Specific features of the current–voltage characteristics of SiO{sub 2}/4H-SiC MIS structures with phosphorus implanted into silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Mikhaylova, A. I., E-mail: m.aleksey.spb@gmail.com; Afanasyev, A. V.; Ilyin, V. A.; Luchinin, V. V. [St. Petersburg State Electrotechnical University LETI (Russian Federation); Sledziewski, T. [Friedrich–Alexander–Universität Erlangen–Nürnberg (Germany); Reshanov, S. A.; Schöner, A. [Ascatron AB (Sweden); Krieger, M. [Friedrich–Alexander–Universität Erlangen–Nürnberg (Germany)

2016-01-15

The effect of phosphorus implantation into a 4H-SiC epitaxial layer immediately before the thermal growth of a gate insulator in an atmosphere of dry oxygen on the reliability of the gate insulator is studied. It is found that, together with passivating surface states, the introduction of phosphorus ions leads to insignificant weakening of the dielectric breakdown field and to a decrease in the height of the energy barrier between silicon carbide and the insulator, which is due to the presence of phosphorus atoms at the 4H-SiC/SiO{sub 2} interface and in the bulk of silicon dioxide.

Neutron activation analysis for calibration of phosphorus implantation dose

International Nuclear Information System (INIS)

Paul, Rick L.; Simons, David S.

2001-01-01

A feasibility study was undertaken to determine if radiochemical neutron activation analysis (RNAA) can be used to certify the retained dose of phosphorus implanted in silicon, with the goal of producing a phosphorus SRM. Six pieces of silicon, implanted with a nominal phosphorus dose of 8.5x10 14 atoms·cm -2 were irradiated at a neutron flux of 1.05x10 14 cm -2 ·s -1 . The samples were mixed with carrier, dissolved in acid, the phosphorus isolated by chemical separation, and 32 P measured using a beta proportional counter. A mean phosphorus concentration of (8.35±0.20)x10 14 atoms·cm -2 (uncertainty=1 standard deviation) was determined for the six samples, in agreement with the nominal implanted dose

Standard formation enthalpies of mononuclear and cluster oxoanions of boron, silicon and phosphorus

International Nuclear Information System (INIS)

Glybin, V.P.; Svirko, L.K.

2000-01-01

Standard formation enthalpies of boron, silicon and phosphorus are calculated. For calculations thermochemical method in conjunction with potential energy model of oxoanions in approximation of valence-force field of molecules and crystals are used. In the model of valence-force field ion-covalent crystals are considered as population of clusters of molecular type the number of which is equal to number of translation-nonequivalent atoms in the lattice dipped in nonhomogeneous electrostatic field of long-range interactions. For gaseous oxoanions field created by end oxygen atoms or other ones on which negative charge of anions is localized serves as equivalent of nonhomogeneous electrostatic field. In such approach potential energy of oxoanion is equal to sum of energy of electrostatic repulsion of negatively charged atoms and energy of valent element-oxygen bonds in neutral cluster [ru

The influence of excess vacancy generation on the diffusion of ion implanted phosphorus into silicon

International Nuclear Information System (INIS)

Bakowski, A.

1985-01-01

The diffusion of ion implanted phosphorus in silicon has been studied. It was found that the diffusion coefficient is not only dependent on the phosphorus surface concentration (the concentration effect) but also on the conditions at the silicon surface (the surface effect). The phosphorus diffusion coefficient is considerably lower when the silicon surface during annealing is covered with a CVD oxide layer. It is suggested that excess vacancies generated at the surface are reponsible for both the concentration and surface effects. Enhanced phosphorus diffusion is attributed to the disturbance of thermodynamic equilibrium in the crystal through phosphorus-vacancy part formation by vacancies introduced into silicon at the surface. On the basis of the data presented, it can be concluded that two mechanisms for excess vacancy generation are involved. Assuming that phosphorus diffuses via E-centers, calculations of the concentration profiles and the diffusion coefficient were performed for different concentrations and surface conditions. (orig.)

Effects of phosphorus on the electrical characteristics of plasma deposited hydrogenated amorphous silicon carbide thin films

Science.gov (United States)

Alcinkaya, Burak; Sel, Kivanc

2018-01-01

The properties of phosphorus doped hydrogenated amorphous silicon carbide (a-SiCx:H) thin films, that were deposited by plasma enhanced chemical vapor deposition technique with four different carbon contents (x), were analyzed and compared with those of the intrinsic a-SiCx:H thin films. The carbon contents of the films were determined by X-ray photoelectron spectroscopy. The thickness and optical energies, such as Tauc, E04 and Urbach energies, of the thin films were determined by UV-Visible transmittance spectroscopy. The electrical properties of the films, such as conductivities and activation energies were analyzed by temperature dependent current-voltage measurements. Finally, the conduction mechanisms of the films were investigated by numerical analysis, in which the standard transport mechanism in the extended states and the nearest neighbor hopping mechanism in the band tail states were taken into consideration. It was determined that, by the effect of phosphorus doping the dominant conduction mechanism was the standard transport mechanism for all carbon contents.

Determination of phosphorus in semiconductor grade silicon by neutron activation analysis

International Nuclear Information System (INIS)

Jaskolska, H.; Rowinska, L.

1975-01-01

A method of determination of phosphorus in silicon has been elaborated. The separation of phosphorus is based on the extraction of phosphomolybdic complex in the presence of hold-back carriers of Ta and Au. Contamination factors for various impurities were determined. The lower limit of determination equals 3.10 -11 g P. Types of errors in the determination of concentration profiles are discussed. The method meets the following requirements: 1./ It ensures good separation of phosphorus from elements occuring in silicon plates (i.e. Ta, Au, Sn, Ge, Ce, Sb, As, Cu, and Na). 2./ It ensures high chemical yield of phosphorus separation. 3./ It ensures high efficiency of the measurement of 32 P β-activity. 4./ It is simple and rapid, since, for the determination of a implantation profile, it is necessary to analyse several tens of layers. (T.G.)

Dielectric discontinuity at interfaces in the atomic-scale limit: permittivity of ultrathin oxide films on silicon.

Science.gov (United States)

Giustino, Feliciano; Umari, Paolo; Pasquarello, Alfredo

2003-12-31

Using a density-functional approach, we study the dielectric permittivity across interfaces at the atomic scale. Focusing on the static and high-frequency permittivities of SiO2 films on silicon, for oxide thicknesses from 12 A down to the atomic scale, we find a departure from bulk values in accord with experiment. A classical three-layer model accounts for the calculated permittivities and is supported by the microscopic polarization profile across the interface. The local screening varies on length scales corresponding to first-neighbor distances, indicating that the dielectric transition is governed by the chemical grading. Silicon-induced gap states are shown to play a minor role.

Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers.

Science.gov (United States)

Gao, Xuejiao; Guan, Bin; Mesli, Abdelmadjid; Chen, Kaixiang; Dan, Yaping

2018-01-09

It is known that self-assembled molecular monolayer doping technique has the advantages of forming ultra-shallow junctions and introducing minimal defects in semiconductors. In this paper, we report however the formation of carbon-related defects in the molecular monolayer-doped silicon as detected by deep-level transient spectroscopy and low-temperature Hall measurements. The molecular monolayer doping process is performed by modifying silicon substrate with phosphorus-containing molecules and annealing at high temperature. The subsequent rapid thermal annealing drives phosphorus dopants along with carbon contaminants into the silicon substrate, resulting in a dramatic decrease of sheet resistance for the intrinsic silicon substrate. Low-temperature Hall measurements and secondary ion mass spectrometry indicate that phosphorus is the only electrically active dopant after the molecular monolayer doping. However, during this process, at least 20% of the phosphorus dopants are electrically deactivated. The deep-level transient spectroscopy shows that carbon-related defects are responsible for such deactivation.

Directed Atom-by-Atom Assembly of Dopants in Silicon.

Science.gov (United States)

Hudak, Bethany M; Song, Jiaming; Sims, Hunter; Troparevsky, M Claudia; Humble, Travis S; Pantelides, Sokrates T; Snijders, Paul C; Lupini, Andrew R

2018-05-17

The ability to controllably position single atoms inside materials is key for the ultimate fabrication of devices with functionalities governed by atomic-scale properties. Single bismuth dopant atoms in silicon provide an ideal case study in view of proposals for single-dopant quantum bits. However, bismuth is the least soluble pnictogen in silicon, meaning that the dopant atoms tend to migrate out of position during sample growth. Here, we demonstrate epitaxial growth of thin silicon films doped with bismuth. We use atomic-resolution aberration-corrected imaging to view the as-grown dopant distribution and then to controllably position single dopants inside the film. Atomic-scale quantum-mechanical calculations corroborate the experimental findings. These results indicate that the scanning transmission electron microscope is of particular interest for assembling functional materials atom-by-atom because it offers both real-time monitoring and atom manipulation. We envision electron-beam manipulation of atoms inside materials as an achievable route to controllable assembly of structures of individual dopants.

Reactor neutron activation analysis for aluminium in the presence of phosphorus and silicon

International Nuclear Information System (INIS)

Mizumoto, Yoshihiko; Iwata, Shiro; Sasajima, Kazuhisa; Yoshimasu, Fumio; Yase, Yoshiro.

1984-01-01

Reactor neutron activation analysis for aluminium in samples containing phosphorus and silicon was studied. The experiments were performed by using neumatic tube of the Kyoto University Reactor (KUR). At first, the ratios of the 28 Al activity produced from 27 Al(n, γ) 28 Al reaction by thermal neutrons to that from 31 P(n, α) 28 Al reaction by fast neutrons, and to that from 28 Si(n, p) 28 Al reaction were measured by γ-ray spectrometry. With a ratio of about 5 for the thermal to fast neutron flux of KUR, the ratio of the 28 Al activity from aluminium to that from phosphorus was to be 812 +- 7, and to that from silicon 282 +- 3. Secondly, the contributions of 28 Al activities from phosphorus and silicon and the determination limit of aluminium were calculated for various parameters, such as fast neutron flux, thermal to fast neutron flux ratio, amounts of phosphorus and silicon, etc. Thirdly, on the basis of these results, aluminium contents in spinal cords and brains of amyotrophic lateral sclerosis, Parkinsonism-dementia complex and control cases were determined. (author)

The annealing of phosphorus-implanted silicon investigated at low temperatures

International Nuclear Information System (INIS)

Wagner, C.; Burkhardt, F.

1978-01-01

Phosphorus ions are implanted at 50 keV into misaligned silicon crystals at 20 and 300 0 C, respectively. The ion doses used are 8 x 10 13 and 8 x 10 14 cm -2 , respectively. After annealing treatments the electrical properties of the samples are investigated by measuring Hall effect and sheet resistivity in the range from 300 to 4.2 K. The experimental results indicate some problems which must be taken into account for interpreting Hall effect measurements made at room temperature only. Furthermore the results give some new information on the annealing process in phosphorus implanted silicon and the influence of the implantation parameters. (author)

Zero-field optical magnetic resonance study of phosphorus donors in 28-silicon

Science.gov (United States)

Morse, Kevin J.; Dluhy, Phillip; Huber, Julian; Salvail, Jeff Z.; Saeedi, Kamyar; Riemann, Helge; Abrosimov, Nikolay V.; Becker, Peter; Pohl, Hans-Joachim; Simmons, S.; Thewalt, M. L. W.

2018-03-01

Donor spins in silicon are some of the most promising qubits for upcoming solid-state quantum technologies. The nuclear spins of phosphorus donors in enriched silicon have among the longest coherence times of any solid-state system as well as simultaneous high fidelity qubit initialization, manipulation, and readout. Here we characterize the phosphorus in silicon system in the regime of "zero" magnetic field, where a singlet-triplet spin clock transition can be accessed, using laser spectroscopy and magnetic resonance methods. We show the system can be optically hyperpolarized and has ˜10 s Hahn echo coherence times, even for applied static magnetic fields below Earth's field.

Atomic and electronic structure of exfoliated black phosphorus

International Nuclear Information System (INIS)

Wu, Ryan J.; Topsakal, Mehmet; Jeong, Jong Seok; Wentzcovitch, Renata M.; Mkhoyan, K. Andre; Low, Tony; Robbins, Matthew C.; Haratipour, Nazila; Koester, Steven J.

2015-01-01

Black phosphorus, a layered two-dimensional crystal with tunable electronic properties and high hole mobility, is quickly emerging as a promising candidate for future electronic and photonic devices. Although theoretical studies using ab initio calculations have tried to predict its atomic and electronic structure, uncertainty in its fundamental properties due to a lack of clear experimental evidence continues to stymie our full understanding and application of this novel material. In this work, aberration-corrected scanning transmission electron microscopy and ab initio calculations are used to study the crystal structure of few-layer black phosphorus. Directly interpretable annular dark-field images provide a three-dimensional atomic-resolution view of this layered material in which its stacking order and all three lattice parameters can be unambiguously identified. In addition, electron energy-loss spectroscopy (EELS) is used to measure the conduction band density of states of black phosphorus, which agrees well with the results of density functional theory calculations performed for the experimentally determined crystal. Furthermore, experimental EELS measurements of interband transitions and surface plasmon excitations are also consistent with simulated results. Finally, the effects of oxidation on both the atomic and electronic structure of black phosphorus are analyzed to explain observed device degradation. The transformation of black phosphorus into amorphous PO 3 or H 3 PO 3 during oxidation may ultimately be responsible for the degradation of devices exposed to atmosphere over time

Rapid thermal annealing of phosphorus implanted silicon

International Nuclear Information System (INIS)

Lee, Y.H.; Pogany, A.; Harrison, H.B.; Williams, J.S.

1985-01-01

Rapid thermal annealing (RTA) of phosphorus-implanted silicon has been investigated by four point probe, Van der Pauw methods and transmission electron microscopy. The results have been compared to furnace annealing. Experiments show that RTA, even at temperatures as low as 605 deg C, results in good electrical properties with little remnant damage and compares favourably with furnace annealing

Boron, phosphorus, and gallium determination in silicon crystals doped with gallium

International Nuclear Information System (INIS)

Shklyar, B.L.; Dankovskij, Yu.V.; Trubitsyn, Yu.V.

1989-01-01

When studying IR transmission spectra of silicon doped with gallium in the range of concentrations 1 x 10 14 - 5 x 10 16 cm -3 , the possibility to quantity at low (∼ 20 K) temperatures residual impurities of boron and phosphorus is ascertained. The lower determination limit of boron is 1 x 10 12 cm -3 for a sample of 10 nm thick. The level of the impurities in silicon crystals, grown by the Czochralski method and method of crucible-free zone melting, is measured. Values of boron and phosphorus concentrations prior to and after their alloying with gallium are compared

Effects of phosphorus, silicon and sulphur on microstructural evolution in austenitic stainless steels during electron irradiation

International Nuclear Information System (INIS)

Fukuya, K.; Nakahigashi, S.; Ozaki, S.; Shima, S.

1991-01-01

Fe-18Cr-9Ni-1,5Mn austenitic alloys containing phosphorus, silicon and sulphur were irradiated by 1 MeV electrons at 573-773 K. Phosphorus increased the interstitial loop nucleation and decreased the void swelling by increasing void number density and suppressing void growth. Silicon had a similar effect to phosphorus but its effect was weaker than phosphorus. Sulphur enhanced void swelling through increasing the void density. Nickel enrichment at grain boundaries was suppressed only in the alloy containing phosphorus. These phosphorus effects may be explained by a strong interaction with interstitials resulting in a high density of sinks for point defects. (orig.)

Atomic and electronic structure of exfoliated black phosphorus

Energy Technology Data Exchange (ETDEWEB)

Wu, Ryan J.; Topsakal, Mehmet; Jeong, Jong Seok; Wentzcovitch, Renata M.; Mkhoyan, K. Andre, E-mail: mkhoyan@umn.edu [Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455 (United States); Low, Tony; Robbins, Matthew C.; Haratipour, Nazila; Koester, Steven J. [Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455 (United States)

2015-11-15

Black phosphorus, a layered two-dimensional crystal with tunable electronic properties and high hole mobility, is quickly emerging as a promising candidate for future electronic and photonic devices. Although theoretical studies using ab initio calculations have tried to predict its atomic and electronic structure, uncertainty in its fundamental properties due to a lack of clear experimental evidence continues to stymie our full understanding and application of this novel material. In this work, aberration-corrected scanning transmission electron microscopy and ab initio calculations are used to study the crystal structure of few-layer black phosphorus. Directly interpretable annular dark-field images provide a three-dimensional atomic-resolution view of this layered material in which its stacking order and all three lattice parameters can be unambiguously identified. In addition, electron energy-loss spectroscopy (EELS) is used to measure the conduction band density of states of black phosphorus, which agrees well with the results of density functional theory calculations performed for the experimentally determined crystal. Furthermore, experimental EELS measurements of interband transitions and surface plasmon excitations are also consistent with simulated results. Finally, the effects of oxidation on both the atomic and electronic structure of black phosphorus are analyzed to explain observed device degradation. The transformation of black phosphorus into amorphous PO{sub 3} or H{sub 3}PO{sub 3} during oxidation may ultimately be responsible for the degradation of devices exposed to atmosphere over time.

A radioagent method for determination of traces of phosphorus in high-purity silicon

International Nuclear Information System (INIS)

Chen, P.Y.; Chen, J.S.; Sun, H.J.; Yang, M.H.

1985-01-01

The feasibility of the determination of phosphorus at the extreme trace levels in high-purity silicon by radioreagent method is explored. After silicon dissolution with hydrofluoric and nitric acids and matrix volatilization, 12-molybdophosphoric acid is formed by the addition of the reagent, sup(99)MoOsub(4)sup(2-), in nitric acid medium and then extracted into isobutyl acetate. By plotting the phosphorus content against the radioactivity of sup(99)Mo in the organic phase, a linear relationship persisting down to 5 ng is obtained. Special effort was made to eliminate the unreacted sup(99)MoOsub(4)sup(2-) reagent and the optimal control of phosphorus blank introduced through the multistage analytical procedure in order to ensure reliable determination of phosphorus at the ppb level. (author)

Extrinsic doping in silicon revisited

KAUST Repository

Schwingenschlö gl, Udo; Chroneos, Alexander; Grimes, R. W.; Schuster, Cosima

2010-01-01

Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regarding dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.

Extrinsic doping in silicon revisited

KAUST Repository

Schwingenschlögl, Udo

2010-06-17

Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regarding dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.

Double-step annealing and ambient effects on phosphorus implanted emitters in silicon

International Nuclear Information System (INIS)

Koji, T.; Tseng, W.F.; Mayer, J.W.; Suganuma, T.

1979-01-01

Emitters of npn silicon bipolar transistors have been made by a phosphorus implantation at 50 keV P + to a dose of 1 x 10 16 cm -2 . This was followed by high temperature processes to reduce lattice disorder, to drive-in the phosphorus atoms, and to form oxide layers. The first process step was carried out by using single- and double-step anneals in various ambients (dry N 2 , dry 0 2 and steam) while the drive-in and oxidation steps were common for all structures. Electrical measurements on emitter/base leakage current, low frequency (popcorn) noise and current gain showed that the annealing ambient had a major influence. The transistors with implanted emitters annealed in a dry N 2 ambient are comparable to commercial ones with thermally-diffused emitters. Transmission electron microscopy observations on samples annealed in steam ambients revealed dislocations extending into the sidewall of the emitter/base junction. This sidewell penetration of dislocations is the main origin of the degradation of the emitter/base junction characteristics. (author)

First-principles study of hydrogen-enhanced phosphorus diffusion in silicon

International Nuclear Information System (INIS)

The Anh, Le; Lam, Pham Tien; Manoharan, Muruganathan; Matsumura, Hideki; Otsuka, Nobuo; Hieu Chi, Dam; Tien Cuong, Nguyen; Mizuta, Hiroshi

2016-01-01

We present a first-principles study on the interstitial-mediated diffusion process of neutral phosphorus (P) atoms in a silicon crystal with the presence of mono-atomic hydrogen (H). By relaxing initial Si structures containing a P atom and an H atom, we derived four low-energy P-H-Si defect complexes whose formation energies are significantly lower than those of P-Si defect complexes. These four defect complexes are classified into two groups. In group A, an H atom is located near a Si atom, whereas in group B, an H atom is close to a P atom. We found that the H atom pairs with P or Si atom and changes the nature bonding between P and Si atoms from out-of-phase conjugation to in-phase conjugation. This fact results in the lower formation energies compare to the cases without H atom. For the migration of defect complexes, we have found that P-H-Si defect complexes can migrate with low barrier energies if an H atom sticks to either P or Si atom. Group B complexes can migrate from one lattice site to another with an H atom staying close to a P atom. Group A complexes cannot migrate from one lattice site to another without a transfer of an H atom from one Si atom to another Si atom. A change in the structure of defect complexes between groups A and B during the migration results in a transfer of an H atom between P and Si atoms. The results for diffusion of group B complexes show that the presence of mono-atomic H significantly reduces the activation energy of P diffusion in a Si crystal, which is considered as a summation of formation energy and migration barrier energy, leading to the enhancement of diffusion of P atoms at low temperatures, which has been suggested by recent experimental studies

Effects of phosphorus doping on structural and optical properties of silicon nanocrystals in a SiO2 matrix

International Nuclear Information System (INIS)

Hao, X.J.; Cho, E.-C.; Scardera, G.; Bellet-Amalric, E.; Bellet, D.; Shen, Y.S.; Huang, S.; Huang, Y.D.; Conibeer, G.; Green, M.A.

2009-01-01

Promise of Si nanocrystals highly depends on tailoring their behaviour through doping. Phosphorus-doped silicon nanocrystals embedded in a silicon dioxide matrix have been realized by a co-sputtering process. The effects of phosphorus-doping on the properties of Si nanocrystals are investigated. Phosphorus diffuses from P-P and/or P-Si to P-O upon high temperature annealing. The dominant X-ray photoelectron spectroscopy P 2p signal attributable to Si-P and/or P-P (130 eV) at 1100 o C indicates that the phosphorus may exist inside Si nanocrystals. It is found that existence of phosphorus enhances phase separation of silicon rich oxide and thereby Si crystallization. In addition, phosphorus has a considerable effect on the optical absorption and photoluminescence properties as a function of annealing temperature.

Atomically manufactured nickel-silicon quantum dots displaying robust resonant tunneling and negative differential resistance

Science.gov (United States)

Cheng, Jian-Yih; Fisher, Brandon L.; Guisinger, Nathan P.; Lilley, Carmen M.

2017-12-01

Providing a spin-free host material in the development of quantum information technology has made silicon a very interesting and desirable material for qubit design. Much of the work and experimental progress has focused on isolated phosphorous atoms. In this article, we report on the exploration of Ni-Si clusters that are atomically manufactured via self-assembly from the bottom-up and behave as isolated quantum dots. These small quantum dot structures are probed at the atomic-scale with scanning tunneling microscopy and spectroscopy, revealing robust resonance through discrete quantized energy levels within the Ni-Si clusters. The resonance energy is reproducible and the peak spacing of the quantum dot structures increases as the number of atoms in the cluster decrease. Probing these quantum dot structures on degenerately doped silicon results in the observation of negative differential resistance in both I-V and dI/dV spectra. At higher surface coverage of nickel, a well-known √19 surface modification is observed and is essentially a tightly packed array of the clusters. Spatial conductance maps reveal variations in the local density of states that suggest the clusters are influencing the electronic properties of their neighbors. All of these results are extremely encouraging towards the utilization of metal modified silicon surfaces to advance or complement existing quantum information technology.

Pulsed EPR studies of Phosphorus shallow donors in diamond and SiC

International Nuclear Information System (INIS)

Isoya, J.; Katagiri, M.; Umeda, T.; Koizumi, S.; Kanda, H.; Son, N.T.; Henry, A.; Gali, A.; Janzen, E.

2006-01-01

Phosphorus shallow donors having the symmetry lower than T d are studied by pulsed EPR. In diamond:P and 3C-SiC:P, the symmetry is lowered to D 2d and the density of the donor wave function on the phosphorus atom exhibits a predominant p-character. In 4H-SiC:P with the site symmetry of C 3v , the A 1 ground state of the phosphorus donors substituting at the quasi-cubic site of silicon shows an axial character of the distribution of the donor wave function in the vicinity of the phosphorus atom

Contribution to the study of the mechanisms of phosphorus diffusion in silicon

International Nuclear Information System (INIS)

Chambert, Gerald

1973-01-01

In this work we present a study of diffusion of phosphorus in silicon. We have been interested chiefly in profiles of concentration. In a first part, the experimental one, diffusions are carried out, and the profiles of impurities and defects are characterized. The methods of characterization are respectively: the nuclear reaction for impurities and the electronic microscopy for defects. In a second part, the theoretical one, a numerical program which can solve diffusion equations with variable coefficients, is used to simulate different theoretical models. We consider three types of theoretical models: a model with generation of vacancies; we take into account the lifetime of vacancies and watch the influence of this parameter; a model based on the experimental results of microscopy: two ways of generation of vacancies are given: the climbing of the dislocation network and the insertion of new atomic plans; a model with the diffusion of two species. The profiles obtained by the simulation are compared with the experimental ones. The last two models explain the kink which is characteristic of the phosphorus diffusion. However these models are, for the moment, qualitative. Another work will have to precise the choice between these models. (author) [fr

Electron trap annealing in neutron transmutation doped silicon

DEFF Research Database (Denmark)

Guldberg, J.

1977-01-01

Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n-Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five of these anne......Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n-Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five...

Positron probing of phosphorus-vacancy complexes in silicon irradiated with 15 MeV protons

Science.gov (United States)

Arutyunov, N.; Emtsev, V.; Krause-Rehberg, R.; Elsayed, M.; Kessler, C.; Kozlovski, V.; Oganesyan, G.

2015-06-01

Defects in phosphorus-doped silicon samples of floating-zone material, n-FZ-Si(P), produced under irradiation with 15 MeV protons at room temperature are studied by positron annihilation lifetime spectroscopy over the temperature range of ∼ 30 K - 300 K and by low- temperature Hall effect measurements. After annealing of E-centersand divacancies, we detected for the first time high concentrations of positron traps which had not been observed earlier. These defects are isochronally annealed over the temperature interval of ∼ 320 °C - 700 °C they manifest themselves as electrically neutral deep donor centersin the material of n-type. A long-lived component of the positron lifetime, τ2(I2 enthalpy and entropy of annealing of these centersare Ea ∼ 1.05(0.21) eV and ΔSm ≈ 3.1(0.6)kB, respectively. It is argued that the microstructure of the defect consists of two vacancies, VV, and one atom of phosphorus, P. The split configuration of the VPV complex is shortly discussed.

Two-laser thermal-lens determination of phosphorus in silicon

International Nuclear Information System (INIS)

Grishko, V.I.; Gol'dshtein, M.M.; Grishko, V.P.; Yudelevich, I.G.

1986-01-01

Laser thermal-lens spectrophotometry is a high-sensitivity method of measuring absorptivity, where the signal is the relative intensity change at the beam center after passage through the medium, which absorbs at the laser wavelength. The two-lens method is discussed here which employs a high-power laser to induce the lens, while the absorptivity is measured from the intensity change in the beam from a continous wave low-power test laser at a wavelength different from that for the inducing one. This paper uses two-laser thermal-lens techniques to determine phosphorus in silicon. Phosphorus is determined as the ionic association of molybdophosphoric acid with auramine

Mechanism of single atom switch on silicon

DEFF Research Database (Denmark)

Quaade, Ulrich; Stokbro, Kurt; Thirstrup, C.

1998-01-01

We demonstrate single atom switch on silicon which operates by displacement of a hydrogen atom on the silicon (100) surface at room temperature. We find two principal effects by which the switch is controlled: a pronounced maximum of the switching probability as function of sample bias...

Chromatographic determination of silicon and phosphorus as molybdic heteropoly acids with preconcentration

International Nuclear Information System (INIS)

Tikhomirova, T.I.; Krokhin, O.V.; Dubovik, D.B.; Ivanov, A.V.; Shpigun, O.A.

2002-01-01

Chromatographic behaviour of silicon and phosphorus as molybdic heteropoly acids with preconcentration as ion associations of heteropoly acid with tributylammonium bromide was studied. The technique of simultaneous analysis of silicon and phosphorus was developed. During investigation into the effect of acetonitril content in the probe on the form of chromatographic peak of molybdosilicic acid the negative influence of acetonitril on the form of peak was ascertained. This effect may be eliminated by the lowering of acetonitril content up to 50 %. It was found that under these conditions the chromatographic peak practically was absent, because of the heteropoly acid of the Mo(VI) abundance transformed in the MoO 2 2+ cation form without reaction with tributylammonium cation during concentration of heteropoly acid [ru

Neutron-activation analysis of phosphorus in aluminium-silicon alloys

International Nuclear Information System (INIS)

Rajchev, Kh.

1976-01-01

Silicon-aluminium alloy samples weighing about 50 mg are irradiated in a nuclear reactor with a neutron flow of 5x10 12 neutrons, cm -2 .s -1 . After a period of one week for decay of the short-lived isotopes, the sample is dissolved in a mixture of nitric and hydrofluoric acid. It is neutralized up to pH 2,5 and the present radioactive two- and three-valent cations are sorbed on chelating ion exchange resin Dowex A1. An ammonium phosphate standard is irradiated in parallel with the sample for qualitative determinations. The quantity of phosphorus is measured in aliquots from the sample and the standard with a liquid counter. The method proposed for separating and determining the phosphorus in silumins ensures practically the full separation of phosphorus (98,5 +- 0,5 %) and a precise determination of microquantities of the element - up to 10 -10 g. (author)

Noble gas atoms as chemical impurities in silicon

International Nuclear Information System (INIS)

Tkachev, V.D.; Mudryi, A.V.; Minaev, N.S.

1984-01-01

The behaviour of noble gas atoms implanted in silicon is studied by the luminescence method. The energy position of Moessbauer-type luminescence bands with zero-phonon lines 1.0148, 1.0120, 1.0097, 1.0048 eV and others connected with implanted atoms of neon, helium, argon, krypton, respectively, indicates the formation of deep energy levels in the forbidden gap of silicon. Implantation of the noble gas isotopes confirms their participation in formation processes of the luminescence centers in silicon. The temperature range of existence and the symmetry of defects incorporating the noble gas atoms are found. It is noted that noble gas atoms form impurity complexes with deep energy levels and their behaviour in crystals does not differ from that of main doped or residual technological impurity atoms. (author)

Three-Dimensional Integration of Black Phosphorus Photodetector with Silicon Photonics and Nanoplasmonics.

Science.gov (United States)

Chen, Che; Youngblood, Nathan; Peng, Ruoming; Yoo, Daehan; Mohr, Daniel A; Johnson, Timothy W; Oh, Sang-Hyun; Li, Mo

2017-02-08

We demonstrate the integration of a black phosphorus photodetector in a hybrid, three-dimensional architecture of silicon photonics and metallic nanoplasmonics structures. This integration approach combines the advantages of the low propagation loss of silicon waveguides, high-field confinement of a plasmonic nanogap, and the narrow bandgap of black phosphorus to achieve high responsivity for detection of telecom-band, near-infrared light. Benefiting from an ultrashort channel (∼60 nm) and near-field enhancement enabled by the nanogap structure, the photodetector shows an intrinsic responsivity as high as 10 A/W afforded by internal gain mechanisms, and a 3 dB roll-off frequency of 150 MHz. This device demonstrates a promising approach for on-chip integration of three distinctive photonic systems, which, as a generic platform, may lead to future nanophotonic applications for biosensing, nonlinear optics, and optical signal processing.

Mixing of phosphorus and antimony ions in silicon by recoil implantation

International Nuclear Information System (INIS)

Kwok, H.L.; Lam, Y.W.; Wong, S.P.; Poon, M.C.

1986-01-01

The effects of mixing phosphorus and antimony ions in silicon by recoil implantation were examined. The electrical properties after ion mixing were investigated, and the results were compared with those obtained using other techniques. Different degrees of activation were also studied, by investigating the annealing behaviour. (U.K.)

Measurement of near neighbor separations of surface atoms

International Nuclear Information System (INIS)

Cohen, P.I.

Two techniques are being developed to measure the nearest neighbor distances of atoms at the surfaces of solids. Both measures extended fine structure in the excitation probability of core level electrons which are excited by an incident electron beam. This is an important problem because the structures of most surface systems are as yet unknown, even though the location of surface atoms is the basis for any quantitative understanding of the chemistry and physics of surfaces and interfaces. These methods would allow any laboratory to make in situ determinations of surface structure in conjunction with most other laboratory probes of surfaces. Each of these two techniques has different advantages; further, the combination of the two will increase confidence in the results by reducing systematic error in the data analysis

Reaction studies of hot silicon, germanium and carbon atoms

International Nuclear Information System (INIS)

Gaspar, P.P.

1990-01-01

The goal of this project was to increase the authors understanding of the interplay between the kinetic and electronic energy of free atoms and their chemical reactivity by answering the following questions: (1) what is the chemistry of high-energy carbon silicon and germanium atoms recoiling from nuclear transformations; (2) how do the reactions of recoiling carbon, silicon and germanium atoms take place - what are the operative reaction mechanisms; (3) how does the reactivity of free carbon, silicon and germanium atoms vary with energy and electronic state, and what are the differences in the chemistry of these three isoelectronic atoms? This research program consisted of a coordinated set of experiments capable of achieving these goals by defining the structures, the kinetic and internal energy, and the charge states of the intermediates formed in the gas-phase reactions of recoiling silicon and germanium atoms with silane, germane, and unsaturated organic molecules, and of recoiling carbon atoms with aromatic molecules. The reactions of high energy silicon, germanium, and carbon atoms created by nuclear recoil were studied with substrates chosen so that their products illuminated the mechanism of the recoil reactions. Information about the energy and electronic state of the recoiling atoms at reaction was obtained from the variation in end product yields and the extent of decomposition and rearrangement of primary products (usually reactive intermediates) as a function of total pressure and the concentration of inert moderator molecules that remove kinetic energy from the recoiling atoms and can induce transitions between electronic spin states. 29 refs

Investigation of charges carrier density in phosphorus and boron doped SiNx:H layers for crystalline silicon solar cells

International Nuclear Information System (INIS)

Paviet-Salomon, B.; Gall, S.; Slaoui, A.

2013-01-01

Highlights: ► We investigate the properties of phosphorus and boron-doped silicon nitride films. ► Phosphorus-doped layers yield higher lifetimes than undoped ones. ► The fixed charges density decreases when increasing the films phosphorus content. ► Boron-doped films feature very low lifetimes. ► These doped layers are of particular interest for crystalline silicon solar cells. -- Abstract: Dielectric layers are of major importance in crystalline silicon solar cells processing, especially as anti-reflection coatings and for surface passivation purposes. In this paper we investigate the fixed charge densities (Q fix ) and the effective lifetimes (τ eff ) of phosphorus (P) and boron (B) doped silicon nitride layers deposited by plasma-enhanced chemical vapour deposition. P-doped layers exhibit a higher τ eff than standard undoped layers. In contrast, B-doped layers exhibit lower τ eff . A strong Q fix decrease is to be seen when increasing the P content within the film. Based on numerical simulations we also demonstrate that the passivation obtained with P- and B-doped layers are limited by the interface states rather than by the fixed charges

Chemical states of piled-up phosphorus and arsenic atoms at the SiO2/Si interface

International Nuclear Information System (INIS)

Yoshimura, Yusuke; Ono, Kanta; Fujioka, Hiroshi; Hayakawa, Shinjiro; Sato, Yoshiyuki; Uematsu, Masashi; Baba, Yuji; Hirose, Kazuyuki; Oshima, Masaharu

1999-01-01

We have investigated the positions of the piled-up phosphorus atoms at the SiO 2 /Si interface using the extended X-ray absorption fine structure (EXAFS) and X-ray photoelectron spectroscopy (XPS). The EXAFS and XPS data can be well explained on the assumption that the piled-up arsenic atoms exist at the tetrahedral sites. On the contrary, phosphorus atoms exist not at the tetrahedral sites but at the denser sites. The depth profile measurements of XPS have revealed that the piled-up arsenic and phosphorus atoms exist within 20A from the interface. (author)

Analysis of the behavior of gold in silicon by neutron activation method

International Nuclear Information System (INIS)

Kohara, Rikusei

1977-01-01

Diffusion behavior and distribution of a trace of gold (10 16 Atoms/cm 3 level) in silicon have been investigated by neutron activation analysis and autoradiography. The diffusion coefficient of gold in silicon was expressed by the equation D(cm 2 /s)=5.6 exp (-49kcal/RT), which was approximately 10 5 times as much as that of phosphorus or boron. The solubility of gold in silicon at 1000 0 C and 1100 0 C was (1.9+-0.2)x10 16 and (6.7+-0.7)x10 16 Atoms/cm 3 , respectively. Two factors, in addition to temperature, were found to effect the concentration of gold in silicon. One is an enhanced gold solubility effect in the presence of such impurity elements as phosphorus or arsenic. Another is the similar effect induced by lattice defects in silicon crystals. A possible distribution model of gold in digital devices was proposed from these results. (auth.)

Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

International Nuclear Information System (INIS)

Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; Macco, Bart; Kessels, W. M.; Geissbuhler, Jonas; De Wolf, Stefaan; Ballif, Christophe

2014-01-01

We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing, between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection

Molybdenum blue reaction and determination of phosphorus in waters containing arsenic, silicon, and germanium

Science.gov (United States)

Levine, H.; Rowe, J.J.; Grimaldi, F.S.

1955-01-01

Microgram amounts of phosphate are usually determined by the molybdenum blue reaction, but this reaction is not specific for phosphorus. The research established the range of conditions under which phosphate, arsenate, silicate, and germanate give the molybdenum blue reaction for differentiating these elements, and developed a method for the determination of phosphate in waters containing up to 10 p.p.m. of the oxides of germanium, arsenic(V), and silicon. With stannous chloride or 1-amino-2-naphthol-4-sulfonic acid as the reducing agent no conditions were found for distinguishing silicate from germanate and phosphate from arsenate. In the recommended procedure the phosphate is concentrated by coprecipitation on aluminum hydroxide, and coprecipitated arsenic, germanium, and silicon are volatilized by a mixture of hydrofluoric, hydrochloric, and hydrobromic acids prior to the determination of phosphate. The authors are able to report that the total phosphorus content of several samples of sea water from the Gulf of Mexico ranged from 0.018 to 0.059 mg. of phosphorus pentoxide per liter of water.

Direct atomic absorption determination of silicon in metallic niobium

International Nuclear Information System (INIS)

Blinova, Eh.S.; Guzeev, I.D.; Nedler, V.V.; Khokhrin, V.M.

1984-01-01

Consideration is being given to realization of the basic advantage of non-flame atomizer-analysis of directly solid samples-for silicon determination in niobium for the content of the first one of less than 1x10 -3 mass %. Analysis technique is described. Diagrams of the dependences of atomic silicon absorption in graphite cells of usual type as well as lined by tungsten carbide and atomic silicon absorption on the value of niobium weighed amount are presented. It is shown that Si determination in metallic niobium according to aqueous reference solutions results in understatement of results 2.4 times. The optimal conditions for Si determination in niobium are the following: 2400 deg C temperature, absence of carbon and oxygen. Different niobium specimens with the known silicon content were used as reference samples

Ab initio electronic properties of dual phosphorus monolayers in silicon

DEFF Research Database (Denmark)

Drumm, Daniel W.; Per, Manolo C.; Budi, Akin

2014-01-01

In the midst of the epitaxial circuitry revolution in silicon technology, we look ahead to the next paradigm shift: effective use of the third dimension - in particular, its combination with epitaxial technology. We perform ab initio calculations of atomically thin epitaxial bilayers in silicon...

Silicon improves flowering characteristics of sunflower and petunia at low phosphorus rates

Science.gov (United States)

Silicon (Si) is recognized as a beneficial element for plant growth. In addition, it has been shown to reduce the severity of biotic and abiotic stress. The objective of this study was to determine the effects of Si on plant growth and development at low to moderate phosphorus (P) concentrations. ...

Determinations of silicon and phosphorus in Pepperbush standard reference material by neutron activation and x-ray fluorescence methods

International Nuclear Information System (INIS)

Mizumoto, Yoshihiko; Nishio, Hirofumi; Hayashi, Takeshi; Kusakabe, Toshio; Iwata, Shiro.

1987-01-01

Silicon and phosphorus contents in Pepperbush standard reference material were determined by neutron activation and X-ray fluorescence methods. In neutron activation analysis, β-ray spectra of 32 P produced by 31 P(n,γ) 32 P reaction on Pepperbush and standard samples were measured by a low background β-ray spectrometer. In X-ray fluorescence analysis, the standard samples were prepared by mixing the Pepperbush powder with silicon dioxide and diammonium hydrogenphosphate. Characteristic X-rays from the samples were analyzed by a wavelength dispersive X-ray fluorescence spectrometer. From the β and X-ray intensities, silicon and phosphorus contents in Pepperbush were determined to be 1840 ± 80 and 1200 ± 50 μg g -1 , respectively. (author)

"Doping" pentacene with sp(2)-phosphorus atoms: towards high performance ambipolar semiconductors.

Science.gov (United States)

Long, Guankui; Yang, Xuan; Chen, Wangqiao; Zhang, Mingtao; Zhao, Yang; Chen, Yongsheng; Zhang, Qichun

2016-01-28

Recent research progress in black phosphorus sheets strongly encourages us to employ pentacene as a parent system to systematically investigate how the "doping" of sp(2)-phosphorus atoms onto the backbone of pentacene influences its optical and charge transport properties. Our theoretical investigations proved that increasing the contribution of the pz atomic orbital of the sp(2)-phosphorus to the frontier molecular orbital of phosphapentacenes could significantly decrease both hole and electron reorganization energies and dramatically red-shift the absorption of pentacene. The record smallest hole and electron reorganization energies of 69.80 and 95.74 meV for heteropentacene derivatives were obtained. These results suggest that phosphapentacenes (or phosphaacenes) could be potential promising candidates to achieve both higher and balanced mobilities in organic field effect transistors and realize a better power conversion efficiency in organic photovoltaics.

Activation analysis for measurements of silicon, phosphorus, alkali metals and other elements in high-purity metals

International Nuclear Information System (INIS)

Schmid, W.

1988-01-01

In the present thesis, methods of activation analysis were developed for the determination of the elements silicon, phosphorus, potassium, sodium, i.a. in the high-purity metals vanadium, niobium, tantalum, tungsten, molybdenum and iron. The determination of silicon is based on the activation of samples with reactor neutrons, on a subsequent radiochemical separation of the tracer radionuclide 31 Si resulting from the reaction 30 Si(n,γ), and on the measurement of β activity with the help of a liquid scintillation measuring desk. Since the tracer radionuclide 31 Si almost exclusively emits β rays which are not sufficiently nuclide-specific, silicon was selectively separated from the other sample elements by being distilled as silicon tetrafluoride. The processing of the residue following the separation of silicon permits a complementary gamma-spectroscopic determination of a whole lot of additional elements. Thus, the separation of the nuclide 182 Ta with the anion exchanger Dowex 1X8 from HF/H 2 SO 4 medium permits the determination of 22 elements in vanadium, niobium and tantalum. Phosphorus content is determined by activating the samples with rapid neutrons (cyclotrons) via the reaction 31 P(n,p) 31 Si. (orig./MM) [de

Neighboring Hetero-Atom Assistance of Sacrificial Amines to Hydrogen Evolution Using Pt-Loaded TiO2-Photocatalyst

Directory of Open Access Journals (Sweden)

Masahide Yasuda

2014-05-01

Full Text Available Photocatalytic H2 evolution was examined using Pt-loaded TiO2-photocatalyst in the presence of amines as sacrificial agents. In the case of amines with all of the carbon attached to the hetero-atom such as 2-aminoethanol, 1,2-diamonoethane, 2-amino-1,3-propanediol, and 3-amino-1,2-propanediol, they were completely decomposed into CO2 and water to quantitatively evolve H2. On the other hand, the amines with both hetero-atoms and one methyl group at the β-positions (neighboring carbons of amino group such as 2-amino-1-propanol and 1,2-diaminopropane were partially decomposed. Also, the photocatalytic H2 evolution using amines without the hetero-atoms at the β-positions such as ethylamine, propylamine, 1-butylamine, 1,3-diaminopropane, 2-propylamine, and 2-butylamine was inefficient. Thus, it was found that the neighboring hetero-atom strongly assisted the degradation of sacrificial amines. Moreover, rate constants for H2 evolution were compared among amines. In conclusion, the neighboring hetero-atom did not affect the rate constants but enhanced the yield of hydrogen evolution.

Sodium-Induced Reordering of Atomic Stacks in Black Phosphorus

KAUST Repository

Cheng, Yingchun

2017-01-12

While theoretical simulations predict contradictory results about how the intercalation of foreign metal atoms affects the order of atomic layers in black phosphorus (BP), no direct experimental visualization work has yet clarified this ambiguity. By in situ electrochemical sodiation of BP inside a high-resolution transmission electron microscope and first-principles calculations, we found that sodium intercalation induces a relative glide of/ ⟨010⟩ {001}, resulting in reordering of atomic stacks from AB to AC in BP. The observed local amorphization in our experiments is triggered by lattice constraints. We predict that intercalation of sodium or other metal atoms introduces n-type carriers in BP. This potentially opens a new field for two-dimensional electronics based on BP.

Sodium-Induced Reordering of Atomic Stacks in Black Phosphorus

KAUST Repository

Cheng, Yingchun; Zhu, Yihan; Han, Yu; Liu, Zhongyuan; Yang, Bingchao; Nie, Anmin; Huang, Wei; Shahbazian-Yassar, Reza; Mashayek, Farzad

2017-01-01

While theoretical simulations predict contradictory results about how the intercalation of foreign metal atoms affects the order of atomic layers in black phosphorus (BP), no direct experimental visualization work has yet clarified this ambiguity. By in situ electrochemical sodiation of BP inside a high-resolution transmission electron microscope and first-principles calculations, we found that sodium intercalation induces a relative glide of/ ⟨010⟩ {001}, resulting in reordering of atomic stacks from AB to AC in BP. The observed local amorphization in our experiments is triggered by lattice constraints. We predict that intercalation of sodium or other metal atoms introduces n-type carriers in BP. This potentially opens a new field for two-dimensional electronics based on BP.

Comparison on mechanical properties of heavily phosphorus- and arsenic-doped Czochralski silicon wafers

Science.gov (United States)

Yuan, Kang; Sun, Yuxin; Lu, Yunhao; Liang, Xingbo; Tian, Daxi; Ma, Xiangyang; Yang, Deren

2018-04-01

Heavily phosphorus (P)- and arsenic (As)-doped Czochralski silicon (CZ-Si) wafers generally act as the substrates for the epitaxial silicon wafers used to fabricate power and communication devices. The mechanical properties of such two kinds of n-type heavily doped CZ silicon wafers are vital to ensure the quality of epitaxial silicon wafers and the manufacturing yields of devices. In this work, the mechanical properties including the hardness, Young's modulus, indentation fracture toughness and the resistance to dislocation motion have been comparatively investigated for heavily P- and As-doped CZ-Si wafers. It is found that heavily P-doped CZ-Si possesses somewhat higher hardness, lower Young's modulus, larger indentation fracture toughness and stronger resistance to dislocation motion than heavily As-doped CZ-Si. The mechanisms underlying this finding have been tentatively elucidated by considering the differences in the doping effects of P and As in silicon.

Doping profile measurement on textured silicon surface

Science.gov (United States)

Essa, Zahi; Taleb, Nadjib; Sermage, Bernard; Broussillou, Cédric; Bazer-Bachi, Barbara; Quillec, Maurice

2018-04-01

In crystalline silicon solar cells, the front surface is textured in order to lower the reflection of the incident light and increase the efficiency of the cell. This texturing whose dimensions are a few micrometers wide and high, often makes it difficult to determine the doping profile measurement. We have measured by secondary ion mass spectrometry (SIMS) and electrochemical capacitance voltage profiling the doping profile of implanted phosphorus in alkaline textured and in polished monocrystalline silicon wafers. The paper shows that SIMS gives accurate results provided the primary ion impact angle is small enough. Moreover, the comparison between these two techniques gives an estimation of the concentration of electrically inactive phosphorus atoms.

Carbon-hydrogen defects with a neighboring oxygen atom in n-type Si

Science.gov (United States)

Gwozdz, K.; Stübner, R.; Kolkovsky, Vl.; Weber, J.

2017-07-01

We report on the electrical activation of neutral carbon-oxygen complexes in Si by wet-chemical etching at room temperature. Two deep levels, E65 and E75, are observed by deep level transient spectroscopy in n-type Czochralski Si. The activation enthalpies of E65 and E75 are obtained as EC-0.11 eV (E65) and EC-0.13 eV (E75). The electric field dependence of their emission rates relates both levels to single acceptor states. From the analysis of the depth profiles, we conclude that the levels belong to two different defects, which contain only one hydrogen atom. A configuration is proposed, where the CH1BC defect, with hydrogen in the bond-centered position between neighboring C and Si atoms, is disturbed by interstitial oxygen in the second nearest neighbor position to substitutional carbon. The significant reduction of the CH1BC concentration in samples with high oxygen concentrations limits the use of this defect for the determination of low concentrations of substitutional carbon in Si samples.

Imaging of buried phosphorus nanostructures in silicon using scanning tunneling microscopy

Energy Technology Data Exchange (ETDEWEB)

Oberbeck, Lars [Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); TOTAL Marketing Services, New Energies, La Défense 10, 92069 Paris La Défense Cedex (France); Reusch, Thilo C. G.; Hallam, Toby; Simmons, Michelle Y., E-mail: n.curson@ucl.ac.uk, E-mail: michelle.simmons@unsw.edu.au [Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Schofield, Steven R. [Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); London Centre for Nanotechnology, UCL, London WC1H 0AH (United Kingdom); Department of Physics and Astronomy, UCL, London WC1E 6BT (United Kingdom); Curson, Neil J., E-mail: n.curson@ucl.ac.uk, E-mail: michelle.simmons@unsw.edu.au [Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); London Centre for Nanotechnology, UCL, London WC1H 0AH (United Kingdom); Department of Electronic and Electrical Engineering, UCL, London WC1E 7JE (United Kingdom)

2014-06-23

We demonstrate the locating and imaging of single phosphorus atoms and phosphorus dopant nanostructures, buried beneath the Si(001) surface using scanning tunneling microscopy. The buried dopant nanostructures have been fabricated in a bottom-up approach using scanning tunneling microscope lithography on Si(001). We find that current imaging tunneling spectroscopy is suited to locate and image buried nanostructures at room temperature and with residual surface roughness present. From these studies, we can place an upper limit on the lateral diffusion during encapsulation with low-temperature Si molecular beam epitaxy.

Imaging of buried phosphorus nanostructures in silicon using scanning tunneling microscopy

International Nuclear Information System (INIS)

Oberbeck, Lars; Reusch, Thilo C. G.; Hallam, Toby; Simmons, Michelle Y.; Schofield, Steven R.; Curson, Neil J.

2014-01-01

We demonstrate the locating and imaging of single phosphorus atoms and phosphorus dopant nanostructures, buried beneath the Si(001) surface using scanning tunneling microscopy. The buried dopant nanostructures have been fabricated in a bottom-up approach using scanning tunneling microscope lithography on Si(001). We find that current imaging tunneling spectroscopy is suited to locate and image buried nanostructures at room temperature and with residual surface roughness present. From these studies, we can place an upper limit on the lateral diffusion during encapsulation with low-temperature Si molecular beam epitaxy.

Studying nearest neighbor correlations by atom probe tomography (APT) in metallic glasses as exemplified for Fe40Ni40B20 glassy ribbons

KAUST Repository

Shariq, Ahmed

2012-01-01

A next nearest neighbor evaluation procedure of atom probe tomography data provides distributions of the distances between atoms. The width of these distributions for metallic glasses studied so far is a few Angstrom reflecting the spatial resolution of the analytical technique. However, fitting Gaussian distributions to the distribution of atomic distances yields average distances with statistical uncertainties of 2 to 3 hundredth of an Angstrom. Fe 40Ni40B20 metallic glass ribbons are characterized this way in the as quenched state and for a state heat treated at 350 °C for 1 h revealing a change in the structure on the sub-nanometer scale. By applying the statistical tool of the χ2 test a slight deviation from a random distribution of B-atoms in the as quenched sample is perceived, whereas a pronounced elemental inhomogeneity of boron is detected for the annealed state. In addition, the distance distribution of the first fifteen atomic neighbors is determined by using this algorithm for both annealed and as quenched states. The next neighbor evaluation algorithm evinces a steric periodicity of the atoms when the next neighbor distances are normalized by the first next neighbor distance. A comparison of the nearest neighbor atomic distribution for as quenched and annealed state shows accumulation of Ni and B. Moreover, it also reveals the tendency of Fe and B to move slightly away from each other, an incipient step to Ni rich boride formation. © 2011 Elsevier B.V.

Investigation of chemical modifiers for phosphorus in a graphite furnace using high-resolution continuum source atomic absorption spectrometry

International Nuclear Information System (INIS)

Lepri, Fabio G.; Dessuy, Morgana B.; Vale, Maria Goreti R.; Borges, Daniel L.G.; Welz, Bernhard; Heitmann, Uwe

2006-01-01

Phosphorus is not one of the elements that are typically determined by atomic absorption spectrometry, but this technique nevertheless offers several advantages that make it attractive, such as the relatively great freedom from interferences. As the main resonance lines for phosphorus are in the vacuum-ultraviolet, inaccessible by conventional atomic absorption spectrometry equipment, L'vov and Khartsyzov proposed to use the non-resonance doublet at 213.5 / 213.6 nm. Later it turned out that with conventional equipment it is necessary to use a chemical modifier in order to get reasonable sensitivity, and lanthanum was the first one suggested for that purpose. In the following years more than 30 modifiers have been proposed for the determination of this element, and there is no consensus about the best one. In this work high-resolution continuum source atomic absorption spectrometry has been used to investigate the determination of phosphorus without a modifier and with the addition of selected modifiers of very different nature, including the originally recommended lanthanum modifier, several palladium-based modifiers and sodium fluoride. As high-resolution continuum source atomic absorption spectrometry is revealing the spectral environment of the analytical line at high resolution, it became obvious that without the addition of a modifier essentially no atomic phosphorus is formed, even at 2700 deg. C . The absorption measured with line source atomic absorption spectrometry in this case is due to the PO molecule, the spectrum of which is overlapping with the atomic line. Palladium, with or without the addition of calcium or ascorbic acid, was found to be the only modifier to produce almost exclusively atomic phosphorus. Lanthanum and particularly sodium fluoride produced a mixture of P and PO, depending on the atomization temperature. This fact can explain at least some of the discrepancies found in the literature and some of the phenomena observed in the

Applications of phosphorus/silicon standards in quantitative autoradiography

International Nuclear Information System (INIS)

Treutler, H.Ch.; Freyer, K.

1983-01-01

Quantitative autoradiography requires a careful selection of suitable standard preparations. After several basic comments related to the problems of standardization in autoradiography an example is given of the autoradiographic study of semiconductor materials and it is used for describing the system of standardization using silicon discs with diffused phosphorus. These standardized samples are processed in the same manner as the evaluated samples, i.e., from activation to exposure to sensitive material whereby optimal comparability is obtained. All failures of the processing cycle caused by the fluctuation of the neutron flux in the reactor, deviations at the time of activation, afterglow, etc. are eliminated by this standardization procedure. Experience is presented obtained with the application of this procedure. (author)

Deep level transient spectroscopy studies of charge traps introduced into silicon by channeling ion implantation of phosphorus

International Nuclear Information System (INIS)

McCallum, J.C.; Lay, M.; Deenapanray, P.N.K.; Jagadish, C.

