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Sample records for sige alloy deposited

  1. Tetrasilane and digermane for the ultra-high vacuum chemical vapor deposition of SiGe alloys

    Hart, John; Hazbun, Ramsey; Eldridge, David; Hickey, Ryan; Fernando, Nalin; Adam, Thomas; Zollner, Stefan; Kolodzey, James

    2016-01-01

    Tetrasilane and digermane were used to grow epitaxial silicon germanium layers on silicon substrates in a commercial ultra-high vacuum chemical vapor deposition tool. Films with concentrations up to 19% germanium were grown at temperatures from 400 °C to 550 °C. For all alloy compositions, the growth rates were much higher compared to using mono-silane and mono-germane. The quality of the material was assessed using X-ray diffraction, atomic force microscopy, and spectroscopic ellipsometry; all indicating high quality epitaxial films with low surface roughness suitable for commercial applications. Studies of the decomposition kinetics with regard to temperature were performed, revealing an unusual growth rate maximum between the high and low temperature deposition regimes. - Highlights: • Higher order precursors tetrasilane and digermane • Low temperature deposition • Thorough film characterization with temperature • Arrhenius growth rate peak

  2. Efficient tunable luminescence of SiGe alloy sheet polymers

    Vogg, G.; Meyer, A. J.-P.; Miesner, C.; Brandt, M. S.; Stutzmann, M.

    2001-01-01

    Crystalline SiGe alloy sheet polymers were topotactically prepared from epitaxially grown calcium germanosilicide Ca(Si 1-x Ge x ) 2 precursor films in the whole composition range. These polygermanosilynes are found to be a well-defined mixture of the known siloxene and polygermyne sheet polymers with the OH groups exclusively bonded to silicon. The optical properties determined by photoluminescence and optical reflection measurements identify the mixed SiGe sheet polymers as direct semiconductors with efficient luminescence tunable in the energy range between 2.4 and 1.3 eV. [copyright] 2001 American Institute of Physics

  3. Phosphorus atomic layer doping in SiGe using reduced pressure chemical vapor deposition

    Yamamoto, Yuji; Heinemann, Bernd; Murota, Junichi; Tillack, Bernd

    2014-01-01

    Phosphorus (P) atomic layer doping in SiGe is investigated at temperatures between 100 °C to 600 °C using a single wafer reduced pressure chemical vapor deposition system. SiGe(100) surface is exposed to PH 3 at different PH 3 partial pressures by interrupting SiGe growth. The impact of the SiGe buffer/cap growth condition (total pressure/SiGe deposition precursors) on P adsorption, incorporation, and segregation are investigated. In the case of SiH 4 -GeH 4 -H 2 gas system, steeper P spikes due to lower segregation are observed by SiGe cap deposition at atmospheric (ATM) pressure compared with reduced pressure (RP). The steepness of P spike of ∼ 5.7 nm/dec is obtained for ATM pressure without reducing deposition temperature. This result may be due to the shift of equilibrium of P adsorption/desorption to desorption direction by higher H 2 pressure. Using Si 2 H 6 -GeH 4 -H 2 gas system for SiGe cap deposition in RP, lowering the SiGe growth temperature is possible, resulting in higher P incorporation and steeper P profile due to reduced desorption and segregation. In the case of Si 2 H 6 -GeH 4 -H 2 gas system, the P dose could be simulated assuming a Langmuir-type kinetics model. Incorporated P shows high electrical activity, indicating P is adsorbed mostly in lattice position. - Highlights: • Phosphorus (P) atomic layer doping in SiGe (100) is investigated using CVD. • P adsorption is suppressed by the hydrogen termination of Ge surface. • By SiGe cap deposition at atmospheric pressure, P segregation was suppressed. • By using Si 2 H 6 -based SiGe cap, P segregation was also suppressed. • The P adsorption process is self-limited and follows Langmuir-type kinetics model

  4. Reduction in the formation temperature of Poly-SiGe alloy thin film in Si/Ge system

    Tah, Twisha; Singh, Ch. Kishan; Madapu, K. K.; Sarguna, R. M.; Magudapathy, P.; Ilango, S.

    2018-04-01

    The role of deposition temperature in the formation of poly-SiGe alloy thin film in Si/Ge system is reported. For the set ofsamples deposited without any intentional heating, initiation of alloying starts upon post annealingat ˜ 500 °C leading to the formation of a-SiGe. Subsequently, poly-SiGe alloy phase could formonly at temperature ≥ 800 °C. Whereas, for the set of samples deposited at 500 °C, in-situ formation of poly-SiGe alloy thin film could be observed. The energetics of the incoming evaporated atoms and theirsubsequent diffusionsin the presence of the supplied thermal energy is discussed to understand possible reasons for lowering of formation temperature/energyof the poly-SiGe phase.

  5. Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering.

    Ke, S Y; Yang, J; Qiu, F; Wang, Z Q; Wang, C; Yang, Y

    2015-11-06

    We discuss the SiGe island co-sputtering deposition on a microcrystalline silicon (μc-Si) buffer layer and the secondary island growth based on this pre-SiGe island layer. The growth phenomenon of SiGe islands on crystalline silicon (c-Si) is also investigated for comparison. The pre-SiGe layer grown on μc-Si exhibits a mixed-phase structure, including SiGe islands and amorphous SiGe (a-SiGe) alloy, while the layer deposited on c-Si shows a single-phase island structure. The preferential growth and Ostwald ripening growth are shown to be the secondary growth mechanism of SiGe islands on μc-Si and c-Si, respectively. This difference may result from the effect of amorphous phase Si (AP-Si) in μc-Si on the island growth. In addition, the Si-Ge intermixing behavior of the secondary-grown islands on μc-Si is interpreted by constructing the model of lateral atomic migration, while this behavior on c-Si is ascribed to traditional uphill atomic diffusion. It is found that the aspect ratios of the preferential-grown super islands are higher than those of the Ostwald-ripening ones. The lower lateral growth rate of super islands due to the lower surface energy of AP-Si on the μc-Si buffer layer for the non-wetting of Ge at 700 °C and the stronger Si-Ge intermixing effect at 730 °C may be responsible for this aspect ratio difference.

  6. Diffusion of $^{56}$Co in GaAs and SiGe alloys

    Koskelo, O K

    2007-01-01

    Following our previous diffusion studies performed with the modified radiotracer technique, we propose to determine the diffusion of cobalt in GaAs and SiGe alloys under intrinsic conditions. In the literature only three previous studies for Co diffusion in GaAs may be found and the results differ by over four orders of magnitude from each other. For Co diffusion in SiGe alloys no previous data is available in the literature. For Co diffusion in Ge one study may be found but the results have been obtained with material having increased dislocation density. For dislocation-free material no previous measurements are available. For such experiments we ask for two runs of 3 shifts (total of 6 shifts) with $^{56}$Co$^{+}$ ion beam.

  7. Influence of alloy disorder scattering on the hole mobility of SiGe nanowires

    Martinez-Blanque, Celso; Ruiz, Francisco G., E-mail: franruiz@ugr.es; Godoy, Andres, E-mail: agodoy@ugr.es; Marin, Enrique G.; Donetti, Luca; Gámiz, Francisco [Dpto. de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, Av. Fuentenueva S/N, 18071 Granada (Spain)

    2014-12-28

    In this work, we analyze the influence of the alloy disorder (AD) scattering on the low-field hole mobility of Si{sub 1-x}Ge{sub x} nanowires (NWs). To do it, the electrostatic description is achieved through a self-consistent solution of the Poisson equation and the six-band k⋅p method in the cross section of the NW. The momentum relaxation time approximation is used to calculate the hole mobility, including alloy disorder and phonon scattering mechanisms, and the use of approximations to calculate the overlap integrals for the scattering matrix elements is discussed. We study the influence of the alloy disorder scattering on the total mobility compared to the phonon contribution, for different values of the AD scattering parameter proposed in the literature, and analyze the performance of SiGe NWs as a function of the Ge molar fraction for both low and high inversion charge densities.

  8. Extended x-ray absorption fine structure studies of amorphous and crystalline Si-Ge alloys with synchrotron radiation

    Kajiyama, Hiroshi

    1988-01-01

    Extended X-ray absorption fine structure (EXAFS) is a powerful probe to study the local structure around the atom of a specific element. In conventional EXAFS analysis, it has been known that reliable structures are obtained with the different values of absorption edge energy for different neighboring atoms. It is shown in this study that the Ge-K edge EXAFS resulting from the Ge-Ge and Ge-Si bonds in hydrogenated amorphous Si-Ge alloys was able to be excellently explained by a unique absorption edge energy value, provided that a newly developed formula based on the spherical wave function of photoelectrons is used. The microscopic structures of hydrogenated amorphous Si-Ge alloys and crystalline Si-Ge alloys have been determined using the EXAFS method. The lengths of Ge-Ge and Ge-Si bonds were constant throughout their entire composition range, and it was found that the length of Ge-Si bond was close to the average value of the bond lengths of both Ge and Si crystals. In crystalline Si-Ge alloys, it has been shown that the bonds relaxed completely, while the lattice constant varied monotonously with the composition. (Kako, I.)

  9. High-aspect-ratio and high-flatness Cu3(SiGe) nanoplatelets prepared by chemical vapor deposition.

    Klementová, Mariana; Palatinus, Lukás; Novotný, Filip; Fajgar, Radek; Subrt, Jan; Drínek, Vladislav

    2013-06-01

    Cu3(SiGe) nanoplatelets were synthesized by low-pressure chemical vapor deposition of a SiH3C2H5/Ge2(CH3)6 mixture on a Cu-substrate at 500 degrees C, total pressure of 110-115 Pa, and Ge/Si molar ratio of 22. The nanoplatelets with composition Cu76Si15Ge12 are formed by the 4'-phase, and they are flattened perpendicular to the [001] direction. Their lateral dimensions reach several tens of micrometers in size, but they are only about 50 nm thick. Their surface is extremely flat, with measured root mean square roughness R(q) below 0.2 nm. The nanoplatelets grow via the non-catalytic vapor-solid mechanism and surface growth. In addition, nanowires and nanorods of various Cu-Si-Ge alloys were also obtained depending on the experimental conditions. Morphology of the resulting Cu-Si-Ge nanoobjects is very sensitive to the experimental parameters. The formation of nanoplatelets is associated with increased amount of Ge in the alloy.

  10. Silicon-germanium (Sige) nanostructures production, properties and applications in electronics

    Usami, N

    2011-01-01

    Nanostructured silicon-germanium (SiGe) provides the prospect of novel and enhanced electronic device performance. This book reviews the materials science and technology of SiGe nanostructures, including crystal growth, fabrication of nanostructures, material properties and applications in electronics.$bNanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and mo...

  11. Thermal conductivity of nanocrystalline SiGe alloys using molecular dynamics simulations

    Abs da Cruz, Carolina; Katcho, Nebil A.; Mingo, Natalio; Veiga, Roberto G. A.

    2013-10-01

    We have studied the effect of nanocrystalline microstructure on the thermal conductivity of SiGe alloys using molecular dynamics simulations. Nanograins are modeled using both the coincidence site lattice and the Voronoi tessellation methods, and the thermal conductivity is computed using the Green-Kubo formalism. We analyze the dependence of the thermal conductivity with temperature, grain size L, and misorientation angle. We find a power dependence of L1/4 of the thermal conductivity with the grain size, instead of the linear dependence shown by non-alloyed nanograined systems. This dependence can be derived analytically underlines the important role that disorder scattering plays even when the grains are of the order of a few nm. This is in contrast to non-alloyed systems, where phonon transport is governed mainly by the boundary scattering. The temperature dependence is weak, in agreement with experimental measurements. The effect of angle misorientation is also small, which stresses the main role played by the disorder scattering.

  12. Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

    Zhang, L; Guo, Y; Hassan, VV; Tang, K; Foad, MA; Woicik, JC; Pianetta, P; Robertson, John; McIntyre, PC

    2016-01-01

    Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging topic due to the complexity arising from the coexistence of Si and Ge interfacial oxides. Defective high-k/SiGe interfaces limit future applications of SiGe as a channel material for electronic devices. In this paper, we identify the surface layer structure of as-received SiGe and Al2O3/SiGe structures based on soft and hard X-ray photoelectron spectroscopy. As-received SiGe substrates have native Si...

  13. Reduced thermal conductivity due to scattering centers in p-type SiGe alloys

    Beaty, J.S.; Rolfe, J.L.; Vandersande, J.; Fleurial. J.P.

    1992-01-01

    This paper reports that a theoretical model has been developed that predicts that the addition of ultra-fine, inert, phonon-scattering centers to SiGe thermoelectric material will reduce its thermal conductivity and improve its figure-of-merit. To investigate this prediction, ultra-fine particulates (20 Angstrom to 200 Angstrom) of boron nitride have been added to boron doped, p-type, 80/20 SiGe. All previous SiGe samples produced from ultra-fine SiGe powder without additions had lower thermal conductivities than standard SiGe, but high temperature (1525 K) heat treatment increased their thermal conductivity back to the value for standard SiGe. Transmission Electron Microscopy has been used to confirm the presence of occluded particulates and X-ray diffraction has been used to determine the composition to be BN

  14. Influence of irradiation on mechanical properties of Si-Ge alloys

    Sichinava, Avtandil; Bokuchava, Guram; Chubinidze, Giorgi; Archuadze, Giorgi [Ilia Vekua Sukhumi Institute of Physics and Technology, Tbilisi (Georgia); Gapishvili, Nodar [Ilia Vekua Sukhumi Institute of Physics and Technology, Tbilisi (Georgia); Georgian Technical University, Tbilisi (Georgia)

    2017-07-15

    Impact of various irradiation (Ar and He ions, high energy electrons) on microhardness and indentation of monocrystalline Si{sub 0,98}Ge{sub 0,02} alloy is studied. Samples of Si and SiGe alloy are obtained by Czochralski (CZ) method in the [111] direction in the atmosphere of high purity Ar. High energy electron irradiation with fluence of ∝10{sup 12} cm{sup -2} is conducted at the Clinac 2100iX. Ar and He ion implantation is performed on modernized ''VEZUVI-3M'' plant. It is shown that for all types of irradiation the microhardness and indentation modulus versus load are characterized by reverse indentation size effect (ISE). With the increase of fluences of Ar and He ions, the maximum value of the effect increases. At high values of loading force impact on the indenter the mechanical characteristics slowly decrease. Impact of isochronous thermal annealing on mechanical properties of high energy electron irradiated samples is studied. Non-monotonic changes of microhardness and indentation modulus are revealed in the temperature range of 200-260 C. It is proposed that such changes are caused by radiation defects transformation. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Diffusion Mechanisms and Lattice Locations of Thermal-Equilibrium Defects in Si-Ge Alloys

    Lyutovich, K; Touboltsev, V; Laitinen, P O; Strohm, A

    2002-01-01

    It is generally accepted that Ge and Si differ considerably with respect to intrinsic-point-defect-mediated diffusion. In Ge, the native point defects dominating under thermal-equilibium conditions at all solid-state temperatures accessible in diffusion experiments are vacancies, and therefore Ge self-diffusion is vacancy-controlled. In Si, by contrast, self-interstitials and vacancies co-exist in thermal equilibrium. Whereas in the most thoroughly investigated temperature regime above about 1000$^\\circ$C Si self-diffusion is self-interstitial-controlled, it is vacancy-controlled at lower temperatures. According to the scenario displayed above, self-diffusion in Si-Ge alloys is expected to change from an interstitialcy mechanism on the Si side to a vacancy mechanism on the Ge side. Therefore, $^{71}$Ge self-diffusion experiments in Si$_{1- \\it y}$Ge$_{\\it y}$ as a function of composition Y are highly interesting. In a first series of experiments the diffusion of Ge in 0.4 to 10 $\\mu$m thick, relaxed, low-disl...

  16. Effect of Synthesis Procedure on Thermoelectric Property of SiGe Alloy

    Li, Jing; Han, Jun; Jiang, Tao; Luo, Lili; Xiang, Yongchun

    2018-05-01

    SiGe thermoelectric material has been synthesized by ball milling combined with hot pressing (HP) or spark plasma sintering (SPS). Effects of ball milling time, powder to ball weight ratio and sintering method on microstructure and thermoelectric properties of SiGe are studied. The results show that longer ball milling time leads to decreased density and worse electrical properties. In the sintering process, SPS results in much larger density and better electrical properties than HP. The Si0.795Ge0.2B0.005 sample prepared by 2 h ball milling combined with SPS obtains a maximum power factor of 3.0 mW m-1 K-2 at 860 K and ZT of 0.95 at 1000 K.

  17. Imparting passivity to vapor deposited magnesium alloys

    Wolfe, Ryan C.

    Magnesium has the lowest density of all structural metals. Utilization of low density materials is advantageous from a design standpoint, because lower weight translates into improved performance of engineered products (i.e., notebook computers are more portable, vehicles achieve better gas mileage, and aircraft can carry more payload). Despite their low density and high strength to weight ratio, however, the widespread implementation of magnesium alloys is currently hindered by their relatively poor corrosion resistance. The objective of this research dissertation is to develop a scientific basis for the creation of a corrosion resistant magnesium alloy. The corrosion resistance of magnesium alloys is affected by several interrelated factors. Among these are alloying, microstructure, impurities, galvanic corrosion effects, and service conditions, among others. Alloying and modification of the microstructure are primary approaches to controlling corrosion. Furthermore, nonequilibrium alloying of magnesium via physical vapor deposition allows for the formation of single-phase magnesium alloys with supersaturated concentrations of passivity-enhancing elements. The microstructure and surface morphology is also modifiable during physical vapor deposition through the variation of evaporation power, pressure, temperature, ion bombardment, and the source-to-substrate distance. Aluminum, titanium, yttrium, and zirconium were initially chosen as candidates likely to impart passivity on vapor deposited magnesium alloys. Prior to this research, alloys of this type have never before been produced, much less studied. All of these metals were observed to afford some degree of corrosion resistance to magnesium. Due to the especially promising results from nonequilibrium alloying of magnesium with yttrium and titanium, the ternary magnesium-yttrium-titanium system was investigated in depth. While all of the alloys are lustrous, surface morphology is observed under the scanning

  18. $^{31}$Si Self-Diffusion in Si-Ge Alloys and Si-(B-)C-N Ceramics and Diffusion Studies for Al and Si Beam Developments

    Nylandsted larsen, A; Voss, T L; Strohm, A

    2002-01-01

    An invaluable method for studying diffusion in solids is the radiotracer technique. However, its applicability had been restricted to radiotracer atoms with half-lives $t_{1/2}$ of about 1~d or longer. Within the framework of IS372 a facility was developed in which short-lived radiotracer atoms ( 5min $\\scriptstyle{\\lesssim}$ $t_{1/2}\\scriptstyle{\\lesssim}$1 d ) can be used. For the implantation of the short-lived tracers the facility is flanged to the ISOLDE beamline, and all post-implantation steps required in the radiotracer technique are done in situ.\\\\ After successful application of this novel technique in diffusion studies of $^{11}$C ($t_{1/2}$ = 20.3 min), this experiment aims at performing self-diffusion studies of $^{31}$Si ($t_{1/2}$ = 2.6~h) in Si--Ge alloys and in amorphous Si--(B--)C--N ceramics.\\\\ Our motivation for measuring diffusion in Si--Ge alloys is their recent technological renaissance as well as the purpose to test the prediction that in these alloys the self-diffusion mechanism chang...

  19. Amorphization threshold in Si-implanted strained SiGe alloy layers

    Simpson, T.W.; Love, D.; Endisch, E.; Goldberg, R.D.; Mitchell, I.V.; Haynes, T.E.; Baribeau, J.M.

    1994-12-01

    The authors have examined the damage produced by Si-ion implantation into strained Si 1-x Ge x epilayers. Damage accumulation in the implanted layers was monitored in situ by time-resolved reflectivity and measured by ion channeling techniques to determine the amorphization threshold in strained Si 1-x Ge x (x = 0.16 and 0.29) over the temperature range 30--110 C. The results are compared with previously reported measurements on unstrained Si 1-x Ge x , and with the simple model used to describe those results. They report here data which lend support to this model and which indicate that pre-existing strain does not enhance damage accumulation in the alloy layer

  20. Linear microstructural features in R5(Si,Ge)4-type alloys: Difficulties in identification

    Chumbley, L.S.; Ugurlu, O.; McCallum, R.W.; Dennis, K.W.; Mudryk, Y.; Gschneidner, K.A.; Pecharsky, V.K.

    2008-01-01

    A brief review of the current literature concerning compounds based upon the R 5 (Si x Ge 1-x ) 4 structure reveals that essentially all examined alloys contain 'linear features' similar to those first observed by Szade et al. on the surface of Gd 5 Si 4 , Gd 5 Si 2 Ge 2 and Gd 5 Ge 4 samples. Attempts to characterize these features, using a variety of techniques, have proven to be a difficult task. Rather than becoming clearer and better understood, discrepancies in the reported data have resulted in much confusion. A series of comprehensive experiments involving optical, scanning and transmission electron microscopy, X-ray diffractometry, magnetization, and heat capacity measurements have been performed in an attempt to clarify the situation. These experiments, coupled with a critical examination of published data, allow certain misconceptions and apparent contradictions to be understood and explained. Of major importance is the discovery that the volume fraction of the linear feature present is far lower than what one may estimate on the basis of etched samples. The results of this study support previous data that show the linear features are a second phase of composition R 5 (Si x Ge 1-x ) 3 , and reveal the various difficulties associated with proper identification of this phase due to its small size scale and low volume percentage

  1. The structural and electrical characterisation of SiGe heterostructures deposited on strain relaxed virtual substrates

    Hammond, R.

    1998-09-01

    The influence of lateral dimensions on the relaxation mechanism and the resulting effect on the surface topography of limited-area, linearly graded Si 1-x Ge x virtual substrates has been investigated for the first time. A dramatic change in the relaxation mechanism of such buffer layers has been observed for depositions on Si mesa pillars of lateral dimensions of 10μm and below. For such depositions, misfit dislocations are able to extend, unhindered, and terminate at the edges of the growth zone. In this manner, orthogonal misfit dislocation interactions are avoided, yielding a surface free of the problematic surface cross-hatch roughening. However, as the lateral dimension of the growth zone is increased to 20μm, orthogonal misfit interactions occur and relaxation is dominated by the Modified Frank-Read (MFR) multiplication mechanism. The resulting surface morphology shows a pronounced surface cross-hatch roughening. It is proposed that such cross-hatch roughening is a direct consequence of the cooperative stress fields associated with the MFR mechanism. It is postulated that the method of limited-area, linearly graded buffer layers provides a unique opportunity, by which 'ideal' virtual substrates, free of surface cross-hatch and threading dislocations, may be produced to any Ge content. In addition, a unique method by which the electrical performance of low temperature, strained layer depositions may be optimised is discussed. The method relies on the elimination of as-grown lattice imperfections via a post growth thermal anneal treatment. A 25-fold increase in low temperature hole mobility of a Si 0.5 Ge 0.5 /Si 0.7 Ge 0.3 heterostructure has been demonstrated using a 30minute, 750 deg C in-situ, post growth anneal. (author)

  2. High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

    Radamson, H.H. [School of Information and Communication Technology, KTH (Royal Institute of Technology) Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)], E-mail: rad@kth.se; Kolahdouz, M.; Ghandi, R.; Ostling, M. [School of Information and Communication Technology, KTH (Royal Institute of Technology) Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)

    2008-12-05

    This work presents the selective epitaxial growth (SEG) of Si{sub 1-x}Ge{sub x} (x = 0.15-0.315) layers with high amount of boron (1 x 10{sup 20}-1 x 10{sup 21} cm{sup -3}) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers.

  3. High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

    Radamson, H.H.; Kolahdouz, M.; Ghandi, R.; Ostling, M.

    2008-01-01

    This work presents the selective epitaxial growth (SEG) of Si 1-x Ge x (x = 0.15-0.315) layers with high amount of boron (1 x 10 20 -1 x 10 21 cm -3 ) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers

  4. Influence of Ge content on the optical properties of X and W centers in dilute Si-Ge alloys

    Leitão, J.P.; Carvalho, A.; Marques Pereira, Rui Nuno

    2011-01-01

    Photoluminescence (PL) measurements, performed in Si and Si1−xGex alloys (x= 0.0069 and 0.0125) irradiated with protons and annealed between 100 and 650 ∘C, are combined with first-principles calculations to assess the assignment of the W and X lines to the trigonal and tetragonal forms of the tr...

  5. Copper-Silver Alloy Depositions Using Thermionic Vacuum ARC (TVA)

    Akan, T.

    2004-01-01

    TVA is a plasma source generating pure metal vapor plasma and consists of a heated cathode emitting thermo electrons and an anode containing material to be evaporated. We used Cu and Ag pieces as anode materials and produced their alloys by electron bombarding. Cu-Ag alloys in various mass ratios were prepared by using the TVA and the TVA discharges were generated in the vapors of these alloys. The volt-ampere characteristics of the TVA discharges generated in the vapors of these alloys were investigated with respect to the ratio of Ag in the Cu-Ag alloy. Cu-Ag alloy thin films with various mass ratios were deposited onto the glass substrates by using their TVA discharges. The ratios of Cu and Ag in the thin Cu-Ag alloy films were found using scanning electron microscope-energy dispersive xray (SEM-EDX) microanalyses

  6. Formation of amorphous metal alloys by chemical vapor deposition

    Mullendore, A.W.

    1988-03-18

    Amorphous alloys are deposited by a process of thermal dissociation of mixtures of organometallic compounds and metalloid hydrides,e.g., transition metal carbonyl, such as nickel carbonyl and diborane. Various sizes and shapes of deposits can be achieved, including near-net-shape free standing articles, multilayer deposits, and the like. Manipulation or absence of a magnetic field affects the nature and the structure of the deposit. 1 fig.

  7. Electrochemical deposition and characterization of zinc–nickel alloys deposited by direct and reverse current

    JELENA B. BAJAT

    2005-12-01

    Full Text Available Zn–Ni alloys electrochemically deposited on steel under various deposition conditions were investigated. The alloys were deposited on a rotating disc electrode and on a steel panel from chloride solutions by direct and reverse current. The influence of reverse plating variables (cathodic and anodic current densities and their time duration on the composition, phase structure and corrosion properties were investigated. The chemical content and phase composition affect the anticorrosive properties of Zn–Ni alloys during exposure to a corrosive agent (3 % NaCl solution. It was shown that the Zn–Ni alloy electrodeposited by reverse current with a full period T = 1 s and r = 0.2 exhibits the best corrosion properties of all the investigated alloys deposited by reverse current.

  8. In-situ epitaxial growth of heavily phosphorus doped SiGe by low pressure chemical vapor deposition

    Lee, C J

    1998-01-01

    We have studied epitaxial crystal growth of Si sub 1 sub - sub x Ge sub x films on silicon substrates at 550 .deg. C by low pressure chemical vapor deposition. In a low PH sub 3 partial pressure region such as below 1.25x10 sup - sup 3 Pa, both the phosphorus and carrier concentrations increased with increasing PH sub 3 partial pressure, but the deposition rate and the Ge fraction remained constant. In a higher PH sub 3 partial pressure region, the deposition rate, the phosphorus concentration, and the carrier concentration decreased, while the Ge fraction increased. These suggest that high surface coverage of phosphorus suppresses both SiH sub 4 and GeH sub 4 adsorption/reactions on the surfaces, and its suppression effect on SiH sub 4 is actually much stronger than on GeH sub 4. In particular, epitaxial crystal growth is largely controlled by surface coverage effect of phosphorus in a higher PH sub 3 partial pressure region.

  9. The influence of a Si cap on self-organized SiGe islands and the underlying wetting layer

    Brehm, M.; Grydlik, M.; Groiss, H.; Hackl, F.; Schaeffler, F.; Fromherz, T.; Bauer, G.

    2011-01-01

    For the prototypical SiGe/Si(001) Stranski-Krastanow (SK) growth system, the influence of intermixing caused by the deposition of a Si cap layer at temperatures T cap between 300 deg. C and 700 deg. C is studied both for the SiGe wetting layer (WL) and the SiGe islands. Systematic growth experiments were carried out with an ultrahigh resolution of down to 0.005 monolayers (ML) of deposited Ge. The properties of the samples were investigated via photoluminescence (PL) spectroscopy, atomic force microscopy (AFM), and transmission electron microscopy. We studied in detail the influence of T cap in the three main coverage regions of SiGe SK growth, which are (i) the WL build-up regime, (ii) the island nucleation regime, where most of the Ge is supplied via material transfer from the WL, and (iii) the saturation regime, where the WL thickness remains initially stable. At T cap = 300 deg. C, we found that both the WL and the island are essentially preserved in composition and shape, whereas at 500 deg. C the WL becomes heavily alloyed during capping, and at 700 deg. C the islands also become alloyed. At T cap = 500 deg. C we found enhanced WL intermixing in the presence of dome-shaped islands, whereas at T cap 700 deg. C the WL properties become dominated by the dissolution of pyramid-shaped islands upon capping. At Ge coverages above ≅6 ML, we found an unexpected thickening of the WL, almost independently of T cap . This finding suggests that the density and the volume of the dome-shaped islands have an upper limit, beyond which excess Ge from the external source again becomes incorporated into the WL. Finally, we compared PL spectra with AFM-based evaluations of the integral island volumes in order to determine in a straightforward manner the average composition of the SiGe islands.

  10. Corrosion properties of plasma deposited high-alloy steel

    Voleník, Karel; Pražák, M.; Kalabisová, E.; Kreislová, K.; Neufuss, Karel

    2002-01-01

    Roč. 47, - (2002), s. 243-254 ISSN 0001-7043 R&D Projects: GA ČR GA106/99/0298 Institutional research plan: CEZ:AV0Z2043910 Keywords : plasma deposits, high-alloy steel, polarization curves, corrosion test Subject RIV: BL - Plasma and Gas Discharge Physics

  11. Surface tension and density of Si-Ge melts

    Ricci, Enrica; Amore, Stefano; Giuranno, Donatella; Novakovic, Rada; Tuissi, Ausonio; Sobczak, Natalia; Nowak, Rafal; Korpala, Bartłomiej; Bruzda, Grzegorz

    2014-06-01

    In this work, the surface tension and density of Si-Ge liquid alloys were determined by the pendant drop method. Over the range of measurements, both properties show a linear temperature dependence and a nonlinear concentration dependence. Indeed, the density decreases with increasing silicon content exhibiting positive deviation from ideality, while the surface tension increases and deviates negatively with respect to the ideal solution model. Taking into account the Si-Ge phase diagram, a simple lens type, the surface tension behavior of the Si-Ge liquid alloys was analyzed in the framework of the Quasi-Chemical Approximation for the Regular Solutions model. The new experimental results were compared with a few data available in the literature, obtained by the containerless method.

  12. Corrosion properties of aluminum based alloys deposited by ion beam assisted deposition

    Enders, B.; Krauss, S.; Wolf, G.K.

    1994-01-01

    The replacement of cadmium coatings by other protective measures is an important task because of the environmentally detrimental properties of cadmium. Therefore, aluminum and aluminum alloy coatings containing elements such as silicon or magnesium with more positive or negative positions in the galvanic series in relation to pure aluminum were deposited by ion beam assisted deposition onto glass and low carbon steel. Pure aluminum films were deposited onto low carbon steel in order to study the influence of the ion-to-atom arrival ratio and the angle of ion incidence on the corrosion properties. For examination of the pitting behavior as a function of the concentration of alloying element, quasipotentiostatic current-potential and potentiostatic current-time plots were measured in chlorine-containing acetate buffer. It is shown that these alloys can protect steel substrates under uniform and pitting corrosion conditions considerably better than pure aluminum coatings. ((orig.))

  13. Surface roughening of undoped and in situ B-doped SiGe epitaxial layers deposited by using reduced pressure chemical vapor deposition

    Kim, Youngmo; Park, Jiwoo; Sohn, Hyunchul

    2018-01-01

    Si1- x Ge x (:B) epitaxial layers were deposited by using reduced pressure chemical vapor deposition with SiH4, GeH4, and B2H6 source gases, and the dependences of the surface roughness of undoped Si1- x Ge x on the GeH4 flow rate and of Si1- x Ge x :B on the B2H6 flow rate were investigated. The root-mean-square (RMS) roughness value of the undoped Si1- x Ge x at constant thickness increased gradually with increasing Ge composition, resulting from an increase in the amplitude of the wavy surface before defect formation. At higher Ge compositions, the residual strain in Si1- x Ge x significantly decreased through the formation of defects along with an abrupt increase in the RMS roughness. The variation of the surface roughness of Si1- x Ge x :B depended on the boron (B) concentration. At low B concentrations, the RMS roughness of Si1- x Ge x remained constant regardless of Ge composition, which is similar to that of undoped Si1- x Ge x . However, at high B concentrations, the RMS roughness of Si1- x Ge x :B increased greatly due to B islanding. In addition, at very high B concentrations ( 9.9 at%), the RMS roughness of Si1- x Ge x :B decreased due to non-epitaxial growth.

  14. The role of transverse speed on deposition height and material efficiency in laser deposited titanium alloy

    Mahamood, RM

    2013-03-01

    Full Text Available The most commonly used aerospace titanium alloy, Ti6Al4V, was deposited on Ti6Al4V plate of dimension 72 x 72 x5mm. The laser power of 3 kW, powder flow rate of 1.44 g/min and gas flow rate of 4 l/min were used throughout the deposition process...

  15. The study of Zn–Co alloy coatings electrochemically deposited by pulse current

    Tomić Milorad V.

    2012-01-01

    Full Text Available The electrochemical deposition by pulse current of Zn-Co alloy coatings on steel was examined, with the aim to find out whether pulse plating could produce alloys that could offer a better corrosion protection. The influence of on-time and the average current density on the cathodic current efficiency, coating morphology, surface roughness and corrosion stability in 3% NaCl was examined. At the same Ton/Toff ratio the current efficiency was insignificantly smaller for deposition at higher average current density. It was shown that, depending on the on-time, pulse plating could produce more homogenous alloy coatings with finer morphology, as compared to deposits obtained by direct current. The surface roughness was the greatest for Zn-Co alloy coatings deposited with direct current, as compared with alloy coatings deposited with pulse current, for both examined average current densities. It was also shown that Zn-Co alloy coatings deposited by pulse current could increase the corrosion stability of Zn-Co alloy coatings on steel. Namely, alloy coatings deposited with pulse current showed higher corrosion stability, as compared with alloy coatings deposited with direct current, for almost all examined cathodic times, Ton. Alloy coatings deposited at higher average current density showed greater corrosion stability as compared with coatings deposited by pulse current at smaller average current density. It was shown that deposits obtained with pulse current and cathodic time of 10 ms had the poorest corrosion stability, for both investigated average deposition current density. Among all investigated alloy coatings the highest corrosion stability was obtained for Zn-Co alloy coatings deposited with pulsed current at higher average current density (jav = 4 A dm-2.

  16. Electroless deposition process for zirconium and zirconium alloys

    Donaghy, Robert E.; Sherman, Anna H.

    1981-01-01

    A method is disclosed for preventing stress corrosion cracking or metal embrittlement of a zirconium or zirconium alloy container that is to be coated on the inside surface with a layer of a metal such as copper, a copper alloy, nickel, or iron and used for holding nuclear fuel material as a nuclear fuel element. The zirconium material is etched in an etchant solution, desmutted mechanically or ultrasonically, oxidized to form an oxide coating on the zirconium, cleaned in an aqueous alkaline cleaning solution, activated for electroless deposition of a metal layer and contacted with an electroless metal plating solution. This method provides a boundary layer of zirconium oxide between the zirconium container and the metal layer.

  17. Deposition of magnetite particles onto alloy-800 steam generator tubes

    Basset, M.; Arbeau, N.; McInerney, J.; Lister, D.H. [Univ. of New Brunswick, Dept. of Chemical Engineering, Fredericton, NB (Canada)

    1998-07-01

    Fouling is a particularly serious problem in the power generating industry. Deposits modify the thermalhydraulic characteristics of heat transfer surfaces by changing the resistance to heat transfer and the resistance to fluid flow, and, if thick enough, can harbour aggressive chemicals. Deposits are also implicated in the increase of radiation fields around working areas in the primary heat transfer systems of nuclear power plants. In order to understand the preliminary steps of the formation of corrosion product deposits on the outsides of steam generator tubes, a laboratory program has investigated the deposition of magnetite particles from suspension in water onto Alloy-800 surfaces under various conditions of flow, chemistry and boiling heat transfer. A recirculating loop made of stainless steel operating at less than 400kPa pressure, with a nominal coolant temperature of 90 degrees C, was equipped with a vertical glass column which housed a 2.5E-01m-long Alloy-800 boiler tube capable of generating a heat flux of 240kW/m{sup 2} . A concentration of suspended magnetite of 5.0E-03kg/m{sup 3} was maintained in the recirculating coolant, which was maintained at a pH of 7.5. The magnetite was synthesized with a sol-gel process, which was developed to produce reproducibly monodispersed, colloidal (<1{mu}m) and nearly spherical particles. A radiotracing method was used to characterize the deposit evolution with time and to quantify the removal of magnetite particles. The results from a series of deposition experiments are presented here. The deposition process is described in terms of a two-step mechanism: the transport step, involving the transport from the bulk of the liquid to the vicinity of the surface, followed by the attachment step, involving the attachment of the particle onto the surface. Under non-boiling heat transfer conditions, diffusion seems to be the dominant factor ruling deposition with a small contribution from thermophoresis; removal was

  18. Deposition of magnetite particles onto alloy-800 steam generator tubes

    Basset, M.; Arbeau, N.; McInerney, J.; Lister, D.H.

    1998-01-01

    Fouling is a particularly serious problem in the power generating industry. Deposits modify the thermalhydraulic characteristics of heat transfer surfaces by changing the resistance to heat transfer and the resistance to fluid flow, and, if thick enough, can harbour aggressive chemicals. Deposits are also implicated in the increase of radiation fields around working areas in the primary heat transfer systems of nuclear power plants. In order to understand the preliminary steps of the formation of corrosion product deposits on the outsides of steam generator tubes, a laboratory program has investigated the deposition of magnetite particles from suspension in water onto Alloy-800 surfaces under various conditions of flow, chemistry and boiling heat transfer. A recirculating loop made of stainless steel operating at less than 400kPa pressure, with a nominal coolant temperature of 90 degrees C, was equipped with a vertical glass column which housed a 2.5E-01m-long Alloy-800 boiler tube capable of generating a heat flux of 240kW/m 2 . A concentration of suspended magnetite of 5.0E-03kg/m 3 was maintained in the recirculating coolant, which was maintained at a pH of 7.5. The magnetite was synthesized with a sol-gel process, which was developed to produce reproducibly monodispersed, colloidal (<1μm) and nearly spherical particles. A radiotracing method was used to characterize the deposit evolution with time and to quantify the removal of magnetite particles. The results from a series of deposition experiments are presented here. The deposition process is described in terms of a two-step mechanism: the transport step, involving the transport from the bulk of the liquid to the vicinity of the surface, followed by the attachment step, involving the attachment of the particle onto the surface. Under non-boiling heat transfer conditions, diffusion seems to be the dominant factor ruling deposition with a small contribution from thermophoresis; removal was considered

  19. Enhancement of surface integrity of titanium alloy with copper by means of laser metal deposition process

    Erinosho, MF

    2016-04-01

    Full Text Available The laser metal deposition process possesses the combination of metallic powder and laser beam respectively. However, these combinations create an adhesive bonding that permanently solidifies the laser-enhanced-deposited powders. Titanium alloys (Ti...

  20. Electrodeposition of Ni-W Alloy and Characterization of Microstructure and Properties of the Deposits

    Mizushima, Io

    2007-01-01

    of the electrolyte. Simultaneously, the presence of carbon is observed with GDOES in layers deposited from the aged electrolyte. The carbon dissolution in the Ni-W alloy deposit is associated with the formation of a new phase in the electrodeposit, giving rise to the anomalous Bragg peak. In Chapter 8 hardness....... The experimental results of the present work are given in the chapters 4-9. In Chapter 4 development of a new electrolyte for Ni-W alloys is described. In the chapters 5-9 the properties of the Ni-W alloys such as residual stress, microstructure, hardness and thermal stability are investigated. Furthermore......, grain size and thermal stability of nickel and Ni-W alloy layers deposited from electrolytes containing equal amounts of citrate, glycine and triethanolamine are investigated. The hardness of the deposits was investigated in the as-deposited layer as well as after annealing for 1 hour at temperatures up...

  1. Effects of deposition temperature on electrodeposition of zinc–nickel alloy coatings

    Qiao, Xiaoping; Li, Helin; Zhao, Wenzhen; Li, Dejun

    2013-01-01

    Highlights: ► Both normal and anomalous deposition can be realized by changing bath temperature. ► The Ni content in Zn–Ni alloy deposit increases sharply as temperature reach 60 °C. ► The abrupt change in coating composition is caused by the shift of cathodic potential. ► The deposition temperature has great effect on microstructure of Zn–Ni alloy deposit. -- Abstract: Zinc–nickel alloy coatings were electrodeposited on carbon steel substrates from the ammonium chloride bath at different temperatures. The composition, phase structure and morphology of these coatings were analyzed by energy dispersive spectrometer, X-ray diffractometer and scanning electron microscopy respectively. Chronopotentiometry and potentiostatic methods were also employed to analyze the possible causes of the composition and structure changes induced by deposition temperature. It has been shown that both normal and anomalous co-deposition of zinc and nickel could be realized by changing deposition temperature under galvanostatic conditions. The abrupt changes in the composition and phase structure of the zinc–nickel alloy coatings were observed when deposition temperature reached 60 °C. The sharply decrease of current efficiency for zinc–nickel co-deposition was also observed when deposition temperature is higher than 40 °C. Analysis of the partial current densities showed that the decrease of current efficiency with the rise of deposition temperature was due to the enhancement of the hydrogen evolution. It was also confirmed that the ennoblement of cathodic potential was the cause for the increase of nickel content in zinc–nickel alloy coatings as a result of deposition temperature rise. The good zinc–nickel alloy coatings with compact morphology and single γ phase could be obtained when the deposition temperature was fixed at 30–40 °C

  2. Hard coatings on magnesium alloys by sputter deposition using a pulsed d.c. bias voltage

    Reiners, G. [Bundesanstalt fuer Materialforschung und -pruefung, Berlin (Germany); Griepentrog, M. [Bundesanstalt fuer Materialforschung und -pruefung, Berlin (Germany)

    1995-12-01

    An increasing use of magnesium-based light-metal alloys for various industrial applications was predicted in different technological studies. Companies in different branches have developed machine parts made of magnesium alloys (e.g. cars, car engines, sewing and knitting machines). Hence, this work was started to evaluate the ability of hard coatings obtained by physical vapour deposition (PVD) in combination with coatings obtained by electrochemical deposition to protect magnesium alloys against wear and corrosion. TiN hard coatings were deposited onto magnesium alloys by unbalanced magnetron sputter deposition. A bipolar pulsed d.c. bias voltage was used to limit substrate temperatures to 180 C during deposition without considerable loss of microhardness and adhesion. Adhesion, hardness and load-carrying capacity of TiN coatings deposited directly onto magnesium alloys are compared with the corresponding values of TiN coatings deposited onto substrates which had been coated electroless with an Ni-P alloy interlayer prior to the PVD. (orig.)

  3. Effect of performance of Zr-Y alloy target on thin film deposition technology

    Pan Qianfu; Liu Chaohong; Jiang Mingzhong; Yin Changgeng

    2011-01-01

    Yttria-stabilized zirconia (YSZ) films are synthesized on corrosion resistant plates by pulsed bias arc ion plating. The arc starting performance and the stability of thin film deposition is explored by improving the uniformity and compactibility of Zr-Y alloy target. The property of Zr-Y alloy target and depositional thin films were measured with the optical microscope, scanning electron microscope, X-ray diffractometer. The result shows that the target with hot rolling and annealing has a good arc starting performance and stability of thin film deposition, and the depositional thin films made of Yttria and amorphous zirconia are homogeneous and compact. (authors)

  4. Modification of anomalous deposition of Zn-Ni alloy by using tin additions

    Zhou Zeyang; O`Keefe, T.J. [Missouri Univ., Rolla, MO (United States). Dept. of Metallurgical Engineering

    1997-11-25

    One of the common examples of anomalous deposition in electrolytic processing is the Zn-Ni alloy coating system. These alloys, in the range 10-15% Ni, are also of commercial interest in electrogalvanizing for protecting steel from corrosion while retaining good formability, weldability and paintability. The primary objective of this research was to obtain a better fundamental understanding of anomalous deposition and to identify ways to modify its influence. Specifically, the effects of tin additions on the composition, structure and surface morphology of Zn-Ni alloy deposits from electrolyte containing 80 g l{sup -1} Zn and 10 g l{sup -1} Ni were studied. Previous work had shown that low concentrations (parts per million) of cations such as antimony and arsenic were very effective in countering the anomalous deposition and increasing the relative nickel content of the deposits. Unfortunately, the morphology and current efficiency were adversely affected by use of these additives. It was found that the addition of tin also appreciably increased the nickel content of the alloy deposit, as well as giving smooth, dense deposits with a current efficiency of about 90%. The surface morphology of the deposits was correlated with the amount of tin added. The limited electrochemical impedance spectroscopy tests conducted showed that the low concentrations of tin did lower the charge transfer resistance of the reaction. Overall, the results were promising but considerably more research is needed to elucidate the basic factors that influence zinc alloy electrocrystallization mechanisms. (orig.) 27 refs.

  5. Hydroxyapatite formation on biomedical Ti–Ta–Zr alloys by magnetron sputtering and electrochemical deposition

    Kim, Hyun-Ju [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Jeong, Yong-Hoon [Biomechanics and Tissue Engineering Laboratory, Division of Orthodontics, College of Dentistry, The Ohio State University, Columbus, OH (United States); Choe, Han-Cheol, E-mail: hcchoe@chosun.ac.kr [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Brantley, William A. [Division of Prosthodontics and Restorative Science, College of Dentistry, The Ohio State University, Columbus, OH (United States)

    2014-12-01

    The purpose of this study was to investigate hydroxyapatite formation on Ti-25Ta-xZr titanium alloys resulting from radio-frequency magnetron sputtering and electrochemical deposition. Electrochemical deposition of hydroxyapatite (HA) was first carried out using a cyclic voltammetry (CV) method at 80 °C in 5 mM Ca (NO{sub 3}){sub 2} + 3 mM NH{sub 4}H{sub 2}PO{sub 4}. Then a physical vapor deposition (PVD) coating was obtained by a radio-frequency (RF) magnetron sputtering technique. The microstructures, phase transformations, and morphologies of the hydroxyapatite films deposited on the titanium alloys were analyzed by optical microscopy (OM), X-ray diffractometer (XRD), energy dispersive X-ray spectroscopy (EDS) and field-emission scanning electron microscopy (FE-SEM). The morphologies of electrochemically deposited HA showed plate-like shapes on the titanium alloys, and the morphologies of the RF-sputtered HA coating had the appearance droplet particles on the plate-like precipitates that had formed by electrochemical deposition. For the RF-sputtered HA coatings, the Ca/P ratio was increased, compared to that for the electrochemically deposited HA surface. Moreover, the RF-sputtered HA coating, consisting of agglomerated droplet particles on the electrochemically deposited HA surface, had better wettability compared to the bulk titanium alloy surface. - Highlights: • Hydroxyapatite (HA) was deposited on Ti–Ta–Zr alloys by radio-frequency (RF) magnetron sputtering and a cyclic voltammetry. • The morphologies of the RF-sputtered HA coating on electrochemical deposits presented plate-like shapes with a droplet particle. • The Ca/P ratio for RF-sputtered HA coatings was greater than that for electrochemical deposited HA coatings. • The RF-sputtered and electrochemical HA coatings had superior wettability compared to the electrochemically deposited coatings.

  6. Hydroxyapatite formation on biomedical Ti–Ta–Zr alloys by magnetron sputtering and electrochemical deposition

    Kim, Hyun-Ju; Jeong, Yong-Hoon; Choe, Han-Cheol; Brantley, William A.

    2014-01-01

    The purpose of this study was to investigate hydroxyapatite formation on Ti-25Ta-xZr titanium alloys resulting from radio-frequency magnetron sputtering and electrochemical deposition. Electrochemical deposition of hydroxyapatite (HA) was first carried out using a cyclic voltammetry (CV) method at 80 °C in 5 mM Ca (NO 3 ) 2 + 3 mM NH 4 H 2 PO 4 . Then a physical vapor deposition (PVD) coating was obtained by a radio-frequency (RF) magnetron sputtering technique. The microstructures, phase transformations, and morphologies of the hydroxyapatite films deposited on the titanium alloys were analyzed by optical microscopy (OM), X-ray diffractometer (XRD), energy dispersive X-ray spectroscopy (EDS) and field-emission scanning electron microscopy (FE-SEM). The morphologies of electrochemically deposited HA showed plate-like shapes on the titanium alloys, and the morphologies of the RF-sputtered HA coating had the appearance droplet particles on the plate-like precipitates that had formed by electrochemical deposition. For the RF-sputtered HA coatings, the Ca/P ratio was increased, compared to that for the electrochemically deposited HA surface. Moreover, the RF-sputtered HA coating, consisting of agglomerated droplet particles on the electrochemically deposited HA surface, had better wettability compared to the bulk titanium alloy surface. - Highlights: • Hydroxyapatite (HA) was deposited on Ti–Ta–Zr alloys by radio-frequency (RF) magnetron sputtering and a cyclic voltammetry. • The morphologies of the RF-sputtered HA coating on electrochemical deposits presented plate-like shapes with a droplet particle. • The Ca/P ratio for RF-sputtered HA coatings was greater than that for electrochemical deposited HA coatings. • The RF-sputtered and electrochemical HA coatings had superior wettability compared to the electrochemically deposited coatings

  7. Electrochemical deposition of coatings of highly entropic alloys from non-aqueous solutions

    Jeníček V.

    2016-03-01

    Full Text Available The paper deals with electrochemical deposition of coatings of highly entropic alloys. These relatively new materials have been recently intensively studied. The paper describes the first results of electrochemical coating with highly entropic alloys by deposition from non-aqueous solutions. An electrochemical device was designed and coatings were deposited. The coatings were characterised with electronic microscopy scanning, atomic absorption spectrometry and X-ray diffraction methods and the combination of methods of thermic analysis of differential scanning calorimetry and thermogravimetry.

  8. Cavitation erosion of Ti-Ni shape memory alloy deposited coatings and Fe base shape memory alloy solid

    Hattori, Shuji; Fujisawa, Seiji; Owa, Tomonobu

    2007-01-01

    In this study, cavitation erosion tests were carried out by using thermal spraying and deposition of Ti-Ni shape memory alloy for the surface coating. The results show the test speciment of Ti-Ni thermal spraying has many initial defects, so that the erosion resistance is very low. The erosion resistance of Ti-Ni deposit is about 5-10 times higher than that of SUS 304, thus erosion resistance of Ti-Ni deposit is better than that of Ti-Ni thermal spraying. The cavitation erosion tests were carried out by using Fe-Mn-Si with shape memory and gunmetal with low elastic modulus. The erosion resistance of Fe-Mn-Si shape memory alloy solid is about 9 times higher than that of SUS 304. The erosion resistance of gunmetal is almost the same as SUS 304, because the test specimen of gunmetal has many small defects on the original surface. (author)

  9. Large area IBAD deposition of Zn-alloys in the coil coating mode

    Wolf, G.K.; Preiss, G.; Muenz, R.; Guzman, L.

    2001-01-01

    In the last years many studies on IBAD coatings on metals and insulators for wear reduction and corrosion protection have been published. However the IBAD deposition of larger areas (>10 x 10 cm) is still a major problem. Therefore we have developed a coil coater running inside the IBAD deposition chamber and allowing very flexible deposition modes. Single layers, multilayers and alloys can be deposited under ion bombardment on substrates up to 30 by 40 cm or on metal and polymer strips 30 cm wide. A number of examples dealing with Zn-alloy coatings on low alloy steel are reported: pure Zn-coatings were compared with Zn/Ti-alloys Zn/Cr-alloys and Zn/Mn-alloys. In some cases also multilayers of the different metals were studied in the static and dynamic operation mode. The coatings had a thickness of 2-8 μm and their corrosion behaviour was investigated by salt spray tests. The microstructure of the coatings was studied by electron microscopy and EDX-depth profiling. The behaviour of the coating/substrate system is discussed in comparison with 'state-of-the-art' Zn-coatings produced by electrogalvanizing. Generally speaking the performance of the optimized coatings was as good as or better than the electrogalvanized standard

  10. Step-driven surface segregation and ordering during Si-Ge MBE growth

    Jesson, D.E.; Pennycook, S.J.; Baribeau, J.M.; Houghton, D.C.

    1992-06-01

    An important role of type S B step edges in determining the as-grown microstructure of Si-Ge superlattices and alloys is implicated from direct Z-contrast images of as-grown structures. A variety of different ordered phase variants can arise at each Si on Ge interface as a result of vertical segregation during superlattice growth. A new monoclinic-ordered structure is predicted to arise as a result of lateral segregation during alloy growth

  11. Templated synthesis of gold-iron alloy nanoparticles using pulsed laser deposition

    Chang, Won-Suk; Park, Jin-Won; Rawat, Vijay; Sands, Timothy; Lee, Gil U

    2006-01-01

    A means for synthesizing paramagnetic nanoparticles composed of an Au-Fe alloy is described using pulsed laser deposition (PLD) of the alloy into a mesoporous alumina membrane template. Nanoparticles 46 ± 13 nm in diameter and composed of a 17% Fe alloy have been created by depositing a 35% Fe alloy into a template with 65 nm diameter pores. These paramagnetic nanoparticles had a saturation magnetization of 11.5 emu g -1 at 2000 G, and their UV-visible extinction spectrum was dominated by strong absorption similar to that of Fe 3 O 4 nanoparticles. The surfaces of these nanoparticles were readily functionalized with a dense monolayer of DNA oligonucleotides that had a 5' thiol group. The Au-Fe nanoparticles appear to be well suited for biotechnological applications and single molecule measurements as they can be synthesized in a specific size range, are strongly paramagnetic, and may be easily functionalized with biological macromolecules

  12. Metastability and relaxation in tensile SiGe on Ge(001) virtual substrates

    Frigerio, Jacopo; Lodari, Mario; Chrastina, Daniel; Mondiali, Valeria; Isella, Giovanni; Bollani, Monica

    2014-01-01

    We systematically study the heteroepitaxy of SiGe alloys on Ge virtual substrates in order to understand strain relaxation processes and maximize the tensile strain in the SiGe layer. The degree of relaxation is measured by high-resolution x-ray diffraction, and surface morphology is characterized by atomic force microscopy. The results are analyzed in terms of a numerical model, which considers dislocation nucleation, multiplication, thermally activated glide, and strain-dependent blocking. Relaxation is found to be sensitive to growth rate and substrate temperature as well as epilayer misfit and thickness, and growth parameters are found which allow a SiGe film with over 4 GPa of tensile stress to be obtained.

  13. Heteroepitaxial Growth of Vacuum-Evaporated Si-Ge Films on Nano structured Silicon Substrates

    Ayu Wazira Azhari; Ayu Wazira Azhari; Kamaruzzaman Sopian; Saleem Hussain Zaidi

    2015-01-01

    In this study, a low-cost vacuum-evaporated technique is used in the heteroepitaxial growth of Si-Ge films. Three different surface variations are employed: for example polished Si, Si micro pyramids and Si nano pillars profiles. A simple metal-assisted chemical etching method is used to fabricate the Si nano pillars, with Ag acting as a catalyst. Following deposition, substrates are subjected to post-deposition thermal annealing at 1000 degree Celsius to improve the crystallinity of the Ge layer. Optical and morphological studies of surface area are conducted using field emission scanning electron microscopy (FE-SEM), Energy Dispersive X-ray (EDX), Raman spectroscopy and infrared spectroscopy. From the infrared spectroscopy analysis, the energy bandgap for Si-Ge films is estimated to be around 0.94 eV. This high-quality Si-Ge film is most favourable for optics, optoelectronics and high-efficiency solar cell applications. (author)

  14. Transient oxidation of Al-deposited Fe-Cr-Al alloy foil

    Andoh, A.

    1997-01-01

    The oxide phases formed on an Al-deposited Fe-Cr-Al alloy foil and an Fe-Cr-Al alloy foil of the same levels of Al and (La+Ce) contents, and their oxidation kinetics have been studied in air at 1173 and 1373 K using TGA, XRD and SEM. Al deposition promotes the growth of metastable aluminas (θ-Al 2 O 3 , γ-Al 2 O 3 ). Scales consisting of θ-Al 2 O 3 and a small amount of α-Al 2 O 3 develop on the Al-deposited foil at 1173 K and exhibit the whisker-type morphology. In the early stage of oxidation at 1373 K, thick scales consisting of θ-Al 2 O 3 and α-Al 2 O 3 grow rapidly on the Al-deposited foil. The transformation from θ-Al 2 O 3 to α-Al 2 O 3 is very fast, and the scales result in only α-Al 2 O 3 . In contrast, α-Al 2 O 3 scales containing a minor amount of FeAl 2 O 4 develop on the alloy foil. The growth rate of α-Al 2 O 3 scales on the Al-deposited foil is smaller than that on the alloy foil and very close to that on NiAl at 1373 K. (orig.)

  15. Rapid Solidification of a New Generation Aluminum-Lithium Alloy via Electrospark Deposition

    Heard, David W.; Boselli, Julien; Gauvin, Raynald; Brochu, Mathieu

    Electrospark deposition (ESD) is a rapid solidification processing technique capable of depositing a metal onto a conductive substrate. The short pulse duration and high pulse frequency, combined with the small amount of material transferred during each pulse, results in high cooling rates being realized, on the order of 105-106 C/sec. This study investigates the ability to induce solute trapping behavior, for a new generation aluminum-lithium alloy, AA2199, using ESD.

  16. The surface chemistry of 3-mercaptopropyltrimethoxysilane films deposited on magnesium alloy AZ91

    Scott, A.; Gray-Munro, J.E.

    2009-01-01

    Magnesium and its alloys have desirable physical and mechanical properties for a number of applications. Unfortunately, these materials are highly susceptible to corrosion, particularly in the presence of aqueous solutions. The purpose of this study is to develop a uniform, non-toxic surface treatment to enhance the corrosion resistance of magnesium alloys. This paper reports the influence of the coating bath parameters and alloy microstructure on the deposition of 3-mercaptopropyltrimethoxysilane (MPTS) coatings on magnesium alloy AZ91. The surface chemistry at the magnesium/MPTS interface has also been explored. The results indicate that the deposition of MPTS onto AZ91 was influenced by both the pH and MPTS concentration in the coating bath. Furthermore, scanning electron microscopy results showed that the MPTS film deposited uniformly on all phases of the magnesium alloy surface. X-ray photoelectron spectroscopy studies revealed that at the magnesium/MPTS interface, the molecules bond to the surface through the thiol group in an acid-base interaction with the Mg(OH) 2 layer, whereas in the bulk of the film, the molecules are randomly oriented.

  17. Investigation into cathode polarization during deposition of rhodium-nickel and rhodium-indium alloys

    Evdokimova, N.V.; Byacheslavov, P.M.; Lokshtanova, O.G.

    1979-01-01

    The results of kinetic regularities experimental investigations during electrodeposition of rhodium-nickel and rhonium-indium alloys are presented. Methods of general and partial polarization curves have been used to show the nature of polarization during the rhonium-nickel and rhodium-indium alloys deposition. It is shown that indium into the rhodium-indium alloy and nickel into the rhodium-nickel alloy deposit with great depolarization ( PHIsub(In)sup(0)=-0.33B, PHIsub(Ni)sup(0)=-0.23B). Indium and nickel in pure form do not deposit from the electrolytes of the given composition (H 2 SO 4 - 50 g/l, HNH 2 SO 3 -10 g/l). The recalculation of partial polarization curve of indium precipitation into the rhodium-indium alloy in the mixed kinetics coordinates gives a straight line with 40 mV inclination angle. This corresponds to the delayed stage of the second electron addition with the imposition of diffusion limitations

  18. Corrosion properties of plasma deposited nickel and nickel-based alloys

    Voleník, Karel; Pražák, M.; Kalabisová, E.; Kreislová, K.; Had, J.; Neufuss, Karel

    2003-01-01

    Roč. 48, č. 3 (2003), s. 215-226 ISSN 0001-7043 R&D Projects: GA ČR GA106/99/0298 Institutional research plan: CEZ:AV0Z2043910 Keywords : plasma deposits, nickel, nickel-based alloys Subject RIV: JK - Corrosion ; Surface Treatment of Materials

  19. State of residual stress in laser-deposited ceramic composite coatings on aluminum alloys

    Kadolkar, P. B.; Watkins, T. R.; De Hosson, J. Th. M.; Kooi, B. J.; Dahotre, N. B.

    The nature and magnitude of the residual stresses within laser-deposited titanium carbide (TiC) coatings on 2024 and 6061 aluminum (Al) alloys were investigated. Macro- and micro-stresses within the coatings were determined using an X-ray diffraction method. Owing to increased debonding between the

  20. High strength and large ductility in spray-deposited Al–Zn–Mg–Cu alloys

    Yu, Hongchun, E-mail: hcyu@hnu.edu.cn [School of Materials Science and Engineering, Central South University, Changsha 410083, Hunan (China); Wang, Mingpu; Jia, Yanlin [School of Materials Science and Engineering, Central South University, Changsha 410083, Hunan (China); Xiao, Zhu, E-mail: xiaozhu8417@gmail.com [School of Engineering, University of Liverpool, Liverpool L69 3GH (United Kingdom); Chen, Chang; Lei, Qian; Li, Zhou; Chen, Wei [School of Materials Science and Engineering, Central South University, Changsha 410083, Hunan (China); Zhang, Hao [Jiangsu Haoran Spray Forming Alloys Co., Ltd., Zhengjiang 212009, Jiangsu (China); Wang, Yanguo; Cai, Canying [School of Physics and Microelectronics, Hunan University, Changsha 410082, Hunan (China)

    2014-07-15

    Highlights: • Spray deposition process was used to produce Al alloys with excellent performance. • The deposited alloys exhibited a high strength of 690 MPa and elongation up to 17.2%. • The η′ phase was coherent with α-Al and their orientation relationship was studied. • The interface misfits and the transition matrixes of two phases were calculated. - Abstract: The mechanical properties and microstructure of large-scale Al–Zn–Mg–Cu alloys fabricated by spray deposition/rapid solidification technology were investigated in detail. The as-extruded alloys under peak-aging temper exhibited ultimate tensile strength (UTS), yield strength (YS) and elongation of 690 MPa, 638 MPa and 17.2%, respectively. The simultaneous coexisting of high strength and large tensile ductility of the alloys were achieved in our experiment. It was considered that the high-density nano-precipitates distributed uniformly in the peak-aged alloys may be responsible for the high strength and improved ductility. Orientation relationship between η′ precipitates and α-Al matrix were verified by high resolution transmission electron microscopy (HRTEM) and selected area electron diffraction patterns (SADPs) observations. The η′ phases in the alloy were fully coherent with the aluminum matrix, with the orientation relationship of (101{sup ¯}0){sub η{sup ′}}//{110}{sub Al} and [1{sup ¯}21{sup ¯}0]{sub η{sup ′}}//<1{sup ¯}12>{sub Al}. The relationship between the lattice parameters of η′ phase and the related plane-spacing of the aluminum were a{sub η{sup ′}}=3d{sub (112){sub A{sub l}}} and c{sub η{sup ′}}=6d{sub (111){sub A{sub l}}}. Based on obtained orientation relationship, the transition matrix of η′ phases were also calculated.

  1. A Metallurgical Investigation of the Direct Energy Deposition Surface Repair of Ferrous Alloys

    Marya, Manuel; Singh, Virendra; Hascoet, Jean-Yves; Marya, Surendar

    2018-02-01

    Among additive manufacturing (AM) processes, the direct energy deposition (DED) by laser is explored to establish its applicability for the repair of ferrous alloys such as UNS G41400 low-alloy steel, UNS S41000 martensitic stainless steel, UNS S17400 precipitation-strengthened martensitic stainless steel, and UNS S32750 super-duplex stainless steel. Unlike plating, thermal spray, and conventional cladding weld, DED laser powder deposition offers potential advantages, e.g., thin deposits, limited dilutions, narrow heat-affected zones (HAZ), potentially improved surface properties. In this investigation, all AM deposits were completed with an IREPA CLAD™ system using a powder feed of UNS N06625, an alloy largely selected for its outstanding corrosion resistance. This investigation first addresses topological aspects of AM deposits (including visual imperfections) before focusing on changes in microstructure, microhardness, chemical composition across AM deposits and base materials. It has been established that dense, uniform, hard ( 300 HVN), crack-free UNS N06625-compliant AM deposits of fine dendritic microstructures are reliably produced. However, except for the UNS S32750 steel, a significant martensitic hardening was observed in the HAZs of UNS G41400 ( 650 HVN), UNS S41000 ( 500 HVN), and UNS S17400 ( 370 HVN). In summary, this investigation demonstrates that the DED laser repair of ferrous parts with UNS N06625 may restore damaged surfaces, but it also calls for cautions and complementary investigations for alloys experiencing a high HAZ hardening, for which industry standard recommendations are exceeded and lead to an increased risk of delayed cracking in corrosive environments.

  2. Simulating Porous Magnetite Layer Deposited on Alloy 690TT Steam Generator Tubes.

    Jeon, Soon-Hyeok; Son, Yeong-Ho; Choi, Won-Ik; Song, Geun Dong; Hur, Do Haeng

    2018-01-02

    In nuclear power plants, the main corrosion product that is deposited on the outside of steam generator tubes is porous magnetite. The objective of this study was to simulate porous magnetite that is deposited on thermally treated (TT) Alloy 690 steam generator tubes. A magnetite layer was electrodeposited on an Alloy 690TT substrate in an Fe(III)-triethanolamine solution. After electrodeposition, the dense magnetite layer was immersed to simulate porous magnetite deposits in alkaline solution for 50 days at room temperature. The dense morphology of the magnetite layer was changed to a porous structure by reductive dissolution reaction. The simulated porous magnetite layer was compared with flakes of steam generator tubes, which were collected from the secondary water system of a real nuclear power plant during sludge lancing. Possible nuclear research applications using simulated porous magnetite specimens are also proposed.

  3. Laser Direct Metal Deposition of 2024 Al Alloy: Trace Geometry Prediction via Machine Learning.

    Caiazzo, Fabrizia; Caggiano, Alessandra

    2018-03-19

    Laser direct metal deposition is an advanced additive manufacturing technology suitably applicable in maintenance, repair, and overhaul of high-cost products, allowing for minimal distortion of the workpiece, reduced heat affected zones, and superior surface quality. Special interest is growing for the repair and coating of 2024 aluminum alloy parts, extensively utilized for a wide range of applications in the automotive, military, and aerospace sectors due to its excellent plasticity, corrosion resistance, electric conductivity, and strength-to-weight ratio. A critical issue in the laser direct metal deposition process is related to the geometrical parameters of the cross-section of the deposited metal trace that should be controlled to meet the part specifications. In this research, a machine learning approach based on artificial neural networks is developed to find the correlation between the laser metal deposition process parameters and the output geometrical parameters of the deposited metal trace produced by laser direct metal deposition on 5-mm-thick 2024 aluminum alloy plates. The results show that the neural network-based machine learning paradigm is able to accurately estimate the appropriate process parameters required to obtain a specified geometry for the deposited metal trace.

  4. Laser Direct Metal Deposition of 2024 Al Alloy: Trace Geometry Prediction via Machine Learning

    Fabrizia Caiazzo

    2018-03-01

    Full Text Available Laser direct metal deposition is an advanced additive manufacturing technology suitably applicable in maintenance, repair, and overhaul of high-cost products, allowing for minimal distortion of the workpiece, reduced heat affected zones, and superior surface quality. Special interest is growing for the repair and coating of 2024 aluminum alloy parts, extensively utilized for a wide range of applications in the automotive, military, and aerospace sectors due to its excellent plasticity, corrosion resistance, electric conductivity, and strength-to-weight ratio. A critical issue in the laser direct metal deposition process is related to the geometrical parameters of the cross-section of the deposited metal trace that should be controlled to meet the part specifications. In this research, a machine learning approach based on artificial neural networks is developed to find the correlation between the laser metal deposition process parameters and the output geometrical parameters of the deposited metal trace produced by laser direct metal deposition on 5-mm-thick 2024 aluminum alloy plates. The results show that the neural network-based machine learning paradigm is able to accurately estimate the appropriate process parameters required to obtain a specified geometry for the deposited metal trace.

  5. Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure.

    Huang, Zhong-Mei; Huang, Wei-Qi; Dong, Tai-Ge; Wang, Gang; Wu, Xue-Ke

    2016-12-01

    It is very interesting that the enhanced peaks near 1150 and 1550 nm are observed in the photoluminescence (PL) spectra in the quantum system of Si-Ge nanolayer structure, which have the emission characteristics of a three-level system with quantum dots (QDs) pumping and emission of quasi-direct-gap band, in our experiment. In the preparing process of Si-Ge nanolayer structure by using a pulsed laser deposition method, it is discovered that the nanocrystals of Si and Ge grow in the (100) and (111) directions after annealing or electron beam irradiation. The enhanced PL peaks with multi-longitudinal-mode are measured at room temperature in the super-lattice of Si-Ge nanolayer quantum system on SOI.

  6. Electrochemical deposition and characterization of Zn-Al layered double hydroxides (LDHs) films on magnesium alloy

    Wu, Fengxia; Liang, Jun, E-mail: jliang@licp.cas.cn; Peng, Zhenjun; Liu, Baixing

    2014-09-15

    Highlights: • Zn-Al LDHs film was prepared on AZ91D Mg alloy by electrochemical deposition. • The Zn-Al LDHs film was uniform and dense with some small flaws and cracks. • The Zn-Al LDHs film had high adhesion and good corrosion protection to Mg alloy. - Abstract: A zinc-aluminum layered double hydroxides (Zn-Al LDHs) film was prepared on AZ91D magnesium (Mg) alloy substrate by electrochemical deposition method. The characteristics of the film were investigated by X-ray diffraction (XRD), Fourier transform infrared (FT-IR) and scanning electronic microscope (SEM). It was found that the electrodeposited film was composed of crystalline Zn-Al LDHs with nitrate intercalation. The Zn-Al LDHs film was uniform and dense though there also presented some small flaws and cracks. The cross cut tape test showed that the film adhered well to the substrate. Polarization and EIS measurements revealed that the LDHs coated Mg alloy had better corrosion resistance compared to that of the uncoated one in 3.5 wt.% NaCl solution, indicating that the Zn-Al LDHs film could effectively protect Mg alloy from corrosion.

  7. Electrochemical deposition and characterization of Zn-Al layered double hydroxides (LDHs) films on magnesium alloy

    Wu, Fengxia; Liang, Jun; Peng, Zhenjun; Liu, Baixing

    2014-01-01

    Highlights: • Zn-Al LDHs film was prepared on AZ91D Mg alloy by electrochemical deposition. • The Zn-Al LDHs film was uniform and dense with some small flaws and cracks. • The Zn-Al LDHs film had high adhesion and good corrosion protection to Mg alloy. - Abstract: A zinc-aluminum layered double hydroxides (Zn-Al LDHs) film was prepared on AZ91D magnesium (Mg) alloy substrate by electrochemical deposition method. The characteristics of the film were investigated by X-ray diffraction (XRD), Fourier transform infrared (FT-IR) and scanning electronic microscope (SEM). It was found that the electrodeposited film was composed of crystalline Zn-Al LDHs with nitrate intercalation. The Zn-Al LDHs film was uniform and dense though there also presented some small flaws and cracks. The cross cut tape test showed that the film adhered well to the substrate. Polarization and EIS measurements revealed that the LDHs coated Mg alloy had better corrosion resistance compared to that of the uncoated one in 3.5 wt.% NaCl solution, indicating that the Zn-Al LDHs film could effectively protect Mg alloy from corrosion

  8. A comparative chemical network study of HWCVD deposited amorphous silicon and carbon based alloys thin films

    Swain, Bibhu P., E-mail: bibhuprasad.swain@gmail.com [Centre for Materials Science and Nanotechnology, Sikkim Manipal Institute of Technology, Majitar, Rangpo Sikkim (India); Swain, Bhabani S.; Hwang, Nong M. [Thin Films and Microstructure Laboratory, Department of Materials Science and Engineering, Seoul National University, Seoul (Korea, Republic of)

    2014-03-05

    Highlights: • a-SiC:H, a-SiN:H, a-C:H and a-SiCN:H films were deposited by hot wire chemical vapor deposition. • Evolution of microstructure of a-SiCN:H films deposited at different NH{sub 3} flow rate were analyzed. • The chemical network of Si and C based alloys were studied by FTIR and Raman spectroscopy. -- Abstract: Silicon and carbon based alloys were deposited by hot wire chemical vapor deposition (HWCVD). The microstructure and chemical bonding of these films were characterized by field emission scanning electron microscopy, Fourier transform infrared spectroscopy and Raman spectroscopy. The electron microscopy revealed various microstructures were observed for a-C:H, a-SiC:H, a-SiN:H, a-CN:H and a-SiCN:H films. The microstructure of SiN:H films showed agglomerate spherical grains while a-C:H films showed more fractal surface with branched microstructure. However, a-SiC:H, a-CN:H and a-SiCN:H indicated uniform but intermediate surface fractal microstructure. A series of a-SiCN:H films were deposited with variation of NH{sub 3} flow rate. The nitrogen incorporation in a-SiCN:H films alter the carbon network from sp{sup 2} to sp{sup 3} bonding The detail chemical bonding of amorphous films was analyzed by curve fitting method.

