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Sample records for si wire-array solar

  1. Si Wire-Array Solar Cells

    Science.gov (United States)

    Boettcher, Shannon

    2010-03-01

    Micron-scale Si wire arrays are three-dimensional photovoltaic absorbers that enable orthogonalization of light absorption and carrier collection and hence allow for the utilization of relatively impure Si in efficient solar cell designs. The wire arrays are grown by a vapor-liquid-solid-catalyzed process on a crystalline (111) Si wafer lithographically patterned with an array of metal catalyst particles. Following growth, such arrays can be embedded in polymethyldisiloxane (PDMS) and then peeled from the template growth substrate. The result is an unusual photovoltaic material: a flexible, bendable, wafer-thickness crystalline Si absorber. In this paper I will describe: 1. the growth of high-quality Si wires with controllable doping and the evaluation of their photovoltaic energy-conversion performance using a test electrolyte that forms a rectifying conformal semiconductor-liquid contact 2. the observation of enhanced absorption in wire arrays exceeding the conventional light trapping limits for planar Si cells of equivalent material thickness and 3. single-wire and large-area solid-state Si wire-array solar cell results obtained to date with directions for future cell designs based on optical and device physics. In collaboration with Michael Kelzenberg, Morgan Putnam, Joshua Spurgeon, Daniel Turner-Evans, Emily Warren, Nathan Lewis, and Harry Atwater, California Institute of Technology.

  2. Wire Array Solar Cells: Fabrication and Photoelectrochemical Studies

    Science.gov (United States)

    Spurgeon, Joshua Michael

    Despite demand for clean energy to reduce our addiction to fossil fuels, the price of these technologies relative to oil and coal has prevented their widespread implementation. Solar energy has enormous potential as a carbon-free resource but is several times the cost of coal-produced electricity, largely because photovoltaics of practical efficiency require high-quality, pure semiconductor materials. To produce current in a planar junction solar cell, an electron or hole generated deep within the material must travel all the way to the junction without recombining. Radial junction, wire array solar cells, however, have the potential to decouple the directions of light absorption and charge-carrier collection so that a semiconductor with a minority-carrier diffusion length shorter than its absorption depth (i.e., a lower quality, potentially cheaper material) can effectively produce current. The axial dimension of the wires is long enough for sufficient optical absorption while the charge-carriers are collected along the shorter radial dimension in a massively parallel array. This thesis explores the wire array solar cell design by developing potentially low-cost fabrication methods and investigating the energy-conversion properties of the arrays in photoelectrochemical cells. The concept was initially investigated with Cd(Se, Te) rod arrays; however, Si was the primary focus of wire array research because its semiconductor properties make low-quality Si an ideal candidate for improvement in a radial geometry. Fabrication routes for Si wire arrays were explored, including the vapor-liquid-solid growth of wires using SiCl4. Uniform, vertically aligned Si wires were demonstrated in a process that permits control of the wire radius, length, and spacing. A technique was developed to transfer these wire arrays into a low-cost, flexible polymer film, and grow multiple subsequent arrays using a single Si(111) substrate. Photoelectrochemical measurements on Si wire array

  3. Electrochemically synthesized Si nano wire arrays and thermoelectric nano structures

    International Nuclear Information System (INIS)

    Khuan, N.I.; Ying, K.K.; Nur Ubaidah Saidin; Foo, C.T.

    2012-01-01

    Thermoelectric nano structures hold great promise for capturing and directly converting into electricity some vast amount of low-grade waste heats now being lost to the environment (for example from nuclear power plant, fossil fuel burning, automotive and household appliances). In this study, large-area vertically-aligned silicon nano wire (SiNW) arrays were synthesized in an aqueous solution containing AgNO 3 and HF on p-type Si (100) substrate by self-selective electroless etching process. The etching conditions were systematically varied in order to achieve different stages of nano wire formation. Diameters of the SiNWs obtained varied from approximately 50 to 200 nm and their lengths ranged from several to a few tens of μm. Te/ Bi 2 Te 3 -Si thermoelectric core-shell nano structures were subsequently obtained via galvanic displacement of SiNWs in acidic HF electrolytes containing HTeO 2 + and Bi 3+ / HTeO 2 + ions. The reactions were basically a nano-electrochemical process due to the difference in redox potentials between the materials. the surface-modified SiNWs of core-shell structures had roughened surface morphologies and therefore, higher surface-t-bulk ratios compared to unmodified SiNWs. They have potential applications in sensors, photovoltaic and thermoelectric nano devices. Growth study on the SiNWs and core-shell nano structures produced is presented using various microscopy, diffraction and probe-based techniques for microstructural, morphological and chemical characterizations. (Author)

  4. Wire Array Photovoltaics

    Science.gov (United States)

    Turner-Evans, Dan

    Over the past five years, the cost of solar panels has dropped drastically and, in concert, the number of installed modules has risen exponentially. However, solar electricity is still more than twice as expensive as electricity from a natural gas plant. Fortunately, wire array solar cells have emerged as a promising technology for further lowering the cost of solar. Si wire array solar cells are formed with a unique, low cost growth method and use 100 times less material than conventional Si cells. The wires can be embedded in a transparent, flexible polymer to create a free-standing array that can be rolled up for easy installation in a variety of form factors. Furthermore, by incorporating multijunctions into the wire morphology, higher efficiencies can be achieved while taking advantage of the unique defect relaxation pathways afforded by the 3D wire geometry. The work in this thesis shepherded Si wires from undoped arrays to flexible, functional large area devices and laid the groundwork for multijunction wire array cells. Fabrication techniques were developed to turn intrinsic Si wires into full p-n junctions and the wires were passivated with a-Si:H and a-SiNx:H. Single wire devices yielded open circuit voltages of 600 mV and efficiencies of 9%. The arrays were then embedded in a polymer and contacted with a transparent, flexible, Ni nanoparticle and Ag nanowire top contact. The contact connected >99% of the wires in parallel and yielded flexible, substrate free solar cells featuring hundreds of thousands of wires. Building on the success of the Si wire arrays, GaP was epitaxially grown on the material to create heterostructures for photoelectrochemistry. These cells were limited by low absorption in the GaP due to its indirect bandgap, and poor current collection due to a diffusion length of only 80 nm. However, GaAsP on SiGe offers a superior combination of materials, and wire architectures based on these semiconductors were investigated for multijunction

  5. Vertically p-n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD.

    Science.gov (United States)

    Park, Ji-Hyeon; Kim, Min-Hee; Kissinger, Suthan; Lee, Cheul-Ro

    2013-04-07

    We demonstrate the fabrication of n-GaN:Si/p-GaN:Mg nanowire arrays on (111) silicon substrate by metal organic chemical vapor deposition (MOCVD) method .The nanowires were grown by a newly developed two-step growth process. The diameter of as-grown nanowires ranges from 300-400 nm with a density of 6-7 × 10(7) cm(-2). The p- and n-type doping of the nanowires is achieved with Mg and Si dopant species. Structural characterization by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) indicates that the nanowires are relatively defect-free. The room-temperature photoluminescence emission with a strong peak at 370 nm indicates that the n-GaN:Si/p-GaN:Mg nanowire arrays have potential application in light-emitting nanodevices. The cathodoluminscence (CL) spectrum clearly shows a distinct optical transition of GaN nanodiodes. The nano-n-GaN:Si/p-GaN:Mg diodes were further completed using a sputter coating approach to deposit Au/Ni metal contacts. The polysilazane filler has been etched by a wet chemical etching process. The n-GaN:Si/p-GaN:Mg nanowire diode was fabricated for different Mg source flow rates. The current-voltage (I-V) measurements reveal excellent rectifying properties with an obvious turn-on voltage at 1.6 V for a Mg flow rate of 5 sccm (standard cubic centimeters per minute).

  6. Deformable wire array: fiber drawn tunable metamaterials

    DEFF Research Database (Denmark)

    Fleming, Simon; Stefani, Alessio; Tang, Xiaoli

    2017-01-01

    By fiber drawing we fabricate a wire array metamaterial, the structure of which can be actively modified. The plasma frequency can be tuned by 50% by compressing the metamaterial; recovers when released and the process can be repeated.......By fiber drawing we fabricate a wire array metamaterial, the structure of which can be actively modified. The plasma frequency can be tuned by 50% by compressing the metamaterial; recovers when released and the process can be repeated....

  7. Effect of wire shape on wire array discharge

    Energy Technology Data Exchange (ETDEWEB)

    Shimomura, N.; Tanaka, Y.; Yushita, Y.; Nagata, M. [University of Tokushima, Department of Electrical and Electronic Engineering, Tokushima (Japan); Teramoto, Y.; Katsuki, S.; Akiyama, H. [Kumamoto University, Department of Electrical and Computer Engineering, Kumamoto (Japan)

    2001-09-01

    Although considerable investigations have been reported on z-pinches to achieve nuclear fusion, little attention has been given from the point of view of how a wire array consisting of many parallel wires explodes. Instability existing in the wire array discharge has been shown. In this paper, the effect of wire shape in the wire array on unstable behavior of the wire array discharge is represented by numerical analysis. The claws on the wire formed in installation of wire may cause uniform current distribution on wire array. The effect of error of wire diameter in production is computed by Monte Carlo Method. (author)

  8. Effect of wire shape on wire array discharge

    International Nuclear Information System (INIS)

    Shimomura, N.; Tanaka, Y.; Yushita, Y.; Nagata, M.; Teramoto, Y.; Katsuki, S.; Akiyama, H.

    2001-01-01

    Although considerable investigations have been reported on z-pinches to achieve nuclear fusion, little attention has been given from the point of view of how a wire array consisting of many parallel wires explodes. Instability existing in the wire array discharge has been shown. In this paper, the effect of wire shape in the wire array on unstable behavior of the wire array discharge is represented by numerical analysis. The claws on the wire formed in installation of wire may cause uniform current distribution on wire array. The effect of error of wire diameter in production is computed by Monte Carlo Method. (author)

  9. Primarily Experimental Results for a W Wire Array Z Pinch

    International Nuclear Information System (INIS)

    Kuai Bin; Aici, Qiu; Wang Liangping; Zeng Zhengzhong; Wang Wensheng; Cong Peitian; Gai Tongyang; Wei Fuli; Guo Ning; Zhang Zhong

    2006-01-01

    Primarily experimental results are given for a W wire array Z pinch imploded with up to 2 MA in 100 ns on a Qiangguang-I pulsed power generator. The configuration and parameters of the generator, the W wire array load assembly and the diagnostic system for the experiment are described. The total X-ray energy has been obtained with a averaged power of X-ray radiation of 1.28 TW

  10. Thermal poling of multi-wire array optical fiber

    DEFF Research Database (Denmark)

    Huang, Lin; An, Honglin; Hayashi, Juliano G.

    2018-01-01

    We demonstrate in this paper thermal poling of multi-wire array fibers, which extends poling of fibers with two anodes to similar to 50 and similar to 500 wire array anodes. The second harmonic microscopy observations show that second order nonlinearity (SON) layers are developed surrounding all...... the rings of wires in the similar to 50 anode array fiber with poling of 1.8kV, 250 degrees C and 30min duration, and the outer rings of the similar to 500 anode array fiber at lower poling temperature. Our simulations based on a two-dimensional charge dynamics model confirm this can be explained...

  11. Radius scaling of titanium wire arrays on the Z accelerator

    International Nuclear Information System (INIS)

    Coverdale, C.A.; Denney, C.; Spielman, R.B.

    1999-01-01

    The 20 MA Z accelerator has made possible the generation of substantial radiation (> 100 kJ) at higher photon energies (4.8 keV) through the use of titanium wire arrays. In this paper, the results of experiments designed to study the effects of initial load radius variations of nickel-clad titanium wire arrays will be presented. The load radius was varied from 17.5 mm to 25 mm and titanium K-shell (4.8 keV) yields of greater than 100 kJ were measured. The inclusion of the nickel cladding on the titanium wires allows for higher wire number loads and increases the spectral broadness of the source; kilovolt emissions (nickel plus titanium L-shell) of 400 kJ were measured in these experiments. Comparisons of the data to calculations will be made to estimate pinched plasma parameters such as temperature and participating mass fraction. These results will also be compared with previous pure titanium wire array results

  12. Analysis of Precursor Properties of mixed Al/Alumel Cylindrical Wire Arrays*

    Science.gov (United States)

    Stafford, A.; Safronova, A. S.; Kantsyrev, V. L.; Esaulov, A. A.; Weller, M. E.; Shrestha, I.; Osborne, G. C.; Shlyaptseva, V. V.; Keim, S. F.; Coverdale, C. A.; Chuvatin, A. S.

    2012-10-01

    Previous studies of mid-Z (Cu and Ni) cylindrical wire arrays (CWAs) on Zebra have found precursors with high electron temperatures of >300 eV. However, past experiments with Al CWAs did not find the same high temperature precursors. New precursor experiments using mixed Al/Alumel (Ni 95%, Si 2%, and Al 2%) cylindrical wire arrays have been performed to understand how the properties of L-shell Ni precursor will change and whether Al precursor will be observed. Time gated spectra and pinholes are used to determine precursor plasma conditions for comparison with previous Alumel precursor experiments. A full diagnostic set which included more than ten different beam-lines was implemented. Future work in this direction is discussed. [4pt] *This work was supported by NNSA under DOE Cooperative Agreements DE-FC52-06NA27588, and in part by DE-FC52-06NA27586, and DE-FC52-06NA27616. Sandia is a multi-program laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy under Contract DE-AC04-94AL85000.

  13. Compact wire array sources: power scaling and implosion physics.

    Energy Technology Data Exchange (ETDEWEB)

    Serrano, Jason Dimitri; Chuvatin, Alexander S. (Laboratoire du Centre National de la Recherche Scientifique Ecole Polytechnique, Palaiseau, France); Jones, M. C.; Vesey, Roger Alan; Waisman, Eduardo M.; Ivanov, V. V. (University of Nevada - Reno, Reno, NV); Esaulov, Andrey A. (University of Nevada - Reno, Reno, NV); Ampleford, David J.; Cuneo, Michael Edward; Kantsyrev, Victor Leonidovich (University of Nevada - Reno, Reno, NV); Coverdale, Christine Anne; Rudakov, L. I. (Icarus Research, Bethesda, MD); Jones, Brent Manley; Safronova, Alla S. (University of Nevada - Reno, Reno, NV); Vigil, Marcelino Patricio

    2008-09-01

    A series of ten shots were performed on the Saturn generator in short pulse mode in order to study planar and small-diameter cylindrical tungsten wire arrays at {approx}5 MA current levels and 50-60 ns implosion times as candidates for compact z-pinch radiation sources. A new vacuum hohlraum configuration has been proposed in which multiple z pinches are driven in parallel by a pulsed power generator. Each pinch resides in a separate return current cage, serving also as a primary hohlraum. A collection of such radiation sources surround a compact secondary hohlraum, which may potentially provide an attractive Planckian radiation source or house an inertial confinement fusion fuel capsule. Prior to studying this concept experimentally or numerically, advanced compact wire array loads must be developed and their scaling behavior understood. The 2008 Saturn planar array experiments extend the data set presented in Ref. [1], which studied planar arrays at {approx}3 MA, 100 ns in Saturn long pulse mode. Planar wire array power and yield scaling studies now include current levels directly applicable to multi-pinch experiments that could be performed on the 25 MA Z machine. A maximum total x-ray power of 15 TW (250 kJ in the main pulse, 330 kJ total yield) was observed with a 12-mm-wide planar array at 5.3 MA, 52 ns. The full data set indicates power scaling that is sub-quadratic with load current, while total and main pulse yields are closer to quadratic; these trends are similar to observations of compact cylindrical tungsten arrays on Z. We continue the investigation of energy coupling in these short pulse Saturn experiments using zero-dimensional-type implosion modeling and pinhole imaging, indicating 16 cm/?s implosion velocity in a 12-mm-wide array. The same phenomena of significant trailing mass and evidence for resistive heating are observed at 5 MA as at 3 MA. 17 kJ of Al K-shell radiation was obtained in one Al planar array fielded at 5.5 MA, 57 ns and we

  14. Seeded perturbations in wire array Z-Pinches

    International Nuclear Information System (INIS)

    Robinson, Allen Conrad; Fedin, Dmitry; Kantsyrev, Victor Leonidovich; Wunsch, Scott Edward; Oliver, Bryan Velten; Lebedev, Sergey V.; Coverdale, Christine Anne; Ouart, Nicholas D.; LePell, Paul David; Safronova, Alla S.; Shrestha, I.; McKenney, John Lee; Ampleford, David J.; Rapley, J.; Bott, S.C.; Palmer, J.B.A.; Sotnikov, Vladimir Isaakovich; Bland, Simon Nicholas; Ivanov, Vladimir V.; Chittenden, Jeremy Paul; Jones, B.; Garasi, Christopher Joseph; Hall, Gareth Neville; Yilmaz, M. Faith; Mehlhorn, Thomas Alan; Deeney, Christopher; Pokala, S.; Nalajala, V.

    2005-01-01

    Controlled seeding of perturbations is employed to study the evolution of wire array z-pinch implosion instabilities which strongly impact x-ray production when the 3D plasma stagnates on axis. Wires modulated in radius exhibit locally enhanced magnetic field and imploding bubble formation at discontinuities in wire radius due to the perturbed current path. Wires coated with localized spectroscopic dopants are used to track turbulent material flow. Experiments and MHD modeling offer insight into the behavior of z-pinch instabilities.

  15. Anodic Aluminum Oxide Templates for Nano wires Array Fabrication

    International Nuclear Information System (INIS)

    Nur Ubaidah Saidin; Kok, K.Y.; Ng, I.K.

    2011-01-01

    This paper reports on the process developed to fabricate anodic aluminium oxide (AAO) templates suitable for the fabrication of nano wire arrays. Anodization process has been used to fabricate the AAO templates with pore diameters ranging from 15 nm to 30 nm. Electrodeposition of parallel arrays of high aspect ratio nickel nano wires were demonstrated using these fabricated AAO templates. The nano wires produced were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). It was found that the orientations of the electrodeposited nickel nano wires were governed by the deposition current and electrolyte conditions. (author)

  16. Numerical simulation of wire array load implosion on Yang accelerator

    International Nuclear Information System (INIS)

    Zhao Hailong; Deng Jianjun; Wang Qiang; Zou Wenkang; Wang Ganghua

    2012-01-01

    Based on the ZORK model describing the Saturn facility, a zero dimensional load model of the wire array Z-pinch on Yang accelerator is designed using Pspice to simulate the implosion process. Comparisons between the calculated results and experimental data prove the load model to be correct. The applicability and shortcomings of the load model are presented. One-dimensional magnetohydrodynamic calculations are performed by using the current curve obtained from calculated results of experiment Yang 1050#. and the parameters such as implosion time and radiation X-ray power are obtained. (authors)

  17. Physical analysis for designing nested-wire arrays on Z-pinch implosion

    International Nuclear Information System (INIS)

    Yang Zhenhua; Liu Quan; Ding Ning; Ning Cheng

    2005-01-01

    Z-pinch experiments have demonstrated that the X-ray power increases 40% with a nested-wire array compared with that with a single-layered wire array. The design of the nested-wire array on Z accelerator is studied through the implosion dynamics and the growth of RT instabilities. The analysis shows that the nested-wire array does not produce more total X-ray radiation energy than the single-layered wire array, but it obviously increases the X-ray power. The radius of the outer array of the nested-wire array could be determined based on the radius of the optimized single-layered. The masses of the outer and inner arrays could be determined by the implosion time of the nested-wire array, which is roughly the same as that of the single-layered wire array. Some suggestions are put forward which may be helpful in the nested-wire array design for Z-pinch experiments. (authors)

  18. Plasma dynamics in aluminium wire array Z-pinch implosions

    International Nuclear Information System (INIS)

    Bland, S.N.

    2001-01-01

    The wire array Z-pinch is the world's most powerful laboratory X-ray source. An achieved power of ∼280TW has generated great interest in the use of these devices as a source of hohlraum heating for inertial confinement fusion experiments. However, the physics underlying how wire array Z-pinches implode is not well understood. This thesis presents the first detailed measurements of plasma dynamics in wire array experiments. The MAGPIE generator, with currents of up to 1.4MA, 150ns 10-90% rise-time, was used to implode arrays of 16mm diameter typically containing between 8 and 64 15μm aluminium wires. Diagnostics included: end and side-on laser probing with interferometry, schlieren and shadowgraphy channels; radial and axial streak photography; gated X-ray imaging; XUV and hard X-ray spectrometry; filtered XRDs and diamond PCDs; and a novel X-ray backlighting system to probe high density plasma. It was found that the plasma formed from the wires consisted of cold, dense cores, which ablated producing hot, low density coronal plasma. After an initial acceleration around the cores, coronal plasma streams flowed force-free towards the axis, with an instability wavelength determined by the core size. At ∼50% of the implosion time, the streams collided on axis forming a precursor plasma which appeared to be uniform, stable, and inertially confined. The existence of core-corona structure significantly affected implosion dynamics. For arrays with <64 wires, the wire cores remained in their original positions until ∼80% of the implosion time before accelerating rapidly. At 64 wires a transition in implosion trajectories to 0-D like occurred indicating a possible merger of current carrying plasma close to the cores - the cores themselves did not merge. During implosion, the cores initially developed uncorrelated instabilities that then transformed into a longer wavelength global mode of instability. The study of nested arrays (2 concentric arrays, one inside the other

  19. Seeded perturbations in wire array z-pinches

    International Nuclear Information System (INIS)

    Robinson, Allen Conrad; Kantsyrev, Victor Leonidovich; Wunsch, Scott Edward; Oliver, Bryan Velten; Lebedev, Sergey V.; Safronova, Alla S.; Maxwell, J.; McKenney, John Lee; Ampleford, David J.; Rapley, J.; Bott, S.C.; Palmer, J.B.A.; Bland, Simon Nicholas; Jones, Brent Manley; Chittenden, Jeremy Paul; Garasi, Christopher Joseph; Hall, Gareth Neville; Mehlhorn, Thomas Alan; Deeney, Christopher

    2004-01-01

    The impact of 3D structure on wire array z-pinch dynamics is a topic of current interest, and has been studied by the controlled seeding of wire perturbations. First, Al wires were etched at Sandia, creating 20% radial perturbations with variable axial wavelength. Observations of magnetic bubble formation in the etched regions during experiments on the MAGPIE accelerator are discussed and compared to 3D MHD modeling. Second, thin NaF coatings of 1 mm axial extent were deposited on Al wires and fielded on the Zebra accelerator. Little or no axial transport of the NaF spectroscopic dopant was observed in spatially resolved K-shell spectra, which places constraints on particle diffusivity in dense z-pinch plasmas. Finally, technology development for seeding perturbations is discussed

  20. Wire array K-shell sources on the SPHINX generator

    Science.gov (United States)

    D'Almeida, Thierry; Lassalle, Francis; Grunenwald, Julien; Maury, Patrick; Zucchini, Frédéric; Niasse, Nicolas; Chittenden, Jeremy

    2014-10-01

    The SPHINX machine is a LTD based Z-pinch driver operated by the CEA Gramat (France) and primarily used for studying K-shell radiation effects. We present the results of experiments carried out with single and nested large diameter aluminium wire array loads driven by a current of ~5 MA in ~800 ns. The dynamic of the implosion is studied with filtered X-UV time-integrated pin-hole cameras. The plasma electron temperature and the characteristics of the sources are estimated with time and spatially dependent spectrographs and PCDs. It is shown that Al K-shell yields (>1 keV) up to 27 kJ are obtained for a total radiation of ~ 230 kJ. These results are compared with simulations performed using the latest implementation of the non-LTE DCA code Spk in the 3D Eulerian MHD framework Gorgon developed at Imperial College. Filtered synthetic bolometers and PCD signals, time-dependent spatially integrated spectra and X-UV images are produced and show a good agreement with the experimental data. The capabilities of a prospective SPHINX II machine (20 MA ~ 800 ns) are also assessed for a wider variety of sources (Ti, Cu and W).

  1. Soft X-ray radiation parameters of nested tungsten wire array

    International Nuclear Information System (INIS)

    Ning Jiamin; Jiang Shilun; Xu Rongkun; Xu Zeping; Li Zhenghong; Yang Jianlun

    2011-01-01

    Implosions with nested tungsten wire array were performed at the Angara-5-1 facility in Russian Research Centre. The experimental results of nested tungsten wire array are compared with those of single array. Radiation parameters of nested array are discussed based on four different dynamic models. When the implosions of outer and inner wire arrays are synchronized,the relatively uniform distribution of inner layer plasma will improve the uniformity of outer layer plasma. As compared with single array, nested array has an increase of 32% in X-ray radiation power. (authors)

  2. Construction and characterization of spherical Si solar cells combined with SiC electric power inverter

    Science.gov (United States)

    Oku, Takeo; Matsumoto, Taisuke; Hiramatsu, Kouichi; Yasuda, Masashi; Shimono, Akio; Takeda, Yoshikazu; Murozono, Mikio

    2015-02-01

    Spherical silicon (Si) photovoltaic solar cell systems combined with an electric power inverter using silicon carbide (SiC) field-effect transistor (FET) were constructed and characterized, which were compared with an ordinary Si-based converter. The SiC-FET devices were introduced in the direct current-alternating current (DC-AC) converter, which was connected with the solar panels. The spherical Si solar cells were used as the power sources, and the spherical Si panels are lighter and more flexible compared with the ordinary flat Si solar panels. Conversion efficiencies of the spherical Si solar cells were improved by using the SiC-FET.

  3. Dynamical analysis of surface-insulated planar wire array Z-pinches

    Science.gov (United States)

    Li, Yang; Sheng, Liang; Hei, Dongwei; Li, Xingwen; Zhang, Jinhai; Li, Mo; Qiu, Aici

    2018-05-01

    The ablation and implosion dynamics of planar wire array Z-pinches with and without surface insulation are compared and discussed in this paper. This paper first presents a phenomenological model named the ablation and cascade snowplow implosion (ACSI) model, which accounts for the ablation and implosion phases of a planar wire array Z-pinch in a single simulation. The comparison between experimental data and simulation results shows that the ACSI model could give a fairly good description about the dynamical characteristics of planar wire array Z-pinches. Surface insulation introduces notable differences in the ablation phase of planar wire array Z-pinches. The ablation phase is divided into two stages: insulation layer ablation and tungsten wire ablation. The two-stage ablation process of insulated wires is simulated in the ACSI model by updating the formulas describing the ablation process.

  4. Studies of implosion processes of nested tungsten wire-array Z-pinch

    International Nuclear Information System (INIS)

    Ning Cheng; Ding Ning; Liu Quan; Yang Zhenhua

    2006-01-01

    Nested wire-array is a kind of promising structured-load because it can improve the quality of Z-pinch plasma and enhance the radiation power of X-ray source. Based on the zero-dimensional model, the assumption of wire-array collision, and the criterion of optimized load (maximal load kinetic energy), optimization of the typical nested wire-array as a load of Z machine at Sandia Laboratory was carried out. It was shown that the load has been basically optimized. The Z-pinch process of the typical load was numerically studied by means of one-dimensional three-temperature radiation magneto-hydrodynamics (RMHD) code. The obtained results reproduce the dynamic process of the Z-pinch and show the implosion trajectory of nested wire-array and the transfer process of drive current between the inner and outer array. The experimental and computational X-ray pulse was compared, and it was suggested that the assumption of wire-array collision was reasonable in nested wire-array Z-pinch at least for the current level of Z machine. (authors)

  5. Analysis of X-ray iron and nickel radiation and jets from planar wire arrays and X-pinches

    International Nuclear Information System (INIS)

    Safronova, A S; Kantsyrev, V L; Esaulov, A A; Ouart, N D; Shlyaptseva, V; Williamson, K M; Shrestha, I; Osborne, G C; Weller, M E

    2010-01-01

    University-scale Z-pinch devices are able to produce plasmas with a broad range of sizes, temperatures, densities, their gradients, and opacity properties. Radiative properties of such plasmas depend on material, mass, and configuration of the wire array loads. Experiments with two different types of loads, double planar wire arrays (DPWA) and X-pinches, performed on the 1 MA Zebra generator at UNR are analyzed. X-pinches are made from Stainless Steel (69% Fe, 20% Cr, and 9% Ni) wires. Combined DPWAs consist of one plane from SS wires and another plane from Alumel (95% Ni, 2% Al, 2% Si) wires. The main focus of this work is on the analysis of plasma jets at the early phase of plasma formation and the K-and L-shell radiation generation at the implosion and stagnation phases in experiments with the two aforementioned wire loads. The relevant theoretical tools that guide the data analysis include non-LTE collisional-radiative and wire ablation dynamics models. The astrophysical relevance of the plasma jets as well as of spectroscopic and imaging studies are demonstrated.

  6. Study of ablation and implosion stages in wire arrays using coupled ultraviolet and X-ray probing diagnostics

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, A. A.; Ivanov, V. V.; Astanovitskiy, A. L.; Wiewior, P. P.; Chalyy, O. [University of Nevada Reno, Reno, Nevada 89557 (United States); Papp, D. [University of Nevada Reno, Reno, Nevada 89557 (United States); ELI-ALPS, ELI-Hu Nkft., H-6720 Szeged (Hungary)

    2015-11-15

    Star and cylindrical wire arrays were studied using laser probing and X-ray radiography at the 1-MA Zebra pulse power generator at the University of Nevada, Reno. The Leopard laser provided backlighting, producing a laser plasma from a Si target which emitted an X-ray probing pulse at the wavelength of 6.65 Å. A spherically bent quartz crystal imaged the backlit wires onto X-ray film. Laser probing diagnostics at the wavelength of 266 nm included a 3-channel polarimeter for Faraday rotation diagnostic and two-frame laser interferometry with two shearing interferometers to study the evolution of the plasma electron density at the ablation and implosion stages. Dynamics of the plasma density profile in Al wire arrays at the ablation stage were directly studied with interferometry, and expansion of wire cores was measured with X-ray radiography. The magnetic field in the imploding plasma was measured with the Faraday rotation diagnostic, and current was reconstructed.

  7. Analysis of Si/SiGe Heterostructure Solar Cell

    Directory of Open Access Journals (Sweden)

    Ashish Kumar Singh

    2014-01-01

    Full Text Available Sunlight is the largest source of carbon-neutral energy. Large amount of energy, about 4.3 × 1020 J/hr (Lewis, 2005, is radiated because of nuclear fusion reaction by sun, but it is unfortunate that it is not exploited to its maximum level. Various photovoltaic researches are ongoing to find low cost, and highly efficient solar cell to fulfil looming energy crisis around the globe. Thin film solar cell along with enhanced absorption property will be the best, so combination of SiGe alloy is considered. The paper presented here consists of a numerical model of Si/Si1-xGex heterostructure solar cell. The research has investigated characteristics such as short circuit current density (Jsc, generation rate (G, absorption coefficient (α, and open circuit voltage (Voc with optimal Ge concentration. The addition of Ge content to Si layer will affect the property of material and can be calculated with the use of Vegard’s law. Due to this, short circuit current density increases.

  8. Recent progress in Si thin film technology for solar cells

    Science.gov (United States)

    Kuwano, Yukinori; Nakano, Shoichi; Tsuda, Shinya

    1991-11-01

    Progress in Si thin film technology 'specifically amorphous Si (a-Si) and polycrystalline Si (poly-Si) thin film' for solar cells is summarized here from fabrication method, material, and structural viewpoints. In addition to a-Si, primary results on poly-Si thin film research are discussed. Various applications for a-Si solar cells are mentioned, and consumer applications and a-Si solar cell photovoltaic systems are introduced. New product developments include see-through solar cells, solar cell roofing tiles, and ultra-light flexible solar cells. As for new systems, air conditioning equipment powered by solar cells is described. Looking to the future, the proposed GENESIS project is discussed.

  9. Wafer-scale high-throughput ordered arrays of Si and coaxial Si/Si(1-x)Ge(x) wires: fabrication, characterization, and photovoltaic application.

    Science.gov (United States)

    Pan, Caofeng; Luo, Zhixiang; Xu, Chen; Luo, Jun; Liang, Renrong; Zhu, Guang; Wu, Wenzhuo; Guo, Wenxi; Yan, Xingxu; Xu, Jun; Wang, Zhong Lin; Zhu, Jing

    2011-08-23

    We have developed a method combining lithography and catalytic etching to fabricate large-area (uniform coverage over an entire 5-in. wafer) arrays of vertically aligned single-crystal Si nanowires with high throughput. Coaxial n-Si/p-SiGe wire arrays are also fabricated by further coating single-crystal epitaxial SiGe layers on the Si wires using ultrahigh vacuum chemical vapor deposition (UHVCVD). This method allows precise control over the diameter, length, density, spacing, orientation, shape, pattern and location of the Si and Si/SiGe nanowire arrays, making it possible to fabricate an array of devices based on rationally designed nanowire arrays. A proposed fabrication mechanism of the etching process is presented. Inspired by the excellent antireflection properties of the Si/SiGe wire arrays, we built solar cells based on the arrays of these wires containing radial junctions, an example of which exhibits an open circuit voltage (V(oc)) of 650 mV, a short-circuit current density (J(sc)) of 8.38 mA/cm(2), a fill factor of 0.60, and an energy conversion efficiency (η) of 3.26%. Such a p-n radial structure will have a great potential application for cost-efficient photovoltaic (PV) solar energy conversion. © 2011 American Chemical Society

  10. Soft X-ray radiation power characteristics of tungsten wire arrays on Yang accelerator

    International Nuclear Information System (INIS)

    Zhang Siqun; Ouyang Kai; Huang Xianbin; Dan Jiakun; Zhou Rongguo; Yang Liang

    2013-01-01

    A series of experiments were carried out to research the X-ray radiation characteristics of tungsten wire arrays on Yang accelerator. In those experiments, we charged the Marx generator of 60 kV, and the load current of 0.85-1.00 MA, the rise time of 75-90 ns (10%-90%). A soft X-ray scintillator powermeter which responded flatly to 50-1800 eV X-rays was used to measure the power of soft X-ray emitted from implosion plasma. In this paper, we present the measuring results of time-resolved soft X-ray radiation power, and discuss the radiation characteristics of implosion plasma by analyzing the correlations of soft X-ray radiant power and the diameter, length, wire number of the tungsten wire arrays. The optimizing wire array configuration parameters on Yang are as follows: 8 mm array diameter, 15 mm wire length, and 24 wire number. We also present the radiant power difference in radial and axial directions of the wire arrays. (authors)

  11. The fabrication techniques of Z-pinch targets. Techniques of fabricating self-adapted Z-pinch wire-arrays

    International Nuclear Information System (INIS)

    Qiu Longhui; Wei Yun; Liu Debin; Sun Zuoke; Yuan Yuping

    2002-01-01

    In order to fabricate wire arrays for use in the Z-pinch physical experiments, the fabrication techniques are investigated as follow: Thickness of about 1-1.5 μm of gold is electroplated on the surface of ultra-fine tungsten wires. Fibers of deuterated-polystyrene (DPS) with diameters from 30 to 100 microns are made from molten DPS. And two kinds of planar wire-arrays and four types of annular wire-arrays are designed, which are able to adapt to the variation of the distance between the cathode and anode inside the target chamber. Furthermore, wire-arrays with diameters form 5-24 μm are fabricated with tungsten wires, respectively. The on-site test shows that the wire-arrays can self-adapt to the distance changes perfectly

  12. Experimental studies of Z-pinches of mixed wire array with aluminum and tungsten

    International Nuclear Information System (INIS)

    Ning Cheng; Li Zhenghong; Hua Xinsheng; Xu Rongkun; Peng Xianjue; Xu Zeping; Yang Jianlun; Guo Cun; Jiang Shilun; Feng Shuping; Yang Libing; Yan Chengli; Song Fengjun; Smirnov, V.P.; Kalinin, Yu.G.; Kingsep, A.S.; Chernenko, A.S.; Grabovsky, E.V.

    2004-01-01

    In the form of joint experiment between China and Russia, the experimental studies of Z-pinches of mixed wire array of aluminum (A1) and tungsten (W) were carried out on S-300 generator, which was located on Kurchatov Institute of Russia. The experimental results were compared with those of single A1 array and single W array, respectively. There are obvious difference between mixed one and single one in their photon spectral distributions. The intensity of K-series emission lines from the mixed wire array Z-pinch is lower than that from single A1 array. The radiated lines with wavelengths less than 1.6 nm were not found in single W array Z-pinches. In the Z-pinch processes, the area radiating x-rays in mixed wire array is smaller than that of single A1 array, but is slightly lower than that from single W array. The FWHM of x-ray pulse with a maximal power 0.3-0.5 TW and total energy 10-20 kJ is about 25 ns, which radiated from Z-pinches with a radial convergence of 4-5 on S-300 generator. The shadow photograph of the mixed wire-array Z-pinch plasma by laser probe shows that the core-corona configuration was formed and the corona was moving toward the center axis during the wire-array plasma formation, that the interface of the plasma is not clear, and that there are a number structures inside. They also suggests that there was an obvious development of Magneto Rayleigh-Taylor instability in the Z-pinch process as well

  13. Single and nested tungsten-wire-array dynamics and applications to inertial confinement fusion

    Science.gov (United States)

    Cuneo, Michael

    2005-10-01

    Wire array z-pinches show great promise as x-ray sources for indirect-drive inertial confinement fusion (ICF). The double z-pinch hohlraum, for example, has produced capsule radiation drive symmetric to within 3%. This ICF concept will require that each of two 20-mm-diam arrays scale to x-ray powers ˜1 PW, to drive high-yield (>0.2 GJ) capsules to ignition. High-yield fusion will also require a temporally shaped radiation pulse to drive a low-entropy capsule implosion. Recently, improved understanding of high current (11-19 MA) single and nested wire-array dynamics has enabled significant progress towards these goals. As at lower currents, a single wire array (and both the outer and inner arrays of a nested system) shows a wire ablation phase, axial modulation of the ablation rate, a larger ablation rate for larger diameter wires, trailing mass and trailing current. These processes and others produce a broad mass profile that may impact the optimization of x-ray output for single and nested arrays. Our new insights into wire array physics have led to 20-mm-diam single and nested arrays with peak powers of 150-190 TW at implosion times of 55-90 ns, increased from 60-120 TW at 95-110 ns, improving power scaling. Radiation pulse shapes required for 3-shock isentropic compression of high-yield ICF capsules have also been demonstrated with nested wire arrays operating in current-transfer mode. In collaboration with: D.B. Sinars, R.A. Vesey, E.M. Waisman, W.A. Stygar, D.E. Bliss, S.V. Lebedev, J.P. Chittenden, P.V. Sasorov, R.W. Lemke, E.P. Yu, B.B. Afeyan, G.R. Bennett, M.G. Mazarakis, M.R. Lopez, M.E. Savage, J.L. Porter, T.A. Mehlhorn.

  14. Luminescence of solar cells with a-Si:H/c-Si heterojunctions

    Science.gov (United States)

    Zhigunov, D. M.; Il'in, A. S.; Forsh, P. A.; Bobyl', A. V.; Verbitskii, V. N.; Terukov, E. I.; Kashkarov, P. K.

    2017-05-01

    We have studied the electroluminescence (EL) and photoluminescence (PL) of solar cells containing a-Si:H/c-Si heterojunctions. It is established that both the EL and PL properties of these cells are determined by the radiative recombination of nonequilibrium carriers in crystalline silicon (c-Si). The external EL energy yield (efficiency) of solar cells with a-Si:H/c-Si heterojunctions at room temperature amounts to 2.1% and exceeds the value reached in silicon diode structures. This large EL efficiency can be explained by good passivation of the surface of crystalline silicon and the corresponding increase in lifetime of minority carrier s in these solar cells.

  15. Wire array z-pinch insights for high X-ray power generation

    International Nuclear Information System (INIS)

    Sanford, T.W.L.; Marder, B.M.; Desjarlais, M.P.

    1998-01-01

    The discovery that the use of very large numbers of wires enables high x-ray power to be generated from wire-array z-pinches represents a breakthrough in load design for large pulsed power generators, and has permitted high temperatures to be generated in radiation cavities on Saturn and Z. In this paper, changes in x-ray emission characteristics as a function of wire number, array mass, and load radius, for 20-mm-long aluminum arrays on Saturn that led to these breakthrough hohlraum results, are discussed and compared with a few related emission characteristics of high-wire-number aluminum and tungsten arrays on Z. X-ray measurement comparisons with analytic models and 2-D radiation-magnetohydrodynamic (RMHC) code simulations in the x-y and r-z planes provide confidence in the ability of the models and codes to predict future x-ray performance with very-large-number wire arrays

  16. Wire array z-pinch insights for high X-ray power generation

    Energy Technology Data Exchange (ETDEWEB)

    Sanford, T.W.L.; Marder, B.M.; Desjarlais, M.P. [and others

    1998-12-31

    The discovery that the use of very large numbers of wires enables high x-ray power to be generated from wire-array z-pinches represents a breakthrough in load design for large pulsed power generators, and has permitted high temperatures to be generated in radiation cavities on Saturn and Z. In this paper, changes in x-ray emission characteristics as a function of wire number, array mass, and load radius, for 20-mm-long aluminum arrays on Saturn that led to these breakthrough hohlraum results, are discussed and compared with a few related emission characteristics of high-wire-number aluminum and tungsten arrays on Z. X-ray measurement comparisons with analytic models and 2-D radiation-magnetohydrodynamic (RMHC) code simulations in the x-y and r-z planes provide confidence in the ability of the models and codes to predict future x-ray performance with very-large-number wire arrays.

  17. Wire array z-pinch insights for high x-ray power generation

    Energy Technology Data Exchange (ETDEWEB)

    Sanford, T.W.L.; Mock, R.C.; Marder, B.M. [and others

    1997-12-31

    The discovery that the use of very large numbers of wires enables high x-ray power to be generated from wire-array z-pinches represents a breakthrough in load design for large pulsed power generators, and has permitted high temperatures to be generated in radiation cavities on Saturn and Z. In this paper, changes in x-ray emission characteristics as a function of wire number, array mass, and load radius, for 20-mm-long aluminum arrays on Saturn that led to these breakthrough hohlraum results, are discussed and compared with a few related emission characteristics of high-wire-number aluminum and tungsten arrays on Z. X-ray measurement comparisons with analytic models and 2-D radiation-magnetohydrodynamic (RMHC) code simulations in the x-y and r-z planes provide confidence in the ability of the models and codes to predict future x-ray performance with very-large-number wire arrays.

  18. Wire array z-pinch insights for high x-ray power generation

    Energy Technology Data Exchange (ETDEWEB)

    Sanford, T.W.L.; Mock, R.C.; Nash, T.J. [and others

    1998-08-01

    The discovery that the use of very large numbers of wires enables high x-ray power to be generated from wire-array z-pinches represents a breakthrough in load design for large pulsed power generators, and has permitted high temperatures to be generated in radiation cavities on Saturn. In this paper, changes in x-ray emission characteristics as a function of wire number, array mass, and load radius, for 20-mm-long aluminum arrays on Saturn that led to these breakthrough hohlraum results, are discussed and compared with a few related emission characteristics of high-wire-number aluminum and tungsten arrays on Z. X=ray measurement comparisons with analytic models and 2-D radiation-magnetohydrodynamic (RMHC) code simulations in the x-y and r-z planes provide confidence in the ability of the models and codes to predict future x-ray performance with very-large-number wire arrays.

  19. The effects of insulating coatings and current prepulse on tungsten planar wire array Z-pinches

    Energy Technology Data Exchange (ETDEWEB)

    Li, M., E-mail: limo@nint.ac.cn; Li, Y. [State Key Laboratory of Electrical Insulation and Power Equipment, Xi' an Jiaotong University, Shaanxi 710049 (China); State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi' an 710024 (China); Sheng, L.; Wang, L. P.; Zhao, C.; Yuan, Y.; Zhang, X. J.; Zhang, M.; Peng, B. D.; Zhang, J. H.; Zhang, S. G.; Qiu, M. T. [State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi' an 710024 (China); Li, X. W. [State Key Laboratory of Electrical Insulation and Power Equipment, Xi' an Jiaotong University, Shaanxi 710049 (China)

    2015-12-15

    This paper presents experimental results on the effects of insulating coatings and current prepulse on tungsten planar wire array Z-pinches on ∼100 ns main current facility. Optical framing images indicated that without a current prepulse the wire ablation process was asymmetrical and the implosion was zippered. The x-ray peak power was ∼320 GW. By using insulating coatings on the wire surface the asymmetry remained, and the processes of ablation and implosion were delayed by ∼30 ns. The x-ray burst was narrow and decreased to ∼200 GW. When current prepulses were used on both standard and insulated wire arrays, implosion symmetry was improved and the x-ray burst was improved (to ∼520 GW peak power). In addition, there was a strong emitting precursor column for insulated loads with the current prepulse.

  20. Fast commutation of high current in double wire array Z-pinch loads

    International Nuclear Information System (INIS)

    Davis, J.; Gondarenko, N.A.; Velikovich, A.L.

    1997-01-01

    A dynamic model of multi-MA current commutation in a double wire array Z-pinch load is proposed and studied theoretically. Initially, the load is configured as nested concentric wire arrays, with the current driven through the outer array and imploding it. Once the outer array or the annular plasma shell formed from it approaches the inner array, the imploded plasma might penetrate through the gaps between the wires, but the azimuthal magnetic field is trapped due to both the high conductivity of the inner wires and the inductive coupling between the two parts of the array, causing a rapid switching of the total current to the inner part of the array. copyright 1997 American Institute of Physics

  1. Cryogenic deuterium Z-pinch and wire array Z-pinch studies at Imperial College

    International Nuclear Information System (INIS)

    Haines, M.G.; Aliaga-Rossel, R.; Beg, N.F.

    2001-01-01

    Z-pinch experiments using cryogenic deuterium fibre loads have been carried out on the MAGPIE generator at currents up to 1.4MA. M=0 instabilities in the corona caused plasma expansion and disruption before the plasma could enter the collisionless Large ion Larmor radius regime. For the last 12 months we have studied Aluminium wire array implosions using laser probing, optical streaks and gated X-ray images. Plasma from the wires in accelerated to the axis as radial plasma streams with uncorrelated m=0 instabilities superimposed. Later in the discharge a global Rayleigh-Taylor (R-T) instability develops. Single and double aluminium and tungsten wire shots were conducted at 150kA. 2-D and 3-D simulations and a heuristic model of wire arrays will be presented along with theories on the combined MHD/R-T instability and sheared axial flow generation by large ion Larmor radius effects. (author)

  2. Cryogenic deuterium Z-pinch and wire array Z-pinch studies at imperial college

    International Nuclear Information System (INIS)

    Haines, M.G.; Aliaga-Rossel, R.; Beg, F.N.