2002-01-01

Full text: The operating conditions of a silicon-based quantum computer are expected to place stringent requirements on the quality of the material and the processes used to make it. In the Special Research Centre for Quantum Computer Technology, ion implantation is one of the principle processing techniques under investigation for forming an ordered array of phosphorus atoms. This technique introduces defect centres in silicon which act as charge traps. Charge traps are expected to be detrimental to operation of the device. These defect centres, their dependence on ion implantation and thermal annealing conditions are being quantified using Deep Level Transient Spectroscopy (DLTS). Since the aspect ratio of the masks required for the top-down fabrication process restrict the incident ions to a range of angles in which they may undergo channeling implantation in the silicon substrate, we have examined the effect of channeling implantation on the nature and quantity of the charge traps produced. This is the first time that DLTS studies have been performed for channeling implantation of a dopant species in silicon. DLTS is well-suited to the dose regime of ∼10 11 P/cm 3 required for the quantum computer, however, a standard DLTS measurement is unable to probe the shallow depth range of ∼ 20 nm required for the P atoms (∼ 10-15 keV implantation energy). Our aim has therefore been to perform P implants in the appropriate dose regime but using higher implantation energies, ∼ 75-450 keV, where DLTS can directly identify and profile the charge traps induced by the implantation step and monitor their annealing characteristics during subsequent processing. To map the behaviour observed in this energy regime onto the low energy range required for the quantum computer we are comparing the DLTS results to damage profiles predicted by the Monte Carlo code Crystal Trim which is used in the semiconductor industry to simulate ion implantation processes in crystalline

Structure and physical properties of silicon clusters and of vacancy clusters in bulk silicon

International Nuclear Information System (INIS)

Sieck, A.

2000-01-01

In this thesis the growth-pattern of free silicon clusters and vacancy clusters in bulk silicon is investigated. The aim is to describe and to better understand the cluster to bulk transition. Silicon structures in between clusters and solids feature new interesting physical properties. The structure and physical properties of silicon clusters can be revealed by a combination of theory and experiment, only. Low-energy clusters are determined with different optimization techniques and a density-functional based tight-binding method. Additionally, infrared and Raman spectra, and polarizabilities calculated within self-consistent field density-functional theory are provided for the smaller clusters. For clusters with 25 to 35 atoms an analysis of the shape of the clusters and the related mobilities in a buffer gas is given. Finally, the clusters observed in low-temperature experiments are identified via the best match between calculated properties and experimental data. Silicon clusters with 10 to 15 atoms have a tricapped trigonal prism as a common subunit. Clusters with up to about 25 atoms follow a prolate growth-path. In the range from 24 to 30 atoms the geometry of the clusters undergoes a transition towards compact spherical structures. Low-energy clusters with up to 240 atoms feature a bonding pattern strikingly different from the tetrahedral bonding in the solid. It follows that structures with dimensions of several Angstroem have electrical and optical properties different from the solid. The calculated stabilities and positron-lifetimes of vacancy clusters in bulk silicon indicate the positron-lifetimes of about 435 ps detected in irradiated silicon to be related to clusters of 9 or 10 vacancies. The vacancies in these clusters form neighboring hexa-rings and, therefore, minimize the number of dangling bonds. (orig.)

Atomic-layer deposition of silicon nitride

CERN Document Server

Yokoyama, S; Ooba, K

1999-01-01

Atomic-layer deposition (ALD) of silicon nitride has been investigated by means of plasma ALD in which a NH sub 3 plasma is used, catalytic ALD in which NH sub 3 is dissociated by thermal catalytic reaction on a W filament, and temperature-controlled ALD in which only a thermal reaction on the substrate is employed. The NH sub 3 and the silicon source gases (SiH sub 2 Cl sub 2 or SiCl sub 4) were alternately supplied. For all these methods, the film thickness per cycle was saturated at a certain value for a wide range of deposition conditions. In the catalytic ALD, the selective deposition of silicon nitride on hydrogen-terminated Si was achieved, but, it was limited to only a thin (2SiO (evaporative).

Isolating and moving single atoms using silicon nanocrystals

Science.gov (United States)

Carroll, Malcolm S.

2010-09-07

A method is disclosed for isolating single atoms of an atomic species of interest by locating the atoms within silicon nanocrystals. This can be done by implanting, on the average, a single atom of the atomic species of interest into each nanocrystal, and then measuring an electrical charge distribution on the nanocrystals with scanning capacitance microscopy (SCM) or electrostatic force microscopy (EFM) to identify and select those nanocrystals having exactly one atom of the atomic species of interest therein. The nanocrystals with the single atom of the atomic species of interest therein can be sorted and moved using an atomic force microscope (AFM) tip. The method is useful for forming nanoscale electronic and optical devices including quantum computers and single-photon light sources.

Trihydroborates and dihydroboranes bearing a pentacoordinated phosphorus atom: double ring expansion to balance the coordination states

Energy Technology Data Exchange (ETDEWEB)

Kano, Naokazu; O' Brien, Nathan J. [Department of Chemistry, Graduate School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-0033 (Japan); Uematsu, Ryohei; Ramozzi, Romain; Morokuma, Keiji [Fukui Institute for Fundamental Chemistry, Kyoto University, Takano-Nishihiraki-cho 34-4, Sakyou-ku, Kyoto, 606-8103 (Japan)

2017-05-15

The first trihydroborate bearing a pentacoordinated phosphorus atom was synthesized as a new P-B bonded compound. Hydride abstraction of the trihydroborate gave an intermediary dihydroborane, which showed hydroboration reactivity and was trapped with pyridine whilst maintaining the P-B bond. The dihydroborane underwent a rearrangement, which involved a double ring expansion to compensate for the unbalanced coordination states of the phosphorus and boron atoms, to give a new fused bicyclic phosphine-boronate. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

Trihydroborates and dihydroboranes bearing a pentacoordinated phosphorus atom: double ring expansion to balance the coordination states

International Nuclear Information System (INIS)

Kano, Naokazu; O'Brien, Nathan J.; Uematsu, Ryohei; Ramozzi, Romain; Morokuma, Keiji

2017-01-01

The first trihydroborate bearing a pentacoordinated phosphorus atom was synthesized as a new P-B bonded compound. Hydride abstraction of the trihydroborate gave an intermediary dihydroborane, which showed hydroboration reactivity and was trapped with pyridine whilst maintaining the P-B bond. The dihydroborane underwent a rearrangement, which involved a double ring expansion to compensate for the unbalanced coordination states of the phosphorus and boron atoms, to give a new fused bicyclic phosphine-boronate. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

Formation of nanoclusters of gadolinium atoms in silicon

International Nuclear Information System (INIS)

Iliev, Kh.M.; Saparniyazova, Z.M.; Ismajlov, K.A.; Madzhitov, M.Kh.

2011-01-01

A technology of stage wise low temperature diffusion of gadolinium into silicon that makes it possible to form nanoclusters of impurity atoms with a significant magnetic moment distributed throughout the volume of the material has been developed. It is shown that, unlike the samples obtained by high temperature diffusion doping, the samples prepared by the new technology do not have surface erosion, and alloys and silicides are not formed in the near surface region. Nanoclusters of impurity atoms of gadolinium in the volume of the crystal lattice of the silicon are studied using an MIK-5 infrared microscope. It is found that, in the stage wise low temperature diffusion, the temperature and time of the diffusion have an effect not only on the depth of penetration of the impurities but also on the sizes of the resulting clusters; these factors can also prevent the formation of clusters. The study of the effect of low temperature treatments on the size and distribution of clusters shows that, upon annealing in the temperature range of 500-700 degrees Celsius, the ordering of the clusters of gadolinium impurity atoms is observed. A further increase in the annealing temperature leads to the destruction of gadolinium clusters in the silicon bulk. (authors)

Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots

Directory of Open Access Journals (Sweden)

T. Ferrus

2012-06-01

Full Text Available We have observed a negative differential conductance with singular gate and source-drain bias dependences in a phosphorus-doped silicon quantum dot. Its origin is discussed within the framework of weak localization. By measuring the current-voltage characteristics at different temperatures as well as simulating the tunneling rates dependences on energy, we demonstrate that the presence of shallow energy defects together with an enhancement of localization satisfactory explain our observations. Effects observed in magnetic fields are also discussed.

Dephosphorization of Levitated Silicon-Iron Droplets for Production of Solar-Grade Silicon

Science.gov (United States)

Le, Katherine; Yang, Yindong; Barati, Mansoor; McLean, Alexander

2018-05-01

The treatment of relatively inexpensive silicon-iron alloys is a potential refining route in order to generate solar-grade silicon. Phosphorus is one of the more difficult impurity elements to remove by conventional processing. In this study, electromagnetic levitation was used to investigate phosphorus behavior in silicon-iron alloy droplets exposed to H2-Ar gas mixtures under various experimental conditions including, refining time, temperature (1723 K to 1993 K), gas flow rate, iron content, and initial phosphorus concentration in the alloy. Thermodynamic modeling of the dephosphorization reaction permitted prediction of the various gaseous products and indicated that diatomic phosphorus is the dominant species formed.

Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation

Science.gov (United States)

Inglese, Alessandro; Laine, Hannu S.; Vähänissi, Ville; Savin, Hele

2018-01-01

The presence of copper (Cu) contamination is known to cause relevant light-induced degradation (Cu-LID) effects in p-type silicon. Due to its high diffusivity, Cu is generally regarded as a relatively benign impurity, which can be readily relocated during device fabrication from the wafer bulk, i.e. the region affected by Cu-LID, to the surface phosphorus-doped emitter. This contribution examines in detail the impact of gettering by industrially relevant phosphorus layers on the strength of Cu-LID effects. We find that phosphorus gettering does not always prevent the occurrence of Cu-LID. Specifically, air-cooling after an isothermal anneal at 800°C results in only weak impurity segregation to the phosphorus-doped layer, which turns out to be insufficient for effectively mitigating Cu-LID effects. Furthermore, we show that the gettering efficiency can be enhanced through the addition of a slow cooling ramp (-4°C/min) between 800°C and 600°C, resulting in the nearly complete disappearance of Cu-LID effects.

Trichlorosilane and silicon tetrachloride sample preparation for determination of boron, phosphorus and arsenic microelements

International Nuclear Information System (INIS)

Stolyarova, I.V.; Orlova, V.A.

1995-01-01

The conditions of sample preparation ensuring virtually complete elimination of boron, phosphorus, and arsenic losses are elaborated. Analysis procedures are proposed that involve hydrolysis in an autoclave for exothermic reactions and/or in an open reaction reservoir on frozen twice-distilled water with complexing-agent and oxidant solutionsd applied layer-by-layer, with the possible subsequent atomic-emission, extraction-spectrophotometric, or extraction-colorimetric determination of boron, phosphorus, and arsenic. The procedures improve the accuracy and precision of the results and reduce the duration of chemical preparation due to the quantitative preconcentration of boron, phosphorus, and arsenic; they almost completely eliminate the possibility of the formation of volatile fluoride forms of these elements. 11 refs.; 3 tabs

Impact of implanted phosphorus on the diffusivity of boron and its applicability to silicon solar cells

International Nuclear Information System (INIS)

Schrof, Julian; Müller, Ralph; Benick, Jan; Hermle, Martin; Reedy, Robert C.

2015-01-01

Boron diffusivity reduction in extrinsically doped silicon was investigated in the context of a process combination consisting of BBr 3 furnace diffusion and preceding Phosphorus ion implantation. The implantation of Phosphorus leads to a substantial blocking of Boron during the subsequent Boron diffusion. First, the influences of ion implantation induced point defects as well as the initial P doping on B diffusivity were studied independently. Here, it was found that not the defects created during ion implantation but the P doping itself results in the observed B diffusion retardation. The influence of the initial P concentration was investigated in more detail by varying the P implantation dose. A secondary ion mass spectrometry (SIMS) analysis of the BSG layer after the B diffusion revealed that the B diffusion retardation is not due to potential P content in the BSG layer but rather caused by the n-type doping of the crystalline silicon itself. Based on the observations the B diffusion retardation was classified into three groups: (i) no reduction of B diffusivity, (ii) reduced B diffusivity, and (iii) blocking of the B diffusion. The retardation of B diffusion can well be explained by the phosphorus doping level resulting in a Fermi level shift and pairing of B and P ions, both reducing the B diffusivity. Besides these main influences, there are probably additional transient phenomena responsible for the blocking of boron. Those might be an interstitial transport mechanism caused by P diffusion that reduces interstitial concentration at the surface or the silicon/BSG interface shift due to oxidation during the BBr 3 diffusion process. Lifetime measurements revealed that the residual (non-blocked) B leads to an increased dark saturation current density in the P doped region. Nevertheless, electrical quality is on a high level and was further increased by reducing the B dose as well as by removing the first few nanometers of the silicon surface after the BBr 3

Capture of negative muons in magnesium oxides and crystalline modifications of phosphorus

International Nuclear Information System (INIS)

Zinov, V.G.; Kachalkin, A.K.; Nikityuk, L.N.; Pokrovskij, V.N.; Rybakov, V.N.; Yutlandov, I.A.

1977-01-01

The paper is aimed at comparing the structure of mesic K X-ray patterns of phosphorus in its crystalline modifications, comparing the structure of mesic X-ray patterns of magnesium and oxygen in compounds of MgO, MgO 2 , H 2 O and metallic magnesium, as well as comparison of propabilities of μ - atomic capture in magnesium oxides. By analyzing the mesic K X-ray patterns of red and white phosphorus it is concluded that the phosphorus crystalline modification produces the effect on the line structure, the higher series number being somewhat larger for the allotrope of phosphorus with polymeric structure. A comparison is made of the mesic X-ray series of the magnesium in oxide and metal, of the oxygen in oxide and water with the analogous data for aluminium and silicon. The data confirm the supposition that chemical bond (valence electrons) plays a substantial role in meson capture

An efficient strategy for designing ambipolar organic semiconductor material: Introducing dehydrogenated phosphorus atoms into pentacene core

Science.gov (United States)

Tang, Xiao-Dan

2017-09-01

The charge transport properties of phosphapentacene (P-PEN) derivatives were systematically explored by theoretical calculation. The dehydrogenated P-PENs have reasonable frontier molecular orbital energy levels to facilitate both electron and hole injection. The reduced reorganization energies of dehydrogenated P-PENs could be intimately connected to the bonding nature of phosphorus atoms. From the idea of homology modeling, the crystal structure of TIPSE-4P-2p is constructed and fully optimized. Fascinatingly, TIPSE-4P-2p shows the intrinsic property of ambipolar transport in both hopping and band models. Thus, introducing dehydrogenated phosphorus atoms into pentacene core could be an efficient strategy for designing ambipolar material.

Preparation and properties of novel epoxy/graphene oxide nanosheets (GON) composites functionalized with flame retardant containing phosphorus and silicon

International Nuclear Information System (INIS)

Li, Kuo-Yi; Kuan, Chen-Feng; Kuan, Hsu-Chiang; Chen, Chia-Hsun; Shen, Ming-Yuan; Yang, Jia-Ming; Chiang, Chin-Lung

2014-01-01

2-(Diphenylphosphino)ethyltriethoxy silane (DPPES) was grafted onto the surface of graphene oxide nanosheets (GON) via a condensation reaction. X-ray photoelectron spectroscopy, X-ray diffractometry, Fourier transform infrared spectroscopy and Raman spectroscopy verify that DPPES did not only covalently bond to GON as a functionalization moiety, but partly restored its conjugated structure as a reducing agent. DPPES on graphene sheets oxide was observed by transmission electron microscopy, and contributed to the favorable dispersion of DPPES-GON in nonpolar toluene. Additionally, the flame retardancy and thermal stability of epoxy/DPPES-GON nanocomposites that contain various weight fractions of DPPES-GON were studied using the limiting oxygen index test, UL-94 test and by thermogravimetric analysis in nitrogen. The composites containing 10 wt% DPPES-GON can pass V-0 rating in UL-94 test. Adding 10 wt% DPPES-GON in epoxy greatly increased the char yield and LOI by 42% and 80%, respectively. Epoxy/DPPES-GON nanocomposites with phosphorus, silicon and graphene layer structures were found to exhibit much greater flame retardancy than neat epoxy. The synergistic effects among silicon, phosphorus and GON can improve the flame retardancy of epoxy resin. - Highlights: • Flame retardant was grafted on the surface of graphene oxide nanosheets (GON) by the condensation reaction. • The synergistic effect between silicon, phosphorus and GON improved the flame retardance of epoxy resin. • Epoxy composites have excellent flame retardance at low additive concentrations

Silicon quantum processor with robust long-distance qubit couplings

Energy Technology Data Exchange (ETDEWEB)

Tosi, Guilherme; Mohiyaddin, Fahd A.; Schmitt, Vivien; Tenberg, Stefanie; Rahman, Rajib; Klimeck, Gerhard; Morello, Andrea

2017-09-06

Practical quantum computers require a large network of highly coherent qubits, interconnected in a design robust against errors. Donor spins in silicon provide state-of-the-art coherence and quantum gate fidelities, in a platform adapted from industrial semiconductor processing. Here we present a scalable design for a silicon quantum processor that does not require precise donor placement and leaves ample space for the routing of interconnects and readout devices. We introduce the flip-flop qubit, a combination of the electron-nuclear spin states of a phosphorus donor that can be controlled by microwave electric fields. Two-qubit gates exploit a second-order electric dipole-dipole interaction, allowing selective coupling beyond the nearest-neighbor, at separations of hundreds of nanometers, while microwave resonators can extend the entanglement to macroscopic distances. We predict gate fidelities within fault-tolerance thresholds using realistic noise models. This design provides a realizable blueprint for scalable spin-based quantum computers in silicon.

Investigations of different doping concentration of phosphorus and boron into silicon substrate on the variable temperature Raman characteristics

Science.gov (United States)

Li, Xiaoli; Ding, Kai; Liu, Jian; Gao, Junxuan; Zhang, Weifeng

2018-01-01

Different doped silicon substrates have different device applications and have been used to fabricate solar panels and large scale integrated circuits. The thermal transport in silicon substrates are dominated by lattice vibrations, doping type, and doping concentration. In this paper, a variable-temperature Raman spectroscopic system is applied to record the frequency and linewidth changes of the silicon peak at 520 cm-1 in five chips of silicon substrate with different doping concentration of phosphorus and boron at the 83K to 1473K temperature range. The doping has better heat sensitive to temperature on the frequency shift over the low temperature range from 83K to 300K but on FWHM in high temperature range from 300K to 1473K. The results will be helpful for fundamental study and practical applications of silicon substrates.

Phosphorus Diffusion Gettering Efficacy in Upgraded Metallurgical-Grade Solar Silicon

Science.gov (United States)

Jiménez, A.; del Cañizo, C.; Cid, C.; Peral, A.

2018-05-01

In the context of the continuous price reduction in photovoltaics (PV) in recent years, Si feedstock continues to be a relevant component in the cost breakdown of a PV module, highlighting the need for low-cost, low-capital expenditure (CAPEX) silicon technologies to further reduce this cost component. Upgraded metallurgical-grade silicon (UMG Si) has recently received much attention, improving its quality and even attaining, in some cases, solar cell efficiencies similar to those of conventional material. However, some technical challenges still have to be addressed when processing this material to compensate efficiently for the high content of impurities and contaminants. Adaptation of a conventional solar cell process to monocrystalline UMG Si wafers has been studied in this work. In particular, a tailored phosphorus diffusion gettering step followed by a low-temperature anneal at 700°C was implemented, resulting in enhanced bulk lifetime and emitter recombination properties. In spite of the need for further research and material optimization, UMG Si wafers were successfully processed, achieving efficiencies in the range of 15% for a standard laboratory solar cell process with aluminum back surface field.

Preparation of phosphorus targets using the compound phosphorus nitride

International Nuclear Information System (INIS)

Maier-Komor, P.

1987-01-01

Commercially available phosphorus nitride (P 3 N 5 ) shows a high oxygen content. Nevertheless, this material is attractive for use as phosphorus targets in experiments where red phosphorus would disappear due to its high vapor pressure and where a metal partner in the phosphide must be excluded due to its high atomic number. Methods are described to produce phosphorus nitride targets by vacuum evaporation condensation. (orig.)

LiBSi2: a tetrahedral semiconductor framework from boron and silicon atoms bearing lithium atoms in the channels.

Science.gov (United States)

Zeilinger, Michael; van Wüllen, Leo; Benson, Daryn; Kranak, Verina F; Konar, Sumit; Fässler, Thomas F; Häussermann, Ulrich

2013-06-03

Silicon swallows up boron: The novel open tetrahedral framework structure (OTF) of the Zintl phase LiBSi2 was made by applying high pressure to a mixture of LiB and elemental silicon. The compound represents a new topology in the B-Si net (called tum), which hosts Li atoms in the channels (see picture). LiBSi2 is the first example where B and Si atoms form an ordered common framework structure with B engaged exclusively in heteronuclear B-Si contacts.

Protective silicon coating for nanodiamonds using atomic layer deposition

International Nuclear Information System (INIS)

Lu, J.; Wang, Y.H.; Zang, J.B.; Li, Y.N.

2007-01-01

Ultrathin silicon coating was deposited on nanodiamonds using atomic layer deposition (ALD) from gaseous monosilane (SiH 4 ). The coating was performed by sequential reaction of SiH 4 saturated adsorption and in situ decomposition. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were utilized to investigate the structural and morphological properties of the coating. Thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC) were used to compare the thermal stability of nanodiamonds before and after silicon coating. The results confirmed that the deposited cubic phase silicon coating was even and continuous. The protective silicon coating could effectively improve the oxidation resistance of nanodiamonds in air flow, which facilitates the applications of nanodiamonds that are commonly hampered by their poor thermal stability

Protective silicon coating for nanodiamonds using atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Lu, J. [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004 (China); College of Materials Science and Engineering, Yanshan University, Qinhuangdao, Hebei 066004 (China); Wang, Y.H. [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004 (China); College of Materials Science and Engineering, Yanshan University, Qinhuangdao, Hebei 066004 (China); Zang, J.B. [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004 (China) and College of Materials Science and Engineering, Yanshan University, Qinhuangdao, Hebei 066004 (China)]. E-mail: diamondzjb@163.com; Li, Y.N. [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004 (China); College of Materials Science and Engineering, Yanshan University, Qinhuangdao, Hebei 066004 (China)

2007-01-30

Ultrathin silicon coating was deposited on nanodiamonds using atomic layer deposition (ALD) from gaseous monosilane (SiH{sub 4}). The coating was performed by sequential reaction of SiH{sub 4} saturated adsorption and in situ decomposition. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were utilized to investigate the structural and morphological properties of the coating. Thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC) were used to compare the thermal stability of nanodiamonds before and after silicon coating. The results confirmed that the deposited cubic phase silicon coating was even and continuous. The protective silicon coating could effectively improve the oxidation resistance of nanodiamonds in air flow, which facilitates the applications of nanodiamonds that are commonly hampered by their poor thermal stability.

Analysis of borophosphosilicate glass layers on silicon wafers by X-ray emission from photon and electron excitation

International Nuclear Information System (INIS)

Elgersma, O.; Borstrok, J.J.M.

1989-01-01

Phosphorus and oxygen concentrations in the homogeneous layer of borosilicate glass (BPSG) deposited on Si-integrated circuits are determined by X-ray fluorescence from photon excitation. The X-ray emission from electron excitation in an open X-ray tube instrument yields a sufficiently precise determination of the boron content. The thickness of the layer can be derived from silicon Kα-fluorescence. A calibration model is proposed for photon as well as for electron excitation. The experimentally determined parameters in this model well agree with those derived from fundamental parameters for X-ray absorption and emission. The chemical surrounding of silicon affects strongly the peak profile of the silicon Kβ-emission. This enables to distinguish emission from the silicon atoms in the wafer and from the silicon atoms in the silicon oxide complexes of the BPSG-layer. (author)

Primary processes and ionic reactions in the chemistry of recoiling silicon atoms

International Nuclear Information System (INIS)

Gaspar, P.P.; Garmestani, K.; Boo, B.H.; Stewart, G.W.

1993-01-01

Hot atom chemistry has permitted the elucidation of the chemistry of free atoms, and these include the polyvalent atoms of refractory group 14 elements, that is, carbon, silicon and germanium. Since no more than two bonds are formed normally in a single reactive collision of free atoms, the study on the chemistry of atoms like C, Si and Ge that require the formation of more than two bonds to saturate their chemical valence necessarily involves the study of reactive intermediates. By the studies on the chemistry of recoiling 31 Si atoms, the mechanistic conclusions reached are reported. The most important unanswered questions concerning the reaction of recoiling 31 Si atoms in the systems are shown, and progress has been made toward the answering. By using tetramethyl silane as a trapping agent for silicon ions, it has been established that the reaction of 31 Si ions contributes significantly to the formation of products in recoil systems. The studies by various researchers on this theme are reported. (K.I.)

Silicon solar cell performance deposited by diamond like carbon thin film ;Atomic oxygen effects;

Science.gov (United States)

Aghaei, Abbas Ail; Eshaghi, Akbar; Karami, Esmaeil

2017-09-01

In this research, a diamond-like carbon thin film was deposited on p-type polycrystalline silicon solar cell via plasma-enhanced chemical vapor deposition method by using methane and hydrogen gases. The effect of atomic oxygen on the functioning of silicon coated DLC thin film and silicon was investigated. Raman spectroscopy, field emission scanning electron microscopy, atomic force microscopy and attenuated total reflection-Fourier transform infrared spectroscopy were used to characterize the structure and morphology of the DLC thin film. Photocurrent-voltage characteristics of the silicon solar cell were carried out using a solar simulator. The results showed that atomic oxygen exposure induced the including oxidation, structural changes, cross-linking reactions and bond breaking of the DLC film; thus reducing the optical properties. The photocurrent-voltage characteristics showed that although the properties of the fabricated thin film were decreased after being exposed to destructive rays, when compared with solar cell without any coating, it could protect it in atomic oxygen condition enhancing solar cell efficiency up to 12%. Thus, it can be said that diamond-like carbon thin layer protect the solar cell against atomic oxygen exposure.

Application of neutron activation analysis for the determination of implantation profiles of phosphorus in semiconductor grade silicon

International Nuclear Information System (INIS)

Jaskolska, H.; Rowinska, L.; Walis, L.

1977-01-01

A method for the determination of concentration profiles of phosphorus in silicon by neutron activation has been elaborated. It is based on the previously described extraction methods, in which phosphorus is extracted as phosphomolybdic complex with isoamyl alcohol. It was suitably modified and Au and Ta holdback carriers were used in order to diminish the extraction of these elements together with phosphorus. The method permits to achieve decontamination factors of 10 2 -10 3 for the elements found in the Si plates examined. The yield of phosphorus separation is nearly constant and amounts to 84%. Layers are removed from the annealed plate by anodic oxidation and by dissolving the oxide formed on the surface in diluted hydrofluoric acid. The thickness of the removed layers is determined from previously prepared calibration curves. The lower limit of determination is of the order 10 -11 g P. Two groups of errors have been discussed. The suitability of autoradiography to the determination of concentration profiles has been demonstrated. Some applications of the method are suggested. (T.G.)

An indirect method for determining phosphorus in aluminium alloys by atomic-absorption spectrometry.

Science.gov (United States)

Bernal, J L; Del Nozal, M A; Deban, L; Aller, A J

1981-07-01

An indirect method is described for the determination of phosphorus in aluminium alloys. Ammonium molybdate is added to a solution of the aluminium alloy and the molybdophosphoric acid formed is selectively extracted into n-butyl acetate. The twelve molybdenum atoms associated with each phosphate ion are determined by direct atomic-absorption spectrometry with the n-butyl acetate phase in a nitrous oxide-acetylene flame, with measurement at 313.2 nm. The most suitable conditions have been established and the effect of other ions has been studied.

Dopant atoms as quantum components in silicon nanoscale devices

Science.gov (United States)

Zhao, Xiaosong; Han, Weihua; Wang, Hao; Ma, Liuhong; Li, Xiaoming; Zhang, Wang; Yan, Wei; Yang, Fuhua

2018-06-01

Recent progress in nanoscale fabrication allows many fundamental studies of the few dopant atoms in various semiconductor nanostructures. Since the size of nanoscale devices has touched the limit of the nature, a single dopant atom may dominate the performance of the device. Besides, the quantum computing considered as a future choice beyond Moore's law also utilizes dopant atoms as functional units. Therefore, the dopant atoms will play a significant role in the future novel nanoscale devices. This review focuses on the study of few dopant atoms as quantum components in silicon nanoscale device. The control of the number of dopant atoms and unique quantum transport characteristics induced by dopant atoms are presented. It can be predicted that the development of nanoelectronics based on dopant atoms will pave the way for new possibilities in quantum electronics. Project supported by National Key R&D Program of China (No. 2016YFA0200503).

Silicon heterojunction solar cells with novel fluorinated n-type nanocrystalline silicon oxide emitters on p-type crystalline silicon

Science.gov (United States)

Dhar, Sukanta; Mandal, Sourav; Das, Gourab; Mukhopadhyay, Sumita; Pratim Ray, Partha; Banerjee, Chandan; Barua, Asok Kumar

2015-08-01

A novel fluorinated phosphorus doped silicon oxide based nanocrystalline material have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) Czochralski (CZ) wafers. The n-type nc-SiO:F:H material were deposited by radio frequency plasma enhanced chemical vapor deposition. Deposited films were characterized in detail by using atomic force microscopy (AFM), high resolution transmission electron microscopy (HRTEM), Raman, fourier transform infrared spectroscopy (FTIR) and optoelectronics properties have been studied using temperature dependent conductivity measurement, Ellipsometry, UV-vis spectrum analysis etc. It is observed that the cell fabricated with fluorinated silicon oxide emitter showing higher initial efficiency (η = 15.64%, Jsc = 32.10 mA/cm2, Voc = 0.630 V, FF = 0.77) for 1 cm2 cell area compare to conventional n-a-Si:H emitter (14.73%) on flat c-Si wafer. These results indicate that n type nc-SiO:F:H material is a promising candidate for heterojunction solar cell on p-type crystalline wafers. The high Jsc value is associated with excellent quantum efficiencies at short wavelengths (<500 nm).

Three-dimensional atomic mapping of hydrogenated polymorphous silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Chen, Wanghua, E-mail: wanghua.chen@polytechnique.edu; Roca i Cabarrocas, Pere [LPICM, CNRS, Ecole Polytechnique, Université Paris-Saclay, 91128 Palaiseau (France); Pareige, Philippe [GPM, CNRS, Université et INSA de Rouen, Normandie Université, 76801 Saint Etienne du Rouvray (France)

2016-06-20

Hydrogenated polymorphous silicon (pm-Si:H) is a nanostructured material consisting of silicon nanocrystals embedded in an amorphous silicon matrix. Its use as the intrinsic layer in thin film p-i-n solar cells has led to good cell properties in terms of stability and efficiency. Here, we have been able to assess directly the concentration and distribution of nanocrystals and impurities (dopants) in p-i-n solar cells, by using femtosecond laser-assisted atom probe tomography (APT). An effective sample preparation method for APT characterization is developed. Based on the difference in atomic density between hydrogenated amorphous and crystalline silicon, we are able to distinguish the nanocrystals from the amorphous matrix by using APT. Moreover, thanks to the three-dimensional reconstruction, we demonstrate that Si nanocrystals are homogeneously distributed in the entire intrinsic layer of the solar cell. The influence of the process pressure on the incorporation of nanocrystals and their distribution is also investigated. Thanks to APT we could determine crystalline fractions as low as 4.2% in the pm-Si:H films, which is very difficult to determine by standard techniques, such as X-ray diffraction, Raman spectroscopy, and spectroscopic ellipsometry. Moreover, we also demonstrate a sharp p/i interface in our solar cells.

Phosphorus-doped silicon nanorod anodes for high power lithium-ion batteries

Directory of Open Access Journals (Sweden)

Chao Yan

2017-01-01

Full Text Available Heavy-phosphorus-doped silicon anodes were fabricated on CuO nanorods for application in high power lithium-ion batteries. Since the conductivity of lithiated CuO is significantly better than that of CuO, after the first discharge, the voltage cut-off window was then set to the range covering only the discharge–charge range of Si. Thus, the CuO core was in situ lithiated and acts merely as the electronic conductor in the following cycles. The Si anode presented herein exhibited a capacity of 990 mAh/g at the rate of 9 A/g after 100 cycles. The anode also presented a stable rate performance even at a current density as high as 20 A/g.

LiBSi{sub 2}: a tetrahedral semiconductor framework from boron and silicon atoms bearing lithium atoms in the channels

Energy Technology Data Exchange (ETDEWEB)

Zeilinger, Michael; Faessler, Thomas F. [Department of Chemistry, Technische Universitaet Muenchen, Garching (Germany); Wuellen, Leo van [Department of Physics, University of Augsburg (Germany); Benson, Daryn [Department of Physics, Arizona State University, Tempe, AZ (United States); Kranak, Verina F.; Konar, Sumit; Haeussermann, Ulrich [Department of Materials and Environmental Chemistry, Stockholm University (Sweden)

2013-06-03

Silicon swallows up boron. The novel open tetrahedral framework structure (OTF) of the Zintl phase LiBSi{sub 2} was made by applying high pressure to a mixture of LiB and elemental silicon. The compound represents a new topology in the B-Si net (called tum), which hosts Li atoms in the channels. LiBSi{sub 2} is the first example where B and Si atoms form an ordered common framework structure with B engaged exclusively in heteronuclear B-Si contacts. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Geometric stability and electronic structure of infinite and finite phosphorus atomic chains

International Nuclear Information System (INIS)

Qiao Jingsi; Zhou Linwei; Ji Wei

2017-01-01

One-dimensional mono- or few-atomic chains were successfully fabricated in a variety of two-dimensional materials, like graphene, BN, and transition metal dichalcogenides, which exhibit striking transport and mechanical properties. However, atomic chains of black phosphorus (BP), an emerging electronic and optoelectronic material, is yet to be investigated. Here, we comprehensively considered the geometry stability of six categories of infinite BP atomic chains, transitions among them, and their electronic structures. These categories include mono- and dual-atomic linear, armchair, and zigzag chains. Each zigzag chain was found to be the most stable in each category with the same chain width. The mono-atomic zigzag chain was predicted as a Dirac semi-metal. In addition, we proposed prototype structures of suspended and supported finite atomic chains. It was found that the zigzag chain is, again, the most stable form and could be transferred from mono-atomic armchair chains. An orientation dependence was revealed for supported armchair chains that they prefer an angle of roughly 35 ° –37 ° perpendicular to the BP edge, corresponding to the [110] direction of the substrate BP sheet. These results may promote successive research on mono- or few-atomic chains of BP and other two-dimensional materials for unveiling their unexplored physical properties. (special topic)

Near-Infrared Phosphorus-Substituted Rhodamine with Emission Wavelength above 700 nm for Bioimaging.

Science.gov (United States)

Chai, Xiaoyun; Cui, Xiaoyan; Wang, Baogang; Yang, Fan; Cai, Yi; Wu, Qiuye; Wang, Ting

2015-11-16

Phosphorus has been successfully fused into a classic rhodamine framework, in which it replaces the bridging oxygen atom to give a series of phosphorus-substituted rhodamines (PRs). Because of the electron-accepting properties of the phosphorus moiety, which is due to effective σ*-π* interactions and strengthened by the inductivity of phosphine oxide, PR exhibits extraordinary long-wavelength fluorescence emission, elongating to the region above 700 nm, with bathochromic shifts of 140 and 40 nm relative to rhodamine and silicon-substituted rhodamine, respectively. Other advantageous properties of the rhodamine family, including high molar extinction coefficient, considerable quantum efficiency, high water solubility, pH-independent emission, great tolerance to photobleaching, and low cytotoxicity, stay intact in PR. Given these excellent properties, PR is desirable for NIR-fluorescence imaging in vivo. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Silicon carbide transparent chips for compact atomic sensors

Science.gov (United States)

Huet, L.; Ammar, M.; Morvan, E.; Sarazin, N.; Pocholle, J.-P.; Reichel, J.; Guerlin, C.; Schwartz, S.

2017-11-01

Atom chips [1] are an efficient tool for trapping, cooling and manipulating cold atoms, which could open the way to a new generation of compact atomic sensors addressing space applications. This is in particular due to the fact that they can achieve strong magnetic field gradients near the chip surface, hence strong atomic confinement at moderate electrical power. However, this advantage usually comes at the price of reducing the optical access to the atoms, which are confined very close to the chip surface. We will report at the conference experimental investigations showing how these limits could be pushed farther by using an atom chip made of a gold microcircuit deposited on a single-crystal Silicon Carbide (SiC) substrate [2]. With a band gap energy value of about 3.2 eV at room temperature, the latter material is transparent at 780nm, potentially restoring quasi full optical access to the atoms. Moreover, it combines a very high electrical resistivity with a very high thermal conductivity, making it a good candidate for supporting wires with large currents without the need of any additional electrical insulation layer [3].

Influence of the growth-surface on the incorporation of phosphorus in SiC

International Nuclear Information System (INIS)

Rauls, E.; Gerstmann, U.; Frauenheim, Th.

2005-01-01

Phosphorus is a common and desired n-type dopant of SiC, but it turned out that doping by diffusion or during growth is rarely successful. To avoid the efforts and the creation of damage if ion implantation is used instead, these techniques were, though, highly desirable. In this work, we have investigated theoretically the experimental observation that phosphorus obviously hardly diffuses into the material. Not the diffusivity of the dopant but its addiction to occupy a three-fold coordinated surface site are critical, together with the way the surface affects the bulk migration barriers of the dopants. Whereas the most common growth direction for 4H-SiC, the polar silicon terminated (0001) surface, seems to be least appropriate for the incorporation of phosphorus atoms, growth along the nonpolar [112-bar 0] provides a good possibility to achieve efficient P-doping during growth

Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

Science.gov (United States)

Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

2016-12-28

The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiC x (p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiC x (p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiC x (p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm -2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a V oc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p + /p-wafer full-side-passivated rear-side scheme shown here.

Impurity-defect complexes in hydrogenated amorphous silicon

International Nuclear Information System (INIS)

Yang, L.H.; Fong, C.Y.; Nichols, C.S.

1991-01-01

The two most outstanding features observed for dopants in hydrogenated amorphous silicon (a-Si:H)-a shift in the Fermi level accompanied by an increase in the defect density and an absence of degenerate doping have previously been postulated to stem from the formation of substitutional dopant-dangling bond complexes. Using first-principles self-consistent pseudopotential calculations in conjunction with a supercell model for the amorphous network and the ability of network relaxation from the first-principles results. The authors have studied the electronic and structural properties of substitutional fourfold-coordinated phosphorus and boron at the second neighbor position to a dangling bond defect. This paper demonstrates that such impurity-defect complexes can account for the general features observed experimentally in doped a-Si:H

Two-electron spin correlations in precision placed donors in silicon.

Science.gov (United States)

Broome, M A; Gorman, S K; House, M G; Hile, S J; Keizer, J G; Keith, D; Hill, C D; Watson, T F; Baker, W J; Hollenberg, L C L; Simmons, M Y

2018-03-07

Substitutional donor atoms in silicon are promising qubits for quantum computation with extremely long relaxation and dephasing times demonstrated. One of the critical challenges of scaling these systems is determining inter-donor distances to achieve controllable wavefunction overlap while at the same time performing high fidelity spin readout on each qubit. Here we achieve such a device by means of scanning tunnelling microscopy lithography. We measure anti-correlated spin states between two donor-based spin qubits in silicon separated by 16 ± 1 nm. By utilising an asymmetric system with two phosphorus donors at one qubit site and one on the other (2P-1P), we demonstrate that the exchange interaction can be turned on and off via electrical control of two in-plane phosphorus doped detuning gates. We determine the tunnel coupling between the 2P-1P system to be 200 MHz and provide a roadmap for the observation of two-electron coherent exchange oscillations.

Ab Initio Assessment of the Bonding in Disulfonates Containing Divalent Nitrogen and Phosphorus Atoms

DEFF Research Database (Denmark)

Andersen, Vinca Bonde; Berg, Rolf W.; Shim, Irene

2017-01-01

The iminodisulfonate, [N(SO3)2]3–, and phosphinodisulfonate, [P(SO3)2]3–, ions have been investigated by performing ab initio MP2/6-311+G**calculations. The nitrogen and phosphorus atoms as part of the ions are shown to be divalent with a negative charge and two lone pairs on the nitrogen...

Combination of silicon nitride and porous silicon induced optoelectronic features enhancement of multicrystalline silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Rabha, Mohamed Ben; Dimassi, Wissem; Gaidi, Mounir; Ezzaouia, Hatem; Bessais, Brahim [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

2011-06-15

The effects of antireflection (ARC) and surface passivation films on optoelectronic features of multicrystalline silicon (mc-Si) were investigated in order to perform high efficiency solar cells. A double layer consisting of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride (SiN{sub x}) on porous silicon (PS) was achieved on mc-Si surfaces. It was found that this treatment decreases the total surface reflectivity from about 25% to around 6% in the 450-1100 nm wavelength range. As a result, the effective minority carrier diffusion length, estimated from the Laser-beam-induced current (LBIC) method, was found to increase from 312 {mu}m for PS-treated cells to about 798 {mu}m for SiN{sub x}/PS-treated ones. The deposition of SiN{sub x} was found to impressively enhance the minority carrier diffusion length probably due to hydrogen passivation of surface, grain boundaries and bulk defects. Fourier Transform Infrared Spectroscopy (FTIR) shows that the vibration modes of the highly suitable passivating Si-H bonds exhibit frequency shifts toward higher wavenumber, depending on the x ratio of the introduced N atoms neighbors. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Description of mutual interactions between silicon and phosphorus in Andisols by mathematical and mechanistic models.

Science.gov (United States)

Cartes, Paula; Cea, Mara; Jara, Alejandra; Violante, Antonio; de la Luz Mora, María

2015-07-01

The Freundlich model and the Constant Capacitance Model (CCM) were used to describe silicon (Si) and phosphorus (P) sorption, both individually and for binary P-Si systems, on two Andisols with different chemical properties: Freire soil (FS) and Piedras Negras soil (PNS). Silicon sorption kinetics were examined through the Elovich equation, revealing that the initial sorption rate was 16 times greater in PNS. The Freundlich equation provides a good fit to the sorption data for both Andisols. When compared with FS, larger Si sorption capacity and lower Si affinity for the surface sites were observed in PNS; nevertheless, Si sorption decreased in both soils as P sorption increased. Slight reductions in P sorption capacity due to the presence of Si were found, whereas there was no apparent effect on P bonding intensity. The CCM was able to describe Si adsorption, and potentiometric titrations support that Si seems to be specifically sorbed mainly onto sites of negative charge. Comparable log KSiint values were obtained for both soils, indicating that Si was bound on similar sites. Phosphorus sorption was well described by the CCM, and log KPint denoted strong interactions of P with the surface sites. For binary systems, log KPint did not vary with increasing Si concentration; comparatively, log KSiint scarcely decreased with increasing P concentration in PNS, but a 28% reduction was found in FS at the highest initial P concentration. Copyright © 2015 Elsevier Ltd. All rights reserved.

Study of phosphorus implanted and annealed silicon by electrical measurements and ion channeling technique

CERN Document Server

Hadjersi, T; Zilabdi, M; Benazzouz, C

2002-01-01

We investigated the effect of annealing temperature on the electrical activation of phosphorus implanted into silicon. The measurements performed using spreading resistance, four-point probe and ion channeling techniques have allowed us to establish the existence of two domains of variation of the electrical activation (350-700 deg. C) and (800-1100 deg. C). The presence of reverse annealing and the annihilation of defects have been put in a prominent position in the first temperature range. It has been shown that in order to achieve a complete electrical activation, the annealing temperature must belong to the second domain (800-1100 deg. C).

Phosphorus determination by various substoichiometric methods

International Nuclear Information System (INIS)

Shigematsu, Toshio; Kudo, Kiyoshi

1981-01-01

Various substoichiometric methods have been classified from a view point of the substoichiometric separation. Based upon the substoichiometric separation, phosphorus was determined substoichiometrically by a direct method, a method of carrier amount variation and a comparison method for the irradiated sample. The direct method was applied to the determination of phosphorus in orchard leaves (SRM-1571). The analytical value was 0.23 +- 0.01%. Phosphorus in orchard leaves and spinach (SRM-1570) was determined by an ordinary method which devided the sample into equal parts in the method of carrier amount variation. Analytical values of orchard leaves and spinach were 0.22 +- 0.02% and 0.56 +- 0.04%, respectively. Moreover, a new modification of the method of carrier amount variation was studied by the use of various standard samples such as red phosphorus, spinach and orchard leaves. These standard samples were also employed for the determination of phosphorus in orchard leaves and 0.21 +- 0.01% was obtained. All these results are in good agreement with the value reported by NBS. The comparison method was applied to the determination of phosphorus in a semiconductor silicon single crystal. As a result of the correction of 32 P activity induced by the secondary nuclear reaction of 30 Si, 7.9 ppb and 3.1 ppb were obtained for the phosphorus concentrations in the single crystal silicon. (author)

Black phosphorus induced photo-doping for high-performance organic-silicon heterojunction photovoltaics

Institute of Scientific and Technical Information of China (English)

Zhouhui Xia; Pengfei Li; Yuqiang Liu; Tao Song; Qiaoliang Bao; Shuit-Tong Lee; Baoquan Sun

2017-01-01

In conventional crystalline silicon (Si) homojunction solar cells,a strategy of doping by transporting phosphorus or boron impurities into Si is commonly used to build Ohmic contacts at rear electrodes.However,this technique involves an energy intensive,high temperature (～ 800 ℃) process and toxic doping materials.Black phosphorus (BP) is a two-dimensional,narrow bandgap semiconductor with high carrier mobility that exhibits broad light harvesting properties.Here,we place BP:zinc oxide (ZnO) composite films between Si and aluminum (Al) to improve their contact.Once the BP harvests photons with energies below 1.1 eV from the crystalline Si,the ZnO carrier concentration increases dramatically due to charge injection.This photo-induced doping results in a high carrier concentration in the ZnO film,mimicking the modulated doping technique used in semiconductor heterojunctions.We show that photo-induced carriers dramatically increase the conductivities of the BP-modified ZnO films,thus reducing the contact resistance between Si and Al.A photovoltaic power conversion efficiency of 15.2％ is achieved in organic-Si heterojunction solar cells that use a ZnO:BP layer.These findings demonstrate an effective way of improving Si/metal contact via a simple,low temperature process.

Experimental evidence of six-fold oxygen coordination for phosphorus and XANES calculations

Energy Technology Data Exchange (ETDEWEB)

Flank, A-M; Trcera, N; Itie, J-P; Lagarde, P [Synchrotron Soleil, L' Orme des Merisiers, BP 48, 91192 Gif sur Yvette (France); Brunet, F [Laboratoire de Geologie, CNRS-ENS-UMR8538, 24 rue Lhommond, 75005 Paris (France); Irifune, T [Geodynamics Research Center, Ehime University, Matsuyama 790-8577 (Japan)

2009-11-15

Phosphorus, a group V element, has always been found so far in minerals, biological systems and synthetic compounds with an oxygen coordination number of four (i.e, PO{sub 4} groups). We demonstrate here using phosphorus K-edge XANES spectroscopy that this element can also adopt a six-fold oxygen coordination (i.e, PO{sub 6} groups). This new coordination was achieved in AlPO{sub 4} doped SiO{sub 2} stishovite synthesized at 18 GPa and 1873 K and quenched down to ambient conditions. The well-crystallized P-bearing stishovite grains (up to 100{mu}m diameter) were embedded in the back-transformation products of high pressure form of AlPO{sub 4} matrix. They were identified by elemental mapping ({mu}-XRF). {mu}-XANES spectra collected at the Si and P K edges in the Si rich region with a very low concentration of P present striking resemblance, Si itself being characteristic of pure stishovite. We can therefore infer that phosphorus in the corresponding stishovite crystal is involved in an octahedral coordination made of six oxygen atoms. First principle XANES calculations using a plane-wave density functional formalism with core-hole effects treated in a supercell approach at the P K edge for a P atom substituting an Si one in the stishovite structure confirm this assertion. This result shows that in the lower-mantle where all silicon is six-fold coordinated, phosphorus has the crystal-chemical ability to remain incorporated into silicate structures.

Experimental evidence of six-fold oxygen coordination for phosphorus and XANES calculations

Science.gov (United States)

Flank, A.-M.; Trcera, N.; Brunet, F.; Itié, J.-P.; Irifune, T.; Lagarde, P.

2009-11-01

Phosphorus, a group V element, has always been found so far in minerals, biological systems and synthetic compounds with an oxygen coordination number of four (i.e, PO4 groups). We demonstrate here using phosphorus K-edge XANES spectroscopy that this element can also adopt a six-fold oxygen coordination (i.e, PO6 groups). This new coordination was achieved in AlPO4 doped SiO2 stishovite synthesized at 18 GPa and 1873 K and quenched down to ambient conditions. The well-crystallized P-bearing stishovite grains (up to 100μm diameter) were embedded in the back-transformation products of high pressure form of AlPO4 matrix. They were identified by elemental mapping (μ-XRF). μ-XANES spectra collected at the Si and P K edges in the Si rich region with a very low concentration of P present striking resemblance, Si itself being characteristic of pure stishovite. We can therefore infer that phosphorus in the corresponding stishovite crystal is involved in an octahedral coordination made of six oxygen atoms. First principle XANES calculations using a plane-wave density functional formalism with core-hole effects treated in a supercell approach at the P K edge for a P atom substituting an Si one in the stishovite structure confirm this assertion. This result shows that in the lower-mantle where all silicon is six-fold coordinated, phosphorus has the crystal-chemical ability to remain incorporated into silicate structures.

Experimental evidence of six-fold oxygen coordination for phosphorus and XANES calculations

International Nuclear Information System (INIS)

Flank, A-M; Trcera, N; Itie, J-P; Lagarde, P; Brunet, F; Irifune, T

2009-01-01

Phosphorus, a group V element, has always been found so far in minerals, biological systems and synthetic compounds with an oxygen coordination number of four (i.e, PO 4 groups). We demonstrate here using phosphorus K-edge XANES spectroscopy that this element can also adopt a six-fold oxygen coordination (i.e, PO 6 groups). This new coordination was achieved in AlPO 4 doped SiO 2 stishovite synthesized at 18 GPa and 1873 K and quenched down to ambient conditions. The well-crystallized P-bearing stishovite grains (up to 100μm diameter) were embedded in the back-transformation products of high pressure form of AlPO 4 matrix. They were identified by elemental mapping (μ-XRF). μ-XANES spectra collected at the Si and P K edges in the Si rich region with a very low concentration of P present striking resemblance, Si itself being characteristic of pure stishovite. We can therefore infer that phosphorus in the corresponding stishovite crystal is involved in an octahedral coordination made of six oxygen atoms. First principle XANES calculations using a plane-wave density functional formalism with core-hole effects treated in a supercell approach at the P K edge for a P atom substituting an Si one in the stishovite structure confirm this assertion. This result shows that in the lower-mantle where all silicon is six-fold coordinated, phosphorus has the crystal-chemical ability to remain incorporated into silicate structures.

Double crystal X-ray analysis of phosphorus precipitation in supersaturated Si-P solid solutions

International Nuclear Information System (INIS)

Servidori, M.; Zini, Q.; Dal Monte, C.

1983-01-01

The physical nature of the electrically inactive phosphorus in silicon is investigated by double crystal X-ray diffraction measurements. This analysis is performed on laser annealed supersaturated samples, doped by ion implantation up to 5 x 10 21 cm -3 . After isothermal heat treatments, these solid solutions show marked reductions in the electrically active phosphorus concentration. In particular, 850 0 C heatings give rise to a carrier concentration which corresponds to the phosphorus solubility in equilibrium with the inactive dopant. This dopant is characterized by means of lattice strain measurements: they are found consistent with the presence of perfectly coherent cubic SiP precipitates. This result is in agreement with the one obtained in preceeding works by electrical measurements and transmission electron microscopy observations and contradicts the hypothesis that the excess dopant atoms are, at least in part, charged point defects (E-centres). (author)

Preservation of atomically clean silicon surfaces in air by contact bonding

DEFF Research Database (Denmark)

Grey, Francois; Ljungberg, Karin

1997-01-01

When two hydrogen-passivated silicon surfaces are placed in contact under cleanroom conditions, a weak bond is formed. Cleaving this bond under ultrahigh vacuum (UHV) conditions, and observing the surfaces with low energy electron diffraction and scanning tunneling microscopy, we find that the or...... reconstruction from oxidation in air, Contact bonding opens the way to novel applications of reconstructed semiconductor surfaces, by preserving their atomic structure intact outside of a UHV chamber. (C) 1997 American Institute of Physics.......When two hydrogen-passivated silicon surfaces are placed in contact under cleanroom conditions, a weak bond is formed. Cleaving this bond under ultrahigh vacuum (UHV) conditions, and observing the surfaces with low energy electron diffraction and scanning tunneling microscopy, we find...... that the ordered atomic structure of the surfaces is protected from oxidation, even after the bonded samples have been in air for weeks. Further, we show that silicon surfaces that have been cleaned and hydrogen-passivated in UHV can be contacted in UHV in a similarly hermetic fashion, protecting the surface...

Transmutation doping of silicon solar cells

Science.gov (United States)

Wood, R. F.; Westbrook, R. D.; Young, R. T.; Cleland, J. W.

1977-01-01

Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.

Processing of Phosphorus Slag with Recovery of Rare Earth Metals and Obtaining Silicon Containing Cake

Science.gov (United States)

Karshigina, Zaure; Abisheva, Zinesh; Bochevskaya, Yelena; Akcil, Ata; Sharipova, Aynash; Sargelova, Elmira

2016-10-01

The present research is devoted to the processing of slag generating during the yellow phosphorus production. In this paper are presented studies on leaching of phosphorus production slag by nitric acid with recovery of rare earth metals (REMs) into solution. REMs recovery into the solution achieved 98 % during the leaching process with using 7.5 mol/L of HNO3, liquid-to-solid ratio is 2.6:1, temperature is 60°C, process duration is 1 hour and stirrer speed is 500 rpm. Behaviour during the leaching of associated components such as calcium, aluminium, and iron was studied. After the leaching cake contains ∼⃒75-85 % of SiO2 and it might be useful for obtaining of precipitated silicon dioxide. With the purpose of separation from the impurities, recovery and concentrating of REMs, the obtained solution after leaching was subjected to extraction processing methods. The influence of ratio of organic and aqueous phases (O: A) on the extraction of rare earth metals by tributyl phosphate (TBP) with concentrations from 20 up to 100 % was studied. The REMs extraction with increasing TBP concentration under changes O:A ratio from 1:20 down to 1:1 into the organic phase from the solutions after nitric acid leaching increased from 22.2 up to 99.3%. The duration effect of REMs extraction process was studied by tributyl phosphate. It is revealed that with increasing of duration of the extraction process from 10 to 30 minutes REMs recovery into the organic phase almost did not changed. The behaviour of iron in the extraction process by TBP was studied. It was found that such accompanying components as calcium and aluminium by tributyl phosphate didn't extracted. To construct isotherm of REMs extraction of by tributyl phosphate was used variable volume method. It was calculated three-step extraction is needed for REMs recovery from the solutions after nitric acid leaching of phosphorus production slag. The process of the three-steps counter current extraction of rare earth

A new model of anomalous phosphorus diffusion in silicon

International Nuclear Information System (INIS)

Budil, M.; Poetzl, H.; Stingeder, G.; Grasserbauer, M.

1989-01-01

A model is presented to describe the 'kink and tail' diffusion of phosphorus. The diffusion behaviour of phosphorus is expplained by the motion of phosphorus-interstitial and phosphorus-vacancy pairs in different charge states. The model yields the enhancement of diffusion in the tail region depending on surface concentration. Furthermore it yields the same selfdiffusion coefficient for interstitials as the gold diffusion experiments. A transformation of the diffusion equation was found to reduce the number of simulation equations. (author) 7 refs., 5 figs

„New approaches to atomic force microscope lithography on silicon"

DEFF Research Database (Denmark)

Birkelund, Karen; Thomsen, Erik Vilain; Rasmussen, Jan Pihl

1997-01-01

We have investigated new approaches to the formation of conducting nanowires on crystalline silicon surfaces using atomic force microscope (AFM) lithography. To increase processing speed and reduce wear of the AFM tip, large-scale structures are formed with a direct laser write setup, while the AFM...

