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Sample records for sic buffered si

  1. Effect of Si doping on the growth and microstructure of GaN grown on Si(1 1 1) using SiC as a buffer layer

    Science.gov (United States)

    Wang, D.; Yoshida, S.; Ichikawa, M.

    2002-07-01

    We studied the initial growth of Si-doped GaN (GaN:Si) epilayers grown under both N- and Ga-rich conditions. Upon Si doping, the surface polarity changed from N- to Ga-polarity. The surface diffusion kinetics of the Ga adatoms of the GaN:Si epilayers depended strongly on the Ga/N flux ratio. GaN:Si films with good crystal quality were obtained for a Ga/N flux ratio slightly larger than 1. The dislocation density decreased about one order of magnitude, while the stacking fault and cubic phase density near the interfacial region increased. The main types of dislocations in the undoped GaN were mixed and edge dislocations. In the GaN:Si, the main dislocations were pure-edge dislocations. The dislocation-density reduction in the GaN:Si may have been due to a low density of mixed dislocations in the presence of a high density of stacking faults and cubic phase.

  2. Polycrystalline SiC as source material for the growth of fluorescent SiC layers

    DEFF Research Database (Denmark)

    Kaiser, M.; Hupfer, T.; Jokubavicus, V.

    2013-01-01

    Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC ingots grown by the Physical Vapor Transport m...

  3. Switching Performance Evaluation of Commercial SiC Power Devices (SiC JFET and SiC MOSFET) in Relation to the Gate Driver Complexity

    DEFF Research Database (Denmark)

    Pittini, Riccardo; Zhang, Zhe; Andersen, Michael A. E.

    2013-01-01

    and JFETs. The recent introduction of SiC MOSFET has proved that it is possible to have highly performing SiC devices with a minimum gate driver complexity; this made SiC power devices even more attractive despite their device cost. This paper presents an analysis based on experimental results...... of the switching losses of various commercially available Si and SiC power devices rated at 1200 V (Si IGBTs, SiC JFETs and SiC MOSFETs). The comparison evaluates the reduction of the switching losses which is achievable with the introduction of SiC power devices; this includes analysis and considerations...

  4. Preparation of biomorphic SiC ceramics

    Directory of Open Access Journals (Sweden)

    Egelja A.

    2008-01-01

    Full Text Available This paper deals with a new method for producing non-oxide ceramic using wood as a template. SiC with a woodlike microstructure has been prepared by carbothermal reduction reactions of Tilia wood/TEOS composite at 1873K. The porous carbon preform was infiltrated with TEOS (Si(OC2H54, as a source of silica, without pressure at 298K. The morphology of resulting porous SiC ceramics, as well as the conversion mechanism of wood to SiC ceramics, have been investigated by scanning electron microscopy (SEM/EDS and X-ray diffraction analysis (XRD. Obtained SiC ceramics consists of β-SiC with traces of α-SiC.

  5. Epitaxial grapheme on SiC(0001) and SiC(000-1): a photoelectron diffraction (XPD) study

    Energy Technology Data Exchange (ETDEWEB)

    Lima, L.H.; Siervo, A.; Landers, R. [Universidade Estadual de Campinas (IFGW/UNICAMP), SP (Brazil). Inst. de Fisica Gleb Wataghin; Goncalves, A.B.; Lacerda, R.G. [Universidade Federal de Minas Gerais (UFMG), Belo Horizonte, MG (Brazil). Dept. de Fisica; Tapia, P.H. [Universidad Tecnica Federico Santa Maria, Valparaiso (Chile)

    2011-07-01

    Full text. A flat, single layer of graphite known as grapheme has become the focus of studies due to its exceptional properties and fascinating applications. Large scale grapheme layers for a possible application can be grown epitaxially on SiC by Si sublimation. Even before the interest in grapheme, the surface of SiC was already extensively studied. It exhibits a large variety of surface reconstructions and these reconstructions are very dependent of sample preparation and orientation (0001) or (000-1). In this study, we show a preliminary investigation of the structural properties of grapheme layers on SiC (0001) e SiC (000-1) by photoelectron diffraction (XPD). The surfaces were prepared by heating the 1x1 surface to temperatures of about 1150 deg C in high ultra vacuum and the various reconstructions were monitored by Low Energy Electron Diffraction (LEED) and X-Ray Photoelectron Spectroscopy (XPS). In particular for the Si-terminated surface, that is SiC(0001), the interface between grapheme and SiC is characterized by the so-called (6{radical}3 x 6{radical}3) R30 deg reconstruction (buffer layer). The interpretation of this reconstruction, which is the initial stage of graphitization, has lead to controversy in the literature. We will further discuss the buffer layer structure in terms of the XPD results. The XPD experiments were performed at SGM beam line at LNLS using photons with 400/450 eV probing the Si2p and C1s core level. The C1s signal was separate in to contributions from volume and surface and compares the experimental results with photoelectron multiple scattering calculations performed with the MSCD package

  6. Lateral boron distribution in polycrystalline SiC source materials

    DEFF Research Database (Denmark)

    Linnarsson, M. K.; Kaiser, M.; Liljedahl, R.

    2013-01-01

    Polycrystalline SiC containing boron and nitrogen are used in growth of fluorescent SiC for white LEDs. Two types of doped polycrystalline SiC have been studied in detail with secondary ion mass spectrometry: sintered SiC and poly-SiC prepared by sublimation in a physical vapor transport setup. T...

  7. Microwave joining of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Silberglitt, R.; Ahmad, I.; Tian, Y.L. [FM Technologies, Inc., Fairfax, VA (United States)] [and others

    1997-04-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on identification of the most effective joining methods for scale-up to large tube assemblies, including joining using SiC produced in situ from chemical precursors. During FY 1996, a new microwave applicator was designed, fabricated and tested that provides the capability for vacuum baking of the specimens and insulation and for processing under inert environment. This applicator was used to join continuous fiber-reinforced (CFCC) SiC/SiC composites using a polymer precursor to form a SiC interlayer in situ.

  8. Magnetism in nanocrystalline SiC films

    Science.gov (United States)

    Semenov, A. V.; Pashchenko, V. O.; Khirnyi, V. F.; Kozlovskyi, A. A.; Mateichenko, P. V.

    2015-11-01

    Magnetism been studied in two series of nanocrystalline SiC films obtained by the method of direct deposition of ions with an energy of ~100 eV at temperatures 1150 °C and 1200 C. There were separated the contributions of diamagnetism, paramagnetism and superparamagnetism+ferromagnetism. Magnetization value of the films correlates with the deposition temperature. In the films deposited at higher temperatures the value of magnetization was by 1.5 times lower. It was concluded that induced magnetism in nanocrystalline SiC films is caused by interaction of magnetic moments of neutral VSiVC divacancies in separate nanocrystals. The estimated concentration of neutral VSiVC divacancies in nanocrystalline SiC films is ~1020 cm-3.

  9. Prospects for SiC electronics and sensors

    OpenAIRE

    Nick G. Wright; Alton B. Horsfall; Vassilevski, Konstantin

    2008-01-01

    There has been substantial international research effort in the development of SiC electronics over the last ten years. With promising applications in power electronics, hostile-environment electronics, and sensors, there is considerable industrial interest in SiC as a material for electronics. However, issues relating to crystal growth and the difficulties of material processing have restricted SiC devices to relatively limited use to date. The eventual success of SiC as an electronic techno...

  10. Universal Converter Using SiC

    Energy Technology Data Exchange (ETDEWEB)

    Dallas Marckx; Brian Ratliff; Amit Jain; Matthew Jones

    2007-01-01

    The grantee designed a high power (over 1MW) inverter for use in renewable and distributed energy systems, such as PV cells, fuel cells, variable speed wind turbines, micro turbines, variable speed gensets and various energy storage methods. The inverter uses 10,000V SiC power devices which enable the use of a straight-forward topology for medium voltage (4,160VAC) without the need to cascade devices or topologies as is done in all commercial, 4,160VAC inverters today. The use of medium voltage reduces the current by nearly an order of magnitude in all current carrying components of the energy system, thus reducing size and cost. The use of SiC not only enables medium voltage, but also the use of higher temperatures and switching frequencies, further reducing size and cost. In this project, the grantee addressed several technical issues that stand in the way of success. The two primary issues addressed are the determination of real heat losses in candidate SiC devices at elevated temperature and the development of high temperature packaging for SiC devices.

  11. A porous SiC ammonia sensor

    NARCIS (Netherlands)

    Connolly, E.J.; Timmer, B.H.; Pham, H.T.M.; Groeneweg, J.; Sarro, P.M.; Olthuis, Wouter; French, P.J.

    2005-01-01

    When used as the dielectric in a capacitive sensing arrangement, porous SiC has been found to be extremely sensitive to the presence of ammonia (NH3) gas. The exact sensing method is still not clear, but NH3 levels as low as 0.5 ppm could be detected. We report the fabrication and preliminary

  12. Structure of MnSi on SiC(0001)

    Science.gov (United States)

    Meynell, S. A.; Spitzig, A.; Edwards, B.; Robertson, M. D.; Kalliecharan, D.; Kreplak, L.; Monchesky, T. L.

    2016-11-01

    We report on the growth and magnetoresistance of MnSi films grown on SiC(0001) by molecular beam epitaxy. The growth resulted in a textured MnSi(111) film with a predominantly [1 1 ¯0 ] MnSi (111 )∥[11 2 ¯0 ] SiC(0001) epitaxial relationship, as demonstrated by transmission electron microscopy, reflection high energy electron diffraction, and atomic force microscopy. The 500 ∘C temperature required to crystallize the film leads to a dewetting of the MnSi layer. Although the sign of the lattice mismatch suggested the films would be under compressive stress, the films acquire an in-plane tensile strain likely driven by the difference in thermal expansion coefficients between the film and substrate during annealing. As a result, the magnetoresistive response demonstrates that the films possess a hard-axis out-of-plane magnetocrystalline anisotropy.

  13. Vacancies in SiC nanopowders

    Energy Technology Data Exchange (ETDEWEB)

    Kityk, I.V.; Makowska-Janusik, M. [Technical Univ. of Czestochowa (Poland). Inst. of Phys.; Kassiba, A.; Charpentier, C. [Laboratoire de Physique de l' Etat Condense, UPRES-A6087, Universite du Maine, Avenue Olivier Messiaen, 72085 Cedex 9, LeMans (France); Tuesu, K. [Research Informatic Science Department, Tohoku University, 2-1-4 Katahira, Aoba-ku, 982-12, Sendai (Japan); Ling, Y. [Michigan Molecular Institute, 48640, Midland, MI (United States)

    2000-08-31

    Origin of vacancies in the large-sized SiC nanocrystals (higher than 10 nm) has been investigated using theoretical band structure calculations and experimental electronic paramagnetic resonance (EPR) measurements. Influence of geometry sizes on appearance of concrete vacancy has been studied. The theoretical approach includes self-consistent norm-conserving pseudopotential band energy calculations and geometry structure optimisation. The performed calculations show that the presence of the vacancies is a necessary attribute of the SiC nanocrystallites. Moreover, the type and concentration of the vacancies are dependent on the nanoparticle geometry. We have revealed that spin-polarised states of intracrystallite vacancies differ essentially from vacancies in the bulk crystals. A comparison between the performed theoretical simulations and obtained EPR experimental data shows the possibility of using the proposed methods for prediction of vacancy appearance in the binary nanocrystallites and possibility for their operation. (orig.)

  14. Grafted SiC nanocrystals

    DEFF Research Database (Denmark)

    Saini, Isha; Sharma, Annu; Dhiman, Rajnish

    2017-01-01

    ), raman spectroscopy and X-ray diffraction (XRD) measurements. UV–Visible absorption spectroscopy was used to study optical properties such as optical energy gap (Eg), Urbach's energy (Eu), refractive index (n), real (ε1) and imaginary (ε2) parts of dielectric constant of PVA as well as PVA......) were determined. Microhardness measurements performed at an applied load of 9.8 mN showed an increase in the Knoop microhardness number (KHN) of PVA containing 0.015 wt% PVA-g-SiC nanocrystals. Detailed analysis of current-voltage data indicates that the conduction mechanism responsible for increase...

  15. Detection and analysis of particles with failed SiC in AGR-1 fuel compacts

    Energy Technology Data Exchange (ETDEWEB)

    Hunn, John D., E-mail: hunnjd@ornl.gov [Oak Ridge National Laboratory (ORNL), P.O. Box 2008, Oak Ridge, TN 37831-6093 (United States); Baldwin, Charles A.; Gerczak, Tyler J.; Montgomery, Fred C.; Morris, Robert N.; Silva, Chinthaka M. [Oak Ridge National Laboratory (ORNL), P.O. Box 2008, Oak Ridge, TN 37831-6093 (United States); Demkowicz, Paul A.; Harp, Jason M.; Ploger, Scott A. [Idaho National Laboratory (INL), P.O. Box 1625, Idaho Falls, ID 83415-6188 (United States)

    2016-09-15

    Highlights: • Cesium release was used to detect SiC failure in HTGR fuel. • Tristructural-isotropic particles with SiC failure were isolated by gamma screening. • SiC failure was studied by X-ray tomography and SEM. • SiC degradation was observed after irradiation and subsequent safety testing. - Abstract: As the primary barrier to release of radioactive isotopes emitted from the fuel kernel, retention performance of the SiC layer in tristructural isotropic (TRISO) coated particles is critical to the overall safety of reactors that utilize this fuel design. Most isotopes are well-retained by intact SiC coatings, so pathways through this layer due to cracking, structural defects, or chemical attack can significantly contribute to radioisotope release. In the US TRISO fuel development effort, release of {sup 134}Cs and {sup 137}Cs are used to detect SiC failure during fuel compact irradiation and safety testing because the amount of cesium released by a compact containing one particle with failed SiC is typically ten or more times higher than that released by compacts without failed SiC. Compacts with particles that released cesium during irradiation testing or post-irradiation safety testing at 1600–1800 °C were identified, and individual particles with abnormally low cesium retention were sorted out with the Oak Ridge National Laboratory (ORNL) Irradiated Microsphere Gamma Analyzer (IMGA). X-ray tomography was used for three-dimensional imaging of the internal coating structure to locate low-density pathways through the SiC layer and guide subsequent materialography by optical and scanning electron microscopy. All three cesium-releasing particles recovered from as-irradiated compacts showed a region where the inner pyrocarbon (IPyC) had cracked due to radiation-induced dimensional changes in the shrinking buffer and the exposed SiC had experienced concentrated attack by palladium; SiC failures observed in particles subjected to safety testing were

  16. SiC Power MOSFET with Improved Gate Dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Sbrockey, Nick M; Tompa, Gary S; Spencer, Michael G; Chandrashekhar, Chandra MVS

    2010-08-23

    In this STTR program, Structured Materials Industries (SMI), and Cornell University are developing novel gate oxide technology, as a critical enabler for silicon carbide (SiC) devices. SiC is a wide bandgap semiconductor material, with many unique properties. SiC devices are ideally suited for high-power, highvoltage, high-frequency, high-temperature and radiation resistant applications. The DOE has expressed interest in developing SiC devices for use in extreme environments, in high energy physics applications and in power generation. The development of transistors based on the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure will be critical to these applications.

  17. Electron Spectroscopy Study of SiC,

    Science.gov (United States)

    1983-09-01

    Liquid nitrogen cooling is supplied to the central copper block of the sample holder by flexible spiral stainless steel capillary. This cooling facility...sapphire disks from thinner copper blocks at both sides. The outer copper blocks hold 1.5 mm diameter W rods to which are welded a pair of 0.375 mm...sputtering was sufficient to implant F+ and Ar+ ions deep enough in the SiC surface layer, so that the implanted F and Ar could not be removed-by thermal

  18. Concentration, chemical bonding, and etching behavior of P and N at the SiO2/SiC(0001) interface

    Science.gov (United States)

    Xu, Y.; Xu, C.; Liu, G.; Lee, H. D.; Shubeita, S. M.; Jiao, C.; Modic, A.; Ahyi, A. C.; Sharma, Y.; Wan, A.; Williams, J. R.; Gustafsson, T.; Dhar, S.; Garfunkel, E. L.; Feldman, L. C.

    2015-12-01

    Phosphorous and nitrogen are electrically active species at the SiO2/SiC interface in SiC MOSFETs. We compare the concentration, chemical bonding, and etching behavior of P and N at the SiO2/SiC(0001) interface using photoemission, ion scattering, and secondary ion mass spectrometry. Both interfacial P and N are found to be resistant to buffered HF solution etching at the SiO2/SiC(0001) interface while both are completely removed from the SiO2/Si interface. The medium energy ion scattering results of etched phosphosilicate glass/SiC not only provide an accurate coverage but also indicate that both the passivating nitrogen and phosphorus are confined to within 0.5 nm of the interface. Angle resolved photoemission shows that P and N are likely situated in different chemical environments at the interface. We conclude that N is primarily bound to Si atoms at the interface while P is primarily bound to O and possibly to Si or C. Different interface passivating element coverages and bonding configurations on different SiC crystal faces are also discussed. The study provides insights into the mechanisms by which P and N passivate the SiO2/SiC(0001) interface and hence improve the performance of SiC MOSFETs.

  19. Synthesis of biomorphic SiC ceramic from bamboo charcoal.

    Science.gov (United States)

    Zhu, Jiangtao; Kwong, Fung Luen; Ng, Dickon Hang Leung

    2009-02-01

    Biomorphic SiC ceramic was successfully synthesized by reaction sintering between bamboo charcoal and a Si/SiO2 powder mixture. The charcoal was converted into an entirely SiC ceramic inherited with the original bamboo structure. Samples were characterized according to their crystallinity, morphology, microstructures and pore structures. We found that various morphological SiC structures were formed in different parts of the charcoal which depended on the morphology of the textures. The length of SiC nanowires were up to micron size. They were grown in the direction. The number of micropores in the converted biomorphic SiC was less than the original bamboo charcoal, but the pore diameter was larger.

  20. Synthesis of micro-sized interconnected Si-C composites

    Science.gov (United States)

    Wang, Donghai; Yi, Ran; Dai, Fang

    2016-02-23

    Embodiments provide a method of producing micro-sized Si--C composites or doped Si--C and Si alloy-C with interconnected nanoscle Si and C building blocks through converting commercially available SiO.sub.x (0

  1. Structural characterization of SiC nanoparticles

    Science.gov (United States)

    Sun, Baoxing; Xie, Ruobing; Yu, Cun; Li, Cheng; Xu, Hongjie

    2017-10-01

    The structure and size of SiC nanoparticles were studied by different characterization methods including small angle X-ray scattering (SAXS), transmission electron microscope (TEM), and X-ray diffraction (XRD). The results showed that particle size distributions determined respectively from SAXS and TEM are comparable and follow the log-normal function. The size distribution of the particles is between 10 to 100 nm with most of them being in the range of 20–50 nm. The average particle size is around 42 nm. XRD identifies the phase of the SiC nanoparticles and suggests the average size of the single crystalline domain to be around 21 nm. The combined results from XRD and SAXS suggest the existence of many polycrystals, which is confirmed by the HRTEM observation of particles with twins and stacking faults. The material synthesis methods leading to various particle sizes are also discussed. Project supported by the National Natural Science Foundation of China (No. 11505273) and the Strategic Priority Research Program of the Chinese Academy of Sciences (No. XDA02000000).

  2. Processing of sintered alpha SiC

    Science.gov (United States)

    Storm, R. S.

    1984-01-01

    Processing methods of sintered alpha SiC for engine applications are developed in a cost effective manner, using a submicron sized powder blended with sintering aids (boron and carbon). The processes for forming a green powder compact, such as dry pressing, cold isostatic pressing and green machining, slip casting, aqueous extrusion, plastic extrusion, and injection molding, are described. Dry pressing is the simplest route to component fabrication, and is carried out at approximately 10,000 psi pressure, while in the cold isostatic method the pressure could go as high as 20,000 psi. Surfactants are added to control settling rates and casting characteristics in the slip casting. The aqueous extrusion process is accomplished by a hydraulic ram forcing the aqueous mixture through a die. The plastic forming processes of extrusion and injection molding offer the potential of greater diversity in shape capacity. The physical properties of sintered alpha SiC (hardness, Young's modulus, shear modulus, and thermal diffusivity) are extensively tested. Corrosion resistance test results of silicon carbide are included.

  3. 500?C SiC JFET Driver Circuits and Packaging Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In the proposed development, SiC JFET control circuitry and normally-off SiC JFET power switch will be integrated in a single SiC chip that will provide digital...

  4. In situ growth of SiC nanowires on RS-SiC substrate(s)

    Science.gov (United States)

    Yang, Wen; Araki, Hiroshi; Hu, Quanli; Ishikawa, Nobuhiro; Suzuki, Hiroshi; Noda, Tetsuji

    2004-03-01

    SiC nanowires over 10 μm in length and 20-100 nm in diameter have been synthesized by a novel in situ chemical vapor growth process on RS-SiC plates. The SiC nanowires were identified as single crystal β-SiC with Si-C chemistry. The growth direction of the nanowires is . The growth mechanism is discussed and a kinetic vapor-solid growth mechanism is proposed. The process demonstrates the possibility to fabricate SiC nanowires in ceramic matrix composites, such as continuous SiC fibers reinforced SiC matrix composites, with the SiC nanowires uniformly dispersed in the matrix.

  5. Advances in wide bandgap SiC for optoelectronics

    DEFF Research Database (Denmark)

    Ou, Haiyan; Ou, Yiyu; Argyraki, Aikaterini

    2014-01-01

    Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication...

  6. Low dose irradiation performance of SiC interphase SiC/SiC composites

    Science.gov (United States)

    Snead, L. L.; Osborne, M. C.; Lowden, R. A.; Strizak, J.; Shinavski, R. J.; More, K. L.; Eatherly, W. S.; Bailey, J.; Williams, A. M.

    1998-03-01

    Reduced oxygen Hi-Nicalon™ fiber reinforced composite SiC materials were densified with a chemically vapor infiltrated (CVI) silicon carbide (SiC) matrix and interphases of either `porous' SiC or multilayer SiC and irradiated to a neutron fluence of 1.1×10 25 n m -2 ( E>0.1 MeV) in the temperature range of 260 to 1060°C. The unirradiated properties of these composites are superior to previously studied ceramic grade Nicalon fiber reinforced/carbon interphase materials. Negligible reduction in the macroscopic matrix microcracking stress was observed after irradiation for the multilayer SiC interphase material and a slight reduction in matrix microcracking stress was observed for the composite with porous SiC interphase. The reduction in strength for the porous SiC interfacial material is greatest for the highest irradiation temperature. The ultimate fracture stress (in four point bending) following irradiation for the multilayer SiC and porous SiC interphase materials was reduced by 15% and 30%, respectively, which is an improvement over the 40% reduction suffered by irradiated ceramic grade Nicalon fiber materials fabricated in a similar fashion, though with a carbon interphase. The degradation of the mechanical properties of these composites is analyzed by comparison with the irradiation behavior of bare Hi-Nicalon fiber and Morton chemically vapor deposited (CVD) SiC. It is concluded that the degradation of these composites, as with the previous generation ceramic grade Nicalon fiber materials, is dominated by interfacial effects, though the overall degradation of fiber and hence composite is reduced for the newer low-oxygen fiber.

  7. Compatibility of SiC and SiC Composites with Molten Lead

    Energy Technology Data Exchange (ETDEWEB)

    H Tunison

    2006-03-07

    The choice of structural material candidates to contain Lead at 1000 C are limited in number. Silicon carbide composites comprise one choice of possible containment materials. Short term screening studies (120 hours) were undertaken to study the behavior of Silicon Carbide, Silicon Nitride, elemental Silicon and various Silicon Carbide fiber composites focusing mainly on melt infiltrated composites. Isothermal experiments at 1000 C utilized graphite fixtures to contain the Lead and material specimens under a low oxygen partial pressure environment. The corrosion weight loss values (grams/cm{sup 2} Hr) obtained for each of the pure materials showed SiC (monolithic CVD or Hexoloy) to have the best materials compatibility with Lead at this temperature. Increased weight loss values were observed for pure Silicon Nitride and elemental Silicon. For the SiC fiber composite samples those prepared using a SiC matrix material performed better than Si{sub 3}N{sub 4} as a matrix material. Composites prepared using a silicon melt infiltration process showed larger corrosion weight loss values due to the solubility of silicon in lead at these temperatures. When excess silicon was removed from these composite samples the corrosion performance for these material improved. These screening studies were used to guide future long term exposure (both isothermal and non-isothermal) experiments and Silicon Carbide composite fabrication work.

  8. Irradiation damage of SiC semiconductor device (I)

    Energy Technology Data Exchange (ETDEWEB)

    Park, Ji Yeon; Kim, Weon Ju

    2000-09-01

    This report reviewed the irradiation damage of SiC semiconductor devices and examined a irradiation behavior of SiC single crystal as a pre-examination for evaluation of irradiation behavior of SiC semiconductor devices. The SiC single was crystal irradiated by gamma-beam, N+ ion and electron beam. Annealing examinations of the irradiated specimens also were performed at 500 deg C. N-type 6H-SiC dopped with N+ ion was used and irradiation doses of gamma-beam, N+ion and electron beam were up to 200 Mrad, 1x10{sup 16} N{sup +} ions/cm{sup 2} and 3.6 x 10{sup 17} e/cm{sup 2} and 1.08 x 10{sup 18} e/cm{sup 2} , respectively. Irradiation damages were analyzed by the EPR method. Additionally, properties of SiC, information about commercial SiC single crystals and the list of web sites with related to the SiC device were described in the appendix.

  9. Microwave joining of SiC ceramics and composites

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, I.; Silberglitt, R.; Tian, Y.L. [FM Technologies, Inc., Fairfax, VA (United States); Katz, J.D. [Los Alamos National Lab., NM (United States)

    1997-04-01

    Potential applications of SiC include components for advanced turbine engines, tube assemblies for radiant burners and petrochemical processing and heat exchangers for high efficiency electric power generation systems. Reliable methods for joining SiC are required in order to cost-effectively fabricate components for these applications from commercially available shapes and sizes. This manuscript reports the results of microwave joining experiments performed using two different types of SiC materials. The first were on reaction bonded SiC, and produced joints with fracture toughness equal to or greater than that of the base material over an extended range of joining temperatures. The second were on continuous fiber-reinforced SiC/SiC composite materials, which were successfully joined with a commercial active brazing alloy, as well as by using a polymer precursor.

  10. Polymer precursors for SiC ceramic materials

    Science.gov (United States)

    Litt, Morton H.

    1986-01-01

    Work on precursor polymers to SiC was performed, concentrating on polymers made from decamethyl cyclohexasilyene units. The initial approach was to synthesize mixed diphenyl decamethyl cyclohexasilane, dephenylate, and polymerize. This produced polymers which had yields of up to 50 percent SiC. (Theoretical yield is 75 percent). The present approach is to make the polymer through the intermediate trans-1,4-diphenyl decamethyl cyclohexasilane. This should produce a crystalline polymer and high strength fibers. These will be thermally decomposed to SiC fibers. This requires new chemistry which is currently being studied.

  11. Detail study of SiC MOSFET switching characteristics

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig

    2014-01-01

    This paper makes detail study of the latest SiC MOSFETs switching characteristics in relation to gate driver maximum current, gate resistance, common source inductance and parasitic switching loop inductance. The switching performance of SiC MOSFETs in terms of turn on and turn off voltage...... and current are presented. Switching losses analysis is made according to the experiment results. The switching characteristics study and switching losses analysis could give some guidelines of gate driver IC and gate resistance selection, switching losses estimation and circuit design of SiC MOSFETs....

  12. Challenges in Switching SiC MOSFET without Ringing

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig

    2014-01-01

    Switching SiC MOSFET without ringing in high frequency applications is important for meeting the EMI (ElectroMagnetic Interference) standard. Achieving a clean switching waveform of SiC MOSFET without additional components is becoming a challenge. In this paper, the switching oscillation mechanism...... is analysed in detail. According to the analysis, the optimal circuit design to minimize the parasitic parametric is introduced for a clean switching waveform. Experiment results show the clean switching waveform of SiC MOSFET. Guidelines are established for circuit design....

  13. SPHERICAL INDENTATION OF SiC

    Energy Technology Data Exchange (ETDEWEB)

    Wereszczak, Andrew A [ORNL; Johanns, Kurt E [ORNL

    2007-01-01

    Instrumented Hertzian indentation testing was performed on several grades of SiCs and the results and preliminary interpretations are presented. The grades included hot-pressed and sintered compositions. One of the hot-pressed grades was additionally subjected to high temperature heat treatment to produce a coarsened grain microstructure to enable the examination of exaggerated grain size on indentation response. Diamond spherical indenters were used in the testing. Indentation load, indentation depth of penetration, and acoustic activity were continually measured during each indentation test. Indentation response and postmortem analysis of induced damage (e.g., ring/cone, radial and median cracking, quasi-plasticity) are compared and qualitatively as a function of grain size. For the case of SiC-N, the instrumented spherical indentation showed that yielding initiated at an average contact stress 12-13 GPa and that there was another event (i.e., a noticeable rate increase in compliance probably associated with extensive ring and radial crack formations) occurring around an estimated average contact stress of 19 GPa.

  14. Characteristics of Commercial SiC and Synthetic SiC as an Aggregate in Geopolymer Composites

    Science.gov (United States)

    Irfanita, R.; Afifah, K. N.; Asrianti; Subaer

    2017-03-01

    This main objective of this study is to investigate the effect silicon carbide (SiC) as an aggregate on the mechanical strength and microstructure of the geopolymer composites. The geopolymers binder were produced by using alkaline activation method of metakaolin and cured at 70oC for 2 hours. In this study commercial and synthetic SiC were used as aggregate to produce composite structure. Synthetic SiC was produced from rice husk ash and coconut shell carbon calcined at 750oC for 2 hours. The addition of SiC in geopolymers paste was varied from 0.25g, 0.50g to 0.75g to form geopolymers composites. The chemical compositions and crystallinity level of SiC and the resulting composites were measured by means of Rigaku MiniFlexII X-Ray Diffraction (XRD). The microstructure of SiC and the composites were examined by using Tescan Vega3SB Scanning Electron Microscopy (SEM). The physical and mechanical properties of the samples were determined based on apparent porosity, bulk density, and three bending flexural strength measurements. The results showed that the commercial and synthetic SiC were effectively produced geopolymers composites with different microstructure, physical and mechanical strength.

  15. Fabrication of SiC mat by radiation processing

    Science.gov (United States)

    Kang, Phil-Hyun; Jeun, Joon-Pyo; Seo, Dong-Kwon; Nho, Young-Chang

    2009-07-01

    Silicon carbide (SiC) exhibits many important properties, such as high intrinsic strength, stiffness, and high temperature stability. Therein, it is considered to be one of the most promising candidates for reinforcement of advanced ceramic matrix composites. The use of preceramic polymers presents the possibility of solving the intricacies involved in obtaining a new generation of ceramic materials. In this study, a radiation processing method was used to fabricate a cured polycarbosilane mat as a preceramic polymer. The polycarbosilane mat was cured by electron beam (e-beam) irradiation up to 10 MGy in an inert gas atmosphere. Next, the e-beam-cured PCS mat, as green fiber, was carbonized to produce the SiC mat. The conversion process of the PCS mat into the SiC mat was investigated by SEM, FT-IR, XRD, and TGA. According to FT-IR analysis, the Si-H peak intensity was observed to decrease as the polymer structure changed from polycarbosilane to SiC. The XRD patterns of SiC showed the diffraction peaks at (1 1 1), (2 2 0), and (3 1 1) which indicated the emergence of β-SiC. TGA curve shows that weight percent of residue of electrospun PCS mat, e-beam-cured PCS mat and pyrolyzed SiC mat up to 1000 °C were 72.5%, 88.3%, and 99.2%, respectively.

  16. Thermochemistry and growth mechanism of SiC nanowires

    Science.gov (United States)

    Chen, Jianjun; Ding, Lijuan; Xin, Lipeng; Zeng, Fan; Chen, Jun

    2017-09-01

    The chemical reaction thermodynamics and a novel two-stage growth mechanism of SiC nanowires synthesized by carbothermal reduction reactions were investigated based on the Si-C-O systems over a wide temperature range (1050 ≤ T ≤ 2000 K). The carbothermal reduction reaction process involves the fast formation of gaseous SiO and CO crucial intermediates, and the further carbon reduction of SiO to SiC. The relationship between the free energy changes and temperature at different pressures was also discussed. Some fundamental data in the work can help to analyze the thermochemistry of the carbothermal reduction reaction in the Si-C-O system, which is beneficial to optimize the temperature, pressure and the input precursors for controlling the SiC nanowire growth.

  17. SiC MOSFETs based split output half bridge inverter

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig; Beczkowski, Szymon

    2014-01-01

    . This paper makes the current commutation mechanism and efficiency analysis of half bridge with split output based on SiC MOSFETs. Current commutation process analysis is illustrated together with LTspice simulation and afterwards, verified by the experimental results of a double pulse test circuit with split......Body diode of SiC MOSFETs has a relatively high forward voltage drop and still experiences reverse recovery phenomenon. Half bridge with split output aims to decouple both the body diode and junction capacitance of SiC MOSFETs, therefore achieving a reduced switching loss in a bridge configuration...... output. The double pulse test shows the devices' current during commutation process and the reduced switching losses of SiC MOSFETs compared to that of the traditional half bridge. The efficiency comparison is presented with experimental results of half bridge power inverter with split output...

  18. Development of SiC Large Tapered Crystal Growth

    Science.gov (United States)

    Neudeck, Phil

    2011-01-01

    Research Focus Area: Power Electronics, Temperature Tolerant Devices. Demonstrate initial feasibility of totally new "Large Tapered Crystal" (LTC) process for growing vastly improved large-diameter wide-band gap wafers. Addresses Targets: The goal of this research is to experimentally investigate and demonstrate feasibility of the key unproven LTC growth processes in SiC. Laser-assisted growth of long SiC fiber seeds. Radial epitaxial growth enlargement of seeds into large SiC boules. Uniqueness and Impacts open a new technology path to large-diameter SiC and GaN wafers with 1000-fold defect density improvement at 2-4 fold lower cost. Leapfrog improvement in wide band gap power device capability and cost.

  19. SiC Avalanche Photodiodes and Arrays Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Aymont Technology, Inc. (Aymont) will demonstrate the feasibility of SiC p-i-n avalanche photodiodes (APD) arrays. Aymont will demonstrate 4 x 4 arrays of 2 mm2 APDs...

  20. SiC power MOSFETs performance, robustness and technology maturity

    OpenAIRE

    Castellazzi, Alberto; Fayyaz, Asad; Romano, G; Yang, Li; Riccio, M.; Irace, A.

    2016-01-01

    Relatively recently, SiC power MOSFETs have transitioned from being a research exercise to becoming an industrial reality. The potential benefits that can be drawn from this technology in the electrical energy conversion domain have been amply discussed and partly demonstrated. Before their widespread use in the field, the transistors need to be thoroughly investigated and later validated for robustness and longer term stability and reliability. This paper proposes a review of commercial SiC ...

  1. Excimer laser assisted chemical machining of SiC ceramic

    Science.gov (United States)

    Hibi, Yuko; Enomoto, Yuji; Kikuchi, Kaoru; Shikata, Nobuo; Ogiso, Hisato

    1995-02-01

    A highly effective method of machining ceramic has been newly developed using a krypton fluoride (KrF) excimer laser with a 248 nm wavelength. The laser was irradiated on SiC in water to form a soft hydrous oxide layer by photochemical reaction. The softened layer was then cut with a diamond tool to form a mirror surface finish. The optimum conditions were found for both high machining rate and better surface integrity of SiC.

  2. Amorphization of SiC under ion and neutron irradiation

    Science.gov (United States)

    Snead, L. L.; Zinkle, S. J.; Hay, J. C.; Osborne, M. C.

    1998-05-01

    This paper presents results on the microstructure and physical properties of SiC amorphized by both ion and neutron irradiation. Specifically, 0.56 MeV Si ions have been implanted in single crystal 6H-SiC from ambient through >200°C and the critical threshold for amorphization was measured as a function of the irradiation temperature. From a high resolution transmission electron microscopy (HRTEM) study of the crystalline to amorphous transition region in these materials, elongated pockets of amorphous material oriented parallel to the free surface are observed. Single crystal 6H-SiC and hot pressed and sintered 6H and 3C SiC were neutron irradiated at approximately 70°C to a dose of ˜2.56 dpa causing complete amorphization. Property changes resulting from the crystal to amorphous transition in SiC include a density decrease of 10.8%, a hardness decrease from 38.7 to 21.0 GPa, and a decrease in elastic modulus from 528 to 292 GPa. Recrystallization of the amorphized, single crystal 6H-SiC appears to occur in two stages. In the temperature range of ˜800-1000°C, crystallites nucleate and slowly grow. In the temperature range of 1125-1150°C spontaneous nucleation and rapid growth of crystallites occur. It is further noted that amorphized 6H (alpha) SiC recrystallizes to highly faulted fcc (beta) SiC.

  3. Effect of SiC particle addition on microstructure of Mg2Si/Al composite

    Directory of Open Access Journals (Sweden)

    Zhao Yuguang

    2014-03-01

    Full Text Available In the present study, by adding SiC particles into Al-Si-Mg melt, Mg2Si and SiC particles hybrid reinforced Al matrix composites were fabricated through the Mg2Si in situ synthesis in melt combined with the SiC ex situ stir casting. The as-cast microstructure containing primary Mg2Si and SiC particles that distribute homogenously in Al matrix was successfully achieved. The effects of SiC particle addition on the microstructure of Mg2Si/Al composites were investigated by using scanning electron microscopy (SEM and XRD. The results show that, with increasing the fraction of the SiC particles from 5wt.% to 10wt.%, the morphologies of the primary Mg2Si particulates in the prepared samples remain polygonal, but the size of the primary phase decreases slightly. However, when the SiC particle addition reaches 15wt.%, the morphologies of the primary Mg2Si particulates change partially from polygonal to quadrangular with a decrease in size from 50 μm to 30 μm. The size of primary Al dendrites decreases with increasing fraction of the SiC particles from 0wt.% to 15wt.%. The morphology of the eutectic Mg2Si phase changes from a fiber-form to a short fiber-form and/or a dot-like shape with increasing fraction of the SiC particles. Furthermore, no significant change in dendrite arm spacing (DAS was observed in the presence of SiC particles.

  4. Low Temperature Photoluminescence of 6H fluorescent SiC

    DEFF Research Database (Denmark)

    Wei, Yi; Künecke, Ulrike; Jokubavicius, Valdas

    We have presented the low temperature photoluminescence (PL) measurements of three 6H fluorescent Silicon Carbide (f-SiC) samples. The epilayers of the f-SiC samples were nitrogenboron co-doped and grown by fast sublimation growth process (FSGP) method on the bulk 6H SiC substrates. The doping...

  5. Simulations of Proton Implantation in Silicon Carbide (SiC)

    Science.gov (United States)

    2016-03-31

    philip.feng@case.edu Abstract: We report on exploratory research effort with preliminary results on investigating fundamental radiation effects in...of implanting protons (hydrogen ions, H+) into SiC thin layers on silicon (Si) substrate, and explore the ion implantation conditions that are...create SiC-on-insulator (SiC-on-SiO2) films and structures [4,5]. It is important to understand and control the implantation depth. Presented here

  6. Study of indentation induced cracks in MoSi2-reaction bonded SiC ...

    Indian Academy of Sciences (India)

    Unknown

    SiC ceramics. O P CHAKRABARTI*, P K DAS and S MONDAL. Central Glass and Ceramic Research Institute, Kolkata 700 032, India. Abstract. MoSi2–RBSC composite samples were prepared by infiltration of Si–2 at.% Mo melt into a preform of commercial SiC and petroleum coke powder. The infiltrated sample had a ...

  7. Status and Prospects of SiC Power Devices

    Science.gov (United States)

    Bakowski, Mietek

    Silicon Carbide (SiC) power devices offer significant benefits of improved efficiency, dynamic performance and reliability of electronic and electric systems. The challenges and prospects of SiC power device development are reviewed considering different device types. A close correlation between an exponential increase of current handling capability during the last ten years and improvement in substrate quality is demonstrated. The voltage range of silicon and SiC unipolar and bipolar power devices with respect to the on-state voltage is determined based on device simulations. 4H-SiC unipolar devices are potentially superior to all silicon devices up to 5kV design voltage and to all SiC bipolar devices up to 5-6kV design voltage for temperatures up to 150°C. The low end of SiC unipolar devices is determined to be around 200V design voltage provided substrate resistance is reduced by reducing the thickness of the substrate down to 100μm. The influence of reduced channel mobility on the specific on-resistance of 4H-SiC and 3C-SiC DMOSFETs is shown. It has been demonstrated that 3C-SiC DMOSFETs could be a better choice compared to 4H-SiC DMOSFETs in the voltage range below 1.2kV utilising better channel mobility and larger substrate size obtainable in the near future in 3C-SiC polytype. An impact of the super junction (SJ) concept on silicon and SiC MOSFET specific on-resistance limits is demonstrated.

  8. SiC device development for high temperature sensor applications

    Science.gov (United States)

    Shor, J. S.; Goldstein, David; Kurtz, A. D.; Osgood, R. M.

    1992-01-01

    Progress made in the processing and characterization of 3C-SiC for high temperature sensor applications is reviewed. Piezoresistance properties of silicon carbide and the temperature coefficient of resistivity of n-type beta-SiC are presented. In addition, photoelectrical etching and dopant selective etch-stops in SiC and high temperature Ohmic contacts for n-type beta-SiC sensors are discussed.

  9. Research on SiC Whisker Prepared by H-PSO

    Directory of Open Access Journals (Sweden)

    WANG Yao

    2017-10-01

    Full Text Available SiC whiskers were prepared on the matrix of graphite by using high hydrogenous silicone oil(PSO as raw material. The effect of surface conditions of graphite and heating temperature on the growth of SiC whisker was mainly studied in this paper. The main factor which affects the nucleation and growth of SiC whisker is the heating temperature, with the heating temperature rising, the production of SiC whisker increases. The surface condition of graphite matrix also influences the growth of SiC whisker. With the nucleation points provided by graphite matrix defects increasing, the production of SiC whisker incleases and SiC whisker starts to overlap with each other. The formation process of SiC whisker includes two steps:nucleation and growth. SiC whisker nucleates at low temperature and grows at high temperature, which follows the VLS (vapor-liquid-solid growth mechanism.

  10. Interfacial Charge States in Graphene on SiC Studied by Noncontact Scanning Nonlinear Dielectric Potentiometry.

    Science.gov (United States)

    Yamasue, Kohei; Fukidome, Hirokazu; Funakubo, Kazutoshi; Suemitsu, Maki; Cho, Yasuo

    2015-06-05

    We investigate pristine and hydrogen-intercalated graphene synthesized on a 4H-SiC(0001) substrate by using noncontact scanning nonlinear dielectric potentiometry (NC-SNDP). Permanent dipole moments are detected at the pristine graphene-SiC interface. These originate from the covalent bonds of carbon atoms of the so-called buffer layer to the substrate. Hydrogen intercalation at the interface eliminates these covalent bonds and the original quasi-(6×6) corrugation, which indicates the conversion of the buffer layer into a second graphene layer by the termination of Si bonds at the interface. NC-SNDP images suggest that a certain portion of the Si dangling bonds remains even after hydrogen intercalation. These bonds are thought to act as charged impurities reducing the carrier mobility in hydrogen-intercalated graphene on SiC.

  11. Supernova Reverse Shocks and SiC Growth

    OpenAIRE

    Deneault, E. A. -N.; Clayton, D. D.; Heger, A.

    2003-01-01

    We present new mechanisms by which the isotopic compositions of X-type grains of presolar SiC are altered by reverse shocks in Type II supernovae. We address three epochs of reverse shocks: pressure wave from the H envelope near t = 10$^6$s; reverse shock from the presupernova wind near 10$^8-10^9$s; reverse shock from the ISM near 10$^{10}$s. Using 1-D hydrodynamics we show that the first creates a dense shell of Si and C atoms near 10$^6$s in which the SiC surely condenses. The second rever...

  12. ELID grinding of SiC ultra lightweight mirror

    Science.gov (United States)

    Eto, Hiroaki; Dai, Yutang; Ebizuka, Noboru; Saito, Yasutaka; Suzuki, Toru; Lin, Weimin; Ohmori, Hitoshi; Ebisuzaki, Toshikazu; Takami, Hideki

    2017-11-01

    Silicon carbide (SiC) is the most advantageous as the material of various telescope mirrors, because SiC has high stiffness, high thermal conductivity, low thermal expansion and low density and so on [1] [2]. However, since SiC is very hard, it is difficult to obtain the surfaces efficiently by using ordinary grinding method. Therefore, we developed the ultra lightweight mirror by ELID (ELectrolytic In-process Dressing) grinding method and ultra-precision grinding machine. ELID grinding method is the new grinding technology which one of authors invented, produces the quality of the high surface efficiently, and is effective in processing of a very hard material, such as crystalline silicon and sapphire, ceramics, glasses, hard metals and so on. SiC mirror for space telescope is designed as regular polygon rib structures in the rear face for reducing weight, and both the optical face and the backside ribs are so thin that deformation of the mirror cannot disregard. Therefore, in order to feed back deformation of the mirror to the orbit of grinding wheel, it is necessary to analyze deformation. In this research, we present the results which fabricated mirrors of sintered SiC by the ELID grinding method, the numerical calculation results of the profile deformations analyzed by FEM, and new jig for Φ360mm a mirror.

  13. Joining of SiC ceramics and SiC/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Rabin, B.H. [Idaho National Engineering Lab., Idaho Falls, ID (United States)

    1995-08-01

    This project has successfully developed a practical and reliable method for fabricating SiC ceramic-ceramic joints. This joining method has the potential to facilitate the use of SiC-based ceramics in a variety of elevated temperature fossil energy applications. The technique is based on a reaction bonding approach that provides joint interlayers compatible with SiC, and excellent joint mechanical properties at temperatures exceeding 1000{degrees}C. Recent efforts have focused on transferring the joining technology to industry. Several industrial partners have been identified and collaborative research projects are in progress. Investigations are focusing on applying the joining method to sintered a-SiC and fiber-reinforced SiC/SiC composites for use in applications such as heat exchangers, radiant burners and gas turbine components.

  14. Joining of SiC ceramics and SiC/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Rabin, B.H. [Idaho National Engineering Lab., Idaho Falls, ID (United States)

    1996-08-01

    This project has successfully developed a practical and reliable method for fabricating SiC ceramic-ceramic joints. This joining method will permit the use of SiC-based ceramics in a variety of elevated temperature fossil energy applications. The technique is based on a reaction bonding approach that provides joint interlayers compatible with SiC, and excellent joint mechanical properties at temperatures exceeding 1000{degrees}C. Recent emphasis has been given to technology transfer activities, and several collaborative research efforts are in progress. Investigations are focusing on applying the joining method to sintered {alpha}-SiC and fiber-reinforced SiC/SiC composites for use in applications such as heat exchangers, radiant burners and gas turbine components.

  15. Rare earth element abundances in presolar SiC

    Science.gov (United States)

    Ireland, T. R.; Ávila, J. N.; Lugaro, M.; Cristallo, S.; Holden, P.; Lanc, P.; Nittler, L.; Alexander, C. M. O'D.; Gyngard, F.; Amari, S.

    2018-01-01

    Individual isotope abundances of Ba, lanthanides of the rare earth element (REE) group, and Hf have been determined in bulk samples of fine-grained silicon carbide (SiC) from the Murchison CM2 chondrite. The analytical protocol involved secondary ion mass spectrometry with combined high mass resolution and energy filtering to exclude REE oxide isobars and Si-C-O clusters from the peaks of interest. Relative sensitivity factors were determined through analysis of NIST SRM reference glasses (610 and 612) as well as a trace-element enriched SiC ceramic. When normalised to chondrite abundances, the presolar SiC REE pattern shows significant deficits at Eu and Yb, which are the most volatile of the REE. The pattern is very similar to that observed for Group III refractory inclusions. The SiC abundances were also normalised to s-process model predictions for the envelope compositions of low-mass (1.5-3 M⊙) AGB stars with close-to-solar metallicities (Z = 0.014 and 0.02). The overall trace element abundances (excluding Eu and Yb) appear consistent with the predicted s-process patterns. The depletions of Eu and Yb suggest that these elements remained in the gas phase during the condensation of SiC. The lack of depletion in some other moderately refractory elements (like Ba), and the presence of volatile elements (e.g. Xe) indicates that these elements were incorporated into SiC by other mechanisms, most likely ion implantation.

  16. Passivation of surface-nanostructured f-SiC and porous SiC

    DEFF Research Database (Denmark)

    Ou, Haiyan; Lu, Weifang; Ou, Yiyu

    The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper.......The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper....

  17. Low Activation Joining of SiC/SiC Composites for Fusion Applications: Modeling Thermal and Irradiation-induced Swelling Effects on Integrity of Ti3SiC2/SiC Joint

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Ba Nghiep; Henager, Charles H.; Kurtz, Richard J.; Ferraris, M.; Katoh, Yutai

    2017-03-31

    This work developed a continuum damage mechanics model that incorporates thermal expansion combined with irradiation-induced swelling effects to study the origin of cracking observed in recent irradiation experiments. Micromechanical modeling using an Eshelby-Mori-Tanaka approach was used to compute the thermoelastic properties of the Ti3SiC2/SiC joint needed for the model. In addition, a microstructural dual-phase Ti3SiC2/SiC model was developed to determine irradiation-induced swelling of the composite joint at a given temperature resulting from differential swelling of SiC and the Ti3SiC2 MAX phase. Three cases for the miniature torsion hourglass (THG) specimens containing a Ti3SiC2/SiC joint were analyzed corresponding to three irradiation temperatures: 800oC, 500oC, and 400oC.

  18. Recent developments in SiC single-crystal electronics

    Science.gov (United States)

    Ivanov, P. A.; Chelnokov, V. E.

    1992-07-01

    The present paper is an analytical review of the last five or six years of research and development in SiC. It outlines the major achievements in single crystal growth and device technology. Electrical performance of SiC devices designed during these years and some new trends in SiC electronics are also discussed. During the 1980s the studies on sublimation and liquid-phase epitaxial growth of SiC single crystal were continued successfully. At that time, such methods as chemical vapour deposition, thermal oxidation, 'dry' plasma etching and ion implantation which yielded good results with silicon, came into use. As a result of the technological progress, discrete devices appeared, which incorporated the potential advantages of SiC as a wide bandgap material. Among these were high temperature (500-600 degrees C) rectifier diodes and field-effect transistors, high efficiency light-emitting diodes for the short-wave region of the visible spectrum, and detectors of ultraviolet radiation. It should be stressed that the devices were of commercial quality and could be applied in various fields (control systems of automobile engines, aerospace apparatus, geophysical equipment, colour displays in information systems, etc.). The developments in technology and the promising results of research on electrical performance of the devices already available give hope that in the near future SiC may become the basic material for power microwave devices, and for thermo- and radiation-resistant integrated circuits. This process can be stimulated by further perfection of single-crystal substrates of large area, by development of stable high temperature ohmic contacts, micro- and heterostructures.

  19. Stress Analysis of SiC MEMS Using Raman Spectroscopy

    Science.gov (United States)

    Ness, Stanley J.; Marciniak, M. A.; Lott, J. A.; Starman, L. A.; Busbee, J. D.; Melzak, J. M.

    2003-03-01

    During the fabrication of Micro-Electro-Mechanical Systems (MEMS), residual stress is often induced in the thin films that are deposited to create these systems. These stresses can cause the device to fail due to buckling, curling, or fracture. Industry is looking for ways to characterize the stress during the deposition of thin films in order to reduce or eliminate device failure. Micro-Raman spectroscopy has been successfully used to characterize poly-Si MEMS devices made with the MUMPS® process. Raman spectroscopy was selected because it is nondestructive, fast and has the potential for in situ stress monitoring. This research attempts to use Raman spectroscopy to analyze the stress in SiC MEMS made with the MUSiC® process. Raman spectroscopy is performed on 1-2-micron-thick SiC thin films deposited on silicon, silicon nitride, and silicon oxide substrates. The most common poly-type of SiC found in thin film MEMS made with the MUSiC® process is 3C-SiC. Research also includes baseline spectra of 6H, 4H, and 15R poly-types of bulk SiC.

  20. Nucleation and void formation mechanisms in SiC thin film growth on Si by carbonization

    Energy Technology Data Exchange (ETDEWEB)

    Li, J.P.; Steckl, A.J. [Univ. of Cincinnati, OH (United States)

    1995-02-01

    The nucleation mechanisms for SiC thin films on Si were investigated by interrupting the growth at very brief times ({approximately}1 to 10 s) using rapid thermal chemical vapor deposition in conjunction with hydrocarbon carbonization. The resulting SiC nuclei and films on Si have been studied by scanning electron microscopy and atomic force microscopy. The hydrocarbon partial pressure in the gas stream was found to determine the nucleation mode. Low precursor concentration results in initial three-dimensional (island) growth which enables the study or trench and void formation. Voids were observed to initiate when two neighboring nuclei come in contact. Trenches in the Si substrate surround each isolated nucleus, with the trench depth increasing with the diameter of the island. SiC films grown for a nominal reaction time of 1 s indicate that increasing the propane concentration results in decreases in SiC grain size and surface roughness and an increase in the nuclei density. A model is proposed for the nucleation process of SiC growth on Si by carbonization consisting of the following key steps: (1) the initial nucleation density is determined by the precursor concentration; (2) lateral and vertical growth of individual nuclei proceeds by consumption of Si atoms around their periphery, forming trenches in the substrate; (3) Si voids are formed in the Si substrate near the SiC/Si interface when nuclei grow large enough to come in contact and, thus, restrict the supply of Si atoms.

  1. Surface engineering of SiC via sublimation etching

    Energy Technology Data Exchange (ETDEWEB)

    Jokubavicius, Valdas, E-mail: valjo@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, 581 83 Linköping (Sweden); Yazdi, Gholam R.; Ivanov, Ivan G. [Department of Physics, Chemistry and Biology, Linköping University, 581 83 Linköping (Sweden); Niu, Yuran; Zakharov, Alexei [Max Lab, Lund University, S-22100 Lund (Sweden); Iakimov, Tihomir; Syväjärvi, Mikael; Yakimova, Rositsa [Department of Physics, Chemistry and Biology, Linköping University, 581 83 Linköping (Sweden)

    2016-12-30

    Highlights: • Comparison of 6H-, 4H- and 3C-SiC sublimation etching. • Effects of Si-C and Si-C-Ta chemical systems on etching mechanisms. • Effect of etching ambient on surface reconstruction. • Application of etched 4H-SiC surface for the growth of graphene nanoribbons is illustrated. - Abstract: We present a technique for etching of SiC which is based on sublimation and can be used to modify the morphology and reconstruction of silicon carbide surface for subsequent epitaxial growth of various materials, for example graphene. The sublimation etching of 6H-, 4H- and 3C-SiC was explored in vacuum (10{sup −5} mbar) and Ar (700 mbar) ambient using two different etching arrangements which can be considered as Si-C and Si-C-Ta chemical systems exhibiting different vapor phase stoichiometry at a given temperature. The surfaces of different polytypes etched under similar conditions are compared and the etching mechanism is discussed with an emphasis on the role of tantalum as a carbon getter. To demonstrate applicability of such etching process graphene nanoribbons were grown on a 4H-SiC surface that was pre-patterned using the thermal etching technique presented in this study.

  2. Packaging Technology for SiC High Temperature Electronics

    Science.gov (United States)

    Chen, Liang-Yu; Neudeck, Philip G.; Spry, David J.; Meredith, Roger D.; Nakley, Leah M.; Beheim, Glenn M.; Hunter, Gary W.

    2017-01-01

    High-temperature environment operable sensors and electronics are required for long-term exploration of Venus and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500 C. A compatible packaging system is essential for long-term testing and application of high temperature electronics and sensors in relevant environments. This talk will discuss a ceramic packaging system developed for high temperature electronics, and related testing results of SiC integrated circuits at 500 C facilitated by this high temperature packaging system, including the most recent progress.

  3. Deposition of SiC thin films by PECVD

    CERN Document Server

    Cho, N I; Kim, C K

    1999-01-01

    The SiC films were deposited on Si substrate by the decomposition of CH sub 3 SiCl sub 3 (methylthrichlorosilane) molecules in a high frequency discharge field. From the Raman spectra, it is conjectured that the deposited film are formed into the polycrystalline structure. The photon absorption measurement reveal that the band gap of the electron energy state are to be 2.4 eV for SiC, and 2.6 eV for Si sub 0 sub . sub 4 C sub 0 sub . sub 6 , respectively. In the high power density regime, methyl-radicals decompose easily and increases the carbon concentration in plasma and result in the growing films.

  4. Influence of microstructure on hydrothermal corrosion of chemically vapor processed SiC composite tubes

    Science.gov (United States)

    Kim, Daejong; Lee, Ho Jung; Jang, Changheui; Lee, Hyeon-Geun; Park, Ji Yeon; Kim, Weon-Ju

    2017-08-01

    Multi-layered SiC composites consisting of monolithic SiC and a SiCf/SiC composite are one of the accident tolerant fuel cladding concepts in pressurized light water reactors. To evaluate the integrity of the SiC fuel cladding under normal operating conditions of a pressurized light water reactor, the hydrothermal corrosion behavior of multi-layered SiC composite tubes was investigated in the simulated primary water environment of a pressurized water reactor without neutron fluence. The results showed that SiC phases with good crystallinity such as Tyranno SA3 SiC fiber and monolithic SiC deposited at 1200 °C had good corrosion resistance. However, the SiC phase deposited at 1000 °C had less crystallinity and severely dissolved in water, particularly the amorphous SiC phase formed along grain boundaries. Dissolved hydrogen did not play a significant role in improving the hydrothermal corrosion resistance of the CVI-processed SiC phases containing amorphous SiC, resulting in a significant weight loss and reduction of hoop strength of the multi-layered SiC composite tubes after corrosion.

  5. Passivation of SiC device surfaces by aluminum oxide

    Science.gov (United States)

    Hallén, A.; Usman, M.; Suvanam, S.; Henkel, C.; Martin, D.; Linnarsson, M. K.

    2014-03-01

    A steady improvement in material quality and process technology has made electronic silicon carbide devices commercially available. Both rectifying and switched devices can today be purchased from several vendors. This successful SiC development over the last 25 years can also be utilized for other types of devices, such as light emitting and photovoltaic devices, however, there are still critical problems related to material properties and reliability that need to be addressed. This contribution will focus on surface passivation of SiC devices. This issue is of utmost importance for further development of SiC MOSFETs, which so far has been limited by reliability and low charge carrier surface mobilities. Also bipolar devices, such as BJTs, LEDs, or PV devices will benefit from more efficient and reliable surface passivation techniques in order to maintain long charge carrier lifetimes. Silicon carbide material enables the devices to operate at higher electric fields, higher temperatures and in more radiation dense applications than silicon devices. To be able to utilize the full potential of the SiC material, it is therefore necessary to develop passivation layers that can sustain these more demanding operation conditions. In this presentation it will also be shown that passivation layers of Al2O3 deposited by atomic layer deposition have shown superior radiation hardness properties compared to traditional SiO2-based passivation layers.

  6. Formation of SiC thin films by chemical vapor deposition with vinylsilane precursor

    Science.gov (United States)

    Doi, Takuma; Takeuchi, Wakana; Jin, Yong; Kokubun, Hiroshi; Yasuhara, Shigeo; Nakatsuka, Osamu; Zaima, Shigeaki

    2018-01-01

    We have examined the formation of SiC thin films by chemical vapor deposition (CVD) using vinylsilane and investigated the chemical bonding state and crystallinity of the prepared SiC thin films. We achieved the formation of a Si–H–less SiC film at growth temperatures as low as 600 °C. Also, we investigated the in situ doping effect of N by the incorporation of NH3 gas in the SiC growth and demonstrated that the chemical composition of N in SiC thin films was controlled by adjusting the NH3 flow rate. In addition, we examined the growth of SiC thin films on a Cu substrate and achieved the formation of a SiC thin film while avoiding any significant reaction between SiC and Cu at a growth temperature of 700 °C.

  7. Brazing of SiC using Cu-Si non reactive alloys

    Energy Technology Data Exchange (ETDEWEB)

    Gasse, A. [C.E.A., CEREM-DEM, Grenoble (France); Chaumat, G. [C.E.A., CEREM-DEM, Grenoble (France); Rado, C. [INPG/LTCM-ENSEEG, Saint Martin d`Heres (France); Eustathopoulos, N. [INPG/LTCM-ENSEEG, Saint Martin d`Heres (France)

    1995-12-31

    SiC was brazed with a Cu 24 at% Si alloy under high vacuum at 1473 K. This alloy well wets SiC without any measurable reactivity and after cooling, leads to an interface which appears to be strong. It was found that the degree of filling of the joint by the alloy depends mainly on the geometry of the ceramic-metal-vapour system. It is shown that geometrical factors influence the kinetics of deoxidation of both alloys and SiC surfaces and, as a consequence, considerably modify the wetting kinetics and filling of the joint. Successful helium-tight tube/plate brazed joints have been obtained. Nevertheless, thermal expansion mismatch remains considerable between the SiC and the Cu-Si alloy. Further work is needed to improve the mechanical behaviour of such junctions to avoid crack formation. (orig./MM)

  8. Heteroepitaxial growth of SiC on Si by gas source MBE with silacyclobutane

    Energy Technology Data Exchange (ETDEWEB)

    Chen, J.; Steckl, A.J. [Cincinnati Univ., OH (United States). Nanoelectronics Lab.; Loboda, M.J. [Dow Corning Corp., Midland, MI (United States)

    1998-06-01

    3C-SiC films have been grown by MBE on Si(100) and Si(111) from the organosilane precursor silacyclobutane at temperatures of 800 to 1000 C and pressures of 1 to 5 x 10{sup -6} Torr. The chemical composition of the grown films provided by SIMS indicates a Si to C atomic ratio of about 1. The chemical structure of SiC was confirmed by FTIR. The surface morphology and crystallinity of SiC films were studied by SEM and RHEED. X-ray diffraction reveals that SiC films grown on Si(111) with the presence of native oxide exhibit better crystallinity than those grown on Si(111) surfaces from which the oxide is removed in-situ prior to growth. (orig.) 11 refs.

  9. Detection Simulation of SiC Semiconductor Detector

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Hong Yeop; Kim, Jeong Dong; Lee, Yong Deok; Kim, Ho Dong [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2013-10-15

    In a high radiation environment, it has received attention as a material for detecting radiation (neutron). As the field of application of a SIC neutron detector, the semiconductor detector used in cosmic rays was proposed by Ruddy. Recently, X-ray and low-energy gamma ray spectrometry with SiC detectors has been reported. Its usability has recently been being proved in neutron dose surveillance in BNCT (Boron-Capture Neutron Therapy), thermal neutron detection in a waste drum, nuclear material surveillance, and fast neutron detection. In addition, in 2006, an experiment was actually performed by Natsume on spent nuclear fuel. SIC is suitable for radiation surveillance in a complex radiation field emitted from spent nuclear fuel and the pyropocess process. In the radiation field of spent nuclear fuel, neutrons and gamma rays are generated. In this research, the performance of a SiC detector made at KAERI was evaluated to obtain a discriminated neutron signal. First, using neutron ({sup 252}Cf), alpha ({sup 241}Am), and gamma ({sup 60}Co) sources, a SiC semi- conductor detector was tested. The energy spectrum in a complex radiation field was simulated using the MCNPX 2.5. Finally, the experimental results by Ruddy were compared with the simulation results. Research result, whether the SiC semiconductor detector operating or not was confirmed through the simulation according to the neutron, gamma. The simulation results were similar to those of Ruddy. A further study is underway to investigate the discriminated neutron signal of a complex radiation field.

  10. Residual stresses and mechanical properties of Si3N4/SiC multilayered composites with different SiC layers

    Directory of Open Access Journals (Sweden)

    Shichao Liu

    2017-07-01

    Full Text Available The effect of residual stresses on the strength, toughness and work of fracture of Si3N4/SiC multilayered composites with different SiC layers has been investigated. It may be an effective way to design and optimize the mechanical properties of Si3N4/SiC multilayered composites by controlling the properties of SiC layers. Si3N4/SiC multilayered composites with different SiC layers were fabricated by aqueous tape casting and pressureless sintering. Residual stresses were calculated by using ANSYS simulation, the maximum values of tensile and compressive stresses were 553.2 MPa and −552.1 MPa, respectively. Step-like fracture was observed from the fracture surfaces. Fraction of delamination layers increased with the residual stress, which can improve the reliability of the materials. Tensile residual stress was benefit to improving toughness and work of fracture, but the strength of the composites decreased.

  11. High temperature flow behaviour of SiC reinforced lithium ...

    Indian Academy of Sciences (India)

    Unknown

    Abstract. The compressive flow behaviour of lithium aluminosilicate (LAS) glass, with and without SiC particulate reinforcements, was studied. The LAS glass crystallized to β spodumene during high-temperature testing. The flow behaviour of LAS glass changed from Newtonian to non-Newtonian due to the presence of.

  12. Conducted EMI in Inverters with SiC Transistors

    NARCIS (Netherlands)

    Gong, X.

    2013-01-01

    Conducted EMI in Inverters with SiC Transistors Electromagnetic Interference (EMI) is the main side effect accompanied with the fast voltage and current switching transients in power electronics applications. Compliance of the Electromagnetic Compatibility (EMC) standard is prescribed for any power

  13. Nucleation and growth of polycrystalline SiC

    DEFF Research Database (Denmark)

    Kaiser, M.; Schimmel, S.; Jokubavicius, V.

    2014-01-01

    The nucleation and bulk growth of polycrystalline SiC in a 2 inch PVT setup using isostatic and pyrolytic graphite as substrates was studied. Textured nucleation occurs under near-thermal equilibrium conditions at the initial growth stage with hexagonal platelet shaped crystallites of 4H, 6H and ...

