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Sample records for sige multilayer heterostructures

  1. Spin-polarized photoemission from SiGe heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ferrari, A.; Bottegoni, F.; Isella, G.; Cecchi, S.; Chrastina, D.; Finazzi, M.; Ciccacci, F. [LNESS-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)

    2013-12-04

    We apply the principles of Optical Orientation to measure by Mott polarimetry the spin polarization of electrons photoemitted from different group-IV heterostructures. The maximum measured spin polarization, obtained from a Ge/Si{sub 0.31}Ge{sub 0.69} strained film, undoubtedly exceeds the maximum value of 50% attainable in bulk structures. The explanation we give for this result lies in the enhanced band orbital mixing between light hole and split-off valence bands as a consequence of the compressive strain experienced by the thin Ge layer.

  2. Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix

    International Nuclear Information System (INIS)

    Talochkin, A. B.; Chistokhin, I. B.

    2011-01-01

    Longitudinal photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots grown pseudomorphically to the Si matrix are studied. Lines of optical transitions between hole levels of quantum dots and Si electronic states are observed. This allowed us to construct a detailed energy-level diagram of electron-hole levels of the structure. It is shown that hole levels of pseudomorphic Ge quantum dots are well described by the simplest “quantum box” model using actual sizes of Ge islands. The possibility of controlling the position of the long-wavelength photosensitivity edge by varying the growth parameters of Si/Ge structures with Ge quantum dots is determined.

  3. The thermal conductivity of SiGe heterostructure nanowires with different cores and shells

    Energy Technology Data Exchange (ETDEWEB)

    Bi, Kedong, E-mail: kedongbi@seu.edu.cn [Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing, 211189 (China); Wang, Jianqiang; Wang, Yujuan; Sha, Jingjie [Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing, 211189 (China); Wang, Zan [School of Mechanical and Electrical Engineering, Henan University of Technology, Zhengzhou, 450001 (China); Chen, Minhua [Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing, 211189 (China); Chen, Yunfei, E-mail: yunfeichen@seu.edu.cn [Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing, 211189 (China)

    2012-08-20

    Non-equilibrium molecular dynamics (NEMD) simulation is performed to investigate thermal conductivities of two kinds of SiGe heterostructure nanowires (NWs), core(Si)/shell(Ge) and core(Ge)/(Si) NWs, using different interaction potentials between core and shell atoms. The influence of the proportion of core particles on the overall thermal conductivity of NWs is studied as well. Simulation results demonstrate that thermal conductivities of each kind of NWs with strong potential between core and shell atoms are higher than those of their counterparts with weak interaction between Si and Ge atoms. It is also found that thermal conductivities of both kinds of Si/Ge heterostructure NWs reduce with the decrease of the proportion of core atoms when the shell is not very thick. -- Highlights: ► Van der Waals and covalent interactions between the core and shell are compared. ► The role of shell in core–shell nanowire's thermal conductivity is investigated. ► A good heat conductor should be viewed as shell to get low thermal conductivity. ► The thermal conductivity is influenced by the proportion of core particles.

  4. Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures

    KAUST Repository

    Dong, Y.

    2014-07-26

    Si-Ge interdiffusion and strain relaxation were studied in a metastable SiGe epitaxial structure. With Ge concentration profiling and ex-situ strain analysis, it was shown that during thermal anneals, both Si-Ge interdiffusion and strain relaxation occurred. Furthermore, the time evolutions of both strain relaxation and interdiffusion were characterized. It showed that during the ramp-up stage of thermal anneals at higher temperatures (800°C and 840°C), the degree of relaxation, R, reached a “plateau”, while interdiffusion was negligible. With the approximation that the R value is constant after the ramp-up stage, a quantitative interdiffusivity model was built to account for both the effect of strain relaxation and the impact of the relaxation induced dislocations, which gave good agreement with the experiment data.

  5. The enhancement of the interdiffusion in Si/Ge amorphous artificial multilayers by additions of B and Au

    International Nuclear Information System (INIS)

    Park, B.; Spaepen, F.; Poate, J.M.; Jacobson, D.C.

    1990-01-01

    Amorphous Si/amorphous Ge artificial multilayers were prepared by ion beam sputtering. Boron or gold impurities were introduced into the Si/Ge multilayers by ion implantation or during the sputtering deposition. Diffusion coefficients were determined by measuring the decrease in the intensity of the first order X-ray diffraction peak resulting from the composition modulation. It was found that the interdiffusion of Si and Ge in their amorphous phase can be enhanced by doping. The enhancement factor is independent of the degree of structural relaxation, as observed by the decrease of diffusivity with annealing time, of the amorphous phase. A model is proposed that describes this behavior in terms of electronic effects, introduced by the dopants, on the pre-existing structural defects governing diffusion

  6. Multilayer Graphene–WSe2 Heterostructures for WSe2 Transistors

    KAUST Repository

    Tang, Hao-Ling

    2017-11-29

    Two-dimensional (2D) materials are drawing growing attention for next-generation electronics and optoelectronics owing to its atomic thickness and unique physical properties. One of the challenges posed by 2D materials is the large source/drain (S/D) series resistance due to their thinness, which may be resolved by thickening the source and drain regions. Recently explored lateral graphene–MoS21−3 and graphene–WS21,4 heterostructures shed light on resolving the mentioned issues owing to their superior ohmic contact behaviors. However, recently reported field-effect transistors (FETs) based on graphene–TMD heterostructures have only shown n-type characteristics. The lack of p-type transistor limits their applications in complementary metal-oxide semiconductor electronics. In this work, we demonstrate p-type FETs based on graphene–WSe2 lateral heterojunctions grown with the scalable CVD technique. Few-layer WSe2 is overlapped with the multilayer graphene (MLG) at MLG–WSe2 junctions such that the contact resistance is reduced. Importantly, the few-layer WSe2 only forms at the junction region while the channel is still maintained as a WSe2 monolayer for transistor operation. Furthermore, by imposing doping to graphene S/D, 2 orders of magnitude enhancement in Ion/Ioff ratio to ∼108 and the unipolar p-type characteristics are obtained regardless of the work function of the metal in ambient air condition. The MLG is proposed to serve as a 2D version of emerging raised source/drain approach in electronics.

  7. Si/Ge hetero-structure nanotube tunnel field effect transistor

    Science.gov (United States)

    Hanna, A. N.; Hussain, M. M.

    2015-01-01

    We discuss the physics of conventional channel material (silicon/germanium hetero-structure) based transistor topology mainly core/shell (inner/outer) gated nanotube vs. gate-all-around nanowire architecture for tunnel field effect transistor application. We show that nanotube topology can result in higher performance through higher normalized current when compared to nanowire architecture at Vdd = 1 V due to the availability of larger tunneling cross section and lower Shockley-Reed-Hall recombination. Both architectures are able to achieve sub 60 mV/dec performance for more than five orders of magnitude of drain current. This enables the nanotube configuration achieving performance same as the nanowire architecture even when Vdd is scaled down to 0.5 V.

  8. Si/Ge hetero-structure nanotube tunnel field effect transistor

    KAUST Repository

    Hanna, A. N.

    2015-01-07

    We discuss the physics of conventional channel material (silicon/germanium hetero-structure) based transistor topology mainly core/shell (inner/outer) gated nanotube vs. gate-all-around nanowire architecture for tunnel field effect transistor application. We show that nanotube topology can result in higher performance through higher normalized current when compared to nanowire architecture at Vdd-=-1-V due to the availability of larger tunneling cross section and lower Shockley-Reed-Hall recombination. Both architectures are able to achieve sub 60-mV/dec performance for more than five orders of magnitude of drain current. This enables the nanotube configuration achieving performance same as the nanowire architecture even when Vdd is scaled down to 0.5-V.

  9. The structural and electrical characterisation of SiGe heterostructures deposited on strain relaxed virtual substrates

    International Nuclear Information System (INIS)

    Hammond, R.

    1998-09-01

    The influence of lateral dimensions on the relaxation mechanism and the resulting effect on the surface topography of limited-area, linearly graded Si 1-x Ge x virtual substrates has been investigated for the first time. A dramatic change in the relaxation mechanism of such buffer layers has been observed for depositions on Si mesa pillars of lateral dimensions of 10μm and below. For such depositions, misfit dislocations are able to extend, unhindered, and terminate at the edges of the growth zone. In this manner, orthogonal misfit dislocation interactions are avoided, yielding a surface free of the problematic surface cross-hatch roughening. However, as the lateral dimension of the growth zone is increased to 20μm, orthogonal misfit interactions occur and relaxation is dominated by the Modified Frank-Read (MFR) multiplication mechanism. The resulting surface morphology shows a pronounced surface cross-hatch roughening. It is proposed that such cross-hatch roughening is a direct consequence of the cooperative stress fields associated with the MFR mechanism. It is postulated that the method of limited-area, linearly graded buffer layers provides a unique opportunity, by which 'ideal' virtual substrates, free of surface cross-hatch and threading dislocations, may be produced to any Ge content. In addition, a unique method by which the electrical performance of low temperature, strained layer depositions may be optimised is discussed. The method relies on the elimination of as-grown lattice imperfections via a post growth thermal anneal treatment. A 25-fold increase in low temperature hole mobility of a Si 0.5 Ge 0.5 /Si 0.7 Ge 0.3 heterostructure has been demonstrated using a 30minute, 750 deg C in-situ, post growth anneal. (author)

  10. In situ catalytic growth of large-area multilayered graphene/MoS2 heterostructures.

    Science.gov (United States)

    Fu, Wei; Du, Fei-Hu; Su, Juan; Li, Xin-Hao; Wei, Xiao; Ye, Tian-Nan; Wang, Kai-Xue; Chen, Jie-Sheng

    2014-04-14

    Stacking various two-dimensional atomic crystals on top of each other is a feasible approach to create unique multilayered heterostructures with desired properties. Herein for the first time, we present a controlled preparation of large-area graphene/MoS2 heterostructures via a simple heating procedure on Mo-oleate complex coated sodium sulfate under N2 atmosphere. Through a direct in situ catalytic reaction, graphene layer has been uniformly grown on the MoS2 film formed by the reaction of Mo species with Species, which is from the carbothermal reduction of sodium sulfate. Due to the excellent graphene "painting" on MoS2 atomic layers, the significantly shortened lithium ion diffusion distance and the markedly enhanced electronic conductivity, these multilayered graphene/MoS2 heterostructures exhibit high specific capacity, unprecedented rate performance and outstanding cycling stability, especially at a high current density, when used as an anode material for lithium batteries. This work provides a simple but efficient route for the controlled fabrication of large-area multilayered graphene/metal sulfide heterostructures with promising applications in battery manufacture, electronics or catalysis.

  11. Design of polymer multilayer heterostructure broadband reflector for the near-infrared using genetic algorithm

    Science.gov (United States)

    Cheng, Xiang; Yang, Weimin; Lin, Chengyou; Ding, Yumei; Jiao, Zhiwei

    2017-07-01

    A broadband reflector for the near-infrared (NIR) was designed using a multilayer heterostructure consisting of several quarter-wave stacks (QWSs), which were composed of polymethyl methacrylate (PMMA) and polyethylene terephthalate (PET) films. Taking the solar power density as the target and using the Bragg wavelength of each QWS as the variable, the genetic algorithm was applied to look for the optimal multilayer heterostructure for broadband NIR reflection. As high as 99.46% total energy reflectivity in the short-wavelength NIR region (780 to 1100 nm) and 89.56% total energy transmissivity in the visible light region (380 to 780 nm) were realized by a multilayer heterostructure consisting of six quarter-wave PMMA/PET stacks, which can be easily fabricated based on the micronano multilayer coextrusion technology. The designed structure possesses good stability, and its total energy reflectivity is not sensitive to the incident angle of light. The proposed broadband NIR reflector can be applied to buildings as energy-saving films.

  12. Ultra-low thermal conductivity of high-interface density Si/Ge amorphous multilayers

    Science.gov (United States)

    Goto, Masahiro; Xu, Yibin; Zhan, Tianzhuo; Sasaki, Michiko; Nishimura, Chikashi; Kinoshita, Yohei; Ishikiriyama, Mamoru

    2018-04-01

    Owing to their phonon scattering and interfacial thermal resistance (ITR) characteristics, inorganic multilayers (MLs) have attracted considerable attention for thermal barrier applications. In this study, a-Si/a-Ge MLs with layer thicknesses ranging from 0.3 to 5 nm and different interfacial elemental mixture states were fabricated using a combinatorial sputter-coating system, and their thermal conductivities were measured via a frequency-domain thermo-reflectance method. An ultra-low thermal conductivity of κ = 0.29 ± 0.01 W K‑1 m‑1 was achieved for a layer thickness of 0.8 nm. The ITR was found to decrease from 8.5 × 10‑9 to 3.6 × 10‑9 m2 K W‑1 when the interfacial density increases from 0.15 to 0.77 nm‑1.

  13. Mixed multilayered vertical heterostructures utilizing strained monolayer WS2

    Science.gov (United States)

    Sheng, Yuewen; Xu, Wenshuo; Wang, Xiaochen; He, Zhengyu; Rong, Youmin; Warner, Jamie H.

    2016-01-01

    Creating alternating layers of 2D materials forms vertical heterostructures with diverse electronic and opto-electronic properties. Monolayer WS2 grown by chemical vapour deposition can have inherent strain due to interactions with the substrate. The strain modifies the band structure and properties of monolayer WS2 and can be exploited in a wide range of applications. We demonstrate a non-aqueous transfer method for creating vertical stacks of mixed 2D layers containing a strained monolayer of WS2, with Boron Nitride and Graphene. The 2D materials are all grown by CVD, enabling large area vertical heterostructures to be formed. WS2 monolayers grown by CVD directly on Si substrates with SiO2 surface are easily washed off by water and this makes aqueous based transfer methods challenging for creating vertical stacks on the growth substrate. 2D hexagonal Boron Nitride films are used to provide an insulating layer that limits interactions with a top graphene layer and preserve the strong photoluminescence from the WS2. This transfer method is suitable for layer by layer control of 2D material vertical stacks and is shown to be possible for all CVD grown samples, which opens up pathways for the rapid large scale fabrication of vertical heterostructure systems with atomic thickness depth control and large area coverage.Creating alternating layers of 2D materials forms vertical heterostructures with diverse electronic and opto-electronic properties. Monolayer WS2 grown by chemical vapour deposition can have inherent strain due to interactions with the substrate. The strain modifies the band structure and properties of monolayer WS2 and can be exploited in a wide range of applications. We demonstrate a non-aqueous transfer method for creating vertical stacks of mixed 2D layers containing a strained monolayer of WS2, with Boron Nitride and Graphene. The 2D materials are all grown by CVD, enabling large area vertical heterostructures to be formed. WS2 monolayers grown by

  14. Interfacial thermal conductance in multilayer graphene/phosphorene heterostructure

    International Nuclear Information System (INIS)

    Zhang, Ying-Yan; Pei, Qing-Xiang; Mai, Yiu-Wing; Lai, Siu-Kai

    2016-01-01

    Vertical integration of 2D materials has recently appeared as an effective method for the design of novel nano-scale devices. Using non-equilibrium molecular dynamics simulations, we study the interfacial thermal transport property of graphene/phosphorene heterostructures where phosphorene is sandwiched in between graphene. Various modulation techniques are thoroughly explored. We found that the interfacial thermal conductance at the interface of graphene and phosphorene can be enhanced significantly by using vacancy defects, hydrogenation and cross-plane compressive strain. By contrast, the reduction in the interfacial thermal conductance can be achieved by using cross-plane tensile strain. Our results provide important guidelines for manipulating the thermal transport in graphene/phosphorene based-nano-devices. (paper)

  15. Characterization of amorphous multilayered ZnO-SnO2 heterostructure thin films and their field effect electronic properties

    International Nuclear Information System (INIS)

    Lee, Su-Jae; Hwang, Chi-Sun; Pi, Jae-Eun; Yang, Jong-Heon; Oh, Himchan; Cho, Sung Haeng; Cho, Kyoung-Ik; Chu, Hye Yong

    2014-01-01

    Multilayered ZnO-SnO 2 heterostructure thin films were produced using pulsed laser ablation of pie-shaped ZnO-SnO 2 oxides target, and their structural and field effect electronic transport properties were investigated as a function of the thickness of the ZnO and SnO 2 layers. The films have an amorphous multilayered heterostructure composed of the periodic stacking of the ZnO and SnO 2 layers. The field effect electronic properties of amorphous multilayered ZnO-SnO 2 heterostructure thin film transistors (TFTs) are highly dependent on the thickness of the ZnO and SnO 2 layers. The highest electron mobility of 37 cm 2 /V s, a low subthreshold swing of a 0.19 V/decade, a threshold voltage of 0.13 V, and a high drain current on-to-off ratio of ∼10 10 obtained for the amorphous multilayered ZnO(1.5 nm)-SnO 2 (1.5 nm) heterostructure TFTs. These results are presumed to be due to the unique electronic structure of an amorphous multilayered ZnO-SnO 2 heterostructure film consisting of ZnO, SnO 2 , and ZnO-SnO 2 interface layers

  16. XRD analysis of strained Ge-SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(0 0 1) substrates

    International Nuclear Information System (INIS)

    Franco, N.; Barradas, N.P.; Alves, E.; Vallera, A.M.; Morris, R.J.H.; Mironov, O.A.; Parker, E.H.C.

    2005-01-01

    Ge/Si 1-x Ge x inverted modulation doped heterostructures with Ge channel thickness of 16 and 20 nm were grown by a method of hybrid epitaxy followed by ex situ annealing at 650 deg. C for p-HMOS application. The thicker layers of the virtual substrate (6000 nm graded SiGe up to x = 0.6 and 1000 nm uniform composition with x = 0.6) were produced by ultrahigh vacuum chemical vapor deposition (UHV-CVD) while the thinner, Si(2 nm)-SiGe(20 nm)-Ge-SiGe(15 nm + 5 nm B-doped + 20 nm) active layers were grown by low temperature solid-source (LT-SS) MBE at T = 350 deg. C. As-grown and annealed samples were measured by X-ray diffraction (XRD). Reciprocal space maps (RSMs) allowed us to determine non-destructively the precise composition (∼1%) and strain of the Ge channel, along with similar information regarding the other layers that made up the whole structure. Layer thickness was determined with complementary high-resolution Rutherford backscattering (RBS) experiments

  17. Diode-like electrical characteristics of SiGe wrinkled heterostructure operating under both forward and reverse bias

    Science.gov (United States)

    Li, H.; Chen, T. P.; Chang, C.; Cheng, H. H.; Chang, Guo-En; Hung, K. M.

    2016-02-01

    We report the electrical behaviour of heterostructure channels with spatially deformed wrinkle patterns at the edge. Instead of the linear current-voltage relationship, a diode-like current-voltage trace is observed under both forward and reverse bias. Analysing the position-dependent strain and energy levels of the wrinkled heterostructure shows that the energy minimum transforms from a two-dimensional plane at the heterointerface to a one-dimensional trajectory at the wrinkled edge characterized by a potential. When a voltage is applied, the carriers at the left and right electrodes travel through a one-dimensional potential, analogously to how carriers move across a potential in the p-n junction, resulting in diode-like electrical characteristics. This work represents a step forward in developing the wrinkled structure for electronic devices.

  18. Optical phonons in PbTe/CdTe multilayer heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Novikova, N. N.; Yakovlev, V. A. [Russian Academy of Sciences, Institute for Spectroscopy (Russian Federation); Kucherenko, I. V., E-mail: kucheren@sci.lebedev.ru [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation); Karczewski, G. [Polish Academy of Sciences, Institute of Physics (Poland); Aleshchenko, Yu. A.; Muratov, A. V.; Zavaritskaya, T. N.; Melnik, N. N. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)

    2015-05-15

    The infrared reflection spectra of PbTe/CdTe multilayer nanostructures grown by molecular-beam epitaxy are measured in the frequency range of 20–5000 cm{sup −1} at room temperature. The thicknesses and high-frequency dielectric constants of the PbTe and CdTe layers and the frequencies of the transverse optical (TO) phonons in these structures are determined from dispersion analysis of the spectra. It is found that the samples under study are characterized by two TO phonon frequencies, equal to 28 and 47 cm{sup −1}. The first frequency is close to that of TO phonons in bulk PbTe, and the second is assigned to the optical mode in structurally distorted interface layers. The Raman-scattering spectra upon excitation with the radiation of an Ar{sup +} laser at 514.5 nm are measured at room and liquid-nitrogen temperatures. The weak line at 106 cm{sup −1} observed in these spectra is attributed to longitudinal optical phonons in the interface layers.

  19. Longitudinal conductivity of LaF3/SrF2 multilayer heterostructures.

    Science.gov (United States)

    Vergentev, Tikhon; Banshchikov, Alexander; Filimonov, Alexey; Koroleva, Ekaterina; Sokolov, Nikolay; Wurz, Marc Christopher

    2016-01-01

    LaF 3 /SrF 2 multilayer heterostructures with thicknesses of individual layers in the range 5-100 nm have been grown on MgO(100) substrates using molecular beam epitaxy. The longitudinal conductivity of the films has been measured using impedance spectroscopy in the frequency range 10 -1 -10 6  Hz and a temperature range 300-570 K. The ionic DC conductivities have been determined from Nyquist impedance diagrams and activation energies from the Arrhenius-Frenkel equation. An increase of the DC conductivity has been observed to accompany decreased layer thickness for various thicknesses as small as 25 nm. The greatest conductivity has been shown for a multilayer heterostructure having thicknesses of 25 nm per layer. The structure has a conductivity two orders of magnitude greater than pure LaF 3 bulk material. The increasing conductivity can be understood as a redistribution of charge carriers through the interface due to differing chemical potentials of the materials, by strong lattice-constant mismatch, and/or by formation of a solid La 1-x Sr x F 3-x solution at the interface during the growth process.

  20. Thermoelectric transport parallel to the planes in a multilayered Mott-Hubbard heterostructure

    Science.gov (United States)

    Zlatić, Veljko; Freericks, J. K.

    2017-12-01

    We present a theory for charge and heat transport parallel to the interfaces of a multilayer (ML) of the ABA type, where A and B are materials with strongly correlated electrons. When separated, both materials are half-filled Mott-Hubbard insulators with large gaps in their excitation spectrum. In a ML, the renormalization of the energy bands gives rise to a charge reconstruction which breaks the charge neutrality of the planes next to the interface. The ensuing electrical field couples self-consistently to the itinerant electrons, so that the properties of the ML crucially depend on an interplay between the on-site Coulomb forces and the long range electrostatic forces. Using the Falicov-Kimball model, we compute the Green's function and the local charge on each plane of the ML by inhomogeneous DMFT and find the corresponding electrical potential from Poisson's equation. The self-consistent solution is obtained by an iterative procedure, which yields the reconstructed charge profile, the electrical potential, the planar density of states, the transport function, and the transport coefficients of the device. For the right choice of parameters, we find that a heterostructure built of two Mott-Hubbard insulators exhibits, in a large temperature interval, a linear conductivity and a large temperature-independent thermopower. The charge and energy currents are confined to the central part of the ML. Our results indicate that correlated multilayers have the potential for applications; by tuning the band shift and the Coulomb correlation on the central planes, we can bring the chemical potential in the immediate proximity of the Mott-Hubbard gap edge and optimize the transport properties of the device. In such a heterostructure, a small gate voltage can easily induce a MI transition. Furthermore, the right combination of strongly correlated materials with small ZT can produce, theoretically at least, a heterostructure with a large ZT.

  1. Theoretical prediction of high electron mobility in multilayer MoS2 heterostructured with MoSe2

    Science.gov (United States)

    Ji, Liping; Shi, Juan; Zhang, Z. Y.; Wang, Jun; Zhang, Jiachi; Tao, Chunlan; Cao, Haining

    2018-01-01

    Two-dimensional (2D) MoS2 has been considered to be one of the most promising semiconducting materials with the potential to be used in novel nanoelectronic devices. High carrier mobility in the semiconductor is necessary to guarantee a low power dissipation and a high switch speed of the corresponding electronic device. Strain engineering in 2D materials acts as an important approach to tailor and design their electronic and carrier transport properties. In this work, strain is introduced to MoS2 through perpendicularly building van der Waals heterostructures MoSe2-MoS2. Our first-principles calculations demonstrate that acoustic-phonon-limited electron mobility can be significantly enhanced in the heterostructures compared with that in pure multilayer MoS2. It is found that the effective electron mass and the deformation potential constant are relatively smaller in the heterostructures, which is responsible for the enhancement in the electron mobility. Overall, the electron mobility in the heterostructures is about 1.5 times or more of that in pure multilayer MoS2 with the same number of layers for the studied structures. These results indicate that MoSe2 is an excellent material to be heterostructured with multilayer MoS2 to improve the charge transport property.

  2. Design of broadband near-infrared reflector using polymer multilayer heterostructure with low-refractive-index contrast

    Science.gov (United States)

    Cheng, Xiang; Yang, Weimin; Lin, Chengyou; Ding, Yumei; Jiao, Zhiwei

    2017-10-01

    In the paper, to achieve total reflection in the short-wavelength near-infrared (NIR) region (780-1100 nm), a broadband NIR reflector using polymer multilayer heterostructure composed of several quarter-wave stacks was proposed. The reflector used two kinds of polymer materials: PMMA and PET with low-refractive-index contrast. Taking the solar power density as the target and the Bragg wavelength of each quarter-wave stack as the variable, a searching method based on arithmetic progression was applied to find the optimal results for broadband NIR reflection. The simulation results show that the broadband NIR reflector can obtain higher total reflectivity with the increase of the number of quarter-wave stacks, and 99.06% total reflectivity in the short-wavelength NIR region can be achieved by the polymer multilayer heterostructure with six quarter-wave stacks. The proposed polymer multilayer heterostructure can be fabricated by the micro-nanomultilayer co-extrusion technology based on torsion lamination, and could be applied in agriculture as NIR-blocking films.

  3. Computational modeling of novel InN/Al 0.30In 0.70N multilayer nano-heterostructure

    Science.gov (United States)

    Alvi, P. A.; Gupta, Sapna; Sharma, Meha; Jha, Swati; Rahman, F.

    2011-10-01

    Most of the low dimension heterostructures that have been modeled and simulated to determine various important quantum mechanical parameters are based on GaN/AlGaN and GaAs/AlGaAs. The heterostructures of newly invented material (InN/AlInN), however, have not been well studied. In this paper, novel multilayer nano-heterostructure InN/Al 0.30In 0.70N of length 288 nm have been modeled and studied to compute the energy band profile within the frame work of eight band k.p method, which graphs the energy of conduction and valence band edges versus position, and potential distribution throughout the modeled and one dimensionally simulated nano-heterostructure. In addition, electron-hole densities along with space charge densities have also been calculated for 30% Al concentration. The novelty of the nano-heterostructure due to unusual properties of InN studied by FP-LAPW and LCAO methods is also discussed. The results obtained in this paper will be applicable to the newly invented nano-opto-electronic devices.

  4. Optimising the visibility of graphene and graphene oxide on gold with multilayer heterostructures.

    Science.gov (United States)

    Velický, Matěj; Hendren, William R; Donnelly, Gavin Eugene; Katzen, Joel Michael; Bowman, Robert M; Huang, Fumin

    2018-04-17

    Metals have been increasingly used as substrates in devices based on two-dimensional (2D) materials. However, the high reflectivity of bulk metals results in low optical contrast (<3%) and therefore poor visibility of transparent mono- and few-layer 2D materials on these surfaces. Here we demonstrate that by engineering the complex reflectivity of a purpose-designed multilayer heterostructure composed of thin Au films (2 - 8 nm) on SiO2/Si substrate, the optical contrast of graphene and graphene oxide (GO) can be significantly enhanced in comparison to bulk Au, up to about 3 and 5 times, respectively. In particular, we achieved ~17% optical contrast for monolayer GO, which is even 2 times higher than that on bare SiO2/Si substrate. The experimental results are in good agreement with theoretical simulations. This concept is demonstrated for Au, but the methodology is applicable to other metals and can be adopted to design a variety of high-contrast metallic substrates. This will facilitate research and applications of 2D materials in areas such as plasmonics, photonics, catalysis and sensors. © 2018 IOP Publishing Ltd.

  5. Infrared reflection spectra of multilayer epitaxial heterostructures with embedded InAs and GaAs layers

    International Nuclear Information System (INIS)

    Seredin, P. V.; Domashevskaya, E. P.; Lukin, A. N.; Arsent'ev, I. N.; Vinokurov, D. A.; Tarasov, I. S.

    2008-01-01

    The effect of the thickness of embedded InAs and GaAs layers on the infrared reflection spectra of lattice vibrations for AlInAs/InAs/AlInAs, InGaAs/GaAs/InGaAs, and AlInAs/InGaAs/GaAs/InGaAs/AlInAs multilayer epitaxial heterostructures grown by MOC hydride epitaxy on InP (100) substrates is studied. Relative stresses emerging in the layers surrounding the embedded layers with variation in the number of monolayers from which the quantum dots are formed and with variation the thickness of the layers themselves surrounding the embedded layers are evaluated.

  6. Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Khabibullin, R. A., E-mail: khabibullin@isvch.ru; Shchavruk, N. V.; Pavlov, A. Yu.; Ponomarev, D. S.; Tomosh, K. N.; Galiev, R. R.; Maltsev, P. P. [Russian Academy of Sciences, Institute of Ultrahigh Frequency Semiconductor Electronics (Russian Federation); Zhukov, A. E.; Cirlin, G. E.; Zubov, F. I.; Alferov, Zh. I. [Russian Academy of Sciences, Saint Petersburg Academic University—Nanotechnology Research and Education Center (Russian Federation)

    2016-10-15

    The Postgrowth processing of GaAs/AlGaAs multilayer heterostructures for terahertz quantumcascade lasers (QCLs) are studied. This procedure includes the thermocompression bonding of In–Au multilayer heterostructures with a doped n{sup +}-GaAs substrate, mechanical grinding, and selective wet etching of the substrate, and dry etching of QCL ridge mesastripes through a Ti/Au metallization mask 50 and 100 μm wide. Reactive-ion-etching modes with an inductively coupled plasma source in a BCl{sub 3}/Ar gas mixture are selected to obtain vertical walls of the QCL ridge mesastripes with minimum Ti/Au mask sputtering.

  7. Sublattice reversal in GaAs/Ge/GaAs (113)B heterostructures and its application to THz emitting devices based on a coupled multilayer cavity

    Science.gov (United States)

    Lu, Xiangmeng; Kumagai, Naoto; Minami, Yasuo; Kitada, Takahiro

    2018-04-01

    We fabricated a coupled multilayer cavity with a GaAs/Ge/GaAs sublattice reversal structure for terahertz emission application. Sublattice reversal in GaAs/Ge/GaAs was confirmed by comparing the anisotropic etching profile of an epitaxial sample with those of reference (113)A and (113)B GaAs substrates. The interfaces of GaAs/Ge/GaAs were evaluated at the atomic level by scanning transmission electron microscopy (STEM) and energy-dispersive X-ray spectroscopy (EDX) mapping. Defect-free GaAs/Ge/GaAs heterostructures were observed in STEM images and the sublattice lattice was directly seen through atomic arrangements in EDX mapping. A GaAs/AlAs coupled multilayer cavity with a sublattice reversal structure was grown on the (113)B GaAs substrate after the confirmation of sublattice reversal. Smooth GaAs/AlAs interfaces were formed over the entire region of the coupled multilayer cavity structure both below and above the Ge layer. Two cavity modes with a frequency difference of 2.9 THz were clearly observed.

  8. Study of Si-Ge interdiffusion with phosphorus doping

    KAUST Repository

    Cai, Feiyang

    2016-10-28

    Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

  9. Strain-induced structural defects and their effects on the electrochemical performances of silicon core/germanium shell nanowire heterostructures.

    Science.gov (United States)

    Lin, Yung-Chen; Kim, Dongheun; Li, Zhen; Nguyen, Binh-Minh; Li, Nan; Zhang, Shixiong; Yoo, Jinkyoung

    2017-01-19

    We report on strain-induced structural defect formation in core Si nanowires of a Si/Ge core/shell nanowire heterostructure and the influence of the structural defects on the electrochemical performances in lithium-ion battery anodes based on Si/Ge core/shell nanowire heterostructures. The induced structural defects consisting of stacking faults and dislocations in the core Si nanowire were observed for the first time. The generation of stacking faults in the Si/Ge core/shell nanowire heterostructure is observed to prefer settling in either only the Ge shell region or in both the Ge shell and Si core regions and is associated with the increase of the shell volume fraction. The relaxation of the misfit strain in the [112] oriented core/shell nanowire heterostructure leads to subsequent gliding of Shockley partial dislocations, preferentially forming the twins. The observation of crossover of defect formation is of great importance for understanding heteroepitaxy in radial heterostructures at the nanoscale and for building three dimensional heterostructures for the various applications. Furthermore, the effect of the defect formation on the nanomaterial's functionality is investigated using electrochemical performance tests. The Si/Ge core/shell nanowire heterostructures enhance the gravimetric capacity of lithium ion battery anodes under fast charging/discharging rates compared to Si nanowires. However, the induced structural defects hamper lithiation of the Si/Ge core/shell nanowire heterostructure.

  10. Stabilized thin film heterostructure for electrochemical applications

    DEFF Research Database (Denmark)

    2015-01-01

    The invention provides a method for the formation of a thin film multi-layered heterostructure upon a substrate, said method comprising the steps of: a. providing a substrate; b. depositing a buffer layer upon said substrate, said buffer layer being a layer of stable ionic conductor (B); c...... or less; and e. repeating steps b. and c. a total of N times, such that N repeating pairs of layers (A/B) are built up, wherein N is 1 or more. The invention also provides a thin film multi-layered heterostructure as such, and the combination of a thin film multi-layered heterostructure and a substrate...

  11. Technology computer aided design for Si, SiGe and GaAs integrated circuits

    CERN Document Server

    Armstrong, GA

    2007-01-01

    The first book to deal with a broad spectrum of process and device design, and modelling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Examples for types of Si-, SiGe-, GaAs- and InP-based heterostructure MOS and bipolar transistors are compared with experimental data from state-of-the-art devices. With various aspects of silicon heterostructures, this book presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and-

  12. SiGe nano-heteroepitaxy on Si and SiGe nano-pillars.

    Science.gov (United States)

    Mastari, Marouane; Charles, Matthew; Bogumilowicz, Yann; Thai, Quang Minh; Pimenta Barros, Patricia; Argoud, Maxime; Papon, Anne-Marie; Gergaud, Patrice; Landru, Didier; Kim, Youngpil; Hartmann, Jean Michel

    2018-04-12

    In this paper, SiGe nano-heteroepitaxy on Si and SiGe nano-pillars was investigated in a 300 mm industrial Reduced Pressure-Chemical Vapour Deposition tool. An integration scheme based on diblock copolymer patterning was used to fabricate nanometer-sized templates for the epitaxy of Si and SiGe nano-pillars. Results showed highly selective and uniform processes for the epitaxial growth of Si and SiGe nano-pillars. 200 nm thick SiGe layers were grown on Si and SiGe nano-pillars and characterized by AFM, XRD and TEM. Smooth SiGe surfaces and full strain relaxation were obtained in the 650-700°C range for 2D SiGe layers grown either on Si or SiGe nano-pillars. © 2018 IOP Publishing Ltd.

  13. Heterostructure infrared photovoltaic detectors

    Science.gov (United States)

    Rogalski, Antoni

    2000-08-01

    HgCdTe remains the most important material for infrared (IR) photodetectors despite numerous attempts to replace it with alternative materials such as closely related mercury alloys (HgZnTe, HgMnTe), Schottky barriers on silicon, SiGe heterojunctions, GaAs/AlGaAs multiple quantum wells, InAs/GaInSb strained layer superlattices, high temperature superconductors and especially two types of thermal detectors: pyroelectric detectors and silicon bolometers. It is interesting, however, that none of these competitors can compete in terms of fundamental properties. In addition, HgCdTe exhibits nearly constant lattice parameter which is of extreme importance for new devices based on complex heterostructures. The development of sophisticated controllable vapour phase epitaxial growth methods, such as MBE and MOCVD, has allowed fabrication of almost ideally designed heterojunction photodiodes. In this paper, examples of novel devices based on heterostructures operating in the long wavelength, middle wavelength and short wavelength spectral ranges are presented. Recently, more interest has been focused on p-n junction heterostructures. As infrared technology continues to advance, there is a growing demand for multispectral detectors for advanced IR systems with better target discrimination and identification. HgCdTe heterojunction detectors offer wavelength flexibility from medium wavelength to very long wavelength and multicolour capability in these regions. Recent progress in two-colour HgCdTe detectors is also reviewed.

  14. Serial and parallel Si, Ge, and SiGe direct-write with scanning probes and conducting stamps

    Energy Technology Data Exchange (ETDEWEB)

    Vasko, Stephanie E.; Kapetanovic, Adnan; Talla, Vamsi; Brasino, Michael D.; Zhu, Zihua; Scholl, Andreas; Torrey, Jessica D.; Rolandi, Marco

    2011-05-16

    Precise materials integration in nanostructures is fundamental for future electronic and photonic devices. We demonstrate Si, Ge, and SiGe nanostructure direct-write with deterministic size, geometry, and placement control. The biased probe of an atomic force microscope (AFM) reacts diphenylsilane or diphenylgermane to direct-write carbon-free Si, Ge, and SiGe nano and heterostructures. Parallel directwrite is available on large areas by substituting the AFM probe with conducting microstructured stamps. This facile strategy can be easily expanded to a broad variety of semiconductor materials through precursor selection.

  15. High Power SiGe X-Band (8-10 GHz) Heterojunction Bipolar Transistors and Amplifiers

    Science.gov (United States)

    Ma, Zhenqiang; Jiang, Ningyue; Ponchak, George E.; Alterovitz, Samuel A.

    2005-01-01

    Limited by increased parasitics and thermal effects as the device size becomes large, current commercial SiGe power HBTs are difficult to operate at X-band (8-12 GHz) with adequate power added efficiencies at high power levels. We found that, by changing the heterostructure and doping profile of SiGe HBTs, their power gain can be significantly improved without resorting to substantial lateral scaling. Furthermore, employing a common-base configuration with proper doping profile instead of a common-emitter configuration improves the power gain characteristics of SiGe HBTs, which thus permits these devices to be efficiently operated at X-band. In this paper, we report the results of SiGe power HBTs and MMIC power amplifiers operating at 8-10 GHz. At 10 GHz, 22.5 dBm (178 mW) RF output power with concurrent gain of 7.32 dB is measured at the peak power-added efficiency of 20.0% and the maximum RF output power of 24.0 dBm (250 mW) is achieved from a 20 emitter finger SiGe power HBT. Demonstration of single-stage X-band medium-power linear MMIC power amplifier is also realized at 8 GHz. Employing a 10-emitter finger SiGe HBT and on-chip input and output matching passive components, a linear gain of 9.7 dB, a maximum output power of 23.4 dBm and peak power added efficiency of 16% is achieved from the power amplifier. The MMIC exhibits very low distortion with third order intermodulation (IM) suppression C/I of -13 dBc at output power of 21.2 dBm and over 20dBm third order output intercept point (OIP3).

  16. An Investigation of ELDRS in Different SiGe Processes

    Science.gov (United States)

    Li, Pei; He, Chaohui; Guo, Hongxia; Guo, Qi; Zhang, Jinxin; Liu, Mohan

    2017-05-01

    Enhanced low dose rate sensitivity (ELDRS) in different process Silicon-Germanium heterojunction bipolar transistors (SiGe HBTs) is investigated. Low and high dose rate irradiations are performed to evaluate the ELDRS of SiGe HBTs manufactured by Tsinghua University (THU). THU SiGe HBTs experience significantly low dose rate sensitivity than that of IBM 8HP SiGe HBTs and behave a “true” dose rate effect. TCAD models were used to explicate the microcosmic structure in THU and IBM 8HP SiGe HBTs. Comparison and discussion show that different SiGe processes may involve different HBT structures and device designs which are the critical influence of ELDRS effect. The different responses of ELDRS should be first attributed to the device structure and design in nature, particularly the geometry of emitter-base junction and the isolation structure.

  17. Silicon-germanium nanowire tunnel-FETs with homo- and heterostructure tunnel junctions

    Science.gov (United States)

    Richter, S.; Blaeser, S.; Knoll, L.; Trellenkamp, S.; Fox, A.; Schäfer, A.; Hartmann, J. M.; Zhao, Q. T.; Mantl, S.

    2014-08-01

    Experimental results on tunneling field-effect transistors (TFETs) based on strained SiGe on SOI nanowire arrays are presented. A heterostructure SiGe/Si TFET with a vertical tunnel junction consisting of an in situ doped SiGe source and a Si channel with a minimum inverse subthreshold slope of 90 mV/dec is demonstrated. An increase in tunneling area results in higher on-current. The in situ doped heterojunction TFET shows great improvement compared to a homojunction SiGe on SOI nanowire design with implanted junctions. Temperature dependent measurements and device simulations are performed in order to analyze the tunnel transport mechanism in the devices.

  18. Solvent Vapor Growth of Axial Heterostructure Nanowires with Multiple Alternating Segments of Silicon and Germanium.

    Science.gov (United States)

    Flynn, Grace; Ramasse, Quentin M; Ryan, Kevin M

    2016-01-13

    Herein, we report the formation of multisegment Si-Ge axial heterostructure nanowires in a wet chemical synthetic approach. These nanowires are grown by the liquid injection of the respective silicon and germanium precursors into the vapor phase of an organic solvent in which a tin-coated stainless steel substrate is placed. The Si-Ge transition is obtained by sequential injection with the more difficult Ge-Si transition enabled by inclusion of a quench sequence in the reaction. This approach allows for alternating between pure Si and pure Ge segments along the entire nanowire length with good control of the respective segment dimensions. The multisegment heterostructure nanowires presented are Ge-Si, Si-Ge-Si, Ge-Si-Ge, Si-Ge-Si-Ge, and Si-Ge-Si-Ge-Si-Ge. The interfacial abruptness of the Ge to Si interface is also determined through the use of aberration corrected scanning transmission electron microscopy and electron energy loss spectroscopy.

  19. Synthesis, fabrication and characterization of Ge/Si axial nanowire heterostructure tunnel FETs

    Energy Technology Data Exchange (ETDEWEB)

    Picraux, Samuel T [Los Alamos National Laboratory; Dayeh, Shadi A [Los Alamos National Laboratory

    2010-01-01

    Axial Ge/Si heterostructure nanowires allow energy band-edge engineering along the axis of the nanowire, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two advances in the area of heterostructure nanowires and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure nanowires with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these nanowires for high-on currents and suppressed ambipolar behavior. Initial prototype devices resulted in a current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. These results demonstrate the potential of such asymmetric heterostructures (both in the semiconductor channel and metal-semiconductor barrier heights) for low-power and high performance electronics.

  20. Axial Ge/Si nanowire heterostructure tunnel FETs

    Energy Technology Data Exchange (ETDEWEB)

    Picraux, Sanuel T [Los Alamos National Laboratory; Daych, Shadi A [Los Alamos National Laboratory

    2010-01-01

    The vapor-liquid-solid (VLS) growth of semiconductor nanowires allows doping and composition modulation along their axis and the realization of axial 1 D heterostructures. This provides additional flexibility in energy band-edge engineering along the transport direction which is difficult to attain by planar materials growth and processing techniques. We report here on the design, growth, fabrication, and characterization of asymmetric heterostructure tunnel field-effect transistors (HTFETs) based on 100% compositionally modulated Si/Ge axial NWs for high on-current operation and low ambipolar transport behavior. We discuss the optimization of band-offsets and Schottky barrier heights for high performance HTFETs and issues surrounding their experimental realization. Our HTFET devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a measured current drive exceeding 100 {mu}A/{mu}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios.

  1. Organic heterostructures deposited by MAPLE on AZO substrate

    Science.gov (United States)

    Socol, M.; Preda, N.; Stanculescu, A.; Breazu, C.; Florica, C.; Stanculescu, F.; Iftimie, S.; Girtan, M.; Popescu-Pelin, G.; Socol, G.

    2017-09-01

    Organic heterostructures based on poly(3-hexylthiophene) (P3HT) and fullerene (C60) as blends or multilayer were deposited on Al:ZnO (AZO) by Matrix-Assisted Pulsed Laser Evaporation (MAPLE) technique. The AZO layers were obtained by Pulsed Laser Deposition (PLD) on glass substrate, the high quality of the films being reflected by the calculated figure of merit. The organic heterostructures were investigated from morphological, optical and electrical point of view by atomic force microscopy (AFM), UV-vis spectroscopy, photoluminescence (PL) and current-voltage (I-V) measurements, respectively. The increase of the C60 content in the blend heterostructure has as result a high roughness. Compared with the multilayer heterostructure, those based on blends present an improvement in the electrical properties. Under illumination, the highest current value was recorded for the heterostructure based on the blend with the higher C60 amount. The obtained results showed that MAPLE is a useful technique for the deposition of the organic heterostructures on AZO as transparent conductor electrode.

  2. Controlled drive-in and precipitation of hydrogen during plasma hydrogenation of silicon using a thin compressively strained SiGe layer

    International Nuclear Information System (INIS)

    Okba, F.; Cherkashin, N.; Claverie, A.; Di, Z.; Nastasi, M.; Rossi, F.; Merabet, A.

    2010-01-01

    We have quantitatively studied by transmission electron microscopy the growth kinetics of platelets formed during the continuous hydrogenation of a Si substrate/SiGe/Si heterostructure. We have evidenced and explained the massive transfer of hydrogen from a population of platelets initially generated in the upper Si layer by plasma hydrogenation towards a population of larger platelets located in the SiGe layer. We demonstrate that this type of process can be used not only to precisely localize the micro-cracks, then the fracture line at a given depth but also to 'clean' the top layer from pre-existing defects.

  3. Band structure analysis in SiGe nanowires

    International Nuclear Information System (INIS)

    Amato, Michele; Palummo, Maurizia; Ossicini, Stefano

    2012-01-01

    One of the main challenges for Silicon-Germanium nanowires (SiGe NWs) electronics is the possibility to modulate and engine their electronic properties in an easy way, in order to obtain a material with the desired electronic features. Diameter and composition constitute two crucial ways for the modification of the band gap and of the band structure of SiGe NWs. Within the framework of density functional theory we present results of ab initio calculations regarding the band structure dependence of SiGe NWs on diameter and composition. We point out the main differences with respect to the case of pure Si and Ge wires and we discuss the particular features of SiGe NWs that are useful for future technological applications.

  4. Band structure analysis in SiGe nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Amato, Michele [' Centro S3' , CNR-Istituto Nanoscienze, via Campi 213/A, 41100 Modena (Italy); Dipartimento di Scienze e Metodi dell' Ingegneria, Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy); Palummo, Maurizia [European Theoretical Spectroscopy Facility (ETSF) (Italy); CNR-INFM-SMC, Dipartimento di Fisica, Universita di Roma, ' Tor Vergata' , via della Ricerca Scientifica 1, 00133 Roma (Italy); Ossicini, Stefano, E-mail: stefano.ossicini@unimore.it [' Centro S3' , CNR-Istituto Nanoscienze, via Campi 213/A, 41100 Modena (Italy) and Dipartimento di Scienze e Metodi dell' Ingegneria, Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy) and European Theoretical Spectroscopy Facility - ETSF (Italy) and Centro Interdipartimentale ' En and Tech' , Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy)

    2012-06-05

    One of the main challenges for Silicon-Germanium nanowires (SiGe NWs) electronics is the possibility to modulate and engine their electronic properties in an easy way, in order to obtain a material with the desired electronic features. Diameter and composition constitute two crucial ways for the modification of the band gap and of the band structure of SiGe NWs. Within the framework of density functional theory we present results of ab initio calculations regarding the band structure dependence of SiGe NWs on diameter and composition. We point out the main differences with respect to the case of pure Si and Ge wires and we discuss the particular features of SiGe NWs that are useful for future technological applications.

  5. High Temperature Stable Nanocrystalline SiGe Thermoelectric Material

    Science.gov (United States)

    Yang, Sherwin (Inventor); Matejczyk, Daniel Edward (Inventor); Determan, William (Inventor)

    2013-01-01

    A method of forming a nanocomposite thermoelectric material having microstructural stability at temperatures greater than 1000 C. The method includes creating nanocrystalline powder by cryomilling. The method is particularly useful in forming SiGe alloy powder.

  6. Applications of Si/SiGe heterostructures to CMOS devices

    International Nuclear Information System (INIS)

    Sidek, R.M.

    1999-03-01

    For more than two decades, advances in MOSFETs used in CMOS VLSI applications have been made through scaling to ever smaller dimensions for higher packing density, faster circuit speed and lower power dissipation. As scaling now approaches nanometer regime, the challenge for further scaling becomes greater in terms of technology as well as device reliability. This work presents an alternative approach whereby non-selectively grown Si/SiGe heterostructure system is used to improve device performance or to relax the technological challenge. SiGe is considered to be of great potential because of its promising properties and its compatibility with Si, the present mainstream material in microelectronics. The advantages of introducing strained SiGe in CMOS technology are examined through two types of device structure. A novel structure has been fabricated in which strained SiGe is incorporated in the source/drain of P-MOSFETs. Several advantages of the Si/SiGe source/drain P-MOSFETs over Si devices are experimentally, demonstrated for the first time. These include reduction in off-state leakage and punchthrough susceptibility, degradation of parasitic bipolar transistor (PBT) action, suppression of CMOS latchup and suppression of PBT-induced breakdown. The improvements due to the Si/SiGe heterojunction are supported by numerical simulations. The second device structure makes use of Si/SiGe heterostructure as a buried channel to enhance the hole mobility of P-MOSFETs. The increase in the hole mobility will benefit the circuit speed and device packing density. Novel fabrication processes have been developed to integrate non-selective Si/SiGe MBE layers into self-aligned PMOS and CMOS processes based on Si substrate. Low temperature processes have been employed including the use of low-pressure chemical vapor deposition oxide and plasma anodic oxide. Low field mobilities, μ 0 are extracted from the transfer characteristics, Id-Vg of SiGe channel P-MOSFETs with various Ge

  7. Efficient tunable luminescence of SiGe alloy sheet polymers

    International Nuclear Information System (INIS)

    Vogg, G.; Meyer, A. J.-P.; Miesner, C.; Brandt, M. S.; Stutzmann, M.

    2001-01-01

    Crystalline SiGe alloy sheet polymers were topotactically prepared from epitaxially grown calcium germanosilicide Ca(Si 1-x Ge x ) 2 precursor films in the whole composition range. These polygermanosilynes are found to be a well-defined mixture of the known siloxene and polygermyne sheet polymers with the OH groups exclusively bonded to silicon. The optical properties determined by photoluminescence and optical reflection measurements identify the mixed SiGe sheet polymers as direct semiconductors with efficient luminescence tunable in the energy range between 2.4 and 1.3 eV. [copyright] 2001 American Institute of Physics

  8. Substrate Effects in Wideband SiGe HBT Mixer Circuits

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Vidkjær, Jens; Krozer, Viktor

    2005-01-01

    In this paper, the influence from substrate effects on the performance of wideband SiGe HBT mixer circuits is investigated. Equivalent circuit models including substrate networks are extracted from on-wafer test structures and compared with electromagnetic simulations. Electromagnetic simulations...

  9. Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: their impact on SiGe light emission

    Science.gov (United States)

    Lockwood, David; Wu, Xiaohua; Baribeau, Jean-Marc; Mala, Selina; Wang, Xialou; Tsybeskov, Leonid

    2016-03-01

    Fast optical interconnects together with an associated light emitter that are both compatible with conventional Si-based complementary metal-oxide- semiconductor (CMOS) integrated circuit technology is an unavoidable requirement for the next-generation microprocessors and computers. Self-assembled Si/Si1-xGex nanostructures, which can emit light at wavelengths within the important optical communication wavelength range of 1.3 - 1.55 μm, are already compatible with standard CMOS practices. However, the expected long carrier radiative lifetimes observed to date in Si and Si/Si1-xGex nanostructures have prevented the attainment of efficient light-emitting devices including the desired lasers. Thus, the engineering of Si/Si1-xGex heterostructures having a controlled composition and sharp interfaces is crucial for producing the requisite fast and efficient photoluminescence (PL) at energies in the range 0.8-0.9 eV. In this paper we assess how the nature of the interfaces between SiGe nanostructures and Si in heterostructures strongly affects carrier mobility and recombination for physical confinement in three dimensions (corresponding to the case of quantum dots), two dimensions (corresponding to quantum wires), and one dimension (corresponding to quantum wells). The interface sharpness is influenced by many factors such as growth conditions, strain, and thermal processing, which in practice can make it difficult to attain the ideal structures required. This is certainly the case for nanostructure confinement in one dimension. However, we demonstrate that axial Si/Ge nanowire (NW) heterojunctions (HJs) with a Si/Ge NW diameter in the range 50 - 120 nm produce a clear PL signal associated with band-to-band electron-hole recombination at the NW HJ that is attributed to a specific interfacial SiGe alloy composition. For three-dimensional confinement, the experiments outlined here show that two quite different Si1-xGex nanostructures incorporated into a Si0.6Ge0.4 wavy

  10. RBS characterization of the deposition of very thin SiGe/SiO2 multilayers by LPCVD

    International Nuclear Information System (INIS)

    Munoz-Martin, A.; Climent-Font, A.; Rodriguez, A.; Sangrador, J.; Rodriguez, T.

    2005-01-01

    Multilayer structures consisting of several alternated layers of SiGe and SiO 2 with thickness ranging from 2 or Si as well as the deposition of SiO 2 on Si show negligible incubation times. The deposition of SiO 2 on SiGe, however, exhibits an incubation time of several minutes, which would be related to the oxidation of the surface necessary for the SiO 2 deposition to start. In all cases the film thickness increases linearly with deposition time, thus allowing the growth rates to be determined. These data allow the deposition process of these very thin layers to be accurately controlled

  11. Heterostructures and quantum devices

    CERN Document Server

    Einspruch, Norman G

    1994-01-01

    Heterostructure and quantum-mechanical devices promise significant improvement in the performance of electronic and optoelectronic integrated circuits (ICs). Though these devices are the subject of a vigorous research effort, the current literature is often either highly technical or narrowly focused. This book presents heterostructure and quantum devices to the nonspecialist, especially electrical engineers working with high-performance semiconductor devices. It focuses on a broad base of technical applications using semiconductor physics theory to develop the next generation of electrical en

  12. Atomically abrupt silicon-germanium axial heterostructure nanowires synthesized in a solvent vapor growth system.

    Science.gov (United States)

    Geaney, Hugh; Mullane, Emma; Ramasse, Quentin M; Ryan, Kevin M

    2013-04-10

    The growth of Si/Ge axial heterostructure nanowires in high yield using a versatile wet chemical approach is reported. Heterostructure growth is achieved using the vapor zone of a high boiling point solvent as a reaction medium with an evaporated tin layer as the catalyst. The low solubility of Si and Ge within the Sn catalyst allows the formation of extremely abrupt heterojunctions of the order of just 1-2 atomic planes between the Si and Ge nanowire segments. The compositional abruptness was confirmed using aberration corrected scanning transmission electron microscopy and atomic level electron energy loss spectroscopy. Additional analysis focused on the role of crystallographic defects in determining interfacial abruptness and the preferential incorporation of metal catalyst atoms near twin defects in the nanowires.

  13. Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2015-11-01

    Full Text Available In this paper, we demonstrated the shallow NiSiGe Schottky junction on the SiGe P-channel by using low-temperature microwave annealing. The NiSiGe/n-Si Schottky junction was formed for the Si-capped/SiGe multi-layer structure on an n-Si substrate (Si/Si0.57Ge0.43/Si through microwave annealing (MWA ranging from 200 to 470 °C for 150 s in N2 ambient. MWA has the advantage of being diffusion-less during activation, having a low-temperature process, have a lower junction leakage current, and having low sheet resistance (Rs and contact resistivity. In our study, a 20 nm NiSiGe Schottky junction was formed by TEM and XRD analysis at MWA 390 °C. The NiSiGe/n-Si Schottky junction exhibits the highest forward/reverse current (ION/IOFF ratio of ~3 × 105. The low temperature MWA is a very promising thermal process technology for NiSiGe Schottky junction manufacturing.

  14. Graphene encapsulated gold nanoparticle-quantum dot heterostructures and their electrochemical characterization

    Science.gov (United States)

    Li, Yuan; Chopra, Nitin

    2015-07-01

    A simple technique for patterning multilayer graphene shell encapsulated gold nanoparticles (GNPs) on the silicon substrate and their further surface decoration with semiconducting quantum dots (QDs) is reported. This leads to the fabrication of a novel silicon electrode decorated with GNP-QD hybrids or heterostructures. The morphology, structure, and composition of the GNPs and GNP-QD heterostructures were evaluated using microscopic and spectroscopic techniques. The heterostructures decorated silicon electrode was also evaluated for the electronic and electrochemical properties. The results showed that the electrical characteristics of the silicon substrate were significantly improved by decorating with GNPs and quantum dots. Furthermore, GNP-QD heterostructure electrode was observed to show significantly increased electrochemical charge transfer activity.

  15. Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

    KAUST Repository

    Zhang, Bo

    2018-04-14

    The thermal stability and contact resistance of TaAlN thin films as electrical contacts to SiGe thermoelectric elements are reported. We demonstrate that a sharp interface is maintained after the device annealed at 800°C for over 100h, indicating that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising contact material for high temperature thermoelectrics such as SiGe.

  16. The reliability studies of nano-engineered SiGe HBTs using Pelletron accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, A. P. Gnana, E-mail: gnanaprakash@physics.uni-mysore.ac.in; Praveen, K. C. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore, Karnataka-570006 (India); Pushpa, N. [Department of PG Studies in Physics, JSS College, Ooty Road, Mysore-570025 (India); Cressler, John D. [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332 (United States)

    2015-05-15

    The effects of high energy ions on the electrical characteristics of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were studied in the total dose of ranging from 600 krad to 100 Mrad (Si). The two generations (50 GHz and 200 GHz) of SiGe HBTs were exposed to 50 MeV lithium, 75 MeV boron and 100 MeV oxygen ions. The electrical characteristics of SiGe HBTs were studied before and after irradiation. The SiGe HBTs were exposed to {sup 60}Co gamma radiation in the same total dose. The results are systematically compared in order to understand the interaction of ions and ionizing radiation with SiGe HBTs.

  17. The reliability studies of nano-engineered SiGe HBTs using Pelletron accelerator

    Science.gov (United States)

    Prakash, A. P. Gnana; Praveen, K. C.; Pushpa, N.; Cressler, John D.

    2015-05-01

    The effects of high energy ions on the electrical characteristics of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were studied in the total dose of ranging from 600 krad to 100 Mrad (Si). The two generations (50 GHz and 200 GHz) of SiGe HBTs were exposed to 50 MeV lithium, 75 MeV boron and 100 MeV oxygen ions. The electrical characteristics of SiGe HBTs were studied before and after irradiation. The SiGe HBTs were exposed to 60Co gamma radiation in the same total dose. The results are systematically compared in order to understand the interaction of ions and ionizing radiation with SiGe HBTs.

  18. Investigating ESD sensitivity in electrostatic SiGe MEMS

    International Nuclear Information System (INIS)

    Sangameswaran, Sandeep; De Coster, Jeroen; Linten, Dimitri; Scholz, Mirko; Thijs, Steven; Groeseneken, Guido; De Wolf, Ingrid

    2010-01-01

    The sensitivity of electrostatically actuated SiGe microelectromechanical systems to electrostatic discharge events has been investigated in this paper. Torsional micromirrors and RF microelectromechanical systems (MEMS) actuators have been used as two case studies to perform this study. On-wafer electrostatic discharge (ESD) measurement methods, such as the human body model (HBM) and machine model (MM), are discussed. The impact of HBM ESD zap tests on the functionality and behavior of MEMS is explained and the ESD failure levels of MEMS have been verified by failure analysis. It is demonstrated that electrostatic MEMS devices have a high sensitivity to ESD and that it is essential to protect them.

  19. Si, Ge and SiGe wires for sensor application

    International Nuclear Information System (INIS)

    Druzhinin, A.A.; Khoverko, Yu.M.; Ostrovskii, I.P.; Nichkalo, S.I.; Nikolaeva, A.A.; Konopko, L.A.; Stich, I.

    2011-01-01

    Resistance and magnetoresistance of Si, Ge and Si-Ge micro- and nanowires were studied in temperature range 4,2-300 K at magnetic fields up to 14 T. The wires diameters range from 200 nm to 20 μm. Ga-In gates were created to wires and ohmic I-U characteristics were observed in all temperature range. It was found high elastic strain for Ge nanowires (of about 0,7%) as well as high magnitude of magnetoresistance (of about 250% at 14 T), which was used to design multifunctional sensor of simultaneous measurements of strain and magnetic field intensity. (authors)

  20. Phosphorus atomic layer doping in SiGe using reduced pressure chemical vapor deposition

    International Nuclear Information System (INIS)

    Yamamoto, Yuji; Heinemann, Bernd; Murota, Junichi; Tillack, Bernd

    2014-01-01

    Phosphorus (P) atomic layer doping in SiGe is investigated at temperatures between 100 °C to 600 °C using a single wafer reduced pressure chemical vapor deposition system. SiGe(100) surface is exposed to PH 3 at different PH 3 partial pressures by interrupting SiGe growth. The impact of the SiGe buffer/cap growth condition (total pressure/SiGe deposition precursors) on P adsorption, incorporation, and segregation are investigated. In the case of SiH 4 -GeH 4 -H 2 gas system, steeper P spikes due to lower segregation are observed by SiGe cap deposition at atmospheric (ATM) pressure compared with reduced pressure (RP). The steepness of P spike of ∼ 5.7 nm/dec is obtained for ATM pressure without reducing deposition temperature. This result may be due to the shift of equilibrium of P adsorption/desorption to desorption direction by higher H 2 pressure. Using Si 2 H 6 -GeH 4 -H 2 gas system for SiGe cap deposition in RP, lowering the SiGe growth temperature is possible, resulting in higher P incorporation and steeper P profile due to reduced desorption and segregation. In the case of Si 2 H 6 -GeH 4 -H 2 gas system, the P dose could be simulated assuming a Langmuir-type kinetics model. Incorporated P shows high electrical activity, indicating P is adsorbed mostly in lattice position. - Highlights: • Phosphorus (P) atomic layer doping in SiGe (100) is investigated using CVD. • P adsorption is suppressed by the hydrogen termination of Ge surface. • By SiGe cap deposition at atmospheric pressure, P segregation was suppressed. • By using Si 2 H 6 -based SiGe cap, P segregation was also suppressed. • The P adsorption process is self-limited and follows Langmuir-type kinetics model

  1. Structural characterisation of silicon-germanium virtual substrate- based heterostructures grown by low pressure chemical vapour deposition

    CERN Document Server

    Mihai-Dilliway, G D

    2002-01-01

    Silicon-germanium heterostructures incorporating compositionally graded virtual substrates are important for the fabrication of a variety of advanced electronic devices. Their successful application depends critically on their surface morphology and defect content. The aim of this research project is to characterise the way in which these structural properties are influenced by the growth parameters used in low pressure chemical vapour deposition (LPCVD) at the Southampton University Microelectronics Centre (SUMC). To this end, a comparative study of the surface quality and the distribution and density of misfit strain relaxation induced defects in SiGe virtual substrate-based heterostructures grown under varying conditions, was carried out. The growth parameters varied have been: growth temperature, initial and final Ge content, Ge concentration gradient, type of Ge grading profile (linear and stepwise) in the virtual substrate, and thickness and presence of a device structure in the capping layer of constan...