Recent results from the chemistry of recoiling carbon and silicon atoms: The interplay between hot atom chemistry and gas kinetics

International Nuclear Information System (INIS)

Gaspar, P.P.; Garmestani, K.; Ferrieri, R.A.; Wolf, A.P.

1990-01-01

Recent results from the chemistry of recoiling carbon and silicon atoms illustrate the power of an experimental approach to the solution of complex mechanistic problems that combines the study of the reactions of recoiling atoms with conventional gas kinetic techniques. Included will be the reactions of 11 C atoms with anisole, addressing the question whether an aromatic pi-electron system can compete as a reactive site with carbon-hydrogen bonds

Positron probing of open vacancy volume of phosphorus-vacancy complexes in float-zone n-type silicon irradiated by 0.9-MeV electrons and by 15-MeV protons

Energy Technology Data Exchange (ETDEWEB)

Arutyunov, Nikolay [Department of Physics, Martin Luther University Halle (Germany); Ioffe Physico-Technical Institute, St. Petersburg (Russian Federation); Institute of Ion-Plasma and Laser Technologies (Institute of Electronics), Tashkent (Uzbekistan); Emtsev, Vadim; Oganesyan, Gagik [Ioffe Physico-Technical Institute, St. Petersburg (Russian Federation); Elsayed, Mohamed [Department of Physics, Martin Luther University Halle (Germany); Faculty of Science, Department of Physics, Minia University (Egypt); Krause-Rehberg, Reinhard [Department of Physics, Martin Luther University Halle (Germany); Abrosimov, Nikolay [Leibniz Institute for Crystal Growth, Berlin (Germany); Kozlovski, Vitalii [St. Petersburg State Polytechnical University (Russian Federation)

2017-07-15

For the first time the samples, cut from the same wafer of crystals of float-zone silicon, n-FZ-Si(P) and n-FZ-Si(Bi), were subjected to irradiation with 0.9-MeV electrons and 15-MeV protons at RT for studying them by low-temperature positron annihilation lifetime spectroscopy. Measurements of Hall effect have been used for the materials characterization. The discussion is focused on the open vacancy volume (V{sub op}) of the thermally stable group-V-impurity-vacancy complexes comprising the phosphorus atoms; the bismuth-related vacancy complexes are briefly considered. The data of positron probing of PV pairs (E-centers), divacancies, and the thermally stable defects in the irradiated n-FZ-Si(P) materials are compared. Beyond a reliable detecting of the defect-related positron annihilation lifetime in the course of isochronal annealing at ∝ 500 C, the recovery of concentration of phosphorus-related shallow donor states continues up to ∝650-700 C. The open vacancy volumes V{sub op} to be characterized by long positron lifetimes Δτ{sub 2} ∝271-289 ps in (gr.-V-atom)-V{sub op} complexes are compared with theoretical data available for the vacancies, τ(V{sub 1}), and divacancies, τ(V{sub 2}). The extended semi-vacancies, 2V{sub s-ext}, and relaxed vacancies, 2V{sub inw}, are proposed as the open volume V{sub op} in (gr.-V-atom)-V{sub op} complexes. It is argued that at high annealing temperature the defect P{sub s}-V{sub op}-P{sub s} is decomposed. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Boron, arsenic and phosphorus dopant incorporation during low temperature low pressure silicon epitaxial growth

International Nuclear Information System (INIS)

Borland, J.O.; Thompson, T.; Tagle, V.; Benzing, W.

1987-01-01

Submicron silicon epitaxial structures with very abrupt epi/substrate transition widths have been realized through the use of low temperature silicon epitaxial growth techniques. At these low temperature and low pressure epitaxial growth conditions there is minimal, if any, dopant diffusion from the substrate into the epilayer during deposition. The reincorporation of autodoped dopant as well as the incorporation of intentional dopant can be a trade-off at low temperatures and low pressures. For advanced CMOS and Bi-CMOS technologies, five to six orders of magnitude change in concentration levels are desirable. In this investigation, all of the epitaxial depositions were carried out in an AMC-7810 epi-reactor with standard jets for a turbulent mixing system, and using a modified center inject configuration to achieve a single pass laminar flow system. To simulate the reincorporation of various autodoped dopant, the authors ran a controlled dopant flow of 100 sccm for each of the three dopants (boron, phosphorus and arsenic) to achieve the controlled background dopant level in the reactor gas stream

2 mm range ESR of the transmutation-produced phosphorus impurity in 6HSiC

International Nuclear Information System (INIS)

Kalabukhova, E.N.; Lukin, S.N.; Mokhov, E.N.

1993-01-01

Phosphorus impurity is introduced into 6HSiC monocrystals via neutron transmutation doping. Parameters of ESR two spectra referred to ESR spectra of separated phosphorus atoms in the lattice cubic and hexagonal position are detected and determined in the specimens at T=4.2 K. variation dynamics of ESR spectra of phosphorus and nitrogen within 4.2-73 K temperature range is studied. Ionization energies of phosphorus atoms are determined to be less, than those of nitrogen atoms, and ionization energy of phosphorus atoms in hexagonal position is higher, than that of phosphorus atoms in cubic position

Embedded atom approach for gold–silicon system from ab initio

Indian Academy of Sciences (India)

In the present paper, an empirical embedded atom method (EAM) potential for gold–silicon (Au–Si) is developed by fitting to ab initio force (the 'force matching' method) and experimental data. The force database is generated within ab initio molecular dynamics (AIMD). The database includes liquid phase at various ...

Phosphorus-containing podands. 14. Effect of alkyl substituents at phosphorus atom on complexing ability of neutral monopodands. On the nature of abnormal alkyl effect

International Nuclear Information System (INIS)

Tsvetkov, E.N.; Evreinov, V.I.; Bondarenko, N.A.; Safronova, Z.V.

1996-01-01

The previously revealed unusual effect of alkyl substituents at phosphorus atom in phosphorus-containing monopodands of the general formula o-R 2 P(O)C 6 H 4 (OCH 2 CH 2 ) n OC 6 H 4 P(O)R 2 -o, n=1-5, R = Alk, Ph, OEt on their complexing ability towards alkali metals cations has been interpreted. Alkyl radicals create great spatial obstacles to rotation of R 2 P(O) fragments around the C-P bond as compared with other substituents, which gives rise to the appearance of anomalous alkyl effect. Solvation is an additional factor, which can bring about the anomalous effect appearance or a change in the degree of its pronouncement. 47 refs.; 3 figs.; 7 tabs

Determination of phosphorus distribution in the region of a SiO2-Si interface by substoichiometric analysis

International Nuclear Information System (INIS)

Shigematsu, T.; Yonezawa, H.

1994-01-01

A simplified method for the substoichiometric analysis of phosphorus has been developed and applied to determine the concentration distribution of phosphorus in the region of a SiO 2 -Si interface in order to explain why phosphorus is lost from the ion-implanted silicon surface throughout the oxidation and oxide removal processes. It is revealed that phosphorus piles up on the SiO 2 side at the interface by the thermal oxidation of silicon surface and is removed with the oxide by wet etching and with the resulting silicon by RCA cleaning. This results in a total loss of ion-implanted phosphorus of 3.5%. (author) 11 refs.; 2 figs.; 3 tabs

Computer Simulation of Energy Parameters and Magnetic Effects in Fe-Si-C Ternary Alloys

Science.gov (United States)

Ridnyi, Ya. M.; Mirzoev, A. A.; Mirzaev, D. A.

2018-06-01

The paper presents ab initio simulation with the WIEN2k software package of the equilibrium structure and properties of silicon and carbon atoms dissolved in iron with the body-centered cubic crystal system of the lattice. Silicon and carbon atoms manifest a repulsive interaction in the first two nearest neighbors, in the second neighbor the repulsion being stronger than in the first. In the third and next-nearest neighbors a very weak repulsive interaction occurs and tends to zero with increasing distance between atoms. Silicon and carbon dissolution reduces the magnetic moment of iron atoms.

Chemical analysis of carbonates and carbonate rocks by atomic absorption analysis

Energy Technology Data Exchange (ETDEWEB)

Tardon, S

1981-01-01

Evaluates methods of determining chemical composition of rocks surrounding black coal seams. Carbonate rock samples were collected in the Ostrava-Karvina coal mines. Sampling methods are described. Determination of the following elements and compounds in carbonate rocks is discussed: calcium, magnesium, iron, manganese, barium, silicon, aluminium, titanium, sodium, potassium, sulfur trioxide, phosphorus pentoxide, water and carbon dioxide. Proportion of compounds insoluble in water in the investigated rocks is also determined. Most of the elements are determined by means of atomic absorption analysis. Phosphorus is also determined by atomic absorption analysis. Other compounds are determined gravimetrically. The described procedure permits weight of a rock sample to be reduced to 0.5 g without reducing analysis accuracy. The results of determining carbonate rock components by X-ray analysis and by chemical analysis are compared. Equipment used for atomic absorption analysis is characterized (the 503 Perkin-Elmer and the CF-4 Optica-Milano spectrophotometers). The analyzed method for determining carbonate rock permits more accurate classification of rocks surrounding coal seams and rock impurities in run-of-mine coal. (22 refs.) (In Czech)

Silicon Nano fabrication by Atomic Force Microscopy-Based Mechanical Processing

International Nuclear Information System (INIS)

Miyake, Sh.; Wang, M.; Kim, J.

2014-01-01

This paper reviews silicon nano fabrication processes using atomic force microscopy (AFM). In particular, it summarizes recent results obtained in our research group regarding AFM-based silicon nano fabrication through mechanochemical local oxidation by diamond tip sliding, as well as mechanical, electrical, and electromechanical processing using an electrically conductive diamond tip. Microscopic three-dimensional manufacturing mainly relies on etching, deposition, and lithography. Therefore, a special emphasis was placed on nano mechanical processes, mechanochemical reaction by potassium hydroxide solution etching, and mechanical and electrical approaches. Several important surface characterization techniques consisting of scanning tunneling microscopy and related techniques, such as scanning probe microscopy and AFM, were also discussed.

Optical coupling between atomically thin black phosphorus and a two dimensional photonic crystal nanocavity

Science.gov (United States)

Ota, Yasutomo; Moriya, Rai; Yabuki, Naoto; Arai, Miho; Kakuda, Masahiro; Iwamoto, Satoshi; Machida, Tomoki; Arakawa, Yasuhiko

2017-05-01

Atomically thin black phosphorus (BP) is an emerging two dimensional (2D) material exhibiting bright photoluminescence in the near infrared region. Coupling its radiation to photonic nanostructures will be an important step toward the realization of 2D material based nanophotonic devices that operate efficiently in the near infrared region, which includes the technologically important optical telecommunication wavelength bands. In this letter, we demonstrate the optical coupling between atomically thin BP and a 2D photonic crystal nanocavity. We employed a home-build dry transfer apparatus for placing a thin BP flake on the surface of the nanocavity. Their optical coupling was analyzed through measuring cavity mode emission under optical carrier injection at room temperature.

Atomic hydrogen and oxygen adsorptions in single-walled zigzag silicon nanotubes

International Nuclear Information System (INIS)

Chen, Haoliang; Ray, Asok K.

2013-01-01

Ab initio calculations have been performed to study the electronic and geometric structure properties of zigzag silicon nanotubes. Full geometry and spin optimizations have been performed without any symmetry constraints with an all electron 3-21G* basis set and the B3LYP hybrid functional. The largest zigzag SiNT studied here, (12, 0), has a binding energy per atom of 3.584 eV. Atomic hydrogen and oxygen adsorptions on (9, 0) and (10, 0) nanotubes have also been studied by optimizing the distances of the adatoms from both inside and outside the tube. The adatom is initially placed in four adsorption sites-parallel bridge (PB), zigzag bridge (ZB), hollow, and on-top site. The on-top site is the most preferred site for hydrogen atom adsorbed on (9, 0), with an adsorption energy of 3.0 eV and an optimized distance of 1.49 Å from the adatom to the nearest silicon atom. For oxygen adsorption on (9, 0), the most preferred site is the ZB site, with an adsorption energy of 5.987 eV and an optimized distance of 1.72 Å. For atomic hydrogen adsorption on (10, 0), the most preferred site is also the on-top site with an adsorption energy of 3.174 eV and an optimized distance of 1.49 Å. For adsorption of atomic oxygen on (10, 0), the most preferred site is PB site, with an adsorption energy of 6.306 eV and an optimized distance of 1.71 Å. The HOMO–LUMO gaps of (9, 0) after adsorptions of hydrogen and oxygen atoms decrease while the HOMO–LUMO gaps of (10, 0) increase after adsorption of hydrogen and oxygen

Reactor neutron activation analysis for aluminium in the presence of phosphorus and silicon. Contributions of /sup 28/Al activities from /sup 31/P (n,. cap alpha. ) /sup 28/Al and /sup 28/Si (n,p) /sup 28/Al reactions

Energy Technology Data Exchange (ETDEWEB)

Mizumoto, Yoshihiko (Kinki Univ., Higashi-Osaka, Osaka (Japan). Faculty of Science and Technology); Iwata, Shiro; Sasajima, Kazuhisa; Yoshimasu, Fumio; Yase, Yoshiro

1984-01-01

Reactor neutron activation analysis for aluminium in samples containing phosphorus and silicon was studied. The experiments were performed by using pneumatic tube of the Kyoto University Reactor (KUR). At first, the ratios of the /sup 28/Al activity produced from /sup 27/Al(n, ..gamma..) /sup 28/Al reaction by thermal neutrons to that from /sup 31/P(n, ..cap alpha..)/sup 28/Al reaction by fast neutrons, and to that from /sup 28/Si(n, p)/sup 28/Al reaction were measured by ..gamma..-ray spectrometry. With a ratio of about 5 for the thermal to fast neutron flux of KUR, the ratio of the /sup 28/Al activity from aluminium to that from phosphorus was to be 812 +- 7, and to that from silicon 282 +- 3. Secondly, the contributions of /sup 28/Al activities from phosphorus and silicon and the determination limit of aluminium were calculated for various parameters, such as fast neutron flux, thermal to fast neutron flux ratio, amounts of phosphorus and silicon, etc. Thirdly, on the basis of these results, aluminium contents in spinal cords and brains of amyotrophic lateral sclerosis, Parkinsonism-dementia complex and control cases were determined.

Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride

International Nuclear Information System (INIS)

Wang, Hongzhe; Chen, Chao; Pan, Miao; Sun, Yiling; Yang, Xi

2015-01-01

Graphical abstract: - Highlights: • The phosphorus-doped SiN x with negative fixed charge was deposited by PECVD. • The increase of lifetime was observed on P-doped SiN x passivated Si under illumination. • The enhancement of lifetime was caused by the increase of negative fixed charges. - Abstract: This study reports a doubling of the effective minority carrier lifetime under light soaking conditions, observed in a boron-doped p-type Czochralski grown silicon wafer passivated by a phosphorus-doped silicon nitride thin film. The analysis of capacitance–voltage curves revealed that the fixed charge in this phosphorus-doped silicon nitride film was negative, which was unlike the well-known positive fixed charges observed in traditional undoped silicon nitride. The analysis results revealed that the enhancement phenomenon of minority carrier lifetime was caused by the abrupt increase in the density of negative fixed charge (from 7.2 × 10 11 to 1.2 × 10 12 cm −2 ) after light soaking.

First-principles study on silicon atom doped monolayer graphene

Science.gov (United States)

Rafique, Muhammad; Shuai, Yong; Hussain, Nayyar

2018-01-01

This paper illustrates the structural, electronic and optical properties of individual silicon (Si) atom-doped single layer graphene using density functional theory method. Si atom forms tight bonding with graphene layer. The effect of doping has been investigated by varying the concentration of Si atoms from 3.125% to 9.37% (i.e. From one to three Si atoms in 4 × 4 pure graphene supercell containing 32 carbon atoms), respectively. Electronic structure, partial density of states (PDOS) and optical properties of pure and Si atom-doped graphene sheet were calculated using VASP (Vienna ab-initio Simulation Package). The calculated results for pure graphene sheet were then compared with Si atom doped graphene. It is revealed that upon Si doping in graphene, a finite band gap appears at the high symmetric K-point, thereby making graphene a direct band gap semiconductor. Moreover, the band gap value is directly proportional to the concentration of impurity Si atoms present in graphene lattice. Upon analyzing the optical properties of Si atom-doped graphene structures, it is found that, there is significant change in the refractive index of the graphene after Si atom substitution in graphene. In addition, the overall absorption spectrum of graphene is decreased after Si atom doping. Although a significant red shift in absorption is found to occur towards visible range of radiation when Si atom is substituted in its lattice. The reflectivity of graphene improves in low energy region after Si atom substitution in graphene. These results can be useful for tuning the electronic structure and to manipulate the optical properties of graphene layer in the visible region.

Evaluation of Uncertainties in the Determination of Phosphorus by RNAA

International Nuclear Information System (INIS)

Rick L. Paul

2000-01-01

A radiochemical neutron activation analysis (RNAA) procedure for the determination of phosphorus in metals and other materials has been developed and critically evaluated. Uncertainties evaluated as type A include those arising from measurement replication, yield determination, neutron self-shielding, irradiation geometry, measurement of the quantity for concentration normalization (sample mass, area, etc.), and analysis of standards. Uncertainties evaluated as type B include those arising from beta contamination corrections, beta decay curve fitting, and beta self-absorption corrections. The evaluation of uncertainties in the determination of phosphorus is illustrated for three different materials in Table I. The metal standard reference materials (SRMs) 2175 and 861 were analyzed for value assignment of phosphorus; implanted silicon was analyzed to evaluate the technique for certification of phosphorus. The most significant difference in the error evaluation of the three materials lies in the type B uncertainties. The relatively uncomplicated matrix of the high-purity silicon allows virtually complete purification of phosphorus from other beta emitters; hence, minimal contamination correction is needed. Furthermore, because the chemistry is less rigorous, the carrier yield is more reproducible, and self-absorption corrections are less significant. Improvements in the chemical purification procedures for phosphorus in complex matrices will decrease the type B uncertainties for all samples. Uncertainties in the determination of carrier yield, the most significant type A error in the analysis of the silicon, also need to be evaluated more rigorously and minimized in the future

Quantitative analysis of phosphosilicate glass films on silicon wafers for calibration of x-ray fluorescence spectrometry standards

International Nuclear Information System (INIS)

Weissman, S.H.

1983-01-01

The phosphorus and silicon contents of phosphosilicate glass films deposited by chemical vapor deposition (CVD) on silicon wafers were determined. These films were prepared for use as x-ray fluorescence (XRF) spectrometry standards. The thin films were removed from the wafer by etching with dilute hydrofluoric acid, and the P and Si concentrations in solution were determined by inductively coupled plasma atomic emission spectroscopy (ICP). The calculated phosphorus concentration ranged from 2.2 to 12 wt %, with an uncertainty of 2.73 to 10.1 relative percent. Variation between the calculated weight loss (summation of P 2 O 5 and SiO 2 amounts as determined by ICP) and the measured weight loss (determined gravimetrically) averaged 4.9%. Results from the ICP method, Fourier transform-infrared spectroscopy (FT-IR), dispersive infrared spectroscopy, electron microprobe, and x-ray fluorescence spectroscopy for the same samples are compared

X-ray photoelectron spectroscopy study of the functionalization of carbon metal-containing nanotubes with phosphorus atoms

International Nuclear Information System (INIS)

Shabanova, I.N.; Terebova, N.S.

2013-01-01

Highlights: •Carbon metal-containing nanotubes (Me–Cu, Ni, Fe) were functionalized with chemical groups containing different concentrations of phosphorous. •The C1s and Me3s spectra were measured by the X-ray photoelectron spectroscopy method. •The values of the atomic magnetic moment of the carbon metal-containing nanotubes were determined. -- Abstract: In the present paper, carbon metal-containing (Me: Cu, Ni, Fe) nanotubes functionalized with phosphorus atoms (ammonium polyphosphate) were studied by X-ray photoelectron spectroscopy (XPS) on an X-ray electron magnetic spectrometer. It is found that the functionalization leads to the change of the metal atomic magnetic moment, i.e. the value of the atomic magnetic moment in the functionalized carbon metal-containing (Cu, Ni, Fe) nanotubes increases and is higher than that in pristine nanotubes. It is shown that the covalent bond of Me and P atoms is formed. This leads to an increase in the activity of the nanostructure surface which is necessary for the modification of materials

Crystalline Silicon Solar Cells with Thin Silicon Passivation Film Deposited prior to Phosphorous Diffusion

Directory of Open Access Journals (Sweden)

Ching-Tao Li

2014-01-01

Full Text Available We demonstrate the performance improvement of p-type single-crystalline silicon (sc-Si solar cells resulting from front surface passivation by a thin amorphous silicon (a-Si film deposited prior to phosphorus diffusion. The conversion efficiency was improved for the sample with an a-Si film of ~5 nm thickness deposited on the front surface prior to high-temperature phosphorus diffusion, with respect to the samples with an a-Si film deposited on the front surface after phosphorus diffusion. The improvement in conversion efficiency is 0.4% absolute with respect to a-Si film passivated cells, that is, the cells with an a-Si film deposited on the front surface after phosphorus diffusion. The new technique provided a 0.5% improvement in conversion efficiency compared to the cells without a-Si passivation. Such performance improvements result from reduced surface recombination as well as lowered contact resistance, the latter of which induces a high fill factor of the solar cell.

Dispersion interactions between neighboring Bi atoms in (BiH3 )2 and Te(BiR2 )2.

Science.gov (United States)

Haack, Rebekka; Schulz, Stephan; Jansen, Georg

2018-03-13

Triggered by the observation of a short Bi⋯Bi distance and a BiTeBi bond angle of only 86.6° in the crystal structure of bis(diethylbismuthanyl)tellurane quantum chemical computations on interactions between neighboring Bi atoms in Te(BiR 2 ) 2 molecules (R = H, Me, Et) and in (BiH 3 ) 2 were undertaken. Bi⋯Bi distances atoms were found to significantly shorten upon inclusion of the d shells of the heavy metal atoms into the electron correlation treatment, and it was confirmed that interaction energies from spin component-scaled second-order Møller-Plesset theory (SCS-MP2) agree well with coupled-cluster singles and doubles theory including perturbative triples (CCSD(T)). Density functional theory-based symmetry-adapted perturbation theory (DFT-SAPT) was used to study the anisotropy of the interplay of dispersion attraction and steric repulsion between the Bi atoms. Finally, geometries and relative stabilities of syn-syn and syn-anti conformers of Te(BiR 2 ) 2 (R = H, Me, Et) and interconversion barriers between them were computed. © 2018 Wiley Periodicals, Inc. © 2018 Wiley Periodicals, Inc.

Novel Cyclosilazane-Type Silicon Precursor and Two-Step Plasma for Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride.

Science.gov (United States)

Park, Jae-Min; Jang, Se Jin; Lee, Sang-Ick; Lee, Won-Jun

2018-03-14

We designed cyclosilazane-type silicon precursors and proposed a three-step plasma-enhanced atomic layer deposition (PEALD) process to prepare silicon nitride films with high quality and excellent step coverage. The cyclosilazane-type precursor, 1,3-di-isopropylamino-2,4-dimethylcyclosilazane (CSN-2), has a closed ring structure for good thermal stability and high reactivity. CSN-2 showed thermal stability up to 450 °C and a sufficient vapor pressure of 4 Torr at 60 °C. The energy for the chemisorption of CSN-2 on the undercoordinated silicon nitride surface as calculated by density functional theory method was -7.38 eV. The PEALD process window was between 200 and 500 °C, with a growth rate of 0.43 Å/cycle. The best film quality was obtained at 500 °C, with hydrogen impurity of ∼7 atom %, oxygen impurity less than 2 atom %, low wet etching rate, and excellent step coverage of ∼95%. At 300 °C and lower temperatures, the wet etching rate was high especially at the lower sidewall of the trench pattern. We introduced the three-step PEALD process to improve the film quality and the step coverage on the lower sidewall. The sequence of the three-step PEALD process consists of the CSN-2 feeding step, the NH 3 /N 2 plasma step, and the N 2 plasma step. The H radicals in NH 3 /N 2 plasma efficiently remove the ligands from the precursor, and the N 2 plasma after the NH 3 plasma removes the surface hydrogen atoms to activate the adsorption of the precursor. The films deposited at 300 °C using the novel precursor and the three-step PEALD process showed a significantly improved step coverage of ∼95% and an excellent wet etching resistance at the lower sidewall, which is only twice as high as that of the blanket film prepared by low-pressure chemical vapor deposition.

Semiconductor Grade, Solar Silicon Purification Project. [photovoltaic solar energy conversion

Science.gov (United States)

Ingle, W. M.; Rosler, R. S.; Thompson, S. W.; Chaney, R. E.

1979-01-01

A low cost by-product, SiF4, is reacted with mg silicon to form SiF2 gas which is polymerized. The (SiF2)x polymer is heated forming volatile SixFy homologues which disproportionate on a silicon particle bed forming silicon and SiF4. The silicon analysis procedure relied heavily on mass spectroscopic and emission spectroscopic analysis. These analyses demonstrated that major purification had occured and some samples were indistinguishable from semiconductor grade silicon (except possibly for phosphorus). However, electrical analysis via crystal growth reveal that the product contains compensated phosphorus and boron.

Local photoconductivity of microcrystalline silicon thin films measured by conductive atomic force microscopy

Czech Academy of Sciences Publication Activity Database

Ledinský, Martin; Fejfar, Antonín; Vetushka, Aliaksi; Stuchlík, Jiří; Rezek, Bohuslav; Kočka, Jan

2011-01-01

Roč. 5, 10-11 (2011), s. 373-375 ISSN 1862-6254 R&D Projects: GA MŠk(CZ) LC06040; GA MŠk(CZ) MEB061012; GA AV ČR KAN400100701; GA MŠk LC510 EU Projects: European Commission(XE) 240826 - PolySiMode Institutional research plan: CEZ:AV0Z10100521 Keywords : amorphous silicon * nanocrystalline silicon * thin films * atomic force microscopy * photoconductivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.218, year: 2011

Miniature silicon photodiodes for photon and electron radiation dosimetry in therapeutical applications

International Nuclear Information System (INIS)

Gilar, O.; Petr, I.

1986-01-01

The silicon diode is manufactured from P type silicon, the P layer is implanted with boron atoms and the N layer with phosphorus atoms. The diode dimensions are 2x2x0.2 mm. It is encased in elastic tissue-equivalent material. The electrodes are from an Al foil. The diode can be used as an in-vivo dosemeter in human body cavities. When irradiated, it supplies information on the instantaneous dose rate at a given point and on the dose cumulated over a certain time. Its current response to gamma radiation kerma rate is linear, directional sensitivity is isotropic. Temperature sensitivity of the photodiode is shown graphically for the range 20 to 40 degC, and the depth dose distribution measured in a water phantom is given for 6, 12 and 20 MeV photons and electrons. The diode energy dependence shows increased sensitivity to low-energy photons. (M.D.)

Synthesis and investigation of the structure and chemical properties of acyclic compounds of bicoordinated phosphorus with a phosphorus-carbon (p-p)/sub π/ bond

International Nuclear Information System (INIS)

Markovskii, L.N.; Romanenko, V.D.

1987-01-01

Five types of reactions of phosphoalkenes can be distinguished according to the nature of the change in the coordination number and valence of the phosphorus atom in the course of chemical conversions. There are: reactions of cyclodimerization, cycloaddition, and 1,2-addition at the P-C double bond; formation of compounds of tricoordinated pentavalent phosphorus; formation of tetracoordinated phosphorus compounds; reactions of functionalization occurring without a change in the valence and coordination number of the phosphorus atom; and reactions of 1,2-elimination, leading to compounds of monocoordinated phosphorus. This paper reviews each of these reactions in detail, using double-resonance hydrogen 1 and phosphorus 31 NMR spectra and analyzing the acquired chemical shift and spin-spin coupling constants, and also demonstrates the complexation of phosphorus with several metals

Designing high performance precursors for atomic layer deposition of silicon oxide

Energy Technology Data Exchange (ETDEWEB)

Mallikarjunan, Anupama, E-mail: mallika@airproducts.com; Chandra, Haripin; Xiao, Manchao; Lei, Xinjian; Pearlstein, Ronald M.; Bowen, Heather R.; O' Neill, Mark L. [Air Products and Chemicals, Inc., 1969 Palomar Oaks Way, Carlsbad, California 92011 (United States); Derecskei-Kovacs, Agnes [Air Products and Chemicals, Inc., 7201 Hamilton Blvd., Allentown, Pennsylvania 18195 (United States); Han, Bing [Air Products and Chemicals, Inc., 2 Dongsanhuan North Road, Chaoyang District, Beijing 100027 (China)

2015-01-15

Conformal and continuous silicon oxide films produced by atomic layer deposition (ALD) are enabling novel processing schemes and integrated device structures. The increasing drive toward lower temperature processing requires new precursors with even higher reactivity. The aminosilane family of precursors has advantages due to their reactive nature and relative ease of use. In this paper, the authors present the experimental results that reveal the uniqueness of the monoaminosilane structure [(R{sub 2}N)SiH{sub 3}] in providing ultralow temperature silicon oxide depositions. Disubstituted aminosilanes with primary amines such as in bis(t-butylamino)silane and with secondary amines such as in bis(diethylamino)silane were compared with a representative monoaminosilane: di-sec-butylaminosilane (DSBAS). DSBAS showed the highest growth per cycle in both thermal and plasma enhanced ALD. These findings show the importance of the arrangement of the precursor's organic groups in an ALD silicon oxide process.

Investigation of artifacts caused by deuterium background correction in the determination of phosphorus by electrothermal atomization using high-resolution continuum source atomic absorption spectrometry

International Nuclear Information System (INIS)

Dessuy, Morgana B.; Vale, Maria Goreti R.; Lepri, Fabio G.; Borges, Daniel L.G.; Welz, Bernhard; Silva, Marcia M.; Heitmann, Uwe

2008-01-01

The artifacts created in the measurement of phosphorus at the 213.6-nm non-resonance line by electrothermal atomic absorption spectrometry using line source atomic absorption spectrometry (LS AAS) and deuterium lamp background correction (D 2 BC) have been investigated using high-resolution continuum source atomic absorption spectrometry (HR-CS AAS). The absorbance signals and the analytical curves obtained by LS AAS without and with D 2 BC, and with HR-CS AAS without and with automatic correction for continuous background absorption, and also with least-squares background correction for molecular absorption with rotational fine structure were compared. The molecular absorption due to the suboxide PO that exhibits pronounced fine structure could not be corrected by the D 2 BC system, causing significant overcorrection. Among the investigated chemical modifiers, NaF, La, Pd and Pd + Ca, the Pd modifier resulted in the best agreement of the results obtained with LS AAS and HR-CS AAS. However, a 15% to 100% higher sensitivity, expressed as slope of the analytical curve, was obtained for LS AAS compared to HR-CS AAS, depending on the modifier. Although no final proof could be found, the most likely explanation is that this artifact is caused by a yet unidentified phosphorus species that causes a spectrally continuous absorption, which is corrected without problems by HR-CS AAS, but which is not recognized and corrected by the D 2 BC system of LS AAS

Implementation of atomic layer etching of silicon: Scaling parameters, feasibility, and profile control

Energy Technology Data Exchange (ETDEWEB)

Ranjan, Alok, E-mail: alok.ranjan@us.tel.com; Wang, Mingmei; Sherpa, Sonam D.; Rastogi, Vinayak [TEL Technology Center, America LLC, 255 Fuller Road, Suite 214, Albany, New York 12203 (United States); Koshiishi, Akira [Tokyo Electron Miyagi, Ltd., 1 Techno-Hills, Taiwa-cho, Kurokawa-gun, Miyagi, 9813629 (Japan); Ventzek, Peter L. G. [Tokyo Electron America, Inc., 2400 Grove Blvd., Austin, Texas 78741 (United States)

2016-05-15

Atomic or layer by layer etching of silicon exploits temporally segregated self-limiting adsorption and material removal steps to mitigate the problems associated with continuous or quasicontinuous (pulsed) plasma processes: selectivity loss, damage, and profile control. Successful implementation of atomic layer etching requires careful choice of the plasma parameters for adsorption and desorption steps. This paper illustrates how process parameters can be arrived at through basic scaling exercises, modeling and simulation, and fundamental experimental tests of their predictions. Using chlorine and argon plasma in a radial line slot antenna plasma source as a platform, the authors illustrate how cycle time, ion energy, and radical to ion ratio can be manipulated to manage the deviation from ideality when cycle times are shortened or purges are incomplete. Cell based Monte Carlo feature scale modeling is used to illustrate profile outcomes. Experimental results of atomic layer etching processes are illustrated on silicon line and space structures such that iso-dense bias and aspect ratio dependent free profiles are produced. Experimental results also illustrate the profile control margin as processes move from atomic layer to multilayer by layer etching. The consequence of not controlling contamination (e.g., oxygen) is shown to result in deposition and roughness generation.

The atomic and electronic structure of amorphous silicon nitride

International Nuclear Information System (INIS)

Alvarez, F.; Valladares, A.A.

2002-01-01

Using a novel approach to the ab initio generation of random networks we constructed two nearly stoichiometric samples of amorphous silicon nitride with the same content x= 1.29. The two 64-atom periodically-continued cubic diamond-like cells contain 28 silicons and 36 nitrogens randomly substituted, and were amorphized with a 6 f s time step by heating them to just below their melting temperature with a Harris-functional based, molecular dynamics code in the LDA approximation. The averaged total radial distribution function (RDF) obtained is compared with some existing Tersoff-like potential simulations and with experiment; ours agree with experiment. All the partial radial features are calculated and the composition of the second peak also agrees with experiment. The electronic structure is calculated and the optical gaps obtained using both a HOMO-LUMO approach and the Tauc-like procedure developed recently that gives reasonable gaps. (Author)

Determinations of silicon and phosphorus in rice planted on a district of high incidence of amyotrophic lateral sclerosis by neutron activation and X-ray fluorescence analyses

Energy Technology Data Exchange (ETDEWEB)

Mizumoto, Yoshihiko; Ishikawa, Teruumi; Kusakabe, Toshio; Katsurayama, Kousuke (Kinki Univ., Higashi-Osaka, Osaka (Japan)); Iwata, Shiro

1989-12-01

Silicon and phosphorus contents in polished and unpolished rice planted on a district of high incidence of amyotrophic lateral sclerosis (ALS) have been determined by neutron activation and X-ray fluorescence methods, and compared with those from control areas. In the neutron activation analysis, {beta}-ray spectra of {sup 32}P produced by the {sup 31}P(n, {gamma}){sup 32}P reaction on polished and unpolished rice were measured with a low background {beta}-ray spectrometer. In the X-ray fluorescence analysis, characteristic X-ray were analyzed with a wavelength dispersive X-ray fluorescence spectrometer. Silicon contents in polished and unpolished rice from the ALS area are 42 {mu}g.g{sup -1} and 370 {mu}g.g{sup -1}, respectively, and the corresponding phosphorus contents are 1210 {mu}g.g{sup -1}, and 3370 {mu}g.g{sup -1}, respectively. The data for ALS area are equal to those for the control area within atandard deviation. (author).

Determinations of silicon and phosphorus in rice planted on a district of high incidence of amyotrophic lateral sclerosis by neutron activation and X-ray fluorescence analyses

International Nuclear Information System (INIS)

Mizumoto, Yoshihiko; Ishikawa, Teruumi; Kusakabe, Toshio; Katsurayama, Kousuke; Iwata, Shiro.

1989-01-01

Silicon and phosphorus contents in polished and unpolished rice planted on a district of high incidence of amyotrophic lateral sclerosis (ALS) have been determined by neutron activation and X-ray fluorescence methods, and compared with those from control areas. In the neutron activation analysis, β-ray spectra of 32 P produced by the 31 P(n, γ) 32 P reaction on polished and unpolished rice were measured with a low background β-ray spectrometer. In the X-ray fluorescence analysis, characteristic X-ray were analyzed with a wavelength dispersive X-ray fluorescence spectrometer. Silicon contents in polished and unpolished rice from the ALS area are 42 μg.g -1 and 370 μg.g -1 , respectively, and the corresponding phosphorus contents are 1210 μg.g -1 , and 3370 μg.g -1 , respectively. The data for ALS area are equal to those for the control area within atandard deviation. (author)

Wet-chemical passivation of atomically flat and structured silicon substrates for solar cell application

Science.gov (United States)

Angermann, H.; Rappich, J.; Korte, L.; Sieber, I.; Conrad, E.; Schmidt, M.; Hübener, K.; Polte, J.; Hauschild, J.

2008-04-01

Special sequences of wet-chemical oxidation and etching steps were optimised with respect to the etching behaviour of differently oriented silicon to prepare very smooth silicon interfaces with excellent electronic properties on mono- and poly-crystalline substrates. Surface photovoltage (SPV) and photoluminescence (PL) measurements, atomic force microscopy (AFM) and scanning electron microscopy (SEM) investigations were utilised to develop wet-chemical smoothing procedures for atomically flat and structured surfaces, respectively. Hydrogen-termination as well as passivation by wet-chemical oxides were used to inhibit surface contamination and native oxidation during the technological processing. Compared to conventional pre-treatments, significantly lower micro-roughness and densities of surface states were achieved on mono-crystalline Si(100), on evenly distributed atomic steps, such as on vicinal Si(111), on silicon wafers with randomly distributed upside pyramids, and on poly-crystalline EFG ( Edge-defined Film-fed- Growth) silicon substrates. The recombination loss at a-Si:H/c-Si interfaces prepared on c-Si substrates with randomly distributed upside pyramids was markedly reduced by an optimised wet-chemical smoothing procedure, as determined by PL measurements. For amorphous-crystalline hetero-junction solar cells (ZnO/a-Si:H(n)/c-Si(p)/Al) with textured c-Si substrates the smoothening procedure results in a significant increase of short circuit current Isc, fill factor and efficiency η. The scatter in the cell parameters for measurements on different cells is much narrower, as compared to conventional pre-treatments, indicating more well-defined and reproducible surface conditions prior to a-Si:H emitter deposition and/or a higher stability of the c-Si surface against variations in the a-Si:H deposition conditions.

Phosphorus oxide gate dielectric for black phosphorus field effect transistors

Science.gov (United States)

Dickerson, W.; Tayari, V.; Fakih, I.; Korinek, A.; Caporali, M.; Serrano-Ruiz, M.; Peruzzini, M.; Heun, S.; Botton, G. A.; Szkopek, T.

2018-04-01

The environmental stability of the layered semiconductor black phosphorus (bP) remains a challenge. Passivation of the bP surface with phosphorus oxide, POx, grown by a reactive ion etch with oxygen plasma is known to improve photoluminescence efficiency of exfoliated bP flakes. We apply phosphorus oxide passivation in the fabrication of bP field effect transistors using a gate stack consisting of a POx layer grown by reactive ion etching followed by atomic layer deposition of Al2O3. We observe room temperature top-gate mobilities of 115 cm2 V-1 s-1 in ambient conditions, which we attribute to the low defect density of the bP/POx interface.

Inverse-model estimates of the ocean's coupled phosphorus, silicon, and iron cycles

Science.gov (United States)

Pasquier, Benoît; Holzer, Mark

2017-09-01

The ocean's nutrient cycles are important for the carbon balance of the climate system and for shaping the ocean's distribution of dissolved elements. Dissolved iron (dFe) is a key limiting micronutrient, but iron scavenging is observationally poorly constrained, leading to large uncertainties in the external sources of iron and hence in the state of the marine iron cycle. Here we build a steady-state model of the ocean's coupled phosphorus, silicon, and iron cycles embedded in a data-assimilated steady-state global ocean circulation. The model includes the redissolution of scavenged iron, parameterization of subgrid topography, and small, large, and diatom phytoplankton functional classes. Phytoplankton concentrations are implicitly represented in the parameterization of biological nutrient utilization through an equilibrium logistic model. Our formulation thus has only three coupled nutrient tracers, the three-dimensional distributions of which are found using a Newton solver. The very efficient numerics allow us to use the model in inverse mode to objectively constrain many biogeochemical parameters by minimizing the mismatch between modeled and observed nutrient and phytoplankton concentrations. Iron source and sink parameters cannot jointly be optimized because of local compensation between regeneration, recycling, and scavenging. We therefore consider a family of possible state estimates corresponding to a wide range of external iron source strengths. All state estimates have a similar mismatch with the observed nutrient concentrations and very similar large-scale dFe distributions. However, the relative contributions of aeolian, sedimentary, and hydrothermal iron to the total dFe concentration differ widely depending on the sources. Both the magnitude and pattern of the phosphorus and opal exports are well constrained, with global values of 8. 1 ± 0. 3 Tmol P yr-1 (or, in carbon units, 10. 3 ± 0. 4 Pg C yr-1) and 171. ± 3. Tmol Si yr-1. We diagnose the

Iridium-coated micropore x-ray optics using dry etching of a silicon wafer and atomic layer deposition.

Science.gov (United States)

Ogawa, Tomohiro; Ezoe, Yuichiro; Moriyama, Teppei; Mitsuishi, Ikuyuki; Kakiuchi, Takuya; Ohashi, Takaya; Mitsuda, Kazuhisa; Putkonen, Matti

2013-08-20

To enhance x-ray reflectivity of silicon micropore optics using dry etching of silicon (111) wafers, iridium coating is tested by use of atomic layer deposition. An iridium layer is successfully formed on sidewalls of tiny micropores with a pore width of 20 μm and depth of 300 μm. The film thickness is ∼20  nm. An enhanced x-ray reflectivity compared to that of silicon is confirmed at Ti Kα 4.51 keV, for what we believe to be the first time, with this type of optics. Some discrepancies from a theoretical reflectivity curve of iridium-coated silicon are noticed at small incident angles <1.3°. When a geometrical shadowing effect due to occultation by a ridge existing on the sidewalls is taken into account, the observed reflectivity becomes well represented by the modified theoretical curve. An estimated surface micro roughness of ∼1  nm rms is consistent with atomic force microscope measurements of the sidewalls.

Phosphorus K4 Crystal: A New Stable Allotrope

OpenAIRE

Jie Liu; Shunhong Zhang; Yaguang Guo; Qian Wang

2016-01-01

The intriguing properties of phosphorene motivate scientists to further explore the structures and properties of phosphorus materials. Here, we report a new allotrope named K 4 phosphorus composed of three-coordinated phosphorus atoms in non-layered structure which is not only dynamically and mechanically stable, but also possesses thermal stability comparable to that of the orthorhombic black phosphorus (A17). Due to its unique configuration, K 4 phosphorus exhibits exceptional properties: i...

Electrically-inactive phosphorus re-distribution during low temperature annealing

Science.gov (United States)

Peral, Ana; Youssef, Amanda; Dastgheib-Shirazi, Amir; Akey, Austin; Peters, Ian Marius; Hahn, Giso; Buonassisi, Tonio; del Cañizo, Carlos

2018-04-01

An increased total dose of phosphorus (P dose) in the first 40 nm of a phosphorus diffused emitter has been measured after Low Temperature Annealing (LTA) at 700 °C using the Glow Discharge Optical Emission Spectrometry technique. This evidence has been observed in three versions of the same emitter containing different amounts of initial phosphorus. A stepwise chemical etching of a diffused phosphorus emitter has been carried out to prepare the three types of samples. The total P dose in the first 40 nm increases during annealing by 1.4 × 1015 cm-2 for the sample with the highly doped emitter, by 0.8 × 1015 cm-2 in the middle-doped emitter, and by 0.5 × 1015 cm-2 in the lowest-doped emitter. The presence of surface dislocations in the first few nanometers of the phosphorus emitter might play a role as preferential sites of local phosphorus gettering in phosphorus re-distribution, because the phosphorus gettering to the first 40 nm is lower when this region is etched stepwise. This total increase in phosphorus takes place even though the calculated electrically active phosphorus concentration shows a reduction, and the measured sheet resistance shows an increase after annealing at a low temperature. The reduced electrically active P dose is around 0.6 × 1015 cm-2 for all the emitters. This can be explained with phosphorus-atoms diffusing towards the surface during annealing, occupying electrically inactive configurations. An atomic-scale visual local analysis is carried out with needle-shaped samples of tens of nm in diameter containing a region of the highly doped emitter before and after LTA using Atom Probe Tomography, showing phosphorus precipitates of 10 nm and less before annealing and an increased density of larger precipitates after annealing (25 nm and less).

Polycrystalline silicon semiconducting material by nuclear transmutation doping

Science.gov (United States)

Cleland, John W.; Westbrook, Russell D.; Wood, Richard F.; Young, Rosa T.

1978-01-01

A NTD semiconductor material comprising polycrystalline silicon having a mean grain size less than 1000 microns and containing phosphorus dispersed uniformly throughout the silicon rather than at the grain boundaries.

Thermal processing of strained silicon-on-insulator for atomically precise silicon device fabrication

International Nuclear Information System (INIS)

Lee, W.C.T.; Bishop, N.; Thompson, D.L.; Xue, K.; Scappucci, G.; Cederberg, J.G.; Gray, J.K.; Han, S.M.; Celler, G.K.; Carroll, M.S.; Simmons, M.Y.

2013-01-01

Highlights: ► Strained silicon-on-insulator (sSOI) samples were flash-annealed at high temperature under ultra-high vacuum conditions. ► The extend of surface strain relaxation depends on the annealing temperature with no strain relaxation observed below 1020 °C. ► A 2 × 1 reconstructed surface with low defect density can be achieved. ► The annealed sSOI surface shows enhanced step undulations due to the unique energetics caused by surface strain. - Abstract: We investigate the ability to reconstruct strained silicon-on-insulator (sSOI) substrates in ultra-high vacuum for use in atomic scale device fabrication. Characterisation of the starting sSOI substrate using μRaman shows an average tensile strain of 0.8%, with clear strain modulation in a crosshatch pattern across the surface. The surfaces were heated in ultra-high vacuum from temperatures of 900 °C to 1100 °C and subsequently imaged using scanning tunnelling microscopy (STM). The initial strain modulation on the surface is observed to promote silicon migration and the formation of crosshatched surface features whose height and pitch increases with increasing annealing temperature. STM images reveal alternating narrow straight S A steps and triangular wavy S B steps attributed to the spontaneous faceting of S B and preferential adatom attachment on S B under biaxial tensile strain. Raman spectroscopy shows that despite these high temperature anneals no strain relaxation of the substrate is observed up to temperatures of 1020 °C. Above 1100 °C, strain relaxation is evident but is confined to the surface.

Silicon etch process

International Nuclear Information System (INIS)

Day, D.J.; White, J.C.

1984-01-01

A silicon etch process wherein an area of silicon crystal surface is passivated by radiation damage and non-planar structure produced by subsequent anisotropic etching. The surface may be passivated by exposure to an energetic particle flux - for example an ion beam from an arsenic, boron, phosphorus, silicon or hydrogen source, or an electron beam. Radiation damage may be used for pattern definition and/or as an etch stop. Ethylenediamine pyrocatechol or aqueous potassium hydroxide anisotropic etchants may be used. The radiation damage may be removed after etching by thermal annealing. (author)

Phosphorus-containing macrocyclic compounds: synthesis and properties

International Nuclear Information System (INIS)

Knyazeva, I R; Burilov, Alexander R; Pudovik, Michael A; Habicher, Wolf D

2013-01-01

Main trends in the development of methods for the synthesis of phosphorus-containing macrocyclic compounds in the past 15 years are considered. Emphasis is given to reactions producing macrocyclic structures with the participation of a phosphorus atom and other functional groups involved in organophosphorus molecules and to modifications of macrocycles by phosphorus compounds in different valence states. Possibilities of the practical application of phosphorus-containing macrocyclic compounds in difference areas of science and engineering are discussed. The bibliography includes 205 references.

Scanning tunnelling microscope fabrication of phosphorus array in silicon for a nuclear spin quantum computer

International Nuclear Information System (INIS)

O'Brien, J.L.; Schofield, S.R.; Simmons, M.Y.; Clark, R.G.; Dzurak, A.S.; Prawer, S.; Adrienko, I.; Cimino, A.

2000-01-01

Full text: In the vigorous worldwide effort to experimentally build a quantum computer, recent intense interest has focussed on solid state approaches for their promise of scalability. Particular attention has been given to silicon-based proposals that can readily be integrated into conventional computing technology. For example the Kane design uses the well isolated nuclear spin of phosphorous donor nuclei (I=1/2) as the qubits embedded in isotopically pure 28 Si (I=0). We demonstrate the ability to fabricate a precise array of P atoms on a clean Si surface with atomic-scale resolution compatible with the fabrication of the Kane quantum computer

Fabrication of amorphous silicon nanoribbons by atomic force microscope tip-induced local oxidation for thin film device applications

International Nuclear Information System (INIS)

Pichon, L; Rogel, R; Demami, F

2010-01-01

We demonstrate the feasibility of induced local oxidation of amorphous silicon by atomic force microscopy. The resulting local oxide is used as a mask for the elaboration of a thin film silicon resistor. A thin amorphous silicon layer deposited on a glass substrate is locally oxidized following narrow continuous lines. The corresponding oxide line is then used as a mask during plasma etching of the amorphous layer leading to the formation of a nanoribbon. Such an amorphous silicon nanoribbon is used for the fabrication of the resistor

The effect of molybdenum on the grain boundary segregation of phosphorus in steel

International Nuclear Information System (INIS)

Moller, R.; Brenner, S.S.; Grabke, A.J.

1986-01-01

The beneficial effect of molybdenum on the temper embrittlement of steels is well known but has not yet been satisfactorily explained. Yu and McMahon suggested a strong interaction between molybdenum and phosphorus to form Mo-P clusters which decrease the concentration of phosphorus in the matrix and consequently the amount segregated to grain boundaries. Such clusters have as yet not been observed but this may have been owing to the insufficient resolution of conventional analytical methods. However, since no scavenging of phosphorus was observed in carbon-free Fe-Mo-P alloys, i.e. Mo alone did not affect the grain boundary concentration of phosphorus, it is improbable that the Mo-P cluster formation mechanisms can be operative. Instead, it is more likely that a requisite for the scavenging of phosphorus is the formation of Mo carbides in the steel. This work was undertaken to determine the distribution of phosphorus in two similar Fe-Mo-P alloys, one of which contained carbon while the other was carbon-free. The emphasis of the study was to determine the interaction of phosphorus with molybdenum and molybdenum carbides in the steel. Field-ion microscopy combined with atom probe microanalysis was used for this purpose. The atom-by-atom sampling method and the near-atomic spatial resolution of the FIM/atom probe make this instrument ideally suited for this type of investigations

Investigation of the Temperature Dependence of the Acceptor Center Relaxation Rate in Silicon by the mu^-SR-Method

CERN Document Server

Mamedov, T N; Stojkov, A V; Andrianov, D G; Gerlach, D; Zimmermann, U; Gorelkin, V N; Kormann, O; Major, J V; Shevchik, M

2000-01-01

Results on the temperature dependence of the residual polarization of negative muons in silicon with phosphorus (3.2 cdot 10^12, 2.3 cdot 10^15 and 4.5 cdot 10^18 cm^-3) and aluminium (2 cdot 10^14 and 2.4 cdot 10^18 cm^-3) impurities are presented. The measurements were carried out in a transverse to the direction of the muon spin magnetic field of 2000 Oe in the temperature range 4.2-300 K. The temperature dependence of the relaxation rate of the magnetic moment of the Al shallow acceptor centre in undeformed silicon is determined for the first time. The constant of the hyperfine interaction between the magnetic moment of the muon and that of the electron shell of the muonic atom A_hf/2pi approx 3 cdot 10^7 s^-1) and the coefficient for capture of free electrons by a neutral aluminium atom in silicon (beta (Al^0) approx 7 cdot 10^-14 cm^3 s^-1 at 30 K) are estimated.

Phosphorus atomic layer doping in SiGe using reduced pressure chemical vapor deposition

International Nuclear Information System (INIS)

Yamamoto, Yuji; Heinemann, Bernd; Murota, Junichi; Tillack, Bernd

2014-01-01

Phosphorus (P) atomic layer doping in SiGe is investigated at temperatures between 100 °C to 600 °C using a single wafer reduced pressure chemical vapor deposition system. SiGe(100) surface is exposed to PH 3 at different PH 3 partial pressures by interrupting SiGe growth. The impact of the SiGe buffer/cap growth condition (total pressure/SiGe deposition precursors) on P adsorption, incorporation, and segregation are investigated. In the case of SiH 4 -GeH 4 -H 2 gas system, steeper P spikes due to lower segregation are observed by SiGe cap deposition at atmospheric (ATM) pressure compared with reduced pressure (RP). The steepness of P spike of ∼ 5.7 nm/dec is obtained for ATM pressure without reducing deposition temperature. This result may be due to the shift of equilibrium of P adsorption/desorption to desorption direction by higher H 2 pressure. Using Si 2 H 6 -GeH 4 -H 2 gas system for SiGe cap deposition in RP, lowering the SiGe growth temperature is possible, resulting in higher P incorporation and steeper P profile due to reduced desorption and segregation. In the case of Si 2 H 6 -GeH 4 -H 2 gas system, the P dose could be simulated assuming a Langmuir-type kinetics model. Incorporated P shows high electrical activity, indicating P is adsorbed mostly in lattice position. - Highlights: • Phosphorus (P) atomic layer doping in SiGe (100) is investigated using CVD. • P adsorption is suppressed by the hydrogen termination of Ge surface. • By SiGe cap deposition at atmospheric pressure, P segregation was suppressed. • By using Si 2 H 6 -based SiGe cap, P segregation was also suppressed. • The P adsorption process is self-limited and follows Langmuir-type kinetics model

Neutron activation determination of phosphorus and sulfur in semiconductor materials by 32P-isotope

International Nuclear Information System (INIS)

Nikolaev, A.V.; Gol'dshtejn, M.M.; Gil'bert, Eh.N.; Verevkin, G.V.; Yudelevich, I.G.

1977-01-01

A neutron-activation method has been developed for determining phosphorus and sulphur in germanium, gallium, gallium arsenide, and silicon structures using 32 P isotope. The dioctyl-sulphoxide (DOSO) extraction of phosphoric molybdenum acid (PMA) has been used to separate 32 P in a radiochemically pure form. Correction factors have been calculated due to the 2nd order interference on 30 Si nuclei in determining phosphorus in silicon for various irradiation times and at various cadmium proportions

Low atomic number coating for XEUS silicon pore optics

DEFF Research Database (Denmark)

Lumb, D.H.; Cooper-Jensen, Carsten P.; Krumrey, M.

2008-01-01

We describe a set of measurements on coated silicon substrates that are representative of the material to be used for the XEUS High Performance Pore Optics (HPO) technology. X-ray angular reflectance measurements at 2.8 and 8 keV, and energy scans of reflectance at a fixed angle representative...... of XEUS graze angles are presented. Reflectance is significantly enhanced for low energies when a low atomic number over-coating is applied. Modeling of the layer thicknesses and roughness is used to investigate the dependence on the layer thicknesses, metal and over coat material choices. We compare...

Determination of halogens, silicon, phosphorus, carbon, sulfur, tributyl phosphate and of free acid in uranyl nitrate solutions

International Nuclear Information System (INIS)

Chu Van Vinh

2003-01-01

High-purity uranium compounds are widely used in nuclear field in the form of uranyl nitrate or uranium oxides. In production of uranium material the estimation and the control of products quality is necessary and very important. Halogens was separated from uranium compounds by steam distillation and they were later determined by high performance liquid chromatography (HPLC) for Cl - , Br - , I - ions. Br - was also determined by spectrophotometric and iodide by the individual pulse polarography. Silicon and phosphorus in uranyl nitrate solutions were determined by the photometric method. Sulfur was determined as sulfate form by the measurement of turbidity by the titrimetry. TBP in kerosene and free acid in aqueous solution were determined by the titration. (author)

Arsenic implantation into polycrystalline silicon and diffusion to silicon substrate

International Nuclear Information System (INIS)

Tsukamoto, K.; Akasaka, Y.; Horie, K.

