Effect of Boron on Microstructure and Microhardness Properties of Mo-Si-B Based Coatings Produced Via TIG Process

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Islak S.

2016-09-01

Full Text Available In this study, Mo-Si-B based coatings were produced using tungsten inert gas (TIG process on the medium carbon steel because the physical, chemical, and mechanical properties of these alloys are particularly favourable for high-temperature structural applications. It is aimed to investigate of microstructure and microhardness properties of Mo-Si-B based coatings. Optical microscopy (OM, X-ray diffraction (XRD and scanning electron microscopy (SEM were used to characterize the microstructures of Mo-Si-B based coatings. The XRD results showed that microstructure of Mo–Si–B coating consists of α-Mo, α-Fe, Mo2B, Mo3Si and Mo5SiB2 phases. It was reported that the grains in the microstructure were finer with increasing amounts of boron which caused to occur phase precipitations in the grain boundary. Besides, the average microhardness of coatings changed between 735 HV0.3 and 1140 HV0.3 depending on boron content.

LiBSi2: a tetrahedral semiconductor framework from boron and silicon atoms bearing lithium atoms in the channels.

Science.gov (United States)

Zeilinger, Michael; van Wüllen, Leo; Benson, Daryn; Kranak, Verina F; Konar, Sumit; Fässler, Thomas F; Häussermann, Ulrich

2013-06-03

Silicon swallows up boron: The novel open tetrahedral framework structure (OTF) of the Zintl phase LiBSi2 was made by applying high pressure to a mixture of LiB and elemental silicon. The compound represents a new topology in the B-Si net (called tum), which hosts Li atoms in the channels (see picture). LiBSi2 is the first example where B and Si atoms form an ordered common framework structure with B engaged exclusively in heteronuclear B-Si contacts.

Microstructure and magnetocaloric effect in cast LaFe11.5Si1.5Bx (x=0.5, 1.0)

International Nuclear Information System (INIS)

Zhang, H.; Long, Y.; Cao, Q.; Mudryk, Ya.; Zou, M.; Gschneidner, K.A.; Pecharsky, V.K.

2010-01-01

Phase formation, structure, and the magnetocaloric effect (MCE) in as-cast LaFe 11.5 Si 1.5 B x (x=0.5, 1.0) compounds have been studied. The Curie temperatures, T C , are ∼211 and 230 K for x=0.5 and 1.0, respectively, which are higher than that of annealed LaFe 11.5 Si 1.5 (T C =183 K), while the maximum magnetic entropy changes at the respective T C under a magnetic field change of 0-5 T are 7.8 and 5.8 J/(kg K). Wavelength dispersive spectrometry (WDS) analysis shows that only a small fraction of boron atoms is dissolved in the NaZn 13 -type structure phase, and that the compositions of the as-cast LaFe 11.5 Si 1.5 B x (x=0.5, 1.0) alloys are much different from the intended nominal compositions. These as-cast alloys exhibit second-order magnetic phase transitions and low MCEs. However, based on the relative cooling power, the as-cast LaFe 11.5 Si 1.5 B x alloys are promising candidates for magnetic refrigerants over a wide temperature range.

High sensitivity boron quantification in bulk silicon using the {sup 11}B(p,{alpha}{sub 0}){sup 8}Be nuclear reaction

Energy Technology Data Exchange (ETDEWEB)

Moro, Marcos V.; Silva, Tiago F. da; Added, Nemitala; Rizutto, Marcia A.; Tabacniks, Manfredo H. [Instituto de Fisica da Universidade de Sao Paulo, C.P. 66318, 05315-970 Sao Paulo, SP (Brazil); Neira, John B.; Neto, Joao B. F. [Institute of Research Tecnology, Cidade Universitaria, SP, 05508-091 (Brazil)

2013-05-06

There is a great need to quantify sub-ppm levels of boron in bulk silicon. There are several methods to analyze B in Si: Nuclear Reaction Analysis using the {sup 11}B(p,{alpha}{sub 0}){sup 8}Be reaction exhibits a quantification limit of some hundreds ppm of B in Si. Heavy Ion Elastic Recoil Detection Analysis offers a detection limit of 5 to 10 at. ppm. Secondary Ion Mass Spectrometry is the method of choice of the semiconductor industry for the analysis of B in Si. This work verifies the use of NRA to quantify B in Si, and the corresponding detection limits. Proton beam with 1.6 up to 2.6 MeV was used to obtain the cross-section of the {sup 11}B(p,{alpha}{sub 0}){sup 8}Be nuclear reaction at 170 Degree-Sign scattering angle. The results show good agreementwith literature indicating that the quantification of boron in silicon can be achieved at 100 ppm level (high sensitivity) at LAMFI-IFUSP with about 16% uncertainty. Increasing the detection solid angle and the collected beam charge, can reduce the detection limit to less than 100 ppm meeting present technological needs.

Effect of wheel speed on magnetic and mechanical properties of melt spun Fe-6.5 wt.% Si high silicon steel

Science.gov (United States)

Ouyang, Gaoyuan; Jensen, Brandt; Tang, Wei; Dennis, Kevin; Macziewski, Chad; Thimmaiah, Srinivasa; Liang, Yongfeng; Cui, Jun

2018-05-01

Fe-Si electric steel is the most widely used soft magnetic material in electric machines and transformers. Increasing the silicon content from 3.2 wt.% to 6.5 wt.% brings about large improvement in the magnetic and electrical properties. However, 6.5 wt.% silicon steel is inherited with brittleness owing to the formation of B2 and D03 ordered phase. To obtain ductility in Fe-6.5wt.% silicon steel, the ordered phase has to be bypassed with methods like rapid cooling. In present paper, the effect of cooling rate on magnetic and mechanical properties of Fe-6.5wt.% silicon steel is studied by tuning the wheel speed during melt spinning process. The cooling rate significantly alters the ordering and microstructure, and thus the mechanical and magnetic properties. X-ray diffraction data shows that D03 ordering was fully suppressed at high wheel speeds but starts to nucleate at 10m/s and below, which correlates with the increase of Young's modulus towards low wheel speeds as tested by nanoindentation. The grain sizes of the ribbons on the wheel side decrease with increasing wheel speeds, ranging from ˜100 μm at 1m/s to ˜8 μm at 30m/s, which lead to changes in coercivity.

Electroless siliconizing Fe-3% Cr-3% Si alloy

International Nuclear Information System (INIS)

Nurlina, Enung; Darmono, Budy; Purwadaria, Sunara

2000-01-01

In this research Fe-3%Cr-3%Mo-3%Si and Fe-3%Cr-3%Cu-3%Si alloys had been coated by silicon metal without electricity current which knows as electroless siliconizing. Coating was conducted by immersed sampler into melt fluoride-chloride salt bath at temperature of 750 o C for certain period. The layer consisted of Fe3Si phase. Observation by microscope optic and EDAX showed that the silicide layer were thick enough, adherent, free for crack and had silicon content on the surface more than 15%. The growth rate of silicide layer followed parabolic rate law, where the process predominantly controlled by interdiffusion rate in the solid phase. Key words : electroless siliconizing, the melt fluoride- chloride salt mix, silicide layer

LiBSi{sub 2}: a tetrahedral semiconductor framework from boron and silicon atoms bearing lithium atoms in the channels

Energy Technology Data Exchange (ETDEWEB)

Zeilinger, Michael; Faessler, Thomas F. [Department of Chemistry, Technische Universitaet Muenchen, Garching (Germany); Wuellen, Leo van [Department of Physics, University of Augsburg (Germany); Benson, Daryn [Department of Physics, Arizona State University, Tempe, AZ (United States); Kranak, Verina F.; Konar, Sumit; Haeussermann, Ulrich [Department of Materials and Environmental Chemistry, Stockholm University (Sweden)

2013-06-03

Silicon swallows up boron. The novel open tetrahedral framework structure (OTF) of the Zintl phase LiBSi{sub 2} was made by applying high pressure to a mixture of LiB and elemental silicon. The compound represents a new topology in the B-Si net (called tum), which hosts Li atoms in the channels. LiBSi{sub 2} is the first example where B and Si atoms form an ordered common framework structure with B engaged exclusively in heteronuclear B-Si contacts. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Thermodynamics of Boron Removal from Silicon Using CaO-MgO-Al2O3-SiO2 Slags

Science.gov (United States)

Jakobsson, Lars Klemet; Tangstad, Merete

2018-04-01

Slag refining is one of few metallurgical methods for removal of boron from silicon. It is important to know the thermodynamic properties of boron in slags to understand the refining process. The relation of the distribution coefficient of boron to the activity of silica, partial pressure of oxygen, and capacity of slags for boron oxide was investigated. The link between these parameters explains why the distribution coefficient of boron does not change much with changing slag composition. In addition, the thermodynamic properties of dilute boron oxide in CaO-MgO-Al2O3-SiO2 slags was determined. The ratio of the activity coefficient of boron oxide and silica was found to be the most important parameter for understanding changes in the distribution coefficient of boron for different slags. Finally, the relation between the activity coefficient of boron oxide and slag structure was investigated. It was found that the structure can explain how the distribution coefficient of boron changes depending on slag composition.

Permeability and giant magnetoimpedance in Co69Fe4.5X1.5Si10B15 (X=Cr, Mn, Ni) amorphous ribbons

International Nuclear Information System (INIS)

Byon, Kwang Seok; Yu, Seong-Cho; Kim, Cheol Gi

2001-01-01

The magnetoimpedance (MI) has been measured in the amorphous ribbons of the soft ferromagnetic alloy Co 69 Fe 4.5 X 1.5 Si 10 B 15 (X=Cr, Mn, Ni) as functions of frequency (f). For all of the three samples, at low frequency, f≤5MHz, the MI ratio increases with increasing frequency, but the MI ratio decreases at high frequency, f≥5MHz. The MI profiles are not changed at low frequency regions of f≤1MHz in the amorphous ribbons. The MI ratio at high frequency of f=5MHz becomes 57% in Co 69 Fe 4.5 Cr 1.5 Si 10 B 15 , but the MI ratio becomes 30% in Co 69 Fe 4.5 Mn 1.5 Si 10 B 15 and Co 69 Fe 4.5 Ni 1.5 Si 10 B 15 . The MI ratio at f=10MHz becomes 45% in Co 69 Fe 4.5 Cr 1.5 Si 10 B 15 and the MI ratio becomes 23% in Co 69 Fe 4.5 Mn 1.5 Si 10 B 15 and Co 69 Fe 4.5 Ni 1.5 Si 10 B 15 , respectively. The maximum values of field sensitivity are 2.7(X=Cr), 2.5(X=Mn), 2.2(X=Ni)%/Oe for f=5MHz. [copyright] 2001 American Institute of Physics

Dirac State in the FeB2 Monolayer with Graphene-Like Boron Sheet.

Science.gov (United States)

Zhang, Haijun; Li, Yafei; Hou, Jianhou; Du, Aijun; Chen, Zhongfang

2016-10-12

By introducing the commonly utilized Fe atoms into a two-dimensional (2D) honeycomb boron network, we theoretically designed a new Dirac material of FeB 2 monolayer with a Fermi velocity in the same order of graphene. The electron transfer from Fe atoms to B networks not only effectively stabilizes the FeB 2 networks but also leads to the strong interaction between the Fe and B atoms. The Dirac state in FeB 2 system primarily arises from the Fe d orbitals and hybridized orbital from Fe-d and B-p states. The newly predicted FeB 2 monolayer has excellent dynamic and thermal stabilities and is also the global minimum of 2D FeB 2 system, implying its experimental feasibility. Our results are beneficial to further uncovering the mechanism of the Dirac cones and providing a feasible strategy for Dirac materials design.

Reduced-pressure chemical vapor deposition of boron-doped Si and Ge layers

International Nuclear Information System (INIS)

Bogumilowicz, Y.; Hartmann, J.M.

2014-01-01

We have studied the in-situ boron (B) doping of germanium (Ge) and silicon (Si) in Reduced Pressure-Chemical Vapor Deposition. Three growth temperatures have been investigated for the B-doping of Ge: 400, 600 and 750 °C at a constant growth pressure of 13300 Pa (i.e. 100 Torr). The B concentration in the Ge:B epilayer increases linearly with the diborane concentration in the gaseous phase. Single-crystalline Ge:B layers with B concentrations in-between 9 ∙ 10 17 and 1 ∙ 10 20 cm −3 were achieved. For the in-situ B doping of Si at 850 °C, two dichlorosilane mass flow ratios (MFR) have been assessed: F[SiH 2 Cl 2 ]/F[H 2 ] = 0.0025 and F[SiH 2 Cl 2 ]/F[H 2 ] = 0.0113 at a growth pressure of 2660 Pa (i.e. 20 Torr). Linear boron incorporation with the diborane concentration in the gas phase has been observed and doping levels in-between 3.5 ∙ 10 17 and 1 ∙ 10 20 cm −3 were achieved. We almost kept the same ratio of B versus Si atoms in the gas phase and in the Si epilayer. By contrast, roughly half of the B atoms present in the gas phase were incorporated in the Ge:B layers irrespective of the growth temperature. X-Ray Diffraction (XRD) allowed us to extract from the angular position of the Ge:B layer diffraction peak the substitutional B concentration. Values close to the B concentrations obtained by 4-probe resistivity measurements were obtained. Ge:B layers were smooth (< 1 m root mean square roughness associated with 20 × 20 μm 2 Atomic Force Microscopy images). Only for high F[B 2 H 6 ]/F[GeH 4 ] MFR (3.2 10 −3 ) did the Ge:B layers became rough; they were however still mono-crystalline (XRD). Above this MFR value, Ge:B layers became polycrystalline. - Highlights: • Boron doping of germanium and silicon in Reduced Pressure-Chemical Vapor Deposition • Linear boron incorporation in Ge:B and Si:B with the diborane flow • Single-crystal Ge:B layers with B concentrations in-between 9 ∙ 10 17 and 1 ∙ 10 20 cm −3 • Single-crystal Si:B

Segregation of boron implanted into silicon on angular configurations of silicon/silicon dioxide oxidation interface

CERN Document Server

Tarnavskij, G A; Obrekht, M S

2001-01-01

One studies segregation of boron implanted into silicon when a wave (interface) of oxidation moves within it. There are four types of angular configurations of SiO sub 2 /Si oxidation interface, that is: direct and reverse shoulders, trench type cavities and a square. By means of computer-aided simulation one obtained and analyzed complex patterns of B concentration distribution within Si, SiO sub 2 domains and at SiO sub 2 /Si interface for all types of angular configurations of the oxidation interface

The morphology of ceramic phases in B x C-SiC-Si infiltrated composites

International Nuclear Information System (INIS)

Hayun, S.; Frage, N.; Dariel, M.P.

2006-01-01

The present communication is concerned with the effect of the carbon source on the morphology of reaction bonded boron carbide (B 4 C). Molten silicon reacts strongly and rapidly with free carbon to form large, faceted, regular polygon-shaped SiC particles, usually embedded in residual silicon pools. In the absence of free carbon, the formation of SiC relies on carbon that originates from within the boron carbide particles. Examination of the reaction bonded boron carbide revealed a core-rim microstructure consisting of boron carbide particles surrounded by secondary boron carbide containing some dissolved silicon. This microstructure is generated as the outcome of a dissolution-precipitation process. In the course of the infiltration process molten Si dissolves some boron carbide until its saturation with B and C. Subsequently, precipitation of secondary boron carbide enriched with boron and silicon takes place. In parallel, elongated, strongly twinned, faceted SiC particles are generated by rapid growth along preferred crystallographic directions. This sequence of events is supported by X-ray diffraction and microcompositional analysis and well accounted for by the thermodynamic analysis of the ternary B-C-Si system. - Graphical abstract: Bright field TEM image of the rim area between two boron carbide grains

Investigation of the morphology and electrical characteristics of FeSi2 quantum dots on silicon

International Nuclear Information System (INIS)

Dozsa, L.; Molnar, G.; Horvath, Zs.J.; Toth, A.L.; Gyulai, J.; Raineri, V.; Giannazzo, F.

2004-01-01

β-FeSi 2 quantum dots (QD) were grown by evaporating 2, 4 and 7 nm Fe onto Si(1 0 0) wafers and in situ annealed at 600 deg. C for 10 min. QDs were grown also by reactive deposition epitaxy (RDE) evaporating 2 nm Fe onto a 600 deg. C Si substrate and annealed further for 5 min. MIS structures were prepared by evaporating SiO x over the QDs and Al dots on the oxide. The SEM investigations show the density of the QDs is about 10 10 cm -2 in the 2 and 4 nm Fe samples, and it increases to about 3x10 11 cm -2 in the 7 nm Fe sample. The nanoscope investigation shows well resolved QDs only in the 7 nm Fe samples, but their density and size do not allow individual characterization of the QDs by scanning capacitance microscopic measurements. In the RDE samples the QDs are small and irregular, indicating the need for thicker Fe layer. Capacitance-voltage (C-V) measurements show point defects generated by silicidation which compensate the silicon doping (2x10 15 cm -3 ) in about 1 μm depth. C-V results show that in the RDE samples less point defect are generated, their concentration is lower than doping of the Si wafers. The electrical characteristics of MIS structures show that the room temperature deposited iron degrades the I-V characteristics, and induces leakage

Improved ductility of Ni3Si by microalloying with boron or carbon

International Nuclear Information System (INIS)

Taub, A.I.; Briant, C.L.

1989-01-01

The effects of boron and carbon additions on the tendency for intergranular fracture in trinickel silicide intermetallics are reported. Melt spinning of Ni 77 Si 23 alloyed with 0.1 at. pct boron results in full bend ductility and complete transgranular fracture compared with brittle intergranular fracture for the unmodified compound. Alloying with 0.1 at. pct carbon also produced full bend ductility but a mixed mode failure (30 pct transgranular). For both carbon and boron additions, reducing the Ni concentration of the base compound results in a greater percentage of intergranular fracture. For Ni 77 Si 23 , the solubility limit is between 0.1 and 0.2 t. pct boron. For compounds with silicon concentrations of 23.5 and 24.0 at. pct, the solubility limit is less than 0.1 at. pct boron. Boron additions above the solubility limit result in Ni 3 B precipitates which degrade the bend ductility and increase the percentage of intergranular fracture. Alloying with carbon above the solubility limit ( 77 Si 23 , increasing the carbon concentration from 0.1 to 1.0 at. pct resulted in no change in the ductility. Auger examination of the grain boundary composition showed strong segregation of both boron and carbon. Enrichment in silicon concentration was also observed

High quality β-FeSi2 thin films prepared on silicon (100) by using pulsed laser ablation of Fe target

International Nuclear Information System (INIS)

Xu, S.C.; Yang, C.; Liu, M.; Jiang, S.Z.; Ma, Y.Y.; Chen, C.S.; Gao, X.G.; Sun, Z.C.; Hu, B.; Wang, C.C.; Man, B.Y.

2012-01-01

High quality β-FeSi 2 thin films have been fabricated on silicon (100) substrate by the pulsed laser deposition (PLD) technique with the Fe and sintered FeSi 2 targets. The crystalline quality and surface morphology of the samples were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM), X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy. These results indicate that the samples prepared with a Fe target can acquire a better crystalline quality and a smoother surface than those with a sintered FeSi 2 target. The reasons were discussed with subsurface superheating mechanism. The intrinsic PL spectrum attributed to the interband transition of β-FeSi 2 for all the samples was compared, showing that the film prepared with Fe target can acquire a good PL property by optimizing experimental parameters. It is suggested that sputtering Fe on Si substrate by the pulsed laser offers a cheap and convenient way to prepare the β-FeSi 2 thin films. -- Highlights: ► β-FeSi 2 films were fabricated by PLD technique with the Fe and FeSi 2 targets. ► The films prepared with Fe target have good crystalline quality and smooth surface. ► The Fe target prepared film acquired a high PL intensity. ► Sputtering Fe on Si substrate offers a convenient way to prepare the β-FeSi 2 films.

FeNbB bulk metallic glass with high boron content

Energy Technology Data Exchange (ETDEWEB)

Stoica, M.; Das, Jayanta; Eckert, Juergen [IFW Dresden, Institute for Complex Materials, P.O. Box 270016, D-01171 Dresden (Germany); Hajlaoui, Khalil; Yavari, Alain Reza [LTPCM-CNRS, I.N.P. Grenoble, 1130 Rue de la Piscine, BP 75, F-38402 University Campus (France)

2007-07-01

Fe-based alloys able to form magnetic bulk metallic glasses (BMGs) are of the type transition metal - metalloid and often contain 5 or more elements. Usually, the metalloid content is around 20 atomic %. Very recently, the Fe{sub 66}Nb{sub 4}B{sub 30} alloy was found to be able to form BMG by copper mold casting technique, despite its high metalloid content. Several composition with boron contents around 30 at. % or even higher were calculated since 1993 as possible compositions of the remaining amorphous matrix after the first stage of nanocrystallization of Finemet-type Fe{sub 77}Si{sub 14}B{sub 9} glassy ribbons with 0.5 to 1 atomic % Cu and a few percent Nb addition. Melt-spun ribbons of all calculated compositions were found to be glassy. The composition of the ternary Fe-based BMG investigated in the present study resulted as an optimization of all possibilities. The alloy is ferromagnetic with glass transition temperature T{sub g}=845 K, crystallisation temperature T{sub x}=876 K, liquidus temperature T{sub liq}=1451 K and mechanical strength of 4 GPa. The coercivity of as-cast samples is very low, around 1.5 A/m. The present contribution aims at discussing the thermal stability, mechanical and magnetic properties of the Fe{sub 66}Nb{sub 4}B{sub 30} BMG.

NMR investigation of boron impurities in refined metallurgical grade silicon

Energy Technology Data Exchange (ETDEWEB)

Grafe, Hans-Joachim; Loeser, Wolfgang; Schmitz, Steffen; Sakaliyska, Miroslava [Leibniz Institute for Solid State and Materials Research (IFW), Dresden (Germany); Wurmehl, Sabine [Leibniz Institute for Solid State and Materials Research (IFW), Dresden (Germany); Institute for Solid State Physics, Technische Universitaet Dresden (Germany); Eisert, Stefan; Reichenbach, Birk; Mueller, Tim [Adensis GmbH, Dresden (Germany); Acker, Joerg; Rietig, Anja; Ducke, Jana [Department of Chemistry, Faculty for Natural Sciences, Brandenburg Technical University Cottbus-Senftenberg, Senftenberg (Germany)

2015-09-15

The nuclear magnetic resonance (NMR) method was applied for tracking boron impurities in the refining process of metallurgical grade (MG) silicon. From the NMR signal of the {sup 11}B isotope at an operating temperature 4.2 K, the boron concentration can be estimated down to the order of 1-10 wppm B. After melting and resolidification of MG-Si alloyed with Ca and Ti, a major fraction of B impurities remains in the Si solid solution as inferred from the characteristic NMR frequency. The alloying element Ti does not form substantial fractions of TiB{sub 2}. Acid leaching of crushed powders of MG-Si alloyed with Ca and Ti can diminish the initial impurity content of B suggesting its accumulation in the grain boundary phases. NMR signals of TiB{sub 2} at 4.2 K and room temperature (RT), and of poly-Si with different B doping at 4.2 K. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

A novel boron-rich quaternary scandium borocarbosilicide Sc3.67-xB41.4-y-zC0.67+zSi0.33-w

International Nuclear Information System (INIS)

Tanaka, Takaho; Yamamoto, Akiji; Sato, Akira

2004-01-01

A novel quaternary scandium borocarbosilicide Sc 3.67-x B 41.4-y-z C 0.67+z Si 0.33-w was found. Single crystallites were obtained as an intergrowth phase in the float-zoned single crystal of Sc 0.83-x B 10.0-y C 0.17+y Si 0.083-z that has a face-centered cubic crystal structure. Single crystal structure analysis revealed that the compound has a hexagonal structure with lattice constants a = b = 1.43055(8) nm and c = 2.37477(13) nm and space group P6-barm2 (No. 187). The crystal composition calculated from the structure analysis for the crystal with x = 0.52, y = 1.42, z = 1.17, and w = 0.02 was ScB 12.3 C 0.58 Si 0.10 and that agreed rather well with the composition of ScB 11.5 C 0.61 Si 0.04 measured by EPMA. In the crystal structure that is a new structure type of boron-rich borides, there are 79 structurally independent atomic sites, 69 boron and/or carbon sites, two silicon sites and eight scandium sites. Boron and carbon form seven structurally independent B 12 icosahedra, one B 9 polyhedron, one B 10 polyhedron, one irregularly shaped B 16 polyhedron in which only 10.7 boron atoms are available because of partial occupancies and 10 bridging sites. All polyhedron units and bridging site atoms interconnect each other forming a three-dimensional boron framework structure. Sc atoms reside in the open spaces in the boron framework structure

Phase transformation in rapidly quenched Fe-Cr-Co-Mo-Ti-Si-B alloys

Science.gov (United States)

Zhukov, D. G.; Shubakov, V. S.; Zhukova, E. Kh; Gorshenkov, M. V.

2018-03-01

The research results of phase transformations in Fe-24Cr-16Co-3Mo-0.2Ti-1Si-B alloys (with a boron content of 1 to 3% by mass) obtained by rapid quenching are presented. The structure formation regularities during the melt spinning and during the subsequent crystallization annealing in rapidly quenched bands of the Fe-Cr-Co-Mo-Ti-Si-B system alloys were studied. The changes in the phase composition of the rapidly quenched Fe-Cr-Co-Mo-Ti- Si-B system alloys after quenching at various quench rates and at different boron concentrations in the alloys are studied. It is shown that during crystallization from an amorphous state, at temperatures above 570 °C, in addition to the α-phase, the σ-phase appears first, followed by the γ-phase. Heat treatment of rapidly quenched bands to high-coercive state was carried out. A qualitative assessment of magnetic properties in a high-coercivity state was carried out. An evaluation of the level of magnetic properties in a high-coercivity state allows us to conclude that the application of a magnetic field during crystallization from an amorphous state leads to anisotropy of the magnetic properties, that is, an anisotropic effect of thermo-magnetic treatment is detected.

Boron-enhanced diffusion of boron from ultralow-energy boron implantation

International Nuclear Information System (INIS)

Agarwal, A.; Eaglesham, D.J.; Gossmann, H.J.; Pelaz, L.; Herner, S.B.; Jacobson, D.C.

1998-01-01

The authors have investigated the diffusion enhancement mechanism of BED (boron enhanced diffusion), wherein the boron diffusivity is enhanced three to four times over the equilibrium diffusivity at 1,050 C in the proximity of a silicon layer containing a high boron concentration. It is shown that BED is associated with the formation of a fine-grain polycrystalline silicon boride phase within an initially amorphous Si layer having a high B concentration. For 0.5 keV B + , the threshold implantation dose which leads to BED lies between 3 x 10 14 and of 1 x 10 15 /cm -2 . Formation of the shallowest possible junctions by 0.5 keV B + requires that the implant dose be kept lower than this threshold

Microstrucural characterization of gas atomized Fe{sub 73.5}Si{sub 13.5}B{sub 9}Nb{sub 3}Cu{sub 1} and Fe{sub 97}Si{sub 3} alloys

Energy Technology Data Exchange (ETDEWEB)

Garcia-Escorial, A., E-mail: age@cenim.csic.es [CENIM-CSIC, Avda. Gregorio del Amo, 8, 28040 Madrid (Spain); Lieblich, M. [CENIM-CSIC, Avda. Gregorio del Amo, 8, 28040 Madrid (Spain); Lopez, M.; Marin, P. [Instituto de Magnetismo Aplicado, P.O. Box 155, 28230 Madrid (Spain)

2011-06-15

Research highlights: > Two FeSi-base alloys as precursors for small dimension soft magnets. > Small particles rapidly solidified by gas atomisation. > Increase effective magnetic anisotropy constant by alloying segregation. > Magnetic hardenning due to volume decrease. - Abstract: Powder particles of Fe{sub 73.5}Si{sub 13.5}B{sub 9}Nb{sub 3}Cu{sub 1} and Fe{sub 97}Si{sub 3} soft magnetic alloys have been prepared by gas atomization. The gas atomized powder was microstructurally characterized and the dependence of coercivity with the composition and powder particle size investigated. As-atomized powder particles of both compositions were constituted by a bcc {alpha}-Fe (Si) solid solution. The Fe{sub 73.5}Si{sub 13.5}B{sub 9}Nb{sub 3}Cu{sub 1} powder particles presented a grain microstructure with dendrite structure, which dendrite arms were enriched in Nb. The coercivity increased as the particle size decreased, with a minimum coercivity, of 5 Oe, measured in the Fe{sub 97}Si{sub 3} alloy in the range of 50-100 {mu}m powder particle size. The coercive fields were quite higher in the Fe{sub 73.5}Si{sub 13.5}B{sub 9}Nb{sub 3}Cu{sub 1} than in the Fe{sub 97}Si{sub 3} powder, due to the Nb addition, which produced a phase segregation that leads to a noticeable magnetic hardening.

Nanocrystallization in amorphous Fe40Ni40(Si+B)19Mo1-2 ribbons

International Nuclear Information System (INIS)

Saiseng, S.; Winotai, P.; Nilpairuch, S.; Limsuwan, P.; Tang, I.M.

2004-01-01

Cut Fe 40 Ni 40 (Si+B) 19 Mo 1-2 ribbons were annealed for 2 h at various temperatures between 350 deg. C and 600 deg. C. XRD and Mossbauer effect spectroscopy (ME) measurements were then performed on all of the ribbons. The magnetic properties of several ribbons were measured using a vibrating sample magnetometer (VSM). A differential thermal analysis scan (over the range 20-800 deg. C) of the as-cast ribbon showed two phase transitions; the first at 454 deg. C and the second at 525 deg. C. Both the XRD and ME spectra of the as cast, the 350 deg. C and 400 deg. C annealed ribbons showed that they were amorphous. The ME spectra of the 450 deg. C, 475 deg. C and 500 deg. C annealed ribbons showed that these ribbons contained α-Fe, α-Fe(Si) and t-Fe 2 B nanocrystallites. For the ribbons annealed above 550 deg. C, crystallites of t-Fe 2 B, t-Fe 3 B, t-Fe 5 SiB 2 and FCC-FeNi appeared, with the α-Fe and α-Fe(Si) crystallites disappearing. The sextets of all of the Fe compounds appeared in the ME spectra of the 525 deg. C annealed ribbon. The VSM measurements supported the picture of a two-stage phase transitions; amorphous phase→a nanocrystalline phase (Fe-containing nanocrystallites in an amorphous matrix) at 454 deg. C and then a second transition, the nanocrystalline phase→a disordered alloy containing Fe-B and Fe-Ni crystallites at 525 deg. C

About the mechanical stability of MnFe(P,Si,B) giant-magnetocaloric materials

Energy Technology Data Exchange (ETDEWEB)

Guillou, F., E-mail: f.guillou@tudelft.nl [FAME, Faculty of Applied Sciences, TU Delft, Mekelweg 15, 2629 JB Delft (Netherlands); Yibole, H.; Dijk, N.H. van [FAME, Faculty of Applied Sciences, TU Delft, Mekelweg 15, 2629 JB Delft (Netherlands); Zhang, L. [BASF Netherlands B.V., Strijkviertel 67, 3454 PK De Meern (Netherlands); Hardy, V. [CRISMAT, Ensicaen, UMR 6508 CNRS, 6 B" d Maréchal Juin, 14050 Caen Cedex (France); Brück, E. [FAME, Faculty of Applied Sciences, TU Delft, Mekelweg 15, 2629 JB Delft (Netherlands)

2014-12-25

Highlights: • Electrical resistivity and hardness show an evolution at T{sub C} with thermal cycling. • Degradation depends on the (c/a) lattice discontinuity at the transition. • Boron substituted materials present an improved mechanical stability. - Abstract: Due to its ability to control the latent heat and the hysteresis (thermal or magnetic) at the first-order transition (FOT) without deteriorating the saturation magnetisation, boron substitution in MnFe(P,Si) materials has recently been reported to be an ideal parameter to reach promising magnetocaloric performances: ΔS ≈ 10 Jkg{sup −1} K{sup −1} and cyclic ΔT of 2.6 K (and more) at a moderate magnetic field of ΔB = 1 T. Additionally, an interesting aspect for applications is the improvement of the mechanical stability in B doped materials compared to the pristine MnFe(P,Si) compounds. These improved mechanical properties were initially supported by naked-eye inspection and the observation of a constant ΔT during a few thousands of magnetic cycles. (Guillou et al., 2014) Here, the evolution upon cycling of MnFe(P,Si,B) materials is studied in a more quantitative and systematic manner. For that purpose transformation temperatures, electrical resistivity, micro-hardness and the microstructure are tracked as a function of the thermal cycling across the FOT for three prototypical compositions in the MnFe(P,Si,B) system. It turns out this set of data confirms the initial finding that B substitution has a positive effect on the mechanical stability. The origin of this improvement is discussed, in particular in respect to the lattice parameter discontinuities at the phase transition.

Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

Energy Technology Data Exchange (ETDEWEB)

Behzad, Somayeh, E-mail: somayeh.behzad@gmail.co [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Moradian, Rostam [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Nano Science and Technology Research Center, Razi University, Kermanshah (Iran, Islamic Republic of); Computational Physical Science Research Laboratory, Department of Nano Science, Institute for Studies in Theoretical Physics and Mathematics (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of); Chegel, Raad [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of)

2010-12-01

The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

International Nuclear Information System (INIS)

Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

2010-01-01

The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

Science.gov (United States)

Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

2010-12-01

The effects of boron doping on the structural and electronic properties of (6,0)@(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

Effect of heat treatment on Fe-B-Si-Nb alloy powder prepared by mechanical alloying

Directory of Open Access Journals (Sweden)

Rodrigo Estevam Coelho

2005-06-01

Full Text Available The effect of heat treatment on crystallization behavior of Fe73.5B15Si10Nb1.5 alloy powder prepared by mechanical alloying was studied. The powder samples were prepared by mechanical alloying (MA and for different milling times (1, 5, 25, 70 and 100 hours. Crystalline powders of iron, boron, silicon and niobium were sealed with tungsten carbide balls in a cylindrical vial under nitrogen atmosphere. The ball-to-powder weight ratio was 20 to 1. A Fritsch Pulverizette 5 planetary ball mill was used for MA the powders at room temperature and at 250 rpm. To study the microstructural evolution, a small amount of powder was collected after different milling times and examined by X-ray diffraction, using CuKalpha radiation (lambda = 0.15418 nm. The crystallization behavior was studied by differential thermal analysis, from 25 up to 1000 °C at a heating rate of 25 °C min-1.

Microscopic models of impurities in silicon

International Nuclear Information System (INIS)

Assali, L.V.C.

1985-01-01

The study of electronic structure of insulated and complex puntual impurities in silicon responsible by the appearing of deep energy levels in the forbiden band of semiconductor, is presented. The molecular cluster model with the treatment of surface orbitals by Watson sphere within the formalism of Xα multiple scattering method, was used. The electronic structures of three clusters representative of perfect silicon crystal, which were used for the impurity studies, are presented. The method was applied to analyse insulated impurities of substitutional and interstitial hydrogen (Si:H and Si:H i ), subtitutional and interstitial iron in neutral and positive charge states (Si:Fe 0 , + , Si:Fe 0 , + ) and substitutional gold in three charge states(Si,Au - , 0 , + ). The thetraedic interstitial defect of silicon (Si:Si i ) was also studied. The complex impurities: neighbour iron pair in the lattice (Si:Fe 2 ), substitutional gold-interstitial iron pair (Si:Au s Fe) and substitutional boron-interstitial hydrogen pair (Si:B s H i ), were analysed. (M.C.K.) [pt

Microstructure and properties of multiphase sintered cermets Fe-Fe{sub 2}B; Mikrostruktura i wlasnosci spiekanych reakcyjnie cermetali Fe-Fe{sub 2}B

Energy Technology Data Exchange (ETDEWEB)

Nowacki, J. [Wydzial Inzynierii Materialowej, Politechnika Szczecinska, Szczecin (Poland); Klimek, L. [Instytut Inzynierii Materialowej i Technik Bezwiorowych, Politechnika Lodzka, Lodz (Poland)

1998-12-31

The process of multiphase sintering of iron in the vacuum has been analysed. As a result of the process iron-iron boride cermets have been produced. Fe-Fe{sub 2}B cermets were obtained as a result of sintering of the Fe and B pure elements in the vacuum. Attemps at sintering in the solid phase and with the participation of the liquid phase, the Fe-Fe{sub 2}B eutectic, have been made. Metallographic qualitative and quantitative studies, X-ray structural qualitative and qauantitative analysis allowed to determine the structure of Fe{sub 2}B cermets, as well as a description of the kinetics of quantitative changes in phase proportions in the course of sintering. It has been found that their structure varies widely depending on sintering parameters and the composition of the sinters. Measurements of the Fe-Fe{sub 2}B cermets hardness and measurements on wear during dry friction by the pin-on-disc method have shown distinct advantages of the cermets as a modern constructional materials. The hardness of Fe-Fe{sub 2}B cermets, depending on their chemical composition and sintering parameters, ranges widely from 150 to 1500 HV, and their resistance to wear is comparable to that of diffusively boronized steels. FeFe{sub 2}B cermets are a composite material in which iron boride, Fe{sub 2}B, with a hardness of about 1800 HV plays the role of the reinforcement,while iron-iron boride, Fe-Fe{sub 2}B, with a hardness of about 500 HV plays the role of matrix. The eutectic in the spaces between iron boride grains is composed of boron solid solution plates in iron with a hardness of arround 250 HV, and iron boride, Fe{sub 2}B, plates with a hardness of approximaly 1800 HV. The combination of such different materials, a hard reinforcement and a relatively plastic matrix produces favourable properties of the cermet thus produced high hardness (1500 HV) constant over whole cross section of the material, resistance of abrasive wear and acceptable ductility. The properties mentioned above

Modelling structure and properties of amorphous silicon boron nitride ceramics

Directory of Open Access Journals (Sweden)

Johann Christian Schön

2011-06-01

Full Text Available Silicon boron nitride is the parent compound of a new class of high-temperature stable amorphous ceramics constituted of silicon, boron, nitrogen, and carbon, featuring a set of properties that is without precedent, and represents a prototypical random network based on chemical bonds of predominantly covalent character. In contrast to many other amorphous materials of technological interest, a-Si3B3N7 is not produced via glass formation, i.e. by quenching from a melt, the reason being that the binary components, BN and Si3N4, melt incongruently under standard conditions. Neither has it been possible to employ sintering of μm-size powders consisting of binary nitrides BN and Si3N4. Instead, one employs the so-called sol-gel route starting from single component precursors such as TADB ((SiCl3NH(BCl2. In order to determine the atomic structure of this material, it has proven necessary to simulate the actual synthesis route.Many of the exciting properties of these ceramics are closely connected to the details of their amorphous structure. To clarify this structure, it is necessary to employ not only experimental probes on many length scales (X-ray, neutron- and electron scattering; complex NMR experiments; IR- and Raman scattering, but also theoretical approaches. These address the actual synthesis route to a-Si3B3N7, the structural properties, the elastic and vibrational properties, aging and coarsening behaviour, thermal conductivity and the metastable phase diagram both for a-Si3B3N7 and possible silicon boron nitride phases with compositions different from Si3N4: BN = 1 : 3. Here, we present a short comprehensive overview over the insights gained using molecular dynamics and Monte Carlo simulations to explore the energy landscape of a-Si3B3N7, model the actual synthesis route and compute static and transport properties of a-Si3BN7.

