AFM and FTIR characterization of microcrystalline Si obtained from isothermal annealing of Al/a-Si:H

Energy Technology Data Exchange (ETDEWEB)

Rojas-Lopez, M.; Orduna-Diaz, A.; Delgado-Macuil, R. [Centro de Investigacion en Biotecnologia Aplicada (CIBA), IPN, Tlaxcala, Tlax. 72197 (Mexico); Olvera-Hernandez, J. [Centro de Investigacion en Dispositivos Semiconductores (CIDS), BUAP, Puebla, Pue. 72570 (Mexico); Navarro-Contreras, H.; Vidal, M.A.; Saucedo, N.; Mendez-Garcia, V.H. [Instituto de Investigacion en Comunicacion Optica (IICO), UASLP, San Luis Potosi, S.L.P. 78100 (Mexico)

2007-04-15

Atomic force microscopy and Fourier transform infrared spectroscopy were used to investigate the morphology of the microcrystalline surface, and also the amorphous-crystalline structural transformation of a-Si:H films, isothermally annealed during several hours. Crystallization process was strongly influenced by the deposition of an Al layer on the surface of a-Si:H samples. Representative AFM images show the presence of grains, which increase in diameter with the annealing time. Relative crystallized fraction as a function of the annealing time can be described adequately by using the Avrami equation. The kinetic of this crystallization process suggest a two-dimensional growth of the Si nuclei. Fourier transform infrared measurements show the presence of an intense band near 512 cm{sup -1} associated to Si-Si bonding. We observed the relative diminishing of the intensity of the Si-H wagging mode at 694 cm{sup -1} with annealing time, suggesting effusion of hydrogen to the surface of microcrystalline films. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Local vibrational modes of the water dimer - Comparison of theory and experiment

Science.gov (United States)

Kalescky, R.; Zou, W.; Kraka, E.; Cremer, D.

2012-12-01

Local and normal vibrational modes of the water dimer are calculated at the CCSD(T)/CBS level of theory. The local H-bond stretching frequency is 528 cm-1 compared to a normal mode stretching frequency of just 143 cm-1. The adiabatic connection scheme between local and normal vibrational modes reveals that the lowering is due to mass coupling, a change in the anharmonicity, and coupling with the local HOH bending modes. The local mode stretching force constant is related to the strength of the H-bond whereas the normal mode stretching force constant and frequency lead to an erroneous underestimation of the H-bond strength.

First-Principles Studies of Functionalized Si(111) in Air and in Water

Science.gov (United States)

Li, Yan; Galli, Giulia

2011-03-01

We have investigated structural, electronic and vibrational properties of hydrogen and methyl-terminated Si(111) surfaces both in air and in contact with water, by combining density functional theory and many-body perturbation theory within the GW approximations. The computed surface dipole moments for both H-Si(111) and CH3-Si(111) surfaces were found to be consistent with measured electron affinities (EAs), and can be explain by simple electronegative trends. While GW self-energy corrections greatly improve the absolute values of EAs, the EA difference of the two surfaces remains overestimated by about 0.3 eV. The variations in CH3 frequencies, e.g. the umbrella mode and CH stretching mode, for the surface in air and water are also well reproduced by our calculations. The influence exerted by the adsorption of water molecules on the hydrophobic H-Si(111) and CH3-(111) surfaces, in particular, on the EAs and the surface vibrational frequencies will be discussed and compared with recent experiments. This work was funded by NSF under Grant No. CHE-0802907.

The carbon monoxide stretching modes in camphor-bound cytochrome P-450cam. The effect of solvent conditions, temperature, and pressure.

Science.gov (United States)

Schulze, H; Ristau, O; Jung, C

1994-09-15

The effect of pH, monovalent cations, glycerol, temperature, and pressure on the carbonmonoxy (CO) stretching mode of camphor-bound cytochrome P-450cam (CYP 101) was studied. Two effects, band overlap and frequency shift, have been observed. The CO stretch infrared band located at about 1940 cm-1 is asymmetric because of the overlap of three bands at about 1931 cm-1, 1939 cm-1, and 1942 cm-1 with strongly different populations. Reducing the temperature or increasing the pressure leads to splitting the band or switching the asymmetry from the lower energy side to the higher energy side of the infrared band. The overlap of several CO stretch bands indicates conformational substates within the heme pocket. A frequency shift of the predominantly populated band is observed by changing all the parameters mentioned. The pH-induced frequency shift follows an S-shape with the pK at 6.2, which matches the pK observed for the pH-induced high-spin/low-spin transition. Conformational changes on the proximal heme side are suggested to be the origin. Monovalent cations at saturating concentration induce a small frequency shift depending on the ion radius. The potassium ion is the one that induces a CO stretch frequency with the highest wave-number while sodium and lithium (smaller radii) and rubidium and caesium ion (larger radii) have diminished values, which is supporting evidence for the special function of the potassium ion within the structure. Glycerol and hydrostatic pressure induce a red shift of the CO stretching frequency. Forced contact of the polar hydroxyl group of Thr252 of the I helix induced by pressure and indirectly by glycerol is suggested to change the CO dipole moment, reflecting in the decreased CO stretching frequency.

Effect of antisymmetric C–H stretching excitation on the dynamics of O({sup 1}D) + CH{sub 4} → OH + CH{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Pan, Huilin; Yang, Jiayue; Zhang, Dong; Shuai, Quan; Jiang, Bo [State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning 116023 (China); Dai, Dongxu; Wu, Guorong, E-mail: wugr@dicp.ac.cn, E-mail: xmyang@dicp.ac.cn; Yang, Xueming, E-mail: wugr@dicp.ac.cn, E-mail: xmyang@dicp.ac.cn [State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning 116023 (China); Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China)

2014-04-21

The effect of antisymmetric C–H stretching excitation of CH{sub 4} on the dynamics and reactivity of the O({sup 1}D) + CH{sub 4} → OH + CD{sub 3} reaction at the collision energy of 6.10 kcal/mol has been investigated using the crossed-beam and time-sliced velocity map imaging techniques. The antisymmetric C–H stretching mode excited CH{sub 4} molecule was prepared by direct infrared excitation. From the measured images of the CH{sub 3} products with the infrared laser on and off, the product translational energy and angular distributions were derived for both the ground and vibrationally excited reactions. Experimental results show that the vibrational energy of the antisymmetric stretching excited CH{sub 4} reagent is channeled exclusively into the vibrational energy of the OH co-products and, hence, the OH products from the excited-state reaction are about one vibrational quantum hotter than those from the ground-state reaction, and the product angular distributions are barely affected by the vibrational excitation of the CH{sub 4} reagent. The reactivity was found to be suppressed by the antisymmetric stretching excitation of CH{sub 4} for all observed CH{sub 3} vibrational states. The degree of suppression is different for different CH{sub 3} vibrational states: the suppression is about 40%–60% for the ground state and the umbrella mode excited CH{sub 3} products, while for the CH{sub 3} products with one quantum symmetric stretching mode excitation, the suppression is much less pronounced. In consequence, the vibrational state distribution of the CH{sub 3} product from the excited-state reaction is considerably different from that of the ground-state reaction.

FTIR and electrical characterization of a-Si:H layers deposited by PECVD at different boron ratios

Energy Technology Data Exchange (ETDEWEB)

Orduna-Diaz, A., E-mail: abdu@susu.inaoep.mx [Instituto Nacional de Astrofisica, Optica y Electronica, Luis Enrique Erro No. 1, Tonantzintla, Puebla 72840 (Mexico); Trevino-Palacios, C.G. [Instituto Nacional de Astrofisica, Optica y Electronica, Luis Enrique Erro No. 1, Tonantzintla, Puebla 72840 (Mexico); Rojas-Lopez, M.; Delgado-Macuil, R.; Gayou, V.L. [Centro de Investigacion en Biotecnologia Aplicada (CIBA), IPN, Tlaxcala, Tlax. 72197 (Mexico); Torres-Jacome, A. [Instituto Nacional de Astrofisica, Optica y Electronica, Luis Enrique Erro No. 1, Tonantzintla, Puebla 72840 (Mexico)

2010-10-25

Hydrogenated amorphous silicon (a-Si:H) has found applications in flat panel displays, photovoltaic solar cell and recently has been employed in boron doped microbolometer array. We have performed electrical and structural characterizations of a-Si:H layers prepared by plasma enhanced chemical vapor deposition (PECVD) method at 540 K on glass substrates at different diborane (B{sub 2}H{sub 6}) flow ratios (500, 250, 150 and 50 sccm). Fourier transform infrared spectroscopy (FTIR) measurements obtained by specular reflectance sampling mode, show Si-Si, B-O, Si-H, and Si-O vibrational modes (611, 1300, 2100 and 1100 cm{sup -1} respectively) with different strengths which are associated to hydrogen and boron content. The current-voltage curves show that at 250 sccm flow of boron the material shows the lowest resistivity, but for the 150 sccm boron flow it is obtained the highest temperature coefficient of resistance (TCR).

H-mode physics

International Nuclear Information System (INIS)

Itoh, Sanae.

1991-06-01

After the discovery of the H-mode in ASDEX ( a tokamak in Germany ) the transition between the L-mode ( Low confinement mode ) and H-mode ( High confinement mode ) has been observed in many tokamaks in the world. The H-mode has made a breakthrough in improving the plasma parameters and has been recognized to be a universal phenomena. Since its discovery, the extensive studies both in experiments and in theory have been made. The research on H-mode has been casting new problems of an anomalous transport across the magnetic surface. This series of lectures will provide a brief review of experiments for explaining H-mode and a model theory of H-mode transition based on the electric field bifurcation. If the time is available, a new theoretical model of the temporal evolution of the H-mode will be given. (author)

Mode analysis and structure parameter optimization of a novel SiGe-OI rib optical waveguide

Energy Technology Data Exchange (ETDEWEB)

Feng Song; Gao Yong; Yang Yuan [Department of Electronic Engineering, Xi' an University of Technology, Xi' an 710048 (China); Feng Yuchun, E-mail: vonfs@yahoo.com.c [Key Laboratories of Optoelectronic Devices and Systems, Shenzhen University, Shenzhen 518060 (China)

2009-08-15

The mode of a novel SiGe-OI optical waveguide is analyzed, and its single-mode conditions are derived. The Ge content and structure parameters of SiGe-OI optical waveguides are respectively optimized. Under an operation wavelength of 1300 nm, the structures of SiGe-OI rib optical waveguides are built and analyzed with Optiwave software, and the optical field and transmission losses of the SiGe-OI rib optical waveguides are analyzed. The optimization results show that when the structure parameters H, h, W are respectively 500 nm, 250 nm, 500 nm and the Ge content is 5%, the total power loss of SiGe-OI rib waveguides is 0.3683 dB/cm considering the loss of radiation outside the waveguides and materials, which is less than the traditional value of 0.5 dB/cm. The analytical technique for SiGe-OI optical waveguides and structure parameters computed by this paper are proved to be accurate and computationally efficient compared with the beam propagation method (BPM) and the experimental results. (semiconductor devices)

Retraction

Energy Technology Data Exchange (ETDEWEB)

Liu, Zhiheng [Vanderbilt University; Feldman, Leonard C [ORNL; Tolk, Norman H. [Vanderbilt University; Zhang, Zhenyu [ORNL; Cohen, Philip [University of Minnesota

2012-01-01

IN OUR 2006 REPORT, DESORPTION OF H FROM SI(111) BY RESONANT EXCITATION OF THE Si-H vibrational stretch mode (1), we reported resonant photodesorption of hydrogen from a Si(111) surface using tunable infrared radiation that corresponded to the Si-H vibrational stretch mode. Our recent attempts to reproduce these experiments have been unsuccessful, and the free electron laser facility at Vanderbilt, a unique light source for this experiment, has shut down, prohibiting further research. Because our conclusions are now in question, we retract the Report.

Stretch-dependent slow force response in isolated rabbit myocardium is Na+ dependent.

Science.gov (United States)

von Lewinski, Dirk; Stumme, Burkhard; Maier, Lars S; Luers, Claus; Bers, Donald M; Pieske, Burkert

2003-03-15

Stretch induces functional and trophic effects in mammalian myocardium via various signal transduction pathways. We tested stretch signal transduction on immediate and slow force response (SFR) in rabbit myocardium. Experiments were performed in isolated right ventricular muscles from adult rabbit hearts (37 degrees C, 1 Hz stimulation rate, bicarbonate-buffer). Muscles were rapidly stretched from 88% of optimal length (L88) to near optimal length (L98) for functional analysis. The resulting immediate and slow increases in twitch force (first phase and SFR, respectively) were assessed at reduced [Na+]o or without and with blockade of stretch activated ion channels (SACs), angiotensin-II (AT1) receptors, endothelin-A (ET(A)) receptors, Na+/H+-exchange (NHE1), reverse mode Na+/Ca2+-exchange (NCX), or Na+/K+-ATPase. The effects of stretch on sarcoplasmic reticulum Ca2+-load were characterized using rapid cooling contractures (RCCs). Intracellular pH was measured in BCECF-AM loaded muscles, and action potential duration (APD) was assessed using floating electrodes. On average, force increased to 216+/-8% of the pre-stretch value during the immediate phase, followed by a further increase to 273+/-10% during the SFR (n=81). RCCs significantly increased during SFR, whereas pH and APD did not change. Neither inhibition of SACs, AT1, or ET(A) receptors affected the stretch-dependent immediate phase nor SFR. In contrast, SFR was reduced by NHE inhibition and almost completely abolished by reduced [Na+]o or inhibition of reverse-mode NCX, whereas increased SFR was seen after raising [Na+]i by Na+/K+-ATPase inhibition. The data demonstrate the existence of a delayed, Na+- and Ca2+-dependent but pH and APD independent SFR to stretch in rabbit myocardium. This inotropic response appears to be independent of autocrine/paracrine AT1 or ET(A) receptor activation, but mediated through stretch-induced activation of NHE and reverse mode NCX.

Nitrogen doping efficiency during vapor phase epitaxy of 4H-SiC

Energy Technology Data Exchange (ETDEWEB)

Rowland, L.B.; Brandt, C.D. [Northrop Grumman Science and Technology Center, Pittsburgh, PA (United States); Burk, A.A. Jr. [Northrop Grumman Advanced Technology Lab., Baltimore, MD (United States)

1998-06-01

This work examines the interrelationships among doping efficiency, mole fraction, and Si/C ratio for intentional doping of 4H-SiC during vapor phase epitaxy using N{sub 2}. For four Si/C ratios, the doping concentration increased linearly as a function of increasing N{sub 2} partial pressure with a slope of 1.0 {+-} 0.03. Variation of propane mole fraction while the SiH{sub 4} and N{sub 2} mole fractions were kept constant revealed two different modes of nitrogen incorporation, corresponding to carbon-rich and silicon-rich conditions. (orig.) 14 refs.

Theoretical and experimental investigations of thickness- stretch modes in 1-3 piezoelectric composites

International Nuclear Information System (INIS)

Yang, Z T; Zeng, D P; He, M; Wang, H

2015-01-01

Bulk piezoelectric ceramics operating in thickness-stretch (TSt) modes have been widely used in acoustic-related devices. However, the fundamental TSt waves are always coupled with other modes, and the occurrence of these spurious modes in bulk piezoelectric ceramics affects its performance. To suppress the spurious modes, 1-3 piezoelectric composites are promising candidates. However, theoretical modeling of multiphase ceramic composite objects is very complex. In this study, a 1-3 piezoelectric composite sample and a bulk piezoelectric sample are fabricated. The electrical impedance of these two samples are compared. A simple analytical TSt vibration mode from the three dimensional equations of linear piezoelectricity is used to model the performance of 1-3 piezoelectric composites. The theoretical results agree well with the experimental results. (paper)

Etch pit investigation of free electron concentration controlled 4H-SiC

Science.gov (United States)

Kim, Hong-Yeol; Shin, Yun Ji; Kim, Jung Gon; Harima, Hiroshi; Kim, Jihyun; Bahng, Wook

2013-04-01

Etch pits were investigated using the molten KOH selective etching method to examine dependence of etch pit shape and size on free electron concentration. The free electron concentrations of highly doped 4H-silicon carbide (SiC) were controlled by proton irradiation and thermal annealing, which was confirmed by a frequency shift in the LO-phonon-plasmon-coupled (LOPC) mode on micro-Raman spectroscopy. The proton irradiated sample with 5×1015 cm-2 fluence and an intrinsic semi-insulating sample showed clearly classified etch pits but different ratios of threading screw dislocation (TSD) and threading edge dislocation (TED) sizes. Easily classified TEDs and TSDs on proton irradiated 4H-SiC were restored as highly doped 4H-SiC after thermal annealing due to the recovered carrier concentrations. The etched surface of proton irradiated 4H-SiC and boron implanted SiC showed different surface conditions after activation.

Si/C and H coadsorption at 4H-SiC{0001} surfaces

Energy Technology Data Exchange (ETDEWEB)

Wachowicz, E., E-mail: elwira@ifd.uni.wroc.pl [Institute of Experimental Physics, University of Wrocław, Plac M. Borna 9, PL-50-204 Wrocław (Poland); Interdisciplinary Centre for Mathematical and Computational Modelling, University of Warsaw, Pawińskiego 5a, PL-02-106 Warsaw (Poland)

2016-06-15

Highlights: • Si on C-terminated and C on Si-terminated surface adsorb in the H{sub 3} hollow site. • The preferred adsorption site is in contrary to the stacking order of bulk crystal. • The presence of hydrogen increases the adsorption energy of Si/C. • Hydrogen weakens the bonds between the adsorbed Si or C and the surface. • Carbon adsorbs on top of the surface carbon on the C-terminated surface. • With both C and H on Si-terminated surface the surface state vanishes. - Abstract: Density functional theory (DFT) study of adsorption of 0.25 monolayer of either Si or C on 4H-SiC{0001} surfaces is presented. The adsorption in high-symmetry sites on both Si- and C-terminated surfaces was examined and the influence of the preadsorbed 0.25 ML of hydrogen on the Si/C adsorption was considered. It was found out that for Si on C-terminated surface and C on Si-terminated the most favourable is threefolded adsorption site on both clean and H-precovered surface. This is contrary to the bulk crystal stacking order which would require adsorption on top of the topmost surface atom. In those cases, the presence of hydrogen weakens the bonding of the adsorbate. Carbon on the C-terminated surface, only binds on-top of the surface atom. The C−C bond-length is almost the same for the clean surface and for one with H and equals to ∼1.33 Å which is shorter by ∼0.2 than in diamond. The analysis of the electronic structure changes under adsorption is also presented.

C-H and C-C activation of n -butane with zirconium hydrides supported on SBA15 containing N-donor ligands: [(≡SiNH-)(≡SiX-)ZrH2], [(≡SiNH-)(≡SiX-)2ZrH], and[(≡SiN=)(≡SiX-)ZrH] (X = -NH-, -O-). A DFT study

KAUST Repository

Pasha, Farhan Ahmad; Bendjeriou-Sedjerari, Anissa; Huang, Kuo-Wei; Basset, Jean-Marie

2014-01-01

: [(≡SiNH-)(≡SiO-)ZrH2] (A), [(≡SiNH-)2ZrH2] (B), [(≡SiNH-)(≡SiO-) 2ZrH] (C), [(≡SiNH-)2(≡SiO-)ZrH] (D), [(≡SiN=)(≡Si-O-)ZrH] (E), and [(≡SiN=)(≡SiNH-)ZrH] (F). The roles of these hydrides have been investigated in C-H/C-C bond activation and cleavage

UV and IR laser induced ablation of Al2O3/SiN:H and a-Si:H/SiN:H

Directory of Open Access Journals (Sweden)

Schutz-Kuchly T.

2014-01-01

Full Text Available Experimental work on laser induced ablation of thin Al2O3(20 nm/SiN:H (70 nm and a-Si:H (20 nm/SiN:H (70 nm stacks acting, respectively, as p-type and n-type silicon surface passivation layers is reported. Results obtained using two different laser sources are compared. The stacks are efficiently removed using a femtosecond infra-red laser (1030 nm wavelength, 300 fs pulse duration but the underlying silicon surface is highly damaged in a ripple-like pattern. This collateral effect is almost completely avoided using a nanosecond ultra-violet laser (248 nm wavelength, 50 ns pulse duration, however a-Si:H flakes and Al2O3 lace remain after ablation process.

Nanostructures based in boro nitride thin films deposited by PLD onto Si/Si3N4/DLC substrate

International Nuclear Information System (INIS)

Roman, W S; Riascos, H; Caicedo, J C; Ospina, R; Tirado-MejIa, L

2009-01-01

Diamond-like carbon and boron nitride were deposited like nanostructered bilayer on Si/Si 3 N 4 substrate, both with (100) crystallographic orientation, these films were deposited through pulsed laser technique (Nd: YAG: 8 Jcm -2 , 9ns). Graphite (99.99%) and boron nitride (99.99%) targets used to growth the films in argon atmosphere. The thicknesses of bilayer were determined with a perfilometer, active vibration modes were analyzed using infrared spectroscopy (FTIR), finding bands associated around 1400 cm -1 for B - N bonding and bands around 1700 cm -1 associated with C=C stretching vibrations of non-conjugated alkenes and azometinic groups, respectively. The crystallites of thin films were analyzed using X-ray diffraction (XRD) and determinated the h-BN (0002), α-Si 3 N 4 (101) phases. The aim of this study is to relate the dependence on physical and chemical characteristics of the system Si/Si 3 N 4 /DLC/BN with gas pressure adjusted at the 1.33, 2.67 and 5.33 Pa values.

Characterization of μc-Si:H/a-Si:H tandem solar cell structures by spectroscopic ellipsometry

International Nuclear Information System (INIS)

Murata, Daisuke; Yuguchi, Tetsuya; Fujiwara, Hiroyuki

2014-01-01

In order to perform the structural characterization of Si thin-film solar cells having submicron-size rough textured surfaces, we have developed an optical model that can be utilized for the spectroscopic ellipsometry (SE) analysis of a multilayer solar cell structure consisting of hydrogenated amorphous silicon (a-Si:H) and microcrystalline silicon (μc-Si:H) layers fabricated on textured SnO 2 :F substrates. To represent the structural non-uniformity in the textured structure, the optical response has been calculated from two regions with different thicknesses of the Si layers. Moreover, in the optical model, the interface layers are modeled by multilayer structures assuming two-phase composites and the volume fractions of the phases in the layers are controlled by the structural curvature factor. The polarized reflection from the μc-Si:H layer that shows extensive surface roughening during the growth has also been modeled. In this study, a state-of-the-art solar cell structure with the textured μc-Si:H (2000 nm)/ZnO (100 nm)/a-Si:H (200 nm)/SnO 2 :F/glass substrate structure has been characterized. The μc-Si:H/a-Si:H textured structure deduced from our SE analysis shows remarkable agreement with that observed by transmission electron microscopy. From the above results, we have demonstrated the high-precision characterization of highly-textured μc-Si:H/a-Si:H solar cell structures. - Highlights: • Characterization of textured μc-Si:H/a-Si:H solar cell structures by ellipsometry • A new optical model using surface area and multilayer models • High precision characterization of submicron-range rough interface structures

Ab initio chemical kinetics for SiH3 reactions with Si(x)H2x+2 (x = 1-4).

Science.gov (United States)

Raghunath, P; Lin, M C

2010-12-30

Gas-phase kinetics and mechanisms of SiH(3) reactions with SiH(4), Si(2)H(6), Si(3)H(8), and Si(4)H(10), processes of relevance to a-Si thin-film deposition, have been investigated by ab initio molecular orbital and transition-state theory (TST) calculations. Geometric parameters of all the species involved in the title reactions were optimized by density functional theory at the B3LYP and BH&HLYP levels with the 6-311++G(3df,2p) basis set. The potential energy surface of each reaction was refined at the CCSD(T)/6-311++G(3df,2p) level of theory. The results show that the most favorable low energy pathways in the SiH(3) reactions with these silanes occur by H abstraction, leading to the formation of SiH(4) + Si(x)H(2x+1) (silanyl) radicals. For both Si(3)H(8) and n-Si(4)H(10) reactions, the lowest energy barrier channels take place by secondary Si-H abstraction, yielding SiH(4) + s-Si(3)H(7) and SiH(4) + s-Si(4)H(9), respectively. In the i-Si(4)H(10) reaction, tertiary Si-H abstraction has the lowest barrier producing SiH(4) + t-Si(4)H(9). In addition, direct SiH(3)-for-X substitution reactions forming Si(2)H(6) + X (X = H or silanyls) can also occur, but with significantly higher reaction barriers. A comparison of the SiH(3) reactions with the analogous CH(3) reactions with alkanes has been made. The rate constants for low-energy product channels have been calculated for the temperature range 300-2500 K by TST with Eckart tunneling corrections. These results, together with predicted heats of formation of various silanyl radicals and Si(4)H(10) isomers, have been tabulated for modeling of a-Si:H film growth by chemical vapor deposition.

A step-by-step experiment of 3C-SiC hetero-epitaxial growth on 4H-SiC by CVD

Energy Technology Data Exchange (ETDEWEB)

Xin, Bin [School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi’an 710071 (China); Jia, Ren-Xu, E-mail: rxjia@mail.xidian.edu.cn [School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi’an 710071 (China); Hu, Ji-Chao [School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi’an 710071 (China); Tsai, Cheng-Ying [Graduate Institute of Electronics Engineering, National Taiwan University, 10617 Taipei, Taiwan (China); Lin, Hao-Hsiung, E-mail: hhlin@ntu.edu.tw [Graduate Institute of Electronics Engineering, National Taiwan University, 10617 Taipei, Taiwan (China); Graduate Institute of Photonics and Optoelectronics, National Taiwan University, 10617 Taipei, Taiwan (China); Zhang, Yu-Ming [School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi’an 710071 (China)

2015-12-01

Highlights: • A step-by-step experiment to investigate the growth mechanism of SiC hetero-epitaxial is proposed. • It has shown protrusive regular “hill” morphology with much lower density of DPB defect in our experiment, which normally were in high density with shallow groove. Based on the defect morphology, an anisotropy migration rate phenomenon of adatoms has been regarded as forming the morphology of DPB defects and a new “DPB defects assist epitaxy” growth mode has been proposed based on Frank-van der Merwe growth mode. - Abstract: To investigate the growth mechanism of hetero-epitaxial SiC, a step-by-step experiment of 3C-SiC epitaxial layers grown on 4H-SiC on-axis substrates by the CVD method are reported in this paper. Four step experiments with four one-quarter 4H-SiC wafers were performed. Optical microscopy and atomic force microscopy (AFM) were used to characterize the morphology of the epitaxial layers. It was previously found that the main factor affecting the epilayer morphology was double-positioning boundary (DPB) defects, which normally were in high density with shallow grooves. However, a protrusive regular “hill” morphology with a much lower density was shown in our experiment in high-temperature growth conditions. The anisotropic migration of adatoms is regarded as forming the morphology of DPB defects, and a new “DPB defects assist epitaxy” growth mode has been proposed based on the Frank-van der Merwe growth mode. Raman spectroscopy and X-ray diffraction were used to examine the polytypes and the quality of the epitaxial layers.

Influence of H on the composition and atomic concentrations of 'N-rich' plasma deposited SiOxNyHz films

International Nuclear Information System (INIS)

Prado, A. del; San Andres, E.; Martil, I.; Gonzalez-Diaz, G.; Bohne, W.; Roehrich, J.; Selle, B.

2004-01-01

The influence of H on the composition and atomic concentrations of Si, O, and N of plasma deposited SiO x N y H z films was investigated. The bonding scheme of H was analyzed by Fourier-transform infrared spectroscopy. The composition and absolute concentrations of all the species present in the SiO x N y H z , including H, was measured by heavy-ion elastic recoil detection analysis (HI-ERDA). Samples were deposited from SiH 4 , O 2 , and N 2 gas mixtures, with different gas flow ratios in order to obtain compositions ranging from SiN y H z to SiO 2 . Those samples deposited at higher SiH 4 partial pressures show both Si-H and N-H bonds, while those deposited at lower SiH 4 partial pressures show N-H bonds only. The Si-H and N-H bond concentrations were found to be proportional to the N concentration. The concentration of H was evaluated from the Si-H and N-H stretching absorption bands and compared to the HI-ERDA results, finding good agreement between both measurements. The deviation from H-free stoichiometric SiO x N y composition due to the presence of N-H bonds results in an effective coordination number of N to produce Si-N bonds lower than 3. By fitting the experimental composition data to a theoretical model taking into account the influence of N-H bonds, the actual concentration of N-H bonds was obtained, making evident the presence of nonbonded H. The presence of Si-H and Si-Si bonds was found to partially compensate the effect of N-H bonds, from the point of view of the relative N and Si contents. Finally, the presence of N-H bonds results in a lower Si atom concentration with respect to the stoichiometric film, due to a replacement of Si atoms by H atoms. This decrease of the Si concentration is lower in those films containing Si-H and Si-Si bonds. A model was developed to calculate the Si, O, and N atom concentrations taking into account the influence of N-H, Si-H, and Si-Si bonds, and was found to be in perfect agreement with the experimental data

Nanostructures based in boro nitride thin films deposited by PLD onto Si/Si{sub 3}N{sub 4}/DLC substrate

Energy Technology Data Exchange (ETDEWEB)

Roman, W S; Riascos, H [Grupo Plasma, Laser y Aplicaciones, Universidad Tecnologica de Pereira (Colombia); Caicedo, J C [Grupo de PelIculas Delgadas, Universidad del Valle, Cali (Colombia); Ospina, R [Laboratorio de Plasma, Universidad Nacional de Colombia, sede Manizales (Colombia); Tirado-MejIa, L, E-mail: hriascos@utp.edu.c [Laboratorio de Optoelectronica, Universidad del Quindio (Colombia)

2009-05-01

Diamond-like carbon and boron nitride were deposited like nanostructered bilayer on Si/Si{sub 3}N{sub 4} substrate, both with (100) crystallographic orientation, these films were deposited through pulsed laser technique (Nd: YAG: 8 Jcm{sup -2}, 9ns). Graphite (99.99%) and boron nitride (99.99%) targets used to growth the films in argon atmosphere. The thicknesses of bilayer were determined with a perfilometer, active vibration modes were analyzed using infrared spectroscopy (FTIR), finding bands associated around 1400 cm{sup -1} for B - N bonding and bands around 1700 cm{sup -1} associated with C=C stretching vibrations of non-conjugated alkenes and azometinic groups, respectively. The crystallites of thin films were analyzed using X-ray diffraction (XRD) and determinated the h-BN (0002), alpha-Si{sub 3}N{sub 4} (101) phases. The aim of this study is to relate the dependence on physical and chemical characteristics of the system Si/Si{sub 3}N{sub 4}/DLC/BN with gas pressure adjusted at the 1.33, 2.67 and 5.33 Pa values.

Influence of a-Si:H deposition power on surface passivation property and thermal stability of a-Si:H/SiNx:H stacks

Directory of Open Access Journals (Sweden)

Hua Li

2012-06-01

Full Text Available The effectiveness of hydrogenated amorphous silicon (a-Si:H layers for passivating crystalline silicon surfaces has been well documented in the literature for well over a decade. One limitation of such layers however has arisen from their inability to withstand temperatures much above their deposition temperature without significant degradation. This limitation is of importance particularly with multicrystalline silicon materials where temperatures of at least 400°C are needed for effective hydrogenation of the crystallographic defects such as grain boundaries. To address this limitation, in this work the surface passivation quality and thermal stability of a stack passivating system, combining a layer of intrinsic a-Si:H and a capping layer of silicon nitride (SiNx:H, on p-type crystalline silicon wafers is studied and optimized. In particular the sensitivity of different microwave (MW power levels for underlying a-Si:H layer deposition are examined. Both effective minority carrier lifetime (ζeff measurement and Fourier transform infrared (FTIR spectrometry were employed to study the bonding configurations, passivating quality and thermal stability of the a-Si:H/SiNx:H stacks. It is established that the higher MW power could result in increased as-deposited ζeff and implied Voc (iVoc values, indicating likely improved surface passivation quality, but that this combination degrades more quickly when exposed to prolonged thermal treatments. The more dihydride-rich film composition corresponding to the higher MW power appears to be beneficial for bond restructuring by hydrogen interchanges when exposed to short term annealing, however it also appears more susceptible to providing channels for hydrogen out-effusion which is the likely cause of the poorer thermal stability for prolonged high temperature exposure compared with stacks with underlying a-Si:H deposited with lower MW power.

L to H-mode Power Threshold and Confinement Characteristics of H-modes in KSTAR

Energy Technology Data Exchange (ETDEWEB)

Kim, H. S.; Na, Y.S., E-mail: ftwalker.hyuns@gmail.com [Seoul National University, Seoul (Korea, Republic of); Ahn, J. W. [Oak Ridge National Laboratory, Oak Ridge (United States); Jeon, Y. M.; Yoon, S. W.; Lee, K. D.; Ko, W. H.; Bae, Y. S.; Kim, W. C.; Kwak, J. G. [National Fusion Research Institute, Daejeon (Korea, Republic of)

2012-09-15

Full text: Since KSTAR has obtained the H-mode in 2010 campaign, H-mode plasmas were routinely obtained with combined heating of NBI with maximum power of 1.5 MW and ECRH with maximum power of {approx} 0.3 MW and {approx} 0.6 MW for 110 GHz and 170 GHz, respectively. The L- to H-mode power threshold and confinement properties of KSTAR H-modes are investigated in this work. Firstly, the L- to H-mode power threshold and the power loss to the seperatrix are calculated by power balance analysis for about collected 400 shots. As a result, a trend of roll-over is observed in the power threshold of KSTAR H-mode compared with the multi-machine power threshold scaling in the low density regime. Dependence of the power threshold on other parameters are also investigated such as the X-point position and shaping parameters like as triangularity and elongation. In addition, the reason of reduction of power threshold in 2011 campaign compared with that in 2010 is addressed. Secondly, the confinement enhancement factors are calculated to evaluate the performance of KSTAR H-modes. The calculated H{sub 89-p} and H{sub 98} (y, 2) represent that the confinement is enhanced in most KSTAR H-mode discharges. Interestingly, even in L-mode phases, confinement is observed to be enhanced against the multi-machine scalings. H{sub exp} factor is newly introduced to evaluate the amount of confinement improvement in the H-mode phase compared with the L-mode phase in a single discharge. H{sub exp} exhibits that the global energy confinement time of the H-mode phase is improved about 1.3 - 2.0 times compared with that of the L-mode phase. Finally, interpretive and predictive numerical simulations are carried out using the ASTRA code for typical KSTAR H-mode discharges. The Weiland model and the GLF23 model are employed for calculating the anomalous contributions of both electron and ion heat transport in predictive simulations. For the H-mode phase, the Weiland model reproduces the experiment

In situ study of nitrobenzene grafting on Si(111)-H surfaces by infrared spectroscopic ellipsometry

Energy Technology Data Exchange (ETDEWEB)

Rappich, J. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Institut fuer Silizium-Photovoltaik, Kekulestr. 5, 12489 Berlin (Germany); Hinrichs, K. [ISAS - Institute for Analytical Sciences, Department Berlin, Albert-Einstein-Str. 9, 12489 Berlin (Germany)

2009-12-15

The binding of nitrobenzene (NB) molecules from a solution of 4-nitrobenzene-diazonium-tetrafluoroborate on a Si(111)-H surface was investigated during the electrochemical processing in diluted sulphuric acid by means of infrared spectroscopic ellipsometry (IR-SE). The grafting was monitored by an increase in specific IR absorption bands due to symmetric and anti-symmetric NO{sub 2} stretching vibrations in the 1400-1700 cm{sup -1} regime. The p- and s-polarized reflectances were recorded within 20 s for each spectrum only. NB molecules were detected when bonded to the Si(111) surface but not in the 2 mM solution itself. Oxide formation on the NB grafted Si surface was observed after drying in inert atmosphere and not during the grafting process in the aqueous solution. (author)

Anharmonic vibrational modes of chemisorbed H on the Rh(001) surface

International Nuclear Information System (INIS)

Hamann, D.R.; Feibelman, P.J.

1988-01-01

The potential for H atoms in the vicinity of the fourfold hollow chemisorption site on the Rh(001) surface at monolayer coverage is calculated using local-density-functional theory, and the linear-augmented-plane-wave method. The potential is found to contain important anharmonic components, one that couples parallel and perpendicular motion, and another producing azimuthal anisotropy. Variational solutions are found for the ground and low-lying excited states of H and D in this potential. The fundamental asymmetric- and symmetric-stretch H vibrational excitations are found to have energies of 67 and 92 meV. The latter agrees with recent experimental results, and higher-lying experimental modes are interpreted as mixed excitations. Comparisons are made with spring-constant models, calculated potentials for H on Ni and Pd(001), and theories of Bloch states for H on Ni

Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation

Science.gov (United States)

Akiyama, Toru; Hori, Shinsuke; Nakamura, Kohji; Ito, Tomonori; Kageshima, Hiroyuki; Uematsu, Masashi; Shiraishi, Kenji

2018-04-01

The reaction processes at the interface between SiC with 4H structure (4H-SiC) and SiO2 during wet oxidation are investigated by electronic structure calculations within the density functional theory. Our calculations for 4H-SiC/SiO2 interfaces with various orientations demonstrate characteristic features of the reaction depending on the crystal orientation of SiC: On the Si-face, the H2O molecule is stable in SiO2 and hardly reacts with the SiC substrate, while the O atom of H2O can form Si-O bonds at the C-face interface. Two OH groups are found to be at least necessary for forming new Si-O bonds at the Si-face interface, indicating that the oxidation rate on the Si-face is very low compared with that on the C-face. On the other hand, both the H2O molecule and the OH group are incorporated into the C-face interface, and the energy barrier for OH is similar to that for H2O. By comparing the calculated energy barriers for these reactants with the activation energies of oxide growth rate, we suggest the orientation-dependent rate-limiting processes during wet SiC oxidation.

C-H and C-C activation of n -butane with zirconium hydrides supported on SBA15 containing N-donor ligands: [(≡SiNH-)(≡SiX-)ZrH2], [(≡SiNH-)(≡SiX-)2ZrH], and[(≡SiN=)(≡SiX-)ZrH] (X = -NH-, -O-). A DFT study

KAUST Repository

Pasha, Farhan Ahmad

2014-07-01

Density functional theory (DFT) was used to elucidate the mechanism of n-butane hydrogenolysis (into propane, ethane, and methane) on well-defined zirconium hydrides supported on SBA15 coordinated to the surface via N-donor surface pincer ligands: [(≡SiNH-)(≡SiO-)ZrH2] (A), [(≡SiNH-)2ZrH2] (B), [(≡SiNH-)(≡SiO-) 2ZrH] (C), [(≡SiNH-)2(≡SiO-)ZrH] (D), [(≡SiN=)(≡Si-O-)ZrH] (E), and [(≡SiN=)(≡SiNH-)ZrH] (F). The roles of these hydrides have been investigated in C-H/C-C bond activation and cleavage. The dihydride A linked via a chelating [N,O] surface ligand was found to be more active than B, linked to the chelating [N,N] surface ligand. Moreover, the dihydride zirconium complexes are also more active than their corresponding monohydrides C-F. The C-C cleavage step occurs preferentially via β-alkyl transfer, which is the rate-limiting step in the alkane hydrogenolysis. The energetics of the comparative pathways over the potential energy surface diagram (PES) reveals the hydrogenolysis of n-butane into propane and ethane. © 2014 American Chemical Society.

The H-mode operational window as determined from the ITER H-mode database

International Nuclear Information System (INIS)

Ryter, F.; Kardaun, O.J.W.F.; Stroth, U.

1994-01-01

The H-mode is a promising regime for fusion reactors and it is essential to be able to predict its operational window in future devices. The 'H-Mode Database Working Group' started in 1992 to gather, analyze and compare H-mode threshold data from several divertor tokamaks so that predictions could be made. The database and first results were presented and the threshold database has been improved and extended since. The work has two objectives: 1) to predict the minimum heating power necessary to reach the H-mode in future devices, 2) to contribute to physics studies of the L-H transition. (author) 11 refs., 2 figs

Experimental investigation of slow-positron emission from 4H-SiC and 6H-SiC surfaces

International Nuclear Information System (INIS)

Ling, C.C.; Beling, C.D.; Fung, S.; Weng, H.M.

2002-01-01

Slow-positron emission from the surfaces of as-grown n-type 4H-SiC and 6H-SiC (silicon carbide) with a conversion efficiency of ∼10 -4 has been observed. After 30 min of 1000 deg. C annealing in forming gas, the conversion efficiency of the n-type 6H-SiC sample was observed to be enhanced by 75% to 1.9x10 -4 , but it then dropped to ∼10 -5 upon a further 30 min annealing at 1400 deg. C. The positron work function of the n-type 6H-SiC was found to increase by 29% upon 1000 deg. C annealing. For both p-type 4H-SiC and p-type 6H-SiC materials, the conversion efficiency was of the order of ∼10 -5 , some ten times lower than that for the n-type materials. This was attributed to the band bending at the p-type material surface which caused positrons to drift away from the positron emitting surface. (author)

Two-dimensional simulations of multi-hollow VHF SiH4/H2 plasma

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Li-Wen Su

2018-02-01

Full Text Available A triode multi-hollow VHF SiH4/H2 plasma (60 MHz was examined at a pressure of 20 Pa by two-dimensional simulations using the fluid model. In this study, we considered the effect of the rate constant of reaction, SiH3 + SiH3→SiH2 + SiH4, on the plasma characteristics. A typical VHF plasma of a high-electron density with a low-electron temperature was obtained between two discharge electrodes. Spatial profiles of SiH3+, SiH2+, SiH3- and SiH3 densities were similar to that of the electron density while the electron temperature had a maximum value near the two discharge electrodes. It was found that the SiH3 radical density did not decrease rapidly near the substrate and the electron temperature was lower than 1 eV, suggesting that the triode multi-hollow plasma source can provide high quality amorphous silicon with a high deposition rate.

Characteristics of one-port surface acoustic wave resonator fabricated on ZnO/6H-SiC layered structure

Science.gov (United States)

Li, Qi; Qian, Lirong; Fu, Sulei; Song, Cheng; Zeng, Fei; Pan, Feng

2018-04-01

Characteristics of one-port surface acoustic wave (SAW) resonators fabricated on ZnO/6H-SiC layered structure were investigated experimentally and theoretically. Phase velocities (V p), electromechanical coupling coefficients (K 2), quality factors (Q), and temperature coefficients of frequency (TCF) of Rayleigh wave (0th mode) and first- and second-order Sezawa wave (1st and 2nd modes, respectively) for different piezoelectric film thickness-to-wavelength (h ZnO /λ) ratios were systematically studied. Results demonstrated that one-port SAW resonators fabricated on the ZnO/6H-SiC layered structure were promising for high-frequency SAW applications with moderate K 2 and TCF values. A high K 2 of 2.44% associated with a V p of 5182 m s‑1 and a TCF of  ‑41.8 ppm/°C was achieved at h ZnO /λ  =  0.41 in the 1st mode, while a large V p of 7210 m s‑1 with a K 2 of 0.19% and a TCF of  ‑36.4 ppm/°C was obtained for h ZnO /λ  =  0.31 in the 2nd mode. Besides, most of the parameters were reported for the first time and will be helpful for the future design and optimization of SAW devices fabricated on ZnO/6H-SiC layered structures.

FEM Analysis of Sezawa Mode SAW Sensor for VOC Based on CMOS Compatible AlN/SiO2/Si Multilayer Structure

Directory of Open Access Journals (Sweden)

Muhammad Zubair Aslam

2018-05-01

Full Text Available A Finite Element Method (FEM simulation study is conducted, aiming to scrutinize the sensitivity of Sezawa wave mode in a multilayer AlN/SiO2/Si Surface Acoustic Wave (SAW sensor to low concentrations of Volatile Organic Compounds (VOCs, that is, trichloromethane, trichloroethylene, carbon tetrachloride and tetrachloroethene. A Complimentary Metal-Oxide Semiconductor (CMOS compatible AlN/SiO2/Si based multilayer SAW resonator structure is taken into account for this purpose. In this study, first, the influence of AlN and SiO2 layers’ thicknesses over phase velocities and electromechanical coupling coefficients (k2 of two SAW modes (i.e., Rayleigh and Sezawa is analyzed and the optimal thicknesses of AlN and SiO2 layers are opted for best propagation characteristics. Next, the study is further extended to analyze the mass loading effect on resonance frequencies of SAW modes by coating a thin Polyisobutylene (PIB polymer film over the AlN surface. Finally, the sensitivity of the two SAW modes is examined for VOCs. This study concluded that the sensitivity of Sezawa wave mode for 1 ppm of selected volatile organic gases is twice that of the Rayleigh wave mode.

Infrared, diode laser spectroscopy of the Ar--N2O complex: Observation of the intermolecular bending mode in combination with the highest frequency intramolecular stretching mode

International Nuclear Information System (INIS)

Hu, T.A.; Chappell, E.L.; Sharpe, S.W.

1993-01-01

Rotationally resolved vibrational spectra consisting of a-type transitions have been observed for the low-frequency, intermolecular bending mode in combination with the highest frequency, intramolecular stretching mode of Ar--N 2 O. Analysis of the spectral data places the origin of the combination band at 2256.1 cm -1 while the origin of the intramolecular stretching fundamental is at 2223.9 cm -1 . The difference between these two origins is approximately 32.2 cm -1 and agrees well with our calculated frequency of 31.5 cm -1 for the intermolecular bending mode, which was obtained by analysis of the centrifugal distortion constants. In addition, argon--nitrous oxide exhibits an anomalously large inertial defect of 10.96 amu A 2 in the combination state. This indicates a breakdown in the assumption of separation between vibration and rotation. While much of the inertial defect in the ground state can be accounted for by including Coriolis interactions, that occurring in the combination state is only partially accounted for by a similar analysis. Small, but significant changes, are observed in both the radial and angular parameters for Ar--N 2 O when going from the ground to the combination state, indicating large amplitude motion. The combination band is approximately 200 times less intense than the high-frequency, stretching fundamental of Ar--N 2 O. In addition, over 400 new rovibrational transitions are assigned to the previously observed 1 0 1 intramolecular stretching fundamental of the complex, and the subsequent rotational analysis is found to be in close agreement with earlier studies. Data were taken on a newly built, rapid-scan, diode laser spectrometer that incorporates a 12 cmx200 μm pulsed slit-expansion nozzle

Infrared-transmission spectra and hydrogen content of hydrogenated amorphous silicon

Science.gov (United States)

Hu, Yuehi; Chen, Guanghua; Wu, Yueying; Yin, Shengyi; Gao, Zhuo; Wang, Qing; Song, Xuemei; Deng, Jinxiang

2004-05-01

In this paper, two kinds of methods of calculating the hydrogen content of a-Si:H thin film by means of the wagging mode and the stretching modes of infrared-transmission spectra, are investigated. The reason for the difference in these two calculation results is analyzed. If the contents of SiH2 and (SiH2) n are indicated in terms of a structure factor F=(/840+/880)//2000, it is shown that the calculation results obtained from the two different methods are almost equal when the refractive index n is approximately 3.4 or the fitting thickness is between 0.71 and 0.89 μm in the case of a small F. It is shown that the ways of fabrication of thin film can influences silicon-hydrogen bonding configuration of a-Si: H film, and different ways of fabrication can lead to different contents of SiH2 and (SiH2) n . The uniformity of the thin film with a big F is bad. In this case, there is great difference between the thickness measured by the SurfCom408A surface profile apparatus and the thickness obtained by fitting the fringes; and the hydrogen contents of a-Si:H films obtained by means of the wagging mode and the stretching modes are different, too. But the fabrication of the MWECR CVD assisted by CAT CVD can effectively restrain the formation of SiH2 and (SiH2) n .

On the structure and normal modes of hydrogenated Ti-fullerene compounds

Energy Technology Data Exchange (ETDEWEB)

Tlahuice-Flores, Alfredo, E-mail: tlahuicef@yahoo.com [Universidad Nacional Autonoma de Mexico, Instituto de Fisica (Mexico); Mejia-Rosales, Sergio, E-mail: sergio.mejiars@uanl.edu.mx [Universidad Autonoma de Nuevo Leon, CICFIM-Facultad de Ciencias Fisico Matematicas, and Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia (Mexico); Galvan, Donald H., E-mail: donald@cnyn.unam.mx [Centro de Nanociencias y Nanotecnologia-Universidad Nacional Autonoma de Mexico (Mexico)

2012-08-15

When titanium covers a C{sub 60} core, the metal atoms may suppress the fullerene's capacity of storing hydrogen, depending on the number of Ti atoms covering the C{sub 60} framework, the Ti-C binding energy, and diffusion barriers. In this article, we study the structural and vibrational properties of the C{sub 60}TiH{sub n} (n = 2, 4, 6, and 8) and C{sub 60}Ti{sub 6}H{sub 48} compounds. The IR spectra of C{sub 60}TiH{sub n} compounds have a maximum attributable to the Ti-H stretching mode, which shifts to lower values in the structures with n = 4, 8, while their Raman spectra show two peaks corresponding to the stretching modes of H{sub 2} molecules at apical and azimuthal positions. On the other hand, the IR spectrum of C{sub 60}Ti{sub 6}H{sub 48} shows an intense peak due to the Ti-H in-phase stretching mode, while its Raman spectrum has a maximum attributed to the pentagonal pinch of the C{sub 60} core. Finally, we have found that the presence of one apical H{sub 2} molecule enhances the pentagonal pinch mode, becoming the maximum in the Raman spectrum.Graphical Abstract.

Compression of Fe-Si-H alloys

Science.gov (United States)

Tagawa, S.; Ohta, K.; Hirose, K.

2014-12-01

The light elements in the Earth's core have not been fully identified yet, but hydrogen is now collecting more attention in part because recent planet formation theory suggests that large amount of water should have been brought to the Earth during its formation (giant-impact stage). Nevertheless, the effect of hydrogen on the property of iron alloys is little known so far. The earlier experimental study by Hirao et al. [2004 GRL] examined the compression behavior of dhcp FeHx (x ≈ 1) and found that it becomes much stiffer than pure iron above 50 GPa, where magnetization disappears. Here we examined the solubility of hydrogen into iron-rich Fe-Si alloys and the compression behavior of dhcp Fe-Si-H alloy at room temperature. Fe+6.5wt.%Si or Fe+9wt.%Si foil was loaded into a diamond-anvil cell (DAC), and then liquid hydrogen was introduced at temperatures below 20 K. X-ray diffraction measurements at SPring-8 revealed the formation of a dhcp phase with or without thermal annealing by laser above 8.4 GPa. The concentration of hydrogen in such dhcp lattice was calculated following the formula reported by Fukai [1992]; y = 0.5 and 0.2 for Fe-6.5wt.%Si-H or Fe-9wt.%Si-H alloys, respectively when y is defined as Fe(1-x)SixHy. Unlike Fe-H alloy, hydrogen didn't fully occupy the octahedral sites even under hydrogen-saturated conditions in the case of Fe-Si-H system. Anomaly was observed in obtained pressure-volume curve around 44 Å3 of unit-cell volume for both Fe-6.5wt.%Si-H and Fe-9wt.%Si-H alloys, which may be related to the spin transition in the dhcp phase. They became slightly stiffer at higher pressures, but their compressibility was still similar to that of pure iron.

Interface plasmon-phonons modes in ion-beam synthesized Mg2Si nanolayers

International Nuclear Information System (INIS)

Baleva, M.; Zlateva, G.

2009-01-01

Raman scattering of samples, representing n- and p-type Si matrix with unburied Mg 2 Si nanolayers, formed by ion-beam synthesis, are studied. Despite the features in the Raman spectra attributed to the polariton modes with frequencies between those of the TO and LO phonons, additional features outside this interval are detected. The frequencies of these features are very sensitive to the plasma frequency, being different in the n- and p-type Si matrix and to the annealing time. The latter implies the generation of interface plasmonphonons modes. The frequencies of the interface plasmon-phonon modes are calculated and compared with the experimental results. The order of the carrier concentration in Mg 2 Si, the data of which are not available in the literature, is evaluated. (authors)

Local atomic structure and chemical order in amorphous SiGe:H and SiC:H alloys

International Nuclear Information System (INIS)

Pisarkiewicz, T.; Stapinski, T.

1994-01-01

The local structure and chemical ordering in amorphous hydrogenated silicon-germanium and silicon-carbon alloys were analyzed mainly with the help of extended x-ray absorption fine structure (EXAFS) spectroscopy, Raman scattering and electron diffraction. Ge-Ge and Ge-Si distances were found to be independent of concentration and the composition of the first coordination shell around Ge is consistent with a random mixing of the two species in a-Si 1-x Ge:H alloy. The first-coordination-shell average bond lengths for Si-Si and SiC in a-Si 1-x C x :H are also constant with concentration x and the comparison of the first coordination shell composition around Si with average concentration indicates that the alloys tends to be chemically ordered. The degree of crystallinity in microcrystalline Si films determined by EXAFS is in agreement with that obtained in Raman scattering analysis. (author). 16 refs, 5 figs

Fast Homoepitaxial Growth of 4H-SiC Films on 4° off-Axis Substrates in a SiH4-C2H4-H2 System

International Nuclear Information System (INIS)

Liu Bin; Sun Guo-Sheng; Liu Xing-Fang; Zhang Feng; Dong Lin; Zheng Liu; Yan Guo-Guo; Liu Sheng-Bei; Zhao Wan-Shun; Wang Lei; Zeng Yi-Ping; Wang Zhan-Guo; Li Xi-Guang; Yang Fei

2013-01-01

Homoepitaxial growth of 4H-SiC epilayers is conducted in a SiH 4 -C 2 H 4 -H 2 system by low pressure hot-wall vertical chemical vapor deposition (CVD). Thick epilayers of 45 μm are achieved at a high growth rate up to 26 μm/h under an optimized growth condition, and are characterized by using a Normaski optical microscope, a scanning electronic microscope (SEM), an atomic force microscope (AFM) and an x-ray diffractometer (XRD), indicating good crystalline quality with mirror-like smooth surfaces and an rms roughness of 0.9 nm in a 5 μm × 5μm area. The dependence of the 4H-SiC growth rate on growth conditions on 4° off-axis 4H-SiC substrates and its mechanism are investigated. It is found that the H 2 flow rate could influence the surface roughness, while good surface morphologies without Si droplets and epitaxial defects such as triangular defects could be obtained by increasing temperature

Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001).

Science.gov (United States)

Li, Lianbi; Zang, Yuan; Hu, Jichao; Lin, Shenghuang; Chen, Zhiming

2017-05-25

The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL) on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001) Si-face by chemical vapor deposition. TEM characterizations of the p/n-Si DSL confirmed the epitaxial growth of the Si films with preferred orientation and the misfit dislocations with a Burgers vector of 1/3 at the p-Si/n-Si interface. The device had an obvious rectifying behavior, and the turn-on voltage was about 1.2 V. Under the visible illumination of 0.6 W/cm², the device demonstrated a significant photoelectric response with a photocurrent density of 2.1 mA/cm². Visible light operation of the Si-DSL/6H-SiC heterostructure was realized for the first time.

Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001

Directory of Open Access Journals (Sweden)

Lianbi Li

2017-05-01

Full Text Available The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001 Si-face by chemical vapor deposition. TEM characterizations of the p/n-Si DSL confirmed the epitaxial growth of the Si films with preferred orientation and the misfit dislocations with a Burgers vector of 1/3 <21-1> at the p-Si/n-Si interface. The device had an obvious rectifying behavior, and the turn-on voltage was about 1.2 V. Under the visible illumination of 0.6 W/cm2, the device demonstrated a significant photoelectric response with a photocurrent density of 2.1 mA/cm2. Visible light operation of the Si-DSL/6H-SiC heterostructure was realized for the first time.

Luminescence of solar cells with a-Si:H/c-Si heterojunctions

Science.gov (United States)

Zhigunov, D. M.; Il'in, A. S.; Forsh, P. A.; Bobyl', A. V.; Verbitskii, V. N.; Terukov, E. I.; Kashkarov, P. K.

2017-05-01

We have studied the electroluminescence (EL) and photoluminescence (PL) of solar cells containing a-Si:H/c-Si heterojunctions. It is established that both the EL and PL properties of these cells are determined by the radiative recombination of nonequilibrium carriers in crystalline silicon (c-Si). The external EL energy yield (efficiency) of solar cells with a-Si:H/c-Si heterojunctions at room temperature amounts to 2.1% and exceeds the value reached in silicon diode structures. This large EL efficiency can be explained by good passivation of the surface of crystalline silicon and the corresponding increase in lifetime of minority carrier s in these solar cells.