  2. Templated self-assembly of SiGe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Dais, Christian

    2009-08-19

    This PhD thesis reports on the fabrication and characterization of exact aligned SiGe quantum dot structures. In general, SiGe quantum dots which nucleate via the Stranski-Krastanov growth mode exhibit broad size dispersion and nucleate randomly on the surface. However, to tap the full potential of SiGe quantum dots it is necessary to control the positioning and size of the dots on a nanometer length, e.g. for electronically addressing of individual dots. This can be realized by so-called templated self-assembly, which combines top-down lithography with bottom-up selfassembly. In this process the lithographically defined pits serve as pre-defined nucleation points for the epitaxially grown quantum dots. In this thesis, extreme ultraviolet interference lithography at a wavelength of e=13.4 nm is employed for prepatterning of the Si substrates. This technique allows the precise and fast fabrication of high-resolution templates with a high degree of reproducibility. The subsequent epitaxial deposition is either performed by molecular beam epitaxy or low-pressure chemical vapour deposition. It is shown that the dot nucleation on pre-patterned substrates depends strongly on the lithography parameters, e.g. size and periodicity of the pits, as well as on the epitaxy parameters, e.g. growth temperature or material coverage. The interrelations are carefully analyzed by means of scanning force microscopy, transmission electron microscopy and X-ray diffraction measurements. Provided that correct template and overgrowth parameters are chosen, perfectly aligned and uniform SiGe quantum dot arrays of different period, size as well as symmetry are created. In particular, the quantum dot arrays with the so far smallest period (35 nm) and smallest size dispersion are fabricated in this thesis. Furthermore, the strain fields of the underlying quantum dots allow the fabrication of vertically aligned quantum dot stacks. Combining lateral and vertical dot alignment results in three

  3. Conversion Matrix Analysis of SiGe HBT Gilbert Cell Mixers

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Vidkjær, Jens; Krozer, Viktor

    2004-01-01

    The frequency response of SiGe HBT active mixers based on the Gilbert cell topology is analyzed theoretically. The time-varying operation of the Gilbert cell mixer is taken into account by applying conversion matrix analysis. The main bandwidth limiting mechanisms experienced in SiGe HBT Gilbert...... cell mixers performing frequency conversion of ultra-wideband signals is discussed. The analysis is verified by computer simulations using a realistic high-frequency large-signal SiGe HBT model. Design optimization steps towards ultra-wideband operation for Gilbert cell mixers is discussed....

  4. Fabrication of SiGe/Ge core-shell nanowires by oxidation of SiGe

    OpenAIRE

    Kløw, Frode

    2011-01-01

    As Si technology is reaching its limits in solar cell and transistor applications, ways to improve these devices are being investigated. This study looks at the fabrication process of SiGe/Ge core-shell nanowires (NWs). Larger SiGe column structures can be oxidized to reduce their size and create a SiGe/Ge core-shell structure with a layer of SiO2 on the outside. Initially, SiGe dry oxidation was investigated in epitaxially grown SiGe films with 15% and 20% Ge, focusing on the Ge pileup r...

  5. Synthesizing Weyl semimetals in weak topological insulator and topological crystalline insulator multilayers

    NARCIS (Netherlands)

    Lau, Alexander; Ortix, Carmine

    2017-01-01

    We propose a different route to time-reversal invariant Weyl semimetals employing multilayer heterostructures comprising ordinary "trivial" insulators and nontrivial insulators with \\textit{pairs} of protected Dirac cones on the surface. We consider both the case of weak topological insualtors,

  6. IBA study of SiGe/SiO{sub 2} nanostructured multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Barradas, Nuno P., E-mail: nunoni@ctn.ist.utl.pt [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 (ao km 139,7), 2695-066 Bobadela LRS (Portugal); Laboratório de Engenharia Nuclear, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 (ao km 139,7), 2695-066 Bobadela LRS (Portugal); Alves, E. [Associação Euratom/IST, Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, Av. Rovisco Pais, 1049-001 Lisboa (Portugal); Vieira, E.M.F. [Centre of Physics and Physics Department, University of Minho, 4710-057 Braga (Portugal); Parisini, A. [CNR-IMM Sezione di Bologna, via P. Gobetti 101, 40129 Bologna (Italy); Conde, O. [Physics Department and ICEMS, University of Lisbon, 1749-016 Lisboa (Portugal); Martín-Sánchez, J. [Laser Processing Group, Instituto de Óptica, CSIC, C/Serrano 121, 28006 Madrid (Spain); Rolo, A.G. [Centre of Physics and Physics Department, University of Minho, 4710-057 Braga (Portugal); Chahboun, A. [Centre of Physics and Physics Department, University of Minho, 4710-057 Braga (Portugal); FST Tanger, Physics Department, BP 416 Tanger (Morocco); Gomes, M.J.M. [Centre of Physics and Physics Department, University of Minho, 4710-057 Braga (Portugal)

    2014-07-15

    SiGe/SiO{sub 2} multilayers with layer thickness of 5 nm were deposited with RF magnetron sputtering. The as deposited samples had well defined SiGe amorphous layers. Different annealing treatments were made to promote the formation of SiGe nanocrystals. We report an ion beam analysis study with the Rutherford backscattering and elastic recoil analysis detection techniques, in order to determine the thickness and composition of the nanolayers, and gain insight into the evolution of the roughness of the layers. The results are correlated with other structural properties of the samples, as measured with complementary techniques such as grazing incidence X-ray diffraction annular dark field scanning transmission electron microscopy and high resolution transmission electron microscopy.

  7. Electronic properties of graphene-based heterostructures

    Science.gov (United States)

    Skachkova, V. A.; Baranava, M. S.; Hvazdouski, D. C.; Stempitsky, V. R.

    2017-11-01

    Heterostructures based on graphene were investigated by using density function theory (DFT). It is found that energy gap appear in ZnS-graphene heterostructure. Heterostructures graphene-ZnO and graphene-phosphorene have almost zero-band gap. Binding energy between heterostructure layers was determined.

  8. Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector

    Science.gov (United States)

    Rahim, Alhan Farhanah Abd; Zainal Badri, Nur'Amirah; Radzali, Rosfariza; Mahmood, Ainorkhilah

    2017-11-01

    In this paper, an investigation of design and simulation of silicon germanium (SiGe) islands on silicon (Si) was presented for potential visible metal semiconductor metal (MSM) photodetector. The characterization of the performances in term of the structural, optical and electrical properties of the structures was analyzed from the simulation results. The project involves simulation using SILVACO Technology Computer Aided Design (TCAD) tools. The different structures of the silicon germanium (SiGe) island on silicon substrate were created, which were large SiGe, small SiGe, combination SiGe and bulk Ge. All the structures were tested for potential Metal Semiconductor Metal (MSM) photodetector. The extracted data such as current versus voltage characteristic, current gain and spectral response were obtained using ATLAS SILVACO tools. The performance of SiGe island structures and bulk Ge on Si substrate as (MSM) photodetector was evaluated by photo and dark current-voltage (I-V) characteristics. It was found that SiGe islands exhibited higher energy band gap compared to bulk Ge. The SiGe islands current-voltage characteristics showed improved current gain compared to bulk Ge. Specifically the enhancement of the islands gain was contributed by the enhanced photo currents and lower dark currents. The spectral responses of the SiGe islands showed peak response at 590 nm (yellow) which is at the visible wavelength. This shows the feasibility of the SiGe islands to be utilized for visible photodetections.

  9. Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector

    Directory of Open Access Journals (Sweden)

    Abd Rahim Alhan Farhanah

    2017-01-01

    Full Text Available In this paper, an investigation of design and simulation of silicon germanium (SiGe islands on silicon (Si was presented for potential visible metal semiconductor metal (MSM photodetector. The characterization of the performances in term of the structural, optical and electrical properties of the structures was analyzed from the simulation results. The project involves simulation using SILVACO Technology Computer Aided Design (TCAD tools. The different structures of the silicon germanium (SiGe island on silicon substrate were created, which were large SiGe, small SiGe, combination SiGe and bulk Ge. All the structures were tested for potential Metal Semiconductor Metal (MSM photodetector. The extracted data such as current versus voltage characteristic, current gain and spectral response were obtained using ATLAS SILVACO tools. The performance of SiGe island structures and bulk Ge on Si substrate as (MSM photodetector was evaluated by photo and dark current-voltage (I-V characteristics. It was found that SiGe islands exhibited higher energy band gap compared to bulk Ge. The SiGe islands current-voltage characteristics showed improved current gain compared to bulk Ge. Specifically the enhancement of the islands gain was contributed by the enhanced photo currents and lower dark currents. The spectral responses of the SiGe islands showed peak response at 590 nm (yellow which is at the visible wavelength. This shows the feasibility of the SiGe islands to be utilized for visible photodetections.

  10. Cryogenic ultra-low-noise SiGe transistor amplifier.

    Science.gov (United States)

    Ivanov, B I; Trgala, M; Grajcar, M; Il'ichev, E; Meyer, H-G

    2011-10-01

    An ultra-low-noise one-stage SiGe heterojunction bipolar transistor amplifier was designed for cryogenic temperatures and a frequency range of 10 kHz-100 MHz. A noise temperature T(N) ≈ 1.4 K was measured at an ambient temperature of 4.2 K at frequencies between 100 kHz and 100 MHz for a source resistance of ~50 Ω. The voltage gain of the amplifier was 25 dB at a power consumption of 720 μW. The input voltage noise spectral density of the amplifier is about 35 pV/√Hz. The low noise resistance and power consumption makes the amplifier suitable for readout of resistively shunted DC SQUID magnetometers and amplifiers.

  11. Analysis and Design of Wide-Band SiGe HBT Active Mixers

    DEFF Research Database (Denmark)

    Johansen, Tom Keinicke; Krozer, Viktor; Vidkjær, Jens

    2005-01-01

    The frequency response of SiGe HBT active mixers based on the Gilbert cell topology is analyzed theoretically. The time-varying operation of the active mixer is taken into account by applying conversion matrix analysis. The main bandwidth-limiting mechanisms experienced in SiGe HBT active mixers...... performing frequency conversion of wide-band signals is discussed. The analysis is verified by computer simulations using a realistic high-frequency large-signal SiGe HBT model. An active mixer design based on the Gilbert cell topology modified for wide-band operation using emitter degenerated...... transconductance stage and shunt feedback load stage is discussed. Experimental results are given for an active mixer implemented in a 0.8-μm 35-GHz fT SiGe HBT BiCMOS process....

  12. Production Methods of Van der Waals Heterostructures Based on Transition Metal Dichalcogenides

    Directory of Open Access Journals (Sweden)

    Haimei Qi

    2018-01-01

    Full Text Available Two dimensional (2D materials have gained significant attention since the discovery of graphene in 2004. Layered transition metal dichalcogenides (TMDs have become the focus of 2D materials in recent years due to their wide range of chemical compositions and a variety of properties. These TMDs layers can be artificially integrated with other layered materials into a monolayer (lateral or a multilayer stack (vertical heterostructures. The resulting heterostructures provide new properties and applications beyond their component 2D atomic crystals and many exciting experimental results have been reported during the past few years. In this review, we present the various synthesis methods (mechanical exfoliation, physical vapor transport, chemical vapor deposition, and molecular beam epitaxy method on van der Waals heterostructures based on different TMDs as well as an outlook for future research.

  13. Rare-earth nickelates RNiO3: thin films and heterostructures

    Science.gov (United States)

    Catalano, S.; Gibert, M.; Fowlie, J.; Íñiguez, J.; Triscone, J.-M.; Kreisel, J.

    2018-04-01

    This review stands in the larger framework of functional materials by focussing on heterostructures of rare-earth nickelates, described by the chemical formula RNiO3 where R is a trivalent rare-earth R  =  La, Pr, Nd, Sm, …, Lu. Nickelates are characterized by a rich phase diagram of structural and physical properties and serve as a benchmark for the physics of phase transitions in correlated oxides where electron–lattice coupling plays a key role. Much of the recent interest in nickelates concerns heterostructures, that is single layers of thin film, multilayers or superlattices, with the general objective of modulating their physical properties through strain control, confinement or interface effects. We will discuss the extensive studies on nickelate heterostructures as well as outline different approaches to tuning and controlling their physical properties and, finally, review application concepts for future devices.

  14. Polyelectrolyte Multilayers

    Science.gov (United States)

    Schaaf, P.; Voegel, J.-C.

    The films known as polyelectrolyte multilayers are made by alternating deposition of polyanions (negatively charged polymers) and polycations (positively charged polymers). The development of these films, invented in the 1990s [1,3], has seen a considerable burst of interest, in particular due to their many applications. Indeed, these films are used to make electroluminescent diodes [4], anti-reflecting surfaces [5], water filtering substrates [6], and substrates for the separation of chiral molecules [7]. The alternating deposition of positive and 12 negative species can also be used to make films with a mechanical strength close to that of steel [8]. Applications to biosensors and especially biomaterials are currently under investigation [9]. This is the last example discussed in the present chapter. Polyelectrolytes are charged polymers, usually soluble in an aqueous solution. When a surface, supposed negatively charged, is set in contact with a solution of polycations (positively charged polyelectrolytes), the chains will immediately interact with the surface via electrostatic interaction and adsorb onto it. Like any other polymer, polyelectrolytes do not adsorb lengthwise against the surface, but form loops and tails. This adsorption is generally irreversible, and replacing the polycation solution by the solvent (water) alone will only lead to very slight desorption. This irreversibility of adsorption results from the formation of many anchoring points with the surfaces along the long polymer chains. Even if the interaction energy between a monomer, the basic building block of the polymer, and a surface is small, the fact that a number of contact points are set up makes the overall interaction between a polymer and a surface rather strong. Furthermore, in order for a chain to desorb, all the anchor points on the surface must be broken simultaneously, and such an event is highly improbable.

  15. Future applications of heterostructures

    Science.gov (United States)

    König, Ulf

    1996-01-01

    In this review the status and future of heterostructure devices is discussed. The author concentrates on III/V and Si/SiGe. Performance and applications are folded to the data and expectations of the micro- and opto-electronic market and to the traditional Si-mainstream. New trends, i.e. the SIA-roadmap, are checked how heterodevices can fit in. Only the most attractive candidates for applications are considered, i.e. the heterobipolar-, the hetero field effect-transistors, the resonant tunnel diode and to a less extent, some optoelectronic devices. Considered figures of merit are frequencies, transconductance, noise at high and low frequencies, threshold voltage, power delay, threshold current and quantum efficiencies. It is pointed out how to optimize those by material and design. Extrapolations to the future potential of heterodevices are made, just taking the claimed scaling of lateral dimensions into consideration. Field of applications are presented, where heterodevices offer exclusive qualities, i.e. high frequency transmission and sensors, and new mixed systems. In the case of logic the trend goes to nanoscaled devices and ICs targeting nanoelectronics beyond traditional electronics. Heterostructure layers allow a vertical nanoscaling and thus give an additional degree of freedom for designing and optimation. It is an attractive challenge for scientists and engineers to solve the related technological problems like thin, low thermal budget oxides, like defect free buffer layers etc. Special attention is put on Si/SiGe, which is now on an upswing in electronics and photonics.

  16. The Role of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) in Mobile Technology Platforms

    Science.gov (United States)

    2011-09-01

    1. Comparison of transistor cutoff frequency for a Si BJT and SiGe HBT over time (1...the characteristics of a SiGe HBT, and compares how SiGe fares in the worlds of the GaAs HBT and the Si bipolar junction transistors ( BJT ). 2...supremacy of the Si BJT or field effect transistor (FET) in most applications. These properties include (1) growth of comparably large Si wafers with

  17. Axial Ge/Si nanowire heterostructure tunnel FETs.

    Energy Technology Data Exchange (ETDEWEB)

    Dayeh, Shadi A. (Los Alamos National Laboratory); Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas (Los Alamos National Laboratory)

    2010-03-01

    Axial Ge/Si heterostructure nanowires (NWs) allow energy band-edge engineering along the axis of the NW, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two significant advances in the area of heterostructure NWs and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure NWs with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these NWs for high-on currents and suppressed ambipolar behavior. Initial prototype devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a very high current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. Prior work on the synthesis of Ge/Si axial NW heterostructures through the VLS mechanism have resulted in axial Si/Si{sub 1-x}Ge{sub x} NW heterostructures with x{sub max} {approx} 0.3, and more recently 100% composition modulation was achieved with a solid growth catalyst. In this latter case, the thickness of the heterostructure cannot exceed few atomic layers due to the slow axial growth rate and concurrent radial deposition on the NW sidewalls leading to a mixture of axial and radial deposition, which imposes a big challenge for fabricating useful devices form these NWs in the near future. Here, we report the VLS growth of 100% doping and composition modulated axial Ge/Si heterostructure NWs with lengths appropriate for device fabrication by devising a growth procedure that eliminates Au diffusion on the NW sidewalls and minimizes random kinking in the heterostructure NWs as deduced from detailed microscopy analysis. Fig. 1 a shows a cross-sectional SEM image of epitaxial Ge/Si axial NW heterostructures grown on a Ge(111) surface. The interface abruptness in these Ge/Si heterostructure NWs is of the order of the NW diameter. Some of these NWs develop a crystallographic kink that is {approx

  18. Analysis of Si/SiGe Heterostructure Solar Cell

    Directory of Open Access Journals (Sweden)

    Ashish Kumar Singh

    2014-01-01

    Full Text Available Sunlight is the largest source of carbon-neutral energy. Large amount of energy, about 4.3 × 1020 J/hr (Lewis, 2005, is radiated because of nuclear fusion reaction by sun, but it is unfortunate that it is not exploited to its maximum level. Various photovoltaic researches are ongoing to find low cost, and highly efficient solar cell to fulfil looming energy crisis around the globe. Thin film solar cell along with enhanced absorption property will be the best, so combination of SiGe alloy is considered. The paper presented here consists of a numerical model of Si/Si1-xGex heterostructure solar cell. The research has investigated characteristics such as short circuit current density (Jsc, generation rate (G, absorption coefficient (α, and open circuit voltage (Voc with optimal Ge concentration. The addition of Ge content to Si layer will affect the property of material and can be calculated with the use of Vegard’s law. Due to this, short circuit current density increases.

  19. Si/Ge intermixing during Ge Stranski–Krastanov growth

    Directory of Open Access Journals (Sweden)

    Alain Portavoce

    2014-12-01

    Full Text Available The Stranski–Krastanov growth of Ge islands on Si(001 has been widely studied. The morphology changes of Ge islands during growth, from nucleation to hut/island formation and growth, followed by hut-to-dome island transformation and dislocation nucleation of domes, have been well described, even at the atomic scale, using techniques such as scanning tunneling microscopy and transmission electron microscopy. Although it is known that these islands do not consist of pure Ge (due to Si/Ge intermixing, the composition of the Ge islands is not precisely known. In the present work, atom probe tomography was used to study the composition of buried dome islands at the atomic scale, in the three-dimensional space. The core of the island was shown to contain about 55 atom % Ge, while the Ge composition surrounding this core decreases rapidly in all directions in the islands to reach a Ge concentration of about 15 atom %. The Ge distribution in the islands follows a cylindrical symmetry and Ge segregation is observed only in the {113} facets of the islands. The Ge composition of the wetting layer is not homogeneous, varying from 5 to 30 atom %.

  20. Synthesis of ultra-small Si/Ge semiconductor nano-particles using electrochemistry

    International Nuclear Information System (INIS)

    Alkis, Sabri; Ghaffari, Mohammad; Okyay, Ali Kemal

    2012-01-01

    In this paper, we describe the formation of colloidal Si/Ge semiconductor nano-particles by electrochemical etching of Ge quantum dots (GEDOT), Silicon–Germanium graded layers (GRADE) and Silicon–Germanium multi-quantum well (MQW) structures which are prepared on Silicon wafers using low pressure chemical vapor deposition (LPCVD) technique. The formation of Si/Ge nano-particles is verified by transmission electron microscope (TEM) images and photoluminescence (PL) measurements. The Si/Ge nano-particles obtained from GEDOT and GRADE structures, gave blue emissions, upon 250 nm, and 300 nm UV excitations. However, the nano-particles obtained from the MQW structure did exhibit various color emissions (orange, blue, green and red) upon excitation with 250 nm, 360 nm, 380 nm and 400 nm wavelength light. Highlights: ► Ultra-small Si/Ge nano-particles are obtained through electrochemical anodization. ► The sizes of the Si/Ge nano-particles are 1–3 nm, obtained from TEM images. ► Blue, green, yellow/orange and red emissions are observed upon UV excitation. ► Nano-particles could be used in multi-band opto-electronic device applications.

  1. Effect of ferromagnetism on superconductivity in manganite/cuprate heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Pang, B.S.H. [Device Materials Group, Department of Materials Science and Metallurgy, University of Cambridge, New Museum Site, Pembroke St., Cambridge CB2 3QZ (United Kingdom)]. E-mail: bshp2@cam.ac.uk; Tomov, R.I. [Device Materials Group, Department of Materials Science and Metallurgy, University of Cambridge, New Museum Site, Pembroke St., Cambridge CB2 3QZ (United Kingdom); Bell, C. [Device Materials Group, Department of Materials Science and Metallurgy, University of Cambridge, New Museum Site, Pembroke St., Cambridge CB2 3QZ (United Kingdom); Blamire, M.G. [Device Materials Group, Department of Materials Science and Metallurgy, University of Cambridge, New Museum Site, Pembroke St., Cambridge CB2 3QZ (United Kingdom)

    2004-10-15

    In this investigation, we deposited multilayers of [(La{sub 0.67}Sr{sub 0.33}MnO{sub 3}){sub d}/(YBa{sub 2}Cu{sub 3}O{sub y}){sub x}], [(La{sub 0.7}Ca{sub 0.3}MnO{sub 3}){sub 4}/(YBa{sub 2}Cu{sub 3}O{sub 7}){sub x}]{sub 180nm} and [(La{sub 0.45}Ca{sub 0.55}MnO{sub 3} ){sub 4}/(YBa{sub 2}Cu{sub 3}O{sub 7}){sub x}]{sub 180nm} of varying individual layer thicknesses using the 'eclipse' pulsed laser deposition technique. Transport measurements were performed to obtain the films' critical temperatures (T{sub c}). We study the interaction between superconductivity and magnetism within these heterostructures, paying attention to the superconducting and ferromagnetic coherence lengths, {xi}{sub F} and {xi}{sub S} respectively, of the materials in the system, and analyzing how these parameters affect the suppression of T{sub c}, eliminating stray field as a possible cause of T{sub c} suppression. We compared our data to previous work to achieve a more comprehensive study of oxide F/S multilayers. We observe that the magnetic nature of the manganite layers do not have much influence on T{sub c} suppression in the multilayers. We show that within certain limits, the thicknesses of both the superconducting and ferromagnetic layers individually affect the T{sub c} of the multilayers. The critical thickness of YBCO in our multilayers was estimated to be {approx}20 nm.

  2. Interface bond relaxation on the thermal conductivity of Si/Ge core-shell nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Weifeng; He, Yan; Ouyang, Gang, E-mail: gangouy@hunnu.edu.cn [Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications(SICQEA), Hunan Normal University, Changsha 410081 (China); Sun, Changqing [School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

    2016-01-15

    The thermal conductivity of Si/Ge core-shell nanowires (CSNWs) is investigated on the basis of atomic-bond-relaxation consideration and continuum mechanics. An analytical model is developed to clarify the interface bond relaxation of Si/Ge CSNWs. It is found that the thermal conductivity of Si core can be modulated through covering with Ge epitaxial layers. The change of thermal conductivity in Si/Ge CSNWs should be attributed to the surface relaxation and interface mismatch between inner Si nanowire and outer Ge epitaxial layer. Our results are in well agreement with the experimental measurements and simulations, suggesting that the presented method provides a fundamental insight of the thermal conductivity of CSNWs from the atomistic origin.

  3. Increased bioplastic production with an RNA polymerase sigma factor SigE during nitrogen starvation in Synechocystis sp. PCC 6803.

    Science.gov (United States)

    Osanai, Takashi; Numata, Keiji; Oikawa, Akira; Kuwahara, Ayuko; Iijima, Hiroko; Doi, Yoshiharu; Tanaka, Kan; Saito, Kazuki; Hirai, Masami Yokota

    2013-12-01

    Because cyanobacteria directly harvest CO2 and light energy, their carbon metabolism is important for both basic and applied sciences. Here, we show that overexpression of the sigma factor sigE in Synechocystis sp. PCC 6803 widely changes sugar catabolism and increases production of the biodegradable polyester polyhydroxybutyrate (PHB) during nitrogen starvation. sigE overexpression elevates the levels of proteins implicated in glycogen catabolism, the oxidative pentose phosphate pathway, and polyhydroxyalkanoate biosynthesis. PHB accumulation is enhanced by sigE overexpression under nitrogen-limited conditions, yet the molecular weights of PHBs synthesized by the parental glucose-tolerant and sigE overexpression strain are similar. Although gene expression induced by nitrogen starvation is changed and other metabolites (such as GDP-mannose and citrate) accumulate under sigE overexpression, genetic engineering of this sigma factor altered the metabolic pathway from glycogen to PHB during nitrogen starvation.

  4. Strained Si and SiGe tunnel-FETs and complementary tunnel-FET inverters with minimum gate lengths of 50 nm

    Science.gov (United States)

    Knoll, L.; Richter, S.; Nichau, A.; Trellenkamp, S.; Schäfer, A.; Bourdelle, K. K.; Hartmann, J. M.; Zhao, Q. T.; Mantl, S.

    2014-07-01

    In this work we experimentally demonstrate a novel method to fabricate short channel complementary planar strained Si (sSOI) TFETs with improved tunneling junctions by implantation into silicide method (IIS). For the first time we have successfully fabricated both, n- and p-type TFETs with high on-currents using ultra thin sSOI structures. We demonstrate all Si complementary TFET (C-TFET) inverters with a gain as large as 60 at VDD = 2 V and sharp transitions down to very low VDD = 0.2 V. The first transient response analysis of the NW C-TFET inverter showed a propagation delay of tp Nanowire array devices with improved electrostatic control compared to a planar device geometry with 15 nm wires were fabricated using Si1-xGex with x = 35% and x = 50% showing improved ION with increasing Ge concentration. As compared to SiGe homojunction devices, Si1-xGex/Si heterostructure NW TFETs show improved ION/IOFF ratio up to 8 orders of magnitude and reduced trap assisted tunnelling (TAT) due to in situ source doping.

  5. Thermospin effects in superconducting heterostructures

    Science.gov (United States)

    Bobkova, I. V.; Bobkov, A. M.

    2017-09-01

    Recently, thermally created pure spin currents were predicted for Zeeman-split superconductor/normal-metal heterostructures. Here it is shown that this "thermospin" current can lead to an accumulation of a pure spin imbalance in a system. The thermally induced spin imbalance can reach the value of Zeeman splitting of the superconducting density of states and strongly influences superconductivity in the heterostructure. Depending on the temperature difference between the superconductor and the normal reservoir it can enhance the critical temperature of the superconductor or additionally suppress the zero-temperature superconducting state. The last possibility gives rise to an unusual superconducting state, which starts to develop at finite temperature.

  6. Heterostructures of transition metal dichalcogenides

    KAUST Repository

    Amin, Bin

    2015-08-24

    The structural, electronic, optical, and photocatalytic properties of out-of-plane and in-plane heterostructures of transition metal dichalcogenides are investigated by (hybrid) first principles calculations. The out-of-plane heterostructures are found to be indirect band gap semiconductors with type-II band alignment. Direct band gaps can be achieved by moderate tensile strain in specific cases. The excitonic peaks show blueshifts as compared to the parent monolayer systems, whereas redshifts occur when the chalcogen atoms are exchanged along the series S-Se-Te. Strong absorption from infrared to visible light as well as excellent photocatalytic properties can be achieved.

  7. Escher-like quasiperiodic heterostructures

    International Nuclear Information System (INIS)

    Barriuso, A G; Monzon, J J; Sanchez-Soto, L L; Costa, A F

    2009-01-01

    Quasiperiodic heterostructures present unique structural, electronic and vibrational properties, connected to the existence of incommensurate periods. We go beyond previous schemes, such as Fibonacci or Thue-Morse, based on substitutional sequences, by introducing construction rules generated by tessellations of the unit disc by regular polygons. We explore some of the properties exhibited by these systems. (fast track communication)

  8. Escher-like quasiperiodic heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Barriuso, A G; Monzon, J J; Sanchez-Soto, L L [Departamento de Optica, Facultad de Fisica, Universidad Complutense, 28040 Madrid (Spain); Costa, A F [Departamento de Matematicas Fundamentales, Facultad de Ciencias, Universidad Nacional de Educacion a Distancia, Senda del Rey 9, 28040 Madrid (Spain)

    2009-05-15

    Quasiperiodic heterostructures present unique structural, electronic and vibrational properties, connected to the existence of incommensurate periods. We go beyond previous schemes, such as Fibonacci or Thue-Morse, based on substitutional sequences, by introducing construction rules generated by tessellations of the unit disc by regular polygons. We explore some of the properties exhibited by these systems. (fast track communication)

  9. De-embedding and Modelling of pnp SiGe HBTs

    DEFF Research Database (Denmark)

    Hadziabdic, Dzenan; Jiang, Chenhui; Johansen, Tom Keinicke

    2007-01-01

    In this work we present a direct parameter extraction procedure for SiGe pnp heterojunction bipolar transistor (HBT) large-signal and small-signal models. Test structure parasitics are removed from the measured small-signal parameters using an open-short de-embedding technique, improved to account...

  10. Uncertainty Estimation in SiGe HBT Small-Signal Modeling

    DEFF Research Database (Denmark)

    Masood, Syed M.; Johansen, Tom Keinicke; Vidkjær, Jens

    2005-01-01

    An uncertainty estimation and sensitivity analysis is performed on multi-step de-embedding for SiGe HBT small-signal modeling. The uncertainty estimation in combination with uncertainty model for deviation in measured S-parameters, quantifies the possible error value in de-embedded two-port param...

  11. Vertical nanowire heterojunction devices based on a clean Si/Ge interface.

    Science.gov (United States)

    Chen, Lin; Fung, Wayne Y; Lu, Wei

    2013-01-01

    Different vertical nanowire heterojunction devices were fabricated and tested based on vertical Ge nanowires grown epitaxially at low temperatures on (111) Si substrates with a sharp and clean Si/Ge interface. The nearly ideal Si/Ge heterojuctions with controlled and abrupt doping profiles were verified through material analysis and electrical characterizations. In the nSi/pGe heterojunction diode, an ideality factor of 1.16, subpicoampere reverse saturation current, and rectifying ratio of 10(6) were obtained, while the n+Si/p+Ge structure leads to Esaki tunnel diodes with a high peak tunneling current of 4.57 kA/cm(2) and negative differential resistance at room temperature. The large valence band discontinuity between the Ge and Si in the nanowire heterojunctions was further verified in the p+Si/pGe structure, which shows a rectifying behavior instead of an Ohmic contact and raises an important issue in making Ohmic contacts to heterogeneously integrated materials. A raised Si/Ge structure was further developed using a self-aligned etch process, allowing greater freedom in device design for applications such as the tunneling field-effect transistor (TFET). All measurement data can be well-explained and fitted with theoretical models with known bulk properties, suggesting that the Si/Ge nanowire system offers a very clean heterojunction interface with low defect density, and holds great potential as a platform for future high-density and high-performance electronics.

  12. SiGe quantum dot molecules grown on patterned Si (001) substrates

    International Nuclear Information System (INIS)

    Yang Hongbin; Zhang Xiangjiu; Jiang Zuiming; Yang Xinju; Fan Yongliang

    2008-01-01

    SiGe quantum dot molecules (QDMs) grown on patterned Si (001) substrates by molecular beam epitaxy were studied. Experimental results showed that the density, the dimension, and the dimension distribution of the SiGe QDMs grown in the windows were dependent on the window size. When the thickness of the Si 0.8 Ge 0.2 film was 40 nm, QDMs only appeared in the unpatterned areas of the Si substrate and none could be found inside the windows of 6x6 μm 2 on the same substrate. However, when the thickness of Si 0.8 Ge 0.2 film was increased to 80 nm, QDMs appeared both inside the windows and in the unpatterned areas, and the density of QDMs was reduced with the decrease in the window size. We attribute these results to the different strain relaxations in different size windows, which are caused by the edge effect of the epitaxial film in the window. Based on these experimental results we discuss the formation and the size stability of the QDMs and conclude that the formation of the SiGe QDM originates from an intrinsic cause of the strain relief mechanism. This work also shows that by means of the edge induced strain relaxation of the epitaxial film in the window, it is possible to reveal the influence of the strain on some physical properties of the SiGe film without changing its Ge atomic fraction

  13. A Passive X-Band Double Balanced Mixer Utilizing Diode Connected SiGe HBTs

    DEFF Research Database (Denmark)

    Michaelsen, Rasmus Schandorph; Johansen, Tom Keinicke; Tamborg, Kjeld

    2013-01-01

    In this paper, a passive double balanced mixer in SiGe HBT technology is presented. Due to lack of suitable passive mixing elements in the technology, the mixing elements are formed by diode connected HBTs. The mixer is optimized for use in doppler radars and is highly linear with 1 dB compression...... of operation....

  14. Fabrication and transport studies of graphene-superconductor heterostructures

    Science.gov (United States)

    Hu, Jiuning; Wu, Tailung; Tian, Jifa; Chen, Yong

    2014-03-01

    Recently, graphene based stacked heterostructures, e.g., graphene and boron nitride (BN) multi-layers, have attracted much attention as a system to study novel interaction-driven physics (e.g., excitonic condensation) and perform interesting measurements (eg. Coulomb drag and tunneling). The realm of graphene-superconductor heterostructures remains less unexplored, while such a system offers various interesting prospects (effects of superconductor vortices lattices on over-layering graphene and quantum Hall states, where novel phenomena such as anionic excitations have been predicted). We have used polyvinyl alcohol (PVA) based carrier films and a micro-manipulator to transfer mechanically exfoliated flakes and fabricated graphene/BN/NbSe2 structures to study the transport properties of graphene in close proximity to electrically isolated superconducting NbSe2 films. The NbSe2 film shows the superconducting transition temperature of ~7 K and upper critical field of ~3.5 T after device fabrication. We will present results from magneto-transport in graphene and graphene-NbSe2 Coulomb drag and tunneling measurements.

  15. Polarized neutron reflectivity and scattering studies of magnetic heterostructures

    Science.gov (United States)

    Zabel, H.; Theis-Bröhl, K.

    2003-02-01

    The current interest in the magnetism of ultrathin films and multilayers is driven by their manifold applications in the magneto-and spin-electronic areas, for instance as magnetic field sensors or as information storage devices. In this regard, there is a large interest in exploring spin structures and spin disorder at the interface of magnetic heterostructures, to investigate magnetic domains in thin films and superlattices, and to understand remagnetization processes of various laterally shaped magnetic nanostructures. Traditionally neutron scattering has played a dominant role in the determination of spin structures, phase transitions and magnetic excitations in bulk materials. Today, its potential for the investigation of thin magnetic films has to be redefined. Polarized neutron reflectivity (PNR) at small wavevectors can provide precise information on the magnetic field distribution parallel to the film plane and on layer resolved magnetization vectors. In addition, PNR is not only sensitive to structural interface roughness but also to the magnetic roughness. Furthermore, magnetic hysteresis measurements from polarized small angle Bragg reflections allows us to filter out correlation effects during magnetization reversals of magnetic stripes and islands. An overview is provided on most recent PNR investigations of magnetic heterostructures.

  16. Thermionic Energy Conversion Based on Graphene van der Waals Heterostructures

    Science.gov (United States)

    Liang, Shi-Jun; Liu, Bo; Hu, Wei; Zhou, Kun; Ang, L. K.

    2017-04-01

    Seeking for thermoelectric (TE) materials with high figure of merit (or ZT), which can directly converts low-grade wasted heat (400 to 500 K) into electricity, has been a big challenge. Inspired by the concept of multilayer thermionic devices, we propose and design a solid-state thermionic devices (as a power generator or a refrigerator) in using van der Waals (vdW) heterostructure sandwiched between two graphene electrodes, to achieve high energy conversion efficiency in the temperature range of 400 to 500 K. The vdW heterostructure is composed of suitable multiple layers of transition metal dichalcogenides (TMDs), such as MoS2, MoSe2, WS2 and WSe2. From our calculations, WSe2 and MoSe2 are identified as two ideal TMDs (using the reported experimental material’s properties), which can harvest waste heat at 400 K with efficiencies about 7% to 8%. To our best knowledge, this design is the first in combining the advantages of graphene electrodes and TMDs to function as a thermionic-based device.

  17. Polarized neutron reflectivity and scattering studies of magnetic heterostructures

    International Nuclear Information System (INIS)

    Zabel, H; Theis-Broehl, K

    2003-01-01

    The current interest in the magnetism of ultrathin films and multilayers is driven by their manifold applications in the magneto-and spin-electronic areas, for instance as magnetic field sensors or as information storage devices. In this regard, there is a large interest in exploring spin structures and spin disorder at the interface of magnetic heterostructures, to investigate magnetic domains in thin films and superlattices, and to understand remagnetization processes of various laterally shaped magnetic nanostructures. Traditionally neutron scattering has played a dominant role in the determination of spin structures, phase transitions and magnetic excitations in bulk materials. Today, its potential for the investigation of thin magnetic films has to be redefined. Polarized neutron reflectivity (PNR) at small wavevectors can provide precise information on the magnetic field distribution parallel to the film plane and on layer resolved magnetization vectors. In addition, PNR is not only sensitive to structural interface roughness but also to the magnetic roughness. Furthermore, magnetic hysteresis measurements from polarized small angle Bragg reflections allows us to filter out correlation effects during magnetization reversals of magnetic stripes and islands. An overview is provided on most recent PNR investigations of magnetic heterostructures

  18. Multiferroic properties of artificially designed Perovskite-Spinel Heterostructures

    Science.gov (United States)

    Dussan, Sandra; Singh, Manoj K.; Katiyar, Ram S.

    2009-03-01

    Multiferroics materials are a class of functional material that combines two or more ordered parameters i.e. ferromagnetic, ferroelectric and ferroelastic. The recent finding of multiferroic composite material with the coexistence of these properties has attracted the attention of various researchers due to its potential applications in highly sensitive sensors and actuators as well as multistate memory devices. We synthesized and characterizatied CoFe2O4-BiFeO3 (CFO-BFO) heterostructure thin films grown on SrTiO3 (111), (100) substrates using Pulsed laser deposition. The XRD patterns of CFO-BFO multilayered films evidenced that all picks correspond to CFO and BFO structure also confirmed by their respective Raman spectra. We observed three peaks at 136, 168, and 215 cm-1 that can be assigned to A1(TO) modes of the BFO pure phase and at 468 and 695 cm-1 correspond to CFO. Room temperature M-H exhibited well-shaped magnetization hysteresis loops, good saturation and high coercivity. Preliminary results evidenced the existence of ferroelectricity and magnetic properties in heterostructure.

  19. Contribution of Structure and Morphology of Design Constituents to Performance Improvement of Multilayer Polaritonic Photodetector

    Directory of Open Access Journals (Sweden)

    O. B. Yastrubchak

    2003-10-01

    Full Text Available This paper is devoted to estimate contribution of structure and morphology of the individual design constituents to performance improvement of multilayer polaritonic photodetector (optochemical sensor. Surface plasmon resonance (SPR in the surface barrier heterostructure (SBH with the corrugated interface is used as the basic principle underlying the device operation. The demonstration of correlation of the contribution with the enhanced SBH features was performed through the adequate characterization tool.

  20. SiGe Integrated Circuit Developments for SQUID/TES Readout

    Science.gov (United States)

    Prêle, D.; Voisin, F.; Beillimaz, C.; Chen, S.; Piat, M.; Goldwurm, A.; Laurent, P.

    2018-03-01

    SiGe integrated circuits dedicated to the readout of superconducting bolometer arrays for astrophysics have been developed since more than 10 years at APC. Whether for Cosmic Microwave Background (CMB) observations with the QUBIC ground-based experiment (Aumont et al. in astro-ph.IM, 2016. arXiv:1609.04372) or for the Hot and Energetic Universe science theme with the X-IFU instrument on-board of the ATHENA space mission (Barret et al. in SPIE 9905, space telescopes & instrumentation 2016: UV to γ Ray, 2016. https://doi.org/10.1117/12.2232432), several kinds of Transition Edge Sensor (TES) (Irwin and Hilton, in ENSS (ed) Cryogenic particle detection, Springer, Berlin, 2005) arrays have been investigated. To readout such superconducting detector arrays, we use time or frequency domain multiplexers (TDM, FDM) (Prêle in JINST 10:C08015, 2016. https://doi.org/10.1088/1748-0221/10/08/C08015) with Superconducting QUantum Interference Devices (SQUID). In addition to the SQUID devices, low-noise biasing and amplification are needed. These last functions can be obtained by using BiCMOS SiGe technology in an Application Specific Integrated Circuit (ASIC). ASIC technology allows integration of highly optimised circuits specifically designed for a unique application. Moreover, we could reach very low-noise and wide band amplification using SiGe bipolar transistor either at room or cryogenic temperatures (Cressler in J Phys IV 04(C6):C6-101, 1994. https://doi.org/10.1051/jp4:1994616). This paper discusses the use of SiGe integrated circuits for SQUID/TES readout and gives an update of the last developments dedicated to the QUBIC telescope and to the X-IFU instrument. Both ASIC called SQmux128 and AwaXe are described showing the interest of such SiGe technology for SQUID multiplexer controls.

  1. Multilayer Brain Networks

    Science.gov (United States)

    Vaiana, Michael; Muldoon, Sarah Feldt

    2018-01-01

    The field of neuroscience is facing an unprecedented expanse in the volume and diversity of available data. Traditionally, network models have provided key insights into the structure and function of the brain. With the advent of big data in neuroscience, both more sophisticated models capable of characterizing the increasing complexity of the data and novel methods of quantitative analysis are needed. Recently, multilayer networks, a mathematical extension of traditional networks, have gained increasing popularity in neuroscience due to their ability to capture the full information of multi-model, multi-scale, spatiotemporal data sets. Here, we review multilayer networks and their applications in neuroscience, showing how incorporating the multilayer framework into network neuroscience analysis has uncovered previously hidden features of brain networks. We specifically highlight the use of multilayer networks to model disease, structure-function relationships, network evolution, and link multi-scale data. Finally, we close with a discussion of promising new directions of multilayer network neuroscience research and propose a modified definition of multilayer networks designed to unite and clarify the use of the multilayer formalism in describing real-world systems.

  2. Graphyne-graphene (nitride) heterostructure as nanocapacitor

    Science.gov (United States)

    Bhattacharya, Barnali; Sarkar, Utpal

    2016-10-01

    A nanoscale capacitor composed of heterostructure derived from finite size graphyne flake and graphene (nitride) flake has been proposed and investigated using density functional theory (DFT). The exothermic nature of formation process of these heterostructures implies their stability. Significant charge transfer between two flakes generates permanent dipole in this heterostructures. The amount of charge transfer is tunable under the application of external electric field which enhances their applicability in electronics. We have specifically focused on the capacitive properties of different heterostructure composed of graphyne flake and graphene (nitride) flake, i.e., graphyne/graphene, graphyne/h-BN, graphyne/AlN, graphyne/GaN. The charge stored by each flake, energy storage, and capacitance are switchable under external electric field. Thus, our modeled heterostructures are a good candidate as nanoscale capacitor and can be used in nanocircuit. We found that the charge stored by each flake, energy storage, and capacitance value are highest for graphyne/GaN heterostructures.

  3. Interfacial effects in multilayers

    International Nuclear Information System (INIS)

    Barbee, T.W. Jr.

    1998-01-01

    Interfacial structure and the atomic interactions between atoms at interfaces in multilayers or nano-laminates have significant impact on the physical properties of these materials. A technique for the experimental evaluation of interfacial structure and interfacial structure effects is presented and compared to experiment. In this paper the impact of interfacial structure on the performance of x-ray, soft x-ray and extreme ultra-violet multilayer optic structures is emphasized. The paper is concluded with summary of these results and an assessment of their implications relative to multilayer development and the study of buried interfaces in solids in general

  4. Anomalous Fluorescence Enhancement from Double Heterostructure 3D Colloidal Photonic Crystals--A Multifunctional Fluorescence-Based Sensor Platform.

    Science.gov (United States)

    Eftekhari, Ehsan; Li, Xiang; Kim, Tak H; Gan, Zongsong; Cole, Ivan S; Zhao, Dongyuan; Kielpinski, Dave; Gu, Min; Li, Qin

    2015-09-24

    Augmenting fluorescence intensity is of vital importance to the development of chemical and biochemical sensing, imaging and miniature light sources. Here we report an unprecedented fluorescence enhancement with a novel architecture of multilayer three-dimensional colloidal photonic crystals self-assembled from polystyrene spheres. The new technique uses a double heterostructure, which comprises a top and a bottom layer with a periodicity overlapping the excitation wavelength (E) of the emitters, and a middle layer with a periodicity matching the fluorescence wavelength (F) and a thickness that supports constructive interference for the excitation wavelength. This E-F-E double heterostructure displays direction-dependent light trapping for both excitation and fluorescence, coupling the modes of photonic crystal with multiple-beam interference. The E-F-E double heterostructure renders an additional 5-fold enhancement to the extraordinary FL amplification of Rhodamine B in monolithic E CPhCs, and 4.3-fold acceleration of emission dynamics. Such a self-assembled double heterostructure CPhCs may find significant applications in illumination, laser, chemical/biochemical sensing, and solar energy harvesting. We further demonstrate the multi-functionality of the E-F-E double heterostructure CPhCs in Hg (II) sensing.

  5. Multilayer Social Networks

    DEFF Research Database (Denmark)

    Dickison, Mark; Magnani, Matteo; Rossi, Luca

    Multilayer networks, in particular multilayer social networks, where users belong to and interact on different networks at the same time, are an active research area in social network analysis, computer science, and physics. These networks have traditionally been studied within these separate...... research communities, leading to the development of several independent models and methods to deal with the same set of problems. This book unifies and consolidates existing practical and theoretical knowledge on multilayer networks including data collection and analysis, modeling, and mining of multilayer...... social network systems, the evolution of interconnected social networks, and dynamic processes such as information spreading. A single real dataset is used to illustrate the concepts presented throughout the book, demonstrating both the practical utility and the potential shortcomings of the various...

  6. Comparative analysis of radiation effects on the electroluminescence of Si and SiGe/Si(001) heterostructures with self-assembled Islands

    Energy Technology Data Exchange (ETDEWEB)

    Krasilnik, Z. F.; Kudryavtsev, K. E. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Kachemtsev, A. N. [Sedakov Scientific-Research Institute (Russian Federation); Lobanov, D. N., E-mail: dima@ipm.sci-nnov.ru; Novikov, A. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Obolenskiy, S. V. [Nizhni Novgorod State University (Russian Federation); Shengurov, D. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2011-02-15

    The effect of neutron radiation on the electroluminescence of the Si p-i-n diode containing a multilayered Ge/Si heterostructure with self-assembled nanoislands is studied. In comparison with bulk Si, the diodes containing Ge(Si) nanoislands exhibit a higher radiation hardness of the electroluminescence signal, which is attributed to spatial localization of charge carriers in the Ge/Si nanostructures. The spatial localization of charge carriers impedes their diffusion to radiation defects followed by nonradiative recombination at the defects. The results show the possibilities of using Ge/Si heterostructures with self-assembled nanoislands for the development of optoelectronic devices resistant to radiation.

  7. SigE Is a Chaperone for the Salmonella enterica Serovar Typhimurium Invasion Protein SigD

    OpenAIRE

    Darwin, K. Heran; Robinson, Lloyd S.; Miller, Virginia L.

    2001-01-01

    SigD is translocated into eucaryotic cells by a type III secretion system. In this work, evidence that the putative chaperone SigE directly interacts with SigD is presented. A bacterial two-hybrid system demonstrated that SigE can interact with itself and SigD. In addition, SigD was specifically copurified with SigE-His6 on a nickel column.

  8. Fabrication of high-quality strain relaxed SiGe(1 1 0) films by controlling defects via ion implantation

    Science.gov (United States)

    Kato, M.; Arimoto, K.; Yamanaka, J.; Nakagawa, K.; Sawano, K.

    2017-11-01

    We investigate effects of ion implantation on strain relaxation of SiGe(1 1 0) layers grown on Si(1 1 0) substrates. Ar+ or Si+ ion implantation is carried out before or after the SiGe growth. It is found that the strain relaxation of the SiGe(1 1 0) film is largely enhanced due to implantation-induced defects both for Ar and Si implantation. Particularly, the sample with Si implantation after the SiGe growth allows large strain relaxation and smaller surface roughness than Ar implantation. As a result, a 50-nm-thick Si0.79Ge0.21 or Si0.77Ge0.23(1 1 0) buffer layer with almost full relaxation and rms surface roughness below 0.5 nm was obtained. It is, therefore, expected that high-mobility strained Si/Ge(1 1 0) channels can be realized on the SiGe(1 1 0) relaxed buffer layers fabricated by Si implantation. It is also demonstrated that the local introduction of the implantation defects allows controlling of lateral strain states and dislocation generation, opening new concepts of engineering of both strain and surface orientation.

  9. Diffusion of $^{56}$Co in GaAs and SiGe alloys

    CERN Multimedia

    Koskelo, O K

    2007-01-01

    Following our previous diffusion studies performed with the modified radiotracer technique, we propose to determine the diffusion of cobalt in GaAs and SiGe alloys under intrinsic conditions. In the literature only three previous studies for Co diffusion in GaAs may be found and the results differ by over four orders of magnitude from each other. For Co diffusion in SiGe alloys no previous data is available in the literature. For Co diffusion in Ge one study may be found but the results have been obtained with material having increased dislocation density. For dislocation-free material no previous measurements are available. For such experiments we ask for two runs of 3 shifts (total of 6 shifts) with $^{56}$Co$^{+}$ ion beam.

  10. A SiGe BiCMOS Instrumentation Channel for Extreme Environment Applications

    Directory of Open Access Journals (Sweden)

    Chandradevi Ulaganathan

    2010-01-01

    Full Text Available An instrumentation channel is designed, implemented, and tested in a 0.5-μm SiGe BiCMOS process. The circuit features a reconfigurable Wheatstone bridge network that interfaces an assortment of external sensors to signal processing circuits. Also, analog sampling is implemented in the channel using a flying capacitor configuration. The analog samples are digitized by a low-power multichannel A/D converter. Measurement results show that the instrumentation channel supports input signals up to 200 Hz and operates across a wide temperature range of -180°C to 125°C. This work demonstrates the use of a commercially available first generation SiGe BiCMOS process in designing circuits suitable for extreme environment applications.

  11. Critical Role of a Single Position in the −35 Element for Promoter Recognition by Mycobacterium tuberculosis SigE and SigH▿

    OpenAIRE

    Song, Taeksun; Song, Seung-Eun; Raman, Sahadevan; Anaya, Mauricio; Husson, Robert N.

    2008-01-01

    Mycobacterial SigE and SigH both initiate transcription from the sigB promoter, suggesting that they recognize similar sequences. Through mutational and primer extension analyses, we determined that SigE and SigH recognize nearly identical promoters, with differences at the 3′ end of the −35 element distinguishing between SigE- and SigH-dependent promoters.

  12. Fabrication of SGOI material by oxidation of an epitaxial SiGe layer on an SOI wafer with H ions implantation

    International Nuclear Information System (INIS)

    Cheng Xinli; Chen Zhijun; Wang Yongjin; Jin Bo; Zhang Feng; Zou Shichang

    2005-01-01

    SGOI materials were fabricated by thermal dry oxidation of epitaxial H-ion implanted SiGe layers on SOI wafers. The hydrogen implantation was found to delay the oxidation rate of SiGe layer and to decrease the loss of Ge atoms during oxidation. Further, the H implantation did not degrade the crystallinity of SiGe layer during fabrication of the SGOI

  13. Different strain relaxation mechanisms in strained Si/Si sub 1 sub - sub x Ge sub x /Si heterostructures by high dose B sup + and BF sub 2 sup + doping

    CERN Document Server

    Chen, C C; Zhang, S L; Zhu, D Z; Vantomme, A

    2002-01-01

    Strained Si/Si sub 0 sub . sub 8 Ge sub 0 sub . sub 2 /Si heterostructures are implanted at room temperature with 7.5 keV B sup + and 33 keV BF sub 2 sup + ions to a high dose of 2x10 sup 1 sup 5 ions/cm sup 2 , respectively. The samples are subsequently subjected to three-step anneals (spacer anneal, oxidation anneal and rapid thermal anneal), which are used to simulate a real fabrication process of SiGe-based MOSFET devices. The damage induced by implantation and its recovery are characterized by 2 MeV sup 4 He sup + RBS/channeling spectrometry. A damage layer on the surface is induced by B sup + implantation, but BF sup + sub 2 ion implantation amorphizes the surface of Si/Si sub 0 sub . sub 8 Ge sub 0 sub . sub 2 /Si heterostructure. Channeling angular scans along the axial direction demonstrate that the strain stored in the SiGe layer could be nearly completely retained for the B sup + implanted and subsequently annealed sample. However, the strain in the BF sub 2 sup + implanted/annealed SiGe layer has...

  14. Stress-directed compositional patterning of SiGe substrates for lateral quantum barrier manipulation

    International Nuclear Information System (INIS)

    Ghosh, Swapnadip; Kaiser, Daniel; Sinno, Talid; Bonilla, Jose; Han, Sang M.

    2015-01-01

    While vertical stacking of quantum well and dot structures is well established in heteroepitaxial semiconductor materials, manipulation of quantum barriers in the lateral directions poses a significant engineering challenge. Here, we demonstrate lateral quantum barrier manipulation in a crystalline SiGe alloy using structured mechanical fields to drive compositional redistribution. To apply stress, we make use of a nano-indenter array that is pressed against a Si 0.8 Ge 0.2 wafer in a custom-made mechanical press. The entire assembly is then annealed at high temperatures, during which the larger Ge atoms are selectively driven away from areas of compressive stress. Compositional analysis of the SiGe substrates reveals that this approach leads to a transfer of the indenter array pattern to the near-surface elemental composition, resulting in near 100% Si regions underneath each indenter that are separated from each other by the surrounding Si 0.8 Ge 0.2 bulk. The “stress transfer” process is studied in detail using multiscale computer simulations that demonstrate its robustness across a wide range of applied stresses and annealing temperatures. While the “Si nanodot” structures formed here are not intrinsically useful as quantum structures, it is anticipated that the stress transfer process may be modified by judicious control of the SiGe film thickness and indenter array pattern to form more technologically useful structures

  15. High spin-polarization in ultrathin Co{sub 2}MnSi/CoPd multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Galanakis, I., E-mail: galanakis@upatras.gr

    2015-03-01

    Half-metallic Co{sub 2}MnSi finds a broad spectrum of applications in spintronic devices either in the form of thin films or as spacer in multilayers. Using state-of-the-art ab-initio electronic structure calculations we exploit the electronic and magnetic properties of ultrathin Co{sub 2}MnSi/CoPd multilayers. We show that these heterostructures combine high values of spin-polarization at the Co{sub 2}MnSi spacer with the perpendicular magnetic anisotropy of binary compounds such as CoPd. Thus they could find application in spintronic/magnetoelectronic devices. - Highlights: • Ab-initio study of ultrathin Co{sub 2}MnSi/CoPd multilayers. • Large values of spin-polarization at the Fermi are retained. • Route for novel spintronic/magnetoelectronic devices.

  16. Controlling light with plasmonic multilayers

    DEFF Research Database (Denmark)

    Orlov, Alexey A.; Zhukovsky, Sergei; Iorsh, Ivan V.

    2014-01-01

    metamaterials and describe their use for light manipulation at the nanoscale. While demonstrating the recently emphasized hallmark effect of hyperbolic dispersion, we put special emphasis to the comparison between multilayered hyperbolic metamaterials and more broadly defined plasmonic-multilayer metamaterials...

  17. Graphyne–graphene (nitride) heterostructure as nanocapacitor

    International Nuclear Information System (INIS)

    Bhattacharya, Barnali; Sarkar, Utpal

    2016-01-01

    Highlights: • Binding energy of heterostructures indicates the exothermic nature. • Increasing electric field enhances charge and energy stored in the system. • The external electric fields amplify the charge transfer between two flakes. • The capacitance value gets saturated above a certain electric field. - Abstract: A nanoscale capacitor composed of heterostructure derived from finite size graphyne flake and graphene (nitride) flake has been proposed and investigated using density functional theory (DFT). The exothermic nature of formation process of these heterostructures implies their stability. Significant charge transfer between two flakes generates permanent dipole in this heterostructures. The amount of charge transfer is tunable under the application of external electric field which enhances their applicability in electronics. We have specifically focused on the capacitive properties of different heterostructure composed of graphyne flake and graphene (nitride) flake, i.e., graphyne/graphene, graphyne/h-BN, graphyne/AlN, graphyne/GaN. The charge stored by each flake, energy storage, and capacitance are switchable under external electric field. Thus, our modeled heterostructures are a good candidate as nanoscale capacitor and can be used in nanocircuit. We found that the charge stored by each flake, energy storage, and capacitance value are highest for graphyne/GaN heterostructures.

  18. Graphyne–graphene (nitride) heterostructure as nanocapacitor

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharya, Barnali; Sarkar, Utpal, E-mail: utpalchemiitkgp@yahoo.com

    2016-10-20

    Highlights: • Binding energy of heterostructures indicates the exothermic nature. • Increasing electric field enhances charge and energy stored in the system. • The external electric fields amplify the charge transfer between two flakes. • The capacitance value gets saturated above a certain electric field. - Abstract: A nanoscale capacitor composed of heterostructure derived from finite size graphyne flake and graphene (nitride) flake has been proposed and investigated using density functional theory (DFT). The exothermic nature of formation process of these heterostructures implies their stability. Significant charge transfer between two flakes generates permanent dipole in this heterostructures. The amount of charge transfer is tunable under the application of external electric field which enhances their applicability in electronics. We have specifically focused on the capacitive properties of different heterostructure composed of graphyne flake and graphene (nitride) flake, i.e., graphyne/graphene, graphyne/h-BN, graphyne/AlN, graphyne/GaN. The charge stored by each flake, energy storage, and capacitance are switchable under external electric field. Thus, our modeled heterostructures are a good candidate as nanoscale capacitor and can be used in nanocircuit. We found that the charge stored by each flake, energy storage, and capacitance value are highest for graphyne/GaN heterostructures.

  19. sigE facilitates the adaptation of Bordetella bronchiseptica to stress conditions and lethal infection in immunocompromised mice

    Directory of Open Access Journals (Sweden)

    Barchinger Sarah E

    2012-08-01

    Full Text Available Abstract Background The cell envelope of a bacterial pathogen can be damaged by harsh conditions in the environment outside a host and by immune factors during infection. Cell envelope stress responses preserve the integrity of this essential compartment and are often required for virulence. Bordetella species are important respiratory pathogens that possess a large number of putative transcription factors. However, no cell envelope stress responses have been described in these species. Among the putative Bordetella transcription factors are a number of genes belonging to the extracytoplasmic function (ECF group of alternative sigma factors, some of which are known to mediate cell envelope stress responses in other bacteria. Here we investigate the role of one such gene, sigE, in stress survival and pathogenesis of Bordetella bronchiseptica. Results We demonstrate that sigE encodes a functional sigma factor that mediates a cell envelope stress response. Mutants of B. bronchiseptica strain RB50 lacking sigE are more sensitive to high temperature, ethanol, and perturbation of the envelope by SDS-EDTA and certain β-lactam antibiotics. Using a series of immunocompromised mice deficient in different components of the innate and adaptive immune responses, we show that SigE plays an important role in evading the innate immune response during lethal infections of mice lacking B cells and T cells. SigE is not required, however, for colonization of the respiratory tract of immunocompetent mice. The sigE mutant is more efficiently phagocytosed and killed by peripheral blood polymorphonuclear leukocytes (PMNs than RB50, and exhibits decreased cytotoxicity toward macrophages. These altered interactions with phagocytes could contribute to the defects observed during lethal infection. Conclusions Much of the work on transcriptional regulation during infection in B. bronchiseptica has focused on the BvgAS two-component system. This study reveals that the SigE

  20. Screening in multilayer graphene

    NARCIS (Netherlands)

    van Gelderen, R.; Olsen, Richard; de Morais Smith, C.

    2013-01-01

    In this paper, we study the static polarization in ABC-stacked multilayer graphene. Since the density of states diverges for these systems if the number of layers exceeds three, screening effects are expected to be important. In the random phase approximation, screening can be included through the

  1. Unlocking the Origin of Superior Performance of a Si-Ge Core-Shell Nanowire Quantum Dot Field Effect Transistor.

    Science.gov (United States)

    Dhungana, Kamal B; Jaishi, Meghnath; Pati, Ranjit

    2016-07-13

    The sustained advancement in semiconducting core-shell nanowire technology has unlocked a tantalizing route for making next generation field effect transistor (FET). Understanding how to control carrier mobility of these nanowire channels by applying a gate field is the key to developing a high performance FET. Herein, we have identified the switching mechanism responsible for the superior performance of a Si-Ge core-shell nanowire quantum dot FET over its homogeneous Si counterpart. A quantum transport approach is used to investigate the gate-field modulated switching behavior in electronic current for ultranarrow Si and Si-Ge core-shell nanowire quantum dot FETs. Our calculations reveal that for the ON state, the gate-field induced transverse localization of the wave function restricts the carrier transport to the outer (shell) layer with the pz orbitals providing the pathway for tunneling of electrons in the channels. The higher ON state current in the Si-Ge core-shell nanowire FET is attributed to the pz orbitals that are distributed over the entire channel; in the case of Si nanowire, the participating pz orbital is restricted to a few Si atoms in the channel resulting in a smaller tunneling current. Within the gate bias range considered here, the transconductance is found to be substantially higher in the case of a Si-Ge core-shell nanowire FET than in a Si nanowire FET, which suggests a much higher mobility in the Si-Ge nanowire device.