    1999-01-01

    Z-pinch experiments using cryogenic deuterium fibre loads have been carried out on the MAGPIE generator at currents up to 1.4MA. M=0 instabilities in the corona caused plasma expansion and disruption before the plasma could enter the collisionless Large ion Larmor radius regime. For the last 12 months we have studied Aluminium wire array implosions using laser probing, optical streaks and gated X-ray images. Plasma from the wires in accelerated to the axis as radial plasma streams with uncorrelated m=0 instabilities superimposed. Later in the discharge a global Rayleigh-Taylor (R-T) instability develops. Single and double aluminium and tungsten wire shots were conducted at 150kA. 2-D and 3-D simulations and a heuristic model of wire arrays will be presented along with theories on the combined MHD/R-T instability and sheared axial flow generation by large ion Larmor radius effects. (author)

  3. 3D MHD Simulations of Radial Wire Array Z-pinches

    International Nuclear Information System (INIS)

    Niasse, N.; Chittenden, J. P.; Bland, S. N.; Suzuki-Vidal, F. A.; Hall, G. N.; Lebedev, S. V.; Calamy, H.; Zucchini, F.; Lassalle, F.; Bedoch, J. P.

    2009-01-01

    Recent experiments carried out on the MAGPIE (1 MA, 250 ns), OEDIPE (730 kA, 1.5 μs) and SPHINX (4 MA, 700 ns)[1] facilities have shown the relatively high level of scalability of the Radial Wire Array Z-pinches. These configurations where the wires stretch radially outwards from a central cathode offer numerous advantages over standard cylindrical arrays. In particular, imploding in a very stable and compact way, they seem suitable for coupling to small scale hohlraums. Making use of the 3D resistive magneto-hydrodynamic code GORGON[2] developed at Imperial College, the dynamic of the radial wire arrays is investigated. Influence of the cathode hotspots and wires angle on the x-ray emissions is also discussed. Comparison with experiments is offered to validate the numerical studies.

  4. Wire array z-pinch insights for high x-ray power generation

    International Nuclear Information System (INIS)

    Sanford, T.W.L.; Mock, R.C.; Marder, B.M.

    1998-08-01

    The discovery that the use of very large numbers of wires enables high x-ray power to be generated from wire-array z-pinches represents a breakthrough in load design for large pulsed power generators, and has permitted high temperatures to be generated in radiation cavities on Saturn and Z. In this paper, changes in x-ray emission characteristics as a function of wire number, array mass, and load radius, for 20-mm-long aluminum arrays on Saturn that led to these breakthrough hohlraum results, are discussed and compared with a few related emission characteristics of high-wire-number aluminum and tungsten arrays on Z. X=ray measurement comparisons with analytic models and 2-D radiation-magnetohydrodynamic (RMHC) code simulations in the x-y and r-z planes provide confidence in the ability of the models and codes to predict future x-ray performance with very-large-number wire arrays

  5. Preliminary study of Rayleigh-Taylor instability in wire-array Z-pinch

    International Nuclear Information System (INIS)

    He Kaihui; Feng Kaiming; Li Qiang; Gao Chunming

    2000-01-01

    It is important to research into the MHD Rayleigh-Taylor instability developed in Z-pinch implosion. A snowplough model of the single wire Z-pinch is presented. The perturbation amplitude of Rayleigh-Taylor instability in the wire-array Z-pinch is analyzed quantitatively. Sheared axial flow is put forward to mitigate and reduce the Rayleigh-Taylor instability. And other approaches used to mitigate MHD instability in such a super-fast process are explored

  6. Astrophysically relevant radiatively cooled hypersonic bow shocks in nested wire arrays

    Science.gov (United States)

    Ampleford, David

    2009-11-01

    We have performed laboratory experiments which introduce obstructions into hypersonic plasma flows to study the formation of shocks. Astrophysical observations have demonstrated many examples of equivalent radiatively cooled bow shocks, for example the head of protostellar jets or supernova remnants passing through the interstellar medium or between discrete clumps in jets. Wire array z-pinches allow us to study quasi-planar radiatively cooled flows in the laboratory. The early stage of a wire array z-pinch implosion consists of a steady flow of the wire material towards the axis. Given a high rate of radiative cooling, these flows reach high sonic- Mach numbers, typically up to 5. The 2D nature of this configuration allows the insertion of obstacles into the flow, such as a concentric ``inner'' wire array, as has previously been studied for ICF research. Here we study the application of such a nested array to laboratory astrophysics where the inner wires act as obstructions perpendicular to the flow, and induce bow shocks. By varying the wire array material (W/Al), the significance of radiative cooling on these shocks can be controlled, and is shown to change the shock opening angle. As multiple obstructions are present, the experiments show the interaction of multiple bow shocks. It is also possible to introduce a magnetic field around the static object, increasing the opening angle of the shocks. Further experiments can be designed to control the flow density, magnetic field structure and obstruction locations. In collaboration with: S.V. Lebedev, M.E. Cuneo, C.A. Jennings, S.N. Bland, J.P. Chittenden, A. Ciardi, G.N. Hall, S.C. Bott, M. Sherlock, A. Frank, E. Blackman

  7. Effect of discrete wires on the implosion dynamics of wire array Z pinches

    International Nuclear Information System (INIS)

    Lebedev, S. V.; Beg, F. N.; Bland, S. N.; Chittenden, J. P.; Dangor, A. E.; Haines, M. G.; Kwek, K. H.; Pikuz, S. A.; Shelkovenko, T. A.

    2001-01-01

    A phenomenological model of wire array Z-pinch implosions, based on the analysis of experimental data obtained on the mega-ampere generator for plasma implosion experiments (MAGPIE) generator [I. H. Mitchell , Rev. Sci. Instrum. 67, 1533 (1996)], is described. The data show that during the first ∼80% of the implosion the wire cores remain stationary in their initial positions, while the coronal plasma is continuously jetting from the wire cores to the array axis. This phase ends by the formation of gaps in the wire cores, which occurs due to the nonuniformity of the ablation rate along the wires. The final phase of the implosion starting at this time occurs as a rapid snowplow-like implosion of the radially distributed precursor plasma, previously injected in the interior of the array. The density distribution of the precursor plasma, being peaked on the array axis, could be a key factor providing stability of the wire array implosions operating in the regime of discrete wires. The modified ''initial'' conditions for simulations of wire array Z-pinch implosions with one-dimension (1D) and two-dimensions (2D) in the r--z plane, radiation-magnetohydrodynamic (MHD) codes, and a possible scaling to a larger drive current are discussed

  8. Hybrid simulations of Z-Pinches in support of wire array implosion experiments at NTF

    International Nuclear Information System (INIS)

    Sotnikov, Vladimir Isaakovich; Oliver, Bryan Velten; Ivanov, Vladimir V.; LePell, Paul David; Fedin, Dmitry; Kantsyrev, Victor Leonidovich; Coverdale, Christine Anne; Travnicek, P.; Deeney, Christopher; Hellinger, P.; Jones, B.; Leboeuf, J.N.; Cowan, Thomas E.; Safronova, Alla S.

    2005-01-01

    Three-dimensional hybrid simulation of a plasma current-carrying column reveal two different regimes of sausage and kink instability development. In the first regime, with small Hall parameter, development of instabilities leads to the appearance of large-scale axial perturbations and eventually to bending of the plasma column. In the second regime, with a four-times-larger Hall parameter, small-scale perturbations dominate and no bending of the plasma column is observed. Simulation results are compared with laser probing experimental data obtained during wire array implosions on the Zebra pulse power generator at the Nevada Terawatt Facility.

  9. Studies of Hot Spots in Imploding Wire Arrays at 1 MA on COBRA

    International Nuclear Information System (INIS)

    Pikuz, Sergey A.; Shelkovenko, Tatiana A.; McBride, Ryan D.; Hammer, David A.

    2009-01-01

    We present recent results from hot spot investigations in imploding Al wire array z-pinches on the COBRA generator at Cornell University using x-ray diagnostics. Measurements of the temporal and spatial distribution of hot spots in stagnating plasmas by an x-ray streak-camera are included. Experiments show that hot spots have nanosecond lifetime and appear randomly along the array axis after plasma stagnation in secondary pinches in 8 mm diameter and during plasma stagnation in the arrays with 4 mm diameter.

  10. SiNx layers on nanostructured Si solar cells: Effective for optical absorption and carrier collection

    International Nuclear Information System (INIS)

    Cho, Yunae; Kim, Eunah; Gwon, Minji; Kim, Dong-Wook; Park, Hyeong-Ho; Kim, Joondong

    2015-01-01

    We compared nanopatterned Si solar cells with and without SiN x layers. The SiN x layer coating significantly improved the internal quantum efficiency of the nanopatterned cells at long wavelengths as well as short wavelengths, whereas the surface passivation helped carrier collection of flat cells mainly at short wavelengths. The surface nanostructured array enhanced the optical absorption and also concentrated incoming light near the surface in broad wavelength range. Resulting high density of the photo-excited carriers near the surface could lead to significant recombination loss and the SiN x layer played a crucial role in the improved carrier collection of the nanostructured solar cells

  11. Preliminary experimental results of tungsten wire-array Z-pinches on primary test stand

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Xian-Bin; Zhou, Shao-Tong; Dan, Jia-Kun; Ren, Xiao-Dong, E-mail: amosrxd@163.com; Wang, Kun-Lun; Zhang, Si-Qun; Li, Jing; Xu, Qiang; Cai, Hong-Chun; Duan, Shu-Chao; Ouyang, Kai; Chen, Guang-Hua; Ji, Ce; Wei, Bing; Feng, Shu-Ping; Wang, Meng; Xie, Wei-Ping; Deng, Jian-Jun [Key Laboratory of Pulsed Power, Institute of Fluid Physics, China Academy of Engineering Physics, P.O. Box 919-108, Mianyang, Sichuan 621999 (China); Zhou, Xiu-Wen; Yang, Yi [Research Center of Laser Fusion, China Academy of Engineering Physics, P.O. Box 919-987, Mianyang, Sichuan 621999 (China)

    2015-07-15

    The Primary Test Stand (PTS) developed at the China Academy of Engineering Physics is a 20 TW pulsed power driver, which can deliver a ∼10 MA, 70 ns rise-time (10%–90%) current to a short-circuit load and has important applications in Z-pinch driven inertial confinement fusion and high energy density physics. Preliminary results of tungsten wire-array Z-pinch experiments on PTS are presented. The load geometries investigated include 15-mm-tall cylindrical single and nested arrays with diameter ranging from 13 mm to 30 mm, consisting of 132–300 tungsten wires with 5–10 μm in diameter. Multiple diagnostics were fielded to characterize the x-ray radiation from wire-array Z pinches. The x-ray peak power (∼50 TW) and total radiated energy (∼500 kJ) were obtained from a single 20-mm-diam array with 80-ns stagnation time. The highest x-ray peak power up to 80 TW with 2.4 ns FWHM was achieved by using a nested array with 20-mm outer diameter, and the total x-ray energy from the nested array is comparable to that of single array. Implosion velocity estimated from the time-resolved image measurement exceeds 30 cm/μs. The detailed experimental results and other findings are presented and discussed.

  12. Primary experimental results of wire-array Z-pinches on PTS

    Energy Technology Data Exchange (ETDEWEB)

    Huang, X. B., E-mail: caephxb2003@aliyun.com; Zhou, S. T., E-mail: caephxb2003@aliyun.com; Ren, X. D., E-mail: caephxb2003@aliyun.com; Dan, J. K., E-mail: caephxb2003@aliyun.com; Wang, K. L., E-mail: caephxb2003@aliyun.com; Zhang, S. Q., E-mail: caephxb2003@aliyun.com; Li, J., E-mail: caephxb2003@aliyun.com; Xu, Q., E-mail: caephxb2003@aliyun.com; Cai, H. C., E-mail: caephxb2003@aliyun.com; Duan, S. C., E-mail: caephxb2003@aliyun.com; Ouyang, K., E-mail: caephxb2003@aliyun.com; Chen, G. H., E-mail: caephxb2003@aliyun.com; Ji, C., E-mail: caephxb2003@aliyun.com; Wang, M., E-mail: caephxb2003@aliyun.com; Feng, S. P., E-mail: caephxb2003@aliyun.com; Yang, L. B., E-mail: caephxb2003@aliyun.com; Xie, W. P., E-mail: caephxb2003@aliyun.com; Deng, J. J., E-mail: caephxb2003@aliyun.com [Key Lab of Pulsed Power, Institute of Fluid Physics, CAEP, P.O. Box 919-108, Mianyang, Sichuan 621999 (China)

    2014-12-15

    The Primary Test Stand (PTS) developed at the China Academy of Engineering Physics is a multiterawatt pulsed power driver, which can deliver a ∼10 MA, 70 ns rise-time (10%-90%) current to a short circuit load and has important applications in Z-pinch driven inertial confinement fusion and high energy density physics. In this paper, primary results of tungsten wire-array Z-pinch experiments on PTS are presented. The load geometries investigated include 15-mm-tall cylindrical single and nested arrays with diameter ranging from 14.4-26.4 mm, and consisting of 132∼276 tungsten wires with 5∼10 μm in diameter. Multiple diagnostics were fielded to determine the characteristics of x-ray radiations and to obtain self-emitting images of imploding plasmas. X-ray power up to 80 TW with ∼3 ns FWMH is achieved by using nested wire arrays. The total x-ray energy exceeds 500 kJ and the peak radiation temperature is about 150 eV. Typical velocity of imploding plasmas goes around 3∼5×10{sup 7} cm/s and the radial convergence ratio is between 10 and 20.

  13. Multi-Dimensional Radiation Transport in Dense Z-pinch Wire Array Plasmas

    Science.gov (United States)

    Jennings, C. A.; Chittenden, J. P.; Ciardi, A.; Sherlock, M.; Lebedev, S. V.

    2004-11-01

    Z-pinch wire arrays have proven to be an extremely efficient high yield, short pulse x-ray source with potential application to ICF. The characteristics of the x-ray pulse produced have been shown to be largely determined by non-uniform break up of the wires leading to a highly irregular distribution of mass which implodes towards the axis. Modelling the inherent 3D nature of these plasmas is already computationally very expensive, and so energy exchange through radiation is frequently neglected, assuming instead an optically thin radiation loss model. With a significant fraction of the total energy at late stages being radiated through a dense, optically thick plasma this approach is potentially inadequate in fully describing the implosion. We analyse the effects of radiative cooling and radiation transport on stagnation and precursor development in wire array z-pinch implosions. A three temperature multidimensional MHD code using a single group radiation diffusion model is used to study radiation trapping in the precursor, and the effects of preheating on the implosion dynamics. Energy exchange in the final stagnated plasma and its effects on the x-ray pulse shape is also discussed. This work was partially supported by the SSAA program of the NNSA through DoE cooperative agreement DE-F03-02NA00057.

  14. Spatially resolved single crystal x-ray spectropolarimetry of wire array z-pinch plasmas.

    Science.gov (United States)

    Wallace, M S; Haque, S; Neill, P; Pereira, N R; Presura, R

    2018-01-01

    A recently developed single-crystal x-ray spectropolarimeter has been used to record paired sets of polarization-dependent and axially resolved x-ray spectra emitted by wire array z-pinches. In this measurement, two internal planes inside a suitable crystal diffract the x-rays into two perpendicular directions that are normal to each other, thereby separating incident x-rays into their linearly polarized components. This paper gives considerations for fielding the instrument on extended sources. Results from extended sources are difficult to interpret because generally the incident x-rays are not separated properly by the crystal. This difficulty is mitigated by using a series of collimating slits to select incident x-rays that propagate in a plane of symmetry between the polarization-splitting planes. The resulting instrument and some of the spatially resolved polarized x-ray spectra recorded for a 1-MA aluminum wire array z-pinch at the Nevada Terawatt Facility at the University of Nevada, Reno will be presented.

  15. Use of microsecond current prepulse for dramatic improvements of wire array Z-pinch implosion

    International Nuclear Information System (INIS)

    Calamy, H.; Lassalle, F.; Loyen, A.; Zucchini, F.; Chittenden, J. P.; Hamann, F.; Maury, P.; Georges, A.; Bedoch, J. P.; Morell, A.

    2008-01-01

    The Sphinx machine [F. Lassalle et al., 'Status on the SPHINX machine based on the 1microsecond LTD technology'] based on microsecond linear transformer driver (LTD) technology is used to implode an aluminium wire array with an outer diameter up to 140 mm and maximum current from 3.5 to 5 MA. 700 to 800 ns implosion Z-pinch experiments are performed on this driver essentially with aluminium. Best results obtained before the improvement described in this paper were 1-3 TW radial total power, 100-300 kJ total yield, and 20-30 kJ energy above 1 keV. An auxiliary generator was added to the Sphinx machine in order to allow a multi microsecond current to be injected through the wire array load before the start of the main current. Amplitude and duration of this current prepulse are adjustable, with maxima ∼10 kA and 50 μs. This prepulse dramatically changes the ablation phase leading to an improvement of the axial homogeneity of both the implosion and the final radiating column. Total power was multiplied by a factor of 6, total yield by a factor of 2.5 with a reproducible behavior. This paper presents experimental results, magnetohydrodynamic simulations, and analysis of the effect of such a long current prepulse

  16. Nanocatalytic growth of Si nanowires from Ni silicate coated SiC nanoparticles on Si solar cell.

    Science.gov (United States)

    Parida, Bhaskar; Choi, Jaeho; Ji, Hyung Yong; Park, Seungil; Lim, Gyoungho; Kim, Keunjoo

    2013-09-01

    We investigated the nanocatalytic growth of Si nanowires on the microtextured surface of crystalline Si solar cell. 3C-SiC nanoparticles have been used as the base for formation of Ni silicate layer in a catalytic reaction with the Si melt under H2 atmosphere at an annealing temperature of 1100 degrees C. The 10-nm thick Ni film was deposited after the SiC nanoparticles were coated on the microtextured surface of the Si solar cell by electron-beam evaporation. SiC nanoparticles form a eutectic alloy surface of Ni silicate and provide the base for Si supersaturation as well as the Ni-Si alloy layer on Si substrate surface. This bottom reaction mode for the solid-liquid-solid growth mechanism using a SiC nanoparticle base provides more stable growth of nanowires than the top reaction mode growth mechanism in the absence of SiC nanoparticles. Thermally excited Ni nanoparticle forms the eutectic alloy and provides collectively excited electrons at the alloy surface, which reduces the activation energy of the nanocatalytic reaction for formation of nanowires.

  17. Integration of Solar Cells on Top of CMOS Chips Part I: a-Si Solar Cells

    NARCIS (Netherlands)

    Lu, J.; Kovalgin, Alexeij Y.; van der Werf, Karine H.M.; Schropp, Ruud E.I.; Schmitz, Jurriaan

    2011-01-01

    We present the monolithic integration of deepsubmicrometer complementary metal–oxide–semiconductor (CMOS) microchips with a-Si:H solar cells. Solar cells are manufactured directly on the CMOS chips. The microchips maintain comparable electronic performance, and the solar cells show efficiency values

  18. Effect of the Phosphorus Gettering on Si Heterojunction Solar Cells

    Directory of Open Access Journals (Sweden)

    Hyomin Park

    2012-01-01

    Full Text Available To improve the efficiency of crystalline silicon solar cells, should be collected the excess carrier as much as possible. Therefore, minimizing the recombination both at the bulk and surface regions is important. Impurities make recombination sites and they are the major reason for recombination. Phosphorus (P gettering was introduced to reduce metal impurities in the bulk region of Si wafers and then to improve the efficiency of Si heterojunction solar cells fabricated on the wafers. Resistivity of wafers was measured by a four-point probe method. Fill factor of solar cells was measured by a solar simulator. Saturation current and ideality factor were calculated from a dark current density-voltage graph. External quantum efficiency was analyzed to assess the effect of P gettering on the performance of solar cells. Minority bulk lifetime measured by microwave photoconductance decay increases from 368.3 to 660.8 μs. Open-circuit voltage and short-circuit current density increase from 577 to 598 mV and 27.8 to 29.8 mA/cm2, respectively. The efficiency of solar cells increases from 11.9 to 13.4%. P gettering will be feasible to improve the efficiency of Si heterojunction solar cells fabricated on P-doped Si wafers.

  19. High performance a-Si solar cells and new fabrication methods for a-Si solar cells

    Science.gov (United States)

    Nakano, S.; Kuwano, Y.; Ohnishi, M.

    1986-12-01

    The super chamber, a separated UHV reaction-chamber system has been developed. A conversion efficiency of 11.7% was obtained for an a-Si solar cell using a high-quality i-layer deposited by the super chamber, and a p-layer fabricated by a photo-CVD method. As a new material, amorphous superlattice-structure films were fabricated by the photo-CVD method for the first time. Superlattice structure p-layer a-Si solar cells were fabricated, and a conversion efficiency of 10.5% was obtained. For the fabrication of integrated type a-Si solar cell modules, a laser pattering method was investigated. A thermal analysis of the multilayer structure was done. It was confirmed that selective scribing for a-Si, TCO and metal film is possible by controlling the laser power density. Recently developed a-Si solar power generation systems and a-Si solar cell roofing tiles are also described.

  20. Effects of Mass Ablation on the Scaling of X-Ray Power with Current in Wire-Array Z Pinches

    International Nuclear Information System (INIS)

    Lemke, R. W.; Sinars, D. B.; Waisman, E. M.; Cuneo, M. E.; Yu, E. P.; Haill, T. A.; Hanshaw, H. L.; Brunner, T. A.; Jennings, C. A.; Stygar, W. A.; Desjarlais, M. P.; Mehlhorn, T. A.; Porter, J. L.

    2009-01-01

    X-ray production by imploding wire-array Z pinches is studied using radiation magnetohydrodynamics simulation. It is found that the density distribution created by ablating wire material influences both x-ray power production, and how the peak power scales with applied current. For a given array there is an optimum ablation rate that maximizes the peak x-ray power, and produces the strongest scaling of peak power with peak current. This work is consistent with trends in wire-array Z pinch x-ray power scaling experiments on the Z accelerator

  1. Planar wire array dynamics and radiation scaling at multi-MA levels on the Saturn pulsed power generator

    International Nuclear Information System (INIS)

    Chuvatin, Alexander S.; Vesey, Roger Alan; Waisman, Eduardo Mario; Esaulov, Andrey A.; Ampleford, David J.; Kantsyrev, Victor Leonidovich; Cuneo, Michael Edward; Rudakov, Leonid I.; Coverdale, Christine Anne; Jones, Brent Manley; Safronova, Alla S.; Jones, Michael C.

    2008-01-01

    Planar wire arrays are studied at 3-6 MA on the Saturn pulsed power generator as potential drivers of compact hohlraums for inertial confinement fusion studies. Comparison with zero-dimensional modeling suggests that there is significant trailing mass. The modeled energy coupled from the generator cannot generally explain the energy in the main x-ray pulse. Preliminary comparison at 1-6 MA indicates sub-quadratic scaling of x-ray power in a manner similar to compact cylindrical wire arrays. Time-resolved pinhole images are used to study the implosion dynamics

  2. Theory of wire number scaling in wire-array Z pinches

    International Nuclear Information System (INIS)

    Desjarlais, M.P.; Marder, B.M.

    1999-01-01

    Pulsed-power-driven Z pinches, produced by imploding cylindrical arrays of many wires, have generated very high x-ray radiation powers (>200 TW) and energies (2 MJ). Experiments have revealed a steady improvement in Z-pinch performance with increasing wire number at fixed total mass and array radius. The dominant mechanism acting to limit the performance of these devices is believed to be the Rayleigh-Taylor instability which broadens the radially imploding plasma sheath and consequently reduces the peak radiation power. A model is presented which describes an amplification over the two-dimensional Rayleigh-Taylor growth rate brought about by kink-like forces on the individual wires. This amplification factor goes to zero as the number of wires approaches infinity. This model gives results which are in good agreement with the experimental data and provides a scaling for wire-array Z pinches. copyright 1999 American Institute of Physics

  3. Wire array Z-pinch insights for enhanced x-ray production

    Energy Technology Data Exchange (ETDEWEB)

    Sanford, T.W.; Mock, R.C.; Spielman, R.B. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1196 (United States); Haines, M.G.; Chittenden, J.P. [The Blackett Laboratory, Imperial College, London, SW7 2BZ (United Kingdom); Whitney, K.G.; Apruzese, J.P. [Naval Research Laboratory, Radiation Hydrodynamics Branch, Washington, D.C. 20375 (United States); Peterson, D.L. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Greenly, J.B.; Sinars, D.B. [Laboratory of Plasma Studies, Cornell University, Ithaca, New York 14853 (United States); Reisman, D.B. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States); Mosher, D. [Naval Research Laboratory, Pulsed Power Physics Branch, Washington, D.C. 20375 (United States)

    1999-05-01

    Comparisons of measured total radiated x-ray power from annular wire-array {ital z}-pinches with a variety of models as a function of wire number, array mass, and load radius are reviewed. The data, which are comprehensive, have provided important insights into the features of wire-array dynamics that are critical for high x-ray power generation. Collectively, the comparisons of the data with the model calculations suggest that a number of underlying dynamical mechanisms involving cylindrical asymmetries and plasma instabilities contribute to the measured characteristics. For example, under the general assumption that the measured risetime of the total-radiated-power pulse is related to the thickness of the plasma shell formed on axis, the Heuristic Model [IEEE Trans. Plasma Sci. {bold 26}, 1275 (1998)] agrees with the measured risetime under a number of specific assumptions about the way the breakdown of the wires, the wire-plasma expansion, and the Rayleigh{endash}Taylor instability in the r{endash}z plane, develop. Likewise, in the high wire-number regime (where the wires are calculated to form a plasma shell prior to significant radial motion of the shell) the comparisons show that the variation in the power of the radiation generated as a function of load mass and array radius can be simulated by the two-dimensional Eulerian-radiation- magnetohydrodynamics code (E-RMHC) [Phys. Plasmas {bold 3}, 368 (1996)], using a single random-density perturbation that seeds the Rayleigh{endash}Taylor instability in the r{endash}z plane. For a given pulse-power generator, the comparisons suggest that (1) the smallest interwire gaps compatible with practical load construction and (2) the minimum implosion time consistent with the optimum required energy coupling of the generator to the load should produce the highest total-radiated-power levels. {copyright} {ital 1999 American Institute of Physics.}

  4. Wire array Z-pinch insights for enhanced x-ray production

    Science.gov (United States)

    Sanford, T. W. L.; Mock, R. C.; Spielman, R. B.; Haines, M. G.; Chittenden, J. P.; Whitney, K. G.; Apruzese, J. P.; Peterson, D. L.; Greenly, J. B.; Sinars, D. B.; Reisman, D. B.; Mosher, D.

    1999-05-01

    Comparisons of measured total radiated x-ray power from annular wire-array z-pinches with a variety of models as a function of wire number, array mass, and load radius are reviewed. The data, which are comprehensive, have provided important insights into the features of wire-array dynamics that are critical for high x-ray power generation. Collectively, the comparisons of the data with the model calculations suggest that a number of underlying dynamical mechanisms involving cylindrical asymmetries and plasma instabilities contribute to the measured characteristics. For example, under the general assumption that the measured risetime of the total-radiated-power pulse is related to the thickness of the plasma shell formed on axis, the Heuristic Model [IEEE Trans. Plasma Sci. 26, 1275 (1998)] agrees with the measured risetime under a number of specific assumptions about the way the breakdown of the wires, the wire-plasma expansion, and the Rayleigh-Taylor instability in the r-z plane, develop. Likewise, in the high wire-number regime (where the wires are calculated to form a plasma shell prior to significant radial motion of the shell) the comparisons show that the variation in the power of the radiation generated as a function of load mass and array radius can be simulated by the two-dimensional Eulerian-radiation- magnetohydrodynamics code (E-RMHC) [Phys. Plasmas 3, 368 (1996)], using a single random-density perturbation that seeds the Rayleigh-Taylor instability in the r-z plane. For a given pulse-power generator, the comparisons suggest that (1) the smallest interwire gaps compatible with practical load construction and (2) the minimum implosion time consistent with the optimum required energy coupling of the generator to the load should produce the highest total-radiated-power levels.

  5. Wire Array Z-Pinch Insights for Enhanced X-Ray Production

    Energy Technology Data Exchange (ETDEWEB)

    Apruzese, J.P.; Chittenden, J.P.; Greenly, J.B.; Haines, M.G.; Mock, R.C.; Mosher, D.; Peterson, D.L.; Reisman, D.B.; Sanford, T.W.L.; Sinars, D.B.; Spielman, R.B.; Whitnery, K.G.

    1999-01-04

    Comparisons of measured total radiated x-ray power from annular wire-array z-pinches with a variety of models as a function of wire number, array mass, and load radius are reviewed. The data, which are comprehensive, have provided important insights into the features of wire-array dynamics that are critical for high x-ray power generation. Collectively, the comparisons of the data with the model calculations suggest that a number of underlying dynamical mechanisms involving cylindrical asymmetries and plasma instabilities contribute to the measured characteristics. For example, under the general assumption that the measured risetime of the total-radiated-power pulse is related to the thickness of the plasma shell formed on axis, the Heuristic Model [IEEE Trans. Plasma Sci., 26, 1275 (1998)] agrees with the measured risetime under a number of specific assumptions about the way the breakdown of the wires, the wire-plasma expansion, and the Rayleigh-Taylor instability in the r-z plane, interact. Likewise, in the high wire-number regime (where the wires are calculated to form a plasma shell prior to significant radial motion of the shell) the comparisons show that the variation in the power of the radiation generated as a function of load mass and array radius can be simulated by the 2-D Eulerian-radiation-magnetohydrodynamics code (E-RMHC) [Phys. Plasmas 3, 368 (1996)], using a single random-density perturbation that seeds the Rayleigh-Taylor instability in the r-z plane. For a given pulse-power generator, the comparisons suggest that (1) the smallest interwire gaps compatible with practical load construction and (2) the minimum implosion time consistent with the optimum required energy coupling of the generator to the load should produce the highest total-radiated-power levels.

  6. Wire array Z-pinch insights for enhanced x-ray production

    International Nuclear Information System (INIS)

    Sanford, T.W.; Mock, R.C.; Spielman, R.B.; Haines, M.G.; Chittenden, J.P.; Whitney, K.G.; Apruzese, J.P.; Peterson, D.L.; Greenly, J.B.; Sinars, D.B.; Reisman, D.B.; Mosher, D.

    1999-01-01

    Comparisons of measured total radiated x-ray power from annular wire-array z-pinches with a variety of models as a function of wire number, array mass, and load radius are reviewed. The data, which are comprehensive, have provided important insights into the features of wire-array dynamics that are critical for high x-ray power generation. Collectively, the comparisons of the data with the model calculations suggest that a number of underlying dynamical mechanisms involving cylindrical asymmetries and plasma instabilities contribute to the measured characteristics. For example, under the general assumption that the measured risetime of the total-radiated-power pulse is related to the thickness of the plasma shell formed on axis, the Heuristic Model [IEEE Trans. Plasma Sci. 26, 1275 (1998)] agrees with the measured risetime under a number of specific assumptions about the way the breakdown of the wires, the wire-plasma expansion, and the Rayleigh - Taylor instability in the r - z plane, develop. Likewise, in the high wire-number regime (where the wires are calculated to form a plasma shell prior to significant radial motion of the shell) the comparisons show that the variation in the power of the radiation generated as a function of load mass and array radius can be simulated by the two-dimensional Eulerian-radiation- magnetohydrodynamics code (E-RMHC) [Phys. Plasmas 3, 368 (1996)], using a single random-density perturbation that seeds the Rayleigh - Taylor instability in the r - z plane. For a given pulse-power generator, the comparisons suggest that (1) the smallest interwire gaps compatible with practical load construction and (2) the minimum implosion time consistent with the optimum required energy coupling of the generator to the load should produce the highest total-radiated-power levels. copyright 1999 American Institute of Physics

  7. Wire Array Z-Pinch Insights for Enhanced X-Ray Production

    International Nuclear Information System (INIS)

    Apruzese, J.P.; Chittenden, J.P.; Greenly, J.B.; Haines, M.G.; Mock, R.C.; Mosher, D.; Peterson, D.L.; Reisman, D.B.; Sanford, T.W.L.; Sinars, D.B.; Spielman, R.B.; Whitnery, K.G.

    1999-01-01

    Comparisons of measured total radiated x-ray power from annular wire-array z-pinches with a variety of models as a function of wire number, array mass, and load radius are reviewed. The data, which are comprehensive, have provided important insights into the features of wire-array dynamics that are critical for high x-ray power generation. Collectively, the comparisons of the data with the model calculations suggest that a number of underlying dynamical mechanisms involving cylindrical asymmetries and plasma instabilities contribute to the measured characteristics. For example, under the general assumption that the measured risetime of the total-radiated-power pulse is related to the thickness of the plasma shell formed on axis, the Heuristic Model [IEEE Trans. Plasma Sci., 26, 1275 (1998)] agrees with the measured risetime under a number of specific assumptions about the way the breakdown of the wires, the wire-plasma expansion, and the Rayleigh-Taylor instability in the r-z plane, interact. Likewise, in the high wire-number regime (where the wires are calculated to form a plasma shell prior to significant radial motion of the shell) the comparisons show that the variation in the power of the radiation generated as a function of load mass and array radius can be simulated by the 2-D Eulerian-radiation-magnetohydrodynamics code (E-RMHC) [Phys. Plasmas 3, 368 (1996)], using a single random-density perturbation that seeds the Rayleigh-Taylor instability in the r-z plane. For a given pulse-power generator, the comparisons suggest that (1) the smallest interwire gaps compatible with practical load construction and (2) the minimum implosion time consistent with the optimum required energy coupling of the generator to the load should produce the highest total-radiated-power levels

  8. C-Si solar cell modules

    International Nuclear Information System (INIS)

    Tomita, Takashi

    2005-01-01

    In order to meet the rapidly growing demand for solar power photovoltaic systems which is based on public consciousness of global environmental issues, SHARP has increased the production of solar cells and modules over 10-fold in the last 5 years. Silicon-based technologies are expected to be dominant in the coming decade. In the course of an increase of the annual production scale to 1000 MW, the efficiency of modules will be improved and the thickness of wafers will be decreased and all this will lead to a drastic price reduction of PV systems. (Author)

  9. Light trapping of crystalline Si solar cells by use of nanocrystalline Si layer plus pyramidal texture

    Energy Technology Data Exchange (ETDEWEB)

    Imamura, Kentaro; Nonaka, Takaaki; Onitsuka, Yuya; Irishika, Daichi; Kobayashi, Hikaru, E-mail: h.kobayashi@sanken.osaka-u.ac.jp

    2017-02-15

    Highlights: • Ultralow reflectivity Si wafers with light trapping effect can be obtained by forming a nanocrystalline Si layer on pyramidal textured Si surfaces. • Surface passivation using phosphosilicate glass improved minority carrier lifetime of the nanocrystalline Si layer/Si structure. • A high photocurrent density of 40.1 mA/cm{sup 2}, and a high conversion efficiency of 18.5% were achieved. - Abstract: The surface structure chemical transfer (SSCT) method has been applied to fabrication of single crystalline Si solar cells with 170 μm thickness. The SSCT method, which simply involves immersion of Si wafers in H{sub 2}O{sub 2} plus HF solutions and contact of Pt catalyst with Si taking only ∼30 s for 6 in. wafers, can decrease the reflectivity to less than 3% by the formation of a nanocrystalline Si layer. However, the reflectivity of the nanocrystalline Si layer/flat Si surface/rear Ag electrode structure in the wavelength region longer than 1000 nm is high because of insufficient absorption of incident light. The reflectivity in the long wavelength region is greatly decreased by the formation of the nanocrystalline Si layer on pyramidal textured Si surfaces due to an increase in the optical path length. Deposition of phosphosilicate glass (PSG) on the nanocrystalline Si layer for formation of pn-junction does not change the ultralow reflectivity because the surface region of the nanocrystalline Si layer possesses a refractive index of 1.4 which is nearly the same as that of PSG of 1.4–1.5. The PSG layer is found to passivate the nanocrystalline Si layer, which is evident from an increase in the minority carrier lifetime from 12 to 44 μs. Hydrogen treatment at 450 °C further increases the minority carrier lifetime approximately to a doubled value. The solar cells with the Si layer/pyramidal Si substrate/boron-diffused back surface field/Ag rear electrode> structure show a high conversion efficiency of 18

  10. Research on ZnO/Si heterojunction solar cells

    DEFF Research Database (Denmark)

    Chen, Li; Chen, Xinliang; Liu, Yiming

    2017-01-01

    We put forward an n-ZnO/p-Si heterojunction solar cell model based on AFORS-HET simulations and provide experimental support in this article. ZnO: B (B-doped ZnO) thin films deposited by metal-organic chemical vapor deposition (MOCVD) are planned to act as electrical emitter layer on p-type c...

  11. An Isotope Study of Hydrogenation of poly-Si/SiOx Passivated Contacts for Si Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Schnabel, Manuel; Nemeth, William; van de Loo, Bas, W.H.; Macco, Bart; Kessels, Wilhelmus, M.M.; Stradins, Paul; Young, David, L.

    2017-06-26

    For many years, the record Si solar cell efficiency stood at 25.0%. Only recently have several companies and institutes managed to produce more efficient cells, using passivated contacts of made doped poly-Si or a-Si:H and a passivating intrinsic interlayer in all cases. Common to these designs is the need to passivate the layer stack with hydrogen. In this contribution, we perform a systematic study of passivated contact passivation by hydrogen, using poly-Si/SiOx passivated contacts on n-Cz-Si, and ALD Al2O3 followed by a forming gas anneal (FGA) as the hydrogen source. We study p-type and n-type passivated contacts with implied Voc exceeding 690 and 720 mV, respectively, and perform either the ALD step or the FGA with deuterium instead of hydrogen in order to separate the two processes via SIMS. By examining the deuterium concentration at the SiOx in both types of samples, we demonstrate that the FGA supplies negligible hydrogen species to the SiOx, regardless of whether the FGA is hydrogenated or deuterated. Instead, it supplies the thermal energy needed for hydrogen species in the Al2O3 to diffuse there. Furthermore, the concentration of hydrogen species at the SiOx can saturate while implied Voc continues to increase, showing that the energy from the FGA is also required for hydrogen species already at the SiOx to find recombination-active defects to passivate.

  12. SiNTO EWT silicon solar cells

    OpenAIRE

    Fallisch, A.; Keding, R.; Kästner, G.; Bartsch, J.; Werner, S.; Stüwe, D.; Specht, J.; Preu, R.; Biro, D.

    2010-01-01

    In this work we combine the SiNTO cell process with the EWT cell concept. All masking steps are performed by inkjet printing technology. The via-holes and laser-fired contacts are created by high-speed laser drilling. A new polishing process, which is suitable for inkjet masking, to pattern the interdigitated grid on the rear side is developed. For passivation purposes a thermal silicon oxide is used for the rear surface and a silicon nitride antireflection coating for the front surface. An e...

  13. Semiconductor wire array structures, and solar cells and photodetectors based on such structures

    Science.gov (United States)

    Kelzenberg, Michael D.; Atwater, Harry A.; Briggs, Ryan M.; Boettcher, Shannon W.; Lewis, Nathan S.; Petykiewicz, Jan A.

    2014-08-19

    A structure comprising an array of semiconductor structures, an infill material between the semiconductor materials, and one or more light-trapping elements is described. Photoconverters and photoelectrochemical devices based on such structure also described.

  14. Experimental study on imploding characteristics of wire-array Z pinches on Qiangguang-1 facility

    Institute of Scientific and Technical Information of China (English)

    Wang Zhen; Xu Rong-Kun; Yang Jian-Lun; Hua Xin-Sheng; Li Lin-Bo; Xu Ze-Ping; Ning Jia-Min; Song Feng-Jun

    2007-01-01

    To investigate the imploding characteristics of cylindrical wire array,experiments with load current varying from 1.5MA to 1.7MA were carried out on the Qiangguang-1 facility.The complicated temporal-spatial distribution of x-ray radiation was measured by the one-dimensional (1D) x-ray imaging system.Other diagnostic equipments including the x-ray power meter(XRPM) and the time-integrated pinhole camera were used to record time-resolved x-ray power pulse and pinhole x-ray images.Analysis shows that the fast leading edge of the local x-ray radiation pulse is of primary importance in sharpening x-ray power pulse rather than the temporal synchrony and the spatial uniformity of implosion.Experimental results indicated that the better axial imploding synchrony,the faster the increase of X-ray power for an array consisting of 32 tungsten wires of 5μm diameter than for the others,and the higher the x-ray radiation power with maximal convergence ratio (r0/r1) of 10.5.A 'zipper-like' effect of x-ray radiation extending from the cathode Was also observed.

  15. Electroluminescence of a-Si/c-Si heterojunction solar cells after high energy irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Ferrara, Manuela

    2009-11-24

    The crystalline silicon as absorber material will certainly continue to dominate the market for space applications of solar cells. In the contribution under consideration the applicability of a-Si:H/c-Si heterojunction solar cells in space has been tested by the investigation of the cell modification by high energy protons and comparing the results to the degradation of homojunction crystalline silicon reference cells. The investigated solar cells have been irradiated with protons of different energies and doses. For all investigated solar cells the maximum damage happens for an energy of about 1.7 MeV and is mainly due to the decrease of the effective minority carrier diffusion length in the crystalline silicon absorber. Simulations carried out by AFORS-HET, a heterojunction simulation program, also confirmed this result. The main degradation mechanism for all types of devices is the monotonically decreasing charge carrier diffusion length in the p-type monocrystalline silicon absorber layer. For the heterojunction solar cell an enhancement of the photocurrent in the blue wavelength region has been observed but only in the case of heterojunction solar cell with intrinsic a-Si:H buffer layer. Additionally to the traditional characterization techniques the electroluminescence technique used for monitoring the modifications of the heteroluminescence technique used for monitoring the modifications of the heterointerface between amorphous silicon and crystalline silicon in solar cells after proton irradiation. A direct relation between minority carrier diffusion length and electroluminescence quantum efficiency has been observed but also details of the interface modification could be monitored by this technique.

  16. Development of thin-film Si HYBRID solar module

    Energy Technology Data Exchange (ETDEWEB)

    Nakajima, Akihiko; Gotoh, Masahiro; Sawada, Toru; Fukuda, Susumu; Yoshimi, Masashi; Yamamoto, Kenji; Nomura, Takuji [Kaneka Corporation, 2-1-1, Hieitsuji, Otsu, Shiga 520-0104 (Japan)

    2009-06-15

    The device current-voltage (I-V) characteristics of thin-film silicon stacked tandem solar modules (HYBRID modules), consisting of a hydrogenated amorphous silicon (a-Si:H) cell and a thin-film crystalline silicon solar cell ({mu}c-Si), have been investigated under various spectral irradiance distributions. The performance of the HYBRID module varied periodically in natural sunlight due to the current-limiting property of the HYBRID module and the environmental effects. The behavior based on the current-limiting property was demonstrated by the modelling of the I-V curves using the linear interpolation method for each component cell. The improvement of the performance for the HYBRID module in natural sunlight will also be discussed from the viewpoint of the device design of the component cells. (author)

  17. Numerical and experimental investigations on the interaction of light wire-array Z-pinches with embedded heavy foam converters

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Delong; Ding, Ning; Sun, Shunkai [Institute of Applied Physics and Computational Mathematics, Beijing 100088 (China); Ye, Fan; Ning, Jiamin; Hu, Qingyuan; Chen, Faxin; Qin, Yi; Xu, Rongkun; Li, Zhenghong [Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900 (China)

    2014-04-15

    The interaction of a light tungsten wire-array Z-pinch with an embedded heavy foam converter, whose mass ratio is typically less than 0.16, is numerically analyzed and experimentally investigated on the 1.3 MA “QiangGuang I” facility. Computational results show that this implosion process can be divided into three stages: acceleration of the tungsten wire-array plasma, collision, and stagnation. The tungsten plasma is accelerated to a high speed by the J × B force and interacts weakly with the foam plasma in the first stage. Strong energy conversions take place in the second collision stage. When the high speed tungsten plasma impacts on the foam converter, the plasma is thermalized and a radial radiation peak is produced. Meanwhile, a shock wave is generated due to the collision. After the shock rebounds from the axis and meets the W/Foam boundary, the plasma stagnates and the second radial radiation peak appears. The collision and stagnation processes were observed and the two-peak radial radiation pulse was produced in experiments. Increasing the wire-array radius from 4 mm to 6 mm, the kinetic energy of the tungsten plasma is increased, causing a stronger thermalization and generating a higher first radiation peak. Experimental results also showed a higher ratio of the first peak to the second peak in the case of larger wire-array radius. If we add a thin CH film cover onto the surface of the embedded foam converter, the first radiation peak will be hardly changed, because the acceleration of the tungsten plasma is not evidently affected by the film cover. However, the second radiation peak decreases remarkably due to the large load mass and the corresponding weak compression.

  18. Wire Array Z-pinches on Sphinx Machine: Experimental Results and Relevant Points of Microsecond Implosion Physics

    Science.gov (United States)

    Calamy, H.; Hamann, F.; Lassalle, F.; Bayol, F.; Mangeant, C.; Morell, A.; Huet, D.; Bedoch, J. P.; Chittenden, J. P.; Lebedev, S. V.; Jennings, C. A.; Bland, S. N.