  9. Depositing laser-generated nanoparticles on powders for additive manufacturing of oxide dispersed strengthened alloy parts via laser metal deposition

    Streubel, René; Wilms, Markus B.; Doñate-Buendía, Carlos; Weisheit, Andreas; Barcikowski, Stephan; Henrich Schleifenbaum, Johannes; Gökce, Bilal

    2018-04-01

    We present a novel route for the adsorption of pulsed laser-dispersed nanoparticles onto metal powders in aqueous solution without using any binders or surfactants. By electrostatic interaction, we deposit Y2O3 nanoparticles onto iron-chromium based powders and obtain a high dispersion of nano-sized particles on the metallic powders. Within the additively manufactured component, we show that the particle spacing of the oxide inclusion can be adjusted by the initial mass fraction of the adsorbed Y2O3 particles on the micropowder. Thus, our procedure constitutes a robust route for additive manufacturing of oxide dispersion-strengthened alloys via oxide nanoparticles supported on steel micropowders.

  10. Simultaneous Co-deposition of Zn-Mg Alloy Layers on Steel Strip by PVD Process

    Kim, Tae Yeob [POSCO Technical Research Laboratories, Gwangyang (Korea, Republic of); Goodenough, Mark [Strategic Marketing, Tata Steel, Warwickshire (United Kingdom)

    2011-12-15

    This is the first release of an interim report on the development of coating technology of Zn-Mg alloy layers on steel strip by EML-PVD (electromagnetic levitation - physical vapor deposition) process in an air-to-air type continuous PVD pilot plant. It intends to introduce a basic principle of the EML-PVD process together with the high speed PVD pilot plant built in Posco. Due to the agitation effect provided by the high frequency induction coil, simultaneous evaporation of Zn and Mg from a droplet could produce alloy coating layers with Mg content of 6% to 12% depending on the composition of the droplet inside the coil. For its superior corrosion resistance, Zn-Mg alloy coated steel would be a very promising material for automotive, electrical appliances, and construction applications.

  11. Simultaneous Co-deposition of Zn-Mg Alloy Layers on Steel Strip by PVD Process

    Kim, Tae Yeob; Goodenough, Mark

    2011-01-01

    This is the first release of an interim report on the development of coating technology of Zn-Mg alloy layers on steel strip by EML-PVD (electromagnetic levitation - physical vapor deposition) process in an air-to-air type continuous PVD pilot plant. It intends to introduce a basic principle of the EML-PVD process together with the high speed PVD pilot plant built in Posco. Due to the agitation effect provided by the high frequency induction coil, simultaneous evaporation of Zn and Mg from a droplet could produce alloy coating layers with Mg content of 6% to 12% depending on the composition of the droplet inside the coil. For its superior corrosion resistance, Zn-Mg alloy coated steel would be a very promising material for automotive, electrical appliances, and construction applications

  12. Laser deposition rates of thin films of selected metals and alloys

    Cazzaniga, Andrea Carlo; Canulescu, Stela; Schou, Jørgen

    Thin films of Cu, Zn and Sn as well as mixtures of these elements have been produced by Pulsed Laser Deposition (PLD). The deposition rate of single and multicomponent metallic targets was determined. The strength of PLD is that the stoichiometry of complex compounds, even of complicated alloys...... or metal oxides, can be preserved from target to film. We apply this technique to design films of a mixture of Cu, Zn and Sn, which are constituents of the chalcogenide CZTS, which has a composition close to Cu2ZnSnS4. This compound is expected to be an important candidate for absorbers in new solar cells...... for alloys of the different elements as well as compounds with S will be presented....

  13. Correlation between structure and optical properties of Si-based alloys deposited by PECVD

    Giangregorio, M.M. [Institute of Inorganic Methodologies and of Plasmas IMIP-CNR and INSTM-UdR Bari via Orabona, 4-70126 Bari (Italy)]. E-mail: michelaria@hotmail.com; Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas IMIP-CNR and INSTM-UdR Bari via Orabona, 4-70126 Bari (Italy); Sacchetti, A. [Institute of Inorganic Methodologies and of Plasmas IMIP-CNR and INSTM-UdR Bari via Orabona, 4-70126 Bari (Italy); Capezzuto, P. [Institute of Inorganic Methodologies and of Plasmas IMIP-CNR and INSTM-UdR Bari via Orabona, 4-70126 Bari (Italy); Bruno, G. [Institute of Inorganic Methodologies and of Plasmas IMIP-CNR and INSTM-UdR Bari via Orabona, 4-70126 Bari (Italy)

    2006-07-26

    Si-based thin films, including {mu}c-Si, Si{sub 1-x}Ge {sub x} and Si{sub 1-x}C {sub x} alloys, have been deposited by plasma enhanced chemical vapor deposition (PECVD) using SiF{sub 4}:H{sub 2}:He, SiF{sub 4}:GeH{sub 4}:H{sub 2} and SiF{sub 4}:CH{sub 4}:H{sub 2} plasmas, respectively. When SiF{sub 4} is used as Si-precursor, it is found that a low flux of CH{sub 4} or GeH{sub 4} results in incorporation of C and Ge in alloys as high as 30%. Correlations between microstructure and optical properties of films are investigated using spectroscopic ellipsometry. The role of fluorine atoms in the growth chemistry and material microstructure is discussed.

  14. Surface modification of 2014 aluminium alloy-Al2O3 particles composites by nickel electrochemical deposition

    Molina, J.M.; Saravanan, R.A.; Narciso, J.; Louis, E.

    2004-01-01

    A method to modify the surface of aluminium matrix composites (AMC) by electrochemical nickel deposition has been developed. Deposition was carried out in a stirred standard Watt's bath, whereas potential and time were varied to optimize coating characteristics. The method, that allowed to overcome the serious difficulties associated to electrochemical deposition of an inherently inhomogeneous material, was used to nickel coat composites of 2014 aluminium alloy-15 vol.% Al 2 O 3 particles. Coats with a good adherence and up to 60 μm thick were easily obtained. In order to improve surface properties, the coated composite was subjected to rather long (from 10 to 47.5 h) heat treatments at a temperature of 520 deg,C. The heat treatments improved the uniformity of the deposited layer and promoted the formation of Al-Ni intermetallics (mainly Al 3 Ni 2 , as revealed by X-ray diffraction and energy-dispersive X-ray analysis (EDX)). Experimental results indicate that growth of the intermetallic layer is diffusion limited

  15. Chemical vapor deposition of amorphous ruthenium-phosphorus alloy films

    Shin Jinhong; Waheed, Abdul; Winkenwerder, Wyatt A.; Kim, Hyun-Woo; Agapiou, Kyriacos; Jones, Richard A.; Hwang, Gyeong S.; Ekerdt, John G.

    2007-01-01

    Chemical vapor deposition growth of amorphous ruthenium-phosphorus films on SiO 2 containing ∼ 15% phosphorus is reported. cis-Ruthenium(II)dihydridotetrakis-(trimethylphosphine), cis-RuH 2 (PMe 3 ) 4 (Me = CH 3 ) was used at growth temperatures ranging from 525 to 575 K. Both Ru and P are zero-valent. The films are metastable, becoming increasingly more polycrystalline upon annealing to 775 and 975 K. Surface studies illustrate that demethylation is quite efficient near 560 K. Precursor adsorption at 135 K or 210 K and heating reveal the precursor undergoes a complex decomposition process in which the hydride and trimethylphosphine ligands are lost at temperatures as low at 280 K. Phosphorus and its manner of incorporation appear responsible for the amorphous-like character. Molecular dynamics simulations are presented to suggest the local structure in the films and the causes for phosphorus stabilizing the amorphous phase

  16. Deposition of Chitosan Layers on NiTi Shape Memory Alloy

    Kowalski P.

    2015-04-01

    Full Text Available The NiTi shape memory alloys have been known from their application in medicine for implants as well as parts of medical devices. However, nickel belongs to the family of elements, which are toxic. Apart from the fact that nickel ions are bonded with titanium into intermetallic phase, their presence may cause allergy. In order to protect human body against release of nickel ions a surface of NiTi alloy can be modified with use of titanium nitrides, oxides or diamond-like layers. On the one hand the layers can play protective role but on the other hand they may influence shape memory behavior. Too stiff or too brittle layer can lead to limiting or completely blocking of the shape recovery. It was the reason to find more elastic covers for NiTi surface protection. This feature is characteristic for polymers, especially, biocompatible ones, which originate in nature. In the reported paper, the chitosan was applied as a deposited layer on surface of the NiTi shape memory alloy. Due to the fact that nature of shape memory effect is sensitive to thermo and/or mechanical treatments, the chitosan layer was deposited with use of electrophoresis carried out at room temperature. Various deposition parameters were checked and optimized. In result of that thin chitosan layer (0.45µm was received on the NiTi alloy surface. The obtained layers were characterized by means of chemical and phase composition, as well as surface quality. It was found that smooth, elastic surface without cracks and/or inclusions can be produced applying 10V and relatively short deposition time - 30 seconds.

  17. Experimental Investigation of the Electro Co-deposition of (Zinc-Nickel Alloy

    Ekhlas Abdulrahman Salman

    2018-02-01

    Full Text Available abstract An experimental investigation has been carried out for zinc-nickel (Zn-Ni electro-deposition using the constant applied current technique. Weight difference approach method was used to determine the cathode current efficiency and deposit thickness. Also, the influence effect of current density on the deposition process, solderability, and porosity of the plating layer in microelectronic applications were examined. The bath temperature effect on nickel composition and the form of the contract was studied using Scanning Electron Microscope (SEM. Moreover, elemental nature of the deposition was analyzed by Energy Dispersive X-Ray (EDX. It has been found that the best bath temperature was 40˚C, specifically at a concentration of 73 g/L of NiCl2.6H2O, has a milestone influence on the nickel composition and structure of the deposits. The potential is a major factor influencing the deposition coating alloy which is adjusted by the operations of the cathodic polarization; rather than the standard potential of the two metals as determined by the e.m.f. series. The anomalous deposition was obtained at a current density lower than 0.8 A/dm2, while normal deposition occurred at current densities less than 1.2 A/dm2. Corrosion behavior was exhibited by the bath and for performance was carried out, and it shows that the best corrosion performance was for nickel composition of 10-12.6 wt%.

  18. Characteristics of Iron-Palladium alloy thin films deposited by magnetron sputtering

    Chiu, Y.-J.; Shen, C.-Y.; Chang, H.-W.; Jian, S.-R.

    2018-06-01

    The microstructural features, magnetic, nanomechanical properties and wettability behaviors of Iron-Palladium (FePd) alloy thin films are investigated by using X-ray diffraction (XRD), atomic force microscopy (AFM), vibrating sample magnetometer (VSM), nanoindentation and water contact angle (CA) techniques, respectively. The FePd alloy thin films were deposited on glass substrates using a magnetron sputtering system. The post-annealing processes of FePd alloy thin films were carried out at 400 °C and 750 °C and resulted in a significant increase of both the average grain size and surface roughness. The XRD analysis showed that FePd alloy thin films exhibited a predominant (1 1 1) orientation. The magnetic field dependence of magnetization of all FePd thin films are measured at room temperature showed the ferromagnetic characteristics. The nanoindentation with continuous stiffness measurement (CSM) is used to measure the hardness and Young's modulus of present films. The contact angle (θCA) increased with increasing surface roughness. The maximum θCA of 75° was achieved for the FePd alloy thin film after annealing at 750 °C and a surface roughness of 4.2 nm.

  19. Cu-Al alloy formation by thermal annealing of Cu/Al multilayer films deposited by cyclic metal organic chemical vapor deposition

    Moon, Hock Key; Yoon, Jaehong; Kim, Hyungjun; Lee, Nae-Eung

    2013-05-01

    One of the most important issues in future Cu-based interconnects is to suppress the resistivity increase in the Cu interconnect line while decreasing the line width below 30 nm. For the purpose of mitigating the resistivity increase in the nanoscale Cu line, alloying Cu with traces of other elements is investigated. The formation of a Cu alloy layer using chemical vapor deposition or electroplating has been rarely studied because of the difficulty in forming Cu alloys with elements such as Al. In this work, Cu-Al alloy films were successfully formed after thermal annealing of Cu/Al multilayers deposited by cyclic metal-organic chemical vapor deposition (C-MOCVD). After the C-MOCVD of Cu/Al multilayers without gas phase reaction between the Cu and Al precursors in the reactor, thermal annealing was used to form Cu-Al alloy films with a small Al content fraction. The resistivity of the alloy films was dependent on the Al precursor delivery time and was lower than that of the aluminum-free Cu film. No presence of intermetallic compounds were detected in the alloy films by X-ray diffraction measurements and transmission electron spectroscopy.

  20. Strain-induced ordered structure of titanium carbide during depositing diamond on Ti alloy substrate

    Li, X.J., E-mail: lixj@alum.imr.ac.cn [College of Material Science and Engineering, Key Laboratory of Advanced Structural Materials, Ministry of Education, Changchun University of Technology, Changchun, 130012 (China); He, L.L., E-mail: llhe@imr.ac.cn [Shenyang National Lab of Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China); Li, Y.S. [Department of Mechanical Engineering, University of Saskatchewan, Saskatoon S7N 5A9, SK (Canada); Plasma Physics Laboratory, University of Saskatchewan, Saskatoon, SK S7N 5E2 (Canada); Yang, Q. [Department of Mechanical Engineering, University of Saskatchewan, Saskatoon S7N 5A9, SK (Canada); Hirose, A. [Plasma Physics Laboratory, University of Saskatchewan, Saskatoon, SK S7N 5E2 (Canada)

    2017-01-15

    During the deposition of diamond films on Ti alloy substrates, titanium carbide is a common precipitated phase, preferentially formed at the interfacial region. However, in this case, the precipitation of an ordered structure of titanium carbide has not been reported. In our work, a long periodic ordered structure of TiC has been observed at the deposited diamond film/Ti alloy interface by high resolution transmission electron microscopy (HRTEM). The long periodic ordered structure is identified as 6H-type. The formation mechanism is revealed by comparative studies on the different structures of TiC precipitated under different diamond deposition conditions in terms of deposition time, atmosphere and temperature. A large number of carbon vacancies in the interfacial precipitated TiC phase are verified through electron energy loss spectroscopy (EELS) quantification analysis. However, an ordered arrangement of these carbon vacancies occurs only when the interfacial stress is large enough to induce the precipitation of 6H-type TiC. The supplementary analysis by X-ray diffraction (XRD) further confirms that additional diffraction peaks presented in the XRD patterns are corresponding to the precipitation of 6H-type TiC. - Highlights: •Different structures of TiC are observed during deposited diamond on Ti alloy. •One is common NaCl structure, the other is periodic structure. •The periodic structure is identified as 6H-type by HRTEM. •Carbon vacancies are verified to always exist in the TiC phase. •The precipitation of 6H-type TiC is mainly affected by interfacial stress.

  1. Microstructural control during direct laser deposition of a β-titanium alloy

    Qiu, Chunlei; Ravi, G.A.; Attallah, Moataz M.

    2015-01-01

    Graphical abstract: Microstructural development of Ti5553 during Direct Laser Deposition (DLD). - Highlights: • Good structural and geometrical integrity could be achieved by process design. • Build height increases with decreased scanning speed and increased powder flow rate. • Keeping Z increment close to actual layer thickness is crucial for consistent building. • The laser deposited Ti5553 are dominated by mixed columnar and equiaxed grains. • In situ dwelling and annealing promote α precipitation which improves microhardness. - Abstract: A concern associated with Direct Laser Deposition (DLD) is the difficulty in controlling microstructure due to rapid cooling rates after deposition, particularly in beta-Ti alloys. In these alloys, the beta-phase is likely to exist following DLD, instead of the desirable duplex alpha + beta microstructure that gives a good balance of properties. Thus, in this work, a parametric study was performed to assess the role of DLD parameters on porosity, build geometry, and microstructure in a beta-Ti alloy, Ti–5Al–5Mo–5V–3Cr (Ti5553). The builds were examined using optical microscopy, scanning electron microscopy, and X-ray diffraction. Microhardness measurements were performed to assess the degree of re-precipitation of alpha-phase following an in situ dwelling and laser annealing procedure. The study identified several processing conditions that enable deposition of samples with the desired geometry and low porosity level. The microstructure was dominated by beta-phase, except for the region near the substrate where a limited amount of alpha-precipitates was present due to reheating effect. Although the microstructure was a mixture of equiaxed and columnar beta-grains alongside infrequent fine alpha-precipitates, the builds showed fairly uniform microhardness in different regions. In situ dwelling and annealing did not cause an obvious change in porosity, but did promote the formation of alpha-precipitates

  2. Strain-induced ordered structure of titanium carbide during depositing diamond on Ti alloy substrate

    Li, X.J.; He, L.L.; Li, Y.S.; Yang, Q.; Hirose, A.

    2017-01-01

    During the deposition of diamond films on Ti alloy substrates, titanium carbide is a common precipitated phase, preferentially formed at the interfacial region. However, in this case, the precipitation of an ordered structure of titanium carbide has not been reported. In our work, a long periodic ordered structure of TiC has been observed at the deposited diamond film/Ti alloy interface by high resolution transmission electron microscopy (HRTEM). The long periodic ordered structure is identified as 6H-type. The formation mechanism is revealed by comparative studies on the different structures of TiC precipitated under different diamond deposition conditions in terms of deposition time, atmosphere and temperature. A large number of carbon vacancies in the interfacial precipitated TiC phase are verified through electron energy loss spectroscopy (EELS) quantification analysis. However, an ordered arrangement of these carbon vacancies occurs only when the interfacial stress is large enough to induce the precipitation of 6H-type TiC. The supplementary analysis by X-ray diffraction (XRD) further confirms that additional diffraction peaks presented in the XRD patterns are corresponding to the precipitation of 6H-type TiC. - Highlights: •Different structures of TiC are observed during deposited diamond on Ti alloy. •One is common NaCl structure, the other is periodic structure. •The periodic structure is identified as 6H-type by HRTEM. •Carbon vacancies are verified to always exist in the TiC phase. •The precipitation of 6H-type TiC is mainly affected by interfacial stress.

  3. Magnesium–Gold Alloy Formation by Underpotential Deposition of Magnesium onto Gold from Nitrate Melts

    Vesna S. Cvetković

    2017-03-01

    Full Text Available Magnesium underpotential deposition on gold electrodes from magnesium nitrate –ammonium nitrate melts has been investigated. Linear sweep voltammetry and potential step were used as electrochemical techniques. Scanning electron microscopy (SEM, energy dispersive spectrometry (EDS and X-ray diffraction (XRD were used for characterization of obtained electrode surfaces. It was observed that reduction processes of nitrate, nitrite and traces of water (when present, in the Mg underpotential range studied, proceeded simultaneously with magnesium underpotential deposition. There was no clear evidence of Mg/Au alloy formation induced by Mg UPD from the melt made from eutectic mixture [Mg(NO32·6H2O + NH4NO3·XH2O]. However, EDS and XRD analysis showed magnesium present in the gold substrate and four different Mg/Au alloys being formed as a result of magnesium underpotential deposition and interdiffusion between Mg deposit and Au substrate from the melt made of a nonaqueous [Mg(NO32 + NH4NO3] eutectic mixture at 460 K.

  4. Characterizing the Effect of Laser Power on Laser Metal Deposited Titanium Alloy and Boron Carbide

    Akinlabi, E. T.; Erinosho, M. F.

    2017-11-01

    Titanium alloy has gained acceptance in the aerospace, marine, chemical, and other related industries due to its excellent combination of mechanical and corrosion properties. In order to augment its properties, a hard ceramic, boron carbide has been laser cladded with it at varying laser powers between 0.8 and 2.4 kW. This paper presents the effect of laser power on the laser deposited Ti6Al4V-B4C composites through the evolving microstructures and microhardness. The microstructures of the composites exhibit the formation of α-Ti phase and β-Ti phase and were elongated towards the heat affected zone. These phases were terminated at the fusion zone and globular microstructures were found growing epitaxially just immediately after the fusion zone. Good bondings were formed in all the deposited composites. Sample A1 deposited at a laser power of 0.8 kW and scanning speed of 1 m/min exhibits the highest hardness of HV 432 ± 27, while sample A4 deposited at a laser power of 2.0 kW and scanning speed of 1 m/min displays the lowest hardness of HV 360 ± 18. From the hardness results obtained, ceramic B4C has improved the mechanical properties of the primary alloy.

  5. Surface and corrosion characteristics of carbon plasma implanted and deposited nickel-titanium alloy

    Poon, R.W.Y.; Liu, X.Y.; Chung, C.Y.; Chu, P.K.; Yeung, K.W.K.; Lu, W.W.; Cheung, K.M.C.

    2005-01-01

    Nickel-titanium shape memory alloys (NiTi) are potentially useful in orthopedic implants on account of their super-elastic and shape memory properties. However, the materials are prone to surface corrosion and the most common problem is out-diffusion of harmful Ni ions from the substrate into body tissues and fluids. In order to improve the corrosion resistance and related surface properties, we used the technique of plasma immersion ion implantation and deposition to deposit an amorphous hydrogenated carbon coating onto NiTi and implant carbon into NiTi. Both the deposited amorphous carbon film and carbon plasma implanted samples exhibit much improved corrosion resistances and surface mechanical properties and possible mechanisms are suggested

  6. Nickel coating on high strength low alloy steel by pulse current deposition

    Nigam, S.; Patel, S. K.; Mahapatra, S. S.; Sharma, N.; Ghosh, K. S.

    2015-02-01

    Nickel is a silvery-white metal mostly used to enhance the value, utility, and lifespan of industrial equipment and components by protecting them from corrosion. Nickel is commonly used in the chemical and food processing industries to prevent iron from contamination. Since the properties of nickel can be controlled and varied over broad ranges, nickel plating finds numerous applications in industries. In the present investigation, pulse current electro-deposition technique has been used to deposit nickel on a high strength low alloy (HSLA) steel substrate.Coating of nickel is confirmed by X-ray diffraction (XRD) and EDAX analysis. Optical microscopy and SEM is used to assess the coating characteristics. Electrochemical polarization study has been carried out to study the corrosion behaviour of nickel coating and the polarisation curves have revealed that current density used during pulse electro-deposition plays a vital role on characteristics of nickel coating.

  7. Direct Metal Deposition of H13 Tool Steel on Copper Alloy Substrate: Parametric Investigation

    Imran, M. Khalid; Masood, S. H.; Brandt, Milan

    2015-12-01

    Over the past decade, researchers have demonstrated interest in tribology and prototyping by the laser aided material deposition process. Laser aided direct metal deposition (DMD) enables the formation of a uniform clad by melting the powder to form desired component from metal powder materials. In this research H13 tool steel has been used to clad on a copper alloy substrate using DMD. The effects of laser parameters on the quality of DMD deposited clad have been investigated and acceptable processing parameters have been determined largely through trial-and-error approaches. The relationships between DMD process parameters and the product characteristics such as porosity, micro-cracks and microhardness have been analysed using scanning electron microscope (SEM), image analysis software (ImageJ) and microhardness tester. It has been found that DMD parameters such as laser power, powder mass flow rate, feed rate and focus size have an important role in clad quality and crack formation.

  8. Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layer

    Chao-Chun Wang

    2012-01-01

    Full Text Available The nanocrystalline silicon-germanium (nc-SiGe thin films were deposited by high-frequency (27.12 MHz plasma-enhanced chemical vapor deposition (HF-PECVD. The films were used in a silicon-based thin film solar cell with graded-dead absorption layer. The characterization of the nc-SiGe films are analyzed by scanning electron microscopy, UV-visible spectroscopy, and Fourier transform infrared absorption spectroscopy. The band gap of SiGe alloy can be adjusted between 0.8 and 1.7 eV by varying the gas ratio. For thin film solar cell application, using double graded-dead i-SiGe layers mainly leads to an increase in short-circuit current and therefore cell conversion efficiency. An initial conversion efficiency of 5.06% and the stabilized efficiency of 4.63% for an nc-SiGe solar cell were achieved.

  9. Biased Target Ion Beam Deposition and Nanoskiving for Fabricating NiTi Alloy Nanowires

    Hou, Huilong; Horn, Mark W.; Hamilton, Reginald F.

    2016-12-01

    Nanoskiving is a novel nanofabrication technique to produce shape memory alloy nanowires. Our previous work was the first to successfully fabricate NiTi alloy nanowires using the top-down approach, which leverages thin film technology and ultramicrotomy for ultra-thin sectioning. For this work, we utilized biased target ion beam deposition technology to fabricate nanoscale (i.e., sub-micrometer) NiTi alloy thin films. In contrast to our previous work, rapid thermal annealing was employed for heat treatment, and the B2 austenite to R-phase martensitic transformation was confirmed using stress-temperature and diffraction measurements. The ultramicrotome was programmable and facilitated sectioning the films to produce nanowires with thickness-to-width ratios ranging from 4:1 to 16:1. Energy dispersive X-ray spectroscopy analysis confirmed the elemental Ni and Ti make-up of the wires. The findings exposed the nanowires exhibited a natural ribbon-like curvature, which depended on the thickness-to-width ratio. The results demonstrate nanoskiving is a potential nanofabrication technique for producing NiTi alloy nanowires that are continuous with an unprecedented length on the order of hundreds of micrometers.

  10. Electrophoretic deposition of nanostructured hydroxyapatite coating on AZ91 magnesium alloy implants with different surface treatments

    Rojaee, Ramin, E-mail: raminrojaee@aim.com [Biomaterials Research Group, Department of Materials Engineering, Isfahan University of Technology, Isfahan, 84156-83111 (Iran, Islamic Republic of); Fathi, Mohammadhossein [Biomaterials Research Group, Department of Materials Engineering, Isfahan University of Technology, Isfahan, 84156-83111 (Iran, Islamic Republic of); Dental Materials Research Center, Isfahan University of Medical Sciences, Isfahan (Iran, Islamic Republic of); Raeissi, Keyvan [Department of Materials Engineering, Isfahan University of Technology, Isfahan, 84156-83111 (Iran, Islamic Republic of)

    2013-11-15

    Bio-absorbable magnesium (Mg) based alloys have been introduced as innovative orthopedic implants during recent years. It has been specified that rapid degradation of Mg based alloys in physiological environment should be restrained in order to be utilized in orthopedic trauma fixation and vascular intervention. In this developing field of healthcare materials, micro-arc oxidation (MAO), and MgF{sub 2} conversion coating were exploited as surface pre-treatment of AZ91 magnesium alloy to generate a nanostructured hydroxyapatite (n-HAp) coating via electrophoretic deposition (EPD) method. X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FT-IR), and transmission electron microscopy (TEM) techniques were used to characterize the obtained powder and coatings. The potentiodynamic polarization tests were carried out to evaluate the corrosion behavior of the coated and uncoated specimens, and in vitro bioactivity evaluation were performed in simulated body fluid. Results revealed that the MAO/n-HAp coated AZ91 Mg alloy samples with a rough topography and lower corrosion current density leads to a lower Mg degradation rate accompanied by high bioactivity.

  11. Electrophoretic deposition of nanostructured hydroxyapatite coating on AZ91 magnesium alloy implants with different surface treatments

    Rojaee, Ramin; Fathi, Mohammadhossein; Raeissi, Keyvan

    2013-01-01

    Bio-absorbable magnesium (Mg) based alloys have been introduced as innovative orthopedic implants during recent years. It has been specified that rapid degradation of Mg based alloys in physiological environment should be restrained in order to be utilized in orthopedic trauma fixation and vascular intervention. In this developing field of healthcare materials, micro-arc oxidation (MAO), and MgF 2 conversion coating were exploited as surface pre-treatment of AZ91 magnesium alloy to generate a nanostructured hydroxyapatite (n-HAp) coating via electrophoretic deposition (EPD) method. X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FT-IR), and transmission electron microscopy (TEM) techniques were used to characterize the obtained powder and coatings. The potentiodynamic polarization tests were carried out to evaluate the corrosion behavior of the coated and uncoated specimens, and in vitro bioactivity evaluation were performed in simulated body fluid. Results revealed that the MAO/n-HAp coated AZ91 Mg alloy samples with a rough topography and lower corrosion current density leads to a lower Mg degradation rate accompanied by high bioactivity.

  12. Electrophoretic deposition of nanostructured hydroxyapatite coating on AZ91 magnesium alloy implants with different surface treatments

    Rojaee, Ramin; Fathi, Mohammadhossein; Raeissi, Keyvan

    2013-11-01

    Bio-absorbable magnesium (Mg) based alloys have been introduced as innovative orthopedic implants during recent years. It has been specified that rapid degradation of Mg based alloys in physiological environment should be restrained in order to be utilized in orthopedic trauma fixation and vascular intervention. In this developing field of healthcare materials, micro-arc oxidation (MAO), and MgF2 conversion coating were exploited as surface pre-treatment of AZ91 magnesium alloy to generate a nanostructured hydroxyapatite (n-HAp) coating via electrophoretic deposition (EPD) method. X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FT-IR), and transmission electron microscopy (TEM) techniques were used to characterize the obtained powder and coatings. The potentiodynamic polarization tests were carried out to evaluate the corrosion behavior of the coated and uncoated specimens, and in vitro bioactivity evaluation were performed in simulated body fluid. Results revealed that the MAO/n-HAp coated AZ91 Mg alloy samples with a rough topography and lower corrosion current density leads to a lower Mg degradation rate accompanied by high bioactivity.

  13. Electronic structure of O-doped SiGe calculated by DFT + U method

    Zhao, Zong-Yan; Yang, Wen; Yang, Pei-Zhi

    2016-12-01

    To more in depth understand the doping effects of oxygen on SiGe alloys, both the micro-structure and properties of O-doped SiGe (including: bulk, (001) surface, and (110) surface) are calculated by DFT + U method in the present work. The calculated results are as follows. (i) The (110) surface is the main exposing surface of SiGe, in which O impurity prefers to occupy the surface vacancy sites. (ii) For O interstitial doping on SiGe (110) surface, the existences of energy states caused by O doping in the band gap not only enhance the infrared light absorption, but also improve the behaviors of photo-generated carriers. (iii) The finding about decreased surface work function of O-doped SiGe (110) surface can confirm previous experimental observations. (iv) In all cases, O doing mainly induces the electronic structures near the band gap to vary, but is not directly involved in these variations. Therefore, these findings in the present work not only can provide further explanation and analysis for the corresponding underlying mechanism for some of the experimental findings reported in the literature, but also conduce to the development of μc-SiGe-based solar cells in the future. Project supported by the Natural Science Foundation of Yunnan Province, China (Grant No. 2015FB123), the 18th Yunnan Province Young Academic and Technical Leaders Reserve Talent Project, China (Grant No. 2015HB015), and the National Natural Science Foundation of China (Grant No. U1037604).

  14. Templated self-assembly of SiGe quantum dots

    Dais, Christian

    2009-08-19

    This PhD thesis reports on the fabrication and characterization of exact aligned SiGe quantum dot structures. In general, SiGe quantum dots which nucleate via the Stranski-Krastanov growth mode exhibit broad size dispersion and nucleate randomly on the surface. However, to tap the full potential of SiGe quantum dots it is necessary to control the positioning and size of the dots on a nanometer length, e.g. for electronically addressing of individual dots. This can be realized by so-called templated self-assembly, which combines top-down lithography with bottom-up selfassembly. In this process the lithographically defined pits serve as pre-defined nucleation points for the epitaxially grown quantum dots. In this thesis, extreme ultraviolet interference lithography at a wavelength of e=13.4 nm is employed for prepatterning of the Si substrates. This technique allows the precise and fast fabrication of high-resolution templates with a high degree of reproducibility. The subsequent epitaxial deposition is either performed by molecular beam epitaxy or low-pressure chemical vapour deposition. It is shown that the dot nucleation on pre-patterned substrates depends strongly on the lithography parameters, e.g. size and periodicity of the pits, as well as on the epitaxy parameters, e.g. growth temperature or material coverage. The interrelations are carefully analyzed by means of scanning force microscopy, transmission electron microscopy and X-ray diffraction measurements. Provided that correct template and overgrowth parameters are chosen, perfectly aligned and uniform SiGe quantum dot arrays of different period, size as well as symmetry are created. In particular, the quantum dot arrays with the so far smallest period (35 nm) and smallest size dispersion are fabricated in this thesis. Furthermore, the strain fields of the underlying quantum dots allow the fabrication of vertically aligned quantum dot stacks. Combining lateral and vertical dot alignment results in three

  15. Corrosion resistance and in vitro response of laser-deposited Ti-Nb-Zr-Ta alloys for orthopedic implant applications.

    Samuel, Sonia; Nag, Soumya; Nasrazadani, Seifollah; Ukirde, Vaishali; El Bouanani, Mohamed; Mohandas, Arunesh; Nguyen, Kytai; Banerjee, Rajarshi

    2010-09-15

    While direct metal deposition of metallic powders, via laser deposition, to form near-net shape orthopedic implants is an upcoming and highly promising technology, the corrosion resistance and biocompatibility of such novel metallic biomaterials is relatively unknown and warrants careful investigation. This article presents the results of some initial studies on the corrosion resistance and in vitro response of laser-deposited Ti-Nb-Zr-Ta alloys. These new generation beta titanium alloys are promising due to their low elastic modulus as well as due the fact that they comprise of completely biocompatible alloying elements. The results indicate that the corrosion resistance of these laser-deposited alloys is comparable and in some cases even better than the currently used commercially-pure (CP) titanium (Grade 2) and Ti-6Al-4V ELI alloys. The in vitro studies indicate that the Ti-Nb-Zr-Ta alloys exhibit comparable cell proliferation but enhanced cell differentiation properties as compared with Ti-6Al-4V ELI. (c) 2010 Wiley Periodicals, Inc.

  16. Atomic layer deposited ZrO2 nanofilm on Mg-Sr alloy for enhanced corrosion resistance and biocompatibility.

    Yang, Qiuyue; Yuan, Wei; Liu, Xiangmei; Zheng, Yufeng; Cui, Zhenduo; Yang, Xianjin; Pan, Haobo; Wu, Shuilin

    2017-08-01

    The biodegradability and good mechanical property of magnesium alloys make them potential biomedical materials. However, their rapid corrosion rate in the human body's environment impairs these advantages and limits their clinical use. In this work, a compact zirconia (ZrO 2 ) nanofilm was fabricated on the surface of a magnesium-strontium (Mg-Sr) alloy by the atomic layer deposition (ALD) method, which can regulate the thickness of the film precisely and thus also control the corrosion rate. Corrosion tests reveal that the ZrO 2 film can effectively reduce the corrosion rate of Mg-Sr alloys that is closely related to the thickness of the film. The cell culture test shows that this kind of ZrO 2 film can also enhance the activity and adhesion of osteoblasts on the surfaces of Mg-Sr alloys. The significance of the current work is to develop a zirconia nanofilm on biomedical MgSr alloy with controllable thickness precisely through atomic layer deposition technique. By adjusting the thickness of nanofilm, the corrosion rate of Mg-Sr alloy can be modulated, thereafter, the degradation rate of Mg-based alloys can be controlled precisely according to actual clinical requirement. In addition, this zirconia nanofilm modified Mg-Sr alloys show excellent biocompatibility than the bare samples. Hence, this work provides a new surface strategy to control the degradation rate while improving the biocompatibility of substrates. Copyright © 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  17. Titanium nitride deposition in titanium implant alloys produced by powder metallurgy

    Henriques, V.A.R.; Cairo, C.A.A.; Faria, J.; Lemos, T.G.; Galvani, E.T.

    2009-01-01

    Titanium nitride (TiN) is an extremely hard material, often used as a coating on titanium alloy, steel, carbide, and aluminum components to improve wear resistance. Electron Beam Physical Vapor Deposition (EB-PVD) is a form of deposition in which a target anode is bombarded with an electron beam given off by a charged tungsten filament under high vacuum, producing a thin film in a substrate. In this work are presented results of TiN deposition in targets and substrates of Ti (C.P.) and Ti- 13 Nb- 13 Zr obtained by powder metallurgy. Samples were produced by mixing of hydride metallic powders followed by uniaxial and cold isostatic pressing with subsequent densification by sintering between 900°C up to 1400 °C, in vacuum. The deposition was carried out under nitrogen atmosphere. Sintered samples were characterized for phase composition, microstructure and microhardness by X-ray diffraction, scanning electron microscopy and Vickers indentation, respectively. It was shown that the samples were sintered to high densities and presented homogeneous microstructure, with ideal characteristics for an adequate deposition and adherence. The film layer presented a continuous structure with 15μm. (author)

  18. Nanoscale compositional analysis of NiTi shape memory alloy films deposited by DC magnetron sputtering

    Sharma, S. K.; Mohan, S. [Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore-560012 (India); Bysakh, S. [Central Glass and Ceramics Research Institute, Kolkata-700032 (India); Kumar, A.; Kamat, S. V. [Defence Metallurgical Research Laboratory, Hyderabad-500058 (India)

    2013-11-15

    The formation of surface oxide layer as well as compositional changes along the thickness for NiTi shape memory alloy thin films deposited by direct current magnetron sputtering at substrate temperature of 300 °C in the as-deposited condition as well as in the postannealed (at 600 °C) condition have been thoroughly studied by using secondary ion mass spectroscopy, x-ray photoelectron spectroscopy, and scanning transmission electron microscopy-energy dispersive x-ray spectroscopy techniques. Formation of titanium oxide (predominantly titanium dioxide) layer was observed in both as-deposited and postannealed NiTi films, although the oxide layer was much thinner (8 nm) in as-deposited condition. The depletion of Ti and enrichment of Ni below the oxide layer in postannealed films also resulted in the formation of a graded microstructure consisting of titanium oxide, Ni{sub 3}Ti, and B2 NiTi. A uniform composition of B2 NiTi was obtained in the postannealed film only below a depth of 200–250 nm from the surface. Postannealed film also exhibited formation of a ternary silicide (Ni{sub x}Ti{sub y}Si) at the film–substrate interface, whereas no silicide was seen in the as-deposited film. The formation of silicide also caused a depletion of Ni in the film in a region ∼250–300 nm just above the film substrate interface.

  19. Electrochemical deposition of Mg(OH)2/GO composite films for corrosion protection of magnesium alloys

    Fengxia Wu; Jun Liang; Weixue Li

    2015-01-01

    Mg(OH)2/graphene oxide (GO) composite film was electrochemical deposited on AZ91D magnesium alloys at constant potential. The characteristics of the Mg(OH)2/GO composite film were investigated by scanning electron microscope (SEM), energy-dispersive X-ray spectrometry (EDS), X-ray diffractometer (XRD) and Raman spectroscopy. It was shown that the flaky GO randomly distributed in the composite film. Compared with the Mg(OH)2 film, the Mg(OH)2/GO composite film exhibited more uniform and compac...

  20. State of residual stress in laser-deposited ceramic composite coatings on aluminum alloys

    Kadolkar, P. B.; Watkins, T. R.; De Hosson, J. Th. M.; Kooi, B. J.; Dahotre, N. B.

    2007-01-01

    The nature and magnitude of the residual stresses within laser-deposited titanium carbide (TiC) coatings on 2024 and 6061 aluminum (Al) alloys were investigated. Macro- and micro-stresses within the coatings were determined using an X-ray diffraction method. Owing to increased debonding between the coating and the substrate, the macro-stresses were found to be compressive and to decrease in magnitude with increasing processing speed. The origin of the macro- and micro-stresses is discussed. T...

  1. Microstructural and wear characteristics of cobalt free, nickel base intermetallic alloy deposited by laser cladding

    Awasthi, Reena; Kumar, Santosh; Viswanadham, C.S.; Srivastava, D.; Dey, G.K.; Limaye, P.K.

    2011-01-01

    This paper describes the microstructural and wear characteristics of Ni base intermetallic hardfacing alloy (Tribaloy-700) deposited on stainless steel-316 L substrate by laser cladding technique. Cobalt base hardfacing alloys have been most commonly used hardfacing alloys for application involving wear, corrosion and high temperature resistance. However, the high cost and scarcity of cobalt led to the development of cobalt free hardfacing alloys. Further, in the nuclear industry, the use of cobalt base alloys is limited due to the induced activity of long lived radioisotope 60 Co formed. These difficulties led to the development of various nickel and iron base alloys to replace cobalt base hardfacing alloys. In the present study Ni base intermetallic alloy, free of Cobalt was deposited on stainless steel- 316 L substrate by laser cladding technique. Traditionally, welding and thermal spraying are the most commonly employed hardfacing techniques. Laser cladding has been explored for the deposition of less diluted and fusion-bonded Nickel base clad layer on stainless steel substrate with a low heat input. The laser cladding parameters (Laser power density: 200 W/mm 2 , scanning speed: 430 mm/min, and powder feed rate: 14 gm/min) resulted in defect free clad with minimal dilution of the substrate. The microstructure of the clad layer was examined by Optical microscopy, Scanning electron microscopy, with energy dispersive spectroscopy. The phase analysis was performed by X-ray diffraction technique. The clad layer exhibited sharp substrate/clad interface in the order of planar, cellular, and dendritic from the interface upwards. Dilution of clad with Fe from substrate was very low passing from ∼ 15% at the interface (∼ 40 μm) to ∼ 6% in the clad layer. The clad layer was characterized by the presence of hexagonal closed packed (hcp, MgZn 2 type) intermetallic Laves phase dispersed in the eutectic of Laves and face centered cubic (fcc) gamma solid solution. The

  2. [Comparison of the clinical effects of selective laser melting deposition basal crowns and cobalt chromium alloy base crowns].

    Li, Jing-min; Wang, Wei-qian; Ma, Jing-yuan

    2014-06-01

    To evaluate the clinical effects of selective laser melting (SLM) deposition basal crowns and cobalt chromium alloy casting base crowns. One hundred and sixty eight patients treated with either SLM deposition basal crowns (110 teeth) or cobalt chromium alloy casting basal crowns (110 teeth) were followed-up for 1 month, 6 months, 12 months and 24 months. The revised standard of American Public Health Association was used to evaluate the clinical effect of restoration, including the color of porcelain crowns, gingival inflammation, gingival margin discoloration, and crack or fracture. Data analysis was conducted with SPSS 20 software package for Student's t test and Chi-square test. Six cases were lost to follow-up. The patients who were treated with SLM deposition basal crowns (104 teeth) and cobalt chromium alloy casting base crowns (101 teeth) completed the study. Patients were more satisfied with SLM deposition cobalt chromium alloy porcelain crowns. There was 1 prosthesis with poor marginal fit after 24 months of restoration in SLM crowns. There were 6 prostheses with edge coloring and 8 with poor marginal fit in cobalt chromium alloy casting base crowns, which was significantly different between the 2 groups(P<0.05). The SLM deposition copings results in smaller edge coloring and better marginal fit than those of cobalt-chrome copings. Patients are pleased with short-term clinical results.

  3. Superhydrophobic nanostructured ZnO thin films on aluminum alloy substrates by electrophoretic deposition process

    Huang, Ying; Sarkar, D.K., E-mail: dsarkar@uqac.ca; Chen, X-Grant

    2015-02-01

    Graphical abstract: - Highlights: • Fabrication of superhydrophobic ZnO thin films surfaces by electrophoretic deposition process on aluminum substrates. • Effect of bath temperature on the physical and superhydrophobic properties of thin films. • The water contact angle of 155° ± 3 with roll off property has been observed on the film that was grown at bath temperatures of 50 °C. • The activation energy for electrophoretic deposition of SA-functionalized ZnO nanoparticle is calculated to be 0.50 eV. - Abstract: Superhydrophobic thin films have been fabricated on aluminum alloy substrates by electrophoretic deposition (EPD) process using stearic acid (SA) functionalized zinc oxide (ZnO) nanoparticles suspension in alcohols at varying bath temperatures. The deposited thin films have been characterized using both X-ray diffraction (XRD) and infrared (IR) spectroscopy and it is found that the films contain low surface energy zinc stearate and ZnO nanoparticles. It is also observed that the atomic percentage of Zn and O, roughness and water contact angle of the thin films increase with the increase of the deposited bath temperature. Furthermore, the thin film deposited at 50 °C, having a roughness of 4.54 ± 0.23 μm, shows superhydrophobic properties providing a water contact angle of 155 ± 3° with rolling off properties. Also, the activation energy of electrophoretic deposition of stearic-acid-functionalized ZnO nanoparticles is calculated to be 0.5 eV.

  4. Initial deposition mechanism of electroless nickel plating on AZ91D magnesium alloys

    Song, Y.; Shan, D.; Han, E.

    2006-01-01

    The pretreatment processes and initial deposition mechanism of electroless nickel plating on AZ91D magnesium alloy were investigated by scanning electron microscopy (SEM) and energy dispersive X-ray (EDX). The results showed that alkaline cleaning could remove the greases and oils from the substrate surface. Acid etching could wipe off the metal chippings and oxides. The hydrofluoric acid activating process which could improve the adhesion of coating to substrate played a key role in the subsequent process of electroless nickel plating. The nickel coating was deposited preferentially on the primary α phase and then spread to the eutectic α phase and β phase. The nickel initially nucleated on the primary α phase by a replacement reaction, then grew depending on the autocatalysis function of nickel. The coating on the β phase displayed better adhesion than that on the α phase due to the nails fixing effect. (author)

  5. Friction and corrosion resistance of sputter deposited supersaturated metastable aluminium-molybdenum alloys

    Abu-Zeid, O.A. [Univ. of the United Arab Emirates, Al-Ain (United Arab Emirates). Dept. of Mech. Eng.; Bates, R.I. [Design, Mfg. and Marketing Research Inst., Univ. of Salford (United Kingdom)

    1996-12-15

    Two closed field unbalanced magnetrons with targets of aluminium and molybdenum have been used for the co-deposition of aluminium-molybdenum coatings with different compositions. A pin on disk machine and a computer controlled potentiostat have been used to evaluate respectively, the tribological and corrosion properties of the deposited alloys. Results have shown that introducing molybdenum into aluminium coatings improves their poor tribological properties. Aluminium-molybdenum coatings with different compositions have shown low wear behaviour and for coatings with high molybdenum contents (> 80%) friction coefficients against steel, as low as 0.18 have been obtained. The addition of molybdenum into aluminium coatings has reduced their corrosion tendency and corrosion current density in a marine environment. (orig.)

  6. Low pressure plasma spray deposition of W-Ni-Fe alloy

    Mutasim, Z.Z.; Smith, R.W.

    1991-01-01

    The production of net shape refractory metal structural preforms are increasing in importance in chemical processing, defense and aerospace applications. Conventional methods become limited for refractory metal processing due to the high melting temperatures and fabrication difficulties. Plasma spray forming, a high temperature process, has been shown to be capable of refractory metal powder consolidation in net shape products. The research reported here has evaluated this method for the deposition of heavy tungsten alloys. Plasma Melted Rapidly Solidified (PMRS) W 8%Ni-2%Fe refractory metal powders were spray formed using vacuum plasma spray (VPS) process and produced 99% dense, fine grain and homogeneous microstructures. In this paper plasma operating parameters (plasma arc gas type and flowrate plasma gun nozzle size and spray distance) were studied and their effects on deposit's density and microstructure are reported

  7. Effect of povidone–iodine deposition on tribocorrosion and antibacterial properties of titanium alloy

    Yan, Yu, E-mail: yanyu@ustb.edu.cn [Corrosion and Protection Center, Key Laboratory for Environmental Fracture (MOE), University of Science and Technology Beijing, Beijing 100083 (China); Zhang, Yanbo [Corrosion and Protection Center, Key Laboratory for Environmental Fracture (MOE), University of Science and Technology Beijing, Beijing 100083 (China); Wang, Qikui [Hebei General Hospital, Shijiazhuang (China); Du, Hongwu [School of Chemistry and Biological Engineering, University of Science and Technology Beijing, Beijing (China); Qiao, Lijie [Corrosion and Protection Center, Key Laboratory for Environmental Fracture (MOE), University of Science and Technology Beijing, Beijing 100083 (China)

    2016-02-15

    Graphical abstract: OCP and COF result for treated Ti6Al4V sample after tribocorrosion test. - Highlights: • Tribocorrosion resistance and antibacterial effectiveness were improved by PVP–I deposition. • Nano- and mirco-pores were received. • Even after being damaged by tribology contacts, antibacterial properties were still effective. - Abstract: Infection remains one of the most common causes for the early-stage failure of orthopaedic implants. Many methods have been developed to reduce the growth of bacteria. However, devices such as orthopaedic implants involve relative motion in several parts, and suffer wear from tribocorrosion processes. The surface pattern and texture can be damaged and the anti-bacterial efficiency reduced. In this paper, a two-stage method is reported. Povidone–iodine (PVP–I) was deposited on the titanium alloy surfaces and inside the pores to provide a longer release time. The results show that even under tribological tests, the anti-bacterial performance still remains satisfactory.

  8. Surface modification of Ti-30Ta alloy by electrospun PCL deposition

    Wada, C.M.; Rangel, A.L.R.; Souza, M.A. de; Claro, A.P.R.A.; Rezende, M.C.R. [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), SP (Brazil); Almeida, R. dos S. [Universidade Estadual de Campinas (UNICAMP), SP (Brazil)

    2014-07-01

    Full text: Surface modifications techniques have been used for change the inert surface of the titanium alloys for better interaction. Ingots of the experimental alloy Ti30Ta were melted in an arc furnace and re-melted ten times at least. They were homogenized under vacuum at 1000 °C for 86. 4 ks to eliminate chemical segregation and cold-worked by swaging. Discs were immersed in aqueous NaOH solution for 24 h, dried at room temperature, immersed in HCl and dried at 40 °C in oven for 24 hours. Followed, PCL fibers were deposited on the Ti30Ta alloy discs surfaces by electrospinning. Plasma treatment was carried out for change PCL electrospun by using stainless steel plasma reactor. Samples were immersed in SBF 5x solution for apatite growth. Surfaces were evaluated by using SEM, X-rays diffraction and contact angle. Samples exhibited hydrophilic behavior after plasma treatment and SBF immersion. Results are very interesting for biomedical applications. (author)

  9. Precipitation Behavior and Quenching Sensitivity of a Spray Deposited Al-Zn-Mg-Cu-Zr Alloy

    Xiaofei Sheng

    2017-09-01

    Full Text Available Precipitation behavior and the quenching sensitivity of a spray deposited Al-Zn-Mg-Cu-Zr alloy during isothermal heat treatment have been studied systematically. Results demonstrate that both the hardness and the ultimate tensile strength of the studied alloy decreased with the isothermal treatment time at certain temperatures. More notably, the hardness decreases rapidly after the isothermal heat treatment. During isothermal heat treatment processing, precipitates readily nucleated in the medium-temperature zone (250–400 °C, while the precipitation nucleation was scarce in the low-temperature zone (<250 °C and in the high-temperature zone (>400 °C. Precipitates with sizes of less than ten nanometers would contribute a significant increase in yield strength, while the ones with a larger size than 300 nm would contribute little strengthening effect. Quenching sensitivity is high in the medium-temperature zone (250–400 °C, and corresponding time-temperature-property (TTP curves of the studied alloy have been established.

  10. Surface modification of Ti-30Ta alloy by electrospun PCL deposition

    Wada, C.M.; Rangel, A.L.R.; Souza, M.A. de; Claro, A.P.R.A.; Rezende, M.C.R.; Almeida, R. dos S.

    2014-01-01

    Full text: Surface modifications techniques have been used for change the inert surface of the titanium alloys for better interaction. Ingots of the experimental alloy Ti30Ta were melted in an arc furnace and re-melted ten times at least. They were homogenized under vacuum at 1000 °C for 86. 4 ks to eliminate chemical segregation and cold-worked by swaging. Discs were immersed in aqueous NaOH solution for 24 h, dried at room temperature, immersed in HCl and dried at 40 °C in oven for 24 hours. Followed, PCL fibers were deposited on the Ti30Ta alloy discs surfaces by electrospinning. Plasma treatment was carried out for change PCL electrospun by using stainless steel plasma reactor. Samples were immersed in SBF 5x solution for apatite growth. Surfaces were evaluated by using SEM, X-rays diffraction and contact angle. Samples exhibited hydrophilic behavior after plasma treatment and SBF immersion. Results are very interesting for biomedical applications. (author)

  11. Al2O3 Coatings on Magnesium Alloy Deposited by the Fluidized Bed (FB Technique

    Gabriele Baiocco

    2018-01-01

    Full Text Available Magnesium alloys are widely employed in several industrial domains for their outstanding properties. They have a high strength-weight ratio, with a density that is lower than aluminum (33% less, and feature good thermal properties, dimensional stability, and damping characteristics. However, they are vulnerable to oxidation and erosion-corrosion phenomena when applied in harsh service conditions. To avoid the degradation of magnesium, several coating methods have been presented in the literature; however, all of them deal with drawbacks that limit their application in an industrial environment, such as environmental pollution, toxicity of the coating materials, and high cost of the necessary machinery. In this work, a plating of Al2O3 film on a magnesium alloy realized by the fluidized bed (FB technique and using alumina powder is proposed. The film growth obtained through this cold deposition process is analyzed, investigating the morphology as well as tribological and mechanical features and corrosion behavior of the plated samples. The resulting Al2O3 coatings show consistent improvement of the tribological and anti-corrosive performance of the magnesium alloy.

  12. Al₂O₃ Coatings on Magnesium Alloy Deposited by the Fluidized Bed (FB) Technique.

    Baiocco, Gabriele; Rubino, Gianluca; Tagliaferri, Vincenzo; Ucciardello, Nadia

    2018-01-09

    Magnesium alloys are widely employed in several industrial domains for their outstanding properties. They have a high strength-weight ratio, with a density that is lower than aluminum (33% less), and feature good thermal properties, dimensional stability, and damping characteristics. However, they are vulnerable to oxidation and erosion-corrosion phenomena when applied in harsh service conditions. To avoid the degradation of magnesium, several coating methods have been presented in the literature; however, all of them deal with drawbacks that limit their application in an industrial environment, such as environmental pollution, toxicity of the coating materials, and high cost of the necessary machinery. In this work, a plating of Al₂O₃ film on a magnesium alloy realized by the fluidized bed (FB) technique and using alumina powder is proposed. The film growth obtained through this cold deposition process is analyzed, investigating the morphology as well as tribological and mechanical features and corrosion behavior of the plated samples. The resulting Al₂O₃ coatings show consistent improvement of the tribological and anti-corrosive performance of the magnesium alloy.

  13. Stress evolution during and after sputter deposition of thin Cu Al alloy films

    Pletea, M.; Wendrock, H.; Kaltofen, R.; Schmidt, O. G.; Koch, R.

    2008-06-01

    The stress evolution during and after sputter deposition of thin Cu-Al alloy films containing 1 and 2 at.% Al onto oxidized Si(100) substrates has been studied up to thicknesses of 300 nm by means of in situ substrate curvature measurements. In order to correlate stress and morphology, the microstructure was investigated by focused ion beam microscopy, scanning electron microscopy, and atomic force microscopy. The evolution of the stress and microstructure of the Cu-Al alloy films is similar to that for sputtered pure Cu films. Film growth proceeds in the Volmer-Weber mode, typical for high mobility metals. It is characterized by nucleation, island, percolation, and channel stages before the films become continuous, as well as lateral grain growth in the compact films. With increasing Al content the overall atom mobility and, thus, the average grain size of the alloy films are reduced. Increase of the sputter pressure from 0.5 to 2 Pa leads to films with larger grain size, rougher surface morphology and higher electrical resistivity.

  14. Hydroxyapatite-Coated Magnesium-Based Biodegradable Alloy: Cold Spray Deposition and Simulated Body Fluid Studies

    Noorakma, Abdullah C. W.; Zuhailawati, Hussain; Aishvarya, V.; Dhindaw, B. K.

    2013-10-01

    A simple modified cold spray process in which the substrate of AZ51 alloys were preheated to 400 °C and sprayed with hydroxyapatite (HAP) using high pressure cold air nozzle spray was designed to get biocompatible coatings of the order of 20-30 μm thickness. The coatings had an average modulus of 9 GPa. The biodegradation behavior of HAP-coated samples was tested by studying with simulated body fluid (SBF). The coating was characterized by FESEM microanalysis. ICPOES analysis was carried out for the SBF solution to know the change in ion concentrations. Control samples showed no aluminum corrosion but heavy Mg corrosion. On the HAP-coated alloy samples, HAP coatings started dissolving after 1 day but showed signs of regeneration after 10 days of holding. All through the testing period while the HAP coating got eroded, the surface of the sample got deposited with different apatite-like compounds and the phase changed with course from DCPD to β-TCP and β-TCMP. The HAP-coated samples clearly improved the biodegradability of Mg alloy, attributed to the dissolution and re-precipitation of apatite showed by the coatings as compared to the control samples.

  15. Microstructure and mechanical properties of spray deposited hypoeutectic Al-Si alloy

    Ferrarini, C.F.; Bolfarini, C.; Kiminami, C.S.; Botta F, W.J.

    2004-01-01

    The microstructure and the tensile properties of an Al-8.9 wt.% Si-3.2 wt.% Cu-0.9 wt.% Fe-0.8% Zn alloy processed by spray forming was investigated. The alloy was gas atomized with argon and deposited onto a copper substrate. The microstructure was evaluated by optical microscopy (OM), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS). Small faceted dispersoids observed surrounding equiaxial α-Al matrix were identified by SEM-EDS as silicon particles. Sand cast samples with the same composition showed a columnar dendritic α-Al matrix, Al-Si eutectic, polyhedric α-AlFeSi and needle-like β-AlFeSi intermetallics. In the spray formed material the formation of the Al-Si eutetic was suppressed, and the formation of the α-AlFeSi and β-AlFeSi intermetallics was strongly reduced. The fine and homogeneous microstructure showed an aluminium matrix with grain size ranging from 30 to 40 μm, and particle size of the silicon dispersoids having a mean size of 12 μm. Room temperature tensile tests of the spray formed alloy showed relative increasing of strength and elongation when compared with the values observed for the conventionally cast counterparts. These results can be ascribed to the refined microstructure and the scarce presence of intermetallics of the spray formed material

  16. Tribological properties of duplex MAO/DLC coatings on magnesium alloy using combined microarc oxidation and filtered cathodic arc deposition

    Liang Jun; Wang Peng; Hu Litian; Hao Jingcheng

    2007-01-01

    The combined microarc oxidation (MAO) and filtered cathode arc deposition process was used to deposit duplex MAO/DLC coating on AM60B magnesium alloy. The microstructure and composition of the resulting duplex coating were analyzed by Raman spectroscopy, X-ray photoelectron spectroscope (XPS) and scanning electron microscope (SEM). The tribological behaviors of the duplex coating were studied by ball-on-disk friction testing. It is found that the Ti-doped DLC thin film could be successfully deposited onto the polished MAO coating. The duplex MAO/DLC coating exhibits a better tribological property than the DLC or MAO monolayer on Mg alloy substrate, owing to the MAO coating served as an intermediate layer provides improved load support for the soft Mg alloy substrate and the DLC top coating exhibits low friction coefficient

  17. Indium oxide-based transparent conductive films deposited by reactive sputtering using alloy targets

    Miyazaki, Yusuke; Maruyama, Eri; Jia, Junjun; Machinaga, Hironobu; Shigesato, Yuzo

    2017-04-01

    High-quality transparent conductive oxide (TCO) films, Sn-doped In2O3 (ITO) and In2O3-ZnO (IZO), were successfully deposited on either synthetic silica or polyethylene terephthalate (PET) substrates in the “transition region” by reactive dc magnetron sputtering using In-Zn and In-Sn alloy targets, respectively, with a specially designed plasma emission feedback system. The composition, crystallinity, surface morphology, and electrical and optical properties of the films were analyzed. All of the IZO films were amorphous, whereas the ITO films were polycrystalline over a wide range of deposition conditions. The minimum resistivities of the IZO and ITO films deposited on the heated PET substrates at 150 °C were 3.3 × 10-4 and 5.4 × 10-4 Ω·cm, respectively. By applying rf bias to unheated PET substrates, ITO films with a resistivity of 4.4 × 10-4 Ω·cm were deposited at a dc self-bias voltage of -60 V.

  18. Effect of Cu addition on microstructure and corrosion behavior of spray-deposited Zn–30Al alloy

    Wang Feng; Xiong Baiqing; Zhang Yongan; Liu Hongwei; Li Zhihui; Li Xiwu; Qu Chu

    2012-01-01

    Highlights: ► Zn–30Al–xCu alloys were synthesized by the spray atomization and deposition technique. ► Immersion test and electrochemical measurements have been used to estimate the corrosion rate and the behavior. ► The result indicates that the 1 wt.% Cu addition displays superior corrosion resistance. - Abstract: In this study, one binary Zn–30Al and three ternary Zn–30Al–Cu alloys were synthesized by the spray atomization and deposition technique. The microstructures of the spray-deposited alloys were investigated by means of scanning electron microscope (SEM), transmission electron microscope (TEM), X-ray diffraction (XRD). Immersion test, potentiodynamic polarization and electrochemical impedance measurements have been used to estimate the corrosion rate and the behavior. The results indicate that the 1 wt.% Cu addition to spray-deposited Zn–30Al alloy does not make significant change in microstructure. However, with the 2, 4 wt.% Cu additions to the alloy, some ε-CuZn 4 compounds with particle or irregular shapes were observed on the grain boundaries in the microstructures. Immersion test and electrochemical measurements confirmed that the 1 wt.% Cu addition displays superior corrosion resistance, whereas the 2, 4 wt.% Cu additions have a baneful effect on the corrosion behavior.

  19. Effect of the addition CNTs on performance of CaP/chitosan/coating deposited on magnesium alloy by electrophoretic deposition.

    Zhang, Jie; Wen, Zhaohui; Zhao, Meng; Li, Guozhong; Dai, Changsong

    2016-01-01

    CaP/chitosan/carbon nanotubes (CNTs) coating on AZ91D magnesium alloy was prepared via electrophoretic deposition (EPD) followed by conversion in a phosphate buffer solution (PBS). The bonding between the layer and the substrate was studied by an automatic scratch instrument. The phase compositions and microstructures of the composite coatings were determined by using X-ray diffraction (XRD), Fourier-transformed infrared spectroscopy (FTIR), Raman spectroscopy and scanning electron microscope (SEM). The element concentration and gentamicin concentration were respectively determined by inductively coupled plasma optical emission spectrometer (ICP-OES) test and ultraviolet spectrophotometer (UV). The cell counting kit (CCK) assay was used to evaluate the cytotoxicity of samples to SaOS-2 cells. The results showed that a few CNTs with their original tubular morphology could be found in the CaP/chitosan coating and they were beneficial for the crystal growth of phosphate and improvement of the coating bonding when the addition amount of CNTs in 500 ml of electrophoretic solution was from 0.05 g to 0.125 g. The loading amount of gentamicin increased and the releasing speed of gentamicin decreased after CNTs was added into the CaP/chitosan coating for immersion loading and EPD loading. The cell viability of Mg based CaP/chitosan/CNTs was higher than that of Mg based CaP/chitosan from 16 days to 90 days. Copyright © 2015 Elsevier B.V. All rights reserved.

  20. Stress-directed compositional patterning of SiGe substrates for lateral quantum barrier manipulation

    Ghosh, Swapnadip; Kaiser, Daniel; Sinno, Talid; Bonilla, Jose; Han, Sang M.

    2015-01-01

    While vertical stacking of quantum well and dot structures is well established in heteroepitaxial semiconductor materials, manipulation of quantum barriers in the lateral directions poses a significant engineering challenge. Here, we demonstrate lateral quantum barrier manipulation in a crystalline SiGe alloy using structured mechanical fields to drive compositional redistribution. To apply stress, we make use of a nano-indenter array that is pressed against a Si 0.8 Ge 0.2 wafer in a custom-made mechanical press. The entire assembly is then annealed at high temperatures, during which the larger Ge atoms are selectively driven away from areas of compressive stress. Compositional analysis of the SiGe substrates reveals that this approach leads to a transfer of the indenter array pattern to the near-surface elemental composition, resulting in near 100% Si regions underneath each indenter that are separated from each other by the surrounding Si 0.8 Ge 0.2 bulk. The “stress transfer” process is studied in detail using multiscale computer simulations that demonstrate its robustness across a wide range of applied stresses and annealing temperatures. While the “Si nanodot” structures formed here are not intrinsically useful as quantum structures, it is anticipated that the stress transfer process may be modified by judicious control of the SiGe film thickness and indenter array pattern to form more technologically useful structures

  1. Deposition of waste kaolin in aluminum alloy by electrolytic plasma technique

    Palinkas, Fabiola Bergamasco da Silva Marcondes; Antunes, Maria Lucia Pereira; Cruz, Nilson Cristino; Rangel, Elidiane Cipriano; Souza, Jose Antonio da Silva

    2016-01-01

    Full text: Kaolin is a widely explored mineral for various industrial purposes and its processing generates up to 90% of waste, corresponding to 500 thousand tons annually. The Deposition of Kaolin residue on aluminum alloys by electrolytic plasma has objective of a valorization of the residue. It was evaluated the mineralogical composition by X-ray diffraction (XRD), using PANalytical diffractometer X'Pert Pro. The scanning electron microscopy (SEM) and the spectrometry of dispersive of energy (EDS) evaluated the morphology and elementary chemical composition by microscope scanning electron JEOL JSM-6010LA. The Infrared Spectroscopy (FTIR) has used a Spectrometer the Perkin-Elmer 1760X FT-IR with spectral range 4000-400 cm -1 . XRD results indicate peaks of kaolinite as the main constituent. The morphology of the particles correspond to pseudo-hexagonal lamellar crystals characteristic of kaolinite, analysis by EDS allows to identify the composition of the particles as Al and Si. The samples were deposited at concentrations of 5, 10 and 15 mg of the residue and each concentration were considered deposition times of 5, 10 and 15 minutes. Tests evaluate the films as the wettability, chemical composition, morphology, mechanical strength and corrosion resistance. Results indicate the presence of kaolinite, alumina and mullite in the obtained coatings. (author)

  2. Effect of structure and deposition technology on tribological properties of DLC coatings alloyed with VIA group metals

    Khrushchov, M.; Levin, I.; Marchenko, E.; Avdyukhina, V.; Petrzhik, M.

    2016-07-01

    The results of a comprehensive research on atomic structure, phase composition, micromechanical and tribological characteristics of alloyed DLC coatings have been presented. The coatings have been deposited by reactive magnetron sputtering in acetylene-nitrogen gas mixtures of different compositions (a-C:H:Cr), by plasma-assisted chemical vapor deposition in atmospheres of silicone-organic precursor gases (a-C:H:Mo:Si), and by nonreactive magnetron sputtering of a composite target (a-C:H:W).

  3. Wear resistance of laser-deposited boride reinforced Ti-Nb-Zr-Ta alloy composites for orthopedic implants

    Samuel, Sonia; Nag, Soumya; Scharf, Thomas W.; Banerjee, Rajarshi

    2008-01-01

    The inherently poor wear resistance of titanium alloys limits their application as femoral heads in femoral (hip) implants. Reinforcing the soft matrix of titanium alloys (including new generation β-Ti alloys) with hard ceramic precipitates such as borides offers the possibility of substantially enhancing the wear resistance of these composites. The present study discusses the microstructure and wear resistance of laser-deposited boride reinforced composites based on Ti-Nb-Zr-Ta alloys. These composites have been deposited using the LENS TM process from a blend of elemental Ti, Nb, Zr, Ta, and boron powders and consist of complex borides dispersed in a matrix of β-Ti. The wear resistance of these composites has been compared with that of Ti-6Al-4V ELI, the current material of choice for orthopedic femoral implants, against two types of counterfaces, hard Si 3 N 4 and softer SS440C stainless steel. Results suggest a substantial improvement in the wear resistance of the boride reinforced Ti-Nb-Zr-Ta alloys as compared with Ti-6Al-4V ELI against the softer counterface of SS440. The presence of an oxide layer on the surface of these alloys and composites also appears to have a substantial effect in terms of enhanced wear resistance

  4. Significant reduction of thermal conductivity in Si/Ge core-shell nanowires.

    Hu, Ming; Giapis, Konstantinos P; Goicochea, Javier V; Zhang, Xiaoliang; Poulikakos, Dimos

    2011-02-09

    We report on the effect of germanium (Ge) coatings on the thermal transport properties of silicon (Si) nanowires using nonequilibrium molecular dynamics simulations. Our results show that a simple deposition of a Ge shell of only 1 to 2 unit cells in thickness on a single crystalline Si nanowire can lead to a dramatic 75% decrease in thermal conductivity at room temperature compared to an uncoated Si nanowire. By analyzing the vibrational density states of phonons and the participation ratio of each specific mode, we demonstrate that the reduction in the thermal conductivity of Si/Ge core-shell nanowire stems from the depression and localization of long-wavelength phonon modes at the Si/Ge interface and of high frequency nonpropagating diffusive modes.

  5. Strain-induced formation of fourfold symmetric SiGe quantum dot molecules.

    Zinovyev, V A; Dvurechenskii, A V; Kuchinskaya, P A; Armbrister, V A

    2013-12-27

    The strain field distribution at the surface of a multilayer structure with disklike SiGe nanomounds formed by heteroepitaxy is exploited to arrange the symmetric quantum dot molecules typically consisting of four elongated quantum dots ordered along the [010] and [100] directions. The morphological transition from fourfold quantum dot molecules to continuous fortresslike quantum rings with an increasing amount of deposited Ge is revealed. We examine key mechanisms underlying the formation of lateral quantum dot molecules by using scanning tunneling microscopy and numerical calculations of the strain energy distribution on the top of disklike SiGe nanomounds. Experimental data are well described by a simple thermodynamic model based on the accurate evaluation of the strain dependent part of the surface chemical potential. The spatial arrangement of quantum dots inside molecules is attributed to the effect of elastic property anisotropy.

  6. Effects of the composition and crystal structure of zinc-nickel alloy deposits on the internal strain

    Tsuru, Y.; Tanaka, M. [Kyushu Inst. of Technology, Kitakyushu (Japan). Faculty of Engineering

    1996-02-05

    An average internal strain in the electrodeposited Zn-Ni alloy films was in-situ measured using the resistance wire type strain gauge setup on the reverse side of the copper substrate. The Ni content of the Zn-Ni alloy coatings utilized for the steel frame of automobiles and for the plastic coated steel sheets is around at 15% and the dominant structure is the {gamma}-phase. Such Zn-Ni alloy coatings are favorable for the protection of steel against corrosion. The internal stress in these deposits is always compressive during electroplating. However, upon turning off the current, the internal stress sharply changes from compressive to tensile. The tensile stress seems to simultaneously result in many cracks on the surface of the deposits. In this study, a resistance wire type strain gauge meter was used for successive measurement of the internal strain in the deposits during electroplating and solid-state stripping voltammetry was applied for the anodic dissolution of the deposits. And the effects concerning the partial electroleaching of Zn from the deposits on the internal strain in the deposits under periodic reverse plating. 15 refs., 8 figs., 3 tabs.

  7. Nanocrystalline soft ferromagnetic Ni-Co-P thin film on Al alloy by low temperature electroless deposition

    Aal, A. Abdel; Shaaban, A.; Hamid, Z. Abdel

    2008-01-01

    Soft ferromagnetic ternary Ni-Co-P films were deposited onto Al 6061 alloy from low temperature Ni-Co-P electroless plating bath. The effect of deposition parameters, such as time and pH, on the plating rate of the deposit were examined. The results showed that the plating rate is a function of pH bath and the highest coating thickness can be obtained at pH value from 8 to10. The surface morphology, phase structure and the magnetic properties of the prepared films have been investigated using scanning electron microscopy (SEM), X-ray diffraction analysis (XRD) and vibrating magnetometer device (VMD), respectively. The deposit obtained at optimum conditions showed compact and smooth with nodular grains structure and exhibited high magnetic moments and low coercivety. Potentiodynamic polarization corrosion tests were used to study the general corrosion behavior of Al alloys, Ni-P and Ni-Co-P coatings in 3.5% NaCl solution. It was found that Ni-Co-P coated alloy demonstrated higher corrosion resistance than Ni-P coating containing same percent of P due to the Co addition. The Ni-Co-P coating with a combination of high corrosion resistance, high hardness and excellent magnetic properties would be expected to enlarge the applications of the aluminum alloys

  8. The Field Emission Properties of Graphene Aggregates Films Deposited on Fe-Cr-Ni alloy Substrates

    Zhanling Lu

    2010-01-01

    Full Text Available The graphene aggregates films were fabricated directly on Fe-Cr-Ni alloy substrates by microwave plasma chemical vapor deposition system (MPCVD. The source gas was a mixture of H2 and CH4 with flow rates of 100 sccm and 12 sccm, respectively. The micro- and nanostructures of the samples were characterized by Raman scattering spectroscopy, field emission scanning electron microscopy (SEM, and transparent electron microscopy (TEM. The field emission properties of the films were measured using a diode structure in a vacuum chamber. The turn-on field was about 1.0 V/m. The current density of 2.1 mA/cm2 at electric field of 2.4 V/m was obtained.