1977-01-01

Arsenic implantation into polycrystalline silicon and drive-in diffusion to silicon substrate have been investigated by MeV He + backscattering analysis and also by electrical measurements. The range distributions of arsenic implanted into polycrystalline silicon are well fitted to Gaussian distributions over the energy range 60--350 keV. The measured values of R/sub P/ and ΔR/sub P/ are about 10 and 20% larger than the theoretical predictions, respectively. The effective diffusion coefficient of arsenic implanted into polycrystalline silicon is expressed as D=0.63 exp[(-3.22 eV/kT)] and is independent of the arsenic concentration. The drive-in diffusion of arsenic from the implanted polycrystalline silicon layer into the silicon substrate is significantly affected by the diffusion atmosphere. In the N 2 atmosphere, a considerable amount of arsenic atoms diffuses outward to the ambient. The outdiffusion can be suppressed by encapsulation with Si 3 N 4 . In the oxidizing atmosphere, arsenic atoms are driven inward by growing SiO 2 due to the segregation between SiO 2 and polycrystalline silicon, and consequently the drive-in diffusion of arsenic is enhanced. At the interface between the polycrystalline silicon layer and the silicon substrate, arsenic atoms are likely to segregate at the polycrystalline silicon side

Influence of qubit displacements on quantum logic operations in a silicon-based quantum computer with constant interaction

International Nuclear Information System (INIS)

Kamenev, D. I.; Berman, G. P.; Tsifrinovich, V. I.

2006-01-01

The errors caused by qubit displacements from their prescribed locations in an ensemble of spin chains are estimated analytically and calculated numerically for a quantum computer based on phosphorus donors in silicon. We show that it is possible to polarize (initialize) the nuclear spins even with displaced qubits by using controlled-NOT gates between the electron and nuclear spins of the same phosphorus atom. However, a controlled-NOT gate between the displaced electron spins is implemented with large error because of the exponential dependence of exchange interaction constant on the distance between the qubits. If quantum computation is implemented on an ensemble of many spin chains, the errors can be small if the number of chains with displaced qubits is small

Upgraded metallurgical-grade silicon solar cells with efficiency above 20%

Energy Technology Data Exchange (ETDEWEB)

Zheng, P.; Rougieux, F. E.; Samundsett, C.; Yang, Xinbo; Wan, Yimao; Macdonald, D. [Research School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Terrritory 2601 (Australia); Degoulange, J.; Einhaus, R. [Apollon Solar, 66 Cours Charlemagne, Lyon 69002 (France); Rivat, P. [FerroPem, 517 Avenue de la Boisse, Chambery Cedex 73025 (France)

2016-03-21

We present solar cells fabricated with n-type Czochralski–silicon wafers grown with strongly compensated 100% upgraded metallurgical-grade feedstock, with efficiencies above 20%. The cells have a passivated boron-diffused front surface, and a rear locally phosphorus-diffused structure fabricated using an etch-back process. The local heavy phosphorus diffusion on the rear helps to maintain a high bulk lifetime in the substrates via phosphorus gettering, whilst also reducing recombination under the rear-side metal contacts. The independently measured results yield a peak efficiency of 20.9% for the best upgraded metallurgical-grade silicon cell and 21.9% for a control device made with electronic-grade float-zone silicon. The presence of boron-oxygen related defects in the cells is also investigated, and we confirm that these defects can be partially deactivated permanently by annealing under illumination.

neutron transmutation doping of silicon a thesis submitted to nuclear engineering department for the degree of master of science in nuclear engineering

International Nuclear Information System (INIS)

Abdel Gawwad, M.M.

2003-01-01

When silicon is irradiated by thermal neutrons the objective is to produce a number of phosphorus atoms in the target sample, in order to obtain a given resistivity after treatment. The resistivity of the sample is decreased by the transmutation of the silicon (by neutrons) to phosphorus. After the sample irradiation and decay, the radiochemical cleaning is used to clean the sample. the next step is the sample heat treatment to remove the damage caused by fast neutrons( E> 0.1 MeV). after that, the sample is cut int wafer and polished. The characterization must be carried. out to characterize the specifications of the final product. the present work aims to: find an optimization of the silicon doping processes:sample preparation, for irradiation by cleaning the sample before irradiation to avoid impurity activation. process, by calculating the fluence required to reach the required resistivity. Decay of irradiated sample, it takes four days at least to be handled. handling, it must be carefully to avoid the mechanical damage since the silicon is hard material. etching , to remove the defected layer from the sample . heat treatment , to release the damage caused during irradiation. characterization, to measure the final resistivity and the minority carrier life . hence, calculating the irradiation constant for ETRR-2

Structural, electronic, and vibrational properties of high-density amorphous silicon: a first-principles molecular-dynamics study.

Science.gov (United States)

Morishita, Tetsuya

2009-05-21

We report a first-principles study of the structural, electronic, and dynamical properties of high-density amorphous (HDA) silicon, which was found to be formed by pressurizing low-density amorphous (LDA) silicon (a normal amorphous Si) [T. Morishita, Phys. Rev. Lett. 93, 055503 (2004); P. F. McMillan, M. Wilson, D. Daisenberger, and D. Machon, Nature Mater. 4, 680 (2005)]. Striking structural differences between HDA and LDA are revealed. The LDA structure holds a tetrahedral network, while the HDA structure contains a highly distorted tetrahedral network. The fifth neighboring atom in HDA tends to be located at an interstitial position of a distorted tetrahedron composed of the first four neighboring atoms. Consequently, the coordination number of HDA is calculated to be approximately 5 unlike that of LDA. The electronic density of state (EDOS) shows that HDA is metallic, which is consistent with a recent experimental measurement of the electronic resistance of HDA Si. We find from local EDOS that highly distorted tetrahedral configurations enhance the metallic nature of HDA. The vibrational density of state (VDOS) also reflects the structural differences between HDA and LDA. Some of the characteristic vibrational modes of LDA are dematerialized in HDA, indicating the degradation of covalent bonds. The overall profile of the VDOS for HDA is found to be an intermediate between that for LDA and liquid Si under pressure (high-density liquid Si).

Local electronic and geometric structures of silicon atoms implanted in graphite

International Nuclear Information System (INIS)

Baba, Yuji; Sekiguchi, Tetsuhiro; Shimoyama, Iwao

2002-01-01

Low-energy Si + ions were implanted in highly oriented pyrolitic graphite (HOPG) up to 1% of surface atomic concentration, and the local electronic and geometric structures around the silicon atoms were in situ investigated by means of the Si K-edge X-ray absorption near-edge structure (XANES) and X-ray photoelectron spectroscopy using linearly polarized synchrotron radiation. The resonance peak appeared at 1839.5 eV in the Si K-edge XANES spectra for Si + -implanted HOPG. This energy is lower than those of the Si 1s→σ * resonance peaks in any other Si-containing materials. The intensity of the resonance peak showed strong polarization dependence, which suggests that the final state orbitals around the implanted Si atoms have π * -like character. It is concluded that the σ-type Si-C bonds produced by the Si + -ion implantation are nearly parallel to the graphite plane, and Si x C phase forms two-dimensionally spread graphite-like layer with sp 2 bonds

The effects of phosphorus limitation on carbon metabolism in diatoms.

Science.gov (United States)

Brembu, Tore; Mühlroth, Alice; Alipanah, Leila; Bones, Atle M

2017-09-05

Phosphorus is an essential element for life, serving as an integral component of nucleic acids, lipids and a diverse range of other metabolites. Concentrations of bioavailable phosphorus are low in many aquatic environments. Microalgae, including diatoms, apply physiological and molecular strategies such as phosphorus scavenging or recycling as well as adjusting cell growth in order to adapt to limiting phosphorus concentrations. Such strategies also involve adjustments of the carbon metabolism. Here, we review the effect of phosphorus limitation on carbon metabolism in diatoms. Two transcriptome studies are analysed in detail, supplemented by other transcriptome, proteome and metabolite data, to gain an overview of different pathways and their responses. Phosphorus, nitrogen and silicon limitation responses are compared, and similarities and differences discussed. We use the current knowledge to propose a suggestive model for the carbon flow in phosphorus-replete and phosphorus-limited diatom cells.This article is part of the themed issue 'The peculiar carbon metabolism in diatoms'. © 2017 The Authors.

Inverse-model estimates of the ocean's coupled phosphorus, silicon, and iron cycles

Directory of Open Access Journals (Sweden)

B. Pasquier

2017-09-01

Full Text Available The ocean's nutrient cycles are important for the carbon balance of the climate system and for shaping the ocean's distribution of dissolved elements. Dissolved iron (dFe is a key limiting micronutrient, but iron scavenging is observationally poorly constrained, leading to large uncertainties in the external sources of iron and hence in the state of the marine iron cycle. Here we build a steady-state model of the ocean's coupled phosphorus, silicon, and iron cycles embedded in a data-assimilated steady-state global ocean circulation. The model includes the redissolution of scavenged iron, parameterization of subgrid topography, and small, large, and diatom phytoplankton functional classes. Phytoplankton concentrations are implicitly represented in the parameterization of biological nutrient utilization through an equilibrium logistic model. Our formulation thus has only three coupled nutrient tracers, the three-dimensional distributions of which are found using a Newton solver. The very efficient numerics allow us to use the model in inverse mode to objectively constrain many biogeochemical parameters by minimizing the mismatch between modeled and observed nutrient and phytoplankton concentrations. Iron source and sink parameters cannot jointly be optimized because of local compensation between regeneration, recycling, and scavenging. We therefore consider a family of possible state estimates corresponding to a wide range of external iron source strengths. All state estimates have a similar mismatch with the observed nutrient concentrations and very similar large-scale dFe distributions. However, the relative contributions of aeolian, sedimentary, and hydrothermal iron to the total dFe concentration differ widely depending on the sources. Both the magnitude and pattern of the phosphorus and opal exports are well constrained, with global values of 8. 1  ±  0. 3 Tmol P yr−1 (or, in carbon units, 10. 3  ±  0. 4�

Quantitative autoradiography of semiconductor materials by means of diffused phosphorus standards

International Nuclear Information System (INIS)

Treutler, H.C.; Freyer, K.

1983-01-01

A suitable standard sample was developed and tested on the basis of phosphorus for the quantitative autoradiography of elements of interest in semiconductor technology. By the aid of silicon disks with a phosphorus concentration of 6x10 17 atomsxcm - 2 the error of the quantitative autoradiogprahic method is determined. The relative mean error of the density measurement is at best +-4%; the relative mean error of the determination of phosphorus concentration by use of an error-free standard sample is about +-15%. The method will be extended to other elements by use of this standard sample of phosphorus. (author)

Effect of phosphorus dopant concentration on the carrier mobility in ...

African Journals Online (AJOL)

This study investigated the effect of phosphorus dopant concentration on mobility of crystalline silicon (c-Si). It considers different temperature ranges, from 100 K to 500 K, and dopant concentration from 1012 cm-3 to 1020 cm-3 in relation to its effect on the mobility of the crystalline silicon. This study indicates that the ...

Controlled doping by self-assembled dendrimer-like macromolecules

Science.gov (United States)

Wu, Haigang; Guan, Bin; Sun, Yingri; Zhu, Yiping; Dan, Yaping

2017-02-01

Doping via self-assembled macromolecules might offer a solution for developing single atom electronics by precisely placing individual dopants at arbitrary location to meet the requirement for circuit design. Here we synthesize dendrimer-like polyglycerol macromolecules with each carrying one phosphorus atom in the core. The macromolecules are immobilized by the coupling reagent onto silicon surfaces that are pre-modified with a monolayer of undecylenic acid. Nuclear magnetic resonance (NMR) and X-ray photoelectron spectroscopy (XPS) are employed to characterize the synthesized macromolecules and the modified silicon surfaces, respectively. After rapid thermal annealing, the phosphorus atoms carried by the macromolecules diffuse into the silicon substrate, forming dopants at a concentration of 1017 cm-3. Low-temperature Hall effect measurements reveal that the ionization process is rather complicated. Unlike the widely reported simple ionization of phosphorus dopants, nitrogen and carbon are also involved in the electronic activities in the monolayer doped silicon.

An indirect sequential determination of phosphorus and arsenic in high-purity tungsten and its compounds by atomic-absorption spectrophotometry

International Nuclear Information System (INIS)

Tekula-Buxbaum, P.

1981-01-01

An indirect atomic-absorption spectrophotometric method based on selective extraction of heteropolymolybdic acids has been developed for determination of small quantities of P and As in high-purity tungsten metal and tungsten compounds. The method is suitable for determination of 5-100 ppm of phosphorus and arsenic. The relative standard deviation is 38-5% for P and 31-3% for As, depending on the concentrations. (auth.)

Hot wire and spark pyrolysis as simple new routes to silicon nanoparticle synthesis

CSIR Research Space (South Africa)

Scriba, MR

2012-11-01

Full Text Available doped silicon powders have a much higher conductivity than those doped with phosphorus. TEM and XPS analysis reveals that the difference in electrical resistivity between boron an phosphorus doped particles can be attributed to phosphorus dopants being...

Black phosphorus saturable absorber for ultrashort pulse generation

Energy Technology Data Exchange (ETDEWEB)

Sotor, J., E-mail: jaroslaw.sotor@pwr.edu.pl; Sobon, G.; Abramski, K. M. [Laser and Fiber Electronics Group, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, Wroclaw 50-370 (Poland); Macherzynski, W.; Paletko, P. [Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, Wroclaw 50-372 (Poland)

2015-08-03

Low-dimensional materials, due to their unique and versatile properties, are very interesting for numerous applications in electronics and optoelectronics. Recently rediscovered black phosphorus, with a graphite-like layered structure, can be effectively exfoliated up to the single atomic layer called phosphorene. Contrary to graphene, it possesses a direct band gap controllable by the number of stacked atomic layers. For those reasons, black phosphorus is now intensively investigated and can complement or replace graphene in various photonics and electronics applications. Here, we demonstrate that black phosphorus can serve as a broadband saturable absorber and can be used for ultrashort optical pulse generation. The mechanically exfoliated ∼300 nm thick layers of black phosphorus were transferred onto the fiber core, and under pulsed excitation at 1560 nm wavelength, its transmission increases by 4.6%. We have demonstrated that the saturable absorption of black phosphorus is polarization sensitive. The fabricated device was used to mode-lock an Er-doped fiber laser. The generated optical solitons with the 10.2 nm bandwidth and 272 fs duration were centered at 1550 nm. The obtained results unambiguously show that black phosphorus can be effectively used for ultrashort pulse generation with performances similar or even better than currently used graphene or carbon nanotubes. This application of black phosphorus proves its great potential to future practical use in photonics.

Plasma enhanced atomic layer deposited MoOx emitters for silicon heterojunction solar cells

OpenAIRE

Ziegler, J.; Mews, M.; Kaufmann, K.; Schneider, T.; Sprafke, A.N.; Korte, L.; Wehrsporn, R.B

2015-01-01

A method for the deposition of molybdenum oxide MoOx with high growth rates at temperatures below 200 C based on plasma enhanced atomic layer deposition is presented. The stoichiometry of the overstoichiometric MoOx films can be adjusted by the plasma parameters. First results of these layers acting as hole selective contacts in silicon heterojunction solar cells are presented and discussed

On the influence of extrinsic point defects on irradiation-induced point-defect distributions in silicon

International Nuclear Information System (INIS)

Vanhellemont, J.; Romano-Rodriguez, A.

1994-01-01

A semi-quantitative model describing the influence of interfaces and stress fields on {113}-defect generation in silicon during 1-MeV electron irradiation, is further developed to take into account also the role of extrinsic point defects. It is shown that the observed distribution of {113}-defects in high-flux electron-irradiated silicon and its dependence on irradiation temperature and dopant concentration can be understood by taking into account not only the influence of the surfaces and interfaces as sinks for intrinsic point defects but also the thermal stability of the bulk sinks for intrinsic point defects. In heavily doped silicon the bulk sinks are related with pairing reactions of the dopant atoms with the generated intrinsic point defects or related with enhanced recombination of vacancies and self-interstitials at extrinsic point defects. The obtained theoretical results are correlated with published experimental data on boron-and phosphorus-doped silicon and are illustrated with observations obtained by irradiating cross-section transmission electron microscopy samples of wafer with highly doped surface layers. (orig.)

Neutron activation determination of phosphorus in semiconductor materials

International Nuclear Information System (INIS)

Verevkin, G.V.; Gil'bert, Eh.N.; Gol'dshtejn, M.M.; Yudelevich, I.G.; Yurchenko, V.K.

1976-01-01

The solvent extraction of molybdophosphoric acid (MPA) with benzene and dichloroethane solutions of dioctylsulphoxide has been studied. A neutron-activation method has been worked out of determining phosphorus in semiconductor silicon, high purity gallium, and homoepitaxial films of gallium arsenide. The method is based on separation of radiochemically pure phosphorus in the form of MPA by extraction with 0.2 M solution of dioctylsulphoxide in benzene and measurement of 32 P activity on a liquid scintillation spectrometer. The method makes it possible to determine phosphorus in the materials enumerated with a limit of detection of 1.9x10 -10 g and a relative standard deviation of not more than 0.05

Ultrafast triggered transient energy storage by atomic layer deposition into porous silicon for integrated transient electronics

Science.gov (United States)

Douglas, Anna; Muralidharan, Nitin; Carter, Rachel; Share, Keith; Pint, Cary L.

2016-03-01

Here we demonstrate the first on-chip silicon-integrated rechargeable transient power source based on atomic layer deposition (ALD) coating of vanadium oxide (VOx) into porous silicon. A stable specific capacitance above 20 F g-1 is achieved until the device is triggered with alkaline solutions. Due to the rational design of the active VOx coating enabled by ALD, transience occurs through a rapid disabling step that occurs within seconds, followed by full dissolution of all active materials within 30 minutes of the initial trigger. This work demonstrates how engineered materials for energy storage can provide a basis for next-generation transient systems and highlights porous silicon as a versatile scaffold to integrate transient energy storage into transient electronics.Here we demonstrate the first on-chip silicon-integrated rechargeable transient power source based on atomic layer deposition (ALD) coating of vanadium oxide (VOx) into porous silicon. A stable specific capacitance above 20 F g-1 is achieved until the device is triggered with alkaline solutions. Due to the rational design of the active VOx coating enabled by ALD, transience occurs through a rapid disabling step that occurs within seconds, followed by full dissolution of all active materials within 30 minutes of the initial trigger. This work demonstrates how engineered materials for energy storage can provide a basis for next-generation transient systems and highlights porous silicon as a versatile scaffold to integrate transient energy storage into transient electronics. Electronic supplementary information (ESI) available: (i) Experimental details for ALD and material fabrication, ellipsometry film thickness, preparation of gel electrolyte and separator, details for electrochemical measurements, HRTEM image of VOx coated porous silicon, Raman spectroscopy for VOx as-deposited as well as annealed in air for 1 hour at 450 °C, SEM and transient behavior dissolution tests of uniformly coated VOx on

Application of hydrogen-plasma technology for property modification of silicon and producing the silicon-based structures

International Nuclear Information System (INIS)

Fedotov, A.K.; Mazanik, A.V.; Ul'yashin, A.G.; Dzhob, R; Farner, V.R.

2000-01-01

Effects of atomic hydrogen on the properties of Czochralski-grown single crystal silicon as well as polycrystalline shaped silicon have been investigated. It was established that the buried defect layers created by high-energy hydrogen or helium ion implantation act as a good getter centers for hydrogen atoms introduced in silicon in the process of hydrogen plasma hydrogenation. Atomic hydrogen was shown to be active as a catalyzer significantly enhancing the rate of thermal donors formation in p-type single crystal silicon. This effect can be used for n-p- and p-n-p-silicon based device structures producing [ru

Simulant molecules with trivalent or pentavalent phosphorus atoms: bond dissociation energies and other thermodynamic and structural properties from quantum chemical models.

Science.gov (United States)

Hahn, David K; RaghuVeer, Krishans S; Ortiz, J V

2011-08-04

The CBS-QB3 and G4 thermochemical models have been used to generate energetic, structural, and spectroscopic data on a set of molecules with trivalent or pentavalent phosphorus atoms that can serve as simulants of chemical warfare agents. Based on structural data, the conformational stabilities of these molecules are explained in terms of the anomeric interaction within the OPOC and OPSC fragments. For those cases where experimental data are available, comparisons have been made between calculated and previously reported vibrational frequencies. All varieties of bond dissociation energies have been examined except those for C-H and P═O bonds. In trivalent phosphorus molecules, the O-C and S-C bonds have the lowest dissociation energies. In the pentavalent phosphorus set, the S-C bonds, followed by P-S bonds, have the lowest dissociation energies. In the fluorinated simulant molecules, the P-F bond is strongest, and the P-C or O-C bonds are weakest. © 2011 American Chemical Society

Superconducting phases of phosphorus hydride under pressure. Stabilization by mobile molecular hydrogen

Energy Technology Data Exchange (ETDEWEB)

Bi, Tiange; Miller, Daniel P.; Shamp, Andrew; Zurek, Eva [Department of Chemistry, State University of New York, Buffalo, NY (United States)

2017-08-14

At 80 GPa, phases with the PH{sub 2} stoichiometry, which are composed of simple cubic like phosphorus layers capped with hydrogen atoms and layers of H{sub 2} molecules, are predicted to be important species contributing to the recently observed superconductivity in compressed phosphine. The electron-phonon coupling in these phases results from the motions of the phosphorus atoms and the hydrogen atoms bound to them. The role of the mobile H{sub 2} layers is to decrease the Coulomb repulsion between the negatively charged hydrogen atoms capping the phosphorus layers. An insulating PH{sub 5} phase, the structure and bonding of which is reminiscent of diborane, is also predicted to be metastable at this pressure. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

Low atomic number coating for XEUS silicon pore optics

Science.gov (United States)

Lumb, D. H.; Jensen, C. P.; Krumrey, M.; Cibik, L.; Christensen, F.; Collon, M.; Bavdaz, M.

2008-07-01

We describe a set of measurements on coated silicon substrates that are representative of the material to be used for the XEUS High Performance Pore Optics (HPO) technology. X-ray angular reflectance measurements at 2.8 and 8 keV, and energy scans of reflectance at a fixed angle representative of XEUS graze angles are presented. Reflectance is significantly enhanced for low energies when a low atomic number over-coating is applied. Modeling of the layer thicknesses and roughness is used to investigate the dependence on the layer thicknesses, metal and over coat material choices. We compare the low energy effective area increase that could be achieved with an optimized coating design.

Transport properties of ultrathin black phosphorus on hexagonal boron nitride

Energy Technology Data Exchange (ETDEWEB)

Doganov, Rostislav A.; Özyilmaz, Barbaros [Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546 Singapore (Singapore); Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore (Singapore); Graduate School for Integrative Sciences and Engineering (NGS), National University of Singapore, 28 Medical Drive, 117456 Singapore (Singapore); Koenig, Steven P.; Yeo, Yuting [Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546 Singapore (Singapore); Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore (Singapore); Watanabe, Kenji; Taniguchi, Takashi [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

2015-02-23

Ultrathin black phosphorus, or phosphorene, is a two-dimensional material that allows both high carrier mobility and large on/off ratios. Similar to other atomic crystals, like graphene or layered transition metal dichalcogenides, the transport behavior of few-layer black phosphorus is expected to be affected by the underlying substrate. The properties of black phosphorus have so far been studied on the widely utilized SiO{sub 2} substrate. Here, we characterize few-layer black phosphorus field effect transistors on hexagonal boron nitride—an atomically smooth and charge trap-free substrate. We measure the temperature dependence of the field effect mobility for both holes and electrons and explain the observed behavior in terms of charged impurity limited transport. We find that in-situ vacuum annealing at 400 K removes the p-doping of few-layer black phosphorus on both boron nitride and SiO{sub 2} substrates and reduces the hysteresis at room temperature.

Transport spectroscopy of coupled donors in silicon nano-transistors

Science.gov (United States)

Moraru, Daniel; Samanta, Arup; Anh, Le The; Mizuno, Takeshi; Mizuta, Hiroshi; Tabe, Michiharu

2014-01-01

The impact of dopant atoms in transistor functionality has significantly changed over the past few decades. In downscaled transistors, discrete dopants with uncontrolled positions and number induce fluctuations in device operation. On the other hand, by gaining access to tunneling through individual dopants, a new type of devices is developed: dopant-atom-based transistors. So far, most studies report transport through dopants randomly located in the channel. However, for practical applications, it is critical to control the location of the donors with simple techniques. Here, we fabricate silicon transistors with selectively nanoscale-doped channels using nano-lithography and thermal-diffusion doping processes. Coupled phosphorus donors form a quantum dot with the ground state split into a number of levels practically equal to the number of coupled donors, when the number of donors is small. Tunneling-transport spectroscopy reveals fine features which can be correlated with the different numbers of donors inside the quantum dot, as also suggested by first-principles simulation results. PMID:25164032

Application of an improved band-gap narrowing model to the numerical simulation of recombination properties of phosphorus-doped silicon emitters

Energy Technology Data Exchange (ETDEWEB)

Schumacher, J.O. [Fraunhofer Institute for Solar Energy Systems ISE, Oltmannsstr, 5, D-79100 Freiburg (Germany); Altermatt, P.P.; Heiser, G.; Aberle, A.G. [Photovoltaics Special Research Centre, University of NSW, 2052 Sydney (Australia)

2001-01-01

The commonly used band-gap narrowing (BGN) models for crystalline silicon do not describe heavily doped emitters with desirable precision. One of the reasons for this is that the applied BGN models were empirically derived from measurements assuming Boltzmann statistics. We apply a new BGN model derived by Schenk from quantum mechanical principles and demonstrate that carrier degeneracy and the new BGN model both substantially affect the electron-hole product within the emitter region. Simulated saturation current densities of heavily phosphorus-doped emitters, calculated with the new BGN model, are lower than results obtained with the widely used empirical BGN model of del Alamo.

Synthesis and Doping of Silicon Nanocrystals for Versatile Nanocrystal Inks

Science.gov (United States)

Kramer, Nicolaas Johannes

atmospheric pressures necessitates high plasma densities to reach temperatures required for crystallization of nanoparticles. Using experimentally determined plasma properties from the literature, the model estimates the nanoparticle temperature that is achieved during synthesis at atmospheric pressures. It was found that temperatures well above those required for crystallization can be achieved. Now that the synthesis of nanocrystals is understood, the second half of this thesis will focus on doping of the nanocrystals. The doping of semiconductor nanocrystals, which is vital for the optimization of nanocrystal-based devices, remains a challenge. Gas phase plasma approaches have been very successful in incorporating dopant atoms into nanocrystals by simply adding a dopant precursor during synthesis. However, little is known about the electronic activation of these dopants. This was investigated with field-effect transistor measurements using doped silicon nanocrystal films. It was found that, analogous to bulk silicon, boron and phosphorous electronically dope silicon nanocrystals. However, the dopant activation efficiency remains low as a result of self-purification of the dopants to the nanocrystal surface. Next the plasmonic properties of heavily doped silicon nanocrystals was explored. While the synthesis method was identical, the plasmonic behavior of phosphorus-doped and boron-doped nanocrystals was found the be significantly different. Phosphorus-doped nanocrystals exhibit a plasmon resonance immediately after synthesis, while boron-doped nanocrystals require a post-synthesis annealing or oxidation treatment. This is a result of the difference in dopant location. Phosphorus is more likely to be incorporated into the core of the nanocrystal, while the majority of boron is placed on the surface of the nanocrystal. The oxidized boron-doped particles exhibit stable plasmonic properties, and therefore this allows for the production of air-stable silicon-based plasmonic

The Effect of Disinfection by Spray Atomization on Dimensional Accuracy of Condensation Silicone Impressions

Directory of Open Access Journals (Sweden)

Fariba Saleh Saber

2010-12-01

Full Text Available Background and aims. The condensation silicone impression materials are available, but there is little knowledge of their accuracy after disinfection. The objective of this study was to evaluate the effect of the disinfection by spray atomization on dimensional accuracy of condensation silicone impressions. Materials and methods. Impressions were made on a stainless steel master model containing a simulated two complete crown preparation with an edentulous space interposed using Spidex® and Rapid® impression materials. 44 impressions were made with each material, of which 16 were disinfected with 5.25% sodium hypochlorite, 16 were disinfected with 10% iodophor and 12 were not disinfected. Three dimensional measurements of working casts, including interpreparation distance, height, and diameter, were calculated using a measuring microscope graduated at 0.001 mm. Dimensional changes (mm between the disinfected and non-disinfected working casts were compared. One-way analysis of variance (ANOVA was employed to analyze the data (α=0.05. Results. Disinfection of each condensation silicone material by spraying atomization with two different disinfectant material resulted in significant change in interpreparation distance (p<0.05. Changes in height and diameter were only significant in Spidex® impressions (p<0.05. Conclusion. Significant changes in the mean dimensions were seen as a result of disinfection by spraying; however, the dimensional changes do not seem great enough to cause critical positional distortion of teeth when fixed partial denture restorations are made.

Electrophysical properties of silicon doped by palladium-103 isotope

International Nuclear Information System (INIS)

Makhkamov, Sh.; Tursunov, N.A.; Sattiev, A.R.; Normurodov, A.B.

2007-01-01

The work is devoted to study of radiation physical processes taking place in Si under nuclear transmutation, Identification and determination of defects microstructure and homogeneities and their distribution, study of interactions of nuclear-transformed phosphorus isotopes with palladium atoms, and its effect on crystal properties. For examination monocrystalline silicon of n- and p-type conductivity with specific resistance from 1 to 40 Ω·cm, dislocation density ∼10 4 cm -2 and oxygen content ∼10 17 cm -3 has been applied. Doping of silicon plates by examined admixture has been carried out by thermal diffusion method within temperature range 1000-1250 deg. C for 0.5- 5 h. Irradiation of doped silicon was conducted by reactor neutron fluences 5·10 18 - 5·10 19 cm -2 with subsequent annealing at 1000 deg. C for 30 min. Efficiency of mixture centers formation in silicon, effect of concentration of formed mixture-defect centers on electro-physical, photoelectric and recombination parameters of doped silicon and revealing of type and state of generated defects have been controlled by electric, volume and X-ray fluorescent methods. On the base of spectroscopic researches it is shown, that in silicon forbidden zone after Pd diffusion in DLTS spectra peaks related with acceptor (E c -0.18 and E v +0.34 eV) levels, and peak responsible for level E v +0.32 eV of donor character caused by palladium impurity. It is shown, that irradiation of doped silicon samples by neutrons lead to nuclear transmutation of 102 Pd, 104 Pd in 103 Pd isotopes in the crystal volume with following electron capture in stable isotope 103m Rh

Characterization of phosphorus segregation in neutron-irradiated Russian pressure vessel steel weld

International Nuclear Information System (INIS)

Miller, M.K.; Jayaram, R.; Russell, K.F.

1995-01-01

An atom probe field ion microscopy characterization of three Russian pressure vessel steels has been performed. Field ion micrographs of several lath boundaries have indicated that they are decorated with a semicontinuous film of discrete brightly-imaging precipitates that were identified as molybdenum carbonitrides. In addition, extremely high phosphorus levels were measured at the lath boundaries. The phosphorus was found to be confined to an extremely narrow region indicative of monolayer type segregation. The phosphorus coverage determined from the atom probe results of the unirradiated materials agree with predictions based on McLean's equilibrium model of grain boundary segregation. The boundary phosphorus coverage of a neutron-irradiated weld material was significantly higher than in the unirradiated material. Ultrafine darkly-imaging copper- and phosphorus-enriched precipitates were also observed in the matrix of the neutron-irradiated material. (orig.)

Phosphorus doping and deposition pressure effects on optical and electrical properties of polysilicon

International Nuclear Information System (INIS)

Zaghdoudi, M.; Abdelkrim, M.M.; Fathallah, M.; Mohammed-Brahim, T.; Rogel, R.

2006-01-01

The optical and electrical properties of amorphously deposited and then post-crystallized silicon films are studied as a function of the deposition pressure and the phosphorus doping. Amorphous silicon films are deposited in a high pressure regime by SAPCVD (Sub-Atmospheric Pressure Chemical Vapour Deposition) to study the effect of the deposition pressure. They are also deposited in a low pressure regime by LPCVD (Low Pressure Chemical Vapour Deposition) to study the effect of a low phosphorus doping. Both types of amorphous films are then crystallized in the solid phase at 600 deg. C. Using different optical and electrical characterization techniques, the beneficial effect of a high pressure as well as of a weak phosphorus doping on the decrease of the defect density is highlighted. These results give some ways to improve the quality of polysilicon enough to be used in photovoltaic or in thin film electronic devices

Chromatography of phosphorus oxoacids

International Nuclear Information System (INIS)

Ohashi, S.

1975-01-01

The present state of studies on the chromatographic separation of phosphorus oxoacids is surveyed. In this paper, chromatographic techniques are divided into four groups, i.e. paper and thin-layer chromatography, paper electrophoresis, ion-exchange chromatography, and gel chromatography. The separation mechanisms and characteristics for these chromatographic methods are discussed and some examples for the separation of phosphorus oxoacids are described. As examples of the application of ion-exchange and gel chromatography, studies on the hot atom chemistry of 32 P in solid inorganic phosphates and those on the substitution reactions between diphosphonate (diphosphite) and polyphosphates are reported. (author)

Spontaneous breaking of time-reversal symmetry in strongly interacting two-dimensional electron layers in silicon and germanium.

Science.gov (United States)

Shamim, S; Mahapatra, S; Scappucci, G; Klesse, W M; Simmons, M Y; Ghosh, A

2014-06-13

We report experimental evidence of a remarkable spontaneous time-reversal symmetry breaking in two-dimensional electron systems formed by atomically confined doping of phosphorus (P) atoms inside bulk crystalline silicon (Si) and germanium (Ge). Weak localization corrections to the conductivity and the universal conductance fluctuations were both found to decrease rapidly with decreasing doping in the Si:P and Ge:P delta layers, suggesting an effect driven by Coulomb interactions. In-plane magnetotransport measurements indicate the presence of intrinsic local spin fluctuations at low doping, providing a microscopic mechanism for spontaneous lifting of the time-reversal symmetry. Our experiments suggest the emergence of a new many-body quantum state when two-dimensional electrons are confined to narrow half-filled impurity bands.

Synthesis of thermoresponsive poly(N-isopropylacrylamide) brush on silicon wafer surface via atom transfer radical polymerization

Energy Technology Data Exchange (ETDEWEB)

Turan, Eylem; Demirci, Serkan [Department of Chemistry, Faculty of Art and Science, Gazi University, 06500 Besevler, Ankara (Turkey); Caykara, Tuncer, E-mail: caykara@gazi.edu.t [Department of Chemistry, Faculty of Art and Science, Gazi University, 06500 Besevler, Ankara (Turkey)

2010-08-31

Thermoresponsive poly(N-isopropylacrylamide) [poly(NIPAM)] brush on silicon wafer surface was prepared by combining the self-assembled monolayer of initiator and atom transfer radical polymerization (ATRP). The resulting polymer brush was characterized by in situ reflectance Fourier transform infrared spectroscopy, atomic force microscopy and ellipsometry techniques. Gel permeation chromatography determination of the number-average molecular weight and polydispersity index of the brush detached from the silicon wafer surface suggested that the surface-initiated ATRP method can provide relatively homogeneous polymer brush. Contact angle measurements exhibited a two-stage increase upon heating over the board temperature range 25-45 {sup o}C, which is in contrast to the fact that free poly(NIPAM) homopolymer in aqueous solution exhibits a phase transition at ca. 34 {sup o}C within a narrow temperature range. The first de-wetting transition takes place at 27 {sup o}C, which can be tentatively attributed to the n-cluster induced collapse of the inner region of poly(NIPAM) brush close to the silicon surface; the second de-wetting transition occurs at 38 {sup o}C, which can be attributed to the outer region of poly(NIPAM) brush, possessing much lower chain density compared to that of the inner part.

N-Type delta Doping of High-Purity Silicon Imaging Arrays

Science.gov (United States)

Blacksberg, Jordana; Hoenk, Michael; Nikzad, Shouleh

2005-01-01

metallization. The success of the process depends on accurate temperature control, surface treatment, growth of high-quality crystalline silicon, and precise control of thicknesses of layers. MBE affords the necessary nanometer- scale control of the placement of atoms for delta doping. More specifically, the process consists of MBE deposition of a thin silicon buffer layer, the n-type delta doping layer, and a thin silicon cap layer. The n dopant selected for initial experiments was antimony, but other n dopants as (phosphorus or arsenic) could be used. All n-type dopants in silicon tend to surface-segregate during growth, leading to a broadened dopant-concentration- versus-depth profile. In order to keep the profile as narrow as possible, the substrate temperature is held below 300 C during deposition of the silicon cap layer onto the antimony delta layer. The deposition of silicon includes a silicon- surface-preparation step, involving H-termination, that enables the growth of high-quality crystalline silicon at the relatively low temperature with close to full electrical activation of donors in the surface layer.

Influence of average ion energy and atomic oxygen flux per Si atom on the formation of silicon oxide permeation barrier coatings on PET

Science.gov (United States)

Mitschker, F.; Wißing, J.; Hoppe, Ch; de los Arcos, T.; Grundmeier, G.; Awakowicz, P.

2018-04-01

The respective effect of average incorporated ion energy and impinging atomic oxygen flux on the deposition of silicon oxide (SiO x ) barrier coatings for polymers is studied in a microwave driven low pressure discharge with additional variable RF bias. Under consideration of plasma parameters, bias voltage, film density, chemical composition and particle fluxes, both are determined relative to the effective flux of Si atoms contributing to film growth. Subsequently, a correlation with barrier performance and chemical structure is achieved by measuring the oxygen transmission rate (OTR) and by performing x-ray photoelectron spectroscopy. It is observed that an increase in incorporated energy to 160 eV per deposited Si atom result in an enhanced cross-linking of the SiO x network and, therefore, an improved barrier performance by almost two orders of magnitude. Furthermore, independently increasing the number of oxygen atoms to 10 500 per deposited Si atom also lead to a comparable barrier improvement by an enhanced cross-linking.

Selective deposition contact patterning using atomic layer deposition for the fabrication of crystalline silicon solar cells

International Nuclear Information System (INIS)

Cho, Young Joon; Shin, Woong-Chul; Chang, Hyo Sik

2014-01-01

Selective deposition contact (SDC) patterning was applied to fabricate the rear side passivation of crystalline silicon (Si) solar cells. By this method, using screen printing for contact patterning and atomic layer deposition for the passivation of Si solar cells with Al 2 O 3 , we produced local contacts without photolithography or any laser-based processes. Passivated emitter and rear-contact solar cells passivated with ozone-based Al 2 O 3 showed, for the SDC process, an up-to-0.7% absolute conversion-efficiency improvement. The results of this experiment indicate that the proposed method is feasible for conversion-efficiency improvement of industrial crystalline Si solar cells. - Highlights: • We propose a local contact formation process. • Local contact forms a screen print and an atomic layer deposited-Al 2 O 3 film. • Ozone-based Al 2 O 3 thin film was selectively deposited onto patterned silicon. • Selective deposition contact patterning method can increase cell-efficiency by 0.7%

σ-Hole Interactions of Covalently-Bonded Nitrogen, Phosphorus and Arsenic: A Survey of Crystal Structures

Directory of Open Access Journals (Sweden)

Peter Politzer

2014-02-01

Full Text Available Covalently-bonded atoms of Groups IV–VII tend to have anisotropic charge distributions, the electronic densities being less on the extensions of the bonds (σ-holes than in the intervening regions. These σ-holes often give rise to positive electrostatic potentials through which the atom can interact attractively and highly directionally with negative sites (e.g., lone pairs, π electrons and anions, forming noncovalent complexes. For Group VII this is called “halogen bonding” and has been widely studied both computationally and experimentally. For Groups IV–VI, it is only since 2007 that positive σ-holes have been recognized as explaining many noncovalent interactions that have in some instances long been known experimentally. There is considerable experimental evidence for such interactions involving groups IV and VI, particularly in the form of surveys of crystal structures. However we have found less extensive evidence for Group V. Accordingly we have now conducted a survey of the Cambridge Structural Database for crystalline close contacts of trivalent nitrogen, phosphorus and arsenic with six different types of electronegative atoms in neighboring molecules. We have found numerous close contacts that fit the criteria for σ-hole interactions. Some of these are discussed in detail; in two instances, computed molecular electrostatic potentials are presented.

Dispersion engineering of thick high-Q silicon nitride ring-resonators via atomic layer deposition.

Science.gov (United States)

Riemensberger, Johann; Hartinger, Klaus; Herr, Tobias; Brasch, Victor; Holzwarth, Ronald; Kippenberg, Tobias J

2012-12-03

We demonstrate dispersion engineering of integrated silicon nitride based ring resonators through conformal coating with hafnium dioxide deposited on top of the structures via atomic layer deposition. Both, magnitude and bandwidth of anomalous dispersion can be significantly increased. The results are confirmed by high resolution frequency-comb-assisted-diode-laser spectroscopy and are in very good agreement with the simulated modification of the mode spectrum.

Reduction in Recombination Current Density in Boron Doped Silicon Using Atomic Hydrogen

Science.gov (United States)

Young, Matthew Garett

The solar industry has grown immensely in recent years and has reached a point where solar energy has now become inexpensive enough that it is starting to emerge as a mainstream electrical generation source. However, recent economic analysis has suggested that for solar to become a truly wide spread source of electricity, the costs still need to plummet by a factor of 8x. This demands new and innovative concepts to help lower such cost. In pursuit of this goal, this dissertation examines the use of atomic hydrogen to lessen the recombination current density in the boron doped region of n-type silicon solar cells. This required the development of a boron diffusion process that maintained the bulk lifetime of n-type silicon such that the recombination current density could be extracted by photoconductance spectroscopy. It is demonstrated that by hydrogenating boron diffusions, the majority carrier concentration can be controlled. By using symmetrically diffused test structures with quinhydrone-methanol surface passivation the recombination current density of a hydrogenated boron profile is shown to be less than that of a standard boron profile, by as much as 30%. This is then applied to a modified industrial silicon solar cell process to demonstrate an efficiency enhancement of 0.4%.

Report on achievements in fiscal 1998. Development of silicon manufacturing process to rationalize energy usage (Development of mass production technology for solar-grade silicon); 1998 nendo energy shiyo gorika silicon seizo process kaihatsu seika hokokusho. Taiyo denchiyo silicon ryosanka seizo gijutsu no kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1999-03-01

In the proliferation stage of solar cells, a technology is required to manufacture low-cost SOG-Si that can handle small quantity production. Development is being made on a manufacturing technology using high purity metallic silicon (99.5%) as the raw material. Considering that the subject impurities are P, B and metallic impurities (Fe, Ti and Al), a manufacturing method consisting of the following processes is being developed: metallic silicon/phosphorus removal, solidification and rough refining/boron removal, solidification and fine refining. Discussions are being advanced on phosphorus removal by using a large electron beam fusion equipment, and at the same time, the discussions are supported by fabricating and installing a large equipment intended of removing boron and the metallic impurities. Boron is removed by oxidizing it with steam. Therefore, the basic mechanism of the equipment is to spray argon plasma added with steam onto the molten silicon surface. In boron removal, diffusion of boron onto the reaction interface in the primary reaction determines the rate. A boron removal rate for B/10 to 0.1 ppm of 45 kg/h as maximum was achieved. The derived silicon has met the requirement. (NEDO)

Dry Phosphorus silicate glass etching and surface conditioning and cleaning for multi-crystalline silicon solar cell processing

International Nuclear Information System (INIS)

Kagilik, Ahmed S.

2014-01-01

As an alternative to the wet chemical etching method, dry chemical etching processes for Phosphorus silicate glass [PSG} layer removal using Trifluormethane/Sulfur Hexafluoride (CHF 3 / SF 6 ) gas mixture in commercial silicon-nitride plasma enhanced chemical vapour deposition (SiN-PECVD) system is applied. The dependence of the solar cell performance on the etching temperature is investigated and optimized. It is found that the SiN-PECVD system temperature variation has a significant impact on the whole solar cell characteristics. A dry plasma cleaning treatment of the Si wafer surface after the PSG removal step is also investigated and developed. The cleaning step is used to remove the polymer film which is formed during the PSG etching using both oxygen and hydrogen gases. By applying an additional cleaning step, the polymer film deposited on the silicon wafer surface after PSG etching is eliminated. The effect of different plasma cleaning conditions on solar cell performance is investigated. After optimization of the plasma operating conditions, the performance of the solar cell is improved and the overall gain in efficiency of 0.6% absolute is yielded compared to a cell without any further cleaning step. On the other hand, the best solar cell characteristics can reach values close to that achieved by the conventional wet chemical etching processes demonstrating the effectiveness of the additional O 2 /H 2 post cleaning treatment.(author)

Evaluation of silicon-chemiluminescence monitoring as a novel method for atomic fluorine determination and end point detection in plasma etch systems

NARCIS (Netherlands)

Zijlstra, P.A.; Beenakker, C.I.M.

1981-01-01

Optical methods for the detection of atomic fluorine in plasma etch systems are discussed and an experimental comparison is made between detection by optical emission and by a novel method based on the chemiluminescence from solid silicon in the presence of atomic fluorine. Although both methods

Photoluminescence of phosphorus atomic layer doped Ge grown on Si

Science.gov (United States)

Yamamoto, Yuji; Nien, Li-Wei; Capellini, Giovanni; Virgilio, Michele; Costina, Ioan; Schubert, Markus Andreas; Seifert, Winfried; Srinivasan, Ashwyn; Loo, Roger; Scappucci, Giordano; Sabbagh, Diego; Hesse, Anne; Murota, Junichi; Schroeder, Thomas; Tillack, Bernd

2017-10-01

Improvement of the photoluminescence (PL) of Phosphorus (P) doped Ge by P atomic layer doping (ALD) is investigated. Fifty P delta layers of 8 × 1013 cm-2 separated by 4 nm Ge spacer are selectively deposited at 300 °C on a 700 nm thick P-doped Ge buffer layer of 1.4 × 1019 cm-3 on SiO2 structured Si (100) substrate. A high P concentration region of 1.6 × 1020 cm-3 with abrupt P delta profiles is formed by the P-ALD process. Compared to the P-doped Ge buffer layer, a reduced PL intensity is observed, which might be caused by a higher density of point defects in the P delta doped Ge layer. The peak position is shifted by ˜0.1 eV towards lower energy, indicating an increased active carrier concentration in the P-delta doped Ge layer. By introducing annealing at 400 °C to 500 °C after each Ge spacer deposition, P desorption and diffusion is observed resulting in relatively uniform P profiles of ˜2 × 1019 cm-3. Increased PL intensity and red shift of the PL peak are observed due to improved crystallinity and higher active P concentration.

Morphology and electronic transport of polycrystalline silicon films deposited by SiF sub 4 /H sub 2 at a substrate temperature of 200 deg. C

CERN Document Server

Hazra, S; Ray, S

2002-01-01

Undoped and phosphorous doped polycrystalline silicon (poly-Si) films were deposited using a SiF sub 4 /H sub 2 gas mixture at a substrate temperature of 200 deg. C by radio frequency plasma enhanced chemical vapor deposition (rf-PECVD). Fourier transform infrared (FTIR) spectroscopy and x-ray diffraction (XRD) experiments reveal that the present poly-Si films are equivalent to the poly-Si films deposited at high temperature (>600 deg. C). XRD and scanning electron microscope observations show that the crystalline quality of slightly P-doped film is better compared to that of undoped poly-Si films. Phosphorus atom concentration in the slightly P-doped poly-Si film is 5.0x10 sup 1 sup 6 atoms/cm sup 3. Association of a few phosphorous atoms in the silicon matrix enhances crystallization as eutectic-forming metals do. Dark conductivity of slightly P-doped film is 4 orders of magnitude higher, although mobility-lifetime product (eta mu tau) is 2 orders of magnitude lower than that of undoped film. The presence o...

Silicon surface passivation using thin HfO2 films by atomic layer deposition

International Nuclear Information System (INIS)

Gope, Jhuma; Vandana; Batra, Neha; Panigrahi, Jagannath; Singh, Rajbir; Maurya, K.K.; Srivastava, Ritu; Singh, P.K.

2015-01-01

Graphical abstract: - Highlights: • HfO 2 films using thermal ALD are studied for silicon surface passivation. • As-deposited thin film (∼8 nm) shows better passivation with surface recombination velocity (SRV) <100 cm/s. • Annealing improves passivation quality with SRV ∼20 cm/s for ∼8 nm film. - Abstract: Hafnium oxide (HfO 2 ) is a potential material for equivalent oxide thickness (EOT) scaling in microelectronics; however, its surface passivation properties particularly on silicon are not well explored. This paper reports investigation on passivation properties of thermally deposited thin HfO 2 films by atomic layer deposition system (ALD) on silicon surface. As-deposited pristine film (∼8 nm) shows better passivation with <100 cm/s surface recombination velocity (SRV) vis-à-vis thicker films. Further improvement in passivation quality is achieved with annealing at 400 °C for 10 min where the SRV reduces to ∼20 cm/s. Conductance measurements show that the interface defect density (D it ) increases with film thickness whereas its value decreases after annealing. XRR data corroborate with the observations made by FTIR and SRV data.

Economical Atomic Layer Deposition

Science.gov (United States)

Wyman, Richard; Davis, Robert; Linford, Matthew

2010-10-01

Atomic Layer Deposition is a self limiting deposition process that can produce films at a user specified height. At BYU we have designed a low cost and automated atomic layer deposition system. We have used the system to deposit silicon dioxide at room temperature using silicon tetrachloride and tetramethyl orthosilicate. Basics of atomic layer deposition, the system set up, automation techniques and our system's characterization are discussed.

Auger electron spectroscopy study of surface segregation in the binary alloys copper-1 atomic percent indium, copper-2 atomic percent tin, and iron-6.55 atomic percent silicon

Science.gov (United States)

Ferrante, J.

1973-01-01

Auger electron spectroscopy was used to examine surface segregation in the binary alloys copper-1 at. % indium, copper-2 at. % tin and iron-6.55 at. % silicon. The copper-tin and copper-indium alloys were single crystals oriented with the /111/ direction normal to the surface. An iron-6.5 at. % silicon alloy was studied (a single crystal oriented in the /100/ direction for study of a (100) surface). It was found that surface segregation occurred following sputtering in all cases. Only the iron-silicon single crystal alloy exhibited equilibrium segregation (i.e., reversibility of surface concentration with temperature) for which at present we have no explanation. McLean's analysis for equilibrium segregation at grain boundaries did not apply to the present results, despite the successful application to dilute copper-aluminum alloys. The relation of solute atomic size and solubility to surface segregation is discussed. Estimates of the depth of segregation in the copper-tin alloy indicate that it is of the order of a monolayer surface film.

Amorphous silicon passivation for 23.3% laser processed back contact solar cells

Science.gov (United States)

Carstens, Kai; Dahlinger, Morris; Hoffmann, Erik; Zapf-Gottwick, Renate; Werner, Jürgen H.

2017-08-01

This paper presents amorphous silicon deposited at temperatures below 200 °C, leading to an excellent passivation layer for boron doped emitter and phosphorus doped back surface field areas in interdigitated back contact solar cells. A higher deposition temperature degrades the passivation of the boron emitter by an increased hydrogen effusion due to lower silicon hydrogen bond energy, proved by hydrogen effusion measurements. The high boron surface doping in crystalline silicon causes a band bending in the amorphous silicon. Under these conditions, at the interface, the intentionally undoped amorphous silicon becomes p-type conducting, with the consequence of an increased dangling bond defect density. For bulk amorphous silicon this effect is described by the defect pool model. We demonstrate, that the defect pool model is also applicable to the interface between amorphous and crystalline silicon. Our simulation shows the shift of the Fermi energy towards the valence band edge to be more pronounced for high temperature deposited amorphous silicon having a small bandgap. Application of optimized amorphous silicon as passivation layer for the boron doped emitter and phosphorus doped back surface field on the rear side of laser processed back contact solar cells, fabricated using four laser processing steps, yields an efficiency of 23.3%.

Influence of laser power on atom probe tomographic analysis of boron distribution in silicon

Energy Technology Data Exchange (ETDEWEB)

Tu, Y., E-mail: ytu@imr.tohoku.ac.jp [The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313 (Japan); Takamizawa, H.; Han, B.; Shimizu, Y.; Inoue, K.; Toyama, T. [The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313 (Japan); Yano, F. [The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313 (Japan); Tokyo City University, Setagaya, Tokyo 158-8557 (Japan); Nishida, A. [Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504 (Japan); Nagai, Y. [The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313 (Japan)

2017-02-15

The relationship between the laser power and the three-dimensional distribution of boron (B) in silicon (Si) measured by laser-assisted atom probe tomography (APT) is investigated. The ultraviolet laser employed in this study has a fixed wavelength of 355 nm. The measured distributions are almost uniform and homogeneous when using low laser power, while clear B accumulation at the low-index pole of single-crystalline Si and segregation along the grain boundaries in polycrystalline Si are observed when using high laser power (100 pJ). These effects are thought to be caused by the surface migration of atoms, which is promoted by high laser power. Therefore, for ensuring a high-fidelity APT measurement of the B distribution in Si, high laser power is not recommended. - Highlights: • Influence of laser power on atom probe tomographic analysis of B distribution in Si is investigated. • When using high laser power, inhomogeneous distributions of B in single-crystalline and polycrystalline Si are observed. • Laser promoted migration of B atoms over the specimen is proposed to explain these effects.

Physico-chemical properties and solubility behaviour of multi-substituted hydroxyapatite powders containing silicon

International Nuclear Information System (INIS)

Sprio, S.; Tampieri, A.; Landi, E.; Sandri, M.; Martorana, S.; Celotti, G.; Logroscino, G.

2008-01-01

Hydroxyapatite powders characterized by ionic substitutions both in anionic and cationic sites were successfully prepared by synthesis in aqueous medium. The process parameters were set up to allow the simultaneous substitution of the foreign ions, namely carbonate, magnesium and silicon in the crystallographic site of calcium and phosphorus, keeping in count the competition which arises between atoms destined to occupy the same crystallographic site. The chemico-physical properties of the powders were investigated through several analytical techniques, i.e. X-ray diffraction, infrared spectroscopy, atomic emission spectroscopy and thermo-gravimetric analysis. The results show that the utilization of sodium hydrogen-carbonate as a reactant allows the entering of carbonate into the HA structure, mainly in phosphate position, while sodium is eliminated during the process of the powder washing. The entering of silicon in the HA structure progressively reduces its crystallinity, as also carbonate ions do. Silicate and carbonate ions can enter simultaneously into the HA structure, in biological-like amounts, although they compete for the occupation of the phosphate site; the powder crystallinity is strongly reduced as the content of the two substituting ions increases, so that a limit molar concentration exists where the apatite structure collapses and an amorphous phase forms with the simultaneous formation of crystalline calcium carbonate. Solubility tests, carried out at physiological conditions, reveal an increased calcium release in the HA powders containing silicon compared to the silicon-free HA; the solubility behaviour of the multi-substituted HA powders at physiological conditions makes these materials promising as bioactive bone scaffold, as they are able to continuously supply ions which are essential for the process of bone reconstruction

Recovering phosphorus and uranium values from phosphate rock

International Nuclear Information System (INIS)

Sze, M.C.Y.; Long, R.H.