  2. Anomalous Fluorescence Enhancement from Double Heterostructure 3D Colloidal Photonic Crystals–A Multifunctional Fluorescence-Based Sensor Platform

    Science.gov (United States)

    Eftekhari, Ehsan; Li, Xiang; Kim, Tak H.; Gan, Zongsong; Cole, Ivan S.; Zhao, Dongyuan; Kielpinski, Dave; Gu, Min; Li, Qin

    2015-01-01

    Augmenting fluorescence intensity is of vital importance to the development of chemical and biochemical sensing, imaging and miniature light sources. Here we report an unprecedented fluorescence enhancement with a novel architecture of multilayer three-dimensional colloidal photonic crystals self-assembled from polystyrene spheres. The new technique uses a double heterostructure, which comprises a top and a bottom layer with a periodicity overlapping the excitation wavelength (E) of the emitters, and a middle layer with a periodicity matching the fluorescence wavelength (F) and a thickness that supports constructive interference for the excitation wavelength. This E-F-E double heterostructure displays direction-dependent light trapping for both excitation and fluorescence, coupling the modes of photonic crystal with multiple-beam interference. The E-F-E double heterostructure renders an additional 5-fold enhancement to the extraordinary FL amplification of Rhodamine B in monolithic E CPhCs, and 4.3-fold acceleration of emission dynamics. Such a self-assembled double heterostructue CPhCs may find significant applications in illumination, laser, chemical/biochemical sensing, and solar energy harvesting. We further demonstrate the multi-functionality of the E-F-E double heterostructure CPhCs in Hg (II) sensing. PMID:26400503

  3. Physical studies of strained Si/SiGe heterostructures. From virtual substrates to nanodevices

    Energy Technology Data Exchange (ETDEWEB)

    Minamisawa, Renato Amaral

    2011-10-21

    During the past two decades, the decrease in intrinsic delay of MOSFETs has been driven by the scaling of the device dimensions. The performance improvement has relied mostly in the increase of source velocity with gate scaling, while the transport properties of the channel have remained constant, i.e., those of conventional Si. Starting at the 90 nm node, uniaxial strain has been introduced in the transistor channel in order to further increase the source velocity. Beyond the 32 nm node, novel channel materials, with superior carrier velocities, and novel device architectures are required in order to continue the performance enhancement of MOSFETs while preserving the electrostatic control. In this Thesis, different physical aspects of strained Si and SiGe materials are investigated as a mean to increase carrier velocity in MOSFET channels. Novel approaches for the fabrication of strained Si based on ion implantation and anneal induced relaxation of virtual substrates are developed. The strain relaxation of SiGe layers is improved using a buried thin Si:C layer in the Si(100) substrate. Further, a Si{sup +} ion implantation and annealing method is investigated for relaxing virtual substrates using lower implantation dose. Finally, the uniaxial relaxation of {l_brace}110{r_brace} surface oriented substrates is demonstrated using a He ion implantation and anneal technique. Apart of channel material studies, the fundamental and technological challenges involved in the integration of strained Si and SiGe into MOSFETs are assessed. The impact of source and drain formation on the elastic strain and electrical properties of strained Si layers and nanowires is examined. Also, the formation of ultra-shallow junction in strained Si/strained Si{sub 0.5}Ge{sub 0.5}/SSOI heterostructures is investigated using different types of ion implanted specie and annealing. The results show that BF{sup +}{sub 2} implantation and low temperature annealing are suitable approaches for

  4. Ge nanobelts with high compressive strain fabricated by secondary oxidation of self-assembly SiGe rings

    DEFF Research Database (Denmark)

    Lu, Weifang; Li, Cheng; Lin, Guangyang

    2015-01-01

    Curled Ge nanobelts were fabricated by secondary oxidation of self-assembly SiGe rings, which were exfoliated from the SiGe stripes on the insulator. The Ge-rich SiGe stripes on insulator were formed by hololithography and modified Ge condensation processes of Si0.82Ge0.18 on SOI substrate. Ge...... nanobelts under a residual compressive strain of 2% were achieved, and the strain should be higher before partly releasing through bulge islands and breakage of the curled Ge nanobelts during the secondary oxidation process. The primary factor leading to compressive strain is thermal shrinkage of Ge...... nanobelts, which extrudes to Ge nanobelts in radial and tangent directions during the cooling process. This technique is promising for application in high-mobility Ge nano-scale transistors...

  5. Wave mechanics applied to semiconductor heterostructures

    International Nuclear Information System (INIS)

    Bastard, G.

    1990-01-01

    This book examines the basic electronic and optical properties of two dimensional semiconductor heterostructures based on III-V and II-VI compounds. The book explores various consequences of one-dimensional size-quantization on the most basic physical properties of heterolayers. Beginning with basic quantum mechanical properties of idealized quantum wells and superlattices, the book discusses the occurrence of bound states when the heterostructure is imperfect or when it is shone with near bandgap light

  6. Thermal conductivity engineering of bulk and one-dimensional Si-Ge nanoarchitectures.

    Science.gov (United States)

    Kandemir, Ali; Ozden, Ayberk; Cagin, Tahir; Sevik, Cem

    2017-01-01

    Various theoretical and experimental methods are utilized to investigate the thermal conductivity of nanostructured materials; this is a critical parameter to increase performance of thermoelectric devices. Among these methods, equilibrium molecular dynamics (EMD) is an accurate technique to predict lattice thermal conductivity. In this study, by means of systematic EMD simulations, thermal conductivity of bulk Si-Ge structures (pristine, alloy and superlattice) and their nanostructured one dimensional forms with square and circular cross-section geometries (asymmetric and symmetric) are calculated for different crystallographic directions. A comprehensive temperature analysis is evaluated for selected structures as well. The results show that one-dimensional structures are superior candidates in terms of their low lattice thermal conductivity and thermal conductivity tunability by nanostructuring, such as by diameter modulation, interface roughness, periodicity and number of interfaces. We find that thermal conductivity decreases with smaller diameters or cross section areas. Furthermore, interface roughness decreases thermal conductivity with a profound impact. Moreover, we predicted that there is a specific periodicity that gives minimum thermal conductivity in symmetric superlattice structures. The decreasing thermal conductivity is due to the reducing phonon movement in the system due to the effect of the number of interfaces that determine regimes of ballistic and wave transport phenomena. In some nanostructures, such as nanowire superlattices, thermal conductivity of the Si/Ge system can be reduced to nearly twice that of an amorphous silicon thermal conductivity. Additionally, it is found that one crystal orientation, [Formula: see text]100[Formula: see text], is better than the [Formula: see text]111[Formula: see text] crystal orientation in one-dimensional and bulk SiGe systems. Our results clearly point out the importance of lattice thermal conductivity

  7. Characterisation of diode-connected SiGe BiCMOS HBTs for space applications

    Science.gov (United States)

    Venter, Johan; Sinha, Saurabh; Lambrechts, Wynand

    2016-02-01

    Silicon-germanium (SiGe) bipolar complementary metal-oxide semiconductor (BiCMOS) transistors have vertical doping profiles reaching deeper into the substrate when compared to lateral CMOS transistors. Apart from benefiting from high-speed, high current gain and low-output resistance due to its vertical profile, BiCMOS technology is increasingly becoming a preferred technology for researchers to realise next-generation space-based optoelectronic applications. BiCMOS transistors have inherent radiation hardening, to an extent predictable cryogenic performance and monolithic integration potential. SiGe BiCMOS transistors and p-n junction diodes have been researched and used as a primary active component for over the last two decades. However, further research can be conducted with diode-connected heterojunction bipolar transistors (HBTs) operating at cryogenic temperatures. This work investigates these characteristics and models devices by adapting standard fabrication technology components. This work focuses on measurements of the current-voltage relationship (I-V curves) and capacitance-voltage relationships (C-V curves) of diode-connected HBTs. One configuration is proposed and measured, which is emitterbase shorted. The I-V curves are measured for various temperature points ranging from room temperature (300 K) to the temperature of liquid nitrogen (77 K). The measured datasets are used to extract a model of the formed diode operating at cryogenic temperatures and used as a standard library component in computer aided software designs. The advantage of having broad-range temperature models of SiGe transistors becomes apparent when considering implementation of application-specific integrated circuits and silicon-based infrared radiation photodetectors on a single wafer, thus shortening interconnects and lowering parasitic interference, decreasing the overall die size and improving on overall cost-effectiveness. Primary applications include space-based geothermal

  8. Observation of spin-selective tunneling in SiGe nanocrystals.

    Science.gov (United States)

    Katsaros, G; Golovach, V N; Spathis, P; Ares, N; Stoffel, M; Fournel, F; Schmidt, O G; Glazman, L I; De Franceschi, S

    2011-12-09

    Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in the valence band of the semiconductor. We demonstrate both experimentally and theoretically that spin-selective tunneling in semiconductor nanostructures can be achieved without the use of ferromagnetic contacts. The reported effect, which relies on mixing the light and heavy holes, should be observable in a broad class of quantum-dot systems formed in semiconductors with a degenerate valence band.

  9. Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Ozcan, Ahmet S., E-mail: asozcan@us.ibm.com [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States); Lavoie, Christian; Jordan-Sweet, Jean [IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598 (United States); Alptekin, Emre; Zhu, Frank [IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, New York 12533 (United States); Leith, Allen; Pfeifer, Brian D.; LaRose, J. D.; Russell, N. M. [TEL Epion Inc., 900 Middlesex Turnpike, Bldg. 6, Billerica, Massachusetts 01821 (United States)

    2016-04-21

    We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.

  10. SiGe HBT low noise amplifiers for ultra-wideband systems

    Directory of Open Access Journals (Sweden)

    Popov V. P.

    2013-02-01

    Full Text Available This paper presents the principles of design of integrated circuits low-noise amplifiers (LNA based on silicon-germanium heterojunction bipolar transistors (SiGe HBT for ultra-wideband (UWB systems. UWB systems range 0,5—10,6 GHz are used in communications, radars of medical applications and safety systems. The proposed UWB LNA implemented by inductorless or minimum number of inductors schemes. In this paper researched and designed two variants of UWB LNA 0,5—11 GHz frequency range.

  11. HfO2 nanocrystal memory on SiGe channel

    Science.gov (United States)

    Lin, Yu-Hsien; Chien, Chao-Hsin

    2013-02-01

    This study proposes a novel HfO2 nanocrystal memory on epi-SiGe (Ge: 15%) channel. Because SiGe has a smaller bandgap than that of silicon, it increases electron/hole injection and the enhances program/erase speeds. This study compares the characteristics of HfO2 nanocrystal memories with different oxynitride tunnel oxide thicknesses on Si and epi-SiGe substrate. Results show that the proposed nonvolatile memory possesses superior characteristics in terms of considerably large memory window for two-bits operation, high speed program/erase for low power applications, long retention time, excellent endurance, and strong immunity to disturbance.

  12. Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

    International Nuclear Information System (INIS)

    Ozcan, Ahmet S.; Lavoie, Christian; Jordan-Sweet, Jean; Alptekin, Emre; Zhu, Frank; Leith, Allen; Pfeifer, Brian D.; LaRose, J. D.; Russell, N. M.

    2016-01-01

    We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.

  13. Strain-Engineered Nanomembrane Substrates for Si/SiGe Heterostructures

    Science.gov (United States)

    Sookchoo, Pornsatit

    For Group IV materials, including silicon, germanium, and their alloys, although they are most widely used in the electronics industry, the development of photonic devices is hindered by indirect band gaps and large lattice mismatches. Thus, any heterostructures involving Si and Ge (4.17% lattice mismatch) are subject to plastic relaxation by dislocation formation in the heterolayers. These defects make many devices impossible and at minimum degrade the performance of those that are possible. Fabrication using elastic strain engineering in Si/SiGe nanomembranes (NMs) is an approach that is showing promise to overcome this limitation. A key advantage of such NM substrates over conventional bulk substrates is that they are relaxed elastically and therefore free of dislocations that occur in the conventional fabrication of SiGe substrates, which are transferred to the epilayers and roughen film interfaces. In this thesis, I use the strain engineering of NMs or NM stacks to fabricate substrates for the epitaxial growth of many repeating units of Si/SiGe heterostructure, known as a 'superlattice', by the elastic strain sharing of a few periods of the repeating unit of Si/SiGe heterolayers or a Si/SiGe/Si tri-layer structure. In both cases, the process begins with the epitaxial growth of Si/SiGe heterolayers on silicon-on-insulator (SOI), where each layer thickness is designed to stay below its kinetic critical thickness for the formation of dislocations. The heterostructure NMs are then released by etching of the SiO2 sacrificial layer in hydrofluoric acid. The resulting freestanding NMs are elastically relaxed by the sharing of strain between the heterolayers. The NMs can be bonded in-place to their host substrate or transferred to another host substrate for the subsequent growth of many periods of superlattice film. The magnitude of strain sharing in these freestanding NMs is influenced by their layer thicknesses and layer compositions. As illustrated in this

  14. SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations

    Science.gov (United States)

    Choi, Shinhyun; Tan, Scott H.; Li, Zefan; Kim, Yunjo; Choi, Chanyeol; Chen, Pai-Yu; Yeon, Hanwool; Yu, Shimeng; Kim, Jeehwan

    2018-01-01

    Although several types of architecture combining memory cells and transistors have been used to demonstrate artificial synaptic arrays, they usually present limited scalability and high power consumption. Transistor-free analog switching devices may overcome these limitations, yet the typical switching process they rely on—formation of filaments in an amorphous medium—is not easily controlled and hence hampers the spatial and temporal reproducibility of the performance. Here, we demonstrate analog resistive switching devices that possess desired characteristics for neuromorphic computing networks with minimal performance variations using a single-crystalline SiGe layer epitaxially grown on Si as a switching medium. Such epitaxial random access memories utilize threading dislocations in SiGe to confine metal filaments in a defined, one-dimensional channel. This confinement results in drastically enhanced switching uniformity and long retention/high endurance with a high analog on/off ratio. Simulations using the MNIST handwritten recognition data set prove that epitaxial random access memories can operate with an online learning accuracy of 95.1%.

  15. Vertical-Cavity In-plane Heterostructures: Physics and Applications

    DEFF Research Database (Denmark)

    Taghizadeh, Alireza; Mørk, Jesper; Chung, Il-Sug

    2015-01-01

    We show that the in-plane heterostructures realized in vertical cavities with high contrast grating(HCG) reflector enables exotic configurations of heterostructure and photonic wells. In photonic crystal heterostructures forming a photonic well, the property of a confined mode is determined by th...

  16. Design of a broadband passive X-band double-balanced mixer in SiGe HBT technology

    DEFF Research Database (Denmark)

    Michaelsen, Rasmus Schandorph; Johansen, Tom Keinicke; Tamborg, Kjeld M.

    2014-01-01

    In this paper, a passive double-balanced mixer in SiGe HBT technology is presented. Owing to lack of suitable passive mixing elements in the technology, the mixing elements are formed by diode-connected HBTs. The mixer uses lumped element Marchand baluns on both the local oscillator (LO) and the ...

  17. Ultra-broadband Nonlinear Microwave Monolithic Integrated Circuits in SiGe, GaAs and InP

    DEFF Research Database (Denmark)

    Krozer, Viktor; Johansen, Tom Keinicke; Djurhuus, Torsten

    2006-01-01

    Analog MMIC circuits with ultra-wideband operation are discussed in view of their frequency limitation and different circuit topologies. Results for designed and fabricated frequency converters in SiGe, GaAs, and InP technologies are presented in the paper. RF type circuit topologies exhibit a flat...

  18. Materials and Device Optimization for High Power SiGe HBT Amplifiers at X-Band Frequencies

    Science.gov (United States)

    Mueller, C. H.; Alterovitz, S. A.; Croke, E. T.

    1999-01-01

    The driving force behind SiGe development is the potential for high frequency and high power devices that provide comparable functionality as more expensive semiconductors such as InP and GaAs, but at a much lower cost. Additional advantages are the potential for incorporating SiGe devices onto monolithic Si chips and fabricating entire systems, such as receiver front-ends or RF power amplifiers, on a single chip. The work reported in this paper summarizes the materials and simulation aspects of a much larger project, which will eventually lead to SiGe HBT amplifiers with output powers greater than 1 W and over 35 dB gain at X-band frequencies. To achieve these goals, accurate analysis of the materials properties, especially in the base region, and highly refined amplifier design procedures must be established. In this paper we report the precision that may be obtained using optical ellipsometry to monitor the base and emitter thicknesses and Ge content of the base. We also report the extent of crystalline degradation in state-of-the-art SiGe films with high Ge contents. The objective of this work is to access the materials quality of HBT structures, and then use this data to model how various defects impact device performance, and which defects are most likely to limit high power and/or high frequency performance.

  19. A SiGe BiCMOS double-balanced mixer with active balun for X-band Doppler radar

    DEFF Research Database (Denmark)

    Michaelsen, Rasmus S.; Johansen, Tom K.; Tamborg, Kjeld M.

    2015-01-01

    In this paper, we present an X-band doublebalanced mixer in SiGe BiCMOS technology. The mixer core consists of a LO Matched quad diode ring using diode-connected Heterojunction Bipolar Transistors (HBTs). The mixer is integrated with a low-noise, high-linearity active balun on the RF port...

  20. Atom probe tomography analysis of SiGe fins embedded in SiO2: Facts and artefacts.

    Science.gov (United States)

    Melkonyan, D; Fleischmann, C; Arnoldi, L; Demeulemeester, J; Kumar, A; Bogdanowicz, J; Vurpillot, F; Vandervorst, W

    2017-08-01

    We present atom probe analysis of 40nm wide SiGe fins embedded in SiO 2 and discuss the root cause of artefacts observed in the reconstructed data. Additionally, we propose a simple data treatment routine, relying on complementary transmission electron microscopy analysis, to improve compositional analysis of the embedded SiGe fins. Using field evaporation simulations, we show that for high oxide to fin width ratios the difference in evaporation field thresholds between SiGe and SiO 2 results in a non-hemispherical emitter shape with a negative curvature in the direction across, but not along the fin. This peculiar emitter shape leads to severe local variations in radius and hence in magnification across the emitter apex causing ion trajectory aberrations and crossings. As shown by our experiments and simulations, this translates into unrealistic variations in the detected atom densities and faulty dimensions in the reconstructed volume, with the width of the fin being up to six-fold compressed. Rectification of the faulty dimensions and density variations in the SiGe fin was demonstrated with our dedicated data treatment routine. Copyright © 2017 Elsevier B.V. All rights reserved.

  1. Self-Passivation by Fluorine Plasma Treatment and Low-Temperature Annealing in SiGe Nanowires for Biochemical Sensors

    Directory of Open Access Journals (Sweden)

    Kow-Ming Chang

    2014-01-01

    Full Text Available Nanowires are widely used as highly sensitive sensors for electrical detection of biological and chemical species. Modifying the band structure of strained-Si metal-oxide-semiconductor field-effect transistors by applying the in-plane tensile strain reportedly improves electron and hole mobility. The oxidation-induced Ge condensation increases the Ge fraction in a SiGe-on-insulator (SGOI and substantially increases hole mobility. However, oxidation increases the number of surface states, resulting in hole mobility degradation. In this work, 3-aminopropyltrimethoxysilane (APTMS was used as a biochemical reagent. The hydroxyl molecule on the oxide surface was replaced by the methoxy groups of the APTMS molecule. We proposed a surface plasma treatment to improve the electrical properties of SiGe nanowires. Fluorine plasma treatment can result in enhanced rates of thermal oxidation and speed up the formation of a self-passivation oxide layer. Like a capping oxide layer, the self-passivation oxide layer reduces the rate of follow-up oxidation. Preoxidation treatment also improved the sensitivity of SiGe nanowires because the Si-F binding was held at a more stable interface state compared to bare nanowire on the SiGe surface. Additionally, the sensitivity can be further improved by either the N2 plasma posttreatment or the low-temperature postannealing due to the suppression of outdiffusion of Ge and F atoms from the SiGe nanowire surface.

  2. Extended x-ray absorption fine structure studies of amorphous and crystalline Si-Ge alloys with synchrotron radiation

    International Nuclear Information System (INIS)

    Kajiyama, Hiroshi

    1988-01-01

    Extended X-ray absorption fine structure (EXAFS) is a powerful probe to study the local structure around the atom of a specific element. In conventional EXAFS analysis, it has been known that reliable structures are obtained with the different values of absorption edge energy for different neighboring atoms. It is shown in this study that the Ge-K edge EXAFS resulting from the Ge-Ge and Ge-Si bonds in hydrogenated amorphous Si-Ge alloys was able to be excellently explained by a unique absorption edge energy value, provided that a newly developed formula based on the spherical wave function of photoelectrons is used. The microscopic structures of hydrogenated amorphous Si-Ge alloys and crystalline Si-Ge alloys have been determined using the EXAFS method. The lengths of Ge-Ge and Ge-Si bonds were constant throughout their entire composition range, and it was found that the length of Ge-Si bond was close to the average value of the bond lengths of both Ge and Si crystals. In crystalline Si-Ge alloys, it has been shown that the bonds relaxed completely, while the lattice constant varied monotonously with the composition. (Kako, I.)

  3. Digital multilayer tomography

    International Nuclear Information System (INIS)

    Dueber, C.; Klose, K.J.; Thelen, M.

    1991-01-01

    With digital multilayer tomography a sequence of projection images is recorded by an image intensifier television system and stored as digital data during a linear run of a layer sequence. Using this data record, tomograms of the examined body region can be computed for any layer thickness by shifts and superimposition of the single projections later at a digital workstation. The qualities of digital and conventional tomograms are basically comparable. A drawback of digital tomography is its lower local resolution (512 x 512 image matrix), advantages are a lower radiation exposure, a shorter patient examination time, and the facilities of digital image processing (later processing, archive setup, transmission). (orig.) [de

  4. A heterostructured SnO{sub 2}–TiO{sub 2} thin film prepared by Langmuir–Blodgett technique

    Energy Technology Data Exchange (ETDEWEB)

    Choudhury, Sipra, E-mail: sipra@barc.gov.in; Betty, C.A.

    2013-08-15

    SnO{sub 2}–TiO{sub 2} heterostructure films were prepared through Langmuir–Blodgett (LB) route. LB films of octadecyl amine (ODA)–titanyl oxalate multilayer deposited on Si (100) and decomposed at 600 °C showed rutile and anatase phases of ultrathin TiO{sub 2} film. Subsequently, multilayer LB film of ODA–stannate deposited on the pre deposited TiO{sub 2} film after decomposition at 600 °C resulted in thin SnO{sub 2} films on the TiO{sub 2} thin film. The phase analysis of the SnO{sub 2}–TiO{sub 2} film showed cassiterite phase of SnO{sub 2} as well as the rutile/anatase mixture of TiO{sub 2} indicating a SnO{sub 2}–TiO{sub 2} heterostructured film. Surface morphology of the pure TiO{sub 2} film and SnO{sub 2}–TiO{sub 2} film were analyzed by using AFM. Electrical characterization by AC impedance analysis suggested SnO{sub 2}–TiO{sub 2} heterostructure formation. DC current voltage measurement showed increase in photocurrent indicating visible light absorption and efficient charge separation under the sunlight type radiation. - Highlights: • Thin film of SnO{sub 2}–TiO{sub 2} heterostructure was prepared by Langmuir–Blodgett technique. • The decomposition temperature of LB film was 600 °C to form oxide thin films. • Structural and electrical properties were studied by XRD, DC and AC impedance studies. • Increase in photocurrent was observed in heterostructure film in presence of visible light.

  5. Geodesign the multilayered water safety

    NARCIS (Netherlands)

    Sophronides, Panayiotis; Steenbruggen, John; Scholten, Henk J.; Giaoutzi, Maria

    2016-01-01

    This paper aims to frame the multi-layered water safety concept in the context of a systematic, thorough, multidisciplinary and collaborative methodology for complex problems solving, i.e. geodesign. Multi-layered safety is an integrated flood risk management (FRM) concept based not only on flood

  6. Compositionally Graded Multilayer Ceramic Capacitors.

    Science.gov (United States)

    Song, Hyun-Cheol; Zhou, Jie E; Maurya, Deepam; Yan, Yongke; Wang, Yu U; Priya, Shashank

    2017-09-27

    Multilayer ceramic capacitors (MLCC) are widely used in consumer electronics. Here, we provide a transformative method for achieving high dielectric response and tunability over a wide temperature range through design of compositionally graded multilayer (CGML) architecture. Compositionally graded MLCCs were found to exhibit enhanced dielectric tunability (70%) along with small dielectric losses (design of miniature filters and power converters.

  7. Spin Transport in Semiconductor heterostructures

    International Nuclear Information System (INIS)

    Marinescu, Domnita Catalina

    2011-01-01

    The focus of the research performed under this grant has been the investigation of spin transport in magnetic semiconductor heterostructures. The interest in these systems is motivated both by their intriguing physical properties, as the physical embodiment of a spin-polarized Fermi liquid, as well as by their potential applications as spintronics devices. In our work we have analyzed several different problems that affect the spin dynamics in single and bi-layer spin-polarized two-dimensional (2D) systems. The topics of interests ranged from the fundamental aspects of the electron-electron interactions, to collective spin and charge density excitations and spin transport in the presence of the spin-orbit coupling. The common denominator of these subjects is the impact at the macroscopic scale of the spin-dependent electron-electron interaction, which plays a much more subtle role than in unpolarized electron systems. Our calculations of several measurable parameters, such as the excitation frequencies of magneto-plasma modes, the spin mass, and the spin transresistivity, propose realistic theoretical estimates of the opposite-spin many-body effects, in particular opposite-spin correlations, that can be directly connected with experimental measurements.

  8. Magnetic metallic multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Hood, Randolph Quentin [Univ. of California, Berkeley, CA (United States)

    1994-04-01

    Utilizing self-consistent Hartree-Fock calculations, several aspects of multilayers and interfaces are explored: enhancement and reduction of the local magnetic moments, magnetic coupling at the interfaces, magnetic arrangements within each film and among non-neighboring films, global symmetry of the systems, frustration, orientation of the various moments with respect to an outside applied field, and magnetic-field induced transitions. Magnetoresistance of ferromagnetic-normal-metal multilayers is found by solving the Boltzmann equation. Results explain the giant negative magnetoresistance encountered in these systems when an initial antiparallel arrangement is changed into a parallel configuration by an external magnetic field. The calculation depends on (1) geometric parameters (thicknesses of layers), (2) intrinsic metal parameters (number of conduction electrons, magnetization, and effective masses in layers), (3) bulk sample properties (conductivity relaxation times), (4) interface scattering properties (diffuse scattering versus potential scattering at the interfaces, and (5) outer surface scattering properties (specular versus diffuse surface scattering). It is found that a large negative magnetoresistance requires considerable asymmetry in interface scattering for the two spin orientations. Features of the interfaces that may produce an asymmetrical spin-dependent scattering are studied: varying interfacial geometric random roughness with no lateral coherence, correlated (quasi-periodic) roughness, and varying chemical composition of the interfaces. The interplay between these aspects of the interfaces may enhance or suppress the magnetoresistance, depending on whether it increases or decreases the asymmetry in the spin-dependent scattering of the conduction electrons.

  9. Ultrahard Multilayer Coatings

    International Nuclear Information System (INIS)

    Chrzan, D.C.; Dugger, M.; Follstaedt, D.M.; Friedman, Lawrence H.; Friedmann, T.A.; Knapp, J.A.; McCarty, K.F.; Medlin, D.L.; Mirkarimi, P.B.; Missert, N.; Newcomer, P.P.; Sullivan, J.P.; Tallant, D.R.

    1999-01-01

    We have developed a new multilayer a-tC material that is thick stress-free, adherent, low friction, and with hardness and stiffness near that of diamond. The new a-tC material is deposited by J pulsed-laser deposition (PLD) at room temperature, and fully stress-relieved by a short thermal anneal at 600 ampersand deg;C. A thick multilayer is built up by repeated deposition and annealing steps. We measured 88 GPa hardness, 1100 GPa Young's modulus, and 0.1 friction coefficient (under high load). Significantly, these results are all well within the range reported for crystalline diamond. In fact, this material, if considered separate from crystalline diamond, is the 2nd hardest material known to man. Stress-free a-tC also has important advantages over thin film diamond; namely, it is smooth, processed at lower temperature, and can be grown on a much broader range of substrates. This breakthrough will enable a host of applications that we are actively pursuing in MEMs, sensors, LIGA, etc

  10. Ultrahard Multilayer Coatings

    Energy Technology Data Exchange (ETDEWEB)

    Chrzan, D.C.; Dugger, M.; Follstaedt, D.M.; Friedman, Lawrence H.; Friedmann, T.A.; Knapp, J.A.; McCarty, K.F.; Medlin, D.L.; Mirkarimi, P.B.; Missert, N.; Newcomer, P.P.; Sullivan, J.P.; Tallant, D.R.

    1999-05-01

    We have developed a new multilayer a-tC material that is thick stress-free, adherent, low friction, and with hardness and stiffness near that of diamond. The new a-tC material is deposited by J pulsed-laser deposition (PLD) at room temperature, and fully stress-relieved by a short thermal anneal at 600°C. A thick multilayer is built up by repeated deposition and annealing steps. We measured 88 GPa hardness, 1100 GPa Young's modulus, and 0.1 friction coefficient (under high load). Significantly, these results are all well within the range reported for crystalline diamond. In fact, this material, if considered separate from crystalline diamond, is the 2nd hardest material known to man. Stress-free a-tC also has important advantages over thin film diamond; namely, it is smooth, processed at lower temperature, and can be grown on a much broader range of substrates. This breakthrough will enable a host of applications that we are actively pursuing in MEMs, sensors, LIGA, etc.

  11. Magnetic metallic multilayers

    International Nuclear Information System (INIS)

    Hood, R.Q.

    1994-04-01

    Utilizing self-consistent Hartree-Fock calculations, several aspects of multilayers and interfaces are explored: enhancement and reduction of the local magnetic moments, magnetic coupling at the interfaces, magnetic arrangements within each film and among non-neighboring films, global symmetry of the systems, frustration, orientation of the various moments with respect to an outside applied field, and magnetic-field induced transitions. Magnetoresistance of ferromagnetic-normal-metal multilayers is found by solving the Boltzmann equation. Results explain the giant negative magnetoresistance encountered in these systems when an initial antiparallel arrangement is changed into a parallel configuration by an external magnetic field. The calculation depends on (1) geometric parameters (thicknesses of layers), (2) intrinsic metal parameters (number of conduction electrons, magnetization, and effective masses in layers), (3) bulk sample properties (conductivity relaxation times), (4) interface scattering properties (diffuse scattering versus potential scattering at the interfaces, and (5) outer surface scattering properties (specular versus diffuse surface scattering). It is found that a large negative magnetoresistance requires considerable asymmetry in interface scattering for the two spin orientations. Features of the interfaces that may produce an asymmetrical spin-dependent scattering are studied: varying interfacial geometric random roughness with no lateral coherence, correlated (quasi-periodic) roughness, and varying chemical composition of the interfaces. The interplay between these aspects of the interfaces may enhance or suppress the magnetoresistance, depending on whether it increases or decreases the asymmetry in the spin-dependent scattering of the conduction electrons

  12. Two-dimensional heterostructures for energy storage

    Energy Technology Data Exchange (ETDEWEB)

    Gogotsi, Yury G. [Drexel Univ., Philadelphia, PA (United States); Pomerantseva, Ekaterina [Drexel Univ., Philadelphia, PA (United States)

    2017-06-12

    Two-dimensional (2D) materials provide slit-shaped ion diffusion channels that enable fast movement of lithium and other ions. However, electronic conductivity, the number of intercalation sites, and stability during extended cycling are also crucial for building high-performance energy storage devices. While individual 2D materials, such as graphene, show some of the required properties, none of them can offer all properties needed to maximize energy density, power density, and cycle life. Here we argue that stacking different 2D materials into heterostructured architectures opens an opportunity to construct electrodes that would combine the advantages of the individual building blocks while eliminating the associated shortcomings. We discuss characteristics of common 2D materials and provide examples of 2D heterostructured electrodes that showed new phenomena leading to superior electrochemical performance. As a result, we also consider electrode fabrication approaches and finally outline future steps to create 2D heterostructured electrodes that could greatly expand current energy storage technologies.

  13. Ultrahigh efficiencies in vertical epitaxial heterostructure architectures

    Science.gov (United States)

    Fafard, S.; York, M. C. A.; Proulx, F.; Valdivia, C. E.; Wilkins, M. M.; Arès, R.; Aimez, V.; Hinzer, K.; Masson, D. P.

    2016-02-01

    Optical to electrical power converting semiconductor devices were achieved with breakthrough performance by designing a Vertical Epitaxial Heterostructure Architecture. The devices are featuring modeled and measured conversion efficiencies greater than 65%. The ultrahigh conversion efficiencies were obtained by monolithically integrating several thin GaAs photovoltaic junctions tailored with submicron absorption thicknesses and grown in a single crystal by epitaxy. The heterostructures that were engineered with a number N of such ultrathin junctions yielded an optimal external quantum efficiencies approaching 100%/N. The heterostructures are capable of output voltages that are multiple times larger than the corresponding photovoltage of the input light. The individual nanoscale junctions are each generating up to ˜1.2 V of output voltage when illuminated in the infrared. We compare the optoelectronic properties of phototransducers prepared with designs having 5 to 12 junctions and that are exhibiting voltage outputs between >5 V and >14 V.

  14. High-speed and highly efficient Si optical modulator with strained SiGe layer

    Science.gov (United States)

    Fujikata, Junichi; Noguchi, Masataka; Kim, Younghyun; Han, Jaehoon; Takahashi, Shigeki; Nakamura, Takahiro; Takenaka, Mitsuru

    2018-03-01

    We developed a high-speed and highly efficient depletion-type Si optical modulator (Si-MOD) with a pn junction by applying a p-type-doped strained SiGe layer, which was stacked on a lateral pn junction-type Si-MOD. We designed an optimum Si-MOD, which is one of the most efficient Si-MODs with a pn junction, and demonstrated highly efficient modulations of 0.67 and 0.81 V·cm for V π L at dc reverse bias voltages of ‑0.5 and ‑2 Vdc, respectively. We also demonstrated a high-speed operation of 25 Gbps for the Si-MOD at a wavelength of around 1.3 µm.

  15. Degradation of Au–Ti contacts of SiGe HBTs during electromagnetic field stress

    International Nuclear Information System (INIS)

    Alaeddine, A; Genevois, C; Cuvilly, F; Daoud, K; Kadi, M

    2011-01-01

    This paper addresses electromagnetic field stress effects on SiGe heterojunction bipolar transistors (HBTs)' reliability issues, focusing on the relationship between the stress-induced current and device structure degradations. The origin of leakage currents and electrical parameter shifts in failed transistors has been studied by complementary failure analysis techniques. Characterization of the structure before and after ageing was performed by transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS). For the stressed samples, interface deformations of the titanium (Ti) thin film around all gold (Au) contacts have been clearly detected. These degradations include localized interface reaction between Au and Ti layers as well as their lateral atomic migration causing a significant reduction of Ti thickness. EDS analysis of the disordered region which is near the Si 3 N 4 interface has shown significant signals from Au. These observations could be attributed to the coupling between high current densities induced by stress and thermal effects due to local heating effects

  16. Esaki tunnel diodes based on vertical Si-Ge nanowire heterojunctions

    Science.gov (United States)

    Fung, Wayne Y.; Chen, Lin; Lu, Wei

    2011-08-01

    High performance Esaki tunnel diodes [L. Esaki, Phys. Rev. 109, 603 (1958)] based on small-diameter Ge/Si core/shell nanowires vertically grown on Si substrates are demonstrated. The devices exhibit pronounced negative differential resistance with peak-to-valley current ratio of 2.75, high peak current density of 2.4 kA/cm2, and high tunneling current density of 237 kA/cm2 at 1 V reverse bias, all obtained at room temperature. The peak current is found to increase with temperature and the data can be well explained with a band-to-band tunneling model. These results suggest that Si-Ge heterojunction with low defect density can be obtained for device applications such as tunnel diodes and tunnel field-effect transistors.

  17. Anomalous dose rate effects in gamma irradiated SiGe heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Banerjee, G.; Niu, G.; Cressler, J.D.; Clark, S.D.; Palmer, M.J.; Ahlgren, D.C.

    1999-01-01

    Low dose rate (LDR) cobalt-60 (0.1 rad(Si)/s) gamma irradiated Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs) were studied. Comparisons were made with devices irradiated with 300 rad(Si)/s gamma radiation to verify if LDR radiation is a serious radiation hardness assurance (RHA) issue. Almost no LDR degradation was observed in this technology up to 50 krad(Si). The assumption of the presence of two competing mechanisms is justified by experimental results. At low total dose (le20 krad), an anomalous base current decrease was observed which is attributed to self-annealing of deep-level traps to shallower levels. An increase in base current at larger total doses is attributed to radiation induced generation-recombination (G/R) center generation. Experiments on gate-assisted lateral PNP transistors and 2D numerical simulations using MEDICI were used to confirm these assertions

  18. Impacts of doping on epitaxial germanium thin film quality and Si-Ge interdiffusion

    KAUST Repository

    Zhou, Guangnan

    2018-04-03

    Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown, annealed and characterized by several different material characterization methods. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. B doped Ge films have threading dislocations above 1 × 10 cm, while P and As doping can reduce the threading dislocation density to be less than 10 cm without annealing. The interdiffusion of Si and Ge of different films have been investigated experimentally and theoretically. A quantitative model of Si-Ge interdiffusion under extrinsic conditions across the full x range was established including the dislocationmediated diffusion. The Kirkendall effect has been observed. The results are of technical significance for the structure, doping, and process design of Ge-on-Si based devices, especially for photonic applications.

  19. Reliability of high mobility SiGe channel MOSFETs for future CMOS applications

    CERN Document Server

    Franco, Jacopo; Groeseneken, Guido

    2014-01-01

    Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability. This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated. The extensive experimental datasets collected on a variety of processed 300mm wafers and pr...

  20. 75-GHz SiGe Heterojunction Bipolor Transistors: GaAs Performance in Si Technology?

    Science.gov (United States)

    1992-05-22

    frequency results of the base-collector junction without penalty on cur- SiGe and Si epitaxial base transistors (cf. Figs. I and rent density...0.60x.3 0.604.3 20 / IT (GHz) 2, 2o . .. 50A SI BJT R(W/Ob) 3.8 s 10 k (0) 60 so’ ’ . . Re (a) is 1985 1990 R (0I) 18 8 Publication Date 0VCE0 M 2.4 3.2...ee ls "SIMS profile for the SiGe-base transistors of 0Fig. 1, The Ge grading is positioned precisely 20 in the most heavily doped region of the base NC

  1. Boron diffusion in strained and strain-relaxed SiGe

    International Nuclear Information System (INIS)

    Wang, C.C.; Sheu, Y.M.; Liu, Sally; Duffy, R.; Heringa, A.; Cowern, N.E.B.; Griffin, P.B.

    2005-01-01

    SiGe has been utilized for aggressive CMOS technologies development recently and there are many references [M. Shima, T. Ueno, T. Kumise, H. Shido, Y. Sakuma, S. Nakamura, Symposium on VLSI Technology Technical Digest, 2002, pp. 94-95; T. Ghani, M. Armstrong, C. Auth, M. Bost, P. Charvat, G. Glass, T. Hoffmann, K. Johnson, C. Kenyon, J. Klaus, B. McIntyre, K. Mistry, A. Murthy, J. Sandford, M. Silberstein, S. Sivakumar, P. Smith, K. Zawadzki, S. Thompson, M. Bohr, International Electron Devices Meeting Technical Digest, December 2003, pp. 978-980; P. Bai, C. Auth, S. Balakrishnan, M. Bost, R. Brain, V. Chikarmane, R. Heussner, M. Hussein, J. Hwang, D. Ingerly, R. James, J. Jeong, C. Kenyon, E. Lee, S. Lee, N. Lindert, M. Liu, Z. Ma, T. Marieb, A. Murthy, R. Nagisetty, S. Natarajan, J. Neirynck, A. Ott, C. Parker, J. Sebastian, R. Shaheed, S. Sivakumar, J. Steigerwald, S. Tyagi, C. Weber, B. Woolery, A. Yeoh, K. Zhang, M. Bohr, International Electron Devices Meeting Technical Digest, December 2004, pp. 657-660] presenting the advantages brought by it. A better understanding regarding the boron diffusion behavior within and in the vicinity of SiGe is necessary to optimize the extension and the source/drain in pMOSFET. In order to achieve the goal, both effects from mechanical strain and Ge doping on boron diffusion have been investigated. However, only a few publications discuss the impacts of both. Furthermore, most researches investigate these two effects under the conditions of low boron concentration [P. Kuo, J.L. Hoyt, J.F. Gibbons, J.E. Turner, D. Lefforge, Appl. Phys. Lett. 66 (January (5)) (1995) 580-582; N.R. Zangenberg, J. Fage-Pedersen, J. Lundsgaard Hansen, A. Nylandsted Larsen, J. Appl. Phys. 94 (September (6)) (2003) 3883-3890] and high thermal budget anneal [P. Kuo, J.L. Hoyt, J.F. Gibbons, J.E. Turner, D. Lefforge, Appl. Phys. Lett. 66 (January (5)) (1995) 580-582; N.R. Zangenberg, J. Fage-Pedersen, J. Lundsgaard Hansen, A. Nylandsted Larsen, J. Appl

  2. Influence of alloy disorder scattering on the hole mobility of SiGe nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Martinez-Blanque, Celso; Ruiz, Francisco G., E-mail: franruiz@ugr.es; Godoy, Andres, E-mail: agodoy@ugr.es; Marin, Enrique G.; Donetti, Luca; Gámiz, Francisco [Dpto. de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, Av. Fuentenueva S/N, 18071 Granada (Spain)

    2014-12-28

    In this work, we analyze the influence of the alloy disorder (AD) scattering on the low-field hole mobility of Si{sub 1-x}Ge{sub x} nanowires (NWs). To do it, the electrostatic description is achieved through a self-consistent solution of the Poisson equation and the six-band k⋅p method in the cross section of the NW. The momentum relaxation time approximation is used to calculate the hole mobility, including alloy disorder and phonon scattering mechanisms, and the use of approximations to calculate the overlap integrals for the scattering matrix elements is discussed. We study the influence of the alloy disorder scattering on the total mobility compared to the phonon contribution, for different values of the AD scattering parameter proposed in the literature, and analyze the performance of SiGe NWs as a function of the Ge molar fraction for both low and high inversion charge densities.

  3. Multi-layers castings

    Directory of Open Access Journals (Sweden)

    J. Szajnar

    2010-01-01

    Full Text Available In paper is presented the possibility of making of multi-layers cast steel castings in result of connection of casting and welding coating technologies. First layer was composite surface layer on the basis of Fe-Cr-C alloy, which was put directly in founding process of cast carbon steel 200–450 with use of preparation of mould cavity method. Second layer were padding welds, which were put with use of TIG – Tungsten Inert Gas surfacing by welding technology with filler on Ni matrix, Ni and Co matrix with wolfram carbides WC and on the basis on Fe-Cr-C alloy, which has the same chemical composition with alloy, which was used for making of composite surface layer. Usability for industrial applications of surface layers of castings were estimated by criterion of hardness and abrasive wear resistance of type metal-mineral.

  4. Magnetic leverage effects in amorphous SmCo/CoAlZr heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Procter, R. A., E-mail: r.a.procter@warwick.ac.uk; Hase, T. P. A. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Magnus, F.; Andersson, G.; Hjörvarsson, B. [Department of Physics and Astronomy, Uppsala University, Box 516, 751 20 Uppsala (Sweden); Sánchez-Hanke, C. [National Synchrotron Light Source, Brookhaven National Laboratory, Upton, New York 11973 (United States)

    2015-08-10

    Although magnetic heterostructures are the basis of many magnetic technologies, the mechanisms involved in magnetization reversals in such structures are not fully understood, especially in amorphous multilayers. Here, we report on the SmCo/CoAlZr system and exploit resonant magnetic x-ray scattering to probe the element specific magnetization reversals. When combined into a tri-layer structure, two different switching fields and reversal mechanisms are observed for the Sm and Co sub-lattices. We argue that the decoupling of the sub-lattices arises from the local distribution of atomic species within the amorphous matrix leading to a strong magnetic leverage effect and exchange pinning. The decoupling arises due to strong interactions between regions of high Co density which span the interface. The relatively sparse interactions between Sm and Co induce a localized pinning of the Co-rich areas, resulting in an exchange bias in minor loops and an enhanced coercivity.

  5. Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Zhongguang; Khanaki, Alireza; Tian, Hao; Zheng, Renjing; Suja, Mohammad; Liu, Jianlin, E-mail: jianlin@ece.ucr.edu [Quantum Structures Laboratory, Department of Electrical and Computer Engineering, University of California, Riverside, California 92521 (United States); Zheng, Jian-Guo [Irvine Materials Research Institute, University of California, Irvine, California 92697-2800 (United States)

    2016-07-25

    Graphene/hexagonal boron nitride (G/h-BN) heterostructures have attracted a great deal of attention because of their exceptional properties and wide variety of potential applications in nanoelectronics. However, direct growth of large-area, high-quality, and stacked structures in a controllable and scalable way remains challenging. In this work, we demonstrate the synthesis of h-BN/graphene (h-BN/G) heterostructures on cobalt (Co) foil by sequential deposition of graphene and h-BN layers using plasma-assisted molecular beam epitaxy. It is found that the coverage of h-BN layers can be readily controlled on the epitaxial graphene by growth time. Large-area, uniform-quality, and multi-layer h-BN films on thin graphite layers were achieved. Based on an h-BN (5–6 nm)/G (26–27 nm) heterostructure, capacitor devices with Co(foil)/G/h-BN/Co(contact) configuration were fabricated to evaluate the dielectric properties of h-BN. The measured breakdown electric field showed a high value of ∼2.5–3.2 MV/cm. Both I-V and C-V characteristics indicate that the epitaxial h-BN film has good insulating characteristics.

  6. Diffusion in silicon isotope heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Silvestri, Hughes Howland [Univ. of California, Berkeley, CA (United States)

    2004-01-01

    The simultaneous diffusion of Si and the dopants B, P, and As has been studied by the use of a multilayer structure of isotopically enriched Si. This structure, consisting of 5 pairs of 120 nm thick natural Si and 28Si enriched layers, enables the observation of 30Si self-diffusion from the natural layers into the 28Si enriched layers, as well as dopant diffusion from an implanted source in an amorphous Si cap layer, via Secondary Ion Mass Spectrometry (SIMS). The dopant diffusion created regions of the multilayer structure that were extrinsic at the diffusion temperatures. In these regions, the Fermi level shift due to the extrinsic condition altered the concentration and charge state of the native defects involved in the diffusion process, which affected the dopant and self-diffusion. The simultaneously recorded diffusion profiles enabled the modeling of the coupled dopant and self-diffusion. From the modeling of the simultaneous diffusion, the dopant diffusion mechanisms, the native defect charge states, and the self- and dopant diffusion coefficients can be determined. This information is necessary to enhance the physical modeling of dopant diffusion in Si. It is of particular interest to the modeling of future electronic Si devices, where the nanometer-scale features have created the need for precise physical models of atomic diffusion in Si. The modeling of the experimental profiles of simultaneous diffusion of B and Si under p-type extrinsic conditions revealed that both species are mediated by neutral and singly, positively charged Si self-interstitials. The diffusion of As and Si under extrinsic n-type conditions yielded a model consisting of the interstitialcy and vacancy mechanisms of diffusion via singly negatively charged self-interstitials and neutral vacancies. The simultaneous diffusion of P and Si has been modeled on the basis of neutral and singly negatively charged self-interstitials and neutral and singly

  7. Tunable SnSe2/WSe2Heterostructure Tunneling Field Effect Transistor.

    Science.gov (United States)

    Yan, Xiao; Liu, Chunsen; Li, Chao; Bao, Wenzhong; Ding, Shijin; Zhang, David Wei; Zhou, Peng

    2017-09-01

    The burgeoning 2D semiconductors can maintain excellent device electrostatics with an ultranarrow channel length and can realize tunneling by electrostatic gating to avoid deprivation of band-edge sharpness resulting from chemical doping, which make them perfect candidates for tunneling field effect transistors. Here this study presents SnSe 2 /WSe 2 van der Waals heterostructures with SnSe 2 as the p-layer and WSe 2 as the n-layer. The energy band alignment changes from a staggered gap band offset (type-II) to a broken gap (type-III) when changing the negative back-gate voltage to positive, resulting in the device operating as a rectifier diode (rectification ratio ~10 4 ) or an n-type tunneling field effect transistor, respectively. A steep average subthreshold swing of 80 mV dec -1 for exceeding two decades of drain current with a minimum of 37 mV dec -1 at room temperature is observed, and an evident trend toward negative differential resistance is also accomplished for the tunneling field effect transistor due to the high gate efficiency of 0.36 for single gate devices. The I ON /I OFF ratio of the transfer characteristics is >10 6 , accompanying a high ON current >10 -5 A. This work presents original phenomena of multilayer 2D van der Waals heterostructures which can be applied to low-power consumption devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Investigation of the field dependent spin structure of exchange coupled magnetic heterostructures

    International Nuclear Information System (INIS)

    Gurieva, Tatiana

    2016-05-01

    This thesis describes the investigation of the field dependent magnetic spin structure of an antiferromagnetically (AF) coupled Fe/Cr heterostructure sandwiched between a hardmagnetic FePt buffer layer and a softmagnetic Fe top layer. The depth-resolved experimental studies of this system were performed via Magneto-optical Kerr effect (MOKE), Vibrating Sample Magnetometry (VSM) and various measuring methods based on nuclear resonant scattering (NRS) technique. Nucleation and evolution of the magnetic spiral structure in the AF coupled Fe/Cr multilayer structure in an azimuthally rotating external magnetic field were observed using NRS. During the experiment a number of time-dependent magnetic side effects (magnetic after-effect, domain-wall creep effect) caused by the non-ideal structure of a real sample were observed and later explained. Creation of the magnetic spiral structure in rotating external magnetic field was simulated using a one-dimensional micromagnetic model.The cross-sectional magnetic X-ray diffraction technique was conceived and is theoretically described in the present work. This method allows to determine the magnetization state of an individual layer in the magnetic heterostructure. It is also applicable in studies of the magnetic structure of tiny samples where conventional x-ray reflectometry fails.

  9. Mie Scattering by Concentric Multilayers

    Science.gov (United States)

    Smith, David D.; Fuller, Kirk A.; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    The Mie formulation for homogeneous spheres is generalized to handle concentric multilayers in a manner that exploits an analogy with stratified planar systems, enabling these structures to be treated as photonic bandgap materials.

  10. Multilayered Magnetic Gelatin Membrane Scaffolds

    Science.gov (United States)

    Samal, Sangram K.; Goranov, Vitaly; Dash, Mamoni; Russo, Alessandro; Shelyakova, Tatiana; Graziosi, Patrizio; Lungaro, Lisa; Riminucci, Alberto; Uhlarz, Marc; Bañobre-López, Manuel; Rivas, Jose; Herrmannsdörfer, Thomas; Rajadas, Jayakumar; De Smedt, Stefaan; Braeckmans, Kevin; Kaplan, David L.; Dediu, V. Alek

    2016-01-01

    A versatile approach for the design and fabrication of multilayer magnetic scaffolds with tunable magnetic gradients is described. Multilayer magnetic gelatin membrane scaffolds with intrinsic magnetic gradients were designed to encapsulate magnetized bioagents under an externally applied magnetic field for use in magnetic-field-assisted tissue engineering. The temperature of the individual membranes increased up to 43.7 °C under an applied oscillating magnetic field for 70 s by magnetic hyperthermia, enabling the possibility of inducing a thermal gradient inside the final 3D multilayer magnetic scaffolds. On the basis of finite element method simulations, magnetic gelatin membranes with different concentrations of magnetic nanoparticles were assembled into 3D multilayered scaffolds. A magnetic-gradient-controlled distribution of magnetically labeled stem cells was demonstrated in vitro. This magnetic biomaterial–magnetic cell strategy can be expanded to a number of different magnetic biomaterials for various tissue engineering applications. PMID:26451743

  11. General Considerations of the Electrostatic Boundary Conditions in Oxide Heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Higuchi, Takuya

    2011-08-19

    When the size of materials is comparable to the characteristic length scale of their physical properties, novel functionalities can emerge. For semiconductors, this is exemplified by the 'superlattice' concept of Esaki and Tsu, where the width of the repeated stacking of different semiconductors is comparable to the 'size' of the electrons, resulting in novel confined states now routinely used in opto-electronics. For metals, a good example is magnetic/non-magnetic multilayer films that are thinner than the spin-scattering length, from which giant magnetoresistance (GMR) emerged, used in the read heads of hard disk drives. For transition metal oxides, a similar research program is currently underway, broadly motivated by the vast array of physical properties that they host. This long-standing notion has been recently invigorated by the development of atomic-scale growth and probe techniques, which enables the study of complex oxide heterostructures approaching the precision idealized in Fig. 1(a). Taking the subset of oxides derived from the perovskite crystal structure, the close lattice match across many transition metal oxides presents the opportunity, in principle, to develop a 'universal' heteroepitaxial materials system. Hand-in-hand with the continual improvements in materials control, an increasingly relevant challenge is to understand the consequences of the electrostatic boundary conditions which arise in these structures. The essence of this issue can be seen in Fig. 1(b), where the charge sequence of the sublayer 'stacks' for various representative perovskites is shown in the ionic limit, in the (001) direction. To truly 'universally' incorporate different properties using different materials components, be it magnetism, ferroelectricity, superconductivity, etc., it is necessary to access and join different charge sequences, labelled here in analogy to the designations 'group IV, III-V, II

  12. Electron-acoustic-phonon interaction in core/shell Ge/Si and Si/Ge nanowires

    Science.gov (United States)

    Santiago-Pérez, Darío G.; Trallero-Giner, C.; Marques, G. E.

    2017-04-01

    General expressions for the electron- and hole-acoustic-phonon deformation potential Hamiltonians (HE-DP) are derived for the case of Ge/Si and Si/Ge core/shell nanowire structures (NWs) with circular cross section. Based on the short-range elastic continuum approach and on derived analytical results, the spatial confinement effects on the phonon displacement vector, the phonon dispersion relation and the electron- and hole-phonon scattering amplitudes are analyzed. It is shown that the acoustic displacement vector, phonon frequencies and HE-DP present mixed torsional, axial, and radial components depending on the angular momentum quantum number and phonon wave vector under consideration. The treatment shows that bulk group velocities of the constituent materials are renormalized due to the spatial confinement and intrinsic strain at the interface. The role of insulating shell on the phonon dispersion and electron-phonon coupling in Ge/Si and Si/Ge NWs are discussed.

  13. Evaluation of COTS SiGe, SOI, and Mixed Signal Electronic Parts for Extreme Temperature Use in NASA Missions

    Science.gov (United States)

    Patterson, Richard L.; Hammoud, Ahmad

    2010-01-01

    The NASA Electronic Parts and Packaging (NEPP) Program sponsors a task at the NASA Glenn Research Center titled "Reliability of SiGe, SOI, and Advanced Mixed Signal Devices for Cryogenic Space Missions." In this task COTS parts and flight-like are evaluated by determining their performance under extreme temperatures and thermal cycling. The results from the evaluations are published on the NEPP website and at professional conferences in order to disseminate information to mission planners and system designers. This presentation discusses the task and the 2010 highlights and technical results. Topics include extreme temperature operation of SiGe and SOI devices, all-silicon oscillators, a floating gate voltage reference, a MEMS oscillator, extreme temperature resistors and capacitors, and a high temperature silicon operational amplifier.

  14. Structural, dynamic, and vibrational properties during heat transfer in Si/Ge superlattices: A Car-Parrinello molecular dynamics study

    International Nuclear Information System (INIS)

    Ji, Pengfei; Zhang, Yuwen; Yang, Mo

    2013-01-01

    The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective

  15. Effect of strain, substrate surface and growth rate on B-doping in selectively grown SiGe layers

    International Nuclear Information System (INIS)

    Ghandi, R.; Kolahdouz, M.; Hallstedt, J.; Wise, R.; Wejtmans, Hans; Radamson, H.H.

    2008-01-01

    In this work, the role of strain and growth rate on boron incorporation in selective epitaxial growth (SEG) of B-doped Si 1-x Ge x (x = 0.15-0.25) layers in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. A focus has been made on the strain distribution and B incorporation in SEG of SiGe layers

  16. Heterostructures based on inorganic and organic van der Waals systems

    Directory of Open Access Journals (Sweden)

    Gwan-Hyoung Lee

    2014-09-01

    Full Text Available The two-dimensional limit of layered materials has recently been realized through the use of van der Waals (vdW heterostructures composed of weakly interacting layers. In this paper, we describe two different classes of vdW heterostructures: inorganic vdW heterostructures prepared by co-lamination and restacking; and organic-inorganic hetero-epitaxy created by physical vapor deposition of organic molecule crystals on an inorganic vdW substrate. Both types of heterostructures exhibit atomically clean vdW interfaces. Employing such vdW heterostructures, we have demonstrated various novel devices, including graphene/hexagonal boron nitride (hBN and MoS2 heterostructures for memory devices; graphene/MoS2/WSe2/graphene vertical p-n junctions for photovoltaic devices, and organic crystals on hBN with graphene electrodes for high-performance transistors.

  17. Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

    Energy Technology Data Exchange (ETDEWEB)

    Vanacore, G. M.; Zani, M.; Tagliaferri, A., E-mail: alberto.tagliaferri@polimi.it [CNISM-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Nicotra, G. [IMM-CNR, Stradale Primosole 50, I-95121 Catania (Italy); Bollani, M. [CNR-IFN, LNESS, Via Anzani 42, I-22100 Como (Italy); Bonera, E.; Montalenti, F.; Picco, A.; Boioli, F. [Dipartimento di Scienza dei Materiali and L-NESS, Università Milano-Bicocca, via Cozzi 53, I-20125 Milano (Italy); Capellini, G. [Department of Sciences at the Università Roma Tre, Via Vasca Navale 79, 00146 Roma (Italy); Isella, G. [CNISM, LNESS, Dipartimento di Fisica, Politecnico di Milano (Polo di Como), Via Anzani 42, I-22100 Como (Italy); Osmond, J. [ICFO–The Institute of Photonic Sciences, Av. Carl Friedrich Gauss, 3, E-08860 Castelldefels (Barcelona) (Spain)

    2015-03-14

    The hetero-epitaxial strain relaxation in nano-scale systems plays a fundamental role in shaping their properties. Here, the elastic and plastic relaxation of self-assembled SiGe islands grown by surface-thermal-diffusion from a local Ge solid source on Si(100) are studied by atomic force and transmission electron microscopies, enabling the simultaneous investigation of the strain relaxation in different dynamical regimes. Islands grown by this technique remain dislocation-free and preserve a structural coherence with the substrate for a base width as large as 350 nm. The results indicate that a delay of the plastic relaxation is promoted by an enhanced Si-Ge intermixing, induced by the surface-thermal-diffusion, which takes place already in the SiGe overlayer before the formation of a critical nucleus. The local entropy of mixing dominates, leading the system toward a thermodynamic equilibrium, where non-dislocated, shallow islands with a low residual stress are energetically stable. These findings elucidate the role of the interface dynamics in modulating the lattice distortion at the nano-scale, and highlight the potential use of our growth strategy to create composition and strain-controlled nano-structures for new-generation devices.

  18. Impact of Ge profile on the performance of PNP SiGe HBT on thin film SOI

    Science.gov (United States)

    Misra, Prasanna K.; Qureshi, S.

    2012-10-01

    The pnp SiGe HBT on thin film SOI is investigated with different Ge profiles using 2D numerical simulations in MEDICI. The base current, collector current, DC current gain, AC voltage gain, unity current gain frequency and breakdown voltage is obtained for a 0.09 × 1.0 μm2 pnp SiGe HBT with triangular (0%-30%), trapezoidal (10%- 20%) and box (15%) Ge profiles in the base layer. The results obtained with the Ge profiles, has been analyzed and compared. The Ft BVCEO product for triangular, trapezoidal and box Ge profiles has been found as 190.8, 401, and 359.6 GHzV respectively. The tradeoff between voltage gain and unity current gain frequency for the Ge profiles has been analyzed. The simulation result suggests that the pnp SiGe HBT on thin film SOI with trapezoidal Ge profile is a potential candidate for the high speed complementary bipolar circuits that can be used in high performance mixed signal applications.

  19. Multiferroics properties in BiFeO3/CoFe2O4 heterostructures thin films deposited on (111) SrTiO3

    Science.gov (United States)

    Singh, Gulab; Singh, Manoj K.; Kumar, Aditya; Dussan, S.; Katiyar, Ram S.

    2016-05-01

    The multiferroic properties of BiFeO3-CoFe2O4 (BFO-CFO) heterostructures thin film grown on (111) SrTiO3 (STO) substrates by employing pulsed laser deposition (PLD) method, have been studied.X ray diffraction analysis reveals the presence of BFO and CFO in two separate phases. The heterostructures BFO/CFO/STO(111) thin films show well - shaped hysteresis loop with saturated magnetization and coercive field, which are much larger than pure BFO/STO thin film. The frequency dependent dielectric anomalies in BFO-CFO multilayer are attributed to the interfacial effect across the presence of CFO as a separate phase embedded in BFO matrix.

  20. Analysis of Critical Dimensions for Nanowire Core-Multishell Heterostructures

    OpenAIRE

    Yan, Xin; Fan, Shuyu; Zhang, Xia; Ren, Xiaomin

    2015-01-01

    Critical dimensions for nanowire core-multishell heterostructures are analyzed by using finite-element method based on the energy equilibrium criteria. Results show that the nanowire core-shell heterostructure can sufficiently reduce the strain in the shell and increase the critical shell thickness. The critical dimensions for the nanowire core-multishell heterostructure are determined by the stress fields generated at two heterointerfaces. For thin barrier, the critical dimensions decrease a...

  1. Properties of laser-crystallized polycrystalline SiGe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Weizman, Moshe

    2008-06-06

    In this thesis, structural, electrical, and optical properties of laser-crystallized polycrystalline Si{sub 1-x}Ge{sub x} thin films with 0SiGe samples that are exposed to a single laser pulse exhibit a ripple structure that evolves into a hillock structure when the samples are irradiated with additional laser pulses. - It is maintained that the main mechanism behind the structure formation is an instability of the propagating solid-liquid interface during solidification. - The study of defects with electron spin resonance showed that laser-crystallized poly-Si{sub 1-x}Ge{sub x} thin films with 0SiGe films was lower and amounted to N{sub s}=7 x 10{sup 17} cm{sup -3}. - Germanium-rich laser-crystallized poly-SiGe thin films exhibited mostly a broad atypical electric dipole spin resonance (EDSR) signal that was accompanied by a nearly temperature-independent electrical conductivity in the range 20-100 K. - Most likely, the origin of the grain boundary conductance is due to dangling-bond defects and not impurities. Metallic-like conductance occurs when the dangling-bond defect density is above a critical value of about N{sub C} {approx} 10{sup 18} cm{sup -3}. - Laser crystallized poly-Si{sub 1-x}Ge{sub x} thin films with x{>=}0.5 exhibit optical absorption behavior that is characteristic for disordered SiGe, implying that the absorption occurs primarily at the grain boundaries. A sub-band-gap absorption peak was found for

  2. Thermal response in van der Waals heterostructures

    KAUST Repository

    Gandi, Appala

    2016-11-21

    We solve numerically the Boltzmann transport equations of the phonons and electrons to understand the thermoelectric response in heterostructures of M2CO2 (M: Ti, Zr, Hf) MXenes with transition metal dichalcogenide monolayers. Low frequency optical phonons are found to occur as a consequence of the van der Waals bonding, contribute significantly to the thermal transport, and compensate for the reduced contributions of the acoustic phonons (increased scattering cross-sections in heterostructures), such that the thermal conductivities turn out to be similar to those of the bare MXenes. Our results indicate that the important superlattice design approach of thermoelectrics (to reduce the thermal conductivity) may be effective for two-dimensional van der Waals materials when used in conjunction with intercalation. © 2016 IOP Publishing Ltd.