    2006-01-01

    Centre d'Etudes de Gramat (France) has developed an efficient long implosion time (800 ns) Aluminum plasma radiation source (PRS). Based on the LTD technology, the SPHINX facility is developed as a 1-3MJ, 1μs rise time, 4-10 MA current driver. In this paper, it was used in 1MJ, 4MA configuration to drive Aluminum nested wire arrays Z-pinches with K-shell yield up to 20 kJ and a FWHM of the x-ray pulse of about 50 ns. We present latest SPHINX experiments and some of the main physic issues of the microsecond regime. Experimental setup and results are described with the aim of giving trends that have been obtained. The main features of microsecond implosion of wire arrays can be analyzed thanks to same methods and theories as used for faster Z-pinches. The effect of load polarity was examined. The stability of the implosion , one of the critical point of microsecond wire arrays due to the load dimensions imposed by the time scale, is tackled. A simple scaling from 100 ns Z-pinch results to 800 ns ones gives good results and the use of nested arrays improves dramatically the implosion quality and the Kshell yield of the load. However, additional effects such as the impact of the return current can geometry on the implosion have to be taken into account on our loads. Axial inhomogeneity of the implosion the origin of which is not yet well understood occurs in some shots and impacts the radiation output. The shape of the radiative pulse is discussed and compared with the homogeneity of the implosion. Numerical 2D R-Z and R-θ simulations are used to highlight some experimental results and understand the plasma conditions during these microsecond wire arrays implosions.

  19. Wire Array Z-pinches on Sphinx Machine: Experimental Results and Relevant Points of Microsecond Implosion Physics

    International Nuclear Information System (INIS)

    Calamy, H.; Hamann, F.; Lassalle, F.; Bayol, F.; Mangeant, C.; Morell, A.; Huet, D.; Bedoch, J.P.; Chittenden, J.P.; Lebedev, S.V.; Jennings, C.A.; Bland, S.N.

    2006-01-01

    Centre d'Etudes de Gramat (France) has developed an efficient long implosion time (800 ns) Aluminum plasma radiation source (PRS). Based on the LTD technology, the SPHINX facility is developed as a 1-3MJ, 1μs rise time, 4-10 MA current driver. In this paper, it was used in 1MJ, 4MA configuration to drive Aluminum nested wire arrays Z-pinches with K-shell yield up to 20 kJ and a FWHM of the x-ray pulse of about 50 ns. We present latest SPHINX experiments and some of the main physic issues of the microsecond regime. Experimental setup and results are described with the aim of giving trends that have been obtained. The main features of microsecond implosion of wire arrays can be analyzed thanks to same methods and theories as used for faster Z-pinches. The effect of load polarity was examined. The stability of the implosion , one of the critical point of microsecond wire arrays due to the load dimensions imposed by the time scale, is tackled. A simple scaling from 100 ns Z-pinch results to 800 ns ones gives good results and the use of nested arrays improves dramatically the implosion quality and the Kshell yield of the load. However, additional effects such as the impact of the return current can geometry on the implosion have to be taken into account on our loads. Axial inhomogeneity of the implosion the origin of which is not yet well understood occurs in some shots and impacts the radiation output. The shape of the radiative pulse is discussed and compared with the homogeneity of the implosion. Numerical 2D R-Z and R-θ simulations are used to highlight some experimental results and understand the plasma conditions during these microsecond wire arrays implosions

  20. Back scattering involving embedded silicon nitride (SiN) nanoparticles for c-Si solar cells

    Science.gov (United States)

    Ghosh, Hemanta; Mitra, Suchismita; Siddiqui, M. S.; Saxena, A. K.; Chaudhuri, Partha; Saha, Hiranmay; Banerjee, Chandan

    2018-04-01

    A novel material, structure and method of synthesis for dielectric light trapping have been presented in this paper. First, the light scattering behaviour of silicon nitride nanoparticles have been theoretically studied in order to find the optimized size for dielectric back scattering by FDTD simulations from Lumerical Inc. The optical results have been used in electrical analysis and thereby, estimate the effect of nanoparticles on efficiency of the solar cells depending on substrate thickness. Experimentally, silicon nitride (SiN) nanoparticles have been formed using hydrogen plasma treatment on SiN layer deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD). The size and area coverage of the nanoparticles were controlled by varying the working pressure, power density and treatment duration. The nanoparticles were integrated with partial rear contact c-Si solar cells as dielectric back reflector structures for the light trapping in thin silicon solar cells. Experimental results revealed the increases of current density by 2.7% in presence of SiN nanoparticles.

  1. Research on ZnO/Si heterojunction solar cells

    Science.gov (United States)

    Chen, Li; Chen, Xinliang; Liu, Yiming; Zhao, Ying; Zhang, Xiaodan

    2017-06-01

    We put forward an n-ZnO/p-Si heterojunction solar cell model based on AFORS-HET simulations and provide experimental support in this article. ZnO:B (B-doped ZnO) thin films deposited by metal-organic chemical vapor deposition (MOCVD) are planned to act as electrical emitter layer on p-type c-Si substrate for photovoltaic applications. We investigate the effects of thickness, buffer layer, ZnO:B affinity and work function of electrodes on performances of solar cells through computer simulations using AFORS-HET software package. The energy conversion efficiency of the ZnO:B(n)/ZnO/c-Si(p) solar cell can achieve 17.16% ({V}{oc}: 675.8 mV, {J}{sc}: 30.24 mA/cm2, FF: 83.96%) via simulation. On a basis of optimized conditions in simulation, we carry out some experiments, which testify that the ZnO buffer layer of 20 nm contributes to improving performances of solar cells. The influences of growth temperature, thickness and diborane (B2H6) flow rates are also discussed. We achieve an appropriate condition for the fabrication of the solar cells using the MOCVD technique. The obtained conversion efficiency reaches 2.82% ({V}{oc}: 294.4 mV, {J}{sc}: 26.108 mA/cm2, FF: 36.66%). Project supported by the State Key Development Program for Basic Research of China (Nos. 2011CBA00706, 2011CBA00707), the Tianjin Applied Basic Research Project and Cutting-Edge Technology Research Plan (No. 13JCZDJC26900), the Tianjin Major Science and Technology Support Project (No. 11TXSYGX22100), the National High Technology Research and Development Program of China (No. 2013AA050302), and the Fundamental Research Funds for the Central Universities (No. 65010341).

  2. Optimization of ITO layers for applications in a-Si/c-Si heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Pla, J.; Tamasi, M.; Rizzoli, R.; Losurdo, M.; Centurioni, E.; Summonte, C.; Rubinelli, F

    2003-02-03

    A detailed study of the properties of indium tin oxide (ITO) thin films used as antireflecting front electrodes in a-Si/c-Si heterojunction solar cells is presented. The deposition conditions of ITO layers by radiofrequency magnetron sputtering were optimized for heterojunction solar cells applications. The X-ray photoelectron spectroscopy analysis of the deposited films allowed for a correlation between the film composition and the experimental parameters used in the sputtering process. The ITO thickness was optimized considering the thickness of the a-Si emitter layer, its optical characteristics and the heterojunction solar cell spectral response. In our devices, the optimal thickness calculated for the ITO film was in the range 80-95 nm, depending on the solar cell spectral response, and a thickness tolerance of {+-}10 nm was found to be suitable to limit the degradation of the device performance. Finally, device simulation results obtained by the 'Analysis of Microelectronic and Photonic Structures' code are reported.

  3. Conversion of electromagnetic energy in Z-pinch process of single planar wire arrays at 1.5 MA

    International Nuclear Information System (INIS)

    Liangping, Wang; Mo, Li; Juanjuan, Han; Ning, Guo; Jian, Wu; Aici, Qiu

    2014-01-01

    The electromagnetic energy conversion in the Z-pinch process of single planar wire arrays was studied on Qiangguang generator (1.5 MA, 100 ns). Electrical diagnostics were established to monitor the voltage of the cathode-anode gap and the load current for calculating the electromagnetic energy. Lumped-element circuit model of wire arrays was employed to analyze the electromagnetic energy conversion. Inductance as well as resistance of a wire array during the Z-pinch process was also investigated. Experimental data indicate that the electromagnetic energy is mainly converted to magnetic energy and kinetic energy and ohmic heating energy can be neglected before the final stagnation. The kinetic energy can be responsible for the x-ray radiation before the peak power. After the stagnation, the electromagnetic energy coupled by the load continues increasing and the resistance of the load achieves its maximum of 0.6–1.0 Ω in about 10–20 ns

  4. Mass accretion and nested array dynamics from Ni-Clad Ti-Al wire array Z pinches

    International Nuclear Information System (INIS)

    Jones, Brent Manley; Jennings, Christopher A.; Coverdale, Christine Anne; Cuneo, Michael Edward; Maron, Yitzhak; LePell, Paul David; Deeney, Christopher

    2010-01-01

    Analysis of 50 mm diameter wire arrays at the Z Accelerator has shown experimentally the accretion of mass in a stagnating z pinch and provided insight into details of the radiating plasma species and plasma conditions. This analysis focused on nested wire arrays with a 2:1 (outeninner) mass, radius, and wire number ratio where Al wires were fielded on the outer array and Ni-clad Ti wires were fielded on the inner array.In this presentation, we will present analysis of data from other mixed Al/Ni-clad Ti configurations to further evaluate nested wire array dynamics and mass accretion. These additional configurations include the opposite configuration to that described above (Ni-clad Ti wires on the outer array, with Al wires on the inner array) as well as higher wire number Al configurations fielded to vary the interaction of the two arrays. These same variations were also assessed for a smaller diameter nested array configuration (40 mm). Variations in the emitted radiation and plasma conditions will be presented, along with a discussion of what the results indicate about the nested array dynamics. Additional evidence for mass accretion will also be presented.

  5. Realization of Colored Multicrystalline Silicon Solar Cells with SiO2/SiNx:H Double Layer Antireflection Coatings

    Directory of Open Access Journals (Sweden)

    Minghua Li

    2013-01-01

    Full Text Available We presented a method to use SiO2/SiNx:H double layer antireflection coatings (DARC on acid textures to fabricate colored multicrystalline silicon (mc-Si solar cells. Firstly, we modeled the perceived colors and short-circuit current density (Jsc as a function of SiNx:H thickness for single layer SiNx:H, and as a function of SiO2 thickness for the case of SiO2/SiNx:H (DARC with fixed SiNx:H (refractive index n=2.1 at 633 nm, and thickness = 80 nm. The simulation results show that it is possible to achieve various colors by adjusting the thickness of SiO2 to avoid significant optical losses. Therefore, we carried out the experiments by using electron beam (e-beam evaporation to deposit a layer of SiO2 over the standard SiNx:H for 156×156 mm2 mc-Si solar cells which were fabricated by a conventional process. Semisphere reflectivity over 300 nm to 1100 nm and I-V measurements were performed for grey yellow, purple, deep blue, and green cells. The efficiency of colored SiO2/SiNx:H DARC cells is comparable to that of standard SiNx:H light blue cells, which shows the potential of colored cells in industrial applications.

  6. Hydrogen passivation of polycrystalline Si thin film solar cells

    International Nuclear Information System (INIS)

    Gorka, Benjamin

    2010-01-01

    Hydrogen passivation is a key process step in the fabrication of polycrystalline Si (poly-Si) thin film solar cells. In this work a parallel plate rf plasma setup was used for the hydrogen passivation treatment. The main topics that have been investigated are (i) the role of plasma parameters (like hydrogen pressure, electrode gap and plasma power), (ii) the dynamics of the hydrogen treatment and (iii) passivation of poly-Si with different material properties. Passivation was characterized by measuring the open-circuit voltage V OC of poly-Si reference samples. Optimum passivation conditions were found by measurements of the breakdown voltage V brk of the plasma for different pressures p and electrode gaps d. For each pressure, the best passivation was achieved at a gap d that corresponded to the minimum in V brk . Plasma simulations were carried out, which indicate that best V OC corresponds to a minimum in ion energy. V OC was not improved by a larger H flux. Investigations of the passivation dynamic showed that a plasma treatment in the lower temperature range (≤400 C) is slow and takes several hours for the V OC to saturate. Fast passivation can be successfully achieved at elevated temperatures around 500 C to 600 C with a plateau time of 10 min. It was found that prolonged hydrogenation leads to a loss in V OC , which is less pronounced within the observed optimum temperature range (500 C-600 C). Electron beam evaporation has been investigated as an alternative method to fabricate poly-Si absorbers. The material properties have been tuned by alteration of substrate temperature T dep =200-700 C and were characterized by Raman, ESR and V OC measurements. Largest grains were obtained after solid phase crystallization (SPC) of a-Si, deposited in the temperature range of 300 C. The defect concentration of Si dangling bonds was lowered by passivation by about one order of magnitude. The lowest dangling bond concentration of 2.5.10 16 cm -3 after passivation was

  7. Symmetric aluminum-wire arrays generate high-quality Z pinches at large array radii

    International Nuclear Information System (INIS)

    Sanford, T.W.; Mock, R.C.; Spielman, R.B.; Peterson, D.L.; Mosher, D.; Roderick, N.F.

    1998-01-01

    A Saturn-accelerator study of annular, aluminum-wire array, Z-pinch implosions, in the calculated high-wire-number plasma-shell regime [Phys. Rev. Lett. 77, 5063 (1996)], shows that the radiated x-ray pulse width increases from about 4 nsec to about 7 nsec, when the radius of the array is increased from 8.75 to 20 mm at a fixed array mass of 0.6 mg. Eulerian radiation- magnetohydrodynamic code (E-RMHC) simulations in the r-z plane suggest that this pulse-width increase with radius is due to the faster growth of the shell thickness (that arises from a two-stage development in the magnetic Rayleigh - Taylor instability) relative to the increase in the shell implosion velocity. Over the array radii explored, the measured peak total x-ray power of ∼40 TW and energy of ∼325 kJ show little change outside of a ±15% shot-to-shot fluctuation and are consistent with the E-RMHC simulations. Similarly, the measured peak K-shell (lines plus continuum) power of ∼8 TW and energy of ∼70 kJ show little change with radius. The minimal change in K-shell yield is in agreement with simple K-shell radiation scaling models that assume a fixed radial compression for all initial array radii. These results suggest that the improved uniformity provided by the large number of wires in the initial array reduces the disruptive effects of the Rayleigh - Taylor instability observed in small-wire-number imploding loads. copyright 1998 American Institute of Physics

  8. Symmetric aluminum-wire arrays generate high-quality Z pinches at large array radii

    Energy Technology Data Exchange (ETDEWEB)

    Sanford, T.W.; Mock, R.C.; Spielman, R.B. [Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185 (United States); Peterson, D.L. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545-0010 (United States); Mosher, D. [Naval Research Laboratory, Pulsed Power Physics Branch, Washington, DC 20375 (United States); Roderick, N.F. [University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    1998-10-01

    A Saturn-accelerator study of annular, aluminum-wire array, Z-pinch implosions, in the calculated high-wire-number plasma-shell regime [Phys. Rev. Lett. {bold 77}, 5063 (1996)], shows that the radiated x-ray pulse width increases from about 4 nsec to about 7 nsec, when the radius of the array is increased from 8.75 to 20 mm at a fixed array mass of 0.6 mg. Eulerian radiation- magnetohydrodynamic code (E-RMHC) simulations in the r-z plane suggest that this pulse-width increase with radius is due to the faster growth of the shell thickness (that arises from a two-stage development in the magnetic Rayleigh{endash}Taylor instability) relative to the increase in the shell implosion velocity. Over the array radii explored, the measured peak total x-ray power of {approximately}40 TW and energy of {approximately}325 kJ show little change outside of a {plus_minus}15{percent} shot-to-shot fluctuation and are consistent with the E-RMHC simulations. Similarly, the measured peak {ital K}-shell (lines plus continuum) power of {approximately}8 TW and energy of {approximately}70 kJ show little change with radius. The minimal change in {ital K}-shell yield is in agreement with simple {ital K}-shell radiation scaling models that assume a fixed radial compression for all initial array radii. These results suggest that the improved uniformity provided by the large number of wires in the initial array reduces the disruptive effects of the Rayleigh{endash}Taylor instability observed in small-wire-number imploding loads. {copyright} {ital 1998 American Institute of Physics.}

  9. Symmetric aluminum-wire arrays generate high-quality Z pinches at large array radii

    Science.gov (United States)

    Sanford, T. W. L.; Mock, R. C.; Spielman, R. B.; Peterson, D. L.; Mosher, D.; Roderick, N. F.

    1998-10-01

    A Saturn-accelerator study of annular, aluminum-wire array, Z-pinch implosions, in the calculated high-wire-number plasma-shell regime [Phys. Rev. Lett. 77, 5063 (1996)], shows that the radiated x-ray pulse width increases from about 4 nsec to about 7 nsec, when the radius of the array is increased from 8.75 to 20 mm at a fixed array mass of 0.6 mg. Eulerian radiation- magnetohydrodynamic code (E-RMHC) simulations in the r-z plane suggest that this pulse-width increase with radius is due to the faster growth of the shell thickness (that arises from a two-stage development in the magnetic Rayleigh-Taylor instability) relative to the increase in the shell implosion velocity. Over the array radii explored, the measured peak total x-ray power of ˜40 TW and energy of ˜325 kJ show little change outside of a ±15% shot-to-shot fluctuation and are consistent with the E-RMHC simulations. Similarly, the measured peak K-shell (lines plus continuum) power of ˜8 TW and energy of ˜70 kJ show little change with radius. The minimal change in K-shell yield is in agreement with simple K-shell radiation scaling models that assume a fixed radial compression for all initial array radii. These results suggest that the improved uniformity provided by the large number of wires in the initial array reduces the disruptive effects of the Rayleigh-Taylor instability observed in small-wire-number imploding loads.

  10. Current scaling of radiated power for 40-mm diameter single wire arrays on Z

    Science.gov (United States)

    Nash, T. J.; Cuneo, M. E.; Spielman, R. B.; Chandler, G. A.; Leeper, R. J.; Seaman, J. F.; McGurn, J.; Lazier, S.; Torres, J.; Jobe, D.; Gilliland, T.; Nielsen, D.; Hawn, R.; Bailey, J. E.; Lake, P.; Carlson, A. L.; Seamen, H.; Moore, T.; Smelser, R.; Pyle, J.; Wagoner, T. C.; LePell, P. D.; Deeney, C.; Douglas, M. R.; McDaniel, D.; Struve, K.; Mazarakis, M.; Stygar, W. A.

    2004-11-01

    In order to estimate the radiated power that can be expected from the next-generation Z-pinch driver such as ZR at 28 MA, current-scaling experiments have been conducted on the 20 MA driver Z. We report on the current scaling of single 40 mm diameter tungsten 240 wire arrays with a fixed 110 ns implosion time. The wire diameter is decreased in proportion to the load current. Reducing the charge voltage on the Marx banks reduces the load current. On one shot, firing only three of the four levels of the Z machine further reduced the load current. The radiated energy scaled as the current squared as expected but the radiated power scaled as the current to the 3.52±0.42 power due to increased x-ray pulse width at lower current. As the current is reduced, the rise time of the x-ray pulse increases and at the lowest current value of 10.4 MA, a shoulder appears on the leading edge of the x-ray pulse. In order to determine the nature of the plasma producing the leading edge of the x-ray pulse at low currents further shots were taken with an on-axis aperture to view on-axis precursor plasma. This aperture appeared to perturb the pinch in a favorable manner such that with the aperture in place there was no leading edge to the x-ray pulses at lower currents and the radiated power scaled as the current squared ±0.75. For a full-current shot we will present x-ray images that show precursor plasma emitting on-axis 77 ns before the main x-ray burst.

  11. Fast Pulling of n-Type Si Ingots for Enhanced Si Solar Cell Production

    Science.gov (United States)

    Kim, Kwanghun; Park, Sanghyun; Park, Jaechang; Pang, Ilsun; Ryu, Sangwoo; Oh, Jihun

    2018-03-01

    Reducing the manufacturing costs of silicon substrates is an important issue in the silicon-based solar cell industry. In this study, we developed a high-throughput ingot growth method by accelerating the pulling speed in the Czochralski process. By controlling the heat flow of the ingot growth chamber and at the solid-liquid interfaces, the pulling speed of an ingot could be increased by 15% compared to the conventional method, while retaining high quality. The wafer obtained at a high pulling speed showed an enhanced minority carrier lifetime compared with conventional wafers, due to the vacancy passivation effect, and also demonstrated comparable bulk resistivity and impurities. The results in this work are expected to open a new way to enhance the productivity of Si wafers used for Si solar cells, and therefore, to reduce the overall manufacturing cost.

  12. A Generalized Theory Explains the Anomalous Suns–Voc Response of Si Heterojunction Solar Cells

    KAUST Repository

    Chavali, Raghu Vamsi Krishna; Li, Jian V.; Battaglia, Corsin; De Wolf, Stefaan; Gray, Jeffery Lynn; Alam, Muhammad Ashraful

    2016-01-01

    Suns–Voc measurements exclude parasitic series resistance effects and are, therefore, frequently used to study the intrinsic potential of a given photovoltaic technology. However, when applied to a-Si/c-Si heterojunction (SHJ) solar cells, the Suns

  13. HIT Solar Cells with N-Type Low-Cost Metallurgical Si

    Directory of Open Access Journals (Sweden)

    Xing Yang

    2018-01-01

    Full Text Available A conversion efficiency of 20.23% of heterojunction with intrinsic thin layer (HIT solar cell on 156 mm × 156 mm metallurgical Si wafer has been obtained. Applying AFORS-HET software simulation, HIT solar cell with metallurgical Si was investigated with regard to impurity concentration, compensation level, and their impacts on cell performance. It is known that a small amount of impurity in metallurgical Si materials is not harmful to solar cell properties.

  14. Characterization of μc-Si:H/a-Si:H tandem solar cell structures by spectroscopic ellipsometry

    International Nuclear Information System (INIS)

    Murata, Daisuke; Yuguchi, Tetsuya; Fujiwara, Hiroyuki

    2014-01-01

    In order to perform the structural characterization of Si thin-film solar cells having submicron-size rough textured surfaces, we have developed an optical model that can be utilized for the spectroscopic ellipsometry (SE) analysis of a multilayer solar cell structure consisting of hydrogenated amorphous silicon (a-Si:H) and microcrystalline silicon (μc-Si:H) layers fabricated on textured SnO 2 :F substrates. To represent the structural non-uniformity in the textured structure, the optical response has been calculated from two regions with different thicknesses of the Si layers. Moreover, in the optical model, the interface layers are modeled by multilayer structures assuming two-phase composites and the volume fractions of the phases in the layers are controlled by the structural curvature factor. The polarized reflection from the μc-Si:H layer that shows extensive surface roughening during the growth has also been modeled. In this study, a state-of-the-art solar cell structure with the textured μc-Si:H (2000 nm)/ZnO (100 nm)/a-Si:H (200 nm)/SnO 2 :F/glass substrate structure has been characterized. The μc-Si:H/a-Si:H textured structure deduced from our SE analysis shows remarkable agreement with that observed by transmission electron microscopy. From the above results, we have demonstrated the high-precision characterization of highly-textured μc-Si:H/a-Si:H solar cell structures. - Highlights: • Characterization of textured μc-Si:H/a-Si:H solar cell structures by ellipsometry • A new optical model using surface area and multilayer models • High precision characterization of submicron-range rough interface structures

  15. Low cost sol–gel derived SiC–SiO{sub 2} nanocomposite as anti reflection layer for enhanced performance of crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Jannat, Azmira [School of Semiconductor and Chemical Engineering, Solar Energy Research Center, Chonbuk National University, Jeonju, Jeonbuk 54896 (Korea, Republic of); Solar Energy Engineering, Chonbuk National University, Jeonju, Jeonbuk 54896 (Korea, Republic of); Lee, Woojin [School of Semiconductor and Chemical Engineering, Solar Energy Research Center, Chonbuk National University, Jeonju, Jeonbuk 54896 (Korea, Republic of); Akhtar, M. Shaheer, E-mail: shaheerakhtar@jbnu.ac.kr [School of Semiconductor and Chemical Engineering, Solar Energy Research Center, Chonbuk National University, Jeonju, Jeonbuk 54896 (Korea, Republic of); New & Renewable Energy Materials Development Center (NewREC), Chonbuk National University, Jeonbuk (Korea, Republic of); Li, Zhen Yu [School of Semiconductor and Chemical Engineering, Solar Energy Research Center, Chonbuk National University, Jeonju, Jeonbuk 54896 (Korea, Republic of); Yang, O.-Bong, E-mail: obyang@jbnu.ac.kr [School of Semiconductor and Chemical Engineering, Solar Energy Research Center, Chonbuk National University, Jeonju, Jeonbuk 54896 (Korea, Republic of); New & Renewable Energy Materials Development Center (NewREC), Chonbuk National University, Jeonbuk (Korea, Republic of)

    2016-04-30

    Graphical abstract: - Highlights: • Sol–gel derived SiC–SiO{sub 2} nanocomposite was prepared. • It effectively coated as AR layer on p-type Si-wafer. • SiC–SiO{sub 2} layer on Si solar cells exhibited relatively low reflectance of 7.08%. • Fabricated Si solar cell attained highly comparable performance of 16.99% to commercial device. - Abstract: This paper describes the preparation, characterizations and the antireflection (AR) coating application in crystalline silicon solar cells of sol–gel derived SiC–SiO{sub 2} nanocomposite. The prepared SiC–SiO{sub 2} nanocomposite was effectively applied as AR layer on p-type Si-wafer via two step processes, where the sol–gel of precursor solution was first coated on p-type Si-wafer using spin coating at 2000 rpm and then subjected to annealing at 450 °C for 1 h. The crystalline, and structural observations revealed the existence of SiC and SiO{sub 2} phases, which noticeably confirmed the formation of SiC–SiO{sub 2} nanocomposite. The SiC–SiO{sub 2} layer on Si solar cells was found to be an excellent AR coating, exhibiting the low reflectance of 7.08% at wavelengths ranging from 400 to 1000 nm. The fabricated crystalline Si solar cell with SiC–SiO{sub 2} nanocomposite AR coating showed comparable power conversion efficiency of 16.99% to the conventional Si{sub x}N{sub x} AR coated Si solar cell. New and effective sol–gel derived SiC–SiO{sub 2} AR layer would offer a promising technique to produce high performance Si solar cells with low-cost.

  16. Influence of air exposure duration and a-Si capping layer thickness on the performance of p-BaSi2/n-Si heterojunction solar cells

    Directory of Open Access Journals (Sweden)

    Ryota Takabe

    2016-08-01

    Full Text Available Fabrication of p-BaSi2(20nm/n-Si heterojunction solar cells was performed with different a-Si capping layer thicknesses (da-Si and varying air exposure durations (tair prior to the formation of a 70-nm-thick indium-tin-oxide electrode. The conversion efficiencies (η reached approximately 4.7% regardless of tair (varying from 12–150 h for solar cells with da-Si = 5 nm. In contrast, η increased from 5.3 to 6.6% with increasing tair for those with da-Si = 2 nm, in contrast to our prediction. For this sample, the reverse saturation current density (J0 and diode ideality factor decreased with tair, resulting in the enhancement of η. The effects of the variation of da-Si (0.7, 2, 3, and 5 nm upon the solar cell performance were examined while keeping tair = 150 h. The η reached a maximum of 9.0% when da-Si was 3 nm, wherein the open-circuit voltage and fill factor also reached a maximum. The series resistance, shunt resistance, and J0 exhibited a tendency to decrease as da-Si increased. These results demonstrate that a moderate oxidation of BaSi2 is a very effective means to enhance the η of BaSi2 solar cells.

  17. Experimental investigations of ablation stream interaction dynamics in tungsten wire arrays: Interpenetration, magnetic field advection, and ion deflection

    Energy Technology Data Exchange (ETDEWEB)

    Swadling, G. F.; Lebedev, S. V.; Hall, G. N.; Suzuki-Vidal, F.; Burdiak, G. C.; Pickworth, L.; De Grouchy, P.; Skidmore, J.; Khoory, E.; Suttle, L.; Bennett, M.; Hare, J. D.; Clayson, T.; Bland, S. N.; Smith, R. A.; Stuart, N. H.; Patankar, S.; Robinson, T. S. [Blackett Laboratory, Imperial College, London SW7 2BW (United Kingdom); Harvey-Thompson, A. J. [Sandia National Laboratories, PO Box 5800, Albuquerque, New Mexico 87185-1193 (United States); Rozmus, W. [Department of Physics, University of Alberta, Edmonton, Alberta T6G 2J1 (Canada); and others

    2016-05-15

    Experiments have been carried out to investigate the collisional dynamics of ablation streams produced by cylindrical wire array z-pinches. A combination of laser interferometric imaging, Thomson scattering, and Faraday rotation imaging has been used to make a range of measurements of the temporal evolution of various plasma and flow parameters. This paper presents a summary of previously published data, drawing together a range of different measurements in order to give an overview of the key results. The paper focuses mainly on the results of experiments with tungsten wire arrays. Early interferometric imaging measurements are reviewed, then more recent Thomson scattering measurements are discussed; these measurements provided the first direct evidence of ablation stream interpenetration in a wire array experiment. Combining the data from these experiments gives a view of the temporal evolution of the tungsten stream collisional dynamics. In the final part of the paper, we present new experimental measurements made using an imaging Faraday rotation diagnostic. These experiments investigated the structure of magnetic fields near the array axis directly; the presence of a magnetic field has previously been inferred based on Thomson scattering measurements of ion deflection near the array axis. Although the Thomson and Faraday measurements are not in full quantitative agreement, the Faraday data do qualitatively supports the conjecture that the observed deflections are induced by a static toroidal magnetic field, which has been advected to the array axis by the ablation streams. It is likely that detailed modeling will be needed in order to fully understand the dynamics observed in the experiment.

  18. Experimental study of implosion dynamics of multi-material nested wire-arrays on S-300 pulsed power generator

    International Nuclear Information System (INIS)

    Chernenko, A.S.; Smirnov, V.P.; Kingsep, A.S.

    2004-01-01

    On 'S-300' generator (700 kV, 4 MA, 70 ns) at the Kurchatov Institute, the experimental studies with multi-material wire array units are carried on aimed at creating the powerful X-ray source. The development of new diagnostic methods would definitely contribute to attain new data, which could help in explanation of X-ray emission mechanism of imploding multi-wire arrays that has not well understood yet. The experimental study of soft X-ray emission of different wire sets, different in both mass and composition, has been carried on in the same geometry. One of the purposes of these experiments was investigation of the wire array chemical composition influence on the implosion dynamics and stability. Study of the nested (cascade) liner dynamics shows that the minimal liner radius at the stagnation moment of time (2r ∼ 3 - 3.5 mm) recorded in the visible range by the streak camera fairly coincides with the outer diameter of the inner tungsten array of 4 mm. The same size is shown by the integral pinhole pictures obtained in the SXR range, without a filter. Unlike all these pictures, images obtained in the range E > 2 keV demonstrate the resulting state of Z-pinch in the form of a thin (∼ 0.2 mm) twisting filament. In addition, small space scales are typical of the liner pictures taken in the range of He- and H-like aluminum ions by means of a spectrograph. Thus, one may conclude that Al plasma of the outer liner passes into the inner space of the almost immovable W array where becomes trapped and compressed by the magnetic field. (author)

  19. Demonstration of radiation pulse shaping with nested-tungsten-wire-array pinches for high-yield inertial confinement fusion.

    Science.gov (United States)

    Cuneo, M E; Vesey, R A; Sinars, D B; Chittenden, J P; Waisman, E M; Lemke, R W; Lebedev, S V; Bliss, D E; Stygar, W A; Porter, J L; Schroen, D G; Mazarakis, M G; Chandler, G A; Mehlhorn, T A

    2005-10-28

    Nested wire-array pinches are shown to generate soft x-ray radiation pulse shapes required for three-shock isentropic compression and hot-spot ignition of high-yield inertial confinement fusion capsules. We demonstrate a reproducible and tunable foot pulse (first shock) produced by interaction of the outer and inner arrays. A first-step pulse (second shock) is produced by inner array collision with a central CH2 foam target. Stagnation of the inner array at the axis produces the third shock. Capsules optimized for several of these shapes produce 290-900 MJ fusion yields in 1D simulations.

  20. Neutron and soft X-ray emission from wire array Z-pinch imploding onto deuterated fiber

    International Nuclear Information System (INIS)

    Klir, D.; Kravarik, J.; Kubes, P.

    2005-01-01

    The implosion of a wire array Z-pinch onto a deuterated fiber was studied. The peak power of soft X-rays exceeded 200 GW and the total emitted energy was 2-8 kJ. The radiation was close to the radiation of the blackbody with the temperature of 40 eV. The neutron yield from the D-D reaction reached 2x10 8 per shot. The mean energy of neutrons determined in the axial direction was shifted from 2.45 MeV towards higher energies [ru

  1. Simulation of light-induced degradation of μc-Si in a-Si/μc-Si tandem solar cells by the diode equivalent circuit

    Science.gov (United States)

    Weicht, J. A.; Hamelmann, F. U.; Behrens, G.

    2016-02-01

    Silicon-based thin film tandem solar cells consist of one amorphous (a-Si) and one microcrystalline (μc-Si) silicon solar cell. The Staebler - Wronski effect describes the light- induced degradation and temperature-dependent healing of defects of silicon-based solar thin film cells. The solar cell degradation depends strongly on operation temperature. Until now, only the light-induced degradation (LID) of the amorphous layer was examined in a-Si/μc-Si solar cells. The LID is also observed in pc-Si single function solar cells. In our work we show the influence of the light-induced degradation of the μc-Si layer on the diode equivalent circuit. The current-voltage-curves (I-V-curves) for the initial state of a-Si/pc-Si modules are measured. Afterwards the cells are degraded under controlled conditions at constant temperature and constant irradiation. At fixed times the modules are measured at standard test conditions (STC) (AM1.5, 25°C cell temperature, 1000 W/m2) for controlling the status of LID. After the degradation the modules are annealed at dark conditions for several hours at 120°C. After the annealing the dangling bonds in the amorphous layer are healed, while the degradation of the pc-Si is still present, because the healing of defects in pc-Si solar cells needs longer time or higher temperatures. The solar cells are measured again at STC. With this laboratory measured I-V-curves we are able to separate the values of the diode model: series Rs and parallel resistance Rp, saturation current Is and diode factor n.

  2. Mechanism on radiation degradation of Si space solar cells

    International Nuclear Information System (INIS)

    Yamaguchi, Masafumi; Taylor, S.J.; Hisamatsu, Tadashi; Matsuda, Sumio

    1998-01-01

    Radiation testing of Si n + -p-p + structure space solar cells has revealed an anomalous increase in short-circuit current Isc, followed by an abrupt decrease and cell failure, induced by high fluence electron and proton irradiations. A model to explain these phenomena by expressing the change in carrier concentration p of the base region is proposed in addition to the well-known model where Isc is decreased by minority-carrier lifetime reduction with irradiation. Change in carrier concentration causes broadening the depletion layer to contribute increase in the generated photocurrent and increase in recombination-generation current in the depletion layer, and increase in the resistivity of the base layer to result in the abrupt decrease of Isc and failure of the solar cell. Type conversion from p-type to n-type in base layer has been confirmed by EBIC (electron-beam induced current) and spectral response measurements. Moreover, origins of radiation-induced defects in heavily irradiated Si and generation of deep donor defects have also been examined by using DLTS (deep level transient spectroscopy) analysis. (author)

  3. Hydrogen passivation of polycrystalline Si thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gorka, Benjamin

    2010-12-15

    Hydrogen passivation is a key process step in the fabrication of polycrystalline Si (poly-Si) thin film solar cells. In this work a parallel plate rf plasma setup was used for the hydrogen passivation treatment. The main topics that have been investigated are (i) the role of plasma parameters (like hydrogen pressure, electrode gap and plasma power), (ii) the dynamics of the hydrogen treatment and (iii) passivation of poly-Si with different material properties. Passivation was characterized by measuring the open-circuit voltage V{sub OC} of poly-Si reference samples. Optimum passivation conditions were found by measurements of the breakdown voltage V{sub brk} of the plasma for different pressures p and electrode gaps d. For each pressure, the best passivation was achieved at a gap d that corresponded to the minimum in V{sub brk}. Plasma simulations were carried out, which indicate that best V{sub OC} corresponds to a minimum in ion energy. V{sub OC} was not improved by a larger H flux. Investigations of the passivation dynamic showed that a plasma treatment in the lower temperature range ({<=}400 C) is slow and takes several hours for the V{sub OC} to saturate. Fast passivation can be successfully achieved at elevated temperatures around 500 C to 600 C with a plateau time of 10 min. It was found that prolonged hydrogenation leads to a loss in V{sub OC}, which is less pronounced within the observed optimum temperature range (500 C-600 C). Electron beam evaporation has been investigated as an alternative method to fabricate poly-Si absorbers. The material properties have been tuned by alteration of substrate temperature T{sub dep}=200-700 C and were characterized by Raman, ESR and V{sub OC} measurements. Largest grains were obtained after solid phase crystallization (SPC) of a-Si, deposited in the temperature range of 300 C. The defect concentration of Si dangling bonds was lowered by passivation by about one order of magnitude. The lowest dangling bond concentration

  4. Ion implantation into amorphous Si layers to form carrier-selective contacts for Si solar cells

    International Nuclear Information System (INIS)

    Feldmann, Frank; Mueller, Ralph; Reichel, Christian; Hermle, Martin

    2014-01-01

    This paper reports our findings on the boron and phosphorus doping of very thin amorphous silicon layers by low energy ion implantation. These doped layers are implemented into a so-called tunnel oxide passivated contact structure for Si solar cells. They act as carrier-selective contacts and, thereby, lead to a significant reduction of the cell's recombination current. In this paper we address the influence of ion energy and ion dose in conjunction with the obligatory high-temperature anneal needed for the realization of the passivation quality of the carrier-selective contacts. The good results on the phosphorus-doped (implied V oc = 725 mV) and boron-doped passivated contacts (iV oc = 694 mV) open a promising route to a simplified interdigitated back contact (IBC) solar cell featuring passivated contacts. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Simulating characteristics of Si/Ge tandem monolithic solar cell with Si1-xGex buffer layer

    Directory of Open Access Journals (Sweden)

    Gnilenko A. B.

    2015-12-01

    Full Text Available In spite of many efforts to propose new semiconductor materials and sophisticated constructions of solar cells, crystalline silicone remains the main photovoltaic material widely used up to now. There are various methods to enhance the efficiency of silicone solar cells. One of them is to combine silicone with an additional semiconductor material with the different bandgap to form a tandem construction. For example, the germanium sub-cell used as the bottom cascade for the silicone sub-cell in the tandem monolithic solar cell makes it possible to utilize the "red" sub-band of solar spectra increasing overall solar cell efficiency. The problem of the 4.2% mismatch in lattice constant between Si and Ge can be resolved in such a case by the use of SiGe buffer layer. In the paper the results of the computer simulation for Si/Ge tandem monolithic solar cell with Si1-xGex buffer layer are presented. In the solar cell under consideration, the step graded Si1-xGex buffer layer is located between the top silicone and the bottom germanium cascades to reduce the threading dislocation density in mismatched materials. The cascades are commutated by the use of the germanium tunnel diode between the bottom sub-cell and the buffer layer. For the solar cell modeling, the physically-based device simulator ATLAS of Silvaco TCAD software is employed to predict the electrical behavior of the semiconductor structure and to provide a deep insight into the internal physical processes. The voltage-current characteristic, photovoltaic parameters and the distribution of basic physical values are obtained for the investigated tandem solar cell. The influence of layer thicknesses on the photovoltaic parameters is studied. The calculated efficiency of the tandem solar cell reaches 13% which is a quarter more than the efficiency of a simple silicone solar cell with the same constructive parameters and under the same illumination conditions.

  6. Wire number dependence of the implosion dynamics, stagnation, and radiation output of tungsten wire arrays at Z driver

    Energy Technology Data Exchange (ETDEWEB)

    Mazarakis, Michael G.; Stygar, William A.; Sinars, Daniel B.; Cuneo, Michael E.; Nash, Thomas J.; Chandler, Gordon A.; Keith Matzen, M.; Porter, John L.; Struve, Kenneth W.; McDaniel, Dillon H. [Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185 (United States); Deeney, Christopher E. [National Nuclear Security Administration, Washington, D.C. 20585 (United States); Douglas, Melissa R. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Chittenden, Jerry [Imperial College, London, SW and 2BW (United Kingdom)

    2011-11-15

    We report results of the experimental campaign, which studied the initiation, implosion dynamics, and radiation yield of tungsten wire arrays as a function of the wire number. The wire array dimensions and mass were those of interest for the Z-pinch driven Inertial Confinement Fusion (ICF) program. An optimization study of the x-ray emitted peak power, rise time, and full width at half maximum was effectuated by varying the wire number while keeping the total array mass constant and equal to {approx}5.8 mg. The driver utilized was the {approx}20-MA Z accelerator before refurbishment in its usual short pulse mode of 100 ns. We studied single arrays of 20-mm diameter and 1-cm height. The smaller wire number studied was 30 and the largest 600. It appears that 600 is the highest achievable wire number with present day's technology. Radial and axial diagnostics were utilized including crystal monochromatic x-ray backlighter. An optimum wire number of {approx}375 was observed which was very close to the routinely utilized 300 for the ICF program in Sandia.

  7. Wire number dependence of the implosion dynamics, stagnation, and radiation output of tungsten wire arrays at Z driver

    International Nuclear Information System (INIS)

    Mazarakis, Michael G.; Stygar, William A.; Sinars, Daniel B.; Cuneo, Michael E.; Nash, Thomas J.; Chandler, Gordon A.; Keith Matzen, M.; Porter, John L.; Struve, Kenneth W.; McDaniel, Dillon H.; Deeney, Christopher E.; Douglas, Melissa R.; Chittenden, Jerry

    2011-01-01

    We report results of the experimental campaign, which studied the initiation, implosion dynamics, and radiation yield of tungsten wire arrays as a function of the wire number. The wire array dimensions and mass were those of interest for the Z-pinch driven Inertial Confinement Fusion (ICF) program. An optimization study of the x-ray emitted peak power, rise time, and full width at half maximum was effectuated by varying the wire number while keeping the total array mass constant and equal to ∼5.8 mg. The driver utilized was the ∼20-MA Z accelerator before refurbishment in its usual short pulse mode of 100 ns. We studied single arrays of 20-mm diameter and 1-cm height. The smaller wire number studied was 30 and the largest 600. It appears that 600 is the highest achievable wire number with present day's technology. Radial and axial diagnostics were utilized including crystal monochromatic x-ray backlighter. An optimum wire number of ∼375 was observed which was very close to the routinely utilized 300 for the ICF program in Sandia.

  8. Analysis of the High Conversion Efficiencies β-FeSi2 and BaSi2 n-i-p Thin Film Solar Cells

    International Nuclear Information System (INIS)

    Huang, J.Sh.; Lee, K.W.; Tseng, Y.H.

    2014-01-01

    Both β-FeSi 2 and BaSi 2 are silicides and have large absorption coefficients; thus they are very promising Si-based new materials for solar cell applications. In this paper, the dc I-V characteristics of n-Si/i-βFeSi 2 /p-Si and n-Si/i-BaSi 2 /p-Si thin film solar cells are investigated by solving the charge transport equations with optical generations. The diffusion current densities of free electron and hole are calculated first. Then the drift current density in the depletion regions is obtained. The total current density is the sum of diffusion and drift current densities. The conversion efficiencies are obtained from the calculated I-V curves. The optimum conversion efficiency of n-Si/i-βFeSi 2 /p-Si thin film solar cell is 27.8% and that of n-Si/i-BaSi 2 /p-Si thin film solar cell is 30.4%, both are larger than that of Si n-i-p solar cell (η is 20.6%). These results are consistent with their absorption spectrum. The calculated conversion efficiency of Si n-i-p solar cell is consistent with the reported researches. Therefore, these calculation results are valid in this work.

  9. Analysis of the High Conversion Efficiencies β-FeSi2 and BaSi2 n-i-p Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Jung-Sheng Huang

    2014-01-01

    Full Text Available Both β-FeSi2 and BaSi2 are silicides and have large absorption coefficients; thus they are very promising Si-based new materials for solar cell applications. In this paper, the dc I-V characteristics of n-Si/i-βFeSi2/p-Si and n-Si/i-BaSi2/p-Si thin film solar cells are investigated by solving the charge transport equations with optical generations. The diffusion current densities of free electron and hole are calculated first. Then the drift current density in the depletion regions is obtained. The total current density is the sum of diffusion and drift current densities. The conversion efficiencies are obtained from the calculated I-V curves. The optimum conversion efficiency of n-Si/i-βFeSi2/p-Si thin film solar cell is 27.8% and that of n-Si/i-BaSi2/p-Si thin film solar cell is 30.4%, both are larger than that of Si n-i-p solar cell (η is 20.6%. These results are consistent with their absorption spectrum. The calculated conversion efficiency of Si n-i-p solar cell is consistent with the reported researches. Therefore, these calculation results are valid in this work.

  10. Three-dimensional imaging for precise structural control of Si quantum dot networks for all-Si solar cells

    Science.gov (United States)

    Kourkoutis, Lena F.; Hao, Xiaojing; Huang, Shujuan; Puthen-Veettil, Binesh; Conibeer, Gavin; Green, Martin A.; Perez-Wurfl, Ivan

    2013-07-01

    All-Si tandem solar cells based on Si quantum dots (QDs) are a promising approach to future high-performance, thin film solar cells using abundant, stable and non-toxic materials. An important prerequisite to achieve a high conversion efficiency in such cells is the ability to control the geometry of the Si QD network. This includes the ability to control both, the size and arrangement of Si QDs embedded in a higher bandgap matrix. Using plasmon tomography we show the size, shape and density of Si QDs, that form in Si rich oxide (SRO)/SiO2 multilayers upon annealing, can be controlled by varying the SRO stoichiometry. Smaller, more spherical QDs of higher densities are obtained at lower Si concentrations. In richer SRO layers ellipsoidal QDs tend to form. Using electronic structure calculations within the effective mass approximation we show that ellipsoidal QDs give rise to reduced inter-QD coupling in the layer. Efficient carrier transport via mini-bands is in this case more likely across the multilayers provided the SiO2 spacer layer is thin enough to allow coupling in the vertical direction.All-Si tandem solar cells based on Si quantum dots (QDs) are a promising approach to future high-performance, thin film solar cells using abundant, stable and non-toxic materials. An important prerequisite to achieve a high conversion efficiency in such cells is the ability to control the geometry of the Si QD network. This includes the ability to control both, the size and arrangement of Si QDs embedded in a higher bandgap matrix. Using plasmon tomography we show the size, shape and density of Si QDs, that form in Si rich oxide (SRO)/SiO2 multilayers upon annealing, can be controlled by varying the SRO stoichiometry. Smaller, more spherical QDs of higher densities are obtained at lower Si concentrations. In richer SRO layers ellipsoidal QDs tend to form. Using electronic structure calculations within the effective mass approximation we show that ellipsoidal QDs give rise to

  11. Efficiency Improvement of HIT Solar Cells on p-Type Si Wafers.

    Science.gov (United States)

    Wei, Chun-You; Lin, Chu-Hsuan; Hsiao, Hao-Tse; Yang, Po-Chuan; Wang, Chih-Ming; Pan, Yen-Chih

    2013-11-22

    Single crystal silicon solar cells are still predominant in the market due to the abundance of silicon on earth and their acceptable efficiency. Different solar-cell structures of single crystalline Si have been investigated to boost efficiency; the heterojunction with intrinsic thin layer (HIT) structure is currently the leading technology. The record efficiency values of state-of-the art HIT solar cells have always been based on n-type single-crystalline Si wafers. Improving the efficiency of cells based on p-type single-crystalline Si wafers could provide broader options for the development of HIT solar cells. In this study, we varied the thickness of intrinsic hydrogenated amorphous Si layer to improve the efficiency of HIT solar cells on p-type Si wafers.