1981-01-01

Phosphate rock is acidulated with aqueous nitric acid to produce an aqueous solution containing phosphate values, calcium and uranium values. The aqueous solution is contacted with an extraction solvent for the uranium values: the extraction solvent comprising a water immiscible organic diluent, a dialkyl phosphoric acid having at least 10 carbon atoms, and an organic phosphorus compound having the formula R 1 R 2 R 3 P = O where R 1 , R 2 and R 3 are each either alkyl or alkoxy, the organic phosphorus compound having at least 10 carbon atoms. The uranium values are then recovered from the extraction solvent. In an example the extraction solvent is HDEHP and TOPO in kerosene. (author)

The annealing of interstitial carbon atoms in high-resistivity n-type silicon after proton irradiation

CERN Document Server

Kuhnke, M; Lindström, G

2002-01-01

The annealing of interstitial carbon C sub i after 7-10 MeV and 23 GeV proton irradiations at room temperature in high-resistivity n-type silicon is investigated. Deep level transient spectroscopy is used to determine the defect parameters. The annealing characteristics of the impurity defects C sub i , C sub i C sub s , C sub i O sub i and VO sub i suggest that the mobile C sub i atoms are also captured at divacancy VV sites at the cluster peripheries and not only at C sub s and O sub i sites in the silicon bulk. The deviation of the electrical filling characteristic of C sub i from the characteristic of a homogeneously distributed defect can be explained by an aggregation of C sub i atoms in the environment of the clusters. The capture rate of electrons into defects located in the cluster environment is reduced due to a positive space charge region surrounding the negatively charged cluster core. The optical filling characteristic of C sub i suggests that the change of the triangle-shaped electric field dis...

Silicon-based thin films as bottom electrodes in chalcogenide nonvolatile memories

Energy Technology Data Exchange (ETDEWEB)

Lee, Seung-Yun [IT Convergence and Components Laboratory, Electronics and Telecommunications Research Institute (ETRI), Yuseong-gu, Daejeon 305-350 (Korea, Republic of)], E-mail: seungyun@etri.re.kr; Yoon, Sung-Min; Choi, Kyu-Jeong; Lee, Nam-Yeal; Park, Young-Sam; Ryu, Sang-Ouk; Yu, Byoung-Gon; Kim, Sang-Hoon; Lee, Sang-Heung [IT Convergence and Components Laboratory, Electronics and Telecommunications Research Institute (ETRI), Yuseong-gu, Daejeon 305-350 (Korea, Republic of)

2007-10-31

The effect of the electrical resistivity of a silicon-germanium (SiGe) thin film on the phase transition in a GeSbTe (GST) chalcogenide alloy and the manufacturing aspect of the fabrication process of a chalcogenide memory device employing the SiGe film as bottom electrodes were investigated. While p-type SiGe bottom electrodes were formed using in situ doping techniques, n-type ones could be made in a different manner where phosphorus atoms diffused from highly doped silicon underlayers to undoped SiGe films. The p-n heterojunction did not form between the p-type GST and n-type SiGe layers, and the semiconduction type of the SiGe alloys did not influence the memory device switching. It was confirmed that an optimum resistivity value existed for memory operation in spite of proportionality of Joule heating to electrical resistivity. The very high resistivity of the SiGe film had no effect on the reduction of reset current, which might result from the resistance decrease of the SiGe alloy at high temperatures.

Ab initio simulation of amorphous silicon

International Nuclear Information System (INIS)

Cooper, N.C.; McKenzie, D.R.; Goringe, C.M.

1999-01-01

Full text: A first-principles Car-Parrinello molecular dynamics simulation of amorphous silicon is presented. Density Functional Theory is used to describe the forces between the atoms in a 64 atom supercell which is periodically repeated throughout space in order to generate an infinite network of atoms (a good approximation to a real solid). A quench from the liquid phase is used to achieve a quenched amorphous structure, which is subjected to an annealing cycle to improve its stability. The final, annealed network is in better agreement with experiment than any previous simulation of amorphous silicon. Significantly, the predicted average first-coordination numbers of 3.56 and 3.84 for the quenched and annealed structures from this simulation agree very closely with the experimental values of 3.55 and 3.90 respectively, whereas all previous simulations yielded first coordination numbers greater than 4. This improved agreement in coordination numbers is important because it supports the experimental finding that dangling bonds (which are associated with under-coordinated atoms) are more prevalent than floating bonds (the strained, longer bond of a five coordinate atom) in pure amorphous silicon. Finally, the effect of adding hydrogen to amorphous silicon was investigated by specifically placing hydrogen atoms at the likely defect sites. After a structural relaxation to optimise the positions of these hydrogen atoms, the localised electronic states associated with these defects are absent. Thus hydrogen is responsible for removing these defect states (which are able to trap carriers) from the edge of the band gap of the amorphous silicon. These results confirm the widely held ideas about the effect of hydrogen in producing remarkable improvements in the electronic properties of amorphous silicon

Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3

DEFF Research Database (Denmark)

Lu, Weifang; Iwasa, Yoshimi; Ou, Yiyu

2017-01-01

Porous silicon carbide (B–N co-doped SiC) produced by anodic oxidation showed strong photoluminescence (PL) at around 520 nm excited by a 375 nm laser. The porous SiC samples were passivated by atomic layer deposited (ALD) aluminum oxide (Al2O3) films, resulting in a significant enhancement...

Annealing behaviour of excess carriers in neutron-transmutation-doped silicon

International Nuclear Information System (INIS)

Maekawa, T.; Nogami, S.; Inoue, S.

1993-01-01

In neutron-transmutation-doped silicon wafers excess carriers are clearly generated over the transmuted phosphorus atoms. The generation occurs for annealing temperatures above 900 o C. The maximum percentage of excess carriers obtained is about 24.5% of the final carrier concentration. Due to the difference in energy of generation and removal, the excess carriers can be removed by annealing above 800 o C. The radiation damage responsible for generation of excess carriers is fairly thermostable in the range of annealing temperatures below 800 o C. From deep-level transient spectroscopy measurements, it is found that the radiation damage remains insensitive to changes in carrier concentration. The activation energies of excess carrier generation and removal are estimated from the analysis of the thermal and temporal behaviours of radiation damage in the annealing process. (Author)

Nanoscale investigation on Pseudomonas aeruginosa biofilm formed on porous silicon using atomic force microscopy.

Science.gov (United States)

Kannan, Ashwin; Karumanchi, Subbalakshmi Latha; Krishna, Vinatha; Thiruvengadam, Kothai; Ramalingam, Subramaniam; Gautam, Pennathur

2014-01-01

Colonization of surfaces by bacterial cells results in the formation of biofilms. There is a need to study the factors that are important for formation of biofilms since biofilms have been implicated in the failure of semiconductor devices and implants. In the present study, the adhesion force of biofilms (formed by Pseudomonas aeruginosa) on porous silicon substrates of varying surface roughness was quantified using atomic force microscopy (AFM). The experiments were carried out to quantify the effect of surface roughness on the adhesion force of biofilm. The results show that the adhesion force increased from 1.5 ± 0.5 to 13.2 ± 0.9 nN with increase in the surface roughness of silicon substrate. The results suggest that the adhesion force of biofilm is affected by surface roughness of substrate. © 2014 Wiley Periodicals, Inc.

Atomic and electronic structures of novel silicon surface structures

Energy Technology Data Exchange (ETDEWEB)

Terry, J.H. Jr.

1997-03-01

The modification of silicon surfaces is presently of great interest to the semiconductor device community. Three distinct areas are the subject of inquiry: first, modification of the silicon electronic structure; second, passivation of the silicon surface; and third, functionalization of the silicon surface. It is believed that surface modification of these types will lead to useful electronic devices by pairing these modified surfaces with traditional silicon device technology. Therefore, silicon wafers with modified electronic structure (light-emitting porous silicon), passivated surfaces (H-Si(111), Cl-Si(111), Alkyl-Si(111)), and functionalized surfaces (Alkyl-Si(111)) have been studied in order to determine the fundamental properties of surface geometry and electronic structure using synchrotron radiation-based techniques.

Effects of Atomic Oxygen and Grease on Outgassing and Adhesion of Silicone Elastomers for Space Applications

Science.gov (United States)

de Groh, Henry C.; Puleo, Bernadette J.; Steinetz, Bruce M.

An investigation of silicone elastomers for seals used in docking and habitat systems for future space exploration vehicles is being conducted at NASA. For certain missions, NASA is considering androgynous docking systems where two vehicles each having a seal would be required to: dock for a period of time, seal effectively, and then separate with minimum push-off forces for undocking. Silicone materials are generally chosen for their wide operating temperatures and low leakage rates. However silicone materials are often sticky and usually exhibit considerable adhesion when mated against metals and silicone surfaces. This paper investigates the adhesion unit pressure for a space rated silicone material (S0383-70) for either seal-on-seal (SoS) or seal-on-aluminum (SoAl) operation modes in the following conditions: as-received, after ground-based atomic-oxygen (AO) pre-treatment, after application of a thin coating of a space-qualified grease (Braycote 601EF), and after a combination of AO pre-treatment and grease coating. In order of descending adhesion reduction, the AO treatment reduced seal adhesion the most, followed by the AO plus grease pre-treatment, followed by the grease treatment. The effects of various treatments on silicone (S0383-70 and ELA-SA-401) outgassing properties were also investigated. The leading adhesion AO pre-treatment reduction led to a slight decrease in outgassing for the S0383-70 material and virtually no change in ELA-SA-401 outgassing.

Atomic scale simulations of hydrogen implantation defects in hydrogen implanted silicon - smart Cut technology

International Nuclear Information System (INIS)

Bilteanu, L.

2010-12-01

The topic of this thesis is related to the implantation step of the SmartCut TM technology. This technology uses hydrogen in order to transfer silicon layers on insulating substrates. The transfer is performed through a fracture induced by the formation of bidimensional defects well known in literature as 'platelets'. More exactly, we have studied within this thesis work the defects appearing in the post implant state and the evolution of the implantation damage towards a state dominated by platelets. The study is organised into two parts: in the first part we present the results obtained by atomic scale simulations while in the second part we present an infrared spectroscopy study of the evolution of defects concentrations after annealing at different temperatures. The atomic scale simulations have been performed within the density functional theory and they allowed us to compute the formation energies and the migration and recombination barriers. The defects included in our study are: the atomic and diatomic interstitials, the hydrogenated vacancies and multi-vacancies and the several platelets models. The obtained energies allowed us to build a stability hierarchy for these types of defects. This scheme has been confronted with some infrared analysis on hydrogen implanted silicon samples (37 keV) in a sub-dose regime which does not allow usually the formation of platelets during the implantation step. The analysis of the infrared data allowed the detailed description of the defects concentration based on the behaviour of peaks corresponding to the respective defects during annealing. The comparison between these evolutions and the energy scheme obtained previously allowed the validation of an evolution scenario of defects towards the platelet state. (author)

Recovering phosphorus and uranium values from phosphate rock

Energy Technology Data Exchange (ETDEWEB)

Sze, M C.Y.; Long, R H

1981-02-11

Phosphate rock is acidulated with aqueous nitric acid to produce an aqueous solution containing phosphate values, calcium and uranium values. The aqueous solution is contacted with an extraction solvent for the uranium values: the extraction solvent comprising a water immiscible organic diluent, a dialkyl phosphoric acid having at least 10 carbon atoms, and an organic phosphorus compound having the formula R/sub 1/ R/sub 2/ R/sub 3/ P = O where R/sub 1/, R/sub 2/ and R/sub 3/ are each either alkyl or alkoxy, the organic phosphorus compound having at least 10 carbon atoms. The uranium values are then recovered from the extraction solvent. In an example the extraction solvent is HDEHP and TOPO in kerosene.

Plasma-enhanced atomic-layer-deposited MoO{sub x} emitters for silicon heterojunction solar cells

Energy Technology Data Exchange (ETDEWEB)

Ziegler, Johannes; Schneider, Thomas; Sprafke, Alexander N. [Martin-Luther-University Halle-Wittenberg, mu-MD Group, Institute of Physics, Halle (Germany); Mews, Mathias; Korte, Lars [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Institute for Silicon-Photovoltaics, Berlin (Germany); Kaufmann, Kai [Fraunhofer Center for Silicon Photovoltaics CSP, Halle (Germany); University of Applied Sciences, Hochschule Anhalt Koethen, Koethen (Germany); Wehrspohn, Ralf B. [Martin-Luther-University Halle-Wittenberg, mu-MD Group, Institute of Physics, Halle (Germany); Fraunhofer Institute for Mechanics of Materials IWM Halle, Halle (Germany)

2015-09-15

A method for the deposition of molybdenum oxide (MoO{sub x}) with high growth rates at temperatures below 200 C based on plasma-enhanced atomic layer deposition is presented. The stoichiometry of the over-stoichiometric MoO{sub x} films can be adjusted by the plasma parameters. First results of these layers acting as hole-selective contacts in silicon heterojunction solar cells are presented and discussed. (orig.)

A Hierarchical Phosphorus Nanobarbed Nanowire Hybrid: Its Structure and Electrochemical Properties.

Science.gov (United States)

Zhao, Dan; Li, Beibei; Zhang, Jinying; Li, Xin; Xiao, Dingbin; Fu, Chengcheng; Zhang, Lihui; Li, Zhihui; Li, Jun; Cao, Daxian; Niu, Chunming

2017-06-14

Nanostructured phosphorus-carbon composites are promising materials for Li-ion and Na-ion battery anodes. A hierarchical phosphorus hybrid, SiC@graphene@P, has been synthesized by the chemical vapor deposition of phosphorus on the surfaces of barbed nanowires, where the barbs are vertically grown graphene nanosheets and the cores are SiC nanowires. A temperature-gradient vaporization-condensation method has been used to remove the unhybridized phosphorus particles formed by homogeneous nucleation. The vertically grown barb shaped graphene nanosheets and a high concentration of edge carbon atoms induced a fibrous red phosphorus (f-RP) growth with its {001} planes in parallel to {002} planes of nanographene sheets and led to a strong interpenetrated interface interaction between phosphorus and the surfaces of graphene nanosheets. This hybridization has been demonstrated to significantly enhance the electrochemical performances of phosphorus.

Phosphorus diffusion with the help of the solid planar source in the manufacturing of the integrated circuits

Directory of Open Access Journals (Sweden)

B. A. Shangereeva

2008-02-01

Full Text Available The results of the development and realization of the basic process of the phosphorus diffusion for the formation of the active region of the power silicon transistor have been considered. It is shown that the obtained optimum technological conditions of the phosphorus diffusion using solid planar source allow to get the transistors with improved electrophysical parameters.

Ion-induced Auger electron spectroscopy: a new detection method for compositional homogeneities of alloyed atoms in silicon

Energy Technology Data Exchange (ETDEWEB)

Hiraki, A [Osaka Univ., Japan; Imura, T; Iwami, M; Kim, S C; Ushita, K; Okamoto, H; Hamakawa, Y

1979-09-01

Auger spectra of Si LMM transitions induced by keV Ar/sup +/ ion bombardment of Si alloy systems have been studied. The spectra observed are composed of two well-defined peaks termed elsewhere the atomic-like and bulk-like peaks, repsectively. A clear correlation has been found between the intensity of the atomic-like peak lying at 88 eV and the content of the foreign atoms alloyed with Si. Experiments were carried out on metallic silicides, or Si alloys with Au, Cu, Pd and Ni, and covalently bonded non-metallic Si alloys of C and H. From these studies, we propose that ion-induced Auger electron spectroscopy might be a useful tool for the determination of alloyed foreign atoms as well as for the study of their compositional homogeneity in binary alloy systems of silicon.

Effect of neutron irradiation on p-type silicon

International Nuclear Information System (INIS)

Sopko, B.

1973-01-01

The possibilities are discussed of silicon isotope reactions with neutrons of all energies. In the reactions, 30 Si is converted to a stable phosphorus isotope forming n-type impurities in silicon. The above reactions proceed as a result of thermal neutron irradiation. An experiment is reported involving irradiation of two p-type silicon single crystals having a specific resistance of 2000 ohm.cm and 5000 to 20 000 ohm.cm, respectively, which changed as a result of irradiation into n-type silicon with a given specific resistance. The specific resistance may be pre-calculated from the concentration of impurities and the time of irradiation. The effects of irradiation on other silicon parameters and thus on the suitability of silicon for the manufacture of semiconductor elements are discussed. (J.K.)

The relative stabilities of cyclic dicationic derivatives of diphosphanes with three (3P) or four (4P) linked phosphorus atoms.

Science.gov (United States)

Bashforth, Rachel; Boyall, Alice J; Coffer, Philippa K; Dillon, Keith B; Goeta, Andrés E; Howard, Judith A K; Kenwright, Alan M; Probert, Michael R; Shepherd, Helena J; Thompson, Amber L

2012-01-28

Reaction of a diphosphane with a chlorophosphane in the presence of SnCl(2) or AlCl(3) leads to the formation of dicationic heterocycles with three (3P) or four (4P) linked phosphorus atoms. Some 3P derivatives with small alkyl substituents may also be prepared by direct alkylation of cyclic triphosphenium ions. Several new species were prepared in solution, some of which were isolated and characterised by single-crystal X-ray diffraction. Investigations into the factors favouring formation of 3P or 4P species are described.

Absorption spectrum of neutral phosphorus (P I) in the range 7700-8256 A

International Nuclear Information System (INIS)

Deng Lunhua; Li Chuanliang; Zhang Junli; Yang Xiaohua; Chen Yangqin

2010-01-01

The absorption spectrum of neutral phosphorus was recorded in the range 7700-8256 A using optical heterodyne magnetic rotation concentration modulation spectroscopy with a tunable Ti:sapphire laser as the light source. Phosphorus atoms were excited by discharging the mixed gases of phosphorus vapor and neon gas. The phosphorus vapor was prepared by heating white phosphorus chips placed on a cylindrical copper electrode during discharge. In total, 234 lines of P I were observed, of which 127 were assigned. The transition frequencies were obtained with an uncertainty of 0.007 cm -1 . Empirical line intensities were provided covering four orders of magnitude.

Absorption spectrum of neutral phosphorus (P I) in the range 7700-8256 Å

Science.gov (United States)

Deng, Lunhua; Li, Chuanliang; Zhang, Junli; Yang, Xiaohua; Chen, Yangqin

2010-12-01

The absorption spectrum of neutral phosphorus was recorded in the range 7700-8256 Å using optical heterodyne magnetic rotation concentration modulation spectroscopy with a tunable Ti:sapphire laser as the light source. Phosphorus atoms were excited by discharging the mixed gases of phosphorus vapor and neon gas. The phosphorus vapor was prepared by heating white phosphorus chips placed on a cylindrical copper electrode during discharge. In total, 234 lines of P I were observed, of which 127 were assigned. The transition frequencies were obtained with an uncertainty of 0.007 cm-1. Empirical line intensities were provided covering four orders of magnitude.

Pt thermal atomic layer deposition for silicon x-ray micropore optics.

Science.gov (United States)

Takeuchi, Kazuma; Ezoe, Yuichiro; Ishikawa, Kumi; Numazawa, Masaki; Terada, Masaru; Ishi, Daiki; Fujitani, Maiko; Sowa, Mark J; Ohashi, Takaya; Mitsuda, Kazuhisa

2018-04-20

We fabricated a silicon micropore optic using deep reactive ion etching and coated by Pt with atomic layer deposition (ALD). We confirmed that a metal/metal oxide bilayer of Al 2 O 3 ∼10  nm and Pt ∼20  nm was successfully deposited on the micropores whose width and depth are 20 μm and 300 μm, respectively. An increase of surface roughness of sidewalls of the micropores was observed with a transmission electron microscope and an atomic force microscope. X-ray reflectivity with an Al Kα line at 1.49 keV before and after the deposition was measured and compared to ray-tracing simulations. The surface roughness of the sidewalls was estimated to increase from 1.6±0.2  nm rms to 2.2±0.2  nm rms. This result is consistent with the microscope measurements. Post annealing of the Pt-coated optic at 1000°C for 2 h showed a sign of reduced surface roughness and better angular resolution. To reduce the surface roughness, possible methods such as the annealing after deposition and a plasma-enhanced ALD are discussed.

Coupled electronic and atomic effects on defect evolution in silicon carbide under ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yanwen [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Xue, Haizhou [Univ. of Tennessee, Knoxville, TN (United States); Zarkadoula, Eva [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Sachan, Ritesh [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Army Research Office, Triangle Park, NC (United States); Ostrouchov, Christopher [Univ. of Tennessee, Knoxville, TN (United States); Liu, Peng [Univ. of Tennessee, Knoxville, TN (United States); Shandong Univ., Jinan (China); Wang, Xue -lin [Shandong Univ., Jinan (China); Zhang, Shuo [Lanzhou Univ., Gansu Province (China); Wang, Tie Shan [Lanzhou Univ., Gansu Province (China); Weber, William J. [Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

2017-10-16

Understanding energy dissipation processes in electronic/atomic subsystems and subsequent non-equilibrium defect evolution is a long-standing challenge in materials science. In the intermediate energy regime, energetic particles simultaneously deposit a significant amount of energy to both electronic and atomic subsystems of silicon carbide (SiC). Here we show that defect evolution in SiC closely depends on the electronic-to-nuclear energy loss ratio (S_e/S_n), nuclear stopping powers (dE/dx_nucl), electronic stopping powers (dE/dx_ele), and the temporal and spatial coupling of electronic and atomic subsystem for energy dissipation. The integrated experiments and simulations reveal that: (1) increasing S_e/S_n slows damage accumulation; (2) the transient temperatures during the ionization-induced thermal spike increase with dE/dx_ele, which causes efficient damage annealing along the ion trajectory; and (3) for more condensed displacement damage within the thermal spike, damage production is suppressed due to the coupled electronic and atomic dynamics. Ionization effects are expected to be more significant in materials with covalent/ionic bonding involving predominantly well-localized electrons. Here, insights into the complex electronic and atomic correlations may pave the way to better control and predict SiC response to extreme energy deposition

Changes in water quality of the River Frome (UK) from 1965 to 2009: Is phosphorus mitigation finally working?

Energy Technology Data Exchange (ETDEWEB)

Bowes, M.J., E-mail: mibo@ceh.ac.uk [Centre for Ecology and Hydrology, Maclean Building, Crowmarsh Gifford, Wallingford, Oxfordshire, OX10 8BB (United Kingdom); Smith, J.T. [School of Earth and Environmental Sciences, Burnaby Building, University of Portsmouth, Portsmouth PO1 3QL (United Kingdom); Neal, C. [Centre for Ecology and Hydrology, Maclean Building, Crowmarsh Gifford, Wallingford, Oxfordshire, OX10 8BB (United Kingdom); Leach, D.V. [formally Centre for Ecology and Hydrology, Winfrith Technology Centre, Dorchester, Dorset, DT2 8ZD (United Kingdom); Scarlett, P.M.; Wickham, H.D.; Harman, S.A.; Armstrong, L.K. [Centre for Ecology and Hydrology, Maclean Building, Crowmarsh Gifford, Wallingford, Oxfordshire, OX10 8BB (United Kingdom); Davy-Bowker, J. [Freshwater Biological Association, River Laboratory, East Stoke, Wareham, Dorset, BH20 6BB (United Kingdom); Haft, M. [Freshwater Biological Association, Ferry Landing, Far Sawrey, Ambleside, Cumbria, LA22 0LP (United Kingdom); Davies, C.E. [Centre for Ecology and Hydrology, Maclean Building, Crowmarsh Gifford, Wallingford, Oxfordshire, OX10 8BB (United Kingdom)

2011-08-15

The water quality of the River Frome, Dorset, southern England, was monitored at weekly intervals from 1965 until 2009. Determinands included phosphorus, nitrogen, silicon, potassium, calcium, sodium, magnesium, pH, alkalinity and temperature. Nitrate-N concentrations increased from an annual average of 2.4 mg l{sup -1} in the mid to late 1960s to 6.0 mg l{sup -1} in 2008-2009, but the rate of increase was beginning to slow. Annual soluble reactive phosphorus (SRP) concentrations increased from 101 {mu}g l{sup -1} in the mid 1960s to a maximum of 190 {mu}g l{sup -1} in 1989. In 2002, there was a step reduction in SRP concentration (average = 88 {mu}g l{sup -1} in 2002-2005), with further improvement in 2007-2009 (average = 49 {mu}g l{sup -1}), due to the introduction of phosphorus stripping at sewage treatment works. Phosphorus and nitrate concentrations showed clear annual cycles, related to the timing of inputs from the catchment, and within-stream bioaccumulation and release. Annual depressions in silicon concentration each spring (due to diatom proliferation) reached a maximum between 1980 and 1991, (the period of maximum SRP concentration) indicating that algal biomass had increased within the river. The timing of these silicon depressions was closely related to temperature. Excess carbon dioxide partial pressures (EpCO{sub 2}) of 60 times atmospheric CO{sub 2} were also observed through the winter periods from 1980 to 1992, when phosphorus concentration was greatest, indicating very high respiration rates due to microbial decomposition of this enhanced biomass. Declining phosphorus concentrations since 2002 reduced productivity and algal biomass in the summer, and EpCO{sub 2} through the winter, indicating that sewage treatment improvements had improved riverine ecology. Algal blooms were limited by phosphorus, rather than silicon concentration. The value of long-term water quality data sets is discussed. The data from this monitoring programme are made

High yield silicon carbide from alkylated or arylated pre-ceramic polymer

International Nuclear Information System (INIS)

Baney, R.H.; Gaul, J.H.

1982-01-01

Alkylated or arylated methylpolysilanes which exhibit ease of handling and are used to obtain silicon carbide ceramic materials in high yields contain 0 to 60 mole percent (CH 3 ) 2 Si double bond units and 40 to 100 mole percent CH 3 Si triple bond units, wherein there is also bonded to the silicon atoms other silicon atoms and additional alkyl radicals of 1 to 4 carbon atoms or phenyl. They may be prepared by reaction of a Grignard reagent RMgX, where X is halogen and R is Csub(1-4)-alkyl or phenyl, with a starting material which is a solid at 25 0 C, and is identical to the product except that the remaining bonds on the silicon atoms are attached to another silicon atom, or a chlorine or a bromine atom. Ceramics result from heating the polysilane products to 1200 0 C, optionally with fillers. (author)

Atomic force microscopy-based repeated machining theory for nanochannels on silicon oxide surfaces

Energy Technology Data Exchange (ETDEWEB)

Wang, Z.Q., E-mail: wangzhiqian@sia.cn [State Key Laboratory of Robotics, Shenyang Institute of Automation, CAS, Shenyang 110016 (China); Graduate University of the Chinese Academy of Sciences, Beijing 100049 (China); Jiao, N.D. [State Key Laboratory of Robotics, Shenyang Institute of Automation, CAS, Shenyang 110016 (China); Tung, S. [Department of Mechanical Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Dong, Z.L. [State Key Laboratory of Robotics, Shenyang Institute of Automation, CAS, Shenyang 110016 (China)

2011-02-01

The atomic force microscopy (AFM)-based repeated nanomachining of nanochannels on silicon oxide surfaces is investigated both theoretically and experimentally. The relationships of the initial nanochannel depth vs. final nanochannel depth at a normal force are systematically studied. Using the derived theory and simulation results, the final nanochannel depth can be predicted easily. Meanwhile, if a nanochannel with an expected depth needs to be machined, a right normal force can be selected simply and easily in order to decrease the wear of the AFM tip. The theoretical analysis and simulation results can be effectively used for AFM-based fabrication of nanochannels.

Extended Fenske-Hall LCAO MO calculations of core-level shifts in solid P compounds

Science.gov (United States)

Franke, R.; Chassé, T.; Reinhold, J.; Streubel, P.; Szargan, R.

1997-08-01

Extended Fenske-Hall LCAO-MO ΔSCF calculations on solids modelled as H-pseudoatom saturated clusters are reported. The computational results verify the experimentally obtained initial-state (effective atomic charges, Madelung potential) and relaxation-energy contributions to the XPS phosphorus core-level binding energy shifts measured in Na 3PO 3S, Na 3PO 4, Na 2PO 3F and NH 4PF 6 in reference to red phosphorus. It is shown that the different initial-state contributions observed in the studied phosphates are determined by local and nonlocal terms while the relaxation-energy contributions are mainly dependent on the nature of the nearest neighbors of the phosphorus atom.

Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

OpenAIRE

K?nig, Dirk; Hiller, Daniel; Gutsch, Sebastian; Zacharias, Margit; Smith, Sean

2017-01-01

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusi...

Controlled ion-beam transformation of silicon bipolar microwave power transistor's characteristics

International Nuclear Information System (INIS)

Solodukha, V.A.; Snitovskij, Yu.P.

2015-01-01

In this article, a method for changing the silicon bipolar microwave power transistor's characteristics in a direct and deliberate manner by modifying the chemical composition at the molybdenum - silicon boundary, the electro-physical properties of molybdenum - silicon contacts, and the electrophysical characteristics of transistor structure areas by the phosphorus ions irradiation of generated ohmic molybdenum - silicon contacts to the transistor emitters is proposed for the first time. The possibilities of this method are investigated and confirmed experimentally. (authors)

Suppressing segregation in highly phosphorus doped silicon monolayers

NARCIS (Netherlands)

Keizer, Joris; Kölling, Sebastian; Koenraad, Paul; Simmons, Michelle Y.

2015-01-01

Sharply defined dopant profiles and low resistivity are highly desired qualities in the microelectronic industry, and more recently, in the development of an all epitaxial Si:P based quantum computer. In this work, we use thin (monolayers thick) room temperature grown silicon layers, so-called

Process research of non-CZ silicon material

Science.gov (United States)

Campbell, R. B.

1984-01-01

Advanced processing techniques for non-CZ silicon sheet material that might improve the cost effectiveness of photovoltaic module production were investigated. Specifically, the simultaneous diffusion of liquid boron and liquid phosphorus organometallic precursors into n-type dendritic silicon web was examined. The simultaneous junction formation method for solar cells was compared with the sequential junction formation method. The electrical resistivity of the n-n and p-n junctions was discussed. Further research activities for this program along with a program documentation schedule are given.

The effect of phosphorus on creep in copper

International Nuclear Information System (INIS)

Sandstroem, Rolf; Andersson, Henrik C.M.

2008-01-01

Pure copper with an addition of about 50 ppm phosphorus is the planned material for the outer part of the waste package for spent nuclear fuel in Sweden. Phosphorus is added to improve the creep ductility but it also strongly increases the creep strength. In the present paper the influence of phosphorus on the strength properties of copper is analysed. Using the Labusch-Nabarro model it is demonstrated that 50 ppm has a negligible influence on the yield strength in accordance with observations. For slow moving dislocations, the interaction energy between the P-atoms and the dislocations gives rise to an agglomeration and a locking. The computed break away stresses are in agreement with the difference in creep stress of copper with and without P-additions

Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells.

Science.gov (United States)

Uzum, Abdullah; Fukatsu, Ken; Kanda, Hiroyuki; Kimura, Yutaka; Tanimoto, Kenji; Yoshinaga, Seiya; Jiang, Yunjian; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ito, Seigo

2014-01-01

The phosphorus barrier layers at the doping procedure of silicon wafers were fabricated using a spin-coating method with a mixture of silica-sol and tetramethylammonium hydroxide, which can be formed at the rear surface prior to the front phosphorus spin-on-demand (SOD) diffusion and directly annealed simultaneously with the front phosphorus layer. The optimization of coating thickness was obtained by changing the applied spin-coating speed; from 2,000 to 8,000 rpm. The CZ-Si p-type silicon solar cells were fabricated with/without using the rear silica-sol layer after taking the sheet resistance measurements, SIMS analysis, and SEM measurements of the silica-sol material evaluations into consideration. For the fabrication of solar cells, a spin-coating phosphorus source was used to form the n(+) emitter and was then diffused at 930°C for 35 min. The out-gas diffusion of phosphorus could be completely prevented by spin-coated silica-sol film placed on the rear side of the wafers coated prior to the diffusion process. A roughly 2% improvement in the conversion efficiency was observed when silica-sol was utilized during the phosphorus diffusion step. These results can suggest that the silica-sol material can be an attractive candidate for low-cost and easily applicable spin-coating barrier for any masking purpose involving phosphorus diffusion.

Electronic structure of deep levels in silicon. A study of gold, magnesium, and iron centers in silicon

International Nuclear Information System (INIS)

Thilderkvist, A. L.

1994-02-01

The electronic structure of gold, magnesium and iron related deep centers in silicon is investigated. Their deep and shallow levels are studied by means of fourier transform spectroscopy, combined with uniaxial stress and Zeeman spectroscopy. The neutral substitutional gold center in silicon is investigated and the center is paramagnetic, S=1/2, with g||≅2.8 and g≅0, and has a static distortion. Reorientation between different equivalent distortions is observed even at 1.9 K. A gold pair center in silicon is studied and several line series, with a zero-phonon line followed by several phonon replicas, are observed. Uniaxial stress and Zeeman results reveal a trigonal symmetry of the center, which together with the high dissociation energy of 1.7 eV suggests that the center consists of two nearest-neighbor substitutional gold atoms. A divacancy model is employed to explain the electronic properties of the center. The interstitial magnesium double donor in silicon in its two charge states Mg o and Mg + is investigated. Deviations in the binding energies of the excited states from those calculated within the effective-mass theory (EMT) are found and explained by a perturbation in the central-cell region. The quadratic Zeeman effect of shallow donors in silicon is analyzed within the framework of the EMT using a numerical approach. The wave functions are calculated in a discrete radial mesh and the Zeeman Hamiltonian has be evaluated for the lowest excited states for fields up to 6 T. The neutral interstitial iron defect in silicon gives rise to two sets of line spectra. The first set arises when an electron is excited to a shallow donor like state where the electron is decoupled from the Fe + core which has a 4 T 1 ground state term. The second set arises when an excited electron of a 1 symmetry is coupled by exchange interaction to the core, yielding at 5 T 1 final state. Experiments determine the multiplet splitting of the 4 T 1 and 5 T 1 states due to spring

Surface passivation of n-type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks

Science.gov (United States)

van de Loo, B. W. H.; Ingenito, A.; Verheijen, M. A.; Isabella, O.; Zeman, M.; Kessels, W. M. M.

2017-06-01

Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that charge-carrier recombination at particularly highly n-type doped black Si surfaces is further suppressed. In this work, this issue is addressed through systematically studying lowly and highly doped b-Si surfaces, which are passivated by atomic-layer-deposited Al2O3 films or SiO2/Al2O3 stacks. In lowly doped b-Si textures, a very low surface recombination prefactor of 16 fA/cm2 was found after surface passivation by Al2O3. The excellent passivation was achieved after a dedicated wet-chemical treatment prior to surface passivation, which removed structural defects which resided below the b-Si surface. On highly n-type doped b-Si, the SiO2/Al2O3 stacks result in a considerable improvement in surface passivation compared to the Al2O3 single layers. The atomic-layer-deposited SiO2/Al2O3 stacks therefore provide a low-temperature, industrially viable passivation method, enabling the application of highly n- type doped b-Si nanotextures in industrial silicon solar cells.

Two different carbon-hydrogen complexes in silicon with closely spaced energy levels

Energy Technology Data Exchange (ETDEWEB)

Stübner, R., E-mail: ronald.stuebner@physik.tu-dresden.de, E-mail: kolkov@ifpan.edu.pl; Kolkovsky, Vl., E-mail: ronald.stuebner@physik.tu-dresden.de, E-mail: kolkov@ifpan.edu.pl; Weber, J. [Technische Universität Dresden, Institut für Angewandte Physik, 01062 Dresden (Germany)

2015-08-07

An acceptor and a single donor state of carbon-hydrogen defects (CH{sub A} and CH{sub B}) are observed by Laplace deep level transient spectroscopy at 90 K. CH{sub A} appears directly after hydrogenation by wet chemical etching or hydrogen plasma treatment, whereas CH{sub B} can be observed only after a successive annealing under reverse bias at about 320 K. The activation enthalpies of these states are 0.16 eV for CH{sub A} and 0.14 eV for CH{sub B}. Our results reconcile previous controversial experimental results. We attribute CH{sub A} to the configuration where substitutional carbon binds a hydrogen atom on a bond centered position between carbon and the neighboring silicon and CH{sub B} to another carbon-hydrogen defect.

Local photoconductivity of microcrystalline silicon thin films measured by conductive atomic force microscopy

Energy Technology Data Exchange (ETDEWEB)

Ledinsky, Martin; Fejfar, Antonin; Vetushka, Aliaksei; Stuchlik, Jiri; Rezek, Bohuslav; Kocka, Jan [Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i. Cukrovarnicka 10, 162 00 Praha 6 (Czech Republic)

2011-11-15

Local currents measured under standard conductive atomic force microscopy (C-AFM) conditions on microcrystalline silicon ({mu}c-Si:H) thin films were studied. It was shown that the AFM detection diode illuminating the AFM cantilever (see the figure on the right side) 100 x enhanced the current flows through the photosensitive {mu}c-Si:H layer. The local current map and current-voltage characteristics were measured under dark conditions. This study enables mapping of both the dark current and photocurrent. C-AFM cantilever illuminated by the detection diode during measurement on {mu}c-Si:H thin film. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Nearest neighbors EPR superhyperfine interaction in divalent iridium complexes in alkali halide host lattice

International Nuclear Information System (INIS)

Pinhal, N.M.; Vugman, N.V.

1983-01-01

Further splitting of chlorine superhyperfine lines on the EPR spectrum of the [Ir (CN) 4 Cl 2 ] 4 - molecular species in NaCl latice indicates a super-superhyperfine interaction with the nearest neighbors sodium atoms. (Author) [pt

A Space Experiment to Measure the Atomic Oxygen Erosion of Polymers and Demonstrate a Technique to Identify Sources of Silicone Contamination

Science.gov (United States)

Banks, Bruce A.; deGroh, Kim K.; Baney-Barton, Elyse; Sechkar, Edward A.; Hunt, Patricia K.; Willoughby, Alan; Bemer, Meagan; Hope, Stephanie; Koo, Julie; Kaminski, Carolyn;

Atomic state and characterization of nitrogen at the SiC/SiO2 interface

International Nuclear Information System (INIS)

Xu, Y.; Garfunkel, E. L.; Zhu, X.; Lee, H. D.; Xu, C.; Shubeita, S. M.; Gustafsson, T.; Ahyi, A. C.; Sharma, Y.; Williams, J. R.; Lu, W.; Ceesay, S.; Tuttle, B. R.; Pantelides, S. T.; Wan, A.; Feldman, L. C.

2014-01-01

We report on the concentration, chemical bonding, and etching behavior of N at the SiC(0001)/SiO 2 interface using photoemission, ion scattering, and computational modeling. For standard NO processing of a SiC MOSFET, a sub-monolayer of nitrogen is found in a thin inter-layer between the substrate and the gate oxide (SiO 2 ). Photoemission shows one main nitrogen related core-level peak with two broad, higher energy satellites. Comparison to theory indicates that the main peak is assigned to nitrogen bound with three silicon neighbors, with second nearest neighbors including carbon, nitrogen, and oxygen atoms. Surprisingly, N remains at the surface after the oxide was completely etched by a buffered HF solution. This is in striking contrast to the behavior of Si(100) undergoing the same etching process. We conclude that N is bound directly to the substrate SiC, or incorporated within the first layers of SiC, as opposed to bonding within the oxide network. These observations provide insights into the chemistry and function of N as an interface passivating additive in SiC MOSFETs

Application of methane as a gaseous modifier for the determination of silicon using electrothermal atomic absorption spectrometry

Energy Technology Data Exchange (ETDEWEB)

Heinrich, Hans-Joachim, E-mail: hans-joachim.heinrich@bam.de; Kipphardt, Heinrich

2012-04-15

For determination of silicon in aqueous solutions by electrothermal atomic absorption spectrometry methane/argon mixtures as a gaseous modifier were applied during the pyrolysis step to improve the analytical performance. The beneficial effects observed on thermal stabilization, signal enhancement and shape of absorbance signals were attributed to the thermal decomposition products of methane, which were hydrogen and carbon black (soot). Using a 5% CH{sub 4} mixture with argon, the optimized pyrolysis and atomization temperatures were 1350 Degree-Sign C and 2450 Degree-Sign C, respectively. A flushing step following the pyrolysis was mandatory to avoid background absorption and accelerated deposition of pyrolytic graphite. Characteristic masses of 50 and 30 pg were obtained for standard transversely heated graphite atomizer (THGA) tubes and end-capped THGA tubes, respectively, which were lower than with other previously applied modifiers. A limit of detection of 0.2 {mu}g L{sup -1} (3 s, n = 10) has been obtained. In addition, this gaseous modifier did not contribute to contamination which often was significant when a liquid modifier solution was co-injected. The proposed method has been applied to the determination of silicon in ultrapure water, nitric and hydrochloric acids. - Highlights: Black-Right-Pointing-Pointer CH{sub 4}/Ar gas mixtures act as new modifier in the determination of Si using ET AAS. Black-Right-Pointing-Pointer CH{sub 4} improved thermal stabilization, atomization efficiency and signal shape of Si. Black-Right-Pointing-Pointer Optimum performance by addition of 5% CH{sub 4} during pyrolysis at 1350 Degree-Sign C. Black-Right-Pointing-Pointer Gaseous modifier does not contribute to blank values. Black-Right-Pointing-Pointer Optimized method suitable for determination of Si in ultrapure reagents.

Defects and impurities in silicon materials an introduction to atomic-level silicon engineering

CERN Document Server

Langouche, Guido

2015-01-01

This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.

The paradox of characteristics of silicon detectors operated at temperature close to liquid helium

Science.gov (United States)

Eremin, V.; Shepelev, A.; Verbitskaya, E.; Zamantzas, C.; Galkin, A.

2018-05-01

The aim of this study is to give characterization of silicon p+/n/n+ detectors for the monitoring systems of the Large Hadron Collider machine at CERN with the focus on justifying the choice of silicon resistivity for the detector operation at the temperature of 1.9-10 K. The detectors from n-type silicon with the resistivity of 10, 4.5, and 0.5 kΩ cm were investigated at the temperature from 293 up to 7 K by the Transient Current Technique with a 660 nm pulse laser and alpha-particles. The shapes of the detector current pulse response allowed revealing a paradox in the properties of shallow donors of phosphorus, i.e., native dopants in the n-type Si. There was no carrier freeze-out on the phosphorus energy levels in the space charge region (SCR), and they remained positively charged irrespective of temperature, thus limiting the depleted region depth. As for the base region of a partially depleted detector, the levels became neutral at T < 28 K, which transformed silicon to an insulator. The reduction of the activation energy for carrier emission in the detector SCR estimated in the scope of the Poole-Frenkel effect failed to account for the impact of the electric field on the properties of phosphorus levels. The absence of carrier freeze-out in the SCR justifies the choice of high resistivity silicon as the only proper material for detector operation in a fully depleted mode at extremely low temperature.

Negative differential resistance behavior in phosphorus-doped armchair graphene nanoribbon junctions

International Nuclear Information System (INIS)

Zhou, Yuhong; Zhang, Daoli; Zhang, Jianbing; Miao, Xiangshui; Ye, Cong

2014-01-01

In this present work, we investigate the electronic transport properties of phosphorus-doped armchair graphene nanoribbon (AGNR) junctions by employing nonequilibrium Green's functions in combination with the density-function theory. Two phosphorus (P) atoms are considered to substitute the central carbon atom with the different width of AGNRs. The results indicate that the electronic transport behaviors are strongly dependent on the width of the P-doped graphene nanoribbons. The current-voltage characteristics of the doped AGNR junctions reveal an interesting negative differential resistance (NDR) and exhibit three distinct family (3 n, 3 n + 1, 3 n + 2) behaviors. These results display that P doping is a very good way to achieve NDR of the graphene nanoribbon devices

Rapid determination of main components by means of flame-atomic-absorption spectrometry for chromium, silicon and tungsten in CrSiW materials

International Nuclear Information System (INIS)

Mueller, E.; Stahlberg, R.

1985-01-01

The application of Flame-Atomic-Absorption Spectrometry (FAAS) for determining chromium, silicon and tungsten in CrSiW materials is described. The FAAS determinations of the main components are shown under optimum conditions. Sufficient precision and reliability have been achieved for routine analysis. The application of a mixture of acids for preparing CrSiW solutions is proposed. The preparation of samples is discussed in detail. Optimum conditions are recommended for determining chromium, silicon and tungsten using one solution only. (orig.) [de

Density of oxidation-induced stacking faults in damaged silicon

NARCIS (Netherlands)

Kuper, F.G.; Hosson, J.Th.M. De; Verwey, J.F.

1986-01-01

A model for the relation between density and length of oxidation-induced stacking faults on damaged silicon surfaces is proposed, based on interactions of stacking faults with dislocations and neighboring stacking faults. The model agrees with experiments.

Mn-silicide nanostructures aligned on massively parallel silicon nano-ribbons

International Nuclear Information System (INIS)

De Padova, Paola; Ottaviani, Carlo; Ronci, Fabio; Colonna, Stefano; Quaresima, Claudio; Cricenti, Antonio; Olivieri, Bruno; Dávila, Maria E; Hennies, Franz; Pietzsch, Annette; Shariati, Nina; Le Lay, Guy

2013-01-01

The growth of Mn nanostructures on a 1D grating of silicon nano-ribbons is investigated at atomic scale by means of scanning tunneling microscopy, low energy electron diffraction and core level photoelectron spectroscopy. The grating of silicon nano-ribbons represents an atomic scale template that can be used in a surface-driven route to control the combination of Si with Mn in the development of novel materials for spintronics devices. The Mn atoms show a preferential adsorption site on silicon atoms, forming one-dimensional nanostructures. They are parallel oriented with respect to the surface Si array, which probably predetermines the diffusion pathways of the Mn atoms during the process of nanostructure formation.

Stable configurations of graphene on silicon

Energy Technology Data Exchange (ETDEWEB)

Javvaji, Brahmanandam; Shenoy, Bhamy Maithry [Department of Aerospace Engineering, Indian Institute of Science, Bangalore 560012 (India); Mahapatra, D. Roy, E-mail: droymahapatra@aero.iisc.ernet.in [Department of Aerospace Engineering, Indian Institute of Science, Bangalore 560012 (India); Ravikumar, Abhilash [Department of Metallurgical and Materials Engineering, National Institute of Technology Karnataka, Surathkal 575025 (India); Hegde, G.M. [Center for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012 (India); Rizwan, M.R. [Department of Metallurgical and Materials Engineering, National Institute of Technology Karnataka, Surathkal 575025 (India)

2017-08-31

Highlights: • Simulations of epitaxial growth process for silicon–graphene system is performed. • Identified the most favourable orientation of graphene sheet on silicon substrate. • Atomic local strain due to the silicon–carbon bond formation is analyzed. - Abstract: Integration of graphene on silicon-based nanostructures is crucial in advancing graphene based nanoelectronic device technologies. The present paper provides a new insight on the combined effect of graphene structure and silicon (001) substrate on their two-dimensional anisotropic interface. Molecular dynamics simulations involving the sub-nanoscale interface reveal a most favourable set of temperature independent orientations of the monolayer graphene sheet with an angle of ∽15° between its armchair direction and [010] axis of the silicon substrate. While computing the favorable stable orientations, both the translation and the rotational vibrations of graphene are included. The possible interactions between the graphene atoms and the silicon atoms are identified from their coordination. Graphene sheet shows maximum bonding density with bond length 0.195 nm and minimum bond energy when interfaced with silicon substrate at 15° orientation. Local deformation analysis reveals probability distribution with maximum strain levels of 0.134, 0.047 and 0.029 for 900 K, 300 K and 100 K, respectively in silicon surface for 15° oriented graphene whereas the maximum probable strain in graphene is about 0.041 irrespective of temperature. Silicon–silicon dimer formation is changed due to silicon–carbon bonding. These results may help further in band structure engineering of silicon–graphene lattice.

Numerical study of the atomic and electronic structure of some silicon grain boundaries

International Nuclear Information System (INIS)

Torrent, M.

1996-01-01

This work contributes to the theoretical study of extended defects in covalent materials. The study is especially devoted to the tilt grain boundaries in silicon as a model material. The theoretical model is based on the self-consistent tight-binding approximation and is applied within two numerical techniques: the fast 'order N' density-matrix method and the diagonalization technique which allows the sampling of the reciprocal space. Total energy parameters of the model have been fitted in order to reproduce the silicon band structure (with a correct gap value) and the transferability of crystalline and mechanical properties of this material. A new type of boundary conditions is proposed and tested. These conditions, named 'ante-periodic' or 'Moebius', allow only one grain boundary per box instead of two and decrease the CPU time by a factor of two. The model is then applied to the study of the Σ=25 [001] (710) grain boundary. The results show the possible presence in this boundary of low energy non-reconstructed atomic structures which are electrically active. This confirms what had been suggested by some experimental observations. The same study is also performed for the Σ=13 [001] (510) grain boundary. In order to compare the intrinsic electrical activity in the previous grain boundaries with the one induced by impurities, a total energy parametrization for the silicon-nickel bond is achieved and used in preliminary calculations. Finally the two variants of the Σ=11 [011] (2-33) interface are studied, especially their respective interfacial energies. The result disagrees with previous calculations using phenomenological potentials. (author)

Correlation between substrate bias, growth process and structural properties of phosphorus incorporated tetrahedral amorphous carbon films

International Nuclear Information System (INIS)

Liu Aiping; Zhu Jiaqi; Han Jiecai; Wu Huaping; Jia Zechun

2007-01-01

We investigate the growth process and structural properties of phosphorus incorporated tetrahedral amorphous carbon (ta-C:P) films which are deposited at different substrate biases by filtered cathodic vacuum arc technique with PH 3 as the dopant source. The films are characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy, Raman spectroscopy, residual stress measurement, UV/VIS/NIR absorption spectroscopy and temperature-dependent conductivity measurement. The atomic fraction of phosphorus in the films as a function of substrate bias is obtained by XPS analysis. The optimum bias for phosphorus incorporation is about -80 V. Raman spectra show that the amorphous structures of all samples with atomic-scaled smooth surface are not remarkably changed when PH 3 is implanted, but some small graphitic crystallites are formed. Moreover, phosphorus impurities and higher-energetic impinging ions are favorable for the clustering of sp 2 sites dispersed in sp 3 skeleton and increase the level of structural ordering for ta-C:P films, which further releases the compressive stress and enhances the conductivity of the films. Our analysis establishes an interrelationship between microstructure, stress state, electrical properties, and substrate bias, which helps to understand the deposition mechanism of ta-C:P films

Research and development of photovoltaic power system. Research on surface passivation for high-efficiency silicon solar cells; Taiyoko hatsuden system no kenkyu kaihatsu. Hyomen passivation no kenkyu

Energy Technology Data Exchange (ETDEWEB)

Saito, T [Tokyo Univ. of Agriculture and Technology, Tokyo (Japan). Faculty of Technology

1994-12-01

This paper reports the result obtained during fiscal 1994 on research on surface passivation of high-efficiency silicon solar cells. In research on carrier recombination on SiO2/doped silicon interface, measurements were carried out on minority carrier life with respect to p-type silicon substrates with which phosphorus with high and low concentrations are diffused uniformly on the surface and non-uniformly on the back and then oxidized. The measurements were performed for the purpose of evaluating the carrier recombination at p-n junctions. Effective life time of oxidized test samples increased longer than that of prior to the oxidization as a result of effect of surface passivation contributing remarkably. In research on reduction in carrier recombination on SiO2/Si interface by using H radical annealing, experiments were conducted by using a method that uses more active H-atoms. As a result, it was revealed that the reduction effect is recognized at as low temperature as 200{degree}C, and photo-bias effect is also noticeable. Other research activities included analytic research on minority carrier recombination on micro crystalline silicon/crystalline silicon interface, and experimental research on evaluation of minority carrier life of poly-crystalline silicon wafers. 6 figs.

Optimation of Nitrogen and Phosphorus in Azolla Growth as Biofertilizer

Directory of Open Access Journals (Sweden)

Hany Handajani

2013-03-01

Full Text Available Nitrogen is one of the most important minerals for living organisms. Azolla is known as a small water fern which can fix nitrogen through the symbiotic association with the blue green algae Anabaena. Experimental studies were carried out in the glass house, investigating the growth of Azolla using different levels of nitrogen and phosphorus in the media. The experiment used 12 treatments with 3 levels of nitrogen (0, 5, and 10 mg atom/L and 4 levels of phosphorus (0, 10, 20, and 30 mg atom/l in a factorial design with 3 replicates. The results show that the highest biomass for fresh weight (13.28 g, dry weight (1,126 g, and the fastest doubling time (7.71 days were found in combination of 10 mg atom/L N and 30 mg atom/L P. Meanwhile, the highest protein content was found in combination of 5 mg atom/L N and 20 mg atom/L P. After the third day heterocyst cells in Anabaena could only be found in those two combinations, but the highest heterocyst cells was found in the lower N and P combination similar to the highest protein content. Further experiment is suggested to introduce Azolla as bio-fertilizer for acid water system, such as peat land water.

Determination of silicon and aluminum in silicon carbide nanocrystals by high-resolution continuum source graphite furnace atomic absorption spectrometry.

Science.gov (United States)

Dravecz, Gabriella; Bencs, László; Beke, Dávid; Gali, Adam

2016-01-15

The determination of Al contaminant and the main component Si in silicon carbide (SiC) nanocrystals with the size-distribution of 1-8nm dispersed in an aqueous solution was developed using high-resolution continuum source graphite furnace atomic absorption spectrometry (HR-CS-GFAAS). The vaporization/atomization processes were investigated in a transversally heated graphite atomizer by evaporating solution samples of Al and Si preserved in various media (HCl, HNO3). For Si, the best results were obtained by applying a mixture of 5µg Pd plus 5µg Mg, whereas for Al, 10µg Mg (each as nitrate solution) was dispensed with the samples, but the results obtained without modifier were found to be better. This way a maximum pyrolysis temperature of 1200°C for Si and 1300°C for Al could be used, and the optimum (compromise) atomization temperature was 2400°C for both analytes. The Si and Al contents of different sized SiC nanocrystals, dispersed in aqueous solutions, were determined against aqueous (external) calibration standards. The correlation coefficients (R values) of the calibrations were found to be 0.9963 for Si and 0.9991 for Al. The upper limit of the linear calibration range was 2mg/l Si and 0.25mg/l Al. The limit of detection was 3µg/l for Si and 0.5µg/l for Al. The characteristic mass (m0) was calculated to be 389pg Si and 6.4pg Al. The Si and Al content in the solution samples were found to be in the range of 1.0-1.7mg/l and 0.1-0.25mg/l, respectively. Copyright © 2015 Elsevier B.V. All rights reserved.

Gettering improvements of minority-carrier lifetimesin solar grade silicon

DEFF Research Database (Denmark)

Osinniy, Viktor; Nylandsted Larsen, Arne; Dahl, Espen

2012-01-01

The minority-carrier lifetime in p-type solar-grade silicon (SoG-Si) produced by Elkem Solar was investigated after different types of heat treatment. Two groups of samples differing by the as-grown lifetimes were exposed to internal and phosphorus gettering using constant and variable temperature...... processes. Optimal heat-treatment parameters for each group of samples were then identified which improved the minority-carrier lifetimes to values higher than the minimum value needed for solar cells. Phosphorus gettering using a variable temperature process enhanced in particular the lifetime within each...

A new model of tail diffusion of phosphorus and boron in silicon

International Nuclear Information System (INIS)

Morehead, F.F.; Lever, R.F.

1986-01-01

It is well known that high surface concentration phosphorus diffusion leads to deeply penetrating tails in its concentration profile. At 700 0 C the tail diffusivity exceeds that of low concentration phosphorus by a factor of a thousand. Less spectacular, but very significant tailing also affects boron, making the conventional models contained in commonly available process simulation programs quite inaccurate for boron diffusions with high surface concentrations. The authors show that the observed tailing can be accounted for by a model whose central assumption is the local equality of dopant and oppositely directed defect fluxes. As predicted by the model, the effect is greatest for normal processing at low temperatures for high surface concentrations. It is minimal for the high temperatures of rapid thermal annealing and unrelated to transient effects

A surface code quantum computer in silicon

Science.gov (United States)

Hill, Charles D.; Peretz, Eldad; Hile, Samuel J.; House, Matthew G.; Fuechsle, Martin; Rogge, Sven; Simmons, Michelle Y.; Hollenberg, Lloyd C. L.