  14. Crystal growth and characterization of fluorescent SiC

    DEFF Research Database (Denmark)

    Wellmann, P.; Kaiser, M.; Hupfer, T.

    Silicon carbide (SiC) is widely used as substrate for nitride based light emitting diodes (LEDs). For today’s white LEDs mainly a sandwich structure of a blue or ultra violet LED and a yellowish phosphorus is used. In the frame of European project we study a concept to implement the functionality...

  15. Performance of bulk SiC radiation detectors

    CERN Document Server

    Cunningham, W; Lamb, G; Scott, J; Mathieson, K; Roy, P; Bates, R; Thornton, P; Smith, K M; Cusco, R; Glaser, M; Rahman, M

    2002-01-01

    SiC is a wide-gap material with excellent electrical and physical properties that may make it an important material for some future electronic devices. The most important possible applications of SiC are in hostile environments, such as in car/jet engines, within nuclear reactors, or in outer space. Another area where the material properties, most notably radiation hardness, would be valuable is in the inner tracking detectors of particle physics experiments. Here, we describe the performance of SiC diodes irradiated in the 24 GeV proton beam at CERN. Schottky measurements have been used to probe the irradiated material for changes in I-V characteristics. Other methods, borrowed from III-V research, used to study the irradiated surface include atomic force microscope scans and Raman spectroscopy. These have been used to observe the damage to the materials surface and internal lattice structure. We have also characterised the detection capabilities of bulk semi-insulating SiC for alpha radiation. By measuring ...

  16. Porous Alumina Ceramics Modified with SiC Nanopowder

    OpenAIRE

    Zaķe-Tiļuga, I; Švinka, R; Švinka, V

    2011-01-01

    The aim of this study was to clarify how addition of plasma synthesized SiC nanopowder (up to 5 wt%) affect some properties (e.g., shrinkage, bending strength and thermal shock resistance) of porous alumina ceramics produced by slip casting method.

  17. Synthesis of whiskers of SiC microwave assisted; Sintesis de whiskers de SiC asistida por microondas

    Energy Technology Data Exchange (ETDEWEB)

    Garza-Mendez, F. J.; Vanegas, A. J.; Vazquez, B. A.; Garza-Paz, J.

    2013-06-01

    We developed a new process for the synthesis of SiC whiskers assisted by microwaves; this is based on the mixture of silica xerogels and graphite powder. As energy source were used microwaves of 2.45 GHz and 1.0 kW of power RMS. On the other hand, mesoporous silica was synthesized via sol-gel, the precursors used were TEOS/H{sub 2}O and ethanol. Through analysis of the BET is determined the value of average pore size (3.0 nm) and the surface area (1090 m2/g).By mean of X-Ray diffraction it was demonstrated that the silica obtained is an amorphous solid and, the powders obtained in the microwave synthesis are {beta}-SiC. Synthesized SiC powders were observed using a SEM in secondary electron mode, it was observed that this powders consists of SiC whiskers. The effect of microwaves on the synthesis of whiskers of SiC is discussed in the present work. (Author) 19 refs.

  18. Progress of d0 magnetism in SiC

    Science.gov (United States)

    Wang, Yutian; Liu, Chenguang; Zhang, Yuming

    2017-03-01

    The properties of defect-induced ferromagnetism ({{{d}}}0 magnetism) in SiC belong to carbon-based material which has been systematically investigated after graphite. In this paper, we reviewed our research progress about {{{d}}}0 magnetism in two aspects, i.e., magnetic source and magnetic coupling mechanism. The {{{V}}}{{Si}} {{{V}}}{{C}} divacancies have been evidenced as the probable source of {{{d}}}0 magnetism in SiC. To trace the ferromagnetic source in microscopic and electronic view, the p electrons of the nearest-neighbor carbon atoms, which are around the {{{V}}}{{Si}} {{{V}}}{{C}} divacancies, are sourced. For magnetic coupling mechanism, a higher divacancy concentration leads to stronger paramagnetic interaction but not stronger ferromagnetic coupling. So the {{{d}}}0 magnetism can probably be explained as a local effect which is incapable of scaling up with the volume.

  19. SiC Microsensor with Piezoresistive Diamond Sensing Elements

    Science.gov (United States)

    1992-12-31

    AD-A.61 346 SiC MICROSENSOR WITH PIEZORESISTIVE DIAMOND SENSING ELEMENTS Kuli/e Semiconductor Products, Inc Principal Investigator: Dr. A.D. Kurtz...Davidson and A.D. Kurtz 7. PERORMING ORGANIZATION NAM.(S) ANO AD-SS-ES) PIRJQAMr( OAGANLM Kulite Semiconductor Products, Inc. REPORT NUMBER One Willow...techniques have been developed for Si, which allow the fabrication of integral force collector- piezoresistor networks [2]. However, there are fundamental

  20. Modelling of ion implantation in SiC crystals

    Energy Technology Data Exchange (ETDEWEB)

    Chakarov, Ivan [SILVACO International, 4701 Patrick Henry Drive, Building 2, Santa Clara, CA 95054 (United States)]. E-mail: ivan.chakarov@silvaco.com; Temkin, Misha [SILVACO International, 4701 Patrick Henry Drive, Building 2, Santa Clara, CA 95054 (United States)

    2006-01-15

    An advanced electronic stopping model for ion implantation in SiC has been implemented within the binary collision approximation. The model has been thoroughly tested and validated for Al implantation into 4H-, 6H-SiC under different initial implant conditions. A very good agreement between calculated and experimental profiles has been achieved. The model has been integrated in an industrial technology CAD process simulator.

  1. In situ toughened SiC ceramics with Al-B-C additions and oxide-coated SiC platelet/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Cao, J. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering]|[Lawrence Berkeley National Lab., CA (United States). Materials Sciences Div.

    1996-12-01

    This work aimed at fabrication and characterization of high toughness SiC ceramics through the applications of in situ toughening and SiC platelet reinforcement. The processing-microstructure-property relations of hot pressed SiC with Al, B, and C additions (designated as ABC-SiC) were investigated. Through a liquid phase sintering mechanism, dense SiC was obtained by hot pressing at a temperature as low as 1,700 C with 3 wt% Al, 0.6 wt% B, and 2 wt% C additions. These sintering aids also enhanced the {beta}-to-{alpha} (3C-to-4H) phase transformation, which promoted SiC grains to grow into plate-like shapes. Under optimal processing conditions, the microstructure exhibited high-aspect-ratio plate-shaped grains with a thin (< 1 nm) Al-containing amorphous grain boundary film. The mechanical properties of the toughened SiC and the composites were evaluated in comparison with a commercial Hexoloy SiC under identical test conditions. The C-curve behavior was examined using the strength-indentation load relationship and compared with that directly measured using precracked compact tension specimens. The in situ toughened ABC-SiC exhibited much improved flaw tolerance and a significantly rising R-curve behavior. A steady-state toughness in excess of 9 MPam{sup 1/2} was recorded for the ABC-SiC in comparison to a single valued toughness below 3 MPam{sup 1/2} for the Hexoloy. Toughening in the ABC-SiC was mainly attributed to grain bridging and subsequent pullout of the plate-shaped grains. The high toughness ABC-SiC exhibited a bend strength of 650 MPa with a Weibull modulus of 19; in comparison, the commercial SiC showed a bend strength of 400 MPa with a Weibull modulus of 6. Higher fracture toughness was also achieved by the reinforcement of SiC platelets, encapsulated with alumina, yttria, or silica, in a SiC matrix.

  2. Methods of radiation effects evaluation of SiC/SiC composite and SiC fibers

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States)

    1998-03-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23--24, 1997. Several methods for radiation effects evaluation of SiC fibers and fiber-reinforced SiC/SiC composite are presented.

  3. First principle identification of SiC monolayer as an efficient catalyst for CO oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Sinthika, S., E-mail: ranjit.t@res.srmuniv.ac.in, E-mail: sinthika90@gmail.com; Thapa, Ranjit, E-mail: ranjit.t@res.srmuniv.ac.in, E-mail: sinthika90@gmail.com [SRM Research Institute, SRM University, Kattankulathur 603203, Tamil Nadu (India); Reddy, C. Prakash [Department of Physics and Nanotechnology, SRM University, Kattankulathur 603203, Tamil Nadu (India)

    2015-06-24

    Using density functional theory, we investigated the electronic properties of SiC monolayer and tested its catalytic activity toward CO oxidation. The planar nature of a SiC monolayer is found to stable and is a high band gap semiconductor. CO interacts physically with SiC surface, whereas O{sub 2} is adsorbed with moderate binding. CO oxidation on SiC monolayer prefers the Eley Rideal mechanism over the Langmuir Hinshelwood mechanism, with an easily surmountable activation barrier during CO{sub 2} formation. Overall metal free SiC monolayer can be used as efficient catalyst for CO oxidation.

  4. Fabrication and characterization of Ti3SiC2–SiC nanocomposite by ...

    Indian Academy of Sciences (India)

    Administrator

    in situ reaction synthesis of TiC/Si/Al powders. BAOYAN LIANG†, MINGZHI WANG*, ... The microstructure and mechanical properties of Ti3SiC2–SiC nanocomposite fabricated by in situ hot pressing (HP) synthesis process were .... 7 mm × 27 mm bars for measuring the three-point bend- ing strength with a span of 20 mm. 3.

  5. Study of indentation induced cracks in MoSi2-reaction bonded SiC ...

    Indian Academy of Sciences (India)

    The infiltrated sample had a density > 92% of the theoretical density (TD) and microstructurally contained SiC, MoSi2, residual Si and unreacted C. The material was tested for indentation fracture toughness at room temperature with a Vicker's indenter and KIC was found to be 4.42 MPa√m which is around 39% higher than ...

  6. Fabrication and characterization of Ti3SiC2–SiC nanocomposite by ...

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 34; Issue 7. Fabrication and characterization of Ti3SiC2–SiC nanocomposite by in situ reaction synthesis of TiC/Si/Al powders. Baoyan Liang Mingzhi Wang Xiaopu Li Yunchao Mu. Volume 34 Issue 7 December 2011 pp 1309-1311 ...

  7. Brazing of SiC using Cu-Si non reactive alloys

    Energy Technology Data Exchange (ETDEWEB)

    Gasse, A.; Chaumat, G. [CEA Centre d`Etudes de Grenoble, 38 (France). Dept. d`Etudes des Materiaux; Rado, C.; Eustathopoulos, N. [Institut National Polytechnique, 38 - Grenoble (France)

    1995-12-31

    Wetting and adherence of filler metals on ceramics used to be achieved with active elements such as titanium. However, sessile drop experiments had already showed that a Cu 24 at % Si alloy has excellent wetting and adherence properties on SiC substrates under high vacuum without any measurable reactivity. Despite this good wetting, incomplete filling of joints was sometimes observed with such alloys in certain brazing experiments. This discrepancy is explained by a detailed analysis of Cu-Si alloy wetting mechanisms on SiC and confirmed by brazing experiments in different geometries. (authors). 8 figs.

  8. Fiber/matrix interfaces for SiC/SiC composites: Multilayer SiC coatings

    Energy Technology Data Exchange (ETDEWEB)

    Halverson, H.; Curtin, W.A. [Virginia Polytechnic Institute and State Univ., Blacksburg, VA (United States)

    1996-08-01

    Tensile tests have been performed on composites of CVI SiC matrix reinforced with 2-d Nicalon fiber cloth, with either pyrolitic carbon or multilayer CVD SiC coatings [Hypertherm High-Temperature Composites Inc., Huntington Beach, CA.] on the fibers. To investigate the role played by the different interfaces, several types of measurements are made on each sample: (i) unload-reload hysteresis loops, and (ii) acoustic emission. The pyrolitic carbon and multilayer SiC coated materials are remarkably similar in overall mechanical responses. These results demonstrate that low-modulus, or compliant, interface coatings are not necessary for good composite performance, and that complex, hierarchical coating structures may possibly yield enhanced high-temperature performance. Analysis of the unload/reload hysteresis loops also indicates that the usual {open_quotes}proportional limit{close_quotes} stress is actually slightly below the stress at which the 0{degrees} load-bearing fibers/matrix interfaces slide and are exposed to atmosphere.

  9. Residual stresses and mechanical properties of Si3N4/SiC multilayered composites with different SiC layers; Las tensiones residuales y las propiedades mecánicas de compuestos multicapa de Si3N4/SiC con diferentes capas de SiC

    Energy Technology Data Exchange (ETDEWEB)

    Liua, S.; Lia, Y.; Chena, P.; Lia, W.; Gaoa, S.; Zhang, B.; Yeb, F.

    2017-11-01

    The effect of residual stresses on the strength, toughness and work of fracture of Si3N4/SiC multilayered composites with different SiC layers has been investigated. It may be an effective way to design and optimize the mechanical properties of Si3N4/SiC multilayered composites by controlling the properties of SiC layers. Si3N4/SiC multilayered composites with different SiC layers were fabricated by aqueous tape casting and pressureless sintering. Residual stresses were calculated by using ANSYS simulation, the maximum values of tensile and compressive stresses were 553.2MPa and −552.1MPa, respectively. Step-like fracture was observed from the fracture surfaces. Fraction of delamination layers increased with the residual stress, which can improve the reliability of the materials. Tensile residual stress was benefit to improving toughness and work of fracture, but the strength of the composites decreased. [Spanish] Se ha investigado el efecto de las tensiones residuales en la resistencia, dureza y trabajo de fractura de los compuestos multicapa de Si3N4/SiC con diferentes capas de SiC. Puede ser una manera eficaz de diseñar y optimizar las propiedades mecánicas de los compuestos multicapa de Si3N4/SiC mediante el control de las propiedades de las capas de SiC. Los compuestos multicapa de Si3N4/SiC con diferentes capas de SiC se fabricaron por medio de colado en cinta en medio acuoso y sinterización sin presión. Las tensiones residuales se calcularon mediante el uso de la simulación ANSYS, los valores máximos de las fuerzas de tracción y compresión fueron 553,2 MPa y −552,1 MPa, respectivamente. Se observó una fractura escalonada a partir de las superficies de fractura. La fracción de capas de deslaminación aumenta con la tensión residual, lo que puede mejorar la fiabilidad de los materiales. La fuerza de tracción residual era beneficiosa para la mejora de la dureza y el trabajo de fractura, pero la resistencia de los compuestos disminuyó.

  10. Oxidation Behavior and Mechanism of Al4SiC4 in MgO-C-Al4SiC4 System

    Directory of Open Access Journals (Sweden)

    Huabai Yao

    2017-06-01

    Full Text Available Al4SiC4 powder with high purity was synthesized using the powder mixture of aluminum (Al, silicon (Si, and carbon (C at 1800 °C in argon. Their oxidation behavior and mechanism in a MgO-C-Al4SiC4 system was investigated at 1400–1600 °C. XRD, SEM, and energy dispersive spectrometry (EDS were adopted to analyze the microstructure and phase evolution. The results showed that the composition of oxidation products was closely related to the atom diffusion velocity and the compound oxide layer was generated on Al4SiC4 surface. In addition, the effect of different CO partial pressure on the oxidation of Al4SiC4 crystals was also studied by thermodynamic calculation. This work proves the great potential of Al4SiC4 in improving the MgO-C materials.

  11. Intercalated europium metal in epitaxial graphene on SiC

    Science.gov (United States)

    Anderson, Nathaniel A.; Hupalo, Myron; Keavney, David; Tringides, Michael C.; Vaknin, David

    2017-10-01

    X-ray magnetic circular dichroism (XMCD) reveals the magnetic properties of intercalated europium metal under graphene on SiC(0001). The intercalation of Eu nanoclusters (average size 2.5 nm) between graphene and SiC substate are formed by deposition of Eu on epitaxially grown graphene that is subsequently annealed at various temperatures while keeping the integrity of the graphene layer. Using sum-rules analysis of the XMCD of Eu M4 ,5 edges at T =15 K, our samples show paramagnetic-like behavior with distinct anomaly at T ≈90 K, which may be related to the Nèel transition, TN=91 K, of bulk metal Eu. We find no evidence of ferromagnetism due to EuO or antiferromagnetism due to Eu2O3 , indicating that the graphene layer protects the intercalated metallic Eu against oxidation over months of exposure to atmospheric environment.

  12. Surface functionalization and biomedical applications based on SiC

    Energy Technology Data Exchange (ETDEWEB)

    Yakimova, R; Petoral, R M Jr; Yazdi, G R; Vahlberg, C; Spetz, A Lloyd; Uvdal, K [Department of Physics, Chemistry and Biology, Linkoeping University, SE-58183 Linkoeping (Sweden)

    2007-10-21

    The search for materials and systems, capable of operating long term under physiological conditions, has been a strategy for many research groups during the past years. Silicon carbide (SiC) is a material, which can meet the demands due to its high biocompatibility, high inertness to biological tissues and to aggressive environment, and the possibility to make all types of electronic devices. This paper reviews progress in biomedical and biosensor related research on SiC. For example, less biofouling and platelet aggregation when exposed to blood is taken advantage of in a variety of medical implantable materials while the robust semiconducting properties can be explored in surface functionalized bioelectronic devices. (review article)

  13. Characteristics of Al-Si-Mg Reinforced SiC Composites Produced by Stir Casting Route

    Science.gov (United States)

    Zulfia, A.; Zhakiah, T.; Dhaneswara, D.; Sutopo

    2017-05-01

    Al-Si-Mg alloy that is strengthened by silicon carbide particles has the potential to have excellent mechanical properties with light weight. In this study, metal matrix composites reinforced silicon carbide from 2 vf-% to 15 vf-% and magnesium amounted to 10 wt-% as an external dopant were fabricated by stir casting route. The magnesium was added to promote the wetting between Al matrix and reinforced SiC. The process involved SiC blended inside the molten Al by a stirrer with a rotational speed of 500 rpm at 800 °C for 2 minutes and degassed with Ar gas for 4 minutes to remove all of the gas content in the molten Al. The molten composite was then cast into the plate and tensile test sample molds. The effect of SiC addition on the mechanical properties and microstructure of the composites was investigated. The result showed that the optimum tensile strength was reached at 8 vf-% SiC with the value of 175 MPa, while the elongation was 9.1%. The maximum hardness and wear rate were achieved at 10 vf-% SiC with the values of 57 HRB and 0.0022 mm3/m, respectively. Such increase was related to the microstructures dominated by the presence of Chinese script, primary and eutectic Mg2Si which were contributed to the mechanical properties of the composites.

  14. High temperature flow behaviour of SiC reinforced lithium ...

    Indian Academy of Sciences (India)

    The flow behaviour of LAS glass changed from Newtonian to non-Newtonian due to the presence of crystalline phase. Further, with the addition of 40 vol.% SiC additions, the strain rate sensitivity of flow stress decreased. While the activation energy for flow in LAS was 300 kJ/mole, it increased to 995 kJ/mole with the ...

  15. 1 GHz, 200 C, SiC MESFET Clapp Oscillator

    Science.gov (United States)

    Ponchak, George E.; Schwartz, Zachary D.

    2005-01-01

    A SiC Clapp oscillator frabricated on an alumina substrate with chip capacitors and spiral inductors is designed for high temperature operation at 1 gigahertz. The oscillator operated from 30 to 200 C with an output power of 21.8 dBm at 1 gigahertz and 200 C. The efficiency at 200 C is 15 percent. The frequency variation over the temperature range is less than 0.5 percent.

  16. SYLRAMIC™ SiC fibers for CMC reinforcement

    Science.gov (United States)

    Jones, Richard E.; Petrak, Dan; Rabe, Jim; Szweda, Andy

    2000-12-01

    Dow Corning researchers developed SYLRAMIC SiC fiber specifically for use in ceramic-matrix composite (CMC) components for use in turbine engine hot sections where excellent thermal stability, high strength and high thermal conductivity are required. This is a stoichiometric SiC fiber with a high degree of crystallinity, high tensile strength, high tensile modulus and good thermal conductivity. Owing to the small diameter, this textile-grade fiber can be woven into 2-D and 3-D structures for CMC fabrication. These properties are also of high interest to the nuclear community. Some initial studies have shown that SYLRAMIC fiber shows very good dimensional stability in a neutron flux environment, which offers further encouragement. This paper will review the properties of SYLRAMIC SiC fiber and then present the properties of polymer impregnation and pyrolysis (PIP) processed CMC made with this fiber at Dow Corning. While these composites may not be directly applicable to applications of interest to this audience, we believe that the properties shown will give good evidence that the fiber should be suitable for high temperature structural applications in the nuclear arena.

  17. Broadband Antireflection and Light Extraction Enhancement in Fluorescent SiC with Nanodome Structures

    DEFF Research Database (Denmark)

    Ou, Yiyu; Zhu, Xiaolong; Jokubavicius, Valdas

    2014-01-01

    We demonstrate a time-efficient and low-cost approach to fabricate Si3N4 coated nanodome structures in fluorescent SiC. Nanosphere lithography is used as the nanopatterning method and SiC nanodome structures with Si3N4 coating are formed via dry etching and thin film deposition process. By using...

  18. Ultra High Temperature (UHT) SiC Fiber (Phase 2)

    Science.gov (United States)

    Dicarlo, James A.; Jacobson, Nathan S.; Lizcano, Maricela; Bhatt, Ramakrishna T.

    2015-01-01

    Silicon-carbide fiber-reinforced silicon-carbide ceramic matrix composites (SiCSiC CMC) are emerginglightweight re-usable structural materials not only for hot section components in gas turbine engines, but also for controlsurfaces and leading edges of reusable hypersonic vehicles as well as for nuclear propulsion and reactor components. Ithas been shown that when these CMC are employed in engine hot-section components, the higher the upper usetemperature (UUT) of the SiC fiber, the more performance benefits are accrued, such as higher operating temperatures,reduced component cooling air, reduced fuel consumption, and reduced emissions. The first generation of SiCSiC CMC with a temperature capability of 2200-2400F are on the verge of being introduced into the hot-section components ofcommercial and military gas turbine engines.Today the SiC fiber type currently recognized as the worlds best in terms ofthermo-mechanical performance is the Sylramic-iBN fiber. This fiber was previously developed by the PI at NASA GRC using patented processes to improve the high-cost commercial Sylramic fiber, which in turn was derived from anotherlow-cost low-performance commercial fiber. Although the Sylramic-iBN fiber shows state-of-the art creep and rupture resistance for use temperatures above 2550oF, NASA has shown by fundamental creep studies and model developmentthat its microstructure and creep resistance could theoretically be significantly improved to produce an Ultra HighTemperature (UHT) SiC fiber.This Phase II Seedling Fund effort has been focused on the key objective of effectively repeating the similar processes used for producing the Sylramic-iBN fiber using a design of experiments approach to first understand the cause of the less than optimum Sylramic-iBN microstructure and then attempting to develop processconditions that eliminate or minimize these key microstructural issues. In so doing, it is predicted that that theseadvanced process could result in an UHT SiC

  19. SiC Optically Modulated Field-Effect Transistor

    Science.gov (United States)

    Tabib-Azar, Massood

    2009-01-01

    An optically modulated field-effect transistor (OFET) based on a silicon carbide junction field-effect transistor (JFET) is under study as, potentially, a prototype of devices that could be useful for detecting ultraviolet light. The SiC OFET is an experimental device that is one of several devices, including commercial and experimental photodiodes, that were initially evaluated as detectors of ultraviolet light from combustion and that could be incorporated into SiC integrated circuits to be designed to function as combustion sensors. The ultraviolet-detection sensitivity of the photodiodes was found to be less than desired, such that it would be necessary to process their outputs using high-gain amplification circuitry. On the other hand, in principle, the function of the OFET could be characterized as a combination of detection and amplification. In effect, its sensitivity could be considerably greater than that of a photodiode, such that the need for amplification external to the photodetector could be reduced or eliminated. The experimental SiC OFET was made by processes similar to JFET-fabrication processes developed at Glenn Research Center. The gate of the OFET is very long, wide, and thin, relative to the gates of typical prior SiC JFETs. Unlike in prior SiC FETs, the gate is almost completely transparent to near-ultraviolet and visible light. More specifically: The OFET includes a p+ gate layer less than 1/4 m thick, through which photons can be transported efficiently to the p+/p body interface. The gate is relatively long and wide (about 0.5 by 0.5 mm), such that holes generated at the body interface form a depletion layer that modulates the conductivity of the channel between the drain and the source. The exact physical mechanism of modulation of conductivity is a subject of continuing research. It is known that injection of minority charge carriers (in this case, holes) at the interface exerts a strong effect on the channel, resulting in amplification

  20. Effect of SiC particle size on the microstructure and properties of cold-sprayed Al/SiCp composite coating

    Science.gov (United States)

    Yu, Min; Hua, Junwei

    2017-07-01

    The Al5056/SiC composite coatings were prepared by cold spraying. Experimental results show that the SiC content in the composite coating deposited with the SiC powder having an average size of 67 μm (Al5056/SiC-67) is similar to that deposited with the SiC powder having an average size of 27 μm (Al5056/SiC-27). The microhardness and cohesion strength of Al5056/SiC-67 coating are higher than those of the Al5056/SiC-27 coating. In addition, the Al5056/SiC-67 coating having a superior wear resistance because of the coarse SiC powder with a superior kinetic energy contributes to the deformation resistance of the matrix Al5056 particles.

  1. Atomic probe microscopy of 3C SiC films grown on 6H SiC substrates

    Science.gov (United States)

    Steckl, A. J.; Roth, M. D.; Powell, J. A.; Larkin, D. J.

    1993-01-01

    The surface of 3C SiC films grown on 6H SiC substrates has been studied by atomic probe microscopy in air. Atomic-scale images of the 3C SiC surface have been obtained by STM which confirm the 111 line type orientation of the cubic 3C layer grown on the 0001 plane type surface of the hexagonal 6H substrate. The nearest-neighbor atomic spacing for the 3C layer has been measured to be 3.29 +/- 0.2 A, which is within 7 percent of the bulk value. Shallow terraces in the 3C layer have been observed by STM to separate regions of very smooth growth in the vicinity of the 3C nucleation point from considerably rougher 3C surface regions. These terraces are oriented at right angles to the growth direction. Atomic force microscopy has been used to study etch pits present on the 6H substrate due to high temperature HCl cleaning prior to CVD growth of the 3C layer. The etch pits have hexagonal symmetry and vary in depth from 50 nm to 1 micron.

  2. Reactivity and wettability of SiC by Ni and Ni-Si alloys

    Energy Technology Data Exchange (ETDEWEB)

    Rado, C. [INPG, 38 - Saint Martin d`Heres (France). LTPCM; Kalogeropoulou, S. [INPG, 38 - Saint Martin d`Heres (France). LTPCM; Eustathopoulos, N. [INPG, 38 - Saint Martin d`Heres (France). LTPCM

    1996-08-01

    Wettability of SiC by Ni and Ni-Si alloys was studied at 1633K by the sessile drop technique under high vacuum or pure He. It is shown that reactivity in this system can be controlled and even nearly suppressed while obtaining good wetting and strong interface. (orig.)

  3. The HFIR 14J irradiation SiC/SiC composite and SiC fiber collaboration

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States); Kohyama, Akira; Katoh, Yutai [Kyoto Univ., Uji, Kyoto (Japan); Hasegawa, Akira [Tohoku Univ., Aramaki, Sendai (Japan); Snead, L. [Oak Ridge National Lab., TN (United States); Scholz, R.

    1998-09-01

    A short introduction with references establishes the current status of research and development of SiC{sub f}/SiC composites for fusion energy systems with respect to several key issues. The SiC fiber and composite specimen types selected for the JUPITER 14J irradiation experiment are presented together with the rationale for their selection.

  4. Characterization of femtosecond-laser-induced periodic structures on SiC substrates

    Science.gov (United States)

    Miyagawa, Reina; Ohno, Yutaka; Deura, Momoko; Yonenaga, Ichiro; Eryu, Osamu

    2018-02-01

    We investigated the crystalline state of femtosecond-laser-induced periodic structures using a transmission electron microscope (TEM). The core of the 200-nm-pitch periodic nanostructures on SiC retained a high crystalline quality continued from the SiC substrate, where the crystal orientation was aligned with that of the SiC substrate. These results suggest that the periodic nanostructures were formed by periodic etching and not by rearrangement. At high laser power, microstructures with sizes larger than 2 µm were formed on the periodic nanostructures. The microstructures were amorphous and extended from the amorphous SiC layer that covered the periodic nanostructures.

  5. Review of data on irradiation creep of monolithic SiC

    Energy Technology Data Exchange (ETDEWEB)

    Garner, F.A.; Youngblood, G.E.; Hamilton, M.L. [Pacific Northwest National Laboratory, Richland, WA (United States)

    1996-04-01

    An effort is now underway to design an irradiation creep experiment involving SiC composites to SiC fibers. In order to successfully design such an experiment, it is necessary to review and assess the available data for monolithic SiC to establish the possible bounds of creep behavior for the composite. The data available show that monolithic SiC will indeed creep at a higher rate under irradiation compared to that of thermal creep, and surprisingly, it will do so in a temperature-dependant manner that is typical of metals.

  6. Formation and characterization of porous SiC by anodic oxidation using potassium persulfate solution

    Science.gov (United States)

    Iwasa, Y.; Kamiyama, S.; Iwaya, M.; Takeuchi, T.; Akasaki, I.

    2018-01-01

    The formation process of porous SiC by anodic oxidation was investigated, aiming at the generation of pure white light with a high color rendering index (CRI) and high luminous efficiency. The efficiency of white light emission from porous SiC and its wavelength are strongly dependent on the porous structure such as the average pore size and porosity. In this study, we examined the structure and optical properties of porous SiC by adding potassium persulfate (K2S2O8) as an oxidant in HF solution to control the porosity of porous SiC formed by anodic oxidation. By increasing the amount of the oxidant, we enhanced the integrated light emission intensity of porous SiC to 81 times that of bulk SiC. Through the study of porous SiC we demonstrated that the peak wavelength of the porous SiC could be controlled from 370 to 500 nm. Porous SiC created by anodic oxidation was thus proven to have great potential for realizing high-CRI white light generation using LEDs.

  7. New Possibilities of Power Electronic Structures Using SiC Technology

    Directory of Open Access Journals (Sweden)

    Robert Sul

    2006-01-01

    Full Text Available This paper is dedicated to the recent unprecedented boom of SiC electronic technology. The contribution deals with brief survey of those properties. In particular, the differences (both good and bad between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are given for several large-scale applications on the end of the contribution. The basic properties of SiC material have been discussed already on the beginning of 80’s, also at our university.

  8. Introduction of nano-laminate Ti3SiC2 and SiC phases into Cf-C composite by liquid silicon infiltration method

    Directory of Open Access Journals (Sweden)

    Omid Yaghobizadeh

    2017-03-01

    Full Text Available The material Cf-C-SiC-Ti3SiC2 is promising for high temperature application. Due to the laminated structure and special properties, the Ti3SiC2 is one of the best reinforcements for Cf-C-SiC composites. In this paper, Cf-C-SiC-Ti3SiC2 composites were fabricated by liquid silicon infiltration (LSI method; the effect of the TiC amount on the various composites properties were studied. For samples with 0, 50 and 90 vol.% of TiC, the results show that bending strength are 168, 190, and 181 MPa; porosities are 3.2, 4.7, and 9%; the fracture toughness are 6.1, 8.9, and 7.8 MPa∙m1/2; interlaminar shear strength are 27, 36, and 30 MPa; the amount of the MAX phase are 0, 8.5, and 5.6 vol.%, respectively. These results show that amount of TiC is not the main effective parameter in synthesis of Ti3SiC2. The existence of carbon promotes the synthesis of Ti3SiC2 indicating that only sufficient carbon content can lead to the appearance of Ti3SiC2 in the LSI process.

  9. Diffusion of carbon oxides in SiO2 during SiC oxidation

    Science.gov (United States)

    Akiyama, Toru; Nakamura, Kohji; Ito, Tomonori; Kageshima, Hiroyuki; Uematsu, Masashi

    2013-03-01

    SiC is a wide-band-gap semiconductor and has an advantage to fabricate electronic devices such as MOSFETs due to the ability to thermally oxidize to SiO2. Despite many studies conducted on the oxidation of SiC, the kinetics such as diffusion and interface reaction is not fully understood. Here, we focus on the diffusion process during SiC oxidation, and clarify the diffusion mechanism of carbon oxides (CO and CO2) in SiO2 by means of density functional calculations. Our calculations demonstrate that the CO without any chemical bonds with host SiO2 is stabilized while the CO2 is incorporated between Si-O bonds of SiO2 to form a carbonate group. The energy of CO2 is found to be lower than that of CO by 3.7 eV, indicating that the most stable form of carbon oxides in SiO2 is CO2. Furthermore, the calculated energy barriers for diffusion of CO and CO2 are found to be 0.1 and 1.8 eV, respectively. These results thus imply that CO molecules easily react with oxidant such as O2 to form CO2 and the outward diffusion of resultant CO2 is rate-limiting. Indeed, the estimated activation energy for CO2 diffusion (3.5 eV) reasonably agrees with that for Si-face SiC (3.1 eV) obtained by Deal-Grove model considering product gas out-diffusion. This work was supported in part by Grant-in-Aid for Scientific Research (No. 24560025) from the Japan Society for the Promotion of Science.

  10. The influence of carbon on the structure of preceramic polymer derived SiC

    Energy Technology Data Exchange (ETDEWEB)

    Kolaya, L.E.; Lewis, N. [Lockheed Martin Corp., Schenectady, NY (United States)

    1997-01-01

    The microstructure of SiC produced from allyl-hydridopolycarbosilane (AHPCS) was studied after thermal treatments at temperatures up to 1600 C. SiC samples were prepared in contact with pyrocarbon, carbon fiber, carbon felt, carbon powder, and graphite. Each of these configurations was examined using optical, scanning electron, and transmission electron microscopy. The resultant microstructure of the SiC in the vicinity of the carbon/graphite source was different for each sample. In some cases the grains were uniform, equiaxed and about the same size as SiC grains derived from neat AHPCS. Other samples exhibited accelerated grain growth in the vicinity of the carbon, and occasionally appeared to mimic the original carbon structure. Understanding and controlling such behavior will facilitate the fabrication of polymer derived stoichiometric SiC, and also has significant implications for the fabrication of SiC/SiC composites with a pyrocarbon interface and polymer derived matrix.

  11. Synthesis of biomorphic SiC and SiO2 ceramics

    Directory of Open Access Journals (Sweden)

    ADELA EGELJA

    2008-07-01

    Full Text Available Coniferous wood (fir was transformed by pyrolysis into carbon preforms, which were subsequently converted into biomorphic ceramics by the pressure infiltration technique with colloidal silica. An in situ reaction between the silica and the carbon template occurred in the cellular wall at a high sintering temperature. Depending on the employed atmosphere, non-oxide (SiC or oxide (SiO2 ceramics were obtained. The morphology of the resulting porous ceramics and their phase composition were investigated by scanning electron microscopy (SEM/EDX and X-ray diffraction (XRD. The experimental results showed that the biomorphic cellular morphology of the wood maintained in both the SiC and silica ceramics, which consisted of only the b-SiC phase and SiO2, respectively.

  12. Improvement of Strength and Oxidation Resistance for SiC/graphite Composites by SiC coating

    Science.gov (United States)

    Yang, Wanli; Shi, Zhongqi; Li, Hongwei; Li, Zhen; Jin, Zhihao; Qiao, Guanjun

    2011-03-01

    SiC/graphite composites with exelent machinable properties and thermal shock behaviour were successfully fabricated by pressureless sintering at 1700°C in nitrogen atmosphere. A dipping infiltration process was applied to improve the strength and oxidation resistance of the composites. Dense SiC coating was covered on the composites' surface by heat-treating at 1400°C in nitrogen atmosphere with dipping infiltration of silica sol and phenolic resin solutions. The flexural strength of the SiC coated composites were improved from 60 MPa to 140 MPa obviously, and the weight loss of the SiC coated composites was reduced more than 20 % comparing with the uncoated composites by oxidation resistance testing at 1000 °C for 24 h in air. SEM micrographs shows that SiC coating was surrounded the surface of pores and XRD pattern revealed that the new layer was SiC.

  13. Hydrogen generation due to water splitting on Si - terminated 4H-Sic(0001) surfaces

    Science.gov (United States)

    Li, Qingfang; Li, Qiqi; Yang, Cuihong; Rao, Weifeng

    2018-02-01

    The chemical reactions of hydrogen gas generation via water splitting on Si-terminated 4H-SiC surfaces with or without C/Si vacancies were studied by using first-principles. We studied the reaction mechanisms of hydrogen generation on the 4H-SiC(0001) surface. Our calculations demonstrate that there are major rearrangements in surface when H2O approaches the SiC(0001) surface. The first H splitting from water can occur with ground-state electronic structures. The second H splitting involves an energy barrier of 0.65 eV. However, the energy barrier for two H atoms desorbing from the Si-face and forming H2 gas is 3.04 eV. In addition, it is found that C and Si vacancies can form easier in SiC(0001)surfaces than in SiC bulk and nanoribbons. The C/Si vacancies introduced can enhance photocatalytic activities. It is easier to split OH on SiC(0001) surface with vacancies compared to the case of clean SiC surface. H2 can form on the 4H-SiC(0001) surface with C and Si vacancies if the energy barriers of 1.02 and 2.28 eV are surmounted, respectively. Therefore, SiC(0001) surface with C vacancy has potential applications in photocatalytic water-splitting.

  14. FABRICATION AND MATERIAL ISSUES FOR THE APPLICATION OF SiC COMPOSITES TO LWR FUEL CLADDING

    Directory of Open Access Journals (Sweden)

    WEON-JU KIM

    2013-08-01

    Full Text Available The fabrication methods and requirements of the fiber, interphase, and matrix of nuclear grade SiCf/SiC composites are briefly reviewed. A CVI-processed SiCf/SiC composite with a PyC or (PyC-SiCn interphase utilizing Hi-Nicalon Type S or Tyranno SA3 fiber is currently the best combination in terms of the irradiation performance. We also describe important material issues for the application of SiC composites to LWR fuel cladding. The kinetics of the SiC corrosion under LWR conditions needs to be clarified to confirm the possibility of a burn-up extension and the cost-benefit effect of the SiC composite cladding. In addition, the development of end-plug joining technology and fission products retention capability of the ceramic composite tube would be key challenges for the successful application of SiC composite cladding.

  15. Integrated photonic filters based on SiC multilayer structures

    Energy Technology Data Exchange (ETDEWEB)

    Vieira, M.A., E-mail: mv@isel.ipl.pt [Electronics Telecommunication and Computer Dept. ISEL, R. Conselheiro Emídio Navarro, 1949-014, Lisboa (Portugal); CTS-UNINOVA, Quinta da Torre, Monte da Caparica, 2829-516, Caparica (Portugal); Vieira, M. [Electronics Telecommunication and Computer Dept. ISEL, R. Conselheiro Emídio Navarro, 1949-014, Lisboa (Portugal); CTS-UNINOVA, Quinta da Torre, Monte da Caparica, 2829-516, Caparica (Portugal); DEE-FCT-UNL, Quinta da Torre, Monte da Caparica, 2829-516, Caparica (Portugal); Louro, P.; Silva, V.; Fantoni, A. [Electronics Telecommunication and Computer Dept. ISEL, R. Conselheiro Emídio Navarro, 1949-014, Lisboa (Portugal); CTS-UNINOVA, Quinta da Torre, Monte da Caparica, 2829-516, Caparica (Portugal)

    2013-06-15

    Combined tunable WDM converters based on SiC multilayer photonic active filters are analyzed. The operation combines the properties of active long-pass and short-pass wavelength filter sections into a capacitive active band-pass filter. The sensor element is a multilayered heterostructure produced by PE-CVD. The configuration includes two stacked SiC p–i–n structures sandwiched between two transparent contacts. Transfer function characteristics are studied both theoretically and experimentally. Results show that optical bias activated photonic device combines the demultiplexing operation with the simultaneous photodetection and self amplification of an optical signal acting the device as an integrated photonic filter in the visible range. Depending on the wavelength of the external background and irradiation side, the device acts either as a short- or a long-pass band filter or as a band-stop filter. The output waveform presents a nonlinear amplitude-dependent response to the wavelengths of the input channels. A numerical simulation and a two building-blocks active circuit are presented and give insight into the physics of the device.

  16. Polycrystalline SiC fibers from organosilicon polymers

    Science.gov (United States)

    Lipowitz, Jonathan; Rabe, James A.; Zank, Gregg A.

    1991-01-01

    Various organosilicon polymers have been converted into small diameter, fine-grained silicon carbide fibers by melt spinning, crosslinking, and pyrolyzing to greater than 1600 C. The high pyrolysis temperature densifies the fiber and causes CO evolution which removes nearly all oxygen. An additive prevents the loss of strength normally associated with such treatments. Silicon carbide fibres with up to 2.6 GPa (380 ksi) tensile strength, greater than 420 GPa (greater than 60 Msi) elastic modulus, and 3.1-3.2 mg/cu m density have been prepared via this process. Their microstructure consists of greater than 95 wt pct B-SiC crystallites averaging 30-40 nm diameter, with varying amounts of graphitic carbon between the SiC grains. Under inert conditions, the fibers can be thermally aged at least 12 h/1800 C with minimal change in properties.

  17. Creep of chemically vapour deposited SiC fibres

    Science.gov (United States)

    Dicarlo, J. A.

    1986-01-01

    The creep, thermal expansion, and elastic modulus properties for chemically vapor deposited SiC fibers were measured between 1000 and 1500 C. Creep strain was observed to increase logarithmically with time, monotonically with temperature, and linearly with tensile stress up to 600 MPa. The controlling activation energy was 480 + or - 20 kJ/mole. Thermal pretreatments near 1200 and 1450 C were found to significantly reduce fiber creep. These results coupled with creep recovery observations indicate that below 1400 C fiber creep is anelastic with negligible plastic component. This allowed a simple predictive method to be developed for describing fiber total deformation as a function of time, temperature, and stress. Mechanistic analysis of the property data suggests that fiber creep is the result of beta-SiC grain boundary sliding controlled by a small percent of free silicon in the grain boundaries.

  18. Comparative assessment of 3.3kV/400A SiC MOSFET and Si IGBT power modules

    DEFF Research Database (Denmark)

    Ionita, Claudiu; Nawaz, Muhammad; Ilves, Kalle

    2017-01-01

    In this paper, a comparative evaluation between a commercial 3.3 kV/400 A Si-IGBT and a 3.3 kV/400 A SiC MOSFET power module in half-bridge configuration is presented. With a constant current of 250 A, a lower forward voltage (VDS) drop of 1.6 V is obtained for SiC MOSFET at 300 K compared to Si...... IGBT. At 400 A, the difference is reduced to 1.3 V. SiC MOSFET offers an on-state resistance of 8.7 mΩ, and blocking voltage of 3.5 kV at 300 K. Compared to Si-IGBT, a significant lower leakage current for the SiC MOSFET is obtained with varying temperature from 300 K to 400 K. SiC MOSFET offers 7.......5 times lower switching losses compared to Si-IGBTs for a supply voltage of 2000 V at 300 K. The switching losses of the SiC MOSFET are not affected by the temperature. Total energy loss increases (3.5 times) linearly with variation of the gate resistance from 6 Ω to 27 Ω. The capability of the SiC MOSFET...

  19. Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process.

    Science.gov (United States)

    Yu, Yeon-Tae; Naik, Gautam Kumar; Lim, Young-Bin; Yoon, Jeong-Mo

    2017-11-25

    The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder was investigated. The mixing ratio of Si-SiC composite nanoparticle to micron-sized SiC was optimized to 10 wt%. Vicker's hardness and relative density was increased with increasing sintering temperature and holding time. The relative density and Vicker's hardness was further increased by reaction bonding using additional activated carbon to the mixture of micron-sized SiC and nano-sized Si-SiC. The maximum relative density (97.1%) and Vicker's hardness (31.4 GPa) were recorded at 1800 °C sintering temperature for 1 min holding time, when 0.2 wt% additional activated carbon was added to the mixture of SiC/Si-SiC.

  20. Synthesis of SiC from rice husk in a plasma reactor

    Indian Academy of Sciences (India)

    Abstract. A new route for production of SiC from rice husk is reported by employing thermal plasma technique. The formation of -SiC is observed in a short time of 5 min. The samples are characterized by XRD and SEM.

  1. 10kV SiC MOSFET split output power module

    DEFF Research Database (Denmark)

    Beczkowski, Szymon; Li, Helong; Uhrenfeldt, Christian

    2015-01-01

    The poor body diode performance of the first generation of 10kV SiC MOSFETs and the parasitic turn-on phenomenon limit the performance of SiC based converters. Both these problems can potentially be mitigated using a split output topology. In this paper we present a comparison between a classical...

  2. Using of the Modern Semiconductor Devices Based on the SiC

    Directory of Open Access Journals (Sweden)

    Pavel Drabek

    2008-01-01

    Full Text Available This paper deals with possibility of application of the semiconductor devices based on the SiC (Silicon Carbide inthe power electronics. Basic synopsis of SiC based materials problems are presented, appreciation of their properties incomparison with current using power semiconductor devices ((IGBT, MOSFET, CoolFET transistors.

  3. Development of Simulink-Based SiC MOSFET Modeling Platform for Series Connected Devices

    DEFF Research Database (Denmark)

    Tsolaridis, Georgios; Ilves, Kalle; Reigosa, Paula Diaz

    2016-01-01

    A new MATLAB/Simulink-based modeling platform has been developed for SiC MOSFET power modules. The modeling platform describes the electrical behavior f a single 1.2 kV/ 350 A SiC MOSFET power module, as well as the series connection of two of them. A fast parameter initialization is followed...

  4. Detection of effective recombination centers in fluorescent SiC using thermally stimulated luminescence

    DEFF Research Database (Denmark)

    Wei, Yi; Künecke, Ulrike; Wellmann, Peter

    Two n-type 6H fluorescent SiC (f-SiC) samples have been characterized using thermally stimulated luminescence (TSL) spectroscopy, where the dominant carriers recombination regime has been found via the numerical simulations....

  5. Comparative study by IBIC of Si and SiC diodes irradiated with high energy protons

    Energy Technology Data Exchange (ETDEWEB)

    Garcia Lopez, J., E-mail: fjgl@us.es [Dpto. Física Atómica, Molecular y Nuclear, Universidad de Sevilla, 41080 Sevilla (Spain); CNA (U. Sevilla, J. Andalucia, CSIC), Av. Thomas A. Edison 7, 41092 Sevilla (Spain); Jimenez-Ramos, M.C.; Rodriguez-Ramos, M. [CNA (U. Sevilla, J. Andalucia, CSIC), Av. Thomas A. Edison 7, 41092 Sevilla (Spain); Ceballos, J. [Institute of Microelectronics of Seville, IMSE-CNM (CSIC/University of Seville), Seville 41092 (Spain); Linez, F. [Department of Applied Physics, Aalto University, 02150 Espoo (Finland); Raisanen, J. [Department of Physics, University of Helsinki, Helsinki 00014 (Finland)

    2016-04-01

    The transport properties of a series of Si and SiC diodes have been studied using the Ion Beam Induced Charge (IBIC) technique. Structural defects were induced into the samples during the irradiation with 17 MeV protons. The experimental values of the charge collection efficiency (CCE) vs bias voltages have been analyzed using a modified drift-diffusion model, which takes into account the recombination of carriers in the neutral and depletion regions. From these simulations, we have obtained the values of the carrier’s lifetime for pristine and irradiated diodes, which are found to degrade faster in the case of the SiC samples. However, the decrease of the CCE at high bias voltages is more important for the Si detectors, indicative of the lower radiation hardness of this material compared to SiC. The nature of the proton-induced defects on Si wafers has been studied by Positron Annihilation Spectroscopy (PAS) and Doppler Broadening Spectroscopy (DBS). The results suggest that the main defect detected by the positrons in p-type samples is the divacancy while for n-type at least a fraction of the positron annihilate in another defect. The concentration of defects is much lower than the number of vacancies predicted by SRIM.

  6. Velcro-Inspired SiC Fuzzy Fibers for Aerospace Applications.

    Science.gov (United States)

    Hart, Amelia H C; Koizumi, Ryota; Hamel, John; Owuor, Peter Samora; Ito, Yusuke; Ozden, Sehmus; Bhowmick, Sanjit; Syed Amanulla, Syed Asif; Tsafack, Thierry; Keyshar, Kunttal; Mital, Rahul; Hurst, Janet; Vajtai, Robert; Tiwary, Chandra Sekhar; Ajayan, Pulickel M

    2017-04-19

    The most recent and innovative silicon carbide (SiC) fiber ceramic matrix composites, used for lightweight high-heat engine parts in aerospace applications, are woven, layered, and then surrounded by a SiC ceramic matrix composite (CMC). To further improve both the mechanical properties and thermal and oxidative resistance abilities of this material, SiC nanotubes and nanowires (SiCNT/NWs) are grown on the surface of the SiC fiber via carbon nanotube conversion. This conversion utilizes the shape memory synthesis (SMS) method, starting with carbon nanotube (CNT) growth on the SiC fiber surface, to capitalize on the ease of dense surface morphology optimization and the ability to effectively engineer the CNT-SiC fiber interface to create a secure nanotube-fiber attachment. Then, by converting the CNTs to SiCNT/NWs, the relative morphology, advantageous mechanical properties, and secure connection of the initial CNT-SiC fiber architecture are retained, with the addition of high temperature and oxidation resistance. The resultant SiCNT/NW-SiC fiber can be used inside the SiC ceramic matrix composite for a high-heat turbo engine part with longer fatigue life and higher temperature resistance. The differing sides of the woven SiCNT/NWs act as the "hook and loop" mechanism of Velcro but in much smaller scale.

  7. Crucial effect of SiC particles on in situ synthesized mullite whisker reinforced Al2O3-SiC composite during microwave sintering

    Directory of Open Access Journals (Sweden)

    Meng Wei

    2017-06-01

    Full Text Available Mullite whisker reinforced Al2O3-SiC composites were in situ synthesized by microwave sintering at 1500°C for 30min. The influence of SiC particle size on heating process and properties of Al2O3-SiC composite were investigated. The XRD and SEM techniques were carried out to characterize the samples. The thermal shock resistance and flexural strength of the samples were examined through water quenching and three-point bending methods, respectively. It was found that the bridging of mullite whisker appeared between Al2O3 and SiC particles which enhanced the thermal shock resistance. A so-called local hot spot effect was proposed dependent on the coupling of SiC particles with microwave, which was the unique feature of microwave sintering. The maximal thermal shock resistance and flexural strength were obtained for the samples with SiC particle size of ~5μm.

  8. Interaction between magnetic moments and itinerant carriers in d0 ferromagnetic SiC

    Science.gov (United States)

    Liu, Yu; Yuan, Ye; Liu, Fang; Böttger, Roman; Anwand, Wolfgang; Wang, Yutian; Semisalova, Anna; Ponomaryov, Alexey N.; Lu, Xia; N'Diaye, Alpha T.; Arenholz, Elke; Heera, Viton; Skorupa, Wolfgang; Helm, Manfred; Zhou, Shengqiang

    2017-05-01

    Elucidating the interaction between magnetic moments and itinerant carriers is an important step to spintronic applications. Here, we investigate magnetic and transport properties in d0 ferromagnetic SiC single crystals prepared by postimplantation pulsed laser annealing. Magnetic moments are contributed by the p states of carbon atoms, but their magnetic circular dichroism is different from that in semi-insulating SiC samples. The anomalous Hall effect and negative magnetoresistance indicate the influence of d0 spin order on free carriers. The ferromagnetism is relatively weak in N-implanted SiC compared with that in Al-implanted SiC after annealing. The results suggest that d0 magnetic moments and itinerant carriers can interact with each other, which will facilitate the development of SiC spintronic devices with d0 ferromagnetism.

  9. A Short-Circuit Safe Operation Area Identification Criterion for SiC MOSFET Power Modules

    DEFF Research Database (Denmark)

    Reigosa, Paula Diaz; Iannuzzo, Francesco; Luo, Haoze

    2017-01-01

    This paper proposes a new method for the investigation of the short-circuit safe operation area (SCSOA) of state-of-the-art SiC MOSFET power modules rated at 1.2 kV based on the variations in SiC MOSFET electrical parameters (e.g., short-circuit current and gate–source voltage). According......-circuit-current-based criterion; and 2) the gate-voltage-based criterion. The applicability of these two criteria makes possible the SCSOA evaluation of SiC MOSFETs with some safety margins in order to avoid unnecessary failures during their SCSOA characterization. SiC MOSFET power modules from two different manufacturers...... are experimentally tested in order to demonstrate the procedure of the method. The obtained results can be used to have a better insight of the SCSOA of SiC MOSFETs and their physical limits....

  10. SiC fibre by chemical vapour deposition on tungsten filament

    Indian Academy of Sciences (India)

    A CVD system for the production of continuous SiC fibre was set up. The process of SiC coating on 19 m diameter tungsten substrate was studied. Methyl trichloro silane (CH3SiCl3) and hydrogen reactants were used. Effect of substrate temperature (1300–1500°C) and concentration of reactants on the formation of SiC ...

  11. Theoretical characterization of the SiC3H- anion.

    Science.gov (United States)

    Inostroza, N; Senent, M L

    2010-11-14

    Highly correlated ab initio methods are used to predict the equilibrium structures and spectroscopic parameters of the SiC(3)H(-) anion. The total energies and physical properties are reported using CASSCF/MRCI, RCCSD(T), and RCCSD(T)-F12 approaches and extended basis sets. The search of stable geometries leads to a total of 12 isomers (4 linear and 8 cyclic), for which electronic ground states have close-shell configurations. The stability of the linear form, l-SiC(3)H(-), is prominent. For the most stable linear isomer, the B(e) equilibrium rotational constant has been calculated with RCCSD(T) and a complete basis set. Core-correlation and vibrational effects have been taken into account to predict a B(0) of 2621.68 MHz for l-SiC(3)H(-) and 2460.48 MHz for l-SiC(3)D(-). The dipole moment of l-SiC(3)H(-) was found to be 2.9707 D with CASSCF/aug-cc-pV5Z and the electron affinity to be 2.7 eV with RCCSD(T)-F12A/aug-cc-pVTZ. Anharmonic spectroscopic parameters are derived from a quadratic, cubic, and quartic RCCSD(T)-F12A force field and second order perturbation theory. CASSCF/MRCI vertical excitations supply three metastable electronic states, (1)Σ(+) (3)Σ(+) and (3)Δ. Electron affinities calculated for a series of chains type SiC(n)H and SiC(n) (n=1-5) allow us to discuss the anion formation probabilities.

  12. Additive Manufacturing of SiC Based Ceramics and Ceramic Matrix Composites

    Science.gov (United States)

    Halbig, Michael Charles; Singh, Mrityunjay

    2015-01-01

    Silicon carbide (SiC) ceramics and SiC fiber reinforcedSiC ceramic matrix composites (SiCSiC CMCs) offer high payoff as replacements for metals in turbine engine applications due to their lighter weight, higher temperature capability, and lower cooling requirements. Additive manufacturing approaches can offer game changing technologies for the quick and low cost fabrication of parts with much greater design freedom and geometric complexity. Four approaches for developing these materials are presented. The first two utilize low cost 3D printers. The first uses pre-ceramic pastes developed as feed materials which are converted to SiC after firing. The second uses wood containing filament to print a carbonaceous preform which is infiltrated with a pre-ceramic polymer and converted to SiC. The other two approaches pursue the AM of CMCs. The first is binder jet SiC powder processing in collaboration with rp+m (Rapid Prototyping+Manufacturing). Processing optimization was pursued through SiC powder blending, infiltration with and without SiC nano powder loading, and integration of nanofibers into the powder bed. The second approach was laminated object manufacturing (LOM) in which fiber prepregs and laminates are cut to shape by a laser and stacked to form the desired part. Scanning electron microscopy was conducted on materials from all approaches with select approaches also characterized with XRD, TGA, and bend testing.

  13. SiC nanocrystals as Pt catalyst supports for fuel cell applications

    DEFF Research Database (Denmark)

    Dhiman, Rajnish; Johnson, Erik; Skou, Eivind Morten

    2013-01-01

    on the nanocrystals of SiC-SPR and SiC-NS by the polyol method. The SiC substrates are subjected to an acid treatment to introduce the surface groups, which help to anchor the Pt nano-catalysts. These SiC based catalysts have been found to have a higher electrochemical activity than commercially available Vulcan......A robust catalyst support is pivotal to Proton Exchange Membrane Fuel Cells (PEMFCs) to overcome challenges such as catalyst support corrosion, low catalyst utilization and overall capital cost. SiC is a promising candidate material which could be applied as a catalyst support in PEMFCs. Si...... based catalysts (BASF & HISPEC). These promising results signal a new era of SiC based catalysts for fuel cell...

  14. Relativistic energies for the SiC radical

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Chun-Sheng [Southwest Petroleum University, State Key Laboratory of Oil and Gas Reservoir Geology and Exploitation, Chengdu (China); Shui, Zheng-Wei [Southwest Petroleum University, School of Vocational and Technical Education, Nanchong (China)

    2015-11-15

    The analytical solutions of the Dirac equation with the modified Rosen-Morse potential energy model have been explored. Under the condition of the spin symmetry, we present the bound state energy equation. In the nonrelativistic limit, the relativistic energy equation becomes the nonrelativistic energy form deduced within the framework of the Schroedinger equation. We find that the relativistic effect of the relative motion of the ions leads to a little decrease in the vibrational energies when the vector potential is equal to the scalar potential for the electronic ground state of the SiC radical, while to an increase in those if the vector potential is greater than the scalar potential. (orig.)

  15. SiC MOSFET Switching Power Amplifier Project Summary

    Science.gov (United States)

    Miller, Kenneth E.; Ziemba, Timothy; Prager, James; Slobodov, Ilia; Henson, Alex

    2017-10-01

    Eagle Harbor Technologies has completed a Phase I/II program to develop SiC MOSFET based Switching Power Amplifiers (SPA) for precision magnet control in fusion science applications. During this program, EHT developed several units have been delivered to the Helicity Injected Torus (HIT) experiment at the University of Washington to drive both the voltage and flux circuits of the helicity injectors. These units are capable of switching 700 V at 100 kHz with an adjustable duty cycle from 10 - 90% and a combined total output current of 96 kA for 4 ms (at max current). The SPAs switching is controlled by the microcontroller at HIT, which adjusts the duty cycle to maintain a specific waveform in the injector. The SPAs include overcurrent and shoot-through protection circuity. EHT will present an overview of the program including final results for the SPA waveforms. With support of DOE SBIR.

  16. FABRICATION AND MATERIAL ISSUES FOR THE APPLICATION OF SiC COMPOSITES TO LWR FUEL CLADDING

    OpenAIRE

    Kim, Weon-Ju; Kim, Daejong; Park, Ji Yeon

    2013-01-01

    The fabrication methods and requirements of the fiber, interphase, and matrix of nuclear grade SiCf/SiC composites are briefly reviewed. A CVI-processed SiCf/SiC composite with a PyC or (PyC-SiC)n interphase utilizing Hi-Nicalon Type S or Tyranno SA3 fiber is currently the best combination in terms of the irradiation performance. We also describe important material issues for the application of SiC composites to LWR fuel cladding. The kinetics of the SiC corrosion under LWR conditions needs t...

  17. Electrocatalysis of a SiC particle-modified glassy carbon electrode for the oxidation of adrenaline in a KRPB physiological solution

    Directory of Open Access Journals (Sweden)

    LEI WANG

    2005-05-01

    Full Text Available The electrocatalytic properties of a SiC particle-modified glassy carbon electrode (MGC for adrenaline oxidation were studied by cyclic voltammetry, double- potential slep chronoculometry and electrochemical impedance spectroscopy in a pH 7.4 physiological Kres–Ringer phosphate buffer (KRPB solution. It was shown that modification of the electrode with SiC particles has a marked electrocatalytic effect on the electrochemical reaction of adrenaline, i.e., the activity and the reversibility of the MGC electrode were significantly improved compared to an ummodified electrode. This was attributed to the adsorption effect of the electroactive adrenaline molecules on the MGC electrode surface.

  18. Synthesis of One-Dimensional SiC Nanostructures from a Glassy Buckypaper

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Mengning; Star, Alexander

    2013-02-21

    A simple and scalable synthetic strategy was developed for the fabrication of one-dimensional SiC nanostructures - nanorods and nanowires. Thin sheets of single-walled carbon nanotubes (SWNTs) were prepared by vacuum filtration and were washed repeatedly with sodium silicate (Na₂SiO₃) solution. The resulting “glassy buckypaper” was heated at 1300 - 1500 °C under Ar/H₂ to allow a solid state reaction between C and Si precursors to form a variety of SiC nanostructures. The morphology and crystal structures of SiC nanorods and nanowires were characterized using scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), energy dispersive xray spectroscopy (EDX), electron diffraction (ED) and x-ray diffraction (XRD) techniques. Furthermore, electrical conductance measurements were performed on SiC nanorods, demonstrating their potential applications in high-temperature sensors and control systems.

  19. Ultra-reducing conditions in average mantle peridotites and in podiform chromitites: a thermodynamic model for moissanite (SiC) formation

    Science.gov (United States)

    Golubkova, Anastasia; Schmidt, Max W.; Connolly, James A. D.

    2016-05-01

    Natural moissanite (SiC) is reported from mantle-derived samples ranging from lithospheric mantle keel diamonds to serpentinites to podiform chromitites in ophiolites related to suprasubduction zone settings (Luobusa, Dongqiao, Semail, and Ray-Iz). To simulate ultra-reducing conditions and the formation of moissanite, we compiled thermodynamic data for alloys (Fe-Si-C and Fe-Cr), carbides (Fe3C, Fe7C3, SiC), and Fe-silicides; these data were augmented by commonly used thermodynamic data for silicates and oxides. Computed phase diagram sections then constrain the P- T- fO2 conditions of SiC stability in the upper mantle. Our results demonstrate that: Moissanite only occurs at oxygen fugacities 6.5-7.5 log units below the iron-wustite buffer; moissanite and chromite cannot stably coexist; increasing pressure does not lead to the stability of this mineral pair; and silicates that coexist with moissanite have X Mg > 0.99. At upper mantle conditions, chromite reduces to Fe-Cr alloy at fO2 values 3.7-5.3 log units above the moissanite-olivine-(ortho)pyroxene-carbon (graphite or diamond) buffer (MOOC). The occurrence of SiC in chromitites and the absence of domains with almost Fe-free silicates suggest that ultra-reducing conditions allowing for SiC are confined to grain scale microenvironments. In contrast to previous ultra-high-pressure and/or temperature hypotheses for SiC origin, we postulate a low to moderate temperature mechanism, which operates via ultra-reducing fluids. In this model, graphite-/diamond-saturated moderately reducing fluids evolve in chemical isolation from the bulk rock to ultra-reducing methane-dominated fluids by sequestering H2O into hydrous phases (serpentine, brucite, phase A). Carbon isotope compositions of moissanite are consistent with an origin of such fluids from sediments originally rich in organic compounds. Findings of SiC within rocks mostly comprised by hydrous phases (serpentine + brucite) support this model. Both the hydrous phases

  20. Fabrication of SiC hardened bodies with geopolymer binders using a warm press method

    Science.gov (United States)

    Hashimoto, Shinobu; Kubota, Kosuke; Ando, Kotaro; Tsutani, Masaki; Diko, Yusuke; Honda, Sawao; Iwamoto, Yuji

    2017-09-01

    Novel SiC hardened bodies with geopolymer binders using a warm press method were fabricated. In this study, two methods were tried. The first method used a conventional powder mixture consisted of SiC and geopolymer particles as starting materials. In the second method, SiC particles was first immersed in hydrochloric acid solution with 2.5 mol/L and then heated at 1200 °C for 6 h to form a reactive aluminosilicate layer at the surface of SiC particles. Subsequently, the resultant SiC particles mixed with a fixed amount of sodium hydroxide solution with various concentrations were put into a steel mold which was set in the warm press device. This second method was defined as a chemical assist processing. As this warm press condition, heating temperature was 130 °C and pressed at 240 MPa for 30 min simultaneously. When a powder mixture consisted of geopolymer and SiC particles was used, the compressive strength of the hardened bodies decreased with the amount of SiC particles. On the contrary, when the chemical assist processing method was selected, the compressive strength of the hardened bodies increased with the concentration of the sodium hydroxide solution. When the sodium hydroxide solution was 4 mol/L was used, the compressive strength of the hardened body reached to 170 MPa which was the maximum value in this study.

  1. Fracture strength estimation of SiC block for IS process

    Energy Technology Data Exchange (ETDEWEB)

    Takegami, Hiroaki, E-mail: takegami.hiroaki@jaea.go.jp [Japan Atomic Energy Agency, 4002, Narita-cho, Oarai-machi, Higashiibaraki-gun, Ibaraki 311-1393 (Japan); Terada, Atsuhiko; Onuki, Kaoru; Hino, Ryutaro [Japan Atomic Energy Agency, 4002, Narita-cho, Oarai-machi, Higashiibaraki-gun, Ibaraki 311-1393 (Japan)

    2011-12-15

    Highlights: Black-Right-Pointing-Pointer We proposed a strength estimation method for large-scale SiC structure. Black-Right-Pointing-Pointer The strength estimation was carried out by using the effective volume and the optimized Weibull modulus of SiC. Black-Right-Pointing-Pointer The fracture strength of small-scale SiC obtained from fracture test was well within the estimation of the proposed method. - Abstract: The Japan Atomic Energy Agency has been conducting R and D on thermochemical water-splitting Iodine-Sulfur (IS) process for hydrogen production to meet massive demand in the future hydrogen economy. A concept of sulfuric acid decomposer was developed featuring a heat exchanger block made of SiC. Recent activity has focused on the reliability assessment of SiC block. Although knowing the strength of SiC block is important for the reliability assessment, it is difficult to evaluate a large-scale ceramics structure without destructive test. In this study, a novel approach for strength estimation of SiC structure was proposed. Since accurate strength estimation of individual ceramics structure is difficult, a prediction method of minimum strength in the structure of the same design was proposed based on effective volume theory and optimized Weibull modulus. Optimum value of the Weibull modulus was determined for estimating the lowest strength. The strength estimation line was developed by using the determined modulus. The validity of the line was verified by destructive test of SiC block model, which is small-scale model of the SiC block. The fracture strength of small-scale model satisfied the predicted strength.