Moessbauer study of isothermally annealed amorphous Fe-Nb-Cu-Si-B alloys

International Nuclear Information System (INIS)

Sitek, J.; Toth, I.; Miglierini, M.

1993-01-01

Amorphous ribbons of Fe 73.5 Nb 3 Cu 1 Si 13.5 B 9 have been annealed above the crystallization temperature. Annealed samples consisted of crystalline and amorphous phases in a wide temperature range. Two samples of different thicknesses of 33 μm and 27 μm were isothermally annealed at a temperature of 545 C from 0.5 to 5 h in a vacuum furnace. The amount of crystalline phase increases rapidly in the ticker sample. The crystalline part of the Moessbauer spectrum consists of four sharp sextets which can be assigned to a DO 3 -structure FeSi alloy. After 700 C annealing the amorphous phase was not observed and the crystalline phase consisted of the DO 3 -structure FeSi alloy, paramagnetic FeNbB and presumably Fe 23 B 6 and Fe 3 SiB 2 . (orig.)

Moessbauer spectroscopy studies of spin reorientations in amorphous and crystalline (Co0.2Fe0.8)72.5Si12.5B15 glass coated micro-wires

International Nuclear Information System (INIS)

Nowik, I.; Felner, I.; Garcia-Miquel, H.

2007-01-01

Thermo-gravimetric, differential scanning calorimetry and comprehensive 57 Fe Moessbauer spectroscopy studies of amorphous and crystalline ferromagnetic glass coated (Co 0.2 Fe 0.8 ) 72.5 Si 12.5 B 15 micro-wires have been recorded. The Curie temperature of the amorphous phase is T C (amorp) ∼730 K. The analysis of the Moessbauer spectra reveals that below 623 K the easy axis of the magnetization is axial-along the wires, and that a tangential or/and radial orientation occurs at higher temperatures. At 770 K, in the first 4 hours the Moessbauer spectrum exhibits a pure paramagnetic doublet. Crystallization and decomposition to predominantly α-Fe(Si) and Fe 2 B occurs either by raising the temperature above 835 K or isothermally in time at lower temperatures. Annealing for a day at 770 K, leads to crystallization. In the crystalline material the magnetic moments have a complete random orientation. After cooling back to ambient temperature, both α-Fe(Si) and Fe 2 B in the glass coated wire show pure axial magnetic orientation like in the original amorphous state. The observed spin reorientations are associated with changes in the stress induced by the glass coating

In situ observation of self-propagating high temperature syntheses of Ta5Si3, Ti5Si3 and TiB2 by proton and X-ray radiography

Science.gov (United States)

Bernert, T.; Winkler, B.; Haussühl, E.; Trouw, F.; Vogel, S. C.; Hurd, A. J.; Smilowitz, L.; Henson, B. F.; Merrill, F. E.; Morris, C. L.; Mariam, F. G.; Saunders, A.; Juarez-Arellano, E. A.

2013-08-01

Self-propagating high temperature reactions of tantalum and titanium with silicon and titanium with boron were studied using proton and X-ray radiography, small-angle neutron scattering, neutron time-of-flight, X-ray and neutron diffraction, dilatometry and video recording. We show that radiography allows the observation of the propagation of the flame front in all investigated systems and the determination of the widths of the burning zones. X-ray and neutron diffraction showed that the reaction products consisted of ≈90 wt% of the main phase and one or two secondary phases. For the reaction 5Ti + 3Si → Ti5Si3 flame front velocities of 7.1(3)-34.2(4) mm/s were determined depending on the concentration of a retardant added to the starting material, the geometry and the green density of the samples. The flame front width was determined to be 1.17(4)-1.82(8) mm and depends exponentially on the flame front velocity. Similarly, for the reaction Ti + 2B → TiB2 flame front velocities of 15(2)-26.6(4) mm/s were determined, while for a 5Ta + 3Si → Ta5Si3 reaction the flame front velocity was 7.05(4) mm/s. The micro structure of the product phase Ta5Si3 shows no texture. From SANS measurements the dependence of the specific surface of the product phase on the particle sizes of the starting materials was studied.

Cluster-based bulk metallic glass formation in Fe-Si-B-Nb alloy systems

Energy Technology Data Exchange (ETDEWEB)

Zhu, C L; Wang, Q; Li, F W; Li, Y H; Wang, Y M; Dong, C [State Key Laboratory of Materials Modification, Dalian University of Technology (DUT), Dalian 116024 (China); Zhang, W; Inoue, A, E-mail: dong@dlut.edu.c [Institute for Materials Research (IMR), Tohoku University, Katahira 2-1-1, Aoba-Ku, Sendai 980-8577 (Japan)

2009-01-01

Bulk metallic glass formations have been explored in Fe-B-Si-Nb alloy system using the so-called atomic cluster line approach in combination with minor alloying guideline. The atomic cluster line refers to a straight line linking binary cluster to the third element in a ternary system. The basic ternary compositions in Fe-B-Si system are determined by the inetersection points of two cluster lines, namely Fe-B cluster to Si and Fe-Si cluster to B, and then further alloyed with 3-5 at. % Nb for enhancing glass forming abilities. BMG rods with a diameter of 3 mm are formed under the case of minor Nb alloying the basic intersecting compositions of Fe{sub 8}B{sub 3}-Si with Fe{sub 12}Si-B and Fe{sub 8}B{sub 2}-Si with Fe{sub 9}Si-B. The BMGs also exhibit high Vickers hardness (H{sub v}) of 1130-1164 and high Young's modulous (E) of 170-180 GPa

Boron solubility in Fe-Cr-B cast irons

International Nuclear Information System (INIS)

Guo Changqing; Kelly, P.M.

2003-01-01

Boron solubility in the as-cast and solution treated martensite of Fe-Cr-B cast irons, containing approximately 1.35 wt.% of boron, 12 wt.% of chromium, as well as other alloying elements, has been investigated using conventional microanalysis. The significant microstructural variations after tempering at 750 deg. C for 0.5-4 h, compared with the original as-cast and solution treated microstructures, indicated that the matrix consisted of boron and carbon supersaturated solid solutions. The boron solubility detected by electron microprobe was between 0.185-0.515 wt.% for the as-cast martensite and 0.015-0.0589 wt.% for the solution treated martensite, much higher than the accepted value of 0.005 wt.% in pure iron. These remarkable increases are thought to be associated with some metallic alloying element addition, such as chromium, vanadium and molybdenum, which have atomic diameters larger than iron, and expand the iron lattice to sufficiently allow boron atoms to occupy the interstitial sites in iron lattice

Moessbauer study of isothermally annealed amorphous Fe-Nb-Cu-Si-B alloys

Energy Technology Data Exchange (ETDEWEB)

Sitek, J. (Dept. of Nuclear Physics and Technology, Slovak Technical Univ., Bratislava (Slovakia)); Toth, I. (Dept. of Nuclear Physics and Technology, Slovak Technical Univ., Bratislava (Slovakia)); Miglierini, M. (Dept. of Nuclear Physics and Technology, Slovak Technical Univ., Bratislava (Slovakia))

1993-11-01

Amorphous ribbons of Fe[sub 73.5]Nb[sub 3]Cu[sub 1]Si[sub 13.5]B[sub 9] have been annealed above the crystallization temperature. Annealed samples consisted of crystalline and amorphous phases in a wide temperature range. Two samples of different thicknesses of 33 [mu]m and 27 [mu]m were isothermally annealed at a temperature of 545 C from 0.5 to 5 h in a vacuum furnace. The amount of crystalline phase increases rapidly in the ticker sample. The crystalline part of the Moessbauer spectrum consists of four sharp sextets which can be assigned to a DO[sub 3]-structure FeSi alloy. After 700 C annealing the amorphous phase was not observed and the crystalline phase consisted of the DO[sub 3]-structure FeSi alloy, paramagnetic FeNbB and presumably Fe[sub 23]B[sub 6] and Fe[sub 3]SiB[sub 2]. (orig.)

First principle investigations on Boron doped Fe2VAl Heusler alloy

International Nuclear Information System (INIS)

Venkatesh, Ch.; Srivastava, S.K.; Rao, V.V.

2014-01-01

The role of atomic size of sp-element is investigated through theoretical calculations and basic experiments to understand the physical properties of Boron doped Fe 2 VAl alloy. The results of ab-initio calculations on ordered L2 1 structure of Fe 2 VAl 1-x B x (x=0, 0.5, 1) alloys have been compared to understand the role of sp-element size on the hybridization among their respective valance states. Interestingly, semi-metallic and paramagnetic like ground states were found in the Boron doped alloys in similar to Fe 2 VAl, eliminating the role of size of the doppent sp-atom. These calculations result in hybridization where the covalent distribution of valance states among the atoms is responsible to produce a finite pseudo-gap at the Fermi level. The observed features could be explained on the basis of covalent theory of magnetism in which an amount of spectral weight transfer occurs in the DOS spectrum among the same spin orbitals, leading to symmetric distribution of bonding and anti-bonding states. However, the obtained experimental findings on Boron doped alloys are in contrast with these calculations, indicating that experimentally the alloy formation into an ideal L2 1 lattice does not happen while doping with Boron. Further, the micro structural analysis shows Boron segregation across the grain boundaries that may form magnetic inhomogeneities in the lattice of Boron doped Fe 2 VAl alloys which preferably cause these experimental anomalies

Effects of boron addition on the formation of MoSi2 by combustion synthesis mode

International Nuclear Information System (INIS)

Feng Peizhong; Wu Jie; Islam, S.H.; Liu Weisheng; Niu Jinan; Wang Xiaohong; Qiang Yinghuai

2010-01-01

The combustion synthesis behavior of Mo-Si-B powder was investigated. Test specimens with nominal compositions including MoSi 2 , Mo(Si 0.975 B 0.025 ) 2 , Mo(Si 0.95 B 0.05 ) 2 , Mo(Si 0.925 B 0.075 ) 2 and Mo(Si 0.9 B 0.1 ) 2 were employed. The combustion mode, propagation velocity of combustion wave, combustion temperature and combustion product structure were studied. The results showed that the combustion wave propagated along a spiral trajectory till reaching the bottom of the compacts. The combustion temperature was increased by the addition of boron, to as high as 1922 K in the case of the Mo(Si 0.95 B 0.05 ) 2 sample. However, the flame-front propagation velocity decreased as a result of the addition of boron. The X-ray diffraction results showed that the combustion products of the Mo(Si 0.975 B 0.025 ) 2 and Mo(Si 0.9 B 0.1 ) 2 samples were composed of MoSi 2 with minor MoB. Those of the Mo(Si 0.95 B 0.05 ) 2 and Mo(Si 0.925 B 0.075 ) 2 samples were composed of MoSi 2 with minor MoB and MoB 2 . And traces of Mo 2 B 5 were identified in the Mo(Si 0.95 B 0.05 ) 2 sample.

Characterisation of NdFeB thin films prepared on (100)Si substrates with SiO2 barrier layers

International Nuclear Information System (INIS)

Sood, D.K.; Muralidhar, G.K.

1998-01-01

This work presents a systematic study of the deposition and characterization of NdFeB films on substrates of Si(100) and of SiO2 layer thermally grown on Si(100) held at RT, 360 deg C or 440 deg C. The post-deposition annealing is performed at 600 or 800 deg C in vacuum. The films are characterised using the analytical techniques of RBS, SIMS, XRD, OM and SEM. Results indicate that SiO2 is, in deed, an excellent diffusion barrier layer till 600 deg C but becomes relatively less effective at 800 deg C. Without this barrier layer, interdiffusion at the Si-NdFeB film interface leads to formation of iron silicides, α-Fe and B exclusion from the diffusion zone, in competition with the formation of the magnetic NdFeB phase. (authors)

Microstructure and properties of multiphase sintered cermets Fe-Fe2B

International Nuclear Information System (INIS)

Nowacki, J.; Klimek, L.

1998-01-01

The process of multiphase sintering of iron in the vacuum has been analysed. As a result of the process iron-iron boride cermets have been produced. Fe-Fe 2 B cermets were obtained as a result of sintering of the Fe and B pure elements in the vacuum. Attemps at sintering in the solid phase and with the participation of the liquid phase, the Fe-Fe 2 B eutectic, have been made. Metallographic qualitative and quantitative studies, X-ray structural qualitative and qauantitative analysis allowed to determine the structure of Fe 2 B cermets, as well as a description of the kinetics of quantitative changes in phase proportions in the course of sintering. It has been found that their structure varies widely depending on sintering parameters and the composition of the sinters. Measurements of the Fe-Fe 2 B cermets hardness and measurements on wear during dry friction by the pin-on-disc method have shown distinct advantages of the cermets as a modern constructional materials. The hardness of Fe-Fe 2 B cermets, depending on their chemical composition and sintering parameters, ranges widely from 150 to 1500 HV, and their resistance to wear is comparable to that of diffusively boronized steels. FeFe 2 B cermets are a composite material in which iron boride, Fe 2 B, with a hardness of about 1800 HV plays the role of the reinforcement,while iron-iron boride, Fe-Fe 2 B, with a hardness of about 500 HV plays the role of matrix. The eutectic in the spaces between iron boride grains is composed of boron solid solution plates in iron with a hardness of arround 250 HV, and iron boride, Fe 2 B, plates with a hardness of approximaly 1800 HV. The combination of such different materials, a hard reinforcement and a relatively plastic matrix produces favourable properties of the cermet thus produced high hardness (1500 HV) constant over whole cross section of the material, resistance of abrasive wear and acceptable ductility. The properties mentioned above, resulting from the cermet

FTIR and electrical characterization of a-Si:H layers deposited by PECVD at different boron ratios

Energy Technology Data Exchange (ETDEWEB)

Orduna-Diaz, A., E-mail: abdu@susu.inaoep.mx [Instituto Nacional de Astrofisica, Optica y Electronica, Luis Enrique Erro No. 1, Tonantzintla, Puebla 72840 (Mexico); Trevino-Palacios, C.G. [Instituto Nacional de Astrofisica, Optica y Electronica, Luis Enrique Erro No. 1, Tonantzintla, Puebla 72840 (Mexico); Rojas-Lopez, M.; Delgado-Macuil, R.; Gayou, V.L. [Centro de Investigacion en Biotecnologia Aplicada (CIBA), IPN, Tlaxcala, Tlax. 72197 (Mexico); Torres-Jacome, A. [Instituto Nacional de Astrofisica, Optica y Electronica, Luis Enrique Erro No. 1, Tonantzintla, Puebla 72840 (Mexico)

2010-10-25

Hydrogenated amorphous silicon (a-Si:H) has found applications in flat panel displays, photovoltaic solar cell and recently has been employed in boron doped microbolometer array. We have performed electrical and structural characterizations of a-Si:H layers prepared by plasma enhanced chemical vapor deposition (PECVD) method at 540 K on glass substrates at different diborane (B{sub 2}H{sub 6}) flow ratios (500, 250, 150 and 50 sccm). Fourier transform infrared spectroscopy (FTIR) measurements obtained by specular reflectance sampling mode, show Si-Si, B-O, Si-H, and Si-O vibrational modes (611, 1300, 2100 and 1100 cm{sup -1} respectively) with different strengths which are associated to hydrogen and boron content. The current-voltage curves show that at 250 sccm flow of boron the material shows the lowest resistivity, but for the 150 sccm boron flow it is obtained the highest temperature coefficient of resistance (TCR).

Structure and magnetism of the Sm{sub 7.5}Y{sub 2.5}Fe{sub 90−x}Si{sub x} (x=0.0, 2.5, 5.0, 7.5 and 10) alloys

Energy Technology Data Exchange (ETDEWEB)

Yang, W.Y.; Zhao, H.; Lai, Y.F.; Du, H.L.; Liu, S.Q.; Wang, C.S.; Han, J.Z.; Yang, Y.C. [State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Yu, X.; Qi, Z.Q. [GanZhou Fortune Electronic Co. Ltd., Jiangxi (China); Yang, J.B. [State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

2017-03-15

Sm{sub 7.5}Y{sub 2.5}Fe{sub 90−x}Si{sub x} (x=0.0, 2.5, 5.0, 7.5 and 10) alloys have been prepared by arc melting method and equilibrium disordered Th{sub 2}Zn{sub 17}-type phases, (Sm,Y){sub 2−y}(Fe,Si){sub 17+2y}, with relative lower rare-earth content than the ordered Th{sub 2}Zn{sub 17}-type phase, have been obtained. Compared to the ordered Th{sub 2}Zn{sub 17}-type structure, the X-ray diffraction (XRD) intensity of the superstructure lines of the (Sm,Y){sub 2−y}(Fe,Si){sub 17+2y} decreases with the increase of the Si content and becomes zero for x=10. According to the refinement with the disordered Th{sub 2}Zn{sub 17}-type structure, the occupation rates of the R atoms at (3a) and (6c) sites tend to reach the same value with the increase of the Si content, and the lattice parameter a decreases while the lattice parameter c increases, leading to an increase of c/a. It was found that the atomic ratio of Fe(Si)/Sm(Y) in the disordered Th{sub 2}Zn{sub 17}-type structure increases with the increase of Si content and reaches a maximum value of 9.07 with x=10. The XRD diagrams of the magnetic aligned samples indicate that the easy magnetization direction (EMD) of the (Sm,Y){sub 2−y}(Fe,Si){sub 17+2y} is in the a-b plane, and the change of the EMD in a-b plane has also been observed due to the Si preferred site occupation. The remanence ratios along the easy direction are higher than that along hard direction; however, all the remanence ratios are less than 0.5. The magnetocrystalline anisotropy constant K increases first and then decreases with increasing the Si content. The Curie temperature of Sm{sub 7.5}Y{sub 2.5}Fe{sub 90−x}Si{sub x} alloys increases by about 65 K per Si. The saturation magnetization increases first and then decreases with a maximum of 135.5 emu/g observed for x=2.5 at room temperature. - Highlights: • Equilibrium disordered Th{sub 2}Zn{sub 17}-type phases (Sm,Y){sub 2-y}(Fe,Si){sub 17+2y} have been obtained. • The atomic ratio of

Stress impedance effects in flexible amorphous FeCoSiB magnetoelastic films

International Nuclear Information System (INIS)

Zhang Wanli; Peng Bin; Su Ding; Tang Rujun; Jiang Hongchuan

2008-01-01

Amorphous FeCoSiB films were deposited on the flexible polyimide substrates (Kapton type (VN)) by DC magnetron sputtering. Stress impedance (SI) effects of the flexible amorphous FeCoSiB magnetoelastic films were investigated in details. The results show that a large stress impedance effect can be observed in the flexible amorphous FeCoSiB magnetoelastic films. And the results also show a bias magnetic field plays an important role in the stress impedance of FeCoSiB films. Applied a bias magnetic field during depositing can induce obvious in-plane anisotropy in the FeCoSiB films, and a larger SI effect can be obtained with a stronger anisotropy in FeCoSiB films. Argon pressure has a significant effect on the SI effect of the FeCoSiB films. The SI of the FeCoSiB films reaches a maximum of 7.6% at argon pressure of 1.5 Pa, which can be explained by the change of residual stress in FeCoSiB films

Fabrication of an Fe80.5Si7.5B6Nb5Cu Amorphous-Nanocrystalline Powder Core with Outstanding Soft Magnetic Properties

Science.gov (United States)

Zhang, Zongyang; Liu, Xiansong; Feng, Shuangjiu; Rehman, Khalid Mehmood Ur

2018-03-01

In this study, the melt spinning method was used to develop Fe80.5Si7.5B6Nb5Cu amorphous ribbons in the first step. Then, the Fe80.5Si7.5B6Nb5Cu amorphous-nanocrystalline core with a compact microstructure was obtained by multiple processes. The main properties of the magnetic powder core, such as micromorphology, thermal behavior, permeability, power loss and quality factor, have been analyzed. The obtained results show that an Fe80.5Si7.5B6Nb5Cu amorphous-nanocrystalline duplex core has high permeability (54.8-57), is relatively stable at different frequencies and magnetic fields, and the maximum power loss is only 313 W/kg; furthermore, it has a good quality factor.

Si-FeSi2/C nanocomposite anode materials produced by two-stage high-energy mechanical milling

Science.gov (United States)

Yang, Yun Mo; Loka, Chadrasekhar; Kim, Dong Phil; Joo, Sin Yong; Moon, Sung Whan; Choi, Yi Sik; Park, Jung Han; Lee, Kee-Sun

2017-05-01

High capacity retention Silicon-based nanocomposite anode materials have been extensively explored for use in lithium-ion rechargeable batteries. Here we report the preparation of Si-FeSi2/C nanocomposite through scalable a two-stage high-energy mechanical milling process, in which nano-scale Si-FeSi2 powders are besieged by the carbon (graphite/amorphous phase) layer; and investigation of their structure, morphology and electrochemical performance. Raman analysis revealed that the carbon layer structure comprised of graphitic and amorphous phase rather than a single amorphous phase. Anodes fabricated with the Si-FeSi2/C showed excellent electrochemical behavior such as a first discharge capacity of 1082 mAh g-1 and a high capacity retention until the 30th cycle. A remarkable coulombic efficiency of 99.5% was achieved within a few cycles. Differential capacity plots of the Si-FeSi2/C anodes revealed a stable lithium reaction with Si for lithiation/delithiation. The enhanced electrochemical properties of the Si-FeSi2/C nanocomposite are mainly attributed to the nano-size Si and stable solid electrolyte interface formation and highly conductive path driven by the carbon layer.

Influence of the chemical composition of rapidly quenched amorphous alloys (Ni, Fe, Cr)-B-Si on its crystallization process

Science.gov (United States)

Elmanov, G.; Dzhumaev, P.; Ivanitskaya, E.; Skrytnyi, V.; Ruslanov, A.

2016-04-01

This paper presents results of research of the structure and phase transformations during the multistage crystallization of the metallic glasses with the compositions Ni71,5Cr6,8Fe2,7B11,9Si7,1 and Ni63,4Cr7,4Fe4,3Mn0,8B15,6Si8,5 labeled as AWS BNi-2 according to American Welding Society. Differential scanning calorimetry (DSC), X-ray diffraction analysis (XRD), scanning electron microscopy (SEM) and energy-dispersive X-ray microanalysis (EDX) were used as experimental research methods. The influence of the alloys chemical composition (boron, manganese and iron) on the temperatures and the exothermic heat effects of phase transformations, as well as on the phase composition of alloys at three stages of crystallization was analyzed. We present a thermodynamic explanation of the observed heat effects. It has been shown that manganese has the main influence on the phase transformations temperatures and heat effects in these two alloys. It is also assumed that at the final crystallization stage simultaneously with the formation of phases Ni3B and β1-Ni3Si should occur the nucleation of borides of CrB type with high Cr and low Si content.

Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure

KAUST Repository

Zhang, Y.

2016-07-20

Current-perpendicular-to-plane electronic transport properties and magnetoresistance of amorphous Co40Fe40B20/SiO2/Si heterostructures are investigated systematically. A backward diode-like rectifying behavior was observed due to the formation of a Schottky barrier between Co40Fe40B20 and Si. The junction resistance shows a metal-insulator transition with decreasing temperature in both the forward and reverse ranges. A large positive magnetoresistance (MR) of ∼2300% appears at 200 K. The positive MR can be attributed to the magnetic-field-controlled impact ionization process of carriers. MR shows a temperature-peak-type character under a constant bias current, which is related to the spin-dependent barrier in the Si near the interface. © CopyrightEPLA, 2016.

Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure

KAUST Repository

Zhang, Y.; Mi, W. B.; Zhang, Xixiang

2016-01-01

Current-perpendicular-to-plane electronic transport properties and magnetoresistance of amorphous Co40Fe40B20/SiO2/Si heterostructures are investigated systematically. A backward diode-like rectifying behavior was observed due to the formation of a Schottky barrier between Co40Fe40B20 and Si. The junction resistance shows a metal-insulator transition with decreasing temperature in both the forward and reverse ranges. A large positive magnetoresistance (MR) of ∼2300% appears at 200 K. The positive MR can be attributed to the magnetic-field-controlled impact ionization process of carriers. MR shows a temperature-peak-type character under a constant bias current, which is related to the spin-dependent barrier in the Si near the interface. © CopyrightEPLA, 2016.

Ultra-soft magnetic Co-Fe-B-Si-Nb amorphous alloys for high frequency power applications

Science.gov (United States)

Ackland, Karl; Masood, Ansar; Kulkarni, Santosh; Stamenov, Plamen

2018-05-01

With the continuous shrinkage of the footprint of inductors and transformers in modern power supplies, higher flux, while still low-loss metallic replacements of traditional ferrite materials are becoming an intriguing alternative. One candidate replacement strategy is based on amorphous CoFeBSi soft-magnetic alloys, in their metallic glass form. Here the structural and magnetic properties of two different families of CoFeBSi-based soft magnetic alloys, prepared by arc-melting and subsequent melt spinning (rapid quenching) are presented, targeting potential applications at effective frequencies of 100 kHz and beyond. The nominal alloy compositions are Co67Fe4B11Si16Mo2 representing commercial Vitrovac and Co72-xFexB28-y (where B includes non-magnetic elements such as Boron, Silicon etc. x varies between 4 and 5 % and y is varied from 0 to 2 %) denoted Alloy #1 and prepared as a possible higher performance alternative, i.e. lower power loss and lower coercivity, to commercial Vitrovac. Room temperature magnetization measurements of the arc-melted alloys reveal that compared to Vitrovac, Alloy #1 already presents a ten-fold decrease in coercivity, with Hc ˜ 1.4 Am-1 and highest figure of merit of (Ms/Hc > 96). Upon melt-spinning the alloys into thin (< 30 μm) ribbons, the alloys are essentially amorphous when analyzed by XRD. Magnetization measurements of the melt-spun ribbons demonstrate that Alloy #1 possesses a coercivity of just 2 Am-1, which represents a significant improvement compared to melt-spun ribbons of Vitrovac (17 Am-1). A set of prototype transformers of approximately 10 turns of Alloy #1 ribbon exhibits systematically Hc < 10 Am-1 at 100 kHz, without a noticeable decrease in coupled flux and saturation.

Behaviour of Fe4O5-Mg2Fe2O5 solid solutions and their relation to coexisting Mg-Fe silicates and oxide phases

Science.gov (United States)

Uenver-Thiele, Laura; Woodland, Alan B.; Miyajima, Nobuyoshi; Ballaran, Tiziana Boffa; Frost, Daniel J.

2018-03-01

Experiments at high pressures and temperatures were carried out (1) to investigate the crystal-chemical behaviour of Fe4O5-Mg2Fe2O5 solid solutions and (2) to explore the phase relations involving (Mg,Fe)2Fe2O5 (denoted as O5-phase) and Mg-Fe silicates. Multi-anvil experiments were performed at 11-20 GPa and 1100-1600 °C using different starting compositions including two that were Si-bearing. In Si-free experiments the O5-phase coexists with Fe2O3, hp-(Mg,Fe)Fe2O4, (Mg,Fe)3Fe4O9 or an unquenchable phase of different stoichiometry. Si-bearing experiments yielded phase assemblages consisting of the O5-phase together with olivine, wadsleyite or ringwoodite, majoritic garnet or Fe3+-bearing phase B. However, (Mg,Fe)2Fe2O5 does not incorporate Si. Electron microprobe analyses revealed that phase B incorporates significant amounts of Fe2+ and Fe3+ (at least 1.0 cations Fe per formula unit). Fe-L2,3-edge energy-loss near-edge structure spectra confirm the presence of ferric iron [Fe3+/Fetot = 0.41(4)] and indicate substitution according to the following charge-balanced exchange: [4]Si4+ + [6]Mg2+ = 2Fe3+. The ability to accommodate Fe2+ and Fe3+ makes this potential "water-storing" mineral interesting since such substitutions should enlarge its stability field. The thermodynamic properties of Mg2Fe2O5 have been refined, yielding H°1bar,298 = - 1981.5 kJ mol- 1. Solid solution is complete across the Fe4O5-Mg2Fe2O5 binary. Molar volume decreases essentially linearly with increasing Mg content, consistent with ideal mixing behaviour. The partitioning of Mg and Fe2+ with silicates indicates that (Mg,Fe)2Fe2O5 has a strong preference for Fe2+. Modelling of partitioning with olivine is consistent with the O5-phase exhibiting ideal mixing behaviour. Mg-Fe2+ partitioning between (Mg,Fe)2Fe2O5 and ringwoodite or wadsleyite is influenced by the presence of Fe3+ and OH incorporation in the silicate phases.

Report on achievements in fiscal 1998. Development of silicon manufacturing process to rationalize energy usage (Development of mass production technology for solar-grade silicon); 1998 nendo energy shiyo gorika silicon seizo process kaihatsu seika hokokusho. Taiyo denchiyo silicon ryosanka seizo gijutsu no kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1999-03-01

In the proliferation stage of solar cells, a technology is required to manufacture low-cost SOG-Si that can handle small quantity production. Development is being made on a manufacturing technology using high purity metallic silicon (99.5%) as the raw material. Considering that the subject impurities are P, B and metallic impurities (Fe, Ti and Al), a manufacturing method consisting of the following processes is being developed: metallic silicon/phosphorus removal, solidification and rough refining/boron removal, solidification and fine refining. Discussions are being advanced on phosphorus removal by using a large electron beam fusion equipment, and at the same time, the discussions are supported by fabricating and installing a large equipment intended of removing boron and the metallic impurities. Boron is removed by oxidizing it with steam. Therefore, the basic mechanism of the equipment is to spray argon plasma added with steam onto the molten silicon surface. In boron removal, diffusion of boron onto the reaction interface in the primary reaction determines the rate. A boron removal rate for B/10 to 0.1 ppm of 45 kg/h as maximum was achieved. The derived silicon has met the requirement. (NEDO)

Moessbauer-spectroscopic study of structure and magnetism of the exchange-coupled layer systems Fe/FeSn{sub 2}, and Fe/FeSi/Si and the ion-implanted diluted magnetic semiconductor SiC(Fe); Moessbauerspektroskopische Untersuchung von Struktur und Magnetismus der austauschgekoppelten Schichtsysteme Fe/FeSn{sub 2} und Fe/FeSi/Si und des ionenimplantierten verduennten magnetischen Halbleiters SiC(Fe)

Energy Technology Data Exchange (ETDEWEB)

Stromberg, Frank

2009-07-07

In line with this work the structural and magnetic properties of the exchange coupled layered systems Fe/FeSn{sub 2} and Fe/FeSi/Si and of the Fe ion implanted diluted magnetic semiconductor (DMS) SiC(Fe) were investigated. The main measuring method was the isotope selective {sup 57}Fe conversion electron Moessbauer spectroscopy (CEMS), mostly in connection with the {sup 57}Fe tracer layer technique, in a temperature range from 4.2 K to 340 K. Further measurement techniques were X-ray diffraction (XRD), electron diffraction (LEED, RHEED), SQUID magnetometry and FMR (Ferromagnetic Resonance). In the first part of this work the properties of thin AF FeSn{sub 2}(001) films and of the exchange-bias system Fe/FeSn{sub 2}(001) on InSb(001) were investigated. With the application of {sup 57}Fe-tracer layers and CEMS both the Fe-spin structure and the temperature dependence of the magnetic hyperfine field (B{sub hf}) of FeSn{sub 2} could be examined. The evaporation of Fe films on the FeSn{sub 2} films produced in the latter ones a high perpendicular spin component at the Fe/FeSn{sub 2} interface. In some distance from the interface the Fe spins rotate back into the sample plane. Furthermore {sup 57}Fe-CEMS provided a correlation between the absolute value of the exchange field vertical stroke He vertical stroke and the amount of magnetic defects within the FeSn{sub 2}. Temperature dependent CEMS-measurements yielded informations about the spin dynamics within the AF. The transition temperatures T{sub B}{sup *}, which were interpreted as superparamagnetic blocking temperatures, obtain higher values compared to the temperatures T{sub B} of the exchange-bias effect, obtained with magnetometry measurements. The second part of this work deals with the indirect exchange coupling within Fe/FeSi/Si/FeSi/Fe multilayers and FeSi diffusion barriers. The goal was to achieve Fe free Si interlayers. The CEMS results show that starting from a thickness of t{sub FeSi}=10-12 A of the

UV Light-Driven Photodegradation of Methylene Blue by Using Mn0.5Zn0.5Fe2O4/SiO2 Nanocomposites

Science.gov (United States)

Indrayana, I. P. T.; Julian, T.; Suharyadi, E.

2018-04-01

The photodegradation activity of nanocomposites for 20 ppm methylene blue solution has been investigated in this work. Nanocomposites Mn0.5Zn0.5Fe2O4/SiO2 have been synthesized using coprecipitation method. The X-ray diffraction (XRD) pattern confirmed the formation of three phases in sample Mn0.5Zn0.5Fe2O4/SiO2 i.e., Mn0.5Zn0.5Fe2O4, Zn(OH)2, and SiO2. The appearance of SiO2 phase showed that the encapsulation process has been carried out. The calculated particles size of Mn0.5Zn0.5Fe2O4/SiO2 is greater than Mn0.5Zn0.5Fe2O4. Bonding analysis via vibrational spectra for Mn0.5Zn0.5Fe2O4/SiO2 confirmed the formation of bonds Me-O-Si stretching (2854.65 cm-1) and Si-O-Si asymmetric stretching (1026.13 cm-1). The optical gap energy of Mn0.5Zn0.5Fe2O4/SiO2 was smaller (2.70 eV) than Mn0.5Zn0.5Fe2O4 (3.04 eV) due to smaller lattice dislocation and microstrain that affect their electronic structure. The Mn0.5Zn0.5Fe2O4/SiO2 showed high photodegradation ability due to smaller optical gap energy and the appearance of SiO2 ligand that can easily attract dye molecules. The Mn0.5Zn0.5Fe2O4/SiO2 also showed high degradation activity even without UV light radiation. The result showed that photodegradation reaction doesn’t follow pseudo-first order kinetics.

Superconductivity in heavily boron-doped silicon carbide

Directory of Open Access Journals (Sweden)

Markus Kriener, Takahiro Muranaka, Junya Kato, Zhi-An Ren, Jun Akimitsu and Yoshiteru Maeno

2008-01-01

Full Text Available The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped silicon carbide. The sample used for that study consisted of cubic and hexagonal SiC phase fractions and hence this led to the question which of them participated in the superconductivity. Here we studied a hexagonal SiC sample, free from cubic SiC phase by means of x-ray diffraction, resistivity, and ac susceptibility.

Fabrication of NdFeB microstructures using a silicon molding technique for NdFeB/Ta multilayered films and NdFeB magnetic powder

International Nuclear Information System (INIS)

Jiang Yonggang; Fujita, Takayuki; Uehara, Minoru; Iga, Yuki; Hashimoto, Taichi; Hao, Xiuchun; Higuchi, Kohei; Maenaka, Kazusuke

2011-01-01

The silicon molding technique is described for patterning of NdFeB/Ta multilayered magnetic films and NdFeB magnetic powder at the micron scale. Silicon trenches are seamlessly filled by 12-μm-thick NdFeB/Ta multilayered magnetic films with a magnetic retentivity of 1.3 T. The topography image and magnetic field distribution image are measured using an atomic force microscope and a magnetic force microscope, respectively. Using a silicon molding technique complemented by a lift-off process, NdFeB magnetic powder is utilized to fabricate magnetic microstructures. Silicon trenches as narrow as 20 μm are filled by a mixture of magnetic powder and wax powder. The B-H hysteresis loop of the patterned magnetic powder is characterized using a vibrating sample magnetometer, which shows a magnetic retentivity of approximately 0.37 T. - Highlights: → We demonstrate the fabrication of micro-magnets using silicon molding processes. → NdFeB/Ta films are well filled in silicon trenches with a thickness of 12 μm. → The 12-μm-thick NdFeB/Ta magnetic film shows a retentivity of 1.3 T. → Magnetic structures as narrow as 20 μm are fabricated using NdFeB magnetic powder. → VSM measurement shows a retentivity of 0.37 T for patterned NdFeB magnetic powder.

Fabrication of NdFeB microstructures using a silicon molding technique for NdFeB/Ta multilayered films and NdFeB magnetic powder

Energy Technology Data Exchange (ETDEWEB)

Jiang Yonggang, E-mail: yonggangj@gmail.com [School of Mechanical Engineering and Automation, Beihang University, Xueyuan Road No. 37, Haidian District, Beijing 100191 (China); Maenaka Human-Sensing Fusion project, Japan Science and Technology Agency, 2167 Shosha, Himeji, Hyogo 671-2280 (Japan); Fujita, Takayuki [Maenaka Human-Sensing Fusion project, Japan Science and Technology Agency, 2167 Shosha, Himeji, Hyogo 671-2280 (Japan); Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280 (Japan); Uehara, Minoru [NEOMAX Co. Ltd., 2-15-17, Egawa, Shimamoto-Cho, Mishima-gun, Osaka 618-0013 (Japan); Iga, Yuki [Maenaka Human-Sensing Fusion project, Japan Science and Technology Agency, 2167 Shosha, Himeji, Hyogo 671-2280 (Japan); Hashimoto, Taichi [Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280 (Japan); Hao, Xiuchun; Higuchi, Kohei [Maenaka Human-Sensing Fusion project, Japan Science and Technology Agency, 2167 Shosha, Himeji, Hyogo 671-2280 (Japan); Maenaka, Kazusuke [Maenaka Human-Sensing Fusion project, Japan Science and Technology Agency, 2167 Shosha, Himeji, Hyogo 671-2280 (Japan); Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280 (Japan)

2011-11-15

The silicon molding technique is described for patterning of NdFeB/Ta multilayered magnetic films and NdFeB magnetic powder at the micron scale. Silicon trenches are seamlessly filled by 12-{mu}m-thick NdFeB/Ta multilayered magnetic films with a magnetic retentivity of 1.3 T. The topography image and magnetic field distribution image are measured using an atomic force microscope and a magnetic force microscope, respectively. Using a silicon molding technique complemented by a lift-off process, NdFeB magnetic powder is utilized to fabricate magnetic microstructures. Silicon trenches as narrow as 20 {mu}m are filled by a mixture of magnetic powder and wax powder. The B-H hysteresis loop of the patterned magnetic powder is characterized using a vibrating sample magnetometer, which shows a magnetic retentivity of approximately 0.37 T. - Highlights: > We demonstrate the fabrication of micro-magnets using silicon molding processes. > NdFeB/Ta films are well filled in silicon trenches with a thickness of 12 {mu}m. > The 12-{mu}m-thick NdFeB/Ta magnetic film shows a retentivity of 1.3 T. > Magnetic structures as narrow as 20 {mu}m are fabricated using NdFeB magnetic powder. > VSM measurement shows a retentivity of 0.37 T for patterned NdFeB magnetic powder.