2015-01-01

The exceptionally long quantum coherence times of phosphorus donor nuclear spin qubits in silicon, coupled with the proven scalability of silicon-based nano-electronics, make them attractive candidates for large-scale quantum computing. However, the high threshold of topological quantum error correction can only be captured in a two-dimensional array of qubits operating synchronously and in parallel—posing formidable fabrication and control challenges. We present an architecture that addresses these problems through a novel shared-control paradigm that is particularly suited to the natural uniformity of the phosphorus donor nuclear spin qubit states and electronic confinement. The architecture comprises a two-dimensional lattice of donor qubits sandwiched between two vertically separated control layers forming a mutually perpendicular crisscross gate array. Shared-control lines facilitate loading/unloading of single electrons to specific donors, thereby activating multiple qubits in parallel across the array on which the required operations for surface code quantum error correction are carried out by global spin control. The complexities of independent qubit control, wave function engineering, and ad hoc quantum interconnects are explicitly avoided. With many of the basic elements of fabrication and control based on demonstrated techniques and with simulated quantum operation below the surface code error threshold, the architecture represents a new pathway for large-scale quantum information processing in silicon and potentially in other qubit systems where uniformity can be exploited. PMID:26601310

A surface code quantum computer in silicon.

Science.gov (United States)

Hill, Charles D; Peretz, Eldad; Hile, Samuel J; House, Matthew G; Fuechsle, Martin; Rogge, Sven; Simmons, Michelle Y; Hollenberg, Lloyd C L

2015-10-01

The exceptionally long quantum coherence times of phosphorus donor nuclear spin qubits in silicon, coupled with the proven scalability of silicon-based nano-electronics, make them attractive candidates for large-scale quantum computing. However, the high threshold of topological quantum error correction can only be captured in a two-dimensional array of qubits operating synchronously and in parallel-posing formidable fabrication and control challenges. We present an architecture that addresses these problems through a novel shared-control paradigm that is particularly suited to the natural uniformity of the phosphorus donor nuclear spin qubit states and electronic confinement. The architecture comprises a two-dimensional lattice of donor qubits sandwiched between two vertically separated control layers forming a mutually perpendicular crisscross gate array. Shared-control lines facilitate loading/unloading of single electrons to specific donors, thereby activating multiple qubits in parallel across the array on which the required operations for surface code quantum error correction are carried out by global spin control. The complexities of independent qubit control, wave function engineering, and ad hoc quantum interconnects are explicitly avoided. With many of the basic elements of fabrication and control based on demonstrated techniques and with simulated quantum operation below the surface code error threshold, the architecture represents a new pathway for large-scale quantum information processing in silicon and potentially in other qubit systems where uniformity can be exploited.

Disentangling neighbors and extended range density oscillations in monatomic amorphous semiconductors.

Science.gov (United States)

Roorda, S; Martin, C; Droui, M; Chicoine, M; Kazimirov, A; Kycia, S

2012-06-22

High energy x-ray diffraction measurements of pure amorphous Ge were made and its radial distribution function (RDF) was determined at high resolution, revealing new information on the atomic structure of amorphous semiconductors. Fine structure in the second peak in the RDF provides evidence that a fraction of third neighbors are closer than some second neighbors; taking this into account leads to a narrow distribution of tetrahedral bond angles, (8.5 ± 0.1)°. A small peak which appears near 5 Å upon thermal annealing shows that some ordering in the dihedral bond-angle distribution takes place during structural relaxation. Extended range order is detected (in both a-Ge and a-Si) which persists to beyond 20 Å, and both the periodicity and its decay length increase upon thermal annealing. Previously, the effect of structural relaxation was only detected at intermediate range, involving reduced tetrahedral bond-angle distortions. These results enhance our understanding of the atomic order in continuous random networks and place significantly more stringent requirements on computer models intending to describe these networks, or their alternatives which attempt to describe the structure in terms of an arrangement of paracrystals.

Validation of methods of atomic absorption with flame for the analysis of potasium, zinc and manganese, and a spectrophotometer for the analysis of phosphorus in samples of fertilizers

International Nuclear Information System (INIS)

Pineda Castro, L. E.

1998-01-01

This study validated the spectrophotometric method by atomic absorption for the analysis of potassium, manganese and zinc in samples of fertilizers. Likewise, it validated the spectrophotometric method for the analysis of phosphorus by generation of the fosfomolibdovanadate. species The limits of detection and quantification obtained to a level of confidence of the 95% were: 0,6 ppm and 1,1 ppm for the potassium, 1,1 ppm, and 2,2 ppm for the phosphorus, 0,3 ppm and 0,5 ppm for the zinc and 0,6 ppm and 1,1 ppm for the manganese respectively. It established the repetibility and reproducible of the method to a level of the 95% of confidence and it determined that the fertilizers tolerance norm is complied with adequately for the potassium and the manganese. On the other hand, for the concentrations of phosphorus higher than 20%, it presented smaller reproducibility. For the zinc, it presented problems of precision of the method, in the two samples analyzed. The accuracy of the methodologies were the adequate. In the case of the phosphorus, it recommended the employment of a composed digestive mixture of nitric and perchloric acid when be a matter of materials that possess organic matter. (S. Grainger) [es

SVX/silicon detector studies

International Nuclear Information System (INIS)

Bagby, L.; Johnson, M.; Lipton, R.; Gu, W.

1995-11-01

AC coupled silicon detectors, being used for the DO upgrade, may have substantial voltage across the coupling capacitor. Failed capacitors can present ∼50 V to the input of the SVX, Silicon Vertex, device. We measured the effects that failed detector coupling capacitors have on the SVXD (rad soft 3μm), SVXH (rad hard 1.2μm), and SVXIIb (rad soft 1.2μm) amplifier / readout devices. The test results show that neighboring channels saturate when an excessive voltage is applied directly to a SVX channel. We believe that the effects are due to current diffusion within the SVX substrate rather than surface currents on the detectors. This paper discusses the magnitude of the saturation and a possible solution to the problem

Inter-atomic interaction between electrons, 2

International Nuclear Information System (INIS)

Haga, Eijiro; Kato, Tomohiko; Aisaka, Tsuyoshi.

1978-01-01

Intra- and inter-atomic interactions in the exchange process are defined with respect to the Wannier function rather than the atomic function. In relation to the neutron scattering data for nickel, the behavior for the effective exchange parameter I(q) in the q-dependent susceptibility is, in RPA, investigated by taking into account the main types of the nearest neighbor interactions and by extending our previous treatment. The different types of interactions lead to different behavior for the q-dependence of I(q). The contribution to I(q) from inter-atomic interactions other than the exchange type decreases as the surface area of the Fermi surface becomes large. For the exchange type, the l-th neighbor interaction with l<=4 is taken into account, and, from the comparison with the empirical result for I(q), it is found that the inter-atomic contribution to I(0) is about thirty percent with a reasonable decrease against l. (author)

The effect of phosphorus on the microstructure and mechanical properties of ATI 718Plus alloy

International Nuclear Information System (INIS)

Wang, Minqing; Du, Jinhui; Deng, Qun; Tian, Zhiling; Zhu, Jing

2015-01-01

Since the discovery in the 1990s of the abnormal improvement produced by phosphorus in the stress rupture and creep life of Inconel 718 (hereafter referred to as 718), a great deal of additional research followed. However, the mechanism of the action of phosphorous in 718 is still in question. This paper details an experimental study that was intended to determine how phosphorus acts upon the microstructure and mechanical properties of Ni–Fe based alloy 718Plus. The results show that phosphorus has little effect on the strength and ductility of alloy 718Plus, but can significantly improve the stress rupture life. Phase constituents such as the δ and γ′ phases were quantitatively analyzed using electrolytic phase isolation and micro-chemical and XRD analysis as the phosphorous content of the alloy was increased. A full atom mapping of the distribution of phosphorus in the 718Plus alloy was quantitatively determined using APT (Atom Probe Tomography) technique. The results showed that there is no significant segregation of phosphorus at the γ′/γ and γ′/γ′ interface, but it significantly segregates at the grain boundaries and δ/γ interface. It was found that phosphorus is extremely depleted in the δ phase, which is believed to inhibit δ-phase precipitation by preventing δ phase nucleation and growth in the 718Plus alloy. Finally, the influence of phosphorus on the microstructure and mechanical properties of the 718Plus alloy was discussed

The effect of phosphorus on the microstructure and mechanical properties of ATI 718Plus alloy

Energy Technology Data Exchange (ETDEWEB)

Wang, Minqing, E-mail: minqingw@yahoo.com [Central Iron and Steel Research Institute, Beijing 100081 (China); School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Beijing Key Laboratory of Advanced High Temperature Materials, Beijing 100081 (China); Du, Jinhui; Deng, Qun [Central Iron and Steel Research Institute, Beijing 100081 (China); Beijing Key Laboratory of Advanced High Temperature Materials, Beijing 100081 (China); Tian, Zhiling [Central Iron and Steel Research Institute, Beijing 100081 (China); Zhu, Jing, E-mail: jzhu@mail.tsinghua.edu.cn [School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)

2015-02-25

Since the discovery in the 1990s of the abnormal improvement produced by phosphorus in the stress rupture and creep life of Inconel 718 (hereafter referred to as 718), a great deal of additional research followed. However, the mechanism of the action of phosphorous in 718 is still in question. This paper details an experimental study that was intended to determine how phosphorus acts upon the microstructure and mechanical properties of Ni–Fe based alloy 718Plus. The results show that phosphorus has little effect on the strength and ductility of alloy 718Plus, but can significantly improve the stress rupture life. Phase constituents such as the δ and γ′ phases were quantitatively analyzed using electrolytic phase isolation and micro-chemical and XRD analysis as the phosphorous content of the alloy was increased. A full atom mapping of the distribution of phosphorus in the 718Plus alloy was quantitatively determined using APT (Atom Probe Tomography) technique. The results showed that there is no significant segregation of phosphorus at the γ′/γ and γ′/γ′ interface, but it significantly segregates at the grain boundaries and δ/γ interface. It was found that phosphorus is extremely depleted in the δ phase, which is believed to inhibit δ-phase precipitation by preventing δ phase nucleation and growth in the 718Plus alloy. Finally, the influence of phosphorus on the microstructure and mechanical properties of the 718Plus alloy was discussed.

Impurities of oxygen in silicon

International Nuclear Information System (INIS)

Gomes, V.M.S.

1985-01-01

The electronic structure of oxygen complex defects in silicon, using molecular cluster model with saturation by watson sphere into the formalism of Xα multiple scattering method is studied. A systematic study of the simulation of perfect silicon crystal and an analysis of the increasing of atom number in the clusters are done to choose the suitable cluster for the calculations. The divacancy in three charge states (Si:V 2 + , Si:V 2 0 , Si:V 2 - ), of the oxygen pair (Si:O 2 ) and the oxygen-vacancy pair (Si:O.V) neighbours in the silicon lattice, is studied. Distortions for the symmetry were included in the Si:V 2 + and Si:O 2 systems. The behavior of defect levels related to the cluster size of Si:V 2 0 and Si:O 2 systems, the insulated oxygen impurity of silicon in interstitial position (Si:O i ), and the complexes involving four oxygen atoms are analysed. (M.C.K.) [pt

Atomic oxygen effects on boron nitride and silicon nitride: A comparison of ground based and space flight data

Science.gov (United States)

Cross, J. B.; Lan, E. H.; Smith, C. A.; Whatley, W. J.

1990-01-01

The effects of atomic oxygen on boron nitride (BN) and silicon nitride (Si3N4) were evaluated in a low Earth orbit (LEO) flight experiment and in a ground based simulation facility. In both the inflight and ground based experiments, these materials were coated on thin (approx. 250A) silver films, and the electrical resistance of the silver was measured in situ to detect any penetration of atomic oxygen through the BN and Si3N4 materials. In the presence of atomic oxygen, silver oxidizes to form silver oxide, which has a much higher electrical resistance than pure silver. Permeation of atomic oxygen through BN, as indicated by an increase in the electrical resistance of the silver underneath, was observed in both the inflight and ground based experiments. In contrast, no permeation of atomic oxygen through Si3N4 was observed in either the inflight or ground based experiments. The ground based results show good qualitative correlation with the LEO flight results, indicating that ground based facilities such as the one at Los Alamos National Lab can reproduce space flight data from LEO.

Origins of visible-light emissions in hydrogen-coated silicon nanocrystals: Role of passivating coating

International Nuclear Information System (INIS)

Tit, Nacir; Yamani, Z.H.; Graham, J.; Ayesh, A.

2010-01-01

We present a theoretical investigation of the electronic and optical properties of hydrogen-coated silicon nanocrystals (Si:H NCs). On one hand, the density-functional theory (DFT) is used to both calculate the total energy and relax the NCs. On a second hand, the tight-binding method, which includes the minimal sp 3 -basis set within the second-nearest-neighbor interaction scheme, is applied to calculate the electronic structures, oscillator strength (OS) and recombination rate (RR) versus the NC size, coating and atomic relaxation. Three main findings are reported: (i) The quantum confinement in these NCs do follow similar rule to the case of a single-particle in a box, where the confinement energy decays in power-law with the increasing NC's size. (ii) The coating is shown to play the essential role in creation of large band-gap energy lying within the visible-light energy spectrum. (iii) The surface atomic relaxation is found to reduce the band-gap energy by about 150 meV and enhance both OS and RR. Our claims are corroborated by the available experimental data.

Investigation of the feasibility to use Zeeman-effect background correction for the graphite furnace determination of phosphorus using high-resolution continuum source atomic absorption spectrometry as a diagnostic tool

Energy Technology Data Exchange (ETDEWEB)

Lepri, Fabio G. [Departamento de Quimica, Universidade Federal de Santa Catarina, 88040-900 Florianopolis, SC (Brazil); Welz, Bernhard, E-mail: w.bernardo@terra.com.b [Departamento de Quimica, Universidade Federal de Santa Catarina, 88040-900 Florianopolis, SC (Brazil); Dessuy, Morgana B.; Vale, Maria Goreti R. [Instituto de Quimica, Universidade Federal do Rio Grande do Sul, Av. Bento Goncalves, 9500, 91501-970 Porto Alegre-RS (Brazil); Bohrer, Denise [Departamento de Quimica, Universidade Federal de Santa Maria, 97110-905 Santa Maria, RS (Brazil); Loos-Vollebregt, Margaretha T.C. de [Delft University of Technology, Faculty of Applied Sciences, Analytical Biotechnology, Julianalaan 137, 2628 BL Delft (Netherlands); Department of Analytical Chemistry, Ghent University, Krijgslaan 281 - S12, B-9000 Ghent (Belgium); Mao Donghuang; Becker-Ross, Helmut [ISAS, Institute for Analytical Sciences, Department of Interface Spectroscopy, Albert-Einstein Str. 9, 12489 Berlin (Germany)

2010-01-15

The determination of phosphorus by graphite furnace atomic absorption spectrometry at the non-resonance line at 213.6 nm, and the capability of Zeeman-effect background correction (Z-BC) to deal with the fine-structured background absorption due to the PO molecule have been investigated in the presence of selected chemical modifiers. Two line source atomic absorption spectrometers, one with a longitudinally heated and the other with a transversely heated graphite tube atomizer have been used in this study, as well as two prototype high-resolution continuum source atomic absorption spectrometers, one of which had a longitudinally arranged magnet at the furnace. It has been found that Z-BC is capable correcting very well the background caused by the PO molecule, and also that of the NO molecule, which has been encountered when the Pd + Ca mixed modifier was used. Both spectra exhibited some Zeeman splitting, which, however, did not cause any artifacts or correction errors. The practical significance of this study is to confirm that accurate results can be obtained for the determination of phosphorus using Z-BC. The best sensitivity with a characteristic mass of m{sub 0} = 11 ng P has been obtained with the pure Pd modifier, which also caused the lowest background level. The characteristic mass obtained with the mixed Pd+Ca modifier depended on the equipment used and was between m{sub 0} = 9 ng P and m{sub 0} = 15 ng P, and the background signal was higher. The major problem of Z-BC remains the relatively restricted linear working range.

Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

International Nuclear Information System (INIS)

Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang; Yang, Deren; Lu, Yunhao

2014-01-01

The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B 2 I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition

Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

Energy Technology Data Exchange (ETDEWEB)

Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn; Yang, Deren [State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Lu, Yunhao, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn [International Center for New-Structured Materials and Laboratory of New-Structured Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

2014-01-20

The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B{sub 2}I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition.

An improved method of preparing silicon carbide

International Nuclear Information System (INIS)

Baney, R.H.

1979-01-01

A method of preparing silicon carbide is described which comprises forming a desired shape from a polysilane of the average formula:[(CH 3 ) 2 Si][CH 3 Si]. The polysilane contains from 0 to 60 mole percent (CH 3 ) 2 Si units and from 40 to 100 mole percent CH 3 Si units. The remaining bonds on the silicon are attached to another silicon atom or to a halogen atom in such manner that the average ratio of halogen to silicon in the polysilane is from 0.3:1 to 1:1. The polysilane has a melt viscosity at 150 0 C of from 0.005 to 500 Pa.s and an intrinsic viscosity in toluene of from 0.0001 to 0.1. The shaped polysilane is heated in an inert atmosphere or in a vacuum to an elevated temperature until the polysilane is converted to silicon carbide. (author)

Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

International Nuclear Information System (INIS)

Wang, Xiaojuan; Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli; Zhou, Jun; Zhang, Zengxing

2015-01-01

Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

Energy Technology Data Exchange (ETDEWEB)

Wang, Xiaojuan [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhou, Jun, E-mail: zhoujunzhou@tongji.edu.cn [Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhang, Zengxing, E-mail: zhangzx@tongji.edu.cn [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)

2015-10-01

Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

Effects of phosphorus on the δ-Ni3Nb phase precipitation and the stress rupture properties in alloy 718

International Nuclear Information System (INIS)

Sun, W.R.; Guo, S.R.; Hu, Z.Q.; Park, N.K.; Yoo, Y.S.; Choe, S.J.

1998-01-01

The effects of phosphorus on the phase transformation and stress rupture properties of alloy 718 were investigated. The nucleation of δ-phase, which does not contain phosphorus, was suppressed by the enrichment of phosphorus at grain boundaries. A low level of phosphorus resulted in the formation of faults-containing film-like δ-phase along the grain boundaries, while a higher level of phosphorus favored the long lath-like δ-phase precipitation. Phosphorus greatly prolonged the stress rupture life of the alloy in the range of 0.0008-0.013 wt.%, while it reduced the stress rupture life in the range of 0.013-0.049 wt.%. The effect of phosphorus on the stress rupture properties was closely related to its interaction with oxygen. Phosphorus atoms, in the range of 0.0008-0.013 wt.%, enhanced the resistance to oxygen intrusion along the grain boundaries, protected the grain boundaries from decohesion by oxygen atoms and oxidation, and subsequently prolonged the rupture life of the alloy. The protection effect of P is clearly demonstrated by the phenomenon that the crack initiation site was shifted from the surface to the center in the stress-ruptured samples with increasing addition of P. Over 0.013 wt.%, the protection effect of phosphorus is excessive and phosphorus began to display its inherent effect of damaging the grain boundary strength: the stress rupture life of the alloy was reduced accordingly. Maximum stress rupture life was thus obtained at ∼0.013 wt.% P. (orig.)

Determinação de fósforo em aços por espectrometria de absorção atômica no forno de grafite Determination of phosphorus in steel samples by graphite furnace atomic absorption spectrometry

Directory of Open Access Journals (Sweden)

Adilson José Curtius

1998-06-01

Full Text Available A method for the determination of phosphorus in steel samples by graphite furnace atomic absorption spectrometry, using the Zeeman effect background correction and the STPF conditions is proposed. The effect of iron (III on the phosphorus signal was studied. It was verified, through the pyrolysis temperature curves, that iron (III is an efficient chemical modifier, thermically stabilizing phosphorus up to 1400ºC. The phosphorus signal increases with the iron (III concentration, but in the range, which corresponds to the usual concentrations of iron in the sample solutions, the increase is small. Phosphorus was determined in three standard reference materials, after its dissolution in a mixture of hydrochloric and perchloric acids in a PTFE bomb. The agreement with the certified concentration values was excellent. Iron (III was added to the reference analytical solutions prepared in the blank of the dissolution, while the sample solutions were measured directly, since they already contained the modifier. The detection limit (k = 2 was 0.0042% of phosphorus in the steel sample.

Electrical studies of Fe-related defect complexes in silicon

Energy Technology Data Exchange (ETDEWEB)

Tang, Chi Kwong

2012-09-15

Iron (Fe) is an important impurity in solar-grade silicon which contributes substantially in degrading the efficiency of solar cells. The degradation is mainly caused by the Fe atoms situating at an unperturbed tetrahedral interstitial sites (Fei) in the silicon crystal, consequently acting as a recombination center. By altering the position and the neighbouring environment at which the Fe atoms reside, there are opportunities in minimizing or neutralizing the electrical activity of Fe. Furthermore, utilizing the high mobility of Fe, one can increase the performance of a device by accumulating the Fe atoms from critical regions into regions where Fe can be tolerated. These approaches can help in realizing high efficient solar cells based on cheap and highly Fe-contaminated silicon. In this work, we have investigated the interaction between Fe and defects relevant to solar cells, using mainly electrical characterization methods such as capacitance-voltage measurement, deep level transient spectroscopy and admittance spectroscopy. From the study of potential hydrogen passivation of Fe, hydrogen was introduced through wet chemical etching and further driven to a defined region. Using depth profiles, it is found that incorporation of hydrogen stimulates the dissociation of the iron-boron (Fe-B) pair, releasing and resulting in the unwanted Fei. At the same time, no passivation of Fe by hydrogen has been observed. On the investigation of the mechanism of phosphorus gettering of metal impurities, vacancies have been generated through proton-irradiation. The resulting irradiation-induced defects were examined for reactions with Fe after heat treatments. Based on the evolution of defect concentrations by isochronal annealings, it is found that Fe interacts with the divacancy and the vacancy-oxygen complexes, forming deep levels of 0.28 eV and 0.34 eV above the valence band edge (EV), respectively. In the search for substitutional Fe to investigate its electrical activity

Atomic insight into tribochemical wear mechanism of silicon at the Si/SiO{sub 2} interface in aqueous environment: Molecular dynamics simulations using ReaxFF reactive force field

Energy Technology Data Exchange (ETDEWEB)

Wen, Jialin; Ma, Tianbao [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Zhang, Weiwei; Psofogiannakis, George; Duin, Adri C.T. van [Department of Mechanical and Nuclear Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Chen, Lei; Qian, Linmao [Tribology Research Institute, Key Laboratory of Advanced Technologies of Materials (Ministry of Education), Southwest Jiaotong University, Chengdu 610031 (China); Hu, Yuanzhong [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Lu, Xinchun, E-mail: xclu@tsinghua.edu.cn [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China)

2016-12-30

Highlights: • New ReaxFF reactive force field was applied to simulate the tribochemical wear process at Si/SiO{sub 2} interface. • Wear of silicon atoms is due to the breaking of Si–O–Si bonds and Si–Si–O–Si bond chains on the Si substrate. • Interfacial bridge bonds play an important role during the tribochemical wear process. • Higher pressures applied to the silica phase can cause more Si atoms to be removed by forming more interfacial bridge bonds. • Water plays an opposing role in the wear process because of its both chemical and mechanical effects. - Abstract: In this work, the atomic mechanism of tribochemical wear of silicon at the Si/SiO{sub 2} interface in aqueous environment was investigated using ReaxFF molecular dynamics (MD) simulations. Two types of Si atom removal pathways were detected in the wear process. The first is caused by the destruction of stretched Si–O–Si bonds on the Si substrate surface and is assisted by the attachment of H atoms on the bridging oxygen atoms of the bonds. The other is caused by the rupture of Si–Si bonds in the stretched Si–Si–O–Si bond chains at the interface. Both pathways effectively remove Si atoms from the silicon surface via interfacial Si–O–Si bridge bonds. Our simulations also demonstrate that higher pressures applied to the silica phase can cause more Si atoms to be removed due to the formation of increased numbers of interfacial Si–O–Si bridge bonds. Besides, water plays a dual role in the wear mechanism, by oxidizing the Si substrate surface as well as by preventing the close contact of the surfaces. This work shows that the removal of Si atoms from the substrate is a result of both chemical reaction and mechanical effects and contributes to the understanding of tribochemical wear behavior in the microelectromechanical systems (MEMS) and Si chemical mechanical polishing (CMP) process.

Recent Progress in the Development of Supercritical Carbon Dioxide-Soluble Metal Ion Extractants: Aggregation, Extraction, and Solubility Properties of Silicon-Substituted Alkylenediphosphonic Acids

Energy Technology Data Exchange (ETDEWEB)

Dietz, Mark L.; McAlister, Daniel R.; Stepinski, Dominique C.; Zalupski, Peter R.; Dzilawa, Julie A.; Barrans, Richard E.; Hess, J.N.; Rubas, Audris V.; Chiarizia, Renato; Lubbers, Christopher M.; Scurto, Aaron M.; Brennecke, Joan F.; Herlinger, Albert W.

2003-09-11

Partially esterified alkylenediphosphonic acids (DPAs) have been shown to be effective reagents for the extraction of actinide ions from acidic aqueous solution into conventional organic solvents. Efforts to employ these compounds in supercritical fluid extraction have been hampered by their modest solubility in unmodified supercritical carbon dioxide (SC-CO2). In an effort to design DPAs that are soluble in SC-CO2, a variety of silicon-substituted alkylenediphosphonic acids have been prepared and characterized, and their behavior compared with that of conventional alkyl-substituted reagents. Silicon substitution is shown to enhance the CO2-philicity of the reagents, while other structural features, in particular, the number of methylene groups bridging the phosphorus atoms of the extractant, are shown to exert a significant influence on their aggregation and extraction properties. The identification of DPAs combining desirable extraction properties with adequate solubility in SC-CO2 is shown to be facilitated by the application of molecular connectivity indices.

An improved method for preparing silicon carbide

International Nuclear Information System (INIS)

Baney, R.H.

1980-01-01

A desired shape is formed from a polysilane and the shape is heated in an inert atmosphere or under vacuum to 1150 to 1600 0 C until the polysilane is converted to silicon carbide. The polysilane contains from 0 to 60 mole percent of (CH 3 ) 2 Si units and from 40 to 100 mole percent of CH 3 Si units. The remaining bonds on silicon are attached to another silicon atom or to a chlorine or bromine atom, such that the polysilane contains from 10 to 43 weight percent of hydrolyzable chlorine or from 21 to 63 weight percent of hydrolyzable bromine. (author)

The effect of carbon and boron on the accumulation of vacancy-oxygen complexes in silicon

International Nuclear Information System (INIS)

Akhmetov, V.D.; Bolotov, V.V.

1980-01-01

By means of IR-absorption measurements the dose dependencies of the concentrations of vacancy-oxygen complexes (VO), interstitial oxygen atoms (Osub(I)), substitutional carbon atoms (Csub(S)) and interstitial carbon-oxygen complexes (Csub(I)Osub(I)) in n- and p-type silicon irradiated with 1.1 MeV electrons have been investigated. The observed increase of the production rate of VO-complexes with the rise of carbon and boron atoms concentrations (these impurities act as sinks for silicon interstitial atoms) has been explained in terms of annihilation of the vacancies and interstitials on the oxygen atoms. The results obtained show that boron atoms are more effective sinks than carbon atoms for the interstitial silicon atoms. That seems to be connected not only with the higher probability of boron injection into interstitial position but also with the further capture of interstitial silicon atoms on the interstitial boron, i.e. with the interstitial cluster formation. (author)

Hydrogen molecules and hydrogen-related defects in crystalline silicon

OpenAIRE

Fukata, N.; Sasak, S.; Murakami, K.; Ishioka, K.; Nakamura, K. G.; Kitajima, M.; Fujimura, S.; Kikuchi, J.; Haneda, H.

1997-01-01

We have found that hydrogen exists in molecular form in crystalline silicon treated with hydrogen atoms in the downstream of a hydrogen plasma. The vibrational Raman line of hydrogen molecules is observed at 4158cm-1 for silicon samples hydrogenated between 180 and 500 °C. The assignment of the Raman line is confirmed by its isotope shift to 2990cm-1 for silicon treated with deuterium atoms. The Raman intensity has a maximum for hydrogenation at 400 °C. The vibrational Raman line of the hydro...

High yield silicon carbide prepolymers

International Nuclear Information System (INIS)

Baney, R.H.

1982-01-01

Prepolymers which exhibit good handling properties, and are useful for preparing ceramics, silicon carbide ceramic materials and articles containing silicon carbide, are polysilanes consisting of 0 to 60 mole% (CH 3 ) 2 Si units and 40 to 100 mole% CH 3 Si units, all Si valences being satisfied by CH 3 groups, other Si atoms, or by H atoms, the latter amounting to 0.3 to 2.1 weight% of the polysilane. They are prepared by reducing the corresponding chloro- or bromo-polysilanes with at least the stoichiometric amount of a reducing agent, e.g. LiAlH 4 . (author)

Investigation of the interface region between a porous silicon layer and a silicon substrate

International Nuclear Information System (INIS)

Lee, Ki-Won; Park, Dae-Kyu; Kim, Young-You; Shin, Hyun-Joon

2005-01-01

Atomic force microscopy (AFM) measurement and X-ray diffraction (XRD) analysis were performed to investigate the physical and structural characteristics of the interface region between a porous silicon layer and a silicon substrate. We discovered that, when anodization time was increased under a constant current density, the Si crystallites in the interface region became larger and formed different lattice parameters than observed in the porous silicon layer. Secondary ion mass spectrometry (SIMS) analysis also revealed that the Si was more concentrated in the interface region than in the porous silicon layer. These results were interpreted by the deficiency of the HF solution in reaching to the interface through the pores during the porous silicon formation

Fabrication of silicon solar cell with >18% efficiency using spin-on-film processing for phosphorus diffusion and SiO{sub 2}/graded index TiO{sub 2} anti-reflective coating

Energy Technology Data Exchange (ETDEWEB)

Lee, Yi-Yu; Ho, Wen-Jeng, E-mail: wjho@ntut.edu.tw; Yeh, Chien-Wu

2015-11-01

Highlights: • Employed SOF technology for both phosphorus diffusion and multi-layer ARCs. • Optical properties of TiO{sub 2}, SiO{sub 2}, and SiO{sub 2}/TiO{sub 2}/TiO{sub 2} films are characterized. • Photovoltaic performances of the fabricated solar cells are measured and compared. • An impressive efficiency of 18.25% was obtained by using the SOF processes. - Abstract: This study employed spin-on film (SOF) technology for the fabrication of phosphorus diffusion and multi-layer anti-reflective coatings (ARCs) with a graded index on silicon (Si) wafers. Low cost and high efficiency solar cells are important issues for the operating cost of a photovoltaic system. SOF technology for the fabrication of solar cells can be for the achievement of this goal. This study succeeded in the application of SOF technology in the preparation of both phosphorus diffusion and SiO{sub 2}/graded index TiO{sub 2} ARCs for Si solar cells. Optical properties of TiO{sub 2}, SiO{sub 2}, and multi-layer SiO{sub 2}/TiO{sub 2} deposition by SOF are characterized. Electrical and optical characteristics of the fabricated solar cells are measured and compared. An impressive efficiency of 18.25% was obtained by using the SOF processes.

Atomic Layer Deposition Alumina-Passivated Silicon Nanowires: Probing the Transition from Electrochemical Double-Layer Capacitor to Electrolytic Capacitor.

Science.gov (United States)

Gaboriau, Dorian; Boniface, Maxime; Valero, Anthony; Aldakov, Dmitry; Brousse, Thierry; Gentile, Pascal; Sadki, Said

2017-04-19

Silicon nanowires were coated by a 1-5 nm thin alumina layer by atomic layer deposition (ALD) in order to replace poorly reproducible and unstable native silicon oxide by a highly conformal passivating alumina layer. The surface coating enabled probing the behavior of symmetric devices using such electrodes in the EMI-TFSI electrolyte, allowing us to attain a large cell voltage up to 6 V in ionic liquid, together with very high cyclability with less than 4% capacitance fade after 10 6 charge/discharge cycles. These results yielded fruitful insights into the transition between an electrochemical double-layer capacitor behavior and an electrolytic capacitor behavior. Ultimately, thin ALD dielectric coatings can be used to obtain hybrid devices exhibiting large cell voltage and excellent cycle life of dielectric capacitors, while retaining energy and power densities close to the ones displayed by supercapacitors.

NeighborHood

OpenAIRE

Corominola Ocaña, Víctor

2015-01-01

NeighborHood és una aplicació basada en el núvol, adaptable a qualsevol dispositiu (mòbil, tablet, desktop). L'objectiu d'aquesta aplicació és poder permetre als usuaris introduir a les persones del seu entorn més immediat i que aquestes persones siguin visibles per a la resta d'usuaris. NeighborHood es una aplicación basada en la nube, adaptable a cualquier dispositivo (móvil, tablet, desktop). El objetivo de esta aplicación es poder permitir a los usuarios introducir a las personas de su...

Microstructural effects of phosphorus on pressure die cast Al-12Si components

Directory of Open Access Journals (Sweden)

Suárez-Peña, B.

2007-10-01

Full Text Available The refinement of cuboidal silicon in eutectic Al-Si alloys by phosphorus additions used to manufacture pressure die cast components was studied. The results show that the addition of phosphorus in the form of AlFeP mother alloy before process degassing, leads to the best refinement of the size of the Si-cuboids phase, among several phosphorus additions analysed in the present research.

Se ha estudiado el afino del silicio cuboidal en aleaciones eutécticas Al-Si por acción del fósforo, en piezas obtenidas mediante la técnica de fundición a presión. Tras la adición de fósforo en pruebas industriales, en las que dicho elemento se incorpora al baño con diversas composiciones, los mejores resultados se obtienen con la adición de la aleación madre AlFeP, previa al desgasificado industrial.

Phosphorus organic extragents and sorbents of radioactive a heavy metals

International Nuclear Information System (INIS)

Trofimov, B.A.; Gusarova, N.K.; Malysheva, S.F.; Sukhov, B.G.

2002-01-01

A fundamentally new method for activation of phosphorus in heterogenous super-base media including the conditions of mechanical, ultrasonic and X-ray activation, opening up a new way to C-P bond formation is developed. The method is opens principally new possibilities for direct atom-economic synthesis of previously unknown or difficult to obtain organophosphorus compounds (primary, secondary, tertiary phosphines and phosphine oxides) from elemental phosphorus and orga-nyl halides, electrophilic alkenes, acetylenes and oxiranes. Thus, the phosphothion and phosphorylation of organic compounds with elemental phosphorus, phosphines and phosphine oxides opens the principal new approach to the synthesis of specific and selective extra-gents, sorbents and complex-forming agents which can be used in the processes of purification and disinfecting of soil and water from radioactive and heavy metals

Evidence of sub-10 nm aluminum-oxygen precipitates in silicon

International Nuclear Information System (INIS)

Moutanabbir, Oussama; Isheim, Dieter; Mao, Zugang; Seidman, David N

2016-01-01

In this research, ultraviolet laser-assisted atom-probe tomography (APT) was utilized to investigate precisely the behavior at the atomistic level of aluminum impurities in ultrathin epitaxial silicon layers. Aluminum atoms were incorporated in situ during the growth process. The measured average aluminum concentration in the grown layers exceeds by several orders of magnitude the equilibrium bulk solubility. Three-dimensional atom-by-atom mapping demonstrates that aluminum atoms precipitate in the silicon matrix and form nanoscopic precipitates with lateral dimensions in the 1.3 to 6.2 nm range. These precipitates were found to form only in the presence of oxygen impurity atoms, thus providing clear evidence of the long-hypothesized role of oxygen and aluminum-oxygen complexes in facilitating the precipitation of aluminum in a silicon lattice. The measured average aluminum and oxygen concentrations in the precipitates are ∼10 ± 0.5 at.% and ∼4.4 ± 0.5 at.%, respectively. This synergistic interaction is supported by first-principles calculations of the binding energies of aluminum-oxygen dimers in silicon. The calculations demonstrate that there is a strong binding between aluminum and oxygen atoms, with Al-O-Al and O-Al-Al as the energetically favorable sequences corresponding to precipitates in which the concentration of aluminum is twice as large as the oxygen concentration in agreement with APT data. (paper)

Recrystallization behaviour and electrical properties of germanium ion implanted polycrystalline silicon films

International Nuclear Information System (INIS)

Kang, Myeon-Koo; Matsui, Takayuki; Kuwano, Hiroshi

1996-01-01

The recrystallization behaviour of undoped and phosphorus-doped polycrystalline silicon films amorphized by germanium ion implantation at doses ranging from 1 x 10 15 to 1 x 10 16 cm -2 are investigated, and the electrical properties of phosphorus-doped films after recrystallization are studied. The phosphorus doping concentration ranges from 3 x 10 18 to 1 x 10 20 cm -3 . It is found that the nucleation rate decreases for undoped films and increases for phosphorus-doped films with increasing germanium dose; the growth rates decrease for both doped and undoped films. The decrease in nucleation rate is caused by the increase in implantation damage. The decrease in growth rate is considered to be due to the increase in lattice strain. The grain size increases with germanium dose for undoped films, but decreases for phosphorus-doped films. The dependence of the electrical properties of the recrystallized films as a function of phosphorus doping concentration with different germanium doses can be explained in terms of the grain size, crystallinity and grain boundary barrier height. (Author)

Note: A silicon-on-insulator microelectromechanical systems probe scanner for on-chip atomic force microscopy

Energy Technology Data Exchange (ETDEWEB)

Fowler, Anthony G.; Maroufi, Mohammad; Moheimani, S. O. Reza, E-mail: Reza.Moheimani@newcastle.edu.au [School of Electrical Engineering and Computer Science, University of Newcastle, Callaghan, NSW 2308 (Australia)

2015-04-15

A new microelectromechanical systems-based 2-degree-of-freedom (DoF) scanner with an integrated cantilever for on-chip atomic force microscopy (AFM) is presented. The silicon cantilever features a layer of piezoelectric material to facilitate its use for tapping mode AFM and enable simultaneous deflection sensing. Electrostatic actuators and electrothermal sensors are used to accurately position the cantilever within the x-y plane. Experimental testing shows that the cantilever is able to be scanned over a 10 μm × 10 μm window and that the cantilever achieves a peak-to-peak deflection greater than 400 nm when excited at its resonance frequency of approximately 62 kHz.

High-performance RF coil inductors on silicon

Energy Technology Data Exchange (ETDEWEB)

Malba, V.; Young, D.; Ou, J.J.; Bernhardt, A.F.; Boser, B.E.

1998-03-01

Strong demand for wireless communication devices has motivated research directed toward monolithic integration of transceivers. The fundamental electronic component least compatible with silicon integrated circuits is the inductor, although a number of inductors are required to implement oscillators, filters and matching networks in cellular devices. Spiral inductors have been integrated into the silicon IC metallization sequence but have not performed adequately due to coupling to the silicon which results in parasitic capacitance and loss. We have, for the first time, fabricated three dimensional coil inductors on silicon which have significantly lower capacitive coupling and loss and which now exceed the requirements of potential applications. Quality factors of 30 at 1 GHz have been measured in single turn devices and Q > 16 in 2 and 4 turn devices. The reduced Q for multiturn devices appears to be related to eddy currents in outer turns generated by magnetic fields from current in neighboring turns. Higher Q values significantly in excess of 30 are anticipated using modified coil designs.

Microscratch testing method for systematic evaluation of the adhesion of atomic layer deposited thin films on silicon

Energy Technology Data Exchange (ETDEWEB)

Kilpi, Lauri, E-mail: Lauri.Kilpi@vtt.fi; Ylivaara, Oili M. E.; Vaajoki, Antti; Puurunen, Riikka L.; Ronkainen, Helena [VTT Technical Research Centre of Finland Ltd., P.O. Box 1000, FI-02044 VTT (Finland); Malm, Jari [Department of Physics, University of Jyväskylä, P.O. Box 35, Jyväskylä 40014 (Finland); Sintonen, Sakari [Department of Micro- and Nanosciences, Aalto University School of Electrical Engineering, P.O. Box 13500, FI-00076 AALTO (Finland); Tuominen, Marko [ASM Microchemistry Oy, Pietari Kalmin katu 1 F 2, FIN-00560 Helsinki (Finland)

2016-01-15

The scratch test method is widely used for adhesion evaluation of thin films and coatings. Usual critical load criteria designed for scratch testing of coatings were not applicable to thin atomic layer deposition (ALD) films on silicon wafers. Thus, the bases for critical load evaluation were established and the critical loads suitable for ALD coating adhesion evaluation on silicon wafers were determined in this paper as L{sub CSi1}, L{sub CSi2}, L{sub CALD1}, and L{sub CALD2}, representing the failure points of the silicon substrate and the coating delamination points of the ALD coating. The adhesion performance of the ALD Al{sub 2}O{sub 3}, TiO{sub 2}, TiN, and TaCN+Ru coatings with a thickness range between 20 and 600 nm and deposition temperature between 30 and 410 °C on silicon wafers was investigated. In addition, the impact of the annealing process after deposition on adhesion was evaluated for selected cases. The tests carried out using scratch and Scotch tape test showed that the coating deposition and annealing temperature, thickness of the coating, and surface pretreatments of the Si wafer had an impact on the adhesion performance of the ALD coatings on the silicon wafer. There was also an improved load carrying capacity due to Al{sub 2}O{sub 3}, the magnitude of which depended on the coating thickness and the deposition temperature. The tape tests were carried out for selected coatings as a comparison. The results show that the scratch test is a useful and applicable tool for adhesion evaluation of ALD coatings, even when carried out for thin (20 nm thick) coatings.

Investigation of magnetism in aluminum-doped silicon carbide nanotubes

Science.gov (United States)

Behzad, Somayeh; Chegel, Raad

2013-11-01

The effect of aluminum doping on the structural, electronic and magnetic properties of (8,0) silicon carbide nanotube (SiCNT) is investigated using spin-polarized density functional theory. It is found from the calculation of the formation energies that aluminum substitution for silicon atom is preferred. Our results show that the magnetization depends on the substitutional site, aluminum substitution at silicon site does not introduce any spin-polarization, whereas the aluminum substitution for carbon atom yields a spin polarized, almost dispersionless π band within the original band gap.

Growth and characterization of heavily doped silicon crystals

Energy Technology Data Exchange (ETDEWEB)

Scala, R.; Porrini, M. [MEMC Electronic Materials SpA, via Nazionale 59, 39012 Merano (Italy); Borionetti, G. [MEMC Electronic Materials SpA, viale Gherzi 31, Novara (Italy)

2011-08-15

Silicon crystals grown with the Czochralski method are still the most common material used for the production of electronic devices. In recent years, a growing need of large diameter crystals with increasingly higher doping levels is observed, especially to support the expanding market of discrete devices and its trend towards lower and lower resistivity levels for the silicon substrate. The growth of such heavily doped, large-diameter crystals poses several new challenges to the crystal grower, and the presence of a high dopant concentration in the crystal affects significantly its main properties, requiring also the development of dedicated characterization techniques. This paper illustrates the recent advances in the growth and characterization of silicon crystals heavily doped with antimony, arsenic, phosphorus and boron. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Neighboring and Urbanism: Commonality versus Friendship.

Science.gov (United States)

Silverman, Carol J.

1986-01-01

Examines a dimension of neighboring that need not assume friendship as the role model. When the model assumes only a sense of connectedness as defining neighboring, then the residential correlation, shown in many studies between urbanism and neighboring, disappears. Theories of neighboring, study variables, methods, and analysis are discussed.…

Defects in heavily phosphorus-doped Si epitaxial films probed by monoenergetic positron beams

International Nuclear Information System (INIS)

Uedono, Akira; Tanigawa, Shoichiro; Suzuki, Ryoichi; Ohgaki, Hideaki; Mikado, Tomohisa.

1994-01-01

Vacancy-type defects in heavily phosphorus-doped Si epitaxial films were probed by monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured for the epitaxial films grown on the Si substrates by plasma chemical vapor deposition. For the as-deposited film, divacancy-phosphorus complexes were found with high concentration. After 600degC annealing, vacancy clusters were formed near the Si/Si interface, while no drastic change in the depth distribution of the divacancy-phosphorus complexes was observed. By 900degC annealing, the vacancy clusters were annealed out; however, the average number of phosphorus atoms coupled with divacancies increased. The relationship between the vacancy-type defects probed by the positron annihilation technique and the carrier concentration was confirmed. (author)

Defects in heavily phosphorus-doped Si epitaxial films probed by monoenergetic positron beams

Energy Technology Data Exchange (ETDEWEB)

Uedono, Akira; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Suzuki, Ryoichi; Ohgaki, Hideaki; Mikado, Tomohisa

1994-11-01

Vacancy-type defects in heavily phosphorus-doped Si epitaxial films were probed by monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured for the epitaxial films grown on the Si substrates by plasma chemical vapor deposition. For the as-deposited film, divacancy-phosphorus complexes were found with high concentration. After 600degC annealing, vacancy clusters were formed near the Si/Si interface, while no drastic change in the depth distribution of the divacancy-phosphorus complexes was observed. By 900degC annealing, the vacancy clusters were annealed out; however, the average number of phosphorus atoms coupled with divacancies increased. The relationship between the vacancy-type defects probed by the positron annihilation technique and the carrier concentration was confirmed. (author).

Coordinate determination of high energy charged particles by silicon strip detectors

International Nuclear Information System (INIS)

Anokhin, I.E.; Zinets, O.S.

2002-01-01

The coordinate determination accuracy of minimum ionizing and short-range particles by silicon strip detectors has been considered. The charge collection on neighboring strips of the detector is studied and the influence of diffusion and the electric field distribution on the accuracy of the coordinate determination is analyzed. It has been shown that coordinates of both minimum ionizing and short-range particles can be determined with accuracy to a few microns using silicon strip detectors. 11 refs.; 8 figs

N-type polycrystalline silicon films formed on alumina by aluminium induced crystallization and overdoping

Energy Technology Data Exchange (ETDEWEB)

Tuezuen, O. [InESS, UMR 7163 CNRS-ULP, 23 rue du Loess, F-67037 Strasbourg (France)], E-mail: Ozge.Tuzun@iness.c-strasbourg.fr; Slaoui, A. [InESS, UMR 7163 CNRS-ULP, 23 rue du Loess, F-67037 Strasbourg (France); Gordon, I. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Focsa, A. [InESS, UMR 7163 CNRS-ULP, 23 rue du Loess, F-67037 Strasbourg (France); Ballutaud, D. [GEMaC-UMR 8635 CNRS, 1 place Aristide Briand, F-92195 Meudon (France); Beaucarne, G.; Poortmans, J. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium)

2008-08-30

In this work, we investigated the formation of n-type polysilicon films on alumina substrates by overdoping a p-type silicon layer obtained by aluminium induced crystallization of amorphous silicon (AIC), and subsequent epitaxy. The phosphorus doping of the AIC was carried out by thermal diffusion from a solid source. The structural quality of the n-type Si film was monitored by optical microscope and scanning electron microscope (SEM). The doping efficiency was determined by resistivity measurements and secondary ion mass spectroscopy (SIMS). The sheet resitivity changed from 2700{omega}/sq to 19.6{omega}/sq after thermal diffusion at 950 deg. C for 1h, indicating the overdoping effect. The SIMS profile carried out after the high temperature epitaxy exhibits a two steps phosphorus distribution, indicating the formation of an n{sup +}n structure.

Passivated emitters in silicon solar cells

International Nuclear Information System (INIS)

King, R.R.; Gruenbaum, P.E.; Sinton, R.A.; Swanson, R.M.

1990-01-01

In high-efficiency silicon solar cells with low metal contact coverage fractions and high bulk lifetimes, cell performance is often dominated by recombination in the oxide-passivated diffusions on the cell surface. Measurements of the emitter saturation current density, J o , of oxide-passivated, boron and phosphorus diffusions are presented, and from these measurements, the dependence of surface recombination velocity on dopant concentration was extracted. The lowest observed values of J o which are stable under UV light are given for both boron- and phosphorus-doped, oxide-passivated diffusions, for both textured and untextured surfaces. Contour plots which incorporate the above data have been applied to two types of backside-contact solar cells with large area (37.5 cm 2 ) and one-sun efficiencies up to 22.7%

Ion beam studied of silicon oxynitride and silicon nitroxide thin layers

International Nuclear Information System (INIS)

Oude Elferink, J.B.

1989-01-01

In this the processes occurring during high temperature treatments of silicon oxynitride and silicon oxide layers are described. Oxynitride layers with various atomic oxygen to nitrogen concentration ration (O/N) are considered. The high energy ion beam techniques Rutherford backscattering spectroscopy, elastic recoil detection and nuclear reaction analysis have been used to study the layer structures. A detailed discussion of these ion beam techniques is given. Numerical methods used to obtain quantitative data on elemental compositions and depth profiles are described. The electrical compositions and depth profiles are described. The electrical properties of silicon nitride films are known to be influenced by the behaviour of hydrogen in the film during high temperature anneling. Investigations of the behaviour of hydrogen are presented. Oxidation of silicon (oxy)nitride films in O 2 /H 2 0/HCl and nitridation of silicon dioxide films in NH 3 are considered since oxynitrides are applied as an oxidation mask in the LOCOS (Local oxidation of silicon) process. The nitridation of silicon oxide layers in an ammonia ambient is considered. The initial stage and the dependence on the oxide thickness of nitrogen and hydrogen incorporation are discussed. Finally, oxidation of silicon oxynitride layers and of silicon oxide layers are compared. (author). 76 refs.; 48 figs.; 1 tab

Structural and elastic properties of porous silicon

Energy Technology Data Exchange (ETDEWEB)

Matthai, C C [Department of Physics and Astronomy, University of Wales College of Cardiff, Cardiff CF2 3YB (United Kingdom); Gavartin, J L [Department of Physics and Astronomy, University of Wales College of Cardiff, Cardiff CF2 3YB (United Kingdom); Cafolla, A A [Department of Physics, Dublin City University, Dublin (Ireland)

1995-01-15

We have implemented a modified diffusion-limited aggregation model to simulate the porous silicon structure obtained by electrochemical dissolution. The resulting fractal structures were fully equilibrated using the molecular dynamics method. An analysis of the relaxed structure shows it to be quite stable with the presence of one-, two- and three-coordinated atoms as well as the four-coordinated atoms found in bulk silicon. It is suggested that the different substructures or nanocrystals might be responsible for the observed photoluminescence. ((orig.))

Origins of hole traps in hydrogenated nanocrystalline and amorphous silicon revealed through machine learning

Science.gov (United States)

Mueller, Tim; Johlin, Eric; Grossman, Jeffrey C.

2014-03-01

Genetic programming is used to identify the structural features most strongly associated with hole traps in hydrogenated nanocrystalline silicon with very low crystalline volume fraction. The genetic programming algorithm reveals that hole traps are most strongly associated with local structures within the amorphous region in which a single hydrogen atom is bound to two silicon atoms (bridge bonds), near fivefold coordinated silicon (floating bonds), or where there is a particularly dense cluster of many silicon atoms. Based on these results, we propose a mechanism by which deep hole traps associated with bridge bonds may contribute to the Staebler-Wronski effect.

In-situ epitaxial growth of heavily phosphorus doped SiGe by low pressure chemical vapor deposition

CERN Document Server

Lee, C J

1998-01-01

We have studied epitaxial crystal growth of Si sub 1 sub - sub x Ge sub x films on silicon substrates at 550 .deg. C by low pressure chemical vapor deposition. In a low PH sub 3 partial pressure region such as below 1.25x10 sup - sup 3 Pa, both the phosphorus and carrier concentrations increased with increasing PH sub 3 partial pressure, but the deposition rate and the Ge fraction remained constant. In a higher PH sub 3 partial pressure region, the deposition rate, the phosphorus concentration, and the carrier concentration decreased, while the Ge fraction increased. These suggest that high surface coverage of phosphorus suppresses both SiH sub 4 and GeH sub 4 adsorption/reactions on the surfaces, and its suppression effect on SiH sub 4 is actually much stronger than on GeH sub 4. In particular, epitaxial crystal growth is largely controlled by surface coverage effect of phosphorus in a higher PH sub 3 partial pressure region.

Simulation of atomistic processes during silicon oxidation

OpenAIRE

Bongiorno, Angelo

2003-01-01

Silicon dioxide (SiO2) films grown on silicon monocrystal (Si) substrates form the gate oxides in current Si-based microelectronics devices. The understanding at the atomic scale of both the silicon oxidation process and the properties of the Si(100)-SiO2 interface is of significant importance in state-of-the-art silicon microelectronics manufacturing. These two topics are intimately coupled and are both addressed in this theoretical investigation mainly through first-principles calculations....

Phosphorus Doped Zn 1- x Mg x O Nanowire Arrays

KAUST Repository

Lin, S. S.; Hong, J. I.; Song, J. H.; Zhu, Y.; He, H. P.; Xu, Z.; Wei, Y. G.; Ding, Y.; Snyder, R. L.; Wang, Z. L.

2009-01-01

We demonstrate the growth of phosphorus doped Zn 1-xMg xO nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn 0.92Mg 0.08O:P NWs are likely obtained In reference to atomic force microscopy based piezoelectric output

Surface PIXE analysis of phosphorus in a thin SiO2 (P, B) CVD layer deposited onto Si substrate

International Nuclear Information System (INIS)

Roumie, M.; Nsouli, B.

2001-01-01

Phosphorus determination, at level of percent, in Si matrix is not an easy analytical task. The analyzed materials arc Borophosphosilicate glass which are an important component of silicon based semiconductor technology. It's a thin SiO2 layer (400 nm) doped with boron and phosphorus using, in general, CVD (Chemical Vapor Deposition) process, in order to improve its plasticity, and deposited onto Si substrate. Therefore, the mechanical behaviour of the CVD SiO2 (P, B) layer is very sensitive to the phosphorus concentration. In this work we explore the capability of FIXE (Particle Induced X-ray Emission) to monitor a rapid and accurate quantification of P which is usually very low in such materials (few percent of the thin CVD layer deposited onto a silicon substrate). A systematic study is undertaken using Proton (0.5-3 MeV energy) and helium (1-3 MeV energy) beams, different thickness of X-ray absorber (131 and 146 μm of Kapton filter) and different tilting angles (0,45,60 and 80 deg.). The optimized measurement conditions should improve the P signal detection comparing to the Si and Background ones

Relaxation of the Shallow Acceptor Center Magnetic Moment in a Highly Doped Silicon

CERN Document Server

Mamedov, T N; Herlach, D; Gorelkin, V N; Gritsaj, K I; Duginov, V N; Kormann, O; Major, J V; Stoikov, A V; Zimmermann, U

2001-01-01

Results on the temperature dependence of the residual polarization of negative muons in crystalline silicon with germanium, boron and phosphorus impurities are presented. The measurements were carried out in a magnetic field of 0.1 T transverse to the direction of the muon spin in the temperature range 4.2-300 K. It is found that in a silicon sample with a high concentration of germanium impurity (9\\cdot 10^{19} cm^{-3}), as in the samples of n- and p-type silicon with impurity concentrations up to \\sim 10^{17} cm^{-3}, the relaxation rate \

Atomic energy levels and Grotrian diagrams

CERN Document Server

Bashkin, Stanley

1975-01-01

Atomic Energy Levels and Grotrian Diagrams, Volume I: Hydrogen I - Phosphorus XV presents diagrams of various elements that show their energy level and electronic transitions. The book covers the first 15 elements according to their atomic number. The text will be of great use to researchers and practitioners of fields such as astrophysics that requires pictorial representation of the energy levels and electronic transitions of elements.