  9. Electrochemical deposition of Mg(OH2/GO composite films for corrosion protection of magnesium alloys

    Fengxia Wu

    2015-09-01

    Full Text Available Mg(OH2/graphene oxide (GO composite film was electrochemical deposited on AZ91D magnesium alloys at constant potential. The characteristics of the Mg(OH2/GO composite film were investigated by scanning electron microscope (SEM, energy-dispersive X-ray spectrometry (EDS, X-ray diffractometer (XRD and Raman spectroscopy. It was shown that the flaky GO randomly distributed in the composite film. Compared with the Mg(OH2 film, the Mg(OH2/GO composite film exhibited more uniform and compact structure. Potentiodynamic polarization tests revealed that the Mg(OH2/GO composite film could significantly improve the corrosion resistance of Mg(OH2 film with an obvious positive shift of corrosion potential by 0.19 V and a dramatic reduction of corrosion current density by more than one order of magnitude.

  10. Structure and Properties of Diamond-Like Carbon Films Deposited by PACVD Technique on Light Alloys

    Tański T.

    2016-09-01

    Full Text Available The investigations presented in this paper describe surface treatment performed on samples of heat-treated cast magnesium and aluminium alloy. The structure and chemical composition as well as the functional and mechanical properties of the obtained gradient/monolithic films were analysed by high resolution transmission electron microscopy and scanning electron microscopy, Raman spectroscopy, the ball-on-disk tribotester and scratch testing. Moreover, investigation of the electrochemical corrosion behaviour of the samples was carried out by means of potentiodynamic polarisation curves in 1-M NaCl solution. The coatings produced by chemical vapour deposition did not reveal any delamination or defects and they adhere closely to the substrate. The coating thickness was in a range of up to 2.5 microns. Investigations using Raman spectra of the DLC films confirmed a multiphase character of the diamond-like carbon layer, revealing the sp2 and sp3 electron hybridisation responsible for both the hardness and the friction coefficient. The best wear resistance test results were obtained for the magnesium alloy substrate - AZ61, for which the measured value of the friction path length was equal to 630 m.

  11. Microstructure and electrochemical characterization of laser melt-deposited Ti2Ni3Si/NiTi intermetallic alloys

    Dong Lixin; Wang Huaming

    2008-01-01

    Corrosion and wear resistant Ti 2 Ni 3 Si/NiTi intermetallic alloys with Ti 2 Ni 3 Si as the reinforcing phase and the ductile NiTi as the toughening phase were designed and fabricated by the laser melt-deposition manufacturing process. Electrochemical behavior of the alloys was investigated using potentiodynamic polarization testing and electrochemical impedance spectroscopy in an NaOH solution. The results showed that the alloys have outstanding corrosion resistance due to the formation of a protective passive surface film of Ni(OH) 2 as well as the high chemical stability and strong inter-atomic bonds inherent to Ti 2 Ni 3 Si and NiTi intermetallics. The Ti 2 Ni 3 Si content has a significant influence on the microstructure of the alloys but only a slight effect on electrochemical corrosion properties

  12. TC17 titanium alloy laser melting deposition repair process and properties

    Liu, Qi; Wang, Yudai; Zheng, Hang; Tang, Kang; Li, Huaixue; Gong, Shuili

    2016-08-01

    Due to the high manufacturing cost of titanium compressor blisks, aero engine repairing process research has important engineering significance and economic value. TC17 titanium alloy is a rich β stable element dual α+β phase alloy whose nominal composition is Ti-5Al-2Sn-2Zr-4Mo-4Cr. It has high mechanical strength, good fracture toughness, high hardenability and a wide forging-temperature range. Through a surface response experiment with different laser powers, scanning speeds and powder feeding speeds, the coaxial powder feeding laser melting deposition repair process is studied for the surface circular groove defects. In this paper, the tensile properties, relative density, microhardness, elemental composition, internal defects and microstructure of the laser-repaired TC17 forging plate are analyzed. The results show that the laser melting deposition process could realize the form restoration of groove defect; tensile strength and elongation could reach 1100 MPa and 10%, which could reach 91-98% that of original TC17 wrought material; with the optimal parameters (1000 W-25 V-8 mm/s), the microhardness of the additive zone, the heat-affected zone and base material is evenly distributed at 370-390 HV500. The element content difference between the additive zone and base material is less than ±0.15%. Due to the existence of the pores 10 μm in diameter, the relative density could reach 99%, which is mainly inversely proportional to the powder feeding speed. The repaired zone is typically columnar and dendrite crystal, and the 0.5-1.5 mm-deep heat-affected zone in the groove interface is coarse equiaxial crystal.

  13. Effect of the addition CNTs on performance of CaP/chitosan/coating deposited on magnesium alloy by electrophoretic deposition

    Zhang, Jie [Department of Neuro Intern, First Affiliated Hospital of Harbin Medical University, Harbin 150001 (China); Pharmaceutical Research Institute in Heilongjiang Province, Jiamusi University, Jiamusi 154007 (China); Wen, Zhaohui, E-mail: wenzhaohui1968@163.com [Department of Neuro Intern, First Affiliated Hospital of Harbin Medical University, Harbin 150001 (China); Zhao, Meng [Department of Neuro Intern, First Affiliated Hospital of Harbin Medical University, Harbin 150001 (China); Li, Guozhong, E-mail: hydlgz1962@163.com [Department of Neuro Intern, First Affiliated Hospital of Harbin Medical University, Harbin 150001 (China); Dai, Changsong, E-mail: changsd@hit.edu.cn [School of Chemistry Engineering and Technology, Harbin Institute of Technology, Harbin 150001 (China)

    2016-01-01

    CaP/chitosan/carbon nanotubes (CNTs) coating on AZ91D magnesium alloy was prepared via electrophoretic deposition (EPD) followed by conversion in a phosphate buffer solution (PBS). The bonding between the layer and the substrate was studied by an automatic scratch instrument. The phase compositions and microstructures of the composite coatings were determined by using X-ray diffraction (XRD), Fourier-transformed infrared spectroscopy (FTIR), Raman spectroscopy and scanning electron microscope (SEM). The element concentration and gentamicin concentration were respectively determined by inductively coupled plasma optical emission spectrometer (ICP-OES) test and ultraviolet spectrophotometer (UV). The cell counting kit (CCK) assay was used to evaluate the cytotoxicity of samples to SaOS-2 cells. The results showed that a few CNTs with their original tubular morphology could be found in the CaP/chitosan coating and they were beneficial for the crystal growth of phosphate and improvement of the coating bonding when the addition amount of CNTs in 500 ml of electrophoretic solution was from 0.05 g to 0.125 g. The loading amount of gentamicin increased and the releasing speed of gentamicin decreased after CNTs was added into the CaP/chitosan coating for immersion loading and EPD loading. The cell viability of Mg based CaP/chitosan/CNTs was higher than that of Mg based CaP/chitosan from 16 days to 90 days. - Highlights: • CaP/chitosan/CNTs coating on AZ91D was prepared. • The addition of CNTs could improve the performance of CaP/chitosan coating. • A new method of loading gentamicin by EPD was proposed.

  14. Study of magnetism in Ni-Cr hardface alloy deposit on 316LN stainless steel using magnetic force microscopy

    Kishore, G. V. K.; Kumar, Anish; Chakraborty, Gopa; Albert, S. K.; Rao, B. Purna Chandra; Bhaduri, A. K.; Jayakumar, T.

    2015-07-01

    Nickel base Ni-Cr alloy variants are extensively used for hardfacing of austenitic stainless steel components in sodium cooled fast reactors (SFRs) to avoid self-welding and galling. Considerable difference in the compositions and melting points of the substrate and the Ni-Cr alloy results in significant dilution of the hardface deposit from the substrate. Even though, both the deposit and the substrate are non-magnetic, the diluted region exhibits ferromagnetic behavior. The present paper reports a systematic study carried out on the variations in microstructures and magnetic behavior of American Welding Society (AWS) Ni Cr-C deposited layers on 316 LN austenitic stainless steels, using atomic force microscopy (AFM) and magnetic force microscopy (MFM). The phase variations of the oscillations of a Co-Cr alloy coated magnetic field sensitive cantilever is used to quantitatively study the magnetic strength of the evolved microstructure in the diluted region as a function of the distance from the deposit/substrate interface, with the spatial resolution of about 100 nm. The acquired AFM/MFM images and the magnetic property profiles have been correlated with the variations in the chemical compositions in the diluted layers obtained by the energy dispersive spectroscopy (EDS). The study indicates that both the volume fraction of the ferromagnetic phase and its ferromagnetic strength decrease with increasing distance from the deposit/substrate interface. A distinct difference is observed in the ferromagnetic strength in the first few layers and the ferromagnetism is observed only near to the precipitates in the fifth layer. The study provides a better insight of the evolution of ferromagnetism in the diluted layers of Ni-Cr alloy deposits on stainless steel.

  15. A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD

    Yamamoto, Yuji; Zaumseil, Peter; Capellini, Giovanni; Schubert, Markus Andreas; Hesse, Anne; Albani, Marco; Bergamaschini, Roberto; Montalenti, Francesco; Schroeder, Thomas; Tillack, Bernd

    2017-12-01

    Self-ordered three-dimensional body-centered tetragonal (BCT) SiGe nanodot structures are fabricated by depositing SiGe/Si superlattice layer stacks using reduced pressure chemical vapor deposition. For high enough Ge content in the island (>30%) and deposition temperature of the Si spacer layers (T > 700 °C), we observe the formation of an ordered array with islands arranged in staggered position in adjacent layers. The in plane periodicity of the islands can be selected by a suitable choice of the annealing temperature before the Si spacer layer growth and of the SiGe dot volume, while only a weak influence of the Ge concentration is observed. Phase-field simulations are used to clarify the driving force determining the observed BCT ordering, shedding light on the competition between heteroepitaxial strain and surface-energy minimization in the presence of a non-negligible surface roughness.

  16. On the interplay between phonon-boundary scattering and phonon-point-defect scattering in SiGe thin films

    Iskandar, A.; Abou-Khalil, A.; Kazan, M.; Kassem, W.; Volz, S.

    2015-03-01

    This paper provides theoretical understanding of the interplay between the scattering of phonons by the boundaries and point-defects in SiGe thin films. It also provides a tool for the design of SiGe-based high-efficiency thermoelectric devices. The contributions of the alloy composition, grain size, and film thickness to the phonon scattering rate are described by a model for the thermal conductivity based on the single-mode relaxation time approximation. The exact Boltzmann equation including spatial dependence of phonon distribution function is solved to yield an expression for the rate at which phonons scatter by the thin film boundaries in the presence of the other phonon scattering mechanisms. The rates at which phonons scatter via normal and resistive three-phonon processes are calculated by using perturbation theories with taking into account dispersion of confined acoustic phonons in a two dimensional structure. The vibrational parameters of the model are deduced from the dispersion of confined acoustic phonons as functions of temperature and crystallographic direction. The accuracy of the model is demonstrated with reference to recent experimental investigations regarding the thermal conductivity of single-crystal and polycrystalline SiGe films. The paper describes the strength of each of the phonon scattering mechanisms in the full temperature range. Furthermore, it predicts the alloy composition and film thickness that lead to minimum thermal conductivity in a single-crystal SiGe film, and the alloy composition and grain size that lead to minimum thermal conductivity in a polycrystalline SiGe film.

  17. Effect of process parameters on formability of laser melting deposited 12CrNi2 alloy steel

    Peng, Qian; Dong, Shiyun; Kang, Xueliang; Yan, Shixing; Men, Ping

    2018-03-01

    As a new rapid prototyping technology, the laser melting deposition technology not only has the advantages of fast forming, high efficiency, but also free control in the design and production chain. Therefore, it has drawn extensive attention from community.With the continuous improvement of steel performance requirements, high performance low-carbon alloy steel is gradually integrated into high-tech fields such as aerospace, high-speed train and armored equipment.However, it is necessary to further explore and optimize the difficult process of laser melting deposited alloy steel parts to achieve the performance and shape control.This article took the orthogonal experiment on alloy steel powder by laser melting deposition ,and revealed the influence rule of the laser power, scanning speed, powder gas flow on the quality of the sample than the dilution rate, surface morphology and microstructure analysis were carried out.Finally, under the optimum technological parameters, the Excellent surface quality of the alloy steel forming part with high density, no pore and cracks was obtained.

  18. Raman and photoluminescence spectroscopy of SiGe layer evolution on Si(100) induced by dewetting

    Shklyaev, A. A.; Volodin, V. A.; Stoffel, M.; Rinnert, H.; Vergnat, M.

    2018-01-01

    High temperature annealing of thick (40-100 nm) Ge layers deposited on Si(100) at ˜400 °C leads to the formation of continuous films prior to their transformation into porous-like films due to dewetting. The evolution of Si-Ge composition, lattice strain, and surface morphology caused by dewetting is analyzed using scanning electron microscopy, Raman, and photoluminescence (PL) spectroscopies. The Raman data reveal that the transformation from the continuous to porous film proceeds through strong Si-Ge interdiffusion, reducing the Ge content from 60% to about 20%, and changing the stress from compressive to tensile. We expect that Ge atoms migrate into the Si substrate occupying interstitial sites and providing thereby the compensation of the lattice mismatch. Annealing generates only one type of radiative recombination centers in SiGe resulting in a PL peak located at about 0.7 and 0.8 eV for continuous and porous film areas, respectively. Since annealing leads to the propagation of threading dislocations through the SiGe/Si interface, we can tentatively associate the observed PL peak to the well-known dislocation-related D1 band.

  19. Plasmochemical modification of aluminum-zinc alloys using NH{sub 3}-Ar atmosphere with anti-wear coatings deposition

    Kyzioł, Karol, E-mail: kyziol@agh.edu.pl [Faculty of Materials Science and Ceramics, AGH University of Science and Technology, A. Mickiewicza Av. 30, 30 059 Kraków (Poland); Koper, Katarzyna [Faculty of Materials Science and Ceramics, AGH University of Science and Technology, A. Mickiewicza Av. 30, 30 059 Kraków (Poland); Kaczmarek, Łukasz [Institute of Materials Science and Engineering, Lodz University of Technology, Stefanowskiego Str. 1/15, 90 924 Łódz (Poland); Grzesik, Zbigniew [Faculty of Materials Science and Ceramics, AGH University of Science and Technology, A. Mickiewicza Av. 30, 30 059 Kraków (Poland)

    2017-03-01

    This paper constitutes a continuation of studies on modification technologies for 7075 series aluminum alloys (Al-Zn) in plasmochemical conditions using the RF CVD (Radio-Frequency Chemical Vapor Deposition) method. This technique is simultaneously the second stage of alloy ageing. The presented results concern optimization of alloy surface modification using N{sup +} ions (in NH{sub 3} or NH{sub 3}/Ar atmosphere) before obtaining a DLC (Diamond-Like Carbon) layer doped with Si and N. From the results it can be concluded that the most profitable mechanical properties (H, ca. 12 GPa and E, ca. 115 GPa) are obtained when the SiCNH coating process is preceded by Al-Zn alloy surface modification with nitrogen ions. These ions are provided by a flowing NH{sub 3} and Ar gas mixture (1:1 ratio). In these process conditions, the lowest tribological wear of the surface is also observed. Furthermore, the obtained coating exhibits a fine-grained structure. - Highlights: • Surface properties of Al-Zn alloy after plasma processes are investigated. • Modification in a RF reactor was the second stage of ageing. • The N{sup +} ion treatments of aluminum substrates was justified. • SiCNH coatings obtained on Al alloys significantly improve mechanical parameters.

  20. Wear and Corrosion Properties of 316L-SiC Composite Coating Deposited by Cold Spray on Magnesium Alloy

    Chen, Jie; Ma, Bing; Liu, Guang; Song, Hui; Wu, Jinming; Cui, Lang; Zheng, Ziyun

    2017-08-01

    In order to improve the wear and corrosion resistance of commonly used magnesium alloys, 316L stainless steel coating and 316L-SiC composite coating have been deposited directly on commercial AZ80 magnesium alloy using cold spraying technology (CS). The microstructure, hardness and bonding strength of as-sprayed coatings were studied. Their tribological properties sliding against Si3N4 and GCr15 steel under unlubricated conditions were evaluated by a ball-on-disk tribometer. Corrosion behaviors of coated samples were also evaluated and compared to that of uncoated magnesium alloy substrate in 3.5 wt.% NaCl solution by electrochemical measurements. Scanning electron microscopy was used to characterize the corresponding wear tracks and corroded surfaces to determine wear and corrosion mechanisms. The results showed that the as-sprayed coatings possessed higher microhardness and more excellent wear resistance than magnesium alloy substrate. Meanwhile, 316L and 316L-SiC coating also reduced the corrosion current density of magnesium alloy and the galvanic corrosion of the substrates was not observed after 200-h neutral salt spray exposure, which demonstrated that corrosion resistance of a magnesium alloy substrate could be greatly improved by cold-sprayed stainless steel-based coatings.

  1. Preparation of silicon-substituted hydroxyapatite coatings on Ti–30Nb–xTa alloys using cyclic electrochemical deposition method

    Kim, Eun-Sil [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, School of Dentistry, Chosun University (Korea, Republic of); Jeong, Yong-Hoon [Biomechanics and Tissue Engineering Laboratory, Division of Orthodontics, College of Dentistry, The Ohio State University, Columbus, OH (United States); Choe, Han-Cheol, E-mail: hcchoe@chosun.ac.kr [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, School of Dentistry, Chosun University (Korea, Republic of); Brantley, William A. [Division of Restorative Science and Prosthodontics, College of Dentistry, The Ohio State University, Columbus, OH (United States)

    2014-12-01

    Silicon-substituted hydroxyapatite coatings on Ti–30Nb–xTa alloys, prepared using a cyclic electrochemical deposition method, have been investigated using a variety of surface analytical experimental methods. The silicon-substituted hydroxyapatite (Si-HA) coatings were prepared by electrolytic deposition in electrolytes containing Ca{sup 2+}, PO{sub 4}{sup 3−} and SiO{sub 3}{sup 2−} ions. The deposited layers were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), field emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectroscopy (EDS), and a wettability test. Phase transformation from (α″ + β) to largely β occurred with increasing Ta content in the Ti –30Nb–xTa alloys, yielding larger grain size. The morphology of the Si-HA coatings was changed by increasing the number of deposition cycles, with the initial plate-like structures changing to mixed rod-like and plate-like shapes, and finally to a rod-like structure. From the ATR-FTIR spectra, Si existed in the form of SiO{sub 4}{sup 4−} groups in Si-HA coating layer. The lowest aqueous contact angles and best wettability were found for the Si-HA coatings prepared with 30 deposition cycles. - Highlights: • Electrochemically deposited Si-HA coatings on Ti –30Nb–xTa alloys were investigated. • The Si-HA coatings were initially precipitated along the martensitic structure. • The morphology of the Si-HA coating changed with the deposition cycles. • Si existed in the form of SiO{sub 4}{sup 4−} groups in the Si-HA coating.

  2. Preparation of silicon-substituted hydroxyapatite coatings on Ti–30Nb–xTa alloys using cyclic electrochemical deposition method

    Kim, Eun-Sil; Jeong, Yong-Hoon; Choe, Han-Cheol; Brantley, William A.

    2014-01-01

    Silicon-substituted hydroxyapatite coatings on Ti–30Nb–xTa alloys, prepared using a cyclic electrochemical deposition method, have been investigated using a variety of surface analytical experimental methods. The silicon-substituted hydroxyapatite (Si-HA) coatings were prepared by electrolytic deposition in electrolytes containing Ca 2+ , PO 4 3− and SiO 3 2− ions. The deposited layers were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), field emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectroscopy (EDS), and a wettability test. Phase transformation from (α″ + β) to largely β occurred with increasing Ta content in the Ti –30Nb–xTa alloys, yielding larger grain size. The morphology of the Si-HA coatings was changed by increasing the number of deposition cycles, with the initial plate-like structures changing to mixed rod-like and plate-like shapes, and finally to a rod-like structure. From the ATR-FTIR spectra, Si existed in the form of SiO 4 4− groups in Si-HA coating layer. The lowest aqueous contact angles and best wettability were found for the Si-HA coatings prepared with 30 deposition cycles. - Highlights: • Electrochemically deposited Si-HA coatings on Ti –30Nb–xTa alloys were investigated. • The Si-HA coatings were initially precipitated along the martensitic structure. • The morphology of the Si-HA coating changed with the deposition cycles. • Si existed in the form of SiO 4 4− groups in the Si-HA coating

  3. The peculiarities of electrochemical deposition and morphology of ZnMn alloy coatings obtained from pyrophosphate electrolyte

    Bučko Mihael M.

    2011-01-01

    Full Text Available The first successful attempt to electrodeposit ZnMn alloy coatings from alkaline bath was made only a few years ago. In this kind of solution, potassium pyrophosphate (K4P2O7 serves both as a complexing agent and as the basic electrolyte. The aim of this work was to study the electrodeposition process and properties of ZnMn alloy coatings deposited from pyrophosphate solution, with a new kind of alkaline pyrophosphate bath. Namely, chloride salts were used as the source of metal ions and ascorbic acid was used as reducing agent. The composition of the plating solution was as follows: 1 mol dm-3 K4P2O7 + 0.017 mol dm-3 ascorbic acid + 0.05 mol dm-3 ZnCl2 + 0.05 mol dm-3 MnCl2•4H2O. Cathodic processes during the alloy electrodeposition were investigated using linear voltammetry. The influence of addition of small amounts of ascorbic acid on the cathodic processes was established. It was shown that this substance inhibits hydrogen evolution and increases the current efficiency of alloy deposition. The current efficiency in the plating bath examined was in the range of 25 and 30%, which was quite higher as compared to the results reported in the literature for electrodeposition of ZnMn alloy from pyrophosphate bath. Electrodeposition of ZnMn alloys was performed galvanostatically on steel panels, at current densities of 20120 mA cm-2. The coatings with the best appearance were obtained at current densities between 30 and 80 mA cm-2. The surface morphology studies, based on atomic force microscopy measurements, showed that morphology of the deposits is highly influenced by deposition current density. ZnMn coating deposited at 30 mA cm-2 was more compact and possessed more homogeneous structure (more uniform agglomeration size than the coating deposited at 80 mA cm-2. Such dependence of morphology on the current density could be explained by the high rate of hydrogen evolution reaction during the electrodeposition process.

  4. Alloying process of sputter-deposited Ti/Ni multilayer thin films

    Cho, H.; Kim, H.Y.; Miyazaki, S.

    2006-01-01

    Alloying process of a Ti/Ni multilayer thin film was investigated in detail by differential scanning calorimetry (DSC), X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The Ti/Ni multilayer thin film was prepared by depositing Ti and Ni layers alternately on a SiO 2 /Si substrate. The number of each metal layer was 100, and the total thickness was 3 μm. The alloy composition was determined as Ti-51 at.%Ni by electron probe micro analysis (EPMA). The DSC curve exhibited three exothermic peaks at 621, 680 and 701 K during heating the as-sputtered multilayer thin film. In order to investigate the alloying process, XRD and TEM observation was carried out for the specimens heated up to various temperatures with the heating rate same as the DSC measurement. The XRD profile of the as-sputtered film revealed only diffraction peaks of Ti and Ni. But reaction layers of 3 nm in thickness were observed at the interfaces of Ti and Ni layers in cross-sectional TEM images. The reaction layer was confirmed as an amorphous phase by the nano beam diffraction analysis. The XRD profiles exhibited that the intensity of Ti diffraction peak decreased in the specimen heat-treated above 600 K. The peak from Ni became broad and shifted to lower diffraction angle. The amorphous layer thickened up to 6 nm in the specimen heated up to 640 K. The diffraction peak corresponding to Ti-Ni B2 phase appeared and the peak from Ni disappeared for the specimen heated up to 675 K. The Ti-Ni B2 crystallized from the amorphous reaction layer. After further heating above the third exothermic peak, the intensity of the peak from the Ti-Ni B2 phase increased, the peak from Ti disappeared and the peaks corresponding to Ti 2 Ni appeared. The Ti 2 Ni phase was formed by the reaction of the Ti-Ni B2 and Ti

  5. Laser deposition of (Cu + Mo) alloying reinforcements on AA1200 substrate for corrosion improvement

    Popoola, API

    2011-10-01

    Full Text Available Poor corrosion performance of aluminium alloys in marine environment has been a subject of intensive research recently. Aluminium substrate was alloyed with a combination of two metallic powders (Cu + Mo) using an Nd: YAG solid state laser...

  6. In vitro corrosion behavior of Ti-O film deposited on fluoride-treated Mg-Zn-Y-Nd alloy

    Hou, S.S.; Zhang, R.R. [Materials Research Center, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450002 (China); Guan, S.K., E-mail: skguan@zzu.edu.cn [Materials Research Center, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450002 (China); Ren, C.X.; Gao, J.H.; Lu, Q.B.; Cui, X.Z. [Materials Research Center, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450002 (China)

    2012-02-01

    In this paper, a new composite coating was fabricated on magnesium alloy by a two-step approach, to improve the corrosion resistance and biocompatibility of Mg-Zn-Y-Nd alloy. First, fluoride conversion layer was synthesized on magnesium alloy surface by immersion treatment in hydrofluoric acid and then, Ti-O film was deposited on the preceding fluoride layer by magnetron sputtering. FE-SEM images revealed a smooth and uniform surface consisting of aggregated nano-particles with average size of 100 nm, and a total coating thickness of {approx}1.5 {mu}m, including an outer Ti-O film of {approx}250 nm. The surface EDS and XRD data indicated that the composite coating was mainly composed of crystalline magnesium fluoride (MgF{sub 2}), and non-crystalline Ti-O. Potentiodynamic polarization tests revealed that the composite coated sample have a corrosion potential (E{sub corr}) of -1.60 V and a corrosion current density (I{sub corr}) of 0.17 {mu}A/cm{sup 2}, which improved by 100 mV and reduced by two orders of magnitude, compared with the sample only coated by Ti-O. EIS results showed a polarization resistance of 3.98 k{Omega} cm{sup 2} for the Ti-O coated sample and 0.42 k{Omega} cm{sup 2} for the composite coated sample, giving an improvement of about 100 times. After 72 h immersion in SBF, widespread damage and deep corrosion holes were observed on the Ti-O coated sample surface, while the integrity of composite coating remained well after 7 d. In brief, the data suggested that single Ti-O film on degradable magnesium alloys was apt to become failure prematurely in corrosion environment. Ti-O film deposited on fluoride-treated magnesium alloys might potentially meet the requirements for future clinical magnesium alloy stent application.

  7. In vitro corrosion behavior of Ti-O film deposited on fluoride-treated Mg-Zn-Y-Nd alloy

    Hou, S.S.; Zhang, R.R.; Guan, S.K.; Ren, C.X.; Gao, J.H.; Lu, Q.B.; Cui, X.Z.

    2012-01-01

    In this paper, a new composite coating was fabricated on magnesium alloy by a two-step approach, to improve the corrosion resistance and biocompatibility of Mg-Zn-Y-Nd alloy. First, fluoride conversion layer was synthesized on magnesium alloy surface by immersion treatment in hydrofluoric acid and then, Ti-O film was deposited on the preceding fluoride layer by magnetron sputtering. FE-SEM images revealed a smooth and uniform surface consisting of aggregated nano-particles with average size of 100 nm, and a total coating thickness of ∼1.5 μm, including an outer Ti-O film of ∼250 nm. The surface EDS and XRD data indicated that the composite coating was mainly composed of crystalline magnesium fluoride (MgF 2 ), and non-crystalline Ti-O. Potentiodynamic polarization tests revealed that the composite coated sample have a corrosion potential (E corr ) of -1.60 V and a corrosion current density (I corr ) of 0.17 μA/cm 2 , which improved by 100 mV and reduced by two orders of magnitude, compared with the sample only coated by Ti-O. EIS results showed a polarization resistance of 3.98 kΩ cm 2 for the Ti-O coated sample and 0.42 kΩ cm 2 for the composite coated sample, giving an improvement of about 100 times. After 72 h immersion in SBF, widespread damage and deep corrosion holes were observed on the Ti-O coated sample surface, while the integrity of composite coating remained well after 7 d. In brief, the data suggested that single Ti-O film on degradable magnesium alloys was apt to become failure prematurely in corrosion environment. Ti-O film deposited on fluoride-treated magnesium alloys might potentially meet the requirements for future clinical magnesium alloy stent application.

  8. Investigation of the HA film deposited on the porous Ti6Al4V alloy prepared via additive manufacturing

    Surmeneva, M; Chudinova, E; Syrtanov, M; Surmenev, R; Koptioug, A

    2015-01-01

    This study is focused on the use of radio frequency magnetron sputtering to modify the surface of porous Ti6Al4V alloy fabricated via additive manufacturing technology. The hydroxyapatite (HA) coated porous Ti6Al4V alloy was studied in respect with its chemical and phase composition, surface morphology, water contact angle and hysteresis, and surface free energy. Thin nanocrystalline HA film was deposited while its structure with diamond-shaped cells remained unchanged. Hysteresis and water contact angle measurements revealed an effect of the deposited HA films, namely an increased water contact angle and contact angle hysteresis. The increase of the contact angle of the coating-substrate system compared to the uncoated substrate was attributed to the multiscale structure of the resulted surfaces. (paper)

  9. Characterization of Fe-based alloy coating deposited by supersonic plasma spraying

    Piao, Zhong-yu; Xu, Bin-shi; Wang, Hai-dou; Wen, Dong-hui

    2013-01-01

    Highlights: • Fe-based coating exhibited few oxides, high density and bond strength. • Amorphous/nanocrystalline phases were found in the coating. • Formation mechanism of excellent coating was investigated. -- Abstract: The objective of the present study is to characterize the Fe-based alloy coating deposited by the supersonic plasma spraying process. The condition of the melting particles was in situ monitored. The microstructure of the coating was examined by scanning electron microscope and high resolution transmission electron microscope. The phase composition was examined by X-ray diffraction. The microhardness and porosity were also measured, respectively. Results show the prepared coatings have excellent properties, such as few oxides, high microhardness and a low porosity amount. At the same time, a mass of amorphous/nanocrystalline phases was found in the coating. The mechanism of the formation of amorphous/nanocrystalline phases was investigated. The appropriate material composition of spraying material and flash set process of plasma spraying are the key factors. Moreover, the mechanism for oxidation resistance is also investigated, where the separation between melting metal and oxygen by the formation of SiO 2 films is the key factor

  10. Nanogrids and Beehive-Like Nanostructures Formed by Plasma Etching the Self-Organized SiGe Islands

    Chang, Yuan-Ming; Jian, Sheng-Rui; Juang, Jenh-Yih

    2010-09-01

    A lithography-free method for fabricating the nanogrids and quasi-beehive nanostructures on Si substrates is developed. It combines sequential treatments of thermal annealing with reactive ion etching (RIE) on SiGe thin films grown on (100)-Si substrates. The SiGe thin films deposited by ultrahigh vacuum chemical vapor deposition form self-assembled nanoislands via the strain-induced surface roughening (Asaro-Tiller-Grinfeld instability) during thermal annealing, which, in turn, serve as patterned sacrifice regions for subsequent RIE process carried out for fabricating nanogrids and beehive-like nanostructures on Si substrates. The scanning electron microscopy and atomic force microscopy observations confirmed that the resultant pattern of the obtained structures can be manipulated by tuning the treatment conditions, suggesting an interesting alternative route of producing self-organized nanostructures.

  11. Study of magnetism in Ni–Cr hardface alloy deposit on 316LN stainless steel using magnetic force microscopy

    Kishore, G.V.K.; Kumar, Anish, E-mail: anish@igcar.gov.in; Chakraborty, Gopa; Albert, S.K; Rao, B. Purna Chandra; Bhaduri, A.K.; Jayakumar, T.

    2015-07-01

    Nickel base Ni–Cr alloy variants are extensively used for hardfacing of austenitic stainless steel components in sodium cooled fast reactors (SFRs) to avoid self-welding and galling. Considerable difference in the compositions and melting points of the substrate and the Ni–Cr alloy results in significant dilution of the hardface deposit from the substrate. Even though, both the deposit and the substrate are non-magnetic, the diluted region exhibits ferromagnetic behavior. The present paper reports a systematic study carried out on the variations in microstructures and magnetic behavior of American Welding Society (AWS) Ni Cr–C deposited layers on 316 LN austenitic stainless steels, using atomic force microscopy (AFM) and magnetic force microscopy (MFM). The phase variations of the oscillations of a Co–Cr alloy coated magnetic field sensitive cantilever is used to quantitatively study the magnetic strength of the evolved microstructure in the diluted region as a function of the distance from the deposit/substrate interface, with the spatial resolution of about 100 nm. The acquired AFM/MFM images and the magnetic property profiles have been correlated with the variations in the chemical compositions in the diluted layers obtained by the energy dispersive spectroscopy (EDS). The study indicates that both the volume fraction of the ferromagnetic phase and its ferromagnetic strength decrease with increasing distance from the deposit/substrate interface. A distinct difference is observed in the ferromagnetic strength in the first few layers and the ferromagnetism is observed only near to the precipitates in the fifth layer. The study provides a better insight of the evolution of ferromagnetism in the diluted layers of Ni–Cr alloy deposits on stainless steel. - Highlights: • Study of evolution of ferromagnetism in Comonoy-6 deposit on austenitic steel. • Magnetic force microscopy (MFM) exhibited ferromagnetic matrix in first two layers. • The maximum MFM

  12. Development of an ion-beam sputtering system for depositing thin films and multilayers of alloys and compounds

    Gupta, Mukul; Gupta, Ajay; Phase, D.M.; Chaudhari, S.M.; Dasannacharya, B.A.

    2002-01-01

    An ion-beam sputtering (IBS) system has been designed and developed for preparing thin films and multilayers of various elements, alloys and compounds. The ion source used is a 3 cm diameter, hot-cathode Kaufman type 1.5 kV ion source. The system has been successfully tested with the deposition of various materials, and the deposition parameters were optimised for achieving good quality of thin films and multilayers. A systematic illustration of the versatility of the system to produce a variety of structures is done by depositing thin film of pure iron, an alloy film of Fe-Zr, a compound thin film of FeN, a multilayer of Fe-Ag and an isotopic multilayer of 57 FeZr/FeZr. Microstructural measurements on these films using X-ray and neutron reflectivity, atomic force microscopy (AFM), and X-ray diffraction are presented and discussed to reveal the quality of the microstructures obtained with the system. It is found that in general, the surface roughnesses of the film deposited by IBS are significantly smaller as compared to those for films deposited by e-beam evaporation. Further, the grain size of the IBS crystalline films is significantly refined as compared to the films deposited by e-beam evaporation. Grain refinement may be one of the reasons for reduced surface roughness. In the case of amorphous films, the roughness of the films does not increase appreciably beyond that of the substrate even after depositing thicknesses of several hundred angstroms

  13. Band structure analysis in SiGe nanowires

    Amato, Michele [' Centro S3' , CNR-Istituto Nanoscienze, via Campi 213/A, 41100 Modena (Italy); Dipartimento di Scienze e Metodi dell' Ingegneria, Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy); Palummo, Maurizia [European Theoretical Spectroscopy Facility (ETSF) (Italy); CNR-INFM-SMC, Dipartimento di Fisica, Universita di Roma, ' Tor Vergata' , via della Ricerca Scientifica 1, 00133 Roma (Italy); Ossicini, Stefano, E-mail: stefano.ossicini@unimore.it [' Centro S3' , CNR-Istituto Nanoscienze, via Campi 213/A, 41100 Modena (Italy) and Dipartimento di Scienze e Metodi dell' Ingegneria, Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy) and European Theoretical Spectroscopy Facility - ETSF (Italy) and Centro Interdipartimentale ' En and Tech' , Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy)

    2012-06-05

    One of the main challenges for Silicon-Germanium nanowires (SiGe NWs) electronics is the possibility to modulate and engine their electronic properties in an easy way, in order to obtain a material with the desired electronic features. Diameter and composition constitute two crucial ways for the modification of the band gap and of the band structure of SiGe NWs. Within the framework of density functional theory we present results of ab initio calculations regarding the band structure dependence of SiGe NWs on diameter and composition. We point out the main differences with respect to the case of pure Si and Ge wires and we discuss the particular features of SiGe NWs that are useful for future technological applications.

  14. Band structure analysis in SiGe nanowires

    Amato, Michele; Palummo, Maurizia; Ossicini, Stefano

    2012-01-01

    One of the main challenges for Silicon-Germanium nanowires (SiGe NWs) electronics is the possibility to modulate and engine their electronic properties in an easy way, in order to obtain a material with the desired electronic features. Diameter and composition constitute two crucial ways for the modification of the band gap and of the band structure of SiGe NWs. Within the framework of density functional theory we present results of ab initio calculations regarding the band structure dependence of SiGe NWs on diameter and composition. We point out the main differences with respect to the case of pure Si and Ge wires and we discuss the particular features of SiGe NWs that are useful for future technological applications.

  15. Converting hcp Mg-Al-Zn alloy into bcc Mg-Li-Al-Zn alloy by electrolytic deposition and diffusion of reduced lithium atoms in a molten salt electrolyte LiCl-KCl

    Lin, M.C.; Tsai, C.Y.; Uan, J.Y.

    2007-01-01

    A body-centered cubic (bcc) Mg-12Li-9Al-1Zn (wt.%) alloy was fabricated in air by electrolysis from LiCl-KCl molten salt at 500 deg. C. Electrolytic deposition of Li atoms on cathode (Mg-Al-Zn alloy) and diffusion of the Li atoms formed the bcc Mg-Li-Al-Zn alloy with 12 wt.% Li and only 0.264 wt.% K. Low K concentration in the bcc Mg alloy strip after the electrolysis process resulted from 47% atomic size misfit between K and Mg atoms and low solubility of K in Mg matrix

  16. Ordered Arrays of SiGe Islands from Low-Energy PECVD

    Chrastina D

    2010-01-01

    Full Text Available Abstract SiGe islands have been proposed for applications in the fields of microelectronics, optoelectronics and thermoelectrics. Although most of the works in literature are based on MBE, one of the possible advantages of low-energy plasma-enhanced chemical vapor deposition (LEPECVD is a wider range of deposition rates, which in turn results in the possibility of growing islands with a high Ge concentration. We will show that LEPECVD can be effectively used for the controlled growth of ordered arrays of SiGe islands. In order to control the nucleation of the islands, patterned Si (001 substrates were obtained by e-beam lithography (EBL and dry etching. We realized periodic circular pits with diameters ranging from 80 to 300 nm and depths from 65 to 75 nm. Subsequently, thin films (0.8–3.2 nm of pure Ge were deposited by LEPECVD, resulting in regular and uniform arrays of Ge-rich islands. LEPECVD allowed the use of a wide range of growth rates (0.01–0.1 nm s−1 and substrates temperatures (600–750°C, so that the Ge content of the islands could be varied. Island morphology was characterized by AFM, while μ-Raman was used to analyze the Ge content inside the islands and the composition differences between islands on patterned and unpatterned areas of the substrate.

  17. Mechanical Properties of TiTaHfNbZr High-Entropy Alloy Coatings Deposited on NiTi Shape Memory Alloy Substrates

    Motallebzadeh, A.; Yagci, M. B.; Bedir, E.; Aksoy, C. B.; Canadinc, D.

    2018-04-01

    TiTaHfNbZr high-entropy alloy (HEA) thin films with thicknesses of about 750 and 1500 nm were deposited on NiTi substrates by RF magnetron sputtering using TiTaHfNbZr equimolar targets. The thorough experimental analysis on microstructure and mechanical properties of deposited films revealed that the TiTaHfNbZr films exhibited amorphous and cauliflower-like structure, where grain size and surface roughness increased concomitant with film thickness. More importantly, the current findings demonstrate that the TiTaHfNbZr HEA films with mechanical properties of the same order as those of the NiTi substrate constitute promising biomedical coatings effective in preventing Ni release.

  18. Mechanical Properties of TiTaHfNbZr High-Entropy Alloy Coatings Deposited on NiTi Shape Memory Alloy Substrates

    Motallebzadeh, A.; Yagci, M. B.; Bedir, E.; Aksoy, C. B.; Canadinc, D.

    2018-06-01

    TiTaHfNbZr high-entropy alloy (HEA) thin films with thicknesses of about 750 and 1500 nm were deposited on NiTi substrates by RF magnetron sputtering using TiTaHfNbZr equimolar targets. The thorough experimental analysis on microstructure and mechanical properties of deposited films revealed that the TiTaHfNbZr films exhibited amorphous and cauliflower-like structure, where grain size and surface roughness increased concomitant with film thickness. More importantly, the current findings demonstrate that the TiTaHfNbZr HEA films with mechanical properties of the same order as those of the NiTi substrate constitute promising biomedical coatings effective in preventing Ni release.

  19. Thermal conductivity engineering of bulk and one-dimensional Si-Ge nanoarchitectures.

    Kandemir, Ali; Ozden, Ayberk; Cagin, Tahir; Sevik, Cem

    2017-01-01

    Various theoretical and experimental methods are utilized to investigate the thermal conductivity of nanostructured materials; this is a critical parameter to increase performance of thermoelectric devices. Among these methods, equilibrium molecular dynamics (EMD) is an accurate technique to predict lattice thermal conductivity. In this study, by means of systematic EMD simulations, thermal conductivity of bulk Si-Ge structures (pristine, alloy and superlattice) and their nanostructured one dimensional forms with square and circular cross-section geometries (asymmetric and symmetric) are calculated for different crystallographic directions. A comprehensive temperature analysis is evaluated for selected structures as well. The results show that one-dimensional structures are superior candidates in terms of their low lattice thermal conductivity and thermal conductivity tunability by nanostructuring, such as by diameter modulation, interface roughness, periodicity and number of interfaces. We find that thermal conductivity decreases with smaller diameters or cross section areas. Furthermore, interface roughness decreases thermal conductivity with a profound impact. Moreover, we predicted that there is a specific periodicity that gives minimum thermal conductivity in symmetric superlattice structures. The decreasing thermal conductivity is due to the reducing phonon movement in the system due to the effect of the number of interfaces that determine regimes of ballistic and wave transport phenomena. In some nanostructures, such as nanowire superlattices, thermal conductivity of the Si/Ge system can be reduced to nearly twice that of an amorphous silicon thermal conductivity. Additionally, it is found that one crystal orientation, [Formula: see text]100[Formula: see text], is better than the [Formula: see text]111[Formula: see text] crystal orientation in one-dimensional and bulk SiGe systems. Our results clearly point out the importance of lattice thermal conductivity

  20. Comparative study on structure, corrosion and hardness of Zn-Ni alloy deposition on AISI 347 steel aircraft material

    Gnanamuthu, RM. [Department of Chemical Engineering, College of Engineering, Kyung Hee University, 1732 Deogyeong-daero, Gihung, Yongin, Gyeonggi 446-701 (Korea, Republic of); Mohan, S., E-mail: sanjnamohan@yahoo.com [Central Electrochemical Research Institute, (CSIR), Karaikudi 630 006, Tamilnadu (India); Saravanan, G. [Central Electrochemical Research Institute, (CSIR), Karaikudi 630 006, Tamilnadu (India); Lee, Chang Woo, E-mail: cwlee@khu.ac.kr [Department of Chemical Engineering, College of Engineering, Kyung Hee University, 1732 Deogyeong-daero, Gihung, Yongin, Gyeonggi 446-701 (Korea, Republic of)

    2012-02-05

    Highlights: Black-Right-Pointing-Pointer Electrodeposition of Zn-Ni alloy on AISI 347 steel as an aircraft material has been carried out from various baths. Black-Right-Pointing-Pointer The effect of pulse duty cycle on thickness, current efficiency and hardness reached maximum values at 40% duty cycle and for 50 Hz frequencies average current density of 4 A dm{sup -2}. Black-Right-Pointing-Pointer The XRF characterizations of 88:12% Zn-Ni alloy provided excellent corrosion resistance. Black-Right-Pointing-Pointer It is found that Zn-Ni alloy on AISI 347 aircraft material has better structure and corrosion resistance by pulse electrodeposits from electrolyte-4. - Abstract: Zn-Ni alloys were electrodeposited on AISI 347 steel aircraft materials from various electrolytes under direct current (DCD) and pulsed electrodepositing (PED) techniques. The effects of pulse duty cycle on thickness, current efficiency and hardness of electrodeposits were studied. Alloy phases of the Zn-Ni were indexed by X-ray diffraction (XRD) techniques. Microstructural morphology, topography and elemental compositions were characterized using scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray fluorescence spectroscopy (XRF). The corrosion resistance properties of electrodeposited Zn-Ni alloy in 3.5% NaCl aqueous solution obtained by DCD and PED were compared using potentiodynamic polarization and electrochemical impedance spectroscopy (EIS) technique. Elemental analysis showed that 88% of Zn and 12% of Ni obtained from electrolyte-4 by PED technique at 40% duty cycle for 50 Hz frequencies having better corrosion resistance than that of deposits obtained from other electrolytes.

  1. ITO films deposited by rf-PERTE on unheated polymer substrates--properties dependence on In-Sn alloy composition

    Nunes de Carvalho, C.; Lavareda, G.; Fortunato, E.; Vilarinho, P.; Amaral, A.

    2004-01-01

    The study of the influence of different tin concentrations in the In-Sn alloy on the properties of indium tin oxide (ITO) thin films deposited by radio frequency (rf) plasma enhanced reactive thermal evaporation (rf-PERTE) onto flexible polymer and window glass substrates at room temperature is presented. The polymer substrate used is polyethylene terephthalate (PET). The tin concentration in the source alloy varied in the range 5-20 wt.%. The average thickness of the ITO films is of about 90 nm. Results show that ITO thin films deposited on PET from the evaporation of a 85%In:15%Sn alloy exhibit the following characteristics: an average visible transmittance of 80% and an electrical resistivity of 1.6x10 -3 Ω cm. On glass the value of the average visible transmittance increases (85%) and the resistivity decreases to 7.6x10 -4 Ω cm. The electrical properties of ITO films on PET are largely affected by the low carrier mobility

  2. Parameters optimization, microstructure and micro-hardness of silicon carbide laser deposited on titanium alloy

    Adebiyia, DI

    2016-06-01

    Full Text Available Silicon carbide (SiC), has excellent mechanical properties such as high hardness and good wear resistance, and would have been a suitable laser-coating material for titanium alloy to enhance the poor surface hardness of the alloy. However, SiC has...

  3. In Vitro Analysis of Electrophoretic Deposited Fluoridated Hydroxyapatite Coating on Micro-arc Oxidized AZ91 Magnesium Alloy for Biomaterials Applications

    Razavi, Mehdi; Fathi, Mohammadhossein; Savabi, Omid; Vashaee, Daryoosh; Tayebi, Lobat

    2015-03-01

    Magnesium (Mg) alloys have been recently introduced as a biodegradable implant for orthopedic applications. However, their fast corrosion, low bioactivity, and mechanical integrity have limited their clinical applications. The main aim of this research was to improve such properties of the AZ91 Mg alloy through surface modifications. For this purpose, nanostructured fluoridated hydroxyapatite (FHA) was coated on AZ91 Mg alloy by micro-arc oxidation and electrophoretic deposition method. The coated alloy was characterized through scanning electron microscopy, transmission electron microscopy, X-ray diffraction, in vitro corrosion tests, mechanical tests, and cytocompatibility evaluation. The results confirmed the improvement of the corrosion resistance, in vitro bioactivity, mechanical integrity, and the cytocompatibility of the coated Mg alloy. Therefore, the nanostructured FHA coating can offer a promising way to improve the properties of the Mg alloy for orthopedic applications.

  4. Atomistic simulations of thermal transport in Si and SiGe based materials: From bulk to nanostructures

    Savic, Ivana; Mingo, Natalio; Donadio, Davide; Galli, Giulia

    2010-03-01

    It has been recently proposed that Si and SiGe based nanostructured materials may exhibit low thermal conductivity and overall promising properties for thermoelectric applications. Hence there is a considerable interest in developing accurate theoretical and computational methods which can help interpret recent measurements, identify the physical origin of the reduced thermal conductivity, as well as shed light on the interplay between disorder and nanostructuring in determining a high figure of merit. In this work, we investigate the capability of an atomistic Green's function method [1] to describe phonon transport in several types of Si and SiGe based systems: amorphous Si, SiGe alloys, planar and nanodot Si/SiGe multilayers. We compare our results with experimental data [2,3], and with the findings of molecular dynamics simulations and calculations based on the Boltzmann transport equation. [1] I. Savic, N. Mingo, and D. A. Stewart, Phys. Rev. Lett. 101, 165502 (2008). [2] S.-M. Lee, D. G. Cahill, and R. Venkatasubramanian, Appl. Phys. Lett. 70, 2957 (1997). [3] G. Pernot et al., submitted.

  5. Corrosion behavior of AZ91 magnesium alloy treated by plasma immersion ion implantation and deposition in artificial physiological fluids

    Liu Chenglong; Xin Yunchang; Tian Xiubo; Chu, Paul K.

    2007-01-01

    Due to the good biocompatibility and tensile yield strength, magnesium alloys are promising in degradable prosthetic implants. The objective of this study is to investigate the corrosion behavior of surgical AZ91 magnesium alloy treated by aluminum, zirconium, and titanium plasma immersion ion implantation and deposition (PIII and D) at 10 kV in artificial physiological fluids. The surface layers show a characteristic intermixed layer and the outer surface are mainly composed of aluminum, zirconium or titanium oxide with a lesser amount of magnesium oxide. Comparing the three sets of samples, aluminum PIII and D significantly shifts the open circuit potential (OCP) to a more positive potential and improves the corrosion resistance at OCP

  6. The influence of Fe2+ concentration and deposition time on the corrosion resistance of the electrodeposited zinc–nickel–iron alloys

    M.M. Abou-Krisha

    2016-11-01

    Full Text Available Electrodeposition operating conditions for Zn–Ni–Fe alloys from sulfate baths and the corrosion resistance of the electrodeposited alloys were studied. The comparison between Zn–Ni and Zn–Ni–Fe alloys co-deposition revealed that the remarkable inhibition of Ni and Fe deposition takes place due to the presence of Zn2+ in the plating bath. The electrodeposition was performed on the steel substrate, under galvanostatic conditions, for varying Fe2+ bath concentrations and at different times. X-ray diffraction studies of the deposit showed the presence of Fe3Ni2 phase and γ-phase with a composition of Ni2Zn11. The obtained data also exposed that the corrosion resistance increases as a result of increasing Fe2+ concentration and deposition time. Investigation was carried out using cyclic voltammetry and galvastatic techniques for electrodeposition, while linear polarization resistance and anodic linear sweeping voltammetry techniques were used for corrosion study.

  7. Optimal conditions for the deposition of novel anticorrosive coatings by RF magnetron sputtering for aluminum alloy AA6082

    Brachetti-Sibaja, S.B.; Domínguez-Crespo, M.A.; Rodil, S.E.; Torres-Huerta, A.M.

    2014-01-01

    Highlights: • Non-conventional technique for improving the corrosion resistance of aluminum alloys. • Effect of the deposition parameters: power, substrate temperature and deposition time. • Changes in the crystallinity of the coatings are observed with the temperature. • The structure of these coatings is found to be dependent on the nature of the substrate. • La coatings can provide a better physical barrier to inhibit the corrosion attack. - Abstract: Cerium and lanthanum coatings were deposited on glass, silicon (1 0 0), and aluminum alloy by RF magnetron sputtering in which several experimental conditions such as power, substrate temperature, and deposition time were varied, using pure CeO 2 and La 2 O 3 targets. The effect of deposition parameters on the bonding structure, surface morphology and properties against corrosion of rare earth (RE) coatings formed on metallic substrate was reported. The microstructure and chemistry of the thin film were characterized by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), and X-ray photoelectron spectroscopy (XPS); whereas their use as corrosion resistant coatings was studied in aqueous NaCl solution (3.0 wt%) by using polarization curves. Variations in these properties were observed by increasing the substrate temperature which modifies the crystallinity of the rare earth coatings. XRD and XPS findings indicate that the cerium coatings are composed by CeO 2 and a significant quantity of Ce 2 O 3 due to oxygen deficiency in the sputtering chamber, whereas La 2 O 3 /La(OH) 3 and some La intermetallic compounds are detected in the lanthanum films. Variations in the E corr and I corr were found as a function of the thickness, texture, and morphology of the as-prepared coatings

  8. Low thermal budget surface preparation of Si and SiGe

    Abbadie, A.; Hartmann, J.M.; Holliger, P.; Semeria, M.N.; Besson, P.; Gentile, P.

    2004-01-01

    Using a two-step cleaning, we have investigated the low thermal budget surface preparation of Si and Si 1-x Ge x (x=0.2-0.33). It consists of an ex situ 'HF-last' wet-cleaning and an in situ low thermal budget H 2 bake in a reduced pressure-chemical vapor deposition reactor. Using secondary ion mass spectrometry, we have evaluated the effects of different H 2 bake temperatures (in between 750 and 850 deg. C for 2 min) on the removal efficiency of C, O and F atoms still present on the surface of Si and SiGe virtual substrates after the 'HF-last' wet-cleaning. We have then examined the impact of the (wet-cleaning+H 2 bake) combination on the surface cross-hatch of SiGe as-grown virtual substrates, focusing on the analysis, notably by atomic force microscopy, of the surface topography before and after the miscellaneous thermal treatments. In situ hydrogen baking steps in between 775 and 850 deg. C do not modify the surface morphology and roughness. An easy and rapid optical characterization method, i.e. the optical interferometry, is presented as well to monitor in line the morphological changes induced by such processing steps as chemical mechanical polishing, wet-cleaning, H 2 bake, etc. Despite the lower resolution of the optical profilometer, the surface roughness values coming from it have been correctly correlated with those obtained from AFM. An optimized 'HF-last' wet-cleaning using a diluted chemistry in conjunction with a H 2 bake at 800 deg. C for 2 min (775 deg. C, 2') is a good compromise for SiGe (Si) surface preparation

  9. The effect of metallic oxide deposition on the electrochemical behaviour of Al-Zn-Mg-Sn alloy in natural tropical seawater

    Din Yati, M. S.; Nazree Derman, Mohd; Isa, M. C.; Y Ahmad, M.; Yusoff, N. H. N.; Muhammad, M. M.; Nain, H.

    2014-06-01

    The potential of aluminium alloys as anode materials in cathodic protection system has been explored and a significant improvement has been achieved. However, for marine application, it is quite difficult to maintain continuous activation process due to passivation behavior of aluminum alloys. Therefore, to choose the best activation mechanism for aluminium alloy in marine environment, it has to be considered from various points such as alloy composition and surface treatment. This paper report the effect of metallic ruthenium oxide (RuO2) deposition on the surface of as-cast Al-Zn-Mg-Sn alloy and to study the effect of its presence on the electrochemical behavior using direct current (DC) electrochemical polarization and current capacity measurement. The morphology and topography of corroded surface were studied by the aid of scanning electron microscope (SEM) and confocal laser scanning microscope (CLSM) respectively. Results from this study showed that the presence of intermetallic compound (Mg2Sn) and also mixed metal oxide compound (Al2O3 and RuO2) on the alloy surface has been very useful in improving electrochemical reaction and charge transfer activities in chloride containing solution. This study also showed that RuO2 catalytic coating applied on the surface of Al-Zn-Mg-Sn alloy has slightly increased the corrosion current density compared to Al-Zn-Mg-Sn without RuO2. The corrosion morphology and topography of corroded surface of Al-Zn-Mg-Sn alloy deposited with RuO2 was found more uniform corrosion attack with the formation of porous and fibrous mud-like crack on outer layer. Based on surface morphology and 3D topographic studies, these features were believed to facilitate ionic species adsorption and diffusion through corrosion product layer at solution-alloy interface. Deposited RuO2 films also was found to increase of current efficiency by more than 10%.

  10. Influence of the particle morphology on the Cold Gas Spray deposition behaviour of titanium on aluminum light alloys

    Cinca, N.; Rebled, J.M.; Estradé, S.; Peiró, F.; Fernández, J.; Guilemany, J.M.

    2013-01-01

    Highlights: ► Study of the particle–substrate and particle–particle interfaces in the cold spray process. ► Use of irregular feedstock particles whereas normally FIB studies have been undergone for spherical particles. ► Deep Transmission Electron Microscopy characterization of the interfaces and within the particle. -- Abstract: The present work evaluates the deposition behaviour of irregular titanium powder particles impinged by Cold Gas Spraying onto an aluminium 7075-T6 alloy substrate. The influence of their irregular shape on the bonding phenomena, in particle–substrate and particle–particle interfaces are discussed in view of Transmission Electron Microscopy examinations of a Focused Ion Beam lift-out prepared sample. Key aspects will be the jetting-out, the occurrence of oxide layers and grain size refinement. Different structural morphologies could be featured; at the particle–substrate interface, both the aluminium alloy and the titanium side exhibit recrystallization. Titanium particles in intimate contact in small agglomerates during deposition, on the other hand, show grain refinement at their interfaces whereas the original structure is maintained outside those boundaries

  11. Numerical simulation of heat-transfer and insoluble corrosion product deposition in lead-bismuth eutectic alloy

    Yang Xu; Zhou Tao; Fang Xiaolu; Lin Daping; Ru Xiaolong

    2015-01-01

    As the primary coolant of ADS (accelerator driven sub-critical system), the safety of reactor will be threatened and the lifetime of the reactor will be shortened by appearing of the tiny particles in LBE (lead-bismuth eutectic) alloy. To this end, numerical simulation with the code of FLUENT was used to research the deposition distribution of insoluble corrosion products in rectangular channel. The standard k-ε model was selected to predict the turbulence variation in the rectangular channel. The discrete phase model (DPM) was used to track the trajectory of the particles. It is found that the deposition efficiency is positively correlated with the temperature difference between the fluid and cold wall. The near wall region with a high concentration of particulate matter and low temperature is in favor of particulate matter deposition on the wall. At the same time, the high turbulence kinetic near wall region is not conducive to the deposition of particulate matter. A secondary flow phenomenon occurs under the influence of boundary wall, namely that there are eight symmetrical regions in the radial direction. (authors)

  12. Microstructure and mechanical properties of spray-deposited Mg-12.55Al-3.33Zn-0.58Ca-1Nd alloy

    Bai Pucun; Dong Taishang; Hou Xiaohu; Zhao Chunwang; Xing Yongming

    2010-01-01

    A Mg-Al-Zn-Ca-Nd magnesium alloy was prepared by spray forming technology, and the spray-deposited alloy was subsequently hot-extruded with a reduction rate of 16:1 at 623 K. The mechanical properties of the extruded alloy were investigated, and the result shows that the spray-formed Mg alloy offers superior tensile strength with poor ductility. The morphologies, fracture characteristic and chemical compositions of the extruded alloy were then explored by scanning electron microscopy with energy dispersive spectrometer. Furthermore, microstructure of the extruded alloy was examined by X-ray diffractometry and transmission electron microscopy. The results indicate that the microstructure of the spray-deposited magnesium alloy consists of α-Mg and Al 2 Ca phases, and the Al 2 Ca compound is distributed along the grain boundaries of the primary α-Mg. Moreover, twin substructure is found to exist in microstructure of the Al 2 Ca phase, rare earth Nd in the Al 2 Ca phase in the form of solid solution.

  13. PECVD Tekniği ile Büyütülmüş İnce Filmlerde Oluşan Ge ve SiGe Nanokristallerin Geçirgen Elektron Mikroskobu (TEM) ,Raman ve Fotoışıma Spektroskopisi Teknikleri ile İncelenmesi

    Şahin, Bünyamin; Ağan, Sedat

    2009-01-01

    We report an experimental study, optical properties of Ge and SiGe nanocrystals in SiOx structures are investigated by using Transmission Electron Microscopy (TEM), Raman and Photlüminescence Spectroscopy techniques. Ge nanocrystals in silicon oxide thin films have been grown with different annealing time by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique. The aim of our work is to determine size and size distiributions Ge, SiGe nanocrystals in SiOx martix due to annealing process...

  14. Substrate Effects in Wideband SiGe HBT Mixer Circuits

    Johansen, Tom Keinicke; Vidkjær, Jens; Krozer, Viktor

    2005-01-01

    are also applied to predict short distance substrate coupling effects. Simulation results using extracted equivalent circuit models and substrate coupling networks are compared with experimental results obtained on a wideband mixer circuit implemented in a 0.35 μm, 60 GHz ft SiGe HBT BiCMOS process.......In this paper, the influence from substrate effects on the performance of wideband SiGe HBT mixer circuits is investigated. Equivalent circuit models including substrate networks are extracted from on-wafer test structures and compared with electromagnetic simulations. Electromagnetic simulations...

  15. Heavy Ion Current Transients in SiGe HBTs

    Pellish, Jonathan A.; Reed, Robert A.; Vizkelethy, Gyorgy; McMorrow, Dale; Ferlet-Cavrois, Veronique; Baggio, Jacques; Paillet, Philipe; Duhanel, Olivier; Phillips, Stanley D.; Sutton, Akil K.; hide

    2009-01-01

    Time-resolved ion beam induced charge reveals heavy ion response of IBM 5AM SiGe HBT: a) Position correlation[ b) Unique response for different bias schemes; c) Similarities to TPA pulsed-laser data. Heavy ion broad-beam transients provide more realistic device response: a) Feedback using microbeam data; b) Overcome issues of LET and ion range with microbeam. Both micro- and broad-beam data sets yield valuable input for TCAD simulations. Uncover detailed mechanisms for SiGe HBTs and other devices fabricated on lightly-doped substrates.

  16. Investigation of vanadium and nitride alloys thin layers deposited by PVD

    Nouveau C.

    2012-06-01

    Full Text Available In this work we present the technique of magnetron vapor deposition and the effect of several deposition parameters on the structural and morphological properties of prepared thin films. It was noted that the deposition time has an effect on the crystallinity, mechanical properties such as residual stress, roughness surface and the layer composition from target products. Studies were carried out on layers of vanadium (V and the nitride vanadium (VN.

  17. Visible and infrared emission from Si/Ge nanowires synthesized by metal-assisted wet etching.

    Irrera, Alessia; Artoni, Pietro; Fioravanti, Valeria; Franzò, Giorgia; Fazio, Barbara; Musumeci, Paolo; Boninelli, Simona; Impellizzeri, Giuliana; Terrasi, Antonio; Priolo, Francesco; Iacona, Fabio

    2014-02-12

    Multi-quantum well Si/Ge nanowires (NWs) were realized by combining molecular beam epitaxy deposition and metal-assisted wet etching, which is a low-cost technique for the synthesis of extremely dense (about 1011 cm-2) arrays of NWs with a high and controllable aspect ratio. In particular, we prepared ultrathin Si/Ge NWs having a mean diameter of about 8 nm and lengths spanning from 1.0 to 2.7 μm. NW diameter is compatible with the occurrence of quantum confinement effects and, accordingly, we observed light emission assignable to the presence of Si and Ge nanostructures. We performed a detailed study of the photoluminescence properties of the NWs, with particular attention to the excitation and de-excitation properties as a function of the temperature and of the excitation photon flux, evaluating the excitation cross section and investigating the presence of non-radiative phenomena. PACS: 61.46.Km; 78.55.-m; 78.67.Lt.

  18. Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures

    Dong, Y.

    2014-07-26

    Si-Ge interdiffusion and strain relaxation were studied in a metastable SiGe epitaxial structure. With Ge concentration profiling and ex-situ strain analysis, it was shown that during thermal anneals, both Si-Ge interdiffusion and strain relaxation occurred. Furthermore, the time evolutions of both strain relaxation and interdiffusion were characterized. It showed that during the ramp-up stage of thermal anneals at higher temperatures (800°C and 840°C), the degree of relaxation, R, reached a “plateau”, while interdiffusion was negligible. With the approximation that the R value is constant after the ramp-up stage, a quantitative interdiffusivity model was built to account for both the effect of strain relaxation and the impact of the relaxation induced dislocations, which gave good agreement with the experiment data.

  19. Anisotropic microstructure and superelasticity of additive manufactured NiTi alloy bulk builds using laser directed energy deposition

    Bimber, Beth A. [Department of Engineering Science and Mechanics, The Pennsylvania State University, 212 Earth-Engineering Sciences Building, University Park, PA 16802 (United States); Hamilton, Reginald F., E-mail: rfh13@psu.edu [Department of Engineering Science and Mechanics, The Pennsylvania State University, 212 Earth-Engineering Sciences Building, University Park, PA 16802 (United States); Keist, Jayme; Palmer, Todd A. [Applied Research Laboratory, The Pennsylvania State University, State College, PA 16804 (United States)

    2016-09-30

    The microstructure and superelasticity in additive manufactured NiTi shape memory alloys (SMAs) were investigated. Using elementally blended Ni and Ti powder feedstock, Ni-rich build coupons were fabricated via the laser-based directed energy deposition (LDED) technique. The build volumes were large enough to extract tensile and compressive test specimens from selected locations for spatially resolving microconstituents and the underlying stress-induced martensitic phase transformation (SIMT) morphology. In the as-deposited condition, X-ray diffraction identified the B2 atomic crystal structure of the austenitic parent phase in NiTi SMAs, and Ni{sub 4}Ti{sub 3} precipitates were the predominant microconstituent identified through scanning electron microscopy. The microstructure exhibited anisotropy, which was characterized by the Ni{sub 4}Ti{sub 3} precipitate morphology being coarsest nearest the substrate, while a finer morphology was observed farthest from the substrate. In-situ full-field deformation measurements calculated using digital image correlation confirmed that the SIMT predominately occurred in the finer precipitate morphology. Heat treatment reduced the degree of anisotropy, and DIC analysis revealed localized SIMT strains increased compared to the as-deposited condition.

  20. Self-forming Al oxide barrier for nanoscale Cu interconnects created by hybrid atomic layer deposition of Cu–Al alloy

    Park, Jae-Hyung; Han, Dong-Suk; Kang, You-Jin [Division of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Shin, So-Ra; Park, Jong-Wan, E-mail: jwpark@hanyang.ac.kr [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2014-01-15

    The authors synthesized a Cu–Al alloy by employing alternating atomic layer deposition (ALD) surface reactions using Cu and Al precursors, respectively. By alternating between these two ALD surface chemistries, the authors fabricated ALD Cu–Al alloy. Cu was deposited using bis(1-dimethylamino-2-methyl-2-butoxy) copper as a precursor and H{sub 2} plasma, while Al was deposited using trimethylaluminum as the precursor and H{sub 2} plasma. The Al atomic percent in the Cu–Al alloy films varied from 0 to 15.6 at. %. Transmission electron microscopy revealed that a uniform Al-based interlayer self-formed at the interface after annealing. To evaluate the barrier properties of the Al-based interlayer and adhesion between the Cu–Al alloy film and SiO{sub 2} dielectric, thermal stability and peel-off adhesion tests were performed, respectively. The Al-based interlayer showed similar thermal stability and adhesion to the reference Mn-based interlayer. Our results indicate that Cu–Al alloys formed by alternating ALD are suitable seed layer materials for Cu interconnects.

  1. Self-forming Al oxide barrier for nanoscale Cu interconnects created by hybrid atomic layer deposition of Cu–Al alloy

    Park, Jae-Hyung; Han, Dong-Suk; Kang, You-Jin; Shin, So-Ra; Park, Jong-Wan

    2014-01-01

    The authors synthesized a Cu–Al alloy by employing alternating atomic layer deposition (ALD) surface reactions using Cu and Al precursors, respectively. By alternating between these two ALD surface chemistries, the authors fabricated ALD Cu–Al alloy. Cu was deposited using bis(1-dimethylamino-2-methyl-2-butoxy) copper as a precursor and H 2 plasma, while Al was deposited using trimethylaluminum as the precursor and H 2 plasma. The Al atomic percent in the Cu–Al alloy films varied from 0 to 15.6 at. %. Transmission electron microscopy revealed that a uniform Al-based interlayer self-formed at the interface after annealing. To evaluate the barrier properties of the Al-based interlayer and adhesion between the Cu–Al alloy film and SiO 2 dielectric, thermal stability and peel-off adhesion tests were performed, respectively. The Al-based interlayer showed similar thermal stability and adhesion to the reference Mn-based interlayer. Our results indicate that Cu–Al alloys formed by alternating ALD are suitable seed layer materials for Cu interconnects

  2. A novel simple strategy for in situ deposition of apatite layer on AZ31B magnesium alloy for bone tissue regeneration

    Mousa, Hamouda M. [Department of Bionanosystem Engineering, Chonbuk National University, Jeonju, Jeonbuk 561-756 (Korea, Republic of); Department of Engineering Materials and Mechanical Design, Faculty of Engineering, South Valley University, Qena 83523 (Egypt); Lee, Do Hee [Department of Bionanosystem Engineering, Chonbuk National University, Jeonju, Jeonbuk 561-756 (Korea, Republic of); Park, Chan Hee, E-mail: biochan@jbnu.ac.kr [Department of Bionanosystem Engineering, Chonbuk National University, Jeonju, Jeonbuk 561-756 (Korea, Republic of); Division of Mechanical Design Engineering, Chonbuk National University, Jeonju, Jeonbuk 561-756 (Korea, Republic of); Kim, Cheol Sang, E-mail: chskim@jbnu.ac.kr [Department of Bionanosystem Engineering, Chonbuk National University, Jeonju, Jeonbuk 561-756 (Korea, Republic of); Division of Mechanical Design Engineering, Chonbuk National University, Jeonju, Jeonbuk 561-756 (Korea, Republic of)

    2015-10-01

    Graphical abstract: - Highlights: • Anodizing process was used for the surface modification of AZ31B magnesium alloy. • An appetite-like film was deposited on the surface of AZ31B magnesium alloy. • Ceramic film was investigated by XRD and XPS. • Nano-plates growth are observed though the implemented experimental design. • Significant increase in the substrate hardness and surface roughness was observed. - Abstract: In this study, for the first time, the degradation performance of AZ31B Mg alloy was tuned by an in situ deposition of apatite thin layer within a short time in one step. Using Taguchi method for experimental design, anodization process was designed under control conditions (time and voltage), and simulated body fluid (SBF) was used as the electrolyte to nucleate apatite-like compounds. The coated alloy was characterized through field emission scanning electron microscopy (FE-SEM), EDS, X-ray diffraction and XPS analysis. The results show that the applied voltage has a significant effect on the formation of apatite-like layers. Compared to the uncoated samples, microhardness and surface roughness of the coated samples showed remarkably different values. The potentiodynamic polarization results demonstrate that the polarization resistance of the anodized samples is higher than the substrate polarization resistance, thus improving the alloy corrosion resistant. Based on the experimental results, the proposed nanostructure apatite-like coating can offer a promising way to improve the biocompatibility and degradability properties of the Mg alloy for bone tissue regeneration.

  3. Development of graded Ni-YSZ composite coating on Alloy 690 by Pulsed Laser Deposition technique to reduce hazardous metallic nuclear waste inventory.

    Sengupta, Pranesh; Rogalla, Detlef; Becker, Hans Werner; Dey, Gautam Kumar; Chakraborty, Sumit

    2011-08-15

    Alloy 690 based 'nuclear waste vitrification furnace' components degrade prematurely due to molten glass-alloy interactions at high temperatures and thereby increase the volume of metallic nuclear waste. In order to reduce the waste inventory, compositionally graded Ni-YSZ (Y(2)O(3) stabilized ZrO(2)) composite coating has been developed on Alloy 690 using Pulsed Laser Deposition technique. Five different thin-films starting with Ni80YSZ20 (Ni 80 wt%+YSZ 20 wt%), through Ni60YSZ40 (Ni 60 wt%+YSZ 40 wt%), Ni40YSZ60 (Ni 40 wt%+YSZ 60 wt%), Ni20YSZ80 (Ni 20 wt%+YSZ 80 wt%) and Ni0YSZ100 (Ni 0 wt%+YSZ 100 wt%), were deposited successively on Alloy 690 coupons. Detailed analyses of the thin-films identify them as homogeneous, uniform, pore free and crystalline in nature. A comparative study of coated and uncoated Alloy 690 coupons, exposed to sodium borosilicate melt at 1000°C for 1-6h suggests that the graded composite coating could substantially reduced the chemical interactions between Alloy 690 and borosilicate melt. Copyright © 2011 Elsevier B.V. All rights reserved.