75 MeV boron ion irradiation studies on Si PIN photodiodes

Energy Technology Data Exchange (ETDEWEB)

Prabhakara Rao, Y.P.; Praveen, K.C. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India); Rejeena Rani, Y. [Integrated Circuits Division, Bharat Electronics Limited, Bangalore 560013, Karnataka (India); Tripathi, Ambuj [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Gnana Prakash, A.P., E-mail: gnanap@hotmail.com [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India)

2013-12-01

The highly sensitive silicon PIN photodiodes were fabricated to use in radiation environments. The Si PIN photodiodes are coated with 150 nm silicon dioxide (SiO{sub 2}) as anti-reflective (AR) coating. The presence of AR coating on the performance of irradiated PIN photodiodes is studied up to a total dose of 10 Mrad. The effects of 75 MeV boron (B{sup 5+}) ions and {sup 60}Co gamma radiation on the I–V, C–V and spectral responses of PIN photodiodes were studied systematically to understand the radiation tolerance of the devices. The 75 MeV B{sup 5+} irradiation results are compared with {sup 60}Co gamma irradiated results in the same dose range for 1 mm × 1 mm and 10 mm × 10 mm active area PIN photodiodes. The irradiation results show that the ion irradiated PIN photodiodes show more degradation when compared {sup 60}Co gamma irradiated devices. The irradiation results are presented in this paper and the possible mechanism behind the degradation of photodiodes is also discussed in the paper.

The Effects of a High Magnetic Field on the Annealing of [(Fe0.5Co0.50.75B0.2Si0.05]96Nb4 Bulk Metallic Glass

Directory of Open Access Journals (Sweden)

Peng Jia

2016-11-01

Full Text Available In contrast with amorphous alloys, nanocrystalline soft magnetic materials show improved thermal stability and higher soft magnetic properties. The nanocrystalline soft magnetic composites are usually fabricated by partially crystallizing from parent amorphous alloys. This paper reports our experimental observation on the sequence of crystallization in metallic glass under a high magnetic field (HMF. An application of a HMF to bulk metallic glass (BMG of [(Fe0.5Co0.50.75B0.2Si0.05]96Nb4 prioritizes the precipitation of α-(Fe,Co phase separated from the subsequent precipitation of borides, (Fe,Co23B6, upon isothermal annealing at a glass transition temperature. Furthermore, it was observed that, through the annealing treatment under a HMF, a soft magnetic nanocomposite, in which only α-(Fe,Co phase uniformly distributes in amorphous matrix, was achieved for boron-bearing BMG. The promotion of the α-Fe or (Fe,Co phase and the prevention of the boride phases during the isothermal annealing process help to produce high-quality soft magnetic nanocomposite materials. The mechanism by which a HMF influences the crystallization sequence was interpreted via certain changes in Gibbs free energies for two ferromagnetic phases. This finding evidences that the annealing treatment under a HMF is suitable for enhancing the soft magnetic properties of high B content (Fe,Co-based bulk amorphous and nanocrystalline materials.

Formation of shallow boron emitters in crystalline silicon using flash lamp annealing: Role of excess silicon interstitials

Energy Technology Data Exchange (ETDEWEB)

Riise, Heine Nygard, E-mail: h.n.riise@fys.uio.no; Azarov, Alexander; Svensson, Bengt G.; Monakhov, Edouard [Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P. O. Box 1048 Blindern, N-0316 Oslo (Norway); Schumann, Thomas; Hübner, Renè; Skorupa, Wolfgang [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P. O. Box 510119, 01314 Dresden (Germany)

2015-07-13

Shallow, Boron (B)-doped p{sup +} emitters have been realized using spin-on deposition and Flash Lamp Annealing (FLA) to diffuse B into monocrystalline float zone Silicon (Si). The emitters extend between 50 and 140 nm in depth below the surface, have peak concentrations between 9 × 10{sup 19 }cm{sup –3} and 3 × 10{sup 20 }cm{sup –3}, and exhibit sheet resistances between 70 and 3000 Ω/□. An exceptionally large increase in B diffusion occurs for FLA energy densities exceeding ∼93 J/cm{sup 2} irrespective of 10 or 20 ms pulse duration. The effect is attributed to enhanced diffusion of B caused by Si interstitial injection following a thermally activated reaction between the spin-on diffusant film and the silicon wafer.

Release of Si from Silicon, a Ferrosilicon (FeSi) Alloy and a Synthetic Silicate Mineral in Simulated Biological Media

Science.gov (United States)

Herting, Gunilla; Jiang, Tao; Sjöstedt, Carin; Odnevall Wallinder, Inger

2014-01-01

Unique quantitative bioaccessibility data has been generated, and the influence of surface/material and test media characteristics on the elemental release process were assessed for silicon containing materials in specific synthetic body fluids at certain time periods at a fixed loading. The metal release test protocol, elaborated by the KTH team, has previously been used for classification, ranking, and screening of different alloys and metals. Time resolved elemental release of Si, Fe and Al from particles, sized less than 50 µm, of two grades of metallurgical silicon (high purity silicon, SiHG, low purity silicon, SiLG), an alloy (ferrosilicon, FeSi) and a mineral (aluminium silicate, AlSi) has been investigated in synthetic body fluids of varying pH, composition and complexation capacity, simple models of for example dermal contact and digestion scenarios. Individual methods for analysis of released Si (as silicic acid, Si(OH)4) in synthetic body fluids using GF-AAS were developed for each fluid including optimisation of solution pH and graphite furnace parameters. The release of Si from the two metallurgical silicon grades was strongly dependent on both pH and media composition with the highest release in pH neutral media. No similar effect was observed for the FeSi alloy or the aluminium silicate mineral. Surface adsorption of phosphate and lactic acid were believed to hinder the release of Si whereas the presence of citric acid enhanced the release as a result of surface complexation. An increased presence of Al and Fe in the material (low purity metalloid, alloy or mineral) resulted in a reduced release of Si in pH neutral media. The release of Si was enhanced for all materials with Al at their outermost surface in acetic media. PMID:25225879

Release of Si from silicon, a ferrosilicon (FeSi alloy and a synthetic silicate mineral in simulated biological media.

Directory of Open Access Journals (Sweden)

Gunilla Herting

Full Text Available Unique quantitative bioaccessibility data has been generated, and the influence of surface/material and test media characteristics on the elemental release process were assessed for silicon containing materials in specific synthetic body fluids at certain time periods at a fixed loading. The metal release test protocol, elaborated by the KTH team, has previously been used for classification, ranking, and screening of different alloys and metals. Time resolved elemental release of Si, Fe and Al from particles, sized less than 50 µm, of two grades of metallurgical silicon (high purity silicon, SiHG, low purity silicon, SiLG, an alloy (ferrosilicon, FeSi and a mineral (aluminium silicate, AlSi has been investigated in synthetic body fluids of varying pH, composition and complexation capacity, simple models of for example dermal contact and digestion scenarios. Individual methods for analysis of released Si (as silicic acid, Si(OH4 in synthetic body fluids using GF-AAS were developed for each fluid including optimisation of solution pH and graphite furnace parameters. The release of Si from the two metallurgical silicon grades was strongly dependent on both pH and media composition with the highest release in pH neutral media. No similar effect was observed for the FeSi alloy or the aluminium silicate mineral. Surface adsorption of phosphate and lactic acid were believed to hinder the release of Si whereas the presence of citric acid enhanced the release as a result of surface complexation. An increased presence of Al and Fe in the material (low purity metalloid, alloy or mineral resulted in a reduced release of Si in pH neutral media. The release of Si was enhanced for all materials with Al at their outermost surface in acetic media.

Atomic layer deposition of boron-containing films using B{sub 2}F{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Mane, Anil U., E-mail: amane@anl.gov; Elam, Jeffrey W. [Argonne National Laboratory, Argonne, Illinois 60126 (United States); Goldberg, Alexander; Halls, Mathew D. [Schrödinger, Inc., San Diego, California 92122 (United States); Seidel, Thomas E. [Seitek50, Palm Coast, Florida 32135 (United States); Current, Michael I. [Current Scientific, San Jose, California 95124 (United States); Despres, Joseph; Byl, Oleg; Tang, Ying; Sweeney, Joseph [Entegris, Danbury, Connecticut 06810 (United States)

2016-01-15

Ultrathin and conformal boron-containing atomic layer deposition (ALD) films could be used as a shallow dopant source for advanced transistor structures in microelectronics manufacturing. With this application in mind, diboron tetrafluoride (B{sub 2}F{sub 4}) was explored as an ALD precursor for the deposition of boron containing films. Density functional theory simulations for nucleation on silicon (100) surfaces indicated better reactivity of B{sub 2}F{sub 4} in comparison to BF{sub 3}. Quartz crystal microbalance experiments exhibited growth using either B{sub 2}F{sub 4}-H{sub 2}O for B{sub 2}O{sub 3} ALD, or B{sub 2}F{sub 4}-disilane (Si{sub 2}H{sub 6}) for B ALD, but in both cases, the initial growth per cycle was quite low (≤0.2 Å/cycle) and decreased to near zero growth after 8–30 ALD cycles. However, alternating between B{sub 2}F{sub 4}-H{sub 2}O and trimethyl aluminum (TMA)-H{sub 2}O ALD cycles resulted in sustained growth at ∼0.65 Å/cycle, suggesting that the dense –OH surface termination produced by the TMA-H{sub 2}O combination enhances the uptake of B{sub 2}F{sub 4} precursor. The resultant boron containing films were analyzed for composition by x-ray photoelectron spectroscopy, and capacitance measurements indicated an insulating characteristic. Finally, diffused boron profiles less than 100 Å were obtained after rapid thermal anneal of the boron containing ALD film.

Surface PIXE analysis of phosphorus in a thin SiO2 (P, B) CVD layer deposited onto Si substrate

International Nuclear Information System (INIS)

Roumie, M.; Nsouli, B.

2001-01-01

Phosphorus determination, at level of percent, in Si matrix is not an easy analytical task. The analyzed materials arc Borophosphosilicate glass which are an important component of silicon based semiconductor technology. It's a thin SiO2 layer (400 nm) doped with boron and phosphorus using, in general, CVD (Chemical Vapor Deposition) process, in order to improve its plasticity, and deposited onto Si substrate. Therefore, the mechanical behaviour of the CVD SiO2 (P, B) layer is very sensitive to the phosphorus concentration. In this work we explore the capability of FIXE (Particle Induced X-ray Emission) to monitor a rapid and accurate quantification of P which is usually very low in such materials (few percent of the thin CVD layer deposited onto a silicon substrate). A systematic study is undertaken using Proton (0.5-3 MeV energy) and helium (1-3 MeV energy) beams, different thickness of X-ray absorber (131 and 146 μm of Kapton filter) and different tilting angles (0,45,60 and 80 deg.). The optimized measurement conditions should improve the P signal detection comparing to the Si and Background ones

Perpendicular magnetic anisotropy in Co2FeAl0.5Si0.5/MgO bottom electrodes for magnetic tunnel junctions

International Nuclear Information System (INIS)

Li, X.Q.; Wu, Y.; Gao, S.; Xu, X.G.; Miao, J.; Jiang, Y.

2013-01-01

Perpendicular magnetic anisotropy (PMA) was achieved in annealed Co 2 FeAl 0.5 Si 0.5 (CFAS)/MgO-based multilayers with good thermal stability up to 400 °C and a large anisotropy energy density K u over 2.0 × 10 5 J/m 3 . The thickness of the full-Heusler CFAS film to maintain PMA is up to 4.8 nm in which the co-existence of disordered A2, ordered B2 and fully ordered L2 1 structures is observed. X-ray photoelectron spectroscopy analysis demonstrates that the origin of the PMA is the hybridization between Co 3d and O 2p orbitals at the CFAS/MgO interface. - Highlights: • We achieved perpendicular magnetic anisotropy (PMA) in Co 2 FeAl 0.5 Si 0.5 (4.8 nm) film; • L2 1 , B2 and A2 phases coexist in perpendicular magnetic anisotropic Co 2 FeAl 0.5 Si 0.5 ; • Magnetic properties have strong dependence on the annealing temperature; • The PMA is induced by the hybridization between Co-3d and O-2p orbitals

Thermodynamic analysis of binary Fe{sub 85}B{sub 15} to quinary Fe{sub 85}Si{sub 2}B{sub 8}P{sub 4}Cu{sub 1} alloys for primary crystallizations of α-Fe in nanocrystalline soft magnetic alloys

Energy Technology Data Exchange (ETDEWEB)

Takeuchi, A., E-mail: takeuchi@imr.tohoku.ac.jp; Zhang, Y.; Takenaka, K.; Makino, A. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)

2015-05-07

Fe-based Fe{sub 85}B{sub 15}, Fe{sub 84}B{sub 15}Cu{sub 1}, Fe{sub 82}Si{sub 2}B{sub 15}Cu{sub 1}, Fe{sub 85}Si{sub 2}B{sub 12}Cu{sub 1}, and Fe{sub 85}Si{sub 2}B{sub 8}P{sub 4}Cu{sub 1} (NANOMET{sup ®}) alloys were experimental and computational analyzed to clarify the features of NANOMET that exhibits high saturation magnetic flux density (B{sub s}) nearly 1.9 T and low core loss than conventional nanocrystalline soft magnetic alloys. The X-ray diffraction analysis for ribbon specimens produced experimentally by melt spinning from melts revealed that the samples were almost formed into an amorphous single phase. Then, the as-quenched samples were analyzed with differential scanning calorimeter (DSC) experimentally for exothermic enthalpies of the primary and secondary crystallizations (ΔH{sub x1} and ΔH{sub x2}) and their crystallization temperatures (T{sub x1} and T{sub x2}), respectively. The ratio ΔH{sub x1}/ΔH{sub x2} measured by DSC experimentally tended to be extremely high for the Fe{sub 85}Si{sub 2}B{sub 8}P{sub 4}Cu{sub 1} alloy, and this tendency was reproduced by the analysis with commercial software, Thermo-Calc, with database for Fe-based alloys, TCFE7 for Gibbs free energy (G) assessments. The calculations exhibit that a volume fraction (V{sub f}) of α-Fe tends to increase from 0.56 for the Fe{sub 85}B{sub 15} to 0.75 for the Fe{sub 85}Si{sub 2}B{sub 8}P{sub 4}Cu{sub 1} alloy. The computational analysis of the alloys for G of α-Fe and amorphous phases (G{sub α-Fe} and G{sub amor}) shows that a relationship G{sub α-Fe} ∼ G{sub amor} holds for the Fe{sub 85}Si{sub 2}B{sub 12}Cu{sub 1}, whereas G{sub α-Fe} < G{sub amor} for the Fe{sub 85}Si{sub 2}B{sub 8}P{sub 4}Cu{sub 1} alloy at T{sub x1} and that an extremely high V{sub f} = 0.75 was achieved for the Fe{sub 85}Si{sub 2}B{sub 8}P{sub 4}Cu{sub 1} alloy by including 2.8 at. % Si and 4.5 at. % P into α-Fe. These computational results indicate that the Fe{sub 85}Si{sub 2}B

Mechanical properties of Fe-Ni-Cr-Si-B bulk glassy alloy

International Nuclear Information System (INIS)

Lee, Kee Ahn; Kim, Yong Chan; Kim, Jung Han; Lee, Chong Soo; Namkung, Jung; Kim, Moon Chul

2007-01-01

The mechanical properties and crystallization behavior of new Fe-Ni-Cr-Si-B-based bulk glassy alloys were investigated. The suitability of the continuous roll casting method for the production of bulk metallic glass (BMG) sheets in such alloy systems was also examined. BMG samples (Fe-Ni-Cr-Si-B, Fe-Ni-Zr-Cr-Si-B, Fe-Ni-Zr-Cr-W-Si-B) in amorphous strip, cylindrical, and sheet forms were prepared through melt spinning, copper mold casting, and twin roll strip casting, respectively. Fe-Ni-Cr-Si-B alloy exhibited compressive strength of up to 2.93 GPa and plastic strain of about 1.51%. On the other hand, the Fe-Ni-Zr-Cr-Si-B, composite-type bulk sample with diameter of 2.0 mm showed remarkable compressive plastic strain of about 4.03%. The addition of zirconium was found to enhance the homogeneous precipitation of nanocrystalline less than 7 nm and to develop a hybrid-composite microstructure with increasing sample thickness. Twin roll strip casting was successfully applied to the fabrication of sheets in Fe-Ni-Cr-Si-B-based BMGs. The combined characteristics of high mechanical properties and ease of microstructure control proved to be promising in terms of the future progress of structural bulk amorphous alloys

Mechanical properties of Fe-Ni-Cr-Si-B bulk glassy alloy

Energy Technology Data Exchange (ETDEWEB)

Lee, Kee Ahn [School of Advanced Materials Engineering, Andong National University, Andong 760-749 (Korea, Republic of)]. E-mail: keeahn@andong.ac.kr; Kim, Yong Chan [New Metals Research Team, RIST, Pohang 790-330 (Korea, Republic of); Kim, Jung Han [Center for Advanced Aerospace materials, POSTECH, Pohang 790-784 (Korea, Republic of); Lee, Chong Soo [Center for Advanced Aerospace materials, POSTECH, Pohang 790-784 (Korea, Republic of); Namkung, Jung [New Metals Research Team, RIST, Pohang 790-330 (Korea, Republic of); Kim, Moon Chul [New Metals Research Team, RIST, Pohang 790-330 (Korea, Republic of)

2007-03-25

The mechanical properties and crystallization behavior of new Fe-Ni-Cr-Si-B-based bulk glassy alloys were investigated. The suitability of the continuous roll casting method for the production of bulk metallic glass (BMG) sheets in such alloy systems was also examined. BMG samples (Fe-Ni-Cr-Si-B, Fe-Ni-Zr-Cr-Si-B, Fe-Ni-Zr-Cr-W-Si-B) in amorphous strip, cylindrical, and sheet forms were prepared through melt spinning, copper mold casting, and twin roll strip casting, respectively. Fe-Ni-Cr-Si-B alloy exhibited compressive strength of up to 2.93 GPa and plastic strain of about 1.51%. On the other hand, the Fe-Ni-Zr-Cr-Si-B, composite-type bulk sample with diameter of 2.0 mm showed remarkable compressive plastic strain of about 4.03%. The addition of zirconium was found to enhance the homogeneous precipitation of nanocrystalline less than 7 nm and to develop a hybrid-composite microstructure with increasing sample thickness. Twin roll strip casting was successfully applied to the fabrication of sheets in Fe-Ni-Cr-Si-B-based BMGs. The combined characteristics of high mechanical properties and ease of microstructure control proved to be promising in terms of the future progress of structural bulk amorphous alloys.

Magnetostriction of the polycrystalline Fe80Al20 alloy doped with boron

International Nuclear Information System (INIS)

Bormio-Nunes, Cristina; Teodoro dos Santos, Claudio; Botani de Souza Dias, Mateus; Doerr, Mathias; Granovsky, Sergey; Loewenhaupt, Michael

2012-01-01

Highlights: ► Fe 80 Al 20 polycrystalline alloy magnetostriction 40 ppm increased to 80 ppm due to 2% of B doping. ► B stabilizes α-FeAl phase and a coexistence of α-FeAl + Fe 3 Al improves magnetostriction. ► Presence of Fe 2 B phase causes domain rearrangement revealed by the decrease of the volume magnetostriction. - Abstract: The doping of Fe 80 Al 20 polycrystalline alloy with 2% of boron increased the total magnetostriction twofold compared to a sample without boron. A value close to 80 ppm was achieved at 300 K. The microstructures of the boron-doped alloys show a dendritically solidified matrix with interdendritic α-FeAl and/or Fe 3 Al and Fe 2 B eutectic between the grains. The XRD analysis reveals an increase in the volume fraction of α-FeAl and a correspondent decrease of the Fe 3 Al phase volume fraction as the boron content increases. The increase of the volume fraction of this tetragonal Fe 2 B phase in the samples doped with boron causes the decrease of the strong volume magnetostriction that was observed in the alloy without boron. There is some evidence that the improvement of the magnetostriction magnitude due to the addition of boron to the Fe 80 Al 20 alloy could reach the maximal magnetostriction if the 1:1 optimal ratio of the volume fractions of the α-FeAl and Fe 3 Al phases could be reached.

Interfacial mixing in double-barrier magnetic tunnel junctions with amorphous NiFeSiB layers

International Nuclear Information System (INIS)

Chun, B.S.; Ko, S.P.; Hwang, J.Y.; Rhee, J.R.; Kim, T.W.; Kim, Y.K.

2007-01-01

Double-barrier magnetic tunnel junctions (DMTJs) comprising Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO x /free layer (CoFe 4/NiFeSiB 2/CoFe 4, CoFe 10, or NiFeSiB 10)/AlO x /CoFe 7/IrMn 10/Ru 60 (nm) have been examined with an emphasis given on understanding the interfacial mixing effects. The DMTJ, consisted of NiFeSiB, shows low switching field and low bias voltage dependence because the amorphous NiFeSiB has lower M S (=800 emu/cm 3 ) and offers smoother interfaces than polycrystalline CoFe. An interesting feature observed in the CoFe/NiFeSiB/CoFe sandwich free layered DMTJ is the presence of a wavy MR transfer curve at high-resistance region. Because the polycrystalline CoFe usually grows into a columnar structure, diamagnetic CoSi, paramagnetic FeSi, and/or diamagnetic CoB might have been formed during the sputter-deposition process. By employing electron energy loss spectrometry (EELS) and Auger electron spectroscopy (AES), we were able to confirm that Si and B atoms were arranged evenly in the top and bottom portions of AlO x /CoFe interfaces. This means that the interfacial mixing resulted in a distorted magnetization reversal process

Enhancement of the Si p-n diode NIR photoresponse by embedding β-FeSi2 nanocrystallites.

Science.gov (United States)

Shevlyagin, A V; Goroshko, D L; Chusovitin, E A; Galkin, K N; Galkin, N G; Gutakovskii, A K

2015-10-05

By using solid phase epitaxy of thin Fe films and molecular beam epitaxy of Si, a p(+)-Si/p-Si/β-FeSi2 nanocrystallites/n-Si(111) diode structure was fabricated. Transmission electron microscopy data confirmed a well-defined multilayered structure with embedded nanocrystallites of two typical sizes: 3-4 and 15-20 nm, and almost coherent epitaxy of the nanocrystallites with the Si matrix. The diode at zero bias conditions exhibited a current responsivity of 1.7 mA/W, an external quantum efficiency of about 0.2%, and a specific detectivity of 1.2 × 10(9) cm × Hz(1/2)/W at a wavelength of 1300 nm at room temperature. In the avalanche mode, the responsivity reached up to 20 mA/W (2% in terms of efficiency) with a value of avalanche gain equal to 5. The data obtained indicate that embedding of β-FeSi2 nanocrystallites into the depletion region of the Si p-n junction results in expansion of the spectral sensitivity up to 1600 nm and an increase of the photoresponse by more than two orders of magnitude in comparison with a conventional Si p-n junction. Thereby, fabricated structure combines advantage of the silicon photodiode functionality and simplicity with near infrared light detection capability of β-FeSi2.

On the Correlation between Morphology of alpha and Its Crystallographic Orientation Relationship with TiB and Beta in Boron Containing Ti-5Al-5Mo-5V-3Cr-0.5Fe Alloy (Preprint)

Science.gov (United States)

2012-01-01

orientation microscopy studies on a boron containing version of the commercial Ti- 5Al-5Mo-5V-3Cr-0.5Fe ( Ti5553 ) alloy. 15. SUBJECT TERMS Ti5553 ...of the commercial Ti-5Al-5Mo-5V-3Cr-0.5Fe ( Ti5553 ) alloy. Keywords: Ti5553 , TiB, EBSD, crystallography, orientation relationship. Paper There has...absence of orientation relationships between the α, β and TiB phases, on the morphology of α nucleating from TiB in the Ti5553 alloy.. The base

Plasma immersion ion implantation of boron for ribbon silicon solar cells

Directory of Open Access Journals (Sweden)

Derbouz K.

2013-09-01

Full Text Available In this work, we report for the first time on the solar cell fabrication on n-type silicon RST (for Ribbon on Sacrificial Template using plasma immersion ion implantation. The experiments were also carried out on FZ silicon as a reference. Boron was implanted at energies from 10 to 15 kV and doses from 1015 to 1016 cm-2, then activated by a thermal annealing in a conventional furnace at 900 and 950 °C for 30 min. The n+ region acting as a back surface field was achieved by phosphorus spin-coating. The frontside boron emitter was passivated either by applying a 10 nm deposited SiOX plasma-enhanced chemical vapor deposition (PECVD or with a 10 nm grown thermal oxide. The anti-reflection coating layer formed a 60 nm thick SiNX layer. We show that energies less than 15 kV and doses around 5 × 1015 cm-2 are appropriate to achieve open circuit voltage higher than 590 mV and efficiency around 16.7% on FZ-Si. The photovoltaic performances on ribbon silicon are so far limited by the bulk quality of the material and by the quality of the junction through the presence of silicon carbide precipitates at the surface. Nevertheless, we demonstrate that plasma immersion ion implantation is very promising for solar cell fabrication on ultrathin silicon wafers such as ribbons.

The fraction of substitutional boron in silicon during ion implantation and thermal annealing

International Nuclear Information System (INIS)

Caturla, M.J.; Johnson, M.D.; Diaz de la Rubia, T.

1998-01-01

We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from ab initio calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800 degree C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. copyright 1998 American Institute of Physics

Use of B{sub 2}O{sub 3} films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon

Energy Technology Data Exchange (ETDEWEB)

Kalkofen, Bodo, E-mail: bodo.kalkofen@ovgu.de; Amusan, Akinwumi A.; Bukhari, Muhammad S. K.; Burte, Edmund P. [Institute of Micro and Sensor Systems, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Garke, Bernd [Institute for Experimental Physics, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Lisker, Marco [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Gargouri, Hassan [SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany)

2015-05-15

Plasma-assisted atomic layer deposition (PALD) was carried for growing thin boron oxide films onto silicon aiming at the formation of dopant sources for shallow boron doping of silicon by rapid thermal annealing (RTA). A remote capacitively coupled plasma source powered by GaN microwave oscillators was used for generating oxygen plasma in the PALD process with tris(dimethylamido)borane as boron containing precursor. ALD type growth was obtained; growth per cycle was highest with 0.13 nm at room temperature and decreased with higher temperature. The as-deposited films were highly unstable in ambient air and could be protected by capping with in-situ PALD grown antimony oxide films. After 16 weeks of storage in air, degradation of the film stack was observed in an electron microscope. The instability of the boron oxide, caused by moisture uptake, suggests the application of this film for testing moisture barrier properties of capping materials particularly for those grown by ALD. Boron doping of silicon was demonstrated using the uncapped PALD B{sub 2}O{sub 3} films for RTA processes without exposing them to air. The boron concentration in the silicon could be varied depending on the source layer thickness for very thin films, which favors the application of ALD for semiconductor doping processes.

Electroluminescence properties of Si MOS structures with incorporation of FeSi2 precipitates formed by iron implantation

International Nuclear Information System (INIS)

Chow, C.F.; Wong, S.P.; Gao, Y.; Ke, N.; Li, Q.; Cheung, W.Y.; Lourenco, M.A.; Homewood, K.P.

2005-01-01

Silicon MOS structures with FeSi 2 precipitates embedded in the MOS active region have been fabricated and the electroluminescence (EL) properties from these FeSi 2 -Si MOS structures were measured as a function of temperature from 80 K to 300 K. Clear EL signals were observed even at room temperature for samples prepared at appropriate processing conditions. The EL spectra consist of two peaks, one attributed to FeSi 2 and the other attributed to Si band edge emission. While the intensity of the FeSi 2 peak showed the usual thermal quenching behavior, the Si band edge emission showed the opposite trend with its intensity increased with increasing temperature. Details of the line shapes and their temperature dependence are analyzed and discussed

Effects of Different Levels of Boron on Microstructure and Hardness of CoCrFeNiAlxCu0.7Si0.1By High-Entropy Alloy Coatings by Laser Cladding

Directory of Open Access Journals (Sweden)

Yizhu He

2017-01-01

Full Text Available High-entropy alloys (HEAs are novel solid solution strengthening metallic materials, some of which show attractive mechanical properties. This paper aims to reveal the effect of adding small atomic boron on the interstitial solid solution strengthening ability in the laser cladded CoCrFeNiAlxCu0.7Si0.1By (x = 0.3, x = 2.3, and 0.3 ≤ y ≤ 0.6 HEA coatings. The results show that laser rapid solidification effectively prevents brittle boride precipitation in the designed coatings. The main phase is a simple face-centered cubic (FCC matrix when the Al content is equal to 0.3. On the other hand, the matrix transforms to single bcc solid solution when x increases to 2.3. Increasing boron content improves the microhardness of the coatings, but leads to a high degree of segregation of Cr and Fe in the interdendritic microstructure. Furthermore, it is worth noting that CoCrFeNiAl0.3Cu0.7Si0.1B0.6 coatings with an FCC matrix and a modulated structure on the nanometer scale exhibit an ultrahigh hardness of 502 HV0.5.

Fabrication of FeSi and Fe{sub 3}Si compounds by electron beam induced mixing of [Fe/Si]{sub 2} and [Fe{sub 3}/Si]{sub 2} multilayers grown by focused electron beam induced deposition

Energy Technology Data Exchange (ETDEWEB)

Porrati, F.; Sachser, R.; Huth, M. [Physikalisches Institut, Goethe-Universität, Max-von-Laue-Str. 1, D-60438 Frankfurt am Main (Germany); Gazzadi, G. C. [S3 Center, Nanoscience Institute-CNR, Via Campi 213/a, 41125 Modena (Italy); Frabboni, S. [S3 Center, Nanoscience Institute-CNR, Via Campi 213/a, 41125 Modena (Italy); FIM Department, University of Modena and Reggio Emilia, Via G. Campi 213/a, 41125 Modena (Italy)

2016-06-21

Fe-Si binary compounds have been fabricated by focused electron beam induced deposition by the alternating use of iron pentacarbonyl, Fe(CO){sub 5}, and neopentasilane, Si{sub 5}H{sub 12} as precursor gases. The fabrication procedure consisted in preparing multilayer structures which were treated by low-energy electron irradiation and annealing to induce atomic species intermixing. In this way, we are able to fabricate FeSi and Fe{sub 3}Si binary compounds from [Fe/Si]{sub 2} and [Fe{sub 3}/Si]{sub 2} multilayers, as shown by transmission electron microscopy investigations. This fabrication procedure is useful to obtain nanostructured binary alloys from precursors which compete for adsorption sites during growth and, therefore, cannot be used simultaneously.

Crystallisation kinetics of amorphous Fe72.5-xCu1Nb4.5Si10+x+yB12-y alloy

International Nuclear Information System (INIS)

Miglierini, M.; Lipka, J.; Sitek, J.

1994-01-01

Fe 73.5 Cu 1 Nb 3 Si 13.5 B 9 and Fe 72.5-x Cu 1 Nb 4.5 Si 10+x+y B 12-y alloys are compared from the point of view of crystallisation behaviour and changes in the short-range order in the amorphous reminder. The increase in Nb to 4.5 at.% in the latter system slows down the formation of nanocrystals to approximately 40% even after 16 hours of anneal at 550 C for x = 0.5, y = 3. Segregation-induced changes in the short-range order are manifested via hyperfine field distributions corresponding to the amorphous reminder. (orig.)

Interface structure and stabilization of metastable B2-FeSi/Si(111) studied with low-energy electron diffraction and density functional theory

International Nuclear Information System (INIS)

Walter, S; Blobner, F; Krause, M; Mueller, S; Heinz, K; Starke, U

2003-01-01

We present a combined experimental and theoretical investigation of the interface between a B2-type FeSi film and Si(111). Using an ultra-thin B2-FeSi film grown on Si(111), the interface is still reached by electrons, so quantitative low-energy electron diffraction (LEED) could be applied to determine the bonding geometry experimentally. As a result, the local configuration at the shallow buried interface is characterized by near-substrate Fe atoms being 8-fold coordinated to Si atoms and by the silicide unit cell being rotated by 180 deg. with respect to the Si unit cell (B8 configuration). The interface energetics were explored by total-energy calculations using density functional theory (DFT). The B8-type interface proves to be the most stable one, consistent with the experimental findings. The atomic geometries obtained experimentally (LEED) and theoretically (DFT) agree within the limits of errors. Additionally, the calculations explain the stabilization of the B2 phase, which is unstable as bulk material: the analysis of the elastic behaviour reveals a reversed energy hierarchy of B2 and the bulk stable B20 phase when epitaxial growth on Si(111) is enforced

The effects of boron on Tb0.27Dy0.73Fe2 compound

International Nuclear Information System (INIS)

Wu Lei; Chen Xicheng; Chen Xishen

1995-01-01

The magnetostrictive properties and microstructure of Tb 0.27 Dy 0.73 Fe 2 B x (x=0, 0.05, 0.1, 0.15, 0.2) have been investigated. Measurement of magnetic properties, X-ray diffraction and magnetostriction were made on Tb 0.27 Dy 0.73 Fe 2 B x polycrystalline samples prepared by arc melting. With the increase of boron content x, the iron-rich phase which leads to the detriment of magnetostrictive properties, decreases. The matrix phase of these alloys also has the MgCu 2 structure. The lattice constant and Curie transition temperature change only slightly. The doping of boron in the Tb 0.27 Dy 0.73 Fe 2 alloy can restrain the emergence of the iron-rich phase. The peritectic region probably shifts slightly with the addition of boron. ((orig.))

The diffusion bonding of silicon carbide and boron carbide using refractory metals

International Nuclear Information System (INIS)

Cockeram, B.V.

1999-01-01

Joining is an enabling technology for the application of structural ceramics at high temperatures. Metal foil diffusion bonding is a simple process for joining silicon carbide or boron carbide by solid-state, diffusive conversion of the metal foil into carbide and silicide compounds that produce bonding. Metal diffusion bonding trials were performed using thin foils (5 microm to 100 microm) of refractory metals (niobium, titanium, tungsten, and molybdenum) with plates of silicon carbide (both α-SiC and β-SiC) or boron carbide that were lapped flat prior to bonding. The influence of bonding temperature, bonding pressure, and foil thickness on bond quality was determined from metallographic inspection of the bonds. The microstructure and phases in the joint region of the diffusion bonds were evaluated using SEM, microprobe, and AES analysis. The use of molybdenum foil appeared to result in the highest quality bond of the metal foils evaluated for the diffusion bonding of silicon carbide and boron carbide. Bonding pressure appeared to have little influence on bond quality. The use of a thinner metal foil improved the bond quality. The microstructure of the bond region produced with either the α-SiC and β-SiC polytypes were similar

Identification of photoluminescence P line in indium doped silicon as In{sub Si}-Si{sub i} defect

Energy Technology Data Exchange (ETDEWEB)

Lauer, Kevin, E-mail: klauer@cismst.de; Möller, Christian [CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt (Germany); Schulze, Dirk [TU Ilmenau, Institut für Physik, Weimarer Str. 32, 98693 Ilmenau (Germany); Ahrens, Carsten [Infineon Technologies AG, Am Campeon 1-12, 85579 Neubiberg (Germany)

2015-01-15

Indium and carbon co-implanted silicon was investigated by low-temperature photoluminescence spectroscopy. A photoluminescence peak in indium doped silicon (P line) was found to depend on the position of a silicon interstitial rich region, the existence of a SiN{sub x}:H/SiO{sub x} stack and on characteristic illumination and annealing steps. These results led to the conclusion that silicon interstitials are involved in the defect and that hydrogen impacts the defect responsible for the P line. By applying an unique illumination and annealing cycle we were able to link the P line defect with a defect responsible for degradation of charge carrier lifetime in indium as well as boron doped silicon. We deduced a defect model consisting of one acceptor and one silicon interstitial atom denoted by A{sub Si}-Si{sub i}, which is able to explain the experimental data of the P line as well as the light-induced degradation in indium and boron doped silicon. Using this model we identified the defect responsible for the P line as In{sub Si}-Si{sub i} in neutral charge state and C{sub 2v} configuration.

Study on Formation Mechanism of Fayalite (Fe2SiO4) by Solid State Reaction in Sintering Process

Science.gov (United States)

Wang, Zhongbing; Peng, Bing; Zhang, Lifeng; Zhao, Zongwen; Liu, Degang; Peng, Ning; Wang, Dawei; He, Yinghe; Liang, Yanjie; Liu, Hui

2018-04-01

The sintering behaviors among SiO2, FeS and Fe3O4 were detected to reveal the formation mechanism of Fe2SiO4. The results indicated that the formation mechanism is divided into five steps: (1) migration of O2- induced by S2- under a reducing atmosphere; (2) formation of Fe3O4- β ; (3) migration of Fe(II) into a ferrite cluster structure to gain oxygen and form Fe3- x O4; (4) Fe(II) invaded the silicon atomic position and released Si(IV); and (5) formation of the stable structure of Fe2SiO4 through chemical diffusion between cations of Fe(II) and Si(IV). These findings can provide theoretical support for controlling the process of the recovery of valuable metals in copper slag through the combined roasting modification-magnetic separation process.

Growth of β-FeSi2 layers on Si (111) by solid phase and reactive deposition epitaxies

International Nuclear Information System (INIS)

Miquita, D.R.; Paniago, R.; Rodrigues, W.N.; Moreira, M.V.B.; Pfannes, H.-D.; Oliveira, A.G. de

2005-01-01

Iron silicides were grown on Si (111) substrates by Solid Phase Epitaxy (SPE) and Reactive Deposition Epitaxy (RDE) to identify the optimum conditions to obtain the semiconducting β-FeSi 2 phase. The films were produced under different growth and annealing conditions and analyzed in situ and ex situ by X-ray Photoelectron Spectroscopy, and ex situ by Conversion Electron Moessbauer Spectroscopy. The use of these techniques allowed the investigation of different depth regions of the grown layer. Films of the ε-FeSi and β-FeSi 2 phases were obtained as well as the mixtures Fe 3 Si + ε-FeSi and ε-FeSi + β-FeSi 2 . The sequence Fe 3 Si→ε-FeSi→β-FeSi 2 was found upon annealing, where the phase transformation occurred due to the migration of silicon atoms from the substrate to the surface region of the grown layer. The best conditions for the phase transformation in SPE samples were met after annealing in the range 700 - 800 deg. C. For the RDE samples, the transition to the beta phase occurred between 600 and 700 deg. C, but pure β-FeSi 2 was obtained only after two hours of annealing at 700 deg. C

Mo-Si-B-Based Coatings for Ceramic Base Substrates

Science.gov (United States)

Perepezko, John Harry (Inventor); Sakidja, Ridwan (Inventor); Ritt, Patrick (Inventor)

2015-01-01

Alumina-containing coatings based on molybdenum (Mo), silicon (Si), and boron (B) ("MoSiB coatings") that form protective, oxidation-resistant scales on ceramic substrate at high temperatures are provided. The protective scales comprise an aluminoborosilicate glass, and may additionally contain molybdenum. Two-stage deposition methods for forming the coatings are also provided.