  2. Propagation of misfit dislocations from buffer/Si interface into Si

    Science.gov (United States)

    Liliental-Weber, Zuzanna [El Sobrante, CA; Maltez, Rogerio Luis [Porto Alegre, BR; Morkoc, Hadis [Richmond, VA; Xie, Jinqiao [Raleigh, VA

    2011-08-30

    Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

  3. Transformation from amorphous to nano-crystalline SiC thin films ...

    Indian Academy of Sciences (India)

    Administrator

    Abstract. Silicon carbide (SiC) thin films were deposited on Si(111) by the hot wire chemical vapour deposi- tion (HWCVD) technique using silane (SiH4) and methane (CH4) gases without hydrogen dilution. The effects of SiH4 to CH4 gas flow ratio (R) on the structural properties, chemical composition and ...

  4. Transformation from amorphous to nano-crystalline SiC thin films ...

    Indian Academy of Sciences (India)

    Silicon carbide (SiC) thin films were deposited on Si(111) by the hot wire chemical vapour deposition (HWCVD) technique using silane (SiH4) and methane (CH4) gases without hydrogen dilution. The effects of SiH4 to CH4 gas flow ratio (R) on the structural properties, chemical composition and photoluminescence (PL) ...

  5. Oxidation of TaSi2-Containing ZrB2-SiC Ultra-High Temperature Materials

    Science.gov (United States)

    Opila, Elizabeth J.; Smith, Jim; Levine, Stanley R.; Lorincz, Jonathan; Reigel, Marissa

    2010-01-01

    Hot pressed coupons of composition ZrB2-20 v% SiC-5 v% TaSi2 and ZrB2-20 v% SiC-20 v% TaSi2 were oxidized in stagnant air at temperatures of 1627 and 1927C for one, five and ten 10-minute cycles. The oxidation reactions were characterized by weight change kinetics, x-ray diffraction, and SEM/EDS. Detailed WDS/microprobe quantitative analyses of the oxidation products were conducted for the ZrB2-20 v% SiC-20 v% TaSi2 sample oxidized for five 10-minute cycles at 1927C. Oxidation kinetics and product formation were compared to ZrB2-20 v% SiC with no TaSi2 additions. It was found that the 20 v% TaSi2 composition exhibited improved oxidation resistance relative to the material with no TaSi2 additions at 1627C. However, for exposures at 1927C less oxidation resistance and extensive liquid phase formation were observed compared to the material with no TaSi2 additions. Attempts to limit the liquid phase formation by reducing the TaSi2 content to 5 v% were unsuccessful. In addition, the enhanced oxidation resistance at 1627C due to 20 v% TaSi2 additions was not achieved at the 5 v% addition level. The observed oxidation product evolution is discussed in terms of thermodynamics and phase equilibria for the TaSi2-containing ZrB2-SiC material system. TaSi2-additions to ZrB2-SiC at any level are not recommended for ultra-high temperature (>1900C) applications due to excessive liquid phase formation.

  6. An Investigation of DC-DC Converter Power Density Using Si and SiC MOSFETS

    Science.gov (United States)

    2010-05-07

    were fabricated by Cree Inc., for use in vehicular converter applications. The MOSFETs are rated for 1200V and 50A. Device characteristics were...Washington, DC, 2008. [5] Callanan, R. J., and Et Al. "Recent Progress in SiC DMOSFETs and JBS Diodes at Cree ", 34th Annual Conference of IEEE...1 -- 16 X 2 LCD Module LCD_ON, -- Power ON/OFF LCD_BLON, -- Back Light ON/OFF

  7. Effects of SiC and MgO on aluminabased ceramic foams filters

    Directory of Open Access Journals (Sweden)

    CAO Da-li

    2007-11-01

    Full Text Available Alumina-based foam ceramic filters were fabricated by using alumina, SiC, magnesia powder as major materials. It has been found that this ceramic filter has a uniform macrostructure for filtering molten metals. The influences of SiC and magnesia content, the sintering temperatures on ceramic properties were discussed. Aluminabased foam ceramic filters containing 2.2 mass% magnesia and 7.6 mass% SiC has a compressive strength of 1.36 MPa and a thermal shock resistance of 5 times. Its main phases after 1 hour sintering at 1 500 consist of alumina, silicon carbide, spinel and mullite.

  8. Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices (Invited)

    Science.gov (United States)

    Neudeck, Philip G.

    1999-01-01

    As illustrated by the invited paper at this conference and other works, SiC wafers and epilayers contain a variety of crystallographic imperfections, including micropipes, closed-core screw dislocations, grain boundaries, basal plane dislocations, heteropolytypic inclusions, and surfaces that are often damaged and contain atomically rough features like step bunching and growth pits or hillocks. Present understanding of the operational impact of various crystal imperfections on SiC electrical devices is reviewed, with an emphasis placed on high-field SiC power devices and circuits.

  9. A route to strong p-doping of epitaxial graphene on SiC

    KAUST Repository

    Cheng, Yingchun

    2010-11-09

    The effects of Au intercalation on the electronic properties of epitaxialgraphenegrown on SiC{0001} substrates are studied using first principles calculations. A graphenemonolayer on SiC{0001} restores the shape of the pristine graphene dispersion, where doping levels between strongly n-doped and weakly p-doped can be achieved by altering the Au coverage. We predict that Au intercalation between the two C layers of bilayer graphenegrown on SiC{0001} makes it possible to achieve a strongly p-doped graphene state, where the p-doping level can be controlled by means of the Au coverage.

  10. Effect of different oxide thickness on the bending Young's modulus of SiO2@SiC nanowires.

    Science.gov (United States)

    Ma, Jinyao; Liu, Yanping; Hao, Peida; Wang, Jin; Zhang, Yuefei

    2016-01-07

    The surface or sheath effect on core-shell nanowires plays an important role in the nanomechanical test. In the past few years, SiC nanowires have been synthesized using various methods with an uneven and uncontrollable amorphous silicon dioxide sheath. The bending Young's modulus of the SiC nanowires has scarcely been measured, and the effect of the oxide sheath has not been taken into account. In this paper, SiO2-coated SiC (SiO2@SiC) nanowires were synthesized using the chemical vapor deposition method, followed by thermal reduction. Scanning electron microscopy and transmission electron microscopy show that the SiO2@SiC nanowires in this paper have diameters ranging from 130 ~ 150 nm, with the average thickness of SiO2 layer approximately 14 nm. After different processing times with 1 mol/L NaOH, approximately 5 nm, 9 nm, 14 nm silicon dioxide layers were obtained. The results of the three-point-bending test show that the modulus of SiO2@SiC nanowires is found to clearly decrease with the increase in oxide thickness and the influence of the oxide sheath should not be ignored when the layer thickness is above 5 nm. Young's modulus of the SiO2@SiC nanowires calculated in this study by the core-shell structure model is in good agreement with the theoretical value.

  11. Switching Investigations on a SiC MOSFET in a TO-247 Package

    DEFF Research Database (Denmark)

    Anthon, Alexander; Hernandez Botella, Juan Carlos; Zhang, Zhe

    2014-01-01

    This paper deals with the switching behavior of a SiC MOSFET in a TO-247 package. Based on simulations, critical parasitic inductances in the circuit layout are analyzed and their effect on the switching losses highlighted. Especially the common source inductance, a critical parameter in a TO-247...... package, has a major influence on the switching energy. Crucial design guidelines for an improved double pulse test circuit are introduced which are used for practical investigations on the switching behavior. Switching energies of a SiC MOSFET in a TO-247 package is measured depending on varying gate...... resistance and loop inductances. With total switching energy of 340.24 μJ, the SiC MOSFET has more than six times lower switching losses than a regular Si IGBT. Implementing the SiC switches in a 3 kW T-Type inverter topology, efficiency improvements of 0.8 % are achieved and maximum efficiency of 97...

  12. Dimensional stability and anisotropy of SiC and SiC-based composites in transition swelling regime

    Science.gov (United States)

    Katoh, Yutai; Koyanagi, Takaaki; McDuffee, Joel L.; Snead, Lance L.; Yueh, Ken

    2018-02-01

    Swelling, or volumetric expansion, is an inevitable consequence of the atomic displacement damage in crystalline silicon carbide (SiC) caused by energetic neutron irradiation. Because of its steep temperature and dose dependence, understanding swelling is essential for designing SiC-based components for nuclear applications. In this study, swelling behaviors of monolithic CVD SiC and nuclear grade SiC fiber - SiC matrix (SiC/SiC) composites were accurately determined, supported by the irradiation temperature determination for individual samples, following neutron irradiation within the lower transition swelling temperature regime. Slightly anisotropic swelling behaviors were found for the SiC/SiC samples and attributed primarily to the combined effects of the pre-existing microcracking, fiber architecture, and specimen dimension. A semi-empirical model of SiC swelling was calibrated and presented. Finally, implications of the refined model to selected swelling-related issues for SiC-based nuclar reactor components are discussed.

  13. Characterisation of 10 kV 10 A SiC MOSFET

    DEFF Research Database (Denmark)

    Eni, Emanuel-Petre; Incau, Bogdan Ioan; Munk-Nielsen, Stig

    2015-01-01

    The objective of this paper is to characterize and evaluate the static and dynamic performances of 10 kV 10 A 4H-SIC MOSFETs at high temperatures. The results show good electrical performances of the SiC MOSFETs for high temperature operations. The double-pulse test results showed interesting beh...

  14. Reaction-bonded Si3N4 and SiC matrix composites

    Science.gov (United States)

    Bhatt, Ramakrishna T.; Behrendt, Donald R.

    1992-01-01

    A development status evaluation is presented for the reaction-bonded SiC- and Si3N4-matrix types of fiber-reinforced ceramic-matrix composite (FRCMC). A variety of reaction-bonding methods are being pursued for FRCMC fabrication: CVI, CVD, directed metal oxidation, and self-propagating high-temperature synthesis. Due to their high specific modulus and strength, toughness, and fabricability, reaction-bonded FRCMC are important candidate materials for such heat-engine components as combustor liners, nozzles, and turbine and stator blading. The improvement of long-term oxidative stability in these composites is a major goal of current research.

  15. Comparative Study of Si and SiC MOSFETs for High Voltage Class D Audio Amplifiers

    DEFF Research Database (Denmark)

    Nielsen, Dennis; Knott, Arnold; Andersen, Michael A. E.

    2014-01-01

    Silicon (Si) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are traditional utilised in class D audio amplifiers. It has been proposed to replace the traditional inefficient electrodynamic transducer with the electrostatic transducer. This imposes new high voltage requirements...... on the MOSFETs of class D amplifiers, and significantly reduces the selection of suitable MOSFETs. As a consequence it is investigated, if Silicon-Carbide (SiC) MOSFETs could represent a valid alternative. The theory of pulse timing errors are revisited for the application of high voltage and capactive loaded...

  16. Mechanism of Si intercalation in defective graphene on SiC

    KAUST Repository

    Kaloni, Thaneshwor P.

    2012-10-01

    Previously reported experimental findings on Si-intercalated graphene on SiC(0001) seem to indicate the possibility of an intercalation process based on the migration of the intercalant through atomic defects in the graphene sheet. We employ density functional theory to show that such a process is in fact feasible and obtain insight into its details. By means of total energy and nudged elastic band calculations we are able to establish the mechanism on an atomic level and to determine the driving forces involved in the different steps of the intercalation process through atomic defects.

  17. Fabrication of mullite-bonded porous SiC ceramics from multilayer-coated SiC particles through sol-gel and in-situ polymerization techniques

    Science.gov (United States)

    Ebrahimpour, Omid

    In this work, mullite-bonded porous silicon carbide (SiC) ceramics were prepared via a reaction bonding technique with the assistance of a sol-gel technique or in-situ polymerization as well as a combination of these techniques. In a typical procedure, SiC particles were first coated by alumina using calcined powder and alumina sol via a sol-gel technique followed by drying and passing through a screen. Subsequently, they were coated with the desired amount of polyethylene via an in-situ polymerization technique in a slurry phase reactor using a Ziegler-Natta catalyst. Afterward, the coated powders were dried again and passed through a screen before being pressed into a rectangular mold to make a green body. During the heating process, the polyethylene was burnt out to form pores at a temperature of about 500°C. Increasing the temperature above 800°C led to the partial oxidation of SiC particles to silica. At higher temperatures (above 1400°C) derived silica reacted with alumina to form mullite, which bonds SiC particles together. The porous SiC specimens were characterized with various techniques. The first part of the project was devoted to investigating the oxidation of SiC particles using a Thermogravimetric analysis (TGA) apparatus. The effects of particle size (micro and nano) and oxidation temperature (910°C--1010°C) as well as the initial mass of SiC particles in TGA on the oxidation behaviour of SiC powders were evaluated. To illustrate the oxidation rate of SiC in the packed bed state, a new kinetic model, which takes into account all of the diffusion steps (bulk, inter and intra particle diffusion) and surface oxidation rate, was proposed. Furthermore, the oxidation of SiC particles was analyzed by the X-ray Diffraction (XRD) technique. The effect of different alumina sources (calcined Al2O 3, alumina sol or a combination of the two) on the mechanical, physical, and crystalline structure of mullite-bonded porous SiC ceramics was studied in the

  18. Characterization of rare-earth doped Si 3 N4 /SiC micro/nanocomposites

    Directory of Open Access Journals (Sweden)

    Peter Tatarko

    2010-03-01

    Full Text Available Influence of various rare-earth oxide additives (La2O3, Nd2O3, Sm2O3, Y2O3, Yb2O3 and Lu2O3 on the mechanical properties of hot-pressed silicon nitride and silicon nitride/silicon carbide micro/nano-composites has been investigated. The bimodal character of microstructures was observed in all studied materials where elongated β-Si3N4 grains were embedded in the matrix of much finer Si3N4 grains. The fracture toughness values increased with decreasing ionic radius of rare-earth elements. The fracture toughness of composites was always lower than that of monoliths due to their finer Si3N4/SiC microstructures. Similarly, the hardness and bending strength values increased with decreasing ionic radius of rare-earth elements either in monoliths or composites. On the other hand, the positive influence of finer microstructure of the composites on strength was not observed due to the present defects in the form of SiC clusters and non-reacted carbon zones. Wear resistance at room temperature also increased with decreasing ionic radius of rare-earth element. Significantly improved creep resistance was observed in case either of composite materials or materials with smaller radius of RE3+.

  19. A study of metal-ceramic wettability in SiC-Al using dynamic melt infiltration of SiC

    Science.gov (United States)

    Asthana, R.; Rohatgi, P. K.

    1993-01-01

    Pressure-assisted infiltration with a 2014 Al alloy of plain and Cu-coated single crystal platelets of alpha silicon carbide was used to study particulate wettability under dynamic conditions relevant to pressure casting of metal-matrix composites. The total penetration length of infiltrant metal in porous compacts was measured at the conclusion of solidification as a function of pressure, infiltration time, and SiC size for both plain and Cu-coated SiC. The experimental data were analyzed to obtain a threshold pressure for the effect of melt intrusion through SiC compacts. The threshold pressure was taken either directly as a measure of wettability or converted to an effective wetting angle using the Young-Laplace capillary equation. Cu coating resulted in partial but beneficial improvements in wettability as a result of its dissolution in the melt, compared to uncoated SiC.

  20. Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC

    Science.gov (United States)

    Kruskopf, Mattias; Momeni Pakdehi, Davood; Pierz, Klaus; Wundrack, Stefan; Stosch, Rainer; Dziomba, Thorsten; Götz, Martin; Baringhaus, Jens; Aprojanz, Johannes; Tegenkamp, Christoph; Lidzba, Jakob; Seyller, Thomas; Hohls, Frank; Ahlers, Franz J.; Schumacher, Hans W.

    2016-12-01

    We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultra-smooth defect- and bilayer-free graphene sheets with an unprecedented reproducibility, a necessary prerequisite for wafer-scale fabrication of high quality graphene-based electronic devices. The inherent but unfavorable formation of high SiC surface terrace steps during high temperature sublimation growth is suppressed by rapid formation of the graphene buffer layer which stabilizes the SiC surface. The enhanced nucleation is enforced by decomposition of deposited polymer adsorbate which acts as a carbon source. Unique to this method are the conservation of mainly 0.25 and 0.5 nm high surface steps and the formation of bilayer-free graphene on an area only limited by the size of the sample. This makes the polymer-assisted sublimation growth technique a promising method for commercial wafer scale epitaxial graphene fabrication. The extraordinary electronic quality is evidenced by quantum resistance metrology at 4.2 K showing ultra-high precision and high electron mobility on mm scale devices comparable to state-of-the-art graphene.

  1. Structural and thermal characterization of polyvinylalcohol grafted SiC nanocrystals

    Science.gov (United States)

    Saini, Isha; Sharma, Annu; Dhiman, Rajnish; Ram, Sita; Sharma, Pawan K.

    2017-07-01

    In the present work, Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, x-ray diffraction (XRD), transmission electron microscopy (TEM) and scanning electron microscopy (SEM) were employed to ascertain the grafting of an organic layer of polyvinyl alcohol (PVA) onto the surface of semiconducting SiC nanocrystals using a novel method. FTIR spectroscopy reveals the introduction of new peaks corresponding to various functional groups of PVA alongwith the presence of characteristic Si-C vibrational peak in the spectra of grafted SiC nanocrystals. Raman spectra depict the presence of changes introduced in the characteristic TO and LO mode of vibration of SiC nanocrystals after grafting procedure. XRD analysis confirmed that the grafting procedure did not alter the crystalline geometry of SiC nanocrystals. TEM and SEM images further support the FTIR and Raman spectroscopic results and confirm the presence of PVA layer around SiC nanocrystals. Thermal degradation behavior of PVA-g-SiC nanocrystals has been studied using TGA analysis.

  2. Silicon Carbide (SiC) Power Processing Unit (PPU) for Hall Effect Thrusters Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In this SBIR project, APEI, Inc. is proposing to develop a high efficiency, rad-hard 3.8 kW silicon carbide (SiC) Power Processing Unit (PPU) for Hall Effect...

  3. Light extraction efficiency enhancement for fluorescent SiC based white light-emitting diodes

    DEFF Research Database (Denmark)

    Ou, Haiyan; Ou, Yiyu; Argyraki, Aikaterini

    Fluorescent SiC based white light-emitting diodes(LEDs) light source, as an innovative energy-efficient light source, would even have longer lifetime, better light quality and eliminated blue-tone effect, compared to the current phosphor based white LED light source. In this paper, the yellow....... At a device level, the focus is on improving the light extraction efficiency due to the rather high refractive index of SiC by nanostructuring the surface of SiC. Both periodic nanostructures made by e-beam lithography and nanosphere lithography and random nanostructures made by self-assembled Au nanosphere...... fluorescent Boron-Nitrogen co-doped 6H SiC is optimized in terms of source material, growth condition, dopant concentration, and carrier lifetime by using photoluminescence, pump-probe spectroscopy etc. The internal quantum efficiency is measured and the methods to increase the efficiency have been explored...

  4. Research Progress on Preparation for Biomass-based SiC Ceramic

    Directory of Open Access Journals (Sweden)

    CUI He-shuai

    2017-08-01

    Full Text Available Silicon carbide (SiC ceramics prepared by the conventional process has excellent properties and wide application prospects, but the increased cost of high-temperature preparation process restricts its further development. In contrast, the abundant porous structure of biomass makes itself to be ideal replacement of SiC ceramic prepared at low temperature. This paper reviewed the structure characteristics, preparation methods, pyrolysis mechanism and influence parameters of biomass-based SiC ceramic, and eventually explored the current problems and development trends of the pretreatment of carbon source and silicon source, the pyrolysis process and the application research on the preparation for biomass-based SiC ceramic.

  5. Breakthrough in Power Electronics from SiC: May 25, 2004 - May 31, 2005

    Energy Technology Data Exchange (ETDEWEB)

    Marckx, D. A.

    2006-03-01

    This report explores the premise that silicon carbide (SiC) devices would reduce substantially the cost of energy of large wind turbines that need power electronics for variable speed generation systems.

  6. Promise and Challenges of High-Voltage SiC Bipolar Power Devices

    Directory of Open Access Journals (Sweden)

    Tsunenobu Kimoto

    2016-11-01

    Full Text Available Although various silicon carbide (SiC power devices with very high blocking voltages over 10 kV have been demonstrated, basic issues associated with the device operation are still not well understood. In this paper, the promise and limitations of high-voltage SiC bipolar devices are presented, taking account of the injection-level dependence of carrier lifetimes. It is shown that the major limitation of SiC bipolar devices originates from band-to-band recombination, which becomes significant at a high-injection level. A trial of unipolar/bipolar hybrid operation to reduce power loss is introduced, and an 11 kV SiC hybrid (merged pin-Schottky diodes is experimentally demonstrated. The fabricated diodes with an epitaxial anode exhibit much better forward characteristics than diodes with an implanted anode. The temperature dependence of forward characteristics is discussed.

  7. Decentralized Nonlinear Controller Based SiC Parallel DC-DC Converter Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposal is aimed at demonstrating the feasibility of a Decentralized Control based SiC Parallel DC-DC Converter Unit (DDCU) with targeted application for...

  8. Carbon Nanotube (CNT) and Carbon Fiber Reinforced SiC Optical Components Project

    Data.gov (United States)

    National Aeronautics and Space Administration — M Cubed has developed and patented technology to make carbon fiber reinforced SiC composites and components. In addition, the feasibility of doubling the toughness...

  9. Synthesis of boron nitride nanotubes with SiC nanowire as template

    Energy Technology Data Exchange (ETDEWEB)

    Zhong, B.; Song, L. [School of Materials Science and Engineering, Harbin Institute of Technology at Weihai, Weihai 264209 (China); Huang, X.X. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Wen, G.W., E-mail: g.wen@hit.edu.cn [School of Materials Science and Engineering, Harbin Institute of Technology at Weihai, Weihai 264209 (China); School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Xia, L. [School of Materials Science and Engineering, Harbin Institute of Technology at Weihai, Weihai 264209 (China)

    2011-09-15

    Highlights: {yields} Boron nitride nanotubes (BNNTs) have been fabricated using SiC nanowires as template. {yields} SiC nanowires could be effectively etched out by the vapors decomposed from ammonia borane, leading to the formation of BNNTs. {yields} A template self-sacrificing mechanism is responsible for the formation of BNNTs. -- Abstract: A novel template method for the preparation of boron nitride nanotubes (BNNTs) using SiC nanowire as template and ammonia borane as precursor is reported. We find out that the SiC nanowires could be effectively etched out by the vapors decomposed from ammonia borane, leading to the formation of BNNTs. The as-prepared products are well characterized by means of complementary analytical techniques. A possible formation mechanism is disclosed. The method developed here paves the way for large scale production of BNNTs.

  10. Large area SiC coating technology of RBSC for semiconductor processing component

    Energy Technology Data Exchange (ETDEWEB)

    Park, Ji Yeon; Kim, Weon Ju

    2001-06-01

    As the semiconductor process is developed for the larger area wafer and the larger-scale integration, the processing fixtures are required to have excellent mechanical and high temperature properties. This highlights the importance of silicon carbide-based materials as a substitute for quartz-based susceptors. In this study, SiC coating technology on reaction sintered (RS) SiC with thickness variation of +/- 10% within a diameter of 8 inch by low pressure chemical vapor deposition has been developed for making a plate type SiC fixture such as heater, baffle, etc., with a diameter of 12 inch. Additionally, a state of art on fabrication technology and products of the current commercial SiC fixtures has been described.

  11. SUPERPOLISHED SI COATED SIC OPTICS FOR RAPID MANUFACTURE OF LARGE APERTURE UV AND EUV TELESCOPES Project

    Data.gov (United States)

    National Aeronautics and Space Administration — SSG/Tinsley proposes an innovative optical manufacturing process that will allow the advancement of state-of-the-art Silicon Carbide (SiC) mirrors for large aperture...

  12. Visible Blind SiC Array with Low Noise Readout Project

    Data.gov (United States)

    National Aeronautics and Space Administration — To date, we have (i) designed and fabricated both common cathode and common anode SiC detector arrays; (ii) designed and fabricated the detector packaging (FPA), and...

  13. Modeling the Elastic Modulus of 2D Woven CVI SiC Composites

    Science.gov (United States)

    Morscher, Gregory N.

    2006-01-01

    The use of fiber, interphase, CVI SiC minicomposites as structural elements for 2D-woven SiC fiber reinforced chemically vapor infiltrated (CVI) SiC matrix composites is demonstrated to be a viable approach to model the elastic modulus of these composite systems when tensile loaded in an orthogonal direction. The 0deg (loading direction) and 90deg (perpendicular to loading direction) oriented minicomposites as well as the open porosity and excess SiC associated with CVI SiC composites were all modeled as parallel elements using simple Rule of Mixtures techniques. Excellent agreement for a variety of 2D woven Hi-Nicalon(TradeMark) fiber-reinforced and Sylramic-iBN reinforced CVI SiC matrix composites that differed in numbers of plies, constituent content, thickness, density, and number of woven tows in either direction (i.e, balanced weaves versus unbalanced weaves) was achieved. It was found that elastic modulus was not only dependent on constituent content, but also the degree to which 90deg minicomposites carried load. This depended on the degree of interaction between 90deg and 0deg minicomposites which was quantified to some extent by composite density. The relationships developed here for elastic modulus only necessitated the knowledge of the fractional contents of fiber, interphase and CVI SiC as well as the tow size and shape. It was concluded that such relationships are fairly robust for orthogonally loaded 2D woven CVI SiC composite system and can be implemented by ceramic matrix composite component modelers and designers for modeling the local stiffness in simple or complex parts fabricated with variable constituent contents.

  14. Effect of dopants on the morphology of porous SiC

    DEFF Research Database (Denmark)

    Lu, Weifang; Iwasa, Yoshimi; Ou, Yiyu

    Porous SiC samples with different doping level were fabricated and investigated by using anodic oxidation method. The morphology of the porous structures was explained by space charge layer width, which was affected by the free carrier-dopants concentration.......Porous SiC samples with different doping level were fabricated and investigated by using anodic oxidation method. The morphology of the porous structures was explained by space charge layer width, which was affected by the free carrier-dopants concentration....

  15. Josephson coupling in junctions made of monolayer graphene on SiC

    OpenAIRE

    Jouault, B.; Charpentier, S.; Massarotti, D.; Michon, A.; Paillet, M.; Huntzinger, J. -R.; Tiberj, A.; Zahab, A.; Bauch, T.; Lucignano, P.; Tagliacozzo, A.; Lombardi, F.; Tafuri, F.

    2016-01-01

    Graphene on silicon carbide (SiC) has proved to be highly successful in Hall conductance quantization for its homogeneity at the centimetre scale. Robust Josephson coupling has been measured in co-planar diffusive Al/monololayer graphene/Al junctions. Graphene on SiC substrates is a concrete candidate to provide scalability of hybrid Josephson graphene/superconductor devices, giving also promise of ballistic propagation.

  16. Manufacturing: SiC Power Electronics for Variable Frequency Motor Drives

    Energy Technology Data Exchange (ETDEWEB)

    Horowitz, Kelsey A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Bench Reese, Samantha R [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Remo, Timothy W [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

    2017-08-15

    This brochure, published as an annual research highlight of the Clean Energy Manufacturing Analysis Center (CEMAC), summarizes CEMAC analysis of silicon carbide (SiC) power electronics for variable frequency motor drives. The key finding presented is that variations in manufacturing expertise, yields, and access to existing facilities impact regional costs and manufacturing location decisions for SiC ingots, wafers, chips, and power modules more than do core country-specific factors such as labor and electricity costs.

  17. The development of chemically vapor deposited mullite coatings for the corrosion protection of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Auger, M.; Hou, P.; Sengupta, A.; Basu, S.; Sarin, V. [Boston Univ., MA (United States)

    1998-05-01

    Crystalline mullite coatings have been chemically vapor deposited onto SiC substrates to enhance the corrosion and oxidation resistance of the substrate. Current research has been divided into three distinct areas: (1) Development of the deposition processing conditions for increased control over coating`s growth rate, microstructure, and morphology; (2) Analysis of the coating`s crystal structure and stability; (3) The corrosion resistance of the CVD mullite coating on SiC.

  18. Investigation on the Short Circuit Safe Operation Area of SiC MOSFET Power Modules

    DEFF Research Database (Denmark)

    Reigosa, Paula Diaz; Luo, Haoze; Iannuzzo, Francesco

    2016-01-01

    This paper gives a better insight of the short circuit capability of state-of-the-art SiC MOSFET power modules rated at 1.2 kV by highlighting the physical limits under different operating conditions. Two different failure mechanisms have been identified, both reducing the short-circuit capability......) of the studied SiC MOSFET power modules is formulated based on the two proposed criteria....

  19. Surface modification of silicon nanowire field-effect devices with Si-C and Si-N bonded Monolayers

    NARCIS (Netherlands)

    Masood, M.N.

    2011-01-01

    The research work was mainly focused on the surface modification/surface functionalization of active-gate areas of silicon nanowire field-effect transistor devices (Si-NW FET) using hydrogen terminated surfaces, Si-C and Si-N bonded monolayers and subsequent bioimmobilization for biosensor

  20. SiC Conversion Coating Prepared from Silica-Graphite Reaction

    Directory of Open Access Journals (Sweden)

    Back-Sub Sung

    2017-01-01

    Full Text Available The β-SiC conversion coatings were successfully synthesized by the SiO(v-graphite(s reaction between silica powder and graphite specimen. This paper is to describe the effects on the characteristics of the SiC conversion coatings, fabricated according to two different reaction conditions. FE-SEM, FE-TEM microstructural morphologies, XRD patterns, pore size distribution, and oxidation behavior of the SiC-coated graphite were investigated. In the XRD pattern and SAD pattern, the coating layers showed cubic SiC peak as well as hexagonal SiC peak. The SiC coatings showed somewhat different characteristics with the reaction conditions according to the position arrangement of the graphite samples. The SiC coating on graphite, prepared in reaction zone (2, shows higher intensity of beta-SiC main peak (111 in XRD pattern as well as rather lower porosity and smaller main pore size peak under 1 μm.

  1. A review of SiC reactive ion etching in fluorinated plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Yih, P.H. [Bell Labs., Orlando, FL (United States). Lucent Technologies; Saxena, V.; Steckl, A.J. [Cincinnati Univ., OH (United States). Dept. of Electrical and Computer Engineering

    1997-07-01

    Research and development in semiconducting silicon carbide (SiC) technology has produced significant progress in the past five years in many areas: material (bulk and thin film) growth, device fabrication, and applications. A major factor in this rapid growth has been the development of SiC bulk crystals and the availability of crystalline substrates. Current leading applications for SiC devices include high power and high temperature devices and light emitting diodes. Due to the strong bonding between Si and C (Si-C = 1.34 x Si-Si), wet chemical etching can only be performed at high temperature. Therefore, plasma-based (``dry``) etching plays the crucial role of patterning SiC for the fabrication of various electronic devices. In the past several years, reactive ion etching (RIE) of SiC polytypes (3C and 6H) has been investigated in fluorinated gases (primarily CHF{sub 3}, CBrF{sub 3}, CF{sub 4}, SF{sub 6}, and NF{sub 3}), usually mixed with oxygen and occasionally with other additives or in a mixture of fluorinated gases. In this paper, a review of SiC RIE is presented. The primary emphasis is on etching of the 3C and 6H polytypes, but some results on RIE of the 4H polytype are included. The paper covers the basic etching mechanisms, provides typical etching properties in selected plasma conditions, discusses the effects of changes in various etching parameters, such as plasma pressure, density and power, etching time, etc. The etching of features of sizes varying from sub-{mu}m to tens of {mu}m`s is addressed. Finally, optimum etching conditions and trade-offs are considered for various device configurations. (orig.) 122 refs.

  2. A Review of SiC Reactive Ion Etching in Fluorinated Plasmas

    Science.gov (United States)

    Yih, P. H.; Saxena, V.; Steckl, A. J.

    1997-07-01

    Research and development in semiconducting silicon carbide (SiC) technology has produced significant progress in the past five years in many areas: material (bulk and thin film) growth, device fabrication, and applications. A major factor in this rapid growth has been the development of SiC bulk crystals and the availability of crystalline substrates. Current leading applications for SiC devices include high power and high temperature devices and light emitting diodes. Due to the strong bonding between Si and C (Si-C = 1.34×Si-Si), wet chemical etching can only be performed at high temperature. Therefore, plasma-based (dry) etching plays the crucial role of patterning SiC for the fabrication of various electronic devices. In the past several years, reactive ion etching (RIE) of SiC polytypes (3C and 6H) has been investigated in fluorinated gases (primarily CHF3, CBrF3, CF4, SF6, and NF3), usually mixed with oxygen and occasionally with other additives or in a mixture of fluorinated gases. In this paper, a review of SiC RIE is presented. The primary emphasis is on etching of the 3C and 6H polytypes, but some results on RIE of the 4H polytype are included. The paper covers the basic etching mechanisms, provides typical etching properties in selected plasma conditions, discusses the effects of changes in various etching parameters, such as plasma pressure, density and power, etching time, etc. The etching of features of sizes varying from sub-m to tens of μm's is addressed. Finally, optimum etching conditions and trade-offs are considered for various device configurations.

  3. White light emission from fluorescent SiC with porous surface

    DEFF Research Database (Denmark)

    Lu, Weifang; Ou, Yiyu; Fiordaliso, Elisabetta Maria

    2017-01-01

    We report for the frst time a NUV light to white light conversion in a N-B co-doped 6H-SiC (fuorescent SiC) layer containing a hybrid structure. The surface of fuorescent SiC sample contains porous structures fabricated by anodic oxidation method. After passivation by 20nm thick Al2O3, the photol......We report for the frst time a NUV light to white light conversion in a N-B co-doped 6H-SiC (fuorescent SiC) layer containing a hybrid structure. The surface of fuorescent SiC sample contains porous structures fabricated by anodic oxidation method. After passivation by 20nm thick Al2O3......, the photoluminescence intensity from the porous layer was signifcant enhanced by a factor of more than 12. Using a porous layer of moderate thickness (~10µm), high-quality white light emission was realized by combining the independent emissions of blue-green emission from the porous layer and yellow emission from...... the bulk fuorescent SiC layer. A high color rendering index of 81.1 has been achieved. Photoluminescence spectra in porous layers fabricated in both commercial n-type and lab grown N-B co-doped 6H-SiC show two emission peaks centered approximately at 460nm and 530nm. Such bluegreen emission phenomenon can...

  4. Elaboration of silicon carbides nano particles (SiC): from the powder synthesis to the sintered ceramic; Elaboration de ceramiques nanostructurees en carbure de silicium (SiC): de la synthese de poudre a la ceramique frittee

    Energy Technology Data Exchange (ETDEWEB)

    Reau, A. [CEA Saclay, Dept. des Materiaux pour le Nucleaire (DEN/DANS/DMN/SRMA), 91 - Gif-sur-Yvette (France)

    2008-07-01

    Materials for the reactor cores of the fourth generation will need materials supporting high temperatures with fast neutrons flux. SiC{sub f}/SiC ceramics are proposed. One of the possible elaboration process is to fill SiC fiber piece with nano particles SiC powder and to strengthen by sintering. The aim of this thesis is to obtain a nano structured SiC ceramic as a reference for the SiC{sub f}/SiC composite development and to study the influence of the fabrication parameters. (A.L.B.)

  5. Wear Behaviour of Al-6061/SiC Metal Matrix Composites

    Science.gov (United States)

    Mishra, Ashok Kumar; Srivastava, Rajesh Kumar

    2017-04-01

    Aluminium Al-6061 base composites, reinforced with SiC particles having mesh size of 150 and 600, which is fabricated by stir casting method and their wear resistance and coefficient of friction has been investigated in the present study as a function of applied load and weight fraction of SiC varying from 5, 10, 15, 20, 25, 30, 35 and 40 %. The dry sliding wear properties of composites were investigated by using Pin-on-disk testing machine at sliding velocity of 2 m/s and sliding distance of 2000 m over a various loads of 10, 20 and 30 N. The result shows that the reinforcement of the metal matrix with SiC particulates up to weight percentage of 35 % reduces the wear rate. The result also show that the wear of the test specimens increases with the increasing load and sliding distance. The coefficient of friction slightly decreases with increasing weight percentage of reinforcements. The wear surfaces are examined by optical microscopy which shows that the large grooved regions and cavities with ceramic particles are found on the worn surface of the composite alloy. This indicates an abrasive wear mechanism, which is essentially a result of hard ceramic particles exposed on the worn surfaces. Further, it was found from the experimentation that the wear rate decreases linearly with increasing weight fraction of SiC and average coefficient of friction decreases linearly with increasing applied load, weight fraction of SiC and mesh size of SiC. The best result has been obtained at 35 % weight fraction and 600 mesh size of SiC.

  6. The benefits and current progress of SiC SGTOs for pulsed power applications

    Science.gov (United States)

    Ogunniyi, Aderinto; O'Brien, Heather; Lelis, Aivars; Scozzie, Charles; Shaheen, William; Agarwal, Anant; Zhang, Jon; Callanan, Robert; Temple, Victor

    2010-10-01

    Silicon Carbide (SiC) is an extremely attractive material for semiconductor power devices because of its electrical and physical characteristics. This paper describes the benefits of utilizing SiC Super Gate Turn-Off thyristors (SGTO) in pulsed power applications, reviews the current progress and development of SiC GTOs, and presents the static and pulsed characteristics of large area GTOs with high blocking capabilities. The wide pulsed evaluation of the 0.5 cm 2 SiC SGTOs has been demonstrated and reported by the Army Research Laboratory (ARL). This paper presents the wide pulsed capabilities of the 1 cm 2 SiC SGTOs. The 1 cm 2 SiC SGTO devices handled up to twice the peak current of the 0.5 cm 2 SiC SGTOs at a 1 ms pulse width. The wide pulsed evaluation of these devices was demonstrated at ARL. ARL evaluated the static and pulsed characteristics of six of these devices. The devices had a forward blocking voltage rating of 9 kV and a trigger requirement of a negative pulse of 1 A to the gate for a millisecond pulse width. These devices were pulsed as high as 3.5 kA at 1 ms, equating to an action rate of 6 × 10 3 A 2 s and a current density of 4.8 kA/cm 2, based on the device active area. The narrow pulsed evaluation of this device has been demonstrated by Cree Inc. A peak current of 12.8 kA with a pulse width of 17 μs (corresponding to 12.8 kA/cm 2 based on the chip size) was conducted with this device.

  7. SiC JFET Transistor Circuit Model for Extreme Temperature Range

    Science.gov (United States)

    Neudeck, Philip G.

    2008-01-01

    A technique for simulating extreme-temperature operation of integrated circuits that incorporate silicon carbide (SiC) junction field-effect transistors (JFETs) has been developed. The technique involves modification of NGSPICE, which is an open-source version of the popular Simulation Program with Integrated Circuit Emphasis (SPICE) general-purpose analog-integrated-circuit-simulating software. NGSPICE in its unmodified form is used for simulating and designing circuits made from silicon-based transistors that operate at or near room temperature. Two rapid modifications of NGSPICE source code enable SiC JFETs to be simulated to 500 C using the well-known Level 1 model for silicon metal oxide semiconductor field-effect transistors (MOSFETs). First, the default value of the MOSFET surface potential must be changed. In the unmodified source code, this parameter has a value of 0.6, which corresponds to slightly more than half the bandgap of silicon. In NGSPICE modified to simulate SiC JFETs, this parameter is changed to a value of 1.6, corresponding to slightly more than half the bandgap of SiC. The second modification consists of changing the temperature dependence of MOSFET transconductance and saturation parameters. The unmodified NGSPICE source code implements a T(sup -1.5) temperature dependence for these parameters. In order to mimic the temperature behavior of experimental SiC JFETs, a T(sup -1.3) temperature dependence must be implemented in the NGSPICE source code. Following these two simple modifications, the Level 1 MOSFET model of the NGSPICE circuit simulation program reasonably approximates the measured high-temperature behavior of experimental SiC JFETs properly operated with zero or reverse bias applied to the gate terminal. Modification of additional silicon parameters in the NGSPICE source code was not necessary to model experimental SiC JFET current-voltage performance across the entire temperature range from 25 to 500 C.

  8. Operation and Modulation of H7 Current Source Inverter with Hybrid SiC and Si Semiconductor Switches

    DEFF Research Database (Denmark)

    Wang, Weiqi; Gao, Feng; Yang, Yongheng

    2018-01-01

    This paper proposes an H7 current source inverter (CSI) consisting of a single parallel-connected silicon carbide (SiC) switch and a traditional silicon (Si) H6 CSI. The proposed H7 CSI takes the advantages of the SiC switch to maintain high efficiency, while significantly increasing the switching...... frequency. In order to reduce the switching times and also realize the zero current switching (ZCS) ability for the rear-end CSI, two modulation schemes are proposed for the H7 CSI with either superior output performance or minimal switching counts. Consequently, the proposed H7 CSI can be considered...

  9. Corrosion resistant coatings for SiC and Si{sub 3}N{sub 4} ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen Thierry; Shaokai Yang; J.J. Brown

    1998-09-01

    It is the goal of this program to (1) develop coatings for SiC and Si{sub 3}N{sub 4} that will enhance their performance as heat exchangers under coal combustion conditions and (2) to conduct an in-depth evaluation of the cause and severity of ceramic heat exchanger deterioration and failure under coal combustion conditions.

  10. Growth of thin SiC films on Si single crystal wafers with a microwave excited plasma of methane gas

    DEFF Research Database (Denmark)

    Dhiman, Rajnish; Morgen, Per

    2013-01-01

    Wehave studied the growth and properties of SiC films on Siwafers, under ultrahigh vacuumbackground con- ditions, using a remote-, microwave excited,methane plasma as a source of active carbon and hydrogen,while the Si substrates were held at a temperature of near 700 °C. The reaction is diffusio...

  11. Development of Gate and Base Drive Using SiC Junction Field Effect Transistors

    Science.gov (United States)

    2008-05-01

    junction transistor ( BJT ). The circuit rapidly drove a SiC BJT on and off with 4H-SiC semiconductor devices to perform to 150 °C. For the gate of an n...Figures iv List of Tables iv SiC Power Transistors : Focus on JFETs 1 JFET Background 1 JFETs Used, and Circuit Using Normally-Off JFET to Drive BJT On...induction transistors . JFET Background JFET and MOS have unipolar conduction without conductivity modulation by injected minority carriers as for BJT

  12. Quasi-Freestanding multilayer graphene films on the carbon face of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Siegel, D. A.; Hwang, C. G.; Fedorov, A. V.; Lanzara, A.

    2010-06-30

    The electronic band structure of as-grown and doped graphene grown on the carbon face of SiC is studied by high-resolution angle-resolved photoemission spectroscopy, where we observe both rotations between adjacent layers and AB-stacking. The band structure of quasi-freestanding AB-bilayers is directly compared with bilayer graphene grown on the Si-face of SiC to study the impact of the substrate on the electronic properties of epitaxial graphene. Our results show that the C-face films are nearly freestanding from an electronic point of view, due to the rotations between graphene layers.

  13. High efficiency battery converter with SiC devices for residential PV systems

    DEFF Research Database (Denmark)

    Pham, Cam; Teodorescu, Remus; Kerekes, Tamas

    2013-01-01

    The demand for high efficiency and higher power density is a challenge for Si-based semiconductors due to the physical characteristics of material. These can be overcome by employing wide-band-gap materials like SiC. This paper compares a second generator SiC MOSFETs against a normally-on Trench ...... JFETs and theirs performances in a high efficiency battery converter for residential photovoltaic systems. The prototypes are 3 kW converters with more than 98% efficiency and high simplicity and power density....

  14. CVD solutions for new directions in SiC and GaN epitaxy

    OpenAIRE

    Li, Xun

    2015-01-01

    This thesis aims to develop a chemical vapor deposition (CVD) process for the new directions in both silicon carbon (SiC) and gallium nitride (GaN) epitaxial growth. The properties of the grown epitaxial layers are investigated in detail in order to have a deep understanding. SiC is a promising wide band gap semiconductor material which could be utilized for fabricating high-power and high-frequency devices. 3C-SiC is the only polytype with a cubic structure and has superior physical properti...

  15. Characteristics of hot-pressed fiber-reinforced ceramics with SiC matrix

    Science.gov (United States)

    Miyoshi, Tadahiko; Kodama, Hironori; Sakamoto, Hiroshi; Goto, Akihiro; Iijima, Shiroo

    1989-11-01

    Silicon carbide ceramics’ matrix composites with SiC or C filaments were fabricated through hot pressing, and the effects of the filament pullout on their fracture toughness were experimentally investigated. The C-rich coating layers on the SiC filaments were found to have a significant effect on the frictional stress at the filament/matrix interfaces, through assising the filamet pullout from the matrix. Although the coating layers were apt to burn out in the sintering process of SiC matrix compposites, a small addition of carbon to the raw materials was found to be effective for the retention of the layers on the fibers, thus increasing the fracture toughness of the composites. The fracture toughness of the C filament/SiC matrix composite increased with temperature due to the larger interfacial frictional stress at higher temperatures, because of the higher thermal expansion of the filament in the radial direction than that of the matrix.

  16. Femtosecond pulse shaping for phase and morphology control in PLD: Synthesis of cubic SiC

    Science.gov (United States)

    Ristoscu, C.; Socol, G.; Ghica, C.; Mihailescu, I. N.; Gray, D.; Klini, A.; Manousaki, A.; Anglos, D.; Fotakis, C.

    2006-04-01

    Pulse shaping introduces the method that makes possible the production of tunable arbitrary shaped pulses. We extend this method to control the prevalent growth of cubic SiC films on Si (1 0 0) substrates by pulsed laser deposition at temperatures around 973 K from a SiC target in vacuum. We used a laser system generating 200 fs pulses duration at 800 nm with 600 μJ at 1 kHz. The obtained structures are investigated by electron microscopy, X-ray diffraction and profilometry. We observed grains embedded in an amorphous texture, characteristic in our opinion to the depositions obtained with very short pulses. We present a comparison of deposited films with and without pulse shaping. Pulse shaping promotes increased crystallization and results in the deposition of thin structures of cubic SiC with a strongly reduced density of particulates, under similar deposition conditions.

  17. Origin of the high p-doping in F intercalated graphene on SiC

    KAUST Repository

    Cheng, Yingchun

    2011-08-04

    The atomic and electronic structures of F intercalated epitaxialgraphene on a SiC(0001) substrate are studied by first-principles calculations. A three-step fluorination process is proposed. First, F atoms are intercalated between the graphene and the SiC, which restores the Dirac point in the band structure. Second, saturation of the topmost Si dangling bonds introduces p-doping up to 0.37 eV. Third, F atoms bond covalently to the graphene to enhance the p-doping. Our model explains the highly p-doped state of graphene on SiC after fluorination [A. L. Walter et al., Appl. Phys. Lett. 98, 184102 (2011)].

  18. Biomimetic synthesis of cellular SiC based ceramics from plant ...

    Indian Academy of Sciences (India)

    Unknown

    Abstract. A novel biomimetic approach in designing and fabricating engineering ceramic materials has gained much interest in recent times. Following this approach, synthesis has been made of dense Si–SiC duplex ceramic composites and highly porous SiC ceramics in the image of the morphological features inherent in ...

  19. Photoluminescence topography of fluorescent SiC and its corresponding source crystals

    DEFF Research Database (Denmark)

    Wilhelm, M.; Kaiser, M.; Jokubavicus, V.

    2013-01-01

    The preparation and application of co-doped polycrystalline SiC as source in sublimation growth of fluorescent layers is a complex topic. Photoluminescence topographies of luminescent 6H-SiC layers and their corresponding source crystals have been studied in order to investigate the dependence of...

  20. Fabrication of broadband antireflective sub-wavelength structures on fluorescent SiC

    DEFF Research Database (Denmark)

    Ou, Yiyu; Jokubavicus, V.; Kaiser, M.

    2013-01-01

    Surface nanocones on 6H-SiC have been developed and demonstrated as an effective method of enhancing the light extraction efficiency from fluorescent SiC layers. The surface reflectance, measured from the opposite direction of light emission, over a broad bandwidth range is significantly suppress...

  1. Fabrication of SiC Reinforced Zr0{sub 2} Composites via Polymeric Precursor Route

    Energy Technology Data Exchange (ETDEWEB)

    Mistarihi, Qusai M.; Hong, Soon Hyung; Ryu, Ho Jin [KAIST, Daejeon (Korea, Republic of)

    2015-10-15

    This indicates that as a result of the decomposition of the SMP-730 at temperatures less than or equal to 1500 .deg. C, amorphous SiC was formed. This study suggests that a higher compaction pressure followed by an intermediate decomposition temperature of the polymeric precursor and a higher sintering temperature are needed in order to fabricate interconnected SiC-ZrO{sub 2} composites. A. Ortona et al. fabricated ZrB2-SiC composites with SiC phase surrounding the grains of ZrB2 matrix through a polymeric precursor route by using Si and phenol. S. Li et al. measured the thermal conductivity of Al composites reinforced with a continuous phase SiC and SiC particles and found that the difference in the thermal conductivity measured at room temperature was about 70.2 W/m.K. To the best of authors' knowledge, no study has been performed about the fabrication of the connected SiC microstructure to improve the thermophysical properties of oxides. Zirconium dioxide (ZrO{sub 2}) is one of the potential candidates for use as a matrix for inert matrix fuels (IMF) due to its low neutron absorption cross section, chemical stability, and the compatibility with water. Irradiation and chemical stability testes performed on yttria stabilized zirconia (YSZ) and calcium stabilized zirconia (CSZ) have shown that they have a good irradiation and chemical stability. Despite the good irradiation and chemical stability, its low thermal conductivity is considered the main disadvantage of YSZ. Core loading with the YSZ IMF pellets experienced about a 100 K higher center line temperature than the limit specified for UO{sub 2}.

  2. Surface characteristics and corrosion behaviour of WE43 magnesium alloy coated by SiC film

    Energy Technology Data Exchange (ETDEWEB)

    Li, M. [Center for Biomedical Materials and Tissue Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871 (China); Cheng, Y., E-mail: chengyan@pku.edu.cn [Center for Biomedical Materials and Tissue Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871 (China); Zheng, Y.F. [Center for Biomedical Materials and Tissue Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871 (China); Department of Advanced Materials and Nanotechnology, College of Engineering, Peking University, Beijing 100871 (China); Zhang, X.; Xi, T.F. [Center for Biomedical Materials and Tissue Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871 (China); Wei, S.C. [Center for Biomedical Materials and Tissue Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871 (China); Department of Oral and Maxillofacial Surgery, School and Hospital of Stomatology, Peking University, Beijing 100871 (China)

    2012-01-15

    Amorphous SiC film has been successfully fabricated on the surface of WE43 magnesium alloy by plasma enhanced chemical vapour deposition (PECVD) technique. The microstructure and elemental composition were analyzed by transmission electron microscopy (TEM), glancing angle X-ray diffraction (GAXRD) and X-ray photoelectron spectroscopy (XPS), respectively. The immersion test indicated that SiC film could efficiently slow down the degradation rate of WE43 alloy in simulated body fluid (SBF) at 37 {+-} 1 Degree-Sign C. The indirect toxicity experiment was conducted using L929 cell line and the results showed that the extraction medium of SiC coated WE43 alloys exhibited no inhibitory effect on L929 cell growth. The in vitro hemocompatibility of the samples was investigated by hemolysis test and blood platelets adhesion test, and it was found that the hemolysis rate of the coated WE43 alloy decreased greatly, and the platelets attached on the SiC film were slightly activated with a round shape. It could be concluded that SiC film prepared by PECVD made WE43 alloy more appropriate to biomedical application.

  3. Thermal conductivity analysis of SiC ceramics and fully ceramic microencapsulated fuel composites

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hyeon-Geun, E-mail: hglee@kaeri.re.kr [Korea Atomic Energy Research Institute, 989-111 Daedeok-daero, Yuseong-gu, Daejeon (Korea, Republic of); Kim, Daejong [Korea Atomic Energy Research Institute, 989-111 Daedeok-daero, Yuseong-gu, Daejeon (Korea, Republic of); Lee, Seung Jae [KEPCO Nuclear Fuel, 242, Daedeok-daero, Yuseong-gu, Daejeon (Korea, Republic of); Park, Ji Yeon; Kim, Weon-Ju [Korea Atomic Energy Research Institute, 989-111 Daedeok-daero, Yuseong-gu, Daejeon (Korea, Republic of)

    2017-01-15

    Highlights: • Thermal conductivity of SiC ceramics and FCM pellets was measured and discussed. • Thermal conductivity of FCM pellets was analyzed by the Maxwell-Eucken equation. • Effective thermal conductivity of TRISO particles applied in this study was assumed. - Abstract: The thermal conductivity of SiC ceramics and FCM fuel composites, consisting of a SiC matrix and TRISO coated particles, was measured and analyzed. SiC ceramics and FCM pellets were fabricated by hot press sintering with Al{sub 2}O{sub 3} and Y{sub 2}O{sub 3} sintering additives. Several factors that influence thermal conductivity, specifically the content of sintering additives for SiC ceramics and the volume fraction of TRISO particles and the matrix thermal conductivity of FCM pellets, were investigated. The thermal conductivity values of samples were analyzed on the basis of their microstructure and the arrangement of TRISO particles. The thermal conductivity of the FCM pellets was compared to that predicted by the Maxwell-Eucken equation and the thermal conductivity of TRISO coated particles was calculated. The thermal conductivity of FCM pellets in various sintering conditions was in close agreement to that predicted by the Maxwell-Eucken equation with the fitted thermal conductivity value of TRISO particles.

  4. Highly flexible and robust N-doped SiC nanoneedle field emitters

    KAUST Repository

    Chen, Shanliang

    2015-01-23

    Flexible field emission (FE) emitters, whose unique advantages are lightweight and conformable, promise to enable a wide range of technologies, such as roll-up flexible FE displays, e-papers and flexible light-emitting diodes. In this work, we demonstrate for the first time highly flexible SiC field emitters with low turn-on fields and excellent emission stabilities. n-Type SiC nanoneedles with ultra-sharp tips and tailored N-doping levels were synthesized via a catalyst-assisted pyrolysis process on carbon fabrics by controlling the gas mixture and cooling rate. The turn-on field, threshold field and current emission fluctuation of SiC nanoneedle emitters with an N-doping level of 7.58 at.% are 1.11 V μm-1, 1.55 V μm-1 and 8.1%, respectively, suggesting the best overall performance for such flexible field emitters. Furthermore, characterization of the FE properties under repeated bending cycles and different bending states reveal that the SiC field emitters are mechanically and electrically robust with unprecedentedly high flexibility and stabilities. These findings underscore the importance of concurrent morphology and composition controls in nanomaterial synthesis and establish SiC nanoneedles as the most promising candidate for flexible FE applications. © 2015 Nature Publishing Group All rights reserved.

  5. Ag Transport Through Non-Irradiated and Irradiated SiC

    Energy Technology Data Exchange (ETDEWEB)

    Szlufarska, Izabela [Univ. of Wisconsin, Madison, WI (United States); Morgan, Dane [Univ. of Wisconsin, Madison, WI (United States); Blanchard, James [Univ. of Wisconsin, Madison, WI (United States)

    2016-01-11

    Silicon carbide is the main barrier to diffusion of fission products in the current design of TRistuctural ISOtropic (TRISO) coated fuel particles, and Ag is one of the few fission products that have been shown to escape through this barrier. Because the SiC coating in TRISO is exposed to radiation throughout the lifetime of the fuel, understanding of how radiation changes the transport of the fission products is essential for the safety of the reactor. The goals of this project are: (i) to determine whether observed variation in integral release measurements of Ag through SiC can be explained by differences in grain size and grain boundary (GB) types among the samples; (2) to identify the effects of irradiation on diffusion of Ag through SiC; (3) to discover phenomena responsible for significant solubility of Ag in polycrystalline SiC. To address these goals, we combined experimental analysis of SiC diffusion couples with modeling studies of diffusion mechanisms through bulk and GBs of this material. Comparison between results obtained for pristine and irradiated samples brings in insights into the effects of radiation on Ag transport.

  6. Role of Defects in Swelling and Creep of Irradiated SiC

    Energy Technology Data Exchange (ETDEWEB)

    Szlufarska, Izabela [Univ. of Wisconsin, Madison, WI (United States); Voyles, Paul [Univ. of Wisconsin, Madison, WI (United States); Sridharan, Kumar [Univ. of Wisconsin, Madison, WI (United States); Katoh, Yutai [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2016-01-16

    Silicon carbide is a promising cladding material because of its high strength and relatively good corrosion resistance. However, SiC is brittle and therefore SiC-based components need to be carefully designed to avoid cracking and failure by fracture. In design of SiC-based composites for nuclear reactor applications it is essential to take into account how mechanical properties are affected by radiation and temperature, or in other words, what strains and stresses develop in this material due to environmental conditions. While thermal strains in SiC can be predicted using classical theories, radiation-induced strains are much less understood. In particular, it is critical to correctly account for radiation swelling and radiation creep, which contribute significantly to dimensional instability of SiC under radiation. Swelling typically increases logarithmically with radiation dose and saturates at relatively low doses (damage levels of a few dpa). Consequently, swelling-induced stresses are likely to develop within a few months of operation of a reactor. Radiation-induced volume swelling in SiC can be as high as 2%, which is significantly higher than the cracking strain of 0.1% in SiC. Swelling-induced strains will lead to enormous stresses and fracture, unless these stresses can be relaxed via some other mechanism. An effective way to achieve stress relaxation is via radiation creep. Although it has been hypothesized that both radiation swelling and radiation creep are driven by formation of defect clusters, existing models for swelling and creep in SiC are limited by the lack of understanding of specific defects that form due to radiation in the range of temperatures relevant to fuel cladding in light water reactors (LWRs) (<1000°C). For example, defects that can be detected with traditional transmission electron microscopy (TEM) techniques account only for 10-45% of the swelling measured in irradiated SiC. Here, we have undertaken an integrated experimental and

  7. Pendeo-epitaxial Growth and Characterization of III-Nitride Thin Films on SiC(0001) and Si(111) Substrates

    Science.gov (United States)

    Davis, Robert

    2002-03-01

    Conventional heteroepitaxial growth of GaN on low temperature GaN or AlN buffer layers previously deposited on Al2O3 and SiC substrates results in films containing a high dislocation density (1E8-1E10 cm-2) due to the lattice mismatches between the buffer layer and the film and/or the buffer layer and the substrate. The objective of this research has been the significant reduction in dislocation density in GaN thin films via special methods of metallorganic vapor phase growth. Lateral epitaxial overgrowth (LEO) of GaN stripes patterned in an SiO2 mask deposited on GaN film/AlN buffer layer/6H-SiC(0001) substrates was the initial method. The mask contained 3mm and 5mm wide stripe openings, spaced parallel at 3-40 mm, and oriented along and in the GaN film. The deposited material grew vertically to the top of the mask and then both laterally over the mask and vertically until coalescence. Threading dislocations, originating from the GaN/AlN buffer layer interface, propagated to the top surface of the regrown GaN layer within the window regions of the mask. By contrast, there were no observable threading dislocations in the overgrown portions of the layer. The few dislocations observed formed parallel to (0001) plane via the extension of the vertical threading dislocations after a 90^o bend in the regrown region. They did not subsequently propagate to the surface of the overgrown GaN layers. Recently we have pioneered a new process for selective epitaxy of GaN and AlGaN layers with a low-defect density, namely, pendeo (from the Latin: to hang or be suspended from)-epitaxy (PE). It incorporates mechanisms of growth exploited by conventional lateral overgrowth processes by using masks to prevent vertical propagation of threading defects, and extends the phenomenon to employ the substrate itself as a pseudo-mask. The growth does not initiate through open windows, rather it begins on sidewalls of forms etched into a seed layer and continues until coalescence over and

  8. Effect of silicon source and carbon source on the morphology of SiC powders

    Science.gov (United States)

    Wang, Zhao; Wang, Shu-lin; Ji, Jia-you; Xu, Man

    2017-11-01

    Silicon carbide (SiC) powders were prepared by carbothermal reduction method with silica fume and carbon-white as the silicon source; glucose, phenolic resin, polyvinyl pyrrolidone (PVP) as carbon source. The effects of reaction temperature, silicon source and carbon source on the morphology of silicon carbide powder were investigated. The result shows that: The optimum temperature for preparation of silicon carbide powder was 1400 °C When the glucose was used as carbon source, the morphology of SiC powder was greatly affected by the kinds of silicon sources; When the phenolic resin and PVP were used as carbon source, the morphology of SiC powder was greatly influenced by the carbon source.

  9. Pseudo Dirac dispersion in Mn-intercalated graphene on SiC

    KAUST Repository

    Kahaly, M. Upadhyay

    2013-07-01

    The atomic and electronic structures of bulk C6Mn, bulk C 8Mn, and Mn-intercalated graphene on SiC(0 0 0 1) and SiC(0001̄) are investigated by density functional theory. We find for both configurations of Mn-intercalated graphene a nonmagnetic state, in agreement with the experimental situation for SiC(0 0 0 1), and explain this property. The electronic structures around the Fermi energy are dominated by Dirac-like cones at energies consistent with data from angular resolved photoelectron spectroscopy [Gao et al., ACS Nano. 6 (2012) 6562]. However, our results demonstrate that the corresponding states trace back to hybridized Mn d orbitals, and not to the graphene. © 2013 Elsevier B.V. All rights reserved.

  10. Friction stir spot welding of 2024-T3 aluminum alloy with SiC nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Paidar, Moslem; Sarab, Mahsa Laali [Islamic Azad University, Tehran (Iran, Islamic Republic of)

    2016-01-15

    In this study, the Friction stir spot welding (FSSW) of 2024-T3 aluminum alloy with 1.6 mm thickness was investigated. The effects of the silicon carbide (SiC) nanoparticles on the metallurgical and mechanical properties were discussed. The effects of particles on tension shear and wear tests were also investigated. The process was conducted at a constant rotational speed of 1000 rpm. Results showed that adding SiC nanoparticles to the weld during FSSW had a major effect on the mechanical properties. In fact, the addition of nanoparticles as barriers prevented grain growth in the Stir zone (SZ). The data obtained in the tensile-shear and wear tests showed that tensile-shear load and wear resistance increased with the addition of SiC nanoparticles, which was attributed to the fine grain size produced in the SZ.

  11. Al4SiC4 wurtzite crystal: Structural, optoelectronic, elastic, and piezoelectric properties

    Directory of Open Access Journals (Sweden)

    L. Pedesseau

    2015-12-01

    Full Text Available New experimental results supported by theoretical analyses are proposed for aluminum silicon carbide (Al4SiC4. A state of the art implementation of the density functional theory is used to analyze the experimental crystal structure, the Born charges, the elastic properties, and the piezoelectric properties. The Born charge tensor is correlated to the local bonding environment for each atom. The electronic band structure is computed including self-consistent many-body corrections. Al4SiC4 material properties are compared to other wide band gap wurtzite materials. From a comparison between an ellipsometry study of the optical properties and theoretical results, we conclude that the Al4SiC4 material has indirect and direct band gap energies of about 2.5 eV and 3.2 eV, respectively.

  12. Fluorescent SiC with pseudo-periodic moth-eye structures

    DEFF Research Database (Denmark)

    Ou, Yiyu; Aijaz, Imran; Ou, Haiyan

    2012-01-01

    White light-emitting diodes (LEDs) consisting of a nitride-based blue LED chip and phosphor are very promising candidates for the general lighting applications as energy-saving sources. Recently, donor-acceptor doped fluorescent SiC has been proven as a highly efficient wavelength converter...... material much superior to the phosphors in terms of high color rendering index value and long lifetime. The light extraction efficiency of the fluorescent SiC based all semiconductor LED light sources is usually low due to the large refractive index difference between the semiconductor and air. In order......-eye structure as an effective and simple method to enhance the extraction efficiency of fluorescent SiC based white LEDs.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only....

  13. Deposition of thin ultrafiltration membranes on commercial SiC microfiltration tubes

    DEFF Research Database (Denmark)

    Facciotti, Marco; Boffa, Vittorio; Magnacca, Giuliana

    2014-01-01

    . After 5 times coating, a 5.6 µm thick γ-Al2O3 layer was obtained. This membrane shows retention of ~75% for polyethylene glycol molecules with Mn of 8 and 35 kDa, indicating that, despite their intrinsic surface roughness, commercial SiC microfiltration tubes can be applied as carrier for thin......Porous SiC based materials present high mechanical, chemical and thermal robustness, and thus have been largely applied to water-filtration technologies. In this study, commercial SiC microfiltration tubes with nominal pore size of 0.04 m were used as carrier for depositing thin aluminium oxide...... (Al2O3) ultrafiltration membranes. These ultrafiltration membranes were obtained by coating, drying and calcination of a colloidal suspension of boehmite particles. After calcination, the membrane material consisted of nano-sized Υ-Al2O3 crystallites and had a narrow pore size distribution...

  14. Cl-intercalated graphene on SiC: Influence of van der Waals forces

    KAUST Repository

    Cheng, Yingchun

    2013-01-01

    The atomic and electronic structures of Cl-intercalated epitaxial graphene on SiC are studied by first-principles calculations. By increasing the Cl concentration, doping levels from n-type to slightly p-type are achieved on the SiC(0001) surface, while a wider range of doping levels is possible on the SiC(0001̄) surface. We find that the Cl atoms prefer bonding to the substrate rather than to the graphene. By varying the Cl concentration the doping level can be tailored. Consideration of van der Waals forces improves the distance between the graphene and the substrate as well as the binding energy, but it is not essential for the formation energy. For understanding the doping mechanism the introduction of non-local van der Waals contributions to the exchange correlation functional is shown to be essential. Copyright © EPLA, 2013.

