge{sub 10}Nb{sub 3}B{sub 9}Cu{sub 1} nanocrystalline and of an amorphous alloy of the same composition of the amorphous matrix: Fe{sub 58}Si{sub 0.5}Ge{sub 3.5}Cu{sub 3}Nb{sub 9}B{sub 26}. Using experimental data and theoretical calculations, we obtained the amorphous and crystalline fraction of the heat-treated ribbons.

  13. Incorporation of the Fe3O4 and SiO2 nanoparticles in epoxy-modified silicone resin as the coating for soft magnetic composites with enhanced performance

    Science.gov (United States)

    Luo, Dahao; Wu, Chen; Yan, Mi

    2018-04-01

    Three inorganic-organic hybrids have been designed by incorporating epoxy-modified silicone resin (ESR) with SiO2, Fe3O4 and their mixture in the application as the coating of Fe soft magnetic composites (SMCs). The introduced SiO2 nanoparticles are well dispersed in the ESR, while the Fe3O4 tends to agglomerate or even separate from the ESR. Simultaneous addition of the SiO2 and Fe3O4 gives rise to satisfactory distribution of both nanoparticles and optimized magnetic performance of the SMCs with high permeability (124.6) and low loss (807.8 mW/cm3). On one hand, introduction of the ferromagnetic Fe3O4 reduces the magnetic dilution effect, which is beneficial for improved magnetization and permeability. On the other hand, SiO2 incorporation prevents the agglomeration of the Fe3O4 nanoparticles and gives rise to increased electrical resistivity for reduced core loss as well as enhanced mechanical strength of the SMCs.

  14. Deposition of multicomponent chromium carbide coatings using a non-conventional source of chromium and silicon with micro-additions of boron

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez Ruiz, Jesus Eduardo, E-mail: jesus.gonzalez@biomat.uh.cu [Biomaterials Center, University of Havana (Cuba); Rodriguez Cristo, Alejandro [Mechanical Plants Company, Road of the Sub-Plan, Farm La Cana, Santa Clara, Villa Clara (Cuba); Ramos, Adrian Paz [Department of Chemistry, Universite de Montreal, Quebec (Canada); Quintana Puchol, Rafael [Welding Research Center, Central University Marta Abreu of Las Villas, Villa Clara (Cuba)

    2017-01-15

    The chromium carbide coatings are widely used in the mechanical industry due to its corrosion resistance and mechanical properties. In this work, we evaluated a new source of chromium and silicon with micro-additions of boron on the deposition of multi-component coatings of chromium carbides in W108 steel. The coatings were obtained by the pack cementation method, using a simultaneous deposition at 1000 deg for 4 hours. The coatings were analyzed by X-ray diffraction, X-ray energy dispersive spectroscopy, optical microscopy, microhardness test method and pin-on-disc wear test. It was found that the coatings formed on W108 steel were mainly constituted by (Cr,Fe){sub 23}C{sub 6} , (Cr,Fe){sub 7} C{sub 3} , Cr{sub 5-x}Si{sub 3-x} C{sub x+z}, Cr{sub 3} B{sub 0,44}C{sub 1,4} and (or) Cr{sub 7} BC{sub 4} . The carbide layers showed thicknesses between 14 and 15 μm and maximum values of microhardness between 15.8 and 18.8 GPa. Also, the micro-additions of boron to the mixtures showed statistically significant influence on the thickness, microhardness and abrasive wear resistance of the carbide coatings. (author)

  15. Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride

    International Nuclear Information System (INIS)

    Wang, Hongzhe; Chen, Chao; Pan, Miao; Sun, Yiling; Yang, Xi

    2015-01-01

    Graphical abstract: - Highlights: • The phosphorus-doped SiN x with negative fixed charge was deposited by PECVD. • The increase of lifetime was observed on P-doped SiN x passivated Si under illumination. • The enhancement of lifetime was caused by the increase of negative fixed charges. - Abstract: This study reports a doubling of the effective minority carrier lifetime under light soaking conditions, observed in a boron-doped p-type Czochralski grown silicon wafer passivated by a phosphorus-doped silicon nitride thin film. The analysis of capacitance–voltage curves revealed that the fixed charge in this phosphorus-doped silicon nitride film was negative, which was unlike the well-known positive fixed charges observed in traditional undoped silicon nitride. The analysis results revealed that the enhancement phenomenon of minority carrier lifetime was caused by the abrupt increase in the density of negative fixed charge (from 7.2 × 10 11 to 1.2 × 10 12 cm −2 ) after light soaking.

  16. β-FeSi2 films prepared on 6H-SiC substrates by magnetron sputtering

    Science.gov (United States)

    Hong, Li; Hongbin, Pu; Chunlei, Zheng; Zhiming, Chen

    2015-06-01

    β-FeSi2 thin films have been successfully prepared by magnetron sputtering and post rapid thermal annealing method on 6H-SiC (0001) substrates using a FeSi2 target and a Si target. X-ray diffraction (XRD) and Raman spectroscopy are applied to analyze the formation of β-FeSi2 films. XRD spectra reveal that the amorphous FeSi2 films are transformed to β-FeSi2 phase as the annealing temperature is increased from 500 to 900 °C for 5 min and the optimal annealing temperature is 900 °C. The formation of β-FeSi2 is also confirmed by Raman spectroscopy. Scanning electron microscope (SEM) observations indicate that the film is flat, relatively compact and the interface between β-FeSi2 and 6H-SiC is clear. Atomic force microscope (AFM) measurements demonstrate that the surface roughness confirmed by the root mean square (RMS) of the β-FeSi2 film is 0.87 nm. Near-infrared spectrophotometer observation shows that the absorption coefficient is of the order of 105 cm-1 and the optical band-gap of the β-FeSi2 film is 0.88 eV. The β-FeSi2 film with high crystal quality is fabricated by co-sputtering a FeSi2 target and a Si target for 60 min and annealing at 900 °C for 5 min. Project supported by the National Natural Science Foundation of China (No. 51177134) and the Natural Science Basic Research Plan in Shaanxi Province of China (No. 2015JM6286).

  17. Study of ion beam sputtered Fe/Si interfaces as a function of Si layer thickness

    Science.gov (United States)

    Kumar, Anil; Brajpuriya, Ranjeet; Singh, Priti

    2018-01-01

    The exchange interaction in metal/semiconductor interfaces is far from being completely understood. Therefore, in this paper, we have investigated the nature of silicon on the Fe interface in the ion beam deposited Fe/Si/Fe trilayers keeping the thickness of the Fe layers fixed at 3 nm and varying the thickness of the silicon sandwich layer from 1.5 nm to 4 nm. Grazing incidence x-ray diffraction and atomic force microscopy techniques were used, respectively, to study the structural and morphological changes in the deposited films as a function of layer thickness. The structural studies show silicide formation at the interfaces during deposition and better crystalline structure of Fe layers at a lower spacer layer thickness. The magnetization behavior was investigated using magneto-optical Kerr effect, which clearly shows that coupling between the ferromagnetic layers is highly influenced by the semiconductor spacer layer thickness. A strong antiferromagnetic coupling was observed for a value of tSi = 2.5 nm but above this value an unexpected behavior of hysteresis loop (step like) with two coercivity values is recorded. For spacer layer thickness greater than 2.5 nm, an elemental amorphous Si layer starts to appear in the spacer layer in addition to the silicide layer at the interfaces. It is observed that in the trilayer structure, Fe layers consist of various stacks, viz., Si doped Fe layers, ferromagnetic silicide layer, and nonmagnetic silicide layer at the interfaces. The two phase hysteresis loop is explained on the basis of magnetization reversal of two ferromagnetic layers, independent of each other, with different coercivities. X-ray photo electron spectroscopy technique was also used to study interfaces characteristics as a function of tSi.

  18. The corrosion behaviour and structure of amorphous and thermally treated Fe-B-Si alloys

    International Nuclear Information System (INIS)

    Raicheff, R.; Zaprianova, V.; Petrova, E.

    2003-01-01

    The corrosion behaviour of magnetic amorphous alloys Fe 78 B 13 Si 9 , Fe 81 B 13 Si 4 C 2 and Fe 67 Co 18 Bi 4 S 1 obtained by rapid quenching from the melts are investigated in a model corrosive environment of 1N H 2 SO 4 . The structure of the alloys, is, characterized by DTA, SEM, TEM, X-ray and electron diffraction techniques. The dissolution kinetics of the,alloys is studied using gravimetric and electrochemical polarization measurements. It is established that the corrosion rate of the amorphous Fe 67 Co 18 Bt 4 S 1 alloy is up to 50 times lower than that of Fe 78 Bi 3 Si 9 alloy and the addition of cobalt leads to a considerable reduction of the rates of both partial corrosion reactions, while the addition of carbon results only in a moderate decrease (2-3 times) of the corrosion rate. It is also shown that the crystallization of the amorphous Fe 78 B 13 Si 9 alloy (at 700 o C for 3 h) leads to formation of multiphase structure consisting of crystalline phases α-Fe and Fe 3 (B,Si). After crystallization an increase of the rate of both hydrogen evolution and anodic dissolution reactions is observed which results in a considerable (an order of magnitude) increase of the corrosion rate of the alloy. (Original)

  19. Effect of boron additions on phase formation and magnetic properties of TbCu7-type melt spun SmFe ribbons

    International Nuclear Information System (INIS)

    Zheng, Chuanjiang; Yu, Dunbo; Li, Kuoshe; Luo, Yang; Jin, Jinling; Lu, Shuo; Li, Hongwei; Mao, Yongjun; Quan, Ningtao

    2016-01-01

    Melt spun ribbons of a series of SmFe 12 B x (x=0.0, 0.5, 0.75, 1.0, 1.25, and 1.5) have been prepared by the melt spinning technique. Sm–Fe–B melt spun ribbons with single phase TbCu 7 -type structure were prepared from the SmFe 12 B x (x=0.5, 0.75, and 1.0) alloys at the surface velocity around 40 m/s. The addition of boron not only inhibits the appearance of soft magnetic phase α-Fe, but also enhances the ability of amorphous formation for melt spun Sm–Fe ribbons. The concentration of boron atoms, however, exceeds the limit of the solubility (x>1.0) of Sm–Fe alloys, which does not impede the appearance of α-Fe but accelerates the formation of metastable phase Sm 2 Fe 23 B 3 that is unfavorable to their magnetic properties. Moreover, it is found that the addition of boron whose concentration is 0.0≤x≤0.75 can stabilize the metastable TbCu 7 -type structure because of the increase of the lattice parameter ratio c/a. The magnetic properties of as-annealed SmFe 12 B 1.0 melt spun ribbons with an energy product of 2.19MGOe, a coercivity of 2.36 kOe and a remanence of 4.8 kGs have been achieved. The microstructural characteristics of as-annealed melt spun SmFe 12 and SmFe 12 B 1.0 ribbons have been discussed as well. The following sequence of the hyperfine field H(6l)2e) and the isomer shift δ(3g)<δ(6l)<δ(2e) is obtained by the analysis of 57 Fe Mossbauer spectra. As the boron content is added gradually, the hyperfine fields of 3g and 6l sites increase slightly due to the competition of the positive electron polarization and the negative polarization. However, the value of H(2e) is almost constant. - Highlights: • A certain amount of boron additions can inhibit the emergence of the soft magnetic phase α-Fe and improve the ability of amorphous formation. • There is a solubility limit of boron atom within melt spun Sm–Fe alloys with TbCu 7 -type structure, and the metastable phase Sm 2 Fe 23 B 3 will appear when the content of boron

  20. Effect of Fe substitution on the structure and magnetocaloric effect of Mn{sub 5−x}Fe{sub x}GeSi{sub 2} alloys

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Y.W.; Yan, J.L., E-mail: yjl@gxu.edu.cn; Feng, E.L.; Tang, G.W.; Zhou, K.W.

    2017-01-15

    The structure and magnetocaloric effect of Mn{sub 5−x}Fe{sub x}GeSi{sub 2} compounds were studied. Analysis of X-ray powder diffraction and energy dispersive X-Ray spectroscopy revealed that Mn{sub 5−x}Fe{sub x}GeSi{sub 2} alloys with x<1 crystallize in the Mn{sub 5}Si{sub 3}-type structure (space group P6{sub 3}/mcm), maintaining the structure of Mn{sub 5}Ge{sub 3}; and alloys with x=1.5 and 2 consist of the major Mn{sub 5}Si{sub 3}-type phase and the minor Ni{sub 2}In-type phase (space group P6{sub 3}/mmc). The results of Rietveld refinement showed that the cell parameters for the Mn{sub 5}Si{sub 3}-type phase decrease with increasing Fe content. The positive slopes in Arrott plots indicate that a second-order ferromagnetic to paramagnetic transition occurs. The Curie temperature increases with increasing Fe content from 182 K for x=0.6 to 224 K for x=2. The maximum magnetic entropy change of 3.7 J/(kg K) for x=0.8 was found under a magnetic field change of 0–20 kOe. - Highlights: • Mn{sub 5−x}Fe{sub x}GeSi{sub 2} alloys with x<1 crystallize in the hexagonal Mn{sub 5}Si{sub 3}-type structure. Alloys with x=1.5 and 2 consist of a major Mn{sub 5}Si{sub 3}-type phase and a secondary Ni{sub 2}In-type phase. • The cell parameters decrease and the Curie temperature increases with increasing x in Mn{sub 5−x}Fe{sub x}GeSi{sub 2} alloys. • The maximum -∆S{sub M} of 3.7 J/(kg K) and RCP of 211 J/kg for x=0.8 was found under a magnetic field change of 0–20 kOe.

  1. Amorphous Si layers co-doped with B and Mn: Thin film growth and steering of magnetic properties

    International Nuclear Information System (INIS)

    Drera, G.; Mozzati, M.C.; Colombi, P.; Salvinelli, G.; Pagliara, S.; Visentin, D.; Sangaletti, L.

    2015-01-01

    Amorphous silicon thin films co-doped with manganese (5% at.) and boron (1.8% at.) have been prepared by RF sputtering on Al 2 O 3 substrates held at room temperature (RT). The films, with an average thickness of about 0.9 μm, were carefully characterized by micro-Raman and X-ray photoemission spectroscopies. A ferromagnetic (FM) behavior up to RT was observed. In order to discuss and possibly rule out extrinsic effects usually related to segregations of ferromagnetic impurities in the samples, magnetization measurements were carried out on the Al 2 O 3 substrates, as well as on Si:B and Si:Mn films grown with the same RF sputtering system. Only the Si:B:Mn films displayed a FM behavior up to RT. Since amorphous films doped with Mn alone did not display any signature of FM ordering, boron co-doping results to be crucial for the onset of the FM behavior. The conductivity of the samples is not affected by boron doping that, therefore, does not appear to significantly contribute to a possible carrier-mediated FM interaction between Mn ions by supplying extra charges to the system. On this basis, the capability of B to hinder the quenching of the Mn 3d magnetic moments has also to be regarded as a possible role of this co-dopant in the observed magnetization. - Highlights: • We successfully deposited amorphous silicon thin films co-doped with Mn and B. • Structural, electronic, and magnetic properties have been carefully characterized. • A ferromagnetic behavior up to room temperature was detected. • The extrinsic origin of magnetism is excluded. • Boron can play a relevant role to avoid quenching of magnetic moment in Mn ions

  2. Amorphous Si layers co-doped with B and Mn: Thin film growth and steering of magnetic properties

    Energy Technology Data Exchange (ETDEWEB)

    Drera, G. [I-LAMP, Dipartimento di Matematica e Fisica, Università Cattolica del Sacro Cuore, Via dei Musei 41, 25121 Brescia (Italy); Mozzati, M.C. [CNISM, Dipartimento di Fisica, Università di Pavia, Via Bassi 6, 27100 Pavia (Italy); Colombi, P. [CSMT Gestione s.c.a.r.l, Via Branze 45, 25123 Brescia (Italy); Salvinelli, G.; Pagliara, S.; Visentin, D. [I-LAMP, Dipartimento di Matematica e Fisica, Università Cattolica del Sacro Cuore, Via dei Musei 41, 25121 Brescia (Italy); Sangaletti, L., E-mail: sangalet@dmf.unicatt.it [I-LAMP, Dipartimento di Matematica e Fisica, Università Cattolica del Sacro Cuore, Via dei Musei 41, 25121 Brescia (Italy)

    2015-09-01

    Amorphous silicon thin films co-doped with manganese (5% at.) and boron (1.8% at.) have been prepared by RF sputtering on Al{sub 2}O{sub 3} substrates held at room temperature (RT). The films, with an average thickness of about 0.9 μm, were carefully characterized by micro-Raman and X-ray photoemission spectroscopies. A ferromagnetic (FM) behavior up to RT was observed. In order to discuss and possibly rule out extrinsic effects usually related to segregations of ferromagnetic impurities in the samples, magnetization measurements were carried out on the Al{sub 2}O{sub 3} substrates, as well as on Si:B and Si:Mn films grown with the same RF sputtering system. Only the Si:B:Mn films displayed a FM behavior up to RT. Since amorphous films doped with Mn alone did not display any signature of FM ordering, boron co-doping results to be crucial for the onset of the FM behavior. The conductivity of the samples is not affected by boron doping that, therefore, does not appear to significantly contribute to a possible carrier-mediated FM interaction between Mn ions by supplying extra charges to the system. On this basis, the capability of B to hinder the quenching of the Mn 3d magnetic moments has also to be regarded as a possible role of this co-dopant in the observed magnetization. - Highlights: • We successfully deposited amorphous silicon thin films co-doped with Mn and B. • Structural, electronic, and magnetic properties have been carefully characterized. • A ferromagnetic behavior up to room temperature was detected. • The extrinsic origin of magnetism is excluded. • Boron can play a relevant role to avoid quenching of magnetic moment in Mn ions.

  3. Preparation and properties of bisphenol-F based boron-phenolic resin/modified silicon nitride composites and their usage as binders for grinding wheels

    International Nuclear Information System (INIS)

    Lin, Chun-Te; Lee, Hsun-Tsing; Chen, Jem-Kun

    2015-01-01

    Highlights: • Bisphenol-F based boron-phenolic resins (B-BPF) with B−O bonds were synthesized. • The modified silicon nitride (m-SiN) was well dispersed and adhered in the B-BPF. • B-BPF/m-SiN composites have good thermal resistance and mechanical properties. • The grinding wheels bound by B-BPF/m-SiN have excellent grinding quality. - Abstract: In this study, phenolic resins based on bisphenol-F (BPF) were synthesized. Besides, ammonium borate was added in the synthesis process of BPF to form the bisphenol-F based boron-phenolic resins (B-BPF). The glass transition temperature, thermal resistance, flexural strength and hardness of B-BPF are respectively higher than those of BPF. This is due to the presence of new cross-link B−O bonds in the B-BPF. In addition, the 3-aminopropyltriethoxysilane modified silicon nitride powders (m-SiN) were fully mixed with B-BPF to form the B-BPF/m-SiN composites. The thermal resistance and mechanical properties of the B-BPF/m-SiN are promoted by the well-dispersed and well-adhered m-SiN in these novel polymer/ceramics composites. The results of grinding experiments indicate that the grinding wheels bound by the B-BPF/m-SiN have better grinding quality than those bound by the BPF. Thus the B-BPF/m-SiN composites are better binding media than the BPF resins

  4. Magneto-Impedance behavior of Co-Fe-Nb-Si-B-based ribbons

    Energy Technology Data Exchange (ETDEWEB)

    Sarkar, Partha; Mohanta, O.; Pal, S.K.; Panda, A.K. [National Metallurgical Laboratory, Council of Scientific and Industrial Research, Jamshedpur 831007 (India); Mitra, A., E-mail: amitra@nmlindia.or [National Metallurgical Laboratory, Council of Scientific and Industrial Research, Jamshedpur 831007 (India)

    2010-04-15

    The giant magneto-impedance of melt spun Co{sub x}Fe{sub 72-x}Nb{sub 4}Si{sub 4}B{sub 20}(x=10, 20, 36, 50) amorphous and nanostructured ribbons have been investigated. Alloys have been optimized at the driving current amplitude, frequency and found that amorphous ribbon of nominal composition of Co{sub 36}Fe{sub 36}Nb{sub 4}Si{sub 4}B{sub 20} shown maximum GMI ratio of 13%. The behaviour of the driving current amplitude on the GMI behaviour was studied and the sample was optimized for driving current amplitude, I{sub ac}=10 mA. The frequency dependence of the GMI behaviour was studied for the ribbon sample Co{sub 36}Fe{sub 36}Nb{sub 4}Si{sub 4}B{sub 20} at frequency in the range of 100 kHz-1.2 MHz of the optimized driving current amplitude and it was found that the sample showed the maximum GMI behaviour at f=700 kHz. The optimized samples were Joule heated at the current density J=0-35 A/m{sup 2} for a period of 1 min. The GMI ratio initially increased then progressively deteriorated with J, but after a certain range it shows up to 16% of improvement in the magneto-impedance value due the increase of nanocrystalline volume fraction. The asymmetry in the GMI profile was observed for the sample Joule heated at J=1-5 A/m{sup 2} for 1 min.

  5. Boron diffusion in Ge+ premorphized and BF2 implanted Si(001)

    International Nuclear Information System (INIS)

    Zou, L.F.; Acosta-Ortiz, S.E.; Zou, L.X.; Regalado, L.E.; Sun, D.Z.; Wang, Z.G.

    1998-01-01

    The annealing behavior of Si implanted with Ge and then BF 2 has been characterized by double crystal X-ray diffraction (DCXRD) and secondary ion mass spectroscopy (SIMS). The results show that annealing at 600 Centigrade for 60 minutes can only remove a little damage induced by implantation and nearly no redistribution of Ge and B atoms has occurred during the annealing. The initial crystallinity of Si is fully recovered after annealing at 950 Centigrade for 60 minutes and accompanied by Ge diffusion. Very shallow boron junction depth has been formed. When annealing temperature rises to 1050 Centigrade, B diffusion enhances, which leads to a deep diffusion and good distribution of B atoms into the Si substrate. The X-ray diffraction (004) rocking curves from the samples annealed at 1050 Centigrade for 60 minutes display two Si Ge peaks, which may be related to the B concentration profiles. (Author)

  6. Clinical evaluation of neodymium-iron-boron (Ne2Fe14B) rare earth magnets in the treatment of mid line diastemas

    Science.gov (United States)

    Manoj-Kumar, Mitta; Gowri-Sankar, Singaraju; Chaitanya, Nellore; Vivek-Reddy, Ganugapanta; Venkatesh, Nettam

    2016-01-01

    Background To evaluate the closure of midline diastema using the Neodymium-Iron-Boron magnets and to compare the treatment duration of midline diastemas with the use of magnets compared to regular orthodontic treatment. Material and Methods Thirty patients with age group 12 to 30 years with the midline diastema ranging from 0.5 to 3mm were selected. These patients were divided into two groups. Diastema closure in one group was accomplished by conventional method, in other group was done with Ne2Fe14B magnets. These magnets were fitted to the labial surfaces of the maxillary central incisors such a way that the opposite poles of the magnets face each other. At each appointment, study models and radiographs were taken for study subjects and the midline diastema was measured using digital vernier calipers on the study models obtained. Descriptive statistics carried out using Paired t-test. Results Subjects treated with Ne2Fe14B magnets showed a significant difference compared to fixed orthodontic appliance subjects with respect to time of closure, rate of space closure and incisal inclination. Significant difference between 2 groups with reduction of 64.6 days in time to diastema closure in subjects treated with Ne2Fe14B magnets (Pclosure of mid line diastema in less duration of time. Key words:Midline diastema, Ne2Fe14B magnets, rare earth magnets, space closure. PMID:27034757

  7. Bias voltage dependence of magnetic tunnel junctions comprising amorphous ferromagnetic CoFeSiB layer with double barriers

    International Nuclear Information System (INIS)

    Yim, H.I.; Lee, S.Y.; Hwang, J.Y.; Rhee, J.R.; Chun, B.S.; Wang, K.L.; Kim, Y.K.; Kim, T.W.; Lee, S.S.; Hwang, D.G.

    2008-01-01

    Double-barrier magnetic tunnel junctions (DMTJs) with and without an amorphous ferromagnetic material such as CoFeSiB 10, CoFe 5/CoFeSiB 5, and CoFe 10 (nm) were prepared and compared to investigate the bias voltage dependence of the tunneling magnetoresistance (TMR) ratio. Typical DMTJ structures were Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO x /free layer 10/AlO x /CoFe 7/IrMn 10/Ru 60 (in nanometers). The interlayer coupling field and the normalized TMR ratios at the applied voltages of +0.4 and -0.4 V of the amorphous CoFeSiB free-layer DMTJ offer lower and higher values than that of the polycrystalline CoFe free-layer DMTJ, respectively. An amorphous ferromagnetic CoFeSiB layer improves the interface roughness of the free layer/tunnel barrier and, as a result, the interlayer coupling field and bias voltage dependence of the TMR ratio are suppressed at a given voltage. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Ce-didymium-Fe-B sintered permanent magnets

    International Nuclear Information System (INIS)

    Homma, M.; Okada, M.; Sugimoto, S.

    1985-01-01

    Present works report the development of the low cost R-Fe-B permanent magnets. The best magnetic properties obtained in this studies are Br=13.5 kG, iHc=10.2 kOe and (BH)max=40 MGOe with an Fe-33.5wt%(5Ce-Didymium)-1wt% B alloy. Topics considered in this paper include cerium alloys, boron alloys, fabrication, capitalized cost, iron alloys, permanent magnets, and magnetic properties

  9. Wear resistance of TiB/sub 2/-Fe cermets

    International Nuclear Information System (INIS)

    Champagne, B.; Dallaire, S.

    1985-01-01

    A material which consists of TiB/sub 2/ dispersed in an iron matrix was synthesized by the exothermic reaction of ferrotitanium and boron. The as-reacted products were hot isostatically pressed to produce TiB/sub 2/-Fe cermets. The influence of HIP variables on the density and total fractional porosity of specimens is presented. Density above 95% is obtained by HIPping at temperatures below 1300 0 C. Increasing the temperature and the time of HIPping enhance the mechanical properties and wear resistance of TiB/sub 2/-Fe cermets by reducing their residual porosity. Relations obtained by regression analysis showed that the porosity strongly affects the properties of parts. Regression analysis point out that the wear loss of a 5% porosity TiB/sub 2/-Fe cermet is 270% higher than a dense HIPped cermet. Low stress and high stress abrasion resistance tests utilizing various abrasive media were carried out on dense HIPped cermets and results were compared with those obtained from WC-Co cermets and 1020 steel

  10. Effect of boron additions on phase formation and magnetic properties of TbCu{sub 7}-type melt spun SmFe ribbons

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Chuanjiang; Yu, Dunbo, E-mail: yudb2008@126.com; Li, Kuoshe; Luo, Yang; Jin, Jinling; Lu, Shuo; Li, Hongwei; Mao, Yongjun; Quan, Ningtao

    2016-08-15

    Melt spun ribbons of a series of SmFe{sub 12}B{sub x} (x=0.0, 0.5, 0.75, 1.0, 1.25, and 1.5) have been prepared by the melt spinning technique. Sm–Fe–B melt spun ribbons with single phase TbCu{sub 7}-type structure were prepared from the SmFe{sub 12}B{sub x} (x=0.5, 0.75, and 1.0) alloys at the surface velocity around 40 m/s. The addition of boron not only inhibits the appearance of soft magnetic phase α-Fe, but also enhances the ability of amorphous formation for melt spun Sm–Fe ribbons. The concentration of boron atoms, however, exceeds the limit of the solubility (x>1.0) of Sm–Fe alloys, which does not impede the appearance of α-Fe but accelerates the formation of metastable phase Sm{sub 2}Fe{sub 23}B{sub 3} that is unfavorable to their magnetic properties. Moreover, it is found that the addition of boron whose concentration is 0.0≤x≤0.75 can stabilize the metastable TbCu{sub 7}-type structure because of the increase of the lattice parameter ratio c/a. The magnetic properties of as-annealed SmFe{sub 12}B{sub 1.0} melt spun ribbons with an energy product of 2.19MGOe, a coercivity of 2.36 kOe and a remanence of 4.8 kGs have been achieved. The microstructural characteristics of as-annealed melt spun SmFe{sub 12} and SmFe{sub 12}B{sub 1.0} ribbons have been discussed as well. The following sequence of the hyperfine field H(6l)2e) and the isomer shift δ(3g)<δ(6l)<δ(2e) is obtained by the analysis of {sup 57}Fe Mossbauer spectra. As the boron content is added gradually, the hyperfine fields of 3g and 6l sites increase slightly due to the competition of the positive electron polarization and the negative polarization. However, the value of H(2e) is almost constant. - Highlights: • A certain amount of boron additions can inhibit the emergence of the soft magnetic phase α-Fe and improve the ability of amorphous formation. • There is a solubility limit of boron atom within melt spun Sm–Fe alloys with TbCu{sub 7}-type structure, and the

  11. Magnetization switching of NiFeSiB free layers for magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Chun, B.S.; Ko, S.P.; Oh, B.S.; Hwang, J.Y.; Rhee, J.R.; Kim, T.W.; Saito, S.; Yoshimura, S.; Tsunoda, M.; Takahashi, M.; Kim, Y.K.

    2006-01-01

    Ferromagnetic amorphous Ni 16 Fe 62 Si 8 B 14 layer have been studied as free layers for magnetic tunnel junctions (MTJs) to enhance cell switching performance. Traditional MTJ free layer materials such as NiFe and CoFe were also prepared for switching comparison purposes. Both NiFeSiB and NiFe resulted in an order of magnitude smaller switching fields compared to the CoFe. The switching field was further reduced for the synthetic antiferromagnetic NiFeSiB free layered structure

  12. Crystallisation kinetics of amorphous Fe{sub 72.5-x}Cu{sub 1}Nb{sub 4.5}Si{sub 10+x+y}B{sub 12-y} alloy

    Energy Technology Data Exchange (ETDEWEB)

    Miglierini, M. [Komenskeho Univ., Bratislava (Czechoslovakia). Dept. of Nuclear Physics and Technics; Lipka, J. [Komenskeho Univ., Bratislava (Czechoslovakia). Dept. of Nuclear Physics and Technics; Sitek, J. [Komenskeho Univ., Bratislava (Czechoslovakia). Dept. of Nuclear Physics and Technics

    1994-11-01

    Fe{sub 73.5}Cu{sub 1}Nb{sub 3}Si{sub 13.5}B{sub 9} and Fe{sub 72.5-x}Cu{sub 1}Nb{sub 4.5}Si{sub 10+x+y}B{sub 12-y} alloys are compared from the point of view of crystallisation behaviour and changes in the short-range order in the amorphous reminder. The increase in Nb to 4.5 at.% in the latter system slows down the formation of nanocrystals to approximately 40% even after 16 hours of anneal at 550 C for x = 0.5, y = 3. Segregation-induced changes in the short-range order are manifested via hyperfine field distributions corresponding to the amorphous reminder. (orig.)

  13. Structural transformation in mechanosynthesized bcc Fe-Al-Si(Ge) solid solutions during heating

    International Nuclear Information System (INIS)

    Kubalova, L.M.; Sviridov, I.A.; Vasilyeva, O.Ya.; Fadeeva, V.I.

    2007-01-01

    X-ray diffractometry and Moessbauer spectroscopy study of Fe 50 Al 25 Si 25 and Fe 50 Al 25 Ge 25 alloys obtained by mechanical alloying (MA) of elementary powders was carried out. Phase transformation during heating of synthesized products was studied using differential scanning calorimetry (DSC). After 2.5 h of MA monophase alloys containing bcc Fe(Al, Ge) solid solutions Fe(Al, Si) are formed. Fe(Al, Si) is partially ordered B2 type and Fe(Al, Ge) is completely disordered. DSC curves of synthesized alloys displayed the presence of exothermal peaks caused by phase transformation. The metastable Fe(Al, Si) solid solution transformed into FeAl 1-x Si x (B2) and FeSi 1-x Al x (B20) equilibrium phases. The Fe(Al, Ge) solid solution transformed into equilibrium phases through intermediate stage of Fe 6 Ge 3 Al 2 metastable phase formation. The Fe 6 Ge 3 Al 2 phase dissociated into three equilibrium phases: FeAl 1-x Ge x (B2), χ-Fe 6 Ge 5 and η-Fe 13 (Ge, Al) 8 (B8 2 ). The structure of Fe 6 Ge 3 Al 2 was calculated by Rietveld method, the distribution of Al and Ge in the elementary cell and its parameters were calculated. Moessbauer study showed that Fe(Al, Si) and Fe(Al, Ge) solid solutions are paramagnetic. In the equilibrium state the alloy containing Si is also paramagnetic while the alloy with Ge showed ferromagnetic properties

  14. Preparation and characterization of amorphous SiO2 coatings deposited by mirco-arc oxidation on sintered NdFeB permanent magnets

    International Nuclear Information System (INIS)

    Xu, J.L.; Xiao, Q.F.; Mei, D.D.; Zhong, Z.C.; Tong, Y.X.; Zheng, Y.F.; Li, L.

    2017-01-01

    Amorphous SiO 2 coatings were prepared on sintered NdFeB magnets by micro-arc oxidation (MAO) in silicate solution. The surface and cross-sectional morphologies, element and phase composition, corrosion resistance and magnetic properties of the coatings were investigated by scanning electron microscopy (SEM), energy dispersive X-ray spectrometer (EDS), X-ray photoelectron spectroscopy (XPS), potentiodynamic polarization test and physical properties measurements system (PPMS). The results showed that the surface morphologies of the coatings exhibited the “coral reef” like structure, different from the typical MAO porous structure. With increasing the voltages, the thickness of the coatings increased from 12.72 to 19.90 µm, the content of Si element increased, while the contents of Fe, Nd and P elements decreased. The coatings were mainly composed of amorphous SiO 2 and a few amorphous Fe 2 O 3 and Nd 2 O 3 . The amorphous SiO 2 coatings presented excellent thermal shock resistance, while the thermal shock resistance decreased with increasing the voltages. The corrosion resistance of the coatings increased with increasing the voltages, and it could be enhanced by one order of magnitude compared to the uncoated NdFeB magnets. The MAO coatings slightly decreased the magnetic properties of the NdFeB samples in different degrees. - Highlights: • Amorphous SiO 2 coatings were prepared on sintered NdFeB magnets by micro-arc oxidation. • The coatings presented excellent thermal shock resistance. • The corrosion resistance could be enhanced by one order of magnitude. • The MAO coatings slightly decreased the magnetic properties of the NdFeB samples.

  15. Implantation of boron in silicon

    International Nuclear Information System (INIS)

    Hofker, W.K.

    1975-01-01

    The distribution versus depth of boron implanted in silicon and the corresponding electrical activity obtained after annealing are studied. The boron distributions are measured by secondary-ion mass spectrometry. Boron distributions implanted at energies in the range from 30 keV to 800 keV in amorphous and polycrystalline silicon are analysed. Moments of these distributions are determined by a curve-fitting programme and compared with moments calculated by Winterbon. Boron distributions obtained by implantations along a dense crystallographic direction in monocrystalline silicon are found to have penetrating tails. After investigation of some possible mechanisms of tail formation it is concluded that the tails are due to channelling. It was found that the behaviour of boron during annealing is determined by the properties of three boron fractions consisting of precipitated boron, interstitial boron and substitutional boron. The electrical activity of the boron versus depth is found to be consistent with the three boron fractions. A peculiar redistribution of boron is found which is induced by the implantation of a high dose of heavy ions and subsequent annealing. Different mechanisms which may cause the observed effects, such as thermal diffusion which is influenced by lattice strain and damage, are discussed. (Auth.)

  16. Glass forming ability and magnetic properties of Co(40.2−x)Fe(20.1+x)Ni6.7B22.7Si5.3Nb5 (x=0–10) bulk metallic glasses produced by suction casting

    International Nuclear Information System (INIS)

    Sarlar, Kagan; Kucuk, Ilker

    2015-01-01

    The effect of Fe concentration on the glass forming ability (GFA) and magnetic properties in Co (40.2−x) Fe (20.1+x) Ni 6.7 B 22.7 Si 5.3 Nb 5 (x=0–10) bulk metallic glasses were investigated. By suction casting method, the bulk metallic glasses with diameters up to 2 mm were produced. We try to find out which Fe concentration makes an influence on Co based system's magnetic properties and glass forming ability. The curves of thermal analysis, obtained using differential scanning calorimetry (DSC), show that the Co (40.2−x) Fe (20.1+x) Ni 6.7 B 22.7 Si 5.3 Nb 5 (x=0–10) have a supercooled liquid region (∆T x ) of about 44 K. The saturation magnetizations (J s ) for as-cast BMG alloys were in the range of 0.62 T−0.81 T. - Highlights: • The effect of Fe concentration on the glass forming ability. • The substitution of an appropriate amount of Fe can enhance the GFA. • The substitution of Fe for Co also improves soft magnetic properties of the BMGs. • The high of J s 0.62−0.81 T with a low H c of 2−289 A/m of the alloys

  17. Annealing characteristics of SiO2-Si structures after incoherent light pulse processing

    International Nuclear Information System (INIS)

    Sieber, N.; Klabes, R.; Voelskow, M.; Fenske, F.

    1982-01-01

    The behaviour of oxide charges and interface charges in boron implanted and non-implanted SiO 2 -Si structures as well as the electrical activation of the dopants by the action of incoherent light pulses was studied. Depth profiles of electrically active boron ions are presented for different annealing conditions as measured by the pulsed C-V method. It can be concluded that exposure of MOS structures to intense radiation of flash lamps does not increase the fixed charge and the fast state density at the SiO 2 -Si interface if optimal annealing conditions (energy densities) are employed. Low dose boron implanted silicon can be electrically activated without diffusion or segregation of dopants

  18. Depth profiling of hydrogen passivation of boron in Si(100)

    Science.gov (United States)

    Huang, L. J.; Lau, W. M.; Simpson, P. J.; Schultz, P. J.

    1992-08-01

    The properties of SiO2/p-Si were studied using variable-energy positron-annihilation spectroscopy and Raman spectroscopy. The oxide film was formed by ozone oxidation in the presence of ultraviolet radiation at room temperature. Both the positron-annihilation and Raman analyses show that chemical cleaning of boron-doped p-type Si(100) using concentrated hydrofluoric acid prior to the oxide formation leads to hydrogen incorporation in the semiconductor. The incorporated hydrogen passivates the boron dopant by forming a B-H complex, the presence of which increases the broadening of the line shape in the positron-annihilation analysis, and narrows the linewidth of the Raman peak. Annealing of the SiO2/Si sample at a moderate temperature of 220 °C in vacuum was found sufficient to dissociate the complex and reactivate the boron dopant.

  19. Distribution of impurity elements in slag-silicon equilibria for oxidative refining of metallurgical silicon for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Johnston, M.D.; Barati, M. [Department of Materials Science and Engineering, The University of Toronto, 184 College Street, Toronto, Ont. (Canada)

    2010-12-15

    The possibility of refining metallurgical grade silicon to a high-purity product for solar cell applications by the slagging of impurity elements was investigated. Distribution coefficients were determined for B, Ca, Mg, Fe, K and P between magnesia or alumina saturated Al{sub 2}O{sub 3}-CaO-MgO-SiO{sub 2} and Al{sub 2}O{sub 3}-BaO-SiO{sub 2} slags and silicon at 1500 C. The partitioning of the impurity elements between molten silicon and slag was examined in terms of basicity and oxygen potential of the slag, with particular focus on the behaviour of boron and phosphorus. The experimental results showed that both of these aspects of slag chemistry have a significant influence on the distribution coefficient of B and P. Increasing the oxygen potential by additions of silica was found to increase the distribution coefficients for both B and P. Increasing the basicity of the slag was not always effective in achieving high removal of these elements from silicon as excess amounts of basic oxides lower the activity of silica and consequently the oxygen potential. The extent of this effect is such that increasing basicity can lead to a decrease in distribution coefficient. Increasing lime in the slag increased distribution coefficients for B and P, but this counterbalancing effect was such that distributions were the lowest in barium-containing slags, despite barium oxide being the most basic of the fluxes used in this study. The highest removal efficiencies achieved were of the order of 80% and 90% for B and P, respectively. It was demonstrated that for the removal of B and P from metallurgical-grade silicon to solar-grade levels, a slag mass about 5 times the mass of silicon would be required. (author)

  20. Mechanochemical synthesis of nanocrystalline Fe and Fe–B magnetic alloys

    Energy Technology Data Exchange (ETDEWEB)

    Mohammadi, Majid; Ghasemi, Ali, E-mail: ali13912001@yahoo.com; Tavoosi, Majid

    2016-12-01

    Mechanochemical synthesis and magnetic characterization of nanocrystalline Fe and Fe–B magnetic alloys was the goal of this study. In this regard, different Fe{sub 2}O{sub 3}–B{sub 2}O{sub 3} powder mixtures with sufficient amount of CaH{sub 2} were milled in a planetary ball mill in order to produce nanocrystalline Fe, Fe{sub 95}B{sub 5} and Fe{sub 85}B{sub 15} alloys. The produced samples were characterized using X-ray diffraction (XRD), differential scanning calorimetry (DSC), scanning electron microscopy (SEM) and vibrating sample magnetometer (VSM). The results showed that, nanocrystalline Fe, Fe{sub 95}B{sub 5} and Fe{sub 85}B{sub 15} alloys can be successfully synthesized by the reduction reaction of Fe{sub 2}O{sub 3} and B{sub 2}O{sub 3} with CaH{sub 2} during mechanical alloying. The structure of produced Fe{sub 95}B{sub 5} and Fe{sub 85}B{sub 15} alloys was a combination of Fe and Fe{sub 2}B phases with average crystallite sizes of about 15 and 10 nm, respectively. The produced nanocrystalline alloys exhibited soft magnetic properties with the coercivity and saturation of magnetization in the range of 170–240 Oe and 9–28 emu/g, respectively. Increasing the boron content has a destructive effect on soft magnetic properties of Fe–B alloys. - Highlights: • We study the mechanochemical synthesis of nanocrystalline boron, Fe and Fe–B alloys. • We study the reduction reaction of B{sub 2}O{sub 3}–CaH{sub 2} during milling. • We study the reduction reaction of Fe{sub 2}O{sub 3}–CaH{sub 2} during milling. • We study the reduction reaction of Fe{sub 2}O{sub 3}–B{sub 2}O{sub 3}–CaH{sub 2} during milling. • We study the effect of B on magnetic properties of nanocrystalline Fe–B alloys.

  1. Measurement of proton induced thick target γ-ray yields on B, N, Na, Al and Si from 2.5 to 4.1 MeV

    Energy Technology Data Exchange (ETDEWEB)

    Chiari, M., E-mail: chiari@fi.infn.it [INFN-Florence and Department of Physics and Astronomy, University of Florence, via G. Sansone 1, 50019 Sesto Fiorentino (Italy); Ferraccioli, G.; Melon, B.; Nannini, A.; Perego, A.; Salvestrini, L. [INFN-Florence and Department of Physics and Astronomy, University of Florence, via G. Sansone 1, 50019 Sesto Fiorentino (Italy); Lagoyannis, A.; Preketes-Sigalas, K. [Tandem Accelerator Laboratory, Institute of Nuclear and Particle Physics, NCSR “Demokritos”, 153.10 Aghia Paraskevi, Athens (Greece)

    2016-01-01

    Thick target yields for proton induced γ-ray emission (PIGE) on low-Z nuclei, namely B, N, Na, Al and Si, were measured for proton energies from 2.5 to 4.1 MeV and emission angles of 0°, 45° and 90°, at the 3 MV Tandetron laboratory of INFN-LABEC in Florence. The studied reactions were: {sup 10}B(p,α′γ){sup 7}Be (E{sub γ} = 429 keV), {sup 10}B(p,p′γ){sup 10}B (E{sub γ} = 718 keV) and {sup 11}B(p,p′γ){sup 11}B (E{sub γ} = 2125 keV) for boron; {sup 14}N(p,p′γ){sup 14}N (E{sub γ} = 2313 keV) for nitrogen; {sup 23}Na(p,p′γ){sup 23}Na (E{sub γ} = 441 and 1636 keV) and {sup 23}Na(p,α′γ){sup 20}Ne (E{sub γ} = 1634 keV) for sodium; {sup 27}Al(p,p′γ){sup 27}Al (E{sub γ} = 844 and 1014 keV) and {sup 27}Al(p,α′γ){sup 24}Mg (E{sub γ} = 1369 keV) for aluminum; {sup 28}Si(p,p′γ){sup 28}Si (E{sub γ} = 1779 keV) and {sup 29}Si(p,p′γ){sup 29}Si (E{sub γ} = 1273 keV) for silicon. The PIGE thick target yields have been measured with an overall uncertainty typically better than 10%. The use of the measured thick target yield to benchmark and validate experimental cross sections available in the literature is demonstrated.

  2. ThSi_2 type ytterbium disilicide and its analogues YbT_xSi_2_-_x (T = Cr, Fe, Co)

    International Nuclear Information System (INIS)

    Peter, Sebastian C.; Kanatzidis, Mercouri G.