Phosphinodi(benzylsilane) PhP{(o-C6H4CH2)SiMe2H}2: a versatile "PSi2Hx" pincer-type ligand at ruthenium.

Science.gov (United States)

Montiel-Palma, Virginia; Muñoz-Hernández, Miguel A; Cuevas-Chávez, Cynthia A; Vendier, Laure; Grellier, Mary; Sabo-Etienne, Sylviane

2013-09-03

The synthesis of the new phosphinodi(benzylsilane) compound PhP{(o-C6H4CH2)SiMe2H}2 (1) is achieved in a one-pot reaction from the corresponding phenylbis(o-tolylphosphine). Compound 1 acts as a pincer-type ligand capable of adopting different coordination modes at Ru through different extents of Si-H bond activation as demonstrated by a combination of X-ray diffraction analysis, density functional theory calculations, and multinuclear NMR spectroscopy. Reaction of 1 with RuH2(H2)2(PCy3)2 (2) yields quantitatively [RuH2{[η(2)-(HSiMe2)-CH2-o-C6H4]2PPh}(PCy3)] (3), a complex stabilized by two rare high order ε-agostic Si-H bonds and involved in terminal hydride/η(2)-Si-H exchange processes. A small free energy of reaction (ΔrG298 = +16.9 kJ mol(-1)) was computed for dihydrogen loss from 3 with concomitant formation of the 16-electron species [RuH{[η(2)-(HSiMe2)-CH2-o-C6H4]PPh[CH2-o-C6H4SiMe2]}(PCy3)] (4). Complex 4 features an unprecedented (29)Si NMR decoalescence process. The dehydrogenation process is fully reversible under standard conditions (1 bar, 298 K).

Metastability of a-SiO{sub x}:H thin films for c-Si surface passivation

Energy Technology Data Exchange (ETDEWEB)

Serenelli, L., E-mail: luca.serenelli@enea.it [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy); DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Martini, L. [DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Imbimbo, L. [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy); DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Asquini, R. [DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Menchini, F.; Izzi, M.; Tucci, M. [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy)

2017-01-15

Highlights: • a-SiO{sub x}:H film deposition by RF-PECVD is optimized from SiH{sub 4}, CO{sub 2} and H{sub 2} gas mixture. • Metastability of a-SiO{sub x}:H/c-Si passivation is investigated under thermal annealing and UV exposure. • A correlation between passivation metastability and Si−H bonds is found by FTIR spectra. • A metastability model is proposed. - Abstract: The adoption of a-SiO{sub x}:H films obtained by PECVD in heterojunction solar cells is a key to further increase their efficiency, because of its transparency in the UV with respect to the commonly used a-Si:H. At the same time this layer must guarantee high surface passivation of the c-Si to be suitable in high efficiency solar cell manufacturing. On the other hand the application of amorphous materials like a-Si:H and SiN{sub x} on the cell frontside expose them to the mostly energetic part of the sun spectrum, leading to a metastability of their passivation properties. Moreover as for amorphous silicon, thermal annealing procedures are considered as valuable steps to enhance and stabilize thin film properties, when performed at opportune temperature. In this work we explored the reliability of a-SiO{sub x}:H thin film layers surface passivation on c-Si substrates under UV exposition, in combination with thermal annealing steps. Both p- and n-type doped c-Si substrates were considered. To understand the effect of UV light soaking we monitored the minority carriers lifetime and Si−H and Si−O bonding, by FTIR spectra, after different exposure times to light coming from a deuterium lamp, filtered to UV-A region, and focused on the sample to obtain a power density of 50 μW/cm{sup 2}. We found a certain lifetime decrease after UV light soaking in both p- and n-type c-Si passivated wafers according to a a-SiO{sub x}:H/c-Si/a-SiO{sub x}:H structure. The role of a thermal annealing, which usually enhances the as-deposited SiO{sub x} passivation properties, was furthermore considered. In

Surface passivation at low temperature of p- and n-type silicon wafers using a double layer a-Si:H/SiNx:H

International Nuclear Information System (INIS)

Focsa, A.; Slaoui, A.; Charifi, H.; Stoquert, J.P.; Roques, S.

2009-01-01

Surface passivation of bare silicon or emitter region is of great importance towards high efficiency solar cells. Nowadays, this is usually accomplished by depositing an hydrogenated amorphous silicon nitride (a-SiNx:H) layer on n + p structures that serves also as an excellent antireflection layer. On the other hand, surface passivation of p-type silicon is better assured by an hydrogenated amorphous silicon (a-Si:H) layer but suffers from optical properties. In this paper, we reported the surface passivation of p-type and n-type silicon wafers by using an a-Si:H/SiNx:H double layer formed at low temperature (50-400 deg. C) with ECR-PECVD technique. We first investigated the optical properties (refraction index, reflectance, and absorbance) and structural properties by FTIR (bonds Si-H, N-H) of the deposited films. The hydrogen content in the layers was determined by elastic recoil detection analysis (ERDA). The passivation effect was monitored by measuring the minority carrier effective lifetime vs. different parameters such as deposition temperature and amorphous silicon layer thickness. We have found that a 10-15 nm a-Si film with an 86 nm thick SiN layer provides an optimum of the minority carriers' lifetime. It increases from an initial value of about 50-70 μs for a-Si:H to about 760 and 800 μs for a-Si:H/SiNx:H on Cz-pSi and FZ-nSi, respectively, at an injection level 2 x 10 15 cm -3 . The effective surface recombination velocity, S eff , for passivated double layer on n-type FZ Si reached 11 cm/s and for FZ-pSi-14 cm/s, and for Cz-pSi-16-20 cm/s. Effect of hydrogen in the passivation process is discussed.

Acute effects of static stretching on peak and end-range hamstring-to-quadriceps functional ratios

Science.gov (United States)

Sekir, Ufuk; Arabaci, Ramiz; Akova, Bedrettin

2015-01-01

AIM: To evaluate if static stretching influences peak and end-range functional hamstring-to-quadriceps (H/Q) strength ratios in elite women athletes. METHODS: Eleven healthy female athletes in an elite competitive level participated to the study. All the participants fulfilled the static stretching or non-stretching (control) intervention protocol in a randomized design on different days. Two static unassisted stretching exercises, one in standing and one in sitting position, were used to stretch both the hamstring and quadriceps muscles during these protocols. The total time for the static stretching was 6 ± 1 min. The isokinetic peak torque measurements for the hamstring and quadriceps muscles in eccentric and concentric modes and the calculations for the functional H/Q strength ratios at angular velocities of 60°/s and 180°/s were made before (pre) and after (post) the control or stretching intervention. The strength measurements and functional strength ratio calculations were based during the entire- and end-range of knee extension. RESULTS: The pre-test scores for quadriceps and hamstring peak torque and end range values were not significantly different between the groups (P > 0.05). Subsequently, although the control group did not exhibit significant changes in quadriceps and hamstring muscle strength (P > 0.05), static stretching decreased eccentric and concentric quadriceps muscle strength at both the 60°/s and 180°/s test speeds (P hamstring muscle strength at both the 60°/s and 180°/s test speeds (P 0.05). Furthermore, the functional H/Q strength ratios exhibited no significant alterations during the entire and end ranges of knee extension both in the static stretching or the control intervention (P > 0.05). CONCLUSION: According to our results, static stretching routine does not influence functional H/Q ratio. Athletes can confidently perform static stretching during their warm-up routines. PMID:26495249

The H-mode of ASDEX

International Nuclear Information System (INIS)

1989-01-01

The paper is a review of investigations of the H-mode on ASDEX performed since its discovery in 1982. The topics discussed are: (1) the development of the plasma profiles, with steep gradients in the edge region and flat profiles in the bulk plasma, (2) the MHD properties resulting from the profile changes, including an extensive stability analysis, (3) the impurity development, with special emphasis on the MHD aspects and on neoclassical impurity transport effects in quiescent H-phases, and (4) the properties of the edge plasma, including the evidence of three-dimensional distortions at the edge. The part on confinement includes scaling studies and the results of transport analysis. The power threshold of the H-mode is found to depend weakly on the density, but there is probably no dependence on the toroidal field or the current. For the operational range of the H-mode, new results for the limiter H-mode on ASDEX and the development of the H-mode under beam current drive conditions are included. A number of experiments are described which demonstrate the crucial role of the edge electron temperature in the L-H transition. New results of magnetic and density fluctuation studies at the plasma edge within the edge transport barrier are presented. Finally, the findings on ASDEX are compared with results obtained on other machines and are used to test various H-mode theories. (author). 131 refs, 103 figs, 1 tab

H{sub 2}-Ar dilution for improved c-Si quantum dots in P-doped SiN{sub x}:H thin film matrix

Energy Technology Data Exchange (ETDEWEB)

Liu, Jia [Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119 (China); Zhang, Weijia, E-mail: zwjghx@126.com [Center of Condensed Matter and Material Physics, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing, 100191 (China); Liu, Shengzhong, E-mail: szliu@dicp.ac.cn [Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119 (China); State key Laboratory of Catalysis, iChEM, Dalian Institute of Chemical Physics, Dalian National Laboratory for Clean Energy, Chinese Academy of Sciences, Dalian 116023 (China)

2017-02-28

Highlights: • Phosphorous-doped SiN{sub x}:H thin films containing c-Si QDs were prepared by PECVD in H{sub 2}-Ar mixed dilution under low temperature. • QD density and QD size can be controlled by tuning H{sub 2}/Ar flow ratio. • The sample prepared at the H{sub 2}/Ar flow ratio of 100/100 possesses both wide band gap and excellent conductivity. • Detail discussion has been presented for illustrating the influence of H{sub 2}/Ar mixed dilution on the crystallization process and P-doping. - Abstract: Phosphorus-doped hydrogenated silicon nitride (SiN{sub x}:H) thin films containing crystalline silicon quantum dot (c-Si QD) was prepared by plasma enhanced chemical vapor deposition (PECVD) using hydrogen-argon mixed dilution. The effects of H{sub 2}/Ar flow ratio on the structural, electrical and optical characteristics of as-grown P-doped SiN{sub x}:H thin films were systematically investigated. Experimental results show that crystallization is promoted by increasing the H{sub 2}/Ar flow ratio in dilution, while the N/Si atomic ratio is higher for thin film deposited with argon-rich dilution. As the H{sub 2}/Ar flow ratio varies from 100/100 to 200/0, the samples exhibit excellent conductivity owing to the large volume fraction of c-Si QDs and effective P-doping. By adjusting the H{sub 2}/Ar ratio to 100/100, P-doped SiN{sub x}:H thin film containing tiny and densely distributed c-Si QDs can be obtained. It simultaneously possesses wide optical band gap and high dark conductivity. Finally, detailed discussion has been made to analyze the influence of H{sub 2}-Ar mixed dilution on the properties of P-doped SiN{sub x}:H thin films.

a-Si:H crystallization from isothermal annealing and its dependence on the substrate used

Energy Technology Data Exchange (ETDEWEB)

Rojas-Lopez, M., E-mail: marlonrl@yahoo.com.mx [CIBA-Tlaxcala, Instituto Politecnico Nacional, Tepetitla, Tlax. 90700 (Mexico); Orduna-Diaz, A.; Delgado-Macuil, R.; Gayou, V.L.; Bibbins-Martinez, M. [CIBA-Tlaxcala, Instituto Politecnico Nacional, Tepetitla, Tlax. 90700 (Mexico); Torres-Jacome, A.; Trevino-Palacios, C.G. [INAOE, Tonantzintla, Puebla, Pue. 72000 (Mexico)

2010-10-25

We present hydrogenated amorphous silicon (a-Si:H) films which were deposited on two different substrates (glass and mono-crystalline silicon) after an isothermal annealing treatment at 250 deg. C for up to 14 h. The annealed amorphous films were analyzed using atomic force microscopy, Raman and FTIR spectroscopy. Films deposited on glass substrate experienced an amorphous-crystalline phase transition after annealing because of the metal-induced crystallization effect, reaching approximately 70% conversion after 14 h of annealing. An absorption frequency of the TO-phonon mode that varies systematically with the substoichiometry of the silicon oxide in the 1046-1170 cm{sup -1} region was observed, revealing the reactivity of the film with the annealing time. For similar annealing time, films deposited on mono-crystalline silicon substrate remained mainly amorphous with minimal Si-crystalline formation. Therefore, the crystalline formations and the shape of the films surfaces depends on the annealing time as well as on the substrate employed during the deposition process of the a-Si:H film.

Mode Specific Electronic Friction in Dissociative Chemisorption on Metal Surfaces: H2 on Ag(111)

Science.gov (United States)

Maurer, Reinhard J.; Jiang, Bin; Guo, Hua; Tully, John C.

2017-06-01

Electronic friction and the ensuing nonadiabatic energy loss play an important role in chemical reaction dynamics at metal surfaces. Using molecular dynamics with electronic friction evaluated on the fly from density functional theory, we find strong mode dependence and a dominance of nonadiabatic energy loss along the bond stretch coordinate for scattering and dissociative chemisorption of H2 on the Ag(111) surface. Exemplary trajectories with varying initial conditions indicate that this mode specificity translates into modulated energy loss during a dissociative chemisorption event. Despite minor nonadiabatic energy loss of about 5%, the directionality of friction forces induces dynamical steering that affects individual reaction outcomes, specifically for low-incidence energies and vibrationally excited molecules. Mode-specific friction induces enhanced loss of rovibrational rather than translational energy and will be most visible in its effect on final energy distributions in molecular scattering experiments.

Limiter H-mode experiments on TFTR

Energy Technology Data Exchange (ETDEWEB)

Bush, C [Oak Ridge National Lab., TN (USA); Bretz, N L; Fredrickson, E D; McGuire, K M; Nazikian, R; Park, H K; Schivell, J; Taylor, G; Bitter, B; Budny, R; Cohen, S A; Kilpatrick, S J; LeBlanc, B; Manos, D M; Meade, D; Paul, S F; Scott, S D; Stratton, B C; Synakowski, E J; Towner, H H; Weiland, R M; Arunasalam, V; Bateman, G; Bell, M G; Bell, R; Boivin, R; Cavallo, A; Cheng, C Z; Chu, T K; Cowl,

1990-12-15

Limiter H-modes with centrally peaked density profiles have been obtained in TFTR using a highly conditioned graphite limiter. The transition to these centrally peaked H-modes takes place from the supershot to the H-mode rather than the usual L- to H-mode transition observed on other tokamaks. Bi-directional beam heating is required to induce the transition. Density peaking factors, n{sub e}(0)/{l angle}n{sub e}{r angle}, >2.3 are obtained and at the same time the H-mode characteristics are similar to those of limiter H-modes on other tokamaks and the global confinement, {tau}{sub E}, can be >2.5 times L-mode scaling. The TRANSP analysis shows that transport in these H-modes is similar to that of supershots within the inner 60 cm of the plasma, but the stored electron energy (calculated using measured values of T{sub e} and n{sub e}) is higher for the H-mode at the plasma edge. Microwave scattering near the edge shows broad spectra at k = 5.5 cm{sup {minus}1} which begin at the drop in D{sub {alpha}} radiation and are strongly shifted in the electron diamagnetic drift direction. At the same time beam emission spectroscopy shows a coherent mode near the boundary with m = 15--20 at 20--30 kHz which is propagating in the ion direction. During an ELM event these apparent rotations cease and Mirnov fluctuations in the 50--500 kHz increase in intensity.

H-mode study in CHS

International Nuclear Information System (INIS)

Toi, K.; Morisaki, T.; Sakakibara, S.

1995-02-01

In CHS rapid H-mode transition is observed in NBI heated deuterium and hydrogen plasmas without obvious isotope effect, when a net plasma current is ramped up to increase the external rotational transform. The H-mode of CHS has many similarities with those in tokamaks. Recent measurement with fast response Langmuir probes has revealed that the rapid change in floating potential occurs at the transition, but the change follows the formation of edge transport barrier. The presence of ι/2π = 1 surface near the edge and sawtooth crash triggered by internal modes may play an important role for determining the H-mode transition in CHS. (author)

Communication: Reactivity borrowing in the mode selective chemistry of H + CHD3 → H2 + CD3

Science.gov (United States)

Ellerbrock, Roman; Manthe, Uwe

2017-12-01

Quantum state-resolved reaction probabilities for the H + CHD3 → H2 + CD3 reaction are calculated by accurate full-dimensional quantum dynamics calculations using the multi-layer multi-configurational time-dependent Hartree approach and the quantum transition state concept. Reaction probabilities of various ro-vibrational states of the CHD3 reactant are investigated for vanishing total angular momentum. While the reactivity of the different vibrational states of CHD3 mostly follows intuitive patterns, an unusually large reaction probability is found for CHD3 molecules triply excited in the CD3 umbrella-bending vibration. This surprising reactivity can be explained by a Fermi resonance-type mixing of the single CH-stretch excited and the triple CD3 umbrella-bend excited vibrational states of CHD3. These findings show that resonant energy transfer can significantly affect the mode-selective chemistry of CHD3 and result in counter-intuitive reactivity patterns.

Hydrogen kinetics in a-Si:H and a-SiC:H thin films investigated by real-time ERD

Energy Technology Data Exchange (ETDEWEB)

Halindintwali, S., E-mail: shalindintwali@uwc.ac.za [Physics Department, University of the Western Cape, Private Bag X17, Bellville 7535 (South Africa); Khoele, J. [Physics Department, University of the Western Cape, Private Bag X17, Bellville 7535 (South Africa); Nemroaui, O. [Department of Mechatronics, Cape Peninsula University of Technology, P.O. Box 1906, Bellville 7535 (South Africa); Comrie, C.M. [Department of Physics, University of Cape Town, Rondebosch 7700 (South Africa); Materials Research Department, iThemba LABS, P.O. Box 722, Somerset West 7129 (South Africa); Theron, C.C. [Physics Department, University of Pretoria, Private Bag X20, Hatfield 0028 (South Africa)

2015-04-15

Hydrogen effusion from hydrogenated amorphous silicon (a-Si:H) and amorphous silicon carbide (a-Si{sub 1−x}C{sub x}:H) thin films during a temperature ramp between RT and 600 °C was studied by in situ real-time elastic recoil detection analysis. Point to point contour maps show the hydrogen depth profile and its evolution with the ramped temperature. This paper proposes a diffusion limited evolution model to study H kinetic properties from total retained H contents recorded in a single ramp. In a compact a-Si:H layer where H predominantly effuses at high temperatures between 500 and 600 °C, an activation energy value of ∼1.50 eV and a diffusion pre-factor of 0.41 × 10{sup −4} cm{sup 2}/s were obtained. Applied to an non-stoichiometric a-Si{sub 1−x}C{sub x}:H film in the same range of temperature, the model led to reduced values of activation energy and diffusion prefactor of ∼0.33 eV and 0.59 × 10{sup −11} cm{sup 2}/s, respectively.

A computational study on the adsorption configurations and reactions of SiH{sub x}(x = 1-4) on clean and H-covered Si(100) surfaces

Energy Technology Data Exchange (ETDEWEB)

Le, Thong N-M [Molecular Science and Nano-Materials Laboratory, Institute for Computational Science and Technology, Quang Trung Software Park, Dist. 12, Ho Chi Minh City (Viet Nam); Raghunath, P. [Center for Interdisciplinary Molecular Science, Department of Applied Chemistry, National Chiao Tung University, Hsinchu 300, Taiwan (China); Huynh, Lam K., E-mail: lamhuynh.us@gmail.com [Department of Applied Chemistry, School of Biotechnology,International University, VNU-HCMC, Quarter 6, Linh Trung, Thu Duc District, Ho Chi Minh City (Viet Nam); Lin, M.C., E-mail: chemmcl@emory.edu [Center for Interdisciplinary Molecular Science, Department of Applied Chemistry, National Chiao Tung University, Hsinchu 300, Taiwan (China)

2016-11-30

Highlights: • Possible adsorption configurations of all adsorbates on Si(100) surface are systematically explored. • The mechanisms leading to the formation of silicon adatoms on the surface are proposed. • The barriers for hydrogen abstractions from the surface are negligible comparing to the barriers for the hydrogen migrations. • The barriers for hydrogen abstractions from the adsorbed speices are negligible comparing to the barriers for the decompositions. - Abstract: Possible adsorption configurations of H and SiH{sub x} (x = 1 − 4) on clean and H-covered Si(100) surfaces are determined by using spin-polarized DFT calculations. The results show that, on the clean surface, the gas-phase hydrogen atom and SiH{sub 3} radicals effectively adsorb on the top sites, while SiH and SiH{sub 2} prefer the bridge sites of the first layer. Another possibility for SiH is to reside on the hollow sites with a triple-bond configuration. For a partially H-coverd Si(100) surface, the mechanism is similar but with higher adsorption energies in most cases. This suggests that the surface species become more stable in the presence of surface hydrogens. The minimum energy paths for the adsorption/migration and reactions of H/SiH{sub x} species on the surfaces are explored using the climbing image-nudged elastic band method. The competitive surface processes for Si thin-film formation from SiH{sub x} precursors are also predicted. The study reveals that the migration of hydrogen adatom is unimportant with respect to leaving open surface sites because of its high barriers (>29.0 kcal/mol). Alternatively, the abstraction of hydrogen adatoms by H/SiH{sub x} radicals is more favorable. Moreover, the removal of hydrogen atoms from adsorbed SiH{sub x}, an essential step for forming Si layers, is dominated by abstraction rather than the decomposition processes.

Rapid solidification growth mode transitions in Al-Si alloys by dynamic transmission electron microscopy

International Nuclear Information System (INIS)

Roehling, John D.; Coughlin, Daniel R.; Gibbs, John W.; Baldwin, J. Kevin; Mertens, James C.E.; Campbell, Geoffrey H.; Clarke, Amy J.; McKeown, Joseph T.

2017-01-01

In situ dynamic transmission electron microscope (DTEM) imaging of Al-Si thin-film alloys was performed to investigate rapid solidification behavior. Solidification of alloys with compositions from 1 to 15 atomic percent Si was imaged during pulsed laser melting and subsequent solidification. Solely α-Al solidification was observed in Al-1Si and Al-3Si alloys, and solely kinetically modified eutectic growth was observed in Al-6Si and Al-9Si alloys. A transition in the solidification mode in eutectic and hypereutectic alloys (Al-12Si and Al-15Si) from nucleated α-Al dendrites at lower solidification velocities to planar eutectic growth at higher solidification velocities was observed, departing from trends previously seen in laser-track melting experiments. Comparisons of the growth modes and corresponding velocities are compared with previous solidification models, and implications regarding the models are discussed.

High resolution spectroscopy of 1,2-difluoroethane in a molecular beam: A case study of vibrational mode-coupling

Science.gov (United States)

Mork, Steven W.; Miller, C. Cameron; Philips, Laura A.

1992-09-01

The high resolution infrared spectrum of 1,2-difluoroethane (DFE) in a molecular beam has been obtained over the 2978-2996 cm-1 spectral region. This region corresponds to the symmetric combination of asymmetric C-H stretches in DFE. Observed rotational fine structure indicates that this C-H stretch is undergoing vibrational mode coupling to a single dark mode. The dark mode is split by approximately 19 cm-1 due to tunneling between the two identical gauche conformers. The mechanism of the coupling is largely anharmonic with a minor component of B/C plane Coriolis coupling. Effects of centrifugal distortion along the molecular A-axis are also observed. Analysis of the fine structure identifies the dark state as being composed of C-C torsion, CCF bend, and CH2 rock. Coupling between the C-H stretches and the C-C torsion is of particular interest because DFE has been observed to undergo vibrationally induced isomerization from the gauche to trans conformer upon excitation of the C-H stretch.

Local-mode vibrations of water

International Nuclear Information System (INIS)

Lawton, R.T.; Child, M.S.

1981-01-01

Quantum-mechanical eigenvalues for the stretching vibrations of H 2 O on the Sorbie-Murrell potential surface are shown to contain a series of local-mode doublets, with splittings which vary as the energy increases from 100 cm - 1 at v=1 to 0.001 cm - 1 at v=8. Preliminary calculations indicate that this pattern is largely unaffected by inclusion of the bending vibrational mode. (author)

The H-mode Pedestal and Edge Localized Modes in NSTX

International Nuclear Information System (INIS)

Maingi, R.; Fredrickson, E.D.; Menard, J.E.; Nishino, N.; Roquemore, A.L.; Sabbagh, S.A.; Tritz, K.

2004-01-01

The research program of the National Spherical Torus Experiment (NSTX) routinely utilizes the H-mode confinement regime to test and extend beta and pulse length limits. As in conventional aspect ratio tokamaks, NSTX observes a variety of edge localized modes (ELMs) in H-mode. Hence a significant part of the research program is dedicated to ELMs studies

Dissociation pathways of a single dimethyl disulfide on Cu(111): Reaction induced by simultaneous excitation of two vibrational modes

Energy Technology Data Exchange (ETDEWEB)

Motobayashi, Kenta, E-mail: kmotobayashi@cat.hokudai.ac.jp [Catalysis Research Center, Hokkaido University, Sapporo 001-0021 (Japan); Department of Advanced Materials Science, The University of Tokyo, Kashiwa 277-8561 (Japan); Surface and Interface Science Laboratory, RIKEN, Wako 351-0198 (Japan); Kim, Yousoo [Surface and Interface Science Laboratory, RIKEN, Wako 351-0198 (Japan); Arafune, Ryuichi [International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044 (Japan); Ohara, Michiaki; Ueba, Hiromu; Kawai, Maki, E-mail: maki@k.u-tokyo.ac.jp [Department of Advanced Materials Science, The University of Tokyo, Kashiwa 277-8561 (Japan)

2014-05-21

We present a novel reaction mechanism for a single adsorbed molecule that proceeds via simultaneous excitation of two different vibrational modes excited by inelastic tunneling electrons from a scanning tunneling microscope. Specifically, we analyze the dissociation of a single dimethyl disulfide (DMDS, (CH{sub 3}S){sub 2}) molecule on Cu(111) by using a versatile theoretical method, which permits us to simulate reaction rates as a function of sample bias voltage. The reaction is induced by the excitation of C-H stretch and S-S stretch modes by a two-electron process at low positive bias voltages. However, at increased voltages, the dissociation becomes a single-electron process that excites a combination mode of these stretches, where excitation of the C-H stretch is the energy source and excitation of the S-S stretch mode enhances the anharmonic coupling rate. A much smaller dissociation yield (few orders of magnitude) at negative bias voltages is understood in terms of the projected density of states of a single DMDS on Cu(111), which reflects resonant excitation through the molecular orbitals.

Physics of the H-mode

International Nuclear Information System (INIS)

Hinton, F.L.; Chu, M.S.; Dominguez, R.R.

1985-01-01

A theoretical picture of the H-mode is proposed which explains some of the most important features of this good confinement mode in neutral beam heated plasmas with divertors. From consideration of the transport through the separatrix and along the open field lines outside the separatrix, as well as the stability of the plasma inside the separatrix, we show that a bifurcation in the operating parameters is possible. At high edge temperatures, very large particle confinement times are possible because of the Ware pinch. The transport of particles and heat along the open field lines to the divertor region depends on temperature in a non-monotonic way, and the bifurcation of the thermal equilibrium which is implied may correspond to the L- to H-mode transition. The improvement of the interior confinement in the H-mode, when the edge temperature is higher, is shown to follow from the tearing mode stability properties of current profiles with pedestals. (author)

Nanocatalytic growth of Si nanowires from Ni silicate coated SiC nanoparticles on Si solar cell.

Science.gov (United States)

Parida, Bhaskar; Choi, Jaeho; Ji, Hyung Yong; Park, Seungil; Lim, Gyoungho; Kim, Keunjoo

2013-09-01

We investigated the nanocatalytic growth of Si nanowires on the microtextured surface of crystalline Si solar cell. 3C-SiC nanoparticles have been used as the base for formation of Ni silicate layer in a catalytic reaction with the Si melt under H2 atmosphere at an annealing temperature of 1100 degrees C. The 10-nm thick Ni film was deposited after the SiC nanoparticles were coated on the microtextured surface of the Si solar cell by electron-beam evaporation. SiC nanoparticles form a eutectic alloy surface of Ni silicate and provide the base for Si supersaturation as well as the Ni-Si alloy layer on Si substrate surface. This bottom reaction mode for the solid-liquid-solid growth mechanism using a SiC nanoparticle base provides more stable growth of nanowires than the top reaction mode growth mechanism in the absence of SiC nanoparticles. Thermally excited Ni nanoparticle forms the eutectic alloy and provides collectively excited electrons at the alloy surface, which reduces the activation energy of the nanocatalytic reaction for formation of nanowires.

Electrical properties of SiO{sub 2}/SiC interfaces on 2°-off axis 4H-SiC epilayers

Energy Technology Data Exchange (ETDEWEB)

Vivona, M., E-mail: marilena.vivona@imm.cnr.it [CNR-IMM, Strada VIII, n. 5 – Zona Industriale, I-95121 Catania (Italy); Fiorenza, P. [CNR-IMM, Strada VIII, n. 5 – Zona Industriale, I-95121 Catania (Italy); Sledziewski, T.; Krieger, M. [Friedrich-Alexander-University (FAU) Erlangen-Nuremberg, Department of Physics, Staudtstrasse 7/Bld. A3, D-91058 Erlangen (Germany); Chassagne, T.; Zielinski, M. [NOVASiC, Savoie Technolac, BP267, F-73375 Le Bourget-du-Lac Cedex (France); Roccaforte, F. [CNR-IMM, Strada VIII, n. 5 – Zona Industriale, I-95121 Catania (Italy)

2016-02-28

Graphical abstract: - Highlights: • Processing and electrical characterization of MOS capacitors fabricated on 4H-SiC epilayers grown on 2°-off axis heavily doped substrates. • Excellent characteristics of the SiO{sub 2}/4H-SiC interface in terms of flatness, interface state density and oxide reliability. • Electrical behavior of the MOS devices comparable with that obtained for the state-of-the-art of 4°-off axis 4H-SiC material. • Demonstration of the maturity of the 2°-off axis material for application in 4H-SiC MOSFET device technology. - Abstract: In this paper, the electrical properties of the SiO{sub 2}/SiC interface on silicon carbide (4H-SiC) epilayers grown on 2°-off axis substrates were studied. After epilayer growth, chemical mechanical polishing (CMP) allowed to obtain an atomically flat surface with a roughness of 0.14 nm. Metal-oxide-semiconductor (MOS) capacitors, fabricated on this surface, showed an interface state density of ∼1 × 10{sup 12} eV{sup −1} cm{sup −2} below the conduction band, a value which is comparable to the standard 4°-off-axis material commonly used for 4H-SiC MOS-based device fabrication. Moreover, the Fowler–Nordheim and time-zero-dielectric breakdown analyses confirmed an almost ideal behavior of the interface. The results demonstrate the maturity of the 2°-off axis material for 4H-SiC MOSFET device fabrication.

Realization of Colored Multicrystalline Silicon Solar Cells with SiO2/SiNx:H Double Layer Antireflection Coatings

Directory of Open Access Journals (Sweden)

Minghua Li

2013-01-01

Full Text Available We presented a method to use SiO2/SiNx:H double layer antireflection coatings (DARC on acid textures to fabricate colored multicrystalline silicon (mc-Si solar cells. Firstly, we modeled the perceived colors and short-circuit current density (Jsc as a function of SiNx:H thickness for single layer SiNx:H, and as a function of SiO2 thickness for the case of SiO2/SiNx:H (DARC with fixed SiNx:H (refractive index n=2.1 at 633 nm, and thickness = 80 nm. The simulation results show that it is possible to achieve various colors by adjusting the thickness of SiO2 to avoid significant optical losses. Therefore, we carried out the experiments by using electron beam (e-beam evaporation to deposit a layer of SiO2 over the standard SiNx:H for 156×156 mm2 mc-Si solar cells which were fabricated by a conventional process. Semisphere reflectivity over 300 nm to 1100 nm and I-V measurements were performed for grey yellow, purple, deep blue, and green cells. The efficiency of colored SiO2/SiNx:H DARC cells is comparable to that of standard SiNx:H light blue cells, which shows the potential of colored cells in industrial applications.

Electrically modulated lateral photovoltage in μc-SiOx:H/a-Si:H/c-Si p-i-n structure at low temperatures

Energy Technology Data Exchange (ETDEWEB)

Liu, Jihong; Qiao, Shuang, E-mail: sqiao@hbu.edu.cn; Wang, Jianglong; Wang, Shufang, E-mail: sfwang@hbu.edu.cn; Fu, Guangsheng

2017-04-15

Graphical abstract: In this paper, the temperature dependence of the LPE has been experimentally studied under illumination of different lasers ranging from visible to infrared for the μc-SiOx:H/a-Si:H/c-Si p-i-n structure. It was found that the position sensitivity increases nearly linearly with wavelength from 405 nm to 980 nm in the whole temperature range, and the saturated position sensitivity decreased quickly from 32.4 mV/mm to a very low value of 1.26 mV/mm and the nonlinearity improved from 7.01% to 3.54% with temperature decreasing from 296 K to 80 K for 532 nm laser illumination. By comparing the experiment results of μc-SiOx:H/a-Si:H/c-Si and ITO/c-Si, it is suggest that the position sensitivity was mainly determined by the temperature-dependent SB and the nonlinearity was directly related to the decreased resistivity of conductive layer. When an external bias voltage was applied, the LPE improved greatly and the position sensitivity of 361.35 mV/mm under illumination of 80 mW at 80 K is 286.7 times as large as that without biased voltage. More importantly, both the position sensitivity and the nonlinearity were independent of temperature again, which can be ascribed to the large constant transmission probability and diffusion length induced by the greatly increased SB. Our research provides an essential insight on the bias voltage-modulated LPE at different temperatures, and this temperature-independent greatly improved LPE is thought to be very useful for developing novel photoelectric devices. - Highlights: • The LPE is proportional to the laser wavelength in the whole temperature range. • The LPE decreases gradually with decreasing temperature from 296 K to 80 K. • Nonlinearity of the LPV curve improves a little with decreasing temperature. • The LPE improves dramatically and is independent of temperature with the aid of a bias voltage. - Abstract: The lateral photovoltaic effect (LPE) in μc-SiOx:H/a-Si:H/c-Si p-i-n structure is studied

Local-mode vibrations of water

Energy Technology Data Exchange (ETDEWEB)

Lawton, R.T.; Child, M.S. (Oxford Univ. (UK). Dept. of Theoretical Chemistry)

1981-05-11

Quantum-mechanical eigenvalues for the stretching vibrations of H/sub 2/O on the Sorbie-Murrell potential surface are shown to contain a series of local-mode doublets, with splittings which vary as the energy increases from 100 cm/sup -1/ at v=1 to 0.001 cm/sup -1/ at v=8. Preliminary calculations indicate that this pattern is largely unaffected by inclusion of the bending vibrational mode.

Local-mode vibrations of water

Energy Technology Data Exchange (ETDEWEB)

Lawton, R.T.; Child, M.S. (Oxford Univ. (UK). Dept. of Theoretical Chemistry)

1981-05-11

Quantum-mechanical eigenvalues for the stretching vibrations of H/sub 2/O on the Sorbie-Murrell potential surface are shown to contain a series of local-mode doublets, with splittings which vary as the energy increases from 100 cm/sup -1/ at theta=1 to 0.001 cm/sup -1/ at theta=8. Preliminary calculations indicate that this pattern is largely unaffected by inclusion of the bending vibrational mode.

a-Si:H/μc-Si:H solar cells prepared by the single-chamber processes—minimization of phosphorus and boron cross contamination

Energy Technology Data Exchange (ETDEWEB)

Merdzhanova, Tsvetelina, E-mail: t.merdzhanova@fz-juelich.de; Zimmermann, Thomas; Zastrow, Uwe; Gordijn, Aad; Beyer, Wolfhard

2013-07-01

Single-chamber processes for the deposition of high efficiency thin-film silicon tandem cells of an a-Si:H p-i-n (top cell)/μc-Si:H p-i-n (bottom cell) structure involving short fabrication time are reported. An industry relevant reactor and an excitation frequency of 13.56 MHz were used. The conversion efficiency is found to be highly sensitive to dopant cross contamination into the μc-Si:H i-layer of the bottom cell and within the n/p-interface of the tunnel recombination junction (TRJ). Different reactor treatments at the p/i-interfaces of the top and bottom cells and at the n/p-interface of the TRJ were applied, aiming to prevent dopant cross contamination. The phosphorus and the boron concentrations were evaluated by secondary ion mass spectrometry measurements. Phosphorus cross contamination after TRJ n-layer deposition is found to result in significant n-type doping of the μc-Si:H i-layer of the bottom cell if no reactor treatment is applied. In situ reactor treatment via an Ar flush and pumping step of 15 min applied at the n/p-interface of TRJ results in reduction of the μc-Si:H i-layer phosphorus concentration to values below 10{sup 17} cm{sup −3}. A conversion efficiency of 11.8% for such tandem cells is demonstrated. Shorter interface treatment time with phosphorus concentrations in the μc-Si:H i-layer of about 5 × 10{sup 17} cm{sup −3} results in lower conversion efficiencies of 10.6%, mainly due to the decrease of open-circuit voltage and fill factor. - Highlights: • Single-chamber process for a-Si:H/μc-Si:H solar cell is developed. • P- and B-contaminations at n/p interface and μc-Si:H i-layer are quantified by SIMS. • Reactor treatment is required at n/p interface for minimum dopant cross contamination. • Ar-flush pumping of reactor reduces P concentration in μc-Si:H i-layer to 10{sup 17} cm{sup −3}{sub .} • Conversion efficiency of 11.4% is reached at reactor treatment time of 17 min.

Origin of the blue shift of the CH stretching band for 2-butoxyethanol in water.

Science.gov (United States)

Katsumoto, Yukiteru; Komatsu, Hiroyuki; Ohno, Keiichi

2006-07-26

The blue shift of the isolated CD stretching band of 2-butoxyethanol (C4E1), which is observed for the aqueous solution during the dilution process, has been investigated by infrared (IR) spectroscopy and quantum chemical calculations. Mono-deuterium-labeled C4E1's were employed to remove the severe overlapping among the CH stretching bands. The isolated CD stretching mode of the alpha-methylene in the butoxy group shows a large blue shift, while those of the beta-methylene and methyl groups are not largely shifted. The spectral simulation results for the C4E1/H2O complexes indicate that the large blue shift of the CD stretching band of the butoxy group arises mainly from the hydration of the ether oxygen atom.

Exceptional cracking behavior in H-implanted Si/B-doped Si0.70Ge0.30/Si heterostructures

Science.gov (United States)

Chen, Da; Wang, Dadi; Chang, Yongwei; Li, Ya; Ding, Rui; Li, Jiurong; Chen, Xiao; Wang, Gang; Guo, Qinglei

2018-01-01

The cracking behavior in H-implanted Si/B-doped Si0.70Ge0.30/Si structures after thermal annealing was investigated. The crack formation position is found to closely correlate with the thickness of the buried Si0.70Ge0.30 layer. For H-implanted Si containing a buried 3-nm-thick B-doped Si0.70Ge0.30 layer, localized continuous cracking occurs at the interfaces on both sides of the Si0.70Ge0.30 interlayer. Once the thickness of the buried Si0.70Ge0.30 layer increases to 15 and 70 nm, however, a continuous sharp crack is individually observed along the interface between the Si substrate and the B-doped Si0.70Ge0.30 interlayer. We attribute this exceptional cracking behavior to the existence of shear stress on both sides of the buried Si0.70Ge0.30 layer and the subsequent trapping of hydrogen, which leads to a crack in a well-controlled manner. This work may pave the way for high-quality Si or SiGe membrane transfer in a feasible manner, thus expediting its potential applications to ultrathin silicon-on-insulator (SOI) or silicon-germanium-on-insulator (SGOI) production.

Electro-physical properties of a Si-based MIS structure with a low-k SiOC(-H) film

Energy Technology Data Exchange (ETDEWEB)

Zakirov, Anvar Sagatovich; Navamathavan, Rangaswamy; Kim, Seung Hyun; Jang, Yong Jun; Jung, An Soo; Choi, Chi Kyu [Cheju National University, Jeju (Korea, Republic of)

2006-09-15

SiOC(-H) films with low dielectric constants have been prepared by using plasma enhanced chemical vapor deposition with a mixture of methyltriethoxysilane and oxygen precursors. The C-V characteristics of the structures, Al/SiOC(-H)/p-Si(100), were studied in the forward and the reverse directions by applying a polarizing potential. We found that the ratio of the maximum to the minimum capacitance (C{sub ma}x{sub /}C{sub min}) depended on the [MTES/(MTES+O{sub 2})] flow rate ratio. Annealed samples exhibited even greater reductions of the maximum capacitance and the dielectric constant of the SiOC(-H) samples. After annealing at 400 .deg. C, the measurement in the reverse direction revealed an interesting behavior in the form of strongly pronounced 'steps'. The bonds between Si-O and the -CH{sub 3} group reduced the surface charge density, and the distribution of the surface charge density depended on [MTES/(MTES+O{sub 2})] flow rate ratio and the annealing temperature because the fixed positive (Si-CH{sub 3}){sup +} and negative (Si-O){sup -} changed the configuration at the SiOC(-H)/p-Si(100) interface. The SiOC(-H) film had donor (O{sub 2}) and acceptor (Si-CH{sub 3} -groups) levels, and the electronic process at the SiOC(-H)/p-Si(100) interface was defined by the (Si-CH{sub 3}){sup +} and the (Si-O){sup -} bonds.

Light coupling and distribution for Si3N4/SiO2 integrated multichannel single-mode sensing system

Science.gov (United States)

Kaźmierczak, Andrzej; Dortu, Fabian; Schrevens, Olivier; Giannone, Domenico; Bouville, David; Cassan, Eric; Gylfason, Kristinn B.; Sohlström, Hans; Sanchez, Benito; Griol, Amadeu; Hill, Daniel

2009-01-01

We present an efficient and highly alignment-tolerant light coupling and distribution system for a multichannel Si3N4/SiO2 single-mode photonics sensing chip. The design of the input and output couplers and the distribution splitters is discussed. Examples of multichannel data obtained with the system are given.

Atomic Layer Deposition of Al2O3 on H-Passivated GeSi: Initial Surface Reaction Pathways with H/GeSi(100)-2 × 1

International Nuclear Information System (INIS)

Yu, Shi; Qing-Qing, Sun; Lin, Dong; Han, Liu; Shi-Jin, Ding; Wei, Zhang

2009-01-01

The reaction mechanisms of Al(CH 3 ) 3 (TMA) adsorption on H-passivated GeSi(100)-2 × 1 surface are investigated with density functional theory. The Si–Ge and Ge–Ge one-dimer cluster models are employed to represent the GeSi(100)-2 × 1 surface with different Ge compositions. For a Si-Ge dimer of a H-passivated SiGe surface, TMA adsorption on both Si–H * and Ge–H * sites is considered. The activation barrier of TMA with the Si–H * site (1.2eV) is higher than that of TMA with the Ge-H * site (0.91 eV), which indicates that the reaction proceeds more slowly on the Si-H * site than on the Ge-H * site. In addition, adsorption of TMA is more energetically favorable on the Ge–Ge dimer than on the Si–Ge dimer of H-passivated SiGe. (atomic and molecular physics)

Evolution of interfacial intercalation chemistry on epitaxial graphene/SiC by surface enhanced Raman spectroscopy

International Nuclear Information System (INIS)

Ferralis, Nicola; Carraro, Carlo

2014-01-01

Highlights: • H-intercalated epitaxial graphene–SiC interface studied with surface enhanced Raman. • Evolution of graphene and H–Si interface with UV-ozone, annealing and O-exposure. • H–Si interface and quasi-freestanding graphene are retained after UV-ozone treatment. • Enhanced ozonolytic reactivity at the edges of H-intercalated defected graphene. • Novel SERS method for characterizing near-surface graphene–substrate interfaces. - Abstract: A rapid and facile evaluation of the effects of physical and chemical processes on the interfacial layer between epitaxial graphene monolayers on SiC(0 0 0 1) surfaces is essential for applications in electronics, photonics, and optoelectronics. Here, the evolution of the atomic scale epitaxial graphene-buffer-layer–SiC interface through hydrogen intercalation, thermal annealings, UV-ozone etching and oxygen exposure is studied by means of single microparticle mediated surface enhanced Raman spectroscopy (smSERS). The evolution of the interfacial chemistry in the buffer layer is monitored through the Raman band at 2132 cm −1 corresponding to the Si-H stretch mode. Graphene quality is monitored directly by the selectively enhanced Raman signal of graphene compared to the SiC substrate signal. Through smSERS, a simultaneous correlation between optimized hydrogen intercalation in epitaxial graphene/SiC and an increase in graphene quality is uncovered. Following UV-ozone treatment, a fully hydrogen passivated interface is retained, while a moderate degradation in the quality of the hydrogen intercalated quasi-freestanding graphene is observed. While hydrogen intercalated defect free quasi-freestanding graphene is expected to be robust upon UV-ozone, thermal annealing, and oxygen exposure, ozonolytic reactivity at the edges of H-intercalated defected graphene results in enhanced amorphization of the quasi-freestanding (compared to non-intercalated) graphene, leading ultimately to its complete etching

Evolution of interfacial intercalation chemistry on epitaxial graphene/SiC by surface enhanced Raman spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Ferralis, Nicola, E-mail: ferralis@mit.edu [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Carraro, Carlo [Department of Chemical and Biomolecular Engineering, University of California, Berkeley, CA 94720 (United States)

2014-11-30

Highlights: • H-intercalated epitaxial graphene–SiC interface studied with surface enhanced Raman. • Evolution of graphene and H–Si interface with UV-ozone, annealing and O-exposure. • H–Si interface and quasi-freestanding graphene are retained after UV-ozone treatment. • Enhanced ozonolytic reactivity at the edges of H-intercalated defected graphene. • Novel SERS method for characterizing near-surface graphene–substrate interfaces. - Abstract: A rapid and facile evaluation of the effects of physical and chemical processes on the interfacial layer between epitaxial graphene monolayers on SiC(0 0 0 1) surfaces is essential for applications in electronics, photonics, and optoelectronics. Here, the evolution of the atomic scale epitaxial graphene-buffer-layer–SiC interface through hydrogen intercalation, thermal annealings, UV-ozone etching and oxygen exposure is studied by means of single microparticle mediated surface enhanced Raman spectroscopy (smSERS). The evolution of the interfacial chemistry in the buffer layer is monitored through the Raman band at 2132 cm{sup −1} corresponding to the Si-H stretch mode. Graphene quality is monitored directly by the selectively enhanced Raman signal of graphene compared to the SiC substrate signal. Through smSERS, a simultaneous correlation between optimized hydrogen intercalation in epitaxial graphene/SiC and an increase in graphene quality is uncovered. Following UV-ozone treatment, a fully hydrogen passivated interface is retained, while a moderate degradation in the quality of the hydrogen intercalated quasi-freestanding graphene is observed. While hydrogen intercalated defect free quasi-freestanding graphene is expected to be robust upon UV-ozone, thermal annealing, and oxygen exposure, ozonolytic reactivity at the edges of H-intercalated defected graphene results in enhanced amorphization of the quasi-freestanding (compared to non-intercalated) graphene, leading ultimately to its complete etching.

Effect of Manganese on Microstructures and Solidification Modes of Cast Fe-Mn-Si-Cr-Ni Shape Memory Alloys

Science.gov (United States)

Peng, Huabei; Wen, Yuhua; Du, Yangyang; Yu, Qinxu; Yang, Qin

2013-10-01

We investigated microstructures and solidification modes of cast Fe-(13-27)Mn-5.5Si-8.5Cr-5Ni shape memory alloys to clarify whether Mn was an austenite former during solidification. Furthermore, we examined whether the Creq/Nieq equations (Delong, Hull, Hammer and WRC-1992 equations) and Thermo-Calc software® together with database TCFE6 were valid to predict the solidification modes of cast Fe-(13-27)Mn-5.5Si-8.5Cr-5Ni shape memory alloys. The results have shown that the solidification modes of Fe-(13-27)Mn-5.5Si-8.5Cr-5Ni alloys changed from the F mode to the FA mode with increasing the Mn concentration. Mn is an austenite former during the solidification for the cast Fe-Mn-Si-Cr-Ni shape memory alloys. The Delong, Hull, Hammer, and WRC-1992 equations as well as Thermo-Calc software® together with database TCFE6 are invalid to predict the solidification modes of cast Fe-(13-27)Mn-5.5Si-8.5Cr-5Ni SMAs. To predict the solidification modes of cast Fe-Mn-Si-Cr-Ni alloys, a new Creq/Nieq equation should be developed or the thermodynamic database of Thermo-Calc software® should be corrected.

Effect of the CO2/SiH4 Ratio in the p-μc-SiO:H Emitter Layer on the Performance of Crystalline Silicon Heterojunction Solar Cells

Directory of Open Access Journals (Sweden)

Jaran Sritharathikhun

2014-01-01

Full Text Available This paper reports the preparation of wide gap p-type hydrogenated microcrystalline silicon oxide (p-μc-SiO:H films using a 40 MHz very high frequency plasma enhanced chemical vapor deposition technique. The reported work focused on the effects of the CO2/SiH4 ratio on the properties of p-μc-SiO:H films and the effectiveness of the films as an emitter layer of crystalline silicon heterojunction (c-Si-HJ solar cells. A p-μc-SiO:H film with a wide optical band gap (E04, 2.1 eV, can be obtained by increasing the CO2/SiH4 ratio; however, the tradeoff between E04 and dark conductivity must be considered. The CO2/SiH4 ratio of the p-μc-SiO:H emitter layer also significantly affects the performance of the solar cells. Compared to the cell using p-μc-Si:H (CO2/SiH4 = 0, the cell with the p-μc-SiO:H emitter layer performs more efficiently. We have achieved the highest efficiency of 18.3% with an open-circuit voltage (Voc of 692 mV from the cell using the p-μc-SiO:H layer. The enhancement in the Voc and the efficiency of the solar cells verified the potential of the p-μc-SiO:H films for use as the emitter layer in c-Si-HJ solar cells.

Ohmic H-mode studies in TUMAN-3

International Nuclear Information System (INIS)

Lebedev, S.V.; Andrejko, M.V.; Askinazi, L.G.; Golant, V.E.; Kornev, V.A.; Levin, L.S.; Tukachinsky, A.S.; Tendler, M.

1994-01-01

The spontaneous transition from Ohmically heated limiter discharges into the regime with improved confinement termed as ''Ohmic H-mode'' has been investigated in ''TUMAN-3''. The typical signatures of H-mode in tokamaks with powerful auxiliary heating have been observed: sharp drop of D α radiation with simultaneous increase in the electron density and stored energy, suppression of the density fluctuations and establishing the steep gradient near the periphery. The crucial role of the radial electric field in the L-H transition was found in the experiments with boundary biasing. The possibility of initiating the H-mode using single pellet injection was demonstrated. In Ohmic H-mode strong dependencies of τ E on plasma current and on input power and weak dependence on density were found. Thermal energy confinement time enhanced by a factor of 10 compared to predictions of Neo-Alcator scaling. Longest energy confinement time (30 ms) was obtained in the small tokamak TUMAN-3. Absolute values of the energy confinement time are in agreement with scaling proposed for description of the ELM-free H-modes in devices with powerful auxiliary heating (''DIII-D/JET H-mode'' scaling). (author)

Process-property relationships of SiC chemical vapor deposition in the Si/H/C/O system

International Nuclear Information System (INIS)

Richardson, C.; Takoudis, C.G.

1999-01-01

The thermal, chemical, and physical properties of SiC make it an attractive material for a wide range of applications from wear resistant coatings on tools to high temperature microelectronics operations. A comprehensive thermodynamic analysis has been performed for the Si/H/C/O system from which a priori process-property relationships of the chemical vapor deposition (CVD) of silicon carbide (SiC) are obtained. The parameter space for pure silicon carbide growth is reported for five orders of magnitude of the system water vapor level (1 ppb--100 ppm), four orders of magnitude of system pressure (0.1--760 Torr), and two orders of magnitude of C/Si feed ratio (0.25--20) and H 2 /Si feed ratio (50--10,000). Lower growth temperatures for pure SiC are predicted in clean systems with low system water vapor levels, at stoichiometric to near carbon excess conditions (C/Si ≅ 1 to C/Si > 1), at high carrier gas flow rates (large H 2 /Si feed ratios), and at low operating pressures. Because relative C/Si and H 2 /Si feed ratios have been considered, the predictions in this study are applicable to both multiple and single precursor systems. Further, these results are valid for the CVD of α-SiC as well as β-SiC. Experimental data reported on the growth of α-SiC and β-SiC are found to be in satisfactory agreement with the theoretical predictions, for numerous systems that include multiple and single source, silicon and carbon, species

C and Si delta doping in Ge by CH_3SiH_3 using reduced pressure chemical vapor deposition

International Nuclear Information System (INIS)

Yamamoto, Yuji; Ueno, Naofumi; Sakuraba, Masao; Murota, Junichi; Mai, Andreas; Tillack, Bernd

2016-01-01

C and Si delta doping in Ge are investigated using a reduced pressure chemical vapor deposition system to establish atomic-order controlled processes. CH_3SiH_3 is exposed at 250 °C to 500 °C to a Ge on Si (100) substrate using H_2 or N_2 carrier gas followed by a Ge cap layer deposition. At 350 °C, C and Si are uniformly adsorbed on the Ge surface and the incorporated C and Si form steep delta profiles below detection limit of SIMS measurement. By using N_2 as carrier gas, the incorporated C and Si doses in Ge are saturated at one mono-layer below 350 °C. At this temperature range, the incorporated C and Si doses are nearly the same, indicating CH_3SiH_3 is adsorbed on the Ge surface without decomposing the C−Si bond. On the other hand, by using H_2 as carrier gas, lower incorporated C is observed in comparison to Si. CH_3SiH_3 injected with H_2 carrier gas is adsorbed on Ge without decomposing the C−Si bond and the adsorbed C is reduced by dissociation of the C−Si bond during temperature ramp up to 550 °C. The adsorbed C is maintained on the Ge surface in N_2 at 550 °C. - Highlights: • C and Si delta doping in Ge is investigated using RPCVD system by CH_3SiH_3 exposure. • Atomically flat C and Si delta layers are fabricated at 350 °C. • Incorporated C and Si doses are saturated at one mono-layer below 350 °C. • CH_3SiH_3 adsorption occurred without decomposing C−Si bond. • Adsorbed C is desorbed due to dissociation by hydrogen during postannealing at 550 °C.

Experimental study on parasitic mode suppression using FeSiAl in relativistic klystron amplifier

International Nuclear Information System (INIS)

Zhang, Zehai

2015-01-01

Experimental study of parasitic mode suppression using electromagnetic attenuate material FeSiAl in an S-band Relativistic Klystron Amplifier (RKA) is presented in this paper. The FeSiAl powder is coated and sintered onto the inner surface of a drift tube which locates between the input and the middle cavity of the RKA. Cold tests show that the attenuate rate of the tube against parasitic mode TE 11 is about 50%. Experiments carried out on the Torch-01 accelerator present that the tube is effective in suppressing the parasitic mode. Two typical outputs are obtained. When the diode voltage is on a moderate level, the RKA operates well and the parasitic mode is totally suppressed. The pulse length of the High Power Microwave (HPM) almost equals the electron beam pulse length and the HPM average output power is about 300 MW, with a power efficiency of 10%. When the diode voltage is on a higher level, the output power and efficiency rise but the parasitic mode oscillation occurred and the pulse length is shortened. By contrast, the parasitic mode oscillation is too strong for the RKA to operate normally with un-sintered drift tube. The experimental study implies that FeSiAl is effective in suppressing the parasitic mode oscillation in a certain extent. However, total suppression needs a deeper attenuate rate and further investigation

Experimental study on parasitic mode suppression using FeSiAl in relativistic klystron amplifier

Energy Technology Data Exchange (ETDEWEB)

Zhang, Zehai [College of Basic Education, National University of Defense Technology, Changsha, Hunan 410072 (China)

2015-03-15

Experimental study of parasitic mode suppression using electromagnetic attenuate material FeSiAl in an S-band Relativistic Klystron Amplifier (RKA) is presented in this paper. The FeSiAl powder is coated and sintered onto the inner surface of a drift tube which locates between the input and the middle cavity of the RKA. Cold tests show that the attenuate rate of the tube against parasitic mode TE{sub 11} is about 50%. Experiments carried out on the Torch-01 accelerator present that the tube is effective in suppressing the parasitic mode. Two typical outputs are obtained. When the diode voltage is on a moderate level, the RKA operates well and the parasitic mode is totally suppressed. The pulse length of the High Power Microwave (HPM) almost equals the electron beam pulse length and the HPM average output power is about 300 MW, with a power efficiency of 10%. When the diode voltage is on a higher level, the output power and efficiency rise but the parasitic mode oscillation occurred and the pulse length is shortened. By contrast, the parasitic mode oscillation is too strong for the RKA to operate normally with un-sintered drift tube. The experimental study implies that FeSiAl is effective in suppressing the parasitic mode oscillation in a certain extent. However, total suppression needs a deeper attenuate rate and further investigation.