  15. Joining technology—A challenge for the use of SiC components in HTRs

    Energy Technology Data Exchange (ETDEWEB)

    Herrmann, M., E-mail: marion.herrmann@tu-dresden.de; Meisel, P.; Lippmann, W.; Hurtado, A.

    2016-09-15

    The availability of suitable joining technologies is paramount to the further advancement of ceramic components and their use in HTRs. Among other joining technologies, a modified brazing technology using a laser beam for heating the components to be joined has been developed at TU Dresden. The laser-induced heating behavior of the ceramic material is determined by the interactions between the material and the laser beam. This was shown in two different silicon carbide materials (SSiC and SiC{sub f}-reinforced ceramic material) using a diode laser with wavelengths 808 nm and 940 nm. The laser-based technique was illustrated by three different examples: sealing of monolithic SiC with a pin configuration for fuel claddings, sealing of SiC heat pipes with a length of 1 m, and demonstration of the transferability of the laser technique to fiber-reinforced components by means of a SiC{sub f}/SiCN material. Because the covalent bonding of SiC does not allow conventional welding, much research has been devoted to developing alternative filler systems. Glass or glass–ceramic fillers enable the tailoring of properties such as CTE and viscosity. Glasses are thermally stable up to their glass transition temperatures. It was shown that the crystallization of the yttrium aluminosilicate glass composition of the present work allows it to be used at 1050 °C without any significant changes occurring in braze tightness. For the SiC heat pipes with sodium as the working fluid, a sodium-resistant metal braze consisting of Ni–Ti–Si was formed. The long-term resistance of this filler to sodium at 800 °C was proven. The results demonstrate the possibility of using the laser-based joining technique for the joining of different SiC materials as well as for different brazing materials.

  16. Relaxations of fluorouracil tautomers by decorations of fullerene-like SiCs: DFT studies

    Energy Technology Data Exchange (ETDEWEB)

    Kouchaki, Alireza [Department of Pharmaceutical Chemistry, Faculty of Pharmaceutical Chemistry, Pharmaceutical Sciences Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Gülseren, Oğuz [Department of Physics, Faculty of Science, Bilkent University, Ankara (Turkey); Hadipour, Nasser [Department of Chemistry, Faculty of Science, Tarbiat Modares University, Tehran (Iran, Islamic Republic of); Mirzaei, Mahmoud, E-mail: mdmirzaei@pharm.mui.ac.ir [Bioinformatics Research Center, School of Pharmacy and Pharmaceutical Sciences, Isfahan University of Medical Sciences, Isfahan (Iran, Islamic Republic of)

    2016-06-03

    Decorations of silicon carbide (SiC) fullerene-like nanoparticles by fluorouracil (FU) and its tautomers are investigated through density functional theory (DFT) calculations. Two models of fullerene-like particles including Si{sub 12}C{sub 8} and Si{sub 8}C{sub 12} are constructed to be counterparts of decorated hybrid structures, FU@Si{sub 12}C{sub 8} and FU@Si{sub 8}C{sub 12}, respectively. The initial models including original FU and tautomeric structures and SiC nanoparticles are individually optimized and then combined for further optimizations in the hybrid forms. Covalent bonds are observed for FU@Si{sub 12}C{sub 8} hybrids, whereas non-covalent interactions are seen for FU@Si{sub 8}C{sub 12} ones. The obtained properties indicated that Si{sub 12}C{sub 8} model could be considered as a better counterpart for interactions with FU structures than Si{sub 8}C{sub 12} model. The results also showed significant effects of interactions on the properties of atoms close to the interacting regions in nanoparticles. Finally, the tautomeric structures show different behaviors in interactions with SiC nanoparticles, in which the SiC nanoparticles could be employed to detect the situations of tautomeric processes for FU structures. - Highlights: • Possibilities of interaction between fluorouracil and silicon carbides have been recognized. • Possibilities for covalent and non-covalent interactions have been indicated. • Detections of tautomeric structures have been investigated.

  17. Spallation recoil II: Xenon evidence for young SiC grains

    Science.gov (United States)

    Ott, U.; Altmaier, M.; Herpers, U.; Kuhnhenn, J.; Merchel, S.; Michel, R.; Mohapatra, R. K.

    2005-11-01

    We have determined the recoil range of spallation xenon produced by irradiation of Ba glass targets with ˜1190 and ˜268 MeV protons, using a catcher technique, where spallation products are measured in target and catcher foils. The inferred range for 126Xe produced in silicon carbide is ˜0.19 μm, which implies retention of ˜70% for 126Xe produced in "typical" presolar silicon carbide grains of 1 μm size. Recoil loss of spallation xenon poses a significantly smaller problem than loss of the spallation neon from SiC grains. Ranges differ for the various Xe isotopes and scale approximately linearly as function of the mass difference between the target element, Ba, and the product. As a consequence, SiC grains of various sizes will have differences in spallation Xe composition. In an additional experiment at ˜66 MeV, where the recoil ranges of 22Na and 127Xe produced on Ba glass were determined using γ-spectrometry, we found no evidence for recoil ranges being systematically different at this lower energy. We have used the new data to put constraints on the possible presolar age of the SiC grains analyzed for Xe by Lewis et al. (1994). Uncertainties in the composition of the approximately normal Xe component in SiC (Xe-N) constitute the most serious problem in determining an age, surpassing remaining uncertainties in Xe retention and production rate. A possible interpretation is that spallation contributions are negligible and that trapped 124Xe/126Xe is ˜5% lower in Xe-N than in Q-Xe. But also for other reasonable assumptions for the 124Xe/126Xe ratio in Xe-N (e.g., as in Q-Xe), inferred exposure ages are considerably shorter than theoretically expected lifetimes for interstellar grains. A short presolar age is in line with observations by others (appearance, grain size distribution) that indicate little processing in the interstellar medium (ISM) of surviving (crystalline) SiC. This may be due to amorphization of SiC in the ISM on a much shorter time scale

  18. System for the growth of bulk SiC crystals by modified CVD techniques

    Science.gov (United States)

    Steckl, Andrew J.

    1994-01-01

    The goal of this program was the development of a SiC CVD growth of films thick enough to be useful as pseudo-substrates. The cold-walled CVD system was designed, assembled, and tested. Extrapolating from preliminary evaluation of SiC films grown in the system at relatively low temperatures indicates that the growth rate at the final temperatures will be high enough to make our approach practical. Modifications of the system to allow high temperature growth and cleaner growth conditions are in progress. This program was jointly funded by Wright Laboratory, Materials Directorate and NASA LeRC and monitored by NASA.

  19. Structural and thermal characterization of polyvinylalcohol grafted SiC nanocrystals

    DEFF Research Database (Denmark)

    Saini, Isha; Sharma, Annu; Dhiman, Rajnish

    2017-01-01

    In the present work, Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, x-ray diffraction (XRD), transmission electron microscopy (TEM) and scanning electron microscopy (SEM) were employed to ascertain the grafting of an organic layer of polyvinyl alcohol (PVA) onto the surface...... introduced in the characteristic TO and LO mode of vibration of SiC nanocrystals after grafting procedure.XRD analysis confirmed that the grafting procedure did not alter the crystalline geometry of SiC nanocrystals. TEM and SEM images further support the FTIR and Raman spectroscopic results and confirm...

  20. A Novel DBC Layout for Current Imbalance Mitigation in SiC MOSFET Multichip Power Modules

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig; Beczkowski, Szymon

    2016-01-01

    This paper proposes a novel Direct Bonded Copper (DBC) layout for mitigating the current imbalance among the paralleled SiC MOSFET dies in multichip power modules. Compared to the traditional layout, the proposed DBC layout significantly reduces the circuit mismatch and current coupling effect......, which consequently improves the current sharing among the paralleled SiC MOSFET dies in power module. Mathematic analysis and circuit model of the DBC layout are presented to elaborate on the superior features of the proposed DBC layout. Simulation and experimental results further verify the theoretical...

  1. A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis

    DEFF Research Database (Denmark)

    Ceccarelli, L.; Reigosa, P. D.; Iannuzzo, F.

    2017-01-01

    The aim of this paper is to provide an extensive overview about the state-of-art commercially available SiC power MOSFET, focusing on their short-circuit ruggedness. A detailed literature investigation has been carried out, in order to collect and understand the latest research contribution within...... this topic and create a survey of the present scenario of SiC MOSFETs reliability evaluation and failure mode analysis, pointing out the evolution and improvements as well as the future challenges in this promising device technology....

  2. A Novel DBC Layout for Current Imbalance Mitigation in SiC MOSFET Multichip Power Modules

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig; Beczkowski, Szymon

    2016-01-01

    This letter proposes a novel direct bonded copper (DBC) layout for mitigating the current imbalance among the paralleled SiC MOSFET dies in multichip power modules. Compared to the traditional layout, the proposed DBC layout significantly reduces the circuit mismatch and current coupling effect......, which consequently improves the current sharing among the paralleled SiC MOSFET dies in power module. Mathematic analysis and circuit model of the DBC layout are presented to elaborate the superior features of the proposed DBC layout. Simulation and experimental results further verify the theoretical...

  3. High yield polycarbosilane precursors to stoichiometric SiC. Synthesis, pyrolysis and application

    Energy Technology Data Exchange (ETDEWEB)

    Interrante, L.V.; Wu, H.J. [Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Chemistry; Whitmarsh, C.W.; Sherwood, W. [Starfire Systems, Inc., Glenville, NY (United States); Lewis, R.; Maciel, G. [Colorado State Univ., Fort Collins, CO (United States). Dept. of Chemistry

    1994-12-31

    The synthesis and properties of two polycarbosilanes that have essentially a ``SiH{sub 2}CH{sub 2}`` composition is described. One of these polymers is a highly branched hydridopolycarbosilane (HPCS) derived from Grignard coupling of Cl{sub 3}SiCH{sub 2}Cl followed by LiAlH{sub 4} reduction. This synthesis is amenable to large scale production and the authors are exploring applications of HPCS as a source of SiC coatings and its allyl-derivative, AHPCS, as a matrix source for SiC and C-fiber reinforced composites. These polymers thermoset on heating at 200--400 C (or at 100 C with a catalyst) and give near stoichiometric SiC with low O content in ca. 80% yield on pyrolysis to 1,000 C. The second method involves ring-opening polymerization of 1,1,3,3-tetrachlorodisilacyclobutane and yields a high molecular weight, linear polymer that can be reduced to [SiH{sub 2}CH{sub 2}]{sub n} (PSE), the monosilicon analog of polyethylene. In contrast to high density polyethylene which melts at 135 C, PSE is a liquid at room temperature which crystallizes at ca. 5 C. On pyrolysis to 1,000 C, PSE gives stoichiometric, nanocrystalline, SiC in virtually quantitative yield. The polymer-to-ceramic conversion was examined for PSE by using TGA, mass spec., solid state NMR, and IR methods yielding information regarding the cross-linking and structural evolution processes. The results of these studies of the polymer-to-ceramic conversion process and their efforts to employ the AHPCS polymer as a source of SiC matrices are described.

  4. Mechanism of Enhancement in Electromagnetic Properties of MgB2 by Nano SiC Doping

    NARCIS (Netherlands)

    Dou, S.X.; Shcherbakova, O.; Yeoh, W.K.; Kim, J.H.; Soltanian, S.; Wang, X.L.; Senatore, C.; Flukiger, R.; Dhalle, Marc M.J.; Husnjak, O.; Babic, E.

    2007-01-01

    A comparative study of pure, SiC, and C doped MgB2 wires has revealed that the SiC doping allowed C substitution and MgB2 formation to take place simultaneously at low temperatures. C substitution enhances Hc2, while the defects, small grain size, and nanoinclusions induced by C incorporation and

  5. Charge transport along luminescent oxide layers containing Si and SiC nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Jambois, O. [EME, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain)]. E-mail: ojambois@el.ub.es; Vila, A. [EME, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Pellegrino, P. [EME, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Carreras, J. [EME, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Perez-Rodriguez, A. [EME, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Garrido, B. [EME, Departament d' Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Bonafos, C. [Nanomaterials Group, CEMES-CNRS, 29 rue J. Marvig 31055, Toulouse (France); BenAssayag, G. [Nanomaterials Group, CEMES-CNRS, 29 rue J. Marvig 31055, Toulouse (France)

    2006-12-15

    The electrical conductivity of silicon oxides containing silicon and silicon-carbon nanoparticles has been investigated. By use of sequential Si{sup +} and C{sup +} ion implantations in silicon oxide followed by an annealing at 1100 deg. C, luminescent Si nanocrystals and SiC nanoparticles were precipitated. The characterization of the electrical transport has been carried out on two kinds of structures, allowing parallel or perpendicular transport, with respect to the substrate. The first type of samples were elaborated by means of a focus-ion-beam technique: electrical contacts to embedded nanoparticles were made by milling two nanotrenches on the sample surface until reaching the buried layer, then filling them with tungsten. The distance between the electrodes is about 100 nm. The second type of samples correspond to 40 nm thick typical MOS capacitors. The electron transport along the buried layer has shown a dramatic lowering of the electrical current, up to five orders of magnitude, when applying a sequence of voltages. It has been related to a progressive charge retention inside the nanoparticles, which, on its turn, suppresses the electrical conduction along the layer. On the other hand, the MOS capacitors show a reversible carrier charge and discharge effect that limits the current at low voltage, mostly due to the presence of C in the layers. A typical Fowler-Nordheim injection takes place at higher applied voltages, with a threshold voltage equal to 23 V.

  6. Mechanism of quantum dot luminescence excitation within implanted SiO2:Si:C films.

    Science.gov (United States)

    Zatsepin, A F; Buntov, E A; Kortov, V S; Tetelbaum, D I; Mikhaylov, A N; Belov, A I

    2012-02-01

    Results of the investigation of photoluminescence (PL) mechanisms for silicon dioxide films implanted with ions of silicon (100 keV; 7 × 10(16) cm(-2)) and carbon (50 keV; 7 × 10(15)-1.5 × 10(17) cm(-2)) are presented. The spectral, kinetic and thermal activation properties of the quantum dots (Si, C and SiC) formed by a subsequent annealing were studied by means of time-resolved luminescence spectroscopy under selective synchrotron radiation excitation. Independent quantum dot PL excitation channels involving energy transfer from the SiO(2) matrix point defects and excitons were discovered. A resonant mechanism of the energy transfer from the matrix point defects (E' and ODC) is shown to provide the fastest PL decay of nanosecond order. The critical distances (6-9 nm) of energy transport between the bulk defects and nanoclusters were determined in terms of the Inokuti-Hirayama model. An exchange interaction mechanism is realized between the surface defects (E(s)'-centres) and the luminescent nanoparticles. The peculiarities of an anomalous PL temperature dependence are explained in terms of a nonradiative energy transfer from the matrix excitons. It is established that resonant transfer to the luminescence centre triplet state is realized in the case of self-trapped excitons. In contrast, the PL excitation via free excitons includes the stages of energy transfer to the singlet state, thermally activated singlet-triplet conversion and radiative recombination.

  7. Band gap modulation of Si-C binary core/shell nanowires by composition and ratio.

    Science.gov (United States)

    Dong, Huilong; Guo, Zhenyu; Gilmore, Keith; Du, Chunmiao; Hou, Tingjun; Lee, Shuit-Tong; Li, Youyong

    2015-07-10

    Core/shell nanowires (CSNWs) composed of Si, C, and SiC are promising systems for optoelectronic devices. Through computational investigations, we find that the band gaps (Eg) of these nanowires can be controlled not only by changing their composition, but also by adjusting the core/shell thickness ratio. For Si/SiC or SiC/C CSNWs with a fixed total number of layers, the dependence of Eg on the core/shell thickness ratio shows a bowing effect. Eg can be tuned from a few eV all the way to zero. These investigations provide direction for designing optoelectronic devices based on Earth-abundant elements.

  8. AES and LEED study of the zinc blende SiC(100) surface

    Science.gov (United States)

    Dayan, M.

    1985-01-01

    Auger and LEED measurements have been carried out on the (100) surface of zinc blende SiC. Two different phases of the clean surface, in addition to two kinds of oxygen-covered surfaces, have been obtained, identified, and discussed. In the oxygen-covered surface, the oxygen is bonded to the Si. The carbon-rich phase is reconstructed (2 x 1), similar to the (100) clean surfaces of Si, Ge, and diamond. The Si-topped surface is reconstructed. A model of alternating Si dimers is suggested for this surface.

  9. Síntesis de whiskers de SiC asistida por microondas

    Directory of Open Access Journals (Sweden)

    Garza-Méndez, F. J.

    2013-06-01

    Full Text Available We developed a new process for the synthesis of SiC whiskers assisted by microwaves; this is based on the mixture of silica xerogels and graphite powder. As energy source were used microwaves of 2.45 GHz and 1.0 kW of power RMS. On the other hand, mesoporous silica was synthesized via sol-gel, the precursors used were TEOS/H2O and ethanol. Throughanalysis of the BET is determined the value of averageporesize (3.0 nm and the surface area (1090 m2/g.By mean of X-Ray diffraction it was demonstrated that the silica obtained is an amorphous solid and, the powders obtained in the microwave synthesis are β-SiC. Synthesized SiC powders were observed using a SEM in secondary electron mode, it was observed that this powders consists of SiC whiskers. The effect of microwaves on the synthesis of whiskers of SiC is discussed in the present work.Se desarrolló un nuevo proceso para la síntesis de whiskers de SiC asistida por microondas, basada en la mezcla de xerogeles de sílice y grafito en polvo. Como fuente de energía se emplearon microondas de 2.45 GHz y 1.5 kW de potencia. La sílice mesoporosa se sintetizó vía sol-gel, los precursores usados para esta síntesis fueron TEOS/H2O y etanol. A través del análisis BET se determinó el valor de tamaño de poro promedio (3.0 nm y el área superficial (1090 m2/g. Mediante difracción de rayos-x método de polvos se demostró que la sílice sintetizada es amorfa y que los polvos obtenidos en el microondas corresponden a β-SiC. Para determinar la morfología de los whiskers de SiC se analizó por MEB en el modo de electrones secundarios. El efecto de las microondas en la síntesis de whiskers de SiC se discute en el presente trabajo.

  10. Removal of C and SiC from Si and FeSi during ladle refining and solidification

    Energy Technology Data Exchange (ETDEWEB)

    Klevan, Ole Svein

    1997-12-31

    The utilization of solar energy by means of solar cells requires the Si to be very pure. The purity of Si is important for other applications as well. This thesis mainly studies the total removal of carbon from silicon and ferrosilicon. The decarburization includes removal of SiC particles by stirring and during casting in addition to reduction of dissolved carbon by gas purging. It was found that for three commercial qualities of FeSi75, Refined, Gransil, and Standard lumpy, the refined quality is lowest in carbon, followed by Gransil and Standard. A decarburization model was developed that shows the carbon removal by oxidation of dissolved carbon to be a slow process at atmospheric pressure. Gas stirring experiments have shown that silicon carbide particles are removed by transfer to the ladle wall. The casting method of ferrosilicon has a strong influence on the final total carbon content in the commercial alloy. Shipped refined FeSi contains about 100 ppm total carbon, while the molten alloy contains roughly 200 ppm. The total carbon out of the FeSi-furnace is about 1000 ppm. It is suggested that low values of carbon could be obtained on an industrial scale by injection of silica combined with the use of vacuum. Also, the casting system could be designed to give low carbon in part of the product. 122 refs., 50 figs., 24 tabs.

  11. Testing of porous SiC with dense coating under relevant conditions for Flow Channel Insert application

    Energy Technology Data Exchange (ETDEWEB)

    Ordás, N., E-mail: nordas@ceit.es [CEIT and Tecnun (University of Navarra), Manuel de Lardizábal 15, 20018 San Sebastián (Spain); Bereciartu, A.; García-Rosales, C. [CEIT and Tecnun (University of Navarra), Manuel de Lardizábal 15, 20018 San Sebastián (Spain); Moroño, A.; Malo, M.; Hodgson, E.R. [CIEMAT, Avenida Complutense 22, 28040 Madrid (Spain); Abellà, J.; Colominas, S. [Institut Químic de Sarrià, University Ramon Llull, Via Augusta 390, 08017 Barcelona (Spain); Sedano, L. [CIEMAT, Avenida Complutense 22, 28040 Madrid (Spain)

    2014-10-15

    Highlights: • Porous SiC coated by CVD with a dense coating was developed for Flow Channel Inserts (FCI) in dual-coolant blanket concept. • Porous SiC was obtained following the sacrificial template technique, using Al{sub 2}O{sub 3} and Y{sub 2}O{sub 3} as sintering additives. • Flexural strength, thermal and electrical conductivity, and microstructure of uncoated and coated porous SiC are presented. • Adhesion of coating to porous SiC and its corrosion behavior under Pb-17.5Li at 700 °C are shown. - Abstract: Thermally and electrically insulating porous SiC ceramics are attractive candidates for Flow Channel Inserts (FCI) in dual-coolant blanket concepts thanks to its relatively inexpensive manufacturing route. To prevent tritium permeation and corrosion by Pb-15.7 a dense coating has to be applied on the porous SiC. Despite not having structural function, FCI must exhibit sufficient mechanical strength to withstand strong thermal gradients and thermo-electrical stresses during operation. This work summarizes the results on the development of coated porous SiC for FCI. Porous SiC was obtained following the sacrificial template technique, using Al{sub 2}O{sub 3} and Y{sub 2}O{sub 3} as sintering additives and a carbonaceous phase as pore former. Sintering was performed in inert gas at 1850–1950 °C during 15 min to 3 h, followed by oxidation at 650 °C to eliminate the carbonaceous phase. The most promising bulk materials were coated with a ∼30 μm thick dense SiC by CVD. Results on porosity, bending tests, thermal and electrical conductivity are presented. The microstructure of the coating, its adhesion to the porous SiC and its corrosion behavior under Pb-17.5Li are also shown.

  12. Abrupt GaP/Si hetero-interface using bistepped Si buffer

    Energy Technology Data Exchange (ETDEWEB)

    Ping Wang, Y., E-mail: yanping.wang@insa-rennes.fr; Kuyyalil, J.; Nguyen Thanh, T.; Almosni, S.; Bernard, R.; Tremblay, R.; Da Silva, M.; Létoublon, A.; Rohel, T.; Tavernier, K.; Le Corre, A.; Cornet, C.; Durand, O. [UMR FOTON, CNRS, INSA Rennes, Rennes F-35708 (France); Stodolna, J.; Ponchet, A. [CEMES-CNRS, Université de Toulouse, 29 rue Jeanne Marvig, BP 94347, 31055 Toulouse Cedex 04 (France); Bahri, M.; Largeau, L.; Patriarche, G. [Laboratoire de Photonique et Nanostructures, CNRS UPR 20, Route de Nozay, Marcoussis 91460 (France); Magen, C. [LMA, INA-ARAID, and Departamento de Física de la Materia Condensada, Universidad de Zaragoza, 50018 Zaragoza (Spain)

    2015-11-09

    We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth.

  13. Efficiency and Cost Comparison of Si IGBT and SiC JFET Isolated DC/DC Converters

    DEFF Research Database (Denmark)

    Nielsen, Rasmus Ørndrup; Török, Lajos; Munk-Nielsen, Stig

    2013-01-01

    Silicon carbide (SiC) and other wide band gap devices are in these years undergoing a rapid development. The need for higher efficiency and smaller dimensions are forcing engineers to take these new devices in to considerations when choosing semiconductors for their converters. In this article a ...

  14. Operation and Modulation of H7 Current Source Inverter with Hybrid SiC and Si Semiconductor Switches

    DEFF Research Database (Denmark)

    Wang, Weiqi; Gao, Feng; Yang, Yongheng

    2017-01-01

    This paper proposes an H7 current source inverter (CSI) consisting of a single parallel-connected silicon carbide (SiC) switch and a traditional silicon (Si) H6 CSI. The proposed H7 CSI takes the advantages of the SiC switch to maintain high efficiency, while significantly increasing the switching...... frequency. In order to reduce the switching times and also realize the zero current switching (ZCS) ability for the rear-end CSI, two modulation schemes are proposed for the H7 CSI with either superior output performance or minimal switching counts. Consequently, the proposed H7 CSI can be considered...... as an all-SiC-switch converter in terms of high performance and high efficiency with reduced DC inductance. It provides a cost-effective solution to addressing the efficiency issue of conventional CSI systems. Simulations and experiments are performed to validate the effectiveness of the proposed H7 CSI...

  15. Investigations of Ar ion irradiation effects on nanocrystalline SiC thin films

    Energy Technology Data Exchange (ETDEWEB)

    Craciun, V., E-mail: valentin.craciun@inflpr.ro [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Bucharest-Magurele (Romania); Craciun, D.; Socol, G. [Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Bucharest-Magurele (Romania); Behdad, S.; Boesl, B. [Department of Mechanical and Materials Engineering, Florida International University, Miami, FL 33174 (United States); Himcinschi, C. [Institute of Theoretical Physics, TU Bergakademie Freiberg, Freiberg (Germany); Makino, H. [Research Institute, Kochi University of Technology, Kami, Kochi 782-8502 (Japan); Socol, M. [National Institute for Materials Physics, Bucharest-Magurele (Romania); Simeone, D. [CEA/DEN/DANS/DM2S/SRMA/LA2M-LRC CARMEN CEN, Saclay (France); CNRS/SPMS UMR8785 LRC CARMEN, Ecole Centrale de Paris, 92292 Chatenay Malabry (France)

    2016-06-30

    Highlights: • Thin polycrystalline SiC films grown by the pulsed laser deposition technique were irradiated by 800 keV Ar ions at a dose of 2.6 × 10{sup 14} at/cm{sup 2}. • The SiC films hardness and Young modulus values significantly decreased after irradiation. • Glancing X-ray diffraction investigations showed a partial transformation of the SiC hexagonal phase into the cubic phase. • Smooth PLD grown thin films are excellent for radiation effects investigations using XRR, GIXRD and nanoindentation techniques. - Abstract: The effects of 800 keV Ar ion irradiation on thin nanocrystalline SiC films grown on (100) Si substrates using the pulsed laser deposition (PLD) technique were investigated. On such PLD grown films, which were very dense, flat and smooth, X-ray reflectivity, glancing incidence X-ray diffraction and nanoindentation investigations were easily performed to evaluate changes induced by irradiation on the density, surface roughness, crystalline structure, and mechanical properties. Results indicated that the SiC films retained their crystalline nature, the cubic phase partially transforming into the hexagonal phase, which had a slightly higher lattice parameter then the as-deposited films. Simulations of X-ray reflectivity curves indicated a 3% decrease of the films density after irradiation. Nanoindentation results showed a significant decrease of the hardness and Young's modulus values with respect to those measured on as-deposited films. Raman and X-ray photoelectron spectroscopy investigations found an increase of the C−C bonds and a corresponding decrease of the Si−C bonds in the irradiated area, which could explain the degradation of mechanical properties.

  16. Corrosion resistance of amorphous hydrogenated SiC and diamond-like coatings deposited by r. f. -plasma-enhanced chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sella, C. (Lab. de Physique des Materiaux, CNRS, 92 Meudon (France)); Lecoeur, J. (Lab. d' Electrochimie Interfaciale, CNRS, 92 Meudon (France)); Sampeur, Y. (ICMC, 91 Le Coudray Montceaux (France)); Catania, P. (ICMC, 91 Le Coudray Montceaux (France))

    1993-10-08

    This paper reports on the properties and corrosion resistance of amorphous hydrogenated carbon and amorphous hydrogenated SiC films deposited by r.f.-plasma-enhanced chemical vapour deposition at low temperatures (below 200 C). SiC coatings were prepared from SiH[sub 4]-CH[sub 4] gas mixtures. Hydrogenated diamond-like coatings were deposited from classical CH[sub 4]-H[sub 2] mixtures. The influence of various deposition parameters was investigated. Microstructural and mechanical properties of the films were studied (density, hydrogen content, nanohardness, internal stress, critical load and friction coefficient). Two examples of corrosion resistance are given: (1) the corrosion resistance and biocompatibility of SiC and diamond-like coatings deposited on metal implants (Ti alloy) (the corrosion resistance is evaluated through potentiodynamic polarization tests in biological media; the biocompatibility of coated and uncoated metals is compared using differentiated human cell cultures); and (2) the corrosion resistance of SiC-coated magnesium in chloride-containing boric borate buffer at pH = 9.3 evaluated from anodic polarization curves and scanning electron microscopy studies. (orig.)

  17. Fluorescent SiC for white light-emitting diodes

    DEFF Research Database (Denmark)

    Ou, Haiyan; Ou, Yiyu; Kamiyama, S.

    2012-01-01

    The strong photoluminescence from f-SiC was achieved after the optimization of the B and N concentrations. Surface nanostructures were successfully applied to enhance the extraction efficiency. f-SiC is a promising wavelength convertor for white LEDs.......The strong photoluminescence from f-SiC was achieved after the optimization of the B and N concentrations. Surface nanostructures were successfully applied to enhance the extraction efficiency. f-SiC is a promising wavelength convertor for white LEDs....

  18. Synergistically toughening effect of SiC whiskers and nanoparticles in Al2O3-based composite ceramic cutting tool material

    Science.gov (United States)

    Liu, Xuefei; Liu, Hanlian; Huang, Chuanzhen; Wang, Limei; Zou, Bin; Zhao, Bin

    2016-09-01

    In recent decades, many additives with different characteristics have been applied to strengthen and toughen Al2O3-based ceramic cutting tool materials. Among them, SiC whiskers and SiC nanoparticles showed excellent performance in improving the material properties. While no attempts have been made to add SiC whiskers and SiC nanoparticles together into the ceramic matrix and the synergistically toughening effects of them have not been studied. An Al2O3-SiCw-SiCnp advanced ceramic cutting tool material is fabricated by adding both one-dimensional SiC whiskers and zero-dimensional SiC nanoparticles into the Al2O3 matrix with an effective dispersing and mixing process. The composites with 25 vol% SiC whiskers and 25 vol% SiC nanoparticles alone are also investegated for comparison purposes. Results show that the Al2O3-SiCw-SiCnp composite with both 20 vol% SiC whiskers and 5 vol% SiC nanoparticles additives have much improved mechanical properties. The flexural strength of Al2O3-SiCw-SiCnp is 730±95 MPa and fracture toughness is 5.6±0.6 MPa·m1/2. The toughening and strengthening mechanisms of SiC whiskers and nanoparticles are studied when they are added either individually or in combination. It is indicated that when SiC whiskers and nanoparticles are added together, the grains are further refined and homogenized, so that the microstructure and fracture mode ratio is modified. The SiC nanoparticles are found helpful to enhance the toughening effects of the SiC whiskers. The proposed research helps to enrich the types of ceramic cutting tool and is benefit to expand the application range of ceramic cutting tool.

  19. Tracing the incorporation of water in SiO{sub 2}/SiC structures formed by oxide deposition and thermal oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Corrêa, S.A., E-mail: silma.alberton@ufrgs.br [PGMICRO, UFRGS, 91509-900 Porto Alegre, RS (Brazil); Pitthan, E. [PGMICRO, UFRGS, 91509-900 Porto Alegre, RS (Brazil); Soares, G.V. [PGMICRO, UFRGS, 91509-900 Porto Alegre, RS (Brazil); Instituto de Física, UFRGS, 91509-900 Porto Alegre, RS (Brazil); Stedile, F.C. [PGMICRO, UFRGS, 91509-900 Porto Alegre, RS (Brazil); Instituto de Química, UFRGS, 91509-900 Porto Alegre, RS (Brazil)

    2014-08-01

    Water vapor incorporation in SiO{sub 2} films, obtained by thermal oxidation and/or sputter deposition, on SiC and Si was investigated. Isotopically enriched water was used to allow the {sup 2}H (deuterium) quantification and the {sup 18}O profiling by nuclear reaction analyses. The incorporation of hydrogen from water vapor in SiO{sub 2}/SiC and SiO{sub 2}/Si structures, whose films were deposited by sputtering, occurred mainly in the SiO{sub 2} film/substrate interfacial region. Exposure to water vapor led to isotopic exchange between oxygen from the water vapor and oxygen from SiO{sub 2} films deposited on SiC and on Si substrates. Longer thermal oxidation times of the SiC prior to the deposition of the SiO{sub 2} film led to larger amounts of D incorporated. The thermal growth of a very thin SiO{sub 2} film followed by the deposition of SiO{sub 2} led to the lowest amounts of D incorporated. These results were correlated with the improvement in the electrical characteristics observed for SiO{sub 2}/SiC structures obtained by these routes.

  20. SiC MODIFICATIONS TO MELCOR FOR SEVERE ACCIDENT ANALYSIS APPLICATIONS

    Energy Technology Data Exchange (ETDEWEB)

    Brad J. Merrill; Shannon M Bragg-Sitton

    2013-09-01

    The Department of Energy (DOE) Office of Nuclear Energy (NE) Light Water Reactor (LWR) Sustainability Program encompasses strategic research focused on improving reactor core economics and safety margins through the development of an advanced fuel cladding system. The Fuels Pathway within this program focuses on fuel system components outside of the fuel pellet, allowing for alteration of the existing zirconium-based clad system through coatings, addition of ceramic sleeves, or complete replacement (e.g. fully ceramic cladding). The DOE-NE Fuel Cycle Research & Development (FCRD) Advanced Fuels Campaign (AFC) is also conducting research on materials for advanced, accident tolerant fuels and cladding for application in operating LWRs. To aide in this assessment, a silicon carbide (SiC) version of the MELCOR code was developed by substituting SiC in place of Zircaloy in MELCOR’s reactor core oxidation and material property routines. The purpose of this development effort is to provide a numerical capability for estimating the safety advantages of replacing Zr-alloy components in LWRs with SiC components. This modified version of the MELCOR code was applied to the Three Mile Island (TMI-2) plant accident. While the results are considered preliminary, SiC cladding showed a dramatic safety advantage over Zircaloy cladding during this accident.

  1. Localized Surface Plasmon on 6H SiC with Ag Nanoparticles

    DEFF Research Database (Denmark)

    Wei, Yi; Fadil, Ahmed; Ou, Haiyan

    2017-01-01

    ) of the emissions of the donor-acceptor pairs of the SiC substrate. Roomtemperature measurements of photoluminescence (PL), transmittance and time-resolved photoluminescence (TRPL) were applied to characterize the LSP resonances. Through the finitedifference time-domain (FDTD) simulation of the LSP resonance...

  2. Residual stress measurements in an SiC continuous fiber reinforced Ti matrix composite

    NARCIS (Netherlands)

    Willemse, P.F.; Mulder, F.M.; Wei, W.; Rekveldt, M.Th.; Knight, K.S.

    2000-01-01

    During the fabrication of ceramic fiber reinforced metal matrix composites mismatch stresses will be introduced due to differences in thermal expansion coefficients between the matrix and the fibers. Calculations, based on a coaxial cylinder model, [1 and 2] predict that, for a Ti matrix SiC

  3. A Comparison of SiC Power Switches for High-Rel Defense Applications (preprint)

    Science.gov (United States)

    2007-07-01

    junction transistor ( BJT ). The VJFET is principally valued for having demonstrated the highest current and voltage combinations, positive...for defense applications. They are the vertical junction field effect transistor (VJFET), the metal-oxide-semiconductor FET (MOSFET), and the bipolar...most technologically ready SiC power switch, the vertical junction field effect transistor (VJFET), has been demonstrated in preproduction devices at

  4. Temperature dependence of a microstructured SiC coherent thermal source

    Science.gov (United States)

    Hervé, Armande; Drévillon, Jérémie; Ezzahri, Younès; Joulain, Karl; De Sousa Meneses, Domingos; Hugonin, Jean-Paul

    2016-09-01

    By ruling a grating on a polar material that supports surface phonon-polaritons such as silicon carbide (SiC), it is possible to create directional and monochromatic thermal sources. So far, most of the studies have considered only materials with room temperature properties as the ones tabulated in Palik's handbooks. Recently, measurements have provided experimental data of the SiC dielectric function at different temperatures. Here we study, numerically, the effect of the temperature dependence of the dielectric function on the thermal emission of SiC gratings (1D grating, in a first approach), heated at different temperatures. When materials are heated, the position of the grating emissivity peak shifts towards higher wavelength values. A second consequence of the temperature dependence of optical properties is that room temperature designed gratings are not optimal for higher temperatures. However, by modifying the grating parameters, it is possible to find an emission peak, with a maximum of emissivity near 1, for each temperature. We tried first to catch some patterns in the emissivity variation. Then, we obtained a grating, which leads to an optimum emissivity for all available temperature data for SiC.

  5. Nanocrystalline Grapheme Layer Induced on Surface of SiC Thin Film by Electron Beam Irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Hanbyul; Jeon, Youngeun; Jung, Sungchul; Kwak, Jinsung; Kim, Sung Youb; Kwon, Soonyong [Ulsan National Institute of Science and Technology, Ulsan (Korea, Republic of); Ko, Jaehyeon [Hallym Univ., Chuncheon (Korea, Republic of); Lee, Byung Cheol; Kang, Hyun Suk [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2013-07-01

    It is observed that a graphene layer forms on the surface of a thin film of SiC by irradiating electron beam (e-beam) directly on the sample surface in high vacuum ({approx}10{sup -6} Torr) environment. A SiC thin film was deposited on a sapphire substrate by RF magnetron sputtering at the substrate temperature of {approx}200 .deg. C. The e-beam irradiation on the sample surface was performed at an acceleration voltage of 8 kV. The graphene layer formation was revealed by the characteristic peaks (D, G, 2D) in the measured Raman spectra. Based on the relatively large D peak in the Raman spectra, the formed graphene layer is thought to be nanocrystalline. The quality of e-beam induced graphene layer was found to be improved noticeably by a Ni film over-coating on the SiC thin film before electron beam irradiation, which is confirmed by the significant changes of measured Raman spectra compared with the spectra without Ni over-coating. The Ni film is believed to enhance the carbon adatom motion, leading to the formation of graphene layer with larger grain size. Our experimental results propose a plausible method for directly writing graphene patterns on SiC thin film just by irradiating e-beam on the sample surface without using conventional pattering processes.

  6. Conformal Thin Film Packaging for SiC Sensor Circuits in Harsh Environments

    Science.gov (United States)

    Scardelletti, Maximilian C.; Karnick, David A.; Ponchak, George E.; Zorman, Christian A.

    2011-01-01

    In this investigation sputtered silicon carbide annealed at 300 C for one hour is used as a conformal thin film package. A RF magnetron sputterer was used to deposit 500 nm silicon carbide films on gold metal structures on alumina wafers. To determine the reliability and resistance to immersion in harsh environments, samples were submerged in gold etchant for 24 hours, in BOE for 24 hours, and in an O2 plasma etch for one hour. The adhesion strength of the thin film was measured by a pull test before and after the chemical immersion, which indicated that the film has an adhesion strength better than 10(exp 8) N/m2; this is similar to the adhesion of the gold layer to the alumina wafer. MIM capacitors are used to determine the dielectric constant, which is dependent on the SiC anneal temperature. Finally, to demonstrate that the SiC, conformal, thin film may be used to package RF circuits and sensors, an LC resonator circuit was fabricated and tested with and without the conformal SiC thin film packaging. The results indicate that the SiC coating adds no appreciable degradation to the circuits RF performance. Index Terms Sputter, silicon carbide, MIM capacitors, LC resonators, gold etchants, BOE, O2 plasma

  7. Silicon Carbide (SiC) Power Processing Unit (PPU) for Hall Effect Thrusters Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In this SBIR project, APEI, Inc. is proposing to develop a high efficiency, rad-hard 3.8 kW silicon carbide (SiC) power supply for the Power Processing Unit (PPU) of...

  8. SiC fibre by chemical vapour deposition on tungsten filament

    Indian Academy of Sciences (India)

    Unknown

    Jones 1975). The next generation aircraft engines need lighter high performance structural materials with high temperature capabilities (Sorensen 1993). ... 1997). Ti–6Al–4V/sigma-1240(SiC) composites exhibit a high elastic stiffness (axial elastic modulus above 200 GPa) and fracture strength (UTS ≈ 1⋅8 GPa) and a ...

  9. Machinability evaluation of Al–4% Cu–7.5% SiC metal matrix ...

    Indian Academy of Sciences (India)

    Machinability evaluation of Al–4%Cu–7.5%SiC metal matrix composite (MMC) prepared by powder metallurgy (P/M) process is presented. Specimens are prepared with 99.85% pure aluminum added with 4% copper and 7.5% silicon carbide particles by volume fraction. Scanning electron microscope image shows even ...

  10. Zirconia toughened SiC whisker reinforced alumina composites small business innovation research

    Science.gov (United States)

    Loutfy, R. O.; Stuffle, K. L.; Withers, J. C.; Lee, C. T.

    1987-01-01

    The objective of this phase 1 project was to develop a ceramic composite with superior fracture toughness and high strength, based on combining two toughness inducing materials: zirconia for transformation toughening and SiC whiskers for reinforcement, in a controlled microstructure alumina matrix. The controlled matrix microstructure is obtained by controlling the nucleation frequency of the alumina gel with seeds (submicron alpha-alumina). The results demonstrate the technical feasibility of producing superior binary composites (Al2O3-ZrO2) and tertiary composites (Al2O3-ZrO2-SiC). Thirty-two composites were prepared, consolidated, and fracture toughness tested. Statistical analysis of the results showed that: (1) the SiC type is the key statistically significant factor for increased toughness; (2) sol-gel processing with a-alumina seed had a statistically significant effect on increasing toughness of the binary and tertiary composites compared to the corresponding mixed powder processing; and (3) ZrO2 content within the range investigated had a minor effect. Binary composites with an average critical fracture toughness of 6.6MPam sup 1/2, were obtained. Tertiary composites with critical fracture toughness in the range of 9.3 to 10.1 MPam sup 1/2 were obtained. Results indicate that these composites are superior to zirconia toughened alumina and SiC whisker reinforced alumina ceramic composites produced by conventional techniques with similar composition from published data.

  11. Selected mechanical properties of aluminum composite materials reinforced with SiC particles

    Directory of Open Access Journals (Sweden)

    A. Kurzawa

    2008-07-01

    Full Text Available This work presents the results of research concerning influence of ceramic particles’ content of silicon carbide on selected mechanical properties of type AW-AlCu4Mg2Mn - SiC composite materials. Composites produced of SiC particles with pressure infiltration method of porous preform and subject to hot plastic forming in the form of open die forging were investigated. The experimental samples contained from 5% up to 45% of reinforcing SiC particles of 8÷10μm diameter. Studies of strength properties demonstrated that the best results, in case of tensile strength as well as offset yield strength, might be obtained while applying reinforcement in the amount of 20-25% vol. of SiC. Application of higher than 25% vol. contents of reinforcing particles leads to gradual strength loss. The investigated composites were characterized by very high functional properties, such as hardness and abrasive wear resistance, whose values increase strongly with the increase of reinforcement amount. The presented results of the experiments shall allow for a more precise component selection of composite materials at the stage of planning and design of their properties.

  12. Laser alloying of AI with mixed Ni, Ti and SiC powders

    CSIR Research Space (South Africa)

    Mabhali, Luyolo AB

    2010-03-01

    Full Text Available Laser alloying of aluminium AA1200 was performed with a 4.4kW Rofin Sinar Nd:YAG laser to improve the surface hardness. Alloying was carried out by depositing Ni, Ti and SiC powders of different weight ratios on the aluminum substrate. The aim...

  13. Effect of SiC interlayer between Ti6Al4V alloy and hydroxyapatite films.

    Science.gov (United States)

    Azem, Funda Ak; Birlik, Isil; Braic, Viorel; Toparli, Mustafa; Celik, Erdal; Parau, Anca; Kiss, Adrian; Titorencu, Irina; Vladescu, Alina

    2015-04-01

    Bioactive coatings are frequently used to improve the osseointegration of the metallic implants used in dentistry or orthopaedics. Among different types of bioactive coatings, hydroxyapatite (Ca10(PO4)6(OH)2) is one of the most extensively used due to its chemical similarities to the components of bones and teeth. In this article, production and characterization of hydroxyapatite films deposited on Ti6Al4V alloy prepared by magnetron sputtering were reported. Besides, SiC was deposited on substrate surface to study the interlayer effect. Obtained coatings were annealed at 600 °C for 30 and 120 min in a mixed atmosphere of N2 + H2O vapours with the heating rate of 12 °C min(-1). The effects of SiC interlayer and heat treatment parameters on the structural, mechanical and corrosion properties were investigated. After heat treatment process, the crystalline hydroxyapatite was obtained. Additionally, cell viability tests were performed. The results show that the presence of the SiC interlayer contributes a decrease in surface roughness and improves the mechanical properties and corrosion performance of the hydroxyapatite coatings. Biological properties were not affected by the presence of the SiC interlayer. © IMechE 2015.

  14. Laser surface alloying of aluminum (AA1200) with Ni and SiC Powders

    CSIR Research Space (South Africa)

    Mabhali, Luyolo AB

    2010-12-01

    Full Text Available An Nd:YAG laser was used for surface alloying of aluminum AA1200. The alloying powder was a mixture of Ni and SiC in different ratios. A study of the microstructures obtained after alloying was conducted using optical and scanning electron...

  15. PSpice Modeling Platform for SiC Power MOSFET Modules with Extensive Experimental Validation

    DEFF Research Database (Denmark)

    Ceccarelli, Lorenzo; Iannuzzo, Francesco; Nawaz, Muhammad

    2016-01-01

    The aim of this work is to present a PSpice implementation for a well-established and compact physics-based SiC MOSFET model, including a fast, experimental-based parameter extraction procedure in a MATLAB GUI environment. The model, originally meant for single-die devices, has been used...

  16. A Fast Electro-Thermal Co-Simulation Modeling Approach for SiC Power MOSFETs

    DEFF Research Database (Denmark)

    Ceccarelli, Lorenzo; Bahman, Amir Sajjad; Iannuzzo, Francesco

    2017-01-01

    the FEM simulation of the DUT’s structure, performed in ANSYS Icepack. A MATLAB script is used to process the simulation data and feed the needed settings and parameters back into the simulation. The parameters for a CREE 1.2 kV/30 A SiC MOSFET have been identified and the electro-thermal model has been...

  17. TiO2 and SiC nanostructured films, organized CNT structures

    Indian Academy of Sciences (India)

    some nanomaterials (TiO2 and SiC nanostructured films, organized CNT structures, ZnO ... to remove micro and nanoscale contaminants from water and heavy hydrocarbons from petroleum. ZnO has been ... The possible mechanism for photocatalytic degradation of phenol using nano- structured TiO2 as a photocatalyst is ...

  18. Compósitos SiCf /SiC utilizados em sistemas de proteção térmica SiCf /SiC composites for thermal protection systems

    Directory of Open Access Journals (Sweden)

    M. Florian

    2005-09-01

    Full Text Available Compósitos de carbeto de silício (SiC reforçado com fibras de carbeto de silício (SiCf são materiais candidatos em potencial para utilização em sistemas de proteção térmica em altas temperaturas devido principalmente à boa condutividade térmica na direção da fibra e muito baixa condutividade térmica na direção transversal à fibra, alta dureza, estabilidade térmica e à corrosão por oxidação. O compósito SiCf/SiC possui uma matriz de SiC reforçada com fibras contínuas policristalinas de SiC e é obtido por reações de conversão em altas temperaturas e atmosfera controlada, utilizando o compósito carbono/carbono como precursor. O processo de Reação Química em Vapor (CVR foi utilizado para a fabricação de compósitos SiCf/SiC com alta pureza na fase de SiC-beta. O compósito precursor de carbono/carbono foi fabricado com fibra de carbono não estabilizada e matriz carbonosa derivada da resina fenólica na forma de carbono isotrópico. O compósito convertido exibiu uma densidade de 1,75 g/cm³, com 40% de porosidade aberta e resistência à flexão de 80 MPa medida por ensaio flexão em 4 pontos. A área especifica medida pela técnica de BET é dependente da temperatura de conversão e das condições inicias do precursor de carbono, podendo chegar a 18 m²/g.Composites based on silicon carbide are potential candidate materials for thermal protection systems mainly due to its good thermal conductivity in fiber direction and very low transversal thermal conductivity, high hardness, corrosion and thermal resistance. SiCf/SiC composite presents a SiC matrix reinforced with SiC polycrystalline continuous fibers. The composite was obtained by conversion reactions at high temperature and controlled atmosphere from a carbon/carbon composite precursor. The CVR process was used to fabricate SiC /SiC composite with crystalline high-purity beta-SiC from a carbon-carbon precursor fabricated with non-stabilized carbon fiber and

  19. The Benefits of SiC MOSFETs in a T-Type Inverter for Grid-Tie Applications

    DEFF Research Database (Denmark)

    Anthon, Alexander; Zhang, Zhe; Andersen, Michael A. E.

    2016-01-01

    at the expense of increased switching losses since these outer switches must now block the full DC link voltage. Silicon Carbide (SiC) MOSFET devices potentially offer substantial advantage in this context with their lower switching losses, but the benefit of replacing all switching devices in a T-Type inverter...... with SiC MOSFETs is not so clear-cut. This paper now explores this issue by presenting a detailed comparison of the use of Si and SiC devices for a three-level T-Type inverter operating in grid-tie applications. The study uses datasheet values, switching loss measurements and calibrated heat sink thermal...

  20. Creep of SiC Hot-Pressed with Al, B, and C

    Energy Technology Data Exchange (ETDEWEB)

    Sixta, Mark Eldon [Univ. of California, Berkeley, CA (United States)

    2000-03-31

    The creep of a high strength, high toughness SiC, sintered with Al, B, and C was investigated. For elevated temperature applications, the time-dependent deformation, creep response, must be fully characterized for candidate materials. The mechanisms responsible for high temperature deformation in ABC-SiC were evaluated. The creep response was compared to materials that have glassy grain boundary phases but do not have interlocked grains. The creep mechanisms were assessed.

  1. Notes on the plasma resonance peak employed to determine doping in SiC

    Science.gov (United States)

    Engelbrecht, J. A. A.; van Rooyen, I. J.; Henry, A.; Janzén, E.; Sephton, B.

    2015-09-01

    The doping level of a semiconductor material can be determined using the plasma resonance frequency to obtain the carrier concentration associated with doping. This paper provides an overview of the procedure for the three most common polytypes of SiC. Results for 3C-SiC are presented and discussed. In phosphorus doped samples analysed, it is submitted that the 2nd plasma resonance cannot be detected due to high values of the free carrier damping constant γ.

  2. Influence of Milling Time on the Crystallite Size of AlSi5Cu2/SiC Composite Powder

    Directory of Open Access Journals (Sweden)

    Suśniak M.

    2016-06-01

    Full Text Available AlSi5Cu2/SiC nanocrystalline composite powder was successfully obtained by mechanical alloying of AlSi5Cu2 chips with reinforcement of 0, 10, 15, 20 wt. % of silicon carbide. X-ray powder diffraction was used to characterize obtained material. Detailed analyses using transmission and scanning electron microscopy have been conducted in order to collaborate the grain size measurement determined from the XRD analyses. Powders produced in a planetary ball mill with milling time: 1, 5, 10, 15, 20 and 40 hours, have shown shape and size evaluation during mechanical alloying process. It can be seen tendency to decrease the size of the grain as the milling time is increased. It is also noted that the grains of composites (AlSi5Cu2/SiC are smaller than samples prepares without SiC addition. 40 hours of milling lead to formed very small grains of Al phase (20 nm in average in composite powder.

  3. Packaging Technology Developed for High-Temperature SiC Sensors and Electronics

    Science.gov (United States)

    Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Lei, Jih-Fen

    2000-01-01

    A ceramic- and thick-film-materials-based prototype electronic package designed for silicon carbide (SiC) high-temperature sensors and electronics has been successfully tested at 500 C in an oxygen-containing air environment for 500 hours. This package was designed, fabricated, assembled, and electronically evaluated at the NASA Glenn Research Center at Lewis Field with an in-house-fabricated SiC semiconductor test chip. High-temperature electronics and sensors are necessary for harsh-environment space and aeronautical applications, such as space missions to the inner solar system or the emission control electronics and sensors in aeronautical engines. Single-crystal SiC has such excellent physical and chemical material properties that SiC-based semiconductor electronics can operate at temperatures over 600 C, which is significantly higher than the limit for Si-based semiconductor devices. SiC semiconductor chips were recently demonstrated to be operable at temperatures as high as 600 C, but only in the probe station environment because suitable packaging technology for sensors and electronics at temperatures of 500 C and beyond did not exist. Thus, packaging technology for SiC-based sensors and electronics is immediately needed for both application and commercialization of high-temperature SiC sensors and electronics. In response to this need, researchers at Glenn designed, fabricated, and assembled a prototype electronic package for high-temperature electronics, sensors, and microelectromechanical systems (MEMS) using aluminum nitride (AlN) substrate and gold (Au) thick-film materials. This prototype package successfully survived a soak test at 500 C in air for 500 hours. Packaging components tested included thick-film high-temperature metallization, internal wire bonds, external lead bonds, and a SiC diode chip die-attachment. Each test loop, which was composed of thick-film printed wire, wire bond, and lead bond was subjected to a 50-mA direct current for 250

  4. Mechanical performance of SiC based MEMS capacitive microphone for ultrasonic detection in harsh environment

    Science.gov (United States)

    Zawawi, S. A.; Hamzah, A. A.; Mohd-Yasin, F.; Majlis, B. Y.

    2017-08-01

    In this project, SiC based MEMS capacitive microphone was developed for detecting leaked gas in extremely harsh environment such as coal mines and petroleum processing plants via ultrasonic detection. The MEMS capacitive microphone consists of two parallel plates; top plate (movable diaphragm) and bottom (fixed) plate, which separated by an air gap. While, the vent holes were fabricated on the back plate to release trapped air and reduce damping. In order to withstand high temperature and pressure, a 1.0 μm thick SiC diaphragm was utilized as the top membrane. The developed SiC could withstand a temperature up to 1400°C. Moreover, the 3 μm air gap is invented between the top membrane and the bottom plate via wafer bonding. COMSOL Multiphysics simulation software was used for design optimization. Various diaphragms with sizes of 600 μm2, 700 μm2, 800 μm2, 900 μm2 and 1000 μm2 are loaded with external pressure. From this analysis, it was observed that SiC microphone with diaphragm width of 1000 μm2 produced optimal surface vibrations, with first-mode resonant frequency of approximately 36 kHz. The maximum deflection value at resonant frequency is less than the air gap thickness of 8 mu;m, thus eliminating the possibility of shortage between plates during operation. As summary, the designed SiC capacitive microphone has high potential and it is suitable to be applied in ultrasonic gas leaking detection in harsh environment.

  5. Analysis and recommendations for DPA calculations in SiC

    Energy Technology Data Exchange (ETDEWEB)

    Heinisch, H.L. [Pacific Northwest National Lab., Richland, WA (United States)

    1998-09-01

    Recent modeling results, coupled with the implications of available experimental results, provide sufficient information to achieve consensus on the values of threshold displacement energies to use in displacements per atom (DPA) calculations. The values recommended here, 20 eV for C and 35 eV for Si, will be presented for adoption by the international fusion materials community at the next IEA SiC/SiC workshop.

  6. Early implementation of SiC cladding fuel performance models in BISON

    Energy Technology Data Exchange (ETDEWEB)

    Powers, Jeffrey J. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2015-09-18

    SiC-based ceramic matrix composites (CMCs) [5–8] are being developed and evaluated internationally as potential LWR cladding options. These development activities include interests within both the DOE-NE LWR Sustainability (LWRS) Program and the DOE-NE Advanced Fuels Campaign. The LWRS Program considers SiC ceramic matrix composites (CMCs) as offering potentially revolutionary gains as a cladding material, with possible benefits including more efficient normal operating conditions and higher safety margins under accident conditions [9]. Within the Advanced Fuels Campaign, SiC-based composites are a candidate ATF cladding material that could achieve several goals, such as reducing the rates of heat and hydrogen generation due to lower cladding oxidation rates in HT steam [10]. This work focuses on the application of SiC cladding as an ATF cladding material in PWRs, but these work efforts also support the general development and assessment of SiC as an LWR cladding material in a much broader sense.

  7. Atomic-Scale Mechanism of Efficient Hydrogen Evolution at SiC Nanocrystal Electrodes.

    Science.gov (United States)

    Shen, Xiao; Pantelides, Sokrates T

    2013-01-03

    Efficient electrochemical hydrogen evolution at ultrathin 3C-SiC nanocrystal electrodes in acid solutions was recently reported, but the atomic-scale mechanism of the reaction was not identified. Here we report quantum mechanical calculations of pertinent reactions and show that the reaction happens at pre-existing hydrogenated surface Si-H sites through a mechanism that is related to the Volmer-Heyrovsky mechanism that occurs in metals. Here the Heyrovsky reaction occurs as the first step, where an electron from the substrate reacts with a hydronium adsorbed at a Si-H site, creating an H2 molecule and a Si dangling bond. The Volmer reaction follows and regenerates the Si-H. This ordering of reactions is supported by the fact that the hydrogen coverage on SiC electrodes does not depend on the applied voltage, in contrast to the cases of metal electrodes. Moreover, the Volmer reaction, which is a one-step process on metal surface, is a two-step process here. We then show that the rise of the conduction band due to quantum confinement accounts for the fact that only ultrasmall SiC nanocrystals are electrochemically active. We also show that the ability of a Si-H bond to bind a hydronium is essential for the hydrogen evolution to occur at high rate.

  8. Elastic and inelastic properties of SiC/Si biomorphic composites and biomorphic SiC based on oak and eucalyptus

    Science.gov (United States)

    Kardashev, B. K.; Nefagin, A. S.; Smirnov, B. I.; de Arellano-Lopez, A. R.; Martinez-Fernandez, J.; Sepulveda, R.

    2006-09-01

    This paper reports on the results of a comparative investigation into the elastic and microplastic properties of biomorphic SiC/Si composites and biomorphic SiC prepared by pyrolysis of oak and eucalyptus with subsequent infiltration of molten silicon into a carbon matrix and additional chemical treatment to remove excess silicon. The acoustic studies were performed by the composite oscillator technique using resonant longitudinal vibrations at frequencies of about 100 kHz. It is shown that, in biomorphic SiC (as in biomorphic SiC/Si) at small-amplitude strains ɛ, adsorption and desorption of the environmental (air) molecules determine to a considerable extent the Young’s modulus E and the internal friction (decrement of acoustic vibrations δ) and that the changes in E and δ at these amplitudes are irreversible. The stress-microplastic strain curves are constructed from the acoustic data for the materials under study at temperatures of 100 and 290 K.

  9. Technique for measuring irradiation creep in polycrystalline SiC fibers

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Hamilton, M.L.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States)

    1996-10-01

    A bend stress relaxation (BSR) test has been designed to examine irradiation enhanced creep in polycrystalline SiC fibers being considered for fiber reinforcement in SiC/SiC composite. Thermal creep results on Nicalon-CG and Hi-Nicalon were shown to be consistent with previously published data with Hi-Nicalon showing about a 100{degrees}C improvement in creep resistance. Preliminary data was also obtained on Nicalon-S that demonstrated that its creep resistance is greater than that of Hi-Nicalon.

  10. Polariton Enhanced IR Reflection Spectra of Epitaxial Graphene on SiC

    OpenAIRE

    Daas, B. K.; Daniels, K. M.; Sudarshan, T. S.; Chandrashekhar, M. V. S.

    2010-01-01

    We show ~10x polariton-enhanced infrared reflectivity of epitaxial graphene on 4H-SiC, in SiC's restrahlen band (8-10um). By fitting measurements to theory, we extract the thickness, N, in monolayers (ML), momentum scattering time, Fermi level position of graphene and estimate carrier mobility. By showing that 1/root(ns), the carrier concentration/ML, we argue that scattering is dominated by short-range interactions at the SiC/graphene interface. Polariton formation finds application in near-...

  11. Electrical activity and migration of 90 degrees partial dislocations in SiC

    OpenAIRE

    Savini, G.; Heggie, M I; Öberg, S.; Briddon, P. R.; ,

    2007-01-01

    SiC p-i-n diodes exhibit an increase in the voltage drop under forward bias which has been linked with the increased mobility of partial dislocations. Through first-principles calculations, we investigated the Si(g) and C(g) core 90° partials in 4H-SiC. We showed that both dislocations can sustain the asymmetric and symmetric reconstructions along the dislocation line. The latter reconstructions are always electrically active with a half-filled metallic band and are always more likely to migr...

  12. Microstructure and Tensile Properties of BN/SiC Coated Hi-Nicalon, and Sylramic SiC Fiber Preforms

    Science.gov (United States)

    Bhatt, Ramakrishna T.; Chen, Yuan L.; Morscher, Gregory N.

    2001-01-01

    Batch to batch and within batch variations, and the influence of fiber architecture on room temperature physical and tensile properties of BN/SiC coated Hi-Nicalon and Sylramic SiC fiber preform specimens were determined. The three fiber architectures studied were plain weave (PW), 5-harness satin (5HS) and 8-harness satin (8HS) Results indicate that the physical properties vary up to 10 percent within a batch, and up to 20 percent between batches of preforms. Load-reload (Hysteresis) and acoustic emission methods were used to analyze damage accumulation occurring during tensile loading. Early acoustic emission activity, before observable hysteretic behavior, indicates that the damage starts with the formation of nonbridged tunnel cracks. These cracks then propagate and intersect the load bearing "0" fibers giving rise to hysteretic behavior, For the Hi-Nicalon preform specimens, the onset of "0" bundle cracking stress and strain appeared to be independent of the fiber architecture. Also, the "0" fiber bundle cracking strain remained nearly the same for the preform specimens of both fiber types. Transmission Electron Microscope (TEM) analysis indicates that the Chemical Vapor Infiltration (CVI) Boron Nitride (BN) interface coating is mostly amorphous and contains carbon and oxygen impurities, and the CVI SiC coating is crystalline. No reaction exists between the CVI BN and SiC coating.

  13. Effects of Surface Treatment Processes of SiC Ceramic on Interfacial Bonding Property of SiC-AFRP

    Directory of Open Access Journals (Sweden)

    WEI Ru-bin

    2016-12-01

    Full Text Available To improve the interfacial bonding properties of SiC-aramid fiber reinforced polymer matrix composites (SiC-AFRP, the influences of etching process of SiC ceramic, coupling treatment process, and the adhesives types on the interfacial peel strength of SiC-AFRP were studied. The results show that the surface etching process and coupling treatment process of silicon carbide ceramic can effectively enhance interfacial bonding property of the SiC-AFRP. After soaked the ceramic in K3Fe(CN6 and KOH mixed etching solution for 2 hours, and coupled with vinyl triethoxy silane coupling agent, the interfacial peel strength of the SiC-AFRP significantly increases from 0.45kN/m to 2.20kN/m. EVA hot melt film with mass fraction of 15%VA is ideal for interface adhesive.

  14. Filter optimization of Si and SiC semiconductor-based H5 and Conergy-NPC transformerless PV inverters

    DEFF Research Database (Denmark)

    Saridakis, Stefanos; Koutroulis, Eftichios; Blaabjerg, Frede

    2013-01-01

    semiconductors type (Si- or SiC-based), switching frequency and output filter (LCL- or LLCL-type) employed in H5 and Conergy-NPC PV inverters, considering the simultaneous impact of the factors affecting the PV energy processing performance and PV inverter cost. According to the design results, the optimized Si......C-based PV inverters will inject more energy into the electric grid, compared to the Si-based structures and enable the reduction of the output filter size, weight and cost. Employing an LLCL-type output filter and simultaneously reducing the cost of SiC power semiconductors to the level of their Si......Single-phase transformerless Photovoltaic (PV) inverters are synthesized by combining available solutions in terms of the power section topology, power semiconductors manufacturing technology and structure of the output filter. A design method is presented in this paper for optimizing the power...

  15. Absorption and emission of silicon nanocrystals embedded in SiC: Eliminating Fabry-Pérot interference

    Energy Technology Data Exchange (ETDEWEB)

    Schnabel, M., E-mail: manuel.schnabel@ise.fraunhofer.de [Fraunhofer-Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110 Freiburg (Germany); Department of Materials, University of Oxford, Parks Rd., Oxford OX1 3PH (United Kingdom); Summonte, C.; Canino, M. [Consiglio Nazionale delle Richerche—Istituto per e i Microsistemi, Via Gobetti 101, 40129 Bologna (Italy); Dyakov, S. A. [Department of Materials and Nano Physics, School of Information and Communication Technology, Royal Institute of Technology, Electrum 229, 16440 Kista (Sweden); López-Conesa, L. [MIND–IN2UB, Electronics Department, University of Barcelona, Martí i Franquès 1, E–08028 Barcelona (Spain); Löper, P.; Janz, S. [Fraunhofer-Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110 Freiburg (Germany); Wilshaw, P. R. [Department of Materials, University of Oxford, Parks Rd., Oxford OX1 3PH (United Kingdom)

    2015-01-28

    Silicon nanocrystals embedded in SiC are studied by spectrophotometry and photoluminescence (PL) spectroscopy. Absorptivities are found to be affected by residual Fabry-Pérot interference arising from measurements of reflection and transmission at locations of different film thickness. Multiple computational and experimental methods to avoid these errors in thin film measurements, in general, are discussed. Corrected absorptivity depends on the quantity of Si embedded in the SiC but is independent of the Si crystallinity, indicating a relaxation of the k-conservation criterion for optical transitions in the nanocrystals. Tauc gaps of 1.8–2.0 and 2.12 eV are determined for Si nanoclusters and SiC, respectively. PL spectra exhibit a red-shift of ∼100 nm per nm nominal Si nanocluster diameter, which is in agreement with quantum confinement but revealed to be an artifact entirely due to Fabry-Pérot interference. Several simple experimental methods to diagnose or avoid interference in PL measurements are developed that are applicable to all thin films. Corrected PL is rather weak and invariant with passivation, indicating that non-paramagnetic defects are responsible for rapid non-radiative recombination. They are also responsible for the broad, sub-gap PL of the SiC, and can wholly account for the form of the PL of samples with Si nanoclusters. The PL intensity of samples with Si nanoclusters, however, can only be explained with an increased density of luminescent defects in the SiC due to Si nanoclusters, efficient tunneling of photogenerated carriers from Si nanoclusters to SiC defects, or with emission from a-Si nanoclusters. Films prepared on Si exhibit much weaker PL than the same films prepared on quartz substrates.