Effect of Co on Si and Fe-containing intermetallic compounds (IMCs) in Al-20Si-5Fe alloys

Energy Technology Data Exchange (ETDEWEB)

Fatih Kilicaslan, M. [Department of Physics, Faculty of Art and Science, Kastamonu University, Kastamonu (Turkey); Yilmaz, Fikret [Department of Physics, Faculty of Art and Science, Gaziosmanpasa University, Tokat (Turkey); Hong, Soon-Jik, E-mail: hongsj@kongju.ac.kr [Division of Advanced Materials Engineering, Institute for Rare Metals, Kongju National University, Cheonan 331717 (Korea, Republic of); Uzun, Orhan, E-mail: orhan.uzun@gop.edu.tr [Department of Physics, Faculty of Art and Science, Gaziosmanpasa University, Tokat (Turkey)

2012-10-30

The effects of cobalt addition on microstructure and mechanical properties of Al-20Si-5Fe-XCo (X=0, 1, 3, and 5) alloys were reported in this study. The alloys were produced by both conventional sand casting and melt-spinning at 20 m/s disk velocity. Microstructures of the samples were investigated using X-ray diffractometry (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Vickers micro-hardness tester was used for hardness measurements. Results showed that Co addition can alter morphology of Fe-bearing intermetallic compounds (IMCs) from long rod/needle-like structures to short rod-like ones, and lead to a more homogenous distribution in the microstructure. Addition of 5 wt% Co leads to a decrease in average size of the primary silicon phases in as-cast Al-Si alloys. In melt-spun alloys, with the addition of Co, the microstructure became finer and more homogenously distributed, while thickness of the featureless zone has seen great increase. The optimum Fe to Co ratio was found to be 1 for suppressing the undesirable effect of Fe-bearing acicular/needle-like intermetallic compounds.

Crystallization of amorphous Fe78Si9B13 alloy

International Nuclear Information System (INIS)

Jakubczyk, E; Krajczyk, A; Jakubczyk, M

2007-01-01

The crystallization process of Fe 78 Si 9 B 13 metallic glass was investigated by DSC, X-ray diffraction, electrical resistivity, Hall effect and TEM methods. The investigations proved two-stages crystallization. By means of non-isothermal DSC experiments the activation energy and the Avrami exponent were determined for both stages. The created phases: α-Fe(Si) and (Fe,Si) 2 B were identified on the basis of X-ray and TEM investigations. However, TEM observations showed also a little amount of the FeB 49 phase as well as some rest of the amorphous phase. The electrical and Hall resistivities decrease abruptly after the creation of the phases out of the amorphous matrix

Structural and magnetic properties of Fe76P5(Si0.3B0.5C0.2)19 amorphous alloy

International Nuclear Information System (INIS)

Lavorato, G.C.; Fiore, G.; Tiberto, P.; Baricco, M.; Sirkin, H.; Moya, J.A.

2012-01-01

Highlights: ► Fe 76 P 5 (Si 0.3 B 0.5 C 0.2 ) 19 amorphous alloy in ribbons and 1 mm and 2 mm rod samples. ► Good glass forming ability with ΔT = 50 K and γ = 0.37 and off-eutectic composition. ► Good soft magnetic properties with magnetization saturation of 1.44 T. ► Geometrical factors are the primary causes of magnetic losses in frequencies above 10 Hz. - Abstract: Recently, bulk amorphous alloys were produced in the Fe–B–Si–P–C system with high glass forming ability, excellent magnetic properties and the advantage of containing no expensive glass-forming elements, such as Ga, Y, Cr or Nb, having, therefore, a good perspective of commercial applications. In the present work, the Fe 76 P 5 (Si 0.3 B 0.5 C 0.2 ) 19 amorphous alloy prepared by two quenching techniques has been studied. Amorphous ribbons of about 40 μm thick were obtained by planar-flow casting together with cylinders having 1 and 2 mm diameter produced by copper mold injection casting. All the samples appear fully amorphous after X-ray diffraction analysis. A comprehensive set of thermal data (glass, crystallization, melting and liquidus temperatures) were obtained as well as a description of the melting and solidification processes. Mechanical microhardness tests showed that the samples have a hardness of 9.7 ± 0.3 GPa. Good soft-magnetic properties were obtained, including a high magnetization of 1.44 T and a low coercivity (4.5 A/m for ribbons and 7.5 A/m in the case of 1 mm rod samples, both in as-cast state). Thermomagnetic studies showed a Curie temperature around 665 K and the precipitation of new magnetic phases upon temperatures of 1000 K. Furthermore, the frequency dependence of magnetic losses at a fixed peak induction was studied. The results suggest the occurrence of a fine magnetic domain structure in bulk samples. The good soft magnetic properties of the bulk metallic glass obtained by copper mold casting for this particular Fe-based composition suggests possible

Magnetic ordering in Sc{sub 2}CoSi{sub 2}-type R{sub 2}FeSi{sub 2} (R=Gd, Tb) and R{sub 2}CoSi{sub 2} (R=Y, Gd–Er) compounds

Energy Technology Data Exchange (ETDEWEB)

Morozkin, A.V., E-mail: morozkin@tech.chem.msu.ru [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, GSP-2, Moscow 119992 (Russian Federation); Knotko, A.V. [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, GSP-2, Moscow 119992 (Russian Federation); Yapaskurt, V.O. [Department of Petrology, Geological Faculty, Moscow State University, Leninskie Gory, Moscow 119992 (Russian Federation); Pani, M. [Department of Chemistry, University of Genova, Via Dodecaneso 31, 16146 Genova (Italy); Institute SPIN-CNR, C. Perrone 24, 16152 Genova (Italy); Nirmala, R. [Indian Institute of Technology Madras, Chennai 600036 (India); Quezado, S.; Malik, S.K. [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, Natal 59082-970 (Brazil)

2016-09-01

Magnetic and magnetocaloric properties of Sc{sub 2}CoSi{sub 2}-type R{sub 2}TSi{sub 2} (R=Gd–Er, T=Fe, Co) compounds have been studied using magnetization data. These indicate the presence of mixed ferromagnetic and antiferromagnetic interactions in these compounds. One observes a ferromagnetic transition followed by an antiferromagnetic order and a further possible spin-reorientation transition at low temperatures. Compared to Gd{sub 2}{Fe, Co}Si{sub 2}, the Tb{sub 2}FeSi{sub 2} and {Tb–Er}{sub 2}CoSi{sub 2} compounds exhibit remarkable hysteresis (for e.g. Tb{sub 2}FeSi{sub 2} shows residual magnetization M{sub res}/Tb=2.45 μ{sub B}, coercive field H{sub coer}=14.9 kOe, and critical field H{sub crit}~5 kOe at 5 K) possibly due to the magnetocrystalline anisotropy of the rare earth. The R{sub 2}{Fe, Co}Si{sub 2} show relatively small magnetocaloric effect (i.e. isothermal magnetic entropy change, ΔS{sub m}) around the magnetic transition temperature: the maximal value of MCE is demonstrated by Ho{sub 2}CoSi{sub 2} (ΔS{sub m}=−8.1 J/kg K at 72 K and ΔS{sub m}=−9.4 J/kg K at 23 K in field change of 50 kOe) and Er{sub 2}CoSi{sub 2} (ΔS{sub m}=−13.6 J/kg K at 32 K and ΔS{sub m}=−8.4 J/kg K at 12 K in field change of 50 kOe). - Highlights: • {Gd–Er}{sub 2}{Fe, Co}Si{sub 2} show high-temperature ferromagnetic-type transitions. • {Gd–Er}{sub 2}{Fe, Co}Si{sub 2} show low-temperature spin-reorientation transitions. • Tb{sub 2}FeSi{sub 2} and {Tb–Er}{sub 2}CoSi{sub 2} compounds exhibit low-temperature hysteresis. • Tb{sub 2}FeSi{sub 2} shows M{sub res}/Tb=2.45 μ{sub B}, H{sub coer}=14.9 kOe and H{sub crit} ~5 kOe at 5 K • Considerable magnetocaloric effect is exhibited by Ho{sub 2}CoSi{sub 2} and Er{sub 2}CoSi{sub 2}.

(SiC/AlN)2 multilayer film as an effective protective coating for sintered NdFeB by magnetron sputtering

Science.gov (United States)

You, Yu; Li, Heqin; Huang, Yiqin; Tang, Qiong; Zhang, Jing; Xu, Jun

2017-08-01

SiC/AlN and (SiC/AlN)2 multilayer films with a well-arranged bilayer structure and a four-layer structure are prepared respectively on NdFeB substrates by a magnetron sputtering method. Crystal phase and microstructures of the SiC/AlN and (SiC/AlN)2 films are investigated using x-ray diffraction (XRD), field-emission scanning electron microscope (FESEM) and atomic force microscope (AFM). It is observed that the surface of the (SiC/AlN)2 four-layer film is much denser and smoother than that of the SiC/AlN bilayer film. Corrosion behaviors of the NdFeB substrates coated with SiC/AlN and (SiC/AlN)2 films as well as the bare NdFeB substrate are evaluated by potentiodynamic polarization curve tests. It is revealed that the lateral growth structures developed in interfaces are favorable for an enhanced corrosion resistance. Corrosion current densities of the (SiC/AlN)2 coated NdFeB measured in acid, alkali and salt solutions are 2.796  ×  10-9, 3.65  ×  10-6, and 2.912  ×  10-6 A cm-2, respectively, which are much lower than those of the bare NdFeB and the SiC/AlN coated NdFeB.

Mossbauer studies of amorphous Fe73.5Cu1Nb3Si13.5B9 alloy

DEFF Research Database (Denmark)

Jiang, Jianzhong

1996-01-01

This paper reports a Mossbauer study of amorphous Fe73.5Cu1Nb3Si13.5B9 alloy between 10 and 673 K. The Curie temperature Tc is found to be 620-+ 1 K. The temperature dependence of the reduced average hyperfine field can be explained on the basis of Handrich's model of amorphous ferromagnetism...

Iron solubility in highly boron-doped silicon

International Nuclear Information System (INIS)

McHugo, S.A.; McDonald, R.J.; Smith, A.R.; Hurley, D.L.; Weber, E.R.

1998-01-01

We have directly measured the solubility of iron in high and low boron-doped silicon using instrumental neutron activation analysis. Iron solubilities were measured at 800, 900, 1000, and 1100thinsp degree C in silicon doped with either 1.5x10 19 or 6.5x10 14 thinspboronthinspatoms/cm 3 . We have measured a greater iron solubility in high boron-doped silicon as compared to low boron-doped silicon, however, the degree of enhancement is lower than anticipated at temperatures >800thinsp degree C. The decreased enhancement is explained by a shift in the iron donor energy level towards the valence band at elevated temperatures. Based on this data, we have calculated the position of the iron donor level in the silicon band gap at elevated temperatures. We incorporate the iron energy level shift in calculations of iron solubility in silicon over a wide range of temperatures and boron-doping levels, providing a means to accurately predict iron segregation between high and low boron-doped silicon. copyright 1998 American Institute of Physics

Comparative Study of Catalytic Oxidation of Ethanol to Acetaldehyde Using Fe(III Dispersed on Sb2O5 Grafted on SiO2 and on Untreated SiO2 Surfaces

Directory of Open Access Journals (Sweden)

Benvenutti Edilson V.

1998-01-01

Full Text Available Fe(III was supported on Sb(V oxide grafted on the silica gel surface and directly on the silica gel surface using ion-exchange and impregnation processes producing Fe/Sb/SiO2 and Fe/SiO2, respectively. The catalytic conversion of ethanol to acetaldehyde was much more efficient using Fe/Sb/SiO2 than Fe/SiO2 as catalyst. This higher efficiency of the former catalyst takes into account two aspects: a the new phase FeSbO4 formed when Fe/Sb/SiO2 is heat treated and, b it is higher dispersion on the matrix.

Chinese Script vs Plate-Like Precipitation of Beta-Al9Fe2Si2 Phase in an Al-6.5Si-1Fe Alloy

Science.gov (United States)

Ferdian, Deni; Josse, Claudie; Nguyen, Patrick; Gey, Nathalie; Ratel-Ramond, Nicolas; de Parseval, Philippe; Thebault, Yannick; Malard, Benoit; Lacaze, Jacques; Salvo, Luc

2015-07-01

The microstructure of a high-purity Al-6.5Si-1Fe (wt pct) alloy after solidification at various cooling rates was investigated. In most of the cases, the monoclinic beta-Al9Fe2Si2 phase was observed as long and thin lamellae. However, at a very slow cooling rate, Fe-bearing precipitates with Chinese script morphology appeared together with lamellae. Further analysis showed all these Chinese script precipitates correspond also to the monoclinic beta phase. This finding stresses that differentiating second phases according to their shape may be misleading.

Segregation and Clustering Effects on Complex Boron Redistribution in Strongly Doped Polycrystalline-Silicon Layers

International Nuclear Information System (INIS)

Abadli, S.; Mansour, F.

2011-01-01

This work deals with the investigation of the complex phenomenon of boron (B) transient enhanced diffusion (TED) in strongly implanted silicon (Si) layers. It concerns the instantaneous influences of the strong B concentrations, the Si layers crystallization, the clustering and the B trapping/segregation during thermal post-implantation annealing. We have used Si thin layers obtained from disilane (Si2H6) by low pressure chemical vapor deposition (LPCVD) and then B implanted with a dose of 4 x 1015 atoms/cm2 at an energy of 15 keV. To avoid long redistributions, thermal annealing was carried out at relatively low-temperatures (700, 750 and 800 'deg'C) for various short-times ranging between 1 and 30 minutes. To investigate the experimental secondary ion mass spectroscopy (SIMS) doping profiles, a redistribution model well adapted to the particular structure of Si-LPCVD layers and to the effects of strong-concentrations has been established. The good adjustment of the simulated profiles with the experimental SIMS profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the TED process in strongly doped Si-LPCVD layers. It was found that boron TED is strongly affected by the simultaneous complex kinetics of clustering, crystallization, trapping and segregation during annealing. The fast formation of small Si-B clusters enhances the B diffusivity whereas the evolution of the clusters and segregation reduce this enhancement. (author)

Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films

Science.gov (United States)

Saci, Lynda; Mahamdi, Ramdane; Mansour, Farida; Boucher, Jonathan; Collet, Maéva; Bedel Pereira, Eléna; Temple-Boyer, Pierre

2011-05-01

The present paper studies the boron (B) diffusion in nitrogen (N) doped amorphous silicon (a-Si) layer in original bi-layer B-doped polycrystalline silicon (poly-Si)/in-situ N-doped Si layers (NIDOS) thin films deposited by low pressure chemical vapor deposition (LPCVD) technique. The B diffusion in the NIDOS layer was investigated by secondary ion mass spectrometry (SIMS) and Fourier transform infrared spectroscopy (FTIR) analysis. A new extended diffusion model is proposed to fit the SIMS profile of the bi-layer films. This model introduces new terms which take into account the effect of N concentration on the complex diffusion phenomena of B atoms in bi-layer films. SIMS results show that B diffusion does not exceed one third of NIDOS layer thickness after annealing. The reduction of the B diffusion in the NIDOS layer is due to the formation of complex B-N as shown by infrared absorption measurements. Electrical measurements using four-probe and Hall effect techniques show the good conductivity of the B-doped poly-Si layer after annealing treatment.

Magnetostriction of the polycrystalline Fe{sub 80}Al{sub 20} alloy doped with boron

Energy Technology Data Exchange (ETDEWEB)

Bormio-Nunes, Cristina, E-mail: cristina@demar.eel.usp.br [Escola de Engenharia de Lorena, Dep. de Eng. de Materiais, Universidade de S.Paulo, Lorena, SP (Brazil); Teodoro dos Santos, Claudio; Botani de Souza Dias, Mateus [Escola de Engenharia de Lorena, Dep. de Eng. de Materiais, Universidade de S.Paulo, Lorena, SP (Brazil); Doerr, Mathias; Granovsky, Sergey; Loewenhaupt, Michael [Institut fuer Festkoerperphysik, TU Dresden, D-01062 Dresden (Germany)

2012-10-25

Highlights: Black-Right-Pointing-Pointer Fe{sub 80}Al{sub 20} polycrystalline alloy magnetostriction 40 ppm increased to 80 ppm due to 2% of B doping. Black-Right-Pointing-Pointer B stabilizes {alpha}-FeAl phase and a coexistence of {alpha}-FeAl + Fe{sub 3}Al improves magnetostriction. Black-Right-Pointing-Pointer Presence of Fe{sub 2}B phase causes domain rearrangement revealed by the decrease of the volume magnetostriction. - Abstract: The doping of Fe{sub 80}Al{sub 20} polycrystalline alloy with 2% of boron increased the total magnetostriction twofold compared to a sample without boron. A value close to 80 ppm was achieved at 300 K. The microstructures of the boron-doped alloys show a dendritically solidified matrix with interdendritic {alpha}-FeAl and/or Fe{sub 3}Al and Fe{sub 2}B eutectic between the grains. The XRD analysis reveals an increase in the volume fraction of {alpha}-FeAl and a correspondent decrease of the Fe{sub 3}Al phase volume fraction as the boron content increases. The increase of the volume fraction of this tetragonal Fe{sub 2}B phase in the samples doped with boron causes the decrease of the strong volume magnetostriction that was observed in the alloy without boron. There is some evidence that the improvement of the magnetostriction magnitude due to the addition of boron to the Fe{sub 80}Al{sub 20} alloy could reach the maximal magnetostriction if the 1:1 optimal ratio of the volume fractions of the {alpha}-FeAl and Fe{sub 3}Al phases could be reached.

Magnetron-sputter epitaxy of β-FeSi2(220)/Si(111) and β-FeSi2(431)/Si(001) thin films at elevated temperatures

International Nuclear Information System (INIS)

Liu Hongfei; Tan Chengcheh; Chi Dongzhi

2012-01-01

β-FeSi 2 thin films have been grown on Si(111) and Si(001) substrates by magnetron-sputter epitaxy at 700 °C. On Si(111), the growth is consistent with the commonly observed orientation of [001]β-FeSi 2 (220)//[1-10]Si(111) having three variants, in-plane rotated 120° with respect to one another. However, on Si(001), under the same growth conditions, the growth is dominated by [-111]β-FeSi 2 (431)//[110]Si(001) with four variants, which is hitherto unknown for growing β-FeSi 2 . Photoelectron spectra reveal negligible differences in the valance-band and Fe2p core-level between β-FeSi 2 grown on Si(111) and Si(001) but an apparent increased Si-oxidization on the surface of β-FeSi 2 /Si(001). This phenomenon is discussed and attributed to the Si-surface termination effect, which also suggests that the Si/Fe ratio on the surface of β-FeSi 2 (431)/Si(001) is larger than that on the surface of β-FeSi 2 (220)/Si(111).

Rod-like β-FeSi2 phase grown on Si (111) substrate

International Nuclear Information System (INIS)

Han Ming; Tanaka, Miyoko; Takeguchi, Masaki; Furuya, Kazuo

2004-01-01

Pure Fe with coverage of 0.5-2.0 nm was deposited on Si (111) 7x7 surfaces by reactive deposition epitaxy (RDE) in an integrated ultrahigh vacuum (UHV) system. Transmission electron microscopy (TEM) confirmed that the as-deposited epitaxial phase exhibits rod-like and equilateral triangular morphology. The as-deposited phase was identified as c-FeSi 2 by electron diffraction and high-resolution transmission electron microscopy. It was found that there exists lattice distortion in epitaxial c-FeSi 2 phase. Upon annealing at 1073 K, the metastable c-FeSi 2 transforms into equilibrium β-FeSi 2 phase, the latter inherits completely the morphology of c-FeSi 2 phase. Based on RDE and subsequent annealing, a new fabrication technique to grow rod-like semiconducting β-FeSi 2 on a Si substrate has been proposed in the present work

Mechanochemical synthesis of nanocrystalline Fe and Fe–B magnetic alloys

International Nuclear Information System (INIS)

Mohammadi, Majid; Ghasemi, Ali; Tavoosi, Majid

2016-01-01

Mechanochemical synthesis and magnetic characterization of nanocrystalline Fe and Fe–B magnetic alloys was the goal of this study. In this regard, different Fe_2O_3–B_2O_3 powder mixtures with sufficient amount of CaH_2 were milled in a planetary ball mill in order to produce nanocrystalline Fe, Fe_9_5B_5 and Fe_8_5B_1_5 alloys. The produced samples were characterized using X-ray diffraction (XRD), differential scanning calorimetry (DSC), scanning electron microscopy (SEM) and vibrating sample magnetometer (VSM). The results showed that, nanocrystalline Fe, Fe_9_5B_5 and Fe_8_5B_1_5 alloys can be successfully synthesized by the reduction reaction of Fe_2O_3 and B_2O_3 with CaH_2 during mechanical alloying. The structure of produced Fe_9_5B_5 and Fe_8_5B_1_5 alloys was a combination of Fe and Fe_2B phases with average crystallite sizes of about 15 and 10 nm, respectively. The produced nanocrystalline alloys exhibited soft magnetic properties with the coercivity and saturation of magnetization in the range of 170–240 Oe and 9–28 emu/g, respectively. Increasing the boron content has a destructive effect on soft magnetic properties of Fe–B alloys. - Highlights: • We study the mechanochemical synthesis of nanocrystalline boron, Fe and Fe–B alloys. • We study the reduction reaction of B_2O_3–CaH_2 during milling. • We study the reduction reaction of Fe_2O_3–CaH_2 during milling. • We study the reduction reaction of Fe_2O_3–B_2O_3–CaH_2 during milling. • We study the effect of B on magnetic properties of nanocrystalline Fe–B alloys.

Simulation of a silicon neutron detector coated with TiB2 absorber

International Nuclear Information System (INIS)

Krapohl, D; Nilsson, H-E; Petersson, S; Slavicek, T; Thungström, G; Pospisil, S

2012-01-01

Neutron radiation cannot be directly detected in semiconductor detectors and therefore needs converter layers. Planar clean-room processing can be used in the manufacturing process of semiconductor detectors with metal layers to produce a cost-effective device. We used the Geant4 Monte-Carlo toolkit to simulate the performance of a semiconductor neutron detector. A silicon photo-diode was coated with vapour deposited titanium, aluminium thin films and a titaniumdiboride (TiB 2 ) neutron absorber layer. The neutron capture reaction 10B(n, alpha)7Li is taken advantage of to create charged particles that can be counted. Boron-10 has a natural abundance of about SI 19.8%. The emitted alpha particles are absorbed in the underlying silicon detector. We varied the thickness of the converter layer and ran the simulation with a thermal neutron source in order to find the best efficiency of the TiB 2 converter layer and optimize the clean room process.

Spectrophotometric determination of trace and ultratrace levels of boron in silicon and chlorosilane samples

International Nuclear Information System (INIS)

Chen, J.S.; Lin, H.M.; Yang, M.H.

1991-01-01

Spectrophotometric methods for the determination of boron in the low μg/g and ng/g range in high-purity silicon and dichloro- and trichlorosilanes were investigated in detail. The procedures established involve dissolution of silicon samples and the hydrolyzed products of chlorosilane samples in hydrofluoric acid-containing reagents followed by evaporation of the silicon matrix as H 2 SiF 6 . The boron retained in the treated sample solution was then determined by a spectrophotometric method using carminic acid as a chromatic reagent. Special effort has been paid to the control of the analytical blank and reproducible determination of boron. The results indicate that addition of mannitol and proper control of the evaporation process are effective in preventing volatilization of boron during the evaporation of silicon matrix and can thus attain high recovery of boron and reproducible analysis. Through meticulous control of the analytical blank and experimental conditions, the limit of detection for boron determination with the established method can be as low as ng/g levels. Application of the methods to the determination of boron in various stages of purification of silicon and trichlorosilane as well as in borophosphosilicate film was conducted. (orig.)

Controlling the reaction between boron-containing sealing glass and a lanthanum-containing cathode by adding Nb2O5

Science.gov (United States)

Zhao, Dandan; Fang, Lihua; Tang, Dian; Zhang, Teng

2016-09-01

In solid oxide fuel cell (SOFC) stacks, the volatile boron species present in the sealing glass often react with the lanthanum-containing cathode, degrading the activity of the cathode (this phenomenon is known as boron poisoning). In this work, we report that this detrimental reaction can be effectively reduced by doping bismuth-containing borosilicate sealing glass-ceramic with a niobium dopant. The addition of Nb2O5 not only condenses the [SiO4] structural units in the glass network, but also promotes the conversion of [BO3] to [BO4]. Moreover, the Nb2O5 dopant enhances the formation of boron-containing phases (Ca3B2O6 and CaB2Si2O8), which significantly reduces the volatility of boron compounds in the sealing glass, suppressing the formation of LaBO3 in the reaction couple between the glass and the cathode. The reported results provide a new approach to solve the problem of boron poisoning.

Superconducting state in (W, Ta)5SiB2

Science.gov (United States)

Fukuma, M.; Kawashima, K.; Akimitsu, J.

We characterize the superconducting state in a boro-silicide (W, Ta)5SiB2, with Tc of 6.5 K by means of magnetization, electrical resistivity, and specific heat measurements. As x increased, the transition temperature Tc abruptly enhances from 5.8 to 6.5 K. The magnetization versus magnetic field (M-H) curve indicated that (W, Ta)5SiB2 was a conventional type-II superconductor. The estimated lower critical field Hc1(0) and upper critical field Hc2(T) are about 121 Oe and 14.7 kOe, respectively. The penetration depth λ(0) and coherence length ξ(0) are calculated to be approximately 369 and 14.9 nm, respectively, using Ginzburg-Landau (GL) equations. Specific heat data shows the superconductivity in W4.5Ta0.5SiB2 belongs to a week-coupling BCS superconductor. Finally, we discuss the increasing of Tc in of (W, Ta)5SiB2 system.

Nuclear Magnetic Resonance (NMR) study of the nanocrystalline alloy Fe73.5 Cu1 Nb3 Si13.5 B9

International Nuclear Information System (INIS)

Aliaga-Guerra, D.; Iannarella, L.; Fontes, M.B.; Guimaraes, A.P.; Skorvanek, I.

1994-05-01

Nanocrystalline Fe 73.5 Cu 1 Nb 3 Si 13.5 B 9 alloys were studied with spin echo NMR at 4.2 K, from 15 to 100 MHz. Several lines are observed, with signals from domains and domain walls. Signals at 50-90 MHz appear to arise from 93 Nb nuclei in the amorphous matrix and in the interface of the crystallites. (author). 5 refs, 3 figs

Isothermal section of the Ti-Si-B system at 1250 ° C in the Ti-TiSi2-TiB2 region

OpenAIRE

Ramos, Alfeu Saraiva; Baldan, Renato; Nunes, Carlos Angelo; Coelho, Gilberto Carvalho; Suzuki, Paulo Atsushi; Rodrigues, Geovani

2013-01-01

A partial isothermal section (Ti-TiSi2-TiB2 region) of the ternary Ti-Si-B system at 1250 ° C was determined from heat-treated alloys prepared via arc melting. Microstructural characterization has been carried out through scanning electron microscopy (SEM), x-ray diffraction (xRD) and wavelength dispersive spectrometry (WDS). The results have shown the stability of the near stoichiometric Ti6Si2B phase and a negligible solubility of boron in the Ti-silicides as well as of Si in the Ti-borides...

Very high laser-damage threshold of polymer-derived Si(B)CN-carbon nanotube composite coatings.

Science.gov (United States)

Bhandavat, R; Feldman, A; Cromer, C; Lehman, J; Singh, G

2013-04-10

We study the laser irradiance behavior and resulting structural evolution of polymer-derived silicon-boron-carbonitride (Si(B)CN) functionalized multiwall carbon nanotube (MWCNT) composite spray coatings on copper substrate. We report a damage threshold value of 15 kWcm(-2) and an optical absorbance of 0.97 after irradiation. This is an order of magnitude improvement over MWCNT (1.4 kWcm(-2), 0.76), SWCNT (0.8 kWcm(-2), 0.65) and carbon paint (0.1 kWcm(-2), 0.87) coatings previously tested at 10.6 μm (2.5 kW CO2 laser) exposure. Electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy suggests partial oxidation of Si(B)CN forming a stable protective SiO2 phase upon irradiation.

All-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayers fabricated by Sn-induced low-temperature epitaxy

Energy Technology Data Exchange (ETDEWEB)

Kawano, M.; Ikawa, M.; Arima, K.; Yamada, S.; Kanashima, T.; Hamaya, K., E-mail: hamaya@ee.es.osaka-u.ac.jp [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka 560-8531 (Japan)

2016-01-28

We demonstrate low-temperature growth of all-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayer structures by developing Sn-induced surfactant-mediated molecular beam epitaxy (SMBE) of Ge on Co{sub 2}FeSi. Despite the growth of a semiconductor on a metal, we verify that the inserted Sn monolayers between Ge and Co{sub 2}FeSi enable to promote the 2D epitaxial growth of Ge up to 5 nm at a T{sub G} of 250 °C. An understanding of the mechanism of the Sn-induced SMBE leads to the achievement of all-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayer structures with spin-valve-like magnetization reversals. This study will open a way for vertical-type and high-performance Ge-based spintronics devices.

Study on the Formation of Reaction Phase to Si Addition in Boron Steel Hot-Dipped in Al–7Ni Alloy

Directory of Open Access Journals (Sweden)

Jung-Gil Yun

2017-11-01

Full Text Available In order to reduce the intermetallic compounds formed during the application of an Al–7Ni wt % hot-dip multifunctional coating on boron steel, developed for Tailor Welded Blanks (TWB and hot stamping, 2–6 wt % Si was added to the coating to change the reaction layer. The coating was run at 690 °C for 120 s. Al9FeNi phases were formed on the steel interface, Fe2Al5 was formed on the steel, FeAl3 was generated between the existing layers, and flake-type Al2Fe3Si3 was formed in the Fe2Al5 phase, depending on the Si content. In addition, as Si was added to the coating, the thickness of the Fe2Al5 phase decreased and the thickness of the Al9FeNi phase and Al2Fe3Si3 increased. The decrease in the thickness of the Fe2Al5 phase was mainly due to the effect of the Si solid solution and the Al2Fe3Si3 formation in the Fe2Al5 phase. The reason for the growth of Al9FeNi is that the higher the Si content in the coating, the more the erosion of the interface of the steel material due to the coating solution. Therefore, the outflow of Fe into the coating liquid increased.

Fabrication of Fe-6.5wt%Si Ribbons by Melt Spinning Method on Large Scale

Directory of Open Access Journals (Sweden)

Y. F. Liang

2015-01-01

Full Text Available Melt spinning method has been widely applied for fabrication of Fe-based amorphous/nanocrystalline ribbons in industry. Compared with Fe-based amorphous/nanocrystalline alloys, Fe-6.5wt%Si high silicon steel is of low cost and has comparable excellent soft magnetic properties. Due to higher melting point and absence of supercooled liquid region, fabrication of Fe-6.5wt%Si ribbons is very hard and is only on lab scale. In this paper, we report that large scale fabrication of Fe-6.5wt%Si ribbons was successful and microstructures, ordered structures, and mechanical and soft magnetic properties of the ribbons were investigated. Due to rapid solidification rate, the ribbons were of ultrafine grains, and low degree of order and exhibited some extent of bending and tensile ductility. After heat treatment, excellent soft magnetic properties were obtained. Due to near-zero magnetostriction, the ribbons are promising to be used in electric devices with high frequencies where low noises are required.

Effect of hydridation on structure of amorphous and amorphous-crystalline Fe40Ni40B20 and Co70Fe5Si15B10 bands

International Nuclear Information System (INIS)

Il'inskij, A.G.; Brovko, A.P.; Zelinskaya, G.M.; Kosenko, N.S.; Khristenko, T.M.; Kobzenko, G.F.; Shkola, A.A.

1988-01-01

The structure of amorphous and amorphous-crystaliline Fe 40 Ni 40 B 20 and Co 70 Fe 5 Si-1 5 B 10 alloys, exposed to hydridation at different temperatures, is studied by X-ray diffraction technique. The presence of crystalline constituent in amorphous bands was determined on DRON-3 device and by method of small-angle scattering. The experimental data obtained verify, that hydridation does not only prevent the formation of crystalline phases at annealing, but leads, as well, to disappearance of band crystalline constituent in case of its presence

Particle track etch method for analysis of boron in silicon using 10B(n,α)7Li reaction

International Nuclear Information System (INIS)

Chakarvarti, S.K.; Nagpaul, K.K.

1980-01-01

Boron bulk doped p-type (111) silicon thin wafers of different resistivities (1 to 100 ohm-cm +- 20%) have been analysed for boron using cellulose nitrate-Daicel and red dyed LR-115 type II films as detectors of alpha particles from 10 B(n,α) 7 Li reaction. The two detectors measure the same value of boron (approximately 0.1 ppm) in 1 ohm-cm silicon samples and agree closely with the four-point probe electrical resistivity measurement results whereas large discrepancies are observed in case of samples with resistivity > 1 ohm-cm (B concentration 1 ohm-cm. (author)

Synthesis, structure and magnetic properties of Fe-Gd nanocapsules coated with B2O3/H3BO3 and Fe3BO5+GdBO3

International Nuclear Information System (INIS)

Si, P.Z.; Brueck, E.; Zhang, Z.D.; Tegus, O.; Buschow, K.H.J.; Zhang, W.S.; Klaasse, J.C.P.; Boer, F.R. de

2004-01-01

Nanocapsules consisting of B 2 O 3 /H 3 BO 3 encapsulating Fe-Gd cores have been synthesized by an arc-discharge process using metal-boron alloys as cathode. Most of the nanocapsules have a well-constructed shell/core structure with a uniform B 2 O 3 /H 3 BO 3 shell. Heat-treatment induces reactions between the shell and the core, resulting in the formation of a Fe 3 BO 5 +GdBO 3 matrix embedded with Fe nanoparticles, reduction of the metallic-core size and decrease of the blocking temperature T B . Above T B , the magnetization curves plotted vs. H/T overlap and show zero coercivity. Below T B , the coercivity shows a linear dependence when plotted vs. T 1/2 . However, the coercivity-T 1/2 curve below 60 K has a different slope from that above 60 K, indicating the existence of two different magnetic phases in the nanocapsules. Different from bulk Fe 3 BO 5 , nanoscale Fe 3 BO 5 particles have a lower transition temperature to the weak-ferromagnetic state, and magnetic hysteresis is absent due to size effects

Structural and magnetic properties of Fe{sub 76}P{sub 5}(Si{sub 0.3}B{sub 0.5}C{sub 0.2}){sub 19} amorphous alloy

Energy Technology Data Exchange (ETDEWEB)

Lavorato, G.C. [INTECIN (FIUBA-CONICET), Paseo Colon 850, Capital Federal (Argentina); Dipartimento di Chimica IFM and NIS, Universita di Torino, Torino (Italy); Fiore, G. [Dipartimento di Chimica IFM and NIS, Universita di Torino, Torino (Italy); Tiberto, P. [INRIM, Electromagnetism Division, Torino (Italy); Baricco, M. [Dipartimento di Chimica IFM and NIS, Universita di Torino, Torino (Italy); Sirkin, H. [INTECIN (FIUBA-CONICET), Paseo Colon 850, Capital Federal (Argentina); Moya, J.A., E-mail: jmoya.fi.uba@gmail.com [GIM - IESIING, Universidad Catolica de Salta, INTECIN (UBA-CONICET) (Argentina)

2012-09-25

Highlights: Black-Right-Pointing-Pointer Fe{sub 76}P{sub 5}(Si{sub 0.3}B{sub 0.5}C{sub 0.2}){sub 19} amorphous alloy in ribbons and 1 mm and 2 mm rod samples. Black-Right-Pointing-Pointer Good glass forming ability with {Delta}T = 50 K and {gamma} = 0.37 and off-eutectic composition. Black-Right-Pointing-Pointer Good soft magnetic properties with magnetization saturation of 1.44 T. Black-Right-Pointing-Pointer Geometrical factors are the primary causes of magnetic losses in frequencies above 10 Hz. - Abstract: Recently, bulk amorphous alloys were produced in the Fe-B-Si-P-C system with high glass forming ability, excellent magnetic properties and the advantage of containing no expensive glass-forming elements, such as Ga, Y, Cr or Nb, having, therefore, a good perspective of commercial applications. In the present work, the Fe{sub 76}P{sub 5}(Si{sub 0.3}B{sub 0.5}C{sub 0.2}){sub 19} amorphous alloy prepared by two quenching techniques has been studied. Amorphous ribbons of about 40 {mu}m thick were obtained by planar-flow casting together with cylinders having 1 and 2 mm diameter produced by copper mold injection casting. All the samples appear fully amorphous after X-ray diffraction analysis. A comprehensive set of thermal data (glass, crystallization, melting and liquidus temperatures) were obtained as well as a description of the melting and solidification processes. Mechanical microhardness tests showed that the samples have a hardness of 9.7 {+-} 0.3 GPa. Good soft-magnetic properties were obtained, including a high magnetization of 1.44 T and a low coercivity (4.5 A/m for ribbons and 7.5 A/m in the case of 1 mm rod samples, both in as-cast state). Thermomagnetic studies showed a Curie temperature around 665 K and the precipitation of new magnetic phases upon temperatures of 1000 K. Furthermore, the frequency dependence of magnetic losses at a fixed peak induction was studied. The results suggest the occurrence of a fine magnetic domain structure in bulk

Exploring high-pressure FeB{sub 2}: Structural and electronic properties predictions

Energy Technology Data Exchange (ETDEWEB)

Harran, Ismail [School of Physical Science and Technology, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu, 610031 (China); Al Fashir University (Sudan); Wang, Hongyan [School of Physical Science and Technology, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu, 610031 (China); Chen, Yuanzheng, E-mail: cyz@calypso.org.cn [School of Physical Science and Technology, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu, 610031 (China); Jia, Mingzhen [School of Physical Science and Technology, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu, 610031 (China); Wu, Nannan [School of Mathematics, Physics and Biological Engineering, Inner Mongolia University of Science & Technology, Baotou, 014010 (China)

2016-09-05

The high pressure (HP) structural phase of FeB{sub 2} compound is investigated by using first-principles crystal structure prediction based on the CALYPSO technique. A thermodynamically stable phase of FeB{sub 2} with space group Imma is predicted at pressure above 225 GPa, which is characterized by a layered orthorhombic structure containing puckered graphite-like boron layers. Its electronic and mechanical properties are identified and analyzed. The feature of band structures favors the occurrence of superconductivity, whereas, the calculated Pugh's ratio reveals that the HP Imma structure exhibits ductile mechanical property. - Highlights: • The high pressure structural phase of FeB{sub 2} compound is firstly investigated by the CALYPSO technique. • A thermodynamically stable Imma phase of FeB{sub 2} is predicted at pressure above 225 GPa. • The Imma structure is characterized by a 2D boron network containing puckered graphite-like boron layers. • The band feature of Imma structure favors the occurrence of superconductivity. • The calculated Pugh's ratio suggests that the Imma structure exhibits ductile mechanical property.

Magnetic and thermal behaviour of the amorphous ferromagnet Fe79B16Si5

International Nuclear Information System (INIS)

Shaisha, E.E.; Bahgat, A.A.