  12. Experiments with a Gas-Puff-On-Wire-Array Load on the GIT-12 Generator for Al K-shell Radiation Production at Microsecond Implosion Times

    International Nuclear Information System (INIS)

    Shishlov, Alexander V.; Baksht, Rina B.; Chaikovsky, Stanislav A.; Fedunin, Anatoly V.; Fursov, Fedor I.; Kovalchuk, Boris M.; Kokshenev, Vladimir A.; Kurmaev, Nikolai E.; Labetsky, Aleksey Yu.; Oreshkin, Vladimir I.; Rousskikh, Alexander G.; Lassalle, Francis; Bayol, Frederic

    2006-01-01

    Results of the experiments carried out on the GIT-12 generator at the current level of 3.5 MA and the Z-pinch implosion times from 700 ns to 1.1 μs are presented. A multi-shell (triple-shell) load configuration with the outer gas puffs (neon) and the inner wire array (aluminum) was used in the experiments. In the course of the research, implosion dynamics of the triple-shell z-pinch was studied, and the radiation yield in the spectral range of neon and aluminum K-lines have been measured. Optimization of the inner wire array parameters aimed at obtaining the maximum aluminum K-shell radiation yield has been carried out. As a result of optimization of the gas-puff-on-wire-array Z-pinch load, the aluminum K-shell radiation yield (hv> 1.55 keV) up to 4 kJ/cm in the radiation pulse with FWHM less than 30 ns has been obtained. Comparison of the experimental results with the results of preliminary 1D RMHD simulations allows a conclusion that at least 2/3 of the generator current is switched from a gas puff to an aluminum wire array. The radiation yield in the spectral range of neon K-lines (0.92-1.55 keV) increases considerably in the shots with the inner wire array in comparison with the shots carried out with the outer gas puffs only. The radiation yield in the spectral range above 1 keV registered in the experiments reached 10 kJ/cm. The presence of a high portion of the neon plasma inside an inner wire array can limit the radiation yield in the spectral range above 1.55 keV

  13. IBC c-Si solar cells based on ion-implanted poly-silicon passivating contacts

    NARCIS (Netherlands)

    Yang, G.; Ingenito, A.; Isabella, O.; Zeman, M.

    2016-01-01

    Ion-implanted poly-crystalline silicon (poly-Si), in combination with a tunnel oxide layer, is investigated as a carrier-selective passivating contact in c-Si solar cells based on an interdigitated back contact (IBC) architecture. The optimized poly-Si passivating contacts enable low interface

  14. A review on solar cells from Si-single crystals to porous materials and quantum dots.

    Science.gov (United States)

    Badawy, Waheed A

    2015-03-01

    Solar energy conversion to electricity through photovoltaics or to useful fuel through photoelectrochemical cells was still a main task for research groups and developments sectors. In this article we are reviewing the development of the different generations of solar cells. The fabrication of solar cells has passed through a large number of improvement steps considering the technological and economic aspects. The first generation solar cells were based on Si wafers, mainly single crystals. Permanent researches on cost reduction and improved solar cell efficiency have led to the marketing of solar modules having 12-16% solar conversion efficiency. Application of polycrystalline Si and other forms of Si have reduced the cost but on the expense of the solar conversion efficiency. The second generation solar cells were based on thin film technology. Thin films of amorphous Si, CIS (copper-indium-selenide) and t-Si were employed. Solar conversion efficiencies of about 12% have been achieved with a remarkable cost reduction. The third generation solar cells are based on nano-crystals and nano-porous materials. An advanced photovoltaic cell, originally developed for satellites with solar conversion efficiency of 37.3%, based on concentration of the solar spectrum up to 400 suns was developed. It is based on extremely thin concentration cells. New sensitizer or semiconductor systems are necessary to broaden the photo-response in solar spectrum. Hybrids of solar and conventional devices may provide an interim benefit in seeking economically valuable devices. New quantum dot solar cells based on CdSe-TiO2 architecture have been developed.

  15. A review on solar cells from Si-single crystals to porous materials and quantum dots

    Directory of Open Access Journals (Sweden)

    Waheed A. Badawy

    2015-03-01

    Full Text Available Solar energy conversion to electricity through photovoltaics or to useful fuel through photoelectrochemical cells was still a main task for research groups and developments sectors. In this article we are reviewing the development of the different generations of solar cells. The fabrication of solar cells has passed through a large number of improvement steps considering the technological and economic aspects. The first generation solar cells were based on Si wafers, mainly single crystals. Permanent researches on cost reduction and improved solar cell efficiency have led to the marketing of solar modules having 12–16% solar conversion efficiency. Application of polycrystalline Si and other forms of Si have reduced the cost but on the expense of the solar conversion efficiency. The second generation solar cells were based on thin film technology. Thin films of amorphous Si, CIS (copper–indium–selenide and t-Si were employed. Solar conversion efficiencies of about 12% have been achieved with a remarkable cost reduction. The third generation solar cells are based on nano-crystals and nano-porous materials. An advanced photovoltaic cell, originally developed for satellites with solar conversion efficiency of 37.3%, based on concentration of the solar spectrum up to 400 suns was developed. It is based on extremely thin concentration cells. New sensitizer or semiconductor systems are necessary to broaden the photo-response in solar spectrum. Hybrids of solar and conventional devices may provide an interim benefit in seeking economically valuable devices. New quantum dot solar cells based on CdSe–TiO2 architecture have been developed.

  16. Passivation of defect states in Si and Si/SiO2 interface states by cyanide treatment: improvement of characteristics of pin-junction amorphous Si and crystalline Si-based metal-oxide-semiconductor junction solar cells

    International Nuclear Information System (INIS)

    Fujiwara, N.; Fujinaga, T.; Niinobe, D.; Maida, O.; Takahashi, M.; Kobayashi, H.

    2003-01-01

    Defect states in Si can be passivated by cyanide treatment which simply involves immersion of Si materials in KCN solutions, followed by rinse. When the cyanide treatment is applied to pin-junction amorphous Si [a-Si] solar cells, the initial conversion efficiency increases. When the crown-ether cyanide treatment using a KCN solution of xylene containing 18-crown-6 is performed on i-a-Si films, decreases in the photo- and dark current densities with the irradiation time are prevented. The cyanide treatment can also passivate interface states present at Si/SiO 2 interfaces, leading to an increase in the conversion efficiency of 2 / Si (100)> solar cells.. Si-CN bonds formed by the reaction of defect states with cyanide ions have a high bond energy of about 4.5 eV and hence heat treatment at 800 0 C does not rupture the bonds, making thermal stability of the cyanide treatment.. When the cyanide treatment is applied to ultrathin SiO 2 /Si structure, the leakage current density is markedly decreased (Authors)

  17. Anisotropy of energy losses in high-current Z-pinches produced by the implosion of cylindrical tungsten wire arrays

    Science.gov (United States)

    Aleksandrov, V. V.; Volkov, G. S.; Grabovski, E. V.; Gritsuk, A. N.; Lakhtyushko, N. I.; Medovshchikov, S. F.; Oleinik, G. M.; Svetlov, E. V.

    2014-02-01

    Results are presented from measurements of the anisotropy of energy losses in high-current Z-pinches produced by the implosion of wire arrays at the ANGARA-5-1 facility at load currents of up to 4MA. The energy losses were measured in the radial direction and along the pinch axis from the anode side. The main diagnostics were time-integrated thermocouple calorimeters, nanosecond X-ray diodes (XRDs) with different filters, and a foil radiation calorimeter with a time resolution of 2 μs. The azimuthal anisotropy of energy losses was measured for different wire array configurations and different shapes of the high-voltage electrode. The presence of strong initial azimuthal inhomogeneity of the wire mass distribution (sectioned arrays), as well as the use of conical electrodes instead of plane ones, does not increase the azimuthal inhomogeneity of the total energy losses. For cylindrical wire arrays, energy losses in the radial direction are compared with those along the pinch axis. According to XRD and calorimetric measurements, the radiation yield per unit solid angle along the pinch axis is two to three times lower than that in the radial direction. In the axial direction, the energy flux density of the expanding plasma is two to three times lower than the radiation intensity. The measured radiation yield across the pinch is 2.5-5 kJ/sr, while that along the pinch axis is 1-2 kJ/sr. The results obtained by means of XRDs agree to within measurement errors with those obtained using the radiation calorimeter. It is found that the energy per unit solid angle carried by the expanding plasma in the radial direction does not exceed 10% of the soft X-ray yield. Analysis of the structure of time-integrated pinhole images and signals from the radial and axial XRDs shows that radiation emitted in the radial direction from the hot central region of the pinch is partially screened by the less dense surrounding plasma halo, whereas radiation emitted in the axial direction is a

  18. Three-dimensional imaging for precise structural control of Si quantum dot networks for all-Si solar cells.

    Science.gov (United States)

    Kourkoutis, Lena F; Hao, Xiaojing; Huang, Shujuan; Puthen-Veettil, Binesh; Conibeer, Gavin; Green, Martin A; Perez-Wurfl, Ivan

    2013-08-21

    All-Si tandem solar cells based on Si quantum dots (QDs) are a promising approach to future high-performance, thin film solar cells using abundant, stable and non-toxic materials. An important prerequisite to achieve a high conversion efficiency in such cells is the ability to control the geometry of the Si QD network. This includes the ability to control both, the size and arrangement of Si QDs embedded in a higher bandgap matrix. Using plasmon tomography we show the size, shape and density of Si QDs, that form in Si rich oxide (SRO)/SiO2 multilayers upon annealing, can be controlled by varying the SRO stoichiometry. Smaller, more spherical QDs of higher densities are obtained at lower Si concentrations. In richer SRO layers ellipsoidal QDs tend to form. Using electronic structure calculations within the effective mass approximation we show that ellipsoidal QDs give rise to reduced inter-QD coupling in the layer. Efficient carrier transport via mini-bands is in this case more likely across the multilayers provided the SiO2 spacer layer is thin enough to allow coupling in the vertical direction.

  19. Structural studies of n-type nc-Si-QD thin films for nc-Si solar cells

    Science.gov (United States)

    Das, Debajyoti; Kar, Debjit

    2017-12-01

    A wide optical gap nanocrystalline silicon (nc-Si) dielectric material is a basic requirement at the n-type window layer of nc-Si solar cells in thin film n-i-p structure on glass substrates. Taking advantage of the high atomic-H density inherent to the planar inductively coupled low-pressure (SiH4 + CH4)-plasma, development of an analogous material in P-doped nc-Si-QD/a-SiC:H network has been tried. Incorporation of C in the Si-network extracted from the CH4 widens the optical band gap; however, at enhanced PH3-dilution of the plasma spontaneous miniaturization of the nc-Si-QDs below the dimension of Bohr radius (∼4.5 nm) further enhances the band gap by virtue of the quantum size effect. At increased flow rate of PH3, dopant induced continuous amorphization of the intrinsic crystalline network is counterbalanced by the further crystallization promoted by the supplementary atomic-H extracted from PH3 (1% in H2) in the plasma, eventually holding a moderately high degree of crystallinity. The n-type wide band gap (∼1.93 eV) window layer with nc-Si-QDs in adequate volume fraction (∼52%) could furthermore be instrumental as an effective seed layer for advancing sequential crystallization in the i-layer of nc-Si solar cells with n-i-p structure in superstrate configuration.

  20. Influence of air exposure duration and a-Si capping layer thickness on the performance of p-BaSi{sub 2}/n-Si heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Takabe, Ryota; Yachi, Suguru; Tsukahara, Daichi; Takeuchi, Hiroki; Toko, Kaoru; Suemasu, Takashi, E-mail: suemasu@bk.tsukuba.ac.jp [Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Du, Weijie [Key Laboratory of Optoelectronic Material and Device, College of Mathematics and Science, Shanghai Normal University, Shanghai 200234 (China)

    2016-08-15

    Fabrication of p-BaSi{sub 2}(20 nm)/n-Si heterojunction solar cells was performed with different a-Si capping layer thicknesses (d{sub a-Si}) and varying air exposure durations (t{sub air}) prior to the formation of a 70-nm-thick indium-tin-oxide electrode. The conversion efficiencies (η) reached approximately 4.7% regardless of t{sub air} (varying from 12–150 h) for solar cells with d{sub a-Si} = 5 nm. In contrast, η increased from 5.3 to 6.6% with increasing t{sub air} for those with d{sub a-Si} = 2 nm, in contrast to our prediction. For this sample, the reverse saturation current density (J{sub 0}) and diode ideality factor decreased with t{sub air}, resulting in the enhancement of η. The effects of the variation of d{sub a-Si} (0.7, 2, 3, and 5 nm) upon the solar cell performance were examined while keeping t{sub air} = 150 h. The η reached a maximum of 9.0% when d{sub a-Si} was 3 nm, wherein the open-circuit voltage and fill factor also reached a maximum. The series resistance, shunt resistance, and J{sub 0} exhibited a tendency to decrease as d{sub a-Si} increased. These results demonstrate that a moderate oxidation of BaSi{sub 2} is a very effective means to enhance the η of BaSi{sub 2} solar cells.

  1. Quasi-isentropic compression using compressed water flow generated by underwater electrical explosion of a wire array

    Science.gov (United States)

    Gurovich, V.; Virozub, A.; Rososhek, A.; Bland, S.; Spielman, R. B.; Krasik, Ya. E.

    2018-05-01

    A major experimental research area in material equation-of-state today involves the use of off-Hugoniot measurements rather than shock experiments that give only Hugoniot data. There is a wide range of applications using quasi-isentropic compression of matter including the direct measurement of the complete isentrope of materials in a single experiment and minimizing the heating of flyer plates for high-velocity shock measurements. We propose a novel approach to generating quasi-isentropic compression of matter. Using analytical modeling and hydrodynamic simulations, we show that a working fluid composed of compressed water, generated by an underwater electrical explosion of a planar wire array, might be used to efficiently drive the quasi-isentropic compression of a copper target to pressures ˜2 × 1011 Pa without any complex target designs.

  2. Opacity and gradients in aluminum wire array z-pinch implosions on the Z pulsed power facility

    Energy Technology Data Exchange (ETDEWEB)

    Ampleford, D. J., E-mail: damplef@sandia.gov; Hansen, S. B.; Jennings, C. A.; Jones, B.; Coverdale, C. A.; Harvey-Thompson, A. J.; Rochau, G. A.; Dunham, G.; Moore, N. W.; Harding, E. C.; Cuneo, M. E. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Chong, Y.-K.; Clark, R. W.; Ouart, N.; Thornhill, J. W.; Giuliani, J.; Apruzese, J. P. [Naval Research Laboratory, Washington, DC 20375 (United States)

    2014-03-15

    Aluminum wire array z pinches imploded on the Z generator are an extremely bright source of 1–2 keV radiation, with close to 400 kJ radiated at photon energies >1 keV and more than 50 kJ radiated in a single line (Al Ly-α). Opacity plays a critical role in the dynamics and K-shell radiation efficiency of these pinches. Where significant structure is present in the stagnated pinch this acts to reduce the effective opacity of the system as demonstrated by direct analysis of spectra. Analysis of time-integrated broadband spectra (0.8–25 keV) indicates electron temperatures ranging from a few 100 eV to a few keV are present, indicative of substantial temperature gradients.

  3. Fast determination of the current loss mechanisms in textured crystalline Si-based solar cells

    Science.gov (United States)

    Nakane, Akihiro; Fujimoto, Shohei; Fujiwara, Hiroyuki

    2017-11-01

    A quite general device analysis method that allows the direct evaluation of optical and recombination losses in crystalline silicon (c-Si)-based solar cells has been developed. By applying this technique, the current loss mechanisms of the state-of-the-art solar cells with ˜20% efficiencies have been revealed. In the established method, the optical and electrical losses are characterized from the analysis of an experimental external quantum efficiency (EQE) spectrum with very low computational cost. In particular, we have performed the EQE analyses of textured c-Si solar cells by employing the experimental reflectance spectra obtained directly from the actual devices while using flat optical models without any fitting parameters. We find that the developed method provides almost perfect fitting to EQE spectra reported for various textured c-Si solar cells, including c-Si heterojunction solar cells, a dopant-free c-Si solar cell with a MoOx layer, and an n-type passivated emitter with rear locally diffused solar cell. The modeling of the recombination loss further allows the extraction of the minority carrier diffusion length and surface recombination velocity from the EQE analysis. Based on the EQE analysis results, the current loss mechanisms in different types of c-Si solar cells are discussed.

  4. Balance of optical, structural, and electrical properties of textured liquid phase crystallized Si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Preidel, V., E-mail: veit.preidel@helmholtz-berlin.de; Amkreutz, D.; Haschke, J.; Wollgarten, M.; Rech, B.; Becker, C. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Division Renewable Energy, Kekuléstr. 5, 12489 Berlin (Germany)

    2015-06-14

    Liquid phase crystallized Si thin-film solar cells on nanoimprint textured glass substrates exhibiting two characteristic, but distinct different surface structures are presented. The impact of the substrate texture on light absorption, the structural Si material properties, and the resulting solar cell performance is analyzed. A pronounced periodic substrate texture with a vertical feature size of about 1 μm enables excellent light scattering and light trapping. However, it also gives rise to an enhanced Si crystal defect formation deteriorating the solar cell performance. In contrast, a random pattern with a low surface roughness of 45 nm allows for the growth of Si thin films being comparable to Si layers on planar reference substrates. Amorphous Si/crystalline Si heterojunction solar cells fabricated on the low-roughness texture exhibit a maximum open circuit voltage of 616 mV and internal quantum efficiency peak values exceeding 90%, resulting in an efficiency potential of 13.2%. This demonstrates that high quality crystalline Si thin films can be realized on nanoimprint patterned glass substrates by liquid phase crystallization inspiring the implementation of tailor-made nanophotonic light harvesting concepts into future liquid phase crystallized Si thin film solar cells on glass.

  5. Design guideline for Si/organic hybrid solar cell with interdigitated back contact structure

    Science.gov (United States)

    Bimo Prakoso, Ari; Rusli; Li, Zeyu; Lu, Chenjin; Jiang, Changyun

    2018-03-01

    We study the design of Si/organic hybrid (SOH) solar cells with interdigitated back contact (IBC) structure. SOH solar cells formed between n-Si and poly(3,4-ethylenedioxythiophene): polystyrenesulphonate (PEDOT:PSS) is a promising concept that combines the excellent electronic properties of Si with the solution-based processing advantage of an organic polymer. The IBC cell structure is employed to minimize parasitic absorption losses in the organic polymer, eliminate grid shadowing losses, and allow excellent passivation of the front Si surface in one step over a large area. The influence of Si thickness, doping concentration and contact geometry are simulated in this study to optimize the performance of the SOH-IBC solar cell. We found that a high power conversion efficiency of >20% can be achieved for optimized SOH-IBC cell based on a thin c-Si substrate of 40 μm thickness.

  6. Design of a 5-MA 100-ns linear-transformer-driver accelerator for wire array Z-pinch experiments

    Science.gov (United States)

    Zhou, Lin; Li, Zhenghong; Wang, Zhen; Liang, Chuan; Li, Mingjia; Qi, Jianmin; Chu, Yanyun

    2016-03-01

    The linear-transformer-driver (LTD) is a recently developed pulsed-power technology that shows great promise for a number of applications. These include a Z -pinch-driven fission-fusion-hybrid reactor that is being developed by the Chinese Academy of Engineering Physics. In support of the reactor development effort, we are planning to build an LTD-based accelerator that is optimized for driving wire-array Z -pinch loads. The accelerator comprises six modules in parallel, each of which has eight series 0.8-MA LTD cavities in a voltage-adder configuration. Vacuum transmission lines are used from the interior of the adder to the central vacuum chamber where the load is placed. Thus the traditional stack-flashover problem is eliminated. The machine is 3.2 m tall and 12 m in outer diameter including supports. A prototype cavity was built and tested for more than 6000 shots intermittently at a repetition rate of 0.1 Hz. A novel trigger, in which only one input trigger pulse is needed by utilizing an internal trigger brick, was developed and successfully verified in these shots. A full circuit modeling was conducted for the accelerator. The simulation result shows that a current pulse rising to 5.2 MA in 91 ns (10%-90%) can be delivered to the wire-array load, which is 1.5 cm in height, 1.2 cm in initial radius, and 1 mg in mass. The maximum implosion velocity of the load is 32 cm /μ s when compressed to 0.1 of the initial radius. The maximum kinetic energy is 78 kJ, which is 11.7% of the electric energy stored in the capacitors. This accelerator is supposed to enable a radiation energy efficiency of 20%-30%, providing a high efficient facility for research on the fast Z pinch and technologies for repetition-rate-operated accelerators.

  7. Reduction in interface defect density in p-BaSi2/n-Si heterojunction solar cells by a modified pretreatment of the Si substrate

    Science.gov (United States)

    Yamashita, Yudai; Yachi, Suguru; Takabe, Ryota; Sato, Takuma; Emha Bayu, Miftahullatif; Toko, Kaoru; Suemasu, Takashi

    2018-02-01

    We have investigated defects that occurred at the interface of p-BaSi2/n-Si heterojunction solar cells that were fabricated by molecular beam epitaxy. X-ray diffraction measurements indicated that BaSi2 (a-axis-oriented) was subjected to in-plane compressive strain, which relaxed when the thickness of the p-BaSi2 layer exceeded 50 nm. Additionally, transmission electron microscopy revealed defects in the Si layer near steps that were present on the Si(111) substrate. Deep level transient spectroscopy revealed two different electron traps in the n-Si layer that were located at 0.33 eV (E1) and 0.19 eV (E2) below the conduction band edge. The densities of E1 and E2 levels in the region close to the heterointerface were approximately 1014 cm-3. The density of these electron traps decreased below the limits of detection following Si pretreatment to remove the oxide layers from the n-Si substrate, which involved heating the substrate to 800 °C for 30 min under ultrahigh vacuum while depositing a layer of Si (1 nm). The remaining traps in the n-Si layer were hole traps located at 0.65 eV (H1) and 0.38 eV (H2) above the valence band edge. Their densities were as low as 1010 cm-3. Following pretreatment, the current versus voltage characteristics of the p-BaSi2/n-Si solar cells under AM1.5 illumination were reproducible with conversion efficiencies beyond 5% when using a p-BaSi2 layer thickness of 100 nm. The origin of the H2 level is discussed.

  8. Investigation of dynamics of soft X-ray radiation of mixed-material wire-arrays on S-300 pulsed power generator

    NARCIS (Netherlands)

    Cai, HC; Chernenko, AC; Korolev, VD; Ustroev, GI; Ivanov, MI

    2004-01-01

    The dynamics of radiation spectra of fast Z-pinch plasmas was studied. The experiments were carried out on the S-300 pulsed power machine (4 MA, 0.15 Omega, 100 ns). By means of the polychromator, X-ray spectra of imploding wire arrays were measured in the range of 60 divided by 1500 eV, where the

  9. Unbiased, complete solar charging of a neutral flow battery by a single Si photocathode

    DEFF Research Database (Denmark)

    Wedege, Kristina; Bae, Dowon; Dražević, Emil

    2018-01-01

    Solar redox flow batteries have attracted attention as a possible integrated technology for simultaneous conversion and storage of solar energy. In this work, we review current efforts to design aqueous solar flow batteries in terms of battery electrolyte capacity, solar conversion efficiency...... and depth of solar charge. From a materials cost and design perspective, a simple, cost-efficient, aqueous solar redox flow battery will most likely incorporate only one semiconductor, and we demonstrate here a system where a single photocathode is accurately matched to the redox couples to allow...... for a complete solar charge. The single TiO2 protected Si photocathode with a catalytic Pt layer can fully solar charge a neutral TEMPO-sulfate/ferricyanide battery with a cell voltage of 0.35 V. An unbiased solar conversion efficiency of 1.6% is obtained and this system represents a new strategy in solar RFBs...

  10. The study of poly-Si n+pp+ solar cells

    International Nuclear Information System (INIS)

    Aboud, S.R.

    1990-01-01

    The electrical and optical properties such as (activation energy, optical energy gap, and gap state density) of the polycrystalline silicon (poly-Si) have been studied. A comparative study between the chemical and mechanical polishing to clean and polish the poly-Si surface were done through the measurement of the reflectivity of these surfaces. A group of solar cells of type n + pp + were prepared, using p-type poly-Si wafers (SISLO). Solar cells were also prepared using single silicon (Sing-Si) with and, without (BSF) to study the effect of (BSF) on Sing-Si cell and a comparative study between poly-Si cell and Sing-Si cell under the same conditions. 2 tabs.; 45 figs.; 49 refs

  11. Performance Improvement of Microcrystalline p-SiC/i-Si/n-Si Thin Film Solar Cells by Using Laser-Assisted Plasma Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Hsin-Ying Lee

    2014-01-01

    Full Text Available The microcrystalline p-SiC/i-Si/n-Si thin film solar cells treated with hydrogen plasma were fabricated at low temperature using a CO2 laser-assisted plasma enhanced chemical vapor deposition (LAPECVD system. According to the micro-Raman results, the i-Si films shifted from 482 cm−1 to 512 cm−1 as the assisting laser power increased from 0 W to 80 W, which indicated a gradual transformation from amorphous to crystalline Si. From X-ray diffraction (XRD results, the microcrystalline i-Si films with (111, (220, and (311 diffraction were obtained. Compared with the Si-based thin film solar cells deposited without laser assistance, the short-circuit current density and the power conversion efficiency of the solar cells with assisting laser power of 80 W were improved from 14.38 mA/cm2 to 18.16 mA/cm2 and from 6.89% to 8.58%, respectively.

  12. Modelling on c-Si/a-Si:H wire solar cells: some key parameters to optimize the photovoltaic performance

    Directory of Open Access Journals (Sweden)

    Alvarez J.

    2012-07-01

    Full Text Available Solar cells based on silicon nano- or micro-wires have attracted much attention as a promising path for low cost photovoltaic technology. The key point of this structure is the decoupling of the light absorption from the carriers collection. In order to predict and optimize the performance potential of p- (or n- doped c-Si/ n-(or p- doped a-Si:H nanowire-based solar cells, we have used the Silvaco-Atlas software to model a single-wire device. In particular, we have noticed a drastic decrease of the open-circuit voltage (Voc when increasing the doping density of the silicon core beyond an optimum value. We present here a detailed study of the parameters that can alter the Voc of c-Si(p/a-Si:H (n wires according to the doping density in c-Si. A comparison with simulation results obtained on planar c-Si/a-Si:H heterojunctions shows that the drop in Voc, linked to an increase of the dark current in both structures, is more pronounced for radial junctions due to geometric criteria. These numerical modelling results have lead to a better understanding of transport phenomena within the wire.

  13. Si surface passivation by SiOx:H films deposited by a low-frequency ICP for solar cell applications

    International Nuclear Information System (INIS)

    Zhou, H P; Wei, D Y; Xu, S; Xiao, S Q; Xu, L X; Huang, S Y; Guo, Y N; Khan, S; Xu, M

    2012-01-01

    Hydrogenated silicon suboxide (SiO x :H) thin films are fabricated by a low-frequency inductively coupled plasma of hydrogen-diluted SiH 4 + CO 2 at a low temperature (100 °C). Introduction of a small amount of oxygen into the film results in a predominantly amorphous structure, wider optical bandgap, increased H content, lower conductivity and higher activation energy. The minority carrier lifetime in the SiO x :H-passivated p-type Si substrate is up to 428 µs with a reduced incubation layer at the interface. The associated surface recombination velocity is as low as 70 cm s -1 . The passivation behaviour dominantly originates from the H-related chemical passivation. The passivation effect is also demonstrated by the excellent photovoltaic performance of the heterojunction solar cell with the SiO x :H-based passivation and emitter layers.

  14. Passivation of Si solar cells by hetero-epitaxial compound semiconductor coatings

    Science.gov (United States)

    Vernon, S. M.; Spitzer, M. B.; Keavney, C. J.; Haven, V. E.; Sekula, P. A.

    1986-01-01

    A development status evaluation is made for high efficiency Si solar cells, with emphasis on the suppression of the deleterious effects of surface recombination. ZnS(0.9)Se(0.1) and GaP are identified as candidates for the reduction of surface recombination. Attention is given to methods developed for the deposition of heteroepitaxial compounds designed to block minority carrier transport to the Si solar cell surface without interfering with the majority carrier flow.

  15. Limiting efficiency of generalized realistic c-Si solar cells coupled to ideal up-converters

    Science.gov (United States)

    Johnson, Craig M.; Conibeer, Gavin J.

    2012-11-01

    The detailed balance model of photovoltaic up-conversion is revised for the specific case of a c-Si solar cell under the AM1.5G solar spectrum. The limiting efficiency of an ideal solar cell with a band gap of 1.117 eV may be increased from approximately 33% to 40% with ideal up-conversion. However, real solar cells do not demonstrate the step-function absorption characteristic assumed in the standard detailed balance model. Here, we use tabulated Si refractive index data to develop a generalized model of a realistic conventional c-Si solar cell. The model incorporates optical design and material parameters such as free carrier absorption that have a non-trivial impact on the operation of the up-conversion layer. While these modifications are shown to decrease the absolute limiting efficiency, the benefit of up-conversion is shown to be relatively greater.

  16. InGaP solar cell on Ge-on-Si virtual substrate for novel solar power conversion

    Science.gov (United States)

    Kim, T. W.; Albert, B. R.; Kimerling, L. C.; Michel, J.

    2018-02-01

    InGaP single-junction solar cells are grown on lattice-matched Ge-on-Si virtual substrates using metal-organic chemical vapor deposition. Optoelectronic simulation results indicate that the optimal collection length for InGaP single-junction solar cells with a carrier lifetime range of 2-5 ns is wider than approximately 1 μm. Electron beam-induced current measurements reveal that the threading dislocation density (TDD) of InGaP solar cells fabricated on Ge and Ge-on-Si substrates is in the range of 104-3 × 107 cm-2. We demonstrate that the open circuit voltage (Voc) of InGaP solar cells is not significantly influenced by TDDs less than 2 × 106 cm-2. Fabricated InGaP solar cells grown on a Ge-on-Si virtual substrate and a Ge substrate exhibit Voc in the range of 0.96 to 1.43 V under an equivalent illumination in the range of ˜0.5 Sun. The estimated efficiency of the InGaP solar cell fabricated on the Ge-on-Si virtual substrate (Ge substrate) at room temperature for the limited incident spectrum spanning the photon energy range of 1.9-2.4 eV varies from 16.6% to 34.3%.

  17. Growth and characterization of textured well-faceted ZnO on planar Si(100, planar Si(111, and textured Si(100 substrates for solar cell applications

    Directory of Open Access Journals (Sweden)

    Chin-Yi Tsai

    2017-09-01

    Full Text Available In this work, textured, well-faceted ZnO materials grown on planar Si(100, planar Si(111, and textured Si(100 substrates by low-pressure chemical vapor deposition (LPCVD were analyzed by X-ray diffraction (XRD, scanning electron microscopy (SEM, atomic force microscopy (AFM, and cathode luminescence (CL measurements. The results show that ZnO grown on planar Si(100, planar Si(111, and textured Si(100 substrates favor the growth of ZnO(110 ridge-like, ZnO(002 pyramid-like, and ZnO(101 pyramidal-tip structures, respectively. This could be attributed to the constraints of the lattice mismatch between the ZnO and Si unit cells. The average grain size of ZnO on the planar Si(100 substrate is slightly larger than that on the planar Si(111 substrate, while both of them are much larger than that on the textured Si(100 substrate. The average grain sizes (about 10–50 nm of the ZnO grown on the different silicon substrates decreases with the increase of their strains. These results are shown to strongly correlate with the results from the SEM, AFM, and CL as well. The reflectance spectra of these three samples show that the antireflection function provided by theses samples mostly results from the nanometer-scaled texture of the ZnO films, while the micrometer-scaled texture of the Si substrate has a limited contribution. The results of this work provide important information for optimized growth of textured and well-faceted ZnO grown on wafer-based silicon solar cells and can be utilized for efficiency enhancement and optimization of device materials and structures, such as heterojunction with intrinsic thin layer (HIT solar cells.

  18. Design, Modeling, Fabrication & Characterization of Industrial Si Solar Cells

    Science.gov (United States)

    Chowdhury, Ahrar Ahmed

    Photovoltaic is a viable solution towards meeting the energy demand in an ecofriendly environment. To ensure the mass access in photovoltaic electricity, cost effective approach needs to be adapted. This thesis aims towards substrate independent fabrication process in order to achieve high efficiency cost effective industrial Silicon (Si) solar cells. Most cost-effective structures, such as, Al-BSF (Aluminum Back Surface Field), FSF (Front Surface Field) and bifacial cells are investigated in detail to exploit the efficiency potentials. First off, we introduced two-dimensional simulation model to design and modeling of most commonly used Si solar cells in today's PV arena. Best modelled results of high efficiency Al-BSF, FSF and bifacial cells are 20.50%, 22% and 21.68% respectively. Special attentions are given on the metallization design on all the structures in order to reduce the Ag cost. Furthermore, detail design and modeling were performed on FSF and bifacial cells. The FSF cells has potentials to gain 0.42%abs efficiency by combining the emitter design and front surface passivation. The prospects of bifacial cells can be revealed with the optimization of gridline widths and gridline numbers. Since, bifacial cells have metallization on both sides, a double fold cost saving is possible via innovative metallization design. Following modeling an effort is undertaken to reach the modelled result in fabrication the process. We proposed substrate independent fabrication process aiming towards establishing simultaneous processing sequences for both monofacial and bifacial cells. Subsequently, for the contact formation cost effective screen-printed technology is utilized throughout this thesis. The best Al-BSF cell attained efficiency ˜19.40%. Detail characterization was carried out to find a roadmap of achieving >20.50% efficiency Al-BSF cell. Since, n-type cell is free from Light Induced degradation (LID), recently there is a growing interest on FSF cell. Our

  19. Above-CMOS a-Si and CIGS Solar Cells for Powering Autonomous Microsystems

    NARCIS (Netherlands)

    Lu, J.; Liu, W.; van der Werf, C.H.M.; Kovalgin, A.Y.; Sun, Y.; Schropp, R.E.I.; Schmitz, J.

    2010-01-01

    Two types of solar cells are successfully grown on chips from two CMOS generations. The efficiency of amorphous-silicon (a-Si) solar cells reaches 5.2%, copperindium-gallium-selenide (CIGS) cells 7.1%. CMOS functionality is unaffected. The main integration issues: adhesion, surface topography, metal

  20. Investigation of InGaN/Si double junction tandem solar cells | Bouzid ...

    African Journals Online (AJOL)

    In this work, the solar power conversion efficiency of InGaN/Si double junction tandem solar cells was investigated under 1-sun AM1.5 illumination, using realistic material parameters. With this intention, the current-voltage curves are calculated for different front recombination velocities and the influence of the bottom cell ...

  1. Design of a 5-MA 100-ns linear-transformer-driver accelerator for wire array Z-pinch experiments

    Directory of Open Access Journals (Sweden)

    Zhou Lin

    2016-03-01

    Full Text Available The linear-transformer-driver (LTD is a recently developed pulsed-power technology that shows great promise for a number of applications. These include a Z-pinch-driven fission-fusion-hybrid reactor that is being developed by the Chinese Academy of Engineering Physics. In support of the reactor development effort, we are planning to build an LTD-based accelerator that is optimized for driving wire-array Z-pinch loads. The accelerator comprises six modules in parallel, each of which has eight series 0.8-MA LTD cavities in a voltage-adder configuration. Vacuum transmission lines are used from the interior of the adder to the central vacuum chamber where the load is placed. Thus the traditional stack-flashover problem is eliminated. The machine is 3.2 m tall and 12 m in outer diameter including supports. A prototype cavity was built and tested for more than 6000 shots intermittently at a repetition rate of 0.1 Hz. A novel trigger, in which only one input trigger pulse is needed by utilizing an internal trigger brick, was developed and successfully verified in these shots. A full circuit modeling was conducted for the accelerator. The simulation result shows that a current pulse rising to 5.2 MA in 91 ns (10%–90% can be delivered to the wire-array load, which is 1.5 cm in height, 1.2 cm in initial radius, and 1 mg in mass. The maximum implosion velocity of the load is 32  cm/μs when compressed to 0.1 of the initial radius. The maximum kinetic energy is 78 kJ, which is 11.7% of the electric energy stored in the capacitors. This accelerator is supposed to enable a radiation energy efficiency of 20%–30%, providing a high efficient facility for research on the fast Z pinch and technologies for repetition-rate-operated accelerators.

  2. CVD-Based Valence-Mending Passivation for Crystalline-Si Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Tao, Meng [Arizona State Univ., Mesa, AZ (United States)

    2015-03-01

    The objective of this project is to investigate a new surface passivation technique, valence-mending passivation, for its applications in crystalline-Si solar cells to achieve significant efficiency improvement and cost reduction. As the enabling technique, the project includes the development of chemical vapor deposition recipes to passivate textured Si(100) and multicrystalline-Si surfaces by sulfur and the characterization of the passivated Si surfaces, including thermal stability, Schottky barrier height, contact resistance and surface recombination. One important application is to replace the Ag finger electrode in Si cells with Al to reduce cost, by ~$0.1/Wp, and allow terawatt-scale deployment of crystalline-Si solar cells. These all-Al Si cells require a low-temperature metallization process for the Al electrode, to be compatible with valence-mending passivation and to prevent Al diffusion into n-type Si. Another application is to explore valence-mending passivation of grain boundaries in multicrystalline Si by diffusing sulfur into grain boundaries, to reduce the efficiency gas between monocrystalline-Si solar cells and multicrystalline-Si cells. The major accomplishments of this project include: 1) Demonstration of chemical vapor deposition processes for valence-mending passivation of both monocrystalline Si(100) and multicrystalline Si surfaces. Record Schottky barriers have been demonstrated, with the new record-low barrier of less than 0.08 eV between Al and sulfur-passivated n-type Si(100) and the new record-high barrier of 1.14 eV between Al and sulfur-passivated p-type Si(100). On the textured p-type monocrystalline Si(100) surface, the highest barrier with Al is 0.85 eV by valence-mending passivation. 2) Demonstration of a low-temperature metallization process for Al in crystalline-Si solar cells. The new metallization process is based on electroplating of Al in a room-temperature ionic liquid. The resistivity of the electroplated Al is ~7×10–6

  3. Tuning the colors of c-Si solar cells by exploiting plasmonic effects

    Science.gov (United States)

    Peharz, G.; Grosschädl, B.; Prietl, C.; Waldhauser, W.; Wenzl, F. P.

    2016-09-01

    The color of a crystalline silicon (c-Si) solar cell is mainly determined by its anti-reflective coating. This is a lambda/4 coating made from a transparent dielectric material. The thickness of the anti-reflective coating is optimized for maximal photocurrent generation, resulting in the typical blue or black colors of c-Si solar cells. However, for building-integrated photovoltaic (BiPV) applications the color of the solar cells is demanded to be tunable - ideally by a cheap and flexible coating process on standard (low cost) c-Si solar cells. Such a coating can be realized by applying plasmonic coloring which is a rapidly growing technology for high-quality color filtering and rendering for different fields of application (displays, imaging,…). In this contribution, we present results of an approach for tuning the color of standard industrial c-Si solar cells that is based on coating them with metallic nano-particles. In particular, thin films (green and brownish/red. The position of the resonance peak in the reflection spectrum was found to be almost independent from the angle of incidence. This low angular sensitivity is a clear advantage compared to alternative color tuning methods, for which additional dielectric thin films are deposited on c-Si solar cells.

  4. Study on the Fabrication of Paint-Type Si Quantum Dot-Sensitized Solar Cells

    Science.gov (United States)

    Seo, Hyunwoong; Son, Min-Kyu; Kim, Hee-Je; Wang, Yuting; Uchida, Giichiro; Kamataki, Kunihiro; Itagaki, Naho; Koga, Kazunori; Shiratani, Masaharu

    2013-10-01

    Quantum dots (QDs) have attracted much attention with their quantum characteristics in the research field of photochemical solar cells. Si QD was introduced as one of alternatives to conventional QD materials. However, their large particles could not penetrate inside TiO2 layer. Therefore, this work proposed the paint-type Si QD-sensitized solar cell. Its heat durability was suitable for the fabrication of paint-type solar cell. Si QDs were fabricated by multihollow discharge plasma chemical vapor deposition and characterized. The paste type, sintering temperature, and Si ratio were controlled and analyzed for better performance. Finally, its performance was enhanced by ZnS surface modification and the whole process was much simplified without sensitizing process.

  5. X-ray emission from a high-atomic-number z-pinch plasma created from compact wire arrays

    International Nuclear Information System (INIS)

    Sanford, T.W.L.; Mosher, D.; De Groot, J.S.

    1996-01-01

    Thermal and nonthermal x-ray emission from the implosion of compact tungsten wire arrays in 5-MA Saturn discharges is reported. The timing of multiple implosions and the thermal x-ray spectra (1 to 10 keV) agree with 2D radiation-hydrocode simulations. Nonthermal x-ray emission (10 to 100 keV) correlates with pinch spots distributed along the z-axis. The similarities of the measured nonthermal spectrum, yield, and pinch-spot emission with those of 0.8-MA, single-exploded-wire discharges on Gamble-II suggest a common nonthermal-production mechanism. Nonthermal x-ray yields are lower than expected from current scaling of Gamble II results, suggesting that implosion geometries are not as efficient as single-wire geometries for nonthermal x-ray production. The instabilities, azimuthal asymmetries, and inferred multiple implosions that accompany the implosion geometry lead to larger, more irregular pinch spots, a likely reason for reduced nonthermal efficiency. A model for nonthermal-electron acceleration across magnetic fields in highly-collisional, high-atomic-number plasmas combined with 1D hydrocode simulations of Saturn compact loads predicts weak nonthermal x-ray emission. (author). 3 figs., 10 refs

  6. X-ray emission from a high-atomic-number z-pinch plasma created from compact wire arrays

    International Nuclear Information System (INIS)

    Sanford, T.W.L.; Mosher, D.; De Groot, J.S.

    1996-01-01

    Thermal and nonthermal x-ray emission from the implosion of compact tungsten wire arrays in 5-MA Saturn discharges is reported. The timing of multiple implosions and the thermal x-ray spectra (1 to 10 keV) agree with 2D radiation-hydrocode simulations. Nonthermal x-ray emission (10 to 100 keV) correlates with pinch spots distributed along the z-axis. The similarities of the measured nonthermal spectrum, yield, and pinch-spot emission with those of 0.8-MA, single- exploded-wire discharges on Gamble-II suggest a common nonthermal- production mechanism. Nonthermal x-ray yields are lower than expected from current scaling of Gamble II results, suggesting that implosion geometries are not as efficient as single-wire geometries for nonthermal x-ray production. The instabilities, azimuthal asymmetries, and inferred multiple implosions that accompany the implosion geometry lead to larger, more irregular pinch spots, a likely reason for reduced nonthermal efficiency. A model for nonthermal-electron acceleration across magnetic fields in highly- collisional, high-atomic-number plasmas combined with 1D hydrocode simulations of Saturn compact loads predicts weak nonthermal x-ray emission

  7. Wire-array initiation and interwire-plasma merger concerns in PBFA-Z tungsten z-pinch implosions

    Energy Technology Data Exchange (ETDEWEB)

    Sanford, T.W.L.; Spielman, R.B.; Allshouse, G.O. [Sandia National Labs., Albuquerque, NM (United States)] [and others

    1997-12-31

    Experiments with annular wire-array loads to generate high quality, high-power, z-pinch implosions on Saturn have shown the importance of maintaining azimuthal symmetry and how the individual wire plasmas merge to form a plasma shell. Here the authors discuss the impact of current symmetry, current prepulse, interwire spacing, and wire size on generating high-quality, high-power, z-pinch implosions on PBFA-Z, with annular tungsten wire loads. B-dot monitors measured the current as a function of azimuth in the MITLs and 4.5 cm upstream of the load. Bolometers and filtered XRDs and PCDs, spanning the energy range {approximately} 0 eV to 6 keV, monitored the temporal characteristics of the radiation. Time-integrated and time-resolved, filtered, fast-framing, x-ray pinhole cameras, and a crystal spectrometer monitored the spatial and spectral structure of the radiation. The radial dynamics of single-wire plasmas from the solid-state, using the measured current, was calculated by 1D radiation magnetohydrodynamics code (RMHC) and used as input to an xy RMHC. These calculations together with 2D RMHC simulations in the rz plane are discussed and correlated with the measurements.

  8. Wire-array initiation and interwire-plasma merger concerns in PBFA-Z tungsten z-pinch implosions

    International Nuclear Information System (INIS)

    Sanford, T.W.L.; Spielman, R.B.; Allshouse, G.O.