    2012-01-01

    YbSi_2 and the derivatives YbT_xSi_2_-_x (T = Cr, Fe, Co) crystallizing in the α-ThSi_2 structure type were obtained as single crystals from reactions run in liquid indium. All silicides were investigated by single-crystal X-ray diffraction, I4_1/amd space group and the lattice constants are: a = 3.9868(6) Aa and c = 13.541(3) Aa for YbSi_2, a = 4.0123(6) Aa and c = 13.542(3) Aa for YbCr_0_._2_7Si_1_._7_3, a = 4.0142(6) Aa and c = 13.830(3) Aa for YbCr_0_._7_1Si_1_._2_9, a = 4.0080(6) Aa and c = 13.751(3) Aa for YbFe_0_._3_4Si_1_._6_6, and a = 4.0036(6) Aa, c = 13.707(3) Aa for YbCo_0_._2_1Si_1_._7_9. YbSi_2 and YbT_xSi_2_-_x compounds are polar intermetallics with three-dimensional Si and M (T+Si) polyanion sub-networks, respectively, filled with ytterbium atoms. The degree of substitution of transition metal at the silicon site is signficant and leads to changes in the average bond lengths and bond angles substantially. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Interaction between solute atoms and radiation defects in Fe-Ni-Si and Fe-Mn-Si alloys under irradiation with proton ions at low-temperature

    Energy Technology Data Exchange (ETDEWEB)

    Murakami, Kenta, E-mail: murakami@tokai.t.u-tokyo.ac.jp [Nuclear Professional School, School of Engineering, The University of Tokyo, 2-22 Shirakata-Shirane, Tokai-mura, Ibaraki, 319-1188 (Japan); Iwai, Takeo, E-mail: iwai@med.id.yamagata-u.ac.jp [Faculty of Medicine, Yamagata University, 2-2-2 Iida-Nishi, Yamagata, Yamagata-shi, 990-9585 (Japan); Abe, Hiroaki [Nuclear Professional School, School of Engineering, The University of Tokyo, 2-22 Shirakata-Shirane, Tokai-mura, Ibaraki, 319-1188 (Japan); Sekimura, Naoto, E-mail: sekimura@n.t.u-tokyo.ac.jp [Department of Nuclear Engineering and Management, School of Engineering, The University of Tokyo, 7-3-1, Tokyo, Hongo, Bunkyo, 113-8656 (Japan)

    2016-12-15

    Isochronal annealing followed by residual resistivity measurements at 12 K was performed in Fe-0.6Ni-0.6Si and Fe-1.5Mn-0.6Si alloys irradiated with 1 MeV proton ions below 70 K, and recovery stages were compared with those of Fe–0.6Ni and Fe–1.5Mn. The effects of silicon addition in the Fe-Ni alloy was observed as the appearance of a new recovery stage at 282–372 K, presumably corresponding to clustering of solute atoms in matrix, and as a change in mixed dumbbell migration at 122–142 K. Silicon addition mitigated the manganese effect in Fe–Mn alloy that is obstructing the recovery of radiation defects. Reduction of resistivity in Fe-Mn-Si alloy also suggested formation of small solute atom clusters.

  4. Ferromagnetism and nonmetallic transport of thin-film α-FeSi(2): a stabilized metastable material.

    Science.gov (United States)

    Cao, Guixin; Singh, D J; Zhang, X-G; Samolyuk, German; Qiao, Liang; Parish, Chad; Jin, Ke; Zhang, Yanwen; Guo, Hangwen; Tang, Siwei; Wang, Wenbin; Yi, Jieyu; Cantoni, Claudia; Siemons, Wolter; Payzant, E Andrew; Biegalski, Michael; Ward, T Z; Mandrus, David; Stocks, G M; Gai, Zheng

    2015-04-10

    A metastable phase α-FeSi_{2} was epitaxially stabilized on a silicon substrate using pulsed laser deposition. Nonmetallic and ferromagnetic behaviors are tailored on α-FeSi_{2} (111) thin films, while the bulk material of α-FeSi_{2} is metallic and nonmagnetic. The transport property of the films renders two different conducting states with a strong crossover at 50 K, which is accompanied by the onset of a ferromagnetic transition as well as a substantial magnetoresistance. These experimental results are discussed in terms of the unusual electronic structure of α-FeSi_{2} obtained within density functional calculations and Boltzmann transport calculations with and without strain. Our finding sheds light on achieving ferromagnetic semiconductors through both their structure and doping tailoring, and provides an example of a tailored material with rich functionalities for both basic research and practical applications.

  5. Magnetic phase transition in MnFeP0.5As0.4Si0.1

    International Nuclear Information System (INIS)

    Wang, J L; Campbell, S J; Tegus, O; Brueck, E; Dou, S X

    2010-01-01

    We have carried out a detailed investigation of the magnetic phase transition in MnFeP 0.5 As 0.4 Si 0.1 . Temperature hysteresis has been observed in the variable temperature magnetization curves (B appl = 0.01 T) with T C W ∼ 302 K on warming and T C C ∼ 292 K on cooling. The first order nature of this transition in MnFeP 0.5 As 0.4 Si 0.1 is confirmed by the negative slope obtained from isotherms of M 2 versus B/M around the critical temperature. Linear thermal expansion measurements reveal a large volume change, ΔV/V∼8.7x10 -3 at the magnetic phase transition and that this magnetovolume effect is suppressed to ΔV/V ∼ 5.5x10 -3 in an applied field of B appl = 1.0 T. Analyses of 57 Fe Moessbauer spectra (4.5 - 300 K) using a random distribution model and taking nearest-neighbour environments into account, indicate that the paramagnetic and ferromagnetic phases coexist over a temperature range of ∼ 45 K around the Curie temperature. The Debye temperature for MnFeP 0.5 As 0.4 Si 0.1 has been evaluated as θ D = 350 ± 20 K from the temperature dependence of the average isomer shift.

  6. Fracture toughness of borides formed on boronized ductile iron

    International Nuclear Information System (INIS)

    Sen, Ugur; Sen, Saduman; Koksal, Sakip; Yilmaz, Fevzi

    2005-01-01

    In this study, fracture toughness properties of boronized ductile iron were investigated. Boronizing was realized in a salt bath consisting of borax, boric acid and ferro-silicon. Boronizing heat treatment was carried out between 850 and 950 deg. C under the atmospheric pressure for 2-8 h. Borides e.g. FeB, Fe 2 B formed on ductile iron was verified by X-ray diffraction (XRD) analysis, SEM and optical microscope. Experimental results revealed that longer boronizing time resulted in thicker boride layers. Optical microscope cross-sectional observation of borided layers showed dentricular morphology. Both microhardness and fracture toughness of borided surfaces were measured via Vickers indenter. The harnesses of borides formed on the ductile iron were in the range of 1160-2140 HV 0.1 and fracture toughness were in the range of 2.19-4.47 MPa m 1/2 depending on boronizing time and temperature

  7. Improving the electrochemical properties of nanosized LiFePO4-based electrode by boron doping

    International Nuclear Information System (INIS)

    Trócoli, Rafael; Franger, Sylvain; Cruz, Manuel; Morales, Julián; Santos-Peña, Jesús

    2014-01-01

    Highlights: • Thermal treatment of boron phosphate with LiFePO 4 provides electrode materials with high performance in lithium half-cells: 160 mAh·g -1 (90% of theoretical capacity) under C/5 rate • The products are composites containing boron-modified LiFePO 4 , FePO 4 and an amorphous phase with ionic diffusion properties • The boron treatment affects textural, conductive and lithium diffusivity of the electrode material leading to higher performance • A limited boron-doping of the phospholivine structure is observed - Abstract: Electrode materials with homogeneous distribution of boron were obtained by heating mixtures of nanosized carbon-coated lithium iron phosphate and BPO 4 in 3-9% weight at 700 °C. The materials can be described as nanocomposites containing i) LiFePO 4 , possibly doped with a low amount of boron, ii) FePO 4 and iii) an amorphous layer based on Li 4 P 2 O 7 -derived material that surrounds the phosphate particles. The thermal treatment with BPO 4 also triggered changes in the carbon coating graphitic order. Galvanostatic and voltammetric studies in lithium half-cells showed smaller polarisation, higher capacity and better cycle life for the boron-doped composites. For instance, one of the solids, called B 6 -LiFePO 4 , provided close to 150 and 140 mAhg -1 (87% and 81% of theoretical capacity, respectively) under C/2.5 and C regimes after several cycles. Improved specific surface area, carbon graphitization, conductivity and lithium ion diffusivity in the boron-doped phospholivine network account for this excellent rate performance. The properties of an amorphous layer surrounding the phosphate particles also account for such higher performance

  8. Synthesis and microwave absorption enhancement of Fe-doped NiO@SiO2@graphene nanocomposites

    International Nuclear Information System (INIS)

    Wang, Lei; Huang, Ying; Ding, Xiao; Liu, Panbo; Zong, Meng; Wang, Yan

    2013-01-01

    Highlights: • Fe-doped NiO@SiO 2 @graphene composites have excellent microwave performance. • The reflection loss of Fe doped NiO@SiO 2 @graphene was below −10 dB in 7–11 GHz. • The maximum absorption of Fe-doped NiO@SiO 2 @graphene was −51.2 dB at 8.6 GHz. -- Abstract: Fe-doped NiO@SiO 2 @graphene nanocomposites have been successfully fabricated for the first time, in which Fe-doped NiO nanoparticles are about 3 nm in diameter. In order to measure their electromagnetic properties, Fe-doped NiO@SiO 2 @graphene (25 wt%) wax composites were then prepared. The experimental results show that Fe-doped NiO@SiO 2 @graphene nanocomposites exhibit significantly enhanced microwave absorption performance in terms of both the maximum reflection loss value and the absorption bandwidth in comparison with NiO@SiO 2 @graphene. The maximum reflection loss of Fe-doped NiO@SiO 2 @graphene nanocomposites can reach −51.2 dB at 8.6 GHz with a thickness of 4 mm, and the absorption bandwidth with the reflection loss below −10 dB is 4 GHz (from 7 to 11 GHz). Therefore, this kind of nanocomposites may have the potential as high-efficient absorbers for microwave absorption applications

  9. submitter Energy Resolution Of Si/Fe And Si/Pb Electromagnetic Calorimeters

    CERN Document Server

    Bosetti, M; Pensotti, S.; Penzo, A.; Rancoita, P.G.; Rattaggi, M.; Redaelli, M.; Salvato, G.; Terzi, G.

    1993-01-01

    The energy resolution of electromagnetic sampling calorimeters using silicon mosaics as active medium, has been measured for Pb and Fe absorbers at incoming electron energies E of 2, 4, and 6 GeV. The energy resolution, found for the Si/Pb sented by a(E)/E = pling frequency. The energy resolution can be rewritten as a function of the dead area energy losses (D): a(E)/E = (KO + all))% ,/- with KO = (17.6 f 0.3)%, (24.1&0.8)%, for Si/Pb, Si/Fe, respectively; a1 = 1.2f0.3 for both absorbers.

  10. Silicon (100)/SiO2 by XPS

    Energy Technology Data Exchange (ETDEWEB)

    Jensen, David S.; Kanyal, Supriya S.; Madaan, Nitesh; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Linford, Matthew R.

    2013-09-25

    Silicon (100) wafers are ubiquitous in microfabrication and, accordingly, their surface characteristics are important. Herein, we report the analysis of Si (100) via X-ray photoelectron spectroscopy (XPS) using monochromatic Al K radiation. Survey scans show that the material is primarily silicon and oxygen, and the Si 2p region shows two peaks that correspond to elemental silicon and silicon dioxide. Using these peaks the thickness of the native oxide (SiO2) was estimated using the equation of Strohmeier.1 The oxygen peak is symmetric. The material shows small amounts of carbon, fluorine, and nitrogen contamination. These silicon wafers are used as the base material for subsequent growth of templated carbon nanotubes.

  11. The effect of Fe-coverage on the structure, morphology and magnetic properties of α-FeSi2 nanoislands

    International Nuclear Information System (INIS)

    Tripathi, J K; Goldfarb, I; Garbrecht, M; Kaplan, W D; Markovich, G

    2012-01-01

    Self-assembled α-FeSi 2 nanoislands were formed using solid-phase epitaxy of low (∼1.2 ML) and high (∼21 ML) Fe coverages onto vicinal Si(111) surfaces followed by thermal annealing. At a resulting low Fe-covered Si(111) surface, we observed in situ, by real-time scanning tunneling microscopy and surface electron diffraction, the entire sequence of Fe–silicide formation and transformation from the initially two-dimensional (2 × 2)-reconstructed layer at 300 °C into (2 × 2)-reconstructed nanoislands decorating the vicinal step-bunch edges in a self-ordered fashion at higher temperatures. In contrast, the silicide nanoislands at a high Fe-covered surface were noticeably larger, more three-dimensional, and randomly distributed all over the surface. Ex situ x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy indicated the formation of an α-FeSi 2 island phase, in an α-FeSi 2 { 112} ∥ Si{ 111} orientation. Superconducting quantum interference device magnetometry showed considerable superparamagnetism, with ∼1.9 μ B /Fe atom at 4 K for the low Fe-coverage, indicating stronger ferromagnetic coupling of individual magnetic moments, as compared to high Fe-coverage, where the calculated moments were only ∼0.8 μ B /Fe atom. Such anomalous magnetic behavior, particularly for the low Fe-coverage case, is radically different from the non-magnetic bulk α-FeSi 2 phase, and may open new pathways to high-density magnetic memory storage devices. (paper)

  12. Preparation and characterization of amorphous SiO{sub 2} coatings deposited by mirco-arc oxidation on sintered NdFeB permanent magnets

    Energy Technology Data Exchange (ETDEWEB)

    Xu, J.L., E-mail: jlxu@nchu.edu.cn [Center for Biomedical Materials and Engineering, Harbin Engineering University, Harbin 150001 (China); School of Materials Science and Engineering, Nanchang Hangkong University, Nanchang 330063 (China); Xiao, Q.F.; Mei, D.D. [School of Materials Science and Engineering, Nanchang Hangkong University, Nanchang 330063 (China); Zhong, Z.C., E-mail: zzhong2014@sina.com [The Institute for Rare Earth Magnetic Materials and Devices, Jiangxi University of Science and Technology, Ganzhou 341000 (China); Tong, Y.X. [Center for Biomedical Materials and Engineering, Harbin Engineering University, Harbin 150001 (China); Zheng, Y.F., E-mail: yfzheng@pku.edu.cn [Center for Biomedical Materials and Engineering, Harbin Engineering University, Harbin 150001 (China); Li, L. [Center for Biomedical Materials and Engineering, Harbin Engineering University, Harbin 150001 (China)

    2017-03-15

    Amorphous SiO{sub 2} coatings were prepared on sintered NdFeB magnets by micro-arc oxidation (MAO) in silicate solution. The surface and cross-sectional morphologies, element and phase composition, corrosion resistance and magnetic properties of the coatings were investigated by scanning electron microscopy (SEM), energy dispersive X-ray spectrometer (EDS), X-ray photoelectron spectroscopy (XPS), potentiodynamic polarization test and physical properties measurements system (PPMS). The results showed that the surface morphologies of the coatings exhibited the “coral reef” like structure, different from the typical MAO porous structure. With increasing the voltages, the thickness of the coatings increased from 12.72 to 19.90 µm, the content of Si element increased, while the contents of Fe, Nd and P elements decreased. The coatings were mainly composed of amorphous SiO{sub 2} and a few amorphous Fe{sub 2}O{sub 3} and Nd{sub 2}O{sub 3}. The amorphous SiO{sub 2} coatings presented excellent thermal shock resistance, while the thermal shock resistance decreased with increasing the voltages. The corrosion resistance of the coatings increased with increasing the voltages, and it could be enhanced by one order of magnitude compared to the uncoated NdFeB magnets. The MAO coatings slightly decreased the magnetic properties of the NdFeB samples in different degrees. - Highlights: • Amorphous SiO{sub 2} coatings were prepared on sintered NdFeB magnets by micro-arc oxidation. • The coatings presented excellent thermal shock resistance. • The corrosion resistance could be enhanced by one order of magnitude. • The MAO coatings slightly decreased the magnetic properties of the NdFeB samples.

  13. Si/Fe flux ratio influence on growth and physical properties of polycrystalline β-FeSi2 thin films on Si(100) surface

    Science.gov (United States)

    Tarasov, I. A.; Visotin, M. A.; Aleksandrovsky, A. S.; Kosyrev, N. N.; Yakovlev, I. A.; Molokeev, M. S.; Lukyanenko, A. V.; Krylov, A. S.; Fedorov, A. S.; Varnakov, S. N.; Ovchinnikov, S. G.

    2017-10-01

    This work investigates the Si/Fe flux ratio (2 and 0.34) influence on the growth of β-FeSi2 polycrystalline thin films on Si(100) substrate at 630 °C. Lattice deformations for the films obtained are confirmed by X-ray diffraction analysis (XRD). The volume unit cell deviation from that of β-FeSi2 single crystal are 1.99% and 1.1% for Si/Fe =2 and Si/Fe =0.34, respectively. Absorption measurements show that the indirect transition ( 0.704 eV) of the Si/Fe =0.34 sample changes to the direct transition with a bandgap value of 0.816 eV for the sample prepared at Si/Fe =2. The absorption spectrum of the Si/Fe =0.34 sample exhibits an additional peak located below the bandgap energy value with the absorption maximum of 0.36 eV. Surface magneto-optic Kerr effect (SMOKE) measurements detect the ferromagnetic behavior of the β-FeSi2 polycrystalline films grown at Si/Fe =0.34 at T=10 K, but no ferromagnetism was observed in the samples grown at Si/Fe =2. Theoretical calculations refute that the cell deformation can cause the emergence of magnetization and argue that the origin of the ferromagnetism, as well as the lower absorption peak, is β-FeSi2 stoichiometry deviations. Raman spectroscopy measurements evidence that the film obtained at Si/Fe flux ratio equal to 0.34 has the better crystallinity than the Si/Fe =2 sample.

  14. The influence of boron on the crystal structure and properties of mullite. Investigations at ambient, high-pressure, and high-temperature conditions

    Energy Technology Data Exchange (ETDEWEB)

    Luehrs, Hanna

    2013-11-21

    Mullite is one of the most important synthetic compounds for advanced structural and functional ceramic materials. The crystal structure of mullite with the composition Al{sub 2}[Al{sub 2+2x}Si{sub 2-2x}]O{sub 10-x} can incorporate a large variety of foreign cations, including (amongst others) significant amounts of boron. However, no chemical or crystal structure analyses of boron-mullites (B-mullites) were available prior to this work, thus representing the key aspects of this thesis. Furthermore, the influence of boron on selected properties of mullite under ambient, high-temperature, and high-pressure conditions are addressed. Starting from a 3:2 mullite composition (Al{sub 4.5}Si{sub 1.5}O{sub 9.75}), the initial hypothesis for this study was a 1:1 isomorphous replacement of silicon by boron according to the coupled substitution mechanism: 2 Si{sup 4+} + O{sup 2-} → 2 B{sup 3+} + □. Based on a series of compounds synthesized from sol-gel derived precursors at ambient pressure and 1200 C, the formation conditions and physical properties of B-mullites were investigated. The formation temperature for B-mullites decreases with increasing boron-content, as revealed by thermal analyses. An anisotropic development of lattice parameters is observed: Whereas lattice parameters a and b only exhibit minor changes, a linear relationship between lattice parameter c and the amount of boron in the crystal structure was established, on the basis of prompt gamma activation analyses (PGAA) and Rietveld refinements. According to this relationship about 15% of the silicon in mullite can be replaced by boron yielding single-phase B-mullite. B-mullites with significantly higher (∝ factor 3) boron-contents in the mullite structure were also observed but the respective samples contain alumina impurities. Fundamental new details regarding the response of B-mullite to high-temperature and highpressure are presented in this thesis. On the one hand, long-term thermal stability at

  15. Insight into cation disorder of Li{sub 2}Fe{sub 0.5}Mn{sub 0.5}SiO{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Bini, Marcella [Dept. of Chemistry, University of Pavia, viale Taramelli 16, Pavia 27100 (Italy); Ferrari, Stefania, E-mail: stefania.ferrari@unipv.it [Dept. of Chemistry, University of Pavia, viale Taramelli 16, Pavia 27100 (Italy); Capsoni, Doretta; Spreafico, Clelia; Tealdi, Cristina; Mustarelli, Piercarlo [Dept. of Chemistry, University of Pavia, viale Taramelli 16, Pavia 27100 (Italy)

    2013-04-15

    Transition metal lithium orthosilicates are promising cathode materials for lithium-ion batteries. Here we report a combined experimental (in situ X-ray diffraction) and computational (static lattice and molecular dynamics) study of the thermal behavior of the Li{sub 2}Fe{sub 0.5}Mn{sub 0.5}SiO{sub 4} orthosilicate from room temperature to 950 °C. Our X-ray results showed that Pmnb polymorph is the most stable all over the explored temperature range. A significant cation disorder up to 80%, based on the anti-site defect, was found. The defect concentration depends on the synthesis route and temperature, and is completely reversible after the thermal treatments. Moreover, a careful analysis of the impurity phases allowed us to identify Li{sub 2}SiO{sub 3}, Fe{sub 3}O{sub 4} and Li{sub 3}Fe{sub 5}O{sub 8}, the last one never reported before. The minimization of defects by opportunely tuning the synthetic parameters would be of great importance in view of potential applications of these materials in lithium batteries. - Graphical abstract: A combined experimental in situ X-ray diffraction and computational study of the thermal behavior of the Li{sub 2}Fe{sub 0.5}Mn{sub 0.5}SiO{sub 4} is reported herein. The anti-site defect does justify the diffraction patterns changes with temperature. Highlights: ► Study of the thermal behavior of Li{sub 2}Fe{sub 0.5}Mn{sub 0.5}SiO{sub 4}. ► The anti-site defect does justify the diffraction patterns changes with temperature. ► The Pmnb polymorph is stable in the investigated temperaturerange.

  16. Surface passivation of n-type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks

    Science.gov (United States)

    van de Loo, B. W. H.; Ingenito, A.; Verheijen, M. A.; Isabella, O.; Zeman, M.; Kessels, W. M. M.

    2017-06-01

    Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that charge-carrier recombination at particularly highly n-type doped black Si surfaces is further suppressed. In this work, this issue is addressed through systematically studying lowly and highly doped b-Si surfaces, which are passivated by atomic-layer-deposited Al2O3 films or SiO2/Al2O3 stacks. In lowly doped b-Si textures, a very low surface recombination prefactor of 16 fA/cm2 was found after surface passivation by Al2O3. The excellent passivation was achieved after a dedicated wet-chemical treatment prior to surface passivation, which removed structural defects which resided below the b-Si surface. On highly n-type doped b-Si, the SiO2/Al2O3 stacks result in a considerable improvement in surface passivation compared to the Al2O3 single layers. The atomic-layer-deposited SiO2/Al2O3 stacks therefore provide a low-temperature, industrially viable passivation method, enabling the application of highly n- type doped b-Si nanotextures in industrial silicon solar cells.

  17. Influence of laser power on atom probe tomographic analysis of boron distribution in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Tu, Y., E-mail: ytu@imr.tohoku.ac.jp [The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313 (Japan); Takamizawa, H.; Han, B.; Shimizu, Y.; Inoue, K.; Toyama, T. [The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313 (Japan); Yano, F. [The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313 (Japan); Tokyo City University, Setagaya, Tokyo 158-8557 (Japan); Nishida, A. [Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504 (Japan); Nagai, Y. [The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313 (Japan)

    2017-02-15

    The relationship between the laser power and the three-dimensional distribution of boron (B) in silicon (Si) measured by laser-assisted atom probe tomography (APT) is investigated. The ultraviolet laser employed in this study has a fixed wavelength of 355 nm. The measured distributions are almost uniform and homogeneous when using low laser power, while clear B accumulation at the low-index pole of single-crystalline Si and segregation along the grain boundaries in polycrystalline Si are observed when using high laser power (100 pJ). These effects are thought to be caused by the surface migration of atoms, which is promoted by high laser power. Therefore, for ensuring a high-fidelity APT measurement of the B distribution in Si, high laser power is not recommended. - Highlights: • Influence of laser power on atom probe tomographic analysis of B distribution in Si is investigated. • When using high laser power, inhomogeneous distributions of B in single-crystalline and polycrystalline Si are observed. • Laser promoted migration of B atoms over the specimen is proposed to explain these effects.

  18. Bismuth-boron multiple bonding in BiB_2O"- and Bi_2B"-

    International Nuclear Information System (INIS)

    Jian, Tian; Cheung, Ling Fung; Chen, Teng-Teng; Wang, Lai-Sheng

    2017-01-01

    Despite its electron deficiency, boron is versatile in forming multiple bonds. Transition-metal-boron double bonding is known, but boron-metal triple bonds have been elusive. Two bismuth boron cluster anions, BiB_2O"- and Bi_2B"-, containing triple and double B-Bi bonds are presented. The BiB_2O"- and Bi_2B"- clusters are produced by laser vaporization of a mixed B/Bi target and characterized by photoelectron spectroscopy and ab initio calculations. Well-resolved photoelectron spectra are obtained and interpreted with the help of ab initio calculations, which show that both species are linear. Chemical bonding analyses reveal that Bi forms triple and double bonds with boron in BiB_2O"- ([Bi≡B-B≡O]"-) and Bi_2B"- ([Bi=B=Bi]"-), respectively. The Bi-B double and triple bond strengths are calculated to be 3.21 and 4.70 eV, respectively. This is the first experimental observation of Bi-B double and triple bonds, opening the door to design main-group metal-boron complexes with multiple bonding. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Nanocrystal Growth in Thermally Treated Fe75Ni2Si8B13C2 Amorphous Alloy

    Czech Academy of Sciences Publication Activity Database

    Minić, Dragica M.; Blagojević, V.; Minić, Dušan M.; David, Bohumil; Pizúrová, Naděžda; Žák, Tomáš

    43A, č. 9 (2012), s. 3062-3069 ISSN 1073-5623 R&D Projects: GA MŠk 1M0512 Institutional support: RVO:68081723 Keywords : Nanocrystal growth * Fe75Ni2Si8B13C2 * Amorphous alloy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.627, year: 2012

  20. Photoluminescence of the Mg2Al4Si5O18-Al2O3-MgAl2O4-SiO2 ceramic system containing Fe3+ and Cr3+ as impurity ions

    Science.gov (United States)

    Sosman, L. P.; López, A.; Pedro, S. S.; Papa, A. R. R.

    2018-02-01

    This work presents the results of photoluminescence, excitation and radiative decay time for a ceramic system containing Mg2Al4Si5O18-Al2O3-MgAl2O4-SiO2 with Fe3+ and Cr3+ as impurity ions. Emission data were obtained using several excitation wavelengths and the excitation data were acquired for the most intense emission bands. The optical results were analyzed according to the Tanabe-Sugano (TS) theory from which the crystalline field parameter Dq and Racah parameters B and C were obtained for the Fe3+ and Cr3+ sites. The results indicate that the Fe3+ and Cr3+ ions occupy tetrahedral and octahedral sites, respectively. The emission from Fe3+ and Cr3+ ions causes an intense and broad band ranging between 350 nm and 850 nm, showing that this material is a potential tunable radiation source at room temperature.

  1. Properties of ion implanted epitaxial CoSi2/Si(1 0 0) after rapid thermal oxidation

    International Nuclear Information System (INIS)

    Zhao, Q.T.; Kluth, P.; Xu, J.; Kappius, L.; Zastrow, U.; Wang, Z.L.; Mantl, S.

    2000-01-01

    Epitaxial CoSi 2 layers were grown on Si(1 0 0) using molecular beam allotaxy. Boron ion implantations and rapid thermal oxidation (RTO) were performed. During oxidation, SiO 2 formed on the surface of the CoSi 2 layers, and the silicides was pushed into the substrate. The diffusion of boron was slightly retarded during oxidation for the specimen with a 20 nm epitaxial CoSi 2 capping layer as compared to the specimen without CoSi 2 capping layer. The electrical measurements showed that the silicide has good Schottky contacts with the boron doped silicon layer after RTO. A nanometer silicide patterning process, based on local oxidation of silicide (LOCOSI) layer, was also investigated. It shows two back-to-back Schottky diodes between the two separated parts of the silicide

  2. Preparation and characterization of amorphous SiO2 coatings deposited by mirco-arc oxidation on sintered NdFeB permanent magnets

    Science.gov (United States)

    Xu, J. L.; Xiao, Q. F.; Mei, D. D.; Zhong, Z. C.; Tong, Y. X.; Zheng, Y. F.; Li, L.

    2017-03-01

    Amorphous SiO2 coatings were prepared on sintered NdFeB magnets by micro-arc oxidation (MAO) in silicate solution. The surface and cross-sectional morphologies, element and phase composition, corrosion resistance and magnetic properties of the coatings were investigated by scanning electron microscopy (SEM), energy dispersive X-ray spectrometer (EDS), X-ray photoelectron spectroscopy (XPS), potentiodynamic polarization test and physical properties measurements system (PPMS). The results showed that the surface morphologies of the coatings exhibited the "coral reef" like structure, different from the typical MAO porous structure. With increasing the voltages, the thickness of the coatings increased from 12.72 to 19.90 μm, the content of Si element increased, while the contents of Fe, Nd and P elements decreased. The coatings were mainly composed of amorphous SiO2 and a few amorphous Fe2O3 and Nd2O3. The amorphous SiO2 coatings presented excellent thermal shock resistance, while the thermal shock resistance decreased with increasing the voltages. The corrosion resistance of the coatings increased with increasing the voltages, and it could be enhanced by one order of magnitude compared to the uncoated NdFeB magnets. The MAO coatings slightly decreased the magnetic properties of the NdFeB samples in different degrees.

  3. Viscosity and Structure of CaO-SiO2-P2O5-FetO System with Varying P2O5 and FeO Content

    Science.gov (United States)

    Diao, Jiang; Gu, Pan; Liu, De-Man; Jiang, Lu; Wang, Cong; Xie, Bing

    2017-10-01

    A rotary viscosimeter and Raman spectrum were employed to measure the viscosity and structural information of the CaO-SiO2-P2O5-FetO system at 1673 K. The experimental data have been compared with the calculated results using different viscosity models. It shows that the National Physical Laboratory (NPL) and Pal models fit the CaO-SiO2-P2O5-FeOt system better. With the P2O5 content increasing from 5% to 14%, the viscosity increases from 0.12 Pa s to 0.27 Pa s. With the FeO content increasing from 30% to 40%, the viscosity decreases from 0.21 Pa s to 0.12 Pa s. Increasing FeO content makes the complicated molten melts become simple, and increasing P2O5 content will complicate the molten melts. The linear relation between viscosity and structure parameter Q(Si + P) was obtained by regression analysis. The calculated viscosity by using the optimized NPL and Pal model are almost identical with the fitted values.

  4. Corelation between the crystallisation process and change in thermoelectromotive force for the amorphous alloy Fe89.8Ni1.5Si5.2B3C0.5

    Directory of Open Access Journals (Sweden)

    Maričić Aleksa M.

    2003-01-01

    Full Text Available Thermal and kinetic analyses of the structural changes for the amorphous alloy Fe89.8Ni1.5Si5.2B3C0.5, during the processes of non-isothermal heating and isothermal annealing, have been performed. The crystallisation process has been investigated using the method of differential scanning calorimetry (DSC. It is determined that this alloy crystalizes through three different stages. Changes in the electronic structure of the amorphous tape, for the temperature range 20 to 700ºC have been studied. This was achieved by measuring the thermoelectromotive force (TEMS, of the thermo pair made of two tapes with same chemical structure of the alloy FeNiSiBC, but different atomic structure: one is in the crystal state (CL and the other is in the amorphous state (AM. Analysis of the temperature dependence of the electromotive force has shown the following: the investigated alloy is thermically stable up to 450ºC and changes in the atomic structure as well as equalising of the free electron density in both parts of the thermo pair AM-CL, take place in the temperature range from 450 to 550ºC. Kinetic parameters of the process were determined by measuring time dependence of the TEMS in isothermic conditions at the temperatures 450, 480 and 510ºC.

  5. Improved magnetoimpedance and mechanical properties on nanocrystallization of amorphous Fe68.5Si18.5Cu1Nb3B9 ribbons

    International Nuclear Information System (INIS)

    Sahoo, Trilochan; Majumdar, B.; Srinivas, V.; Srinivas, M.; Nath, T.K.; Agarwal, G.

    2013-01-01

    The effect of heat-treatment temperature on evolution of microstructures, mechanical and soft magnetic properties and magnetoimpedance (MI) effect in rapidly solidified Fe 68.5 Si 18.5 Cu 1 Nb 3 B 9 ribbons, has been investigated. The as-quenched ribbons were subjected to heat-treatment at different temperatures between 400 and 600 °C for 1 h under high vacuum. Detailed structural studies on the ribbons heat-treated at and above 525 °C revealed the presence of nanocrystalline Fe 3 Si phases embedded in a residual amorphous matrix. The ribbon heat-treated at 550 °C temperature exhibits maximum ductility, maximum relative permeability of 4.8×10 4 , minimum coercivity of 0.1 Oe, and maximum MI value of 62%. The enhanced MI effect is believed to be related to the magnetic softening of 550 °C heat-treated ribbons. However, the magnetic properties and MI effect deteriorated in the samples heat-treated above 550 °C due to the coarsening of grain sizes. The soft magnetic behavior of the nanocrystalline ribbons are discussed in the light of random anisotropy model, whereas the MI effect is discussed through standard skin effect in electrodynamics. - Highlights: • Microstructure was tuned by controlled crystallization to obtain superior magnetic properties. • Improved MI in the heat-treated ribbons is attributed to the superior electromagnetic properties. • Correlation between MI and magnetic properties of nc-Fe 68.5 Si 18.5 Cu 1 Nb 3 B 9 is established. • All the observed features are consistent with the proposed random anisotropy model

  6. The effect of boron doping on the magnetostriction of Fe-Ga and Fe-Al samples

    Energy Technology Data Exchange (ETDEWEB)

    Doerr, Mathias; Granovsky, Sergey; Loewenhaupt, Michael [TU Dresden, Institut fuer Festkoerperphysik (Germany); Teodoro dos Santos, Claudio; Bormio-Nunes, Cristina [Universidade de Sao Paulo, Escola de Engenharia de Lorena, Lorena (Brazil)

    2011-07-01

    Fe-Ga (Galfenol) based alloys are used in a number of magnetomechanical applications because of the high magnetostriction values of more than 100 ppm at room temperature. The addition of boron inhibits the crystallographic ordering of the alloys and stabilizes the disordered A2 structure that is responsible for the high striction values. Especially, polycrystalline and rapid cooled Fe-Ga-B and Fe-Al-B samples were investigated in our project. Magnetization and longitudinal as well as transversal magnetostriction measurements at temperatures of 5 K, 80 K and 300 K show a similar effect of the amount of B as found on single crystals. Whereas the saturation magnetization is nearly the same and mainly determined by the Fe content, a dependence of the striction values on the amount of B is visible (more than 10% in the Fe-Al system). The results illustrate the influence of the stoichiometry and the preparation conditions on the magnetomechanical properties.

  7. Effect of Y addition on crystallization behavior and soft-magnetic properties of Fe{sub 78}Si{sub 9}B{sub 13} ribbons

    Energy Technology Data Exchange (ETDEWEB)

    Zhanwei, Liu; Dunbo, Yu, E-mail: yudb2008@126.com; Kuoshe, Li; Yang, Luo; Chao, Yuan; Zilong, Wang; Liang, Sun; Kuo, Men

    2017-08-15

    Highlights: • Thermal stability of Fe-Si-B amorphous alloy is enhanced by Y addition. • Y addition can improve soft magnetic properties of Fe-Si-B amorphous alloy. • Decomposition of metastable Fe{sub 3}B phase is related to Y content in Fe-Si-B matrix. - Abstract: A series of amorphous Fe-Si-B ribbons with various Y addition were prepared by melt-spinning. The effect of Y addition on crystallization behavior, thermal and magnetic properties was systematically investigated. With the increase of Y content, the initial crystallization temperature shifted to a higher temperature, indicating that the thermal stability of amorphous state in Fe-Si-B-Y ribbon is enhanced compared to that of Fe-Si-B alloy. Meanwhile, compared to the two exothermic peaks in the samples with lower Y content, a new exothermic peak was found in the ribbons with Y content higher than 1 at%, which corresponded to the decomposition of metastable Fe{sub 3}B phase. Among all the alloys, Fe{sub 76.5}Si{sub 9}B{sub 13}Y{sub 1.5} alloy exhibits optimized magnetic properties, with high saturation magnetization M{sub s} of 187 emu/g and low coercivity H{sub cJ} of 7.6 A/m.

  8. Enhancement in (BHmax of PLD-made isotropic Nd-Fe-B thick film magnets deposited on Si substrates

    Directory of Open Access Journals (Sweden)

    M. Nakano

    2017-05-01

    Full Text Available Increase in Nd contents of a PLD-made isotropic Nd-Fe-B thick-film magnet enabled us to enhance the thickness of the film magnet deposited on a Si substrate because the linear expansion coefficient of Nd is an intermediate value between Nd2Fe14B and Si. The large amount of Nd, however, degraded the residual magnetic polarization and (BHmax. In the study, we reduced the Nd contents of each Nd-Fe-B film by inserting a Nd or a Nd-rich Nd-Fe-B buffer layer between a Nd-Fe-B film and a Si substrate in order to suppress the mechanical destruction together with the improvement in magnetic properties. It was found that the mechanical property of a Nd-Fe-B film comprising the Nd-Fe-B buffer layer in the thickness range from 10 to 60 μm was superior than that of a sample with the Nd buffer layer. Resultantly, an average (BHmax value of Nd-Fe-B films with each Nd-Fe-B buffer layer deposited on Si substrates could be enhanced by approximately 15 kJ/m3 compared to that of non-buffer-layered films.

  9. Characteristics of magnetic tunnel junctions comprising ferromagnetic amorphous NiFeSiB layers

    International Nuclear Information System (INIS)

    Chun, B.S.; Kim, Y.K.; Hwang, J.Y.; Yim, H.I.; Rhee, J.R.; Kim, T.W.

    2007-01-01

    Magnetic tunnel junctions (MTJs), which consisted of amorphous ferromagnetic Ni 16 Fe 62 Si 8 B 14 free layers, were investigated. NiFeSiB has a lower saturation magnetization (M s : 800 emu/cm 3 ) than Co 90 Fe 10 and a higher anisotropy constant (K u : 2700 erg/cm 3 ) than Ni 80 Fe 20 . By increasing the free layer thickness, the tunnel magnetoresistance (TMR) ratio of up to 41% was achieved and it exhibited a much lower switching field (H sw ) than the conventionally used CoFe free layer MTJ. Furthermore, by inserting a thin CoFe layer (1 nm) at the tunnel barrier/NiFeSiB interface, the TMR ratio and switching squareness were enhanced

  10. Corrosion resistance of the NdFeB coated with AlN/SiC bilayer thin films by magnetron sputtering under different environments

    International Nuclear Information System (INIS)

    Tao, Lei; Li, Heqin; Shen, Jiong; Qiao, Kai; Wang, Wei; Zhou, Chu; Zhang, Jing; Tang, Qiong

    2015-01-01

    The AlN/SiC bilayer and SiC monolayer thin films were deposited on sintered NdFeB by RF magnetron sputtering to improve the corrosion resistance. Their structures and morphologies were studied by XRD and AFM and SEM. The corrosion behaviors of AlN/SiC and SiC-coated NdFeB in 3.5 wt% NaCl, 20 wt% NaOH and 0.1 mol/L H 2 SO 4 solutions were characterized with potentiodynamic polarization curves. The results show that AlN/SiC and SiC thin films can evidently improve the corrosion resistance of NdFeB, and the AlN/SiC films have the better resistance than the SiC film. - Highlights: • SiC monolayer and AlN/SiC bilayer thin films have been prepared on NdFeB at room temperature by RF magnetron sputtering. • NdFeB coated with AlN/SiC bilayer films has more corrosion resistance than that coated with SiC monolayer film under different environments. • The grains of the AlN/SiC bilayer films are finer and the surface roughness is lower than that of SiC monolayer film

  11. Corrosion resistance of the NdFeB coated with AlN/SiC bilayer thin films by magnetron sputtering under different environments

    Energy Technology Data Exchange (ETDEWEB)

    Tao, Lei [School of Materials Science and Engineering, Hefei University of Technology, Anhui Hefei 230009 (China); Li, Heqin, E-mail: lhqjs@hfut.edu.cn [School of Materials Science and Engineering, Hefei University of Technology, Anhui Hefei 230009 (China); Shen, Jiong [Earth-Panda Advance Magnetic Material Co., Ltd., Anhui Lujiang 231500 (China); Qiao, Kai; Wang, Wei; Zhou, Chu [School of Materials Science and Engineering, Hefei University of Technology, Anhui Hefei 230009 (China); Zhang, Jing; Tang, Qiong [School of Materials Science and Engineering, Hefei University of Technology, Anhui Hefei 230009 (China); School of Electronic Science and Applied Physics, Hefei University of Technology, Anhui Hefei 230009 (China)

    2015-02-01

    The AlN/SiC bilayer and SiC monolayer thin films were deposited on sintered NdFeB by RF magnetron sputtering to improve the corrosion resistance. Their structures and morphologies were studied by XRD and AFM and SEM. The corrosion behaviors of AlN/SiC and SiC-coated NdFeB in 3.5 wt% NaCl, 20 wt% NaOH and 0.1 mol/L H{sub 2}SO{sub 4} solutions were characterized with potentiodynamic polarization curves. The results show that AlN/SiC and SiC thin films can evidently improve the corrosion resistance of NdFeB, and the AlN/SiC films have the better resistance than the SiC film. - Highlights: • SiC monolayer and AlN/SiC bilayer thin films have been prepared on NdFeB at room temperature by RF magnetron sputtering. • NdFeB coated with AlN/SiC bilayer films has more corrosion resistance than that coated with SiC monolayer film under different environments. • The grains of the AlN/SiC bilayer films are finer and the surface roughness is lower than that of SiC monolayer film.

  12. Silicon electrodeposition from chloride-fluoride melts containing K2SiF6 and SiO2

    Directory of Open Access Journals (Sweden)

    Zhuk Sergey I.

    2017-01-01

    Full Text Available Silicon electrodeposition on glassy carbon from the KF-KCl-K2SiF6, KF-KCl-K2SiF6-KOH and KF-KCl-K2SiF6-SiO2 melts was studied by the cyclic voltammetry. Тhe electroreduction of Si(IV to metallic Si was observed as a single 4-electron wave under all considered conditions. The reactions of cathode reduction of silicon from fluoride and oxyfluoride complexes were suggested. It was shown that the process can be controlled by the preliminary transformation of SiO44- to SiF62- and SiOxFyz-. The influence of the current density on structure and morphology of silicon deposits obtained during galvanostatic electrolysis of the KF-KCl-K2SiF6-SiO2 melt was studied.

  13. Effect of Carbon Doping on the Structure and Magnetic Phase Transition in (Mn,Fe2(P,Si))

    Science.gov (United States)

    Thang, N. V.; Yibole, H.; Miao, X. F.; Goubitz, K.; van Eijck, L.; van Dijk, N. H.; Brück, E.

    2017-08-01

    Given the potential applications of (Mn,Fe2(P,Si))-based materials for room-temperature magnetic refrigeration, several research groups have carried out fundamental studies aimed at understanding the role of the magneto-elastic coupling in the first-order magnetic transition and further optimizing this system. Inspired by the beneficial effect of the addition of boron on the magnetocaloric effect of (Mn,Fe2(P,Si))-based materials, we have investigated the effect of carbon (C) addition on the structural properties and the magnetic phase transition of Mn_{1.25}Fe_{0.70}P_{0.50}Si_{0.50}C_z and Mn_{1.25}Fe_{0.70}P_{0.55}Si_{0.45}C_z compounds by x-ray diffraction, neutron diffraction and magnetic measurements in order to find an additional control parameter to further optimize the performance of these materials. All samples crystallize in the hexagonal Fe_2P-type structure (space group P-62m), suggesting that C doping does not affect the phase formation. It is found that the Curie temperature increases, while the thermal hysteresis and the isothermal magnetic entropy change decrease by adding carbon. Room-temperature neutron diffraction experiments on Mn_{1.25}Fe_{0.70}P_{0.55}Si_{0.45}C_z compounds reveal that the added C substitutes P/Si on the 2 c site and/or occupies the 6 k interstitial site of the hexagonal Fe_2P-type structure.