On the difference in oscillator strengths of inner shell excitations in noble gases and their alkali neighbors

International Nuclear Information System (INIS)

Amusia, M.Y.; Baltenkov, A.S.; Zhuravleva, G.I.

1995-01-01

It is demonstrated that the oscillator strength of resonant inner-shell excitation in a noble gas atom is considerably smaller than that in its alkali neighbor because in the latter case the effective charge acting upon excited electron is much bigger. With increase of the excitation's principal quantum number the difference between line intensities in noble gases and their alkali neighbors rapidly disappears. The calculations are performed in the Hartree-Fock approximation and with inclusion of rearrangement effects due to inner vacancy creation and its Auger decay. A paper has been submitted for publication

Phase transformation during silica cluster impact on crystal silicon substrate studied by molecular dynamics simulation

International Nuclear Information System (INIS)

Chen Ruling; Luo Jianbin; Guo Dan; Lu Xinchun

2008-01-01

The process of a silica cluster impact on a crystal silicon substrate is studied by molecular dynamics simulation. At the impact loading stage, crystal silicon of the impact zone transforms to a locally ordered molten with increasing the local temperature and pressure of the impact zone. And then the transient molten forms amorphous silicon directly as the local temperature and pressure decrease at the impact unloading stage. Moreover, the phase behavior between the locally ordered molten and amorphous silicon exhibits the reversible structural transition. The transient molten contains not only lots of four-fold atom but also many three- and five-fold atoms. And the five-fold atom is similar to the mixture structure of semi-Si-II and semi-bct5-Si. The structure transformation between five- and four-fold atoms is affected by both pressure and temperature. The structure transformation between three- and four-fold atoms is affected mostly by temperature. The direct structure transformation between five- and three-fold atoms is not observed. Finally, these five- and three-fold atoms are also different from the usual five- and three-fold deficient atoms of amorphous silicon. In addition, according to the change of coordination number of atoms the impact process is divided into six stages: elastic, plastic, hysteresis, phase regressive, adhesion and cooling stages

Double-walled silicon nanotubes: an ab initio investigation

Science.gov (United States)

Lima, Matheus P.

2018-02-01

The synthesis of silicon nanotubes realized in the last decade demonstrates multi-walled tubular structures consisting of Si atoms in {{sp}}2 and the {{sp}}3 hybridizations. However, most of the theoretical models were elaborated taking as the starting point {{sp}}2 structures analogous to carbon nanotubes. These structures are unfavorable due to the natural tendency of the Si atoms to undergo {{sp}}3. In this work, through ab initio simulations based on density functional theory, we investigated double-walled silicon nanotubes proposing layered tubes possessing most of the Si atoms in an {{sp}}3 hybridization, and with few {{sp}}2 atoms localized at the outer wall. The lowest-energy structures have metallic behavior. Furthermore, the possibility to tune the band structure with the application of a strain was demonstrated, inducing a metal-semiconductor transition. Thus, the behavior of silicon nanotubes differs significantly from carbon nanotubes, and the main source of the differences is the distortions in the lattice associated with the tendency of Si to make four chemical bonds.

Enhanced visible light photocatalytic degradation of Rhodamine B over phosphorus doped graphitic carbon nitride

Energy Technology Data Exchange (ETDEWEB)

Chai, Bo, E-mail: willycb@163.com; Yan, Juntao; Wang, Chunlei; Ren, Zhandong; Zhu, Yuchan

2017-01-01

Highlights: • The phosphorus doped g-C{sub 3}N{sub 4} photocatalysts are synthesized by a co-pyrolysis procedure. • The crystal phase, morphology, and optical property of P doped g-C{sub 3}N{sub 4} are characterized. • The P doped g-C{sub 3}N{sub 4} photocatalysts show the improved photocatalytic activity. • The possible mechanism for enhanced photocatalytic activity is proposed. - Abstract: Phosphorus doped graphitic carbon nitride (g-C{sub 3}N{sub 4}) was easily synthesized using ammonium hexafluorophosphate (NH{sub 4}PF{sub 6}) as phosphorus source, and ammonium thiocyanate (NH{sub 4}SCN) as g-C{sub 3}N{sub 4} precursor, through a direct thermal co-polycondensation procedure. The obtained phosphorus doped g-C{sub 3}N{sub 4} was characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectra (FTIR), UV–vis diffuse reflectance absorption spectra (UV-DRS), photoelectrochemical measurement and photoluminescence spectra (PL). The photocatalytic activities of phosphorus doped g-C{sub 3}N{sub 4} samples were evaluated by degradation of Rhodamine B (RhB) solution under visible light irradiation. The results showed that the phosphorus doped g-C{sub 3}N{sub 4} had a superior photocatalytic activity than that of pristine g-C{sub 3}N{sub 4}, attributing to the phosphorus atoms substituting carbon atoms of g-C{sub 3}N{sub 4} frameworks to result in light harvesting enhancement and delocalized π-conjugated system of this copolymer, beneficial for the increase of photocatalytic performance. The photoelectrochemical measurements also verified that the charge carrier separation efficiency was promoted by phosphorus doping g-C{sub 3}N{sub 4}. Moreover, the tests of radical scavengers demonstrated that the holes (h{sup +}) and superoxide radicals (·O{sub 2}{sup −}) were the main active species for the

Effects of radiation on hetero-atom-containing polyacetylenes

International Nuclear Information System (INIS)

Yamaoka, H.; Matsuyama, T.; Masuda, T.; Higashimura, T.

1991-01-01

The effects of radiation on several substituted polyacetylenes containing hetero-atoms such as silicon and chlorine were studied. All the polymers containing silicon atoms degraded in the presence of air, whereas no degradation proceeded in vacuo. In the case of polymers containing chlorine atoms, degradation and crosslinking occurred simultaneously, both in air and in vacuo. The reaction mode of these polymers was found to be strongly dependent on the nature of the substituents. The relationship between the radiation sensitivity and thermal stability of substituted polyacetylenes is discussed on the basis of the obtained results. (author)

A new computer-aided simulation model for polycrystalline silicon film resistors

Science.gov (United States)

Ching-Yuan Wu; Weng-Dah Ken

1983-07-01

A general transport theory for the I-V characteristics of a polycrystalline film resistor has been derived by including the effects of carrier degeneracy, majority-carrier thermionic-diffusion across the space charge regions produced by carrier trapping in the grain boundaries, and quantum mechanical tunneling through the grain boundaries. Based on the derived transport theory, a new conduction model for the electrical resistivity of polycrystalline film resitors has been developed by incorporating the effects of carrier trapping and dopant segregation in the grain boundaries. Moreover, an empirical formula for the coefficient of the dopant-segregation effects has been proposed, which enables us to predict the dependence of the electrical resistivity of phosphorus-and arsenic-doped polycrystalline silicon films on thermal annealing temperature. Phosphorus-doped polycrystalline silicon resistors have been fabricated by using ion-implantation with doses ranged from 1.6 × 10 11 to 5 × 10 15/cm 2. The dependence of the electrical resistivity on doping concentration and temperature have been measured and shown to be in good agreement with the results of computer simulations. In addition, computer simulations for boron-and arsenic-doped polycrystalline silicon resistors have also been performed and shown to be consistent with the experimental results published by previous authors.

Electroless deposition of Ni-P on a silicon surface

Directory of Open Access Journals (Sweden)

hassan El Grini

2017-06-01

Full Text Available The present article concerns the metallization of silicon substrates by deposition of the nickel-phosphorus alloy produced by an autocatalytic chemical process. The deposition electrolyte is composed of a metal salt, a reducing agent (sodium hypophosphite, a complexing agent (sodium citrate and a buffer (ammonium acetate. The deposition could only be carried out after activation of the silicon by fixing catalytic species on its surface. The immersion of the silicon samples in palladium chloride made it possible to produce relatively thick and regular Ni-P coatings. The immersion time was optimized. The activation of Si was characterized by XPS and the Ni-P coating by XPS and M.E.B. The electrochemical study did not show any real mechanism changes compared to the Ni-P deposition on a conductive surface. 

[Effects of phosphorus sources on phosphorus fractions in rhizosphere soil of wild barley genotypes with high phosphorus utilization efficiency].

Science.gov (United States)

Cai, Qiu-Yan; Zhang, Xi-Zhou; Li, Ting-Xuan; Chen, Guang-Deng

2014-11-01

High P-efficiency (IS-22-30, IS-22-25) and low P-efficiency (IS-07-07) wild barley cultivars were chosen to evaluate characteristics of phosphorus uptake and utilization, and properties of phosphorus fractions in rhizosphere and non-rhizosphere in a pot experiment with 0 (CK) and 30 mg P · kg(-1) supplied as only Pi (KH2PO4), only Po (phytate) or Pi + Po (KH2PO4+ phytate). The results showed that dry matter and phosphorus accumulation of wild barley in the different treatments was ranked as Pi > Pi + Po > Po > CK. In addition, dry matter yield and phosphorus uptake of wild barley with high P-efficiency exhibited significantly greater than that with low P-efficiency. The concentration of soil available phosphorus was significantly different after application of different phosphorus sources, which was presented as Pi > Pi + Po > Po. The concentration of soil available phosphorus in high P-efficiency wild barley was significantly higher than that of low P-efficiency in the rhizosphere soil. There was a deficit in rhizosphere available phosphorus of high P-efficiency wild barley, especially in Pi and Pi+Po treatments. The inorganic phosphorus fractions increased with the increasing Pi treatment, and the concentrations of inorganic phosphorus fractions in soil were sorted as follows: Ca10-P > O-P > Fe-P > Al-P > Ca2-P > Ca8-P. The contents of Ca2-P and Ca8-P for high P-efficiency wild barley showed deficits in rhizosphere soil under each phosphorus source treatment. In addition, enrichment of Al-P and Fe-P was observed in Pi treatment in rhizosphere soil. The concentrations of organic phosphorus fractions in soil were sorted as follows: moderate labile organic phosphorus > moderate resistant, resistant organic phosphorus > labile organic phosphorus. The labile and moderate labile organic phosphorus enriched in rhizosphere soil and the greatest enrichment appeared in Pi treatment. Furthermore, the concentrations of moderate resistant organic phosphorus and resistant

Synthesis of Silicon Nanocrystals in Microplasma Reactor

Science.gov (United States)

Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

Nanocrystalline silicon particles with a grain size of at least less than 10 nm are widely recognized as one of the key materials in optoelectronic devices, electrodes of lithium battery, bio-medical labels. There is also important character that silicon is safe material to the environment and easily gets involved in existing silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. We explore the possibility of microplasma technologies for the efficient production of mono-dispersed nanocrystalline silicon particles in a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using very high frequency (VHF = 144 MHz) power source in a capillary glass tube with a volume of less than 1 μ-liter. Fundamental plasma parameters of VHF capacitively coupled microplasma were characterized by optical emission spectroscopy, showing electron density of approximately 1015 cm-3 and rotational temperature of 1500 K, respectively. Such high-density non-thermal reactive plasma has a capability of decomposing silicon tetrachloride into atomic silicon to produce supersaturated atomic silicon vapor, followed by gas phase nucleation via three-body collision. The particle synthesis in high-density plasma media is beneficial for promoting nucleation process. In addition, further growth of silicon nuclei was able to be favorably terminated in a short-residence time reactor. Micro Raman scattering spectrum showed that as-deposited particles were mostly amorphous silicon with small fraction of silicon nanocrystals. Transmission electron micrograph confirmed individual silicon nanocrystals of 3-15 nm size. Although those particles were not mono-dispersed, they were

Spectral neighbor analysis method for automated generation of quantum-accurate interatomic potentials

International Nuclear Information System (INIS)

Thompson, A.P.; Swiler, L.P.; Trott, C.R.; Foiles, S.M.; Tucker, G.J.

2015-01-01

We present a new interatomic potential for solids and liquids called Spectral Neighbor Analysis Potential (SNAP). The SNAP potential has a very general form and uses machine-learning techniques to reproduce the energies, forces, and stress tensors of a large set of small configurations of atoms, which are obtained using high-accuracy quantum electronic structure (QM) calculations. The local environment of each atom is characterized by a set of bispectrum components of the local neighbor density projected onto a basis of hyperspherical harmonics in four dimensions. The bispectrum components are the same bond-orientational order parameters employed by the GAP potential [1]. The SNAP potential, unlike GAP, assumes a linear relationship between atom energy and bispectrum components. The linear SNAP coefficients are determined using weighted least-squares linear regression against the full QM training set. This allows the SNAP potential to be fit in a robust, automated manner to large QM data sets using many bispectrum components. The calculation of the bispectrum components and the SNAP potential are implemented in the LAMMPS parallel molecular dynamics code. We demonstrate that a previously unnoticed symmetry property can be exploited to reduce the computational cost of the force calculations by more than one order of magnitude. We present results for a SNAP potential for tantalum, showing that it accurately reproduces a range of commonly calculated properties of both the crystalline solid and the liquid phases. In addition, unlike simpler existing potentials, SNAP correctly predicts the energy barrier for screw dislocation migration in BCC tantalum

Spectral neighbor analysis method for automated generation of quantum-accurate interatomic potentials

Energy Technology Data Exchange (ETDEWEB)

Thompson, Aidan P. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States). Multiscale Science Dept.; Swiler, Laura P. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States). Optimization and Uncertainty Quantification Dept.; Trott, Christian R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Scalable Algorithms Dept.; Foiles, Stephen M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Computational Materials and Data Science Dept.; Tucker, Garritt J. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Computational Materials and Data Science Dept.; Drexel Univ., Philadelphia, PA (United States). Dept. of Materials Science and Engineering

2015-03-15

Here, we present a new interatomic potential for solids and liquids called Spectral Neighbor Analysis Potential (SNAP). The SNAP potential has a very general form and uses machine-learning techniques to reproduce the energies, forces, and stress tensors of a large set of small configurations of atoms, which are obtained using high-accuracy quantum electronic structure (QM) calculations. The local environment of each atom is characterized by a set of bispectrum components of the local neighbor density projected onto a basis of hyperspherical harmonics in four dimensions. The bispectrum components are the same bond-orientational order parameters employed by the GAP potential [1]. The SNAP potential, unlike GAP, assumes a linear relationship between atom energy and bispectrum components. The linear SNAP coefficients are determined using weighted least-squares linear regression against the full QM training set. This allows the SNAP potential to be fit in a robust, automated manner to large QM data sets using many bispectrum components. The calculation of the bispectrum components and the SNAP potential are implemented in the LAMMPS parallel molecular dynamics code. We demonstrate that a previously unnoticed symmetry property can be exploited to reduce the computational cost of the force calculations by more than one order of magnitude. We present results for a SNAP potential for tantalum, showing that it accurately reproduces a range of commonly calculated properties of both the crystalline solid and the liquid phases. In addition, unlike simpler existing potentials, SNAP correctly predicts the energy barrier for screw dislocation migration in BCC tantalum.

Spectral neighbor analysis method for automated generation of quantum-accurate interatomic potentials

Energy Technology Data Exchange (ETDEWEB)

Thompson, A.P., E-mail: athomps@sandia.gov [Multiscale Science Department, Sandia National Laboratories, PO Box 5800, MS 1322, Albuquerque, NM 87185 (United States); Swiler, L.P., E-mail: lpswile@sandia.gov [Optimization and Uncertainty Quantification Department, Sandia National Laboratories, PO Box 5800, MS 1318, Albuquerque, NM 87185 (United States); Trott, C.R., E-mail: crtrott@sandia.gov [Scalable Algorithms Department, Sandia National Laboratories, PO Box 5800, MS 1322, Albuquerque, NM 87185 (United States); Foiles, S.M., E-mail: foiles@sandia.gov [Computational Materials and Data Science Department, Sandia National Laboratories, PO Box 5800, MS 1411, Albuquerque, NM 87185 (United States); Tucker, G.J., E-mail: gtucker@coe.drexel.edu [Computational Materials and Data Science Department, Sandia National Laboratories, PO Box 5800, MS 1411, Albuquerque, NM 87185 (United States); Department of Materials Science and Engineering, Drexel University, Philadelphia, PA 19104 (United States)

2015-03-15

We present a new interatomic potential for solids and liquids called Spectral Neighbor Analysis Potential (SNAP). The SNAP potential has a very general form and uses machine-learning techniques to reproduce the energies, forces, and stress tensors of a large set of small configurations of atoms, which are obtained using high-accuracy quantum electronic structure (QM) calculations. The local environment of each atom is characterized by a set of bispectrum components of the local neighbor density projected onto a basis of hyperspherical harmonics in four dimensions. The bispectrum components are the same bond-orientational order parameters employed by the GAP potential [1]. The SNAP potential, unlike GAP, assumes a linear relationship between atom energy and bispectrum components. The linear SNAP coefficients are determined using weighted least-squares linear regression against the full QM training set. This allows the SNAP potential to be fit in a robust, automated manner to large QM data sets using many bispectrum components. The calculation of the bispectrum components and the SNAP potential are implemented in the LAMMPS parallel molecular dynamics code. We demonstrate that a previously unnoticed symmetry property can be exploited to reduce the computational cost of the force calculations by more than one order of magnitude. We present results for a SNAP potential for tantalum, showing that it accurately reproduces a range of commonly calculated properties of both the crystalline solid and the liquid phases. In addition, unlike simpler existing potentials, SNAP correctly predicts the energy barrier for screw dislocation migration in BCC tantalum.

Spectroscopic characterization of TeF and oxygen chemisorption onto silicon (111)

International Nuclear Information System (INIS)

Newlin, D.E.

1979-01-01

Chemiluminescence from the reactions of H 2 Te and D 2 Te with fluorine was observed at 3900 to 8600 A. Two separate band systems are attributed to the B 2 Σ-X 2 π and A 2 π-X 2 π transitions of the TeF radical. Moessbauer spectra were obtained of H 2 Te and D 2 Te in an argon matrix, and of TeF produced in the reaction of hydrogen telluride with fluorine. These are discussed with respect to the isotope effect and electron density calculations for the tellurium nucleus. Kinetics of chemisorption of oxygen on a silicon (111) surface were studied at 298 to 473 0 K using ESCA. Results are interpreted assuming immobile adsorption requiring two nearest neighbor surface sites. The initial sticking coefficient (theta << 1) is found to be S approx. = 0.1, and the activation energy of adsorption is determined as E/sub a/ = 1.6 +- 0.3 kcal/mole at theta = 0.4. Higher values of the sticking coefficient are obtained when the surface is contaminated with carbon produced at heated filaments in the vacuum system, so any consideration of oxygen adsorption onto an atomically clean silicon surface should use the lower values of the sticking coefficient reported in the literature. Results of this study are consistent with a model for oxygen chemisorption involving two surface sites per oxygen molecule

Identifying influential neighbors in animal flocking.

Directory of Open Access Journals (Sweden)

Li Jiang

2017-11-01

Full Text Available Schools of fish and flocks of birds can move together in synchrony and decide on new directions of movement in a seamless way. This is possible because group members constantly share directional information with their neighbors. Although detecting the directionality of other group members is known to be important to maintain cohesion, it is not clear how many neighbors each individual can simultaneously track and pay attention to, and what the spatial distribution of these influential neighbors is. Here, we address these questions on shoals of Hemigrammus rhodostomus, a species of fish exhibiting strong schooling behavior. We adopt a data-driven analysis technique based on the study of short-term directional correlations to identify which neighbors have the strongest influence over the participation of an individual in a collective U-turn event. We find that fish mainly react to one or two neighbors at a time. Moreover, we find no correlation between the distance rank of a neighbor and its likelihood to be influential. We interpret our results in terms of fish allocating sequential and selective attention to their neighbors.

Identifying influential neighbors in animal flocking.

Science.gov (United States)

Jiang, Li; Giuggioli, Luca; Perna, Andrea; Escobedo, Ramón; Lecheval, Valentin; Sire, Clément; Han, Zhangang; Theraulaz, Guy

2017-11-01

Schools of fish and flocks of birds can move together in synchrony and decide on new directions of movement in a seamless way. This is possible because group members constantly share directional information with their neighbors. Although detecting the directionality of other group members is known to be important to maintain cohesion, it is not clear how many neighbors each individual can simultaneously track and pay attention to, and what the spatial distribution of these influential neighbors is. Here, we address these questions on shoals of Hemigrammus rhodostomus, a species of fish exhibiting strong schooling behavior. We adopt a data-driven analysis technique based on the study of short-term directional correlations to identify which neighbors have the strongest influence over the participation of an individual in a collective U-turn event. We find that fish mainly react to one or two neighbors at a time. Moreover, we find no correlation between the distance rank of a neighbor and its likelihood to be influential. We interpret our results in terms of fish allocating sequential and selective attention to their neighbors.

Comparison of confinement characters between porous silicon and silicon nanowires

International Nuclear Information System (INIS)

Tit, Nacir; Yamani, Zain H.; Pizzi, Giovanni; Virgilio, Michele

2011-01-01

Confinement character and its effects on photoluminescence (PL) properties are theoretically investigated and compared between porous silicon (p-Si) and silicon nanowires (Si-NWs). The method is based on the application of the tight-binding technique using the minimal sp 3 -basis set, including the second-nearest-neighbor interactions. The results show that the quantum confinement (QC) is not entirely controlled by the porosity, rather it is mainly affected by the average distance between pores (d). The p-Si is found to exhibit weaker confinement character than Si-NWs. The confinement energy of charge carriers decays against d exponentially for p-Si and via a power-law for Si-NWs. This latter type of QC is much stronger and is somewhat similar to the case of a single particle in a quantum box. The excellent fit to the PL data demonstrates that the experimental samples of p-Si do exhibit strong QC character and thus reveals the possibility of silicon clustering into nano-crystals and/or nanowires. Furthermore, the results show that the passivation of the surface dangling bonds by the hydrogen atoms plays an essential role in preventing the appearance of gap states and consequently enhances the optical qualities of the produced structures. The oscillator strength (OS) is found to increase exponentially with energy in Si-NWs confirming the strong confinement character of carriers. Our theoretical findings suggest the existence of Si nanocrystals (Si-NCs) of sizes 1-3 nm and/or Si-NWs of cross-sectional sizes in the 1-3 nm range inside the experimental p-Si samples. The experimentally-observed strong photoluminescence from p-Si should be in favor of an exhibition of 3D-confinement character. The favorable comparison of our theoretical results with the experimental data consolidates our above claims. -- Highlights: → Tight-binding is used to study quantum-confinement (QC) effects in p-Si and Si-NWs. → QC is not entirely controlled by the porosity but also by the d

The effect of phosphorus and sulfur treatment on the surface properties of InP

Science.gov (United States)

Iyer, R.; Chang, R. R.; Dubey, A.; Lile, D. L.

1988-01-01

Experimental results are presented for InP surfaces treated by using red phosphorus as a source to create an excess overpressure of phosphorus during annealing and prior to silicon dioxide deposition. The surface has been probed by in situ photoluminescence, noncontacting remote gate C-V, and conventional high-frequency and quasi-static C-V methods. A study has also been made of the surface of sulfurized InP following heating in aqueous (NH4)2S(x). MISFETs fabricated using the benefits of these surface treatments show high transconductances and stabilities approaching those of thermal SiO2/Si with less than 5-percent variation in drain current over a 12-hr period.

TEM study of the ion beam induced damage during 14 kev P+ implantation in silicon

International Nuclear Information System (INIS)

Rubanov, S.; Tamanyan, G.; Hudson, F.; Jamieson, D.N.; McCallum, J.C.; Prawer, S.

2005-01-01

The proposed silicon-based quantum computer architecture comprises an array of phosphorus donor atoms (qubits) positioned with nanometre accuracy beneath the surface of a semiconductor host, using a single ion implantation technique. The average depth of the implanted ions (the projected range R p ), lateral range R p 1, and the distribution of ions about that depth can be approximated as two-dimensional Gaussian with standard deviation ΔR p and ΔR p 1 (lateral straggle). Using transmission electron microscopy (TEM) we studied ion beam induced damage after 14 keV P + implantation in Si. The TEM images allowed us to compare the depth of the amorphous cluster formation to R p , R p 1, ΔR p 1 calculated from SRIM and hence determine evidence for the limitation on the accuracy of the position of the implanted ions imposed by straggling. (author). 4 refs., 3 figs

Combined Effects of Phytoestrogen Genistein and Silicon on Ovariectomy-Induced Bone Loss in Rat.

Science.gov (United States)

Qi, Shanshan; Zheng, Hongxing

2017-06-01

This study was performed to evaluate the effect of concomitant supplementation of genistein and silicon on bone mineral density and bone metabolism-related markers in ovariectomized rat. Three-month-old Sprague Dawley female rats were subjected to bilateral ovariectomy (OVX) or sham surgery, and then the OVX rats were randomly divided into four groups: OVX-GEN, OVX-Si, OVX-GEN-Si, and OVX. Genistein and silicon supplementation was started immediately after OVX and continued for 10 weeks. In the OVX-GEN group, 5 mg genistein per gram body weight was injected subcutaneously. The OVX-Si group was given soluble silicon daily in demineralized water (Si 20 mg/kg body weight/day). The OVX-GEN-Si group was given subcutaneous injections of 5 mg genistein per gram body weight, at the same time, given soluble silicon daily (Si 20 mg/kg body weight/day). The results showed that the genistein supplementation in the OVX rats significantly prevented the loss of uterus weight; however, the silicon supplementation showed no effect on the uterus weight loss. The lumbar spine and femur bone mineral density was significantly decreased after OVX surgery; however, this decrease was inhibited by the genistein and/or silicon, and the BMD of the lumbar spine and femur was the highest in the OVX-GEN-Si-treated group. Histomorphometric analyses showed that the supplementation of genistein and/or silicon restored bone volume and trabecular thickness of femoral trabecular bone in the OVX group. Besides, the treatment with genistein and silicon for 10 weeks increased the serum levels of calcium and phosphorus in the OVX rats; serum calcium and serum phosphorus in the OVX-GEN-Si group were higher than those in the OVX-GEN and OVX-Si group (P silicon decreased serum alkaline phosphatase (ALP) and osteocalcin, which were increased by ovariectomy; serum ALP and osteocalcin in the OVX-GEN-Si group were lower than those in the OVX-GEN and OVX-Si groups (P silicon have synergistic effects on

Electronic structures and thermochemical properties of the small silicon-doped boron clusters B(n)Si (n=1-7) and their anions.

Science.gov (United States)

Tai, Truong Ba; Kadłubański, Paweł; Roszak, Szczepan; Majumdar, Devashis; Leszczynski, Jerzy; Nguyen, Minh Tho

2011-11-18

We perform a systematic investigation on small silicon-doped boron clusters B(n)Si (n=1-7) in both neutral and anionic states using density functional (DFT) and coupled-cluster (CCSD(T)) theories. The global minima of these B(n)Si(0/-) clusters are characterized together with their growth mechanisms. The planar structures are dominant for small B(n)Si clusters with n≤5. The B(6)Si molecule represents a geometrical transition with a quasi-planar geometry, and the first 3D global minimum is found for the B(7)Si cluster. The small neutral B(n)Si clusters can be formed by substituting the single boron atom of B(n+1) by silicon. The Si atom prefers the external position of the skeleton and tends to form bonds with its two neighboring B atoms. The larger B(7)Si cluster is constructed by doping Si-atoms on the symmetry axis of the B(n) host, which leads to the bonding of the silicon to the ring boron atoms through a number of hyper-coordination. Calculations of the thermochemical properties of B(n)Si(0/-) clusters, such as binding energies (BE), heats of formation at 0 K (ΔH(f)(0)) and 298 K (ΔH(f)([298])), adiabatic (ADE) and vertical (VDE) detachment energies, and dissociation energies (D(e)), are performed using the high accuracy G4 and complete basis-set extrapolation (CCSD(T)/CBS) approaches. The differences of heats of formation (at 0 K) between the G4 and CBS approaches for the B(n)Si clusters vary in the range of 0.0-4.6 kcal mol(-1). The largest difference between two approaches for ADE values is 0.15 eV. Our theoretical predictions also indicate that the species B(2)Si, B(4)Si, B(3)Si(-) and B(7)Si(-) are systems with enhanced stability, exhibiting each a double (σ and π) aromaticity. B(5)Si(-) and B(6)Si are doubly antiaromatic (σ and π) with lower stability. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Scaling theory put into practice: First-principles modeling of transport in doped silicon nanowires

DEFF Research Database (Denmark)

Markussen, Troels; Rurali, R.; Jauho, Antti-Pekka

2007-01-01

We combine the ideas of scaling theory and universal conductance fluctuations with density-functional theory to analyze the conductance properties of doped silicon nanowires. Specifically, we study the crossover from ballistic to diffusive transport in boron or phosphorus doped Si nanowires...

Characterisation and quantification of organic phosphorus and organic nitrogen components in aquatic systems: A Review

Energy Technology Data Exchange (ETDEWEB)

Worsfold, Paul J. [School of Earth, Ocean and Environmental Sciences, University of Plymouth, Drake Circus, Plymouth PL48AA (United Kingdom)], E-mail: pworsfold@plymouth.ac.uk; Monbet, Philippe [School of Earth, Ocean and Environmental Sciences, University of Plymouth, Drake Circus, Plymouth PL48AA (United Kingdom); Water Studies Centre, School of Chemistry, Monash University, Clayton 3800, Victoria (Australia); Tappin, Alan D.; Fitzsimons, Mark F.; Stiles, David A. [School of Earth, Ocean and Environmental Sciences, University of Plymouth, Drake Circus, Plymouth PL48AA (United Kingdom); McKelvie, Ian D. [Water Studies Centre, School of Chemistry, Monash University, Clayton 3800, Victoria (Australia)

2008-08-22

This review provides a critical assessment of knowledge regarding the determination of organic phosphorus (OP) and organic nitrogen (ON) in aquatic systems, with an emphasis on biogeochemical considerations and analytical challenges. A general background on organic phosphorus and organic nitrogen precedes a discussion of sample collection, extraction, treatment/conditioning and preconcentration of organic phosphorus/nitrogen from sediments, including suspended particulate matter, and waters, including sediment porewaters. This is followed by sections on the determination of organic phosphorus/nitrogen components. Key techniques covered for organic phosphorus components are molecular spectrometry, atomic spectrometry and enzymatic methods. For nitrogen the focus is on the measurement of total organic nitrogen concentrations by carbon hydrogen nitrogen analysis and high temperature combustion, and organic nitrogen components by gas chromatography, high-performance liquid chromatography, gel electrophoresis, mass spectrometry, nuclear magnetic resonance spectrometry, X-ray techniques and enzymatic methods. Finally future trends and needs are discussed and recommendations made.

Development for the production of low phosphorus steel in operations at Arcelor Mittal Tubarao

Energy Technology Data Exchange (ETDEWEB)

Luiz-Correa, W.; Silva-Furtado, H.; Oliveira, J. R. de

2013-06-01

The growing demand to produce steel with lower phosphorus (P) content happens in tandem with the increase in the content of this element in the ores used in the production of pig iron, leading to a constant evolution in the process of steel dephosphorization in BOF converters. Arcelor Mittal Tubarao (AMT), located in the municipality of Serra, Brazil, currently produces 5 million t of steel, but has an installed capacity of 7.5 million. This work aims at showing the development carried out in the dephosphorization of silicon-aluminium killed steel produced in the Arcelor Mittal Tubarao converters. The analysis of process variables such as flux addition, oxygen lance position and temperature at the end of blow are based on classical phosphorus partition models. The results compare phosphorus values in liquid steel before and after modifications in the variables and the refractory wear caused by the new procedures applied to AMT steelmaking converters. (Author)

Silicon containing copolymers

CERN Document Server

Amiri, Sahar; Amiri, Sanam

2014-01-01

Silicones have unique properties including thermal oxidative stability, low temperature flow, high compressibility, low surface tension, hydrophobicity and electric properties. These special properties have encouraged the exploration of alternative synthetic routes of well defined controlled microstructures of silicone copolymers, the subject of this Springer Brief. The authors explore the synthesis and characterization of notable block copolymers. Recent advances in controlled radical polymerization techniques leading to the facile synthesis of well-defined silicon based thermo reversible block copolymers?are described along with atom transfer radical polymerization (ATRP), a technique utilized to develop well-defined functional thermo reversible block copolymers. The brief also focuses on Polyrotaxanes and their great potential as stimulus-responsive materials which produce poly (dimethyl siloxane) (PDMS) based thermo reversible block copolymers.

External self-gettering of nickel in float zone silicon wafers

Science.gov (United States)

Gay, N.; Martinuzzi, S.

1997-05-01

During indiffusion of Ni atoms in silicon crystals at 950 °C from a nickel layer source, Ni-Si alloys can be formed close to the surface. Metal solubility in these alloys is higher than in silicon, which induces a marked segregation gettering of the Ni atoms which have diffused in the bulk of the wafers. Consequently, the regions of the wafers covered with the Ni layer are less contaminated than adjacent regions in which Ni atoms have also penetrated, as shown by the absence of precipitates and the higher diffusion length of minority carriers. The results suggest the existence of external self-gettering of Ni atoms by the nickel source.

Metastable and bistable defects in silicon

International Nuclear Information System (INIS)

Mukashev, Bulat N; Abdullin, Kh A; Gorelkinskii, Yurii V

2000-01-01

Existing data on the properties and structure of metastable and bistable defects in silicon are analyzed. Primary radiation-induced defects (vacancies, self-interstitial atoms, and Frenkel pairs), complexes of oxygen, carbon, hydrogen, and other impurity atoms and defects with negative correlation energy are considered. (reviews of topical problems)

Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

Energy Technology Data Exchange (ETDEWEB)

Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca [Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute, Griffith University, Nathan QLD 4111 (Australia); Boeckl, John J. [Materials and Manufacturing Directorate, Air Force Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433 (United States); Hellerstedt, Jack; Fuhrer, Michael S. [Monash Centre for Atomically Thin Materials, Monash University, Monash, VIC 3800 (Australia)

2016-07-04

Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

High-gain bipolar detector on float-zone silicon

Science.gov (United States)

Han, D. J.; Batignani, G.; Del Guerra, A.; Dalla Betta, G.-F.; Boscardin, M.; Bosisio, L.; Giorgi, M.; Forti, F.

2003-10-01

Since the float-zone (FZ) silicon has lower contaminations and longer minority-carrier lifetime than those in Czochralski silicon and other semiconductor materials, it has potential advantages to fabricate bipolar detectors on the high-purity FZ silicon substrate to achieve a high gain at ultra-low-signal levels. The authors present preliminary experimental results on a bipolar detector fabricated on an unusual high-purity FZ silicon substrate. A backside gettering layer of phosphorus-doped polysilicon was employed to preserve the long carrier lifetime of the high-purity FZ silicon. The device has been investigated in the detection of a continuous flux of X-ray and infrared light. The bipolar detector with a circular emitter of 2 mm diameter has demonstrated high gains up to 3820 for 22 keV X-ray from a 1 mCi Cd radioactive source (the X-ray photon flux, received by the detector is estimated to be ˜7.77×10 4/s). High gain up to 4400 for 0.17 nW light with a wavelength of 0.83 μm has been observed for the same device.

High-gain bipolar detector on float-zone silicon

International Nuclear Information System (INIS)

Han, D.J.; Batignani, G.; Guerra, A.D.A. Del; Dalla Betta, G.-F.; Boscardin, M.; Bosisio, L.; Giorgi, M.; Forti, F.

2003-01-01

Since the float-zone (FZ) silicon has lower contaminations and longer minority-carrier lifetime than those in Czochralski silicon and other semiconductor materials, it has potential advantages to fabricate bipolar detectors on the high-purity FZ silicon substrate to achieve a high gain at ultra-low-signal levels. The authors present preliminary experimental results on a bipolar detector fabricated on an unusual high-purity FZ silicon substrate. A backside gettering layer of phosphorus-doped polysilicon was employed to preserve the long carrier lifetime of the high-purity FZ silicon. The device has been investigated in the detection of a continuous flux of X-ray and infrared light. The bipolar detector with a circular emitter of 2 mm diameter has demonstrated high gains up to 3820 for 22 keV X-ray from a 1 mCi Cd radioactive source (the X-ray photon flux, received by the detector is estimated to be ∼7.77x10 4 /s). High gain up to 4400 for 0.17 nW light with a wavelength of 0.83 μm has been observed for the same device

Radiation Hardening of Silicon Detectors

CERN Multimedia

Leroy, C; Glaser, M

2002-01-01

%RD48 %title\\\\ \\\\Silicon detectors will be widely used in experiments at the CERN Large Hadron Collider where high radiation levels will cause significant bulk damage. In addition to increased leakage current and charge collection losses worsening the signal to noise, the induced radiation damage changes the effective doping concentration and represents the limiting factor to long term operation of silicon detectors. The objectives are to develop radiation hard silicon detectors that can operate beyond the limits of the present devices and that ensure guaranteed operation for the whole lifetime of the LHC experimental programme. Radiation induced defect modelling and experimental results show that the silicon radiation hardness depends on the atomic impurities present in the initial monocrystalline material.\\\\ \\\\ Float zone (FZ) silicon materials with addition of oxygen, carbon, nitrogen, germanium and tin were produced as well as epitaxial silicon materials with epilayers up to 200 $\\mu$m thickness. Their im...

Atomistic modeling of an impurity element and a metal-impurity system: pure P and Fe-P system

International Nuclear Information System (INIS)

Ko, Won-Seok; Lee, Byeong-Joo; Kim, Nack J

2012-01-01

An interatomic potential for pure phosphorus, an element that has van der Waals, covalent and metallic bonding character, simultaneously, has been developed for the purpose of application to metal-phosphorus systems. As a simplification, the van der Waals interaction, which is less important in metal-phosphorus systems, was omitted in the parameterization process and potential formulation. On the basis of the second-nearest-neighbor modified embedded-atom method (2NN MEAM) interatomic potential formalism applicable to both covalent and metallic materials, a potential that can describe various fundamental physical properties of a wide range of allotropic or transformed crystalline structures of pure phosphorus could be developed. The potential was then extended to the Fe-P binary system describing various physical properties of intermetallic compounds, bcc and liquid alloys, and also the segregation tendency of phosphorus on grain boundaries of bcc iron, in good agreement with experimental information. The suitability of the present potential and the parameterization process for atomic scale investigations about the effects of various non-metallic impurity elements on metal properties is demonstrated. (paper)

n-type diamond growth by phosphorus doping on (0 0 1)-oriented surface

International Nuclear Information System (INIS)

Kato, Hiromitsu; Makino, Toshiharu; Yamasaki, Satoshi; Okushi, Hideyo

2007-01-01

The properties of phosphorus incorporation for n-type doping of diamond are discussed and summarized. Doping of (0 0 1)-oriented diamond is introduced and compared with results achieved on (1 1 1) diamond. This review describes detailed procedures and conditions of plasma-enhanced chemical vapour deposition (CVD) growth and characteristics of electrical properties of phosphorus-doped diamond. The phosphorus incorporation was characterized by SIMS analysis including mapping. n-type conductivity is evaluated by Hall-effect measurements over a temperature regime of 300-1000 K. The crystal perfection of (0 0 1)-oriented n-type diamond is also evaluated by x-ray diffraction, Raman spectroscopy, reflection high-energy electron diffraction and cathodoluminescence analyses. The results show that phosphorus atoms are incorporated into the diamond network during (0 0 1) CVD diamond growth and that phosphorus acts as a donor as in (1 1 1)-oriented diamond. This result eliminates the restriction on substrate orientation, which had previously created a bottleneck in the development of diamond electronic devices. (review article)

Trapped atoms along nanophotonic resonators

Science.gov (United States)

Fields, Brian; Kim, May; Chang, Tzu-Han; Hung, Chen-Lung

2017-04-01

Many-body systems subject to long-range interactions have remained a very challenging topic experimentally. Ultracold atoms trapped in extreme proximity to the surface of nanophotonic structures provides a dynamic system combining the strong atom-atom interactions mediated by guided mode photons with the exquisite control implemented with trapped atom systems. The hybrid system promises pair-wise tunability of long-range interactions between atomic pseudo spins, allowing studies of quantum magnetism extending far beyond nearest neighbor interactions. In this talk, we will discuss our current status developing high quality nanophotonic ring resonators, engineered on CMOS compatible optical chips with integrated nanostructures that, in combination with a side illuminating beam, can realize stable atom traps approximately 100nm above the surface. We will report on our progress towards loading arrays of cold atoms near the surface of these structures and studying atom-atom interaction mediated by photons with high cooperativity.

The fabrication of a double-layer atom chip with through silicon vias for an ultra-high-vacuum cell

International Nuclear Information System (INIS)

Chuang, Ho-Chiao; Lin, Yun-Siang; Lin, Yu-Hsin; Huang, Chi-Sheng

2014-01-01

This study presents a double-layer atom chip that provides users with increased diversity in the design of the wire patterns and flexibility in the design of the magnetic field. It is more convenient for use in atomic physics experiments. A negative photoresist, SU-8, was used as the insulating layer between the upper and bottom copper wires. The electrical measurement results show that the upper and bottom wires with a width of 100 µm can sustain a 6 A current without burnout. Another focus of this study is the double-layer atom chips integrated with the through silicon via (TSV) technique, and anodically bonded to a Pyrex glass cell, which makes it a desired vacuum chamber for atomic physics experiments. Thus, the bonded glass cell not only significantly reduces the overall size of the ultra-high-vacuum (UHV) chamber but also conducts the high current from the backside to the front side of the atom chip via the TSV under UHV (9.5 × 10 −10  Torr). The TSVs with a diameter of 70 µm were etched through by the inductively coupled plasma ion etching and filled by the bottom-up copper electroplating method. During the anodic bonding process, the electroplated copper wires and TSVs on atom chips also need to pass the examination of the required bonding temperature of 250 °C, under an applied voltage of 1000 V. Finally, the UHV test of the double-layer atom chips with TSVs at room temperature can be reached at 9.5 × 10 −10  Torr, thus satisfying the requirements of atomic physics experiments under an UHV environment. (paper)

Nanoscale fabrication and characterization of chemically modified silicon surfaces using conductive atomic force microscopy in liquids

Science.gov (United States)

Kinser, Christopher Reagan

This dissertation examines the modification and characterization of hydrogen-terminated silicon surfaces in organic liquids. Conductive atomic force microscope (cAFM) lithography is used to fabricate structures with sub-100 nm line width on H:Si(111) in n-alkanes, 1-alkenes, and 1-alkanes. Nanopatterning is accomplished by applying a positive (n-alkanes and 1-alkenes) or a negative (1-alkanes) voltage pulse to the silicon substrate with the cAFM tip connected to ground. The chemical and kinetic behavior of the patterned features is characterized using AFM, lateral force microscopy, time-of-flight secondary ion mass spectroscopy (TOF SIMS), and chemical etching. Features patterned in hexadecane, 1-octadecene, and undecylenic acid methyl ester exhibited chemical and kinetic behavior consistent with AFM field induced oxidation. The oxide features are formed due to capillary condensation of a water meniscus at the AFM tip-sample junction. A space-charge limited growth model is proposed to explain the observed growth kinetics. Surface modifications produced in the presence of neat 1-dodecyne and 1-octadecyne exhibited a reduced lateral force compared to the background H:Si(111) substrate and were resistant to a hydrofluoric acid etch, characteristics which indicate that the patterned features are not due to field induced oxidation and which are consistent with the presence of the methyl-terminated 1-alkyne bound directly to the silicon surface through silicon-carbon bonds. In addition to the cAFM patterned surfaces, full monolayers of undecylenic acid methyl ester (SAM-1) and undec-10-enoic acid 2-bromoethyl ester (SAM-2) were grown on H:Si(111) substrates using ultraviolet light. The structure and chemistry of the monolayers were characterized using AFM, TOF SIMS, X-ray photoelectron spectroscopy (XPS), X-ray reflectivity (XRR), X-ray standing waves (XSW), and X-ray fluorescence (XRF). These combined analyses provide evidence that SAM-1 and SAM-2 form dense monolayers

Soft chemical synthesis of silicon nanosheets and their applications

Energy Technology Data Exchange (ETDEWEB)

Nakano, Hideyuki; Ikuno, Takashi [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan)

2016-12-15

Two-dimensional silicon nanomaterials are expected to show different properties from those of bulk silicon materials by virtue of surface functionalization and quantum size effects. Since facile fabrication processes of large area silicon nanosheets (SiNSs) are required for practical applications, a development of soft chemical synthesis route without using conventional vacuum processes is a challenging issue. We have recently succeeded to prepare SiNSs with sub-nanometer thicknesses by exfoliating layered silicon compounds, and they are found to be composed of crystalline single-atom-thick silicon layers. In this review, we present the synthesis and modification methods of SiNSs. These SiNSs have atomically flat and smooth surfaces due to dense coverage of organic moieties, and they are easily self-assembled in a concentrated state to form a regularly stacked structure. We have also characterized the electron transport properties and the electronic structures of SiNSs. Finally, the potential applications of these SiNSs and organic modified SiNSs are also reviewed.

Irradiation effects of swift heavy ions on gallium arsenide, silicon and silicon diodes

International Nuclear Information System (INIS)

Bhoraskar, V.N.

2001-01-01

The irradiation effects of high energy lithium, boron, oxygen and silicon ions on crystalline silicon, gallium arsenide, porous silicon and silicon diodes were investigated. The ion energy and fluence were varied over the ranges 30 to 100 MeV and 10 11 to 10 14 ions/cm 2 respectively. Semiconductor samples were characterized with the x-ray fluorescence, photoluminescence, thermally stimulated exo-electron emission and optical reflectivity techniques. The life-time of minority carriers in crystalline silicon was measured with a pulsed electron beam and the lithium depth distribution in GaAs was measured with the neutron depth profiling technique. The diodes were characterized through electrical measurements. The results of optical reflectivity, life-time of minority carriers and photoluminescence show that swift heavy ions induce defects in the surface region of crystalline silicon. In the ion-irradiated GaAs, migration of silicon, oxygen and lithium atoms from the buried region towards the surface was observed, with orders of magnitude enhancement in the diffusion coefficients. Enhancement in the photoluminescence intensity was observed in the GaAs and porous silicon samples that, were irradiated with silicon ions. The trade-off between the turn-off time and the voltage, drop in diodes irradiated with different swift heavy ions was also studied. (author)

The dose distributions of γ ray in the silicon in and near the interfaces of silicon and various materials

International Nuclear Information System (INIS)

Ba Weizhen; Wu Qingzhi; He Chengfa; Chen Chaoyang

1996-01-01

The depth dose distributions of γ ray in the silicon in and near the interfaces of silicon and various materials, such as gold, have been studied. The dose distributions have been compared with equilibrium doses in the homogeneous silicon material, and considerable dose gradient distributions were obtained. In the case of silicon adjacent to high atomic numbered material, dose enhancement effects have been observed in and near the interfaces. The dose gradient distributions were explained by photoelectron effect, Auger effect and secondary electron transport mechanism of the low energy scattering photons

Silicon nanowires: structure and properties

International Nuclear Information System (INIS)

Nezhdanov, A.V.; Mashin, A.I.; Razuvaev, A.G.; Ershov, A.V.; Ignatov, S.K.

2006-01-01

An attempt to grow silicon nanowires has been made by electron beam evaporation on highly oriented pyrolytic substrate. Needle-like objects are located along the normal to a substrate (density 2 x 10 11 cm -2 ). For modeling quasi-one-dimensional objects calculations of nuclear structure and energy spectra have been accomplished. A fullerene-like structure Si 24 is proposed as a basic atomic configuration of silicon nanowires [ru

Near-infrared free carrier absorption in heavily doped silicon

International Nuclear Information System (INIS)

Baker-Finch, Simeon C.; McIntosh, Keith R.; Yan, Di; Fong, Kean Chern; Kho, Teng C.

2014-01-01

Free carrier absorption in heavily doped silicon can have a significant impact on devices operating in the infrared. In the near infrared, the free carrier absorption process can compete with band to band absorption processes, thereby reducing the number of available photons to optoelectronic devices such as solar cells. In this work, we fabricate 18 heavily doped regions by phosphorus and boron diffusion into planar polished silicon wafers; the simple sample structure facilitates accurate and precise measurement of the free carrier absorptance. We measure and model reflectance and transmittance dispersion to arrive at a parameterisation for the free carrier absorption coefficient that applies in the wavelength range between 1000 and 1500 nm, and the range of dopant densities between ∼10 18 and 3 × 10 20  cm −3 . Our measurements indicate that previously published parameterisations underestimate the free carrier absorptance in phosphorus diffusions. On the other hand, published parameterisations are generally consistent with our measurements and model for boron diffusions. Our new model is the first to be assigned uncertainty and is well-suited to routine device analysis

Effect of water management and silicon on germination, growth, phosphorus and arsenic uptake in rice.

Science.gov (United States)

Zia, Zahida; Bakhat, Hafiz Faiq; Saqib, Zulfiqar Ahmad; Shah, Ghulam Mustafa; Fahad, Shah; Ashraf, Muhammad Rizwan; Hammad, Hafiz Mohkum; Naseem, Wajid; Shahid, Muhammad

2017-10-01

Silicon (Si) is the 2nd most abundant element in soil which is known to enhance stress tolerance in wide variety of crops. Arsenic (As), a toxic metalloid enters into the human food chain through contaminated water and food or feed. To alleviate the deleterious effect of As on human health, it is a need of time to find out an effective strategy to reduce the As accumulation in the food chain. The experiments were conducted during September-December 2014, and 2016 to optimize Si concentration for rice (Oryza sativa L.) exposed to As stress. Further experiment were carried out to evaluate the effect of optimum Si on rice seed germination, seedling growth, phosphorus and As uptake in rice plant. During laboratory experiment, rice seeds were exposed to 150 and 300µM As with and without 3mM Si supplementation. Results revealed that As application, decreased the germination up to 40-50% as compared to control treatment. Arsenic stress also significantly (P management, significantly (P˂0.05) affected the plant growth, Si and As concentrations in the plant. Arsenic uptake was relatively less under aerobic conditions. The maximum As concentration (9.34 and 27.70mgkg DW -1 in shoot and root, respectively) was found in plant treated with 300µM As in absence of Si under anaerobic condition. Similarly, anaerobic condition resulted in higher As uptake in the plants. The study demonstrated that aerobic cultivation is suitable to decrease the As uptake and in rice exogenous Si supply is beneficial to decrease As uptake under both anaerobic and aerobic conditions. Copyright © 2017 Elsevier Inc. All rights reserved.

Sustainable Phosphorus Measures: Strategies and Technologies for Achieving Phosphorus Security

Directory of Open Access Journals (Sweden)

Stuart White

2013-01-01

Full Text Available Phosphorus underpins the world’s food systems by ensuring soil fertility, maximising crop yields, supporting farmer livelihoods and ultimately food security. Yet increasing concerns around long-term availability and accessibility of the world’s main source of phosphorus—phosphate rock, means there is a need to investigate sustainable measures to buffer the world’s food systems against the long and short-term impacts of global phosphorus scarcity. While the timeline of phosphorus scarcity is contested, there is consensus that more efficient use and recycling of phosphorus is required. While the agricultural sector will be crucial in achieving this, sustainable phosphorus measures in sectors upstream and downstream of agriculture from mine to fork will also need to be addressed. This paper presents a comprehensive classification of all potential phosphorus supply- and demand-side measures to meet long-term phosphorus needs for food production. Examples range from increasing efficiency in the agricultural and mining sector, to technologies for recovering phosphorus from urine and food waste. Such measures are often undertaken in isolation from one another rather than linked in an integrated strategy. This integrated approach will enable scientists and policy-makers to take a systematic approach when identifying potential sustainable phosphorus measures. If a systematic approach is not taken, there is a risk of inappropriate investment in research and implementation of technologies and that will not ultimately ensure sufficient access to phosphorus to produce food in the future. The paper concludes by introducing a framework to assess and compare sustainable phosphorus measures and to determine the least cost options in a given context.

The role of extra-atomic relaxation in determining Si2p binding energy shifts at silicon/silicon oxide interfaces

International Nuclear Information System (INIS)

Zhang, K.Z.; Greeley, J.N.; Banaszak Holl, M.M.; McFeely, F.R.

1997-01-01

The observed binding energy shift for silicon oxide films grown on crystalline silicon varies as a function of film thickness. The physical basis of this shift has previously been ascribed to a variety of initial state effects (Si endash O ring size, strain, stoichiometry, and crystallinity), final state effects (a variety of screening mechanisms), and extrinsic effects (charging). By constructing a structurally homogeneous silicon oxide film on silicon, initial state effects have been minimized and the magnitude of final state stabilization as a function of film thickness has been directly measured. In addition, questions regarding the charging of thin silicon oxide films on silicon have been addressed. From these studies, it is concluded that initial state effects play a negligible role in the thickness-dependent binding energy shift. For the first ∼30 Angstrom of oxide film, the thickness-dependent binding energy shift can be attributed to final state effects in the form of image charge induced stabilization. Beyond about 30 Angstrom, charging of the film occurs. copyright 1997 American Institute of Physics

Theoretical studies of the lithium atom on the silicon carbide nanotubes

International Nuclear Information System (INIS)

Yu, Guolong; Chen, Na; Wang, Feifei; Xie, Yiqun; Ye, Xiang; Gu, Xiao

2014-01-01

Based on density functional theory method, we have investigated structural, electronic, and magnetic properties of lithium (Li) atom adsorbed on silicon carbide (SiC) zigzag (9,0) and armchair (5,5) nanotubes. Effective adsorptions are found on both inner- and outer-side of the SiC nanotubes, with adsorption energies ranging from 1.03 to 1.71 eV. Interestingly, we have found that SiC nanotubes exhibit different behaviors with several Li adsorption sites. Li adsorptions on the s-Si and s-H sites of the outer surface and all the five sites of the inner surface in zigzag (9,0) nanotube emerge metallic features, whereas adsorptions on other sides of (9,0) and all sites of armchair (5,5) SiC nanotubes show semiconducting characters. The calculating results also indicate that lithium adsorptions on most sites of SiC nanotubes yield spontaneous magnetization, where net magnetic moment is 1 μ B . Additionally, spin density of states, spin density distribution, and charge density difference are also calculated to investigate the electronic and magnetic properties of SiC nanotubes induced by Li adsorption

Size limit on the phosphorous doped silicon nanocrystals for dopant activation

Energy Technology Data Exchange (ETDEWEB)

Yang, P., E-mail: pengyuan.yang@surrey.ac.uk [Surrey Ion Beam Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 5XH (United Kingdom); Gwilliam, R.M. [Surrey Ion Beam Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 5XH (United Kingdom); Crowe, I.F.; Papachristodoulou, N.; Halsall, M.P. [Photon Science Institute, School of Electrical and Electronic Engineering, Alan Turing Building, University of Manchester, Manchester M13 9PL (United Kingdom); Hylton, N.P. [Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ (United Kingdom); Hulko, O.; Knights, A.P. [Department of Engineering Physics and the Centre for Emerging Device Technologies, McMaster University, 1280 Main Street West, Hamilton L8S 4L7, Ontario (Canada); Shah, M.; Kenyon, A.J. [Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE (United Kingdom)

2013-07-15

We studied the photoluminescence spectra of silicon nanocrystals doped with and without phosphorus as a function of isothermal annealing time. Silicon nanocrystals were prepared by the implantation of 80 keV Si{sup +} into a 500 nm SiO{sub 2} film to an areal density of 8 × 10{sup 16} at/cm{sup 2}. Half of the samples were co-implanted with P{sup +} at 80 keV to 5 × 10{sup 15} at/cm{sup 2}. The photoluminescence of the annealed samples were photo-excited at wavelength of 405 nm. For short anneal times, when the nanocrystal size distribution has a relatively small mean diameter, formation in the presence of phosphorus yields an increase in the luminescence intensity and a blue shift in the emission peak compared with intrinsic nanocrystals. As the mean size increases with annealing time, this enhancement rapidly diminishes and the peak energy shifts to the red. Our results indicate the donor electron generation depends strongly on the nanocrystal size. We also found a critical limit above which it allows dopant activation.