    1997-01-01

    Experiments with annular wire-array loads to generate high quality, high-power, z-pinch implosions on Saturn have shown the importance of maintaining azimuthal symmetry and how the individual wire plasmas merge to form a plasma shell. Here the authors discuss the impact of current symmetry, current prepulse, interwire spacing, and wire size on generating high-quality, high-power, z-pinch implosions on PBFA-Z, with annular tungsten wire loads. B-dot monitors measured the current as a function of azimuth in the MITLs and 4.5 cm upstream of the load. Bolometers and filtered XRDs and PCDs, spanning the energy range ∼ 0 eV to 6 keV, monitored the temporal characteristics of the radiation. Time-integrated and time-resolved, filtered, fast-framing, x-ray pinhole cameras, and a crystal spectrometer monitored the spatial and spectral structure of the radiation. The radial dynamics of single-wire plasmas from the solid-state, using the measured current, was calculated by 1D radiation magnetohydrodynamics code (RMHC) and used as input to an xy RMHC. These calculations together with 2D RMHC simulations in the rz plane are discussed and correlated with the measurements

  9. Characterization of β-FeSi II films as a novel solar cell semiconductor

    Science.gov (United States)

    Fukuzawa, Yasuhiro; Ootsuka, Teruhisa; Otogawa, Naotaka; Abe, Hironori; Nakayama, Yasuhiko; Makita, Yunosuke

    2006-04-01

    β-FeSi II is an attractive semiconductor owing to its extremely high optical absorption coefficient (α>10 5 cm -1), and is expected to be an ideal semiconductor as a thin film solar cell. For solar cell use, to prepare high quality β-FeSi II films holding a desired Fe/Si ratio, we chose two methods; one is a molecular beam epitaxy (MBE) method in which Fe and Si were evaporated by using normal Knudsen cells, and occasionally by e-gun for Si. Another one is the facing-target sputtering (FTS) method in which deposition of β-FeSi II films is made on Si substrate that is placed out of gas plasma cloud. In both methods to obtain β-FeSi II films with a tuned Fe/Si ratio, Fe/Si super lattice was fabricated by varying Fe and Si deposition thickness. Results showed significant in- and out-diffusion of host Fe and Si atoms at the interface of Si substrates into β-FeSi II layers. It was experimentally demonstrated that this diffusion can be suppressed by the formation of template layer between the epitaxial β-FeSi II layer and the substrate. The template layer was prepared by reactive deposition epitaxy (RDE) method. By fixing the Fe/Si ratio as precisely as possible at 1/2, systematic doping experiments of acceptor (Ga and B) and donor (As) impurities into β-FeSi II were carried out. Systematical changes of electron and hole carrier concentration in these samples along variation of incorporated impurities were observed through Hall effect measurements. Residual carrier concentrations can be ascribed to not only the remaining undesired impurities contained in source materials but also to a variety of point defects mainly produced by the uncontrolled stoichiometry. A preliminary structure of n-β-FeSi II/p-Si used as a solar cell indicated a conversion efficiency of 3.7%.

  10. Enhanced blue responses in nanostructured Si solar cells by shallow doping

    Science.gov (United States)

    Cheon, Sieun; Jeong, Doo Seok; Park, Jong-Keuk; Kim, Won Mok; Lee, Taek Sung; Lee, Heon; Kim, Inho

    2018-03-01

    Optimally designed Si nanostructures are very effective for light trapping in crystalline silicon (c-Si) solar cells. However, when the lateral feature size of Si nanostructures is comparable to the junction depth of the emitter, dopant diffusion in the lateral direction leads to excessive doping in the nanostructured emitter whereby poor blue responses arise in the external quantum efficiency (EQE). The primary goal of this study is to find the correlation of emitter junction depth and carrier collection efficiency in nanostructured c-Si solar cells in order to enhance the blue responses. We prepared Si nanostructures of nanocone shape by colloidal lithography, with silica beads of 520 nm in diameter, followed by a reactive ion etching process. c-Si solar cells with a standard cell architecture of an Al back surface field were fabricated varying the emitter junction depth. We varied the emitter junction depth by adjusting the doping level from heavy doping to moderate doping to light doping and achieved greatly enhanced blue responses in EQE from 47%-92% at a wavelength of 400 nm. The junction depth analysis by secondary ion mass-spectroscopy profiling and the scanning electron microscopy measurements provided us with the design guide of the doping level depending on the nanostructure feature size for high efficiency nanostructured c-Si solar cells. Optical simulations showed us that Si nanostructures can serve as an optical resonator to amplify the incident light field, which needs to be considered in the design of nanostructured c-Si solar cells.

  11. Epitaxial Ge Solar Cells Directly Grown on Si (001) by MOCVD Using Isobutylgermane

    Science.gov (United States)

    Kim, Youngjo; Kim, Kangho; Lee, Jaejin; Kim, Chang Zoo; Kang, Ho Kwan; Park, Won-Kyu

    2018-03-01

    Epitaxial Ge layers have been grown on Si (001) substrates by metalorganic chemical vapor deposition (MOCVD) using an isobutylgermane (IBuGe) metalorganic source. Low and high temperature two-step growth and post annealing techniques are employed to overcome the lattice mismatch problem between Ge and Si. It is demonstrated that high quality Ge epitaxial layers can be grown on Si (001) by using IBuGe with surface RMS roughness of 2 nm and an estimated threading dislocation density of 4.9 × 107 cm -2. Furthermore, single-junction Ge solar cells have been directly grown on Si substrates with an in situ MOCVD growth. The epitaxial Ge p- n junction structures are investigated with transmission electron microscopy and electrochemical C- V measurements. As a result, a power conversion efficiency of 1.69% was achieved for the Ge solar cell directly grown on Si substrate under AM1.5G condition.

  12. EELS measurements of boron concentration profiles in p-a-Si and nip a-Si solar cells

    DEFF Research Database (Denmark)

    Van Aken, Bas B.; Duchamp, Martial; Boothroyd, Chris

    2012-01-01

    The p-type Si layer in a-Si and μc-Si solar cells on foil needs to fulfil several important requirements. The layer is necessary to create the electric field that separates the photo-generated charge carriers; the doping also increases the conductivity to conduct the photocurrent to the front......-3, using core-loss EELS combined with numerical analysis. We control the band gap and activation energy of p-a-SiC by varying the B2H6 and CH4 flow during deposition in the process chamber. We have found a linear relation between the activation energy of the dark conductivity Eact and the optical...... band gap E04. Modelling shows that the optimum efficiency in nip solar cells is obtained when the p-a-SiC band gap is slightly larger than the band gap of the absorber layer. We have assessed the potential of core-loss EELS for detecting B and C concentrations as low as 1020cm-3 in a spatially resolved...

  13. Experimental study of surface insulated-standard hybrid tungsten planar wire array Z-pinches at “QiangGuang-I” facility

    Energy Technology Data Exchange (ETDEWEB)

    Sheng, Liang; Peng, Bodong; Yuan, Yuan; Zhang, Mei; Zhao, Chen; Zhao, Jizhen; Wang, Liangping [State Key Laboratory of Intense Pulsed Radiation Simulation and Effect (Northwest Institute of Nuclear Technology), Xi' an 710024 (China); Li, Yang, E-mail: liyang@nint.ac.cn; Li, Mo [State Key Laboratory of Intense Pulsed Radiation Simulation and Effect (Northwest Institute of Nuclear Technology), Xi' an 710024 (China); Xi' an Jiaotong University, Xi' an 710049 (China)

    2016-01-15

    The experimental results of the insulated-standard hybrid wire array Z pinches carried out on “QiangGuang-I” facility at Northwest Institute of Nuclear Technology were presented and discussed. The surface insulating can impose a significant influence on the dynamics and radiation characteristics of the hybrid wire array Z pinches, especially on the early stage (t/t{sub imp} < 0.6). The expansion of insulated wires at the ablation stage is suppressed, while the streams stripped from the insulated wires move faster than that from the standard wires. The foot radiation of X-ray is enhanced by increment of the number of insulated wires, 19.6 GW, 33.6 GW, and 68.6 GW for shots 14037S, 14028H, and 14039I, respectively. The surface insulation also introduces nonhomogeneity along the single wire—the streams move much faster near the electrodes. The colliding boundary of the hybrid wire array Z pinches is bias to the insulated side approximately 0.6 mm.

  14. Implosion dynamics of a megampere wire-array Z-pinch with an inner low-density foam shell at the Angara-5-1 facility

    International Nuclear Information System (INIS)

    Aleksandrov, V. V.; Bolkhovitinov, E. A.; Volkov, G. S.; Grabovski, E. V.; Gritsuk, A. N.; Medovshchikov, S. F.; Oleinik, G. M.; Rupasov, A. A.; Frolov, I. N.

    2016-01-01

    The implosion dynamics of a pinch with a highly inhomogeneous initial axial distribution of the load mass was studied experimentally. A cascade array consisting of a double nested tungsten wire array and a coaxial inner cylindrical shell located symmetrically with respect to the high-voltage electrodes was used as a load of the Angara-5-1 high-current generator. The cylindrical foam shell was half as long as the cathode− anode gap, and its diameter was equal to the diameter of the inner wire array. It is shown experimentally that two stages are typical of the implosion dynamics of such a load: the formation of two separate pinches formed as a result of implosion of the wire array near the cathode and anode and the subsequent implosion of the central part of the load containing the cylindrical foam shell. The conditions are determined at which the implosion of the central part of the pinch with the foam cylinder is preceded by intense irradiation of the foam with the soft X-ray (SXR) emission generated by the near-electrode pinches and converting it into the plasma state. Using such a load, which models the main elements of the scheme of a dynamic hohlraum for inertial confinement fusion, it is possible to increase the efficiency of interaction between the outer accelerated plasma sheath and the inner foam shell by preionizing the foam with the SXR emission of the near-electrode pinches.

  15. GaAsP solar cells on GaP/Si with low threading dislocation density

    International Nuclear Information System (INIS)

    Yaung, Kevin Nay; Vaisman, Michelle; Lang, Jordan; Lee, Minjoo Larry

    2016-01-01

    GaAsP on Si tandem cells represent a promising path towards achieving high efficiency while leveraging the Si solar knowledge base and low-cost infrastructure. However, dislocation densities exceeding 10"8 cm"−"2 in GaAsP cells on Si have historically hampered the efficiency of such approaches. Here, we report the achievement of low threading dislocation density values of 4.0–4.6 × 10"6 cm"−"2 in GaAsP solar cells on GaP/Si, comparable with more established metamorphic solar cells on GaAs. Our GaAsP solar cells on GaP/Si exhibit high open-circuit voltage and quantum efficiency, allowing them to significantly surpass the power conversion efficiency of previous devices. The results in this work show a realistic path towards dual-junction GaAsP on Si cells with efficiencies exceeding 30%.

  16. a-Si:H/c-Si heterojunction front- and back contacts for silicon solar cells with p-type base

    Energy Technology Data Exchange (ETDEWEB)

    Rostan, Philipp Johannes

    2010-07-01

    This thesis reports on low temperature amorphous silicon back and front contacts for high-efficiency crystalline silicon solar cells with a p-type base. The back contact uses a sequence of intrinsic amorphous (i-a-Si:H) and boron doped microcrystalline (p-{mu}c-Si:H) silicon layers fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) and a magnetron sputtered ZnO:Al layer. The back contact is finished by evaporating Al onto the ZnO:Al and altogether prepared at a maximum temperature of 220 C. Analysis of the electronic transport of mobile charge carriers at the back contact shows that the two high-efficiency requirements low back contact series resistance and high quality c-Si surface passivation are in strong contradiction to each other, thus difficult to achieve at the same time. The preparation of resistance- and effective lifetime samples allows one to investigate both requirements independently. Analysis of the majority charge carrier transport on complete Al/ZnO:Al/a-Si:H/c-Si back contact structures derives the resistive properties. Measurements of the effective minority carrier lifetime on a-Si:H coated wafers determines the back contact surface passivation quality. Both high-efficiency solar cell requirements together are analyzed in complete photovoltaic devices where the back contact series resistance mainly affects the fill factor and the back contact passivation quality mainly affects the open circuit voltage. The best cell equipped with a diffused emitter with random texture and a full-area a-Si:H/c-Si back contact has an independently confirmed efficiency {eta} = 21.0 % with an open circuit voltage V{sub oc} = 681 mV and a fill factor FF = 78.7 % on an area of 1 cm{sup 2}. An alternative concept that uses a simplified a-Si:H layer sequence combined with Al-point contacts yields a confirmed efficiency {eta} = 19.3 % with an open circuit voltage V{sub oc} = 655 mV and a fill factor FF = 79.5 % on an area of 2 cm{sup 2}. Analysis of the

  17. Impact of porous SiC-doped PVA based LDS layer on electrical parameters of Si solar cells

    Science.gov (United States)

    Kaci, S.; Rahmoune, R.; Kezzoula, F.; Boudiaf, Y.; Keffous, A.; Manseri, A.; Menari, H.; Cheraga, H.; Guerbous, L.; Belkacem, Y.; Chalal, R.; Bozetine, I.; Boukezzata, A.; Talbi, L.; Benfadel, K.; Ouadfel, M.-A.; Ouadah, Y.

    2018-06-01

    Nowadays, the advanced photon management is regarded as an area of intensive research investment. Ever since the most widely used commercial photovoltaic cells are fabricated with single gap semiconductors like silicon, photon management has offered opportunities to make better use of the photons, both inside and outside the single junction window. In this study, the impact of new down shifting layer on the photoelectrical parameters of silicon based solar cell was studied. An effort to enhance the photovoltaic performance of textured silicon solar cells through the application of porous SiC particles-doped polyvinyl alcohol (PVA) layers using the spin-coating technique, is reported. Current-voltage curves under artificial illumination were used to confirm the contribution of LDS (SiC-PVA) thin layers. Experiment results revealed that LDS based on SiC particles which were etched in HF/K2S2O8 solution at T = 80 °C under UV light of 254 nm exhibited the best solar cell photoelectrical parameters due to its strong photoluminescence.

  18. Argon plasma treatment of silicon nitride (SiN) for improved antireflection coating on c-Si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, Hemanta; Mitra, Suchismita; Saha, Hiranmay; Datta, Swapan Kumar; Banerjee, Chandan, E-mail: chandanbanerjee74@gmail.com

    2017-01-15

    Highlights: • Antireflection properties of argon plasma treated silicon nitride layer and its effect on crystalline silicon solar cell. • The reduction in reflection due to the formation of a silicon oxynitride/silicon nitride double layer. • EQE reveals a relative increase of 2.72% in J{sub sc} and 4.46% in conversion efficiency. - Abstract: Antireflection properties of argon plasma treated silicon nitride layer and its effect on crystalline silicon solar cell is presented here. Hydrogenated silicon nitride (a-SiN:H) layer has been deposited on a silicon substrate by Plasma Enhanced Chemical Vapour Deposition (PECVD) using a mixture of silane (SiH{sub 4}), ammonia (NH{sub 3}) and hydrogen (H{sub 2}) gases followed by a argon plasma treatment. Optical analysis reveals a significant reduction in reflectance after argon plasma treatment of silicon nitride layer. While FESEM shows nanostructures on the surface of the silicon nitride film, FTIR reveals a change in Si−N, Si−O and N−H bonds. On the other hand, ellipsometry shows the variation of refractive index and formation of double layer. Finally, a c-Si solar cell has been fabricated with the said anti-reflection coating. External quantum efficiency reveals a relative increase of 2.72% in the short circuit current density and 4.46% in conversion efficiency over a baseline efficiency of 16.58%.

  19. X-ray emission from a high-atomic-number z-pinch plasma created from compact wire arrays

    International Nuclear Information System (INIS)

    Sanford, T.W.L.; Nash, T.J.; Marder, B.M.

    1996-03-01

    Thermal and nonthermal x-ray emission from the implosion of compact tungsten wire arrays, driven by 5 MA from the Saturn accelerator, are measured and compared with LLNL Radiation-Hydro-Code (RHC) and SNL Hydro-Code (HC) numerical models. Multiple implosions, due to sequential compressions and expansions of the plasma, are inferred from the measured multiple x-radiation bursts. Timing of the multiple implosions and the thermal x-ray spectra measured between 1 and 10 keV are consistent with the RHC simulations. The magnitude of the nonthermal x-ray emission measured from 10 to 100 keV ranges from 0.02 to 0.08% of the total energy radiated and is correlated with bright-spot emission along the z-axis, as observed in earlier Gamble-11 single exploding-wire experiments. The similarities of the measured nonthermal spectrum and bright-spot emission with those measured at 0.8 MA on Gamble-II suggest a common production mechanism for this process. A model of electron acceleration across magnetic fields in highly-collisional, high-atomic-number plasmas is developed, which shows the existence of a critical electric field, E c , below which strong nonthermal electron creation (and the associated nonthermal x rays) do not occur. HC simulations show that significant nonthermal electrons are not expected in this experiment (as observed) because the calculated electric fields are at least one to two orders-of-magnitude below E c . These negative nonthermal results are confirmed by RHC simulations using a nonthermal model based on a Fokker-Plank analysis. Lastly, the lower production efficiency and the larger, more irregular pinch spots formed in this experiment relative to those measured on Gamble II suggest that implosion geometries are not as efficient as single exploding-wire geometries for warm x-ray production

  20. The wire array Z-pinch: an efficient x-ray source for ICF and a new ion heating mechanism

    Science.gov (United States)

    Haines, M. G.

    2008-10-01

    The Z-pinch provides an efficient x-ray source for driving a hohlraum for inertial confinement fusion. The basic physics of wire-array implosions is reviewed. It can be understood in several sequential stages. Firstly, the wires heat and form a surrounding vapour which ionizes, causing the current to transfer to this lower resistance. The J×B global force leads to ejection of this plasma towards the axis to form a precursor plasma. The wire cores continue to ablate due to the heat flux from the Joule-heated nearby plasma. The cooling of this plasma by the wire-cores leads to a low magnetic Reynolds number so that the precursor plasma carries little or no current. When gaps appear in the liquid/vapour cores the plasma temperature and Reynolds number rise and this plasma accelerates in towards the axis carrying the current. This is the main implosion, and it sweeps up earlier ablated plasma, which acts to reduce Rayleigh-Taylor growth. At stagnation, the ion kinetic energy is thermalized and equipartition heats the electrons, which then radiate in a 5 ns pulse. In some conditions the energy radiated by soft x-rays exceeds the ion kinetic energy by a factor of 3 or 4. A theory has been developed to explain this in which fine-scale, fast growing m= 0 MHD instabilities grow to saturation, viscous dissipation of which leads to ion heating, followed by equipartition. World record ion temperatures of 2-3 billion Kelvin were predicted, and measured at Sandia National Laboratory. Lastly, progress in capsule implosions and in application to inertial fusion energy is reported.

  1. The influence of passivation and photovoltaic properties of α-Si:H coverage on silicon nanowire array solar cells

    Science.gov (United States)

    2013-01-01

    Silicon nanowire (SiNW) arrays for radial p-n junction solar cells offer potential advantages of light trapping effects and quick charge collection. Nevertheless, lower open circuit voltages (Voc) lead to lower energy conversion efficiencies. In such cases, the performance of the solar cells depends critically on the quality of the SiNW interfaces. In this study, SiNW core-shell solar cells have been fabricated by growing crystalline silicon (c-Si) nanowires via the metal-assisted chemical etching method and by depositing hydrogenated amorphous silicon (α-Si:H) via the plasma-enhanced chemical vapor deposition (PECVD) method. The influence of deposition parameters on the coverage and, consequently, the passivation and photovoltaic properties of α-Si:H layers on SiNW solar cells have been analyzed. PMID:24059343

  2. Realization of Quasi-Omnidirectional Solar Cells with Superior Electrical Performance by All-Solution-Processed Si Nanopyramids.

    Science.gov (United States)

    Zhong, Sihua; Wang, Wenjie; Tan, Miao; Zhuang, Yufeng; Shen, Wenzhong

    2017-11-01

    Large-scale (156 mm × 156 mm) quasi-omnidirectional solar cells are successfully realized and featured by keeping high cell performance over broad incident angles (θ), via employing Si nanopyramids (SiNPs) as surface texture. SiNPs are produced by the proposed metal-assisted alkaline etching method, which is an all-solution-processed method and highly simple together with cost-effective. Interestingly, compared to the conventional Si micropyramids (SiMPs)-textured solar cells, the SiNPs-textured solar cells possess lower carrier recombination and thus superior electrical performances, showing notable distinctions from other Si nanostructures-textured solar cells. Furthermore, SiNPs-textured solar cells have very little drop of quantum efficiency with increasing θ, demonstrating the quasi-omnidirectional characteristic. As an overall result, both the SiNPs-textured homojunction and heterojunction solar cells possess higher daily electric energy production with a maximum relative enhancement approaching 2.5%, when compared to their SiMPs-textured counterparts. The quasi-omnidirectional solar cell opens a new opportunity for photovoltaics to produce more electric energy with a low cost.

  3. Dependence of Performance of Si Nanowire Solar Cells on Geometry of the Nanowires

    Directory of Open Access Journals (Sweden)

    Firoz Khan

    2014-01-01

    Full Text Available The dependence of performance of silicon nanowires (SiNWs solar cells on the growth condition of the SiNWs has been described. Metal-assisted electroless etching (MAE technique has been used to grow SiNWs array. Different concentration of aqueous solution containing AgNO3 and HF for Ag deposition is used. The diameter and density of SiNWs are found to be dependent on concentration of solution used for Ag deposition. The diameter and density of SiNWs have been used to calculate the filling ratio of the SINWs arrays. The filling ratio is increased with increase in AgNO3 concentration, whereas it is decreased with increase in HF concentration. The minimum reflectance value achieved is ~1% for SiNWs of length of ~1.2 μm in the wavelength range of 300–1000 nm. The performance and diode parameters strongly depend on the geometry of SiNWs. The maximum short circuit current density achieved is 35.6 mA/cm2. The conversion efficiency of solar cell is 9.73% for SiNWs with length, diameter, and wire density of ~1.2 μm, ~75 nm, and 90 μm−2, respectively.

  4. Dependence of performance of Si nanowire solar cells on geometry of the nanowires.

    Science.gov (United States)

    Khan, Firoz; Baek, Seong-Ho; Kim, Jae Hyun

    2014-01-01

    The dependence of performance of silicon nanowires (SiNWs) solar cells on the growth condition of the SiNWs has been described. Metal-assisted electroless etching (MAE) technique has been used to grow SiNWs array. Different concentration of aqueous solution containing AgNO3 and HF for Ag deposition is used. The diameter and density of SiNWs are found to be dependent on concentration of solution used for Ag deposition. The diameter and density of SiNWs have been used to calculate the filling ratio of the SINWs arrays. The filling ratio is increased with increase in AgNO3 concentration, whereas it is decreased with increase in HF concentration. The minimum reflectance value achieved is ~1% for SiNWs of length of ~1.2 μ m in the wavelength range of 300-1000 nm. The performance and diode parameters strongly depend on the geometry of SiNWs. The maximum short circuit current density achieved is 35.6 mA/cm(2). The conversion efficiency of solar cell is 9.73% for SiNWs with length, diameter, and wire density of ~1.2 μ m, ~75 nm, and 90 μ m(-2), respectively.

  5. Photovoltaic enhancement of Si solar cells by assembled carbon nanotubes

    Institute of Scientific and Technical Information of China (English)

    Y.F.Zhang; Y.F.Wang; N.Chen; Y.Y.Wang; Y.Z.Zhang; Z.H.Zhou; L.M.Wei

    2010-01-01

    Photovoltaic conversion was enhanced by directly assemble of a network of single-walled carbon nanotubes(SWNTs) onto the surface of n-p junction silicon solar cells. When the density of SWNTs increased from 50 to 400 tubes μm-2, an enhancement of 3.92% in energy conversion efficiency was typically obtained. The effect of the SWNTs network is proposed for trapping incident photons and assisting electronic transportation at the interface of silicon solar cells.

  6. Application of rapid thermal processing on SiNx thin film to solar cells

    Institute of Scientific and Technical Information of China (English)

    Youjie LI; Peiqing LUO; Zhibin ZHOU; Rongqiang CUI; Jianhua HUANG; Jingxiao WANG

    2008-01-01

    Rapid thermal processing (RTP) of SiNx thin films from PECVD with low temperature was investigated. A special processing condition of this technique which could greatly increase the minority lifetime was found in the experiments. The processing mechanism and the application of the technique to silicon solar cells fabrication were dis-cussed. A main achievement is an increase of the minority lifetime in silicon wafer with SiNx thin film by about 200% after the RTP was reached. PC-1D simulation results exhibit an enhancement of the efficiency of the solar cell by 0.42% coming from the minority lifetime improvement. The same experiment was also conducted with P-diffusion silicon wafers, but the increment of minority lifetime is just about 55%. It could be expected to improve the solar cell efficiency if it would be used in silicon solar cells fabrication with the combination of laser firing contact technique.

  7. Modeling Three-Terminal III-V/Si Tandem Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Warren, Emily L.; Deceglie, Michael G.; Stradins, Paul; Tamboli, Adele C.

    2017-06-27

    Three-terminal (3T) tandem cells fabricated by combining an interdigitated back contact (IBC) Si device with a wider bandgap top cell have the potential to provide a robust operating mechanism to efficiently capture the solar spectrum without the need to current match sub-cells or fabricate complicated metal interconnects between cells. Here we develop a two dimensional device physics model to study the behavior of IBC Si solar cells operated in a 3T configuration. We investigate how different cell designs impact device performance and discuss the analysis protocol used to understand and optimize power produced from a single junction, 3T device.

  8. Effect of BaSi2 template growth duration on the generation of defects and performance of p-BaSi2/n-Si heterojunction solar cells

    Science.gov (United States)

    Yachi, Suguru; Takabe, Ryota; Deng, Tianguo; Toko, Kaoru; Suemasu, Takashi

    2018-04-01

    We investigated the effect of BaSi2 template growth duration (t RDE = 0-20 min) on the defect generation and performance of p-BaSi2/n-Si heterojunction solar cells. The p-BaSi2 layer grown by molecular beam epitaxy (MBE) was 15 nm thick with a hole concentration of 2 × 1018 cm-3. The conversion efficiency η increased for films grown at long t RDE, owing to improvements of the open-circuit voltage (V OC) and fill factor (FF), reaching a maximum of η = 8.9% at t RDE = 7.5 min. However, η decreased at longer and shorter t RDE owing to lower V OC and FF. Using deep-level transient spectroscopy, we detected a hole trap level 190 meV above the valence band maximum for the sample grown without the template (t RDE = 0 min). An electron trap level 106 meV below the conduction band minimum was detected for a sample grown with t RDE = 20 min. The trap densities for both films were (1-2) × 1013 cm-3. The former originated from the diffusion of Ba into the n-Si region; the latter originated from defects in the template layer. The crystalline qualities of the template and MBE-grown layers were discussed. The root-mean-square surface roughness of the template reached a minimum of 0.51 nm at t RDE = 7.5 min. The a-axis orientation of p-BaSi2 thin films degraded as t RDE exceeded 10 min. In terms of p-BaSi2 crystalline quality and solar cell performance, the optimum t RDE was determined to be 7.5 min, corresponding to approximately 4 nm in thickness.

  9. Carrier loss mechanisms in textured crystalline Si-based solar cells

    OpenAIRE

    Nakane, Akihiro; Fujimoto, Shohei; Fujiwara, Hiroyuki

    2017-01-01

    A quite general device analysis method that allows the direct evaluation of optical and recombination losses in crystalline silicon (c-Si)-based solar cells has been developed. By applying this technique, the optical and physical limiting factors of the state-of-the-art solar cells with ~20% efficiencies have been revealed. In the established method, the carrier loss mechanisms are characterized from the external quantum efficiency (EQE) analysis with very low computational cost. In particula...

  10. Variation in the Optical Properties of the SiC-SiO2 Composite Antireflection Layer in Crystalline Silicon Solar Cells by Annealing

    Science.gov (United States)

    Jannat, Azmira; Li, Zhen Yu; Akhter, M. Shaheer; Yang, O.-Bong

    2017-11-01

    This study showed the effects of annealing on a sol-gel-derived SiC-SiO2 composite antireflection (AR) layer and investigated the optical and photovoltaic properties of crystalline silicon (Si) solar cells. The SiC-SiO2 composite AR coating showed a considerable decrease in reflectance from 7.18% to 3.23% at varying annealing temperatures of 450-800°C. The refractive indices of the SiC-SiO2 composite AR layer were tuned from 2.06 to 2.45 with the increase in annealing temperature. The analysis of the current density-voltage characteristics indicated that the energy conversion efficiencies of the fabricated Si solar cells gradually increased from 16.99% to 17.73% with increasing annealing temperatures of 450-800°C. The annealing of the SiC-SiO2 composite AR layer in Si solar cells was crucial to improving the optical, morphological, and photovoltaic properties.

  11. Internal transmission coefficient in charges carrier generation layer of graphene/Si based solar cell device

    International Nuclear Information System (INIS)

    Rosikhin, Ahmad; Winata, Toto

    2016-01-01

    Internal transmission profile in charges carrier generation layer of graphene/Si based solar cell has been explored theoretically. Photovoltaic device was constructed from graphene/Si heterojunction forming a multilayer stuck with Si as generation layer. The graphene/Si sheet was layered on ITO/glass wafer then coated by Al forming Ohmic contact with Si. Photon incident propagate from glass substrate to metal electrode and assumed that there is no transmission in Al layer. The wavelength range spectra used in this calculation was 200 – 1000 nm. It found that transmission intensity in the generation layer show non-linear behavior and partitioned by few areas which related with excitation process. According to this information, it may to optimize the photons absorption to create more excitation process by inserting appropriate material to enhance optical properties in certain wavelength spectra because of the exciton generation is strongly influenced by photon absorption.

  12. Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells.

    Science.gov (United States)

    Di, Dawei; Perez-Wurfl, Ivan; Gentle, Angus; Kim, Dong-Ho; Hao, Xiaojing; Shi, Lei; Conibeer, Gavin; Green, Martin A

    2010-08-01

    As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide (SiO(2)) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been fabricated. The total thickness of the solar cell material is 420 nm. The cells contain 4 nm diameter Si quantum dots. The impacts of post-metallisation treatments such as phosphoric acid (H(3)PO(4)) etching, nitrogen (N(2)) gas anneal and forming gas (Ar: H(2)) anneal on the cells' electrical and photovoltaic properties are investigated. The Si QD solar cells studied in this work have achieved an open circuit voltage of 410 mV after various processes. Parameters extracted from dark I-V, light I-V and circular transfer length measurement (CTLM) suggest limiting mechanism in the Si QD solar cell operation and possible approaches for further improvement.

  13. Block Textured a-Si:H Solar Cell

    Directory of Open Access Journals (Sweden)

    Seung Jae Moon

    2014-01-01

    Full Text Available A series of etching experiments on light trapping structure have been carried out by glass etching. The block structure provides long light traveling path and a constant distance between the cathode and anode electrodes regardless of the block height, which results in higher efficiency of the block textured solar cell. In terms of etching profile of the glass substrate, the addition of NH4F resulted in the smooth and clean etching profile, and the steep slope of the block was obtained by optimizing the composition of etching solution. For a higher HF concentration, a more graded slope was obtained and the addition of HNO3 and NH4F provided steep slope and clean etching profile. The effects of the block textured glass were verified by a comparison of the solar cell efficiency. For the textured solar cell, the surface was much rougher than that of the plain glass, which also contributes to the improvement of the efficiency. We accomplished block shaped light trapping structure for the first time by wet etching of the glass substrate, which enables the high efficiency thin film solar cell with the aid of the good step coverage deposition.

  14. Tuning back contact property via artificial interface dipoles in Si/organic hybrid solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Dan [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Department of Physics and Institute of Solid-state electronics physical, Ningbo University, Ningbo 315211 (China); Sheng, Jiang, E-mail: shengjiang@nimte.ac.cn; Wu, Sudong; Zhu, Juye; Chen, Shaojie; Gao, Pingqi; Ye, Jichun, E-mail: jichun.ye@nimte.ac.cn [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)

    2016-07-25

    Back contact property plays a key role in the charge collection efficiency of c-Si/poly(3,4-ethylthiophene):poly(styrenesulfonate) hybrid solar cells (Si-HSCs), as an alternative for the high-efficiency and low-cost photovoltaic devices. In this letter, we utilize the water soluble poly (ethylene oxide) (PEO) to modify the Al/Si interface to be an Ohmic contact via interface dipole tuning, decreasing the work function of the Al film. This Ohmic contact improves the electron collection efficiency of the rear electrode, increasing the short circuit current density (J{sub sc}). Furthermore, the interface dipoles make the band bending downward to increase the total barrier height of built-in electric field of the solar cell, enhancing the open circuit voltage (V{sub oc}). The PEO solar cell exhibits an excellent performance, 12.29% power conversion efficiency, a 25.28% increase from the reference solar cell without a PEO interlayer. The simple and water soluble method as a promising alternative is used to develop the interfacial contact quality of the rear electrode for the high photovoltaic performance of Si-HSCs.

  15. Characterization of a Ga-assisted GaAs nanowire array solar cell on si substrate

    DEFF Research Database (Denmark)

    Boulanger, J. P.; Chia, A. C. E.; Wood, B.

    2016-01-01

    A single-junction core-shell GaAs nanowire (NW) solar cell on Si (1 1 1) substrates is presented. A Ga-assisted vapor–liquid–solid growth mechanism was used for the formation of a patterned array of radial p-i-n GaAs NWs encapsulated in AlInP passivation. Novel device fabrication utilizing facet-...

  16. Thermal storage/discharge performances of Cu-Si alloy for solar thermochemical process

    Science.gov (United States)

    Gokon, Nobuyuki; Yamaguchi, Tomoya; Cho, Hyun-seok; Bellan, Selvan; Hatamachi, Tsuyoshi; Kodama, Tatsuya

    2017-06-01

    The present authors (Niigata University, Japan) have developed a tubular reactor system using novel "double-walled" reactor/receiver tubes with carbonate molten-salt thermal storage as a phase change material (PCM) for solar reforming of natural gas and with Al-Si alloy thermal storage as a PCM for solar air receiver to produce high-temperature air. For both of the cases, the high heat capacity and large latent heat (heat of solidification) of the PCM phase circumvents the rapid temperature change of the reactor/receiver tubes at high temperatures under variable and uncontinuous characteristics of solar radiation. In this study, we examined cyclic properties of thermal storage/discharge for Cu-Si alloy in air stream in order to evaluate a potentiality of Cu-Si alloy as a PCM thermal storage material. Temperature-increasing performances of Cu-Si alloy are measured during thermal storage (or heat-charge) mode and during cooling (or heat-discharge) mode. A oxidation state of the Cu-Si alloy after the cyclic reaction was evaluated by using electron probe micro analyzer (EPMA).

  17. Analysis of the PEDOT:PSS/Si nanowire hybrid solar cell with a tail state model

    Science.gov (United States)

    Ho, Kuan-Ying; Li, Chi-Kang; Syu, Hong-Jhang; Lai, Yi; Lin, Ching-Fuh; Wu, Yuh-Renn

    2016-12-01

    In this paper, the electrical properties of the poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS)/silicon nanowire hybrid solar cell have been analyzed and an optimized structure is proposed. In addition, the planar PEDOT:PSS/c-Si hybrid solar cell is also modeled for comparison. We first developed a simulation software which is capable of modeling organic/inorganic hybrid solar cells by including Gaussian shape density of states into Poisson and drift-diffusion solver to present the tail states and trap states in the organic material. Therefore, the model can handle carrier transport, generation, and recombination in both organic and inorganic materials. Our results show that at the applied voltage near open-circuit voltage (Voc), the recombination rate becomes much higher at the PEDOT:PSS/Si interface region, which limits the fill factor and Voc. Hence, a modified structure with a p-type amorphous silicon (a-Si) layer attached on the interface of Si layer and an n+-type Si layer inserted near the bottom contact are proposed. The highest conversion efficiency of 16.10% can be achieved if both structures are applied.

  18. Physical and electrical characteristics of Si/SiC quantum dot superlattice solar cells with passivation layer of aluminum oxide.

    Science.gov (United States)

    Tsai, Yi-Chia; Li, Yiming; Samukawa, Seiji

    2017-12-01

    In this work, we numerically simulate the silicon (Si)/silicon carbide (SiC) quantum dot superlattice solar cell (SiC-QDSL) with aluminum oxide (Al 2 O 3 -QDSL) passivation. By exploiting the passivation layer of Al 2 O 3 , the high photocurrent and the conversion efficiency can be achieved without losing the effective bandgap. Based on the two-photon transition mechanism in an AM1.5 and a one sun illumination, the simulated short-circuit current (J sc ) of 4.77 mA cm -2 is very close to the experimentally measured 4.75 mA cm -2 , which is higher than those of conventional SiC-QDSLs. Moreover, the efficiency fluctuation caused by the structural variation is less sensitive by using the passivation layer. A high conversion efficiency of 17.4% is thus estimated by adopting the QD's geometry used in the experiment; and, it can be further boosted by applying a hexagonal QD formation with an inter-dot spacing of 0.3 nm.

  19. Physical and electrical characteristics of Si/SiC quantum dot superlattice solar cells with passivation layer of aluminum oxide

    Science.gov (United States)

    Tsai, Yi-Chia; Li, Yiming; Samukawa, Seiji

    2017-12-01

    In this work, we numerically simulate the silicon (Si)/silicon carbide (SiC) quantum dot superlattice solar cell (SiC-QDSL) with aluminum oxide (Al2O3-QDSL) passivation. By exploiting the passivation layer of Al2O3, the high photocurrent and the conversion efficiency can be achieved without losing the effective bandgap. Based on the two-photon transition mechanism in an AM1.5 and a one sun illumination, the simulated short-circuit current (J sc) of 4.77 mA cm-2 is very close to the experimentally measured 4.75 mA cm-2, which is higher than those of conventional SiC-QDSLs. Moreover, the efficiency fluctuation caused by the structural variation is less sensitive by using the passivation layer. A high conversion efficiency of 17.4% is thus estimated by adopting the QD’s geometry used in the experiment; and, it can be further boosted by applying a hexagonal QD formation with an inter-dot spacing of 0.3 nm.

  20. Status On Multi-microsecond Prepulse Technique On Sphinx Machine Going From Nested To Single Wire Array For 800 ns Implosion Time Z-pinch

    Science.gov (United States)

    Maury, P.; Calamy, H.; Grunenwald, J.; Lassalle, F.; Zucchini, F.; Loyen, A.; Georges, A.; Morell, A.; Bedoch, J. P.

    2009-01-01

    The Sphinx machine[1] is a 6 MA, 1 μS driver based on the LTD technology, used for Z-pinch experiments. Important improvements of Sphinx radiation output were recently obtained using a multi-microsecond current prepulse[2]. Total power per unit of length is multiplied by a factor of 6 and FWHM divided by a factor of 2.5. Early breakdown of the wires during the prepulse phase dramatically changes the ablation phase leading to an improvement of axial homogeneity of both the implosion and the final radiating column. As a consequence, the cathode bubble observed on classical shots is definitively removed. The implosion is then centered and zippering effect is reduced, leading to simultaneous x-ray emission of the whole length. A great reproducibility is obtained. Nested arrays were used before to mitigate the Rayleigh-Taylor instabilities during the implosion phase. Further experiments with pre-pulse technique are described here were inner array was removed. The goal of these experiments was to see if long prepulse could give stable enough implosion with single array and at the same time increase the η parameter by reducing the mass of the load. Experimental results of single wire array loads of typical dimension 5 cm in height with implosion time between 700 and 900 ns and diameter varying between 80 and 140 mm are given. Parameters of the loads were varying in term of radius and number of wires. Comparisons with nested wire array loads are done and trends are proposed. Characteristics of both the implosion and the final radiating column are shown. 2D MHD numerical simulations of single wire array become easier as there is no interaction between outer and inner array anymore. A systematic study was done using injection mass model to benchmark simulation with experiments.

  1. Status On Multi-microsecond Prepulse Technique On Sphinx Machine Going From Nested To Single Wire Array For 800 ns Implosion Time Z-pinch

    International Nuclear Information System (INIS)

    Maury, P.; Calamy, H.; Grunenwald, J.; Lassalle, F.; Zucchini, F.; Loyen, A.; Georges, A.; Morell, A.; Bedoch, J. P.

    2009-01-01

    The Sphinx machine [1] is a 6 MA, 1 μS driver based on the LTD technology, used for Z-pinch experiments. Important improvements of Sphinx radiation output were recently obtained using a multi-microsecond current prepulse [2] . Total power per unit of length is multiplied by a factor of 6 and FWHM divided by a factor of 2.5. Early breakdown of the wires during the prepulse phase dramatically changes the ablation phase leading to an improvement of axial homogeneity of both the implosion and the final radiating column. As a consequence, the cathode bubble observed on classical shots is definitively removed. The implosion is then centered and zippering effect is reduced, leading to simultaneous x-ray emission of the whole length. A great reproducibility is obtained. Nested arrays were used before to mitigate the Rayleigh-Taylor instabilities during the implosion phase. Further experiments with pre-pulse technique are described here were inner array was removed. The goal of these experiments was to see if long prepulse could give stable enough implosion with single array and at the same time increase the η parameter by reducing the mass of the load. Experimental results of single wire array loads of typical dimension 5 cm in height with implosion time between 700 and 900 ns and diameter varying between 80 and 140 mm are given. Parameters of the loads were varying in term of radius and number of wires. Comparisons with nested wire array loads are done and trends are proposed. Characteristics of both the implosion and the final radiating column are shown. 2D MHD numerical simulations of single wire array become easier as there is no interaction between outer and inner array anymore. A systematic study was done using injection mass model to benchmark simulation with experiments.

  2. Characteristics of photocurrent generation in the near-ultraviolet region in Si quantum-dot sensitized solar cells

    International Nuclear Information System (INIS)

    Uchida, Giichiro; Sato, Muneharu; Seo, Hyunwoong; Kamataki, Kunihiro; Itagaki, Naho; Koga, Kazunori; Shiratani, Masaharu

    2013-01-01

    We have studied photocurrent generation in Si quantum-dot (QD) sensitized solar cells, where QD thin films composed of Si nanoparticles were deposited using the double multi-hollow discharge plasma chemical vapor deposition process in an SiH 4 /H 2 and CH 4 or N 2 gas mixture. The short-circuit current density of the Si QD sensitized solar cells increases by a factor of 2.5 by using Si nanoparticles prepared by irradiation of CH 4 or N 2 plasma onto the Si nanoparticle surface. We have measured incident photon-to-current conversion efficiency (IPCE) in the near-ultraviolet range using quartz-glass front panels of the QD sensitized solar cells. With decreasing the wavelength of irradiation light, IPCE gradually increases upon light irradiation in a wavelength range less than about 600 nm, and then steeply increases below 300 nm, corresponding to 2.2 times the optical band-gap energy of Si QD film. - Highlights: • We have developed on Si quantum-dot sensitized solar cells using Si particles. • Current of solar cells increases by surface-termination of Si particles. • Incident photo-to-current conversion efficiency increases below 300 nm

  3. Characteristics of photocurrent generation in the near-ultraviolet region in Si quantum-dot sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Uchida, Giichiro, E-mail: uchida@ed.kyushu-u.ac.jp [Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395 (Japan); Sato, Muneharu; Seo, Hyunwoong [Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395 (Japan); Kamataki, Kunihiro [Faculty of Arts and Science, Kyushu University, Fukuoka 819-0395 (Japan); Itagaki, Naho [Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395 (Japan); PRESTO, Japan Science and Technology Agency, Tokyo 102-0075 (Japan); Koga, Kazunori; Shiratani, Masaharu [Graduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395 (Japan)

    2013-10-01

    We have studied photocurrent generation in Si quantum-dot (QD) sensitized solar cells, where QD thin films composed of Si nanoparticles were deposited using the double multi-hollow discharge plasma chemical vapor deposition process in an SiH{sub 4}/H{sub 2} and CH{sub 4} or N{sub 2} gas mixture. The short-circuit current density of the Si QD sensitized solar cells increases by a factor of 2.5 by using Si nanoparticles prepared by irradiation of CH{sub 4} or N{sub 2} plasma onto the Si nanoparticle surface. We have measured incident photon-to-current conversion efficiency (IPCE) in the near-ultraviolet range using quartz-glass front panels of the QD sensitized solar cells. With decreasing the wavelength of irradiation light, IPCE gradually increases upon light irradiation in a wavelength range less than about 600 nm, and then steeply increases below 300 nm, corresponding to 2.2 times the optical band-gap energy of Si QD film. - Highlights: • We have developed on Si quantum-dot sensitized solar cells using Si particles. • Current of solar cells increases by surface-termination of Si particles. • Incident photo-to-current conversion efficiency increases below 300 nm.

  4. Ideal and non-ideal MHD regimes of wire array implosion obtained in 3D hybrid simulations and observed during experiments at NTF (Nevada Terawatt Facility)

    International Nuclear Information System (INIS)

    Sotnikov, Vladimir Isaakovich; Fiala, V.; Oliver, Bryan Velten; Ivanov, Vladimir V.; LePell, Paul David; Fedin, Dmitry; Mehlhorn, Thomas Alan; Kantsyrev, Victor Leonidovich; Coverdale, Christine Anne; Travnicek, P.; Hellinger, P.; Deeney, Christopher; Jones, Brent Manley; Safronova, Alla S.; Leboeuf, J.N.; Cowan, Thomas E.

    2004-01-01

    Recent 3D hybrid simulation of a plasma current-carrying column revealed two regimes of sausage and kink instability development. In the first regime, with small Hall parameter, development of instabilities leads to appearance of large-scale axial perturbations and eventually to the bending of the plasma column. In the second regime, with five times larger Hall parameter, small-scale perturbations dominated and no bending of the plasma column was observed. Simulation results are compared to recent experimental data, including laser probing, x-ray spectroscopy and time-gated x-ray imaging during wire array implosions at NTF

  5. Aluminium K-shell radiation from 800 ns implosion time nested wire arrays. First results on the 1 MJ SPHINX generator

    International Nuclear Information System (INIS)

    Bayol, F.; Lassalle, F.; Mangeant, C.