  14. Fabrication of hierarchical graphene@Fe3O4@SiO2@polyaniline quaternary composite and its improved electrochemical performance

    International Nuclear Information System (INIS)

    Wang, Lei; Zhu, Jianfeng; Yang, Haibo; Wang, Fen; Qin, Yi; Zhao, Ting; Zhang, Pei

    2015-01-01

    Highlights: • Graphene@Fe 3 O 4 @SiO 2 @polyaniline hierarchical structures have been fabricated. • The reflection loss of the composites is below −10 dB in 10.5–16.3 GHz. • The maximum absorption of the composites is −40.7 dB at 12.5 GHz. - Abstract: Hierarchical graphene@Fe 3 O 4 @SiO 2 @polyaniline quaternary composite is fabricated subtly. Their microwave absorption properties are also investigated in the 2–18 GHz frequency range. Transmission electron microscopy (TEM) and scanning electron microscope (SEM) reveal that Fe 3 O 4 @SiO 2 @polyaniline core@shell@shell heteronanostructures are densely covered on the surfaces of graphene, and form hierarchical structures. Compared with two-dimensional binary nanocomposites of graphene@Fe 3 O 4 , the hierarchical structure exhibits enhanced EM absorption in terms of both the maximum reflection loss value and the absorption bandwidth. The maximum reflection loss value can reach −40.7 dB at 12.5 GHz with a thickness of 2.5 mm and the bandwidth corresponding to the reflection loss below −10 dB is 5.8 GHz (from 10.5 to 16.3 GHz)

  15. Microstructure, soft magnetic properties and applications of amorphous Fe-Co-Si-B-Mo-P alloy

    Science.gov (United States)

    Hasiak, Mariusz; Miglierini, Marcel; Łukiewski, Mirosław; Łaszcz, Amadeusz; Bujdoš, Marek

    2018-05-01

    DC thermomagnetic properties of Fe51Co12Si16B8Mo5P8 amorphous alloy in the as-quenched and after annealing below crystallization temperature are investigated. They are related to deviations in the microstructure as revealed by Mössbauer spectrometry. Study of AC magnetic properties, i.e. hysteresis loops, relative permeability and core losses versus maximum induction was aimed at obtaining optimal initial parameters for simulation process of a resonant transformer for a rail power supply converter. The results obtained from numerical analyses including core losses, winding losses, core mass, and dimensions were compared with the same parameters calculated for Fe-Si alloy and ferrite. Moreover, Steinmetz coefficients were also calculated for the as-quenched Fe51Co12Si16B8Mo5P8 amorphous alloy.

  16. Effect of boron additions and processing on microstructure and mechanical properties of a titanium alloy Ti–6.5Al–3.3Mo–0.3Si

    Energy Technology Data Exchange (ETDEWEB)

    Imayev, V.M., E-mail: vimayev@mail.ru; Gaisin, R.A.; Imayev, R.M.

    2015-08-12

    The effects of boron additions in an amount of 0.1–2 wt%, thermomechanical processing and heat treatment on microstructure and mechanical properties of a two-phase titanium alloy Ti–6.5Al–3.3Mo–0.3Si alloy have been investigated. Depending on the boron amount, the materials under study were divided into two groups: (1) boron modified alloys containing ~0.1 wt% of boron and (2) discontinuously reinforced metal matrix Ti–TiB based composites containing 1.52 wt% of boron. Boron additions led to formation of TiB whiskers, which were predominantly located along boundaries of prior β-grains and α-colonies resulting in refined as-cast microstructure. Multiple 3D forging at T=650–700 °C applied for the boron modified alloys resulted in formation of ultrafine-grained microstructure and intensive breaking of TiB whiskers. Tensile properties of the Ti–6.5Al–3.3Mo–0.3Si–0.2 wt% B alloy after multiple 3D forging followed by β-heat treatment were found to be appreciably higher than those of the alloy free of boron after the same processing route that was ascribed to better controlling the β-grain size during β heat treatment. The composite materials were subjected to multiple isothermal 2D forging at T=950 °C that provided effective alignment of TiB whiskers while retaining their high aspect ratio. The hot forged composites demonstrated appreciably higher strength, creep resistance in comparison with those of the base alloy without drastic reduction in ductility. The effect of TiB whiskers orientation and morphology on the tensile properties of the composite materials is discussed.

  17. Synthesis, electronic transport and optical properties of Si:α-Fe2O3 single crystals

    NARCIS (Netherlands)

    Rettie, A.J.E.; Chemelewski, W.D.; Wygant, B.R.; Lindemuth, J.; Lin, J.F.; Eisenberg, D.; Brauer, C.S.; Johnson, T.J.; Beiswenger, T.N.; Ash, R.D.; Li, X.; Zhou, J.; Mullins, C.B.

    2016-01-01

    We report the synthesis of silicon-doped hematite (Si:alpha-Fe2O3) single crystals via chemical vapor transport, with Si incorporation on the order of 1019 cm(-3). The conductivity, Seebeck and Hall effect were measured in the basal plane between 200 and 400 K. Distinct differences in electron

  18. Reaction of LaB6 with MoSi2

    International Nuclear Information System (INIS)

    Ordan'yan, S.S.; Gardagina, E.N.; Barabanova, S.N.

    1989-01-01

    Investigation results of interaction in LaB 6 -MoSi 2 system within wide concentration and temperature ranges are presented. LaB 6 and MoSi 2 powders were preliminary squeezed out in vacuum at 1470 K. Presence of LaB 6 and MoSi 2 initial phases only is determined using X-ray pahse analysis of sintered and melted specimens of all compositions. Traces of MoB (probably, due to quick crystallization after melting and partial evaporation of silicon from the melt) are detected in some alloys exposed to melting

  19. Influence of Al addition on the thermal stability and mechanical properties of Fe76.5-xCu1Si13.5b9Alx amorphous alloys

    Directory of Open Access Journals (Sweden)

    Sun Y.Y.

    2012-01-01

    Full Text Available This paper fabricated Fe76.5-xCu1Si13.5B9Alx (x=0,1,2,3,5,7 at.% amorphous ribbons using singleroller melt-spinning method. The effect of Al content on the thermal stability and mechanical properties was investigated. The results indicated that Al addition have little effect on the amorphous formation ability of the alloys. On the other hand, increasing the Al content can substantially increase Tx2, which corresponds to the crystallization of Fe borides. Nanoindentation tests indicated that hardness of the alloys increase slightly with increasing the Al content, and Young’s modulus has a complicated relationship with the Al content.

  20. Molecular dynamics investigation of Si–B–N ceramics: effects of boron content

    International Nuclear Information System (INIS)

    Liao, Ningbo; Xue, Wei; Zhang, Miao

    2012-01-01

    Silicon boron nitride (SiBN) has the advantages of Si 3 N 4 at high temperatures and also advantageous anti-oxidation and mechanical properties. While the synthesis methods of this new material are limited to the sol–gel route, understanding the structural and mechanical properties of SiBN becomes essential in order to control the properties under fabrication. In this study, atomistic models of SiBN ceramics with different boron content were built by melt-quench technologies. Pair distribution function and angular distribution function were applied to study the structural properties, and tensile loading was applied in order to obtain the stress–strain curves and mechanical properties of SiBN. Phase separation of SiN-rich region and BN-rich region was observed for SiBN with different B content. With B content increasing, the BN-rich region tended to be larger and the SiN-rich region became smaller. Si 3 B 3 N 7 showed sharper and narrower peaks on distribution functions and larger Young's modulus than Si 3 BN 5 and Si 3 B 5 N 9 . (paper)

  1. Moissanite (SiC) with metal-silicide and silicon inclusions from tuff of Israel: Raman spectroscopy and electron microscope studies

    Science.gov (United States)

    Dobrzhinetskaya, Larissa; Mukhin, Pavel; Wang, Qin; Wirth, Richard; O'Bannon, Earl; Zhao, Wenxia; Eppelbaum, Lev; Sokhonchuk, Tatiana

    2018-06-01

    Here, we present studies of natural SiC that occurs in situ in tuff related to the Miocene alkaline basalt formation deposited in northern part of Israel. Raman spectroscopy, SEM and FIB-assisted TEM studies revealed that SiC is primarily hexagonal polytypes 4H-SiC and 6H-SiC, and that the 4H-SiC polytype is the predominant phase. Both SiC polytypes contain crystalline inclusions of silicon (Sio) and inclusions of metal-silicide with varying compositions (e.g. Si58V25Ti12Cr3Fe2, Si41Fe24Ti20Ni7V5Zr3, and Si43Fe40Ni17). The silicides crystal structure parameters match Si2TiV5 (Pm-3m space group, cubic), FeSi2Ti (Pbam space group, orthorhombic), and FeSi2 (Cmca space group, orthorhombic) respectively. We hypothesize that SiC was formed in a local ultra-reduced environment at respectively shallow depths (60-100 km), through a reaction of SiO2 with highly reducing fluids (H2O-CH4-H2-C2H6) arisen from the mantle "hot spot" and passing through alkaline basalt magma reservoir. SiO2 interacting with the fluids may originate from the walls of the crustal rocks surrounding this magmatic reservoir. This process led to the formation of SiC and accompanied by the reducing of metal-oxides to native metals, alloys, and silicides. The latter were trapped by SiC during its growth. Hence, interplate "hot spot" alkali basalt volcanism can now be included as a geological environment where SiC, silicon, and silicides can be found.

  2. Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

    International Nuclear Information System (INIS)

    Zeng, Xiangbin; Wen, Xixing; Sun, Xiaohu; Liao, Wugang; Wen, Yangyang

    2016-01-01

    Boron-doped zinc oxide (BZO) films were grown by metal organic chemical vapor deposition. The influence of B_2H_6 flow rate and substrate temperature on the microstructure, optical, and electrical properties of BZO films was investigated by X-ray diffraction spectrum, scanning electron microscope, optical transmittance spectrum, and Hall measurements. The BZO films with optical transmittance above 85% in the visible and infrared light range, resistivity of 0.9–1.0 × 10"−"3 Ω cm, mobility of 16.5–25.5 cm"2/Vs, and carrier concentration of 2.22.7 × 10"2"0 cm"−"3 were deposited under optimized conditions. The optimum BZO films were applied on the bifacial BZO/p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n"+-type a-Si:H/BZO heterojunction solar cell as both front and back transparent electrodes. Meanwhile, the bifacial heterojunction solar cell with indium tin oxide (ITO) as both front and back transparent electrodes was fabricated. The efficiencies of 17.788% (open-circuit voltage: 0.628 V, short-circuit current density: 41.756 mA/cm"2 and fill factor: 0.678) and 16.443% (open-circuit voltage: 0.590 V, short-circuit current density: 36.515 mA/cm"2 and fill factor: 0.762) were obtained on the a-Si/c-Si heterojunction solar cell with BZO and ITO transparent electrodes, respectively. - Highlights: • Boron-doped zinc oxide films with low resistivity were fabricated. • The boron-doped zinc oxide films have the high transmittance. • B-doped ZnO film was applied in a-Si:H/c-Si solar cell as transparent electrodes. • The a-Si:H/c-Si solar cell with efficiency of 17.788% was obtained.

  3. Effect of Si on the glass-forming ability, thermal stability and magnetic properties of Fe-Co-Zr-Mo-W-B alloys

    Energy Technology Data Exchange (ETDEWEB)

    Wang, W.-M. [Institute for Metallic Materials, IFW Dresden, P.O. 270016, Dresden D-01171 (Germany); Key Lab of Liquid Structure and Heredity of Materials, Shandong University, Jinan 250061 (China); Gebert, A. [Institute for Metallic Materials, IFW Dresden, P.O. 270016, Dresden D-01171 (Germany)], E-mail: a.gebert@ifw-dresden.de; Roth, S.; Kuehn, U.; Schultz, L. [Institute for Metallic Materials, IFW Dresden, P.O. 270016, Dresden D-01171 (Germany)

    2008-07-14

    This paper presents investigations on the effect of Si on the glass-forming ability, thermal stability and magnetic properties of the Fe-Co-Zr-Mo-W-B samples (group I: Fe{sub 60}Co{sub 8}Zr{sub 10}Mo{sub 5}W{sub 2}B{sub 15-x}Si{sub x}, 1 {<=} x {<=} 4; group II: Fe{sub 60}Co{sub 8}Zr{sub 10-x}Mo{sub 5}W{sub 2}B{sub 15}Si{sub x}, 0 {<=} x {<=} 4; group III: Fe{sub 60}Co{sub 8}Zr{sub 8}Mo{sub 5}W{sub 2}B{sub 17-x}Si{sub x}, 0 {<=} x {<=} 2) prepared by melt spinning, injection casting, and centrifugal casting methods. It is found that the glass-forming ability (GFA) of the alloys in group I is more deteriorated than that in group II, and that the alloys in group III can be cast into the rods of 1-3 mm diameter without crystalline reflections in their XRD patterns. For the amorphous ribbons and rods, a non-monotonic change of the nearest neighbour distance r{sub 1} with increasing Si content c{sub Si} was detected, which is parallel to that of the glass transition and crystallization temperatures T{sub g} and T{sub x}, but opposite to that of the magnetization at room temperature M{sub RT} and the Curie temperature T{sub c}. This correlation can be interpreted by a structure model presuming that iron atoms appear simultaneously in two types of local structures in the amorphous samples.

  4. Evolution of Fe environments in mechanically alloyed Fe–Nb–(B) compositions

    Energy Technology Data Exchange (ETDEWEB)

    Blázquez, J.S., E-mail: jsebas@us.es; Ipus, J.J.; Conde, C.F.; Conde, A.

    2014-12-05

    Highlights: • Nb is rapidly incorporated to the nanocrystalline FeNb(B) matrix. • B inclusions remains even after long milling times. • B is helpful to enhance the comminuting of crystallites. - Abstract: Nanocrystalline alloys of nominal composition Fe{sub 85}Nb{sub 5}B{sub 10} were produced by mechanical alloying from a mixture of elemental powders. Two commercial boron structures were used: amorphous and crystalline. In addition, a third composition Fe{sub 94.4}Nb{sub 5.6} was prepared for comparison. X-ray diffraction and Mössbauer spectroscopy were used to describe the evolution of the microstructure and Fe environments as a function of the milling time. Whereas Nb is rapidly incorporated into the nanocrystalline matrix, boron inclusions remain even after long milling times. The presence of boron is found to enhance the comminuting of crystallites.

  5. Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zeng, Xiangbin, E-mail: eexbzeng@mail.hust.edu.cn; Wen, Xixing; Sun, Xiaohu; Liao, Wugang; Wen, Yangyang

    2016-04-30

    Boron-doped zinc oxide (BZO) films were grown by metal organic chemical vapor deposition. The influence of B{sub 2}H{sub 6} flow rate and substrate temperature on the microstructure, optical, and electrical properties of BZO films was investigated by X-ray diffraction spectrum, scanning electron microscope, optical transmittance spectrum, and Hall measurements. The BZO films with optical transmittance above 85% in the visible and infrared light range, resistivity of 0.9–1.0 × 10{sup −3} Ω cm, mobility of 16.5–25.5 cm{sup 2}/Vs, and carrier concentration of 2.22.7 × 10{sup 20} cm{sup −3} were deposited under optimized conditions. The optimum BZO films were applied on the bifacial BZO/p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n{sup +}-type a-Si:H/BZO heterojunction solar cell as both front and back transparent electrodes. Meanwhile, the bifacial heterojunction solar cell with indium tin oxide (ITO) as both front and back transparent electrodes was fabricated. The efficiencies of 17.788% (open-circuit voltage: 0.628 V, short-circuit current density: 41.756 mA/cm{sup 2} and fill factor: 0.678) and 16.443% (open-circuit voltage: 0.590 V, short-circuit current density: 36.515 mA/cm{sup 2} and fill factor: 0.762) were obtained on the a-Si/c-Si heterojunction solar cell with BZO and ITO transparent electrodes, respectively. - Highlights: • Boron-doped zinc oxide films with low resistivity were fabricated. • The boron-doped zinc oxide films have the high transmittance. • B-doped ZnO film was applied in a-Si:H/c-Si solar cell as transparent electrodes. • The a-Si:H/c-Si solar cell with efficiency of 17.788% was obtained.

  6. On the correlation between the morphology of α and its crystallographic orientation relationship with TiB and β in boron-containing Ti–5Al–5Mo–5V–3Cr–0.5Fe alloy

    International Nuclear Information System (INIS)

    Nandwana, P.; Nag, S.; Hill, D.; Tiley, J.; Fraser, H.L.; Banerjee, R.

    2012-01-01

    While the role of borides on the microstructure of titanium alloys has been discussed in many previous reports, this paper presents the first experimental evidence of (i) the three-dimensional geometry of α precipitates confirming their equiaxed morphology, as determined by reconstruction of serially sectioned scanning electron microscopy images; and (i) the influence of the crystallographic orientation relationship between β, TiB and α phases on the morphology of α precipitates, investigated via detailed orientation microscopy studies on a boron-containing version of the commercial Ti–5Al–5Mo–5V–3Cr–0.5Fe alloy Ti5553.

  7. The Impact of Metallic Impurities on Minority Carrier Lifetime in High Purity N-type Silicon

    Science.gov (United States)

    Yoon, Yohan

    Boron-doped p-type silicon is the industry standard silicon solar cell substrate. However, it has serious limitations: iron boron (Fe-B) pairs and light induced degradation (LID). To suppress LID, the replacement of boron by gallium as a p-type dopant has been proposed. Although this eliminates B-O related defects, gallium-related pairing with iron, oxygen, and carbon can reduce lifetime in this material. In addition resistivity variations are more pronounced in gallium doped ingots, however Continuous-Czochralski (c-Cz) growth technologies are being developed to overcome this problem. In this work lifetime limiting factors and resistivity variations have been investigated in this material. The radial and axial variations of electrically active defects were observed using deep level transient spectroscopy (DLTS) these have been correlated to lifetime and resistivity variations. The DLTS measurements demonstrated that iron-related pairs are responsible for the lifetime variations. Specifically, Fe-Ga pairs were found to be important recombination sites and are more detrimental to lifetime than Fei. Typically n-type silicon has a higher minority carrier lifetime than p-type silicon with similar levels of contamination. That is because n-type silicon is more tolerant to metallic impurities, especially Fe. Also, it has no serious issues in relation to lifetime degradation, such as FeB pairs and light-induced degradation (LID). However, surface passivation of the p + region in p+n solar cells is much more problematic than the n+p case where silicon nitride provides very effective passivation of the cell. SiO2 is the most effective passivation for n type surfaces, but it does not work well on B-doped surfaces, resulting in inadequate performance. Al2O3 passivation layer suggested for B-doped emitters. With this surface passivation layer a 23.2 % conversion efficiency has been achieved. After this discovery n-type silicon is now being seriously considered for

  8. Microstructure, soft magnetic properties and applications of amorphous Fe-Co-Si-B-Mo-P alloy

    Directory of Open Access Journals (Sweden)

    Mariusz Hasiak

    2018-05-01

    Full Text Available DC thermomagnetic properties of Fe51Co12Si16B8Mo5P8 amorphous alloy in the as-quenched and after annealing below crystallization temperature are investigated. They are related to deviations in the microstructure as revealed by Mössbauer spectrometry. Study of AC magnetic properties, i.e. hysteresis loops, relative permeability and core losses versus maximum induction was aimed at obtaining optimal initial parameters for simulation process of a resonant transformer for a rail power supply converter. The results obtained from numerical analyses including core losses, winding losses, core mass, and dimensions were compared with the same parameters calculated for Fe-Si alloy and ferrite. Moreover, Steinmetz coefficients were also calculated for the as-quenched Fe51Co12Si16B8Mo5P8 amorphous alloy.

  9. Study of shallow junction formation by boron-containing cluster ion implantation of silicon and two-stage annealing

    Science.gov (United States)

    Lu, Xin-Ming

    Shallow junction formation made by low energy ion implantation and rapid thermal annealing is facing a major challenge for ULSI (ultra large scale integration) as the line width decreases down to the sub micrometer region. The issues include low beam current, the channeling effect in low energy ion implantation and TED (transient enhanced diffusion) during annealing after ion implantation. In this work, boron containing small cluster ions, such as GeB, SiB and SiB2, was generated by using the SNICS (source of negative ion by cesium sputtering) ion source to implant into Si substrates to form shallow junctions. The use of boron containing cluster ions effectively reduces the boron energy while keeping the energy of the cluster ion beam at a high level. At the same time, it reduces the channeling effect due to amorphization by co-implanted heavy atoms like Ge and Si. Cluster ions have been used to produce 0.65--2keV boron for low energy ion implantation. Two stage annealing, which is a combination of low temperature (550°C) preannealing and high temperature annealing (1000°C), was carried out to anneal the Si sample implanted by GeB, SiBn clusters. The key concept of two-step annealing, that is, the separation of crystal regrowth, point defects removal with dopant activation from dopant diffusion, is discussed in detail. The advantages of the two stage annealing include better lattice structure, better dopant activation and retarded boron diffusion. The junction depth of the two stage annealed GeB sample was only half that of the one-step annealed sample, indicating that TED was suppressed by two stage annealing. Junction depths as small as 30 nm have been achieved by two stage annealing of sample implanted with 5 x 10-4/cm2 of 5 keV GeB at 1000°C for 1 second. The samples were evaluated by SIMS (secondary ion mass spectrometry) profiling, TEM (transmission electron microscopy) and RBS (Rutherford Backscattering Spectrometry)/channeling. Cluster ion implantation

  10. Preparation of MoB and MoB-MoSi2 composites by combustion synthesis in SHS mode

    International Nuclear Information System (INIS)

    Yeh, C.L.; Hsu, W.S.

    2007-01-01

    Combustion synthesis in the mode of self-propagating high-temperature synthesis (SHS) was carried out in the Mo-B and Mo-B-Si systems for the preparation of molybdenum boride MoB and the composite of MoB-MoSi 2 from elemental powder compacts. Under a preheating temperature above 150 deg. C , the reaction of Mo with boron in the sample compact of Mo:B = 1:1 is characterized by a planar combustion front propagating in a self-sustaining and steady manner. As the preheating temperature or sample compaction density increased, combustion temperature was found to increase and the propagation rate of the combustion front was correspondingly enhanced. Moreover, the XRD analysis provides evidence of yielding nearly single-phase α-MoB from the Mo-B sample at equiatomic stoichiometry. In the synthesis of MoB-MoSi 2 composites, the starting stoichiometry of the Mo-B-Si powder compact was varied so as to produce the final composites containing 20-80 mol% MoB. It was also found the increase of flame-front velocity and combustion temperature with increasing MoB content formed in the composite. The composition analysis by XRD shows excellent conversion from the Mo-B-Si powder compact to the MoB-MoSi 2 composite through the SHS reaction; that is, in addition to a small amount of Mo 5 Si 3 , the as-synthesized composite is composed entirely of MoB and MoSi 2

  11. The nonaqueous inhibition of Fe-Co-B-Si amorphous electrodes: An a.c. impedance study in HCl solutions

    International Nuclear Information System (INIS)

    Habib, K.; Abdullah, A.

    1995-01-01

    An electrochemical study on Fe-Co-B-Si amorphous electrodes has been conducted. The study was focused on determining the electrochemical impedance spectroscopy (EIS) of four different alloys of Fe-Co-B-Si in various HCl acid solutions. The A.C. impedance and the capacitance of Fe-Co-B-Si, Co-Fe-Ni-B-Si, Co-Fe-Mn-B-Si, and Co-Fe-Ni-Mo-B-Si alloys were obtained in 25, 50, 75 and 100% of HCl acid at room temperature. Electrochemical parameters, i.e., impedance, were found to vary depending on additions of the Ni, Mn, Ni-Mo to Fe-Co-B-Si alloy, the acid concentration, and the nanoscopic surface roughness of the electrodes. Consequently, a correlation between the obtained data is established

  12. Electrical resistivity of nanocrystals in Fe-Al-Ga-P-B-Si-Cu alloy

    International Nuclear Information System (INIS)

    Pekala, K.; Jaskiewicz, P.; Nowinski, J.L.; Pekala, M.

    2003-01-01

    In new supercooled Fe 74 Al 4 Ga 2 P 11 B 4 Si 4 Cu 1 alloy the 10 nm size α-Fe(Si) nanocrystals are precipitated. Thermal stability is analyzed by the electron transport and magnetization measurements. Temperature variation of electrical resistivity of nanocrystals is determined and discussed for alloys with different initial crystalline fraction. Possible mechanism inhibiting the grain growth is presented

  13. Textured surface boron-doped ZnO transparent conductive oxides on polyethylene terephthalate substrates for Si-based thin film solar cells

    International Nuclear Information System (INIS)

    Chen Xinliang; Lin Quan; Ni Jian; Zhang Dekun; Sun Jian; Zhao Ying; Geng Xinhua

    2011-01-01

    Textured surface boron-doped zinc oxide (ZnO:B) thin films were directly grown via low pressure metal organic chemical vapor deposition (LP-MOCVD) on polyethylene terephthalate (PET) flexible substrates at low temperatures and high-efficiency flexible polymer silicon (Si) based thin film solar cells were obtained. High purity diethylzinc and water vapors were used as source materials, and diborane was used as an n-type dopant gas. P-i-n silicon layers were fabricated at ∼ 398 K by plasma enhanced chemical vapor deposition. These textured surface ZnO:B thin films on PET substrates (PET/ZnO:B) exhibit rough pyramid-like morphology with high transparencies (T ∼ 80%) and excellent electrical properties (Rs ∼ 10 Ω at d ∼ 1500 nm). Finally, the PET/ZnO:B thin films were applied in flexible p-i-n type silicon thin film solar cells (device structure: PET/ZnO:B/p-i-n a-Si:H/Al) with a high conversion efficiency of 6.32% (short-circuit current density J SC = 10.62 mA/cm 2 , open-circuit voltage V OC = 0.93 V and fill factor = 64%).

  14. Anomalous grain growth in nanocrystalline Fe73.5Cu1Nb3Su13.5B9 alloys

    DEFF Research Database (Denmark)

    Jiang, Jianzhong

    1997-01-01

    The grain growth of the FeSi phase during the crystallization process of the amorphous Fe73.5Cu1Nb3Si13.5B9 alloy was studied using transmission electron microscopy and x-ray diffractometry. An anomalous grain growth behaviour of the FeSi phase in the samples annealed in temperature range from 743...... to 823 K for one hour was observed, i.e. the grain size of the FeSi phase slightly decreases when the annealing temperature increases from 743 K ot 823 K. The mechanism of the anomalous grain growth may be due to the different nucleation and volume diffusion rates in the samples anneales at low and high...

  15. Moessbauer effect in pure and impurity doped FeSi2

    International Nuclear Information System (INIS)

    Blaauw, C.; Hanson, H.; Woude, F. van der

    1975-01-01

    Numerical values of the calculated and experimentally determined Moessbauer parameters for pure β-FeSi 2 and α-FeSi 2 are given. Temperature dependence of isomer shift and quadrupole splitting for the two Fe positions in β-FeSi 2 is presented. For α-FeSi 2 only average values are given. Spectra of Co- and Al-doped FeSi 2 recorded at 80, 293, 557 and 788 K were analyzed in the same manner as those of undoped FeSi 2 . The average values of isomer shift and quadrupole splitting in Co- and Al-doped β-FeSi 2 (α-Fesi 2 ) were compared to those found in undoped β-FeSi 2 (α-FeSi 2 ). All data were based on the room temperature spectra. Changes in Moessbauer parameters of doped samples relative to undoped ones were generally small, being of the order of hundredths of mm/sec. (Z.S.)

  16. Silicon induced Fe deficiency affects Fe, Mn, Cu and Zn distribution in rice (Oryza sativa L.) growth in calcareous conditions.

    Science.gov (United States)

    Carrasco-Gil, Sandra; Rodríguez-Menéndez, Sara; Fernández, Beatriz; Pereiro, Rosario; de la Fuente, Vicenta; Hernandez-Apaolaza, Lourdes

    2018-04-01

    A protective effect by silicon in the amelioration of iron chlorosis has recently been proved for Strategy 1 species, at acidic pH. However in calcareous conditions, the Si effect on Fe acquisition and distribution is still unknown. In this work, the effect of Si on Fe, Mn, Cu and Zn distribution was studied in rice (Strategy 2 species) under Fe sufficiency and deficiency. Plants (+Si or-Si) were grown initially with Fe, and then Fe was removed from the nutrient solution. The plants were then analysed using a combined approach including LA-ICP-MS images for each element of interest, the analysis of the Fe and Si concentration at different cell layers of root and leaf cross sections by SEM-EDX, and determining the apoplastic Fe, total micronutrient concentration and oxidative stress indexes. A different Si effect was observed depending on plant Fe status. Under Fe sufficiency, Si supply increased Fe root plaque formation, decreasing Fe concentration inside the root and increasing the oxidative stress in the plants. Therefore, Fe acquisition strategies were activated, and Fe translocation rate to the aerial parts was increased, even under an optimal Fe supply. Under Fe deficiency, +Si plants absorbed Fe from the plaque more rapidly than -Si plants, due to the previous activation of Fe deficiency strategies during the growing period (+Fe + Si). Higher Fe plaque formation due to Si supply during the growing period reduced Fe uptake and could activate Fe deficiency strategies in rice, making it more efficient against Fe chlorosis alterations. Silicon influenced Mn and Cu distribution in root. Copyright © 2018 Elsevier Masson SAS. All rights reserved.

  17. Hot tensile behaviour in silicon-killed boron microalloyed steels

    Science.gov (United States)

    Chown, Lesley H.; Cornish, Lesley A.

    2017-10-01

    Low carbon steel for drawing and cold heading applications should have low strength, high ductility and low strain ageing rates. To achieve this, nitrogen must be removed from solid solution, which can be done by low additions of boron. A wire producer had been experiencing occasional problems with severe cracking on silicon-killed, boron steel billets during continuous casting, but the solution was not obvious. Samples from four billets, each from different casts, were removed for analysis and testing. The tested steel compositions were within the specification limits, with boron to nitrogen ratios of 0.40-1.19. Hot ductility testing was performed on a Gleeble 1500 using parameters approximating the capabilities of this particular billet caster. The steel specimens were subjected to in situ melting, then cooled at a rate of 2 C.s-1 to temperatures in the range 750-1250°C, where they were then pulled to failure at a strain rate of 8x10-4 s-1. In this work, it was found that both the boron to nitrogen ratio and the manganese to sulphur ratio influenced the hot ductility and hence the crack susceptibility. Excellent hot ductility was found for B:N ratios above 1.0, which confirmed that the B:N ratio should be above a stoichiometric value of 0.8 to remove all nitrogen from solid solution. TEM analysis showed that coarse BN precipitates nucleated on other precipitates, such as (Fe,Mn)S, which have relatively low melting points, and are detrimental to hot ductility. Low Mn:S ratios of 10 - 12 were shown to promote precipitation of FeS, so a Mn:S > 14 was recommended. A narrower billet surface temperature range for straightening was recommended to prevent transverse surface cracking. Additionally, analysis of industrial casting data showed that the scrap percentage due to transverse cracking increased significantly for Mn:S < 14. An exponential decay relationship between the manganese to sulphur ratio and the average scrap percentage due to transverse cracking was

  18. Defects in boron ion implanted silicon

    International Nuclear Information System (INIS)

    Wu, W.K.

    1975-05-01

    The crystal defects formed after post-implantation annealing of B-ion-implanted Si irradiated at 100 keV to a moderate dose (2 x 10 14 /cm 2 ) were studied by transmission electron microscopy. Contrast analysis and annealing kinetics show at least two different kinds of linear rod-like defects along broken bracket 110 broken bracket directions. One kind either shrinks steadily remaining on broken bracket 110 broken bracket at high temperatures (greater than 850 0 C), or transforms into a perfect dislocation loop which rotates toward broken bracket 112 broken bracket perpendicular to its Burgers vector. The other kind shrinks steadily at moderate temperatures (approximately 800 0 C). The activation energy for shrinkage of the latter (3.5 +- 0.1 eV) is the same as that for B diffusion in Si, suggesting that this linear defect is a boron precipitate. There also exist a large number of perfect dislocation loops with Burgers vector a/2broken bracket 110 broken bracket. The depth distribution of all these defects was determined by stereomicroscopy. The B precipitates lying parallel to the foil surfaces are shown to be at a depth of about 3500 +- 600 A. The loops are also at the same depth, but with a broader spread, +-1100 A. Si samples containing B and samples containing no B (P-doped) were irradiated in the 650-kV electron microscope. Irradiation at 620 0 C resulted in the growth of very long linear defects in the B-doped samples but not in the others, suggesting that at 620 0 C Si interstitials produced by the electron beam replace substitutional B some of which precipitates in the form of long rods along broken bracket 110 broken bracket. (DLC)

  19. Structure of Ni-rich Ni--Cr--B--Si coating alloys

    International Nuclear Information System (INIS)

    Knotek, O.; Lugscheider, E.; Reimann, H.

    1975-01-01

    The structures of quaternary, nickel-rich Ni--Cr--B--Si alloys were analyzed at a constant boron content of 10 at. percent and a temperature of 850 0 C. The composition range for silicide formation was determined. In these quaternary alloys, known binary nickel silicides, nickel and chromium borides, and the ternary silico-boride Ni 6 Si 2 B were confirmed. A new composition for the W 5 Si 3 -type phase in the Ni--B--Si system was proposed. (U.S.)

  20. Pertumbuhan Bibit Kelapa Sawit (Elais guineensis pada Beberapa Waktu dan Arah Aplikasi Boron (B dan Silikon (Si Melalui Daun

    Directory of Open Access Journals (Sweden)

    Ageng Kaloko

    2015-02-01

    Full Text Available Study entitled 'Growth and Drought Resistance Seed Oil Palm (Elaeis guineensis in Multiple Time and Direction Applications Boron (B and Silicon (Si through Leaves' aims to study the effect of B and Si on physiological processes and growth of oil palm seedlings experiencing drought stress and get a way and timing of B and Si is effective to reduce the effect of drought on the decline of physiological processes and growth of oil palm seedlings, Has been implemented in the hamlet Bendosari Madurejo village, Prambanan subdistrict, Sleman; Laboratory of Plant Sciences Faculty of Agriculture, Plant Anatomy Laboratory of the Faculty of Biology and Integrated Research and Testing Laboratory (LPPT Gadjah Mada University Yogyakarta in March to December of 2012. Research using a complete randomized block design (RAKL factorial 3 x 3 1 to 3 blocks as replications. The first factor is the way fertilization, the second factor is the time of fertilization and added a comparison (control without any fertilization treatment. The data analyzed were obtained using Varian Analysis (ANOVA at the level of 5%, and followed by a test of least significant difference LSD. The results showed that the uptake and increased significantly with the application and the leaves by spraying in the morning, afternoon and evening through the direction of the bottom surface, the top and bottom of leaves. However, absorption of Si is only able to increase if the source of Si fertilizer applied by spraying the leaves through a downward direction on the surface of leaves in the evening. Oil palm seedlings can be improved resistance to drought stress with an indication of the form of increasing scores lignin and suberin in roots network as well as the size of the diameter of the rod when compared with control through the application of fertilizer source of B and Si on the leaves by spraying in the morning, afternoon and evening through direction of the bottom surface, the top and bottom

  1. Deformation behavior of an electrodeposited nano-Ni/amorphous Fe78Si9B13 laminated composite sheet

    Directory of Open Access Journals (Sweden)

    Zhang Kaifeng

    2015-01-01

    Full Text Available A nano-Ni/amorphous Fe78Si9B13 composite sheet was prepared in the form of three-ply (Ni-Fe78Si9B13-Ni laminated structure by an electrodeposition method. The average grain size of Ni layers is about 50 nm. The interface of laminated composite was investigated with SEM equipped with energy dispersive scanning (EDS and line analysis technique. The laminated composite has a good interfacial bonding between amorphous layer and nano-Ni layers due to the mutual diffusion of atoms in Fe78Si9B13 and Ni layers during the process of electrodeposition. A maximum elongation of 115.5% was obtained when the volume fraction of nano-Ni layers (VNi was 0.77, which is greatly higher than that of monolithic amorphous Fe78Si9B13 ribbon (36.3% tested under the same conditions. Bulging tests were carried out to evaluate plastic forming properties of the Fe78Si9B13/Ni laminated composite. Under the condition of 450 °C, 4.0 MPa and 30 min, a good bulging part with the relative bulging height (RBH of 0.4 was obtained.

  2. Core–shell structured FeSiAl/SiO{sub 2} particles and Fe{sub 3}Si/Al{sub 2}O{sub 3} soft magnetic composite cores with tunable insulating layer thicknesses

    Energy Technology Data Exchange (ETDEWEB)

    Fan, Xi’an, E-mail: groupfxa@163.com [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Wang, Jian, E-mail: snove418562@163.com [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Wu, Zhaoyang, E-mail: wustwuzhaoyang@163.com [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Li, Guangqiang, E-mail: ligq-wust@mail.wust.edu.cn [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China)

    2015-11-15

    Graphical abstract: - Highlights: • FeSiAl/SiO{sub 2} core–shell particles and Fe{sub 3}Si/Al{sub 2}O{sub 3} composite cores were prepared. • SiO{sub 2} surrounding FeSiAl were replaced by Al{sub 2}O{sub 3} during sintering process. • Fe{sub 3}Si particles were separated by Al{sub 2}O{sub 3} with tunable thickness in composite cores. • Fe{sub 3}Si/Al{sub 2}O{sub 3} had lower core loss and better frequency stability than FeSiAl core. • The insulating layer between ferromagnetic particles can reduce core loss. - Abstract: FeSiAl/SiO{sub 2} core–shell particles and Fe{sub 3}Si/Al{sub 2}O{sub 3} composite cores with tunable insulating layer thicknesses have been synthesized via a modified Stöber method combined with following high temperature sintering process. Most of the conductive FeSiAl particles could be coated by insulating SiO{sub 2} using the modified Stöber method. During the sintering process, the reaction 4Al + 3SiO{sub 2} ≣ 2α-Al{sub 2}O{sub 3} + 3Si took place and the new Fe{sub 3}Si/Al{sub 2}O{sub 3} composite was formed. The Fe{sub 3}Si/Al{sub 2}O{sub 3} composite cores displayed more excellent soft magnetic properties, better frequency stability at high frequencies, much higher resistivity and lower core loss than the raw FeSiAl core. Based on this, several types of FeSiAl/SiO{sub 2} particles and Fe{sub 3}Si/Al{sub 2}O{sub 3} composite cores with tunable insulating layer thicknesses were selectively prepared by simply varying TEOS contents. The thickness of Al{sub 2}O{sub 3} insulating layer and resistivity of Fe{sub 3}Si/Al{sub 2}O{sub 3} composite cores increased with increasing the TEOS contents, while the permeability and core loss changed in the opposite direction.

  3. Hysteresis properties of conventionally annealed and Joule-heated nanocrystalline Fe73.5Cu1Nb3Si13.5B9 alloys

    International Nuclear Information System (INIS)

    Tiberto, P.; Basso, V.; Beatrice, C.; Bertotti, G.

    1996-01-01

    The dependence of magnetic properties on the thermal treatment used to induce the amorphous-to-nanocrystalline transformation in Fe 73.5 Cu 1 Nb 3 Si 13.5 B 9 alloy has been studied. Quasi-static hysteresis loops and initial permeability measurements were performed on nanocrystalline samples obtained by conventional annealing and Joule heating. A comparison between the magnetic properties of nanocrystalline samples obtained by the two heating procedures is presented. (orig.)

  4. Ferromagnetic resonance studies on (Co40Fe40B20)x(SiO2)1-x granular magnetic films

    International Nuclear Information System (INIS)

    Yildiz, F.; Kazan, S.; Aktas, B.; Tarapov, S.I.; Tagirov, L.; Granovsky, B.

    2006-01-01

    Magnetic properties of granular (Co 40 Fe 40 B 20 ) x (SiO 2 ) 1-x thin films (x=0.37-0.53) have been studied by ferromagnetic resonance (FMR) technique. Samples have been prepared by ion-beam deposition of Co-Fe-B particles and SiO 2 on sitall ceramic substrate. The FMR measurements have been done for different orientations of DC magnetic field with respect to the sample plane. It was found that the deduced value of effective magnetization from FMR data of the thin granular film is reduced by the volume-filling factor of the bulk saturation magnetization. The overall magnetization changes from 152 to 515G depending on the ratio of the magnetic nanoparticles in the SiO 2 matrix. From angular measurements an induced in-plane uniaxial anisotropy has been obtained due to the preparation of the film conditions as well

  5. Influence of Microstructure on Microhardness of Fe81Si4B13C2 Amorphous Alloy after Thermal Treatment

    Czech Academy of Sciences Publication Activity Database

    Minić, Dragica, M.; Blagojević, V.; Minić, Dušan M.; Gavrilović, A.; Rafailović, L.; Žák, Tomáš

    42A, č. 13 (2011), s. 4106-4112 ISSN 1073-5623 R&D Projects: GA MŠk(CZ) 1M0512 Institutional research plan: CEZ:AV0Z2041904 Keywords : bulk metallic-glass * mechanical properties * Fe81B13SI4C2 alloy * B alloys * alpha-Fe * crystallization * phase * nanocrystallization * behavior Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.545, year: 2011

  6. Study of boron detection limit using the in-air PIGE set-up at LAMFI-USP

    International Nuclear Information System (INIS)

    Moro, M. V.; Silva, T. F.; Trindade, G. F.; Added, N.; Tabacniks, M. H.

    2014-01-01

    The quantification of small amounts of boron in materials is of extreme importance in different areas of materials science. Boron is an important contaminant and also a silicon dopant in the semiconductor industry. Boron is also extensively used in nuclear power plants, either for neutron shielding or for safety control and boron is an essential nutrient for life, either vegetable or animal. The production of silicon solar cells, by refining metallurgical-grade silicon (MG-Si) requires the control and reduction of several silicon contaminants to very low concentration levels. Boron is one of the contaminants of solar-grade silicon (SG-Si) that must be controlled and quantified at sub-ppm levels. In the metallurgical purification, boron quantification is usually made by Inductive Coupled Plasma Mass Spectrometry, (ICP-MS) but the results need to be verified by an independent analytical method. In this work we present the results of the analysis of silicon samples by Particle Induced Gamma-Ray Emission (PIGE) aiming the quantification of low concentrations of boron. PIGE analysis was carried out using the in-air external beam line of the Laboratory for Materials Analysis with Ion Beams (LAMFI-USP) by the 10 B(p,αγ( 7 Be nuclear reaction, and measuring the 429 keV γ-ray. The in-air PIGE measurements at LAMFI have a quantification limit of the order of 10 16 at/cm 2

  7. Study of boron detection limit using the in-air PIGE set-up at LAMFI-USP

    Science.gov (United States)

    Moro, M. V.; Silva, T. F.; Trindade, G. F.; Added, N.; Tabacniks, M. H.

    2014-11-01

    The quantification of small amounts of boron in materials is of extreme importance in different areas of materials science. Boron is an important contaminant and also a silicon dopant in the semiconductor industry. Boron is also extensively used in nuclear power plants, either for neutron shielding or for safety control and boron is an essential nutrient for life, either vegetable or animal. The production of silicon solar cells, by refining metallurgical-grade silicon (MG-Si) requires the control and reduction of several silicon contaminants to very low concentration levels. Boron is one of the contaminants of solar-grade silicon (SG-Si) that must be controlled and quantified at sub-ppm levels. In the metallurgical purification, boron quantification is usually made by Inductive Coupled Plasma Mass Spectrometry, (ICP-MS) but the results need to be verified by an independent analytical method. In this work we present the results of the analysis of silicon samples by Particle Induced Gamma-Ray Emission (PIGE) aiming the quantification of low concentrations of boron. PIGE analysis was carried out using the in-air external beam line of the Laboratory for Materials Analysis with Ion Beans (LAMFI-USP) by the 10B ( p ,αγ(7Be nuclear reaction, and measuring the 429 keV γ-ray. The in-air PIGE measurements at LAMFI have a quantification limit of the order of 1016 at/cm2.

  8. Structural and Physical Properties of Fe2O3-B2O3-V2O5 Glasses

    Directory of Open Access Journals (Sweden)

    Virender Kundu

    2008-01-01

    Full Text Available The structural and physical properties of xFe2O3-(40-x B2O3-60V2O5  (0≤x≤20 glass system have been investigated. The samples were prepared by normal melt-quench technique. The structural changes were inferred by means of FTIR by monitoring the infrared (IR spectra in the spectral range 600–4000 cm-1. The absence of boroxol ring (806 cm-1 in the present glass system suggested that these glasses consist of randomly connected BO3 and BO4 units. The conversion of BO3 to BO4 and VO5 to VO4 tetrahedra along with the formation of non-bridging oxygen's (NBOs attached to boron and vanadium takes place in the glasses under investigation. The density and molar volume of the present glass system were found to depend on Fe2O3 content. DC conductivity of the glass system has been determined in the temperature range 310–500 K. It was found that the general behavior of electrical conductivity was similar for all glass compositions and found to increase with increasing iron content. The parameters such as activation energy, average separation between transition metal ions (TMIs, polaron radius, and so forth have been calculated in adiabatic region and are found consistent with Mott's model of phonon-assisted polaronic hopping.

  9. Synthesis of Mo5SiB2 based nanocomposites by mechanical alloying and subsequent heat treatment

    International Nuclear Information System (INIS)

    Abbasi, A.R.; Shamanian, M.