1985-01-01

Spin waves in the amorphous ferromagnet Fe 79 B 16 Si 5 are studied by Moessbauer effect spectroscopy. The magnetic hyperfine field (MHF) is measured at the Fe sites of such a ferromagnet, which exhibits a temperature dependence of the form, H(T)/H(0) = (1 - BT/sup 3/2/ - CT/sup 5/2/), indicative of spin wave excitations in amorphous ferromagnets. The T/sup 3/2/ behaviour and the distribution of the exchange interactions are studied in detail as a function of the MHF. The spin wave excitations constant B/sub 3/2/ = BT/sub C//sup 3/2/ = 0.3 +- 0.05 and C/sub 5/2/ = CT/sub C//sup 5/2/ = 0.3 +- 0.05,Are obtained by fitting the experimental data, and where T/sub C/ = 670 K. The results sh=ow that the contribution of C/sub 5/2/ is extremely effective above 124 K, while the ratio C/sub 5/2//C/sub 3/2/ = 1.0 indicates that the present magnetic interaction is of long range order character. On the other hand, fluctuations of the exchange interaction constant are found to decrease with increasing temperature. Some information regarding the directions of the magnetic moments are obtained during the study of the magnetic anisotropy course. The values of the Einstein and Debye temperatures as measured from the thermal shift results are theta/sub E/ = 250 K and theta/sub D/ = 350 K,And from the Moessbauer factor measurements theta/sub E/ = 165 K and theta/sub D/ = 285 K. (autho=r)

Investigation of charges carrier density in phosphorus and boron doped SiNx:H layers for crystalline silicon solar cells

International Nuclear Information System (INIS)

Paviet-Salomon, B.; Gall, S.; Slaoui, A.

2013-01-01

Highlights: ► We investigate the properties of phosphorus and boron-doped silicon nitride films. ► Phosphorus-doped layers yield higher lifetimes than undoped ones. ► The fixed charges density decreases when increasing the films phosphorus content. ► Boron-doped films feature very low lifetimes. ► These doped layers are of particular interest for crystalline silicon solar cells. -- Abstract: Dielectric layers are of major importance in crystalline silicon solar cells processing, especially as anti-reflection coatings and for surface passivation purposes. In this paper we investigate the fixed charge densities (Q fix ) and the effective lifetimes (τ eff ) of phosphorus (P) and boron (B) doped silicon nitride layers deposited by plasma-enhanced chemical vapour deposition. P-doped layers exhibit a higher τ eff than standard undoped layers. In contrast, B-doped layers exhibit lower τ eff . A strong Q fix decrease is to be seen when increasing the P content within the film. Based on numerical simulations we also demonstrate that the passivation obtained with P- and B-doped layers are limited by the interface states rather than by the fixed charges

Microstructure and properties of MoSi2-MoB and MoSi2-Mo5Si3 molybdenum silicides

International Nuclear Information System (INIS)

Schneibel, J.H.; Sekhar, J.A.

2003-01-01

MoSi 2 -based intermetallics containing different volume fractions of MoB or Mo 5 Si 3 were fabricated by hot-pressing MoSi 2 , MoB, and Mo 5 Si 3 powders in vacuum. Both classes of alloys contained approximately 5 vol.% of dispersed silica phase. Additions of MoB or Mo 5 Si 3 caused the average grain size to decrease. The decrease in the grain size was typically accompanied by an increase in flexure strength, a decrease in the room temperature fracture toughness, and a decrease in the hot strength (compressive creep strength) measured around 1200 deg. C, except when the Mo 5 Si 3 effectively became the major phase. Oxidation measurements on the two classes of alloys were carried out in air. Both classes of alloys were protected from oxidation by an in-situ adherent scale that formed on exposure to high temperature. The scale, although not analyzed in detail, is commonly recognized in MoSi 2 containing materials as consisting mostly of SiO 2 . The MoB containing materials showed an increase in the scale thickness and the cyclic oxidation rate at 1400 deg. C when compared with pure MoSi 2 . However, in contrast with the pure MoSi 2 material, oxidation at 1400 deg. C began with a weight loss followed by a weight gain and the formation of the protective silica layer. The Mo 5 Si 3 containing materials experienced substantial initial weight losses followed by regions of small weight changes. Overall, the MoB and Mo 5 Si 3 additions to MoSi 2 tended to be detrimental for the mechanical and oxidative properties

Irradiation Effect of Argon Ion on Interfacial Structure Fe(2nm/Si(tsi=0.5-2 nm Multilayer thin Film

Directory of Open Access Journals (Sweden)

S. Purwanto

2010-04-01

Full Text Available Investigation includes formation of interfacial structure of Fe(2nm/Si(tSi= 0.5-2 nm multilayer thin film and the behavior of antiferromagnetic coupling between Fe layers due to Argon ion irradiation was investigated. [Fe(2nm/Si]30 multilayers (MLs with a thickness of Si spacer 0.5 - 2 nanometer were prepared on n-type (100 Si substrate by the helicon plasma sputtering method. Irradiation were performed using 400keV Ar ion to investigate the behavior of magnetic properties of the Fe/Si MLs. The magnetization measurements of Fe/Si MLs after 400keV Ar ion irradiation show the degradation of antiferromagnetic behavior of Fe layers depend on the ion doses. The Magnetoresistance (MR measurements using by Four Point Probe (FPP method also confirm that MR ratio decrease after ion irradiation. X-ray diffraction (XRD patterns indicate that the intensity of a satellite peak induced by a superlattice structure does not change within the range of ion dose. These results imply that the surface of interface structures after ion irradiation become rough although the layer structures are maintained. Therefore, it is considered that the MR properties of Fe/Si MLs also are due to the metallic superlattice structures such as Fe/Cr and Co/Cu MLs.

Stability of the high pressure phase Fe3S2 up to Earth's core pressures in the Fe-S-O and the Fe-S-Si systems

Science.gov (United States)

Zurkowski, C. C.; Chidester, B.; Davis, A.; Brauser, N.; Greenberg, E.; Prakapenka, V. B.; Campbell, A.

2017-12-01

Earth's core is comprised of an iron-nickel alloy that contains 5-15% of a light element component. The abundance and alloying capability of sulfur, silicon and oxygen in the bulk Earth make them important core alloy candidates; therefore, the high-pressure phase equilibria of the Fe-S-O and Fe-S-Si systems are relevant for understanding the possible chemistry of Earth's core. Previously, a Fe3S2 phase was recognized as a low-pressure intermediate phase in the Fe-FeS system that is stable from 14-21 GPa, but the structure of this phase has not been resolved. We report in-situ XRD and chemical analysis of recovered samples to further examine the stability and structure of Fe3S2 as it coexists with other phases in the Fe-S-O and Fe-S-Si systems. In situ high P-T synchrotron XRD experiments were conducted in the laser-heated diamond anvil cell to determine the equilibrium phases in Fe75S7O18 and Fe80S5Si15 compositions between 30 and 174 GPa and up to 3000 K. In the S,O-rich samples, an orthorhombic Fe3S2 phase coexists with hcp-Fe, Fe3S and FeO and undergoes two monoclinic distortions between 60 and 174 GPa. In the S,Si-rich samples, the orthorhombic Fe3S2 phase was observed up to 115 GPa. With increasing pressure, the Fe3S2 phase becomes stable to higher temperatures in both compositions, suggesting possible Fe3(S,O)2 or Fe3(S,Si)2 solid solutions. SEM analysis of a laser heated Fe75S7O18 sample recovered from 40 GPa and 1450 K confirms a Fe3(S,O)2 phase with O dissolved into the structure. Based on the current melting data in the Fe-S-O and Fe-S-Si systems, the Fe3(S,O)2 stability field intersects the solidus in the outer core and could be a possible liquidus phase in Fe,S,O-rich planetary cores, whereas Fe3S is the stable sulfide at outer core pressures in Fe,S,Si-rich systems.

57Fe Moessbauer study of amorphous and nanocrystalline Fe73.5Nb3Cu1Si13.5B9 after neutron irradiation

International Nuclear Information System (INIS)

Miglierini, M.; Sitek, J.; Szasz, Z.; Vitazek, K.

1994-01-01

57 Fe Moessbauer spectroscopy is used to study neutron irradiation induced changes in the short-range order of Fe 73.5 Nb 3 Cu 1 Si 13.5 B 9 alloy. The samples are investigated in both amorphous and nanocrystalline states. Neutron irradiation leads to an increase of the standard deviation of a hyperfine field distribution (HFD), implying rearrangement of the atoms towards disordering. Simultaneously, changes in the average value of the hyperfine field and a net magnetic moment position occur as a consequence of a spin reorientation, atom mixing and microscopic stress centres which are introduced by neutron irradiation. (orig.)

A room-temperature-operated Si LED with β-FeSi2 nanocrystals in the active layer: μW emission power at 1.5 μm

Science.gov (United States)

Shevlyagin, A. V.; Goroshko, D. L.; Chusovitin, E. A.; Balagan, S. A.; Dotsenko, S. A.; Galkin, K. N.; Galkin, N. G.; Shamirzaev, T. S.; Gutakovskii, A. K.; Latyshev, A. V.; Iinuma, M.; Terai, Y.

2017-03-01

This article describes the development of an Si-based light-emitting diode with β-FeSi2 nanocrystals embedded in the active layer. Favorable epitaxial conditions allow us to obtain a direct band gap type-I band alignment Si/β-FeSi2 nanocrystals/Si heterostructure with optical transition at a wavelength range of 1500-1550 nm at room temperature. Transmission electron microscopy data reveal strained, defect-free β-FeSi2 nanocrystals of diameter 6 and 25 nm embedded in the Si matrix. Intense electroluminescence was observed at a pumping current density as low as 0.7 A/cm2. The device reached an optical emission power of up to 25 μW at 9 A/cm2 with an external quantum efficiency of 0.009%. Watt-Ampere characteristic linearity suggests that the optical power margin of the light-emitting diode has not been exhausted. Band structure calculations explain the luminescence as being mainly due to radiative recombination in the large β-FeSi2 nanocrystals resulting from the realization of an indirect-to-direct band gap electronic configuration transformation arising from a favorable deformation of nanocrystals. The direct band gap structure and the measured short decay time of the luminescence of several tens of ns give rise to a fast operation speed for the device. Thus a method for developing a silicon-based photonic integrated circuit, combining complementary metal-oxide-semiconductor technology functionality and near-infrared light emission, is reported here.

Reactions between monolayer Fe and Si(001) surfaces

Energy Technology Data Exchange (ETDEWEB)

Hasegawa, M; Kobayashi, N; Hayashi, N [Electrotechnical Lab., Tsukuba, Ibaraki (Japan)

1997-03-01

Reactions between 1.5 monolayer(ML) Fe deposited on Si(001)-2x1 and -dihydride surfaces were studied in situ by reflection high-energy electron diffraction and time-of-flight ion scattering spectrometry with the use of 25 keV H ions. The reactions between Fe and Si which were successively deposited on Si(001)-dihydride surface were also studied. After the room temperature deposition Fe reacted with Si(001)-2x1 substrate resulting in the formation of polycrystalline Fe5Si3. By annealing to 560-650degC composite heteroepitaxial layer of both type A and type B {beta}-FeSi2 was formed. On the dihydride surface polycrystalline Fe was observed after 1.5ML Fe deposition at room temperature, and reaction between Fe and Si(001)-dihydride surface is not likely at room temperature. We observed 3D rough surface when we deposited only Fe layer on the dihydride surface and annealed above 700degC. The hydrogen termination of Si(001) surface prevents the deposited Fe from diffusing into the substrate below 500degC, however the annealing above 710degC leads to the diffusion. We obtained 2D ordered surface, which showed 3x3 RHEED pattern as referenced to the primitive unreconstructed Si(001) surface net, when we deposited 2.5ML Fe and 5.8ML Si successively onto Si(001)-dihydride surface and annealed to 470degC. (author)

Axial channeling of boron ions into silicon

International Nuclear Information System (INIS)

La Ferla, A.; Galvagno, G.; Raineri, V.; Setola, R.; Rimini, E.; Carnera, A.; Gasparotto, A.

1992-01-01

Channeling boron implants were performed into (100) and (110) silicon substrates in the energy range 80-700 keV. The dose ranged between 3.5x10 11 and 1x10 15 atoms/cm 2 . The axial channeling concentration profiles of implanted B + were compared with that obtained for incidence along the random direction of the crystal and with that obtained by implantation in amorphous silicon. The electrical and chemical boron distributions were obtained by spreading resistance and secondary ion mass spectrometry measurements, respectively. The inelastic stopping power, S c , was extracted from the experimental maximum ranges for the [100] and [110] axis. The energy dependence of the electronic stopping power is given by S e = KE p with p [100] = 0.469±0.010 and p [110] = 0.554±0.004. Simulations obtained by the MARLOWE code, using the Oen-Robinson impact parameter dependent formula, for the electronic energy loss reproduce quite well the experimental depth profiles. (orig.)

Note: Resonance magnetoelectric interactions in laminate of FeCuNbSiB and multilayer piezoelectric stack for magnetic sensor

Science.gov (United States)

Li, Jianqiang; Lu, Caijiang; Xu, Changbao; Zhong, Ming

2015-09-01

This paper develops a simple miniature magnetoelectric (ME) laminate FeCuNbSiB/PZT-stack made up of magnetostrictive Fe73.5Cu1Nb3Si13.5B9 (FeCuNbSiB) foils and piezoelectric Pb(Zr, Ti)O3 (PZT) multilayer stack vibrator. Resonant ME interactions of FeCuNbSiB/PZT-stack with different layers of FeCuNbSiB foil (L) are investigated in detail. The experimental results show that the ME voltage coefficient reaches maximum value of 141.5 (V/cm Oe) for FeCuNbSiB/PZT-stack with L = 6. The AC-magnetic sensitivities can reach 524.29 mV/Oe and 1.8 mV/Oe under resonance 91.6 kHz and off-resonance 1 kHz, respectively. The FeCuNbSiB/PZT-stack can distinguish small dc-magnetic field of ˜9 nT. The results indicate that the proposed ME composites are very promising for the cheap room-temperature magnetic field sensing technology.

A new high-pressure phase of Fe2SiO4 and the relationship between spin and structural transitions

Science.gov (United States)

Yamanaka, T.; Kyono, A.; Nakamoto, Y.; Kharlamova, S. A.; Struzhkin, V. V.; Gramsch, S.; Mao, H.; Hemley, R. J.

2013-12-01

O4. This new high-pressure phase reversibly transforms to the spinel structure under decompression. A Martensitic transformation of spinel slabs with translation vector [1/8 1/8 1/8] generates the I-Fe2SiO4 structure. The transition is induced by atomic displacements in the spinel structure, which generates the orthorhombic distortion resulting in I-Fe2SiO4 arrangement. A topotactic relation between spinel and I-Fe2SiO4 is suggested as the origin of this phase transition: Fe2SiO4 spinel at 34.8 GPa, Fd m, z = 8, a(spinel)= 7.894 Å I-Fe2SiO4 at 54.6 GPa, Imma,, z = 4, a= 5.543(1)Å, b=6.032(4)Å, c= 7.201(5)Å a = b = d(spnel 110) = 0.707107a (spinel) c= c(spinel) Compression along the [001] direction of the spinel structure and simultaneous elongation along the [110] direction results in the I-Fe2SiO4 arrangement. This transition is induced by the 20% shrinkage of ionic radius of Fe2+in the octahedral site at the low spin state.

Effect of rapid solidification on the microstructure and mechanical properties of hot-pressed Al-20Si-5Fe alloys

International Nuclear Information System (INIS)

Rajabi, M.; Vahidi, M.; Simchi, A.; Davami, P.

2009-01-01

The aim of this work is to study the effect of cooling rate and subsequent hot consolidation on the microstructural features and mechanical strength of Al-20Si-5Fe-2X (X = Cu, Ni and Cr) alloys. Powder and ribbons were produced by gas atomization and melt spinning processes at two different cooling rates of 1 x 10 5 K/s and 5 x 10 7 K/s. The microstructure of the products was examined using optical microscopy, scanning electron microscopy, transmission electron microscopy, and X-ray diffraction. The particles were consolidated by hot pressing at 400 deg. C/250 MPa/1 h under a high purity argon atmosphere and the microstructure, hardness and compressive strength of the compacts were evaluated. Results showed a profound effect of the cooling rate, consolidation stage, and transition metals on the microstructure and mechanical strength of Al-20Si-5Fe alloys. While microstructural refining was obtained at both cooling rates, the microstructure of the atomized powder exhibited the formation of fine primary silicon (∼ 1 μm), eutectic Al-Si phase with eutectic spacing of ∼ 300 nm, and δ-iron intermetallic. Supersaturated Al matrix containing 5-7 at.% silicon and nanometric Si precipitates (20-40 nm) were determined in the microstructure of the melt-spun ribbons. The hot consolidation resulted in coarsening of Si particles in the atomized particles, and precipitation of Si and Fe-containing intermetallics from the supersaturated Al matrix in the ribbons. The consolidated ribbons exhibited higher mechanical strength compared to the atomized powders, particularly at elevated temperatures. The positive influence of the transition metals on the thermal stability of the Al-20Si-5Fe alloy was noticed, particularly in the Ni-containing alloy.

Activation behavior of boron implanted poly-Si on glass substrate

International Nuclear Information System (INIS)

Furuta, M.; Shimamura, K.; Tsubokawa, H.; Tokushige, K.; Furuta, H.; Hirao, T.

2010-01-01

The activation behavior of boron (B) implanted poly-Si films on glass substrates has been investigated. The effect of B dose and annealing temperature on crystal defects and electrical properties of the films were evaluated by Raman spectroscopy and Hall measurement. It was found that the maximum activation ratio of the film with B dose of 1 x 10 15 cm -2 was obtained when Raman peak associated with disordered amorphous silicon disappeared. However, reverse anneal was observed in the film when the annealing temperature further increased. The results from secondary ion mass spectrometry and Hall measurement revealed that B segregation at the top and bottom interface and deactivation of B substitutional occurred simultaneously in the high-dose specimens when the annealing temperature increased from 600 to 750 o C.

Photoelectrochemical Characterization of Sprayed α-Fe2O3 Thin Films: Influence of Si Doping and SnO2 Interfacial Layer

Directory of Open Access Journals (Sweden)

Yongqi Liang

2008-01-01

Full Text Available α-Fe2O3 thin film photoanodes for solar water splitting were prepared by spray pyrolysis of Fe(AcAc3. The donor density in the Fe2O3 films could be tuned between 1017–1020 cm-3 by doping with silicon. By depositing a 5 nm SnO2 interfacial layer between the Fe2O3 films and the transparent conducting substrates, both the reproducibility and the photocurrent can be enhanced. The effects of Si doping and the presence of the SnO2 interfacial layer were systematically studied. The highest photoresponse is obtained for Fe2O3 doped with 0.2% Si, resulting in a photocurrent of 0.37 mA/cm2 at 1.23 VRHE in a 1.0 M KOH solution under 80 mW/cm2 AM1.5 illumination.

Structural Transformation in Fe73.5Nb3Cu1Si15.5B7 Amorphous Alloy Induced by Laser Heating

Science.gov (United States)

Nykyruy, Yu. S.; Mudry, S. I.; Kulyk, Yu. O.; Zhovneruk, S. V.

2018-03-01

The effect of continuous laser irradiation (λ = 1.06 μm) with laser power of 45 W on the structure of Fe73.5Nb3Cu1Si15.5B7 amorphous alloy has been studied using X-ray diffraction and SEM methods. The sample of the ribbon has been placed at a distance from the focal plane of the lens, so a laser beam has been defocused and the diameter of laser spot on the ribbon surface has been about 10 mm. An exposure time τ varied within interval 0.25-0.70 s. Under such conditions structural transformation processes, which depend on the exposure time, have occurred in an irradiated zone. Crystallization process has started at τ = 0.35 s with the formation of α-Fe(Si) nanocrystalline phase, while complete crystallization has occurred at τ = 0.55 s with formation of two nanocrystalline phases: α-Fe(Si) and a hexagonal H-phase.

Amorphous and nanocrystalline fraction calculus for the Fe{sub 73.5}Si{sub 3.5}Ge{sub 10}Nb{sub 3}B{sub 9}Cu{sub 1} alloy

Energy Technology Data Exchange (ETDEWEB)

Muraca, D. [Laboratorio de Solidos Amorfos, Departamento de Fisica, Facultad de Ingenieria, Universidad de Buenos Aires (Argentina); Moya, J. [Laboratorio de Solidos Amorfos, Departamento de Fisica, Facultad de Ingenieria, Universidad de Buenos Aires (Argentina); Carrera del Investigador, CONICET (Argentina); Cremaschi, V.J. [Laboratorio de Solidos Amorfos, Departamento de Fisica, Facultad de Ingenieria, Universidad de Buenos Aires (Argentina) and Carrera del Investigador, CONICET (Argentina)]. E-mail: vcremas@fi.uba.ar; Sirkin, H.R.M. [Laboratorio de Solidos Amorfos, Departamento de Fisica, Facultad de Ingenieria, Universidad de Buenos Aires (Argentina); Carrera del Investigador, CONICET (Argentina)

2007-09-01

We studied the relationship between the saturation magnetization (M {sub S}) of the Fe{sub 73.5}Si{sub 3.5}Ge{sub 10}Nb{sub 3}B{sub 9}Cu{sub 1} alloy and its nanocrystalline structure. Amorphous ribbons obtained by the melt spinning technique were heat-treated for 1 h at different temperatures. The optimal treatment to obtain a homogeneous structure of Fe{sub 3}(Si,Ge) nanocrystals with a grain size of around 10 nm embedded in an amorphous matrix involved heating at 540 C for 1 h. We calculated the magnetic contribution of the nanocrystals to the heat treated alloy using a linear model and measured the M {sub S} of the Fe{sub 73.5}Si{sub 3.5}Ge{sub 10}Nb{sub 3}B{sub 9}Cu{sub 1} nanocrystalline and of an amorphous alloy of the same composition of the amorphous matrix: Fe{sub 58}Si{sub 0.5}Ge{sub 3.5}Cu{sub 3}Nb{sub 9}B{sub 26}. Using experimental data and theoretical calculations, we obtained the amorphous and crystalline fraction of the heat-treated ribbons.

Incorporation of the Fe3O4 and SiO2 nanoparticles in epoxy-modified silicone resin as the coating for soft magnetic composites with enhanced performance

Science.gov (United States)

Luo, Dahao; Wu, Chen; Yan, Mi

2018-04-01

Three inorganic-organic hybrids have been designed by incorporating epoxy-modified silicone resin (ESR) with SiO2, Fe3O4 and their mixture in the application as the coating of Fe soft magnetic composites (SMCs). The introduced SiO2 nanoparticles are well dispersed in the ESR, while the Fe3O4 tends to agglomerate or even separate from the ESR. Simultaneous addition of the SiO2 and Fe3O4 gives rise to satisfactory distribution of both nanoparticles and optimized magnetic performance of the SMCs with high permeability (124.6) and low loss (807.8 mW/cm3). On one hand, introduction of the ferromagnetic Fe3O4 reduces the magnetic dilution effect, which is beneficial for improved magnetization and permeability. On the other hand, SiO2 incorporation prevents the agglomeration of the Fe3O4 nanoparticles and gives rise to increased electrical resistivity for reduced core loss as well as enhanced mechanical strength of the SMCs.

Deposition of multicomponent chromium carbide coatings using a non-conventional source of chromium and silicon with micro-additions of boron

Energy Technology Data Exchange (ETDEWEB)

Gonzalez Ruiz, Jesus Eduardo, E-mail: jesus.gonzalez@biomat.uh.cu [Biomaterials Center, University of Havana (Cuba); Rodriguez Cristo, Alejandro [Mechanical Plants Company, Road of the Sub-Plan, Farm La Cana, Santa Clara, Villa Clara (Cuba); Ramos, Adrian Paz [Department of Chemistry, Universite de Montreal, Quebec (Canada); Quintana Puchol, Rafael [Welding Research Center, Central University Marta Abreu of Las Villas, Villa Clara (Cuba)

2017-01-15

The chromium carbide coatings are widely used in the mechanical industry due to its corrosion resistance and mechanical properties. In this work, we evaluated a new source of chromium and silicon with micro-additions of boron on the deposition of multi-component coatings of chromium carbides in W108 steel. The coatings were obtained by the pack cementation method, using a simultaneous deposition at 1000 deg for 4 hours. The coatings were analyzed by X-ray diffraction, X-ray energy dispersive spectroscopy, optical microscopy, microhardness test method and pin-on-disc wear test. It was found that the coatings formed on W108 steel were mainly constituted by (Cr,Fe){sub 23}C{sub 6} , (Cr,Fe){sub 7} C{sub 3} , Cr{sub 5-x}Si{sub 3-x} C{sub x+z}, Cr{sub 3} B{sub 0,44}C{sub 1,4} and (or) Cr{sub 7} BC{sub 4} . The carbide layers showed thicknesses between 14 and 15 μm and maximum values of microhardness between 15.8 and 18.8 GPa. Also, the micro-additions of boron to the mixtures showed statistically significant influence on the thickness, microhardness and abrasive wear resistance of the carbide coatings. (author)

Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride

International Nuclear Information System (INIS)

Wang, Hongzhe; Chen, Chao; Pan, Miao; Sun, Yiling; Yang, Xi

2015-01-01

Graphical abstract: - Highlights: • The phosphorus-doped SiN x with negative fixed charge was deposited by PECVD. • The increase of lifetime was observed on P-doped SiN x passivated Si under illumination. • The enhancement of lifetime was caused by the increase of negative fixed charges. - Abstract: This study reports a doubling of the effective minority carrier lifetime under light soaking conditions, observed in a boron-doped p-type Czochralski grown silicon wafer passivated by a phosphorus-doped silicon nitride thin film. The analysis of capacitance–voltage curves revealed that the fixed charge in this phosphorus-doped silicon nitride film was negative, which was unlike the well-known positive fixed charges observed in traditional undoped silicon nitride. The analysis results revealed that the enhancement phenomenon of minority carrier lifetime was caused by the abrupt increase in the density of negative fixed charge (from 7.2 × 10 11 to 1.2 × 10 12 cm −2 ) after light soaking.

β-FeSi2 films prepared on 6H-SiC substrates by magnetron sputtering

Science.gov (United States)

Hong, Li; Hongbin, Pu; Chunlei, Zheng; Zhiming, Chen

2015-06-01

β-FeSi2 thin films have been successfully prepared by magnetron sputtering and post rapid thermal annealing method on 6H-SiC (0001) substrates using a FeSi2 target and a Si target. X-ray diffraction (XRD) and Raman spectroscopy are applied to analyze the formation of β-FeSi2 films. XRD spectra reveal that the amorphous FeSi2 films are transformed to β-FeSi2 phase as the annealing temperature is increased from 500 to 900 °C for 5 min and the optimal annealing temperature is 900 °C. The formation of β-FeSi2 is also confirmed by Raman spectroscopy. Scanning electron microscope (SEM) observations indicate that the film is flat, relatively compact and the interface between β-FeSi2 and 6H-SiC is clear. Atomic force microscope (AFM) measurements demonstrate that the surface roughness confirmed by the root mean square (RMS) of the β-FeSi2 film is 0.87 nm. Near-infrared spectrophotometer observation shows that the absorption coefficient is of the order of 105 cm-1 and the optical band-gap of the β-FeSi2 film is 0.88 eV. The β-FeSi2 film with high crystal quality is fabricated by co-sputtering a FeSi2 target and a Si target for 60 min and annealing at 900 °C for 5 min. Project supported by the National Natural Science Foundation of China (No. 51177134) and the Natural Science Basic Research Plan in Shaanxi Province of China (No. 2015JM6286).

Study of ion beam sputtered Fe/Si interfaces as a function of Si layer thickness

Science.gov (United States)

Kumar, Anil; Brajpuriya, Ranjeet; Singh, Priti

2018-01-01

The exchange interaction in metal/semiconductor interfaces is far from being completely understood. Therefore, in this paper, we have investigated the nature of silicon on the Fe interface in the ion beam deposited Fe/Si/Fe trilayers keeping the thickness of the Fe layers fixed at 3 nm and varying the thickness of the silicon sandwich layer from 1.5 nm to 4 nm. Grazing incidence x-ray diffraction and atomic force microscopy techniques were used, respectively, to study the structural and morphological changes in the deposited films as a function of layer thickness. The structural studies show silicide formation at the interfaces during deposition and better crystalline structure of Fe layers at a lower spacer layer thickness. The magnetization behavior was investigated using magneto-optical Kerr effect, which clearly shows that coupling between the ferromagnetic layers is highly influenced by the semiconductor spacer layer thickness. A strong antiferromagnetic coupling was observed for a value of tSi = 2.5 nm but above this value an unexpected behavior of hysteresis loop (step like) with two coercivity values is recorded. For spacer layer thickness greater than 2.5 nm, an elemental amorphous Si layer starts to appear in the spacer layer in addition to the silicide layer at the interfaces. It is observed that in the trilayer structure, Fe layers consist of various stacks, viz., Si doped Fe layers, ferromagnetic silicide layer, and nonmagnetic silicide layer at the interfaces. The two phase hysteresis loop is explained on the basis of magnetization reversal of two ferromagnetic layers, independent of each other, with different coercivities. X-ray photo electron spectroscopy technique was also used to study interfaces characteristics as a function of tSi.

The corrosion behaviour and structure of amorphous and thermally treated Fe-B-Si alloys

International Nuclear Information System (INIS)

Raicheff, R.; Zaprianova, V.; Petrova, E.

2003-01-01

The corrosion behaviour of magnetic amorphous alloys Fe 78 B 13 Si 9 , Fe 81 B 13 Si 4 C 2 and Fe 67 Co 18 Bi 4 S 1 obtained by rapid quenching from the melts are investigated in a model corrosive environment of 1N H 2 SO 4 . The structure of the alloys, is, characterized by DTA, SEM, TEM, X-ray and electron diffraction techniques. The dissolution kinetics of the,alloys is studied using gravimetric and electrochemical polarization measurements. It is established that the corrosion rate of the amorphous Fe 67 Co 18 Bt 4 S 1 alloy is up to 50 times lower than that of Fe 78 Bi 3 Si 9 alloy and the addition of cobalt leads to a considerable reduction of the rates of both partial corrosion reactions, while the addition of carbon results only in a moderate decrease (2-3 times) of the corrosion rate. It is also shown that the crystallization of the amorphous Fe 78 B 13 Si 9 alloy (at 700 o C for 3 h) leads to formation of multiphase structure consisting of crystalline phases α-Fe and Fe 3 (B,Si). After crystallization an increase of the rate of both hydrogen evolution and anodic dissolution reactions is observed which results in a considerable (an order of magnitude) increase of the corrosion rate of the alloy. (Original)

Effect of boron additions on phase formation and magnetic properties of TbCu7-type melt spun SmFe ribbons

International Nuclear Information System (INIS)

Zheng, Chuanjiang; Yu, Dunbo; Li, Kuoshe; Luo, Yang; Jin, Jinling; Lu, Shuo; Li, Hongwei; Mao, Yongjun; Quan, Ningtao

2016-01-01

Melt spun ribbons of a series of SmFe 12 B x (x=0.0, 0.5, 0.75, 1.0, 1.25, and 1.5) have been prepared by the melt spinning technique. Sm–Fe–B melt spun ribbons with single phase TbCu 7 -type structure were prepared from the SmFe 12 B x (x=0.5, 0.75, and 1.0) alloys at the surface velocity around 40 m/s. The addition of boron not only inhibits the appearance of soft magnetic phase α-Fe, but also enhances the ability of amorphous formation for melt spun Sm–Fe ribbons. The concentration of boron atoms, however, exceeds the limit of the solubility (x>1.0) of Sm–Fe alloys, which does not impede the appearance of α-Fe but accelerates the formation of metastable phase Sm 2 Fe 23 B 3 that is unfavorable to their magnetic properties. Moreover, it is found that the addition of boron whose concentration is 0.0≤x≤0.75 can stabilize the metastable TbCu 7 -type structure because of the increase of the lattice parameter ratio c/a. The magnetic properties of as-annealed SmFe 12 B 1.0 melt spun ribbons with an energy product of 2.19MGOe, a coercivity of 2.36 kOe and a remanence of 4.8 kGs have been achieved. The microstructural characteristics of as-annealed melt spun SmFe 12 and SmFe 12 B 1.0 ribbons have been discussed as well. The following sequence of the hyperfine field H(6l)2e) and the isomer shift δ(3g)<δ(6l)<δ(2e) is obtained by the analysis of 57 Fe Mossbauer spectra. As the boron content is added gradually, the hyperfine fields of 3g and 6l sites increase slightly due to the competition of the positive electron polarization and the negative polarization. However, the value of H(2e) is almost constant. - Highlights: • A certain amount of boron additions can inhibit the emergence of the soft magnetic phase α-Fe and improve the ability of amorphous formation. • There is a solubility limit of boron atom within melt spun Sm–Fe alloys with TbCu 7 -type structure, and the metastable phase Sm 2 Fe 23 B 3 will appear when the content of boron

Effect of Fe substitution on the structure and magnetocaloric effect of Mn{sub 5−x}Fe{sub x}GeSi{sub 2} alloys

Energy Technology Data Exchange (ETDEWEB)

Sun, Y.W.; Yan, J.L., E-mail: yjl@gxu.edu.cn; Feng, E.L.; Tang, G.W.; Zhou, K.W.

2017-01-15

The structure and magnetocaloric effect of Mn{sub 5−x}Fe{sub x}GeSi{sub 2} compounds were studied. Analysis of X-ray powder diffraction and energy dispersive X-Ray spectroscopy revealed that Mn{sub 5−x}Fe{sub x}GeSi{sub 2} alloys with x<1 crystallize in the Mn{sub 5}Si{sub 3}-type structure (space group P6{sub 3}/mcm), maintaining the structure of Mn{sub 5}Ge{sub 3}; and alloys with x=1.5 and 2 consist of the major Mn{sub 5}Si{sub 3}-type phase and the minor Ni{sub 2}In-type phase (space group P6{sub 3}/mmc). The results of Rietveld refinement showed that the cell parameters for the Mn{sub 5}Si{sub 3}-type phase decrease with increasing Fe content. The positive slopes in Arrott plots indicate that a second-order ferromagnetic to paramagnetic transition occurs. The Curie temperature increases with increasing Fe content from 182 K for x=0.6 to 224 K for x=2. The maximum magnetic entropy change of 3.7 J/(kg K) for x=0.8 was found under a magnetic field change of 0–20 kOe. - Highlights: • Mn{sub 5−x}Fe{sub x}GeSi{sub 2} alloys with x<1 crystallize in the hexagonal Mn{sub 5}Si{sub 3}-type structure. Alloys with x=1.5 and 2 consist of a major Mn{sub 5}Si{sub 3}-type phase and a secondary Ni{sub 2}In-type phase. • The cell parameters decrease and the Curie temperature increases with increasing x in Mn{sub 5−x}Fe{sub x}GeSi{sub 2} alloys. • The maximum -∆S{sub M} of 3.7 J/(kg K) and RCP of 211 J/kg for x=0.8 was found under a magnetic field change of 0–20 kOe.

Amorphous Si layers co-doped with B and Mn: Thin film growth and steering of magnetic properties

International Nuclear Information System (INIS)

Drera, G.; Mozzati, M.C.; Colombi, P.; Salvinelli, G.; Pagliara, S.; Visentin, D.; Sangaletti, L.

2015-01-01

Amorphous silicon thin films co-doped with manganese (5% at.) and boron (1.8% at.) have been prepared by RF sputtering on Al 2 O 3 substrates held at room temperature (RT). The films, with an average thickness of about 0.9 μm, were carefully characterized by micro-Raman and X-ray photoemission spectroscopies. A ferromagnetic (FM) behavior up to RT was observed. In order to discuss and possibly rule out extrinsic effects usually related to segregations of ferromagnetic impurities in the samples, magnetization measurements were carried out on the Al 2 O 3 substrates, as well as on Si:B and Si:Mn films grown with the same RF sputtering system. Only the Si:B:Mn films displayed a FM behavior up to RT. Since amorphous films doped with Mn alone did not display any signature of FM ordering, boron co-doping results to be crucial for the onset of the FM behavior. The conductivity of the samples is not affected by boron doping that, therefore, does not appear to significantly contribute to a possible carrier-mediated FM interaction between Mn ions by supplying extra charges to the system. On this basis, the capability of B to hinder the quenching of the Mn 3d magnetic moments has also to be regarded as a possible role of this co-dopant in the observed magnetization. - Highlights: • We successfully deposited amorphous silicon thin films co-doped with Mn and B. • Structural, electronic, and magnetic properties have been carefully characterized. • A ferromagnetic behavior up to room temperature was detected. • The extrinsic origin of magnetism is excluded. • Boron can play a relevant role to avoid quenching of magnetic moment in Mn ions

Amorphous Si layers co-doped with B and Mn: Thin film growth and steering of magnetic properties

Energy Technology Data Exchange (ETDEWEB)

Drera, G. [I-LAMP, Dipartimento di Matematica e Fisica, Università Cattolica del Sacro Cuore, Via dei Musei 41, 25121 Brescia (Italy); Mozzati, M.C. [CNISM, Dipartimento di Fisica, Università di Pavia, Via Bassi 6, 27100 Pavia (Italy); Colombi, P. [CSMT Gestione s.c.a.r.l, Via Branze 45, 25123 Brescia (Italy); Salvinelli, G.; Pagliara, S.; Visentin, D. [I-LAMP, Dipartimento di Matematica e Fisica, Università Cattolica del Sacro Cuore, Via dei Musei 41, 25121 Brescia (Italy); Sangaletti, L., E-mail: sangalet@dmf.unicatt.it [I-LAMP, Dipartimento di Matematica e Fisica, Università Cattolica del Sacro Cuore, Via dei Musei 41, 25121 Brescia (Italy)

2015-09-01

Amorphous silicon thin films co-doped with manganese (5% at.) and boron (1.8% at.) have been prepared by RF sputtering on Al{sub 2}O{sub 3} substrates held at room temperature (RT). The films, with an average thickness of about 0.9 μm, were carefully characterized by micro-Raman and X-ray photoemission spectroscopies. A ferromagnetic (FM) behavior up to RT was observed. In order to discuss and possibly rule out extrinsic effects usually related to segregations of ferromagnetic impurities in the samples, magnetization measurements were carried out on the Al{sub 2}O{sub 3} substrates, as well as on Si:B and Si:Mn films grown with the same RF sputtering system. Only the Si:B:Mn films displayed a FM behavior up to RT. Since amorphous films doped with Mn alone did not display any signature of FM ordering, boron co-doping results to be crucial for the onset of the FM behavior. The conductivity of the samples is not affected by boron doping that, therefore, does not appear to significantly contribute to a possible carrier-mediated FM interaction between Mn ions by supplying extra charges to the system. On this basis, the capability of B to hinder the quenching of the Mn 3d magnetic moments has also to be regarded as a possible role of this co-dopant in the observed magnetization. - Highlights: • We successfully deposited amorphous silicon thin films co-doped with Mn and B. • Structural, electronic, and magnetic properties have been carefully characterized. • A ferromagnetic behavior up to room temperature was detected. • The extrinsic origin of magnetism is excluded. • Boron can play a relevant role to avoid quenching of magnetic moment in Mn ions.