  4. Study of Si-Ge interdiffusion with phosphorus doping

    Cai, Feiyang; Anjum, Dalaver H.; Zhang, Xixiang; Xia, Guangrui

    2016-01-01

    Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

  5. Study of Si-Ge interdiffusion with phosphorus doping

    Cai, Feiyang

    2016-10-28

    Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

  6. Nanoparticles from Cu-Zn-Al shape memory alloys physically synthesized by ion milling deposition

    Pavon, Luis Alberto Lopez [Universidad Autonoma de Nuevo Leon (UANL), Nuevo Leon (Mexico); Cuellara, Enrique Lopez; Castro, Alejandro Torres; Cruza, Azael Martinez de la [Universidad Autonoma de Nuevo Leon (CIIDIT/UANL), Nuevo Leon (Mexico). Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia; Ballesteros, Carmen [Universidad Carlos III de Madrid, Madrid (Spain). Departamento de Fisica; Araujo, Carlos Jose de [Universidade Federal de Campina Grande (UFCG), Campina Grande, PB (Brazil). Departamento de Engenharia Mecanica

    2012-05-15

    In this research, an ion milling equipment was used to elaborate nanoparticles from Cu-Zn-Al alloys with shape memory effect. Two different compositions were used, target A: 75.22Cu-17.12Zn-7.66Al at % with an Ms of -9 deg C and target B: 76.18Cu-15.84Zn-7.98Al with an Ms of 20 degree C. Nanoparticles were characterized by High Resolution Transmission Electron Microscopy, Electron Diffraction and Energy Dispersive X-ray Spectroscopy. The obtained nanoparticles showed a small dispersion, with a size range of 3.2-3.5 nm. Their crystal structure is in good agreement with the bulk martensitic structure of the targets. In this sense, results on morphology, composition and crystal structure have indicated that it is possible to produce nanoparticles of CuZnAl shape memory alloys with martensitic structure in a single process using Ion Milling. (author)

  7. Nanoparticles from Cu-Zn-Al shape memory alloys physically synthesized by ion milling deposition

    Pavon, Luis Alberto Lopez; Cuellara, Enrique Lopez; Castro, Alejandro Torres; Cruza, Azael Martinez de la; Ballesteros, Carmen; Araujo, Carlos Jose de

    2012-01-01

    In this research, an ion milling equipment was used to elaborate nanoparticles from Cu-Zn-Al alloys with shape memory effect. Two different compositions were used, target A: 75.22Cu-17.12Zn-7.66Al at % with an Ms of -9 deg C and target B: 76.18Cu-15.84Zn-7.98Al with an Ms of 20 degree C. Nanoparticles were characterized by High Resolution Transmission Electron Microscopy, Electron Diffraction and Energy Dispersive X-ray Spectroscopy. The obtained nanoparticles showed a small dispersion, with a size range of 3.2-3.5 nm. Their crystal structure is in good agreement with the bulk martensitic structure of the targets. In this sense, results on morphology, composition and crystal structure have indicated that it is possible to produce nanoparticles of CuZnAl shape memory alloys with martensitic structure in a single process using Ion Milling. (author)

  8. Study of the electroplating mechanism and physicochemical proprieties of deposited Ni-W-Silicate composite alloy

    Sassi, W.; Dhouibi, L.; Berçot, P.; Rezrazi, M.; Triki, E.

    2014-01-01

    In this work, layers based on Nickel-Tungsten (Ni-W) were electroplated from citrate-ammonia bath with and without silicate addition. Firstly, Electrochemical Quartz Crystal Microbalance (EQCM) and Global Discharge Optical Emission Spectroscopy (GDOES) were used to investigate the electroplating mechanism of both coatings. The gain mass was 14 and 4.13 μg cm −2 for Ni-W-Sil and Ni-W coatings, respectively. Secondly, the morphology of the composite alloy shows a smooth and homogenous surface with compact cauliflower like-structure identified as silicate incorporation. Finally, after a long immersion into chloride solution, Ni-W-Sil composite film showed a good surface stability and a remarkable mechanical hardness. These proprieties enhanced the electrochemical behavior of the composite alloy

  9. Cavitation Erosion of Electro Spark Deposited Nitinol vs. Stellite Alloy on Stainless Steel Substrate

    2015-07-15

    lower proportion of carbon. The lower carbon content of SS-316L allows lower carbide precipitation for welding . Online Metals SS-2205 Duplex ...erosion, per ASTM G32. As a comparison, a known erosion-resistant, weld -friendly alloy called Stellite 6® was ESD’d and its cavitation erosion resistance...Microscopy was conducted to examine the metallurgical bond established by the ESD process. As a comparison, a known erosion resistant, weld

  10. TiO2 Deposition on AZ31 Magnesium Alloy Using Plasma Electrolytic Oxidation

    Leon White

    2013-01-01

    Full Text Available Plasma electrolytic oxidation (PEO has been used in the past as a useful surface treatment technique to improve the anticorrosion properties of Mg alloys by forming protective layer. Coatings were prepared on AZ31 magnesium alloy in phosphate electrolyte with the addition of TiO2 nanoparticles using plasma electrolytic oxidation (PEO. This present work focuses on developing a TiO2 functional coating to create a novel electrophotocatalyst while observing the surface morphology, structure, composition, and corrosion resistance of the PEO coating. Microstructural characterization of the coating was investigated by X-ray diffraction (XRD and scanning electron microscopy (SEM followed by image analysis and energy dispersive spectroscopy (EDX. The corrosion resistance of the PEO treated samples was evaluated with electrochemical impedance spectroscopy (EIS and DC polarization tests in 3.5 wt.% NaCl. The XRD pattern shows that the components of the oxide film include Mg from the substrate as well as MgO and Mg2TiO4 due to the TiO2 nanoparticle addition. The results show that the PEO coating with TiO2 nanoparticles did improve the corrosion resistance when compared to the AZ31 substrate alloy.

  11. Comparing nanostructured hydroxyapatite coating on AZ91 alloy samples via sol-gel and electrophoretic deposition for biomedical applications.

    Rojaee, Ramin; Fathi, Mohammadhossein; Raeissi, Keyvan

    2014-12-01

    Magnesium is one of the most critical elements in hard tissues regeneration and therefore causes speeding up the restoration of harmed bones, while high deterioration rate of magnesium in body fluid restricts it to be used as biodegradable implants. Alloying magnesium with some relatively nobler metals such as aluminium, zinc, rare earth elements, magnesium-bioceramics composites, and surface modification techniques are some of the routes to control magnesium corrosion rate. In this study AZ91 magnesium alloy had been coated by nanostructured hydroxyapatite via sol-gel dip coating and electrophoretical methods to survey the final barricade properties of the obtained coatings. In order to perform electrophoretic coating, powders were prepared by sol-gel method, and then the powders deposited on substrates utilizing direct current electricity. Zeta potentials of the electrophoresis suspensions were measured to determine a best mode for good quality coatings. Transmission Electron Microscopy (TEM), and Scanning Electron Microscopy (SEM) were used to confirm nanoscale dimension, and the uniformity of the nanostructured hydroxyapatite coating, respectively. Fourier Transform-Infrared and X-ray diffraction analysis were utilized for functional group and phase structure evaluation of the prepared coatings, correspondingly. Electrochemical corrosion tests were performed in SBF at 37±1 (°)C which revealed considerable increase in corrosion protection resistivity and corrosion current density for electrophoretic coated specimens versus sol-gel coated specimens. Results showed that both sol-gel and electrophoretical techniques seem to be suitable to coat magnesium alloys for biomedical applications but electrophoretic coating technique is a better choice due to the more homogeneity and more crystalline structure of the coating.

  12. On the mechanical and electrical properties of copper-silver and copper-silver-zirconium alloys deposits manufactured by cold spray

    Coddet, Pierre; Verdy, Christophe; Coddet, Christian; Debray, François

    2016-01-01

    In this work, several copper alloy deposits were manufactured by cold spray with helium as accelerating and carrier gas. Electrical conductivity was measured to establish the potential of cold spray as a manufacturing process for high strength (>500 MPa) and high conductivity (>90% IACS) copper alloys. The deposits which are characterized by a low oxygen content (<200 ppm) and a low porosity level (<0.1%) present yield strength values up to about 700 MPa and electrical conductivity values up to 58.2 MS/m (100.3% IACS). Results show that, even if a compromise has to be made between the properties according to the objectives of the application, this additive manufacturing route appears suitable for the production of large copper alloys parts with high mechanical properties and high electrical and thermal conductivity. The role of alloy composition and post heat treatments on the strength and conductivity of the deposits was especially considered in this work. Cold spray deposits properties were finally compared with those obtained with other manufacturing routes.

  13. On the mechanical and electrical properties of copper-silver and copper-silver-zirconium alloys deposits manufactured by cold spray

    Coddet, Pierre, E-mail: pierre-laurent.coddet@univ-orleans.fr [Laboratoire National des Champs Magnétiques Intenses (LNCMI – CNRS-UPS-INSA-UJF), 25 Rue des Martyrs, 38042 Grenoble (France); Verdy, Christophe; Coddet, Christian [UTBM, Site de Sévenans, 90010 Belfort Cedex (France); Debray, François [Laboratoire National des Champs Magnétiques Intenses (LNCMI – CNRS-UPS-INSA-UJF), 25 Rue des Martyrs, 38042 Grenoble (France)

    2016-04-26

    In this work, several copper alloy deposits were manufactured by cold spray with helium as accelerating and carrier gas. Electrical conductivity was measured to establish the potential of cold spray as a manufacturing process for high strength (>500 MPa) and high conductivity (>90% IACS) copper alloys. The deposits which are characterized by a low oxygen content (<200 ppm) and a low porosity level (<0.1%) present yield strength values up to about 700 MPa and electrical conductivity values up to 58.2 MS/m (100.3% IACS). Results show that, even if a compromise has to be made between the properties according to the objectives of the application, this additive manufacturing route appears suitable for the production of large copper alloys parts with high mechanical properties and high electrical and thermal conductivity. The role of alloy composition and post heat treatments on the strength and conductivity of the deposits was especially considered in this work. Cold spray deposits properties were finally compared with those obtained with other manufacturing routes.

  14. Structure and composition of layers of Ni-Co-Mn-In Heusler alloys obtained by pulsed laser deposition

    Wisz, Grzegorz; Sagan, Piotr; Stefaniuk, Ireneusz; Cieniek, Bogumil; Maziarz, Wojciech; Kuzma, Marian

    2017-01-01

    In present work we were analysing thin layers of Ni-Co-Mn-In alloys, grown by pulsed laser deposition method (PLD) on Si, NaCl and glass substrates. For target ablation the second harmonics of YAG:Nd 3+ laser was used. The target had the composition Ni 45 Co 5 Mn 34.5 In 14.5 . The morphology of the layers and composition were studied by electron microscopy TESCAN Vega3 equipped with microanalyzer EDS – Easy EdX system working with Esprit Bruker software. The X-ray diffraction measurements (XRD), performed on spectrometer Bruker XRD D8 Advance system, reveals Ni 2 -Mn-In cubic phase having lattice constant a = 6.02Å.

  15. Electrochemical deposition of gold-platinum alloy nanoparticles on an indium tin oxide electrode and their electrocatalytic applications

    Song Yan; Ma Yuting; Wang Yuan [Department of Chemistry, Soochow University, Suzhou, Jiangsu 215123 (China); Di Junwei, E-mail: djw@suda.edu.c [Department of Chemistry, Soochow University, Suzhou, Jiangsu 215123 (China); Tu Yifeng [Department of Chemistry, Soochow University, Suzhou, Jiangsu 215123 (China)

    2010-07-01

    Gold-platinum (Au-Pt) hybrid nanoparticles (Au-PtNPs) were successfully deposited on an indium tin oxide (ITO) surface using a direct electrochemical method. The resulting nanoparticles were characterized by scanning electron microscopy (SEM), UV-vis spectroscopy, X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), and electrochemical methods. It was found that the size of the Au-PtNPs depends on the number of electrodeposition cycles. Au-PtNPs obtained by 20 electrodeposition cycles had a cauliflower-shaped structure with an average diameter of about 60 nm. These Au-PtNPs exhibited alloy properties. Electrochemical measurements showed that the charge transfer resistivity was significantly decreased for the Au-PtNPs/ITO electrode. Additionally, the Au-PtNPs displayed an electrocatalytic activity for nitrite oxidation and oxygen reduction. The Au-PtNPs/ITO electrodes reported herein could possibly be used as electrocatalysts and sensors.

  16. Characterization on the coatings of Ni-base alloy with nano- and micron-size Sm2O3 addition prepared by laser deposition

    Zhang Shihong; Li Mingxi; Yoon, Jae Hong; Cho, Tong Yul

    2008-01-01

    The coating materials are the powder mixture of micron-size Ni-base alloy powders with both 1.5 wt.% micron-size and nano-size Sm 2 O 3 powders, which are prepared on Q235 steel plate by 2.0 kW CO 2 laser deposition. The results indicate that with rare earth oxide Sm 2 O 3 addition, the width of planar crystallization is smaller than that of the Ni-base alloy coatings. Micron- and nano-Sm 2 O 3 /Ni-base alloy coatings have similar microstructure showing the primary phase of γ-Ni dendrite and eutectic containing γ-Ni and Cr 23 C 6 phases. However, compared to micron-Sm 2 O 3 /Ni-base alloy, preferred orientation of γ-Ni dendrite of nano-Sm 2 O 3 /Ni-base alloy is weakened. Planar crystal of several-μm thickness is first grown and then dendrite growth is observed at 1.5% micron-Sm 2 O 3 /Ni-base alloy coating whereas equiaxed dendrite is grown at 1.5% nano-Sm 2 O 3 /Ni-base alloy coating. Hardness and wear resistance of the coating improves with decreasing Sm 2 O 3 size from micron to nano. The improvement on tribological property of nano-Sm 2 O 3 /Ni-base alloy over micron-Sm 2 O 3 /Ni-base alloy coatings can be attributed to the better resistance of equiaxed dendrite to adhesion interactions during the wear process. In 6 M HNO 3 solution, the corrosion resistance is greatly improved with nano-Sm 2 O 3 addition since the decrease of corrosion ratio along grain-boundary in nano-Sm 2 O 3 /Ni-base alloy coating contributes to harmonization of corrosion potential

  17. Oxidation behavior of NiCoCrAlY coatings deposited by double-Glow plasma alloying

    Cui, Shiyu; Miao, Qiang; Liang, Wenping; Li, Baiqiang

    2018-01-01

    The NiCoCrAlY coatings were deposited on the Inconel 718 alloy substrates by a novel method called double-glow plasma alloying (DG). The phases and microstructure of the coatings were investigated by X-ray diffraction analysis while their chemical composition was analyzed using scanning electron microscopy. The morphology of the NiCoCrAlY coatings was typical of coatings formed by DG, with their structure consisting of uniform submicron-sized grains. Further, the coatings showed high adhesion strength (critical load >46 N). In addition, the oxidation characteristics of the coatings and the substrate were examined at three different temperatures (850, 950, and 1050 °C) using a muffle furnace. The coatings showed a lower oxidation rate, which was approximately one-tenth of that of the substrate. Even after oxidation for 100 h, the Al2O3 phase was the primary phase in the surface coating (850 °C), with the thickness of the oxide film increasing to 0.65 μm at 950 °C. When the temperature was increased beyond 1050 °C, the elemental Al and Ni were consumed in the formation of the oxide scale, which underwent spallation at several locations. The oxidation products of Cr, which were produced in large amounts and had a prism-like structure, controlled the subsequent oxidation behavior at the surface.

  18. Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11%

    Hart, John; Adam, Thomas; Kim, Yihwan; Huang, Yi-Chiau; Reznicek, Alexander; Hazbun, Ramsey; Gupta, Jay; Kolodzey, James

    2016-03-01

    Pseudomorphic GeSn layers with Sn atomic percentages between 4.5% and 11.3% were grown by chemical vapor deposition using digermane and SnCl4 precursors on Ge virtual substrates grown on Si. The layers were characterized by x-ray diffraction rocking curves and reciprocal space maps. Photoconductive devices were fabricated, and the dark current was found to increase with Sn concentration. The responsivity of the photoconductors was measured at a wavelength of 1.55 μm using calibrated laser illumination at room temperature and a maximum value of 2.7 mA/W was measured for a 4.5% Sn device. Moreover, the responsivity for higher Sn concentration was found to increase with decreasing temperature. Spectral photoconductivity was measured using Fourier transform infrared spectroscopy. The photoconductive absorption edge continually increased in wavelength with increasing tin percentage, out to approximately 2.4 μm for an 11.3% Sn device. The direct band gap was extracted using Tauc plots and was fit to a bandgap model accounting for layer strain and Sn concentration. This direct bandgap was attributed to absorption from the heavy-hole band to the conduction band. Higher energy absorption was also observed, which was thought to be likely from absorption in the light-hole band. The band gaps for these alloys were plotted as a function of temperature. These experiments show the promise of GeSn alloys for CMOS compatible short wave infrared detectors.

  19. Deposition of CuIn(Se,S)2 thin films by sulfurization of selenized Cu/In alloys

    Sheppard, C.J.; Alberts, V.; Bekker, W.J.

    2004-01-01

    The relatively small band gap values (close to 1eV) of CuInSe 2 thin films limits the conversion efficiencies of completed CuInSe 2 /CdS/ZnO solar cell devices. In the case of traditional two-stage growth techniques, limited success has been achieved to increase the band gap by substituting indium with gallium. In this study, sputtered copper-indium alloys were exposed to a H 2 Se/Ar atmosphere under defined conditions in order to produce partially reacted CuInSe 2 structures. These films were subsequently exposed to a H 2 S/Ar atmosphere to produce monophasic CuIn(Se, S) 2 quaternary alloys. The homogeneous incorporation of S into CuInSe 2 led to a systematic shift in the lattice parameters and band gap of the ab- sorber films. From these studies optimum selenization/sulfurization conditions were determined for the deposition of homogeneous CuIn(Se,S) 2 thin films with an optimum band gap values between 1.15 and 1.2 eV. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Potentiostatic pulse-deposition of calcium phosphate on magnesium alloy for temporary implant applications--an in vitro corrosion study.

    Kannan, M Bobby; Wallipa, O

    2013-03-01

    In this study, a magnesium alloy (AZ91) was coated with calcium phosphate using potentiostatic pulse-potential and constant-potential methods and the in vitro corrosion behaviour of the coated samples was compared with the bare metal. In vitro corrosion studies were carried out using electrochemical impedance spectroscopy and potentiodynamic polarization in simulated body fluid (SBF) at 37 °C. Calcium phosphate coatings enhanced the corrosion resistance of the alloy, however, the pulse-potential coating performed better than the constant-potential coating. The pulse-potential coating exhibited ~3 times higher polarization resistance than that of the constant-potential coating. The corrosion current density obtained from the potentiodynamic polarization curves was significantly less (~60%) for the pulse-deposition coating as compared to the constant-potential coating. Post-corrosion analysis revealed only slight corrosion on the pulse-potential coating, whereas the constant-potential coating exhibited a large number of corrosion particles attached to the coating. The better in vitro corrosion performance of the pulse-potential coating can be attributed to the closely packed calcium phosphate particles. Copyright © 2012 Elsevier B.V. All rights reserved.

  1. The influences of anneal temperature and cooling rate on microstructure and tensile properties of laser deposited Ti–4Al–1.5Mn titanium alloy

    Tian, X.J.; Zhang, S.Q.; Wang, H.M.

    2014-01-01

    Highlights: • We study the heat treatment parameters of laser deposited near-α titanium alloy. • Microstructure/tensile property relationships are demonstrated and discussed. • Higher cooling rate leads to finer microstructure and higher strength. • Higher anneal temperature promotes strength without ductility obviously decreased. - Abstract: As a metal near-net-shape manufacturing technology, direct laser fabrication has a great potential to reduce costs and delivery time and received an intense attention in the field of titanium alloy aerospace components fabrications. However, the laser deposited titanium alloys usually have equivalent strength and lower ductility compared to the wrought counterparts due to their lamellar microstructure. To investigate the responses of laser deposit titanium alloy Ti–4Al–1.5Mn to anneal parameters, various anneal temperatures and cooling rates were applied in this study. Microstructures were examined by Optical Microscope (OM) and Scanning Electron Microscope (SEM). Microhardness test and room temperature tensile tests were employed to evaluate the tensile properties of the as-deposited and annealed specimens. Results show that air cooling from the α + β phase region generates a microstructure composed of coarse primary α plates and fine lamellar transformed β, while water quenching produces similar but much finer microstructure. Moreover, higher cooling rate generates more area fraction of fine transformed β. With increasing anneal temperature, the ultimate tensile strength and yield strength increase for both cooling methods. Moreover, higher cooling rate leads to higher strength as expected. It is worth noting that both the strength and ductility of the laser deposited alloy improved by water quenched from the α + β duplex phase region. The improved tensile properties were mainly owing to the fine lamellar transformed β in the special bimodal microstructure

  2. Effects of Preprocessing on Multi-Direction Properties of Aluminum Alloy Cold-Spray Deposits

    Rokni, M. R.; Nardi, A. T.; Champagne, V. K.; Nutt, S. R.

    2018-05-01

    The effects of powder preprocessing (degassing at 400 °C for 6 h) on microstructure and mechanical properties of 5056 aluminum deposits produced by high-pressure cold spray were investigated. To investigate directionality of the mechanical properties, microtensile coupons were excised from different directions of the deposit, i.e., longitudinal, short transverse, long transverse, and diagonal and then tested. The results were compared to properties of wrought 5056 and the coating deposited with as-received 5056 Al powder and correlated with the observed microstructures. Preprocessing softened the particles and eliminated the pores within them, resulting in more extensive and uniform deformation upon impact with the substrate and with underlying deposited material. Microstructural characterization and finite element simulation indicated that upon particle impact, the peripheral regions experienced more extensive deformation and higher temperatures than the central contact zone. This led to more recrystallization and stronger bonding at peripheral regions relative to the contact zone area and yielded superior properties in the longitudinal direction compared with the short transverse direction. Fractography revealed that crack propagation takes place along the particle-particle interfaces in the transverse directions (caused by insufficient bonding and recrystallization), whereas through the deposited particles, fracture is dominant in the longitudinal direction.

  3. Micromachined single-level nonplanar polycrystalline SiGe thermal microemitters for infrared dynamic scene projection

    Malyutenko, V. K.; Malyutenko, O. Yu.; Leonov, V.; Van Hoof, C.

    2009-05-01

    The technology for self-supported membraneless polycrystalline SiGe thermal microemitters, their design, and performance are presented. The 128-element arrays with a fill factor of 88% and a 2.5-μm-thick resonant cavity have been grown by low-pressure chemical vapor deposition and fabricated using surface micromachining technology. The 200-nm-thick 60×60 μm2 emitting pixels enforced with a U-shape profile pattern demonstrate a thermal time constant of 2-7 ms and an apparent temperature of 700 K in the 3-5 and 8-12 μm atmospheric transparency windows. The application of the devices to the infrared dynamic scene simulation and their benefit over conventional planar membrane-supported emitters are discussed.

  4. Investigation of photocatalytic activity of titanium dioxide coating deposited on aluminium alloy substrate by plasma technique

    Daviðsdóttir, Svava; Soyama, Juliano; Dirscherl, Kai

    2011-01-01

    . Literature consists of large number of publications on titanium dioxide coating for self-cleaning applications, with glass as the main substrate. Only little work is available on TiO2 coating of metallic alloys used for engineering applications. Engineering materials, such as light-weight aluminium and steel...... have wide spread technological applications, where a combination of self-cleaning properties has a huge business potential. The results presented in this paper demonstrate superior photocatalytic properties of TiO2 coated aluminium compared to nano-scale TiO2 coating on glass substrate. The thickness...

  5. Laser surface melting of 10 wt% Mo alloyed hardfacing Stellite 12 plasma transferred arc deposits: Structural evolution and high temperature wear performance

    Dilawary, Shaikh Asad Ali; Motallebzadeh, Amir; Afzal, Muhammad; Atar, Erdem; Cimenoglu, Huseyin

    2018-05-01

    Laser surface melting (LSM) process has been applied on the plasma transferred arc (PTA) deposited Stellite 12 and 10 wt% Mo alloyed Stellite 12 in this study. Following the LSM process, structural and mechanical property comparison of the LSM'ed surfaces has been made. Hardness of the LSM'ed surfaces was measured as 549 HV and 623 HV for the Stellite 12 and Stellite 12 + 10 wt% Mo deposits, respectively. Despite their different hardness and structural features, the LSM'ed surfaces exhibited similar tribological performance at room temperature (RT), where fatigue wear mechanism operates. However, the wear at 500 °C promotes tribo-oxide layer formation whose composition depended on the alloying with Mo. Thus, addition of 10 wt% Mo into Stellite 12 PTA deposit has remarkably enhanced the high temperature wear performance of the LSM'ed surface as a result of participation of complex oxide (CoMoO4) in tribo-oxide layer.

  6. Sulfur passivation for the formation of Si-terminated Al{sub 2}O{sub 3/}SiGe(0 0 1) interfaces

    Sardashti, Kasra [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, CA (United States); Hu, Kai-Ting [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States); Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, CA (United States); Tang, Kechao [Department of Materials Science and Engineering, Stanford University, CA (United States); Park, Sangwook; Kim, Hyonwoong [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, CA (United States); Madisetti, Shailesh [Department of Nanoscale Science and Engineering, University at Albany—State University of New York, Albany, NY (United States); McIntyre, Paul [Department of Materials Science and Engineering, Stanford University, CA (United States); Oktyabrsky, Serge [Department of Nanoscale Science and Engineering, University at Albany—State University of New York, Albany, NY (United States); Siddiqui, Shariq; Sahu, Bhagawan [TD Research, GLOBALFOUNDRIES USA, Inc., Albany, NY (United States); Yoshida, Noami; Kachian, Jessica [Applied Materials, Inc., Santa Clara, CA (United States); Kummel, Andrew, E-mail: akummel@ucsd.edu [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, CA (United States)

    2016-03-15

    Graphical abstract: - Highlights: • Effect of wet sulfur passivation on the electrical properties of Al{sub 2}O{sub 3}/SiGe(0 0 1) interfaces has been determined. • EOT of 2.1 nm has been achieved for ALD Al{sub 2}O{sub 3} deposited directly on SiGe(0 0 1) surfaces. • Sulfur passivation has been found to passivate the Al{sub 2}O{sub 3} interface with Si−O−Al bonds. • Sulfur passivation is found to significantly reduce the GeO{sub x} or Ge−O−Al content at the Al{sub 2}O{sub 3}/SiGe interface therefore improving the reliability. • Sulfur passivation extends the surface stability prior to oxide ALD to up to an hour with no dramatic change in D{sub it}, C{sub ox} or V{sub FB} of the resulting devices. - Abstract: Sulfur passivation is used to electrically and chemically passivate the silicon–germanium (SiGe) surfaces before and during the atomic layer deposition (ALD) of aluminum oxide (Al{sub 2}O{sub 3}). The electrical properties of the interfaces were examined by variable frequency capacitance–voltage (C–V) spectroscopy. Interface compositions were determined by angle-resolved X-ray photoelectron spectroscopy (AR-XPS). The sulfur adsorbs to a large fraction of surface sites on the SiGe(0 0 1) surface, protecting the surface from deleterious surface reactions during processing. Sulfur passivation (a) improved the air stability of the cleaned surfaces prior to ALD, (b) increased the stability of the surface during high-temperature deposition, and (c) increased the Al{sub 2}O{sub 3} ALD nucleation density on SiGe, thereby lowering the leakage current. S passivation suppressed formation of Ge−O bonds at the interface, leaving the majority of the Al{sub 2}O{sub 3}–SiGe interface terminated with direct Si−O−Al bonding.

  7. Mechanical and tribological properties of Ti-containing carbon nanocomposite coatings deposited on TiAlV alloys

    Emanuel Santos Júnior

    2010-12-01

    Full Text Available Ti-doped carbon coatings were deposited on TiAlV alloys by reactive dc-magnetron sputtering in Ar/CH4 mixed gas. When Ar flow increases the incorporation of Ti into films raises while the concentration of C decreases. The formed nanometric TiC crystals were more noticeable for coatings deposited with higher Ar flows. Hardness (H and elastic modulus (E of coatings were measured by nanoindentation. H values were in the range of 8.8-15.9 GPa and E of 53.4-113.7 GPa. Higher values for H and E were obtained for films containing larger amount of TiC-phase. The presence of TiC crystals increased the coefficient of friction (COF from 0.07 to 0.28 in scratch tests. Tribological experiments were carried out by using a pin-on-disk apparatus in air and in liquid. COF values ranged from 0.10 to 0.50 for tests in air. Despite of presenting higher COF, tests performed in liquid resulted in less pronounced wear tracks.

  8. Epitaxial growth of Si1−xGex alloys and Ge on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition without substrate heating

    Ueno, Naofumi; Sakuraba, Masao; Murota, Junichi; Sato, Shigeo

    2014-01-01

    By using electron-cyclotron-resonance (ECR) Ar-plasma chemical vapor deposition (CVD) without substrate heating, the epitaxial growth process of Si 1−x Ge x alloy and Ge films deposited directly on dilute-HF-treated Si(100) was investigated. From the reflection high energy electron diffraction patterns of the deposited Si 1−x Ge x alloy (x = 0.50, 0.75) and Ge films on Si(100), it is confirmed that epitaxial growth can be realized without substrate heating, and that crystallinity degradation at larger film thickness is observed. The X-ray diffraction peak of the epitaxial films reveals the existence of large compressive strain, which is induced by lattice matching with the Si(100) substrate at smaller film thicknesses, as well as strain relaxation behavior at larger film thicknesses. The Ge fraction of Si 1−x Ge x thin film is in good agreement with the normalized GeH 4 partial pressure. The Si 1−x Ge x deposition rate increases with an increase of GeH 4 partial pressure. The GeH 4 partial pressure dependence of partial deposition rates [(Si or Ge fraction) × (Si 1−x Ge x thickness) / (deposition time)] shows that the Si partial deposition rate is slightly enhanced by the existence of Ge. From these results, it is proposed that the ECR-plasma CVD process can be utilized for Ge fraction control in highly-strained heterostructure formation of group IV semiconductors. - Highlights: • Si 1−x Ge x alloy and Ge were epitaxially grown on Si(100) without substrate heating. • Large strain and its relaxation behavior can be observed by X-ray diffraction. • Ge fraction of Si 1−x Ge x is equal to normalized GeH 4 partial pressure. • Si partial deposition rate is slightly enhanced by existence of Ge

  9. The electrochemical deposition of tin-nickel alloys and the corrosion properties of the coating

    Jellesen, Morten Stendahl; Møller, Per

    2005-01-01

    The electrodeposition of tin/nickel (65/35 wt%) is a unique coating process because of the deposition of an intermetallic phase of nickel and tin, which cannot be formed by any pyrometallurgical process. From thermodynamic calculations it can be shown that intermetallic phases can be formed throu...

  10. Precipitation of grain boundary α in a laser deposited compositionally graded Ti-8Al-xV alloy - an orientation microscopy study

    Banerjee, R.; Bhattacharyya, D.; Collins, P.C.; Viswanathan, G.B.; Fraser, H.L.

    2004-01-01

    A graded ternary Ti-8Al-xV alloy (all compositions in wt%) has been deposited using the laser engineered net-shaping (LENS TM ) process. A compositional gradient in the alloy, from binary Ti-8Al to Ti-8Al-20V, has been achieved within a length of ∼25 mm. The feedstock used for depositing the graded alloy consisted of elemental Ti, Al, and V powders. Due to the columnar growth morphology of the β grains in these LENS TM deposited Ti alloys, the same prior β grain boundary often extends across lengths ∼10 mm. Using orientation microscopy techniques in a scanning electron microscope, the crystallography of precipitation of grain boundary α across the same boundary with changing composition has been investigated in detail. It was observed that while most grain boundary α precipitates maintain a Burgers or near-Burgers orientation relationship with only one of the β grains, a few of these precipitates develop a Burgers orientation relationship with the other β grain. In some rare instances, the grain boundary α did not develop a Burgers or near-Burgers orientation relationship with either β grains. Interestingly, in many cases while the grain boundary α maintained Burgers relationship with one of the β grains, precipitates of two different variants decorated the boundary, in a near-alternate fashion

  11. Method for producing evaporation inhibiting coating for protection of silicon--germanium and silicon--molybdenum alloys at high temperatures in vacuum

    Chao, P.J.

    1974-01-01

    A method is given for protecting Si--Ge and Si-- Mo alloys for use in thermocouples. The alloys are coated with silicon to inhibit the evaporation of the alloys at high tempenatures in a vacuum. Specific means and methods are provided. (5 fig) (Official Gazette)

  12. Thermomechanical response of 3D laser-deposited Ti–6Al–4V alloy over a wide range of strain rates and temperatures

    Li, Peng-Hui [School of Aeronautics, Northwestern Polytechnical University, Xi’an 710072 (China); Guo, Wei-Guo, E-mail: weiguo@nwpu.edu.cn [School of Aeronautics, Northwestern Polytechnical University, Xi’an 710072 (China); Huang, Wei-Dong [The State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072 (China); Su, Yu [Department of Mechanics, School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081 (China); Lin, Xin [The State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072 (China); Yuan, Kang-Bo [School of Aeronautics, Northwestern Polytechnical University, Xi’an 710072 (China)

    2015-10-28

    To understand and evaluate the thermomechanical property of Ti–6Al–4V alloy prepared by the 3D laser deposition technology, an uniaxial compression test was performed on cylindrical samples using an electronic universal testing machine and enhanced Hopkinson technique, over the range of strain rate from 0.001/s to 5000/s, and at initial temperatures from the room temperature to 1173 K. The microstructure of the undeformed and deformed samples was examined through optical microscopy and the use of scanning electron microscope (SEM). The experimental results show the followings: (1) the anisotropy of the mechanical property of this alloy is not significant despite the visible stratification at the exterior surfaces; (2) initial defects, such as the initial voids and lack of fusion, are found in the microstructure and in the crack surfaces of the deformed samples, and they are considered as a major source of crack initiation and propagation; (3) adiabatic shear bands and shearing can easily develop at all selected temperatures for samples under compression; (4) the yield and ultimate strengths of this laser-deposited Ti–6Al–4V alloy are both lower than those of the Ti–6Al–4V alloy prepared by forging and electron beam melting, whereas both of its strengths are higher than those of a conventional grade Ti–6Al–4V alloy at high strain rate only. In addition to compression tests we also conducted tensile loading tests on the laser-deposited alloy at both low and high strain rates (0.1/s and 1000/s). There is significant tension/compression asymmetry in the mechanical response under high-strain-rate loading. It was found that the quasi-static tensile fracturing exhibits typical composite fracture characteristic with quasi-cleavages and dimples, while the high-strain-rate fracturing is characterized by ductile fracture behavior.

  13. Bi surfactant mediated growth for fabrication of Si/Ge nanostructures and investigation of Si/Ge intermixing by STM

    Paul, N.

    2007-10-26

    In the thesis work presented here, we show that Bi is more promising surfactant material than Sb. We demonstrate that by using Bi as a terminating layer on Ge/Si surface, it is possible to distinguish between Si and Ge in Scanning tunnelling microscope (STM). Any attempt to utilize surfactant mediated growth must be preceded by a thorough study of its effect on the the system being investigated. Thus, the third chapter of this thesis deals with an extensive study of the Bi surfactant mediated growth of Ge on Si(111) surface as a function of Ge coverage. The growth is investigated from the single bilayer Ge coverage till the Ge coverage of about 15 BL when the further Ge deposition leads to two-dimensional growth. In the fourth chapter, the unique property of Bi terminating layer on Ge/Si surface to result in an STM height contrast between Si and Ge is explained with possible explanations given for the reason of this apparent height contrast. The controlled fabrication of Ge/Si nanostructures such as nanowires and nanorings is demonstrated. A study on Ge-Si diffusion in the surface layers by a direct method such as STM was impossible previously because of the similar electronic structure of Ge and Si. Since with the Bi terminating surface layer, one is able to distinguish between Ge and Si, the study of intermixing between them is also possible using STM. This method to distinguish between Si and Ge allows one to study intermixing on the nanoscale and to identify the fundamental diffusion processes giving rise to the intermixing. In Chapter 5 we discuss how this could prove useful especially as one could get a local probe over a very narrow Ge-Si interface. A new model is proposed to estimate change in the Ge concentration in the surface layer with time. The values of the activation energies of Ge/Si exchange and Si/Ge exchange are estimated by fitting the experimental data with the model. The Ge/Si intermixing has been studied on a surface having 1 ML Bi ({radical

  14. Organometallic chemical vapor deposition and characterization of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates

    Xing, G. C.; Bachmann, Klaus J.; Posthill, J. B.; Timmons, M. L.

    1993-01-01

    The epitaxial growth of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates by open tube organometallic chemical vapor deposition (OMCVD) is reported. The chemical composition of the alloys characterized by energy dispersive X-ray spectroscopy shows that alloys with x up to 0.13 can be deposited on (001) GaP. Epitaxial growth with mirror smooth surface morphology was achieved for x less than or equal to 0.05. Transmission electron microscopy (TEM) micrographs of these alloys show specular epitaxy and the absence of microstructural defects indicating a defect density of less than 10(exp 7) cm(sup -2). Selected area electron diffraction pattern of the alloy shows that the epitaxial layer crystallizes in the chalcopyrite structure with relatively weak superlattice reflections indicating certain degree of randomness in the cation sublattice. Hall measurements show that the alloys are p-type, like the unalloyed films; the carrier concentration, however, dropped about 10 times from 2 x 10(exp 18) to 2 x 10(exp 17) cm(sup -3). Absorption measurements indicate that the band tailing in the absorption spectra of the alloy was shifted about 0.04 eV towards shorter wavelength as compared to the unalloyed material. Diodes fabricated from the n(+)-GaP/p-ZnSiP2-ZnGeP2-Ge heterostructure at x = 0.05 have a reverse break-down voltage of -10.8 V and a reverse saturation current density of approximately 6 x 10(exp -8) A/sq cm.

  15. Formation of carbon nanotubes on an amorphous Ni{sub 25}Ta{sub 58}N{sub 17} alloy film by chemical vapor deposition

    Gromov, D. G.; Dubkov, S. V., E-mail: sv.dubkov@gmail.com [National Research University of Electronic Technology MIET (Russian Federation); Pavlov, A. A. [Russian Academy of Sciences, Institute of Nanotechnologies of Microelectronics (Russian Federation); Skorik, S. N. [Technological Center Research and Production Complex (Russian Federation); Trifonov, A. Yu. [Lukin Scientific Research Institute of Physical Problems (Russian Federation); Kirilenko, E. P.; Shulyat’ev, A. S. [National Research University of Electronic Technology MIET (Russian Federation); Shaman, Yu. P. [Technological Center Research and Production Complex (Russian Federation); Rygalin, B. N. [National Research University of Electronic Technology MIET (Russian Federation)

    2016-12-15

    It is shown that it is possible to grow carbon nanotubes on the surface of an amorphous Ni–Ta–N metal alloy film with a low Ni content (~25 at %) by chemical deposition from acetylene at temperature 400–800°C. It is established that the addition of nitrogen into the Ni–Ta alloy composition is favorable for the formation of tantalum nitride and the expulsion of Ni clusters, which act as a catalyst of the growth of carbon nanotubes, onto the surface. From Raman spectroscopy studies, it is found that, as the temperature of synthesis is raised, the quality of nanotubes is improved.

  16. Deposition of Co-Ti alloy on mild steel substrate using laser cladding

    Alemohammad, Hamidreza; Esmaeili, Shahrzad; Toyserkani, Ehsan

    2007-01-01

    Laser cladding of a Co-Ti alloy on a mild steel substrate is studied. Premixed powders with the composition of 85 wt% cobalt and 15 wt% titanium are pre-placed on the substrate and a moving laser beam at different velocities is used to produce clad layers well bounded to the substrate. Characteristics of the clad are investigated using optical microscopy, X-ray diffraction (XRD), energy dispersive spectroscopy (EDS) and microhardness tests. The results reveal that the intermetallic phase TiCo 3 and β (i.e. fcc) cobalt are formed in the clad layer. The clad layer can also have major dilution from the substrate depending on the laser scanning velocity. It is observed that a finer microstructure is achievable with higher laser velocities whereas higher hardness is achieved using lower velocities. The latter is due to the formation of a larger fraction of TiCo 3 phase

  17. Deposition of Co-Ti alloy on mild steel substrate using laser cladding

    Alemohammad, Hamidreza [University of Waterloo, Department of Mechanical and Mechatronics Engineering, 200 University Avenue West, Waterloo, ON N2L 3G1 (Canada)], E-mail: shalemoh@engmail.uwaterloo.ca; Esmaeili, Shahrzad [University of Waterloo, Department of Mechanical and Mechatronics Engineering, 200 University Avenue West, Waterloo, ON N2L 3G1 (Canada); Toyserkani, Ehsan [University of Waterloo, Department of Mechanical and Mechatronics Engineering, 200 University Avenue West, Waterloo, ON N2L 3G1 (Canada)

    2007-05-15

    Laser cladding of a Co-Ti alloy on a mild steel substrate is studied. Premixed powders with the composition of 85 wt% cobalt and 15 wt% titanium are pre-placed on the substrate and a moving laser beam at different velocities is used to produce clad layers well bounded to the substrate. Characteristics of the clad are investigated using optical microscopy, X-ray diffraction (XRD), energy dispersive spectroscopy (EDS) and microhardness tests. The results reveal that the intermetallic phase TiCo{sub 3} and {beta} (i.e. fcc) cobalt are formed in the clad layer. The clad layer can also have major dilution from the substrate depending on the laser scanning velocity. It is observed that a finer microstructure is achievable with higher laser velocities whereas higher hardness is achieved using lower velocities. The latter is due to the formation of a larger fraction of TiCo{sub 3} phase.

  18. Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

    Zhang, Bo; Zheng, Tao; Wang, Qingxiao; Guo, Zaibing; Kim, Moon J.; Alshareef, Husam N.; Gnade, Bruce E.

    2018-01-01

    that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising

  19. Fabrication of Ternary AgPdAu Alloy Nanoparticles on c-Plane Sapphire by the Systematical Control of Film Thickness and Deposition Sequence

    Kunwar, Sundar; Pandey, Puran; Sui, Mao; Bastola, Sushil; Lee, Jihoon

    2018-06-01

    In this work, a systematic study on the fabrication of ternary AgPdAu alloy nanoparticles (NPs) on c-plane sapphire (0001) is presented and the corresponding structural and optical characteristics are demonstrated. The metallic trilayers of various thicknesses and deposition orders are annealed in a controlled manner (400 °C to 900 °C) to induce the solid-state dewetting that yields the various structural configurations of AgPdAu alloy NPs. The dewetting of relatively thicker trilayers (15 nm) is gradually progressed with void nucleation, growth, and coalescence, isolated NP formation, and shape transformation, along with the temperature control. For 6 nm thickness, owing to the sufficient dewetting of trilayers along with enhanced diffusion, dense and small spherical alloy NPs are fabricated. Depending on the specific growth condition, the surface diffusion and interdiffusion of metal atoms, surface and interface energy minimization, Rayleigh instability, and equilibrium configuration are correlated to describe the fabrication of ternary alloy NPs. Ternary alloy NPs exhibit morphology-dependent ultraviolet-visible-near infrared (UV-VIS-NIR) reflectance properties such as the inverse relationship of average reflectance with the surface coverage, absorption enhancement in specific regions, and reflectance maxima in UV and NIR regions. In addition, Raman spectra depict the six active phonon modes of sapphires and their intensity and position modulation by the alloy NPs.

  20. Surface Modification of NiTi Alloy via Cathodic Plasma Electrolytic Deposition and its Effect on Ni Ion Release and Osteoblast Behaviors

    Yan Ying; Cai Kaiyong; Yang Weihu; Liu Peng

    2013-01-01

    To reduce Ni ion release and improve biocompatibility of NiTi alloy, the cathodic plasma electrolytic deposition (CPED) technique was used to fabricate ceramic coating onto a NiTi alloy surface. The formation of a coating with a rough and micro-textured surface was confirmed by X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy, respectively. An inductively coupled plasma mass spectrometry test showed that the formed coating significantly reduced the release of Ni ions from the NiTi alloy in simulated body fluid. The influence of CPED treated NiTi substrates on the biological behaviors of osteoblasts, including cell adhesion, cell viability, and osteogenic differentiation function (alkaline phosphatase), was investigated in vitro. Immunofluorescence staining of nuclei revealed that the CPED treated NiTi alloy was favorable for cell growth. Osteoblasts on CPED modified NiTi alloy showed greater cell viability than those for the native NiTi substrate after 4 and 7 days cultures. More importantly, osteoblasts cultured onto a modified NiTi sample displayed significantly higher differentiation levels of alkaline phosphatase. The results suggested that surface functionalization of NiTi alloy with ceramic coating via the CPED technique was beneficial for cell proliferation and differentiation. The approach presented here is useful for NiTi implants to enhance bone osteointegration and reduce Ni ion release in vitro

  1. Surface Modification of NiTi Alloy via Cathodic Plasma Electrolytic Deposition and its Effect on Ni Ion Release and Osteoblast Behaviors

    Yan, Ying; Cai, Kaiyong; Yang, Weihu; Liu, Peng

    2013-07-01

    To reduce Ni ion release and improve biocompatibility of NiTi alloy, the cathodic plasma electrolytic deposition (CPED) technique was used to fabricate ceramic coating onto a NiTi alloy surface. The formation of a coating with a rough and micro-textured surface was confirmed by X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy, respectively. An inductively coupled plasma mass spectrometry test showed that the formed coating significantly reduced the release of Ni ions from the NiTi alloy in simulated body fluid. The influence of CPED treated NiTi substrates on the biological behaviors of osteoblasts, including cell adhesion, cell viability, and osteogenic differentiation function (alkaline phosphatase), was investigated in vitro. Immunofluorescence staining of nuclei revealed that the CPED treated NiTi alloy was favorable for cell growth. Osteoblasts on CPED modified NiTi alloy showed greater cell viability than those for the native NiTi substrate after 4 and 7 days cultures. More importantly, osteoblasts cultured onto a modified NiTi sample displayed significantly higher differentiation levels of alkaline phosphatase. The results suggested that surface functionalization of NiTi alloy with ceramic coating via the CPED technique was beneficial for cell proliferation and differentiation. The approach presented here is useful for NiTi implants to enhance bone osseointegration and reduce Ni ion release in vitro.

  2. Silver deposition on polypyrrole films electrosynthesised onto Nitinol alloy. Corrosion protection and antibacterial activity.

    Saugo, M; Flamini, D O; Brugnoni, L I; Saidman, S B

    2015-11-01

    The electrosynthesis of polypyrrole films onto Nitinol from sodium salicylate solutions of different concentrations is reported. The morphology and corrosion protection properties of the resulting coatings were examined and they both depend on the sodium salicylate concentration. The immobilisation of silver species in PPy films constituted by hollow rectangular microtubes was studied as a function of the polymer oxidation degree. The highest amount of silver was deposited when the coated electrode was prepolarised at -1.00V (SCE) before silver deposition, suggesting an increase in the amount of non-oxidised segments in the polymer. Finally, the antibacterial activity of the coating against the Gram positive Staphylococcus aureus and Staphylococcus epidermidis bacteria was evaluated. Both strains resulted sensitive to the modified coatings, obtaining a slightly better result against S. aureus. Copyright © 2015 Elsevier B.V. All rights reserved.

  3. Textural Evolution During Micro Direct Metal Deposition of NiTi Alloy

    Khademzadeh, Saeed; Bariani, Paolo F.; Bruschi, Stefania

    2018-03-01

    In this research, a micro direct metal deposition process, newly developed as a potential method for micro additive manufacturing was used to fabricate NiTi builds. The effect of scanning strategy on grain growth and textural evolution was investigated using scanning electron microscope equipped with electron backscattered diffraction detector. Investigations showed that, the angle between the successive single tracks has an important role in grain size distribution and textural evolution of NiTi phase. Unidirectional laser beam scanning pattern developed a fiber texture; conversely, a backward and forward scanning pattern developed a strong ‖‖ RD texture on the surface of NiTi cubic samples produced by micro direct metal deposition.

  4. Substrate temperature dependence of microcrystallinity in plasma-deposited, boron-doped hydrogenated silicon alloys

    Rajeswaran, G.; Kampas, F.J.; Vanier, P.E.; Sabatini, R.L.; Tafto, J.

    1983-01-01

    The glow-discharge decomposition of silane diluted in hydrogen using diborane as a dopant results in the deposition of p-type microcrystalline silicon films at relatively low temperatures. The conductivity of these films is critically dependent on the substrate temperature when the ratio of silane flow rate to total gas flow rate is 1%. Electron micrographs show that highly conducting films contain numerous clusters of 2.5-nm crystallites that are embedded in an amorphous medium

  5. The study of metal-alloy targets and excimer laser deposition technology

    Xu Hua; Wu Weidong; Tang Xiaohong; Zhang Jicheng; Tang Yongjian

    2002-01-01

    Pulsed Laser Deposition (PLD) technology is described. Design and manufacture of the PLD installation is illustrated in detail. The Cu films and Cu/Fe multi-layers are produced by PLD method. The production of the Mg/Si films using magnetron sputtering method is investigated in detail. The percent of Si on Mg/Si film surface is measured by using conductivity method

  6. Processing-Microstructure-Property Relationships for Cold Spray Powder Deposition of Al-Cu Alloys

    2015-06-01

    Champagne [18]. The simulations were completed to compare the simulated particle exit velocities versus the measured particle exit velocities. In...620 m/s to 670 m/s [39]. V. Champagne states that for pure aluminum, an acceptable critical velocity for the deposition of pure aluminum is anything...Materials and Processess, vol. 168, no. 5, pp. 53–55, May 2010. [3] V. K. Champagne and P. F. Leyman, “Cold Spray Process Development for the Reclamation

  7. Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11%

    Hart, John; Hazbun, Ramsey; Gupta, Jay; Kolodzey, James [Department of Electrical Engineering, University of Delaware, 140 Evans Hall, Newark, Delaware 19716 (United States); Adam, Thomas [College of Nanoscale Science and Engineering, SUNY, Albany, New York 12203 (United States); Kim, Yihwan; Huang, Yi-Chiau [Applied Materials, Sunnyvale, California 94085 (United States); Reznicek, Alexander [IBM Research at Albany Nanotech, Albany, New York 12203 (United States)

    2016-03-07

    Pseudomorphic GeSn layers with Sn atomic percentages between 4.5% and 11.3% were grown by chemical vapor deposition using digermane and SnCl{sub 4} precursors on Ge virtual substrates grown on Si. The layers were characterized by x-ray diffraction rocking curves and reciprocal space maps. Photoconductive devices were fabricated, and the dark current was found to increase with Sn concentration. The responsivity of the photoconductors was measured at a wavelength of 1.55 μm using calibrated laser illumination at room temperature and a maximum value of 2.7 mA/W was measured for a 4.5% Sn device. Moreover, the responsivity for higher Sn concentration was found to increase with decreasing temperature. Spectral photoconductivity was measured using Fourier transform infrared spectroscopy. The photoconductive absorption edge continually increased in wavelength with increasing tin percentage, out to approximately 2.4 μm for an 11.3% Sn device. The direct band gap was extracted using Tauc plots and was fit to a bandgap model accounting for layer strain and Sn concentration. This direct bandgap was attributed to absorption from the heavy-hole band to the conduction band. Higher energy absorption was also observed, which was thought to be likely from absorption in the light-hole band. The band gaps for these alloys were plotted as a function of temperature. These experiments show the promise of GeSn alloys for CMOS compatible short wave infrared detectors.

  8. Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11%

    Hart, John; Hazbun, Ramsey; Gupta, Jay; Kolodzey, James; Adam, Thomas; Kim, Yihwan; Huang, Yi-Chiau; Reznicek, Alexander

    2016-01-01

    Pseudomorphic GeSn layers with Sn atomic percentages between 4.5% and 11.3% were grown by chemical vapor deposition using digermane and SnCl 4 precursors on Ge virtual substrates grown on Si. The layers were characterized by x-ray diffraction rocking curves and reciprocal space maps. Photoconductive devices were fabricated, and the dark current was found to increase with Sn concentration. The responsivity of the photoconductors was measured at a wavelength of 1.55 μm using calibrated laser illumination at room temperature and a maximum value of 2.7 mA/W was measured for a 4.5% Sn device. Moreover, the responsivity for higher Sn concentration was found to increase with decreasing temperature. Spectral photoconductivity was measured using Fourier transform infrared spectroscopy. The photoconductive absorption edge continually increased in wavelength with increasing tin percentage, out to approximately 2.4 μm for an 11.3% Sn device. The direct band gap was extracted using Tauc plots and was fit to a bandgap model accounting for layer strain and Sn concentration. This direct bandgap was attributed to absorption from the heavy-hole band to the conduction band. Higher energy absorption was also observed, which was thought to be likely from absorption in the light-hole band. The band gaps for these alloys were plotted as a function of temperature. These experiments show the promise of GeSn alloys for CMOS compatible short wave infrared detectors.

  9. Process optimization of atomized melt deposition for the production of dispersion strengthened Al-8.5%Fe-1.2%V-1.7%Si alloys

    Hariprasad, S.; Sastry, S.M.L.; Jerina, K.L.

    1995-01-01

    Atomized melt deposition is a low cost manufacturing process with the microstructural control achieved through rapid solidification. In this process the liquid metal is disintegrated into fine droplets by gas atomization and the droplets are deposited on a substrate producing near net shape products. In the present investigation Al-8.5%Fe-1.2%V-1.7%Si alloy was produced using atomized melt deposition process to study the evolution of microstructure and assess the cooling rates and the undercooling achieved during the process. The size, morphology and the composition of second phase particles in the alloy are strong functions of the cooling rate and the undercooling and hence microstructural changes with the variation in process parameters were quantified. To define optimum conditions for the atomized melt deposition process, a mathematical model was developed. The model determines the temperature distribution of the liquid droplets during gas atomization and during the deposition stages. The model predicts the velocity distribution, cooling rates and the fraction solid, during the flight for different droplet sizes. The solidification heat transfer phenomena taking place during the atomized melt deposition process was analyzed using a finite difference method based on the enthalpy formulation

  10. The role of SiGe buffer in growth and relaxation of Ge on free-standing Si(001) nano-pillars.

    Zaumseil, P; Kozlowski, G; Schubert, M A; Yamamoto, Y; Bauer, J; Schülli, T U; Tillack, B; Schroeder, T

    2012-09-07

    We study the growth and relaxation processes of Ge nano-clusters selectively grown by chemical vapor deposition on free-standing 90 nm wide Si(001) nano-pillars with a thin Si(0.23)Ge(0.77) buffer layer. We found that the dome-shaped SiGe layer with a height of about 28 nm as well as the Ge dot deposited on top of it partially relaxes, mainly by elastic lattice bending. The Si nano-pillar shows a clear compliance behavior-an elastic response of the substrate on the growing film-with the tensile strained top part of the pillar. Additional annealing at 800 °C leads to the generation of misfit dislocation and reduces the compliance effect significantly. This example demonstrates that despite the compressive strain generated due to the surrounding SiO(2) growth mask it is possible to realize an overall tensile strain in the Si nano-pillar and following a compliant substrate effect by using a SiGe buffer layer. We further show that the SiGe buffer is able to improve the structural quality of the Ge nano-dot.

  11. Erosive Wear of Inconel 625 Alloy Coatings Deposited by CMT Method

    Solecka M.

    2016-06-01

    Full Text Available The article presents the investigation results concerning the determination of the characteristics of erosive wear caused by the impact of Al2O3 solid particles on the surface of Inconel 625 alloy after plastic working and the same material after weld cladding process using the CMT method. Erosion wear tests were performed at two temperatures: 20°C and 650°C. The erosion tests were conducted using the standard ASTM G76. A jet with a specified abrasive waight was directed to the surface of the tested material at an α impingement angle varied in the range of 30-90° at a velocity imparted to the abrasive by the medium, which was compressed air. The eroded surface was examined using a scanning electron microscope (SEM, while the depths of craters caused by the erosion tests were measured with an optical profilometer. The predominant mechanisms of the formation of mass losses during solid particle erosion were microcutting and microfissuring.

  12. Issues associated with the metalorganic chemical vapor deposition of ScGaN and YGaN alloys.

    Koleske, Daniel David; Knapp, James Arthur; Lee, Stephen Roger; Crawford, Mary Hagerott; Creighton, James Randall; Cross, Karen Charlene; Thaler, Gerald

    2009-07-01

    The most energy efficient solid state white light source will likely be a combination of individually efficient red, green, and blue LED. For any multi-color approach to be successful the efficiency of deep green LEDs must be significantly improved. While traditional approaches to improve InGaN materials have yielded incremental success, we proposed a novel approach using group IIIA and IIIB nitride semiconductors to produce efficient green and high wavelength LEDs. To obtain longer wavelength LEDs in the nitrides, we attempted to combine scandium (Sc) and yttrium (Y) with gallium (Ga) to produce ScGaN and YGaN for the quantum well (QW) active regions. Based on linear extrapolation of the proposed bandgaps of ScN (2.15 eV), YN (0.8 eV) and GaN (3.4 eV), we expected that LEDs could be fabricated from the UV (410 nm) to the IR (1600 nm), and therefore cover all visible wavelengths. The growth of these novel alloys potentially provided several advantages over the more traditional InGaN QW regions including: higher growth temperatures more compatible with GaN growth, closer lattice matching to GaN, and reduced phase separation than is commonly observed in InGaN growth. One drawback to using ScGaN and YGaN films as the active regions in LEDs is that little research has been conducted on their growth, specifically, are there metalorganic precursors that are suitable for growth, are the bandgaps direct or indirect, can the materials be grown directly on GaN with a minimal defect formation, as well as other issues related to growth. The major impediment to the growth of ScGaN and YGaN alloys was the low volatility of metalorganic precursors. Despite this impediment some progress was made in incorporation of Sc and Y into GaN which is detailed in this report. Primarily, we were able to incorporate up to 5 x 10{sup 18} cm{sup -3} Y atoms into a GaN film, which are far below the alloy concentrations needed to evaluate the YGaN optical properties. After a no-cost extension was

  13. Tungsten silicide contacts to polycrystalline silicon and silicon-germanium alloys

    Srinivasan, G.; Bain, M.F.; Bhattacharyya, S.; Baine, P.; Armstrong, B.M.; Gamble, H.S.; McNeill, D.W.

    2004-01-01

    Silicon-germanium alloy layers will be employed in the source-drain engineering of future MOS transistors. The use of this technology offers advantages in reducing series resistance and decreasing junction depth resulting in reduction in punch-through and SCE problems. The contact resistance of metal or metal silicides to the raised source-drain material is a serious issue at sub-micron dimensions and must be minimised. In this work, tungsten silicide produced by chemical vapour deposition has been investigated as a contact metallization scheme to both boron and phosphorus doped polycrystalline Si 1- x Ge x , with 0 ≤x ≤ 0.3. Cross bridge Kelvin resistor (CKBR) structures were fabricated incorporating CVD WSi 2 and polycrystalline SiGe. Tungsten silicide contacts to control polysilicon CKBR structures have been shown to be of high quality with specific contact resistance ρ c values 3 x 10 -7 ohm cm 2 and 6 x 10 -7 ohm cm 2 obtained to boron and phosphorus implanted samples respectively. The SiGe CKBR structures show that the inclusion of Ge yields a reduction in ρ c for both dopant types. The boron doped SiGe exhibits a reduction in ρ c from 3 x 10 -7 to 5 x 10 -8 ohm cm 2 as Ge fraction is increased from 0 to 0.3. The reduction in ρ c has been shown to be due to (i) the lowering of the tungsten silicide Schottky barrier height to p-type SiGe resulting from the energy band gap reduction, and (ii) increased activation of the implanted boron with increased Ge fraction. The phosphorus implanted samples show less sensitivity of ρ c to Ge fraction with a lowest value in this work of 3 x 10 -7 ohm cm 2 for a Ge fraction of 0.3. The reduction in specific contact resistance to the phosphorus implanted samples has been shown to be due to increased dopant activation alone

  14. Silicon-substituted hydroxyapatite coating with Si content on the nanotube-formed Ti–Nb–Zr alloy using electron beam-physical vapor deposition

    Jeong, Yong-Hoon; Choe, Han-Cheol; Brantley, William A.

    2013-01-01

    The purpose of this study was to investigate the electrochemical characteristics of silicon-substituted hydroxyapatite coatings on the nanotube-formed Ti–35Nb–10Zr alloy. The silicon-substituted hydroxyapatite (Si–HA) coatings on the nanotube structure were deposited by electron beam-physical vapor deposition and anodization methods, and biodegradation properties were analyzed by potentiodynamic polarization and electrochemical impedance spectroscopy measurement. The surface characteristics were analyzed by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction (XRD). The Si–HA layers were deposited with rough features having highly ordered nanotube structures on the titanium alloy substrate. The thickness of the Si–HA coating was less than that of the HA coating. The XRD results confirmed that the Si–HA coating on the nanotube structure consisted of TiO 2 anatase, TiO 2 rutile, hydroxyapatite, and calcium phosphate silicate. The Si–HA coating surface exhibited lower I corr than the HA coating, and the polarization resistance was increased by substitution of silicon in hydroxyapatite. - Highlights: • Silicon substituted hydroxyapatite (Si–HA) was coated on nanotubular titanium alloy. • The Si–HA coating thickness was less than single hydroxyapatite (HA) coating. • Si–HA coatings consisted of TiO 2 , HA, and Ca 5 (PO 4 ) 2 SiO 4 . • Polarization resistance of the coating was increased by Si substitution in HA

  15. Characterization on the coatings of Ni-base alloy with nano- and micron-size Sm{sub 2}O{sub 3} addition prepared by laser deposition

    Zhang Shihong [School of Materials Science and Engineering, Anhui University of Technology, Maanshan City, Anhui Province 243002 (China); School of Nano and Advanced Materials Engineering, Changwon National University, 9, Sarim-Dong, Changwon, Gyeongnam 641-773 (Korea, Republic of)], E-mail: zsh10110903@hotmail.com; Li Mingxi [School of Materials Science and Engineering, Anhui University of Technology, Maanshan City, Anhui Province 243002 (China); Yoon, Jae Hong; Cho, Tong Yul [School of Nano and Advanced Materials Engineering, Changwon National University, 9, Sarim-Dong, Changwon, Gyeongnam 641-773 (Korea, Republic of)

    2008-12-01

    The coating materials are the powder mixture of micron-size Ni-base alloy powders with both 1.5 wt.% micron-size and nano-size Sm{sub 2}O{sub 3} powders, which are prepared on Q235 steel plate by 2.0 kW CO{sub 2} laser deposition. The results indicate that with rare earth oxide Sm{sub 2}O{sub 3} addition, the width of planar crystallization is smaller than that of the Ni-base alloy coatings. Micron- and nano-Sm{sub 2}O{sub 3}/Ni-base alloy coatings have similar microstructure showing the primary phase of {gamma}-Ni dendrite and eutectic containing {gamma}-Ni and Cr{sub 23}C{sub 6} phases. However, compared to micron-Sm{sub 2}O{sub 3}/Ni-base alloy, preferred orientation of {gamma}-Ni dendrite of nano-Sm{sub 2}O{sub 3}/Ni-base alloy is weakened. Planar crystal of several-{mu}m thickness is first grown and then dendrite growth is observed at 1.5% micron-Sm{sub 2}O{sub 3}/Ni-base alloy coating whereas equiaxed dendrite is grown at 1.5% nano-Sm{sub 2}O{sub 3}/Ni-base alloy coating. Hardness and wear resistance of the coating improves with decreasing Sm{sub 2}O{sub 3} size from micron to nano. The improvement on tribological property of nano-Sm{sub 2}O{sub 3}/Ni-base alloy over micron-Sm{sub 2}O{sub 3}/Ni-base alloy coatings can be attributed to the better resistance of equiaxed dendrite to adhesion interactions during the wear process. In 6 M HNO{sub 3} solution, the corrosion resistance is greatly improved with nano-Sm{sub 2}O{sub 3} addition since the decrease of corrosion ratio along grain-boundary in nano-Sm{sub 2}O{sub 3}/Ni-base alloy coating contributes to harmonization of corrosion potential.

  16. Conversion Matrix Analysis of SiGe HBT Gilbert Cell Mixers

    Johansen, Tom Keinicke; Vidkjær, Jens; Krozer, Viktor

    2004-01-01

    The frequency response of SiGe HBT active mixers based on the Gilbert cell topology is analyzed theoretically. The time-varying operation of the Gilbert cell mixer is taken into account by applying conversion matrix analysis. The main bandwidth limiting mechanisms experienced in SiGe HBT Gilbert ...

  17. Influence of processing parameters on lattice parameters in laser deposited tool alloy steel

    Sun, G.F., E-mail: gfsun82@gmail.com [Center for Laser-Aided Intelligent Manufacturing, University of Michigan, Ann Arbor, MI, 48109 (United States); School of Mechanical Engineering, Jiangsu University, Zhenjiang, Jiangsu, 212013 (China); Bhattacharya, S. [Center for Laser-Aided Intelligent Manufacturing, University of Michigan, Ann Arbor, MI, 48109 (United States); Dinda, G.P.; Dasgupta, A. [Center for Advanced Technologies, Focus: Hope, Detroit, MI, 48238 (United States); Mazumder, J. [Center for Laser-Aided Intelligent Manufacturing, University of Michigan, Ann Arbor, MI, 48109 (United States)

    2011-06-15

    Highlights: {yields} Orientation relationships among phases in the DMD are given. {yields} Martensite lattice parameters increased with laser specific energy. {yields} Austenite lattice parameters decreased with laser specific energy. - Abstract: Laser aided direct metal deposition (DMD) has been used to form AISI 4340 steel coating on the AISI 4140 steel substrate. The microstructural property of the DMD coating was analyzed by means of scanning electron microscopy, transmission electron microscopy and X-ray diffractometry. Microhardness of the DMD was measured with a Vickers microhardness tester. Results indicate that DMD can be used to form dense AISI 4340 steel coatings on AISI 4140 steel substrate. The DMD coating is mainly composed of martensite and retained austenite. Consecutive thermal cycles have a remarkable effect on the microstructure of the plan view of the DMD coating and on the corresponding microhardness distribution. Orientation relationships among austenite, martensite and cementite in the DMD coating followed the ones in conventional heat treated steels. As the laser specific energy decreased, cooling rate increased, and martensite peaks broadened and shifted to a lower Bragg's angle. Also martensite lattice parameters increased and austenite lattice parameters decreased due to the above parameter change.

  18. Influence of processing parameters on lattice parameters in laser deposited tool alloy steel

    Sun, G.F.; Bhattacharya, S.; Dinda, G.P.; Dasgupta, A.; Mazumder, J.

    2011-01-01

    Highlights: → Orientation relationships among phases in the DMD are given. → Martensite lattice parameters increased with laser specific energy. → Austenite lattice parameters decreased with laser specific energy. - Abstract: Laser aided direct metal deposition (DMD) has been used to form AISI 4340 steel coating on the AISI 4140 steel substrate. The microstructural property of the DMD coating was analyzed by means of scanning electron microscopy, transmission electron microscopy and X-ray diffractometry. Microhardness of the DMD was measured with a Vickers microhardness tester. Results indicate that DMD can be used to form dense AISI 4340 steel coatings on AISI 4140 steel substrate. The DMD coating is mainly composed of martensite and retained austenite. Consecutive thermal cycles have a remarkable effect on the microstructure of the plan view of the DMD coating and on the corresponding microhardness distribution. Orientation relationships among austenite, martensite and cementite in the DMD coating followed the ones in conventional heat treated steels. As the laser specific energy decreased, cooling rate increased, and martensite peaks broadened and shifted to a lower Bragg's angle. Also martensite lattice parameters increased and austenite lattice parameters decreased due to the above parameter change.

  19. Hydroxyapatite coating on cobalt alloys using electrophoretic deposition method for bone implant application

    Aminatun; M, Shovita; I, Chintya K.; H, Dyah; W, Dwi

    2017-05-01

    Damage on bone due to osteoporosis and cancer triggered high demand for bone implant prosthesis which is a permanent implant. Thus, a prosthesis coated with hydroxyapatite (HA) is required because it is osteoconductive that can trigger the growth of osteoblast cells. The purpose of this study is to determine the optimum concentration of HA suspension in terms of the surface morphology, coating thickness, adhesion strength and corrosion rate resulting in the HA coating with the best characteristics for bone implant. Coating using electrophoretic deposition (EPD) method with concentrations of 0.02M, 0.04M, 0.06M, 0.08M, and 0.1M was performed on the voltage and time of 120V and 30 minutes respectively. The process was followed by sintering at the temperature of 900 °C for 10 minutes. The results showed that the concentration of HA suspension influences the thickness and the adhesion of layer of HA. The higher the concentration of HA-ethanol suspension the thicker the layer of HA, but its coating adhesion strength values became lower. The concentration of HA suspension of 0.04 M is the best concentration, with characteristics that meet the standards of the bone implant prosthesis. The characteristics are HA coating thickness of 199.93 ± 4.85 μm, the corrosion rate of 0.0018 mmpy and adhesion strength of 4.175 ± 0.716 MPa.

  20. Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

    Zhang, Bo

    2018-04-14

    The thermal stability and contact resistance of TaAlN thin films as electrical contacts to SiGe thermoelectric elements are reported. We demonstrate that a sharp interface is maintained after the device annealed at 800°C for over 100h, indicating that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising contact material for high temperature thermoelectrics such as SiGe.

  1. The reliability studies of nano-engineered SiGe HBTs using Pelletron accelerator

    Prakash, A. P. Gnana; Praveen, K. C.; Pushpa, N.; Cressler, John D.

    2015-05-01

    The effects of high energy ions on the electrical characteristics of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were studied in the total dose of ranging from 600 krad to 100 Mrad (Si). The two generations (50 GHz and 200 GHz) of SiGe HBTs were exposed to 50 MeV lithium, 75 MeV boron and 100 MeV oxygen ions. The electrical characteristics of SiGe HBTs were studied before and after irradiation. The SiGe HBTs were exposed to 60Co gamma radiation in the same total dose. The results are systematically compared in order to understand the interaction of ions and ionizing radiation with SiGe HBTs.

  2. Cryogenic operation of a 24 GHz MMIC SiGe HBT medium power amplifier

    Qin, Guoxuan; Jiang, Ningyue; Seo, Jung-Hun; Cho, Namki; Van der Weide, Daniel; Ma, Zhenqiang; Ponchak, George E; Ma, Pingxi; Stetson, Scott; Racanelli, Marco

    2010-01-01

    The performance of a SiGe heterojunction bipolar transistor (HBT) millimetre-wave power amplifier (PA) operating at cryogenic temperature was reported and analysed for the first time. A 24 GHz two-stage medium PA employing common-emitter and common-base SiGe power HBTs in the first and the second stage, respectively, showed a significant power gain increase at 77 K in comparison with that measured at room temperature. Detailed analyses indicate that cryogenic operation of SiGe HBT-based PAs mainly affects (improves) the performance of the SiGe HBTs in the circuits due to transconductance enhancement through magnified, favourable changes of SiGe bandgap due to cooling (ΔE g /kT) and minimized thermal effects, with little influence on the passive components of the circuits

  3. Noise Parameter Analysis of SiGe HBTs for Different Sizes in the Breakdown Region

    Chie-In Lee

    2016-01-01

    Full Text Available Noise parameters of silicon germanium (SiGe heterojunction bipolar transistors (HBTs for different sizes are investigated in the breakdown region for the first time. When the emitter length of SiGe HBTs shortens, minimum noise figure at breakdown decreases. In addition, narrower emitter width also decreases noise figure of SiGe HBTs in the avalanche region. Reduction of noise performance for smaller emitter length and width of SiGe HBTs at breakdown resulted from the lower noise spectral density resulting from the breakdown mechanism. Good agreement between experimental and simulated noise performance at breakdown is achieved for different sized SiGe HBTs. The presented analysis can benefit the RF circuits operating in the breakdown region.

  4. The reliability studies of nano-engineered SiGe HBTs using Pelletron accelerator

    Prakash, A. P. Gnana, E-mail: gnanaprakash@physics.uni-mysore.ac.in; Praveen, K. C. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore, Karnataka-570006 (India); Pushpa, N. [Department of PG Studies in Physics, JSS College, Ooty Road, Mysore-570025 (India); Cressler, John D. [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332 (United States)

    2015-05-15

    The effects of high energy ions on the electrical characteristics of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were studied in the total dose of ranging from 600 krad to 100 Mrad (Si). The two generations (50 GHz and 200 GHz) of SiGe HBTs were exposed to 50 MeV lithium, 75 MeV boron and 100 MeV oxygen ions. The electrical characteristics of SiGe HBTs were studied before and after irradiation. The SiGe HBTs were exposed to {sup 60}Co gamma radiation in the same total dose. The results are systematically compared in order to understand the interaction of ions and ionizing radiation with SiGe HBTs.