    2011-01-01

    Research highlights: → α-Mo-Mo 5 SiB 2 nanocomposite was produced after 20 h milling of Mo-Si-B powders. → Heat treatment of 5 h MAed powders led to the formation of boride phases. → Heat treatment of 10 h MAed powders led to the formation of Mo 5 SiB 2 phase. → By increasing heat treatment time, quantity of Mo 5 SiB 2 phase increased. → 5 h heat treatment of 20 h MAed powders led to the formation of Mo 5 SiB 2 -based composite. - Abstract: In this study, systematic investigations were conducted on the synthesis of Mo 5 SiB 2 -based alloy by mechanical alloying and subsequent heat treatment. In this regard, Mo-12.5 mol% Si-25 mol% B powder mixture was milled for different times. Then, the mechanically alloyed powders were heat treated at 1373 K for 1 h. The phase transitions and microstructural evolutions of powder particles during mechanical alloying and heat treatment were studied by X-ray diffractometry and scanning electron microscopy. The results showed that the phase evolutions during mechanical alloying and subsequent heat treatment are strongly dependent on milling time. After 10 h of milling, a Mo solid solution was formed, but, no intermetallic phases were detected at this stage. However, an α-Mo-Mo 5 SiB 2 nanocomposite was formed after 20 h of milling. After heat treatment of 5 h mechanically alloyed powders, small amounts of MoB and Mo 2 B were detected and α-Mo-MoB-Mo 2 B composite was produced. On the other hand, heat treatment of 10 h and 20 h mechanically alloyed powders led to the formation of an α-Mo-Mo 5 SiB 2 -MoSi 2 -Mo 3 Si composite. At this point, there is a critical milling time (10 h) for the formation of Mo 5 SiB 2 phase after heat treatment wherein below that time, boride phase and after that time, Mo 5 SiB 2 phase are formed. In the case of 20 h mechanically alloyed powders, by increasing heat treatment time, not only the quantity of α-Mo was reduced and the quantity of Mo 5 SiB 2 was increased, but also new boride

  10. Synthesis of Fe5C2@SiO2 core@shell nanoparticles as a potential candidate for biomedical application

    Science.gov (United States)

    Ahmadpoor, Fatemeh; Shojaosadati, Seyed Abbas; Delavari H, Hamid; Christiansen, Gunna; Saber, Reza

    2018-05-01

    A new strategy for water-dispersibility of hydrophobic carbide nanostructures was proposed. In this regard, hydrophobic Fe5C2 nanoparticles (NPs) with size ranging 25–40 nm were synthesized and coated with 12–15 nm silica shell for biomedical applications. X-ray diffraction (XRD) results revealed that Fe5C2 NPs with monoclinic structure were successfully prepared. The crystalline structure of Fe5C2 NPs was remained unchanged and saturation magnetization of core remained nearly constant after coating with silica shell. Moreover, Raman spectroscopy identified D-band of amorphous carbon shells which was also confirmed by transmission electron microscopy (TEM). Finally, Fe5C2@SiO2 core@shell NPs demonstrated no significant cytotoxicity and appropriate heat generating which makes them a promising candidate for magnetic fluid hyperthermia applications.

  11. Al-Si/B{sub 4}C composite coatings on Al-Si substrate by plasma spray technique

    Energy Technology Data Exchange (ETDEWEB)

    Sarikaya, Ozkan [Sakarya University, Faculty of Engineering, Department of Mechanical Engineering, Esentepe Campus, Sakarya 54187 (Turkey); Anik, Selahaddin [Sakarya University, Faculty of Engineering, Department of Mechanical Engineering, Esentepe Campus, Sakarya 54187 (Turkey); Aslanlar, Salim [Sakarya University, Faculty of Technical Education, Department of Mechanical Engineering, Esentepe Campus, Sakarya 54187 (Turkey); Cem Okumus, S. [Sakarya University, Faculty of Engineering, Department of Metallurgical and Materials Engineering, Esentepe Campus, Sakarya 54187 (Turkey); Celik, Erdal [Dokuz Eylul University, Engineering Faculty, Department of Metallurgical and Materials Engineering, Buca, Izmir 35160 (Turkey)]. E-mail: erdal.celik@deu.edu.tr

    2007-07-01

    Plasma-sprayed coatings of Al-Si/B{sub 4}C have been prepared on Al-Si piston alloys for diesel engine motors. The Al-Si/B{sub 4}C composite powders including 5-25 wt% B{sub 4}C were prepared by mixing and ball-milling processes. These powders were deposited on Al-Si substrate using an atmospheric plasma spray technique. The coatings have been characterised with respect to phase composition, microstructure, microhardness, bond strength and thermal expansion. It was found that Al, Si, B{sub 4}C and Al{sub 2}O{sub 3} phases were determined in the coatings with approximately 600 {mu}m thick by using X-ray diffraction analysis. Scanning electron microscope observation revealed that boron carbide particles were uniformly distributed in composite coatings and B{sub 4}C particles were fully wetted by Al-Si alloy. Also, no reaction products were observed in Al-Si/B{sub 4}C composite coatings. It was found that surface roughness, porosity, bond strength and thermal expansion coefficient of composite coatings decreased with increasing fraction of the boron carbide particle. It was demonstrated that the higher the B{sub 4}C content, the higher the hardness of coatings because the hardness of B{sub 4}C is higher than that of Al-Si.

  12. Diffusion modelling of low-energy ion-implanted BF{sub 2} in crystalline silicon: Study of fluorine vacancy effect on boron diffusion

    Energy Technology Data Exchange (ETDEWEB)

    Marcon, J. [Laboratoire Electronique Microtechnologie et Instrumentation (LEMI), University of Rouen, 76821 Mont Saint Aignan (France)], E-mail: Jerome.Marcon@univ-rouen.fr; Merabet, A. [Laboratoire de Physique et Mecanique des Materiaux Metalliques, Departement d' O.M.P., Faculte des Sciences de l' Ingenieur, Universite de Setif, 19000 Setif (Algeria)

    2008-12-05

    We have investigated and modelled the diffusion of boron implanted into crystalline silicon in the form of boron difluoride BF{sub 2}{sup +}. We have used published data for BF{sub 2}{sup +} implanted with an energy of 2.2 keV in crystalline silicon. Fluorine effects are considered by using vacancy-fluorine pairs which are responsible for the suppression of boron diffusion in crystalline silicon. Following Uematsu's works, the simulations satisfactory reproduce the SIMS experimental profiles in the 800-1000 deg. C temperature range. The boron diffusion model in silicon of Uematsu has been improved taking into account the last experimental data.

  13. Oxidation protection of multilayer CVD SiC/B/SiC coatings for 3D C/SiC composite

    International Nuclear Information System (INIS)

    Liu Yongsheng; Cheng Laifei; Zhang Litong; Wu Shoujun; Li Duo; Xu Yongdong

    2007-01-01

    A CVD boron coating was introduced between two CVD SiC coating layers. EDS and XRD results showed that the CVD B coating was a boron crystal without other impurity elements. SEM results indicated that the CVD B coating was a flake-like or column-like crystal with a compact cross-section. The crack width in the CVD SiC coating deposited on CVD B is smaller than that in a CVD SiC coating deposited on CVD SiC coating. After oxidation at 700 deg. C and 1000 deg. C, XRD results indicated that the coating was covered by product B 2 O 3 or B 2 O 3 .xSiO 2 film. The cracks were sealed as observed by SEM. There was a large amount of flake-like material on hybrid coating surface after oxidation at 1300 deg. C. Oxidation weight loss and residual flexural strength results showed that hybrid SiC/B/SiC multilayer coating provided better oxidation protection for C/SiC composite than a three layer CVD SiC coating at temperatures from 700 deg. C to 1000 deg. C for 600 min, but worse oxidation protection above 1000 deg. C due to the large amount of volatilization of B 2 O 3 or B 2 O 3 .xSiO 2

  14. Segregation gettering by implantation-formed cavities and B-Si precipitates in silicon

    International Nuclear Information System (INIS)

    Myers, S.M.; Petersen, G.A.; Follstaedt, D.M.

    1998-01-01

    The authors show that Fe, Co, Cu, and Au in Si undergo strong segregation gettering to cavities and B-Si precipitates formed by He or B ion implantation and annealing. The respective mechanisms are argued to be chemisorption on the cavity walls and occupation of solution sites within the disordered, B-rich, B-Si phase. The strengths of the reactions are evaluated, enabling prediction of gettering performance

  15. Silicon Effects on Properties of Melt Infiltrated SiC/SiC Composites

    Science.gov (United States)

    Bhatt, Ramakrishna T.; Gyekenyesi, John Z.; Hurst, Janet B.

    2000-01-01

    Silicon effects on tensile and creep properties, and thermal conductivity of Hi-Nicalon SiC/SiC composites have been investigated. The composites consist of 8 layers of 5HS 2-D woven preforms of BN/SiC coated Hi-Nicalon fiber mats and a silicon matrix, or a mixture of silicon matrix and SiC particles. The Hi-Nicalon SiC/silicon and Hi-Nicalon SiC/SiC composites contained about 24 and 13 vol% silicon, respectively. Results indicate residual silicon up to 24 vol% has no significant effect on creep and thermal conductivity, but does decrease the primary elastic modulus and stress corresponding to deviation from linear stress-strain behavior.

  16. Electronic structure of LaFe{sub 2}X{sub 2} (X = Si,Ge)

    Energy Technology Data Exchange (ETDEWEB)

    Hase, I., E-mail: i.hase@aist.go.jp [Electronics and Photonics Research Institute, AIST, Tsukuba, Ibaraki 305-8568 (Japan); Yanagisawa, T. [Electronics and Photonics Research Institute, AIST, Tsukuba, Ibaraki 305-8568 (Japan)

    2011-11-15

    We have calculated the electronic structure of LaFe{sub 2}Si{sub 2} and LaFe{sub 2}Ge{sub 2} from first-principles. The obtained Fermi surfaces of LaFe{sub 2}Si{sub 2} and LaFe{sub 2}Ge{sub 2} resemble those of LaRu{sub 2}Ge{sub 2}, which well explains the result of the dHvA experiments of CeRu{sub 2}Ge{sub 2}. Their density of states curves show the common feature with CaFe{sub 2}As{sub 2}. D(E{sub F}) strongly depends on the distortion of the FeX{sub 4} tetrahedra and/or the height of the X atom, as also found in iron-pnictide system. Recently found iron-pnictide superconductor (Ba,K)Fe{sub 2}As{sub 2} and the heavy-fermion superconductor CeCu{sub 2}Si{sub 2} both have the same crystal structure. In this paper we have calculated the electronic structure of LaFe{sub 2}Si{sub 2} and LaFe{sub 2}Ge{sub 2} from first-principles. These compounds also have the same crystal structure and closely related to both of (Ba,K)Fe{sub 2}As{sub 2} and CeRu{sub 2}Ge{sub 2}. The obtained Fermi surfaces of LaFe{sub 2}Si{sub 2} and LaFe{sub 2}Ge{sub 2} resemble those of LaRu{sub 2}Ge{sub 2}, which are already found that they well explain the results of the dHvA experiments of CeRu{sub 2}Ge{sub 2}. Their density of states curves show the common feature with CaFe{sub 2}As{sub 2}. The density of states at the Fermi level strongly depends on the distortion of the FeX{sub 4} tetrahedra and/or the height of the X atom from the two-dimensional Fe plane, as also found in iron-pnictide system. The electronic specific heat coefficient is 11.8 mJ/mol K{sup 2} for LaFe{sub 2}Si{sub 2} and 12.5 mJ/mol K{sup 2} for LaFe{sub 2}Ge{sub 2}, which is about 1/3 and 1/2 of experimental results, respectively.

  17. Fabrication of sandwich-type MgB{sub 2}/Boron/MgB{sub 2} Josephson junctions with rapid annealing method

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Song; Wang, Xu; Ma, Junli; Cui, Ruirui; Deng, Chaoyong, E-mail: cydeng@gzu.edu.cn

    2015-11-15

    Sandwich-type MgB{sub 2}/Boron/MgB{sub 2} Josephson junctions were fabricated using magnetron sputtering system. The rapid-anneal process was adopted to replace traditional way of annealing, trying to solve the problem of interdiffusion and oxidation with multilayer films. The boron film was used as barrier layer to avoid the introduction of impurities and improve reproducibility of the junctions. The bottom MgB{sub 2} thin films deposited on c-plane sapphire substrate exhibits a critical temperature T{sub C} of 37.5 K and critical current density J{sub C} at 5 K of 8.7 × 10{sup 6} A cm{sup −2}. From the XRD pattern, the bottom MgB{sub 2} thin film shows c-axis orientation, whereas the top MgB{sub 2} became polycrystalline as Boron barrier layer grown thicker. Therefore, all junction samples show lower T{sub C} than single MgB{sub 2} thin film. The junctions exhibit excellent quasiparticle characteristics with ideal dependence on temperature and Boron barrier thickness. Subharmonic gap structure was appeared in conductance characteristics, which was attributed to the multiple Andreev reflections (MAR). The result demonstrates great promise of this new fabrication technology for MgB{sub 2} Josephson junction fabrication. - Highlights: • Sandwich-type MgB{sub 2}/Boron/MgB{sub 2} Josephson junctions were fabricated. • The junctions were annealed after deposition with the rapid-anneal process. • The highest critical current is 25.3 mA at 5 K and remains non-zero near 25 K. • Subharmonic gap features can be observed in the dI/dV – V curves.

  18. Corrosion resistance of sintered NdFeB coated with SiC/Al bilayer thin films by magnetron sputtering

    International Nuclear Information System (INIS)

    Huang, Yiqin; Li, Heqin; Zuo, Min; Tao, Lei; Wang, Wei; Zhang, Jing; Tang, Qiong; Bai, Peiwen

    2016-01-01

    The poor corrosion resistance of sintered NdFeB imposes a great challenge in industrial applications. In this work, the SiC/Al bilayer thin films with the thickness of 510 nm were deposited on sintered NdFeB by magnetron sputtering to improve the corrosion resistance. A 100 nm Al buffer film was used to reduce the internal stress between SiC and NdFeB and improve the surface roughness of the SiC thin film. The morphologies and structures of SiC/Al bilayer thin films and SiC monolayer film were investigated with FESEM, AFM and X-ray diffraction. The corrosion behaviors of sintered NdFeB coated with SiC monolayer film and SiC/Al bilayer thin films were analyzed by polarization curves. The magnetic properties were measured with an ultra-high coercivity permanent magnet pulse tester. The results show that the surface of SiC/Al bilayer thin films is more compact and uniform than that of SiC monolayer film. The corrosion current densities of SiC/Al bilayer films coated on NdFeB in acid, alkali and salt solutions are much lower than that of SiC monolayer film. The SiC/Al bilayer thin films have little influence to the magnetic properties of NdFeB. - Highlights: • The same thick Al, SiC and SiC/Al films are deposited on NdFeB by magnetron sputtering. • 510 nm SiC/Al bilayer films can improve the corrosion resistance of the NdFeB evidently. • Al buffer layer improves effectively the surface roughness of the SiC thin film. • SiC/Al bilayer films do not deteriorate the magnetic properties of NdFeB.

  19. Corrosion resistance of sintered NdFeB coated with SiC/Al bilayer thin films by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Yiqin [School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009 (China); Li, Heqin, E-mail: lhqjs@hfut.edu.cn [School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009 (China); Zuo, Min; Tao, Lei; Wang, Wei [School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009 (China); Zhang, Jing; Tang, Qiong [School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009 (China); School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009 (China); Bai, Peiwen [School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009 (China)

    2016-07-01

    The poor corrosion resistance of sintered NdFeB imposes a great challenge in industrial applications. In this work, the SiC/Al bilayer thin films with the thickness of 510 nm were deposited on sintered NdFeB by magnetron sputtering to improve the corrosion resistance. A 100 nm Al buffer film was used to reduce the internal stress between SiC and NdFeB and improve the surface roughness of the SiC thin film. The morphologies and structures of SiC/Al bilayer thin films and SiC monolayer film were investigated with FESEM, AFM and X-ray diffraction. The corrosion behaviors of sintered NdFeB coated with SiC monolayer film and SiC/Al bilayer thin films were analyzed by polarization curves. The magnetic properties were measured with an ultra-high coercivity permanent magnet pulse tester. The results show that the surface of SiC/Al bilayer thin films is more compact and uniform than that of SiC monolayer film. The corrosion current densities of SiC/Al bilayer films coated on NdFeB in acid, alkali and salt solutions are much lower than that of SiC monolayer film. The SiC/Al bilayer thin films have little influence to the magnetic properties of NdFeB. - Highlights: • The same thick Al, SiC and SiC/Al films are deposited on NdFeB by magnetron sputtering. • 510 nm SiC/Al bilayer films can improve the corrosion resistance of the NdFeB evidently. • Al buffer layer improves effectively the surface roughness of the SiC thin film. • SiC/Al bilayer films do not deteriorate the magnetic properties of NdFeB.

  20. Boron doping induced thermal conductivity enhancement of water-based 3C-Si(B)C nanofluids.

    Science.gov (United States)

    Li, Bin; Jiang, Peng; Zhai, Famin; Chen, Junhong; Bei, Guo-Ping; Hou, Xinmei; Chou, Kuo-Chih

    2018-06-04

    In this paper, the fabrication and thermal conductivity of water-based nanofluids using boron (B) doped SiC as dispersions are reported. Doping B into β-SiC phase leads to the shrinkage of SiC lattice due to the substitution of Si atoms (radius: 0.134 nm) by smaller B atoms (radius: 0.095 nm). The presence of B in SiC phase also promotes crystallization and grain growth of obtained particles. The tailored crystal structure and morphology of B doped SiC nanoparticles are beneficial for the thermal conductivity improvement of the nanofluids by using them as dispersions. Serving B doped SiC nanoparticles as dispersions for nanofluids, a remarkable improvement of the stability was achieved in SiC-B6 nanofluid at pH 11 by means of the Zeta potential measurement. Dispersing B doped SiC nanoparticles in water based fluids, the thermal conductivity of the as prepared nanofluids containing only 0.3 vol. % SiC-B6 nanoparticles is remarkably raised up to 39.3 % at 30 °C compared to the base fluids and is further enhanced with the increased temperature. The main reasons for the improvement of thermal conductivity of SiC-B6 nanofluids are more stable dispersion and intensive charge ions vibration around the surface of nanoparticles as well as the enhanced thermal conductivity of the SiC-B dispersions. © 2018 IOP Publishing Ltd.

  1. Synthesizing single-phase β-FeSi2 via ion beam irradiations of Fe/Si bilayers

    International Nuclear Information System (INIS)

    Milosavljevic, M.; Dhar, S.; Schaaf, P.; Bibic, N.; Lieb, K.P.

    2001-01-01

    This paper presents results on the direct synthesis of the β-FeSi 2 phase by ion beam mixing of Fe/Si bilayers with Xe ions. The influence of the substrate temperature, ion fluence and energy on the growth of this phase was investigated using Rutherford backscattering (RBS), X-ray diffraction (XRD) and conversion electron Moessbauer spectroscopy (CEMS). Complete growth of single-phase β-FeSi 2 was achieved by 205 keV Xe ion irradiation to a fluence of 2x10 16 ions/cm 2 at 600 deg. C. We propose a two-step reaction mechanism involving thermal and ion beam energy deposition

  2. Acceleration of Fe2W precipitation and its effect on creep deformation behavior of 8.5Cr-2W-VNb steels with Si

    International Nuclear Information System (INIS)

    Fujitsuna, N.; Igarashi, M.; Abe, F.

    2000-01-01

    The effect of Si on the precipitation behavior of M 23 C 6 and Fe 2 W Laves phase during creep and on the creep deformation behavior was studied on 8.5Cr-2W-VNb steels at 650 C for up to 10000 h. During creep and aging, Fe 2 W Laves phase precipitated and then the amount and the mean particle size of Fe 2 W precipitates became larger with increasing Si concentration, while the amount and the mean size of M 23 C 6 was scarcely changed by the addition of Si. It was cleared that Si-addition influence more strongly on the precipitation of Fe 2 W than M 23 C 6 . The creep rupture strength of the steels increased with increasing Si concentration at high stresses and short rupture times less than 2000 h, while it had a maximum at 0.3% Si and then decreased with increasing Si concentration at low stresses and long rupture times longer than 2000 h. The decrease of creep rate in the acceleration creep region was more significant by Si-addition, and the minimum creep rate was decreased by Si-addition at all stress conditions. The change in creep deformation behavior by Si-addition resulted mainly from the change in precipitation behavior of Fe 2 W, such that the decrease of creep rate in transient creep region is more significant by acceleration of Fe 2 W precipitating on the lath boundary to suppress the recovery of the lath structure and that the extreme increase of creep rate after reaching a minimum creep rate and the decrease of duration of acceleration creep region occurred with coarsening of Fe 2 W. (orig.)

  3. [sup 57]Fe Moessbauer study of amorphous and nanocrystalline Fe[sub 73. 5]Nb[sub 3]Cu[sub 1]Si[sub 13. 5]B[sub 9] after neutron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Miglierini, M. (Dept. of Nuclear Physics and Technology, Slovak Technical Univ., Bratislava (Slovakia)); Sitek, J. (Dept. of Nuclear Physics and Technology, Slovak Technical Univ., Bratislava (Slovakia)); Szasz, Z. (Dept. of Nuclear Physics and Technology, Slovak Technical Univ., Bratislava (Slovakia)); Vitazek, K. (Dept. of Nuclear Physics and Technology, Slovak Technical Univ., Bratislava (Slovakia))

    1994-05-01

    [sup 57]Fe Moessbauer spectroscopy is used to study neutron irradiation induced changes in the short-range order of Fe[sub 73.5]Nb[sub 3]Cu[sub 1]Si[sub 13.5]B[sub 9] alloy. The samples are investigated in both amorphous and nanocrystalline states. Neutron irradiation leads to an increase of the standard deviation of a hyperfine field distribution (HFD), implying rearrangement of the atoms towards disordering. Simultaneously, changes in the average value of the hyperfine field and a net magnetic moment position occur as a consequence of a spin reorientation, atom mixing and microscopic stress centres which are introduced by neutron irradiation. (orig.)

  4. Boron diffusion into nitrogen doped silicon films for P{sup +} polysilicon gate structures

    Energy Technology Data Exchange (ETDEWEB)

    Mansour, Farida; Mahamdi, Ramdane; Jalabert, Laurent; Temple-Boyer, Pierre

    2003-06-23

    This paper deals with the study of the boron diffusion in nitrogen doped silicon (NIDOS) deposited from disilane Si{sub 2}H{sub 6} and ammonia NH{sub 3} for the development of P{sup +} polysilicon gate metal oxide semiconductor (MOS) devices. NIDOS films with varied nitrogen content have been boron implanted, then annealed and finally analysed by secondary ion mass spectroscopy (SIMS). In order to simulate the experimental SIMS of boron concentration profiles in the NIDOS films, a model adapted to the particular conditions of the samples elaboration, i.e. the very high boron concentration and the nitrogen content, has been established. The boron diffusion reduction in NIDOS films with increasing nitrogen rates has been evidenced by the profiles as well as by the obtained diffusion coefficients, which shows that the nitrogen incorporation reduces the boron diffusion. This has been confirmed by capacitance-voltage (C-V) measurements performed on MOS capacitors: the higher the nitrogen content, the lower the flat-band voltage. Finally, these results demonstrate that the improvement of the gate oxide quality occurs with the suppression of the boron penetration.

  5. Fabrication of highly spin-polarized Co2FeAl0.5Si0.5 thin-films

    Directory of Open Access Journals (Sweden)

    M. Vahidi

    2014-04-01

    Full Text Available Ferromagnetic Heusler Co2FeAl0.5Si0.5 epitaxial thin-films have been fabricated in the L21 structure with saturation magnetizations over 1200 emu/cm3. Andreev reflection measurements show that the spin polarization is as high as 80% in samples sputtered on unheated MgO (100 substrates and annealed at high temperatures. However, the spin polarization is considerably smaller in samples deposited on heated substrates.

  6. The structure-property relationships of powder processed Fe-Al-Si alloys

    Energy Technology Data Exchange (ETDEWEB)

    Prichard, Paul D. [Iowa State Univ., Ames, IA (United States)

    1998-02-23

    Iron-aluminum alloys have been extensively evaluated as semi-continuous product such as sheet and bar, but have not been evaluated by net shape P/M processing techniques such as metal injection molding. The alloy compositions of iron-aluminum alloys have been optimized for room temperature ductility, but have limited high temperature strength. Hot extruded powder alloys in the Fe-Al-Si system have developed impressive mechanical properties, but the effects of sintering on mechanical properties have not been explored. This investigation evaluated three powder processed Fe-Al-Si alloys: Fe-15Al, Fe-15Al-2.8Si, Fe-15Al-5Si (atomic %). The powder alloys were produced with a high pressure gas atomization (HPGA) process to obtain a high fraction of metal injection molding (MIM) quality powder (D84 < 32 μm). The powders were consolidated either by P/M hot extrusion or by vacuum sintering. The extruded materials were near full density with grain sizes ranging from 30 to 50 μm. The vacuum sintering conditions produced samples with density ranging from 87% to 99% of theoretical density, with an average grain size ranging from 26 μm to 104 μm. Mechanical property testing was conducted on both extruded and sintered material using a small punch test. Tensile tests were conducted on extruded bar for comparison with the punch test data. Punch tests were conducted from 25 to 550 C to determine the yield strength, and fracture energy for each alloy as a function of processing condition. The ductile to brittle transition temperature (DBTT) was observed to increase with an increasing silicon content. The Fe-15Al-2.8Si alloy was selected for more extensive testing due to the combination of high temperature strength and low temperature toughness due to the two phase α + DO3 structure. This investigation provided a framework for understanding the effects of silicon in powder processing and mechanical property behavior of Fe-Al-Si alloys.

  7. Characterization of structures and novel magnetic response of Fe87.5Si7Al5.5 alloy processed by ball milling

    International Nuclear Information System (INIS)

    Duan, Yuping; Gu, Shuchao; Zhang, Zhonglun; Wen, Ming

    2012-01-01

    Highlights: ► The water atomized Fe 87.5 Si 7 Al 5.5 (Wt.%) alloy was processed by ball-milling. ► The microstructure and magnetic properties of alloy changed following milling. ► The powders milled for 10 h have the largest M s and strongest reflection loss. ► The permeability of the powders milled for 2 h is the largest. ► The charge exchange between Fe and Si is discussed base on first-principles. - Abstract: The water atomized Fe 87.5 Si 7 Al 5.5 (Wt.%) alloy was processed by a high-energy planetary ball-milling. The characterization of morphology, microstructure, and electromagnetic properties were measured by scanning electron microscope (SEM), X-ray diffractometer, vibrating sample magnetometer (VSM), vector network analyzer and the first principle method. The analysis results showed that the powders shape became flaky from fusiform. The powders showed a reduction of the average grain size and the increase of the internal strain, and then presented an adverse variation trend after 55 h milling. The powders that milled 10 h had the largest saturation magnetization M S (131 emu/g). The value μ′ of the powders decreased with increasing milling time at relatively lower frequency (2–8 GHz), but opposite variation tendency happened at higher frequency (8–18 GHz). Also, only short time milling can enhance the value of μ″ in the test frequency. The powders after 10 h milling showed excellent microwave absorption (RL < −10 dB) at the frequency 9.0–15.6 GHz and the absorption peak shifted regularly to the high frequency as the increased milling time. Furthermore, the effect of charge exchange between the Fe and Si on the saturation magnetization in the ball-milling process was also investigated by using density functional theory (DFT) of first principle.

  8. Defect formation in oxygen- and boron- implanted MOS structures after gamma irradiation

    CERN Document Server

    Kaschieva, S; Skorupa, W

    2003-01-01

    The effect of gamma irradiation on the interface states of ion-implanted MOS structures is studied by means of the thermally stimulated charge method. 10-keV oxygen- or boron- (O sup + or B sup +) implanted samples are gamma-irradiated with sup 6 sup 0 Co. Gamma irradiation creates electron levels at the SiSiO sub 2 interface of the samples in a different way depending on the type of the previously implanted atoms (O sup + or B sup +). The results demonstrate that the concentration of the shallower levels (in the silicon band gap) of oxygen-implanted samples increases more effectively after gamma irradiation. The same irradiation conditions increase more intensively the concentration of the deeper levels (in the silicon band gap) of boron-implanted samples. (orig.)

  9. Depth resolved investigations of boron implanted silicon

    Science.gov (United States)

    Sztucki, M.; Metzger, T. H.; Milita, S.; Berberich, F.; Schell, N.; Rouvière, J. L.; Patel, J.

    2003-01-01

    We have studied the depth distribution and structure of defects in boron implanted silicon (0 0 1). Silicon wafers were implanted with a boron dose of 6×10 15 ions/cm -2 at 32 keV and went through different annealing treatments. Using diffuse X-ray scattering at grazing incidence and exit angles we are able to distinguish between different kinds of defects (point defect clusters and extrinsic stacking faults on {1 1 1} planes) and to determine their depth distribution as a function of the thermal budget. Cross-section transmission electron microscopy was used to gain complementary information. In addition we have determined the strain distribution caused by the boron implantation as a function of depth from rocking curve measurements.

  10. Glass forming ability and magnetic properties of Co{sub (40.2−x)}Fe{sub (20.1+x)}Ni{sub 6.7}B{sub 22.7}Si{sub 5.3}Nb{sub 5} (x=0–10) bulk metallic glasses produced by suction casting

    Energy Technology Data Exchange (ETDEWEB)

    Sarlar, Kagan [Physics Department, Faculty of Arts and Sciences, Uludag University, Gorukle Campus, 16059 Bursa (Turkey); Physics Department, Kamil Ozdag Faculty of Sciences, Karamanoglu Mehmetbey University, YunusEmre Campus, 70100 Karaman (Turkey); Kucuk, Ilker, E-mail: ikucuk@uludag.edu.tr [Physics Department, Faculty of Arts and Sciences, Uludag University, Gorukle Campus, 16059 Bursa (Turkey)

    2015-01-15

    The effect of Fe concentration on the glass forming ability (GFA) and magnetic properties in Co{sub (40.2−x)}Fe{sub (20.1+x)}Ni{sub 6.7}B{sub 22.7}Si{sub 5.3}Nb{sub 5} (x=0–10) bulk metallic glasses were investigated. By suction casting method, the bulk metallic glasses with diameters up to 2 mm were produced. We try to find out which Fe concentration makes an influence on Co based system's magnetic properties and glass forming ability. The curves of thermal analysis, obtained using differential scanning calorimetry (DSC), show that the Co{sub (40.2−x)}Fe{sub (20.1+x)}Ni{sub 6.7}B{sub 22.7}Si{sub 5.3}Nb{sub 5} (x=0–10) have a supercooled liquid region (∆T{sub x}) of about 44 K. The saturation magnetizations (J{sub s}) for as-cast BMG alloys were in the range of 0.62 T−0.81 T. - Highlights: • The effect of Fe concentration on the glass forming ability. • The substitution of an appropriate amount of Fe can enhance the GFA. • The substitution of Fe for Co also improves soft magnetic properties of the BMGs. • The high of J{sub s} 0.62−0.81 T with a low H{sub c} of 2−289 A/m of the alloys.

  11. Oxidation-enhanced diffusion of boron in very low-energy N2+-implanted silicon

    Science.gov (United States)

    Skarlatos, D.; Tsamis, C.; Perego, M.; Fanciulli, M.

    2005-06-01

    In this article we study the interstitial injection during oxidation of very low-energy nitrogen-implanted silicon. Buried boron δ layers are used to monitor the interstitial supersaturation during the oxidation of nitrogen-implanted silicon. No difference in boron diffusivity enhancement was observed compared to dry oxidation of nonimplanted samples. This result is different from our experience from N2O oxynitridation study, during which a boron diffusivity enhancement of the order of 20% was observed, revealing the influence of interfacial nitrogen on interstitial kinetics. A possible explanation may be that implanted nitrogen acts as an excess interstitial sink in order to diffuse towards the surface via a non-Fickian mechanism. This work completes a wide study of oxidation of very low-energy nitrogen-implanted silicon related phenomena we performed within the last two years [D. Skarlatos, C. Tsamis, and D. Tsoukalas, J. Appl. Phys. 93, 1832 (2003); D. Skarlatos, E. Kapetanakis, P. Normand, C. Tsamis, M. Perego, S. Ferrari, M. Fanciulli, and D. Tsoukalas, J. Appl. Phys. 96, 300 (2004)].

  12. Effects of grain refinement on the rheological behaviors of semisolid hypoeutectic Al-Si alloys

    International Nuclear Information System (INIS)

    Yan, M.; Luo, W.

    2007-01-01

    The paper experimentally investigated the effects of grain refinement on the rheological response of Al and hypoeutectic Al-Si alloys. Selected refiners included K 2 TiF 6 , K 2 TiF 6 plus graphite and Al-5Ti-B. The apparent viscosity of semisolid Al alloys was measured during solidification. Samples at different solid fractions were quenched to observe the microstructure. It was found that grain refinement drastically lowered the apparent viscosity of Al-Si alloys. Among selected refiners, the effect of Al-5Ti-B was the best. The effect of K 2 TiF 6 plus graphite was better than that of K 2 TiF 6 . Silicon contents in Al alloys affected the apparent viscosity. With increasing silicon content the apparent viscosity decreased, resulted from promotion of silicon to both refining effects of titanium and boron

  13. Study of boron detection limit using the in-air PIGE set-up at LAMFI-USP

    Energy Technology Data Exchange (ETDEWEB)

    Moro, M. V.; Silva, T. F.; Trindade, G. F.; Added, N.; Tabacniks, M. H. [Institute of Physics, University of São Paulo, SP (Brazil)

    2014-11-11

    The quantification of small amounts of boron in materials is of extreme importance in different areas of materials science. Boron is an important contaminant and also a silicon dopant in the semiconductor industry. Boron is also extensively used in nuclear power plants, either for neutron shielding or for safety control and boron is an essential nutrient for life, either vegetable or animal. The production of silicon solar cells, by refining metallurgical-grade silicon (MG-Si) requires the control and reduction of several silicon contaminants to very low concentration levels. Boron is one of the contaminants of solar-grade silicon (SG-Si) that must be controlled and quantified at sub-ppm levels. In the metallurgical purification, boron quantification is usually made by Inductive Coupled Plasma Mass Spectrometry, (ICP-MS) but the results need to be verified by an independent analytical method. In this work we present the results of the analysis of silicon samples by Particle Induced Gamma-Ray Emission (PIGE) aiming the quantification of low concentrations of boron. PIGE analysis was carried out using the in-air external beam line of the Laboratory for Materials Analysis with Ion Beams (LAMFI-USP) by the {sup 10}B(p,αγ({sup 7}Be nuclear reaction, and measuring the 429 keV γ-ray. The in-air PIGE measurements at LAMFI have a quantification limit of the order of 10{sup 16} at/cm{sup 2}.

  14. Effect of mechanical activation on jell boronizing treatment of the AISI 4140

    Science.gov (United States)

    Yılmaz, S. O.; Karataş, S.

    2013-06-01

    The article presents the effect of mechanical activation on the growth kinetics of boride layer of boronized AISI 4140 steel. The samples were boronized by ferroboron + (SiO2-Na2O) powders for 873-1173 K temperature and 2, 4, 6 and 8 h times, respectively. The morphology and types of borides formed on the surface of AISI 4140 steel substrate were analyzed. Layer growth kinetics were analyzed by measuring the extent of penetration of FeB and Fe2B sublayers as function of treatment time and temperature in the range of 873-1173 K. High diffusivity was obtained by creating a large number of defects through mechanical activation in the form of nanometer sized crystalline particles through the repeated fracturing and cold-welding of the powder particles, and a depth of 100 μm was found in the specimen borided by the 2 h MA powders, for 4 h and 1073 K, where 2000-2350 HV were measured. Consequently, the application conditions of boronizing were improved by usage of mechanical activation. The preferred Fe2B boride without FeB could be formed in the boride layer under 973 K boronizing temperature by mechanically activated by ferroboron + sodium silicate powder mixture due to the decrease of the activation energy.

  15. Structural and optical properties of {beta}-FeSi{sub 2}/Si(100) prepared by laser ablation method

    Energy Technology Data Exchange (ETDEWEB)

    Kakemoto, H; Makita, Y; Obara, A; Tsai, Y; Sakuragi, S; Ando, S; Tsukamoto, T

    1997-07-01

    {beta}-FeSi{sub 2} is a promising material for the application of various electronic, optoelectronic and energy devices. The authors present here the semiconducting properties of {beta}-FeSi{sub 2} films on Si(100) substrate prepared by laser ablation method. Samples were grown using poly-crystalline bulk {beta}-FeSi{sub 2} prepared by horizontal gradient freeze method. For the monitoring of growth, in-situ observation of ablation plume was made through fluorescence spectroscopy. Reflection of high-energy electron beam diffraction (RHEED) was also made in-situ to see the surface morphology. Characterization of the films by X-ray diffraction presented purely {beta}(220) orientation. Raman scattering measurements at room temperature also indicated that the grown films are semiconducting {beta}-FeSi{sub 2}. Optical absorption spectra at room temperature showed absorption coefficient higher than 10{sup 5} cm{sup {minus}1} above the band-gap ({approximately}1.2 eV). It was revealed that high quality semiconducting {beta}-FeSi{sub 2} films can be fabricated by laser ablation method without post-annealing.

  16. Effects of silicon application on diurnal variations of physiological properties of rice leaves of plants at the heading stage under elevated UV-B radiation

    Science.gov (United States)

    Lou, Yun-sheng; Wu, Lei; Lixuan, Ren; Meng, Yan; Shidi, Zhao; Huaiwei, Zhu; Yiwei, Zhang

    2016-02-01

    We investigated the effects of silicon (Si) application on diurnal variations of photosynthetic and transpiration physiological parameters in potted rice ( Oryza sativa L. cv Nanjing 45) at the heading stage. The plants were subjected to two UV-B radiation levels, i.e., reference UV-B (A, ambient, 12.0 kJ m-2 day-1) and elevated UV-B radiation (E, a 20 % higher dose of UV-B than the reference, 14.4 kJ m-2 day-1), and four Si application levels, i.e., Si0 (no silicon supplementation, 0 kg SiO2 ha-1), Si1 (sodium silicate, 100 kg SiO2 ha-1), Si2 (sodium silicate, 200 kg SiO2 ha-1), and Si3 (slag silicon fertilizer, 200 kg SiO2 ha-1). Compared with the reference, elevated UV-B radiation decreased the diurnal mean values of the net photosynthetic rate ( Pn), intercellular carbon dioxide (CO2) concentration ( Ci), transpiration rate ( Tr), stomatal conductivity ( Gs), and water use efficiency (WUE) by 11.3, 5.5, 10.4, 20.3, and 6.3 %, respectively, in plants not supplemented with silicon (Si0), and decreased the above parameters by 3.8-5.5, 0.7-4.8, 4.0-8.7, 7.4-20.2, and 0.7-5.9 %, respectively, in plants treated with silicon (Si1, Si2, and Si3), indicating that silicon application mitigates the negative effects of elevated UV-B radiation. Under elevated UV-B radiation, silicon application (Si1, Si2, and Si3) increased the diurnal mean values of Pn, Ci, Gs, and WUE by 16.9-28.0, 3.5-14.3, 16.8-38.7, and 29.0-51.2 %, respectively, but decreased Tr by 1.9-10.8 %, compared with plants not treated with silicon (E+Si0), indicating that silicon application mitigates the negative effects of elevated UV-B radiation by significantly increasing the P n, C i, G s, and WUE and decreasing the T r of rice. Evident differences existed in mitigating the depressive effects of elevated UV-B radiation on diurnal variations of physiological parameters among different silicon application treatments, exhibiting as Si3>Si2>Si1>Si0. In addition to recycling steel industrial wastes, the

  17. Effects of silicon application on diurnal variations of physiological properties of rice leaves of plants at the heading stage under elevated UV-B radiation.

    Science.gov (United States)

    Lou, Yun-sheng; Wu, Lei; Lixuan, Ren; Meng, Yan; Shidi, Zhao; Huaiwei, Zhu; Yiwei, Zhang

    2016-02-01

    We investigated the effects of silicon (Si) application on diurnal variations of photosynthetic and transpiration physiological parameters in potted rice (Oryza sativa L. cv Nanjing 45) at the heading stage. The plants were subjected to two UV-B radiation levels, i.e., reference UV-B (A, ambient, 12.0 kJ m(-2) day(-1)) and elevated UV-B radiation (E, a 20% higher dose of UV-B than the reference, 14.4 kJ m(-2) day(-1)), and four Si application levels, i.e., Si0 (no silicon supplementation, 0 kg SiO2 ha(-1)), Si1 (sodium silicate, 100 kg SiO2 ha(-1)), Si2 (sodium silicate, 200 kg SiO2 ha(-1)), and Si3 (slag silicon fertilizer, 200 kg SiO2 ha(-1)). Compared with the reference, elevated UV-B radiation decreased the diurnal mean values of the net photosynthetic rate (Pn), intercellular carbon dioxide (CO2) concentration (Ci), transpiration rate (Tr), stomatal conductivity (Gs), and water use efficiency (WUE) by 11.3, 5.5, 10.4, 20.3, and 6.3%, respectively, in plants not supplemented with silicon (Si0), and decreased the above parameters by 3.8-5.5, 0.7-4.8, 4.0-8.7, 7.4-20.2, and 0.7-5.9%, respectively, in plants treated with silicon (Si1, Si2, and Si3), indicating that silicon application mitigates the negative effects of elevated UV-B radiation. Under elevated UV-B radiation, silicon application (Si1, Si2, and Si3) increased the diurnal mean values of Pn, Ci, Gs, and WUE by 16.9-28.0, 3.5-14.3, 16.8-38.7, and 29.0-51.2%, respectively, but decreased Tr by 1.9-10.8%, compared with plants not treated with silicon (E+Si0), indicating that silicon application mitigates the negative effects of elevated UV-B radiation by significantly increasing the P n, C i, G s, and WUE and decreasing the T r of rice. Evident differences existed in mitigating the depressive effects of elevated UV-B radiation on diurnal variations of physiological parameters among different silicon application treatments, exhibiting as Si3>Si2>Si1>Si0. In addition to recycling steel industrial wastes, the

  18. Boron-Loaded Silicone Rubber Scintillators

    Energy Technology Data Exchange (ETDEWEB)

    Bell, Z.W.; Maya, L.; Brown, G.M.; Sloop, F.V.Jr

    2003-05-12

    Silicone rubber received attention as an alternative to polyvinyltoluene in applications in which the scintillator is exposed to high doses because of the increased resistance of the rubber to the formation of blue-absorbing color centers. Work by Bowen, et al., and Harmon, et al., demonstrated their properties under gamma/x-ray irradiation, and Bell, et al. have shown their response to thermal neutrons. This last work, however, provided an example of a silicone in which both the boron and the scintillator were contained in the rubber as solutes, a formulation which led to the precipitation of solids and sublimation of the boron component. In the present work we describe a scintillator in which the boron is chemically bonded to the siloxane and so avoids the problem of precipitation and loss of boron to sublimation. Material containing up to 18% boron, by weight, was prepared, mounted on photomultipliers, and exposed to both neutron and gamma fluxes. Pulse height spectra showing the neutron and photon response were obtained, and although the light output was found to be much poorer than from samples in which boron was dissolved, the higher boron concentrations enabled essentially 100% neutron absorption in only a few millimeters' thickness of rubber.

  19. Luminescence properties of Si-capped β-FeSi{sub 2} nanodots epitaxially grown on Si(001) and (111) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Amari, Shogo; Ichikawa, Masakazu [Department of Applied Physics, Graduate School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656 (Japan); Nakamura, Yoshiaki, E-mail: nakamura@ee.es.osaka-u.ac.jp [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan); PRESTO, JST, 4-1-8 Honcho Kawaguchi, Saitama 332-0012 (Japan)

    2014-02-28

    We studied the luminescence properties of Si-capped β-FeSi{sub 2} nanodots (NDs) epitaxially grown on Si substrates by using photoluminescence (PL) and electroluminescence (EL) spectroscopies. Codepositing Fe and Si on ultrathin SiO{sub 2} films induced the self-assembly of epitaxial β-FeSi{sub 2} NDs. The PL spectra of the Si/β-FeSi{sub 2} NDs/Si structure depended on the crystal orientation of the Si substrate. These structures exhibited a broad PL peak near 0.8 eV on both Si(001) and (111) substrates. The PL intensity depended on the shape of the β-FeSi{sub 2} NDs. For the flat NDs, which exhibited higher PL intensity, we also recorded EL spectra. We explained the luminescence properties of these structures by the presence of nanostructured Si offering radiative electronic states in the Si cap layers, generated by nano-stressors for upper Si layer: the strain-relaxed β-FeSi{sub 2} NDs.

  20. High-rate and ultralong cycle-life LiFePO_4 nanocrystals coated by boron-doped carbon as positive electrode for lithium-ion batteries

    International Nuclear Information System (INIS)

    Feng, Jinpeng; Wang, Youlan

    2016-01-01

    Highlights: • B-doped carbon decorated LiFePO_4 has been fabricated for the first time. • The LiFePO_4@B-CdisplaysimprovedbatteryperformancecomparedtoLiFePO_4@C. • The LiFePO_4@B-C is good candidate for high-performance lithium-ion batteries. - Abstract: An evolutionary modification approach, boron-doped carbon coating, has been used to improve the electrochemical performances of positive electrodes for lithium-ion batteries, and demonstrates apparent and significant modification effects. In this study, the boron-doped carbon coating is firstly adopted and used to decorate the performance of LiFePO_4. The obtained composite exhibits a unique core-shell structure with an average diameter of 140 nm and a 4 nm thick boron-doped carbon shell that uniformly encapsulates the core. Owing to the boron element which could induce high amount of defects in the carbon, the electronic conductivity of LiFePO_4 is greatly ameliorated. Thus, the boron-doped composite shows superior rate capability and cycle stability than the undoped sample. For instance, the reversible specific capacity of LiFePO_4@B_0_._4-C can reach 164.1 mAh g"−"1 at 0.1C, which is approximately 96.5% of the theoretical capacity (170 mAh g"−"1). Even at high rate of 10C, it still shows a high specific capacity of 126.8 mAh g"−"1 and can be maintained at 124.5 mAh g"−"1 after 100 cycles with capacity retention ratio of about 98.2%. This outstanding Li-storage property enable the present design strategy to open up the possibility of fabricating the LiFePO_4@B-C composite for high-performance lithium-ion batteries.