  3. Tunable magnetotransport in Fe/hBN/graphene/hBN/Pt(Fe) epitaxial multilayers

    Science.gov (United States)

    Magnus Ukpong, Aniekan

    2018-03-01

    Theoretical and computational analysis of the magnetotransport properties and spin-transfer torque field-induced switching of magnetization density in vertically-stacked multilayers is presented. Using epitaxially-capped free layers of Pt and Fe, atom-resolved magnetic moments and spin-transfer torques are computed at finite bias. The calculations are performed within linear response approximation to the spin-density reformulation of the van der Waals density functional theory. Dynamical spin excitations are computed as a function of a spin-transfer torque induced magnetic field along the magnetic easy axis, and the corresponding spin polarization perpendicular to the easy axis is obtained. Bias-dependent giant anisotropic magnetoresistance of up to 3200% is obtained in the nonmagnetic-metal-capped Fe/hBN/graphene/hBN/Pt multilayer architecture. Since this specific heterostructure is not yet fabricated and characterized, the predicted high performance has not been demonstrated experimentally. Nevertheless, similar calculations performed on the Fe/hBN/Co stack show that the tunneling magnetoresistance obtained at the Fermi-level is in excellent agreement with results of recent magnetotransport measurements on magnetic tunnel junctions that contain the monolayer hBN tunnel region. The magnitude of the spin-transfer torque is found to increase as the tunneling spin current increases, and this activates the magnetization switching process due to increased charge accumulation. This mechanism causes substantial spin backflow, which manifests as rapid undulations in the bias-dependent tunneling spin currents. The implication of these findings on the design of nanoscale spintronic devices with spin-transfer torque tunable magnetization density is discussed. Insights derived from this study are expected to enhance the prospects for developing and integrating artificially assembled van der Waals multilayer heterostructures as the preferred material platform for efficient

  4. Limitations of effective medium theory in multilayer graphite/hBN heterostructures

    DEFF Research Database (Denmark)

    Petersen, René; Pedersen, Thomas Garm; Gjerding, Morten Niklas

    2016-01-01

    We apply effective medium theory (EMT) to metamaterials consisting of a varying number of consecutive sheets of graphene and hexagonal boron nitride, and compare this with a full calculation of the permittivity and the reflection based on the tight binding method and the transfer matrix method...

  5. Graphene diamond-like carbon films heterostructure

    International Nuclear Information System (INIS)

    Zhao, Fang; Afandi, Abdulkareem; Jackman, Richard B.

    2015-01-01

    A limitation to the potential use of graphene as an electronic material is the lack of control over the 2D materials properties once it is deposited on a supporting substrate. Here, the use of Diamond-like Carbon (DLC) interlayers between the substrate and the graphene is shown to offer the prospect of overcoming this problem. The DLC films used here, more properly known as a-C:H with ∼25% hydrogen content, have been terminated with N or F moieties prior to graphene deposition. It is found that nitrogen terminations lead to an optical band gap shrinkage in the DLC, whilst fluorine groups reduce the DLC's surface energy. CVD monolayer graphene subsequently transferred to DLC, N terminated DLC, and F terminated DLC has then been studied with AFM, Raman and XPS analysis, and correlated with Hall effect measurements that give an insight into the heterostructures electrical properties. The results show that different terminations strongly affect the electronic properties of the graphene heterostructures. G-F-DLC samples were p-type and displayed considerably higher mobility than the other heterostructures, whilst G-N-DLC samples supported higher carrier densities, being almost metallic in character. Since it would be possible to locally pattern the distribution of these differing surface terminations, this work offers the prospect for 2D lateral control of the electronic properties of graphene layers for device applications

  6. Voltage control of magnetism in multiferroic heterostructures.

    Science.gov (United States)

    Liu, Ming; Sun, Nian X

    2014-02-28

    Electrical tuning of magnetism is of great fundamental and technical importance for fast, compact and ultra-low power electronic devices. Multiferroics, simultaneously exhibiting ferroelectricity and ferromagnetism, have attracted much interest owing to the capability of controlling magnetism by an electric field through magnetoelectric (ME) coupling. In particular, strong strain-mediated ME interaction observed in layered multiferroic heterostructures makes it practically possible for realizing electrically reconfigurable microwave devices, ultra-low power electronics and magnetoelectric random access memories (MERAMs). In this review, we demonstrate this remarkable E-field manipulation of magnetism in various multiferroic composite systems, aiming at the creation of novel compact, lightweight, energy-efficient and tunable electronic and microwave devices. First of all, tunable microwave devices are demonstrated based on ferrite/ferroelectric and magnetic-metal/ferroelectric composites, showing giant ferromagnetic resonance (FMR) tunability with narrow FMR linewidth. Then, E-field manipulation of magnetoresistance in multiferroic anisotropic magnetoresistance and giant magnetoresistance devices for achieving low-power electronic devices is discussed. Finally, E-field control of exchange-bias and deterministic magnetization switching is demonstrated in exchange-coupled antiferromagnetic/ferromagnetic/ferroelectric multiferroic hetero-structures at room temperature, indicating an important step towards MERAMs. In addition, recent progress in electrically non-volatile tuning of magnetic states is also presented. These tunable multiferroic heterostructures and devices provide great opportunities for next-generation reconfigurable radio frequency/microwave communication systems and radars, spintronics, sensors and memories.

  7. SiGe HBT cryogenic preamplification for higher bandwidth donor spin read-out

    Science.gov (United States)

    Curry, Matthew; Carr, Stephen; Ten-Eyck, Greg; Wendt, Joel; Pluym, Tammy; Lilly, Michael; Carroll, Malcolm

    2014-03-01

    Single-shot read-out of a donor spin can be performed using the response of a single-electron-transistor (SET). This technique can produce relatively large changes in current, on the order of 1 (nA), to distinguish between the spin states. Despite the relatively large signal, the read-out time resolution has been limited to approximately 100 (kHz) of bandwidth because of noise. Cryogenic pre-amplification has been shown to extend the response of certain detection circuits to shorter time resolution and thus higher bandwidth. We examine a SiGe HBT circuit configuration for cryogenic preamplification, which has potential advantages over commonly used HEMT configurations. Here we present 4 (K) measurements of a circuit consisting of a Silicon-SET inline with a Heterojunction-Bipolar-Transistor (HBT). We compare the measured bandwidth with and without the HBT inline and find that at higher frequencies the signal-to-noise-ratio (SNR) with the HBT inline exceeds the SNR without the HBT inline. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE, Office of Basic Energy Sciences user facility. The work was supported by the Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  8. Practice guidelines on the use of esophageal manometry - A GISMAD-SIGE-AIGO medical position statement.

    Science.gov (United States)

    Savarino, Edoardo; de Bortoli, Nicola; Bellini, Massimo; Galeazzi, Francesca; Ribolsi, Mentore; Salvador, Renato; Savarino, Vincenzo; Penagini, Roberto

    2016-10-01

    Patients with esophageal symptoms potentially associated to esophageal motor disorders such as dysphagia, chest pain, heartburn and regurgitation, represent one of the most frequent reasons for referral to gastroenterological evaluation. The utility of esophageal manometry in clinical practice is: (1) to accurately define esophageal motor function, (2) to identify abnormal motor function, and (3) to establish a treatment plan based on motor abnormalities. With this in mind, in the last decade, investigations and technical advances, with the introduction of high-resolution esophageal manometry, have enhanced our understanding and management of esophageal motility disorders. The following recommendations were developed to assist physicians in the appropriate use of esophageal manometry in modern patient care. They were discussed and approved after a comprehensive review of the medical literature pertaining to manometric techniques and their recent application. This position statement created under the auspices of the Gruppo Italiano di Studio per la Motilità dell'Apparato Digerente (GISMAD), Società Italiana di Gastroenterologia ed Endoscopia Digestiva (SIGE) and Associazione Italiana Gastroenterologi ed Endoscopisti Digestivi Ospedalieri (AIGO) is intended to help clinicians in applying manometric studies in the most fruitful manner within the context of their patients with esophageal symptoms. Copyright © 2016 Editrice Gastroenterologica Italiana S.r.l. Published by Elsevier Ltd. All rights reserved.

  9. A Cryogenic SiGe Low-noise Amplifier Optimized for Phased-array Feeds

    Science.gov (United States)

    Groves, Wavley M., III; Morgan, Matthew A.

    2017-08-01

    The growing number of phased-array feeds (PAF) being built for radio astronomy demonstrates an increasing need for low-noise amplifiers (LNA), which are designed for repeatability, low noise, and ease of manufacture. Specific design features that help to achieve these goals include the use of unpackaged transistors (for cryogenic operation); single-polarity biasing; straight plug-in radio frequency (RF) interfaces to facilitate installation and re-work; and the use of off-the-shelf components. The focal L-band array for the Green Bank Telescope (FLAG) is a cooperative effort by Brigham Young University and the National Radio Astronomy Observatory using warm dipole antennae and cryogenic Silicon Germanium Heterojunction Bipolar Transistor (SiGe HBT) LNAs. These LNAs have an in band gain average of 38 dB and 4.85 Kelvin average noise temperature. Although the FLAG instrument was the driving instrument behind this development, most of the key features of the design and the advantages they offer apply broadly to other array feeds, including independent-beam and phased, and for many antenna types such as horn, dipole, Vivaldi, connected-bowtie, etc. This paper focuses on the unique requirements array feeds have for low-noise amplifiers and how amplifier manufacturing can accommodate these needs.

  10. Diffusion Mechanisms and Lattice Locations of Thermal-Equilibrium Defects in Si-Ge Alloys

    CERN Multimedia

    Lyutovich, K; Touboltsev, V; Laitinen, P O; Strohm, A

    2002-01-01

    It is generally accepted that Ge and Si differ considerably with respect to intrinsic-point-defect-mediated diffusion. In Ge, the native point defects dominating under thermal-equilibium conditions at all solid-state temperatures accessible in diffusion experiments are vacancies, and therefore Ge self-diffusion is vacancy-controlled. In Si, by contrast, self-interstitials and vacancies co-exist in thermal equilibrium. Whereas in the most thoroughly investigated temperature regime above about 1000$^\\circ$C Si self-diffusion is self-interstitial-controlled, it is vacancy-controlled at lower temperatures. According to the scenario displayed above, self-diffusion in Si-Ge alloys is expected to change from an interstitialcy mechanism on the Si side to a vacancy mechanism on the Ge side. Therefore, $^{71}$Ge self-diffusion experiments in Si$_{1- \\it y}$Ge$_{\\it y}$ as a function of composition Y are highly interesting. In a first series of experiments the diffusion of Ge in 0.4 to 10 $\\mu$m thick, relaxed, low-disl...

  11. Homogeneous SiGe crystal growth in microgravity by the travelling liquidus-zone method

    International Nuclear Information System (INIS)

    Kinoshita, K; Arai, Y; Inatomi, Y; Sakata, K; Takayanagi, M; Yoda, S; Miyata, H; Tanaka, R; Sone, T; Yoshikawa, J; Kihara, T; Shibayama, H; Kubota, Y; Shimaoka, T; Warashina, Y

    2011-01-01

    Homogeneous SiGe crystal growth experiments will be performed on board the ISS 'Kibo' using a gradient heating furnace (GHF). A new crystal growth method invented for growing homogeneous mixed crystals named 'travelling liquidus-zone (TLZ) method' is evaluated by the growth of Si 0.5 Ge 0.5 crystals in space. We have already succeeded in growing homogeneous 2mm diameter Si 0.5 Ge 0.5 crystals on the ground but large diameter homogeneous crystals are difficult to be grown due to convection in a melt. In microgravity, larger diameter crystals can be grown with suppressing convection. Radial concentration profiles as well as axial profiles in microgravity grown crystals will be measured and will be compared with our two-dimensional TLZ growth model equation and compositional variation is analyzed. Results are beneficial for growing large diameter mixed crystals by the TLZ method on the ground. Here, we report on the principle of the TLZ method for homogeneous crystal growth, results of preparatory experiments on the ground and plan for microgravity experiments.

  12. Effect of compressive and tensile strain on misfit dislocation injection in SiGe epitaxial layers

    Energy Technology Data Exchange (ETDEWEB)

    Wegscheider, W. [Walter Schottky Institut, Garching (Germany); Cerva, H. [Siemens AG, Research Lab., Muenchen (Germany)

    1993-05-01

    The relaxation behavior of short-period Si/Ge superlattices and Si{sub x}Ge{sub 1-x} alloy layers under compressive and tensile strain field is compared experimentally by means of transmission electron microscopy as well as theoretically on ethebasis of a half-loop dislocation nucleation mode. It was found that misfit dislocations in tensily strained layers grown on Ge(001) substrates are imperfect and of the 90{degrees} Shockley type provided some critical misfit f{sub c} is exceeded. Subsequent nucleation and glide of these partial dislocations on adjacent (111) glide planes leads to the formation of stacking faults and microtwins. In the low misfit regime (f

  13. Influence of irradiation on mechanical properties of Si-Ge alloys

    Energy Technology Data Exchange (ETDEWEB)

    Sichinava, Avtandil; Bokuchava, Guram; Chubinidze, Giorgi; Archuadze, Giorgi [Ilia Vekua Sukhumi Institute of Physics and Technology, Tbilisi (Georgia); Gapishvili, Nodar [Ilia Vekua Sukhumi Institute of Physics and Technology, Tbilisi (Georgia); Georgian Technical University, Tbilisi (Georgia)

    2017-07-15

    Impact of various irradiation (Ar and He ions, high energy electrons) on microhardness and indentation of monocrystalline Si{sub 0,98}Ge{sub 0,02} alloy is studied. Samples of Si and SiGe alloy are obtained by Czochralski (CZ) method in the [111] direction in the atmosphere of high purity Ar. High energy electron irradiation with fluence of ∝10{sup 12} cm{sup -2} is conducted at the Clinac 2100iX. Ar and He ion implantation is performed on modernized ''VEZUVI-3M'' plant. It is shown that for all types of irradiation the microhardness and indentation modulus versus load are characterized by reverse indentation size effect (ISE). With the increase of fluences of Ar and He ions, the maximum value of the effect increases. At high values of loading force impact on the indenter the mechanical characteristics slowly decrease. Impact of isochronous thermal annealing on mechanical properties of high energy electron irradiated samples is studied. Non-monotonic changes of microhardness and indentation modulus are revealed in the temperature range of 200-260 C. It is proposed that such changes are caused by radiation defects transformation. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Transfer matrices for multilayer structures

    International Nuclear Information System (INIS)

    Baquero, R.

    1988-08-01

    We consider four of the transfer matrices defined to deal with multilayer structures. We deduce algorithms to calculate them numerically, in a simple and neat way. We illustrate their application to semi-infinite systems using SGFM formulae. These algorithms are of fast convergence and allow a calculation of bulk-, surface- and inner-layers band structure in good agreement with much more sophisticated calculations. Supermatrices, interfaces and multilayer structures can be calculated in this way with a small computational effort. (author). 10 refs

  15. Multi-Layer Traffic Steering

    DEFF Research Database (Denmark)

    Fotiadis, Panagiotis; Polignano, Michele; Gimenez, Lucas Chavarria

    2013-01-01

    This paper investigates the potentials of traffic steering in the Radio Resource Control (RRC) Idle state by evaluating the Absolute Priorities (AP) framework in a multilayer Long Term Evolution (LTE) macrocell scenario. Frequency priorities are broadcast on the system information and RRC Idle...

  16. Multilayer Controller for Outdoor Vehicle

    DEFF Research Database (Denmark)

    Reske-Nielsen, Anders; Mejnertsen, Asbjørn; Andersen, Nils Axel

    2006-01-01

    A full software and hardware solution has been designed, implemented and tested for control of a small agricultural automatic tractor. The objective was to realise a user-friendly, multi-layer controller architecture for an outdoor platform. The collaborative research work was done as a part of a...... of a research project within the field of automated agriculture and precision farming....

  17. New developments in Ni/Ti multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, I.; Hoghoj, P. [Institut Max von Laue - Paul Langevin (ILL), 38 - Grenoble (France)

    1997-04-01

    It is now 20 years since super-mirrors were first used as a neutron optical element. Since then the field of multilayer neutron-optics has matured with multilayers finding their way to application in many neutron scattering instruments. However, there is still room for progress in terms of multilayer quality, performance and application. Along with work on multilayers for neutron polarisation Ni/Ti super-mirrors have been optimised. The state-of-the-art Ni/Ti super-mirror performance and the results obtained in two neutron-optics applications of Ni/Ti multilayers are presented. (author).

  18. On the Application of Inverse-Mode SiGe HBTs in RF Receivers for the Mitigation of Single-Event Transients

    Science.gov (United States)

    Song, Ickhyun; Cho, Moon-Kyu; Oakley, Michael A.; Ildefonso, Adrian; Ju, Inchan; Buchner, Stephen P.; McMorrow, Dale; Paki, Pauline; Cressler, John. D.

    2017-05-01

    Best practice in mitigation strategies for single-event transients (SETs) in radio-frequency (RF) receiver modules is investigated using a variety of integrated receivers utilizing inverse-mode silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). The receivers were designed and implemented in a 130-nm SiGe BiCMOS technology platform. In general, RF switches, low-noise amplifiers (LNAs), and downconversion mixers utilizing inverse-mode SiGe HBTs exhibit less susceptibility to SETs than conventional RF designs, in terms of transient peaks and duration, at the cost of RF performance. Under normal RF operation, the SET-hardened switch is mainly effective in peak reduction, while the LNA and the mixer exhibit reductions in transient peaks as well as transient duration.

  19. Growth and characterization of gold catalyzed SiGe nanowires and alternative metal-catalyzed Si nanowires

    Science.gov (United States)

    Potié, Alexis; Baron, Thierry; Dhalluin, Florian; Rosaz, Guillaume; Salem, Bassem; Latu-Romain, Laurence; Kogelschatz, Martin; Gentile, Pascal; Oehler, Fabrice; Montès, Laurent; Kreisel, Jens; Roussel, Hervé

    2011-12-01

    The growth of semiconductor (SC) nanowires (NW) by CVD using Au-catalyzed VLS process has been widely studied over the past few years. Among others SC, it is possible to grow pure Si or SiGe NW thanks to these techniques. Nevertheless, Au could deteriorate the electric properties of SC and the use of other metal catalysts will be mandatory if NW are to be designed for innovating electronic. First, this article's focus will be on SiGe NW's growth using Au catalyst. The authors managed to grow SiGe NW between 350 and 400°C. Ge concentration ( x) in Si1- x Ge x NW has been successfully varied by modifying the gas flow ratio: R = GeH4/(SiH4 + GeH4). Characterization (by Raman spectroscopy and XRD) revealed concentrations varying from 0.2 to 0.46 on NW grown at 375°C, with R varying from 0.05 to 0.15. Second, the results of Si NW growths by CVD using alternatives catalysts such as platinum-, palladium- and nickel-silicides are presented. This study, carried out on a LPCVD furnace, aimed at defining Si NW growth conditions when using such catalysts. Since the growth temperatures investigated are lower than the eutectic temperatures of these Si-metal alloys, VSS growth is expected and observed. Different temperatures and HCl flow rates have been tested with the aim of minimizing 2D growth which induces an important tapering of the NW. Finally, mechanical characterization of single NW has been carried out using an AFM method developed at the LTM. It consists in measuring the deflection of an AFM tip while performing approach-retract curves at various positions along the length of a cantilevered NW. This approach allows the measurement of as-grown single NW's Young modulus and spring constant, and alleviates uncertainties inherent in single point measurement.

  20. Comparative study of the luminescence of structures with Ge nanocrystals formed by dry and wet oxidation of SiGe films

    International Nuclear Information System (INIS)

    RodrIguez, A; Ortiz, M I; Sangrador, J; RodrIguez, T; Avella, M; Prieto, A C; Torres, A; Jimenez, J; Kling, A; Ballesteros, C

    2007-01-01

    The luminescence emission of structures containing Ge nanocrystals embedded in a dielectric matrix obtained by dry and wet oxidation of polycrystalline SiGe layers has been studied as a function of the oxidation time and initial SiGe layer thickness. A clear relationship between the intensity of the luminescence, the structure of the sample, the formation of Ge nanocrystals and the oxidation process parameters that allows us to select the appropriate process conditions to get the most efficient emission has been established. The evolution of the composition and thickness of the growing oxides and the remaining SiGe layer during the oxidation processes has been characterized using Raman spectroscopy, x-ray diffraction, Fourier-transform infrared spectroscopy, Rutherford backscattering spectrometry and transmission electron microscopy. For dry oxidation, the luminescence appears suddenly, regardless of the initial SiGe layer thickness, when all the Si of the SiGe has been oxidized and the remaining layer of the segregated Ge starts to be oxidized forming Ge nanocrystals. Luminescence is observed as long as Ge nanocrystals are present. For wet oxidation, the luminescence appears from the first stages of the oxidation, and is related to the formation of Ge-rich nanoclusters trapped in the mixed (Si and Ge) growing oxide. A sharp increase of the luminescence intensity for long oxidation times is also observed, due to the formation of Ge nanocrystals by the oxidation of the layer of segregated Ge. For both processes the luminescence is quenched when the oxidation time is long enough to cause the full oxidation of the Ge nanocrystals. The intensity of the luminescence in the dry oxidized samples is about ten times higher than in the wet oxidized ones for equal initial thickness of the SiGe layer

  1. X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor

    Science.gov (United States)

    2011-01-01

    For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-ray beam with a diameter of 400 nm. We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si–metal–oxide semiconductor field-effect transistor. PMID:21627099

  2. Strong room-temperature negative transconductance in an axial Si/Ge hetero-nanowire tunneling field-effect transistor

    Science.gov (United States)

    Zhang, Peng; Le, Son T.; Hou, Xiaoxiao; Zaslavsky, A.; Perea, Daniel E.; Dayeh, Shadi A.; Picraux, S. T.

    2014-08-01

    We report on room-temperature negative transconductance (NTC) in axial Si/Ge hetero-nanowire tunneling field-effect transistors. The NTC produces a current peak-to-valley ratio >45, a high value for a Si-based device. We characterize the NTC over a range of gate VG and drain VD voltages, finding that NTC persists down to VD = -50 mV. The physical mechanism responsible for the NTC is the VG-induced depletion in the p-Ge section that eventually reduces the maximum electric field that triggers the tunneling ID, as confirmed via three-dimensional (3D) technology computer-aided design simulations.

  3. EUV multilayer mirror, optical system including a multilayer mirror and method of manufacturing a multilayer mirror

    NARCIS (Netherlands)

    Huang, Qiushi; Louis, Eric; Bijkerk, Frederik; de Boer, Meint J.; von Blanckenhagen, G.

    2016-01-01

    A multilayer mirror (M) reflecting extreme ultraviolet (EUV) radiation from a first wave-length range in a EUV spectral region comprises a substrate (SUB) and a stack of layers (SL) on the substrate, the stack of layers comprising layers comprising a low index material and a high index material, the

  4. Alternative Sigma Factors SigF, SigE, and SigG Are Essential for Sporulation in Clostridium botulinum ATCC 3502

    OpenAIRE

    Kirk, David G.; Zhang, Zhen; Korkeala, Hannu; Lindström, Miia

    2014-01-01

    Clostridium botulinum produces heat-resistant endospores that may germinate and outgrow into neurotoxic cultures in foods. Sporulation is regulated by the transcription factor Spo0A and the alternative sigma factors SigF, SigE, SigG, and SigK in most spore formers studied to date. We constructed mutants of sigF, sigE, and sigG in C. botulinum ATCC 3502 and used quantitative reverse transcriptase PCR and electron microscopy to assess their expression of the sporulation pathway on transcription...

  5. Antimonide Heterostructure Nanowires - Growth, Physics and Devices

    OpenAIRE

    Borg, Mattias

    2012-01-01

    This thesis investigates the growth and application of antimonide heterostructure nanowires for low-power electronics. In the first part of the thesis, GaSb, InSb and InAsSb nanowire growth is presented, and the distinguishing features of the growth are described. It is found that the presence of Sb results in more than 50 at. % group-III concentration in the Au seed particle on top of the nanowires. It is further concluded that the effective V/III ratio inside the seed particle is reduced co...

  6. Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology

    Science.gov (United States)

    Reboh, S.; Coquand, R.; Barraud, S.; Loubet, N.; Bernier, N.; Audoit, G.; Rouviere, J.-L.; Augendre, E.; Li, J.; Gaudiello, J.; Gambacorti, N.; Yamashita, T.; Faynot, O.

    2018-01-01

    Pre-strained fin-patterned Si/SiGe multilayer structures for sub-7 nm stacked gate-all-around Si-technology transistors that have been grown onto bulk-Si, virtually relaxed SiGe, strained Silicon-On-Insulator, and compressive SiGe-On-Insulator were investigated. From strain maps with a nanometer spatial resolution obtained by transmission electron microscopy, we developed 3D quantitative numerical models describing the mechanics of the structures. While elastic interactions describe every other system reported here, the patterning on the compressive SiGe-On-Insulator substrate that is fabricated by Ge-condensation results in relaxation along the semiconductor/insulator interface, revealing a latent plasticity mechanism. As a consequence, Si layers with a uniaxial stress of 1.4 GPa are obtained, bringing fresh perspectives for strain engineering in advanced devices. These findings could be extended to other semiconductor technologies.

  7. Van der Waals Epitaxy of GaSe/Graphene Heterostructure: Electronic and Interfacial Properties.

    Science.gov (United States)

    Ben Aziza, Zeineb; Henck, Hugo; Pierucci, Debora; Silly, Mathieu G; Lhuillier, Emmanuel; Patriarche, Gilles; Sirotti, Fausto; Eddrief, Mahmoud; Ouerghi, Abdelkarim

    2016-10-07

    Stacking two-dimensional materials in so-called van der Waals (vdW) heterostructures, like the combination of GaSe and graphene, provides the ability to obtain hybrid systems which are suitable to design optoelectronic devices. Here, we report the structural and electronic properties of the direct growth of multilayered GaSe by Molecular beam Epitaxy (MBE) on graphene. Reflection high-energy electron diffraction (RHEED) images exhibited sharp streaky features indicative of high quality GaSe layer produced via a vdW epitaxy. Micro-Raman spectroscopy showed that, after the vdW hetero-interface formation, the Raman signature of pristine graphene is preserved. However, the GaSe film tuned the charge density of graphene layer by shifting the Dirac point by about 80 meV toward lower binding energies, attesting an electron transfer from graphene to GaSe. Angle-resolved photoemission spectroscopy (ARPES) measurements showed that the maximum of the valence band of few layers of GaSe are located at the Γ point at a binding energy of about -0.73 eV relatively to the Fermi level (p-type doping). From the ARPES measurements, a hole effective mass defined along the ΓM direction and equal to about m*/m0 = -1.1 was determined. By coupling the ARPES data with high resolution X-ray photoemission spectroscopy (HR-XPS) measurements, the Schottky interface barrier height was estimated to be 1.2 eV. These findings allow deeper understanding of the interlayer interactions and the electronic structure of GaSe/graphene vdW heterostructure.

  8. Highly Confined Electronic and Ionic Conduction in Oxide Heterostructures

    DEFF Research Database (Denmark)

    Pryds, Nini

    2015-01-01

    The conductance confined at the interface of complex oxide heterostructures provides new opportunities to explore nanoelectronic as well as nanoionic devices. In this talk I will present our recent results both on ionic and electronic conductivity at different heterostructures systems. In the first...... unattainable for Bi2O3-based materials, is achieved[1]. These confined heterostructures provide a playground not only for new high ionic conductivity phenomena that are sufficiently stable but also uncover a large variety of possible technological perspectives. At the second part, I will discuss and show our...

  9. Terahertz luminescence of GaAs based on heterostructures with quantum wells at optical excitation of donors

    International Nuclear Information System (INIS)

    Bekin, N.A.; Zhukavin, R.Kh.; Kovalevskij, K.A.; Pavlov, S.G.; Shastin, V.N.; Zvonkov, B.N.; Uskova, E.A.

    2005-01-01

    Terahertz spontaneous emission (∼ 3-3.5 THz) based on 2D-continuum-shallow donor (Si) states transitions has been investigated from both GaAs/InGaAs:Si and GaAs/InGaAsP:Si selectively doped heterostructures under CO 2 laser excitation at the liquid helium temperature. It is shown that the population inversion and the amplification with the coefficient up to 100-300 cm -1 per active layer can be realized for the planar doping level N D ≅ 10 11 cm -2 in multilayer structures with 50 periods of quantum wells under the pump flux density 10 23 quant/cm 2 s [ru

  10. Optical limiting performance of a GaAs/AlAs heterostructure microcavity in the near-infrared.

    Science.gov (United States)

    Ryzhov, A A

    2017-07-20

    A multilayer GaAs/AlAs heterostructure forming a Fabry-Perot microcavity with a narrow resonance at 1.1 μm was produced by molecular-beam epitaxy. Under nanosecond pulsed laser radiation, a blueshift of the resonant line, associated with a photo-induced negative change in refractive index in GaAs, was experimentally registered by using an optical parametric oscillator. The spectral shift was accompanied by a reduction in peak transmittance, associated with nonlinear intracavity absorption. Such a cavity can be used as an optical limiter at the resonant wavelength when both the spectral shift and the transmittance reduction contribute to the limiting effect. An exceptionally low limiting threshold of about 1  mJ/cm 2 was observed in the experiment.

  11. Photoresponse of Natural van der Waals Heterostructures.

    Science.gov (United States)

    Ray, Kyle; Yore, Alexander E; Mou, Tong; Jha, Sauraj; Smithe, Kirby K H; Wang, Bin; Pop, Eric; Newaz, A K M

    2017-06-27

    Van der Waals heterostructures consisting of two-dimensional materials offer a platform to obtain materials by design and are very attractive owing to unique electronic states. Research on 2D van der Waals heterostructures (vdWH) has so far been focused on fabricating individually stacked atomically thin unary or binary crystals. Such systems include graphene, hexagonal boron nitride, and members of the transition metal dichalcogenide family. Here we present our experimental study of the optoelectronic properties of a naturally occurring vdWH, known as franckeite, which is a complex layered crystal composed of lead, tin, antimony, iron, and sulfur. We present here that thin film franckeite (60 nm power-resolved and temperature-resolved photocurrent measurements reveal that the photocarrier generation and recombination are dominated by continuously distributed trap states within the band gap. To understand wavelength-resolved photocurrent, we also calculated the optical absorption properties via density functional theory. Finally, we have shown that the device has a fast photoresponse with a rise time as fast as ∼1 ms. Our study provides a fundamental understanding of the optoelectronic behavior in a complex naturally occurring vdWH, and may pave an avenue toward developing nanoscale optoelectronic devices with tailored properties.

  12. Anomalous magnetoresistance in Fibonacci multilayers.

    Energy Technology Data Exchange (ETDEWEB)

    Machado, L. D.; Bezerra, C. G.; Correa, M. A.; Chesman, C.; Pearson, J. E.; Hoffmann, A. (Materials Science Division); (Universidade Federal do Rio Grande do Norte)

    2012-01-01

    We theoretically investigated magnetoresistance curves in quasiperiodic magnetic multilayers for two different growth directions, namely, [110] and [100]. We considered identical ferromagnetic layers separated by nonmagnetic layers with two different thicknesses chosen based on the Fibonacci sequence. Using parameters for Fe/Cr multilayers, four terms were included in our description of the magnetic energy: Zeeman, cubic anisotropy, bilinear coupling, and biquadratic coupling. The minimum energy was determined by the gradient method and the equilibrium magnetization directions found were used to calculate magnetoresistance curves. By choosing spacers with a thickness such that biquadratic coupling is stronger than bilinear coupling, unusual behaviors for the magnetoresistance were observed: (i) for the [110] case, there is a different behavior for structures based on even and odd Fibonacci generations, and, more interesting, (ii) for the [100] case, we found magnetic field ranges for which the magnetoresistance increases with magnetic field.

  13. Flexible Low-power SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout

    Science.gov (United States)

    England, Troy; Lilly, Michael; Curry, Matthew; Carr, Stephen; Carroll, Malcolm

    Fast, low-power quantum state readout is one of many challenges facing quantum information processing. Single electron transistors (SETs) are potentially fast, sensitive detectors for performing spin readout of electrons bound to Si:P donors. From a circuit perspective, however, their output impedance and nonlinear conductance are ill suited to drive the parasitic capacitance of coaxial conductors used in cryogenic environments, necessitating a cryogenic amplification stage. We will introduce two new amplifier topologies that provide excellent gain versus power tradeoffs using silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). The AC HBT allows in-situ adjustment of power dissipation during an experiment and can provide gain in the millikelvin temperature regime while dissipating less than 500 nW. The AC Current Amplifier maximizes gain at nearly 800 A/A. We will also show results of using these amplifiers with SETs at 4 K. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000. Flexible Low-power SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout.

  14. Composite films of highly ordered Si nanowires embedded in SiGe0.3 for thermoelectric applications

    Science.gov (United States)

    Kikuchi, Akiou; Yao, Akifumi; Mori, Isamu; Ono, Takahito; Samukawa, Seiji

    2017-10-01

    We fabricated a high-density array of silicon nanowires (SiNWs) with a diameter of 10 nm embedded in silicon germanium (SiGe0.3) to give a composite thin film for thermoelectric device applications. The SiNW array was first fabricated by bio-template mask and neutral beam etching techniques. The SiNW array was then embedded in SiGe0.3 by thermal chemical vapor deposition. The cross-plane thermal conductivity of the SiNW-SiGe0.3 composite film with a thickness of 100 nm was 3.5 ± 0.3 W/mK in the temperature range of 300-350 K. Moreover, the temperature dependences of the in-plane electrical conductivity and in-plane Seebeck coefficient of the SiNW-SiGe0.3 composite were evaluated. The fabricated SiNW-SiGe0.3 composite film displayed a maximum power factor of 1 × 103 W/m K2 (a Seebeck coefficient of 4.8 × 103 μV/K and an electrical conductivity of 4.4 × 103 S/m) at 873 K. The present high-density SiNW array structure represents a new route to realize practical thermoelectric devices using mature Si processes without any rare metals.

  15. Constructing multilayers with absorbing materials

    OpenAIRE

    Larruquert, Juan Ignacio; Vidal-Dasilva, M.; García-Cortés, S.; Fernández Perea, Mónica; Méndez, José Antonio; Aznárez, José Antonio

    2010-01-01

    The strong absorption of materials in the extreme ultraviolet (EUV) above ~50 nm has precluded the development of efficient coatings. The development of novel coatings with improved EUV performance is presented. An extensive research was performed on the search and characterization of materials with moderate absorption, such as various lanthanides. Based on this research, novel multilayers based on Yb, Al, and SiO have been developed with a narrowband performance in the 50-92 nm range. Furthe...

  16. Mathematical Formulation of Multilayer Networks

    Science.gov (United States)

    De Domenico, Manlio; Solé-Ribalta, Albert; Cozzo, Emanuele; Kivelä, Mikko; Moreno, Yamir; Porter, Mason A.; Gómez, Sergio; Arenas, Alex

    2013-10-01

    A network representation is useful for describing the structure of a large variety of complex systems. However, most real and engineered systems have multiple subsystems and layers of connectivity, and the data produced by such systems are very rich. Achieving a deep understanding of such systems necessitates generalizing “traditional” network theory, and the newfound deluge of data now makes it possible to test increasingly general frameworks for the study of networks. In particular, although adjacency matrices are useful to describe traditional single-layer networks, such a representation is insufficient for the analysis and description of multiplex and time-dependent networks. One must therefore develop a more general mathematical framework to cope with the challenges posed by multilayer complex systems. In this paper, we introduce a tensorial framework to study multilayer networks, and we discuss the generalization of several important network descriptors and dynamical processes—including degree centrality, clustering coefficients, eigenvector centrality, modularity, von Neumann entropy, and diffusion—for this framework. We examine the impact of different choices in constructing these generalizations, and we illustrate how to obtain known results for the special cases of single-layer and multiplex networks. Our tensorial approach will be helpful for tackling pressing problems in multilayer complex systems, such as inferring who is influencing whom (and by which media) in multichannel social networks and developing routing techniques for multimodal transportation systems.

  17. Effect of graphene grains size on the microwave electromagnetic shielding effectiveness of graphene/polymer multilayers

    Science.gov (United States)

    Kuzhir, Polina P.; Paddubskaya, Alesia G.; Volynets, Nadzeya I.; Batrakov, Konstantin G.; Maksimenko, Sergey A.; Golubeva, Elena N.; Valusis, Gintaras; Kaplas, Tommi; Reckinger, Nicolas; Lobet, Michael; Lambin, Philippe

    2017-07-01

    The influence of chemical vapor deposition (CVD) graphene grain size on the electromagnetic (EM) shielding performance of graphene/polymethyl methacrylate (PMMA) multilayers in Ka-band was studied both experimentally and theoretically. We found that increasing the average graphene grain size from 20 to 400 μm does not change the EM properties of heterostructures consisting of graphene layers sandwiched between submicron thick PMMA spacers. The independence of EM interference shielding effectiveness on the graphene grain size between 20 and 400 μm allows one to use cheaper (or more convenient regimes of CVD) graphene samples with low crystallinity and small grain size in the development of new graphene-based passive EM devices operated at high frequencies.

  18. Multilayer Radar Absorbing Non-Woven Material

    Science.gov (United States)

    Dedov, A. V.; Nazarov, V. G.

    2016-06-01

    We study the electrical properties of multilayer radar absorbing materials obtained by adding nonwoven sheets of dielectric fibers with an intermediate layer of electrically conductive carbon fibers. Multilayer materials that absorb electromagnetic radiation in a wide frequency range are obtained by varying the content of the carbon fibers. The carbon-fiber content dependent mechanism of absorption of electromagnetic radiation by sheets and multilayer materials is considered.

  19. A 6-bit, 500-MS/s current-steering DAC in SiGe BiCMOS technology and considerations for SFDR performance

    CSIR Research Space (South Africa)

    Reddy, Reeshen

    2015-04-01

    Full Text Available Journal 46(2015)310–319 A 6-bit, 500-MS/s current-steering DAC in SiGe BiCMOS technology and considerations for SFDR performance Reeshen Reddy a,b,n, Saurabh Sinha b,c,1 a Council for Scientific and Industrial Research, Meiring Naudé Road, Brummeria...

  20. Variable electronic properties of lateral phosphorene-graphene heterostructures.

    Science.gov (United States)

    Tian, Xiaoqing; Liu, Lin; Du, Yu; Gu, Juan; Xu, Jian-Bin; Yakobson, Boris I

    2015-12-21

    Phosphorene and graphene have a tiny lattice mismatch along the armchair direction, which can result in an atomically sharp in-plane interface. The electronic properties of the lateral heterostructures of phosphorene/graphene are investigated by the first-principles method. Here, we demonstrate that the electronic properties of this type of heterostructure can be highly tunable by the quantum size effects and the externally applied electric field (Eext). At strong Eext, Dirac Fermions can be developed with Fermi velocities around one order smaller than that of graphene. Undoped and hydrogen doped configurations demonstrate three drastically different electronic phases, which reveal the strongly tunable potential of this type of heterostructure. Graphene is a naturally better electrode for phosphorene. The transport properties of two-probe devices of graphene/phosphorene/graphene exhibit tunnelling transport characteristics. Given these results, it is expected that in-plane heterostructures of phosphorene/graphene will present abundant opportunities for applications in optoelectronic and electronic devices.

  1. Quantum dot nanoscale heterostructures for solar energy conversion.

    Science.gov (United States)

    Selinsky, Rachel S; Ding, Qi; Faber, Matthew S; Wright, John C; Jin, Song

    2013-04-07

    Quantum dot nanoscale semiconductor heterostructures (QDHs) are a class of materials potentially useful for integration into solar energy conversion devices. However, realizing the potential of these heterostructured systems requires the ability to identify and synthesize heterostructures with suitably designed materials, controlled size and morphology of each component, and structural control over their shared interface. In this review, we will present the case for the utility and advantages of chemically synthesized QDHs for solar energy conversion, beginning with an overview of various methods of heterostructured material synthesis and a survey of heretofore reported materials systems. The fundamental charge transfer properties of the resulting materials combinations and their basic design principles will be outlined. Finally, we will discuss representative solar photovoltaic and photoelectrochemical devices employing QDHs (including quantum dot sensitized solar cells, or QDSSCs) and examine how QDH synthesis and design impacts their performance.

  2. Organic heterostructures based on arylenevinylene oligomers deposited by MAPLE

    Czech Academy of Sciences Publication Activity Database

    Socol, M.; Preda, N.; Vacareanu, L.; Grigoras, M.; Socol, G.; Mihailescu, I. N.; Stanculescu, F.; Jelínek, Miroslav; Stanculescu, A.; Stoicanescu, M.

    2014-01-01

    Roč. 302, May (2014), s. 216-222 ISSN 0169-4332 Institutional support: RVO:68378271 Keywords : organic heterostructures * MAPLE * oligomer * optoelectronica Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.711, year: 2014

  3. Magnetic Heterostructures Advances and Perspectives in Spinstructures and Spintransport

    CERN Document Server

    Bader, Samuel D

    2008-01-01

    Magnetic heterostructures constitute an important field in magnetism and nanotechnology, which has developed over the past fifteen years due to important advances in epitaxial- growth techniques and lithographic processes. Magnetic heterostructures combine different physical properties which do not exist in nature. Examples are semiconductors/ferromagnets, superconductors/ferromagnets, and ferromagnets/antiferromagnets. These combinations display rich and novel physical properties different from those that exit in any single one of them. Interlayer exchange coupling, exchange bias, proximity effects, giant magneto-resistance, tunneling magneto-resistance, spininjection and spintransport are examples of new physical phenomena that rely on the combination of different materials layers. Since the literature on magnetic heterostructures is widely spread and highly specialized, the situation calls for a book that provides an overview of the basics and the state of the art of magnetic heterostructures. These contri...

  4. Ge/Si core/multi shell heterostructure FETs

    Energy Technology Data Exchange (ETDEWEB)

    Picraux, Samuel T [Los Alamos National Laboratory; Dayeh, Shadi A [Los Alamos National Laboratory

    2010-01-01

    Concentric heterostructured materials provide numerous design opportunities for engineering strain and interfaces, as well as tailoring energy band-edge combinations for optimal device performance. Key to the realization of such novel device concepts is the complete understanding and full control over their growth, crystal structure, and hetero-epitaxy. We report here on a new route for synthesizing Ge/Si core/multi-shell heterostructure nanowires that eliminate Au seed diffusion on the nanowire sidewalls by engineering the interface energy density difference. We show that such control over core/shell synthesis enable experimental realization of heterostructure FET devices beyond those available in the literature with enhanced transport characteristics. We provide a side-by-side comparison on the transport properties of Ge/Si core/multi-shell nanowires grown with and without Au diffusion and demonstrate heterostructure FETs with drive currents that are {approx} 2X higher than record results for p-type FETs.

  5. Quantum engineering of transistors based on 2D materials heterostructures

    Science.gov (United States)

    Iannaccone, Giuseppe; Bonaccorso, Francesco; Colombo, Luigi; Fiori, Gianluca

    2018-03-01

    Quantum engineering entails atom-by-atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are we to the possibility of the practical realization of next-generation atomically thin transistors? In this Perspective, we analyse the outlook and the challenges of quantum-engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability. Transistors based on lateral heterostructures emerge as the most promising option from a performance point of view, even if heterostructure formation and control are in the initial technology development stage.

  6. Picosecond time resolved cathodoluminescence to study semiconductor materials and heterostructures

    OpenAIRE

    Sonderegger, Samuel

    2007-01-01

    A large number of characterization tools for semiconductor based heterostructures are available nowadays. Most of these techniques deliver high temporal resolution (down to hundreds of femtoseconds) or good spatial resolution (down to sub nanometer resolution), but not both simultaneously. However, to get a complete picture of carrier recombination and diffusion processes in heterostructures, one needs a spectroscopic tool which simultaneously yields high temporal and spatial resolutions. The...

  7. Picosecond time resolved cathodoluminescence to study semiconductor materials and heterostructures

    OpenAIRE

    Sonderegger, Samuel; Ganière, Jean-Daniel

    2008-01-01

    A large number of characterization tools for semiconductor based heterostructures are available nowadays. Most of these techniques deliver high temporal resolution (down to hundreds of femtoseconds) or good spatial resolution (down to sub nanometer resolution), but not both simultaneously. However, to get a complete picture of carrier recombination and diffusion processes in heterostructures, one needs a spectroscopic tool which simultaneously yields high temporal and spatial resolutions. The...

  8. Magnetic depth profiling of Fe/Au multilayer using neutron ...

    Indian Academy of Sciences (India)

    Au multilayer sample for characterizing the layer structure and magnetic moment density profile. Fe/Au multilayer shows strong spin-dependent scattering at interfaces, making it a prospective GMR material. Fe/Au multilayer with bilayer ...

  9. Oxidation kinetics of Si and SiGe by dry rapid thermal oxidation, in-situ steam generation oxidation and dry furnace oxidation

    Science.gov (United States)

    Rozé, Fabien; Gourhant, Olivier; Blanquet, Elisabeth; Bertin, François; Juhel, Marc; Abbate, Francesco; Pribat, Clément; Duru, Romain

    2017-06-01

    The fabrication of ultrathin compressively strained SiGe-On-Insulator layers by the condensation technique is likely a key milestone towards low-power and high performances FD-SOI logic devices. However, the SiGe condensation technique still requires challenges to be solved for an optimized use in an industrial environment. SiGe oxidation kinetics, upon which the condensation technique is founded, has still not reached a consensus in spite of various studies which gave insights into the matter. This paper aims to bridge the gaps between these studies by covering various oxidation processes relevant to today's technological needs with a new and quantitative analysis methodology. We thus address oxidation kinetics of SiGe with three Ge concentrations (0%, 10%, and 30%) by means of dry rapid thermal oxidation, in-situ steam generation oxidation, and dry furnace oxidation. Oxide thicknesses in the 50 Å to 150 Å range grown with oxidation temperatures between 850 and 1100 °C were targeted. The present work shows first that for all investigated processes, oxidation follows a parabolic regime even for thin oxides, which indicates a diffusion-limited oxidation regime. We also observe that, for all investigated processes, the SiGe oxidation rate is systematically higher than that of Si. The amplitude of the variation of oxidation kinetics of SiGe with respect to Si is found to be strongly dependent on the process type. Second, a new quantitative analysis methodology of oxidation kinetics is introduced. This methodology allows us to highlight the dependence of oxidation kinetics on the Ge concentration at the oxidation interface, which is modulated by the pile-up mechanism. Our results show that the oxidation rate increases with the Ge concentration at the oxidation interface.

  10. Alternative sigma factors SigF, SigE, and SigG are essential for sporulation in Clostridium botulinum ATCC 3502.

    Science.gov (United States)

    Kirk, David G; Zhang, Zhen; Korkeala, Hannu; Lindström, Miia

    2014-08-01

    Clostridium botulinum produces heat-resistant endospores that may germinate and outgrow into neurotoxic cultures in foods. Sporulation is regulated by the transcription factor Spo0A and the alternative sigma factors SigF, SigE, SigG, and SigK in most spore formers studied to date. We constructed mutants of sigF, sigE, and sigG in C. botulinum ATCC 3502 and used quantitative reverse transcriptase PCR and electron microscopy to assess their expression of the sporulation pathway on transcriptional and morphological levels. In all three mutants the expression of spo0A was disrupted. The sigF and sigE mutants failed to induce sigG and sigK beyond exponential-phase levels and halted sporulation during asymmetric cell division. In the sigG mutant, peak transcription of sigE was delayed and sigK levels remained lower than that in the parent strain. The sigG mutant forespore was engulfed by the mother cell and possessed a spore coat but no peptidoglycan cortex. The findings suggest that SigF and SigE of C. botulinum ATCC 3502 are essential for early sporulation and late-stage induction of sigK, whereas SigG is essential for spore cortex formation but not for coat formation, as opposed to previous observations in B. subtilis sigG mutants. Our findings add to a growing body of evidence that regulation of sporulation in C. botulinum ATCC 3502, and among the clostridia, differs from the B. subtilis model. Copyright © 2014, American Society for Microbiology. All Rights Reserved.

  11. Quantum and field effects of oxide heterostructures

    DEFF Research Database (Denmark)

    Trier, Felix

    . In these multi-plexed devices, several inputs aretranslated into several outputs through the multiple physical functionalities.A highly prominent example of such an oxide interface is the one between LaAlO3 and SrTiO3. Although both LaAlO3 and SrTiO3 in the bulk are electrically insulating and non...... aspects of sample preparation will initially be covered. Here, the growth of amorphous-LaAlO3 on SrTiO3 will be addressed in a modified pulsed laser deposition setup. This is followed by an investigation of two high-electron mobility interfaces in SrTiO3-based heterostructures. Specifically...

  12. Rashba-Edelstein Magnetoresistance in Metallic Heterostructures.

    Science.gov (United States)

    Nakayama, Hiroyasu; Kanno, Yusuke; An, Hongyu; Tashiro, Takaharu; Haku, Satoshi; Nomura, Akiyo; Ando, Kazuya

    2016-09-09

    We report the observation of magnetoresistance originating from Rashba spin-orbit coupling (SOC) in a metallic heterostructure: the Rashba-Edelstein (RE) magnetoresistance. We show that the simultaneous action of the direct and inverse RE effects in a Bi/Ag/CoFeB trilayer couples current-induced spin accumulation to the electric resistance. The electric resistance changes with the magnetic-field angle, reminiscent of the spin Hall magnetoresistance, despite the fact that bulk SOC is not responsible for the magnetoresistance. We further found that, even when the magnetization is saturated, the resistance increases with increasing the magnetic-field strength, which is attributed to the Hanle magnetoresistance in this system.

  13. Method of making coherent multilayer crystals

    Science.gov (United States)

    Schuller, Ivan K.; Falco, Charles M.

    1984-01-01

    A new material consisting of a coherent multilayer crystal of two or more elements where each layer is composed of a single element. Each layer may vary in thickness from about 2 .ANG. to 2500 .ANG.. The multilayer crystals are prepared by sputter deposition under conditions which slow the sputtered atoms to near substrate temperatures before they contact the substrate.

  14. Langmuir Blodgett multilayers and related nanostructures

    Indian Academy of Sciences (India)

    S S Major, S S Talwar and R S Srinivasa for 50 mol% CdA or more (not shown here) the scissoring band doublet dominates and resembles the features associated with pure CdA multilayer. Figure 5 shows the corresponding X-ray reflectivity scans of these multilayers showing third and higher order Bragg reflections.

  15. Robust giant magnetoresistive effect type multilayer sensor

    NARCIS (Netherlands)

    Lenssen, K.M.H.; Kuiper, A.E.T.; Roozeboom, F.

    2002-01-01

    A robust Giant Magneto Resistive effect type multilayer sensor comprising a free and a pinned ferromagnetic layer, which can withstand high temperatures and strong magnetic fields as required in automotive applications. The GMR multi-layer has an asymmetric magneto-resistive curve and enables

  16. Multilayer Graphene for Waveguide Terahertz Modulator

    DEFF Research Database (Denmark)

    Khromova, I.; Andryieuski, Andrei; Lavrinenko, Andrei

    2014-01-01

    We study terahertz to infrared electromagnetic properties of multilayer graphene/dielectric artificial medium and present a novel concept of terahertz modulation at midinfrared wavelengths. This approach allows the realization of high-speed electrically controllable terahertz modulators based...... on hollow waveguide sections filled with multilayer graphene....

  17. Effect of a static magnetic field on silicon transport in liquid phase diffusion growth of SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Armour, N.; Dost, S. [Crystal Growth Laboratory, University of Victoria, Victoria, BC V8W 3P6 (Canada)

    2010-03-15

    Liquid phase diffusion experiments have been performed without and with the application of a 0.4 T static magnetic field using a three-zone DC furnace system. SiGe crystals were grown from the germanium side for a period of 72 h. Experiments have led to the growth of single crystal sections varying from 0 to 10 mm thicknesses. Examination of the processed samples (single and polycrystalline sections) has shown that the effect of the applied static magnetic field is significant. It alters the temperature distribution in the system, reduces mass transport in the melt, and leads to a much lower growth rate. The initial curved growth interface was slightly flattened under the effect of magnetic field. There were no growth striations in the single crystal sections of the samples. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Silicon transport under rotating and combined magnetic fields in liquid phase diffusion growth of SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Armour, N.; Dost, S. [Crystal Growth Laboratory, University of Victoria, Victoria, BC, V8W 3P6 (Canada)

    2010-04-15

    The effect of applied rotating and combined (rotating and static) magnetic fields on silicon transport during the liquid phase diffusion growth of SiGe was experimentally studied. 72-hour growth periods produced some single crystal sections. Single and polycrystalline sections of the processed samples were examined for silicon composition. Results show that the application of a rotating magnetic field enhances silicon transport in the melt. It also has a slight positive effect on flattening the initial growth interface. For comparison, growth experiments were also conducted under combined (rotating and static) magnetic fields. The processed samples revealed that the addition of static field altered the thermal characteristics of the system significantly and led to a complete melt back of the germanium seed. Silicon transport in the melt was also enhanced under combined fields compared with experiments with no magnetic field. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Power SiGe Heterojunction Bipolar Transistors (HBTs) Fabricated by Fully Self-Aligned Double Mesa Technology

    Science.gov (United States)

    Lu, Liang-Hung; Mohammadi, Saeed; Ma, Zhen-Qiang; Ponchak, George E.; Alterovitz, Samuel A.; Strohm, Karl M.; Luy, Johann-Friedrich; Downey, Alan (Technical Monitor)

    2001-01-01

    Multifinger SiGe HBTs have been fabricated using a novel fully self-aligned double-mesa technology. With the novel process technology, a common-emitter 2x2x30 sq micrometer device exhibits high maximum oscillating frequency (f(sub max)) and cut-off frequency (f(sub T)) of 78 and 37 GHz, respectively. In class-A operation, a multifinger device with l0x2x30 sq micrometer emitter is expected to provide an output power of 25.6 dBm with a gain of 10 dB and a maximum power added efficiency (PAE) of 30.33% at 8 GHz.

  20. Simulation of thermal stress and buckling instability in Si/Ge and Ge/Si core/shell nanowires.

    Science.gov (United States)

    Das, Suvankar; Moitra, Amitava; Bhattacharya, Mishreyee; Dutta, Amlan

    2015-01-01

    The present study employs the method of atomistic simulation to estimate the thermal stress experienced by Si/Ge and Ge/Si, ultrathin, core/shell nanowires with fixed ends. The underlying technique involves the computation of Young's modulus and the linear coefficient of thermal expansion through separate simulations. These two material parameters are combined to obtain the thermal stress on the nanowires. In addition, the thermally induced stress is perceived in the context of buckling instability. The analysis provides a trade-off between the geometrical and operational parameters of the nanostructures. The proposed methodology can be extended to other materials and structures and helps with the prediction of the conditions under which a nanowire-based device might possibly fail due to elastic instability.

  1. Unifying first-principles theoretical predictions and experimental measurements of size effects in thermal transport in SiGe alloys

    Science.gov (United States)

    Huberman, Samuel; Chiloyan, Vazrik; Duncan, Ryan A.; Zeng, Lingping; Jia, Roger; Maznev, Alexei A.; Fitzgerald, Eugene A.; Nelson, Keith A.; Chen, Gang

    2017-10-01

    We demonstrate the agreement between first-principles calculations and experimental measurements of size effects in thermal transport in SiGe alloys without fitting parameters. Transient thermal grating (TTG) is used to measure the effect of the grating period on the temperature decay. The virtual crystal approximation under the density-functional-theory framework combined with impurity scattering is used to determine the phonon properties for the exact alloy composition of the measured samples. With these properties, classical size effects are calculated for the experimental geometry of reflection mode TTG using the recently developed variational solution to the phonon Boltzmann transport equation, which is verified against established Monte Carlo simulations. We find agreement between theoretical predictions and experimental measurements in the reduction of thermal conductivity (as much as fourfold of the bulk value) across grating periods spanning one order of magnitude. This paper provides a framework for the study of size effects in thermal transport in opaque materials.

  2. Figure correction of multilayer coated optics

    Science.gov (United States)

    Chapman; Henry N. , Taylor; John S.

    2010-02-16

    A process is provided for producing near-perfect optical surfaces, for EUV and soft-x-ray optics. The method involves polishing or otherwise figuring the multilayer coating that has been deposited on an optical substrate, in order to correct for errors in the figure of the substrate and coating. A method such as ion-beam milling is used to remove material from the multilayer coating by an amount that varies in a specified way across the substrate. The phase of the EUV light that is reflected from the multilayer will be affected by the amount of multilayer material removed, but this effect will be reduced by a factor of 1-n as compared with height variations of the substrate, where n is the average refractive index of the multilayer.

  3. Multilayer Nanoporous Graphene Membranes for Water Desalination.

    Science.gov (United States)

    Cohen-Tanugi, David; Lin, Li-Chiang; Grossman, Jeffrey C

    2016-02-10

    While single-layer nanoporous graphene (NPG) has shown promise as a reverse osmosis (RO) desalination membrane, multilayer graphene membranes can be synthesized more economically than the single-layer material. In this work, we build upon the knowledge gained to date toward single-layer graphene to explore how multilayer NPG might serve as a RO membrane in water desalination using classical molecular dynamic simulations. We show that, while multilayer NPG exhibits similarly promising desalination properties to single-layer membranes, their separation performance can be designed by manipulating various configurational variables in the multilayer case. This work establishes an atomic-level understanding of the effects of additional NPG layers, layer separation, and pore alignment on desalination performance, providing useful guidelines for the design of multilayer NPG membranes.

  4. Investigation of high mobility pseudomorphic SiGe p-channels in Si MOSFETS at low and high electric fields

    International Nuclear Information System (INIS)

    Palmer, Martin John

    2001-01-01

    Silicon Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) for high speed, high current applications are rapidly approaching the physical and financial limits of the technology. This opens opportunities for the incorporation of materials with intrinsically better transport characteristics. An alloy of silicon and germanium is one such material that is gaining much recognition as the active component of MOSFETs and as the secondary structures (such as the gate electrode). This work examines a batch of buried channel Si 0.64 Ge 0.36 p-MOSFETs, with a minimum effective length of 0.35 μm, under different bias conditions and at different temperatures. High current and transconductance enhancements are apparent at long gate lengths. The carrier mobility is up to a factor of 2.5 times that of silicon at room temperature and 7.5 times at 4 K. A clear trend of decreasing peak mobility with decreasing silicon cap thickness is evident. Simulations show that scattering caused by the roughness of the SiO 2 /Si interface dominates, rather than alloy scattering or Si/SiGe roughness, even for a buried channel. This scattering increases with the proximity of the carriers to the interface. An increase of interface trap density with decreasing cap thickness, demonstrates that segregated germanium exists some distance into the cap and interferes with the oxidation process. This will increase scattering through increased SiO 2 /Si roughness and increased trapped charge. The short channel, high field results are comparable or slightly worse than those of silicon due to lower saturation drift velocity. However, fitting to a drift-diffusion model shows an apparent increase in saturation velocity for short channels, especially at low temperatures. This effect correlates with the low field mobility and is greater for devices containing SiGe. This is an indication of velocity overshoot, which may enhance the performance of SiGe MOSFETs at deep submicron gate lengths. (author)

  5. Simulating characteristics of Si/Ge tandem monolithic solar cell with Si1-xGex buffer layer

    Directory of Open Access Journals (Sweden)

    Gnilenko A. B.

    2015-12-01

    Full Text Available In spite of many efforts to propose new semiconductor materials and sophisticated constructions of solar cells, crystalline silicone remains the main photovoltaic material widely used up to now. There are various methods to enhance the efficiency of silicone solar cells. One of them is to combine silicone with an additional semiconductor material with the different bandgap to form a tandem construction. For example, the germanium sub-cell used as the bottom cascade for the silicone sub-cell in the tandem monolithic solar cell makes it possible to utilize the "red" sub-band of solar spectra increasing overall solar cell efficiency. The problem of the 4.2% mismatch in lattice constant between Si and Ge can be resolved in such a case by the use of SiGe buffer layer. In the paper the results of the computer simulation for Si/Ge tandem monolithic solar cell with Si1-xGex buffer layer are presented. In the solar cell under consideration, the step graded Si1-xGex buffer layer is located between the top silicone and the bottom germanium cascades to reduce the threading dislocation density in mismatched materials. The cascades are commutated by the use of the germanium tunnel diode between the bottom sub-cell and the buffer layer. For the solar cell modeling, the physically-based device simulator ATLAS of Silvaco TCAD software is employed to predict the electrical behavior of the semiconductor structure and to provide a deep insight into the internal physical processes. The voltage-current characteristic, photovoltaic parameters and the distribution of basic physical values are obtained for the investigated tandem solar cell. The influence of layer thicknesses on the photovoltaic parameters is studied. The calculated efficiency of the tandem solar cell reaches 13% which is a quarter more than the efficiency of a simple silicone solar cell with the same constructive parameters and under the same illumination conditions.

  6. Photovoltaic effect in an indium-tin-oxide/ZnO/BiFeO3/Pt heterostructure

    International Nuclear Information System (INIS)

    Fan, Zhen; Yao, Kui; Wang, John

    2014-01-01

    We have studied the photovoltaic effect in a metal/semiconductor/ferroelectric/metal heterostructure of In 2 O 3 -SnO 2 /ZnO/BiFeO 3 /Pt (ITO/ZnO/BFO/Pt) multilayer thin films. The heterolayered structure shows a short-circuit current density (J sc ) of 340 μA/cm 2 and an energy conversion efficiency of up to 0.33% under blue monochromatic illumination. The photovoltaic mechanism, specifically in terms of the major generation site of photo-excited electron-hole (e-h) pairs and the driving forces for the separation of e-h pairs, is clarified. The significant increase in photocurrent of the ITO/ZnO/BFO/Pt compared to that of ITO/BFO/Pt is attributed to the abundant e-h pairs generated from ZnO. Ultraviolet photoelectron spectroscopy reveals the energy band alignment of ITO/ZnO/BFO/Pt, where a Schottky barrier and an n + -n junction are formed at the BFO/Pt and ZnO/BFO interfaces, respectively. Therefore, two built-in fields developed at the two interfaces are constructively responsible for the separation and transport of photo-excited e-h pairs.