Experimental study on parasitic mode suppression using FeSiAl in relativistic klystron amplifier

Science.gov (United States)

Zhang, Zehai

2015-03-01

Experimental study of parasitic mode suppression using electromagnetic attenuate material FeSiAl in an S-band Relativistic Klystron Amplifier (RKA) is presented in this paper. The FeSiAl powder is coated and sintered onto the inner surface of a drift tube which locates between the input and the middle cavity of the RKA. Cold tests show that the attenuate rate of the tube against parasitic mode TE11 is about 50%. Experiments carried out on the Torch-01 accelerator present that the tube is effective in suppressing the parasitic mode. Two typical outputs are obtained. When the diode voltage is on a moderate level, the RKA operates well and the parasitic mode is totally suppressed. The pulse length of the High Power Microwave (HPM) almost equals the electron beam pulse length and the HPM average output power is about 300 MW, with a power efficiency of 10%. When the diode voltage is on a higher level, the output power and efficiency rise but the parasitic mode oscillation occurred and the pulse length is shortened. By contrast, the parasitic mode oscillation is too strong for the RKA to operate normally with un-sintered drift tube. The experimental study implies that FeSiAl is effective in suppressing the parasitic mode oscillation in a certain extent. However, total suppression needs a deeper attenuate rate and further investigation.

Rear-Sided Passivation by SiNx:H Dielectric Layer for Improved Si/PEDOT:PSS Hybrid Heterojunction Solar Cells.

Science.gov (United States)

Sun, Yiling; Gao, Pingqi; He, Jian; Zhou, Suqiong; Ying, Zhiqin; Yang, Xi; Xiang, Yong; Ye, Jichun

2016-12-01

Silicon/organic hybrid solar cells have recently attracted great attention because they combine the advantages of silicon (Si) and the organic cells. In this study, we added a patterned passivation layer of silicon nitride (SiNx:H) onto the rear surface of the Si substrate in a Si/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) ( PSS) hybrid solar cell, enabling an improvement of 0.6 % in the power conversion efficiency (PCE). The addition of the SiNx:H layer boosted the open circuit voltage (V oc) from 0.523 to 0.557 V, suggesting the well-passivation property of the patterned SiNx:H thin layer that was created by plasma-enhanced chemical vapor deposition and lithography processes. The passivation properties that stemmed from front PSS, rear-SiNx:H, front PSS/rear-SiNx:H, etc. are thoroughly investigated, in consideration of the process-related variations.

Progressive degradation in a-Si: H/SiN thin film transistors

NARCIS (Netherlands)

Merticaru, A.R.; Mouthaan, A.J.; Kuper, F.G.

2003-01-01

In this paper we present the study of gate-stress induced degradation in a-Si:H/SiN TFTs. The drain current transient during gate bias stress (forward or reverse bias) and subsequent relaxation cannot be fitted with the models existent in the literature but it shows to be described by a progressive

Characterisation of point defects in SiC by microscopic optical spectroscopy

International Nuclear Information System (INIS)

Evans, G.A.

2001-09-01

Defects have a dramatic effect on the properties of semiconductors. In SiC, intrinsic defects can be introduced during growth or device-processing steps such as implantation. In this work electron irradiation has been used for the controlled generation of defects in SiC. The irradiated material has been annealed and subsequent low temperature photoluminescence (LTPL) measurements have been performed. A key element in this work has been the ability to perform both the irradiation and characterisation on a microscopic scale. These results have allowed a variety of new optical centres to be discovered, and have also significantly enhanced the pool of knowledge about other defect centres. Utilising low voltage irradiations has enabled the electron irradiation voltage displacement thresholds for Carbon and Silicon displacements to be investigated. In 4H-SiC the electron irradiation voltage displacement thresholds were found to be 88kV for C displacement and 225kV for Si displacement. A large number of previously unreported luminescence features have been measured in 4H, 6H and 15R-SiC material. The criteria used for comparison are the voltage threshold, annealing characteristics, spatial distribution with respect to the irradiated region, and the characteristics of associated local modes and vibronic structures. Compelling evidence has been found to support the assignment of centres in 4H and 6H-SiC to a C-C dumbbell split interstitial defect. Two high energy local modes at 133meV and 180meV are associated with these centres. In 13 C enriched 6H-SiC material the 180meV local mode splits into three components whilst the 133meV local mode splits into two components. This splitting is interpreted as being caused by isotopic substitutions between the components of the C-C dumbbell. The high energy local mode corresponds to the bonding between the two constituent atoms of the dumbbell whilst the low energy local mode is associated with the bonding between either a C 13 or 12

Magnitude and duration of stretch modulate fibroblast remodeling.

Science.gov (United States)

Balestrini, Jenna L; Billiar, Kristen L

2009-05-01

Mechanical cues modulate fibroblast tractional forces and remodeling of extracellular matrix in healthy tissue, healing wounds, and engineered matrices. The goal of the present study is to establish dose-response relationships between stretch parameters (magnitude and duration per day) and matrix remodeling metrics (compaction, strength, extensibility, collagen content, contraction, and cellularity). Cyclic equibiaxial stretch of 2-16% was applied to fibroblast-populated fibrin gels for either 6 h or 24 h/day for 8 days. Trends in matrix remodeling metrics as a function of stretch magnitude and duration were analyzed using regression analysis. The compaction and ultimate tensile strength of the tissues increased in a dose-dependent manner with increasing stretch magnitude, yet remained unaffected by the duration in which they were cycled (6 h/day versus 24 h/day). Collagen density increased exponentially as a function of both the magnitude and duration of stretch, with samples stretched for the reduced duration per day having the highest levels of collagen accumulation. Cell number and failure tension were also dependent on both the magnitude and duration of stretch, although stretch-induced increases in these metrics were only present in the samples loaded for 6 h/day. Our results indicate that both the magnitude and the duration per day of stretch are critical parameters in modulating fibroblast remodeling of the extracellular matrix, and that these two factors regulate different aspects of this remodeling. These findings move us one step closer to fully characterizing culture conditions for tissue equivalents, developing improved wound healing treatments and understanding tissue responses to changes in mechanical environments during growth, repair, and disease states.

Current–voltage characteristics of high-voltage 4H-SiC p{sup +}–n{sub 0}–n{sup +} diodes in the avalanche breakdown mode

Energy Technology Data Exchange (ETDEWEB)

Ivanov, P. A., E-mail: Pavel.Ivanov@mail.ioffe.ru; Potapov, A. S.; Samsonova, T. P.; Grekhov, I. V. [Ioffe Physical–Technical Institute (Russian Federation)

2017-03-15

p{sup +}–n{sub 0}–n{sup +} 4H-SiC diodes with homogeneous avalanche breakdown at 1860 V are fabricated. The pulse current–voltage characteristics are measured in the avalanche-breakdown mode up to a current density of 4000 A/cm{sup 2}. It is shown that the avalanche-breakdown voltage increases with increasing temperature. The following diode parameters are determined: the avalanche resistance (8.6 × 10{sup –2} Ω cm{sup 2}), the electron drift velocity in the n{sub 0} base at electric fields higher than 10{sup 6} V/cm (7.8 × 10{sup 6} cm/s), and the relative temperature coefficient of the breakdown voltage (2.1 × 10{sup –4} K{sup –1}).

Poloidal rotation and the evolution of H-mode and VH-mode profiles

International Nuclear Information System (INIS)

Hinton, F.L.; Staebler, G.M.; Kim, Y.B.

1993-12-01

The physics which determines poloidal rotation, and its role in the development of profiles during H- and VH-modes, is discussed. A simple phenomenological transport model, which incorporates the rvec E x rvec B flow shear suppression of turbulence, is shown to predict profile evolution similar to that observed experimentally during H-mode and VH-mode

Interconversion of η3-H2SiRR' σ-complexes and 16-electron silylene complexes via reversible H-H or C-H elimination.

Science.gov (United States)

Lipke, Mark C; Neumeyer, Felix; Tilley, T Don

2014-04-23

Solid samples of η(3)-silane complexes [PhBP(Ph)3]RuH(η(3)-H2SiRR') (R,R' = Et2, 1a; PhMe, 1b; Ph2, 1c, MeMes, 1d) decompose when exposed to dynamic vacuum. Gas-phase H2/D2 exchange between isolated, solid samples of 1c-d3 and 1c indicate that a reversible elimination of H2 is the first step in the irreversible decomposition. An efficient solution-phase trap for hydrogen, the 16-electron ruthenium benzyl complex [PhBP(Ph)3]Ru[η(3)-CH2(3,5-Me2C6H3)] (3) reacts quantitatively with H2 in benzene via elimination of mesitylene to form the η(5)-cyclohexadienyl complex [PhBP(Ph)3]Ru(η(5)-C6H7) (4). This H2 trapping reaction was utilized to drive forward and quantify the elimination of H2 from 1b,d in solution, which resulted in the decomposition of 1b,d to form 4 and several organosilicon products that could not be identified. Reaction of {[PhBP(Ph)3]Ru(μ-Cl)}2 (2) with (THF)2Li(SiHMes2) forms a new η(3)-H2Si species [PhBP(Ph)3]Ru[CH2(2-(η(3)-H2SiMes)-3,5-Me2C6H2)] (5) which reacts with H2 to form the η(3)-H2SiMes2 complex [PhBP(Ph)3]RuH(η(3)-H2SiMes2) (1e). Complex 1e was identified by NMR spectroscopy prior to its decomposition by elimination of Mes2SiH2 to form 4. DFT calculations indicate that an isomer of 5, the 16-electron silylene complex [PhBP(Ph)3]Ru(μ-H)(═SiMes2), is only 2 kcal/mol higher in energy than 5. Treatment of 5 with XylNC (Xyl = 2,6-dimethylphenyl) resulted in trapping of [PhBP(Ph)3]Ru(μ-H)(═SiMes2) to form the 18-electron silylene complex [PhBP(Ph)3]Ru(CNXyl)(μ-H)(═SiMes2) (6). A closely related germylene complex [PhBP(Ph)3]Ru[CN(2,6-diphenyl-4-MeC6H2)](H)(═GeH(t)Bu) (8) was prepared from reaction of (t)BuGeH3 with the benzyl complex [PhBP(Ph)3]Ru[CN(2,6-diphenyl-4-MeC6H2)][η(1)-CH2(3,5-Me2C6H3)] (7). Single crystal XRD analysis indicated that unlike for 6, the hydride ligand in 8 is a terminal hydride that does not engage in 3c-2e Ru-H → Ge bonding. Complex 1b is an effective precatalyst for the catalytic Ge-H dehydrocoupling

Tuning by means of laser annealing of electronic and structural properties of nc-Si/a-Si:H

International Nuclear Information System (INIS)

Poliani, E.; Somaschini, C.; Sanguinetti, S.; Grilli, E.; Guzzi, M.; Le Donne, A.; Binetti, S.; Pizzini, S.; Chrastina, D.; Isella, G.

2009-01-01

We report the effect of laser annealing on the structural and electronic properties of nc-Si/a-Si:H samples grown close to the amorphous to nanocrystalline transition. The nc-Si/a-Si:H thin films were produced by low-energy plasma-enhanced chemical vapor deposition through a gas discharge containing SiH 4 . The samples were subjected to different laser fluencies and were characterized for changes in their structural and electronic properties via Raman spectroscopy and photoluminescence measurements. The laser annealing effects are twofold: i) the nanocrystalline phase grows, during the laser treatment, respect to the amorphous phase; ii) the photoluminescence spectra show the suppression, after laser annealing, of the frequencies above the crystalline Si band-gap.

Tailored Cyclic and Linear Polycarbosilazanes by Barium-Catalyzed N-H/H-Si Dehydrocoupling Reactions.

Science.gov (United States)

Bellini, Clément; Orione, Clément; Carpentier, Jean-François; Sarazin, Yann

2016-03-07

Ba[CH(SiMe3 )2 ]2 (THF)3 catalyzes the fast and controlled dehydrogenative polymerization of Ph2 SiH2 and p-xylylenediamine to afford polycarbosilazanes. The structure (cyclic versus linear; end-groups) and molecular weight of the macromolecules can be tuned by adjusting the Ph2 SiH2 /diamine feed ratio. A detailed analysis of the resulting materials (mol. wt up to ca. 10 000 g mol(-1) ) is provided. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Operation and Modulation of H7 Current Source Inverter with Hybrid SiC and Si Semiconductor Switches

DEFF Research Database (Denmark)

Wang, Weiqi; Gao, Feng; Yang, Yongheng

2018-01-01

This paper proposes an H7 current source inverter (CSI) consisting of a single parallel-connected silicon carbide (SiC) switch and a traditional silicon (Si) H6 CSI. The proposed H7 CSI takes the advantages of the SiC switch to maintain high efficiency, while significantly increasing the switching...... as an all-SiC-switch converter in terms of high performance and high efficiency with reduced DC inductance. It provides a cost-effective solution to addressing the efficiency issue of conventional CSI systems. Simulations and experiments are performed to validate the effectiveness of the proposed H7 CSI...

In situ doping of catalyst-free InAs nanowires with Si: Growth, polytypism, and local vibrational modes of Si

Energy Technology Data Exchange (ETDEWEB)

Dimakis, Emmanouil; Ramsteiner, Manfred; Huang, Chang-Ning; Trampert, Achim; Riechert, Henning; Geelhaar, Lutz [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Davydok, Anton; Biermanns, Andreas; Pietsch, Ullrich [Festkörperphysik, Universität Siegen, Walter-Flex-Str. 3, 57072 Siegen (Germany)

2013-09-30

Growth and structural aspects of the in situ doping of InAs nanowires with Si have been investigated. The nanowires were grown catalyst-free on Si(111) substrates by molecular beam epitaxy. The supply of Si influenced the growth kinetics, affecting the nanowire dimensions, but not the degree of structural polytypism, which was always pronounced. As determined by Raman spectroscopy, Si was incorporated as substitutional impurity exclusively on In sites, which makes it a donor. Previously unknown Si-related Raman peaks at 355 and 360 cm{sup −1} were identified, based on their symmetry properties in polarization-dependent measurements, as the two local vibrational modes of an isolated Si impurity on In site along and perpendicular, respectively, to the c-axis of the wurtzite InAs crystal.

Role of interface states on electron transport in a-Si:H/nc-Si:H multilayer structures

Science.gov (United States)

Yadav, Asha; Kumari, Juhi; Agarwal, Pratima

2018-05-01

In this paper we report, I-V characteristic of a-Si:H/nc-Si:H multilayer structures in lateral as well as transverse direction. In lateral geometry, where the interfaces are parallel to the direction of electronic transport, residual photo conductivity (persistent photoconductivity) is observed after the light was turned off. On the other hand, in transverse geometry, where interfaces are along the direction of electronic transport, the space charge limited currents are affected and higher density of states is obtained. The PPC was more in the structures where numbers of such interface were more. These results have been understood in terms of the charge carriers trapped at the interface, which influence the electronic transport.

Chemical vapor deposition of NiSi using Ni(PF3)4 and Si3H8

International Nuclear Information System (INIS)

Ishikawa, M.; Muramoto, I.; Machida, H.; Imai, S.; Ogura, A.; Ohshita, Y.

2007-01-01

NiSi x films were deposited using chemical vapor deposition (CVD) with a Ni(PF 3 ) 4 and Si 3 H 8 /H 2 gas system. The step coverage quality of deposited NiSi x was investigated using a horizontal type of hot-wall low pressure CVD reactor, which maintained a constant temperature throughout the deposition area. The step coverage quality improved as a function of the position of the gas flow direction, where PF 3 gas from decomposition of Ni(PF 3 ) 4 increased. By injecting PF 3 gas into the Ni(PF 3 ) 4 and Si 3 H 8 /H 2 gas system, the step coverage quality markedly improved. This improvement in step coverage quality naturally occurred when PF 3 gas was present, indicating a strong relationship. The Si/Ni deposit ratio at 250 deg. C is larger than at 180 deg. C. It caused a decreasing relative deposition rate of Ni to Si. PF 3 molecules appear to be adsorbed on the surface of the deposited film and interfere with faster deposition of active Ni deposition species

Wannier–Stark electro-optical effect, quasi-guided and photonic modes in 2D macroporous silicon structures with SiO_2 coatings

International Nuclear Information System (INIS)

Karachevtseva, L.; Goltviansky, Yu.; Sapelnikova, O.; Lytvynenko, O.; Stronska, O.; Bo, Wang; Kartel, M.

2016-01-01

Highlights: • The IR absorption spectra of oxidized macroporous silicon were studied. • The Wannier–Stark electro-optical effect on Si-SiO_2 boundary was confirmed. • An additional electric field of quasi-guided optical modes was evaluated. • The photonic modes and band gaps were measured as peculiarities in absorption spectra. - Abstract: Opportunities to enhance the properties of structured surfaces were demonstrated on 2D macroporous silicon structures with SiO_2 coatings. We investigated the IR light absorption oscillations in macroporous silicon structures with SiO2 coatings 0–800 nm thick. The Wannier–Stark electro-optical effect due to strong electric field on Si-SiO_2boundary and an additional electric field of quasi-guided optical modes were taken into account. The photonic modes and band gaps were also considered as peculiarities in absorbance spectra of macroporous silicon structures with a thick SiO_2 coating. The photonic modes do not coincide with the quasi-guided modes in the silicon matrix and do not appear in absorption spectra of 2D macroporous silicon structures with surface nanocrystals.

H-mode and confinement studies in ASDEX Upgrade

International Nuclear Information System (INIS)

Suttrop, W.; Ryter, F.; Mertens, V.; Gruber, O.; Murmann, H.; Salzmann, H.; Schweinzer, J.

2001-01-01

H-mode operational boundaries and H-mode confinement are investigated on ASDEX Upgrade. The local edge parameter threshold for H-mode holds independent of divertor geometry and changes little with ion mass. The deviation of the H-mode power threshold at densities near the Greenwald limit can be understood as a consequence of a confinement deterioration, caused by 'stiff' temperature profiles and lack of core density gradients in gas puff fuelled discharges. Ion and electron temperature profiles can be described by a lower limit of gradient length L T =T/T'. (author)

The dependence of the interface and shape on the constrained growth of nc-Si in a-SiN sub x /a-Si:H/a-SiN sub x structures

CERN Document Server

Zhang Li; Wang Li; Li Wei; Xu Jun; Huang Xin Fan; Chen Kun Ji

2002-01-01

Size-controlled nanocrystalline silicon (nc-Si) has been prepared from a-SiN sub x /a-Si:H/a-SiN sub x ('a' standing for amorphous) structures by thermal annealing. Transmission electron microscope analyses show that the lateral size of the nc-Si is controlled by the annealing conditions and the a-Si sublayer thickness. The deviation of the nc-Si grain size distribution decreases with the a-Si sublayer thickness, so thinner a-Si sublayers are favourable for obtaining uniform nc-Si grains. In the a-Si:H (10 nm) sample annealed at 1000 deg. C for 30 min, an obvious bi-modal size distribution of nc-Si grains appears, but no obvious bi-modal size distribution is found in other samples with thinner a-Si:H sublayers. On the basis of the experimental results, we discuss the process of transition from the sphere-like shape to the disc-like shape in the growth model of the nc-Si crystallization. The critical thickness of the a-Si sublayer for the constrained crystallization can be determined by the present model. More...

Temperature variation of non-radiative recombination rate in a-Si:H films

Energy Technology Data Exchange (ETDEWEB)

Ogihara, C. [Department of Applied Science, Yamaguchi University, Ube 755-8611 (Japan); Morigaki, K. [Department of Electrical and Digital-System Engineering, Hiroshima Institute of Technology, Miyake, Saeki-ku, Hiroshima 731-5193 (Japan); resent address: C-305, 2-12 Wakabadai, Inagi, Tokyo 206-0824 (Japan)

2012-12-15

Temperature variation of the recombination rates has been investigated for the electron-hole pairs responsible for defect PL in a defective a-Si:H film as grown. The results are compared with those obtained for a high-quality a-Si:H film after illumination. The results of the nonradiative recombination rate are fitted by a theoretical prediction for the case of strong electron-phonon coupling in the case of the defective a-Si:H film similarly to the case of the illuminated high-quality a-Si:H film. Difference between the frequency of the phonon associated with the non-radiative recombination process in the defective a-Si:H film and that in the illuminated highquality a-Si:H film is discussed by considering the influence of the amorphous network in the a-Si:H films affected by the preparation conditions and the nature of the native and photo-created defects. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

a Study of Vibrational Mode Coupling in 2-FLUOROETHANOL and 1,2-DIFLUOROETHANE Using High-Resolution Infrared Spectroscopy.

Science.gov (United States)

Mork, Steven Wayne

High resolution infrared spectroscopy was used to examine intramolecular vibrational interactions in 2 -fluoroethanol (2FE) and 1,2-difluoroethane (DFE). A high resolution infrared spectrophotometer capable of better than 10 MHz spectral resolution was designed and constructed. The excitation source consists of three lasers: an argon-ion pumped dye laser which pumps a color -center laser. The infrared beam from the color-center laser is used to excite sample molecules which are rotationally and vibrationally cooled in a supersonic molecular beam. Rovibrational excitation of the sample molecules is detected by monitoring the kinetic energy of the molecular beam with a bolometer. The high resolution infrared spectrum of 2FE was collected and analyzed over the 2977-2990 cm^ {-1}^ectral region. This region contains the asymmetric CH stretch on the fluorinated carbon. The spectrum revealed extensive perturbations in the rotational fine structure. Analysis of these perturbations has provided a quantitative measure of selective vibrational mode coupling between the C-H stretch and its many neighboring dark vibrational modes. Interestingly, excitation of the C-H stretch is known to induce a photoisomerization reaction between 2FE's Gg^' and Tt conformers. Implications of the role of mode coupling in the reaction mechanism are also addressed. Similarly, the high resolution infrared spectrum of DFE was collected and analyzed over the 2978-2996 cm ^{-1}^ectral region. This region contains the symmetric combination of asymmetric C-H stretches in DFE. Perturbations in the rotational fine structure indicate vibrational mode coupling to a single dark vibrational state. The dark state is split by approximately 19 cm^{-1} due to tunneling between two identical gauche conformers. The coupling mechanism is largely anharmonic with a minor component of B/C-plane Coriolis coupling. Effects of centrifugal distortion along the molecular A-axis are also observed. The coupled vibrational

Si surface passivation by SiOx:H films deposited by a low-frequency ICP for solar cell applications

International Nuclear Information System (INIS)

Zhou, H P; Wei, D Y; Xu, S; Xiao, S Q; Xu, L X; Huang, S Y; Guo, Y N; Khan, S; Xu, M

2012-01-01

Hydrogenated silicon suboxide (SiO x :H) thin films are fabricated by a low-frequency inductively coupled plasma of hydrogen-diluted SiH 4 + CO 2 at a low temperature (100 °C). Introduction of a small amount of oxygen into the film results in a predominantly amorphous structure, wider optical bandgap, increased H content, lower conductivity and higher activation energy. The minority carrier lifetime in the SiO x :H-passivated p-type Si substrate is up to 428 µs with a reduced incubation layer at the interface. The associated surface recombination velocity is as low as 70 cm s -1 . The passivation behaviour dominantly originates from the H-related chemical passivation. The passivation effect is also demonstrated by the excellent photovoltaic performance of the heterojunction solar cell with the SiO x :H-based passivation and emitter layers.

Transient filament stretching rheometer II

DEFF Research Database (Denmark)

Kolte, Mette Irene; Rasmussen, Henrik K.; Hassager, Ole

1997-01-01

The Lagrangian sspecification is used to simulate the transient stretching filament rheometer. Simulations are performed for dilute PIB-solutions modeled as a four mode Oldroyd-B fluid and a semidilute PIB-solution modeled as a non-linear single integral equation. The simulations are compared...

Electrically driven hybrid Si/III-V Fabry-Pérot lasers based on adiabatic mode transformers.

Science.gov (United States)

Ben Bakir, B; Descos, A; Olivier, N; Bordel, D; Grosse, P; Augendre, E; Fulbert, L; Fedeli, J M

2011-05-23

We report the first demonstration of an electrically driven hybrid silicon/III-V laser based on adiabatic mode transformers. The hybrid structure is formed by two vertically superimposed waveguides separated by a 100-nm-thick SiO2 layer. The top waveguide, fabricated in an InP/InGaAsP-based heterostructure, serves to provide optical gain. The bottom Si-waveguides system, which supports all optical functions, is constituted by two tapered rib-waveguides (mode transformers), two distributed Bragg reflectors (DBRs) and a surface-grating coupler. The supermodes of this hybrid structure are controlled by an appropriate design of the tapers located at the edges of the gain region. In the middle part of the device almost all the field resides in the III-V waveguide so that the optical mode experiences maximal gain, while in regions near the III-V facets, mode transformers ensure an efficient transfer of the power flow towards Si-waveguides. The investigated device operates under quasi-continuous wave regime. The room temperature threshold current is 100 mA, the side-mode suppression ratio is as high as 20 dB, and the fiber-coupled output power is ~7 mW.

Characteristics of the First H-mode Discharges in NSTX

International Nuclear Information System (INIS)

Maingi, R.; Bell, M.G.; Bell, R.E.; Bush, C.E.; Fredrickson, E.D.; Gates, D.A.; Kaye, S.M.; Kugel, H.W.; LeBlanc, B.P.; Menard, J.E.; Mueller, D.; Sabbagh, S.A.; Stutman, D.; Taylor, G.; Johnson, D.W.; Kaita, R.; Maqueda, R.J.; Ono, M.; Paoletti, F.; Peng, Y-K.M.; Roquemore, A.L.; Skinner, C.H.; Soukhanovskii, V.A.; Synakowski, E.J.

2001-01-01

We report observations of the first low-to-high (L-H) confinement mode transitions in the National Spherical Torus Experiment (NSTX). The H-mode energy confinement time increased over reference L-mode discharges transiently by 100-300%, as high as ∼150 ms. This confinement time is ∼1.8-2.3 times higher than predicted by a multi-machine ELM-free H-mode scaling. This achievement extends the H-mode window of fusion devices down to a record low aspect ratio (R/a) ∼ 1.3, challenging both confinement and L-H power thresholds scalings based on conventional aspect ratio tokamaks

Diodes of nanocrystalline SiC on n-/n+-type epitaxial crystalline 6H-SiC

Science.gov (United States)

Zheng, Junding; Wei, Wensheng; Zhang, Chunxi; He, Mingchang; Li, Chang

2018-03-01

The diodes of nanocrystalline SiC on epitaxial crystalline (n-/n+)6H-SiC wafers were investigated, where the (n+)6H-SiC layer was treated as cathode. For the first unit, a heavily boron doped SiC film as anode was directly deposited by plasma enhanced chemical vapor deposition method on the wafer. As to the second one, an intrinsic SiC film was fabricated to insert between the wafer and the SiC anode. The third one included the SiC anode, an intrinsic SiC layer and a lightly phosphorus doped SiC film besides the wafer. Nanocrystallization in the yielded films was illustrated by means of X-ray diffraction, transmission electronic microscope and Raman spectrum respectively. Current vs. voltage traces of the obtained devices were checked to show as rectifying behaviors of semiconductor diodes, the conduction mechanisms were studied. Reverse recovery current waveforms were detected to analyze the recovery performance. The nanocrystalline SiC films in base region of the fabricated diodes are demonstrated as local regions for lifetime control of minority carriers to improve the reverse recovery properties.

Application of a-Si:H radiation detectors in medical imaging

International Nuclear Information System (INIS)

Lee, Hyoung-Koo.

1995-06-01

Monte Carlo simulations of a proposed a-Si:H-based current-integrating gamma camera were performed. The analysis showed that the intrinsic resolution of such a camera was 1 ∼ 2.5 mm, which is somewhat better than that of a conventional gamma camera, and that the greater blurring, due to the detection of scattered γ-rays, could be reduced considerably by image restoration techniques. This proposed gamma camera would be useful for imaging shallow organs such as the thyroid. Prototype charge-storage a-Si:H pixel detectors for such a camera were designed, constructed and tested. The detectors could store signal charge as long as 5 min at -26C. The thermal generation current in reverse biased a-Si:H p-i-n photodetectors was investigated, and the Poole-Frenkel effect was found to be the most significant source of the thermal generation current. Based on the Poole-Frenkel effect, voltage- and time-dependent thermal generation current was modeled. Using the model, the operating conditions of the proposed a-Si:H gamma camera, such as the operating temperature, the operating bias and the γ-scan period, could be predicted. The transient photoconductive gain mechanism in various a-Si:H devices was investigated for applications in digital radiography. Using the a-Si:H photoconductors in n-i-n configuration in pixel arrays, enhancement in signal collection (more than 200 times higher signal level) can be achieved in digital radiography, compared to the ordinary p-i-n type a-Si:H x-ray imaging arrays

Modes of oxidation in SiC-reinforced mullite/ZrO2 composites: Oxidation vs depth behavior

International Nuclear Information System (INIS)

Lin, C.C.; Ruh, R.

1999-01-01

Two basic oxidation modes of composites with oxidizing particles in a non-oxidizing matrix have been observed. Mode I is defined as the complete oxidation of all the particles within an outer layer of the composite, while mode II exhibits partial oxidation of the particles, deep into the composite. Using microscopic observations to plot the silica layer thickness on particles (whiskers) vs the depth of the particles (whiskers) below the composite surface is proposed as a powerful means of categorizing and quantifying actual oxidation modes. Thus, mullite/SiC-whisker composites were found to have mode I oxidation behavior, while certain (mullite + ZrO 2 )/SiC-whisker composites were found to exhibit mode II behavior, followed by a mixed mode after severe exposures. It is proposed that mode II behavior appears when oxygen diffusivity in the matrix is much higher than that in the product oxide layer

Excitation mechanism of Er{sup 3+} in a-Si:H; Anregungsmechanismus von Er{sup 3+} in a-Si:H

Energy Technology Data Exchange (ETDEWEB)

Kuehne, H.

2004-07-01

The aim of this work is the examination of the optoelectronical material a-Si:H (Er). It is characterised in the good electronic properties of the a-Si:H and the emission wavelength of 1.5 micrometer of erbium which coincides with the absorbtion minimum of glasfibres. Photoluminescence measurements confirm the assumption that oxigen is necessary for the optical activation of Er{sup 3+} in addition to the symmetrical breaking of the crystal field. The flexible lattice of a-Si:H enables a high concentration of Erbium up to 5.10{sup 21}/cm{sup 3} with a quantum efficiency of the luminescence of 0.5-1.5.10{sup -4} at room temperature. Photoluminescence excitation and absorption measurements of a-Si:H (Er) show, that there is no direct excitation of the erbium ions because the absorption of the Er{sup 3+} ions is two orders of magnitude below the absorption of silicon. The excitation or the Er{sup 3+} ions takes place through the absorption in silicon with additional energy transfer to Erbium. Photoluminescence measurements are done in order to differentiate between the possible excitation channels, the intrinsic bond-bond channel and the excitation through defects. The different temperature dependence of the intensity of the intrinsic luminescence (77 K - 300 K >3 orders of magnitude) in comparison with the defect luminescence and the Erbium luminescence (both 1-1.5 orders of magnitude) shows that the energy transfer takes place over defects. Luminescence and absorption measurements with boron doped a-Si:H (Er) show no dependence of the Erbium luminescence in dependence of defect density or the electrical charge of the defects. The luminescence spectra show a break in the defect luminescence at 0.84 eV. This agrees with the first excited state of the Er{sup 3+} ion combined with a clearly smaller line width of the defect luminescence (0.18 eV in comparision with >0.3 eV in erbium free a-Si:H). This result shows the resonance of the energy transfer. The resonance is

On global H-mode scaling laws for JET

International Nuclear Information System (INIS)

Kardaun, O.; Lackner, K.; Thomsen, K.; Christiansen, J.; Cordey, J.; Gottardi, N.; Keilhacker, M.; Smeulders, P.

1989-01-01

Investigation of the scaling of the energy confinement time τ E with various plasma parameters has since long been an interesting, albeit not uncontroversial topic in plasma physics. Various global scaling laws have been derived for ohmic as well as (NBI and/or RF heated) L-mode discharges. Due to the scarce availability of computerised, extensive and validated H-mode datasets, systematic statistical analysis of H-mode scaling behaviour has hitherto been limited. A common approach is to fit the available H-mode data by an L-mode scaling law (e.g., Kaye-Goldston, Rebut-Lallia) with one or two adjustable constant terms. In this contribution we will consider the alternative approach of fitting all free parameters of various simple scaling models to two recently compiled datasets consisting of about 140 ELM-free and 40 ELMy H-mode discharges, measured at JET in the period 1986-1988. From this period, approximately all known H-mode shots have been included that satisfy the following criteria: D-injected D + discharges with no RF heating, a sufficiently long (≥300 ms) and regular P NBI flat-top, and validated main diagnostics. (author) 13 refs., 1 tab

'Snowflake' H Mode in a Tokamak Plasma

International Nuclear Information System (INIS)

Piras, F.; Coda, S.; Duval, B. P.; Labit, B.; Marki, J.; Moret, J.-M.; Pitzschke, A.; Sauter, O.; Medvedev, S. Yu.

2010-01-01

An edge-localized mode (ELM) H-mode regime, supported by electron cyclotron heating, has been successfully established in a 'snowflake' (second-order null) divertor configuration for the first time in the TCV tokamak. This regime exhibits 2 to 3 times lower ELM frequency and 20%-30% increased normalized ELM energy (ΔW ELM /W p ) compared to an identically shaped, conventional single-null diverted H mode. Enhanced stability of mid- to high-toroidal-mode-number ideal modes is consistent with the different snowflake ELM phenomenology. The capability of the snowflake to redistribute the edge power on the additional strike points has been confirmed experimentally.

H2 dilution effect in the Cat-CVD processes of the SiH4/NH3 system

International Nuclear Information System (INIS)

Ansari, S.G.; Umemoto, Hironobu; Morimoto, Takashi; Yoneyama, Koji; Izumi, Akira; Masuda, Atsushi; Matsumura, Hideki

2006-01-01

Gas-phase diagnostics in the catalytic chemical vapor deposition processes of the SiH 4 /NH 3 /H 2 system were carried out to examine the effect of H 2 dilution. The decomposition efficiency of NH 3 showed a sharp decrease with the introduction of a small amount of SiH 4 , but this decrease was recovered by the addition of H 2 when the NH 3 pressure was low. On the other hand, at higher NH 3 pressures, the decomposition efficiency showed a minor dependence on the H 2 partial pressure. The addition of SiH 4 to the NH 3 system decreases the H-atom density by one order of magnitude, but this decrease is also recovered by H 2 addition. H atoms produced from H 2 must re-activate the catalyzer surfaces poisoned by SiH 4 when the NH 3 pressure is low

Effect of p-Layer and i-Layer Properties on the Electrical Behaviour of Advanced a-Si:H/a-SiGe:H Thin Film Solar Cell from Numerical Modeling Prospect

Directory of Open Access Journals (Sweden)

Peyman Jelodarian

2012-01-01

Full Text Available The effect of p-layer and i-layer characteristics such as thickness and doping concentration on the electrical behaviors of the a-Si:H/a-SiGe:H thin film heterostructure solar cells such as electric field, photogeneration rate, and recombination rate through the cell is investigated. Introducing Ge atoms to the Si lattice in Si-based solar cells is an effective approach in improving their characteristics. In particular, current density of the cell can be enhanced without deteriorating its open-circuit voltage. Optimization shows that for an appropriate Ge concentration, the efficiency of a-Si:H/a-SiGe solar cell is improved by about 6% compared with the traditional a-Si:H solar cell. This work presents a novel numerical evaluation and optimization of amorphous silicon double-junction (a-Si:H/a-SiGe:H thin film solar cells and focuses on optimization of a-SiGe:H midgap single-junction solar cell based on the optimization of the doping concentration of the p-layer, thicknesses of the p-layer and i-layer, and Ge content in the film. Maximum efficiency of 23.5%, with short-circuit current density of 267 A/m2 and open-circuit voltage of 1.13 V for double-junction solar cell has been achieved.

Raman and time resolved photoluminescence studies on the effect of temperature on disorder production in SHI irradiated N-doped 6H-SiC crystals

Energy Technology Data Exchange (ETDEWEB)

Sivaji, K., E-mail: sivaji.krishnan@yahoo.com [Materials Science Centre, Department of Nuclear Physics, University of Madras, Guindy Campus, Chennai 600025 (India); Viswanathan, E. [Materials Science Centre, Department of Nuclear Physics, University of Madras, Guindy Campus, Chennai 600025 (India); Selvakumar, S. [Materials Science Centre, Department of Nuclear Physics, University of Madras, Guindy Campus, Chennai 600025 (India); University of Tsukuba Tandem Accelerator Complex, University of Tsukuba, Tennodai 1-1-1, Ibaraki 305-8577 (Japan); Sankar, S. [Department of Physics, MIT Campus, Anna University, Chennai 600044 (India); Kanjilal, D. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, P.O. Box 10502, New Delhi 110067 (India)

2014-02-25

Highlights: • N doped SiC were irradiated with 150 MeV Ag{sup 12+} (1 × 10{sup 12} to 5 × 10{sup 13} ions/cm{sup 2}). • Local disorder are analyzed by studying the LO Raman mode of the irradiated sample. • The TRPL studies provided evidence of the formation of radiative centers at 80 K. -- Abstract: In this report, the effect of disorder accumulation in Swift Heavy Ion (SHI) irradiated 6H-SiC is distinguished with respect to the irradiation temperature, viz., 80 K and 300 K. The samples were irradiated with 150 MeV Ag{sup 12+} ions with different fluences ranging from 1 × 10{sup 12} to 5 × 10{sup 13} ions/cm{sup 2}. The structural and optical properties of N-doped 6H-SiC in its pristine condition and after SHI irradiation have been studied. The changes observed by Raman spectroscopy and Time resolved photoluminescence (TRPL) spectroscopy were ascribed to the disorder accumulation in 6H-SiC. The local disorder has been analyzed by studying the LO Raman mode of the irradiated sample in comparison to the pristine sample. The TRPL studies have provided evidence of the formation of radiative centers after irradiation at 80 K.

The molecular structure of the borate mineral inderite Mg(H4B3O7)(OH) · 5H2O--a vibrational spectroscopic study.

Science.gov (United States)

Frost, Ray L; López, Andrés; Xi, Yunfei; Lima, Rosa Malena Fernandes; Scholz, Ricardo; Granja, Amanda

2013-12-01

We have undertaken a study of the mineral inderite Mg(H4B3O7)(OH) · 5H2O a hydrated hydroxy borate mineral of magnesium using scanning electron microscopy, thermogravimetry and vibrational spectroscopic techniques. The structure consists of [Formula: see text] soroborate groups and Mg(OH)2(H2O)4 octahedra interconnected into discrete molecules by the sharing of two OH groups. Thermogravimetry shows a mass loss of 47.2% at 137.5 °C, proving the mineral is thermally unstable. Raman bands at 954, 1047 and 1116 cm(-1) are assigned to the trigonal symmetric stretching mode. The two bands at 880 and 916 cm(-1) are attributed to the symmetric stretching mode of the tetrahedral boron. Both the Raman and infrared spectra of inderite show complexity. Raman bands are observed at 3052, 3233, 3330, 3392 attributed to water stretching vibrations and 3459 cm(-1) with sharper bands at 3459, 3530 and 3562 cm(-1) assigned to OH stretching vibrations. Vibrational spectroscopy is used to assess the molecular structure of inderite. Copyright © 2013 Elsevier B.V. All rights reserved.

Effect of the CO2/SiH4 Ratio in the p-μc-SiO:H Emitter Layer on the Performance of Crystalline Silicon Heterojunction Solar Cells

OpenAIRE

Sritharathikhun, Jaran; Krajangsang, Taweewat; Moollakorn, Apichan; Inthisang, Sorapong; Limmanee, Amornrat; Hongsingtong, Aswin; Boriraksantikul, Nattaphong; Taratiwat, Tianchai; Akarapanjavit, Nirod; Sriprapha, Kobsak

2014-01-01

This paper reports the preparation of wide gap p-type hydrogenated microcrystalline silicon oxide (p-μc-SiO:H) films using a 40 MHz very high frequency plasma enhanced chemical vapor deposition technique. The reported work focused on the effects of the CO2/SiH4 ratio on the properties of p-μc-SiO:H films and the effectiveness of the films as an emitter layer of crystalline silicon heterojunction (c-Si-HJ) solar cells. A p-μc-SiO:H film with a wide optical band gap (E04), 2.1 eV, can be obtain...

Surface passivation by Al2O3 and a-SiNx: H films deposited on wet-chemically conditioned Si surfaces

NARCIS (Netherlands)

Bordihn, S.; Mertens, V.; Engelhart, P.; Kersten, K.; Mandoc, M.M.; Müller, J.W.; Kessels, W.M.M.

2012-01-01

The surface passivation of p- and n-type silicon by different chemically grown SiO2 films (prepared by HNO3, H2SO4/H2O2 and HCl/H2O2 treatments) was investigated after PECVD of a-SiNx:H and ALD of Al2O3 capping films. The wet chemically grown SiO2 films were compared to thermally grown SiO2 and the

C and Si delta doping in Ge by CH{sub 3}SiH{sub 3} using reduced pressure chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Yamamoto, Yuji, E-mail: yamamoto@ihp-microelectronics.com [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Ueno, Naofumi; Sakuraba, Masao [Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1, Katahira, Aoba-Ku, Sendai 980-8577 (Japan); Murota, Junichi [Micro System Integration Center, Tohoku University, 519-1176, Aramaki aza Aoba, Aoba-ku, Sendai 980-0845 (Japan); Mai, Andreas [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Tillack, Bernd [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Technische Universität Berlin, HFT4, Einsteinufer 25, 10587 Berlin (Germany)

2016-03-01

C and Si delta doping in Ge are investigated using a reduced pressure chemical vapor deposition system to establish atomic-order controlled processes. CH{sub 3}SiH{sub 3} is exposed at 250 °C to 500 °C to a Ge on Si (100) substrate using H{sub 2} or N{sub 2} carrier gas followed by a Ge cap layer deposition. At 350 °C, C and Si are uniformly adsorbed on the Ge surface and the incorporated C and Si form steep delta profiles below detection limit of SIMS measurement. By using N{sub 2} as carrier gas, the incorporated C and Si doses in Ge are saturated at one mono-layer below 350 °C. At this temperature range, the incorporated C and Si doses are nearly the same, indicating CH{sub 3}SiH{sub 3} is adsorbed on the Ge surface without decomposing the C−Si bond. On the other hand, by using H{sub 2} as carrier gas, lower incorporated C is observed in comparison to Si. CH{sub 3}SiH{sub 3} injected with H{sub 2} carrier gas is adsorbed on Ge without decomposing the C−Si bond and the adsorbed C is reduced by dissociation of the C−Si bond during temperature ramp up to 550 °C. The adsorbed C is maintained on the Ge surface in N{sub 2} at 550 °C. - Highlights: • C and Si delta doping in Ge is investigated using RPCVD system by CH{sub 3}SiH{sub 3} exposure. • Atomically flat C and Si delta layers are fabricated at 350 °C. • Incorporated C and Si doses are saturated at one mono-layer below 350 °C. • CH{sub 3}SiH{sub 3} adsorption occurred without decomposing C−Si bond. • Adsorbed C is desorbed due to dissociation by hydrogen during postannealing at 550 °C.

Hydrogen generation due to water splitting on Si - terminated 4H-Sic(0001) surfaces

Science.gov (United States)

Li, Qingfang; Li, Qiqi; Yang, Cuihong; Rao, Weifeng

2018-02-01

The chemical reactions of hydrogen gas generation via water splitting on Si-terminated 4H-SiC surfaces with or without C/Si vacancies were studied by using first-principles. We studied the reaction mechanisms of hydrogen generation on the 4H-SiC(0001) surface. Our calculations demonstrate that there are major rearrangements in surface when H2O approaches the SiC(0001) surface. The first H splitting from water can occur with ground-state electronic structures. The second H splitting involves an energy barrier of 0.65 eV. However, the energy barrier for two H atoms desorbing from the Si-face and forming H2 gas is 3.04 eV. In addition, it is found that C and Si vacancies can form easier in SiC(0001)surfaces than in SiC bulk and nanoribbons. The C/Si vacancies introduced can enhance photocatalytic activities. It is easier to split OH on SiC(0001) surface with vacancies compared to the case of clean SiC surface. H2 can form on the 4H-SiC(0001) surface with C and Si vacancies if the energy barriers of 1.02 and 2.28 eV are surmounted, respectively. Therefore, SiC(0001) surface with C vacancy has potential applications in photocatalytic water-splitting.

Monte Carlo Simulation of Electron Transport in 4H- and 6H-SiC

International Nuclear Information System (INIS)

Sun, C. C.; You, A. H.; Wong, E. K.

2010-01-01

The Monte Carlo (MC) simulation of electron transport properties at high electric field region in 4H- and 6H-SiC are presented. This MC model includes two non-parabolic conduction bands. Based on the material parameters, the electron scattering rates included polar optical phonon scattering, optical phonon scattering and acoustic phonon scattering are evaluated. The electron drift velocity, energy and free flight time are simulated as a function of applied electric field at an impurity concentration of 1x10 18 cm 3 in room temperature. The simulated drift velocity with electric field dependencies is in a good agreement with experimental results found in literature. The saturation velocities for both polytypes are close, but the scattering rates are much more pronounced for 6H-SiC. Our simulation model clearly shows complete electron transport properties in 4H- and 6H-SiC.

Influence of Ce-H bonding on the physical properties of the hydrides CeCoSiH1.0 and CeCoGeH1.0

International Nuclear Information System (INIS)

Chevalier, B; Matar, S F; Menetrier, M; Marcos, J Sanchez; Fernandez, J Rodriguez

2006-01-01

The hydrides CeCoSiH 1.0 and CeCoGeH 1.0 which crystallize like the parent antiferromagnetic compounds CeCoSi and CeCoGe in the tetragonal CeFeSi-type structure, have been investigated by specific heat and thermoelectric power measurements and 1 H nuclear magnetic resonance (NMR). CeCoSiH 1.0 is an intermediate valence compound whereas CeCoGeH 1.0 can be considered as a nearly trivalent cerium compound. This behaviour is corroborated by the occurrence of a slight broadening of the 1 H NMR signal in the sequence CeCoSiH 1.0 → CeCoGeH 1.0 . The band structure calculations performed on these hydrides reveal the existence of strong bonding Ce-H interaction, found to be larger in CeCoSiH 1.0 than in CeCoGeH 1.0

Valence and conduction band offsets at low-k a-SiO{sub x}C{sub y}:H/a-SiC{sub x}N{sub y}:H interfaces

Energy Technology Data Exchange (ETDEWEB)

King, Sean W., E-mail: sean.king@intel.com; Brockman, Justin; French, Marc; Jaehnig, Milt; Kuhn, Markus [Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States); French, Benjamin [Ocotillo Materials Laboratory, Intel Corporation, Chandler, Arizona 85248 (United States)

2014-09-21

In order to understand the fundamental electrical leakage and reliability failure mechanisms in nano-electronic low-k dielectric/metal interconnect structures, we have utilized x-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy to determine the valence and conduction band offsets present at interfaces between non-porous and porous low-k a-SiO{sub x}C{sub y}:H interlayer dielectrics and a-SiC{sub x}N{sub y}:H metal capping layers. The valence band offset for such interfaces was determined to be 2.7±0.2 eV and weakly dependent on the a-SiOC:H porosity. The corresponding conduction band offset was determined to be 2.1±0.2 eV. The large band offsets indicate that intra metal layer leakage is likely dominated by defects and trap states in the a-SiOC:H and a-SiCN:H dielectrics.

Electrically active defects in n-type 4H- and 6H-SiC

Energy Technology Data Exchange (ETDEWEB)

Doyle, J.P. [Royal Inst. of Tech., Stockholm (Sweden). Dept. of Solid State Electronics]|[IBM Research Div., T.J. Watson Research Center, Yorktown Heights, NY (United States); Aboelfotoh, M.O. [Royal Inst. of Tech., Stockholm (Sweden). Dept. of Solid State Electronics]|[North Carolina State Univ., Dept. of Materials Science and Engineering, Raleigh, NC (United States); Svensson, B.G. [Royal Inst. of Tech., Stockholm (Sweden). Dept. of Solid State Electronics

1998-06-01

We have found that in 6H-SiC, irradiation induced defects can become mobile at temperatures as low as 200 C. Through isochronal and isothermal annealing a level at 0.51 eV below the conduction band (with a capture cross-section of 2 x 10{sup -14} cm{sup 2}), appears to disassociate through a first order process with an activation energy of 1.45 eV+/-0.1 eV. In 4H-SiC, we have observed two irradiation induced defects assigned the positions 0.62 eV and 0.68 eV below E{sub c} (with capture cross-sections of 4 x 10{sup -14} cm{sup 2} and 5 x 10{sup -15} cm{sup 2}, respectively) which are found to be unstable at room temperature with time. SIMS analysis indicates that in both 6H- and 4H-SiC the defect levels are not due to the incorporation of the transition metals Ti, V, or Cr. Additionally, in both polytypes of SiC that were examined, the defects are found to display acceptor-like behavior as no evidence of a Poole-Frenkel shift was observed during DLTS measurements. (orig.) 10 refs.

β-FeSi2 films prepared on 6H-SiC substrates by magnetron sputtering

Science.gov (United States)

Hong, Li; Hongbin, Pu; Chunlei, Zheng; Zhiming, Chen

2015-06-01

β-FeSi2 thin films have been successfully prepared by magnetron sputtering and post rapid thermal annealing method on 6H-SiC (0001) substrates using a FeSi2 target and a Si target. X-ray diffraction (XRD) and Raman spectroscopy are applied to analyze the formation of β-FeSi2 films. XRD spectra reveal that the amorphous FeSi2 films are transformed to β-FeSi2 phase as the annealing temperature is increased from 500 to 900 °C for 5 min and the optimal annealing temperature is 900 °C. The formation of β-FeSi2 is also confirmed by Raman spectroscopy. Scanning electron microscope (SEM) observations indicate that the film is flat, relatively compact and the interface between β-FeSi2 and 6H-SiC is clear. Atomic force microscope (AFM) measurements demonstrate that the surface roughness confirmed by the root mean square (RMS) of the β-FeSi2 film is 0.87 nm. Near-infrared spectrophotometer observation shows that the absorption coefficient is of the order of 105 cm-1 and the optical band-gap of the β-FeSi2 film is 0.88 eV. The β-FeSi2 film with high crystal quality is fabricated by co-sputtering a FeSi2 target and a Si target for 60 min and annealing at 900 °C for 5 min. Project supported by the National Natural Science Foundation of China (No. 51177134) and the Natural Science Basic Research Plan in Shaanxi Province of China (No. 2015JM6286).

Offset linear scaling for H-mode confinement

International Nuclear Information System (INIS)

Miura, Yukitoshi; Tamai, Hiroshi; Suzuki, Norio; Mori, Masahiro; Matsuda, Toshiaki; Maeda, Hikosuke; Takizuka, Tomonori; Itoh, Sanae; Itoh, Kimitaka.

1992-01-01

An offset linear scaling for the H-mode confinement time is examined based on single parameter scans on the JFT-2M experiment. Regression study is done for various devices with open divertor configuration such as JET, DIII-D, JFT-2M. The scaling law of the thermal energy is given in the MKSA unit as W th =0.0046R 1.9 I P 1.1 B T 0.91 √A+2.9x10 -8 I P 1.0 R 0.87 P√AP, where R is the major radius, I P is the plasma current, B T is the toroidal magnetic field, A is the average mass number of plasma and neutral beam particles, and P is the heating power. This fitting has a similar root mean square error (RMSE) compared to the power law scaling. The result is also compared with the H-mode in other configurations. The W th of closed divertor H-mode on ASDEX shows a little better values than that of open divertor H-mode. (author)

H0 candidates from the decays Σ-p and Λpπ-, produced in heavy ion collisions Si beam on Pb target

International Nuclear Information System (INIS)

Longacre, R.S.

1997-01-01

There is considerable interest in searching for strange quark matter (strangelets). The lowest strangelet state is thought to be a six quark dibaryon singlet spin zero state called the H 0 predicted by R.L. Jaffe. The authors present H 0 candidate events, where H 0 (2210) is observed through the weak decay modes Σ - p and Λpπ - , produced in central heavy ion collisions with 14.6 x A Gev/c Si beam on Pb target. The lifetime is consistent with ∼4 cm cr in both channels approximately 1/3 of an H 0 (2210) which decays into Σ - p is produced per central Si Pb collision. The branching ratio between Λpπ - and Σ - p is around 11% ± 3%

Comparative study on stress in AlGaN/GaN HEMT structures grown on 6H-SiC, Si and on composite substrates of the 6H-SiC/poly-SiC and Si/poly-SiC

International Nuclear Information System (INIS)

Guziewicz, M; Kaminska, E; Piotrowska, A; Golaszewska, K; Domagala, J Z; Poisson, M-A; Lahreche, H; Langer, R; Bove, P

2008-01-01

The stresses in GaN-based HEMT structures grown on both single crystal 6H SiC(0001) and Si(111) have been compared to these in the HEMT structures grown on new composite substrates engendered as a thin monocrystalline film attached to polycrystalline 3C-SiC substrate. By using HRXRD technique and wafer curvature method we show that stress of monocrystalline layer in composite substrates of the type mono-Si/poly-SiC is lower than 100 MPa and residual stress of epitaxial GaN buffer grown on the composite substrate does not exceed 0.31 GPa, but in the cases of single crystal SiC or Si substrates the GaN buffer stress is compressive in the range of -0.5 to -0.75 GPa. The total stress of the HEMT structure calculated from strains is consistent with the averaged stress of the multilayers stack measured by wafer curvature method. The averaged stress of HEMT structure grown on single crystals is higher than those in structures grown on composites substrates

On the origin of red and blue shifts of X-H and C-H stretching vibrations in formic acid (formate ion) and proton donor complexes.

Science.gov (United States)

Tâme Parreira, Renato Luis; Galembeck, Sérgio Emanuel; Hobza, Pavel

2007-01-08

Complexes between formic acid or formate anion and various proton donors (HF, H(2)O, NH(3), and CH(4)) are studied by the MP2 and B3LYP methods with the 6-311++G(3df,3pd) basis set. Formation of a complex is characterized by electron-density transfer from electron donor to ligands. This transfer is much larger with the formate anion, for which it exceeds 0.1 e. Electron-density transfer from electron lone pairs of the electron donor is directed into sigma* antibonding orbitals of X--H bonds of the electron acceptor and leads to elongation of the bond and a red shift of the X--H stretching frequency (standard H-bonding). However, pronounced electron-density transfer from electron lone pairs of the electron donor also leads to reorganization of the electron density in the electron donor, which results in changes in geometry and vibrational frequency. These changes are largest for the C--H bonds of formic acid and formate anion, which do not participate in H-bonding. The resulting blue shift of this stretching frequency is substantial and amounts to almost 35 and 170 cm(-1), respectively.