  5. Electrochemical characterization of pulsed layer deposited hydroxyapatite-zirconia layers on Ti-21Nb-15Ta-6Zr alloy for biomedical application

    Izquierdo, Javier [Department of Chemistry, Universidad de La Laguna, P.O. Box 456, E-38200 La Laguna, Tenerife (Spain); Bolat, Georgiana [“Gheorghe Asachi” Technical University of Iasi, Faculty of Chemical Engineering and Environmental Protection, 73 Prof. Dr. Doc. D. Mangeron Street, 700050 Iasi (Romania); Cimpoesu, Nicanor [“Gheorghe Asachi” Technical University of Iasi, Faculty of Materials Science, 61-63 Prof. Dr. Doc. D. Mangeron Street, 700050 Iasi (Romania); Trinca, Lucia Carmen [Science Department, University of Agricultural Sciences and Veterinary Medicine, M. Sadoveanu Alley 3, 700490 Iasi (Romania); Mareci, Daniel, E-mail: danmareci@yahoo.com [“Gheorghe Asachi” Technical University of Iasi, Faculty of Chemical Engineering and Environmental Protection, 73 Prof. Dr. Doc. D. Mangeron Street, 700050 Iasi (Romania); Souto, Ricardo Manuel, E-mail: rsouto@ull.es [Department of Chemistry, Universidad de La Laguna, P.O. Box 456, E-38200 La Laguna, Tenerife (Spain); Institute of Material Science and Nanotechnology, Universidad de La Laguna, E-38200 La Laguna, Tenerife (Spain)

    2016-11-01

    Highlights: • New quarternary Ti-based alloy for biomaterial application. • Combined hydroxyapatite-zirconia coating produced by pulsed laser deposition. • Porous layer formed on the coated alloy blocks electron transfer reactions. • Electrochemical behaviour consistent with passive film with duplex structure. • HA–ZrO{sub 2} coated Ti-21Nb-15Ta-6Zr exhibits high potential for osseointegration. - Abstract: A new titanium base Ti-21Nb-15Ta-6Zr alloy covered with hydroxyapatite-zirconia (HA–ZrO{sub 2}) by pulsed laser deposition (PLD) technique was characterized regarding its corrosion resistance in simulated physiological Ringer’s solution at 37 °C. For the sake of comparison, Ti-6Al-4V standard implant alloy, with and without hydroxyapatite-zirconia coating, was also characterized. Multiscale electrochemical analysis using both conventional averaging electrochemical techniques, namely electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization, and spatially-resolved microelectrochemical techniques (scanning electrochemical microscopy, SECM) were used to investigate the electrochemical behaviour of the materials. In addition, scanning electron microscopy evidenced that no relevant surface morphology changes occurred on the materials upon immersion in the simulated physiological solution, despite variations in their electrochemical behaviour. Although uncoated metals appear to show better performances during conventional corrosion tests, the response is still quite similar for the HA–ZrO{sub 2} coated materials while providing superior resistance towards electron transfer due to the formation of a more dense film on the surface, thus effectively behaving as a passive material. It is believed corrosion of the HA–ZrO{sub 2} coated Ti-21Nb-15Ta-6Zr alloy will have negligible effect upon biochemical and cellular events at the bone-implant interface and could facilitate osseointegration.

  6. Investigation of high mobility pseudomorphic SiGe p-channels in Si MOSFETS at low and high electric fields

    Palmer, Martin John

    2001-01-01

    Silicon Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) for high speed, high current applications are rapidly approaching the physical and financial limits of the technology. This opens opportunities for the incorporation of materials with intrinsically better transport characteristics. An alloy of silicon and germanium is one such material that is gaining much recognition as the active component of MOSFETs and as the secondary structures (such as the gate electrode). This work examines a batch of buried channel Si 0.64 Ge 0.36 p-MOSFETs, with a minimum effective length of 0.35 μm, under different bias conditions and at different temperatures. High current and transconductance enhancements are apparent at long gate lengths. The carrier mobility is up to a factor of 2.5 times that of silicon at room temperature and 7.5 times at 4 K. A clear trend of decreasing peak mobility with decreasing silicon cap thickness is evident. Simulations show that scattering caused by the roughness of the SiO 2 /Si interface dominates, rather than alloy scattering or Si/SiGe roughness, even for a buried channel. This scattering increases with the proximity of the carriers to the interface. An increase of interface trap density with decreasing cap thickness, demonstrates that segregated germanium exists some distance into the cap and interferes with the oxidation process. This will increase scattering through increased SiO 2 /Si roughness and increased trapped charge. The short channel, high field results are comparable or slightly worse than those of silicon due to lower saturation drift velocity. However, fitting to a drift-diffusion model shows an apparent increase in saturation velocity for short channels, especially at low temperatures. This effect correlates with the low field mobility and is greater for devices containing SiGe. This is an indication of velocity overshoot, which may enhance the performance of SiGe MOSFETs at deep submicron gate lengths. (author)

  7. Effect Of Low-Temperature Annealing On The Properties Of Ni-P Amorphous Alloys Deposited Via Electroless Plating

    Zhao Guanlin

    2015-06-01

    Full Text Available Amorphous Ni-P alloys were prepared via electroless plating and annealing at 200°C at different times to obtain different microstructures. The effects of low-temperature annealing on the properties of amorphous Ni-P alloys were studied. The local atomic structure of the annealed amorphous Ni-P alloys was analyzed by calculating the atomic pair distribution function from their X-ray diffraction patterns. The results indicate that the properties of the annealed amorphous Ni-P alloys are closely related to the order atomic cluster size. However, these annealed Ni-P alloys maintained their amorphous structure at different annealing times. The variation in microhardness is in agreement with the change in cluster size. By contrast, the corrosion resistance of the annealed alloys in 3.5 wt% NaCl solution increases with the decrease in order cluster size.

  8. Microstructure and properties of composite polyetheretherketone/Bioglass® coatings deposited on Ti–6Al–7Nb alloy for medical applications

    Moskalewicz, Tomasz; Seuss, Sigrid; Boccaccini, Aldo R.

    2013-01-01

    Composite polyetheretherketone (PEEK)/Bioglass ® coatings were electrophoretically deposited on two phase α + β Ti–6Al–7Nb titanium alloy substrates. A heat treatment was performed to improve the adhesion of the coatings to the substrate. The microstructure of the coatings and substrate was examined by light microscopy, scanning- and transmission electron microscopy methods as well as by X-ray diffractometry. Coatings deposited from suspensions with PEEK/Bioglass ® weight ratio of 0.3 showed the best quality. Coatings of 40 μm thickness, exhibiting uniform porosity, without any cracks or presence of large voids were produced. The microstructure of the coatings was observed to be composed of Bioglass ® particles fairly homogeneously embedded in a PEEK matrix. STEM-EDX line analysis revealed diffusion of Na from the glass to the PEEK matrix after heat-treatment. The results demonstrate that electrophoretic deposition (EPD) is a very useful method to deposit uniform and reproducible microporous composite PEEK/Bioglass ® coatings on titanium alloy substrate for biomedical applications.

  9. The Tribological Behaviors of Three Films Coated on Biomedical Titanium Alloy by Chemical Vapor Deposition

    Wang, Song; Liao, Zhenhua; Liu, Yuhong; Liu, Weiqiang

    2015-11-01

    Three thin films (DLC, a-C, and TiN) were performed on Ti6Al4V by chemical vapor deposition. Carbon ion implantation was pretreated for DLC and a-C films while Ti transition layer was pretreated for TiN film to strengthen the bonding strength. X-ray diffraction, Raman measurement, nano-hardness and nano-scratch tester, and cross-section etching by FIB method were used to analyze film characteristics. Tribological behaviors of these coatings were studied by articulation with both ZrO2 and UHMWPE balls using ball-on-disk sliding. The thickness values reached ~0.46, ~0.33, and ~1.67 μm for DLC, a-C, and TiN film, respectively. Nano-hardness of the coatings compared with that of untreated and bonding strength (critical load in nano-scratch test) values of composite coatings compared with that of monolayer film all increased significantly, respectively. Under destructive test (ZrO2 ball conterface) in bovine serum lubrication, TiN coating revealed the best wear resistance while DLC showed the worst. Film failure was mainly attributed to the plowing by hard ZrO2 ball characterized by abrasive and adhesive wear. Under normal test (UHMWPE ball conterface), all coatings showed significant improvement in wear resistance both in dry sliding and bovine serum lubrication. Both DLC and a-C films showed less surface damage than TiN film due to the self-lubricating phenomenon in dry sliding. TiN film showed the largest friction coefficient both in destructive and normal tests, devoting to the big TiN grains thus leading to much rougher surface and then a higher value. The self-lubricating film formed on DLC and a-C coating could also decrease their friction coefficients. The results indicated that three coatings revealed different wear mechanisms, and thick DLC or a-C film was more promising in application in lower stress conditions such as artificial cervical disk.

  10. Thermal transport in nanocrystalline Si and SiGe by ab initio based Monte Carlo simulation.

    Yang, Lina; Minnich, Austin J

    2017-03-14

    Nanocrystalline thermoelectric materials based on Si have long been of interest because Si is earth-abundant, inexpensive, and non-toxic. However, a poor understanding of phonon grain boundary scattering and its effect on thermal conductivity has impeded efforts to improve the thermoelectric figure of merit. Here, we report an ab-initio based computational study of thermal transport in nanocrystalline Si-based materials using a variance-reduced Monte Carlo method with the full phonon dispersion and intrinsic lifetimes from first-principles as input. By fitting the transmission profile of grain boundaries, we obtain excellent agreement with experimental thermal conductivity of nanocrystalline Si [Wang et al. Nano Letters 11, 2206 (2011)]. Based on these calculations, we examine phonon transport in nanocrystalline SiGe alloys with ab-initio electron-phonon scattering rates. Our calculations show that low energy phonons still transport substantial amounts of heat in these materials, despite scattering by electron-phonon interactions, due to the high transmission of phonons at grain boundaries, and thus improvements in ZT are still possible by disrupting these modes. This work demonstrates the important insights into phonon transport that can be obtained using ab-initio based Monte Carlo simulations in complex nanostructured materials.

  11. Influence of the crystallization process on the luminescence of multilayers of SiGe nanocrystals embedded in SiO2

    Avella, M.; Prieto, A.C.; Jimenez, J.; Rodriguez, A.; Sangrador, J.; Rodriguez, T.; Ortiz, M.I.; Ballesteros, C.

    2008-01-01

    Multilayers of SiGe nanocrystals embedded in an oxide matrix have been fabricated by low-pressure chemical vapor deposition of SiGe and SiO 2 onto Si wafers (in a single run at 390 deg. C and 50 mTorr, using GeH 4 , Si 2 H 6 and O 2 ) followed by a rapid thermal annealing treatment to crystallize the SiGe nanoparticles. The main emission band is located at 400 nm in both cathodoluminescence and photoluminescence experiments at 80 K and also at room temperature. The annealing conditions (temperatures ranging from 700 to 1000 deg. C and for times of 30 and 60 s) have been investigated in samples with different diameter of the nanoparticles (from ∼3 to ≥5 nm) and oxide interlayer thickness (15 and 35 nm) in order to establish a correlation between the crystallization of the nanoparticles, the degradation of their composition by Ge diffusion and the intensity of the luminescence emission band. Structures with small nanoparticles (3-4.5 nm) separated by thick oxide barriers (∼35 nm) annealed at 900 deg. C for 60 s yield the maximum intensity of the luminescence. An additional treatment at 450 deg. C in forming gas for dangling-bond passivation increases the intensity of the luminescence band by 25-30%

  12. Investigating ESD sensitivity in electrostatic SiGe MEMS

    Sangameswaran, Sandeep; De Coster, Jeroen; Linten, Dimitri; Scholz, Mirko; Thijs, Steven; Groeseneken, Guido; De Wolf, Ingrid

    2010-01-01

    The sensitivity of electrostatically actuated SiGe microelectromechanical systems to electrostatic discharge events has been investigated in this paper. Torsional micromirrors and RF microelectromechanical systems (MEMS) actuators have been used as two case studies to perform this study. On-wafer electrostatic discharge (ESD) measurement methods, such as the human body model (HBM) and machine model (MM), are discussed. The impact of HBM ESD zap tests on the functionality and behavior of MEMS is explained and the ESD failure levels of MEMS have been verified by failure analysis. It is demonstrated that electrostatic MEMS devices have a high sensitivity to ESD and that it is essential to protect them.

  13. Si, Ge and SiGe wires for sensor application

    Druzhinin, A.A.; Khoverko, Yu.M.; Ostrovskii, I.P.; Nichkalo, S.I.; Nikolaeva, A.A.; Konopko, L.A.; Stich, I.

    2011-01-01

    Resistance and magnetoresistance of Si, Ge and Si-Ge micro- and nanowires were studied in temperature range 4,2-300 K at magnetic fields up to 14 T. The wires diameters range from 200 nm to 20 μm. Ga-In gates were created to wires and ohmic I-U characteristics were observed in all temperature range. It was found high elastic strain for Ge nanowires (of about 0,7%) as well as high magnitude of magnetoresistance (of about 250% at 14 T), which was used to design multifunctional sensor of simultaneous measurements of strain and magnetic field intensity. (authors)

  14. Effect of Si/Ge ratio on resistivity and thermopower in Gd{sub 5}Si{sub x}Ge{sub 4-x} magnetocaloric compounds

    Raj Kumar, D.M. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad 500058 (India); Manivel Raja, M., E-mail: mraja@dmrl.drdo.i [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad 500058 (India); Prabahar, K.; Chandrasekaran, V. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad 500058 (India); Poddar, Asok; Ranganathan, R. [Saha Institute of Nuclear Physics, Kolkata 700064 (India); Suresh, K.G. [Indian Institute of Technology Bombay, Mumbai 400076 (India)

    2011-07-15

    The effect of Si/Ge ratio on resistivity and thermopower behavior has been investigated in the magnetocaloric ferromagnetic Gd{sub 5}Si{sub x}Ge{sub 4-x} compounds with x=1.7-2.3. Microstructural studies reveal the presence of Gd{sub 5}(Si,Ge){sub 4}-matrix phase (5:4-type) along with traces of secondary phases (5:5 or 5:3-type). The x=1.7 and 2.0 samples display the presence of a first order structural transition from orthorhombic to monoclinic phase followed by a magnetic transition of the monoclinic phase. The alloys with x=2.2 and 2.3 display only magnetic transitions of the orthorhombic phase. A low temperature feature apparent in the AC susceptibility and resistivity data below 100 K reflects an antiferromagnetic transition of secondary phase(s) present in these compounds. The resistivity behavior study correlates with microstructural studies. A large change in thermopower of -8 {mu}V/K was obtained at the magneto-structural transition for the x=2 compound. - Research highlights: Effect of Si/Ge ratio on microstructure, magneto-structural transitions, resistivity ({rho}) and thermopower S(T) behaviour has been investigated in Gd{sub 5}Si{sub x}Ge{sub 4-x} compounds with x=1.7, 2.0, 2.2 and 2.3. Microstructural studies reveal the presence of a Gd{sub 5}(Si,Ge){sub 4} -matrix phase (5:4-type) along with traces of secondary phases (5:5 or 5:3-type). The resistivity behaviour has shown good correlation with the microstructural studies. A large change in thermopower of -8{mu}V/K was obtained at the magneto-structural transition for the x=2 compound. The resistivity and change in thermopower values were high for the alloys with Si/Ge ratio {<=}1 compared to that of the alloys with Si/Ge ratio >1.

  15. Corrosion behaviors of Zn/Al-Mn alloy composite coatings deposited on magnesium alloy AZ31B (Mg-Al-Zn)

    Zhang Jifu; Zhang Wei; Yan Chuanwei; Du Keqin; Wang Fuhui

    2009-01-01

    After being pre-plated a zinc layer, an amorphous Al-Mn alloy coating was applied onto the surface of AZ31B magnesium alloy with a bath of molten salts. Then the corrosion performance of the coated magnesium alloy was examined in 3.5% NaCl solution by potentiodynamic polarization and electrochemical impedance spectroscopy (EIS). The results showed that the single Zn layer was active in the test solution with a high corrosion rate while the Al-Mn alloy coating could effectively protect AZ31B magnesium alloy from corrosion in the solution. The high corrosion resistance of Al-Mn alloy coating was ascribed to an intact and stable passive film formed on the coating. The performances of the passive film on Al-Mn alloy were further investigated by Mott-Schottky curve and X-ray photoelectron spectroscopy (XPS) analysis. It was confirmed that the passive film exhibited n-type semiconducting behavior in 3.5% NaCl solution with a carrier density two orders of magnitude less than that formed on pure aluminum electrode. The XPS analysis indicated that the passive film was mainly composed of AlO(OH) after immersion for long time and the content of Mn was negligible in the outer part of the passive film. Based on the EIS measurement, electronic structure and composition analysis of the passive film, a double-layer structure, with a compact inner oxide and a porous outer layer, of the film was proposed for understanding the corrosion process of passive film, with which the experimental observations might be satisfactorily interpreted.

  16. Structure and corrosion behavior of sputter deposited cerium oxide based coatings with various thickness on Al 2024-T3 alloy substrates

    Liu, Yuanyuan [College of Materials Science and Engineering, Chongqing University, Chongqing 400045 (China); Materials Research Center, Department of Materials Science and Engineering, Missouri University of Science and Technology, Rolla, MO 65409 (United States); Huang, Jiamu, E-mail: huangjiamu@cqu.edu.cn [College of Materials Science and Engineering, Chongqing University, Chongqing 400045 (China); Claypool, James B.; Castano, Carlos E. [Materials Research Center, Department of Materials Science and Engineering, Missouri University of Science and Technology, Rolla, MO 65409 (United States); O’Keefe, Matthew J., E-mail: mjokeefe@mst.edu [Materials Research Center, Department of Materials Science and Engineering, Missouri University of Science and Technology, Rolla, MO 65409 (United States)

    2015-11-15

    Highlights: • Crystalline CeO{sub 2} coatings are deposited on Al 2024-T3 alloys by magnetron sputtering. • The crystal size and internal stress both increased with the thickness of CeO{sub 2} coating. • The ∼210 nm thick coating has the highest adhesion strength to the Al alloy substrate. • The ∼900 nm thick coating increased the corrosion resistance two orders of magnitude. • CeO{sub 2} coatings provide good cathodic inhibition for Al alloys by acting as physical barriers. - Abstract: Cerium oxide based coatings from ∼100 to ∼1400 nm in thickness were deposited onto Al 2024-T3 alloy substrates by magnetron sputtering of a 99.99% pure CeO{sub 2} target. The crystallite size of CeO{sub 2} coatings increased from 15 nm to 46 nm as the coating thickness increased from ∼100 nm to ∼1400 nm. The inhomogeneous lattice strain increased from 0.36% to 0.91% for the ∼100 nm to ∼900 nm thick coatings and slightly decreased to 0.89% for the ∼1400 nm thick coating. The highest adhesion strength to Al alloy substrates was for the ∼210 nm thick coating, due to a continuous film coverage and low internal stress. Electrochemical measurements indicated that sputter deposited crystalline CeO{sub 2} coatings acted as physical barriers that provide good cathodic inhibition for Al alloys in saline solution. The ∼900 nm thick CeO{sub 2} coated sample had the best corrosion performance that increased the corrosion resistance by two orders magnitude and lowered the cathodic current density 30 times compared to bare Al 2024-T3 substrates. The reduced defects and exposed surface, along with suppressed charge mobility, likely accounts for the improved corrosion performance as coating thickness increased from ∼100 nm to ∼900 nm. The corrosion performance decreased for ∼1400 nm thick coatings due in part to an increase in coating defects and porosity along with a decrease in adhesion strength.

  17. The behavior of ZrO2/20%Y2O3 and Al2O3 coatings deposited on aluminum alloys at high temperature regime

    Pintilei, G. L.; Crismaru, V. I.; Abrudeanu, M.; Munteanu, C.; Baciu, E. R.; Istrate, B.; Basescu, N.

    2015-10-01

    Aluminum alloy present numerous advantages like lightness, high specific strength and diversity which recommend them to a high number of applications from different fields. In extreme environments the protection of aluminum alloys is difficult and requires a high number of requirements like high temperature resistance, thermal fatigue resistance, corrosion fatigue resistance and galvanic corrosion resistance. To obtain these characteristics coatings can be applied to the surfaces so they can enhance the mechanical and chemical properties of the parts. In this paper two coatings were considered for deposition on an AA2024 aluminum alloy, ZrO2/20%Y2O3 and Al2O3. To obtain a better adherence of the coating to the base material an additional bond layer of NiCr is used. Both the coatings and bond layer were deposited by atmospheric plasma spraying on the samples. The samples were subjected to a temperature of 500 °C and after that slowly cooled to room temperature. The samples were analyzed by electron microscopy and X-ray diffraction to determine the morphological and phase changes that occurred during the temperature exposure. To determine the stress level in the parts due to thermal expansion a finite element analysis was performed in the same conditions as the tests.

  18. Zn–Mn alloy coatings from acidic chloride bath: Effect of deposition conditions on the Zn–Mn electrodeposition-morphological and structural characterization

    Loukil, N., E-mail: nloukil87@gmail.com; Feki, M.

    2017-07-15

    Highlights: • Zn-Mn co-deposition from an additives-free chloride bath is possible. • Effect of Mn{sup 2+} ion concentration and current density on Zn-Mn electrodeposition and particularly Mn content into Zn-Mn deposits were investigated. • A dimensionless graph model was used to analyze the effect of Mn{sup 2+} ion concentration as well as the applied potential on Zn-Mn nucleation process. • Effect of current density on the morphology and structure of Zn-Mn alloys deposits. • A transition from crystalline to amorphous structure may occur in the Mn alloy electrodeposits at high current densities. - Abstract: Zn–Mn alloy electrodeposition on steel electrode in chloride bath was investigated using cyclic voltammetric, chronopotentiometric and chronoamperometric techniques. Cyclic voltammetries (CV) reveal a deep understanding of electrochemical behaviors of each metal Zn, Mn, proton discharge and Zn–Mn co-deposition. The electrochemical results show that with increasing Mn{sup 2+} ions concentration in the electrolytic bath, Mn{sup 2+} reduction occurs at lower over-potential leading to an enhancement of Mn content into the Zn–Mn deposits. A dimensionless graph model was used to analyze the effect of Mn{sup 2+} ions concentration on Zn–Mn nucleation process. It was found that the nucleation process is not extremely affected by Mn{sup 2+} concentration. Nevertheless, it significantly depends on the applied potential. Several parameters such as Mn{sup 2+} ions concentration, current density and stirring were investigated with regard to the Mn content into the final Zn–Mn coatings. It was found that the Mn content increases with increasing the applied current density j{sub imp} and Mn{sup 2+} ions concentration in the electrolytic bath. However, stirring of the solution decreases the Mn content in the Zn–Mn coatings. The phase structure and surface morphology of Zn–Mn deposits are characterized by means of X-ray diffraction analysis and Scanning

  19. RBS characterization of the deposition of very thin SiGe/SiO2 multilayers by LPCVD

    Munoz-Martin, A.; Climent-Font, A.; Rodriguez, A.; Sangrador, J.; Rodriguez, T.

    2005-01-01

    Multilayer structures consisting of several alternated layers of SiGe and SiO 2 with thickness ranging from 2 or Si as well as the deposition of SiO 2 on Si show negligible incubation times. The deposition of SiO 2 on SiGe, however, exhibits an incubation time of several minutes, which would be related to the oxidation of the surface necessary for the SiO 2 deposition to start. In all cases the film thickness increases linearly with deposition time, thus allowing the growth rates to be determined. These data allow the deposition process of these very thin layers to be accurately controlled

  20. Structural features and properties of the laser-deposited nickel alloy layer on a KhV4F tool steel after heat treatment

    Shcherbakov, V. S.; Dikova, Ts. D.; Stavrev, D. S.

    2017-07-01

    The study and application of the materials that are stable in the temperature range up to 1000°C are necessary to repair forming dies operating in this range. Nickel-based alloys can be used for this purpose. The structural state of a nickel alloy layer deposited onto a KhV4F tool steel and then heat treated is investigated. KhV4F tool steel (RF GOST) samples are subjected to laser deposition using a pulsed Nd:YAG laser. A nickel-based material (0.02C-73.8Ni-2.5Nb-19.5Cr-1.9Fe-2.8Mn) is employed for laser deposition. After laser deposition, the samples are subjected to heat treatment at 400°C for 5 h, 600°C for 1 h, 800°C for 1 h, and 1000°C for 1 h. The microstructure, the phase composition, and the microhardness of the deposited layer are studied. The structure of the initial deposited layer has relatively large grains (20-40 μm in size). The morphology is characterized by a cellular-dendritic structure in the transition zone. The following two structural constituents with a characteristic dendritic structure are revealed: a supersaturated nickel-based γ solid solution and a chromium-based bcc α solid solution. In the initial state and after heat treatment, the hardness of the deposited material (210-240 HV 0.1) is lower than the hardness of the base material (400-440 HV 0.1). Only after heat treatment at 600°C for 1 h, the hardness increases to 240-250 HV0.1. Structure heredity in the form of a dendritic morphology is observed at temperatures of 400, 600, and 800°C. The following sharp change in the structural state is detected upon heat treatment at 1000°C for 1 h: the dendritic morphology changes into a typical α + γ crystalline structure. The hardness of the base material decreases significantly to 160-180 HV 0.1. The low hardness of the deposited layer implies the use of the layer material in limited volume to repair the forming surfaces of dies and molds for die casting. However, the high ductility of the deposited layer of the nickel

  1. Electro-deposition metallic tungsten coatings in a Na{sub 2}WO{sub 4}-WO{sub 3} melt on copper based alloy substrate

    Liu, Y.H., E-mail: dreamerhong77@126.com [School of Materials Science and Engineering, University of Science and Technology Beijing, 30 Xueyuan Road, Haidian District, Beijing 100083 (China); Zhang, Y.C.; Liu, Q.Z.; Li, X.L.; Jiang, F. [School of Materials Science and Engineering, University of Science and Technology Beijing, 30 Xueyuan Road, Haidian District, Beijing 100083 (China)

    2012-11-15

    Highlights: Black-Right-Pointing-Pointer The tungsten coating (>1 mm) was obtained by electro-deposition method in molten salt. Black-Right-Pointing-Pointer Different thickness tungsten coatings were obtained by using different durations. Black-Right-Pointing-Pointer Good performance of coating was obtained when pulse parameters were modulated. - Abstract: The tungsten coating was prepared by electro-deposition technique on copper alloy substrate in a Na{sub 2}WO{sub 4}-WO{sub 3} melt. The coating's surface and cross-section morphologies as well as its impurities were investigated by XPS, SEM and line analysis. Various plating durations were investigated in order to obtain an optimal coating's thickness. The results demonstrated that the electro-deposited coating was compact, voidless, crackless and free from impurities. The tungsten coating's maximum Vickers hardness was measured to be 520 HV. The tungsten coating's minimum oxygen content was determined to be 0.018 wt%. Its maximum thickness was measured to be 1043.67 {mu}m when the duration of electrolysis was set to 100 h. The result of this study has demonstrated the feasibility of having thicker tungsten coatings on copper alloy substrates. These electrodeposited tungsten coatings can be potentially implemented as reliable armour for the medium heat flux plasma facing component (PFC).

  2. Growth and properties of Al-rich InxAl1-xN ternary alloy grown on GaN template by metalorganic chemical vapour deposition

    Oh, Tae Su; Suh, Eun-Kyung; Kim, Jong Ock; Jeong, Hyun; Lee, Yong Seok; Nagarajan, S; Lim, Kee Young; Hong, Chang-Hee

    2008-01-01

    An Al-rich In x Al 1-x N ternary alloy was grown on a GaN template by metal-organic chemical vapour deposition (MOCVD). The GaN template was fabricated on a c-plane sapphire with a low temperature GaN nucleation layer. The growth of the 300 nm thick In x Al 1-x N layer was carried out under various growth temperatures and pressures. The surface morphology and the InN molar fraction of the In x Al 1-x N layer were assessed by using atomic force microscopy (AFM) and high resolution x-ray diffraction, respectively. The AFM surface images of the In x Al 1-x N ternary alloy exhibited quantum dot-like grains caused by the 3D island growth mode. The grains, however, disappeared rapidly by increasing diffusion length and mobility of the Al adatoms with increasing growth temperature and the full width at half maximum value of ternary peaks in HR-XRD decreased with decreasing growth pressure. The MOCVD growth condition with the increased growth temperature and decreased growth pressure would be effective to grow the In x Al 1-x N ternary alloy with a smooth surface and improved quality. The optical band edge of In x Al 1-x N ternary alloys was estimated by optical absorbance and, based on the results of HR-XRD and optical absorbance measurements, we obtained the bowing parameter of the In x Al 1-x N ternary alloy at b = 5.3 eV, which was slightly larger than that of previous reports

  3. Silicon-substituted hydroxyapatite coating with Si content on the nanotube-formed Ti–Nb–Zr alloy using electron beam-physical vapor deposition

    Jeong, Yong-Hoon [Division of Restorative, Prosthetic and Primary Care Dentistry, College of Dentistry, The Ohio State University, 305 W. 12th Ave., Columbus, OH (United States); Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Choe, Han-Cheol, E-mail: hcchoe@chosun.ac.kr [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Brantley, William A. [Division of Restorative, Prosthetic and Primary Care Dentistry, College of Dentistry, The Ohio State University, 305 W. 12th Ave., Columbus, OH (United States)

    2013-11-01

    The purpose of this study was to investigate the electrochemical characteristics of silicon-substituted hydroxyapatite coatings on the nanotube-formed Ti–35Nb–10Zr alloy. The silicon-substituted hydroxyapatite (Si–HA) coatings on the nanotube structure were deposited by electron beam-physical vapor deposition and anodization methods, and biodegradation properties were analyzed by potentiodynamic polarization and electrochemical impedance spectroscopy measurement. The surface characteristics were analyzed by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction (XRD). The Si–HA layers were deposited with rough features having highly ordered nanotube structures on the titanium alloy substrate. The thickness of the Si–HA coating was less than that of the HA coating. The XRD results confirmed that the Si–HA coating on the nanotube structure consisted of TiO{sub 2} anatase, TiO{sub 2} rutile, hydroxyapatite, and calcium phosphate silicate. The Si–HA coating surface exhibited lower I{sub corr} than the HA coating, and the polarization resistance was increased by substitution of silicon in hydroxyapatite. - Highlights: • Silicon substituted hydroxyapatite (Si–HA) was coated on nanotubular titanium alloy. • The Si–HA coating thickness was less than single hydroxyapatite (HA) coating. • Si–HA coatings consisted of TiO{sub 2}, HA, and Ca{sub 5}(PO{sub 4}){sub 2}SiO{sub 4}. • Polarization resistance of the coating was increased by Si substitution in HA.

  4. Numerical analysis of temperature profile and thermal-stress during excimer laser induced heteroepitaxial growth of patterned amorphous silicon and germanium bi-layers deposited on Si(100)

    Conde, J.C., E-mail: jconde@uvigo.e [Dpto. Fisica Aplicada, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, E-36310 Vigo (Spain); Martin, E. [Dpto. de Mecanica, Maquinas y Motores Termicos y Fluidos, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, E-36310 Vigo (Spain); Gontad, F.; Chiussi, S. [Dpto. Fisica Aplicada, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, E-36310 Vigo (Spain); Fornarini, L. [Enea-Frascati, Via Enrico Fermi 45, I-00044 Frascati (Roma) (Italy); Leon, B. [Dpto. Fisica Aplicada, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, E-36310 Vigo (Spain)

    2010-02-26

    A Finite Element Method (FEM) study of the coupled thermal-stress during the heteroepitaxial growth induced by excimer laser radiation of patterned amorphous hydrogenated silicon (a-Si:H) and germanium (a-Ge:H) bi-layers deposited on a Si(100) wafer is presented. The ArF (193 nm) excimer laser provides high energy densities during very short laser pulse (20 ns) provoking, at the same time, melting and solidification phenomena in the range of several tenths of nanoseconds. These phenomena play an important role during the growth of heteroepitaxial SiGe structures characterized by high Ge concentration buried under a Si rich surface. In addition, the thermal-stresses that appear before the melting and after the solidification processes can also affect to the epitaxial growth of high quality SiGe alloys in these patterned structures and, in consequence, it is necessary to predict their effects. The aim of this work is to estimate the energy threshold and the corresponding thermal-stresses in the interfaces and the borders of these patterned structures.

  5. Numerical analysis of temperature profile and thermal-stress during excimer laser induced heteroepitaxial growth of patterned amorphous silicon and germanium bi-layers deposited on Si(100)

    Conde, J.C.; Martin, E.; Gontad, F.; Chiussi, S.; Fornarini, L.; Leon, B.

    2010-01-01

    A Finite Element Method (FEM) study of the coupled thermal-stress during the heteroepitaxial growth induced by excimer laser radiation of patterned amorphous hydrogenated silicon (a-Si:H) and germanium (a-Ge:H) bi-layers deposited on a Si(100) wafer is presented. The ArF (193 nm) excimer laser provides high energy densities during very short laser pulse (20 ns) provoking, at the same time, melting and solidification phenomena in the range of several tenths of nanoseconds. These phenomena play an important role during the growth of heteroepitaxial SiGe structures characterized by high Ge concentration buried under a Si rich surface. In addition, the thermal-stresses that appear before the melting and after the solidification processes can also affect to the epitaxial growth of high quality SiGe alloys in these patterned structures and, in consequence, it is necessary to predict their effects. The aim of this work is to estimate the energy threshold and the corresponding thermal-stresses in the interfaces and the borders of these patterned structures.

  6. High-rate deposition of high-quality Sn-doped In2O3 films by reactive magnetron sputtering using alloy targets

    Oka, Nobuto; Kawase, Yukari; Shigesato, Yuzo

    2012-01-01

    Sn-doped In 2 O 3 (ITO) films were deposited on heated (200 °C) fused silica glass substrates by reactive DC sputtering with mid-frequency pulsing (50 kHz) and a plasma control unit combined with a feedback system of the optical emission intensity for the atomic O* line at 777 nm. A planar In–Sn alloy target was connected to the switching unit, which was operated in the unipolar pulse mode. The power density on the target was maintained at 4.4 W cm −2 during deposition. The feedback system precisely controlled the oxidation of the target surface in “the transition region.” The ITO film with lowest resistivity (3.1 × 10 −4 Ω cm) was obtained with a deposition rate of 310 nm min −1 and transmittance in the visible region of approximately 80%. The deposition rate was about 6 times higher than that of ITO films deposited by conventional sputtering using an oxide target.

  7. In-plane aligned YBCO film on textured YSZ buffer layer deposited on NiCr alloy tape by laser ablation with only O+ ion beam assistance

    Xin Tang Huang

    2000-01-01

    High critical current density and in-plane aligned YBa 2 Cu 3 O 7-x (YBCO) film on a textured yttria-stabilized zirconia (YSZ) buffer layer deposited on NiCr alloy (Hastelloy c-275) tape by laser ablation with only O + ion beam assistance was fabricated. The values of the x-ray phi-scan full width at half-maximum (FWHM) for YSZ(202) and YBCO(103) are 18 deg. and 11 deg., respectively. The critical current density of YBCO film is 7.9 x 105 A cm -2 at liquid nitrogen temperature and zero field, and its critical temperature is 90 K. (author)

  8. Corrosion and runoff rates of Cu and three Cu-alloys in marine environments with increasing chloride deposition rate.

    Odnevall Wallinder, Inger; Zhang, Xian; Goidanich, Sara; Le Bozec, Nathalie; Herting, Gunilla; Leygraf, Christofer

    2014-02-15

    Bare copper sheet and three commercial Cu-based alloys, Cu15Zn, Cu4Sn and Cu5Al5Zn, have been exposed to four test sites in Brest, France, with strongly varying chloride deposition rates. The corrosion rates of all four materials decrease continuously with distance from the coast, i.e. with decreasing chloride load, and in the following order: Cu4Sn>Cu sheet>Cu15Zn>Cu5Al5Zn. The patina on all materials was composed of two main layers, Cu2O as the inner layer and Cu2(OH)3Cl as the outer layer, and with a discontinuous presence of CuCl in between. Additional minor patina constituents are SnO2 (Cu4Sn), Zn5(OH)6(CO3)2 (Cu15Zn and Cu5Al5Zn) and Zn6Al2(OH)16CO3·4H2O/Zn2Al(OH)6Cl·2H2O/Zn5Cl2(OH)8·H2O and Al2O3 (Cu5Al5Zn). The observed Zn- and Zn/Al-containing corrosion products might be important factors for the lower sensitivity of Cu15Zn and Cu5Al5Zn against chloride-induced atmospheric corrosion compared with Cu sheet and Cu4Sn. Decreasing corrosion rates with exposure time were observed for all materials and chloride loads and attributed to an improved adherence with time of the outer patina to the underlying inner oxide. Flaking of the outer patina layer was mainly observed on Cu4Sn and Cu sheet and associated with the gradual transformation of CuCl to Cu2(OH)3Cl of larger volume. After three years only Cu5Al5Zn remains lustrous because of a patina compared with the other materials that appeared brownish-reddish. Significantly lower release rates of metals compared with corresponding corrosion rates were observed for all materials. Very similar release rates of copper from all four materials were observed during the fifth year of marine exposure due to an outer surface patina that with time revealed similar constituents and solubility properties. Copyright © 2013 The Authors. Published by Elsevier B.V. All rights reserved.

  9. Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector

    Rahim, Alhan Farhanah Abd; Zainal Badri, Nur'Amirah; Radzali, Rosfariza; Mahmood, Ainorkhilah

    2017-11-01

    In this paper, an investigation of design and simulation of silicon germanium (SiGe) islands on silicon (Si) was presented for potential visible metal semiconductor metal (MSM) photodetector. The characterization of the performances in term of the structural, optical and electrical properties of the structures was analyzed from the simulation results. The project involves simulation using SILVACO Technology Computer Aided Design (TCAD) tools. The different structures of the silicon germanium (SiGe) island on silicon substrate were created, which were large SiGe, small SiGe, combination SiGe and bulk Ge. All the structures were tested for potential Metal Semiconductor Metal (MSM) photodetector. The extracted data such as current versus voltage characteristic, current gain and spectral response were obtained using ATLAS SILVACO tools. The performance of SiGe island structures and bulk Ge on Si substrate as (MSM) photodetector was evaluated by photo and dark current-voltage (I-V) characteristics. It was found that SiGe islands exhibited higher energy band gap compared to bulk Ge. The SiGe islands current-voltage characteristics showed improved current gain compared to bulk Ge. Specifically the enhancement of the islands gain was contributed by the enhanced photo currents and lower dark currents. The spectral responses of the SiGe islands showed peak response at 590 nm (yellow) which is at the visible wavelength. This shows the feasibility of the SiGe islands to be utilized for visible photodetections.

  10. Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector

    Abd Rahim Alhan Farhanah

    2017-01-01

    Full Text Available In this paper, an investigation of design and simulation of silicon germanium (SiGe islands on silicon (Si was presented for potential visible metal semiconductor metal (MSM photodetector. The characterization of the performances in term of the structural, optical and electrical properties of the structures was analyzed from the simulation results. The project involves simulation using SILVACO Technology Computer Aided Design (TCAD tools. The different structures of the silicon germanium (SiGe island on silicon substrate were created, which were large SiGe, small SiGe, combination SiGe and bulk Ge. All the structures were tested for potential Metal Semiconductor Metal (MSM photodetector. The extracted data such as current versus voltage characteristic, current gain and spectral response were obtained using ATLAS SILVACO tools. The performance of SiGe island structures and bulk Ge on Si substrate as (MSM photodetector was evaluated by photo and dark current-voltage (I-V characteristics. It was found that SiGe islands exhibited higher energy band gap compared to bulk Ge. The SiGe islands current-voltage characteristics showed improved current gain compared to bulk Ge. Specifically the enhancement of the islands gain was contributed by the enhanced photo currents and lower dark currents. The spectral responses of the SiGe islands showed peak response at 590 nm (yellow which is at the visible wavelength. This shows the feasibility of the SiGe islands to be utilized for visible photodetections.

  11. Production of hard hydrophilic Ni-B coatings on hydrophobic Ni-Ti and Ti-6Al-4V alloys by electroless deposition

    Buelbuel, Ferhat; Karabudak, Filiz; Yesildal, Ruhi [Ataturk Univ., Erzurum (Turkey). Mechanical Engineering Dept.

    2017-07-01

    This paper is mainly focused on the wetting state of liquid droplets on Ni-Ti and Ti-6Al-4V hierarchical structured hydrophobic surfaces in micro/nanoscale. Electroless Ni-B deposition as a surface coating treatment has recently drawn considerable attention of researchers owing to remarkable advantages when compared with other techniques such as low price, conformal ability to coat substrates, good bath stability and relatively easier plating process control. The Ni-Ti and Ti-6Al-4V substrates were plated by electroless Ni-B plating process. The coated films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), hardness testing and static contact angle measurement. Results obtained from the analyses show that electroless Ni-B deposition may improve the hardness and wettability of the Ni-Ti and Ti-6Al-4V alloy surfaces.

  12. The enhancement of the interdiffusion in Si/Ge amorphous artificial multilayers by additions of B and Au

    Park, B.; Spaepen, F.; Poate, J.M.; Jacobson, D.C.

    1990-01-01

    Amorphous Si/amorphous Ge artificial multilayers were prepared by ion beam sputtering. Boron or gold impurities were introduced into the Si/Ge multilayers by ion implantation or during the sputtering deposition. Diffusion coefficients were determined by measuring the decrease in the intensity of the first order X-ray diffraction peak resulting from the composition modulation. It was found that the interdiffusion of Si and Ge in their amorphous phase can be enhanced by doping. The enhancement factor is independent of the degree of structural relaxation, as observed by the decrease of diffusivity with annealing time, of the amorphous phase. A model is proposed that describes this behavior in terms of electronic effects, introduced by the dopants, on the pre-existing structural defects governing diffusion

  13. Thin SiGe virtual substrates for Ge heterostructures integration on silicon

    Cecchi, S.; Chrastina, D.; Frigerio, J.; Isella, G.; Gatti, E.; Guzzi, M.; Müller Gubler, E.; Paul, D. J.

    2014-01-01

    The possibility to reduce the thickness of the SiGe virtual substrate, required for the integration of Ge heterostructures on Si, without heavily affecting the crystal quality is becoming fundamental in several applications. In this work, we present 1 μm thick Si 1−x Ge x buffers (with x > 0.7) having different designs which could be suitable for applications requiring a thin virtual substrate. The rationale is to reduce the lattice mismatch at the interface with the Si substrate by introducing composition steps and/or partial grading. The relatively low growth temperature (475 °C) makes this approach appealing for complementary metal-oxide-semiconductor integration. For all the investigated designs, a reduction of the threading dislocation density compared to constant composition Si 1−x Ge x layers was observed. The best buffer in terms of defects reduction was used as a virtual substrate for the deposition of a Ge/SiGe multiple quantum well structure. Room temperature optical absorption and photoluminescence analysis performed on nominally identical quantum wells grown on both a thick graded virtual substrate and the selected thin buffer demonstrates a comparable optical quality, confirming the effectiveness of the proposed approach

  14. Quantitative SIMS analysis of SiGe composition with low energy O2+ beams

    Jiang, Z.X.; Kim, K.; Lerma, J.; Corbett, A.; Sieloff, D.; Kottke, M.; Gregory, R.; Schauer, S.

    2006-01-01

    This work explored quantitative analyses of SiGe films on either Si bulk or SOI wafers with low energy SIMS by assuming a constant ratio between the secondary ion yields of Si + and Ge + inside SiGe films. SiGe samples with Ge contents ranging from 15 to 65% have been analyzed with a 1 keV O 2 + beam at normal incidence. For comparison, the samples were also analyzed with RBS and/or AES. The Ge content as measured with SIMS, based on a single SiGe/Si or SiGe/SOI standard, exhibited good agreement with the corresponding RBS and AES data. It was concluded that SIMS was capable of providing accurate characterization of the SiGe composition with the Ge content up to 65%

  15. Heavy Ion Microbeam and Broadbeam Transients in SiGe HBTs

    Pellish, Jonathan A.; Reed, Robert A.; McMorrow, Dale; Vizkelethy, Gyorgy; Dodd, Paul E.; Ferlet-Cavrois, Veronique; Baggio, Jacques; Paillet, Philippe; Duhamel, Olivier; Phillips, Stanley D.; hide

    2009-01-01

    SiGe HBT heavy ion current transients are measured using microbeam and both high- and low-energy broadbeam sources. These new data provide detailed insight into the effects of ion range, LET, and strike location.

  16. Surface plasmon resonances of Ag-Au alloy nanoparticle films grown by sequential pulsed laser deposition at different compositions and temperatures

    Verma, Shweta, E-mail: shwetaverma@rrcat.gov.in; Rao, B. T.; Detty, A. P.; Kukreja, L. M. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India); Ganesan, V.; Phase, D. M. [UGC-DAE Consortium for Scientific Research, Indore 452 001 (India); Rai, S. K. [Indus Synchrotons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India); Bose, A.; Joshi, S. C. [Proton Linac and Superconducting Cavities Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India)

    2015-04-07

    We studied localized surface plasmon resonances (LSPR) at different compositions, substrate temperatures, and mass thicknesses of Ag-Au alloy nanoparticle films grown by sequential pulsed laser deposition. The LSPRs were pronounced at all compositions of the films grown at high substrate temperature of about 300 °C as compared to those grown at room temperature. The alloy formation and composition of the films were determined using X-ray photoelectron and energy dispersive spectroscopy. Films' mass thickness and compositional uniformity along the thickness were determined using X-ray reflectometry and secondary ion mass spectroscopy. Atomic force microscopic analysis revealed the formation of densely packed nanoparticles of increasing size with the number of laser ablation pulses. The LSPR wavelength red shifted with increasing either Au percentage or film mass thickness and corresponding LSPR tuning was obtained in the range of 450 to 690 nm. The alloy dielectric functions obtained from three different models were compared and the optical responses of the nanoparticle films were calculated from modified Yamaguchi effective medium theory. The tuning of LSPR was found to be due to combined effect of change in intrinsic and extrinsic parameters mainly the composition, morphology, particle-particle, and particle-substrate interactions.

  17. Self-assembled GaN nano-column grown on Si(111) substrate using Au+Ga alloy seeding method by metalorganic chemical vapor deposition

    Shim, Byung-Young; Ko, Eun-A; Song, Jae-Chul; Kang, Dong-Hun; Kim, Dong-Wook; Lee, In-Hwan; Kannappan, Santhakumar; Lee, Cheul-Ro

    2007-01-01

    Single-crystal GaN nano-column arrays were grown on Au-coated silicon (111) substrate by Au-Ga alloy seeding method using metalorganic chemical vapor deposition (MOCVD). The nano-column arrays were studied as a function of growth parameters and Au thin film thickness. The diameter and length of the as-grown nano-column vary from 100 to 500 nm and 4 to 6 μm, respectively. The surface morphology and optical properties of the nano-columns were investigated using scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), cathodoluminescence (CL) and photoluminescence (PL). The Au+Ga alloy droplets were found to be uniformly distributed on silicon surface. Further, SEM image reveals a vertical growth and cylindrical in shape GaN nano-column. The chemical composition of the nano-column, which composed of gallium and nitrogen ions, was estimated by EDX. CL reveals a strong band edge emission from the GaN nano-column. PL spectra show a peak at 365.7 nm with a full-width half maximum (FWHM) of 65 meV which indicates good optical quality GaN nano-column with low dislocation density. Our results suggest that single crystal GaN nano-column can be grown on Au+Ga alloy on silicon substrate with a low dislocation density for better device performances. (author)

  18. SiGe HBTs Optimization for Wireless Power Amplifier Applications

    Pierre-Marie Mans

    2010-01-01

    Full Text Available This paper deals with SiGe HBTs optimization for power amplifier applications dedicated to wireless communications. In this work, we investigate the fT-BVCEO tradeoff by various collector optimization schemes such as epilayer thickness and dopant concentration, and SIC and CAP characteristics. Furthermore, a new trapezoidal base Germanium (Ge profile is proposed. Thanks to this profile, precise control of Ge content at the metallurgical emitter-base junction is obtained. Gain stability is obtained for a wide range of temperatures through tuning the emitter-base junction Ge percent. Finally, a comprehensive investigation of Ge introduction into the collector (backside Ge profile is conducted in order to improve the fT values at high injection levels.

  19. Electrochemical Evaluation of Si-Incorporated Diamond-Like Carbon (DLC) Coatings Deposited on STS 316L and Ti Alloy for Biomedical Applications

    Kim, Jung Gu; Lee, Kwang Ryeol; Kim, Young Sik; Hwang, Woon Suk

    2007-01-01

    DLC coatings have been deposited onto substrate of STS 316L and Ti alloy using r.f. PACVD (plasma-assisted chemical vapor deposition) with a mixture of C 6 H 6 and SiH 4 as the process gases. Corrosion performance of DLC coatings was investigated by electrochemical techniques (potentiodynamic polarization test and electrochemical impedance spectroscopy) and surface analysis (scanning electron microscopy). the electrolyte used in this test was a 0.89% NaCl solution of pH 7.4 at temperature 37 .deg. C. The porosity and protective efficiency of DLC coatings were obtained using potentiodynamic polarization test. Moreover, the delamination area and volume fraction of water uptake of DLC coatings ass a function of immersion time were calculated using electrochemical impedance spectroscopy. This study provides the reliable and quantitative data for assessment of the effect of substrate on corrosion performance of Si-DLC coatings. the results showed that Si-DLC coating on Ti alloy could improve corrosion resistance more than that on STS 316L in the simulated body fluid environment. This could be attributed to the formation of a dense and low-porosity coating, which impedes the penetration of water and ions

  20. Effects of pH and temperature on the deposition properties of stannate chemical conversion coatings formed by the potentiostatic technique on AZ91 D magnesium alloy

    Elsentriecy, Hassan H.; Azumi, Kazuhisa; Konno, Hidetaka

    2008-01-01

    The effects of pH and temperature of a stannate bath on the quality of stannate chemical conversion coatings formed on AZ91 D magnesium alloy by using the potentiostatic polarization technique at E = -1.1 V were investigated in order to improve uniformity and corrosion protection performance of the coating films. It was found that the uniformity and corrosion resistance of coating films deposited by potentiostatic polarization were closely associated with pH and temperature of the coating bath. The pH and temperature to obtain the best coating film were investigated as a function of corrosion protection performance evaluated by curves of potentiodynamic anodic polarization conducted in borate buffer solution. Scanning electron microscope observation and electrochemical corrosion tests of the stannate-coated samples confirmed significant improvement in uniformity and corrosion resistivity of coating films deposited by the potentiostatic technique by modifying the pH and temperature of the coating bath. It was also found that uniformity and corrosion resistivity of the coating films deposited by the potentiostatic technique were considerably improved compared to those of coatings deposited by the simple immersion method at the best conditions of pH and temperature of the coating bath

  1. The behavior of ZrO_2/20%Y_2O_3 and Al_2O_3 coatings deposited on aluminum alloys at high temperature regime

    Pintilei, G.L.; Crismaru, V.I.; Abrudeanu, M.; Munteanu, C.; Baciu, E.R.; Istrate, B.; Basescu, N.

    2015-01-01

    Highlights: • In both the ZrO_2/20%Y_2O_3 and Al_2O_3 coatings the high temperature caused a decrease of pores volume and a lower thickness of the interface between successive splats. • The NiCr bond layer in the sample with a ZrO_2/20%Y_2O_3 suffered a fragmentation due to high temperature exposure and thermal expansion which can lead to coating exfoliation. • The NiCr bond layer in the sample with an Al_2O_3 coating showed an increase of pore volume due to high temperature. - Abstract: Aluminum alloy present numerous advantages like lightness, high specific strength and diversity which recommend them to a high number of applications from different fields. In extreme environments the protection of aluminum alloys is difficult and requires a high number of requirements like high temperature resistance, thermal fatigue resistance, corrosion fatigue resistance and galvanic corrosion resistance. To obtain these characteristics coatings can be applied to the surfaces so they can enhance the mechanical and chemical properties of the parts. In this paper two coatings were considered for deposition on an AA2024 aluminum alloy, ZrO_2/20%Y_2O_3 and Al_2O_3. To obtain a better adherence of the coating to the base material an additional bond layer of NiCr is used. Both the coatings and bond layer were deposited by atmospheric plasma spraying on the samples. The samples were subjected to a temperature of 500 °C and after that slowly cooled to room temperature. The samples were analyzed by electron microscopy and X-ray diffraction to determine the morphological and phase changes that occurred during the temperature exposure. To determine the stress level in the parts due to thermal expansion a finite element analysis was performed in the same conditions as the tests.

  2. Ultra-low Thermal Conductivity in Si/Ge Hierarchical Superlattice Nanowire.

    Mu, Xin; Wang, Lili; Yang, Xueming; Zhang, Pu; To, Albert C; Luo, Tengfei

    2015-11-16

    Due to interfacial phonon scattering and nanoscale size effect, silicon/germanium (Si/Ge) superlattice nanowire (SNW) can have very low thermal conductivity, which is very attractive for thermoelectrics. In this paper, we demonstrate using molecular dynamics simulations that the already low thermal conductivity of Si/Ge SNW can be further reduced by introducing hierarchical structure to form Si/Ge hierarchical superlattice nanowire (H-SNW). The structural hierarchy introduces defects to disrupt the periodicity of regular SNW and scatters coherent phonons, which are the key contributors to thermal transport in regular SNW. Our simulation results show that periodically arranged defects in Si/Ge H-SNW lead to a ~38% reduction of the already low thermal conductivity of regular Si/Ge SNW. By randomizing the arrangement of defects and imposing additional surface complexities to enhance phonon scattering, further reduction in thermal conductivity can be achieved. Compared to pure Si nanowire, the thermal conductivity reduction of Si/Ge H-SNW can be as large as ~95%. It is concluded that the hierarchical structuring is an effective way of reducing thermal conductivity significantly in SNW, which can be a promising path for improving the efficiency of Si/Ge-based SNW thermoelectrics.

  3. Effect of a ZrO{sub 2} coating deposited by the sol–gel method on the resistance of FeCrAl alloy in high-temperature oxidation conditions

    Chęcmanowski, Jacek Grzegorz, E-mail: jacek.checmanowski@pwr.wroc.pl [Wrocław University of Technology, Faculty of Chemistry, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław (Poland); Szczygieł, Bogdan, E-mail: bogdan.szczygiel@pwr.wroc.pl [Wrocław University of Technology, Faculty of Chemistry, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław (Poland)

    2013-05-15

    One-, three- and five-layer protective ZrO{sub 2} coatings were deposited on a FeCrAl alloy base by the sol–gel method. A zirconium(IV) isopropoxide isopropanol complex was used as the zirconium precursor. It has been shown that zirconium in the amount of 0.3–0.5 wt.% improves the resistance of FeCrAl alloy in high-temperature oxidation conditions (in air at T = 1060 °C for t = 2400 h). Even a very low Zr content affects the morphology, porosity and composition of the forming scale (SEM, EDS). An analysis of the chemical composition of the material after oxidation indicated to-core Zr diffusion. The presence of zirconium prevents catastrophic corrosion of the FeCrAl alloy during oxidation. In the case of the alloy without the reactive element (Zr) this type of corrosion occurred after about 1800 h. The oxidation of the FeCrAl alloy covered with ZrO{sub 2} coatings proceeds in three stages. In the first stage, lasting about 50 h, the mass of the sample grows rapidly, then for 700 h the mass changes minimally and in the third stage the oxidation proceeds according to a parabolic dependence. The presence of Zr on the surface of the FeCrAl alloy significantly contributes to the protective effect of the coatings. - Highlights: ► Multilayer ZrO{sub 2} coatings were deposited on FeCrAl alloy by sol–gel method. ► Study of alloy composition indicates to-core Zr diffusion in high temperature. ► Even very low content affects morphology and porosity of forming scale. ► Zirconium improves the resistance of FeCrAl alloy in high temperature conditions. ► Presence of ZrO{sub 2} prevents catastrophic corrosion of FeCrAl alloy during oxidation.

  4. Formation of chemical compounds under vacuum plasma-arc deposition of nickel and its alloy onto piezoceramics

    Grinchenko, V.T.; Lyakhovich, T.K.; Prosina, N.I.; Khromov, S.M.

    1988-01-01

    The phase composition of the transition layer appearing during vacuum-arc coating of nickel and nickel alloy with copper on barium titanate and lead zirconate-titanate is identified. During vacuum plasma-arc coating of nickel and its alloy at the boundary with barium titanate and lead zirconate-titanate the Ni 2 Ti 4 O compound appears which has the crystal lattice type identical with substrate with the parity of lattice parameters. The transition layer contains nickel oxides and NiTiO 3 in the case of barium titanate. When titanate content in substrate increases the zone of reaction diffusion increases in value and becomes more complicate in composition

  5. Electrophoretic deposition of hybrid coatings on aluminum alloy by combining 3-aminopropyltrimethoxysilan to silicon–zirconium sol solutions for corrosion protection

    Yu, Mei; Xue, Bing; Liu, Jianhua, E-mail: yumei@buaa.edu.cn; Li, Songmei; Zhang, You

    2015-09-01

    Electrophoretic deposition (EPD) silicon–zirconium organic–inorganic hybrid coatings were applied on LC4 aluminum alloy for corrosion protection. 3-Glycidoxypropyl-trimethoxysilane (GTMS) and Zirconium (IV) n-propoxide (TPOZ) were used as precursors. 3-Aminopropyl-trimethoxysilane (APS) was added to enhance the corrosion protective performance of the coatings. Scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS) and Fourier transform infrared spectroscopy (FTIR) were employed to characterize morphology, microstructure and component. The results show that the addition of APS leads to the enhanced migration and deposition of positively charged colloidal particles on the surface of metal substrate, which results in the thickness increasing of coatings. However, loading an excessive amount of APS gives a heterogeneous coating surface. The corrosion protective performance of coatings were measured by electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization. The results indicate that the addition of APS improves corrosion protective performance of coatings. The optimal addition content of APS is about 15%. The 15% APS coating is uniform and dense, as well as has good corrosion protective performance. The impedance value (1.58 × 10{sup 5} Ω·cm{sup 2}, at the lowest frequency) of 15% APS coating is half order of magnitude higher than that of coating without APS, and 15% APS coating always keeps the best corrosion protective performance with prolonged immersion time. This kind of coating is identified with “double-structure” properties based on the analysis of EIS and potentiodynamic polarization. Furthermore, the equivalent circuit results indicate that the intermediate oxide layer plays a main role in corrosion protection. - Highlights: • Electrophoretic deposition hybrid coatings are prepared on LC4 aluminum alloy. • 3-Aminopropyl-trimethoxysilane (APS) enhances the corrosion protective performance. • The

  6. Electrophoretic deposition of hybrid coatings on aluminum alloy by combining 3-aminopropyltrimethoxysilan to silicon–zirconium sol solutions for corrosion protection

    Yu, Mei; Xue, Bing; Liu, Jianhua; Li, Songmei; Zhang, You

    2015-01-01

    Electrophoretic deposition (EPD) silicon–zirconium organic–inorganic hybrid coatings were applied on LC4 aluminum alloy for corrosion protection. 3-Glycidoxypropyl-trimethoxysilane (GTMS) and Zirconium (IV) n-propoxide (TPOZ) were used as precursors. 3-Aminopropyl-trimethoxysilane (APS) was added to enhance the corrosion protective performance of the coatings. Scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS) and Fourier transform infrared spectroscopy (FTIR) were employed to characterize morphology, microstructure and component. The results show that the addition of APS leads to the enhanced migration and deposition of positively charged colloidal particles on the surface of metal substrate, which results in the thickness increasing of coatings. However, loading an excessive amount of APS gives a heterogeneous coating surface. The corrosion protective performance of coatings were measured by electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization. The results indicate that the addition of APS improves corrosion protective performance of coatings. The optimal addition content of APS is about 15%. The 15% APS coating is uniform and dense, as well as has good corrosion protective performance. The impedance value (1.58 × 10 5 Ω·cm 2 , at the lowest frequency) of 15% APS coating is half order of magnitude higher than that of coating without APS, and 15% APS coating always keeps the best corrosion protective performance with prolonged immersion time. This kind of coating is identified with “double-structure” properties based on the analysis of EIS and potentiodynamic polarization. Furthermore, the equivalent circuit results indicate that the intermediate oxide layer plays a main role in corrosion protection. - Highlights: • Electrophoretic deposition hybrid coatings are prepared on LC4 aluminum alloy. • 3-Aminopropyl-trimethoxysilane (APS) enhances the corrosion protective performance. • The coating

  7. Highly-enhanced reflow characteristics of sputter deposited Cu alloy thin films for large scale integrated interconnections

    Onishi, Takashi [Advanced Technology Information Center, Shinko Research Co., Ltd., 2-7, 4-Chome, Iwaya-Nakamachi, Nada-ku, Kobe 657-0845 (Japan); Mizuno, Masao [Technical Development Group, Electronics Research Laboratory, Kobe Steel, Ltd., 5-5, Takatsukadai 1-chome, Nishi-ku, Kobe 651-2271 (Japan); Yoshikawa, Tetsuya; Munemasa, Jun [Machinery and Engineering Company, Kobe Steel, Ltd., 2-3-1, Shinhama, Arai-cho, Takasago 676-8670 (Japan); Mizuno, Masataka; Kihara, Teruo; Araki, Hideki [Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1, Yamadaoka, Suita 565-0871 (Japan); Shirai, Yasuharu [Department of Materials Science and Engineering, Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501 (Japan)

    2011-08-01

    An attempt to improve the reflow characteristics of sputtered Cu films was made by alloying the Cu with various elements. We selected Y, Sb, Nd, Sm, Gd, Dy, In, Sn, Mg, and P for the alloys, and ''the elasto-plastic deformation behavior at high temperature'' and ''the filling level of Cu into via holes'' were estimated for Cu films containing each of these elements. From the results, it was found that adding a small amount of Sb or Dy to the sputtered Cu was remarkably effective in improve the reflow characteristics. The microstructure and imperfections in the Cu films before and after high-temperature high-pressure annealing were investigated by secondary ion micrographs and positron annihilation spectroscopy. The results imply that the embedding or deformation mechanism is different for the Cu-Sb alloy films compared to the Cu-Dy alloy films. We consider that the former is embedded by softening or deformation of the Cu matrix, which has a polycrystalline structure, and the latter is embedded by grain boundary sliding.

  8. Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: their impact on SiGe light emission

    Lockwood, David; Wu, Xiaohua; Baribeau, Jean-Marc; Mala, Selina; Wang, Xialou; Tsybeskov, Leonid

    2016-03-01

    Fast optical interconnects together with an associated light emitter that are both compatible with conventional Si-based complementary metal-oxide- semiconductor (CMOS) integrated circuit technology is an unavoidable requirement for the next-generation microprocessors and computers. Self-assembled Si/Si1-xGex nanostructures, which can emit light at wavelengths within the important optical communication wavelength range of 1.3 - 1.55 μm, are already compatible with standard CMOS practices. However, the expected long carrier radiative lifetimes observed to date in Si and Si/Si1-xGex nanostructures have prevented the attainment of efficient light-emitting devices including the desired lasers. Thus, the engineering of Si/Si1-xGex heterostructures having a controlled composition and sharp interfaces is crucial for producing the requisite fast and efficient photoluminescence (PL) at energies in the range 0.8-0.9 eV. In this paper we assess how the nature of the interfaces between SiGe nanostructures and Si in heterostructures strongly affects carrier mobility and recombination for physical confinement in three dimensions (corresponding to the case of quantum dots), two dimensions (corresponding to quantum wires), and one dimension (corresponding to quantum wells). The interface sharpness is influenced by many factors such as growth conditions, strain, and thermal processing, which in practice can make it difficult to attain the ideal structures required. This is certainly the case for nanostructure confinement in one dimension. However, we demonstrate that axial Si/Ge nanowire (NW) heterojunctions (HJs) with a Si/Ge NW diameter in the range 50 - 120 nm produce a clear PL signal associated with band-to-band electron-hole recombination at the NW HJ that is attributed to a specific interfacial SiGe alloy composition. For three-dimensional confinement, the experiments outlined here show that two quite different Si1-xGex nanostructures incorporated into a Si0.6Ge0.4 wavy

  9. Protective Sliding Carbon-Based Nanolayers Prepared by Argon or Nitrogen Ion-Beam Assisted Deposition on Ti6Al4V Alloy

    Petr Vlcak

    2016-01-01

    Full Text Available The microstructure and the surface properties of samples coated by carbon-based nanolayer were investigated in an effort to increase the surface hardness and reduce the coefficient of friction of the Ti6Al4V alloy. Protective carbon-based nanolayers were fabricated by argon or nitrogen ion-beam assisted deposition at ion energy of 700 eV on Ti6Al4V substrates. The Raman spectra indicated that nanolayers had a diamond-like carbon character with sp2 rich bonds. The TiC and TiN compounds formed in the surface area were detected by X-ray diffraction. Nanoscratch tests showed increased adhesion of a carbon-based nanolayer deposited with ion assistance in comparison with a carbon nanolayer deposited without ion assistance. The results showed that argon ion assistance leads to greater nanohardness than a sample coated by a carbon-based nanolayer with nitrogen ion assistance. A more than twofold increase in nanohardness and a more than fivefold decrease in the coefficient of friction were obtained for samples coated by a carbon-based nanolayer with ion assistance, in comparison with the reference sample.

  10. Effect of Welding Speed on Microstructure and Mechanical Properties due to The Deposition of Reinforcements on Friction Stir Welded Dissimilar Aluminium Alloys

    Baridula Ravinder Reddy

    2017-01-01

    Full Text Available The strength of the welded joint obtained by solid state stir welding process was found to be improved as compared to fusion welding process. The deposition of reinforcements during friction stir welding process can further enhance the strength of the welded joint by locking the movement of grain boundaries. In the present study, the aluminium alloys AA2024 and AA7075 were welded effectively by depositing the multi-walled carbon nanotubes in to the stir zone. The mechanical properties and microstructures were studied by varying the traverse speed at constant rotational speed. The results show that rotating tool pin stirring action and heat input play an important role in controlling the grain size. The carbon nanotubes were found to be distributed uniformly at a welding speed (traverse speed of 80mm/min. This enhanced the mechanical properties of the welded joint. The microstructure and Electron dispersive X-ray analysis (EDX studies indicate that the deposition of carbon nanotubes in the stir zone was influenced by the traverse speed.

  11. Depth profile of strain and composition in Si/Ge dot multilayers by microscopic phonon Raman spectroscopy

    Tan, P.H.; Bougeard, D.; Abstreiter, G.; Brunner, K.

    2005-01-01

    We characterized strain and Ge content depending on depth in a self-assembled Si/Ge dot multilayer by scanning a microscopic Raman probe at a (110) cleavage plane. The multilayer structure was deposited by molecular-beam epitaxy on a (001) Si substrate and consisted of 80 periods, each of them composed by 25 nm Si spacers and 8 monolayer Ge forming laterally and vertically uncorrelated islands with a height of 2 nm and a lateral diameter of about 20 nm. An average biaxial strain of -3.5% within the core regions of islands is determined from the splitting of longitudinal and transversal optical Ge-Ge phonon modes observed in polarized Raman measurements. The absolute mode frequencies further enable analysis of a Ge content of 0.82. The analyzed strain and composition of islands are nearly independent from depths below the sample surface. This indicates well-controlled deposition parameters and negligible intermixing during deposition of subsequent layers. These Raman results are in agreement with x-ray diffraction data. Small, local Raman frequency shifts were observed and discussed with respect to partial elastic strain relaxation of the multilayer stack after cleavage, undefined Raman-scattering geometries at the sample edge, and local heating by the laser probe

  12. Influence of oxide and alloy formation on the Electrochemistry of Ti deposition from the NaCl-KCl-NaF-K-2 TiF6 melt reduced by metallic Ti

    Barner, Jens H. Von; Precht Noyé, Pernille; Barhoun, A

    2005-01-01

    The redox reactions in KCl-NaCl-NaF-K2TiF6 melts reduced by titanium metal have been studied by cyclic voltammetry and chronopotentiommetry. At platinum and nickel electrodes waves due to alloy formation were seen preceding the Ti(III) --> Ti metal deposition wave. The presence of oxide species...

  13. Effect of Heat Treatment on Microstructure and Mechanical Properties of Inconel 625 Alloy Fabricated by Pulsed Plasma Arc Deposition

    Xu, Fujia; Lv, Yaohui; Liu, Yuxin; Xu, Binshi; He, Peng

    Pulsed plasma arc deposition (PPAD) was successfully used to fabricate the Ni-based superalloy Inconel 625 samples. The effects of three heat treatment technologies on microstructure and mechanical properties of the as-deposited material were investigated. It was found that the as-deposited structure exhibited homogenous cellular dendrite structure, which grew epitaxially along the deposition direction. Moreover, some intermetallic phases including Laves phase and MC carbides were precipitated in the interdendritic region as a result of Nb segregation. Compared with the as-deposited microstructure, the direct aged (DA) microstructure changed little except the precipitation of hardening phases γ' and γ" (Ni3Nb), which enhanced the hardness and tensile strength. But the plastic property was inferior due to the existence of brittle Laves phase. After solution and aging heat treatment (STA), a large amount of Laves particles in the interdendritic regions were dissolved, resulting in the reduction of Nb segregation and the precipitation of needle-like δ (Ni3Nb) in the interdendritic regions and grain boundaries. The hardness and tensile strength were improved without sacrificing the ductility. By homogenization and STA heat treatment (HSTA), Laves particles were dissolved into the matrix completely and resulted in recrystallized large grains with bands of annealing twins. The primary MC particles and remaining phase still appeared in the matrix and grain boundaries. Compared with the as-deposited sample, the mechanical properties decreased severely as a result of the grain growth coarsening. The failure modes of all the tensile specimens were analyzed with fractography.

  14. Precipitation and strengthening phenomena in Al-Si-Ge and Al-Cu-Si-Ge alloys

    Mitlin, D.; Morris, J.W.; Dahmen, U.; Radmilovic, V.

    2000-01-01

    The objective of this work was to determine whether Al rich Al-Si-Ge and 2000 type Al-Cu-Si-Ge alloys have sufficient hardness to be useful for structural applications. It is shown that in Al-Si-Ge it is not possible to achieve satisfactory hardness through a conventional heat treatment. This result is explained in terms of sluggish precipitation of the diamond-cubic Si-Ge phase coupled with particle coarsening. However, Al-Cu-Si-Ge displayed a uniquely fast aging response, a high peak hardness and a good stability during prolonged aging. The high hardness of the Cu containing alloy is due to the dense and uniform distribution of fine θ' precipitates (metastable Al 2 Cu) which are heterogeneously nucleated on the Si-Ge particles. High resolution TEM demonstrated that in both alloys all the Si-Ge precipitates start out, and remain multiply twinned throughout the aging treatment. Since the twinned section of the precipitate does not maintain a low index interface with the matrix, the Si-Ge precipitates are equiaxed in morphology. Copyright (2000) AD-TECH - International Foundation for the Advancement of Technology Ltd

  15. The n-MAO/EPD bio-ceramic composite coating fabricated on ZK60 magnesium alloy using combined micro-arc oxidation with electrophoretic deposition

    Xiong, Ying, E-mail: yxiong@zjut.edu.cn [College of Mechanical Engineering, Zhejiang University of Technology, Hangzhou 310032 (China); Lu, Chao [College of Mechanical Engineering, Zhejiang University of Technology, Hangzhou 310032 (China); Wang, Chao; Song, Renguo [School of Materials Science and Engineering, Changzhou University, Changzhou 213164 (China); Jiangsu Key Laboratory of Materials Surface Science and Technology, Changzhou University, Changzhou 213164 (China)

    2014-12-15

    Highlights: • Adding CeO{sub 2}/ZrO{sub 2} nano-particles to modify the properties of n-MAO coating. • A bio-ceramic n-MAO/EPD composite coating was prepared by two-step methods. • The n-MAO/EPD composite coating with HA has a favorable anti-corrosion effect. - Abstract: A bio-ceramic composite coating was fabricated on ZK60 magnesium (Mg) alloy using combined micro-arc oxidation (MAO) with electrophoretic deposition (EPD) technique. The MAO coating as the basal layer was produced in alkaline electrolyte with (n-MAO coating) and without (MAO coating) the addition of CeO{sub 2} and ZrO{sub 2} nano-particles, respectively. A hydroxyapatite (HA) coating as the covering layer was deposited on the n-MAO coating to improve the biological properties of the coating (n-MAO/EPD composite coating). The morphology and phase composition of three treated coatings were investigated by scanning electron microscope (SEM) and X-ray diffraction (XRD). The corrosion resistance of these coatings was evaluated with potentiodynamic polarization tests and immersion tests in simulated body fluid (SBF) at 36.5 ± 0.5 °C. The XRD spectra showed that the CeO{sub 2} and ZrO{sub 2} peaks can be collected in the n-MAO coating, and HA particles exists in the n-MAO/EPD composite coating. The results of corrosion tests indicated that the n-MAO/EPD composite coating owned increased bioactivity and long-term protective ability compared with the MAO coating and the n-MAO coating. Thus Mg alloy coated with the n-MAO/EPD composite coating should be more suited as biodegradable bone implants.