  16. Si quantum dots embedded in an amorphous SiC matrix: nanophase control by non-equilibrium plasma hydrogenation.

    Science.gov (United States)

    Cheng, Qijin; Tam, Eugene; Xu, Shuyan; Ostrikov, Kostya Ken

    2010-04-01

    Nanophase nc-Si/a-SiC films that contain Si quantum dots (QDs) embedded in an amorphous SiC matrix were deposited on single-crystal silicon substrates using inductively coupled plasma-assisted chemical vapor deposition from the reactive silane and methane precursor gases diluted with hydrogen at a substrate temperature of 200 degrees C. The effect of the hydrogen dilution ratio X (X is defined as the flow rate ratio of hydrogen-to-silane plus methane gases), ranging from 0 to 10.0, on the morphological, structural, and compositional properties of the deposited films, is extensively and systematically studied by scanning electron microscopy, high-resolution transmission electron microscopy, X-ray diffraction, Raman spectroscopy, Fourier-transform infrared absorption spectroscopy, and X-ray photoelectron spectroscopy. Effective nanophase segregation at a low hydrogen dilution ratio of 4.0 leads to the formation of highly uniform Si QDs embedded in the amorphous SiC matrix. It is also shown that with the increase of X, the crystallinity degree and the crystallite size increase while the carbon content and the growth rate decrease. The obtained experimental results are explained in terms of the effect of hydrogen dilution on the nucleation and growth processes of the Si QDs in the high-density plasmas. These results are highly relevant to the development of next-generation photovoltaic solar cells, light-emitting diodes, thin-film transistors, and other applications.

  17. A Structural Based Thermal Model Description for Vertical SiC Power MOSFETs under Fault Conditions

    Directory of Open Access Journals (Sweden)

    Andreas Maerz

    2016-01-01

    Full Text Available The accurate prediction of the SiC MOSFET withstanding time for single fault events greatly influences the requirements for device protection circuits for these devices in power converter applications, like voltage source inverters or power electronic transformers. For this reason, a thermal model, based on the structural design and the physical dimensions of the chip as well as material properties of 4H-SiC, is proposed. This article gives a general description of the thermal behaviour of vertical SiC MOSFET under various driving and boundary conditions in case of a short-circuit event. The thermal model substitutes destructive tests of a device for an individual set of boundary conditions of an occurring fault event. The validity of the analytically parametrised thermal model is verified by experimental short-circuit tests of state-of-the-art vertical SiC MOSFETs for a set of various boundary conditions. The investigated thermal model can furthermore be used to standardise different gate-oxide degradation values from the literature for means of lifetime prediction of the gate oxide for an individual application under repetitive occurring fault or overload conditions. These manufacturer specific reported values measured with no standardised testing procedures can be translated into a maximum junction temperature, which is repeatedly reached. The thermal model therefore provides a unifying parameter for the gate-oxide lifetime calculation for an individual chip and application.

  18. Damage formation and optical absorption in neutron irradiated SiC

    Energy Technology Data Exchange (ETDEWEB)

    Wendler, E., E-mail: elke.wendler@uni-jena.de [Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Bierschenk, Th.; Felgentraeger, F.; Sommerfeld, J.; Wesch, W. [Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Alber, D.; Bukalis, G. [Campus Lise-Meitner, Abteilung F-A1, Elementanalytik, Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Prinsloo, L.C.; Berg, N. van der; Friedland, E.; Malherbe, J.B. [Department of Physics, University of Pretoria, 0002 Pretoria (South Africa)

    2012-09-01

    The defect formation in neutron irradiated SiC was investigated by means of Rutherford backscattering spectrometry in channelling mode (RBS), optical absorption and Raman spectroscopy. The relative defect concentration determined by RBS increases linearly with the neutron fluence without any saturation in the investigated fluence region. The spectral dependence of the absorption coefficient {alpha} at photon energies below 3.2 eV is independent of the neutron fluence and corresponds to that observed in low-fluence ion implanted SiC. An increase of the defect concentration exhibits only in an increase of the absolute value of {alpha}. For photon energies above 3.3 eV again an exponential increase of the absorption coefficient is found but with a slope increasing with rising defect concentration. This absorption is assumed to be of the Urbach type. Around 1.56 eV a broad absorption band is observed which is most probably caused by divacancies V{sub Si}V{sub C}. The defects produced by the neutron irradiation of SiC result in a decrease of the peak intensity and a shift of the position of TO and LO Raman peaks towards lower wave numbers. The latter can be explained by tensile stress due to defects and mass increase of lattice atoms due to neutron capturing.

  19. High voltage 4H SiC rectifiers using Pt and Ni metallization

    Energy Technology Data Exchange (ETDEWEB)

    Saxena, V.; Steckl, A.J. [Cincinnati Univ., OH (United States). Nanoelectronic Lab.

    1998-08-01

    We have fabricated high voltage 4H SiC rectifier diodes using Ni and Pt as metals for the Schottky contacts. At a current density of 100 A/cm{sup 2}, these diodes had a forward voltage drop of 1.76 and 1.86 V, respectively. Both Ni- and Pt-SiC diodes had breakdown voltages >1000 V. Pt-based SiC diodes exhibited a higher on-off current ratio (>10{sup 8}) and lower ideality factor (1.11) at room temperature than the Ni-based diodes (>10{sup 6} and 1.29). The diodes were operated at elevated temperatures up to 450 C for forward bias and 300 C for reverse bias. The room temperature barrier height of Ni on 4H SiC was determined to be 1.31 eV and the specific on-resistance of the diodes was found to be {proportional_to}8 m{Omega}-cm{sup 2}. (orig.) 9 refs.

  20. In-situ formation of SiC nanocrystals by high temperature annealing of SiO2/Si under CO: A photoemission study

    Science.gov (United States)

    D'angelo, M.; Deokar, G.; Steydli, S.; Pongrácz, A.; Pécz, B.; Silly, M. G.; Sirotti, F.; Cavellin, C. Deville

    2012-04-01

    We have studied CO interaction with SiO2/Si system at high temperature (~ 1100 °C) and 350 mbar by core-level photoemission. Even for short annealing time (5 min) the signal from Si2p and C1s core levels shows a clear change upon CO treatment. Shifted components are attributed to formation of SiC. This is confirmed by TEM imaging which further shows that the silicon carbide is in the form of nano-crystals of the 3C polytype. Photoemission spectroscopy moreover reveals the formation of silicon oxicarbide which could not be evidenced by other methods. Combining these results with previous Nuclear Resonance Profiling study gives a deeper insight into the mechanisms involved in the nanocrystals growth and especially for the reaction equation leading to SiC formation. We show that CO diffuses as a molecule through the silica layer and reacts with the silicon substrate according the following reaction: 4 CO + 4 SiSiO2 + 2SiC + SiO2C2.

  1. Amorphous Ni–Zr layer applied for microstructure improvement of Ni-based ohmic contacts to SiC

    Energy Technology Data Exchange (ETDEWEB)

    Wzorek, M., E-mail: mwzorek@ite.waw.pl; Czerwinski, A.; Borysiewicz, M.A.; Gołaszewska, K.; Myśliwiec, M.; Ratajczak, J.; Piotrowska, A.; Kątcki, J.

    2015-09-15

    Highlights: • Thin Ni–Si layers on SiC were studied after annealing. • Different types of microstructural defects occur depending on Ni:Si ratio. • Mechanisms leading to morphology degradation are discussed. • Presented method improves the microstructure of ohmic contacts to SiC. - Abstract: The new approach to fabrication process of nickel-based ohmic contacts to silicon carbide (SiC) is presented. During the first annealing step (300 °C), the amorphous Ni–Zr layer retards diffusion between two nickel silicide layers, thus handling the contradictory requirements for optimal Ni:Si ratio. Different stoichiometry obtained in each silicide layer allows to preserve smooth interface with SiC and simultaneously to avoid relatively easily meltable Si-rich Ni–Si phases during high temperature annealing (1000 °C) and therefore prevents morphology degradation. After annealing at 1000 °C only one final nickel silicide layer is present and Zr atoms are agglomerated at its surface. Morphology of the final silicide layer is substantially improved when compared to typical Ni-based contacts obtained by similar high-temperature annealings. The improved microstructure of the ohmic contact is a promising advantage in terms of SiC devices reliability.

  2. Ab initio potential energy surface and vibration-rotation energy levels of silicon dicarbide, SiC2.

    Science.gov (United States)

    Koput, Jacek

    2016-10-05

    The accurate ground-state potential energy surface of silicon dicarbide, SiC2 , has been determined from ab initio calculations using the coupled-cluster approach. Results obtained with the conventional and explicitly correlated coupled-cluster methods were compared. The core-electron correlation, higher-order valence-electron correlation, and scalar relativistic effects were taken into account. The potential energy barrier to the linear SiCC configuration was predicted to be 1782 cm(-1) . The vibration-rotation energy levels of the SiC2 , (29) SiC2 , (30) SiC2 , and SiC(13) C isotopologues were calculated using a variational method. The experimental vibration-rotation energy levels of the main isotopologue were reproduced to high accuracy. In particular, the experimental energy levels of the highly anharmonic vibrational ν3 mode of SiC2 were reproduced to within 6.7 cm(-1) , up to as high as the v3  = 16 state. © 2016 Wiley Periodicals, Inc.

  3. In-pile Hydrothermal Corrosion Evaluation of Coated SiC Ceramics and Composites

    Energy Technology Data Exchange (ETDEWEB)

    Carpenter, David [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Ang, Caen [Univ. of Tennessee, Knoxville, TN (United States); Katoh, Yutai [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Linton, Kory D. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Terrani, Kurt A. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2017-09-01

    Hydrothermal corrosion accelerated by water radiolysis during normal operation is among the most critical technical feasibility issues remaining for silicon carbide (SiC) composite-based cladding that could provide enhanced accident-tolerance fuel technology for light water reactors. An integrated in-pile test was developed and performed to determine the synergistic effects of neutron irradiation, radiolysis, and pressurized water flow, all of which are relevant to a typical pressurized water reactor (PWR). The test specimens were chosen to cover a range of SiC materials and a variety of potential options for environmental barrier coatings. This document provides a summary of the irradiation vehicle design, operations of the experiment, and the specimen loading into the irradiation vehicle.

  4. Nonreciprocal optical properties of thermal radiation with SiC grating magneto-optical materials.

    Science.gov (United States)

    Wang, Han; Wu, Hao; Shen, Zhiyuan

    2017-08-07

    We demonstrate the nonreciprocal optical phenomenon of SiC gratings on substrate in infrared band, in which the Lorentz-Drude equations of dielectric constant tensor are proposed to describe the nonreciprocal optical properties as magnetic field applied on the magneto-optical materials, under variable intensity and wavelength. Moreover, the properly designed geometrical factors are proposed, and the good nonreciprocal absorption properties of SiC in thermal radiation wavelength band are presented. The dependence of the absorptivity as a function of different structure parameters, such as thickness of different layers, filling ratios, is studied in details. Furthermore, the electric field intensity is also presented for understanding light coupling, propagation. Numerical evidence shows that the nonreciprocal absorption performance is sensitive to the incidence angle, as well as the magnetic field strength. The relative study is useful to the thermal radiative design in photovoltaic and optical instrument.

  5. Silicon Carbide (SiC) Power Processing Unit (PPU) for Hall Effect Thrusters

    Science.gov (United States)

    Reese, Bradley

    2015-01-01

    Arkansas Power Electronics International (APEI), Inc., is developing a high-efficiency, radiation-hardened 3.8-kW SiC power supply for the PPU of Hall effect thrusters. This project specifically targets the design of a PPU for the high-voltage Hall accelerator (HiVHAC) thruster, with target specifications of 80- to 160-V input, 200- to 700-V/5A output, efficiency greater than 96 percent, and peak power density in excess of 2.5 kW/kg. The PPU under development uses SiC junction field-effect transistor power switches, components that APEI, Inc., has irradiated under total ionizing dose conditions to greater than 3 MRad with little to no change in device performance.

  6. Production of Rare Earth Isotope Beams for Radiotracer-DLTS on SiC

    CERN Multimedia

    2002-01-01

    Electrical properties of semiconductors are extremely sensitive to minor traces of impurities and defects. This fact allows to intentionally modify material properties and is thus the very basis of semiconductor electronics and optoelectronics. In the present project, electronic properties and doping effects of rare-earth elements in the technologically important semiconductor SiC are to be investigated using optical and electrical characterization techniques like Photoluminescence, Deep Level Transient Spectroscopy and Thermal Admittance Spectroscopy. By using the elemental transmutation of radioactive isotopes as a tracer, it will be guaranteed that the impurity-related band gap states can definitively be distinguished from intrinsic or process-induced defects. For SiC up to now only detailed investigation of Er- related deep levels have been reported, preliminary data exist for Sm- and Gd- impurities. In this project we propose the implantation of Pr and Eu isotopes for detailed level studies.

  7. Development of nanoporous TiO2 and SiC membranes for membrane filtration

    DEFF Research Database (Denmark)

    König, Katja; Vigna, Erika; Farsi, Ali

    Reverse osmosis membranes are increasingly used for the production of drinking water (desalination of sea water or brackish water), for demineralisation of water in industrial processes (boiled feed water, microelectronics production) as well as in food processing and pharmaceutical production....... Today´s reverse osmosis membranes are made of polymers; however, these membranes have several technical limitations, for example, low water fluxes and high sensitivity to oxidizing chemicals. Since membrane fouling is still a major problem in reverse osmosis desalination plants, replacement of polymer...... reverse osmosis membranes by ceramic counterparts would provide higher fluxes and allow more efficient cleaning of the membranes. The aim of this work was to prepare defect-free nanoporous ceramic (TiO2 and SiC) layers on macroporous SiC supports by using electrophoretic deposition and dip...

  8. Ubiquitous interstellar diamond and SiC in primitive chondrites - Abundances reflect metamorphism

    Science.gov (United States)

    Huss, Gary R.

    1990-01-01

    It is shown here that interstellar diamond and SiC were incorporated into all groups of chondrite meteorites. Abundances rapidly go to zero with increasing metamorphic grade, suggesting that metamorphic destruction is responsible for the apparent absence of these grains in most chondrites. In unmetamorphosed chondrites, abundances normalized to matrix content are similar for different classes. Diamond samples from chondrites of different classes have remarkably similar noble-gas constants and isotropic compositions, although constituent diamonds may have come from many sources. SiC seems to be more diverse, partly because grains are large enough to measure individually, but average characteristics seem to be similar from meteorite to meteorite. These observations suggest that various classes of chondritic meteorites sample the same solar system-wide reservoir of interstellar grains.

  9. Electromagnetic interference shielding performance of nano-layered Ti3SiC2 ceramics at high-temperatures

    Directory of Open Access Journals (Sweden)

    Sigong Li

    2018-01-01

    Full Text Available The X-band electromagnetic interference (EMI shielding properties of nano-layered Ti3SiC2 ceramics were evaluated from room temperature up to 800°C in order to explore the feasibility of Ti3SiC2 as efficient high temperature EMI shielding material. It was found that Ti3SiC2 exhibits satisfactory EMI shielding effectiveness (SE close to 30 dB at room temperature and the EMI SE shows good temperature stability. The remarkable EMI shielding properties of Ti3SiC2 can be mainly attributed to high electrical conductivity, high dielectric loss and more importantly the multiple reflections due to the layered structure.

  10. High Temperature All Silicon-Carbide (SiC) DC Motor Drives for Venus Exploration Vehicles Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This Small Business Innovation Research Phase I project seeks to prove the feasibility of creating high-temperature silicon-carbide (SiC) based motor drives for...

  11. Quantitative Analysis of Efficiency Improvement of a Propulsion Drive by Using SiC Devices: A Case of Study

    National Research Council Canada - National Science Library

    Kumar, Kundan; Bertoluzzo, Manuele; Buja, Giuseppe; Ortenzi, Fernando

    2017-01-01

    ...) IGBT devices with silicon carbide (SiC) MOSFETs. To this end, the paper starts by deriving the voltage-current solicitations of the inverter over the working torque-speed plane of the propulsion motor...

  12. High Quality, Low-Scatter SiC Optics Suitable for Space-based UV & EUV Applications Project

    Data.gov (United States)

    National Aeronautics and Space Administration — SSG Precision Optronics proposes the development and demonstration of a new optical fabrication process for the production of EUV quality Silicon Carbide (SiC)...

  13. High Quality, Low-Scatter SiC Optics Suitable for Space-based UV & EUV Applicati Project

    Data.gov (United States)

    National Aeronautics and Space Administration — SSG Precision Optronics proposes the development of a novel optical manufacturing process that will allow the production of state-of-the-art Silicon Carbide (SiC)...

  14. Effect of SiC Nano powder on Multiaxial Woven and Chopped Randomly Oriented Flax/Sisal Fiber Reinforced composites

    Directory of Open Access Journals (Sweden)

    Kalagi Ganesh R.

    2018-01-01

    Full Text Available A study has been carried out to investigate effect of SiC Nano powder on tensile and impact properties of Multiaxial layers of Flax and Sisal fiber reinforced composites and randomly oriented chopped Flax and Sisal fiber reinforced composites. It has been observed that tensile strength and impact strength were improved using 6% of SiC Nanopowder into Multiaxial layer (+45º/-45º, 0º/90º of Flax and Sisal where as randomly oriented chopped Flax and Sisal fiber reinforced composites are improved in its stiffnes for the same composition of fiber, epoxy and SiC Nano powder. SEM Analysis are done to analyse the distribution of SiC in both Multiaxial layers of Flax and Sisal fiber reinforced composites and randomly oriented chopped Flax and Sisal fiber reinforced composites.

  15. In-situ growth mode control of AlN on SiC substrate by sublimation closed space technique

    Science.gov (United States)

    Dojima, Daichi; Ashida, Koji; Kaneko, Tadaaki

    2018-02-01

    For the growth of AlN single crystal with large diameter and low dislocation density on SiC substrate by physical vapor transport (PVT), a dislocation blocking buffer layer (DBBL) has been simply developed by optimizing the AlN growth parameters such as temperature gradient (ΔT), substrate temperature (Tsub), and N2 partial pressure (PN2) at the initial growth stage. Increase in ΔT resulted in the formation of an abrupt AlN/SiC interface due to the suppression of inhomogeneous thermal decomposition at the interface and the subsequent AlN unstable island growth. The well-defined AlN/SiC interface played an important role in controlling the two kinds of different AlN growth mode in-situ as functions of Tsub and PN2. One is a continuous step-flow growth mode, and the other is a discontinuous platelet-like growth. The discontinuous AlN layer, consisting of thin AlN platelets and air-gaps inserted between the two adjacent platelets, acted as the DBBL. By introducing the DBBL at the initial growth stage, followed by the step-flow growth, continuous AlN layer with dislocation density of 1.7 × 106 cm-2 was achieved at a total growth thickness of 60 μm, which is two orders of magnitude lower than the previously reported value.

  16. Halogenation of SiC for band-gap engineering and excitonic functionalization

    OpenAIRE

    Drissi, L.B.; Ramadan, F. Z.; Lounis, S.

    2017-01-01

    The optical excitation spectra and excitonic resonances are investigated in systematically functionalized SiC with Fluorine and/or Chlorine utilizing density functional theory in combination with many-body perturbation theory. The latter is required for a realistic description of the energy band-gaps as well as for the theoretical realization of excitons. Structural, electronic and optical properties are scrutinized and show the high stability of the predicted two-dimensional materials. Their...

  17. Interfacial characterisation in transparent spinel matrix reinforced by SiC fibre

    Czech Academy of Sciences Publication Activity Database

    Chlup, Zdeněk; Dlouhý, Ivo; Gürbüz, S.; Dericioglu, A. F.; Kozák, Vladislav

    2009-01-01

    Roč. 409, - (2009), s. 252-259 ISSN 1013-9826. [Fractography of Advanced Ceramics III. Stará Lesná, 07.09.20058-10.09.2008] R&D Projects: GA ČR(CZ) GA106/06/0724; GA AV ČR IAA200410502 Institutional research plan: CEZ:AV0Z20410507 Keywords : interface * composite * transparent spinel * SiC fibre * fracture characteristics Subject RIV: JI - Composite Materials

  18. High Power Silicon Carbide (SiC) Power Processing Unit Development

    Science.gov (United States)

    Scheidegger, Robert J.; Santiago, Walter; Bozak, Karin E.; Pinero, Luis R.; Birchenough, Arthur G.

    2015-01-01

    NASA GRC successfully designed, built and tested a technology-push power processing unit for electric propulsion applications that utilizes high voltage silicon carbide (SiC) technology. The development specifically addresses the need for high power electronics to enable electric propulsion systems in the 100s of kilowatts. This unit demonstrated how high voltage combined with superior semiconductor components resulted in exceptional converter performance.

  19. SiC Design Guide: Manufacture of Silicon Carbide Products (Briefing charts)

    Science.gov (United States)

    2010-06-08

    adhesive fails  Can provides a pad for precision machining (coplanarity) without SiC grinding Page 22 Adhesives  Cryogenic conditions would present...Master Bond® EP21TCH and EP29LSP have service temperatures as low as 4 Kelvin and are resistant to cryogenic shock  EP21TCHT works well with porous...Accurate positioning of critical features such as attachment faces and tabs may be accomplished by grinding . • Tolerances resulting from precision

  20. Switching Investigations on a SiC MOSFET in a TO-247 Package

    OpenAIRE

    Anthon, Alexander; Hernandez Botella, Juan Carlos; Zhang, Zhe; Andersen, Michael A. E.

    2014-01-01

    This paper deals with the switching behavior of a SiC MOSFET in a TO-247 package. Based on simulations, critical parasitic inductances in the circuit layout are analyzed and their effect on the switching losses highlighted. Especially the common source inductance, a critical parameter in a TO-247 package, has a major influence on the switching energy. Crucial design guidelines for an improved double pulse test circuit are introduced which are used for practical investigations on the switching...

  1. FE simulation of the indentation deformation of SiC modified vinylester composites in respect to their abrasive wear performance

    Directory of Open Access Journals (Sweden)

    2008-10-01

    Full Text Available The abrasive sliding friction and wear behaviours of silicon carbide (SiC filled vinylester (VE composites were investigated. The average grain size of the incorporated SiC particles was varied, holding the volume content of them in every case at 16 vol%. Mechanical properties (hardness, compression modulus, yield stress of the filled and neat VE were determined. The tribological properties were investigated in block (composite – on – ring (steel test configuration. The steel counter bodies were covered with abrasive papers of different graining. Coefficient of friction (COF and specific wear rate of the VE + SiC composites were determined. It was observed that the wear resistance increases with increasing average filler grain size and with decreasing abrasiveness of the counter surface. The COF of the VE + SiC composites is independent of the size of the incorporated particles, but it is strongly influenced by the abrasiveness of the counter body. The worn surfaces of the VE + SiC systems were analysed in scanning electron microscope (SEM to deduce the typical wear mechanisms. The size effect of the SiC filler particles onto the abrasive wear characteristics was investigated by assuming that the roughness peaks of the abrasive paper and the indenter of the microhardness test cause similar micro scaled contact deformations in the composites. Therefore FE method was used to simulate the micro scaled deformation process in the VE + SiC systems during microindentation tests. The FE results provided valuable information on how to explain the size effect of the incorporated SiC filler.

  2. Effect of Copper Coated SiC Reinforcements on Microstructure, Mechanical Properties and Wear of Aluminium Composites

    Science.gov (United States)

    Kori, P. S.; Vanarotti, Mohan; Angadi, B. M.; Nagathan, V. V.; Auradi, V.; Sakri, M. I.

    2017-08-01

    Experimental investigations are carried out to study the influence of copper coated Silicon carbide (SiC) reinforcements in Aluminum (Al) based Al-SiC composites. Wear behavior and mechanical Properties like, ultimate tensile strength (UTS) and hardness are studied in the present work. Experimental results clearly revealed that, an addition of SiC particles (5, 10 and 15 Wt %) has lead in the improvement of hardness and ultimate tensile strength. Al-SiC composites containing the Copper coated SiC reinforcements showed better improvement in mechanical properties compared to uncoated ones. Characterization of Al-SiC composites are carried out using optical photomicrography and SEM analysis. Wear tests are carried out to study the effects of composition and normal pressure using Pin-On Disc wear testing machine. Results suggested that, wear rate decreases with increasing SiC composition, further an improvement in wear resistance is observed with copper coated SiC reinforcements in the Al-SiC metal matrix composites (MMC’s).

  3. Modeling thermal and irradiation-induced swelling effects on the integrity of Ti 3 SiC 2 /SiC joints

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Ba Nghiep; Henager, Charles H.; Kurtz, Richard J.

    2017-11-01

    Previously, results for CVD-SiC joints created using solid state displacement reactions to form a dual-phase SiC/MAX phase irradiated at 800°C and 5 dpa indicated some extent of cracking in the joint and along the CVD-SiC/joint interface. This paper elucidates the origin of cracking by thermomechanical modeling combined with irradiation-induced swelling effects using a continuum damage approach with support of micromechanical modeling. Three irradiation temperatures (400°C, 500°C and 800°C) are considered assuming experimental irradiation doses in a range leading to saturation swelling in SiC. The analyses indicate that a SiC/MAX joint heated to 400°C fails during irradiation-induced swelling at this temperature while it experiences some damage after being heated to 500°C and irradiated at the same temperature. However, it fails during cooling from 500°C to room temperature. The joint experiences minor damage when heated to and irradiated at 800°C but does not fail after cooling. The prediction agrees with the experimental findings available for this case.

  4. Wafer-scale epitaxial graphene on SiC for sensing applications

    Science.gov (United States)

    Karlsson, Mikael; Wang, Qin; Zhao, Yichen; Zhao, Wei; Toprak, Muhammet S.; Iakimov, Tihomir; Ali, Amer; Yakimova, Rositza; Syväjärvi, Mikael; Ivanov, Ivan G.

    2015-12-01

    The epitaxial graphene-on-silicon carbide (SiC-G) has advantages of high quality and large area coverage owing to a natural interface between graphene and SiC substrate with dimension up to 100 mm. It enables cost effective and reliable solutions for bridging the graphene-based sensors/devices from lab to industrial applications and commercialization. In this work, the structural, optical and electrical properties of wafer-scale graphene grown on 2'' 4H semi-insulating (SI) SiC utilizing sublimation process were systemically investigated with focus on evaluation of the graphene's uniformity across the wafer. As proof of concept, two types of glucose sensors based on SiC-G/Nafion/Glucose-oxidase (GOx) and SiC-G/Nafion/Chitosan/GOx were fabricated and their electrochemical properties were characterized by cyclic voltammetry (CV) measurements. In addition, a few similar glucose sensors based on graphene by chemical synthesis using modified Hummer's method were also fabricated for comparison.

  5. Halogenation of SiC for band-gap engineering and excitonic functionalization.

    Science.gov (United States)

    Drissi, Lalla Btissam; Ramadan, Fatima Zahra; Lounis, Samir

    2017-09-11

    The optical excitation spectra and excitonic resonances are investigated in systematically functionalized SiC with Fluorine and/or Chlorine utilizing density functional theory in combination with many-body perturbation theory. The latter is required for a realistic description of the energy band-gaps as well as for the theoretical realization of excitons. Structural, electronic and optical properties are scrutinized and show the high stability of the predicted two-dimensional materials. Their realization in laboratory is thus possible. Large band-gaps of the order of 4 eV are found in the so-called GW approximation, with the occurrence of bright excitons, optically active in the four investigated materials. Their binding energies vary from 0.9 eV to 1.75 eV depending on the decoration choice and in one case, a dark exciton is foreseen to exist in the fully chlorinated SiC. The wide variety of opto-electronic properties suggest halogenated SiC as interesting materials with potential not only for solar cell applications, anti-reflection coatings or high-reflective systems but also for a possible realization of excitonic Bose-Einstein condensation. © 2017 IOP Publishing Ltd.

  6. Melting of SiC powders preplaced duplex stainless steel using TIG welding

    Science.gov (United States)

    Maleque, M. A.; Afiq, M.

    2018-01-01

    TIG torch welding technique is a conventional melting technique for the cladding of metallic materials. Duplex stainless steels (DSS) show decrease in performance under aggressive environment which may lead to unanticipated failure due to poor surface properties. In this research, surface modification is done by using TIG torch method where silicon carbide (SiC) particles are fused into DSS substrate in order to form a new intermetallic compound at the surface. The effect of particle size, feed rate of SiC preplacement, energy input and shielding gas flow rate on surface topography, microstructure, microstructure and hardness are investigated. Deepest melt pool (1.237 mm) is produced via TIG torch with highest energy input of 1080 J/mm. Observations of surface topography shows rippling marks which confirms that re-solidification process has taken place. Melt microstructure consist of dendritic and globular carbides precipitate as well as partially melted silicon carbides (SiC) particles. Micro hardness recorded at value ranging from 316 HV0.5 to 1277 HV0.5 which shows increment from base hardness of 260 HV0.5kgf. The analyzed result showed that incorporation of silicon carbide particles via TIG Torch method increase the hardness of DSS.

  7. Halogenation of SiC for band-gap engineering and excitonic functionalization

    Science.gov (United States)

    Drissi, L. B.; Ramadan, F. Z.; Lounis, S.

    2017-11-01

    The optical excitation spectra and excitonic resonances are investigated in systematically functionalized SiC with Fluorine and/or Chlorine utilizing density functional theory in combination with many-body perturbation theory. The latter is required for a realistic description of the energy band-gaps as well as for the theoretical realization of excitons. Structural, electronic and optical properties are scrutinized and show the high stability of the predicted two-dimensional materials. Their realization in laboratory is thus possible. Large band-gaps of the order of 4 eV are found in the so-called GW approximation, with the occurrence of bright excitons, optically active in the four investigated materials. Their binding energies vary from 0.9 eV to 1.75 eV depending on the decoration choice and in one case, a dark exciton is foreseen to exist in the fully chlorinated SiC. The wide variety of opto-electronic properties suggest halogenated SiC as interesting materials with potential not only for solar cell applications, anti-reflection coatings or high-reflective systems but also for a possible realization of excitonic Bose–Einstein condensation.

  8. Technology roadmap for development of SiC sensors at plasma processes laboratory

    Directory of Open Access Journals (Sweden)

    Mariana Amorim Fraga

    2010-08-01

    Full Text Available Recognizing the need to consolidate the research and development (R&D activities in microelectronics fields in a strategic manner, the Plasma Processes Laboratory of the Technological Institute of Aeronautics (LPP-ITA has established a technology roadmap to serve as a guide for activities related to development of sensors based on silicon carbide (SiC thin films. These sensors have also potential interest to the aerospace field due to their ability to operate in harsh environment such as high temperatures and intense radiation. In the present paper, this roadmap is described and presented in four main sections: i introduction, ii what we have already done in the past, iii what we are doing in this moment, and iv our targets up to 2015. The critical technological issues were evaluated for different categories: SiC deposition techniques, SiC processing techniques for sensors fabrication and sensors characterization. This roadmap also presents a shared vision of how R&D activities in microelectronics should develop over the next five years in our laboratory.

  9. Effect of Residual Gas Composition on Epitaxial Growth of Graphene on SiC

    Science.gov (United States)

    Kunc, J.; Rejhon, M.; Belas, E.; Dědič, V.; Moravec, P.; Franc, J.

    2017-10-01

    In recent years, graphene growth optimization has been one of the key routes towards large-scale, high-quality graphene production. We measure in situ residual gas content during epitaxial-graphene growth on silicon carbide (SiC) to find detrimental factors of epitaxial-graphene growth. The growth conditions in high vacuum, in argon, purified argon, and the flow of argon are compared. The grown epitaxial graphene is studied by Raman-scattering mapping. We determine mechanical strain, number of graphene layers and the graphene quality. The surface topography is measured by atomic force microscopy. Charge density and carrier mobility are studied by Hall-effect measurements in van der Pauw configuration. We identify the major role of the chemical reaction of carbon and residual water. The rate of the reaction is lowered when purified argon is used. We also show that, according to time-varying gas content, it is preferable to grow graphene at higher temperatures and shorter times. Other sources of growth environment contamination are also discussed. The reaction of residual gas and SiC is discussed as one of the factors decreasing the lateral size of SiC atomically flat terraces and leading to their irregular shape. The importance of purified argon and its sufficient flow rate is concluded to be important for high-quality graphene growth as it reduces the rate of undesired chemical reactions and provides a more stable and defined growth ambient.

  10. 240 GHz EPR Studies of Intrinsic Defects in 4H SiC

    Science.gov (United States)

    Konovalov, V. V.; Zvanut, M. E.; van Tol, J.; Brunel, L.-C.

    2002-03-01

    Intrinsic defects may strongly influence the conductivity and optical behavior of SiC. Several groups have reported 9.5 GHz EPR studies of a carbon vacancy in electron irradiated p-type and as-grown nominally semi-insulating SiC. Recently, Son et al. interpreted two lines in a 95 GHz EPR spectrum as a carbon vacancy and silicon antisite. We report 240 GHz EPR studies of intrinsic defects in as-grown 4H SiC provided by Cree Inc. The ID-1 line we observed earlier at 9.5 GHz and assigned to a carbon vacancy was resolved at 240 GHz into two lines, ID-1a and ID-1b. As the temperature decreased from 80 to 4 K, with H//c-axis the g-value of ID-1a remained constant at 2.00307, but the g-value of ID-1b decreased from 2.00272 to 2.00235. Concomitantly, the intensity of ID-1a decreased while that of ID-1b increased. Although our data are close to Son’s 95 GHz spectrum, preliminary interpretation of the highly resolved lines obtained at 240 GHz does not suggest a silicon antisite. Illumination with IR light quenches both ID-1a and ID-1b simultaneously, indicating close defect levels. The work is supported by the ONR.

  11. Identification and tackling of a parasitic surface compound in SiC and Si-rich carbide films

    Energy Technology Data Exchange (ETDEWEB)

    Canino, M., E-mail: canino@bo.imm.cnr.it [CNR-IMM, via Gobetti 101, 40129 Bologna (Italy); Summonte, C.; Allegrezza, M. [CNR-IMM, via Gobetti 101, 40129 Bologna (Italy); Shukla, Rimpy [CNR-IMM, via Gobetti 101, 40129 Bologna (Italy); Centre of Non-Conventional Energy Resources, University of Rajasthan, Jaipur (India); Jain, I.P. [Centre of Non-Conventional Energy Resources, University of Rajasthan, Jaipur (India); Bellettato, M.; Desalvo, A.; Mancarella, F.; Sanmartin, M. [CNR-IMM, via Gobetti 101, 40129 Bologna (Italy); Terrasi, A. [CNR-IMM, via Santa Sofia 64, 95123 Catania (Italy); Löper, P.; Schnabel, M.; Janz, S. [Fraunhofer Institute for Solar Energy Systems, Heidenhofstr. 2, 79110 Freiburg (Germany)

    2013-05-15

    Highlights: ► Silicon carbide and silicon rich carbide films are prepared by PECVD. ► Annealing at 1100 °C promotes Si nanocrystal formation in SiC. ► A parasitic SiO{sub x}C{sub y} compound is formed on the surface during annealing. ► The surface affects optical and electrical properties of the nanocrystal layer. ► We analyze a fabrication sequence that minimizes oxidation. ► The resulting surface is SiC-rich. -- Abstract: Silicon carbide and silicon rich carbide (SiC and SRC) thin films were prepared by PECVD and annealed at 1100 °C. Such a treatment, when applied to SiC/SRC multilayers, aimed at the formation of silicon nanocrystals, that have attracted considerable attention as tunable band-gap materials for photovoltaic applications. Optical and structural techniques (X-ray photoelectron spectroscopy, Reflectance and Transmittance, Fourier Transformed Infrared Spectroscopy) were used to evidence the formation, during the annealing treatment in nominally inert atmosphere, of a parasitic ternary SiO{sub x}C{sub y} surface compound, that consumed part of the originally deposited material and behaved as a preferential conductive path with respect to the nanocrystal layer in horizontal electrical conductivity measurements. The SiO{sub x}C{sub y} compound was HF-resistant, with composition dependent on the underlying matrix. It gave rise to a Si-O related vibration in FTIR analysis, that may be misinterpreted as due to silicon oxide. The compound, if neglected, can affect the structural and electrical characterization of the material. To overcome this problem, a procedure is analyzed, based on the deposition of a sacrificial capping a-Si:H layer that partially oxidizes, and is removed by tetra methyl ammonium hydroxide (TMAH) after annealing. XPS analysis revealed that the resulting surface is mainly made up of SiC regardless of the composition of the underlying SRC layer. Subsequent SF{sub 6}:O{sub 2} dry etching results in a porous SiC-rich surface

  12. Behavior of oxygen doped SiC thin films: An x-ray photoelectron spectroscopy study

    Science.gov (United States)

    Avila, A.; Montero, I.; Galán, L.; Ripalda, J. M.; Levy, R.

    2001-01-01

    Thin silicon carbide films have been deposited by chemical vapor deposition on p-type (100) silicon substrates. The composition and bonds formed in these films have been analyzed by x-ray photoelectron spectroscopy (XPS) and infrared spectroscopy. The native surface oxide on the silicon carbide surface induced by air exposure has also been studied. Several phases are detected in the near-surface region: elemental Si, Si oxides (mainly SiO2), Si carbide (SiC) and Si oxicarbides (SiOxCy). Quantitative XPS analysis results indicate that, for atomic oxygen fractions silicon oxicarbide is observed, but a multiphase material formed by elemental Si, Si oxides and Si carbides is observed. In spite of the film being a complex phase mixture, a simple relationship is found between the overall carbon and oxygen compositions. The carbon atomic fraction in the film decreases quasilinearly as the oxygen content increases, with a slope of about -1. An overall composition of SiOxC3-x in the 0.5silicon carbide obtained by CHn+ ion implantation into monocrystalline silicon is made.

  13. Design, preparation and microwave absorbing properties of resin matrix composites reinforced by SiC fibers with different electrical properties

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Haitao, E-mail: xzddlht@163.com [Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha 410073 (China); Science and Technology on Scramjet Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha 410073 (China); Cheng, Haifeng; Tian, Hao [Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

    2014-01-15

    Highlights: • SSMASs have better microwave absorbing properties in smaller thickness. • SSMASs can be realized by SiC fibers with different electrical resistivity. • Resistivity of SiC fibers can be regulated by adjusting surface characteristics. • The bandwidth of SSMASs at reflectivity below −10 dB can reach 11.6 GHz. -- Abstract: One kind of sandwich structure microwave absorbing structures (SSMASs) derived from Salisbury absorbers is reported. The impedance characteristics of SSMASs are analyzed, and the mechanisms of broadening microwave absorbing bandwidth are interpreted by Smith chart. In order to realize SSMASs, high electrical resistivity SiC fibers with Si–C–O surface layers and low electrical resistivity SiC fibers with pyrocarbon surface layers are employed and analyzed by SEM, XPS, AES and HRTEM. The conductive model of SiC fibers with pyrocarbon layers is built and electrical resistivity simulation is done. The SSMASs are fabricated by employing plain woven SiC fiber fabrics with high and low electrical resistivity as reinforcements of dielectric layers and lossy layer, respectively. The microwave absorbing properties of SSMASs are measured and compared with simulated results. The results show that the experimental and simulated results are in good agreement, the SSMASs have better wideband microwave absorbing properties, and the microwave absorbing bandwidth at reflectivity below −10 dB can reach 11.6 GHz.

  14. Light and Strong Hierarchical Porous SiC Foam for Efficient Electromagnetic Interference Shielding and Thermal Insulation at Elevated Temperatures.

    Science.gov (United States)

    Liang, Caiyun; Wang, Zhenfeng; Wu, Lina; Zhang, Xiaochen; Wang, Huan; Wang, Zhijiang

    2017-09-06

    A novel light but strong SiC foam with hierarchical porous architecture was fabricated by using dough as raw material via carbonization followed by carbothermal reduction with silicon source. A significant synergistic effect is achieved by embedding meso- and nanopores in a microsized porous skeleton, which endows the SiC foam with high-performance electromagnetic interference (EMI) shielding, thermal insulation, and mechanical properties. The microsized skeleton withstands high stress. The meso- and nanosized pores enhance multiple reflection of the incident electromagnetic waves and elongate the path of heat transfer. For the hierarchical porous SiC foam with 72.8% porosity, EMI shielding can be higher than 20 dB, and specific EMI effectiveness exceeds 24.8 dB·cm3·g-1 at a frequency of 11 GHz at 25-600 °C, which is 3 times higher than that of dense SiC ceramic. The thermal conductivity reaches as low as 0.02 W·m-1·K-1, which is comparable to that of aerogel. The compressive strength is as high as 9.8 MPa. Given the chemical and high-temperature stability of SiC, the fabricated SiC foam is a promising candidate for modern aircraft and automobile applications.

  15. First-Principles Study of Vacancies in Ti3SiC2 and Ti3AlC2

    Directory of Open Access Journals (Sweden)

    Hui Wang

    2017-01-01

    Full Text Available MAX phase materials have attracted increased attention due to their unique combination of ceramic and metallic properties. In this study, the properties of vacancies in Ti3AlC2 and Ti3SiC2, which are two of the most widely studied MAX phases, were investigated using first-principles calculations. Our calculations indicate that the stabilities of vacancies in Ti3SiC2 and Ti3AlC2 differ greatly from those previously reported for Cr2AlC. The order of the formation energies of vacancies is VTi(a > VTi(b > VC > VA for both Ti3SiC2 and Ti3AlC2. Although the diffusion barriers for Ti3SiC2 and Ti3AlC2 are similar (~0.95 eV, the properties of their vacancies are significantly different. Our results show that the vacancy–vacancy interaction is attractive in Ti3AlC2 but repulsive in Ti3SiC2. The introduction of VTi and VC vacancies results in the lattice constant c along the [0001] direction increasing for both Ti3SiC2 and Ti3AlC2. In contrast, the lattice constant c decreases significantly when VA are introduced. The different effect of VA on the lattice constants is explained by enhanced interactions of nearby Ti layers.

  16. Effect of organic additives on mechanical properties of SiC ceramics prepared by a modified gelcasting method

    Directory of Open Access Journals (Sweden)

    Feng Wang

    2016-12-01

    Full Text Available A novel and simple gel system of isobutylene and maleic anhydride (PIBM was used to prepare SiC ceramics. The rheological behaviour of the SiC slurries was investigated as function of organic additives. The SiC slurries with 0.2 wt.% PIBM and 0.2 wt.% tetramethylammonium hydroxide (TMAH showed low viscosity, which was favourable for casting SiC green bodies. In order to obtain homogeneous green bodies, polyvinyl alcohol (PVA was used to assist the dispersion of carbon black in the slurries, and polyethylene glycol (PEG was added to inhibit the surface exfoliation of green bodies. The content of PVA was controlled carefully to avoid the warpage of green bodies during the drying process. Finally, homogeneous defect-free SiC green bodies were successfully fabricated via aqueous gelcasting. The SiC ceramics sintered at 2100 °C (prepared from slurries with solid content of 60 wt.% showed an average flexural strength of 305.7 MPa with porosity of 19.92%.

  17. Sequential control of step-bunching during graphene growth on SiC (0001)

    Energy Technology Data Exchange (ETDEWEB)

    Bao, Jianfeng; Kusunoki, Michiko [Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603 (Japan); Yasui, Osamu; Norimatsu, Wataru, E-mail: w-norimatsu@imass.nagoya-u.ac.jp; Matsuda, Keita [Department of Applied Chemistry, Graduate School of Engineering, Nagoya University, Nagoya 464-8603 (Japan)

    2016-08-22

    We have investigated the relation between the step-bunching and graphene growth phenomena on an SiC substrate. We found that only a minimum amount of step-bunching occurred during the graphene growth process with a high heating rate. On the other hand, a large amount of step-bunching occurred using a slow heating process. These results indicated that we can control the degree of step-bunching during graphene growth by controlling the heating rate. We also found that graphene coverage suppressed step bunching, which is an effective methodology not only in the graphene technology but also in the SiC-based power electronics.

  18. Donor-acceptor-pair emission characterization in N-B doped fluorescent SiC

    DEFF Research Database (Denmark)

    Ou, Yiyu; Jokubavicius, Valdas; Kamiyama, Satoshi

    2011-01-01

    In the present work, we investigated donor-acceptor-pair emission in N-B doped fluorescent 6H-SiC, by means of photoluminescence, Raman spectroscopy, and angle-resolved photoluminescence. The photoluminescence results were interpreted by using a band diagram with Fermi-Dirac statistics. It is shown...... intensity in a large emission angle range was achieved from angle-resolved photoluminescence. The results indicate N-B doped fluorescent SiC as a good wavelength converter in white LEDs applications....

  19. Long-Term Reliability of a Hard-Switched Boost Power Processing Unit Utilizing SiC Power MOSFETs

    Science.gov (United States)

    Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Iannello, Christopher J.; Del Castillo, Linda Y.; Fitzpatrick, Fred D.; Mojarradi, Mohammad M.; hide

    2016-01-01

    Silicon carbide (SiC) power devices have demonstrated many performance advantages over their silicon (Si) counterparts. As the inherent material limitations of Si devices are being swiftly realized, wide-band-gap (WBG) materials such as SiC have become increasingly attractive for high power applications. In particular, SiC power metal oxide semiconductor field effect transistors' (MOSFETs) high breakdown field tolerance, superior thermal conductivity and low-resistivity drift regions make these devices an excellent candidate for power dense, low loss, high frequency switching applications in extreme environment conditions. In this paper, a novel power processing unit (PPU) architecture is proposed utilizing commercially available 4H-SiC power MOSFETs from CREE Inc. A multiphase straight boost converter topology is implemented to supply up to 10 kilowatts full-scale. High Temperature Gate Bias (HTGB) and High Temperature Reverse Bias (HTRB) characterization is performed to evaluate the long-term reliability of both the gate oxide and the body diode of the SiC components. Finally, susceptibility of the CREE SiC MOSFETs to damaging effects from heavy-ion radiation representative of the on-orbit galactic cosmic ray environment are explored. The results provide the baseline performance metrics of operation as well as demonstrate the feasibility of a hard-switched PPU in harsh environments.

  20. Synthesis of SiC decorated carbonaceous nanorods and its hierarchical composites Si@SiC@C for high-performance lithium ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chundong [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (China); Li, Yi, E-mail: liyi@suda.edu.cn [College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou (China); Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (China); Ostrikov, Kostya [School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, Brisbane, Queensland 4000 (Australia); Plasma Nanoscience, Industrial Innovation Program, CSIRO Manufacturing Flagship, Lindfield, New South Wales 2070 (Australia); Yang, Yonggang [College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou (China); Zhang, Wenjun, E-mail: apwjzh@cityu.edu.hk [Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (China)

    2015-10-15

    SiC- based nanomaterials possess superior electric, thermal and mechanical properties. However, due to the tricky synthesis process, which needs to be carried out under high temperature with multi-step reaction procedures, the further application is dramatically limited. Herein, a simple as well as a controllable approach is proposed for synthesis of SiC- based nanostructures under low temperature. Phenyl-bridged polysilsesquioxane was chosen as the starting material to react with magnesium at 650 °C, following which SiC@C nanocomposites were finally obtained, and it maintains the original bent rod-like architecture of polysilsesquioxanes. The possible formation process for the nanocomposites can proposed as well. The electrochemical behaviour of nanocomposites was accessed, verifying that the synthesized SiC@C nanocomposites deliver good electrochemical performance. Moreover, SiC@C also shows to be a promising scaffold in supporting Si thin film electrode in achieving stable cycling performance in lithium ion batteries. - Highlights: • SiC@C bent nanorods were synthesized with a magnesium reaction approach. • Carbon nanorod spines studded with ultrafine β-SiC nanocrystallines was realized. • The synthesized SiC@C keeps the original rod-like structure of polysilsesquioxanes. • The possible formation process for the nanocomposites was analysed and proposed. • Si@SiC@C nanocomposites reveal good electrochemical performance in LIBs.

  1. Immobilization of functional oxide nanoparticles on silicon surfaces via Si-C bonded polymer brushes.

    Science.gov (United States)

    Xu, F J; Wuang, S C; Zong, B Y; Kang, E T; Neoh, K G

    2006-05-01

    A method for immobilizing and mediating the spatial distribution of functional oxide (such as SiO2 and Fe3O4) nanoparticles (NPs) on (100)-oriented single crystal silicon surface, via Si-C bonded poly(3-(trimethoxysilyl)propyl methacrylate) (P(TMSPM)) brushes from surface-initiated atom transfer radical polymerization (ATRP) of (3-(trimethoxysilyl)propyl methacrylate) (TMSPM), was described. The ATRP initiator was covalently immobilized via UV-induced hydrosilylation of 4-vinylbenzyl chloride (VBC) with the hydrogen-terminated Si(100) surface (Si-H surface). The surface-immobilized Fe3O4 NPs retained their superparamagnetic characteristics and their magnetization intensity could be mediated by adjusting the thickness of the P(TMSPM) brushes.

  2. Propiedades mecánicas de SiC biomórfico poroso

    Directory of Open Access Journals (Sweden)

    López Robledo, M. J.

    2005-10-01

    Full Text Available Biomorphic SiC (bioSiC materials fabricated by silicon infiltration of chescoal preforms have been studied. As a result of this process, a porous SiC ceramics with remnant silicon partially filling pores is obtained. This remnant silicon can considerably alter the mechanical properties of the bioSiC but it can be effectively removed by reaction with a mixture of HF and HNO3 producing a clean pororus bioSiC. In this work the comparison of the mechanical properties of bioSiC from preforms of beech, eucalyptus and pine, with and without remanent silicon is studied. High temperature mechanical properties were studied from deformation tests in compression at constant strain rate. Microstructural characterization of the samples, before and after the mechanical tests, was performed by scanning electron microscopy (SEM.

    Se han estudiado carburos de silicio biomórficos (bioSiC fabricados mediante infiltración reactiva de silicio líquido en una preforma de carbón de origen vegetal. Se obtiene así una cerámica porosa de SiC con silicio remanente en sus poros. Este silicio puede alterar considerablemente las propiedades mecánicas de los bioSiC. Este trabajo preliminar se centra en el estudio de las propiedades mecánicas de los bioSiC fabricados a partir de preformas de haya, eucalipto y pino, tras reacción con una disolución de HF y HNO3 que elimina ostensiblemente el silicio residual. Las propiedades mecánicas a altas temperaturas fueron estudiadas a partir de ensayos de compresión a velocidad de deformación constante. La caracterización microestructural del material resultante, antes y después de los ensayos mecánicos, fue realizada mediante Microscopía Electrónica de Barrido (MEB.

  3. Phase Analysis of Laser Direct Etching and Water Assisted Laser Combined Etching of SiC Ceramics

    Science.gov (United States)

    Yuan, Genfu; Cong, Qidong; Zhang, Chen; Xie, Bingbing

    2017-11-01

    In this study, to discover the etching mechanism of SiC ceramics under laser direct etching and water-jet assisted laser combined etching, the phenomena of substance change on the etched surface were investigated. Also, the rules of substance transfer in etching are discussed. The elemental content change and the phase change of the etching products on the etched surface were analyzed by energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD), respectively. These studies showed a high amount of carbon black on the etched surface, because of the decomposition of SiC ceramics under the high-power-density laser irradiation. SiC decomposed to Si under the laser irradiation, and the subsequent chemical reaction of Si and O2 easily produced SiO2. The SiO2 on the etched surface melted and vaporized, whereas most of SiO2 was removed through splashing, changing the chemical composition of the etched surface. Following the water jet introduction, an increased amount of O existed on the combined etching surface, because the chemical reaction of SiC and H2O easily produced SiO2 under the high-power-density laser irradiation.

  4. Phase Analysis of Laser Direct Etching and Water Assisted Laser Combined Etching of SiC Ceramics

    Science.gov (United States)

    Yuan, Genfu; Cong, Qidong; Zhang, Chen; Xie, Bingbing

    2017-12-01

    In this study, to discover the etching mechanism of SiC ceramics under laser direct etching and water-jet assisted laser combined etching, the phenomena of substance change on the etched surface were investigated. Also, the rules of substance transfer in etching are discussed. The elemental content change and the phase change of the etching products on the etched surface were analyzed by energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD), respectively. These studies showed a high amount of carbon black on the etched surface, because of the decomposition of SiC ceramics under the high-power-density laser irradiation. SiC decomposed to Si under the laser irradiation, and the subsequent chemical reaction of Si and O2 easily produced SiO2. The SiO2 on the etched surface melted and vaporized, whereas most of SiO2 was removed through splashing, changing the chemical composition of the etched surface. Following the water jet introduction, an increased amount of O existed on the combined etching surface, because the chemical reaction of SiC and H2O easily produced SiO2 under the high-power-density laser irradiation.

  5. Deposition of low stress, high transmittance SiC as an x-ray mask membrane using ECR plasma CVD

    CERN Document Server

    Lee, S Y; Lim, S T; Ahn, J H

    1998-01-01

    SiC for x-ray mask membrane is deposited by Electron Cyclotron Resonance plasma Chemical Vapor Deposition from SiH sub 4 /CH sub 4 Ar mixtures. Stoichiometric SiC is deposited at SiH sub 4 /CH sub 4 ratio of 0.4, deposition temperature of 600.deg.C and microwave power of 500 W with +- 5% thickness uniformity, As-deposited film has compressive residual stress, very smooth surface (31 A rms) and high optical transmittance of 90% at 633 nm wavelength. The microstructure of this film consists of the nanocrystalline particle (100 A approx 200A) embedded in amorphous matrix. Residual stress can be turned to tensile stress via Rapid Thermal Annealing in N sub 2 atmosphere, while suppressing structural change during annealing, As a result, smooth (37 A rms) SiC film with moderate tensile stress and high optical transmittance (85% at 633 nm wavelength) is obtained.

  6. Estudio de la reactividad entre aleaciones de aluminio y partículas de SiC

    Directory of Open Access Journals (Sweden)

    Ureña, A.

    2000-04-01

    Full Text Available The SiC reinforcement particles react with the molten aluminium to form Al4C3 that is brittle and sensitive to the the humidity. This reaction degrades the properties of the SiC reinforced aluminium matrix composites. The extend of the reaction in the Al/SiC interface depends on the fabrication parameters such as the temperature, residence time, atmosphere and chemical composition of the aluminium matrix and the reinforcement. Systematic studies on the reactivity between the SiC particles and molten aluminium alloys have been performed, analysing the effect of the presence of a SiO2 layer, which was formed by oxidation on the ceramic particles before their incorporation into the melt, as a protective barrier for preventing the attack of the SiC. As well, the effect of the metal matrix composition on the interfacial reactivity has been studied employing different aluminium alloys: AA1070 (99,7% Al, A-319.0 (Al-6Si-3Cu and A-332.0 (Al-11Si-1,5Cu. The composites were prepared by mixture of SiC particles (30 % vol. %, cold pressure and fusion at 900 ºC, varying the residence time in the furnace, which simulated a cast fabrication process. The results are compared with those obtained for a metal matrix composite (AA2014/SiC/13p.

    Las partículas de refuerzo de SiC reaccionan con el aluminio fundido y forman Al4C3 que es frágil y sensible al contacto con la humedad, lo que degrada las propiedades de los materiales compuestos constituidos por ambos componentes. La reacción en la intercara Al/SiC depende de varios parámetros de fabricación como temperatura, tiempo de residencia, atmósfera y composición química, tanto de la matriz de aluminio como del refuerzo de SiC. Se han realizado estudios sistemáticos de reactividad entre partículas de SiC y aluminio fundido, analizando el efecto que tiene la formación de una capa de SiO2 por oxidación de las partículas cerámicas, antes de su incorporación en el fundido, como barrera protectora

  7. Study of defects in radiation tolerant semiconductor SiC

    Energy Technology Data Exchange (ETDEWEB)

    Itoh, Hisayoshi; Kawasuso, Atsuo; Ohshima, Takeshi; Yoshikawa, Masahito; Nashiyama, Isamu [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Okumura, Hajime; Yoshida, Sadafumi

    1997-03-01

    Electron spin resonance (ESR) was used to study defects introduced in n-type 6H-SiC by 3 MeV electron irradiation. Two ESR signals labeled A and B related to radiation induced defects were observed. An ESR signal B can be explained by a fine interaction with an effective spin S=1. The g and D tensors of the signal B were found to be axially symmetric along the c-axis. The principal values of the g were obtained to be g parallel = 2.003 and g perpendicular = 2.008, and the absolute value of the D was 3.96x10{sup -2} cm{sup -1} at 100 K for this signal. It was also found that the value |D| decreased with increasing temperature. Isochronal annealing showed that the A and B centers have annealing stages of {approx_equal}200degC and {approx_equal}800degC, respectively. Tentative structural models are discussed for these ESR centers. (author)

  8. The Influence of Coating Oxide Metal on Surface of SiC Particles to Elastic Modulus of Al/SiC Composites

    Directory of Open Access Journals (Sweden)

    Dedi Priadi

    2008-11-01

    Full Text Available The isotropic composites of Al/SiC is made by powder metallurgy method, the quality of mechanical materials depend on interfacial bonding between matrix (Al and reinforcement (SiC. The quality of interfacial bonding can influence to elastic modulus of composites which is made by solid process. SiC particles were coated by metal oxide aim to enhance quality interfacial bonding between matrix and reinforcement. These research using three kinds of coating materials, which are Mg oxide, Cu oxide and Al oxide, and these materials were deposited on surface of SiC particles. From three kinds of materials coating Al2O3 is the best to enhance quality interfacial bonding between matrix and reinforce than the others as CuO or MgO. There is Intermetalic phase formatted on CuO coating, and MgO coating have many porous where they can make decrease quality of Al-SiC composites. All of volume fraction of SiC on the Al/SiC composites, which oxide aluminum coating on SiC surface have highest value of elastic modulus than the others metal oxides.

  9. Report on status of execution of SiC step document

    Energy Technology Data Exchange (ETDEWEB)

    Katoh, Yutai [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Terrani, Kurt A. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2015-02-01

    Advanced fuel claddings made entirely or mainly of silicon carbide (SiC) ceramics and/or composites are considered very attractive elements of the accident-tolerant fuels for the light water reactors. In order to translate the promise of SiC composite materials into a reliable fuel cladding, a coordinated program of component level design and materials development must be carried out with many key feasibility issues addressed a-priori to inform the process. With the primary objective of developing a draft blueprint of a technical program that addresses the critical feasibility issues; assesses design and performance issues related with manufacturing, operating, and off-normal events; and advances the technological readiness levels in essential technology elements, a draft plan for the Systematic Technology Evaluation Program for SiC/SiC Composite Accident-Tolerant LWR Fuel Cladding and Core Structures was developed in the FY-14 Advanced Fuels Campaign of the U.S. Department of Energy’s Fuel Cycles Research and Development Program. This document summarizes the status of execution of the technical plan within the activities at the Oak Ridge National Laboratory.

  10. Rapid thermal chemical vapor deposition growth of nanometer-thin SiC on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Steckl, A.J.; Li, J.P. (Univ. of Cincinnati, OH (United States))

    1992-08-28

    Rapid thermal chemical vapor deposition growth of [beta]-SiC ultrathin films on Si (100) was achieved using the carbonization reaction of the silicon substrate with C[sub 3]H[sub 8] gas. Growth rates of 0.5-2 nm s[sup -1] have been achieved at 1100-1300degC using C[sub 3]H[sub 8] flow rates of 7-9 standard cm[sup 3] min[sup -1]. X-ray and electron diffraction indicate single-crystal growth. Therefore nanometer-scale SiC films can be grown by controlling the reaction time to a few seconds. The activation energy at atmospheric pressure is 3.12 eV. The growth rate was found to decrease significantly at higher C[sub 3]H[sub 8] flow rates, leading to films of constant thickness beyond a certain critical reaction time. Using this regime of self-limiting growth, SiC films of 3-5 nm have been grown with relatively little sensitivity to the growth time. (orig.).

  11. Preparation and performance of Pt/PTFE/Foam SiC as a hydrophobic catalyst for LPCE

    Energy Technology Data Exchange (ETDEWEB)

    He, Jianchao; Wang, Heyi, E-mail: hywang@caep.cn; Xiao, Chengjian; Li, Jiamao; Chen, Ping; Hou, Jingwei

    2016-12-15

    Highlights: • A new type of foam material, Foam SiC with three-dimensional network structure, was chosen as the carrier of catalyst. • Foam SiC was hydrophobic treated by PTFE, and achieved a good hydrophobic property. • Pt/PTFE/Foam SiC was prepared by impregnation method with Pt-organic solution and gaseous phase reduction method. • The hydrophobic catalysts were packed with Dixon phosphor bronze gauze rings (about 3 mm × 3 mm) in LPCE system to test the catalytic performance. • The effect of different size of the catalyst on LPCE was been tested. - Abstract: Platinum catalysts supported on a composite of polytetrafluoroethylene (PTFE) and Foam SiC (Pt/PTFE/Foam SiC) have been proposed and prepared by an impregnation method. The as-prepared Pt/PTFE/Foam SiC was characterized by compression load testing, dynamic contact angle measurement, SEM, XRD, and TEM. The results show that the catalyst prepared by triple hydrophobic treatment had an initial contact angle of 134.2°, a good compression performance of 3.2 MPa, and platinum nanoparticles of 12.1 nm (average size). The catalytic activity of the catalyst was tested with different packing methods, reaction temperatures, and gas-liquid ratios. An excellent hydrogen isotope exchange performance was observed using a hydrophilic packing material-to-catalyst ratio of 25% and reaction temperature of 80 °C. Pt/PTFE/Foam SiC may be used as a hydrophobic catalyst for a water detritiation system (WDS) via a liquid-phase catalytic exchange process (LPCE).

  12. Etching of hexagonal SiC surfaces in chlorine-containing gas media at ambient pressure

    Science.gov (United States)

    Zinovev, A. V.; Moore, J. F.; Hryn, J.; Pellin, M. J.

    2006-06-01

    The modification of the silicon carbide (4H-SiC) single-crystal surface in a chlorine-containing gas mixture at high temperature (800-1000 °C) and ambient pressure was investigated. The results of silicon carbide chlorination are found to strongly depend on the hexagonal surface orientation. Due to the thermodynamically more favorable reaction of chlorine with silicon rather than carbon, the C-terminated side (0 0 0 1¯) clearly undergoes considerable changes, resulting in coverage by a black-colored carbon film, whereas the Si-side (0 0 0 1) surprisingly remains visually untouched. With using X-ray photoelectron spectroscopy (XPS), angle-resolved XPS and SEM it is shown that this drastic change in behavior is associated with a different structure of oxicarbide/silicate adlayer formed on the C- and Si-terminated sides of silicon carbide surface during experimental pre-treatment and air exposure. The presence of oxygen bridges connecting the silicate adlayer with the bulk SiC in the case of Si-side inhibits the chlorination reaction and makes this surface strongly resistant to chlorine attack. Only some places on the Si-terminated side demonstrate traces of chlorine etching in the form of hexagonal-shaped voids, which are possibly initiated by distortion of the initial crystalline structure by micropipes. In contrast, a thin carbon layer resulted on the C-terminated side as a consequence of the chlorination process. XPS, ARXPS, SEM and Raman spectroscopy study of created film allows us to argue that it consists mainly of sp2-bonded carbon, mostly in the form of nanoscale graphene sheets. The absence of a protective oxygen bridge between the silicate adlayer and the bulk silicon carbide crystal leads to unlimited growth of carbon film on the SiC(0 0 0 1¯) side.

  13. Effect of Steam Activation on Development of Light Weight Biomorphic Porous SiC from Pine Wood Precursor

    Science.gov (United States)

    Manocha, Satish M.; Patel, Hemang; Manocha, L. M.

    2013-02-01

    Biomorphic SiC materials with tailor-made microstructure and properties similar to ceramic materials manufactured by conventional method are a new class of materials derived from natural biopolymeric cellulose templates (wood). Porous silicon carbide (SiC) ceramics with wood-like microstructure have been prepared by carbothermal reduction of charcoal/silica composites at 1300-1600 °C in inert Ar atmosphere. The C/SiO2 composites were fabricated by infiltrating silica sol into porous activated biocarbon template. Silica in the charcoal/silica composite, preferentially in the cellular pores, was found to get transformed in forms of fibers and rods due to shrinkage during drying. The changes in the morphology of resulting porous SiC ceramics after heat treatment to 1600 °C, as well as the conversion mechanism of wood to activated carbon and then to porous SiC ceramic have been investigated using scanning electron microscope, x-ray diffraction, thermogravimetric analysis, and differential scanning calorimetry. Activation of carbon prior to silica infiltration has been found to enhance conversion of charcoal to SiC. The pore structure is found to be uniform in these materials than in those made from as-such charcoal/silica composites. This provides a low-cost and eco-friendly route to advanced ceramic materials, with near-net shape potential.

  14. Effect of reinforcement of AL-6063 with SiC on mechanical behavior and microstructure of metal matrix composites

    Directory of Open Access Journals (Sweden)

    M. K. Aravindan

    2014-03-01

    Full Text Available A phrase heard often in recent years, advanced composite materials like Al/SiC metal matrix composite is gradually becoming very important materials in auto and aerospace industries due to their superior properties. The present study examines the mechanical properties of aluminum (Al-6063/SiC Silicon carbide reinforced particles metal-matrix composites (MMCs by varying weight fractions of SiC. For this (Al-6063/SiC reinforced particles MMCs are fabricated by stir casting method at air atmosphere . The MMCs are prepared in the form of bars with varying the reinforced particles by weight fraction ranging from 2 %, 4 %, 6 %, 8 % and 10 %. The reinforced particles size of SiC is varying between 25-40 microns. The microstructure study shows that the distribution of particles becomes better with increasing weight fraction of SiC. The Mechanical properties like, Ultimate tensile strength (MPa, % Elongation, Hardness (HRB, Yield Strength (N.m are investigated on prepared specimens of MMCs. It was observed that the hardness of the composite is increased gradually from 2-6 % and drastically from 8-10%. The tensile strength and ultimate break load are increased with rising of reinforced weight fraction and the improvement varies between 15.8- 27 % and 2-15 % respectively.