  7. Probing dynamic behavior of electric fields and band diagrams in complex semiconductor heterostructures

    Science.gov (United States)

    Turkulets, Yury; Shalish, Ilan

    2018-01-01

    Modern bandgap engineered electronic devices are typically made of multi-semiconductor multi-layer heterostructures that pose a major challenge to silicon-era characterization methods. As a result, contemporary bandgap engineering relies mostly on simulated band structures that are hardly ever verified experimentally. Here, we present a method that experimentally evaluates bandgap, band offsets, and electric fields, in complex multi-semiconductor layered structures, and it does so simultaneously in all the layers. The method uses a modest optical photocurrent spectroscopy setup at ambient conditions. The results are analyzed using a simple model for electro-absorption. As an example, we apply the method to a typical GaN high electron mobility transistor structure. Measurements under various external electric fields allow us to experimentally construct band diagrams, not only at equilibrium but also under any other working conditions of the device. The electric fields are then used to obtain the charge carrier density and mobility in the quantum well as a function of the gate voltage over the entire range of operating conditions of the device. The principles exemplified here may serve as guidelines for the development of methods for simultaneous characterization of all the layers in complex, multi-semiconductor structures.

  8. Topical Workshop on Heterostructure Microelectronics for Information Systems Applications (TWHM-ISA '98) Held in Shonan Village Center, Hayama-machi, Kanagawa, Japan on August 30-September 2, 1998

    National Research Council Canada - National Science Library

    Ishibashi, T

    1998-01-01

    .... The technologies employed are based on heterostructure bipolar transistors, heterostructure field effect transistors and resonant tunneling diodes, and make use of a variety of heterostructure...

  9. Optical magnetism in planar metamaterial heterostructures.

    Science.gov (United States)

    Papadakis, Georgia T; Fleischman, Dagny; Davoyan, Artur; Yeh, Pochi; Atwater, Harry A

    2018-01-18

    Harnessing artificial optical magnetism has previously required complex two- and three-dimensional structures, such as nanoparticle arrays and split-ring metamaterials. By contrast, planar structures, and in particular dielectric/metal multilayer metamaterials, have been generally considered non-magnetic. Although the hyperbolic and plasmonic properties of these systems have been extensively investigated, their assumed non-magnetic response limits their performance to transverse magnetic (TM) polarization. We propose and experimentally validate a mechanism for artificial magnetism in planar multilayer metamaterials. We also demonstrate that the magnetic properties of high-index dielectric/metal hyperbolic metamaterials can be anisotropic, leading to magnetic hyperbolic dispersion in certain frequency regimes. We show that such systems can support transverse electric polarized interface-bound waves, analogous to their TM counterparts, surface plasmon polaritons. Our results open a route for tailoring optical artificial magnetism in lithography-free layered systems and enable us to generalize the plasmonic and hyperbolic properties to encompass both linear polarizations.

  10. Thermal stability of nanoscale metallic multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Ramos, A.S., E-mail: sofia.ramos@dem.uc.pt [CEMUC, Departamento de Engenharia Mecânica, Universidade de Coimbra, 3030-788 Coimbra (Portugal); Cavaleiro, A.J.; Vieira, M.T. [CEMUC, Departamento de Engenharia Mecânica, Universidade de Coimbra, 3030-788 Coimbra (Portugal); Morgiel, J. [Institute of Metallurgy and Materials Science, Polish Academy of Sciences, Reymonta 25, 30-059 Cracow (Poland); Safran, G. [Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, H-1121 Budapest (Hungary)

    2014-11-28

    Metallic nanolayered thin films/foils, in particular Ni/Al multilayers, have been used to promote joining. The objective of this work is to evaluate the thermal stability of nanoscale metallic multilayers with potential for joining applications. Multilayers thin films with low (Ti/Al and Ni/Ti), medium (Ni/Al) and high (Pd/Al) enthalpies of exothermic reaction were prepared by dual cathode magnetron sputtering. Their thermal stability was studied by: i) differential scanning calorimetry combined with X-ray diffraction (XRD), ii) in-situ XRD using cobalt radiation, and iii) in-situ transmission electron microscopy. It was possible to detect traces of intermetallic or amorphous phases in the as-deposited short period (bilayer thickness) multilayers, except for the Ti/Al films where no reaction products that might be formed during deposition were identified. For short periods (below 20 nm) the equilibrium phases are directly achieved upon annealing, whereas for higher periods intermediate trialuminide phases are present for Ti/Al and Ni/Al multilayers. The formation of B2-NiTi from Ni/Ti multilayers occurs without the formation of intermediate phases. On the contrary, for the Pd–Al system the formation of intermediate phases was never avoided. The viability of nanoscale multilayers as “filler” materials for joining macro or microparts/devices was demonstrated. - Highlights: • Me1 and Me2 (Me—metal) alternated nanolayers deposited by magnetron sputtering • Reactive Me1/Me2 multilayer thin films with nanometric modulation period • By heat treatment the films always evolve to the equilibrium intermetallic phase. • For some Me1–Me2 systems and periods, the formation of intermediate phases occurs. • Me1/Me2 multilayer thin films can be used as filler materials to enhance joining.

  11. Polyelectrolyte multilayers: preparation and applications

    Science.gov (United States)

    Izumrudov, V. A.; Mussabayeva, B. Kh; Murzagulova, K. B.

    2018-02-01

    The review concerns the results of studies on the synthesis of polyelectrolyte coatings on charged surfaces. These coatings represent nanostructured systems with clearly defined tendency to self-assembly and self-adjustment, which is of particular interest for materials science, biomedicine and pharmacology. A breakthrough in this area of knowledge is due to the development and introduction of a new technique, so-called layer-by-layer (LbL) deposition of nanofilms. The technique is very simple, viz., multilayers are formed as a result of alternating treatment of a charged substrate of arbitrary shape with water-salt solutions of differently charged polyelectrolytes. Nevertheless, efficient use of the LbL method to fabricate nanofilms requires meeting certain conditions and limitations that were revealed in the course of research on model systems. Prospects for applications of polyelectrolyte layers in various fields are discussed. The bibliography includes 58 references.

  12. Magnetic-plasmonic multilayered nanorods

    Science.gov (United States)

    Thumthan, Orathai

    Multilayered nanorods which consist of alternating magnetic layers separated by Au layers combine two distinctive properties, magnetic properties and surface plasmonic resonance (SPR) properties into one nano-entity. Their magnetic properties are tunable by changing the layer thickness, varying from single domain to superparamagnetic state. Superparamagnetic is a key requirement for magnetic nanoparticles for bioapplications. Superparamagnetic nanoparticles exhibit high magnetic moments at low applied magnetic field while retain no magnetic moments when magnetic field is removed preventing them from aggregation due to magnetic attraction. Au layers in the nanorods provide anchorage sites for functional group attachment. Also, Au nanodisks exhibit SPR properties. The SPR peak can be tuned from 540 nm to 820 nm by controlling the thickness of magnetic segments while keeping Au thickness constant. In this research, there are three types of multilayered nanorod have been fabricated: Au/NiFe nanorods, Au/Fe nanorods, and Au/Co nanorods. These magnetic nanorods were fabricated by templated electrodeposition into the channels in Anodic Aluminum Oxide (AAO) membrane. The setup for AAO fabrication was developed as a part of this research. Our fabricated AAO membrane has channels with a diameter ranging from 40nm to 80 nm and a thickness of 10um to 12um. Magnetic properties of nanorods such as saturation field, saturation moment, coercivity and remanence are able to manipulate through their shape anisotropy. The magnetization will be easier in long axis rather than short axis of particle. In addition, Au nanodisks in the nanorod structure are not only serving as anchorage sites for functional groups but also provide SPR properties. Under irradiation of light Au nanodisks strongly absorb light at SPR frequency which ranging from 540 nm to 820 nm by controlling the thickness of magnetic segments while keeping Au thickness constant. The SPR tunability of nanorods in near

  13. Highly Efficient Multilayer Thermoelectric Devices

    Science.gov (United States)

    Boufelfel, Ali

    2006-01-01

    Multilayer thermoelectric devices now at the prototype stage of development exhibit a combination of desirable characteristics, including high figures of merit and high performance/cost ratios. These devices are capable of producing temperature differences of the order of 50 K in operation at or near room temperature. A solvent-free batch process for mass production of these state-of-the-art thermoelectric devices has also been developed. Like prior thermoelectric devices, the present ones have commercial potential mainly by virtue of their utility as means of controlled cooling (and/or, in some cases, heating) of sensors, integrated circuits, and temperature-critical components of scientific instruments. The advantages of thermoelectric devices for such uses include no need for circulating working fluids through or within the devices, generation of little if any noise, and high reliability. The disadvantages of prior thermoelectric devices include high power consumption and relatively low coefficients of performance. The present development program was undertaken in the hope of reducing the magnitudes of the aforementioned disadvantages and, especially, obtaining higher figures of merit for operation at and near room temperature. Accomplishments of the program thus far include development of an algorithm to estimate the heat extracted by, and the maximum temperature drop produced by, a thermoelectric device; solution of the problem of exchange of heat between a thermoelectric cooler and a water-cooled copper block; retrofitting of a vacuum chamber for depositing materials by sputtering; design of masks; and fabrication of multilayer thermoelectric devices of two different designs, denoted I and II. For both the I and II designs, the thicknesses of layers are of the order of nanometers. In devices of design I, nonconsecutive semiconductor layers are electrically connected in series. Devices of design II contain superlattices comprising alternating electron

  14. Thermionic cooling in semiconductor multilayers

    International Nuclear Information System (INIS)

    Lee, S.; Lewis, R.A.; Lough, B.; Zhang, C.

    2000-01-01

    Full text: A solid-state refrigerator in which electrons transport heat has advantages over the conventional vapour-cycle, compressor-based domestic refrigerator since it has no moving parts, it is low-maintenance, silent, vibration-free and does not require the use of refrigerant gases. The usual approach to making an all-electrical refrigerator is by thermoelectric refrigeration. After a period of intense research in the 1950s and 60s it was realised that the efficiency of thermoelectric devices was less than, and unlikely to exceed, that of conventional compressor units. While thermoelectric cooling has found specialised applications in cases where reliability, compactness and weight are important considerations, it does not appear that thermo-electrics will ever successfully compete in the domestic market, in spite of recent advances in the design and fabrication of thermoelectric materials. A new approach to an all-electric refrigerator is to employ thermionic emission over potential barriers. A key difference between a thermoelectric device and a thermionic device is that in the former the electrons are scattered in their motion and in the latter they are not. Thus thermionic cooling, in principle, can be much more efficient than thermoelectric cooling. A radical new realisation of the thermionic refrigerator was suggested recently in which a multilayer semiconductor structure would be used. We discuss the optimisation of such a multilayer semiconductor cooling system by considering (1) electron-phonon interactions in the barriers and electrodes; (2) the detailed treatment of thermal conductivity; (3) an exact numerical solution of the heat and energy currents (in contrast to the previous approximate analytic solutions); (4) the effect of varying layer thickness across the device; and (5) the effect of varying current density across the device

  15. Nondestructive diagnosis of multilayer electronic plates

    International Nuclear Information System (INIS)

    Matvienko, A.N.; Savin, D.O.; Yas'ko, A.V.

    1992-01-01

    Methods of non-destructive tomographic investigation into multilayer printed plates using x radiation are described. Mathematic problem setting is given, experimental facility and methods for source data ecquisition are described. A special attention is paid to the consideration of the main factors differing the actual problem setting from the idealized one. Methods for accounting and correction of these factors are described. The efficiency of the approach proposed is demonstrated using the actual problems of reducing separate layers of multilayer printed plate metallization. The method developed is useful when exersizing control over multilayer printed plate production

  16. Ordering phenomena in transition-metal-oxide heterostructures

    International Nuclear Information System (INIS)

    Frano Pereira, Alex Manuel

    2014-01-01

    This doctoral work presents a study of ordered ground states of transition metal oxide compounds and multilayers using resonant elastic soft x-ray scattering. The technique has developed over the last decades and become especially useful when sample sizes are limited like the case of nanometer-scale films and superlattices. By scattering with photon energies on resonance with the element's electronic transitions, it is an element-specific, sensitive tool providing a combination of spectroscopic and spatial information. The thesis is divided into two central topics. The first part focuses on the investigation of perovskite-type, rare-earth nickelate heterostructures. X-rays tuned to the Ni L 3 -edge were used to unveil unprecedented diffraction evidence of long range magnetic order in LaNiO 3 -RXO 3 (RXO 3 = LaAlO 3 , DyScO 3 ) superlattices. We report on the appearance of magnetic order in such systems with a propagation vector of Q SDW = ((1)/(4),(1)/(4),l) in pseudocubic notation, similar to bulk rare earth nickelates with R ≠ La. With LaNiO 3 being paramagnetic in its bulk form, the magnetic Bragg peak is only present in superlattices where the thickness of the LaNiO 3 layers approaches the 2-dimensional limit. Besides the thickness dependence, the magnetic order was probed on samples grown on varying strain-inducing substrates. Azimuthal scans around Q SDW were done to determine the orientation of the spin spiral under these different conditions. We will explain how the reorientation of the spins can be understood by the magneto-crystalline anisotropy which is determined by the relative occupation of the Ni d-orbitals via spin-orbit coupling. First steps towards control of the spin spiral's orientation will be outlined, and along with the high remanent conductivity found in the magnetic spiral state, an outlook for metallic antiferromagnetic spintronics will be discussed. The second part of this thesis will address the observation of charge density

  17. Graphene/Si-nanowire heterostructure molecular sensors.

    Science.gov (United States)

    Kim, Jungkil; Oh, Si Duk; Kim, Ju Hwan; Shin, Dong Hee; Kim, Sung; Choi, Suk-Ho

    2014-06-20

    Wafer-scale graphene/Si-nanowire (Si-NW) array heterostructures for molecular sensing have been fabricated by vertically contacting single-layer graphene with high-density Si NWs. Graphene is grown in large scale by chemical vapour deposition and Si NWs are vertically aligned by metal-assisted chemical etching of Si wafer. Graphene plays a key role in preventing tips of vertical Si NWs from being bundled, thereby making Si NWs stand on Si wafer separately from each other under graphene, a critical structural feature for the uniform Schottky-type junction between Si NWs and graphene. The molecular sensors respond very sensitively to gas molecules by showing 37 and 1280% resistance changes within 3.5/0.15 and 12/0.15 s response/recovery times under O2 and H2 exposures in air, respectively, highest performances ever reported. These results together with the sensor responses in vacuum are discussed based on the surface-transfer doping mechanism.

  18. Proximity coupling in superconductor-graphene heterostructures.

    Science.gov (United States)

    Lee, Gil-Ho; Lee, Hu-Jong

    2018-02-16

    This review discusses the electronic properties and the prospective research directions of superconductor-graphene heterostructures. The basic electronic properties of graphene are introduced to highlight the unique possibility of combining two seemingly unrelated physics, superconductivity and relativity. We then focus on graphene-based Josephson junctions, one of the most versatile superconducting quantum devices. The various theoretical methods that have been developed to describe graphene Josephson junctions are examined, together with their advantages and limitations, followed by a discussion on the advances in device fabrication and the relevant length scales. The phase-sensitive properties and phase-particle dynamics of graphene Josephson junctions are examined to provide an understanding of the underlying mechanisms of Josephson coupling via graphene. Thereafter, microscopic transport of correlated quasiparticles produced by Andreev reflections at superconducting interfaces and their phase-coherent behaviors are discussed. Quantum phase transitions studied with graphene as an electrostatically tunable 2D platform are reviewed. The interplay between proximity-induced superconductivity and the quantum-Hall phase is discussed as a possible route to study topological superconductivity and non-Abelian physics. Finally, a brief summary on the prospective future research directions is given.

  19. Proximity coupling in superconductor-graphene heterostructures

    Science.gov (United States)

    Lee, Gil-Ho; Lee, Hu-Jong

    2018-05-01

    This review discusses the electronic properties and the prospective research directions of superconductor-graphene heterostructures. The basic electronic properties of graphene are introduced to highlight the unique possibility of combining two seemingly unrelated physics, superconductivity and relativity. We then focus on graphene-based Josephson junctions, one of the most versatile superconducting quantum devices. The various theoretical methods that have been developed to describe graphene Josephson junctions are examined, together with their advantages and limitations, followed by a discussion on the advances in device fabrication and the relevant length scales. The phase-sensitive properties and phase-particle dynamics of graphene Josephson junctions are examined to provide an understanding of the underlying mechanisms of Josephson coupling via graphene. Thereafter, microscopic transport of correlated quasiparticles produced by Andreev reflections at superconducting interfaces and their phase-coherent behaviors are discussed. Quantum phase transitions studied with graphene as an electrostatically tunable 2D platform are reviewed. The interplay between proximity-induced superconductivity and the quantum-Hall phase is discussed as a possible route to study topological superconductivity and non-Abelian physics. Finally, a brief summary on the prospective future research directions is given.

  20. Optimization of intrinsic layer thickness, dopant layer thickness and concentration for a-SiC/a-SiGe multilayer solar cell efficiency performance using Silvaco software

    Directory of Open Access Journals (Sweden)

    Wei Yuan Wong

    2017-01-01

    Full Text Available Solar cell is expanding as green renewable alternative to conventional fossil fuel electricity generation, but compared to other land-used electrical generators, it is a comparative beginner. Many applications covered by solar cells starting from low power mobile devices, terrestrial, satellites and many more. To date, the highest efficiency solar cell is given by GaAs based multilayer solar cell. However, this material is very expensive in fabrication and material costs compared to silicon which is cheaper due to the abundance of supply. Thus, this research is devoted to develop multilayer solar cell by combining two different layers of P-I-N structures with silicon carbide and silicon germanium. This research focused on optimising the intrinsic layer thickness, p-doped layer thickness and concentration, n-doped layer thickness and concentration in achieving the highest efficiency. As a result, both single layer a-SiC and a-SiGe showed positive efficiency improvement with the record of 27.19% and 9.07% respectively via parametric optimization. The optimized parameters is then applied on both SiC and SiGe P-I-N layers and resulted the convincing efficiency of 33.80%.

  1. Optimization of intrinsic layer thickness, dopant layer thickness and concentration for a-SiC/a-SiGe multilayer solar cell efficiency performance using Silvaco software

    Science.gov (United States)

    Yuan, Wong Wei; Natashah Norizan, Mohd; Salwani Mohamad, Ili; Jamalullail, Nurnaeimah; Hidayah Saad, Nor

    2017-11-01

    Solar cell is expanding as green renewable alternative to conventional fossil fuel electricity generation, but compared to other land-used electrical generators, it is a comparative beginner. Many applications covered by solar cells starting from low power mobile devices, terrestrial, satellites and many more. To date, the highest efficiency solar cell is given by GaAs based multilayer solar cell. However, this material is very expensive in fabrication and material costs compared to silicon which is cheaper due to the abundance of supply. Thus, this research is devoted to develop multilayer solar cell by combining two different layers of P-I-N structures with silicon carbide and silicon germanium. This research focused on optimising the intrinsic layer thickness, p-doped layer thickness and concentration, n-doped layer thickness and concentration in achieving the highest efficiency. As a result, both single layer a-SiC and a-SiGe showed positive efficiency improvement with the record of 27.19% and 9.07% respectively via parametric optimization. The optimized parameters is then applied on both SiC and SiGe P-I-N layers and resulted the convincing efficiency of 33.80%.

  2. Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor

    International Nuclear Information System (INIS)

    Zhang Jin-Xin; Guo Bao-Long; Wu Xian-Xiang; He Chao-Hui; Li Pei; Guo Hong-Xia

    2017-01-01

    The fabrication process dependent effects on single event effects (SEEs) are investigated in a commercial silicon–germanium heterojunction bipolar transistor (SiGe HBT) using three-dimensional (3D) TCAD simulations. The influences of device structure and doping concentration on SEEs are discussed via analysis of current transient and charge collection induced by ions strike. The results show that the SEEs representation of current transient is different from representation of the charge collection for the same process parameters. To be specific, the area of C/S junction is the key parameter that affects charge collection of SEE. Both current transient and charge collection are dependent on the doping of collector and substrate. The base doping slightly influences transient currents of base, emitter, and collector terminals. However, the SEEs of SiGe HBT are hardly affected by the doping of epitaxial base and the content of Ge. (paper)

  3. Capacitor-less memory cell fabricated on nano-scale strained Si on a relaxed SiGe layer-on-insulator

    International Nuclear Information System (INIS)

    Kim, Tae-Hyun; Park, Jea-Gun

    2013-01-01

    We investigated the combined effect of the strained Si channel and hole confinement on the memory margin enhancement for a capacitor-less memory cell fabricated on nano-scale strained Si on a relaxed SiGe layer-on-insulator (ε-Si SGOI). The memory margin for the ε-Si SGOI capacitor-less memory cell was higher than that of the memory cell fabricated on an unstrained Si-on-insulator (SOI) and increased with increasing Ge concentration of the relaxed SiGe layer; i.e. the memory margin for the ε-Si SGOI capacitor-less memory cell (138.6 µA) at a 32 at% Ge concentration was 3.3 times higher than the SOI capacitor-less memory cell (43 µA). (paper)

  4. Novel engineered compound semiconductor heterostructures for advanced electronics applications

    Science.gov (United States)

    Stillman, Gregory E.; Holonyak, Nick, Jr.; Coleman, James J.

    1992-06-01

    To provide the technology base that will enable SDIO capitalization on the performance advantages offered through novel engineered multiple-lavered compound semiconductor structures, this project has focussed on three specific areas: (1) carbon doping of AlGaAs/GaAs and InP/InGaAs materials for reliable high frequency heterojunction bipolar transistors; (2) impurity induced layer disordering and the environmental degradation of AlxGal-xAs-GaAs quantum-well heterostructures and the native oxide stabilization of AlxGal-xAs-GaAs quantum well heterostructure lasers; and (3) non-planar and strained-layer quantum well heterostructure lasers and laser arrays. The accomplishments in this three year research are reported in fifty-six publications and the abstracts included in this report.

  5. Equivalent circuit analysis of a PbS/ferroelectric heterostructure

    Science.gov (United States)

    Pintilie, L.; Pintilie, I.; Botila, T.; Petre, D.; Licea, I.

    1997-02-01

    The frequency characteristic of the transverse photoelectric signal of a three electroded PbS/ferroelectric heterostructure is analyzed in this paper. The ferroelectric material is a lead titanate-zirconate ceramic obtained by hot pressing. It was found that the frequency characteristic of this signal is similar to a high-pass filter and depends on the properties of the ferroelectric substrates on which the PbS film was deposited. An equivalent circuit was proposed comparing the studied heterostructure with a metal-oxide semiconductor (MOS) structure. The circuit elements were determined fitting the obtained formula for the output signal with the experimental data. Some of the circuit elements were determined experimentally using various measuring techniques. It was found that the experimentally determined values are close to the theoretically determined values. The studied heterostructure can be changed into a band-pass filter adding some external circuit elements such as resistors and capacitors.

  6. Photonic Heterostructures with Properties of Ferroelectrics and Light Polarizers

    Energy Technology Data Exchange (ETDEWEB)

    Palto, S. P., E-mail: palto@online.ru; Draginda, Yu. A. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

    2010-11-15

    The optical and electro-optical properties of a new type of photonic heterostructure composed of alternating ferroelectric molecular layers and optically anisotropic layers of another material are considered. A numerical simulation of the real prototype of this heterostructure, which can be prepared by the Langmuir-Blodgett method from layers of a ferroelectric copolymer (polyvinylidene fluoride trifluoroethylene) and an azo dye with photoinduced optical anisotropy, has been performed. It is shown that this heterostructure has pronounced polarization optical properties and yields a significant change in the polarization state of light at the photonic band edges in the ranges of the maximum density of photon states. The latter property can be used to obtain an enhanced electro-optic effect at small spectral shifts of the photonic band (the latter can be provided by the piezoelectric effect in ferroelectric layers).

  7. MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection

    Science.gov (United States)

    2012-09-01

    due to metal catalysis and wet etching. Using the blackened SiGe/Si, MSM photodiodes were fabricated and tested. The lowering of reflection using a...MSM- Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection by Fred...Do not return it to the originator. Army Research Laboratory Adelphi, MD 20783-1197 ARL-TR-6176 September 2012 MSM- Metal

  8. Interface-engineered oxygen octahedral coupling in manganite heterostructures

    Science.gov (United States)

    Huijben, M.; Koster, G.; Liao, Z. L.; Rijnders, G.

    2017-12-01

    Control of the oxygen octahedral coupling (OOC) provides a large degree of freedom to manipulate physical phenomena in complex oxide heterostructures. Recently, local tuning of the tilt angle has been found to control the magnetic anisotropy in ultrathin films of manganites and ruthenates, while symmetry control can manipulate the metal insulator transition in nickelate thin films. The required connectivity of the octahedra across the heterostructure interface enforces a geometric constraint to the 3-dimensional octahedral network in epitaxial films. Such geometric constraint will either change the tilt angle to retain the connectivity of the corner shared oxygen octahedral network or guide the formation of a specific symmetry throughout the epitaxial film. Here, we will discuss the control of OOC in manganite heterostructures by interface-engineering. OOC driven magnetic and transport anisotropies have been realized in LSMO/NGO heterostructures. Competition between the interfacial OOC and the strain further away from the interface leads to a thickness driven sharp transition of the anisotropic properties. Furthermore, octahedral relaxation leading to a change of p-d hybridization driven by interfacial OOC appears to be the strongest factor in thickness related variations of magnetic and transport properties in epitaxial LSMO films on NGO substrates. The results unequivocally link the atomic structure near the interfaces to the macroscopic properties. The strong correlation between a controllable oxygen network and the functionalities will have significant impact on both fundamental research and technological application of correlated perovskite heterostructures. By controlling the interfacial OOC, it is possible to pattern in 3 dimensions the magnetization to achieve non-collinear magnetization in both in-plane and out of plane directions, thus making the heterostructures promising for application in orthogonal spin transfer devices, spin oscillators, and low

  9. Atomic Scale Chemical and Structural Characterization of Ceramic Oxide Heterostructure Interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Singh, R. K.

    2003-04-16

    The research plan was divided into three tasks: (a) growth of oxide heterostructures for interface engineering using standard thin film deposition techniques, (b) atomic level characterization of oxide heterostructure using such techniques as STEM-2 combined with AFM/STM and conventional high-resolution microscopy (HRTEM), and (c) property measurements of aspects important to oxide heterostructures using standard characterization methods, including dielectric properties and dynamic cathodoluminescence measurements. Each of these topics were further classified on the basis of type of oxide heterostructure. Type I oxide heterostructures consisted of active dielectric layers, including the materials Ba{sub x}Sr{sub 1-x}TiO{sub 3} (BST), Y{sub 2}O{sub 3} and ZrO{sub 2}. Type II heterostructures consisted of ferroelectric active layers such as lanthanum manganate and Type III heterostructures consist of phosphor oxide active layers such as Eu-doped Y{sub 2}O{sub 3}.

  10. Improvement in thermoelectric power factor of mechanically alloyed p-type SiGe by incorporation of TiB{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, Sajid, E-mail: sajidahmadiitkgp@gmail.com [Nuclear Research Laboratory, Astrophysical Sciences Division, B.A.R.C., Zakura, Srinagar, Kashmir-190024 (India); Dubey, K. [Barkatullah University, Bhopal–462026 (India); Bhattacharya, Shovit; Basu, Ranita; Bhatt, Ranu; Bohra, A. K.; Singh, Ajay; Aswal, D. K.; Gupta, S. K. [Technical Physics Division, B.A.R.C., Trombay, Mumbai – 400085 (India)

    2016-05-23

    Nearly 60% of the world’s useful energy is wasted as heat and recovering a fraction of this waste heat by converting it as useful electrical power is an important area of research{sup [1]}. Thermoelectric power generators (TEG) are solid state devices which converts heat into electricity. TEG consists of n and p-type thermoelements connected electrically in series and thermally in parallel{sup [2]}. Silicon germanium (SiGe) alloy is one of the conventional high temperature thermoelectric materials and is being used in radio-isotopes based thermoelectric power generators for deep space exploration programs.Temperature (T) dependence of thermoelectric (TE) properties of p-type SiGe and p-type SiGe-x wt.%TiB{sub 2} (x=6,8,10%) nanocomposite materials has been studied with in the temperature range of 300 K to 1100 K. It is observed that there is an improvement in the power factor (α{sup 2}/ρ) of SiGe alloy on addition of TiB{sub 2} upto 8 wt.% that is mainly due to increase in the Seebeck coefficient (α) and electrical conductivity (σ) of the alloy.

  11. Electronic homogeneity of nanowire heterostructure Light Emitting Diodes (LEDs)

    Science.gov (United States)

    Selcu, Camelia; May, Brelon J.; Sarwar, A. T. M. Golam; Myers, Roberto C.

    In addition to low defect densities and great tunability bandgap within a single heterostructure, the possibility of growing (Al, In,_) GaN nanowire heterostructure LEDs on different substrates while maintaining their high electronic and optical properties makes them very attractive. We investigated the electronic homogeneity of the (Al, In,_) GaN nanowire ensemble by acquiring current maps at certain applied biases using conductive AFM. By taken IVs on individual nanowires, we found that different wires have different turn on voltages and that some of the nanowires degrade due to the applied bias.

  12. Graphene plasmonic heterostructures for new types of terahertz lasers

    Science.gov (United States)

    Otsuji, Taiichi; Ryzhii, Victor; Boubanga Tombet, Stephane Albon; Watanabe, Takayuki; Satou, Akira; Ryzhii, Maxim; Dubinov, Alexander; Aleshkin, Vladimir Y.; Popov, Vyacheslav; Mitin, Vladimir; Shur, Michael

    2014-09-01

    This paper reviews recent advances in graphene plasmonic heterostructures for new types of terahertz lasers. We theoretically discovered and experimentally manifested that the excitation of surface plasmons in population-inverted graphene by the terahertz photons results in propagating surface plasmon polaritons with a giant gain in a wide terahertz range. Furthermore, double graphene layer heterostructures consisting of a tunnel barrier insulator sandwiched with a pair of gated graphene monolayers are introduced. Photoemission-assisted quantum-mechanical resonant tunneling can be electrically tuned to meet a desired photon energy for lasing, resulting in enormous enhancement of the terahertz gain. Current injection structures are also addressed.

  13. High ionic conductivity in confined bismuth oxide-based heterostructures

    DEFF Research Database (Denmark)

    Sanna, Simone; Esposito, Vincenzo; Christensen, Mogens

    2016-01-01

    Bismuth trioxide in the cubic fluorite phase (δ-Bi2O3) exhibits the highest oxygen ionic conductivity. In this study, we were able to stabilize the pure -Bi2O3 at low temperature with no addition of stabilizer but only by engineering the interface, using highly coherent heterostructures made...... of alternative layers of δ-Bi2O3 and Yttria Stabilized Zirconia (YSZ), deposited by pulsed laser deposition. The resulting [δ-Bi2O3=YSZ] heterostructures are found to be stable over a wide temperature range (500-750 °C) and exhibits stable high ionic conductivity over a long time comparable to the value...

  14. Nano Electronics on Atomically Controlled van der Waals Quantum Heterostructures

    Science.gov (United States)

    2018-02-19

    AFRL-AFOSR-JP-TR-2018-0012 Nano Electronics on Atomically Controlled van der Waals Quantum Heterostructures PHILIP Kim HARVARD COLLEGE PRESIDENT... Atomically Controlled van der Waals Quantum Heterostructures 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA2386-15-1-4003 5c.  PROGRAM ELEMENT NUMBER 61102F...Final Report for AOARD Grant FA2386-15-1-4003 “Nano Electronics on Atomically Controlled van der Waals Quantum Heterostructures” 2/18/2018 Name of

  15. Ordered organic-organic multilayer growth

    Science.gov (United States)

    Forrest, Stephen R; Lunt, Richard R

    2015-01-13

    An ordered multilayer crystalline organic thin film structure is formed by depositing at least two layers of thin film crystalline organic materials successively wherein the at least two thin film layers are selected to have their surface energies within .+-.50% of each other, and preferably within .+-.15% of each other, whereby every thin film layer within the multilayer crystalline organic thin film structure exhibit a quasi-epitaxial relationship with the adjacent crystalline organic thin film.

  16. Electronic transport in graphene-based heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Tan, J. Y.; Avsar, A.; Balakrishnan, J.; Taychatanapat, T.; O' Farrell, E. C. T.; Eda, G.; Castro Neto, A. H. [Graphene Research Center, National University of Singapore, Singapore 117542 (Singapore); Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Koon, G. K. W.; Özyilmaz, B., E-mail: barbaros@nus.edu.sg [Graphene Research Center, National University of Singapore, Singapore 117542 (Singapore); Department of Physics, National University of Singapore, Singapore 117542 (Singapore); NanoCore, National University of Singapore, Singapore 117576 (Singapore); Watanabe, K.; Taniguchi, T. [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

    2014-05-05

    While boron nitride (BN) substrates have been utilized to achieve high electronic mobilities in graphene field effect transistors, it is unclear how other layered two dimensional (2D) crystals influence the electronic performance of graphene. In this Letter, we study the surface morphology of 2D BN, gallium selenide (GaSe), and transition metal dichalcogenides (tungsten disulfide (WS{sub 2}) and molybdenum disulfide (MoS{sub 2})) crystals and their influence on graphene's electronic quality. Atomic force microscopy analysis shows that these crystals have improved surface roughness (root mean square value of only ∼0.1 nm) compared to conventional SiO{sub 2} substrate. While our results confirm that graphene devices exhibit very high electronic mobility (μ) on BN substrates, graphene devices on WS{sub 2} substrates (G/WS{sub 2}) are equally promising for high quality electronic transport (μ ∼ 38 000 cm{sup 2}/V s at room temperature), followed by G/MoS{sub 2} (μ ∼ 10 000 cm{sup 2}/V s) and G/GaSe (μ ∼ 2200 cm{sup 2}/V s). However, we observe a significant asymmetry in electron and hole conduction in G/WS{sub 2} and G/MoS{sub 2} heterostructures, most likely due to the presence of sulphur vacancies in the substrate crystals. GaSe crystals are observed to degrade over time even under ambient conditions, leading to a large hysteresis in graphene transport making it a less suitable substrate.

  17. Coupling Magnetism to Electricity in Multiferroic Heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ramesh, R [U.S. DOE

    2012-02-15

    Complex perovskite oxides exhibit a rich spectrum of functional responses, including magnetism, ferroelectricity, highly correlated electron behavior, superconductivity, etc. The basic materials physics of such materials provide the ideal playground for interdisciplinary scientific exploration. Over the past decade we have been exploring the science of such materials (for example, colossal magnetoresistance, ferroelectricity, etc) in thin-film form by creating epitaxial heterostructures and nanostructures. Among the large number of materials systems, there exists a small set of materials which exhibit multiple order parameters; these are known as multiferroics. Using our work in the field of ferroelectric and ferromagnetic oxides as the background, we are now exploring such materials as epitaxial thin films, as well as nanostructures. Specifically, we are studying the role of thin-film growth, heteroepitaxy, and processing on the basic properties as well as the magnitude of the coupling between the order parameters. In our work we are exploring the switchability of the antiferromagnetic order using this coupling. What is the importance of this work? Antiferromagnets are pervasive in the recording industry. They are used as exchange biasing layers in magnetic tunnel junctions, etc. However, to date there has been no antiferomagnet that is electrically tunable. We believe that the multiferroic BiFeO3 is one compound where this can be observed at room temperature. The next step is to explore the coupling of a ferromagnet to this antiferromagnet through the exchange biasing concept. Ultimately, this will give us the opportunity to switch the magnetic state in a ferromagnet (and therefore the spin polarization direction) by simply applying an electric field to the underlying antiferromagnetic ferroelectric. In this talk, I will describe our progress to date on this exciting possibility.

  18. Development of a light-initiated chemiluminescent assay for the quantitation of sIgE against egg white allergens based on component-resolved diagnosis.

    Science.gov (United States)

    Bian, Ying; Liu, Changshan; She, Tiantian; Wang, Mengjuan; Yan, Juanjuan; Wei, Dianjun; Li, Huiqiang

    2018-02-01

    The determination of specific IgE (sIgE) level is of great importance in IgE-mediated food allergies. Our aim was to develop a homogeneous immunoassay-light-initiated chemiluminescent assay (LICA)-for measuring allergen sIgE of a single component in egg white, thus evaluating the LICA-sIgE assay as a useful tool in the diagnosis of food allergy. The LICA-sIgE assay was performed by incubating serum sample with anti-human IgE antibody coated with chemiluminescer beads, streptavidin-coated sensitizer beads, and biotinylated antigens, which consist of four components in egg white. Serum samples from egg allergic patients (n = 70) and healthy volunteers (n = 30) were collected. For calibration, purified human IgE was used as the calibrator. Working conditions of this homogeneous immunoassay were optimized, analytical performance was determined, and correlation of the results between LICA and ImmunoCAP was evaluated. The assays were performed in 8-well plates with a sample volume diluted to 1:10 of 25 μl. Intra-assay precision (% coefficient of variation) ranged from 1.83 to 4.13%, and inter-assay precision ranged from 2.70 to 8.70%. It exhibited excellent sensitivity, which could distinguish between positive samples and negative samples even at a large dilution level. The sIgE-LICA and ImmunoCAP correlated well in patients allergic to single component (r 2  = 0.929). Also, the components ovomucoid and ovalbumin were best at predicting ImmunoCAP results, with the same area under the ROC curve (AUC) of 0.81, and a specificity of 90.0 and 93.3%, respectively. Our data show effective performance characteristics of LICA to detect sIgE in human serum based on component-resolved diagnostic tests (CRD). The homogeneous sIgE-LICA assay has the following key advantages: requires no washing, simplicity and rapidity, reproducibility, high-throughput, good performance in a liquid phase assay, and good suitability for sIgE diagnosis in food allergy based on CRD

  19. Oxide Thin Films and Nano-heterostructures for Microelectronics (MOS Structures, Ferroelectric Materials and Multiferroic Heterostructures)

    Science.gov (United States)

    Pintilie, I.; Pintilie, L.; Filip, L. D.; Nistor, L. C.; Ghica, C.

    Oxide materials are becoming of increasing interest due to their large variety of physical properties such as dielectric, magnetism, superconductivity, conductivity, ferroelectricity, multiferroism, etc. In addition, interfacing oxides with other materials is conferring new or better device functionalities. The main physical properties of oxides interfaces and their impact on the electrical properties of interest for microelectronic applications are presented. Further on, this subchapter is also devoted to the investigation and understanding of interface effects observed in heterostructures containing linear (SiO2) and non-linear (ferroelectrics) dielectrics in combination with wide-band gap semiconductor materials (e.g. ZnO and SiC) with special emphasis on size effects, interface quality and the opportunity to control the emergent phenomena in Metal-Oxide-Semiconductor (MOS) and Metal-Ferroelectric-Semiconductor (MFS) materials systems.

  20. Multilayer Piezoelectric Stack Actuator Characterization

    Science.gov (United States)

    Sherrit, Stewart; Jones, Christopher M.; Aldrich, Jack B.; Blodget, Chad; Bao, Xioaqi; Badescu, Mircea; Bar-Cohen, Yoseph

    2008-01-01

    Future NASA missions are increasingly seeking to use actuators for precision positioning to accuracies of the order of fractions of a nanometer. For this purpose, multilayer piezoelectric stacks are being considered as actuators for driving these precision mechanisms. In this study, sets of commercial PZT stacks were tested in various AC and DC conditions at both nominal and extreme temperatures and voltages. AC signal testing included impedance, capacitance and dielectric loss factor of each actuator as a function of the small-signal driving sinusoidal frequency, and the ambient temperature. DC signal testing includes leakage current and displacement as a function of the applied DC voltage. The applied DC voltage was increased to over eight times the manufacturers' specifications to investigate the correlation between leakage current and breakdown voltage. Resonance characterization as a function of temperature was done over a temperature range of -180C to +200C which generally exceeded the manufacturers' specifications. In order to study the lifetime performance of these stacks, five actuators from one manufacturer were driven by a 60volt, 2 kHz sine-wave for ten billion cycles. The tests were performed using a Lab-View controlled automated data acquisition system that monitored the waveform of the stack electrical current and voltage. The measurements included the displacement, impedance, capacitance and leakage current and the analysis of the experimental results will be presented.

  1. Repeatability of Cryogenic Multilayer Insulation

    Science.gov (United States)

    Johnson, W. L.; Vanderlaan, M.; Wood, J. J.; Rhys, N. O.; Guo, W.; Van Sciver, S.; Chato, D. J.

    2017-12-01

    Due to the variety of requirements across aerospace platforms, and one off projects, the repeatability of cryogenic multilayer insulation (MLI) has never been fully established. The objective of this test program is to provide a more basic understanding of the thermal performance repeatability of MLI systems that are applicable to large scale tanks. There are several different types of repeatability that can be accounted for: these include repeatability between identical blankets, repeatability of installation of the same blanket, and repeatability of a test apparatus. The focus of the work in this report is on the first two types of repeatability. Statistically, repeatability can mean many different things. In simplest form, it refers to the range of performance that a population exhibits and the average of the population. However, as more and more identical components are made (i.e. the population of concern grows), the simple range morphs into a standard deviation from an average performance. Initial repeatability testing on MLI blankets has been completed at Florida State University. Repeatability of five Glenn Research Center (GRC) provided coupons with 25 layers was shown to be +/- 8.4% whereas repeatability of repeatedly installing a single coupon was shown to be +/- 8.0%. A second group of 10 coupons has been fabricated by Yetispace and tested by Florida State University, the repeatability between coupons has been shown to be +/- 15-25%. Based on detailed statistical analysis, the data has been shown to be statistically significant.

  2. Tracking Ultrafast Carrier Dynamics in Single Semiconductor Nanowire Heterostructures

    Directory of Open Access Journals (Sweden)

    Taylor A.J.

    2013-03-01

    Full Text Available An understanding of non-equilibrium carrier dynamics in silicon (Si nanowires (NWs and NW heterostructures is very important due to their many nanophotonic and nanoelectronics applications. Here, we describe the first measurements of ultrafast carrier dynamics and diffusion in single heterostructured Si nanowires, obtained using ultrafast optical microscopy. By isolating individual nanowires, we avoid complications resulting from the broad size and alignment distribution in nanowire ensembles, allowing us to directly probe ultrafast carrier dynamics in these quasi-one-dimensional systems. Spatially-resolved pump-probe spectroscopy demonstrates the influence of surface-mediated mechanisms on carrier dynamics in a single NW, while polarization-resolved femtosecond pump-probe spectroscopy reveals a clear anisotropy in carrier lifetimes measured parallel and perpendicular to the NW axis, due to density-dependent Auger recombination. Furthermore, separating the pump and probe spots along the NW axis enabled us to track space and time dependent carrier diffusion in radial and axial NW heterostructures. These results enable us to reveal the influence of radial and axial interfaces on carrier dynamics and charge transport in these quasi-one-dimensional nanosystems, which can then be used to tailor carrier relaxation in a single nanowire heterostructure for a given application.

  3. Photosensitive heterostructures made of sulfonamide zinc phthalocyanine and organic semiconductor

    Czech Academy of Sciences Publication Activity Database

    Lutsyk, P.; Vertsimakha, Ya.; Nešpůrek, Stanislav; Pomaz, I.

    2011-01-01

    Roč. 535, - (2011), s. 18-29 ISSN 1542-1406 Institutional research plan: CEZ:AV0Z40500505 Keywords : heterostructure * reversal of sign in photovoltage spectra * sulphonamide-substituted phthalocyanine Subject RIV: CD - Macromolecular Chemistry Impact factor: 0.580, year: 2011

  4. Photopatterning of heterostructured polymer Langmuir-Blodgett films

    International Nuclear Information System (INIS)

    Li Tiesheng; Mitsuishi, Masaya; Miyashita, Tokuji

    2008-01-01

    Heterostructured polymer Langmuir-Blodgett (LB) film prepared by using poly(N-dodecylacrylamide-co-t-butyl 4-vinylphenyl carbonate) (p(DDA-tBVPC53)) and poly(N-neopentyl methacrylamide-co-9-anthrylmethyl methacrylate) (p(nPMA-AMMA10)) polymer LB films which can act as photogenerator layers were investigated. Patterns with a resolution of 0.75 μm were obtained on heterostructured polymer LB films composed of 4 layers of p(nPMA-AMMA10) LB film (top layers) and 40 layers of p(DDA-tBVPC53) LB film (under layers) on a silicon wafer by deep UV irradiation followed by development with 1% tetramethylammonium hydroxide aqueous solution. The sensitivity of the heterostructured polymer LB films was improved without loss of the resolution compared with p(DDA-tBVPC53) LB film. The etch resistance of the heterostructured polymer LB films was sufficiently good to allow patterning of a copper film suitable for photomask fabrication

  5. Inorganic nanostructure-organic polymer heterostructures useful for thermoelectric devices

    Energy Technology Data Exchange (ETDEWEB)

    See, Kevin C.; Urban, Jeffrey J.; Segalman, Rachel A.; Coates, Nelson E.; Yee, Shannon K.

    2017-11-28

    The present invention provides for an inorganic nanostructure-organic polymer heterostructure, useful as a thermoelectric composite material, comprising (a) an inorganic nanostructure, and (b) an electrically conductive organic polymer disposed on the inorganic nanostructure. Both the inorganic nanostructure and the electrically conductive organic polymer are solution-processable.

  6. Nonlinear properties of a graded-index photonic heterostructure

    Indian Academy of Sciences (India)

    The optical properties of a one-dimensional (1D) photonic heterostructure with gradedindex nonlinear materials are demonstrated theoretically. The influence of the gradation profile of the graded-index nonlinear layers on the linear and nonlinear responses of the structure are analysed. It is shown that the -factor of the ...

  7. Franckeite as a naturally occurring van der Waals heterostructure

    NARCIS (Netherlands)

    Molina-Mendoza, Aday J.; Giovanelli, Emerson; Paz, Wendel S.; Ninõ, Miguel Angel; Island, J.O.; Evangeli, Charalambos; Aballe, Luciá; Foerster, Michael; Van Der Zant, Herre S.J.; Rubio-Bollinger, Gabino; Agraït, Nicolás; Palacios, JJ; Pérez, Emilio M.; Castellanos-Gomez, Andres

    2017-01-01

    The fabrication of van der Waals heterostructures, artificial materials assembled by individual stacking of 2D layers, is among the most promising directions in 2D materials research. Until now, the most widespread approach to stack 2D layers relies on deterministic placement methods, which are

  8. Interface-engineered oxygen octahedral coupling in manganite heterostructures

    NARCIS (Netherlands)

    Huijben, M.; Koster, G.; Liao, Z. L.; Rijnders, G.

    2017-01-01

    Control of the oxygen octahedral coupling (OOC) provides a large degree of freedom to manipulate physical phenomena in complex oxide heterostructures. Recently, local tuning of the tilt angle has been found to control the magnetic anisotropy in ultrathin films of manganites and ruthenates, while

  9. Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures.

    Science.gov (United States)

    Pateras, Anastasios; Park, Joonkyu; Ahn, Youngjun; Tilka, Jack A; Holt, Martin V; Reichl, Christian; Wegscheider, Werner; Baart, Timothy A; Dehollain, Juan Pablo; Mukhopadhyay, Uditendu; Vandersypen, Lieven M K; Evans, Paul G

    2018-04-23

    Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic electrodes. The formation of metal/semiconductor interfaces, growth processes associated with polycrystalline metallic layers, and differential thermal expansion produce elastic distortion in the active areas of quantum devices. Understanding and controlling these distortions present a significant challenge in quantum device development. We report synchrotron X-ray nanodiffraction measurements combined with dynamical X-ray diffraction modeling that reveal lattice tilts with a depth-averaged value up to 0.04° and strain on the order of 10 -4 in the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Elastic distortions in GaAs/AlGaAs heterostructures modify the potential energy landscape in the 2DEG due to the generation of a deformation potential and an electric field through the piezoelectric effect. The stress induced by metal electrodes directly impacts the ability to control the positions of the potential minima where quantum dots form and the coupling between neighboring quantum dots.

  10. IZO deposited by PLD on flexible substrate for organic heterostructures

    Science.gov (United States)

    Socol, M.; Preda, N.; Stanculescu, A.; Breazu, C.; Florica, C.; Rasoga, O.; Stanculescu, F.; Socol, G.

    2017-05-01

    In:ZnO (IZO) thin films were deposited on flexible plastic substrates by pulsed laser deposition (PLD) method. The obtained layers present adequate optical and electrical properties competitive with those based on indium tin oxide (ITO). The figure of merit (9 × 10-3 Ω-1) calculated for IZO layers demonstrates that high quality coatings can be prepared by this deposition technique. A thermal annealing (150 °C for 1 h) or an oxygen plasma etching (6 mbar for 10 min.) were applied to the IZO layers to evaluate the influence of these treatments on the properties of the transparent coatings. Using vacuum evaporation, organic heterostructures based on cooper phthalocyanine (CuPc) and 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) were deposited on the untreated and treated IZO layers. The optical and electrical properties of the heterostructures were investigated by UV-Vis, FTIR and current-voltage ( I- V) measurements. For the heterostructure fabricated on IZO treated in oxygen plasma, an improvement in the current value with at least one order of magnitude was evidenced in the I- V characteristics recorded in dark conditions. Also, an increase in the current value for the heterostructure deposited on untreated IZO layer can be achieved by adding an organic layer such as tris-8-hydroxyquinoline aluminium (Alq3).

  11. Analysis of Critical Dimensions for Nanowire Core-Multishell Heterostructures.

    Science.gov (United States)

    Yan, Xin; Fan, Shuyu; Zhang, Xia; Ren, Xiaomin

    2015-12-01

    Critical dimensions for nanowire core-multishell heterostructures are analyzed by using finite-element method based on the energy equilibrium criteria. Results show that the nanowire core-shell heterostructure can sufficiently reduce the strain in the shell and increase the critical shell thickness. The critical dimensions for the nanowire core-multishell heterostructure are determined by the stress fields generated at two heterointerfaces. For thin barrier, the critical dimensions decrease as the core radius increases, while when the barrier is thick enough, the critical dimensions show an increase with the increase of core radius conversely. This can be attributed to a competition between the lattice mismatch and strain distribution, which dominate the critical dimensions alternatively. Two critical quantum well thicknesses are obtained in the nanowire core-multishell heterostructure. Below the dislocation-free critical thickness, the structure will be coherent regardless of the barrier thickness. While above the dislocation-unavoidable thickness, dislocations are always energetically favored. In the dislocation-controllable region between the two critical thicknesses, coherent structure can be obtained via controlling the well and barrier thicknesses. The results are in good agreement with the experimental data and may serve as guidance for the design of coherent nanowire core-multishell quantum well structures and devices.

  12. Nonlinear properties of a graded-index photonic heterostructure

    Indian Academy of Sciences (India)

    Abstract. The optical properties of a one-dimensional (1D) photonic heterostructure with graded- index nonlinear materials are demonstrated theoretically. The influence of the gradation profile of the graded-index nonlinear layers on the linear and nonlinear responses of the structure are analysed. It is shown that the ...

  13. Surface- and interface-engineered heterostructures for solar hydrogen generation

    Science.gov (United States)

    Chen, Xiangyan; Li, Yanrui; Shen, Shaohua

    2018-04-01

    Photoelectrochemical (PEC) water splitting based on semiconductor photoelectrodes provides a promising platform for reducing environmental pollution and solving the energy crisis by developing clean, sustainable and environmentally friendly hydrogen energy. In this context, metal oxides with their advantages including low cost, good chemical stability and environmental friendliness, have attracted extensive attention among the investigated candidates. However, the large bandgap, poor charge transfer ability and high charge recombination rate limit the PEC performance of metal oxides as photoelectrodes. To solve this limitation, many approaches toward enhanced PEC water splitting performance, which focus on surface and interface engineering, have been presented. In this topical review, we concentrate on the heterostructure design of some typical metal oxides with narrow bandgaps (e.g. Fe2O3, WO3, BiVO4 and Cu2O) as photoelectrodes. An overview of the surface- and interface-engineered heterostructures, including semiconductor heterojunctions, surface protection, surface passivation and cocatalyst decoration, will be given to introduce the recent advances in metal oxide heterostructures for PEC water splitting. This article aims to provide fundamental references and principles for designing metal oxide heterostructures with high activity and stability as photoelectrodes for PEC solar hydrogen generation.

  14. Measurement, modeling, and simulation of cryogenic SiGe HBT amplifier circuits for fast single spin readout

    Science.gov (United States)

    England, Troy; Curry, Matthew; Carr, Steve; Swartzentruber, Brian; Lilly, Michael; Bishop, Nathan; Carrol, Malcolm

    2015-03-01

    Fast, low-power quantum state readout is one of many challenges facing quantum information processing. Single electron transistors (SETs) are potentially fast, sensitive detectors for performing spin readout of electrons bound to Si:P donors. From a circuit perspective, however, their output impedance and nonlinear conductance are ill suited to drive the parasitic capacitance typical of coaxial conductors used in cryogenic environments, necessitating a cryogenic amplification stage. We will discuss calibration data, as well as modeling and simulation of cryogenic silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) circuits connected to a silicon SET and operating at 4 K. We find a continuum of solutions from simple, single-HBT amplifiers to more complex, multi-HBT circuits suitable for integration, with varying noise levels and power vs. bandwidth tradeoffs. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  15. Two-zone SiGe base heterojunction bipolar charge plasma transistor for next generation analog and RF applications

    Science.gov (United States)

    Bramhane, Lokesh Kumar; Singh, Jawar

    2017-01-01

    For next generation terahertz applications, heterojunction bipolar transistor (HBT) with reduced dimensions and charge plasma (CP) can be a potential candidate due to simplified and inexpensive process. In this paper, a symmetric lateral two-zone SiGe base heterojunction bipolar charge plasma transistor (HBCPT) with an extruded (extended) base is proposed and its performance at circuit level is studied. The linearly graded electric field in the proposed HBCPT provides improved self gain (β) and cut-off frequency (fT). Two-dimensional (2-D) TCAD and small-signal model based simulations of the proposed HBCPT demonstrates high self gain β 35-172.93 and fT of 1-4 THz for different device parameters. Moreover, fT of 1104.9 GHz and β of 35 can be achieved by decreasing Nb up to 8.2 ×1017cm-3 . Although, fT of 2 THz and 4 THz can also be achieved by reducing the base resistance up to 10 Ω and increasing the emitter/collector length up to 63 nm, respectively. The small-signal analysis of common-emitter amplifier based on the proposed HBCPT demonstrate high voltage gain of 50.11 as compared to conventional HBT (18.1).

  16. Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layer

    Directory of Open Access Journals (Sweden)

    Chao-Chun Wang

    2012-01-01

    Full Text Available The nanocrystalline silicon-germanium (nc-SiGe thin films were deposited by high-frequency (27.12 MHz plasma-enhanced chemical vapor deposition (HF-PECVD. The films were used in a silicon-based thin film solar cell with graded-dead absorption layer. The characterization of the nc-SiGe films are analyzed by scanning electron microscopy, UV-visible spectroscopy, and Fourier transform infrared absorption spectroscopy. The band gap of SiGe alloy can be adjusted between 0.8 and 1.7 eV by varying the gas ratio. For thin film solar cell application, using double graded-dead i-SiGe layers mainly leads to an increase in short-circuit current and therefore cell conversion efficiency. An initial conversion efficiency of 5.06% and the stabilized efficiency of 4.63% for an nc-SiGe solar cell were achieved.

  17. Elastic and piezoelectric properties of zincblende and wurtzite crystalline nanowire heterostructures.

    Science.gov (United States)

    Boxberg, Fredrik; Søndergaard, Niels; Xu, H Q

    2012-09-04

    The elastic and piezoelectric properties of zincblende and wurtzite crystalline InAs/InP nanowire heterostructures have been studied using electro-elastically coupled continuum elasticity theory. A comprehensive comparison of strains, piezoelectric potentials and piezoelectric fields in the two crystal types of nanowire heterostructures is presented. For each crystal type, three different forms of heterostructures-core-shell, axial superlattice, and quantum dot nanowire heterostructures-are considered. In the studied nanowire heterostructures, the principal strains are found to be insensitive to the change in the crystal structure. However, the shear strains in the zincblende and wurtzite nanowire heterostructures can be very different. All the studied nanowire heterostructures are found to exhibit a piezoelectric field along the nanowire axis. The piezoelectric field is in general much stronger in a wurtzite nanowire heterostructure than in its corresponding zincblende heterostructure. Our results are expected to be particularly important for analyzing and understanding the properties of epitaxially grown nanowire heterostructures and for applications in nanowire electronics, optoelectronics, and biochemical sensing. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Elastic and piezoelectric properties of zincblende and wurtzite crystalline nanowire heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Boxberg, Fredrik [Division of Solid State Physics, Lund University (Sweden); Soendergaard, Niels [Division of Mathematical Physics, Lund University (Sweden); Xu, H.Q. [Department of Electronics and Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing (China); Division of Solid State Physics, Lund University (Sweden)

    2012-09-04

    The elastic and piezoelectric properties of zincblende and wurtzite crystalline InAs/InP nanowire heterostructures have been studied using electro-elastically coupled continuum elasticity theory. A comprehensive comparison of strains, piezoelectric potentials and piezoelectric fields in the two crystal types of nanowire heterostructures is presented. For each crystal type, three different forms of heterostructures - core-shell, axial superlattice, and quantum dot nanowire heterostructures - are considered. In the studied nanowire heterostructures, the principal strains are found to be insensitive to the change in the crystal structure. However, the shear strains in the zincblende and wurtzite nanowire heterostructures can be very different. All the studied nanowire heterostructures are found to exhibit a piezoelectric field along the nanowire axis. The piezoelectric field is in general much stronger in a wurtzite nanowire heterostructure than in its corresponding zincblende heterostructure. Our results are expected to be particularly important for analyzing and understanding the properties of epitaxially grown nanowire heterostructures and for applications in nanowire electronics, optoelectronics, and biochemical sensing. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Performance enhancement in p-channel charge-trapping flash memory devices with Si/Ge super-lattice channel and band-to-band tunneling induced hot-electron injection

    International Nuclear Information System (INIS)

    Liu, Li-Jung; Chang-Liao, Kuei-Shu; Jian, Yi-Chuen; Wang, Tien-Ko; Tsai, Ming-Jinn

    2013-01-01

    P-channel charge-trapping flash memory devices with Si, SiGe, and Si/Ge super-lattice channel are investigated in this work. A Si/Ge super-lattice structure with extremely low roughness and good crystal structure is obtained by precisely controlling the epitaxy thickness of Ge layer. Both programming and erasing (P/E) speeds are significantly improved by employing this Si/Ge super-lattice channel. Moreover, satisfactory retention and excellent endurance characteristics up to 10 6 P/E cycles with 3.8 V memory window show that the degradation on reliability properties is negligible when super-lattice channel is introduced. - Highlights: ► A super-lattice structure is proposed to introduce more Ge content into channel. ► Super-lattice structure possesses low roughness and good crystal structure. ► P-channel flash devices with Si, SiGe, and super-lattice channel are investigated. ► Programming/erasing speeds are significantly improved. ► Reliability properties can be kept for device with super-lattice channel

  20. Performance enhancement in p-channel charge-trapping flash memory devices with Si/Ge super-lattice channel and band-to-band tunneling induced hot-electron injection

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Li-Jung [Department of Engineering and System Science, National Tsing Hua University, 101, Sec. 2, Kuang-Fu Rd., Hsinchu 30013, Taiwan, ROC (China); Chang-Liao, Kuei-Shu, E-mail: Lkschang@ess.nthu.edu.tw [Department of Engineering and System Science, National Tsing Hua University, 101, Sec. 2, Kuang-Fu Rd., Hsinchu 30013, Taiwan, ROC (China); Jian, Yi-Chuen; Wang, Tien-Ko [Department of Engineering and System Science, National Tsing Hua University, 101, Sec. 2, Kuang-Fu Rd., Hsinchu 30013, Taiwan, ROC (China); Tsai, Ming-Jinn [Electronics and Opto-electronics Research Laboratories, Industrial Technology Research Institute, 195, Sec. 4, Chung Hsing Rd., Chutung, Hsinchu 31040, Taiwan, ROC (China)

    2013-04-30

    P-channel charge-trapping flash memory devices with Si, SiGe, and Si/Ge super-lattice channel are investigated in this work. A Si/Ge super-lattice structure with extremely low roughness and good crystal structure is obtained by precisely controlling the epitaxy thickness of Ge layer. Both programming and erasing (P/E) speeds are significantly improved by employing this Si/Ge super-lattice channel. Moreover, satisfactory retention and excellent endurance characteristics up to 10{sup 6} P/E cycles with 3.8 V memory window show that the degradation on reliability properties is negligible when super-lattice channel is introduced. - Highlights: ► A super-lattice structure is proposed to introduce more Ge content into channel. ► Super-lattice structure possesses low roughness and good crystal structure. ► P-channel flash devices with Si, SiGe, and super-lattice channel are investigated. ► Programming/erasing speeds are significantly improved. ► Reliability properties can be kept for device with super-lattice channel.

  1. FEM for modelling 193 nm excimer laser treatment of SiO{sub 2}/Si/Si{sub (1-x)}Ge{sub x} heterostructures on SOI substrates

    Energy Technology Data Exchange (ETDEWEB)

    Conde, J.C.; Chiussi, S.; Gontad, F.; Gonzalez, P. [Dpto. Fisica Aplicada, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, 36310 Vigo (Spain); Martin, E. [Dpto. de Mecanica, Maquinas, Motores Termicos y Fluidos, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, 36310 Vigo (Spain)

    2011-03-15

    Research on epitaxial crystalline silicon (c-Si) and silicon-germanium (Si{sub 1-x}Ge{sub x}) alloys growth and annealing for microelectronic purposes, such as Micro- or Nano-Electro-Mechanical Systems (MEMS or NEMS) and Silicon-On-Nothing (SON) devices is continuously in progress. Laser assisted annealing techniques using commercial ArF Excimer Laser sources are based on ultra-rapid heating and cooling cycles induced by the 193 nm pulses of 20 ns, which are absorbed in the near surface region of the heterostructures. During and after the absorption of these laser pulses, complex physical processes appear that strongly depend on sample structure and applied laser pulse energy densities. The control of the experimental parameters is therefore a key task for obtaining high quality alloys. The Finite ElementsMethod (FEM) is a powerful tool for the optimization of such treatments, because it provides the spatial and temporal temperature fields that are produced by the laser pulses. In this work, we have used a FEM commercial software, to predict the temperatures gradients induced by ArF excimer laser over a wide energy densities range, 0.1<{phi}<0.4 J/cm{sup 2}, on different SiO{sub 2}/Si/Si{sub (1-x)}Ge{sub (x)} thin films deposited on SOI substrate. These numerical results allow us to predict the threshold energies needed to reach the melting point (MP) of the Si and SiGe alloy without oxidation of the thin films system. Therefore, it is possible to optimize the conditions to achieve high quality epitaxy films. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Base Metal Co-Fired Multilayer Piezoelectrics

    Directory of Open Access Journals (Sweden)

    Lisheng Gao

    2016-03-01

    Full Text Available Piezoelectrics have been widely used in different kinds of applications, from the automobile industry to consumer electronics. The novel multilayer piezoelectrics, which are inspired by multilayer ceramic capacitors, not only minimize the size of the functional parts, but also maximize energy efficiency. Development of multilayer piezoelectric devices is at a significant crossroads on the way to achieving low costs, high efficiency, and excellent reliability. Concerning the costs of manufacturing multilayer piezoelectrics, the trend is to replace the costly noble metal internal electrodes with base metal materials. This paper discusses the materials development of metal co-firing and the progress of integrating current base metal chemistries. There are some significant considerations in metal co-firing multilayer piezoelectrics: retaining stoichiometry with volatile Pb and alkaline elements in ceramics, the selection of appropriate sintering agents to lower the sintering temperature with minimum impact on piezoelectric performance, and designing effective binder formulation for low pO2 burnout to prevent oxidation of Ni and Cu base metal.