  16. Si/Ge intermixing during Ge Stranski–Krastanov growth

    Alain Portavoce

    2014-12-01

    Full Text Available The Stranski–Krastanov growth of Ge islands on Si(001 has been widely studied. The morphology changes of Ge islands during growth, from nucleation to hut/island formation and growth, followed by hut-to-dome island transformation and dislocation nucleation of domes, have been well described, even at the atomic scale, using techniques such as scanning tunneling microscopy and transmission electron microscopy. Although it is known that these islands do not consist of pure Ge (due to Si/Ge intermixing, the composition of the Ge islands is not precisely known. In the present work, atom probe tomography was used to study the composition of buried dome islands at the atomic scale, in the three-dimensional space. The core of the island was shown to contain about 55 atom % Ge, while the Ge composition surrounding this core decreases rapidly in all directions in the islands to reach a Ge concentration of about 15 atom %. The Ge distribution in the islands follows a cylindrical symmetry and Ge segregation is observed only in the {113} facets of the islands. The Ge composition of the wetting layer is not homogeneous, varying from 5 to 30 atom %.

  17. Effect of Laser Power and Gas Flow Rate on Properties of Directed Energy Deposition of Titanium Alloy

    Mahamood, Rasheedat M.

    2018-03-01

    Laser metal deposition (LMD) process belongs to the directed energy deposition class of additive manufacturing processes. It is an important manufacturing technology with lots of potentials especially for the automobile and aerospace industries. The laser metal deposition process is fairly new, and the process is very sensitive to the processing parameters. There is a high level of interactions among these process parameters. The surface finish of part produced using the laser metal deposition process is dependent on the processing parameters. Also, the economy of the LMD process depends largely on steps taken to eliminate or reduce the need for secondary finishing operations. In this study, the influence of laser power and gas flow rate on the microstructure, microhardness and surface finish produced during the laser metal deposition of Ti6Al4V was investigated. The laser power was varied between 1.8 kW and 3.0 kW, while the gas flow rate was varied between 2 l/min and 4 l/min. The microstructure was studied under an optical microscope, the microhardness was studied using a Metkon microhardness indenter, while the surface roughness was studied using a Jenoptik stylus surface analyzer. The results showed that better surface finish was produced at a laser power of 3.0 kW and a gas flow rate of 4 l/min.

  18. Interface bond relaxation on the thermal conductivity of Si/Ge core-shell nanowires

    Chen, Weifeng; He, Yan; Ouyang, Gang, E-mail: gangouy@hunnu.edu.cn [Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications(SICQEA), Hunan Normal University, Changsha 410081 (China); Sun, Changqing [School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

    2016-01-15

    The thermal conductivity of Si/Ge core-shell nanowires (CSNWs) is investigated on the basis of atomic-bond-relaxation consideration and continuum mechanics. An analytical model is developed to clarify the interface bond relaxation of Si/Ge CSNWs. It is found that the thermal conductivity of Si core can be modulated through covering with Ge epitaxial layers. The change of thermal conductivity in Si/Ge CSNWs should be attributed to the surface relaxation and interface mismatch between inner Si nanowire and outer Ge epitaxial layer. Our results are in well agreement with the experimental measurements and simulations, suggesting that the presented method provides a fundamental insight of the thermal conductivity of CSNWs from the atomistic origin.

  19. The effect of fluorine in low thermal budget polysilicon emitters for SiGe heterojunction bipolar transistors

    Schiz, F.J.W.

    1999-03-01

    results are explained by the different evolution of defects in as-deposited α-Si and p-Si. The application of fluorine in low thermal budget polysilicon emitters is demonstrated ill a novel self-aligned SiGe heterojunction bipolar transistor concept which is implemented using selective and non-selective epitaxy. The process has the advantage of layer growth ill a single epitaxy step, no growth interfaces in the depletion regions, and oxide isolation as all intrinsic part of the device structure. The device electrical results demonstrate the feasibility of the transistor concept. A detailed analysis of leakage currents is performed and a correlation made with cross-section TEM micrographs. It is shown that E/C leakage is due to punch through at the perimeter of the transistor where the SiGe base is thinner. E/B is explained by the penetration of the E/B depletion region into the extrinsic at the perimeter of the emitter. By directing the extrinsic base implant into single crystal material at the perimeter of the base, both leakage mechanisms can be avoided. (author)

  20. Deposition and cyclic oxidation behavior of a protective (Mo,W)(Si,Ge) 2 coating on Nb-base alloys

    Mueller, A.; Wang, G.

    1992-01-01

    A multicomponent diffusion coating has been developed to protect Nb-base alloys from high-temperature environmental attach. A solid solution of molybdenum and tungsten disilicide (Mo, W)Si 2 , constituted the primary coating layer which supported a slow-growing protective silica scale in service. Germanium additions were made during the coating process to improve the cyclic oxidation resistance by increasing the thermal expansion coefficient of the vitreous silica film formed and to avoid pesting by decreasing the viscosity of the protective film. In this paper, the development of the halide-activated pack cementation coating process to produce this (Mo,W)(Si,Ge) 2 coating on Nb-base alloys is described. The results of cyclic oxidation for coupons coated under different conditions in air at 1370 degrees C are presented. Many coupons have successfully passed 200 1 h cyclic oxidation tests at 1370 degrees C with weight-gain values in the range of 1.2 to 1.6 mg/cm 2

  1. Effect of high temperature annealing on the thermoelectric properties of GaP doped SiGe

    Vandersande, Jan W.; Wood, Charles; Draper, Susan

    1987-01-01

    Silicon-germanium alloys doped with GaP are used for thermoelectric energy conversion in the temperature range 300-1000 C. The conversion efficiency depends on Z = S-squared/rho lambda, a material's parameter (the figure of merit), where S is the Seebeck coefficient, rho is the electrical resistivity and lambda is the thermal conductivity. The annealing of several samples in the temperature range of 1100-1300 C resulted in the power factor P (= S-squared/rho) increasing with increased annealing temperature. This increase in P was due to a decrease in rho which was not completely offset by a drop in S-squared suggesting that other changes besides that in the carrier concentration took place. SEM and EDX analysis of the samples indicated the formation of a Ga-P-Ge rich phase as a result of the annealing. It is speculated that this phase is associated with the improved properties. Several reasons which could account for the improvement in the power factor of annealed GaP doped SiGe are given.

  2. Transformation of point defects under annealing of neutron-irradiated Si and Si:Ge

    Pomozov, Yu.V.; Khirunenko, L.I.; Shakhovtsev, V.I.; Yashnik, V.I.

    1990-01-01

    Transformation of point radiation defects under isochronous annealing of neurton-irradaited Si and Si:Ge is studied. It is determined, that occurence of several new centers which produce A-centre range absorption bands is observed at annealing within 423-493 K temperature range. It is shown that vacancy and oxygen are included in the centers composition. It is found that VO centre transformation into VO 2 at annealing occurs via intermediate stage in contrast to that occuring in electron-irradiated crystals via VO direct diffusion to interstitial oxygen. Transformation of centers under Si ansd Si:Ge annealing occurs similarly

  3. Electrical characterisation of SiGe heterojunction bipolar transistors and Si pseudo-HBTS

    De Barros, O.; Le Tron, B.; Woods, R. C.; Giroult-Matlakowski, G.; Vincent, G.; Brémond, G.

    1996-08-01

    This paper reports an electrical characterisation of the emitter-base junction of Si pseudo-HBTs and SiGe HBTs fabricated in a CMOS compatible single polysilicon self-aligned process. From the reverse characteristics it appears that the definition of the emitter-base junction by plasma etching induces peripheral defects that increase the base current of the transistors. Deep level transient spectroscopy measurements show a deep level in the case of SiGe base, whose spatial origin is not fully determinate up to now.

  4. Surface Morphology Transformation Under High-Temperature Annealing of Ge Layers Deposited on Si(100).

    Shklyaev, A A; Latyshev, A V

    2016-12-01

    We study the surface morphology and chemical composition of SiGe layers after their formation under high-temperature annealing at 800-1100 °C of 30-150 nm Ge layers deposited on Si(100) at 400-500 °C. It is found that the annealing leads to the appearance of the SiGe layers of two types, i.e., porous and continuous. The continuous layers have a smoothened surface morphology and a high concentration of threading dislocations. The porous and continuous layers can coexist. Their formation conditions and the ratio between their areas on the surface depend on the thickness of deposited Ge layers, as well as on the temperature and the annealing time. The data obtained suggest that the porous SiGe layers are formed due to melting of the strained Ge layers and their solidification in the conditions of SiGe dewetting on Si. The porous and dislocation-rich SiGe layers may have properties interesting for applications.

  5. Effect of chemical treatment on surface characteristics of sputter deposited Ti-rich NiTi shape memory alloy thin-films

    Sharma, S.K.; Mohan, S.

    2014-01-01

    Graphical abstract: FTIR spectra recorded for sputter deposited (a) untreated and (b) chemically treated NiTi SMA thin-films. - Highlights: • The effect of chemical treatment on surface properties of NiTi films demonstrated. • Chemically treated films offer strong ability to form protective TiO 2 layer. • TiO 2 layer formation offer great application prospects in biomedical fields. - Abstract: NiTi thin-films were deposited by DC magnetron sputtering from single alloy target (Ni/Ti:45/55 at.%). The rate of deposition and thickness of sputter deposited films were maintained to ∼35 nm min −1 and 4 μm respectively. A set of sputter deposited NiTi films were selected for specific chemical treatment with the solution comprising of de-ionized water, HF and HNO 3 respectively. The influence of chemical treatment on surface characteristics of NiTi films before and after chemical treatment was investigated for their structure, micro-structure and composition using different analytical techniques. Prior to chemical treatment, the composition of NiTi films using energy dispersive X-ray dispersive spectroscopy (EDS), were found to be 51.8 atomic percent of Ti and 48.2 atomic percent of Ni. The structure and morphology of these films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD investigations, demonstrated the presence of dominant Austenite (1 1 0) phase along with Martensite phase, for untreated NiTi films whereas some additional diffraction peaks viz. (1 0 0), (1 0 1), and (2 0 0) corresponding to Rutile and Anatase phase of Titanium dioxide (TiO 2 ) along with parent Austenite (1 1 0) phase were observed for chemically treated NiTi films. FTIR studies, it can be concluded that chemically treated films have higher tendency to form metal oxide/hydroxide than the untreated NiTi films. XPS investigations, demonstrated the presence of Ni-free surface and formation of a protective metal oxide (TiO 2 ) layer on the surface of

  6. Weld Bead Geometry of Ni-Based Alloy Deposited by PTA Process for Pipe Conduction of Shale Gas

    Echavarria-Figueroa, C.; García-Vázquez, F.; Ruiz-Mondragón, J.; Hernández-García, H. M.; González-González, D.; Vargas, A.

    The transportation of shale gas has the problem that the piping used for the extraction does not resist the erosion generated by the amount of solids causing cracks over the surface and it is necessary to extend the life of the pipelines. Plasma transferred arc (PTA) welded coatings are used to improve the surface properties of mechanical parts. Therefore, in this paper is studied the use of Ni-based filler metal as weld bead deposits on A36 steel substrates by PTA. In order to determine the suitable conditions to ensure coating quality on the substrate a design of experiments (DOE) was determined. Welding current, feed rate, and travel speed were used as input parameters and the dilution percentage as the response variable. The composition and properties of hardfacing or overlay deposited are strongly influenced by the dilution obtained. Control of dilution is important, where typically low dilution is desirable. When the dilution is low, the final deposit composition will be closer to that of the filler metal, and the wear and corrosion resistance of the hardfacing will also be maintained. To evaluate the features on the weld beads/substrate interface a microstructural characterization was performed by using scanning electron microscopy and to evaluate the mechanical properties was carried out hardness test.

  7. A dilute Cu(Ni) alloy for synthesis of large-area Bernal stacked bilayer graphene using atmospheric pressure chemical vapour deposition

    Madito, M. J.; Bello, A.; Dangbegnon, J. K.; Momodu, D. Y.; Masikhwa, T. M.; Barzegar, F.; Manyala, N., E-mail: ncholu.manyala@up.ac.za [Department of Physics, Institute of Applied Materials, SARCHI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa); Oliphant, C. J.; Jordaan, W. A. [National Metrology Institute of South Africa, Private Bag X34, Lynwood Ridge, Pretoria 0040 (South Africa); Fabiane, M. [Department of Physics, Institute of Applied Materials, SARCHI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa); Department of Physics, National University of Lesotho, P.O. Roma 180 (Lesotho)

    2016-01-07

    A bilayer graphene film obtained on copper (Cu) foil is known to have a significant fraction of non-Bernal (AB) stacking and on copper/nickel (Cu/Ni) thin films is known to grow over a large-area with AB stacking. In this study, annealed Cu foils for graphene growth were doped with small concentrations of Ni to obtain dilute Cu(Ni) alloys in which the hydrocarbon decomposition rate of Cu will be enhanced by Ni during synthesis of large-area AB-stacked bilayer graphene using atmospheric pressure chemical vapour deposition. The Ni doped concentration and the Ni homogeneous distribution in Cu foil were confirmed with inductively coupled plasma optical emission spectrometry and proton-induced X-ray emission. An electron backscatter diffraction map showed that Cu foils have a single (001) surface orientation which leads to a uniform growth rate on Cu surface in early stages of graphene growth and also leads to a uniform Ni surface concentration distribution through segregation kinetics. The increase in Ni surface concentration in foils was investigated with time-of-flight secondary ion mass spectrometry. The quality of graphene, the number of graphene layers, and the layers stacking order in synthesized bilayer graphene films were confirmed by Raman and electron diffraction measurements. A four point probe station was used to measure the sheet resistance of graphene films. As compared to Cu foil, the prepared dilute Cu(Ni) alloy demonstrated the good capability of growing large-area AB-stacked bilayer graphene film by increasing Ni content in Cu surface layer.

  8. Total dose hardness of a commercial SiGe BiCMOS technology

    Van Vonno, N.; Lucas, R.; Thornberry, D.

    1999-01-01

    Over the past decade SiGe HBT technology has progress from the laboratory to actual commercial applications. When integrated into a BiMOS process, this technology has applications in low-cost space systems. In this paper, we report results of total dose testing of a SiGe/CMOS process accessible through a commercial foundry. (authors)

  9. An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun

    Michaelsen, Rasmus Schandorph; Johansen, Tom Keinicke; Tamborg, Kjeld M.

    2017-01-01

    In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can...

  10. De-embedding and Modelling of pnp SiGe HBTs

    Hadziabdic, Dzenan; Jiang, Chenhui; Johansen, Tom Keinicke

    2007-01-01

    In this work we present a direct parameter extraction procedure for SiGe pnp heterojunction bipolar transistor (HBT) large-signal and small-signal models. Test structure parasitics are removed from the measured small-signal parameters using an open-short de-embedding technique, improved to accoun...

  11. A Passive X-Band Double Balanced Mixer Utilizing Diode Connected SiGe HBTs

    Michaelsen, Rasmus Schandorph; Johansen, Tom Keinicke; Tamborg, Kjeld

    2013-01-01

    In this paper, a passive double balanced mixer in SiGe HBT technology is presented. Due to lack of suitable passive mixing elements in the technology, the mixing elements are formed by diode connected HBTs. The mixer is optimized for use in doppler radars and is highly linear with 1 dB compressio...

  12. SiGe Based Low Temperature Electronics for Lunar Surface Applications

    Mojarradi, Mohammad M.; Kolawa, Elizabeth; Blalock, Benjamin; Cressler, John

    2012-01-01

    The temperature at the permanently shadowed regions of the moon's surface is approximately -240 C. Other areas of the lunar surface experience temperatures that vary between 120 C and -180 C during the day and night respectively. To protect against the large temperature variations of the moon surface, traditional electronics used in lunar robotics systems are placed inside a thermally controlled housing which is bulky, consumes power and adds complexity to the integration and test. SiGe Based electronics have the capability to operate over wide temperature range like that of the lunar surface. Deploying low temperature SiGe electronics in a lander platform can minimize the need for the central thermal protection system and enable the development of a new generation of landers and mobility platforms with highly efficient distributed architecture. For the past five years a team consisting of NASA, university and industry researchers has been examining the low temperature and wide temperature characteristic of SiGe based transistors for developing electronics for wide temperature needs of NASA environments such as the Moon, Titan, Mars and Europa. This presentation reports on the status of the development of wide temperature SiGe based electronics for the landers and lunar surface mobility systems.

  13. Properties of plasma assisted chemical vapor deposited coatings of titanium boride on Ti--6Al--4V alloy substrates

    Otter, F.A.; Amisola, G.B.; Roman, W.C.; Hay, S.O.

    1992-01-01

    Coatings prepared in a radio-frequency-plasma (plasma assisted chemical vapor deposition) reactor employing in situ laser diagnostics have been tested and characterized. Detailed characterization studies are important to relate gas phase laser diagnostic studies and concurrent heterogeneous modeling efforts to coating characteristics. Establishing how deposition conditions are correlated with coating properties is expected to provide needed methodology for scale up of applications in the hard face protective coating area. After a brief discussion of preparation conditions and mechanical test results, we present results of chemical and physical measurements on these coatings. Measurement techniques include x-ray diffraction, Dektak surface roughness, scanning tunneling microscopy, scanning electron microscopy, and SEI, Auger electron spectroscopy, x-ray photoelectron spectroscopy, and Rutherford backscattering spectroscopy. The coatings (∼20 μm thick) are very hard (40 GPa at depths over 100 nm), adherent (60 N on scratch test), and sand erosion resistant (>40x as durable as Ti-6Al-4V). They are highly oriented with the c axis (hexagonal-close-packed) normal to the coating surface, rough (∼1 μm), and off-stoichiometry (TiB 2.2 )

  14. Heat-Treated TiO2 Plasma Spray Deposition for Bioactivity Improvement in Ti-6Al-4V Alloy

    Kumari, Renu; Majumdar, Jyotsna Dutta

    2017-12-01

    In the present study, titanium di-oxide (TiO2) coating has been developed on Ti-6Al-4V substrate by plasma spray deposition. Followed by plasma spraying, heat treatment of the sprayed sample has been carried out by isothermally holding it at 823 K (550 °C) for 2 h. Microstructural analysis shows the presence of porosity and unmelted particles on the as-sprayed surface, the area fraction of which reduces after heat treatment. X-ray diffraction analysis shows the phase transformation from anatase (in precursor powder) to rutile (in as-sprayed coating and the same after heat treatment). There is an improvement in nano-hardness, "Young's modulus" and wear resistance in plasma-sprayed TiO2 coating (as-sprayed as well as post-heat-treated condition) as compared to as-received Ti-6Al-4V, though post-heat treatment offers a superior hardness, "young's modulus" and wear resistance as compared to as-sprayed coating. The corrosion behavior in "hank's solution" shows decrease in corrosion resistance after plasma spraying and post-heat treatment as compared to as-received substrate. A significant decrease in contact angle and improvement in bioactivity (in terms of apatite deposition) were observed in TiO2-coated surface as compared to as-received Ti-6Al-4V.

  15. Supersonic Plasma Spray Deposition of CoNiCrAlY Coatings on Ti-6Al-4V Alloy

    Caliari, F. R.; Miranda, F. S.; Reis, D. A. P.; Essiptchouk, A. M.; Filho, G. P.

    2017-06-01

    Plasma spray is a versatile technology used for production of environmental and thermal barrier coatings, mainly in the aerospace, gas turbine, and automotive industries, with potential application in the renewable energy industry. New plasma spray technologies have been developed recently to produce high-quality coatings as an alternative to the costly low-pressure plasma-spray process. In this work, we studied the properties of as-sprayed CoNiCrAlY coatings deposited on Ti-6Al-4V substrate with smooth surface ( R a = 0.8 μm) by means of a plasma torch operating in supersonic regime at atmospheric pressure. The CoNiCrAlY coatings were evaluated in terms of their surface roughness, microstructure, instrumented indentation, and phase content. Static and dynamic depositions were investigated to examine their effect on coating characteristics. Results show that the substrate surface velocity has a major influence on the coating properties. The sprayed CoNiCrAlY coatings exhibit low roughness ( R a of 5.7 μm), low porosity (0.8%), excellent mechanical properties ( H it = 6.1 GPa, E it = 155 GPa), and elevated interface toughness (2.4 MPa m1/2).

  16. Electroplating on titanium alloy

    Lowery, J. R.

    1971-01-01

    Activation process forms adherent electrodeposits of copper, nickel, and chromium on titanium alloy. Good adhesion of electroplated deposits is obtained by using acetic-hydrofluoric acid anodic activation process.

  17. Site-Selective Carving and Co-Deposition: Transformation of Ag Nanocubes into Concave Nanocrystals Encased by Au-Ag Alloy Frames.

    Ahn, Jaewan; Wang, Daniel; Ding, Yong; Zhang, Jiawei; Qin, Dong

    2018-01-23

    We report a facile synthesis of Ag nanocubes with concave side faces and Au-Ag alloy frames, namely Ag@Au-Ag concave nanocrystals, by titrating HAuCl 4 solution into an aqueous mixture of Ag nanocubes, ascorbic acid (H 2 Asc), NaOH, and cetyltrimethylammonium chloride (CTAC) at an initial pH of 11.6 under ambient conditions. Different from all previous studies involving poly(vinylpyrrolidine), the use of CTAC at a sufficiently high concentration plays an essential role in carving away Ag atoms from the side faces through galvanic replacement. Concurrent co-deposition of Au and Ag atoms via chemical reduction at orthogonal sites on the surface of Ag nanocubes leads to the generation of Ag@Au-Ag concave nanocrystals with well-defined and controllable structures. Specifically, in the presence of CTAC-derived Cl - ions, the titrated HAuCl 4 is maintained in the AuCl 4 - species, enabling its galvanic replacement with the Ag atoms located on the side faces of nanocubes. The released Ag + ions can be retained in the soluble form of AgCl 2 - by complexing with the Cl - ions. Both the AuCl 4 - and AgCl 2 - in the solution are then reduced by ascorbate monoanion, a product of the neutralization reaction between H 2 Asc and NaOH, to Au and Ag atoms for their preferential co-deposition onto the edges and corners of the Ag nanocubes. Compared with Ag nanocubes, the Ag@Au-Ag concave nanocrystals exhibit much stronger SERS activity at an excitation of 785 nm, making it feasible to monitor the Au-catalyzed reduction of 4-nitrothiophenol by NaBH 4 in situ. When the Ag cores are removed, the concave nanocrystals evolve into Au-Ag nanoframes with controllable ridge thicknesses.

  18. SiGe Integrated Circuit Developments for SQUID/TES Readout

    Prêle, D.; Voisin, F.; Beillimaz, C.; Chen, S.; Piat, M.; Goldwurm, A.; Laurent, P.

    2018-03-01

    SiGe integrated circuits dedicated to the readout of superconducting bolometer arrays for astrophysics have been developed since more than 10 years at APC. Whether for Cosmic Microwave Background (CMB) observations with the QUBIC ground-based experiment (Aumont et al. in astro-ph.IM, 2016. arXiv:1609.04372) or for the Hot and Energetic Universe science theme with the X-IFU instrument on-board of the ATHENA space mission (Barret et al. in SPIE 9905, space telescopes & instrumentation 2016: UV to γ Ray, 2016. https://doi.org/10.1117/12.2232432), several kinds of Transition Edge Sensor (TES) (Irwin and Hilton, in ENSS (ed) Cryogenic particle detection, Springer, Berlin, 2005) arrays have been investigated. To readout such superconducting detector arrays, we use time or frequency domain multiplexers (TDM, FDM) (Prêle in JINST 10:C08015, 2016. https://doi.org/10.1088/1748-0221/10/08/C08015) with Superconducting QUantum Interference Devices (SQUID). In addition to the SQUID devices, low-noise biasing and amplification are needed. These last functions can be obtained by using BiCMOS SiGe technology in an Application Specific Integrated Circuit (ASIC). ASIC technology allows integration of highly optimised circuits specifically designed for a unique application. Moreover, we could reach very low-noise and wide band amplification using SiGe bipolar transistor either at room or cryogenic temperatures (Cressler in J Phys IV 04(C6):C6-101, 1994. https://doi.org/10.1051/jp4:1994616). This paper discusses the use of SiGe integrated circuits for SQUID/TES readout and gives an update of the last developments dedicated to the QUBIC telescope and to the X-IFU instrument. Both ASIC called SQmux128 and AwaXe are described showing the interest of such SiGe technology for SQUID multiplexer controls.

  19. Effect of atomic layer deposited Al2O3:ZnO alloys on thin-film silicon photovoltaic devices

    Abdul Hadi, Sabina; Dushaq, Ghada; Nayfeh, Ammar

    2017-12-01

    In this work, we present the effects of the Al2O3:ZnO ratio on the optical and electrical properties of aluminum doped ZnO (AZO) layers deposited by atomic layer deposition, along with AZO application as the anti-reflective coating (ARC) layer and in heterojunction configurations. Here, we report complex refractive indices for AZO layers with different numbers of aluminum atomic cycles (ZnO:Al2O3 = 1:0, 39:1, 19:1, and 9:1) and we confirm their validity by fitting models to experimental data. Furthermore, the most conductive layer (ZnO:Al2O3 = 19:1, conductivity ˜4.6 mΩ cm) is used to fabricate AZO/n+/p-Si thin film solar cells and AZO/p-Si heterojunction devices. The impact of the AZO layer on the photovoltaic properties of these devices is studied by different characterization techniques, resulting in the extraction of recombination and energy band parameters related to the AZO layer. Our results confirm that AZO 19:1 can be used as a low cost and effective conductive ARC layer for solar cells. However, AZO/p-Si heterojunctions suffer from an insufficient depletion region width (˜100 nm) and recombination at the interface states, with an estimated potential barrier of ˜0.6-0.62 eV. The work function of AZO (ZnO:Al2O3 = 19:1) is estimated to be in the range between 4.36 and 4.57 eV. These material properties limit the use of AZO as an emitter in Si solar cells. However, the results imply that AZO based heterojunctions could have applications as low-cost photodetectors or photodiodes, operating under relatively low reverse bias.

  20. High-quality graphene grown on polycrystalline PtRh{sub 20} alloy foils by low pressure chemical vapor deposition and its electrical transport properties

    Yang, He; Shen, Chengmin, E-mail: cmshen@iphy.ac.cn; Tian, Yuan; Bao, Lihong; Chen, Peng; Yang, Rong; Yang, Tianzhong; Li, Junjie; Gu, Changzhi; Gao, Hong-Jun [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2016-02-08

    High-quality continuous uniform monolayer graphene was grown on polycrystalline PtRh{sub 20} alloy foils by low pressure chemical vapor deposition. The morphology of graphene was investigated by Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. Analysis results confirm that high quality single-layer graphene was fabricated on PtRh{sub 20} foil at 1050 °C using a lower flux of methane under low pressure. Graphene films were transferred onto the SiO{sub 2}/Si substrate by the bubbling transfer method. The mobility of a test field effect transistor made of the graphene grown on PtRh{sub 20} was measured and reckoned at room temperature, showing that the carrier mobility was about 4000 cm{sup 2} V{sup −1} s{sup −1}. The results indicate that desired quality of single-layer graphene grown on PtRh{sub 20} foils can be obtained by tuning reaction conditions.

  1. Photonic metasurface made of array of lens-like SiGe Mie resonators formed on (100) Si substrate via dewetting

    Poborchii, Vladimir; Shklyaev, Alexander; Bolotov, Leonid; Uchida, Noriyuki; Tada, Tetsuya; Utegulov, Zhandos N.

    2017-12-01

    Metasurfaces consisting of arrays of high-index Mie resonators concentrating/redirecting light are important for integrated optics, photodetectors, and solar cells. Herein, we report the optical properties of low-Ge-content SiGe lens-like Mie resonator island arrays fabricated via dewetting during Ge deposition on a Si(100) surface at approximately 900 °C. We observe enhancement of the Si interaction with light owing to the efficient island-induced light concentration in the submicron-depth Si layer, which is mediated by both near-field Mie resonance leaking into the substrate and far-field light focusing. Such metasurfaces can improve the Si photodetector and solar-cell performance.

  2. Amorphous-crystalline interface evolution during Solid Phase Epitaxy Regrowth of SiGe films amorphized by ion implantation

    D'Angelo, D.; Piro, A.M.; Mirabella, S.; Bongiorno, C.; Romano, L.; Terrasi, A.; Grimaldi, M.G.

    2007-01-01

    Transmission Electron Microscopy was combined with Time Resolved Reflectivity to study the amorphous-crystalline (a-c) interface evolution during Solid Phase Epitaxy Regrowth (SPER) of Si 0.83 Ge 0.17 films deposited on Si by Molecular Beam Epitaxy and amorphized with Ge + ion implantation. Starting from the Si/SiGe interface, a 20 nm thick layer regrows free of defects with the same SPER rate of pure Si. The remaining SiGe regrows with planar defects and dislocations, accompanied by a decrease of the SPER velocity. The sample was also studied after implantation with B or P. In these cases, the SPER rate raises following the doping concentration profile, but no difference in the defect-free layer thickness was observed compared to the un-implanted sample. On the other hand, B or P introduction reduces the a-c interface roughness, while B-P co-implantation produces roughness comparable to the un-implanted sample

  3. Effect of Ge atoms on crystal structure and optoelectronic properties of hydrogenated Si-Ge films

    Li, Tianwei; Zhang, Jianjun; Ma, Ying; Yu, Yunwu; Zhao, Ying

    2017-07-01

    Optoelectronic and structural properties of hydrogenated microcrystalline silicon-germanium (μc-Si1-xGex:H) alloys prepared by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) were investigated. When the Ge atoms were predominantly incorporated in amorphous matrix, the dark and photo-conductivity decreased due to the reduced crystalline volume fraction of the Si atoms (XSi-Si) and the increased Ge dangling bond density. The photosensitivity decreased monotonously with Ge incorporation under higher hydrogen dilution condition, which was attributed to the increase in both crystallization of Ge and the defect density.

  4. SigE Is a Chaperone for the Salmonella enterica Serovar Typhimurium Invasion Protein SigD

    Darwin, K. Heran; Robinson, Lloyd S.; Miller, Virginia L.

    2001-01-01

    SigD is translocated into eucaryotic cells by a type III secretion system. In this work, evidence that the putative chaperone SigE directly interacts with SigD is presented. A bacterial two-hybrid system demonstrated that SigE can interact with itself and SigD. In addition, SigD was specifically copurified with SigE-His6 on a nickel column.

  5. Structural, Dynamic, and Vibrational Properties during Heat Transfer in Si/Ge Superlattices: A Car-Parrinello Molecular Dynamics Study

    Ji, Pengfei; Zhang, Yuwen; Yang, Mo

    2016-01-01

    The structural, dynamic, and vibrational properties during the heat transfer process in Si/Ge superlattices, are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) ar...

  6. Fabrication of SGOI material by oxidation of an epitaxial SiGe layer on an SOI wafer with H ions implantation

    Cheng Xinli; Chen Zhijun; Wang Yongjin; Jin Bo; Zhang Feng; Zou Shichang

    2005-01-01

    SGOI materials were fabricated by thermal dry oxidation of epitaxial H-ion implanted SiGe layers on SOI wafers. The hydrogen implantation was found to delay the oxidation rate of SiGe layer and to decrease the loss of Ge atoms during oxidation. Further, the H implantation did not degrade the crystallinity of SiGe layer during fabrication of the SGOI

  7. Critical Role of a Single Position in the −35 Element for Promoter Recognition by Mycobacterium tuberculosis SigE and SigH▿

    Song, Taeksun; Song, Seung-Eun; Raman, Sahadevan; Anaya, Mauricio; Husson, Robert N.

    2008-01-01

    Mycobacterial SigE and SigH both initiate transcription from the sigB promoter, suggesting that they recognize similar sequences. Through mutational and primer extension analyses, we determined that SigE and SigH recognize nearly identical promoters, with differences at the 3′ end of the −35 element distinguishing between SigE- and SigH-dependent promoters.

  8. Narrow-gap physical vapour deposition synthesis of ultrathin SnS1-xSex (0 ≤ x ≤ 1) two-dimensional alloys with unique polarized Raman spectra and high (opto)electronic properties.

    Gao, Wei; Li, Yongtao; Guo, Jianhua; Ni, Muxun; Liao, Ming; Mo, Haojie; Li, Jingbo

    2018-05-10

    Here we report ultrathin SnS1-xSex alloyed nanosheets synthesized via a narrow-gap physical vapour deposition approach. The SnS1-xSex alloy presents a uniform quadrangle shape with a lateral size of 5-80 μm and a thickness of several nanometers. Clear orthorhombic symmetries and unique in-plane anisotropic properties of the 2D alloyed nanosheets were found with the help of X-ray diffraction, high resolution transmission electron microscopy and polarized Raman spectroscopy. Moreover, 2D alloyed field-effect transistors were fabricated, exhibiting a unipolar p-type semiconductor behavior. This study also provided a lesson that the thickness of the alloyed channels played the major role in the current on/off ratio, and the high ratio of 2.10 × 102 measured from a large ultrathin SnS1-xSex device was two orders of magnitude larger than that of previously reported SnS, SnSe nanosheet based transistors because of the capacitance shielding effect. Obviously enhanced Raman peaks were also found in the thinner nanosheets. Furthermore, the ultrathin SnS0.5Se0.5 based photodetector showed a highest responsivity of 1.69 A W-1 and a short response time of 40 ms under illumination of a 532 nm laser from 405 to 808 nm. Simultaneously, the corresponding highest external quantum efficiency of 392% and detectivity of 3.96 × 104 Jones were also achieved. Hopefully, the narrow-gap synthesis technique provides us with an improved strategy to obtain large ultrathin 2D nanosheets which may tend to grow into thicker ones for stronger interlayer van der Waals forces, and the enhanced physical and (opto)electrical performances in the obtained ultrathin SnS1-xSex alloyed nanosheets prove their great potential in the future applications for versatile devices.

  9. Nitride passivation of the interface between high-k dielectrics and SiGe

    Sardashti, Kasra [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, California 92093-0411 (United States); Hu, Kai-Ting [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States); Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, California 92093-0411 (United States); Tang, Kechao; McIntyre, Paul [Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States); Madisetti, Shailesh; Oktyabrsky, Serge [Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12222 (United States); Siddiqui, Shariq; Sahu, Bhagawan [TD Research, GLOBALFOUNDRIES US, Inc., Albany, New York 12203 (United States); Yoshida, Naomi; Kachian, Jessica; Dong, Lin [Applied Materials, Inc., Santa Clara, California 95054 (United States); Fruhberger, Bernd [California Institute for Telecommunications and Information Technology, University of California San Diego, La Jolla, California 92093-0436 (United States); Kummel, Andrew C., E-mail: akummel@ucsd.edu [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States)

    2016-01-04

    In-situ direct ammonia (NH{sub 3}) plasma nitridation has been used to passivate the Al{sub 2}O{sub 3}/SiGe interfaces with Si nitride and oxynitride. X-ray photoelectron spectroscopy of the buried Al{sub 2}O{sub 3}/SiGe interface shows that NH{sub 3} plasma pre-treatment should be performed at high temperatures (300 °C) to fully prevent Ge nitride and oxynitride formation at the interface and Ge out-diffusion into the oxide. C-V and I-V spectroscopy results show a lower density of interface traps and smaller gate leakage for samples with plasma nitridation at 300 °C.

  10. Integrated X-band FMCW front-end in SiGe BiCMOS

    Suijker, Erwin; de Boer, Lex; Visser, Guido; van Dijk, Raymond; Poschmann, Michael; van Vliet, Frank Edward

    2010-01-01

    An integrated X-band FMCW front-end is reported. The front-end unites the core functionality of an FMCW transmitter and receiver in a 0.25 μm SiGe BiCMOS process. The chip integrates a PLL for the carrier generation, and single-side band and image-reject mixers for up- and down-conversion of the

  11. Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs

    Pellish, Jonathan A.; Reed, Robert A.; McMorrow, Dale; Vizkelethy, Gyorgy; Ferlet-Cavrois, Veronique; Baggio, Jacques; Duhamel, Olivier; Moen, Kurt A.; Phillips, Stanley D.; Diestelhorst, Ryan M.; hide

    2009-01-01

    SiGe HBT heavy ion-induced current transients are measured using Sandia National Laboratories microbeam and high- and low-energy broadbeam sources at the Grand Accelerateur National d'Ions Lourds and the University of Jyvaskyla. The data were captured using a custom broadband IC package and real-time digital phosphor oscilloscopes with at least 16 GHz of analog bandwidth. These data provide detailed insight into the effects of ion strike location, range, and LET.

  12. SiGe derivatization by spontaneous reduction of aryl diazonium salts

    Girard, A.; Geneste, F.; Coulon, N.; Cardinaud, C.; Mohammed-Brahim, T.

    2013-10-01

    Germanium semiconductors have interesting properties for FET-based biosensor applications since they possess high surface roughness allowing the immobilization of a high amount of receptors on a small surface area. Since SiGe combined low cost of Si and intrinsic properties of Ge with high mobility carriers, we focused the study on this particularly interesting material. The comparison of the efficiency of a functionalization process involving the spontaneous reduction of diazonium salts is studied on Si(1 0 0), SiGe and Ge semiconductors. XPS analysis of the functionalized surfaces reveals the presence of a covalent grafted layer on all the substrates that was confirmed by AFM. Interestingly, the modified Ge derivatives have still higher surface roughness after derivatization. To support the estimated thickness by XPS, a step measurement of the organic layers is done by AFM or by profilometer technique after a O2 plasma etching of the functionalized layer. This original method is well-adapted to measure the thickness of thin organic films on rough substrates such as germanium. The analyses show a higher chemical grafting on SiGe substrates compared with Si and Ge semiconductors.

  13. 270GHz SiGe BiCMOS manufacturing process platform for mmWave applications

    Kar-Roy, Arjun; Preisler, Edward J.; Talor, George; Yan, Zhixin; Booth, Roger; Zheng, Jie; Chaudhry, Samir; Howard, David; Racanelli, Marco

    2011-11-01

    TowerJazz has been offering the high volume commercial SiGe BiCMOS process technology platform, SBC18, for more than a decade. In this paper, we describe the TowerJazz SBC18H3 SiGe BiCMOS process which integrates a production ready 240GHz FT / 270 GHz FMAX SiGe HBT on a 1.8V/3.3V dual gate oxide CMOS process in the SBC18 technology platform. The high-speed NPNs in SBC18H3 process have demonstrated NFMIN of ~2dB at 40GHz, a BVceo of 1.6V and a dc current gain of 1200. This state-of-the-art process also comes with P-I-N diodes with high isolation and low insertion losses, Schottky diodes capable of exceeding cut-off frequencies of 1THz, high density stacked MIM capacitors, MOS and high performance junction varactors characterized up to 50GHz, thick upper metal layers for inductors, and various resistors such as low value and high value unsilicided poly resistors, metal and nwell resistors. Applications of the SBC18H3 platform for millimeter-wave products for automotive radars, phased array radars and Wband imaging are presented.

  14. SiGe BiCMOS manufacturing platform for mmWave applications

    Kar-Roy, Arjun; Howard, David; Preisler, Edward; Racanelli, Marco; Chaudhry, Samir; Blaschke, Volker

    2010-10-01

    TowerJazz offers high volume manufacturable commercial SiGe BiCMOS technology platforms to address the mmWave market. In this paper, first, the SiGe BiCMOS process technology platforms such as SBC18 and SBC13 are described. These manufacturing platforms integrate 200 GHz fT/fMAX SiGe NPN with deep trench isolation into 0.18μm and 0.13μm node CMOS processes along with high density 5.6fF/μm2 stacked MIM capacitors, high value polysilicon resistors, high-Q metal resistors, lateral PNP transistors, and triple well isolation using deep n-well for mixed-signal integration, and, multiple varactors and compact high-Q inductors for RF needs. Second, design enablement tools that maximize performance and lowers costs and time to market such as scalable PSP and HICUM models, statistical and Xsigma models, reliability modeling tools, process control model tools, inductor toolbox and transmission line models are described. Finally, demonstrations in silicon for mmWave applications in the areas of optical networking, mobile broadband, phased array radar, collision avoidance radar and W-band imaging are listed.

  15. Interfacial Phonon Transport Through Si/Ge Multilayer Film Using Monte Carlo Scheme With Spectral Transmissivity

    Xin Ran

    2018-05-01

    Full Text Available The knowledge of interfacial phonon transport accounting for detailed phonon spectral properties is desired because of its importance for design of nanoscale energy systems. In this work, we investigate the interfacial phonon transport through Si/Ge multilayer films using an efficient Monte Carlo scheme with spectral transmissivity, which is validated for cross-plane phonon transport through both Si/Ge single-layer and Si/Ge bi-layer thin films by comparing with the discrete-ordinates solution. Different thermal boundary conductances between even the same material pair are declared at different interfaces within the multilayer system. Furthermore, the thermal boundary conductances at different interfaces show different trends with varying total system size, with the variation slope, very different as well. The results are much different from those in the bi-layer thin film or periodic superlattice. These unusual behaviors can be attributed to the combined interfacial local non-equilibrium effect and constraint effect from other interfaces.

  16. Ion beam analysis of the dry thermal oxidation of thin polycrystalline SiGe films

    Kling, A.; Soares, J.C.; Prieto, A.C.; Jimenez, J.; Rodriguez, A.; Sangrador, J.; Rodriguez, T.

    2005-01-01

    Nanoparticles of Ge embedded in a formed dielectric matrix appear as very promising systems for electronic and photonic applications. We present here an exhaustive characterization of the oxidation process of polycrystalline SiGe layers from the starting of its oxidation process to the total oxidation of it. We have characterized the process by RBS, FTIR and Raman spectroscopy, showing the necessity to use different techniques in order to get a full view of the process. First the Si-Si and Si-Ge bonds are oxidized growing SiO 2 , and Ge segregates from the SiO 2 . As soon as all Si is oxidized GeO 2 is growing gradually. RBS has demonstrated to be very useful to characterize the SiO 2 and the remaining non-oxidized poly-SiGe layer thickness, as well as for the determination of the Ge fraction, where the high sensitivity of this technique allows to explore its whole range. On the other hand, for the reliable determination of the GeO 2 thickness, information on the amount of Ge-O bonding had to be obtained from FTIR spectra. Raman spectroscopy yields detailed information about the oxidation processes for different bonds (Si-Si, Si-Ge, Ge-Ge)

  17. Advances in research and development modeling of film deposition for microelectronic applications

    Francombe, Maurice H

    1997-01-01

    Significant progress has occurred during the last few years in device technologies and these are surveyed in this new volume. Included are Si/(Si-Ge) heterojunctions for high-speed integrated circuits, Schottky-barrier arrays in Si and Si-Ge alloys for infrared imaging, III-V quantum-well detector structures operated in the heterodyne mode for high-data-rate communications, and III-V heterostructures and quantum-wells for infrared emissions.

  18. Si-Ge Nano-Structured with Tungsten Silicide Inclusions

    Mackey, Jon; Sehirlioglu, Alp; Dynys, Fred

    2014-01-01

    Traditional silicon germanium high temperature thermoelectrics have potential for improvements in figure of merit via nano-structuring with a silicide phase. A second phase of nano-sized silicides can theoretically reduce the lattice component of thermal conductivity without significantly reducing the electrical conductivity. However, experimentally achieving such improvements in line with the theory is complicated by factors such as control of silicide size during sintering, dopant segregation, matrix homogeneity, and sintering kinetics. Samples are prepared using powder metallurgy techniques; including mechanochemical alloying via ball milling and spark plasma sintering for densification. In addition to microstructural development, thermal stability of thermoelectric transport properties are reported, as well as couple and device level characterization.

  19. Electroplating technologies of alloys

    Kim, Joung Soo; Kim, Seung Ho; Jeong, Hyun Kyu; Hwnag, Sung Sik; Seo, Yong Chil; Kim, Dong Jin; Seo, Moo Hong

    2001-12-01

    In localization of electrosleeving technique, there are some problems like the following articles. Firstly, Patents published by OHT have claimed Ni-P, Ni-B alloy plating and Mo, Mn Cr, W, Co as a pinning agent. Secondly, alloy platings have many restrictions. There are some method to get alloy plating in spite of the various restrictions. If current density increase above limiting current density in one of the metals, both of the metals discharge at the same time. The addition of surface active agent(sufactant) in the plating solution is one of the methods to get alloy plating. Alloy plating using pulse current easily controls chemical composition and structure of deposit. Ni-Fe alloy plating is known to exhibit anomalous type of plating behavior in which deposition of the less noble metal is favoured. Presence of hypophohphite ion can control the iron codeposition by changing the deposition mechanism. Hypophohphite suppresses the deposition of Fe and also promotes Ni. Composite plating will be considered to improve the strength at the high temperature. Addition of particle size of 10δ400μm makes residual stress compressive in plate layer and suppress the grain growth rate at the high temperature. Addition of particle makes suface roughness high and fracture stress low at high temperature. But, selection of the kinds of particle and control of additives amount overcome the problems above

  20. SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers

    Vieira, E. M. F.; Toudert, J.; Rolo, A. G.; Parisini, A.; Leitão, J. P.; Correia, M. R.; Franco, N.; Alves, E.; Chahboun, A.; Martín-Sánchez, J.; Serna, R.; Gomes, M. J. M.

    2017-08-01

    In this work, we report on the production of regular (SiGe/SiO2)20 multilayer structures by conventional RF-magnetron sputtering, at 350 °C. Transmission electron microscopy, scanning transmission electron microscopy, raman spectroscopy, and x-ray reflectometry measurements revealed that annealing at a temperature of 1000 °C leads to the formation of SiGe nanocrystals between SiO2 thin layers with good multilayer stability. Reducing the nominal SiGe layer thickness (t SiGe) from 3.5-2 nm results in a transition from continuous SiGe crystalline layer (t SiGe ˜ 3.5 nm) to layers consisting of isolated nanocrystals (t SiGe ˜ 2 nm). Namely, in the latter case, the presence of SiGe nanocrystals ˜3-8 nm in size, is observed. Spectroscopic ellipsometry was applied to determine the evolution of the onset in the effective optical absorption, as well as the dielectric function, in SiGe multilayers as a function of the SiGe thickness. A clear blue-shift in the optical absorption is observed for t SiGe ˜ 2 nm multilayer, as a consequence of the presence of isolated nanocrystals. Furthermore, the observed near infrared values of n = 2.8 and k = 1.5 are lower than those of bulk SiGe compounds, suggesting the presence of electronic confinement effects in the nanocrystals. The low temperature (70 K) photoluminescence measurements performed on annealed SiGe/SiO2 nanostructures show an emission band located between 0.7-0.9 eV associated with the development of interface states between the formed nanocrystals and surrounding amorphous matrix.

  1. sigE facilitates the adaptation of Bordetella bronchiseptica to stress conditions and lethal infection in immunocompromised mice

    Barchinger Sarah E

    2012-08-01

    Full Text Available Abstract Background The cell envelope of a bacterial pathogen can be damaged by harsh conditions in the environment outside a host and by immune factors during infection. Cell envelope stress responses preserve the integrity of this essential compartment and are often required for virulence. Bordetella species are important respiratory pathogens that possess a large number of putative transcription factors. However, no cell envelope stress responses have been described in these species. Among the putative Bordetella transcription factors are a number of genes belonging to the extracytoplasmic function (ECF group of alternative sigma factors, some of which are known to mediate cell envelope stress responses in other bacteria. Here we investigate the role of one such gene, sigE, in stress survival and pathogenesis of Bordetella bronchiseptica. Results We demonstrate that sigE encodes a functional sigma factor that mediates a cell envelope stress response. Mutants of B. bronchiseptica strain RB50 lacking sigE are more sensitive to high temperature, ethanol, and perturbation of the envelope by SDS-EDTA and certain β-lactam antibiotics. Using a series of immunocompromised mice deficient in different components of the innate and adaptive immune responses, we show that SigE plays an important role in evading the innate immune response during lethal infections of mice lacking B cells and T cells. SigE is not required, however, for colonization of the respiratory tract of immunocompetent mice. The sigE mutant is more efficiently phagocytosed and killed by peripheral blood polymorphonuclear leukocytes (PMNs than RB50, and exhibits decreased cytotoxicity toward macrophages. These altered interactions with phagocytes could contribute to the defects observed during lethal infection. Conclusions Much of the work on transcriptional regulation during infection in B. bronchiseptica has focused on the BvgAS two-component system. This study reveals that the SigE

  2. Electrochemical deposition of La-Mg alloys in LaCl3-MgCl2-KCl system with molten salt electrolysis process

    Sahoo Kumar D.

    2014-01-01

    Full Text Available La-Mg alloys of different compositions were prepared by electrolysis of LaCl3-MgCl2-KCl melts. Different phases of La-Mg alloys were characterized by X-ray diffraction (XRD and Scanning Electron Microscopy (SEM. Energy dispersive spectrometry (EDS and Inductively Coupled Plasma-Atomic Emission Spectroscopy (ICP-AES analyses showed that chemical compositions of La-Mg alloys were consistent with phase structures of XRD pattern, and magnesium content in the alloy could be controlled by electrolysis parameters. The effects of various process parameters such as concentration of magnesium chloride in the bath, temperature of electrolysis and cathode current density on the current efficiency have been investigated. A maximum current efficiency of 85% and yield of 80% was obtained from the bath at 12.5A/cm2 current density at an operating temp 850°C.

  3. Unlocking the Origin of Superior Performance of a Si-Ge Core-Shell Nanowire Quantum Dot Field Effect Transistor.

    Dhungana, Kamal B; Jaishi, Meghnath; Pati, Ranjit

    2016-07-13

    The sustained advancement in semiconducting core-shell nanowire technology has unlocked a tantalizing route for making next generation field effect transistor (FET). Understanding how to control carrier mobility of these nanowire channels by applying a gate field is the key to developing a high performance FET. Herein, we have identified the switching mechanism responsible for the superior performance of a Si-Ge core-shell nanowire quantum dot FET over its homogeneous Si counterpart. A quantum transport approach is used to investigate the gate-field modulated switching behavior in electronic current for ultranarrow Si and Si-Ge core-shell nanowire quantum dot FETs. Our calculations reveal that for the ON state, the gate-field induced transverse localization of the wave function restricts the carrier transport to the outer (shell) layer with the pz orbitals providing the pathway for tunneling of electrons in the channels. The higher ON state current in the Si-Ge core-shell nanowire FET is attributed to the pz orbitals that are distributed over the entire channel; in the case of Si nanowire, the participating pz orbital is restricted to a few Si atoms in the channel resulting in a smaller tunneling current. Within the gate bias range considered here, the transconductance is found to be substantially higher in the case of a Si-Ge core-shell nanowire FET than in a Si nanowire FET, which suggests a much higher mobility in the Si-Ge nanowire device.

  4. A study of corrosion behavior of Ni-22Cr-13Mo-3W alloy under hygroscopic salt deposits on hot surface

    Badwe, Sunil; Raja, K.S.; Misra, M.

    2006-01-01

    Alloy 22, a nickel base Ni-22Cr-13Mo-3W alloy has an excellent corrosion resistance in oxidizing and reducing environments. Most of the corrosion studies on Alloy 22 have been conducted using conventional chemical or electrochemical methods. In the present investigation, the specimen was directly heated instead of heating the electrolyte, thereby simulating the nuclear waste package container temperature profile. Corrosion behavior of Alloy 22 and evaporation conditions of water diffusing on the container were evaluated using the newly devised heated electrode corrosion test (HECT) method in simulated acidified water (SAW) and simulated concentrated water (SCW) environments. In this method, the concentration of the environment varied with test duration. The corrosion rate of Alloy 22 was not affected by the continuous increase in ionic strength of the SAW (pH 3) environment. Passivation kinetics was faster with increase in concentration of the electrolytes. The major difference between the conventional test and HECT was the aging characteristics of the passive film of Alloy 22. The heated electrode corrosion test can be used for evaluating materials for construction of heat transfer equipments such as evaporators

  5. Ge nanobelts with high compressive strain fabricated by secondary oxidation of self-assembly SiGe rings

    Lu, Weifang; Li, Cheng; Lin, Guangyang

    2015-01-01

    Curled Ge nanobelts were fabricated by secondary oxidation of self-assembly SiGe rings, which were exfoliated from the SiGe stripes on the insulator. The Ge-rich SiGe stripes on insulator were formed by hololithography and modified Ge condensation processes of Si0.82Ge0.18 on SOI substrate. Ge...... nanobelts under a residual compressive strain of 2% were achieved, and the strain should be higher before partly releasing through bulge islands and breakage of the curled Ge nanobelts during the secondary oxidation process. The primary factor leading to compressive strain is thermal shrinkage of Ge...... nanobelts, which extrudes to Ge nanobelts in radial and tangent directions during the cooling process. This technique is promising for application in high-mobility Ge nano-scale transistors...

  6. Lattice damage in ion-implanted silicon-germanium alloys

    Haynes, T.E.; Holland, O.W.

    1992-08-01

    The damage produced in Si 1-x Ge x alloys (0≤x≤1) by implantation of 70--100 keV 30 Si + has been measured as a function of temperature and fluence by ion channeling. For all compositions, the damage efficiency decreased sharply as the implant temperature was increased between room temperature and 150 degrees C. Furthermore, the damage efficiency in alloys of intermediate compositions (0.34≤x≤0.5) exceeds that in Ge, especially at elevated temperatures, despite the larger cascade energy density in Ge. It is shown that this behavior can be described based on a model in which the point-defect mobility is the dominant factor controlling damage retention, rather than the cascade energy density. This approach provides a framework for understanding other temperature-dependent phenomena related to damage growth in Si-Ge alloys including dose-rate effects and damage saturation in MeV implantation

  7. Microstructure and mechanical performance of depositing CuSi3 Cu alloy onto 30CrMnSi steel plate by the novel consumable and non-consumable electrodes indirect arc welding

    Wang, Jun; Cao, Jian; Feng, Jicai

    2010-01-01

    A novel consumable and non-consumable electrodes indirect arc welding (CNC-IAW) with low heat input was successfully applied in depositing CuSi 3 Cu alloy onto 30CrMnSi steel plate. The indirect arc was generated between the consumable and non-consumable welding torch. The microstructure of the deposited weld was analyzed by means of scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and optical microscopy (OM). The results showed that the dilution ratio of the bead-on-plate weld was controlled no higher than 5% and the deleterious iron picking up was effectively restrained. The deposited metal mainly consisted of ε-Cu solid solution and a small amount of Fe 2 Si phase. In the interfacial zone between the deposited metal and base metal, the thickness of the zone changed from thick to thin and the microstructure changed from complex to simple from the middle to both sides. In the middle of the interfacial zone, the microstructure presented three sub-layers consisting of Fe 3 Si (L)/Fe 3 Si (S) + ε-Cu/α-Fe. In the both sides of the interfacial zone, the microstructure presented single α-Fe layer. The formation mechanism of the interfacial zone could be successfully explained by the formation of the Fe liquid-solid phase zone adjacent to the Fe base metal and the interfusion between Fe and Si. The average compressive shear strength reached 321 MPa and its fracture morphology mainly belonged to ductile fracture.

  8. Characterisation of diode-connected SiGe BiCMOS HBTs for space applications

    Venter, Johan; Sinha, Saurabh; Lambrechts, Wynand

    2016-02-01

    Silicon-germanium (SiGe) bipolar complementary metal-oxide semiconductor (BiCMOS) transistors have vertical doping profiles reaching deeper into the substrate when compared to lateral CMOS transistors. Apart from benefiting from high-speed, high current gain and low-output resistance due to its vertical profile, BiCMOS technology is increasingly becoming a preferred technology for researchers to realise next-generation space-based optoelectronic applications. BiCMOS transistors have inherent radiation hardening, to an extent predictable cryogenic performance and monolithic integration potential. SiGe BiCMOS transistors and p-n junction diodes have been researched and used as a primary active component for over the last two decades. However, further research can be conducted with diode-connected heterojunction bipolar transistors (HBTs) operating at cryogenic temperatures. This work investigates these characteristics and models devices by adapting standard fabrication technology components. This work focuses on measurements of the current-voltage relationship (I-V curves) and capacitance-voltage relationships (C-V curves) of diode-connected HBTs. One configuration is proposed and measured, which is emitterbase shorted. The I-V curves are measured for various temperature points ranging from room temperature (300 K) to the temperature of liquid nitrogen (77 K). The measured datasets are used to extract a model of the formed diode operating at cryogenic temperatures and used as a standard library component in computer aided software designs. The advantage of having broad-range temperature models of SiGe transistors becomes apparent when considering implementation of application-specific integrated circuits and silicon-based infrared radiation photodetectors on a single wafer, thus shortening interconnects and lowering parasitic interference, decreasing the overall die size and improving on overall cost-effectiveness. Primary applications include space-based geothermal

  9. Towards rhombohedral SiGe epitaxy on 150mm c-plane sapphire substrates

    Duzik, Adam J.; Park, Yeonjoon; Choi, Sang H.

    2015-04-01

    Previous work demonstrated for the first time the ability to epitaxially grow uniform single crystal diamond cubic SiGe (111) films on trigonal sapphire (0001) substrates. While SiGe (111) forms two possible crystallographic twins on sapphire (0001), films consisting primarily of one twin were produced on up to 99.95% of the total wafer area. This permits new bandgap engineering possibilities and improved group IV based devices that can exploit the higher carrier mobility in Ge compared to Si. Models are proposed on the epitaxy of such dissimilar crystal structures based on the energetic favorability of crystallographic twins and surface reconstructions. This new method permits Ge (111) on sapphire (0001) epitaxy, rendering Ge an economically feasible replacement for Si in some applications, including higher efficiency Si/Ge/Si quantum well solar cells. Epitaxial SiGe films on sapphire showed a 280% increase in electron mobility and a 500% increase in hole mobility over single crystal Si. Moreover, Ge possesses a wider bandgap for solar spectrum conversion than Si, while the transparent sapphire substrate permits an inverted device structure, increasing the total efficiency to an estimated 30-40%, much higher than traditional Si solar cells. Hall Effect mobility measurements of the Ge layer in the Si/Ge/Si quantum well structure were performed to demonstrate the advantage in carrier mobility over a pure Si solar cell. Another application comes in the use of microelectromechanical devices technology, where high-resistivity Si is currently used as a substrate. Sapphire is a more resistive substrate and offers better performance via lower parasitic capacitance and higher film carrier mobility over the current Si-based technology.

  10. Magnetic behavior of Si-Ge bond in SixGe4-x nano-clusters

    Nahali, Masoud; Mehri, Ali

    2018-06-01

    The structure of SixGe4-x nano-clusters were optimized by MPW1B95 level of theory using MG3S and SDB-aug-cc-PVTZ basis set. The agreement of the calculated ionization and dissociation energies with experimental values validates the reported structures of nano-clusters and justifies the use of hybrid meta density functional method. Since the Si-Si bond is stronger than Si-Ge and Ge-Ge bonds, the Si-Si, Si-Ge, and Ge-Ge diagonal bonds determine the precedence of the stability in these nano-clusters. The hybrid meta density functional calculations were carried out to investigate the adsorption of CO on all possible SixGe4-x nano-clusters. It was found that the silicon atom generally makes a stronger bond with CO than germanium and thereby preferentially affects the shape of structures having higher multiplicity. In Si-Ge structures with higher spin more than 95% of spins accumulate on positions with less bonds to other atoms of the cluster. Through CO adsorption on these clusters bridge structures are made that behave as spin bridge which conduct the spin from the nano-cluster surface to the adsorbate atoms. A better understanding of bridged structures was achieved upon introducing the 'spin bridge' concept. Based on exhaustive spin density analysis, it was found that the reason for the extra negative charge on oxygen in the bridged structures is the relocation of spin from the surface through the bridge.

  11. SiGe HBT linear-in-dB high dynamic range RF envelope detectors and wideband high linearity amplifiers

    Pan, Hsuan-yu

    2010-01-01

    This research work aims on exploiting SiGe HBT technologies in high dynamic range wideband RF linear-in- dB envelope detectors and linear amplifiers. First, an improved all-npn broadband highly linear SiGe HBT differential amplifier is presented based on a variation of Caprio's Quad. A broadband linear amplifier with 46dBm OIP₃ at 20MHz, 34dBm OIP₃ at 1GHz, 6dB noise figure and 10.3dBm P₁dB is demonstrated. Second, an improved exact dynamic model of a fast-settling linear-in-dB Automatic Gain...

  12. Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

    Ozcan, Ahmet S., E-mail: asozcan@us.ibm.com [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States); Lavoie, Christian; Jordan-Sweet, Jean [IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598 (United States); Alptekin, Emre; Zhu, Frank [IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, New York 12533 (United States); Leith, Allen; Pfeifer, Brian D.; LaRose, J. D.; Russell, N. M. [TEL Epion Inc., 900 Middlesex Turnpike, Bldg. 6, Billerica, Massachusetts 01821 (United States)

    2016-04-21

    We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.

  13. A note on the Sumerian expression SI-ge4-de3/dam

    Widell, Magnus

    2002-12-01

    Full Text Available The expression SI-ge4-dam/de3 appears in some of the loan documents of the Ur III period where it was used to establish the interest rate or the loan fee. In addition, it is sometimes preceded by ki-ba 'in its/this place/ground' or, in some cases, ma2 -a 'in the boat'. The regular verb SI.g was closely related, perhaps even synonymous with, the reduplication verb ḡar/ḡa2-ḡa2 'to put' or 'to place'. While it may be concluded that SI-ge4-dam/de3 had nothing to do with the verb si 'to fill' or gi4 'to return', the correct analysis of the expression remains somewhat uncertain. The article proposes that the SI should be read se and understood as a phonetic writing for the regular verb se3.g 'to put', 'to place'. The combination of the verb with the ki-ba may suggest that a more parochial form of keeping products existed side by side with the large centralized granaries and storehouses of the city.La expresión SI-ge4-dam/de3 aparece en algunos contratos de préstamo del período de Ur III, donde se empleaba para determinar el interés de dicho préstamo. Por otra parte, este término se hallaba a veces precedido de ki-ba 'en su/este lugar/suelo', y en algunos casos por ma2 -a 'en la barca'. El verbo regular SI.g está muy relacionado (quizás es incluso sinónimo con el verbo de la clase de la reduplicación ḡar/ḡa2-ḡa2 'poner' o 'colocar'. Mientras que puede concluirse que SI-ge4-dam/de3 no tiene nada que ver con el verbo si 'llenar', ni con gi4 'regresar, devolver', el análisis correcto de la expresión sigue siendo, de algún modo, incierto. En el artículo se propone que SI puede leerse como se , entendiéndolo como una escritura fonética del verbo regular se3.g 'poner', 'colocar'. La combinación del verbo con ki-ba podría indicar que, junto a los grandes graneros y almacenes centrales de la ciudad, había un modo distinto y más modesto de conservar los productos.

  14. Observation of spin-selective tunneling in SiGe nanocrystals.

    Katsaros, G; Golovach, V N; Spathis, P; Ares, N; Stoffel, M; Fournel, F; Schmidt, O G; Glazman, L I; De Franceschi, S

    2011-12-09

    Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in the valence band of the semiconductor. We demonstrate both experimentally and theoretically that spin-selective tunneling in semiconductor nanostructures can be achieved without the use of ferromagnetic contacts. The reported effect, which relies on mixing the light and heavy holes, should be observable in a broad class of quantum-dot systems formed in semiconductors with a degenerate valence band.

  15. Heavy Ion Microbeam- and Broadbeam-Induced Current Transients in SiGe HBTs

    Pellish, Jonathan A.; Reed, R. A.; McMorrow, D.; Vizkelethy, G.; Ferlet-Cavrois, V.; Baggio, J.; Duhamel, O.; Moen, K. A.; Phillips, S. D.; Diestelhorst, R. M.; hide

    2009-01-01

    IBM 5AM SiGe HBT is device-under-test. High-speed measurement setup. Low-impedance current transient measurements. SNL, JYFL, GANIL. Microbeam to broadbeam position inference. Improvement to state-of-the-art. Microbeam (SNL) transients reveal position dependent heavy ion response, Unique response for different device regions Unique response for different bias schemes. Similarities to TPA pulsed-laser data. Broadbeam transients (JYFL and GANIL) provide realistic heavy ion response. Feedback using microbeam data. Overcome issues of LET and ion range with microbeam. **Angled Ar-40 data in full paper. Data sets yield first-order results, suitable for TCAD calibration feedback.

  16. Technology computer aided design for Si, SiGe and GaAs integrated circuits

    Armstrong, GA

    2007-01-01

    The first book to deal with a broad spectrum of process and device design, and modelling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Examples for types of Si-, SiGe-, GaAs- and InP-based heterostructure MOS and bipolar transistors are compared with experimental data from state-of-the-art devices. With various aspects of silicon heterostructures, this book presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and-

  17. Production of three-dimensional quantum dot lattice of Ge/Si core-shell quantum dots and Si/Ge layers in an alumina glass matrix.

    Buljan, M; Radić, N; Sancho-Paramon, J; Janicki, V; Grenzer, J; Bogdanović-Radović, I; Siketić, Z; Ivanda, M; Utrobičić, A; Hübner, R; Weidauer, R; Valeš, V; Endres, J; Car, T; Jerčinović, M; Roško, J; Bernstorff, S; Holy, V

    2015-02-13

    We report on the formation of Ge/Si quantum dots with core/shell structure that are arranged in a three-dimensional body centered tetragonal quantum dot lattice in an amorphous alumina matrix. The material is prepared by magnetron sputtering deposition of Al2O3/Ge/Si multilayer. The inversion of Ge and Si in the deposition sequence results in the formation of thin Si/Ge layers instead of the dots. Both materials show an atomically sharp interface between the Ge and Si parts of the dots and layers. They have an amorphous internal structure that can be crystallized by an annealing treatment. The light absorption properties of these complex materials are significantly different compared to films that form quantum dot lattices of the pure Ge, Si or a solid solution of GeSi. They show a strong narrow absorption peak that characterizes a type II confinement in accordance with theoretical predictions. The prepared materials are promising for application in quantum dot solar cells.

  18. Electrodeposition of zinc--nickel alloys coatings

    Dini, J W; Johnson, H R

    1977-10-01

    One possible substitute for cadmium in some applications is a zinc--nickel alloy deposit. Previous work by others showed that electrodeposited zinc--nickel coatings containing about 85 percent zinc and 15 percent nickel provided noticeably better corrosion resistance than pure zinc. Present work which supports this finding also shows that the corrosion resistance of the alloy deposit compares favorably with cadmium.

  19. Effects of Cd{sub 1-x}Zn{sub x}S alloy composition and post-deposition air anneal on ultra-thin CdTe solar cells produced by MOCVD

    Clayton, A.J., E-mail: Andrew.J.Clayton@Swansea.ac.uk [Centre for Solar Energy Research, College of Engineering, Swansea University, OpTIC, St. Asaph, LL17 0JD (United Kingdom); Baker, M.A.; Babar, S.; Grilli, R. [The Surface Analysis Laboratory, Department of Mechanical Engineering Sciences, University of Surrey, Guildford, GU2 7XH (United Kingdom); Gibson, P.N. [Institute for Health and Consumer Protection, Joint Research Centre of the European Commission, 21027, Ispra, VA (Italy); Kartopu, G.; Lamb, D.A. [Centre for Solar Energy Research, College of Engineering, Swansea University, OpTIC, St. Asaph, LL17 0JD (United Kingdom); Barrioz, V. [Engineering and Environment, Department of Physics and Electrical Engineering, Northumbria University, Newcastle, NE1 8ST (United Kingdom); Irvine, S.J.C. [Centre for Solar Energy Research, College of Engineering, Swansea University, OpTIC, St. Asaph, LL17 0JD (United Kingdom)

    2017-05-01

    Ultra-thin CdTe:As/Cd{sub 1-x}Zn{sub x}S photovoltaic solar cells with an absorber thickness of 0.5 μm were deposited by metal-organic chemical vapour deposition on indium tin oxide coated boro-aluminosilicate substrates. The Zn precursor concentration was varied to compensate for Zn leaching effects after CdCl{sub 2} activation treatment. Analysis of the solar cell composition and structure by X-ray photoelectron spectroscopy depth profiling and X-ray diffraction showed that higher concentrations of Zn in the Cd{sub 1-x}Zn{sub x}S window layer resulted in suppression of S diffusion across the CdTe/Cd{sub 1-x}Zn{sub x}S interface after CdCl{sub 2} activation treatment. Excessive Zn content in the Cd{sub 1-x}Zn{sub x}S alloy preserved the spectral response in the blue region of the solar spectrum, but increased series resistance for the solar cells. A modest increase in the Zn content of the Cd{sub 1-x}Zn{sub x}S alloy together with a post-deposition air anneal resulted in an improved blue response and an enhanced open circuit voltage and fill factor. This device yielded a mean efficiency of 8.3% over 8 cells (0.25 cm{sup 2} cell area) and best cell efficiency of 8.8%. - Highlights: • CdCl{sub 2} anneal treatment resulted in S diffusing to the back contact. • High Zn levels created mixed cubic/hexagonal structure at the p-n junction. • Increased Zn in Cd{sub 1-x}Zn{sub x}S supressed S diffusion into CdTe. • Device V{sub oc} was enhanced overall with an additional back surface air anneal.

  20. SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations

    Choi, Shinhyun; Tan, Scott H.; Li, Zefan; Kim, Yunjo; Choi, Chanyeol; Chen, Pai-Yu; Yeon, Hanwool; Yu, Shimeng; Kim, Jeehwan

    2018-01-01

    Although several types of architecture combining memory cells and transistors have been used to demonstrate artificial synaptic arrays, they usually present limited scalability and high power consumption. Transistor-free analog switching devices may overcome these limitations, yet the typical switching process they rely on—formation of filaments in an amorphous medium—is not easily controlled and hence hampers the spatial and temporal reproducibility of the performance. Here, we demonstrate analog resistive switching devices that possess desired characteristics for neuromorphic computing networks with minimal performance variations using a single-crystalline SiGe layer epitaxially grown on Si as a switching medium. Such epitaxial random access memories utilize threading dislocations in SiGe to confine metal filaments in a defined, one-dimensional channel. This confinement results in drastically enhanced switching uniformity and long retention/high endurance with a high analog on/off ratio. Simulations using the MNIST handwritten recognition data set prove that epitaxial random access memories can operate with an online learning accuracy of 95.1%.

  1. Electroplated zinc-cobalt alloy

    Carpenter, D.E.O.S.; Farr, J.P.G.

    2005-01-01

    Recent work on the deposition and use of ectrodeposited zinc-cobalt alloys is surveyed. Alloys containing lower of Nuclear quantities of cobalt are potentially more useful. The structures of the deposits is related to their chemical and mechanical properties. The inclusion of oxide and its role in the deposition mechanism may be significant. Chemical and engineering properties relate to the metallurgical structure of the alloys, which derives from the mechanism of deposition. The inclusion of oxides and hydroxides in the electroplate may provide evidence for this mechanism. Electrochemical impedance measurements have been made at significant deposition potentials, in alkaline electrolytes. These reveal a complex electrode behaviour which depends not only on the electrode potential but on the Co content of the electrolyte. For the relevant range of cathodic potential zinc-cobalt alloy electrodeposition occurs through a stratified interface. The formation of an absorbed layer ZnOH/sup +/ is the initial step, this inhibits the deposition of cobalt at low cathodic potentials, so explaining its 'anomalous deposition'. A porous layer of zinc forms on the adsorbed ZnOH/sup +/ at underpotential. As the potential becomes more cathodic, cobalt co- deposits from its electrolytic complex forming a metallic solid solution of Co in Zn. In electrolytes containing a high concentration of cobalt a mixed entity (ZnCo)/sub +/ is assumed to adsorb at the cathode from which a CoZn intermetallic deposits. (author)

  2. Sensitivity of the crystal quality of SiGe layers grown at low temperatures by trisilane and germane

    Abedin, A., E-mail: aabedin@kth.se; Moeen, M.; Cappetta, C.; Östling, M.; Radamson, H.H., E-mail: rad@kth.se

    2016-08-31

    This work investigates the crystal quality of SiGe layers grown at low temperatures using trisilane, and germane precursors. The crystal quality sensitivity was monitored for hydrogen chloride and/or minor oxygen amount during SiGe epitaxy or at the interface of SiGe/Si layers. The quality of the epi-layers was examined by quantifying noise parameter, K{sub 1/f} obtained from the power spectral density vs. 1/f curves. The results indicate that while it is difficult to detect small defect densities in SiGe layers by physical material characterization, the noise measurement could reveal the effects of oxygen contamination as low as 0.16 mPa inside and in the interface of the layers. - Highlights: • SiGe layers were grown using trisilane and germane. • Effect of HCl flow on Ge content and growth rate was investigated. • O{sub 2} partial pressures up to 4.3 mPa did not affect x-ray diffraction pattern. • O{sub 2} partial pressures as low as 0.16 mPa increased the noise level. • HCl increased metal contaminations of the layers and the noise level consequently.