  1. Hydrogen-boron complexes in heavily boron-doped silicon treated with high concentration of hydrogen atoms

    International Nuclear Information System (INIS)

    Fukata, N.; Fukuda, S.; Sato, S.; Ishioka, K.; Kitajima, M.; Hishita, S.; Murakami, K.

    2006-01-01

    The formation of hydrogen (H)-related complexes was investigated in boron (B)-doped Si treated with high concentration of H. The isotope shifts of H-related Raman peaks by replacement of H to deuterium and 1 B to 11 B clearly showed the formation of the B-H complexes in which H directly bonds to B in Si. The results of the resistivity measurements suggested that the B acceptors are passivated via the formation of the B-H complexes, as well as the well-known passivation center in B-doped Si, namely, H-B passivation center

  2. Structural-microstructural characteristics and its correlations with the superconducting properties of in situ PIT-processed MgB{sub 2} tapes with ethyltoluene and SiC powder added

    Energy Technology Data Exchange (ETDEWEB)

    Asthana, Anjana; Matsumoto, A; Kitaguchi, H; Kumakura, H [Superconducting Materials Center, National Institute for Materials Science, 1-1-2 Sengen, Tsukuba, 305-0047 (Japan); Matsui, Y; Hara, T; Watanabe, K [Advanced Electron Microscopy Group, National Institute for Materials Science, 1-1-1 Namiki, Tsukuba, 305-0044 (Japan); Yamada, H; Uchiyama, N [Maglev System Development Division, Central Japan Railways Company, 1545-33, Ooyama, Komaki, Aichi 485-0801 (Japan)], E-mail: anjana.ASTHANA@nims.go.jp

    2008-11-15

    We performed structural-microstructural investigations of pure MgB{sub 2}, ethyltoluene and both ethyltoluene- and SiC-added MgB{sub 2}/Fe tapes. The analysis of the microstructure shows that the grain size for the pure and ethyltoluene-added MgB{sub 2} tape sample is in the range of 10-100 nm. However, with the addition of both ethyltoluene and SiC, the grain size decreases to about 5-80 nm. The a-axis length of the ethyltoluene-added tape samples is slightly decreased, whereas for both ethyltoluene- and SiC-added samples, the a-axis length is decreased by 0.4% as compared to the pure MgB{sub 2} tape sample, showing the amount of carbon substitution is less in ethyltoluene-added tape samples. The reason for the higher J{sub c} values of the ethyltoluene-added MgB{sub 2} tape sample as compared to the pure MgB{sub 2} tapes is the presence of a lesser amount of the impurity phase, MgO. The large improvement in J{sub c}-B properties for the ethyltoluene- and SiC-added MgB{sub 2} tape sample is attributed to (1) the enhancement of upper critical field, B{sub c2}, by the substitution of carbon for boron, (2) pinning by nanosized (5-20 nm) particles of Mg{sub 2}Si and other silicides, (3) enhanced grain boundary pinning due to the smaller grain size and (4) the presence of a lesser amount of impurity phase, MgO, as compared to the pure sample.

  3. Characterization of crystallization kinetics of a Ni- (Cr, Fe, Si, B, C, P) based amorphous brazing alloy by non-isothermal differential scanning calorimetry

    International Nuclear Information System (INIS)

    Raju, S.; Kumar, N.S. Arun; Jeyaganesh, B.; Mohandas, E.; Mudali, U. Kamachi

    2007-01-01

    The thermal stability and crystallization kinetics of a Ni- (Cr, Si, Fe, B, C, P) based amorphous brazing foil have been investigated by non-isothermal differential scanning calorimetry. The glass transition temperature T g , is found to be 720 ± 2 K. The amorphous alloy showed three distinct, yet considerably overlapping crystallization transformations with peak crystallization temperatures centered around 739, 778 and 853 ± 2 K, respectively. The solidus and liquidus temperatures are estimated to be 1250 and 1300 ± 2 K, respectively. The apparent activation energies for the three crystallization reactions have been determined using model free isoconversional methods. The typical values for the three crystallization reactions are: 334, 433 and 468 kJ mol -1 , respectively. The X-ray diffraction of the crystallized foil revealed the presence of following compounds Ni 3 B (Ni 4 B 3 ), CrB, B 2 Fe 15 Si 3 , CrSi 2 , and Ni 4.5 Si 2 B

  4. A polarized neutron study of the magnetization distribution in Co2FeSi

    International Nuclear Information System (INIS)

    Brown, P J; Kainuma, R; Kanomata, T; Okubo, A; Neumann, K-U; Umetsu, R Y; Ziebeck, K R A

    2013-01-01

    The magnetization distribution in Co 2 FeSi which has the largest moment per formula unit ∼6 μ B of all Heusler alloys, has been determined using polarized neutron diffraction. The experimentally determined magnetization has been integrated over spheres centred on the three sites of the L1 2 structure giving μ Fe = 3.10(3) μ B and μ Co = 1.43(2) μ B , results which are slightly lower than the moments in atomic spheres of similar radii obtained in recent LDA + U band structure calculations (Li et al 2010 Chin. Phys. B 19 097102). Approximately 50% of the magnetic carriers at the Fe sites were found to be in orbitals with e g symmetry. This was higher, ≃65%, at the Co sites. Both Fe and Co were found to have orbital moments that are larger than those predicted. Comparison with similar results obtained for related alloys suggests that there must be a finite density of states in both spin bands at the Fermi energy indicating that Co 2 FeSi is not a perfect half-metallic ferromagnet. (paper)

  5. Thermodynamic Description Of Ternary Fe-B-X Systems. Part 2: Fe-B-Ni

    Directory of Open Access Journals (Sweden)

    Miettinen J.

    2014-06-01

    Full Text Available Przedstawiono termodynamiczny opis trójskładnikowego układu Fe-B-Ni w kontekście nowej bazy danych dla układów Fe-B-X (X = Cr, Ni, Mn, Si, Ti, V, C. Parametry termodynamiczne dwuskładnikowych stopów Fe-B. Fe-Ni i B-Ni zostały są zaczerpnięte z wcześniejszych opracowań, przy tym opis B-Ni został nieznacznie zmodyfikowany. Parametry dla układu Fe-B-Ni zostały zoptymalizowane w tej pracy w oparciu o eksperymentalne równowagi fazowe i dane termodynamiczne zaczerpnięte z literatury. Roztwory stałe w układzie Fe-B-Ni opisano przy użyciu modelu roztworu substytucyjnego, a borki traktowane są jako fazy stechiometryczne lub półstechiometryczne typu (A.BpCq opisane przy użyciu modelu dwu podsieci.

  6. Effect of low level doping of boron and phosphorus on the properties of amorphous silicon films

    International Nuclear Information System (INIS)

    Tran, N.T.; Epstein, K.A.; Grimmer, D.P.; Vernstrom, G.D.

    1987-01-01

    Effect of the low level doping of boron and phosphorus on the properties of amorphous silicon films (a-Si:H) were studied. Doping level of both boron and phosphorus was in the range of 10/sup 17/ atoms/cm/sup 3/. Apparent improvement in the stability of dark and photoconductivity of a-Si: films upon low level doping does not result from the elimination of light-induced defects. The stability of the dark and photoconductivity upon doping is an indication of pinning of the Fermi level

  7. Selective Etching of Silicon in Preference to Germanium and Si0.5Ge0.5.

    Science.gov (United States)

    Ahles, Christopher F; Choi, Jong Youn; Wolf, Steven; Kummel, Andrew C

    2017-06-21

    The selective etching characteristics of silicon, germanium, and Si 0.5 Ge 0.5 subjected to a downstream H 2 /CF 4 /Ar plasma have been studied using a pair of in situ quartz crystal microbalances (QCMs) and X-ray photoelectron spectroscopy (XPS). At 50 °C and 760 mTorr, Si can be etched in preference to Ge and Si 0.5 Ge 0.5 , with an essentially infinite Si/Ge etch-rate ratio (ERR), whereas for Si/Si 0.5 Ge 0.5 , the ERR is infinite at 22 °C and 760 mTorr. XPS data showed that the selectivity is due to the differential suppression of etching by a ∼2 ML thick C x H y F z layer formed by the H 2 /CF 4 /Ar plasma on Si, Ge, and Si 0.5 Ge 0.5 . The data are consistent with the less exothermic reaction of fluorine radicals with Ge or Si 0.5 Ge 0.5 being strongly suppressed by the C x H y F z layer, whereas, on Si, the C x H y F z layer is not sufficient to completely suppress etching. Replacing H 2 with D 2 in the feed gas resulted in an inverse kinetic isotope effect (IKIE) where the Si and Si 0.5 Ge 0.5 etch rates were increased by ∼30 times with retention of significant etch selectivity. The use of D 2 /CF 4 /Ar instead of H 2 /CF 4 /Ar resulted in less total carbon deposition on Si and Si 0.5 Ge 0.5 and gave less Ge enrichment of Si 0.5 Ge 0.5 . These results are consistent with the selectivity being due to the differential suppression of etching by an angstrom-scale carbon layer.

  8. Structure and soft magnetic properties of Fe-Si-B-P-Cu nanocrystalline alloys with minor Mn addition

    Directory of Open Access Journals (Sweden)

    Xingjie Jia

    2018-05-01

    Full Text Available Addition of minor Mn effectively improves the amorphous-forming ability and thermal stability of the Fe85Si2B8P4Cu1 alloy. With increasing the Mn content from 0 to 3 at.%, the critical thickness for amorphous formation and onset temperature of the primary crystallization increase from 14 μm and 659 K to 27 μm and 668 K, respectively. The fine nanocrystalline structure with α-Fe grains in size (D of < 20 nm was obtained for the annealed amorphous alloys, which show excellent soft magnetic properties. The alloying of Mn reduces the coercivity (Hc by decreasing the D value and widens the optimum annealing temperature range for obtaining low Hc, although the saturation magnetic flux density (Bs is decreased slightly. The Fe83Mn2Si2B8P4Cu1 nanocrystalline alloy possesses fine structure with a D of ∼17.5 nm, and exhibits a high Bs of ∼1.75 T and a low Hc of ∼5.9 A/m. The mechanism related to the alloying effects on the structure and magnetic properties was discussed in term of the crystallization activation energy.

  9. Structure and soft magnetic properties of Fe-Si-B-P-Cu nanocrystalline alloys with minor Mn addition

    Science.gov (United States)

    Jia, Xingjie; Li, Yanhui; Wu, Licheng; Zhang, Wei

    2018-05-01

    Addition of minor Mn effectively improves the amorphous-forming ability and thermal stability of the Fe85Si2B8P4Cu1 alloy. With increasing the Mn content from 0 to 3 at.%, the critical thickness for amorphous formation and onset temperature of the primary crystallization increase from 14 μm and 659 K to 27 μm and 668 K, respectively. The fine nanocrystalline structure with α-Fe grains in size (D) of < 20 nm was obtained for the annealed amorphous alloys, which show excellent soft magnetic properties. The alloying of Mn reduces the coercivity (Hc) by decreasing the D value and widens the optimum annealing temperature range for obtaining low Hc, although the saturation magnetic flux density (Bs) is decreased slightly. The Fe83Mn2Si2B8P4Cu1 nanocrystalline alloy possesses fine structure with a D of ˜17.5 nm, and exhibits a high Bs of ˜1.75 T and a low Hc of ˜5.9 A/m. The mechanism related to the alloying effects on the structure and magnetic properties was discussed in term of the crystallization activation energy.

  10. The role of silicon on the microstructure and magnetic behaviour of nanostructured (Fe{sub 0.7}Co{sub 0.3}){sub 100−x}Si{sub x} powders

    Energy Technology Data Exchange (ETDEWEB)

    Hocine, M. [Département de Génie Mécanique, Faculté de Technologies, Université de M' sila, B.P 166 Ichbelia, M' sila (Algeria); UR-MPE, M' hamed Bougara University, Boumerdes, 35000 Algeria (Algeria); Guittoum, A., E-mail: aguittoum@gmail.com [Nuclear Research Centre of Algiers, 02Bd Frantz Fanon, BP 399, Alger-Gare, Algiers (Algeria); Hemmous, M. [Nuclear Research Centre of Algiers, 02Bd Frantz Fanon, BP 399, Alger-Gare, Algiers (Algeria); Martínez-Blanco, D. [SCTs, University of Oviedo, EPM, Mieres, 33600 Spain (Spain); Gorria, P. [Department of Physics, EPI, University of Oviedo, Gijón, 33203 Spain (Spain); Rahal, B. [Nuclear Research Centre of Algiers, 02Bd Frantz Fanon, BP 399, Alger-Gare, Algiers (Algeria); Blanco, J.A. [Department of Physics, University of Oviedo, CalvoSotelo St., Oviedo, 330 07 Spain (Spain); Sunol, J.J. [Departament de Fisica, Universitat de Girona, Campus de Montillivi, Girona, 17071 Spain (Spain); Laggoun, A. [UR-MPE, M' hamed Bougara University, Boumerdes, 35000 Algeria (Algeria)

    2017-01-15

    Single-phase(Fe{sub 0.7}Co{sub 0.3}){sub 100−x}Si{sub x} nanostructured powders (x=0,5, 10, 15 and 20) have been elaborated by mechanical alloying in order to investigate the effect of silicon on the microstructure and magnetic properties of these alloys. A disordered Fe(Co, Si) solid solution with body centred cubic (bcc) crystal structure is formed after 72 h of milling for all the compositions. The addition of Si gives rise to a progressive decrease of the lattice parameter, from about 2.865 Å for the binary Fe{sub 70}Co{sub 30} compound down to 2.841 Å for the powder with x=20. The sample with the uppermost Si content exhibits the lowest value for the mean grain size (≈10 nm) as well as the largest microstrain (above 1.1%). All the samples are ferromagnetic at room temperature, although the saturation magnetization value reduces almost linearly by adding Si to the composition. A similar trend is observed for the hyperfine magnetic field obtained from the analysis of the room temperature Mössbauer spectra. The hyperfine field distributions show a broad double-peak shape for x>0, which can be ascribed to multiple local environments for the Fe atoms inside a disordered solid solution. - Highlights: • Single-phase (Fe{sub 0.7}Co{sub 0.3}){sub 100−x}Si{sub x} nanostructured powders (x=0, 5, 10, 15 and 20) have been elaborated by mechanical alloying. • The sample with the uppermost Si content exhibits the lowest value for the mean grain size. • The magnetic and hyperfine parameters of (Fe{sub 0.7}Co{sub 0.3}){sub 100−x}Si{sub x} depended intimately on Si content.

  11. Boron Behavior Induced Lamellar Structure and Anisotropic Magnetic Properties of Nd{sub 2}Fe{sub 14}B during HDDR process

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Moonhee; Song, Yeonghwan [Samsung Electro-Mechanics, Suwon (Korea, Republic of); Cho, Seungchan; Jo, Ilguk; Yu, Jihun [Korea Institute of Materials Science, Changwon (Korea, Republic of); Kim, Chiho; Kim, Yangdo [Pusan National University, Busan (Korea, Republic of)

    2017-08-15

    The anisotropy of the Nd{sub 2}Fe{sub 14}B powder is originated during the creation of a fine Fe2B lamellar structure in the disproportionation step. The aspect ratio (A/R) of Fe2B structure increased from 3.37 ± 1.5 to 6.69 ± 3.2 during phase decomposition for 0 ∼ 60 min at 820 ℃ (P{sub H2} = 10 kPa). The Fe{sub 2}B having high A/R ratio recombined Nd{sub 2}Fe{sub 14}B, which is close to the single domain, and the magnetic properties are also improved with increasing A/R ratio.

  12. Interface interaction in the B4C/(Fe-B-C) system

    International Nuclear Information System (INIS)

    Aizenshtein, M.; Mizrahi, I.; Froumin, N.; Hayun, S.; Dariel, M.P.; Frage, N.

    2008-01-01

    The wetting behavior in the B 4 C/(Fe-C-B) system was investigated in order to clarify the role of Fe additions on the sinterability of B 4 C. Iron and its alloys with C and B react with the boron carbide substrate and form a reaction zone consisting of a fine mixture of FeB and graphite. The apparent contact angles are relatively low for the alloys with a moderate concentration of the boron and carbon and allow liquid phase sintering to occur in the B 4 C-Fe mixtures. A dilatometric study of the sintering kinetics confirms that liquid phase sintering actually takes place and leads to improved mass transfer. A thermodynamic analysis of the ternary Fe-B-C system allows accounting for the experimental observations

  13. High-rate and ultralong cycle-life LiFePO{sub 4} nanocrystals coated by boron-doped carbon as positive electrode for lithium-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Jinpeng, E-mail: goldminer@sina.com; Wang, Youlan

    2016-12-30

    Highlights: • B-doped carbon decorated LiFePO{sub 4} has been fabricated for the first time. • The LiFePO{sub 4}@B-CdisplaysimprovedbatteryperformancecomparedtoLiFePO{sub 4}@C. • The LiFePO{sub 4}@B-C is good candidate for high-performance lithium-ion batteries. - Abstract: An evolutionary modification approach, boron-doped carbon coating, has been used to improve the electrochemical performances of positive electrodes for lithium-ion batteries, and demonstrates apparent and significant modification effects. In this study, the boron-doped carbon coating is firstly adopted and used to decorate the performance of LiFePO{sub 4}. The obtained composite exhibits a unique core-shell structure with an average diameter of 140 nm and a 4 nm thick boron-doped carbon shell that uniformly encapsulates the core. Owing to the boron element which could induce high amount of defects in the carbon, the electronic conductivity of LiFePO{sub 4} is greatly ameliorated. Thus, the boron-doped composite shows superior rate capability and cycle stability than the undoped sample. For instance, the reversible specific capacity of LiFePO{sub 4}@B{sub 0.4}-C can reach 164.1 mAh g{sup −1} at 0.1C, which is approximately 96.5% of the theoretical capacity (170 mAh g{sup −1}). Even at high rate of 10C, it still shows a high specific capacity of 126.8 mAh g{sup −1} and can be maintained at 124.5 mAh g{sup −1} after 100 cycles with capacity retention ratio of about 98.2%. This outstanding Li-storage property enable the present design strategy to open up the possibility of fabricating the LiFePO{sub 4}@B-C composite for high-performance lithium-ion batteries.

  14. [Effects of silicon supply on diurnal variations of physiological properties at rice heading stage under elevated UV-B radiation].

    Science.gov (United States)

    Wu, Lei; Lou, Yun-sheng; Meng, Yan; Wang, Wei-qing; Cui, He-yang

    2015-01-01

    A pot experiment was conducted to investigate the effects of silicon (Si) supply on diurnal variations of photosynthesis and transpiration-related physiological parameters at rice heading stage under elevated UV-B radiation. The experiment was designed with two UV-B radiation levels, i.e. ambient UV-B. (ambient, A) and elevated UV-B (elevated by 20%, E), and four Si supply levels, i.e. Sio (control, 0 kg SiO2 . hm-2), Si, (sodium silicate, 100 kg SiO2 . hm-2), Si2 (sodium silicate, 200 kg SiO2 . hm2), Si3 (slag fertilizer, 200 kg SiO2 . hm-2). The results showed that, compared with ambient UV-B radiation, elevated UV-B radiation decreased the net photosynthesis rate (Pn) , intercellular CO2 concentration (Ci), transpiration rate (Tr), stomatal conductivity (gs) and water use efficiency (WUE) by 11.3%, 5.5%, 10.4%, 20.3% and 6.3%, respectively, in the treatment without Si supply (Si, level), and decreased the above parameters by 3.8%-5.5%, 0.7%-4.8%, 4.0%-8.7%, 7.4%-20.2% and 0.7%-5.9% in the treatments with Si supply (Si1, Si2 and Si3 levels) , respectively. Namely, elevated UV-B radiation decreased the photosynthesis and transpiration-related physiological parameters, but silicon supply could obviously mitigate the depressive effects of elevated UV-B radiation. Under elevated UV-B radiation, compared with control (Si0 level), silicon supply increased Pn, Ci, gs and WUE by 16.9%-28.0%, 3.5%-14.3%, 16.8% - 38.7% and 29.0% - 51.2%, respectively, but decreased Tr by 1.9% - 10.8% in the treatments with Si supply (Si1 , Si2 and Si3 levels). That is, silicon supply could mitigate the depressive effects of elevated UV-B radiation through significantly increasingnP., CigsgK and WUE, but decreasing T,. However, the difference existed in ameliorating the depressive effects of elevated UV-B radiation on diurnal variations of physiological parameters among the treatments of silicon supply, with the sequence of Si3>Si2>1i >Si0. This study suggested that fertilizing slag was

  15. Flux pinning and inhomogeneity in magnetic nanoparticle doped MgB2/Fe wires

    Science.gov (United States)

    Novosel, Nikolina; Pajić, Damir; Mustapić, Mislav; Babić, Emil; Shcherbakov, Andrey; Horvat, Joseph; Skoko, Željko; Zadro, Krešo

    2010-06-01

    The effects of magnetic nanoparticle doping on superconductivity of MgB2/Fe wires have been investigated. Fe2B and SiO2-coated Fe2B particles with average diameters 80 and 150 nm, respectively, were used as dopands. MgB2 wires with different nanoparticle contents (0, 3, 7.5, 12 wt.%) were sintered at temperature 750°C. The magnetoresistivity and critical current density Jc of wires were measured in the temperature range 2-40 K in magnetic field B doped wires decreases quite rapidly with doping level (~ 0.5 K per wt.%). This results in the reduction of the irreversibility fields Birr(T) and critical current densities Jc(B,T) in doped samples (both at low (5 K) and high temperatures (20 K)). Common scaling of Jc(B,T) curves for doped and undoped wires indicates that the main mechanism of flux pinning is the same in both types of samples. Rather curved Kramer's plots for Jc of doped wires imply considerable inhomogeneity.

  16. Fe_3O_4@B-MCM-41: A new magnetically recoverable nanostructured catalyst for the synthesis of polyhydroquinolines

    International Nuclear Information System (INIS)

    Abdollahi-Alibeik, Mohammad; Rezaeipoor-Anari, Ali

    2016-01-01

    Boron modified MCM-41 with magnetite core (Fe_3O_4@B-MCM-41) as a new magnetically recoverable heterogeneous catalyst was prepared and characterized by SEM, TEM, BET, XRD, VSM and FT-IR techniques. The catalytic activity of Fe_3O_4@B-MCM-41 was investigated in the four-component reaction of aldehyde, dimedone, active methylene compounds and ammonium acetate for the synthesis of polyhydroquinolines. According to optimization and characterization results the catalyst with Si:B:Fe_3O_4 mole composition of 40:4:1 has the best activity. The catalyst could be recovered easily by external magnet and has excellent reusability many times without significant decrease of activity. - Highlights: • Core–shell Fe_3O_4@MCM-41 nanoparticles modified by boron (Fe_3O_4@B-MCM-41). • Fe_3O_4@B-MCM-41 as reusable catalyst for the synthesis of polyhydroquinolines. • Characterization of Fe_3O_4@B-MCM-41 using SEM, TEM, BET, XRD and FT-IR techniques.

  17. Corrosion resistance of sintered NdFeB coated with SiC/Al bilayer thin films by magnetron sputtering

    Science.gov (United States)

    Huang, Yiqin; Li, Heqin; Zuo, Min; Tao, Lei; Wang, Wei; Zhang, Jing; Tang, Qiong; Bai, Peiwen

    2016-07-01

    The poor corrosion resistance of sintered NdFeB imposes a great challenge in industrial applications. In this work, the SiC/Al bilayer thin films with the thickness of 510 nm were deposited on sintered NdFeB by magnetron sputtering to improve the corrosion resistance. A 100 nm Al buffer film was used to reduce the internal stress between SiC and NdFeB and improve the surface roughness of the SiC thin film. The morphologies and structures of SiC/Al bilayer thin films and SiC monolayer film were investigated with FESEM, AFM and X-ray diffraction. The corrosion behaviors of sintered NdFeB coated with SiC monolayer film and SiC/Al bilayer thin films were analyzed by polarization curves. The magnetic properties were measured with an ultra-high coercivity permanent magnet pulse tester. The results show that the surface of SiC/Al bilayer thin films is more compact and uniform than that of SiC monolayer film. The corrosion current densities of SiC/Al bilayer films coated on NdFeB in acid, alkali and salt solutions are much lower than that of SiC monolayer film. The SiC/Al bilayer thin films have little influence to the magnetic properties of NdFeB.

  18. Microstructure and mechanical properties of a new type of austempered boron alloyed high silicon cast steel

    Directory of Open Access Journals (Sweden)

    Chen Xiang

    2013-05-01

    Full Text Available In the present paper, a new type of austempered boron alloyed high silicon cast steel has been developed, and its microstructures and mechanical properties at different temperatures were investigated. The experimental results indicate that the boron alloyed high silicon cast steel comprises a dendritic matrix and interdendritic eutectic borides in as-cast condition. The dendritic matrix is made up of pearlite, ferrite, and the interdendritic eutectic boride is with a chemical formula of M2B (M represents Fe, Cr, Mn or Mo which is much like that of carbide in high chromium white cast iron. Pure ausferrite structure that consists of bainitic ferrite and retained austenite can be obtained in the matrix by austempering treatment to the cast steel. No carbides precipitate in the ausferrite structure and the morphology of borides remains almost unchanged after austempering treatments. Secondary boride particles precipitate during the course of austenitizing. The hardness and tensile strength of the austempered cast steel decrease with the increase of the austempering temperature, from 250 篊 to 400 篊. The impact toughness is 4-11 J昪m-2 at room temperature and the impact fracture fractogragh indicates that the fracture is caused by the brittle fracture of the borides.

  19. Boron and Nitrogen Codoped Carbon Layers of LiFePO4 Improve the High-Rate Electrochemical Performance for Lithium Ion Batteries.

    Science.gov (United States)

    Zhang, Jinli; Nie, Ning; Liu, Yuanyuan; Wang, Jiao; Yu, Feng; Gu, Junjie; Li, Wei

    2015-09-16

    An evolutionary composite of LiFePO4 with nitrogen and boron codoped carbon layers was prepared by processing hydrothermal-synthesized LiFePO4. This novel codoping method is successfully applied to LiFePO4 for commercial use, and it achieved excellent electrochemical performance. The electrochemical performance can be improved through single nitrogen doping (LiFePO4/C-N) or boron doping (LiFePO4/C-B). When modifying the LiFePO4/C-B with nitrogen (to synthesis LiFePO4/C-B+N) the undesired nonconducting N-B configurations (190.1 and 397.9 eV) are generated. This decreases the electronic conductivity from 2.56×10(-2) to 1.30×10(-2) S cm(-1) resulting in weak electrochemical performance. Nevertheless, using the opposite order to decorate LiFePO4/C-N with boron (to obtain LiFePO4/C-N+B) not only eliminates the nonconducting N-B impurity, but also promotes the conductive C-N (398.3, 400.3, and 401.1 eV) and C-B (189.5 eV) configurations-this markedly improves the electronic conductivity to 1.36×10(-1) S cm(-1). Meanwhile the positive doping strategy leads to synergistic electrochemical activity distinctly compared with single N- or B-doped materials (even much better than their sum capacity at 20 C). Moreover, due to the electron and hole-type carriers donated by nitrogen and boron atoms, the N+B codoped carbon coating tremendously enhances the electrochemical property: at the rate of 20 C, the codoped sample can elevate the discharge capacity of LFP/C from 101.1 mAh g(-1) to 121.6 mAh g(-1), and the codoped product based on commercial LiFePO4/C shows a discharge capacity of 78.4 mAh g(-1) rather than 48.1 mAh g(-1). Nevertheless, the B+N codoped sample decreases the discharge capacity of LFP/C from 101.1 mAh g(-1) to 95.4 mAh g(-1), while the commercial LFP/C changes from 48.1 mAh g(-1) to 40.6 mAh g(-1).

  20. SERS active Ag encapsulated Fe@SiO2 nanorods in electromagnetic wave absorption and crystal violet detection.

    Science.gov (United States)

    Senapati, Samarpita; Srivastava, Suneel Kumar; Singh, Shiv Brat; Kulkarni, Ajit R

    2014-11-01

    The present work is focused on the preparation of Fe nanorods by the chemical reduction of FeCl3 (aq) using NaBH4 in the presence of glycerol as template followed by annealing of the product at 500°C in the presence of H2 gas flow. Subsequently, its surface has been modified by silica followed by silver nanoparticles to form silica coated Fe (Fe@SiO2) and Ag encapsulated Fe@SiO2 nanostructure employing the Stöber method and silver mirror reaction respectively. XRD pattern of the products confirmed the formation of bcc phase of iron and fcc phase of silver, though silica remained amorphous. FESEM images established the growth of iron nanorods from the annealed product and also formation of silica and silver coating on its surface. The appearance of the characteristics bands in FTIR confirmed the presence of SiO2 on the Fe surface. Magnetic measurements at room temperature indicated the ferromagnetic behavior of as prepared iron nanorods, Fe@SiO2 and silver encapsulated Fe@SiO2 nanostructures. All the samples exhibited strong microwave absorption property in the high frequency range (10GHz), though it is superior for Ag encapsulated Fe@SiO2 (-14.7dB) compared with Fe@SiO2 (-9.7dB) nanostructures of the same thickness. The synthesized Ag encapsulated Fe@SiO2 nanostructure also exhibited the SERS phenomena, which is useful in the detection of the carcinogenic dye crystal violet (CV) upto the concentration of 10(-10)M. All these findings clearly demonstrate that the Ag encapsulated Fe@SiO2 nanostructure could efficiently be used in the environmental remediation. Copyright © 2014 Elsevier Inc. All rights reserved.

  1. Thermal treatment induced modification of structural, surface and bulk magnetic properties of Fe61.5Co5Ni8Si13.5B9Nb3 metallic glass

    Science.gov (United States)

    Shah, M.; Satalkar, M.; Kane, S. N.; Ghodke, N. L.; Sinha, A. K.; Varga, L. K.; Teixeira, J. M.; Araujo, J. P.

    2018-05-01

    Effect of thermal annealing induced modification of structural, surface and bulk magnetic properties of Fe61.5Co5Ni8Si13.5B9Nb3 alloy is presented. The changes in properties were observed using synchrotron x-ray diffraction technique (SXRD), atomic force microscopy (AFM), magneto-optical kerr effect (MOKE) and bulk magnetic measurements. Significant variations on the both side of surface occur for the annealing temperature upto 500 °C promotes the surface crystallization. Surface roughness appears due to presence of nanocrystallization plays an important role in determining magnetic properties. Observed lower value of bulk coercivity Hc of 6.2 A/m annealed temperature at 450 °C/1 h ascribed to reduction of disorder as compared to the surface (both shiny and wheel side observed by MOKE measurement) whereas improvement of bulk saturation magnetization with annealing temperature indicates first near neighbor shell of Fe atoms are surrounded by Fe atoms. Evolution of coercivity of surface and bulk with annealing temperature has been presented in conjunction with the structural observations.

  2. Preparation and characterization of Fe3O4/SiO2/Bi2MoO6 composite as magnetically separable photocatalyst

    International Nuclear Information System (INIS)

    Hou, Xuemei; Tian, Yanlong; Zhang, Xiang; Dou, Shuliang; Pan, Lei; Wang, Wenjia; Li, Yao; Zhao, Jiupeng

    2015-01-01

    Highlights: • Fe 3 O 4 /SiO 2 /Bi 2 MoO 6 composite was prepared by a hydrothermal method. • The composite has an enhanced visible absorption compared with pure Bi 2 MoO 6 . • The magnetic photocatalyst displayed excellent stability and reusability. • O 2 ·− and · OH play a major role during the photocatalytic process. - Abstract: In this paper, Fe 3 O 4 /SiO 2 /Bi 2 MoO 6 microspheres were prepared by a facile hydrothermal method. The scanning electron microscope (SEM) results revealed that flower-like three dimensional (3D) Bi 2 MoO 6 microspheres were decorated with Fe 3 O 4 /SiO 2 magnetic nanoparticles. The UV–vis diffuse reflection spectra showed extended absorption within the visible light range compared with pure Bi 2 MoO 6 . We evaluated the photocatalytic activities of Fe 3 O 4 /SiO 2 /Bi 2 MoO 6 microspheres on the degradation of Rhodamine B (RhB) under visible light irradiation and found that the obtained composite exhibited higher photocatalytic activity than pure Bi 2 MoO 6 and P25. Moreover, the Fe 3 O 4 /SiO 2 /Bi 2 MoO 6 composite also displayed excellent stability and their photocatalytic activity decreased slightly after reusing 5 cycles. Meanwhile, the composite could be easily separated by applying an external magnetic field. The trapping experiment results suggest that superoxide radical species O 2 ·− and hydroxyl radicals · OH play a major role in Fe 3 O 4 /SiO 2 /Bi 2 MoO 6 system under visible light irradiation. The combination of flower-like three dimensional (3D) Bi 2 MoO 6 microspheres and Fe 3 O 4 /SiO 2 magnetic nanospheres provides a useful strategy for designing multifunctional nanostructure materials with enhanced photocatalytic activities in the potential applications of water purification

  3. Effect of boron addition on the magnetic properties of the Fe-Nd-Al alloys prepared by suction casting

    International Nuclear Information System (INIS)

    Bai, Q.; Xu, H.; Tan, X.H.; Zhang, S.Y.

    2007-01-01

    The microstructure and magnetic properties of the Fe-Nd-Al alloys prepared by suction casting with boron addition have been investigated. The increasing boron content in the Fe-Nd-Al alloys significantly increases the intrinsic coercivity ( i H c ) and decreases the proportion of the amorphous phase. The magnetization at the maximum applied field (σ ' s ) of the Fe-Nd-Al-B alloys decreases, while the coercivity increases markedly after annealing. The high intrinsic coercivity is due to the presence of the Nd 2 Fe 14 B phase

  4. Bismuth-boron multiple bonding in BiB{sub 2}O{sup -} and Bi{sub 2}B{sup -}

    Energy Technology Data Exchange (ETDEWEB)

    Jian, Tian; Cheung, Ling Fung; Chen, Teng-Teng; Wang, Lai-Sheng [Department of Chemistry, Brown University, Providence, RI (United States)

    2017-08-01

    Despite its electron deficiency, boron is versatile in forming multiple bonds. Transition-metal-boron double bonding is known, but boron-metal triple bonds have been elusive. Two bismuth boron cluster anions, BiB{sub 2}O{sup -} and Bi{sub 2}B{sup -}, containing triple and double B-Bi bonds are presented. The BiB{sub 2}O{sup -} and Bi{sub 2}B{sup -} clusters are produced by laser vaporization of a mixed B/Bi target and characterized by photoelectron spectroscopy and ab initio calculations. Well-resolved photoelectron spectra are obtained and interpreted with the help of ab initio calculations, which show that both species are linear. Chemical bonding analyses reveal that Bi forms triple and double bonds with boron in BiB{sub 2}O{sup -} ([Bi≡B-B≡O]{sup -}) and Bi{sub 2}B{sup -} ([Bi=B=Bi]{sup -}), respectively. The Bi-B double and triple bond strengths are calculated to be 3.21 and 4.70 eV, respectively. This is the first experimental observation of Bi-B double and triple bonds, opening the door to design main-group metal-boron complexes with multiple bonding. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Computer simulation of monolayer growth kinetics of Fe2B phase during the paste-boriding process: Influence of the paste thickness

    International Nuclear Information System (INIS)

    Keddam, M.

    2006-01-01

    This paper deals with the effect of boron paste thickness on the study of the monolayer growth kinetics of Fe 2 B phase forming on AISI 1045 steel by the paste-boriding process. A mathematical diffusion model based on the Fick's phenomenological equations was applied in order to estimate the growth rate constant at (Fe 2 B/γ-Fe) interface, the layer thickness of iron boride as well as the associated mass gain depending on the boriding parameters such as time, temperature and surface boron concentration related to the boron paste thickness. The simulation results are found to be in a fairly good agreement with the experimental data derived from the literature

  6. Structural and electronic properties of metalloporphyrin (MP, M = Fe, Co and Zn) adsorbed on single walled BNNT and SiCNT

    Energy Technology Data Exchange (ETDEWEB)

    Rezvani, M. [Department of Chemistry, Faculty of Science, Arak Branch, Islamic Azad University, Arak (Iran, Islamic Republic of); Darvish Ganji, M., E-mail: ganji_md@yahoo.com [Department of Nanochemistry, Faculty of Pharmaceutical Chemistry, Pharmaceutical Sciences Branch, Islamic Azad University (IAUPS), Tehran (Iran, Islamic Republic of); Jameh-Bozorghi, S. [Department of Chemistry, Faculty of Science, Hamedan Branch, Islamic Azad University, Hamedan (Iran, Islamic Republic of)

    2016-01-01

    Graphical abstract: First-principles calculations showed that SiCNTs is a very promising candidate for metalloporphyrin adsorption and sensing/detection. - Highlights: • Theoretical study of MPs adsorption on SiCNT and BNNT were studied. • The interaction FeP with SiCNT is stronger than the other counterparts. • The interaction of FeP with SiCNT is six times stronger than with BNNT. • The FeP-BNNT complex might be suitable material for spintronics. • SiCNTs are very promising candidate for MPs adsorption and sensing. - Abstract: In the present work, we report a detailed theoretical investigation of a series of metalloporphyrin, MP (M = FeP, CoP and ZnP), molecules interacting with silicon carbide nanotube (SiCNT) by means of density functional theory (DFT) calculations. In all calculations, we used the Perdew–Burke–Erzenhof (PBE) functional as employed in the SIESTA package. The detailed analysis of the structural and electronical properties of various optimized configurations is performed. The results show that among the MPs, adsorption of FeP molecule on the Si site with zigzag orientation is the most energetically preferable with a binding energy of −2.10 eV. Compared to SiCNTs, boron nitride nanotubes (BNNTs) have weaker interaction strength with the FeP molecule with −0.34 eV of binding energy. We have analyzed charge transfer between two interacting species trough well-known Mulliken, Hirshfeld and Voronoi charges analysis for aforementioned systems. The spin-polarized DFT calculations showed that the density of states (DOSs) are spin-polarized for the Fe-BNNT complex while the spin-polarization of the DOS spectra turn out to be less notable for MP-SiCNT complexes. Our results propose that FeP-SiCNT complex could be used for interesting applications in solar cell technology and nano-biosensors while FeP-BNNT complex might be considered for spintronic molecular devices.

  7. Luminescence properties of Ce3+-activated alkaline earth silicon nitride M2Si5N8 (M = Ca, Sr, Ba) materials

    NARCIS (Netherlands)

    Li, Y.Q.; With, de G.; Hintzen, H.T.J.M.

    2006-01-01

    The luminescence properties of Ce3+, Li+ or Na+ co-doped alkaline-earth silicon nitride M2Si5N8 (M=Ca, Sr, Ba) are reported. The solubility of Ce3+ and optical properties of M2-2xCexLixSi5N8 (x0.1) materials have been investigated as function of the cerium concentration by X-ray powder diffraction

  8. Effect of mechanical activation on jell boronizing treatment of the AISI 4140

    International Nuclear Information System (INIS)

    Yılmaz, S.O.; Karataş, S.

    2013-01-01

    The article presents the effect of mechanical activation on the growth kinetics of boride layer of boronized AISI 4140 steel. The samples were boronized by ferroboron + (SiO 2 –Na 2 O) powders for 873–1173 K temperature and 2, 4, 6 and 8 h times, respectively. The morphology and types of borides formed on the surface of AISI 4140 steel substrate were analyzed. Layer growth kinetics were analyzed by measuring the extent of penetration of FeB and Fe 2 B sublayers as function of treatment time and temperature in the range of 873–1173 K. High diffusivity was obtained by creating a large number of defects through mechanical activation in the form of nanometer sized crystalline particles through the repeated fracturing and cold-welding of the powder particles, and a depth of 100 μm was found in the specimen borided by the 2 h MA powders, for 4 h and 1073 K, where 2000–2350 HV were measured. Consequently, the application conditions of boronizing were improved by usage of mechanical activation. The preferred Fe 2 B boride without FeB could be formed in the boride layer under 973 K boronizing temperature by mechanically activated by ferroboron + sodium silicate powder mixture due to the decrease of the activation energy.

  9. Effect of mechanical activation on jell boronizing treatment of the AISI 4140

    Energy Technology Data Exchange (ETDEWEB)

    Yılmaz, S.O., E-mail: osyilmaz@firat.edu.tr [F.U. Engineering Faculty, Metallurgical and Material Science, 23119 Elazığ (Turkey); Karataş, S. [F.U. Engineering Faculty, Metallurgical and Material Science, 23119 Elazığ (Turkey)

    2013-06-15

    The article presents the effect of mechanical activation on the growth kinetics of boride layer of boronized AISI 4140 steel. The samples were boronized by ferroboron + (SiO{sub 2}–Na{sub 2}O) powders for 873–1173 K temperature and 2, 4, 6 and 8 h times, respectively. The morphology and types of borides formed on the surface of AISI 4140 steel substrate were analyzed. Layer growth kinetics were analyzed by measuring the extent of penetration of FeB and Fe{sub 2}B sublayers as function of treatment time and temperature in the range of 873–1173 K. High diffusivity was obtained by creating a large number of defects through mechanical activation in the form of nanometer sized crystalline particles through the repeated fracturing and cold-welding of the powder particles, and a depth of 100 μm was found in the specimen borided by the 2 h MA powders, for 4 h and 1073 K, where 2000–2350 HV were measured. Consequently, the application conditions of boronizing were improved by usage of mechanical activation. The preferred Fe{sub 2}B boride without FeB could be formed in the boride layer under 973 K boronizing temperature by mechanically activated by ferroboron + sodium silicate powder mixture due to the decrease of the activation energy.

  10. Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

    KAUST Repository

    Bahabry, R. R.; Gumus, A.; Kutbee, A. T.; Wehbe, N.; Ahmed, S. M.; Ghoneim, M. T.; Lee, K. -T.; Rogers, J. A.; Hussain, M. M.

    2016-01-01

    We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.

  11. Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

    KAUST Repository

    Bahabry, R. R.

    2016-11-30

    We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.

  12. Effect of Co on Si and Fe-containing intermetallic compounds (IMCs) in Al–20Si–5Fe alloys

    International Nuclear Information System (INIS)

    Fatih Kilicaslan, M.; Yilmaz, Fikret; Hong, Soon-Jik; Uzun, Orhan

    2012-01-01

    The effects of cobalt addition on microstructure and mechanical properties of Al–20Si–5Fe–XCo (X=0, 1, 3, and 5) alloys were reported in this study. The alloys were produced by both conventional sand casting and melt-spinning at 20 m/s disk velocity. Microstructures of the samples were investigated using X-ray diffractometry (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Vickers micro-hardness tester was used for hardness measurements. Results showed that Co addition can alter morphology of Fe-bearing intermetallic compounds (IMCs) from long rod/needle-like structures to short rod-like ones, and lead to a more homogenous distribution in the microstructure. Addition of 5 wt% Co leads to a decrease in average size of the primary silicon phases in as-cast Al–Si alloys. In melt-spun alloys, with the addition of Co, the microstructure became finer and more homogenously distributed, while thickness of the featureless zone has seen great increase. The optimum Fe to Co ratio was found to be 1 for suppressing the undesirable effect of Fe-bearing acicular/needle-like intermetallic compounds.

  13. Microstructure of AlSi17Cu5 alloy after overheating over liquidus temperature

    Directory of Open Access Journals (Sweden)

    J. Piątkowski

    2015-01-01

    Full Text Available The paper presents microstructure tests of alloy AlSi17Cu5. In order to disintegrate the primary grain of silicon the so-called time-temperature transformation TTT was applied which was based on overheating the liquid alloy way over the temperature Tliq., soaking in it for 30 minutes and casting it to a casting mould. It was found that such process causes the achievement of fine-crystalline structure and primary silicon crystals take up the form of pentahedra or frustums of pyramids. With the use of X-ray microanalysis and X-ray diffraction analysis the presence of intermetallic phases Al2Cu, Al4Cu9 which are the ingredients of eutectics α - AlCu - β and phase Al9Fe2Si which is a part of eutectic α - AlFeSi - β was confirmed.

  14. Large magnetic entropy change in melt-spun LaFe11.5Si1.5 ribbons

    International Nuclear Information System (INIS)

    Xie Kun; Song Xiaoping; Zhu Yaoming; Lv Weipeng; Sun Zhanbo

    2004-01-01

    The microstructure transformation and the magnetic entropy change of LaFe 11.5 Si 1.5 melt-spun ribbons were investigated. The melt-spun ribbons show a homogeneous distribution of elements, and the homogeneity develops further after 5 h annealing. XRD results show that the ribbons are composed of NaZn 13 -type LaFe 11.5 Si 1.5 compounds and an α-Fe phase. After annealing, the ribbons crystallize well in the NaZn 13 -type structure and exhibit a very large magnetic entropy change. A first-order magnetic transition is observed in the annealed ribbons, and this is believed to be the origin of the large magnetic entropy. These results suggest that NaZn 13 -type LaFe 11.5 Si 1.5 compounds with a large magnetic entropy change can be produced by melt-spinning, the annealing time can be shortened significantly and the production cost of the magnetic refrigerant will be cut down accordingly

  15. Magnetic SiO2/Fe3O4 colloidal crystals

    International Nuclear Information System (INIS)

    Huang, C-K; Hou, C-H; Chen, C-C; Tsai, Y-L; Chang, L-M; Wei, H-S; Hsieh, K-H; Chan, C-H

    2008-01-01

    We proposed a novel technique to fabricate colloidal crystals by using monodisperse SiO 2 coated magnetic Fe 3 O 4 (SiO 2 /Fe 3 O 4 ) microspheres. The magnetic SiO 2 /Fe 3 O 4 microspheres with a diameter of 700 nm were synthesized in the basic condition with ferric sulfate, ferrous sulfate, tartaric acid and tetraethyl orthosilicate (TEOS) in the reaction system. Monodisperse SiO 2 /Fe 3 O 4 superparamagnetic microspheres have been successfully used to fabricate colloidal crystals under the existing magnetic field

  16. Synthesis, structure and chemical bonding of CaFe2−xRhxSi2 (x=0, 1.32, and 2) and SrCo2Si2

    International Nuclear Information System (INIS)

    Hlukhyy, Viktor; Hoffmann, Andrea V.; Fässler, Thomas F.