  15. Layer morphology and Al implant profiles after annealing of supersaturated, single-crystalline, amorphous, and nanocrystalline SiC

    Science.gov (United States)

    Heera, V.; Mücklich, A.; Dubois, C.; Voelskow, M.; Skorupa, W.

    2004-09-01

    Al supersaturated SiC layers (5×1020Alcm-3) were produced by multienergy, high-dose ion implantation into 6H- and 4H-SiC. Several implantation schemes with varying implantation sequence and temperature were investigated. In dependence on the implantation conditions damaged single-crystalline, amorphous, or nanocrystalline layers were formed. The layer morphology and Al distribution in the as-implanted state as well as structural changes and related Al redistribution after high-temperature annealing (1500-1700°C) were characterized by cross-sectional transmission electron microscopy, Rutherford backscattering spectrometry in combination with ion channeling, atomic force microscopy, and secondary-ion mass spectrometry. Remarkable Al redistribution effects have been found after annealing of Al supersaturated SiC. During high-temperature annealing Al atoms in excess to the solid solubility (2×1020Alcm-3) tend to precipitate in single-crystalline SiC whereas they diffuse out in amorphous or nanocrystalline SiC. Redistribution of Al with concentration below the solid solubility is governed by transient enhanced diffusion which can be controlled by the annealing scheme. Amorphization of SiC is advantageous in the case of Al doping to levels higher than the solid solubility because it prevents Al precipitation during annealing and helps to form boxlike Al profiles with smooth plateau and abrupt edge.

  16. Functionalized SiC nanocrystals for tuning of optical, thermal, mechanical and electrical properties of polyvinyl alcohol

    DEFF Research Database (Denmark)

    Saini, Isha; Sharma, Annu; Dhiman, Rajnish

    2017-01-01

    Polyvinyl alcohol (PVA)-SiC nanocomposite films were prepared by incorporating functionalized Silicon Carbide (f-SiC) nanocrystals in PVA matrix. Structural characterization of SiC nanocrystals before and after the functionalization was carried out using Fourier transform infrared spectroscopy (F...... mechanism responsible for charge transport in PVA-SiC nanocomposite films was found to be voltage dependent. Schottky mechanism is the dominant conduction mechanism at high voltages whereas Poole Frenkel mechanism dominates at low voltages....

  17. Mechanical properties of SiC composites neutron irradiated under light water reactor relevant temperature and dose conditions

    Science.gov (United States)

    Koyanagi, Takaaki; Katoh, Yutai

    2017-10-01

    Silicon carbide (SiC) fiber-reinforced SiC matrix (SiC/SiC) composites are being actively investigated for use in accident-tolerant core structures of light water reactors (LWRs). Owing to the limited number of irradiation studies previously conducted at LWR-coolant temperature, this study examined SiC/SiC composites following neutron irradiation at 230-340 °C to 2.0 and 11.8 dpa in the High Flux Isotope Reactor. The investigated materials were chemical vapor infiltrated (CVI) SiC/SiC composites with three different reinforcement fibers. The fiber materials were monolayer pyrolytic carbon (PyC) -coated Hi-Nicalon™ Type-S (HNS), Tyranno™ SA3 (SA3), and SCS-Ultra™ (SCS) SiC fibers. The irradiation resistance of these composites was investigated based on flexural behavior, dynamic Young's modulus, swelling, and microstructures. There was no notable mechanical properties degradation of the irradiated HNS and SA3 SiC/SiC composites except for reduction of the Young's moduli by up to 18%. The microstructural stability of these composites supported the absence of degradation. In addition, no progressive swelling from 2.0 to 11.8 dpa was confirmed for these composites. On the other hand, the SCS composite showed significant mechanical degradation associated with cracking within the fiber. This study determined that SiC/SiC composites with HNS or SA3 SiC/SiC fibers, a PyC interphase, and a CVI SiC matrix retain their properties beyond the lifetime dose for LWR fuel cladding at the relevant temperature.

  18. Swelling behaviour and TEM studies of SiC f/SiC composites after fusion relevant helium implantation

    Science.gov (United States)

    Scholz, H. W.; Frias Rebelo, A. J.; Rickerby, D. G.; Krogul, P.; Lee, W. E.; Evans, J. H.; Fenici, P.

    1998-10-01

    Helium implantation was carried out on SiC f/SiC (CVI) composites up to doses of 2500 appm, at temperatures of 1175 ± 50 K. In this paper the swelling behaviour of the implanted bending bars is reported. A significant differential swelling effect after the α-implantation was evidenced by the matrix jutting out with respect to the fibre ends, at the side surfaces of the implanted zone. A similar fibre shrinkage together with slight expansion of the matrix was already reported for neutron irradiated materials. However, after α-implantation this effect is enhanced by an increased swelling of the β-SiC matrix. These data are discussed in relation to microstructural observations by Transmission Electron Microscopy.

  19. Theoretical and experimental investigation of the atomic and electronic structures at the 4 H -SiC(0001 )/SiO2 interface

    Science.gov (United States)

    Ono, Tomoya; Kirkham, Christopher James; Saito, Shoichiro; Oshima, Yoshifumi

    2017-09-01

    Density functional theory calculations are carried out to investigate the atomic and electronic structures of the 4 H -SiC(0001 )/SiO2 interface. We find two characteristic interface atomic structures in scanning transmission electron microscopy images: One is an interface in which the density of atoms at the first interfacial SiC bilayer is greater than that in the SiC substrate, while the other is an interface where the density of atoms at the first interfacial SiC bilayer is lower. Density functional theory calculations reveal that the difference in the scanning transmission electron microscopy images is a reflection of the atomic structures of these two interfaces. In addition, it has been reported that the floating states, which appear at the conduction band edge of a 4 H -SiC(0001 )/SiO2 interface, affect the electronic structure of the interface and cause marked scattering of the electrons flowing along the interface [S. Iwase, C. J. Kirkham, and T. Ono, Phys. Rev. B 95, 041302(R) (2017), 10.1103/PhysRevB.95.041302]. Interestingly, we find that the floating states do not appear at the conduction band edge of one of the two interfaces. These results provide physical insights into understanding and controlling the electronic structure and carrier mobility of electronic devices using wide-band-gap semiconductors.

  20. Development of PSpice modeling platform for 10 kV/100 A SiC MOSFET power module

    DEFF Research Database (Denmark)

    Martins, Joäo Pedro Rodrigues; Nawaz, Muhammad; Ilves, Kalle

    2017-01-01

    This work deals with the implementation and development of a PSpice based modeling platform for 10 kV/100 A SiC MOSFET power modules. The studied SiC MOSFET power module is composed of a total of 9 dies connected in parallel with 10.0 kV blocking voltage capability. The proposed model...... was implemented based on the already established McNutt Hefner model originally developed for discrete single-die based SiC-MOSFETs. The proposed model has been verified both with static and dynamic experimental data and at different temperatures. Moreover, the energy loss assessment has been performed...

  1. Design of a high-performance cascaded boost converter with SiC power devices for photovoltaic applications

    Science.gov (United States)

    Alharbi, Saleh S.; Al-bayati, Ali M. S.; Alharbi, Salah S.; Matin, Mohammad

    2017-08-01

    This paper presents a positive output cascaded boost converter design based on wide bandgap power devices for photovoltaic (PV) applications. The objective is to enhance the converter's performance and efficiency. The converter with SiC MOSFET devices is discussed and compared to a conventional cascaded boost converter based on Silicon (Si) devices. A 205 W cascaded boost converter with an input voltage of 26.6 V and an output voltage of 400 V is simulated to examine the switching behavior and energy loss of each power device. Converter performance with these two power devices is analyzed in terms of total power loss and efficiency at high switching frequencies and loading conditions. SiC power devices in the cascaded converter set-up perform better with minimized switching loss under a wide range of switching frequency conditions. The results show that the cascaded converter with SiC devices significantly reduces total power loss and improves the overall efficiency.

  2. A new type of white light-emitting diode light source basing on fluorescent SiC

    DEFF Research Database (Denmark)

    Ou, Haiyan; Ou, Yiyu; Lu, Weifang

    Most of the commercial white light-emitting diode (LED) light sources are made from phosphor coated blue-emitting gallium nitride (GaN) chips. This type white LED light source always has tradeoff between luminous efficacy and color rendering index (CRI). Furthermore, yellow-emitting phosphor decays...... much faster than the semiconductor chip, so the white color will turn into bluish over the time. This paper will propose a new type white LED light source: using fluorescent silicon carbide (SiC) to take the place of phosphor. This new type LED has the following advantages: a) SiC is a wide bandgap...... semiconductor material , so it is stable; b) Fluorescent SiC has very wide emission spectrum, and it could generate white light with very high CRI; c) It is a better substrate than sapphire for the GaN growth in terms of lattice match and thermal conductivity. This paper will cover: the growth of fluorescent Si...

  3. In Situ Growth of Core-Sheath Heterostructural SiC Nanowire Arrays on Carbon Fibers and Enhanced Electromagnetic Wave Absorption Performance.

    Science.gov (United States)

    Yan, Liwen; Hong, Changqing; Sun, Boqian; Zhao, Guangdong; Cheng, Yehong; Dong, Shun; Zhang, Dongyang; Zhang, Xinghong

    2017-02-22

    Large-scale core-sheath heterostructural SiC nanowires were facilely grown on the surface of carbon fibers using a one-step chemical vapor infiltration process. The as-synthesized SiC nanowires consist of single crystalline SiC cores with a diameter of ∼30 nm and polycrystalline SiC sheaths with an average thickness of ∼60 nm. The formation mechanisms of core-sheath heterostructural SiC nanowires (SiC nws ) were discussed in detail. The SiC nws -CF shows strong electromagnetic (EM) wave absorption performance with a maximum reflection loss value of -45.98 dB at 4.4 GHz. Moreover, being coated with conductive polymer polypyrrole (PPy) by a simple chemical polymerization method, the SiC nws -CF/PPy nanocomposites exhibited superior EM absorption abilities with maximum RL value of -50.19 dB at 14.2 GHz and the effective bandwidth of 6.2 GHz. The SiC nws -CF/PPy nanocomposites in this study are very promising as absorber materials with strong electromagnetic wave absorption performance.

  4. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

    Science.gov (United States)

    Casady, J. B.; Johnson, R. W.

    1996-10-01

    Silicon carbide (SiC), a material long known with potential for high-temperature, high-power, high-frequency, and radiation hardened applications, has emerged as the most mature of the wide-bandgap (2.0 eV ≲ Eg ≲ 7.0 eV) semiconductors since the release of commercial 6HSiC bulk substrates in 1991 and 4HSiC substrates in 1994. Following a brief introduction to SiC material properties, the status of SiC in terms of bulk crystal growth, unit device fabrication processes, device performance, circuits and sensors is discussed. Emphasis is placed upon demonstrated high-temperature applications, such as power transistors and rectifiers, turbine engine combustion monitoring, temperature sensors, analog and digital circuitry, flame detectors, and accelerometers. While individual device performances have been impressive (e.g. 4HSiC MESFETs with fmax of 42 GHz and over 2.8 W mm -1 power density; 4HSiC static induction transistors with 225 W power output at 600 MHz, 47% power added efficiency (PAE), and 200 V forward blocking voltage), material defects in SiC, in particular micropipe defects, remain the primary impediment to wide-spread application in commercial markets. Micropipe defect densities have been reduced from near the 1000 cm -2 order of magnitude in 1992 to 3.5 cm -2 at the research level in 1995.

  5. Hi-Nicalon(trademark)-S SiC Fiber Strength after Low pO2 Oxidation (Preprint)

    Science.gov (United States)

    2017-09-04

    AFRL-RX-WP-JA-2017-0357 HI -NICALONTM-S SIC FIBER STRENGTH AFTER LOW pO2 OXIDATION (PREPRINT) Randall S. Hay AFRL/RX T.A...DD-MM-YY) 2. REPORT TYPE 3. DATES COVERED (From - To) 17 May 2017 Interim 22 July 2013 – 17 April 2017 4. TITLE AND SUBTITLE HI -NICALONTM-S SIC...and has the right to use, modify, reproduce, release, perform, display, or disclose the work. 14. ABSTRACT (Maximum 200 words) Hi -NicalonTM-S SiC

  6. Ceramic Technology Project database: September 1990 summary report. [SiC, SiN, whisker-reinforced SiN, ZrO-toughened aluminas, zirconias, joints

    Energy Technology Data Exchange (ETDEWEB)

    Keyes, B.L.P.

    1992-06-01

    Data generated within the Ceramic Technology Project (CTP) represent a valuable resource for both research and industry. The CTP database was created to provide easy access to this information in electronic and hardcopy forms by using a computerized database and by issuing periodic hardcopy reports on the database contents. This report is the sixth in a series of semiannual database summaries and covers recent additions to the database, including joined brazed specimen test data. It covers 1 SiC, 34 SiN, 10 whisker-reinforced SiN, 2 zirconia-toughened aluminas, 8 zirconias, and 34 joints.

  7. Origin of Dirac Cones in SiC Silagraphene: A Combined Density Functional and Tight-Binding Study.

    Science.gov (United States)

    Qin, Xuming; Liu, Yi; Li, Xiaowu; Xu, Jingcheng; Chi, Baoqian; Zhai, Dong; Zhao, Xinluo

    2015-04-16

    The formation of Dirac cones in electronic band structures via isomorphous transformation is demonstrated in 2D planar SiC sheets. Our combined density functional and tight-binding calculations show that 2D SiC featuring C-C and Si-Si atom pairs possesses Dirac cones (DCs), whereas an alternative arrangement of C and Si leads to a finite band gap. The origin of Dirac points is attributed to bare interactions between Si-Si bonding states (valence bands, VBs) and C-C antibonding states (conduction bands, CBs), while the VB-CB coupling opens up band gaps elsewhere. A mechanism of atom pair coupling is proposed, and the conditions required for DC formation are discussed, enabling one to design a class of 2D binary Dirac fermion systems on the basis of DF calculations solely for pure and alternative binary structures.

  8. Cs diffusion in SiC high-energy grain boundaries

    Science.gov (United States)

    Ko, Hyunseok; Szlufarska, Izabela; Morgan, Dane

    2017-09-01

    Cesium (Cs) is a radioactive fission product whose release is of concern for Tristructural-Isotropic fuel particles. In this work, Cs diffusion through high energy grain boundaries (HEGBs) of cubic-SiC is studied using an ab-initio based kinetic Monte Carlo (kMC) model. The HEGB environment was modeled as an amorphous SiC, and Cs defect energies were calculated using the density functional theory (DFT). From defect energies, it was suggested that the fastest diffusion mechanism is the diffusion of Cs interstitial in an amorphous SiC. The diffusion of Cs interstitial was simulated using a kMC model, based on the site and transition state energies sampled from the DFT. The Cs HEGB diffusion exhibited an Arrhenius type diffusion in the range of 1200-1600 °C. The comparison between HEGB results and the other studies suggests not only that the GB diffusion dominates the bulk diffusion but also that the HEGB is one of the fastest grain boundary paths for the Cs diffusion. The diffusion coefficients in HEGB are clearly a few orders of magnitude lower than the reported diffusion coefficients from in- and out-of-pile samples, suggesting that other contributions are responsible, such as radiation enhanced diffusion.

  9. Reliability Assessment of SiC Power MOSFETs From The End User's Perspective

    DEFF Research Database (Denmark)

    Karaventzas, Vasilios Dimitris; Nawaz, Muhammad; Iannuzzo, Francesco

    2016-01-01

    The reliability of commercial Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is investigated, and comparative assessment is performed under various test environments. The MOSFETs are tested both regarding the electrical properties of the dies and the packaging ...... conditions, such as: high electric field, high temperature and high humidity. Finally, a preliminary judgment is performed on each kind of stress, based on the quality assessment of the semiconductor as well as the packaging material.......The reliability of commercial Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is investigated, and comparative assessment is performed under various test environments. The MOSFETs are tested both regarding the electrical properties of the dies and the packaging...... properties of the devices. The results of each reliability stress are utilized not only for mutual comparison of SiC-based power commercial modules, but also as a tool to understand the underlying physical mechanisms of degradation. Towards this goal, the devices were placed under accelerate stress...

  10. Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices

    Science.gov (United States)

    Neudeck, Philip G.

    1999-01-01

    Commercial epilayers are known to contain a variety of crystallographic imperfections. including micropipes, closed core screw dislocations. low-angle boundaries, basal plane dislocations, heteropolytypic inclusions, and non-ideal surface features like step bunching and pits. This paper reviews the limited present understanding of the operational impact of various crystal defects on SiC electrical devices. Aside from micropipes and triangular inclusions whose densities have been shrinking towards manageably small values in recent years, many of these defects appear to have little adverse operational and/or yield impact on SiC-based sensors, high-frequency RF, and signal conditioning electronics. However high-power switching devices used in power management and distribution circuits have historically (in silicon experience) demanded the highest material quality for prolonged safe operation, and are thus more susceptible to operational reliability problems that arise from electrical property nonuniformities likely to occur at extended crystal defects. A particular emphasis is placed on the impact of closed-core screw dislocations on high-power switching devices, because these difficult to observe defects are present in densities of thousands per cm,in commercial SiC epilayers. and their reduction to acceptable levels seems the most problematic at the present time.

  11. Effects of energetic ion irradiation on WSe2/SiC heterostructures.

    Science.gov (United States)

    Shi, Tan; Walker, Roger C; Jovanovic, Igor; Robinson, Joshua A

    2017-06-23

    The remarkable electronic properties of layered semiconducting transition metal dichalcogenides (TMDs) make them promising candidates for next-generation ultrathin, low-power, high-speed electronics. It has been suggested that electronics based upon ultra-thin TMDs may be appropriate for use in high radiation environments such as space. Here, we present the effects of irradiation by protons, iron, and silver ions at MeV-level energies on a WSe2/6H-SiC vertical heterostructure studied using XPS and UV-Vis-NIR spectroscopy. It was found that with 2 MeV protons, a fluence of 10(16) protons/cm(2) was necessary to induce a significant charge transfer from SiC to WSe2, where a reduction of valence band offset was observed. Simultaneously, a new absorption edge appeared at 1.1 eV below the conduction band of SiC. The irradiation with heavy ions at 10(16) ions/cm(2) converts WSe2 into a mixture of WOx and Se-deficient WSe2. The valence band is also heavily altered due to oxidation and amorphization. However, these doses are in excess of the doses needed to damage TMD-based electronics due to defects generated in common dielectric and substrate materials. As such, the radiation stability of WSe2-based electronics is not expected to be limited by the radiation hardness of WSe2, but rather by the dielectric and substrate.

  12. DISTRIBUTION OF DISLOCATIONS IN AlN CRYSTALS GROWN ON EVAPORATING SiC SUBSTRATES

    Directory of Open Access Journals (Sweden)

    Tatiana S. Argunova

    2016-11-01

    Full Text Available By the use of high-resolution X-ray diffractometry and synchrotron radiation topography, the distribution of dislocations in AlN crystals grown on evaporating SiC substrates is studied. The growth of AlN layer in one process with the evaporation of SiC substrate gave the possibility to prevent the relaxation of thermal stresses through cracking of AlN during cooling the structure. The continuous 0.2-1.5 mm thick plates were used as the model objects for the study of dislocation structure near the AlN/SiC interface. Analysis of the broadening of the Bragg reflection peaks, the shape of scattering maps in reciprocal space and topographs showed that dislocations formed the mosaic structure, different from the distribution of threading dislocations in GaN epilayers. A theoretical model for misfit strain relaxation in the growing AlN layer is suggested. The results enable to clarify the dislocation processes during sublimation growth of industrial quality AlN crystals.

  13. Synthesis, crystal structure, and magnetic properties of novel intermetallic compounds R2Co2SiC (R = Pr, Nd).

    Science.gov (United States)

    Zhou, Sixuan; Mishra, Trinath; Wang, Man; Shatruk, Michael; Cao, Huibo; Latturner, Susan E

    2014-06-16

    The intermetallic compounds R2Co2SiC (R = Pr, Nd) were prepared from the reaction of silicon and carbon in either Pr/Co or Nd/Co eutectic flux. These phases crystallize with a new stuffed variant of the W2CoB2 structure type in orthorhombic space group Immm with unit cell parameters a = 3.978(4) Å, b = 6.094(5) Å, c = 8.903(8) Å (Z = 2; R1 = 0.0302) for Nd2Co2SiC. Silicon, cobalt, and carbon atoms form two-dimensional flat sheets, which are separated by puckered layers of rare-earth cations. Magnetic susceptibility measurements indicate that the rare earth cations in both analogues order ferromagnetically at low temperature (TC ≈ 12 K for Nd2Co2SiC and TC ≈ 20 K for Pr2Co2SiC). Single-crystal neutron diffraction data for Nd2Co2SiC indicate that Nd moments initially align ferromagnetically along the c axis around ∼12 K, but below 11 K, they tilt slightly away from the c axis, in the ac plane. Electronic structure calculations confirm the lack of spin polarization for Co 3d moments.

  14. Formation of SiC nanoparticles in an atmospheric microwave plasma

    Directory of Open Access Journals (Sweden)

    Martin Vennekamp

    2011-10-01

    Full Text Available We describe the formation of SiC nanopowder using an atmospheric argon microwave plasma with tetramethylsilane (TMS as precursor. The impact of several process conditions on the particle size of the product is experimentally investigated. Particles with sizes ranging from 7 nm to about 20 nm according to BET and XRD measurements are produced. The dependency of the particle size on the process parameters is evaluated statistically and explained with growth-rate equations derived from the theory of Ostwald ripening. The results show that the particle size is mainly influenced by the concentration of the precursor material in the plasma.

  15. Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes

    Science.gov (United States)

    Abbate, C.; Busatto, G.; Cova, P.; Delmonte, N.; Giuliani, F.; Iannuzzo, F.; Sanseverino, A.; Velardi, F.

    2015-02-01

    A study is presented aimed at describing phenomena involved in Single Event Burnout induced by heavy ion irradiation in SiC Schottky diodes. On the basis of experimental data obtained for 79Br irradiation at different energies, electro-thermal FEM is used to demonstrate that the failure is caused by a strong local increase of the semiconductor temperature. With respect to previous studies the temperature dependent thermal material properties were added. The critical ion energy calculated by this model is in agreement with literature experimental results. The substrate doping dependence of the SEE robustness was analyzed, proving the effectiveness of the developed model for device technological improvements.

  16. Fabrication of SiC particulate reinforced polyester matrix composite and investigation

    Science.gov (United States)

    Selvam, R.; Ravi, S.; Raja, R.

    2017-05-01

    Polymer composite provokes a new alternative material to engineering and domestic application. Polymeric nano composite have been intensively investigated due to the performance improvement when a small amount of nano sized particulates are added to matrix. The distinguished properties of SiC particulates influence to make a polymeric composite. This composite material has many application such as mechanical, automobile, marine, appliances and packaging. The composite material is fabricated in deferent weight ratio and it is characterized to understand the mechanical behavior, which was studied by various testing method under external load.

  17. Continuous Fabrication of SiC Fiber Tows by Chemical Vapor Deposition

    Science.gov (United States)

    1993-01-01

    Niobium Carbonitride Films on Carbon Fibers," pp. 300-14 in Proceedings on the Seventh International Conference on Chemical Vapor Deposition, The...34Modeling of the Chemical Vapor Deposition of YI3a 2Cu30z, TiB•, and SiC Thin Films Onto Continuous Ceramic Tows," Ph.D. Dissertation, School of...SUJRJ Ct 7URM’S 15. NUMBER OF PAGES 98 Fibers, Silicon (Carbide. Chemical Vapor Deposition 16. PRICE CODE F SFSCURV C’A1 ’,’-,(AH.T,.)I•sJ $ ,,ui T 7

  18. An in-situ TEM investigation of He bubble evolution in SiC

    OpenAIRE

    Pawley, C J; Beaufort, M.F.; Oliviero, E.; Hinks, J. A.; Barbot, J F; Donnelly, S. E.

    2012-01-01

    This paper presents work using the capabilities of two TEM with in-situ ion\\ud irradiation facilities: Microscope and Ion Accelerator for Materials Investigation (MIAMI) at\\ud the University of Huddersfield and Joint Accelerators for Nano-science and Nuclear\\ud Simulation JANNuS at Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse\\ud (CSNSM), Orsay, France, to study the nucleation and growth of He bubbles in silicon carbide\\ud (SiC) and to carry out an investigation into bubble b...

  19. Identification of sigma and OMEGA phases in AA2009/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Rodrigo, P., E-mail: pilar.rodrigo@urjc.e [Departamento de Ciencia e Ingenieria de Materiales, Escuela Superior de Ciencias Experimentales y Tecnologia, Universidad Rey Juan Carlos, c/Tulipan s/n, 28933 Mostoles, Madrid (Spain); Poza, P.; Utrilla, M.V.; Urena, A. [Departamento de Ciencia e Ingenieria de Materiales, Escuela Superior de Ciencias Experimentales y Tecnologia, Universidad Rey Juan Carlos, c/Tulipan s/n, 28933 Mostoles, Madrid (Spain)

    2009-08-12

    The microstructure evolution during ageing treatment at 170 and 190 deg. C of AA2009/SiC composites, reinforced with 15 vol.% particulates and whiskers, was studied by transmission electron microscopy. Besides theta' and S' phases, the typical hardening precipitates on Al-Cu-Mg alloys, it was found the presence of OMEGA and sigma (Al{sub 5}Cu{sub 6}Mg{sub 2}) phases in the matrix. sigma phase was only found in the matrix of particulate composite, while OMEGA phase appeared in both. This phase has not been previously observed in Al matrix composites based on conventional Al-Cu-Mg alloys.

  20. Structure of MMCs with SiC Particles after Gas-tungsten Arc Welding

    Directory of Open Access Journals (Sweden)

    Przełożyńska E.

    2015-12-01

    Full Text Available The gas-tungsten arc (GTA welding behaviors of a magnesium matrix composite reinforced with SiC particles were examined in terms of microstructure characteristics and process efficiencies. This study focused on the effects of the GTAW process parameters (like welding current in the range of 100/200 A on the size of the fusion zone (FZ. The analyses revealed the strong influence of the GTA welding process on the width and depth of the fusion zone and also on the refinement of the microstructure in the fusion zone. Additionally, the results of dendrite arm size (DAS measurements were presented.

  1. On the short-circuit and avalanche ruggedness reliability assessment of SiC MOSFET modules

    DEFF Research Database (Denmark)

    Ionita, Claudiu; Nawaz, Muhammad; Ilves, Kalle

    2017-01-01

    This paper provides an insight into the operational robustness of commercially available SiC MOSFET power modules, during short-circuit (SC) and unclamped inductive switching (UIS) test environments. A set of five different power modules from three vendors rated from 1.2–1.7 kV and with various...... failed. The failure of the modules was always caused by the external diode connected in parallel with the MOSFETs. One of the modules from the same vendor which does not have external diode and another module from a different vendor with external diode survived the UIS tests under nominal test conditions....

  2. Microstructural and strength stability of CVD SiC fibers in argon environment

    Science.gov (United States)

    Bhatt, Ramakrishna T.; Hull, David R.

    1991-01-01

    The room temperature tensile strength and microstructure of three types of commercially available chemically vapor deposited silicon carbide fibers were measured after 1, 10, and 100 hour heat treatments under argon pressures of 0.1 to 310 MPa at temperatures to 2100 C. Two types of fiber had carbon-rich surface coatings and the other contained no coating. All three fiber types showed strength degradation beyond 1400 C. Time and temperature of exposure had greater influence on strength degradation than argon pressure. Recrystallization and growth of near stoichiometric SiC grains appears to be the dominant mechanism for the strength degradation.

  3. Microstructural and strength stability of CVD SiC fibers in argon environments

    Science.gov (United States)

    Bhatt, Ramakrishna T.; Hull, David R.

    1991-01-01

    The room temperature tensile strength and microstructure of three types of commercially available chemically vapor deposited silicon carbide fibers were measured after 1, 10, and 100 hour heat treatments under argon pressures of 0.1 to 310 MPa at temperatures to 2100 C. Two types of fiber had carbon-rich surface coatings and the other contained no coating. All three fiber types showed strength degradation beyond 1400 C. Time and temperature of exposure had greater influence on strength degradation than argon pressure. Recrystallization and growth of near stoichiometric SiC grains appears to be the dominant mechanism for the strength degradation.

  4. Wetting and adhesion in metal-silicon carbide systems: The effect of surface polarity of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Rado, C.; Kalogeropoulou, S.; Eustathopoulos, N.

    1999-12-31

    Crystallographic polarity is an important feature of surfaces of both hexagonal ({alpha}) and cubic ({beta}) SiC. The structure of {alpha}-SiC perpendicular to the <0001> axis (a similar description holds for the (111) surface of {Beta}-SiC) consists of hexagonal double layers, each sub-layer being occupied by only one type of atom, Si or C. Consequently in the same crystal two polar surfaces of different chemical nature exist: the ideal (0001) and (000{bar 1}) polar faces which are terminated with a layer of Si and C atoms respectively. (0001)-Si and (000{bar 1})-C surfaces have different oxidation rates, and electronic properties, different nucleation rates when grown from the vapor phase and different behavior in chemical etching. The last difference is often employed to distinguish the polar faces. Given the major benefits of SiC as a semiconductor compound, numerous experimental and theoretical studies over the past fifteen years have been devoted to the atomic and electronic structure of SiC polar faces. In this study, the wetting of the two polar faces of {alpha}-SiC by non reactive metallic melts (molten Si and two metal-silicon alloys) is investigated by the sessile drop technique in order to measure the contact angle {theta} of a liquid drop on a flat substrate. The results are used to discuss the nature of predominant alloy-SiC interfacial interactions.

  5. Nanocrystalline SiC and Ti3SiC2 Alloys for Reactor Materials: Thermal and Mechanical Properties

    Energy Technology Data Exchange (ETDEWEB)

    Henager, Charles H. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Alvine, Kyle J. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Roosendaal, Timothy J. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Shin, Yongsoon [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Nguyen, Ba Nghiep [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Borlaug, Brennan A. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Jiang, Weilin [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

    2014-04-01

    SiC-polymers (pure polycarbosilane and polycarbosilane filled with SiC-particles) are being combined with Si and TiC powders to create a new class of polymer-derived ceramics for consideration as advanced nuclear materials in a variety of applications. Compared to pure SiC these materials have increased fracture toughness with only slightly reduced thermal conductivity. Future work with carbon nanotube (CNT) mats will be introduced with the potential to increase the thermal conductivity and the fracture toughness. At present, this report documents the fabrication of a new class of monolithic polymer derived ceramics, SiC + SiC/Ti3SiC2 dual phase materials. The fracture toughness of the dual phase material was measured to be significantly greater than Hexoloy SiC using indentation fracture toughness testing. However, thermal conductivity of the dual phase material was reduced compared to Hexoloy SiC, but was still appreciable, with conductivities in the range of 40 to 60 W/(m K). This report includes synthesis details, optical and scanning electron microscopy images, compositional data, fracture toughness, and thermal conductivity data.

  6. The oxidation behavior of SiC sintered with Al-B-C and improved oxidation resistance via heat treatments

    Energy Technology Data Exchange (ETDEWEB)

    Sixta, Mark [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering

    1997-12-01

    The oxidation behavior of high strength and high toughness SiC, sintered with Al, B, and C (ABC-SiC), was examined. Kinetic data were acquired and the parabolic rate constant for oxidation was determined and compared with literature data on various SiC materials. The role of secondary phases on the oxide morphology was explored. ABC-SiC was compared to commercially available SiC, Hexoloy, and SiC sintered with 10% yttrium aluminum garnet (YAG). Two-step sintering (pre-coarsening) was employed with holds for 48 hours at 600-1,600°C, prior to the typical hot-pressing conditions of 1,900°C for 1 hour, to change the chemistry and reduce the number of bubbles in the silica scale. The effects on the oxide thickness and integrity was examined as a function of the precoarsening heat treatment temperature. Additionally, the hot-pressed ABC-SiC was subjected to heat treatments (anneals) at 1,800°C for 1 hour in nitrogen, Ar, and vacuum environments, and the effects on subsequent oxidation were evaluated. The Ar and vacuum heat treatments dramatically improved the oxidation resistance of ABC-SiC. Finally, reoxidation experiments were performed to try to alter the surface chemistry of the SiC to improve the oxidation resistance. The four-point bend strengths and two-parameter Weibull plots of the most successful heat treatments were compared with the standard ABC-SiC to ensure that significant degradation did not result from altering the processing of the material.

  7. Nanocrystalline SiC and Ti3SiC2 Alloys for Reactor Materials: Annual Report

    Energy Technology Data Exchange (ETDEWEB)

    Henager, Charles H. [pnnl; Alvine, Kyle J. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Roosendaal, Timothy J. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Shin, Yongsoon [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Nguyen, Ba Nghiep; Borlaug, Brennan A. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Jiang, Weilin [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Arreguin, Shelly A. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

    2015-01-15

    A new dual-phase nanocomposite of Ti₃SiC₂/SiC is being synthesized using preceramic polymers, ceramic powders, and carbon nanotubes (CNTs) designed to be suitable for advanced nuclear reactors and perhaps as fuel cladding. The material is being designed to have superior fracture toughness compared to SiC, adequate thermal conductivity, and higher density than SiC/SiC composites. This annual report summarizes the progress towards this goal and reports progress in understanding certain aspects of the material behavior but some shortcomings in achieving full density or in achieving adequate incorporation of CNTs. The measured thermal conductivity is adequate and falls into an expected range based on SiC and Ti₃SiC₂. Part of this study makes an initial assessment for Ti₃SiC₂ as a barrier to fission product transport. Ion implantation was used to introduce fission product surrogates (Ag and Cs) and a noble metal (Au) in Ti₃SiC₂, SiC, and a synthesized at PNNL. The experimental results indicate that the implanted Ag in SiC is immobile up to the highest temperature (1273 K) applied in this study; in contrast, significant out-diffusion of both Ag and Au in MAX phase Ti₃SiC₂ occurs during ion implantation at 873 K. Cs in Ti₃SiC₂ is found to diffuse during post-irradiation annealing at 973 K, and noticeable Cs release from the sample is observed. This study may suggest caution in using Ti₃SiC₂ as a fuel cladding material for advanced nuclear reactors operating at very high temperatures. Progress is reported in thermal conductivity modeling of SiC-based materials that is relevant to this research, as is progress in modeling the effects of CNTs on fracture strength of SiC-based materials.

  8. Quantitative Analysis of Efficiency Improvement of a Propulsion Drive by Using SiC Devices: A Case of Study

    Directory of Open Access Journals (Sweden)

    Kundan Kumar

    2017-01-01

    Full Text Available One of the emerging research topics in the propulsion drive of the electric vehicles is the improvement in the efficiency of its component parts, namely, the propulsion motor and the associated inverter. This paper is focused on the efficiency of the inverter and analyzes the improvement that follows from the replacement of the silicon (Si IGBT devices with silicon carbide (SiC MOSFETs. To this end, the paper starts by deriving the voltage-current solicitations of the inverter over the working torque-speed plane of the propulsion motor. Then, a proper model of the power losses in the inverter over a supply period of the motor is formulated for the two types of device, including the integrated freewheeling diode. By putting together the voltage-current solicitations and the device power losses, the efficiency maps of the Si IGBT and SiC MOSFET inverters are calculated and compared over the torque-speed plane. The results for the Si IGBT inverter are supported by measurements executed on a marketed C-segment compact electric car, while the SiC MOSFET loss model is validated by an on-purpose built test bench. Finally, the overall efficiency of the propulsion drive is calculated by accounting for the motor efficiency. Main outcomes of the paper is a quantitative evaluation of both the improvement in the efficiency achievable with the SiC MOSFETs and the ensuing increase in the electric car range.

  9. Effect of SiC Nanowhisker on the Microstructure and Mechanical Properties of WC-Ni Cemented Carbide Prepared by Spark Plasma Sintering

    Directory of Open Access Journals (Sweden)

    Xiaoyong Ren

    2014-01-01

    Full Text Available Ultrafine tungsten carbide-nickel (WC-Ni cemented carbides with varied fractions of silicon carbide (SiC nanowhisker (0–3.75 wt.% were fabricated by spark plasma sintering at 1350°C under a uniaxial pressure of 50 MPa with the assistance of vanadium carbide (VC and tantalum carbide (TaC as WC grain growth inhibitors. The effects of SiC nanowhisker on the microstructure and mechanical properties of the as-prepared WC-Ni cemented carbides were investigated. X-ray diffraction analysis revealed that during spark plasma sintering (SPS Ni may react with the applied SiC nanowhisker, forming Ni2Si and graphite. Scanning electron microscopy examination indicated that, with the addition of SiC nanowhisker, the average WC grain size decreased from 400 to 350 nm. However, with the additional fractions of SiC nanowhisker, more and more Si-rich aggregates appeared. With the increase in the added fraction of SiC nanowhisker, the Vickers hardness of the samples initially increased and then decreased, reaching its maximum of about 24.9 GPa when 0.75 wt.% SiC nanowhisker was added. However, the flexural strength of the sample gradually decreased with increasing addition fraction of SiC nanowhisker.

  10. Wetting and reaction characteristics of crystalline and amorphous SiO2 derived rice-husk ash and SiO2/SiC substrates with Al-Si-Mg alloys

    Science.gov (United States)

    Bahrami, A.; Pech-Canul, M. I.; Gutiérrez, C. A.; Soltani, N.

    2015-12-01

    A study of the wetting behavior of three substrate types (SiC, SiO2-derived RHA and SiC/SiO2-derived RHA) by two Al-Si-Mg alloys using the sessile drop method has been conducted, using amorphous and crystalline SiO2 in the experiment. Mostly, there is a transition from non-wetting to wetting contact angles, being the lowest θ values achieved with the alloy of high Mg content in contact with amorphous SiO2. The observed wetting behavior is attributed to the deposited Mg on the substrates. A strong diffusion of Si from the SiC/Amorphous RHA substrate into the metal drop explains the free Si segregated at the drop/substrate interface and drop surface. Although incorporation of both SiO2-derived RHA structures into the SiC powder compact substrates increases the contact angles in comparison with the SiC substrate alone, the still observed acute contact angles in RHA/SiC substrates make them promising for fabrication of composites with high volume fraction of reinforcement by the pressureless infiltration technique. The observed wetting characteristics, with decrease in surface tension and contact angles is explained by surface related phenomena. Based on contact angle changes, drop dimensions and surface tension values, as well as on the interfacial elemental mapping, and XRD analysis of substrates, some wetting and reaction pathways are proposed and discussed.

  11. Computational insights and the observation of SiC nanograin assembly: towards 2D silicon carbide.

    Science.gov (United States)

    Susi, Toma; Skákalová, Viera; Mittelberger, Andreas; Kotrusz, Peter; Hulman, Martin; Pennycook, Timothy J; Mangler, Clemens; Kotakoski, Jani; Meyer, Jannik C

    2017-06-30

    While an increasing number of two-dimensional (2D) materials, including graphene and silicene, have already been realized, others have only been predicted. An interesting example is the two-dimensional form of silicon carbide (2D-SiC). Here, we present an observation of atomically thin and hexagonally bonded nanosized grains of SiC assembling temporarily in graphene oxide pores during an atomic resolution scanning transmission electron microscopy experiment. Even though these small grains do not fully represent the bulk crystal, simulations indicate that their electronic structure already approaches that of 2D-SiC. This is predicted to be flat, but some doubts have remained regarding the preference of Si for sp 3 hybridization. Exploring a number of corrugated morphologies, we find completely flat 2D-SiC to have the lowest energy. We further compute its phonon dispersion, with a Raman-active transverse optical mode, and estimate the core level binding energies. Finally, we study the chemical reactivity of 2D-SiC, suggesting it is like silicene unstable against molecular absorption or interlayer linking. Nonetheless, it can form stable van der Waals-bonded bilayers with either graphene or hexagonal boron nitride, promising to further enrich the family of two-dimensional materials once bulk synthesis is achieved.

  12. Spin polarization induced by optical and microwave resonance radiation in a Si Vacancy in SiC: a promising subject for the spectroscopy of single defects

    NARCIS (Netherlands)

    Baranov, P.G.; Bundakova, A.P.; Borovykh, I.V.; Orlinskii, S.B.; Zondervan, R.; Schmidt, J.

    2007-01-01

    Depending on the temperature, crystal polytype, and crystal position, two opposite schemes have been observed for the optical alignment of the populations of spin sublevels in the ground state of a Si vacancy in SiC upon irradiation with unpolarized light at frequencies of zero-phonon lines. A giant

  13. Investigation of Embedded Si/C System Exposed to a Hybrid Reaction of Centrifugal-Assisted Thermite Method.

    Science.gov (United States)

    Mahmoodian, Reza; Yahya, Rosiyah; Dabbagh, Ali; Hamdi, Mohd; Hassan, Mohsen A

    2015-01-01

    A novel method is proposed to study the behavior and phase formation of a Si+C compacted pellet under centrifugal acceleration in a hybrid reaction. Si+C as elemental mixture in the form of a pellet is embedded in a centrifugal tube. The pellet assembly and tube are exposed to the sudden thermal energy of a thermite reaction resulted in a hybrid reaction. The hybrid reaction of thermite and Si+C produced unique phases. X-ray diffraction pattern (XRD) as well as microstructural and elemental analyses are then investigated. XRD pattern showed formation of materials with possible electronic and magnetic properties. The cooling rate and the molten particle viscosity mathematical model of the process are meant to assist in understanding the physical and chemical phenomena took place during and after reaction. The results analysis revealed that up to 85% of materials converted into secondary products as ceramics-matrix composite.

  14. Investigation of Embedded Si/C System Exposed to a Hybrid Reaction of Centrifugal-Assisted Thermite Method.

    Directory of Open Access Journals (Sweden)

    Reza Mahmoodian

    Full Text Available A novel method is proposed to study the behavior and phase formation of a Si+C compacted pellet under centrifugal acceleration in a hybrid reaction. Si+C as elemental mixture in the form of a pellet is embedded in a centrifugal tube. The pellet assembly and tube are exposed to the sudden thermal energy of a thermite reaction resulted in a hybrid reaction. The hybrid reaction of thermite and Si+C produced unique phases. X-ray diffraction pattern (XRD as well as microstructural and elemental analyses are then investigated. XRD pattern showed formation of materials with possible electronic and magnetic properties. The cooling rate and the molten particle viscosity mathematical model of the process are meant to assist in understanding the physical and chemical phenomena took place during and after reaction. The results analysis revealed that up to 85% of materials converted into secondary products as ceramics-matrix composite.

  15. Oxygen reduction and methanol oxidation behaviour of SiC based Pt nanocatalysts for proton exchange membrane fuel cells

    DEFF Research Database (Denmark)

    Dhiman, Rajnish; Stamatin, Serban Nicolae; Andersen, Shuang Ma

    2013-01-01

    Research with proton exchange membrane fuel cells has demonstrated their important potential as providers of clean energy. The commercialization of this type of fuel cell needs a breakthrough in electrocatalyst technology to reduce the relatively large amount of noble metal platinum used...... with the present carbon based substrates. We have recently examined suitably sized silicon carbide (SiC) particles as catalyst supports for fuel cells based on the stable chemical and mechanical properties of this material. In the present study, we have continued our work with studies of the oxygen reduction...... and methanol oxidation reactions of SiC supported catalysts and measured them against commercially available carbon based catalysts. The deconvolution of the hydrogen desorption signals in CV cycles shows a higher contribution of Pt (110) & Pt (111) peaks compared to Pt (100) for SiC based supports than...

  16. Studies on the Codeposition of SiC Nanopowder with Nickel, Cobalt, and Co-Ni Alloys

    Directory of Open Access Journals (Sweden)

    Ewa Rudnik

    2014-01-01

    Full Text Available Electrodeposition of SiC nanopowder (approximately 120 nm with nickel, cobalt, and Co-Ni alloy matrix was studied. It was found that particles suspended in the bath affect slightly the reduction of metallic ions. Incorporation of the ceramic particles was governed mainly by the morphology of the matrix surface, while no strict correlation between the amount of cobalt ions adsorbed on the powder and the SiC content in the composites was found. Microhardness of nickel deposits was 585±5 HV, while for cobalt-rich coatings (84–95 wt.% Co the values were in the range of 260–290 HV, independently of the SiC content in the coatings. Fine-grained nickel deposits were characterized by good corrosion resistance, while cobalt and Co-Ni alloys showed high corrosion current densities.

  17. Comprehensive evaluation on efficiency and thermal loading of associated Si and SiC based PV inverter applications

    DEFF Research Database (Denmark)

    Sintamarean, Nicolae Christian; Blaabjerg, Frede; Wang, Huai

    2013-01-01

    This paper deals with the design, control, efficiency and thermal cycling estimation of associated Si and SiC based three-phase PV-inverters. A novel Electro-Thermal Model able to consider the thermal coupling within the Transistor and Diode integrated on the same package is proposed. For each...... topology, three different cases study are simulated, according to the heatsink repartition: one-leg heatsink, shared heatsink and individual heatsink. Based on the model, it has been determined the minimum required heatsink thermal impedance in order not to overpass the device physically thermal...... limitations. Finally, simulation results are analyzed in order to decide which topology has a higher efficiency and a better thermal loading distribution within the devices....

  18. Construction and evaluation of photovoltaic power generation and power storage system using SiC field-effect transistor inverter

    Energy Technology Data Exchange (ETDEWEB)

    Oku, Takeo, E-mail: oku@mat.usp.ac.jp; Matsumoto, Taisuke; Ohishi, Yuya [Department of Materials Science, The University of Shiga Prefecture, 2500 Hassaka, Hikone, Shiga 522-8533 (Japan); Hiramatsu, Koichi; Yasuda, Masashi [Collaborative Research Center, The University of Shiga Prefecture, 2500 Hassaka, Hikone, Shiga 522-8533 (Japan); Shimono, Akio; Takeda, Yoshikazu [Kyoshin Electric Co. Ltd., 18, Goshonouchi-Nishimachi, Shichijo, Shimogyou-ku, Kyoto 600-8865 (Japan); Murozono, Mikio [Clean Venture 21 Co., 38 Ishihara Douno-Ushirocho, Kissyouin, Minami-ku, Kyoto 601-8355 (Japan)

    2016-02-01

    A power storage system using spherical silicon (Si) solar cells, maximum power point tracking charge controller, lithium-ion battery and a direct current-alternating current (DC-AC) inverter was constructed. Performance evaluation of the DC-AC inverter was carried out, and the DC-AC conversion efficiencies of the SiC field-effect transistor (FET) inverter was improved compared with those of the ordinary Si-FET based inverter.

  19. Au ion irradiation of various silicon carbide fiber-reinforced SiC matrix composites

    Energy Technology Data Exchange (ETDEWEB)

    Chaâbane, Nihed, E-mail: nihed.chaabane@cea.fr [CEA, INSTN/UEPTN, F-91191 Gif-sur-Yvette (France); Flem, Marion Le [CEA, DEN/DMN/SRMA, F-91191 Gif-sur-Yvette (France); Tanguy, Morgane [CEA, INSTN/UEPTN, F-91191 Gif-sur-Yvette (France); Urvoy, Stéphane [CEA, DEN/DMN/SRMA, F-91191 Gif-sur-Yvette (France); Sandt, Christophe; Dumas, Paul [Synchrotron SOLEIL, L’Orme des Merisiers, Saint-Aubin, BP 48, 91192 Gif-sur-Yvette Cedex (France); Serruys, Yves [CEA, DEN/DMN/SRMP, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France)

    2013-08-15

    Silicon carbide fiber-reinforced SiC matrix composites are promising candidates as fuel cladding for several concepts of Generation IV reactors and as structural materials for fusion reactors. The composites used in this study were composed of a SiC matrix obtained by chemical vapor infiltration associated with various fiber types (Tyranno Type-S, Tyranno SA Grade-3 and Hi-Nicalon Type-S) and with a PyC layer as the interphase. 12 MeV Au ions were used for irradiation up to 0.05 and 1 displacement per atom (dpa) fluences at room temperature and 800 °C. Analysis of both microstructure and composition of composites were performed by scanning electron microscopy (SEM), electron probe microanalysis and Raman spectroscopy. At room temperature and low fluence, Raman spectroscopy results showed that irradiation induces a disordered/distorted state into fibers and matrix. With increasing fluence, a total amorphization of these constituents occurs. The increase in the irradiation temperature leads to a damage recovery and partial recrystallization of samples. Image analysis performed from SEM micrographs highlights no significant change in fiber diameter and shape. However, SEM analysis suggests a longitudinal shrinkage of Tyranno Type-S fibers for the composite irradiated at 1 dpa at room temperature and 800 °C. These results are in complete agreement with conclusions from neutron irradiations suggesting an appropriate relevance of irradiations with 12 MeV Au.

  20. Polishing, coating and integration of SiC mirrors for space telescopes

    Science.gov (United States)

    Rodolfo, Jacques

    2017-11-01

    In the last years, the technology of SiC mirrors took an increasingly significant part in the field of space telescopes. Sagem is involved in the JWST program to manufacture and test the optical components of the NIRSpec instrument. The instrument is made of 3 TMAs and 4 plane mirrors made of SiC. Sagem is in charge of the CVD cladding, the polishing, the coating of the mirrors and the integration and testing of the TMAs. The qualification of the process has been performed through the manufacturing and testing of the qualification model of the FOR TMA. This TMA has shown very good performances both at ambient and during the cryo test. The polishing process has been improved for the manufacturing of the flight model. This improvement has been driven by the BRDF performance of the mirror. This parameter has been deeply analysed and a model has been built to predict the performance of the mirrors. The existing Dittman model have been analysed and found to be optimistic.

  1. Properties of amorphous SiC coatings deposited on WC-Co substrates

    Directory of Open Access Journals (Sweden)

    Costa A.K.

    2003-01-01

    Full Text Available In this work, silicon carbide films were deposited onto tungsten carbide from a sintered SiC target on a r.f. magnetron sputtering system. Based on previous results about the influence of r.f. power and argon pressure upon the properties of films deposited on silicon substrates, suitable conditions were chosen to produce high quality films on WC-Co pieces. Deposition parameters were chosen in order to obtain high deposition rates (about 30 nm/min at 400 W rf power and acceptable residual stresses (1.5 GPa. Argon pressure affects the energy of particles so that films with higher hardness (30 GPa were obtained at low pressures (0.05 Pa. Wear rates of the coated pieces against a chromium steel ball in a diamond suspension medium were found to be about half of the uncoated ones. Hardness and wear resistance measurements were done also in thermally annealed (200-800 °C samples revealing the effectiveness of SiC coatings to protect tool material against severe mechanical degradation resulting of high temperature (above 500 °C oxidation.

  2. Assessment of intrinsic small signal parameters of submicron SiC MESFETs

    Science.gov (United States)

    Riaz, Mohammad; Ahmed, Muhammad Mansoor; Rafique, Umair; Ahmed, Umer Farooq

    2018-01-01

    In this paper, a technique has been developed to estimate intrinsic small signal parameters of submicron SiC MESFETs, designed for high power microwave applications. In the developed technique, small signal parameters are extracted by involving drain-to-source current, Ids instead of Schottky barrier depletion layer expression. It has been demonstrated that in SiC MESFETs, the depletion layer gets modified due to intense transverse electric field and/or self-heating effects, which are conventionally not taken into account. Thus, assessment of AC small signal parameters by employing depletion layer expression loses its accuracy for devices meant for high power applications. A set of expressions for AC small signal elements has been developed using Ids and its dependence on device biasing has been discussed. The validity of the proposed technique has been demonstrated using experimental data. Dr. Ahmed research interests are in Microelectronics, Microwave and RF Engineering and he has supervised numerous MS and PhD research projects. He authored over 100 research papers in the field of microelectronics. Dr. Ahmed is a fellow of the Institution of Engineering and Technology (IET), UK.; a Chartered Engineer (CEng) from the UK Engineering Council and holds the title of European Engineer (Eur Ing) from the European Federation of National Engineering Association (FEANI), Brussels. He is a life member of PEC (Pak); EDS & MTTS (USA).

  3. SiC: An Agent Based Architecture for Preventing and Detecting Attacks to Ubiquitous Databases

    Science.gov (United States)

    Pinzón, Cristian; de Paz, Yanira; Bajo, Javier; Abraham, Ajith; Corchado, Juan M.

    One of the main attacks to ubiquitous databases is the structure query language (SQL) injection attack, which causes severe damages both in the commercial aspect and in the user’s confidence. This chapter proposes the SiC architecture as a solution to the SQL injection attack problem. This is a hierarchical distributed multiagent architecture, which involves an entirely new approach with respect to existing architectures for the prevention and detection of SQL injections. SiC incorporates a kind of intelligent agent, which integrates a case-based reasoning system. This agent, which is the core of the architecture, allows the application of detection techniques based on anomalies as well as those based on patterns, providing a great degree of autonomy, flexibility, robustness and dynamic scalability. The characteristics of the multiagent system allow an architecture to detect attacks from different types of devices, regardless of the physical location. The architecture has been tested on a medical database, guaranteeing safe access from various devices such as PDAs and notebook computers.

  4. Modeling of the relaxation kinetics of phosphorus doped metastable tensile strained Si:C alloys

    Energy Technology Data Exchange (ETDEWEB)

    Ulomek, Felix; Mohles, Volker [Institut fuer Metallkunde und Metallphysik, RWTH Aachen (Germany); Ostermay, Ina; Kammler, Thorsten [GLOBALFOUNDRIES Dresden Module One LLC and Co. KG, Wilschdorfer Landstrasse 101, 01109 Dresden (Germany)

    2011-07-01

    In order to enhance the performance of CMOS transistors, embedded epitaxial layers of Si:C are of interest. In the present work, Si:C layers with Carbon contents up to 1.9 at-% and in-situ Phosphorus doping up to 4.10{sup 20} At/cm{sup 3} have been investigated. Due to the low solubility of Carbon in Silicon (0.0004 at.-% at the melting point), all layers considered in this work are metastable and tend to relax. Since it is crucial to the application to retain the strain of those layers, the responsible mechanisms must be understood. The relaxation during thermal treatment was studied by high resolution x-ray diffraction and was found to behave differently, depending on Carbon content and Phosphorus doping concentration. We model the macroscopic relaxation behavior by statistical simulations and extrapolate the behaviors for different relaxation conditions. The resulting activation energies, which are fit parameters in this model, are compared to values of atomistic simulations.

  5. Modeling of the relaxation kinetics of metastable tensile strained Si:C alloys

    Energy Technology Data Exchange (ETDEWEB)

    Ulomek, Felix; Mohles, Volker [Institut fuer Metallkunde und Metallphysik, RWTH Aachen (Germany); Ostermay, Ina [Fraunhofer-Center Nanoelektronische Technologien, Dresden (Germany); Kammler, Thorsten [GLOBALFOUNDRIES Dresden Module One LLC and Co. KG, Dresden (Germany)

    2010-07-01

    In order to enhance the performance of CMOS transistors, embedded epitaxial layers of Si:C can be used. In the present work, Si:C layers with Carbon contents up to 1.9 at-% and in-situ Phosphorus doping up to 4 x 10{sup 20}At/cm{sup 3} have been investigated. Due to the low solubility of Carbon in Silicon (0.0004 at.-% at the melting point), all layers considered in this work are metastable and tend to relax. Since it is crucial to the application to retain the strain of those layers, the responsible mechanisms must be understood. The relaxation during thermal treatment was studied by high resolution X-ray diffraction and was found to behave differently, depending on Carbon content and Phosphorus doping concentration. In this work, we propose a relaxation mechanism based on a kick-out reaction of substitutional Carbon which is accelerated by Phosphorus content through transient enhanced diffusion. We simulate the time evolution of layer relaxation as a function of alloying content, layer thickness and temperature. Parameters for the reaction kinetics are obtained by fitting to the experimental data.

  6. The nanostructure and microstructure of SiC surface layers deposited by MWCVD and ECRCVD

    Science.gov (United States)

    Dul, K.; Jonas, S.; Handke, B.

    2017-12-01

    Scanning electron microscopy (SEM) and Atomic force microscopy (AFM) have been used to investigate ex-situ the surface topography of SiC layers deposited on Si(100) by Microwave Chemical Vapour Deposition (MWCVD) -S1,S2 layers and Electron Cyclotron Resonance Chemical Vapor Deposition (ECRCVD) - layers S3,S4, using silane, methane, and hydrogen. The effects of sample temperature and gas flow on the nanostructure and microstructure have been investigated. The nanostructure was described by three-dimensional surface roughness analysis based on digital image processing, which gives a tool to quantify different aspects of surface features. A total of 13 different numerical parameters used to describe the surface topography were used. The scanning electron image (SEM) of the microstructure of layers S1, S2, and S4 was similar, however, layer S3 was completely different; appearing like grains. Nonetheless, it can be seen that no grain boundary structure is present in the AFM images.

  7. Processing and Structural Advantages of the Sylramic-iBN SiC Fiber for SiC/SiC Components

    Science.gov (United States)

    Yun, H. M.; Dicarlo, J. A.; Bhatt, R. T.; Hurst, J. B.

    2008-01-01

    The successful high-temperature application of complex-shaped SiC/SiC components will depend on achieving as high a fraction of the as-produced fiber strength as possible during component fabrication and service. Key issues center on a variety of component architecture, processing, and service-related factors that can reduce fiber strength, such as fiber-fiber abrasion during architecture shaping, surface chemical attack during interphase deposition and service, and intrinsic flaw growth during high-temperature matrix formation and composite creep. The objective of this paper is to show that the NASA-developed Sylramic-iBN SiC fiber minimizes many of these issues for state-of-the-art melt-infiltrated (MI) SiC/BN/SiC composites. To accomplish this, data from various mechanical tests are presented that compare how different high performance SiC fiber types retain strength during formation of complex architectures, during processing of BN interphases and MI matrices, and during simulated composite service at high temperatures.

  8. Fracture Mechanisms For SiC Fibers And SiC/SiC Composites Under Stress-Rupture Conditions at High Temperatures

    Science.gov (United States)

    DiCarlo, James A.; Yun, Hee Mann; Hurst, Janet B.; Viterna, L. (Technical Monitor)

    2002-01-01

    The successful application of SiC/SiC ceramic matrix composites as high-temperature structural materials depends strongly on maximizing the fracture or rupture life of the load-bearing fiber and matrix constituents. Using high-temperature data measured under stress-rupture test conditions, this study examines in a mechanistic manner the effects of various intrinsic and extrinsic factors on the creep and fracture behavior of a variety of SiC fiber types. It is shown that although some fiber types fracture during a large primary creep stage, the fiber creep rate just prior to fracture plays a key role in determining fiber rupture time (Monkman-Grant theory). If it is assumed that SiC matrices rupture in a similar manner as fibers with the same microstructures, one can develop simple mechanistic models to analyze and optimize the stress-rupture behavior of SiC/SiC composites for applied stresses that are initially below matrix cracking.

  9. An Experimental Study Of Aluminum Alloy Matrix Composite Reinforced SiC Made By Hot Pressing Method

    Directory of Open Access Journals (Sweden)

    Suśniak M.

    2015-06-01

    Full Text Available The present work investigates the possibility of using powder metallurgy processing for producing a metal matrix composite. Materials were prepared from AlSi5Cu2 chips with reinforcement of 10, 15, 20 wt. % silicon carbide. Aluminum alloy chips were milled with SiC powder in a high-energy ball mill by 40 hours. Mechanical alloying process lead to obtain an uniform distribution of hard SiC particles in the metallic matrix and refine the grain size. The consolidation of composite powders was performed by vacuum hot pressing at 450°C, under pressure of 600 MPa by 10 min. The results shows that the addition of SiC particles has a substantial influence on the microstructure and mechanical properties of composite powder as well as consolidated material. Hot pressing is an effective consolidation method which leads to obtain dense AlSi5Cu2/SiC composite with homogeneous structure and advanced mechanical properties.

  10. System for the growth of bulk SiC crystals by modified CVD techniques. Final report, December 1993-December 1994

    Energy Technology Data Exchange (ETDEWEB)

    Steckl, A.J.

    1994-12-01

    The goal of this program was the development of a SiC CVD growth of films thick enough to be useful as pseudo-substrates. The cold-walled CVD system was designed, assembled, and tested. Extrapolating from preliminary evaluation of SiC films grown in the system at relatively low temperatures indicates that the growth rate at the final temperatures will be high enough to make this approach practical. Modifications of the system to allow high temperature growth and cleaner growth conditions are in progress. This program was jointly funded by Wright Laboratory, Materials Directorate and NASA LeRC and monitored by NASA.

  11. Studies on the Codeposition of SiC Nanopowder with Nickel, Cobalt, and Co-Ni Alloys

    OpenAIRE

    Ewa Rudnik; Sławomir Syrek

    2014-01-01

    Electrodeposition of SiC nanopowder (approximately 120 nm) with nickel, cobalt, and Co-Ni alloy matrix was studied. It was found that particles suspended in the bath affect slightly the reduction of metallic ions. Incorporation of the ceramic particles was governed mainly by the morphology of the matrix surface, while no strict correlation between the amount of cobalt ions adsorbed on the powder and the SiC content in the composites was found. Microhardness of nickel deposits was 585±5 HV, wh...

  12. Wettability of Ti3SiC2 by Ag-Cu and Ag-Cu-Ti melts

    OpenAIRE

    Dezellus, Olivier; Voytovych, R.; Li A., P.-H.; Constantin, G.; Bosselet, F.; Viala, J.C.

    2009-01-01

    International audience; Recently, the ternary carbide Ti3SiC2 has gained much attention due to its unique characteristics combining the properties of metals and ceramics (i.e., a low density, decent thermal and electrical conductivities, an excellent thermal shock resistance, a good machinability, damage tolerance, low friction and so on). The present study describes an investigation of the wettability in high vacuum of bulk Ti3SiC2 by a classical braze alloy based on the Ag-Cu-Ti system. Two...

  13. Circuit mismatch and current coupling effect influence on paralleling SiC MOSFETs in multichip power modules

    DEFF Research Database (Denmark)

    Li, Helong; Beczkowski, Szymon; Munk-Nielsen, Stig

    2015-01-01

    This paper reveals that there are circuit mismatches and a current coupling effect in the direct bonded copper (DBC) layout of a silicon carbide (SiC) MOSFET multichip power module. According to the modelling and the mathematic analysis of the DBC layout, the mismatch of the common source stray...... inductance in the DBC layout can lead to transient current imbalance among the paralleled SiC MOSFET dies in the multichip power module while the current coupling effect aggravates the current imbalance. Two models of the power module DBC layout, with and without the current coupling effect, are compared...

  14. Photoluminescence enhancement in porous SiC passivated by atomic layer deposited Al2O3 films

    DEFF Research Database (Denmark)

    Lu, Weifang; Iwasa, Yoshimi; Ou, Yiyu

    2016-01-01

    Porous SiC co-doped with B and N was passivated by atomic layer deposited (ALD) Al2O3 films to enhance the photoluminescence. After optimizing the deposition conditions, as high as 14.9 times photoluminescence enhancement has been achieved.......Porous SiC co-doped with B and N was passivated by atomic layer deposited (ALD) Al2O3 films to enhance the photoluminescence. After optimizing the deposition conditions, as high as 14.9 times photoluminescence enhancement has been achieved....

  15. Effect Of SiC Particles On Sinterability Of Al-Zn-Mg-Cu P/M Alloy

    Directory of Open Access Journals (Sweden)

    Rudianto H.

    2015-06-01

    Full Text Available Premix Al-5.5Zn-2.5Mg-0.5Cu alloy powder was analyzed as matrix in this research. Gas atomized powder Al-9Si with 20% volume fraction of SiC particles was used as reinforcement and added into the alloy with varied concentration. Mix powders were compacted by dual action press with compaction pressure of 700 MPa. High volume fraction of SiC particles gave lower green density due to resistance of SiC particles to plastic deformation during compaction process and resulted voids between particles and this might reduce sinterability of this mix powder. Sintering was carried out under ultra high purity nitrogen gas from 565°-580°C for 1 hour. High content of premix Al-5.5Zn-2.5Mg-0.5Cu alloy powder gave better sintering density and reached up to 98% relative. Void between particles, oxide layer on aluminum powder and lower wettability between matrix and reinforcement particles lead to uncompleted liquid phase sintering, and resulted on lower sintering density and mechanical properties on powder with high content of SiC particles. Mix powder with wt90% of Alumix 431D and wt10% of Al-9Si-vf20SiC powder gave higher tensile strength compare to another mix powder for 270 MPa. From chemical compositions, sintering precipitates might form after sintering such as MgZn2, CuAl2 and Mg2Si. X-ray diffraction, DSC-TGA, and SEM were used to characterize these materials.

  16. Synthesis and Characterization of Novel Preceramic Polymer for SiC

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Y J; Lee, J H; Kim, S R; Kwon, W T; Oh, H; Klepeis, J P; Teat, S; Kim, Y H

    2009-08-20

    Polyphenylcarbosilane as a novel preceramic polymer for SiC was synthesized from thermal rearrangement of polymethylphenylsilane around 350 C {approx} 430 C. Characterization of synthesized polyphenylcarbosilane was performed with {sup 29}Si, {sup 13}C, {sup 1}H NMR, FT-IR, TG, XRD, and GPC analysis. From FT-IR data, the band at 1035 cm{sup -1} was very strong and assigned to CH{sub 2} bending vibration in Si-CH{sub 2}-Si group, indicating the formation of the polyphenylcarbosilane. The average of the molecular weight (M{sub w}) of the polyphenylcarbosilane synthesized was 2,500 and easily dissolves in an organic solvent. TGA data indicates that polyphenylcarbosilane is thermally stable up to 400 C. However, the rapid weight loss occurs above 400 C due to the pyrolysis of polyphenylcarbosilane, and the diffraction peak of pyrolysis residue at 1200 C corresponds to the {beta}-SiC ceramic. The ceramic yield calculated from TGA is approximately 65%.