    2005-01-01

    This paper discusses experiments to analyze the performances of plasma radiation sources for K-shell production with long implosion time increased up to 800 ns. SPHINX generator is used to implode single and nested aluminium wire arrays Z-pinches with maximum current 3.4 MA to 3.8 MA. Results show more than 10 kJ of energy radiated above 1 keV, with pulse widths of 30-50 ns for a total radiation yield around 100 kJ [ru

  6. Thin film solar modules: the low cost, high throughput and versatile alternative to Si wafers

    Energy Technology Data Exchange (ETDEWEB)

    Hegedus, S. [Delaware Univ., Inst. of Energy Conversion, Newark, DE (United States)

    2006-07-01

    Thin film solar cells (TFSC) have passed adolescence and are ready to make a substantial contribution to the world's electricity generation. They can have advantages over c-Si solar modules in ease of large area, lower cost manufacturing and in several types of applications. Factors which limit TFSC module performance relative to champion cell performance are discussed along with the importance of increased throughput and yield. The consensus of several studies is that all TFSC can achieve costs below 1 $/W if manufactured at sufficiently large scale >100 MW using parallel lines of cloned equipment with high material utilization and spray-on encapsulants. There is significant new commercial interest in TFSC from small investors and large corporations, validating the thin film approach. Unique characteristics are discussed which give TFSC an advantage over c-Si in two specific markets: small rural solar home systems and building integrated photovoltaic installations. TFSC have outperformed c-Si in annual energy production (kWhrs/kW), have demonstrated outdoor durability comparable to c-Si and are being used in MW scale installations worldwide. The merits of the thin film approach cannot be judged on the basis of efficiency alone but must also account for module performance and potential for low cost. TFSC advocates should promote their unique virtues compared to c-Si: lower cost, higher kWhr/kW output, higher battery charging current, attractive visual appearance, flexible substrates, long-term stability comparable to c-Si, and multiple pathways for deposition with room for innovation and evolutionary improvement. There is a huge market for TFSC even at today's efficiency if costs can be reduced. A brief window of opportunity exists for TFSC over the next few years due the Si shortage. The demonstrated capabilities and advantages of TFSC must be proclaimed more persistently to funding decision-makers and customers without minimizing the remaining

  7. Why did the price of solar PV Si feedstock fluctuate so wildly in 2004–2009?

    International Nuclear Information System (INIS)

    Yu Yang; Song Yuhua; Bao Haibo

    2012-01-01

    Great attention has been paid to the origin of observed wild price fluctuations of solar PV Si feedstock in both contract and spot markets during 2004–2009. This paper sheds light on this issue and tries to resolve it by addressing the following questions: what kind of structural shock is underlying the price fluctuations of PV Si feedstock? How can we quantify the magnitude, timing and relative importance of these shocks? What are their dynamic effects on the real price of PV Si feedstock? By carefully studying development conditions, the structural decomposition of the real price of PV Si feedstock is proposed: exchange rate shocks, production cost shocks, aggregate demand shocks and demand shocks specific to feedstock markets. With a Structural Vector Autoregression model, the paper quantifies and verifies the impact of structural shocks on PV Si feedstock real price changes. Based on national data, an analysis is further taken to confirm the essential role of demand shocks specific to feedstock markets in determining sharper price fluctuations during 2004–2009. The results of this study have important implications for national solar PV development, which can be better promoted and administrated if structural shocks in feedstock markets can be carefully evaluated and understood. - Highlights: ► The determination of solar PV Si feedstock price fluctuation is identified and quantified. ► Systematic structural shocks well explain 2004–2009 price fluctuations of PV Si feedstock. ► Production cost and aggregated demand shocks take longer effects on feedstock price. ► Exchange rate and feedstock specific demand shocks explain sharper price fluctuations. ► Development of national PV power should consider effects of structure shocks.

  8. Shape-dependent conversion efficiency of Si nanowire solar cells with polygonal cross-sections

    International Nuclear Information System (INIS)

    He, Yan; Yu, Wangbing; Ouyang, Gang

    2016-01-01

    A deeper insight into shape-dependent power conversion efficiency (PCE) of Si nanowire (SiNW) solar cells with polygonal cross-sectional shapes, including trigon, tetragon, hexagon, and circle, has been explored based on the atomic-bond-relaxation approach and detailed balance principle. It has been found that the surface effect induced by the loss-coordination atoms located at edges and surfaces, as well as the thermal effect, plays the dominant roles for the band shift and PCE of SiNWs due to the lattice strain occurrence at the self-equilibrium state. Our predictions are consistent with the available evidences, providing an important advance in the development of Si-based nanostructures for the desirable applications.

  9. Influence of Deposition Pressure on the Properties of Round Pyramid Textured a-Si:H Solar Cells for Maglev.

    Science.gov (United States)

    Lee, Jaehyeong; Choi, Wonseok; Lee, Kyuil; Lee, Daedong; Kang, Hyunil

    2016-05-01

    HIT (Heterojunction with Intrinsic Thin-layer) photovoltaic cells is one of the highest efficiencies in the commercial solar cells. The pyramid texturization for reducing surface reflectance of HIT solar cells silicon wafers is widely used. For the low leakage current and high shunt of solar cells, the intrinsic amorphous silicon (a-Si:H) on substrate must be uniformly thick of pyramid structure. However, it is difficult to control the thickness in the traditional pyramid texturing process. Thus, we textured the intrinsic a-Si:H thin films with the round pyramidal structure by using HNO3, HF, and CH3COOH solution. The characteristics of round pyramid a-Si:H solar cells deposited at pressure of 500, 1000, 1500, and 2000 mTorr by PECVD (Plasma Enhanced Chemical Vapor Deposition) was investigated. The lifetime, open circuit voltage, fill factor and efficiency of a-Si:H solar cells were investigated with respect to various deposition pressure.

  10. 18.4%-Efficient Heterojunction Si Solar Cells Using Optimized ITO/Top Electrode.

    Science.gov (United States)

    Kim, Namwoo; Um, Han-Don; Choi, Inwoo; Kim, Ka-Hyun; Seo, Kwanyong

    2016-05-11

    We optimize the thickness of a transparent conducting oxide (TCO) layer, and apply a microscale mesh-pattern metal electrode for high-efficiency a-Si/c-Si heterojunction solar cells. A solar cell equipped with the proposed microgrid metal electrode demonstrates a high short-circuit current density (JSC) of 40.1 mA/cm(2), and achieves a high efficiency of 18.4% with an open-circuit voltage (VOC) of 618 mV and a fill factor (FF) of 74.1% as result of the shortened carrier path length and the decreased electrode area of the microgrid metal electrode. Furthermore, by optimizing the process sequence for electrode formation, we are able to effectively restore the reduction in VOC that occurs during the microgrid metal electrode formation process. This work is expected to become a fundamental study that can effectively improve current loss in a-Si/c-Si heterojunction solar cells through the optimization of transparent and metal electrodes.

  11. Enhanced photocurrent density in graphene/Si based solar cell (GSSC) by optimizing active layer thickness

    Energy Technology Data Exchange (ETDEWEB)

    Rosikhin, Ahmad, E-mail: a.rosikhin86@yahoo.co.id; Hidayat, Aulia Fikri; Syuhada, Ibnu; Winata, Toto, E-mail: toto@fi.itb.ac.id [Department of physics, physics of electronic materials research division Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung Jl. Ganesha 10, Bandung 40132, Jawa Barat – Indonesia (Indonesia)

    2015-12-29

    Thickness dependent photocurrent density in active layer of graphene/Si based solar cell has been investigated via analytical – simulation study. This report is a preliminary comparison of experimental and analytical investigation of graphene/Si based solar cell. Graphene sheet was interfaced with Si thin film forming heterojunction solar cell that was treated as a device model for photocurrent generator. Such current can be enhanced by optimizing active layer thickness and involving metal oxide as supporting layer to shift photons absorption. In this case there are two type of devices model with and without TiO{sub 2} in which the silicon thickness varied at 20 – 100 nm. All of them have examined and also compared with each other to obtain an optimum value. From this calculation it found that generated currents almost linear with thickness but there are saturated conditions that no more enhancements will be achieved. Furthermore TiO{sub 2} layer is effectively increases photon absorption but reducing device stability, maximum current is fluctuates enough. This may caused by the disturbance of excitons diffusion and resistivity inside each layer. Finally by controlling active layer thickness, it is quite useful to estimate optimization in order to develop the next solar cell devices.

  12. Enhanced photocurrent density in graphene/Si based solar cell (GSSC) by optimizing active layer thickness

    International Nuclear Information System (INIS)

    Rosikhin, Ahmad; Hidayat, Aulia Fikri; Syuhada, Ibnu; Winata, Toto

    2015-01-01

    Thickness dependent photocurrent density in active layer of graphene/Si based solar cell has been investigated via analytical – simulation study. This report is a preliminary comparison of experimental and analytical investigation of graphene/Si based solar cell. Graphene sheet was interfaced with Si thin film forming heterojunction solar cell that was treated as a device model for photocurrent generator. Such current can be enhanced by optimizing active layer thickness and involving metal oxide as supporting layer to shift photons absorption. In this case there are two type of devices model with and without TiO 2 in which the silicon thickness varied at 20 – 100 nm. All of them have examined and also compared with each other to obtain an optimum value. From this calculation it found that generated currents almost linear with thickness but there are saturated conditions that no more enhancements will be achieved. Furthermore TiO 2 layer is effectively increases photon absorption but reducing device stability, maximum current is fluctuates enough. This may caused by the disturbance of excitons diffusion and resistivity inside each layer. Finally by controlling active layer thickness, it is quite useful to estimate optimization in order to develop the next solar cell devices

  13. Correlation between the physical parameters of the i-nc-Si absorber layer grown by 27.12 MHz plasma with the nc-Si solar cell parameters

    Science.gov (United States)

    Das, Debajyoti; Mondal, Praloy

    2017-09-01

    Growth of highly conducting nanocrystalline silicon (nc-Si) thin films of optimum crystalline volume fraction, involving dominant crystallographic preferred orientation with simultaneous low fraction of microstructures at a low substrate temperature and high growth rate, is a challenging task for its promising utilization in nc-Si solar cells. Utilizing enhanced electron density and superior ion flux densities of the high frequency (∼27.12 MHz) SiH4 plasma, improved nc-Si films have been produced by simple optimization of H2-dilution, controlling the ion damage and enhancing supply of atomic-hydrogen onto the growing surface. Single junction nc-Si p-i-n solar cells have been prepared with i-nc-Si absorber layer and optimized. The physical parameters of the absorber layer have been systematically correlated to variations of the solar cell parameters. The preferred alignment of crystallites, its contribution to the low recombination losses for conduction of charge carriers along the vertical direction, its spectroscopic correlation with the dominant growth of ultra-nanocrystalline silicon (unc-Si) component and corresponding longer wavelength absorption, especially in the neighborhood of i/n-interface region recognize scientific and technological key issues that pave the ground for imminent advancement of multi-junction silicon solar cells.

  14. Optoelectronic Evaluation and Loss Analysis of PEDOT:PSS/Si Hybrid Heterojunction Solar Cells.

    Science.gov (United States)

    Yang, Zhenhai; Fang, Zebo; Sheng, Jiang; Ling, Zhaoheng; Liu, Zhaolang; Zhu, Juye; Gao, Pingqi; Ye, Jichun

    2017-12-01

    The organic/silicon (Si) hybrid heterojunction solar cells (HHSCs) have attracted considerable attention due to their potential advantages in high efficiency and low cost. However, as a newly arisen photovoltaic device, its current efficiency is still much worse than commercially available Si solar cells. Therefore, a comprehensive and systematical optoelectronic evaluation and loss analysis on this HHSC is therefore highly necessary to fully explore its efficiency potential. Here, a thoroughly optoelectronic simulation is provided on a typical planar polymer poly (3,4-ethylenedioxy thiophene):polystyrenesulfonate (PEDOT:PSS)/Si HHSC. The calculated spectra of reflection and external quantum efficiency (EQE) match well with the experimental results in a full-wavelength range. The losses in current density, which are contributed by both optical losses (i.e., reflection, electrode shield, and parasitic absorption) and electrical recombination (i.e., the bulk and surface recombination), are predicted via carefully addressing the electromagnetic and carrier-transport processes. In addition, the effects of Si doping concentrations and rear surface recombination velocities on the device performance are fully investigated. The results drawn in this study are beneficial to the guidance of designing high-performance PEDOT:PSS/Si HHSCs.

  15. Novel Rear Side Metallization Route for Si Solar Cells Using a Transparent Conducting Adhesive: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Schnabel, Manuel [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Klein, Talysa [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Lee, Benjamin G [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Nemeth, William M [National Renewable Energy Laboratory (NREL), Golden, CO (United States); LaSalvia, Vincenzo A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Van Hest, Marinus F [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Stradins, Paul [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

    2018-03-14

    The rear side metallization of Si solar cells comes with a number of inherent losses and trade-offs: a larger metallized area fraction improves fill factor at the expense of open-circuit voltage, depositing directly on textured Si leads to low contact resistivity at the expense of short-circuit current, and some metallization processes create defects in Si. To mitigate many of these losses we have developed a novel approach for rear side metallization of Si solar cells, utilizing a transparent conducting adhesive (TCA) to metallize Si without exposing the wafer to the metal deposition process. The TCA consists of an insulating adhesive loaded with conductive microspheres. This approach leads to virtually no loss in implied open-circuit voltage upon metallization. Electrical measurements showed that contact resistivities of 3-9 ..omega.. cm2 were achieved, and an analysis of the transit resistance per microsphere showed that less than 1 ..omega.. cm2 should be achievable with higher microsphere loading of the TCA.

  16. Optimisation of electronic interface properties of a-Si:H/c-Si hetero-junction solar cells by wet-chemical surface pre-treatment

    Energy Technology Data Exchange (ETDEWEB)

    Angermann, H. [Hahn-Meitner-Institut, Abt. Siliziumphotovoltaik, Kekulestrasse 5, D-12489 Berlin (Germany)], E-mail: angermann@hmi.de; Korte, L.; Rappich, J.; Conrad, E.; Sieber, I.; Schmidt, M. [Hahn-Meitner-Institut, Abt. Siliziumphotovoltaik, Kekulestrasse 5, D-12489 Berlin (Germany); Huebener, K.; Hauschild, J. [Freie Universitaet Berlin, FB Physik, Arnimallee 14, 14195 Berlin (Germany)

    2008-08-30

    The relation between structural imperfections at structured silicon surfaces, energetic distribution of interface state densities, recombination loss at a-Si:H/c-Si interfaces and solar cell characteristics have been intensively investigated using non-destructive, surface sensitive techniques, surface photovoltage (SPV) and photoluminescence (PL) measurements, atomic force microscopy (AFM) and electron microscopy (SEM). Sequences of wet-chemical oxidation and etching steps were optimised with respect to the etching behaviour of Si(111) pyramids. Special wet-chemical smoothing and oxide removal procedures for structured substrates were developed, in order to reduce the preparation-induced surface micro-roughness and density of electronically active defects. H-termination and passivation by wet-chemical oxides were used to inhibit surface contamination and native oxidation during the technological process. We achieved significantly lower micro-roughness, densities of surface states D{sub it}(E) and recombination loss at a-Si:H/c-Si interfaces on wafers with randomly distributed pyramids, compared to conventional pre-treatments. For amorphous-crystalline hetero-junction solar cells (ZnO/a-Si:H/c-Si/BSF/Al), the c-Si surface becomes part of the a-Si:H/c-Si interface, whose recombination activity determines cell performance. With textured substrates, the smoothening procedure results in a significant increase of short circuit current, fill factor and efficiency.

  17. Optimisation of electronic interface properties of a-Si:H/c-Si hetero-junction solar cells by wet-chemical surface pre-treatment

    International Nuclear Information System (INIS)

    Angermann, H.; Korte, L.; Rappich, J.; Conrad, E.; Sieber, I.; Schmidt, M.; Huebener, K.; Hauschild, J.

    2008-01-01

    The relation between structural imperfections at structured silicon surfaces, energetic distribution of interface state densities, recombination loss at a-Si:H/c-Si interfaces and solar cell characteristics have been intensively investigated using non-destructive, surface sensitive techniques, surface photovoltage (SPV) and photoluminescence (PL) measurements, atomic force microscopy (AFM) and electron microscopy (SEM). Sequences of wet-chemical oxidation and etching steps were optimised with respect to the etching behaviour of Si(111) pyramids. Special wet-chemical smoothing and oxide removal procedures for structured substrates were developed, in order to reduce the preparation-induced surface micro-roughness and density of electronically active defects. H-termination and passivation by wet-chemical oxides were used to inhibit surface contamination and native oxidation during the technological process. We achieved significantly lower micro-roughness, densities of surface states D it (E) and recombination loss at a-Si:H/c-Si interfaces on wafers with randomly distributed pyramids, compared to conventional pre-treatments. For amorphous-crystalline hetero-junction solar cells (ZnO/a-Si:H/c-Si/BSF/Al), the c-Si surface becomes part of the a-Si:H/c-Si interface, whose recombination activity determines cell performance. With textured substrates, the smoothening procedure results in a significant increase of short circuit current, fill factor and efficiency

  18. New Regimes of Implosions of Larger Sized Wire Arrays With and Without Modified Central Plane at 1.5-1.7 MA Zebra

    Science.gov (United States)

    Safronova, A. S.; Kantsyrev, V. L.; Esaulov, A. A.; Weller, M. E.; Shrestha, I.; Shlyaptseva, V. V.; Stafford, A.; Keim, S. F.; Petkov, E. E.; Lorance, M.; Chuvatin, A. S.; Coverdale, C. A.; Jones, B.

    2013-10-01

    The recent experiments at 1.5-1.7 MA on Zebra at UNR with larger sized planar wires arrays (compared to the wire loads at 1 MA current) have demonstrated higher linear radiation yield and electron temperatures as well as advantages of better diagnostics access to observable plasma regions. Such multi-planar wire arrays had two outer wire planes from mid-Z material to create a global magnetic field (gmf) and mid-Z plasma flow between them. Also, they included a modified central plane with a few Al wires at the edges to influence gmf and to create Al plasma flow in the perpendicular direction. The stationary shock waves which existed over tens of ns on shadow images and the early x-ray emissions before the PCD peak on time-gated spectra were observed. The most recent experiments with similar loads but without the central wires demonstrated a very different regime of implosion with asymmetrical jets and no precursor formation. This work was supported by NNSA under DOE Cooperative Agreement DE-NA0001984 and in part by DE-FC52-06NA27616. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Company, for the U.S. Department of Energy's National Nuclear Security Administration under Contract DE-AC04-94AL85000.

  19. Progress in symmetric ICF capsule implosions and wire-array z-pinch source physics for double z-pinch driven hohlraums

    International Nuclear Information System (INIS)

    Bliss, David Emery; Vesey, Roger Alan; Rambo, Patrick K.; Lebedev, Sergey V.; Hanson, David L.; Nash, Thomas J.; Yu, Edmund P.; Matzen, Maurice Keith; Afeyan, Bedros B.; Smith, Ian Craig; Stygar, William A.; Porter, John Larry Jr.; Cuneo, Michael Edward; Bennett, Guy R.; Campbell, Robert B.; Sinars, Daniel Brian; Chittenden, Jeremy Paul; Waisman, Eduardo Mario; Mehlhorn, Thomas Alan

    2005-01-01

    Over the last several years, rapid progress has been made evaluating the double-z-pinch indirect-drive, inertial confinement fusion (ICF) high-yield target concept (Hammer et al 1999 Phys. Plasmas 6 2129). We have demonstrated efficient coupling of radiation from two wire-array-driven primary hohlraums to a secondary hohlraum that is large enough to drive a high yield ICF capsule. The secondary hohlraum is irradiated from two sides by z-pinches to produce low odd-mode radiation asymmetry. This double-pinch source is driven from a single electrical power feed (Cuneo et al 2002 Phys. Rev. Lett. 88 215004) on the 20 MA Z accelerator. The double z-pinch has imploded ICF capsules with even-mode radiation symmetry of 3.1 ± 1.4% and to high capsule radial convergence ratios of 14-21 (Bennett et al 2002 Phys. Rev. Lett. 89 245002; Bennett et al 2003 Phys. Plasmas 10 3717; Vesey et al 2003 Phys. Plasmas 10 1854). Advances in wire-array physics at 20 MA are improving our understanding of z-pinch power scaling with increasing drive current. Techniques for shaping the z-pinch radiation pulse necessary for low adiabat capsule compression have also been demonstrated.

  20. Solar cells based upon multicrystalline Si with DLC antireflection and passivating coatings

    International Nuclear Information System (INIS)

    Klyui, N.; Litovchenko, V.; Neselevska, L.; Kostylyov, V.; Sarikov, A.; Taraschenko, N.; Kittler, M.; Seifert, W.

    2006-01-01

    The characteristics of multicrystalline Si solar cells covered by diamond-like carbon (DLC) antireflection coatings been experimentally studied. It has been shown that this kind of coating provides a significant increase of the efficiency of solar cells mainly due to the increase of the short-circuit current density. The effects of antireflection and of the surface and bulk passivation on the SC current-voltage characteristics due to the DLC deposition have been investigated theoretically. Physical mechanisms underlying the observed effects have been proposed

  1. Solar cells based on InP/GaP/Si structure

    Science.gov (United States)

    Kvitsiani, O.; Laperashvil, D.; Laperashvili, T.; Mikelashvili, V.

    2016-10-01

    Solar cells (SCs) based on III-V semiconductors are reviewed. Presented work emphases on the Solar Cells containing Quantum Dots (QDs) for next-generation photovoltaics. In this work the method of fabrication of InP QDs on III-V semiconductors is investigated. The original method of electrochemical deposition of metals: indium (In), gallium (Ga) and of alloys (InGa) on the surface of gallium phosphide (GaP), and mechanism of formation of InP QDs on GaP surface is presented. The possibilities of application of InP/GaP/Si structure as SC are discussed, and the challenges arising is also considered.

  2. SiO2 Antireflection Coatings Fabricated by Electron-Beam Evaporation for Black Monocrystalline Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Minghua Li

    2014-01-01

    Full Text Available In this work we prepared double-layer antireflection coatings (DARC by using the SiO2/SiNx:H heterostructure design. SiO2 thin films were deposited by electron-beam evaporation on the conventional solar cell with SiNx:H single-layer antireflection coatings (SARC, while to avoid the coverage of SiO2 on the front side busbars, a steel mask was utilized as the shelter. The thickness of the SiNx:H as bottom layer was fixed at 80 nm, and the varied thicknesses of the SiO2 as top layer were 105 nm and 122 nm. The results show that the SiO2/SiNx:H DARC have a much lower reflectance and higher external quantum efficiency (EQE in short wavelengths compared with the SiNx:H SARC. A higher energy conversion efficiency of 17.80% was obtained for solar cells with SiO2 (105 nm/SiNx:H (80 nm DARC, an absolute conversion efficiency increase of 0.32% compared with the conventional single SiNx:H-coated cells.

  3. 3D-Mössbauer spectroscopic microscope for mc-Si solar cell evaluation

    Energy Technology Data Exchange (ETDEWEB)

    Ino, Y., E-mail: y-ino@ob.sist.ac.jp; Soejima, H.; Hayakawa, K.; Yukihira, K.; Tanaka, K.; Fujita, H.; Watanabe, T. [Shizuoka Institute of Science and Technology (Japan); Ogai, K.; Moriguchi, K.; Harada, Y. [APCO. Ltd. (Japan); Yoshida, Y. [Shizuoka Institute of Science and Technology (Japan)

    2016-12-15

    A 3D-Mössbauer Spectroscopic Microscope is developed to evaluate Fe impurities in multi-crystalline Si solar cells, which combines the Mössbauer spectroscopic microscope with a scanning electron microscope (SEM), an electron beam induced current (EBIC), an electron backscatter diffraction (EBSD), and an electron energy analyzer (HV-CSA). In addition, a new moving-coil-actuator with a liner encoder of 100 nm-resolution is incorporated for the operations with both a constant velocity and a constant acceleration mode successfully with the same precision as that obtained by the conventional transducers. Furthermore, a new multi-capillary X-ray lens is designed to achieve a γ-ray spot size less than 100 μm in diameter. The new microscope provides us to investigate the space correlation between Fe impurities and the lattice defects such as grain boundaries in multi-crystalline Si solar cells.

  4. Fe gettering by p+ layer in bifacial Si solar cell fabrication

    International Nuclear Information System (INIS)

    Terakawa, T.; Wang, D.; Nakashima, H.

    2006-01-01

    Gettering behaviors of Fe into solar cell grade Si are investigated by deep level transient spectroscopy. The samples contaminated with Fe in the range of the concentration of 1.5x10 12 -2.0x10 14 cm -3 were annealed at 600 deg. C to induce gettering. It is shown that the surface layer gettering behaviors of Fe for the sample without p + layer strongly depend on the Fe contamination level, in which the surface layer gettering is not effective for the sample with low level contamination 13 cm -3 but effective for the sample with middle level contamination of 1-5x10 13 cm -3 . In contrast, the samples with p + layer show effective gettering for low and middle level contaminations. The gettering mechanisms in solar cell grade Si without and with p + layer are discussed in details

  5. Broad-band anti-reflection coupler for a : Si thin-film solar cell

    International Nuclear Information System (INIS)

    Lo, S.-S.; Chen, C.-C.; Garwe, Frank; Pertch, Thomas

    2007-01-01

    This work numerically demonstrates a new anti-reflection coupler (ARC) with high coupling efficiency in a Si substrate solar cell. The ARC in which the grating is integrated on a glass encapsulation and a three-layer impedance match layer is proposed. A coupling efficiency of 90% is obtained at wavelengths between 350 and 1200 nm in the TE and TM modes when the incident angle is less than 30 0 . In comparison with a 1μm absorber layer, the integrated absorption of an a-Si thin-film solar cell without a new ARC is doubled, at long wavelengths (750 nm ≤ λ ≤ 1200 nm), as calculated by FDTD method

  6. Enhancement of Si solar cell efficiency using ZnO nanowires with various diameters

    Science.gov (United States)

    Gholizadeh, A.; Reyhani, A.; Parvin, P.; Mortazavi, S. Z.; Mehrabi, M.

    2018-01-01

    Here, Zinc Oxide nanowires are synthesized using thermal chemical vapor deposition of a Zn granulate source and used to enhance a significant Si-solar cell efficiency with simple and low cost method. The nanowires are grown in various O2 flow rates. Those affect the shape, yield, structure and the quality of ZnO nanowires according to scanning electron microscopy and x-ray diffraction analyses. This delineates that the ZnO nanostructure is dependent on the synthesis conditions. The photoluminescence spectroscopy of ZnO indicates optical emission at the Ultra-Violet and blue-green regions whose intensity varies as a function of diameter of ZnO nano-wires. The optical property of ZnO layer is measured by UV-visible and diffuse reflection spectroscopy that demonstrate high absorbance at 280-550 nm. Furthermore, the photovoltaic characterization of ZnO nanowires is investigated based on the drop casting on Si-solar cell. The ZnO nanowires with various diameters demonstrate different effects on the efficiency of Si-solar cells. We have shown that the reduction of the spectral reflectance and down-shifting process as well as the reduction of photon trapping are essential parameters on the efficiency of Si-solar cells. However, the latter is dominated here. In fact, the trapped photons during the electron-hole generation are dominant due to lessening the absorption rate in ZnO nano-wires. The results indicate that the mean diameters reduction of ZnO nanowires is also essential to improve the fill factor. The external and internal quantum efficiency analyses attest the efficiency improvement over the blue region which is related to the key parameters above.

  7. Transparent sculptured titania films for enhanced light absorption in thin-film Si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hung, Kai-Hsiang, E-mail: khhung@itri.org.tw [Green Energy and Environment Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan (China); Chiou, Guan-Di; Wong, Ming-Show [Department of Materials Science and Engineering, National Dong Hwa University, Hualien, Taiwan (China); Wang, Yu-Chih [Green Energy and Environment Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan (China); Chung, I-Shan [Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan (China)

    2011-12-30

    This study presents a description of the enhancement of light absorption in thin-film silicon (Si) solar cells by using sculptured titania (TiO{sub 2}) films. We used an electron-beam evaporation system with a glancing angle deposition (GLAD) method to deposit porous TiO{sub 2} films on fluorine-doped SnO{sub 2} (FTO) substrates. The GLAD TiO{sub 2}/FTO films were used as conductive electrodes in hydrogenated microcrystalline silicon ({mu}c-Si:H) solar cells. Transmission electron microscopy revealed that the GLAD TiO{sub 2} films are composed of sculptured nano-pillars on an FTO surface, and this nanostructure provides a synergistic route for light scattering enhancement. The GLAD TiO{sub 2}/FTO exhibited a 68% improvement of optical haze (at {lambda} = 600 nm). The {mu}c-Si:H solar cells consisting of the GLAD-nanostructured TiO{sub 2} resulted in a 5% improvement of short-circuit current (J{sub sc}) and yielded a cell efficiency of 6.6%.

  8. Characterization of the nanosized porous structure of black Si solar cells fabricated via a screen printing process

    Institute of Scientific and Technical Information of China (English)

    Tang Yehua; Fei Jianming; Cao Hongbin; Zhou Chunlan; Wang Wenjing; Zhou Su; Zhao Yan; Zhao Lei; Li Hailing; Yan Baojun; Chen Jingwei

    2012-01-01

    A silicon (Si) surface with a nanosized porous structure was formed via simple wet chemical etching catalyzed by gold (Au) nanoparticles on p-type Cz-Si (100).The average reflectivity from 300 to 1200 nm was less than 1.5%.Black Si solar cells were then fabricated using a conventional production process.The results reflected the output characteristics of the cells fabricated using different etching depths and emitter dopant profiles.Heavier dopants and shallower etching depths should be adopted to optimize the black Si solar cell output characteristics.The efficiency at the optimized etching time and dopant profile was 12.17%.However,surface passivation and electrode contact due to the nanosized porous surface structure are still obstacles to obtaining high conversion efficiency for the black Si solar cells.

  9. Core–shell-typed Ag-SiO2 nanoparticles as solar selective coating materials

    International Nuclear Information System (INIS)

    Gao, Tao; Jelle, Bjørn Petter; Gustavsen, Arild

    2013-01-01

    Silver (Ag) nanoparticles with typical diameter of about 50 nm have been prepared via a polyol process. The as-prepared Ag nanoparticles are well crystallized and exhibit a characteristic surface plasmon resonance (SPR) band centered at ∼423 nm. The SPR band shows a strong dependence on the sizes of Ag nanoparticles and the types of the dielectric medium. Core–shell-typed Ag-SiO 2 nanoparticles have also been prepared by depositing a thin layer (∼25 nm) of silica on Ag nanoparticles. The core–shell-typed Ag-SiO 2 nanoparticles show similar optical behaviors (absorption, transmission, and reflection) but enhanced stability compared to those of the Ag nanoparticles, indicating that the core–shell-typed Ag-SiO 2 nanoparticles may be used as solar selective coating materials for architectural window applications.

  10. Heterojunction Diodes and Solar Cells Fabricated by Sputtering of GaAs on Single Crystalline Si

    Directory of Open Access Journals (Sweden)

    Santiago Silvestre

    2015-04-01

    Full Text Available This work reports fabrication details of heterojunction diodes and solar cells obtained by sputter deposition of amorphous GaAs on p-doped single crystalline Si. The effects of two additional process steps were investigated: A hydrofluoric acid (HF etching treatment of the Si substrate prior to the GaAs sputter deposition and a subsequent annealing treatment of the complete layered system. A transmission electron microscopy (TEM exploration of the interface reveals the formation of a few nanometer thick SiO2 interface layer and some crystallinity degree of the GaAs layer close to the interface. It was shown that an additional HF etching treatment of the Si substrate improves the short circuit current and degrades the open circuit voltage of the solar cells. Furthermore, an additional thermal annealing step was performed on some selected samples before and after the deposition of an indium tin oxide (ITO film on top of the a-GaAs layer. It was found that the occurrence of surface related defects is reduced in case of a heat treatment performed after the deposition of the ITO layer, which also results in a reduction of the dark saturation current density and resistive losses.

  11. Broadband absorption enhancement in amorphous Si solar cells using metal gratings and surface texturing

    Science.gov (United States)

    Magdi, Sara; Swillam, Mohamed A.

    2017-02-01

    The efficiencies of thin film amorphous silicon (a-Si) solar cells are restricted by the small thickness required for efficient carrier collection. This thickness limitations result in poor light absorption. In this work, broadband absorption enhancement is theoretically achieved in a-Si solar cells by using nanostructured back electrode along with surface texturing. The back electrode is formed of Au nanogratings and the surface texturing consists of Si nanocones. The results were then compared to random texturing surfaces. Three dimensional finite difference time domain (FDTD) simulations are used to design and optimize the structure. The Au nanogratings achieved absorption enhancement in the long wavelengths due to sunlight coupling to surface plasmon polaritons (SPP) modes. High absorption enhancement was achieved at short wavelengths due to the decreased reflection and enhanced scattering inside the a-Si absorbing layer. Optimizations have been performed to obtain the optimal geometrical parameters for both the nanogratings and the periodic texturing. In addition, an enhancement factor (i.e. absorbed power in nanostructured device/absorbed power in reference device) was calculated to evaluate the enhancement obtained due to the incorporation of each nanostructure.

  12. A Generalized Theory Explains the Anomalous Suns–Voc Response of Si Heterojunction Solar Cells

    KAUST Repository

    Chavali, Raghu Vamsi Krishna

    2016-11-30

    Suns–Voc measurements exclude parasitic series resistance effects and are, therefore, frequently used to study the intrinsic potential of a given photovoltaic technology. However, when applied to a-Si/c-Si heterojunction (SHJ) solar cells, the Suns–Voc curves often feature a peculiar turnaround at high illumination intensities. Generally, this turn-around is attributed to extrinsic Schottky contacts that should disappear with process improvement. In this paper, we demonstrate that this voltage turnaround may be an intrinsic feature of SHJ solar cells, arising from the heterojunction (HJ), as well as its associated carrier-transport barriers, inherent to SHJ devices. We use numerical simulations to explore the full current–voltage (J–V) characteristics under different illumination and ambient temperature conditions. Using these characteristics, we establish the voltage and illumination-intensity bias, as well as temperature conditions necessary to observe the voltage turnaround in these cells. We validate our turnaround hypothesis using an extensive set of experiments on a high-efficiency SHJ solar cell and a molybdenum oxide (MoOx) based hole collector HJ solar cell. Our work consolidates Suns–Voc as a powerful characterization tool for extracting the cell parameters that limit efficiency in HJ devices.

  13. Zero-biased solar-blind photodetector based on ZnBeMgO/Si heterojunction

    International Nuclear Information System (INIS)

    Yang, C; Li, X M; Yu, W D; Gao, X D; Cao, X; Li, Y Z

    2009-01-01

    An n-type Zn 1-x-y Be x Mg y O thin film was deposited on a p-type Si substrate by pulsed laser deposition to obtain a solar-blind photodetector. The spectral response characteristic with a cutoff wavelength of 280 nm was demonstrated to realize the photodetection of the solar-blind wave zone. The responsivity of the device was improved by inserting an Al-doped ZnO (AZO) contact layer, which was expected to enhance the carrier collection efficiency significantly. Correspondingly, the peak responsivity was improved from 0.003 to 0.11 A W -1 at zero bias, and a high external quantum efficiency of 53% at 270 nm was achieved. The fast rise time reached 20 ns. This work demonstrated the possibility of a wurtzite ZnO based oxide system to realize high performance zero-biased solar-blind photodetectors. (fast track communication)

  14. Tandem Solar Cells Using GaAs Nanowires on Si: Design, Fabrication, and Observation of Voltage Addition.

    Science.gov (United States)

    Yao, Maoqing; Cong, Sen; Arab, Shermin; Huang, Ningfeng; Povinelli, Michelle L; Cronin, Stephen B; Dapkus, P Daniel; Zhou, Chongwu

    2015-11-11

    Multijunction solar cells provide us a viable approach to achieve efficiencies higher than the Shockley-Queisser limit. Due to their unique optical, electrical, and crystallographic features, semiconductor nanowires are good candidates to achieve monolithic integration of solar cell materials that are not lattice-matched. Here, we report the first realization of nanowire-on-Si tandem cells with the observation of voltage addition of the GaAs nanowire top cell and the Si bottom cell with an open circuit voltage of 0.956 V and an efficiency of 11.4%. Our simulation showed that the current-matching condition plays an important role in the overall efficiency. Furthermore, we characterized GaAs nanowire arrays grown on lattice-mismatched Si substrates and estimated the carrier density using photoluminescence. A low-resistance connecting junction was obtained using n(+)-GaAs/p(+)-Si heterojunction. Finally, we demonstrated tandem solar cells based on top GaAs nanowire array solar cells grown on bottom planar Si solar cells. The reported nanowire-on-Si tandem cell opens up great opportunities for high-efficiency, low-cost multijunction solar cells.

  15. Blistering in ALD Al2O3 passivation layers as rear contacting for local Al BSF Si solar cells

    NARCIS (Netherlands)

    Vermang, B.; Goverde, J.C.; Uruena, A.; Lorenz, A.; Cornagliotti, E.; Rothschild, A.; John, J.; Poortmans, J.; Mertens, R.

    2012-01-01

    Random Al back surface field (BSF) p-type Si solar cells are presented, where a stack of Al2O3 and SiNx is used as rear surface passivation layer containing blisters. It is shown that no additional contact opening step is needed, since during co-firing local Al BSFs are induced at the location of

  16. Rear-Sided Passivation by SiNx:H Dielectric Layer for Improved Si/PEDOT:PSS Hybrid Heterojunction Solar Cells.

    Science.gov (United States)

    Sun, Yiling; Gao, Pingqi; He, Jian; Zhou, Suqiong; Ying, Zhiqin; Yang, Xi; Xiang, Yong; Ye, Jichun

    2016-12-01

    Silicon/organic hybrid solar cells have recently attracted great attention because they combine the advantages of silicon (Si) and the organic cells. In this study, we added a patterned passivation layer of silicon nitride (SiNx:H) onto the rear surface of the Si substrate in a Si/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) ( PSS) hybrid solar cell, enabling an improvement of 0.6 % in the power conversion efficiency (PCE). The addition of the SiNx:H layer boosted the open circuit voltage (V oc) from 0.523 to 0.557 V, suggesting the well-passivation property of the patterned SiNx:H thin layer that was created by plasma-enhanced chemical vapor deposition and lithography processes. The passivation properties that stemmed from front PSS, rear-SiNx:H, front PSS/rear-SiNx:H, etc. are thoroughly investigated, in consideration of the process-related variations.

  17. Optimization of intrinsic layer thickness, dopant layer thickness and concentration for a-SiC/a-SiGe multilayer solar cell efficiency performance using Silvaco software

    Directory of Open Access Journals (Sweden)

    Wei Yuan Wong

    2017-01-01

    Full Text Available Solar cell is expanding as green renewable alternative to conventional fossil fuel electricity generation, but compared to other land-used electrical generators, it is a comparative beginner. Many applications covered by solar cells starting from low power mobile devices, terrestrial, satellites and many more. To date, the highest efficiency solar cell is given by GaAs based multilayer solar cell. However, this material is very expensive in fabrication and material costs compared to silicon which is cheaper due to the abundance of supply. Thus, this research is devoted to develop multilayer solar cell by combining two different layers of P-I-N structures with silicon carbide and silicon germanium. This research focused on optimising the intrinsic layer thickness, p-doped layer thickness and concentration, n-doped layer thickness and concentration in achieving the highest efficiency. As a result, both single layer a-SiC and a-SiGe showed positive efficiency improvement with the record of 27.19% and 9.07% respectively via parametric optimization. The optimized parameters is then applied on both SiC and SiGe P-I-N layers and resulted the convincing efficiency of 33.80%.

  18. Optimization of intrinsic layer thickness, dopant layer thickness and concentration for a-SiC/a-SiGe multilayer solar cell efficiency performance using Silvaco software

    Science.gov (United States)

    Yuan, Wong Wei; Natashah Norizan, Mohd; Salwani Mohamad, Ili; Jamalullail, Nurnaeimah; Hidayah Saad, Nor

    2017-11-01

    Solar cell is expanding as green renewable alternative to conventional fossil fuel electricity generation, but compared to other land-used electrical generators, it is a comparative beginner. Many applications covered by solar cells starting from low power mobile devices, terrestrial, satellites and many more. To date, the highest efficiency solar cell is given by GaAs based multilayer solar cell. However, this material is very expensive in fabrication and material costs compared to silicon which is cheaper due to the abundance of supply. Thus, this research is devoted to develop multilayer solar cell by combining two different layers of P-I-N structures with silicon carbide and silicon germanium. This research focused on optimising the intrinsic layer thickness, p-doped layer thickness and concentration, n-doped layer thickness and concentration in achieving the highest efficiency. As a result, both single layer a-SiC and a-SiGe showed positive efficiency improvement with the record of 27.19% and 9.07% respectively via parametric optimization. The optimized parameters is then applied on both SiC and SiGe P-I-N layers and resulted the convincing efficiency of 33.80%.

  19. Influence of base pressure and atmospheric contaminants on a-Si:H solar cell properties

    International Nuclear Information System (INIS)

    Woerdenweber, J.; Schmitz, R.; Mueck, A.; Zastrow, U.; Niessen, L.; Gordijn, A.; Carius, R.; Beyer, W.; Rau, U.; Merdzhanova, T.; Stiebig, H.

    2008-01-01

    The influence of atmospheric contaminants oxygen and nitrogen on the performance of thin-film hydrogenated amorphous silicon (a-Si:H) solar cells grown by plasma-enhanced chemical vapor deposition at 13.56 MHz was systematically investigated. The question is addressed as to what degree of high base pressures (up to 10 -4 Torr) are compatible with the preparation of good quality amorphous silicon based solar cells. The data show that for the intrinsic a-Si:H absorber layer exists critical oxygen and nitrogen contamination levels (about 2x10 19 atoms/cm 3 and 4x10 18 atoms/cm 3 , respectively). These levels define the minimum impurity concentration that causes a deterioration in solar cell performance. This critical concentration is found to depend little on the applied deposition regime. By enhancing, for example, the flow of process gases, a higher base pressure (and leak rate) can be tolerated before reaching the critical contamination level. The electrical properties of the corresponding films show that increasing oxygen and nitrogen contamination results in an increase in dark conductivity and photoconductivity, while activation energy and photosensitivity are decreased. These effects are attributed to nitrogen and oxygen induced donor states, which cause a shift of the Fermi level toward the conduction band and presumably deteriorate the built-in electric field in the solar cells. Higher doping efficiencies are observed for nitrogen compared to oxygen. Alloying effects (formation of SiO x ) are observed for oxygen contaminations above 10 20 atoms/cm 3 , leading to an increase in the band gap

  20. Optoelectrical modeling of solar cells based on c-Si/a-Si:H nanowire array: focus on the electrical transport in between the nanowires

    Science.gov (United States)

    Levtchenko, Alexandra; Le Gall, Sylvain; Lachaume, Raphaël; Michallon, Jérôme; Collin, Stéphane; Alvarez, José; Djebbour, Zakaria; Kleider, Jean-Paul

    2018-06-01

    By coupling optical and electrical modeling, we have investigated the photovoltaic performances of p-i-n radial nanowires array based on crystalline p-type silicon (c-Si) core/hydrogenated amorphous silicon (a-Si:H) shell. By varying either the doping concentration of the c-Si core, or back contact work function we can separate and highlight the contribution to the cell’s performance of the nanowires themselves (the radial cell) from the interspace between the nanowires (the planar cell). We show that the build-in potential (V bi) in the radial and planar cells strongly depends on the doping of c-Si core and the work function of the back contact respectively. Consequently, the solar cell’s performance is degraded if either the doping concentration of the c-Si core, or/and the work function of the back contact is too low. By inserting a thin (p) a-Si:H layer between both core/absorber and back contact/absorber, the performance of the solar cell can be improved by partly fixing the V bi at both interfaces due to strong electrostatic screening effect. Depositing such a buffer layer playing the role of an electrostatic screen for charge carriers is a suggested way of enhancing the performance of solar cells based on radial p-i-n or n-i-p nanowire array.

  1. 1- to 10-keV x-ray backlighting of annular wire arrays on the Sandia Z-machine using bent-crystal imaging techniques

    International Nuclear Information System (INIS)

    Rambo, Patrick K.; Wenger, David Franklin; Bennett, Guy R.; Sinars, Daniel Brian; Smith, Ian Craig; Porter, John Larry Jr.; Cuneo, Michael Edward; Rovang, Dean Curtis; Anderson, Jessica E.

    2003-01-01

    Annular wire array implosions on the Sandia Z-machine can produce >200 TW and 1-2 MJ of soft x rays in the 0.1-10 keV range. The x-ray flux and debris in this environment present significant challenges for radiographic diagnostics. X-ray backlighting diagnostics at 1865 and 6181 eV using spherically-bent crystals have been fielded on the Z-machine, each with a ∼0.6 eVspectral bandpass, 10 (micro)m spatial resolution, and a 4 mm by 20mm field of view. The Z-Beamlet laser, a 2-TW, 2-kJ Nd:glass laser(λ = 527 nm), is used to produce 0.1-1 J x-ray sources for radiography. The design, calibration, and performance of these diagnostics is presented.

  2. Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zeng, Xiangbin, E-mail: eexbzeng@mail.hust.edu.cn; Wen, Xixing; Sun, Xiaohu; Liao, Wugang; Wen, Yangyang

    2016-04-30

    Boron-doped zinc oxide (BZO) films were grown by metal organic chemical vapor deposition. The influence of B{sub 2}H{sub 6} flow rate and substrate temperature on the microstructure, optical, and electrical properties of BZO films was investigated by X-ray diffraction spectrum, scanning electron microscope, optical transmittance spectrum, and Hall measurements. The BZO films with optical transmittance above 85% in the visible and infrared light range, resistivity of 0.9–1.0 × 10{sup −3} Ω cm, mobility of 16.5–25.5 cm{sup 2}/Vs, and carrier concentration of 2.2–2.7 × 10{sup 20} cm{sup −3} were deposited under optimized conditions. The optimum BZO films were applied on the bifacial BZO/p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n{sup +}-type a-Si:H/BZO heterojunction solar cell as both front and back transparent electrodes. Meanwhile, the bifacial heterojunction solar cell with indium tin oxide (ITO) as both front and back transparent electrodes was fabricated. The efficiencies of 17.788% (open-circuit voltage: 0.628 V, short-circuit current density: 41.756 mA/cm{sup 2} and fill factor: 0.678) and 16.443% (open-circuit voltage: 0.590 V, short-circuit current density: 36.515 mA/cm{sup 2} and fill factor: 0.762) were obtained on the a-Si/c-Si heterojunction solar cell with BZO and ITO transparent electrodes, respectively. - Highlights: • Boron-doped zinc oxide films with low resistivity were fabricated. • The boron-doped zinc oxide films have the high transmittance. • B-doped ZnO film was applied in a-Si:H/c-Si solar cell as transparent electrodes. • The a-Si:H/c-Si solar cell with efficiency of 17.788% was obtained.