Amorphous SiC/c-ZnO-Based Quasi-Lamb Mode Sensor for Liquid Environments

Directory of Open Access Journals (Sweden)

Cinzia Caliendo

2017-05-01

Full Text Available The propagation of the quasi-Lamb modes along a-SiC/ZnO thin composite plates was modeled and analysed with the aim to design a sensor able to detect the changes in parameters of a liquid environment, such as added mass and viscosity changes. The modes propagation was modeled by numerically solving the system of coupled electro-mechanical field equations in three media. The mode shape, the power flow, the phase velocity, and the electroacoustic coupling efficiency (K2 of the modes were calculated, specifically addressing the design of enhanced-coupling, microwave frequency sensors for applications in probing the solid/liquid interface. Three modes were identified that have predominant longitudinal polarization, high phase velocity, and quite good K2: the fundamental quasi symmetric mode (qS0 and two higher order quasi-longitudinal modes (qL1 and qL2 with a dominantly longitudinal displacement component in one plate side. The velocity and attenuation of these modes were calculated for different liquid viscosities and added mass, and the gravimetric and viscosity sensitivities of both the phase velocity and attenuation were theoretically calculated. The present study highlights the feasibility of the a-SiC/ZnO acoustic waveguides for the development of high-frequency, integrated-circuit compatible electroacoustic devices suitable for working in a liquid environment.

A computational study on the adsorption configurations and reactions of SiHx(x = 1-4) on clean and H-covered Si(100) surfaces

Science.gov (United States)

Le, Thong N.-M.; Raghunath, P.; Huynh, Lam K.; Lin, M. C.

2016-11-01

Possible adsorption configurations of H and SiHx (x = 1 - 4) on clean and H-covered Si(100) surfaces are determined by using spin-polarized DFT calculations. The results show that, on the clean surface, the gas-phase hydrogen atom and SiH3 radicals effectively adsorb on the top sites, while SiH and SiH2 prefer the bridge sites of the first layer. Another possibility for SiH is to reside on the hollow sites with a triple-bond configuration. For a partially H-coverd Si(100) surface, the mechanism is similar but with higher adsorption energies in most cases. This suggests that the surface species become more stable in the presence of surface hydrogens. The minimum energy paths for the adsorption/migration and reactions of H/SiHx species on the surfaces are explored using the climbing image-nudged elastic band method. The competitive surface processes for Si thin-film formation from SiHx precursors are also predicted. The study reveals that the migration of hydrogen adatom is unimportant with respect to leaving open surface sites because of its high barriers (>29.0 kcal/mol). Alternatively, the abstraction of hydrogen adatoms by H/SiHx radicals is more favorable. Moreover, the removal of hydrogen atoms from adsorbed SiHx, an essential step for forming Si layers, is dominated by abstraction rather than the decomposition processes.

Design of electro-absorption modulator with tapered-mode coupler on the GeSi layer

International Nuclear Information System (INIS)

Li, Ym; Cheng, Bw

2013-01-01

A tapered-mode coupler integrated GeSi electro-absorption (EA) modulator is investigated theoretically. To improve the parameter insensitivity and modulation efficiency of the GeSi EA modulator based on evanescent coupling, a tapered coupler on the GeSi layer is introduced in our design. The two coupling mechanisms in our suggested structure are compared. Both the beam propagation method (BPM) calculation and coupling mode theory show almost 100% power transfer from the bottom rib waveguide to the GeSi layer. After a series of designs of the tapered coupler, we get a modulator with the advantages of both evanescent-coupling modulators (Feng et al 2011 Opt. Express 19 7062–7, Feng et al 2012 Opt. Express 20 22224–32, Liu et al 2008 Nature Photon. 2 433–7, Liu et al 2007 Opt. Express 15 623–8) and butt-coupling modulators (Lim et al 2011 Opt. Express 19 5040–6), that are ease of fabrication, low coupling loss, performance stability and high modulation efficiency. (paper)

Beta limits in H-modes and VH-modes in JET

Energy Technology Data Exchange (ETDEWEB)

Smeulders, P; Hender, T C; Huysmans, G; Marcus, F; Ali-Arshad, S; Alper, B; Balet, B; Bures, M; Deliyanakis, N; Esch, H de; Fshpool, G; Jarvis, O N; Jones, T T.C.; Ketner, W; Koenig, R; Lawson, K; Lomas, P; O` Brien, D; Sadler, G; Stok, D; Stubberfield, P; Thomas, P; Thomen, K; Wesson, J [Commission of the European Communities, Abingdon (United Kingdom). JET Joint Undertaking; Nave, M F [Universidade Tecnica, Lisbon (Portugal). Inst. Superior Tecnico

1994-07-01

In Hot-ion H- and VH-modes, the highest achieved beta was about 10% below the Troyon value in the best case of discharge 26087. The operational space of the high beta discharges obtained before March 1992 has been explored as function of the parameters H{sub ITER89P}, {beta}{sub n}, q{sub 95}, I{sub p}. Also, a limiting envelope on the fusion reactivity as a function of the average plasma pressure and beta has been observed with R{sub DD} related to {beta}{sub {phi}}{sup 2}.B{sub {phi}}{sup 4}. MHD stability analysis shows that the JET VH modes at the edge are in the second region for ballooning mode stability. The dependence of ballooning stability and the n=1 external kink on the edge current density is analyzed. (authors). 6 figs., 6 refs.

On the intramolecular origin of the blue shift of A-H stretching frequencies: triatomic hydrides HAX.

Science.gov (United States)

Karpfen, Alfred; Kryachko, Eugene S

2009-04-30

A series of intermolecular complexes formed between the triatomic hydrides HAX and various interaction partners are investigated computationally aiming (1) to demonstrate that either an appearance or nonappearance of a blue shift of the A-H stretching frequency is directly related to the sign of the intramolecular coupling that exists between the two degrees of freedom, the A-H and A-X bond lengths, and (2) to offer the following conjecture: the theoretical protonation of a triatomic neutral molecule HAX at the site X is a simple and rather efficient probe of a red or blue shift that the stretching frequency nu(A-H) undergoes upon complex formation regardless of whether this bond is directly involved in hydrogen bonding or not. In other words, to predict whether this A-H bond is capable to display a blue or red shift of nu(A-H), it suffices to compare the equilibrium structures and vibrational spectra of a given molecule with its protonated counterpart. The two above goals are achieved invoking a series of 11 triatomic molecules: HNO, HSN, HPO, and HPS characterized by a negative intramolecular coupling; HON and HNS as intermediate cases; and HOF, HOCl, HCN, HNC, and HCP with a positive intramolecular coupling. For these purposes, the latter molecules are investigated at the MP2/6-311++G(2p,2d) level in the neutral and protonated HAXH(+) forms as well as their complexes with H(2)O and with the fluoromethanes H(3)CF, H(2)CF(2), and HCF(3).

Characteristics of edge localized mode in JFT-2M H-mode

International Nuclear Information System (INIS)

Matsumoto, Hiroshi; Funahashi, Akimasa; Goldston, R.J.

1989-03-01

Characteristics of edge localized mode (ELM/ERP) during H-mode plasma of JFT-2M were investigated. It was found that ELM/ERP is mainly a density fluctuation phenomena in the edge, and electron temperature in the edge except just near the separatrix is not very much perturbed. Several experimental conditions to controll ELM/ERP are, plasma density, plasma ion species, heating power, and plasma current ramping. ELM/ERPs found in low density deuterium discharge are suppressed by raising the density. ELM/ERPs are pronounced in hydrogen plasma compared with deuterium plasma. ELM/ERPs seen in hydrogen plasma or in near marginal H-mode conditions are suppressed by increasing the heating power. ELM/ERPs are found to be suppressed by plasma current ramp down, whereas they are enhanced by current ramp up. MHD aspect of ELM/ERP was investigated. No clear MHD features of ELM/ERP were found. However, reversal of mode rotation seen imediately after ELM/ERP suggests the temporal return to L-mode during the ELM/ERP event. (author)

Influence of gamma-ray irradiation on 6H-SiC MOSFETs

International Nuclear Information System (INIS)

Ohshima, Takeshi; Yoshikawa, Masahito; Itoh, Hisayoshi; Nashiyama, Isamu; Okada, Sohei

1998-01-01

Enhancement-type n-channel MOSFETs were fabricated on 6H-SiC epitaxial films using pyrogenic or dry oxidation process. Oxide-trapped charges and interface traps produced in 6H-Sic MOSFETs by gamma-ray irradiation are evaluated from changes in the subthreshold-current curve. The net numbers of radiation-induced-oxide-trapped charges and interface traps depend on the oxidation process. The 6H-SiC MOSFETs exhibit higher radiation resistance than Si MOSFETs. (author)

Electrical instability of a-Si:H/SiN thin film transistors : a study at room temperature and low voltage stress

NARCIS (Netherlands)

Merticaru, A.R.

2004-01-01

The thesis shows the results of four years of research into the electrical stability of a-Si:H/SiN TFTs. Various methods of investigation of a-Si:H/SiN TFTs have been carried out in this thesis towards understanding the causes of degradation that shortens the transistor lifetime and narrows the

Enhanced absorption in Au nanoparticles/a-Si:H/c-Si heterojunction solar cells exploiting Au surface plasmon resonance

Energy Technology Data Exchange (ETDEWEB)

Losurdo, Maria; Giangregorio, Maria M.; Bianco, Giuseppe V.; Sacchetti, Alberto; Capezzuto, Pio; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy)

2009-10-15

Au nanoparticles (NPs)/(n-type)a-Si:H/(p-type)c-Si heterojunctions have been deposited combining plasma-enhanced chemical-vapour deposition (PECVD) with Au sputtering. We demonstrate that a density of {proportional_to}1.3 x 10{sup 11} cm{sup -2} of Au nanoparticles with an approximately 20 nm diameter deposited onto (n-type)a-Si:H/(p-type)c-Si heterojunctions enhance performance exploiting the improved absorption of light by the surface plasmon resonance of Au NPs. In particular, Au NPs/(n-type)a-Si:H/(p-type)c-Si show an enhancement of 20% in the short-circuit current, J{sub SC}, 25% in the power output, P{sub max} and 3% in the fill factor, FF, compared to heterojunctions without Au NPs. Structures have been characterized by spectroscopic ellipsometry, atomic force microscopy and current-voltage (I-V) measurements to correlate the plasmon resonance-induced enhanced absorption of light with photovoltaic performance. (author)

SIMULTANEOUS OBSERVATIONS OF SiO AND H{sub 2}O MASERS TOWARD KNOWN STELLAR H{sub 2}O MASER SOURCES

Energy Technology Data Exchange (ETDEWEB)

Kim, Jaeheon [Yonsei University Observatory, Seongsan-ro 262, Seodaemun, Seoul 120-749 (Korea, Republic of); Cho, Se-Hyung [Korean VLBI Network Yonsei Radio Astronomy Observatory, Yonsei University, Seongsan-ro 262, Seodaemun, Seoul 120-749 (Korea, Republic of); Kim, Sang Joon, E-mail: jhkim@kasi.re.kr, E-mail: cho@kasi.re.kr, E-mail: sjkim1@khu.ac.kr [Department of Astronomy and Space Science, Kyung Hee University, Seocheon-Dong, Giheung-Gu, Yongin, Gyeonggi-Do 446-701 (Korea, Republic of)

2013-01-01

We present the results of simultaneous observations of SiO v = 1, 2, {sup 29}SiO v = 0, J = 1-0, and H{sub 2}O 6{sub 16}-5{sub 23} maser lines toward 152 known stellar H{sub 2}O maser sources using the Yonsei 21 m radio telescope of the Korean VLBI Network from 2009 June to 2011 January. Both SiO and H{sub 2}O masers were detected from 62 sources with a detection rate of 40.8%. The SiO-only maser emission without H{sub 2}O maser detection was detected from 27 sources, while the H{sub 2}O-only maser without SiO maser detection was detected from 22 sources. Therefore, the overall SiO maser emission was detected from 89 sources, resulting in a detection rate of 58.6%. We have identified 70 new detections of the SiO maser emission. For both H{sub 2}O and SiO maser detected sources, the peak and integrated antenna temperatures of SiO masers are stronger than those of H{sub 2}O masers in both Mira variables and OH/IR stars and the relative intensity ratios of H{sub 2}O to SiO masers in OH/IR stars are larger than those in Mira variables. In addition, distributions of 152 observed sources were investigated in the IRAS two-color diagram.

The dimers of glyoxal and acrolein with H 2O and HF: Negative intramolecular coupling and blue-shifted C-H stretch

Science.gov (United States)

Karpfen, Alfred; Kryachko, Eugene S.

2010-04-01

The structures and the vibrational spectra of the hydrogen-bonded complexes: glyoxal-H 2O, glyoxal-HF, acrolein-H 2O, and acrolein-HF, are investigated within the MP2/aug-cc-pVTZ computational approach. It is demonstrated that the calculated blue shifts of the C-H stretching frequencies in the glyoxal-H 2O complexes are only indirectly pertinent to hydrogen bonding to the C-H group. The comparison with the glyoxal-HF and the acrolein-HF complexes reveals that these blue shifts are a direct consequence of a negative intramolecular coupling between vicinal C dbnd O and C-H bonds in the aldehyde groups of isolated glyoxal and acrolein molecules. To support this interpretation, the halogen-bonded complexes glyoxal-BrF and acrolein-BrF are discussed.

New features of L-H transition in limiter H-modes of JIPP T-IIU

International Nuclear Information System (INIS)

Toi, K.; Morita, S.; Kawahata, K.

1992-09-01

In limiter H-modes of JIPP T-IIU, a new type of L-H transition preceded by an ELM is observed. The preceding ELM (pre-ELM) appears just prior to the L-H transition. This type of transition is usually observed in H-modes of JIPP T-IIU. The L-H transition without the pre-ELM is triggered only in the case when a sufficiently large rapid current ramp down is emploied. In H-modes with constant q(a)∼3.5-4.5, coherent magnetic oscillations with m=3/n=1 destabilized during L-phase are further enhanced at the pre-ELM, and suppressed suddenly at the transition. This mode is situated in the region of the transport barrier. Propagation frequency of the m=3/n=1 mode, which may be affected by plasma mass rotation, rises appreciably (by ∼ 10 %) during H-phase with frequent ELMs, but remains unchanged for at least 200 μs after the transition. Behaviours of the m=3/n=1 and m=2/n=1 modes are well explained by quasi-linear resistive tearing mode analysis for modelled toroidal current density profiles slightly detached from the limiter. These experimental results suggest that the transition is controlled by the change of a magnetic field structure relating to the modification of a toroidal current density profile near the edge. The possibility for the development of edge radial electric field as a consequence of the transition is discussed. (author)

ELM Dynamics in TCV H-modes

Science.gov (United States)

Degeling, A. W.; Martin, Y. R.; Lister, J. B.; Llobet, X.; Bak, P. E.

2003-06-01

TCV (Tokamak à Configuration Variable, R = 0.88 m, a limited and diverted plasmas, with the primary aim of investigating the effects of plasma shape and current profile on tokamak physics and performance. L-mode to H-mode transitions are regularly obtained in TCV over a wide range of configurations. Under most conditions, the H-mode is ELM-free and terminates in a high density disruption. The conditions required for a transition to an ELMy H-mode were investigated in detail, and a reliable gateway in parameter space for the transition was identified. Once established, the ELMy H-mode is robust to changes in plasma current, elongation, divertor geometry and plasma density over ranges that are much wider than the size of the gateway in these parameters. There exists marked irregularity in the time interval between consecutive ELMs. Transient signatures in the time-series revealing the existence of an underlying chaotic dynamical system are repeatedly observed in a sizable group of discharges [1]. The properties of these signatures (called unstable periodic orbits, or UPOs) are found to vary systematically with parameters such as the plasma current, density and inner plasma — wall gap. A link has also been established between the dynamics of ELMs and sawteeth in TCV: under certain conditions a clear preference is observed in the phase between ELMs and sawtooth crashes, and the ratio of the ELM frequency (felm) to sawtooth frequency (fst) is found to prefer simple rational values (e.g. 1/1, 2/1 or 1/2). An attempt to control the ELM dynamics was made by applying a perturbation signal to the radial field coils used for vertical stabilisation. Phase synchronisation was found with the external perturbation, and felm was found to track limited scans in the driver frequency about the unperturbed value, albeit with intermittent losses in phase lock.

Optimisation of electronic interface properties of a-Si:H/c-Si hetero-junction solar cells by wet-chemical surface pre-treatment

Energy Technology Data Exchange (ETDEWEB)

Angermann, H. [Hahn-Meitner-Institut, Abt. Siliziumphotovoltaik, Kekulestrasse 5, D-12489 Berlin (Germany)], E-mail: angermann@hmi.de; Korte, L.; Rappich, J.; Conrad, E.; Sieber, I.; Schmidt, M. [Hahn-Meitner-Institut, Abt. Siliziumphotovoltaik, Kekulestrasse 5, D-12489 Berlin (Germany); Huebener, K.; Hauschild, J. [Freie Universitaet Berlin, FB Physik, Arnimallee 14, 14195 Berlin (Germany)

2008-08-30

The relation between structural imperfections at structured silicon surfaces, energetic distribution of interface state densities, recombination loss at a-Si:H/c-Si interfaces and solar cell characteristics have been intensively investigated using non-destructive, surface sensitive techniques, surface photovoltage (SPV) and photoluminescence (PL) measurements, atomic force microscopy (AFM) and electron microscopy (SEM). Sequences of wet-chemical oxidation and etching steps were optimised with respect to the etching behaviour of Si(111) pyramids. Special wet-chemical smoothing and oxide removal procedures for structured substrates were developed, in order to reduce the preparation-induced surface micro-roughness and density of electronically active defects. H-termination and passivation by wet-chemical oxides were used to inhibit surface contamination and native oxidation during the technological process. We achieved significantly lower micro-roughness, densities of surface states D{sub it}(E) and recombination loss at a-Si:H/c-Si interfaces on wafers with randomly distributed pyramids, compared to conventional pre-treatments. For amorphous-crystalline hetero-junction solar cells (ZnO/a-Si:H/c-Si/BSF/Al), the c-Si surface becomes part of the a-Si:H/c-Si interface, whose recombination activity determines cell performance. With textured substrates, the smoothening procedure results in a significant increase of short circuit current, fill factor and efficiency.

Optimisation of electronic interface properties of a-Si:H/c-Si hetero-junction solar cells by wet-chemical surface pre-treatment

International Nuclear Information System (INIS)

Angermann, H.; Korte, L.; Rappich, J.; Conrad, E.; Sieber, I.; Schmidt, M.; Huebener, K.; Hauschild, J.

2008-01-01

The relation between structural imperfections at structured silicon surfaces, energetic distribution of interface state densities, recombination loss at a-Si:H/c-Si interfaces and solar cell characteristics have been intensively investigated using non-destructive, surface sensitive techniques, surface photovoltage (SPV) and photoluminescence (PL) measurements, atomic force microscopy (AFM) and electron microscopy (SEM). Sequences of wet-chemical oxidation and etching steps were optimised with respect to the etching behaviour of Si(111) pyramids. Special wet-chemical smoothing and oxide removal procedures for structured substrates were developed, in order to reduce the preparation-induced surface micro-roughness and density of electronically active defects. H-termination and passivation by wet-chemical oxides were used to inhibit surface contamination and native oxidation during the technological process. We achieved significantly lower micro-roughness, densities of surface states D it (E) and recombination loss at a-Si:H/c-Si interfaces on wafers with randomly distributed pyramids, compared to conventional pre-treatments. For amorphous-crystalline hetero-junction solar cells (ZnO/a-Si:H/c-Si/BSF/Al), the c-Si surface becomes part of the a-Si:H/c-Si interface, whose recombination activity determines cell performance. With textured substrates, the smoothening procedure results in a significant increase of short circuit current, fill factor and efficiency

Design and Investigation of SST/nc-Si:H/M (M = Ag, Au, Ni and M/nc-Si:H/M Multifunctional Devices

Directory of Open Access Journals (Sweden)

A. F. Qasrawi

2013-01-01

Full Text Available Hydrogenated nanocrystalline Silicon thin films prepared by the very high frequency chemical vapor deposition technique (VHF-CVD on stainless steel (SST substrates are used to design Schottky point contact barriers for the purpose of solar energy conversion and passive electronic component applications. In this process, the contact performance between SST and M (M = Ag, Au, and Ni and between Ag, Au, and Ni electrodes was characterized by means of current-voltage, capacitance-voltage, and light intensity dependence of short circuit ( current and open circuit voltage ( of the contacts. Particularly, the devices ideality factors, barrier heights were evaluated by the Schottky method and compared to the Cheung's. Best Schottky device performance with lowest ideality factor suitable for electronic applications was observed in the SST/nc-Si:H/Ag structure. This device reflects a of 229 mV with an of 1.6 mA/cm2 under an illumination intensity of ~40 klux. On the other hand, the highest being 9.0 mA/cm2 and the of 53.1 mV were observed for Ni/nc-Si:H/Au structure. As these voltages represent the maximum biasing voltage for some of the designed devices, the SST/nc-Si:H/M and M/nc-Si:H/M can be regarded as multifunctional self-energy that provided electronic devices suitable for active or passive applications.

Effects of antimony (Sb) on electron trapping near SiO{sub 2}/4H-SiC interfaces

Energy Technology Data Exchange (ETDEWEB)

Mooney, P. M.; Jiang, Zenan; Basile, A. F. [Physics Department, Simon Fraser University, Burnaby, British Columbia V5A 1S6 (Canada); Zheng, Yongju; Dhar, Sarit [Physics Department, Auburn University, Auburn, Alabama 36849 (United States)

2016-07-21

To investigate the mechanism by which Sb at the SiO{sub 2}/SiC interface improves the channel mobility of 4H-SiC MOSFETs, 1 MHz capacitance measurements and constant capacitance deep level transient spectroscopy (CCDLTS) measurements were performed on Sb-implanted 4H-SiC MOS capacitors. The measurements reveal a significant concentration of Sb donors near the SiO{sub 2}/SiC interface. Two Sb donor related CCDLTS peaks corresponding to shallow energy levels in SiC were observed close to the SiO{sub 2}/SiC interface. Furthermore, CCDLTS measurements show that the same type of near-interface traps found in conventional dry oxide or NO-annealed capacitors are present in the Sb implanted samples. These are O1 traps, suggested to be carbon dimers substituted for O dimers in SiO{sub 2}, and O2 traps, suggested to be interstitial Si in SiO{sub 2}. However, electron trapping is reduced by a factor of ∼2 in Sb-implanted samples compared with samples with no Sb, primarily at energy levels within 0.2 eV of the SiC conduction band edge. This trap passivation effect is relatively small compared with the Sb-induced counter-doping effect on the MOSFET channel surface, which results in improved channel transport.

a-Si:H/c-Si heterojunction front- and back contacts for silicon solar cells with p-type base

Energy Technology Data Exchange (ETDEWEB)

Rostan, Philipp Johannes

2010-07-01

This thesis reports on low temperature amorphous silicon back and front contacts for high-efficiency crystalline silicon solar cells with a p-type base. The back contact uses a sequence of intrinsic amorphous (i-a-Si:H) and boron doped microcrystalline (p-{mu}c-Si:H) silicon layers fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) and a magnetron sputtered ZnO:Al layer. The back contact is finished by evaporating Al onto the ZnO:Al and altogether prepared at a maximum temperature of 220 C. Analysis of the electronic transport of mobile charge carriers at the back contact shows that the two high-efficiency requirements low back contact series resistance and high quality c-Si surface passivation are in strong contradiction to each other, thus difficult to achieve at the same time. The preparation of resistance- and effective lifetime samples allows one to investigate both requirements independently. Analysis of the majority charge carrier transport on complete Al/ZnO:Al/a-Si:H/c-Si back contact structures derives the resistive properties. Measurements of the effective minority carrier lifetime on a-Si:H coated wafers determines the back contact surface passivation quality. Both high-efficiency solar cell requirements together are analyzed in complete photovoltaic devices where the back contact series resistance mainly affects the fill factor and the back contact passivation quality mainly affects the open circuit voltage. The best cell equipped with a diffused emitter with random texture and a full-area a-Si:H/c-Si back contact has an independently confirmed efficiency {eta} = 21.0 % with an open circuit voltage V{sub oc} = 681 mV and a fill factor FF = 78.7 % on an area of 1 cm{sup 2}. An alternative concept that uses a simplified a-Si:H layer sequence combined with Al-point contacts yields a confirmed efficiency {eta} = 19.3 % with an open circuit voltage V{sub oc} = 655 mV and a fill factor FF = 79.5 % on an area of 2 cm{sup 2}. Analysis of the

Low-timing-jitter, stretched-pulse passively mode-locked fiber laser with tunable repetition rate and high operation stability

International Nuclear Information System (INIS)

Liu, Yuanshan; Zhang, Jian-Guo; Chen, Guofu; Zhao, Wei; Bai, Jing

2010-01-01

We design a low-timing-jitter, repetition-rate-tunable, stretched-pulse passively mode-locked fiber laser by using a nonlinear amplifying loop mirror (NALM), a semiconductor saturable absorber mirror (SESAM), and a tunable optical delay line in the laser configuration. Low-timing-jitter optical pulses are stably produced when a SESAM and a 0.16 m dispersion compensation fiber are employed in the laser cavity. By inserting a tunable optical delay line between NALM and SESAM, the variable repetition-rate operation of a self-starting, passively mode-locked fiber laser is successfully demonstrated over a range from 49.65 to 50.47 MHz. The experimental results show that the newly designed fiber laser can maintain the mode locking at the pumping power of 160 mW to stably generate periodic optical pulses with width less than 170 fs and timing jitter lower than 75 fs in the 1.55 µm wavelength region, when the fundamental repetition rate of the laser is continuously tuned between 49.65 and 50.47 MHz. Moreover, this fiber laser has a feature of turn-key operation with high repeatability of its fundamental repetition rate in practice

Synthesis and fundamental properties of stable Ph(3)SnSiH(3) and Ph(3)SnGeH(3) hydrides: model compounds for the design of Si-Ge-Sn photonic alloys.

Science.gov (United States)

Tice, Jesse B; Chizmeshya, Andrew V G; Groy, Thomas L; Kouvetakis, John

2009-07-06

The compounds Ph(3)SnSiH(3) and Ph(3)SnGeH(3) (Ph = C(6)H(5)) have been synthesized as colorless solids containing Sn-MH(3) (M = Si, Ge) moieties that are stable in air despite the presence of multiple and highly reactive Si-H and Ge-H bonds. These molecules are of interest since they represent potential model compounds for the design of new classes of IR semiconductors in the Si-Ge-Sn system. Their unexpected stability and high solubility also makes them a safe, convenient, and potentially useful delivery source of -SiH(3) and -GeH(3) ligands in molecular synthesis. The structure and composition of both compounds has been determined by chemical analysis and a range of spectroscopic methods including multinuclear NMR. Single crystal X-ray structures were determined and indicated that both compounds condense in a Z = 2 triclinic (P1) space group with lattice parameters (a = 9.7754(4) A, b = 9.8008(4) A, c = 10.4093(5) A, alpha = 73.35(10)(o), beta = 65.39(10)(o), gamma = 73.18(10)(o)) for Ph(3)SnSiH(3) and (a = 9.7927(2) A, b = 9.8005(2) A, c = 10.4224(2) A, alpha = 74.01(3)(o), beta = 65.48(3)(o), gamma = 73.43(3)(o)) for Ph(3)SnGeH(3). First principles density functional theory simulations are used to corroborate the molecular structures of Ph(3)SnSiH(3) and Ph(3)SnGeH(3), gain valuable insight into the relative stability of the two compounds, and provide correlations between the Si-Sn and Ge-Sn bonds in the molecules and those in tetrahedral Si-Ge-Sn solids.

Modelling on c-Si/a-Si:H wire solar cells: some key parameters to optimize the photovoltaic performance

Directory of Open Access Journals (Sweden)

Alvarez J.

2012-07-01

Full Text Available Solar cells based on silicon nano- or micro-wires have attracted much attention as a promising path for low cost photovoltaic technology. The key point of this structure is the decoupling of the light absorption from the carriers collection. In order to predict and optimize the performance potential of p- (or n- doped c-Si/ n-(or p- doped a-Si:H nanowire-based solar cells, we have used the Silvaco-Atlas software to model a single-wire device. In particular, we have noticed a drastic decrease of the open-circuit voltage (Voc when increasing the doping density of the silicon core beyond an optimum value. We present here a detailed study of the parameters that can alter the Voc of c-Si(p/a-Si:H (n wires according to the doping density in c-Si. A comparison with simulation results obtained on planar c-Si/a-Si:H heterojunctions shows that the drop in Voc, linked to an increase of the dark current in both structures, is more pronounced for radial junctions due to geometric criteria. These numerical modelling results have lead to a better understanding of transport phenomena within the wire.

Compression behavior of Fe-Si-H alloys

Science.gov (United States)

Tagawa, S.; Ohta, K.; Hirose, K.; Ohishi, Y.

2015-12-01

Although the light elements in the Earth's core are still enigmatic, hydrogen has recently been receiving much attention. Planetary formation theory suggested that a large amount of water, much more than is in the oceans, could have been brought to the Earth during its accretion. Hydrogen is a strong siderophile element and could be incorporated into the core as a consequence of a reaction between water and molten iron in a magma ocean [Okuchi, 1997 Science]. Nevertheless, the effect of hydrogen on the property of iron is not well known so far. Here, we have experimentally examined the compression behavior of hcp Fe0.88Si0.12Hx (6.5 wt.% Si) at two different hydrogen concentrations (x = 0.7 and 0.9). Fe0.88Si0.12 foil was loaded into a diamond-anvil cell, and then liquid hydrogen was introduced to a sample chamber below 20 K. Hydrogenation occurred upon thermal annealing below 1500 K at 25-62 GPa, and hcp Fe0.88Si0.12Hx was obtained as a single phase. Unlike the Fe-H alloy, hydrogen did not fully occupy the octahedral sites even under hydrogen-saturated conditions. Two compression curves, one from 25 to 136 GPa, and the other from 62 to 128 GPa, were obtained at room temperature. While the effect of hydrogen on the compressibility of iron has been controversial in earlier experimental studies [Hirao et al., 2004 GRL; Pépin et al., 2014 PRL], our data indicate that the compressibility of Fe0.88Si0.12Hx alloy does not change with changing hydrogen content from x = 0 to 0.9. Such compression behavior observed is consistent with the recent ab initio calculations for hcp Fe-H alloys by Caracas[2015 GRL]. The extrapolation of present data to the outer core pressure and temperature range, assuming thermal expansivity is the same as that for iron and there is no density difference between solid and liquid, shows that the density of Fe0.88Si0.12H0.3 matches the PREM in the whole outer core within 1%.

In situ investigations on the formation and decomposition of KSiH{sub 3} and CsSiH{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Auer, Henry; Kohlmann, Holger [Department of Inorganic Chemistry, Leipzig University (Germany)

2017-08-03

The system KSi-KSiH{sub 3} stores 4.3 wt % of hydrogen and shows a very good reversibility at mild conditions of 0.1 MPa hydrogen pressure and 414 K.[] We followed the reaction pathways of the hydrogenation reactions of KSi and its higher homologue CsSi by in situ methods in order to check for possible intermediate hydrides. In situ diffraction at temperatures up to 500 K and gas pressures up to 5.0 MPa hydrogen gas for X-ray and deuterium gas for neutron reveal that both KSi and CsSi react in one step to the hydrides KSiH{sub 3} and CsSiH{sub 3} and the respective deuterides. Neither do the Zintl phases dissolve hydrogen (deuterium), nor do the hydrides (deuterides) show any signs for non-stoichiometry, i.e. all phases involved in the formation are line phases. Heating to temperatures above 500 K shows that at 5.0 MPa hydrogen pressure only the reaction 2CsSi + 3H{sub 2} = 2CsSiH{sub 3} is reversible. Under these conditions, KSiH{sub 3} decomposes to a clathrate and potassium hydride according to 46KSiH{sub 3} = K{sub 8}Si{sub 46} + 38KH + 50H{sub 2}. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Efficient outdoor performance of esthetic bifacial a-Si:H semi-transparent PV modules

International Nuclear Information System (INIS)

Myong, Seung Yeop; Jeon, Sang Won

2016-01-01

Highlights: • 1.43 m"2 a-Si:H semi-transparent PV modules with emotionally inoffensive and esthetically pleasing colors are developed. • Seasonal outdoor performance of the developed colorful PV modules is measured and simulated. • The bifacial TBC a-Si:H semi-transparent PV module performs at a superior annual electrical energy output. • An impressive performance ratio of 124.5% is achieved by surpassing a simulated prediction considerably. - Abstract: We developed bifacial transparent back contact (TBC) hydrogenated amorphous silicon (a-Si:H) semi-transparent glass-to-glass photovoltaic (PV) modules with emotionally inoffensive and esthetically pleasing colors have been developed by combining the transparent back contact and color of the back glass. Due to the high series resistance of the transparent back contact, the bifacial TBC a-Si:H semi-transparent PV modules had a lower rated power after light soaking than the monofacial opaque (metal) back contact (OBC) a-Si:H semi-transparent PV modules fabricated using the additional laser scribing patterns. However, the TBC a-Si:H semi-transparent PV module produced a higher annual electrical energy output than the OBC a-Si:H semi-transparent PV module thanks to bifacial power generation during the outdoor field test. In particular, the performance ratio of the TBC a-Si:H semi-transparent PV module measured at the optimal tilt angle of 30° surpassed its simulated prediction by a drastically high value of 124.5%. At a higher tilt angle of 85°, bifacial power generation produced a higher deviation between the measured and simulated annual performance of the TBC a-Si:H semi-transparent PV module. Since the reflected albedo has a tendency to increase toward higher tilt angles, bifacial power generation can compensate for the loss of lower direct plane-of-array irradiation at a higher tilt angle. Therefore, the TBC a-Si:H semi-transparent PV module is suitable for the vertically mounted building integrated

Overview of H-mode studies in DIII-D

International Nuclear Information System (INIS)

Groebner, R.J.; Baker, D.R,; Allen, S.L.

1994-01-01

A major portion of the DIII-D program includes studies of the L-H transition, of the VH-mode, of particle transport and control and of the power-handling capability of a diverter. Significant progress has been made in all of these areas and the purpose of this paper is to summarize the major results obtained during the last two years. An increased understanding of the origin of improved confinement in H-mode and in VH-mode discharges has been obtained, good impurity control has been achieved in several operating scenarios, studies of helium transport provide encouraging results from the point of view of reactor design, an actively pumped diverter chamber has controlled the density in H-mode discharges and a radiative diverter is a promising technique for controlling the heat flux from the main plasma

On-site SiH4 generator using hydrogen plasma generated in slit-type narrow gap

Science.gov (United States)

Takei, Norihisa; Shinoda, Fumiya; Kakiuchi, Hiroaki; Yasutake, Kiyoshi; Ohmi, Hiromasa

2018-06-01

We have been developing an on-site silane (SiH4) generator based on use of the chemical etching reaction between solid silicon (Si) and the high-density H atoms that are generated in high-pressure H2 plasma. In this study, we have developed a slit-type plasma source for high-efficiency SiH4 generation. High-density H2 plasma was generated in a narrow slit-type discharge gap using a 2.45 GHz microwave power supply. The plasma’s optical emission intensity distribution along the slit was measured and the resulting distribution was reflected by both the electric power distribution and the hydrogen gas flow. Because the Si etching rate strongly affects the SiH4 generation rate, the Si etching behavior was investigated with respect to variations in the experimental parameters. The weight etch rate increased monotonically with increasing input microwave power. However, the weight etch rate decreased with increasing H2 pressure and an increasing plasma gap. This reduction in the etch rate appears to be related to shrinkage of the plasma generation area because increased input power is required to maintain a constant plasma area with increasing H2 pressure and the increasing plasma gap. Additionally, the weight etch rate also increases with increasing H2 flow rate. The SiH4 generation rate of the slit-type plasma source was also evaluated using gas-phase Fourier transform infrared absorption spectroscopy and the material utilization efficiencies of both Si and the H2 gas for SiH4 gas formation were discussed. The main etch product was determined to be SiH4 and the developed plasma source achieved a SiH4 generation rate of 10 sccm (standard cubic centimeters per minute) at an input power of 900 W. In addition, the Si utilization efficiency exceeded 60%.

Radicals and ions controlling by adjusting the antenna-substrate distance in a-Si:H deposition using a planar ICP for c-Si surface passivation

Energy Technology Data Exchange (ETDEWEB)

Zhou, H.P., E-mail: haipzhou@uestc.edu.cn [School of Energy Science and Engineering, University of Electronic Science and Technology of China, 2006 Xiyuan Ave., West High-Tech Zone, Chengdu, Sichuan, 611731 (China); Plasma Sources and Application Center, NIE, and Institute of Advanced Studies, Nanyang Technological University, 637616 (Singapore); Xu, S., E-mail: shuyan.xu@nie.edu.sg [Plasma Sources and Application Center, NIE, and Institute of Advanced Studies, Nanyang Technological University, 637616 (Singapore); Xu, M. [Key Laboratory of Information Materials of Sichuan Province & School of Electrical and Information Engineering, Southwest University for Nationalities, Chengdu, 610041 (China); Xu, L.X.; Wei, D.Y. [Plasma Sources and Application Center, NIE, and Institute of Advanced Studies, Nanyang Technological University, 637616 (Singapore); Xiang, Y. [School of Energy Science and Engineering, University of Electronic Science and Technology of China, 2006 Xiyuan Ave., West High-Tech Zone, Chengdu, Sichuan, 611731 (China); Xiao, S.Q. [Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi, 214122 (China)

2017-02-28

Highlights: • A planar ICP was used to grow a-Si:H films for c-Si surface passivation. • The direct- and remote-plasma was compared for high-quality c-Si surface passivation. • The remote ICP with controlled plasma species and ion bombardments is preferable for the surface passivation of c-Si. - Abstract: Being a key issue in the research and fabrication of silicon heterojunction (SHJ) solar cells, crystalline silicon (c-Si) surface passivation is theoretically and technologically intricate due to its complicate dependence on plasma characteristics, material properties, and plasma-material interactions. Here amorphous silicon (a-Si:H) grown by a planar inductively coupled plasma (ICP) reactor working under different antenna-substrate distances of d was used for the surface passivation of low-resistivity p-type c-Si. It is found that the microstructures (i.e., the crystallinity, Si-H bonding configuration etc.) and passivation function on c-Si of the deposited a-Si:H were profoundly influenced by the parameter of d, which primarily determines the types of growing precursors of SiH{sub n}/H contributing to the film growth and the interaction between the plasma and growing surface. c-Si surface passivation is analyzed in terms of the d-dependent a-Si:H properties and plasma characteristics. The controlling of radical types and ion bombardment on the growing surface through adjusting parameter d is emphasized.

Pellet fuelling and ELMy H-mode physics at JET

International Nuclear Information System (INIS)

Horton, L.D.

2001-01-01

As the reference operating regime for ITER, investigations of the ELMy H-mode have received high priority in the JET experimental programme. Recent experiments have concentrated in particular on operation simultaneously at high density and high confinement using high field side (HFS) pellet launch. The enhanced fuelling efficiency of HFS pellet fuelling is found to scale favourably to a large machine such as JET. The achievable density of ELMy H-mode plasmas in JET has been significantly increased using HFS fuelling although at the expense of confinement degradation back to L-mode levels. Initial experiments using control of the pellet injection frequency have shown that density and confinement can simultaneously be increased close to the values necessary for ITER. The boundaries of the available ELMy H-mode operational space have also been extensively explored. The power necessary to maintain the high confinement normally associated with ELMy H-mode operation is found to be substantially higher than the H-mode threshold power. The compatibility of ELMy H-modes with divertor operation acceptable for a fusion device has been studied. Narrow energy scrape-off widths are measured which place stringent limits on divertor power handling. Deuterium and tritium codeposition profiles are measured to be strongly in/out asymmetric. Successful modelling of these profiles requires the inclusion of the (measured) scrape-off layer flows and of the production in the divertor of hydrocarbon molecules with sticking coefficients below unity. Helium exhaust and compression are found to be within the limits sufficient for a reactor. (author)

ELM Dynamics in TCV H-modes

International Nuclear Information System (INIS)

Degeling, A.W.; Martin, Y.R.; Lister, J.B.; Llobet, X.; Bak, P.E.

2003-01-01

TCV (Tokamak a Configuration Variable, R = 0.88 m, a < 0.25 m, BT < 1.54 T) is a highly elongated tokamak, capable of producing limited and diverted plasmas, with the primary aim of investigating the effects of plasma shape and current profile on tokamak physics and performance. L-mode to H-mode transitions are regularly obtained in TCV over a wide range of configurations. Under most conditions, the H-mode is ELM-free and terminates in a high density disruption. The conditions required for a transition to an ELMy H-mode were investigated in detail, and a reliable gateway in parameter space for the transition was identified. Once established, the ELMy H-mode is robust to changes in plasma current, elongation, divertor geometry and plasma density over ranges that are much wider than the size of the gateway in these parameters. There exists marked irregularity in the time interval between consecutive ELMs. Transient signatures in the time-series revealing the existence of an underlying chaotic dynamical system are repeatedly observed in a sizable group of discharges [1]. The properties of these signatures (called unstable periodic orbits, or UPOs) are found to vary systematically with parameters such as the plasma current, density and inner plasma -- wall gap. A link has also been established between the dynamics of ELMs and sawteeth in TCV: under certain conditions a clear preference is observed in the phase between ELMs and sawtooth crashes, and the ratio of the ELM frequency (felm) to sawtooth frequency (fst) is found to prefer simple rational values (e.g. 1/1, 2/1 or 1/2). An attempt to control the ELM dynamics was made by applying a perturbation signal to the radial field coils used for vertical stabilisation. Phase synchronisation was found with the external perturbation, and felm was found to track limited scans in the driver frequency about the unperturbed value, albeit with intermittent losses in phase lock

Development of scientific and technological basis for the fabrication of thin film solar cells on the basis of a-Si:H and {mu}c-Si:H using the 'hot-wire' deposition technique. Final report; Entwicklung wissenschaftlicher und technischer Grundlagen fuer die Herstellung von Duennschichtsolarzellen auf der Basis des a-Si:H und {mu}c-Si:H mit der 'Hot-Wire'-Depositionstechnik. Abschlussbericht

Energy Technology Data Exchange (ETDEWEB)

Schroeder, B.

2002-01-22

Two new deposition systems were realized enabling the entire and respectively, large area deposition of a-Si:H based solar cells using the so called 'hot-wire' (HW) CVD. The deposition conditions for appropriate n- and p-doped a-Si:H and {mu}c-Si:H layers have been developed. For the first time in the world a-Si:H based pin solar cells were entirely deposited by the HWCVD method. A maximum initial conversion efficiency of {eta}{sub initial}=8.9% was obtained. After the development of a suitable p/n-tunnel/recombination junction pin-pin tandem structures with a-Si:H absorbers could be entirely fabricated by the HWCVD for the first time in the world, too. A conversion efficiency of {eta}=7% was measured for the tandem cell, after some structural degradation took place. In general, the stability of the HWCVD solar cells is not satisfactory, what could be attributed to a structural instability of the HWCVD-p-layers. For the first time we have deposited nip solar cells on stainless steel substrates entirely by HWCVD ({eta}{sub initial}>6%). The incorporation of {mu}c-Si:H absorber layers by HWCVD or ECWR-PECVD into pin solar cells was not successfull until now. Large area deposition of a-Si:H films has been performed in a simple vacuum vessel. Under consideration of appropriate filament and gas supply geometry as well as simulation calculations a good electronic quality and a film thickness uniformity of {delta}d={+-}2.5% of the material was obtained. i-layers for small area solar cells on an area of 20 x 20 cm{sup 2} have been deposited which could be completed to solar cells with very uniform conversion efficiencies of {eta}{sub initial} = 6,1{+-}0.2%. This result represents a proof of concept for the large area deposition of a-Si:H based solar cells using the HWCVD. Also for the first time the HWCVD was used for the deposition of emitter layers on c-Si-wafers to realize hetero solar cells. Hetero solar cells with amorphous, microcrystalline and epitaxial n

Thermal stability of polyoxometalate compound of Keggin K8[2-SiW11O39]∙nH2O supported with SiO2

Directory of Open Access Journals (Sweden)

Yunita Sari M A

2017-06-01

Full Text Available Synthesis through sol-gel method and characterization of polyoxometalate compound of K8[b2-SiW11O39]∙nH2O supported with SiO2 have been done. The functional groups of polyoxometalate compound  was characterized by FT-IR spectrophotometer for the fungtional groups and the degree’s of crystalinity  using XRD. The acidity of K8[b2-SiW11O39]∙nH2O/SiO2 was determined qualitative analysis using ammonia and pyridine adsorption and the quantitative analysis using potentiometric titration method. The results of FT-IR spectrum of K8[b2-SiW11O39]∙nH2O appeared at  wavenumber 987.55 cm-1 (W=O, 864.11 cm-1 (W-Oe-W, 756.1 cm-1 (W-Oc-W, 3425.58 cm-1 (O-H, respectively and spectrum of  K8[b2-SiW11O39]SiO2 appeared at wavenumber  956.69 cm-1 (W=O, 864.11 cm-1 (W-Oe-W, 3448.72 cm-1 (O-H, respectively. The diffraction of XRD pattern of K8[b2-SiW11O39]∙nH2O and K8[b2-SiW11O39]∙nH2O/SiO2 compounds show high crystalinity. The acidic properties showed K8[b2-SiW11O39]∙nH2O/SiO2 more acidic compared to K8[b2-The SiW11O39]∙nH2O. The qualitative analysis showed pyridine compound adsorbed more of polyoxometalate compound of K8[b2-SiW11O39]∙nH2O/SiO2. Analysis of stability showed that the K8[b2-SiW11O39]∙nH2O/SiO2 at temperature 500°C has structural changes compare to 200-400oC which was indicated from vibration at wavenumber 800-1000 cm-1. Keywords : K8[b2-SiW11O39]∙nH2O, polyoxometalate, SiO2.

Guidelines for Stretch Flanging Advanced High Strength Steels

International Nuclear Information System (INIS)

Sriram, S.; Chintamani, J.

2005-01-01

Advanced High Strength Steels (AHSS) are currently being considered for use in closure and structural panels in the automotive industry because of their high potential for affordable weight reduction and improved performance. AHSS such as dual phase steels are currently being used in some vehicle platforms. From a manufacturing perspective, stretch flanging during stamping is an important deformation mode requiring careful consideration of geometry and the die process. This paper presents some geometric and process guidelines for stretch flanging AHSS. Hole expansion experiments were conducted to determine the failure limit for a sheared edge condition. Effects of punching clearance, prestrain and prior strain path on hole expansion were explored in these experiments. In addition, dynamic explicit FE calculations using LS-DYNA were also conducted for a typical stretch flange by varying some key geometric parameters. The experimental and FEA results were then analyzed to yield process and geometric guidelines to enable successful stretch flanging of AHSS

Simulated physiological stretch increases expression of extracellular matrix proteins in human bladder smooth muscle cells via integrin α4/αv-FAK-ERK1/2 signaling pathway.

Science.gov (United States)

Chen, Shulian; Peng, Chuandu; Wei, Xin; Luo, Deyi; Lin, Yifei; Yang, Tongxin; Jin, Xi; Gong, Lina; Li, Hong; Wang, Kunjie

2017-08-01

To investigate the effect of simulated physiological stretch on the expression of extracellular matrix (ECM) proteins and the role of integrin α4/αv, focal adhesion kinase (FAK), extracellular regulated protein kinases 1/2 (ERK1/2) in the stretch-induced ECM protein expression of human bladder smooth muscle cells (HBSMCs). HBSMCs were seeded onto silicone membrane and subjected to simulated physiological stretch at the range of 5, 10, and 15% elongation. Expression of primary ECM proteins in HBSMCs was analyzed by real-time polymerase chain reaction and Western blot. Specificity of the FAK and ERK1/2 was determined by Western blot with FAK inhibitor and ERK1/2 inhibitor (PD98059). Specificity of integrin α4 and integrin αv was determined with small interfering ribonucleic acid (siRNA) transfection. The expression of collagen I (Col1), collagen III (Col3), and fibronectin (Fn) was increased significantly under the simulated physiological stretch of 10 and 15%. Integrin α4 and αv, FAK, ERK1/2 were activated by 10% simulated physiological stretch compared with the static condition. Pretreatment of ERK1/2 inhibitor, FAK inhibitor, integrin α4 siRNA, or integrin αv siRNA reduced the stretch-induced expression of ECM proteins. And FAK inhibitor decreased the stretch-induced ERK1/2 activity and ECM protein expression. Integrin α4 siRNA or integrin αv siRNA inhibited the stretch-induced activity of FAK. Simulated physiological stretch increases the expression of ECM proteins in HBSMCs, and integrin α4/αv-FAK-ERK1/2 signaling pathway partly modulates the mechano-transducing process.

Multi-Phonon Relaxation of H^- Local Modes in CaF_2

Science.gov (United States)

Davison, C. P.; Happek, U.; Campbell, J. A.; Engholm, J. R.; Schwettman, H. A.

1998-03-01

Local modes play an important role in the relaxation of vibrational modes of small molecules in solids (J.R. Engholm, C.W. Rella, H.A. Schwettman, and U. Happek; Phys. Rev. Lett. 77), 1302 (1996)., but only few attempts have been reported to study the relaxation of these local modes. Here we report on experiments to investigate the non-radiative relaxation of H^- local modes in CaF_2. Using a pump-probe technique, saturation experiments on the H^- local modes, both interstitial and substitutional, were performed at the Stanford Free Electron Laser Center. At low temperature we find a relaxation time T1 of 45 psec for the substitutional H^- local mode, and a more rapid relaxation for the interstitial H^- local modes next to La^3+ and Lu^3+ impurities. Information on the decay channels of the local modes are obtained from the characteristic temperature dependence of the relaxation rates. This work is supported in part by the ONR, Grant No. N00014-94-1024.

Collisional drift waves in the H-mode edge

International Nuclear Information System (INIS)

Sen, S.

1994-01-01

The stability of the collisional drift wave in a sheared slab geometry is found to be severely restricted at the H-mode edge plasma due to the very steep density gradient. However, a radially varying transverse velocity field is found to play the key role in stability. Velocity profiles usually found in the H-mode plasma stabilize drift waves. On the other hand, velocity profiles corresponding to the L-mode render collisional drift waves unstable even though the magnetic shear continues to play its stabilizing role. (author). 24 refs

Cat-CVD-prepared oxygen-rich μc-Si:H for wide-bandgap material

International Nuclear Information System (INIS)

Matsumoto, Yasuhiro; Ortega, Mauricio; Peza, Juan-Manuel; Reyes, Mario-Alfredo; Escobosa, Arturo

2005-01-01

Microcrystalline phase-involved oxygen-rich a-Si:H (hydrogenated amorphous silicon) films have been obtained using catalytic chemical vapor deposition (Cat-CVD) process. Pure SiH 4 (silane), H 2 (hydrogen), and O 2 (oxygen) gases were introduced in the chamber by maintaining a pressure of 0.1 Torr. A tungsten catalyzer was fixed at temperatures of 1750 and 1950 deg. C for film deposition on glass and crystalline silicon substrates at 200 deg. C. As revealed from X-ray diffraction spectra, the microcrystalline phase appears for oxygen-rich a-Si:H samples deposited at a catalyzer temperature of 1950 deg. C. However, this microcrystalline phase tends to disappear for further oxygen incorporation. The oxygen content in the deposited films was corroborated by FTIR analysis revealing Si-O-Si bonds and typical Si-H bonding structures. The optical bandgap of the sample increases from 2.0 to 2.7 eV with oxygen gas flow and oxygen incorporation to the deposited films. In the present thin film deposition conditions, no strong tungsten filament degradation was observed after a number of sample preparations

Keggin type polyoxometalate H4[αSiW12O40].nH2O as intercalant for hydrotalcite

Directory of Open Access Journals (Sweden)

Neza Rahayu Palapa

2017-06-01

Full Text Available The synthesis of hydrotalcite and polyoxometalate H4[αSiW12O40].nH2O with the ratio (2:1, (1:1, (1:2 and (1:3 has been done. The product of intercalation was characterized using FT-IR spectrophotometer, XRD, and TG-DTA. Polyoxometalate H4[αSiW12O40].nH2O intercalated layered double hydroxide was optimised to use as adsorbent Congo red dye. Characterization using FT-IR was not showing the optimal insertion process. The result using XRD characterization was showed successful of polyoxometalate H4[αSiW12O40].nH2O inserted layered double hydroxide with a ratio (1:1 which the basal spacing was expanded from 7,8 Ȧ to 9,81 Ȧ. Furthermore, the thermal analysis was performed using TG-DTA. The result show that the decomposition of polyoxometalate H4[αSiW12O40].nH2O intercalated  hydrotalcite with ratio (1:1 was occured at 80oC to 400oC with a loss of OH in the layer at 150oC to 220oC, and then the decomposition of the compound polyoxometalate H4[αSiW12O40].nH2O at 350oC to 420oC. Keywords: Hydrotalcite, Layered Double Hydroxide, Polyoxometalate, Intercalation

Structural and electronic properties of the transition layer at the SiO2/4H-SiC interface

Directory of Open Access Journals (Sweden)

Wenbo Li

2015-01-01

Full Text Available Using first-principles methods, we generate an amorphous SiO2/4H-SiC interface with a transition layer. Based this interface model, we investigate the structural and electronic properties of the interfacial transition layer. The calculated Si 2p core-level shifts for this interface are comparable to the experimental data, indicating that various SiCxOy species should be present in this interface transition layer. The analysis of the electronic structures reveals that the tetrahedral SiCxOy structures cannot introduce any of the defect states at the interface. Interestingly, our transition layer also includes a C-C=C trimer and SiO5 configurations, which lead to the generation of interface states. The accurate positions of Kohn-Sham energy levels associated with these defects are further calculated within the hybrid functional scheme. The Kohn-Sham energy levels of the carbon trimer and SiO5 configurations are located near the conduction and valence band of bulk 4H-SiC, respectively. The result indicates that the carbon trimer occurred in the transition layer may be a possible origin of near interface traps. These findings provide novel insight into the structural and electronic properties of the realistic SiO2/SiC interface.

Probable mode prediction for H.264 advanced video coding P slices using removable SKIP mode distortion estimation

Science.gov (United States)

You, Jongmin; Jeong, Jechang

2010-02-01

The H.264/AVC (advanced video coding) is used in a wide variety of applications including digital broadcasting and mobile applications, because of its high compression efficiency. The variable block mode scheme in H.264/AVC contributes much to its high compression efficiency but causes a selection problem. In general, rate-distortion optimization (RDO) is the optimal mode selection strategy, but it is computationally intensive. For this reason, the H.264/AVC encoder requires a fast mode selection algorithm for use in applications that require low-power and real-time processing. A probable mode prediction algorithm for the H.264/AVC encoder is proposed. To reduce the computational complexity of RDO, the proposed method selects probable modes among all allowed block modes using removable SKIP mode distortion estimation. Removable SKIP mode distortion is used to estimate whether or not a further divided block mode is appropriate for a macroblock. It is calculated using a no-motion reference block with a few computations. Then the proposed method reduces complexity by performing the RDO process only for probable modes. Experimental results show that the proposed algorithm can reduce encoding time by an average of 55.22% without significant visual quality degradation and increased bit rate.

Properties of hydrogenated amorphous silicon (a-Si:H) deposited using a microwave Ecr plasma; Propiedades del a-Si:H depositado utilizando un plasma de microondas

Energy Technology Data Exchange (ETDEWEB)

Mejia H, J A

1997-12-31

Hydrogenated amorphous silicon (a-Si:H) films have been widely applied to semiconductor devices, such as thin film transistors, solar cells and photosensitive devices. In this work, the first Si-H-Cl alloys (obtained at the National Institute for Nuclear Research of Mexico) were formed by a microwave electron cyclotron resonance (Ecr) plasma CVD method. Gaseous mixtures of silicon tetrachloride (Si Cl{sub 4}), hydrogen and argon were used. The Ecr plasma was generated by microwaves at 2.45 GHz and a magnetic field of 670 G was applied to maintain the discharge after resonance condition (occurring at 875 G). Si and Cl contents were analyzed by Rutherford Backscattering Spectrometry (RBS). It was found that, increasing proportion of Si Cl{sub 4} in the mixture or decreasing pressure, the silicon and chlorine percentages decrease. Optical gaps were obtained by spectrophotometry. Decreasing temperature, optical gap values increase from 1.4 to 1.5 eV. (Author).