Preparation and properties of bisphenol-F based boron-phenolic resin/modified silicon nitride composites and their usage as binders for grinding wheels

International Nuclear Information System (INIS)

Lin, Chun-Te; Lee, Hsun-Tsing; Chen, Jem-Kun

2015-01-01

Highlights: • Bisphenol-F based boron-phenolic resins (B-BPF) with B−O bonds were synthesized. • The modified silicon nitride (m-SiN) was well dispersed and adhered in the B-BPF. • B-BPF/m-SiN composites have good thermal resistance and mechanical properties. • The grinding wheels bound by B-BPF/m-SiN have excellent grinding quality. - Abstract: In this study, phenolic resins based on bisphenol-F (BPF) were synthesized. Besides, ammonium borate was added in the synthesis process of BPF to form the bisphenol-F based boron-phenolic resins (B-BPF). The glass transition temperature, thermal resistance, flexural strength and hardness of B-BPF are respectively higher than those of BPF. This is due to the presence of new cross-link B−O bonds in the B-BPF. In addition, the 3-aminopropyltriethoxysilane modified silicon nitride powders (m-SiN) were fully mixed with B-BPF to form the B-BPF/m-SiN composites. The thermal resistance and mechanical properties of the B-BPF/m-SiN are promoted by the well-dispersed and well-adhered m-SiN in these novel polymer/ceramics composites. The results of grinding experiments indicate that the grinding wheels bound by the B-BPF/m-SiN have better grinding quality than those bound by the BPF. Thus the B-BPF/m-SiN composites are better binding media than the BPF resins

Magneto-Impedance behavior of Co-Fe-Nb-Si-B-based ribbons

Energy Technology Data Exchange (ETDEWEB)

Sarkar, Partha; Mohanta, O.; Pal, S.K.; Panda, A.K. [National Metallurgical Laboratory, Council of Scientific and Industrial Research, Jamshedpur 831007 (India); Mitra, A., E-mail: amitra@nmlindia.or [National Metallurgical Laboratory, Council of Scientific and Industrial Research, Jamshedpur 831007 (India)

2010-04-15

The giant magneto-impedance of melt spun Co{sub x}Fe{sub 72-x}Nb{sub 4}Si{sub 4}B{sub 20}(x=10, 20, 36, 50) amorphous and nanostructured ribbons have been investigated. Alloys have been optimized at the driving current amplitude, frequency and found that amorphous ribbon of nominal composition of Co{sub 36}Fe{sub 36}Nb{sub 4}Si{sub 4}B{sub 20} shown maximum GMI ratio of 13%. The behaviour of the driving current amplitude on the GMI behaviour was studied and the sample was optimized for driving current amplitude, I{sub ac}=10 mA. The frequency dependence of the GMI behaviour was studied for the ribbon sample Co{sub 36}Fe{sub 36}Nb{sub 4}Si{sub 4}B{sub 20} at frequency in the range of 100 kHz-1.2 MHz of the optimized driving current amplitude and it was found that the sample showed the maximum GMI behaviour at f=700 kHz. The optimized samples were Joule heated at the current density J=0-35 A/m{sup 2} for a period of 1 min. The GMI ratio initially increased then progressively deteriorated with J, but after a certain range it shows up to 16% of improvement in the magneto-impedance value due the increase of nanocrystalline volume fraction. The asymmetry in the GMI profile was observed for the sample Joule heated at J=1-5 A/m{sup 2} for 1 min.

Boron diffusion in Ge+ premorphized and BF2 implanted Si(001)

International Nuclear Information System (INIS)

Zou, L.F.; Acosta-Ortiz, S.E.; Zou, L.X.; Regalado, L.E.; Sun, D.Z.; Wang, Z.G.

1998-01-01

The annealing behavior of Si implanted with Ge and then BF 2 has been characterized by double crystal X-ray diffraction (DCXRD) and secondary ion mass spectroscopy (SIMS). The results show that annealing at 600 Centigrade for 60 minutes can only remove a little damage induced by implantation and nearly no redistribution of Ge and B atoms has occurred during the annealing. The initial crystallinity of Si is fully recovered after annealing at 950 Centigrade for 60 minutes and accompanied by Ge diffusion. Very shallow boron junction depth has been formed. When annealing temperature rises to 1050 Centigrade, B diffusion enhances, which leads to a deep diffusion and good distribution of B atoms into the Si substrate. The X-ray diffraction (004) rocking curves from the samples annealed at 1050 Centigrade for 60 minutes display two Si Ge peaks, which may be related to the B concentration profiles. (Author)

Clinical evaluation of neodymium-iron-boron (Ne2Fe14B) rare earth magnets in the treatment of mid line diastemas

Science.gov (United States)

Manoj-Kumar, Mitta; Gowri-Sankar, Singaraju; Chaitanya, Nellore; Vivek-Reddy, Ganugapanta; Venkatesh, Nettam

2016-01-01

Background To evaluate the closure of midline diastema using the Neodymium-Iron-Boron magnets and to compare the treatment duration of midline diastemas with the use of magnets compared to regular orthodontic treatment. Material and Methods Thirty patients with age group 12 to 30 years with the midline diastema ranging from 0.5 to 3mm were selected. These patients were divided into two groups. Diastema closure in one group was accomplished by conventional method, in other group was done with Ne2Fe14B magnets. These magnets were fitted to the labial surfaces of the maxillary central incisors such a way that the opposite poles of the magnets face each other. At each appointment, study models and radiographs were taken for study subjects and the midline diastema was measured using digital vernier calipers on the study models obtained. Descriptive statistics carried out using Paired t-test. Results Subjects treated with Ne2Fe14B magnets showed a significant difference compared to fixed orthodontic appliance subjects with respect to time of closure, rate of space closure and incisal inclination. Significant difference between 2 groups with reduction of 64.6 days in time to diastema closure in subjects treated with Ne2Fe14B magnets (Pclosure of mid line diastema in less duration of time. Key words:Midline diastema, Ne2Fe14B magnets, rare earth magnets, space closure. PMID:27034757

Bias voltage dependence of magnetic tunnel junctions comprising amorphous ferromagnetic CoFeSiB layer with double barriers

International Nuclear Information System (INIS)

Yim, H.I.; Lee, S.Y.; Hwang, J.Y.; Rhee, J.R.; Chun, B.S.; Wang, K.L.; Kim, Y.K.; Kim, T.W.; Lee, S.S.; Hwang, D.G.

2008-01-01

Double-barrier magnetic tunnel junctions (DMTJs) with and without an amorphous ferromagnetic material such as CoFeSiB 10, CoFe 5/CoFeSiB 5, and CoFe 10 (nm) were prepared and compared to investigate the bias voltage dependence of the tunneling magnetoresistance (TMR) ratio. Typical DMTJ structures were Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO x /free layer 10/AlO x /CoFe 7/IrMn 10/Ru 60 (in nanometers). The interlayer coupling field and the normalized TMR ratios at the applied voltages of +0.4 and -0.4 V of the amorphous CoFeSiB free-layer DMTJ offer lower and higher values than that of the polycrystalline CoFe free-layer DMTJ, respectively. An amorphous ferromagnetic CoFeSiB layer improves the interface roughness of the free layer/tunnel barrier and, as a result, the interlayer coupling field and bias voltage dependence of the TMR ratio are suppressed at a given voltage. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Ce-didymium-Fe-B sintered permanent magnets

International Nuclear Information System (INIS)

Homma, M.; Okada, M.; Sugimoto, S.

1985-01-01

Present works report the development of the low cost R-Fe-B permanent magnets. The best magnetic properties obtained in this studies are Br=13.5 kG, iHc=10.2 kOe and (BH)max=40 MGOe with an Fe-33.5wt%(5Ce-Didymium)-1wt% B alloy. Topics considered in this paper include cerium alloys, boron alloys, fabrication, capitalized cost, iron alloys, permanent magnets, and magnetic properties

Wear resistance of TiB/sub 2/-Fe cermets

International Nuclear Information System (INIS)

Champagne, B.; Dallaire, S.

1985-01-01

A material which consists of TiB/sub 2/ dispersed in an iron matrix was synthesized by the exothermic reaction of ferrotitanium and boron. The as-reacted products were hot isostatically pressed to produce TiB/sub 2/-Fe cermets. The influence of HIP variables on the density and total fractional porosity of specimens is presented. Density above 95% is obtained by HIPping at temperatures below 1300 0 C. Increasing the temperature and the time of HIPping enhance the mechanical properties and wear resistance of TiB/sub 2/-Fe cermets by reducing their residual porosity. Relations obtained by regression analysis showed that the porosity strongly affects the properties of parts. Regression analysis point out that the wear loss of a 5% porosity TiB/sub 2/-Fe cermet is 270% higher than a dense HIPped cermet. Low stress and high stress abrasion resistance tests utilizing various abrasive media were carried out on dense HIPped cermets and results were compared with those obtained from WC-Co cermets and 1020 steel

Effect of boron additions on phase formation and magnetic properties of TbCu{sub 7}-type melt spun SmFe ribbons

Energy Technology Data Exchange (ETDEWEB)

Zheng, Chuanjiang; Yu, Dunbo, E-mail: yudb2008@126.com; Li, Kuoshe; Luo, Yang; Jin, Jinling; Lu, Shuo; Li, Hongwei; Mao, Yongjun; Quan, Ningtao

2016-08-15

Melt spun ribbons of a series of SmFe{sub 12}B{sub x} (x=0.0, 0.5, 0.75, 1.0, 1.25, and 1.5) have been prepared by the melt spinning technique. Sm–Fe–B melt spun ribbons with single phase TbCu{sub 7}-type structure were prepared from the SmFe{sub 12}B{sub x} (x=0.5, 0.75, and 1.0) alloys at the surface velocity around 40 m/s. The addition of boron not only inhibits the appearance of soft magnetic phase α-Fe, but also enhances the ability of amorphous formation for melt spun Sm–Fe ribbons. The concentration of boron atoms, however, exceeds the limit of the solubility (x>1.0) of Sm–Fe alloys, which does not impede the appearance of α-Fe but accelerates the formation of metastable phase Sm{sub 2}Fe{sub 23}B{sub 3} that is unfavorable to their magnetic properties. Moreover, it is found that the addition of boron whose concentration is 0.0≤x≤0.75 can stabilize the metastable TbCu{sub 7}-type structure because of the increase of the lattice parameter ratio c/a. The magnetic properties of as-annealed SmFe{sub 12}B{sub 1.0} melt spun ribbons with an energy product of 2.19MGOe, a coercivity of 2.36 kOe and a remanence of 4.8 kGs have been achieved. The microstructural characteristics of as-annealed melt spun SmFe{sub 12} and SmFe{sub 12}B{sub 1.0} ribbons have been discussed as well. The following sequence of the hyperfine field H(6l)2e) and the isomer shift δ(3g)<δ(6l)<δ(2e) is obtained by the analysis of {sup 57}Fe Mossbauer spectra. As the boron content is added gradually, the hyperfine fields of 3g and 6l sites increase slightly due to the competition of the positive electron polarization and the negative polarization. However, the value of H(2e) is almost constant. - Highlights: • A certain amount of boron additions can inhibit the emergence of the soft magnetic phase α-Fe and improve the ability of amorphous formation. • There is a solubility limit of boron atom within melt spun Sm–Fe alloys with TbCu{sub 7}-type structure, and the

Magnetization switching of NiFeSiB free layers for magnetic tunnel junctions

International Nuclear Information System (INIS)

Chun, B.S.; Ko, S.P.; Oh, B.S.; Hwang, J.Y.; Rhee, J.R.; Kim, T.W.; Saito, S.; Yoshimura, S.; Tsunoda, M.; Takahashi, M.; Kim, Y.K.

2006-01-01

Ferromagnetic amorphous Ni 16 Fe 62 Si 8 B 14 layer have been studied as free layers for magnetic tunnel junctions (MTJs) to enhance cell switching performance. Traditional MTJ free layer materials such as NiFe and CoFe were also prepared for switching comparison purposes. Both NiFeSiB and NiFe resulted in an order of magnitude smaller switching fields compared to the CoFe. The switching field was further reduced for the synthetic antiferromagnetic NiFeSiB free layered structure

Crystallisation kinetics of amorphous Fe{sub 72.5-x}Cu{sub 1}Nb{sub 4.5}Si{sub 10+x+y}B{sub 12-y} alloy

Energy Technology Data Exchange (ETDEWEB)

Miglierini, M. [Komenskeho Univ., Bratislava (Czechoslovakia). Dept. of Nuclear Physics and Technics; Lipka, J. [Komenskeho Univ., Bratislava (Czechoslovakia). Dept. of Nuclear Physics and Technics; Sitek, J. [Komenskeho Univ., Bratislava (Czechoslovakia). Dept. of Nuclear Physics and Technics

1994-11-01

Fe{sub 73.5}Cu{sub 1}Nb{sub 3}Si{sub 13.5}B{sub 9} and Fe{sub 72.5-x}Cu{sub 1}Nb{sub 4.5}Si{sub 10+x+y}B{sub 12-y} alloys are compared from the point of view of crystallisation behaviour and changes in the short-range order in the amorphous reminder. The increase in Nb to 4.5 at.% in the latter system slows down the formation of nanocrystals to approximately 40% even after 16 hours of anneal at 550 C for x = 0.5, y = 3. Segregation-induced changes in the short-range order are manifested via hyperfine field distributions corresponding to the amorphous reminder. (orig.)

Structural transformation in mechanosynthesized bcc Fe-Al-Si(Ge) solid solutions during heating

International Nuclear Information System (INIS)

Kubalova, L.M.; Sviridov, I.A.; Vasilyeva, O.Ya.; Fadeeva, V.I.

2007-01-01

X-ray diffractometry and Moessbauer spectroscopy study of Fe 50 Al 25 Si 25 and Fe 50 Al 25 Ge 25 alloys obtained by mechanical alloying (MA) of elementary powders was carried out. Phase transformation during heating of synthesized products was studied using differential scanning calorimetry (DSC). After 2.5 h of MA monophase alloys containing bcc Fe(Al, Ge) solid solutions Fe(Al, Si) are formed. Fe(Al, Si) is partially ordered B2 type and Fe(Al, Ge) is completely disordered. DSC curves of synthesized alloys displayed the presence of exothermal peaks caused by phase transformation. The metastable Fe(Al, Si) solid solution transformed into FeAl 1-x Si x (B2) and FeSi 1-x Al x (B20) equilibrium phases. The Fe(Al, Ge) solid solution transformed into equilibrium phases through intermediate stage of Fe 6 Ge 3 Al 2 metastable phase formation. The Fe 6 Ge 3 Al 2 phase dissociated into three equilibrium phases: FeAl 1-x Ge x (B2), χ-Fe 6 Ge 5 and η-Fe 13 (Ge, Al) 8 (B8 2 ). The structure of Fe 6 Ge 3 Al 2 was calculated by Rietveld method, the distribution of Al and Ge in the elementary cell and its parameters were calculated. Moessbauer study showed that Fe(Al, Si) and Fe(Al, Ge) solid solutions are paramagnetic. In the equilibrium state the alloy containing Si is also paramagnetic while the alloy with Ge showed ferromagnetic properties

Preparation and characterization of amorphous SiO2 coatings deposited by mirco-arc oxidation on sintered NdFeB permanent magnets

International Nuclear Information System (INIS)

Xu, J.L.; Xiao, Q.F.; Mei, D.D.; Zhong, Z.C.; Tong, Y.X.; Zheng, Y.F.; Li, L.

2017-01-01

Amorphous SiO 2 coatings were prepared on sintered NdFeB magnets by micro-arc oxidation (MAO) in silicate solution. The surface and cross-sectional morphologies, element and phase composition, corrosion resistance and magnetic properties of the coatings were investigated by scanning electron microscopy (SEM), energy dispersive X-ray spectrometer (EDS), X-ray photoelectron spectroscopy (XPS), potentiodynamic polarization test and physical properties measurements system (PPMS). The results showed that the surface morphologies of the coatings exhibited the “coral reef” like structure, different from the typical MAO porous structure. With increasing the voltages, the thickness of the coatings increased from 12.72 to 19.90 µm, the content of Si element increased, while the contents of Fe, Nd and P elements decreased. The coatings were mainly composed of amorphous SiO 2 and a few amorphous Fe 2 O 3 and Nd 2 O 3 . The amorphous SiO 2 coatings presented excellent thermal shock resistance, while the thermal shock resistance decreased with increasing the voltages. The corrosion resistance of the coatings increased with increasing the voltages, and it could be enhanced by one order of magnitude compared to the uncoated NdFeB magnets. The MAO coatings slightly decreased the magnetic properties of the NdFeB samples in different degrees. - Highlights: • Amorphous SiO 2 coatings were prepared on sintered NdFeB magnets by micro-arc oxidation. • The coatings presented excellent thermal shock resistance. • The corrosion resistance could be enhanced by one order of magnitude. • The MAO coatings slightly decreased the magnetic properties of the NdFeB samples.

Implantation of boron in silicon

International Nuclear Information System (INIS)

Hofker, W.K.

1975-01-01

The distribution versus depth of boron implanted in silicon and the corresponding electrical activity obtained after annealing are studied. The boron distributions are measured by secondary-ion mass spectrometry. Boron distributions implanted at energies in the range from 30 keV to 800 keV in amorphous and polycrystalline silicon are analysed. Moments of these distributions are determined by a curve-fitting programme and compared with moments calculated by Winterbon. Boron distributions obtained by implantations along a dense crystallographic direction in monocrystalline silicon are found to have penetrating tails. After investigation of some possible mechanisms of tail formation it is concluded that the tails are due to channelling. It was found that the behaviour of boron during annealing is determined by the properties of three boron fractions consisting of precipitated boron, interstitial boron and substitutional boron. The electrical activity of the boron versus depth is found to be consistent with the three boron fractions. A peculiar redistribution of boron is found which is induced by the implantation of a high dose of heavy ions and subsequent annealing. Different mechanisms which may cause the observed effects, such as thermal diffusion which is influenced by lattice strain and damage, are discussed. (Auth.)

Glass forming ability and magnetic properties of Co(40.2−x)Fe(20.1+x)Ni6.7B22.7Si5.3Nb5 (x=0–10) bulk metallic glasses produced by suction casting

International Nuclear Information System (INIS)

Sarlar, Kagan; Kucuk, Ilker

2015-01-01

The effect of Fe concentration on the glass forming ability (GFA) and magnetic properties in Co (40.2−x) Fe (20.1+x) Ni 6.7 B 22.7 Si 5.3 Nb 5 (x=0–10) bulk metallic glasses were investigated. By suction casting method, the bulk metallic glasses with diameters up to 2 mm were produced. We try to find out which Fe concentration makes an influence on Co based system's magnetic properties and glass forming ability. The curves of thermal analysis, obtained using differential scanning calorimetry (DSC), show that the Co (40.2−x) Fe (20.1+x) Ni 6.7 B 22.7 Si 5.3 Nb 5 (x=0–10) have a supercooled liquid region (∆T x ) of about 44 K. The saturation magnetizations (J s ) for as-cast BMG alloys were in the range of 0.62 T−0.81 T. - Highlights: • The effect of Fe concentration on the glass forming ability. • The substitution of an appropriate amount of Fe can enhance the GFA. • The substitution of Fe for Co also improves soft magnetic properties of the BMGs. • The high of J s 0.62−0.81 T with a low H c of 2−289 A/m of the alloys

Annealing characteristics of SiO2-Si structures after incoherent light pulse processing

International Nuclear Information System (INIS)

Sieber, N.; Klabes, R.; Voelskow, M.; Fenske, F.

1982-01-01

The behaviour of oxide charges and interface charges in boron implanted and non-implanted SiO 2 -Si structures as well as the electrical activation of the dopants by the action of incoherent light pulses was studied. Depth profiles of electrically active boron ions are presented for different annealing conditions as measured by the pulsed C-V method. It can be concluded that exposure of MOS structures to intense radiation of flash lamps does not increase the fixed charge and the fast state density at the SiO 2 -Si interface if optimal annealing conditions (energy densities) are employed. Low dose boron implanted silicon can be electrically activated without diffusion or segregation of dopants

Depth profiling of hydrogen passivation of boron in Si(100)

Science.gov (United States)

Huang, L. J.; Lau, W. M.; Simpson, P. J.; Schultz, P. J.

1992-08-01

The properties of SiO2/p-Si were studied using variable-energy positron-annihilation spectroscopy and Raman spectroscopy. The oxide film was formed by ozone oxidation in the presence of ultraviolet radiation at room temperature. Both the positron-annihilation and Raman analyses show that chemical cleaning of boron-doped p-type Si(100) using concentrated hydrofluoric acid prior to the oxide formation leads to hydrogen incorporation in the semiconductor. The incorporated hydrogen passivates the boron dopant by forming a B-H complex, the presence of which increases the broadening of the line shape in the positron-annihilation analysis, and narrows the linewidth of the Raman peak. Annealing of the SiO2/Si sample at a moderate temperature of 220 °C in vacuum was found sufficient to dissociate the complex and reactivate the boron dopant.

Distribution of impurity elements in slag-silicon equilibria for oxidative refining of metallurgical silicon for solar cell applications

Energy Technology Data Exchange (ETDEWEB)

Johnston, M.D.; Barati, M. [Department of Materials Science and Engineering, The University of Toronto, 184 College Street, Toronto, Ont. (Canada)

2010-12-15

The possibility of refining metallurgical grade silicon to a high-purity product for solar cell applications by the slagging of impurity elements was investigated. Distribution coefficients were determined for B, Ca, Mg, Fe, K and P between magnesia or alumina saturated Al{sub 2}O{sub 3}-CaO-MgO-SiO{sub 2} and Al{sub 2}O{sub 3}-BaO-SiO{sub 2} slags and silicon at 1500 C. The partitioning of the impurity elements between molten silicon and slag was examined in terms of basicity and oxygen potential of the slag, with particular focus on the behaviour of boron and phosphorus. The experimental results showed that both of these aspects of slag chemistry have a significant influence on the distribution coefficient of B and P. Increasing the oxygen potential by additions of silica was found to increase the distribution coefficients for both B and P. Increasing the basicity of the slag was not always effective in achieving high removal of these elements from silicon as excess amounts of basic oxides lower the activity of silica and consequently the oxygen potential. The extent of this effect is such that increasing basicity can lead to a decrease in distribution coefficient. Increasing lime in the slag increased distribution coefficients for B and P, but this counterbalancing effect was such that distributions were the lowest in barium-containing slags, despite barium oxide being the most basic of the fluxes used in this study. The highest removal efficiencies achieved were of the order of 80% and 90% for B and P, respectively. It was demonstrated that for the removal of B and P from metallurgical-grade silicon to solar-grade levels, a slag mass about 5 times the mass of silicon would be required. (author)

Mechanochemical synthesis of nanocrystalline Fe and Fe–B magnetic alloys

Energy Technology Data Exchange (ETDEWEB)

Mohammadi, Majid; Ghasemi, Ali, E-mail: ali13912001@yahoo.com; Tavoosi, Majid

2016-12-01

Mechanochemical synthesis and magnetic characterization of nanocrystalline Fe and Fe–B magnetic alloys was the goal of this study. In this regard, different Fe{sub 2}O{sub 3}–B{sub 2}O{sub 3} powder mixtures with sufficient amount of CaH{sub 2} were milled in a planetary ball mill in order to produce nanocrystalline Fe, Fe{sub 95}B{sub 5} and Fe{sub 85}B{sub 15} alloys. The produced samples were characterized using X-ray diffraction (XRD), differential scanning calorimetry (DSC), scanning electron microscopy (SEM) and vibrating sample magnetometer (VSM). The results showed that, nanocrystalline Fe, Fe{sub 95}B{sub 5} and Fe{sub 85}B{sub 15} alloys can be successfully synthesized by the reduction reaction of Fe{sub 2}O{sub 3} and B{sub 2}O{sub 3} with CaH{sub 2} during mechanical alloying. The structure of produced Fe{sub 95}B{sub 5} and Fe{sub 85}B{sub 15} alloys was a combination of Fe and Fe{sub 2}B phases with average crystallite sizes of about 15 and 10 nm, respectively. The produced nanocrystalline alloys exhibited soft magnetic properties with the coercivity and saturation of magnetization in the range of 170–240 Oe and 9–28 emu/g, respectively. Increasing the boron content has a destructive effect on soft magnetic properties of Fe–B alloys. - Highlights: • We study the mechanochemical synthesis of nanocrystalline boron, Fe and Fe–B alloys. • We study the reduction reaction of B{sub 2}O{sub 3}–CaH{sub 2} during milling. • We study the reduction reaction of Fe{sub 2}O{sub 3}–CaH{sub 2} during milling. • We study the reduction reaction of Fe{sub 2}O{sub 3}–B{sub 2}O{sub 3}–CaH{sub 2} during milling. • We study the effect of B on magnetic properties of nanocrystalline Fe–B alloys.

Measurement of proton induced thick target γ-ray yields on B, N, Na, Al and Si from 2.5 to 4.1 MeV

Energy Technology Data Exchange (ETDEWEB)

Chiari, M., E-mail: chiari@fi.infn.it [INFN-Florence and Department of Physics and Astronomy, University of Florence, via G. Sansone 1, 50019 Sesto Fiorentino (Italy); Ferraccioli, G.; Melon, B.; Nannini, A.; Perego, A.; Salvestrini, L. [INFN-Florence and Department of Physics and Astronomy, University of Florence, via G. Sansone 1, 50019 Sesto Fiorentino (Italy); Lagoyannis, A.; Preketes-Sigalas, K. [Tandem Accelerator Laboratory, Institute of Nuclear and Particle Physics, NCSR “Demokritos”, 153.10 Aghia Paraskevi, Athens (Greece)

2016-01-01

Thick target yields for proton induced γ-ray emission (PIGE) on low-Z nuclei, namely B, N, Na, Al and Si, were measured for proton energies from 2.5 to 4.1 MeV and emission angles of 0°, 45° and 90°, at the 3 MV Tandetron laboratory of INFN-LABEC in Florence. The studied reactions were: {sup 10}B(p,α′γ){sup 7}Be (E{sub γ} = 429 keV), {sup 10}B(p,p′γ){sup 10}B (E{sub γ} = 718 keV) and {sup 11}B(p,p′γ){sup 11}B (E{sub γ} = 2125 keV) for boron; {sup 14}N(p,p′γ){sup 14}N (E{sub γ} = 2313 keV) for nitrogen; {sup 23}Na(p,p′γ){sup 23}Na (E{sub γ} = 441 and 1636 keV) and {sup 23}Na(p,α′γ){sup 20}Ne (E{sub γ} = 1634 keV) for sodium; {sup 27}Al(p,p′γ){sup 27}Al (E{sub γ} = 844 and 1014 keV) and {sup 27}Al(p,α′γ){sup 24}Mg (E{sub γ} = 1369 keV) for aluminum; {sup 28}Si(p,p′γ){sup 28}Si (E{sub γ} = 1779 keV) and {sup 29}Si(p,p′γ){sup 29}Si (E{sub γ} = 1273 keV) for silicon. The PIGE thick target yields have been measured with an overall uncertainty typically better than 10%. The use of the measured thick target yield to benchmark and validate experimental cross sections available in the literature is demonstrated.

ThSi_2 type ytterbium disilicide and its analogues YbT_xSi_2_-_x (T = Cr, Fe, Co)

International Nuclear Information System (INIS)

Peter, Sebastian C.; Kanatzidis, Mercouri G.

2012-01-01

YbSi_2 and the derivatives YbT_xSi_2_-_x (T = Cr, Fe, Co) crystallizing in the α-ThSi_2 structure type were obtained as single crystals from reactions run in liquid indium. All silicides were investigated by single-crystal X-ray diffraction, I4_1/amd space group and the lattice constants are: a = 3.9868(6) Aa and c = 13.541(3) Aa for YbSi_2, a = 4.0123(6) Aa and c = 13.542(3) Aa for YbCr_0_._2_7Si_1_._7_3, a = 4.0142(6) Aa and c = 13.830(3) Aa for YbCr_0_._7_1Si_1_._2_9, a = 4.0080(6) Aa and c = 13.751(3) Aa for YbFe_0_._3_4Si_1_._6_6, and a = 4.0036(6) Aa, c = 13.707(3) Aa for YbCo_0_._2_1Si_1_._7_9. YbSi_2 and YbT_xSi_2_-_x compounds are polar intermetallics with three-dimensional Si and M (T+Si) polyanion sub-networks, respectively, filled with ytterbium atoms. The degree of substitution of transition metal at the silicon site is signficant and leads to changes in the average bond lengths and bond angles substantially. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Interaction between solute atoms and radiation defects in Fe-Ni-Si and Fe-Mn-Si alloys under irradiation with proton ions at low-temperature

Energy Technology Data Exchange (ETDEWEB)

Murakami, Kenta, E-mail: murakami@tokai.t.u-tokyo.ac.jp [Nuclear Professional School, School of Engineering, The University of Tokyo, 2-22 Shirakata-Shirane, Tokai-mura, Ibaraki, 319-1188 (Japan); Iwai, Takeo, E-mail: iwai@med.id.yamagata-u.ac.jp [Faculty of Medicine, Yamagata University, 2-2-2 Iida-Nishi, Yamagata, Yamagata-shi, 990-9585 (Japan); Abe, Hiroaki [Nuclear Professional School, School of Engineering, The University of Tokyo, 2-22 Shirakata-Shirane, Tokai-mura, Ibaraki, 319-1188 (Japan); Sekimura, Naoto, E-mail: sekimura@n.t.u-tokyo.ac.jp [Department of Nuclear Engineering and Management, School of Engineering, The University of Tokyo, 7-3-1, Tokyo, Hongo, Bunkyo, 113-8656 (Japan)

2016-12-15

Isochronal annealing followed by residual resistivity measurements at 12 K was performed in Fe-0.6Ni-0.6Si and Fe-1.5Mn-0.6Si alloys irradiated with 1 MeV proton ions below 70 K, and recovery stages were compared with those of Fe–0.6Ni and Fe–1.5Mn. The effects of silicon addition in the Fe-Ni alloy was observed as the appearance of a new recovery stage at 282–372 K, presumably corresponding to clustering of solute atoms in matrix, and as a change in mixed dumbbell migration at 122–142 K. Silicon addition mitigated the manganese effect in Fe–Mn alloy that is obstructing the recovery of radiation defects. Reduction of resistivity in Fe-Mn-Si alloy also suggested formation of small solute atom clusters.

Ferromagnetism and nonmetallic transport of thin-film α-FeSi(2): a stabilized metastable material.

Science.gov (United States)

Cao, Guixin; Singh, D J; Zhang, X-G; Samolyuk, German; Qiao, Liang; Parish, Chad; Jin, Ke; Zhang, Yanwen; Guo, Hangwen; Tang, Siwei; Wang, Wenbin; Yi, Jieyu; Cantoni, Claudia; Siemons, Wolter; Payzant, E Andrew; Biegalski, Michael; Ward, T Z; Mandrus, David; Stocks, G M; Gai, Zheng

2015-04-10

A metastable phase α-FeSi_{2} was epitaxially stabilized on a silicon substrate using pulsed laser deposition. Nonmetallic and ferromagnetic behaviors are tailored on α-FeSi_{2} (111) thin films, while the bulk material of α-FeSi_{2} is metallic and nonmagnetic. The transport property of the films renders two different conducting states with a strong crossover at 50 K, which is accompanied by the onset of a ferromagnetic transition as well as a substantial magnetoresistance. These experimental results are discussed in terms of the unusual electronic structure of α-FeSi_{2} obtained within density functional calculations and Boltzmann transport calculations with and without strain. Our finding sheds light on achieving ferromagnetic semiconductors through both their structure and doping tailoring, and provides an example of a tailored material with rich functionalities for both basic research and practical applications.

Magnetic phase transition in MnFeP0.5As0.4Si0.1

International Nuclear Information System (INIS)

Wang, J L; Campbell, S J; Tegus, O; Brueck, E; Dou, S X

2010-01-01

We have carried out a detailed investigation of the magnetic phase transition in MnFeP 0.5 As 0.4 Si 0.1 . Temperature hysteresis has been observed in the variable temperature magnetization curves (B appl = 0.01 T) with T C W ∼ 302 K on warming and T C C ∼ 292 K on cooling. The first order nature of this transition in MnFeP 0.5 As 0.4 Si 0.1 is confirmed by the negative slope obtained from isotherms of M 2 versus B/M around the critical temperature. Linear thermal expansion measurements reveal a large volume change, ΔV/V∼8.7x10 -3 at the magnetic phase transition and that this magnetovolume effect is suppressed to ΔV/V ∼ 5.5x10 -3 in an applied field of B appl = 1.0 T. Analyses of 57 Fe Moessbauer spectra (4.5 - 300 K) using a random distribution model and taking nearest-neighbour environments into account, indicate that the paramagnetic and ferromagnetic phases coexist over a temperature range of ∼ 45 K around the Curie temperature. The Debye temperature for MnFeP 0.5 As 0.4 Si 0.1 has been evaluated as θ D = 350 ± 20 K from the temperature dependence of the average isomer shift.

Fracture toughness of borides formed on boronized ductile iron

International Nuclear Information System (INIS)

Sen, Ugur; Sen, Saduman; Koksal, Sakip; Yilmaz, Fevzi

2005-01-01

In this study, fracture toughness properties of boronized ductile iron were investigated. Boronizing was realized in a salt bath consisting of borax, boric acid and ferro-silicon. Boronizing heat treatment was carried out between 850 and 950 deg. C under the atmospheric pressure for 2-8 h. Borides e.g. FeB, Fe 2 B formed on ductile iron was verified by X-ray diffraction (XRD) analysis, SEM and optical microscope. Experimental results revealed that longer boronizing time resulted in thicker boride layers. Optical microscope cross-sectional observation of borided layers showed dentricular morphology. Both microhardness and fracture toughness of borided surfaces were measured via Vickers indenter. The harnesses of borides formed on the ductile iron were in the range of 1160-2140 HV 0.1 and fracture toughness were in the range of 2.19-4.47 MPa m 1/2 depending on boronizing time and temperature

Improving the electrochemical properties of nanosized LiFePO4-based electrode by boron doping

International Nuclear Information System (INIS)

Trócoli, Rafael; Franger, Sylvain; Cruz, Manuel; Morales, Julián; Santos-Peña, Jesús

2014-01-01

Highlights: • Thermal treatment of boron phosphate with LiFePO 4 provides electrode materials with high performance in lithium half-cells: 160 mAh·g -1 (90% of theoretical capacity) under C/5 rate • The products are composites containing boron-modified LiFePO 4 , FePO 4 and an amorphous phase with ionic diffusion properties • The boron treatment affects textural, conductive and lithium diffusivity of the electrode material leading to higher performance • A limited boron-doping of the phospholivine structure is observed - Abstract: Electrode materials with homogeneous distribution of boron were obtained by heating mixtures of nanosized carbon-coated lithium iron phosphate and BPO 4 in 3-9% weight at 700 °C. The materials can be described as nanocomposites containing i) LiFePO 4 , possibly doped with a low amount of boron, ii) FePO 4 and iii) an amorphous layer based on Li 4 P 2 O 7 -derived material that surrounds the phosphate particles. The thermal treatment with BPO 4 also triggered changes in the carbon coating graphitic order. Galvanostatic and voltammetric studies in lithium half-cells showed smaller polarisation, higher capacity and better cycle life for the boron-doped composites. For instance, one of the solids, called B 6 -LiFePO 4 , provided close to 150 and 140 mAhg -1 (87% and 81% of theoretical capacity, respectively) under C/2.5 and C regimes after several cycles. Improved specific surface area, carbon graphitization, conductivity and lithium ion diffusivity in the boron-doped phospholivine network account for this excellent rate performance. The properties of an amorphous layer surrounding the phosphate particles also account for such higher performance

Synthesis and microwave absorption enhancement of Fe-doped NiO@SiO2@graphene nanocomposites

International Nuclear Information System (INIS)

Wang, Lei; Huang, Ying; Ding, Xiao; Liu, Panbo; Zong, Meng; Wang, Yan

2013-01-01

Highlights: • Fe-doped NiO@SiO 2 @graphene composites have excellent microwave performance. • The reflection loss of Fe doped NiO@SiO 2 @graphene was below −10 dB in 7–11 GHz. • The maximum absorption of Fe-doped NiO@SiO 2 @graphene was −51.2 dB at 8.6 GHz. -- Abstract: Fe-doped NiO@SiO 2 @graphene nanocomposites have been successfully fabricated for the first time, in which Fe-doped NiO nanoparticles are about 3 nm in diameter. In order to measure their electromagnetic properties, Fe-doped NiO@SiO 2 @graphene (25 wt%) wax composites were then prepared. The experimental results show that Fe-doped NiO@SiO 2 @graphene nanocomposites exhibit significantly enhanced microwave absorption performance in terms of both the maximum reflection loss value and the absorption bandwidth in comparison with NiO@SiO 2 @graphene. The maximum reflection loss of Fe-doped NiO@SiO 2 @graphene nanocomposites can reach −51.2 dB at 8.6 GHz with a thickness of 4 mm, and the absorption bandwidth with the reflection loss below −10 dB is 4 GHz (from 7 to 11 GHz). Therefore, this kind of nanocomposites may have the potential as high-efficient absorbers for microwave absorption applications

submitter Energy Resolution Of Si/Fe And Si/Pb Electromagnetic Calorimeters

CERN Document Server

Bosetti, M; Pensotti, S.; Penzo, A.; Rancoita, P.G.; Rattaggi, M.; Redaelli, M.; Salvato, G.; Terzi, G.

1993-01-01

The energy resolution of electromagnetic sampling calorimeters using silicon mosaics as active medium, has been measured for Pb and Fe absorbers at incoming electron energies E of 2, 4, and 6 GeV. The energy resolution, found for the Si/Pb sented by a(E)/E = pling frequency. The energy resolution can be rewritten as a function of the dead area energy losses (D): a(E)/E = (KO + all))% ,/- with KO = (17.6 f 0.3)%, (24.1&0.8)%, for Si/Pb, Si/Fe, respectively; a1 = 1.2f0.3 for both absorbers.

Silicon (100)/SiO2 by XPS

Energy Technology Data Exchange (ETDEWEB)

Jensen, David S.; Kanyal, Supriya S.; Madaan, Nitesh; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Linford, Matthew R.

2013-09-25

Silicon (100) wafers are ubiquitous in microfabrication and, accordingly, their surface characteristics are important. Herein, we report the analysis of Si (100) via X-ray photoelectron spectroscopy (XPS) using monochromatic Al K radiation. Survey scans show that the material is primarily silicon and oxygen, and the Si 2p region shows two peaks that correspond to elemental silicon and silicon dioxide. Using these peaks the thickness of the native oxide (SiO2) was estimated using the equation of Strohmeier.1 The oxygen peak is symmetric. The material shows small amounts of carbon, fluorine, and nitrogen contamination. These silicon wafers are used as the base material for subsequent growth of templated carbon nanotubes.