  17. Experimental study of thermo-mechanical behavior of SiC composite tubing under high temperature gradient using solid surrogate

    Energy Technology Data Exchange (ETDEWEB)

    Alva, Luis; Shapovalov, Kirill [University of South Carolina, Mechanical Engineering Department (United States); Jacobsen, George M.; Back, Christina A. [General Atomics (United States); Huang, Xinyu, E-mail: huangxin@mailbox.sc.edu [University of South Carolina, Mechanical Engineering Department (United States)

    2015-11-15

    Nuclear grade silicon carbide fiber (SiC{sub f}) reinforced silicon carbide matrix (SiC{sub m}) composite is a promising candidate material for accident tolerance fuel (ATF) cladding. A major challenge is ensuring the mechanical robustness of the ceramic cladding under accident conditions. In this work the high temperature mechanical response of a SiC{sub f}–SiC{sub m} composite tubing is studied using a novel thermo-mechanical test method. A solid surrogate tube is placed within and bonded to the SiC{sub f}–SiC{sub m} sample tube using a ceramic adhesive. The bonded tube pair is heated from the center using a ceramic glower. During testing, the outer surface temperature of the SiC sample tube rises up to 1274 K, and a steep temperature gradient develops through the thickness of the tube pair. Due to CTE mismatch and the temperature gradient, the solid surrogate tube induces high tensile stress in the SiC sample. During testing, 3D digital image correlation (DIC) method is used to map the strains on the outer surface of the SiC-composite, and acoustic emissions (AE) are monitored to detect the onset and progress of material damage. The thermo-mechanical behavior of SiC-composite sample is compared with that of monolithic SiC samples. Finite element models are developed to estimate stress–strain distribution within the tube assembly. Model predicted surface strain matches the measured surface strain using the DIC method. AE activities indicated a progressive damage process for SiC{sub f}–SiC{sub m} composite samples. For the composites tested in this study, the threshold mechanical hoop strain for matrix micro-cracking to initiate in SiC{sub f}–SiC{sub m} sample is found to be ∼300 microstrain.

  18. MICROSCOPIC ASPECT AND MECHANICS OF CREEP-FATIGUE FAILURE IN SiC WHISKER REINFORCED ALUMINUM BASE COMPOSITE AT HIGH TEMPERATURE

    National Research Council Canada - National Science Library

    OKAZAKI, Masakazu; TASHIRO, Hiromichi; MIZUTANI, Junnosuke

    1997-01-01

    The microscopic aspect of creep-fatigue failure process in a 6061 aluminum alloy composite reinforced with SiC whiskers, SiCw/6061, was studied at high temperature, with specific attention being paid...

  19. Retention and damage in 3C-β SiC irradiated with He and H ions

    Energy Technology Data Exchange (ETDEWEB)

    Deslandes, Alec, E-mail: alec.deslandes@csiro.au [Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee DC, New South Wales 2232 (Australia); Guenette, Mathew C. [Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee DC, New South Wales 2232 (Australia); Thomsen, Lars [Australian Synchrotron, 800 Blackburn Road, Clayton, Victoria 3168 (Australia); Ionescu, Mihail; Karatchevtseva, Inna; Lumpkin, Gregory R. [Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee DC, New South Wales 2232 (Australia)

    2016-02-15

    3C-β SiC was implanted with He and H ions using plasma immersion ion implantation (PIII). Regions of damage were created at various depths by applying a sample stage bias of 5 kV, 10 kV, 20 kV or 30 kV. Raman spectroscopy results indicate that He irradiation leads to more damage compared to H irradiation, as observed via increased disordered C and Si signals, as well as broadening of the SiC peaks. X-ray photoelectron spectroscopy (XPS) and near edge X-ray absorption fine structure spectroscopy (NEXAFS) results indicate significant change to the SiC structure and that surface oxidation has occurred following irradiation, with the degree of change varying dependent on impinging He fluence. The distributions of implanted species were measured using elastic recoil detection analysis. Despite the varying degree and depth of damage created in the SiC by the He ion irradiations, the retained H distribution was observed to not be affected by preceding He implantation.

  20. A Manufacturing Cost and Supply Chain Analysis of SiC Power Electronics Applicable to Medium-Voltage Motor Drives

    Energy Technology Data Exchange (ETDEWEB)

    Horowitz, Kelsey [National Renewable Energy Lab. (NREL), Golden, CO (United States); Remo, Timothy [National Renewable Energy Lab. (NREL), Golden, CO (United States); Reese, Samantha [National Renewable Energy Lab. (NREL), Golden, CO (United States)

    2017-03-24

    Wide bandgap (WBG) semiconductor devices are increasingly being considered for use in certain power electronics applications, where they can improve efficiency, performance, footprint, and, potentially, total system cost compared to systems using traditional silicon (Si) devices. Silicon carbide (SiC) devices in particular -- which are currently more mature than other WBG devices -- are poised for growth in the coming years. Today, the manufacturing of SiC wafers is concentrated in the United States, and chip production is split roughly equally between the United States, Japan, and Europe. Established contract manufacturers located throughout Asia typically carry out manufacturing of WBG power modules. We seek to understand how global manufacturing of SiC components may evolve over time by illustrating the regional cost drivers along the supply chain and providing an overview of other factors that influence where manufacturing is sited. We conduct this analysis for a particular case study where SiC devices are used in a medium-voltage motor drive.

  1. Chemical compatibility between UO2 fuel and SiC cladding for LWRs. Application to ATF (Accident-Tolerant Fuels)

    Science.gov (United States)

    Braun, James; Guéneau, Christine; Alpettaz, Thierry; Sauder, Cédric; Brackx, Emmanuelle; Domenger, Renaud; Gossé, Stéphane; Balbaud-Célérier, Fanny

    2017-04-01

    Silicon carbide-silicon carbide (SiC/SiC) composites are considered to replace the current zirconium-based cladding materials thanks to their good behavior under irradiation and their resistance under oxidative environments at high temperature. In the present work, a thermodynamic analysis of the UO2±x/SiC system is performed. Moreover, using two different experimental methods, the chemical compatibility of SiC towards uranium dioxide, with various oxygen contents (UO2±x) is investigated in the 1500-1970 K temperature range. The reaction leads to the formation of mainly uranium silicides and carbides phases along with CO and SiO gas release. Knudsen Cell Mass Spectrometry is used to measure the gas release occurring during the reaction between UO2+x and SiC powders as function of time and temperature. These experimental conditions are representative of an open system. Diffusion couple experiments with pellets are also performed to study the reaction kinetics in closed system conditions. In both cases, a limited chemical reaction is observed below 1700 K, whereas the reaction is enhanced at higher temperature due to the decomposition of SiC leading to Si vaporization. The temperature of formation of the liquid phase is found to lie between 1850 < T < 1950 K.

  2. Influence of Ni-P Coated SiC and Laser Scan Speed on the Microstructure and Mechanical Properties of IN625 Metal Matrix Composites

    Science.gov (United States)

    Sateesh, N. H.; Kumar, G. C. Mohan; Krishna, Prasad

    2015-12-01

    Nickel based Inconel-625 (IN625) metal matrix composites (MMCs) were prepared using pre-heated nickel phosphide (Ni-P) coated silicon carbide (SiC) reinforcement particles by Direct Metal Laser Sintering (DMLS) additive manufacturing process under inert nitrogen atmosphere to obtain interface influences on MMCs. The distribution of SiC particles and microstructures were characterized using optical and scanning electron micrographs, and the mechanical behaviours were thoroughly examined. The results clearly reveal that the interface integrity between the SiC particles and the IN625 matrix, the mixed powders flowability, the SiC ceramic particles and laser beam interaction, and the hardness, and tensile characteristics of the DMLS processed MMCs were improved effectively by the use of Ni-P coated SiC particles.

  3. Titanium isotopic compositions of rare presolar SiC grain types from the Murchison meteorite

    Science.gov (United States)

    Nguyen, Ann N.; Nittler, Larry R.; Alexander, Conel M. O'D.; Hoppe, Peter

    2018-01-01

    We report the Ti isotopic compositions of 8 mainstream, 22 Y, 9 Z, and 26 AB presolar SiC grains from two SiC-rich residues of the Murchison CM2 meteorite together with Si, C and some Mg-Al isotopic data for the same grains. Mainstream, Y and Z grains are believed to originate in asymptotic giant branch (AGB) stars of varying metallicities, but the stellar sources of AB grains are poorly understood. We find that the 46,47,49Ti/48Ti ratios are correlated with 29Si/28Si for all of the grain types, indicating that these ratios are mainly dominated by Galactic chemical evolution (GCE). The mainstream, Y and Z grains all show enrichments in 50Ti from neutron capture nucleosynthesis. However, AGB models predict smaller excesses in 50Ti (and 49Ti) than are observed in these grains. For Z grains and especially for Y grains, the enhancement of 50Ti is greater than the enhancement in 30Si, indicating that the 13C neutron source produced a greater total fluence of neutrons than the 22Ne source in the low metallicity parent AGB stars. The Z grains plot below the mainstream correlation lines at more 48Ti- and 28Si-rich compositions in plots of 46,47,49Ti/48Ti vs. 29Si/28Si. On the other hand, the Y grains plot close to the mainstream correlation line. This could imply that the Ti isotopes evolved non-linearly at metallicities below ∼1/3 solar. The AB grains in this study have Ti isotopic compositions that fall along correlation lines defined by the mainstream grains, suggesting origins in close to solar metallicity stars. However, these grains fall below the mainstream correlation lines in plots of 46,49,50Ti/48Ti vs. 29Si/28Si and do not show enhancements in 50Ti, indicating that their parent stars did not undergo significant s-process nucleosynthesis. These data support origins of AB grains in J-type C stars rather than born-again AGB stars that undergo s-process nucleosynthesis. AB grains that do not have 50Ti excesses may provide the best measure of Si and Ti isotope GCE

  4. A theoretical study on the thermal oxidation of silicon carbide: Chemical species at the SiO2/SiC interface

    Science.gov (United States)

    Tajima, Nobuo; Kaneko, Tomoaki; Nara, Jun; Yamasaki, Takahiro; Schimizu, Tatsuo; Kato, Koichi; Ohno, Takahisa

    Silicon carbide (SiC) is potentially a suitable candidate of the channel materials of power devices since it has wide bandgap, high electron mobility, and thermal conductivity. Furthermore, it is favorable for device fabrication as it can be thermally oxidized to create insulating silicon oxide (SiO2) layer. However, the SiC devices of current technology do not show acceptable performance because of a defective nature of the created SiO2/SiC stacking structure, which causes problems such as channel mobility degradation, threshold voltage increase, and leakage current. The origins of the defective nature are not understood so far, though it is presumed that they are rather concentrated at the interface. In the present study, we have performed first principles calculations to know the chemical species possibly produced at the oxide interface of thermally oxidized SiC. The First principles simulation code PHASE/0 (http://www.ciss.iis.u-tokyo.ac.jp/riss/english/project/device/) was used in the theoretical calculations. A portion of this research was supported by the Grant from MEXT's project and carried out in partnership with the University of Tokyo.

  5. Enhanced performance of nano-sized SiC reinforced Al metal matrix nanocomposites synthesized through microwave sintering and hot extrusion techniques

    Directory of Open Access Journals (Sweden)

    M. Penchal Reddy

    2017-10-01

    Full Text Available In the present study, nano-sized SiC (0, 0.3, 0.5, 1.0 and 1.5 vol% reinforced aluminum (Al metal matrix composites were fabricated by microwave sintering and hot extrusion techniques. The structural (XRD, SEM, mechanical (nanoindentation, compression, tensile and thermal properties (co-efficient of thermal expansion-CTE of the developed Al-SiC nanocomposites were studied. The SEM/EDS mapping images show a homogeneous distribution of SiC nanoparticles into the Al matrix. A significant increase in the strength (compressive and tensile of the Al-SiC nanocomposites with the addition of SiC content is observed. However, it is noticed that the ductility of Al-SiC nanocomposites decreases with increasing volume fraction of SiC. The thermal analysis indicates that CTE of Al-SiC nanocomposites decreases with the progressive addition of hard SiC nanoparticles. Overall, hot extruded Al 1.5 vol% SiC nanocomposites exhibited the best mechanical and thermal performance as compared to the other developed Al-SiC nanocomposites. Keywords: Al-SiC nanocomposites, Microwave sintering, Hot extrusion, Mechanical properties, Thermal expansion

  6. Enhanced cycle stability of micro-sized Si/C anode material with low carbon content fabricated via spray drying and in situ carbonization

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Dingsheng; Gao, Mingxia, E-mail: gaomx@zju.edu.cn; Pan, Hongge; Liu, Yongfeng; Wang, Junhua; Li, Shouquan; Ge, Hongwei

    2014-08-01

    Highlights: • Micro-sized Si/C composites were fabricated via. spray drying and carbonization. • Multi-morphology carbon was formed in the Si/C composites. • Si/C composite with 5.6 wt.% C provides significant improved cycling stability. • Multi-morphology carbon plays effective role in improving the electrochemical property. • The method provides potential for mass production of superior Si-based anode materials. - Abstract: Micro-sized Si/C composites with in situ introduced carbon of multi-morphology were fabricated via spray drying a suspension of commercial micro-sized Si and citric acid followed by a carbonization. Different ratios of Si to citric acid were used to optimize the composition and structure of the composites and thus the electrochemical performance. Carbon flakes including crooked and flat ones were well dispersed in between the Si particles, forming Si/C composites. Floc-like carbon layers and carbon fragments were also found to cover partially the Si particles. The Si/C composite with a low carbon content of 5.6 wt.% provides an initial reversible capacity of 2700 mA h/g and a capacity of 1860 mA h/g after 60 cycles at a current density of 100 mA/g as anode material for lithium-ion batteries (LIBs), which are much higher than those of pristine Si and the Si/C composites with higher carbon content. The mechanism of the enhancement of electrochemical performance of the micro-sized Si/C composite is discussed. The fabrication method and the structure design of the composites offer valuable potential in developing adaptable Si-based anode materials for industrial applications.

  7. Experimental Durability Testing of 4H SiC JFET Integrated Circuit Technology at 727 C

    Science.gov (United States)

    Spry, David; Neudeck, Phil; Chen, Liangyu; Chang, Carl; Lukco, Dorothy; Beheim, Glenn M

    2016-01-01

    We have reported SiC integrated circuits (IC's) with two levels of metal interconnect that have demonstrated prolonged operation for thousands of hours at their intended peak ambient operational temperature of 500 C [1, 2]. However, it is recognized that testing of semiconductor microelectronics at temperatures above their designed operating envelope is vital to qualification. Towards this end, we previously reported operation of a 4H-SiC JFET IC ring oscillator on an initial fast thermal ramp test through 727 C [3]. However, this thermal ramp was not ended until a peak temperature of 880 C (well beyond failure) was attained. Further experiments are necessary to better understand failure mechanisms and upper temperature limit of this extreme-temperature capable 4H-SiC IC technology. Here we report on additional experimental testing of custom-packaged 4H-SiC JFET IC devices at temperatures above 500 C. In one test, the temperature was ramped and then held at 727 C, and the devices were periodically measured until electrical failure was observed. A 4H-SiC JFET on this chip electrically functioned with little change for around 25 hours at 727 C before rapid increases in device resistance caused failure. In a second test, devices from our next generation 4H-SiC JFET ICs were ramped up and then held at 700 C (which is below the maximum deposition temperature of the dielectrics). Three ring oscillators functioned for 8 hours at this temperature before degradation. In a third experiment, an alternative die attach of gold paste and package lid was used, and logic circuit operation was demonstrated for 143.5 hours at 700 C.

  8. Re-evaluation of SiC permeation coefficients at high temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Yamamoto, Yasushi, E-mail: yama3707@kansai-u.ac.jp [Faculty of Engineering Science, Kansai Univ., Yamate-cho, Suita, Osaka 564-8680 (Japan); Murakami, Yuichiro; Yamaguchi, Hirosato; Yamamoto, Takehiro; Yonetsu, Daigo [Faculty of Engineering Science, Kansai Univ., Yamate-cho, Suita, Osaka 564-8680 (Japan); Noborio, Kazuyuki [Hydrogen Isotope Research Center, Univ. of Toyama, Toyama, Toyama 930-8555 (Japan); Konishi, Satoshi [Institute of Advanced Energy, Kyoto Univ., Gokasho, Uji, Kyoto 611-0011 (Japan)

    2016-11-01

    Highlights: • The deuterium permeation coefficients of CVD-SiC at 600–950 °C were evaluated. • The wraparound flow was reduced to less than 1/100th of the permeation flow. • CVD-SiC materials are very effective as hydrogen isotope permeation barriers. - Abstract: Since 2007, our group has studied the deuterium permeation and diffusion coefficients for SiC materials at temperatures above 600 °C as a means of evaluating the tritium inventory and permeation in fusion blankets. During such measurements, control and evaluation of the wraparound flow through the sample holder are important, and so the heated sample holder is enclosed by a glass tube and kept under vacuum during experimental trials. However, detailed studies regarding the required degree of vacuum based on model calculations have shown that the wraparound flow is much larger than expected, and so can affect measurements at high temperatures. We therefore modified the measurement apparatus based on calculations involving reduced pressure in the glass tube, and are now confident that the measurement error is only several percent, even at 950 °C. In this paper, recent experimental results obtained with a chemical vapor deposition (CVD)-SiC sample over the temperature range of 600–950 °C are presented, showing that the permeation coefficient for CVD-SiC is more than three orders of magnitude smaller than that for stainless steel (SS316) at 600 °C, and that at 950 °C, the coefficient for CVD-SiC is almost equal to that for SUS316 at 550 °C.

  9. Taking SiC Power Devices to the Final Frontier: Addressing Challenges of the Space Radiation Environment

    Science.gov (United States)

    Lauenstein, Jean-Marie; Casey, Megan

    2017-01-01

    Silicon carbide power device technology has the potential to enable a new generation of aerospace power systems that demand high efficiency, rapid switching, and reduced mass and volume in order to expand space-based capabilities. For this potential to be realized, SiC devices must be capable of withstanding the harsh space radiation environment. Commercial SiC components exhibit high tolerance to total ionizing dose but to date, have not performed well under exposure to heavy ion radiation representative of the on-orbit galactic cosmic rays. Insertion of SiC power device technology into space applications to achieve breakthrough performance gains will require intentional development of components hardened to the effects of these highly-energetic heavy ions. This work presents heavy-ion test data obtained by the authors over the past several years for discrete SiC power MOSFETs, JFETs, and diodes in order to increase the body of knowledge and understanding that will facilitate hardening of this technology to space radiation effects. Specifically, heavy-ion irradiation data taken under different bias, temperature, and ion beam conditions is presented for devices from different manufacturers, and the emerging patterns discussed.

  10. Structural analyses of reaction layers between SiC and Ti-6Al-4V after laser embedding

    NARCIS (Netherlands)

    de Hosson, J.T.M.; Kloosterman, A.J.; Kooi, B.J.; Brebbia, CA; Kenny, JM

    1999-01-01

    Metal-matrix-composites are produced by the laser particle injection processing route. SiC particles are entrapped during solidification of liquid Ti. Since the injected particles partially dissolve, depending on the process conditions, new phases are formed in the matrix. The degree of dissolution

  11. SiC JFET Cascode Loss Dependency on the MOSFET Output Capacitance and Performance Comparison with Trench IGBTs

    DEFF Research Database (Denmark)

    Pittini, Riccardo; Zhang, Zhe; Andersen, Michael A. E.

    2013-01-01

    In power electronics there is a general trend to increase converters efficiencies and power densities; for this reason new power semiconductors based on materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are becoming more popular. This is especially valid for renewable energies app...

  12. Wear behaviour of A356 aluminium alloy reinforced with micron and nano size SiC particles

    CSIR Research Space (South Africa)

    Camagu, ST

    2013-07-01

    Full Text Available A method for producing metal matrix composites MMC was successfully implemented for mixing nano and low micron (“Hybrid”) sized SiC reinforcing particles in an aluminium alloy matrix. Due to the improved specific modulus and strength, MMC...

  13. A High Power Boost Converter for PV Systems Operating up to 300 kHz using SiC Devices

    DEFF Research Database (Denmark)

    Anthon, Alexander; Zhang, Zhe; Andersen, Michael A. E.

    2014-01-01

    In this paper, a 3kW boost converter for PV applications using SiC devices is introduced. Main focus is to operate the converter over a wide range of switching frequency and to analyze the main loss distributors as well as the efficiency. The switching element is a recently introduced normally...

  14. 11.72 sq cm SiC Wafer-scale Interconnected 64 kA PiN Diode

    Science.gov (United States)

    2012-01-30

    breakdown voltage yield of 83% was achieved. The diodes selected demonstrate sharp onsets of breakdown voltage as illustrated in Fig. 3. Diodes...645-648, pp. 1017-1020, 2010. [2] D. Peters, W. Bartsch , B. Thomas, and R. Sommer, ―6.5 kV SiC PiN Diodes with Improved Forward Characteristics

  15. First principles-based multiparadigm, multiscale strategy for simulating complex materials processes with applications to amorphous SiC films

    Energy Technology Data Exchange (ETDEWEB)

    Naserifar, Saber [Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089-1211 (United States); Materials and Process Simulation Center, California Institute of Technology, Pasadena, California 91125 (United States); Goddard, William A. [Materials and Process Simulation Center, California Institute of Technology, Pasadena, California 91125 (United States); Tsotsis, Theodore T.; Sahimi, Muhammad, E-mail: moe@usc.edu [Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089-1211 (United States)

    2015-05-07

    Progress has recently been made in developing reactive force fields to describe chemical reactions in systems too large for quantum mechanical (QM) methods. In particular, ReaxFF, a force field with parameters that are obtained solely from fitting QM reaction data, has been used to predict structures and properties of many materials. Important applications require, however, determination of the final structures produced by such complex processes as chemical vapor deposition, atomic layer deposition, and formation of ceramic films by pyrolysis of polymers. This requires the force field to properly describe the formation of other products of the process, in addition to yielding the final structure of the material. We describe a strategy for accomplishing this and present an example of its use for forming amorphous SiC films that have a wide variety of applications. Extensive reactive molecular dynamics (MD) simulations have been carried out to simulate the pyrolysis of hydridopolycarbosilane. The reaction products all agree with the experimental data. After removing the reaction products, the system is cooled down to room temperature at which it produces amorphous SiC film, for which the computed radial distribution function, x-ray diffraction pattern, and the equation of state describing the three main SiC polytypes agree with the data and with the QM calculations. Extensive MD simulations have also been carried out to compute other structural properties, as well the effective diffusivities of light gases in the amorphous SiC film.

  16. A High Frequency (HF) Inductive Power Transfer Circuit for High Temperature Applications Using SiC Schottky Diodes

    Science.gov (United States)

    Jordan, Jennifer L.; Ponchak, George E.; Spry, David J.; Neudeck, Philip G.

    2018-01-01

    Wireless sensors placed in high temperature environments, such as aircraft engines, are desirable to reduce the mass and complexity of routing wires. While communication with the sensors is straight forward, providing power wirelessly is still a challenge. This paper introduces an inductive wireless power transfer circuit incorporating SiC Schottky diodes and its operation from room temperature (25 C) to 500 C.

  17. Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules

    DEFF Research Database (Denmark)

    Luo, Haoze; Baker, Nick; Iannuzzo, Francesco

    2017-01-01

    In order to distinguish the die and bond wire degradations, in this paper both the die and bond wire resistances of SiC MOSFET modules are measured and tested during the accelerated cycling tests. It is proved that, since the die degradation under specific conditions increases the temperature swing...

  18. Microestructura y propiedades mecánicas del SiC biomórfico obtenido a partir de eucalipto

    Directory of Open Access Journals (Sweden)

    Presas, M.

    2005-12-01

    Full Text Available The development of cellular ceramics with a biological structure, like bones and wood, has been a matter of interest in recent years. A low density highly interconnected structure, perfected by evolution, rises as the principal advantage of these materials. In the case of biomimetic SiC (biomorphic SiC, or bioSiC, the fabrication process technique is quite simple: a piece of wood is pyrolysed and is infiltrated with molten silicon after, the final product is a composite Si/SiC, which replicates the wood anisotropic microstructure This work focus on the mechanical properties of bioSiC fabricated using eucalyptus wood as precursor (hard wood with a bimodal channel distribution. It has been studied the mechanical behavior of this bioSiC (compression strength, flexure strength, fracture toughness and elastic modulus between 25 and 1350 oC. It is also discussed the relationship between mechanical behavior of the material and its microstructure.

    El desarrollo de materiales cerámicos con una estructura de tipo celular, similar a la del hueso o la madera, ha sido una cuestión que ha suscitado un gran interés en los últimos años. Su atractivo se debe al hecho de poseer una estructura porosa altamente interconectada de baja densidad, perfeccionada por la evolución. En el caso del SiC biomórfico (bio-SiC el proceso de fabricación es sencillo: se piroliza una pieza de madera y a continuación se inyecta con silicio líquido, el material así obtenido es un compuesto Si/SiC en el que el SiC mimetiza la estructura de la madera original. En este trabajo se estudian las propiedades mecánicas del SiC biomórfico fabricado a partir de eucalipto (madera dura con una distribución bimodal de poros. Se ha estudiado el comportamiento mecánico del mismo (resistencia a compresión, resistencia a flexión, tenacidad de fractura y módulo de elasticidad entre 25 y 1350 oC. Asimismo, se discute la relación entre el comportamiento mecánico del material y

  19. Conception d’un onduleur triphasé à base de composants SiC en technologie JFET à haute fréquence de commutation

    OpenAIRE

    Fonteneau, Xavier

    2014-01-01

    Since 2000, Silicon Carbide (SiC) components are available on the market mainly as Schottky diodes and FET transistor. These new devices provide better switching performance than Silicon (Si) components that leads to a reduction of losses and operating temperatures at equivalent cooling system. Using SiC components allows to a better converter integration. It is in this context that ECA-EN has started this thesis dedicated to using SiC devices in a three-phase inverter at high switching frequ...

  20. Acousto-electric transport in MgO/ZnO-covered graphene on SiC

    Science.gov (United States)

    Liou, Y.-T.; Hernández-Mínguez, A.; Herfort, J.; Lopes, J. M. J.; Tahraoui, A.; Santos, P. V.

    2017-11-01

    We investigate the acousto-electric transport induced by surface acoustic waves (SAWs) in epitaxial graphene (EG) coated by a MgO/ZnO film. The deposition of a thin MgO layer protects the EG during the sputtering of a piezoelectric ZnO film for the efficient generation of SAWs. We demonstrate by Raman and electric measurements that the coating does not harm the EG structural and electronic properties. We report the generation of two SAW modes with frequencies around 2 GHz. For both modes, we measure acousto-electric currents in EG devices placed in the SAW propagation path. The currents increase linearly with the SAW power, reaching values up to almost two orders of magnitude higher than in previous reports for acousto-electric transport in EG on SiC. Our results agree with the predictions from the classical relaxation model of the interaction between SAWs and a two dimensional electron gas.

  1. Anodized Ti3SiC2 As an Anode Material for Li-ion Microbatteries.

    Science.gov (United States)

    Tesfaye, Alexander T; Mashtalir, Olha; Naguib, Michael; Barsoum, Michel W; Gogotsi, Yury; Djenizian, Thierry

    2016-07-06

    We report on the synthesis of an anode material for Li-ion batteries by anodization of a common MAX phase, Ti3SiC2, in an aqueous electrolyte containing hydrofluoric acid (HF). The anodization led to the formation of a porous film containing anatase, a small quantity of free carbon, and silica. By varying the anodization parameters, various oxide morphologies were produced. The highest areal capacity was achieved by anodization at 60 V in an aqueous electrolyte containing 0.1 v/v HF for 3 h at room temperature. After 140 cycles performed at multiple applied current densities, an areal capacity of 380 μAh·cm(-2) (200 μA·cm(-2)) has been obtained, making this new material, free of additives and binders, a promising candidate as a negative electrode for Li-ion microbatteries.

  2. Solidification characteristics of atomized AlCu4Mg1-SiC composite powders

    Directory of Open Access Journals (Sweden)

    Yamanoglu R.

    2012-01-01

    Full Text Available In this study, rapidly solidified metal matrix composite powders have been produced by PREP (Plasma rotating electrode process atomization. AlCu4Mg1 alloy is used as the matrix material while SiC particles, with about 650 nm average particle size, are used as the reinforcement phase. The microstructural and solidification characteristics of composite particles are studied using optical and scanning electron microscope (SEM. The relationship between secondary dendrite arm spacing (SDAS and particle diameter was examined, and these composite powders were found to have dendritic and equiaxed solidification with a fine eutectic phase. SDAS measurements using various sized particles show that secondary dendrite arm spacing slightly decreases with the decrease in particle size.

  3. Experimental Studies on SiC and Rice Husk Ash Reinforced Al Alloy Composite

    Directory of Open Access Journals (Sweden)

    Shivaprakash Y. M.

    2018-01-01

    Full Text Available In this research work Aluminium alloy with Cu (4.5% as the major alloying element is used as the matrix in which SiC and Rice Husk Ash (RHA are dispersed to develop a hybrid composite. The dispersion is done by the motorized stir casting arrangement. The composite is fabricated by varying the proportions of the reinforcements in the base alloy. The composite specimens were tested for density changes, hardness and the wear. The microstructure images showed a uniform dispersion of the reinforcements in the matrix and this resulted in higher strength to weight ratio. The increase in strength of the composite is probably attributed to the increase in the dislocation density. Also, the abrasive wear resistance of the produced composite is found to be superior as compared to the matrix alloy because of the hard-ceramic particles in the reinforcements.

  4. Examining of abrasion resistance of hybrid composites reinforced with SiC and Cgr particles

    Directory of Open Access Journals (Sweden)

    M. Łągiewka

    2008-08-01

    Full Text Available The presented work discusses the influence of the type and volume percentage of particulate reinforcement consisting of mixed silicon carbide and graphite on the abrasion wear of hybrid composites with AlMg10 matrix. Also the macro photos of frictional surfaces have been shown and the results of hardness measurements have been presented. The performed examinations have allowed for stating that the mixture of SiC and Cgr particles changes in favour the tribological properties of the matrix alloy. It has been also proved that introducing hard reinforcing particles along with soft lubricating ones allows for achieving the material exhibiting high abrasion resistance, and moreover, the graphite particles protect the abraded surface from the destructive action of silicon carbide particles. Also hardness measurements have been performed and the resulting conclusion is that the composite hardness increases with an increase in volume fraction of the reinforcing particles.

  5. Optimization of Thermal Neutron Converter in SiC Sensors for Spectral Radiation Measurements

    Energy Technology Data Exchange (ETDEWEB)

    Krolikowski, Igor; Cetnar, Jerzy [Department of Nuclear Energy, Faculty of Energy and Fuels at AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Cracow (Poland); Issa, Fatima; Ferrone, Raffaello; Ottaviani, Laurent [IM2NP, UMR CNRS 7334, Aix-Marseille University, Case 231, 13397 Marseille Cedex 20 (France); Szalkai, Dora; Klix, Axel [KIT- Karlsruhe Institute of Technology, Institute of Neutron Physics and Reactor Technology, Karlsruhe 76344 (Germany); Vermeeren, Ludo [SCK-CEN, Boeretang 200, B-2400 Mol (Belgium); Lyoussi, Abdalla [CEA, DEN, DER, Instrumentation Sensors and Dosimetry Laboratory, Cadarache, F-13108 St-Paul-Lez-Durance (France); Saenger, Richard [Etudes et Productions Schlumberger, Clamart (France)

    2015-07-01

    Optimization of the neutron converter in SiC sensors is presented. The sensors are used for spectral radiation measurements of thermal and fast neutrons and optionally gamma ray at elevated temperature in harsh radiation environment. The neutron converter, which is based on 10B, allows to detect thermal neutrons by means of neutron capture reaction. Two construction of the sensors were used to measure radiation in experiments. Sensor responses collected in experiments have been reproduced by the computer tool created by authors, it allows to validate the tool. The tool creates the response matrix function describing the characteristic of the sensors and it was used for detailed analyses of the sensor responses. Obtained results help to optimize the neutron converter in order to increase thermal neutron detection. Several enhanced construction of the sensors, which includes the neutron converter based on {sup 10}B or {sup 6}Li, were proposed. (authors)

  6. Graphene etching on SiC grains as a path to interstellar polycyclic aromatic hydrocarbons formation.

    Science.gov (United States)

    Merino, P; Švec, M; Martinez, J I; Jelinek, P; Lacovig, P; Dalmiglio, M; Lizzit, S; Soukiassian, P; Cernicharo, J; Martin-Gago, J A

    2014-01-01

    Polycyclic aromatic hydrocarbons as well as other organic molecules appear among the most abundant observed species in interstellar space and are key molecules to understanding the prebiotic roots of life. However, their existence and abundance in space remain a puzzle. Here we present a new top-down route to form polycyclic aromatic hydrocarbons in large quantities in space. We show that aromatic species can be efficiently formed on the graphitized surface of the abundant silicon carbide stardust on exposure to atomic hydrogen under pressure and temperature conditions analogous to those of the interstellar medium. To this aim, we mimic the circumstellar environment using ultra-high vacuum chambers and investigate the SiC surface by in situ advanced characterization techniques combined with first-principles molecular dynamics calculations. These results suggest that top-down routes are crucial to astrochemistry to explain the abundance of organic species and to uncover the origin of unidentified infrared emission features from advanced observations.

  7. Electrical Parasitics and Thermal Modeling for Optimized Layout Design of High Power SiC Modules

    DEFF Research Database (Denmark)

    Bahman, Amir Sajjad; Blaabjerg, Frede; Dutta, Atanu

    2016-01-01

    The reliability of power modules is closely depended on their electrical and thermal behavior in operation. As power modules are built to operate more integrated and faster, the electrical parasitic and thermal stress issues become more critical. This paper investigates simplified thermal...... and parasitic inductance models of SiC power modules. These models can replace the models by Finite Element Methods (FEM) to predict temperatures and electrical parasitics of power modules with much faster speed and acceptable errors and will be used for study of real operation of power modules. As a case study......, the presented models are verified by a conventional and an optimized power module layout. The optimized layout is designed based on the reduction of stray inductance and temperature in a P-cell and N-cell half-bridge module. The presented models are verified by FEM simulations and also experiment....

  8. SiC heat pump converters with support for voltage unbalance in distribution grids

    DEFF Research Database (Denmark)

    Trintis, Ionut; Douglass, Philip; Maheshwari, Ramkrishan

    2015-01-01

    This paper studies the impact of involving the demand side of the LV grid into the grid conditioning process. Heat pumps are distribution loads with a substation capacity increase in the last years, with expectancy of growth in the coming years. Controlling the loads is the first step...... in the transition to smart grids, and heat pumps are to be the first promising smart loads. They can be used for load shedding but also for unbalance compensation purposes. When they are equipped with a back to back compressor drive and a proper control strategy, grid support can be provided to reduce the negative...... sequence component in the voltage at the installation point. Two control strategies are proposed and investigated experimentally on a SiC heat pump converter prototype....

  9. Comparison of the Tensile, Creep, and Rupture Strength Properties of Stoichiometric SiC Fibers

    Science.gov (United States)

    Yun, H. M.; DiCarlo, J. A.

    1999-01-01

    Tensile strength, creep strength, and rupture strength properties were measured for the following types of polymer-derived stoichiometric SiC fibers: Hi-Nicalon Type S from Nippon Carbon, Tyranno SA from Ube, and Sylramic from Dow Corning. Also included in this study were an earlier version of the SA fiber plus two recent developmental versions of the Sylramic fiber. The tensile strength measurements were made at room temperature on as-received fibers and on fibers after high-temperature inert exposure. The creep-rupture property data were obtained at 1400 deg C in air as well as, argon. Some fiber types showed strong effects of environment on their strength properties. These results are compared and discussed in terms of underlying mechanisms and implications for ceramic composites.

  10. Quantitative Analysis of Efficiency Improvement of a Propulsion Drive by Using SiC Devices: A Case of Study

    OpenAIRE

    Kundan Kumar; Manuele Bertoluzzo; Giuseppe Buja; Fernando Ortenzi

    2017-01-01

    One of the emerging research topics in the propulsion drive of the electric vehicles is the improvement in the efficiency of its component parts, namely, the propulsion motor and the associated inverter. This paper is focused on the efficiency of the inverter and analyzes the improvement that follows from the replacement of the silicon (Si) IGBT devices with silicon carbide (SiC) MOSFETs. To this end, the paper starts by deriving the voltage-current solicitations of the inverter over the work...

  11. Growth of high-quality cubic GaN on Si (0 0 1) coated with ultra-thin flat SiC by plasma-assisted molecular-beam epitaxy

    Science.gov (United States)

    Wang, D.; Hiroyama, Y.; Tamura, M.; Ichikawa, M.; Yoshida, S.

    2000-06-01

    Cubic GaN films were grown on Si (0 0 1) coated with an ultra-thin flat SiC buffer layer under both Ga-rich and N-rich conditions. The SiC buffer layer (thickness of about 2.5 nm) was grown by carbonization of Si (0 0 1) substrates in C 2H 2 (pressure of 5×10 -6 Torr) at 970°C. The GaN films prepared under the Ga-rich condition had a local atomically smooth surface. High-resolution transmission electron microscopy (TEM) showed that the main defects in the GaN films are stacking faults along the [ 1 1¯ 1> ] and [ 1 1¯ 1> 1 ] directions. Plan-view TEM showed that the dislocation density within grains was much lower than the overall dislocation density in the GaN films. The dislocation density within grains was about 4×10 5 cm -2. X-ray diffraction (XRD) and TEM showed that the GaN films had a mosaic structure. The full-width at half-maximum of the (0 0 2) XRD peak of a 0.82-μm-thick film was 19 min, one of the lowest values reported so far for cubic GaN films. And the GaN films prepared under both Ga-rich and N-rich conditions showed a strong near-band-edge photoluminescence. Yellow-band luminescence and donor-acceptor recombination peaks were also detected when the GaN films contained more extended defects and/or native-point defects.

  12. Effect of preceramic and Zr coating on impregnation behaviors of SiC ceramic composite

    Science.gov (United States)

    Jung, Yang-Il; Kim, Sun-Han; Kim, Hyun-Gil; Park, Jeong-Yong; Koo, Yang-Hyun

    2015-01-01

    SiC fiber-reinforced ceramic composites were fabricated using a polymer impregnation and pyrolysis process. To develop the low temperature process, the pyrolysis was conducted at 600 °C in air. Both a microstructural observation and a mechanical test were utilized for the evaluation of the impregnation. For the impregnation, two kinds of polycarbosilane having a different degree of cross-linking were used. The level of cross-linking affected the ceramic yield of the composites. The cross-linking under oxygen containing atmosphere resulted in a dense matrix and high density of filling. However, tight bonding between the matrix and fibers in the fully dense composite samples, which was obtained using a cross-linking agent of divinylbenzene, turned out to be deteriorative on the mechanical properties. The physical isolation of fibers from matrix phase in the composites was very important to attain a mechanical ductility. The brittle fracture was alleviated by introducing an interphase coating with metallic Zr. The combination of forming the dense matrix and interphase coating should be a necessary condition for the SiCf/SiC fiber-reinforce composite, and it is practicable by controlling the process parameters.

  13. Tensile creep and stress-rupture behavior of polymer derived SiC fibers

    Energy Technology Data Exchange (ETDEWEB)

    Yun, H.M.; Goldsby, J.C.; DiCarlo, J.A. [NASA Lewis Research Center, Cleveland, OH (United States)

    1994-12-31

    Tensile creep and stress-rupture studies were conducted on polymer derived Nicalon, Hi-Nicalon, and SiC/BN-coated Nicalon SiC fibers. Test conditions were temperatures from 1200 to 1400{degrees}C, stresses from 100 to 1600 MPa, stress application times up to 200 hours, and air, argon, and vacuum test environments. For all fibers, creep occurred predominantly in the primary stage. Hi-Nicalon had much higher 0.2 and 1% creep strengths than as-produced as well as coated Nicalon fibers. The stress-rupture strength of Hi-Nicalon up to 100 hours was also higher than that of the coated and as-produced Nicalon fibers. SiC/BN coating on Nicalon increased only the short-term low-temperature rupture strength. Limited testing in argon and vacuum suggests that for all fiber types, creep and rupture resistances are reduced in comparison to the results in air. Possible mechanisms for the observed behavior are discussed.

  14. CW blue-green light emission from GaN and SiC by sum-frequency generation and second harmonic generation

    Science.gov (United States)

    Chao, L. C.; Steckl, A. J.

    2000-09-01

    Continuous wave (CW) back-scattered sum-frequency generation (SFG) and second harmonic generation (SHG) have been obtained from GaN and SiC. GaN samples were obtained from GaN films grown by molecular-beam epitaxy (MBE), metalorganic chemical-vapor deposition and hydride vapor-phase epitaxy. The SiC samples were obtained from 3C SiC/Si grown by chemical vapor deposition (CVD), 4H and 6H single crystal SiC substrates. The samples were optically excited with two CW lasers at the red (840 nm) and the infrared (1.0 µm). SHG at 420 nm and 500 nm and SFG at 455 nm were observed. SFG and SHG were verified by measuring their relative intensities against the pumping laser power. The SHG signals from GaN and SiC samples are compared with that from KH2PO4 (KDP).

  15. Photon absorption and emission properties of 7 Å SiC nanoclusters: Electronic gap, surface state, and quantum size effect

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Xiaoxiao; Chen, Xifang; Fan, Baolu; Zhang, Yumeng; Fan, Jiyang, E-mail: jyfan@seu.edu.cn [Department of Physics and Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University, Nanjing 211189 (China)

    2016-07-04

    People know little experimentally about the physical properties of the SiC nanoclusters with sizes of a couple of angstroms. Herein, we study the electronic structure and light absorption/emission properties of the SiC nanoclusters with an average diameter of 7 Å that are fabricated by diminishing the sizes of the SiC microcrystals under high pressure and high temperature. The results reveal that the SiC nanoclusters have an indirect energy gap of 5.1 eV. Unlike the case of larger SiC nanocrystals, the luminescence of the SiC nanoclusters is dominated by two types of oxygen-related surface defects, and the maximum of their photoluminescence/photoluminescence excitation spectrum lies at 4.1/3.3 and 3.8/3.0 eV, respectively. The energy gap of the SiC nanoparticles with reference to bulk value is found to be inversely proportional to the diameter to the power 0.97, which shows slower increase of energy gap with decreasing size than what is predicted by using the first-principles calculations.

  16. Residual stress analysis in carbon fiber-reinforced SiC ceramics; Eigenspannungsanalyse in kohlenstoffaserverstaerkten SiC-Keramiken

    Energy Technology Data Exchange (ETDEWEB)

    Broda, M.

    1998-12-31

    Systematic residual stress analyses are reported, carried out in long-fiber reinforced SiC ceramics. The laminated C{sub fiber}/SiC{sub matrix} specimens used were prepared by polymer pyrolysis, and the structural component specimens used are industrial products. Various diffraction methods have been applied for non-destructive evaluation of residual stress fields, so as to completely detect the residual stresses and their distribution in the specimens. The residual stress fields at the surface ({mu}m) have been measured using characteristic X-radiation and applying the sin {sup 2}{psi} method as well as the scatter vector method. For residual stress field analysis in the mass volume (cm), neutron diffraction has been applied. The stress fields in the fiber layers (approx. 250{mu}m) have been measured as a function of their location within the laminated composite by using an energy-dispersive method and synchrotron radiation. By means of the systematic, process-accompanying residual stress and phase analyses, conclusions can be drawn as to possible approaches for optimization of fabrication parameters. (orig./CB) [Deutsch] Im Rahmen der Arbeit werden systematische Eigenspannungsanalysen an langfaserverstaerkten SiC-Keramiken durchgefuehrt. Hierbei werden polymerpyrolytisch abgeleitete, laminierte C{sub Faser}/SiC{sub Matrix} Proben und Bauteile untersucht, welche industriell gefertigt wurden. Fuer die zerstoerungsfreie Eigenspannungsermittlung kommen verschiedene Beugungsverfahren zum Einsatz. Dadurch kann die Eigenspannungsverteilung in diesen Proben vollstaendig erfasst werden, d.h. der Eigenspannungszustand im Oberflaechenbereich ({mu}m) wird mit Hilfe charakteristischer Roentgenstrahlung unter Nutzung der sin{sup 2}{psi}-Methode als auch der Streuvektor-Methode beschrieben. Fuer die Analyse der Eigenspannungen im Volumen (cm) wird die Neutronenbeugung herangezogen. Um den Spannungszustand in den einzelnen Fasermatten (ca. 250 {mu}m) in Abhaengigkeit ihrer Lage

  17. 71 W (19.7 W/mm) SiC BJTs for long-pulse UHF radar applications

    Science.gov (United States)

    Zhao, Feng

    2009-11-01

    In this paper, we present 71 W SiC bipolar junction transistors (BJTs) using state of the art technology. The devices were fabricated on a commercial n-type 4H-SiC substrate using a double-mesa etch and interdigitated emitter-base finger design. When operating under common-emitter configuration and long pulse RF conditions of 15 ms pulse width and 25% duty cycle, the packaged devices without internal matching exhibited 8.5 dB power gain and 71 W output power with a 50.7% power added efficiency (PAE) at 500 MHz. The power density is 19.7 W/mm normalized to total emitter finger length. The normally-off characteristic and superior long pulse RF performance makes these SiC transistors promising for use in compact power amplifiers in long-pulse UHF radar systems.

  18. Experimental and simulation studies of neutron-induced single-event burnout in SiC power diodes

    Science.gov (United States)

    Shoji, Tomoyuki; Nishida, Shuichi; Hamada, Kimimori; Tadano, Hiroshi

    2014-01-01

    Neutron-induced single-event burnouts (SEBs) of silicon carbide (SiC) power diodes have been investigated by white neutron irradiation experiments and transient device simulations. It was confirmed that a rapid increase in lattice temperature leads to formation of crown-shaped aluminum and cracks inside the device owing to expansion stress when the maximum lattice temperature reaches the sublimation temperature. SEB device simulation indicated that the peak lattice temperature is located in the vicinity of the n-/n+ interface and anode contact, and that the positions correspond to a hammock-like electric field distribution caused by the space charge effect. Moreover, the locations of the simulated peak lattice temperature agree closely with the positions of the observed destruction traces. Furthermore, it was theoretically demonstrated that the period of temperature increase of a SiC power device is two orders of magnitude less than that of a Si power device, using a thermal diffusion equation.

  19. Pressureless sintering behavior and mechanical properties of ZrB2–SiC composites: effect of SiC content and particle size

    National Research Council Canada - National Science Library

    Mashhadi, Mehri; Khaksari, Hamid; Safi, Saeed

    2015-01-01

    ...), equipped with EDS spectroscopy. Both mass fraction and size of SiC powder have a great effect on relative density, porosity, shrinkage, hardness and microstructure of these composites. The highest relative density and hardness were 98.12% and 15.02 GPa, respectively, in ZrB2–10 wt% SiCnano composite sintered at 2200 °C.

  20. Room temperature luminescence properties of fluorescent SiC as white light emitting diode medium

    Energy Technology Data Exchange (ETDEWEB)

    Sun, J.W., E-mail: jianwusun@gmail.com [Department of Physics, Chemistry and Biology, Linkoeping University, 581 83 Linkoeping (Sweden); Jokubavicius, V.; Liljedahl, R.; Yakimova, R. [Department of Physics, Chemistry and Biology, Linkoeping University, 581 83 Linkoeping (Sweden); Juillaguet, S. [Universite Montpellier 2, Laboratoire Charles Coulomb UMR 5221, F-34095, Montpellier (France); Camassel, J. [CNRS, Laboratoire Charles Coulomb UMR 5221, F-34095, Montpellier (France); Kamiyama, S. [Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku, Nagoya 468-8502 (Japan); Syvaejaervi, M. [Department of Physics, Chemistry and Biology, Linkoeping University, 581 83 Linkoeping (Sweden)

    2012-11-01

    The high quantum efficiency of donor-acceptor-pair emission in N and B co-doped 6H-SiC opens the way for SiC to constitute as an efficient light-emitting medium for white light-emitting diodes. In this work, we evidence room temperature luminescence in N and B co-doped 6H-SiC fluorescent material grown by the Fast Sublimation Growth Process. Three series of samples, with eight different N and B doping levels, were investigated. In most samples, from photoluminescence measurements a strong N-B donor-acceptor-pair emission band was observed at room temperature, with intensity dependent on the nitrogen pressure in the growth chamber and boron doping level in the source. Low temperature photoluminescence spectra showed that N bound exciton peaks exhibited a continuous broadening with increasing N{sub 2} pressure during the growth, unambiguously indicating an opportunity to control the N doping in the epilayer by conveniently changing the N{sub 2} pressure. Finally, the crystal quality of the N and B doped 6H-SiC was evaluated by X-ray diffraction measurements. The {omega} rocking curves of (0006) Bragg diffractions from the samples grown with lower and higher N{sub 2} pressure show almost the same value of the full width at half maximum as that collected from the substrate. This suggests that the N and B doping, which is expected to give rise to an efficient donor-acceptor-pair emission at room temperature, does not degrade the crystal quality.

  1. SiC Nanowires Synthesized by Rapidly Heating a Mixture of SiO and Arc-Discharge Plasma Pretreated Carbon Black

    Directory of Open Access Journals (Sweden)

    Wang Feng-Lei

    2008-01-01

    Full Text Available Abstract SiC nanowires have been synthesized at 1,600 °C by using a simple and low-cost method in a high-frequency induction furnace. The commercial SiO powder and the arc-discharge plasma pretreated carbon black were mixed and used as the source materials. The heating-up and reaction time is less than half an hour. It was found that most of the nanowires have core-shell SiC/SiO2nanostructures. The nucleation, precipitation, and growth processes were discussed in terms of the oxide-assisted cluster-solid mechanism.

  2. SiC Nanowires Synthesized by Rapidly Heating a Mixture of SiO and Arc-Discharge Plasma Pretreated Carbon Black

    OpenAIRE

    Wang Feng-Lei; Zhang Li-Ying; Zhang Ya-Fei

    2008-01-01

    Abstract SiC nanowires have been synthesized at 1,600 °C by using a simple and low-cost method in a high-frequency induction furnace. The commercial SiO powder and the arc-discharge plasma pretreated carbon black were mixed and used as the source materials. The heating-up and reaction time is less than half an hour. It was found that most of the nanowires have core-shell SiC/SiO2nanostructures. The nucleation, precipitation, and growth processes were discussed in terms of the oxide-assis...

  3. Electrical properties of SiO{sub 2}/SiC interfaces on 2°-off axis 4H-SiC epilayers

    Energy Technology Data Exchange (ETDEWEB)

    Vivona, M., E-mail: marilena.vivona@imm.cnr.it [CNR-IMM, Strada VIII, n. 5 – Zona Industriale, I-95121 Catania (Italy); Fiorenza, P. [CNR-IMM, Strada VIII, n. 5 – Zona Industriale, I-95121 Catania (Italy); Sledziewski, T.; Krieger, M. [Friedrich-Alexander-University (FAU) Erlangen-Nuremberg, Department of Physics, Staudtstrasse 7/Bld. A3, D-91058 Erlangen (Germany); Chassagne, T.; Zielinski, M. [NOVASiC, Savoie Technolac, BP267, F-73375 Le Bourget-du-Lac Cedex (France); Roccaforte, F. [CNR-IMM, Strada VIII, n. 5 – Zona Industriale, I-95121 Catania (Italy)

    2016-02-28

    Graphical abstract: - Highlights: • Processing and electrical characterization of MOS capacitors fabricated on 4H-SiC epilayers grown on 2°-off axis heavily doped substrates. • Excellent characteristics of the SiO{sub 2}/4H-SiC interface in terms of flatness, interface state density and oxide reliability. • Electrical behavior of the MOS devices comparable with that obtained for the state-of-the-art of 4°-off axis 4H-SiC material. • Demonstration of the maturity of the 2°-off axis material for application in 4H-SiC MOSFET device technology. - Abstract: In this paper, the electrical properties of the SiO{sub 2}/SiC interface on silicon carbide (4H-SiC) epilayers grown on 2°-off axis substrates were studied. After epilayer growth, chemical mechanical polishing (CMP) allowed to obtain an atomically flat surface with a roughness of 0.14 nm. Metal-oxide-semiconductor (MOS) capacitors, fabricated on this surface, showed an interface state density of ∼1 × 10{sup 12} eV{sup −1} cm{sup −2} below the conduction band, a value which is comparable to the standard 4°-off-axis material commonly used for 4H-SiC MOS-based device fabrication. Moreover, the Fowler–Nordheim and time-zero-dielectric breakdown analyses confirmed an almost ideal behavior of the interface. The results demonstrate the maturity of the 2°-off axis material for 4H-SiC MOSFET device fabrication.

  4. Tribological Behavior of Si3N4/Ti3SiC2 Contacts Lubricated by Lithium-Based Ionic Liquids

    Directory of Open Access Journals (Sweden)

    Haizhong Wang

    2014-01-01

    Full Text Available The tribological performance of Si3N4 ball sliding against Ti3SiC2 disc lubricated by lithium-based ionic liquids (ILs was investigated using an Optimol SRV-IV oscillating reciprocating friction and wear tester at room temperature (RT and elevated temperature (100°C. Glycerol and the conventional imidazolium-based IL 1-hexyl-3-methylimidazolium bis(trifluoromethylsulfonylimide (L-F106 were used as references under the same experimental conditions. The results show that the lithium-based ILs had higher thermal stabilities than glycerol and lower costs associated with IL preparation than L-F106. The tribotest results show that the lithium-based ILs were effective in reducing the friction and wear of Si3N4/Ti3SiC2 contacts. [Li(urea]TFSI even produced better tribological properties than glycerol and L-F106 both at RT and 100°C. The SEM/EDS and XPS results reveal that the excellent tribological endurance of Si3N4/Ti3SiC2 contacts lubricated by lithium-based ILs was mainly attributed to the formation of surface protective films composed of various tribochemical products.

  5. Effect of SiC weight percentage on tribological properties of Al-SiC metal matrix composites under acid environment

    Directory of Open Access Journals (Sweden)

    Smrutiranjan Pradhan

    2017-06-01

    Full Text Available In this paper, Al-SiC MMCs reinforced with different weight percentages of SiC content (5 wt.%, 7.5 wt.% and 10 wt.% are fabricated through the liquid stir casting method. The effect of weight percentage of SiC on friction and wear properties of Al-SiC MMC is investigated. Tribological tests are conducted under acid environment in a pin-on-disk tribotester by varying the design parameters (applied normal load and sliding speed while the duration of each experiment is kept constant for 30 minutes. It is seen from the result that wear increases with increase in applied load and sliding speed but friction coefficient shows a decreasing trend with increase in load. The addition of SiC reinforcement increases the wear resistance of the metal matrix composite. The scanning electron microscope (SEM and energy dispersive X-Ray (EDX technique are used to analyse the wear mechanism of worn surface. From the microstructure study, it is seen that adhesive, abrasive and corrosive wear mechanisms are present for removal of material from the Al-SiC MMCs.

  6. Improvement in Contact Strength of Si3N4/SiC Composite by Crack Healing

    Directory of Open Access Journals (Sweden)

    Koji Takahashi

    2013-01-01

    Full Text Available Ceramics have been used as bearing and cutting tool components, which are subjected to contact loading during their operation. The presence of surface cracks on these components decreases their contact strength. Thus, the reliability of ceramic components can be increased by improving their contact strength through crack healing. In the present study, the effects of crack healing on the contact strength of a silicon carbide-(SiC- reinforced silicon nitride (Si3N4 composite subjected to various machining processes were investigated. The contact strength of this composite was evaluated using a sphere indentation test in which acoustic emission was used. The results showed that the contact strength of the composite improved when it was subjected to crack healing in combination with rapping; this was true even when the composite had cracks due to a heavy machining process.

  7. Effects of SiC nanoparticles orally administered in a rat model: Biodistribution, toxicity and elemental composition changes in feces and organs

    Energy Technology Data Exchange (ETDEWEB)

    Lozano, Omar, E-mail: omar.lozanogarcia@fundp.ac.be [Namur Nanosafety Center (NNC), NAmur Research Institute for LIfe Sciences (NARILIS), University of Namur - FUNDP, Rue de Bruxelles 61, B-5000 Namur (Belgium); Research Centre for the Physics of Matter and Radiation (PMR-LARN), University of Namur (FUNDP), Rue de Bruxelles 61, B-5000 Namur (Belgium); Laloy, Julie; Alpan, Lütfiye [Namur Nanosafety Center (NNC), NAmur Research Institute for LIfe Sciences (NARILIS), University of Namur - FUNDP, Rue de Bruxelles 61, B-5000 Namur (Belgium); Department of Pharmacy, NAMEDIC, Namur Thrombosis and Hemostasis Center (NTHC), University of Namur (FUNDP), Rue de Bruxelles 61, B-5000 Namur (Belgium); Mejia, Jorge [Namur Nanosafety Center (NNC), NAmur Research Institute for LIfe Sciences (NARILIS), University of Namur - FUNDP, Rue de Bruxelles 61, B-5000 Namur (Belgium); Research Centre for the Physics of Matter and Radiation (PMR-LARN), University of Namur (FUNDP), Rue de Bruxelles 61, B-5000 Namur (Belgium); Rolin, Stéphanie [Namur Nanosafety Center (NNC), NAmur Research Institute for LIfe Sciences (NARILIS), University of Namur - FUNDP, Rue de Bruxelles 61, B-5000 Namur (Belgium); Department of Pharmacy, NAMEDIC, Namur Thrombosis and Hemostasis Center (NTHC), University of Namur (FUNDP), Rue de Bruxelles 61, B-5000 Namur (Belgium); Toussaint, Olivier [Namur Nanosafety Center (NNC), NAmur Research Institute for LIfe Sciences (NARILIS), University of Namur - FUNDP, Rue de Bruxelles 61, B-5000 Namur (Belgium); Laboratory of Biochemistry and Cellular Biology (URBC), University of Namur (FUNDP), Rue de Bruxelles 61, B-5000 Namur (Belgium); Dogné, Jean-Michel [Namur Nanosafety Center (NNC), NAmur Research Institute for LIfe Sciences (NARILIS), University of Namur - FUNDP, Rue de Bruxelles 61, B-5000 Namur (Belgium); Department of Pharmacy, NAMEDIC, Namur Thrombosis and Hemostasis Center (NTHC), University of Namur (FUNDP), Rue de Bruxelles 61, B-5000 Namur (Belgium); and others

    2012-10-15

    Background: Silicon carbide (SiC) presents noteworthy properties as a material such as high hardness, thermal stability, and photoluminescent properties as a nanocrystal. However, there are very few studies in regard to the toxicological potential of SiC NPs. Objectives: To study the toxicity and biodistribution of silicon carbide (SiC) nanoparticles in an in vivo rat model after acute (24 h) and subacute (28 days) oral administrations. The acute doses were 0.5, 5, 50, 300 and 600 mg·kg{sup −1}, while the subacute doses were 0.5 and 50 mg·kg{sup −1}. Results: SiC biodistribution and elemental composition of feces and organs (liver, kidneys, and spleen) have been studied by Particle-Induced X-ray Emission (PIXE). SiC and other elements in feces excretion increased by the end of the subacute assessment. SiC did not accumulate in organs but some elemental composition modifications were observed after the acute assessment. Histopathological sections from organs (stomach, intestines, liver, and kidneys) indicate the absence of damage at all applied doses, in both assessments. A decrease in the concentration of urea in blood was found in the 50 mg·kg{sup −1} group from the subacute assessment. No alterations in the urine parameters (sodium, potassium, osmolarity) were found. Conclusion: This is the first study that assesses the toxicity, biodistribution, and composition changes in feces and organs of SiC nanoparticles in an in vivo rat model. SiC was excreted mostly in feces and low traces were retrieved in urine, indicating that SiC can cross the intestinal barrier. No sign of toxicity was however found after oral administration. -- Highlights: ► SiC nanoparticles were orally administered to rats in acute and subacute doses. ► SiC was found in low traces in urine. It is mostly excreted in feces within 5 days. ► SiC excretion rate, feces and organ elemental composition change with time. ► No morphological alteration were found on GI tract, liver, kidneys

  8. Short-circuit ruggedness assessment of a 1.2 kV/180 A SiC MOSFET power module

    DEFF Research Database (Denmark)

    Ionita, Claudiu; Nawaz, Muhammad; Ilves, Kalle

    2017-01-01

    While investigations on short-circuit ruggedness of discrete SiC MOSFET are widely encountered in the scientific literature, there is not so much research dealing with the operational robustness of high power SiC MOSFET modules. In this paper, the short-circuit (SC) ruggedness under hard switching...... fault (HSF) of a commercial 1.2 kV/180 A SiC MOSFET power module in half-bridge configuration will be presented. The test conditions, such as DC-link voltage (VDC), gate resistance (Rg) and gate-source supply voltage (VGS) are varied systematically to investigate the effect of these parameters...

  9. Topological Dirac States beyond π-Orbitals for Silicene on SiC(0001) Surface.

    Science.gov (United States)

    Li, Ping; Li, Xiao; Zhao, Wei; Chen, Hua; Chen, Ming-Xing; Guo, Zhi-Xin; Feng, Ji; Gong, Xin-Gao; MacDonald, Allan H

    2017-10-11

    The discovery of intriguing properties related to the Dirac states in graphene has spurred huge interest in exploring its two-dimensional group-IV counterparts, such as silicene, germanene, and stanene. However, these materials have to be obtained via synthesizing on substrates with strong interfacial interactions, which usually destroy their intrinsic π(pz)-orbital Dirac states. Here we report a theoretical study on the existence of Dirac states arising from the px,y orbitals instead of pz orbitals in silicene on 4H-SiC(0001), which survive in spite of the strong interfacial interactions. We also show that the exchange field together with the spin-orbital coupling give rise to a detectable band gap of 1.3 meV. Berry curvature calculations demonstrate the nontrivial topological nature of such Dirac states with a Chern number C = 2, presenting the potential of realizing quantum anomalous Hall effect for silicene on SiC(0001). Finally, we construct a minimal effective model to capture the low-energy physics of this system. This finding is expected to be also applicable to germanene and stanene and imply great application potentials in nanoelectronics.

  10. Tuning a zigzag SiC nanoribbon as a thermal spin current generator

    Science.gov (United States)

    Jiang, Peng; Tao, Xixi; Hao, Hua; Song, Lingling; Zheng, Xiaohong; Zhang, Lei; Zeng, Zhi

    2017-09-01

    Quantum transport and spin current in a zigzag SiC nanoribbon device under a thermal gradient are investigated theoretically within the framework of the Landauer-Büttiker formalism using a first-principles technique. It is found that the edge state transport channels can be turned off or kept open by specific edge doping, and different spin channels can be controlled separately. Interestingly, by replacing an edge C atom with a B atom and an edge Si atom with a P atom in the scattering region, a Seebeck thermopower with different signs for different spins and a finite conductance for both spins can be obtained in the linear response regime. The subsequent thermoelectric field drives electrons of different spin channels in opposite directions, which leads unambiguously to a spin current. More importantly, by tuning the chemical potential and working temperature, pure spin current can be achieved. This provides a promising two-dimensional candidate system for producing pure spin current via the spin-dependent Seebeck effect.

  11. Three-fold diffraction symmetry in epitaxial graphene and the SiC substrate

    Energy Technology Data Exchange (ETDEWEB)

    Siegel, D A; Zhou, S Y; El Gabaly, F; Schmid, A K; McCarty, K F; Lanzara, A

    2009-12-10

    The crystallographic symmetries and spatial distribution of stacking domains in graphene films on 6H-SiC(0001) have been studied by low energy electron diffraction (LEED) and dark field imaging in a low energy electron microscope (LEEM). We find that the graphene diffraction spots from 2 and 3 atomic layers of graphene have 3-fold symmetry consistent with AB (Bernal or rhombohedral) stacking of the layers. On the contrary, graphene diffraction spots from the buffer layer and monolayer graphene have apparent 6-fold symmetry, although the 3-fold nature of the satellite spots indicates a more complex periodicity in the graphene sheets.

  12. ZrB2-SiC as a protective coating for C/SiC composites: Effect of high temperature oxidation on thermal shock property and protection mechanism

    Directory of Open Access Journals (Sweden)

    Xiang Yang

    2016-06-01

    Full Text Available ZrB2-SiC coating was prepared on C/SiC composites surface by slurry method, and then the thermal fatigue behavior of ZrB2-SiC coated C/SiC composites was studied. The composition of the coating layers was characterized by XRD, SEM and EDS. With the thickness was 200 μm, the coating was ZrB2 and SiC. During thermal cycle between 1773 K in air and 373 K in boiling water, the weight of the ZrB2-SiC coated composites decreased lightly. The decrease of the flexural strength during the thermal cycle was primarily due to the debonding of the fiber–matrix interfaces and the oxidation of the coated samples. Compared with the uncoated C/SiC composites, the coating played an important role in enhancing the resistance to the thermal shock.

  13. Aplicaciones del SiC biomórfico como reforzante estructural en hormigones refractarios

    Directory of Open Access Journals (Sweden)

    Sepúlveda, R.

    2005-10-01

    Full Text Available This work is devoted to the study of the time and temperature dependence of the static grain growth in YTZP 4 mol %, with an average grain size within the submicrometric range (> 0.1 μm. Also, the mechanical response in the temperature interval between 1200 ºC and 1500 ºC is analysed. The grain growth is controlled by the yttria segregation at the grain boundaries, which plays a key role in the cationic diffusion processes. Microstructural characterization of both as-received and deformed samples allows to conclude that plastic deformation is due to grain boundary sliding (GBS, with stress exponents increasing with the flow stress, but in all cases they are lower than n = 2.