    2013-01-01

    The finding of superconductivity in Ba 0.6 K 0.4 Fe 2 As 2 put the attention on the investigation of compounds that crystallize with ThCr 2 Si 2 structure type such as AT 2 X 2 (A=alkali/alkaline earth/rare earth element; T=transition metal and X=element of the 13–15th group). In this context the silicides CaFe 2 Si 2 , CaFe 0.68(6) Rh 1.32(6) Si 2 , CaRh 2 Si 2 and SrCo 2 Si 2 have been synthesized by reaction of the elements under an argon atmosphere. Single crystals were obtained by special heat treatment in welded niobium/tantalum ampoules. The compounds were investigated by means of powder and single crystal X-ray diffraction. All compounds crystallize in the ThCr 2 Si 2 -type structure with space group I4/mmm (No. 139): a=3.939(1) Å, c=10.185(1) Å, R 1 =0.045, 85 F 2 values, 8 variable parameters for CaFe 2 Si 2 ; a=4.0590(2) Å, c=9.9390(8) Å, R 1 =0.030, 90 F 2 values, 10 variable parameters for CaFe 0.68(6) Rh 1.32(6) Si 2 ; a=4.0695(1) Å, c=9.9841(3) Å, R 1 =0.031, 114 F 2 values, 9 variable parameters for CaRh 2 Si 2 ; and a=3.974(1) Å, c=10.395(1) Å, R 1 =0.036, 95 F 2 values, 8 variable parameters for SrCo 2 Si 2 . The structure of SrCo 2 Si 2 contains isolated [Co 2 Si 2 ] 22D-layers in the ab-plane whereas in CaFe 2−x Rh x Si 2 the [T 2 Si 2 ] layers (T=Fe and Rh) are interconnected along the c-axis via Si3Si bonds resulting in a three-dimentional (3D) [T 2 Si 2 ] 2− polyanions and therefore belong to the so-called collapsed form of the ThCr 2 Si 2 -type structure. The SrCo 2 Si 2 and CaRh 2 Si 2 are isoelectronic to the parent 122 iron–pnictide superconductors AeFe 2 As 2 (Ae=alkaline earth elements), whereas CaFe 2 Si 2 is a full substituted variant (As/Si) of CaFe 2 As 2 . The crystal chemistry and chemical bonding in the title compounds are discussed in terms of LMTO band structure calculations and a topological analysis using the Electron Localization Function (ELF). - Graphical abstract: The SrCo 2 Si 2 and CaFe 2−x Rh x Si

  17. Interface interaction in the B{sub 4}C/(Fe-B-C) system

    Energy Technology Data Exchange (ETDEWEB)

    Aizenshtein, M. [Department of Material Engineering, Ben-Gurion University, P.O. Box 653, Beer-Sheva 84105 (Israel); NRC-Negev, P.O. Box 9001, Beer-Sheva 84190 (Israel); Mizrahi, I.; Froumin, N.; Hayun, S.; Dariel, M.P. [Department of Material Engineering, Ben-Gurion University, P.O. Box 653, Beer-Sheva 84105 (Israel); Frage, N. [Department of Material Engineering, Ben-Gurion University, P.O. Box 653, Beer-Sheva 84105 (Israel)], E-mail: nfrage@bgu.ac.il

    2008-11-15

    The wetting behavior in the B{sub 4}C/(Fe-C-B) system was investigated in order to clarify the role of Fe additions on the sinterability of B{sub 4}C. Iron and its alloys with C and B react with the boron carbide substrate and form a reaction zone consisting of a fine mixture of FeB and graphite. The apparent contact angles are relatively low for the alloys with a moderate concentration of the boron and carbon and allow liquid phase sintering to occur in the B{sub 4}C-Fe mixtures. A dilatometric study of the sintering kinetics confirms that liquid phase sintering actually takes place and leads to improved mass transfer. A thermodynamic analysis of the ternary Fe-B-C system allows accounting for the experimental observations.

  18. Electronic Structures Localized at the Boron Atom in Amorphous Fe-B and Fe-B-P Alloys

    Science.gov (United States)

    Yasuda, Hidehiro; Nakayama, Hiroshi; Fujita, Hiroshi

    1989-11-01

    The electronic structures localized at the B in amorphous Fe-B and Fe-B-P alloys and their crystallized alloys were studied by Auger valence electron spectroscopy and the states of solute B are discussed based on the change in the degree of covalent bonding and the charge transfer between the Fe and B atoms. In amorphous phases, the charge transfers from Fe to B above 15at%B where B atoms occupy the substitutionallike situations, and from B to Fe below 15at%B where B atoms occupy the interstitiallike situations. Magnetic properties depend on such states of solute B. In crystalline phases, covalent bonding becomes dominant because the electron excitation occurs to the B2p state. Consequently, amorphous phases are more metallic in character than crystalline phases and amorphous structures are stabilized by a mixture of more than two different bonding states.

  19. Self-assembly and electrical characteristics of 4-pentynoic acid functionalized Fe3O4-γ-Fe2O3 nanoparticles on SiO2/n-Si

    Science.gov (United States)

    Baharuddin, Aainaa Aqilah; Ang, Bee Chin; Wong, Yew Hoong

    2017-11-01

    A novel investigation on a relationship between temperature-influential self-assembly (70-300 °C) of 4-pentynoic acid functionalized Fe3O4-γ-Fe2O3 nanoparticles (NPs) on SiO2/n-Si with electrical properties was reported with the interests for metal-oxide-semiconductor applications. X-ray diffractometer (XRD) analysis conveyed that 8 ± 1 nm of the NPs were assembled. Increasing heating temperature induced growth of native oxide (SiO2). Raman analysis confirmed the coexistence of Fe3O4-γ-Fe2O3. Attenuated Total Reflectance Infrared (ATR-IR) spectra showed that self-assembly occurred via Sisbnd Osbnd C linkages. While Sisbnd Osbnd C linkages were broken down at elevated temperatures, formations of Si-OH defects were amplified; a consequence of physisorbed surfactants disintegration. Atomic force microscopy (AFM) showed that sample with more physisorbed surfactants exhibited the highest root-mean-square (RMS) roughness (18.12 ± 7.13 nm) whereas sample with lesser physisorbed surfactants displayed otherwise (12.99 ± 4.39 nm RMS roughness). Field Emission Scanning Electron Microscope (FE-SEM) analysis showed non-uniform aggregation of the NPs, deposited as film (12.6 μm thickness). The increased saturation magnetization (71.527 A m2/kg) and coercivity (929.942 A/m) acquired by vibrating sample magnetometer (VSM) of the sample heated at 300 °C verified the surfactants' disintegration. Leakage current density-electric field (J-E) characteristics showed that sample heated at 150 °C with the most aggregated NPs as well as the most developed Sisbnd Osbnd C linkages demonstrated the highest breakdown field and barrier height at 2.58 × 10-3 MV/cm and 0.38 eV respectively. Whereas sample heated at 300 °C with the least Sisbnd Osbnd C linkages as well as lesser aggregated NPs showed the lowest breakdown field and barrier height at 1.08 × 10-3 MV/cm and 0.19 eV respectively. This study opens up better understandings on how formation and breaking down of covalent

  20. Magnetoimpedance of stress and/or field annealed Fe73.5Cu1Nb3Si15.5B7 amorphous and nanocrystalline ribbon

    International Nuclear Information System (INIS)

    Miguel, C.; Zhukov, A.P.; Gonzalez, J.

    2003-01-01

    Magnetoimpedance (MI) response of as-cast and annealed Fe 73.5 Cu 1 Nb 3 Si 15.5 B 7 amorphous alloy ribbon has been investigated. The thermal treatments were performed by current annealing technique (density 45 A/mm 2 during 1-120 min) under the action of a tensile stress of 500 MPa and/or an axial magnetic field of 750 A/m. For short annealing time (less than 5 min), the three kinds of treatment induced an uniaxial magnetic anisotropy in the amorphous state with a maximum of MI of 15%, while for long annealing the nanocrystallization process occurs with larger MI effect of around 22%. This MI behaviour is explained taking into account the role of the induced magnetic anisotropy and the microstructural changes owing to the thermal treatments

  1. Boron, phosphorus, and gallium determination in silicon crystals doped with gallium

    International Nuclear Information System (INIS)

    Shklyar, B.L.; Dankovskij, Yu.V.; Trubitsyn, Yu.V.

    1989-01-01

    When studying IR transmission spectra of silicon doped with gallium in the range of concentrations 1 x 10 14 - 5 x 10 16 cm -3 , the possibility to quantity at low (∼ 20 K) temperatures residual impurities of boron and phosphorus is ascertained. The lower determination limit of boron is 1 x 10 12 cm -3 for a sample of 10 nm thick. The level of the impurities in silicon crystals, grown by the Czochralski method and method of crucible-free zone melting, is measured. Values of boron and phosphorus concentrations prior to and after their alloying with gallium are compared

  2. Plasmonic Properties of Silicon Nanocrystals Doped with Boron and Phosphorus.

    Science.gov (United States)

    Kramer, Nicolaas J; Schramke, Katelyn S; Kortshagen, Uwe R

    2015-08-12

    Degenerately doped silicon nanocrystals are appealing plasmonic materials due to silicon's low cost and low toxicity. While surface plasmonic resonances of boron-doped and phosphorus-doped silicon nanocrystals were recently observed, there currently is poor understanding of the effect of surface conditions on their plasmonic behavior. Here, we demonstrate that phosphorus-doped silicon nanocrystals exhibit a plasmon resonance immediately after their synthesis but may lose their plasmonic response with oxidation. In contrast, boron-doped nanocrystals initially do not exhibit plasmonic response but become plasmonically active through postsynthesis oxidation or annealing. We interpret these results in terms of substitutional doping being the dominant doping mechanism for phosphorus-doped silicon nanocrystals, with oxidation-induced defects trapping free electrons. The behavior of boron-doped silicon nanocrystals is more consistent with a strong contribution of surface doping. Importantly, boron-doped silicon nanocrystals exhibit air-stable plasmonic behavior over periods of more than a year.

  3. Quantum mechanically guided design of Co43Fe20Ta5.5X31.5 (X=B, Si, P, S) metallic glasses

    International Nuclear Information System (INIS)

    Hostert, C; Music, D; Schneider, J M; Bednarcik, J; Keckes, J

    2012-01-01

    A systematic ab initio molecular dynamics study was carried out to identify valence electron concentration and size induced changes on structure, elastic and magnetic properties for Co 43 Fe 20 Ta 5.5 X 31.5 (X=B, Si, P, S). Short range order, charge transfer and the bonding nature are analyzed by means of density of states, Bader decomposition and pair distribution function analysis. A clear trend of a decrease in density and bulk modulus as well as a weaker cohesion was observed as the valence electron concentration is increased by replacing B with Si and further with P and S. These changes may be understood based on increased interatomic distances, variations in coordination numbers and the electronic structure changes; as the valence electron concentration of X is increased the X bonding becomes more ionic, which disrupts the overall metallic interactions, leading to lower cohesion and stiffness. The highest magnetic moments for the transition metals are identified for X=S, despite the fact that the presence of X generally reduces the magnetic moment of Co. Furthermore, this study reveals an extended diagonal relationship between B and P within these amorphous alloys. Based on quantum mechanical data we identify composition induced changes in short range order, charge transfer and bonding nature and link them to density, elasticity and magnetism. The interplay between transition metal d band filling and s-d hybridization was identified to be a key materials design criterion. (paper)

  4. Synchronized Re-Entrant Flux Reversal of Multiple FeSiB Amorphous Wires Having the Larger Output

    Science.gov (United States)

    Takajo, Minoru; Yamasaki, Jiro

    Technique to synchronize the re-entrant flux reversal of the multiple magnetostrictive Fe77.5Si7.5B15 amorphous wires was developed using a flux keeper of amorphous ribbons contacted to the wire ends. It is comprehended that the characteristics of the re-entrant flux takes place respectively at almost the same time in the three Fe-Si-B amorphous wires with a diameter of 65, 95μm. This phenomenon can be explained by considering the strong magnetic coupling of wires and amorphous ribbon by stray field from the each wire ends. As a result, the magnitude of the induced voltage in the sense coil is increased in proportion to the multiplication of the number of the wires.

  5. Evolution of Fe based intermetallic phases in Al–Si hypoeutectic casting alloys: Influence of the Si and Fe concentrations, and solidification rate

    International Nuclear Information System (INIS)

    Gorny, Anton; Manickaraj, Jeyakumar; Cai, Zhonghou; Shankar, Sumanth

    2013-01-01

    Highlights: •Anomalous evolution of Fe based intermetallic phases in Al–Si–Fe alloys. •XRF coupled with nano-diffraction to confirm the nano-size Fe intermetallic phases. •Crystallography of the θ-Al 13 Fe 4 , τ 5 -Al 8 Fe 2 Si and τ 6 -Al 9 Fe 2 Si 2 phases. •Peritectic reactions involving the Fe intermetallic phases in Al–Si–Fe alloys. -- Abstract: Al–Si–Fe hypoeutectic cast alloy system is very complex and reported to produce numerous Fe based intermetallic phases in conjunction with Al and Si. This publication will address the anomalies of phase evolution in the Al–Si–Fe hypoeutectic casting alloy system; the anomaly lies in the peculiarities in the evolution and nature of the intermetallic phases when compared to the thermodynamic phase diagram predictions and past publications of the same. The influence of the following parameters, in various combinations, on the evolution and nature of the intermetallic phases were analyzed and reported: concentration of Si between 2 and 12.6 wt%, Fe between 0.05 and 0.5 wt% and solidification rates of 0.1, 1, 5 and 50 K s −1 . Two intermetallic phases are observed to evolve in these alloys under these solidification conditions: the τ 5 -Al 8 SiFe 2 and τ 6 -Al 9 Fe 2 Si 2 . The τ 5 -Al 8 SiFe 2 phase evolves at all levels of the parameters during solidification and subsequently transforms into the τ 6 -Al 9 Fe 2 Si 2 through a peritectic reaction when promoted by certain combinations of solidification parameters such as higher Fe level, lower Si level and slower solidification rates. Further, it is also hypothesized from experimental evidences that the θ-Al 13 Fe 4 binary phase precludes the evolution of the τ 5 during solidification and subsequently transforms into the τ 6 phase during solidification. These observations are anomalous to the publications as prior art and simulation predictions of thermodynamic phase diagrams of these alloys, wherein, only one intermetallic phases in the

  6. Synthesis and high temperature stability of amorphous Si(B)CN-MWCNT composite nanowires

    Science.gov (United States)

    Bhandavat, Romil; Singh, Gurpreet

    2012-02-01

    We demonstrate synthesis of a hybrid nanowire structure consisting of an amorphous polymer-derived silicon boron-carbonitride (Si-B-C-N) shell with a multiwalled carbon nanotube core. This was achieved through a novel process involving preparation of a boron-modified liquid polymeric precursor through a reaction of trimethyl borate and polyureasilazane under atmospheric conditions; followed by conversion of polymer to glass-ceramic on carbon nanotube surfaces through controlled heating. Chemical structure of the polymer was studied by liquid-NMR while evolution of various ceramic phases was studied by Raman spectroscopy, solid-NMR, Fourier transform infrared and X-ray photoelectron spectroscopy. Electron microscopy and X-ray diffraction confirms presence of amorphous Si(B)CN coating on individual nanotubes for all specimen processed below 1400 degree C. Thermogravimetric analysis, followed by TEM revealed high temperature stability of the carbon nanotube core in flowing air up to 1300 degree C.

  7. Rapid degradation of azo dye Direct Black BN by magnetic MgFe{sub 2}O{sub 4}-SiC under microwave radiation

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Jia; Yang, Shaogui, E-mail: yangsg@nju.edu.cn; Li, Na; Meng, Lingjun; Wang, Fei; He, Huan; Sun, Cheng

    2016-08-30

    Highlights: • MgFe{sub 2}O{sub 4}-SiC was first successfully synthesized. • MgFe{sub 2}O{sub 4}-SiC attained the maximum absorbing value of 13.32 dB at 2.57 GHz, which reached extremely high RL value at low frequency range. • Fast decolorization and high TOC removal of azo dye Direct Black BN with complicated structure could occur with MgFe{sub 2}O{sub 4}-SiC under MW radiation. • MgFe{sub 2}O{sub 4}-SiC had better MW absorbing property and higher MW catalytic activity than MnFe{sub 2}O{sub 4}-SiC under the same condition. • MgFe{sub 2}O{sub 4}-SiC was of practical use in the wastewater treatment. - Abstract: A novel microwave (MW) catalyst, MgFe{sub 2}O{sub 4} loaded on SiC (MgFe{sub 2}O{sub 4}-SiC), was successfully synthesized by sol-gel method, and pure MgFe{sub 2}O{sub 4} was used as reference. The MgFe{sub 2}O{sub 4} and MgFe{sub 2}O{sub 4}-SiC catalysts were characterized by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), N{sub 2} adsorption analyzer (BET specific surface area), X-ray photoelectron spectroscopy (XPS). The electromagnetic parameters of the prepared catalysts were measured by vector network analyzer. The reflection loss (RL) based on the electromagnetic parameters calculated in Matlab showed MgFe{sub 2}O{sub 4}-SiC attained the maximum absorbing value of 13.32 dB at 2.57 GHz, which reached extremely high RL value at low frequency range, revealing the excellent MW absorption property of MgFe{sub 2}O{sub 4}-SiC. MW-induced degradation of Direct Black BN (DB BN) over as-synthesized MgFe{sub 2}O{sub 4}-SiC indicated that degradation efficiency of DB BN (20 mg L{sup −1}) in 5 min reached 96.5%, the corresponding TOC removal was 65%, and the toxicity of DB BN after degradation by MgFe{sub 2}O{sub 4}-SiC obviously decreased. The good stability and applicability of MgFe{sub 2}O{sub 4}-SiC on the degradation process were also discovered. Moreover, the ionic chromatogram during degradation

  8. Magnetostriction-strain-induced enhancement and modulation of photovoltaic performance in Si-p-n/TbxDy1-xFe2 composite

    International Nuclear Information System (INIS)

    Wu, Zheng; Zhang, Yihe; Fang, Cong; Ma, Ke; Lin, He; Jia, Yanmin; Chen, Jianrong; Wang, Yu; Chan, Helen Lai Wa

    2014-01-01

    High photovoltaic efficiency is a key index in the application of silicon (Si) solar cells. In this study, a composite of a photovoltaic Si p-n junction solar cell and a magnetostrictive Tb x Dy 1-x Fe 2 alloy was fabricated. By utilizing the magnetostrictive strain to modulate the energy bandgap of Si, the open-circuit voltage and the maximum photovoltaic output power of the Si p-n junction solar cell could be enhanced by ∝12% and 9.1% under a dc magnetic field of ∝250 mT, respectively. The significantly enhanced photovoltaic performance and the simple fabrication process make the Si-p-n/Tb x Dy 1-x Fe 2 composite a promising material for high-efficiency solar cell devices. The structure of the proposed Si-p-n/Tb x Dy 1-x Fe 2 laminated composite. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Formation of ferromagnetic interface between β-FeSi2 and Si(111) substrate

    International Nuclear Information System (INIS)

    Hattori, Azusa N.; Hattori, Ken; Kodama, Kenji; Hosoito, Nobuyoshi; Daimon, Hiroshi

    2007-01-01

    Epitaxial β-FeSi 2 thin films were grown on Si(111)7x7 clean surfaces by solid phase epitaxy in ultrahigh vacuum: iron deposition at low temperature and subsequent annealing. We found that a ferromagnetic interface layer of iron-rich silicides forms between a β-FeSi 2 surface layer and a Si(111) substrate spontaneously from transmission electron microscopy observations and magnetization measurements

  10. Recoil implantation of boron into silicon by high energy silicon ions

    Science.gov (United States)

    Shao, L.; Lu, X. M.; Wang, X. M.; Rusakova, I.; Mount, G.; Zhang, L. H.; Liu, J. R.; Chu, Wei-Kan

    2001-07-01

    A recoil implantation technique for shallow junction formation was investigated. After e-gun deposition of a B layer onto Si, 10, 50, or 500 keV Si ion beams were used to introduce surface deposited B atoms into Si by knock-on. It has been shown that recoil implantation with high energy incident ions like 500 keV produces a shallower B profile than lower energy implantation such as 10 keV and 50 keV. This is due to the fact that recoil probability at a given angle is a strong function of the energy of the primary projectile. Boron diffusion was showed to be suppressed in high energy recoil implantation and such suppression became more obvious at higher Si doses. It was suggested that vacancy rich region due to defect imbalance plays the role to suppress B diffusion. Sub-100 nm junction can be formed by this technique with the advantage of high throughput of high energy implanters.

  11. Structural and magnetic characterization of Fe2CrSi Heusler alloy nanoparticles as spin injectors and spin based sensors

    Science.gov (United States)

    Saravanan, G.; Asvini, V.; Kalaiezhily, R. K.; Parveen, I. Mubeena; Ravichandran, K.

    2018-05-01

    Half-metallic ferromagnetic [HMF] nanoparticles are of considerable interest in spintronics applications due to their potential use as a highly spin polarized current source. HMF exhibits a semiconductor in one spin band at the Fermi level Ef and at the other spin band they poses strong metallic nature which shows 100 % spin polarization at Ef. Fe based full Heusler alloys are primary interest due to high Curie temperature. Fe2CrSi Heusler alloys are synthesized using metallic powders of Fe, Cr and Si by mechanical alloying method. X-Ray diffractions studies were performed to analyze the structural details of Fe2CrSi nanoparticles with High resolution scanning electron microscope (HRSEM) studies for the morphological details of nanoparticles and magnetic properties were studied using Vibrating sample magnetometer (VSM). XRD Data analysis conforms the Heusler alloy phase showing the existence of L21 structure. Magnetic properties are measured for synthesized samples exhibiting a soft magnetic property possessing low coercivity (HC = 60.5 Oe) and saturation magnetic moment of Fe2CrSi is 3.16 µB, which is significantly higher than the ideal value of 2 µB from the Slater-Pauling rule due to room temperature measurement. The change in magnetic properties are half-metallic nature of Fe2CrSi is due to the shift of the Fermi level with respect to the gap were can be used as spin sensors and spin injectors in magnetic random access memories and other spin dependent devices.

  12. Complex boron redistribution kinetics in strongly doped polycrystalline-silicon/nitrogen-doped-silicon thin bi-layers

    Energy Technology Data Exchange (ETDEWEB)

    Abadli, S. [Department of Electrical Engineering, University Aout 1955, Skikda, 21000 (Algeria); LEMEAMED, Department of Electronics, University Mentouri, Constantine, 25000 (Algeria); Mansour, F. [LEMEAMED, Department of Electronics, University Mentouri, Constantine, 25000 (Algeria); Pereira, E. Bedel [CNRS-LAAS, 7 avenue du colonel Roche, 31077 Toulouse (France)

    2012-10-15

    We have investigated the complex behaviour of boron (B) redistribution process via silicon thin bi-layers interface. It concerns the instantaneous kinetics of B transfer, trapping, clustering and segregation during the thermal B activation annealing. The used silicon bi-layers have been obtained by low pressure chemical vapor deposition (LPCVD) method at 480 C, by using in-situ nitrogen-doped-silicon (NiDoS) layer and strongly B doped polycrystalline-silicon (P{sup +}) layer. To avoid long-range B redistributions, thermal annealing was carried out at relatively low-temperatures (600 C and 700 C) for various times ranging between 30 min and 2 h. To investigate the experimental secondary ion mass spectroscopy (SIMS) doping profiles, a redistribution model well adapted to the particular structure of two thin layers and to the effects of strong-concentrations has been established. The good adjustment of the simulated profiles with the experimental SIMS profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the complex B redistribution profiles-shoulders. The increasing kinetics of the B peak concentration near the bi-layers interface is well reproduced by the established model. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Removal of C and SiC from Si and FeSi during ladle refining and solidification

    Energy Technology Data Exchange (ETDEWEB)

    Klevan, Ole Svein

    1997-12-31

    The utilization of solar energy by means of solar cells requires the Si to be very pure. The purity of Si is important for other applications as well. This thesis mainly studies the total removal of carbon from silicon and ferrosilicon. The decarburization includes removal of SiC particles by stirring and during casting in addition to reduction of dissolved carbon by gas purging. It was found that for three commercial qualities of FeSi75, Refined, Gransil, and Standard lumpy, the refined quality is lowest in carbon, followed by Gransil and Standard. A decarburization model was developed that shows the carbon removal by oxidation of dissolved carbon to be a slow process at atmospheric pressure. Gas stirring experiments have shown that silicon carbide particles are removed by transfer to the ladle wall. The casting method of ferrosilicon has a strong influence on the final total carbon content in the commercial alloy. Shipped refined FeSi contains about 100 ppm total carbon, while the molten alloy contains roughly 200 ppm. The total carbon out of the FeSi-furnace is about 1000 ppm. It is suggested that low values of carbon could be obtained on an industrial scale by injection of silica combined with the use of vacuum. Also, the casting system could be designed to give low carbon in part of the product. 122 refs., 50 figs., 24 tabs.

  14. Effect of boron addition to the hard magnetic bulk Nd60Fe30Al10 amorphous alloy

    International Nuclear Information System (INIS)

    Kong, H.Z.; Li, Y.; Ding, J.

    2000-01-01

    A detailed study of the effect of boron addition to crystallinity, magnetic properties and thermal properties was carried out for alloys Nd 60-x Fe 30 Al 10 B x with x=0, 1, 3 and 5 produced by copper mold chill casting and melt-spinning. The cast rods of alloys Nd 60-x Fe 30 Al 10 B x were largely amorphous. Remanence up to 0.154 T and coercivity up to 355 kA/m were observed, which were higher than those of the bulk amorphous Nd 60 Fe 30 Al 10 rod of the same diameter. A step in hysteresis loop was observed for the hard magnetic cast rod and ribbon melt-spun at a low speed of 5 m/s of the alloys with boron addition. Consistent increase in the amplitude of the step and magnetic field (H) at which the step was observed as the boron content increased. A single magnetic phase with low coercivity was observed for fully amorphous ribbon melt-spun at high speed of 30 m/s. Full crystallization due to heat treatment resulted in transition of hard magnetic amorphous phase of Nd 55 Fe 30 Al 10 B 5 cast rod to paramagnetic crystalline phases. TEM results of the as-cast rods illustrated the existence of numerous minute Nd-crystallites in amorphous matrix

  15. Fermi resonance effects on the vibration modes of hydrogen-passivated boron in silicon

    International Nuclear Information System (INIS)

    Watkins, G.D.; Fowler, W.B.; Deleo, G.G.; Stavola, M.; Kozuch, D.M.; Pearton, S.J.; Lopata, J.

    1990-01-01

    10 B - 11 B isotope shifts have been reported recently for the vibrational frequencies of hydrogen (H) and its isotope deuterium (D) in the H-B complex in silicon. The D- 10 B-D 11 B shift was found to be anomalously large. The authors show that this effect finds a natural explanation in a phenomenon called Fermi resonance, arising from a weak anharmonic coupling between the second harmonic of the transverse B vibration and the longitudinal D vibration. The authors present a simple classical explanation of the effect in terms of a parametric oscillator, or a child pumping a swing. They outline a simple quantum mechanical treatment that provides a satisfactory quantitative explanation of the results. The author's calculations also predict infrared absorption at the boron second harmonic frequencies. These are observed for both 10 B and 11 B with intensities and polarization as predicted, providing direct confirmation of the interpretation. The Pankove Si-H-B model, therefore, remains intact

  16. Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

    International Nuclear Information System (INIS)

    Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang; Yang, Deren; Lu, Yunhao

    2014-01-01

    The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B 2 I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition

  17. Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn; Yang, Deren [State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Lu, Yunhao, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn [International Center for New-Structured Materials and Laboratory of New-Structured Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2014-01-20

    The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B{sub 2}I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition.

  18. Compression of Fe-Si-H alloys

    Science.gov (United States)

    Tagawa, S.; Ohta, K.; Hirose, K.

    2014-12-01

    The light elements in the Earth's core have not been fully identified yet, but hydrogen is now collecting more attention in part because recent planet formation theory suggests that large amount of water should have been brought to the Earth during its formation (giant-impact stage). Nevertheless, the effect of hydrogen on the property of iron alloys is little known so far. The earlier experimental study by Hirao et al. [2004 GRL] examined the compression behavior of dhcp FeHx (x ≈ 1) and found that it becomes much stiffer than pure iron above 50 GPa, where magnetization disappears. Here we examined the solubility of hydrogen into iron-rich Fe-Si alloys and the compression behavior of dhcp Fe-Si-H alloy at room temperature. Fe+6.5wt.%Si or Fe+9wt.%Si foil was loaded into a diamond-anvil cell (DAC), and then liquid hydrogen was introduced at temperatures below 20 K. X-ray diffraction measurements at SPring-8 revealed the formation of a dhcp phase with or without thermal annealing by laser above 8.4 GPa. The concentration of hydrogen in such dhcp lattice was calculated following the formula reported by Fukai [1992]; y = 0.5 and 0.2 for Fe-6.5wt.%Si-H or Fe-9wt.%Si-H alloys, respectively when y is defined as Fe(1-x)SixHy. Unlike Fe-H alloy, hydrogen didn't fully occupy the octahedral sites even under hydrogen-saturated conditions in the case of Fe-Si-H system. Anomaly was observed in obtained pressure-volume curve around 44 Å3 of unit-cell volume for both Fe-6.5wt.%Si-H and Fe-9wt.%Si-H alloys, which may be related to the spin transition in the dhcp phase. They became slightly stiffer at higher pressures, but their compressibility was still similar to that of pure iron.

  19. Improved magnetoimpedance and mechanical properties on nanocrystallization of amorphous Fe{sub 68.5}Si{sub 18.5}Cu{sub 1}Nb{sub 3}B{sub 9} ribbons

    Energy Technology Data Exchange (ETDEWEB)

    Sahoo, Trilochan [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India); Proof and Experimental Establishment, Balasore 756025 (India); Majumdar, B. [Defence Metallurgical Research Laboratory, Hyderabad 500068 (India); Srinivas, V., E-mail: veeturi@iitm.ac.in [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India); Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India); Srinivas, M. [Defence Metallurgical Research Laboratory, Hyderabad 500068 (India); Nath, T.K. [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India); Agarwal, G. [Department of Metallurgical Engineering, Banaras Hindu University, Varanasi 221005 (India)

    2013-10-15

    The effect of heat-treatment temperature on evolution of microstructures, mechanical and soft magnetic properties and magnetoimpedance (MI) effect in rapidly solidified Fe{sub 68.5}Si{sub 18.5}Cu{sub 1}Nb{sub 3}B{sub 9} ribbons, has been investigated. The as-quenched ribbons were subjected to heat-treatment at different temperatures between 400 and 600 °C for 1 h under high vacuum. Detailed structural studies on the ribbons heat-treated at and above 525 °C revealed the presence of nanocrystalline Fe{sub 3}Si phases embedded in a residual amorphous matrix. The ribbon heat-treated at 550 °C temperature exhibits maximum ductility, maximum relative permeability of 4.8×10{sup 4}, minimum coercivity of 0.1 Oe, and maximum MI value of 62%. The enhanced MI effect is believed to be related to the magnetic softening of 550 °C heat-treated ribbons. However, the magnetic properties and MI effect deteriorated in the samples heat-treated above 550 °C due to the coarsening of grain sizes. The soft magnetic behavior of the nanocrystalline ribbons are discussed in the light of random anisotropy model, whereas the MI effect is discussed through standard skin effect in electrodynamics. - Highlights: • Microstructure was tuned by controlled crystallization to obtain superior magnetic properties. • Improved MI in the heat-treated ribbons is attributed to the superior electromagnetic properties. • Correlation between MI and magnetic properties of nc-Fe{sub 68.5}Si{sub 18.5}Cu{sub 1}Nb{sub 3}B{sub 9} is established. • All the observed features are consistent with the proposed random anisotropy model.

  20. Defect and dopant depth profiles in boron-implanted silicon studied with channeling and nuclear reaction analysis

    NARCIS (Netherlands)

    Vos, M.; Boerma, D.O.; Smulders, P.J.M.; Oosterhoff, S.

    1986-01-01

    Single crystals of silicon were implanted at RT with 1 MeV boron ions to a dose of 1 × 1015 ions/cm2. The depth profile of the boron was measured using the 2060-keV resonance of the 11B(α, n)14N nuclear reaction. The distribution of the lattice disorder as a function of depth was determined from

  1. Sponge-like Si-SiO2 nanocomposite—Morphology studies of spinodally decomposed silicon-rich oxide

    Science.gov (United States)

    Friedrich, D.; Schmidt, B.; Heinig, K. H.; Liedke, B.; Mücklich, A.; Hübner, R.; Wolf, D.; Kölling, S.; Mikolajick, T.

    2013-09-01

    Sponge-like Si nanostructures embedded in SiO2 were fabricated by spinodal decomposition of sputter-deposited silicon-rich oxide with a stoichiometry close to that of silicon monoxide. After thermal treatment a mean feature size of about 3 nm was found in the phase-separated structure. The structure of the Si-SiO2 nanocomposite was investigated by energy-filtered transmission electron microscopy (EFTEM), EFTEM tomography, and atom probe tomography, which revealed a percolated Si morphology. It was shown that the percolation of the Si network in 3D can also be proven on the basis of 2D EFTEM images by comparison with 3D kinetic Monte Carlo simulations.

  2. Sponge-like Si-SiO2 nanocomposite—Morphology studies of spinodally decomposed silicon-rich oxide

    International Nuclear Information System (INIS)

    Friedrich, D.; Schmidt, B.; Heinig, K. H.; Liedke, B.; Mücklich, A.; Hübner, R.; Wolf, D.; Kölling, S.; Mikolajick, T.

    2013-01-01

    Sponge-like Si nanostructures embedded in SiO 2 were fabricated by spinodal decomposition of sputter-deposited silicon-rich oxide with a stoichiometry close to that of silicon monoxide. After thermal treatment a mean feature size of about 3 nm was found in the phase-separated structure. The structure of the Si-SiO 2 nanocomposite was investigated by energy-filtered transmission electron microscopy (EFTEM), EFTEM tomography, and atom probe tomography, which revealed a percolated Si morphology. It was shown that the percolation of the Si network in 3D can also be proven on the basis of 2D EFTEM images by comparison with 3D kinetic Monte Carlo simulations

  3. Non-magnetic impurity effect on suppression of Tc and gap evolution in the two-gap superconductor Lu2Fe3Si5

    International Nuclear Information System (INIS)

    Nakajima, Y.; Hidaka, H.; Tamegai, T.

    2013-01-01

    Highlights: ► Non-magnetic impurities suppress T c and the amplitude of gaps in Lu 2 Fe 3 Si 5 . ► Critical scattering rate is higher than that expected in s ± -pairing scenario. ► The evolution of two distinct gaps dose not show merging the amplitude of gaps. -- Abstract: We report the suppression of T c and the evolution of amplitudes of the two gaps with the introduction of non-magnetic impurities in a two-gap superconductor Lu 2 Fe 3 Si 5 . While T c rapidly decreases by a small amount of substitution of Sc for Lu, the suppression of T c is more than ten times slower than that expected from the Abrikosov–Gor’kov equation describing the reduction of T c in a superconductor with sign reversal in the gap function. The evolution of two distinct gaps by the introduction of non-magnetic impurities does not show merging the amplitude of two gaps, which is strikingly different from the typical two-gap superconductor MgB 2

  4. Temperature dependence of the coercive field of gas atomized Fe{sub 73.5}Si{sub 13.5}B{sub 9}Nb{sub 3}Cu{sub 1}

    Energy Technology Data Exchange (ETDEWEB)

    Garcia-Escorial, A., E-mail: age@cenim.csic.es [CENIM-CSIC, Avda, Gregorio del Amo, 8, 28040 Madrid (Spain); Lieblich, M. [CENIM-CSIC, Avda, Gregorio del Amo, 8, 28040 Madrid (Spain); Hernando, A.; Aragon, A.; Marin, P. [Instituto de Magnetismo Aplicado, IMA, P.O. Box 155, 28230 Madrid (Spain)

    2012-09-25

    Highlights: Black-Right-Pointing-Pointer An anomalous thermal dependence of the coercive field of gas atomized Fe{sub 73.5}Si{sub 13.5}B{sub 9}Nb{sub 3}Cu{sub 1} powder particles under 25 {mu}m powder particle, increasing Hc as temperature increases. Black-Right-Pointing-Pointer It is proposed that Cu rich regions at inter-grain boundaries could act as exchange decoupling regions contributing to the thermal increase of coercivity. Black-Right-Pointing-Pointer This anomalous thermal dependence points out that tailoring microstructure and size, by controlling the cooling rate of more adequate multiphase systems, could be a promising procedure to develop soft or hard magnets, avoiding Rare Earths metals that is nowadays an important target for the engineering of magnetic materials. - Abstract: In this work, the dependence of the coercive field of Fe{sub 73.5}Si{sub 13.5}B{sub 9}Nb{sub 3}Cu{sub 1} gas atomized powder with the temperature for different particle sizes has been studied, observing an anomalous behavior in the under 25 powder particle size fraction. This unusual behavior is related with the microstructure of the powder, and is attributed to the presence of a multiphase magnetic system, with non-magnetic regions decoupling the ferromagnetic domains.

  5. Evolution of Fe based intermetallic phases in Al–Si hypoeutectic casting alloys: Influence of the Si and Fe concentrations, and solidification rate

    Energy Technology Data Exchange (ETDEWEB)

    Gorny, Anton; Manickaraj, Jeyakumar [Light Metal Casting Research Centre (LMCRC), Department of Mechanical Engineering, McMaster University, 1280 Main Street W, Hamilton, ON, Canada L8S 4L7 (Canada); Cai, Zhonghou [Advanced Photon Source, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439 (United States); Shankar, Sumanth, E-mail: shankar@mcmaster.ca [Light Metal Casting Research Centre (LMCRC), Department of Mechanical Engineering, McMaster University, 1280 Main Street W, Hamilton, ON, Canada L8S 4L7 (Canada)

    2013-11-15

    Highlights: •Anomalous evolution of Fe based intermetallic phases in Al–Si–Fe alloys. •XRF coupled with nano-diffraction to confirm the nano-size Fe intermetallic phases. •Crystallography of the θ-Al{sub 13}Fe{sub 4}, τ{sub 5}-Al{sub 8}Fe{sub 2}Si and τ{sub 6}-Al{sub 9}Fe{sub 2}Si{sub 2} phases. •Peritectic reactions involving the Fe intermetallic phases in Al–Si–Fe alloys. -- Abstract: Al–Si–Fe hypoeutectic cast alloy system is very complex and reported to produce numerous Fe based intermetallic phases in conjunction with Al and Si. This publication will address the anomalies of phase evolution in the Al–Si–Fe hypoeutectic casting alloy system; the anomaly lies in the peculiarities in the evolution and nature of the intermetallic phases when compared to the thermodynamic phase diagram predictions and past publications of the same. The influence of the following parameters, in various combinations, on the evolution and nature of the intermetallic phases were analyzed and reported: concentration of Si between 2 and 12.6 wt%, Fe between 0.05 and 0.5 wt% and solidification rates of 0.1, 1, 5 and 50 K s{sup −1}. Two intermetallic phases are observed to evolve in these alloys under these solidification conditions: the τ{sub 5}-Al{sub 8}SiFe{sub 2} and τ{sub 6}-Al{sub 9}Fe{sub 2}Si{sub 2}. The τ{sub 5}-Al{sub 8}SiFe{sub 2} phase evolves at all levels of the parameters during solidification and subsequently transforms into the τ{sub 6}-Al{sub 9}Fe{sub 2}Si{sub 2} through a peritectic reaction when promoted by certain combinations of solidification parameters such as higher Fe level, lower Si level and slower solidification rates. Further, it is also hypothesized from experimental evidences that the θ-Al{sub 13}Fe{sub 4} binary phase precludes the evolution of the τ{sub 5} during solidification and subsequently transforms into the τ{sub 6} phase during solidification. These observations are anomalous to the publications as prior art and

  6. Sharp boron spikes in silicon grown at reduced and atmospheric pressure by fast-gas-switching CVD

    NARCIS (Netherlands)

    Vink, A.T.; Roksnoer, P.J.; Maes, J.W.F.M.; Vriezema, C.J.; IJzendoorn, van L.J.; Zalm, P.C.

    1990-01-01

    Boron doping spikes in Si were grown by fast-gas-switching CVD at 800 and 850°C using Si2H6 and B2H6 in 0.03, 0.1 and 1 atm H2 as the carrier gas. The B2H6 doping gas was added for 2 s by two methods, namely during growth or as a flush while the Si2H6 flow was interrupted. High-resolution SIMS

  7. Surface texture of single-crystal silicon oxidized under a thin V{sub 2}O{sub 5} layer

    Energy Technology Data Exchange (ETDEWEB)

    Nikitin, S. E., E-mail: nikitin@mail.ioffe.ru; Verbitskiy, V. N.; Nashchekin, A. V.; Trapeznikova, I. N.; Bobyl, A. V.; Terukova, E. E. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2017-01-15

    The process of surface texturing of single-crystal silicon oxidized under a V{sub 2}O{sub 5} layer is studied. Intense silicon oxidation at the Si–V{sub 2}O{sub 5} interface begins at a temperature of 903 K which is 200 K below than upon silicon thermal oxidation in an oxygen atmosphere. A silicon dioxide layer 30–50 nm thick with SiO{sub 2} inclusions in silicon depth up to 400 nm is formed at the V{sub 2}O{sub 5}–Si interface. The diffusion coefficient of atomic oxygen through the silicon-dioxide layer at 903 K is determined (D ≥ 2 × 10{sup –15} cm{sup 2} s{sup –1}). A model of low-temperature silicon oxidation, based on atomic oxygen diffusion from V{sub 2}O{sub 5} through the SiO{sub 2} layer to silicon, and SiO{sub x} precipitate formation in silicon is proposed. After removing the V{sub 2}O{sub 5} and silicon-dioxide layers, texture is formed on the silicon surface, which intensely scatters light in the wavelength range of 300–550 nm and is important in the texturing of the front and rear surfaces of solar cells.

  8. Structure and magnetic behaviors of melt-spun SmFeSiB ribbons and their nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Y.; Zhang, K., E-mail: zhangkunone@gmail.com; Li, K.S.; Yu, D.B.; Ling, J.J.; Men, K.; Dou, Q.Y.; Yan, W.L.; Xie, J.J.; Yang, Y.F.

    2016-05-01

    SmFe{sub 9.3+x}Si{sub 0.2}B{sub 0.1} (x=0, 0.5, 1.0) ribbons and their nitrides were prepared by melt-spinning, followed by annealing and subsequent nitriding. The structure and magnetic properties have been investigated by means of powder X-ray diffraction, vibrating sample magnetometer and Mossbauer spectroscopy. Rietveld analysis shows that the augment of Fe content gives rise to an increase of the c/a ratio and cell volume. The increasing amount of Fe atoms occupying the 2e sites results in the change of initial structure. It is indicated that the isomer shift of 3g and 6l atom remains quasi-constant while the 2e atom shows a noticeable increase with the increase of iron content, which further conforms the preferential occupation of excessive Fe atoms at this site. Consistent with Tc, the mean hyperfine field 〈B{sub hf}〉 has the highest value of 25.7 T when x=0.5. The hyperfine fields at different Fe sites follow the order H2e>H3g>H6l. The highest curie temperature of 477.68 K and the hyperfine field of 25.7 T in the as-quenched ribbons were obtained when x=0.5. Meanwhile, the highest magnetic properties of H{sub cj}=4.31 kOe, (BH){sub m}=3.5 MGOe in the nitride powders were found. - Highlights: • Rietveld analysis shows that the augment of Fe content gives rise to an increase of the c/a ratio and cell volume. • The isomer shift of 2e atom shows a noticeable increase according to Fe content, which corroborates the preferential occupation of excessive Fe atoms at this site. • The hyperfine fields at various Fe sites follow the order H2e>H3g>H6l, which corresponds closely with the number of iron near neighbor of each site.

  9. Three-peak behavior in giant magnetoimpedance effect in Fe73.5-x Cr x Nb3Cu1Si13.5B9 amorphous ribbons

    International Nuclear Information System (INIS)

    Rosales-Rivera, A.; Valencia, V.H.; Pineda-Gomez, P.