  3. Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

    International Nuclear Information System (INIS)

    Zeng, Xiangbin; Wen, Xixing; Sun, Xiaohu; Liao, Wugang; Wen, Yangyang

    2016-01-01

    Boron-doped zinc oxide (BZO) films were grown by metal organic chemical vapor deposition. The influence of B_2H_6 flow rate and substrate temperature on the microstructure, optical, and electrical properties of BZO films was investigated by X-ray diffraction spectrum, scanning electron microscope, optical transmittance spectrum, and Hall measurements. The BZO films with optical transmittance above 85% in the visible and infrared light range, resistivity of 0.9–1.0 × 10"−"3 Ω cm, mobility of 16.5–25.5 cm"2/Vs, and carrier concentration of 2.2–2.7 × 10"2"0 cm"−"3 were deposited under optimized conditions. The optimum BZO films were applied on the bifacial BZO/p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n"+-type a-Si:H/BZO heterojunction solar cell as both front and back transparent electrodes. Meanwhile, the bifacial heterojunction solar cell with indium tin oxide (ITO) as both front and back transparent electrodes was fabricated. The efficiencies of 17.788% (open-circuit voltage: 0.628 V, short-circuit current density: 41.756 mA/cm"2 and fill factor: 0.678) and 16.443% (open-circuit voltage: 0.590 V, short-circuit current density: 36.515 mA/cm"2 and fill factor: 0.762) were obtained on the a-Si/c-Si heterojunction solar cell with BZO and ITO transparent electrodes, respectively. - Highlights: • Boron-doped zinc oxide films with low resistivity were fabricated. • The boron-doped zinc oxide films have the high transmittance. • B-doped ZnO film was applied in a-Si:H/c-Si solar cell as transparent electrodes. • The a-Si:H/c-Si solar cell with efficiency of 17.788% was obtained.

  4. High-efficiency thin Si solar cells prepared at reduced temperatures. Final report; Herstellung von hocheffizienten, duennen Si-Solarzellen bei erniedrigten Prozesstemperaturen. Abschlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Kruehler, W.

    1999-07-01

    Thin crystalline Si wafer solar cells were processed at reduced temperatures. In addition multicrystalline thin-film solar cells were fabricated on graphite substrates. Large area (175 cm{sup 2}) wafer solar cells made from mono- as well as from tricrystalline Si material were processed with reduced thicknesses down to 100 {mu}m. Conversion efficiencies were obtained in the range between 11.5 and 12.5% without antireflection coating. The reduction of the process temperatures had no positive impact on the expected cost reduction because of the degradation of the electrical cell data during processing. Tricrystalline Si wafers have shown to be mechanically stronger than monocrystalline Si material. Consequently, tri-Si ingots can be sawn in thinner wafers with higher yield. The concept of backside-contacted solar cell was realized by the preparation of thin slit solar cells (150 {mu}m thin, 43 cm{sup 2} in area) made from tri-Si. A conversion efficiency of 14,3% was reached. Amorphous Si layer deposited on graphite substrates were recrystallized by the electron beam recrystallization method developed by the Technical University in Hamburg-Harburg. The recrystallized Si layers showed large grains and were suitible as seed layers for the following gas phase epitaxy (CVD). With the CVD method 20 to 40 {mu}m thin Si absorber layers were deposited on the seed layers with the same excellent crystallographic properties. In contrast, their electrical properties were not sufficient for the preparation of solar cells having more than 3% efficiency. The study of the different concepts has shown, that the development of thin wafer solar cells made from tri-Si has the highest potential with respect to a further cost reduction. (orig.) [German] Es wurden sowohl duenne, kristalline Si-Wafer-Solarzellen bei erniedrigten Prozesstemperaturen als auch multikristalline Si-Duennschicht-Solarzellen auf Graphitsubstraten entwickelt und untersucht. Es konnten grossflaechige (175 cm{sup 2

  5. Fabrication and characterization of DBM/p-Si heterojunction solar cell

    International Nuclear Information System (INIS)

    El-Nahass, M.M.; Kamel, M.A.; Atta, A.A.; Huthaily, S.Y.

    2013-01-01

    Hybrid organic/inorganic solar cell was fabricated by depositing a thin film of p-N,N dimethylaminobenzylidenemalononitrile (DBM) onto p-Si substrate. DBM is a donor–acceptor disubstituted benzenes dye known as molecular rotors and highly polar molecular compounds. Its powder has a polycrystalline structure, while nano-crystallite rods are formed in the as-deposited film. The dark current density–voltage (J–V) characteristics of Au/DBM/p-Si/Al heterojunction device measured at different temperatures ranging from 291 to 353 K have been investigated. The operating conduction mechanisms, the series and shunt resistances, the rectification ratio, the ideality factor, the effective barrier height, and the total trap concentration were determined. The capacitance–voltage (C–V) characteristics indicated that the junction is of abrupt nature. The built-in voltage and the carrier concentration distributed through the depletion region were estimated. Under illumination, the DBM/p-Si cell showed photovoltaic properties and the photovoltaic parameters were evaluated. -- Highlights: ► The molecular rotors DBM dye can be used to manufacture D/A solar cells. ► Since D/A are situated in the DBM molecule, we ensure photoinduced D → A electron transfer. ► The DBM film is grown as nano-rods. ► The most of the DBM bulk of the cell contributes to the generation of external current.

  6. Fabrication and characterization of DBM/p-Si heterojunction solar cell

    Energy Technology Data Exchange (ETDEWEB)

    El-Nahass, M.M.; Kamel, M.A. [Physics Department, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt); Atta, A.A. [Physics Department, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt); Physics Department, Faculty of Science, Taif University, Taif, 888 Taif (Saudi Arabia); Huthaily, S.Y., E-mail: s_huthaily@yahoo.com [Physics Department, Faculty of Education, Hodeidah University, Alduraihimi, 3114 Hodeidah (Yemen)

    2013-01-15

    Hybrid organic/inorganic solar cell was fabricated by depositing a thin film of p-N,N dimethylaminobenzylidenemalononitrile (DBM) onto p-Si substrate. DBM is a donor-acceptor disubstituted benzenes dye known as molecular rotors and highly polar molecular compounds. Its powder has a polycrystalline structure, while nano-crystallite rods are formed in the as-deposited film. The dark current density-voltage (J-V) characteristics of Au/DBM/p-Si/Al heterojunction device measured at different temperatures ranging from 291 to 353 K have been investigated. The operating conduction mechanisms, the series and shunt resistances, the rectification ratio, the ideality factor, the effective barrier height, and the total trap concentration were determined. The capacitance-voltage (C-V) characteristics indicated that the junction is of abrupt nature. The built-in voltage and the carrier concentration distributed through the depletion region were estimated. Under illumination, the DBM/p-Si cell showed photovoltaic properties and the photovoltaic parameters were evaluated. -- Highlights: Black-Right-Pointing-Pointer The molecular rotors DBM dye can be used to manufacture D/A solar cells. Black-Right-Pointing-Pointer Since D/A are situated in the DBM molecule, we ensure photoinduced D {yields} A electron transfer. Black-Right-Pointing-Pointer The DBM film is grown as nano-rods. Black-Right-Pointing-Pointer The most of the DBM bulk of the cell contributes to the generation of external current.

  7. Explicit analytical modeling of the low frequency a-Si:H/c-Si heterojunction capacitance: Analysis and application to silicon heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Maslova, O. [Keldysh Institute of Applied Mathematics, Russian Academy of Sciences, Miusskaya sq., 4, Moscow 125047 (Russian Federation); GeePs (Group of electrical engineering of Paris), CNRS UMR 8507, CentraleSupélec, Univ Paris-Sud, Sorbonne Universités-UPMC Univ Paris 06, 11 rue Joliot-Curie, Plateau de Moulon, F-91192 Gif-sur-Yvette Cedex (France); Brézard-Oudot, A.; Gueunier-Farret, M.-E.; Alvarez, J.; Kleider, J.-P. [GeePs (Group of electrical engineering of Paris), CNRS UMR 8507, CentraleSupélec, Univ Paris-Sud, Sorbonne Universités-UPMC Univ Paris 06, 11 rue Joliot-Curie, Plateau de Moulon, F-91192 Gif-sur-Yvette Cedex (France)

    2015-09-21

    We develop a fully analytical model in order to describe the temperature dependence of the low frequency capacitance of heterojunctions between hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si). We demonstrate that the slope of the capacitance-temperature (C-T) curve is strongly enhanced if the c-Si surface is under strong inversion conditions compared to the usually assumed depletion layer capacitance. We have extended our analytical model to integrate a very thin undoped (i) a-Si:H layer at the interface and the finite thickness of the doped a-Si:H layer that are used in high efficiency solar cells for the passivation of interface defects and to limit short circuit current losses. Finally, using our calculations, we analyze experimental data on high efficiency silicon heterojunction solar cells. The transition from the strong inversion limited behavior to the depletion layer behavior is discussed in terms of band offsets, density of states in a-Si:H, and work function of the indium tin oxide (ITO) front electrode. In particular, it is evidenced that strong inversion conditions prevail at the c-Si surface at high temperatures down to 250 K, which can only be reproduced if the ITO work function is larger than 4.7 eV.

  8. Direct Current Sputter Epitaxy of Heavily Doped p+ Layer for Monocrystalline Si Solar Cells

    Directory of Open Access Journals (Sweden)

    Wenchang Yeh

    2017-01-01

    Full Text Available Sputter epitaxy of p+ layer for fabrication of Si solar cells (SCs was demonstrated. Hall carrier concentration of p+ layer was 2.6 × 1020 cm−3 owing to cosputtering of B with Si at low temperature, which had enabled heavy and shallow p+ dope layer. p+nn+ SCs were fabricated and influence of p+ and n+ layers was investigated. Internal quantum efficiency (IQE of p+nn+ SCs was 95% at visible light and was larger than 60% at ultraviolet (UV light when the p+ layer was thinner than 30 nm. At near infrared (NIR, extra increment on IQE was achieved by rear n+ back surface field (BSF layer with a thickness thinner than 100 nm.

  9. Results of the round robin exercise on IV-measurements of classic Si-solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Van der Borg, N.J.C.M. [ECN Solar Energy, Petten (Netherlands)

    2012-12-15

    A round robin exercise was performed on IV measurements and spectral response measurements of solar cells. Seven partners participated in the exercise. The aim of the round robin was to enable the verification of their measurement facilities and procedures for IV-measurements on 'classic' Si-solar cells by comparing their measurement data with the other participants. In this way possible flaws in the equipment or procedures can be found and corrected for or the measurement uncertainties can be reassessed. The differences between the measurement results of the various partners were more or less within the expected measurement uncertainty although one or more partners may decide to use the results to reexamine their facilities or procedures.

  10. Effect of p-Layer and i-Layer Properties on the Electrical Behaviour of Advanced a-Si:H/a-SiGe:H Thin Film Solar Cell from Numerical Modeling Prospect

    Directory of Open Access Journals (Sweden)

    Peyman Jelodarian

    2012-01-01

    Full Text Available The effect of p-layer and i-layer characteristics such as thickness and doping concentration on the electrical behaviors of the a-Si:H/a-SiGe:H thin film heterostructure solar cells such as electric field, photogeneration rate, and recombination rate through the cell is investigated. Introducing Ge atoms to the Si lattice in Si-based solar cells is an effective approach in improving their characteristics. In particular, current density of the cell can be enhanced without deteriorating its open-circuit voltage. Optimization shows that for an appropriate Ge concentration, the efficiency of a-Si:H/a-SiGe solar cell is improved by about 6% compared with the traditional a-Si:H solar cell. This work presents a novel numerical evaluation and optimization of amorphous silicon double-junction (a-Si:H/a-SiGe:H thin film solar cells and focuses on optimization of a-SiGe:H midgap single-junction solar cell based on the optimization of the doping concentration of the p-layer, thicknesses of the p-layer and i-layer, and Ge content in the film. Maximum efficiency of 23.5%, with short-circuit current density of 267 A/m2 and open-circuit voltage of 1.13 V for double-junction solar cell has been achieved.

  11. Optimization of imprintable nanostructured a-Si solar cells: FDTD study.

    Science.gov (United States)

    Fisker, Christian; Pedersen, Thomas Garm

    2013-03-11

    We present a finite-difference time-domain (FDTD) study of an amorphous silicon (a-Si) thin film solar cell, with nano scale patterns on the substrate surface. The patterns, based on the geometry of anisotropically etched silicon gratings, are optimized with respect to the period and anti-reflection (AR) coating thickness for maximal absorption in the range of the solar spectrum. The structure is shown to increase the cell efficiency by 10.2% compared to a similar flat solar cell with an optimized AR coating thickness. An increased back reflection can be obtained with a 50 nm zinc oxide layer on the back reflector, which gives an additional efficiency increase, leading to a total of 14.9%. In addition, the patterned cells are shown to be up to 3.8% more efficient than an optimized textured reference cell based on the Asahi U-type glass surface. The effects of variations of the optimized solar cell structure due to the manufacturing process are investigated, and shown to be negligible for variations below ±10%.

  12. EOL performance comparison of GaAs/Ge and Si BSF/R solar arrays

    Science.gov (United States)

    Woike, Thomas J.

    1993-01-01

    EOL power estimates for solar array designs are significantly influenced by the predicted degradation due to charged particle radiation. New radiation-induced power degradation data for GaAs/Ge solar arrays applicable to missions ranging from low earth orbit (LEO) to geosynchronous earth orbit (GEO) and compares these results to silicon BSF/R arrays. These results are based on recently published radiation damage coefficients for GaAs/Ge cells. The power density ratio (GaAs/Ge to Si BSF/R) was found to be as high as 1.83 for the proton-dominated worst-case altitude of 7408 km medium Earth orbit (MEO). Based on the EOL GaAs/Ge solar array power density results for MEO, missions which were previously considered infeasible may be reviewed based on these more favorable results. The additional life afforded by using GaAs/Ge cells is an important factor in system-level trade studies when selecting a solar cell technology for a mission and needs to be considered. The data presented supports this decision since the selected orbits have characteristics similar to most orbits of interest.

  13. Evolution of a Native Oxide Layer at the a-Si:H/c-Si Interface and Its Influence on a Silicon Heterojunction Solar Cell.

    Science.gov (United States)

    Liu, Wenzhu; Meng, Fanying; Zhang, Xiaoyu; Liu, Zhengxin

    2015-12-09

    The interface microstructure of a silicon heterojunction (SHJ) solar cell was investigated. We found an ultrathin native oxide layer (NOL) with a thickness of several angstroms was formed on the crystalline silicon (c-Si) surface in a very short time (∼30 s) after being etched by HF solution. Although the NOL had a loose structure with defects that are detrimental for surface passivation, it acted as a barrier to restrain the epitaxial growth of hydrogenated amorphous silicon (a-Si:H) during the plasma-enhanced chemical vapor deposition (PECVD). The microstructure change of the NOL during the PECVD deposition of a-Si:H layers with different conditions and under different H2 plasma treatments were systemically investigated in detail. When a brief H2 plasma was applied to treat the a-Si:H layer after the PECVD deposition, interstitial oxygen and small-size SiO2 precipitates were transformed to hydrogenated amorphous silicon suboxide alloy (a-SiO(x):H, x ∼ 1.5). In the meantime, the interface defect density was reduced by about 50%, and the parameters of the SHJ solar cell were improved due to the post H2 plasma treatment.

  14. A novel strategy to increase separated electron-hole dipoles in commercial Si based solar panel to assist photovoltaic effect

    Science.gov (United States)

    Feng, Yefeng; He, Cheng-En; Xu, Zhichao; Hu, Jianbing; Peng, Cheng

    2018-01-01

    Interface induced polarization has been found to have a significant impact on dielectric properties of 2-2 type polymer composites bearing Si based semi-conducting ceramic sheets. Inherent overall polarity of polymer layers in 2-2 composites has been verified to be closely connected with interface effect and achieved permittivity in composites. In present work, conducting performances of monocrystalline Si sheets coated by varied high polarity material layers were deeply researched. The positive results inspired us to propose a novel strategy to improve separated electron-hole dipoles in commercial Si based solar cell panel for assisting photovoltaic effect, based on strong interface induced polarization. Conducting features of solar panels coated by two different high polarity polymer layers were detected to be greatly elevated compared with solar panel standalone, thanks to interface induced polarization between panel and polymer. Polymer coating with higher polarity would lead to more separated electron-hole dipole pairs in solar panel contributing to higher conductivity of panel. Valid synergy of interface effect and photovoltaic effect was based on their unidirectional traits of electron transfer. Dielectric properties of solar panels in composites further confirmed that strategy. This work might provide a facile route to prepare promising Si based solar panels with higher photoelectric conversion efficiency by enhancing interface induced polarization between panel and polymer coating.

  15. SiC formation for a solar cell passivation layer using an RF magnetron co-sputtering system

    Science.gov (United States)

    2012-01-01

    In this paper, we describe a method of amorphous silicon carbide film formation for a solar cell passivation layer. The film was deposited on p-type silicon (100) and glass substrates by an RF magnetron co-sputtering system using a Si target and a C target at a room-temperature condition. Several different SiC [Si1-xCx] film compositions were achieved by controlling the Si target power with a fixed C target power at 150 W. Then, structural, optical, and electrical properties of the Si1-xCx films were studied. The structural properties were investigated by transmission electron microscopy and secondary ion mass spectrometry. The optical properties were achieved by UV-visible spectroscopy and ellipsometry. The performance of Si1-xCx passivation was explored by carrier lifetime measurement. PMID:22221730

  16. Advanced passivation techniques for Si solar cells with high-κ dielectric materials

    International Nuclear Information System (INIS)

    Geng, Huijuan; Lin, Tingjui; Letha, Ayra Jagadhamma; Hwang, Huey-Liang; Kyznetsov, Fedor A.; Smirnova, Tamara P.; Saraev, Andrey A.; Kaichev, Vasily V.

    2014-01-01

    Electronic recombination losses at the wafer surface significantly reduce the efficiency of Si solar cells. Surface passivation using a suitable thin dielectric layer can minimize the recombination losses. Herein, advanced passivation using simple materials (Al 2 O 3 , HfO 2 ) and their compounds H (Hf) A (Al) O deposited by atomic layer deposition (ALD) was investigated. The chemical composition of Hf and Al oxide films were determined by X-ray photoelectron spectroscopy (XPS). The XPS depth profiles exhibit continuous uniform dense layers. The ALD-Al 2 O 3 film has been found to provide negative fixed charge (−6.4 × 10 11  cm −2 ), whereas HfO 2 film provides positive fixed charge (3.2 × 10 12  cm −2 ). The effective lifetimes can be improved after oxygen gas annealing for 1 min. I-V characteristics of Si solar cells with high-κ dielectric materials as passivation layers indicate that the performance is significantly improved, and ALD-HfO 2 film would provide better passivation properties than that of the ALD-Al 2 O 3 film in this research work.

  17. Al-Si alloy point contact formation and rear surface passivation for silicon solar cells using double layer porous silicon

    International Nuclear Information System (INIS)

    Moumni, Besma; Ben Jaballah, Abdelkader; Bessais, Brahim

    2012-01-01

    Lowering the rear surface recombination velocities by a dielectric layer has fascinating advantages compared with the standard fully covered Al back-contact silicon solar cells. In this work the passivation effect by double layer porous silicon (PS) (wide band gap) and the formation of Al-Si alloy in narrow p-type Si point contact areas for rear passivated solar cells are analysed. As revealed by Fourier transform infrared spectroscopy, we found that a thin passivating aluminum oxide (Al 2 O 3 ) layer is formed. Scanning electron microscopy analysis performed in cross sections shows that with bilayer PS, liquid Al penetrates into the openings, alloying with the Si substrate at depth and decreasing the contact resistivity. At the solar cell level, the reduction in the contact area and resistivity leads to a minimization of the fill factor losses.

  18. Optimizing Performance Parameters of Chemically-Derived Graphene/p-Si Heterojunction Solar Cell.

    Science.gov (United States)

    Batra, Kamal; Nayak, Sasmita; Behura, Sanjay K; Jani, Omkar

    2015-07-01

    Chemically-derived graphene have been synthesized by modified Hummers method and reduced using sodium borohydride. To explore the potential for photovoltaic applications, graphene/p-silicon (Si) heterojunction devices were fabricated using a simple and cost effective technique called spin coating. The SEM analysis shows the formation of graphene oxide (GO) flakes which become smooth after reduction. The absence of oxygen containing functional groups, as observed in FT-IR spectra, reveals the reduction of GO, i.e., reduced graphene oxide (rGO). It was further confirmed by Raman analysis, which shows slight reduction in G-band intensity with respect to D-band. Hall effect measurement confirmed n-type nature of rGO. Therefore, an effort has been made to simu- late rGO/p-Si heterojunction device by using the one-dimensional solar cell capacitance software, considering the experimentally derived parameters. The detail analysis of the effects of Si thickness, graphene thickness and temperature on the performance of the device has been presented.

  19. On the annealing-induced enhancement of the interface properties of NiO:Cu/wet-SiOx/n-Si tunnelling junction solar cells

    Science.gov (United States)

    Yang, Xueliang; Liu, Wei; Chen, Jingwei; Sun, Yun

    2018-04-01

    Using metal oxides to form a carrier-selective interface on crystalline silicon (c-Si) has recently generated considerable interest for use with c-Si photovoltaics because of the potential to reduce cost. n-type oxides, such as MoO3, V2O5, and WO3, have been widely studied. In this work, a p-type oxide, Cu-doped NiO (NiO:Cu), is explored as a transparent hole-selective contact to n-Si. An ultrathin SiOx layer, fabricated by a wet-chemical method (wet-SiOx), is introduced at the NiO:Cu/n-Si interface to achieve a tunnelling junction solar cell. Interestingly, it was observed that the interface quality of the NiO:Cu/wet-SiOx/n-Si heterojunction was dramatically enhanced by post-deposition annealing (PDA) at a temperature of 200 °C. Our device exhibits an improved power conversion efficiency of 10.8%, which is the highest efficiency among NiO/Si heterojunction photo-electric devices to date. It is demonstrated that the 200 °C PDA treatment enhances the built-in field by a reduction in the interface density of states (Dit) but does not influence the work function of the NiO:Cu thin layer. This stable work function after the PDA treatment is in conflict with the changed built-in field according to the Schottky model. Thus, the Bardeen model is introduced for this physical insight: the enhancement of the built-in field originates from the unpinning of the Fermi levels of NiO:Cu and n-Si by the interface state reduction.

  20. Dual Band a-Si:H Solar-Slot Antenna for 2.4/5.2GHz WLAN Applications

    Directory of Open Access Journals (Sweden)

    S. V. Shynu

    2009-12-01

    Full Text Available A simple and compact design of solar-slot antenna for dual band 2.4/5.2GHz wireless local area networks (WLAN applications is proposed. The design employs amorphous silicon (a-Si:H solar cells in polyimide substrate with an embedded twin strip slot structure to generate dual resonant frequencies. A T-shaped microstripline feed is used to excite the twin slot in the a-Si:H solar cell. The measured impedance bandwidths for the proposed solar antenna are 25.9% (642 MHz centered at 2.482 GHz and 8.2% (420 MHz centered at 5.098 GHz. The measured gain at 2.4 and 5.2 GHz are 3.1 dBi and 2.1 dBi respectively.

  1. Progress in N-type Si Solar Cell and Module Technology for High Efficiency and Low Cost

    Energy Technology Data Exchange (ETDEWEB)

    Song, Dengyuan; Xiong, Jingfeng; Hu, Zhiyan; Li, Gaofei; Wang, Hongfang; An, Haijiao; Yu, Bo; Grenko, Brian; Borden, Kevin; Sauer, Kenneth; Cui, Jianhua; Wang, Haitao [Yingli Green Energy Holding Co., LTD, 071051 Boading (China); Roessler, T. [Yingli Green Energy Europe GmbH, Heimeranstr. 37, 80339 Munich (Germany); Bultman, J. [ECN Solar Energy, P.O. Box 1, NL-1755 ZG Petten (Netherlands); Vlooswijk, A.H.G.; Venema, P.R. [Tempress Systems BV, Radeweg 31, 8171 Vaassen (Netherlands)

    2012-06-15

    A novel high efficiency solar cell and module technology, named PANDA, using crystalline n-type CZ Si wafers has moved into large-scale production at Yingli. The first commercial sales of the PANDA modules commenced in mid 2010. Up to 600MW of mass production capacity from crystal-Si growth, wafer slicing, cell processing and module assembly have been implemented by the end of 2011. The PANDA technology was developed specifically for high efficiency and low cost. In contrast to the existing n-type Si solar cell manufacturing methods in mass production, this new technology is largely compatible with a traditional p-type Si solar cell production line by conventional diffusion, SiNx coating and screen-printing technology. With optimizing all technologies, Yingli's PANDA solar cells on semi-square 6-inch n-type CZ wafers (cell size 239cm{sup 2}) have been improved to currently have an average efficiency on commercial production lines exceeding 19.0% and up to 20.0% in pilot production. The PANDA modules have been produced and were certified according to UL1703, IEC 61215 and IEC 61730 standards. Nearly two years of full production on scale-up lines show that the PANDA modules have a high efficiency and power density, superior high temperature performance, near zero initial light induced degradation, and excellent efficiency at low irradiance.

  2. Variation of carrier concentration and interface trap density in 8MeV electron irradiated c-Si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Bhat, Sathyanarayana, E-mail: asharao76@gmail.com; Rao, Asha, E-mail: asharao76@gmail.com [Department of Physics, Mangalore Institute of Technology and Engineering, Moodabidri, Mangalore-574225 (India); Krishnan, Sheeja [Department of Physics, Sri Devi Institute of Technology, Kenjar, Mangalore-574142 (India); Sanjeev, Ganesh [Microtron Centre, Department of Physics, Mangalore University, Mangalagangothri-574199 (India); Suresh, E. P. [Solar Panel Division, ISRO Satellite Centre, Bangalore-560017 (India)

    2014-04-24

    The capacitance and conductance measurements were carried out for c-Si solar cells, irradiated with 8 MeV electrons with doses ranging from 5kGy – 100kGy in order to investigate the anomalous degradation of the cells in the radiation harsh environments. Capacitance – Voltage measurements indicate that there is a slight reduction in the carrier concentration upon electron irradiation due to the creation of radiation induced defects. The conductance measurement results reveal that the interface state densities and the trap time constant increases with electron dose due to displacement damages in c-Si solar cells.

  3. Preparation of ZnS microdisks using chemical bath deposition and ZnS/p-Si heterojunction solar cells

    Science.gov (United States)

    Hsiao, Y. J.; Meen, T. H.; Ji, L. W.; Tsai, J. K.; Wu, Y. S.; Huang, C. J.

    2013-10-01

    The synthesis and heterojunction solar cell properties of ZnS microdisks prepared by the chemical bath deposition method were investigated. The ZnS deposited on the p-Si blanket substrate exhibits good coverage. The lower reflectance spectra were found as the thickness of the ZnS film increased. The optical absorption spectra of the 80 °C ZnS microdisk exhibited a band-gap energy of 3.4 eV and the power conversion efficiency (PCE) of the AZO/ZnS/p-Si heterojunction solar cell with a 300 nm thick ZnS film was η=2.72%.

  4. The investigation of influence of accelerated electrons on SiO2 used in silicon solar cells

    International Nuclear Information System (INIS)

    Abdullaev, G.B.; Bakirov, M.Ya; Akhmedov, G.M.; Safarov, N.A.; Safarova, F.D.

    1994-01-01

    The process of radiation defects production in enlightened SiO 2 layers coated on silicon solar cells was studied. During irradiation the silicon solar cells with enlightened layers radiation defects are formed both in silicon and SiO 2 thus making worse photo energetic parameters of cells. For investigation of radiation effects formed under irradiation by electrons with 5 MeV energy and cobalt-60 gamma-rays photoluminescence, absorption spectra and electron spin resonance methods were used. It is supposed that main radiation defects in silicon dioxide are E'-centers and oxygen vacancies. (A.D. Avezov). 10 refs.; 2 figs

  5. Calculated Resonance Line Profiles of [Mg II], [C II], and [Si IV] in the Solar Atmosphere

    Science.gov (United States)

    Avrett, E.; Landi, E.; McKillop, S.

    2013-12-01

    NASA's Interface Region Imaging Spectrograph space mission, launched 2013 June 27, is intended to study the structure of the solar chromosphere and the transition region between the chromosphere and corona. The spectral lines to be observed include the Mg II k line at 2796.5 Å, the C II 1334.5 Å line, and the Si IV line at 1393.8 Å, which are formed in the middle chromosphere, the upper chromosphere, and the lower transition region, respectively. Here we calculate the profiles of these lines from four models of the solar atmosphere, intended to represent the faint and mean internetwork, a network lane, and bright network. We show how the profiles change from the center of the solar disk toward the limb of the Sun and in response to outflows and inflows. These results are intended to cover the range of expected quiet-Sun observations and assist in their interpretation. We expect that the observations will lead to improvements in the models, which can then be used to estimate the required non-radiative heating in the different regions.

  6. Calculated resonance line profiles of [Mg II], [C II], and [Si IV] in the solar atmosphere

    International Nuclear Information System (INIS)

    Avrett, E.; McKillop, S.; Landi, E.

    2013-01-01

    NASA's Interface Region Imaging Spectrograph space mission, launched 2013 June 27, is intended to study the structure of the solar chromosphere and the transition region between the chromosphere and corona. The spectral lines to be observed include the Mg II k line at 2796.5 Å, the C II 1334.5 Å line, and the Si IV line at 1393.8 Å, which are formed in the middle chromosphere, the upper chromosphere, and the lower transition region, respectively. Here we calculate the profiles of these lines from four models of the solar atmosphere, intended to represent the faint and mean internetwork, a network lane, and bright network. We show how the profiles change from the center of the solar disk toward the limb of the Sun and in response to outflows and inflows. These results are intended to cover the range of expected quiet-Sun observations and assist in their interpretation. We expect that the observations will lead to improvements in the models, which can then be used to estimate the required non-radiative heating in the different regions.

  7. Development of n-ZnO/p-Si single heterojunction solar cell with and without interfacial layer

    Science.gov (United States)

    Hussain, Babar

    The conversion efficiency of conventional silicon (Si) photovoltaic cells has not been improved significantly during last two decades but their cost decreased dramatically during this time. However, the higher price-per-watt of solar cells is still the main bottleneck in their widespread use for power generation. Therefore, new materials need to be explored for the fabrication of solar cells potentially with lower cost and higher efficiency. The n-type zinc oxide (n-ZnO) and p-type Si (p-Si) based single heterojunction solar cell (SHJSC) is one of the several attempts to replace conventional Si single homojunction solar cell technology. There are three inadequacies in the literature related to n-ZnO/p-Si SHJSC: (1) a detailed theoretical analysis to evaluate potential of the solar cell structure, (2) inconsistencies in the reported value of open circuit voltage (VOC) of the solar cell, and (3) lower value of experimentally achieved VOC as compared to theoretical prediction based on band-bending between n-ZnO and p-Si. Furthermore, the scientific community lacks consensus on the optimum growth parameters of ZnO. In this dissertation, I present simulation and experimental results related to n-ZnO/p-Si SHJSC to fill the gaps mentioned above. Modeling and simulation of the solar cell structure are performed using PC1D and AFORS-HET software taking practical constraints into account to explore the potential of the structure. Also, unnoticed benefits of ZnO in solar cells such as an additional antireflection (AR) effect and low temperature deposition are highlighted. The growth parameters of ZnO using metal organic chemical vapor deposition and sputtering are optimized. The structural, optical, and electrical characterization of ZnO thin films grown on sapphire and Si substrates is performed. Several n-ZnO/p-Si SHJSC devices are fabricated to confirm the repeatability of the VOC. Moreover, the AR effect of ZnO while working as an n-type layer is experimentally verified

  8. Design and application of ion-implanted polySi passivating contacts for interdigitated back contact c-Si solar cells

    International Nuclear Information System (INIS)

    Yang, Guangtao; Ingenito, Andrea; Hameren, Nienke van; Isabella, Olindo; Zeman, Miro

    2016-01-01

    Ion-implanted passivating contacts based on poly-crystalline silicon (polySi) are enabled by tunneling oxide, optimized, and used to fabricate interdigitated back contact (IBC) solar cells. Both n-type (phosphorous doped) and p-type (boron doped) passivating contacts are fabricated by ion-implantation of intrinsic polySi layers deposited via low-pressure chemical vapor deposition and subsequently annealed. The impact of doping profile on the passivation quality of the polySi doped contacts is studied for both polarities. It was found that an excellent surface passivation could be obtained by confining as much as possible the implanted-and-activated dopants within the polySi layers. The doping profile in the polySi was controlled by modifying the polySi thickness, the energy and dose of ion-implantation, and the temperature and time of annealing. An implied open-circuit voltage of 721 mV for n-type and 692 mV for p-type passivating contacts was achieved. Besides the high passivating quality, the developed passivating contacts exhibit reasonable high conductivity (R sh n-type  = 95 Ω/□ and R sh p-type  = 120 Ω/□). An efficiency of 19.2% (V oc  = 673 mV, J sc  = 38.0 mA/cm 2 , FF = 75.2%, and pseudo-FF = 83.2%) was achieved on a front-textured IBC solar cell with polySi passivating contacts as both back surface field and emitter. By improving the front-side passivation, a V OC of 696 mV was also measured

  9. Numerical simulations of annular wire-array z-pinches in (x,y), (r,θ), and (r,z) geometries

    International Nuclear Information System (INIS)

    Marder, B.M.; Sanford, T.W.L.; Allshouse, G.O.

    1997-12-01

    The Total Immersion PIC (TIP) code has been used in several two-dimensional geometries to understand better the measured dynamics of annular, aluminum wire-array z-pinches. The areas investigated include the formation of the plasma sheath from current-induced individual wire explosions, the effects of wire number and symmetry on the implosion dynamics, and the dependence of the Rayleigh-Taylor instability growth on initial sheath thickness. A qualitative change in the dynamics with increasing wire number was observed, corresponding to a transition between a z-pinch composed of non-merging, self-pinching individual wires, and one characterized by the rapid formation and subsequent implosion of a continuous plasma sheath. A sharp increase in radiated power with increasing wire number has been observed experimentally near this calculated transition. Although two-dimensional codes have correctly simulated observed power pulse durations, there are indications that three dimensional effects are important in understanding the actual mechanism by which these pulse lengths are produced

  10. Positron annihilation studies of the AlOx/SiO2/Si interface in solar cell structures

    International Nuclear Information System (INIS)

    Edwardson, C. J.; Coleman, P. G.; Li, T.-T. A.; Cuevas, A.; Ruffell, S.

    2012-01-01

    Film and film/substrate interface characteristics of 30 and 60 nm-thick AlO x films grown on Si substrates by thermal atomic layer deposition (ALD), and 30 nm-thick AlO x films by sputtering, have been probed using variable-energy positron annihilation spectroscopy (VEPAS) and Doppler-broadened spectra ratio curves. All samples were found to have an interface which traps positrons, with annealing increasing this trapping response, regardless of growth method. Thermal ALD creates an AlO x /SiO x /Si interface with positron trapping and annihilation occurring in the Si side of the SiO x /Si boundary. An induced positive charge in the Si next to the interface reduces diffusion into the oxides and increases annihilation in the Si. In this region there is a divacancy-type response (20 ± 2%) before annealing which is increased to 47 ± 2% after annealing. Sputtering seems to not produce samples with this same electrostatic shielding; instead, positron trapping occurs directly in the SiO x interface in the as-deposited sample, and the positron response to it increases after annealing as an SiO 2 layer is formed. Annealing the film has the effect of lowering the film oxygen response in all film types. Compared to other structural characterization techniques, VEPAS shows larger sensitivity to differences in film preparation method and between as-deposited and annealed samples.

  11. Improving Crystalline Silicon Solar Cell Efficiency Using Graded-Refractive-Index SiON/ZnO Nanostructures

    Directory of Open Access Journals (Sweden)

    Yung-Chun Tu

    2015-01-01

    Full Text Available The fabrication of silicon oxynitride (SiON/ZnO nanotube (NT arrays and their application in improving the energy conversion efficiency (η of crystalline Si-based solar cells (SCs are reported. The SiON/ZnO NT arrays have a graded-refractive-index that varies from 3.5 (Si to 1.9~2.0 (Si3N4 and ZnO to 1.72~1.75 (SiON to 1 (air. Experimental results show that the use of 0.4 μm long ZnO NT arrays coated with a 150 nm thick SiON film increases Δη/η by 39.2% under AM 1.5 G (100 mW/cm2 illumination as compared to that of regular SCs with a Si3N4/micropyramid surface. This enhancement can be attributed to SiON/ZnO NT arrays effectively releasing surface reflection and minimizing Fresnel loss.

  12. Embedded vertical dual of silver nanoparticles for improved ZnO/Si heterojunction solar cells

    Science.gov (United States)

    Shokeen, Poonam; Jain, Amit; Kapoor, Avinashi

    2017-10-01

    A ZnO/Si heterojunction solar cell is studied with plasmonic nanoparticles embedded in the active layer. Two layers of silver nanoparticles are embedded in the ZnO layer. The effect of various parameters such as vertical-interparticle distance, horizontal-interparticle distance, relative dimensions of nanoparticles, and order of particle diameters are discussed in detail. Finite-difference time-domain studies suggest that particle dimensions of the top layer of silver nanoparticles should be less than the dimensions of the underneath layer of silver nanoparticles. The resulting structure acquires the benefits of each layer and improves the device performance over a broad spectrum. The dielectric separation of plasmonic layers is observed to be an important factor in favorable plasmonic response. Electric field diagrams are used to study the scattering of an incident field by proposed structure. Results are encouraging and suggest more concerted studies of multilayer plasmonic structures.

  13. Atomic-layer deposited Nb2O5 as transparent passivating electron contact for c-Si solar cells

    NARCIS (Netherlands)

    Macco, Bart; Black, Lachlan E.; Melskens, Jimmy; van de Loo, Bas W.H.; Berghuis, Willem Jan H.; Verheijen, Marcel A.; Kessels, Wilhelmus M.M.

    2018-01-01

    Passivating contacts based on metal oxides have proven to enable high energy conversion efficiencies for crystalline silicon (c-Si) solar cells at low processing complexity. In this work, the potential of atomic-layer deposited (ALD) Nb2O5 as novel electron-selective passivating contact is explored

  14. Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layer

    Directory of Open Access Journals (Sweden)

    Chao-Chun Wang

    2012-01-01

    Full Text Available The nanocrystalline silicon-germanium (nc-SiGe thin films were deposited by high-frequency (27.12 MHz plasma-enhanced chemical vapor deposition (HF-PECVD. The films were used in a silicon-based thin film solar cell with graded-dead absorption layer. The characterization of the nc-SiGe films are analyzed by scanning electron microscopy, UV-visible spectroscopy, and Fourier transform infrared absorption spectroscopy. The band gap of SiGe alloy can be adjusted between 0.8 and 1.7 eV by varying the gas ratio. For thin film solar cell application, using double graded-dead i-SiGe layers mainly leads to an increase in short-circuit current and therefore cell conversion efficiency. An initial conversion efficiency of 5.06% and the stabilized efficiency of 4.63% for an nc-SiGe solar cell were achieved.

  15. The effect of oxidation time on the parameters of ITO/Si solar cell prepared by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Kandil, S. A; Afifi, H. H; El-hefnawi, S. H; Eliwa, A.Y [Electronic Research Institute, Dokki, Cairo (Egypt)

    2000-07-01

    The indium tin oxide (ITO/N-Si) solar cells have been fabricated by spray pyrolysis technique. The silicon wafers are heated at 500 Celsius degrees with different oxidation time (2-20 min). The best values obtained for ITO/Si solar cell output parameters; open circuit voltage V{sub o}c, short circuit current density J{sub s}c, fill factor FF and efficiency {eta} are 0.48 V, 15 mA/cm{sup 2}, 0.7 and 10.1% respectively. The preceding results were obtained under conditions of 5 minutes oxidation time and the surface area equal to 8 mm{sup 2} when the light intensity is 50 MW/ cm{sup 2}. The values of V{sub o}c, J{sub s}c, FF and {eta} are affected strongly by the varying the oxidation time. This paper is devoted to explain the effect of the interfacial layer SiO{sub 2} thickness on the ITO/Si solar cell parameters as deduced from the I-V and C-V measurements. [Spanish] Mediante tecnicas de pirolisis de dispersion se han fabricado celdas solares de oxido de Indio estanado ITO/N-Si. Las obleas de silicon se calientan a 500 con diferentes tiempos de oxidacion (2-20 min.) Los mejores valores obtenidos para los parametros de produccion de las celdas solares ITO-Si de voltaje en circuito abierto V{sub o}c densidad de corriente de corto circuito J{sub s}c factor de llenado FF y eficiencia {eta} son de 0.48 V, 15 mA/cm{sup 2}, 0.7% y 10.1% respectivamente los resultados precedentes se obtuvieron bajo condiciones de 5 minutos de tiempo de oxidacion y la superficie del area=8 mm{sup 2} cuando la intensidad de la luz es de 50mW/Cm{sup 2}. Los valores de V{sub o}c, J{sub s}c, FF y {eta} se afectan fuertemente por la variacion del tiempo de oxidacion. Este articulo esta dedicado a explicar el efecto del espesor de la capa interfacial de SiO{sub 2} en los parametros de la celda solar ITO-Si como se deduce de las mediciones I-V y C-V.

  16. A Si IV/O IV Electron Density Diagnostic for the Analysis of IRIS Solar Spectra

    Science.gov (United States)

    Young, P. R.; Keenan, F. P.; Milligan, R. O.; Peter, H.

    2018-04-01

    Solar spectra of ultraviolet bursts and flare ribbons from the Interface Region Imaging Spectrograph (IRIS) have suggested high electron densities of > {10}12 cm‑3 at transition region temperatures of 0.1 MK, based on large intensity ratios of Si IV λ1402.77 to O IV λ1401.16. In this work, a rare observation of the weak O IV λ1343.51 line is reported from an X-class flare that peaked at 21:41 UT on 2014 October 24. This line is used to develop a theoretical prediction of the Si IV λ1402.77 to O IV λ1401.16 ratio as a function of density that is recommended to be used in the high-density regime. The method makes use of new pressure-dependent ionization fractions that take account of the suppression of dielectronic recombination at high densities. It is applied to two sequences of flare kernel observations from the October 24 flare. The first shows densities that vary between 3× {10}12 and 3× {10}13 cm‑3 over a seven-minute period, while the second location shows stable density values of around 2× {10}12 cm‑3 over a three-minute period.

  17. Formation of BaSi2 heterojunction solar cells using transparent MoOx hole transport layers

    Science.gov (United States)

    Du, W.; Takabe, R.; Baba, M.; Takeuchi, H.; Hara, K. O.; Toko, K.; Usami, N.; Suemasu, T.

    2015-03-01

    Heterojunction solar cells that consist of 15 nm thick molybdenum trioxide (MoOx, x < 3) as a hole transport layer and 600 nm thick unpassivated or passivated n-BaSi2 layers were demonstrated. Rectifying current-voltage characteristics were observed when the surface of BaSi2 was exposed to air. When the exposure time was decreased to 1 min, an open circuit voltage of 200 mV and a short circuit current density of 0.5 mA/cm2 were obtained under AM1.5 illumination. The photocurrent density under a reverse bias voltage of -1 V reached 25 mA/cm2, which demonstrates the significant potential of BaSi2 for solar cell applications.

  18. Optical analysis of a III-V-nanowire-array-on-Si dual junction solar cell.

    Science.gov (United States)

    Chen, Yang; Höhn, Oliver; Tucher, Nico; Pistol, Mats-Erik; Anttu, Nicklas

    2017-08-07

    A tandem solar cell consisting of a III-V nanowire subcell on top of a planar Si subcell is a promising candidate for next generation photovoltaics due to the potential for high efficiency. However, for success with such applications, the geometry of the system must be optimized for absorption of sunlight. Here, we consider this absorption through optics modeling. Similarly, as for a bulk dual-junction tandem system on a silicon bottom cell, a bandgap of approximately 1.7 eV is optimum for the nanowire top cell. First, we consider a simplified system of bare, uncoated III-V nanowires on the silicon substrate and optimize the absorption in the nanowires. We find that an optimum absorption in 2000 nm long nanowires is reached for a dense array of approximately 15 nanowires per square micrometer. However, when we coat such an array with a conformal indium tin oxide (ITO) top contact layer, a substantial absorption loss occurs in the ITO. This ITO could absorb 37% of the low energy photons intended for the silicon subcell. By moving to a design with a 50 nm thick, planarized ITO top layer, we can reduce this ITO absorption to 5%. However, such a planarized design introduces additional reflection losses. We show that these reflection losses can be reduced with a 100 nm thick SiO 2 anti-reflection coating on top of the ITO layer. When we at the same time include a Si 3 N 4 layer with a thickness of 90 nm on the silicon surface between the nanowires, we can reduce the average reflection loss of the silicon cell from 17% to 4%. Finally, we show that different approximate models for the absorption in the silicon substrate can lead to a 15% variation in the estimated photocurrent density in the silicon subcell.

  19. Efficiency improvements by Metal Wrap Through technology for n-type Si solar cells and modules

    Energy Technology Data Exchange (ETDEWEB)

    Wenchao, Zhao; Jianming, Wang; Yanlong, Shen; Ziqian, Wang; Yingle, Chen; Shuquan, Tian; Zhiliang, Wan; Bo, Yu; Gaofei, Li; Zhiyan, Hu; Jingfeng, Xiong [Yingli Green Energy Holding Co., Ltd, 3399 North Chaoyang Avenue, Baoding (China); Guillevin, N.; Heurtault, B.; Aken, B.B. van; Bennett, I.J.; Geerligs, L.J.; Weeber, A.W.; Bultman, J.H. [ECN Solar Energy, Petten (Netherlands)

    2012-09-15

    N-type Metal Wrap Through (n-MWT) is presented as an industrially promising back-contact technology to reach high performance of silicon solar cells and modules. It can combine benefits from both n-type base and MWT metallization. In this paper, the efficiency improvements of commercial industrial n-type bifacial Si solar cells (239 cm{sup 2}) and modules (60 cells) by the integration of the MWT technique are described. For the cell, after the optimization of integration, over 0.3% absolute efficiency gain was achieved over the similar non-MWT technology, and Voc gain and Isc gain up to 0.9% and 3.5%, respectively. These gains are mainly attributed to reduced shading loss and surface recombination. Besides the front pattern optimization, a 0.1m{Omega} reduction of Rs in via part will induce further 0.06% absolute efficiency improvement. For the module part, a power output of n-MWT module up to 279W was achieved, corresponding to a module efficiency of about 17.7%.