  3. Application of a Pelletron accelerator to study total dose radiation effects on 50 GHz SiGe HBTs

    Praveen, K.C.; Pushpa, N.; Naik, P.S. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570 006 (India); Cressler, John D. [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA (United States); Tripathi, Ambuj [Inter University Accelerator Centre (IUAC), New Delhi 110 067 (India); Gnana Prakash, A.P., E-mail: gnanaprakash@physics.uni-mysore.ac.in [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570 006 (India)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer Total dose effects of 50 MeV Li3+ ion on 50 GHz SiGe HBTs is investigated. Black-Right-Pointing-Pointer Ion irradiated results were compared with Co-60 gamma results. Black-Right-Pointing-Pointer 50 MeV Li ions create more damage in E-B spacer oxide when compared to Co-60 gamma radiation. Black-Right-Pointing-Pointer Co-60 gamma radiation create more damage in STI oxide when compared to 50 MeV Li ions. Black-Right-Pointing-Pointer Worst case total dose radiation effects can be studied using Pelletron accelerator facilities. - Abstract: We have investigated the effects of 50 MeV lithium ion irradiation on the DC electrical characteristics of first-generation silicon-germanium heterojunction bipolar transistors (50 GHz SiGe HBTs) in the dose range of 600 krad to 100 Mrad. The results of 50 MeV Li{sup 3+} ion irradiation on the SiGe HBTs are compared with 63 MeV proton and Co-60 gamma irradiation results in the same dose range in order to understand the damage induced by different LET species. The radiation response of emitter-base (EB) spacer oxide and shallow trench isolation (STI) oxide to different irradiation types are discussed in this paper. We have also focused on the efficacy in the application of a Pelletron accelerator to study total dose irradiation studies in SiGe HBTs.

  4. The Relationship between Nanocluster Precipitation and Thermal Conductivity in Si/Ge Amorphous Multilayer Films: Effects of Cu Addition

    Ahmad Ehsan Mohd Tamidi

    2016-01-01

    Full Text Available We have used a molecular dynamics technique to simulate the relationship between nanocluster precipitation and thermal conductivity in Si/Ge amorphous multilayer films, with and without Cu addition. In the study, the Green-Kubo equation was used to calculate thermal conductivity in these materials. Five specimens were prepared: Si/Ge layers, Si/(Ge + Cu layers, (Si + Cu/(Ge + Cu layers, Si/Cu/Ge/Cu layers, and Si/Cu/Ge layers. The number of precipitated nanoclusters in these specimens, which is defined as the number of four-coordinate atoms, was counted along the lateral direction of the specimens. The observed results of precipitate formation were considered in relation to the thermal conductivity results. Enhancement of precipitation of nanoclusters by Cu addition, that is, densification of four-coordinate atoms, can prevent the increment of thermal conductivity. Cu dopant increases the thermal conductivity of these materials. Combining these two points, we concluded that Si/Cu/Ge is the best structure to improve the conversion efficiency of the Si/Ge amorphous multilayer films.

  5. Influence of composition and substrate bias on structure and inert-gas content of sputter-deposited Ni-La alloys

    Knoll, R.W.; McClanahan, E.D.

    1982-09-01

    X-ray diffraction patterns show that the disappearance of crystallinity in the deposit occurs gradually as the La content increases. At the same time, the deposit becomes saturated with Kr. Because there is no evidence of crystalline La metal or Ni-La intermetallic phase in the diffraction data, it may be concluded that each La atom creates a highly disordered (amorphous) region in the lattice, and that this region contains interstitial voids large enough to capture inert gas atoms. Saturation of the gas content with respect to La/Ni ratio might commence when these disordered regions begin to impinge upon one another. Finally, if inert gas atoms occupy interstitial voids within the deposit, then determination of the gas trapping characteristics of the material, using inert gas ions of different sizes, may be a means of studying the structure of glassy vapor-deposited materials. For example, the size distribution of the interstitial voids might be determined in this manner

  6. XRD analysis of strained Ge-SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(0 0 1) substrates

    Franco, N.; Barradas, N.P.; Alves, E.; Vallera, A.M.; Morris, R.J.H.; Mironov, O.A.; Parker, E.H.C.

    2005-01-01

    Ge/Si 1-x Ge x inverted modulation doped heterostructures with Ge channel thickness of 16 and 20 nm were grown by a method of hybrid epitaxy followed by ex situ annealing at 650 deg. C for p-HMOS application. The thicker layers of the virtual substrate (6000 nm graded SiGe up to x = 0.6 and 1000 nm uniform composition with x = 0.6) were produced by ultrahigh vacuum chemical vapor deposition (UHV-CVD) while the thinner, Si(2 nm)-SiGe(20 nm)-Ge-SiGe(15 nm + 5 nm B-doped + 20 nm) active layers were grown by low temperature solid-source (LT-SS) MBE at T = 350 deg. C. As-grown and annealed samples were measured by X-ray diffraction (XRD). Reciprocal space maps (RSMs) allowed us to determine non-destructively the precise composition (∼1%) and strain of the Ge channel, along with similar information regarding the other layers that made up the whole structure. Layer thickness was determined with complementary high-resolution Rutherford backscattering (RBS) experiments

  7. Alloy materials

    Hans Thieme, Cornelis Leo (Westborough, MA); Thompson, Elliott D. (Coventry, RI); Fritzemeier, Leslie G. (Acton, MA); Cameron, Robert D. (Franklin, MA); Siegal, Edward J. (Malden, MA)

    2002-01-01

    An alloy that contains at least two metals and can be used as a substrate for a superconductor is disclosed. The alloy can contain an oxide former. The alloy can have a biaxial or cube texture. The substrate can be used in a multilayer superconductor, which can further include one or more buffer layers disposed between the substrate and the superconductor material. The alloys can be made a by process that involves first rolling the alloy then annealing the alloy. A relatively large volume percentage of the alloy can be formed of grains having a biaxial or cube texture.

  8. Variations in the microstructure of nickel-based alloy coatings with the metalloids boron and silicon as a function of deposition parameters in a dual beam ion system

    Panitz, J.K.G.

    1986-01-01

    We have deposited coatings using a dual beam ion source system with two different targets as sputtering sources; (i) a predominantly amorphous Ni/sub 63.5/Cr/sub 12.3/Fe/sub 3.5/Si/sub 7.9/B/sub 12.8/ foil and (ii) a crystalline Ni/sub 55.3/Cr/sub 16.9/Si/sub 7.2/B/sub 21.6/ slab from a casting. Amorphous coatings were produced by the foil for all conditions studied. The coatings that were deposited from the slab target that were less than 400 nm in thickness which were deposited at rates from 8--50 nm/min appeared to be amorphous. The thicker (>400 nm) coatings and the extremely low deposition rate (2 nm/min) coatings produced by the slab comprised both partially polycrystalline and amorphous material. All of the coatings studied exhibited inferior wear and erosion resistance properties compared to iron-based amorphous metal coatings containing Ti, C, or N, which have been studied by other groups. However, the corrosion resistance to 4 N HCl is good, ranging from less than 0.01 to 0.22 mm/yr as a function of deposition rate, concurrent ion bombardment conditions, and coating thickness

  9. The behavior of ZrO{sub 2}/20%Y{sub 2}O{sub 3} and Al{sub 2}O{sub 3} coatings deposited on aluminum alloys at high temperature regime

    Pintilei, G.L., E-mail: laura_rares082008@yahoo.com [Pitesti University, Faculty of Mechanics and Technology, Str. Targu din Vale nr.1, 110040 Pitesti, Arges (Romania); Technical University “Gheorghe Asachi” of Iasi, Faculty of Mechanics, Bld D. Mangeron nr. 61, 700050 Iasi (Romania); Crismaru, V.I. [Technical University “Gheorghe Asachi” of Iasi, Faculty of Mechanics, Bld D. Mangeron nr. 61, 700050 Iasi (Romania); Abrudeanu, M. [Pitesti University, Faculty of Mechanics and Technology, Str. Targu din Vale nr.1, 110040 Pitesti, Arges (Romania); Munteanu, C. [Technical University “Gheorghe Asachi” of Iasi, Faculty of Mechanics, Bld D. Mangeron nr. 61, 700050 Iasi (Romania); Baciu, E.R. [University of Medicine and Pharmacy “Gr.T.Popa”, Department Implantology, Removable Restorations, Technology, Str. Universitatii nr. 16, 700115 Iasi (Romania); Istrate, B.; Basescu, N. [Technical University “Gheorghe Asachi” of Iasi, Faculty of Mechanics, Bld D. Mangeron nr. 61, 700050 Iasi (Romania)

    2015-10-15

    Highlights: • In both the ZrO{sub 2}/20%Y{sub 2}O{sub 3} and Al{sub 2}O{sub 3} coatings the high temperature caused a decrease of pores volume and a lower thickness of the interface between successive splats. • The NiCr bond layer in the sample with a ZrO{sub 2}/20%Y{sub 2}O{sub 3} suffered a fragmentation due to high temperature exposure and thermal expansion which can lead to coating exfoliation. • The NiCr bond layer in the sample with an Al{sub 2}O{sub 3} coating showed an increase of pore volume due to high temperature. - Abstract: Aluminum alloy present numerous advantages like lightness, high specific strength and diversity which recommend them to a high number of applications from different fields. In extreme environments the protection of aluminum alloys is difficult and requires a high number of requirements like high temperature resistance, thermal fatigue resistance, corrosion fatigue resistance and galvanic corrosion resistance. To obtain these characteristics coatings can be applied to the surfaces so they can enhance the mechanical and chemical properties of the parts. In this paper two coatings were considered for deposition on an AA2024 aluminum alloy, ZrO{sub 2}/20%Y{sub 2}O{sub 3} and Al{sub 2}O{sub 3}. To obtain a better adherence of the coating to the base material an additional bond layer of NiCr is used. Both the coatings and bond layer were deposited by atmospheric plasma spraying on the samples. The samples were subjected to a temperature of 500 °C and after that slowly cooled to room temperature. The samples were analyzed by electron microscopy and X-ray diffraction to determine the morphological and phase changes that occurred during the temperature exposure. To determine the stress level in the parts due to thermal expansion a finite element analysis was performed in the same conditions as the tests.

  10. Characterisation of phase composition, microstructure and microhardness of electroless nickel composite coating co-deposited with SiC on casting aluminium LM24 alloy substrate

    Franco, M.; Sha, Wei; Malinov, Savko

    2013-01-01

    Electroless Ni-P (EN) and composite Ni-P-SiC (ENC) coatings were developed on cast aluminium alloy, LM24. The coating phase composition, microstructure and microhardness were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and microhardness tester, respectively, on as-plated and heat-treated specimens. The original microstructure of the Ni-P matrix is not affected by the inclusion of the hard particles SiC. No formation of Ni-Si phase was observed upto 500°C of ...

  11. A high linearity SiGe HBT LNA for GPS receiver

    Luo Yanbin; Shi Jian; Ma Chengyan; Gan Yebing; Qian Min

    2014-01-01

    A high linearity 1.575 GHz SiGe:HBT low noise amplifier (LNA) for global positioning system applications is described. The bipolar cascoded with an MOSFET LNA was fabricated in a commercial 0.18 μm SiGe BiCMOS process. A resistor bias feed circuit with a feedback resistor was designed for the LNA input transistor to improve its intermodulation and compression performance. The packaged chip tested on board has displayed a noise figure of 1.11 dB, a power gain of 18 dB, an output 1 dB compression point of +7.8 dBm and an input third-order intercept point of +1.8 dBm. The chip occupies a 500 × 560 μm 2 area and consumes 3.6 mA from a 2.85 V power supply. (semiconductor integrated circuits)

  12. Boron diffusion in strained and strain-relaxed SiGe

    Wang, C.C.; Sheu, Y.M.; Liu, Sally; Duffy, R.; Heringa, A.; Cowern, N.E.B.; Griffin, P.B.

    2005-01-01

    SiGe has been utilized for aggressive CMOS technologies development recently and there are many references [M. Shima, T. Ueno, T. Kumise, H. Shido, Y. Sakuma, S. Nakamura, Symposium on VLSI Technology Technical Digest, 2002, pp. 94-95; T. Ghani, M. Armstrong, C. Auth, M. Bost, P. Charvat, G. Glass, T. Hoffmann, K. Johnson, C. Kenyon, J. Klaus, B. McIntyre, K. Mistry, A. Murthy, J. Sandford, M. Silberstein, S. Sivakumar, P. Smith, K. Zawadzki, S. Thompson, M. Bohr, International Electron Devices Meeting Technical Digest, December 2003, pp. 978-980; P. Bai, C. Auth, S. Balakrishnan, M. Bost, R. Brain, V. Chikarmane, R. Heussner, M. Hussein, J. Hwang, D. Ingerly, R. James, J. Jeong, C. Kenyon, E. Lee, S. Lee, N. Lindert, M. Liu, Z. Ma, T. Marieb, A. Murthy, R. Nagisetty, S. Natarajan, J. Neirynck, A. Ott, C. Parker, J. Sebastian, R. Shaheed, S. Sivakumar, J. Steigerwald, S. Tyagi, C. Weber, B. Woolery, A. Yeoh, K. Zhang, M. Bohr, International Electron Devices Meeting Technical Digest, December 2004, pp. 657-660] presenting the advantages brought by it. A better understanding regarding the boron diffusion behavior within and in the vicinity of SiGe is necessary to optimize the extension and the source/drain in pMOSFET. In order to achieve the goal, both effects from mechanical strain and Ge doping on boron diffusion have been investigated. However, only a few publications discuss the impacts of both. Furthermore, most researches investigate these two effects under the conditions of low boron concentration [P. Kuo, J.L. Hoyt, J.F. Gibbons, J.E. Turner, D. Lefforge, Appl. Phys. Lett. 66 (January (5)) (1995) 580-582; N.R. Zangenberg, J. Fage-Pedersen, J. Lundsgaard Hansen, A. Nylandsted Larsen, J. Appl. Phys. 94 (September (6)) (2003) 3883-3890] and high thermal budget anneal [P. Kuo, J.L. Hoyt, J.F. Gibbons, J.E. Turner, D. Lefforge, Appl. Phys. Lett. 66 (January (5)) (1995) 580-582; N.R. Zangenberg, J. Fage-Pedersen, J. Lundsgaard Hansen, A. Nylandsted Larsen, J. Appl

  13. Degradation of Au–Ti contacts of SiGe HBTs during electromagnetic field stress

    Alaeddine, A; Genevois, C; Cuvilly, F; Daoud, K; Kadi, M

    2011-01-01

    This paper addresses electromagnetic field stress effects on SiGe heterojunction bipolar transistors (HBTs)' reliability issues, focusing on the relationship between the stress-induced current and device structure degradations. The origin of leakage currents and electrical parameter shifts in failed transistors has been studied by complementary failure analysis techniques. Characterization of the structure before and after ageing was performed by transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS). For the stressed samples, interface deformations of the titanium (Ti) thin film around all gold (Au) contacts have been clearly detected. These degradations include localized interface reaction between Au and Ti layers as well as their lateral atomic migration causing a significant reduction of Ti thickness. EDS analysis of the disordered region which is near the Si 3 N 4 interface has shown significant signals from Au. These observations could be attributed to the coupling between high current densities induced by stress and thermal effects due to local heating effects

  14. Examination Of Si-Ge Heterostructure Nanowire Growth Using Monte Carlo Simulation

    Nastovjak, A. G.; Neizvestny, I. G.; Shwartz, N. L.

    2011-01-01

    The process of Si-Ge heterostructures formation in nanowires (NWs) grown by vapor-liquid-solid mechanism was investigated using Monte Carlo simulation. Dependences of catalyst drop composition on temperature, flux intensity and nanowire diameter were obtained. Periodical oscillations of drop composition near mean value were observed. Oscillation results from layer-by-layer growth at the drop-whisker interface and necessity of supersaturation onset to start new layer formation. It was demonstrated that it is impossible to grow atomically abrupt axial heterojunctions via classical vapor-liquid-solid mechanism due to gradual change of catalyst drop composition when switching the fluxes. This phenomenon is the main reason of heterojunction blurriness. Junction abruptness was found to be dependent on nanowhisker diameter: in adsorption-induced growth mode abruptness of heterojunction decreases with diameter and in diffusion-induced mode it increases.

  15. Anomalous dose rate effects in gamma irradiated SiGe heterojunction bipolar transistors

    Banerjee, G.; Niu, G.; Cressler, J.D.; Clark, S.D.; Palmer, M.J.; Ahlgren, D.C.

    1999-01-01

    Low dose rate (LDR) cobalt-60 (0.1 rad(Si)/s) gamma irradiated Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs) were studied. Comparisons were made with devices irradiated with 300 rad(Si)/s gamma radiation to verify if LDR radiation is a serious radiation hardness assurance (RHA) issue. Almost no LDR degradation was observed in this technology up to 50 krad(Si). The assumption of the presence of two competing mechanisms is justified by experimental results. At low total dose (le20 krad), an anomalous base current decrease was observed which is attributed to self-annealing of deep-level traps to shallower levels. An increase in base current at larger total doses is attributed to radiation induced generation-recombination (G/R) center generation. Experiments on gate-assisted lateral PNP transistors and 2D numerical simulations using MEDICI were used to confirm these assertions

  16. Surface and interfacial structural characterization of MBE grown Si/Ge multilayers

    Saha, Biswajit; Sharma, Manjula; Sarma, Abhisakh; Rath, Ashutosh; Satyam, P.V.; Chakraborty, Purushottam; Sanyal, Milan K.

    2009-01-01

    Si/Ge multilayer structures have been grown by solid source molecular beam epitaxy (MBE) on Si (1 1 1) and (1 0 0) substrates and were characterized by high-resolution X-ray diffraction (XRD), atomic force microscopy (AFM), high-depth-resolution secondary ion mass spectroscopy (SIMS) and cross-section high-resolution transmission electron microscopy (HRTEM). A reasonably good agreement has been obtained for layer thickness, interfacial structure and diffusion between SIMS and HRTEM measurements. Epitaxial growth and crystalline nature of the individual layer have been probed using cross-sectional HRTEM and XRD measurements. Surface and interface morphological studies by AFM and HRTEM show island-like growth of both Si and Ge nanostructures.

  17. Self-assembly of InAs and Si/Ge quantum dots on structured surfaces

    Patella, F; Sgarlata, A; Arciprete, F; Nufris, S; Szkutnik, P D; Placidi, E; Fanfoni, M; Motta, N; Balzarotti, A

    2004-01-01

    We discuss the self-aggregation process of InAs and Si-Ge quantum dots (QDs) on natural and patterned GaAs(001) and Si(001) and Si(111) surfaces, with reference to our recent studies with scanning tunnelling and atomic force microscopy and current experimental and theoretical works. Various methods for obtaining naturally structured surfaces are briefly surveyed, as the patterning formed by the surface instability and by the strain in mismatched heteroepitaxy, and the latest methods of pre-patterning and growth at selected sites are discussed. Basic topics are also addressed that determine the final morphology of QDs, such as the wetting layer formation, the elastic strain field and the two-dimensional to three-dimensional phase transition

  18. Impacts of doping on epitaxial germanium thin film quality and Si-Ge interdiffusion

    Zhou, Guangnan

    2018-04-03

    Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown, annealed and characterized by several different material characterization methods. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. B doped Ge films have threading dislocations above 1 × 10 cm, while P and As doping can reduce the threading dislocation density to be less than 10 cm without annealing. The interdiffusion of Si and Ge of different films have been investigated experimentally and theoretically. A quantitative model of Si-Ge interdiffusion under extrinsic conditions across the full x range was established including the dislocationmediated diffusion. The Kirkendall effect has been observed. The results are of technical significance for the structure, doping, and process design of Ge-on-Si based devices, especially for photonic applications.

  19. Reliability of high mobility SiGe channel MOSFETs for future CMOS applications

    Franco, Jacopo; Groeseneken, Guido

    2014-01-01

    Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability. This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated. The extensive experimental datasets collected on a variety of processed 300mm wafers and pr...

  20. Impacts of doping on epitaxial germanium thin film quality and Si-Ge interdiffusion

    Zhou, Guangnan; Lee, Kwang Hong; Anjum, Dalaver H.; Zhang, Qiang; Zhang, Xixiang; Tan, Chuan Seng; Xia, Guangrui

    2018-01-01

    Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown, annealed and characterized by several different material characterization methods. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. B doped Ge films have threading dislocations above 1 × 10 cm, while P and As doping can reduce the threading dislocation density to be less than 10 cm without annealing. The interdiffusion of Si and Ge of different films have been investigated experimentally and theoretically. A quantitative model of Si-Ge interdiffusion under extrinsic conditions across the full x range was established including the dislocationmediated diffusion. The Kirkendall effect has been observed. The results are of technical significance for the structure, doping, and process design of Ge-on-Si based devices, especially for photonic applications.

  1. Surface-driven, one-step chemical vapor deposition of γ-Al{sub 4}Cu{sub 9} complex metallic alloy film

    Prud’homme, Nathalie [CIRIMAT, Université de Toulouse - CNRS, 4 allée Emile Monso, BP-44362, 31432 Toulouse Cedex 4 (France); Université Paris-Sud 11, LEMHE/ICMMO, Bat 410, 91405 Orsay Cedex (France); Duguet, Thomas, E-mail: thomas.duguet@ensiacet.fr [CIRIMAT, Université de Toulouse - CNRS, 4 allée Emile Monso, BP-44362, 31432 Toulouse Cedex 4 (France); Samélor, Diane; Senocq, François; Vahlas, Constantin [CIRIMAT, Université de Toulouse - CNRS, 4 allée Emile Monso, BP-44362, 31432 Toulouse Cedex 4 (France)

    2013-10-15

    The present paper is a paradigm for the one-step formation of complex intermetallic coatings by chemical vapor deposition. It genuinely addresses the challenge of depositing an intermetallic coating with comparable contents of Cu and Al. Depending on processing conditions, a pure γ-Al{sub 4}Cu{sub 9} and multi-phase Al-Cu films are grown with wetting properties of the former being similar to its bulk counterpart. The deposition process and its parametric investigation are detailed. Two metalorganic precursors are used taking into account their transport and chemical properties, and deposition temperature ranges. On line and ex situ characterizations enlighten the competition which occurs at the growing surface between molecular fragments, and which limits growth rates. Notably, introducing a partial pressure of hydrogen gas during deposition reduces Al growth rate from dimethylethylamine alane (DMEAA), by displacing the hydrogen desorption equilibrium. This Al partial growth rate decrease is not sufficient to achieve a Cu/Al atomic ratio that is high enough for the formation of intermetallics with close Al and Cu compositions. A fivefold increase of the flux of the gaseous copper(I) cyclopentadienyl triethylphosphine CpCuPEt{sub 3}, whereas the DMEAA flux remains constant, results in the targeted Al/Cu atomic ratio equal to 44/56. Nevertheless, the global growth rate is rendered extremely low by the deposition inhibition caused by a massive phosphine adsorption (-PEt{sub 3}). Despite these limitations, the results pave the way towards the conformal coating of complex surface geometries by such intermetallic compounds.

  2. Mechanical Properties of Spray Cast 7XXX Series Aluminium Alloys

    SALAMCI, Elmas

    2014-01-01

    Mechanical properties of spray deposited and extruded 7xxx series aluminium alloys were investigated in peak aged condition. To study the influence of Zn additions on the mechanical behaviour of spray deposited materials, three alloy compositions were selected, namely: SS70 (11.5% Zn), N707 (10.9% Zn) and 7075 (5.6% Zn). After ageing treatment, notched and unnotched specimens of spray deposited alloys were subjected to tensile tests at room temperature. Experimental results showed...

  3. Nanocrystalline CdS{sub 1−x}Se{sub x} alloys as thin films prepared by chemical bath deposition: Effect of x on the structural and optical properties

    Sanchez-Ramirez, E.A. [Escuela Superior de Ingeniería Química e Industrias Extractivas, Instituto Politécnico Nacional, CP 07738, México D.F. (Mexico); Hernandez-Perez, M.A., E-mail: mhernandezp0606@ipn.mx [Escuela Superior de Ingeniería Química e Industrias Extractivas, Instituto Politécnico Nacional, CP 07738, México D.F. (Mexico); Aguilar-Hernandez, J. [Escuela Superior de Física y Matemáticas, Instituto Politécnico Nacional, CP 07738, México D.F. (Mexico); Rangel-Salinas, E. [Escuela Superior de Ingeniería Química e Industrias Extractivas, Instituto Politécnico Nacional, CP 07738, México D.F. (Mexico)

    2014-12-05

    Highlights: • CdS1−xSe{sub x} films with tunable structural and optical properties were grown by CBD. • Thin films are composed by a solid solution of the CdS{sub 1−x}Se{sub x} ternary alloy. • Crystal size, band gap and photoluminescence signal, decrease with the composition. • Ternary alloys show hexagonal phase with preferential orientation on (0 0 2) plane. • Films with x ⩾ 0.5 show semi-spherical grains composed by nanoworms structures. - Abstract: CdS{sub 1−x}Se{sub x} thin films were deposited on Corning glass substrates at 75 °C by chemical bath deposition (CBD) varying the composition “x” from 0 to 1 at a constant deposition time of 120 min. The composition of the films was adjusted by modifying the concentration as well as the ratio of the precursors. The morphological, compositional, structural and optical properties of the films were analyzed using several techniques such as Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS), X-ray Diffraction (XRD), UV–Vis Spectroscopy (UV–Vis) and Photoluminescence (PL). The films grow as layers following the ion by ion mechanism, the density of the films decreases with x. Films are constituted by clusters (100–600 nm in diameter) of semispherical particles with sizes fluctuating from 10 to 20 nm. For x ⩾ 0.5 the particles are well-arranged in a “worm-like” structure. All the films are polycrystalline, to x = 0 (CdS) the cubic phase is present, the increase of composition promotes the formation of hexagonal phase or a mixture of both cubic and hexagonal phases. Preferential orientation in the (1 0 0) or (0 0 2) plane is observed. The crystal size decreases from 20 to 6 nm when x is increased. The optical properties can be easily tuned by adjusting the composition. Optical absorption analysis shows that the band gap (E{sub g}) value shifts to red in function of x (from 2.47 to 1.99 eV). Photoluminescence signal changes as “x” varies showing a regular behavior

  4. Evaluation of COTS SiGe, SOI, and Mixed Signal Electronic Parts for Extreme Temperature Use in NASA Missions

    Patterson, Richard L.; Hammoud, Ahmad

    2010-01-01

    The NASA Electronic Parts and Packaging (NEPP) Program sponsors a task at the NASA Glenn Research Center titled "Reliability of SiGe, SOI, and Advanced Mixed Signal Devices for Cryogenic Space Missions." In this task COTS parts and flight-like are evaluated by determining their performance under extreme temperatures and thermal cycling. The results from the evaluations are published on the NEPP website and at professional conferences in order to disseminate information to mission planners and system designers. This presentation discusses the task and the 2010 highlights and technical results. Topics include extreme temperature operation of SiGe and SOI devices, all-silicon oscillators, a floating gate voltage reference, a MEMS oscillator, extreme temperature resistors and capacitors, and a high temperature silicon operational amplifier.

  5. Structural, dynamic, and vibrational properties during heat transfer in Si/Ge superlattices: A Car-Parrinello molecular dynamics study

    Ji, Pengfei; Zhang, Yuwen, E-mail: zhangyu@missouri.edu [Department of Mechanical and Aerospace Engineering, University of Missouri, Columbia, Missouri 65211 (United States); Yang, Mo [College of Energy and Power Engineering, University of Shanghai for Science and Technology, Shanghai 200093 (China)

    2013-12-21

    The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective.

  6. Structural, dynamic, and vibrational properties during heat transfer in Si/Ge superlattices: A Car-Parrinello molecular dynamics study

    Ji, Pengfei; Zhang, Yuwen; Yang, Mo

    2013-01-01

    The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective

  7. Structural, dynamic, and vibrational properties during heat transfer in Si/Ge superlattices: A Car-Parrinello molecular dynamics study

    Ji, Pengfei; Zhang, Yuwen; Yang, Mo

    2013-12-01

    The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective.

  8. Effect of strain, substrate surface and growth rate on B-doping in selectively grown SiGe layers

    Ghandi, R.; Kolahdouz, M.; Hallstedt, J.; Wise, R.; Wejtmans, Hans; Radamson, H.H.

    2008-01-01

    In this work, the role of strain and growth rate on boron incorporation in selective epitaxial growth (SEG) of B-doped Si 1-x Ge x (x = 0.15-0.25) layers in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. A focus has been made on the strain distribution and B incorporation in SEG of SiGe layers

  9. Effect of strain, substrate surface and growth rate on B-doping in selectively grown SiGe layers

    Ghandi, R. [School of Information and Communication Technology, KTH (Royal Institute of Technology), Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)], E-mail: ghandi@kth.se; Kolahdouz, M.; Hallstedt, J. [School of Information and Communication Technology, KTH (Royal Institute of Technology), Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden); Wise, R.; Wejtmans, Hans [Texas Instrument, 13121 TI Boulevard, Dallas, Tx 75243 (United States); Radamson, H.H. [School of Information and Communication Technology, KTH (Royal Institute of Technology), Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)

    2008-11-03

    In this work, the role of strain and growth rate on boron incorporation in selective epitaxial growth (SEG) of B-doped Si{sub 1-x}Ge{sub x} (x = 0.15-0.25) layers in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. A focus has been made on the strain distribution and B incorporation in SEG of SiGe layers.

  10. Ultra-broadband Nonlinear Microwave Monolithic Integrated Circuits in SiGe, GaAs and InP

    Krozer, Viktor; Johansen, Tom Keinicke; Djurhuus, Torsten

    2006-01-01

    .5 GHz and ≫ 10 GHz for SiGe BiCMOS and GaAs MMIC, respectively. Analysis of the frequency behaviour of frequency converting devices is presented for improved mixer design. Millimeter-wave front-end components for advanced microwave imaging and communications purposes have also been demonstrated......Analog MMIC circuits with ultra-wideband operation are discussed in view of their frequency limitation and different circuit topologies. Results for designed and fabricated frequency converters in SiGe, GaAs, and InP technologies are presented in the paper. RF type circuit topologies exhibit a flat...... conversion gain with a 3 dB bandwidth of 10 GHz for SiGe and in excess of 20 GHz for GaAs processes. The concurrent LO-IF isolation is better than -25 dB, without including the improvement due to the combiner circuit. The converter circuits exhibit similar instantaneous bandwidth at IF and RF ports of ≫ 7...

  11. Influencing factors on the size uniformity of self-assembled SiGe quantum rings grown by molecular beam epitaxy.

    Cui, J; Lv, Y; Yang, X J; Fan, Y L; Zhong, Z; Jiang, Z M

    2011-03-25

    The size uniformity of self-assembled SiGe quantum rings, which are formed by capping SiGe quantum dots with a thin Si layer, is found to be greatly influenced by the growth temperature and the areal density of SiGe quantum dots. Higher growth temperature benefits the size uniformity of quantum dots, but results in low Ge concentration as well as asymmetric Ge distribution in the dots, which induces the subsequently formed quantum rings to be asymmetric in shape or even broken somewhere in the ridge of rings. Low growth temperature degrades the size uniformity of quantum dots, and thus that of quantum rings. A high areal density results in the expansion and coalescence of neighboring quantum dots to form a chain, rather than quantum rings. Uniform quantum rings with a size dispersion of 4.6% and an areal density of 7.8×10(8) cm(-2) are obtained at the optimized growth temperature of 640°C.

  12. Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

    Vanacore, G. M.; Zani, M.; Tagliaferri, A., E-mail: alberto.tagliaferri@polimi.it [CNISM-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Nicotra, G. [IMM-CNR, Stradale Primosole 50, I-95121 Catania (Italy); Bollani, M. [CNR-IFN, LNESS, Via Anzani 42, I-22100 Como (Italy); Bonera, E.; Montalenti, F.; Picco, A.; Boioli, F. [Dipartimento di Scienza dei Materiali and L-NESS, Università Milano-Bicocca, via Cozzi 53, I-20125 Milano (Italy); Capellini, G. [Department of Sciences at the Università Roma Tre, Via Vasca Navale 79, 00146 Roma (Italy); Isella, G. [CNISM, LNESS, Dipartimento di Fisica, Politecnico di Milano (Polo di Como), Via Anzani 42, I-22100 Como (Italy); Osmond, J. [ICFO–The Institute of Photonic Sciences, Av. Carl Friedrich Gauss, 3, E-08860 Castelldefels (Barcelona) (Spain)

    2015-03-14

    The hetero-epitaxial strain relaxation in nano-scale systems plays a fundamental role in shaping their properties. Here, the elastic and plastic relaxation of self-assembled SiGe islands grown by surface-thermal-diffusion from a local Ge solid source on Si(100) are studied by atomic force and transmission electron microscopies, enabling the simultaneous investigation of the strain relaxation in different dynamical regimes. Islands grown by this technique remain dislocation-free and preserve a structural coherence with the substrate for a base width as large as 350 nm. The results indicate that a delay of the plastic relaxation is promoted by an enhanced Si-Ge intermixing, induced by the surface-thermal-diffusion, which takes place already in the SiGe overlayer before the formation of a critical nucleus. The local entropy of mixing dominates, leading the system toward a thermodynamic equilibrium, where non-dislocated, shallow islands with a low residual stress are energetically stable. These findings elucidate the role of the interface dynamics in modulating the lattice distortion at the nano-scale, and highlight the potential use of our growth strategy to create composition and strain-controlled nano-structures for new-generation devices.

  13. Surface control alloy substrates and methods of manufacture therefor

    Fritzemeier, Leslie G. (Mendon, MA); Li, Qi (Marlborough, MA); Rupich, Martin W. (Framingham, MA); Thompson, Elliott D. (Coventry, RI); Siegal, Edward J. (Malden, MA); Thieme, Cornelis Leo Hans (Westborough, MA); Annavarapu, Suresh (Brookline, MA); Arendt, Paul N. (Los Alamos, NM); Foltyn, Stephen R. (Los Alamos, NM)

    2004-05-04

    Methods and articles for controlling the surface of an alloy substrate for deposition of an epitaxial layer. The invention includes the use of an intermediate layer to stabilize the substrate surface against oxidation for subsequent deposition of an epitaxial layer.

  14. Properties of laser-crystallized polycrystalline SiGe thin films

    Weizman, Moshe

    2008-06-06

    In this thesis, structural, electrical, and optical properties of laser-crystallized polycrystalline Si{sub 1-x}Ge{sub x} thin films with 0SiGe samples that are exposed to a single laser pulse exhibit a ripple structure that evolves into a hillock structure when the samples are irradiated with additional laser pulses. - It is maintained that the main mechanism behind the structure formation is an instability of the propagating solid-liquid interface during solidification. - The study of defects with electron spin resonance showed that laser-crystallized poly-Si{sub 1-x}Ge{sub x} thin films with 0SiGe films was lower and amounted to N{sub s}=7 x 10{sup 17} cm{sup -3}. - Germanium-rich laser-crystallized poly-SiGe thin films exhibited mostly a broad atypical electric dipole spin resonance (EDSR) signal that was accompanied by a nearly temperature-independent electrical conductivity in the range 20-100 K. - Most likely, the origin of the grain boundary conductance is due to dangling-bond defects and not impurities. Metallic-like conductance occurs when the dangling-bond defect density is above a critical value of about N{sub C} {approx} 10{sup 18} cm{sup -3}. - Laser crystallized poly-Si{sub 1-x}Ge{sub x} thin films with x{>=}0.5 exhibit optical absorption behavior that is characteristic for disordered SiGe, implying that the absorption occurs primarily at the grain boundaries. A sub-band-gap absorption peak was found for

  15. Proofs of cluster formation and transitions in liquid metals and alloys

    Filippov, E.S.

    1985-01-01

    Calculational and experimental proofs are presented indicating to existence of clusters in liquid metals and alloys. Systems of liquid alloys both on the base of ferrous metals and non-ferrous metals (Fe-C, Ni-C, Co-C, Fe-Ni, Ni-Mo, Co-Cr, Co-V as well as In-Sn, Bi-Sn, Si-Ge and others) are studied experimentally. It is shown that the general feature of the systems studied is sensitivity of a volume to change in structure, to replacement fcc structure on bcc or to initiation-dissociation of intermetallic compounds AxBy. It is shown that both in pure liquid metals and in their.alloys there are clusters as ordered aggregate of atoms

  16. Structural and electronic properties of Si1−xGex alloy nanowires

    Iori, Federico; Ossicini, Stefano; Rurali, Riccardo

    2014-01-01

    We present first-principles density-functional calculations of Si 1−x Ge x alloy nanowires. We show that given the composition of the alloy, the structural properties of the nanowires can be predicted with great accuracy by means of Vegard's law, linearly interpolating the values of a pure Si and a pure Ge nanowire of the same diameter. The same holds, to some extent, also for electronic properties such as the band-gap. We also assess to what extend the band-gap varies as a function of disorder, i.e., how it changes for different random realization of a given concentration. These results make possible to tailor the desired properties of SiGe alloy nanowires starting directly from the data relative to the pristine wires.

  17. Aging of a complex Al-Cu based alloy modified by microalloying

    Maksimovic, Vesna; Jovanovic, Milan T.; Radmilovic, Velimir; Nikolic, Ruzica

    2003-01-01

    The results of the effect of small addition (0.25 at.%) of Ge on aging kinetics of a complex aluminum alloy containing (wt.%) 5.9% Cu, 0.28% Si and 0.6% (total amount of Fe, Ti, Mn, Zr and V) are presented in this paper. Aging was performed at 190 o C in the interval ranging from 10min to 256h. Hardness measurements, light (LM), transmission electron microscopy (TEM) and differential scanning calorimetry (DSC) were used for microstructural characterization during aging. It was shown that the maximum of hardness in alloy containing Ge was achieved three times faster than in the alloy without Ge. TEM results clearly revealed that the accelerated kinetics should be ascribed to heterogeneously nucleated Si-Ge particles serving as sites for dense and fine distribution of θ' strengthening precipitates. Accelerated kinetics of aging was accompanied by increase in hardness. (Original)

  18. Process heat exchanger for SO3 decomposer fabricated with Ni-based alloys surface modified by SiC film deposition and N ion beam bombardment

    Park, Jae-Won; Kim, Hyung-Jin; Choi, Yong-Woon; Kim, Yong-Wan

    2007-01-01

    In the iodine-sulfur (IS) cycle for the hydrogen production using the high temperature gas-cooled reactor (HTGR), one of the important components is the SO 3 decomposer which generates SO 2 and SO 3 gases under high temperature conditions. Since this environment is extremely corrosive, the materials used for the decomposer should meet excellent mechanical properties at the elevated temperature as well as high corrosion resistance in SO 2 /SO 3 atmospheres. In general, ceramics are protective against the corrosion, but metals exhibit limited corrosion resistance. In this work, the ceramic coating on the metallic substrate was studied. We selected SiC as coating materials and Ni-based alloys as the substrate materials. Since the adhesion between the coated layer and the substrate is most crucial in this application, we attempted to develop Ion Beam Mixing (IBM) technique to produce a highly adherent coated layer. For the fabrication of process heat exchange for SO 3 decomposer, the diffusion bonding at ∼900 .deg. C is employed because this temperature does not affect the mechanical properties of materials

  19. Electrospark deposition of Al2O3–TiB2/Ni composite-phase surface coatings on Cu–Cr–Zr alloy electrodes

    Ping Luo

    2015-03-01

    Full Text Available To improve electrode life during the resistance spot welding of galvanized steel plates, an Al2O3–TiB2 composite coating was synthesized on the surfaces of spot-welding electrodes through an electrospark deposition process. The microstructure, elemental composition, phase structure, and mechanical properties of the coating were characterized using scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction analysis, and microhardness testing. It was found that extensive cracking occurred in the monolithic Al2O3–TiB2 coating and at the coating–electrode interface. When the Al2O3–TiB2 coating was deposited on electrodes precoated with Ni, the number of defects decreased significantly. Further, delamination did not occur, and fewer cracks were formed. The average hardness of the multilayered Al2O3–TiB2/Ni coating was approximately 2200 HV and higher than that of the monolithic Al2O3–TiB2 coating (1100 HV.

  20. Mechanisms of stress generation and relaxation during pulsed laser deposition of epitaxial Fe-Pd magnetic shape memory alloy films on MgO

    Edler, Tobias; Mayr, S G; Buschbeck, Joerg; Mickel, Christine; Faehler, Sebastian

    2008-01-01

    Mechanical stress generation during epitaxial growth of Fe-Pd thin films on MgO from pulsed laser deposition is a key parameter for the suitability in shape memory applications. By employing in situ substrate curvature measurements, we determine the stress states as a function of film thickness and composition. Depending on composition, different stress states are observed during initial film growth, which can be attributed to different misfits. Compressive stress generation by atomic peening is observed in the later stages of growth. Comparison with ex situ x-ray based strain measurements allows integral and local stress to be distinguished and yields heterogeneities of the stress state between coherent and incoherent regions. In combination with cross-sectional TEM measurements the relevant stress relaxation mechanism is identified to be stress-induced martensite formation with (111) twinning

  1. Wear Behavior of Plasma Spray Deposited and Post Heat-Treated Hydroxyapatite (HA)-Based Composite Coating on Titanium Alloy (Ti-6Al-4V) Substrate

    Kumari, Renu; Majumdar, Jyotsna Dutta

    2018-04-01

    The present study concerns a detailed evaluation of wear resistance property of plasma spray deposited composite hydroxyapatite (HA)-based (HA-50 wt pct TiO2 and HA-10 wt pct ZrO2) bioactive coatings developed on Ti-6Al-4V substrate and studying the effect of heat treatment on it. Heat treatment of plasma spray deposited samples has been carried out at 650 °C for 2 hours (for HA-50 wt pct TiO2 coating) and at 750 °C for 2 hours (for HA-10 wt pct ZrO2 coating). There is significant deterioration in wear resistance for HA-50 wt pctTiO2 coating and a marginal deterioration in wear resistance for HA-10 wt pct ZrO2 coating in as-sprayed state (as compared to as-received Ti-6Al-4V) which is, however, improved after heat treatment. The coefficient of friction is marginally increased for both HA-50 wt pct TiO2 and HA-10 wt pct ZrO2 coatings in as-sprayed condition as compared to Ti-6Al-4V substrate. However, coefficient of friction is decreased for both HA-50 wt pct TiO2 and HA-10 wt pct ZrO2 coatings after heat-treated condition as compared to Ti-6Al-4V substrate. The maximum improvement in wear resistance property is, however, observed for HA-10 wt pct ZrO2 sample after heat treatment. The mechanism of wear has been investigated.

  2. Ge nanoclusters in PECVD-deposited glass caused only by heat treatment

    Ou, Haiyan; Rørdam, Troels Peter; Rottwitt, Karsten

    2008-01-01

    This paper reports the formation of Ge nanoclusters in a multi-layer structure consisting of alternating thin films of Ge-doped silica glass and SiGe, deposited by plasma-enhanced chemical vapor deposition (PECVD) and post annealed at 1100 °C in N2 atmosphere. We studied the annealed samples...... embedded with Ge nanoclusters after annealing. These nanoclusters are crystalline and varied in size. There were no clusters in the Ge-doped glass layer. Raman spectra verified the existence of crystalline Ge clusters. The positional shift of the Ge vibrational peak with the change of the focus depth...

  3. Suspended mid-infrared fiber-to-chip grating couplers for SiGe waveguides

    Favreau, Julien; Durantin, Cédric; Fédéli, Jean-Marc; Boutami, Salim; Duan, Guang-Hua

    2016-03-01

    Silicon photonics has taken great importance owing to the applications in optical communications, ranging from short reach to long haul. Originally dedicated to telecom wavelengths, silicon photonics is heading toward circuits handling with a broader spectrum, especially in the short and mid-infrared (MIR) range. This trend is due to potential applications in chemical sensing, spectroscopy and defense in the 2-10 μm range. We previously reported the development of a MIR photonic platform based on buried SiGe/Si waveguide with propagation losses between 1 and 2 dB/cm. However the low index contrast of the platform makes the design of efficient grating couplers very challenging. In order to achieve a high fiber-to-chip efficiency, we propose a novel grating coupler structure, in which the grating is locally suspended in air. The grating has been designed with a FDTD software. To achieve high efficiency, suspended structure thicknesses have been jointly optimized with the grating parameters, namely the fill factor, the period and the grating etch depth. Using the Efficient Global Optimization (EGO) method we obtained a configuration where the fiber-to-waveguide efficiency is above 57 %. Moreover the optical transition between the suspended and the buried SiGe waveguide has been carefully designed by using an Eigenmode Expansion software. Transition efficiency as high as 86 % is achieved.

  4. Gas spectroscopy system with 245 GHz transmitter and receiver in SiGe BiCMOS

    Schmalz, Klaus; Rothbart, Nick; Borngräber, Johannes; Yilmaz, Selahattin Berk; Kissinger, Dietmar; Hübers, Heinz-Wilhelm

    2017-02-01

    The implementation of an integrated mm-wave transmitter (TX) and receiver (RX) in SiGe BiCMOS or CMOS technology offers a path towards a compact and low-cost system for gas spectroscopy. Previously, we have demonstrated TXs and RXs for spectroscopy at 238 -252 GHz and 495 - 497 GHz using external phase-locked loops (PLLs) with signal generators for the reference frequency ramps. Here, we present a more compact system by using two external fractional-N PLLs allowing frequency ramps for the TX and RX, and for TX with superimposed frequency shift keying (FSK) or reference frequency modulation realized by a direct digital synthesizer (DDS) or an arbitrary waveform generator. The 1.9 m folded gas absorption cell, the vacuum pumps, as well as the TX and RX are placed on a portable breadboard with dimensions of 75 cm x 45 cm. The system performance is evaluated by high-resolution absorption spectra of gaseous methanol at 13 Pa for 241 - 242 GHz. The 2f (second harmonic) content of the absorption spectrum of the methanol was obtained by detecting the IF power of RX using a diode power sensor connected to a lock-in amplifier. The reference frequency modulation reveals a higher SNR (signal-noise-ratio) of 98 within 32 s acquisition compared to 66 for FSK. The setup allows for jumping to preselected frequency regions according to the spectral signature thus reducing the acquisition time by up to one order of magnitude.

  5. SiGe HBT cryogenic preamplification for higher bandwidth donor spin read-out

    Curry, Matthew; Carr, Stephen; Ten-Eyck, Greg; Wendt, Joel; Pluym, Tammy; Lilly, Michael; Carroll, Malcolm

    2014-03-01

    Single-shot read-out of a donor spin can be performed using the response of a single-electron-transistor (SET). This technique can produce relatively large changes in current, on the order of 1 (nA), to distinguish between the spin states. Despite the relatively large signal, the read-out time resolution has been limited to approximately 100 (kHz) of bandwidth because of noise. Cryogenic pre-amplification has been shown to extend the response of certain detection circuits to shorter time resolution and thus higher bandwidth. We examine a SiGe HBT circuit configuration for cryogenic preamplification, which has potential advantages over commonly used HEMT configurations. Here we present 4 (K) measurements of a circuit consisting of a Silicon-SET inline with a Heterojunction-Bipolar-Transistor (HBT). We compare the measured bandwidth with and without the HBT inline and find that at higher frequencies the signal-to-noise-ratio (SNR) with the HBT inline exceeds the SNR without the HBT inline. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE, Office of Basic Energy Sciences user facility. The work was supported by the Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  6. Homogeneous SiGe crystal growth in microgravity by the travelling liquidus-zone method

    Kinoshita, K; Arai, Y; Inatomi, Y; Sakata, K; Takayanagi, M; Yoda, S; Miyata, H; Tanaka, R; Sone, T; Yoshikawa, J; Kihara, T; Shibayama, H; Kubota, Y; Shimaoka, T; Warashina, Y

    2011-01-01

    Homogeneous SiGe crystal growth experiments will be performed on board the ISS 'Kibo' using a gradient heating furnace (GHF). A new crystal growth method invented for growing homogeneous mixed crystals named 'travelling liquidus-zone (TLZ) method' is evaluated by the growth of Si 0.5 Ge 0.5 crystals in space. We have already succeeded in growing homogeneous 2mm diameter Si 0.5 Ge 0.5 crystals on the ground but large diameter homogeneous crystals are difficult to be grown due to convection in a melt. In microgravity, larger diameter crystals can be grown with suppressing convection. Radial concentration profiles as well as axial profiles in microgravity grown crystals will be measured and will be compared with our two-dimensional TLZ growth model equation and compositional variation is analyzed. Results are beneficial for growing large diameter mixed crystals by the TLZ method on the ground. Here, we report on the principle of the TLZ method for homogeneous crystal growth, results of preparatory experiments on the ground and plan for microgravity experiments.

  7. LAPAS: A SiGe Front End Prototype for the Upgraded ATLAS LAr Calorimeter

    Dressnandt, N; Rescia, S; Vernon, E

    2009-01-01

    We have designed and fabricated a very low noise preamplifier and shaper to replace the existing ATLAS Liquid Argon readout for use at the Large Hadron Collider upgrade (sLHC). IBM’s 8WL 130nm SiGe process was chosen for it’s radiation tolerance, low noise bipolar NPN devices, wide voltage rand and potential use in other sLHC detector subsystems. Although the requirements for the final design can not be set at this time, the prototype was designed to accommodate a 16 bit dynamic range. This was accomplished by using a single stage, low noise, wide dynamic range preamp followed by a dual range shaper. The low noise of the preamp is made possible by the low base spreading resistance of the Silicon Germanium NPN bipolar transistors. The relatively high voltage rating of the NPN transistors is exploited to allow a gain of 650V/A in the preamplifier which eases the input voltage noise requirement on the shaper. Each shaper stage is designed as a cascaded differential operational amplifier doublet with a common...

  8. LAPAS: A SiGe Front End Prototype for the Upgraded ATLAS LAr

    Rescia, S; Newcomer, F M; Dressnandt, N

    2009-01-01

    We have designed and fabricated a very low noise preamplifier and shaper with a (RC)2 – CR response to replace the existing ATLAS Liquid Argon readout for use at SLHC. IBM’s 8WL 130nm SiGe process was chosen for its radiation tolerance wide voltage range and potential for use in other LHC detector subsystems. The required dynamic range of 15 bits is accomplished by utilization of a single stage, low noise, wide dynamic range preamp connected to a dual range shaper. The low noise of the preamp (~.01nA / √Hz) is achieved by utilizing the process Silicon Germanium bipolar transistors. The relatively high voltage rating of the npn transistors is exploited to allow a gain of 650V/A. With this gain the equivalent input voltage noise requirement on the shaper to about 2.2nV/ √Hz. Each shaper stage is designed as a cascaded differential op amp doublet with a common mode operating point regulated by an internal feedback loop. The shaper outputs are designed to be compatible with the 130nm CMOS ADC being develo...

  9. Thermal boundary resistance at Si/Ge interfaces by molecular dynamics simulation

    Tianzhuo Zhan

    2015-04-01

    Full Text Available In this study, we investigated the temperature dependence and size effect of the thermal boundary resistance at Si/Ge interfaces by non-equilibrium molecular dynamics (MD simulations using the direct method with the Stillinger-Weber potential. The simulations were performed at four temperatures for two simulation cells of different sizes. The resulting thermal boundary resistance decreased with increasing temperature. The thermal boundary resistance was smaller for the large cell than for the small cell. Furthermore, the MD-predicted values were lower than the diffusion mismatch model (DMM-predicted values. The phonon density of states (DOS was calculated for all the cases to examine the underlying nature of the temperature dependence and size effect of thermal boundary resistance. We found that the phonon DOS was modified in the interface regions. The phonon DOS better matched between Si and Ge in the interface region than in the bulk region. Furthermore, in interface Si, the population of low-frequency phonons was found to increase with increasing temperature and cell size. We suggest that the increasing population of low-frequency phonons increased the phonon transmission coefficient at the interface, leading to the temperature dependence and size effect on thermal boundary resistance.

  10. Practice guidelines on the use of esophageal manometry - A GISMAD-SIGE-AIGO medical position statement.

    Savarino, Edoardo; de Bortoli, Nicola; Bellini, Massimo; Galeazzi, Francesca; Ribolsi, Mentore; Salvador, Renato; Savarino, Vincenzo; Penagini, Roberto

    2016-10-01

    Patients with esophageal symptoms potentially associated to esophageal motor disorders such as dysphagia, chest pain, heartburn and regurgitation, represent one of the most frequent reasons for referral to gastroenterological evaluation. The utility of esophageal manometry in clinical practice is: (1) to accurately define esophageal motor function, (2) to identify abnormal motor function, and (3) to establish a treatment plan based on motor abnormalities. With this in mind, in the last decade, investigations and technical advances, with the introduction of high-resolution esophageal manometry, have enhanced our understanding and management of esophageal motility disorders. The following recommendations were developed to assist physicians in the appropriate use of esophageal manometry in modern patient care. They were discussed and approved after a comprehensive review of the medical literature pertaining to manometric techniques and their recent application. This position statement created under the auspices of the Gruppo Italiano di Studio per la Motilità dell'Apparato Digerente (GISMAD), Società Italiana di Gastroenterologia ed Endoscopia Digestiva (SIGE) and Associazione Italiana Gastroenterologi ed Endoscopisti Digestivi Ospedalieri (AIGO) is intended to help clinicians in applying manometric studies in the most fruitful manner within the context of their patients with esophageal symptoms. Copyright © 2016 Editrice Gastroenterologica Italiana S.r.l. Published by Elsevier Ltd. All rights reserved.

  11. Textural and morphological studies on zinc-iron alloy electrodeposits

    Zinc-iron alloy electrodeposits have industrial significance, since they provide better corrosion resistance and with improved mechanical properties when compared to pure zinc coatings. This is due to the unique phase structure of the alloy formed. But this deposition belongs to anomalous deposition, where the ...

  12. Interdiffusion between Co3O4 coating and the oxide scale of Fe-22Cr alloy

    Hansson, Anette Nørgaard; Friehling, Peter B.; Linderoth, Søren

    2002-01-01

    on Fe-Cr alloys. Coatings of Co3O4 were deposited on a Fe-22Cr alloy by plasma spraying and spray-painting. As-deposited samples were oxidised in air containing 1% H2O at 900C for various exposure time. During exposure the Fe-22Cr alloy forms an oxide scale, which reacts with the coating. The effects...

  13. YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} coated conductor deposited onto non-magnetic ternary alloy NiCrW RABiTS tape by in situ pulsed laser deposition

    Tomov, R I; Kursumovic, A; Majoros, M; Glowacki, B A; Evetts, J E; Tuissi, A; Villa, E; Zamboni, M; Sun, Y; Toenies, S; Weber, H W

    2003-01-01

    Pulsed laser deposition of YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (YBCO)/buffer (Y{sub 2}O{sub 3}, YSZ, CeO{sub 2}) heterostructures have been performed in situ onto recently developed non-magnetic oxygenation resistant NiCrW tape. The influence of the critical processing parameters on texture development are investigated and the issues involved in NiO formation and relation to the substrate surface quality are discussed. The roles of Ni poisoning YBCO as well as local cation disorder are considered as possible current limiting factors. X-ray diffraction has been used for macro-texture evaluation. Both buffers and YBCO layers show good biaxial alignment with {omega} and {phi} scans having best YBCO FWHM values of 4.0 deg. and 6.5 deg. respectively. A comparison is made with results achieved on industrial Ni{sub 50}Fe{sub 50} tape. The film morphology has been characterized using atomic force microscopy and scanning electron microscopy. The cation disorder has been studied by Raman spectroscopy. Critical temperatures of 90 K ({delta}T{sub c}=5 K) have been measured. Direct transport as well as magnetic measurements shows the critical current density J{sub c} is 0.2 MA/cm{sup 2} in self-field at liquid nitrogen temperatures.

  14. Structure of MeCrAlY + AlSi coatings deposited by Arc-PVD method on CMSX4 single crystal alloy

    Swadzba, L.; Hetmanczyk, M.; Mendala, B.; Saunders, S.R.J.

    2002-01-01

    Investigations of depositing high temperature resistant coatings on the Ni base superalloys by Arc-PVD method using exothermic reaction processes between Ni and Al with NiAl intermetallic formation are presented in the article. By the diffusion heating at 1050 o C in vacuum, NiAl diffusion coating containing 21% at. Al and 50 μm thick were obtained. In the next stage coatings with more complex chemical composition - MeCrAlY were formed. The MeCrAlY coatings were made from two targets. Good correlation between the chemical composition of the targets and a uniform distribution of elements in the coatings was shown. Then the surface was also covered with aluminium by the Arc-PVD method . In the vacuum chamber of the equipment a synthesis reaction between NiCoCrAlY and Al with the formation of NiAl intermetallics of high Co, Cr, Y content was initiated. The final heat treatment of coatings was conducted in vacuum at 1323 K. Strong segregation of yttrium into the oxide scale in the specimens heated in the air was shown. It was possible to form NiAl and intermetallics phase coatings modified by Co, Cr and Y by the Arc-PVD method. The coatings were formed on a single crystal CMSX-4. The structure, morphology and phase composition of coatings was carried out. (author)

  15. Electrodeposition of platinum metals and alloys from chloride melts

    Saltykova N.A.

    2003-01-01

    Full Text Available The structure of platinum metals and their alloys deposited by the electrolysis of chloride melts have been investigated. The cathodic deposits were both in the form of compact layers and dendrites. All the alloys of platinum metals obtained are solid solutions in the whole range of composition. Depending on the experimental conditions the layers had columnar, stratum and spiral (dissipative structures. The stratum and dissipative structures were observed in the case of alloys only.

  16. Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations using non-uniform finger spacing

    Chen Liang; Zhang Wan-Rong; Jin Dong-Yue; Shen Pei; Xie Hong-Yun; Ding Chun-Bao; Xiao Ying; Sun Bo-Tao; Wang Ren-Qing

    2011-01-01

    A method of non-uniform finger spacing is proposed to enhance thermal stability of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations. Temperature distribution on the emitter fingers of a multi-finger SiGe heterojunction bipolar transistor is studied using a numerical electro-thermal model. The results show that the SiGe heterojunction bipolar transistor with non-uniform finger spacing has a small temperature difference between fingers compared with a traditional uniform finger spacing heterojunction bipolar transistor at the same power dissipation. What is most important is that the ability to improve temperature non-uniformity is not weakened as power dissipation increases. So the method of non-uniform finger spacing is very effective in enhancing the thermal stability and the power handing capability of power device. Experimental results verify our conclusions. (interdisciplinary physics and related areas of science and technology)

  17. The effects of hot carrier and swift heavy ion irradiation on electrical characteristics of advanced 200 GHz SiGe HBTs

    Vinayakprasanna, N. H.; Praveen, K. C.; Prakash, A. P. Gnana, E-mail: gnanaprakash@physics.uni-mysore.ac.in [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore-570006 (India); Cressler, J. D. [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta-30332, GA (United States)

    2016-05-23

    The 200 GHz SiGe HBTs were irradiated with 80 MeV Carbon ions up to a total dose of 100 Mrad to understand the degradation in electrical characteristics. The degradation in the electrical characteristics of SiGe HBTs was also studied by mixed mode electrical stress up to 10,000 s. The electrical characteristics were measured before and after every total dose and after fixed stress time. The normalized peak h{sub FE} of the stressed and irradiated SiGe HBTs are compared to estimate the equivalent stress time for a particular total dose. These correlations are drawn for the first time and the results will establish a systematic relation between stress time and total dose.

  18. The effects of hot carrier and swift heavy ion irradiation on electrical characteristics of advanced 200 GHz SiGe HBTs

    Vinayakprasanna, N. H.; Praveen, K. C.; Prakash, A. P. Gnana; Cressler, J. D.

    2016-01-01

    The 200 GHz SiGe HBTs were irradiated with 80 MeV Carbon ions up to a total dose of 100 Mrad to understand the degradation in electrical characteristics. The degradation in the electrical characteristics of SiGe HBTs was also studied by mixed mode electrical stress up to 10,000 s. The electrical characteristics were measured before and after every total dose and after fixed stress time. The normalized peak h_F_E of the stressed and irradiated SiGe HBTs are compared to estimate the equivalent stress time for a particular total dose. These correlations are drawn for the first time and the results will establish a systematic relation between stress time and total dose.

  19. VANADIUM ALLOYS

    Smith, K.F.; Van Thyne, R.J.

    1959-05-12

    This patent deals with vanadium based ternary alloys useful as fuel element jackets. According to the invention the ternary vanadium alloys, prepared in an arc furnace, contain from 2.5 to 15% by weight titanium and from 0.5 to 10% by weight niobium. Characteristics of these alloys are good thermal conductivity, low neutron capture cross section, good corrosion resistance, good welding and fabricating properties, low expansion coefficient, and high strength.

  20. Characterization and structure of precipitates in 6xxx Aluminium Alloys

    Holmestad, Randi; Bjørge, Ruben; Ehlers, Flemming J H; Torsæter, Malin; Marioara, Calin D; Andersen, Sigmund J

    2012-01-01

    Solute atom nanoscale precipitates are responsible for the favourable mechanical properties of heat treatable aluminium alloys such as Al-Mg-Si (6xxx). The shape, structure and strengthening properties of age-hardening precipitates depend on alloy composition and thermo-mechanical history. We seek an improved understanding of the physics related to nucleation and precipitation on the atomistic level in these alloys. Once these mechanisms are sufficiently well described and understood, the hope is that 'alloy design' simulations can assist tailoring of materials with desired properties. In pure Al-Mg-Si we have determined the structure of nearly all the known metastable precipitate phases, by combining advanced TEM techniques (such as high resolution TEM and nano-beam diffraction) with atom probe tomography and density functional theory. We are now studying effects of additions /substitutions of Cu, Ag and/or Ge that promote formation of more disordered precipitates, employing aberration corrected high angle annular dark field scanning TEM. We find that all metastable precipitates contain variations of a widely spaced 'Si/Ge network'. In spite of disorder or defects, this network is surprisingly well ordered, with hexagonal projected sub-cell dimensions a = b ≅ 0.4 nm and c (along the fully coherent precipitate main growth direction) equal to 0.405 nm or a multiple of it.

  1. Comparative study of the luminescence of structures with Ge nanocrystals formed by dry and wet oxidation of SiGe films

    RodrIguez, A; Ortiz, M I; Sangrador, J; RodrIguez, T; Avella, M; Prieto, A C; Torres, A; Jimenez, J; Kling, A; Ballesteros, C

    2007-01-01

    The luminescence emission of structures containing Ge nanocrystals embedded in a dielectric matrix obtained by dry and wet oxidation of polycrystalline SiGe layers has been studied as a function of the oxidation time and initial SiGe layer thickness. A clear relationship between the intensity of the luminescence, the structure of the sample, the formation of Ge nanocrystals and the oxidation process parameters that allows us to select the appropriate process conditions to get the most efficient emission has been established. The evolution of the composition and thickness of the growing oxides and the remaining SiGe layer during the oxidation processes has been characterized using Raman spectroscopy, x-ray diffraction, Fourier-transform infrared spectroscopy, Rutherford backscattering spectrometry and transmission electron microscopy. For dry oxidation, the luminescence appears suddenly, regardless of the initial SiGe layer thickness, when all the Si of the SiGe has been oxidized and the remaining layer of the segregated Ge starts to be oxidized forming Ge nanocrystals. Luminescence is observed as long as Ge nanocrystals are present. For wet oxidation, the luminescence appears from the first stages of the oxidation, and is related to the formation of Ge-rich nanoclusters trapped in the mixed (Si and Ge) growing oxide. A sharp increase of the luminescence intensity for long oxidation times is also observed, due to the formation of Ge nanocrystals by the oxidation of the layer of segregated Ge. For both processes the luminescence is quenched when the oxidation time is long enough to cause the full oxidation of the Ge nanocrystals. The intensity of the luminescence in the dry oxidized samples is about ten times higher than in the wet oxidized ones for equal initial thickness of the SiGe layer

  2. Additive Manufacturing of Metastable Beta Titanium Alloys

    Yannetta, Christopher J.

    Additive manufacturing processes of many alloys are known to develop texture during the deposition process due to the rapid reheating and the directionality of the dissipation of heat. Titanium alloys and with respect to this study beta titanium alloys are especially susceptible to these effects. This work examines Ti-20wt%V and Ti-12wt%Mo deposited under normal additive manufacturing process parameters to examine the texture of these beta-stabilized alloys. Both microstructures contained columnar prior beta grains 1-2 mm in length beginning at the substrate with no visible equiaxed grains. This microstructure remained constant in the vanadium system throughout the build. The microstructure of the alloy containing molybdenum changed from a columnar to an equiaxed structure as the build height increased. Eighteen additional samples of the Ti-Mo system were created under different processing parameters to identify what role laser power and travel speed have on the microstructure. There appears to be a correlation in alpha lath size and power density. The two binary alloys were again deposited under the same conditions with the addition of 0.5wt% boron to investigate the effects an insoluble interstitial alloying element would have on the microstructure. The size of the prior beta grains in these two alloys were reduced with the addition of boron by approximately 50 (V) and 100 (Mo) times.

  3. Alternative Sigma Factors SigF, SigE, and SigG Are Essential for Sporulation in Clostridium botulinum ATCC 3502

    Kirk, David G.; Zhang, Zhen; Korkeala, Hannu; Lindström, Miia

    2014-01-01

    Clostridium botulinum produces heat-resistant endospores that may germinate and outgrow into neurotoxic cultures in foods. Sporulation is regulated by the transcription factor Spo0A and the alternative sigma factors SigF, SigE, SigG, and SigK in most spore formers studied to date. We constructed mutants of sigF, sigE, and sigG in C. botulinum ATCC 3502 and used quantitative reverse transcriptase PCR and electron microscopy to assess their expression of the sporulation pathway on transcription...

  4. A SiGe High Gain and Highly Linear F-Band Single-Balanced Subharmonic Mixer

    Seyedhosseinzadeh, Neda; Nabavi, Abdolreza; Carpenter, Sona; He, Zhongxia Simon; Bao, Mingquan; Zirath, Herbert

    2017-01-01

    A compact, broadband, high gain, second-order active down-converter subharmonic mixer is demonstrated using a 130-nm SiGe BiCMOS technology. The mixer adopts a bottom-LO Gilbert topology, on-chip RF and LO baluns and two emitter-follower buffers to realize a high gain wideband operation in both RF and IF frequencies. The measured performance exhibits a flat conversion gain (CG) of about 11 dB from 90 to 130 GHz with an average LO power of +3 dBm and high 2LO-RF isolation better than 60 dB. Th...

  5. Electrospark deposition for die repair

    J. Tušek

    2012-01-01

    Full Text Available The electrospark deposition is a process for surfacing of hard metal alloys, e.g. carbides and stellites, on the surfaces of new or old machine elements. In this process, a high current is conducted through an oscillating electrode and a substrate for a very short period of time. In the paper, the process is described and the thickness of deposited layer, chemical composition, dilution rate and the layer roughness are determined.

  6. Effect of Alloy 625 Buffer Layer on Hardfacing of Modified 9Cr-1Mo Steel Using Nickel Base Hardfacing Alloy

    Chakraborty, Gopa; Das, C. R.; Albert, S. K.; Bhaduri, A. K.; Murugesan, S.; Dasgupta, Arup

    2016-04-01

    Dashpot piston, made up of modified 9Cr-1Mo steel, is a part of diverse safety rod used for safe shutdown of a nuclear reactor. This component was hardfaced using nickel base AWS ER NiCr-B alloy and extensive cracking was experienced during direct deposition of this alloy on dashpot piston. Cracking reduced considerably and the component was successfully hardfaced by application of Inconel 625 as buffer layer prior to hardface deposition. Hence, a separate study was undertaken to investigate the role of buffer layer in reducing the cracking and on the microstructure of the hardfaced deposit. Results indicate that in the direct deposition of hardfacing alloy on modified 9Cr-1Mo steel, both heat-affected zone (HAZ) formed and the deposit layer are hard making the thickness of the hard layer formed equal to combined thickness of both HAZ and deposit. This hard layer is unable to absorb thermal stresses resulting in the cracking of the deposit. By providing a buffer layer of Alloy 625 followed by a post-weld heat treatment, HAZ formed in the modified 9Cr-1Mo steel is effectively tempered, and HAZ formed during the subsequent deposition of the hardfacing alloy over the Alloy 625 buffer layer is almost completely confined to Alloy 625, which does not harden. This reduces the cracking susceptibility of the deposit. Further, unlike in the case of direct deposition on modified 9Cr-1Mo steel, dilution of the deposit by Ni-base buffer layer does not alter the hardness of the deposit and desired hardness on the deposit surface could be achieved even with lower thickness of the deposit. This gives an option for reducing the recommended thickness of the deposit, which can also reduce the risk of cracking.

  7. Nonswelling alloy

    Harkness, S.D.

    1975-12-23

    An aluminum alloy containing one weight percent copper has been found to be resistant to void formation and thus is useful in all nuclear applications which currently use aluminum or other aluminum alloys in reactor positions which are subjected to high neutron doses.

  8. Nonswelling alloy

    Harkness, S.D.

    1975-01-01

    An aluminum alloy containing one weight percent copper has been found to be resistant to void formation and thus is useful in all nuclear applications which currently use aluminum or other aluminum alloys in reactor positions which are subjected to high neutron doses

  9. The properties of Ge quantum rings deposited by pulsed laser deposition.

    Ma, Xiying

    2010-07-01

    SiGe ring-shape nanostructures have attracted much research interest because of the interesting morphology, mechanical, and electromagnetic properties. In this paper, we present the planar Ge nanorings with well-defined sharp edges self-assembled on Si (100) matrix prepared with pulsed laser deposition (PLD) in the present of Ar gas. The transforming mechanism of the droplets is discussed, which a dynamic deformation model has been developed to simulate the self-transforming process of the droplets. The rings were found to be formed in two steps: from droplets to cones and from cones to rings via an elastic self-deforming process, which were likely to be driven by the lateral strain of Ge/Si layers and the surface tension.

  10. Structural and electronic properties of Si{sub 1–x}Ge{sub x} alloy nanowires

    Iori, Federico [Dipartimento di Scienze e Metodi dell' Ingegneria, Centro Interdipartimentale Intermech and En and tech, Università di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42122 Reggio Emilia (Italy); European Theoretical Spectroscopy Facility (ETSF) and Institut de Ciència de Materials de Barcelona (ICMAB–CSIC), Campus de Bellaterra, 08193 Bellaterra, Barcelona (Spain); Ossicini, Stefano [Dipartimento di Scienze e Metodi dell' Ingegneria, Centro Interdipartimentale Intermech and En and tech, Università di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42122 Reggio Emilia (Italy); “Centro S3”, CNR-Istituto di Nanoscienze, Via Campi 213/A, 41125 Modena (Italy); Rurali, Riccardo, E-mail: rrurali@icmab.es [Institut de Ciència de Materials de Barcelona (ICMAB–CSIC), Campus de Bellaterra, 08193 Bellaterra, Barcelona (Spain)

    2014-10-21

    We present first-principles density-functional calculations of Si{sub 1–x}Ge{sub x} alloy nanowires. We show that given the composition of the alloy, the structural properties of the nanowires can be predicted with great accuracy by means of Vegard's law, linearly interpolating the values of a pure Si and a pure Ge nanowire of the same diameter. The same holds, to some extent, also for electronic properties such as the band-gap. We also assess to what extend the band-gap varies as a function of disorder, i.e., how it changes for different random realization of a given concentration. These results make possible to tailor the desired properties of SiGe alloy nanowires starting directly from the data relative to the pristine wires.

  11. Atomic Layer Deposition of Al2O3-Ga2O3 Alloy Coatings for Li[Ni0.5Mn0.3Co0.2]O2 Cathode to Improve Rate Performance in Li-Ion Battery.

    Laskar, Masihhur R; Jackson, David H K; Guan, Yingxin; Xu, Shenzhen; Fang, Shuyu; Dreibelbis, Mark; Mahanthappa, Mahesh K; Morgan, Dane; Hamers, Robert J; Kuech, Thomas F

    2016-04-27

    Metal oxide coatings can improve the electrochemical stability of cathodes and hence, their cycle-life in rechargeable batteries. However, such coatings often impose an additional electrical and ionic transport resistance to cathode surfaces leading to poor charge-discharge capacity at high C-rates. Here, a mixed oxide (Al2O3)1-x(Ga2O3)x alloy coating, prepared via atomic layer deposition (ALD), on Li[Ni0.5Mn0.3Co0.2]O2 (NMC) cathodes is developed that has increased electron conductivity and demonstrated an improved rate performance in comparison to uncoated NMC. A "co-pulsing" ALD technique was used which allows intimate and controlled ternary mixing of deposited film to obtain nanometer-thick mixed oxide coatings. Co-pulsing allows for independent control over film composition and thickness in contrast to separate sequential pulsing of the metal sources. (Al2O3)1-x(Ga2O3)x alloy coatings were demonstrated to improve the cycle life of the battery. Cycle tests show that increasing Al-content in alloy coatings increases capacity retention; whereas a mixture of compositions near (Al2O3)0.5(Ga2O3)0.5 was found to produce the optimal rate performance.