The effect of Fe-coverage on the structure, morphology and magnetic properties of α-FeSi2 nanoislands

International Nuclear Information System (INIS)

Tripathi, J K; Goldfarb, I; Garbrecht, M; Kaplan, W D; Markovich, G

2012-01-01

Self-assembled α-FeSi 2 nanoislands were formed using solid-phase epitaxy of low (∼1.2 ML) and high (∼21 ML) Fe coverages onto vicinal Si(111) surfaces followed by thermal annealing. At a resulting low Fe-covered Si(111) surface, we observed in situ, by real-time scanning tunneling microscopy and surface electron diffraction, the entire sequence of Fe–silicide formation and transformation from the initially two-dimensional (2 × 2)-reconstructed layer at 300 °C into (2 × 2)-reconstructed nanoislands decorating the vicinal step-bunch edges in a self-ordered fashion at higher temperatures. In contrast, the silicide nanoislands at a high Fe-covered surface were noticeably larger, more three-dimensional, and randomly distributed all over the surface. Ex situ x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy indicated the formation of an α-FeSi 2 island phase, in an α-FeSi 2 { 112} ∥ Si{ 111} orientation. Superconducting quantum interference device magnetometry showed considerable superparamagnetism, with ∼1.9 μ B /Fe atom at 4 K for the low Fe-coverage, indicating stronger ferromagnetic coupling of individual magnetic moments, as compared to high Fe-coverage, where the calculated moments were only ∼0.8 μ B /Fe atom. Such anomalous magnetic behavior, particularly for the low Fe-coverage case, is radically different from the non-magnetic bulk α-FeSi 2 phase, and may open new pathways to high-density magnetic memory storage devices. (paper)

Preparation and characterization of amorphous SiO{sub 2} coatings deposited by mirco-arc oxidation on sintered NdFeB permanent magnets

Energy Technology Data Exchange (ETDEWEB)

Xu, J.L., E-mail: jlxu@nchu.edu.cn [Center for Biomedical Materials and Engineering, Harbin Engineering University, Harbin 150001 (China); School of Materials Science and Engineering, Nanchang Hangkong University, Nanchang 330063 (China); Xiao, Q.F.; Mei, D.D. [School of Materials Science and Engineering, Nanchang Hangkong University, Nanchang 330063 (China); Zhong, Z.C., E-mail: zzhong2014@sina.com [The Institute for Rare Earth Magnetic Materials and Devices, Jiangxi University of Science and Technology, Ganzhou 341000 (China); Tong, Y.X. [Center for Biomedical Materials and Engineering, Harbin Engineering University, Harbin 150001 (China); Zheng, Y.F., E-mail: yfzheng@pku.edu.cn [Center for Biomedical Materials and Engineering, Harbin Engineering University, Harbin 150001 (China); Li, L. [Center for Biomedical Materials and Engineering, Harbin Engineering University, Harbin 150001 (China)

2017-03-15

Amorphous SiO{sub 2} coatings were prepared on sintered NdFeB magnets by micro-arc oxidation (MAO) in silicate solution. The surface and cross-sectional morphologies, element and phase composition, corrosion resistance and magnetic properties of the coatings were investigated by scanning electron microscopy (SEM), energy dispersive X-ray spectrometer (EDS), X-ray photoelectron spectroscopy (XPS), potentiodynamic polarization test and physical properties measurements system (PPMS). The results showed that the surface morphologies of the coatings exhibited the “coral reef” like structure, different from the typical MAO porous structure. With increasing the voltages, the thickness of the coatings increased from 12.72 to 19.90 µm, the content of Si element increased, while the contents of Fe, Nd and P elements decreased. The coatings were mainly composed of amorphous SiO{sub 2} and a few amorphous Fe{sub 2}O{sub 3} and Nd{sub 2}O{sub 3}. The amorphous SiO{sub 2} coatings presented excellent thermal shock resistance, while the thermal shock resistance decreased with increasing the voltages. The corrosion resistance of the coatings increased with increasing the voltages, and it could be enhanced by one order of magnitude compared to the uncoated NdFeB magnets. The MAO coatings slightly decreased the magnetic properties of the NdFeB samples in different degrees. - Highlights: • Amorphous SiO{sub 2} coatings were prepared on sintered NdFeB magnets by micro-arc oxidation. • The coatings presented excellent thermal shock resistance. • The corrosion resistance could be enhanced by one order of magnitude. • The MAO coatings slightly decreased the magnetic properties of the NdFeB samples.

Si/Fe flux ratio influence on growth and physical properties of polycrystalline β-FeSi2 thin films on Si(100) surface

Science.gov (United States)

Tarasov, I. A.; Visotin, M. A.; Aleksandrovsky, A. S.; Kosyrev, N. N.; Yakovlev, I. A.; Molokeev, M. S.; Lukyanenko, A. V.; Krylov, A. S.; Fedorov, A. S.; Varnakov, S. N.; Ovchinnikov, S. G.

2017-10-01

This work investigates the Si/Fe flux ratio (2 and 0.34) influence on the growth of β-FeSi2 polycrystalline thin films on Si(100) substrate at 630 °C. Lattice deformations for the films obtained are confirmed by X-ray diffraction analysis (XRD). The volume unit cell deviation from that of β-FeSi2 single crystal are 1.99% and 1.1% for Si/Fe =2 and Si/Fe =0.34, respectively. Absorption measurements show that the indirect transition ( 0.704 eV) of the Si/Fe =0.34 sample changes to the direct transition with a bandgap value of 0.816 eV for the sample prepared at Si/Fe =2. The absorption spectrum of the Si/Fe =0.34 sample exhibits an additional peak located below the bandgap energy value with the absorption maximum of 0.36 eV. Surface magneto-optic Kerr effect (SMOKE) measurements detect the ferromagnetic behavior of the β-FeSi2 polycrystalline films grown at Si/Fe =0.34 at T=10 K, but no ferromagnetism was observed in the samples grown at Si/Fe =2. Theoretical calculations refute that the cell deformation can cause the emergence of magnetization and argue that the origin of the ferromagnetism, as well as the lower absorption peak, is β-FeSi2 stoichiometry deviations. Raman spectroscopy measurements evidence that the film obtained at Si/Fe flux ratio equal to 0.34 has the better crystallinity than the Si/Fe =2 sample.

The influence of boron on the crystal structure and properties of mullite. Investigations at ambient, high-pressure, and high-temperature conditions

Energy Technology Data Exchange (ETDEWEB)

Luehrs, Hanna

2013-11-21

Mullite is one of the most important synthetic compounds for advanced structural and functional ceramic materials. The crystal structure of mullite with the composition Al{sub 2}[Al{sub 2+2x}Si{sub 2-2x}]O{sub 10-x} can incorporate a large variety of foreign cations, including (amongst others) significant amounts of boron. However, no chemical or crystal structure analyses of boron-mullites (B-mullites) were available prior to this work, thus representing the key aspects of this thesis. Furthermore, the influence of boron on selected properties of mullite under ambient, high-temperature, and high-pressure conditions are addressed. Starting from a 3:2 mullite composition (Al{sub 4.5}Si{sub 1.5}O{sub 9.75}), the initial hypothesis for this study was a 1:1 isomorphous replacement of silicon by boron according to the coupled substitution mechanism: 2 Si{sup 4+} + O{sup 2-} → 2 B{sup 3+} + □. Based on a series of compounds synthesized from sol-gel derived precursors at ambient pressure and 1200 C, the formation conditions and physical properties of B-mullites were investigated. The formation temperature for B-mullites decreases with increasing boron-content, as revealed by thermal analyses. An anisotropic development of lattice parameters is observed: Whereas lattice parameters a and b only exhibit minor changes, a linear relationship between lattice parameter c and the amount of boron in the crystal structure was established, on the basis of prompt gamma activation analyses (PGAA) and Rietveld refinements. According to this relationship about 15% of the silicon in mullite can be replaced by boron yielding single-phase B-mullite. B-mullites with significantly higher (∝ factor 3) boron-contents in the mullite structure were also observed but the respective samples contain alumina impurities. Fundamental new details regarding the response of B-mullite to high-temperature and highpressure are presented in this thesis. On the one hand, long-term thermal stability at

Insight into cation disorder of Li{sub 2}Fe{sub 0.5}Mn{sub 0.5}SiO{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Bini, Marcella [Dept. of Chemistry, University of Pavia, viale Taramelli 16, Pavia 27100 (Italy); Ferrari, Stefania, E-mail: stefania.ferrari@unipv.it [Dept. of Chemistry, University of Pavia, viale Taramelli 16, Pavia 27100 (Italy); Capsoni, Doretta; Spreafico, Clelia; Tealdi, Cristina; Mustarelli, Piercarlo [Dept. of Chemistry, University of Pavia, viale Taramelli 16, Pavia 27100 (Italy)

2013-04-15

Transition metal lithium orthosilicates are promising cathode materials for lithium-ion batteries. Here we report a combined experimental (in situ X-ray diffraction) and computational (static lattice and molecular dynamics) study of the thermal behavior of the Li{sub 2}Fe{sub 0.5}Mn{sub 0.5}SiO{sub 4} orthosilicate from room temperature to 950 °C. Our X-ray results showed that Pmnb polymorph is the most stable all over the explored temperature range. A significant cation disorder up to 80%, based on the anti-site defect, was found. The defect concentration depends on the synthesis route and temperature, and is completely reversible after the thermal treatments. Moreover, a careful analysis of the impurity phases allowed us to identify Li{sub 2}SiO{sub 3}, Fe{sub 3}O{sub 4} and Li{sub 3}Fe{sub 5}O{sub 8}, the last one never reported before. The minimization of defects by opportunely tuning the synthetic parameters would be of great importance in view of potential applications of these materials in lithium batteries. - Graphical abstract: A combined experimental in situ X-ray diffraction and computational study of the thermal behavior of the Li{sub 2}Fe{sub 0.5}Mn{sub 0.5}SiO{sub 4} is reported herein. The anti-site defect does justify the diffraction patterns changes with temperature. Highlights: ► Study of the thermal behavior of Li{sub 2}Fe{sub 0.5}Mn{sub 0.5}SiO{sub 4}. ► The anti-site defect does justify the diffraction patterns changes with temperature. ► The Pmnb polymorph is stable in the investigated temperaturerange.

Surface passivation of n-type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks

Science.gov (United States)

van de Loo, B. W. H.; Ingenito, A.; Verheijen, M. A.; Isabella, O.; Zeman, M.; Kessels, W. M. M.

2017-06-01

Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that charge-carrier recombination at particularly highly n-type doped black Si surfaces is further suppressed. In this work, this issue is addressed through systematically studying lowly and highly doped b-Si surfaces, which are passivated by atomic-layer-deposited Al2O3 films or SiO2/Al2O3 stacks. In lowly doped b-Si textures, a very low surface recombination prefactor of 16 fA/cm2 was found after surface passivation by Al2O3. The excellent passivation was achieved after a dedicated wet-chemical treatment prior to surface passivation, which removed structural defects which resided below the b-Si surface. On highly n-type doped b-Si, the SiO2/Al2O3 stacks result in a considerable improvement in surface passivation compared to the Al2O3 single layers. The atomic-layer-deposited SiO2/Al2O3 stacks therefore provide a low-temperature, industrially viable passivation method, enabling the application of highly n- type doped b-Si nanotextures in industrial silicon solar cells.

Influence of laser power on atom probe tomographic analysis of boron distribution in silicon

Energy Technology Data Exchange (ETDEWEB)

Tu, Y., E-mail: ytu@imr.tohoku.ac.jp [The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313 (Japan); Takamizawa, H.; Han, B.; Shimizu, Y.; Inoue, K.; Toyama, T. [The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313 (Japan); Yano, F. [The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313 (Japan); Tokyo City University, Setagaya, Tokyo 158-8557 (Japan); Nishida, A. [Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504 (Japan); Nagai, Y. [The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313 (Japan)

2017-02-15

The relationship between the laser power and the three-dimensional distribution of boron (B) in silicon (Si) measured by laser-assisted atom probe tomography (APT) is investigated. The ultraviolet laser employed in this study has a fixed wavelength of 355 nm. The measured distributions are almost uniform and homogeneous when using low laser power, while clear B accumulation at the low-index pole of single-crystalline Si and segregation along the grain boundaries in polycrystalline Si are observed when using high laser power (100 pJ). These effects are thought to be caused by the surface migration of atoms, which is promoted by high laser power. Therefore, for ensuring a high-fidelity APT measurement of the B distribution in Si, high laser power is not recommended. - Highlights: • Influence of laser power on atom probe tomographic analysis of B distribution in Si is investigated. • When using high laser power, inhomogeneous distributions of B in single-crystalline and polycrystalline Si are observed. • Laser promoted migration of B atoms over the specimen is proposed to explain these effects.

Bismuth-boron multiple bonding in BiB_2O"- and Bi_2B"-

International Nuclear Information System (INIS)

Jian, Tian; Cheung, Ling Fung; Chen, Teng-Teng; Wang, Lai-Sheng

2017-01-01

Despite its electron deficiency, boron is versatile in forming multiple bonds. Transition-metal-boron double bonding is known, but boron-metal triple bonds have been elusive. Two bismuth boron cluster anions, BiB_2O"- and Bi_2B"-, containing triple and double B-Bi bonds are presented. The BiB_2O"- and Bi_2B"- clusters are produced by laser vaporization of a mixed B/Bi target and characterized by photoelectron spectroscopy and ab initio calculations. Well-resolved photoelectron spectra are obtained and interpreted with the help of ab initio calculations, which show that both species are linear. Chemical bonding analyses reveal that Bi forms triple and double bonds with boron in BiB_2O"- ([Bi≡B-B≡O]"-) and Bi_2B"- ([Bi=B=Bi]"-), respectively. The Bi-B double and triple bond strengths are calculated to be 3.21 and 4.70 eV, respectively. This is the first experimental observation of Bi-B double and triple bonds, opening the door to design main-group metal-boron complexes with multiple bonding. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

Nanocrystal Growth in Thermally Treated Fe75Ni2Si8B13C2 Amorphous Alloy

Czech Academy of Sciences Publication Activity Database

Minić, Dragica M.; Blagojević, V.; Minić, Dušan M.; David, Bohumil; Pizúrová, Naděžda; Žák, Tomáš

43A, č. 9 (2012), s. 3062-3069 ISSN 1073-5623 R&D Projects: GA MŠk 1M0512 Institutional support: RVO:68081723 Keywords : Nanocrystal growth * Fe75Ni2Si8B13C2 * Amorphous alloy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.627, year: 2012

Photoluminescence of the Mg2Al4Si5O18-Al2O3-MgAl2O4-SiO2 ceramic system containing Fe3+ and Cr3+ as impurity ions

Science.gov (United States)

Sosman, L. P.; López, A.; Pedro, S. S.; Papa, A. R. R.

2018-02-01

This work presents the results of photoluminescence, excitation and radiative decay time for a ceramic system containing Mg2Al4Si5O18-Al2O3-MgAl2O4-SiO2 with Fe3+ and Cr3+ as impurity ions. Emission data were obtained using several excitation wavelengths and the excitation data were acquired for the most intense emission bands. The optical results were analyzed according to the Tanabe-Sugano (TS) theory from which the crystalline field parameter Dq and Racah parameters B and C were obtained for the Fe3+ and Cr3+ sites. The results indicate that the Fe3+ and Cr3+ ions occupy tetrahedral and octahedral sites, respectively. The emission from Fe3+ and Cr3+ ions causes an intense and broad band ranging between 350 nm and 850 nm, showing that this material is a potential tunable radiation source at room temperature.

Properties of ion implanted epitaxial CoSi2/Si(1 0 0) after rapid thermal oxidation

International Nuclear Information System (INIS)

Zhao, Q.T.; Kluth, P.; Xu, J.; Kappius, L.; Zastrow, U.; Wang, Z.L.; Mantl, S.

2000-01-01

Epitaxial CoSi 2 layers were grown on Si(1 0 0) using molecular beam allotaxy. Boron ion implantations and rapid thermal oxidation (RTO) were performed. During oxidation, SiO 2 formed on the surface of the CoSi 2 layers, and the silicides was pushed into the substrate. The diffusion of boron was slightly retarded during oxidation for the specimen with a 20 nm epitaxial CoSi 2 capping layer as compared to the specimen without CoSi 2 capping layer. The electrical measurements showed that the silicide has good Schottky contacts with the boron doped silicon layer after RTO. A nanometer silicide patterning process, based on local oxidation of silicide (LOCOSI) layer, was also investigated. It shows two back-to-back Schottky diodes between the two separated parts of the silicide

Preparation and characterization of amorphous SiO2 coatings deposited by mirco-arc oxidation on sintered NdFeB permanent magnets

Science.gov (United States)

Xu, J. L.; Xiao, Q. F.; Mei, D. D.; Zhong, Z. C.; Tong, Y. X.; Zheng, Y. F.; Li, L.

2017-03-01

Amorphous SiO2 coatings were prepared on sintered NdFeB magnets by micro-arc oxidation (MAO) in silicate solution. The surface and cross-sectional morphologies, element and phase composition, corrosion resistance and magnetic properties of the coatings were investigated by scanning electron microscopy (SEM), energy dispersive X-ray spectrometer (EDS), X-ray photoelectron spectroscopy (XPS), potentiodynamic polarization test and physical properties measurements system (PPMS). The results showed that the surface morphologies of the coatings exhibited the "coral reef" like structure, different from the typical MAO porous structure. With increasing the voltages, the thickness of the coatings increased from 12.72 to 19.90 μm, the content of Si element increased, while the contents of Fe, Nd and P elements decreased. The coatings were mainly composed of amorphous SiO2 and a few amorphous Fe2O3 and Nd2O3. The amorphous SiO2 coatings presented excellent thermal shock resistance, while the thermal shock resistance decreased with increasing the voltages. The corrosion resistance of the coatings increased with increasing the voltages, and it could be enhanced by one order of magnitude compared to the uncoated NdFeB magnets. The MAO coatings slightly decreased the magnetic properties of the NdFeB samples in different degrees.

Viscosity and Structure of CaO-SiO2-P2O5-FetO System with Varying P2O5 and FeO Content

Science.gov (United States)

Diao, Jiang; Gu, Pan; Liu, De-Man; Jiang, Lu; Wang, Cong; Xie, Bing

2017-10-01

A rotary viscosimeter and Raman spectrum were employed to measure the viscosity and structural information of the CaO-SiO2-P2O5-FetO system at 1673 K. The experimental data have been compared with the calculated results using different viscosity models. It shows that the National Physical Laboratory (NPL) and Pal models fit the CaO-SiO2-P2O5-FeOt system better. With the P2O5 content increasing from 5% to 14%, the viscosity increases from 0.12 Pa s to 0.27 Pa s. With the FeO content increasing from 30% to 40%, the viscosity decreases from 0.21 Pa s to 0.12 Pa s. Increasing FeO content makes the complicated molten melts become simple, and increasing P2O5 content will complicate the molten melts. The linear relation between viscosity and structure parameter Q(Si + P) was obtained by regression analysis. The calculated viscosity by using the optimized NPL and Pal model are almost identical with the fitted values.

Corelation between the crystallisation process and change in thermoelectromotive force for the amorphous alloy Fe89.8Ni1.5Si5.2B3C0.5

Directory of Open Access Journals (Sweden)

Maričić Aleksa M.

2003-01-01

Full Text Available Thermal and kinetic analyses of the structural changes for the amorphous alloy Fe89.8Ni1.5Si5.2B3C0.5, during the processes of non-isothermal heating and isothermal annealing, have been performed. The crystallisation process has been investigated using the method of differential scanning calorimetry (DSC. It is determined that this alloy crystalizes through three different stages. Changes in the electronic structure of the amorphous tape, for the temperature range 20 to 700ºC have been studied. This was achieved by measuring the thermoelectromotive force (TEMS, of the thermo pair made of two tapes with same chemical structure of the alloy FeNiSiBC, but different atomic structure: one is in the crystal state (CL and the other is in the amorphous state (AM. Analysis of the temperature dependence of the electromotive force has shown the following: the investigated alloy is thermically stable up to 450ºC and changes in the atomic structure as well as equalising of the free electron density in both parts of the thermo pair AM-CL, take place in the temperature range from 450 to 550ºC. Kinetic parameters of the process were determined by measuring time dependence of the TEMS in isothermic conditions at the temperatures 450, 480 and 510ºC.

Improved magnetoimpedance and mechanical properties on nanocrystallization of amorphous Fe68.5Si18.5Cu1Nb3B9 ribbons

International Nuclear Information System (INIS)

Sahoo, Trilochan; Majumdar, B.; Srinivas, V.; Srinivas, M.; Nath, T.K.; Agarwal, G.

2013-01-01

The effect of heat-treatment temperature on evolution of microstructures, mechanical and soft magnetic properties and magnetoimpedance (MI) effect in rapidly solidified Fe 68.5 Si 18.5 Cu 1 Nb 3 B 9 ribbons, has been investigated. The as-quenched ribbons were subjected to heat-treatment at different temperatures between 400 and 600 °C for 1 h under high vacuum. Detailed structural studies on the ribbons heat-treated at and above 525 °C revealed the presence of nanocrystalline Fe 3 Si phases embedded in a residual amorphous matrix. The ribbon heat-treated at 550 °C temperature exhibits maximum ductility, maximum relative permeability of 4.8×10 4 , minimum coercivity of 0.1 Oe, and maximum MI value of 62%. The enhanced MI effect is believed to be related to the magnetic softening of 550 °C heat-treated ribbons. However, the magnetic properties and MI effect deteriorated in the samples heat-treated above 550 °C due to the coarsening of grain sizes. The soft magnetic behavior of the nanocrystalline ribbons are discussed in the light of random anisotropy model, whereas the MI effect is discussed through standard skin effect in electrodynamics. - Highlights: • Microstructure was tuned by controlled crystallization to obtain superior magnetic properties. • Improved MI in the heat-treated ribbons is attributed to the superior electromagnetic properties. • Correlation between MI and magnetic properties of nc-Fe 68.5 Si 18.5 Cu 1 Nb 3 B 9 is established. • All the observed features are consistent with the proposed random anisotropy model

The effect of boron doping on the magnetostriction of Fe-Ga and Fe-Al samples

Energy Technology Data Exchange (ETDEWEB)

Doerr, Mathias; Granovsky, Sergey; Loewenhaupt, Michael [TU Dresden, Institut fuer Festkoerperphysik (Germany); Teodoro dos Santos, Claudio; Bormio-Nunes, Cristina [Universidade de Sao Paulo, Escola de Engenharia de Lorena, Lorena (Brazil)

2011-07-01

Fe-Ga (Galfenol) based alloys are used in a number of magnetomechanical applications because of the high magnetostriction values of more than 100 ppm at room temperature. The addition of boron inhibits the crystallographic ordering of the alloys and stabilizes the disordered A2 structure that is responsible for the high striction values. Especially, polycrystalline and rapid cooled Fe-Ga-B and Fe-Al-B samples were investigated in our project. Magnetization and longitudinal as well as transversal magnetostriction measurements at temperatures of 5 K, 80 K and 300 K show a similar effect of the amount of B as found on single crystals. Whereas the saturation magnetization is nearly the same and mainly determined by the Fe content, a dependence of the striction values on the amount of B is visible (more than 10% in the Fe-Al system). The results illustrate the influence of the stoichiometry and the preparation conditions on the magnetomechanical properties.

Effect of Y addition on crystallization behavior and soft-magnetic properties of Fe{sub 78}Si{sub 9}B{sub 13} ribbons

Energy Technology Data Exchange (ETDEWEB)

Zhanwei, Liu; Dunbo, Yu, E-mail: yudb2008@126.com; Kuoshe, Li; Yang, Luo; Chao, Yuan; Zilong, Wang; Liang, Sun; Kuo, Men

2017-08-15

Highlights: • Thermal stability of Fe-Si-B amorphous alloy is enhanced by Y addition. • Y addition can improve soft magnetic properties of Fe-Si-B amorphous alloy. • Decomposition of metastable Fe{sub 3}B phase is related to Y content in Fe-Si-B matrix. - Abstract: A series of amorphous Fe-Si-B ribbons with various Y addition were prepared by melt-spinning. The effect of Y addition on crystallization behavior, thermal and magnetic properties was systematically investigated. With the increase of Y content, the initial crystallization temperature shifted to a higher temperature, indicating that the thermal stability of amorphous state in Fe-Si-B-Y ribbon is enhanced compared to that of Fe-Si-B alloy. Meanwhile, compared to the two exothermic peaks in the samples with lower Y content, a new exothermic peak was found in the ribbons with Y content higher than 1 at%, which corresponded to the decomposition of metastable Fe{sub 3}B phase. Among all the alloys, Fe{sub 76.5}Si{sub 9}B{sub 13}Y{sub 1.5} alloy exhibits optimized magnetic properties, with high saturation magnetization M{sub s} of 187 emu/g and low coercivity H{sub cJ} of 7.6 A/m.

Enhancement in (BHmax of PLD-made isotropic Nd-Fe-B thick film magnets deposited on Si substrates

Directory of Open Access Journals (Sweden)

M. Nakano

2017-05-01

Full Text Available Increase in Nd contents of a PLD-made isotropic Nd-Fe-B thick-film magnet enabled us to enhance the thickness of the film magnet deposited on a Si substrate because the linear expansion coefficient of Nd is an intermediate value between Nd2Fe14B and Si. The large amount of Nd, however, degraded the residual magnetic polarization and (BHmax. In the study, we reduced the Nd contents of each Nd-Fe-B film by inserting a Nd or a Nd-rich Nd-Fe-B buffer layer between a Nd-Fe-B film and a Si substrate in order to suppress the mechanical destruction together with the improvement in magnetic properties. It was found that the mechanical property of a Nd-Fe-B film comprising the Nd-Fe-B buffer layer in the thickness range from 10 to 60 μm was superior than that of a sample with the Nd buffer layer. Resultantly, an average (BHmax value of Nd-Fe-B films with each Nd-Fe-B buffer layer deposited on Si substrates could be enhanced by approximately 15 kJ/m3 compared to that of non-buffer-layered films.

Characteristics of magnetic tunnel junctions comprising ferromagnetic amorphous NiFeSiB layers

International Nuclear Information System (INIS)

Chun, B.S.; Kim, Y.K.; Hwang, J.Y.; Yim, H.I.; Rhee, J.R.; Kim, T.W.

2007-01-01

Magnetic tunnel junctions (MTJs), which consisted of amorphous ferromagnetic Ni 16 Fe 62 Si 8 B 14 free layers, were investigated. NiFeSiB has a lower saturation magnetization (M s : 800 emu/cm 3 ) than Co 90 Fe 10 and a higher anisotropy constant (K u : 2700 erg/cm 3 ) than Ni 80 Fe 20 . By increasing the free layer thickness, the tunnel magnetoresistance (TMR) ratio of up to 41% was achieved and it exhibited a much lower switching field (H sw ) than the conventionally used CoFe free layer MTJ. Furthermore, by inserting a thin CoFe layer (1 nm) at the tunnel barrier/NiFeSiB interface, the TMR ratio and switching squareness were enhanced

Corrosion resistance of the NdFeB coated with AlN/SiC bilayer thin films by magnetron sputtering under different environments

International Nuclear Information System (INIS)

Tao, Lei; Li, Heqin; Shen, Jiong; Qiao, Kai; Wang, Wei; Zhou, Chu; Zhang, Jing; Tang, Qiong

2015-01-01

The AlN/SiC bilayer and SiC monolayer thin films were deposited on sintered NdFeB by RF magnetron sputtering to improve the corrosion resistance. Their structures and morphologies were studied by XRD and AFM and SEM. The corrosion behaviors of AlN/SiC and SiC-coated NdFeB in 3.5 wt% NaCl, 20 wt% NaOH and 0.1 mol/L H 2 SO 4 solutions were characterized with potentiodynamic polarization curves. The results show that AlN/SiC and SiC thin films can evidently improve the corrosion resistance of NdFeB, and the AlN/SiC films have the better resistance than the SiC film. - Highlights: • SiC monolayer and AlN/SiC bilayer thin films have been prepared on NdFeB at room temperature by RF magnetron sputtering. • NdFeB coated with AlN/SiC bilayer films has more corrosion resistance than that coated with SiC monolayer film under different environments. • The grains of the AlN/SiC bilayer films are finer and the surface roughness is lower than that of SiC monolayer film

Corrosion resistance of the NdFeB coated with AlN/SiC bilayer thin films by magnetron sputtering under different environments

Energy Technology Data Exchange (ETDEWEB)

Tao, Lei [School of Materials Science and Engineering, Hefei University of Technology, Anhui Hefei 230009 (China); Li, Heqin, E-mail: lhqjs@hfut.edu.cn [School of Materials Science and Engineering, Hefei University of Technology, Anhui Hefei 230009 (China); Shen, Jiong [Earth-Panda Advance Magnetic Material Co., Ltd., Anhui Lujiang 231500 (China); Qiao, Kai; Wang, Wei; Zhou, Chu [School of Materials Science and Engineering, Hefei University of Technology, Anhui Hefei 230009 (China); Zhang, Jing; Tang, Qiong [School of Materials Science and Engineering, Hefei University of Technology, Anhui Hefei 230009 (China); School of Electronic Science and Applied Physics, Hefei University of Technology, Anhui Hefei 230009 (China)

2015-02-01

The AlN/SiC bilayer and SiC monolayer thin films were deposited on sintered NdFeB by RF magnetron sputtering to improve the corrosion resistance. Their structures and morphologies were studied by XRD and AFM and SEM. The corrosion behaviors of AlN/SiC and SiC-coated NdFeB in 3.5 wt% NaCl, 20 wt% NaOH and 0.1 mol/L H{sub 2}SO{sub 4} solutions were characterized with potentiodynamic polarization curves. The results show that AlN/SiC and SiC thin films can evidently improve the corrosion resistance of NdFeB, and the AlN/SiC films have the better resistance than the SiC film. - Highlights: • SiC monolayer and AlN/SiC bilayer thin films have been prepared on NdFeB at room temperature by RF magnetron sputtering. • NdFeB coated with AlN/SiC bilayer films has more corrosion resistance than that coated with SiC monolayer film under different environments. • The grains of the AlN/SiC bilayer films are finer and the surface roughness is lower than that of SiC monolayer film.

Silicon electrodeposition from chloride-fluoride melts containing K2SiF6 and SiO2

Directory of Open Access Journals (Sweden)

Zhuk Sergey I.

2017-01-01

Full Text Available Silicon electrodeposition on glassy carbon from the KF-KCl-K2SiF6, KF-KCl-K2SiF6-KOH and KF-KCl-K2SiF6-SiO2 melts was studied by the cyclic voltammetry. Тhe electroreduction of Si(IV to metallic Si was observed as a single 4-electron wave under all considered conditions. The reactions of cathode reduction of silicon from fluoride and oxyfluoride complexes were suggested. It was shown that the process can be controlled by the preliminary transformation of SiO44- to SiF62- and SiOxFyz-. The influence of the current density on structure and morphology of silicon deposits obtained during galvanostatic electrolysis of the KF-KCl-K2SiF6-SiO2 melt was studied.

Effect of Carbon Doping on the Structure and Magnetic Phase Transition in (Mn,Fe2(P,Si))

Science.gov (United States)

Thang, N. V.; Yibole, H.; Miao, X. F.; Goubitz, K.; van Eijck, L.; van Dijk, N. H.; Brück, E.

2017-08-01

Given the potential applications of (Mn,Fe2(P,Si))-based materials for room-temperature magnetic refrigeration, several research groups have carried out fundamental studies aimed at understanding the role of the magneto-elastic coupling in the first-order magnetic transition and further optimizing this system. Inspired by the beneficial effect of the addition of boron on the magnetocaloric effect of (Mn,Fe2(P,Si))-based materials, we have investigated the effect of carbon (C) addition on the structural properties and the magnetic phase transition of Mn_{1.25}Fe_{0.70}P_{0.50}Si_{0.50}C_z and Mn_{1.25}Fe_{0.70}P_{0.55}Si_{0.45}C_z compounds by x-ray diffraction, neutron diffraction and magnetic measurements in order to find an additional control parameter to further optimize the performance of these materials. All samples crystallize in the hexagonal Fe_2P-type structure (space group P-62m), suggesting that C doping does not affect the phase formation. It is found that the Curie temperature increases, while the thermal hysteresis and the isothermal magnetic entropy change decrease by adding carbon. Room-temperature neutron diffraction experiments on Mn_{1.25}Fe_{0.70}P_{0.55}Si_{0.45}C_z compounds reveal that the added C substitutes P/Si on the 2 c site and/or occupies the 6 k interstitial site of the hexagonal Fe_2P-type structure.

Fabrication of hierarchical graphene@Fe3O4@SiO2@polyaniline quaternary composite and its improved electrochemical performance

International Nuclear Information System (INIS)

Wang, Lei; Zhu, Jianfeng; Yang, Haibo; Wang, Fen; Qin, Yi; Zhao, Ting; Zhang, Pei

2015-01-01

Highlights: • Graphene@Fe 3 O 4 @SiO 2 @polyaniline hierarchical structures have been fabricated. • The reflection loss of the composites is below −10 dB in 10.5–16.3 GHz. • The maximum absorption of the composites is −40.7 dB at 12.5 GHz. - Abstract: Hierarchical graphene@Fe 3 O 4 @SiO 2 @polyaniline quaternary composite is fabricated subtly. Their microwave absorption properties are also investigated in the 2–18 GHz frequency range. Transmission electron microscopy (TEM) and scanning electron microscope (SEM) reveal that Fe 3 O 4 @SiO 2 @polyaniline core@shell@shell heteronanostructures are densely covered on the surfaces of graphene, and form hierarchical structures. Compared with two-dimensional binary nanocomposites of graphene@Fe 3 O 4 , the hierarchical structure exhibits enhanced EM absorption in terms of both the maximum reflection loss value and the absorption bandwidth. The maximum reflection loss value can reach −40.7 dB at 12.5 GHz with a thickness of 2.5 mm and the bandwidth corresponding to the reflection loss below −10 dB is 5.8 GHz (from 10.5 to 16.3 GHz)

Microstructure, soft magnetic properties and applications of amorphous Fe-Co-Si-B-Mo-P alloy

Science.gov (United States)

Hasiak, Mariusz; Miglierini, Marcel; Łukiewski, Mirosław; Łaszcz, Amadeusz; Bujdoš, Marek

2018-05-01

DC thermomagnetic properties of Fe51Co12Si16B8Mo5P8 amorphous alloy in the as-quenched and after annealing below crystallization temperature are investigated. They are related to deviations in the microstructure as revealed by Mössbauer spectrometry. Study of AC magnetic properties, i.e. hysteresis loops, relative permeability and core losses versus maximum induction was aimed at obtaining optimal initial parameters for simulation process of a resonant transformer for a rail power supply converter. The results obtained from numerical analyses including core losses, winding losses, core mass, and dimensions were compared with the same parameters calculated for Fe-Si alloy and ferrite. Moreover, Steinmetz coefficients were also calculated for the as-quenched Fe51Co12Si16B8Mo5P8 amorphous alloy.

Effect of boron additions and processing on microstructure and mechanical properties of a titanium alloy Ti–6.5Al–3.3Mo–0.3Si

Energy Technology Data Exchange (ETDEWEB)

Imayev, V.M., E-mail: vimayev@mail.ru; Gaisin, R.A.; Imayev, R.M.

2015-08-12

The effects of boron additions in an amount of 0.1–2 wt%, thermomechanical processing and heat treatment on microstructure and mechanical properties of a two-phase titanium alloy Ti–6.5Al–3.3Mo–0.3Si alloy have been investigated. Depending on the boron amount, the materials under study were divided into two groups: (1) boron modified alloys containing ~0.1 wt% of boron and (2) discontinuously reinforced metal matrix Ti–TiB based composites containing 1.5–2 wt% of boron. Boron additions led to formation of TiB whiskers, which were predominantly located along boundaries of prior β-grains and α-colonies resulting in refined as-cast microstructure. Multiple 3D forging at T=650–700 °C applied for the boron modified alloys resulted in formation of ultrafine-grained microstructure and intensive breaking of TiB whiskers. Tensile properties of the Ti–6.5Al–3.3Mo–0.3Si–0.2 wt% B alloy after multiple 3D forging followed by β-heat treatment were found to be appreciably higher than those of the alloy free of boron after the same processing route that was ascribed to better controlling the β-grain size during β heat treatment. The composite materials were subjected to multiple isothermal 2D forging at T=950 °C that provided effective alignment of TiB whiskers while retaining their high aspect ratio. The hot forged composites demonstrated appreciably higher strength, creep resistance in comparison with those of the base alloy without drastic reduction in ductility. The effect of TiB whiskers orientation and morphology on the tensile properties of the composite materials is discussed.

Synthesis, electronic transport and optical properties of Si:α-Fe2O3 single crystals

NARCIS (Netherlands)

Rettie, A.J.E.; Chemelewski, W.D.; Wygant, B.R.; Lindemuth, J.; Lin, J.F.; Eisenberg, D.; Brauer, C.S.; Johnson, T.J.; Beiswenger, T.N.; Ash, R.D.; Li, X.; Zhou, J.; Mullins, C.B.

2016-01-01

We report the synthesis of silicon-doped hematite (Si:alpha-Fe2O3) single crystals via chemical vapor transport, with Si incorporation on the order of 1019 cm(-3). The conductivity, Seebeck and Hall effect were measured in the basal plane between 200 and 400 K. Distinct differences in electron

Reaction of LaB6 with MoSi2

International Nuclear Information System (INIS)

Ordan'yan, S.S.; Gardagina, E.N.; Barabanova, S.N.

1989-01-01

Investigation results of interaction in LaB 6 -MoSi 2 system within wide concentration and temperature ranges are presented. LaB 6 and MoSi 2 powders were preliminary squeezed out in vacuum at 1470 K. Presence of LaB 6 and MoSi 2 initial phases only is determined using X-ray pahse analysis of sintered and melted specimens of all compositions. Traces of MoB (probably, due to quick crystallization after melting and partial evaporation of silicon from the melt) are detected in some alloys exposed to melting

Influence of Al addition on the thermal stability and mechanical properties of Fe76.5-xCu1Si13.5b9Alx amorphous alloys

Directory of Open Access Journals (Sweden)

Sun Y.Y.

2012-01-01

Full Text Available This paper fabricated Fe76.5-xCu1Si13.5B9Alx (x=0,1,2,3,5,7 at.% amorphous ribbons using singleroller melt-spinning method. The effect of Al content on the thermal stability and mechanical properties was investigated. The results indicated that Al addition have little effect on the amorphous formation ability of the alloys. On the other hand, increasing the Al content can substantially increase Tx2, which corresponds to the crystallization of Fe borides. Nanoindentation tests indicated that hardness of the alloys increase slightly with increasing the Al content, and Young’s modulus has a complicated relationship with the Al content.