  3. Magnetic surfaces, thin films, and multilayers

    International Nuclear Information System (INIS)

    Parkin, S.S.P.; Renard, J.P.; Shinjo, T.; Zinn, W.

    1992-01-01

    This paper details recent developments in the magnetism of surfaces, thin films and multilayers. More than 20 invited contributions and more than 60 contributed papers attest to the great interest and vitality of this subject. In recent years the study of magnetic surfaces, thin films and multilayers has undergone a renaissance, partly motivated by the development of new growth and characterization techniques, but perhaps more so by the discovery of many exciting new properties, some quite unanticipated. These include, most recently, the discovery of enormous values of magnetoresistance in magnetic multilayers far exceeding those found in magnetic single layer films and the discovery of oscillatory interlayer coupling in transition metal multilayers. These experimental studies have motivated much theoretical work. However these developments are to a large extent powered by materials engineering and our ability to control and understand the growth of thin layers just a few atoms thick. The preparation of single crystal thin film layers and multilayers remains important for many studies, in particular, for properties dependent. These studies obviously require engineering not just a layer thicknesses but of lateral dimensions as well. The properties of such structures are already proving to be a great interest

  4. High-resolution X-ray Multilayers

    International Nuclear Information System (INIS)

    Martynov, V.V.; Platonov, Yu.; Kazimirov, A.; Bilderback, D.H.

    2004-01-01

    Two new approaches are taken in multilayer fabrication to help bridge the gap in bandwidth between traditional multilayers (1 to 2%) and perfect crystals (0.01%). The first approach is based on creating many layers of low-contrast Al2O3/ B4C materials. The second approach is based on using multilayer structures with a small d-spacing using traditional W/B4C and Mo/B4C materials. With 8 keV x-rays on the Chess A2 beamline, we measured a bandwidth of 0.27% with a reflectivity of 40% and a Darwin width of 17 arc seconds from a 26 A d-spacing multilayer with 800 bi-layers of Al2O3/B4C using the low-contrast approach. On the other hand, the short period approach with a W/B4C multilayer and a 14.8 A d-spacing showed a resolution of 0.5 % and a reflectivity of 58.5%. Two more Mo/B4C samples with d-spacings of 15 A and 20 A showed energy resolutions of 0.25% and 0.52% with corresponding reflectivities of 39% and 66%. Thus we observe that both methods can produce useful x-ray optical components

  5. Refractive index contrast in porous silicon multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Nava, R.; Mora, M.B. de la; Tagueena-Martinez, J. [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, Temixco, Morelos (Mexico); Rio, J.A. del [Centro de Investigacion en Energia, Universidad Nacional Autonoma de Mexico, Temixco, Morelos (Mexico); Centro Morelense de Innovacion y Transferencia Tecnologica, Consejo de Ciencia y Tecnologia del Estado de Morelos (Mexico)

    2009-07-15

    Two of the most important properties of a porous silicon multilayer for photonic applications are flat interfaces and a relative large refractive index contrast between layers in the optical wavelength range. In this work, we studied the effect of the current density and HF electrolyte concentration on the refractive index of porous silicon. With the purpose of increasing the refractive index contrast in a multilayer, the refractive index of porous silicon produced at low current was studied in detail. The current density applied to produce the low porosity layers was limited in order to keep the electrolyte flow through the multilayer structure and to avoid deformation of layer interfaces. We found that an electrolyte composed of hydrofluoric acid, ethanol and glycerin in a ratio of 3:7:1 gives a refractive index contrast around 1.3/2.8 at 600 nm. Several multilayer structures with this refractive index contrast were fabricated, such as dielectric Bragg mirrors and microcavities. Reflectance spectra of the structures show the photonic quality of porous silicon multilayers produced under these electrochemical conditions. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Transmission fingerprints in quasiperiodic magnonic multilayers

    Science.gov (United States)

    Coelho, I. P.; Vasconcelos, M. S.; Bezerra, C. G.

    2011-12-01

    In this paper we investigated the influence of mirror symmetry on the transmission spectra of quasiperiodic magnonic multilayers arranged according to Fibonacci, Thue-Morse and double period quasiperiodic sequences. We consider that the multilayers composed of two simple cubic Heisenberg ferromagnets with bulk exchange constants JA and JB and spin quantum numbers SA and SB, respectively. The multilayer structure is surrounded by two semi-infinite slabs of a third Heisenberg ferromagnetic material with exchange constant JC and spin quantum number SC. For simplicity, the lattice constant has the same value a in each material, corresponding to epitaxial growth at the interfaces. The transfer matrix treatment was used for the exchange-dominated regime, taking into account the random phase approximation (RPA). Our numerical results illustrate the effects of mirror symmetry on (i) transmission spectra and (ii) transmission fingerprints.

  7. Multilayer cladding with hyperbolic dispersion for plasmonic waveguides

    DEFF Research Database (Denmark)

    Babicheva, Viktoriia; Shalaginov, Mikhail Y.; Ishii, Satoshi

    2015-01-01

    We study the properties of plasmonic waveguides with a dielectric core and multilayer metal-dielectric claddings that possess hyperbolic dispersion. The waveguides hyperbolic multilayer claddings show better performance in comparison to conventional plasmonic waveguides. © OSA 2015....

  8. Unipolar Vertical Transport in GaN/AlGaN/GaN Heterostructures

    OpenAIRE

    Nath, D. N.; Park, P. S.; Yang, Z. C.; Rajan, S.

    2013-01-01

    In this letter, we report on unipolar vertical transport characteristics in c-plane GaN/AlGaN/GaN heterostructures. Vertical current in heterostructures with random alloy barriers was found to be independent of dislocation density and heterostructure barrier height, and significantly higher than theoretical estimates. Percolation-based transport due to random alloy fluctuations in the ternary AlGaN is suggested as the dominant transport mechanism, and confirmed through experiments showing tha...

  9. Ferroelectric-Driven Performance Enhancement of Graphene Field-Effect Transistors Based on Vertical Tunneling Heterostructures.

    Science.gov (United States)

    Yuan, Shuoguo; Yang, Zhibin; Xie, Chao; Yan, Feng; Dai, Jiyan; Lau, Shu Ping; Chan, Helen L W; Hao, Jianhua

    2016-12-01

    A vertical graphene heterostructure field-effect transistor (VGHFET) using an ultrathin ferroelectric film as a tunnel barrier is developed. The heterostructure is capable of providing new degrees of tunability and functionality via coupling between the ferroelectricity and the tunnel current of the VGHFET, which results in a high-performance device. The results pave the way for developing novel atomic-scale 2D heterostructures and devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Advanced Semiconductor Heterostructures Novel Devices, Potential Device Applications and Basic Properties

    CERN Document Server

    Stroscio, Michael A

    2003-01-01

    This volume provides valuable summaries on many aspects of advanced semiconductor heterostructures and highlights the great variety of semiconductor heterostructures that has emerged since their original conception. As exemplified by the chapters in this book, recent progress on advanced semiconductor heterostructures spans a truly remarkable range of scientific fields with an associated diversity of applications. Some of these applications will undoubtedly revolutionize critically important facets of modern technology. At the heart of these advances is the ability to design and control the pr

  11. Thermoelectric properties of IV–VI-based heterostructures and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Borges, P.D., E-mail: pabloborges@ufv.br [Instituto de Ciências Exatas e Tec., Universidade Federal de Viçosa, Rio Paranaíba, MG (Brazil); Department of Physics, Texas State University, San Marcos, TX 78666 (United States); Petersen, J.E.; Scolfaro, L. [Department of Physics, Texas State University, San Marcos, TX 78666 (United States); Leite Alves, H.W. [Departamento de Ciências Naturais, Universidade Federal de São João Del Rei, Caixa Postal 110, São João Del Rei 36300-000, MG (Brazil); Myers, T.H. [Department of Physics, Texas State University, San Marcos, TX 78666 (United States)

    2015-07-15

    Doping in a manner that introduces anisotropy in order to reduce thermal conductivity is a significant focus in thermoelectric research today. By solving the semiclassical Boltzmann transport equations in the constant scattering time (τ) approximation, in conjunction with ab initio electronic structure calculations, within Density Functional Theory, we compare the Seebeck coefficient (S) and figure of merit (ZT) of bulk PbTe to PbTe/SnTe/PbTe heterostructures and PbTe doping superlattices (SLs) with periodically doped planes. Bismuth and Thallium were used as the n- and p-type impurities, respectively. The effects of carrier concentration are considered via chemical potential variation in a rigid band approximation. The impurity bands near the Fermi level in the electronic structure of PbTe SLs are of Tl s- and Bi p-character, and this feature is independent of the doping concentration or the distance between impurity planes. We observe the impurity bands to have a metallic nature in the directions perpendicular to the doping planes, yet no improvement on the values of ZT is found when compared to bulk PbTe. For the PbTe/SnTe/PbTe heterostructures, the calculated S presents good agreement with recent experimental data, and an anisotropic behavior is observed for low carrier concentrations (n<10{sup 18} cm{sup −3}). A large value of ZT{sub ||} (parallel to the growth direction) of 3.0 is predicted for n=4.7×10{sup 18} cm{sup −3} and T=700 K, whereas ZT{sub p} (perpendicular to the growth direction) is found to peak at 1.5 for n=1.7×10{sup 17} cm{sup −3}. Both electrical conductivity enhancement and thermal conductivity reduction are analyzed. - Graphical abstract: Figure of merit for PbTe/SnTe/PbTe heterostructure along the [0 0 1] direction, P.D. Borges, J.E. Petersen, L. Scolfaro, H.W. Leite Alves, T.H. Myers, Improved thermoelectric properties of IV–VI-based heterostructures and superlattices. - Highlights: • Thermoelectric properties of IV

  12. In-plane heterostructures of Sb/Bi with high carrier mobility

    Science.gov (United States)

    Zhao, Pei; Wei, Wei; Sun, Qilong; Yu, Lin; Huang, Baibiao; Dai, Ying

    2017-06-01

    In-plane two-dimensional (2D) heterostructures have been attracting public attention due to their distinctive properties. However, the pristine materials that can form in-plane heterostructures are reported only for graphene, hexagonal BN, transition-metal dichalcogenides. It will be of great significance to explore more suitable 2D materials for constructing such ingenious heterostructures. Here, we demonstrate two types of novel seamless in-plane heterostructures combined by pristine Sb and Bi monolayers by means of first-principle approach based on density functional theory. Our results indicate that external strain can serve as an effective strategy for bandgap engineering, and the transition from semiconductor to metal occurs when a compressive strain of -8% is applied. In addition, the designed heterostructures possess direct band gaps with high carrier mobility (˜4000 cm2 V-1 s-1). And the mobility of electrons and holes have huge disparity along the direction perpendicular to the interface of Sb/Bi in-plane heterostructures. It is favorable for carriers to separate spatially. Finally, we find that the band edge positions of Sb/Bi in-plane heterostructures can meet the reduction potential of hydrogen generation in photocatalysis. Our results not only offer alternative materials to construct versatile in-plane heterostructures, but also highlight the applications of 2D in-plane heterostructures in diverse nanodevices and photocatalysis.

  13. Electronic properties of phosphorene/graphene heterostructures: Effect of external electric field

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Sumandeep; Srivastava, Sunita; Tankeshwar, K. [Department of Physics, Panjab University, Chandigarh-160014 (India); Kumar, Ashok [Centre for Physical Sciences, School of Basic and Applied Sciences, Central University of Punjab, Bathinda, India 151001 (India)

    2016-05-23

    We report the electronic properties of electrically gated heterostructures of black and blue phosphorene with graphene. The heterostructure of blue phosphorene with graphene is energetically more favorable than black phospherene/graphene. However, both are bonded by weak interlayer interactions. Graphene induces the Dirac cone character in both heterostructure which shows tunabilities with external electric field. It is found that Dirac cone get shifted depending on the polarity of external electric field that results into the so called self induced p-type or n-type doping effect. These features have importance in the fabrication of nano-electronic devices based on the phosphorene/graphene heterostructures.

  14. The effect of fluorine in low thermal budget polysilicon emitters for SiGe heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Schiz, F.J.W.

    1999-03-01

    results are explained by the different evolution of defects in as-deposited α-Si and p-Si. The application of fluorine in low thermal budget polysilicon emitters is demonstrated ill a novel self-aligned SiGe heterojunction bipolar transistor concept which is implemented using selective and non-selective epitaxy. The process has the advantage of layer growth ill a single epitaxy step, no growth interfaces in the depletion regions, and oxide isolation as all intrinsic part of the device structure. The device electrical results demonstrate the feasibility of the transistor concept. A detailed analysis of leakage currents is performed and a correlation made with cross-section TEM micrographs. It is shown that E/C leakage is due to punch through at the perimeter of the transistor where the SiGe base is thinner. E/B is explained by the penetration of the E/B depletion region into the extrinsic at the perimeter of the emitter. By directing the extrinsic base implant into single crystal material at the perimeter of the base, both leakage mechanisms can be avoided. (author)

  15. Magnetic depth profiling of Fe/Au multilayer using neutron ...

    Indian Academy of Sciences (India)

    We present unpolarized and polarized neutron reflectometry data on Fe/Au multilayer sample for characterizing the layer structure and magnetic moment density profile. Fe/Au multilayer shows strong spin-dependent scattering at interfaces, making it a prospective GMR material. Fe/Au multilayer with bilayer thickness of 130 ...

  16. Multiferroicity in oxide thin films and heterostructures

    International Nuclear Information System (INIS)

    Glavic, Artur

    2012-01-01

    In this work a variety of different systems of transition metal oxides ABO 3 (perovskite materials, where B stands for a transition metal and A for a rare earth element) were produced as thin films and heterostructures and analyzed for the structural, magnetic and ferroelectric properties. For the epitaxial film preparation mostly pulse laser deposition (PLD) was applied. For one series high pressure oxide sputter deposition was used as well. The bulk multiferroics TbMnO 3 and DyMnO 3 , which develop their electric polarization due to a cycloidal magnetic order, have been prepared as single layers with thicknesses between 2 and 200 nm on YAlO 3 substrates using PLD and sputter deposition. The structural characterization of the surfaces and crystal structure where performed using X-ray reflectometry and diffraction, respectively. These yielded low surface roughness and good epitaxial growth. The magnetic behavior was macroscopically measured with SQUID magnetometry and microscopically with polarized neutron diffraction and resonant magnetic X-ray scattering. While all investigated samples showed antiferromagnetic order, comparable with the collinear magnetic phase of their bulk materials, only the sputter deposited samples exhibited the multiferroic low temperature cycloidal order. The investigation of the optical second harmonic generation in a TbMnO 3 sample could proof the presence of a ferroelectric order in the low temperature phase. The respective transition temperatures of the thin films have been very similar to those of the bulk materials. In contrast an increase in the rare earth ordering temperature has been observed, which reduces the Mn order slightly, an effect not known from bulk TbMnO 3 crystals. The coupling of the antiferromagnetic order in TbMnO 3 to ferromagnetic layers of LaCoO 3 was investigated in super-lattices containing 20 bilayers produced with PLD on the same substrates. The SQUID magnetometry yielded a strong influence of the

  17. Capas de SiGe policristalino hidrogenado y su aplicación en transistores de película delgada

    Directory of Open Access Journals (Sweden)

    Rodríguez, A.

    2004-04-01

    Full Text Available The hydrogenation of polycrystalline SiGe layers, obtained by solid phase crystallization, by an electron ciclotron resonance hydrogen plasma and the influence of this hydrogenation process on the electrical characteristics of thin film transistors fabricated using this material as active layer have been studied. The hydrogenation processes were carried out at 150 and 250 ºC for several times, up to 11 hours. Infrared transmission spectra of these samples show only the absorption bands corresponding to Si-H bonds, indicating that hydrogen atoms are bonded mainly to silicon atoms. Ultraviolet reflectance measurements show that the surface damage caused by the plasma exposure increases as the Ge content of the film does. The transistors fabricated using polycrystalline SiGe films as active layer show a degradation phenomenon, consisting of a progressive decrease of the drain current at constant gate and drain bias. The degradation slows down as the hydrogenation time increases at constant temperature.

    En este trabajo se ha caracterizado el proceso de hidrogenación en un plasma generado por resonancia ciclotrónica de electrones de capas de SiGe policristalino obtenidas mediante cristalización en fase sólida y el efecto de la hidrogenación en las características eléctricas de transistores de película delgada fabricados usando dicho material. Los procesos de hidrogenación se realizaron a 150 y 250 ºC, con duraciones de hasta 11 horas. Los espectros de transmitancia en infrarrojo muestran solamente las bandas de absorción características de los enlaces Si-H. Estas bandas indican que el hidrógeno se incorpora al material enlazándose principalmente con los átomos de silicio. Las medidas de reflectancia en el ultravioleta indican que se crea daño en la superficie de la muestra y que éste aumenta a medida que lo hace el contenido en Ge. Los transistores de película delgada con capa activa de SiGe policristalino muestran un fen

  18. Trivalued Memory Circuit Using Metal-Oxide-Semiconductor Field-Effect Transistor Bipolar-Junction-Transistor Negative-Differential-Resistance Circuits Fabricated by Standard SiGe Process

    Science.gov (United States)

    Gan, Kwang-Jow; Tsai, Cher-Shiung; Liang, Dong-Shong; Wen, Chun-Ming; Chen, Yaw-Hwang

    2006-09-01

    A trivalued memory circuit based on two cascoded metal-oxide-semiconductor field-effect transistor bipolar-junction-transistor negative-differential-resistance (MOS-BJT-NDR) devices is investigated. The MOS-BJT-NDR device is made of MOS and BJT devices, but it can show the NDR current-voltage characteristic by suitably arranging the MOS parameters. We demonstrate a trivalued memory circuit using the two-peak MOS-BJT-NDR circuit as the driver and a resistor as the load. The MOS-BJT-NDR devices and memory circuits are fabricated by the standard 0.35 μm SiGe process.

  19. Abrupt Schottky Junctions in Al/Ge Nanowire Heterostructures.

    Science.gov (United States)

    Kral, S; Zeiner, C; Stöger-Pollach, M; Bertagnolli, E; den Hertog, M I; Lopez-Haro, M; Robin, E; El Hajraoui, K; Lugstein, A

    2015-07-08

    In this Letter we report on the exploration of axial metal/semiconductor (Al/Ge) nanowire heterostructures with abrupt interfaces. The formation process is enabled by a thermal induced exchange reaction between the vapor-liquid-solid grown Ge nanowire and Al contact pads due to the substantially different diffusion behavior of Ge in Al and vice versa. Temperature-dependent I-V measurements revealed the metallic properties of the crystalline Al nanowire segments with a maximum current carrying capacity of about 0.8 MA/cm(2). Transmission electron microscopy (TEM) characterization has confirmed both the composition and crystalline nature of the pure Al nanowire segments. A very sharp interface between the ⟨111⟩ oriented Ge nanowire and the reacted Al part was observed with a Schottky barrier height of 361 meV. To demonstrate the potential of this approach, a monolithic Al/Ge/Al heterostructure was used to fabricate a novel impact ionization device.

  20. Novel heterostructured Ge nanowires based on polytype transformation.

    Science.gov (United States)

    Vincent, Laetitia; Patriarche, Gilles; Hallais, Géraldine; Renard, Charles; Gardès, Cyrille; Troadec, David; Bouchier, Daniel

    2014-08-13

    We report on a strain-induced phase transformation in Ge nanowires under external shear stresses. The resulted polytype heterostructure may have great potential for photonics and thermoelectric applications. ⟨111⟩-oriented Ge nanowires with standard diamond structure (3C) undergo a phase transformation toward the hexagonal diamond phase referred as the 2H-allotrope. The phase transformation occurs heterogeneously on shear bands along the length of the nanowire. The structure meets the common phenomenological criteria of a martensitic phase transformation. This point is discussed to initiate an on going debate on the transformation mechanisms. The process results in unprecedented quasiperiodic heterostructures 3C/2H along the Ge nanowire. The thermal stability of those 2H domains is also studied under annealing up to 650 °C by in situ TEM.

  1. High ionic conductivity in confined bismuth oxide-based heterostructures

    Directory of Open Access Journals (Sweden)

    Simone Sanna

    2016-12-01

    Full Text Available Bismuth trioxide in the cubic fluorite phase (δ-Bi2O3 exhibits the highest oxygen ionic conductivity. In this study, we were able to stabilize the pure δ-Bi2O3 at low temperature with no addition of stabilizer but only by engineering the interface, using highly coherent heterostructures made of alternative layers of δ-Bi2O3 and Yttria Stabilized Zirconia (YSZ, deposited by pulsed laser deposition. The resulting [δ-Bi2O3/YSZ] heterostructures are found to be stable over a wide temperature range (500-750 °C and exhibits stable high ionic conductivity over a long time comparable to the value of the pure δ-Bi2O3, which is approximately two orders of magnitude higher than the conductivity of YSZ bulk.

  2. Giant magnetoelectric effect in pure manganite-manganite heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Paul, Sanjukta; Pankaj, Ravindra; Yarlagadda, Sudhakar; Majumdar, Pinaki; Littlewood, Peter B.

    2017-11-01

    Obtaining strong magnetoelectric couplings in bulk materials and heterostructures is an ongoing challenge. We demonstrate that manganite heterostructures of the form (Insulator) /(LaMnO3)(n)/Interface/(CaMnO3)(n)/(Insulator) show strong multiferroicity in magnetic manganites where ferroelectric polarization is realized by charges leaking from LaMnO3 to CaMnO3 due to repulsion. Here, an effective nearest-neighbor electron-electron (electron-hole) repulsion (attraction) is generated by cooperative electron-phonon interaction. Double exchange, when a particle virtually hops to its unoccupied neighboring site and back, produces magnetic polarons that polarize antiferromagnetic regions. Thus a striking giant magnetoelectric effect ensues when an external electrical field enhances the electron leakage across the interface.

  3. High ionic conductivity in confined bismuth oxide-based heterostructures

    DEFF Research Database (Denmark)

    Sanna, Simone; Esposito, Vincenzo; Christensen, Mogens

    2016-01-01

    Bismuth trioxide in the cubic fluorite phase (δ-Bi2O3) exhibits the highest oxygen ionic conductivity. In this study, we were able to stabilize the pure -Bi2O3 at low temperature with no addition of stabilizer but only by engineering the interface, using highly coherent heterostructures made...... of alternative layers of δ-Bi2O3 and Yttria Stabilized Zirconia (YSZ), deposited by pulsed laser deposition. The resulting [δ-Bi2O3=YSZ] heterostructures are found to be stable over a wide temperature range (500-750 °C) and exhibits stable high ionic conductivity over a long time comparable to the value...... of the pure δ-Bi2O3, which is approximately two orders of magnitude higher than the conductivity of YSZ bulk....

  4. Efficient photocarrier injection in a transition metal oxide heterostructure

    CERN Document Server

    Muraoka, Y; Ueda, Y; Hiroi, Z

    2002-01-01

    An efficient method for doping a transition metal oxide (TMO) with hole carriers is presented: photocarrier injection (PCI) in an oxide heterostructure. It is shown that an insulating vanadium dioxide (VO sub 2) film is rendered metallic under light irradiation by PCI from an n-type titanium dioxide (TiO sub 2) substrate doped with Nb. Consequently, a large photoconductivity, which is exceptional for TMOs, is found in the VO sub 2 /TiO sub 2 :Nb heterostructure. We propose an electronic band structure where photoinduced holes created in TiO sub 2 :Nb can be transferred into the filled V 3d band via the low-lying O 2p band of VO sub 2. (letter to the editor)

  5. Multifunctional high-performance van der Waals heterostructures

    Science.gov (United States)

    Huang, Mingqiang; Li, Shengman; Zhang, Zhenfeng; Xiong, Xiong; Li, Xuefei; Wu, Yanqing

    2017-12-01

    A range of novel two-dimensional materials have been actively explored for More Moore and More-than-Moore device applications because of their ability to form van der Waals heterostructures with unique electronic properties. However, most of the reported electronic devices exhibit insufficient control of multifunctional operations. Here, we leverage the band-structure alignment properties of narrow-bandgap black phosphorus and large-bandgap molybdenum disulfide to realize vertical heterostructures with an ultrahigh rectifying ratio approaching 106 and on-off ratio up to 107. Furthermore, we design and fabricate tunable multivalue inverters, in which the output logic state and window of the mid-logic can be controlled by specific pairs of channel length and, most importantly, by the electric field, which shifts the band-structure alignment across the heterojunction. Finally, high gains over 150 are achieved in the inverters with optimized device geometries, showing great potential for future logic applications.

  6. Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures

    Science.gov (United States)

    Yankowitz, Matthew; Larentis, Stefano; Kim, Kyounghwam; Xue, Jiamin; McKenzie, Devin; Huang, Shengqiang; Paggen, Marina; Ali, Mazhar; Cava, Robert; Tutuc, Emanuel; Leroy, Brian J.

    2015-03-01

    Recently, semiconducting materials in the transition metal dichalcogenide (TMD) family have gained great popularity for use in novel graphene-based heterostructure devices such as tunneling transistors, highly efficient flexible photovoltaic devices, and nonvolatile memory cells. TMDs have also been explored as alternatives to hexagonal boron nitride (hBN) as substrates for pristine graphene devices. However, their quality has thus far been significantly worse than comparable hBN devices. We examine graphene on numerous TMD substrates (MoS2, WS2, WSe2, MoTe2) with scanning tunneling microscopy and spectroscopy and find that point and line defects intrinsic to all TMD crystals (both of natural and synthetic origin) result in scattering of electrons in graphene. Our findings suggest that the quality of graphene on TMD heterostructures is limited by the intrinsic crystalline quality of the TMDs.

  7. Characterization of Al{sub x}Ga{sub 1-x}As/GaAs heterostructures for single quantum wells grown by a solid arsenic MOCVD system

    Energy Technology Data Exchange (ETDEWEB)

    Castillo-Ojeda, R. [Universidad Politecnica de Pachuca, Km. 20, Rancho Luna, Ex-Hacienda de Santa Barbara, Municipio de Zempoala, Hidalgo 43830 (Mexico); Diaz-Reyes, J., E-mail: jdiazr2001@yahoo.co [Instituto Politecnico Nacional, Centro de Investigacion en Biotecnologia Aplicada, CIBA-IPN, Ex Hacienda de San Juan Molino, Km. 1.5. Tepetitla, Tlaxcala 90700 (Mexico); Galvan-Arellano, M.; Pena-Sierra, R. [CINVESTAV-IPN, Depto. de Ing. Electrica, SEES. Apdo. 14-740, Mexico, D.F. 07000 (Mexico)

    2011-06-15

    This work presents the results of the growth and characterization of Al{sub x}Ga{sub 1-x}As/GaAs multilayer structures obtained in a metallic-arsenic-based-MOCVD system. The main goal is to explore the ability of the growth system to grow high quality multilayer structures like quantum wells. The use of metallic arsenic could introduce important differences in the growth process due to the absence of the hydride group V precursor (AsH{sub 3}), which manifests in the electrical and optical characteristics of both GaAs and Al{sub x}Ga{sub 1-x}As layers. The characterization of these epilayers and structures was performed using low-temperature photoluminescence, Hall effect measurements, X-ray diffraction, Raman spectroscopy, secondary ion mass spectroscopy (SIMS) and Atomic Force Microscopy (AFM). - Research highlights: {yields} This work is reported the growth of AlxGa1-xAs/GaAs/AlxGa1-xAs heterostructures by a solid arsenic based MOCVD system. {yields} The results obtained with this system are comparable with those obtained with the traditional arsine based growth system. {yields} The main limitation of the alternative MOCVD system is related to the lack of monoatomic hydrogen on the growth surface that acts modifying the surface kinetics and enhancing the carbon incorporation. {yields} The experimental results indicate that it can be grown AlxGa1-xAs using elemental arsenic by MOCVD, which can be used to optoelectronic devices.

  8. Liquid phase epitaxial growth of heterostructured hierarchical MOF thin films

    KAUST Repository

    Chernikova, Valeriya

    2017-05-10

    Precise control of epitaxial growth of MOF-on-MOF thin films, for ordered hierarchical tbo-type structures is demonstrated. The heterostructured MOF thin film was fabricated by successful sequential deposition of layers from two different MOFs. The 2-periodic layers, edge-transitive 4,4-square lattices regarded as supermolecular building layers, were commendably cross-linked using a combination of inorganic/organic and organic pillars.

  9. 2D Vertical Heterostructures for Novel Tunneling Device Applications

    Science.gov (United States)

    2017-03-01

    tunneling has been explored for the symmetric field - effect transistor (symFET) [1, 2], while opposite-band tunneling has been explored for...the interlayer tunnel field - effect transistor (ITFET) [3, 4] and the Esaki diode [5]. Figure 1. (a) Schematic of the heterostructure, with the... Tunneling Field Effect Transistor ," Journal of Applied Physics, vol. 115, p. 074508, 2014. [4] M. O. Li, D. Esseni, J. J. Nahas, D.

  10. Coherent multilayer crystals and method of making

    Science.gov (United States)

    Schuller, I.K.; Falco, C.M.

    A new material consisting of a multilayer crystalline structure is described which is coherent perpendicular to the layers and where each layer is composed of a single crystallilne element. The individual layers may vary from 2A to 100A or more in thickness.

  11. Multilayer Network Planning - A Practical Perspective

    OpenAIRE

    Autenrieth, Achim

    2018-01-01

    The paper presents a pragmatic and practical multilayer network planning approach based on a candidate lightpath auxiliary graph model. The paper discusses, how this approach can be applied to offline network planning as well as dynamic planning and provisioning of services.

  12. Mechanical properties of glass polymer multilayer composite

    Indian Academy of Sciences (India)

    Unknown

    Mechanical properties of glass polymer multilayer composite. A SEAL, N R BOSE, S K DALUI, A K MUKHOPADHYAY*, K K PHANI and. H S MAITI. Central Glass and Ceramic Research Institute, Kolkata 700 032, India. Abstract. The preliminary experimental studies on the comparative behaviour of the deformation ...

  13. Optical and structural study of BST multilayers

    Czech Academy of Sciences Publication Activity Database

    Železný, Vladimír; Chvostová, Dagmar; Pajasová, Libuše; Jelínek, Miroslav; Kocourek, Tomáš; Daniš, S.; Valvoda, V.

    2010-01-01

    Roč. 12, č. 3 (2010), 538-541 ISSN 1454-4164 R&D Projects: GA ČR GA202/07/0591 Institutional research plan: CEZ:AV0Z10100522; CEZ:AV0Z10100520 Keywords : ellipsometry * structure * ferroelectric multilayers Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.412, year: 2010

  14. Lamellar multilayer hexadecylaniline-modified gold nanoparticle ...

    Indian Academy of Sciences (India)

    Organization of hexadecylaniline (HDA)-modified colloidal gold particles at the air-water interface and the formation thereafter of lamellar, multilayer films of gold nanoparticles by the Langmuir-Blodgett technique is described in this paper. Formation of HDA-capped gold nanoparticles is accomplished by a simple biphasic ...

  15. Langmuir Blodgett multilayers and related nanostructures

    Indian Academy of Sciences (India)

    Langmuir Blodgett (LB) process is an important route to the development of organized molecular layered structures of a variety of organic molecules with suitably designed architecture and functionality. LB multilayers have also been used as templates and precursors to develop nano-structured thin films. In this article ...

  16. Josephson plasma resonance in superconducting multilayers

    DEFF Research Database (Denmark)

    Pedersen, Niels Falsig

    1999-01-01

    We derive an analytical solution for the josephson plasma resonance of superconducting multilayers. This analytical solution is derived mainly for low T-c systems with magnetic coupling between the superconducting layers, but many features of our results are more general, and thus an application...... to the recently derived plasma resonance phenomena for high T-c superconductors of the BSCCO type is discussed....

  17. Tunable self-organization of nanocomposite multilayers

    NARCIS (Netherlands)

    Chen, C.Q.; Pei, Y.T.; Shaha, K.P.; Hosson, J.Th.M. De

    2010-01-01

    In this letter we report the controlled growth and microstructural evolution of self-assembled nanocomposite multilayers that are induced by surface ion-impingement. The nanoscale structures together with chemical composition, especially at the growing front, have been investigated with

  18. Transmission fingerprints in quasiperiodic magnonic multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Coelho, I.P. [Departamento de Ensino Superior, Instituto Federal de Educacao, Ciencia e Tecnologia do Maranhao, Imperatriz-MA 65919-050 (Brazil); Departamento de Fisica, Universidade Federal do Rio Grande do Norte, Natal-RN 59072-970 (Brazil); Vasconcelos, M.S. [Escola de Ciencias e Tecnologia, Universidade Federal do Rio Grande do Norte, Natal-RN 59072-970 (Brazil); Bezerra, C.G., E-mail: cbezerra@dfte.ufrn.br [Departamento de Fisica, Universidade Federal do Rio Grande do Norte, Natal-RN 59072-970 (Brazil)

    2011-12-15

    In this paper we investigated the influence of mirror symmetry on the transmission spectra of quasiperiodic magnonic multilayers arranged according to Fibonacci, Thue-Morse and double period quasiperiodic sequences. We consider that the multilayers composed of two simple cubic Heisenberg ferromagnets with bulk exchange constants J{sub A} and J{sub B} and spin quantum numbers S{sub A} and S{sub B}, respectively. The multilayer structure is surrounded by two semi-infinite slabs of a third Heisenberg ferromagnetic material with exchange constant J{sub C} and spin quantum number S{sub C}. For simplicity, the lattice constant has the same value a in each material, corresponding to epitaxial growth at the interfaces. The transfer matrix treatment was used for the exchange-dominated regime, taking into account the random phase approximation (RPA). Our numerical results illustrate the effects of mirror symmetry on (i) transmission spectra and (ii) transmission fingerprints. - Highlights: > We model quasiperiodic magnetic multilayers presenting mirror symmetry. > We investigated the allowed and forbidden bands of magnonic transmission. > Transmission return maps show the influence of mirror symmetry. > Mirror symmetry has no effect on the Fibonacci case. > Mirror symmetry does have effect on the Thue-Morse and double period cases.

  19. Transmission fingerprints in quasiperiodic magnonic multilayers

    International Nuclear Information System (INIS)

    Coelho, I.P.; Vasconcelos, M.S.; Bezerra, C.G.

    2011-01-01

    In this paper we investigated the influence of mirror symmetry on the transmission spectra of quasiperiodic magnonic multilayers arranged according to Fibonacci, Thue-Morse and double period quasiperiodic sequences. We consider that the multilayers composed of two simple cubic Heisenberg ferromagnets with bulk exchange constants J A and J B and spin quantum numbers S A and S B , respectively. The multilayer structure is surrounded by two semi-infinite slabs of a third Heisenberg ferromagnetic material with exchange constant J C and spin quantum number S C . For simplicity, the lattice constant has the same value a in each material, corresponding to epitaxial growth at the interfaces. The transfer matrix treatment was used for the exchange-dominated regime, taking into account the random phase approximation (RPA). Our numerical results illustrate the effects of mirror symmetry on (i) transmission spectra and (ii) transmission fingerprints. - Highlights: → We model quasiperiodic magnetic multilayers presenting mirror symmetry. → We investigated the allowed and forbidden bands of magnonic transmission. → Transmission return maps show the influence of mirror symmetry. → Mirror symmetry has no effect on the Fibonacci case. → Mirror symmetry does have effect on the Thue-Morse and double period cases.

  20. Lamellar multilayer hexadecylaniline-modified gold nanoparticle

    Indian Academy of Sciences (India)

    Organization of hexadecylaniline (HDA)-modified colloidal gold particles at the air-water interface and the formation thereafter of lamellar, multilayer films of gold nanoparticles by the Langmuir-Blodgett technique is described in this paper. Formation of HDA-capped gold nanoparticles is accomplished by a simple biphasic ...

  1. Measure of Node Similarity in Multilayer Networks

    DEFF Research Database (Denmark)

    Møllgaard, Anders; Zettler, Ingo; Dammeyer, Jesper

    2016-01-01

    university.Our analysis is based on data obtained using smartphones equipped with customdata collection software, complemented by questionnaire-based data. The networkof social contacts is represented as a weighted multilayer network constructedfrom different channels of telecommunication as well as data...

  2. Josephson plasma resonance in superconducting multilayers

    DEFF Research Database (Denmark)

    Pedersen, Niels Falsig; Sakai, S

    1998-01-01

    We derive an analytical solution for the Josephson plasma resonance of superconducting multilayers. This analytical solution is derived mainly for low-T-c systems with magnetic coupling between the superconducting layers. but many features of our results are more general, and thus an application...

  3. Josephson plasma resonance in superconducting multilayers

    DEFF Research Database (Denmark)

    Pedersen, Niels Falsig

    1999-01-01

    We derive an analytical solution for the josephson plasma resonance of superconducting multilayers. This analytical solution is derived mainly for low T-c systems with magnetic coupling between the superconducting layers, but many features of our results are more general, and thus an application...

  4. Guided wave sensing of polyelectrolyte multilayers

    DEFF Research Database (Denmark)

    Horvath, R.; Pedersen, H.C.; Cuisinier, F.J.G.

    2006-01-01

    A planar optical waveguide configuration is proposed to monitor the buildup of thick polyelectrolyte multilayers on the surface of the waveguide in aqueous solutions. Instead of detecting the layer by the electromagnetic evanescent field the polyelectrolyte layer acts as an additional waveguiding...... film that is sensed by guided waves instead of evanescent waves. This leads to a considerably improved sensitivity and dynamic range....

  5. Langmuir Blodgett multilayers and related nanostructures

    Indian Academy of Sciences (India)

    Abstract. Langmuir Blodgett (LB) process is an important route to the development of organized molecular layered structures of a variety of organic molecules with suitably designed architecture and functionality. LB multilayers have also been used as templates and precursors to develop nano-structured thin films.

  6. Ceramic-Metal Interfaces in Multilayer Actuators

    DEFF Research Database (Denmark)

    Engell, John; Pedersen, Henrik Guldberg; Andersen, Bjørn

    1996-01-01

    Multilayer actuators consist of a number of piezoelectric or electrostrictive ceramic layers, separated by thin metal electrodes. Thus, the ceramic-metal interface plays an even more important role than for bulk piezoceramics. The performance and durability of the actuator depends closely...

  7. Homogeneous CdTe quantum dots-carbon nanotubes heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Vieira, Kayo Oliveira [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Bettini, Jefferson [Laboratório Nacional de Nanotecnologia, Centro Nacional de Pesquisa em Energia e Materiais, CEP 13083-970, Campinas, SP (Brazil); Ferrari, Jefferson Luis [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil); Schiavon, Marco Antonio, E-mail: schiavon@ufsj.edu.br [Grupo de Pesquisa em Química de Materiais – (GPQM), Departamento de Ciências Naturais, Universidade Federal de São João del-Rei, Campus Dom Bosco, Praça Dom Helvécio, 74, CEP 36301-160, São João del-Rei, MG (Brazil)

    2015-01-15

    The development of homogeneous CdTe quantum dots-carbon nanotubes heterostructures based on electrostatic interactions has been investigated. We report a simple and reproducible non-covalent functionalization route that can be accomplished at room temperature, to prepare colloidal composites consisting of CdTe nanocrystals deposited onto multi-walled carbon nanotubes (MWCNTs) functionalized with a thin layer of polyelectrolytes by layer-by-layer technique. Specifically, physical adsorption of polyelectrolytes such as poly (4-styrene sulfonate) and poly (diallyldimethylammonium chloride) was used to deagglomerate and disperse MWCNTs, onto which we deposited CdTe quantum dots coated with mercaptopropionic acid (MPA), as surface ligand, via electrostatic interactions. Confirmation of the CdTe quantum dots/carbon nanotubes heterostructures was done by transmission and scanning electron microscopies (TEM and SEM), dynamic-light scattering (DLS) together with absorption, emission, Raman and infrared spectroscopies (UV–vis, PL, Raman and FT-IR). Almost complete quenching of the PL band of the CdTe quantum dots was observed after adsorption on the MWCNTs, presumably through efficient energy transfer process from photoexcited CdTe to MWCNTs. - Highlights: • Highly homogeneous CdTe-carbon nanotubes heterostructures were prepared. • Simple and reproducible non-covalent functionalization route. • CdTe nanocrystals homogeneously deposited onto multi-walled carbon nanotubes. • Efficient energy transfer process from photoexcited CdTe to MWCNTs.

  8. First-principles design of epitaxial perovskite heterostructures

    Science.gov (United States)

    Neaton, J. B.

    2003-03-01

    Experimental capabilities now allow layer-by-layer epitaxial growth of perovskite-based oxides with atomic-level control. This makes possible a wide range of novel multifunctional oxide heterostructures, composite systems which promise to play an important role in many contemporary applications. The phenomenology of oxides grown in this geometry is rather complex, and expected to be influenced by composition, interfacial structure and chemistry, internal fields arising from non-bulk electrical boundary conditions, and the considerable strains associated with coherent epitaxy. In this talk, the respective roles of each of these features in selected artificial heterostructures is investigated quantitatively using first-principles density-functional theory within the local density approximation. First, the structure, polarization, phonons, and static dielectric response of several standard perovskite materials, such as BaTiO_3, SrTiO_3, and PbTiO_3, are mapped as as a function of epitaxial misfit strains up to 3%. These results are then used to interpret and design properties of paraelectric/ferroelectric superlattices, such as BaTiO_3/SrTiO3 and PbTiO_3/SrTiO_3; inversion-symmetry breaking heterostructures, such as LaAlO_3/SrTiO_3; and multiferroic thin films, such as BiFeO_3. Comparisons with recent experiments, and implications for future work, are discussed in each case.

  9. GaN/NbN epitaxial semiconductor/superconductor heterostructures

    Science.gov (United States)

    Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D. Scott; Nepal, Neeraj; Downey, Brian P.; Muller, David A.; Xing, Huili G.; Meyer, David J.; Jena, Debdeep

    2018-03-01

    Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors—silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor—an electronic gain element—to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance—a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

  10. M = Mo, W; X = S, Se, Te) heterostructures

    KAUST Repository

    Zhang, Qingyun

    2018-04-16

    Using first-principles calculations, we investigate the electronic properties of the two-dimensional GaX/MX2 (M = Mo, W; X = S, Se, Te) heterostructures. Orbital hybridization between GaX and MX2 is found to result in Rashba splitting at the valence-band edge around the Γ point, which grows for increasing strength of the spin-orbit coupling in the p orbitals of the chalcogenide atoms. The location of the valence-band maximum in the Brillouin zone can be tuned by strain and application of an out-of-plane electric field. The coexistence of Rashba splitting (in-plane spin direction) and band splitting at the K and K′ valleys (out-of-plane spin direction) makes GaX/MX2 heterostructures interesting for spintronics and valleytronics. They are promising candidates for two-dimensional spin-field-effect transistors and spin-valley Hall effect devices. Our findings shed light on the spin-valley coupling in van der Waals heterostructures.

  11. $^{31}$Si Self-Diffusion in Si-Ge Alloys and Si-(B-)C-N Ceramics and Diffusion Studies for Al and Si Beam Developments

    CERN Multimedia

    Nylandsted larsen, A; Voss, T L; Strohm, A

    2002-01-01

    An invaluable method for studying diffusion in solids is the radiotracer technique. However, its applicability had been restricted to radiotracer atoms with half-lives $t_{1/2}$ of about 1~d or longer. Within the framework of IS372 a facility was developed in which short-lived radiotracer atoms ( 5min $\\scriptstyle{\\lesssim}$ $t_{1/2}\\scriptstyle{\\lesssim}$1 d ) can be used. For the implantation of the short-lived tracers the facility is flanged to the ISOLDE beamline, and all post-implantation steps required in the radiotracer technique are done in situ.\\\\ After successful application of this novel technique in diffusion studies of $^{11}$C ($t_{1/2}$ = 20.3 min), this experiment aims at performing self-diffusion studies of $^{31}$Si ($t_{1/2}$ = 2.6~h) in Si--Ge alloys and in amorphous Si--(B--)C--N ceramics.\\\\ Our motivation for measuring diffusion in Si--Ge alloys is their recent technological renaissance as well as the purpose to test the prediction that in these alloys the self-diffusion mechanism chang...

  12. PHOTOELECTRIC PROPERTIES OF HETEROSTRUCTURES BASED ON PEPC AND MEH-PPV FILMS DOPED WITH ZINC OCTABUTYLPHTHALOCYANINE

    Directory of Open Access Journals (Sweden)

    Nicolay Davidenko

    2016-06-01

    Full Text Available Planar organic heterostructures were prepared using poly-N- epoxypropylcarbazole films and poly[2-methoxy-5-(2’-ethylhexyloxy-1,4-phenylenevinylene] by the method of successive deposition adding 2,3,9,10,16,17,23,24-zinc octabutylphthalocyanine. Photoelectric, photodielectric and photovoltaic properties of the heterostructures were studied.

  13. Spin transport properties of partially edge-hydrogenated MoS2 nanoribbon heterostructure

    International Nuclear Information System (INIS)

    Peng, Li; Yao, Kailun; Zhu, Sicong; Ni, Yun; Zu, Fengxia; Wang, Shuling; Guo, Bin; Tian, Yong

    2014-01-01

    We report ab initio calculations of electronic transport properties of heterostructure based on MoS 2 nanoribbons. The heterostructure consists of edge hydrogen-passivated and non-passivated zigzag MoS 2 nanoribbons (ZMoS 2 NR-H/ZMoS 2 NR). Our calculations show that the heterostructure has half-metallic behavior which is independent of the nanoribbon width. The opening of spin channels of the heterostructure depends on the matching of particular electronic orbitals in the Mo-dominated edges of ZMoS 2 NR-H and ZMoS 2 NR. Perfect spin filter effect appears at small bias voltages, and large negative differential resistance and rectifying effects are also observed in the heterostructure.

  14. Investigation of band alignment in Co doped ZnO/ZnO heterostructure

    Science.gov (United States)

    Girish, Rajput, Parasmani; Nand, Mangla; Kumar, Manvendra; Gupta, Mukul; Jha, S. N.; Bhattacharyya, D.; Sahoo, N. K.

    2017-05-01

    The band alignment of Zn0.9Co0.1O/ZnO thin film heterostructure was investigated using photoelectron spectroscopy. The ZnO, Zn0.9Co0.1O and Zn0.9Co0.1O/ZnO thin film heterostructure has been prepared using RF ion beam sputtering, The band offset of prepared heterostructure were calculated form valance band maximum and core level peaks. The valance band and conduction band offset for Zn0.9Co0.1O/ZnO heterostructure thin film were found to be 0.36 eV and 0.51 eV, respectively, which indicates type-II band alignment in the Zn0.9Co0.1O/ZnO heterostructure.

  15. Vacuum-evaporated ferroelectric films and heterostructures of vinylidene fluoride/trifluoroethylene copolymer

    Energy Technology Data Exchange (ETDEWEB)

    Draginda, Yu. A., E-mail: lbf@ns.crys.ras.ru; Yudin, S. G.; Lazarev, V. V.; Yablonskii, S. V.; Palto, S. P. [Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)

    2012-05-15

    The potential of the vacuum method for preparing ferroelectric films and photonic heterostructures from organic materials is studied. Vacuum-evaporated films of fluoropolymers and heterostructures on their basis are obtained and their ferroelectric and spectral properties are studied. In particular, homogeneous films of the well-known piezoelectric polymer polyvinylidene fluoride and ferroelectric material vinylidene fluoride/trifluoroethylene copolymer (P(VDF/TFE)) are produced. Experimental studies of vacuum-evaporated P(VDF/TFE) films confirmed their ferroelectric properties. The heterostructures composed of alternating layers of P(VDF/TFE) copolymer molecules and azodye molecules are fabricated by vacuum evaporation. Owing to the controlled layer thickness and a significant difference in the refractive indices of the P(VDF/TFE) copolymer and azodyes, these heterostructures exhibit properties of photonic crystals. This finding is confirmed by the occurrence of a photonic band in the absorption spectra of the heterostructures.

  16. Measure of Node Similarity in Multilayer Networks

    DEFF Research Database (Denmark)

    Møllgaard, Anders; Zettler, Ingo; Dammeyer, Jesper

    2016-01-01

    The weight of links in a network is often related to the similarity of thenodes. Here, we introduce a simple tunable measure for analysing the similarityof nodes across different link weights. In particular, we use the measure toanalyze homophily in a group of 659 freshman students at a large...... university.Our analysis is based on data obtained using smartphones equipped with customdata collection software, complemented by questionnaire-based data. The networkof social contacts is represented as a weighted multilayer network constructedfrom different channels of telecommunication as well as data...... might bepresent in one layer of the multilayer network and simultaneously be absent inthe other layers. For a variable such as gender, our measure reveals atransition from similarity between nodes connected with links of relatively lowweight to dis-similarity for the nodes connected by the strongest...

  17. Biexciton cascade emission in multilayered organic nanofibers

    Science.gov (United States)

    Evaristo de Sousa, Leonardo; Ferreira da Cunha, Wiliam; Antônio da Silva Filho, Demétrio; de Oliveira Neto, Pedro Henrique

    2018-04-01

    The optical performance of multilayered organic nanofibers results from the dynamics of excited states in the system. Here, we show that the presence of biexcitons is crucial to correctly describe such dynamics. This may be the case even if the intensity of the light source is not high. The cascade emission mediated by biexcitons is mainly responsible for the behavior of the photoluminescence profile in the initial steps after light absorption. By using a combination of Kinetic Monte Carlo model and Genetic Algorithm, we simulate Time-Resolved Photoluminescence measurements of multilayered nanofibers. These simulations are compared with experimental results, thus revealing that the usual singlet exciton recombination is insufficient to reproduce the complete physical picture. Our results also include predictions for the behavior of the biexciton signal. These findings are observed to be valid for a wide temperature range, showing the importance of the biexciton cascade emission in several regimes for organic nanofibers in general.

  18. Polymeric multilayer capsules in drug delivery.

    Science.gov (United States)

    De Cock, Liesbeth J; De Koker, Stefaan; De Geest, Bruno G; Grooten, Johan; Vervaet, Chris; Remon, Jean Paul; Sukhorukov, Gleb B; Antipina, Maria N

    2010-09-17

    Recent advances in medicine and biotechnology have prompted the need to develop nanoengineered delivery systems that can encapsulate a wide variety of novel therapeutics such as proteins, chemotherapeutics, and nucleic acids. Moreover, these delivery systems should be "intelligent", such that they can deliver their payload at a well-defined time, place, or after a specific stimulus. Polymeric multilayer capsules, made by layer-by-layer (LbL) coating of a sacrificial template followed by dissolution of the template, allow the design of microcapsules in aqueous conditions by using simple building blocks and assembly procedures, and provide a previously unmet control over the functionality of the microcapsules. Polymeric multilayer capsules have recently received increased interest from the life science community, and many interesting systems have appeared in the literature with biodegradable components and biospecific functionalities. In this Review we give an overview of the recent breakthroughs in their application for drug delivery.

  19. Topological edge modes in multilayer graphene systems

    KAUST Repository

    Ge, Lixin

    2015-08-10

    Plasmons can be supported on graphene sheets as the Dirac electrons oscillate collectively. A tight-binding model for graphene plasmons is a good description as the field confinement in the normal direction is strong. With this model, the topological properties of plasmonic bands in multilayer graphene systems are investigated. The Zak phases of periodic graphene sheet arrays are obtained for different configurations. Analogous to Su-Schrieffer-Heeger (SSH) model in electronic systems, topological edge plasmon modes emerge when two periodic graphene sheet arrays with different Zak phases are connected. Interestingly, the dispersion of these topological edge modes is the same as that in the monolayer graphene and is invariant as the geometric parameters of the structure such as the separation and period change. These plasmonic edge states in multilayer graphene systems can be further tuned by electrical gating or chemical doping. © 2015 Optical Society of America.

  20. KLASIFIKASI WEBSITE MENGGUNAKAN ALGORITMA MULTILAYER PERCEPTRON

    Directory of Open Access Journals (Sweden)

    Nyoman Purnama

    2014-12-01

    Full Text Available Sistem klasifikasi merupakan proses temu balik informasi yang sangat bergantung dari elemen-elemen penyusunnya.Sistem ini banyak digunakan untuk mengatasi permasalahan segmentasi data. Klasifikasi dapat digunakan pada website sebagaimetode untuk mengelompokkan website. Website merupakan salah satu data yang memiliki informasi yang beraneka-ragam,sehingga pengelompokan data ini penting untuk diteliti. Sistem klasifikasi dimulai dengan melakukan proses pengumpulaninformasi dari halaman website (parsing dan untuk setiap hasil parsing dilakukan proses penghapusan kata henti, stemming,feature selection dengan tf-idf. Hasil dari proses ini berupa fitur yang menjadi inputan algoritma Multilayer Perceptron. Dalamalgoritma ini terjadi proses pembelajaran terhadap pola input masukan dan pembuatan bobot pelatihan. Bobot ini akandigunakan pada proses klasifikasi. Hasil dari penelitian menunjukkan bahwa algoritma Multilayer Perceptron dapatmenghasilkan klasifikasi website dengan akurasi yang bagus. Hal ini dibuktikan dengan beberapa tahapan penelitian yangberbeda dan didapatkan nilai akurasi rata-rata diatas 70%.

  1. Staggered broad-band reflecting multilayers.

    Science.gov (United States)

    Heavens, O S; Liddell, H M

    1966-03-01

    Considerable broadening of the reflectance band of a multilayer stack may be obtained by staggering the layer thicknesses in such a way that they form either an arithmetic or geometric progression. Results are shown for asymmetric and symmetric filters of 15, 25, and 35 layers. The presence of the narrowband transmission peaks exhibited by the symmetric filters is explained, and the advantages of the use of this type of filter as an interference filter is discussed.

  2. Analysis of Fracture Behaviour of Multilayer Pipes

    Czech Academy of Sciences Publication Activity Database

    Nezbedová, E.; Knésl, Zdeněk; Vlach, B.

    2007-01-01

    Roč. 36, č. 5 (2007), s. 207-212 ISSN 1465-8011. [Plastic Pipes /13./. Washington, D. C., 02.10.2006-05.10.2006] R&D Projects: GA ČR GA106/07/1284 Institutional research plan: CEZ:AV0Z20410507 Keywords : multi-layer pipes Subject RIV: JL - Materials Fatigue, Friction Mechanics Impact factor: 0.431, year: 2007

  3. Thermoelastoplastic Deformation of a Multilayer Ball

    Science.gov (United States)

    Murashkin, E. V.; Dats, E. P.

    2017-09-01

    The problem of centrally symmetric deformation of a multilayer elastoplastic ball in the process of successive accretion of preheated layers to its outer surface is considered in the framework of small elastoplastic deformations. The problems of residual stress formation in the elastoplastic ball with an inclusion and a cavity are solved under various mechanical boundary conditions on the inner surface and for prescribed thermal compression distributions. The graphs of residual stress and displacement fields are constructed.

  4. Development of multilayered chitosan-based nanofibers

    OpenAIRE

    Croisier, Florence; Aqil, Abdelhafid; Detrembleur, Christophe; Jérôme, Christine

    2009-01-01

    By combining electrospinning and layer-by-layer deposition techniques, new porous material scaffolds of multilayered, chitosan-based nanofibers were produced. Layer-by-layer (LBL) is a well-known method for surface coating, based on electrostatic interactions. It enables the controllable deposition of a variety of polyelectrolytes including synthetic and natural materials, with designable layer structure, defined layer thickness and size. Electrospinning (ESP) allows the fabrication of po...

  5. Quaternionic Multilayer Perceptron with Local Analyticity

    Directory of Open Access Journals (Sweden)

    Nobuyuki Matsui

    2012-11-01

    Full Text Available A multi-layered perceptron type neural network is presented and analyzed in this paper. All neuronal parameters such as input, output, action potential and connection weight are encoded by quaternions, which are a class of hypercomplex number system. Local analytic condition is imposed on the activation function in updating neurons’ states in order to construct learning algorithm for this network. An error back-propagation algorithm is introduced for modifying the connection weights of the network.

  6. The polymorphic, multilayered and networked urbanised territory

    DEFF Research Database (Denmark)

    Nielsen, Tom

    2015-01-01

    The discussion of the network city has in recent years been supplemented by an increasing interest in reconsidering the notion of territory. Looking into both geographical and urban design theories, we find examples of a focus on how the networks of the city not only connect them irreversibly...... in theory. The concept of The Polymorphic, Multilayered and Networked Urbanised Territory is introduced to grasp the reality experienced in European regions outside the largest and most potent versions of contemporary cities....

  7. Multilayer modal actuator-based piezoelectric transformers.

    Science.gov (United States)

    Huang, Yao-Tien; Wu, Wen-Jong; Wang, Yen-Chieh; Lee, Chih-Kung

    2007-02-01

    An innovative, multilayer piezoelectric transformer equipped with a full modal filtering input electrode is reported herein. This modal-shaped electrode, based on the orthogonal property of structural vibration modes, is characterized by full modal filtering to ensure that only the desired vibration mode is excited during operation. The newly developed piezoelectric transformer is comprised of three layers: a multilayered input layer, an insulation layer, and a single output layer. The electrode shape of the input layer is derived from its structural vibration modal shape, which takes advantage of the orthogonal property of the vibration modes to achieve a full modal filtering effect. The insulation layer possesses two functions: first, to couple the mechanical vibration energy between the input and output, and second, to provide electrical insulation between the two layers. To meet the two functions, a low temperature, co-fired ceramic (LTCC) was used to provide the high mechanical rigidity and high electrical insulation. It can be shown that this newly developed piezoelectric transformer has the advantage of possessing a more efficient energy transfer and a wider optimal working frequency range when compared to traditional piezoelectric transformers. A multilayer piezoelectric, transformer-based inverter applicable for use in LCD monitors or portable displays is presented as well.

  8. Performance of multilayer coated silicon pore optics

    Science.gov (United States)

    Ackermann, M. D.; Collon, M. J.; Jensen, C. P.; Christensen, F. E.; Krumrey, M.; Cibik, L.; Marggraf, S.; Bavdaz, M.; Lumb, D.; Shortt, B.

    2010-07-01

    The requirements for the IXO (International X-ray Observatory) telescope are very challenging in respect of angular resolution and effective area. Within a clear aperture with 1.7 m > R > 0.25 m that is dictated by the spacecraft envelope, the optics technology must be developed to satisfy simultaneously requirements for effective area of 2.5 m2 at 1.25 keV, 0.65 m2 at 6 keV and 150 cm2 at 30 keV. The reflectivity of the bare mirror substrate materials does not allow these requirements to be met. As such the IXO baseline design contains a coating layout that varies as a function of mirror radius and in accordance with the variation in grazing incidence angle. The higher energy photon response is enhanced through the use of depth-graded multilayer coatings on the inner radii mirror modules. In this paper we report on the first reflectivity measurements of wedged ribbed silicon pore optics mirror plates coated with a depth graded W/Si multilayer. The measurements demonstrate that the deposition and performance of the multilayer coatings is compatible with the SPO production process.

  9. Evolutionary games on multilayer networks: a colloquium

    Science.gov (United States)

    Wang, Zhen; Wang, Lin; Szolnoki, Attila; Perc, Matjaž

    2015-05-01

    Networks form the backbone of many complex systems, ranging from the Internet to human societies. Accordingly, not only is the range of our interactions limited and thus best described and modeled by networks, it is also a fact that the networks that are an integral part of such models are often interdependent or even interconnected. Networks of networks or multilayer networks are therefore a more apt description of social systems. This colloquium is devoted to evolutionary games on multilayer networks, and in particular to the evolution of cooperation as one of the main pillars of modern human societies. We first give an overview of the most significant conceptual differences between single-layer and multilayer networks, and we provide basic definitions and a classification of the most commonly used terms. Subsequently, we review fascinating and counterintuitive evolutionary outcomes that emerge due to different types of interdependencies between otherwise independent populations. The focus is on coupling through the utilities of players, through the flow of information, as well as through the popularity of different strategies on different network layers. The colloquium highlights the importance of pattern formation and collective behavior for the promotion of cooperation under adverse conditions, as well as the synergies between network science and evolutionary game theory.

  10. Inkjet-printed Polyvinyl Alcohol Multilayers.

    Science.gov (United States)

    Salaoru, Iulia; Zhou, Zuoxin; Morris, Peter; Gibbons, Gregory J

    2017-05-11

    Inkjet printing is a modern method for polymer processing, and in this work, we demonstrate that this technology is capable of producing polyvinyl alcohol (PVOH) multilayer structures. A polyvinyl alcohol aqueous solution was formulated. The intrinsic properties of the ink, such as surface tension, viscosity, pH, and time stability, were investigated. The PVOH-based ink was a neutral solution (pH 6.7) with a surface tension of 39.3 mN/m and a viscosity of 7.5 cP. The ink displayed pseudoplastic (non-Newtonian shear thinning) behavior at low shear rates, and overall, it demonstrated good time stability. The wettability of the ink on different substrates was investigated, and glass was identified as the most suitable substrate in this particular case. A proprietary 3D inkjet printer was employed to manufacture polymer multilayer structures. The morphology, surface profile, and thickness uniformity of inkjet-printed multilayers were evaluated via optical microscopy.

  11. Interface roughness in Mo/Si multilayers

    International Nuclear Information System (INIS)

    Nedelcu, I.; Kruijs, R.W.E. van de; Yakshin, A.E.; Tichelaar, F.; Zoethout, E.; Louis, E.; Enkisch, H.; Muellender, S.; Bijkerk, F.

    2006-01-01

    In this work we present a study of surface roughness development at the molybdenum-on-silicon and silicon-on-molybdenum interfaces in Mo/Si multilayers as employed in Extreme UV lithography. Thin Mo/Si multilayers, with layer thicknesses of 3-5 nm, were deposited using electron beam evaporation. The effect of ion treatment on the surface roughness was studied by X-ray reflectometry and transmission electron microscopy. Without ion treatment we observed build up of correlated roughness. The roughness development is shown here to depend strongly on the thickness of the crystalline Mo layer. Independent of the Mo ratio in a period, we show that a minimal amount of ion treatment is required to smoothen the multilayer roughness, which is also confirmed by EUV reflectivity measurements. At high ion energies the layers become smoother due to a larger ion penetration depth. The higher penetration depth is also shown to initiate additional interdiffusion and structural changes at buried interfaces

  12. Polyelectrolyte multilayers: An odyssey through interdisciplinary science

    Science.gov (United States)

    Jaber, Jad A.