  12. Understanding and optimization of InN and high indium containing InGaN alloys by metal organic chemical vapor deposition

    Tuna, Oecal

    2013-01-01

    Among the III-nitride semiconductors (Ga,Al,In)N, InN is the most attractive one due to having the narrowest bandgap of 0.64 eV. The revision in the bandgap of InN makes the InGaN more important since one can cover the whole solar spectrum by only changing In composition in an InGaN layer. The comparison of quality of InN and InGaN layers grown using a metal organic chemical vapor deposition (MOCVD) and a molecular beam epitaxy (MBE) methods indicate that growth with MOCVD is the more challenging, again due to the high dissociation temperature of NH 3 relative to the low decomposition temperature of InN (560-570 C). However, there is significant interest in developing an MOCVD process for InN and InGaN growth since MOCVD technology is the technology currently in use for commercial fabrication of group III nitride thin films. This thesis is therefore focused on a study of MOCVD growth of n- and p-type InN and In-rich InGaN films with the goal of providing new information on the influence of growth conditions on the film properties. Initially, a detailed investigation of MOCVD of InN is given. It is shown that MOCVD growth parameters (growth temperature and V/III ratio) have impacts on the layer properties such as In droplet formation on the surface as well as on its electrical and optical properties. PAS is employed for point defect analyzation. It is shown that In vacancies isolated by nitrogen vacancies are the dominant vacancy-type positron traps in InN. A decrease in the N vacancy concentration in InN is observed as a result of the growth temperature increase from 500 to 550 C. This is an indication of a reduction of N vacancy concentration by enhancing NH 3 dissociation at high growth temperature. Results obtained from optical techniques (Raman and PL) are used to estimate the free carrier concentrations in InN. Electrical characterizations are also carried out using Hall measurements. Carrier concentration values obtained by these three techniques revealed a

  13. Anodic oxidation of Ta/Fe alloys

    Mato, S.; Alcala, G.; Thompson, G.E.; Skeldon, P.; Shimizu, K.; Habazaki, H.; Quance, T.; Graham, M.J.; Masheder, D.

    2003-01-01

    The behaviour of iron during anodizing of sputter-deposited Ta/Fe alloys in ammonium pentaborate electrolyte has been examined by transmission electron microscopy, Rutherford backscattering spectroscopy, glow discharge optical emission spectroscopy and X-ray photoelectron spectroscopy. Anodic films on Ta/1.5 at.% Fe, Ta/3 at.% Fe and Ta/7 at.% Fe alloys are amorphous and featureless and develop at high current efficiency with respective formation ratios of 1.67, 1.60 and 1.55 nm V -1 . Anodic oxidation of the alloys proceeds without significant enrichment of iron in the alloy in the vicinity of the alloy/film interface and without oxygen generation during film growth, unlike the behaviour of Al/Fe alloys containing similar concentrations of iron. The higher migration rate of iron species relative to that of tantalum ions leads to the formation of an outer iron-rich layer at the film surface

  14. Understanding and optimization of InN and high indium containing InGaN alloys by metal organic chemical vapor deposition

    Tuna, Oecal

    2013-07-18

    Among the III-nitride semiconductors (Ga,Al,In)N, InN is the most attractive one due to having the narrowest bandgap of 0.64 eV. The revision in the bandgap of InN makes the InGaN more important since one can cover the whole solar spectrum by only changing In composition in an InGaN layer. The comparison of quality of InN and InGaN layers grown using a metal organic chemical vapor deposition (MOCVD) and a molecular beam epitaxy (MBE) methods indicate that growth with MOCVD is the more challenging, again due to the high dissociation temperature of NH{sub 3} relative to the low decomposition temperature of InN (560-570 C). However, there is significant interest in developing an MOCVD process for InN and InGaN growth since MOCVD technology is the technology currently in use for commercial fabrication of group III nitride thin films. This thesis is therefore focused on a study of MOCVD growth of n- and p-type InN and In-rich InGaN films with the goal of providing new information on the influence of growth conditions on the film properties. Initially, a detailed investigation of MOCVD of InN is given. It is shown that MOCVD growth parameters (growth temperature and V/III ratio) have impacts on the layer properties such as In droplet formation on the surface as well as on its electrical and optical properties. PAS is employed for point defect analyzation. It is shown that In vacancies isolated by nitrogen vacancies are the dominant vacancy-type positron traps in InN. A decrease in the N vacancy concentration in InN is observed as a result of the growth temperature increase from 500 to 550 C. This is an indication of a reduction of N vacancy concentration by enhancing NH{sub 3} dissociation at high growth temperature. Results obtained from optical techniques (Raman and PL) are used to estimate the free carrier concentrations in InN. Electrical characterizations are also carried out using Hall measurements. Carrier concentration values obtained by these three techniques

  15. Flexible Low-power SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout

    England, Troy; Lilly, Michael; Curry, Matthew; Carr, Stephen; Carroll, Malcolm

    Fast, low-power quantum state readout is one of many challenges facing quantum information processing. Single electron transistors (SETs) are potentially fast, sensitive detectors for performing spin readout of electrons bound to Si:P donors. From a circuit perspective, however, their output impedance and nonlinear conductance are ill suited to drive the parasitic capacitance of coaxial conductors used in cryogenic environments, necessitating a cryogenic amplification stage. We will introduce two new amplifier topologies that provide excellent gain versus power tradeoffs using silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). The AC HBT allows in-situ adjustment of power dissipation during an experiment and can provide gain in the millikelvin temperature regime while dissipating less than 500 nW. The AC Current Amplifier maximizes gain at nearly 800 A/A. We will also show results of using these amplifiers with SETs at 4 K. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000. Flexible Low-power SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout.

  16. Band structure of Si/Ge core-shell nanowires along the [110] direction modulated by external uniaxial strain

    Peng Xihong; Tang Fu; Logan, Paul

    2011-01-01

    Strain modulated electronic properties of Si/Ge core-shell nanowires along the [110] direction were reported, on the basis of first principles density-functional theory calculations. In particular, the energy dispersion relationship of the conduction/valence band was explored in detail. At the Γ point, the energy levels of both bands are significantly altered by applied uniaxial strain, which results in an evident change of the band gap. In contrast, for the K vectors far away from Γ, the variation of the conduction/valence band with strain is much reduced. In addition, with a sufficient tensile strain (∼1%), the valence band edge shifts away from Γ, which indicates that the band gap of the Si/Ge core-shell nanowires experiences a transition from direct to indirect. Our studies further showed that effective masses of charge carriers can also be tuned using the external uniaxial strain. The effective mass of the hole increases dramatically with tensile strain, while strain shows a minimal effect on tuning the effective mass of the electron. Finally, the relation between strain and the conduction/valence band edge is discussed thoroughly in terms of site-projected wavefunction characters.

  17. Systematic corrosion investigation of various Cu-Sn alloys electrodeposited on mild steel in acidic solution: Dependence of alloy composition

    Suerme, Yavuz, E-mail: ysurme@nigde.edu.t [Department of Chemistry, Faculty of Science and Art, Nigde University, 51200 Nigde (Turkey); Guerten, A. Ali [Department of Chemistry, Faculty of Science and Art, Osmaniye Korkut Ata University, 80000 Osmaniye (Turkey); Bayol, Emel; Ersoy, Ersay [Department of Chemistry, Faculty of Science and Art, Nigde University, 51200 Nigde (Turkey)

    2009-10-19

    Copper-tin alloy films were galvanostatically electrodeposited on the mild steel (MS) by combining the different amount of Cu and Sn electrolytes at a constant temperature (55 deg. C) and pH (3.5). Alloy films were characterized by using the energy dispersive X-ray analysis (EDX), scanning electron microscopy (SEM), X-ray diffraction (XRD) and micrographing techniques. Corrosion behaviours were evaluated with electrochemical impedance spectrometry (EIS) and electrochemical polarization measurements. Time gradient of electrolysis process was adjusted to obtain same thickness of investigated alloys on MS. The systematic corrosion investigation of various Cu{sub x}-Sn{sub 100-x} (x = 0-100) alloy depositions on MS substrate were carried out in 0.1 M sulphuric acid medium. Results indicate that the corrosion resistance of the alloy coatings depended on the alloy composition, and the corrosion resistance increased at Cu-Sn alloy deposits in proportion to Sn ratio.

  18. Self-Passivation by Fluorine Plasma Treatment and Low-Temperature Annealing in SiGe Nano wires for Biochemical Sensors

    Chang, K.; Chen, C.; Kuo, P.; Chen, Y.; Chang, T.; Lai, C.; Whang, A. J.; Lai, Y.; Chen, H.; Hsieh, I.

    2014-01-01

    Nano wires are widely used as highly sensitive sensors for electrical detection of biological and chemical species. Modifying the band structure of strained-Si metal-oxide-semiconductor field-effect transistors by applying the in-plane tensile strain reportedly improves electron and hole mobility. The oxidation-induced Ge condensation increases the Ge fraction in a SiGe-on-insulator (SGOI) and substantially increases hole mobility. However, oxidation increases the number of surface states, resulting in hole mobility degradation. In this work, 3-aminopropyltrimethoxysilane (APTMS) was used as a biochemical reagent. The hydroxyl molecule on the oxide surface was replaced by the methoxy groups of the APTMS molecule. We proposed a surface plasma treatment to improve the electrical properties of SiGe nano wires. Fluorine plasma treatment can result in enhanced rates of thermal oxidation and speed up the formation of a self-passivation oxide layer. Like a capping oxide layer, the self-passivation oxide layer reduces the rate of follow-up oxidation. Pre oxidation treatment also improved the sensitivity of SiGe nano wires because the Si-F binding was held at a more stable interface state compared to bare nano wire on the SiGe surface. Additionally, the sensitivity can be further improved by either the N 2 plasma posttreatment or the low-temperature post annealing due to the suppression of out diffusion of Ge and F atoms from the SiGe nano wire surface.

  19. Measurement of low-frequency base and collector current noise and coherence in SiGe heterojunction bipolar transistors using transimpedance amplifiers

    Bruce, S.P.O.; Vandamme, L.K.J.; Rydberg, A.

    1999-01-01

    Transimpedance amplifiers have been used for direct study of current noise in silicon germanium (SiGe) heterojunction bipolar transistors (HBT's) at different biasing conditions. This has facilitated a wider range of resistances in the measurement circuit around the transistor than is possible when

  20. Electrical Resistance Alloys and Low-Expansion Alloys

    Kjer, Torben

    1996-01-01

    The article gives an overview of electrical resistance alloys and alloys with low thermal expansion. The electrical resistance alloys comprise resistance alloys, heating alloys and thermostat alloys. The low expansion alloys comprise alloys with very low expansion coefficients, alloys with very low...... thermoelastic coefficients and age hardenable low expansion alloys....

  1. Oxidation kinetics of Si and SiGe by dry rapid thermal oxidation, in-situ steam generation oxidation and dry furnace oxidation

    Rozé, Fabien; Gourhant, Olivier; Blanquet, Elisabeth; Bertin, François; Juhel, Marc; Abbate, Francesco; Pribat, Clément; Duru, Romain

    2017-06-01

    The fabrication of ultrathin compressively strained SiGe-On-Insulator layers by the condensation technique is likely a key milestone towards low-power and high performances FD-SOI logic devices. However, the SiGe condensation technique still requires challenges to be solved for an optimized use in an industrial environment. SiGe oxidation kinetics, upon which the condensation technique is founded, has still not reached a consensus in spite of various studies which gave insights into the matter. This paper aims to bridge the gaps between these studies by covering various oxidation processes relevant to today's technological needs with a new and quantitative analysis methodology. We thus address oxidation kinetics of SiGe with three Ge concentrations (0%, 10%, and 30%) by means of dry rapid thermal oxidation, in-situ steam generation oxidation, and dry furnace oxidation. Oxide thicknesses in the 50 Å to 150 Å range grown with oxidation temperatures between 850 and 1100 °C were targeted. The present work shows first that for all investigated processes, oxidation follows a parabolic regime even for thin oxides, which indicates a diffusion-limited oxidation regime. We also observe that, for all investigated processes, the SiGe oxidation rate is systematically higher than that of Si. The amplitude of the variation of oxidation kinetics of SiGe with respect to Si is found to be strongly dependent on the process type. Second, a new quantitative analysis methodology of oxidation kinetics is introduced. This methodology allows us to highlight the dependence of oxidation kinetics on the Ge concentration at the oxidation interface, which is modulated by the pile-up mechanism. Our results show that the oxidation rate increases with the Ge concentration at the oxidation interface.

  2. Microwave plasma synthesis of Si/Ge and Si/WSi2 nanoparticles for thermoelectric applications

    Petermann, Nils; Schneider, Tom; Stötzel, Julia; Stein, Niklas; Weise, Claudia; Wlokas, Irenäus; Schierning, Gabi; Wiggers, Hartmut

    2015-08-01

    The utilization of microwave-based plasma systems enables a contamination-free synthesis of highly specific nanoparticles in the gas phase. A reactor setup allowing stable, long-term operation was developed with the support of computational fluid dynamics. This paper highlights the prospects of gas-phase plasma synthesis to produce specific materials for bulk thermoelectrics. Taking advantage of specific plasma reactor properties such as Coulomb repulsion in combination with gas temperatures considerably higher than 1000 K, spherical and non-aggregated nanoparticles of multiple compositions are accessible. Different strategies towards various nanostructured composites and alloys are discussed. It is shown that, based on doped silicon/germanium alloys and composites, thermoelectric materials with zT values up to almost unity can be synthesized in one step. First experimental results concerning silicon/tungsten silicide thermoelectrics applying the nanoparticle-in-alloy idea are presented indicating that this concept might work. However, it is found that tungsten silicides show a surprising sinter activity more than 1000 K below their melting temperature.

  3. Simulation of thermal stress and buckling instability in Si/Ge and Ge/Si core/shell nanowires.

    Das, Suvankar; Moitra, Amitava; Bhattacharya, Mishreyee; Dutta, Amlan

    2015-01-01

    The present study employs the method of atomistic simulation to estimate the thermal stress experienced by Si/Ge and Ge/Si, ultrathin, core/shell nanowires with fixed ends. The underlying technique involves the computation of Young's modulus and the linear coefficient of thermal expansion through separate simulations. These two material parameters are combined to obtain the thermal stress on the nanowires. In addition, the thermally induced stress is perceived in the context of buckling instability. The analysis provides a trade-off between the geometrical and operational parameters of the nanostructures. The proposed methodology can be extended to other materials and structures and helps with the prediction of the conditions under which a nanowire-based device might possibly fail due to elastic instability.

  4. Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout

    Sun Ya-Bin; Li Xiao-Jin; Zhang Jin-Zhong; Shi Yan-Ling

    2017-01-01

    In this paper, we present an improved high-frequency equivalent circuit for SiGe heterojunction bipolar transistors (HBTs) with a CBE layout, where we consider the distributed effects along the base region. The actual device structure is divided into three parts: a link base region under a spacer oxide, an intrinsic transistor region under the emitter window, and an extrinsic base region. Each region is considered as a two-port network, and is composed of a distributed resistance and capacitance. We solve the admittance parameters by solving the transmission-line equation. Then, we obtain the small-signal equivalent circuit depending on the reasonable approximations. Unlike previous compact models, in our proposed model, we introduce an additional internal base node, and the intrinsic base resistance is shifted into this internal base node, which can theoretically explain the anomalous change in the intrinsic bias-dependent collector resistance in the conventional compact model. (paper)

  5. Silicon transport under rotating and combined magnetic fields in liquid phase diffusion growth of SiGe

    Armour, N.; Dost, S. [Crystal Growth Laboratory, University of Victoria, Victoria, BC, V8W 3P6 (Canada)

    2010-04-15

    The effect of applied rotating and combined (rotating and static) magnetic fields on silicon transport during the liquid phase diffusion growth of SiGe was experimentally studied. 72-hour growth periods produced some single crystal sections. Single and polycrystalline sections of the processed samples were examined for silicon composition. Results show that the application of a rotating magnetic field enhances silicon transport in the melt. It also has a slight positive effect on flattening the initial growth interface. For comparison, growth experiments were also conducted under combined (rotating and static) magnetic fields. The processed samples revealed that the addition of static field altered the thermal characteristics of the system significantly and led to a complete melt back of the germanium seed. Silicon transport in the melt was also enhanced under combined fields compared with experiments with no magnetic field. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Effect of a static magnetic field on silicon transport in liquid phase diffusion growth of SiGe

    Armour, N.; Dost, S. [Crystal Growth Laboratory, University of Victoria, Victoria, BC V8W 3P6 (Canada)

    2010-03-15

    Liquid phase diffusion experiments have been performed without and with the application of a 0.4 T static magnetic field using a three-zone DC furnace system. SiGe crystals were grown from the germanium side for a period of 72 h. Experiments have led to the growth of single crystal sections varying from 0 to 10 mm thicknesses. Examination of the processed samples (single and polycrystalline sections) has shown that the effect of the applied static magnetic field is significant. It alters the temperature distribution in the system, reduces mass transport in the melt, and leads to a much lower growth rate. The initial curved growth interface was slightly flattened under the effect of magnetic field. There were no growth striations in the single crystal sections of the samples. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Simulating characteristics of Si/Ge tandem monolithic solar cell with Si1-xGex buffer layer

    Gnilenko A. B.

    2015-12-01

    Full Text Available In spite of many efforts to propose new semiconductor materials and sophisticated constructions of solar cells, crystalline silicone remains the main photovoltaic material widely used up to now. There are various methods to enhance the efficiency of silicone solar cells. One of them is to combine silicone with an additional semiconductor material with the different bandgap to form a tandem construction. For example, the germanium sub-cell used as the bottom cascade for the silicone sub-cell in the tandem monolithic solar cell makes it possible to utilize the "red" sub-band of solar spectra increasing overall solar cell efficiency. The problem of the 4.2% mismatch in lattice constant between Si and Ge can be resolved in such a case by the use of SiGe buffer layer. In the paper the results of the computer simulation for Si/Ge tandem monolithic solar cell with Si1-xGex buffer layer are presented. In the solar cell under consideration, the step graded Si1-xGex buffer layer is located between the top silicone and the bottom germanium cascades to reduce the threading dislocation density in mismatched materials. The cascades are commutated by the use of the germanium tunnel diode between the bottom sub-cell and the buffer layer. For the solar cell modeling, the physically-based device simulator ATLAS of Silvaco TCAD software is employed to predict the electrical behavior of the semiconductor structure and to provide a deep insight into the internal physical processes. The voltage-current characteristic, photovoltaic parameters and the distribution of basic physical values are obtained for the investigated tandem solar cell. The influence of layer thicknesses on the photovoltaic parameters is studied. The calculated efficiency of the tandem solar cell reaches 13% which is a quarter more than the efficiency of a simple silicone solar cell with the same constructive parameters and under the same illumination conditions.

  8. Dispersoid reinforced alloy powder and method of making

    Anderson, Iver E.; Terpstra, Robert L.

    2017-12-05

    A method of making dispersion-strengthened alloy particles involves melting an alloy having a corrosion and/or oxidation resistance-imparting alloying element, a dispersoid-forming element, and a matrix metal wherein the dispersoid-forming element exhibits a greater tendency to react with a reactive species acquired from an atomizing gas than does the alloying element. The melted alloy is atomized with the atomizing gas including the reactive species to form atomized particles so that the reactive species is (a) dissolved in solid solution to a depth below the surface of atomized particles and/or (b) reacted with the dispersoid-forming element to form dispersoids in the atomized particles to a depth below the surface of said atomized particles. The atomized alloy particles are solidified as solidified alloy particles or as a solidified deposit of alloy particles. Bodies made from the dispersion strengthened alloy particles, deposit thereof, exhibit enhanced fatigue and creep resistance and reduced wear as well as enhanced corrosion and/or oxidation resistance at high temperatures by virtue of the presence of the corrosion and/or oxidation resistance imparting alloying element in solid solution in the particle alloy matrix.

  9. Dispersoid reinforced alloy powder and method of making

    Anderson, Iver E.; Terpstra, Robert L.

    2017-10-10

    A method of making dispersion-strengthened alloy particles involves melting an alloy having a corrosion and/or oxidation resistance-imparting alloying element, a dispersoid-forming element, and a matrix metal wherein the dispersoid-forming element exhibits a greater tendency to react with a reactive species acquired from an atomizing gas than does the alloying element. The melted alloy is atomized with the atomizing gas including the reactive species to form atomized particles so that the reactive species is (a) dissolved in solid solution to a depth below the surface of atomized particles and/or (b) reacted with the dispersoid-forming element to form dispersoids in the atomized particles to a depth below the surface of said atomized particles. The atomized alloy particles are solidified as solidified alloy particles or as a solidified deposit of alloy particles. Bodies made from the dispersion strengthened alloy particles, deposit thereof, exhibit enhanced fatigue and creep resistance and reduced wear as well as enhanced corrosion and/or oxidation resistance at high temperatures by virtue of the presence of the corrosion and/or oxidation resistance imparting alloying element in solid solution in the particle alloy matrix.

  10. Superconducting alloys

    Bowers, J.E.

    1976-01-01

    Reference is made to superconductors having high critical currents. The superconductor described comprises an alloy consisting of a matrix of a Type II superconductor which is a homogeneous mixture of 50 to 95 at.% Pb and 5 to 40 at.%Bi and/or 10 to 50 at.%In. Dispersed in the matrix is a material to provide pinning centres comprising from 0.01% to 20% by volume of the alloy; this material is a stable discontinuous phase of discrete crystalline particles of Cu, Mn, Te, Se, Ni, Ca, Cr, Ce, Ge or La, either in the form of the element or a compound with a component of the matrix. These particles should have an average diameter of not more than 2μ. A method for making this alloy is described. (U.K.)

  11. Characteristics of Film Formed on Alloy 600 and Alloy 690 in Water Containing lead

    Hwang Seong Sik; Lee, Deok Hyun; Kim, Hong Pyo; Kim, Joung Soo; Kim, Ju Yup

    1999-01-01

    Anodic polarization behaviors of Alloy 600 and Alloy 690 have been studied as a function of lead content in the solution of pH 4 and 10 at 90 .deg. C. As the amount of lead in the solution increased, critical current densities and passive current densities of Alloy 600 and Alloy 690 increased, while the breakdown potential of the alloys decreased. The high critical current density in the high lead solution was thought to come from the combination of an enhanced dissolution of constituents on the surface of the alloys by the lead and an anodic dissolution of metallic lead deposited on the surface of the specimens. The morphology of lead precipitated on the specimen after the anodic scan changed with the pH of solution: small irregular particles were precipitated on the surface of the specimen in the solution of pH 4, while the high density of regular sized particles was formed on it in the solution of pH 10.Pb was observed to enhance Cr depletion from the outer surface of Alloy 600 and Alloy 690 and also to increase the ratio of O 2- /OH - in the surface film formed in the high lead solution. The SCC resistance of Alloy 600 and Alloy 690 may have decreased due to the poor quality of the passive film formed and the enhanced oxygen evolution in the solution containing lead

  12. Determination of structural, mechanical and corrosion properties of Nb{sub 2}O{sub 5} and (Nb{sub y}Cu{sub 1−y})O{sub x} thin films deposited on Ti6Al4V alloy substrates for dental implant applications

    Mazur, M. [Wroclaw University of Technology, Faculty of Microsystem Electronics and Photonics, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Kalisz, M., E-mail: malgorzata.kalisz@its.waw.pl [Motor Transport Institute, Jagiellońska 80, 03-301 Warsaw (Poland); Wojcieszak, D. [Wroclaw University of Technology, Faculty of Microsystem Electronics and Photonics, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Grobelny, M. [Motor Transport Institute, Jagiellońska 80, 03-301 Warsaw (Poland); Mazur, P. [Wroclaw University, Institute of Experimental Physics, Max Born 9, 50-204 Wroclaw (Poland); Kaczmarek, D.; Domaradzki, J. [Wroclaw University of Technology, Faculty of Microsystem Electronics and Photonics, Janiszewskiego 11/17, 50-372 Wroclaw (Poland)

    2015-02-01

    In this paper comparative studies on the structural, mechanical and corrosion properties of Nb{sub 2}O{sub 5}/Ti and (Nb{sub y}Cu{sub 1−y})O{sub x}/Ti alloy systems have been investigated. Pure layers of niobia and niobia with a copper addition were deposited on a Ti6Al4V titanium alloy surface using the magnetron sputtering method. The physicochemical properties of the prepared thin films were examined with the aid of XRD, XPS SEM and AFM measurements. The mechanical properties (i.e., nanohardness, Young's modulus and abrasion resistance) were performed using nanoindentation and a steel wool test. The corrosion properties of the coatings were determined by analysis of the voltammetric curves. The deposited coatings were crack free, exhibited good adherence to the substrate, no discontinuity of the thin film was observed and the surface morphology was homogeneous. The hardness of pure niobium pentoxide was ca. 8.64 GPa. The obtained results showed that the addition of copper into pure niobia resulted in the preparation of a layer with a lower hardness of ca. 7.79 GPa (for niobia with 17 at.% Cu) and 7.75 GPa (for niobia with 25 at.% Cu). The corrosion properties of the tested thin films deposited on the surface of titanium alloy depended on the composition of the thin layer. The addition of copper (i.e. a noble metal) to Nb{sub 2}O{sub 5} film increased the corrosion resistance followed by a significant decrease in the value of corrosion currents and, in case of the highest Cu content, the shift of corrosion potential towards the noble direction. The best corrosion properties were obtained from a sample of Ti6Al4V coated with (Nb{sub 0.75}Cu{sub 0.25})O{sub x} thin film. It seems that the tested materials could be used in the future as protection coatings for Ti alloys in biomedical applications such as implants. - Highlights: • Nb{sub 2}O{sub 5} and Nb{sub 2}O{sub 5}:Cu thin films were deposited on a Ti–Al–V surface using the magnetron sputtering.

  13. High Growth Rate Deposition of Hydrogenated Amorphous Silicon-Germanium Films and Devices Using ECR-PECVD

    Liu, Yong [Iowa State Univ., Ames, IA (United States)

    2002-01-01

    Hydrogenated amorphous silicon germanium films (a-SiGe:H) and devices have been extensively studied because of the tunable band gap for matching the solar spectrum and mature the fabrication techniques. a-SiGe:H thin film solar cells have great potential for commercial manufacture because of very low cost and adaptability to large-scale manufacturing. Although it has been demonstrated that a-SiGe:H thin films and devices with good quality can be produced successfully, some issues regarding growth chemistry have remained yet unexplored, such as the hydrogen and inert-gas dilution, bombardment effect, and chemical annealing, to name a few. The alloying of the SiGe introduces above an order-of-magnitude higher defect density, which degrades the performance of the a-SiGe:H thin film solar cells. This degradation becomes worse when high growth-rate deposition is required. Preferential attachment of hydrogen to silicon, clustering of Ge and Si, and columnar structure and buried dihydride radicals make the film intolerably bad. The work presented here uses the Electron-Cyclotron-Resonance Plasma-Enhanced Chemical Vapor Deposition (ECR-PECVD) technique to fabricate a-SiGe:H films and devices with high growth rates. Helium gas, together with a small amount of H2, was used as the plasma species. Thickness, optical band gap, conductivity, Urbach energy, mobility-lifetime product, I-V curve, and quantum efficiency were characterized during the process of pursuing good materials. The microstructure of the a-(Si,Ge):H material was probed by Fourier-Transform Infrared spectroscopy. They found that the advantages of using helium as the main plasma species are: (1) high growth rate--the energetic helium ions break the reactive gas more efficiently than hydrogen ions; (2) homogeneous growth--heavy helium ions impinging on the surface promote the surface mobility of the reactive radicals, so that heteroepitaxy growth as clustering of Ge and Si, columnar structure are

  14. Nanocrystalline Ni-Co Alloy Synthesis by High Speed Electrodeposition

    Idris, Jamaliah; Christian, Chukwuekezie; Gaius, Eyu

    2013-01-01

    Electrodeposition of nanocrystals is economically and technologically viable production path for the synthesis of pure metals and alloys both in coatings and bulk form. The study presents nanocrystalline Ni-Co alloy synthesis by high speed electrodeposition. Nanocrystalline Ni-Co alloys coatings were prepared by direct current (DC) and deposited directly on steel and aluminum substrates without any pretreatment, using high speed electrodeposition method. The influence of the electrolysis par...

  15. Silicon Alloying On Aluminium Based Alloy Surface

    Suryanto

    2002-01-01

    Silicon alloying on surface of aluminium based alloy was carried out using electron beam. This is performed in order to enhance tribological properties of the alloy. Silicon is considered most important alloying element in aluminium alloy, particularly for tribological components. Prior to silicon alloying. aluminium substrate were painted with binder and silicon powder and dried in a furnace. Silicon alloying were carried out in a vacuum chamber. The Silicon alloyed materials were assessed using some techniques. The results show that silicon alloying formed a composite metal-non metal system in which silicon particles are dispersed in the alloyed layer. Silicon content in the alloyed layer is about 40% while in other place is only 10.5 %. The hardness of layer changes significantly. The wear properties of the alloying alloys increase. Silicon surface alloying also reduced the coefficient of friction for sliding against a hardened steel counter face, which could otherwise be higher because of the strong adhesion of aluminium to steel. The hardness of the silicon surface alloyed material dropped when it underwent a heating cycle similar to the ion coating process. Hence, silicon alloying is not a suitable choice for use as an intermediate layer for duplex treatment

  16. Hydroxyapatite coating by biomimetic method on titanium alloy ...

    Home; Journals; Bulletin of Materials Science; Volume 28; Issue 6. Hydroxyapatite coating by biomimetic method on titanium alloy using concentrated SBF. S Bharati M K Sinha ... Optical microscopic and SEM observations revealed the deposition of Ca–P layer on the titanium alloy by both the methods. Thickness of coating ...

  17. Electrodeposition of NiPd alloy from aqueous chloride electrolytes

    Mech, K., E-mail: kmech@agh.edu.pl [AGH University of Science and Technology, Academic Centre for Materials and Nanotechnology, al. A. Mickiewicza 30, 30-059 Krakow (Poland); Wróbel, M [AGH, University of Science and Technology, Faculty of Metals Engineering and Industrial Computer Science, al. A. Mickiewicza 30, Krakow (Poland); Wojnicki, M [AGH University of Science and Technology, Faculty of Non-Ferrous Metals, Department of Physical Chemistry and Metallurgy of Non-Ferrous Metals, al. A. Mickiewicza 30, 30-059 Krakow (Poland); Mech-Piskorz, J. [Institute of Physical Chemistry, Polish Academy of Sciences, ul. Kasprzaka 44/52, 01-224 Warsaw (Poland); Żabiński, P.; Kowalik, R. [AGH University of Science and Technology, Faculty of Non-Ferrous Metals, Department of Physical Chemistry and Metallurgy of Non-Ferrous Metals, al. A. Mickiewicza 30, 30-059 Krakow (Poland)

    2016-12-01

    Highlights: • Mechanism of electrode reactions resulting in NiPd alloys was described. • Electrolysis conditions enabling alloys synthesis were determined. • Alloys were characterized towards composition, structure and surface properties. - Abstract: Presented results describing properties of alloys deposited at potentiostatic conditions in Ni{sup 2+} – Pd{sup 2+} – Cl{sup −} – H{sub 2}O system. Electrolysis parameters were defined based on results of thermodynamic analysis as well as voltammetry coupled with electrochemical quartz crystal microbalance (EQCM). Influence of electrode potential and electrolyte components concentration on alloy composition, morphology and its structure was investigated. Alloys were deposited at different Ni(II) and Pd(II) complexes concentrations. Results indicated possibilities of electrochemical synthesis of alloys of wide composition range. Deposits structure as well as crystallites size were discussed based on results of XRD measurements. Alloys composition was determined with the use of energy dispersive spectroscopy (EDS). Morphology of alloys was characterized with the use of scanning electron microscopy (SEM).

  18. Order/disorder in electrodeposited aluminum-titanium alloys

    Stafford G.R.

    2003-01-01

    Full Text Available The composition, morphology, and crystallographic microstructure of Al-Ti alloys electrodeposited from two different chloroaluminate molten salt electrolytes were examined. Alloys containing up to 28 % atomic fraction Ti were electrodeposited at 150 °C from 2:1 AlCl3-NaCl with controlled additions of Ti2+. The apparent limit on alloy composition is proposed to be due to a mechanism by which Al3Ti forms through the reductive decomposition of [Ti(AlCl43]-. The composition of Al-Ti alloys electrodeposited from the AlCl3-EtMeImCl melt at 80 °C is limited by the diffusion of Ti2+ to the electrode surface. Alloys containing up to 18.4 % atomic fraction Ti are only obtainable at high Ti2+ concentrations in the melt and low current densities. Alloys electrodeposited from the higher temperature melt have an ordered L12 crystal structure while alloys of similar composition but deposited at lower temperature are disordered fcc. The appearance of antiphase boundaries in the ordered alloys suggests that the deposit may be disordered initially and then orders in the solid state, subsequent to the charge transfer step and adatom incorporation into the lattice. This is very similar to the disorder-trapping observed in rapidly solidified alloys. The measured domain size is consistent with a mechanism of diffusion-controlled doman growth at the examined deposition temperatures and times.

  19. Ge deposition on Si(1 0 0) in the conditions close to dynamic equilibrium between islands growth and their decay

    Shklyaev, A.A.; Budazhapova, A.E.

    2016-01-01

    Graphical abstract: - Highlights: • Solid source MBE is used for island growth by Ge deposition on Si(1 0 0) at 700–900 °C. • Islands acquire a monomodal size distribution at temperatures above 800 °C. • Islands form ordered arrays during Ge deposition at 900 °C. • Conditions close to dynamic equilibrium are realized for growth and decay of islands at 900 °C. • Shape of ordered islands is cone with shallow sidewalls. - Abstract: The formation of islands arrays during Ge deposition on Si(1 0 0) at high temperatures is studied using scanning tunneling and electron microscopies. It is found that the island size and shape distributions, which are known to be bimodal at growth temperatures below 700 °C, become monomodal at temperatures above 800 °C. The obtained data suggest that the processes such as island nucleation and Ostwald ripening become less significant in the surface morphology formation, giving the advantage to selective attachment of deposited Ge atoms to island sidewalls and spatially inhomogeneous Si-Ge intermixing, as the temperature increases. At 900 °C, the islands exhibit a tendency to form laterally ordered arrays when the growth conditions approach the dynamic equilibrium between the growth of islands and their decay by means of Si-Ge intermixing. The islands ordering is accompanied by their shape transformation into the cone with shallow sidewalls inclined from (1 0 0) by angles of around 10°.

  20. Capacitor-less memory cell fabricated on nano-scale strained Si on a relaxed SiGe layer-on-insulator

    Kim, Tae-Hyun; Park, Jea-Gun

    2013-01-01

    We investigated the combined effect of the strained Si channel and hole confinement on the memory margin enhancement for a capacitor-less memory cell fabricated on nano-scale strained Si on a relaxed SiGe layer-on-insulator (ε-Si SGOI). The memory margin for the ε-Si SGOI capacitor-less memory cell was higher than that of the memory cell fabricated on an unstrained Si-on-insulator (SOI) and increased with increasing Ge concentration of the relaxed SiGe layer; i.e. the memory margin for the ε-Si SGOI capacitor-less memory cell (138.6 µA) at a 32 at% Ge concentration was 3.3 times higher than the SOI capacitor-less memory cell (43 µA). (paper)

  1. Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer

    Baidakova, N. A., E-mail: banatale@ipmras.ru [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Bobrov, A. I. [University of Nizhny Novgorod (Russian Federation); Drozdov, M. N.; Novikov, A. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Pavlov, D. A. [University of Nizhny Novgorod (Russian Federation); Shaleev, M. V.; Yunin, P. A.; Yurasov, D. V.; Krasilnik, Z. F. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2015-08-15

    The possibility of using substrates based on “strained silicon on insulator” structures with a thin (25 nm) buried oxide layer for the growth of light-emitting SiGe structures is studied. It is shown that, in contrast to “strained silicon on insulator” substrates with a thick (hundreds of nanometers) oxide layer, the temperature stability of substrates with a thin oxide is much lower. Methods for the chemical and thermal cleaning of the surface of such substrates, which make it possible to both retain the elastic stresses in the thin Si layer on the oxide and provide cleaning of the surface from contaminating impurities, are perfecte. It is demonstrated that it is possible to use the method of molecular-beam epitaxy to grow light-emitting SiGe structures of high crystalline quality on such substrates.

  2. Tsunami deposits

    NONE

    2013-08-15

    The NSC (the Nuclear Safety Commission of Japan) demand to survey on tsunami deposits by use of various technical methods (Dec. 2011), because tsunami deposits have useful information on tsunami activity, tsunami source etc. However, there are no guidelines on tsunami deposit survey in JAPAN. In order to prepare the guideline of tsunami deposits survey and evaluation and to develop the method of tsunami source estimation on the basis of tsunami deposits, JNES carried out the following issues; (1) organizing information of paleoseismological record and tsunami deposit by literature research, (2) field survey on tsunami deposit, and (3) designing the analysis code of sediment transport due to tsunami. As to (1), we organize the information gained about tsunami deposits in the database. As to (2), we consolidate methods for surveying and identifying tsunami deposits in the lake based on results of the field survey in Fukui Pref., carried out by JNES. In addition, as to (3), we design the experimental instrument for hydraulic experiment on sediment transport and sedimentation due to tsunamis. These results are reflected in the guideline on the tsunami deposits survey and evaluation. (author)

  3. Tsunami deposits

    2013-01-01

    The NSC (the Nuclear Safety Commission of Japan) demand to survey on tsunami deposits by use of various technical methods (Dec. 2011), because tsunami deposits have useful information on tsunami activity, tsunami source etc. However, there are no guidelines on tsunami deposit survey in JAPAN. In order to prepare the guideline of tsunami deposits survey and evaluation and to develop the method of tsunami source estimation on the basis of tsunami deposits, JNES carried out the following issues; (1) organizing information of paleoseismological record and tsunami deposit by literature research, (2) field survey on tsunami deposit, and (3) designing the analysis code of sediment transport due to tsunami. As to (1), we organize the information gained about tsunami deposits in the database. As to (2), we consolidate methods for surveying and identifying tsunami deposits in the lake based on results of the field survey in Fukui Pref., carried out by JNES. In addition, as to (3), we design the experimental instrument for hydraulic experiment on sediment transport and sedimentation due to tsunamis. These results are reflected in the guideline on the tsunami deposits survey and evaluation. (author)

  4. Spray deposition using impulse atomization technique

    Ellendt, N.; Schmidt, R.; Knabe, J.; Henein, H.; Uhlenwinkel, V.

    2004-01-01

    A novel technique, impulse atomization, has been used for spray deposition. This single fluid atomization technique leads to different spray characteristics and impact conditions of the droplets compared to gas atomization technique which is the common technique used for spray deposition. Deposition experiments with a Cu-6Sn alloy were conducted to evaluate the appropriateness of impulse atomization to produce dense material. Based on these experiments, a model has been developed to simulate the thermal history and the local solidification rates of the deposited material. A numerical study shows how different cooling conditions affect the solidification rate of the material

  5. Heat treatment of NiCrFe alloy 600 to optimize resistance to intergranular stress corrosion

    Steeves, A.F.; Bibb, A.E.

    A process of producing a NiCrFe alloy having a high resistance to stress corrosion cracking comprises heating a NiCrFe alloy to a temperature sufficient to enable the carbon present in the alloy body in the form of carbide deposits to enter into solution, rapidly cooling the alloy body, and heating the cooled body to a temperature between 1100 to 1500/sup 0/F for about 1 to 30 hours.

  6. Recent developments using TowerJazz SiGe BiCMOS platform for mmWave and THz applications

    Kar-Roy, Arjun; Howard, David; Preisler, Edward J.; Racanelli, Marco

    2013-05-01

    In this paper, we report on the highest speed 240GHz/340GHz FT/FMAX NPN which is now available for product designs in the SBC18H4 process variant of TowerJazz's mature 0.18μm SBC18 silicon germanium (SiGe) BiCMOS technology platform. NFMIN of ~2dB at 50GHz has been obtained with these NPNs. We also describe the integration of earlier generation NPNs with FT/FMAX of 240GHz/280GHz into SBC13H3, a 0.13μm SiGe BiCMOS technology platform. Next, we detail the integration of the deep silicon via (DSV), through silicon via (TSV), high-resistivity substrate, sub-field stitching and hybrid-stitching capability into the 0.18μm SBC18 technology platform to enable higher performance and highly integrated product designs. The integration of SBC18H3 into a thick-film SOI substrate, with essentially unchanged FT and FMAX, is also described. We also report on recent circuit demonstrations using the SBC18H3 platform: (1) a 4-element phased-array 70-100GHz broadband transmit and receive chip with flat saturated power greater than 5dBm and conversion gain of 33dB; (2) a fully integrated W-band 9-element phase-controllable array with responsivity of 800MV/W and receiver NETD is 0.45K with 20ms integration time; (3) a 16-element 4x4 phased-array transmitter with scanning in both the E- and H-planes with maximum EIRP of 23-25 dBm at 100-110GHz; (4) a power efficient 200GHz VCO with -7.25dBm output power and tuning range of 3.5%; and (5) a 320GHz 16-element imaging receiver array with responsivity of 18KV/W at 315GHz, a 3dB bandwidth of 25GHz and a low NEP of 34pW/Hz1/2. Wafer-scale large-die implementation of the phased-arrays and mmWave imagers using stitching in TowerJazz SBC18 process are also discussed.

  7. Exogenous deposits

    Khasanov, A.Kh.

    1988-01-01

    Exogenous deposits forming as a result of complex exogenous processes, passed under the influence of outside forces on the Earth surface. To them relate physical and chemical weathering, decomposition and decay of mineral masses, redistribution and transportation of material, forming and deposit of new minerals and ores steady on the earth surface conditions

  8. Corrosion of copper alloys in sulphide containing district heting systems

    Thorarinsdottir, R.I.; Maahn, Ernst Emanuel

    1999-01-01

    Copper and some copper alloys are prone to corrosion in sulphide containing geothermal water analogous to corrosion observed in district heating systems containing sulphide due to sulphate reducing bacteria. In order to study the corrosion of copper alloys under practical conditions a test...... was carried out at four sites in the Reykjavik District Heating System. The geothermal water chemistry is different at each site. The corrosion rate and the amount and chemical composition of deposits on weight loss coupons of six different copper alloys are described after exposure of 12 and 18 months......, respectively. Some major differences in scaling composition and the degree of corrosion attack are observed between alloys and water types....

  9. Fabrication of Micro Components by Electrochemical Deposition

    Tang, Peter Torben

    The main issue of this thesis is the combination of electrochemical deposition of metals and micro machining. Processes for electroplating and electroless plating of nickel and nickel alloys have been developed and optimised for compatibility with microelectronics and silicon based micromechanics...... of electrochemical machining and traditional machining is compared to micro machining techniques as performed in the field of microelectronics. Various practical solutions and equipment for electrochemical deposition of micro components are demonstrated, as well as the use and experience obtained utilising...

  10. Solid solution lithium alloy cermet anodes

    Richardson, Thomas J.

    2013-07-09

    A metal-ceramic composite ("cermet") has been produced by a chemical reaction between a lithium compound and another metal. The cermet has advantageous physical properties, high surface area relative to lithium metal or its alloys, and is easily formed into a desired shape. An example is the formation of a lithium-magnesium nitride cermet by reaction of lithium nitride with magnesium. The reaction results in magnesium nitride grains coated with a layer of lithium. The nitride is inert when used in a battery. It supports the metal in a high surface area form, while stabilizing the electrode with respect to dendrite formation. By using an excess of magnesium metal in the reaction process, a cermet of magnesium nitride is produced, coated with a lithium-magnesium alloy of any desired composition. This alloy inhibits dendrite formation by causing lithium deposited on its surface to diffuse under a chemical potential into the bulk of the alloy.

  11. A study on wear resistance and microcrack of the Ti3Al/TiAl + TiC ceramic layer deposited by laser cladding on Ti-6Al-4V alloy

    Li Jianing; Chen Chuanzhong; Squartini, Tiziano; He Qingshan

    2010-01-01

    Laser cladding of the Al + TiC alloy powder on Ti-6Al-4V alloy can form the Ti 3 Al/TiAl + TiC ceramic layer. In this study, TiC particle-dispersed Ti 3 Al/TiAl matrix ceramic layer on the Ti-6Al-4V alloy by laser cladding has been researched by means of X-ray diffraction, scanning electron microscope, electron probe micro-analyzer, energy dispersive spectrometer. The main difference from the earlier reports is that Ti 3 Al/TiAl has been chosen as the matrix of the composite coating. The wear resistance of the Al + 30 wt.% TiC and the Al + 40 wt.% TiC cladding layer was approximately 2 times greater than that of the Ti-6Al-4V substrate due to the reinforcement of the Ti 3 Al/TiAl + TiC hard phases. However, when the TiC mass percent was above 40 wt.%, the thermal stress value was greater than the materials yield strength limit in the ceramic layer, the microcrack was present and its wear resistance decreased.

  12. A study on wear resistance and microcrack of the Ti{sub 3}Al/TiAl + TiC ceramic layer deposited by laser cladding on Ti-6Al-4V alloy

    Li Jianing, E-mail: ljnljn1022@163.com [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Department of Materials Science, Shandong University, Jing Shi Road 17923, Jinan 250061, Shandong (China); Chen Chuanzhong [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials, Ministry of Education, Department of Materials Science, Shandong University, Jing Shi Road 17923, Jinan 250061, Shandong (China); Squartini, Tiziano [INFM-Department of Physics, Siena University, Siena 53100 (Italy); He Qingshan [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials, Ministry of Education, Department of Materials Science, Shandong University, Jing Shi Road 17923, Jinan 250061, Shandong (China)

    2010-12-15

    Laser cladding of the Al + TiC alloy powder on Ti-6Al-4V alloy can form the Ti{sub 3}Al/TiAl + TiC ceramic layer. In this study, TiC particle-dispersed Ti{sub 3}Al/TiAl matrix ceramic layer on the Ti-6Al-4V alloy by laser cladding has been researched by means of X-ray diffraction, scanning electron microscope, electron probe micro-analyzer, energy dispersive spectrometer. The main difference from the earlier reports is that Ti{sub 3}Al/TiAl has been chosen as the matrix of the composite coating. The wear resistance of the Al + 30 wt.% TiC and the Al + 40 wt.% TiC cladding layer was approximately 2 times greater than that of the Ti-6Al-4V substrate due to the reinforcement of the Ti{sub 3}Al/TiAl + TiC hard phases. However, when the TiC mass percent was above 40 wt.%, the thermal stress value was greater than the materials yield strength limit in the ceramic layer, the microcrack was present and its wear resistance decreased.

  13. Electro-spark deposition technology

    Johnson, R.N. [Pacific Northwest National Lab., Richland, WA (United States)

    1997-12-01

    Electro-Spark Deposition (ESD) is a micro-welding process that uses short duration, high-current electrical pulses to deposit or alloy a consumable electrode material onto a metallic substrate. The ESD process was developed to produce coatings for use in severe environments where most other coatings fail. Because of the exceptional damage resistance of these coatings, and the versatility of the process to apply a wide variety of alloys, intermetallics, and cermets to metal surfaces, the ESD process has been designated critical to the life and economy of the advanced fossil energy systems as the higher temperatures and corrosive environments exceed the limits of known structural materials to accommodate the service conditions. Developments include producing iron aluminide-based coatings with triple the corrosion resistance of the best previous Fe{sub 3}Al coatings, coatings with refractory metal diffusion barriers and multi layer coatings for achieving functionally gradient properties between the substrate and the surface. A new development is the demonstration of advanced aluminide-based ESD coatings for erosion and wear applications. One of the most significant breakthroughs to occur in the last dozen years is the discovery of a process regime that yields an order of magnitude increase in deposition rates and achievable coating thicknesses. Achieving this regime has required the development of advanced ESD electronic capabilities. Development is now focused on further improvements in deposition rates, system reliability when operating at process extremes, and economic competitiveness.

  14. Performance enhancement in p-channel charge-trapping flash memory devices with Si/Ge super-lattice channel and band-to-band tunneling induced hot-electron injection

    Liu, Li-Jung; Chang-Liao, Kuei-Shu; Jian, Yi-Chuen; Wang, Tien-Ko; Tsai, Ming-Jinn

    2013-01-01

    P-channel charge-trapping flash memory devices with Si, SiGe, and Si/Ge super-lattice channel are investigated in this work. A Si/Ge super-lattice structure with extremely low roughness and good crystal structure is obtained by precisely controlling the epitaxy thickness of Ge layer. Both programming and erasing (P/E) speeds are significantly improved by employing this Si/Ge super-lattice channel. Moreover, satisfactory retention and excellent endurance characteristics up to 10 6 P/E cycles with 3.8 V memory window show that the degradation on reliability properties is negligible when super-lattice channel is introduced. - Highlights: ► A super-lattice structure is proposed to introduce more Ge content into channel. ► Super-lattice structure possesses low roughness and good crystal structure. ► P-channel flash devices with Si, SiGe, and super-lattice channel are investigated. ► Programming/erasing speeds are significantly improved. ► Reliability properties can be kept for device with super-lattice channel

  15. Measurement, modeling, and simulation of cryogenic SiGe HBT amplifier circuits for fast single spin readout

    England, Troy; Curry, Matthew; Carr, Steve; Swartzentruber, Brian; Lilly, Michael; Bishop, Nathan; Carrol, Malcolm

    2015-03-01

    Fast, low-power quantum state readout is one of many challenges facing quantum information processing. Single electron transistors (SETs) are potentially fast, sensitive detectors for performing spin readout of electrons bound to Si:P donors. From a circuit perspective, however, their output impedance and nonlinear conductance are ill suited to drive the parasitic capacitance typical of coaxial conductors used in cryogenic environments, necessitating a cryogenic amplification stage. We will discuss calibration data, as well as modeling and simulation of cryogenic silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) circuits connected to a silicon SET and operating at 4 K. We find a continuum of solutions from simple, single-HBT amplifiers to more complex, multi-HBT circuits suitable for integration, with varying noise levels and power vs. bandwidth tradeoffs. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  16. Research progress on laser surface modification of titanium alloys

    Tian, Y.S.; Chen, C.Z.; Li, S.T.; Huo, Q.H.

    2005-01-01

    Recent developments on laser surface modification of titanium and its alloys are reviewed. Due to the intrinsic properties of high coherence and directionality, laser beam can be focus onto metallic surface to perform a broad range of treatments such as remelting, alloying and cladding, which are used to improve the wear and corrosion resistance of titanium alloys. In addition, the fabrication of bioactive films on the surface of titanium alloys to improve their biocompatibility can be performed by the method of laser ablation deposition. The effect of some laser processing parameters on the resulting surface properties of titanium alloys is discussed. The problems to be solved and the prospects in the field of laser modification of titanium and its alloys are elucidated

  17. Corrosion properties of the Mg alloy coated with polypyrrole films

    Grubač, Zoran; Rončević, Ivana Škugor; Metikoš-Huković, Mirjana

    2016-01-01

    Highlights: • Electropolymerization of pyrrole on Mg-alloy surface in presence of salicylate. • Salicylate dual role in PPy deposition: passivation and electron transfer mediation. • Redox potential of salicylate corresponds to potential of PPy nucleation. • EIS and polarization corrosion studies of PPy coated Mg-alloy in Hanks’ solution. • Polypyrrole significantly slowdown Mg alloy corrosion in Hanks’ solution. - Abstract: In the present study the reactive surface of Mg alloy was coated with the nontoxic biocompatible polypyrrole (PPy) film synthesized by electrochemical oxidation from an aqueous salicylate solution. Salicylate ions prevent Mg dissolution and act as an electron transfer mediator during the PPy film nucleation, formation and growth on the alloy surface. Kinetics of the pyrrole polymerization as well as corrosion resistance of the PPy coated Mg alloy in the Hanks’ solution were investigated using dc electrochemical methods and electrochemical impedance spectroscopy (EIS). Characterization of the surface film was performed by optical and Fourier transform infrared spectroscopy (FTIR).

  18. Translating VDM to Alloy

    Lausdahl, Kenneth

    2013-01-01

    specifications. However, to take advantage of the automated analysis of Alloy, the model-oriented VDM specifications must be translated into a constraint-based Alloy specifications. We describe how a sub- set of VDM can be translated into Alloy and how assertions can be expressed in VDM and checked by the Alloy...

  19. Thermoelectric Properties of Nanograined Si-Ge-Au Thin Films Grown by Molecular Beam Deposition

    Nishino, Shunsuke; Ekino, Satoshi; Inukai, Manabu; Omprakash, Muthusamy; Adachi, Masahiro; Kiyama, Makoto; Yamamoto, Yoshiyuki; Takeuchi, Tsunehiro

    2018-06-01

    Conditions to achieve extremely large Seebeck coefficient and extremely small thermal conductivity in Si-Ge-Au thin films formed of nanosized grains precipitated in amorphous matrix have been investigated. We employed molecular beam deposition to prepare Si1- x Ge x Au y thin films on sapphire substrate. The deposited films were annealed under nitrogen gas atmosphere at 300°C to 500°C for 15 min to 30 min. Nanocrystals dispersed in amorphous matrix were clearly observed by transmission electron microscopy. We did not observe anomalously large Seebeck coefficient, but very low thermal conductivity of nearly 1.0 W K-1 m-1 was found at around 0.2 Si-Ge bulk material for which dimensionless figure of merit of ZT ≈ 1 was reported at high temperature.

  20. Modified Stranski-Krastanov growth in Ge/Si heterostructures via nanostenciled pulsed laser deposition.

    MacLeod, J M; Cojocaru, C V; Ratto, F; Harnagea, C; Bernardi, A; Alonso, M I; Rosei, F

    2012-02-17

    The combination of nanostenciling with pulsed laser deposition (PLD) provides a flexible, fast approach for patterning the growth of Ge on Si. Within each stencilled site, the morphological evolution of the Ge structures with deposition follows a modified Stranski-Krastanov (SK) growth mode. By systematically varying the PLD parameters (laser repetition rate and number of pulses) on two different substrate orientations (111 and 100), we have observed corresponding changes in growth morphology, strain and elemental composition using scanning electron microscopy, atomic force microscopy and μ-Raman spectroscopy. The growth behaviour is well predicted within a classical SK scheme, although the Si(100) growth exhibits significant relaxation and ripening with increasing coverage. Other novel aspects of the growth include the increased thickness of the wetting layer and the kinetic control of Si/Ge intermixing via the PLD repetition rate.

  1. Effects of pre-sputtered Al interlayer on the atomic layer deposition of Al{sub 2}O{sub 3} films on Mg–10Li–0.5Zn alloy

    Wang, P.C.; Cheng, T.C. [Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan (China); Lin, H.C., E-mail: hclinntu@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan (China); Chen, M.J., E-mail: mjchen@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan (China); Lin, K.M. [Department of Materials Science and Engineering, Feng Chia University, Taichung, Taiwan (China); Yeh, M.T. [Amli Materials Technology Co. Ltd., New Taipei, Taiwan (China)

    2013-04-01

    In this study, a dual-layer of Al/Al{sub 2}O{sub 3} films was deposited on the Mg–10Li–0.5Zn substrate using both techniques of magnetron sputtering and atomic layer deposition (ALD). The pre-sputtered Al interlayer has a crystalline structure and the ALD-Al{sub 2}O{sub 3} film is amorphous. The Al interlayer could effectively obstruct the diffusion out of Li atoms from the Mg–10Li–0.5Zn substrate during the deposition of ALD-Al{sub 2}O{sub 3} film. The Mg–10Li–0.5Zn specimen with a dual-layer of Al/Al{sub 2}O{sub 3} films exhibits a much better corrosion resistance than those specimens with a single layer of sputtered Al or ALD-Al{sub 2}O{sub 3}.

  2. Structural evolution of Ge-rich Si1−xGex films deposited by jet-ICPCVD

    Yu Wang

    2015-11-01

    Full Text Available Amorphous Ge-rich Si1−xGex films with local Ge-clustering were deposited by dual-source jet-type inductively coupled plasma chemical-vapor deposition (jet-ICPCVD. The structural evolution of the deposited films annealed at various temperatures (Ta is investigated. Experimental results indicate that the crystallization occurs to form Ge and Si clusters as Ta = 500 °C. With raising Ta up to 900 °C, Ge clusters percolate together and Si diffuses and redistributes to form a Ge/SiGe core/shell structure, and some Ge atoms partially diffuse to the surface as a result of segregation. The present work will be helpful in understanding the structural evolution process of a hybrid SiGe films and beneficial for further optimizing the microstructure and properties.

  3. Co-deposition of metallic actinides on a solid cathode

    Limmer, S. J.; Williamson, M. A.; Willit, J. L. [Argonne National Laboratory, Argonne (United States)

    2008-08-15

    The amount of rare earth contamination that will be found in a co-deposit of actinides is a function of the type of cathode used. A non-alloying solid cathode will result in a significantly lower rare earth contamination in the actinide co-deposit than a liquid cadmium cathode. With proper control of the cathode potential vs. a stable reference electrode, co-deposition of uranium with other more electroactive metals has been demonstrated using a non-alloying solid cathode.

  4. Co-deposition of metallic actinides on a solid cathode

    Limmer, S. J.; Williamson, M. A.; Willit, J. L.

    2008-01-01

    The amount of rare earth contamination that will be found in a co-deposit of actinides is a function of the type of cathode used. A non-alloying solid cathode will result in a significantly lower rare earth contamination in the actinide co-deposit than a liquid cadmium cathode. With proper control of the cathode potential vs. a stable reference electrode, co-deposition of uranium with other more electroactive metals has been demonstrated using a non-alloying solid cathode

  5. A study of the performance of tight-binding models for silicon and silicon-germanium alloys

    Roberts, Amanda Killen

    1998-11-01

    resulted in a superior reproduction of a wide variety of physical properties of these systems, which is particularly evident in improved defect formation energies. We have also found that our SiGe model gives a good reproduction of Vegard's law for SiGe alloys containing up to 50% Ge. Given these results, we expect our Si, Ge, and SiGe models to perform well in dynamical studies of dopants and defects.

  6. Improving tribological properties of Ti-5Zr-3Sn-5Mo-15Nb alloy by double glow plasma surface alloying

    Guo, Lili; Qin, Lin, E-mail: qinlin@tyut.edu.cn; Kong, Fanyou; Yi, Hong; Tang, Bin

    2016-12-01

    Highlights: • The Mo alloyed layers were successfully prepared on TLM surface by DG-PSA. • The surface microhardness of TLM is remarkably enhanced by Mo alloying. • The TLM samples after Mo alloying exhibit good wettability. • The Mo alloyed TLM samples show excellent tribological properties. - Abstract: Molybdenum, an alloying element, was deposited and diffused on Ti-5Zr-3Sn-5Mo-15Nb (TLM) substrate by double glow plasma surface alloying technology at 900, 950 and 1000 °C. The microstructure, composition distribution and micro-hardness of the Mo modified layers were analyzed. Contact angles on deionized water and wear behaviors of the samples against corundum balls in simulated human body fluids were investigated. Results show that the surface microhardness is significantly enhanced after alloying and increases with treated temperature rising, and the contact angles are lowered to some extent. More importantly, compared to as-received TLM alloy, the Mo modified samples, especially the one treated at 1000 °C, exhibit the significant improvement of tribological properties in reciprocating wear tests, with lower specific wear rate and friction coefficient. To conclude, Mo alloying treatment is an effective approach to obtain excellent comprehensive properties including optimal wear resistance and improved wettability, which ensure the lasting and safety application for titanium alloys as the biomedical implants.

  7. Deposition of La0.8Sr0.2Cr0.97V0.03O3 and MnCr2O4 thin films on ferritic alloy for solid oxide fuel cell application

    Mikkelsen, Lars; Chen, Ming; Hendriksen, Peter Vang

    2007-01-01

    . The effects of the deposited thin films on the growth rate and the morphology of the oxide were investigated by weight gain measurements as well as by scanning electron microscopy. The growth of the oxide scales was reduced by both coatings, and most effectively by the LSC coating. The overall oxidation...

  8. Capas de SiGe policristalino hidrogenado y su aplicación en transistores de película delgada

    Rodríguez, A.

    2004-04-01

    Full Text Available The hydrogenation of polycrystalline SiGe layers, obtained by solid phase crystallization, by an electron ciclotron resonance hydrogen plasma and the influence of this hydrogenation process on the electrical characteristics of thin film transistors fabricated using this material as active layer have been studied. The hydrogenation processes were carried out at 150 and 250 ºC for several times, up to 11 hours. Infrared transmission spectra of these samples show only the absorption bands corresponding to Si-H bonds, indicating that hydrogen atoms are bonded mainly to silicon atoms. Ultraviolet reflectance measurements show that the surface damage caused by the plasma exposure increases as the Ge content of the film does. The transistors fabricated using polycrystalline SiGe films as active layer show a degradation phenomenon, consisting of a progressive decrease of the drain current at constant gate and drain bias. The degradation slows down as the hydrogenation time increases at constant temperature.

    En este trabajo se ha caracterizado el proceso de hidrogenación en un plasma generado por resonancia ciclotrónica de electrones de capas de SiGe policristalino obtenidas mediante cristalización en fase sólida y el efecto de la hidrogenación en las características eléctricas de transistores de película delgada fabricados usando dicho material. Los procesos de hidrogenación se realizaron a 150 y 250 ºC, con duraciones de hasta 11 horas. Los espectros de transmitancia en infrarrojo muestran solamente las bandas de absorción características de los enlaces Si-H. Estas bandas indican que el hidrógeno se incorpora al material enlazándose principalmente con los átomos de silicio. Las medidas de reflectancia en el ultravioleta indican que se crea daño en la superficie de la muestra y que éste aumenta a medida que lo hace el contenido en Ge. Los transistores de película delgada con capa activa de SiGe policristalino muestran un fen

  9. Steel alloys

    Bloom, E.E.; Stiegler, J.O.; Rowcliffe, A.F.; Leitnaker, J.M.

    1977-01-01

    The invention deals with a fuel element for fast breeder reactors. It consits essentially of a uranium oxide, nitride, or carbide or a mixture of these fuels with a plutonium or thorium oxide, nitride, or carbide. The fuel elements are coated with an austenitic stainless steel alloy. Inside the fuel elements, vacancies or small cavities are produced by neutron effects which causes the steel coating to swell. According to the invention, swelling is prevented by a modification of type 304, 316, 321, or 12 K 72HV commercial steels. They consist mainly of Fe, Cr, and Ni in a ratio determined by a temary diagram. They may also contain 1.8 to 2.3% by weight of Mo and a fraction of Si (0.7 to 2% by weight) and Ti(0.10 to 0.5% by weight) to prevent cavity formation. They are structurally modified by cold working. (IHOE) [de

  10. Plating on stainless steel alloys

    Dini, J.W.; Johnson, H.R.

    1981-01-01

    Quantitative adhesion data are presented for a variety of electroplated stainless steel type alloys. Results show that excellent adhesion can be obtained by using a Wood's nickel strike or a sulfamate nickel strike prior to final plating. Specimens plated after Wood's nickel striking failed in the deposit rather than at the interface between the substrate and the coating. Flyer plate quantitative tests showed that use of anodic treatment in sulfuric acid prior to Wood's nickel striking even further improved adhesion. In contrast activation of stainless steels by immersion or cathodic treatment in hydrochloric acid resulted in very reduced bond strengths with failure always occurring at the interface between the coating and substrate

  11. Nucleation and growth mechanism of Co–Pt alloy nanowires electrodeposited within alumina template

    Srivastav, Ajeet K., E-mail: srivastav.ajeet.kumar@gmail.com, E-mail: mm09d004@smail.iitm.ac.in [Indian Institute of Technology Madras, Department of Metallurgical and Materials Engineering (India); Shekhar, Rajiv [Indian Institute of Technology Kanpur, Department of Materials Science and Engineering (India)

    2015-01-15

    Co–Pt alloy nanowires were electrodeposited by direct current electrodeposition within nanoporous alumina templates with varying deposition potentials. The effect of deposition potential on nucleation and growth mechanisms during electrodeposition of Co–Pt alloy nanowires was investigated. The less negative deposition potential (−0.9 V) favours the instantaneous nucleation mechanism. The positive deviation from theoretical instantaneous and progressive nucleation mechanisms occurs at higher negative deposition potentials. The hysteresis behaviour and magnetic properties of electrodeposited Co–Pt alloy nanowires altered with varying deposition potential. The easy magnetization direction was in direction perpendicular to the wire axis. The deposition potential dependent change in hysteresis behaviour with increased coercivity and scattered remanence ratio was observed. This is attributed to better crystallinity with reduced defect density and hydrogen evolution causing structural changes at more negative deposition potentials.

  12. Overlay metallic-cermet alloy coating systems

    Gedwill, M.A.; Glasgow, T.K.; Levine, S.R.

    1982-01-01

    A substrate, such as a turbine blade, vane, or the like, which is subjected to high temperature use is coated with a base coating of an oxide dispersed, metallic alloy (cermet). A top coating of an oxidation, hot corrosion, erosion resistant alloy of nickel, cobalt, or iron is then deposited on the base coating. A heat treatment is used to improve the bonding. The base coating serves as an inhibitor to interdiffusion between the protective top coating and the substrate. Otherwise, the protective top coating would rapidly interact detrimentally with the substrate and degrade by spalling of the protective oxides formed on the outer surface at elevated temperatures

  13. Overlay metallic-cermet alloy coating systems

    Gedwill, M. A.; Levine, S. R.; Glasgow, T. K. (Inventor)

    1984-01-01

    A substrate, such as a turbine blade, vane, or the like, which is subjected to high temperature use is coated with a base coating of an oxide dispersed, metallic alloy (cermet). A top coating of an oxidation, hot corrosion, erosion resistant alloy of nickel, cobalt, or iron is then deposited on the base coating. A heat treatment is used to improve the bonding. The base coating serves as an inhibitor to interdiffusion between the protective top coating and the substrate. Otherwise, the protective top coating would rapidly interact detrimentally with the substrate and degrade by spalling of the protective oxides formed on the outer surface at elevated temperatures.

  14. Influence of cathodic current density and mechanical stirring on the electrodeposition of Cu-Co alloys in citrate bath

    Leandro Trinta de Farias; Aderval Severino Luna; Dalva Cristina Baptista do Lago; Lilian Ferreira de Senna

    2008-01-01

    Cathodic polarization curves of Cu-Co alloys were galvanostatically obtained on a platinum net, using electrolytes containing copper and cobalt sulfates, sodium citrate and boric acid (pH values ranging from 4.88 to 6.00), with different mechanical stirring conditions. In order to evaluate quantitatively the influence of the applied current density and the mechanical stirring on the cathodic efficiency, the alloy composition for the Cu-Co alloy deposition process, and the average deposition p...

  15. Aligned, plasma sprayed SmCo5 deposits

    Kumar, K.; Das, D.

    1986-01-01

    Highly aligned SmCo 5 deposits were produced using plasma spraying. c-axis alignment, normal to the plane of the deposit, was achieved by depositing the Sm-Co alloys on steel substrates maintained at high temperatures. The substrates were heated by the plasma flame to obtain the high temperatures. The attainment of a range of substrate temperatures was made possible through control over the geometry of the substrate

  16. In-situ synchrotron x-ray study of the crystallization behavior of Ce0.9La0.1O2−x thin films deposited on NiW alloy substrates by chemical solution method

    Yue, Zhao; Grivel, Jean-Claude; Abrahamsen, Asger Bech

    2011-01-01

    The phase and texture formation of La doped CeO2 (CLO) films deposited by the chemical solution method are studied by in situ synchrotron x-ray diffraction. It is found that the CLO crystallites forms excellent in-plane texture as soon as the phase appears at 860°C, indicating that interfacial nu...... by diffusion. The success of this work demonstrates the possibility of studying crystallization behaviors of solution derived films using a non-destructive method, which has the potential of being applicable to most types of thin film samples.......The phase and texture formation of La doped CeO2 (CLO) films deposited by the chemical solution method are studied by in situ synchrotron x-ray diffraction. It is found that the CLO crystallites forms excellent in-plane texture as soon as the phase appears at 860°C, indicating that interfacial...

  17. Salt Fog Testing Iron-Based Amorphous Alloys

    Rebak, Raul B.; Aprigliano, Louis F.; Day, S. Daniel; Farmer, Joseph C.

    2007-01-01

    Iron-based amorphous alloys are hard and highly corrosion resistant, which make them desirable for salt water and other applications. These alloys can be produced as powder and can be deposited as coatings on any surface that needs to be protected from the environment. It was of interest to examine the behavior of these amorphous alloys in the standard salt-fog testing ASTM B 117. Three different amorphous coating compositions were deposited on 316L SS coupons and exposed for many cycles of the salt fog test. Other common engineering alloys such as 1018 carbon steel, 316L SS and Hastelloy C-22 were also tested together with the amorphous coatings. Results show that amorphous coatings are resistant to rusting in salt fog. Partial devitrification may be responsible for isolated rust spots in one of the coatings. (authors)

  18. Mixed-signal 0.18μm CMOS and SiGe BiCMOS foundry technologies for ROIC applications

    Kar-Roy, Arjun; Howard, David; Racanelli, Marco; Scott, Mike; Hurwitz, Paul; Zwingman, Robert; Chaudhry, Samir; Jordan, Scott

    2010-10-01

    Today's readout integrated-circuits (ROICs) require a high level of integration of high performance analog and low power digital logic. TowerJazz offers a commercial 0.18μm CMOS technology platform for mixed-signal, RF, and high performance analog applications which can be used for ROIC applications. The commercial CA18HD dual gate oxide 1.8V/3.3V and CA18HA dual gate oxide 1.8V/5V RF/mixed signal processes, consisting of six layers of metallization, have high density stacked linear MIM capacitors, high-value resistors, triple-well isolation and thick top aluminum metal. The CA18HA process also has scalable drain extended LDMOS devices, up to 40V Vds, for high-voltage sensor applications, and high-performance bipolars for low noise requirements in ROICs. Also discussed are the available features of the commercial SBC18 SiGe BiCMOS platform with SiGe NPNs operating up to 200/200GHz (fT/fMAX frequencies in manufacturing and demonstrated to 270 GHz fT, for reduced noise and integrated RF capabilities which could be used in ROICs. Implementation of these technologies in a thick film SOI process for integrated RF switch and power management and the availability of high fT vertical PNPs to enable complementary BiCMOS (CBiCMOS), for RF enabled ROICs, are also described in this paper.

  19. A Physics-Based Engineering Methodology for Calculating Soft Error Rates of Bulk CMOS and SiGe Heterojunction Bipolar Transistor Integrated Circuits

    Fulkerson, David E.

    2010-02-01

    This paper describes a new methodology for characterizing the electrical behavior and soft error rate (SER) of CMOS and SiGe HBT integrated circuits that are struck by ions. A typical engineering design problem is to calculate the SER of a critical path that commonly includes several circuits such as an input buffer, several logic gates, logic storage, clock tree circuitry, and an output buffer. Using multiple 3D TCAD simulations to solve this problem is too costly and time-consuming for general engineering use. The new and simple methodology handles the problem with ease by simple SPICE simulations. The methodology accurately predicts the measured threshold linear energy transfer (LET) of a bulk CMOS SRAM. It solves for circuit currents and voltage spikes that are close to those predicted by expensive 3D TCAD simulations. It accurately predicts the measured event cross-section vs. LET curve of an experimental SiGe HBT flip-flop. The experimental cross section vs. frequency behavior and other subtle effects are also accurately predicted.

  20. Spray rolling aluminum alloy strip

    McHugh, Kevin M.; Delplanque, J.-P.; Johnson, S.B.; Lavernia, E.J.; Zhou, Y.; Lin, Y

    2004-10-10

    Spray rolling combines spray forming with twin-roll casting to process metal flat products. It consists of atomizing molten metal with a high velocity inert gas, cooling the resultant droplets in flight and directing the spray between mill rolls. In-flight convection heat transfer from atomized droplets teams with conductive cooling at the rolls to rapidly remove the alloy's latent heat. Hot deformation of the semi-solid material in the rolls results in fully consolidated, rapidly solidified product. While similar in some ways to twin-roll casting, spray rolling has the advantage of being able to process alloys with broad freezing ranges at high production rates. This paper describes the process and summarizes microstructure and tensile properties of spray-rolled 2124 and 7050 aluminum alloy strips. A Lagrangian/Eulerian poly-dispersed spray flight and deposition model is described that provides some insight into the development of the spray rolling process. This spray model follows droplets during flight toward the rolls, through impact and spreading, and includes oxide film formation and breakup when relevant.