Molecular dynamics investigation of Si–B–N ceramics: effects of boron content

International Nuclear Information System (INIS)

Liao, Ningbo; Xue, Wei; Zhang, Miao

2012-01-01

Silicon boron nitride (SiBN) has the advantages of Si 3 N 4 at high temperatures and also advantageous anti-oxidation and mechanical properties. While the synthesis methods of this new material are limited to the sol–gel route, understanding the structural and mechanical properties of SiBN becomes essential in order to control the properties under fabrication. In this study, atomistic models of SiBN ceramics with different boron content were built by melt-quench technologies. Pair distribution function and angular distribution function were applied to study the structural properties, and tensile loading was applied in order to obtain the stress–strain curves and mechanical properties of SiBN. Phase separation of SiN-rich region and BN-rich region was observed for SiBN with different B content. With B content increasing, the BN-rich region tended to be larger and the SiN-rich region became smaller. Si 3 B 3 N 7 showed sharper and narrower peaks on distribution functions and larger Young's modulus than Si 3 BN 5 and Si 3 B 5 N 9 . (paper)

Moissanite (SiC) with metal-silicide and silicon inclusions from tuff of Israel: Raman spectroscopy and electron microscope studies

Science.gov (United States)

Dobrzhinetskaya, Larissa; Mukhin, Pavel; Wang, Qin; Wirth, Richard; O'Bannon, Earl; Zhao, Wenxia; Eppelbaum, Lev; Sokhonchuk, Tatiana

2018-06-01

Here, we present studies of natural SiC that occurs in situ in tuff related to the Miocene alkaline basalt formation deposited in northern part of Israel. Raman spectroscopy, SEM and FIB-assisted TEM studies revealed that SiC is primarily hexagonal polytypes 4H-SiC and 6H-SiC, and that the 4H-SiC polytype is the predominant phase. Both SiC polytypes contain crystalline inclusions of silicon (Sio) and inclusions of metal-silicide with varying compositions (e.g. Si58V25Ti12Cr3Fe2, Si41Fe24Ti20Ni7V5Zr3, and Si43Fe40Ni17). The silicides crystal structure parameters match Si2TiV5 (Pm-3m space group, cubic), FeSi2Ti (Pbam space group, orthorhombic), and FeSi2 (Cmca space group, orthorhombic) respectively. We hypothesize that SiC was formed in a local ultra-reduced environment at respectively shallow depths (60-100 km), through a reaction of SiO2 with highly reducing fluids (H2O-CH4-H2-C2H6) arisen from the mantle "hot spot" and passing through alkaline basalt magma reservoir. SiO2 interacting with the fluids may originate from the walls of the crustal rocks surrounding this magmatic reservoir. This process led to the formation of SiC and accompanied by the reducing of metal-oxides to native metals, alloys, and silicides. The latter were trapped by SiC during its growth. Hence, interplate "hot spot" alkali basalt volcanism can now be included as a geological environment where SiC, silicon, and silicides can be found.

Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

International Nuclear Information System (INIS)

Zeng, Xiangbin; Wen, Xixing; Sun, Xiaohu; Liao, Wugang; Wen, Yangyang

2016-01-01

Boron-doped zinc oxide (BZO) films were grown by metal organic chemical vapor deposition. The influence of B_2H_6 flow rate and substrate temperature on the microstructure, optical, and electrical properties of BZO films was investigated by X-ray diffraction spectrum, scanning electron microscope, optical transmittance spectrum, and Hall measurements. The BZO films with optical transmittance above 85% in the visible and infrared light range, resistivity of 0.9–1.0 × 10"−"3 Ω cm, mobility of 16.5–25.5 cm"2/Vs, and carrier concentration of 2.2–2.7 × 10"2"0 cm"−"3 were deposited under optimized conditions. The optimum BZO films were applied on the bifacial BZO/p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n"+-type a-Si:H/BZO heterojunction solar cell as both front and back transparent electrodes. Meanwhile, the bifacial heterojunction solar cell with indium tin oxide (ITO) as both front and back transparent electrodes was fabricated. The efficiencies of 17.788% (open-circuit voltage: 0.628 V, short-circuit current density: 41.756 mA/cm"2 and fill factor: 0.678) and 16.443% (open-circuit voltage: 0.590 V, short-circuit current density: 36.515 mA/cm"2 and fill factor: 0.762) were obtained on the a-Si/c-Si heterojunction solar cell with BZO and ITO transparent electrodes, respectively. - Highlights: • Boron-doped zinc oxide films with low resistivity were fabricated. • The boron-doped zinc oxide films have the high transmittance. • B-doped ZnO film was applied in a-Si:H/c-Si solar cell as transparent electrodes. • The a-Si:H/c-Si solar cell with efficiency of 17.788% was obtained.

Effect of Si on the glass-forming ability, thermal stability and magnetic properties of Fe-Co-Zr-Mo-W-B alloys

Energy Technology Data Exchange (ETDEWEB)

Wang, W.-M. [Institute for Metallic Materials, IFW Dresden, P.O. 270016, Dresden D-01171 (Germany); Key Lab of Liquid Structure and Heredity of Materials, Shandong University, Jinan 250061 (China); Gebert, A. [Institute for Metallic Materials, IFW Dresden, P.O. 270016, Dresden D-01171 (Germany)], E-mail: a.gebert@ifw-dresden.de; Roth, S.; Kuehn, U.; Schultz, L. [Institute for Metallic Materials, IFW Dresden, P.O. 270016, Dresden D-01171 (Germany)

2008-07-14

This paper presents investigations on the effect of Si on the glass-forming ability, thermal stability and magnetic properties of the Fe-Co-Zr-Mo-W-B samples (group I: Fe{sub 60}Co{sub 8}Zr{sub 10}Mo{sub 5}W{sub 2}B{sub 15-x}Si{sub x}, 1 {<=} x {<=} 4; group II: Fe{sub 60}Co{sub 8}Zr{sub 10-x}Mo{sub 5}W{sub 2}B{sub 15}Si{sub x}, 0 {<=} x {<=} 4; group III: Fe{sub 60}Co{sub 8}Zr{sub 8}Mo{sub 5}W{sub 2}B{sub 17-x}Si{sub x}, 0 {<=} x {<=} 2) prepared by melt spinning, injection casting, and centrifugal casting methods. It is found that the glass-forming ability (GFA) of the alloys in group I is more deteriorated than that in group II, and that the alloys in group III can be cast into the rods of 1-3 mm diameter without crystalline reflections in their XRD patterns. For the amorphous ribbons and rods, a non-monotonic change of the nearest neighbour distance r{sub 1} with increasing Si content c{sub Si} was detected, which is parallel to that of the glass transition and crystallization temperatures T{sub g} and T{sub x}, but opposite to that of the magnetization at room temperature M{sub RT} and the Curie temperature T{sub c}. This correlation can be interpreted by a structure model presuming that iron atoms appear simultaneously in two types of local structures in the amorphous samples.

Evolution of Fe environments in mechanically alloyed Fe–Nb–(B) compositions

Energy Technology Data Exchange (ETDEWEB)

Blázquez, J.S., E-mail: jsebas@us.es; Ipus, J.J.; Conde, C.F.; Conde, A.

2014-12-05

Highlights: • Nb is rapidly incorporated to the nanocrystalline FeNb(B) matrix. • B inclusions remains even after long milling times. • B is helpful to enhance the comminuting of crystallites. - Abstract: Nanocrystalline alloys of nominal composition Fe{sub 85}Nb{sub 5}B{sub 10} were produced by mechanical alloying from a mixture of elemental powders. Two commercial boron structures were used: amorphous and crystalline. In addition, a third composition Fe{sub 94.4}Nb{sub 5.6} was prepared for comparison. X-ray diffraction and Mössbauer spectroscopy were used to describe the evolution of the microstructure and Fe environments as a function of the milling time. Whereas Nb is rapidly incorporated into the nanocrystalline matrix, boron inclusions remain even after long milling times. The presence of boron is found to enhance the comminuting of crystallites.

Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

Energy Technology Data Exchange (ETDEWEB)

Zeng, Xiangbin, E-mail: eexbzeng@mail.hust.edu.cn; Wen, Xixing; Sun, Xiaohu; Liao, Wugang; Wen, Yangyang

2016-04-30

Boron-doped zinc oxide (BZO) films were grown by metal organic chemical vapor deposition. The influence of B{sub 2}H{sub 6} flow rate and substrate temperature on the microstructure, optical, and electrical properties of BZO films was investigated by X-ray diffraction spectrum, scanning electron microscope, optical transmittance spectrum, and Hall measurements. The BZO films with optical transmittance above 85% in the visible and infrared light range, resistivity of 0.9–1.0 × 10{sup −3} Ω cm, mobility of 16.5–25.5 cm{sup 2}/Vs, and carrier concentration of 2.2–2.7 × 10{sup 20} cm{sup −3} were deposited under optimized conditions. The optimum BZO films were applied on the bifacial BZO/p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n{sup +}-type a-Si:H/BZO heterojunction solar cell as both front and back transparent electrodes. Meanwhile, the bifacial heterojunction solar cell with indium tin oxide (ITO) as both front and back transparent electrodes was fabricated. The efficiencies of 17.788% (open-circuit voltage: 0.628 V, short-circuit current density: 41.756 mA/cm{sup 2} and fill factor: 0.678) and 16.443% (open-circuit voltage: 0.590 V, short-circuit current density: 36.515 mA/cm{sup 2} and fill factor: 0.762) were obtained on the a-Si/c-Si heterojunction solar cell with BZO and ITO transparent electrodes, respectively. - Highlights: • Boron-doped zinc oxide films with low resistivity were fabricated. • The boron-doped zinc oxide films have the high transmittance. • B-doped ZnO film was applied in a-Si:H/c-Si solar cell as transparent electrodes. • The a-Si:H/c-Si solar cell with efficiency of 17.788% was obtained.

On the correlation between the morphology of α and its crystallographic orientation relationship with TiB and β in boron-containing Ti–5Al–5Mo–5V–3Cr–0.5Fe alloy

International Nuclear Information System (INIS)

Nandwana, P.; Nag, S.; Hill, D.; Tiley, J.; Fraser, H.L.; Banerjee, R.

2012-01-01

While the role of borides on the microstructure of titanium alloys has been discussed in many previous reports, this paper presents the first experimental evidence of (i) the three-dimensional geometry of α precipitates confirming their equiaxed morphology, as determined by reconstruction of serially sectioned scanning electron microscopy images; and (i) the influence of the crystallographic orientation relationship between β, TiB and α phases on the morphology of α precipitates, investigated via detailed orientation microscopy studies on a boron-containing version of the commercial Ti–5Al–5Mo–5V–3Cr–0.5Fe alloy Ti5553.

The Impact of Metallic Impurities on Minority Carrier Lifetime in High Purity N-type Silicon

Science.gov (United States)

Yoon, Yohan

Boron-doped p-type silicon is the industry standard silicon solar cell substrate. However, it has serious limitations: iron boron (Fe-B) pairs and light induced degradation (LID). To suppress LID, the replacement of boron by gallium as a p-type dopant has been proposed. Although this eliminates B-O related defects, gallium-related pairing with iron, oxygen, and carbon can reduce lifetime in this material. In addition resistivity variations are more pronounced in gallium doped ingots, however Continuous-Czochralski (c-Cz) growth technologies are being developed to overcome this problem. In this work lifetime limiting factors and resistivity variations have been investigated in this material. The radial and axial variations of electrically active defects were observed using deep level transient spectroscopy (DLTS) these have been correlated to lifetime and resistivity variations. The DLTS measurements demonstrated that iron-related pairs are responsible for the lifetime variations. Specifically, Fe-Ga pairs were found to be important recombination sites and are more detrimental to lifetime than Fei. Typically n-type silicon has a higher minority carrier lifetime than p-type silicon with similar levels of contamination. That is because n-type silicon is more tolerant to metallic impurities, especially Fe. Also, it has no serious issues in relation to lifetime degradation, such as FeB pairs and light-induced degradation (LID). However, surface passivation of the p + region in p+n solar cells is much more problematic than the n+p case where silicon nitride provides very effective passivation of the cell. SiO2 is the most effective passivation for n type surfaces, but it does not work well on B-doped surfaces, resulting in inadequate performance. Al2O3 passivation layer suggested for B-doped emitters. With this surface passivation layer a 23.2 % conversion efficiency has been achieved. After this discovery n-type silicon is now being seriously considered for

Microstructure, soft magnetic properties and applications of amorphous Fe-Co-Si-B-Mo-P alloy

Directory of Open Access Journals (Sweden)

Mariusz Hasiak

2018-05-01

Full Text Available DC thermomagnetic properties of Fe51Co12Si16B8Mo5P8 amorphous alloy in the as-quenched and after annealing below crystallization temperature are investigated. They are related to deviations in the microstructure as revealed by Mössbauer spectrometry. Study of AC magnetic properties, i.e. hysteresis loops, relative permeability and core losses versus maximum induction was aimed at obtaining optimal initial parameters for simulation process of a resonant transformer for a rail power supply converter. The results obtained from numerical analyses including core losses, winding losses, core mass, and dimensions were compared with the same parameters calculated for Fe-Si alloy and ferrite. Moreover, Steinmetz coefficients were also calculated for the as-quenched Fe51Co12Si16B8Mo5P8 amorphous alloy.

Study of shallow junction formation by boron-containing cluster ion implantation of silicon and two-stage annealing

Science.gov (United States)

Lu, Xin-Ming

Shallow junction formation made by low energy ion implantation and rapid thermal annealing is facing a major challenge for ULSI (ultra large scale integration) as the line width decreases down to the sub micrometer region. The issues include low beam current, the channeling effect in low energy ion implantation and TED (transient enhanced diffusion) during annealing after ion implantation. In this work, boron containing small cluster ions, such as GeB, SiB and SiB2, was generated by using the SNICS (source of negative ion by cesium sputtering) ion source to implant into Si substrates to form shallow junctions. The use of boron containing cluster ions effectively reduces the boron energy while keeping the energy of the cluster ion beam at a high level. At the same time, it reduces the channeling effect due to amorphization by co-implanted heavy atoms like Ge and Si. Cluster ions have been used to produce 0.65--2keV boron for low energy ion implantation. Two stage annealing, which is a combination of low temperature (550°C) preannealing and high temperature annealing (1000°C), was carried out to anneal the Si sample implanted by GeB, SiBn clusters. The key concept of two-step annealing, that is, the separation of crystal regrowth, point defects removal with dopant activation from dopant diffusion, is discussed in detail. The advantages of the two stage annealing include better lattice structure, better dopant activation and retarded boron diffusion. The junction depth of the two stage annealed GeB sample was only half that of the one-step annealed sample, indicating that TED was suppressed by two stage annealing. Junction depths as small as 30 nm have been achieved by two stage annealing of sample implanted with 5 x 10-4/cm2 of 5 keV GeB at 1000°C for 1 second. The samples were evaluated by SIMS (secondary ion mass spectrometry) profiling, TEM (transmission electron microscopy) and RBS (Rutherford Backscattering Spectrometry)/channeling. Cluster ion implantation

Preparation of MoB and MoB-MoSi2 composites by combustion synthesis in SHS mode

International Nuclear Information System (INIS)

Yeh, C.L.; Hsu, W.S.

2007-01-01

Combustion synthesis in the mode of self-propagating high-temperature synthesis (SHS) was carried out in the Mo-B and Mo-B-Si systems for the preparation of molybdenum boride MoB and the composite of MoB-MoSi 2 from elemental powder compacts. Under a preheating temperature above 150 deg. C , the reaction of Mo with boron in the sample compact of Mo:B = 1:1 is characterized by a planar combustion front propagating in a self-sustaining and steady manner. As the preheating temperature or sample compaction density increased, combustion temperature was found to increase and the propagation rate of the combustion front was correspondingly enhanced. Moreover, the XRD analysis provides evidence of yielding nearly single-phase α-MoB from the Mo-B sample at equiatomic stoichiometry. In the synthesis of MoB-MoSi 2 composites, the starting stoichiometry of the Mo-B-Si powder compact was varied so as to produce the final composites containing 20-80 mol% MoB. It was also found the increase of flame-front velocity and combustion temperature with increasing MoB content formed in the composite. The composition analysis by XRD shows excellent conversion from the Mo-B-Si powder compact to the MoB-MoSi 2 composite through the SHS reaction; that is, in addition to a small amount of Mo 5 Si 3 , the as-synthesized composite is composed entirely of MoB and MoSi 2

The nonaqueous inhibition of Fe-Co-B-Si amorphous electrodes: An a.c. impedance study in HCl solutions

International Nuclear Information System (INIS)

Habib, K.; Abdullah, A.

1995-01-01

An electrochemical study on Fe-Co-B-Si amorphous electrodes has been conducted. The study was focused on determining the electrochemical impedance spectroscopy (EIS) of four different alloys of Fe-Co-B-Si in various HCl acid solutions. The A.C. impedance and the capacitance of Fe-Co-B-Si, Co-Fe-Ni-B-Si, Co-Fe-Mn-B-Si, and Co-Fe-Ni-Mo-B-Si alloys were obtained in 25, 50, 75 and 100% of HCl acid at room temperature. Electrochemical parameters, i.e., impedance, were found to vary depending on additions of the Ni, Mn, Ni-Mo to Fe-Co-B-Si alloy, the acid concentration, and the nanoscopic surface roughness of the electrodes. Consequently, a correlation between the obtained data is established

Electrical resistivity of nanocrystals in Fe-Al-Ga-P-B-Si-Cu alloy

International Nuclear Information System (INIS)

Pekala, K.; Jaskiewicz, P.; Nowinski, J.L.; Pekala, M.

2003-01-01

In new supercooled Fe 74 Al 4 Ga 2 P 11 B 4 Si 4 Cu 1 alloy the 10 nm size α-Fe(Si) nanocrystals are precipitated. Thermal stability is analyzed by the electron transport and magnetization measurements. Temperature variation of electrical resistivity of nanocrystals is determined and discussed for alloys with different initial crystalline fraction. Possible mechanism inhibiting the grain growth is presented

Textured surface boron-doped ZnO transparent conductive oxides on polyethylene terephthalate substrates for Si-based thin film solar cells

International Nuclear Information System (INIS)

Chen Xinliang; Lin Quan; Ni Jian; Zhang Dekun; Sun Jian; Zhao Ying; Geng Xinhua

2011-01-01

Textured surface boron-doped zinc oxide (ZnO:B) thin films were directly grown via low pressure metal organic chemical vapor deposition (LP-MOCVD) on polyethylene terephthalate (PET) flexible substrates at low temperatures and high-efficiency flexible polymer silicon (Si) based thin film solar cells were obtained. High purity diethylzinc and water vapors were used as source materials, and diborane was used as an n-type dopant gas. P-i-n silicon layers were fabricated at ∼ 398 K by plasma enhanced chemical vapor deposition. These textured surface ZnO:B thin films on PET substrates (PET/ZnO:B) exhibit rough pyramid-like morphology with high transparencies (T ∼ 80%) and excellent electrical properties (Rs ∼ 10 Ω at d ∼ 1500 nm). Finally, the PET/ZnO:B thin films were applied in flexible p-i-n type silicon thin film solar cells (device structure: PET/ZnO:B/p-i-n a-Si:H/Al) with a high conversion efficiency of 6.32% (short-circuit current density J SC = 10.62 mA/cm 2 , open-circuit voltage V OC = 0.93 V and fill factor = 64%).

Anomalous grain growth in nanocrystalline Fe73.5Cu1Nb3Su13.5B9 alloys

DEFF Research Database (Denmark)

Jiang, Jianzhong

1997-01-01

The grain growth of the FeSi phase during the crystallization process of the amorphous Fe73.5Cu1Nb3Si13.5B9 alloy was studied using transmission electron microscopy and x-ray diffractometry. An anomalous grain growth behaviour of the FeSi phase in the samples annealed in temperature range from 743...... to 823 K for one hour was observed, i.e. the grain size of the FeSi phase slightly decreases when the annealing temperature increases from 743 K ot 823 K. The mechanism of the anomalous grain growth may be due to the different nucleation and volume diffusion rates in the samples anneales at low and high...

Moessbauer effect in pure and impurity doped FeSi2

International Nuclear Information System (INIS)

Blaauw, C.; Hanson, H.; Woude, F. van der

1975-01-01

Numerical values of the calculated and experimentally determined Moessbauer parameters for pure β-FeSi 2 and α-FeSi 2 are given. Temperature dependence of isomer shift and quadrupole splitting for the two Fe positions in β-FeSi 2 is presented. For α-FeSi 2 only average values are given. Spectra of Co- and Al-doped FeSi 2 recorded at 80, 293, 557 and 788 K were analyzed in the same manner as those of undoped FeSi 2 . The average values of isomer shift and quadrupole splitting in Co- and Al-doped β-FeSi 2 (α-Fesi 2 ) were compared to those found in undoped β-FeSi 2 (α-FeSi 2 ). All data were based on the room temperature spectra. Changes in Moessbauer parameters of doped samples relative to undoped ones were generally small, being of the order of hundredths of mm/sec. (Z.S.)

Silicon induced Fe deficiency affects Fe, Mn, Cu and Zn distribution in rice (Oryza sativa L.) growth in calcareous conditions.

Science.gov (United States)

Carrasco-Gil, Sandra; Rodríguez-Menéndez, Sara; Fernández, Beatriz; Pereiro, Rosario; de la Fuente, Vicenta; Hernandez-Apaolaza, Lourdes

2018-04-01

A protective effect by silicon in the amelioration of iron chlorosis has recently been proved for Strategy 1 species, at acidic pH. However in calcareous conditions, the Si effect on Fe acquisition and distribution is still unknown. In this work, the effect of Si on Fe, Mn, Cu and Zn distribution was studied in rice (Strategy 2 species) under Fe sufficiency and deficiency. Plants (+Si or-Si) were grown initially with Fe, and then Fe was removed from the nutrient solution. The plants were then analysed using a combined approach including LA-ICP-MS images for each element of interest, the analysis of the Fe and Si concentration at different cell layers of root and leaf cross sections by SEM-EDX, and determining the apoplastic Fe, total micronutrient concentration and oxidative stress indexes. A different Si effect was observed depending on plant Fe status. Under Fe sufficiency, Si supply increased Fe root plaque formation, decreasing Fe concentration inside the root and increasing the oxidative stress in the plants. Therefore, Fe acquisition strategies were activated, and Fe translocation rate to the aerial parts was increased, even under an optimal Fe supply. Under Fe deficiency, +Si plants absorbed Fe from the plaque more rapidly than -Si plants, due to the previous activation of Fe deficiency strategies during the growing period (+Fe + Si). Higher Fe plaque formation due to Si supply during the growing period reduced Fe uptake and could activate Fe deficiency strategies in rice, making it more efficient against Fe chlorosis alterations. Silicon influenced Mn and Cu distribution in root. Copyright © 2018 Elsevier Masson SAS. All rights reserved.

Hot tensile behaviour in silicon-killed boron microalloyed steels

Science.gov (United States)

Chown, Lesley H.; Cornish, Lesley A.

2017-10-01

Low carbon steel for drawing and cold heading applications should have low strength, high ductility and low strain ageing rates. To achieve this, nitrogen must be removed from solid solution, which can be done by low additions of boron. A wire producer had been experiencing occasional problems with severe cracking on silicon-killed, boron steel billets during continuous casting, but the solution was not obvious. Samples from four billets, each from different casts, were removed for analysis and testing. The tested steel compositions were within the specification limits, with boron to nitrogen ratios of 0.40-1.19. Hot ductility testing was performed on a Gleeble 1500 using parameters approximating the capabilities of this particular billet caster. The steel specimens were subjected to in situ melting, then cooled at a rate of 2 C.s-1 to temperatures in the range 750-1250°C, where they were then pulled to failure at a strain rate of 8x10-4 s-1. In this work, it was found that both the boron to nitrogen ratio and the manganese to sulphur ratio influenced the hot ductility and hence the crack susceptibility. Excellent hot ductility was found for B:N ratios above 1.0, which confirmed that the B:N ratio should be above a stoichiometric value of 0.8 to remove all nitrogen from solid solution. TEM analysis showed that coarse BN precipitates nucleated on other precipitates, such as (Fe,Mn)S, which have relatively low melting points, and are detrimental to hot ductility. Low Mn:S ratios of 10 - 12 were shown to promote precipitation of FeS, so a Mn:S > 14 was recommended. A narrower billet surface temperature range for straightening was recommended to prevent transverse surface cracking. Additionally, analysis of industrial casting data showed that the scrap percentage due to transverse cracking increased significantly for Mn:S < 14. An exponential decay relationship between the manganese to sulphur ratio and the average scrap percentage due to transverse cracking was

Defects in boron ion implanted silicon

International Nuclear Information System (INIS)

Wu, W.K.

1975-05-01

The crystal defects formed after post-implantation annealing of B-ion-implanted Si irradiated at 100 keV to a moderate dose (2 x 10 14 /cm 2 ) were studied by transmission electron microscopy. Contrast analysis and annealing kinetics show at least two different kinds of linear rod-like defects along broken bracket 110 broken bracket directions. One kind either shrinks steadily remaining on broken bracket 110 broken bracket at high temperatures (greater than 850 0 C), or transforms into a perfect dislocation loop which rotates toward broken bracket 112 broken bracket perpendicular to its Burgers vector. The other kind shrinks steadily at moderate temperatures (approximately 800 0 C). The activation energy for shrinkage of the latter (3.5 +- 0.1 eV) is the same as that for B diffusion in Si, suggesting that this linear defect is a boron precipitate. There also exist a large number of perfect dislocation loops with Burgers vector a/2broken bracket 110 broken bracket. The depth distribution of all these defects was determined by stereomicroscopy. The B precipitates lying parallel to the foil surfaces are shown to be at a depth of about 3500 +- 600 A. The loops are also at the same depth, but with a broader spread, +-1100 A. Si samples containing B and samples containing no B (P-doped) were irradiated in the 650-kV electron microscope. Irradiation at 620 0 C resulted in the growth of very long linear defects in the B-doped samples but not in the others, suggesting that at 620 0 C Si interstitials produced by the electron beam replace substitutional B some of which precipitates in the form of long rods along broken bracket 110 broken bracket. (DLC)

Structure of Ni-rich Ni--Cr--B--Si coating alloys

International Nuclear Information System (INIS)

Knotek, O.; Lugscheider, E.; Reimann, H.

1975-01-01

The structures of quaternary, nickel-rich Ni--Cr--B--Si alloys were analyzed at a constant boron content of 10 at. percent and a temperature of 850 0 C. The composition range for silicide formation was determined. In these quaternary alloys, known binary nickel silicides, nickel and chromium borides, and the ternary silico-boride Ni 6 Si 2 B were confirmed. A new composition for the W 5 Si 3 -type phase in the Ni--B--Si system was proposed. (U.S.)

Pertumbuhan Bibit Kelapa Sawit (Elais guineensis pada Beberapa Waktu dan Arah Aplikasi Boron (B dan Silikon (Si Melalui Daun

Directory of Open Access Journals (Sweden)

Ageng Kaloko

2015-02-01

Full Text Available Study entitled 'Growth and Drought Resistance Seed Oil Palm (Elaeis guineensis in Multiple Time and Direction Applications Boron (B and Silicon (Si through Leaves' aims to study the effect of B and Si on physiological processes and growth of oil palm seedlings experiencing drought stress and get a way and timing of B and Si is effective to reduce the effect of drought on the decline of physiological processes and growth of oil palm seedlings, Has been implemented in the hamlet Bendosari Madurejo village, Prambanan subdistrict, Sleman; Laboratory of Plant Sciences Faculty of Agriculture, Plant Anatomy Laboratory of the Faculty of Biology and Integrated Research and Testing Laboratory (LPPT Gadjah Mada University Yogyakarta in March to December of 2012. Research using a complete randomized block design (RAKL factorial 3 x 3 1 to 3 blocks as replications. The first factor is the way fertilization, the second factor is the time of fertilization and added a comparison (control without any fertilization treatment. The data analyzed were obtained using Varian Analysis (ANOVA at the level of 5%, and followed by a test of least significant difference LSD. The results showed that the uptake and increased significantly with the application and the leaves by spraying in the morning, afternoon and evening through the direction of the bottom surface, the top and bottom of leaves. However, absorption of Si is only able to increase if the source of Si fertilizer applied by spraying the leaves through a downward direction on the surface of leaves in the evening. Oil palm seedlings can be improved resistance to drought stress with an indication of the form of increasing scores lignin and suberin in roots network as well as the size of the diameter of the rod when compared with control through the application of fertilizer source of B and Si on the leaves by spraying in the morning, afternoon and evening through direction of the bottom surface, the top and bottom

Deformation behavior of an electrodeposited nano-Ni/amorphous Fe78Si9B13 laminated composite sheet

Directory of Open Access Journals (Sweden)

Zhang Kaifeng

2015-01-01

Full Text Available A nano-Ni/amorphous Fe78Si9B13 composite sheet was prepared in the form of three-ply (Ni-Fe78Si9B13-Ni laminated structure by an electrodeposition method. The average grain size of Ni layers is about 50 nm. The interface of laminated composite was investigated with SEM equipped with energy dispersive scanning (EDS and line analysis technique. The laminated composite has a good interfacial bonding between amorphous layer and nano-Ni layers due to the mutual diffusion of atoms in Fe78Si9B13 and Ni layers during the process of electrodeposition. A maximum elongation of 115.5% was obtained when the volume fraction of nano-Ni layers (VNi was 0.77, which is greatly higher than that of monolithic amorphous Fe78Si9B13 ribbon (36.3% tested under the same conditions. Bulging tests were carried out to evaluate plastic forming properties of the Fe78Si9B13/Ni laminated composite. Under the condition of 450 °C, 4.0 MPa and 30 min, a good bulging part with the relative bulging height (RBH of 0.4 was obtained.

Core–shell structured FeSiAl/SiO{sub 2} particles and Fe{sub 3}Si/Al{sub 2}O{sub 3} soft magnetic composite cores with tunable insulating layer thicknesses

Energy Technology Data Exchange (ETDEWEB)

Fan, Xi’an, E-mail: groupfxa@163.com [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Wang, Jian, E-mail: snove418562@163.com [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Wu, Zhaoyang, E-mail: wustwuzhaoyang@163.com [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Li, Guangqiang, E-mail: ligq-wust@mail.wust.edu.cn [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China); Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan, Hubei 430081 (China)

2015-11-15

Graphical abstract: - Highlights: • FeSiAl/SiO{sub 2} core–shell particles and Fe{sub 3}Si/Al{sub 2}O{sub 3} composite cores were prepared. • SiO{sub 2} surrounding FeSiAl were replaced by Al{sub 2}O{sub 3} during sintering process. • Fe{sub 3}Si particles were separated by Al{sub 2}O{sub 3} with tunable thickness in composite cores. • Fe{sub 3}Si/Al{sub 2}O{sub 3} had lower core loss and better frequency stability than FeSiAl core. • The insulating layer between ferromagnetic particles can reduce core loss. - Abstract: FeSiAl/SiO{sub 2} core–shell particles and Fe{sub 3}Si/Al{sub 2}O{sub 3} composite cores with tunable insulating layer thicknesses have been synthesized via a modified Stöber method combined with following high temperature sintering process. Most of the conductive FeSiAl particles could be coated by insulating SiO{sub 2} using the modified Stöber method. During the sintering process, the reaction 4Al + 3SiO{sub 2} ≣ 2α-Al{sub 2}O{sub 3} + 3Si took place and the new Fe{sub 3}Si/Al{sub 2}O{sub 3} composite was formed. The Fe{sub 3}Si/Al{sub 2}O{sub 3} composite cores displayed more excellent soft magnetic properties, better frequency stability at high frequencies, much higher resistivity and lower core loss than the raw FeSiAl core. Based on this, several types of FeSiAl/SiO{sub 2} particles and Fe{sub 3}Si/Al{sub 2}O{sub 3} composite cores with tunable insulating layer thicknesses were selectively prepared by simply varying TEOS contents. The thickness of Al{sub 2}O{sub 3} insulating layer and resistivity of Fe{sub 3}Si/Al{sub 2}O{sub 3} composite cores increased with increasing the TEOS contents, while the permeability and core loss changed in the opposite direction.

Hysteresis properties of conventionally annealed and Joule-heated nanocrystalline Fe73.5Cu1Nb3Si13.5B9 alloys

International Nuclear Information System (INIS)

Tiberto, P.; Basso, V.; Beatrice, C.; Bertotti, G.

1996-01-01

The dependence of magnetic properties on the thermal treatment used to induce the amorphous-to-nanocrystalline transformation in Fe 73.5 Cu 1 Nb 3 Si 13.5 B 9 alloy has been studied. Quasi-static hysteresis loops and initial permeability measurements were performed on nanocrystalline samples obtained by conventional annealing and Joule heating. A comparison between the magnetic properties of nanocrystalline samples obtained by the two heating procedures is presented. (orig.)

Ferromagnetic resonance studies on (Co40Fe40B20)x(SiO2)1-x granular magnetic films

International Nuclear Information System (INIS)

Yildiz, F.; Kazan, S.; Aktas, B.; Tarapov, S.I.; Tagirov, L.; Granovsky, B.

2006-01-01

Magnetic properties of granular (Co 40 Fe 40 B 20 ) x (SiO 2 ) 1-x thin films (x=0.37-0.53) have been studied by ferromagnetic resonance (FMR) technique. Samples have been prepared by ion-beam deposition of Co-Fe-B particles and SiO 2 on sitall ceramic substrate. The FMR measurements have been done for different orientations of DC magnetic field with respect to the sample plane. It was found that the deduced value of effective magnetization from FMR data of the thin granular film is reduced by the volume-filling factor of the bulk saturation magnetization. The overall magnetization changes from 152 to 515G depending on the ratio of the magnetic nanoparticles in the SiO 2 matrix. From angular measurements an induced in-plane uniaxial anisotropy has been obtained due to the preparation of the film conditions as well

Influence of Microstructure on Microhardness of Fe81Si4B13C2 Amorphous Alloy after Thermal Treatment

Czech Academy of Sciences Publication Activity Database

Minić, Dragica, M.; Blagojević, V.; Minić, Dušan M.; Gavrilović, A.; Rafailović, L.; Žák, Tomáš

42A, č. 13 (2011), s. 4106-4112 ISSN 1073-5623 R&D Projects: GA MŠk(CZ) 1M0512 Institutional research plan: CEZ:AV0Z2041904 Keywords : bulk metallic-glass * mechanical properties * Fe81B13SI4C2 alloy * B alloys * alpha-Fe * crystallization * phase * nanocrystallization * behavior Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.545, year: 2011

Study of boron detection limit using the in-air PIGE set-up at LAMFI-USP

International Nuclear Information System (INIS)

Moro, M. V.; Silva, T. F.; Trindade, G. F.; Added, N.; Tabacniks, M. H.

2014-01-01

The quantification of small amounts of boron in materials is of extreme importance in different areas of materials science. Boron is an important contaminant and also a silicon dopant in the semiconductor industry. Boron is also extensively used in nuclear power plants, either for neutron shielding or for safety control and boron is an essential nutrient for life, either vegetable or animal. The production of silicon solar cells, by refining metallurgical-grade silicon (MG-Si) requires the control and reduction of several silicon contaminants to very low concentration levels. Boron is one of the contaminants of solar-grade silicon (SG-Si) that must be controlled and quantified at sub-ppm levels. In the metallurgical purification, boron quantification is usually made by Inductive Coupled Plasma Mass Spectrometry, (ICP-MS) but the results need to be verified by an independent analytical method. In this work we present the results of the analysis of silicon samples by Particle Induced Gamma-Ray Emission (PIGE) aiming the quantification of low concentrations of boron. PIGE analysis was carried out using the in-air external beam line of the Laboratory for Materials Analysis with Ion Beams (LAMFI-USP) by the 10 B(p,αγ( 7 Be nuclear reaction, and measuring the 429 keV γ-ray. The in-air PIGE measurements at LAMFI have a quantification limit of the order of 10 16 at/cm 2

Study of boron detection limit using the in-air PIGE set-up at LAMFI-USP

Science.gov (United States)

Moro, M. V.; Silva, T. F.; Trindade, G. F.; Added, N.; Tabacniks, M. H.

2014-11-01

The quantification of small amounts of boron in materials is of extreme importance in different areas of materials science. Boron is an important contaminant and also a silicon dopant in the semiconductor industry. Boron is also extensively used in nuclear power plants, either for neutron shielding or for safety control and boron is an essential nutrient for life, either vegetable or animal. The production of silicon solar cells, by refining metallurgical-grade silicon (MG-Si) requires the control and reduction of several silicon contaminants to very low concentration levels. Boron is one of the contaminants of solar-grade silicon (SG-Si) that must be controlled and quantified at sub-ppm levels. In the metallurgical purification, boron quantification is usually made by Inductive Coupled Plasma Mass Spectrometry, (ICP-MS) but the results need to be verified by an independent analytical method. In this work we present the results of the analysis of silicon samples by Particle Induced Gamma-Ray Emission (PIGE) aiming the quantification of low concentrations of boron. PIGE analysis was carried out using the in-air external beam line of the Laboratory for Materials Analysis with Ion Beans (LAMFI-USP) by the 10B ( p ,αγ(7Be nuclear reaction, and measuring the 429 keV γ-ray. The in-air PIGE measurements at LAMFI have a quantification limit of the order of 1016 at/cm2.

Structural and Physical Properties of Fe2O3-B2O3-V2O5 Glasses

Directory of Open Access Journals (Sweden)

Virender Kundu

2008-01-01

Full Text Available The structural and physical properties of xFe2O3-(40-x B2O3-60V2O5  (0≤x≤20 glass system have been investigated. The samples were prepared by normal melt-quench technique. The structural changes were inferred by means of FTIR by monitoring the infrared (IR spectra in the spectral range 600–4000 cm-1. The absence of boroxol ring (806 cm-1 in the present glass system suggested that these glasses consist of randomly connected BO3 and BO4 units. The conversion of BO3 to BO4 and VO5 to VO4 tetrahedra along with the formation of non-bridging oxygen's (NBOs attached to boron and vanadium takes place in the glasses under investigation. The density and molar volume of the present glass system were found to depend on Fe2O3 content. DC conductivity of the glass system has been determined in the temperature range 310–500 K. It was found that the general behavior of electrical conductivity was similar for all glass compositions and found to increase with increasing iron content. The parameters such as activation energy, average separation between transition metal ions (TMIs, polaron radius, and so forth have been calculated in adiabatic region and are found consistent with Mott's model of phonon-assisted polaronic hopping.

Synthesis of Mo5SiB2 based nanocomposites by mechanical alloying and subsequent heat treatment

International Nuclear Information System (INIS)

Abbasi, A.R.; Shamanian, M.

2011-01-01

Research highlights: → α-Mo-Mo 5 SiB 2 nanocomposite was produced after 20 h milling of Mo-Si-B powders. → Heat treatment of 5 h MAed powders led to the formation of boride phases. → Heat treatment of 10 h MAed powders led to the formation of Mo 5 SiB 2 phase. → By increasing heat treatment time, quantity of Mo 5 SiB 2 phase increased. → 5 h heat treatment of 20 h MAed powders led to the formation of Mo 5 SiB 2 -based composite. - Abstract: In this study, systematic investigations were conducted on the synthesis of Mo 5 SiB 2 -based alloy by mechanical alloying and subsequent heat treatment. In this regard, Mo-12.5 mol% Si-25 mol% B powder mixture was milled for different times. Then, the mechanically alloyed powders were heat treated at 1373 K for 1 h. The phase transitions and microstructural evolutions of powder particles during mechanical alloying and heat treatment were studied by X-ray diffractometry and scanning electron microscopy. The results showed that the phase evolutions during mechanical alloying and subsequent heat treatment are strongly dependent on milling time. After 10 h of milling, a Mo solid solution was formed, but, no intermetallic phases were detected at this stage. However, an α-Mo-Mo 5 SiB 2 nanocomposite was formed after 20 h of milling. After heat treatment of 5 h mechanically alloyed powders, small amounts of MoB and Mo 2 B were detected and α-Mo-MoB-Mo 2 B composite was produced. On the other hand, heat treatment of 10 h and 20 h mechanically alloyed powders led to the formation of an α-Mo-Mo 5 SiB 2 -MoSi 2 -Mo 3 Si composite. At this point, there is a critical milling time (10 h) for the formation of Mo 5 SiB 2 phase after heat treatment wherein below that time, boride phase and after that time, Mo 5 SiB 2 phase are formed. In the case of 20 h mechanically alloyed powders, by increasing heat treatment time, not only the quantity of α-Mo was reduced and the quantity of Mo 5 SiB 2 was increased, but also new boride