    This dissertation provides an overview of a self assembled multilayer technique based on the alternating deposition of oppositely charged polyelectrolytes onto charged solid supports. The basic principles and methodologies governing this technique are laid down, and new strategies are built upon the latter, in an effort to develop innovative technologies that would be beneficial for making new products or improving the quality of existing ones. Fundamental studies to characterize the water content, efficiency of ion-pairing, differential strength of electrostatic interactions, topology, and viscoelastic properties of polyelectrolyte multilayers, PEMUs, are illustrated and conducted. In addition, polyelectrolyte multilayers that are stimulus responsive, or support active and controlled bio-motor protein interactions are described. Attenuated total reflectance Fourier transform infrared, (ATR), spectroscopy was used to compare the extent of swelling and doping within PAH/PSS and PDADMA/PSS polyelectrolyte multilayers. Unlike PDADMA/PSS, whose water content depended on the solution ionic strength, PAH/PSS was resistant to swelling by salt. It was stable up to 4.0 M sodium chloride, with 6 water molecules per ion-pair. Using the infrared active perchlorate sodium salt, the amount of residual persistent extrinsic sites in both PDADMA/PSS and PAH/PSS was determined to be 3% and 6%, respectively. The free energy of association between the polymer segments, in the presence of sodium perchlorate, was in the order of 4.5 kJ mol-1 and -9.5 kJ mol-1 for PDADMA/PSS and PAH/PSS correspondingly. Thus, indicating the relatively strong electrostatic association between the polymer segments in a PAH/PSS relative to PDADMA/PSS multilayer. Adjusting the pH of the solution in contact with the PAH/PSS multilayer to 11.5 resulted in a first order discontinuous dissociation of the Pol+Pol- bonds. Techniques used to study the mechanical properties of single muscle fiber were adapted to

  13. Adhesion toughness of multilayer graphene films.

    Science.gov (United States)

    Wood, Joseph D; Harvey, Christopher M; Wang, Simon

    2017-12-05

    Interface adhesion toughness between multilayer graphene films and substrates is a major concern for their integration into functional devices. Results from the circular blister test, however, display seemingly anomalous behaviour as adhesion toughness depends on number of graphene layers. Here we show that interlayer shearing and sliding near the blister crack tip, caused by the transition from membrane stretching to combined bending, stretching and through-thickness shearing, decreases fracture mode mixity G II /G I , leading to lower adhesion toughness. For silicon oxide substrate and pressure loading, mode mixity decreases from 232% for monolayer films to 130% for multilayer films, causing the adhesion toughness G c to decrease from 0.424 J m -2 to 0.365 J m -2 . The mode I and II adhesion toughnesses are found to be G Ic  = 0.230 J m -2 and G IIc  = 0.666 J m -2 , respectively. With point loading, mode mixity decreases from 741% for monolayer films to 262% for multilayer films, while the adhesion toughness G c decreases from 0.543 J m -2 to 0.438 J m -2 .

  14. Automation Enhancement of Multilayer Laue Lenses

    Energy Technology Data Exchange (ETDEWEB)

    Lauer K. R.; Conley R.

    2010-12-01

    X-ray optics fabrication at Brookhaven National Laboratory has been facilitated by a new, state of the art magnetron sputtering physical deposition system. With its nine magnetron sputtering cathodes and substrate carrier that moves on a linear rail via a UHV brushless linear servo motor, the system is capable of accurately depositing the many thousands of layers necessary for multilayer Laue lenses. I have engineered a versatile and automated control program from scratch for the base system and many subsystems. Its main features include a custom scripting language, a fully customizable graphical user interface, wireless and remote control, and a terminal-based interface. This control system has already been successfully used in the creation of many types of x-ray optics, including several thousand layer multilayer Laue lenses.Before reaching the point at which a deposition can be run, stencil-like masks for the sputtering cathodes must be created to ensure the proper distribution of sputtered atoms. Quality of multilayer Laue lenses can also be difficult to measure, given the size of the thin film layers. I employ my knowledge of software and algorithms to further ease these previously painstaking processes with custom programs. Additionally, I will give an overview of an x-ray optic simulator package I helped develop during the summer of 2010. In the interest of keeping my software free and open, I have worked mostly with the multiplatform Python and the PyQt application framework, utilizing C and C++ where necessary.

  15. Influence of airborne pollen counts and length of pollen season of selected allergenic plants on the concentration of sIgE antibodies on the population of Bratislava, Slovakia

    Directory of Open Access Journals (Sweden)

    Jana Ščevková

    2015-09-01

    Full Text Available Introduction and objective. The association between airborne pollen counts or duration of pollen season and allergy symptoms is not always distinguished. The purpose of this study was to examine the correlation between pollen exposure (annual total pollen quantity and main pollen season length of selected allergenic plants in the atmosphere of Bratislava, and concentration of allergen-specific immunoglobulin E (sIgE in serum of patients with seasonal allergy during 2002–2003. Materials and methods. The concentration of pollen was monitored by a Burkard volumetric pollen trap. At the same time, 198 pollen allergic patients were testing to determine the values of sIgE antibodies against selected pollen allergens; a panel of 8 purified allergens was used. Results. The highest percentages of sensitization were detected for Poaceae and [i]Ambrosia[/i] pollen allergens. The most abundant airborne pollen types were Urticaceae, [i]Betula[/i], [i]Populus[/i], Fraxinus, Pinus and Poaceae. The length of the pollen season varied. The longest pollen season was that of the [i]Plantago[/i] – 105 days, and the shortest, [i]Corylus[/i] – 20 days. A significant correlation was found between annual total pollen quantity and median sIgE values, especially in 2002. Conclusions. A strong and significant positive correlation was observed between pollen counts, excluding [i]Betula[/i], and sIgE levels in both analysed years. The correlation was weaker and negative in the case of length of pollen season and sIgE values.

  16. Mechanical properties of highly textured Cu/Ni multilayers

    International Nuclear Information System (INIS)

    Liu, Y.; Bufford, D.; Wang, H.; Sun, C.; Zhang, X.

    2011-01-01

    We report on the synthesis of highly (1 1 1) and (1 0 0) textured Cu/Ni multilayers with individual layer thicknesses, h, varying from 1 to 200 nm. When, h, decreases to 5 nm or less, X-ray diffraction spectra show epitaxial growth of Cu/Ni multilayers. High resolution transmission electron microscopy studies show the coexistence of nanotwins and coherent layer interfaces in highly (1 1 1) textured Cu/Ni multilayers with smaller h. Hardnesses of multilayer films increase with decreasing h, approach a maximum at h of a few nanometers, and show softening thereafter at smaller h. The influence of layer interfaces as well as twin interfaces on strengthening mechanisms of multilayers and the formation of twins in Ni in multilayers are discussed.

  17. Beam conditioning multilayer optics for laboratory x-ray sources

    Science.gov (United States)

    Platonov, Yuriy; Verman, Boris; Jiang, Licai; Kim, Bonglea

    2015-08-01

    Practically, all modern x-ray diffractometers, SAXS, TXRF systems and many other laboratory X-ray instruments are equipped with multilayer X-ray optics. It is due to a much higher flux these instruments have comparing with those having no optics or having a grazing incidence optics without multilayer coatings. There are variety of the multilayer optics designs - from one bounce collimating parabolic mirror to four corners double bounce focusing mirrors. Design of multilayer optics depends on application, X-ray source parameters, requirements on divergence, focal spot, available room for the optics, manufacturing capability and cost. Key characteristics of the optics, requirements on multilayers d-spacing accuracy, optics slope errors, and substrates surface roughness are discussed in the paper. Different optics designs are considered including recently developed optics for a laboratory topography system and a Hybrid optics combining multilayer and crystal optics for XRR and XRD.

  18. Npn double heterostructure bipolar transistor with ingaasn base region

    Science.gov (United States)

    Chang, Ping-Chih; Baca, Albert G.; Li, Nein-Yi; Hou, Hong Q.; Ashby, Carol I. H.

    2004-07-20

    An NPN double heterostructure bipolar transistor (DHBT) is disclosed with a base region comprising a layer of p-type-doped indium gallium arsenide nitride (InGaAsN) sandwiched between n-type-doped collector and emitter regions. The use of InGaAsN for the base region lowers the transistor turn-on voltage, V.sub.on, thereby reducing power dissipation within the device. The NPN transistor, which has applications for forming low-power electronic circuitry, is formed on a gallium arsenide (GaAs) substrate and can be fabricated at commercial GaAs foundries. Methods for fabricating the NPN transistor are also disclosed.

  19. Upper critical field of Mo-Ni heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Uher, C.; Watson, W.J.; Cohn, J.L.; Schuller, I.K.

    1985-12-01

    Upper critical field and its anisotropy have been measured on two very short wavelength Mo-Ni heterostructures of different degrees of perfection, lambda = 13.8A (disordered structure) and lambda = 16.6A (layered structure). In both cases the parallel critical field has an unexpected temperature dependence, a large and temperature dependent anisotropy, and over 60% enhancement over the Clogston-Chandrasekhar limit. Data are fit to the Werthamer-Helfand-Hohenberg theory and the spin-orbit scattering times are found to be 1.79 x 10 T s and 2 x 10 T s, respectively.

  20. Upper critical field of Mo-Ni heterostructures

    International Nuclear Information System (INIS)

    Uher, C.; Watson, W.J.; Cohn, J.L.; Schuller, I.K.

    1985-12-01

    Upper critical field and its anisotropy have been measured on two very short wavelength Mo-Ni heterostructures of different degrees of perfection, lambda = 13.8A (disordered structure) and lambda = 16.6A (layered structure). In both cases the parallel critical field has an unexpected temperature dependence, a large and temperature dependent anisotropy, and over 60% enhancement over the Clogston-Chandrasekhar limit. Data are fit to the Werthamer-Helfand-Hohenberg theory and the spin-orbit scattering times are found to be 1.79 x 10 -13 s and 2 x 10 -13 s, respectively

  1. Reactive Functionalized Multilayer Polymers in Coextrusion Process

    Science.gov (United States)

    Lamnawar, Khalid; Maazouz, Abderrahim

    2007-04-01

    Coextrusion technologies are commonly used to produce multilayered composite sheets or films with a large range of applications. The contrast of rheological properties between layers can lead to interfacial instabilities during flow. Important theoretical and experimental advances have been made during the last decades on the stability of compatible and incompatible polymers using a mechanical approach. The present study deals with the influence of this affinity on interfacial instabilities for functionalized incompatible polymers between the neighboring layers. Polyamide (PA6)/Polyethylene-grafted (GMA) or pure PE were studied with different viscosity and elasticity ratios. We have experimentally confirmed, in this case, that the weak disturbance can be predicted by considering an interphase of non-zero thickness (corresponding to interdiffusion/reaction zone) instead of a purely geometrical interface between the two reactive layers. As a first step, rheological behavior of multilayer coextruded cast films was investigated to probe: (i) the competition between polymer/polymer interdiffusion and the interfacial reaction and (ii) the influence of the interphase. The contribution of this one effect has been studied along with the increase of the number of layers. The results show that the variation in dynamic modulus of the multilayer system reflects both diffusion and chemical reaction. Finally, and in order to quantify the contribution of the effect of the interface/interphase with a specific interfacial area, an expression was developed to take into account the interphase triggered between the neighboring layers and allowed us to estimate its thickness at a specific welding time and shear rate. As the second step, we formulate an experimental strategy to optimize the process by listing the different parameters controlling the stability of the reactive multilayer flows. The plastic films of two, three and five layers were coextruded in symmetrical and asymmetrical

  2. The dielectric genome of van der Waals heterostructures

    DEFF Research Database (Denmark)

    Andersen, Kirsten; Latini, Simone; Thygesen, Kristian Sommer

    2015-01-01

    with ab-initio accuracy using a multi-scale approach where the dielectric functions of the individual layers (the dielectric building blocks) are coupled simply via their long-range Coulomb interaction. We use the method to illustrate the 2D- 3D dielectric transition in multi-layer MoS2 crystals...

  3. Neutron diffraction studies of thin film multilayer structures

    Energy Technology Data Exchange (ETDEWEB)

    Majkrzak, C.F.

    1985-01-01

    The application of neutron diffraction methods to the study of the microscopic chemical and magnetic structures of thin film multilayers is reviewed. Multilayer diffraction phenomena are described in general and in particular for the case in which one of the materials of a bilayer is ferromagnetic and the neutron beam polarized. Recent neutron diffraction measurements performed on some interesting multilayer systems are discussed. 70 refs., 5 figs.

  4. Neutron diffraction studies of thin film multilayer structures

    International Nuclear Information System (INIS)

    Majkrzak, C.F.

    1985-01-01

    The application of neutron diffraction methods to the study of the microscopic chemical and magnetic structures of thin film multilayers is reviewed. Multilayer diffraction phenomena are described in general and in particular for the case in which one of the materials of a bilayer is ferromagnetic and the neutron beam polarized. Recent neutron diffraction measurements performed on some interesting multilayer systems are discussed. 70 refs., 5 figs

  5. Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

    Science.gov (United States)

    Timofeev, V. A.; Nikiforov, A. I.; Tuktamyshev, A. R.; Mashanov, V. I.; Loshkarev, I. D.; Bloshkin, A. A.; Gutakovskii, A. K.

    2018-04-01

    The GeSiSn, SiSn layer growth mechanisms on Si(100) were investigated and the kinetic diagrams of the morphological GeSiSn, SiSn film states in the temperature range of 150 °C-450 °C at the tin content from 0% to 35% were built. The phase diagram of the superstructural change on the surface of Sn grown on Si(100) in the annealing temperature range of 0 °C-850 °C was established. The specular beam oscillations were first obtained during the SiSn film growth from 150 °C to 300 °C at the Sn content up to 35%. The transmission electron microscopy and x-ray diffractometry data confirm the crystal perfection and the pseudomorphic GeSiSn, SiSn film state, and also the presence of smooth heterointerfaces between GeSiSn or SiSn and Si. The photoluminescence for the multilayer periodic GeSiSn/Si structures in the range of 0.6-0.8 eV was detected. The blue shift with the excitation power increase is observed suggesting the presence of a type II heterostructure. The creation of tensile strained Ge films, which are pseudomorphic to the underlying GeSn layer, is confirmed by the results of the formation and analysis of the reciprocal space map in the x-ray diffractometry. The tensile strain in the Ge films reached the value in the range of 0.86%-1.5%. The GeSn buffer layer growth in the Sn content range from 8% to 12% was studied. The band structure of heterosystems based on pseudomorphic GeSiSn, SiSn and Ge layers was calculated and the valence and conduction band subband position dependences on the Sn content were built. Based on the calculation, the Sn content range in the GeSiSn, SiSn, and GeSn layers, which corresponds to the direct bandgap GeSiSn, SiSn, and Ge material, was obtained.

  6. Hole generation associated with intrinsic defects in SOI-based SiGe thin films formed by solid-source molecular beam epitaxy

    Science.gov (United States)

    Satoh, Motoki; Arimoto, Keisuke; Yamanaka, Junji; Sawano, Kentarou; Shiraki, Yasuhiro; Nakagawa, Kiyokazu

    2018-04-01

    The electronic properties of SiGe on insulator (SGOI) structure are under intense investigation due to its importance as an electronic material. In the previous investigations, a p-type conduction was observed in SGOI even in the absence of extrinsic chemical acceptors, which is a serious problem for device applications. In this paper, the electrical properties of intrinsic-defect-related acceptor states generated during the SGOI formation are reported. It is found that freeze-out is hard to be achieved even at temperatures below 10 K, which indicates that the Fermi level lies near the valence band at low temperatures. With an aim to annihilate these defects, thermal annealing at 1050 °C for 12 h in N2 ambient was carried out. It was found that the thermal treatment is effective in reducing the densities of the acceptor states and in improving the crystalline quality.

  7. Characterization of electrical properties in axial Si-Ge nanowire heterojunctions using off-axis electron holography and atom-probe tomography

    Energy Technology Data Exchange (ETDEWEB)

    Gan, Zhaofeng [Department of Physics, Arizona State University, Tempe, Arizona 85287, USA; Perea, Daniel E. [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352, USA; Yoo, Jinkyoung [Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA; He, Yang [Department of Mechanical Engineering and Materials Science, University of Pittsburgh, Pennsylvania 15261, USA; Colby, Robert J. [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352, USA; Barker, Josh E. [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352, USA; Gu, Meng [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352, USA; Mao, Scott X. [Department of Mechanical Engineering and Materials Science, University of Pittsburgh, Pennsylvania 15261, USA; Wang, Chongmin [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352, USA; Picraux, S. T. [Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA; Smith, David J. [Department of Physics, Arizona State University, Tempe, Arizona 85287, USA; McCartney, Martha R. [Department of Physics, Arizona State University, Tempe, Arizona 85287, USA

    2016-09-13

    Doped Si-Ge nanowire (NW) heterojunctions were grown using the vapor-liquid-solid method with AuGa and Au catalyst particles. Transmission electron microscopy and off-axis electron holography (EH) were used to characterize the nanostructure and to measure the electrostatic potential profile across the junction resulting from electrically active dopants, while atom-probe tomography (APT) was used to determine the Si, Ge and total (active and inactive) dopant concentration profiles. A comparison of the measured potential profile with simulations indicated that Ga dopants unintentionally introduced during AuGa catalyst growth were electronically inactive despite APT results that showed considerable amounts of Ga in the Si region. 10% P in Ge and 100% B in Si were estimated to be activated, which was corroborated by in situ electron-holography biasing experiments. This combination of EH, APT, in situ biasing and simulations allows a better knowledge and understanding of the electrically active dopant distributions in NWs.

  8. Impact of Breakdown Voltage on Gamma Irradiation Effects in 0.13- mu text{m} and 0.25- mu text{m} SiGe HBTs

    Science.gov (United States)

    Schmidt, Jens; Korn, Julian; Fischer, Gerhard G.; Sorge, Roland

    2017-04-01

    We have investigated the ionization damage by 60Co gamma irradiation in 0.13- and 0.25-μm SiGe heterojunction bipolar transistors (HBTs). Both technologies feature high-speed HBTs (HS-HBTs) together with high-voltage HBTs (HV-HBTs). Base current degradation with increasing total irradiation dose is studied. An identical behavior of corresponding HS-HBT and HV-HBT is found for operation in forward mode probing the emitter-base junction. In reverse mode where the collector base junction is determining the base current degradation, HV devices exhibit larger degradation than their HS counterparts. The increased width of the collector-base space charge region in HV devices leads to enhanced interface recombination at the adjacent Si/oxide interfaces and stronger base current degradation. TCAD simulations of device degradation suggest a linear relationship between total irradiation dose and radiation-induced interface state density Nit.

  9. Nanoscale heterostructures with molecular-scale single-crystal metal wires.

    Science.gov (United States)

    Kundu, Paromita; Halder, Aditi; Viswanath, B; Kundu, Dipan; Ramanath, Ganpati; Ravishankar, N

    2010-01-13

    Creating nanoscale heterostructures with molecular-scale (synthesis of nanoscale heterostructures with single-crystal molecular-scale Au nanowires attached to different nanostructure substrates. Our method involves the formation of Au nanoparticle seeds by the reduction of rocksalt AuCl nanocubes heterogeneously nucleated on the substrates and subsequent nanowire growth by oriented attachment of Au nanoparticles from the solution phase. Nanoscale heterostructures fabricated by such site-specific nucleation and growth are attractive for many applications including nanoelectronic device wiring, catalysis, and sensing.

  10. Optical resonant tunneling in photonic heterostructures containing a tunable dielectric layer

    Science.gov (United States)

    Cui, Liyong; Lu, Guang; Zhang, Shan; Liu, Fen; Xin, Yanqing; Wang, Kunlun; Yang, Tianlin; Wang, Li; Du, Guiqiang

    2017-10-01

    We demonstrate theoretically and experimentally that complete light transmission can be realized using a photonic heterostructure containing a tunable dielectric layer inserted between two different truncated photonic crystals (PCs). A perfect tunneling state is produced within enlarged photonic band gap (PBG) of the heterostructure by varying the thickness of inserted dielectric layer and the transmittance of the tunneling state depends on the dielectric layer thickness. Additionally, the tunneling state frequency varies with inserted layer thickness but is always located within the small overlapped PBG of two PCs. Therefore, both a perfect tunneling state and an ultrawide PBG can be realized in these heterostructures. The experimental results showed good agreement with theoretical values.

  11. Resistance switching of the interfacial conductance in amorphous SrTiO3 heterostructures

    DEFF Research Database (Denmark)

    Christensen, Dennis; Trier, Felix; Chen, Yunzhong

    Complex oxides have attracted a lot of interest recently as this class of material exhibits a plethora of remarkable properties. In particular, a great variety of properties is observed in the heterostructure composed of lanthanum aluminate (LaAlO3) and strontium titanate (SrTiO3). For instance...... by an electric field. It has previously been demonstrated that SrTiO3 heterostructures with amorphous LaAlO3 top layers can display interfacial conductivity with similar critical thickness dependence. Here, we report resistance switching of the interfacial conductance for SrTiO3 heterostructures with amorphous...

  12. Interlayer coupling effects on Schottky barrier in the arsenene-graphene van der Waals heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Xia, Congxin, E-mail: xiacongxin@htu.edu.cn; Xue, Bin; Wang, Tianxing; Peng, Yuting [Department of Physic, Henan Normal University, Xinxiang 453007 (China); Jia, Yu [School of Physics and Engineering, Zhengzhou University, Zhengzhou 450052 (China)

    2015-11-09

    The electronic characteristics of arsenene-graphene van der Waals (vdW) heterostructures are studied by using first-principles methods. The results show that a linear Dirac-like dispersion relation around the Fermi level can be quite well preserved in the vdW heterostructures. Moreover, the p-type Schottky barrier (0.18 eV) to n-type Schottky barrier (0.31 eV) transition occurs when the interlayer distance increases from 2.8 to 4.5 Å, which indicates that the Schottky barrier can be tuned effectively by the interlayer distance in the vdW heterostructures.

  13. Heterostructures manufactured by annealing of InSe monocrystals in sulfur vapor

    Directory of Open Access Journals (Sweden)

    Kovalyuk Z. D.

    2009-02-01

    Full Text Available InS/InSe heterostructures were created by a long-term (during 120 h thermal processing of InSe monocrystals in sulfur vapor. Investigations of electrical and photoelectric properties of structures manufactured by this method showed essential advantage of the anysotype heterostructure n-InS/p-InSe in comparison with its isotype analog. A comparison of the spectral properties of n-InS/p-InSe heterostructures obtained at different times of annealing were performed. The quantities of interband transitions and parameters of the unit lattice cell were determined defined for the InS film.

  14. Heterostructured electrode with concentration gradient shell for highly efficient oxygen reduction at low temperature

    OpenAIRE

    Zhou, Wei; Liang, Fengli; Shao, Zongping; Chen, Jiuling; Zhu, Zhonghua

    2011-01-01

    Heterostructures of oxides have been widely investigated in optical, catalytic and electrochemical applications, because the heterostructured interfaces exhibit pronouncedly different transport, charge, and reactivity characteristics compared to the bulk of the oxides. Here we fabricated a three-dimensional (3D) heterostructured electrode with a concentration gradient shell. The concentration gradient shell with the composition of Ba0.5-xSr0.5-yCo0.8Fe0.2O3-? (BSCF-D) was prepared by simply t...

  15. Semiconductor-oxide heterostructured nanowires using postgrowth oxidation.

    Science.gov (United States)

    Wallentin, Jesper; Ek, Martin; Vainorious, Neimantas; Mergenthaler, Kilian; Samuelson, Lars; Pistol, Mats-Erik; Reine Wallenberg, L; Borgström, Magnus T

    2013-01-01

    Semiconductor-oxide heterointerfaces have several electron volts high-charge carrier potential barriers, which may enable devices utilizing quantum confinement at room temperature. While a single heterointerface is easily formed by oxide deposition on a crystalline semiconductor, as in MOS transistors, the amorphous structure of most oxides inhibits epitaxy of a second semiconductor layer. Here, we overcome this limitation by separating epitaxy from oxidation, using postgrowth oxidation of AlP segments to create axial and core-shell semiconductor-oxide heterostructured nanowires. Complete epitaxial AlP-InP nanowire structures were first grown in an oxygen-free environment. Subsequent exposure to air converted the AlP segments into amorphous aluminum oxide segments, leaving isolated InP segments in an oxide matrix. InP quantum dots formed on the nanowire sidewalls exhibit room temperature photoluminescence with small line widths (down to 15 meV) and high intensity. This optical performance, together with the control of heterostructure segment length, diameter, and position, opens up for optoelectrical applications at room temperature.

  16. Epitaxial Heterostructures of Lead Selenide Quantum Dots on Hematite Nanowires.

    Science.gov (United States)

    Selinsky, Rachel S; Shin, Sanghun; Lukowski, Mark A; Jin, Song

    2012-06-21

    We present a novel method for synthesizing epitaxial quantum dot-nanowire (QD-NW) heterostructures using the example of colloidal PbSe QDs decorated on furnace-grown hematite (α-Fe2O3) NWs. The direct heterogeneous nucleation of QDs on Fe2O3 NWs relies upon an aggressive surface dehydration of the as-synthesized Fe2O3 NWs at 350 °C under vacuum and subsequent introduction of colloidal reactants resulting in direct growth of PbSe QDs on Fe2O3. The synthesis is tunable: the QD diameter distribution and density of QDs on the NWs increase with increased dehydration time, and QD diameters and size distributions decrease with decreased injection temperature of the colloidal synthesis. Transmission electron microscopy (TEM) structural analysis reveals direct heteroepitaxial heterojunctions where the matching faces can be PbSe (002) and Fe2O3 (003) with their respective [11̅0] crystallographic directions aligned. This can be a general approach for integrating colloidal and furnace synthetic techniques, thus broadening possible material combinations for future high-quality, epitaxial nanoscale heterostructures for solar applications.

  17. Supported plasma-made 1D heterostructures: perspectives and applications

    Energy Technology Data Exchange (ETDEWEB)

    Borras, Ana; Macias-Montero, Manuel; Romero-Gomez, Pablo; Gonzalez-Elipe, Agustin R, E-mail: anaisabel.borras@icmse.csic.es [Materials Science Institute of Seville (CSIC-Universidad Sevilla), C/Americo Vespucio 49 41092, Sevilla (Spain)

    2011-05-04

    Plasma-related methods have been widely used in the fabrication of carbon nanotubes and nanofibres (NFs) and semiconducting inorganic nanowires (NWs). A natural progression of the research in the field of 1D nanostructures is the synthesis of multicomponent NWs and NFs. In this paper we review the state of the art of the fabrication by plasma methods of 1D heterostructures including applications and perspectives. Furthermore, recent developments on the use of metal seeds (Ag, Au, Pt) to obtain metal-oxide nanostructures are also extensively described. Results are shown for various metal substrates, either metal foils or supported nanoparticles/thin films of the metal where the effects of the size, surface coverage, percolation degree and thickness of the metal seeds have been systematically evaluated. The possibilities of the process are illustrated by the preparation of nanostructured films and supported NFs of different metal-oxides (Ag, Au and SiO{sub 2}, TiO{sub 2}, ZnO). Particularly, in the case of silver, the application of an oxygen plasma treatment prior to the deposition of the oxide was critical for efficiently controlling the growth of the 1D heterostructures. A phenomenological model is proposed to account for the thin-film nanostructuring and fibre formation by considering basic phenomena such as stress relaxation, inhomogeneities in the plasma sheath electrical field and the local disturbance of the oxide growth.

  18. Magnetotransport in heterostructures of transition metal dichalcogenides and graphene

    Science.gov (United States)

    Völkl, Tobias; Rockinger, Tobias; Drienovsky, Martin; Watanabe, Kenji; Taniguchi, Takashi; Weiss, Dieter; Eroms, Jonathan

    2017-09-01

    We use a van der Waals pickup technique to fabricate different heterostructures containing WSe2(WS2) and graphene. The heterostructures were structured by plasma etching, contacted by one-dimensional edge contacts, and a top gate was deposited. For graphene /WSe2/SiO2 samples we observe mobilities of ˜12 000 cm2V-1s-1 . Magnetic-field-dependent resistance measurements on these samples show a peak in the conductivity at low magnetic fields. This dip is attributed to the weak antilocalization (WAL) effect, stemming from spin-orbit coupling. Samples where graphene is encapsulated between WSe2(WS2) and hexagonal boron nitride show a much higher mobility of up to ˜120 000 cm2V-1s-1 . However, in these samples no WAL peak can be observed. We attribute this to a transition from the diffusive to the quasiballistic regime. At low magnetic fields a resistance peak appears, which we ascribe to a size effect due to boundary scattering. Shubnikov-de Haas oscillations in fully encapsulated samples show all integer filling factors due to complete lifting of the spin and valley degeneracies.

  19. Integration of Multi-Functional Oxide Thin Film Heterostructures with III-V Semiconductors

    Science.gov (United States)

    Rahman, Md. Shafiqur

    Integration of multi-functional oxide thin films with semiconductors has attracted considerable attention in recent years due to their potential applications in sensing and logic functionalities that can be incorporated in future system-on-a-chip devices. III-V semiconductor, for example, GaAs, have higher saturated electron velocity and mobility allowing transistors based on GaAs to operate at a much higher frequency with less noise compared to Si. In addition, because of its direct bandgap a number of efficient optical devices are possible and by oxide integrating with other III-V semiconductors the wavelengths can be made tunable through hetero-engineering of the bandgap. This study, based on the use of SrTiO3 (STO) films grown on GaAs (001) substrates by molecular beam epitaxy (MBE) as an intermediate buffer layer for the hetero-epitaxial growth of ferromagnetic La0.7Sr 0.3MnO3 (LSMO) and room temperature multiferroic BiFeO 3 (BFO) thin films and superlattice structures using pulsed laser deposition (PLD). The properties of the multilayer thin films in terms of growth modes, lattice spacing/strain, interface structures and texture were characterized by the in-situ reflection high energy electron diffraction (RHEED). The crystalline quality and chemical composition of the complex oxide heterostructures were investigated by a combination of X-ray diffraction (XRD) and X-ray photoelectron absorption spectroscopy (XPS). Surface morphology, piezo-response with domain structure, and ferroelectric switching observations were carried out on the thin film samples using a scanning probe microscope operated as a piezoresponse force microscopy (PFM) in the contact mode. The magnetization measurements with field cooling exhibit a surprising increment in magnetic moment with enhanced magnetic hysteresis squareness. This is the effect of exchange interaction between the antiferromagnetic BFO and the ferromagnetic LSMO at the interface. The integration of BFO materials with

  20. A multilayer approach for turbidity currents

    Science.gov (United States)

    Fernandez-Nieto, Enrique; Castro Díaz, Manuel J.; Morales de Luna, Tomás

    2017-04-01

    When a river that carries sediment in suspension enters into a lake or the ocean it can form a plume that can be classified as hyperpycnal or hypopycnal. Hypopycnal plumes occurs if the combined density of the sediment and interstitial fluid is lower than that of the ambient. Hyperpycnal plumes are a class of sediment-laden gravity current commonly referred to as turbidity currents [7,9]. Some layer-averaged models have been previously developed (see [3, 4, 8] among others). Although this layer-averaged approach gives a fast and valuable information, it has the disadvantage that the vertical distribution of the sediment in suspension is lost. A recent technique based on a multilayer approach [1, 2, 6] has shown to be specially useful to generalize shallow water type models in order to keep track of the vertical components of the averaged variables in the classical shallow water equations. In [5] multilayer model is obtained using a vertical discontinuous Galerkin approach for which the vertical velocity is supposed to be piecewise linear and the horizontal velocity is supposed to be piecewise constant. In this work the technique introduced in [5] is generalized to derive a model for turbidity currents. This model allows to simulate hyperpycnal as well as hypopycnal plumes. Several numerical tests will be presented. References [1] E. Audusse, M. Bristeau, B. Perthame, and J. Sainte-Marie. A multilayer Saint-Venant system with mass exchanges for shallow water flows. derivation and numerical validation. ESAIM: Mathematical Modelling and Numerical Analysis, 45(1):169-200, (2010). [2] E. Audusse, M.-O. Bristeau, M. Pelanti, and J. Sainte-Marie. Approximation of the hydrostatic Navier–Stokes system for density stratified flows by a multilayer model: Kinetic interpretation and numerical solution. Journal of Computational Physics, 230(9):3453-3478, (2011). [3] S. F. Bradford and N. D. Katopodes. Hydrodynamics of turbid underflows. i: Formulation and numerical

  1. Multilayer detector for skin absorbed dose measuring

    International Nuclear Information System (INIS)

    Osanov, D.P.; Panova, V.P.; Shaks, A.I.

    1985-01-01

    A method for skin dosimetry based on utilization of multilayer detectors and permitting to estimate distribution of absorbed dose by skin depth is described. The detector represents a set of thin sensitive elements separated by tissue-equivalent absorbers. Quantitative evaluation and forecasting the degree of radiation injury of skin are determined by the formula based on determination of the probability of the fact that cells are not destroyed and they can divide further on. The given method ensures a possibility of quantitative evaluation of radiobiological effect and forecasting clinical consequences of skin irradiation by results of corresponding measurements of dose by means of the miultilayer detector

  2. Digital biomagnetism: Electrodeposited multilayer magnetic barcodes

    Energy Technology Data Exchange (ETDEWEB)

    Palfreyman, Justin J. [Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, CB3 0HE (United Kingdom)], E-mail: jjp38@cam.ac.uk; Cooper, Joshaniel F.K.; Belle, Frieda van; Hong Bingyan; Hayward, Tom J. [Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, CB3 0HE (United Kingdom); Lopalco, Maria; Bradley, Mark [School of Chemistry, University of Edinburgh, King' s Buildings, Edinburgh, EH9 3JJ (United Kingdom); Mitrelias, Thanos; Bland, J. Anthony C. [Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, CB3 0HE (United Kingdom)

    2009-05-15

    A novel magnetic encoding technique for performing high-throughput biological assays is presented. Electrodeposited Ni/Cu and Co/Cu multilayer pillar structures with a diameter of 15 {mu}m and a thickness up to 10 {mu}m are presented as 'magnetic barcodes', where the number of unique codes possible increases exponentially with a linear increase in length. A gold cap facilitates the growth of self-assembled monolayers (SAMs), while microdrop printing allows efficient generation of large libraries of tagged probes. Coercivity-tuning techniques are used to exploit a non-proximity encoding methodology compatible with microfluidic flow.

  3. Effective Interactions between Multilayered Ionic Microgels

    Directory of Open Access Journals (Sweden)

    Clemens Hanel

    2014-12-01

    Full Text Available Using a one-component reduction formalism, we calculate the effective interactions and the counterion density profiles for microgels that feature a multilayered shell structure. We follow a strategy that involves second order perturbation theory and obtain analytical expressions for the effective interactions by modeling the layers of the particles as linear superpostion of homogeneously charged spheres. The general method is applied to the important case of core–shell microgels and compared with the well-known results for a microgel that can be approximated by a macroscopic, and homogeneously charged, spherical macroion.

  4. Magnetic anisotropy of Ni/Cr multilayers

    International Nuclear Information System (INIS)

    Kang, S.; Xia, H.

    1997-01-01

    The magnetic anisotropy of Ni/Cr multilayers has been investigated by using vibrating sample magnetometer (VSM) and ferromagnetic resonance techniques (FMR). The FMR spectra are obtained as a function of the orientation of the applied magnetic field from in-plane to out-of-plane. The results are fitted theoretically to determine the magnetic anisotropy. From VSM and FMR, a positive value for Ni/Cr interface anisotropy is obtained, which favours a perpendicular easy axis. The possible mechanism for the perpendicular anisotropy has been discussed and it may be attributed to the magnetostriction, caused by intrinsic stress due to lattice mismatch. (orig.). With 005 figs., 001 tabs

  5. Multilayer Perceptron: Architecture Optimization and Training

    Directory of Open Access Journals (Sweden)

    Hassan Ramchoun

    2016-09-01

    Full Text Available The multilayer perceptron has a large wide of classification and regression applications in many fields: pattern recognition, voice and classification problems. But the architecture choice has a great impact on the convergence of these networks. In the present paper we introduce a new approach to optimize the network architecture, for solving the obtained model we use the genetic algorithm and we train the network with a back-propagation algorithm. The numerical results assess the effectiveness of the theoretical results shown in this paper, and the advantages of the new modeling compared to the previous model in the literature.

  6. Engineering aspects of multilayer piezoceramic actuators

    Science.gov (United States)

    Golovnin, V. A.; Kaplunov, I. A.; Ivanova, A. I.; Grechishkin, R. M.

    2013-12-01

    With the increasing demand for multilayer ceramic chip components a full understanding of the co-firing of ceramics with metal electrodes becomes important. In the present work the processing of a piezoelectric monolithic actuator by stacking and cofiring Ag-Pd electroded tape cast layers was studied. The inter-diffusion and microstructure of the co-fired interface of PZT ferroelectrics and Ag-Pd metal electrode were examined by scanning electron microscopy (SEM) and energy-dispersive microanalysis. No strong structural distortions and interdiffusion were observed at the co-fired ceramic-electrode interface.

  7. Optics and multilayer coatings for EUVL systems

    Energy Technology Data Exchange (ETDEWEB)

    Soufli, R; Bajt, S; Hudyma, R M; Taylor, J S

    2008-03-21

    EUV lithography (EUVL) employs illumination wavelengths around 13.5 nm, and in many aspects it is considered an extension of optical lithography, which is used for the high-volume manufacturing (HVM) of today's microprocessors. The EUV wavelength of illumination dictates the use of reflective optical elements (mirrors) as opposed to the refractive lenses used in conventional lithographic systems. Thus, EUVL tools are based on all-reflective concepts: they use multilayer (ML) coated optics for their illumination and projection systems, and they have a ML-coated reflective mask.

  8. Multi-layer coated nuclear fuel particles

    International Nuclear Information System (INIS)

    Suzuki, Nobuyuki.

    1984-01-01

    Purpose: To obtain coated fuel particles with low breaking rate. Constitution: In a multi-layer coated nuclear fuel particles having a silicon carbide coating layer as the layer for confining solid fission products, a silicon carbide layer with a density lower than that of the above-mentioned silicon carbide layer is disposed to the inside and/or outside of the later layer. The density is set to less than 3.18 g/cm 2 . Disposition of the lower density silicon carbide layer can moderate the tensile stresses or compression forces exerted to the high density silicon carbide layer thereby enabling to decrease the possibility of failure. (Kamimura, M.)

  9. Magnetic pinning in superconductor-ferromagnet multilayers

    International Nuclear Information System (INIS)

    Bulaevskii, L. N.; Chudnovsky, E. M.; Maley, M. P.

    2000-01-01

    We argue that superconductor/ferromagnet multilayers of nanoscale period should exhibit strong pinning of vortices by the magnetic domain structure in magnetic fields below the coercive field when ferromagnetic layers exhibit strong perpendicular magnetic anisotropy. The estimated maximum magnetic pinning energy for single vortex in such a system is about 100 times larger than the pinning energy by columnar defects. This pinning energy may provide critical currents as high as 10 6 -10 7 A/cm 2 at high temperatures (but not very close to T c ) at least in magnetic fields below 0.1 T. (c) 2000 American Institute of Physics

  10. Magnetic pinning in superconductor-ferromagnet multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Bulaevskii, L. N. [Department of Physics and Astronomy, CUNY Lehman College 250 Bedford Park Boulevard West, Bronx, New York 10468-1589 (United States); Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Chudnovsky, E. M. [Department of Physics and Astronomy, CUNY Lehman College, 250 Bedford Park Boulevard West, Bronx, New York 10468-1589 (United States); Maley, M. P. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    2000-05-01

    We argue that superconductor/ferromagnet multilayers of nanoscale period should exhibit strong pinning of vortices by the magnetic domain structure in magnetic fields below the coercive field when ferromagnetic layers exhibit strong perpendicular magnetic anisotropy. The estimated maximum magnetic pinning energy for single vortex in such a system is about 100 times larger than the pinning energy by columnar defects. This pinning energy may provide critical currents as high as 10{sup 6}-10{sup 7} A/cm{sup 2} at high temperatures (but not very close to T{sub c}) at least in magnetic fields below 0.1 T. (c) 2000 American Institute of Physics.

  11. Optimization of Perfect Absorbers with Multilayer Structures

    Science.gov (United States)

    Li Voti, Roberto

    2018-02-01

    We study wide-angle and broadband perfect absorbers with compact multilayer structures made of a sequence of ITO and TiN layers deposited onto a silver thick layer. An optimization procedure is introduced for searching the optimal thicknesses of the layers so as to design a perfect broadband absorber from 400 nm to 750 nm, for a wide range of angles of incidence from 0{°} to 50{°}, for both polarizations and with a low emissivity in the mid-infrared. We eventually compare the performances of several optimal structures that can be very promising for solar thermal energy harvesting and collectors.

  12. Identifying key nodes in multilayer networks based on tensor decomposition

    Science.gov (United States)

    Wang, Dingjie; Wang, Haitao; Zou, Xiufen

    2017-06-01

    The identification of essential agents in multilayer networks characterized by different types of interactions is a crucial and challenging topic, one that is essential for understanding the topological structure and dynamic processes of multilayer networks. In this paper, we use the fourth-order tensor to represent multilayer networks and propose a novel method to identify essential nodes based on CANDECOMP/PARAFAC (CP) tensor decomposition, referred to as the EDCPTD centrality. This method is based on the perspective of multilayer networked structures, which integrate the information of edges among nodes and links between different layers to quantify the importance of nodes in multilayer networks. Three real-world multilayer biological networks are used to evaluate the performance of the EDCPTD centrality. The bar chart and ROC curves of these multilayer networks indicate that the proposed approach is a good alternative index to identify real important nodes. Meanwhile, by comparing the behavior of both the proposed method and the aggregated single-layer methods, we demonstrate that neglecting the multiple relationships between nodes may lead to incorrect identification of the most versatile nodes. Furthermore, the Gene Ontology functional annotation demonstrates that the identified top nodes based on the proposed approach play a significant role in many vital biological processes. Finally, we have implemented many centrality methods of multilayer networks (including our method and the published methods) and created a visual software based on the MATLAB GUI, called ENMNFinder, which can be used by other researchers.

  13. Multiple analysis of an unknown optical multilayer coating

    International Nuclear Information System (INIS)

    Dobrowolski, J.A.; Ho, F.C.; Waldorf, A.

    1985-01-01

    Results are given of the analysis at five different laboratories of an unknown optical multilayer coating. In all, eleven different analytical and laboratory techniques were applied to the problem. The multilayer nominally consisted of three dielectric and two metallic layers. It was demonstrated convincingly that with present day techniques it is possible to determine the basic structure of such a coating

  14. Multilayer thin films: sequential assembly of nanocomposite materials

    National Research Council Canada - National Science Library

    Decher, Gero; Schlenoff, Joseph B

    2003-01-01

    ... polymeric or nanoparticulate building blocks, understanding the polymer physical chemistry of multilayers, or characterizing their optical, electrical or biological activities. The reasons for the intense interest in the field are also clearly evident: multilayers bridge the gap between monolayers and spun-on or dip-coated films, ...

  15. A refined model for characterizing x-ray multilayers

    International Nuclear Information System (INIS)

    Oren, A.L.; Henke, B.L.

    1987-12-01

    The ability to quickly and accurately characterize arbitrary multilayers is very valuable for not only can we use the characterizations to predict the reflectivity of a multilayer for any soft x-ray wavelength, we also can generalize the results to apply to other multilayers of the same type. In addition, we can use the characterizations as a means of evaluating various sputtering environments and refining sputtering techniques to obtain better multilayers. In this report we have obtained improved characterizations for sample molybdenum-silicon and vanadium-silicon multilayers. However, we only examined five crystals overall, so the conclusions that we could draw about the structure of general multilayers is limited. Research involving many multilayers manufactured under the same sputtering conditions is clearly in order. In order to best understand multilayer structures it may be necessary to further refine our model, e.g., adopting a Gaussian form for the interface regions. With such improvements we can expect even better agreement with experimental values and continued concurrence with other characterization techniques. 18 refs., 30 figs., 7 tabs

  16. Simulation of reflectivity spectrum for non-absorbing multilayer ...

    Indian Academy of Sciences (India)

    Reflectivity simulation is an essential tool for the design and optimization of optical thin films. We have developed a reflectivity simulator for non-absorbing dielectric multilayer optical thin films using LabVIEW. The name of the substrate material as well as the material and thickness of each layer of the multilayer stack are fed ...

  17. Multi-Periodicity Induces Prominent Optical Phenomena in Plasmonic Multilayers

    DEFF Research Database (Denmark)

    Orlov, Alexey A.; Krylova, A. K.; Zhukovsky, Sergei

    2014-01-01

    We introduce multi-periodicity in plasmonic multilayers and develop a general theory for the description of their eigenwaves. We define the order of multi-periodicity as the number of different kinds of plasmonic interfaces present in the multilayer, and investigate the optical effects that arise...

  18. Multiperiodicity in plasmonic multilayers: General description and diversity of topologies

    DEFF Research Database (Denmark)

    Orlov, Alexey A.; Krylova, Anastasia K.; Zhukovsky, Sergei

    2014-01-01

    We introduce multiperiodicity in periodicmetal-dielectric multilayers by stacking more than two types of metal and/or dielectric layers into the unit cell. A simple way to characterize arbitrary multiperiodic multilayers using permutation vectors is suggested and employed. Effects...

  19. 75 FR 66126 - Multilayered Wood Flooring From China

    Science.gov (United States)

    2010-10-27

    ... COMMISSION Multilayered Wood Flooring From China AGENCY: United States International Trade Commission. ACTION... the United States is materially retarded, by reason of imports from China of multilayered wood... Government of China. Unless the Department of Commerce extends the time for initiation pursuant to sections...

  20. 75 FR 79019 - Multilayered Wood Flooring From China

    Science.gov (United States)

    2010-12-17

    ... COMMISSION Multilayered Wood Flooring From China Determinations On the basis of the record \\1\\ developed in... reason of imports from China of multilayered wood flooring, provided for in subheadings 4409.10, 4409.29... than fair value (LTFV) and subsidized by the Government of China. \\1\\ The record is defined in Sec. 207...

  1. 78 FR 30329 - Multilayered Wood Flooring from China

    Science.gov (United States)

    2013-05-22

    ... COMMISSION Multilayered Wood Flooring from China AGENCY: United States International Trade Commission. ACTION... and 731-TA-1179 (Final) concerning multilayered wood flooring (``MLWF'') from China. For further... States was materially injured by reason of imports of MLWF from China that were sold in the United States...

  2. 76 FR 76435 - Multilayered Wood Flooring From China

    Science.gov (United States)

    2011-12-07

    ... COMMISSION Multilayered Wood Flooring From China Determinations On the basis of the record \\1\\ developed in... China of multilayered wood flooring, provided for in subheadings 4409.10, 4409.29, 4412.31, 4412.32... orders on imports of this product from China. Background The Commission instituted these investigations...

  3. Enhanced UV photoresponse with Au nanoparticles incorporated rGO/Si heterostructure

    Science.gov (United States)

    Chandrakalavathi, T.; Rao Peta, Koteswara; Jeyalakshmi, R.

    2018-02-01

    In this work, we demonstrated Au nanoparticles incorporated reduced graphene oxide (rGO)/Si heterostructure based UV photodetector. The pristine and Au nanoparticles incorporated heterostructure was analyzed and characterized by x-ray photo electron spectroscopy (XPS), Current- Voltage (I-V) characteristics and UV photo detective properties were examined by using UV light emitting diode (LED) with 382 nm wavelengths. The UV photoresponse properties revealed that the Au-rGO/Si heterostructure showed much better photoresponse activity toward UV light than pristine rGO/Si. The experimental results clearly revealed that the photoresponse of Au-rGO/Si heterostructure can be effectively enhanced by 30 times at 382 nm wavelength over pristine rGO/Si. The effect of rGO thickness on performance of UV photodetector was also examined. The improved photoresponse was attributed to localized surface plasmon resonance, in addition high electron transport capability of rGO number of photoexcited electrons collected at interface.

  4. Heterostructures based on two-dimensional layered materials and their potential applications

    KAUST Repository

    Li, Ming-yang

    2015-12-04

    The development of two-dimensional (2D) layered materials is driven by fundamental interest and their potential applications. Atomically thin 2D materials provide a wide range of basic building blocks with unique electrical, optical, and thermal properties which do not exist in their bulk counterparts. The van der Waals interlayer interaction enables the possibility to exfoliate and reassemble different 2D materials into arbitrarily and vertically stacked heterostructures. Recently developed vapor phase growth of 2D materials further paves the way of directly synthesizing vertical and lateral heterojunctions. This review provides insights into the layered 2D heterostructures, with a concise introduction to preparative approaches for 2D materials and heterostructures. These unique 2D heterostructures have abundant implications for many potential applications.

  5. Capacitance-voltage characteristics of ZnO/GaN heterostructures

    International Nuclear Information System (INIS)

    Oh, D.C.; Suzuki, T.; Kim, J.J.; Makino, H.; Hanada, T.; Yao, T.; Ko, H.J.

    2005-01-01

    We have investigated the electrical properties of ZnO/GaN heterostructures by capacitance-voltage (C-V) measurements. ZnO/GaN heterostructures are fabricated on Ga-polar GaN templates by plasma-assisted molecular-beam epitaxy. The ZnO/GaN heterostructures exhibit a plateau region of 6.5 V in the C-V curves measured at 10 kHz and room temperature. Moreover, it is found that a large electron density is accumulated at the interface of ZnO/GaN, where the concentration approaches ∼10 18 cm -3 . The distinct C-V characteristics are ascribed to large conduction-band discontinuity at the ZnO/GaN heterointerface. It is suggested that the ZnO/GaN heterostructure is a very promising material for the application to heterojunction transistors

  6. Optical and electrical properties of colloidal (spherical Au)-(spinel ferrite nanorod) heterostructures.

    Science.gov (United States)

    George, Chandramohan; Genovese, Alessandro; Qiao, Fen; Korobchevskaya, Kseniya; Comin, Alberto; Falqui, Andrea; Marras, Sergio; Roig, Anna; Zhang, Yang; Krahne, Roman; Manna, Liberato

    2011-11-01

    We report here a simple synthetic route to Au-Fe(x)O(y) heterostructures in which spinel ferrite (Fe(x)O(y)) grows as a nanorod on a spherical gold (Au) seed. The large red shift in the plasmon resonance in the heterostructures could be explained by a dielectric effect (although we could not entirely exclude a contribution due to electron transfer from Au to defect states at the Au-Fe(x)O(y) interface), while the magnetic properties of the Au-Fe(x)O(y) heterostructures were basically the same as those of the corresponding nanocrystals after Au leaching. In films of Au-Fe(x)O(y) heterostructures the electrical conductivity appeared to be mediated by the Au domains.

  7. Arsenene-Based Heterostructures: Highly Efficient Bifunctional Materials for Photovoltaics and Photocatalytics.

    Science.gov (United States)

    Niu, Xianghong; Li, Yunhai; Zhou, Qionghua; Shu, Huabing; Wang, Jinlan

    2017-12-13

    Constructing suitable type II heterostructures is a reliable solution for high-efficient photovoltaic and photocatalytic materials. Arsenene, as a rising member of monoelemental two-dimensional materials, shows great potential as a building block of heterostructures because of its suitable band gap, high carrier mobility, and good optical properties. On the basis of accurate band structure calculations by combining the many-body perturbation GW method with an extrapolation technique, we demonstrate that arsenene-based heterostructures paired with molybdenum disulfide, tetracyano-quinodimethane, or tetracyanonaphtho-quinodimethane can form type II band alignments. These arsenene-based heterostructures cannot only satisfy all the requirements as photocatalysts for photocatalytic water splitting but can also show an excellent power conversion efficiency of ∼20% as potential photovoltaics.

  8. Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures

    Directory of Open Access Journals (Sweden)

    Jae Yoon Lee

    2016-10-01

    Full Text Available Two-dimensional (2D semiconductors such as transition metal dichalcogenides (TMDCs and black phosphorous have drawn tremendous attention as an emerging optical material due to their unique and remarkable optical properties. In addition, the ability to create the atomically-controlled van der Waals (vdW heterostructures enables realizing novel optoelectronic devices that are distinct from conventional bulk counterparts. In this short review, we first present the atomic and electronic structures of 2D semiconducting TMDCs and their exceptional optical properties, and further discuss the fabrication and distinctive features of vdW heterostructures assembled from different kinds of 2D materials with various physical properties. We then focus on reviewing the recent progress on the fabrication of 2D semiconductor optoelectronic devices based on vdW heterostructures including photodetectors, solar cells, and light-emitting devices. Finally, we highlight the perspectives and challenges of optoelectronics based on 2D semiconductor heterostructures.

  9. Enhanced piezoelectric response in the artificial ferroelectric polymer multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, X. L.; Wang, J. L., E-mail: jlwang@mail.sitp.ac.cn, E-mail: lin-tie@mail.sitp.ac.cn; Tian, B. B.; Liu, B. L.; Wang, X. D.; Sun, S.; Zou, Y. H.; Lin, T., E-mail: jlwang@mail.sitp.ac.cn, E-mail: lin-tie@mail.sitp.ac.cn; Sun, J. L.; Meng, X. J.; Chu, J. H. [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Yu Tian Road 500, Shanghai 200083 (China); University of Chinese Academy of Sciences, No.19A Yuquan Road, Beijing 100049 (China)

    2014-12-01

    An actuator with a high piezoelectric response, the ferroelectric polymer multilayer actuator, is described. The ferroelectric polymer multilayers consisting of alternative ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer and relaxor poly(vinylidene fluoride-trifluoroethylene-chlorofloroethylene) (P(VDF-TrFE-CFE)) terpolymer with different periodicities and fixed total thickness are prepared by the Langmuir-Blodgett technique. Both X-ray diffraction and Raman spectroscopic measurements indicate that the structure of the multilayer with thin alternating layer is similar to that of the ferroelectric copolymer. Compared with that of the copolymer, it is found that the piezoelectric coefficient of the multilayer could be improved by 57%. We attributed the enhanced piezoelectric response of the multilayers to the internal electric fields that arises from the electrostatic couplings between different layers.

  10. An X-ray grazing incidence phase multilayer grating

    CERN Document Server

    Chernov, V A; Mytnichenko, S V

    2001-01-01

    An X-ray grazing incidence phase multilayer grating, representing a thin grating placed on a multilayer mirror, is proposed. A high efficiency of grating diffraction can be obtained by the possibility of changing the phase shift of the wave diffracted from the multilayer under the Bragg and total external reflection conditions. A grazing incidence phase multilayer grating consisting of Pt grating stripes on a Ni/C multilayer and optimized for the hard X-ray range was fabricated. Its diffraction properties were studied at photon energies of 7 and 8 keV. The obtained maximum value of the diffraction efficiency of the +1 grating order was 9% at 7 keV and 6.5% at 8 keV. The data obtained are in a rather good accordance with the theory.

  11. Superconductivity and vortex properties in various multilayers

    International Nuclear Information System (INIS)

    Koorevaar, P.

    1994-01-01

    In this thesis three qualitatively different type of superconducting multilayers are studied. We discuss the vortex lattice structure in Nb/NbZr multilayers, a system where both type of constituting layers are superconducting. At certain temperatures and for parallel fields close to H c2parallel , the Nb/NbZr system has a strongly modulated order parameter, and in this aspect resembles the high-Tc materials. By lowering the field the modulation decreases, having important consequences for the vortex lattice structure. By studying the transport critical currents we show that in the case of strong modulation the vortex lattice has a kinked structure, but at weaker modulations the vortices are straight, and the change in modulation actually results in a vortex lattice transition. Our study confirms the picture of the existence of kinked vortex lattices, but it is rather surprising that these kinked structures can exist in a system which in itself is not at all that anisotropic. It indicates the relevance of other parameters governing the vortex lattice structure. (orig.)

  12. Multilayer and multimetric quality control: the Supercourse.

    Science.gov (United States)

    Linkov, Faina; Omenn, Gilbert S; Serageldin, Ismail; Cerf, Vinton; Lovalekar, Mita; LaPorte, Ronald

    2010-12-01

    Cancer-related presentations are rapidly communicated through thousands of Websites, chat rooms, newsgroups, list servers, newsletters, YouTube, and e-mails, with no specific attention to the validity of the reported findings. Quality control (QC) of cancer education lectures on the Web is an important concern, just like the quality assessment of all information found on the Web. This paper discusses the Supercourse, a global library of 3,600 online lectures available at www.pitt.edu/~super1 and several alternative quality control approaches that are being developed as part of this global effort. Peer review may not be optimal for the review of online lectures because it is labor-intensive and has low throughput. To our knowledge, we are among the first to begin a multilayer and multimetric evaluation approach toward QC (MQC) of PowerPoint lectures on the Web. We hope that future scientific research on peer review as well as on emerging multilayer QC methodologies will help us to determine best measures of QC, especially in the field of rapidly developing cancer education.

  13. Polymer multilayer tattooing for enhanced DNA vaccination

    Science.gov (United States)

    Demuth, Peter C.; Min, Younjin; Huang, Bonnie; Kramer, Joshua A.; Miller, Andrew D.; Barouch, Dan H.; Hammond, Paula T.; Irvine, Darrell J.

    2013-04-01

    DNA vaccines have many potential benefits but have failed to generate robust immune responses in humans. Recently, methods such as in vivo electroporation have demonstrated improved performance, but an optimal strategy for safe, reproducible, and pain-free DNA vaccination remains elusive. Here we report an approach for rapid implantation of vaccine-loaded polymer films carrying DNA, immune-stimulatory RNA, and biodegradable polycations into the immune-cell-rich epidermis, using microneedles coated with releasable polyelectrolyte multilayers. Films transferred into the skin following brief microneedle application promoted local transfection and controlled the persistence of DNA and adjuvants in the skin from days to weeks, with kinetics determined by the film composition. These ‘multilayer tattoo’ DNA vaccines induced immune responses against a model HIV antigen comparable to electroporation in mice, enhanced memory T-cell generation, and elicited 140-fold higher gene expression in non-human primate skin than intradermal DNA injection, indicating the potential of this strategy for enhancing DNA vaccination.

  14. Measure of Node Similarity in Multilayer Networks.

    Directory of Open Access Journals (Sweden)

    Anders Mollgaard

    Full Text Available The weight of links in a network is often related to the similarity of the nodes. Here, we introduce a simple tunable measure for analysing the similarity of nodes across different link weights. In particular, we use the measure to analyze homophily in a group of 659 freshman students at a large university. Our analysis is based on data obtained using smartphones equipped with custom data collection software, complemented by questionnaire-based data. The network of social contacts is represented as a weighted multilayer network constructed from different channels of telecommunication as well as data on face-to-face contacts. We find that even strongly connected individuals are not more similar with respect to basic personality traits than randomly chosen pairs of individuals. In contrast, several socio-demographics variables have a significant degree of similarity. We further observe that similarity might be present in one layer of the multilayer network and simultaneously be absent in the other layers. For a variable such as gender, our measure reveals a transition from similarity between nodes connected with links of relatively low weight to dis-similarity for the nodes connected by the strongest links. We finally analyze the overlap between layers in the network for different levels of acquaintanceships.

  15. Training multi-layered neural network neocognitron.

    Science.gov (United States)

    Fukushima, Kunihiko

    2013-04-01

    This paper proposes new learning rules suited for training multi-layered neural networks and applies them to the neocognitron. The neocognitron is a hierarchical multi-layered neural network capable of robust visual pattern recognition. It acquires the ability to recognize visual patterns through learning. For training intermediate layers of the hierarchical network of the neocognitron, we use a new learning rule named add-if-silent. By the use of the add-if-silent rule, the learning process becomes much simpler and more stable, and the computational cost for learning is largely reduced. Nevertheless, a high recognition rate can be kept without increasing the scale of the network. For the highest stage of the network, we use the method of interpolating-vector. We have previously reported that the recognition rate is greatly increased if this method is used during recognition. This paper proposes a new method of using it for both learning and recognition. Computer simulation demonstrates that the new neocognitron, which uses the add-if-silent and the interpolating-vector, produces a higher recognition rate for handwritten digits recognition with a smaller scale of the network than the neocognitron of previous versions. Copyright © 2013 Elsevier Ltd. All rights reserved.

  16. Dry etching technologies for reflective multilayer

    Science.gov (United States)

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

    2012-11-01

    We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

  17. Membership generation using multilayer neural network

    Science.gov (United States)

    Kim, Jaeseok

    1992-01-01

    There has been intensive research in neural network applications to pattern recognition problems. Particularly, the back-propagation network has attracted many researchers because of its outstanding performance in pattern recognition applications. In this section, we describe a new method to generate membership functions from training data using a multilayer neural network. The basic idea behind the approach is as follows. The output values of a sigmoid activation function of a neuron bear remarkable resemblance to membership values. Therefore, we can regard the sigmoid activation values as the membership values in fuzzy set theory. Thus, in order to generate class membership values, we first train a suitable multilayer network using a training algorithm such as the back-propagation algorithm. After the training procedure converges, the resulting network can be treated as a membership generation network, where the inputs are feature values and the outputs are membership values in the different classes. This method allows fairly complex membership functions to be generated because the network is highly nonlinear in general. Also, it is to be noted that the membership functions are generated from a classification point of view. For pattern recognition applications, this is highly desirable, although the membership values may not be indicative of the degree of typicality of a feature value in a particular class.

  18. Multiple leaders on a multilayer social media

    International Nuclear Information System (INIS)

    Borondo, J.; Morales, A.J.; Benito, R.M.; Losada, J.C.

    2015-01-01

    Twitter is a social media platform where users can interact in three different ways: following, mentioning, or retweeting. Accordingly, one can define Twitter as a multilayer social network where each layer represents one of the three interaction mechanisms. First, we review the main findings of our previous work regarding two Twitter political conversations: the 2010 Venezuelan protest and the 2011 Spanish general elections. We found that the structure of the follower layer conditions the retweet layer, as having a low number of followers represents a constrain to effectively propagate information. The collapsed directed multiplex network does not present a rich-club ordering, as politicians presided large communities of regular users in the mention layer; while media accounts were the sources from which people retweeted information. However, when considering reciprocal interactions the rich-club ordering emerges, as elite accounts preferentially interacted among themselves and largely ignored the crowd. Finally, we explore the main relationships between the community structure of the three layers. At the follower level users cluster in large and dense communities holding various hubs, that break into smaller and more segregated ones in the mention and retweet layers. Hence, we argue that to fully understand Twitter we have to analyze it as a multilayer social network, evaluating the three types of interactions

  19. Mo-C Multilayered CVD Coatings

    Directory of Open Access Journals (Sweden)

    A. Sagalovych

    2013-12-01

    Full Text Available Production processes of multi-layered Mo-C coatings by the method of chemical vapor deposition (CVD with the use of organometallic compounds were developed. Coatings are applied on technical purpose steel DIN 1.2379 (H12F1 and DIN 1.7709 (25H2MF (ÉI10 heat-treated ball with the high class of surface roughness (> 10. The average deposition rate was 50 μm / h. The optimal conditions of deposition coatings for different technological schemas were defined. Metallographic investigations of the obtained coatings were carried out. Tribological studies of the friction and wear characteristics of sliding friction in conditions of boundary lubrication of Ï-S multilayered CVD coatings shows, that coatings have low friction coefficients (0075-0095 at loads up to 2.0 kN, showed high resistance to wear and are effective in increasing the stability of the pair for precision friction pairs of hydraulical units.