    Una posible aplicación del SiC biomórfico (bioSiC son los reforzante estructural en hormigones refractarios. En este caso se han fabricado piezas de bioSiC con forma de cilindros alargados, 3-4 mm de diámetro y 30-35 mm de longitud, mediante infiltración reactiva de Si líquido en piezas de carbón obtenidas por pirolización de madera de haya de calidad comercial. Hemos estudiado las características microestructurales y las propiedades mecánicas de los reforzantes, como paso previo al estudio de la aplicación mencionada, de la que se ofrece un avance en este trabajo. Para caracterizar la calidad del material y del proceso de fabricación, la microestructura de las piezas se ha estudiado mediante microscopía electrónica de barrido. Los reforzantes de bioSiC fueron ensayados a compresión uniaxial y flexión en cuatro puntos a temperatura ambiente y a alta temperatura (1250-1400ºC para la determinación de sus propiedades mecánicas, y se realizaron estudios fractográficos en el segundo tipo de ensayos. Subsecuentemente, se prepararon ladrillos refractarios con un 3% en peso de reforzantes de bioSiC, que fueron curados a diferentes temperaturas (máx. 1600ºC. Estos ladrillos se han ensayado en compresión y flexión en tres puntos, a temperatura ambiente

  14. Effect of an Ag buffer layer on a Cu/Ag/Si system

    Energy Technology Data Exchange (ETDEWEB)

    Yukawa, M.; Kitagawa, H.; Iida, S

    2004-10-15

    It is well known that Cu reacts with Si to form copper silicide, even at room temperature. To prevent copper silicide from forming on an Si substrate when Cu is used for wiring or as electrodes, it is necessary to place a buffer layer between Cu and the Si substrate. Silver works as a buffer layer between Cu and the Si substrate to form a layered Cu/Ag/Si structure. In the present paper, we determine the minimum effective Ag buffer layer thickness to prevent Cu diffusing into the Si substrate. The results show that Cu can reach the Si substrate through a 5 nm thick Ag film, but that a 50 nm film prevents Cu from diffusing through to the Si substrate. Using scanning electron microscopy (SEM) to observe the interface layer, it was found that round Ag islands form on the Si substrate, whereas Cu appears as a few large square islands and a lot of small clusters. The small Cu clusters tended to wedge into the gaps between the Ag islands. Furthermore, the results indicate that Cu and Ag repel each other.

  15. An optically controlled SiC lateral power transistor based on SiC/SiCGe super junction structure

    Energy Technology Data Exchange (ETDEWEB)

    Pu Hongbin; Cao Lin; Ren Jie; Chen Zhiming; Nan Yagong, E-mail: puhongbin@xaut.edu.c [Xi' an University of Technology, Xi' an 710048 (China)

    2010-04-15

    An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 {mu}m and 0.7 {mu}m are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively. (semiconductor devices)

  16. Position-dependent and millimetre-range photodetection in phototransistors with micrometre-scale graphene on SiC

    Science.gov (United States)

    Sarker, Biddut K.; Cazalas, Edward; Chung, Ting-Fung; Childres, Isaac; Jovanovic, Igor; Chen, Yong P.

    2017-07-01

    The extraordinary optical and electronic properties of graphene make it a promising component of high-performance photodetectors. However, in typical graphene-based photodetectors demonstrated to date, the photoresponse only comes from specific locations near graphene over an area much smaller than the device size. For many optoelectronic device applications, it is desirable to obtain the photoresponse and positional sensitivity over a much larger area. Here, we report the spatial dependence of the photoresponse in backgated graphene field-effect transistors (GFET) on silicon carbide (SiC) substrates by scanning a focused laser beam across the GFET. The GFET shows a nonlocal photoresponse even when the SiC substrate is illuminated at distances greater than 500 µm from the graphene. The photoresponsivity and photocurrent can be varied by more than one order of magnitude depending on the illumination position. Our observations are explained with a numerical model based on charge transport of photoexcited carriers in the substrate.

  17. Rapid degradation of azo dye Direct Black BN by magnetic MgFe{sub 2}O{sub 4}-SiC under microwave radiation

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Jia; Yang, Shaogui, E-mail: yangsg@nju.edu.cn; Li, Na; Meng, Lingjun; Wang, Fei; He, Huan; Sun, Cheng

    2016-08-30

    Highlights: • MgFe{sub 2}O{sub 4}-SiC was first successfully synthesized. • MgFe{sub 2}O{sub 4}-SiC attained the maximum absorbing value of 13.32 dB at 2.57 GHz, which reached extremely high RL value at low frequency range. • Fast decolorization and high TOC removal of azo dye Direct Black BN with complicated structure could occur with MgFe{sub 2}O{sub 4}-SiC under MW radiation. • MgFe{sub 2}O{sub 4}-SiC had better MW absorbing property and higher MW catalytic activity than MnFe{sub 2}O{sub 4}-SiC under the same condition. • MgFe{sub 2}O{sub 4}-SiC was of practical use in the wastewater treatment. - Abstract: A novel microwave (MW) catalyst, MgFe{sub 2}O{sub 4} loaded on SiC (MgFe{sub 2}O{sub 4}-SiC), was successfully synthesized by sol-gel method, and pure MgFe{sub 2}O{sub 4} was used as reference. The MgFe{sub 2}O{sub 4} and MgFe{sub 2}O{sub 4}-SiC catalysts were characterized by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), N{sub 2} adsorption analyzer (BET specific surface area), X-ray photoelectron spectroscopy (XPS). The electromagnetic parameters of the prepared catalysts were measured by vector network analyzer. The reflection loss (RL) based on the electromagnetic parameters calculated in Matlab showed MgFe{sub 2}O{sub 4}-SiC attained the maximum absorbing value of 13.32 dB at 2.57 GHz, which reached extremely high RL value at low frequency range, revealing the excellent MW absorption property of MgFe{sub 2}O{sub 4}-SiC. MW-induced degradation of Direct Black BN (DB BN) over as-synthesized MgFe{sub 2}O{sub 4}-SiC indicated that degradation efficiency of DB BN (20 mg L{sup −1}) in 5 min reached 96.5%, the corresponding TOC removal was 65%, and the toxicity of DB BN after degradation by MgFe{sub 2}O{sub 4}-SiC obviously decreased. The good stability and applicability of MgFe{sub 2}O{sub 4}-SiC on the degradation process were also discovered. Moreover, the ionic chromatogram during degradation

  18. Integrated SiC Super Junction Transistor-Diode Devices for High-Power Motor Control ModulesOoperating at 500 C Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Monolithic Integrated SiC Super Junction Transistor-JBS diode (MIDSJT) devices are used to construct 500

  19. Tribological Properties of Ni3Al Matrix Composite Sliding Against Si3N4, SiC and Al2O3 at Elevated Temperatures

    Science.gov (United States)

    Yan, Chengqi; Kang, Yonghai; Kong, Lingqian; Zhu, Shengyu

    2017-01-01

    The Ni3Al matrix self-lubricating composite was fabricated by powder metallurgy technique. The tribological behavior of the composite sliding against commercial Si3N4, SiC and Al2O3 ceramic balls was investigated from 20 to 1000 °C. It was found that the composite demonstrated excellent lubricating properties with different friction pairs at a wide temperature range, which can be attributed to the synergetic effect of Ag, fluorides, and molybdates formed by oxidations. The Ni3Al matrix self-lubricating composite/Si3N4 couple possessed the stable friction coefficient and wear rate.

  20. Packaging Technologies for 500 C SiC Electronics and Sensors: Challenges in Material Science and Technology

    Science.gov (United States)

    Chen, Liang-Yu; Neudeck, Philip G.; Behelm, Glenn M.; Spry, David J.; Meredith, Roger D.; Hunter, Gary W.

    2015-01-01

    This paper presents ceramic substrates and thick-film metallization based packaging technologies in development for 500C silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chip-level packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550C. The 96 alumina packaging system composed of chip-level packages and PCBs has been successfully tested with high temperature SiC discrete transistor devices at 500C for over 10,000 hours. In addition to tests in a laboratory environment, a SiC junction field-effect-transistor (JFET) with a packaging system composed of a 96 alumina chip-level package and an alumina printed circuit board was tested on low earth orbit for eighteen months via a NASA International Space Station experiment. In addition to packaging systems for electronics, a spark-plug type sensor package based on this high temperature interconnection system for high temperature SiC capacitive pressure sensors was also developed and tested. In order to further significantly improve the performance of packaging system for higher packaging density, higher operation frequency, power rating, and even higher temperatures, some fundamental material challenges must be addressed. This presentation will discuss previous development and some of the challenges in material science (technology) to improve high temperature dielectrics for packaging applications.

  1. Influence of surface oxidation on the radiative properties of ZrB{sub 2}-SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Li, Ning, E-mail: lncaep@163.com [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang, 621900 (China); Xing, Pifeng; Li, Cui [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang, 621900 (China); Wang, Peng [School of Material Science and Engineering, Shandong University of Technology, Zibo 255049 (China); Jin, Xinxin [College of Materials Science and Engineering, Harbin University of Science and Technology, Harbin 150040 (China); Zhang, Xinghong [Science and Technology on Advanced Composites in Special Environments Laboratory, Harbin Institute of Technology, Harbin 150001 (China)

    2017-07-01

    Highlights: • Surface component affected radiative properties of ZrB{sub 2}-SiC composites significantly. • Emissivity in long-wave range gradually increased with the thickness of oxide scale. • The surface temperature had a little effect on radiative properties of composites. • Influence of surface roughness on emissivity could be negligible. • Covering the surface with glass is a method for improving radiative properties. - Abstract: The spectral emissivities of ZrB{sub 2}-20 vol.% SiC composites with various surface components of ZrB{sub 2}/SiC (ZS1), silica-rich glass (ZS2) and porous zirconia (ZS3) were measured using infrared spectrometer in the wavelength range from 2.5 to 25.0 μm. The relationship between surface oxidation (associated with surface component, thickness of oxide scale, testing temperature as well as roughness) and the radiative properties of ZrB{sub 2}-SiC composites were investigated systematically. Surface component affected the radiative properties of composites significantly. The total emissivity of ZS1 varied from 0.22 to 0.81 accompanied with surface oxidation in the temperature range 300–900 °C. The emissivity of ZS2 was about 1.5 times as that of ZS3 under the same testing conditions. The oxide scale on specimen surface enhanced the radiative properties especially in terms of short-wave range, and the emissivity in the long-wave range gradually increased with the thickness of oxide scale within a certain range. The influence of testing temperature and surface roughness was also investigated. The testing temperature had a little effect on radiative properties, whereas effect of surface roughness could be negligible.

  2. Morphological analysis of zirconium nuclear fuel retaining rods braided with SiC: Quality assurance and defect identification

    Energy Technology Data Exchange (ETDEWEB)

    Glazoff, Michael V., E-mail: Michael.Glazoff@inl.gov [Idaho National Laboratory, P.O. Box 1625, Idaho Falls, ID 83415-3710 (United States); Hiromoto, Robert; Tokuhiro, Akira [University of Idaho, CAES, Dept. of Nuclear Engineering, Idaho Falls, ID 83401 (United States)

    2014-08-01

    Highlights: • The stability of materials under extreme conditions is an important issue for the safety of nuclear reactors. • To improve zircaloys’ thermal stability in off-normal conditions, coating of SiC filaments is considered because silicon carbide possesses remarkable inertness at high temperatures. • Mathematical morphology was used for automatic defect identification in Zircaloy-4 rods braided with the layer of SiC filament. • The original mathematical morphology algorithms allowing solving the problem of quality assurance were developed. • In nuclear industry, such algorithms are used for the first time. - Abstract: In the after-Fukushima world, the stability of materials under extreme conditions is an important issue for the safety of nuclear reactors. Among the methods explored currently to improve zircaloys’ thermal stability in off-normal conditions, using a protective coat of the SiC filaments is considered because silicon carbide is well known for its remarkable chemical inertness at high temperatures. A typical SiC fiber contains ∼50,000 individual filaments of 5–10 μm in diameter. In this paper, an effort was made to develop and apply mathematical morphology to the process of automatic defect identification in Zircaloy-4 rods braided with the protective layer of the silicon carbide filament. However, the issues of the braiding quality have to be addressed to ensure its full protective potential. We present the original mathematical morphology algorithms that allow solving this problem of quality assurance successfully. In nuclear industry, such algorithms are used for the first time, and could be easily generalized to the case of automated continuous monitoring for defect identification in the future.

  3. The Ordering and Electronic Structure of Multilayer Epitaxial Graphene on SiC

    Science.gov (United States)

    Conrad, Edward

    2011-03-01

    The structural definition of graphene as a single sheet of hexagonal carbon limits how we view this material. It is the electronic properties of a single isolated graphene sheet that actually defines and motivates current graphene research. Remarkably, the best example of the idealized band structure of graphene comes does not come from a single graphene layer but from multilayer films grown on SiC. Multilayer epitaxial graphene (MEG) not only shows all the 2D properties expected for an isolated graphene sheet, but it the scalability to large scale integrated carbon circuits. I will show that the reason for this remarkable property, i.e. that a multilayer graphene films behaving like a single graphene sheet, is due to MEG's unique stacking. MEG films have a quasi-ordered rotational stacking that breaks the Bernal stacking symmetry associated with graphite. Angle resolved photoemission spectroscopy (ARPES) data demonstrates that the bands are linear at the K-point of these films. We can also show that the rotated stacking is highly ordered and that less than 20% of the graphene sheets in the film are Bernal stacked. I will also show that ARPES measurements on MEG films demonstrate serious inadequacies with both tight binding and ab initio formalisms. In particular the data shows no reductions in the Fermi velocity or the formation of Van Hove singularity that have been consistently predicted for this material. I wish to acknowledge funding from the NSF under Grants No. DMR-0820382 and DMR-1005880.

  4. High-performance SiC avalanche photodiode for single ultraviolet photon detection

    Science.gov (United States)

    Bai, Xiaogang; Liu, Han-din; McIntosh, Dion; Campbell, Joe C.

    2008-08-01

    Sensitive ultraviolet photodetectors are essential components for a growing number of civilian and military applications. In this paper, we report 4H Silicon Carbide (SiC) avalanche photodiodes (APDs) with a p-i-n structure. These APDs, range in diameter from 180 μm to 250μm, exhibit very low dark current (10s of pA at avalanche gain of 1000) and high gain in linear-mode operation. An external quantum efficiency of 48% at 280 nm is achieved at unity gain with a recessed-window structure. The differential resistance of a 250 μm recessed-window device at zero bias is estimated to be 6×1014 ohms. As a result of high external quantum efficiency, large area, and large differential resistance, a record high specific detectivity of 4.1×1014 cmHz 1/2 W-1, has been achieved. Single ultraviolet photon detection in Geiger-mode operation with gated quenching is also described. In this paper, we report single photon detection efficiency (SPDE) of 30% at 280 nm with a dark count probability (DCP) of 8×10-4.

  5. Optimization of tribological performance of SiC embedded composite coating via Taguchi analysis approach

    Science.gov (United States)

    Maleque, M. A.; Bello, K. A.; Adebisi, A. A.; Akma, N.

    2017-03-01

    Tungsten inert gas (TIG) torch is one of the most recently used heat source for surface modification of engineering parts, giving similar results to the more expensive high power laser technique. In this study, ceramic-based embedded composite coating has been produced by precoated silicon carbide (SiC) powders on the AISI 4340 low alloy steel substrate using TIG welding torch process. A design of experiment based on Taguchi approach has been adopted to optimize the TIG cladding process parameters. The L9 orthogonal array and the signal-to-noise was used to study the effect of TIG welding parameters such as arc current, travelling speed, welding voltage and argon flow rate on tribological response behaviour (wear rate, surface roughness and wear track width). The objective of the study was to identify optimal design parameter that significantly minimizes each of the surface quality characteristics. The analysis of the experimental results revealed that the argon flow rate was found to be the most influential factor contributing to the minimum wear and surface roughness of the modified coating surface. On the other hand, the key factor in reducing wear scar is the welding voltage. Finally, a convenient and economical Taguchi approach used in this study was efficient to find out optimal factor settings for obtaining minimum wear rate, wear scar and surface roughness responses in TIG-coated surfaces.

  6. Strong plasmon reflection at nanometer-size gaps in monolayer graphene on SiC.

    Science.gov (United States)

    Chen, Jianing; Nesterov, Maxim L; Nikitin, Alexey Yu; Thongrattanasiri, Sukosin; Alonso-González, Pablo; Slipchenko, Tetiana M; Speck, Florian; Ostler, Markus; Seyller, Thomas; Crassee, Iris; Koppens, Frank H L; Martin-Moreno, Luis; García de Abajo, F Javier; Kuzmenko, Alexey B; Hillenbrand, Rainer

    2013-01-01

    We employ tip-enhanced infrared near-field microscopy to study the plasmonic properties of epitaxial quasi-free-standing monolayer graphene on silicon carbide. The near-field images reveal propagating graphene plasmons, as well as a strong plasmon reflection at gaps in the graphene layer, which appear at the steps between the SiC terraces. When the step height is around 1.5 nm, which is two orders of magnitude smaller than the plasmon wavelength, the reflection signal reaches 20% of its value at graphene edges, and it approaches 50% for step heights as small as 5 nm. This intriguing observation is corroborated by numerical simulations and explained by the accumulation of a line charge at the graphene termination. The associated electromagnetic fields at the graphene termination decay within a few nanometers, thus preventing efficient plasmon transmission across nanoscale gaps. Our work suggests that plasmon propagation in graphene-based circuits can be tailored using extremely compact nanostructures, such as ultranarrow gaps. It also demonstrates that tip-enhanced near-field microscopy is a powerful contactless tool to examine nanoscale defects in graphene.

  7. Tribological Wear Behaviour and Hardness Measurement of SiC, Al2O3 Reinforced Al. Matrix Hybrid Composite

    Science.gov (United States)

    Subramanian, Senthil Murugan; Vijayan, Jegan; Muthaiah, Velmurugan

    2017-10-01

    In the present study, Aluminium Matrix Hybrid Composite (AMHC) of 6061-T6 alloy reinforced with silicon carbide (SiC) particulate and further addition of aluminium oxide (Al2O3) particulate was fabricated by stir casting process. The wear resistance and frictional properties of that AMHC were studied by performing dry sliding wear test using a pin on disk wear tester. The experiments were conducted at a constant sliding velocity of 1.57 m/s and sliding distance of 1800 m under loading conditions of 10 and 20 N. Further tests were also carried out by keeping Al2O3 percentage (7%) constant and increasing the SiC percentage (10, 15, and 20%). The results show that the reinforcement of the metal matrix with SiC and Al2O3 reduces the wear rate range and also indicate that the wear of the test specimen increases with the increasing load and sliding distance. The coefficient of friction increases with load and increasing volume content of reinforcement. The worn surfaces were examined by scanning electron microscope to study the wear mechanism. By using wear mechanism analysis, the wear surfaces and wear properties of AMHC were determined.

  8. Weibull Statistical Analysis on the Mechanical Properties of SiC by Immersion in Acidic and Alkaline Solutions

    Energy Technology Data Exchange (ETDEWEB)

    Ahn, Seok-Hwan [Jungwon Univ., Koisan (Korea, Republic of); Jeong, Sang-Cheol; Nam, Ki-Woo [Pukyong National Univ., Busan (Korea, Republic of)

    2016-09-15

    A Weibull statistical analysis of the mechanical properties of SiC ceramics was carried out by immersion in acidic and alkaline solutions. The heat treatment was carried out at 1373 K. The corrosion of SiC was carried out in acidic and alkaline solutions under KSL1607. The bending strength of corroded crack-healed specimens decreased 47 % and 70 % compared to those of uncorroded specimens in acidic and alkaline solutions, respectively. The corrosion of SiC ceramics is faster in alkaline solution than in acid solution. The scale and shape parameters were evaluated for the as-received and corroded materials, respectively. The shape parameter of the as-received material corroded in acidic and alkaline solutions was significantly more apparent in the acidic solution. Further, the heat-treated material was large in acidic solution but small in alkaline solution. The shape parameters of the as-received and heat-treated materials were smaller in both acidic and alkaline solutions.

  9. Development of a high current high temperature SiC MOSFET based solid-state power controller

    Science.gov (United States)

    Guo, Yuanbo

    Solid-State Power Controllers (SSPCs) are critical components in the development of electric aircraft and must be small in size, fast in response, and have high reliability. They are also proposed for use in microgrids to improve the power quality and system reliability. The development of Silicon Carbide (SiC) semiconductor switches provides a series of improvements for the SSPCs in both electrical and thermal performances. In the proposed SSPC design investigation, SiC MOSFETs die are mounted on cast-aluminum traces, under which are an aluminum nitride (AlN) layer and an aluminum composite base plate. The concept of i2t and its application in solid state protection is discussed in detail. Transient thermal characterizations of SiC MOSFETs are provided for a nearly-all-aluminum package by Finite Element Analysis (FEA). The SSPC is targeted for 120A nominal, 1200A fault current, 270V DC system, and working at 105°C environment with a maximum 350°C transient junction temperature capability.

  10. Microwave-Assisted Synthesis of SiC Nanoparticles for the Efficient Adsorptive Removal of Nitroimidazole Antibiotics from Aqueous Solution

    Directory of Open Access Journals (Sweden)

    Ali Fakhri

    2017-02-01

    Full Text Available Environmental pollution caused by the improper disposal of pharmaceuticals is a matter of global concern, and warrants immediate attention. Of particular concern is the aquatic contamination caused by the increasing use of antibiotics, which could give rise to superbugs. While researchers have mainly focused on improving the adsorption capacity of mostly activated carbon-based adsorbents, we have developed a non-conventional adsorbent (SiC nanoparticles in the present work for the adsorptive removal of four different nitroimidazole antibiotics, namely metronidazole (MNZ, dimetridazole (DMZ, ronidazole (RNZ, and tinidazole (TNZ. In addition to the unique properties which are inherent to SiC, the present adsorbent not only possesses a high adsorption capacity, but also shows one of the highest adsorption rates; both of which are prerequisites for an efficient and cost-effective adsorption-based separation technology. Silicon carbide (SiC nanoparticles, synthesized by a microwave-assisted method, were thoroughly characterized using X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and the Brunauer–Emmett–Teller method. The adsorption isotherm data were accurately described by the Langmuir isotherm model. On the other hand, the adsorption kinetics, closely represented by the pseudo-second order kinetic model, were faster than most previously reported adsorbents. The reaction rate constants were 0.0089, 0.0079, 0.0072, and 0.0055 g/(mg min, for MNZ, DMZ, RNZ, and TNZ, respectively.

  11. Microstructure and Tensile Properties of BN/SiC Coated Hi-Nicalon, and Sylramic SiC Fiber Preforms. Revised

    Science.gov (United States)

    Bhatt, Ramakrishna T.; Chen, Yuan L.; Morscher, Gregory N.

    2002-01-01

    Batch to batch and within batch variations, and the influence of fiber architecture on room temperature physical and tensile properties of BN/SiC coated Hi-Nicalon and Sylramic SiC fiber preform specimens were determined. The three fiber architectures studied were plain weave (PW), 5-harness satin (5HS), and 8-harness satin (8HS). Results indicate that the physical properties vary up to 10 percent within a batch, and up to 20 percent between batches of preforms. Load-reload (Hysteresis) and acoustic emission methods were used to analyze damage accumulation occurring during tensile loading. Early acoustic emission activity, before observable hysteretic behavior, indicates that the damage starts with the formation of nonbridged tunnel cracks. These cracks then propagate and intersect the load bearing "0 deg" fibers giving rise to hysteretic behavior. For the Hi-Nicalon preform specimens, the onset of "0 deg" bundle cracking stress and strain appeared to be independent of the fiber architecture. Also, the "0 deg" fiber bundle cracking strain remained nearly the same for the preform specimens of both fiber types. TEM analysis indicates that the CVI BN interface coating is mostly amorphous and contains carbon and oxygen impurities, and the CVI SiC coating is crystalline. No reaction exists between the CVI BN and SiC coating.

  12. Effect of Y2O3 addition on the properties of mullite bonded porous SiC ceramics prepared by an infiltration technique

    Directory of Open Access Journals (Sweden)

    Kayal, N.

    2013-10-01

    Full Text Available Mullite bonded porous SiC ceramics were synthesized by infiltrating a powder compact of SiC and Y2O3 with a liquid precursor of mullite which on subsequent heat treatment at 1300-1500 ºC produced mullite bonded porous SiC ceramics. The effect of Y2O3 content and sintering temperature on phase composition, microstructure, oxidation degree of SiC, flexural strength, porosity and pore size distribution were studied. Due to enhance oxidation and well developed neck formation by the addition of Y2O3 a high strength 49 MPa was achieved for the porous mullite bonded SiC ceramics with porosity 28 vol %.Se han sintetizado materiales porosos de SiC-Mullita mediante la infiltración de polvo prensado de SiC y Y2O3 con un precursor líquido de mullita, el cual con un tratamiento térmico posterior a 1300-1500 °C da lugar a los materiales porosos de SiC-Mullita. Se estudió el efecto del contenido de Y2O3 y la temperatura de sinterización en la constitución mineralógica, en la microestructura, en el grado de oxidación del SiC, la resistencia a la flexión, la porosidad total y su distribución de tamaño. Debido a la oxidación y a la mejora en la formación de los cuellos por la adición de Y2O3, se alcanzan altos valores de resistencia, 49 MPa, para estos materiales porosos de SiC-Mullita con porosidad 28 % en volumen.

  13. Fabrication and characterization of laminated SiC composites reinforced with graphene nanoplatelets

    Energy Technology Data Exchange (ETDEWEB)

    Pereira dos Santos Tonello, Karolina, E-mail: karolina.pereira@polito.it; Padovano, Elisa; Badini, Claudio; Biamino, Sara; Pavese, Matteo; Fino, Paolo

    2016-04-06

    Nanosized allotropes of carbon have been attracting a lot of attention recently, but despite the steady growth of the number of scientific works on materials based on graphene family, there is still much to be explored. These two-dimensional carbon materials, such as graphene nanoplatelets, multilayer graphene or few layer graphene have emerged as a possible second phase for reinforcing ceramics, resulting in remarkable properties of these composites. Typically, graphene ceramic matrix composites are prepared by a colloidal or a powder route followed by pressure assisted sintering. Recently other traditional ceramic processes, such as tape casting, were also successfully studied. The aim of this research is to fabricate α-SiC multi-layer composites containing 2, 4 and 8 vol% of graphene nanoplatelets (GNP) by tape casting and study the effect of these additions on the mechanical behavior of the composites. In order to achieve this purpose, samples were pressureless sintered and tested for density and mechanical properties. The elastic modulus was measured by the impulse excitation of vibration method, the hardness by Vickers indentation and fracture toughness using micro Vickers indentation and by three-point bending applying the pre-cracked beam approach. Results showed that up to 4 vol%, the density and mechanical properties were directly proportional to the amount of GNP added but showed a dramatic decrease for 8 vol% of GNP. Composites with 4 vol% of GNP had a 23% increment elastic modulus, while the fracture toughness had a 34% increment compared to SiC tapes fabricated under the same conditions. Higher amounts of GNP induces porosity in the samples, thus decreasing the mechanical properties. This study, therefore, indicates that 4% is an optimal amount of GNP and suggests that excessive amounts of GNP are rather detrimental to the mechanical properties of silicon carbide ceramic materials prepared by tape casting.

  14. Analytical electron tomography mapping of the SiC pore oxidation at the nanoscale.

    Science.gov (United States)

    Florea, Ileana; Ersen, Ovidiu; Hirlimann, Charles; Roiban, Lucian; Deneuve, Adrien; Houllé, Matthieu; Janowska, Izabela; Nguyen, Patrick; Pham, Charlotte; Pham-Huu, Cuong

    2010-12-01

    Silicon carbide is a ceramic material that has been widely studied because of its potential applications, ranging from electronics to heterogeneous catalysis. Recently, a new type of SiC materials with a medium specific surface area and thermal conductivity, called β-SiC, has attracted overgrowing interest as a new class of catalyst support in several catalytic reactions. A primary electron tomography study, performed in usual mode, has revealed a dual surface structure defined by two types of porosities made of networks of connected channels with sizes larger than 50 nm and ink-bottled pores with sizes spanning from 4 to 50 nm. Depending on the solvent nature, metal nanoparticles could be selectively deposited inside one of the two porosities, a fact that illustrates a selective wetting titration of the two types of surfaces by different liquids. The explaining hypothesis that has been put forward was that this selectivity against solvents is related to the pore surface oxidation degree of the two types of pores. A new technique of analytical electron tomography, where the series of projections used to reconstruct the volume of an object is recorded in energy filtered mode (EFTEM), has been implemented to map the pore oxidation state and to correlate it with the morphology and the accessibility of the porous network. Applied, for the first time, at a nanoscale resolution, this technique allowed us to obtain 3D elemental maps of different elements present in the analysed porous grains, in particular oxygen; we found thus that the interconnected channel pores are more rapidly oxidized than the ink-bottled ones. Alternatively, our study highlights the great interest of this method that opens the way for obtaining precise information on the chemical composition of a 3D surface at a nanometer scale.

  15. Exploring the effects of SiC reinforcement incorporation on mechanical properties of friction stir welded 7075 aluminum alloy: Fatigue life, impact energy, tensile strength

    Energy Technology Data Exchange (ETDEWEB)

    Bahrami, Mohsen, E-mail: Mohsen.bahrami@aut.ac.ir [Faculty of Mining and Metallurgical Engineering, Amirkabir University of Technology (AUT), Hafez Avenue, Tehran (Iran, Islamic Republic of); Helmi, Nader [Faculty of Mining and Metallurgical Engineering, Amirkabir University of Technology (AUT), Hafez Avenue, Tehran (Iran, Islamic Republic of); Dehghani, Kamran [Faculty of Mining and Metallurgical Engineering, Amirkabir University of Technology (AUT), Hafez Avenue, Tehran (Iran, Islamic Republic of); Centre of Excellence in Smart Structures and Dynamical Systems (Iran, Islamic Republic of); Givi, Mohammad Kazem Besharati [Department of Mechanical Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)

    2014-02-10

    In the current research, the role of SiC nano-particles in improving the mechanical properties of friction stir welded (FSWed) 7075 aluminum alloy is investigated. To this end, friction stir welding (FSW) was conducted at 1250 rpm and 40 mm/min. The experiment carried out with and without incorporating SiC nano-particles along the joint line. Cross-sectional microstructures of the joints were characterized employing optical and scanning electron microscopy (SEM). Results achieved through X-ray diffraction (XRD) confirmed the presence of SiC powders. Moreover, it was discovered that the volume fraction of the reinforcement particles was 20%. Along with an excellent bonding between SiC nano-particles and aluminum matrix, SEM photograph demonstrated a good dispersion of SiC reinforcements. Atomic force microscopy (AFM) results were also in tight agreement with the recent SEM microstructure. Thanks to the presence of SiC nano-particles, tensile strength, percent elongation, fatigue life, and toughness of the joint improved tremendously. The fracture morphologies were in good agreement with corresponding ductility results.

  16. Enhanced Compressive Strength of Nanostructured Aluminum Reinforced with SiC Nanoparticles and Investigation of Strengthening Mechanisms and Fracture Behavior

    Science.gov (United States)

    Akbarpour, M. R.; Torknik, F. S.; Manafi, S. A.

    2017-10-01

    In this study, microstructure and mechanical properties of nanostructured Al and Al reinforced with different volume fractions of SiC nanoparticles fabricated through a powder metallurgy route, including high-energy mechanical milling and hot pressing method, were examined. Nanostructured Al and the Al-8 vol.%SiC nanocomposite showed superior compressive strength of ≈300 and ≈412 MPa, respectively, with reasonable ductility. The high strength of the nanocomposite was attributed to the reduced grain size of the Al matrix and homogeneous dispersion of the nanoparticles in the matrix. The effects of nanoparticles on strengthening of Al and fracture mechanisms are presented and discussed.

  17. Fe-implanted SiC as a potential DMS: X-ray diffraction and rutherford backscattering and channelling study

    Energy Technology Data Exchange (ETDEWEB)

    Dupeyrat, C., E-mail: cyril.dupeyrat@etu.univ-poitiers.f [Laboratoire de Physique des Materiaux (PhyMat), SP2MI, teleport 2, Bvd M. et P. Curie, 86962 Chasseneuil-Futuroscope (France); Declemy, A.; Drouet, M. [Laboratoire de Physique des Materiaux (PhyMat), SP2MI, teleport 2, Bvd M. et P. Curie, 86962 Chasseneuil-Futuroscope (France); Debelle, A.; Thome, L. [Centre de Spectrometrie Nucleaire et Spectrometrie de Masse (CSNSM), Universite Paris-Sud 11, Bat 104, 91405 Orsay (France)

    2010-10-01

    Single crystalline (0 0 0 1)-oriented 6H-SiC samples were implanted at 380 {sup o}C with low-energy Fe ions (in the 100 keV range) with the aim of synthesizing so-called diluted magnetic semiconductors. X-ray diffraction and Rutherford backscattering spectrometry and channeling are used to study the microstructural changes in these Fe-implanted SiC crystals submitted to furnace annealing and laser processing, both treatments being performed in order to eliminate the implantation-induced defects.

  18. Inequalities of caries experience in Nevada youth expressed by DMFT index vs. Significant Caries Index (SiC over time

    Directory of Open Access Journals (Sweden)

    Mobley Connie

    2011-04-01

    Full Text Available Abstract Background With the increasingly polarized distribution of dental caries among children and adolescents, the usual DMFT measure has become a less meaningful population descriptor. To re-focus on identifying the high caries prevalence group the Significant Caries Index (SiC was created. The aims of this study were to analyze the prevalence and severity of dental caries in Nevada youth over a period of eight years and to compare its expression by means of DMFT and SiC; analyze the caries trends in the population and their underlying factors, and determine whether Nevada youth were at risk for significantly high levels of dental caries. Methods Retrospective data was analyzed from a series of sequential, standardized oral health surveys across eight years (2001/2002-2008/2009 that included over 62,000 examinations of adolescents 13-19 years of age, attending public/private Nevada schools. Mean Decayed-Missing-Filled Teeth index (DMFT and Significant Caries Index (SiC were subsequently computed for each academic year. Descriptive statistics were reported for analysis of comparative DMFT and SiC scores in relation to age, gender, racial background, and residence in a fluoridated/non-fluoridated community. Logistic regression analysis was used to analyze the differential impact of the variables on the probability of being in the high caries prevalence group. Results Comparison of students' mean DMFT to National (NHANES data confirmed that dental caries remains a common chronic disease among Nevada youth, presenting higher prevalence rates and greater mean scores than the national averages. Downward trends were found across all demographics compared between survey years 1 and 6 with the exception of survey year 3. An upward trend began in survey year six. Over time, the younger group displayed an increasing proportion of cariesfree individuals while a decreasing proportion was found among older examinees. As expected, the mean SiC score was

  19. Deposition of titanium coating on SiC fiber by chemical vapor deposition with Ti-I{sub 2} system

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Xian, E-mail: luo_shenfan@hotmail.com; Wu, Shuai; Yang, Yan-qing; Jin, Na; Liu, Shuai; Huang, Bin

    2017-06-01

    Highlights: • The transformation paths of (Ti + I{sub 2}) powder to Ti coating is: Ti + I{sub 2} → (TiI{sub 2}, TiI{sub 3}) → Ti. • Uniform coating was obtained on SiC fiber, but it contained Si and C elements. • Deposition rate of the coating increased with the increase of temperature. • Deposition thickness increased with time and achieved the maximum at 90 min. - Abstract: Titanium coating was prepared on SiC fiber using titanium-iodine (Ti-I{sub 2}) mixture by hot-wall chemical vapor deposition. Thermodynamic analysis and experimental observation were carried out in this work. The thermodynamic analysis of the reactions in the Ti-I{sub 2} system indicates that Ti and I{sub 2} raw powder materials transform to titanium coating as follows: Ti + I{sub 2} → (TiI{sub 2}, TiI{sub 3}), and (TiI{sub 2}, TiI{sub 3}) → Ti. In theory, the conversions of TiI{sub 3} and TiI{sub 2} reach the maximum when Ti:I{sub 2} is 1:1.5, while in actual experiment that reached the maximum when Ti:I{sub 2} was 1:2, as there existed the waste of I{sub 2} due to sublimation. Typical deposited coating is relatively flat and uniform. However, as SiC is prone to react with Ti at high temperatures, the obtained coating contained some Si and C elements except for Ti. So the coating was not a pure Ti coating but contained some carbides and silicides. Deposition rate of the coating increased with the increase of temperature. The deposited thickness increased with the increase of heat preservation time, and achieved the maximum thickness at 90 min.

  20. Graphene encapsulated and SiC reinforced silicon nanowires as an anode material for lithium ion batteries.

    Science.gov (United States)

    Yang, Yang; Ren, Jian-Guo; Wang, Xin; Chui, Ying-San; Wu, Qi-Hui; Chen, Xianfeng; Zhang, Wenjun

    2013-09-21

    Anode materials play a key role in the performance, in particular the capacity and lifetime, of lithium ion batteries (LIBs). Silicon has been demonstrated to be a promising anode material due to its high specific capacity, but pulverization during cycling and formation of an unstable solid-electrolyte interphase limit its cycle life. Herein, we show that anodes consisting of an active silicon nanowire (Si NW), which is surrounded by a uniform graphene shell and comprises silicon carbide nanocrystals, are capable of serving over 500 cycles in half cells at a high lithium storage capacity of 1650 mA h g(-1). In the anodes, the graphene shell provides a highly-conductive path and prevents direct exposure of Si NWs to electrolytes while the SiC nanocrystals may act as a rigid backbone to retain the integrity of the Si NW in its great deformation process caused by repetitive charging-discharging reactions, resulting in a stable cyclability.

  1. Terahertz Luminescence and Electrical Characteristics of SiC Structures with Natural Superlattice in Strong Electric Fields

    Science.gov (United States)

    Sankin, V. I.; Andrianov, A. V.; Petrov, A. G.; Zakhar'in, A. O.; Nagalyuk, S. S.; Shkrebiy, P. P.

    2017-12-01

    Recently, the intense terahertz electroluminescence from monopolar n++-n--n+ structures of 8H-SiC natural superlattice at helium temperatures due to Bloch oscillations was found out. In the present work, we compare the THz emission and electrical characteristics of monopolar n++-n--n+ and bipolar n++- π-n+ 8H-SiC structures at 7 K. The bipolar n++- π-n+ 8H-SiC structures were analogous to those on which the negative differential conductivity effect was observed earlier for three polytypes (4H, 6H, and 8H) at T = 300 K. The obtained results allow one to draw a conclusion about common nature of the negative differential conductivity and THz emission effects in the natural superlattice of SiC caused by Bloch oscillations. These results give the proof of fundamental importance supporting the objectivity of postulates of the F. Bloch - C. Zener - G. N. Wannier theory

  2. Effect of Ti3SiC2 on Tribological Properties of M50 Matrix Self-Lubricating Composites from 25 to 450 °C

    Science.gov (United States)

    Deng, Xiaobin; Shi, Xiaoliang; Liu, Xiyao; Huang, Yuchun; Yan, Zhao; Yang, Kang; Wang, Yufu

    2017-09-01

    The tribological performance is a key factor for M50 steel that is widely used in aero-engine main-shaft bearings. In this study, the tribological properties of M50 matrix self-lubricating composites with different contents of Ti3SiC2 against Si3N4 ceramic counterpart are investigated at 15 N-0.2 m/s from 25 to 450 °C. The results showed that M50 with 10 wt.% Ti3SiC2 (MT10) exhibits the lower friction coefficients (0.21-0.78) and less wear rates (1.78-3.14 × 10-6 mm3 N-1 m-1) at 25-450 °C. Especially at 350 °C, MT10 shows the lowest friction coefficient and wear rate owing to the formation of smooth lubricating layer containing Ti3SiC2 and oxides. Ti3SiC2 and compacted Ti-Si-oxides are uniformly distributed in the lubricating layer, which can well improve the anti-friction and anti-wear performance of MT10. The mechanically mixed layer containing massive Ti3SiC2 can sustain the lubricating layer, resulting in the increase of anti-wear performance of MT10. MT10 could be applied under the practical conditions of friction and wear for its outstanding anti-friction and anti-wear performance.

  3. Comportamiento frente a la corrosión del material compuesto 2124/SiC

    Directory of Open Access Journals (Sweden)

    López-Caballero, J. A.

    2005-12-01

    Full Text Available A comparative study was performed on the corrosion behaviour of an aluminium matrix composite reinforced with silicon carbide particles, obtained by powder metallurgic. The 2124/SiC material was heat treated using T4 and T6 procedures. The T6 heat treatment induced the formation of several intermetallics and reducing the corrosion resistance. The silicon carbide particles did not have a cathodic behaviour as compared with the aluminium matrix. However, these particles produced a diminution in the corrosion resistance due to the formation of more active zones in the matrix/reinforced interface. These ceramic particles caused intermetallic precipitation and deformation originating in the surrounding zones localized corrosion.

    Se realiza un estudio comparativo del comportamiento frente a la corrosión de la aleación de aluminio 2124 reforzada con partículas de carburo de silicio, obtenida por pulvimetalurgia y con tratamientos térmicos T4 y T6. Los resultados experimentales muestran que el tratamiento térmico T6 induce la formación de numerosos intermetálicos que reducen la resistencia a la corrosión. Las partículas de carburo de silicio no tienen un comportamiento catódico con respecto a la matriz de aluminio, sin embargo, disminuyen la resistencia a la corrosión, ya que generan zonas más activas en la interfase matriz/ refuerzo, debido a la acumulación de dislocaciones, tensiones residuales y a la precipitación de intermetálicos.

  4. Surface functionalization of epitaxial graphene on SiC by ion irradiation for gas sensing application

    Energy Technology Data Exchange (ETDEWEB)

    Kaushik, Priya Darshni, E-mail: kaushik.priyadarshni@gmail.com [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Department of Physics, Jamia Millia Islamia, New Delhi, 110025 (India); Ivanov, Ivan G.; Lin, Pin-Cheng [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Kaur, Gurpreet [Department of Physics and Astrophysics, University of Delhi, Delhi, 110007 (India); Eriksson, Jens [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Lakshmi, G.B.V.S. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, 110067 (India); Avasthi, D.K. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, 110067 (India); Amity Institute of Nanotechnology, Noida 201313 (India); Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi, 110007 (India); Aziz, Anver; Siddiqui, Azher M. [Department of Physics, Jamia Millia Islamia, New Delhi, 110025 (India); Syväjärvi, Mikael [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden); Yazdi, G. Reza, E-mail: yazdi@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping (Sweden)

    2017-05-01

    Highlights: • For the first time the gas sensing application of SHI irradiated epitaxial graphene on SiC is explored. • Surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles. • Existence of an optimal fluence which maximize the gas sensing response towards NO{sub 2} and NH{sub 3} gases. - Abstract: In this work, surface functionalization of epitaxial graphene grown on silicon carbide was performed by ion irradiation to investigate their gas sensing capabilities. Swift heavy ion irradiation using 100 MeV silver ions at four varying fluences was implemented on epitaxial graphene to investigate morphological and structural changes and their effects on the gas sensing capabilities of graphene. Sensing devices are expected as one of the first electronic applications using graphene and most of them use functionalized surfaces to tailor a certain function. In our case, we have studied irradiation as a tool to achieve functionalization. Morphological and structural changes on epitaxial graphene layers were investigated by atomic force microscopy, Raman spectroscopy, Raman mapping and reflectance mapping. The surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles at highest fluence (2 × 10{sup 13} ions/cm{sup 2}). Raman spectra analysis shows that the graphene defect density is increased with increasing fluence, while Raman mapping and reflectance mapping show that there is also a reduction of monolayer graphene coverage. The samples were investigated for ammonia and nitrogen dioxide gas sensing applications. Sensors fabricated on pristine and irradiated samples showed highest gas sensing response at an optimal fluence. Our work provides new pathways for introducing defects in controlled manner in epitaxial graphene, which can be used not only for gas sensing application but also for other applications, such as electrochemical, biosensing, magnetosensing and

  5. Thermomechanical Characterization of SiC Fiber Tows and Implications for CMC

    Science.gov (United States)

    Yun, H. M.; DiCarlo, J. A.

    1999-01-01

    In order to better understand SiC fiber behavior within CMC microstructures, mechanical tests were performed on multifilament tows consisting of different types of as produced and pretreated fibers. Tensile strengths of tows and single fibers were measured at room temperature for nonstoichiometric Hi-Nicalon and ZMI fibers and for stoichiometric Hi-Nicalon-S, Tyranno SA. and Sylramic fibers. Based on simple bundle theory, measured strengths for as-produced and sized tows were in general agreement with the single fiber results. However, after sizing removal under inert conditions, tow strengths for the coarser grained stoichiometric fibers were typically lower than those predicted from individual fiber data. This effect is attributed to enhanced fiber-fiber mechanical interaction caused by sizing removal from the rough surfaces of these fibers. In support of this, tow strengths remained high for those fiber types with fine grains or excess surface carbon; and, when re-coated with a BN interphase coating, tow strengths for the coarser grained fibers returned to their as-produced values. When the tows were pretreated in air at intermediate temperatures, tow strengths decreased in a manner that could be correlated with the oxidation characteristics of each fiber type as measured by thermogravimetric analysis. The creep and rupture properties of Hi-Nicalon and Sylramic tows were also measured in air and argon from 1200 to 1400 C. Although displaying transient and environmental effects similar to single fibers, the tows crept faster at short times and slower at long times. This resulted in the tow rupture strengths at long time being much greater than the rupture strengths of single fibers. The CMC implications of the tow results are discussed, as well as the benefits and limitations of tow testing.

  6. Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution

    DEFF Research Database (Denmark)

    Rozhavskaya, Mariia M.; Kukushkin, Sergey A.; Osipov, Andrey V.

    2017-01-01

    crystalline interfaces with epitaxial relationship between SiC/Si and AlN/SiC layers. Optimization of SiC morphology and AlN seed layer thickness facilitates the growth of GaN layers free of pits (v-defects). It is also found that Si doping eliminates these defects in the case of growth on SiC templates...... with non-optimized surface morphology. Thus, synthesis of thin SiC buffer layer is suggested as a solution for the interface problems at the initial stage of III-N on Si epitaxy....

  7. Effect of sputtering power on the structure and optical band gap of SiC thin films

    Science.gov (United States)

    Cheng, Yong; Huang, Xiaozhong; Du, Zuojuan; Xiao, Jianrong

    2017-11-01

    Amorphous SiC (a-SiC) thin films with a quartz plate as the substrate were prepared under different radio frequency (RF) powers through RF magnetron sputtering. Films structures were characterized by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), X-Ray Diffraction (XRD) and Raman spectrum. The absorption spectra of the thin films were acquired with UV-visible spectroscopy. Results showed that thin films prepared under different RF powers have different structures. With the increase in power, the maximum peak height, mean roughness, and mean square roughness increase initially and then decrease. The thin films are mainly composed of SiC and SiO2 bonds and contain abundant C. ID/IG increases as power increases. The UV-visible light absorption spectra confirmed that the thin films have strong UV absorption capacity but low absorption capacity in the infrared region. The optical band gap of the thin films ranges between 1.29 and 1.80 eV. With the increase in RF power, the sp3/sp2C hybrid bond in the thin films increases, resulting in a reduction of the optical band gap.

  8. Role of atomic terraces and steps in the electron transport properties of epitaxial graphene grown on SiC

    Directory of Open Access Journals (Sweden)

    H. Kuramochi

    2012-03-01

    Full Text Available Thermal decomposition of vicinal SiC substrates with self-organized periodic nanofacets is a promising method to produce large graphene sheets toward the commercial exploitation of graphene's superior electronic properties. The epitaxial graphene films grown on vicinal SiC comprise two distinct regions of terrace and step; and typically exhibit anisotropic electron transport behavior, although limited areas in the graphene film showed ballistic transport. To evaluate the role of terraces and steps in electron transport properties, we compared graphene samples with terrace and step regions grown on 4H-SiC(0001. Arrays of field effect transistors were fabricated on comparable graphene samples with their channels parallel or perpendicular to the nanofacets to identify the source of measured reduced mobility. Minimum conductivity and electron mobility increased with the larger proportional terrace region area; therefore, the terrace region has superior transport properties to step regions. The measured electron mobility in the terrace region, ∼1000 cm2/Vs, is 10 times larger than that in the step region, ∼100 cm2/Vs. We conclusively determine that parasitic effects originate in regions of graphene that grow over step edges in 4H-SiC(0001.

  9. Room-Temperature Growth of SiC Thin Films by Dual-Ion-Beam Sputtering Deposition

    Directory of Open Access Journals (Sweden)

    C. G. Jin

    2008-01-01

    Full Text Available Silicon carbide (SiC films were prepared by single and dual-ion-beamsputtering deposition at room temperature. An assisted Ar+ ion beam (ion energy Ei = 150 eV was directed to bombard the substrate surface to be helpful for forming SiC films. The microstructure and optical properties of nonirradicated and assisted ion-beam irradicated films have been characterized by transmission electron microscopy (TEM, scanning electron microscopy (SEM, Fourier transform infrared spectroscopy (FTIR, and Raman spectra. TEM result shows that the films are amorphous. The films exposed to a low-energy assisted ion-beam irradicated during sputtering from a-SiC target have exhibited smoother and compacter surface topography than which deposited with nonirradicated. The ion-beam irradicated improves the adhesion between film and substrate and releases the stress between film and substrate. With assisted ion-beam irradicated, the density of the Si–C bond in the film has increased. At the same time, the excess C atoms or the size of the sp2 bonded clusters reduces, and the a-Si phase decreases. These results indicate that the composition of the film is mainly Si–C bond.

  10. DEVELOPMENT OF SiC DEVICES FOR DIAGNOSTICS AND CONTROL OF COMBUSTION PRODUCTS IN ENERGY PLANT ENVIRONMENTS

    Energy Technology Data Exchange (ETDEWEB)

    Ruby N. Ghosh; Peter Tobias

    2003-12-01

    A sensor based on the wide bandgap semiconductor, silicon carbide (SiC), has been developed for the detection of combustion products in power plant environments. The sensor is a catalytic gate field effect device that can detect hydrogen containing species in chemically reactive, high temperature environments. The response of these metal/insulator/SiC (MISiC) devices to reducing gases has been assumed to be due to the reduction in the metal work function at the metal/oxide interface that shifts the capacitance to lower voltages. From in-situ capacitance-voltage measurements taken under sensor operating conditions we have discovered that two independent mechanisms are responsible for the sensor response to hydrogen and oxygen. We present a model of the device response based on the chemically induced shift of the metal/semiconductor barrier height as well as the passivation and creation of charged states at the SiO{sub 2}/SiC interface. The latter mechanism is much slower than the barrier height shift. Preliminary photoemission experiments have been performed to independently monitor the contribution of the two phenomena. We discuss in detail the effect of these results on sensor design and the choice of operating point for high temperature operation.

  11. Simulating characteristics of Si/Ge tandem monolithic solar cell with Si1-xGex buffer layer

    Directory of Open Access Journals (Sweden)

    Gnilenko A. B.

    2015-12-01

    Full Text Available In spite of many efforts to propose new semiconductor materials and sophisticated constructions of solar cells, crystalline silicone remains the main photovoltaic material widely used up to now. There are various methods to enhance the efficiency of silicone solar cells. One of them is to combine silicone with an additional semiconductor material with the different bandgap to form a tandem construction. For example, the germanium sub-cell used as the bottom cascade for the silicone sub-cell in the tandem monolithic solar cell makes it possible to utilize the "red" sub-band of solar spectra increasing overall solar cell efficiency. The problem of the 4.2% mismatch in lattice constant between Si and Ge can be resolved in such a case by the use of SiGe buffer layer. In the paper the results of the computer simulation for Si/Ge tandem monolithic solar cell with Si1-xGex buffer layer are presented. In the solar cell under consideration, the step graded Si1-xGex buffer layer is located between the top silicone and the bottom germanium cascades to reduce the threading dislocation density in mismatched materials. The cascades are commutated by the use of the germanium tunnel diode between the bottom sub-cell and the buffer layer. For the solar cell modeling, the physically-based device simulator ATLAS of Silvaco TCAD software is employed to predict the electrical behavior of the semiconductor structure and to provide a deep insight into the internal physical processes. The voltage-current characteristic, photovoltaic parameters and the distribution of basic physical values are obtained for the investigated tandem solar cell. The influence of layer thicknesses on the photovoltaic parameters is studied. The calculated efficiency of the tandem solar cell reaches 13% which is a quarter more than the efficiency of a simple silicone solar cell with the same constructive parameters and under the same illumination conditions.

  12. Pressureless sintering behavior and mechanical properties of ZrB2–SiC composites: effect of SiC content and particle size

    Directory of Open Access Journals (Sweden)

    Mehri Mashhadi

    2015-10-01

    Full Text Available In the present paper, ZrB2–SiC composites were prepared by pressureless sintering at temperatures of 2000–2200 °C for 1 h under argon atmosphere. In order to prepare composite samples, ZrB2 powder was milled for 2 h, then the reinforcing particles including of micron and nano-sized SiC powder were added. The mixtures were formed and, after the pyrolysis, they were sintered. Densification, microstructural and mechanical properties of ZrB2–SiC composites were investigated. The shrinkage of samples was measured both before and after the sintering, and the microstructure of samples was examined using scanning electron microscopy (SEM, equipped with EDS spectroscopy. Both mass fraction and size of SiC powder have a great effect on relative density, porosity, shrinkage, hardness and microstructure of these composites. The highest relative density and hardness were 98.12% and 15.02 GPa, respectively, in ZrB2–10 wt% SiCnano composite sintered at 2200 °C.

  13. Epitaxial Stabilization between Intermetallic and Carbide Domains in the Structures of Mn16SiC4 and Mn17Si2C4.

    Science.gov (United States)

    Fredrickson, Rie T; Guo, Yiming; Fredrickson, Daniel C

    2016-01-13

    The concept of frustration between competing geometrical or bonding motifs is frequently evoked in explaining complex phenomena in the structures and properties of materials. This idea is of particular importance for metallic systems, where frustration forms the basis for the design of metallic glasses, a source of diverse magnetic phenomena, and a rationale for the existence of intermetallics with giant unit cells containing thousands of atoms. Unlike soft materials, however, where conflicts can be synthetically encoded in the molecular structure, staging frustration in the metallic state is challenging due to the ease of macroscopic segregation of incompatible components. In this Article, we illustrate one approach for inducing the intergrowth of incompatible bonding motifs with the synthesis and characterization of two new intermetallic carbides: Mn16SiC4 (mC42) and Mn17Si2C4 (mP46). Similar to the phases Mn5SiC and Mn8Si2C in the Mn-Si-C system, these compounds appear as intergrowths of Mn3C and tetrahedrally close-packed (TCP) regions reminiscent of Mn-rich Mn-Si phases. The nearly complete spatial segregation of Mn-Si (intermetallic) and Mn-C (carbide) interactions in these structures can be understood from the differing geometrical requirements of C and Si. Rather than macroscopically separating into distinct phases, though, the two bonding types are tightly interwoven, with most Mn atoms being on the interfaces. DFT chemical pressure analysis reveals a driving force stabilizing these interfaces: the major local pressures acting between the Mn atoms in the Mn-Si and Mn-C systems are of opposite signs. Joining the intermetallic and carbide domains together then provides substantial relief to these local pressures, an effect we term epitaxial stabilization.

  14. Effects of Ni catalyzer on growth velocity and morphology of vapor growth SiC nano-fibers

    Energy Technology Data Exchange (ETDEWEB)

    Xu Xianfeng; Xiao Peng; Xiong Xiang; Huang Boyun [State Key Lab. for Powder Metallurgy, Central South University, Changsha, 410083 (China)], E-mail: xu-xianfeng@163.com

    2009-03-01

    Using Ni granules as a catalyzer, composite felts reinforced by both SiC nano-fibers (SiC-NFs) and carbon fibers were prepared at 1273K. SiC-NFs were deposited on the surface of the carbon fibers in-situ by chemical vapor growth. The microstructure and morphology of the fibers after being electroplated and deposited were characterized by scanning electron microscopy and transmission electron microscopy. The phase of the fibers after being deposited was characterized by X-ray diffractometry. The results show that the SiC-NFs produced by chemical vapor growth are single crystals of {beta}-SiC. It was found that Ni catalyzer had important effects on the growth of SiC-NFs. Smaller nano-granules were more active as catalyzers, resulting SiC-NFs appeared more spindle-like and had a more homogeneous dispersion. The weight change of the samples before and after deposition shows that a longer electroplating times results in SiC-NFs having a faster growth velocity.

  15. Síntese de Al2O3/SiC em forno de microondas: estudo de parâmetros do processo Synthesis of Al2O3/SiC in microwave oven: study of the processing parameters

    Directory of Open Access Journals (Sweden)

    T. P. Deksnys

    2005-12-01

    Full Text Available Estudos demonstram a eficiência do método de moagem prévia do aluminossilicato precursor para a síntese da fase Al2O3/SiC por meio da reação de redução carbotérmica em forno de microondas. No presente trabalho, além da moagem do precursor, outros parâmetros de reação foram estudados, como tempo de reação, potência da radiação emitida e fluxo de gás. As reações foram realizadas em forno de microondas semi-industrial, com adaptação para inserção de gás inerte. Dois tipos de reatores foram avaliados: um reator cilíndrico, termicamente isolado, e um reator tubular de leito fixo, nos quais foram colocados os precursores peletizados. Existe uma relação direta entre a saturação da atmosfera de reação com a cinética de redução carbotérmica do aluminossilicato. Esse comportamento, aliado a elevadas potências de emissão, favorecem a formação da fase Al2O3/SiC em períodos de tempo reduzidos.Results presented elsewhere have confirmed the feasibility of the previous milling process of the starting materials for the synthesis of Al2O3/SiC by the microwave-assisted carbothermal reduction. In the present work, parameters such as precursor milling, reaction time, microwave's power level and gas flow have been investigated. Reactions were carried out in a semi-industrial microwave oven (Cober Inc., USA, which allowed the inert gas insertion. Two reactions arrangement were developed to perform the synthesis: a cylindrical reactor, thermally insulated and a pipe fluidized bed reactor. Into both reactors, the precursor was applied in a palletized form to react. There is a direct relation between the reaction atmosphere saturation and the kinetics of the carbothermal reduction. This behavior, in addiction to high power levels of microwave radiation (>1.5 KW, favors the formation of Al2O3/SiC in a short time.

  16. ASNOM mapping of SiC epi-layer doping profile and of surface phonon polariton waveguiding

    CERN Document Server

    Kazantsev, Dmitry

    2013-01-01

    The apertureless SNOM mapping of the slightly-doped 4H-SiC epitaxial layer grown on a heavily-doped 4H-SiC substrate was performed with a cleaved edge geometry. ASNOM images taken at the light frequencies of a $C^{13}O_{2}^{16}$ laser show a clear contrast between the substrate and the epitaxial layer. The contrast vanishes at the laser frequency of $884cm^{-1}$, and gets clearer at higher frequencies $(923cm^{-1})$. This can be explained by changes in the local polarizability of SiC caused by the carrier concentration, which are more pronounced at higher frequencies. Since the light frequency is tuned up further ($935cm^{-1}$), a transversal mode structure appears in the ASNOM map, indicating a waveguide-like confinement of a surface phonon polariton wave inside the strip of an epi-layer outcrop.

  17. Alternative approaches of SiC & related wide bandgap materials in light emitting & solar cell applications

    Science.gov (United States)

    Wellmann, Peter; Syväjärvi, Mikael; Ou, Haiyan

    2014-03-01

    Materials for optoelectronics give a fascinating variety of issues to consider. Increasingly important are white light emitting diode (LED) and solar cell materials. Profound energy savings can be done by addressing new materials. White light emitting diodes are becoming common in our lighting scene. There is a great energy saving in the transition from the light bulb to white light emitting diodes via a transition of fluorescent light tubes. However, the white LEDs still suffer from a variety of challenges in order to be in our daily use. Therefore there is a great interest in alternative lighting solutions that could be part of our daily life. All materials create challenges in fabrication. Defects reduce the efficiency of optical transitions involved in the light emitting diode materials. The donor-acceptor co-doped SiC is a potential light converter for a novel monolithic all-semiconductor white LED. In spite of considerable research, the internal quantum efficiency is far less than theoretically predicted and is likely a fascinating scientific field for studying materials growth, defects and optical transitions. Still, efficient Si-based light source represents an ongoing research field in photonics that requires high efficiency at room temperature, wavelength tuning in a wide wavelength range, and easy integration in silicon photonic devices. In some of these devices, rare earth doped materials is considered as a potential way to provide luminescence spanning in a wide wavelength range. Divalent and trivalent oxidation states of Eu provide emitting centers in the visible region. In consideration, the use of Eu in photonics requires Eu doped thin films that are compatible with CMOS technology but for example faces material science issues like a low Eu solid solubility in silica. Therefore approaches aim to obtain efficient light emission from silicon oxycarbide which has a luminescence in the visible range and can be a host material for rare earth ions. The

  18. Improving breakdown voltage and self-heating effect for SiC LDMOS with double L-shaped buried oxide layers

    Science.gov (United States)

    Bao, Meng-tian; Wang, Ying

    2017-02-01

    In this paper, a SiC LDMOS with double L-shaped buried oxide layers (DL-SiC LDMOS) is investigated and simulated. The DL-SiC LDMOS consists of two L-shaped buried oxide layers and two SiC windows. Using 2-D numerical simulation software, Atlas, Silvaco TCAD, the breakdown voltage, and the self-heating effect are discussed. The double-L shaped buried oxide layers and SiC windows in the active area can introduce an additional electric field peak and make the electric field distribution more uniform in the drift region. In addition, the SiC windows, which connect the active area to the substrate, can facilitate heat dissipation and reduce the maximum lattice temperature of the device. Compared with the BODS structure, the DL-SiC LDMOS and BODS structures have the same device parameters, except of the buried oxide layers. The simulation results of DL-SiC LDMOS exhibits outstanding characteristics including an increase of the breakdown voltage by 32.6% to 1220 V, and a low maximum lattice temperature (535 K) at room temperature.

  19. Enhanced visible light photocatalytic H{sub 2} evolution of metal-free g-C{sub 3}N{sub 4}/SiC heterostructured photocatalysts

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Biao, E-mail: wangbiao@fjirsm.ac.cn [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); University of the Chinese Academy of Sciences, Beijing 100049 (China); Zhang, Jingtao, E-mail: zhangjtao@mail.sysu.edu.cn [State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510006 (China); Huang, Feng, E-mail: huangfeng@mail.sysu.edu.cn [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510006 (China)

    2017-01-01

    Highlights: • Novel g-C{sub 3}N{sub 4}/SiC composite was prepared by synthesizing g-C{sub 3}N{sub 4} on the surface of SiC. • g-C{sub 3}N{sub 4}/SiC composites exhibit much higher H{sub 2} production activity than pure g-C{sub 3}N{sub 4}. • The g-C{sub 3}N{sub 4}/SiC heterojunction mainly accounts for improved photocatalytic activity. - Abstract: g-C{sub 3}N{sub 4} has been attracting much attention for application in visible light photocatalytic water splitting due to its suitable band structure, and high thermal and chemical stability. However, the rapid recombination of photogenerated carriers has inhibited its wide use. For this reason, novel g-C{sub 3}N{sub 4}/SiC composites were prepared via in situ synthesis of g-C{sub 3}N{sub 4} on the surface of SiC, with which g-C{sub 3}N{sub 4} shows tight interaction (chemical bonding). The g-C{sub 3}N{sub 4}/SiC composites exhibit high stability in H{sub 2} production under irradiation with visible light (λ ≥ 420 nm), demonstrating a maximum of 182 μmol g{sup −1} h{sup −1}, being 3.4 times higher than that of pure g-C{sub 3}N{sub 4}. The enhanced photocatalytic H{sub 2} production ability for g-C{sub 3}N{sub 4}/SiC photocatalysts is primarily ascribed to the combined effects of enhanced separation of photogenerated carriers through efficient migration of electron and enlarged surface areas, in addition to the possible contributions of increased hydrophilicity of SiC and polymerization degree of g-C{sub 3}N{sub 4}. This study may provide new insights into the development of g-C{sub 3}N{sub 4}-based composites as stable and efficient photocatalysts for H{sub 2} production from water splitting.

  20. Deposition characteristics of titanium coating deposited on SiC fiber by cold-wall chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Xian, E-mail: luo_shenfan@hotmail.com; Wu, Shuai; Yang, Yan-qing; Jin, Na; Liu, Shuai; Huang, Bin

    2016-12-01

    The deposition characteristics of titanium coating on SiC fiber using TiCl{sub 4}-H{sub 2}-Ar gas mixture in a cold-wall chemical vapor deposition were studied by the combination of thermodynamic analysis and experimental studies. The thermodynamic analysis of the reactions in the TiCl{sub 4}-H{sub 2}-Ar system indicates that TiCl{sub 4} transforms to titanium as the following paths: TiCl{sub 4} → TiCl{sub 3} → Ti, or TiCl{sub 4} → TiCl{sub 3} → TiCl{sub 2} → Ti. The experimental results show that typical deposited coating contains two distinct layers: a TiC reaction layer close to SiC fiber and titanium coating which has an atomic percentage of titanium more than 70% and that of carbon lower than 30%. The results illustrate that a carbon diffusion barrier coating needs to be deposited if pure titanium is to be prepared. The deposition rate increases with the increase of temperature, but higher temperature has a negative effect on the surface uniformity of titanium coating. In addition, appropriate argon gas flow rate has a positive effect on smoothing the surface morphology of the coating. - Highlights: • Both thermodynamic analysis and experimental studies were adopted in this work. • The transformation paths of TiCl{sub 4} to Ti is: TiCl{sub 4} → TiCl{sub 3} → Ti, or TiCl{sub 4} → TiCl{sub 3} → TiCl{sub 2} → Ti. • Typical deposited Ti coating on SiC fiber contained two distinct layers. • Deposition temperature is important on deposition rate and morphologies. • Appropriate argon gas flow rate has a positive effect on smoothing of the coating.