Recombination reduction at the c-Si/RCA oxide interface through Ar-H2 plasma treatment

Science.gov (United States)

Landheer, Kees; Bronsveld, Paula C. P.; Poulios, Ioannis; Tichelaar, Frans D.; Kaiser, Monja; Schropp, Ruud E. I.; Rath, Jatin K.

2017-02-01

An Ar-H2 plasma treatment was applied on an ultrathin RCA oxide to create well-passivated silicon wafers with symmetric c-Si/SiOx:H/a-Si:H passivation layer stacks. The effective lifetime of these samples increased from 10 μs to 4 ms after annealing at 200 °C through Ar-H2 plasma treatment of the oxide. The results indicate that the plasma treatment can modify the RCA oxide and this enables atomic hydrogen diffusion at low annealing temperature, leading to a well passivated c-Si/SiOx:H interface. This might provide new possibilities to use wet chemical oxides in c-Si solar cells, for example as tunnel contacts.

Improved H-mode access in connected DND in MAST

International Nuclear Information System (INIS)

Meyer, H; Carolan, P G; Conway, N J; Counsell, G F; Cunningham, G; Field, A R; Kirk, A; McClements, K G; Price, M; Taylor, D

2005-01-01

In the Mega-Amp Spherical Tokamak, MAST, the formation of the edge transport barrier leading to the high-confinement (H-mode) regime is greatly facilitated by operating in a double null diverted (DND) configuration where both X-points are practically on the same flux surface. Ohmic H-modes are presently only obtained in these connected double null diverted (CDND) configurations. The ease of H-mode access is lost if the two flux surfaces passing through the X-points are radially separated by more than one ion Larmor radius (ρ i ∼ 6 mm) at the low-field-side mid-plane. The change of the magnetic configuration from disconnected to CDND is accompanied by a change in the radial electric field of about ΔE ψ ∼ -1 kV m -1 and a reduction of the electron temperature decay length in the high-field-side scrape-off-layer. Other parameters at the plasma edge, in particular those affecting the H-mode access criteria of common L/H transition theories, are not affected by the slight changes to the magnetic configuration. It is believed that the observed change in E ψ , which may result from differences in ion orbit losses, leads to a higher initial E x B flow shear in CDND configurations which could lead to the easier H-mode access

ELM triggering conditions for the integrated modeling of H-mode plasmas

International Nuclear Information System (INIS)

Pankin, A.Y.; Schnack, D.D.; Bateman, G.; Kritz, A.H.; Brennan, D.P.; Snyder, P.B.; Voitsekhovitch, I.; Kruger, S.; Janeschitz, G.; Onjun, T.; Pacher, G.W.; Pacher, H.D.

2005-01-01

Recent advances in the integrated modeling of ELMy H-mode plasmas are presented. A new model for the H-mode pedestal and for the triggering of ELMs predicts the height, width, and shape of the H-mode pedestal and the frequency and width of ELMs. The model for the pedestal and ELMs is used in the ASTRA integrated transport code to follow the time evolution of tokamak discharges from L-mode through the transition from L-mode to H-mode, with the formation of the H-mode pedestal, and, subsequently, to the triggering of ELMs. Turbulence driven by the ion temperature gradient mode, resistive ballooning mode, trapped electron mode, and electron temperature gradient mode contributes to the anomalous thermal transport at the plasma edge in this model. Formation of the pedestal and the L-H transition is the direct result of E(vector) r x B(vector) flow shear suppression of anomalous transport. The periodic ELM crashes are triggered by MHD instabilities. Two mechanisms for triggering ELMs are considered: ELMs are triggered by ballooning modes if the pressure gradient exceeds the ballooning threshold or by peeling modes if the edge current density exceeds the peeling mode threshold. The BALOO, DCON, and ELITE ideal MHD stability codes are used to derive a new parametric expression for the peeling-ballooning threshold. The new dependence for the peeling-ballooning threshold is implemented in the ASTRA transport code. Results of integrated modeling of DIII-D like discharges are presented and compared with experimental observations. The results from the ideal MHD stability codes are compared with results from the resistive MHD stability code NIMROD. (author)

Linking structure and vibrational mode coupling using high-resolution infrared spectroscopy: A comparison of gauche and trans 1-chloro-2-fluoroethane

Science.gov (United States)

Miller, C. Cameron; Stone, Stephen C.; Philips, Laura A.

1995-01-01

The high-resolution infrared spectrum of 1-chloro-2-fluoroethane in a molecular beam was collected over the 2975-2994 cm-1 spectral region. The spectral region of 2975-2981 cm-1 contains a symmetric C-H stretching vibrational band of the gauche conformer containing the 35Cl isotope. The spectral region of 2985-2994 cm-1 contains three vibrational bands of the trans conformer. Two of the three bands are assigned as an antisymmetric C-H stretch of each of the two different chlorine isotopes. The third band is assigned as a symmetric C-H stretch of the 35Cl isotope. The gauche conformer of 1-chloro-2-fluoroethane showed doublet patterns similar to those previously observed in 1,2-difluoroethane. The model for 1,2-difluoroethane is further refined in the present work. These refinements suggest that the coupling dark state in 1,2-difluoroethane is composed of 1 quantum C-H bend, 1 quantum C-C stretch, and 12 quanta of torsion. For 1-chloro-2-fluoroethane the dark state could not be identified due to a small data set. The trans conformer of 1-chloro-2-fluoroethane showed no evidence of mode coupling in the three vibrational bands. Including 2-fluoroethanol in this series of molecules, the extent of vibrational mode coupling did not correlate with the density of states available for coupling. Therefore, density of states alone is insufficient to explain the observed trend. A correlation was observed between the degree of intramolecular interaction and vibrational mode coupling.

Transition to H-mode by energetic electrons

International Nuclear Information System (INIS)

Itoh, Kimitaka; Itoh, Sanae.

1992-07-01

Effect of the electron loss due to the toroidal ripple on an H-mode transition is studied. When energetic electrons exist in tokamaks, e.g., in the case of the current drive by lower hybrid (LH) waves, the edge electric field can show the bifurcation to the more positive value. In this state, both the electron loss and ion loss (such as loss cone loss) are reduced. The criterion for the transition is derived. Comparison with H-mode in JT-60 LH plasma shows a qualitative agreement. (author)

Scaling of the H-mode power threshold for ITER

International Nuclear Information System (INIS)

1998-01-01

Analysis of the latest ITER H-mode threshold database is presented. The power necessary for the transition to H-mode is estimated for ITER, with or without the inclusion of radiation losses from the bulk plasma, in terms of the main engineering variables. The main geometrical variables (aspect ratio ε, elongation κ and average triangularity δ) are also included in the analysis. The H-mode transition is also considered from the point of view of the local edge variables, and the electron temperature at 90% of the poloidal flux is expressed in terms of both local and global variables. (author)

Electric field dependent structural and vibrational properties of the Si(100)-H(2 x 1) surface and its implications for STM induced hydrogen desorption

DEFF Research Database (Denmark)

Stokbro, Kurt

1999-01-01

We report a first principles study of the structure and the vibrational properties of the Si(100)-H(2 x 1) surface in an electric field. The calculated vibrational parameters are used to model the vibrational modes in the presence of the electric field corresponding to a realistic scanning...

H-modes studies in PDX

International Nuclear Information System (INIS)

Fonck, R.J.; Beirsdorfer, P.; Bell, M.

1984-07-01

A regime of enhanced energy confinement during neutral beam heating has been obtained routinely in the PDX tokamak after modifications to form a closed divertor geometry. Plasma density profiles were broad and the electron temperature at the plasma edge reached values of approx. 400 eV in the H-mode phase of a discharge. A comparison of closed divertor discharges with moderate and intense gas puffing indicates that a requirement for obtaining high confinement times is the localization of the plasma fueling source in the divertor throat region. While high confinement was attained at moderate injected powers (P/sub INJ/ less than or equal to 3 MW), confinement was degraded at higher powers due to both increased edge instabilities and, especially, the intense gas puffing needed to prevent disruptions. Initial results with a particle scoop limiter indicate high particle confinement times and energy confinement times approaching those of diverted H-mode plasmas

Energy confinement in Ohmic H-mode in TUMAN-3M

International Nuclear Information System (INIS)

Andrejko, M.V.; Askinazi, L.G.; Golant, V.E.; Kornev, V.A.; Lebedev, S.V.; Levin, L.S.; Tukachinsky, A.S.

1997-01-01

The spontaneous transition from Ohmically heated limiter discharges into the regime with improved confinement termed as ''Ohmic H-mode'' has been investigated in ''TUMAN-3''. The typical signatures of H-mode in tokamaks with powerful auxiliary heating have been observed: sharp drop of D α radiation with simultaneous increase in the electron density and stored energy, suppression of the density fluctuations and establishing the steep gradient near the periphery. In 1994 new vacuum vessel had been installed in TUMAN-3 tokamak. The vessel has the same sizes as old one (R 0 =0.55 m, a 1 =0.24 m). New vessel was designed to reduce mechanical stresses in the walls during B T ramp phase of a shot. Therefore modified device - TUMAN-3M is able to produce higher B T and I p , up to 2 T and 0.2 MA respectively. During first experimental run device was operated in Ohmic Regime. In these experiments the possibility to achieve Ohmic H-mode was studied. The study of the parametric dependencies of the energy confinement time in both OH and Ohmic H-mode was performed. In Ohmic H-mode strong dependencies of τ E on plasma current and on input power and weak dependence on density were found. Energy confinement time in TUMAN-3/TUMAN-3M Ohmic H-mode has revealed good agreement with JET/DIII-D/ASDEX scaling for ELM-free H-mode, resulting in very long τ E at the high plasma current discharges. (author)

Interface Trap Profiles in 4H- and 6H-SiC MOS Capacitors with Nitrogen- and Phosphorus-Doped Gate Oxides

Science.gov (United States)

Jiao, C.; Ahyi, A. C.; Dhar, S.; Morisette, D.; Myers-Ward, R.

2017-04-01

We report results on the interface trap density ( D it) of 4H- and 6H-SiC metal-oxide-semiconductor (MOS) capacitors with different interface chemistries. In addition to pure dry oxidation, we studied interfaces formed by annealing thermal oxides in NO or POCl3. The D it profiles, determined by the C- ψ s method, show that, although the as-oxidized 4H-SiC/SiO2 interface has a much higher D it profile than 6H-SiC/SiO2, after postoxidation annealing (POA), both polytypes maintain comparable D it near the conduction band edge for the gate oxides incorporated with nitrogen or phosphorus. Unlike most conventional C- V- or G- ω-based methods, the C- ψ s method is not limited by the maximum probe frequency, therefore taking into account the "fast traps" detected in previous work on 4H-SiC. The results indicate that such fast traps exist near the band edge of 6H-SiC also. For both polytypes, we show that the total interface trap density ( N it) integrated from the C- ψ s method is several times that obtained from the high-low method. The results suggest that the detected fast traps have a detrimental effect on electron transport in metal-oxide-semiconductor field-effect transistor (MOSFET) channels.

Resonance Raman spectroscopy of 2H-labelled spheroidenes in petroleum ether and in the Rhodobacter sphaeroides reaction centre.

Science.gov (United States)

Kok, P; Köhler, J; Groenen, E J; Gebhard, R; van der Hoef, I; Lugtenburg, J; Farhoosh, R; Frank, H A

1997-03-01

As a step towards the structural analysis of the carotenoid spheroidene in the Rhodobacter sphaeroides reaction centre, we present the resonance Raman spectra of 14-2H, 15-2H, 15'-2H, 14'-2H, 14,15'-2H2 and 15-15'-2H2 spheroidenes in petroleum ether and, except for 14,15'-2H2 spheroidene, in the Rb. sphaeroides R26 reaction center (RC). Analysis of the spectral changes upon isotopic substitution allows a qualitative assignment of most of the vibrational bands to be made. For the all-trans spheroidenes in solution the resonance enhancement of the Raman bands is determined by the participation of carbon carbon stretching modes in the centre of the conjugated chain, the C9 to C15' region. For the RC-bound 15,15'-cis spheroidenes, enhancement is determined by the participation of carbon-carbon stretching modes in the centre of the molecule, the C13 to C13' region. Comparison of the spectra in solution and in the RC reveals evidence for an out-of-plane distortion of the RC-bound spheroidene in the central C14 to C14' region of the carotenoid. The characteristic 1240 cm-1 band in the spectrum of the RC-bound spheroidene has been assigned to a normal mode that contains the coupled C12-C13 and C13'-C12' stretch vibrations.

Atomic insight into tribochemical wear mechanism of silicon at the Si/SiO{sub 2} interface in aqueous environment: Molecular dynamics simulations using ReaxFF reactive force field

Energy Technology Data Exchange (ETDEWEB)

Wen, Jialin; Ma, Tianbao [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Zhang, Weiwei; Psofogiannakis, George; Duin, Adri C.T. van [Department of Mechanical and Nuclear Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Chen, Lei; Qian, Linmao [Tribology Research Institute, Key Laboratory of Advanced Technologies of Materials (Ministry of Education), Southwest Jiaotong University, Chengdu 610031 (China); Hu, Yuanzhong [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Lu, Xinchun, E-mail: xclu@tsinghua.edu.cn [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China)

2016-12-30

Highlights: • New ReaxFF reactive force field was applied to simulate the tribochemical wear process at Si/SiO{sub 2} interface. • Wear of silicon atoms is due to the breaking of Si–O–Si bonds and Si–Si–O–Si bond chains on the Si substrate. • Interfacial bridge bonds play an important role during the tribochemical wear process. • Higher pressures applied to the silica phase can cause more Si atoms to be removed by forming more interfacial bridge bonds. • Water plays an opposing role in the wear process because of its both chemical and mechanical effects. - Abstract: In this work, the atomic mechanism of tribochemical wear of silicon at the Si/SiO{sub 2} interface in aqueous environment was investigated using ReaxFF molecular dynamics (MD) simulations. Two types of Si atom removal pathways were detected in the wear process. The first is caused by the destruction of stretched Si–O–Si bonds on the Si substrate surface and is assisted by the attachment of H atoms on the bridging oxygen atoms of the bonds. The other is caused by the rupture of Si–Si bonds in the stretched Si–Si–O–Si bond chains at the interface. Both pathways effectively remove Si atoms from the silicon surface via interfacial Si–O–Si bridge bonds. Our simulations also demonstrate that higher pressures applied to the silica phase can cause more Si atoms to be removed due to the formation of increased numbers of interfacial Si–O–Si bridge bonds. Besides, water plays a dual role in the wear mechanism, by oxidizing the Si substrate surface as well as by preventing the close contact of the surfaces. This work shows that the removal of Si atoms from the substrate is a result of both chemical reaction and mechanical effects and contributes to the understanding of tribochemical wear behavior in the microelectromechanical systems (MEMS) and Si chemical mechanical polishing (CMP) process.

Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

Energy Technology Data Exchange (ETDEWEB)

Zeng, Xiangbin, E-mail: eexbzeng@mail.hust.edu.cn; Wen, Xixing; Sun, Xiaohu; Liao, Wugang; Wen, Yangyang

2016-04-30

Boron-doped zinc oxide (BZO) films were grown by metal organic chemical vapor deposition. The influence of B{sub 2}H{sub 6} flow rate and substrate temperature on the microstructure, optical, and electrical properties of BZO films was investigated by X-ray diffraction spectrum, scanning electron microscope, optical transmittance spectrum, and Hall measurements. The BZO films with optical transmittance above 85% in the visible and infrared light range, resistivity of 0.9–1.0 × 10{sup −3} Ω cm, mobility of 16.5–25.5 cm{sup 2}/Vs, and carrier concentration of 2.2–2.7 × 10{sup 20} cm{sup −3} were deposited under optimized conditions. The optimum BZO films were applied on the bifacial BZO/p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n{sup +}-type a-Si:H/BZO heterojunction solar cell as both front and back transparent electrodes. Meanwhile, the bifacial heterojunction solar cell with indium tin oxide (ITO) as both front and back transparent electrodes was fabricated. The efficiencies of 17.788% (open-circuit voltage: 0.628 V, short-circuit current density: 41.756 mA/cm{sup 2} and fill factor: 0.678) and 16.443% (open-circuit voltage: 0.590 V, short-circuit current density: 36.515 mA/cm{sup 2} and fill factor: 0.762) were obtained on the a-Si/c-Si heterojunction solar cell with BZO and ITO transparent electrodes, respectively. - Highlights: • Boron-doped zinc oxide films with low resistivity were fabricated. • The boron-doped zinc oxide films have the high transmittance. • B-doped ZnO film was applied in a-Si:H/c-Si solar cell as transparent electrodes. • The a-Si:H/c-Si solar cell with efficiency of 17.788% was obtained.

Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

International Nuclear Information System (INIS)

Zeng, Xiangbin; Wen, Xixing; Sun, Xiaohu; Liao, Wugang; Wen, Yangyang

2016-01-01

Boron-doped zinc oxide (BZO) films were grown by metal organic chemical vapor deposition. The influence of B_2H_6 flow rate and substrate temperature on the microstructure, optical, and electrical properties of BZO films was investigated by X-ray diffraction spectrum, scanning electron microscope, optical transmittance spectrum, and Hall measurements. The BZO films with optical transmittance above 85% in the visible and infrared light range, resistivity of 0.9–1.0 × 10"−"3 Ω cm, mobility of 16.5–25.5 cm"2/Vs, and carrier concentration of 2.2–2.7 × 10"2"0 cm"−"3 were deposited under optimized conditions. The optimum BZO films were applied on the bifacial BZO/p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n"+-type a-Si:H/BZO heterojunction solar cell as both front and back transparent electrodes. Meanwhile, the bifacial heterojunction solar cell with indium tin oxide (ITO) as both front and back transparent electrodes was fabricated. The efficiencies of 17.788% (open-circuit voltage: 0.628 V, short-circuit current density: 41.756 mA/cm"2 and fill factor: 0.678) and 16.443% (open-circuit voltage: 0.590 V, short-circuit current density: 36.515 mA/cm"2 and fill factor: 0.762) were obtained on the a-Si/c-Si heterojunction solar cell with BZO and ITO transparent electrodes, respectively. - Highlights: • Boron-doped zinc oxide films with low resistivity were fabricated. • The boron-doped zinc oxide films have the high transmittance. • B-doped ZnO film was applied in a-Si:H/c-Si solar cell as transparent electrodes. • The a-Si:H/c-Si solar cell with efficiency of 17.788% was obtained.

Bifurcation to Enhanced Performance H-mode on NSTX

Science.gov (United States)

Battaglia, D. J.; Chang, C. S.; Gerhardt, S. P.; Kaye, S. M.; Maingi, R.; Smith, D. R.

2015-11-01

The bifurcation from H-mode (H98 Performance (EP)H-mode (H98 = 1.2 - 2.0) on NSTX is found to occur when the ion thermal (χi) and momentum transport become decoupled from particle transport, such that the ion temperature (Ti) and rotation pedestals increase independent of the density pedestal. The onset of the EPH-mode transition is found to correlate with decreased pedestal collisionality (ν*ped) and an increased broadening of the density fluctuation (dn/n) spectrum in the pedestal as measured with beam emission spectroscopy. The spectrum broadening at decreased ν*ped is consistent with GEM simulations that indicate the toroidal mode number of the most unstable instability increases as ν*ped decreases. The lowest ν*ped, and thus largest spectrum broadening, is achieved with low pedestal density via lithium wall conditioning and when Zeff in the pedestal is significantly reduced via large edge rotation shear from external 3D fields or a large ELM. Kinetic neoclassical transport calculations (XGC0) confirm that Zeff is reduced when edge rotation braking leads to a more negative Er that shifts the impurity density profiles inward relative to the main ion density. These calculations also describe the role kinetic neoclassical and anomalous transport effects play in the decoupling of energy, momentum and particle transport at the bifurcation to EPH-mode. This work was sponsored by the U.S. Department of Energy.

Investigation of Performance Silicon Heterojunction Solar Cells Using a-Si: H or a-SiC: H at Emitter Layer Through AMPS-1D Simulations

Directory of Open Access Journals (Sweden)

Asmaa BENSMAIN

2014-05-01

Full Text Available We offer a numerical simulation tool, AMPS-1D, which allows to model homo- as well as heterojunction devices. AMPS-1D is the short form of automat for simulation of heterostructures. The program solves the one dimensional semiconductor equations in steady-state. Furthermore, a variety of common characterization techniques have been implemented, current- voltage, external quantum efficiency, conduction and valence band. A user-friendly interface allows to easily perform parameter variations, and to visualize and compare your simulations. In this work, The silicon heterojunction cell performances are investigated by detailed described on external quantum efficiency, and light current-voltage characteristics by recognized simulator AMPS-1D (Analysis of Micro- electronics and Photonic Structures. The objective of this work is to study the correlation between the emitter properties of both heterojunction cells a-Si:H/c-Si and a-SiC:H/c-Si (absorption, defect profiles and energy band offsets and the carrier collection.

Growth rate and surface morphology of 4H-SiC crystals grown from Si-Cr-C and Si-Cr-Al-C solutions under various temperature gradient conditions

Science.gov (United States)

Mitani, Takeshi; Komatsu, Naoyoshi; Takahashi, Tetsuo; Kato, Tomohisa; Fujii, Kuniharu; Ujihara, Toru; Matsumoto, Yuji; Kurashige, Kazuhisa; Okumura, Hajime

2014-09-01

The growth rate and surface morphology of 4H-SiC crystals prepared by solution growth with Si1-xCrx and Si1-x-yCrxAly (x=0.4, 0.5 and 0.6; y=0.04) solvents were investigated under various temperature conditions. The growth rate was examined as functions of the temperature difference between the growth surface and C source, the amount of supersaturated C and supersaturation at the growth surface. We found that generation of trench-like surface defects in 4H-SiC crystals was suppressed using Si1-x-yCrxAly solvents even under highly supersaturated conditions where the growth rate exceeded 760 μm/h. Conversely, trench-like defects were observed in crystals grown with Si1-xCrx solvents under all experimental conditions. Statistical observation of the macrostep structure showed that the macrostep height in crystals grown with Si1-x-yCrxAly solvents was maintained at lower levels than that obtained using Si1-xCrx solvents. Addition of Al prevents the macrosteps from developing into large steps, which are responsible for the generation of trench-like surface defects.

Investigations on the structural and optical properties of the swift heavy ion irradiated 6H-SiC

International Nuclear Information System (INIS)

Viswanathan, E.; Katharria, Y.S.; Selvakumar, S.; Arulchakkaravarthi, A.; Kanjilal, D.; Sivaji, K.

2011-01-01

Research highlights: → We have reported the structural and optical properties of SHI irradiated 6H-SiC. → The change in Raman modes evidences the disorder accumulation with respect to ion fluence. → The disorder also causes the modification in the optical properties. → The time resolved photoluminescence reflects multiple lifetimes due to the degenerate defects states. → The study also reveals the presence of partial amorphous region due to SHI irradiation. -- Abstract: Single crystal 6H-SiC wafers have been irradiated with 150 MeV Ag 12+ ions with fluences ranging from 1 x 10 11 to 1 x 10 13 ions/cm 2 at 300 K. The defect accumulation as a function of fluence was studied to determine changes in structural and optical properties. The variation in the fundamental Raman modes of the crystalline 6H-SiC due to irradiation has been correlated with the disorder accumulation. The creation of defect states due to irradiation in the bandgap affects the blue-green photoluminescence emission in the irradiated samples. The UV-Visible absorption studies support the existence of defect states in the bandgap which is observed by the shift in the absorption edge towards the lower energy side with increasing fluence. Time Correlated Single Photon Counting photoluminescence decay results suggest that the existing defect states are radiative, exhibiting three lifetimes when irradiated with a fluence 5 x 10 11 ions/cm 2 . The total number of lifetime components was reduced for a fluence 1 x 10 13 ions/cm 2 as the defect states produced increase the non-radiative defect centres. These results suggest that the accumulation of defects due to irradiation at fluences 5 x 10 11 and 1 x 10 13 ions/cm 2 are degenerate configurations which exhibit multiple lifetimes in photoluminescence studies. It is inferred that the optically active defect states influence the transition rate of charge carriers in this device material.

Investigations on the structural and optical properties of the swift heavy ion irradiated 6H-SiC

Energy Technology Data Exchange (ETDEWEB)

Viswanathan, E. [Materials Science Centre, Department of Nuclear Physics, University of Madras, Guindy Campus, Chennai 600025 (India); Katharria, Y.S. [Laboratoire de Physique des Interactions Ioniques et Moleculaires, Equipe Plasma-Surface, case 241, 13397 Marseille Cedex 20 (France); Selvakumar, S. [Materials Science Centre, Department of Nuclear Physics, University of Madras, Guindy Campus, Chennai 600025 (India); Arulchakkaravarthi, A. [Sinmat Inc., 2153 SE Hawthorne Rd., Gainesville Fl-32641 (United States); Kanjilal, D. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, P.O. Box 10502, New Delhi 110067 (India); Sivaji, K., E-mail: sivaji.krishnan@yahoo.co [Materials Science Centre, Department of Nuclear Physics, University of Madras, Guindy Campus, Chennai 600025 (India)

2011-05-15

Research highlights: {yields} We have reported the structural and optical properties of SHI irradiated 6H-SiC. {yields} The change in Raman modes evidences the disorder accumulation with respect to ion fluence. {yields} The disorder also causes the modification in the optical properties. {yields} The time resolved photoluminescence reflects multiple lifetimes due to the degenerate defects states. {yields} The study also reveals the presence of partial amorphous region due to SHI irradiation. -- Abstract: Single crystal 6H-SiC wafers have been irradiated with 150 MeV Ag{sup 12+} ions with fluences ranging from 1 x 10{sup 11} to 1 x 10{sup 13} ions/cm{sup 2} at 300 K. The defect accumulation as a function of fluence was studied to determine changes in structural and optical properties. The variation in the fundamental Raman modes of the crystalline 6H-SiC due to irradiation has been correlated with the disorder accumulation. The creation of defect states due to irradiation in the bandgap affects the blue-green photoluminescence emission in the irradiated samples. The UV-Visible absorption studies support the existence of defect states in the bandgap which is observed by the shift in the absorption edge towards the lower energy side with increasing fluence. Time Correlated Single Photon Counting photoluminescence decay results suggest that the existing defect states are radiative, exhibiting three lifetimes when irradiated with a fluence 5 x 10{sup 11} ions/cm{sup 2}. The total number of lifetime components was reduced for a fluence 1 x 10{sup 13} ions/cm{sup 2} as the defect states produced increase the non-radiative defect centres. These results suggest that the accumulation of defects due to irradiation at fluences 5 x 10{sup 11} and 1 x 10{sup 13} ions/cm{sup 2} are degenerate configurations which exhibit multiple lifetimes in photoluminescence studies. It is inferred that the optically active defect states influence the transition rate of charge carriers in this

Fabrication of 4H-SiC Schottky barrier diodes with high breakdown voltages

CERN Document Server

Kum, B H; Shin, M W; Park, J D

1999-01-01

This paper discusses the fabrication and the breakdown characteristics of 4H-SiC Schottky barrier diodes (SBDs). Optimal processing conditions for the ohmic contacts were extracted using the transmission-line method (TLM) and were applied to the device fabrication. The Ti/4H-SiC SBDs with Si sub x B sub y passivation showed a maximum reverse breakdown voltage of 268 V with a forward current density as high as 70 mA/cm sup 2 at a forward voltage of 2 V. The breakdown of the Pt. 4H-SiC SBDs without any passivation occurred at near 110 V. It is concluded that the breakdown enhancement in the Ti/4H-SiC SBDs can be attributed to the passivation; otherwise, excess surface charge near the edge of the Schottky contact would lead to electric fields of sufficient magnitude to cause field emission.

Ferromagnetism in proton irradiated 4H-SiC single crystal

Directory of Open Access Journals (Sweden)

Ren-Wei Zhou

2015-04-01

Full Text Available Room-temperature ferromagnetism is observed in proton irradiated 4H-SiC single crystal. An initial increase in proton dose leads to pronounced ferromagnetism, accompanying with obvious increase in vacancy concentration. Further increase in irradiation dose lowers the saturation magnetization with the decrease in total vacancy defects due to the defects recombination. It is found that divacancies are the mainly defects in proton irradiated 4H-SiC and responsible for the observed ferromagnetism.

Reciprocating Probe Measurements of L-H Transition in LHCD H-mode on EAST

DEFF Research Database (Denmark)

Peng, Liu; Guosheng, Xu; Huiqian, Wang

2013-01-01

that the power loss P loss was comparable during the L-H transition, by comparing the adjacent L-mode and H-mode discharge. The Dα emission, Te and ne decreased rapidly in the time scale of about 1 ms, and the radial electric field Er turned positive in this process near the last closed flux surface. Multiple L......-H-L transitions were observed during a single shot when the applied LHW power was marginal to the threshold. The floating potential (Vf) had negative spikes corresponding with the Dα signal, and Er oscillation evolved into several intermittent negative spikes just before the L-H transition. In some shots......, dithering was observed just before the L-H transition....

Evolution of a Native Oxide Layer at the a-Si:H/c-Si Interface and Its Influence on a Silicon Heterojunction Solar Cell.

Science.gov (United States)

Liu, Wenzhu; Meng, Fanying; Zhang, Xiaoyu; Liu, Zhengxin

2015-12-09

The interface microstructure of a silicon heterojunction (SHJ) solar cell was investigated. We found an ultrathin native oxide layer (NOL) with a thickness of several angstroms was formed on the crystalline silicon (c-Si) surface in a very short time (∼30 s) after being etched by HF solution. Although the NOL had a loose structure with defects that are detrimental for surface passivation, it acted as a barrier to restrain the epitaxial growth of hydrogenated amorphous silicon (a-Si:H) during the plasma-enhanced chemical vapor deposition (PECVD). The microstructure change of the NOL during the PECVD deposition of a-Si:H layers with different conditions and under different H2 plasma treatments were systemically investigated in detail. When a brief H2 plasma was applied to treat the a-Si:H layer after the PECVD deposition, interstitial oxygen and small-size SiO2 precipitates were transformed to hydrogenated amorphous silicon suboxide alloy (a-SiO(x):H, x ∼ 1.5). In the meantime, the interface defect density was reduced by about 50%, and the parameters of the SHJ solar cell were improved due to the post H2 plasma treatment.

Damage accumulation and annealing in 6H-SiC irradiated with Si+

International Nuclear Information System (INIS)

Jiang, W.; Weber, W.J.; Thevuthasan, S.; McCready, D.E.

1998-01-01

Damage accumulation and annealing in 6H-silicon carbide (α-SiC) single crystals have been studied in situ using 2.0 MeV He + RBS in a left angle 0001 right angle -axial channeling geometry (RBS/C). The damage was induced by 550 keV Si + ion implantation (30 off normal) at a temperature of -110 C, and the damage recovery was investigated by subsequent isochronal annealing (20 min) over the temperature range from -110 C to 900 C. At ion fluences below 7.5 x 10 13 Si + /cm 2 (0.04 dpa in the damage peak), only point defects appear to be created. Furthermore, the defects on the Si sublattice can be completely recovered by thermal annealing at room temperature (RT), and recovery of defects on the C sublattice is suggested. At higher fluences, amorphization occurs; however, partial damage recovery at RT is still observed, even at a fluence of 6.6 x 10 14 Si + /cm 2 (0.35 dpa in the damage peak) where a buried amorphous layer is produced. At an ion fluence of 6.0 x 10 15 Si + /cm 2 (-90 C), an amorphous layer is created from the surface to a depth of 0.6 μm. Because of recovery processes at the buried crystalline-amorphous interface, the apparent thickness of this amorphous layer decreases slightly (<10%) with increasing temperature over the range from -90 C to 600 C. (orig.)

First-principles study on the effect of SiO{sub 2} layers during oxidation of 4H-SiC

Energy Technology Data Exchange (ETDEWEB)

Ono, Tomoya, E-mail: ono@ccs.tsukuba.ac.jp [Center for Computational Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8577 (Japan); JST-PRESTO, Kawaguchi, Saitama 332-0012 (Japan); Saito, Shoichiro [Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871 (Japan)

2015-02-23

The effect of SiO{sub 2} layers during the thermal oxidation of a 4H-SiC(0001) substrate is examined by performing the first-principles total-energy calculations. Although it is expected that a CO molecule is the most preferable product during the oxidation, CO{sub 2} molecules are mainly emitted from the SiC surface at the initial stage of the oxidation. As the oxidation proceeds, CO{sub 2} emission becomes less favorable and CO molecules are emitted from the interface. We conclude that the interface stress due to the lattice constant mismatch between 4H-SiC(0001) and SiO{sub 2} is responsible for the removal of C during the oxidation, resulting in the characteristic electronic property of the interface fabricated by the thermal oxidation.

High-rate synthesis of microcrystalline silicon films using high-density SiH4/H2 microwave plasma

International Nuclear Information System (INIS)

Jia, Haijun; Saha, Jhantu K.; Ohse, Naoyuki; Shirai, Hajime

2007-01-01

A high electron density (> 10 11 cm -3 ) and low electron temperature (1-2 eV) plasma is produced by using a microwave plasma source utilizing a spoke antenna, and is applied for the high-rate synthesis of high quality microcrystalline silicon (μc-Si) films. A very fast deposition rate of ∼ 65 A/s is achieved at a substrate temperature of 150 deg. C with a high Raman crystallinity and a low defect density of (1-2) x 10 16 cm -3 . Optical emission spectroscopy measurements reveal that emission intensity of SiH and intensity ratio of H α /SiH are good monitors for film deposition rate and film crystallinity, respectively. A high flux of film deposition precursor and atomic hydrogen under a moderate substrate temperature condition is effective for the fast deposition of highly crystallized μc-Si films without creating additional defects as well as for the improvement of film homogeneity

High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes.

Science.gov (United States)

Martinez, Nicholas J D; Derose, Christopher T; Brock, Reinhard W; Starbuck, Andrew L; Pomerene, Andrew T; Lentine, Anthony L; Trotter, Douglas C; Davids, Paul S

2016-08-22

We present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER-12, in the range from -18.3 dBm to -12 dBm received optical power into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.

Enhancement of mode-converted electron Bernstein wave emission during National Spherical Torus Experiment H-mode plasmas

International Nuclear Information System (INIS)

Taylor, G.; Efthimion, P.C.; Jones, B.; Le Blanc, B.P.; Maingi, R.

2002-01-01

A sudden, threefold increase in emission from fundamental electrostatic electron Bernstein waves (EBW) which mode convert and tunnel to the electromagnetic X-mode has been observed during high energy and particle confinement (H-mode) transitions in the National Spherical Torus Experiment (NSTX) plasma [M. Ono, S. Kaye, M. Peng et al., in Proceedings of the 17th IAEA Fusion Energy Conference (IAEA, Vienna, Austria, 1999), Vol. 3, p. 1135]. The mode-converted EBW emission viewed normal to the magnetic field on the plasma midplane increases when the density profile steepens in the vicinity of the mode conversion layer, which is located in the plasma scrape off. The measured conversion efficiency during the H-mode is consistent with the calculated EBW to X-mode conversion efficiency derived using edge density data. Calculations indicate that there may also be a small residual contribution to the measured X-mode electromagnetic radiation from polarization-scrambled, O-mode emission, converted from EBWs

Defect-induced polytype transformations in LPE grown SiC epilayers on (1 1 1) 3C-SiC seeds grown by VLS on 6H-SiC

International Nuclear Information System (INIS)

Marinova, Maya; Zoulis, Georgios; Robert, Teddy; Mercier, Frederic; Mantzari, Alkioni; Galben, Irina; Kim-Hak, Olivier; Lorenzzi, Jean; Juillaguet, Sandrine; Chaussende, Didier; Ferro, Gabriel; Camassel, Jean; Polychroniadis, Efstathios K.

2009-01-01

The results of transmission electron microscopy (TEM) with low-temperature photoluminescence (LTPL) and Raman studies of liquid phase grown epilayers on top of a vapor liquid solid (VLS) grown 3C-SiC buffer layer are compared. While the 6H-SiC substrate was completely covered by the 3C-SiC seed after the first VLS process, degradation occurred during the early stage of the liquid phase epitaxy process. This resulted in polytype instabilities, such that several rhombohedral forms stabilized one after the other. These (21R-SiC, 57R-SiC) eventually led after few microns to a final transition back to 6H-SiC. This interplay of polytypes resulted in a complex optical signature, with specific LTPL and Raman features.

Eliminating electromechanical instability in dielectric elastomers by employing pre-stretch

International Nuclear Information System (INIS)

Jiang, Liang; Jerrams, Stephen; Betts, Anthony; Kennedy, David

2016-01-01

Electromechanical instability (EMI) is one of most common failure modes for dielectric elastomers (DEs). It has been reported that pre-stretching a DE sample can suppress EMI due to strain stiffening taking place for larger strains and a higher elastic modulus are achieved at high stretch ratios when a voltage is applied to the material. In this work, the influence of equi-biaxial stretch on DE secant modulus was studied using VHB 4910 and silicone rubber (SR) composites containing barium titanate (BaTiO 3 , BT) particles and also dopamine coated BT (DP-BT) particles. The investigation of equi-biaxial deformation and EMI failure for VHB 4910 was undertaken by introducing a voltage-stretch function. The results showed that EMI was suppressed by equi-biaxial pre-stretch for all the DEs fabricated and tested. The stiffening properties of the DE materials were also studied with respect to the secant modulus. Furthermore, a voltage-induced strain of above 200% was achieved for the polyacrylate film by applying a pre-stretch ratio of 2.0 without EMI occurring. However, a maximum voltage-induced strain in the polyacrylate film of 78% was obtained by the SR/20 wt% DP-BT composite for a lower applied pre-stretch ratio of 1.6 and again EMI was eliminated. (paper)

Phonon Transport at Crystalline Si/Ge Interfaces: The Role of Interfacial Modes of Vibration

Science.gov (United States)

Gordiz, Kiarash; Henry, Asegun

2016-01-01

We studied the modal contributions to heat conduction at crystalline Si and crystalline Ge interfaces and found that more than 15% of the interface conductance arises from less than 0.1% of the modes in the structure. Using the recently developed interface conductance modal analysis (ICMA) method along with a new complimentary methodology, we mapped the correlations between modes, which revealed that a small group of interfacial modes, which exist between 12–13 THz, exhibit extremely strong correlation with other modes in the system. It is found that these interfacial modes (e.g., modes with large eigen vectors for interfacial atoms) are enabled by the degree of anharmonicity near the interface, which is higher than in the bulk, and therefore allows this small group of modes to couple to all others. The analysis sheds light on the nature of localized vibrations at interfaces and can be enlightening for other investigations of localization. PMID:26979787

Effects of boron addition on the formation of MoSi2 by combustion synthesis mode

International Nuclear Information System (INIS)

Feng Peizhong; Wu Jie; Islam, S.H.; Liu Weisheng; Niu Jinan; Wang Xiaohong; Qiang Yinghuai

2010-01-01

The combustion synthesis behavior of Mo-Si-B powder was investigated. Test specimens with nominal compositions including MoSi 2 , Mo(Si 0.975 B 0.025 ) 2 , Mo(Si 0.95 B 0.05 ) 2 , Mo(Si 0.925 B 0.075 ) 2 and Mo(Si 0.9 B 0.1 ) 2 were employed. The combustion mode, propagation velocity of combustion wave, combustion temperature and combustion product structure were studied. The results showed that the combustion wave propagated along a spiral trajectory till reaching the bottom of the compacts. The combustion temperature was increased by the addition of boron, to as high as 1922 K in the case of the Mo(Si 0.95 B 0.05 ) 2 sample. However, the flame-front propagation velocity decreased as a result of the addition of boron. The X-ray diffraction results showed that the combustion products of the Mo(Si 0.975 B 0.025 ) 2 and Mo(Si 0.9 B 0.1 ) 2 samples were composed of MoSi 2 with minor MoB. Those of the Mo(Si 0.95 B 0.05 ) 2 and Mo(Si 0.925 B 0.075 ) 2 samples were composed of MoSi 2 with minor MoB and MoB 2 . And traces of Mo 2 B 5 were identified in the Mo(Si 0.95 B 0.05 ) 2 sample.

A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis

DEFF Research Database (Denmark)

Ceccarelli, L.; Reigosa, P. D.; Iannuzzo, F.

2017-01-01

The aim of this paper is to provide an extensive overview about the state-of-art commercially available SiC power MOSFET, focusing on their short-circuit ruggedness. A detailed literature investigation has been carried out, in order to collect and understand the latest research contribution within...... this topic and create a survey of the present scenario of SiC MOSFETs reliability evaluation and failure mode analysis, pointing out the evolution and improvements as well as the future challenges in this promising device technology....

The H_6_0Si_6C_5_4 heterofullerene as high-capacity hydrogen storage medium

International Nuclear Information System (INIS)

Yong, Yongliang; Zhou, Qingxiao; Li, Xiaohong; Lv, Shijie

2016-01-01

With the great success in Si atoms doped C_6_0 fullerene and the well-established methods for synthesis of hydrogenated carbon fullerenes, this leads naturally to wonder whether Si-doped fullerenes are possible for special applications such as hydrogen storage. Here by using first-principles calculations, we design a novel high-capacity hydrogen storage material, H_6_0Si_6C_5_4 heterofullerene, and confirm its geometric stability. It is found that the H_6_0Si_6C_5_4 heterofullerene has a large HOMO-LUMO gap and a high symmetry, indicating it is high chemically stable. Further, our finite temperature simulations indicate that the H_6_0Si_6C_5_4 heterofullerene is thermally stable at 300 K. H_2 molecules would enter into the cage from the Si-hexagon ring because of lower energy barrier. Through our calculation, a maximum of 21 H_2 molecules can be stored inside the H_6_0Si_6C_5_4 cage in molecular form, leading to a gravimetric density of 11.11 wt% for 21H_2@H_6_0Si_6C_5_4 system, which suggests that the hydrogenated Si_6C_5_4 heterofullerene could be suitable as a high-capacity hydrogen storage material.

Effects of Si3+ and H+ Irradiation on Tungsten Evaluated by Internal Friction Method

International Nuclear Information System (INIS)

Hu Jing; Wang Xianping; Fang Qianfeng; Liu Changsong; Zhang Yanwen; Zhao Ziqiang

2013-01-01

Effects of Si 3+ and H + irradiation on tungsten were investigated by internal friction (IF) technique. Scanning electron microscope (SEM) analysis revealed that sequential dual Si+H irradiation resulted in more serious damage than single Si irradiation. After irradiation, the IF background was significantly enhanced. Besides, two obvious IF peaks were initially found in temperature range of 70∼330 K in the sequential Si+H irradiated tungsten sample. The mechanism of increased IF background for the irradiated samples was suggested to originate from the high density dislocations induced by ion irradiation. On the other hand, the relaxation peak P L and non-relaxation peak P H in the Si+H irradiated sample were ascribed to the interaction process of hydrogen atoms with mobile dislocations and transient processes of hydrogen redistribution, respectively. The obtained experimental results verified the high sensitivity of IF method on the irradiation damage behaviors in nuclear materials

The relationship between I{sub H{sub {alpha}}} /(I{sub SiH}{sup *}){sup 2} and crystalline volume fraction in microcrystalline silicon growth

Energy Technology Data Exchange (ETDEWEB)

Chantana, Jakapan; Higuchi, Takuya; Nagai, Tomoyuki; Sasaki, Shota; Sobajima, Yasushi; Toyama, Toshihiko; Sada, Chitose; Matsuda, Akihisa; Okamoto, Hiroaki [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan)

2010-03-15

Optical-emission-intensity ratio of I{sub H{sub {alpha}}} /(I{sub SiH}{sup *}) during film growth has been used as a simple indicator to predict crystallinity (crystal-volume fraction: X{sub C}) in the resulting microcrystalline silicon ({mu}c-Si:H) thin films. The relationship between I{sub H{sub {alpha}}} /(I{sub SiH}{sup *}) and X{sub C} has been checked under a wide variety of film-preparation conditions including low-deposition-rate (<0.1 nm/s) and high-deposition-rate (>5 nm/s) cases. On the basis of theoretical consideration, we have proposed optical-emission-intensity ratio of I{sub H{sub {alpha}}} /(I{sub SiH}{sup *}) {sup 2} as a new indicator of X{sub C} during film growth of {mu}c-Si:H. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

New Edge Coherent Mode Providing Continuous Transport in Long Pulse H-mode Plasmas

DEFF Research Database (Denmark)

Wang, H.Q.; Xu, G.S.; Wan, B.N.

2014-01-01

An electrostatic coherent mode near the electron diamagnetic frequency (20–90 kHz) is observed in the steep-gradient pedestal region of long pulse H-mode plasmas in the Experimental Advanced Super-conducting Tokamak, using a newly developed dual gas-puff-imaging system and diamond-coated reciproc...

Change of transport at L- and H-mode transition

International Nuclear Information System (INIS)

Itoh, Sanae-I; Itoh, Kimitaka.

1990-01-01

A new refined model of the L-mode and H-mode transition in tokamaks is presented based on the bifurcation of the radial electric field, E r , near edge. The radial gradient of E r is newly introduced to explain the sudden change of fluctuations as well as plasma fluxes at the onset of transition. This model predicts that the L-to H-mode transition is associated with the decrease of dE r /dr causing reduction of particle and energy fluxes at critical gradient. (author)

Charge exchange in slow collisions of Si3+ with H

Science.gov (United States)

Joseph, D. C.; Saha, B. C.

2010-10-01

Low energy electron capture from atomic hydrogen by multi-charged ions continues to be of interest and has wide applications including both magnetically confined^ fusion and astrophysical plasmas. The charge exchange process reported here, Si^3+ + H -- Si^2+ + H^+ is an important destruction mechanism of Si^3+ in photo-ionized gas. The soft X-ray emission from comets has been explained by charge transfer of solar wind ions, among them Si^3+, with neutrals in the cometary gas vapor. The state selective cross sections are evaluated using the semi-classical molecular orbital close coupling (MOCC) [1] methods. Adiabatic potentials and wave functions for a number of low-lying singlet and triplet states are calculated using the MRD-CI package [2]. Details will be presented at the conference. [1] M. Kimura and N. F. Lane, At. Mol. Opt. Phys 26, 79 (1990). [3] R. J. Buenker, ``Current Aspects of Quantum Chemistry'' 1981, Vol 21, edited by R. Carbo (Elsevier, Amsterdam) p 17.

Pedestal structure and stability in H-mode and I-mode: a comparative study on Alcator C-Mod

International Nuclear Information System (INIS)

Hughes, J.W.; Walk, J.R.; Davis, E.M.; LaBombard, B.; Baek, S.G.; Churchill, R.M.; Greenwald, M.; Hubbard, A.E.; Lipschultz, B.; Marmar, E.S.; Reinke, M.L.; Rice, J.E.; Theiler, C.; Terry, J.; White, A.E.; Whyte, D.G.; Snyder, P.B.; Groebner, R.J.; Osborne, T.; Diallo, A.

2013-01-01

New experimental data from the Alcator C-Mod tokamak are used to benchmark predictive modelling of the edge pedestal in various high-confinement regimes, contributing to greater confidence in projection of pedestal height and width in ITER and reactors. ELMy H-modes operate near stability limits for ideal peeling–ballooning modes, as shown by calculations with the ELITE code. Experimental pedestal width in ELMy H-mode scales as the square root of β pol at the pedestal top, i.e. the dependence expected from theory if kinetic ballooning modes (KBMs) were responsible for limiting the pedestal width. A search for KBMs in experiment has revealed a short-wavelength electromagnetic fluctuation in the pedestal that is a candidate driver for inter-edge localized mode (ELM) pedestal regulation. A predictive pedestal model (EPED) has been tested on an extended set of ELMy H-modes from C-Mod, reproducing pedestal height and width reasonably well across the data set, and extending the tested range of EPED to the highest absolute pressures available on any existing tokamak and to within a factor of three of the pedestal pressure targeted for ITER. In addition, C-Mod offers access to two regimes, enhanced D-alpha (EDA) H-mode and I-mode, that have high pedestals, but in which large ELM activity is naturally suppressed and, instead, particle and impurity transport are regulated continuously. Pedestals of EDA H-mode and I-mode discharges are found to be ideal magnetohydrodynamic (MHD) stable with ELITE, consistent with the general absence of ELM activity. Invocation of alternative physics mechanisms may be required to make EPED-like predictions of pedestals in these kinds of intrinsically ELM-suppressed regimes, which would be very beneficial to operation in burning plasma devices. (paper)

Recombination reduction at the c-Si/RCA oxide interface through Ar-H2 plasma treatment

NARCIS (Netherlands)

Landheer, K.; Bronsveld, P.C.P.; Poulios, I.; Tichelaar, F.D.; Kaiser, M.; Schropp, R.E.I.; Rath, J.K.

2017-01-01

An Ar‑H2 plasma treatment was applied on an ultrathin RCA oxide to create well-passivated silicon wafers with symmetric c‑Si/SiOx:H/a‑Si:H passivation layer stacks. The effective lifetime of these samples increased from 10 μs to 4 ms after annealing at 200 °C through Ar‑H2 plasma treatment of the

Atomic and electronic structures of a-SiC:H from tight-binding molecular dynamics

CERN Document Server

Ivashchenko, V I; Shevchenko, V I; Ivashchenko, L A; Rusakov, G V

2003-01-01

The atomic and electronic properties of amorphous unhydrogenated (a-SiC) and hydrogenated (a-SiC:H) silicon carbides are studied using an sp sup 3 s sup * tight-binding force model with molecular dynamics simulations. The parameters of a repulsive pairwise potential are determined from ab initio pseudopotential calculations. Both carbides are generated from dilute vapours condensed from high temperature, with post-annealing at low temperature for a-SiC:H. A plausible model for the inter-atomic correlations and electronic states in a-SiC:H is suggested. According to this model, the formation of the amorphous network is weakly sensitive to the presence of hydrogen. Hydrogen passivates effectively only the weak bonds of threefold-coordinated atoms. Chemical ordering is very much affected by the cooling rate and the structure of the high-temperature vapour. The as-computed characteristics are in rather good agreement with the results for a-SiC and a-Si:H from ab initio calculations.

Stretched exponentials and power laws in granular avalanching

Science.gov (United States)

Head, D. A.; Rodgers, G. J.

1999-02-01

We introduce a model for granular surface flow which exhibits both stretched exponential and power law avalanching over its parameter range. Two modes of transport are incorporated, a rolling layer consisting of individual particles and the overdamped, sliding motion of particle clusters. The crossover in behaviour observed in experiments on piles of rice is attributed to a change in the dominant mode of transport. We predict that power law avalanching will be observed whenever surface flow is dominated by clustered motion.

Enhanced interfacial and electrical characteristics of 4H-SiC MOS capacitor with lanthanum silicate passivation interlayer

International Nuclear Information System (INIS)

Wang, Qian; Cheng, Xinhong; Zheng, Li; Ye, Peiyi; Li, Menglu; Shen, Lingyan; Li, Jingjie; Zhang, Dongliang; Gu, Ziyue; Yu, Yuehui

2017-01-01

Highlights: • The 4H-SiC MOS capacitor with an untra-thin LaSiO_x passivation layer and Al_2O_3 gate dielectric was fabricated. • The detrimental SiO_x interfacial layer could be effectively restrained by the LaSiO_x passivation layer. • The passivation mechanism of LaSiO_x was analyzed by HRTEM, XPS and electrical measurements. • The 4H-SiC MOS capacitor with a LaSiO_x passivation layer shows excellent device characteristics. • This technique provides an efficient path to improve dielectrics/4H-SiC interfaces for future high-power device applications. - Abstract: The detrimental sub-oxide (SiO_x) interfacial layer formed during the 4H-SiC metal-oxide-semiconductor (MOS) capacitor fabrication will drastically damage its device performance. In this work, an ultrathin lanthanum silicate (LaSiO_x) passivation layer was introduced to enhance the interfacial and electrical characteristics of 4H-SiC MOS capacitor with Al_2O_3 gate dielectric. The interfacial LaSiO_x formation was investigated by high resolution transmission electron microscopy and X-ray photoelectron spectroscopy. The 4H-SiC MOS capacitor with ultrathin LaSiO_x passivation interlayer shows excellent interfacial and electrical characteristics, including lower leakage current density, higher dielectric breakdown electric field, smaller C–V hysteresis, and lower interface states density and border traps density. The involved mechanism implies that the LaSiO_x passivation interlayer can effectively restrain SiO_x formation and improve the Al_2O_3/4H-SiC interface quality. This technique provides an efficient path to improve dielectrics/4H-SiC interfaces for future high-power device applications.

Enhanced interfacial and electrical characteristics of 4H-SiC MOS capacitor with lanthanum silicate passivation interlayer

Energy Technology Data Exchange (ETDEWEB)

Wang, Qian [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Cheng, Xinhong, E-mail: xh_cheng@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); Zheng, Li, E-mail: zhengli@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Ye, Peiyi; Li, Menglu [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Shen, Lingyan; Li, Jingjie; Zhang, Dongliang; Gu, Ziyue [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Yu, Yuehui [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China)

2017-07-15

Highlights: • The 4H-SiC MOS capacitor with an untra-thin LaSiO{sub x} passivation layer and Al{sub 2}O{sub 3} gate dielectric was fabricated. • The detrimental SiO{sub x} interfacial layer could be effectively restrained by the LaSiO{sub x} passivation layer. • The passivation mechanism of LaSiO{sub x} was analyzed by HRTEM, XPS and electrical measurements. • The 4H-SiC MOS capacitor with a LaSiO{sub x} passivation layer shows excellent device characteristics. • This technique provides an efficient path to improve dielectrics/4H-SiC interfaces for future high-power device applications. - Abstract: The detrimental sub-oxide (SiO{sub x}) interfacial layer formed during the 4H-SiC metal-oxide-semiconductor (MOS) capacitor fabrication will drastically damage its device performance. In this work, an ultrathin lanthanum silicate (LaSiO{sub x}) passivation layer was introduced to enhance the interfacial and electrical characteristics of 4H-SiC MOS capacitor with Al{sub 2}O{sub 3} gate dielectric. The interfacial LaSiO{sub x} formation was investigated by high resolution transmission electron microscopy and X-ray photoelectron spectroscopy. The 4H-SiC MOS capacitor with ultrathin LaSiO{sub x} passivation interlayer shows excellent interfacial and electrical characteristics, including lower leakage current density, higher dielectric breakdown electric field, smaller C–V hysteresis, and lower interface states density and border traps density. The involved mechanism implies that the LaSiO{sub x} passivation interlayer can effectively restrain SiO{sub x} formation and improve the Al{sub 2}O{sub 3}/4H-SiC interface quality. This technique provides an efficient path to improve dielectrics/4H-SiC interfaces for future high-power device applications.

Surface Defect Passivation and Reaction of c-Si in H2S.

Science.gov (United States)

Liu, Hsiang-Yu; Das, Ujjwal K; Birkmire, Robert W

2017-12-26

A unique passivation process of Si surface dangling bonds through reaction with hydrogen sulfide (H 2 S) is demonstrated in this paper. A high-level passivation quality with an effective minority carrier lifetime (τ eff ) of >2000 μs corresponding to a surface recombination velocity of passivation by monolayer coverage of S on the Si surface. However, S passivation of the Si surface is highly unstable because of thermodynamically favorable reaction with atmospheric H 2 O and O 2 . This instability can be eliminated by capping the S-passivated Si surface with a protective thin film such as low-temperature-deposited amorphous silicon nitride.

Post-activation depression of soleus stretch reflexes in healthy and spastic humans

DEFF Research Database (Denmark)

Grey, Michael James; Klinge, Klaus; Crone, Clarissa

2007-01-01

Reduced depression of transmitter release from Ia afferents following previous activation (post-activation depression) has been suggested to be involved in the pathophysiology of spasticity. However, the effect of this mechanism on the myotatic reflex and its possible contribution to increased...... reflex excitability in spastic participants has not been tested. To investigate these effects, we examined post-activation depression in Soleus H-reflex responses and in mechanically evoked Soleus stretch reflex responses. Stretch reflex responses were evoked with consecutive dorsiflexion perturbations...... of the soleus stretch reflex and H-reflex decreased as the interval between the stimulus/perturbation was decreased. Similarly, the stretch-evoked torque decreased. In the spastic participants, the post-activation depression of both reflexes and the stretch-evoked torque was significantly smaller than...