    2007-01-01

    A systematic study of the giant magnetoimpedance (GMI) effect in Fe 73.5- x Cr x Nb 3 Cu 1 Si 13.5 B 9 amorphous ribbons with x=0, 2, 4, 6, 8 and 10 is presented. The complex impedance in these compounds was measured for applied fields from -80 to 80 Oe at room temperature, via the so-called four-probe technique. Depending on the frequency, the experimentally observed GMI curves usually exhibit two types of behavior, namely single-peak (SP), and two-peak (TP). In this work, we emphasize the presence of a 'three-peak behavior' in GMI curves. It occurs between SP and TP behaviors. The mechanisms leading to the three-peak behavior are discussed

  10. Wetting and interface phenomena in the B4C/(Cu-B-Si) system

    International Nuclear Information System (INIS)

    Aizenshtein, M.; Froumin, N.; Shapiro-Tsoref, E.; Dariel, M.P.; Frage, N.

    2005-01-01

    The addition of Si to a Cu-B liquid alloy improves wetting of the boron carbide substrate and allows maintaining a flat metal/ceramic interface. Improved wetting is associated with a shift of the boron content in the near surface layer of the substrate towards a higher B/C ratio. The experimental results are consistent with the thermodynamic analysis of the Cu-B-C-Si system

  11. Viscosity of SiO2-"FeO"-Al2O3 System in Equilibrium with Metallic Fe

    Science.gov (United States)

    Chen, Mao; Raghunath, Sreekanth; Zhao, Baojun

    2013-08-01

    The present study delivered the measurements of viscosities in SiO2-"FeO"-Al2O3 system in equilibrium with metallic Fe. The rotational spindle technique was used in the measurements at the temperature range of 1473 K to 1773 K (1200 °C to 1500 °C). Molybdenum crucibles and spindles were employed in all measurements. The Fe saturation condition was maintained by an iron plate placed at the bottom of the crucible. The equilibrium compositions of the slags were measured by EPMA after the viscosity measurements. The effect of up to 20 mol. pct Al2O3 on the viscosity of the SiO2-"FeO" slag was investigated. The "charge compensation effect" of the Al2O3 and FeO association has been discussed. The modified quasi-chemical viscosity model has been optimized in the SiO2-"FeO"-Al2O3 system in equilibrium with metallic Fe to describe the viscosity measurements of the present study.

  12. Microstructure evolution in the rapidly quenched Fe{sub 78}Si{sub 9}B{sub 13} ribbons

    Energy Technology Data Exchange (ETDEWEB)

    Wang, W.-M., E-mail: weiminw@sdu.edu.c [Key Lab of Liquid Structure and Heredity of Materials, Shandong University, Jinan 250061 (China); Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004 (China); Jin, S.F. [Key Lab of Liquid Structure and Heredity of Materials, Shandong University, Jinan 250061 (China); Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Zhang, J.T.; Huang, T.; Wang, L.; Bian, X.F. [Key Lab of Liquid Structure and Heredity of Materials, Shandong University, Jinan 250061 (China)

    2009-11-01

    We report microstructure evolution in as-spun Fe{sub 78}Si{sub 9}B{sub 13} ribbons under various wheel speeds (s), which was investigated by X-ray diffraction (XRD), differential scanning calorimetry (DSC), and transmission electron microscopy (TEM). With decreasing s, the volume fraction of the residual amorphous phase (V{sub a}) in the as-spun ribbons decreases gradually, and the total exothermic heat of the crystallization in the DSC curves also decreases, but the ratio of the exothermic heat of the second crystallization to the first one is on the contrary. alpha-Fe is found in the ribbon with s of 32.9 m/s, while alpha-Fe, eutectic alpha-Fe+Fe{sub 2}B, and Fe{sub 3}Si phases are found in ribbons with s of 25.6 and 18.3 m/s. The phase precipitating behavior in cooling processes is well consistent with the annealing process in the literatures.

  13. Boron diffusion in strained and strain-relaxed SiGe

    International Nuclear Information System (INIS)

    Wang, C.C.; Sheu, Y.M.; Liu, Sally; Duffy, R.; Heringa, A.; Cowern, N.E.B.; Griffin, P.B.

    2005-01-01

    SiGe has been utilized for aggressive CMOS technologies development recently and there are many references [M. Shima, T. Ueno, T. Kumise, H. Shido, Y. Sakuma, S. Nakamura, Symposium on VLSI Technology Technical Digest, 2002, pp. 94-95; T. Ghani, M. Armstrong, C. Auth, M. Bost, P. Charvat, G. Glass, T. Hoffmann, K. Johnson, C. Kenyon, J. Klaus, B. McIntyre, K. Mistry, A. Murthy, J. Sandford, M. Silberstein, S. Sivakumar, P. Smith, K. Zawadzki, S. Thompson, M. Bohr, International Electron Devices Meeting Technical Digest, December 2003, pp. 978-980; P. Bai, C. Auth, S. Balakrishnan, M. Bost, R. Brain, V. Chikarmane, R. Heussner, M. Hussein, J. Hwang, D. Ingerly, R. James, J. Jeong, C. Kenyon, E. Lee, S. Lee, N. Lindert, M. Liu, Z. Ma, T. Marieb, A. Murthy, R. Nagisetty, S. Natarajan, J. Neirynck, A. Ott, C. Parker, J. Sebastian, R. Shaheed, S. Sivakumar, J. Steigerwald, S. Tyagi, C. Weber, B. Woolery, A. Yeoh, K. Zhang, M. Bohr, International Electron Devices Meeting Technical Digest, December 2004, pp. 657-660] presenting the advantages brought by it. A better understanding regarding the boron diffusion behavior within and in the vicinity of SiGe is necessary to optimize the extension and the source/drain in pMOSFET. In order to achieve the goal, both effects from mechanical strain and Ge doping on boron diffusion have been investigated. However, only a few publications discuss the impacts of both. Furthermore, most researches investigate these two effects under the conditions of low boron concentration [P. Kuo, J.L. Hoyt, J.F. Gibbons, J.E. Turner, D. Lefforge, Appl. Phys. Lett. 66 (January (5)) (1995) 580-582; N.R. Zangenberg, J. Fage-Pedersen, J. Lundsgaard Hansen, A. Nylandsted Larsen, J. Appl. Phys. 94 (September (6)) (2003) 3883-3890] and high thermal budget anneal [P. Kuo, J.L. Hoyt, J.F. Gibbons, J.E. Turner, D. Lefforge, Appl. Phys. Lett. 66 (January (5)) (1995) 580-582; N.R. Zangenberg, J. Fage-Pedersen, J. Lundsgaard Hansen, A. Nylandsted Larsen, J. Appl

  14. Electrical studies of Fe-related defect complexes in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Chi Kwong

    2012-09-15

    Iron (Fe) is an important impurity in solar-grade silicon which contributes substantially in degrading the efficiency of solar cells. The degradation is mainly caused by the Fe atoms situating at an unperturbed tetrahedral interstitial sites (Fei) in the silicon crystal, consequently acting as a recombination center. By altering the position and the neighbouring environment at which the Fe atoms reside, there are opportunities in minimizing or neutralizing the electrical activity of Fe. Furthermore, utilizing the high mobility of Fe, one can increase the performance of a device by accumulating the Fe atoms from critical regions into regions where Fe can be tolerated. These approaches can help in realizing high efficient solar cells based on cheap and highly Fe-contaminated silicon. In this work, we have investigated the interaction between Fe and defects relevant to solar cells, using mainly electrical characterization methods such as capacitance-voltage measurement, deep level transient spectroscopy and admittance spectroscopy. From the study of potential hydrogen passivation of Fe, hydrogen was introduced through wet chemical etching and further driven to a defined region. Using depth profiles, it is found that incorporation of hydrogen stimulates the dissociation of the iron-boron (Fe-B) pair, releasing and resulting in the unwanted Fei. At the same time, no passivation of Fe by hydrogen has been observed. On the investigation of the mechanism of phosphorus gettering of metal impurities, vacancies have been generated through proton-irradiation. The resulting irradiation-induced defects were examined for reactions with Fe after heat treatments. Based on the evolution of defect concentrations by isochronal annealings, it is found that Fe interacts with the divacancy and the vacancy-oxygen complexes, forming deep levels of 0.28 eV and 0.34 eV above the valence band edge (EV), respectively. In the search for substitutional Fe to investigate its electrical activity

  15. Electronic structure and magnetism of new ilmenite compounds for spintronic devices: FeBO{sub 3} (B = Ti, Hf, Zr, Si, Ge, Sn)

    Energy Technology Data Exchange (ETDEWEB)

    Ribeiro, R.A.P. [Department of Chemistry, State University of Ponta Grossa, Av. General Carlos Cavalcanti, 4748, 84030-900 Ponta Grossa, PR (Brazil); Camilo, A. [Department of Physics, State University of Ponta Grossa, Av. General Carlos Cavalcanti, 4748, 84030-900 Ponta Grossa, PR (Brazil); Lazaro, S.R. de, E-mail: srlazaro@uepg.br [Department of Chemistry, State University of Ponta Grossa, Av. General Carlos Cavalcanti, 4748, 84030-900 Ponta Grossa, PR (Brazil)

    2015-11-15

    First-principles calculations were performed in the framework of Density Functional Theory (DFT) within hybrid functional (B3LYP) to study the electronic structure and magnetic properties of new ilmenite FeBO{sub 3} (B=Ti, Hf, Zr, Si, Ge, Sn) materials. In particular, the magnetic exchange interaction between Fe{sup 2+} layers is dependent on the interlayer distance and it can be controlled by ionic radius of B-site cation. Thus, Fe(Ti, Si, Ge)O{sub 3} are antiferromagnetic materials, while Fe(Zr, Hf, Sn)O{sub 3} are ferromagnetic. We also argue that antiferromagnetic materials and FeZrO{sub 3} are convectional semiconductors, whereas FeHfO{sub 3} and FeSnO{sub 3} exhibit intrinsic half-metallic behavior, making them promising candidates for spintronic devices. - Highlights: • We study electronic structure and magnetism of new FeBO{sub 3} (B=Ti, Hf, Zr, Si, Ge, Sn) ilmenite materials. • We found that magnetic ordering of Fe-based ilmenite materials can be controlled by size of B-site cation. • Fe(Ti, Zr, Si, Ge)O{sub 3} are convectional semiconductors. • FeHfO{sub 3} and FeSnO{sub 3} exhibit intrinsic half-metallic behavior with potential application for spintronic devices.

  16. Surface passivation of n-type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks

    NARCIS (Netherlands)

    van de Loo, B.W.H.; Ingenito, A.; Verheijen, M.A.; Isabella, O.; Zeman, M.; Kessels, W.M.M.

    2017-01-01

    Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that charge-carrier recombination at particularly

  17. Wet chemical treatment of boron doped emitters on n-type (1 0 0) c-Si prior to amorphous silicon passivation

    Energy Technology Data Exchange (ETDEWEB)

    Meddeb, H., E-mail: hosny.meddeb@gmail.com [KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Research and Technology Center of Energy, Photovoltaic Department, Borj-Cedria Science and Technology Park, BP 95, 2050 (Tunisia); University of Carthage, Faculty of Sciences of Bizerta (Tunisia); Bearda, T.; Recaman Payo, M.; Abdelwahab, I. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Abdulraheem, Y. [Electrical Engineering Department, College of Engineering & Petroleum, Kuwait University, P.O. Box 5969, 13060 Safat (Kuwait); Ezzaouia, H. [Research and Technology Center of Energy, Photovoltaic Department, Borj-Cedria Science and Technology Park, BP 95, 2050 (Tunisia); Gordon, I.; Szlufcik, J. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Poortmans, J. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Department of Electrical Engineering (ESAT), K.U. Leuven, 3001 Leuven (Belgium); Faculty of Sciences, University of Hasselt, Martelarenlaan 42, 3500 Hasselt (Belgium)

    2015-02-15

    Highlights: • The influence of the cleaning process using different HF-based cleaning on the amorphous silicon passivation of homojunction boron doped emitters is analyzed. • The effect of boron doping level on surface characteristics after wet chemical cleaning: For heavily doped surfaces, the reduction in contact angle was less pronounced, which proves that such surfaces are more resistant to oxide formation and remain hydrophobic for a longer time. In the case of low HF concentration, XPS measurements show higher oxygen concentrations for samples with higher doping level, probably due to the incomplete removal of the native oxide. • Higher effective lifetime is achieved at lower doping for all considered different chemical pre-treatments. • A post-deposition annealing improves the passivation level yielding emitter saturation currents determined by Auger recombination in the order of 70 fA/cm{sup 2} and below. • The dominance of Auger recombination over other type of B-induced defects on lifetime quality in the case of our p+ emitter. - Abstract: The influence of the cleaning process on the amorphous silicon passivation of homojunction emitters is investigated. A significant variation in the passivation quality following different cleaning sequences is not observed, even though differences in cleaning performance are evident. These results point out the effectiveness of our cleaning treatment and provide a hydrogen termination for intrinsic amorphous silicon passivation. A post-deposition treatment improves the passivation level yielding emitter saturation currents determined by Auger recombination in the order of 70 fA/cm{sup 2} and below.

  18. Cluster-assisted nucleation of silicon phase in hypoeutectic Al–Si alloy with further inoculation

    International Nuclear Information System (INIS)

    Zhang, Yong; Zheng, Hongliang; Liu, Yue; Shi, Lei; Xu, Rongfu; Tian, Xuelei

    2014-01-01

    The paper discusses the responses of eutectic silicon and eutectic cells in Al–10Si alloy upon inoculation with an Al–10Si–2Fe master alloy. The further inoculation hardly destroys the modification effect of Sr but significantly refines the eutectic cells in Sr-modified samples, while in unmodified samples, it stimulates the occurrences of polyhedral silicon particles and divorced eutectic. Thermal analysis, scanning electron microscopy, (high-resolution) transmission electron microscopy and scanning and transmission electron microscopy have been used to elucidate the underlying mechanism. A cluster-assisted nucleation mechanism responsible for the enhanced nucleation of silicon phase upon inoculation is proposed. Icosahedral (AlFeSi) clusters are speculated to evolve from the added Al–10Si–2Fe master alloy in Al–10Si melt, around which aggregations of silicon atoms form. Through a series of structural evolutions, these clusters transform into precursors of a silicon crystal. The subsequent formation of silicon particles is achieved by the agglomerations and attachments of these precursors and individual silicon atoms. This hypothesis is further consolidated by the increased characteristic temperatures of eutectic and the anomalous appearance of a high density of nanoscale particles, as well as the abnormal disappearance of Sr-induced twins in further inoculated silicon particles. The increased characteristic temperatures are strong indications of the enhanced nucleation of the silicon phase. The high density of nanoscale particles with an indeterminate crystal structure are the survivors of these precursors. In an Sr-modified and further inoculated sample, the formation of Sr-induced twins is consequently inhibited due to the participation of these precursors during the growth of silicon particles. Furthermore, based on the proposed nucleation mechanism, the dependence of eutectic cell size on Sr level is elucidated in detail

  19. Dehydration of glucose to 5-hydroxymethylfurfural by a core-shell Fe3O4@SiO2-SO3H magnetic nanoparticle catalyst

    Science.gov (United States)

    This paper discusses the potential use of (Fe3O4@SiO2-SO3H) nanoparticle catalyst for the dehydration of glucose into 5-hydroxymethylfurfural (HMF). A magnetically recoverable (Fe3O4@SiO2-SO3H) nanoparticle catalyst was successfully prepared by supporting sulfonic acid groups (SO3H) on the surface o...

  20. Formation of iron disilicide on amorphous silicon

    Science.gov (United States)

    Erlesand, U.; Östling, M.; Bodén, K.

    1991-11-01

    Thin films of iron disilicide, β-FeSi 2 were formed on both amorphous silicon and on crystalline silicon. The β-phase is reported to be semiconducting with a direct band-gap of about 0.85-0.89 eV. This phase is known to form via a nucleation-controlled growth process on crystalline silicon and as a consequence a rather rough silicon/silicide interface is usually formed. In order to improve the interface a bilayer structure of amorphous silicon and iron was sequentially deposited on Czochralski silicon in an e-gun evaporation system. Secondary ion mass spectrometry profiling (SIMS) and scanning electron micrographs revealed an improvement of the interface sharpness. Rutherford backscattering spectrometry (RBS) and X-ray diffractiometry showed β-FeSi 2 formation already at 525°C. It was also observed that the silicide growth was diffusion-controlled, similar to what has been reported for example in the formation of NiSi 2 for the reaction of nickel on amorphous silicon. The kinetics of the FeSi 2 formation in the temperature range 525-625°C was studied by RBS and the activation energy was found to be 1.5 ± 0.1 eV.

  1. The Partial Molar Volume and Compressibility of the FeO Component in Model Basalts (Mixed CaAl2Si2O8-CaMgSi2O6-CaFeSi2O6 Liquids) at 0 GPa: evidence of Fe2+ in 6-fold coordination

    Science.gov (United States)

    Guo, X.; Lange, R. A.; Ai, Y.

    2010-12-01

    FeO is an important component in magmatic liquids and yet its partial molar volume at one bar is not as well known as that for Fe2O3 because of the difficulty of performing double-bob density measurements under reducing conditions. Moreover, there is growing evidence from spectroscopic studies that Fe2+ occurs in 4, 5, and 6-fold coordination in silicate melts, and it is expected that the partial molar volume and compressibility of the FeO component will vary accordingly. We have conducted both density and relaxed sound speed measurements on four liquids in the An-Di-Hd (CaAl2Si2O8-CaMgSi2O6-CaFeSi2O6) system: (1) Di-Hd (50:50), (2) An-Hd (50:50), (3) An-Di-Hd (33:33:33) and (4) Hd (100). Densities were measured between 1573 and 1838 K at one bar with the double-bob Archimedean method using molybdenum bobs and crucibles in a reducing gas (1%CO-99%Ar) environment. The sound speeds were measured under similar conditions with a frequency-sweep acoustic interferometer, and used to calculate isothermal compressibility. All the density data for the three multi-component (model basalt) liquids were combined with density data on SiO2-Al2O3-CaO-MgO-K2O-Na2O liquids (Lange, 1997) in a fit to a linear volume equation; the results lead to a partial molar volume (±1σ) for FeO =11.7 ± 0.3(±1σ) cm3/mol at 1723 K. This value is similar to that for crystalline FeO at 298 K (halite structure; 12.06 cm3/mol), which suggests an average Fe2+ coordination of ~6 in these model basalt compositions. In contrast, the fitted partial molar volume of FeO in pure hedenbergite liquid is 14.6 ± 0.3 at 1723 K, which is consistent with an average Fe2+ coordination of 4.3 derived from EXAFS spectroscopy (Rossano, 2000). Similarly, all the compressibility data for the three multi-component liquids were combined with compressibility data on SiO2-Al2O3-CaO-MgO liquids (Ai and Lange, 2008) in a fit to an ideal mixing model for melt compressibility; the results lead to a partial molar

  2. Drawing the geometry of 3d transition metal-boron pairs in silicon from electron emission channeling experiments

    CERN Document Server

    Silva, Daniel; Wahl, Ulrich; Martins Correia, Joao; Augustyns, Valerie; De Lemos Lima, Tiago Abel; Granadeiro Costa, Angelo Rafael; David Bosne, Eric; Castro Ribeiro Da Silva, Manuel; Esteves De Araujo, Araujo Joao Pedro; Da Costa Pereira, Lino Miguel

    2016-01-01

    Although the formation of transition metal-boron pairs is currently well established in silicon processing, the geometry of these complexes is still not completely understood. We investigated the lattice location of the transition metals manganese, iron, cobalt and nickel in n- and p+-type silicon by means of electron emission channeling. For manganese, iron and cobalt, we observed an increase of sites near the ideal tetrahedral interstitial position by changing the doping from n- to p+-type Si. Such increase was not observed for Ni. We ascribe this increase to the formation of pairs with boron, driven by Coulomb interactions, since the majority of iron, manganese and cobalt is positively charged in p+-type silicon while Ni is neutral. We propose that breathing mode relaxation around the boron ion within the pair causes the observed displacement from the ideal tetrahedral interstitial site. We discuss the application of the emission channeling technique in this system and, in particular, how it provides insi...

  3. Doping effects on structural and magnetic properties of Heusler alloys Fe2Cr1-xCoxSi

    Science.gov (United States)

    Liu, Yifan; Ren, Lizhu; Zheng, Yuhong; He, Shikun; Liu, Yang; Yang, Ping; Yang, Hyunsoo; Teo, Kie Leong

    2018-05-01

    In this work, 30nm Fe2Cr1-xCoxSi (FCCS) magnetic films were deposited on Cr buffered MgO (100) substrates by sputtering. Fe2Cr0.5Co0.5Si exhibits the largest magnetization and optimal ordered L21 cubic structure at in-situ annealing temperature (Tia) of 450°C. The Co composition dependence of crystalline structures, surface morphology, defects, lattice distortions and their correlation with the magnetic properties are analyzed in detail. The Co-doped samples show in-plane M-H loops with magnetic squareness ratio of 1 and increasing anisotropy energy density with Co composition. Appropriate Co doping composition promotes L21 phase but higher Co composition converts L21 to B2 phase. Doping effect and lattice mismatch both are proved to increase the defect density. In addition, distortions of the FCCS lattice are found to be approximately linear with Co composition. The largest lattice distortion (c/a) is 0.969 for Fe2Cr0.25Co0.75Si and the smallest is 0.983 for Fe2CrSi. Our analyses suggest that these tetragonal distortions mainly induced by an elastic stress from Cr buffer account for the large in-plane anisotropy energy. This work paves the way for further tailoring the magnetic and structural properties of quaternary Heusler alloys.

  4. Boron mediation on the growth of Ge quantum dots on Si (1 0 0) by ultra high vacuum chemical vapor deposition system

    International Nuclear Information System (INIS)

    Chen, P.S.; Pei, Z.; Peng, Y.H.; Lee, S.W.; Tsai, M.-J.

    2004-01-01

    Self-assembled Ge quantum dots (QDs) with boron mediation are grown on Si (1 0 0) by an industrial hot wall ultra-high-vacuum chemical vapor deposition (UHV/CVD) system with different growth temperatures and dopant gas flow rates. Diborane (B 2 H 6 ) gas is applied as a surfactant on the Si (1 0 0) prior to the growth of Ge QDs. Small dome and pyramid shaped Ge QDs are observed after boron treatment as compared to the hut shaped Ge cluster without boron pre-treatment at 525 and 550 deg. C. The Ge QDs have a typical base width and height of about 30 and 6 nm, respectively, and the density is about 2.5x10 10 cm -2 for the growth temperature of 525 deg. C. Through weakening the Si-H bond during the epitaxy growth and changing the stress field on the surface of the Si (1 0 0) buffer, boron mediation can modify the growth mode of Ge QDs. When the growth temperature is low (525-550 deg. C), the former factor is dominate, as the growth temperature is raised (600 deg. C), the latter parameter may play an important role on the formation of Ge QDs. Optical transition from Ge QDs is demonstrated from photoluminescence (PL) spectra. Furthermore, multifold Ge/Si layers are also carried out to enhance the PL intensity with first Ge layer treated by B 2 H 6 and avoid the generation of threading dislocations

  5. Coercivity enhancement of NdFeB sintered magnets by low melting point Dy{sub 32.5}Fe{sub 62}Cu{sub 5.5} alloy modification

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Liping; Ma, Tianyu, E-mail: maty@zju.edu.cn; Zhang, Pei; Jin, Jiaying; Yan, Mi, E-mail: mse_yanmi@zju.edu.cn

    2014-04-15

    To improve coercivity without sacrificing other magnetic performance of NdFeB sintered magnets, a low melting point Dy{sub 32.5}Fe{sub 62}Cu{sub 5.5} alloy was introduced as an intergranular additive. Magnetic properties and microstructure of the magnets with different Dy{sub 32.5}Fe{sub 62}Cu{sub 5.5} contents were studied. At the optimum addition of 3 wt%, coercivity H{sub cj} was enhanced from 12.7 to 15.2 kOe, the maximum magnetic energy product (BH){sub max} was simultaneously increased from 46.6 to 47.8 MG Oe, accompanied by a slight reduction in remanence B{sub r}. Further investigation on microstructure and grain boundary composition indicated that the enhanced H{sub cj} and (BH){sub max} could be attributed to the refined and uniform 2:14:1 phase grains, continuous grain boundaries and a (Nd,Dy){sub 2}Fe{sub 14}B hardening shell surrounding the 2:14:1 phase grains. - Highlights: • Low melting-point Dy{sub 32.5}Fe{sub 62}Cu{sub 5.5} alloy was introduced to NdFeB magnets. • The doped magnet exhibits enhanced coercivity and maximum energy product. • (Nd,Dy){sub 2}Fe{sub 14}B shell was expected to form in the surface of Nd{sub 2}Fe{sub 14}B grains. • The continuous grain boundary layer formed between neighboring Nd{sub 2}Fe{sub 14}B grains.

  6. Quantification and isotope ratio measurement of boron in U3Si2 by inductively coupled plasma mass spectrometry

    International Nuclear Information System (INIS)

    Saha, Abhijit; Deb, S.B.; Nagar, B.K.; Saxena, M.K.; Samanta, Papu

    2014-01-01

    An analytical methodology was developed for precise quantification and isotope ratio measurement of boron in U 3 Si 2 matrix by using ICP-MS after matrix separation. The analytical technique was validated by recovery studies employing standard addition method and the accuracy in isotope ratio measurement was improved by correcting the bias factor after analyzing NIST SRM951. The quantification of B in the three U 3 Si 2 samples was found in the range of 2.32-3.90 μg g -1 with a maximum standard deviation of 3%. The 10 B/ 11 B value in the three samples was found to be 0.2455±0.0042, 0.2451±0.0036 and 0.2452±0.0041. (author)

  7. Process-oriented microstructure evolution of V{sub ss}-V{sub 3}Si-V{sub 5}SiB{sub 2}; Prozessabhaengige Mikrostrukturausbildung von V{sub ss}-V{sub 3}Si-V{sub 5}SiB{sub 2}-Werkstoffen

    Energy Technology Data Exchange (ETDEWEB)

    Krueger, Manja; Koeppe-Grabow, Birte [Magdeburg Univ. (Germany)

    2017-05-15

    Vanadium silicide alloys are potentially interesting high temperature materials, since they combine high mechanical strength at temperatures of up to 1 000 C with a low density. In this study, the microstructures of innovative V-Si-B high temperature materials are examined using different analytical methods. The selected V-9Si-13B model alloy was manufactured using a powder metallurgical process route as well as an ingot metallurgical process. The alloys show a vanadium solid solution phase as well as the high-strength silicide phases V{sub 3}Si and V{sub 5}SiB{sub 2}. Especially for the powder metallurgically fabricated alloy, showing finely dispersed phases, the quantification of microstructural constituents is difficult. The phases, however, can be separated from one another via computer tomography.

  8. Formation of β-FeSi 2 thin films by partially ionized vapor deposition

    Science.gov (United States)

    Harada, Noriyuki; Takai, Hiroshi

    2003-05-01

    The partially ionized vapor deposition (PIVD) is proposed as a new method to realize low temperature formation of β-FeSi 2 thin films. In this method, Fe is evaporated by E-gun and a few percents of Fe atoms are ionized. We have investigated influences of the ion content and the accelerating voltage of Fe ions on the structural properties of β-FeSi 2 films deposited on Si substrates. It was confirmed that β-FeSi 2 can be formed on Si(1 0 0) substrate by PIVD even at substrate temperature as low as 350, while FeSi by the conventional vacuum deposition. It was concluded that the influence of Fe ions on preferential orientation of β-FeSi 2 depends strongly on the content and the acceleration energy of ions.

  9. Isothermal annealing of silicon implanted with 50 keV 10B ions

    International Nuclear Information System (INIS)

    Weidner, B.; Zaschke, G.

    1974-01-01

    Isothermal annealing characteristics of silicon implanted with boron were measured and compared with calculated results. Implantation was performed with 50 keV 10 B ions in the dose range of 7.5 x 10 12 cm -2 to 2.0 x 10 15 cm -2 . Annealing temperatures ranged from 700 to 900 0 C. Maximum annealing time was 10 4 minutes. Annealing time strongly increases with increasing dose and decreasing temperature. Assuming that there is only one activation energy the isothermal annealing curves of constant dose and different temperatures were combined to a reduced annealing curve and the reduced isothermal annealing curve calculated. Starting from first order kinetics, considering the doping profile of boron in silicon and assuming a depth-dependent decay constant the experimentally determined annealing curves could be easily described over the total dose and time range

  10. Synthesis, microstructure and magnetic properties of Fe{sub 3}Si{sub 0.7}Al{sub 0.3}@SiO{sub 2} core–shell particles and Fe{sub 3}Si/Al{sub 2}O{sub 3} soft magnetic composite core

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jian, E-mail: snove418562@163.com [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Fan, Xi’an, E-mail: groupfxa@163.com [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Wu, Zhaoyang, E-mail: wustwuzhaoyang@163.com [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Li, Guangqiang [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China)

    2015-11-15

    Fe{sub 3}Si{sub 0.7}Al{sub 0.3}@SiO{sub 2} core–shell particles and Fe{sub 3}Si/Al{sub 2}O{sub 3} soft magnetic composite core have been synthesized via a modified stöber method combined with following high temperature sintering process. Most of conductive Fe{sub 3}Si{sub 0.7}Al{sub 0.3} particles could be uniformly coated by insulating SiO{sub 2} using the modified stöber method. The Fe{sub 3}Si{sub 0.7}Al{sub 0.3}@SiO{sub 2} core–shell particles exhibited good soft magnetic properties with low coercivity and high saturation magnetization. The reaction 4Al+3SiO{sub 2}=2α-Al{sub 2}O{sub 3}+3Si took place during the sintering process. As a result the new Fe{sub 3}Si/Al{sub 2}O{sub 3} composite was formed. The Fe{sub 3}Si/Al{sub 2}O{sub 3} composite core displayed more excellent soft magnetic properties, better frequency stability at high frequencies, much higher electrical resistivity and lower core loss than the pure Fe{sub 3}Si{sub 0.7}Al{sub 0.3} core. The method of introducing insulating layers surrounding magnetic particles provides a promising route to develop new and high compact soft magnetic materials with good magnetic and electric properties. - Graphical abstract: In Fe{sub 3}Si/Al{sub 2}O{sub 3} composite, Fe{sub 3}Si phases are separated by Al{sub 2}O{sub 3} layers and the eddy currents are confined in Fe{sub 3}Si phases, thus increasing resistivity and reducing core loss. - Highlights: • Fe{sub 3}Si{sub 0.7}Al{sub 0.3}@SiO{sub 2} core–shell particles and Fe{sub 3}Si/Al{sub 2}O{sub 3} cores were prepared. • Fe{sub 3}Si{sub 0.7}Al{sub 0.3} particles could be uniformly coated by nano-sized SiO{sub 2} clusters. • Fe{sub 3}Si{sub 0.7}Al{sub 0.3}@SiO{sub 2} particles and Fe{sub 3}Si/Al{sub 2}O{sub 3} cores showed good soft magnetic properties. • Fe{sub 3}Si/Al{sub 2}O{sub 3} had lower core loss and better frequency stability than Fe{sub 3}Si{sub 0.7}Al{sub 0.3} cores.

  11. Synthesis of ZnFe2O4/SiO2 composites derived from a diatomite template.

    Science.gov (United States)

    Liu, Zhaoting; Fan, Tongxiang; Zhou, Han; Zhang, Di; Gong, Xiaolu; Guo, Qixin; Ogawa, Hiroshi

    2007-03-01

    A novel porous ZnFe2O4/SiO2 composite product has been generated with a template-directed assembly method from porous diatomite under different synthesis conditions, such as precursor concentrations (metallic nitrates), calcination temperature and diatomite type. The phase composition and morphology of all the materials were examined by x-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM). The results indicated that an inherited hierarchical porous structure from the diatomite template can be obtained, and the synthesis conditions were found to have clear effects on the formation of the ZnFe2O4/SiO2 composite. The ideal composite of ZnFe2O4/SiO2 can be obtained through optimization of diatomite template type, precursor solution and calcination temperature. Furthermore, the adsorption abilities of two types of diatomites were analyzed in detail using FTIR spectra and nitrogen adsorption measurements etc, which proved that A-diatomite (Shengzhou-diatomite) is better than B-diatomite (Changbai-diatomite) on the aspect of adsorbing Zn and Fe ions, and of forming the ZnFe2O4.

  12. Plastic deformation of FeSi at high pressures: implications for planetary cores

    Science.gov (United States)

    Kupenko, Ilya; Merkel, Sébastien; Achorner, Melissa; Plückthun, Christian; Liermann, Hanns-Peter; Sanchez-Valle, Carmen

    2017-04-01

    The cores of terrestrial planets is mostly comprised of a Fe-Ni alloy, but it should additionally contain some light element(s) in order to explain the observed core density. Silicon has long been considered as a likely candidate because of geochemical and cosmochemical arguments: the Mg/Si and Fe/Si ratios of the Earth does not match those of the chondrites. Since silicon preferentially partition into iron-nickel metal, having 'missing' silicon in the core would solve this problem. Moreover, the evidence of present (e.g. Mercury) or ancient (e.g. Mars) magnetic fields on the terrestrial planets is a good indicator of (at least partially) liquid cores. The estimated temperature profiles of these planets, however, lay below iron melting curve. The addition of light elements in their metal cores could allow reducing their core-alloy melting temperature and, hence, the generation of a magnetic field. Although the effect of light elements on the stability and elasticity of Fe-Ni alloys has been widely investigated, their effect on the plasticity of core materials remains largely unknown. Yet, this information is crucial for understanding how planetary cores deform. Here we investigate the plastic deformation of ɛ-FeSi up to 50 GPa at room temperature employing a technique of radial x-ray diffraction in diamond anvil cells. Stoichiometric FeSi endmember is a good first-order approximation of the Fe-FeSi system and a good starting material to develop new experimental perspectives. In this work, we focused on the low-pressure polymorph of FeSi that would be the stable phase in the cores of small terrestrial planets. We will present the analysis of measured data and discuss their potential application to constrain plastic deformation in planetary cores.

  13. Pr2Fe14B/α-Fe nanocomposites for thermal applications

    International Nuclear Information System (INIS)

    Silva, Suelanny Carvalho da

    2012-01-01

    In this work, Pr x Fe 94 - x B 6 (x = 6, 8, 10 and 12) nanostructured powders were prepared by a combination of hydrogenation, disproportionation, desorption and recombination (HDDR) process with high energy milling applied to the mixture of an as-cast alloy (Pr 14 Fe 80 B 6 ) and α-Fe. The produced nanoparticles showed magnetic properties comparable to those reported in hyperthermia studies. The optimal time to obtain the magnetic nanoparticles is 5 hours (at 900 rpm). It was verified that longer milling times cause an increase in carbon percentage on the particles. The carbon is derived from oleic acid added as a surfactant in the milling step. The nanocomposites exhibit coercive force ranging from 80 Oe (6.5 kAm -1 ) to 170 Oe (13.5 kAm -1 ) and magnetic moments in the range of 81 129 Am2kg -1 . From the X-ray diffraction analyses, only two phases were found in all samples: α-Fe and the magnetic phase Pr 2 Fe 14 B. Individual nanoparticles with diameter of about 20 nm were verified. The samples studied presented heating when exposed to an alternating magnetic field (f = 222 kHz e H max ∼3.7 kAm -1 ) comparable to reported in literature. Temperature variations (ΔT) of the powders were: 51 K for Pr 6 Fe 88 B 6 , 41 K for Pr 8 Fe 86 B 6 , 38 K for Pr 10 Fe 8 4 B 6 and T = 34 K for Pr 12 Fe 82 B 6 . The specific absorption rates (SARs) of the powders were 201 Wkg -1 for Pr 6 Fe 88 B 6 composition, 158 Wkg -1 on the composition Pr 8 Fe 86 B 6 , and 114 Wkg -1 for Pr 10 Fe 84 B 6 and Pr 12 Fe 82 B 6 compositions. (author)

  14. Nano-structure and tribological properties of B+ and Ti+ co-implanted silicon nitride

    International Nuclear Information System (INIS)

    Nakamura, Naoki; Noda, Katsutoshi; Yamauchi, Yukihiko

    2005-01-01

    Silicon nitride ceramics have been co-implanted with boron and titanium ions at a fluence of 2 x 10 17 ions/cm 2 and an energy of 200 keV. TEM results indicated that the boron and titanium-implanted layers were amorphized separately and titanium nitride nano-crystallites were formed in the titanium-implanted layer. XPS results indicated that the implantation profile varied a little depending on the ion implantation sequence of boron and titanium ions, with the boron implantation peak shifting to a shallower position when implanted after Ti + -implantation. Wear tests of these ion-implanted materials were carried out using a block-on-ring wear tester under non-lubricated conditions against commercially available silicon nitride materials. The specific wear rate was reduced by ion implantation and showed that the specific wear rate of Ti + -implanted sample was the lowest, followed by B + , Ti + co-implanted and B + -implanted samples

  15. High-rate and ultralong cycle-life LiFePO4 nanocrystals coated by boron-doped carbon as positive electrode for lithium-ion batteries

    Science.gov (United States)

    Feng, Jinpeng; Wang, Youlan

    2016-12-01

    An evolutionary modification approach, boron-doped carbon coating, has been used to improve the electrochemical performances of positive electrodes for lithium-ion batteries, and demonstrates apparent and significant modification effects. In this study, the boron-doped carbon coating is firstly adopted and used to decorate the performance of LiFePO4. The obtained composite exhibits a unique core-shell structure with an average diameter of 140 nm and a 4 nm thick boron-doped carbon shell that uniformly encapsulates the core. Owing to the boron element which could induce high amount of defects in the carbon, the electronic conductivity of LiFePO4 is greatly ameliorated. Thus, the boron-doped composite shows superior rate capability and cycle stability than the undoped sample. For instance, the reversible specific capacity of LiFePO4@B0.4-C can reach 164.1 mAh g-1 at 0.1C, which is approximately 96.5% of the theoretical capacity (170 mAh g-1). Even at high rate of 10C, it still shows a high specific capacity of 126.8 mAh g-1 and can be maintained at 124.5 mAh g-1 after 100 cycles with capacity retention ratio of about 98.2%. This outstanding Li-storage property enable the present design strategy to open up the possibility of fabricating the LiFePO4@B-C composite for high-performance lithium-ion batteries.

  16. Study of boron distribution in silicon structure by side long section technique

    International Nuclear Information System (INIS)

    Kadirova, M.; Zhumaev, N.; Simakhin, Yu.F.; Usmanova, M.M.

    1997-01-01

    To study deep boron diffusion in the complex silicon structures, consisting of interchange boron doping layers of mono- and polycrystalline silicon, separated by oxide films a technique of side long section by using Solid State Nuclear Track Detector (SSNTD) has been elaborated. The boron distribution technique is based on the detection of alpha-particles from the 10 B(n,α) 7 Li reaction with cellulose nitrate film. The etched α-track registering cellulose nitrite film show the structure image magnified 1/sinφ fold. Boron concentration defined by density of the etched pits appearing on the film surface. An optical microscope analysis of the sample track-mapping image is realised by examination with closely spaced (Δl < Δx/sinφ) and largely spaced (Δl ≥ Δx/sinφ) movements. For analysis of both experimental data the computer application programs have been developed. An universal algorithm for determination of the boron profiles has been created to take into account influence of a deeper layers on a total measurement of track density when Δl < Δx/sinφ. (author)

  17. Crystallization and magnetic properties of a 10Li{sub 2}O–9MnO{sub 2}–16Fe{sub 2}O{sub 3}–25CaO–5P{sub 2}O{sub 5}–35SiO{sub 2} glass

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Moo-Chin, E-mail: mcwang@kmu.edu.tw [Department of Fragrance and Cosmetic Science, Kaohsiung Medical University, 100 Shih-Chuan 1st Road, Kaohsiung 80708, Taiwan (China); Cheng, Huy-Zu [Department of Materials Science and Engineering, I-Shou University, 1 123456789Hsueh-Cheng Road, Section 1, Ta-Hsu, Kaohsiung 84001, Taiwan (China); Lin, Huey-Jiuan [Department of Materials Science and Engineering, National United University, 1 Lien-Da Road, Kung-Ching Li, Miao-Li 36003, Taiwan (China); Wang, Chien-Fu [Department of Materials Science and Engineering, I-Shou University, 1 123456789Hsueh-Cheng Road, Section 1, Ta-Hsu, Kaohsiung 84001, Taiwan (China); Hsi, Chi-Shiung, E-mail: chsi@nuu.edu.tw [Department of Materials Science and Engineering, National United University, 1 Lien-Da Road, Kung-Ching Li, Miao-Li 36003, Taiwan (China)

    2013-06-15

    The crystallization behavior and magnetic properties of 10Li{sub 2}O–9MnO{sub 2}–16Fe{sub 2}O{sub 3}–25CaO–5P{sub 2}O{sub 5}–35SiO{sub 2} (10LFS) glass have been studied using differential thermal analysis (DTA), X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectrometry (EDS), transmission electron microscopy (TEM) and selected area electron diffraction (SAED) to observe the crystallization behavior and a superconducting quantum interference device (SQUID) for measurements of the magnetic properties. The DTA shows that the 10LFS glass has one broad exothermic peak at approximately 674 °C and one sharp (the highest) exothermic peak at 764 °C. When the 10LFS glass crystallized at 850 °C for 4 h, the crystalline phases identified by XRD were lithium silicate (Li{sub 2}SiO{sub 3}), β-wollastonite (β-CaSiO{sub 3}), lithium orthophosphate (Li{sub 3}PO{sub 4}), magnetite (FeFe{sub 2}O{sub 4}) and triphylite (Li(Mn{sub 0.5}Fe{sub 0.5})PO{sub 4}). The SEM surface analysis revealed that the β-wollastonite and lithium silicate have a lath morphology. The TEM microstructure examination showed that the largest FeFe{sub 2}O{sub 3} particles have a size of approximately 0.3 μm. When the 10LFS glass was heat treated at 850 °C for 16 h and a magnetic field of 1000 Oe was applied, a very small remnant magnetic induction of 0.01 emu g{sup −1} and a coercive force of 50 Oe were obtained, which revealed an inverse spinel structure. - Highlights: ► The phases formed at 850 °C in the 10LFS glass-ceramics are LiSiO{sub 3}, β-CaSiO{sub 3}, Li{sub 3}PO{sub 4}, FeFe{sub 2}O{sub 4} and Li(Mn{sub 0.5}Fe{sub 0.5})PO{sub 4}. ► The β-wollastonite and lithium silicate have a lath morphology. ► When 10LFS glass-ceramics applied magnetic field showing the ferromagnetic behavior of an inverse spinel structure.

  18. Reaction of boron carbide with molybdenum disilicide

    International Nuclear Information System (INIS)

    Novikov, A.V.; Melekhin, V.F.; Pegov, V.S.

    1989-01-01

    The investigation results of interaction in the B 4 C-MoSi 2 system during sintering in vacuum are presented. Sintering of boron carbide with molybdenum disilicide is shown to lead to the formation of MoB 2 , SiC, Mo 5 Si 3 compounds, the presence of carbon-containing covering plays an important role in sintering

  19. Effect of Pulse Width on Microstructure and Hardness of FeSiB Coatings by Laser Cladding

    Directory of Open Access Journals (Sweden)

    GONG Yu-bing

    2018-03-01

    Full Text Available High-density coating with FeSiB amorphous ribbons as cladding materials on the surface of mild steel was fabricated by laser cladding. The effect of different pulse widths on formability, microstructure and microhardness of the coatings was analyzed by optical microscope(OM, X-ray diffractometer (XRD, scanning electron microscope (SEM and microhardness tester. The results show that with the increase of the pulse width, the coating dilute rate rises; the tendency of crack increases and the crack originates from surface to the interface; the degree of crystallization increases and crystallization phases are α-Fe, Fe2B and Fe3Si, fusion zone width increases and the trend of columnar crystals along the epitaxial growth becomes bigger and bigger; the microhardness firstly increases and then decreases. When pulse width is 3.2ms, the structure of the coating is compact, no hole defects, the interface exhibits a good metallurgical combination and the dilute rate is low about 23.2%. Average microhardness of the coating reaches 1192HV, which is about 10 times as much as the substrate.

  20. Doping in silicon nanocrystals: An ab initio study of the structural, electronic and optical properties

    International Nuclear Information System (INIS)

    Iori, Federico; Degoli, Elena; Luppi, Eleonora; Magri, Rita; Marri, Ivan; Cantele, G.; Ninno, D.; Trani, F.; Ossicini, Stefano

    2006-01-01

    There are experimental evidences that doping control at the nanoscale can significantly modify the optical properties with respect to the pure systems. This is the case of silicon nanocrystals (Si-nc), for which it has been shown that the photoluminescence (PL) peak can be tuned also below the bulk Si band gap by properly controlling the impurities, for example by boron (B) and phosphorus (P) codoping. In this work, we report on an ab initio study of impurity states in Si-nc. We consider B and P substitutional impurities for Si-nc with a diameter up to 2.2 nm. Formation energies (FEs), electronic, optical and structural properties have been determined as a function of the cluster dimension. For both B-doped and P-doped Si-nc the FE increases on decreasing the dimension, showing that the substitutional doping gets progressively more difficult for the smaller nanocrystals. Moreover, subsurface impurity positions result to be the most stable ones. The codoping reduces the FE strongly favoring this process with respect to the simple n-doping or p-doping. Such an effect can be attributed to charge compensation between the donor and the acceptor atoms. Moreover, smaller structural deformations, with respect to n-doped and p-doped cases, localized only around the impurity sites are observed. The band gap and the optical threshold are largely reduced with respect to the undoped Si-nc showing the possibility of an impurity-based engineering of the Si-nc PL properties

  1. Adhesive and Cohesive Strength in FeB/Fe2B Systems

    Science.gov (United States)

    Meneses-Amador, A.; Blancas-Pérez, D.; Corpus-Mejía, R.; Rodríguez-Castro, G. A.; Martínez-Trinidad, J.; Jiménez-Tinoco, L. F.