Materials research in AECL, Spring 1970

Energy Technology Data Exchange (ETDEWEB)

NONE

1970-05-15

This report gives a summary of materials research at Atomic Energy of Canada Limited. The topics covered in this report include engineering design with brittle materials, texture and mechanical properties of zirconium alloy tubing, structural damage by ion bombardment, research on silicon carbide, shallow phosphorus diffusion in p-type silicon and scanning electron microscopy. CRNL facilities for the examination of irradiated materials is also discussed.

Materials research in AECL, Spring 1970

International Nuclear Information System (INIS)

1970-05-01

This report gives a summary of materials research at Atomic Energy of Canada Limited. The topics covered in this report include engineering design with brittle materials, texture and mechanical properties of zirconium alloy tubing, structural damage by ion bombardment, research on silicon carbide, shallow phosphorus diffusion in p-type silicon and scanning electron microscopy. CRNL facilities for the examination of irradiated materials is also discussed

High polysilicon TFT field effect mobility reached thanks to slight phosphorus content in the active layer

International Nuclear Information System (INIS)

Zaghdoudi, M.; Rogel, R.; Alzaied, N.; Fathallah, M.; Mohammed-Brahim, T.

2008-01-01

The paper deals with the effect of slightly phosphorus atoms introduced during deposition of polysilicon films. Polysilicon films are used as an active layer in thin film transistors (TFTs) fabricated on glass substrates at a maximum temperature of 600 deg. C.Three phosphorus atoms contents, determined by the value of the phosphine to silane ratio: Γ (3.7 x 10 -7 , 8 x 10 -7 , 26 x 10 -6 ), are used to optimize the active layer quality. The in-situ doped layers induce a better stability of the electrical characteristics, a higher mobility and lower value of the threshold voltage for the slightly doped active layers [M. Zaghdoudi, M.M. Abdelkrim, M. Fathallah, T. Mohammed-Brahim and F. Le-Bihan Control of the weak phosphorus doping in polysilicon, Materials Science and Forum, Vols. 480-481 (2005) pp.305.]. The present work shows that the effect of slightly phosphorus content improves the quality of oxide/polysilicon interface and decreases the defects density. Degradation of electrical properties is shown to originate from the creation of defect at the channel-interface oxide and in the grain boundaries. The effect of temperature change on the electrical properties was studied and the behaviour was also analyzed

Total water, phosphorus relaxation and inter-atomic organic to inorganic interface are new determinants of trabecular bone integrity.

Directory of Open Access Journals (Sweden)

Ratan Kumar Rai

Full Text Available Bone is the living composite biomaterial having unique structural property. Presently, there is a considerable gap in our understanding of bone structure and composition in the native state, particularly with respect to the trabecular bone, which is metabolically more active than cortical bones, and is readily lost in post-menopausal osteoporosis. We used solid-state nuclear magnetic resonance (NMR to compare trabecular bone structure and composition in the native state between normal, bone loss and bone restoration conditions in rat. Trabecular osteopenia was induced by lactation as well as prolonged estrogen deficiency (bilateral ovariectomy, Ovx. Ovx rats with established osteopenia were administered with PTH (parathyroid hormone, trabecular restoration group, and restoration was allowed to become comparable to sham Ovx (control group using bone mineral density (BMD and µCT determinants. We used a technique combining (1H NMR spectroscopy with (31P and (13C to measure various NMR parameters described below. Our results revealed that trabecular bones had diminished total water content, inorganic phosphorus NMR relaxation time (T1 and space between the collagen and inorganic phosphorus in the osteopenic groups compared to control, and these changes were significantly reversed in the bone restoration group. Remarkably, bound water was decreased in both osteopenic and bone restoration groups compared to control. Total water and T1 correlated strongly with trabecular bone density, volume, thickness, connectivity, spacing and resistance to compression. Bound water did not correlate with any of the microarchitectural and compression parameters. We conclude that total water, T1 and atomic space between the crystal and organic surface are altered in the trabecular bones of osteopenic rats, and PTH reverses these parameters. Furthermore, from these data, it appears that total water and T1 could serve as trabecular surrogates of micro-architecture and

Lower reflectivity and higher minority carrier lifetime of hand-tailored porous silicon

International Nuclear Information System (INIS)

Zhang Nansheng; Ma Zhongquan; Zhou Chengyue; He Bo

2009-01-01

Solar cell grade crystalline silicon with very low reflectivity has been obtained by electrochemically selective erosion. The porous silicon (PS) structure with a mixture of nano- and micro-crystals shows good antireflection properties on the surface layer, which has potential for application in commercial silicon photovoltaic devices after optimization. The morphology and reflectivity of the PS layers are easily modulated by controlling the electrochemical formation conditions (i.e., the current density and the anodization time). It has been shown that much a lower reflectivity of approximately 1.42% in the range 380-1100 nm is realized by using optimized conditions. In addition, the minority carrier lifetime of the PS after removing the phosphorus silicon layer is measured to be ∼3.19 μs. These values are very close to the reflectivity and the minority carrier lifetime of Si 3 N 4 as a passivation layer on a bulk silicon-based solar cell (0.33% and 3.03 μs, respectively).

Electroplated contacts and porous silicon for silicon based solar cells applications

Energy Technology Data Exchange (ETDEWEB)

Kholostov, Konstantin, E-mail: kholostov@diet.uniroma1.it [Department of information engineering, electronics and telecommunications, University of Rome “La Sapienza”, Via Eudossiana 18, 00184 Rome (Italy); Serenelli, Luca; Izzi, Massimo; Tucci, Mario [Enea Casaccia Research Centre Rome, via Anguillarese 301, 00123 Rome (Italy); Balucani, Marco [Department of information engineering, electronics and telecommunications, University of Rome “La Sapienza”, Via Eudossiana 18, 00184 Rome (Italy); Rise Technology S.r.l., Lungomare Paolo Toscanelli 170, 00121 Rome (Italy)

2015-04-15

Highlights: • Uniformity of the Ni–Si interface is crucial for performance of Cu–Ni contacts on Si. • Uniformly filled PS is the key to obtain the best performance of Cu–Ni contacts on Si. • Optimization of anodization and electroplating allows complete filling of PS layer. • Highly adhesive and low contact resistance Cu–Ni contacts are obtained on Si. - Abstract: In this paper, a two-layer metallization for silicon based solar cells is presented. The metallization consists of thin nickel barrier and thick copper conductive layers, both obtained by electrodeposition technique suitable for phosphorus-doped 70–90 Ω/sq solar cell emitter formed on p-type silicon substrate. To ensure the adhesion between metal contact and emitter a very thin layer of mesoporous silicon is introduced on the emitter surface before metal deposition. This approach allows metal anchoring inside pores and improves silicon–nickel interface uniformity. Optimization of metal contact parameters is achieved varying the anodization and electrodeposition conditions. Characterization of contacts between metal and emitter is carried out by scanning electron microscopy, specific contact resistance and current–voltage measurements. Mechanical strength of nickel–copper contacts is evaluated by the peel test. Adhesion strength of more than 4.5 N/mm and contact resistance of 350 μΩ cm{sup 2} on 80 Ω/sq emitter are achieved.

Use of B{sub 2}O{sub 3} films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon

Energy Technology Data Exchange (ETDEWEB)

Kalkofen, Bodo, E-mail: bodo.kalkofen@ovgu.de; Amusan, Akinwumi A.; Bukhari, Muhammad S. K.; Burte, Edmund P. [Institute of Micro and Sensor Systems, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Garke, Bernd [Institute for Experimental Physics, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Lisker, Marco [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Gargouri, Hassan [SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany)

2015-05-15

Plasma-assisted atomic layer deposition (PALD) was carried for growing thin boron oxide films onto silicon aiming at the formation of dopant sources for shallow boron doping of silicon by rapid thermal annealing (RTA). A remote capacitively coupled plasma source powered by GaN microwave oscillators was used for generating oxygen plasma in the PALD process with tris(dimethylamido)borane as boron containing precursor. ALD type growth was obtained; growth per cycle was highest with 0.13 nm at room temperature and decreased with higher temperature. The as-deposited films were highly unstable in ambient air and could be protected by capping with in-situ PALD grown antimony oxide films. After 16 weeks of storage in air, degradation of the film stack was observed in an electron microscope. The instability of the boron oxide, caused by moisture uptake, suggests the application of this film for testing moisture barrier properties of capping materials particularly for those grown by ALD. Boron doping of silicon was demonstrated using the uncapped PALD B{sub 2}O{sub 3} films for RTA processes without exposing them to air. The boron concentration in the silicon could be varied depending on the source layer thickness for very thin films, which favors the application of ALD for semiconductor doping processes.

Atomic molecular and optical physics

International Nuclear Information System (INIS)

Anon.

1986-01-01

Laser-assisted manufacturing and fiber-optics communications are but two of the products of atomic, molecular, and optical physics, (AMO) research. AMO physics provides theoretical and experimental methods and essential data to neighboring areas of science such as chemistry, astrophysics, condensed-matter physics, plasma physics, surface science, biology, and medicine. This book addresses advances in atomic, molecular, and optical fields and provides recommendations for further research. It also looks at scientific applications in national security, manufacturing, medicine, and other fields

Iron and its complexes in silicon

Science.gov (United States)

Istratov, A. A.; Hieslmair, H.; Weber, E. R.

This article is the first in a series of two reviews on the properties of iron in silicon. It offers a comprehensive of the current state of understanding of fundamental physical properties of iron and its complexes in silicon. The first section of this review discusses the position of iron in the silicon lattice and the electrical properties of interstitial iron. Updated expressions for the solubility and the diffusivity of iron in silicon are presented, and possible explanations for conflicting experimental data obtained by different groups are discussed. The second section of the article considers the electrical and the structural properties of complexes of interstitial iron with shallow acceptors (boron, aluminum, indium, gallium, and thallium), shallow donors (phosphorus and arsenic) and other impurities (gold, silver, platinum, palladium, zinc, sulfur, oxygen, carbon, and hydrogen). Special attention is paid to the kinetics of iron pairing with shallow acceptors, the dissociation of these pairs, and the metastability of iron-acceptor pairs. The parameters of iron-related defects in silicon are summarized in tables that include more than 30 complexes of iron as detected by electron paramagnetic resonance (EPR) and almost 20 energy levels in the band gap associated with iron. The data presented in this review illustrate the enormous complexing activity of iron, which is attributed to the partial or complete (depending on the temperature and the conductivity type) ionization of iron as well as the high diffusivity of iron in silicon. It is shown that studies of iron in silicon require exceptional cleanliness of experimental facilities and highly reproducible diffusion and temperature ramping (quenching) procedures. Properties of iron that are not yet completely understood and need further research are outlined.

The influence of diffusion of fluorine compounds for silicon lateral etching

Energy Technology Data Exchange (ETDEWEB)

Verdonck, Patrick; Goodyear, Alec; Braithwaite, Nicholas St.John

2004-07-01

In an earlier study, it was proposed that long-range surface transport of fluorine atoms could precede the eventual binding to a silicon atom. The rate of binding increases if the silicon is bombarded with high energy ions. In this study, the lateral etching of a silicon layer, sandwiched between two silicon dioxide layers, was studied in order to investigate and extend these hypotheses. The under etching of the silicon layer was higher for wafers which suffered ion bombardment, showing that this mechanism is important even for horizontal etching. At the same time, the thickness of the silicon layer was varied. In all cases, the thinner silicon layer etched much faster then the thicker layer, indicating that fluorine surface transport is much more important than re-emission for these processes. The etch rate increase with ion bombardment can be explained by the fact that part of the energy of the incoming ions is transferred to the fluorine compounds which are on the horizontal surfaces and that ion bombardment enhances the fluorine surface transport.

Relevance of phosphorus incorporation and hydrogen removal for Si:P {delta}-doped layers fabricated using phosphine

Energy Technology Data Exchange (ETDEWEB)

Goh, K.E.J.; Oberbeck, L.; Simmons, M.Y. [Centre for Quantum Computer Technology, School of Physics, The University of New South Wales, Sydney, New South Wales 2052 (Australia)

2005-05-01

We present a study to determine the importance of phosphorus incorporation and hydrogen removal for the electrical activation of phosphorus dopants in Si:P {delta}-doped samples fabricated using phosphine dosing and molecular beam epitaxy (MBE). The carrier densities in these samples were determined from Hall effect measurements at 4 K sample temperature. An anneal to incorporate phosphorus atoms into substitutional lattice sites is critical to achieving full dopant activation after Si encapsulation by MBE. Whilst the presence of hydrogen can degrade the quality of the Si encapsulation layer, we show that it does not adversely impact the electrical activation of the phosphorus dopants. We discuss the relevance of our results to the fabrication of nano-scale Si:P devices. (copyright 2005 WILEY-VCH Verlag GmbH and C o. KGaA, Weinheim) (orig.)

Effect of phosphorus and heat treatment on microstructure of Al-25%Si alloy

Directory of Open Access Journals (Sweden)

Bo Dang

2017-01-01

Full Text Available It is known that phosphorus can refine the primary silicon and heat treatment can spheroidize the eutectic silicon. This paper presents an optimal combination of heat treatment processes and P refinement on hypereutectic Al-Si alloy. The optimal P addition amount, and the solution and aging temperatures for Al-25%Si alloy were obtained through the orthogonal experiment, and their modification effects were discussed. The results show that P addition has the greatest modification effect, followed by aging temperature, and the modification effect of solution temperature is the least. The optimized modification parameters are: addition of 0.6% P, solution at 540 篊 and aging at 160 篊 . In addition, the cooling curve, superheating and hardness of the alloy were also analyzed.

Low-temperature atomic layer deposition of MoO{sub x} for silicon heterojunction solar cells

Energy Technology Data Exchange (ETDEWEB)

Macco, B.; Vos, M.F.J.; Thissen, N.F.W.; Bol, A.A. [Department of Applied Physics, Eindhoven University of Technology, Eindhoven (Netherlands); Kessels, W.M.M. [Department of Applied Physics, Eindhoven University of Technology, Eindhoven (Netherlands); Solliance Solar Research, Eindhoven (Netherlands)

2015-07-15

The preparation of high-quality molybdenum oxide (MoO{sub x}) is demonstrated by plasma-enhanced atomic layer deposition (ALD) at substrate temperatures down to 50 C. The films are amorphous, slightly substoichiometric with respect to MoO{sub 3}, and free of other elements apart from hydrogen (<11 at%). The films have a high transparency in the visible region and their compatibility with a-Si:H passivation schemes is demonstrated. It is discussed that these aspects, in conjunction with the low processing temperature and the ability to deposit very thin conformal films, make this ALD process promising for the future application of MoO{sub x} in hole-selective contacts for silicon heterojunction solar cells. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Oxide film assisted dopant diffusion in silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Tin, Chin-Che, E-mail: cctin@physics.auburn.ed [Department of Physics, Auburn University, Alabama 36849 (United States); Mendis, Suwan [Department of Physics, Auburn University, Alabama 36849 (United States); Chew, Kerlit [Department of Electrical and Electronic Engineering, Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Kuala Lumpur (Malaysia); Atabaev, Ilkham; Saliev, Tojiddin; Bakhranov, Erkin [Physical Technical Institute, Uzbek Academy of Sciences, 700084 Tashkent (Uzbekistan); Atabaev, Bakhtiyar [Institute of Electronics, Uzbek Academy of Sciences, 700125 Tashkent (Uzbekistan); Adedeji, Victor [Department of Chemistry, Geology and Physics, Elizabeth City State University, North Carolina 27909 (United States); Rusli [School of Electrical and Electronic Engineering, Nanyang Technological University (Singapore)

2010-10-01

A process is described to enhance the diffusion rate of impurities in silicon carbide so that doping by thermal diffusion can be done at lower temperatures. This process involves depositing a thin film consisting of an oxide of the impurity followed by annealing in an oxidizing ambient. The process uses the lower formation energy of silicon dioxide relative to that of the impurity-oxide to create vacancies in silicon carbide and to promote dissociation of the impurity-oxide. The impurity atoms then diffuse from the thin film into the near-surface region of silicon carbide.

Oxide film assisted dopant diffusion in silicon carbide

International Nuclear Information System (INIS)

Tin, Chin-Che; Mendis, Suwan; Chew, Kerlit; Atabaev, Ilkham; Saliev, Tojiddin; Bakhranov, Erkin; Atabaev, Bakhtiyar; Adedeji, Victor; Rusli

2010-01-01

A process is described to enhance the diffusion rate of impurities in silicon carbide so that doping by thermal diffusion can be done at lower temperatures. This process involves depositing a thin film consisting of an oxide of the impurity followed by annealing in an oxidizing ambient. The process uses the lower formation energy of silicon dioxide relative to that of the impurity-oxide to create vacancies in silicon carbide and to promote dissociation of the impurity-oxide. The impurity atoms then diffuse from the thin film into the near-surface region of silicon carbide.

Grooving of grain boundaries in multicrystalline silicon: Effect on solar cell performance

International Nuclear Information System (INIS)

Dimassi, W.; Bouaicha, M.; Nouri, H.; Boujmil, M.F.; Ben Nasrallah, S.; Bessais, B.

2006-01-01

In this work, we investigate the effect of grooving of grain boundaries (GB) in multicrystalline silicon using chemical etching in HF/HNO 3 solutions. The grain boundaries were grooved in order to reduce the area of these highly recombining regions. Using optimized conditions, grooved GBs enable deep phosphorus diffusion and deep metallic contacts. As a result, the internal quantum efficiency (IQE), and the I-V characteristics under the dark and AM1.5 illumination were improved. It was also observed a reduction of the GB recombination velocity, which was deduced from light-beam-induced-current (LBIC) measurements. Such grooving in multicrystalline silicon enables passivation of GB-related defects. These results are discussed and compared to solar cells based on untreated multicrystalline silicon wafers

The effects of trichloroethane HCl and ion-implantation on the oxidation rate of silicon

International Nuclear Information System (INIS)

Ahmed, W.; Ahmed, E.

1994-01-01

The thermal oxidation of silicon was studied using a large-scale industrial oxidation system. The characteristics of the oxides resulting from pure hydrogen/oxygen (Hsub(2)/Osub(2)), trichloroethane/oxygen (TCA/Osub(2) and hydrogen chloride/oxygen (HCI/Osub(2)) mixtures are compared. Both HCI and TCA addition to oxygen produced an enhanced oxidation rate. The oxidation rate for TCA/Osub(2) was approximately 30-40% higher than for HCI/Osub(2) mixtures. A molar ratio of TCA/Osub(2) of 1% gives an optimum process for very-large-scale industrial (VLSI) applications. However, 3% HCI/Osub(2) gives comparable results to 1% TCA. In addition, boron and phosphorus implantation are observed to increase the oxidation rate. Phosphorus doping of the silicon yields a higher rate than boron-doped wafers. This behaviour is explained in terms of surface damage and chemistry. It appears that the overall mechanisms governing all these processes are similar. (8 figures, 22 references) (Author)

Magnetic engineering in InSe/black-phosphorus heterostructure by transition-metal-atom Sc-Zn doping in the van der Waals gap

Science.gov (United States)

Ding, Yi-min; Shi, Jun-jie; Zhang, Min; Zhu, Yao-hui; Wu, Meng; Wang, Hui; Cen, Yu-lang; Guo, Wen-hui; Pan, Shu-hang

2018-07-01

Within the framework of the spin-polarized density-functional theory, we have studied the electronic and magnetic properties of InSe/black-phosphorus (BP) heterostructure doped with 3d transition-metal (TM) atoms from Sc to Zn. The calculated binding energies show that TM-atom doping in the van der Waals (vdW) gap of InSe/BP heterostructure is energetically favorable. Our results indicate that magnetic moments are induced in the Sc-, Ti-, V-, Cr-, Mn- and Co-doped InSe/BP heterostructures due to the existence of non-bonding 3d electrons. The Ni-, Cu- and Zn-doped InSe/BP heterostructures still show nonmagnetic semiconductor characteristics. Furthermore, in the Fe-doped InSe/BP heterostructure, the half-metal property is found and a high spin polarization of 100% at the Fermi level is achieved. The Cr-doped InSe/BP has the largest magnetic moment of 4.9 μB. The Sc-, Ti-, V-, Cr- and Mn-doped InSe/BP heterostructures exhibit antiferromagnetic ground state. Moreover, the Fe- and Co-doped systems display a weak ferromagnetic and paramagnetic coupling, respectively. Our studies demonstrate that the TM doping in the vdW gap of InSe/BP heterostructure is an effective way to modify its electronic and magnetic properties.

Characterization, non-isothermal decomposition kinetics and photocatalytic water splitting of green chemically synthesized polyoxoanions of molybdenum containing phosphorus as hetero atom

International Nuclear Information System (INIS)

D’Cruz, Bessy; Samuel, Jadu; George, Leena

2014-01-01

Highlights: • CPM nanorods were synthesized by applying the principles of green chemistry. • The isoconversional method was used to analyze the effective activation energy. • The appropriate reaction models of the two decomposition stages were determined. • Photocatalytic water splitting was investigated in the presence of platinum co-catalyst. - Abstract: In here, the green synthesis and thermal characterization of a novel polyoxoanions of molybdenum containing phosphorus as hetero atom are reported. The composition and morphology of the nanorods were established by fourier transform infrared spectroscopy (FT-IR), scanning electron microscopy (SEM), transmission electron microscopy (TEM), thermogravimetric analysis (TGA) and inductively coupled plasma atomic emission spectroscopic (ICP-AES) techniques. Thermal properties of the nanoparticles were investigated by non-isothermal analysis under nitrogen atmosphere. The values activation energy of each stage of thermal decomposition for all heating rates was calculated by Flynn–Wall–Ozawa (FWO) and Kissinger–Akahira–Sunnose (KAS) methods. Invariant kinetic parameter (IKP) method and master plot method were also used to evaluate the kinetic parameters and mechanism for the thermal decomposition of cetylpyridinium phosphomolybdate (CPM). Photocatalytic water oxidation mechanism using CPM catalyst in the presence of platinum (Pt) co-catalyst enhances the H 2 evolution and was found to be 1.514 mmol/g/h

Characterization, non-isothermal decomposition kinetics and photocatalytic water splitting of green chemically synthesized polyoxoanions of molybdenum containing phosphorus as hetero atom

Energy Technology Data Exchange (ETDEWEB)

D’Cruz, Bessy [Department of Chemistry, Mar Ivanios College, Thiruvananthapuram 695015 (India); Samuel, Jadu, E-mail: jadu_samuel@yahoo.co.in [Department of Chemistry, Mar Ivanios College, Thiruvananthapuram 695015 (India); George, Leena [Catalysis and Inorganic Chemistry Division, National Chemical Laboratory, Pune 411008 (India)

2014-11-20

Highlights: • CPM nanorods were synthesized by applying the principles of green chemistry. • The isoconversional method was used to analyze the effective activation energy. • The appropriate reaction models of the two decomposition stages were determined. • Photocatalytic water splitting was investigated in the presence of platinum co-catalyst. - Abstract: In here, the green synthesis and thermal characterization of a novel polyoxoanions of molybdenum containing phosphorus as hetero atom are reported. The composition and morphology of the nanorods were established by fourier transform infrared spectroscopy (FT-IR), scanning electron microscopy (SEM), transmission electron microscopy (TEM), thermogravimetric analysis (TGA) and inductively coupled plasma atomic emission spectroscopic (ICP-AES) techniques. Thermal properties of the nanoparticles were investigated by non-isothermal analysis under nitrogen atmosphere. The values activation energy of each stage of thermal decomposition for all heating rates was calculated by Flynn–Wall–Ozawa (FWO) and Kissinger–Akahira–Sunnose (KAS) methods. Invariant kinetic parameter (IKP) method and master plot method were also used to evaluate the kinetic parameters and mechanism for the thermal decomposition of cetylpyridinium phosphomolybdate (CPM). Photocatalytic water oxidation mechanism using CPM catalyst in the presence of platinum (Pt) co-catalyst enhances the H{sub 2} evolution and was found to be 1.514 mmol/g/h.

Tungsten silicide contacts to polycrystalline silicon and silicon-germanium alloys

International Nuclear Information System (INIS)

Srinivasan, G.; Bain, M.F.; Bhattacharyya, S.; Baine, P.; Armstrong, B.M.; Gamble, H.S.; McNeill, D.W.

2004-01-01

Silicon-germanium alloy layers will be employed in the source-drain engineering of future MOS transistors. The use of this technology offers advantages in reducing series resistance and decreasing junction depth resulting in reduction in punch-through and SCE problems. The contact resistance of metal or metal silicides to the raised source-drain material is a serious issue at sub-micron dimensions and must be minimised. In this work, tungsten silicide produced by chemical vapour deposition has been investigated as a contact metallization scheme to both boron and phosphorus doped polycrystalline Si 1- x Ge x , with 0 ≤x ≤ 0.3. Cross bridge Kelvin resistor (CKBR) structures were fabricated incorporating CVD WSi 2 and polycrystalline SiGe. Tungsten silicide contacts to control polysilicon CKBR structures have been shown to be of high quality with specific contact resistance ρ c values 3 x 10 -7 ohm cm 2 and 6 x 10 -7 ohm cm 2 obtained to boron and phosphorus implanted samples respectively. The SiGe CKBR structures show that the inclusion of Ge yields a reduction in ρ c for both dopant types. The boron doped SiGe exhibits a reduction in ρ c from 3 x 10 -7 to 5 x 10 -8 ohm cm 2 as Ge fraction is increased from 0 to 0.3. The reduction in ρ c has been shown to be due to (i) the lowering of the tungsten silicide Schottky barrier height to p-type SiGe resulting from the energy band gap reduction, and (ii) increased activation of the implanted boron with increased Ge fraction. The phosphorus implanted samples show less sensitivity of ρ c to Ge fraction with a lowest value in this work of 3 x 10 -7 ohm cm 2 for a Ge fraction of 0.3. The reduction in specific contact resistance to the phosphorus implanted samples has been shown to be due to increased dopant activation alone

Three-Dimensional Atomic Structure of Metastable Nanoclusters in Doped Semiconductors

Science.gov (United States)

Couillard, Martin; Radtke, Guillaume; Knights, Andrew P.; Botton, Gianluigi A.

2011-10-01

Aberration-corrected scanning transmission electron microscopy is used to determine the atomic structure of nanoclusters of cerium dopant atoms embedded in silicon. By channeling electrons along two crystallographic orientations, we identify a characteristic zinc-blende chemical ordering within CeSi clusters coherent with the silicon host matrix. Strain energy limits the size of these ordered arrangements to just above 1 nm. With the local order identified, we then determine the atomic configuration of an individual subnanometer cluster by quantifying the scattering intensity under weak channeling condition in terms of the number of atoms. Analysis based on single-atom visualization also evidences the presence of split-vacancy impurity complexes, which supports the hypothesis of a vacancy-assisted formation of these metastable CeSi nanophases.

Shortened screening method for phosphorus fractionation in sediments A complementary approach to the standards, measurements and testing harmonised protocol

International Nuclear Information System (INIS)

Pardo, Patricia; Rauret, Gemma; Lopez-Sanchez, Jose Fermin

2004-01-01

The SMT protocol, a sediment phosphorus fractionation method harmonised and validated in the frame of the standards, measurements and testing (SMT) programme (European Commission), establishes five fractions of phosphorus according to their extractability. The determination of phosphate extracted is carried out spectrophotometrically. This protocol has been applied to 11 sediments of different origin and characteristics and the phosphorus extracted in each fraction was determined not only by UV-Vis spectrophotometry, but also by inductively coupled plasma-atomic emission spectrometry. The use of these two determination techniques allowed the differentiation between phosphorus that was present in the extracts as soluble reactive phosphorus and as total phosphorus. From the comparison of data obtained with both determination techniques a shortened screening method, for a quick evaluation of the magnitude and importance of the fractions given by the SMT protocol, is proposed and validated using two certified reference materials

Calcium and phosphorus determination in bones of low value fishes, Sardinella longiceps (Valenciennes and Trichiurus savala (Cuvier, from Parangipettai, Southeast Coast of India

Directory of Open Access Journals (Sweden)

Logesh AR

2012-05-01

Full Text Available Objective: To investigate calcium and phosphorus levels in the bones of low value fishes Sardinella longiceps (oil sardine and Trichiurus savala (ribbon fish. Methods: Bones and skeletal remains were subjected to alkaline-alcohol treatment for specified period of time and were then dried and pulverized. Calcium and phosphorus levels were determined by both volumetric and instrumental methods using atomic absorption spectroscopy. Results: Volumetric analysis of calcium and phosphorus were 28.98% and 14.2% in oil sardine; 24.2% and 11.6% in ribbon fish respectively. Atomic absorption spectroscopy analysis of calcium and phosphorus were 32.73% and 17.2% for oil sardine and 27.17% and 10.83% for ribbon fish respectively. Protein level was 4.82% in oil sardine and 3.97% in ribbon fishes. Conclusions: The findings of the present study revealed that sardine bones are rich in calcium and will be utilized for the production of calcium powder to treat osteoporosis.

Slater-Koster Tight-Binding parametrization of single and few-layer Black-Phosphorus from first-principles calculations

Science.gov (United States)

Menezes, Marcos; Capaz, Rodrigo

Black Phosphorus (BP) is a promising material for applications in electronics, especially due to the tuning of its band gap by increasing the number of layers. In single-layer BP, also called Phosphorene, the P atoms form two staggered chains bonded by sp3 hybridization, while neighboring layers are bonded by Van-der-Waals interactions. In this work, we present a Tight-Binding (TB) parametrization of the electronic structure of single and few-layer BP, based on the Slater-Koster model within the two-center approximation. Our model includes all 3s and 3p orbitals, which makes this problem more complex than that of graphene, where only 2pz orbitals are needed for most purposes. The TB parameters are obtained from a least-squares fit of DFT calculations carried on the SIESTA code. We compare the results for different basis-sets used to expand the ab-initio wavefunctions and discuss their applicability. Our model can fit a larger number of bands than previously reported calculations based on Wannier functions. Moreover, our parameters have a clear physical interpretation based on chemical bonding. As such, we expect our results to be useful in a further understanding of multilayer BP and other 2D-materials characterized by strong sp3 hybridization. CNPq, FAPERJ, INCT-Nanomateriais de Carbono.

Electrical and electron microscopy observations on defects in ion implanted silicon

International Nuclear Information System (INIS)

Ling, H.

1978-01-01

Silicon single crystals were implanted with 100 keV phosphorus ions to a dose of 2 x 10 16 ions/cm 2 at both room-temperature and 600 0 C. They were isochronally annealed at temperatures ranging from 400 0 C to 900 0 C. Sheet resistivity measurements of the specimens were taken after each anneal, together with corresponding transmission electron micrographs

Precipitated iron. A limit on gettering efficacy in multicrystalline silicon

Energy Technology Data Exchange (ETDEWEB)

Fenning, D.P.; Hofstetter, J.; Bertoni, M.I.; Buonassisi, T. [Massachusetts Institute of Technology MIT, Cambridge, Massachusetts 02139 (United States); Coletti, G. [ECN Solar Energy, Westerduinweg 3, NL-1755 LE Petten (Netherlands); Lai, B. [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Del Canizo, C. [Instituto de Energia Solar, Universidad Politecnica de Madrid, 28040 Madrid (Spain)

2013-01-31

A phosphorus diffusion gettering model is used to examine the efficacy of a standard gettering process on interstitial and precipitated iron in multicrystalline silicon. The model predicts a large concentration of precipitated iron remaining after standard gettering for most as-grown iron distributions. Although changes in the precipitated iron distribution are predicted to be small, the simulated post-processing interstitial iron concentration is predicted to depend strongly on the as-grown distribution of precipitates, indicating that precipitates must be considered as internal sources of contamination during processing. To inform and validate the model, the iron distributions before and after a standard phosphorus diffusion step are studied in samples from the bottom, middle, and top of an intentionally Fe-contaminated laboratory ingot. A census of iron-silicide precipitates taken by synchrotron-based X-ray fluorescence microscopy confirms the presence of a high density of iron-silicide precipitates both before and after phosphorus diffusion. A comparable precipitated iron distribution was measured in a sister wafer after hydrogenation during a firing step. The similar distributions of precipitated iron seen after each step in the solar cell process confirm that the effect of standard gettering on precipitated iron is strongly limited as predicted by simulation. Good agreement between the experimental and simulated data supports the hypothesis that gettering kinetics is governed by not only the total iron concentration but also by the distribution of precipitated iron. Finally, future directions based on the modeling are suggested for the improvement of effective minority carrier lifetime in multicrystalline silicon solar cells.

Hydrogen molecules and hydrogen-related defects in crystalline silicon

Science.gov (United States)

Fukata, N.; Sasaki, S.; Murakami, K.; Ishioka, K.; Nakamura, K. G.; Kitajima, M.; Fujimura, S.; Kikuchi, J.; Haneda, H.

1997-09-01

We have found that hydrogen exists in molecular form in crystalline silicon treated with hydrogen atoms in the downstream of a hydrogen plasma. The vibrational Raman line of hydrogen molecules is observed at 4158 cm-1 for silicon samples hydrogenated between 180 and 500 °C. The assignment of the Raman line is confirmed by its isotope shift to 2990 cm-1 for silicon treated with deuterium atoms. The Raman intensity has a maximum for hydrogenation at 400 °C. The vibrational Raman line of the hydrogen molecules is broad and asymmetric. It consists of at least two components, possibly arising from hydrogen molecules in different occupation sites in crystalline silicon. The rotational Raman line of hydrogen molecules is observed at 590 cm-1. The Raman band of Si-H stretching is observed for hydrogenation temperatures between 100 and 500 °C and the intensity has a maximum for hydrogenation at 250 °C.

Structures of Pt clusters on graphene doped with nitrogen, boron, and silicon: a theoretical study

Institute of Scientific and Technical Information of China (English)

Dai Xian-Qi; Tang Ya-Nan; Dai Ya-Wei; Li Yan-Hui; Zhao Jian-Hua; Zhao Bao; Yang Zong-Xian

2011-01-01

The structures of Pt clusters on nitrogen-, boron-, silicon- doped graphenes are theoretically studied using densityfunctional theory. These dopants (nitrogen, boron and silicon) each do not induce a local curvature in the graphene and the doped graphenes all retain their planar form. The formation energy of the silicon-graphene system is lower than those of the nitrogen-, boron-doped graphenes, indicating that the silicon atom is easier to incorporate into the graphene.All the substitutional impurities enhance the interaction between the Pt atom and the graphene. The adsorption energy of a Pt adsorbed on the silicon-doped graphene is much higher than those on the nitrogen- and boron-doped graphenes.The doped silicon atom can provide more charges to enhance the Pt-graphene interaction and the formation of Pt clusters each with a large size. The stable structures of Pt clusters on the doped-graphenes are dimeric, triangle and tetrahedron with the increase of the Pt coverage. Of all the studied structures, the tetrahedron is the most stable cluster which has the least influence on the planar surface of doped-graphene.

Temperature detectors on irradiated silicon base

International Nuclear Information System (INIS)

Karimov, M.; Dzhalelov, M.A.; Kurbanov, A.O.

2005-01-01

It is well known, that the most suitable for thermal resistors production is compensated silicon with impurities forming deep lying in forbidden zone, having big negative resistance temperature coefficients (RTC). In the capacity of initial materials for thermal resistors with negative RTC the n-type monocrystalline silicon with specific resistance ∼30 Ω·cm at 300 K is applied. Before the irradiation the phosphorus diffusion is realizing at temperature ∼1000 deg. C for 10 min. Irradiation is putting into practise by WWR-SM reactor fast neutrons within the range (7-10)·10 13 cm -2 . The produced resistors have nominal resistance range (8-20)·10 3 Ω·cm, coefficient of the thermal sensitivity B=4000-6000 deg. C., RTC α 300K =4-6.6 %/grad. It is shown, that offered method allows to obtain same type resistors characteristics on the base of neutron-irradiated material

Study of the Adsorption of Atoms and Molecules on Silicon Surfaces: Crystallographics and Electronic Structure

International Nuclear Information System (INIS)

Bengio, Silvina

2003-01-01

This thesis work has been concerned with adsorption properties of silicon surfaces.The atomic and electronic structure of molecules and atoms adsorbed on Si has been investigated by means of photoemission experiments combined with synchrotron radiation.The quantitative atomic structure determination was held applying the photoelectron diffraction technique.This technique is sensible to the local structure of a reference atomic specie and has elemental and chemical-state specificity.This approach has been applied to three quite different systems with different degrees of complexity, Sb/Si(111) √3x √3R30 0 , H 2 O/Si(100)2x1 and NH 3 /Si(111)7x7.Our results show that Sb which forms a ( √3√3)R30 0 phase produces a bulklike-terminated Si(111)1x1 substrate free of stacking faults.Regarding the atomic structure of its interface, this study strongly favours the T4-site milkstool model over the H3 one.An important aspect regarding the H 2 O/Si(100)(2x1) system was establishing the limits of precision with which one can determine not only the location of the adsorbed hydroxyl (OH) species, but also the extent to which this adsorption modifes the asymmetric dimers of the clean surface to which it is bonded.On the Si(111)(7x7) surface the problem is particularly complex because there are several different potentially active sites for NH3 adsorption and fragmentation.The application of the PhD method, however, has shown that the majority of the N atoms are on so-called 'rest atom' sites when deposited at RT.This is consistent with the N in the NH2 chemical state.This investigation represents the first quantitative structural study of any molecular adsorbate on the complex Si(111)(7x7) surface.This atomic structures determination shows the PhD is a powerful tool for the atomic structure determination.The molecular systems interacting with the active sites of the substrate fragments producing a short-range order surface.This long-range disorder is produced by the

Measurements and characterization of a hole trap in neutron-irradiated silicon

International Nuclear Information System (INIS)

Avset, B.S.

1996-04-01

The report describes measurements on a hole trap in neutron irradiated silicon diodes made one high resistivity phosphorus doped floatzone silicon. The hole trap was detected by Deep Level Transient Spectroscopy. This measurement gave a trap activation energy of 0.475 MeV. Other measurements showed that the trap has very small capture cross sections for both holes and electrons (10 -18 to 10 -20 cm 2 ) and that the hole capture cross section is temperature dependent. The energy level position of the trap has been estimated to be between 0.25 and 0.29 eV from the valence band. 25 refs., 21 figs., 4 tabs

A microscope for mapping-out in the atomic region

International Nuclear Information System (INIS)

1985-01-01

The lastest development of the tunnel microscope is described, which enables the structure of individual atoms on various surfaces (gold, silicon, graphite) to be made visible in the sense of a topological profile of the surface. The technical features and operation of the microscope are described in detail. The use of 3 piezo-electric elements for vertical and horizontal positioning of the sensor tip gives an accuracy sufficient to exhibit the electron cloud forming the outer boundary of each atom. Images of gold, silicon, oxygen and carbon atoms have been produced and show structures previously unknown. Revolutionary spin-offs can be expected in various disciplines. (L.M.W.)

Interplay between Switching Driven by the Tunneling Current and Atomic Force of a Bistable Four-Atom Si Quantum Dot.

Science.gov (United States)

Yamazaki, Shiro; Maeda, Keisuke; Sugimoto, Yoshiaki; Abe, Masayuki; Zobač, Vladimír; Pou, Pablo; Rodrigo, Lucia; Mutombo, Pingo; Pérez, Ruben; Jelínek, Pavel; Morita, Seizo

2015-07-08

We assemble bistable silicon quantum dots consisting of four buckled atoms (Si4-QD) using atom manipulation. We demonstrate two competing atom switching mechanisms, downward switching induced by tunneling current of scanning tunneling microscopy (STM) and opposite upward switching induced by atomic force of atomic force microscopy (AFM). Simultaneous application of competing current and force allows us to tune switching direction continuously. Assembly of the few-atom Si-QDs and controlling their states using versatile combined AFM/STM will contribute to further miniaturization of nanodevices.

Thermal equilibrium concentration of intrinsic point defects in heavily doped silicon crystals - Theoretical study of formation energy and formation entropy in area of influence of dopant atoms-

Science.gov (United States)

Kobayashi, K.; Yamaoka, S.; Sueoka, K.; Vanhellemont, J.

2017-09-01

It is well known that p-type, neutral and n-type dopants affect the intrinsic point defect (vacancy V and self-interstitial I) behavior in single crystal Si. By the interaction with V and/or I, (1) growing Si crystals become more V- or I-rich, (2) oxygen precipitation is enhanced or retarded, and (3) dopant diffusion is enhanced or retarded, depending on the type and concentration of dopant atoms. Since these interactions affect a wide range of Si properties ranging from as-grown crystal quality to LSI performance, numerical simulations are used to predict and to control the behavior of both dopant atoms and intrinsic point defects. In most cases, the thermal equilibrium concentrations of dopant-point defect pairs are evaluated using the mass action law by taking only the binding energy of closest pair to each other into account. The impacts of dopant atoms on the formation of V and I more distant than 1st neighbor and on the change of formation entropy are usually neglected. In this study, we have evaluated the thermal equilibrium concentrations of intrinsic point defects in heavily doped Si crystals. Density functional theory (DFT) calculations were performed to obtain the formation energy (Ef) of the uncharged V and I at all sites in a 64-atom supercell around a substitutional p-type (B, Ga, In, and Tl), neutral (C, Ge, and Sn) and n-type (P, As, and Sb) dopant atom. The formation (vibration) entropies (Sf) of free I, V and I, V at 1st neighboring site from B, C, Sn, P and As atoms were also calculated with the linear response method. The dependences of the thermal equilibrium concentrations of trapped and total intrinsic point defects (sum of free I or V and I or V trapped with dopant atoms) on the concentrations of B, C, Sn, P and As in Si were obtained. Furthermore, the present evaluations well explain the experimental results of the so-called ;Voronkov criterion; in B and C doped Si, and also the observed dopant dependent void sizes in P and As doped Si

Phosphorus diffusion in float zone silicon crystal growth

DEFF Research Database (Denmark)

Larsen, Theis Leth

2000-01-01

This Ph.D thesis encompasses a global numerical simulation of the needle-eye oat zone process, used to grow silicon single crystals. The numerical models includes coupled electromagnetic and free surface models and a global heat transfer model, with moving boundaries. An axisymmetric uidow model......, including centrifugal, buoyancy, thermocapillary and electromagnetic forces, is used to determine flow field, after the phase boundaries have been determined, by the heat transfer model. A finite element model for calculating dopant transport, using the calculated unsteady flow field, has been developed...... within this project. This model has furthermore been expanded to two equations coupled by a non-zero right hand side, for simulating transport of point defects in the crystal during growth. Free surface shapes and induced electric surface current are calculated for t wo different 4'' congurations and a 0...

Reaction studies of hot silicon and germanium radicals. Progress report, September 1, 1978-August 31, 1979

International Nuclear Information System (INIS)

Gaspar, P.P.

1979-01-01

The experimental approach to attaining the goals of this research program is briefly outlined and the progress made in the last year is reviewed in sections entitled: (a) Primary steps in the reaction of recoiling silicon and germanium atoms and the identification of reactive intermediates; (b) Thermally induced silylene and germylene reactions; (c) Silicon free radical chemistry; (d) The role of ionic reactions in the chemistry of recoiling silicon atoms

Hexacoordinate bonding and aromaticity in silicon phthalocyanine.

Science.gov (United States)

Yang, Yang

2010-12-23

Si-E bondings in hexacoordinate silicon phthalocyanine were analyzed using bond order (BO), energy partition, atoms in molecules (AIM), electron localization function (ELF), and localized orbital locator (LOL). Bond models were proposed to explain differences between hexacoordinate and tetracoordinate Si-E bondings. Aromaticity of silicon phthalocyanine was investigated using nucleus-independent chemical shift (NICS), harmonic oscillator model of aromaticity (HOMA), conceptual density functional theory (DFT), ring critical point (RCP) descriptors, and delocalization index (DI). Structure, energy, bonding, and aromaticity of tetracoordinate silicon phthalocyanine were studied and compared with hexacoordinate one.

Recrafting the neighbor-joining method

Directory of Open Access Journals (Sweden)

Pedersen Christian NS

2006-01-01

Full Text Available Abstract Background The neighbor-joining method by Saitou and Nei is a widely used method for constructing phylogenetic trees. The formulation of the method gives rise to a canonical Θ(n3 algorithm upon which all existing implementations are based. Results In this paper we present techniques for speeding up the canonical neighbor-joining method. Our algorithms construct the same phylogenetic trees as the canonical neighbor-joining method. The best-case running time of our algorithms are O(n2 but the worst-case remains O(n3. We empirically evaluate the performance of our algoritms on distance matrices obtained from the Pfam collection of alignments. The experiments indicate that the running time of our algorithms evolve as Θ(n2 on the examined instance collection. We also compare the running time with that of the QuickTree tool, a widely used efficient implementation of the canonical neighbor-joining method. Conclusion The experiments show that our algorithms also yield a significant speed-up, already for medium sized instances.

A novel method to achieve selective emitter for silicon solar cell using low cost pattern-able a-Si thin films as the semi-transparent phosphorus diffusion barrier

International Nuclear Information System (INIS)

Chen, Da Ming; Liang, Zong Cun; Zhuang, Lin; Lin, Yang Huan; Shen, Hui

2012-01-01

Highlights: ► a-Si thin films as semitransparent phosphorus diffusion barriers for solar cell. ► a-Si thin films on silicon wafers were patterned by the alkaline solution. ► Selective emitter was formed with patterned a-Si as diffusion barrier for solar cell. -- Abstract: Selective emitter for silicon solar cell was realized by employing a-Si thin films as the semi-transparent diffusion barrier. The a-Si thin films with various thicknesses (∼10–40 nm) were deposited by the electron-beam evaporation technique. Emitters with sheet resistances from 37 to 145 Ω/□ were obtained via POCl 3 diffusion process. The thickness of the a-Si diffusion barrier was optimized to be 15 nm for selective emitter in our work. Homemade mask which can dissolve in ethanol was screen-printed on a-Si film to make pattern. The a-Si film was then patterned in KOH solution to form finger-like design. Selective emitter was obtainable with one-step diffusion with patterned a-Si film on. Combinations of sheet resistances for the high-/low-level doped regions of 39.8/112.1, 36.2/88.8, 35.4/73.9 were obtained. These combinations are suitable for screen-printed solar cells. This preparation method of selective emitter based on a-Si diffusion barrier is a promising approach for low cost industrial manufacturing.

Process research on non-CZ silicon material

Science.gov (United States)

1982-01-01

High risk, high payoff research areas associated with he process for producing photovoltaic modules using non-CZ sheet material are investigated. All investigations are being performed using dendritic web silicon, but all processes are directly applicable to other ribbon forms of sheet material. The technical feasibility of forming front and back junctions in non-CZ silicon using liquid dopant techniques was determined. Numerous commercially available liquid phosphorus and boron dopant solutions are investigated. Temperature-time profiles to achieve N(+) and P(+) sheet resistivities of 60 + or - 10 and 40 + or - s10 ohms per square centimeter respectively are established. A study of the optimal method of liquid dopant application is performed. The technical feasibility of forming a liquid applied diffusion mask to replace the more costly chemical vapor deposited SiO2 diffusion mask was also determined.

Solidification and properties of photovoltaic silicon

International Nuclear Information System (INIS)

Anon.

2007-01-01

Strenuous efforts are being made to develop an economical process for purifying liquid metallurgical-grade silicon, in response to the growing shortages in high-purity silicon for use in manufacturing photovoltaic cells. A research project is studying this issue at C.E. Saclay, Gif-sur-Yvette, France, co-funded by ADEME (the French Environment and Energy Management Agency) and CEA-INSTN (French Atomic Energy Commission National Institute for Nuclear Science and Technology). (authors)

Doping of ZnO nanowires using phosphorus diffusion from a spin-on doped glass source

International Nuclear Information System (INIS)

Bocheux, A.; Robin, I. C.; Bonaimé, J.; Hyot, B.; Feuillet, G.; Kolobov, A. V.; Fons, P.; Mitrofanov, K. V.; Tominaga, J.; Tamenori, Y.

2014-01-01

In this article, we report on ZnO nanowires that were phosphorus doped using a spin on dopant glass deposition and diffusion method. Photoluminescence measurements suggest that this process yields p-doped ZnO. The spatial location of P atoms was studied using x-ray near-edge absorption structure spectroscopy and it is concluded that the doping is amphoteric with P atoms located on both Zn and O sites

Substoichiometric extraction of phosphorus

International Nuclear Information System (INIS)

Shigematsu, T.; Kudo, K.

1981-01-01

A study of the substoichiometric extraction of phosphorus is described. Phosphorus was extracted in the form of ternary compounds such as ammonium phosphomolybdate, 8-hydroxyquinolinium phosphomolybdate, tetraphenylarsonium phosphomolybdate and tri-n-octylamine phosphomolybdate. Consequently, phosphorus was extracted substoichiometrically by the addition of a substoichiometric amount of molybdenum for the four phosphomolybdate compounds. On the other hand, phosphorus could be separated substoichiometrically with a substoichiometric amount of tetraphenylarsonium chloride or tri-n-octylamine. Stoichiometric ratios of these ternary compounds obtained substoichiometrically were 1:12:3 for phosphorus, molybdenum and organic reagent. The applicability of these compounds to phosphorus determination is also discussed. (author)

Chemomechanical nanolithography: nanografting on silicon and factors impacting linewidth.

Science.gov (United States)

Lee, Michael V; Hoffman, Melinda Tonks; Barnett, Katherine; Geiss, John-Mark; Smentkowski, Vincent S; Linford, Matthew R; Davis, Robert C

2006-06-01

We present a two-fold extension of previous work on Atomic Force Microscope-based chemomechanical functionalization: (1) chemomechanical nanografting, which extends chemomechanical functionalization to a more stable initial surface, and (2) linewidth studies that show the impact of force and Atomic Force Microscope probe tip wear on patterning resolution. Alkene, alcohol, and alkyl halide molecules were nanografted to silicon and imaged with in situ atomic force microscopy, time-of-flight secondary ion mass spectrometry with Automated eXpert Spectrum Image Analysis, and scanning electron microscopy. Chemomechanical nanografting demonstrated linewidths down to 50 nm. Lines written on hydrogen-terminated silicon were used to explore the impact of tip radius and tip wear on linewidth when using Si3N4 coated tips.

Monolayer atomic crystal molecular superlattices

Science.gov (United States)

Wang, Chen; He, Qiyuan; Halim, Udayabagya; Liu, Yuanyue; Zhu, Enbo; Lin, Zhaoyang; Xiao, Hai; Duan, Xidong; Feng, Ziying; Cheng, Rui; Weiss, Nathan O.; Ye, Guojun; Huang, Yun-Chiao; Wu, Hao; Cheng, Hung-Chieh; Shakir, Imran; Liao, Lei; Chen, Xianhui; Goddard, William A., III; Huang, Yu; Duan, Xiangfeng

2018-03-01

Artificial superlattices, based on van der Waals heterostructures of two-dimensional atomic crystals such as graphene or molybdenum disulfide, offer technological opportunities beyond the reach of existing materials. Typical strategies for creating such artificial superlattices rely on arduous layer-by-layer exfoliation and restacking, with limited yield and reproducibility. The bottom-up approach of using chemical-vapour deposition produces high-quality heterostructures but becomes increasingly difficult for high-order superlattices. The intercalation of selected two-dimensional atomic crystals with alkali metal ions offers an alternative way to superlattice structures, but these usually have poor stability and seriously altered electronic properties. Here we report an electrochemical molecular intercalation approach to a new class of stable superlattices in which monolayer atomic crystals alternate with molecular layers. Using black phosphorus as a model system, we show that intercalation with cetyl-trimethylammonium bromide produces monolayer phosphorene molecular superlattices in which the interlayer distance is more than double that in black phosphorus, effectively isolating the phosphorene monolayers. Electrical transport studies of transistors fabricated from the monolayer phosphorene molecular superlattice show an on/off current ratio exceeding 107, along with excellent mobility and superior stability. We further show that several different two-dimensional atomic crystals, such as molybdenum disulfide and tungsten diselenide, can be intercalated with quaternary ammonium molecules of varying sizes and symmetries to produce a broad class of superlattices with tailored molecular structures, interlayer distances, phase compositions, electronic and optical properties. These studies define a versatile material platform for fundamental studies and potential technological applications.

Use of Phosphorus Isotopes for Improving Phosphorus Management in Agricultural Systems

International Nuclear Information System (INIS)

2016-10-01

Phosphorus is an essential element in plant, human and animal nutrition. Soils with low levels of phosphorus are widespread in many regions of the world, and the deficiency limits plant growth and reduces crop production and food quality. This publication provides comprehensive and up to date information on several topics related to phosphorus in soil–plant systems, in agricultural systems and in the environment. It presents the theoretical background as well as practical information on how to use nuclear and radioisotope tracer techniques in both laboratory and greenhouse experiments to assess soil phosphorus forms and plant-available soil phosphorus pools, and to understand the cycling processes in soil–plant systems. The publication focuses on practical applications of radiotracer techniques and can serve as resource material for research projects on improving sustainable phosphorus management in agricultural systems and as practical guidance on the use of phosphate isotopes in soil–plant research

Stable Protein-Repellent Zwitterionic Polymer Brushes Grafted from Silicon Nitride

NARCIS (Netherlands)

Nguyen, A.T.; Baggerman, J.; Paulusse, J.M.J.; Rijn, van C.J.M.; Zuilhof, H.

2011-01-01

Zwitterionic poly(sulfobetaine acrylamide) (SBMAA) brushes were grafted from silicon-rich silicon nitride (SixN4, x > 3) surfaces by atom transfer radical polymerization (ATRP) and studied in protein adsorption experiments. To this aim ATRP initiators were immobilized onto SixN4 through stable

Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System.

Science.gov (United States)

Zhang, Xiao-Ying; Hsu, Chia-Hsun; Lien, Shui-Yang; Chen, Song-Yan; Huang, Wei; Yang, Chih-Hsiang; Kung, Chung-Yuan; Zhu, Wen-Zhang; Xiong, Fei-Bing; Meng, Xian-Guo

2017-12-01

Hafnium oxide (HfO 2 ) thin films have attracted much attention owing to their usefulness in equivalent oxide thickness scaling in microelectronics, which arises from their high dielectric constant and thermodynamic stability with silicon. However, the surface passivation properties of such films, particularly on crystalline silicon (c-Si), have rarely been reported upon. In this study, the HfO 2 thin films were deposited on c-Si substrates with and without oxygen plasma pretreatments, using a remote plasma atomic layer deposition system. Post-annealing was performed using a rapid thermal processing system at different temperatures in N 2 ambient for 10 min. The effects of oxygen plasma pretreatment and post-annealing on the properties of the HfO 2 thin films were investigated. They indicate that the in situ remote plasma pretreatment of Si substrate can result in the formation of better SiO 2 , resulting in a better chemical passivation. The deposited HfO 2 thin films with oxygen plasma pretreatment and post-annealing at 500 °C for 10 min were effective in improving the lifetime of c-Si (original lifetime of 1 μs) to up to 67 μs.

Reaction studies of hot silicon and germanium radicals. Period covered: September 1, 1977--August 31, 1978

International Nuclear Information System (INIS)

Gaspar, P.P.

1978-01-01

The experimental approach to attaining the goals of this research program is briefly outlined and the progress made in the last year is reviewed in sections entitled: primary steps in the reaction of recoiling silicon and germanium atoms and the identification of reactive intermediates; thermally induced silylene and germylene reactions; the role of ionic reactions in the chemistry of recoiling silicon atoms and other ion-molecule reactions studies; and silicon free radical chemistry

phosphorus sorption capacity as a guide for phosphorus availability

African Journals Online (AJOL)

Prof. Adipala Ekwamu

drained, light yellowish brown, loamy sand ... Dongola 2 Akked series: Deep, dark grayish brown, clay ... energy. Statistical analysis. Data collected were statistically analysed using ANOVA of MStatc ... phosphorus sorbed versus phosphorus.

Basic mechanisms of atomic displacement production in cubic silicon carbide: A molecular dynamics study

International Nuclear Information System (INIS)