Effect of Gas Fueling Location on H-mode Access in NSTX

International Nuclear Information System (INIS)

Maingi, R.; Bell, M.; Bell, R.; Biewer, T.; Bush, C.; Chang, C.S.; Gates, D.; Kaye, S.; Kugel, H.; LeBlanc, B.; Maqueda, R.; Menard, J.; Mueller, D.; Raman, R.; Sabbagh, S.; Soukhanovskii, V.

2003-01-01

The dependence of H-mode access on the poloidal location of the gas injection source has been investigated in the National Spherical Torus Experiment (NSTX). We find that gas fueling from the center stack midplane area produces the most reproducible H-mode access with generally the lowest L-H threshold power in lower single-null configuration. The edge toroidal rotation velocity is largest (in direction of the plasma current) just before the L-H transition with center stack midplane fueling, and then reverses direction after the L-H transition. Simulation of these results with a 2-D guiding-center Monte Carlo neoclassical transport code is qualitatively consistent with the trends in the measured velocities. Double-null discharges exhibit H-mode access with gas fueling from either the center stack midplane or center stack top locations, indicating a reduced sensitivity of H-mode access on fueling location in that shape

Gibbs free energy of reactions involving SiC, Si3N4, H2, and H2O as a function of temperature and pressure

Science.gov (United States)

Isham, M. A.

1992-01-01

Silicon carbide and silicon nitride are considered for application as structural materials and coating in advanced propulsion systems including nuclear thermal. Three-dimensional Gibbs free energy were constructed for reactions involving these materials in H2 and H2/H2O. Free energy plots are functions of temperature and pressure. Calculations used the definition of Gibbs free energy where the spontaneity of reactions is calculated as a function of temperature and pressure. Silicon carbide decomposes to Si and CH4 in pure H2 and forms a SiO2 scale in a wet atmosphere. Silicon nitride remains stable under all conditions. There was no apparent difference in reaction thermodynamics between ideal and Van der Waals treatment of gaseous species.

Stretch Sensor Device

DEFF Research Database (Denmark)

2013-01-01

The invention relates to a method for determining stretch values and movement of body parts, e.g. a foot, by analysing stretch data from a stretch sensor. By analysing data from the stretch sensor it is possible to determine stretch samples which are associated with particular motion phases...

Identification of 6H-SiC polar faces with pull-off force of atomic force microscopy

Energy Technology Data Exchange (ETDEWEB)

Gan, Di; Song, Youting; Yang, Junwei; Chen, Hongxiang [Research & development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Guo, Liwei, E-mail: lwguo@iphy.ac.cn [Research & development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Chen, Xiaolong, E-mail: chenx29@iphy.ac.cn [Research & development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

2016-12-30

Highlights: • A new method is proposed and demonstrated to distinguish the polar faces of 6H-SiC by pull-off forces which are clearly different on the Si-face and the C-face of 6H-SiC. • The reliability of this method is confirmed on 6H-SiC samples treated with different surface processing procedures. • The essence of different pull-off forces on different polar faces of 6H-SiC is that the surface energies between them are obviously different. • Theoretical calculations are consistent with our experimental results. - Abstract: Distinguishing SiC (0001) Si-face from SiC (000-1) C-face without any damages is extremely important because the two polar faces have different physical and chemical properties which seriously influence the quality of a homoepitaxy or heteroepitaxy thin film on it. Here, a convenient and nondestructive detection method is developed to distinguish the Si-face and C-face of a (0001) oriented SiC wafer by employing a pull-off force measurement using atomic force microscopy. It is found that the pull-off force from a Si-face of 6H-SiC is about two times of that from a C-face, no matter it is a two-face chemical mechanical polishing or etched 6H-SiC wafer. The method developed here is suitable to identify polar faces of materials only if the two polar faces having different surface energy.

CORRELATION OF H-MODE BARRIER WIDTH AND NEUTRAL PENETRATION LENGTH

International Nuclear Information System (INIS)

GROEBNER, R.J.; MAHDAVI, M.A.; LEONARD, A.W.; OSBORNE, T.H.; WOLF, N.S.; PORTER, G.D.; STANGEBY, P.C.; BROOKS, N.H.; COLCHIN, R.J.; HEIDBRINK, W.W.; LUCE, T.C.; MCKEE, G.R.; OWEN, L.W.; WANG, G.; WHYTE, D.G.

2002-01-01

OAK A271 CORRELATION OF H-MODE BARRIER WIDTH AND NEUTRAL PENETRATION LENGTH. Pedestal studies in DIII-D find a good correlation between the width of the H-mode density barrier and the neutral penetration length. These results are obtained by comparing experimental density profiles to the predictions of an analytic model for the profile, obtained from the particle continuity equations for electrons and deuterium atoms. In its range of validity (edge temperature between 40-500 eV), the analytic model quantitatively predicts the observed decrease of the width as the pedestal density increases, the observed strong increase of the gradient of the density as the pedestal density increases and the observation that L-mode and H-mode profiles with the same pedestal density have very similar shapes. The width of the density barrier, measured from the edge of the electron temperature barrier, is the lower limit for the observed width of the temperature barrier. These results support the hypothesis that particle fueling provides the dominant control for the size of the H-mode transport barrier

CORRELATION OF H-MODE BARRIER WIDTH AND NEUTRAL PENTRATION LENGTH

International Nuclear Information System (INIS)

GROEBNER, R.J.; MAHDAVI, M.A.; LEONARD, A.W.; OSBORNE, T.H.; WOLF, N.S.; PORTER, G.D.; STANGEBY, P.C.; BROOKS, N.H.; COLCHIN, R.J.; HEIDBRINK, W.W.; LUCE, T.C.; MCKEE, G.R.; OWEN, L.W.; WANG, G.; WHYTE, D.G.

2002-01-01

OAK A271 CORRELATION OF H-MODE BARRIER WIDTH AND NEUTRAL PENTRATION LENGTH. Pedestal studies in DIII-D find a good correlation between the width of the region of steep gradient in the H-mode density and the neutral penetration length. These results are obtained by comparing experimental density profiles to the predictions of an analytic model for the profile, obtained from the particle continuity equations for electrons and deuterium atoms. In its range of validity (edge temperature between 40-500 eV), the analytic model quantitatively predicts the observed decrease of the width as the pedestal density increases, the observed strong increase of the gradient of the density as the pedestal density increases and the observation that L-mode and H-mode profiles with the same pedestal density have very similar shapes. The width of the density barrier, measured from the edge of the electron temperature barrier, is the lower limit for the observed width of the temperature barrier. These results support the hypothesis that particle fueling provides a dominant control for the size of the H-mode transport barrier

Effect of pre-rigor stretch and various constant temperatures on the rate of post-mortem pH fall, rigor mortis and some quality traits of excised porcine biceps femoris muscle strips.

Science.gov (United States)

Vada-Kovács, M

1996-01-01

Porcine biceps femoris strips of 10 cm original length were stretched by 50% and fixed within 1 hr post mortem then subjected to temperatures of 4 °, 15 ° or 36 °C until they attained their ultimate pH. Unrestrained control muscle strips, which were left to shorten freely, were similarly treated. Post-mortem metabolism (pH, R-value) and shortening were recorded; thereafter ultimate meat quality traits (pH, lightness, extraction and swelling of myofibrils) were determined. The rate of pH fall at 36 °C, as well as ATP breakdown at 36 and 4 °C, were significantly reduced by pre-rigor stretch. The relationship between R-value and pH indicated cold shortening at 4 °C. Myofibrils isolated from pre-rigor stretched muscle strips kept at 36 °C showed the most severe reduction of hydration capacity, while paleness remained below extreme values. However, pre-rigor stretched myofibrils - when stored at 4 °C - proved to be superior to shortened ones in their extractability and swelling.

Infrared Spectra and Structures of SiH{sub 2}-(CH{sub 2}){sub 2} and CH{sub 2}=CH-SiH{sub 3} Intermediates Prepared in Reactions of Laser-ablated Silicon Atoms with Ethane

Energy Technology Data Exchange (ETDEWEB)

Cho, Han-Gook [Incheon National University, Incheon (Korea, Republic of); Andrews, Lester [University of Virginia, Charlottesville (United States)

2016-03-15

SiH{sub 2}-(CH{sub 2}){sub 2} and CH{sub 2}=CH-SiH{sub 3} were observed in the matrix IR spectra following reactions of laser-ablated Si atoms with ethane on the basis of correlation with computed frequencies. Evidently photon energy is required for the formation of the cyclic Si compound. These Si complexes are similar to the primary products in the previous studies of group 4 metals, in line with the previous results that s{sup 2}p{sup 2} and s{sup 2}d{sup 2} electronic configurations yield similar products. The relatively long C–C bond in the cyclic Si product reflects the structural strain, and the short C-Si and C-C bonds of CH{sub 3}CH=SiH{sub 2} and CH{sub 2}=CH-SiH{sub 3} show that they are true double bonds in line with the natural bond orders. Reactions of transition-metal atoms with small alkanes and halomethanes have been studied in a series of recent investigations. High oxidation-state products (methylidenes and methylidynes) along with insertion complexes were identified in the matrix spectra. It is interesting whether or not Si, a group 14 metalloid, undergoes similar reactions with larger hydrocarbons to provide higher oxidation-state compounds.

H-Mode Turbulence, Power Threshold, ELM, and Pedestal Studies in NSTX

International Nuclear Information System (INIS)

Maingi, R.; Bush, C.E.; Fredrickson, E.D.; Gates, D.A.; Kaye, S.M.; LeBlanc, B.P.; Menard, J.E.; Meyer, H.; Mueller, D.; Nishino, N.; Roquemore, A.L.; Sabbagh, S.A.; Tritz, K.; Zweben, S.J.; Bell, M.G.; Bell, R.E.; Biewer, T.; Boedo, J.A.; Johnson, D.W.; Kaita, R.; Kugel, H.W.; Maqueda, R.J.; Munsat, T.; Raman, R.; Soukhanovskii, V.A.; Stevenson, T.; Stutman, D.

2004-01-01

High-confinement mode (H-mode) operation plays a crucial role in NSTX [National Spherical Torus Experiment] research, allowing higher beta limits due to reduced plasma pressure peaking, and long-pulse operation due to high bootstrap current fraction. Here, new results are presented in the areas of edge localized modes (ELMs), H-mode pedestal physics, L-H turbulence, and power threshold studies. ELMs of several other types (as observed in conventional aspect ratio tokamaks) are often observed: (1) large, Type I ELMs, (2) ''medium'' Type II/III ELMs, and (3) giant ELMs which can reduce stored energy by up to 30% in certain conditions. In addition, many high-performance discharges in NSTX have tiny ELMs (newly termed Type V), which have some differences as compared with ELM types in the published literature. The H-mode pedestal typically contains between 25-33% of the total stored energy, and the NSTX pedestal energy agrees reasonably well with a recent international multi-machine scaling. We find that the L-H transition occurs on a ∼100 (micro)sec timescale as viewed by a gas puff imaging diagnostic, and that intermittent quiescent periods precede the final transition. A power threshold identity experiment between NSTX and MAST shows comparable loss power at the L-H transition in balanced double-null discharges. Both machines require more power for the L-H transition as the balance is shifted toward lower single null. High field side gas fueling enables more reliable H-mode access, but does not always lead to a lower power threshold e.g., with a reduction of the duration of early heating. Finally the edge plasma parameters just before the L-H transition were compared with theories of the transition. It was found that while some theories can separate well-developed L- and H-mode data, they have little predictive value

Verification of Fowler–Nordheim electron tunneling mechanism in Ni/SiO{sub 2}/n-4H SiC and n{sup +} poly-Si/SiO{sub 2}/n-4H SiC MOS devices by different models

Energy Technology Data Exchange (ETDEWEB)

Kodigala, Subba Ramaiah, E-mail: kodigala@gmail.com [Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208 (United States); Department of Physics and Astronomy, Department of Electrical and Computer Engineering, California State University, Northridge, CA 91330 (United States)

2016-11-01

This article emphasizes verification of Fowler–Nordheim electron tunneling mechanism in the Ni/SiO{sub 2}/n-4H SiC MOS devices by developing three different kinds of models. The standard semiconductor equations are categorically solved to obtain the change in Fermi energy level of semiconductor with effect of temperature and field that extend support to determine sustainable and accurate tunneling current through the oxide layer. The forward and reverse bias currents with variation of electric field are simulated with help of different models developed by us for MOS devices by applying adequate conditions. The latter is quite different from former in terms of tunneling mechanism in the MOS devices. The variation of barrier height with effect of quantum mechanical, temperature, and fields is considered as effective barrier height for the generation of current–field (J–F) curves under forward and reverse biases but quantum mechanical effect is void in the latter. In addition, the J–F curves are also simulated with variation of carrier concentration in the n-type 4H SiC semiconductor of MOS devices and the relation between them is established.

Discriminant analysis to predict the occurrence of ELMs in H-mode discharges

International Nuclear Information System (INIS)

Kardaun, O.J.W.F.; Itoh, S.; Itoh, K.; Kardaun, J.W.P.F.

1993-08-01

After an exposition of its theoretical background, discriminant analysis is applied to the H-mode confinement database to find the region in plasma parameter space in which H-mode with small ELMs (Edge Localized Modes) is likely to occur. The boundary of this region is determined by the condition that the probability of appearance of such a type of H-mode, as a function of the plasma parameters, should be (1) larger than some threshold value and (2) larger than the corresponding probability for other types of H-mode (i.e., H-mode without ELMs or with giant ELMs). In practice, the discrimination has been performed for the ASDEX, JET and JFT-2M tokamaks (a) using four instantaneous plasma parameters (injected power P inj , magnetic field B t , plasma current I p and line averaged electron density (n-bar e ) and (b) taking also memory effects of the plasma and the distance between the plasma and the wall into account, while using variables that are normalised with respect to machine size. Generally speaking, it is found that there is a substantial overlap between the region of H-mode with small ELMs and the region of the two other types of H-mode. However, the ELM-free and the giant ELM H-modes relatively rarely appear in the region, that, according to the analysis, is allocated to small ELMs. A reliable production of H-mode with only small ELMs seems well possible by choosing this regime in parameter space. In the present study, it was not attempted to arrive at a unified discrimination across the machines. So, projection from one machine to another remains difficult, and a reliable determination of the region where small ELMs occur still requires a training sample from the device under consideration. (author) 53 refs

Energy confinement and transport of H-mode plasmas in tokamak

International Nuclear Information System (INIS)

Urano, Hajime

2005-02-01

A characteristic feature of the high-confinement (H-mode) regime is the formation of a transport barrier near the plasma edge, where steepening of the density and temperature gradients is observed. The H-mode is expected to be a standard operation mode in a next-step fusion experimental reactor, called ITER-the International Thermonuclear Experimental Reactor. However, energy confinement in the H-mode has been observed to degrade with increasing density. This is a critical constraint for the operation domain in the ITER. Investigation of the main cause of confinement degradation is an urgent issue in the ITER Physics Research and Development Activity. A key element for solving this problem is investigation of the energy confinement and transport properties of H-mode plasmas. However, the influence of the plasma boundary characterized by the transport barrier in H-modes on the energy transport of the plasma core has not been examined sufficiently in tokamak research. The aim of this study is therefore to investigate the energy confinement properties of H-modes in a variety of density, plasma shape, seed impurity concentration, and conductive heat flux in the plasma core using the experimental results obtained in the JT-60U tokamak of Japan Atomic Energy Research Institute. Comparison of the H-mode confinement properties with those of other tokamaks using an international multi-machine database for extrapolation to the next step device was also one of the main subjects in this study. Density dependence of the energy confinement properties has been examined systematically by separating the thermal stored energy into the H-mode pedestal component determined by MHD stability called the Edge Localized Modes (ELMs) and the core component governed by gyro-Bohm-like transport. It has been found that the pedestal pressure imposed by the destabilization of ELM activities led to a reduction in the pedestal temperature with increasing density. The core temperature for each

Explicit analytical modeling of the low frequency a-Si:H/c-Si heterojunction capacitance: Analysis and application to silicon heterojunction solar cells

Energy Technology Data Exchange (ETDEWEB)

Maslova, O. [Keldysh Institute of Applied Mathematics, Russian Academy of Sciences, Miusskaya sq., 4, Moscow 125047 (Russian Federation); GeePs (Group of electrical engineering of Paris), CNRS UMR 8507, CentraleSupélec, Univ Paris-Sud, Sorbonne Universités-UPMC Univ Paris 06, 11 rue Joliot-Curie, Plateau de Moulon, F-91192 Gif-sur-Yvette Cedex (France); Brézard-Oudot, A.; Gueunier-Farret, M.-E.; Alvarez, J.; Kleider, J.-P. [GeePs (Group of electrical engineering of Paris), CNRS UMR 8507, CentraleSupélec, Univ Paris-Sud, Sorbonne Universités-UPMC Univ Paris 06, 11 rue Joliot-Curie, Plateau de Moulon, F-91192 Gif-sur-Yvette Cedex (France)

2015-09-21

We develop a fully analytical model in order to describe the temperature dependence of the low frequency capacitance of heterojunctions between hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si). We demonstrate that the slope of the capacitance-temperature (C-T) curve is strongly enhanced if the c-Si surface is under strong inversion conditions compared to the usually assumed depletion layer capacitance. We have extended our analytical model to integrate a very thin undoped (i) a-Si:H layer at the interface and the finite thickness of the doped a-Si:H layer that are used in high efficiency solar cells for the passivation of interface defects and to limit short circuit current losses. Finally, using our calculations, we analyze experimental data on high efficiency silicon heterojunction solar cells. The transition from the strong inversion limited behavior to the depletion layer behavior is discussed in terms of band offsets, density of states in a-Si:H, and work function of the indium tin oxide (ITO) front electrode. In particular, it is evidenced that strong inversion conditions prevail at the c-Si surface at high temperatures down to 250 K, which can only be reproduced if the ITO work function is larger than 4.7 eV.

Low-temperature formation of crystalline Si:H/Ge:H heterostructures by plasma-enhanced CVD in combination with Ni-nanodots seeding nucleation

Science.gov (United States)

Lu, Yimin; Makihara, Katsunori; Takeuchi, Daichi; Ikeda, Mitsuhisa; Ohta, Akio; Miyazaki, Seiichi

2017-06-01

Hydrogenated microcrystalline (µc) Si/Ge heterostructures were prepared on quartz substrates by plasma-enhanced chemical vapor deposition (CVD) from VHF inductively coupled plasma of SiH4 just after GeH4 employing Ni nanodots (NDs) as seeds for crystalline nucleation. The crystallinity of the films and the progress of grain growth were characterized by Raman scattering spectroscopy and atomic force microscopy (AFM), respectively. When the Ge films were grown on Ni-NDs at 250 °C, the growth of µc-Ge films with crystallinity as high as 80% was realized without an amorphous phase near the Ge film/quartz substrate interface. After the subsequent Si film deposition at 250 °C, fine grains were formed in the early stages of film growth on µc-Ge films with compositional mixing (µc-Si0.85Ge0.15:H) caused by the release of large lattice mismatch between c-Si and c-Ge. With further increase in Si:H film thickness, the formation of large grain structures accompanied by fine grains was promoted. These results suggest that crystalline Si/Ge heterojunctions can be used for efficient carrier collection in solar cell application.

Stretching

Science.gov (United States)

... after a workout. Stretching still can be a beneficial activity after you have sufficiently warmed up. The ... light aerobic activity and stretching. If you're running at a quick pace, you can slow down ...

Direct pathway for sticking/desorption of H2 on Si(100)

DEFF Research Database (Denmark)

Kratzer, Peter; Hammer, Bjørk; Nørskov, Jens Kehlet

1995-01-01

The energetics of H2 interacting with the Si(100) surface is studied by means of ab initio total-energy calculations within the framework of density-functional theory. We find a direct desorption pathway from the monohydride phase that is compatible with experimental activation energies and demon......The energetics of H2 interacting with the Si(100) surface is studied by means of ab initio total-energy calculations within the framework of density-functional theory. We find a direct desorption pathway from the monohydride phase that is compatible with experimental activation energies...... and demonstrate the importance of substrate relaxation for this process. Both the transition state configuration and the barrier height depend crucially on the degree of buckling of the Si dimers on the Si(100) surface. The adsorption barrier height on the clean surface is governed by the buckling via its...

An emerging understanding of H-mode discharges in tokamaks

International Nuclear Information System (INIS)

Groebner, R.J.

1992-12-01

A remarkable degree of consistency of experimental results from tokamaks throughout the world has developed with regard to the phenomenology of the transition from L-mode to H-mode confinement in tokamaks. The transition is initiated in a narrow layer at the plasma periphery where density fluctuations are suppressed and steep gradients of temperature and density form in a region with large first and second radial derivatives in the υ E → = (E x B)/B 2 flow velocity. These results are qualitatively consistent with theories which predict suppression of fluctuations by shear or curvature in υE. The required υE flow is generated very rapidly when the magnitude of the heating power or of an externally imposed radial current exceed threshold values and several theoretical models have been developed to explain the observed changes in the υE flow. After the transition occurs, the altered boundary conditions enable the development of improved confinement in the plasma interior on a confinement time scale. The resulting H-mode discharge has typically twice the confinement of L-mode discharges and regimes of further improved confinement have been obtained in some H-mode scenarios

Low damage electrical modification of 4H-SiC via ultrafast laser irradiation

Science.gov (United States)

Ahn, Minhyung; Cahyadi, Rico; Wendorf, Joseph; Bowen, Willie; Torralva, Ben; Yalisove, Steven; Phillips, Jamie

2018-04-01

The electrical properties of 4H-SiC under ultrafast laser irradiation in the low fluence regime (engineering spatially localized structural and electronic modification of wide bandgap materials such as 4H-SiC with relatively low surface damage via low temperature processing.

Thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap semiconductors SiC, GaN, and ZnO

Directory of Open Access Journals (Sweden)

Zheng Huang

2015-09-01

Full Text Available We have investigated the thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap(n-type semiconductors SiC, GaN, and ZnO based on first-principles calculations and Boltzmann transport theory. Our results show that the thermoelectric performance increases from 3C to 6H, 4H, and 2H structures with an increase of hexagonality for SiC. However, for GaN and ZnO, their power factors show a very weak dependence on the polytype. Detailed analysis of the thermoelectric properties with respect to temperature and carrier concentration of 4H-SiC, 2H-GaN, and 2H-ZnO shows that the figure of merit of these three compounds increases with temperature, indicating the promising potential applications of these thermoelectric materials at high temperature. The significant difference of the polytype-dependent thermoelectric properties among SiC, GaN, and ZnO might be related to the competition between covalency and ionicity in these semiconductors. Our calculations may provide a new way to enhance the thermoelectric properties of wide-band-gap semiconductors through atomic structure design, especially hexagonality design for SiC.

Characterization of a n+3C/n−4H SiC heterojunction diode

Energy Technology Data Exchange (ETDEWEB)

Minamisawa, R. A.; Mihaila, A. [Department of Power Electronics, ABB Corporate Research Center, CH-5405 Baden-Dättwil (Switzerland); Farkas, I.; Hsu, C.-W.; Janzén, E. [Semiconductor Materials, IFM, Linköping University, SE-58183 Linköping (Sweden); Teodorescu, V. S. [National Institute of Material Physics, R-077125 Bucharest-Măgurele (Romania); Afanas' ev, V. V. [Semiconductor Physics Laboratory, KU Leuven, 3001 Leuven (Belgium); Rahimo, M. [ABB Semiconductors, Fabrikstrasse 3, CH-5600 Lenzburg (Switzerland)

2016-04-04

We report on the fabrication of n + 3C/n-4H SiC heterojunction diodes (HJDs) potentially promising the ultimate thermal stability of the junction. The diodes were systematically analyzed by TEM, X-ray diffraction, AFM, and secondary ion mass spectroscopy, indicating the formation of epitaxial 3C-SiC crystal on top of 4H-SiC substrate with continuous interface, low surface roughness, and up to ∼7 × 10{sup 17 }cm{sup −3} dopant impurity concentration. The conduction band off-set is about 1 V as extracted from CV measurements, while the valence bands of both SiC polytypes are aligned. The HJDs feature opening voltage of 1.65 V, consistent with the barrier height of about 1.5 eV extracted from CV measurement. We finally compare the electrical results of the n + 3C/n-4H SiC heterojunction diodes with those featuring Si and Ge doped anodes in order to evaluate current challenges involved in the fabrication of such devices.

Robustness up to 400°C of the passivation of c-Si by p-type a-Si:H thanks to ion implantation

Science.gov (United States)

Defresne, A.; Plantevin, O.; Roca i Cabarrocas, Pere

2016-12-01

Heterojunction solar cells based on crystalline silicon (c-Si) passivated by hydrogenated amorphous silicon (a-Si:H) thin films are one of the most promising architectures for high energy conversion efficiency. Indeed, a-Si:H thin films can passivate both p-type and n-type wafers and can be deposited at low temperature (layers, in particular p-type a-Si:H, show a dramatic degradation in passivation quality above 200°C. Yet, annealing at 300 - 400°C the TCO layer and metallic contacts is highly desirable to reduce the contact resistance as well as the TCO optical absorption. In this work, we show that as expected, ion implantation (5 - 30 keV) introduces defects at the c-Si/a-Si:H interface which strongly degrade the effective lifetime, down to a few micro-seconds. However, the passivation quality can be restored and lifetime values can be improved up to 2 ms over the initial value with annealing. We show here that effective lifetimes above 1 ms can be maintained up to 380°C, opening up the possibility for higher process temperatures in silicon heterojunction device fabrication.

Buffer-eliminated, charge-neutral epitaxial graphene on oxidized 4H-SiC (0001) surface

International Nuclear Information System (INIS)

Sirikumara, Hansika I.; Jayasekera, Thushari

2016-01-01

Buffer-eliminated, charge-neutral epitaxial graphene (EG) is important to enhance its potential in device applications. Using the first principles Density Functional Theory calculations, we investigated the effect of oxidation on the electronic and structural properties of EG on 4H-SiC (0001) surface. Our investigation reveals that the buffer layer decouples from the substrate in the presence of both silicate and silicon oxy-nitride at the interface, and the resultant monolayer EG is charge-neutral in both cases. The interface at 4H-SiC/silicate/EG is characterized by surface dangling electrons, which opens up another route for further engineering EG on 4H-SiC. Dangling electron-free 4H-SiC/silicon oxy-nitride/EG is ideal for achieving charge-neutral EG.

Influence of LaSiOx passivation interlayer on band alignment between PEALD-Al2O3 and 4H-SiC determined by X-ray photoelectron spectroscopy

Science.gov (United States)

Wang, Qian; Cheng, Xinhong; Zheng, Li; Shen, Lingyan; Zhang, Dongliang; Gu, Ziyue; Qian, Ru; Cao, Duo; Yu, Yuehui

2018-01-01

The influence of lanthanum silicate (LaSiOx) passivation interlayer on the band alignment between plasma enhanced atomic layer deposition (PEALD)-Al2O3 films and 4H-SiC was investigated by high resolution X-ray photoelectron spectroscopy (XPS). An ultrathin in situ LaSiOx interfacial passivation layer (IPL) was introduced between the Al2O3 gate dielectric and the 4H-SiC substrate to enhance the interfacial characteristics. The valence band offset (VBO) and corresponding conduction band offset (CBO) for the Al2O3/4H-SiC interface without any passivation were extracted to be 2.16 eV and 1.49 eV, respectively. With a LaSiOx IPL, a VBO of 1.79 eV and a CBO of 1.86 eV could be obtained across the Al2O3/4H-SiC interface. The difference in the band alignments was dominated by the band bending or band shift in the 4H-SiC substrate as a result of different interfacial layers (ILs) formed at the interface. This understanding of the physical details of the band alignment could be a good foundation for Al2O3/LaSiOx/4H-SiC heterojunctions applied in the 4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs).

The role of MHD instabilities in the improved H-mode scenario

International Nuclear Information System (INIS)

Flaws, Asher

2009-01-01

Recently a regime of tokamak operation has been discovered, dubbed the improved H-mode scenario, which simultaneously achieves increased energy confinement and stability with respect to standard H-mode discharges. It has been suggested that magnetohydrodynamic (MHD) instabilities play some role in establishing this regime. In this thesis MHD instabilities were identified, characterised, and catalogued into a database of improved H-mode discharges in order to statistically examine their behaviour. The onset conditions of MHD instabilities were compared to existing models based on previous H-mode studies. Slight differences were found, most notably a reduced β N onset threshold for the frequently interrupted regime for neoclassical tearing modes (NTM). This reduced threshold is due to the relatively low magnetic shear of the improved H-mode regime. This study also provided a first-time estimate for the seed island size of spontaneous onset NTMs, a phenomenon characteristic of the improved H-mode scenario. Energy confinement investigations found that, although the NTM impact on confinement follows the same model applicable to other operating regimes, the improved H-mode regime acts to mitigate the impact of NTMs by limiting the saturated island sizes for NTMs with toroidal mode number n ≥ 2. Surprisingly, although a significant loss in energy confinement is observed during the sawtooth envelope, it has been found that discharges containing fishbones and low frequency sawteeth achieve higher energy confinement than those without. This suggests that fishbone and sawtooth reconnection may indeed play a role in establishing the high confinement regime. It was found that the time evolution of the central magnetic shear consistently locks in the presence of sawtooth and fishbone reconnection. Presumably this is due to the periodic redistribution of the central plasma current, an effect which is believed to help establish and maintain the characteristic current profile

The role of MHD instabilities in the improved H-mode scenario

Energy Technology Data Exchange (ETDEWEB)

Flaws, Asher

2009-02-16

Recently a regime of tokamak operation has been discovered, dubbed the improved H-mode scenario, which simultaneously achieves increased energy confinement and stability with respect to standard H-mode discharges. It has been suggested that magnetohydrodynamic (MHD) instabilities play some role in establishing this regime. In this thesis MHD instabilities were identified, characterised, and catalogued into a database of improved H-mode discharges in order to statistically examine their behaviour. The onset conditions of MHD instabilities were compared to existing models based on previous H-mode studies. Slight differences were found, most notably a reduced {beta}{sub N} onset threshold for the frequently interrupted regime for neoclassical tearing modes (NTM). This reduced threshold is due to the relatively low magnetic shear of the improved H-mode regime. This study also provided a first-time estimate for the seed island size of spontaneous onset NTMs, a phenomenon characteristic of the improved H-mode scenario. Energy confinement investigations found that, although the NTM impact on confinement follows the same model applicable to other operating regimes, the improved H-mode regime acts to mitigate the impact of NTMs by limiting the saturated island sizes for NTMs with toroidal mode number n {>=} 2. Surprisingly, although a significant loss in energy confinement is observed during the sawtooth envelope, it has been found that discharges containing fishbones and low frequency sawteeth achieve higher energy confinement than those without. This suggests that fishbone and sawtooth reconnection may indeed play a role in establishing the high confinement regime. It was found that the time evolution of the central magnetic shear consistently locks in the presence of sawtooth and fishbone reconnection. Presumably this is due to the periodic redistribution of the central plasma current, an effect which is believed to help establish and maintain the characteristic current

Characterization of anodic SiO2 films on P-type 4H-SiC

International Nuclear Information System (INIS)

Woon, W.S.; Hutagalung, S.D.; Cheong, K.Y.

2009-01-01

The physical and electronic properties of 100-120-nm thick anodic silicon dioxide film grown on p-type 4H-SiC wafer and annealed at different temperatures (500, 600, 700, and 800 deg. C ) have been investigated and reported. Chemical bonding of the films has been analyzed by Fourier transform infra red spectroscopy. Smooth and defect-free film surface has been revealed under field emission scanning electron microscope. Atomic force microscope has been used to study topography and surface roughness of the films. Electronic properties of the film have been investigated by high frequency capacitance-voltage and current-voltage measurements. As the annealing temperature increased, refractive index, dielectric constant, film density, SiC surface roughness, effective oxide charge, and leakage current density have been reduced until 700 deg. C . An increment of these parameters has been observed after this temperature. However, a reversed trend has been demonstrated in porosity of the film and barrier height between conduction band edge of SiO 2 and SiC

The quiescent H-mode regime for high performance edge localized mode-stable operation in future burning plasmas

Energy Technology Data Exchange (ETDEWEB)

Garofalo, A. M., E-mail: garofalo@fusion.gat.com; Burrell, K. H.; Meneghini, O.; Osborne, T. H.; Paz-Soldan, C.; Smith, S. P.; Snyder, P. B.; Turnbull, A. D. [General Atomics, P.O. Box 85608, San Diego, California 92186-5608 (United States); Eldon, D.; Grierson, B. A.; Solomon, W. M. [Princeton Plasma Physics Laboratory, P.O. Box 451, Princeton, New Jersey 08543-0451 (United States); Hanson, J. M. [Columbia University, 2960 Broadway, New York, New York 10027-6900 (United States); Holland, C. [University of California San Diego, 9500 Gilman Dr., La Jolla, California 92093-0417 (United States); Huijsmans, G. T. A.; Liu, F.; Loarte, A. [ITER Organization, Route de Vinon sur Verdon, 13067 St Paul Lez Durance (France); Zeng, L. [University of California Los Angeles, P.O. Box 957099, Los Angeles, California 90095-7099 (United States)

2015-05-15

For the first time, DIII-D experiments have achieved stationary quiescent H-mode (QH-mode) operation for many energy confinement times at simultaneous ITER-relevant values of beta, confinement, and safety factor, in an ITER-like shape. QH-mode provides excellent energy confinement, even at very low plasma rotation, while operating without edge localized modes (ELMs) and with strong impurity transport via the benign edge harmonic oscillation (EHO). By tailoring the plasma shape to improve the edge stability, the QH-mode operating space has also been extended to densities exceeding 80% of the Greenwald limit, overcoming the long-standing low-density limit of QH-mode operation. In the theory, the density range over which the plasma encounters the kink-peeling boundary widens as the plasma cross-section shaping is increased, thus increasing the QH-mode density threshold. The DIII-D results are in excellent agreement with these predictions, and nonlinear magnetohydrodynamic analysis of reconstructed QH-mode equilibria shows unstable low n kink-peeling modes growing to a saturated level, consistent with the theoretical picture of the EHO. Furthermore, high density operation in the QH-mode regime has opened a path to a new, previously predicted region of parameter space, named “Super H-mode” because it is characterized by very high pedestals that can be more than a factor of two above the peeling-ballooning stability limit for similar ELMing H-mode discharges at the same density.

Observation of precursor magnetic oscillations to the H-mode transition of ASDEX

International Nuclear Information System (INIS)

Toi, K.; Gernhardt, J.; Klueber, O.; Kornherr, M.

1988-05-01

Precursor oscillations to the H-mode transition are identified in magnetic fluctuations of the ASDEX H-mode discharges initiated without a sawtooth. This precursor is m=4/n=1 mode, rotating with f ≅ 10 kHz in the opposite direction to co-injected neutral beams. Time behaviour of the amplitude suggests that the H-mode transition is caused, not by the edge electron temperature, but by the edge current density. (orig.)

Investigation of SiO{sub 2} film growth on 4H-SiC by direct thermal oxidation and postoxidation annealing techniques in HNO{sub 3} and H{sub 2}O vapor at varied process durations

Energy Technology Data Exchange (ETDEWEB)

Poobalan, Banu [Electronic Materials Research Group, School of Materials and Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Seberang Perai Selatan, Penang (Malaysia); Moon, Jeong Hyun; Kim, Sang-Cheol; Joo, Sung-Jae; Bahng, Wook; Kang, In Ho; Kim, Nam-Kyun [Power Semiconductor Research Centre, Korea Electrotechnology Research Institute, PO Box 20, Changwon, Gyungnam 641120 (Korea, Republic of); Cheong, Kuan Yew, E-mail: cheong@eng.usm.my [Electronic Materials Research Group, School of Materials and Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Seberang Perai Selatan, Penang (Malaysia)

2014-11-03

This study has revealed that HNO{sub 3} and H{sub 2}O vapors can be utilized as direct thermal oxidation or postoxidation annealing agents at a temperature above 1000 °C; as they play a major role in simultaneous oxidation/nitridation/hydrogenation processes at the bulk oxide and SiO{sub 2}/SiC interface. The varied process durations of the above-mentioned techniques contribute to the development of thicker gate oxides for high power device applications with improved electrical properties, lower interface-state density and higher breakdown voltage as compared to oxides grown through a more conventional wet (H{sub 2}O vapor only) oxidation technique. The study highlights the effects of hydrogen and nitrogen species on the passivation of structural defects at the bulk oxide and the SiO{sub 2}/SiC interface, which are revealed through the use of Time-of-Flight Secondary Ion Mass Spectroscopy and X-ray Photoelectron Spectroscopy. The physical properties of the substrate after oxide removal show that the surface roughness decreases as the process durations increase with longer hours of H{sub 2}O and HNO{sub 3} vapor exposures on the samples, which is mainly due to the significant reduction of carbon content at the SiO{sub 2}/SiC interface. - Highlights: • Direct thermal oxidation and postoxidation annealing techniques in HNO{sub 3}/H{sub 2}O vapor • SiO{sub 2} film growth in H{sub 2}O/HNO{sub 3}vapor at varied process durations • Thicker SiO{sub 2} film growth via annealing than direct growth in HNO{sub 3}/H{sub 2}O vapor • Nitrogen and hydrogen as passivation elements in SiO{sub 2}/SiC interface and SiO{sub 2} bulk • Significant reduction of carbon and Si-dangling bonds at the SiC/SiO{sub 2} interface.

Effect of doping on structural, optical and electrical properties of nanostructure ZnO films deposited onto a-Si:H/Si heterojunction

Science.gov (United States)

Sali, S.; Boumaour, M.; Kermadi, S.; Keffous, A.; Kechouane, M.

2012-09-01

We investigated the structural; optical and electrical properties of ZnO thin films as the n-type semiconductor for silicon a-Si:H/Si heterojunction photodiodes. The ZnO film forms the front contact of the super-strata solar cell and has to exhibit good electrical (high conductivity) and optical (high transmittance) properties. In this paper we focused our attention on the influence of doping on device performance. The results show that the X-ray diffraction (XRD) spectra revealed a preferred orientation of the crystallites along c-axis. SEM images show that all films display a granular, polycrystalline morphology and the ZnO:Al exhibits a better grain uniformity. The transmittance of the doped films was found to be higher when compared to undoped ZnO. A low resistivity of the order of 2.8 × 10-4 Ω cm is obtained for ZnO:Al using 0.4 M concentration of zinc acetate. The photoluminescence (PL) spectra exhibit a blue band with two peaks centered at 442 nm (2.80 eV) and 490 nm (2.53 eV). It is noted that after doping the ZnO films a shift of the band by 22 nm (0.15 eV) is recorded and a high luminescence occurs when using Al as a dopant. Dark I-V curves of ZnO/a-Si:H/Si structure showed large difference, which means there is a kind of barrier to current flow between ZnO and a-Si:H layer. Doping films was applied and the turn-on voltages are around 0.6 V. Under reverse bias, the current of the ZnO/a-Si:H/Si heterojunction is larger than that of ZnO:Al/a-Si:H/Si. The improvement with ZnO:Al is attributed to a higher number of generated carriers in the nanostructure (due to the higher transmittance and a higher luminescence) that increases the probability of collisions.

Investigation of lower hybrid current drive during H-mode in EAST tokamak

International Nuclear Information System (INIS)

Li Miao-Hui; Ding Bo-Jiang; Kong Er-Hua; Zhang Lei; Zhang Xin-Jun; Qian Jin-Ping; Yan Ning; Han Xiao-Feng; Shan Jia-Fang; Liu Fu-Kun; Wang Mao; Xu Han-Dong; Wan Bao-Nian

2011-01-01

H-mode discharges with lower hybrid current drive (LHCD) alone are achieved in EAST divertor plasma over a wide parameter range. These H-mode discharges are characterized by a sudden drop in D α emission and a spontaneous rise in main plasma density. Good lower hybrid (LH) coupling during H-mode is obtained by putting the plasma close to the antenna and by injecting D 2 gas from a pipe near the grill mouse. The analysis of lower hybrid current drive properties shows that the LH deposition profile shifts off axis during H-mode, and current drive (CD) efficiency decreases due to the increase in density. Modeling results of H-mode discharges with a general ray tracing code GENRAY are reported. (physics of gases, plasmas, and electric discharges)

Strongly coupled modes of M and H for perpendicular resonance

Science.gov (United States)

Sun, Chen; Saslow, Wayne M.

2018-05-01

We apply the equations for the magnetization M ⃗ and field H ⃗ to study their coupled modes for a semi-infinite ferromagnet, conductor, or insulator with magnetization M0 and field H0 normal to the plane (perpendicular resonance) and wave vector normal to the plane, which makes the modes doubly degenerate. With dimensionless damping constant α and dimensionless transverse susceptibility χ⊥=M0/He(He≡H0-M0) , we derive an analytic expression for the wave vector squared, showing that M ⃗ and H ⃗ are nearly decoupled only if α ≫χ⊥ . This is violated in the ferromagnetic regime, although a first correction is found to give good agreement away from resonance. Emphasizing the conductor permalloy as a function of H0 we study the eigenvalues and eigenmodes and the dissipation rate due to absorption both from the total effective field and from the Joule heating. (We include the contribution of the nonuniform exchange energy term, needed for energy conservation.) Using these modes we then apply, for a semi-infinite ferromagnet, a range of boundary conditions (i.e., surface anisotropies) on M⊥ to find the reflection coefficient R and the reflectivity |R| 2. As a function of H0, absorption is dominated by the the skin depth mode (primarily H ⃗) except near the resonance and at a higher-field Hd associated with a dip in the reflectivity, whose position above the main resonance varies quadratically with the surface anisotropy Ks. The dip is driven by the boundary condition on M ⃗; the coefficient of the (primarily) M ⃗ mode becomes very small at the dip, being compensated by an increase in the amplitude of the M ⃗ mode, which has a Lorentzian line shape of height ˜α-1 and width ˜α .

Cyclic mechanical stretch enhances BMP9-induced osteogenic differentiation of mesenchymal stem cells.

Science.gov (United States)

Song, Yang; Tang, Yinhong; Song, Jinlin; Lei, Mingxing; Liang, Panpan; Fu, Tiwei; Su, Xudong; Zhou, Pengfei; Yang, Li; Huang, Enyi

2018-04-01

The purpose of this study was to investigate whether mechanical stretch can enhance the bone morphogenetic protein 9 (BMP9)-induced osteogenic differentiation in MSCs. Recombinant adenoviruses were used to overexpress the BMP9 in C3H10T1/2 MSCs. Cells were seeded onto six-well BioFlex collagen I-coated plates and subjected to cyclic mechanical stretch [6% elongation at 60 cycles/minute (1 Hz)] in a Flexercell FX-4000 strain unit for up to 12 hours. Immunostaining and confocal microscope were used to detect cytoskeleton organization. Cell cycle progression was checked by flow cytometry. Alkaline phosphatase activity was measured with a Chemiluminescence Assay Kit and was quantified with a histochemical staining assay. Matrix mineralization was examined by Alizarin Red S Staining. Mechanical stretch induces cytoskeleton reorganization and inhibits cell proliferation by preventing cells entry into S phase of the cell cycle. Although mechanical stretch alone does not induce the osteogenic differentiation of C3H10T1/2 MSCs, co-stimulation with mechanical stretch and BMP9 enhances alkaline phosphatase activity. The expression of key lineage-specific regulators (e.g., osteocalcin (OCN), SRY-related HMG-box 9, and runt-related transcription factor 2) is also increased after the co-stimulation, compared to the mechanical stretch stimulation along. Furthermore, mechanical stretch augments the BMP9-mediated bone matrix mineralization of C3H10T1/2 MSCs. Our results suggest that mechanical stretch enhances BMP9-induced osteoblastic lineage specification in C3H10T1/2 MSCs.

Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology Implications

Science.gov (United States)

Neudeck, Philip G.; Huang, Wei; Dudley, Michael; Fazi, Christian

1998-01-01

It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vectors greater than or equal to 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = 1c with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. While not nearly as detrimental to SiC device performance as micropipes, it has recently been demonstrated that elementary screw dislocations somewhat degrade the reverse leakage and breakdown properties of 4H-SiC p(+)n diodes. Diodes containing elementary screw dislocations exhibited a 5% to 35% reduction in breakdown voltage, higher pre-breakdown reverse leakage current, softer reverse breakdown I-V knee, and microplasmic breakdown current filaments that were non-catastrophic as measured under high series resistance biasing. This paper details continuing experimental and theoretical investigations into the electrical properties of 4H-SiC elementary screw dislocations. The nonuniform breakdown behavior of 4H-SiC p'n junctions containing elementary screw dislocations exhibits interesting physical parallels with nonuniform breakdown phenomena previously observed in other semiconductor materials. Based upon experimentally observed dislocation-assisted breakdown, a re-assessment of well-known physical models relating power device reliability to junction breakdown has been undertaken for 4H-SiC. The potential impact of these elementary screw dislocation defects on the performance and reliability of various 4H-SiC device technologies being developed for high-power applications will be discussed.

γ-radiation resistance of amorphous films of a-Si1-xGex:H solid solution

International Nuclear Information System (INIS)

Najafov, B.A.; Isakov, G.I.; Figarov, V.R.

2004-01-01

Full text: a-Si 1-x Ge x :H solid solution amorphous films (with x=0.4; 0.7, H=17 at. %) were fabricated by the plasma-chemical deposition method 1 μm thick, at the substrate temperature of 200 deg. C, the rate of deposition was 0.1 A /s, and the distance between the target and the substrate was L∼25 cm. The dispersion process was conducted in a hydrogenous plasma medium, that had been obtained with the use of a magnetron and a RF field. Taken ESR spectra of a-Si 1-x Ge x :H at 80 K were asymmetric in form, inasmuch as they were composed of two kinds relating to free bonds of Si and Ge, respectively. At the same time the observed signal was not a simple superposition of the two signals (for Si and for Ge), since they violently interacted with each other and the resulting signal in the intervening interval aimed to assume the form of a sole line. Because of this the observed spectrum on the left and on the right could be depicted by a superposition of the two signal: with g-factor of g=2.004-2.006 and the line width of 51-65 G and with g=2.018-2.022 and 73-86 G relating to the silicon and germanium free bonds, respectively. In this way it could be evaluated densities of Si and Ge free bonds, taken separately. But in accordance with computation of molecular orbitals in a-Si 1-x Ge x :H, the presence of atoms, adjacent to the orbitals, almost does not alter g-value of ESR-signals from both Si and Ge free bonds. By the IR absorption spectrum determining a number of Si-H bonds, and also a number of Ge-H bonds, it may assert that a number of Ge free bonds is 8-10 times larger than that of Si. It is proved that in a-Si 1 x Ge x : H films H atoms are mainly bound to Si atoms and so a total number of H is reduced with increasing of Ge content. That stands for the density of Ge free bonds decreases a number of H atoms, bound to Ge, but it does not a number of H atoms, bound to Si. This fact is also confirmed by ESR investigations. ESR investigations in a-Si 1-x Ge x :H

QUIESCENT H-MODE, AN ELM-FREE HIGH-CONFINEMENT MODE ON DIII-D WITH POTENTIAL FOR STATIONARY STATE OPERATION

Energy Technology Data Exchange (ETDEWEB)

WEST,WP; BURRELL,KH; deGRASSIE,JS; DOYLE,EJ; GREENFIELD,CM; LASNIER,CJ; SNYDER,PB; ZENG,L

2003-08-01

OAK-B135 The quiescent H-mode (QH-mode) is an ELM-free and stationary state mode of operation discovered on DIII-D. This mode achieves H-mode levels of confinement and pedestal pressure while maintaining constant density and radiated power. The elimination of edge localized modes (ELMs) and their large divertor loads while maintaining good confinement and good density control is of interest to next generation tokamaks. This paper reports on the correlations found between selected parameters in a QH-mode database developed from several hundred DIII-D counter injected discharges. Time traces of key plasma parameters from a QH-mode discharge are shown. On DIII-D the negative going plasma current (a) indicates that the beam injection direction is counter to the plasma current direction, a common feature of all QH-modes. The D{sub {alpha}} time behavior (c) shows that soon after high powered beam heating (b) is applied, the discharge makes a transition to ELMing H-mode, then the ELMs disappear, indicating the start of the QH period that lasts for the remainder of the high power beam heating (3.5 s). Previously published work showing density and temperature profiles indicates that long-pulse, high-triangularity QH discharges develop an internal transport barrier in combination with the QH edge barrier. These discharges are known as quiescent, double-barrier discharges (QDB). The H-factor (d) and stored energy (c) rise then saturate at a constant level and the measured axial and minimum safety factors remain above 1.0 for the entire QH duration. During QDB operation the performance of the plasma can be very good, with {beta}{sub N}*H{sub 89L} product reaching 7 for > 10 energy confinement times. These discharges show promise that a stationary state can be achieved.

QUIESCENT H-MODE, AN ELM-FREE HIGH-CONFINEMENT MODE ON DIII-D WITH POTENTIAL FOR STATIONARY STATE OPERATION

International Nuclear Information System (INIS)

WEST, WP; BURRELL, KH; DeGRASSIE, JS; DOYLE, EJ; GREENFIELD, CM; LASNIER, CJ; SNYDER, PB; ZENG, L.

2003-01-01

OAK-B135 The quiescent H-mode (QH-mode) is an ELM-free and stationary state mode of operation discovered on DIII-D. This mode achieves H-mode levels of confinement and pedestal pressure while maintaining constant density and radiated power. The elimination of edge localized modes (ELMs) and their large divertor loads while maintaining good confinement and good density control is of interest to next generation tokamaks. This paper reports on the correlations found between selected parameters in a QH-mode database developed from several hundred DIII-D counter injected discharges. Time traces of key plasma parameters from a QH-mode discharge are shown. On DIII-D the negative going plasma current (a) indicates that the beam injection direction is counter to the plasma current direction, a common feature of all QH-modes. The D α time behavior (c) shows that soon after high powered beam heating (b) is applied, the discharge makes a transition to ELMing H-mode, then the ELMs disappear, indicating the start of the QH period that lasts for the remainder of the high power beam heating (3.5 s). Previously published work showing density and temperature profiles indicates that long-pulse, high-triangularity QH discharges develop an internal transport barrier in combination with the QH edge barrier. These discharges are known as quiescent, double-barrier discharges (QDB). The H-factor (d) and stored energy (c) rise then saturate at a constant level and the measured axial and minimum safety factors remain above 1.0 for the entire QH duration. During QDB operation the performance of the plasma can be very good, with β N *H 89L product reaching 7 for > 10 energy confinement times. These discharges show promise that a stationary state can be achieved

SIMULTANEOUS OBSERVATIONS OF SiO AND H2O MASERS TOWARD SYMBIOTIC STARS

International Nuclear Information System (INIS)

Cho, Se-Hyung; Kim, Jaeheon

2010-01-01

We present the results of simultaneous observations of SiO v = 1, 2, J = 1-0, 29 SiO v = 0, J = 1-0, and H 2 O 6 16 -5 23 maser lines performed with the KVN Yonsei 21 m radio telescope from 2009 November to 2010 January. We searched for these masers in 47 symbiotic stars and detected maser emission from 21 stars, giving the first time detection from 19 stars. Both SiO and H 2 O masers were detected from seven stars of which six were D-type symbiotic stars and one was an S-type star, WRAY 15-1470. In the SiO maser emission, the 28 SiO v = 1 maser was detected from 10 stars, while the v = 2 maser was detected from 15 stars. In particular, the 28 SiO v = 2 maser emission without the v = 1 maser detection was detected from nine stars with a detection rate of 60%, which is much higher than that of isolated Miras/red giants. The 29 SiO v = 0 maser emission was also detected from two stars, H 2-38 and BF Cyg, together with the 28 SiO v = 2 maser. We conclude that these different observational results between isolated Miras/red giants and symbiotic stars may be related with the presence of hot companions in a symbiotic binary system.

Stretching & Flexibility: An Interactive Encyclopedia of Stretching. [CD-ROM].

Science.gov (United States)

2002

This CD-ROM offers 140 different stretches in full-motion video sequences. It focuses on the proper techniques for overall physical fitness, injury prevention and rehabilitation, and 23 different sports (e.g., golf, running, soccer, skiing, climbing, football, and baseball). Topics include stretching for sports; stretching awareness and education…

Mode tunable p-type Si nanowire transistor based zero drive load logic inverter.

Science.gov (United States)

Moon, Kyeong-Ju; Lee, Tae-Il; Lee, Sang-Hoon; Han, Young-Uk; Ham, Moon-Ho; Myoung, Jae-Min

2012-07-25

A design platform for a zero drive load logic inverter consisting of p-channel Si nanowire based transistors, which controlled their operating mode through an implantation into a gate dielectric layer was demonstrated. As a result, a nanowire based class D inverter having a 4.6 gain value at V(DD) of -20 V was successfully fabricated on a substrate.

Identification of nanoscale structure and morphology reconstruction in oxidized a-SiC:H thin films

Energy Technology Data Exchange (ETDEWEB)

Vasin, A.V.; Rusavsky, A.V.; Nazarov, A.N.; Lysenko, V.S.; Lytvyn, P.M.; Strelchuk, V.V. [Lashkaryov Institute of Semiconductor Physics, 41 Nauki Pr., Kiev 03028 (Ukraine); Kholostov, K.I.; Bondarenko, V.P. [Belarusian State University of Informatics and Radioelectronics, 6P. Brovki Str., Minsk 220013 (Belarus); Starik, S.P. [Bakul Institute of Superhard Materials, 2 Avtzavodskaya Str., Kiev 04074 (Ukraine)

2012-11-01

Highlights: Black-Right-Pointing-Pointer Increase of magnetron discharge power results in densification of a-SiC:H thin films. Black-Right-Pointing-Pointer The denser a-SiC:H material the better resistance to oxidation by oxygen. Black-Right-Pointing-Pointer Oxidation of soft a-SiC:H films can result in increase of electric conductivity. Black-Right-Pointing-Pointer Formation of graphitic clusters was found in a-SiC:H after annealing in oxygen. - Abstract: Oxidation behavior of a-SiC:H layers deposited by radio-frequency magnetron sputtering technique was examined by Kelvin probe force microscopy (KPFM) in combination with scanning electron microscopy, Fourier-transform infra-red spectroscopy and submicron selected area Raman scattering spectroscopy. Partially oxidized a-SiC:H samples (oxidation at 600 Degree-Sign C in oxygen) were examined to clarify mechanism of the oxidation process. Nanoscale and microscale morphological defects (pits) with dimension of about 50 nm and several microns respectively have appeared after thermal treatment. KPFM measurements exhibited the surface potential of the material in micro pits is significantly smaller in comparison with surrounding material. Submicron RS measurements indicates formation of graphite-like nano-inclusions in the pit defects. We conclude that initial stage of oxidation process in a-SiC:H films takes place not homogeneously throughout the layer but it is initiated in local nanoscale regions followed by spreading over all layer.

Influences of H on the Adsorption of a Single Ag Atom on Si(111-7 × 7 Surface

Directory of Open Access Journals (Sweden)

Lin Xiu-Zhu

2009-01-01

Full Text Available Abstract The adsorption of a single Ag atom on both clear Si(111-7 × 7 and 19 hydrogen terminated Si(111-7 × 7 (hereafter referred as 19H-Si(111-7 × 7 surfaces has been investigated using first-principles calculations. The results indicated that the pre-adsorbed H on Si surface altered the surface electronic properties of Si and influenced the adsorption properties of Ag atom on the H terminated Si surface (e.g., adsorption site and bonding properties. Difference charge density data indicated that covalent bond is formed between adsorbed Ag and H atoms on 19H-Si(111-7 × 7 surface, which increases the adsorption energy of Ag atom on Si surface.