  20. Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing

    OpenAIRE

    Tang, Jianshi; Wang, Chiu-Yen; Xiu, Faxian; Zhou, Yi; Chen, Lih-Juann; Wang, Kang L.

    2011-01-01

    We reviewed the formation of Ge nanowire heterostructure and its field-effect characteristics by a controlled reaction between a single-crystalline Ge nanowire and Ni contact pads using a facile rapid thermal annealing process. Scanning electron microscopy and transmission electron microscopy demonstrated a wide temperature range of 400~500°C to convert the Ge nanowire to a single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure with atomically sharp interfaces. More importantly, we studie...

  1. Interlayer coupling enhancement in graphene/hexagonal boron nitride heterostructures by intercalated defects and vacancies

    OpenAIRE

    Park, Sohee; Park, Changwon; Kim, Gunn

    2014-01-01

    Among two-dimensional atomic crystals, hexagonal boron nitride (hBN) is one of the most remarkable materials to fabricate heterostructures revealing unusual properties. We perform first-principles calculations to determine whether intercalated metal atoms and vacancies can mediate interfacial coupling and influence the structural and electronic properties of the graphene/hBN heterostructure. Metal impurity atoms (Li, K, Cr, Mn, Co, and Cu) as extrinsic defects between the graphene and hBN she...

  2. Terahertz-frequency InN/GaN heterostructure-barrier varactor diodes

    International Nuclear Information System (INIS)

    Reklaitis, A

    2008-01-01

    Frequency multipliers based on the single-barrier and double-barrier InN/GaN heterostructure varactor diodes are suggested. The DC and large-signal AC vertical electron transport in the InN/GaN diodes are investigated by ensemble Monte Carlo simulations. It is found that InN/GaN heterostructure-barrier varactor diodes are able to operate as efficient frequency multipliers in the frequency range up to 1 THz

  3. Quantum Engineering of States in Heterostructure-based Detectors for Enhance Performance

    Science.gov (United States)

    2017-05-26

    each year. This is UIC’s highest teaching award. Elected to the College of Fellows, American Institute of Medical and Biomedical Engineers ...AFRL-AFOSR-VA-TR-2017-0109 Quantum engineering of heterostructure detectors for enhanced performance Michael Stroscio UNIVERSITY OF ILLINOIS Final...SUBTITLE Quantum Engineering of States in Heterostructure-based Detectors for Enhance Performance 5a. CONTRACT NUMBER 5b. GRANT NUMBER FA9550-15-1

  4. Organoclay hybrid materials as precursors of porous ZnO/silica-clay heterostructures for photocatalytic applications

    OpenAIRE

    Akkari, Marwa; Aranda, Pilar; Ben Haj Amara, Abdessalem; Ruiz-Hitzky, Eduardo

    2016-01-01

    In this study, ZnO/SiO2-clay heterostructures were successfully synthesized by a facile two-step process applied to two types of clays: montmorillonite layered silicate and sepiolite microfibrous clay mineral. In the first step, intermediate silica–organoclay hybrid heterostructures were prepared following a colloidal route based on the controlled hydrolysis of tetramethoxysilane in the presence of the starting organoclay. Later on, pre-formed ZnO nanoparticles (NP) dispersed in 2-propanol we...

  5. Heterostructure of Au nanocluster tipping on a ZnS quantum rod: controlled synthesis and novel luminescence.

    Science.gov (United States)

    Tian, Yang; Wang, Ligang; Yu, Shanshan; Zhou, Weiwei

    2015-08-14

    Heterostructures of metal nanoparticles and semiconductors are widely studied for their unique properties. However, few reports are available on the heterostructure of metal nanoclusters and semiconductors. In the present study, a heterostructure, in which gold nanoclusters selectively locate at ZnS quantum rod (QR) tips, was fabricated using a two-step solvothermal route. The composition, intrinsic crystallography, and junction of the prepared heterostructure were thoroughly investigated, and it was observed to exhibit novel luminescent behaviours. By comparison with the individual components of ZnS QRs and gold clusters, the resultant heterostructure shows an enhanced exciton emission and complete depression of defect emission for the ZnS component, and a pronounced red emission for the gold nanocluster component. The mechanism of these properties and the charge transfer between gold nanoclusters and ZnS QRs were also explored. The size and location of gold in the heterostructure were also controlled during synthesis to study their effects on the luminescence.

  6. Graphene/blue-phosphorus heterostructure as potential anode materials for sodium-ion batteries

    Science.gov (United States)

    Fan, Kaimin; Tang, Ting; Wu, Shiyun; Zhang, Zhiyuan

    2018-01-01

    The first-principles calculations based on density functional theory (DFT) have been implemented to investigate the graphene/blue-phosphorus (G/BP) heterostructure as potential anode material for SIBs. The adsorption and diffusion behaviors of sodium (Na) in G/BP heterostructure and the effect of external electric field on Na adsorption have been investigated. The results indicate that G/BP heterostructure with Na adsorption is metallic due to Na incorporation, which is of benefit for electronic conductivity as anode material. The results show that the design of G/BP heterostructure is an efficient scheme to enhance the Na adsorption in G/BP without affecting the high mobility of Na in the G/BP heterostructure surface. The present work demonstrates that the external electric field can effectively modulate the adsorption of Na, and the adsorption behavior of Na is more sensitive to the external electric field when E > 0.10 V Å-1 in G/BP heterostructure. The Mulliken population analysis and DOS calculations have been performed to explore the charge transfer and the interaction between Na and G/BP.

  7. High-efficiency super capacitors based on hetero-structured α-MnO2 nanorods

    International Nuclear Information System (INIS)

    Ghouri, Zafar Khan; Shaheer Akhtar, M.; Zahoor, Awan; Barakat, Nasser A.M.; Han, Weidong; Park, Mira; Pant, Bishweshwar; Saud, Prem Singh; Lee, Cho Hye; Kim, Hak Yong

    2015-01-01

    Highlights: • Hetero-structured α-MnO 2 nanorods are prepared by a facile hydrothermal route. • It is applied as active electrode materials for supercapacitor. • A high specific capacitance of 298 Fg −1 with a superior long term cyclic stability is achieved. • Supercapacitor shows high specific capacitance retention 94% after 1000 cycles. - Abstract: Hetero-structured manganese dioxide nanorods with α phase (α-MnO 2 ) were prepared by a facile hydrothermal route at low temperature. X-ray diffraction, scanning electron microscopy, transmission electron microscopy and nitrogen adsorption–desorption measurements were used to characterize the prepared hetero-structured α-MnO 2 nanorods. Supercapacitive performance of the hetero-structured α-MnO 2 nanomaterials as active electrode material was evaluated by cyclic voltammetry (CV) in alkaline medium. The MnO 2 hetero-structure with 2 × 2 tunnels constructed from double chains of octahedral [MnO 6 ] structure yield a significantly high specific capacitance of 298 Fg −1 at 5 mV s −1 and demonstrated a superior long term cyclic stability, with specific capacitance retention about 94% after 1000 cycles. The superior supercapacitive performance of the hetero-structured α-MnO 2 electrode is due to its high specific surface area and unique hierarchy architecture which facilitate fast electron and ion transport

  8. Size-tunable band alignment and optoelectronic properties of transition metal dichalcogenide van der Waals heterostructures

    Science.gov (United States)

    Zhao, Yipeng; Yu, Wangbing; Ouyang, Gang

    2018-01-01

    2D transition metal dichalcogenide (TMDC)-based heterostructures exhibit several fascinating properties that can address the emerging market of energy conversion and storage devices. Current achievements show that the vertical stacked TMDC heterostructures can form type II band alignment and possess significant optoelectronic properties. However, a detailed analytical understanding of how to quantify the band alignment and band offset as well as the optimized power conversion efficiency (PCE) is still lacking. Herein, we propose an analytical model to exhibit the PCEs of TMDC van der Waals (vdW) heterostructures and explore the intrinsic mechanism of photovoltaic conversion based on the detailed balance principle and atomic-bond-relaxation correlation mechanism. We find that the PCE of monolayer MoS2/WSe2 can be up to 1.70%, and that of the MoS2/WSe2 vdW heterostructures increases with thickness, owing to increasing optical absorption. Moreover, the results are validated by comparing them with the available evidence, providing realistic efficiency targets and design principles. Highlights • Both electronic and optoelectronic models are developed for vertical stacked MoS2/WSe2 heterostructures. • The underlying mechanism on size effect of electronic and optoelectronic properties for vertical stacked MoS2/WSe2 heterostructures is clarified. • The macroscopically measurable quantities and the microscopical bond identities are connected.

  9. Organoclay hybrid materials as precursors of porous ZnO/silica-clay heterostructures for photocatalytic applications

    Directory of Open Access Journals (Sweden)

    Marwa Akkari

    2016-12-01

    Full Text Available In this study, ZnO/SiO2-clay heterostructures were successfully synthesized by a facile two-step process applied to two types of clays: montmorillonite layered silicate and sepiolite microfibrous clay mineral. In the first step, intermediate silica–organoclay hybrid heterostructures were prepared following a colloidal route based on the controlled hydrolysis of tetramethoxysilane in the presence of the starting organoclay. Later on, pre-formed ZnO nanoparticles (NP dispersed in 2-propanol were incorporated under ultrasound irradiation to the silica–organoclay hybrid heterostructures dispersed in 2-propanol, and finally, the resulting solids were calcinated to eliminate the organic matter and to produce ZnO nanoparticles (NP homogeneously assembled to the clay–SiO2 framework. In the case of montmorillonite the resulting materials were identified as delaminated clays of ZnO/SiO2-clay composition, whereas for sepiolite, the resulting heterostructure is constituted by the assembling of ZnO NP to the sepiolite–silica substrate only affecting the external surface of the clay. The structural and morphological features of the prepared heterostructures were characterized by diverse physico-chemical techniques (such as XRD, FTIR, TEM, FE-SEM. The efficiency of these new porous ZnO/SiO2-clay heterostructures as potential photocatalysts in the degradation of organic dyes and the removal of pharmaceutical drugs in water solution was tested using methylene blue and ibuprofen compounds, respectively, as model of pollutants.

  10. Magnetization Reversal by Out-of-plane Voltage in BiFeO3-based Multiferroic Heterostructures

    OpenAIRE

    Wang, J. J.; Hu, J.M.; Peng, Ren-Ci; Gao, Y.; Shen, Y.; Chen, L. Q.; Nan, C. W.

    2015-01-01

    Voltage controlled 180? magnetization reversal has been achieved in BiFeO3-based multiferroic heterostructures, which is promising for the future development of low-power spintronic devices. However, all existing reports involve the use of an in-plane voltage that is unfavorable for practical device applications. Here, we investigate, using phase-field simulations, the out-of-plane (i.e., perpendicular to heterostructures) voltage controlled magnetism in heterostructures consisting of CoFe na...

  11. Polarization-coupled tunable resistive behavior in oxide ferroelectric heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Gruverman, Alexei [Univ. of Nebraska, Lincoln, NE (United States); Tsymbal, Evgeny Y. [Univ. of Nebraska, Lincoln, NE (United States); Eom, Chang-Beom [Univ. of Wisconsin, Madison, WI (United States)

    2017-05-03

    This research focuses on investigation of the physical mechanism of the electrically and mechanically tunable resistive behavior in oxide ferroelectric heterostructures with engineered interfaces realized via a strong coupling of ferroelectric polarization with tunneling electroresistance and metal-insulator (M-I) transitions. This report describes observation of electrically conductive domain walls in semiconducting ferroelectrics, voltage-free control of resistive switching and demonstration of a new mechanism of electrical control of 2D electron gas (2DEG) at oxide interfaces. The research goals are achieved by creating strong synergy between cutting-edge fabrication of epitaxial single-crystalline complex oxides, nanoscale electrical characterization by scanning probe microscopy and theoretical modeling of the observed phenomena. The concept of the ferroelectric devices with electrically and mechanically tunable nonvolatile resistance represents a new paradigm shift in realization of the next-generation of non-volatile memory devices and low-power logic switches.

  12. Evanescent channels and scattering in cylindrical nanowire heterostructures

    Science.gov (United States)

    Racec, P. N.; Racec, E. R.; Neidhardt, H.

    2009-04-01

    We investigate the scattering phenomena produced by a general finite-range nonseparable potential in a multichannel two-probe cylindrical nanowire heterostructure. The multichannel current scattering matrix is efficiently computed using the R -matrix formalism extended for cylindrical coordinates. Considering the contribution of the evanescent channels to the scattering matrix, we are able to put in evidence the specific dips in the tunneling coefficient in the case of an attractive potential. The cylindrical symmetry cancels the “selection rules” known for Cartesian coordinates. If the attractive potential is superposed over a nonuniform potential along the nanowire then resonant transmission peaks appear. We can characterize them quantitatively through the poles of the current scattering matrix. Detailed maps of the localization probability density sustain the physical interpretation of the resonances (dips and peaks). Our formalism is applied to a variety of model systems such as a quantum dot, a core/shell quantum ring, or a double barrier embedded into the nanocylinder.

  13. Giant thermopower in superconducting heterostructures with spin-active interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Kalenkov, Mikhail S. [I.E. Tamm Department of Theoretical Physics, P.N. Lebedev Physical Institute, 119991 Moscow (Russian Federation); Laboratory of Cryogenic Nanoelectronics, Nizhny Novgorod State Technical University, 603950 Nizhny Novgorod (Russian Federation); Zaikin, Andrei D. [Institut für Nanotechnologie, Karlsruher Institut für Technologie (KIT), 76021 Karlsruhe (Germany); I.E. Tamm Department of Theoretical Physics, P.N. Lebedev Physical Institute, 119991 Moscow (Russian Federation)

    2015-06-01

    We predict parametrically strong enhancement of the thermoelectric effect in metallic bilayers consisting of two superconductors separated by a spin-active interface. The physical mechanism for such an enhancement is directly related to electron–hole imbalance generated by spin-sensitive quasiparticle scattering at the interface between superconducting layers. We explicitly evaluate the thermoelectric currents flowing in the system and demonstrate that they can reach maximum values comparable to the critical ones for superconductors under consideration. - Highlights: • Strong enhancement of the thermoelectric effect in superconducting heterostructures. • Generation of the electron-hole imbalance by spin-sensitive quasiparticle scattering. • Thermoelectric currents can reach maximum values comparable to the critical ones.

  14. Numerical methods for semiconductor heterostructures with band nonparabolicity

    International Nuclear Information System (INIS)

    Wang Weichung; Hwang Tsungmin; Lin Wenwei; Liu Jinnliang

    2003-01-01

    This article presents numerical methods for computing bound state energies and associated wave functions of three-dimensional semiconductor heterostructures with special interest in the numerical treatment of the effect of band nonparabolicity. A nonuniform finite difference method is presented to approximate a model of a cylindrical-shaped semiconductor quantum dot embedded in another semiconductor matrix. A matrix reduction method is then proposed to dramatically reduce huge eigenvalue systems to relatively very small subsystems. Moreover, the nonparabolic band structure results in a cubic type of nonlinear eigenvalue problems for which a cubic Jacobi-Davidson method with an explicit nonequivalence deflation method are proposed to compute all the desired eigenpairs. Numerical results are given to illustrate the spectrum of energy levels and the corresponding wave functions in rather detail

  15. The Origin of Tc Enhancement in Heterostructure Cuprate Superconductors

    Directory of Open Access Journals (Sweden)

    Doron L. Bergman

    2011-10-01

    Full Text Available Recent experiments on heterostructures composed of two or more films of cuprate superconductors of different oxygen doping levels have shown a remarkable Tc enhancement (up to 50% relative to single compound films. We provide a simple explanation of the enhancement which arises naturally from a collection of experimental works. We show that the enhancement could be caused by a structural change in the lattice, namely an increase in the distance of the apical oxygen from the copper-oxygen plane. This increase modifies the effective off-site interaction in the plane which in turn enhances the d-wave superconductivity order parameter. To illustrate this point we study the extended Hubbard model using the fluctuation exchange approximation.

  16. Biaxial Compressive Strain Engineering in Graphene/Boron Nitride Heterostructures

    Science.gov (United States)

    Pan, Wei; Xiao, Jianliang; Zhu, Junwei; Yu, Chenxi; Zhang, Gang; Ni, Zhenhua; Watanabe, K.; Taniguchi, T.; Shi, Yi; Wang, Xinran

    2012-11-01

    Strain engineered graphene has been predicted to show many interesting physics and device applications. Here we study biaxial compressive strain in graphene/hexagonal boron nitride heterostructures after thermal cycling to high temperatures likely due to their thermal expansion coefficient mismatch. The appearance of sub-micron self-supporting bubbles indicates that the strain is spatially inhomogeneous. Finite element modeling suggests that the strain is concentrated on the edges with regular nano-scale wrinkles, which could be a playground for strain engineering in graphene. Raman spectroscopy and mapping is employed to quantitatively probe the magnitude and distribution of strain. From the temperature-dependent shifts of Raman G and 2D peaks, we estimate the TEC of graphene from room temperature to above 1000K for the first time.

  17. Epitaxial growth of Fe/BaTiO3 heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Brivio, S., E-mail: m.gooley@elsevier.com [LNESS, Dipartimento di Fisica, Politecnico di Milano, via Anzani 42, 22100, Como (Italy); Rinaldi, C.; Petti, D.; Bertacco, R. [LNESS, Dipartimento di Fisica, Politecnico di Milano, via Anzani 42, 22100, Como (Italy); Sanchez, F. [Institut de Ciencia de Materials de Barcelona, Consejo Superior de Investigaciones Cientificas, Campus Universitat Autonoma de Barcelona, Bellaterra 08193, Catalunya (Spain)

    2011-06-30

    The realization of epitaxial heterostructures involving ferroelectric (FE) and ferromagnetic (FM) materials is one of the possible routes towards the realization of devices exploiting sizable magnetoelectric effects. In this paper we demonstrate the epitaxial growth of Fe on BaTiO{sub 3}(001) as this system represents a prototypical example of interface between well known FE and FM materials with bcc and perovskite structure respectively, both with Curie temperature well above 300 K. Fe grows on BaTiO{sub 3} with 45 deg. rotation of its cubic lattice with respect to that of the substrate in order to reduce the lattice mismatch. Negligible interdiffusion of Ba and Ti cations or Fe atoms is found by X-ray photoemission spectroscopy, while a sizable Fe oxidation occurs within an interfacial layer with thicknesses thinner than 3 nm.

  18. Multi-color imaging of magnetic Co/Pt heterostructures

    Directory of Open Access Journals (Sweden)

    Felix Willems

    2017-01-01

    Full Text Available We present an element specific and spatially resolved view of magnetic domains in Co/Pt heterostructures in the extreme ultraviolet spectral range. Resonant small-angle scattering and coherent imaging with Fourier-transform holography reveal nanoscale magnetic domain networks via magnetic dichroism of Co at the M2,3 edges as well as via strong dichroic signals at the O2,3 and N6,7 edges of Pt. We demonstrate for the first time simultaneous, two-color coherent imaging at a free-electron laser facility paving the way for a direct real space access to ultrafast magnetization dynamics in complex multicomponent material systems.

  19. Antiferroelectric Materials, Applications and Recent Progress on Multiferroic Heterostructures

    Science.gov (United States)

    Zhou, Ziyao; Yang, Qu; Liu, Ming; Zhang, Zhiguo; Zhang, Xinyang; Sun, Dazhi; Nan, Tianxiang; Sun, Nianxiang; Chen, Xing

    2015-04-01

    Antiferroelectric (AFE) materials with adjacent dipoles oriented in antiparallel directions have a double polarization hysteresis loops. An electric field (E-field)-induced AFE-ferroelectric (FE) phase transition takes place in such materials, leading to a large lattice strain and energy change. The high dielectric constant and the distinct phase transition in AFE materials provide great opportunities for the realization of energy storage devices like super-capacitors and energy conversion devices such as AFE MEMS applications. Lots of work has been done in this field since 60-70 s. Recently, the strain tuning of the spin, charge and orbital orderings and their interactions in complex oxides and multiferroic heterostructures have received great attention. In these systems, a single control parameter of lattice strain is used to control lattice-spin, lattice-phonon, and lattice-charge interactions and tailor properties or create a transition between distinct magnetic/electronic phases. Due to the large strain/stress arising from the phase transition, AFE materials are great candidates for integrating with ferromagnetic (FM) materials to realize in situ manipulation of magnetism and lattice-ordered parameters by voltage. In this paper, we introduce the AFE material and it's applications shortly and then review the recent progress in AFEs based on multiferroic heterostructures. These new multiferroic materials could pave a new way towards next generation light, compact, fast and energy efficient voltage tunable RF/microwave, spintronic and memory devices promising approaches to in situ manipulation of lattice-coupled order parameters is to grow epitaxial oxide films on FE/ferroelastic substrates.

  20. GaN heterostructures for biosensing and radiation detection

    Energy Technology Data Exchange (ETDEWEB)

    Howgate, John D.

    2012-12-11

    In this thesis I show the results from our investigation of the interface between gallium nitride wide bandgap semiconductor heterostructures and (bio)molecular systems on their surfaces for biosensing, bioelectronics, and photoelectric applications, with a large emphasis on the processes arising from high energy ionizing irradiation, including heterostructure photoelectric gain mechanisms. Wide bandgap semiconductors, such as gallium nitride, have received increasing attention as potential components in advanced organic/inorganic hybrid systems. Working to further this topic, we determine a new semiconductor alignment required for low energy photo-induced charge transfer ionization of alkyl chains well below the energy normally required for molecular cleavage, show original results of the influence of binding methods on enzyme functionality in conjunction with a novel electrochemical and environmental control system and demonstrate new possibilities to significantly improve upon pH measurements through the use of high sensitivity devices. Furthermore, based on the extension of this work to support future studies of radiation effects on cell systems, we present a detailed characterization of new simultaneous chemical sensing and ionizing radiation dosimetry using single devices. We found that their pH sensitivity was retained during X-ray irradiation and that the fundamental characteristics can be used to separate the irradiation signal from the pH response without compromising operational stability. These data provide clear indications of the separate response mechanism tied to the presence of a two-dimensional electron gas channel. Here, we found new results exhibiting exceptionally high gains and independence of the well-known persistent photoconductivity for soft X-rays and high energy particles in the ultralow dose-rate regime. This material system provides the capability for high sensitivity and resolution real time monitoring, which is competitive with and

  1. GaN heterostructures for biosensing and radiation detection

    International Nuclear Information System (INIS)

    Howgate, John D.

    2012-01-01

    In this thesis I show the results from our investigation of the interface between gallium nitride wide bandgap semiconductor heterostructures and (bio)molecular systems on their surfaces for biosensing, bioelectronics, and photoelectric applications, with a large emphasis on the processes arising from high energy ionizing irradiation, including heterostructure photoelectric gain mechanisms. Wide bandgap semiconductors, such as gallium nitride, have received increasing attention as potential components in advanced organic/inorganic hybrid systems. Working to further this topic, we determine a new semiconductor alignment required for low energy photo-induced charge transfer ionization of alkyl chains well below the energy normally required for molecular cleavage, show original results of the influence of binding methods on enzyme functionality in conjunction with a novel electrochemical and environmental control system and demonstrate new possibilities to significantly improve upon pH measurements through the use of high sensitivity devices. Furthermore, based on the extension of this work to support future studies of radiation effects on cell systems, we present a detailed characterization of new simultaneous chemical sensing and ionizing radiation dosimetry using single devices. We found that their pH sensitivity was retained during X-ray irradiation and that the fundamental characteristics can be used to separate the irradiation signal from the pH response without compromising operational stability. These data provide clear indications of the separate response mechanism tied to the presence of a two-dimensional electron gas channel. Here, we found new results exhibiting exceptionally high gains and independence of the well-known persistent photoconductivity for soft X-rays and high energy particles in the ultralow dose-rate regime. This material system provides the capability for high sensitivity and resolution real time monitoring, which is competitive with and

  2. Novel Heterostructure Devices for Ultra-Scaled Logic

    Science.gov (United States)

    Fay, Patrick

    Continuing increases in circuit complexity and capability for logic and computational applications as well as for emerging low-power distributed systems require fundamental advances in device technology and scaling. Dimensional scaling of conventional devices are approaching fundamental limitations. In addition, due to power constraints, devices capable of achieving switching slopes (SS) steeper than 60 mV/decade are essential if conventional computational architectures are to continue scaling. Similarly, low power systems such as distributed sensing applications also benefit from devices capable of delivering high performance in low-voltage operation. Tunneling field effect transistors (TFETs) are one promising alternative to achieve these objectives. A great deal of work has been devoted to realizing TFETs in Si, Ge, and narrow-gap III-V materials, but the use of two-dimensional materials and III-N heterostructures offer unique opportunities. From physics-based simulations, GaN/InGaN/GaN heterostructure TFETs offer the potential for achieving switching slopes approaching 20 mV/decade with on-current densities approaching 1 mA/ μm in nanowire configurations, while recent results in two-dimensional materials have also shown potential for sub-thermionic switching slopes. In this talk, the operational principles of candidate devices for steep switching will be described, and device design and performance considerations will be discussed. In addition, experimental efforts demonstrating these devices will be reviewed, and the future prospects for these and related devices to enable future generations of scaled technologies will be discussed. This work is sponsored in part by LEAST, a funded center of STARnet, a Semiconductor Research Corporation (SRC) program sponsored by MARCO and DARPA.

  3. Spatial Dynamics of Multilayer Cellular Neural Networks

    Science.gov (United States)

    Wu, Shi-Liang; Hsu, Cheng-Hsiung

    2018-02-01

    The purpose of this work is to study the spatial dynamics of one-dimensional multilayer cellular neural networks. We first establish the existence of rightward and leftward spreading speeds of the model. Then we show that the spreading speeds coincide with the minimum wave speeds of the traveling wave fronts in the right and left directions. Moreover, we obtain the asymptotic behavior of the traveling wave fronts when the wave speeds are positive and greater than the spreading speeds. According to the asymptotic behavior and using various kinds of comparison theorems, some front-like entire solutions are constructed by combining the rightward and leftward traveling wave fronts with different speeds and a spatially homogeneous solution of the model. Finally, various qualitative features of such entire solutions are investigated.

  4. Evaluation of Multilayered Waveguide Holographic Memory Media

    Science.gov (United States)

    Ishihara, Kei; Fujiwara, Tsuyoshi; Esaki, Akira

    2004-07-01

    A multilayered waveguide holographic memory media consists of a stack of single-mode slab waveguides. An UV embossing process has been developed for fabricating this structure. This process is suitable for mass production at low cost, but it is has a disadvantage of poor precision in the control of layer thickness and data position. The distribution of the core inclination and the error in data position alignment were checked, and the results showed that this process is sufficiently accurate for fabricating the above media. Also, the durability of the media fabricated by the UV embossing process was tested. The media was preserved under high-temperature and high-humidity conditions (80°C and 85%RH respectively). The results showed that this media has sufficient durability for practical use.

  5. Nanoprocessing of metastable nm-period multilayers

    Science.gov (United States)

    Gorbunov, A. A.; Richter, J.; Pompe, W.

    Nanometer-period nickel-carbon multilayers were used as a medium for the fabrication of nanostructures by gap voltage manipulations in a scanning tunneling microscope. The written metallic structures were stable over at least several weeks. No traces of tip material were found in the processed areas. Two well-distinguished hillock-like nanostructure types were observed depending on the tip-sample separation, polarity and interaction time. Relatively slow local annealing under positive sample potential without a direct tip-sample contact resulted in the formation of nanostructures about 20 nm wide and a few nm high. Rapid melting followed by metal melt extrusion was observed if the tip contacted the sample during the nanostructure formation. These metal-like structures were tens of nm high and had a good electronic contrast to the initial carbon-coated surface. The formation of nanostructures was strongly dependent on the tip condition. Possible mechanisms of nanostructure formation are discussed.

  6. A multilayer surface detector for ultracold neutrons

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zhehui, E-mail: zwang@lanl.gov [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Hoffbauer, M.A.; Morris, C.L. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Callahan, N.B.; Adamek, E.R. [Indiana University, Bloomington, IN 47405 (United States); Bacon, J.D. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Blatnik, M. [Cleveland State University, Cleveland, OH 44115 (United States); Brandt, A.E. [North Carolina State University, Raleigh, NC 27695 (United States); Broussard, L.J.; Clayton, S.M. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Cude-Woods, C. [North Carolina State University, Raleigh, NC 27695 (United States); Currie, S. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Dees, E.B. [North Carolina State University, Raleigh, NC 27695 (United States); Ding, X. [Virginia Polytechnic Institute and State University, Blacksburg, VA 24061 (United States); Gao, J. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Gray, F.E. [Regis University, Denver, CO 80221 (United States); Hickerson, K.P. [University of California Los Angeles, Los Angeles, CA 90095 (United States); Holley, A.T. [Tennessee Technological University, Cookeville, TN 38505 (United States); Ito, T.M. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Liu, C.-Y. [Indiana University, Bloomington, IN 47405 (United States); and others

    2015-10-21

    A multilayer surface detector for ultracold neutrons (UCNs) is described. The top {sup 10}B layer is exposed to vacuum and directly captures UCNs. The ZnS:Ag layer beneath the {sup 10}B layer is a few microns thick, which is sufficient to detect the charged particles from the {sup 10}B(n,α){sup 7}Li neutron-capture reaction, while thin enough that ample light due to α and {sup 7}Li escapes for detection by photomultiplier tubes. A 100-nm thick {sup 10}B layer gives high UCN detection efficiency, as determined by the mean UCN kinetic energy, detector materials, and other parameters. Low background, including negligible sensitivity to ambient neutrons, has also been verified through pulse-shape analysis and comparison with other existing {sup 3}He and {sup 10}B detectors. This type of detector has been configured in different ways for UCN flux monitoring, development of UCN guides and neutron lifetime research.

  7. Plasmon resonance in multilayer graphene nanoribbons

    DEFF Research Database (Denmark)

    Emani, Naresh Kumar; Wang, Di; Chung, Ting Fung

    2015-01-01

    Plasmon resonances in nanopatterned single-layer graphene nanoribbons (SL-GNRs), double-layer graphene nanoribbons (DL-GNRs) and triple-layer graphene nanoribbons (TL-GNRs) are studied experimentally using 'realistic' graphene samples. The existence of electrically tunable plasmons in stacked...... multilayer graphene nanoribbons was first experimentally verified by infrared microscopy. We find that the strength of the plasmonic resonance increases in DL-GNRs when compared to SL-GNRs. However, further increase was not observed in TL-GNRs when compared to DL-GNRs. We carried out systematic full......-wave simulations using a finite-element technique to validate and fit experimental results, and extract the carrier-scattering rate as a fitting parameter. The numerical simulations show remarkable agreement with experiments for an unpatterned SLG sheet, and a qualitative agreement for a patterned graphene sheet...

  8. An ultra-broadband multilayered graphene absorber

    KAUST Repository

    Amin, Muhammad

    2013-01-01

    An ultra-broadband multilayered graphene absorber operating at terahertz (THz) frequencies is proposed. The absorber design makes use of three mechanisms: (i) The graphene layers are asymmetrically patterned to support higher order surface plasmon modes that destructively interfere with the dipolar mode and generate electromagnetically induced absorption. (ii) The patterned graphene layers biased at different gate voltages backedup with dielectric substrates are stacked on top of each other. The resulting absorber is polarization dependent but has an ultra-broadband of operation. (iii) Graphene\\'s damping factor is increased by lowering its electron mobility to 1000cm 2=Vs. Indeed, numerical experiments demonstrate that with only three layers, bandwidth of 90% absorption can be extended upto 7THz, which is drastically larger than only few THz of bandwidth that can be achieved with existing metallic/graphene absorbers. © 2013 Optical Society of America.

  9. Optimisation of Multilayer Insulation an Engineering Approach

    CERN Document Server

    Chorowski, M; Parente, C; Riddone, G

    2001-01-01

    A mathematical model has been developed to describe the heat flux through multilayer insulation (MLI). The total heat flux between the layers is the result of three distinct heat transfer modes: radiation, residual gas conduction and solid spacer conduction. The model describes the MLI behaviour considering a layer-to-layer approach and is based on an electrical analogy, in which the three heat transfer modes are treated as parallel thermal impedances. The values of each of the transfer mode vary from layer to layer, although the total heat flux remains constant across the whole MLI blanket. The model enables the optimisation of the insulation with regard to different MLI parameters, such as residual gas pressure, number of layers and boundary temperatures. The model has been tested with experimental measurements carried out at CERN and the results revealed to be in a good agreement, especially for insulation vacuum between 10-5 Pa and 10-3 Pa.

  10. Multi-layered proton-conducting electrolyte

    Science.gov (United States)

    Lee, Tae H.; Dorris, Stephen E.; Balachandran, Uthamalingam

    2017-06-27

    The present invention provides a multilayer anode/electrolyte assembly comprising a porous anode substrate and a layered solid electrolyte in contact therewith. The layered solid electrolyte includes a first dense layer of yttrium-doped barium zirconate (BZY), optionally including another metal besides Y, Ba, and Zr (e.g., a lanthanide metal such as Pr) on one surface thereof, a second dense layer of yttrium-doped barium cerate (BCY), and an interfacial layer between and contacting the BZY and BCY layers. The interfacial layer comprises a solid solution of the BZY and BCY electrolytes. The porous anode substrate comprises at least one porous ceramic material that is stable to carbon dioxide and water (e.g., porous BZY), as well as an electrically conductive metal and/or metal oxide (e.g., Ni, NiO, and the like).

  11. The mesoscopic modelling of multilayered polymer diodes

    International Nuclear Information System (INIS)

    Ribeiro, Ricardo M.

    2008-01-01

    The performance of transparent devices based on semiconducting polymers depends on the component polymer molecules, on the device design, and on the polymer texture. The role of this texture and multilayers of different textures is the focus of this work. In this work, we build on the approaches described elsewhere to build up a more systematic description of the way texture affects recombination and other processes in simple devices. Our methods do not need major computing power, and could be applied in the optimisation of devices. The results show a clear dependence of the electron-hole recombination rate on the texture of the polymer, which can be used to increase the performance of devices. Also the effect of including a dielectric nanoparticle inside different textures was studied. It was observed that the recombination rate and the charge distribution are influenced by the texture of the polymer, and so can be used to control where the majority of recombinations occur

  12. Multilayer optical disc system using homodyne detection

    Science.gov (United States)

    Kurokawa, Takahiro; Ide, Tatsuro; Tanaka, Yukinobu; Watanabe, Koichi

    2014-09-01

    A write/read system using high-productivity multilayer optical discs was developed. The recording medium used in the system consists of planar recording layers and a separated guide layer, and is fabricated by web coating and lamination process. The recording layers in the medium are made of one-photon-absorption material, on which data can be recorded with a normal laser diode. The developed system is capable of focusing and tracking on the medium and amplifying readout signals by using phase-diversity homodyne detection. A highly layer-selective focusing method using homodyne detection was also proposed. This method obtains stable focus-error signals with clearly separated S-shaped curves even when layer spacing is quite narrow, causing large interlayer crosstalk. Writing on the medium and reading with the signal amplification effect of homodyne detection was demonstrated. In addition, the effectiveness of the method was experimentally evaluated.

  13. Free Vibration of Thick Multilayer Cylinders

    Directory of Open Access Journals (Sweden)

    H. R. Hamidzadeh

    1995-01-01

    Full Text Available In this study of the free vibration of multilayer thick cylinders, the medium is modeled by laminated linear viscoelastic cylinders of an infinite extent. The analytical modeling is based on three-dimensional wave propagation utilizing constant complex elastic moduli. The solution is achieved by determining the displacements and stresses for each interface and by complying with requirements at the interfaces. A propagator matrix relating the boundary displacements to boundary stresses is developed. Dimensionless natural frequencies and modal loss factors for different circumferential and axial wave numbers are determined. The validity of the proposed method is verified by comparing the results for one-, two-, and three-layer elastic cylinders with properties similar to those reported for an equivalent single layer.

  14. Interface stress in Au/Ni multilayers

    DEFF Research Database (Denmark)

    Schweitz, K.O.; Böttiger, J.; Chevallier, J.

    2000-01-01

    The effect of intermixing on the apparent interface stress is studied in -textured dc-magnetron sputtered Au/Ni multilayers by use of two methods commonly used for determining interface stress. The method using profilometry and in-plane x-ray diffraction does not take intermixing...... into account and yields an apparent interface stress of -8.46 +/- 0.99 J m(-2). However, observed discrepancies between model calculations and measured high-angle x-ray diffractograms indicate intermixing, and by use of the profilometry and sin(2) psi method the real interface stress value of -2.69 +/- 0.43 J...... m(-2) is found. This method also reveals a significant and systematic change of the stress-free lattice parameter of both constituents as a function of modulation period which is shown to account for the difference between the two findings. The method using in-plane diffraction is thus shown...

  15. Multilayer Approach for Advanced Hybrid Lithium Battery

    KAUST Repository

    Ming, Jun

    2016-06-06

    Conventional intercalated rechargeable batteries have shown their capacity limit, and the development of an alternative battery system with higher capacity is strongly needed for sustainable electrical vehicles and hand-held devices. Herein, we introduce a feasible and scalable multilayer approach to fabricate a promising hybrid lithium battery with superior capacity and multivoltage plateaus. A sulfur-rich electrode (90 wt % S) is covered by a dual layer of graphite/Li4Ti5O12, where the active materials S and Li4Ti5O12 can both take part in redox reactions and thus deliver a high capacity of 572 mAh gcathode -1 (vs the total mass of electrode) or 1866 mAh gs -1 (vs the mass of sulfur) at 0.1C (with the definition of 1C = 1675 mA gs -1). The battery shows unique voltage platforms at 2.35 and 2.1 V, contributed from S, and 1.55 V from Li4Ti5O12. A high rate capability of 566 mAh gcathode -1 at 0.25C and 376 mAh gcathode -1 at 1C with durable cycle ability over 100 cycles can be achieved. Operando Raman and electron microscope analysis confirm that the graphite/Li4Ti5O12 layer slows the dissolution/migration of polysulfides, thereby giving rise to a higher sulfur utilization and a slower capacity decay. This advanced hybrid battery with a multilayer concept for marrying different voltage plateaus from various electrode materials opens a way of providing tunable capacity and multiple voltage platforms for energy device applications. © 2016 American Chemical Society.

  16. Multilayer motif analysis of brain networks

    Science.gov (United States)

    Battiston, Federico; Nicosia, Vincenzo; Chavez, Mario; Latora, Vito

    2017-04-01

    In the last decade, network science has shed new light both on the structural (anatomical) and on the functional (correlations in the activity) connectivity among the different areas of the human brain. The analysis of brain networks has made possible to detect the central areas of a neural system and to identify its building blocks by looking at overabundant small subgraphs, known as motifs. However, network analysis of the brain has so far mainly focused on anatomical and functional networks as separate entities. The recently developed mathematical framework of multi-layer networks allows us to perform an analysis of the human brain where the structural and functional layers are considered together. In this work, we describe how to classify the subgraphs of a multiplex network, and we extend the motif analysis to networks with an arbitrary number of layers. We then extract multi-layer motifs in brain networks of healthy subjects by considering networks with two layers, anatomical and functional, respectively, obtained from diffusion and functional magnetic resonance imaging. Results indicate that subgraphs in which the presence of a physical connection between brain areas (links at the structural layer) coexists with a non-trivial positive correlation in their activities are statistically overabundant. Finally, we investigate the existence of a reinforcement mechanism between the two layers by looking at how the probability to find a link in one layer depends on the intensity of the connection in the other one. Showing that functional connectivity is non-trivially constrained by the underlying anatomical network, our work contributes to a better understanding of the interplay between the structure and function in the human brain.

  17. Laminated multilayer sheet structure and its utilization

    International Nuclear Information System (INIS)

    Chiba, K.; Itoh, K.; Mitani, Y.; Sobajima, S.; Yonemura, U.

    1980-01-01

    A laminated multilayer sheet structure is described comprising (A) an opaque flexible sheet layer, and (B) a flexible layer laminated on the surface of layer (A) and composed of a transparent thermic ray reflecting layer (B 1 ) bonded to a transparent synthetic resin layer (B 2 ), said layer (B 1 ) being a transparent thermic ray reflecting layer composed of (I) a layer of a metal having a thickness of about 50 to about 600 A, said metal being selected from the group consisting of gold, silver, copper, aluminum and a mixture of alloy of at least two of said metals, and (II) a high refractive substance layer having a thickness of about 50 to about 600 A, of an oxide of titanium derived from a layer of an organic titanium compound of the formula Ti 1 O/sub m/R/sub n/, where R is alkyl of 1-20 carbon atoms, l=1-30, m=4+3(1-1), and n=4+2(1-1), and containing the organic residual moiety of the organic titanium compound, the amount of said organic residual moiety being 0.1 to 30% by weight based on the weight of the high refractive substance layer; or said layer (B 1 ) being a transparent semiconductive layer having a thickness of about 500 to about 5,000 a and being composed of a compound selected from the group consisting of indium oxide, tin oxide, cadmium oxide, antimony oxide, copper iodide, and a mixture of at least two of said compounds. A method is described for heat-insulating a room, which comprises applying to the surface of a floor, wall, ceiling or partition in the room a laminated multilayer sheet structure comprising (A) an opaque flexible sheet layer, and (B) a flexible layer laminated on the surface of layer (A) and composed of a transparent thermic ray reflecting layer (B 1 ) bonded to a transparent synthetic resin layer

  18. Status and limitations of multilayer X-ray interference structures

    International Nuclear Information System (INIS)

    Kortright, J.B.

    1996-01-01

    Trends in the performance of x-ray multilayer interference structures with periods ranging from 9 to 130 (angstrom) are reviewed. Analysis of near-normal incidence reflectance data vs photon energy reveals that the effective interface with σ in a static Debye-Waller model, describing interdiffusion and roughness, decreases as the multilayer period decreases, and reaches a lower limit of roughly 2 (angstrom). Specular reflectance and diffuse scattering from uncoated and multilayer-coated substrates having different roughness suggest that this lower limit results largely from substrate roughness. The increase in interface width with period thus results from increasing roughness of interdiffusion as the layer thickness increases

  19. Processing and characterization of multilayers for energy device fabrication (invited)

    DEFF Research Database (Denmark)

    Kaiser, Andreas; Kiebach, Wolff-Ragnar; Gurauskis, Jonas

    /catalytic layers.  Optical dilatometry has proven to be a powerful and fast tool to optimize the co-sintering of planar, asymmetric multilayers, consisting of a porous support and a dense membrane layer. The monitoring of dimensional changes and distortions in single and multilayers during de-binding and sintering......The performance of asymmetric multilayer structures in solid oxide fuel cells (SOFC)/solid oxide electrolysis cells (SOEC), tubular oxygen transport membranes (OTM) and similar high temperature energy devices is often determined by the ceramic fabrication (for given materials and design). A good...

  20. Multilayer bandpass filter with extended lower and upper stop bands.

    Science.gov (United States)

    Belyaev, B A; Tyurnev, V V

    2015-09-15

    We propose a novel design for a multilayer bandpass filter in which every resonant dielectric layer is separated from adjacent dielectric layers or from the ambient by a nonresonant grating of strip conductors on the layer interface. Here, every grating acts as a mirror with specified transparency. Relative to the conventional multilayer bandpass filter with multilayer dielectric mirrors, the proposed filter has multiply extended stop bands below and above the passband. Additionally, we provide formulas for computing the filter's frequency response. A comparison between the computed frequency responses for the proposed and conventional filters with the same passband is presented.

  1. 3D Printed Multi-layer Microfluidic Devices

    Science.gov (United States)

    Bishop, Nathan; Shirk, Kathryn

    Microfluidic devices are increasingly important to the field of bioanalysis for their ability to quickly process a sample in the microliter and picoliter scale. It has been shown that single-layered microfluidic devices can be produced quickly and inexpensively using a 3D printer, PDMS, and shrinking material. This research will expand these methods to create multi-layered microfluidic devices. This research will focus on two main obstacles when creating multi-layer microfluidic devices: layer alignment, and surface roughness. The development of multilayer microfluidic devices allows for more compact microfluidic chip design. This research was funded by the Shippensburg University Undergraduate Research Grant Program.

  2. Design considerations for energy efficient, resilient, multi-layer networks

    DEFF Research Database (Denmark)

    Fagertun, Anna Manolova; Hansen, Line Pyndt; Ruepp, Sarah Renée

    2016-01-01

    This work investigates different network design considerations with respect to energy-efficiency, under green-field resilient multi-layer network deployment. The problem of energy efficient, reliable multi-layer network design is known to result in different trade-offs between key performance...... in multi-layer networks and performance measures such as network resource utilization, availability, agility to traffic fluctuations and energy consumption. A green-field network deployment scenario is considered, where different resiliency methods, design methodologies and grooming strategies are applied...

  3. A technique for simultaneously improving the product of cutoff frequency-breakdown voltage and thermal stability of SOI SiGe HBT

    Science.gov (United States)

    Fu, Qiang; Zhang, Wan-Rong; Jin, Dong-Yue; Zhao, Yan-Xiao; Wang, Xiao

    2016-12-01

    The product of the cutoff frequency and breakdown voltage (fT×BVCEO) is an important figure of merit (FOM) to characterize overall performance of heterojunction bipolar transistor (HBT). In this paper, an approach to introducing a thin N+-buried layer into N collector region in silicon-on-insulator (SOI) SiGe HBT to simultaneously improve the FOM of fT×BVCEO and thermal stability is presented by using two-dimensional (2D) numerical simulation through SILVACO device simulator. Firstly, in order to show some disadvantages of the introduction of SOI structure, the effects of SOI insulation layer thickness (TBOX) on fT, BVCEO, and the FOM of fT×BVCEO are presented. The introduction of SOI structure remarkably reduces the electron concentration in collector region near SOI substrate insulation layer, obviously reduces fT, slightly increases BVCEO to some extent, but ultimately degrades the FOM of fT×BVCEO. Although the fT, BVCEO, and the FOM of fT×BVCEO can be improved by increasing SOI insulator SiO2 layer thickness TBOX in SOI structure, the device temperature and collector current are increased due to lower thermal conductivity of SiO2 layer, as a result, the self-heating effect of the device is enhanced, and the thermal stability of the device is degraded. Secondly, in order to alleviate the foregoing problem of low electron concentration in collector region near SOI insulation layer and the thermal stability resulting from thick TBOX, a thin N+-buried layer is introduced into collector region to not only improve the FOM of fT×BVCEO, but also weaken the self-heating effect of the device, thus improving the thermal stability of the device. Furthermore, the effect of the location of the thin N+-buried layer in collector region is investigated in detail. The result show that the FOM of fT×BVCEO is improved and the device temperature decreases as the N+-buried layer shifts toward SOI substrate insulation layer. The approach to introducing a thin N+-buried layer

  4. A technique for simultaneously improving the product of cutoff frequency–breakdown voltage and thermal stability of SOI SiGe HBT

    International Nuclear Information System (INIS)

    Fu Qiang; Zhang Wan-Rong; Jin Dong-Yue; Zhao Yan-Xiao; Wang Xiao

    2016-01-01

    The product of the cutoff frequency and breakdown voltage ( f T ×BV CEO ) is an important figure of merit (FOM) to characterize overall performance of heterojunction bipolar transistor (HBT). In this paper, an approach to introducing a thin N + -buried layer into N collector region in silicon-on-insulator (SOI) SiGe HBT to simultaneously improve the FOM of f T ×BV CEO and thermal stability is presented by using two-dimensional (2D) numerical simulation through SILVACO device simulator. Firstly, in order to show some disadvantages of the introduction of SOI structure, the effects of SOI insulation layer thickness ( T BOX ) on f T , BV CEO , and the FOM of f T ×BV CEO are presented. The introduction of SOI structure remarkably reduces the electron concentration in collector region near SOI substrate insulation layer, obviously reduces f T , slightly increases BV CEO to some extent, but ultimately degrades the FOM of f T ×BV CEO . Although the f T , BV CEO , and the FOM of f T ×BV CEO can be improved by increasing SOI insulator SiO 2 layer thickness T BOX in SOI structure, the device temperature and collector current are increased due to lower thermal conductivity of SiO 2 layer, as a result, the self-heating effect of the device is enhanced, and the thermal stability of the device is degraded. Secondly, in order to alleviate the foregoing problem of low electron concentration in collector region near SOI insulation layer and the thermal stability resulting from thick T BOX , a thin N + -buried layer is introduced into collector region to not only improve the FOM of f T ×BV CEO , but also weaken the self-heating effect of the device, thus improving the thermal stability of the device. Furthermore, the effect of the location of the thin N + -buried layer in collector region is investigated in detail. The result show that the FOM of f T ×BV CEO is improved and the device temperature decreases as the N + -buried layer shifts toward SOI substrate insulation layer

  5. Enhancement of ferromagnetism in BaFeO{sub 3}-KTa{sub 0.47}Nb{sub 0.53}O{sub 3} multilayers compared to pseudo-cubic BaFeO{sub 3} thin film grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cianfrone, Joe; Kim, Seonhoo; Kim, Kyeong-Won; Norton, David [Department of Materials Science and Engineering, University of Florida, Gainesville, FL (United States); Ghosh, Siddhartha; Hebard, Arthur F. [Department of Physics, University of Florida, Gainesville, FL (United States)

    2017-06-15

    Oxide multilayer hetero-structure of BaFeO{sub 3}-KTa{sub 0.47}Nb{sub 0.53}O{sub 3} have been grown using the pulsed laser deposition and the ex situ annealed in a flowing oxygen atmosphere. The multilayer has been characterized using X-ray diffraction, transmission electron microscopy, and X-ray photoelectron spectroscopy. Magnetic properties have been studied via SQUID measurements. Magnetization in the multilayer structure shows significant improvement compared to previous measurements of bare BaFeO{sub 3}. Measuring magnetization as a function of temperature and fitting the resulting M-T curves to Bloch's 3/2 law, yields an estimated Curie temperature (T{sub C}) of around 425 K and a P factor of around 1.5, consistent with magnetization from a three dimensional crystal structure. In spite of using a room temperature ferroelectric KTa{sub 0.47}Nb{sub 0.53}O{sub 3} composition, no evidence of ferroelectricity was observed in multi-layer structure. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Rapid Construction of ZnO@ZIF-8 Heterostructures with Size-Selective Photocatalysis Properties.

    Science.gov (United States)

    Wang, Xianbiao; Liu, Jin; Leong, Sookwan; Lin, Xiaocheng; Wei, Jing; Kong, Biao; Xu, Yongfei; Low, Ze-Xian; Yao, Jianfeng; Wang, Huanting

    2016-04-13

    To selectively remove heavy metal from dye solution, inspired by the unique pore structure of ZIF-8, we developed a synthetic strategy for rapid construction of ZnO@ZIF-8 heterostructure photocatalyst for selective reduction of Cr(VI) between Cr(VI) and methylene blue (MB). In particular, ZnO@ZIF-8 core-shell heterostructures were prepared by in situ ZIF-8 crystal growth using ZnO colloidal spheres as template and zinc source within 8-60 min. The shell of the resulting ZnO@ZIF-8 core-shell heterostructure with a uniform thickness of around 30 nm is composed of ZIF-8 crystal polyhedrons. The concentration of organic ligand 2-methylimidazole (Hmim) was found to be crucial for the formation of ZnO@ZIF-8 core-shell heterostructures. Different structures, ZnO@ZIF-8 core-shell spheres and separate ZIF-8 polyhedrons could be formed by altering Hmim concentration, which significantly influences the balance between rate of Zn(2+) release from ZnO and coordinate rate. Importantly, such ZnO@ZIF-8 core-shell heterostructures exhibit size-selective photocatalysis properties due to selective adsorption and permeation effect of ZIF-8 shell. The as-synthesized ZnO@ZIF-8 heterostructures exhibited enhanced selective reduction of Cr(VI) between Cr(VI) and MB, which may find application in the dye industry. This work not only provides a general route for rapid fabrication of such core-shell heterostructures but also illustrates a strategy for selectively enhanced photocatalysis performance by utilizing adsorption and size selectivity of ZIF-8 shell.

  7. Resistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by in-situ TEM.

    Science.gov (United States)

    Zhang, Lei; Zhu, Liang; Li, Xiaomei; Xu, Zhi; Wang, Wenlong; Bai, Xuedong

    2017-03-21

    One diode-one resistor (1D1R) memory is an effective architecture to suppress the crosstalk interference, realizing the crossbar network integration of resistive random access memory (RRAM). Herein, we designed a p + -Si/n-ZnO heterostructure with 1D1R function. Compared with the conventional multilayer 1D1R devices, the structure and fabrication technique can be largely simplified. The real-time imaging of formation/rupture process of conductive filament (CF) process demonstrated the RS mechanism by in-situ transmission electron microscopy (TEM). Meanwhile, we observed that the formed CF is only confined to the outside of depletion region of Si/ZnO pn junction, and the formation of CF does not degrade the diode performance, which allows the coexistence of RS and rectifying behaviors, revealing the 1D1R switching model. Furthermore, it has been confirmed that the CF is consisting of the oxygen vacancy by in-situ TEM characterization.

  8. Resistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by in-situ TEM

    Science.gov (United States)

    Zhang, Lei; Zhu, Liang; Li, Xiaomei; Xu, Zhi; Wang, Wenlong; Bai, Xuedong

    2017-03-01

    One diode-one resistor (1D1R) memory is an effective architecture to suppress the crosstalk interference, realizing the crossbar network integration of resistive random access memory (RRAM). Herein, we designed a p+-Si/n-ZnO heterostructure with 1D1R function. Compared with the conventional multilayer 1D1R devices, the structure and fabrication technique can be largely simplified. The real-time imaging of formation/rupture process of conductive filament (CF) process demonstrated the RS mechanism by in-situ transmission electron microscopy (TEM). Meanwhile, we observed that the formed CF is only confined to the outside of depletion region of Si/ZnO pn junction, and the formation of CF does not degrade the diode performance, which allows the coexistence of RS and rectifying behaviors, revealing the 1D1R switching model. Furthermore, it has been confirmed that the CF is consisting of the oxygen vacancy by in-situ TEM characterization.

  9. Determination of defect content and defect profile in semiconductor heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Zubiaga, A [Laboratory of Physics, HUT, PO Box 1100, 02015 TKK, Espoo (Finland); Garcia, J A; Plazaola, F [Zientzia eta Teknologia Fakultatea, Euskal Herriko Unbertsitatea, P. K. 644, 48080, Bilbao (Spain); Zuniga-Perez, J; Munoz-Sanjose, V, E-mail: fernando.plazaola@ehu.es [Universitat de Valencia, Departamento de Fisica Aplicada i Electromagnetisme, Dr. Moliner 50, 46100 Burjassot, Valencia (Spain)

    2011-01-10

    In this article we present an overview of the technique to obtain the defects depth profile and width of a deposited layer and multilayer based on positron annihilation spectroscopy. In particular we apply the method to ZnO and ZnO/ZnCdO layers deposited on sapphire substrates. After introducing some terminology we first calculate the trend that the W/S parameters of the Doppler broadening measurements must follow, both in a qualitative and quantitative way. From this point we extend the results to calculate the width and defect profiles in deposited layer samples.

  10. Coupling and manipulation of edge states in multilayer phosphorene nanoribbons

    Science.gov (United States)

    Lv, Z. T.; Gao, J. H.; Zhang, X. D.; Jiang, Z. T.

    2017-10-01

    We investigate the couplings among the edge states of the normal zigzag and skewed armchair multilayer phosphorene nanoribbons, as well as the effect of the electric field on the corresponding energy levels, by using the tight-binding Hamiltonian approach. It is found that there appear different transitions from the coupled to uncoupled edge states in the normal zigzag and skewed armchair nanoribbons with the increasing of the nanoribbon width, which is fundamentally attributed to the edge asymmetry of the multilayer phosphorene nanoribbons. Moreover, the energy bands of the multilayer phosphorene nanoribbons can be effectively adjusted by applying the perpendicular electric field. Therefore, this research should be thought of as a useful reference for determining the width, the edge types, and the layer numbers of the nanoribbons in manipulating the properties of the multilayer phosphorene nanoribbons.

  11. Material optimization of multi-layered enhanced nanostructures

    Science.gov (United States)

    Strobbia, Pietro

    The employment of surface enhanced Raman scattering (SERS)-based sensing in real-world scenarios will offer numerous advantages over current optical sensors. Examples of these advantages are the intrinsic and simultaneous detection of multiple analytes, among many others. To achieve such a goal, SERS substrates with throughput and reproducibility comparable to commonly used fluorescence sensors have to be developed. To this end, our lab has discovered a multi-layer geometry, based on alternating films of a metal and a dielectric, that amplifies the SERS signal (multi-layer enhancement). The advantage of these multi-layered structures is to amplify the SERS signal exploiting layer-to-layer interactions in the volume of the structures, rather than on its surface. This strategy permits an amplification of the signal without modifying the surface characteristics of a substrate, and therefore conserving its reproducibility. Multi-layered structures can therefore be used to amplify the sensitivity and throughput of potentially any previously developed SERS sensor. In this thesis, these multi-layered structures were optimized and applied to different SERS substrates. The role of the dielectric spacer layer in the multi-layer enhancement was elucidated by fabricating spacers with different characteristics and studying their effect on the overall enhancement. Thickness, surface coverage and physical properties of the spacer were studied. Additionally, the multi-layered structures were applied to commercial SERS substrates and to isolated SERS probes. Studies on the dependence of the multi-layer enhancement on the thickness of the spacer demonstrated that the enhancement increases as a function of surface coverage at sub-monolayer thicknesses, due to the increasing multi-layer nature of the substrates. For fully coalescent spacers the enhancement decreases as a function of thickness, due to the loss of interaction between proximal metallic films. The influence of the

  12. Multi-layer protective armour for underwater shock wave mitigation

    Directory of Open Access Journals (Sweden)

    Ahmed Hawass

    2015-12-01

    The strain gauge data and displacement sensors results showed that the multi-layer plates have higher level of underwater shock wave mitigation than the triple aluminum plates with strain and deflection of nearly 50%.

  13. Multi-layer Far-Infrared Component Technology Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This Phase I SBIR will demonstrate the feasibility of a process to create multi-layer thin-film optics for the far-infrared/sub-millimeter wave spectral region. The...

  14. Gadolinium EUV Multilayers for Solar Imaging Near 60 nm Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to develop and commercialize a new class of extreme ultraviolet (EUV) multilayer coatings containing the rare-earth element gadolinium (Gd), designed as...

  15. Characterization of Mo/Si multilayer growth on stepped topographies

    Energy Technology Data Exchange (ETDEWEB)

    Boogaard, A. J. R. vcan den; Louis, E.; Zoethout, E.; Goldberg, K. A.; Bijkerk, F.

    2011-08-31

    Mo/Si multilayer mirrors with nanoscale bilayer thicknesses have been deposited on stepped substrate topographies, using various deposition angles. The multilayer morphology at the stepedge region was studied by cross section transmission electron microscopy. A transition from a continuous- to columnar layer morphology is observed near the step-edge, as a function of the local angle of incidence of the deposition flux. Taking into account the corresponding kinetics and anisotropy in layer growth, a continuum model has been developed to give a detailed description of the height profiles of the individual continuous layers. Complementary optical characterization of the multilayer system using a microscope operating in the extreme ultraviolet wavelength range, revealed that the influence of the step-edge on the planar multilayer structure is restricted to a region within 300 nm from the step-edge.

  16. Robots for Field Operations with Comprehensive Multilayer Control

    DEFF Research Database (Denmark)

    Jæger, Claes Lund Dühring; Griepentrog, H. W.; Paraforos, D. S.

    2013-01-01

    artificial intelligence. A multilayer controller has successfully been implemented on two outdoor machines with various implements to conduct several agricultural applications in autonomous mode. Future work has to be conducted to achieve a more integrated and flexible implement control....

  17. Molecular mobility and transport in polymer membranes and polyelectrolyte multilayers.

    Science.gov (United States)

    Sagidullin, Alexandr; Meier-Haack, Jochen; Scheler, Ulrich

    2007-05-01

    Polyelectrolyte multilayers prepared by the layer-by-layer technique provide an efficient way to generate planar structures of tailored surface charge and hydrophobicity, which are used as membranes for pervaporation. The use of polyelectrolyte multilayers to form the membrane permits tailoring the surface charge of the membrane and, thus, selectivity; at the same time, it reduces fouling of the membrane by adsorption of organic matter. Pulsed field gradient (PFG) nuclear magnetic resonance has been used to investigate the diffusion of probe molecules into polymer systems. Evaluation of the apparent diffusion coefficient in porous poly(amide) results in a pore size of 4 microm, as found in electron micrographs. For the pore size obtained for polyelectrolyte multilayers, no equivalent pores could be found in microscopy. Propagators for the diffusion of propanol and propanol-water mixture into multilayers reveal that there might be selective interaction of probe molecules with the polyelectrolyte system.

  18. Finite-width plasmonic waveguides with hyperbolic multilayer cladding

    DEFF Research Database (Denmark)

    Babicheva, Viktoriia; Shalaginov, Mikhail Y.; Ishii, Satoshi

    2015-01-01

    Engineering plasmonic metamaterials with anisotropic optical dispersion enables us to tailor the properties of metamaterial-based waveguides. We investigate plasmonic waveguides with dielectric cores and multilayer metal-dielectric claddings with hyperbolic dispersion. Without using any homogeniz...

  19. Multi-layer Far-Infrared Component Technology, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This Phase I SBIR will demonstrate the feasibility of a process to create multi-layer thin-film optics for the far-infrared/sub-millimeter wave spectral region. The...

  20. Near-field heat transfer between multilayer hyperbolic metamaterials

    Energy Technology Data Exchange (ETDEWEB)

    Biehs, Svend-Age [Oldenburg Univ. (Germany). Inst. fuer Physik; Ben-Abdallah, Philippe [Univ. Paris-Sud 11, Palaiseau (France). Lab. Charles Fabry; Univ. Sherbrooke, PQ (Canada). Dept. of Mechanical Engineering

    2017-05-01

    We review the near-field radiative heat flux between hyperbolic materials focusing on multilayer hyperbolic meta-materials. We discuss the formation of the hyperbolic bands, the impact of ordering of the multilayer slabs, as well as the impact of the first single layer on the heat transfer. Furthermore, we compare the contribution of surface modes to that of hyperbolic modes. Finally, we also compare the exact results with predictions from effective medium theory.