    2018-05-01

    In this work, FeB/Fe2B systems were evaluated by the scratch test. The powder-pack boriding process was performed on the surface of AISI M2 steel. The mechanical parameters, such as yield stress and Young's modulus of the boride layer, were obtained by the instrumented indentation technique. Residual stresses produced on the boride layer were estimated by using the x-ray diffraction (XRD) technique. The scratch test was performed in order to evaluate the cohesive/adhesive strength of the FeB/Fe2B coating. In addition, a numerical evaluation of the scratch test on boride layers was performed by the finite element method. Maximum principal stresses were related to the failure mechanisms observed by the experimental scratch test. Shear stresses at the interfaces of the FeB/Fe2B/substrate system were also evaluated. Finally, the results obtained provide essential information about the effect of the layer thickness, the residual stresses, and the resilience modulus on the cohesive/adhesive strength in FeB/Fe2B systems.

  2. Structural and magnetic characterization of Co67Fe4Ni2Si15B12

    International Nuclear Information System (INIS)

    Manjura Hoque, S.; Khan, F.A.; Hakim, M.A.

    2007-01-01

    Soft magnetic properties of Co-based amorphous alloy of the composition Co 67 Fe 4 Ni 2 Si 15 B 12 have been investigated by isothermal heat treatment up to the conventional crystallization temperature. In the as-cast condition the Curie temperature of the sample is 272 deg. C and saturation magnetization is 74 emu/g. Magnetic properties undergo variation depending on the heat treatment temperature. For the heat treatment temperatures of around 420 and 490 deg. C, superior soft magnetic properties are obtained. For both the temperatures initial permeability, μ' reaches value up to ten times the value of permeability in the as-received samples. Annealing effect on giant magneto-impedance has been observed for the current-driving frequencies of 4.5 and 6 MHz. Field dependence of magneto-impedance shows hysteresis at low field, which is related to the changes in the magnetization process of the sample

  3. Magnetism and electronic structure of CoFeCrX (X = Si, Ge) Heusler alloys

    International Nuclear Information System (INIS)

    Jin, Y.; O'Connell, A.; Kharel, P.; Lukashev, P.; Staten, B.; Tutic, I.; Valloppilly, S.; Herran, J.; Mitrakumar, M.; Bhusal, B.; Huh, Y.; Yang, K.; Skomski, R.; Sellmyer, D. J.

    2016-01-01

    The structural, electronic, and magnetic properties of CoFeCrX (X = Si, Ge) Heusler alloys have been investigated. Experimentally, the alloys were synthesized in the cubic L2 1 structure with small disorder. The cubic phase of CoFeCrSi was found to be highly stable against heat treatment, but CoFeCrGe disintegrated into other new compounds when the temperature reached 402 °C (675 K). Although the first-principle calculation predicted the possibility of tetragonal phase in CoFeCrGe, the tetragonal phase could not be stabilized experimentally. Both CoFeCrSi and CoFeCrGe compounds showed ferrimagnetic spin order at room temperature and have Curie temperatures (T C ) significantly above room temperature. The measured T C for CoFeCrSi is 790 K but that of CoFeCrGe could not be measured due to its dissociation into new compounds at 675 K. The saturation magnetizations of CoFeCrSi and CoFeCrGe are 2.82 μ B /f.u. and 2.78 μ B /f.u., respectively, which are close to the theoretically predicted value of 3 μ B /f.u. for their half-metallic phases. The calculated band gaps for CoFeCrSi and CoFeCrGe are, respectively, 1 eV and 0.5 eV. These materials have potential for spintronic device applications, as they exhibit half-metallic electronic structures with large band gaps, and Curie temperatures significantly above room temperature.

  4. The investigation of influence of accelerated electrons on SiO2 used in silicon solar cells

    International Nuclear Information System (INIS)

    Abdullaev, G.B.; Bakirov, M.Ya; Akhmedov, G.M.; Safarov, N.A.; Safarova, F.D.

    1994-01-01

    The process of radiation defects production in enlightened SiO 2 layers coated on silicon solar cells was studied. During irradiation the silicon solar cells with enlightened layers radiation defects are formed both in silicon and SiO 2 thus making worse photo energetic parameters of cells. For investigation of radiation effects formed under irradiation by electrons with 5 MeV energy and cobalt-60 gamma-rays photoluminescence, absorption spectra and electron spin resonance methods were used. It is supposed that main radiation defects in silicon dioxide are E'-centers and oxygen vacancies. (A.D. Avezov). 10 refs.; 2 figs

  5. Viscosity Measurements of "FeO"-SiO2 Slag in Equilibrium with Metallic Fe

    Science.gov (United States)

    Chen, Mao; Raghunath, Sreekanth; Zhao, Baojun

    2013-06-01

    The current study delivered the measurements of viscosities in the system "FeO"-SiO2 in equilibrium with metallic Fe in the composition range between 15 and 40 wt pct SiO2. The experiments were carried out in the temperature range of 1473 K to 1773 K (1200 °C to 1500 °C) using a rotational spindle technique. An analysis of the quenched sample by electron probe X-ray microanalysis (EPMA) after the viscosity measurement enables the composition and microstructure of the slag to be directly linked with the viscosity. The current results are compared with available literature data. The significant discrepancies of the viscosity measurements in this system have been clarified. The possible reasons affecting the accuracy of the viscosity measurement have been discussed. The activation energies derived from the experimental data have a sharp increase at about 33 wt pct SiO2, which corresponds to the composition of fayalite (Fe2SiO4). The modified quasi-chemical model was constructed in the system "FeO"-SiO2 to describe the current viscosity data.

  6. Influence of the substitution of Ni for Fe on the microstructure evolution and magnetic phase transition in La(Fe1−xNix)11.5Si1.5 compounds

    International Nuclear Information System (INIS)

    Sun, Song; Ye, Rongchang; Long, Yi

    2013-01-01

    Graphical abstract: M–T curves show that all the compounds undergo a ferromagnetic–paramagnetic magnetic phase transition process. Besides, the Curie temperature T c of La(Fe 1−x Ni x ) 11.5 Si 1.5 (x = 0, 0.01, 0.02, 0.03) compounds increase monotonously from 195 K to 219 K when Ni content x varies from 0 to 0.03. Highlights: ► We substituted Fe by new element Ni in La(Fe 1−x Ni x ) 11.5 Si 1.5 compounds. ► The microstructure evolution, magnetic phase transition and Curie temperature of La(Fe 1−x Ni x ) 11.5 Si 1.5 compounds were investigated. ► The small substitution of Ni for Fe in La(Fe 1−x Ni x ) 11.5 Si 1.5 compounds enhances the formation of 1:13 phase and helps the elimination of impurity phase significantly. ► The Curie temperature T C of La(Fe 1−x Ni x ) 11.5 Si 1.5 compounds increase monotonously from 195 K to 219 K when x varies from 0 to 0.03. - Abstract: The influence of Ni substitution on the microstructure evolution and magnetic phase transition has been investigated in La(Fe 1−x Ni x ) 11.5 Si 1.5 (x = 0, 0.01, 0.02, 0.03) compounds. Results show that partial substitution of Ni for Fe in La(Fe 1−x Ni x ) 11.5 Si 1.5 (x = 0, 0.01, 0.02, 0.03) alloys promotes fining of the as-cast microstructure. Besides, the formation of 1:13 phase and the elimination of impurity phases is facilitated significantly when annealed at 1373 K for 5 days. Large amounts of inhomogeneities are present in the annealed LaFe 11.5 Si 1.5 alloy. While almost single 1:13 phase is obtained in La(Fe 1−x Ni x ) 11.5 Si 1.5 (x = 0.02, 0.03) alloys. Moreover, the Curie temperature T C of La(Fe 1−x Ni x ) 11.5 Si 1.5 (x = 0, 0.01, 0.02, 0.03) compounds increase monotonously from 195 K to 219 K when Ni content x varies from 0 to 0.03.

  7. Effect of P addition on glass forming ability and soft magnetic properties of melt-spun FeSiBCuC alloy ribbons

    International Nuclear Information System (INIS)

    Xu, J.; Yang, Y.Z.; Li, W.; Chen, X.C.; Xie, Z.W.

    2016-01-01

    The dependency of phosphorous content on the glass forming ability, thermal stability and soft magnetic properties of Fe 83.4 Si 2 B 14−x P x Cu 0.5 C 0.1 (x=0,1,2,3,4) alloys was investigated. The experimental results showed that the substitution of B by P increased the glass forming ability in this alloy system. The Fe 83.4 Si 2 B 10 P 4 Cu 0.5 C 0.1 alloy shows a fully amorphous character. Thermal stability of melt-spun ribbons increases and temperature interval between the first and second crystallization peaks enlarges with the increase of P content. And the saturation magnetic flux density (Bs) shows a slight increase with the increase of P content. The Fe 83.4 Si 2 B 11 P 3 Cu 0.5 C 0.1 nanocrystalline alloy exhibits a high Bs about 200.6 emu/g. The Bs of fully amorphous alloy Fe 83.4 Si 2 B 10 P 4 Cu 0.5 C 0.1 drops dramatically to 172.1 emu/g, which is lower than that of other nanocrystallines. Low material cost and excellent soft magnetic properties make the FeSiBPCuC alloys promise soft magnetic materials for industrial applications. - Highlights: • Partial substituting B by P helps to improve the glass forming ability of the alloy. • The addition of P content reduces the thermal stability and improves heat treatment temperature region for these alloys. • The Fe 83.4 Si 2 B 11 P 3 Cu 0.5 C 0.1 nanocrystalline alloy exhibits a high saturation magnetic density of 200.6 emu/g.

  8. Studies of structural and magnetic properties of glass-coated nanocrystalline Fe79Hf7B12Si2 microwires

    International Nuclear Information System (INIS)

    Garcia, C.; Zhukov, A.; Gonzalez, J.; Zhukova, V.; Varga, R.; Val, J.J. del; Larin, V.; Blanco, J.M.

    2006-01-01

    In the present work we deal with the fabrication of thin of Fe 79 Hf 7 B 12 Si 2 (low Si content) glass-coated microwire with a nanocrystalline structure and structural and coercivity characterization of such samples which can be considered as a new family of these nanocrystalline materials. Pieces of 10 cm of this microwire were annealed (300-600 deg. C during 1 h). The structural characteristics of the as-cast and annealed samples were determined, at room temperature, by X-ray diffraction (XRD) technique. XRD measurements allow to obtain the evolution of the grain size (15-35 nm) and relative volume fraction (5-60%) of the nanograins as a function of he annealing temperature in the annealed samples. Coercive field (H c ) of the as-cast and annealed samples has been evaluated from the hysteresis loop of the samples obtained by a conventional induction method at 100 Hz. Thermal dependence H c is quite similar to that reported in other nanocrystalline Fe-based alloys. It slightly decreases from the as-cast state (relaxation process) showing small maximum at around 700 K (pre-nucleation of nanograins) decreasing significantly between 773-873 K (exchange coupling of the nanograins)

  9. Development of FeNiMoB thin film materials for microfabricated magnetoelastic sensors

    KAUST Repository

    Liang, Cai; Gooneratne, Chinthaka; Cha, Dong Kyu; Chen, Long; Gianchandani, Yogesh; Kosel, Jü rgen

    2012-01-01

    MetglasTM 2826MB foils of 25–30 μm thickness with the composition of Fe40Ni38Mo4B18 have been used for magnetoelastic sensors in various applications over many years. This work is directed at the investigation of ∼3 μm thick iron-nickel-molybdenum-boron (FeNiMoB) thin films that are intended for integrated microsystems. The films are deposited on Si substrate by co-sputtering of iron-nickel (FeNi), molybdenum(Mo), and boron (B) targets. The results show that dopants of Mo and B can significantly change the microstructure and magnetic properties of FeNi materials. When FeNi is doped with only Mo its crystal structure changes from polycrystalline to amorphous with the increase of dopant concentration; the transition point is found at about 10 at. % of Mo content. A significant change in anisotropic magneticproperties of FeNi is also observed as the Modopant level increases. The coercivity of FeNi filmsdoped with Mo decreases to a value less than one third of the value without dopant.Doping the FeNi with B together with Mo considerably decreases the value of coercivity and the out-of-plane magnetic anisotropyproperties, and it also greatly changes the microstructure of the material. In addition, doping B to FeNiMo remarkably reduces the remanence of the material. The filmmaterial that is fabricated using an optimized process is magnetically as soft as amorphous MetglasTM 2826MB with a coercivity of less than 40 Am−1. The findings of this study provide us a better understanding of the effects of the compositions and microstructure of FeNiMoB thin filmmaterials on their magnetic properties.

  10. Development of FeNiMoB thin film materials for microfabricated magnetoelastic sensors

    KAUST Repository

    Liang, Cai

    2012-12-07

    MetglasTM 2826MB foils of 25–30 μm thickness with the composition of Fe40Ni38Mo4B18 have been used for magnetoelastic sensors in various applications over many years. This work is directed at the investigation of ∼3 μm thick iron-nickel-molybdenum-boron (FeNiMoB) thin films that are intended for integrated microsystems. The films are deposited on Si substrate by co-sputtering of iron-nickel (FeNi), molybdenum(Mo), and boron (B) targets. The results show that dopants of Mo and B can significantly change the microstructure and magnetic properties of FeNi materials. When FeNi is doped with only Mo its crystal structure changes from polycrystalline to amorphous with the increase of dopant concentration; the transition point is found at about 10 at. % of Mo content. A significant change in anisotropic magneticproperties of FeNi is also observed as the Modopant level increases. The coercivity of FeNi filmsdoped with Mo decreases to a value less than one third of the value without dopant.Doping the FeNi with B together with Mo considerably decreases the value of coercivity and the out-of-plane magnetic anisotropyproperties, and it also greatly changes the microstructure of the material. In addition, doping B to FeNiMo remarkably reduces the remanence of the material. The filmmaterial that is fabricated using an optimized process is magnetically as soft as amorphous MetglasTM 2826MB with a coercivity of less than 40 Am−1. The findings of this study provide us a better understanding of the effects of the compositions and microstructure of FeNiMoB thin filmmaterials on their magnetic properties.

  11. Effect of 120 MeV 28Si9+ ion irradiation on structural and magnetic properties of NiFe2O4 and Ni0.5Zn0.5Fe2O4

    Science.gov (United States)

    Sharma, R.; Raghuvanshi, S.; Satalkar, M.; Kane, S. N.; Tatarchuk, T. R.; Mazaleyrat, F.

    2018-05-01

    NiFe2O4, Ni0.5Zn0.5Fe2O4 samples were synthesized using sol-gel auto combustion method, and irradiated by using 120 MeV 28Si9+ ion with ion fluence of 1×1012 ions/cm2. Characterization of pristine, irradiated samples were done using X-Ray Diffraction (XRD), Field Emission Scanning Microscopy (FE-SEM), Energy Dispersive X-ray Analysis (EDAX) and Vibrating Sample Magnetometer (VSM). XRD validates the single phase nature of pristine, irradiated Ni- Zn nano ferrite except for Ni ferrite (pristine, irradiated) where secondary phases of α-Fe2O3 and Ni is observed. FE- SEM images of pristine Ni, Ni-Zn ferrite show inhomogeneous nano-range particle size distribution. Presence of diamagnetic ion (Zn2+) in NiFe2O4 increases oxygen positional parameter (u 4¯3m ), experimental, theoretical saturation magnetization (Msexp., Msth.), while decreases the grain size (Ds) and coercivity (Hc). With irradiation Msexp., Msth. increases but not much change are observed in Hc. New antistructure modeling for the pristine, irradiated Ni and Ni-Zn ferrite samples was used for describing the surface active centers.

  12. Study of temperature-dependent charge conduction in silicon-nanocrystal/SiO_2 multilayers

    International Nuclear Information System (INIS)

    Mavilla, Narasimha Rao; Chavan, Vinayak; Solanki, Chetan Singh; Vasi, Juzer

    2016-01-01

    Silicon-nanocrystals (Si-NCs) realized by SiO_x _ 8 MV/cm; independent of temperature), while for lower electric fields (5–8 MV/cm) at higher temperatures, the trap-related Generalized Poole–Frenkel (GPF) is dominant. This signified the role of traps in modifying the conduction in bulk ICPCVD SiO_2 films. We then present the conduction in ML samples. For multilayer samples with SiO_2 sublayer thickness of 1.5 nm and 2.5 nm, Direct Tunneling (DT) is observed to be dominant, while for SiO_2 sublayer thickness of 3.5 nm, Space Charge Limited Conduction (SCLC) with exponential trap distribution is found to be the dominant conduction mechanism. This signifies the role of traps in modifying the conduction in Si-NC multilayer samples and SiO_2 sublayer thickness dependence. - Highlights: • Electrical conduction in SiO_2 film & Si-nanocrystal layers (Si-NCs) is reported. • SiO_2/SiO_x multilayer based Si-NCs were realized by Inductively Coupled plasma CVD. • For SiO_2 film, Fowler–Nordheim tunneling & Generalized Poole–Frenkel are observed. • For Si-NCs with thin SiO_2 sublayers (< 2.5 nm) Direct Tunneling is dominant. • For Si-NCs with 3.5 nm SiO_2 sublayers Space Charge Limited Conduction is dominant.

  13. Effect of V2O5 on SrO-ZnO-B2O3-SiO2 glass-ceramics for high temperature sealant application

    Science.gov (United States)

    Tiwari, Babita; Bhatacharya, S.; Dixit, A.; Gadkari, S. C.; Kothiyal, G. P.

    2012-06-01

    Glasses in the SrO-ZnO-B2O3-SiO2 (SZBS) system with and without V2O5 were prepared by melt-quench method and transformed into glass-ceramics by controlled crystallization. Investigated glasses and glass-ceramics have thermal expansion coefficients (TEC) in the range of 95-120 × 10-7/°C (30-600 °C), which match closely with TEC of other components of solid oxide fuel cell (SOFC). Study of thermo-physical properties of SZBS glasses revealed the network modifying effect of V2O5. Addition of V2O5 increases the TEC and decreases the viscosity of the glass which is beneficial for making seal with Crofer-22-APU. Microstructural investigations have shown good bonding of SZBS glasses with Crofer-22-APU. Elemental line scans indicate that inter-diffusion of Fe, Cr and Si across interface, which is thought to be responsible for good bonding with Crofer-22-APU.

  14. Refinement of Crystalline Boron and the Superconducting Properties of MgB2 by Attrition Ball Milling

    International Nuclear Information System (INIS)

    Lee, J. H.; Shin, S. Y.; Park, H. W.; Jun, B. H.; Kim, C. J.

    2008-01-01

    We report refinement of crystalline boron by an attrition ball milling system and the superconducting properties of the MgB 2 pellets prepared from the refined boron. In this work, we have conducted the ball milling with only crystalline boron powder, in order to improve homogeneity and control the grain size of the MgB 2 that is formed from it. We observed that the crystalline responses in the ball-milled boron became broader and weaker when the ball-milling time was further increased. On the other hand, the B 2 O 3 peak became stronger in the powders, resulting in an increase in the amount of MgO within the MgB 2 volume. The main reason for this is a greater oxygen uptake. From the perspective of the superconducting properties, however, the sample prepared from boron that was ball milled for 5 hours showed an improvement of critical current density (J c ), even with increased MgO phase, under an external magnetic field at 5 and 20 K.

  15. Synthesis, single-crystal structure refinement and Fe/T site preference in the ternary borides Fe {sub x}T{sub 7-x}B{sub 3} (T = Ru, Rh; 0 < x {<=} 1.5)

    Energy Technology Data Exchange (ETDEWEB)

    Fokwa, Boniface P.T. [Institut fuer Anorganische Chemie, Rheinisch-Westfaelische Technische Hochschule Aachen, D-52056 Aachen (Germany); Dronskowski, Richard [Institut fuer Anorganische Chemie, Rheinisch-Westfaelische Technische Hochschule Aachen, D-52056 Aachen (Germany)]. E-mail: drons@HAL9000.ac.rwth-aachen.de

    2007-01-31

    Single crystals of the borides Fe {sub x}Rh{sub 7-x}B{sub 3} (1 < x < 1.5) and Fe {sub x}Ru{sub 7-x}B{sub 3} (0 < x < 1) have been synthesized by arc-melting the elements in a water-cooled copper crucible under argon atmosphere. The silver-like products, structurally characterized by single-crystal X-ray analysis, adopt the hexagonal Th{sub 7}Fe{sub 3} structure type (space group P6{sub 3} mc, no. 186) with Z = 2. Their structures consist of layers of boron-centered trigonal prisms of rhodium or ruthenium (Rh;Ru) and iron on the one side, and one-dimensional channels of face-sharing octahedral (Rh;Ru){sub 6} clusters on the other. Unlike in FeRh{sub 6}B{sub 3}, the iron substitution takes place at two (6c and 2b) of the three available rhodium/ruthenium positions, with a preference for the 6c site in the case of the Fe {sub x}Rh{sub 7-x}B{sub 3} compounds but not for Fe {sub x}Ru{sub 7-x}B{sub 3}.

  16. Synthesis and crystal structure of Mg2B24C, a new boron-rich boride related to 'tetragonal boron I'

    International Nuclear Information System (INIS)

    Adasch, Volker; Hess, Kai-Uwe; Ludwig, Thilo; Vojteer, Natascha; Hillebrecht, Harald

    2006-01-01

    Single crystals of Mg 2 B 24 C, a new boron-rich boridecarbide of magnesium, were synthesized as black needles and columns by reaction of the elements in Ta ampoules and BN crucibles at 1300 deg. C. The crystal structure was determined by X-ray diffraction (P-4n2, a=8.9391(13)A, c=5.0745(10)A, Z=2, 713 reflections, 64 variables, R 1 (F)=0.0235, wR 2 (I)=0.0591). It is closely related to 'tetragonal boron I' and can be described as a tetragonal rod packing of corner-linked B 12 icosahedra with C and Mg atoms in the voids. Each B 12 icosahedron has 2 B-C bonds and 10 exohedral bonds to other icosahedra, 2 within the rod and 4x2 to neighbouring rods. The isolated C atoms are 4-fold coordinated forming distorted tetrahedra. Mg is placed on two crystallographically independent positions within the three-dimensional B 12 C network. Mg 2 B 24 C is the first example for a compound related to 'tetragonal boron I' with a stoichiometric composition

  17. Thermal Stability of Hi-Nicalon SiC Fiber in Nitrogen and Silicon Environments

    Science.gov (United States)

    Bhatt, R. T.; Garg, A.

    1995-01-01

    The room temperature tensile strength of uncoated and two types of pyrolytic boron nitride coated (PBN and Si-rich PBN) Hi-Nicalon SiC fibers was determined after 1 to 400 hr heat treatments to 1800 C under N2 pressures of 0.1, 2, and 4 MPa, and under 0.1 Mpa argon and vacuum environments. In addition, strength stability of both uncoated and coated fibers embedded in silicon powder and exposed to 0.1 MPa N2 for 24 hrs at temperatures to 1400 C was investigated. The uncoated and both types of BN coated fibers exposed to N2 for 1 hr showed noticeable strength degradation above 1400 C and 1600 C, respectively. The strength degradation appeared independent of nitrogen pressure, time of heat treatment, and surface coatings. TEM microstructural analysis suggests that flaws created due to SiC grain growth are responsible for the strength degradation. In contact with silicon powder, the uncoated and both types of PBN coated fibers degrade rapidly above 1350 C.

  18. Role of aluminum in silver paste contact to boron-doped silicon emitters

    Directory of Open Access Journals (Sweden)

    Wei Wu

    2017-01-01

    Full Text Available The addition of aluminum to silver metallization pastes has been found to lower the contact resistivity of a silver metallization on boron-doped silicon emitters for n-type Si solar cells. However, the addition of Al also induces more surface recombination and increases the Ag pattern′s line resistivity, both of which ultimately limit the cell efficiency. There is a need to develop a fundamental understanding of the role that Al plays in reducing the contact resistivity and to explore alternative additives. A fritless silver paste is used to allow direct analysis of the impact of Al on the Ag-Si interfacial microstructure and isolate the influence of Al on the electrical contact from the complicated Ag-Si interfacial glass layer. Electrical analysis shows that in a simplified system, Al decreases the contact resistivity by about three orders of magnitude. Detailed microstructural studies show that in the presence of Al, microscale metallic spikes of Al-Ag alloy and nanoscale metallic spikes of Ag-Si alloy penetrate the surface of the boron-doped Si emitters. These results demonstrate the role of Al in reducing the contact resistivity through the formation of micro- and nano-scale metallic spikes, allowing the direct contact to the emitters.

  19. Plasma Synthesized Doped Boron Nanopowder for MgB2 Superconductors

    International Nuclear Information System (INIS)

    Marzik, James V.

    2012-01-01

    Under this program, a process to synthesize nano-sized doped boron powder by a plasma synthesis process was developed and scaled up from 20 gram batches at program start to over 200 grams by program end. Over 75 batches of boron nanopowder were made by RF plasma synthesis. Particle sizes were typically in the 20-200 nm range. The powder was synthesized by the reductive pyrolysis of BCl 3 in hydrogen in an RF plasma. A wide range of process parameters were investigated including plasma power, torch geometry, gas flow rates, and process pressure. The powder-in-tube technique was used to make monofilament and multifilament superconducting wires. MgB 2 wire made with Specialty Materials plasma synthesized boron nanopowder exhibited superconducting properties that significantly exceeded the program goals. Superconducting critical currents, J c , in excess of 10 5 A cm -2 at magnetic fields of 8 tesla were reproducibly achieved. The upper critical magnetic field in wires fabricated with program boron powder were H c2 (0) = 37 tesla, demonstrating the potential of these materials for high field magnet applications. T c in carbon-doped MgB 2 powder showed a systematic decrease with increasing carbon precursor gas flows, indicating the plasma synthesis process can give precise control over dopant concentrations. Synthesis rates increased by a factor of 400% over the course of the program, demonstrating the scalability of the powder synthesis process. The plasma synthesis equipment at Specialty Materials has successfully and reproducibly made high quality boron nanopowder for MgB 2 superconductors. Research and development from this program enabled Specialty Materials to successfully scale up the powder synthesis process by a factor of ten and to double the size of its powder pilot plant. Thus far the program has been a technical success. It is anticipated that continued systematic development of plasma processing parameters, dopant chemistry and concentration, wire

  20. STUDY OF COATINGS OBTAINED FROM ALLOY Fe-Mn-C-B-Si-Ni-Cr

    Directory of Open Access Journals (Sweden)

    Mychajło Paszeczko

    2016-09-01

    Full Text Available Tribological behaviour of coatings obtained from eutectic alloy Fe-Mn-C-B-Si-Ni-Cr was studied. The coatings were obtained by the method of gas metal arc welding (GMA with use of powder wire. GMA welding method is widely used for the regeneration of machine parts. Eutectic Fe-Mn-C-B-Si-Ni-Cr alloys can be used to obtain high quality coatings resistant to wear and corrosion. Pin-on-disk dry sliding wear tests at sliding speeds 0.4 m/s and under load 10 MPa were conducted for pin specimens. During friction a typical tribological behavior was observed. The mechanism of wear was mechanical-chemical.

  1. Phase equilibria in the Zr-Si-B ternary system (Zr-Si-ZrB{sub 2} region) at 1 173 K

    Energy Technology Data Exchange (ETDEWEB)

    Han, Feng; Luo, Hao [Guangxi Univ., Nanning (China). College of Materials Science and Engineering; Guangxi Univ., Nanning (China). Guangxi Key Lab. of Processing for Non-ferrous Metal and Featured Materials; Zhan, Yongzhong [Guangxi Univ., Nanning (China). College of Materials Science and Engineering; Guangxi Univ., Nanning (China). Guangxi Key Lab. of Processing for Non-ferrous Metal and Featured Materials; Guangxi Univ., Nanning (China). Center of Ecological Collaborative Innovation for Aluminum Industry

    2017-10-15

    The isothermal section of the Zr-Si-B ternary system (Zr-Si-ZrB{sub 2} region) at 1 173 K has been experimentally determined. All equilibrated alloys were characterized via X-ray powder diffraction and scanning electron microscopy equipped with energy-dispersive X-ray analysis. A ternary phase Zr{sub 5}(Si{sub 0.86}B{sub 0.14}){sub 3} was found at 1 173 K. The experimental results show that the isothermal section consists of 11 single-phase regions, 26 two-phase regions and 13 three-phase regions. The existence of eight compounds, i.e. ZrSi{sub 2}, ZrSi, Zr{sub 5}Si{sub 4}, Zr{sub 3}Si{sub 2}, Zr{sub 2}Si, ZrB, ZrB{sub 2} and Zr{sub 5}(Si{sub 0.86}B{sub 0.14}){sub 3} in this system has been confirmed in the Zr-Si-ZrB{sub 2} region at 1 173 K.

  2. A buffer-layer/a-SiO{sub x}:H(p) window-layer optimization for thin film amorphous silicon based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Park, Jinjoo; Dao, Vinh Ai [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Shin, Chonghoon [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Hyeongsik [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Minbum; Jung, Junhee [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Doyoung [School of Electricity and Electronics, Ulsan College West Campus, Ulsan 680-749 (Korea, Republic of); Yi, Junsin, E-mail: yi@yurim.skku.ac.kr [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2013-11-01

    Amorphous silicon based (a-Si:H-based) solar cells with a buffer-layer/boron doped hydrogenated amorphous silicon oxide (a-SiO{sub x}:H(p)) window-layer were fabricated and investigated. In the first part, in order to reduce the Schottky barrier height at the fluorine doped tin oxide (FTO)/a-SiO{sub x}:H(p) window-layer heterointerface, we have used buffer-layer/a-SiO{sub x}:H(p) for the window-layer, in which boron doped hydrogenated amorphous silicon (a-Si:H(p)) or boron doped microcrystalline silicon (μc-Si:H(p)) is introduced as a buffer layer between the a-SiO{sub x}:H(p) and FTO of the a-Si:H-based solar cells. The a-Si:H-based solar cell using a μc-Si:H(p) buffer-layer shows the highest efficiency compared to the optimized bufferless, and a-Si:H(p) buffer-layer in the a-Si:H-based solar cells. This highest performance was attributed not only to the lower absorption of the μc-Si:H(p) buffer-layer but also to the lower Schottky barrier height at the FTO/window-layer interface. Then, we present the dependence of the built-in potential (V{sub bi}) and blue response of the devices on the inversion of activation energy (ξ) of the a-SiO{sub x}:H(p), in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. The enhancement of both V{sub bi} and blue response is observed, by increasing the value of ξ. The improvement of V{sub bi} and blue response can be ascribed to the enlargement of the optical gap of a-SiO{sub x}:H(p) films in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. Finally, the conversion efficiency was increased by 22.0%, by employing μc-Si:H(p) as a buffer-layer and raising the ξ of the a-SiO{sub x}:H(p), compared to the optimized bufferless case, with a 10 nm-thick a-SiO{sub x}:H(p) window-layer. - Highlights: • Low Schottky barrier height benefits fill factor, and open-circuit voltage (V{sub oc}). • High band gap is beneficial for short-circuit current density (J{sub sc}). • Boron doped microcrystalline silicon is a suitable buffer-layer for

  3. Tunnel magnetoresistance of an as-deposited Co2FeAl0.5Si0.5-based magnetic tunnel junction on a Ta/Ru buffer layer

    International Nuclear Information System (INIS)

    Hwang, Jae Youn; Lee, Gae Hun; Song, Yun Heub; Yim, Hae In

    2010-01-01

    A magnetic tunnel junction (MTJ) with a Co 2 FeAl 0.5 Si 0.5 (CFAS) heusler film on a conductive Ta/Ru buffer layer was fabricated for the first time. In the as-deposited state, a highly B2-ordered CFAS film was obtained by using the Ta/Ru buffer layer. The Ta (110) buffer layer causes a Ru (002) buffer layer, which leads to the growth of CFAS with a B2 structure and a completely flat CFAS film. After 600 .deg. C annealing, strain relaxation occurred in the Ta/Ru interface, and the surface roughness decreased; however, the B2-ordered CFAS film remained. Also, in the as-deposited state, a exchange-biased CFAS/AlO x /CFAS MTJ deposited on a Ta/Ru buffer layer exhibited a relatively high tunnel magnetoresistance (TMR) of 13% at room temperature, which resulted from the highly B2-ordered CFAS layer and the perfectly flat surface roughness resulting from the use of the Ta/Ru buffer layer.

  4. Influence of the fabrication conditions on the high frequency magnetic response of melt spun Fe73.5Si13.5B9Nb3Cu1

    International Nuclear Information System (INIS)

    Pascual, L.; El Ghannami, M.; Vazquez, M.; Gomez-Polo, C.; Univ. Publica de Navarra, Pamplona

    1998-01-01

    The aim of this work is to analyze the influence of the fabrication conditions on the magnetic properties of Fe 73.5 Si 13.5 B 9 Nb 3 Cu 1 melt-spun nanocrystalline ribbons. Different initial structures, amorphous and partially crystalline, have been obtained during the rapid solidification procedure. The structural characterization shows that a decrease in the quenching rate through a reduction in the tangential wheel velocity, gives rise to a partially crystalline state, characterized by the appearance of a textured α-FeSi nanocrystalline phase. The occurrence of the crystalline fraction in the initial as-cast state gives rise to a magnetic hardening with respect to the amorphous sample casted at higher quenching rate. However, the evolution of coercivity under thermal treatments is roughly independent of the initial structure. Moreover, a detailed analysis of the ac susceptibility as a function of annealing temperature shows that the ribbon obtained at lower quenching rate presents higher susceptibility values in the optimum magnetic state (T a = 550 C. 1 h) in a wide range of driving frequency (up to 100 kHz). (orig.)

  5. Effect of Thermal Annealing on Light-Induced Minority Carrier Lifetime Enhancement in Boron-Doped Czochralski Silicon

    International Nuclear Information System (INIS)

    Wang Hong-Zhe; Zheng Song-Sheng; Chen Chao

    2015-01-01

    The effect of thermal annealing on the light-induced effective minority carrier lifetime enhancement (LIE) phenomenon is investigated on the p-type Czochralski silicon (Cz-Si) wafer passivated by a phosphorus-doped silicon nitride (P-doped SiN_x) thin film. The experimental results show that low temperature annealing (below 300°C) can not only increase the effective minority carrier lifetime of P-doped SiN_x passivated boron-doped Cz-Si, but also improve the LIE phenomenon. The optimum annealing temperature is 180°C, and its corresponding effective minority carrier lifetime can be increased from initial 7.5 μs to maximum 57.7 μs by light soaking within 15 min after annealing. The analysis results of high-frequency dark capacitance-voltage characteristics reveal that the mechanism of the increase of effective minority carrier lifetime after low temperature annealing is due to the sharp enhancement of field effect passivation induced by the negative fixed charge density, while the mechanism of the LIE phenomenon after low temperature annealing is attributed to the enhancement of both field effect passivation and chemical passivation. (paper)

  6. Enhanced J c property in nano-SiC doped thin MgB2/Fe wires by a modified in situ PIT process

    International Nuclear Information System (INIS)

    Jiang, C.H.; Nakane, T.; Hatakeyama, H.; Kumakura, H.

    2005-01-01

    A modified in situ PIT process, which included a short time pre-annealing and intermediate drawing step in the conventional in situ PIT process, was employed to fabricate thin round MgB 2 /Fe wires from MgH 2 and B powders. The pores and cracks resulted from the MgH 2 decomposition during the pre-annealing were effectively eliminated by the intermediate drawing step, which subsequently increased the core density and J c property of final heat treated wires. A higher reduction rate after the pre-annealing led to a larger enhancement in J c within this study. The reproducibility of our new process on the J c improvement in MgB 2 wires was confirmed in two series of wires doped with 5 mol% or 10 mol% nano-SiC particles separately

  7. Optically transparent boron-doped nanocrystalline diamond films for spectroelectrochemical measurements on different substrates

    International Nuclear Information System (INIS)

    Sobaszek, M.; Bogdanowicz, R.; Pluciński, J.; Siuzdak, K.; Skowroński, Ł.

    2016-01-01

    Fabrication process of optically transparent boron nanocrystalline diamond (B- NCD) electrode on silicon and quartz substrate was shown. The B-NCD films were deposited on the substrates using Microwave Plasma Assisted Chemical Vapor Deposition (MWPACVD) at glass substrate temperature of 475 °C. A homogenous, continuous and polycrystalline surface morphology with high sp 3 content in B-NCD films and film thickness depending from substrate in the range of 60-300 nm was obtained. The high refraction index and transparency in visible (VIS) wavelength range was achieved. Moreover, cyclic voltammograms (CV) were recorded to determine reaction reversibility at the B-NCD electrode. CV measurements in aqueous media consisting of 1 mM K 3 [Fe(CN) 6 ] in 0.5 M Na 2 SO 4 demonstrated relatively fast kinetics expressed by a redox peak splitting below 503 mV for B-NCD/silicon and 110 mv for B-NCD/quartz

  8. Silicon germanium as a novel mask for silicon deep reactive ion etching

    KAUST Repository

    Serry, Mohamed Y.

    2013-10-01

    This paper reports on the use of p-type polycrystalline silicon germanium (poly-Si1-xGex) thin films as a new masking material for the cryogenic deep reactive ion etching (DRIE) of silicon. We investigated the etching behavior of various poly-Si1-xGex:B (0silicon, silicon oxide, and photoresist was determined at different etching temperatures, ICP and RF powers, and SF6 to O2 ratios. The study demonstrates that the etching selectivity of the SiGe mask for silicon depends strongly on three factors: Ge content; boron concentration; and etching temperature. Compared to conventional SiO2 and SiN masks, the proposed SiGe masking material exhibited several advantages, including high etching selectivity to silicon (>1:800). Furthermore, the SiGe mask was etched in SF6/O2 plasma at temperatures ≥ - 80°C and at rates exceeding 8 μm/min (i.e., more than 37 times faster than SiO2 or SiN masks). Because of the chemical and thermodynamic stability of the SiGe film as well as the electronic properties of the mask, it was possible to deposit the proposed film at CMOS backend compatible temperatures. The paper also confirms that the mask can easily be dry-removed after the process with high etching-rate by controlling the ICP and RF power and the SF6 to O2 ratios, and without affecting the underlying silicon substrate. Using low ICP and RF power, elevated temperatures (i.e., > - 80°C), and an adjusted O2:SF6 ratio (i.e., ~6%), we were able to etch away the SiGe mask without adversely affecting the final profile. Ultimately, we were able to develop deep silicon- trenches with high aspect ratio etching straight profiles. © 1992-2012 IEEE.

  9. Crystallization induced of amorphous silicon by nickel

    International Nuclear Information System (INIS)

    Schmidt, J.A; Rinaldi, P; Budini, N; Arce, R; Buitrago, R.H

    2008-01-01

    Polycrystalline silicon (pc-Si) deposited on glass substrates is a very promising material for the production of different electronic devices, like thin film transistors, active matrices or solar cells. The crystallization of the amorphous silicon to obtain pc-Si can be achieved with different processes, among which nickel-induced crystallization is because it requires low concentrations of the metal and low annealing temperatures. Nucleation and growth of crystalline silicon are measured by the formation of silicide NiSi 2 , which has a lattice constant very similar to that of Si, and acts as a seed upon which crystalline grains can develop. The size of the pc-Si final grain depends on many factors, such as the initial concentration of Ni, the annealing time and temperature, and the presence of other atoms in the Si structure. This work presents a study on the influence of these parameters on the silicon crystallization process induced by Ni. We deposited a series of hydrogenated amorphous silicon samples (a-Si:H) on glass substrates, using the plasma-enhanced chemical vapor deposition method (PE-CVD) with silane gas (SiH 4 ). The deposition temperature was 200 o C, and we prepared intrinsic samples (i), lightly doped with boron (p), heavily doped with boron (p + ) and heavily doped with phosphorous (n + ). Each sample was divided into eight portions, depositing different concentrations of Ni into each one using the cathodic sputtering method. The concentration of Ni was determined by atomic adsorption spectroscopy, and included from 1.5 1 0 15 to 1.5 1 0 16 at/cm 2 . Later the samples were submitted to different thermal treatments in a circulating nitrogen atmosphere. In order to avoid violent dehydrogenation of the a-Si:H that damages the samples, the annealing was carried out gradually. In a first stage the samples were heated at a velocity of 0.5 o C /min up to 400 o C, holding them for 24 hrs at this temperature in order to reach hydrogen effusion. Heating

  10. Ion assisted deposition of SiO2 film from silicon

    Science.gov (United States)

    Pham, Tuan. H.; Dang, Cu. X.

    2005-09-01

    Silicon dioxide, SiO2, is one of the preferred low index materials for optical thin film technology. It is often deposited by electron beam evaporation source with less porosity and scattering, relatively durable and can have a good laser damage threshold. Beside these advantages the deposition of critical optical thin film stacks with silicon dioxide from an E-gun was severely limited by the stability of the evaporation pattern or angular distribution of the material. The even surface of SiO2 granules in crucible will tend to develop into groove and become deeper with the evaporation process. As the results, angular distribution of the evaporation vapor changes in non-predicted manner. This report presents our experiments to apply Ion Assisted Deposition process to evaporate silicon in a molten liquid form. By choosing appropriate process parameters we can get SiO2 film with good and stable property.

  11. Fabrication of graphene oxide decorated with Fe3O4@SiO2 for immobilization of cellulase

    Science.gov (United States)

    Li, Yue; Wang, Xiang-Yu; Jiang, Xiao-Ping; Ye, Jing-Jing; Zhang, Ye-Wang; Zhang, Xiao-Yun

    2015-01-01

    Fe3O4@SiO2-graphene oxide (GO) composites were successfully fabricated by chemical binding of functional Fe3O4@SiO2 and GO and applied to immobilization of cellulase via covalent attachment. The prepared composites were further characterized by transmission electron microscopy and Fourier transform infrared spectroscopy. Fe3O4 nanoparticles (NPs) were monodisperse spheres with a mean diameter of 17 ± 0.2 nm. The thickness of SiO2 layer was calculated as being 6.5 ± 0.2 nm. The size of Fe3O4@SiO2 NPs was 24 ± 0.3 nm, similar to that of Fe3O4@SiO2-NH2. Fe3O4@SiO2-GO composites were synthesized by linking of Fe3O4@SiO2-NH2 NPs to GO with the catalysis of EDC and NHS. The prepared composites were used for immobilization of cellulase. A high immobilization yield and efficiency of above 90 % were obtained after the optimization. The half-life of immobilized cellulase (722 min) was 3.34-fold higher than that of free enzyme (216 min) at 50 °C. Compared with the free cellulase, the optimal temperature of the immobilized enzyme was not changed; but the optimal pH was shifted from 5.0 to 4.0, and the thermal stability was enhanced. The immobilized cellulase could be easily separated and reused under magnetic field. These results strongly indicate that the cellulase immobilized onto the Fe3O4@SiO2-GO composite has potential applications in the production of bioethanol.

  12. Damage formation and recovery in Fe implanted 6H–SiC

    CERN Document Server

    Miranda, Pedro; Catarino, Norberto; Lorenz, Katharina; Correia, João Guilherme; Alves, Eduardo

    2012-01-01

    Silicon carbide doped with magnetic ions such as Fe, Mn, Ni or Co could make this wide band gap semiconductor part of the diluted magnetic semiconductor family. In this study, we report the implantation of 6H-SiC single crystals with magnetic $^{56}$Fe$^{+}$ ions with an energy of 150 keV. The samples were implanted with 5E14 Fe$^+$/cm$^{2}$ and 1E16 Fe$^+$/cm$^{2}$ at different temperatures to study the damage formation and lattice site location. The samples were subsequently annealed up to 1500°C in vacuum in order to remove the implantation damage. The effect of the annealing was followed by Rutherford Backscattering/Channeling (RBS/C) measurements. The results show that samples implanted above the critical amorphization temperature reveal a high fraction of Fe incorporated into regular sites along the [0001] axis. After the annealing at 1000°C, a maximum fraction of 75%, corresponding to a total of 3.8E14 Fe$^{+}$/cm$^{2}$, was measured in regular sites along the [0001] axis. A comparison is made betwee...

  13. The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles

    Energy Technology Data Exchange (ETDEWEB)

    Aboy, Maria [Campus Miguel Delibes, University of Valladolid, 47011 Valladolid (Spain)]. E-mail: marabo@tel.uva.es; Pelaz, Lourdes [Campus Miguel Delibes, University of Valladolid, 47011 Valladolid (Spain); Marques, Luis A. [Campus Miguel Delibes, University of Valladolid, 47011 Valladolid (Spain); Lopez, Pedro [Campus Miguel Delibes, University of Valladolid, 47011 Valladolid (Spain); Barbolla, Juan [Campus Miguel Delibes, University of Valladolid, 47011 Valladolid (Spain); Venezia, V.C. [Philips Research Leuven, Leuven (Belgium); Duffy, R. [Philips Research Leuven, Leuven (Belgium); Griffin, Peter B. [Stanford University, Stanford, CA (United States)

    2004-12-15

    Boron cluster formation and dissolution in high concentration B profiles and the role of Si interstitials in these processes are analyzed by kinetic non-lattice Monte Carlo atomist