Chloride-based fast homoepitaxial growth of 4H-SiC films in a vertical hot-wall CVD

Science.gov (United States)

Guoguo, Yan; Feng, Zhang; Yingxi, Niu; Fei, Yang; Xingfang, Liu; Lei, Wang; Wanshun, Zhao; Guosheng, Sun; Yiping, Zeng

2016-06-01

Chloride-based fast homoepitaxial growth of 4H-SiC epilayers was performed on 4° off-axis 4H-SiC substrates in a home-made vertical hot-wall chemical vapor deposition (CVD) system using H2-SiH4-C2H4-HCl. The effect of the SiH4/H2 ratio and reactor pressure on the growth rate of 4H-SiC epilayers has been studied successively. The growth rate increase in proportion to the SiH4/H2 ratio and the influence mechanism of chlorine has been investigated. With the reactor pressure increasing from 40 to 100 Torr, the growth rate increased to 52 μm/hand then decreased to 47 μm/h, which is due to the joint effect of H2 and HCl etching as well as the formation of Si clusters at higher reactor pressure. The surface root mean square (RMS) roughness keeps around 1 nm with the growth rate increasing to 49 μm/h. The scanning electron microscope (SEM), Raman spectroscopy and X-ray diffraction (XRD) demonstrate that 96.7 μm thick 4H-SiC layers of good uniformity in thickness and doping with high crystal quality can be achieved. These results prove that chloride-based fast epitaxy is an advanced growth technique for 4H-SiC homoepitaxy. Project supported by the National High Technology R&D Program of China (No. 2014AA041402), the National Natural Science Foundation of China (Nos. 61474113, 61274007, 61574140), the Beijing Natural Science Foundation of China (Nos. 4132076, 4132074), the Program of State Grid Smart Grid Research Institute (No. SGRI-WD-71-14-004), and the Youth Innovation Promotion Association of CAS.

Optimized spacer layer thickness for plasmonic-induced enhancement of photocurrent in a-Si:H

Energy Technology Data Exchange (ETDEWEB)

Saleh, Z. M., E-mail: zaki.saleh@aauj.edu, E-mail: zakimsaleh@yahoo.com; Nasser, H.; Özkol, E.; Günöven, M.; Abak, K. [Middle East Technical University, Center for Solar Energy Research and Applications (GÜNAM) (Turkey); Canli, S. [Middle East Technical University, Central Laboratory (Turkey); Bek, A.; Turan, R. [Middle East Technical University, Center for Solar Energy Research and Applications (GÜNAM) (Turkey)

2015-10-15

Plasmonic interfaces consisting of silver nanoparticles of different sizes (50–100 nm) have been processed by the self-assembled dewetting technique and integrated to hydrogenated amorphous silicon (a-Si:H) using SiNx spacer layers to investigate the dependence of optical trapping enhancement on spacer layer thickness through the enhancements in photocurrent. Samples illuminated from the a-Si:H side exhibit a localized surface plasmon resonance (LSPR) that is red-shifted with the increasing particle size and broadened into the red with the increasing spacer layer thickness. The photocurrent measured in a-Si:H is not only consistent with the red-shift and broadening of the LSPR, but exhibits critical dependence on the spacer layer thickness also. The samples with plasmonic interfaces and a SiNx spacer layer exhibit appreciable enhancement of photocurrent compared with flat a-Si:H reference depending on the size of the Ag nanoparticle. Simulations conducted on one-dimensional square structures exhibit electric fields that are localized near the plasmonic structures but extend appreciably into the higher refractive index a-Si:H. These simulations produce a clear red-shift and broadening of extinction spectra for all spacer layer thicknesses and predict an enhancement in photocurrent in agreement with experimental results. The spectral dependence of photocurrent for six plasmonic interfaces with different Ag nanoparticle sizes and spacer layer thicknesses are correlated with the optical spectra and compared with the simulations to predict an optimal spacer layer thickness.

Reaction of ReH sub 7 (PPh sub 3 ) sub 2 with silanes: Preparation and characterization of the first silyl polyhydride complexes, ReH sub 6 (SiR sub 3 )(PPh sub 3 ) sub 2 (SiR sub 3 = SiPh sub 3 , SiEt sub 3 , SiHEt sub 2 )

Energy Technology Data Exchange (ETDEWEB)

Luo, Xiaoliang; Baudry, D.; Boydell, P.; Charpin, P.; Nierlich, M.; Ephritikhine, M.; Crabtree, R.H. (Yale Univ., New Haven, CT (USA) CEA-CEN Saclay, Gif-sur-Yvette (France))

1990-04-18

Reaction of silanes with ReH{sub 7}(PPh{sub 3}){sub 2} (1) gives the novel rhenium silyl hexahydride complexes ReH{sub 6}(SiR{sub 3})(PPh{sub 3}){sub 2} (SiR{sub 3} = SiPh{sub 3} (2a), SiEt{sub 3} (2b), SiHEt{sub 2} (2c)), which have been fully characterized by IR and {sup 1}H, {sup 31}P, and {sup 13}C NMR spectroscopy and, in the case of 2a, by single-crystal x-ray crystallography. The spectroscopic and x-ray diffraction data suggest that 2a-c probably have a classical nine-coordinate tricapped trigonal-prismatic structure with the two phosphine ligands and the silyl group occupying the three equatorial sites and the six hydride ligands occupying the six axial positions. 2a has been obtained in two crystalline forms, one solvated (CH{sub 2}Cl{sub 2}) and the other unsolvated, and structures were determined on both. The crystal structures of crystals of unsolvated 2a and 2a {times} CH{sub 2} Cl{sub 2} are reported. The Re-Si bond lengths, 2.474 (4) {angstrom} (2a) and 2.475 (4) {angstrom} (2a {times} CH{sub 2}Cl{sub 2}), are shorter than the sum of the covalent radii of the Re and Si atoms (2.65 {angstrom}), which is unusual for a transition-metal silyl complex with a formal d{sup 0} configuration. 35 refs., 2 figs., 4 tabs.

The H{sub 60}Si{sub 6}C{sub 54} heterofullerene as high-capacity hydrogen storage medium

Energy Technology Data Exchange (ETDEWEB)

Yong, Yongliang, E-mail: ylyong@haust.edu.cn [College of Physics and Engineering, Henan University of Science and Technology, Luoyang 471003 (China); Department of Physics, Zhejiang University, Hangzhou 310027 (China); Zhou, Qingxiao; Li, Xiaohong; Lv, Shijie [College of Physics and Engineering, Henan University of Science and Technology, Luoyang 471003 (China)

2016-07-15

With the great success in Si atoms doped C{sub 60} fullerene and the well-established methods for synthesis of hydrogenated carbon fullerenes, this leads naturally to wonder whether Si-doped fullerenes are possible for special applications such as hydrogen storage. Here by using first-principles calculations, we design a novel high-capacity hydrogen storage material, H{sub 60}Si{sub 6}C{sub 54} heterofullerene, and confirm its geometric stability. It is found that the H{sub 60}Si{sub 6}C{sub 54} heterofullerene has a large HOMO-LUMO gap and a high symmetry, indicating it is high chemically stable. Further, our finite temperature simulations indicate that the H{sub 60}Si{sub 6}C{sub 54} heterofullerene is thermally stable at 300 K. H{sub 2} molecules would enter into the cage from the Si-hexagon ring because of lower energy barrier. Through our calculation, a maximum of 21 H{sub 2} molecules can be stored inside the H{sub 60}Si{sub 6}C{sub 54} cage in molecular form, leading to a gravimetric density of 11.11 wt% for 21H{sub 2}@H{sub 60}Si{sub 6}C{sub 54} system, which suggests that the hydrogenated Si{sub 6}C{sub 54} heterofullerene could be suitable as a high-capacity hydrogen storage material.

Efficient construction of an inverted minimal H1 promoter driven siRNA expression cassette: facilitation of promoter and siRNA sequence exchange.

Directory of Open Access Journals (Sweden)

Hoorig Nassanian

2007-08-01

Full Text Available RNA interference (RNAi, mediated by small interfering RNA (siRNA, is an effective method used to silence gene expression at the post-transcriptional level. Upon introduction into target cells, siRNAs incorporate into the RNA-induced silencing complex (RISC. The antisense strand of the siRNA duplex then "guides" the RISC to the homologous mRNA, leading to target degradation and gene silencing. In recent years, various vector-based siRNA expression systems have been developed which utilize opposing polymerase III promoters to independently drive expression of the sense and antisense strands of the siRNA duplex from the same template.We show here the use of a ligase chain reaction (LCR to develop a new vector system called pInv-H1 in which a DNA sequence encoding a specific siRNA is placed between two inverted minimal human H1 promoters (approximately 100 bp each. Expression of functional siRNAs from this construct has led to efficient silencing of both reporter and endogenous genes. Furthermore, the inverted H1 promoter-siRNA expression cassette was used to generate a retrovirus vector capable of transducing and silencing expression of the targeted protein by>80% in target cells.The unique design of this construct allows for the efficient exchange of siRNA sequences by the directional cloning of short oligonucleotides via asymmetric restriction sites. This provides a convenient way to test the functionality of different siRNA sequences. Delivery of the siRNA cassette by retroviral transduction suggests that a single copy of the siRNA expression cassette efficiently knocks down gene expression at the protein level. We note that this vector system can potentially be used to generate a random siRNA library. The flexibility of the ligase chain reaction suggests that additional control elements can easily be introduced into this siRNA expression cassette.

An in-plane solid-liquid-solid growth mode for self-avoiding lateral silicon nanowires.

Science.gov (United States)

Yu, Linwei; Alet, Pierre-Jean; Picardi, Gennaro; Roca i Cabarrocas, Pere

2009-03-27

We report an in-plane solid-liquid-solid (IPSLS) mode for obtaining self-avoiding lateral silicon nanowires (SiNW) in a reacting-gas-free annealing process, where the growth of SiNWs is guided by liquid indium drops that transform the surrounding a-SiratioH matrix into crystalline SiNWs. The SiNWs can be approximately mm long, with the smallest diameter down to approximately 22 nm. A high growth rate of >10(2) nm/s and rich evolution dynamics are revealed in a real-time in situ scanning electron microscopy observation. A qualitative growth model is proposed to account for the major features of this IPSLS SiNW growth mode.

High temperature L- and H-mode confinement in JET

International Nuclear Information System (INIS)

Balet, B.; Boyd, D.A.; Campbell, D.J.

1990-01-01

The energy confinement properties of low density, high ion temperature L- and H-mode plasmas are investigated. For L-mode plasmas it is shown that, although the global confinement is independent of density, the energy confinement in the central region is significantly better at low densities than at higher densities. The improved confinement appears to be associated with the steepness of the density gradient. For the H-mode phase, although the confinement at the edge is dramatically improved, which is once again associated with the steep density gradient in the edge region, the central confinement properties are essentially the same as for the standard L-mode. The results are compared in a qualitative manner with the predictions of the ion temperature gradient instability theory and appear to be in disagreement with some aspects of this theory. (author). 13 refs, 15 figs

A low knee voltage and high breakdown voltage of 4H-SiC TSBS employing poly-Si/Ni Schottky scheme

Science.gov (United States)

Kim, Dong Young; Seok, Ogyun; Park, Himchan; Bahng, Wook; Kim, Hyoung Woo; Park, Ki Cheol

2018-02-01

We report a low knee voltage and high breakdown voltage 4H-SiC TSBS employing poly-Si/Ni dual Schottky contacts. A knee voltage was significantly improved from 0.75 to 0.48 V by utilizing an alternative low work-function material of poly-Si as an anode electrode. Also, reverse breakdown voltage was successfully improved from 901 to 1154 V due to a shrunk low-work-function Schottky region by a proposed self-align etching process between poly-Si and SiC. SiC TSBS with poly-Si/Ni dual Schottky scheme is a suitable structure for high-efficiency rectification and high-voltage blocking operation.

Papers presented at the IAEA technical committee meeting on H-mode physics

International Nuclear Information System (INIS)

TCV team

1995-11-01

The two papers contained in this report deal with ohmic H-modes and effect on confinement of edge localized modes in the TCV tokamak. They were presented by the TCV team at the 1995 IAEA technical committee meeting on H-mode physics. figs., tabs., refs

Essential elements of the high density H-mode on W7-AS

International Nuclear Information System (INIS)

McCormick, K.; Burhenn, R.; Grigull, P.

2003-01-01

The High Density H-Mode (HDH), discovered during the run-in phase of W7-AS divertor operation/1-3/, rapidly became the workhorse of the divertor program, combining optimal core behavior along with edge parameters necessary for successful operation of an Island Divertor. Its unique properties of high energy confinement along with low impurity retention and radiation localized at the edge under ELM-free steady-state conditions at high densities (to 4 x 10 20 m -3 ) and heating powers (to 1.7 MWm -3 ) make the HDH H-mode ideal for a reactor scenario, given it can be extended to higher temperatures in a larger machine. Hence, considerable effort has been invested to understand the nature of the HDH-mode in order to be able to extrapolate to next generation devices. To this end the present paper reports on experiments where two globally-similar ELM-free H-modes are compared: the classic quiescent H-mode H* where both impurity and density control are a severe problem and the HDH-mode with its contrasting steady-state behavior. Through modeling of the temporal behavior of laser-ablated aluminum spectral lines, as well as that of background impurities, it is concluded that a principle difference between the two H-modes is that of enhanced impurity diffusion in the edge gradient region of the HDH-mode. However, no direct indicators of enhanced diffusion have yet been identified. (orig.)

On the Evaluation of Gate Dielectrics for 4H-SiC Based Power MOSFETs

Directory of Open Access Journals (Sweden)

Muhammad Nawaz

2015-01-01

Full Text Available This work deals with the assessment of gate dielectric for 4H-SiC MOSFETs using technology based two-dimensional numerical computer simulations. Results are studied for variety of gate dielectric candidates with varying thicknesses using well-known Fowler-Nordheim tunneling model. Compared to conventional SiO2 as a gate dielectric for 4H-SiC MOSFETs, high-k gate dielectric such as HfO2 reduces significantly the amount of electric field in the gate dielectric with equal gate dielectric thickness and hence the overall gate current density. High-k gate dielectric further reduces the shift in the threshold voltage with varying dielectric thicknesses, thus leading to better process margin and stable device operating behavior. For fixed dielectric thickness, a total shift in the threshold voltage of about 2.5 V has been observed with increasing dielectric constant from SiO2 (k=3.9 to HfO2 (k=25. This further results in higher transconductance of the device with the increase of the dielectric constant from SiO2 to HfO2. Furthermore, 4H-SiC MOSFETs are found to be more sensitive to the shift in the threshold voltage with conventional SiO2 as gate dielectric than high-k dielectric with the presence of interface state charge density that is typically observed at the interface of dielectric and 4H-SiC MOS surface.

Correlation of nanostructure and charge transport properties of oxidized a -SiC:H films

Energy Technology Data Exchange (ETDEWEB)

Gordienko, S.O.; Nazarov, A.N.; Vasin, A.V.; Rusavsky, A.V.; Lysenko, V.S. [Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauki 41, 03028 Kyiv (Ukraine)

2012-06-15

This paper considers the influence of low temperature oxidation on structural and electrical properties of amorphous carbon-rich a -Si{sub 1-x}C{sub x}:H thin films fabricated by reactive RF magnetron sputtering. It is shown that oxidation leads to formation of SiO{sub x} matrix with graphite-like carbon inclusions. Such conductive precipitates has a strong effect on charge transport in oxidized a -Si{sub 1-x}C{sub x}:H films (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

The Considere condition and rapid stretching of linear and branched polymer melts

DEFF Research Database (Denmark)

McKinley, Gareth H; Hassager, Ole

1999-01-01

to larger Hencky strains as the number of branches is increased. Numerical computations at finite Deborah numbers also show that there is an optimal range of deformation rates over which homogeneous extensions can be maintained to large strain. We also consider other rapid homogeneous stretching...... deformations, such as biaxial and planar stretching, and show that the degree of stabilization afforded by inclusion of material with long-chain branching is a sensitive function of the imposed mode of deformation....

SiC Coating Process Development Using H-PCS in Supercritical CO2

International Nuclear Information System (INIS)

Park, Kwangheon; Jung, Wonyoung

2013-01-01

We tried SiC coating using supercritical fluids. Supercritical fluids are the substance exists over critical temperature and critical pressure. It is hard to expect that there would be a big change as single-solvent as the fluid is incompressible and the space between the molecules is almost steady. But the fluid which is being supercritical can bring a great change when it is changed its pressure near its critical point, showing its successive change in the density, viscosity, diffusion coefficient and the polarity. We have tested the 'H-PCS into SiC' coating experiment with supercritical CO 2 which has the high penetration, low viscosity as well as the high density and the high solubility that shows the property of the fluid. This experiment is for SiC coating using H-PCS in supercritical CO 2 . It shows the clear difference that the penetration of H-PCS into the SiC between dip coating method and using the supercritical CO 2 If we can make a metal cladding with SiC composites as a protective layer, the use of the cladding will be very broad and diverse. Inherent safe nuclear fuels can be possible that can stand under severe accident conditions. SiC is known to be one of a few materials that maintain very corrosion-resistant properties under tough corrosive environments. The metal cladding with SiC composites as a protective layer will be a high-tech product that can be used in many applications including chemical, material, and nuclear engineering and etc

SiFTO: An Empirical Method for Fitting SN Ia Light Curves

Science.gov (United States)

Conley, A.; Sullivan, M.; Hsiao, E. Y.; Guy, J.; Astier, P.; Balam, D.; Balland, C.; Basa, S.; Carlberg, R. G.; Fouchez, D.; Hardin, D.; Howell, D. A.; Hook, I. M.; Pain, R.; Perrett, K.; Pritchet, C. J.; Regnault, N.

2008-07-01

We present SiFTO, a new empirical method for modeling Type Ia supernova (SN Ia) light curves by manipulating a spectral template. We make use of high-redshift SN data when training the model, allowing us to extend it bluer than rest-frame U. This increases the utility of our high-redshift SN observations by allowing us to use more of the available data. We find that when the shape of the light curve is described using a stretch prescription, applying the same stretch at all wavelengths is not an adequate description. SiFTO therefore uses a generalization of stretch which applies different stretch factors as a function of both the wavelength of the observed filter and the stretch in the rest-frame B band. We compare SiFTO to other published light-curve models by applying them to the same set of SN photometry, and demonstrate that SiFTO and SALT2 perform better than the alternatives when judged by the scatter around the best-fit luminosity distance relationship. We further demonstrate that when SiFTO and SALT2 are trained on the same data set the cosmological results agree. Based on observations obtained with MegaPrime/MegaCam, a joint project of CFHT and CEA/DAPNIA, at the Canada-France-Hawaii Telescope (CFHT) which is operated by the National Research Council (NRC) of Canada, the Institut National des Sciences de l'Univers of the Centre National de la Recherche Scientifique (CNRS) of France, and the University of Hawaii. This work is based in part on data products produced at the Canadian Astronomy Data Centre as part of the Canada-France-Hawaii Telescope Legacy Survey, a collaborative project of NRC and CNRS.

Effect of surfactant concentration on the size of one-pot synthesized Si nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Lee, Su Jung; Kim, Tae Woo; Lee, Myong Euy [Dept. of Chemistry and Medical Chemistry, College of Science and Technology, Research and EducationCenter for Advanced Silicon Materials, Yonsei University, Wonju (Korea, Republic of); Cho, Hyeon Mo [University College, Yonsei University, Incheon (Korea, Republic of); Yoon, Sang Woong [Youngchang Chemical Co., LTD, Seongnam (Korea, Republic of); Ryou, Joon Sung [Advanced Technology R and D Center, SKC, Suwon (Korea, Republic of)

2015-07-15

The effect of surfactant concentration on the synthesis of Si nanoparticles (NPs) was studied. Hexyl Si NPs were synthesized using one-pot synthetic methodology with different ratios of SiCl{sub 4}:HexylSiCl{sub 3} (1:1, 1:2, 1:3, 1:6) to observe the effect of surfactant concentration on the size of Si NPs. In Fourier transform infrared spectroscopy analysis, the Si–H stretching band and the characteristic Si–O–Si bands decreased and eventually disappeared with increasing hexyltrichlorosilane concentration. This suggests that the level of oxidation decreased with excess amounts of hexyltrichlorosilane because the surface area of exposed Si NPs without hexyl capping groups was reduced. Results of transmission electron microscopy and particle size analysis showed that the average diameter of hexyl Si NPs increased slightly from low surfactant concentration (SiCl{sub 4}:HexylSiCl{sub 3} = 1:1) to high concentration (1:6). This might be caused due to the relationship between the surfactant concentration effect and the core material part effect of hexyltrichlorosilane. Agglomerated Si NPs were observed and their luminescence bands were not shifted because the Si NPs were capped by alkyl groups to prevent aggregation.

SiV color centers in Si-doped isotopically enriched {sup 12}C and {sup 13}C CVD diamonds

Energy Technology Data Exchange (ETDEWEB)

Sedov, Vadim; Bolshakov, Andrey [General Physics Institute, RAS, Moscow (Russian Federation); National Research Nuclear University MEPhI, Moscow (Russian Federation); Boldyrev, Kirill [Institute of Spectroscopy, RAS, Troitsk, Moscow (Russian Federation); Krivobok, Vladimir; Nikolaev, Sergei [Lebedev Physical Institute, RAS, Moscow (Russian Federation); Khomich, Alex [Institute of Radio Engineering and Electronics, RAS, Fryazino (Russian Federation); Khomich, Andrew [General Physics Institute, RAS, Moscow (Russian Federation); Institute of Radio Engineering and Electronics, RAS, Fryazino (Russian Federation); Krasilnikov, Anatoly [Institution ' ' ProjectCenter ITER' ' , Moscow (Russian Federation); Ralchenko, Victor [General Physics Institute, RAS, Moscow (Russian Federation); National Research Nuclear University MEPhI, Moscow (Russian Federation); Harbin Institute of Technology, Harbin (China)

2017-11-15

The effect of isotopic modification of diamond lattice on photoluminescence (PL) and optical absorption spectra of ensembles of SiV{sup -} centers was studied. Thin epitaxial diamond layers were grown by a microwave plasma CH{sub 4}/H{sub 2} mixtures using methane enriched to 99.96% for either {sup 12}C or {sup 13}C isotopes, while the Si doping was performed by adding a small percentage of silane SiH{sub 4} into the plasma. Temperature dependent SiV{sup -} ZPL spectra in absorption were measured at 3-80 K to monitor the evolution of the ZPL fine structure. It is found that the SiV{sup -} ZPL at 736.9 nm observed in PL for {sup 12}C diamond at T = 5 K, exhibits a blue shift of 1.78 meV, to 736.1 nm in {sup 13}C diamond matrix. Narrow ZPL with the width (FWHM) of 0.09 meV (21 GHz) was measured in absorption spectra at T = 3-30 K in the Si-doped {sup 13}C diamond. Besides the charged SiV{sup -} center, the absorption of the neutral SiV{sup 0} defect at 946 nm wavelength has also been detected. From changes observed in SiV{sup -} phonon band structure in PL with isotopic modification, the band at 64 meV was confirmed to be a local vibration mode (LVM) involving a Si atom. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Origin of stretched-exponential photoluminescence relaxation in size-separated silicon nanocrystals

Directory of Open Access Journals (Sweden)

Samuel L. Brown

2017-05-01

Full Text Available A detailed understanding of the photoluminescence (PL from silicon nanocrystals (SiNCs is convoluted by the complexity of the decay mechanism, including a stretched-exponential relaxation and the presence of both nanosecond and microsecond time scales. In this publication, we analyze the microsecond PL decay of size-resolved SiNC fractions in both full-spectrum (FS and spectrally resolved (SR configurations, where the stretching exponent and lifetime are used to deduce a probability distribution function (PDF of decay rates. For the PL decay measured at peak emission, we find a systematic shift and narrowing of the PDF in comparison to the FS measurements. In a similar fashion, we resolve the PL lifetime of the ‘blue’, ‘peak’, and ‘red’ regions of the spectrum and map PL decays of different photon energy onto their corresponding location in the PDF. A general trend is observed where higher and lower photon energies are correlated with shorter and longer lifetimes, respectively, which we relate to the PL line width and electron-phonon coupling.

Multi-mode interference revealed by two photon absorption in silicon rich SiO2 waveguides

International Nuclear Information System (INIS)

Manna, S.; Ramiro-Manzano, F.; Mancinelli, M.; Turri, F.; Pavesi, L.; Ghulinyan, M.; Pucker, G.

2015-01-01

Photoluminescence (PL) from Si nanocrystals (NCs) excited by two-photon absorption (TPA) has been observed in Si nanocrystal-based waveguides fabricated by plasma enhanced chemical vapor deposition. The TPA excited photoluminescence emission resembles the one-photon excited photoluminescence arising from inter-band transitions in the quantum confined Si nanocrystals. By measuring the non-linear transmission of waveguides, a large TPA coefficient of β up to 10 −8  cm/W has been measured at 1550 nm. These values of β depend on the Si NCs size and are two orders of magnitude larger than the bulk silicon value. Here, we propose to use the TPA excited visible PL emission as a tool to map the spatial intensity profile of the 1550 nm propagating optical modes in multimode waveguides. In this way, multimode interference has been revealed experimentally and confirmed through a finite element simulation

Results of the H-mode experiments with JT-60 outer and lower divertors

International Nuclear Information System (INIS)

Nakamura, Hiroo; Tsuji, Shunji; Nagami, Masayuki

1989-08-01

In JT-60, hydrogen H-mode experiments with outer and lower divertors were performed. In the outer divertor, H-mode were obtained, similar to the ones observed in the other lower/upper divertors. Its threshold absorbed power and electron density were 16 MW and 1.8 x 10 19 m -3 . In the two combined heatings with NB+ICRF and NB+LHRF, H-mode discharges are also obtained. Moreover, in new configuration of lower divertor, H-mode phases without and with ELM are obtained. Typical results of the lower divertor are shown to compare the H-mode characteristics between the two configurations. Improvement of the energy confinement time in the two divertors was limited to 10 %. Analyses on ballooning/interchange instabilities were carried out with precise equlibria of JT-60. These results showed that the both modes were enough stable. (author)

4H-SiC surface energy tuning by nitrogen up-take

Energy Technology Data Exchange (ETDEWEB)

Pitthan, E., E-mail: eduardo.pitthan@ufrgs.br [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, NJ 08854 (United States); PGMICRO, UFRGS, 91509-900, Porto Alegre, RS (Brazil); Amarasinghe, V.P. [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, NJ 08854 (United States); Xu, C.; Gustafsson, T. [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, NJ 08854 (United States); Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854 (United States); Stedile, F.C. [PGMICRO, UFRGS, 91509-900, Porto Alegre, RS (Brazil); Instituto de Química, UFRGS, 91509-900, Porto Alegre, RS (Brazil); Feldman, L.C. [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, NJ 08854 (United States); Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854 (United States)

2017-04-30

Highlights: • Wettability modification of 4H-SiC as a function of nitrogen adsorption is reported. • SiC surface energy was significantly reduced as nitrogen was incorporated. • Modifications obtained were proved to be inert to etching and stable against time. • Variable control of SiC surface provides new opportunities for biomedical applications. - Abstract: Surface energy modification and surface wettability of 4H silicon carbide (0001) as a function of nitrogen adsorption is reported. The surface wettability is shown to go from primarily hydrophilic to hydrophobic and the surface energy was significantly reduced with increasing nitrogen incorporation. These changes are investigated by x-ray photoelectron spectroscopy and contact angle measurements. The surface energy was quantitatively determined by the Fowkes model and interpreted primarily in terms of the variation of the surface chemistry with nitrogen coverage. Variable control of SiC surface energies with a simple and controllable atomic additive such as nitrogen that is inert to etching, stable against time, and also effective in electrical passivation, can provide new opportunities for SiC biomedical applications, where surface wetting plays an important role in the interaction with the biological interfaces.

Probing the limits of Si:P δ-doped devices patterned by a scanning tunneling microscope in a field-emission mode

Energy Technology Data Exchange (ETDEWEB)

Rudolph, M.; Carr, S. M.; Ten Eyck, G.; Dominguez, J.; Carroll, M. S.; Bussmann, E. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Subramania, G. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87131 (United States); Lilly, M. P. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Pluym, T.

2014-10-20

Recently, a single atom transistor was deterministically fabricated using phosphorus in Si by H-desorption lithography with a scanning tunneling microscope (STM). This milestone in precision, achieved by operating the STM in the conventional tunneling mode, typically utilizes slow (∼10{sup 2} nm{sup 2}/s) patterning speeds. By contrast, using the STM in a high-voltage (>10 V) field-emission mode, patterning speeds can be increased by orders of magnitude to ≳10{sup 4} nm{sup 2}/s. We show that the rapid patterning negligibly affects the functionality of relatively large micron-sized features, which act as contacting pads for these devices. For nanoscale structures, we show that the resulting electrical transport is consistent with the donor incorporation chemistry constraining the electrical dimensions to a scale of 10 nm even though the pattering spot size is 40 nm.

Excluded Volume Effects in Gene Stretching

OpenAIRE

Lam, Pui-Man

2002-01-01

We investigate the effects excluded volume on the stretching of a single DNA in solution. We find that for small force F, the extension h is not linear in F but proportion to F^{\\chi}, with \\chi=(1-\

Confined longitudinal acoustic phonon modes in free-standing Si membranes coherently excited by femtosecond laser pulses

OpenAIRE

Hudert, Florian; Bruchhausen, Axel; Issenmann, Daniel; Schecker, Olivier; Waitz, Reimar; Erbe, Artur; Scheer, Elke; Dekorsy, Thomas; Mlayah, Adnen; Huntzinger, Jean-Roch

2009-01-01

In this Rapid Communication we report the first time-resolved measurements of confined acoustic phonon modes in free-standing Si membranes excited by fs laser pulses. Pump-probe experiments using asynchronous optical sampling reveal the impulsive excitation of discrete acoustic modes up to the 19th harmonic order for membranes of two different thicknesses. The modulation of the membrane thickness is measured with fm resolution. The experimental results are compared with a theoretical model in...

Structural changes in C–S–H gel during dissolution: Small-angle neutron scattering and Si-NMR characterization

Energy Technology Data Exchange (ETDEWEB)

Trapote-Barreira, Ana, E-mail: anatrapotebarreira@gmail.com [Institute of Environmental Assessment and Water Research (IDAEA), Barcelona 08034, Catalonia (Spain); Porcar, Lionel [National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899 (United States); Large Scale Structure Group, Institut Laue Langevin, Grenoble (France); Cama, Jordi; Soler, Josep M. [Institute of Environmental Assessment and Water Research (IDAEA), Barcelona 08034, Catalonia (Spain); Allen, Andrew J. [National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899 (United States)

2015-06-15

Flow-through experiments were conducted to study the calcium–silicate–hydrate (C–S–H) gel dissolution kinetics. During C–S–H gel dissolution the initial aqueous Ca/Si ratio decreases to reach the stoichiometric value of the Ca/Si ratio of a tobermorite-like phase (Ca/Si = 0.83). As the Ca/Si ratio decreases, the solid C–S–H dissolution rate increases from (4.5 × 10{sup −} {sup 14} to 6.7 × 10{sup −} {sup 12}) mol m{sup −} {sup 2} s{sup −} {sup 1}. The changes in the microstructure of the dissolving C–S–H gel were characterized by small-angle neutron scattering (SANS) and {sup 29}Si magic-angle-spinning nuclear magnetic resonance ({sup 29}Si-MAS NMR). The SANS data were fitted using a fractal model. The SANS specific surface area tends to increase with time and the obtained fit parameters reflect the changes in the nanostructure of the dissolving solid C–S–H within the gel. The {sup 29}Si MAS NMR analyses show that with dissolution the solid C–S–H structure tends to a more ordered tobermorite structure, in agreement with the Ca/Si ratio evolution.

Field profile tailoring in a-Si:H radiation detectors

International Nuclear Information System (INIS)

Fujieda, I.; Cho, G.; Conti, M.; Drewery, J.; Kaplan, S.N.; Perez-Mendez, V.; Quershi, S.; Wildermuth, D.; Street, R.A.

1990-03-01

The capability of tailoring the field profile in reverse-biased a-Si:H diodes by doping and/or manipulating electrode shapes opens a way to many interesting device structures. Charge collection in a-Si:H radiation detectors is improved for high LET particle detection by inserting thin doped layers into the i-layer of the usual p-i-n diode. This buried p-i-n structure enables us to apply higher reverse-bias and the electric field is enhanced in the mid i-layer. Field profiles of the new structures are calculated and the improved charge collection process is discussed. Also discussed is the possibility of field profile tailoring by utilizing the fixed space charges in i-layers and/or manipulating electrode shapes of the reverse-biased p-i-n diodes. 10 refs., 7 figs

Progress in quantifying the edge physics of the H mode regime in DIII-D

International Nuclear Information System (INIS)

Groebner, R.J.; Baker, D.R.; Burrell, K.H.

2001-01-01

Edge conditions in DIII-D are being quantified in order to provide insight into the physics of the H mode regime. Several studies show that electron temperature is not the key parameter that controls the L-H transition. Gradients of edge temperature and pressure are much more promising candidates for elements of such parameters. They systematically increase during the L phases of discharges which make a transition to H mode, and these increases are typically larger than the increases in the underlying quantities. The quality of H mode confinement is strongly correlated with the height of the H mode pedestal for the pressure. The gradient of the pressure is limited by MHD modes, in particular by ideal kink ballooning modes with finite mode number n. For a wide variety of discharges, the width of the barrier for electron pressure is well described by a relationship that is proportional to (β p ped ) 1/2 . A new regime of confinement, called the quiescent H mode, which provides steady state operation with no ELMs, low radiated power and normal H mode confinement, has been discovered. A coherent edge MHD mode provides adequate particle transport to control the plasma density while permitting the pressure pedestal to remain almost identical to that observed in ELMing discharges. (author)

Synergistic effects of iodine and silver ions co-implanted in 6H-SiC

Science.gov (United States)

Kuhudzai, R. J.; Malherbe, J. B.; Hlatshwayo, T. T.; van der Berg, N. G.; Devaraj, A.; Zhu, Z.; Nandasiri, M.

2015-12-01

Motivated by the aim of understanding the release of fission products through the SiC coating of fuel kernels in modern high temperature nuclear reactors, a fundamental investigation is conducted to understand the synergistic effects of implanted silver (Ag) and iodine (I) in 6H-SiC. The implantation of the individual species, as well as the co-implantation of 360 keV ions of I and Ag at room temperature in 6H-SiC and their subsequent annealing behaviour has been investigated by Secondary Ion Mass Spectrometry (SIMS), Atom Probe Tomography (APT) and X-ray Photoelectron Spectroscopy (XPS). SIMS and APT measurements indicated the presence of Ag in the co-implanted samples after annealing at 1500 °C for 30 h in sharp contrast to the samples implanted with Ag only. In samples implanted with Ag only, complete loss of the implanted Ag was observed. However, for I only implanted samples, some iodine was retained. APT of annealed co-implanted 6H-SiC showed clear spatial association of Ag and I clusters in SiC, which can be attributed to the observed I assisted retention of Ag after annealing. Such detailed studies will be necessary to identify the fundamental mechanism of fission products migration through SiC coatings.

Correlation of H-mode barrier width and neutral penetration length

International Nuclear Information System (INIS)

Groebner, R.J.; Mahdavi, M.A.; Leonard, A.W.

2003-01-01

Pedestal studies in DIII-D find a good correlation between the width of the H-mode density barrier and the neutral penetration length. These results are obtained by comparing experimental density profiles to the predictions of an analytic model for the profile, obtained from the particle continuity equations for electrons and deuterium atoms. In its range of validity (edge temperature between 40-500 eV), the analytic model quantitatively predicts the observed decrease of the width as the pedestal density increases, the observed strong increase of the gradient of the density as the pedestal density increases and the observation that L-mode and H-mode profiles with the same pedestal density have very similar shapes. The width of the density barrier, measured from the edge of the electron temperature barrier, is the lower limit for the observed width of the temperature barrier. These results support the hypothesis that particle fueling provides the dominant control for the size of the H-mode transport barrier. (author)

Comparison of L- and H-mode plasma edge fluctuations in MAST

International Nuclear Information System (INIS)

Dudson, B D; Dendy, R O; Kirk, A; Meyer, H; Counsell, G F

2005-01-01

Edge turbulence measurements from a reciprocating Langmuir probe in MAST are presented. A comparison of the range/standard deviation (R/S), growth of range, first moment and differencing and rescaling methods for calculating the Hurst exponent is made. The differencing and rescaling method is found to be the most useful for identifying scaling over long time-periods. A comparison is made between L-mode, dithering H-mode and H-mode plasma edge turbulence and evidence for self-similarity is found. Tests are performed and it is demonstrated that the results are due to properties of the data, and are not artefacts of the methods. A comparison of Hurst exponent methods with the autocorrelation function and power spectrum is used to demonstrate the presence of long-time correlation in L-mode data, and the absence of long-time correlation in the case of dithering H-mode

[Current trends in the effects of stretching: application to physical exercise in the workplace].

Science.gov (United States)

Eguchi, Yasumasa; Ohta, Masanori; Yamato, Hiroshi

2011-09-01

A review of the Survey on the State of Employees' Health by the Ministry of Health, Labour and Welfare (2008) shows that the most commonly implemented aspect as an activity of worksite health promotion is "Health counseling", and the second is "Workplace physical exercise." Physical exercise, "Taiso", is acceptable and sustainable for workers, as it is easy to do in a group or alone. Various modes of stretching are implemented for workplace physical exercise. However, articles suggesting negative or contradictory effects of stretching have increased in recent years. Several review articles have revealed that static stretching may induce impairments of muscle power performance and no stretching will prevent or reduce muscle soreness after exercise. There are various aims of workplace physical exercise, so we have to consider the situational method when we apply stretching to occupational health.

Nonuniformities of electrical resistivity in undoped 6H-SiC wafers

International Nuclear Information System (INIS)

Li, Q.; Polyakov, A.Y.; Skowronski, M.; Sanchez, E.K.; Loboda, M.J.; Fanton, M.A.; Bogart, T.; Gamble, R.D.

2005-01-01

Chemical elemental analysis, temperature-dependent Hall measurements, deep-level transient spectroscopy, and contactless resistivity mapping were performed on undoped semi-insulating (SI) and lightly nitrogen-doped conducting 6H-SiC crystals grown by physical vapor transport (PVT). Resistivity maps of commercial semi-insulating SiC wafers revealed resistivity variations across the wafers between one and two orders of magnitude. Two major types of variations were identified. First is the U-shape distribution with low resistivity in the center and high in the periphery of the wafer. The second type had an inverted U-shape distribution. Secondary-ion-mass spectrometry measurements of the distribution of nitrogen concentration along the growth axis and across the wafers sliced from different locations of lightly nitrogen-doped 6H-SiC boules were conducted. The measured nitrogen concentration gradually decreased along the growth direction and from the center to the periphery of the wafers. This change gives rise to the U-like distribution of resistivity in wafers of undoped SI-SiC. The concentrations of deep electron traps exhibited similar dependence. Compensation of nitrogen donors by these traps can result in the inverted U-like distribution of resistivity. Possible reasons for the observed nonuniformities include formation of a (0001) facet in PVT growth coupled with orientation-dependent nitrogen incorporation, systematic changes of the gas phase composition, and increase of the deposition temperature during boule growth

Surface damage versus defect microstructures in He and H ion co-implanted Si{sub 3}N{sub 4}/Si

Energy Technology Data Exchange (ETDEWEB)

Zhu, F. [School of Science, Tianjin University, Tianjin 300072 (China); Liu, C.L., E-mail: liuchanglong@tju.edu.cn [School of Science, Tianjin University, Tianjin 300072 (China); Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Institute of Advanced Materials Physics Faculty of Science, Tianjin 300072 (China); Gao, Y.J.; Wang, Z.; Wang, J. [School of Science, Tianjin University, Tianjin 300072 (China)

2012-09-01

Cz n-type Si (1 0 0) wafers with a top Si{sub 3}N{sub 4} layer of about 170 nm in thickness were sequentially implanted with 40 keV He ions at a fluence of 5 Multiplication-Sign 10{sup 16}/cm{sup 2} and 35 keV H ions at fluences of 1 Multiplication-Sign 10{sup 15}, 5 Multiplication-Sign 10{sup 15} and 1 Multiplication-Sign 10{sup 16}/cm{sup 2}, respectively. Creation and evolution of surface damage as well as micro-defects have been studied. Our results clearly show that production of surface damage depends strongly on both the H implant fluence and annealing temperature. Only blistering or localized exfoliation of the top Si{sub 3}N{sub 4} layer has been observed for post H implantation at fluences of 1 Multiplication-Sign 10{sup 15} and 5 Multiplication-Sign 10{sup 15}/cm{sup 2} upon 800 Degree-Sign C annealing. However, serious surface exfoliation has been found for the 1 Multiplication-Sign 10{sup 16}/cm{sup 2} H co-implanted samples after annealing at 450 Degree-Sign C and above. The exfoliation occurs at a depth of about 360 nm from the surface, which is obviously larger than the He or H ion range. Moreover, the exfoliated craters show clear two-step structures. Cross-sectional transmission electron microscopy (XTEM) observations reveal formation of micro-cracks in Si bulk and along the original interface, which is mainly responsible for the observed surface phenomena. The formation mechanism of micro-cracks has been discussed in combination of He and H implant-induced defects, impurities as well as their interactions upon annealing.

Acute effect of different stretching methods on isometric muscle strength

Directory of Open Access Journals (Sweden)

Gabriel Vasconcellos de Lima Costa e Silva

2014-03-01

This study investigated the acute effect of static stretching methods (SS and proprioceptive neuromuscular facilitation (PNF on the static muscle strength (SMS. Eleven young male subjects with strength training experience, performed 3 tests with a 48h interval between them, randomly selected, where each one subject carried out all procedures: a hand grip without stretching; b hand grip preceded by static stretching of wrist flexors muscles; c hand grip preceded by PNF stretching of wrist flexors muscles. The Shapiro-Wilk test verified the normality of data, and a one-way ANOVA with repeated measures, followed by Tukey’s post hoc test, evaluated the differences between the groups. The significance was set at p 0.05. In conclusion, both stretching methods had caused negative effects on isometric strength, reducing its levels.

Hot filament-dissociation of (CH3)3SiH and (CH3)4Si, probed by vacuum ultra violet laser time of flight mass spectroscopy.

Science.gov (United States)

Sharma, Ramesh C; Koshi, Mitsuo

2006-11-01

The decomposition of trimethylsilane and tetramethylsilane has been investigated for the first time, using hot wire (catalytic) at various temperatures. Trimethylsilane is catalytic-dissociated in these species SiH(2), CH(3)SiH, CH(3), CH(2)Si. Time of flight mass spectroscopy signal of these species are linearly increasing with increasing catalytic-temperature. Time of flight mass spectroscopy (TOFMS) signals of (CH(3))(3)SiH and photodissociated into (CH(3))(2)SiH are decreasing with increasing hot filament temperature. TOFMS signal of (CH(3))(4)Si is decreasing with increasing hot wire temperature, but (CH(3))(3)Si signal is almost constant with increasing the temperature. We calculated activation energies of dissociated species of the parental molecules for fundamental information of reaction kinetics for the first time. Catalytic-dissociation of trimethylsilane, and tetramethylsilane single source time of flight coupled single photon VUV (118 nm) photoionization collisionless radicals at temperature range of tungsten filament 800-2360 K. The study is focused to understand the fundamental information on reaction kinetics of these molecules at hot wire temperature, and processes of catalytic-chemical vapour deposition (Cat-CVD) technique which could be implemented in amorphous and crystalline SiC semiconductors thin films.

ELM triggering conditions for the integrated modeling of H-mode plasmas

International Nuclear Information System (INIS)

Pankin, A.Y.; Schnack, D.D.; Bateman, G.; Kritz, A.H.; Brennan, D.P.; Snyder, P.B.; Voitsekhovitch, I.; Kruger, S.; Janeschitz, G.; Onjun, T.; Pacher, G.W.; Pacher, H.D.

2004-01-01

Recent advances in the integrated modeling of ELMy (edge localized mode) H-mode plasmas are presented. A model for the H-mode pedestal and for the triggering of ELMs predicts the height, width, and shape of the H-mode pedestal and the frequency and width of ELMs. Formation of the pedestal and the L-H transition is the direct result of E r x B flow shear suppression of anomalous transport. The periodic ELM crashes are triggered by either the ballooning or peeling MHD instabilities. The BALOO, DCON, and ELITE ideal MHD stability codes are used to derive a new parametric expression for the peeling-ballooning threshold. The new dependence for the peeling-ballooning threshold is implemented in the ASTRA transport code. Results of integrated modeling of DIII-D like discharges are presented and compared with experimental observations. The results from the ideal MHD stability codes are compared with results from the resistive MHD stability code NIMROD. (authors)

Ballooning stability analysis of JET H-mode discharges

International Nuclear Information System (INIS)

O'Brien, D.P.; Galvao, R.; Keilhacker, M.; Lazzaro, E.; Watkins, M.L.

1989-01-01

Previous studies of the stability of a large aspect ratio model equilibrium to ideal MHD ballooning modes have shown that across the bulk of the plasma there exist two marginally stable values of the pressure gradient parameter α. These define an unstable zone which separates the first (small α) stable region from the second (large α) stable region. Close to the separatrix, however, the first and second regions can coalesce when the surface averaged current density, Λ, exceeds a critical value. The plasma in this region is then stable to ballooning modes at all values of the pressure gradient. In this paper we extend these results to JET H-mode equilibria using a finite aspect ratio ballooning formalism, and assess the relevance of ideal ballooning stability in these discharges. In particular we analyse shot 15894 at time 56 sec. which is 1.3 s into the H-phase. (author) 4 refs., 4 figs

Measurement and Analysis of Composition and Depth Profile of H in Amorphous Si1−xCx:H Films

International Nuclear Information System (INIS)

Wei, Hua; Shu-De, Yao; Kun, Wang; Zhi-Bo, Ding

2008-01-01

Composition in amorphous Si 1−X C x :H heteroepitaxial thin films on Si (100) by plasma enhanced chemical vapour deposition (PECVD) is analysed. The unknown x (0.45–0.57) and the depth profile of hydrogen in the thin films are characterized by Rutherford backscattering spectrum (RBS), resonance-nuclear reaction analysis (R-NRA) and elastic recoil detection (ERD), respectively. In addition, the depth profile of hydrogen in the unannealed thin films is compared to that of the annealed thin films with rapid thermal annealing (RTA) or laser spike annealing (LSA) in nitrogen atmosphere. The results indicate that the stoichiometric amorphous SiC can be produced by PECVD when the ratio of CH 4 /SiH 4 is approximately equal to 25. The content of hydrogen decreases suddenly from 35% to 1% after 1150° C annealing. RTA can reduce hydrogen in SiC films effectively than LSA. (cross-disciplinary physics and related areas of science and technology)

Growth of fcc(111) Dy multi-height islands on 6H-SiC(0001) graphene

International Nuclear Information System (INIS)

Hershberger, M T; Hupalo, M; Thiel, P A; Tringides, M C

2013-01-01

Graphene based spintronic devices require an understanding of the growth of magnetic metals. Rare earth metals have large bulk magnetic moments so they are good candidates for such applications, and it is important to identify their growth mode. Dysprosium was deposited on epitaxial graphene, prepared by thermally annealing 6H-SiC(0001). The majority of the grown islands have triangular instead of hexagonal shapes. This is observed both for single layer islands nucleating at the top of incomplete islands and for fully completed multi-height islands. We analyze the island shape distribution and stacking sequence of successively grown islands to deduce that the Dy islands have fcc(111) structure, and that the triangular shapes result from asymmetric barriers to corner crossing. (paper)

Coherent edge fluctuation measurements in H-mode discharges on JFT-2M

International Nuclear Information System (INIS)

Nagashima, Y; Shinohara, K; Hoshino, K; Ejiri, A; Tsuzuki, K; Ido, T; Uehara, K; Kawashima, H; Kamiya, K; Ogawa, H; Yamada, T; Shiraiwa, S; Ohara, S; Takase, Y; Asakura, N; Oyama, N; Fujita, T; Ide, S; Takenaga, H; Kusama, Y; Miura, Y

2004-01-01

Results of coherent edge fluctuation measurements using three diagnostics (a reciprocating Langmuir probe, a two channel O-mode reflectometer, and fast magnetic probes) in H-mode discharges on JFT-2M are presented. In discharges in which a high recycling steady (HRS) H-mode phase is obtained through a transient phase with slightly enhanced D α intensity, two types of coherent fluctuations are observed. The higher frequency mode (around 300 kHz) is the high frequency mode (HFM) observed in the HRS H-mode (Kamiya K et al 2003 9th IAEA Tech. Meeting H-mode Workshop Topic B-14). The lower frequency mode has a frequency of around 80 kHz. The HFM is detected by a Langmuir probe over a wide region in the SOL, as well as by the reflectometer and magnetic probes. However, the HFM is not detected by the higher frequency (38 GHz) channel of the reflectometer after the HRS transition, suggesting that the HFM is not located deeply inside the plasma. The 80 kHz mode is detected by both channels of the reflectometer and by a Langmuir probe, but not by magnetic probes, suggesting that it is an electrostatic mode. In contrast to the HFM, the 80 kHz mode is detected by the Langmuir probe only near the separatrix during the transient phase, which leads to either the HRS phase or the ELMy phase, and is similar to the fluctuations reported in Shinohara K et al (1998 J. Plasma Fusion Res. 74 607)

Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors

Science.gov (United States)

Abe, Y.; Umeda, T.; Okamoto, M.; Kosugi, R.; Harada, S.; Haruyama, M.; Kada, W.; Hanaizumi, O.; Onoda, S.; Ohshima, T.

2018-01-01

We present single photon sources (SPSs) embedded in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). They are formed in the SiC/SiO2 interface regions of wet-oxidation C-face 4H-SiC MOSFETs and were not found in other C-face and Si-face MOSFETs. Their bright room-temperature photoluminescence (PL) was observed in the range from 550 to 750 nm and revealed variable multi-peak structures as well as variable peak shifts. We characterized a wide variety of their PL spectra as the inevitable variation of local atomic structures at the interface. Their polarization dependence indicates that they are formed at the SiC side of the interface. We also demonstrate that it is possible to switch on/off the SPSs by a bias voltage of the MOSFET.

Behaviour of impurities during the H-mode in JET

International Nuclear Information System (INIS)

Gianella, R.; Behringer, K.; Denne, B.; Gottardi, N.; Hellermann, M. von; Morgan, P.D.; Pasini, D.; Stamp, M.F.

1989-01-01

In additionally-heated tokamak discharges, the H-mode phases are reported to display, together with a better energy confinement, a longer global containment time for particles. In particular, steep gradients of electron density and temperature are sustained in the outer region of the plasma column. This enhanced performance is observed especially in discharges in which the activity of edge localized modes (ELMs) is low or absent. High confinement and accumulation of metallic impurities, which quickly give raise to terminal disruptions have been described under similar conditions. In JET H-modes very long impurity confinement times are also observed. However the experimental condition is somewhat more favourable since quiescent H-modes are obtained lasting much longer than the energy confinement times and the radiation from metals is generally negligible. The dominant impurities are normally carbon and oxygen, the latter generally accounting for half or more of the power radiated from the bulk plasma. During the X-point operation the effective influx of carbon into the discharge, which is normally in close correlation with that of deuterium, is substantially reduced while the influx of oxygen, whose production mechanisms is believed to be of a chemical nature, does not show significant variations. (author) 5 refs., 4 figs

A buffer-layer/a-SiO{sub x}:H(p) window-layer optimization for thin film amorphous silicon based solar cells

Energy Technology Data Exchange (ETDEWEB)

Park, Jinjoo; Dao, Vinh Ai [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Shin, Chonghoon [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Hyeongsik [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Minbum; Jung, Junhee [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Doyoung [School of Electricity and Electronics, Ulsan College West Campus, Ulsan 680-749 (Korea, Republic of); Yi, Junsin, E-mail: yi@yurim.skku.ac.kr [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2013-11-01

Amorphous silicon based (a-Si:H-based) solar cells with a buffer-layer/boron doped hydrogenated amorphous silicon oxide (a-SiO{sub x}:H(p)) window-layer were fabricated and investigated. In the first part, in order to reduce the Schottky barrier height at the fluorine doped tin oxide (FTO)/a-SiO{sub x}:H(p) window-layer heterointerface, we have used buffer-layer/a-SiO{sub x}:H(p) for the window-layer, in which boron doped hydrogenated amorphous silicon (a-Si:H(p)) or boron doped microcrystalline silicon (μc-Si:H(p)) is introduced as a buffer layer between the a-SiO{sub x}:H(p) and FTO of the a-Si:H-based solar cells. The a-Si:H-based solar cell using a μc-Si:H(p) buffer-layer shows the highest efficiency compared to the optimized bufferless, and a-Si:H(p) buffer-layer in the a-Si:H-based solar cells. This highest performance was attributed not only to the lower absorption of the μc-Si:H(p) buffer-layer but also to the lower Schottky barrier height at the FTO/window-layer interface. Then, we present the dependence of the built-in potential (V{sub bi}) and blue response of the devices on the inversion of activation energy (ξ) of the a-SiO{sub x}:H(p), in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. The enhancement of both V{sub bi} and blue response is observed, by increasing the value of ξ. The improvement of V{sub bi} and blue response can be ascribed to the enlargement of the optical gap of a-SiO{sub x}:H(p) films in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. Finally, the conversion efficiency was increased by 22.0%, by employing μc-Si:H(p) as a buffer-layer and raising the ξ of the a-SiO{sub x}:H(p), compared to the optimized bufferless case, with a 10 nm-thick a-SiO{sub x}:H(p) window-layer. - Highlights: • Low Schottky barrier height benefits fill factor, and open-circuit voltage (V{sub oc}). • High band gap is beneficial for short-circuit current density (J{sub sc}). • Boron doped microcrystalline silicon is a suitable buffer-layer for

Characterization and formation of NV centers in 3 C , 4 H , and 6 H SiC: An ab initio study

Science.gov (United States)

Csóré, A.; von Bardeleben, H. J.; Cantin, J. L.; Gali, A.

2017-08-01

Fluorescent paramagnetic defects in solids have become attractive systems for quantum information processing in recent years. One of the leading contenders is the negatively charged nitrogen-vacancy (NV) defect in diamond with visible emission, but an alternative solution in a technologically mature host is an immediate quest for many applications in this field. It has been recently found that various polytypes of silicon carbide (SiC), that are standard semiconductors with wafer scale technology, can host a NV defect that could be an alternative qubit candidate with emission in the near infrared region. However, there is much less known about this defect than its counterpart in diamond. The inequivalent sites within a polytype and the polytype variations offer a family of NV defects. However, there is an insufficient knowledge on the magneto-optical properties of these configurations. Here we carry out density functional theory calculations, in order to characterize the numerous forms of NV defects in the most common polytypes of SiC including 3 C , 4 H , and 6 H , and we also provide new experimental data in 4 H SiC. Our calculations mediate the identification of individual NV qubits in SiC polytypes. In addition, we discuss the formation of NV defects in SiC, providing detailed ionization energies of NV defects in SiC, which reveals the critical optical excitation energies for ionizing these qubits in SiC. Our calculations unravel the challenges to produce NV defects in SiC with a desirable spin bath.

Chemical Mechanical Polishing Optimization for 4H-SiC

National Research Council Canada - National Science Library

Neslen, Craig

2000-01-01

.... Preliminary chemical mechanical polishing (CMP) studies of 1 3/8" 4H-SiC wafers were performed in an attempt to identify the polishing parameter values that result in a maximum material removal rate and thus reduce substrate polishing time...

Statistical study of TCV disruptivity and H-mode accessibility

International Nuclear Information System (INIS)

Martin, Y.; Deschenaux, C.; Lister, J.B.; Pochelon, A.

1997-01-01

Optimising tokamak operation consists of finding a path, in a multidimensional parameter space, which leads to the desired plasma characteristics and avoids hazards regions. Typically the desirable regions are the domain where an L-mode to H-mode transition can occur, and then, in the H-mode, where ELMs and the required high density< y can be maintained. The regions to avoid are those with a high rate of disruptivity. On TCV, learning the safe and successful paths is achieved empirically. This will no longer be possible in a machine like ITER, since only a small percentage of disrupted discharges will be tolerable. An a priori knowledge of the hazardous regions in ITER is therefore mandatory. This paper presents the results of a statistical analysis of the occurrence of disruptions in TCV. (author) 4 figs

Hydrogen behaviour study in plasma facing a-C:H and a-SiC:H hydrogenated amorphous materials for fusion reactors

International Nuclear Information System (INIS)

Barbier, Gauzelin

1997-01-01

Plasma facing components of controlled fusion test devices (tokamaks) are submitted to several constraints (irradiation, high temperatures). The erosion (physical sputtering and chemical erosion) and the hydrogen recycling (retention and desorption) of these materials influence many plasma parameters and thus affect drastically the tokamak running. Firstly, we will describe the different plasma-material interactions. It will be pointed out, how erosion and hydrogen recycling are strongly related to both chemical and physical properties of the material. In order to reduce this interactions, we have selected two amorphous hydrogenated materials (a-C:H and a-SiC:H), which are known for their good thermal and chemical qualities. Some samples have been then implanted with lithium ions at different fluences. Our materials have been then irradiated with deuterium ions at low energy. From our results, it is shown that both the lithium implantation and the use of an a-SiC:H substrate can be benefit in enhancing the hydrogen retention. These results were completed with thermal desorption studies of these materials. It was evidenced that the hydrogen fixation was more efficient in a -SiC:H than in a-C:H substrate. Results in good agreement with those described above have been obtained by exposing a-C:H and a-SiC:H samples to the scrape off layer of the tokamak of Varennes (TdeV, Canada). A modeling of hydrogen diffusion under irradiation has been also proposed. (author)

High efficiency 4H-SiC betavoltaic power sources using tritium radioisotopes

Energy Technology Data Exchange (ETDEWEB)

Thomas, Christopher; Portnoff, Samuel [Widetronix Corp., Ithaca, New York 14850 (United States); Spencer, M. G. [Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14850 (United States)

2016-01-04

Realization of an 18.6% efficient 4H-silicon carbide (4H-SiC) large area betavoltaic power source using the radioisotope tritium is reported. A 200 nm 4H-SiC P{sup +}N junction is used to collect high-energy electrons. The electron source is a titanium tritide (TiH{sup 3}{sub x}) foil, or an integrated titanium tritide region formed by the diffusion of tritium into titanium. The specific activity of the source is directly measured. Dark current measured under short circuit conditions was less than 6.1 pA/cm{sup 2}. Samples measured with an external tritium foil produced an open circuit voltage of 2.09 V, short circuit current of 75.47 nA/cm{sup 2}, fill factor of 0.86, and power efficiency of 18.6%. Samples measured with an integrated source produced power efficiencies of 12%. Simulations were done to determine the beta spectrum (modified by self absorption) exiting the source and the electron hole pair generation function in the 4H-SiC. The electron-hole pair generation function in 4H-SiC was modeled as a Gaussian distribution, and a closed form solution of the continuity equation was used to analyze the cell performance. The effective surface recombination velocity in our samples was found to be 10{sup 5}–10{sup 6 }cm/s. Our analysis demonstrated that the surface recombination dominates the performance of a tritium betavoltaic device but that using a thin P{sup +}N junction structure can mitigate some of the negative effects.

Critical edge parameters for H-mode transition in DIII-D

International Nuclear Information System (INIS)

Groebner, R.J.; Carlstrom, T.N.

1997-11-01

Measurements in DIII-D of edge ion and electron temperatures (T i and T e ) just prior to the transition to H-mode are presented. A fitting model based on a hyperbolic tangent function is used in the analysis. The edge temperatures are observed to increase during the L-phase with the application of auxiliary heating. The temperature rise is small if the H-mode power threshold is close to the Ohmic power level in the absence of auxiliary heating and is large if the H-mode threshold is well above the Ohmic power level. The edge temperatures just prior to the transition are approximately proportional to the toroidal magnetic field Bt for the field either in the reversed or forward direction. However, for the reversed magnetic field, the temperatures are at least a factor of two higher than for the forward direction

Effect of pressure on the Raman-active modes of zircon (ZrSiO4): a first-principles study

Science.gov (United States)

Sheremetyeva, Natalya; Cherniak, Daniele J.; Watson, E. Bruce; Meunier, Vincent

2018-02-01

Density-functional theory (DFT) was employed in a first-principles study of the effects of pressure on the Raman-active modes of zircon (ZrSiO4), using both the generalized gradient and local density approximations (GGA and LDA, respectively). Beginning with the equilibrium structure at zero pressure, we conducted a calibration of the effect of pressure in a manner procedurally similar to an experimental calibration. For pressures between 0 and 7 GPa, we find excellent qualitative agreement of frequency-pressure slopes partial ω /partial P calculated from GGA DFT with results of previous experimental studies. In addition, we were able to rationalize the ω vs. P behavior based on details of the vibrational modes and their atomic displacements. Most of the partial ω /partial P slopes are positive as expected, but the symmetry of the zircon lattice also results in two negative slopes for modes that involve slight shearing and rigid rotation of SiO4 tetrahedra. Overall, LDA yields absolute values of the frequencies of the Raman-active modes in good agreement with experimental values, while GGA reproduces the shift in frequency with pressure especially well.

(Zn-doped PVA)/n-4H-SiC (MPS)

Indian Academy of Sciences (India)

2018-05-23

May 23, 2018 ... A comparative study on dielectric behaviours of Au/(Zn-doped. PVA)/n-4H-SiC .... To form MPS structures, the prepared PVA (Zn nanoparticle- doped) ..... 95 2885. [26] MacCallum J R and Vincent C A 1989 Polymer electrolyte.

Ohmic H-mode and confinement in TCV

International Nuclear Information System (INIS)

Moret, J.M.; Anton, M.; Barry, S.

1995-01-01

The unique flexibility of TCV for the creation of a wide variety of plasma shapes has been exploited to address some aspects of tokamak physics for which the shape may play an important role. The electron energy confinement time in limited ohmic L-mode plasmas whose elongation and triangularity have been varied, has been observed to improve with elongation as κ 0.5 but to degrade with triangularity as (1-0.8 δ), for fixed safety factor. Ohmic H-modes have been obtained in several diverted and limited configurations, with some of the diverted discharges featuring large ELMs whose effects on the global confinement have been quantified. These effects depend on the configuration: in double null (DN) equilibria, a single ELM expels on average 2%, 6% and 2.5% of the particle, impurity and thermal energy content respectively, whilst in single null (SN) configurations, the corresponding numbers are 3.5%, 7% and 9%, indicative of larger ELM effects. The presence or absence of large ELMs in DN discharges has been actively controlled in a single discharge by alternately forcing one or other of the two X-points to lie on the separatrix, permitting stationary density and impurity content (Z eff ≅1.6) in long H-modes (1.5 s). (author) 9 figs., 9 refs

Progress in qualifying the edge physics of the H-mode regime in DIII-D

International Nuclear Information System (INIS)

Groebner, R.J.; Baker, D.R.; Boedo, J.A.

2001-01-01

Edge conditions in DIII-D are being quantified in order to provide insight into the physics of the H-mode regime. Electron temperature is not the key parameter that controls the L-H transition. Gradients of edge temperature and pressure are much more promising candidates for such parameters. The quality of H-mode confinement is strongly correlated with the height of the H-mode pedestal for the pressure. The gradient of the pressure appears to be controlled by MHD modes, in particular by kink-ballooning modes with finite mode number n. For a wide variety of discharges, the width of the barrier is well described with a relationship that is proportional to (β p ped ) 1/2 . An attractive regime of confinement has been discovered which provides steady-state operation with no ELMs, low impurity content and normal H-mode confinement. A coherent edge MHD-mode evidently provides adequate particle transport to control the plasma density and impurity content while permitting the pressure pedestal to remain almost identical to that observed in ELMing discharges. (author)

Studies on the substrate mediated vibrational excitation of CO/Si(100) by means of SFG spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Han, Xu; Lass, Kristian; Balgar, Thorsten; Hasselbrink, Eckart [Universitaet Duisburg-Essen, Fachbereich Chemie, 45117 Essen (Germany)

2009-07-01

Vibrational excitations of adsorbates play an important role in chemical reaction dynamics. In the past decade CO on solid surfaces was chosen as adequate model system for studying vibrational relaxation dynamics. Our work is focused on the energy dissipation of vibrationally excited CO adsorbed on a silicon surface by means of IR/Vis sum frequency generation (SFG) spectroscopy. Here we present studies on substrate mediated excitation of vibrational modes of CO on Si(100) induced by UV radiation. We suppose the observation of highly excited internal stretch vibrations of CO caused by hot electrons generated within the silicon substrate.

Theory of anomalous transport in H-mode plasmas

International Nuclear Information System (INIS)

Itoh, S.; Itoh, K.; Fukuyama, A.; Yagi, M.

1993-05-01

Theory of the anomalous transport is developed, and the unified formula for the L- and H-mode plasmas is presented. The self-sustained ballooning-mode turbulence is solved in the presence of the inhomogeneous radial electric field, E r . Reductions in transport coefficients and the amplitude and decorrelation length of fluctuations due to E r ' are quantitatively analyzed. Combined with the E r -bifurcation model, the thickness of the transport barrier is simultaneously determined. (author)

Simulation of electron thermal transport in H-mode discharges

International Nuclear Information System (INIS)

Rafiq, T.; Pankin, A. Y.; Bateman, G.; Kritz, A. H.; Halpern, F. D.

2009-01-01

Electron thermal transport in DIII-D H-mode tokamak plasmas [J. L. Luxon, Nucl. Fusion 42, 614 (2002)] is investigated by comparing predictive simulation results for the evolution of electron temperature profiles with experimental data. The comparison includes the entire profile from the magnetic axis to the bottom of the pedestal. In the simulations, carried out using the automated system for transport analysis (ASTRA) integrated modeling code, different combinations of electron thermal transport models are considered. The combinations include models for electron temperature gradient (ETG) anomalous transport and trapped electron mode (TEM) anomalous transport, as well as a model for paleoclassical transport [J. D. Callen, Nucl. Fusion 45, 1120 (2005)]. It is found that the electromagnetic limit of the Horton ETG model [W. Horton et al., Phys. Fluids 31, 2971 (1988)] provides an important contribution near the magnetic axis, which is a region where the ETG mode in the GLF23 model [R. E. Waltz et al., Phys. Plasmas 4, 2482 (1997)] is below threshold. In simulations of DIII-D discharges, the observed shape of the H-mode edge pedestal is produced when transport associated with the TEM component of the GLF23 model is suppressed and transport given by the paleoclassical model is included. In a study involving 15 DIII-D H-mode discharges, it is found that with a particular combination of electron thermal transport models, the average rms deviation of the predicted electron temperature profile from the experimental profile is reduced to 9% and the offset to -4%.

Application of divertor cryopumping to H-mode density control in DIII-D

International Nuclear Information System (INIS)

Mahdavi, M.A.; Ferron, J.R.; Hyatt, A.W.

1993-11-01

In this paper we describe the method and the results of experiments where a unique in-vessel cryopump-baffle system was used to control density of H-mode plasmas. We were able to independently regulate current and density of ELMing H-mode plasmas, each over a range of factor two, and measure the H-mode confinement scaling with plasma density and current. With a modest pumping speed of ∼40 kl/s, particle exhaust rates as high as 2 x 10 22 atom/s -1 have been observed

System-Level Demonstration of a Dynamically Reconfigured Burst-Mode Link Using a Nanosecond Si-Photonic Switch

DEFF Research Database (Denmark)

Forencich, Alex; Kamchevska, Valerija; Dupuis, Nicolas

2018-01-01

Using a novel FPGA-based network emulator, microsecond-scale packets with 12.5-20-Gb/s data are generated, routed through a nanosecond Si-photonic switch, and received in a fast-locking burst-mode receiver. Error-free links with <382-ns system-level switching are shown....

Effects of germane flow rate in electrical properties of a-SiGe:H films for ambipolar thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Dominguez, Miguel, E-mail: madominguezj@gmail.com [Centro de Investigaciones en Dispositivos Semiconductores, Instituto de Ciencias, Benemerita Universidad Autonoma de Puebla (BUAP), Puebla 72570 (Mexico); Rosales, Pedro, E-mail: prosales@inaoep.mx [National Institute for Astrophysics, Optics and Electronics (INAOE), Electronics Department, Luis Enrique Erro No. 1, Puebla 72840 (Mexico); Torres, Alfonso [National Institute for Astrophysics, Optics and Electronics (INAOE), Electronics Department, Luis Enrique Erro No. 1, Puebla 72840 (Mexico); Flores, Francisco [Centro de Investigaciones en Dispositivos Semiconductores, Instituto de Ciencias, Benemerita Universidad Autonoma de Puebla (BUAP), Puebla 72570 (Mexico); Molina, Joel; Moreno, Mario [National Institute for Astrophysics, Optics and Electronics (INAOE), Electronics Department, Luis Enrique Erro No. 1, Puebla 72840 (Mexico); Luna, Jose [Centro de Investigaciones en Dispositivos Semiconductores, Instituto de Ciencias, Benemerita Universidad Autonoma de Puebla (BUAP), Puebla 72570 (Mexico); Orduña, Abdu [Centro de Investigación en Biotecnología Aplicada (CIBA), IPN, Tlaxcala, Tlaxcala 72197 (Mexico)

2014-07-01

In this work, the study of germane flow rate in electrical properties of a-SiGe:H films is presented. The a-SiGe:H films deposited by low frequency plasma-enhanced chemical vapor deposition at 300 °C were characterized by Fourier transform infrared spectroscopy, measurements of temperature dependence of conductivity and UV–visible spectroscopic ellipsometry. After finding the optimum germane flow rate conditions, a-SiGe:H films were deposited at 200 °C and analyzed. The use of a-SiGe:H films at 200 °C as active layer of low-temperature ambipolar thin-film transistors (TFTs) was demonstrated. The inverted staggered a-SiGe:H TFTs with Spin-On Glass as gate insulator were fabricated. These results suggest that there is an optimal Ge content in the a-SiGe:H films that improves its electrical properties. - Highlights: • As the GeH{sub 4} flow rate increases the content of oxygen decreases. • Ge-H bonds show the highest value in a-SiGe:H films with GeH{sub 4} flow of 105 sccm. • Films with GeH{sub 4} flow of 105 sccm show the highest activation energy. • An optimum incorporation of germanium is obtained with GeH{sub 4} flow rate of 105 sccm. • At 200 °C the optimum condition of the a-SiGe:H films remain with no changes.

Depth profiles of H and O in thin films of a-Si:H

International Nuclear Information System (INIS)

Sie, S.H.; Ryan, C.J.

1985-01-01

Detailed depth profiles of hydrogen and oxygen were measured, in thin film samples of a-Si:H produced under varying conditions, using the reaction 1 H( 19 F,α γ) 16 O in the vicinity of the resonance at E( 19 F) = 6.417 MeV to profile hydrogen, and resonant elastic α scattering near the resonance at Eα = 3.0359 MeV to profile oxygen. Contrasting results reflecting the different fabrication conditions were obtained and these were correlated with the measured electrical properties

Depth dependent modification of optical constants arising from H+ implantation in n-type 4H-SiC measured using coherent acoustic phonons

Directory of Open Access Journals (Sweden)

Andrey Baydin

2016-06-01

Full Text Available Silicon carbide (SiC is a promising material for new generation electronics including high power/high temperature devices and advanced optical applications such as room temperature spintronics and quantum computing. Both types of applications require the control of defects particularly those created by ion bombardment. In this work, modification of optical constants of 4H-SiC due to hydrogen implantation at 180 keV and at fluences ranging from 1014 to 1016 cm−2 is reported. The depth dependence of the modified optical constants was extracted from coherent acoustic phonon spectra. Implanted spectra show a strong dependence of the 4H-SiC complex refractive index depth profile on H+ fluence. These studies provide basic insight into the dependence of optical properties of 4H silicon carbide on defect densities created by ion implantation, which is of relevance to the fabrication of SiC-based photonic and optoelectronic devices.

A new physics-based self-heating effect model for 4H-SiC MESFETs

International Nuclear Information System (INIS)

Cao Quanjun; Zhang Yimen; Zhang Yuming

2008-01-01

A new self-heating effect model for 4H-SiC MESFETs is proposed based on a combination of an analytical and a computer aided design (CAD) oriented drain current model. The circuit oriented expressions of 4H-SiC low-field electron mobility and incomplete ionization rate, which are related to temperature, are presented in this model, which are used to estimate the self-heating effect of 4H-SiC MESFETs. The verification of the present model is made, and the good agreement between simulated results and measured data of DC I – V curves with the self-heating effect is obtained. (condensed matter: electronic structure, electrical, magnetic, and optical propertiesx)

Study of surface exfoliation on 6H-SiC induced by H{sub 2}{sup +} implantation

Energy Technology Data Exchange (ETDEWEB)

Zhang, L. [Department of Physics, School of Science, Lanzhou University of Technology, Lanzhou 730050 (China); Li, B.S., E-mail: b.s.li@impcas.ac.cn [Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

2017-03-01

The effect of lattice damage generated by the H{sub 2}{sup +}-implantation on exfoliation efficiency in 6H-SiC wafers is investigated. <0001> 6H-SiC wafers were implanted with 134 keV H{sub 2}{sup +} ions to ion fluences from 1.5×10{sup 16} to 5×10{sup 16} H{sub 2}{sup +} cm{sup −2} and subsequently annealed at temperatures from 973 K to 1373 K. The samples were studied by a combination of optical microscopy and transmission electron microscopy. Only after 1373 K annealing for 15 min, blisters and exfoliation occur on the H{sub 2}{sup +}-implanted sample surface. With increasing the implantation fluences from 1.5×10{sup 16} to 3.75×10{sup 16} H{sub 2}{sup +} cm{sup −2}, the exfoliation mean size decreases, while the exfoliation density increases. For the highest fluence of 5×10{sup 16} H{sub 2}{sup +} cm{sup −2}, seldom exfoliations occur on the sample surface. Microstructure analysis shows that exfoliation efficiency is largely controlled by the H{sub 2}{sup +}-implantation-induced lattice damage. The depth of the microcrack is related to the implantation fluence. The effect of implantation fluence on dislocation loops, platelet nucleation and growth is investigated.

The influence of gas pressure on E↔H mode transition in argon inductively coupled plasmas

Science.gov (United States)

Zhang, Xiao; Zhang, Zhong-kai; Cao, Jin-xiang; Liu, Yu; Yu, Peng-cheng

2018-03-01

Considering the gas pressure and radio frequency power change, the mode transition of E↔H were investigated in inductively coupled plasmas. It can be found that the transition power has almost the same trend decreasing with gas pressure, whether it is in H mode or E mode. However, the transition density increases slowly with gas pressure from E to H mode. The transition points of E to H mode can be understood by the propagation of electromagnetic wave in the plasma, while the H to E should be illustrated by the electric field strength. Moreover, the electron density, increasing with the pressure and power, can be attributed to the multiple ionization, which changes the energy loss per electron-ion pair created. In addition, the optical emission characteristics in E and H mode is also shown. The line ratio of I750.4 and I811.5, taken as a proxy of the density of metastable state atoms, was used to illustrate the hysteresis. The 750.4 nm line intensity, which has almost the same trend with the 811.5 nm line intensity in H mode, both of them increases with power but decreases with gas pressure. The line ratio of 811.5/750.4 has a different change rule in E mode and H mode, and at the transition point of H to E, it can be one significant factor that results in the hysteresis as the gas pressure change. And compared with the 811.5 nm intensity, it seems like a similar change rule with RF power in E mode. Moreover, some emitted lines with lower rate constants don't turn up in E mode, while can be seen in H mode because the excited state atom density increasing with the electron density.

Conductivity And Thermal Stability of Solid Acid Composites CsH2PO4 /NaH2PO4/ SiO2

International Nuclear Information System (INIS)

Norsyahida Mohammad; Abu Bakar Mohamad; Abu Bakar Mohamad; Abdul Amir Hassan Kadhum

2016-01-01

Solid acid composites CsH 2 PO 4 / NaH 2 PO 4 / SiO 2 with different mole ratios of CsH 2 PO 4 and NaH 2 PO 4 to SiO 2 were synthesized and characterized. Preliminary infrared measurements of CsH 2 PO 4 and its composites indicated that hydrogen bonds breaking and formation were detected between 1710 to 2710 cm -1 , while the rotation of phosphate tetrahedral anions occurred between 900 and 1200 cm -1 . The superprotonic transition of CsH 2 PO 4 / NaH 2 PO 4 / SiO 2 composite was identified at superprotonic temperatures between 230 and 260 degree Celcius, under atmospheric pressure. This study reveals higher conductivity values for composites with higher CsH 2 PO 4 (CDP) content. Solid acid composite CDP 613 appeared as the composite with the highest conductivity that is 7.2x10 -3 S cm -1 at 230 degree Celcius. Thermal stability of the solid acid composites such as temperature of dehydration, melting and decomposition were investigated. The addition of NaH 2 PO 4 lowers the dehydration temperature of the solid acid composites. (author)

The analysis of structural and electronic environments of silicon network in HWCVD deposited a-SiC:H films

International Nuclear Information System (INIS)

Swain, Bibhu P.

2007-01-01

Hydrogenated amorphous silicon carbon alloys (a-SiC:H) films were deposited by hot wire chemical vapour deposition (HWCVD) using SiH 4 and C 2 H 2 as precursor gases. a-SiC:H films were characterized by Fourier Transform Infrared (FTIR) spectroscopy, Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Solid-state plasmon of Si network shifts from 19.2 to 20.5 eV by varying C 2 H 2 flow rate from 2 to 10 sccm. Incorporation of carbon content changes the valence band structure and s orbital is more dominant than sp and p orbital with carbon incorporation

The Effect of Plasma Shape on H-Mode Pedestal Characteristics on DIII-D

International Nuclear Information System (INIS)

T.H. Osborne; J.R. Ferron; R.J. Groebner; L.L. Lao; A.W. Leonard; R. Maingi; R.L. Miller; A.D. Turnbull; M.R. Wade; J.G. Watkins

1999-01-01

The characteristics of the H-mode are studied in discharges with varying triangularity and squareness. The pressure at the top of the H-mode pedestal increases strongly with triangularity primarily due to an increase in the margin by which the edge pressure gradient exceeds the ideal ballooning mode first stability limit. Two models are considered for how the edge may exceed the ballooning mode limit. In one model [1], access to the ballooning mode second stable regime allows the edge pressure gradient and associated bootstrap current to continue to increase until an edge localized, low toroidal mode number, ideal kink mode is destabilized. In the second model [2], the finite width of the H-mode transport barrier, and diamagnetic effects raise the pressure gradient limit above the ballooning mode limit. We observe a weak inverse dependence of the width of the H-mode transport barrier, Δ, on triangularity relative to the previously obtained [3] scaling Δ ∞ (β P PED ) 1/2 . The energy loss for Type I ELMs increases with triangularity in proportion to the pedestal energy increase. The temperature profile is found to respond stiffly to changes in T PED at low temperature, while at high temperature the response is additive. The response of the density profile is also found to play a role in the response of the total stored energy to changes in the W PED

Implantation temperature and thermal annealing behavior in H{sub 2}{sup +}-implanted 6H-SiC

Energy Technology Data Exchange (ETDEWEB)

Li, B.S., E-mail: b.s.li@impcas.ac.cn; Wang, Z.G.; Jin, J.F.

2013-12-01

The effects of hydrogen implantation temperature and annealing temperature in 6H-SiC are studied by the combination of Rutherford backscattering in channeling geometry (RBS/C), high-resolution X-ray diffraction (HRXRD) and scanning electron microscopy (SEM). 6H-SiC wafers were implanted with 100 keV H{sub 2}{sup +} ions to a fluence of 2.5 × 10{sup 16} H{sub 2}{sup +} cm{sup −2} at room temperature (RT), 573 K and 773 K. Post-implantation, the samples were annealing under argon gas flow at different temperatures from 973 K to 1373 K for isochronal annealing (15 min). The relative Si disorder at the damage peak for the sample implanted at RT decreases gradually with increasing annealing temperature. However, the reverse annealing effect is found for the samples implanted at 573 K and 773 K. As-implantation, the intensity of in-plane compressive stress is the maximum as the sample was implanted at RT, and is the minimum as the sample was implanted at 573 K. The intensity of in-plane compressive stress for the sample implanted at RT decreases gradually with increasing annealing temperature, while the intensities of in-plane compressive stress for the sample implanted at 573 K and 773 K show oscillatory changes with increasing annealing temperature. After annealing at 1373 K, blisters and craters occur on the sample surface and their average sizes increase with increasing implantation temperature.

Rapid thermally annealed plasma deposited SiNx:H thin films: Application to metal-insulator-semiconductor structures with Si, In0.53Ga0.47As, and InP

International Nuclear Information System (INIS)

Martil, I.; Prado, A. del; San Andres, E.; Gonzalez Diaz, G.; Martinez, F.L.

2003-01-01

We present in this article a comprehensive study of rapid thermal annealing (RTA) effects on the physical properties of SiN x :H thin films deposited by the electron cyclotron resonance plasma method. Films of different as-deposited compositions (defined in this article as the nitrogen to silicon ratio, x=N/Si) were analyzed: from Si-rich (x=0.97) to N-rich (x=1.6) films. The evolution of the composition, bonding configuration, and paramagnetic defects with the annealing temperature are explained by means of different network bond reactions that take place depending on the as-deposited film composition. All the analyzed films release hydrogen, while Si-rich and near-stoichiometric (x=1.43) ones also lose nitrogen upon annealing. These films were used to make Al/SiN x :H/semiconductor devices with Si, In 0.53 Ga 0.47 As, and InP. After RTA treatments, the electrical properties of the three different SiN x :H/semiconductor interfaces can be explained, noting the microstructural modifications that SiN x :H experiences upon annealing

Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition

OpenAIRE

Alassaad, Kassem; Soulière, Véronique; Cauwet, François; Peyre, Hervé; Carole, Davy; Kwasnicki, Pawel; Juillaguet, Sandrine; Kups, Thomas; Pezoldt, Jörg; Ferro, Gabriel

2014-01-01

8 pages; International audience; In this work, we report on the addition of GeH4 gas during homoepitaxial growth of 4H-SiC by chemical vapour deposition. Ge introduction does not affect dramatically the surface morphology and defect density though it is accompanied with Ge droplets accumulation at the surface. The Ge incorporation level inside the 4H-SiC matrix, ranging from few 1017 to few 1018 at.cm-3, was found to be mainly affected by the growth temperature and GeH4 flux. Other growth par...

VH mode accessibility and global H-mode properties in previous and present JET configurations

Energy Technology Data Exchange (ETDEWEB)

Jones, T T.C.; Ali-Arshad, S; Bures, M; Christiansen, J P; Esch, H P.L. de; Fishpool, G; Jarvis, O N; Koenig, R; Lawson, K D; Lomas, P J; Marcus, F B; Sartori, R; Schunke, B; Smeulders, P; Stork, D; Taroni, A; Thomas, P R; Thomsen, K [Commission of the European Communities, Abingdon (United Kingdom). JET Joint Undertaking

1994-07-01

In JET VH modes, there is a distinct confinement transition following the cessation of ELMs, observed in a wide variety of tokamak operating conditions, using both NBI and ICRF heating methods. Important factors which influence VH mode accessibility such as magnetic configuration and vessel conditions have been identified. The new JET pumped divertor configuration has much improved plasma shaping control and power and particle exhaust capability and should permit exploitation of plasmas with VH confinement properties over an even wider range of operating regimes, particularly at high plasma current; first H-modes have been obtained in the 1994 JET operating period and initial results are reported. (authors). 7 refs., 6 figs.

Switching characteristic and capacitance analysis of a-Si:H pinpin photodiodes for visible range telecommunications

Science.gov (United States)

Fantoni, A.; Fernandes, M.; Louro, P.; Vieira, M.

2016-05-01

The device under study is an a-SiC:H/a-Si:H pinpin photodiodes produced by PECVD (Plasma Enhanced Chemical Vapour Deposition) and has a structure that consists of a p-i'(a-SiC:H)-n/p-i(a-Si:H)-n heterostructure with low conductivity doped layers. This device structure has been demonstrated useful in optical communications that use the WDM technique to encode multiple signals in the visible light range. We present in this work experimental results about C-V measurements of the device under complex conditions of illumination. Also it is presented an analysis based on the transient response of the device when illuminated by a pulsed light, with and without optical bias superposition. Rising and decaying times of the collected photocurrent will be outlined under the different conditions. A simulation study outlines the role played by each pin substructure on the response speed and gives some hint on the possible optimization of this device.

Ball-Pen Probe Measurements in L-Mode and H-Mode on ASDEX Upgrade

Czech Academy of Sciences Publication Activity Database

Adámek, Jiří; Horáček, Jan; Müller, H. W.; Rohde, V.; Ionita, C.; Schrittwieser, R.; Mehlmann, F.; Kurzan, B.; Stöckel, Jan; Dejarnac, Renaud; Weinzettl, Vladimír; Seidl, Jakub; Peterka, M.

2010-01-01

Roč. 50, č. 9 (2010), s. 854-859 ISSN 0863-1042. [International Workshop on Electric Probes in Magnetized Plasmas/8th./. Innsbruck, 21.09.2009-24.09.2009] R&D Projects: GA AV ČR KJB100430901; GA ČR GA202/09/1467 Institutional research plan: CEZ:AV0Z20430508 Keywords : Tokamak * ball- pen probe * electron temperature * L-mode * H-mode * ELMs Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.006, year: 2010 http://onlinelibrary.wiley.com/doi/10.1002/ctpp.201010145/pdf

Positive Temperature Coefficient of Breakdown Voltage in 4H-SiC PN Junction Rectifiers

National Research Council Canada - National Science Library

Neudeck, Philip

1998-01-01

...-suited SiC polytype for power device implementation. This paper reports the first experimental measurements of stable positive temperature coefficient behavior observed in 4H-SiC pn junction rectifiers...

U3Si2 behavior in H2O: Part I, flowing steam and the effect of hydrogen

Science.gov (United States)

Wood, E. Sooby; White, J. T.; Grote, C. J.; Nelson, A. T.

2018-04-01

Recent interest in U3Si2 as an advanced light water reactor fuel has driven assessment of numerous properties, but characterization of its response to H2O environments is absent from the literature. The behavior of U3Si2 in H2O containing atmospheres is investigated and presented in a two-part series of articles aimed to understand the degradation mechanism of U3Si2 in H2O. Reported here are thermogravimetric data for U3Si2 exposed to flowing steam at 250-470 °C. Additionally the response of U3Si2 to flowing Ar-6% H2 from 350 to 400 °C is presented. Microstructural degradation is observed following hours of exposure at 350 °C in steam. U3Si2 undergoes pulverization on the timescale of minutes when temperatures are increased above 400 °C. This mechanism is accelerated in flowing Ar-H2 at the same temperatures.

Ohmic H-mode and confinement in TCV

International Nuclear Information System (INIS)

Moret, J.-M.; Anton, M.; Barry, S.

1995-01-01

The unique flexibility of TCV for the creation of a wide variety of plasma shapes has been exploited to address some aspects of tokamak physics for which the shape may play an important role. The electron energy confinement time in limited ohmic L-mode plasmas whose elongation and triangularity have been varied (κ = 1.3 - 1.9, δ 0.1 - 0.7) has been observed to improve with elongation as κ 0.5 but to degrade with triangularity as (1 - 0.8 δ), for fixed safety factor. Ohmic H-modes have been obtained in several diverted and limited configurations, with some of the diverted discharges featuring large ELMs whose effects on the global confinement have been quantified. These effects depend on the configuration: in double null (DN) equilibria, a single ELM expels on average 2%, 6% and 2.5% of the particle, impurity and thermal energy content respectively, whilst in single null (SN) configurations, the corresponding numbers are 3.5%, 7% and 9%, indicative of larger ELM effects. The presence of absence of large ELMs in DN discharges has been actively controlled in a single discharge by alternately forcing one or other of the two X-points to lie on the separatrix, permitting stationary density and impurity content (Z eff ∼ 1.6) in long H-modes (1.5 s). (Author)

Confinement improvement in H-mode-like plasmas in helical systems

International Nuclear Information System (INIS)

Itoh, K.; Sanuki, H.; Itoh, S.; Fukuyama, A.; Yagi, M.

1993-06-01

The reduction of the anomalous transport due to the inhomogeneous radial electric field is theoretically studied for toroidal helical plasmas. The self-sustained interchange-mode turbulence is analysed for the system with magnetic shear and magnetic hill. For the system with magnetic well like conventional stellarators, the ballooning mode turbulence is studied. Influence of the radial electric field inhomogeneity on the transport coefficients and fluctuations are quantitatively shown. Unified theory of the transport coefficients in the L-mode and H-mode-like plasmas are presented. (author)

Large-scale uniform bilayer graphene prepared by vacuum graphitization of 6H-SiC(0001) substrates

Science.gov (United States)

Wang, Qingyan; Zhang, Wenhao; Wang, Lili; He, Ke; Ma, Xucun; Xue, Qikun

2013-03-01

We report on the preparation of large-scale uniform bilayer graphenes on nominally flat Si-polar 6H-SiC(0001) substrates by flash annealing in ultrahigh vacuum. The resulting graphenes have a single thickness of one bilayer and consist of regular terraces separated by the triple SiC bilayer steps on the 6H-SiC(0001) substrates. In situ scanning tunneling microscopy reveals that suppression of pit formation on terraces and uniformity of SiC decomposition at step edges are the key factors to the uniform thickness. By studying the surface morphologies prepared under different annealing rates, it is found that the annealing rate is directly related to SiC decomposition, diffusion of the released Si/C atoms and strain relaxation, which together determine the final step structure and density of defects.

Hydrogen desorption properties of MgH2–Ni–Ni2Si composites prepared by mechanochemical method

International Nuclear Information System (INIS)

Shimada, Motoki; Higuchi, Eiji; Inoue, Hiroshi

2013-01-01

Highlights: ► The MgH 2 –Ni composite showed fast hydrogen desorption rate at 250 °C. ► The MgH 2 –Ni–Ni 2 Si composite showed fast hydrogen desorption rate at 220 °C. ► Nanocrystalline Mg 2 Ni and Mg 2 Si were formed between Mg and adjacent Ni or Si. ► Ni 2 Si did not form any alloys and work as a catalyst. -- Abstract: To improve hydrogen desorbability of Mg, some composites were prepared from MgH 2 , Ni and Ni 2 Si mixed powders by the mechanochemical method. The MgH 2 –Ni(2 mol%)–Ni 2 Si(1 mol%) composite was slower in hydrogen desorption rate at 250 °C than the MgH 2 –Ni(2 mol%) composite, while the hydrogen desorption rate at 220 °C for the former was faster than that for the latter. The XRD pattern of the MgH 2 –Ni(2 mol%) composite showed that after hydrogen desorption at 400 °C small diffraction peaks assigned to Mg 2 Ni were observed with peaks assigned to Mg. They shifted to smaller angles after hydrogen absorption at 250 °C and come back to the original positions after hydrogen desorption at 250 °C, suggesting reversible hydrogen absorption/desorption of Mg 2 Ni. In contrast, Ni 2 Si was not changed over the whole processes. These results indicated that Ni 2 Si worked as a catalyst for hydrogen desorption, leading to the improvement of desorbability at 220 °C

Mechanical stretch modulates microRNA 21 expression, participating in proliferation and apoptosis in cultured human aortic smooth muscle cells.

Directory of Open Access Journals (Sweden)

Jian tao Song

Full Text Available OBJECTIVES: Stretch affects vascular smooth muscle cell proliferation and apoptosis, and several responsible genes have been proposed. We tested whether the expression of microRNA 21 (miR-21 is modulated by stretch and is involved in stretch-induced proliferation and apoptosis of human aortic smooth muscle cells (HASMCs. METHODS AND RESULTS: RT-PCR revealed that elevated stretch (16% elongation, 1 Hz increased miR-21 expression in cultured HASMCs, and moderate stretch (10% elongation, 1 Hz decreased the expression. BrdU incorporation assay and cell counting showed miR-21 involved in the proliferation of HASMCs mediated by stretch, likely by regulating the expression of p27 and phosphorylated retinoblastoma protein (p-Rb. FACS analysis revealed that the complex of miR-21 and programmed cell death protein 4 (PDCD4 participated in regulating apoptosis with stretch. Stretch increased the expression of primary miR-21 and pre-miR-21 in HASMCs. Electrophoretic mobility shift assay (EMSA demonstrated that stretch increased NF-κB and AP-1 activities in HASMCs, and blockade of AP-1 activity by c-jun siRNA significantly suppressed stretch-induced miR-21 expression. CONCLUSIONS: Cyclic stretch modulates miR-21 expression in cultured HASMCs, and miR-21 plays important roles in regulating proliferation and apoptosis mediated by stretch. Stretch upregulates miR-21 expression at least in part at the transcription level and AP-1 is essential for stretch-induced miR-21 expression.

The silicon neighborhood across the a-Si:H to {mu}c-Si transition by X-ray absorption spectroscopy (XAS)

Energy Technology Data Exchange (ETDEWEB)

Tessler, Leandro R.; Wang Qi; Branz, Howard M

2003-04-22

We report a synchrotron X-ray absorption spectroscopy study of the average neighborhood of Si near the transition from a-Si:H to {mu}c-Si on wedge-shaped samples prepared by hot-wire CVD in a chamber using a movable shutter. The thickness of the wedge varies from 30 to 160 nm. Nucleation of {mu}c-Si occurs at a critical thickness of approximately 100 nm. X-Ray absorption was measured at the Si K-edge (1.84 keV) by total electron photoemission yield. The absorption oscillations in the EXAFS region are very similar to all along the wedge. Analysis indicates an average tetrahedral first neighbor shell with radial disorder decreasing with crystallization. In the near-edge (XANES) region multiple scattering effects appear at the onset of crystallinity. Unlike single crystal silicon, these effects involve only double scattering within the first neighbor shell, indicating an ill-formed second shell in {mu}c-Si.

Modification of Au and Si(111):H surfaces towards biological sensing

Energy Technology Data Exchange (ETDEWEB)

Zhang, Xin; Rappich, Joerg [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Institut fuer Si Photovoltaik, Berlin (Germany); Sun, Guoguang; Hinrichs, Karsten; Rosu, Dana; Esser, Norbert [ISAS-Institute for Analytical Sciences, Department Berlin (Germany); Hovestaedt, Marc; Ay, Bernhard; Volkmer, Rudolf [Institut fuer Medizinische Immunologie, Charite Berlin, Berlin (Germany); Janietz, Silvia [Fraunhofer-Institut fuer Angewandte Polymerforschung, Golm (Germany)

2010-07-01

Within the topics to grow functional organic surfaces for biosensors we grafted carboxylbenzene, aminobenzene and maleimidobenzene onto Au and H-terminated Si surfaces by electrochemical deposition from 4-carboxylbenzene-diazonium tetrafluoroborate (4-CBDT), 4-aminobenzene-diazonium tetrafluoroborate (4-ABDT) and 4-maleimidobenzene-diazonium tetrafluoroborate (4-MBDT).The electron injection to the diazonium compound in solution (cathodic current) leads to the formation of intermediate radicals, which further react with the surface (Au or Si:H) and the respective molecule is grafted onto the surface.The aim was to functionalise these surfaces for further reaction with corresponding amines, acids or cysteine-modified peptides. Ex-situ infrared spectroscopic ellipsometry (IRSE) was applied to inspect the surface species before and after the functionalisation.

Solid-state microwave annealing of ion-implanted 4H-SiC

International Nuclear Information System (INIS)

Sundaresan, Siddarth G.; Tian, Yong-lai; Ridgway, Mark C.; Mahadik, Nadeemullah A.; Qadri, Syed B.; Rao, Mulpuri V.

2007-01-01

Solid-state microwave annealing was performed at temperatures up to 2120 deg, C for 30 s on ion-implanted 4H-SiC in N 2 ambient. The surface roughness in the samples annealed without a surface cap at 1950 deg, C is 2.65 nm for 10 μm x 10 μm atomic force microscopy scans. The sheet resistances measured on Al + - and P + -implanted 4H-SiC, annealed by microwaves, are lower than the best conventional furnace annealing results reported in literature. X-ray diffraction spectra indicate alleviation of the lattice damage induced by the ion-implantation and also incorporation of most of the implanted species into substitutional lattice sites

Stretch-minimising stream surfaces

KAUST Repository

Barton, Michael; Kosinka, Jin; Calo, Victor M.

2015-01-01

We study the problem of finding stretch-minimising stream surfaces in a divergence-free vector field. These surfaces are generated by motions of seed curves that propagate through the field in a stretch minimising manner, i.e., they move without stretching or shrinking, preserving the length of their arbitrary arc. In general fields, such curves may not exist. How-ever, the divergence-free constraint gives rise to these 'stretch-free' curves that are locally arc-length preserving when infinitesimally propagated. Several families of stretch-free curves are identified and used as initial guesses for stream surface generation. These surfaces are subsequently globally optimised to obtain the best stretch-minimising stream surfaces in a given divergence-free vector field. Our algorithm was tested on benchmark datasets, proving its applicability to incompressible fluid flow simulations, where our stretch-minimising stream surfaces realistically reflect the flow of a flexible univariate object. © 2015 Elsevier Inc. All rights reserved.

Stretch-minimising stream surfaces

KAUST Repository

Barton, Michael

2015-05-01

We study the problem of finding stretch-minimising stream surfaces in a divergence-free vector field. These surfaces are generated by motions of seed curves that propagate through the field in a stretch minimising manner, i.e., they move without stretching or shrinking, preserving the length of their arbitrary arc. In general fields, such curves may not exist. How-ever, the divergence-free constraint gives rise to these \\'stretch-free\\' curves that are locally arc-length preserving when infinitesimally propagated. Several families of stretch-free curves are identified and used as initial guesses for stream surface generation. These surfaces are subsequently globally optimised to obtain the best stretch-minimising stream surfaces in a given divergence-free vector field. Our algorithm was tested on benchmark datasets, proving its applicability to incompressible fluid flow simulations, where our stretch-minimising stream surfaces realistically reflect the flow of a flexible univariate object. © 2015 Elsevier Inc. All rights reserved.

Effect of strain on bond-specific reaction kinetics during the oxidation of H-terminated (111) Si

International Nuclear Information System (INIS)

Gokce, Bilal; Aspnes, David E.; Gundogdu, Kenan

2011-01-01

Although strain is used in semiconductor technology for manipulating optical, electronic, and chemical properties of semiconductors, the understanding of the microscopic phenomena that are affected or influenced by strain is still incomplete. Second-harmonic generation data obtained during the air oxidation of H-terminated (111) Si reveal the effect of compressive strain on this chemical reaction. Even small amounts of strain manipulate the reaction kinetics of surface bonds significantly, with tensile strain enhancing oxidation and compressive strain retarding it. This dramatic change suggests a strain-driven charge transfer mechanism between Si-H up bonds and Si-Si back bonds in the outer layer of Si atoms.

Improvement of μc-Si:H n–i–p cell efficiency with an i-layer made by hot-wire CVD by reverse H2-profiling

NARCIS (Netherlands)

Li, H. B. T.; Franken, R.H.; Stolk, R.L.; van der Werf, C.H.M.; Rath, J.K.; Schropp, R.E.I.

2008-01-01

The technique of maintaining a proper crystalline ratio in microcrystalline silicon (μc-Si:H) layers along the thickness direction by decreasing the H2 dilution ratio during deposition (H2 profiling) was introduced by several laboratories while optimizing either n–i–p or p–i–n μc-Si:H cells made by

Raman characterization of damaged layers of 4H-SiC induced by scratching

Directory of Open Access Journals (Sweden)

Shin-ichi Nakashima

2016-01-01

Full Text Available Recent development of device fabrication of SiC is awaiting detailed study of the machining of the surfaces. We scratched 4H-SiC surfaces with a sliding microindenter made of a SiC chip, and characterized machining affected layers by micro-Raman spectroscopy. The results of the Raman measurement of the scratching grooves revealed that there were residual stress, defects, and stacking faults. Furthermore, with heavy scratching load, we found clusters of amorphous SiC, Si, amorphous carbon, and graphite in the scratching grooves. Analysis of the Raman spectra showed that SiC amorphization occurs first and surface graphitization (carbonization is subsequently generated through the phase transformation of SiC. We expect that the Raman characterization of machined surfaces provides information on the machining mechanism for compound semiconductors.

Effect of hydrogen on passivation quality of SiNx/Si-rich SiNx stacked layers deposited by catalytic chemical vapor deposition on c-Si wafers

International Nuclear Information System (INIS)

Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

2015-01-01

We investigate the role of hydrogen content and fixed charges of catalytic chemical vapor deposited (Cat-CVD) SiN x /Si-rich SiN x stacked layers on the quality of crystalline silicon (c-Si) surface passivation. Calculated density of fixed charges is on the order of 10 12 cm −2 , which is high enough for effective field effect passivation. Hydrogen content in the films is also found to contribute significantly to improvement in passivation quality of the stacked layers. Furthermore, Si-rich SiN x films deposited with H 2 dilution show better passivation quality of SiN x /Si-rich SiN x stacked layers than those prepared without H 2 dilution. Effective minority carrier lifetime (τ eff ) in c-Si passivated by SiN x /Si-rich SiN x stacked layers is as high as 5.1 ms when H 2 is added during Si-rich SiN x deposition, which is much higher than the case of using Si-rich SiN x films prepared without H 2 dilution showing τ eff of 3.3 ms. - Highlights: • Passivation mechanism of Si-rich SiN x /SiN x stacked layers is investigated. • H atoms play important role in passivation quality of the stacked layer. • Addition of H 2 gas during Si-rich SiN x film deposition greatly enhances effective minority carrier lifetime (τ eff ). • For a Si-rich SiN x film with refractive index of 2.92, τ eff improves from 3.3 to 5.1 ms by H 2 addition

Study of density fluctuation in L-mode and H-mode plasmas on JFT-2M by microwave reflectometer

International Nuclear Information System (INIS)

Shinohara, Kouji

1997-08-01

We propose the model which can explain the runaway phase. The model takes account of the scattered wave which is caused by the density fluctuation near the cut-off layer. We should take a new approach instead of the conventional phase measurement in order to derive the information of the density fluctuation from the data with the runaway phase. The complex spectrum and the rotary spectrum analyses are useful tools to analyze such data. The density fluctuation in L-mode and H-mode plasmas is discussed by using this new approach. We have observed that the reduction of the density fluctuation is localized in the edge region where the sheared electric field is produced. The fluctuations in the range of frequency lower than 100 kHz are mainly reduced. Two interesting features have been observed. One is the detection of the coherent mode around 100 kHz in H-mode. This mode appears about 10 ms after L to H transition. The timing corresponds to the formation of a steep density and temperature gradient in the edge region. The other is the enhancement of the fluctuations with the frequency higher than 300 kHz in H-mode in contrast to the reduction of the fluctuations with the frequency lower than 100 kHz. The Doppler shift is observed in the complex auto-power spectrum of the reflected wave when the plasma is actively moved. We have confirmed that the movement of the plasma is appropriately measured by using the low pass filter. The reflectometer can be used to measure the density profile by using a low pass filter even when the runaway phase phenomenon occurs. (author). 150 refs

Stretching Safely and Effectively

Science.gov (United States)

... shown that stretching immediately before an event weakens hamstring strength. Instead of static stretching, try performing a " ... If you play soccer, for instance, stretch your hamstrings as you're more vulnerable to hamstring strains. ...

Operational limits of high density H-modes in ASDEX Upgrade

International Nuclear Information System (INIS)

Mertens, V.; Borrass, K.; Kaufmann, M.; Lang, P.T.; Lang, R.; Mueller, H.W.; Neuhauser, J.; Schneider, R.; Schweinzer, J.; Suttrop, W.

2001-01-01

Systematic investigations of H-mode density limit (H→L-mode back transition) plasmas with gas fuelling and alternatively with additional pellet injection from the magnetic high-field-side HFS are being performed in the new closed divertor configuration DV-II. The resulting database covering a wide range of the externally controllable plasma parameters I p , B t and P heat confirms that the H-mode threshold power exceeds the generally accepted prediction P L→H heat ∝B-bar t dramatically when one approaches Greenwald densities. Additionally, in contrast to the Greenwald scaling a moderate B t -dependence of the H-mode density limit is found. The limit is observed to coincide with divertor detachment and a strong increase of the edge thermal transport, which has, however, no detrimental effect on global τ E . The pellet injection scheme from the magnetic high-field-side HFS, developed recently on ASDEX Upgrade, leads to fast particle drifts which are, contrary to the standard injection from the low-field-side, directed into the plasma core. This improves markedly the pellet particle fuelling efficiency. The responsible physical mechanism, the diamagnetic particle drift of the pellet ablatant was successfully verified recently. Other increased particle losses on respectively different time scales after the ablation process, however, still persist. Generally, a clear gain in achievable density and plasma stored energy is achieved with stationary HFS pellet injection compared to gas-puffing. (author)

Annealing Behavior of Al-Implantation-Induced Disorder in 4H-SiC

International Nuclear Information System (INIS)

Zhang, Yanwen; Weber, William J.; Jiang, Weilin; Shutthanandan, V.; Thevuthasan, Suntharampillai; Janson, Martin; Hallen, Anders

2004-01-01

Single crystal 4H-SiC films were implanted at 150 K with 1.1 MeV Al 2 2+ and subsequently annealed at elevated temperatures. Rutherford backscattering spectrometry (RBS) results indicate that the relative Si disorder at the damage peak recovers significantly as the annealing temperature increases. However, the residual Si disorder is more resistant to high-temperature annealing in the region of the implanted Al. The maximum concentration of Al profile measured by secondary ion mass spectroscopy (SIMS) is a factor of 1000 lower than the level of the residual Si disorder at the same region. Analysis of these results indicates that the excess residual Si disorder around the implanted Al projected range cannot be accounted for by just the Al interstitials; instead, it appears that each implanted Al stabilizes or inhibits recovery for an equivalent of a few hundred Si interstitials under the current experimental conditions

Acute Effects of Static vs. Ballistic Stretching on Strength and Muscular Fatigue Between Ballet Dancers and Resistance-Trained Women.

Science.gov (United States)

Lima, Camila D; Brown, Lee E; Wong, Megan A; Leyva, Whitney D; Pinto, Ronei S; Cadore, Eduardo L; Ruas, Cassio V

2016-11-01

Lima, CD, Brown, LE, Wong, MA, Leyva, WD, Pinto, RS, Cadore, EL, and Ruas, CV. Acute effects of static vs. ballistic stretching on strength and muscular fatigue between ballet dancers and resistance-trained women. J Strength Cond Res 30(11): 3220-3227, 2016-Stretching is used to increase joint range of motion, but the acute effects can decrease muscle strength. However, this may depend on the population or mode of stretching. The purpose of this study was to compare the acute effects of static vs. ballistic stretching on strength and muscular fatigue between ballet dancers and resistance-trained women. Fifteen resistance-trained women (age 23.8 ± 1.80 years, mass 67.47 ± 7.77 kg, height 168.30 ± 5.53 cm) and 12 ballet dancers (age 22.8 ± 3.04 years, mass 58.67 ± 5.65 kg, height 168.00 ± 7.69 cm) performed 5 days of testing. The first day was control (no stretching), whereas the other 4 days were static or ballistic stretching in a counterbalanced order. Range of motion, strength, and fatigue tests were also performed. Both groups demonstrated a significant decrease in hamstrings strength after static (102.71 ± 2.67 N·m) and ballistic stretching (99.49 ± 2.61 N·m) compared with control (113.059 ± 3.25 N·m), with no changes in quadriceps strength. For fatigue, only ballet dancers demonstrated a decrease from control (71.79 ± 4.88%) to ballistic (65.65 ± 8.19%), but no difference with static (65.01 ± 12.29%). These findings suggest that stretching decreases hamstrings strength similarly in ballet dancers and resistance-trained women, with no differences between modes of stretching. However, ballistic stretching only decreased muscular fatigue in ballet dancers, but not in resistance-trained women. Therefore, no stretching should be performed before strength performance. However, ballistic stretching may decrease acute muscular fatigue in ballet dancers.

H-mode pedestal characteristics on MAST

International Nuclear Information System (INIS)

Kirk, A; Counsell, G F; Arends, E; Meyer, H; Taylor, D; Valovic, M; Walsh, M; Wilson, H

2004-01-01

The H-mode pedestal characteristics on the mega ampere spherical tokamak (MAST) are measured in a variety of disconnected double null discharges and the effect of edge localized modes (ELMs) on the pedestal is presented. The edge density pedestal width in spatial co-ordinates is similar on both the inboard and outboard sides. Neutral penetration may be able to explain the density pedestal width but it alone cannot explain the characteristics of the temperature pedestal. The data from MAST can be used to improve temperature pedestal width scalings by extending the ranges in pedestal collisionality, magnetic field, elongation and aspect ratio studied by other machines. Convective transport is found to dominate energy losses during ELMs and the fractional loss of pedestal energy during an ELM on MAST correlates better with SOL ion transit time than with pedestal collisionality

Retention and damage in 3C-β SiC irradiated with He and H ions

Energy Technology Data Exchange (ETDEWEB)

Deslandes, Alec, E-mail: alec.deslandes@csiro.au [Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee DC, New South Wales 2232 (Australia); Guenette, Mathew C. [Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee DC, New South Wales 2232 (Australia); Thomsen, Lars [Australian Synchrotron, 800 Blackburn Road, Clayton, Victoria 3168 (Australia); Ionescu, Mihail; Karatchevtseva, Inna; Lumpkin, Gregory R. [Australian Nuclear Science and Technology Organisation, Locked Bag 2001, Kirrawee DC, New South Wales 2232 (Australia)

2016-02-15

3C-β SiC was implanted with He and H ions using plasma immersion ion implantation (PIII). Regions of damage were created at various depths by applying a sample stage bias of 5 kV, 10 kV, 20 kV or 30 kV. Raman spectroscopy results indicate that He irradiation leads to more damage compared to H irradiation, as observed via increased disordered C and Si signals, as well as broadening of the SiC peaks. X-ray photoelectron spectroscopy (XPS) and near edge X-ray absorption fine structure spectroscopy (NEXAFS) results indicate significant change to the SiC structure and that surface oxidation has occurred following irradiation, with the degree of change varying dependent on impinging He fluence. The distributions of implanted species were measured using elastic recoil detection analysis. Despite the varying degree and depth of damage created in the SiC by the He ion irradiations, the retained H distribution was observed to not be affected by preceding He implantation.

The Relation Between Stretching Typology and Stretching Duration: The Effects on Range of Motion.

Science.gov (United States)

Thomas, Ewan; Bianco, Antonino; Paoli, Antonio; Palma, Antonio

2018-04-01

Different stretching strategies and protocols are widely used to improve flexibility or maintain health, acting on the muscle tendon-unit, in order to improve the range of motion (ROM) of the joints. This review aims to evaluate the current body of literature in order to understand the relation between stretching typology and ROM, and secondly to evaluate if a relation exists between stretching volume (either as a single training session, weekly training and weekly frequency) and ROM, after long-term stretching. Twenty-three articles were considered eligible and included in the quantitative synthesis. All stretching typologies showed ROM improvements over a long-term period, however the static protocols showed significant gains (p<0.05) when compared to the ballistic or PNF protocols. Time spent stretching per week seems fundamental to elicit range of movement improvements when stretches are applied for at least or more than 5 min, whereas the time spent stretching within a single session does not seem to have significant effects for ROM gains. Weekly frequency is positively associated to ROM. Evaluated data indicates that performing stretching at least 5 days a week for at least 5 min per week using static stretching may be beneficial to promote ROM improvements. © Georg Thieme Verlag KG Stuttgart · New York.

Properties of hydrogenated amorphous silicon (a-Si:H) deposited using a microwave Ecr plasma

International Nuclear Information System (INIS)

Mejia H, J.A.

1996-01-01

Hydrogenated amorphous silicon (a-Si:H) films have been widely applied to semiconductor devices, such as thin film transistors, solar cells and photosensitive devices. In this work, the first Si-H-Cl alloys (obtained at the National Institute for Nuclear Research of Mexico) were formed by a microwave electron cyclotron resonance (Ecr) plasma CVD method. Gaseous mixtures of silicon tetrachloride (Si Cl 4 ), hydrogen and argon were used. The Ecr plasma was generated by microwaves at 2.45 GHz and a magnetic field of 670 G was applied to maintain the discharge after resonance condition (occurring at 875 G). Si and Cl contents were analyzed by Rutherford Backscattering Spectrometry (RBS). It was found that, increasing proportion of Si Cl 4 in the mixture or decreasing pressure, the silicon and chlorine percentages decrease. Optical gaps were obtained by spectrophotometry. Decreasing temperature, optical gap values increase from 1.4 to 1.5 eV. (Author)

Torsion-rotation structure and quasi-symmetric-rotor behaviour for the CH3SH asymmetric CH3-bending and C-H stretching bands of E parentage