  20. Performance Improvements of Selective Emitters by Laser Openings on Large-Area Multicrystalline Si Solar Cells

    Directory of Open Access Journals (Sweden)

    Sheng-Shih Wang

    2014-01-01

    Full Text Available This study focuses on the laser opening technique used to form a selective emitter (SE structure on multicrystalline silicon (mc-Si. This technique can be used in the large-area (156 × 156 mm2 solar cells. SE process of this investigation was performed using 3 samples SE1–SE3. Laser fluences can vary in range of 2–5 J/cm2. The optimal conversion efficiency of 15.95% is obtained with the SE3 (2 J/cm2 fluence after laser opening with optimization of heavy and light dopant, which yields a gain of 0.48%abs compared with that of a reference cell (without fluence. In addition, this optimal SE3 cell displays improved characteristics compared with other cells with a higher average value of external quantum efficiency (EQEavg = 68.6% and a lower average value of power loss (Ploss = 2.33 mW/cm2. For the fabrication of solar cells, the laser opening process comprises fewer steps than traditional photolithography does. Furthermore, the laser opening process decreases consumption of chemical materials; therefore, the laser opening process decreases both time and cost. Therefore, SE process is simple, cheap, and suitable for commercialization. Moreover, the prominent features of the process render it effective means to promote overall performance in the photovoltaic industry.

  1. Analysis of radiation damage to Si solar cells under high-fluence electron irradiation

    International Nuclear Information System (INIS)

    Yamaguchi, Masafumi; Taylor, S.J.; Yang, Ming-Ju; Matsuda, Sumio; Kawasaki, Osamu; Hisamatsu, Tadashi.

    1996-01-01

    Radiation testing of Si n + -p-p + space solar cells has revealed an anomalous increase in short-circuit current I sc , followed by an abrupt decrease and cell failure, induced by high-fluence (>10 16 cm -2 ) electron irradiation. A model which can be used to explain these phenomena by expressing the change in majority-carrier concentration p of the base region as a function of the electron fluence has been proposed in addition to the well-known model in which I sc is decreased due to minority-carrier lifetime reduction with irradiation. The reduction in p due to majority-carrier trapping by radiation-induced defects has two effects; one is broadening of the depletion layer which contributes to the increase in the generated photocurrent and that in the recombination-generation current in the depletion layer, and the second is an increase in the resistivity of the base layer resulting in an abrupt decrease of I sc and failure of the solar cells. (author)

  2. Nanoimprinted backside reflectors for a-Si:H thin-film solar cells: critical role of absorber front textures.

    Science.gov (United States)

    Tsao, Yao-Chung; Fisker, Christian; Pedersen, Thomas Garm

    2014-05-05

    The development of optimal backside reflectors (BSRs) is crucial for future low cost and high efficiency silicon (Si) thin-film solar cells. In this work, nanostructured polymer substrates with aluminum coatings intended as BSRs were produced by positive and negative nanoimprint lithography (NIL) techniques, and hydrogenated amorphous silicon (a-Si:H) was deposited hereon as absorbing layers. The relationship between optical properties and geometry of front textures was studied by combining experimental reflectance spectra and theoretical simulations. It was found that a significant height variation on front textures plays a critical role for light-trapping enhancement in solar cell applications. As a part of sample preparation, a transfer NIL process was developed to overcome the problem of low heat deflection temperature of polymer substrates during solar cell fabrication.

  3. Further insight on recombination losses in the intrinsic layer of a-Si:H solar cells using computer modeling tools

    Science.gov (United States)

    Rubinelli, Francisco A.; Ramirez, Helena; Ruiz, Carlos M.; Schmidt, Javier A.

    2017-05-01

    Recombination losses of a-Si:H based p-i-n solar cells in the annealed state are analyzed with device computer modeling. Under AM1.5 illumination, the recombination rate in the intrinsic layer is shown to be controlled by a combination of losses through defect and tail states. The influence of the defect concentration on the characteristic parameters of a solar cell is analyzed. The impact on the light current-voltage characteristic curve of adopting very low free carrier mobilities and a high density of states at the band edge is explored under red and AM1.5 illumination. The distribution of trapped charge, electric field, and recombination loses inside the intrinsic layer is examined, and their influence on the solar cell performance is discussed. Solar cells with intrinsic layers deposited with and without hydrogen dilution are examined. It is found that the photocurrent at -2 V is not always a good approximation of the saturated reverse-bias photocurrent in a-Si:H p-i-n solar cells at room temperature. The importance of using realistic electrical parameters in solar cell simulations is emphasized.

  4. Diagnosing x-ray power and energy of tungsten wire array z-pinch with a flat spectral response x-ray diode

    International Nuclear Information System (INIS)

    Wang, Kun-lun; Ren, Xiao-dong; Huang, Xian-bin; Zhang, Si-qun; Zhou, Shao-tong; Dan, Jia-kun; Li, Jing; Xu, Qiang; Ouyang, Kai; Cai, Hong-chun; Wei, Bing; Ji, Ce; Feng, Shu-ping; Wang, Meng; Xie, Wei-ping; Deng, Jian-jun

    2015-01-01

    Fast z-pinch is a very efficient way of converting electromagnetic energy to radiation. With an 8-10 MA current on primary test stand facility, about 1 MJ electromagnetic energy is delivered to vacuum chamber, which heats z-pinch plasma to radiate soft x-ray. To develop a pulsed high power x-ray source, we studied the applicability of diagnosing x-ray power from tungsten wire array z-pinch with a flat spectral response x-ray diode (FSR-XRD). The detector was originally developed to diagnose radiation of a hohlraum in SG-III prototype laser facility. It utilized a gold cathode XRD and a specially configured compound gold filter to yield a nearly flat spectral response in photon energy range of 0.1-4 keV. In practice, it was critical to avoid surface contamination of gold cathode. It is illustrated that an exposure of an XRD to multiple shots caused a significant change of response. Thus, in diagnosing x-ray power and energy, we used each XRD in only one shot after calibration. In a shot serial, output of FSR-XRD was compared with output of a nickel bolometer. In these shots, the outputs agreed with each other within their uncertainties which were about 12% for FSR-XRD and about 15% for bolometer. Moreover, the ratios between the FSR-XRD and the bolometer among different shots were explored. In 8 shots, the standard deviation of the ratio was 6%. It is comparable to XRD response change of 7%

  5. Effect of the CO2/SiH4 Ratio in the p-μc-SiO:H Emitter Layer on the Performance of Crystalline Silicon Heterojunction Solar Cells

    Directory of Open Access Journals (Sweden)

    Jaran Sritharathikhun

    2014-01-01

    Full Text Available This paper reports the preparation of wide gap p-type hydrogenated microcrystalline silicon oxide (p-μc-SiO:H films using a 40 MHz very high frequency plasma enhanced chemical vapor deposition technique. The reported work focused on the effects of the CO2/SiH4 ratio on the properties of p-μc-SiO:H films and the effectiveness of the films as an emitter layer of crystalline silicon heterojunction (c-Si-HJ solar cells. A p-μc-SiO:H film with a wide optical band gap (E04, 2.1 eV, can be obtained by increasing the CO2/SiH4 ratio; however, the tradeoff between E04 and dark conductivity must be considered. The CO2/SiH4 ratio of the p-μc-SiO:H emitter layer also significantly affects the performance of the solar cells. Compared to the cell using p-μc-Si:H (CO2/SiH4 = 0, the cell with the p-μc-SiO:H emitter layer performs more efficiently. We have achieved the highest efficiency of 18.3% with an open-circuit voltage (Voc of 692 mV from the cell using the p-μc-SiO:H layer. The enhancement in the Voc and the efficiency of the solar cells verified the potential of the p-μc-SiO:H films for use as the emitter layer in c-Si-HJ solar cells.

  6. P-type poly-Si prepared by low-temperature aluminum-induced crystallization and doping for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Matsumoto, Yasuhiro; Yu, Zhenrui; Morales-Acevedo, Arturo [CINVESTAV-IPN, Mexico, D.F. (Mexico)

    2000-07-01

    P-type poly-Si thin films prepared by low temperature aluminum-induced crystallization and doping are reported. The starting material was boron-doped a-Si:H prepared by PECVD on glass substrates. Aluminum layers with different thickness were evaporated on a-Si:H surface and conventional thermal annealing was performed at temperatures ranging from 300 to 550 Celsius degrees. XRD, SIMS, and Hall effect measurements were carried out to characterize the annealed Al could be crystallized at temperature as low as 300 Celsius degrees in 60 minutes. This material has high carrier concentration as well as high Hall mobility and can be used as a p-layer of seed layer for thin film poly-Si solar cells. The technique reported here is compatible with PECVD process. [Spanish] Se informa sobre la preparacion de peliculas delgadas tipo P y Poli-Si mediante la cristalizacion inducida de aluminio a baja temperatura y el dopado. El material inicial era de boro dopado y a-Si:H preparado PECVD sobre substratos de vidrio. Se evaporaron capas de aluminio de diferente espesor sobre una superficie de a-Si:H y se llevo a cabo un destemplado termico convencional a temperaturas que varian entre 300 y 500 grados Celsius. Se llevaron a cabo mediciones de XRB, SIMS y del efecto Hall para caracterizar el aluminio destemplado para que pudiera ser cristalizado a temperaturas tan bajas como 300 grados Celsius en 60 minutos. Este material tiene una alta concentracion portadora asi como una alta movilidad Hall y puede usarse como una capa de semilla para celdas solares de pelicula delgada Poli-Si. La tecnica reportada aqui es compatible con el proceso PECVD.

  7. Concurrent improvement in optical and electrical characteristics by using inverted pyramidal array structures toward efficient Si heterojunction solar cells

    KAUST Repository

    Wang, Hsin Ping

    2016-03-02

    The Si heterojunction (SHJ) solar cell is presently the most popular design in the crystalline Si (c-Si) photovoltaics due to the high open-circuit voltages (V). Photon management by surface structuring techniques to control the light entering the devices is critical for boosting cell efficiency although it usually comes with the V loss caused by severe surface recombination. For the first time, the periodic inverted pyramid (IP) structure fabricated by photolithography and anisotropic etching processes was employed for SHJ solar cells, demonstrating concurrent improvement in optical and electrical characteristics (i.e., short-circuit current density (J) and V). Periodic IP structures show superior light-harvesting properties as most of the incident rays bounce three times on the walls of the IPs but only twice between conventional random upright pyramids (UPs). The high minority carrier lifetime of the IP structures after a-Si:H passivation results in an enhanced V by 28 mV, showing improved carrier collection efficiency due to the superior passivation of the IP structure over the random UP structures. The superior antireflective (AR) ability and passivation results demonstrate that the IP structure has the potential to replace conventional UP structures to further boost the efficiency in solar cell applications.

  8. a-Si:H/μc-Si:H solar cells prepared by the single-chamber processes—minimization of phosphorus and boron cross contamination

    Energy Technology Data Exchange (ETDEWEB)

    Merdzhanova, Tsvetelina, E-mail: t.merdzhanova@fz-juelich.de; Zimmermann, Thomas; Zastrow, Uwe; Gordijn, Aad; Beyer, Wolfhard

    2013-07-01

    Single-chamber processes for the deposition of high efficiency thin-film silicon tandem cells of an a-Si:H p-i-n (top cell)/μc-Si:H p-i-n (bottom cell) structure involving short fabrication time are reported. An industry relevant reactor and an excitation frequency of 13.56 MHz were used. The conversion efficiency is found to be highly sensitive to dopant cross contamination into the μc-Si:H i-layer of the bottom cell and within the n/p-interface of the tunnel recombination junction (TRJ). Different reactor treatments at the p/i-interfaces of the top and bottom cells and at the n/p-interface of the TRJ were applied, aiming to prevent dopant cross contamination. The phosphorus and the boron concentrations were evaluated by secondary ion mass spectrometry measurements. Phosphorus cross contamination after TRJ n-layer deposition is found to result in significant n-type doping of the μc-Si:H i-layer of the bottom cell if no reactor treatment is applied. In situ reactor treatment via an Ar flush and pumping step of 15 min applied at the n/p-interface of TRJ results in reduction of the μc-Si:H i-layer phosphorus concentration to values below 10{sup 17} cm{sup −3}. A conversion efficiency of 11.8% for such tandem cells is demonstrated. Shorter interface treatment time with phosphorus concentrations in the μc-Si:H i-layer of about 5 × 10{sup 17} cm{sup −3} results in lower conversion efficiencies of 10.6%, mainly due to the decrease of open-circuit voltage and fill factor. - Highlights: • Single-chamber process for a-Si:H/μc-Si:H solar cell is developed. • P- and B-contaminations at n/p interface and μc-Si:H i-layer are quantified by SIMS. • Reactor treatment is required at n/p interface for minimum dopant cross contamination. • Ar-flush pumping of reactor reduces P concentration in μc-Si:H i-layer to 10{sup 17} cm{sup −3}{sub .} • Conversion efficiency of 11.4% is reached at reactor treatment time of 17 min.

  9. Impedance spectroscopy of heterojunction solar cell a-SiC/c-Si with ITO antireflection film investigated at different temperatures

    International Nuclear Information System (INIS)

    Šály, V; Pern, M; Janíček, F; Mikolášek, M; Packa, J; Huran, J

    2017-01-01

    Progressive smart photovoltaic technologies including heterostructures a-SiC/c-Si with ITO antireflection film are one of the prospective replacements of conventional photovoltaic silicon technology. Our paper is focused on the investigation of heterostructures a-SiC/c-Si provided with a layer of ITO (indium oxide/tin oxide 90/10 wt.%) which acts as a passivating and antireflection coating. Prepared photovoltaic cell structure was investigated at various temperatures and the influence of temperature on its operation was searched. The investigation of the dynamic properties of heterojunction PV cells was carried out using impedance spectroscopy. The equivalent AC circuit which approximates the measured impedance data was proposed. Assessment of the influence of the temperature on the operation of prepared heterostructure was carried out by analysis of the temperature dependence of AC equivalent circuit elements. (paper)

  10. Impedance spectroscopy of heterojunction solar cell a-SiC/c-Si with ITO antireflection film investigated at different temperatures

    Science.gov (United States)

    Šály, V.; Perný, M.; Janíček, F.; Huran, J.; Mikolášek, M.; Packa, J.

    2017-04-01

    Progressive smart photovoltaic technologies including heterostructures a-SiC/c-Si with ITO antireflection film are one of the prospective replacements of conventional photovoltaic silicon technology. Our paper is focused on the investigation of heterostructures a-SiC/c-Si provided with a layer of ITO (indium oxide/tin oxide 90/10 wt.%) which acts as a passivating and antireflection coating. Prepared photovoltaic cell structure was investigated at various temperatures and the influence of temperature on its operation was searched. The investigation of the dynamic properties of heterojunction PV cells was carried out using impedance spectroscopy. The equivalent AC circuit which approximates the measured impedance data was proposed. Assessment of the influence of the temperature on the operation of prepared heterostructure was carried out by analysis of the temperature dependence of AC equivalent circuit elements.

  11. Analytical solution for haze values of aluminium-induced texture (AIT) glass superstrates for a-Si:H solar cells.

    Science.gov (United States)

    Sahraei, Nasim; Forberich, Karen; Venkataraj, Selvaraj; Aberle, Armin G; Peters, Marius

    2014-01-13

    Light scattering at randomly textured interfaces is essential to improve the absorption of thin-film silicon solar cells. Aluminium-induced texture (AIT) glass provides suitable scattering for amorphous silicon (a-Si:H) solar cells. The scattering properties of textured surfaces are usually characterised by two properties: the angularly resolved intensity distribution and the haze. However, we find that the commonly used haze equations cannot accurately describe the experimentally observed spectral dependence of the haze of AIT glass. This is particularly the case for surface morphologies with a large rms roughness and small lateral feature sizes. In this paper we present an improved method for haze calculation, based on the power spectral density (PSD) function of the randomly textured surface. To better reproduce the measured haze characteristics, we suggest two improvements: i) inclusion of the average lateral feature size of the textured surface into the haze calculation, and ii) considering the opening angle of the haze measurement. We show that with these two improvements an accurate prediction of the haze of AIT glass is possible. Furthermore, we use the new equation to define optimum morphology parameters for AIT glass to be used for a-Si:H solar cell applications. The autocorrelation length is identified as the critical parameter. For the investigated a-Si:H solar cells, the optimum autocorrelation length is shown to be 320 nm.

  12. Enhanced absorption in Au nanoparticles/a-Si:H/c-Si heterojunction solar cells exploiting Au surface plasmon resonance

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, Maria; Giangregorio, Maria M.; Bianco, Giuseppe V.; Sacchetti, Alberto; Capezzuto, Pio; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy)

    2009-10-15

    Au nanoparticles (NPs)/(n-type)a-Si:H/(p-type)c-Si heterojunctions have been deposited combining plasma-enhanced chemical-vapour deposition (PECVD) with Au sputtering. We demonstrate that a density of {proportional_to}1.3 x 10{sup 11} cm{sup -2} of Au nanoparticles with an approximately 20 nm diameter deposited onto (n-type)a-Si:H/(p-type)c-Si heterojunctions enhance performance exploiting the improved absorption of light by the surface plasmon resonance of Au NPs. In particular, Au NPs/(n-type)a-Si:H/(p-type)c-Si show an enhancement of 20% in the short-circuit current, J{sub SC}, 25% in the power output, P{sub max} and 3% in the fill factor, FF, compared to heterojunctions without Au NPs. Structures have been characterized by spectroscopic ellipsometry, atomic force microscopy and current-voltage (I-V) measurements to correlate the plasmon resonance-induced enhanced absorption of light with photovoltaic performance. (author)

  13. Ultrathin SiO{sub 2} layer formed by the nitric acid oxidation of Si (NAOS) method to improve the thermal-SiO{sub 2}/Si interface for crystalline Si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Matsumoto, Taketoshi; Nakajima, Hiroki; Irishika, Daichi; Nonaka, Takaaki; Imamura, Kentaro; Kobayashi, Hikaru, E-mail: h.kobayashi@sanken.osaka-u.ac.jp

    2017-02-15

    Highlights: • The density of interface states at the SiO{sub 2}/Si interface is decreased by NAOS. • The minority carrier lifetime is increased by the NAOS treatment. • Great interfacial properties of the NAOS layer are kept after thermal oxidation. - Abstract: A combination of the nitric acid oxidation of Si (NAOS) method and post-thermal oxidation is found to efficiently passivate the SiO{sub 2}/n-Si(100) interface. Thermal oxidation at 925 °C and annealing at 450 °C in pure hydrogen atmosphere increases the minority carrier lifetime by three orders of magnitude, and it is attributed to elimination of Si dangling bond interface states. Fabrication of an ultrathin, i.e., 1.1 nm, NAOS SiO{sub 2} layer before thermal oxidation and H{sub 2} annealing further increases the minority carrier lifetime by 30% from 8.6 to 11.1 ms, and decreased the interface state density by 10% from 6.9 × 10{sup 9} to 6.3 × 10{sup 9}eV{sup −1} cm{sup −2}. After thermal oxidation at 800 °C, the SiO{sub 2} layer on the NAOS-SiO{sub 2}/Si(100) structure is 2.26 nm thick, i.e., 0.24 nm thicker than that on the Si(100) surface, while after thermal oxidation at 925 °C, it is 4.2 nm thick, i.e., 0.4 nm thinner than that on Si(100). The chemical stability results from the higher atomic density of a NAOS SiO{sub 2} layer than that of a thermal oxide layer as reported in Ref. [28] (Asuha et al., 2002). Higher minority carrier lifetime in the presence of the NAOS layer indicates that the NAOS-SiO{sub 2}/Si interface with a low interface state density is preserved after thermal oxidation, which supports out-diffusion oxidation mechanism, by which a thermal oxide layer is formed on the NAOS SiO{sub 2} layer.

  14. Printed Nano Cu and NiSi Contacts and Metallization for Solar Cell Modules

    Energy Technology Data Exchange (ETDEWEB)

    Carmody, Michael John [Intrinsiq Materials Inc., Rochester, NY (United States)

    2017-10-11

    There has long been a desire to replace the front-side silver contacts in silicon solar cells. There are two driving forces to do this. First, silver is an expensive precious metal. Secondly, the process to use silver requires that it be formulated into screen print pastes that need a lead-containing glass frit, and the use of lead is forbidden in many parts of the world. Because of the difficulty in replacing these pastes and the attendant processes, lead exemptions have granted to solar cells. Copper has been the replacement metal of choice because it is significantly cheaper than silver and is very close to silver in electrical conductivity. Using processes which do not use lead, obviates it as an environmental contaminant. However, copper cannot be in contact with the silicon of the cell since it migrates through the silicon and causes defects which severely damage the efficiency of the cell. Hence, a conductive barrier must be placed between the copper and silicon and nickel, and especially nickel silicide, have been shown to be materials of choice. However, nickel must be sputtered and annealed to create the nickel silicide barrier, and copper has either been sputtered or plated. All of these processes require expensive, specialized equipment and plating uses environmentally unfriendly chemicals. Therefore, Intrinsiq proposed using printed nano nickel silicide ink (which we had previously invented) and printed nano copper ink to create these electrodes and barriers. We found that nano copper ink could be readily printed and sintered under a reducing atmosphere to give highly conductive grids. We further showed that nano nickel silicide ink could be readily jetted into grids on top of the silicon cell. It could then be annealed to create a barrier. However, it was found that the combination of printed NiSi and printed Cu did not give contact resistivity good enough to produce efficient cells. Only plated copper on top of the printed NiSi gave useful contact

  15. Compositional study of glow-discharge A-SiC:H films for window layer of solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Imura, T; Hiraki, A

    1983-10-01

    A series of compositional studies on various types of amorphous silicon-carbon-hydrogen alloy (a-SiC:H) were performed by means of Auger electron spectroscopy (AES) and infrared spectroscopy (IR). The difference between CH4 and C2H4 as a carbon source was examined. From the infrared absorption study it is shown that C2H4-based a-SiC:H films contain carbons as -C2H5 and -CH3,, whereas CH4-based ones as tetrahedral atoms. These results will serve to elucidate the fabrication problems of solar cells. 14 references.

  16. Fabrication and characterization of Al2O3 /Si composite nanodome structures for high efficiency crystalline Si thin film solar cells

    Directory of Open Access Journals (Sweden)

    Ruiying Zhang

    2015-12-01

    Full Text Available We report on our fabrication and characterization of Al2O3/Si composite nanodome (CND structures, which is composed of Si nanodome structures with a conformal cladding Al2O3 layer to evaluate its optical and electrical performance when it is applied to thin film solar cells. It has been observed that by application of Al2O3thin film coating using atomic layer deposition (ALD to the Si nanodome structures, both optical and electrical performances are greatly improved. The reflectivity of less than 3% over the wavelength range of from 200 nm to 2000 nm at an incident angle from 0° to 45° is achieved when the Al2O3 film is 90 nm thick. The ultimate efficiency of around 27% is obtained on the CND textured 2 μm-thick Si solar cells, which is compared to the efficiency of around 25.75% and 15% for the 2 μm-thick Si nanodome surface-decorated and planar samples respectively. Electrical characterization was made by using CND-decorated MOS devices to measure device’s leakage current and capacitance dispersion. It is found the electrical performance is sensitive to the thickness of the Al2O3 film, and the performance is remarkably improved when the dielectric layer thickness is 90 nm thick. The leakage current, which is less than 4x10−9 A/cm2 over voltage range of from -3 V to 3 V, is reduced by several orders of magnitude. C-V measurements also shows as small as 0.3% of variation in the capacitance over the frequency range from 10 kHz to 500 kHz, which is a strong indication of surface states being fully passivated. TEM examination of CND-decorated samples also reveals the occurrence of SiOx layer formed between the interface of Si and the Al2O3 film, which is thin enough that ensures the presence of field-effect passivation, From our theoretical and experimental study, we believe Al2O3 coated CND structures is a truly viable approach to achieving higher device efficiency.

  17. Fabrication and characterization of Al{sub 2}O{sub 3} /Si composite nanodome structures for high efficiency crystalline Si thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Ruiying, E-mail: ryzhang2008@sinano.ac.cn [Key lab of nanodevices and applications, Chinese Academy of Sciences, Division of nano-devices and related materials, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215123 (China); State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 China (China); Zhu, Jian; Zhang, Zhen; Wang, Yanyan; Qiu, Bocang [Key lab of nanodevices and applications, Chinese Academy of Sciences, Division of nano-devices and related materials, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215123 (China); Liu, Xuehua; Zhang, Jinping; Zhang, Yi [Platform for Characterization & Test, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215123 (China); Fang, Qi; Ren, Zhong [Oxford Instruments Plasma Technology, Yatton, Bristol, BS49 4AP (United Kingdom); Bai, Yu [School of Nano-Science and Nano-Engineering, Xi’an Jiaotong University, Suzhou, 215123 (China)

    2015-12-15

    We report on our fabrication and characterization of Al{sub 2}O{sub 3}/Si composite nanodome (CND) structures, which is composed of Si nanodome structures with a conformal cladding Al{sub 2}O{sub 3} layer to evaluate its optical and electrical performance when it is applied to thin film solar cells. It has been observed that by application of Al{sub 2}O{sub 3}thin film coating using atomic layer deposition (ALD) to the Si nanodome structures, both optical and electrical performances are greatly improved. The reflectivity of less than 3% over the wavelength range of from 200 nm to 2000 nm at an incident angle from 0° to 45° is achieved when the Al{sub 2}O{sub 3} film is 90 nm thick. The ultimate efficiency of around 27% is obtained on the CND textured 2 μm-thick Si solar cells, which is compared to the efficiency of around 25.75% and 15% for the 2 μm-thick Si nanodome surface-decorated and planar samples respectively. Electrical characterization was made by using CND-decorated MOS devices to measure device’s leakage current and capacitance dispersion. It is found the electrical performance is sensitive to the thickness of the Al{sub 2}O{sub 3} film, and the performance is remarkably improved when the dielectric layer thickness is 90 nm thick. The leakage current, which is less than 4x10{sup −9} A/cm{sup 2} over voltage range of from -3 V to 3 V, is reduced by several orders of magnitude. C-V measurements also shows as small as 0.3% of variation in the capacitance over the frequency range from 10 kHz to 500 kHz, which is a strong indication of surface states being fully passivated. TEM examination of CND-decorated samples also reveals the occurrence of SiO{sub x} layer formed between the interface of Si and the Al{sub 2}O{sub 3} film, which is thin enough that ensures the presence of field-effect passivation, From our theoretical and experimental study, we believe Al{sub 2}O{sub 3} coated CND structures is a truly viable approach to achieving higher device

  18. Improvement in performance of Si-based thin film solar cells with a nanocrystalline SiO{sub 2}–TiO{sub 2} layer

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Yang-Shih [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan, ROC (China); Lien, Shui-Yang [Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan, ROC (China); Wuu, Dong-Sing, E-mail: dsw@dragon.nchu.edu.tw [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan, ROC (China); Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan, ROC (China); Huang, Yu-Xuan; Kung, Chung-Yuan [Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan, ROC (China)

    2014-11-03

    In this paper, titanium dioxide (TiO{sub 2}) solution with grain sizes of 1–5 nm is prepared by microwave hydrothermal synthesis, and then mixed with silicon dioxide (SiO{sub 2}) solution to yield different SiO{sub 2}/TiO{sub 2} ratios. The mixed solution is then sol–gel spin-coated on glass as an anti-reflecting and self-cleaning bi-functional layer. The experimental results show that the transmittance is optimized not only by minimizing the reflectance by reflective index matching at the glass/air interface, but also by improving the film/glass interface adhesion. Adding SiO{sub 2} into TiO{sub 2} in a weight ratio of 5 leads to the highest average transmittance of 93.6% which is 3% higher than that of glass. All of the SiO{sub 2}–TiO{sub 2} films exhibit a remarkable inherent hydrophilicity even when not illuminated by ultra-violet light. Using the optimized SiO{sub 2}–TiO{sub 2} film in a hydrogenated amorphous silicon/microcrystalline silicon tandem, solar cell increases its conversion efficiency by 5.2%. Two months of outdoor testing revealed that cells with the SiO{sub 2}–TiO{sub 2} film avoid 1.7% of the degradation loss that is caused by dust and dirt in the environment. - Highlights: • High-transmittance and self-cleaning nano-sized SiO{sub 2}–TiO{sub 2} films are prepared. • Using SiO{sub 2}–TiO{sub 2} film can increase average transmittance from 90.5% (glass) to 93.6%. • The SiO{sub 2}–TiO{sub 2} films have naturally hydrophilicity with water contact angles < 13°. • Cells with the film have a 4.9% higher photocurrent than cells without the film.

  19. Effect of the CO2/SiH4 Ratio in the p-μc-SiO:H Emitter Layer on the Performance of Crystalline Silicon Heterojunction Solar Cells

    OpenAIRE

    Sritharathikhun, Jaran; Krajangsang, Taweewat; Moollakorn, Apichan; Inthisang, Sorapong; Limmanee, Amornrat; Hongsingtong, Aswin; Boriraksantikul, Nattaphong; Taratiwat, Tianchai; Akarapanjavit, Nirod; Sriprapha, Kobsak

    2014-01-01

    This paper reports the preparation of wide gap p-type hydrogenated microcrystalline silicon oxide (p-μc-SiO:H) films using a 40 MHz very high frequency plasma enhanced chemical vapor deposition technique. The reported work focused on the effects of the CO2/SiH4 ratio on the properties of p-μc-SiO:H films and the effectiveness of the films as an emitter layer of crystalline silicon heterojunction (c-Si-HJ) solar cells. A p-μc-SiO:H film with a wide optical band gap (E04), 2.1 eV, can be obtain...

  20. A first-principles model of copper-boron interactions in Si: implications for the light-induced degradation of solar Si

    Science.gov (United States)

    Wright, E.; Coutinho, J.; Öberg, S.; Torres, V. J. B.

    2017-02-01

    The recent discovery that Cu contamination of Si combined with light exposure has a significant detrimental impact on carrier life-time has drawn much concern within the solar-Si community. The effect, known as the copper-related light-induced degradation (Cu-LID) of Si solar cells, has been connected to the release of Cu interstitials within the bulk (2016 Sol. Energy Mater. Sol. Cells 147 115-26). In this paper, we describe a comprehensive analysis of the formation/dissociation process of the CuB pair in Si by means of first-principles modelling, as well as the interaction of CuB defects with photo-excited minority carriers. We confirm that the long-range interaction between the \\text{Cu}\\text{i}+ cation and the \\text{B}\\text{s}- anion has a Coulomb-like behaviour, in line with the trapping-limited diffusivity of Cu observed by transient ion drift measurements. On the other hand, the short-range interaction between the d-electrons of Cu and the excess of negative charge on \\text{B}\\text{s}- produces a repulsive effect, thereby decreasing the binding energy of the pair when compared to the ideal point-charge Coulomb model. We also find that metastable CuB pairs produce acceptor states just below the conduction band minimum, which arise from the Cu level emptied by the B acceptor. Based on these results, we argue that photo-generated minority carriers trapped by the metastable pairs can switch off the Coulomb interaction that holds the pairs together, enhancing the release of Cu interstitials, and acting as a catalyst for Cu-LID.

  1. Enhanced photovoltaic performances of graphene/Si solar cells by insertion of a MoS₂ thin film.

    Science.gov (United States)

    Tsuboi, Yuka; Wang, Feijiu; Kozawa, Daichi; Funahashi, Kazuma; Mouri, Shinichiro; Miyauchi, Yuhei; Takenobu, Taishi; Matsuda, Kazunari

    2015-09-14

    Transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic devices because of their characteristic band structure. Here, we demonstrated that the photovoltaic performances of graphene/Si Schottky junction solar cells were significantly improved by inserting a chemical vapor deposition (CVD)-grown, large MoS2 thin-film layer. This layer functions as an effective electron-blocking/hole-transporting layer. We also demonstrated that the photovoltaic properties are enhanced with the increasing number of graphene layers and the decreasing thickness of the MoS2 layer. A high photovoltaic conversion efficiency of 11.1% was achieved with the optimized trilayer-graphene/MoS2/n-Si solar cell.

  2. Road to Grid Parity through Deployment of Low-Cost 21.5% N-Type Si Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Velundur, Vijay [Suniva, Norcross, GA (United States)

    2017-04-19

    This project seeks to develop and deploy differentiated 21.5% efficient n-type Si solar cells while reaching the SunShot module cost goal of ≤ $0.50/W. This objective hinges on development of enabling low cost technologies that simplify the manufacturing process and reduce overall processing costs. These comprise of (1) Boron emitter formation and passivation; (2) Simplified processing process for emitter and BSF layers; and (3) Advanced metallization for the front and back contacts.

  3. Fire-through Ag contact formation for crystalline Si solar cells using single-step inkjet printing.

    Science.gov (United States)

    Kim, Hyun-Gang; Cho, Sung-Bin; Chung, Bo-Mook; Huh, Joo-Youl; Yoon, Sam S

    2012-04-01

    Inkjet-printed Ag metallization is a promising method of forming front-side contacts on Si solar cells due to its non-contact printing nature and fine grid resolution. However, conventional Ag inks are unable to punch through the SiN(x) anti-reflection coating (ARC) layer on emitter Si surfaces. In this study, a novel formulation of Ag ink is examined for the formation of fire-through contacts on a SiN(x)-coated Si substrate using the single-step printing of Ag ink, followed by rapid thermal annealing at 800 degrees C. In order to formulate Ag inks with fire-through contact formation capabilities, a liquid etching agent was first formulated by dissolving metal nitrates in an organic solvent and then mixing the resulting solution with a commercial Ag nanoparticle ink at various volume ratios. During the firing process, the dissolved metal nitrates decomposed into metal oxides and acted in a similar manner to the glass frit contained in Ag pastes for screen-printed Ag metallization. The newly formulated ink with a 1 wt% loading ratio of metal oxides to Ag formed finely distributed Ag crystallites on the Si substrate after firing at 800 degrees C for 1 min.

  4. Measurements for the radiation spectra of fast Z-pinches produced at compression of multi-wire arrays on the 'Angara-5-1' facility

    International Nuclear Information System (INIS)

    Bolkhovitinov, E.A.; Rupasov, A.A.; Shikanov, A.S.; Fedulov, M.V.; Grabovsky, E.V.; Gritsuk, A.N.; Oleinik, G.M.; Volkov, G.S.

    2010-01-01

    Complete text of publication follows. The measurements results on the radiation spectra of fast z-pinches produced at compression of cylindrical multi-wire tungsten and aluminum arrays in the experiments on a high-current 'Angara-5-1' facility are presented. Cylindrical multi-wire arrays has linear mass 200-400 μg/cm and the initial diameter 12-20 mm. The pinch current was about 3 MA with pulse duration of 140 ns and peak power 3 TW. The radiation spectra are measured within the range of 50-900 eV quanta by a spectrometer with transmission diffraction grating, where the radiation is recorded on the UF-4 X-ray film. An electromagnetic curtain shutter was used to protect the transmission grating from fast microparticles produced by the erosion of high-voltage electrodes. The radiation spectrum of 1-3 keV quanta was recorded by a convex crystal wide-range spectrometer. Total yield of the radiation was measured by a thermocouple calorimeter. The main part of the tungsten plasma radiative energy proves to correspond to the quasi-continuous spectrum within the range of 80-300 eV quanta. Measurements of the tungsten plasma radiation spectrum with spatial resolution by a pinch radius have shown that the effective transversal size (diameter) of the pinch as not higher than 1 mm. In the case of aluminum plasma an intensive linear radiation of the [H]- and [He]-like ions have been recorded along with a continuous and linear radiation of the [Li]- and [Be]-like ions with the range of 100-300 eV quanta. Spectral measurements of the aluminum plasma radiation with spatial resolution by the pinch radius have shown that the effective transversal size (diameter) of the pinch is around the value of 1.5 mm. Within the framework of the stationary collisional-radiative model, in respect of the [H]- and [He]-like ion spectral lines relative intensities, the parameters of the aluminum plasma pinch, namely, the electron temperature T e ∼ 550 eV and electron density n e ∼ 3 x 10 20 cm

  5. Using 1D theory to understand 3D stagnation of a wire-array Z pinch in the absence of radiation

    Science.gov (United States)

    Yu, Edmund

    2015-11-01

    Many high-energy-density systems implode towards the axis of symmetry, where it collides on itself, forming a hot plasma. However, experiments show these imploding plasmas develop three-dimensional (3D) structures. As a result, the plasma cannot completely dissipate its kinetic energy at stagnation, instead retaining significant 3D flow. A useful tool for understanding the effects of this residual flow is 3D simulation, but the amount and complexity of information can be daunting. To address this problem, we explore the connection between 3D simulation and one-dimensional (1D) theory. Such a connection, if it exists, is mutually beneficial: 1D theory can provide a clear picture of the underlying dynamics of 3D stagnation. On the other hand, deviations between theory and simulation suggest how 1D theory must be modified to account for 3D effects. In this work, we focus on a 3D, magnetohydrodynamic simulation of a compact wire-array Z pinch. To provide a simpler background against which to test our ideas, we artificially turn off radiation during the stagnation phase. Examination of the initial accumulation of mass on axis reveals oblique collision between jets, shock accretion, and vortex formation. Despite evidence for shock-dominated stagnation, a 1D shockless stagnation solution is more appropriate for describing the global dynamics, in that it reproduces the increase of on-axis density with time. However, the 1D solution must be modified to account for 3D effects: the flows suggest enhanced thermal transport as well as centrifugal force. Upon reaching peak compression, the stagnation transitions to a second phase, in which the high-pressure core on axis expands outward into the remaining imploding plasma. During this phase, a 1D shock solution describes the growth of the shock accretion region, as well as the decrease of on-axis density with time. However, the effect of 3D flows is still present: the on-axis temperature does not cool during expansion, which

  6. Development of Solar Grade Silicon (SoG-Si) Feedstock by Recycling SoG-Si Wastes

    Energy Technology Data Exchange (ETDEWEB)

    Lifeng Zhang; Anping Dong; Lucas Nana Wiredu Damoah

    2013-01-24

    Experiment results of EM separation show that the non-metallic inclusions were successfully pushed to the boundary layer of the crucible under EM force. Larger frequency and smaller current generate smaller thickness of accumulated inclusions. More detailed EM separation experiments are undergoing to investigate the factors that affect the removal efficient of inclusions from SoG-Si

  7. Intrinsic and light induced gap states in a-Si:H materials and solar cells--effects of microstructure

    Energy Technology Data Exchange (ETDEWEB)

    Wronski, C.R.; Pearce, J.M.; Deng, J.; Vlahos, V.; Collins, R.W

    2004-03-22

    The effects of microstructure on the gap states of hydrogen diluted and undiluted hydrogenated amorphous silicon (a-Si:H) thin film materials and their solar cells have been investigated. In characterizing the films the commonly used methodology of relating just the magnitudes of photocurrents and subgap absorption, {alpha}(E), was expanded to take into account states other than those due to dangling bond defects. The electron mobility-lifetime products were characterized as a function of carrier generation rates and analysis was carried out of the entire {alpha}(E) spectra and their evolution with light induced degradation. Two distinctly different defect states at 1.0 and 1.2 eV from the conduction band and their contributions to carrier recombination were identified and their respective evolution under 1 sun illumination characterized. Direct correlations were obtained between the recombination in thin films with that of corresponding solar cells. The effects of the difference in microstructure on the changes in these two gap states in films and solar cells were also identified. It is found that improved stability of protocrystalline Si:H can in part be attributed to the reduction of the 1.2 eV defects. It is also shown that ignoring the presence of multiple defects leads to erroneous conclusions being drawn about the stability of a-Si:H and SWE.

  8. Intrinsic and light induced gap states in a-Si:H materials and solar cells--effects of microstructure

    International Nuclear Information System (INIS)

    Wronski, C.R.; Pearce, J.M.; Deng, J.; Vlahos, V.; Collins, R.W.

    2004-01-01

    The effects of microstructure on the gap states of hydrogen diluted and undiluted hydrogenated amorphous silicon (a-Si:H) thin film materials and their solar cells have been investigated. In characterizing the films the commonly used methodology of relating just the magnitudes of photocurrents and subgap absorption, α(E), was expanded to take into account states other than those due to dangling bond defects. The electron mobility-lifetime products were characterized as a function of carrier generation rates and analysis was carried out of the entire α(E) spectra and their evolution with light induced degradation. Two distinctly different defect states at 1.0 and 1.2 eV from the conduction band and their contributions to carrier recombination were identified and their respective evolution under 1 sun illumination characterized. Direct correlations were obtained between the recombination in thin films with that of corresponding solar cells. The effects of the difference in microstructure on the changes in these two gap states in films and solar cells were also identified. It is found that improved stability of protocrystalline Si:H can in part be attributed to the reduction of the 1.2 eV defects. It is also shown that ignoring the presence of multiple defects leads to erroneous conclusions being drawn about the stability of a-Si:H and SWE

  9. Using high haze (> 90%) light-trapping film to enhance the efficiency of a-Si:H solar cells

    Science.gov (United States)

    Chu, Wei-Ping; Lin, Jian-Shian; Lin, Tien-Chai; Tsai, Yu-Sheng; Kuo, Chen-Wei; Chung, Ming-Hua; Hsieh, Tsung-Eong; Liu, Lung-Chang; Juang, Fuh-Shyang; Chen, Nien-Po

    2012-07-01

    The high haze light-trapping (LT) film offers enhanced scattering of light and is applied to a-Si:H solar cells. UV glue was spin coated on glass, and then the LT pattern was imprinted. Finally, a UV lamp was used to cure the UV glue on the glass. The LT film effectively increased the Haze ratio of glass and decreased the reflectance of a-Si:H solar cells. Therefore, the photon path length was increased to obtain maximum absorption by the absorber layer. High Haze LT film is able to enhance short circuit current density and efficiency of the device, as partial composite film generates broader scattering light, thereby causing shorter wave length light to be absorbed by the P layer so that the short circuit current density decreases. In case of lab-made a-Si:H thin film solar cells with v-shaped LT films, superior optoelectronic performances have been found (Voc = 0.74 V, Jsc = 15.62 mA/cm2, F.F. = 70%, and η = 8.09%). We observed ~ 35% enhancement of the short-circuit current density and ~ 31% enhancement of the conversion efficiency.

  10. A solar-thermal energy harvesting scheme: enhanced heat capacity of molten HITEC salt mixed with Sn/SiO(x) core-shell nanoparticles.

    Science.gov (United States)

    Lai, Chih-Chung; Chang, Wen-Chih; Hu, Wen-Liang; Wang, Zhiming M; Lu, Ming-Chang; Chueh, Yu-Lun

    2014-05-07

    We demonstrated enhanced solar-thermal storage by releasing the latent heat of Sn/SiO(x) core-shell nanoparticles (NPs) embedded in a eutectic salt. The microstructures and chemical compositions of Sn/SiO(x) core-shell NPs were characterized. In situ heating XRD provides dynamic crystalline information about the Sn/SiO(x) core-shell NPs during cyclic heating processes. The latent heat of ∼29 J g(-1) for Sn/SiO(x) core-shell NPs was measured, and 30% enhanced heat capacity was achieved from 1.57 to 2.03 J g(-1) K(-1) for the HITEC solar salt without and with, respectively, a mixture of 5% Sn/SiO(x) core-shell NPs. In addition, an endurance cycle test was performed to prove a stable operation in practical applications. The approach provides a method to enhance energy storage in solar-thermal power plants.

  11. GaAsPN-based PIN solar cells MBE-grown on GaP substrates: toward the III-V/Si tandem solar cell

    Science.gov (United States)

    Da Silva, M.; Almosni, S.; Cornet, C.; Létoublon, A.; Levallois, C.; Rale, P.; Lombez, L.; Guillemoles, J.-F.; Durand, O.

    2015-03-01

    GaAsPN semiconductors are promising material for the elaboration of high efficiencies tandem solar cells on silicon substrates. GaAsPN diluted nitride alloy is studied as the top junction material due to its perfect lattice matching with the Si substrate and its ideal bandgap energy allowing a perfect current matching with the Si bottom cell. We review our recent progress in materials development of the GaAsPN alloy and our recent studies of some of the different building blocks toward the elaboration of a PIN solar cell. A lattice matched (with a GaP(001) substrate, as a first step toward the elaboration on a Si substrate) 1μm-thick GaAsPN alloy has been grown by MBE. After a post-growth annealing step, this alloy displays a strong absorption around 1.8-1.9 eV, and efficient photoluminescence at room temperature suitable for the elaboration of the targeted solar cell top junction. Early stage GaAsPN PIN solar cells prototypes have been grown on GaP (001) substrates, with 2 different absorber thicknesses (1μm and 0.3μm). The external quantum efficiencies and the I-V curves show that carriers have been extracted from the GaAsPN alloy absorbers, with an open-circuit voltage of 1.18 V, while displaying low short circuit currents meaning that the GaAsPN structural properties needs a further optimization. A better carrier extraction has been observed with the absorber displaying the smallest thickness, which is coherent with a low carriers diffusion length in our GaAsPN compound. Considering all the pathways for improvement, the efficiency obtained under AM1.5G is however promising.

  12. Low-Temperature, Chemically Grown Titanium Oxide Thin Films with a High Hole Tunneling Rate for Si Solar Cells

    Directory of Open Access Journals (Sweden)

    Yu-Tsu Lee

    2016-05-01

    Full Text Available In this paper, we propose a chemically grown titanium oxide (TiO2 on Si to form a heterojunction for photovoltaic devices. The chemically grown TiO2 does not block hole transport. Ultraviolet photoemission spectroscopy was used to study the band alignment. A substantial band offset at the TiO2/Si interface was observed. X-ray photoemission spectroscopy (XPS revealed that the chemically grown TiO2 is oxygen-deficient and contains numerous gap states. A multiple-trap-assisted tunneling (TAT model was used to explain the high hole injection rate. According to this model, the tunneling rate can be 105 orders of magnitude higher for holes passing through TiO2 than for flow through SiO2. With 24-nm-thick TiO2, a Si solar cell achieves a 33.2 mA/cm2 photocurrent on a planar substrate, with a 9.4% power conversion efficiency. Plan-view scanning electron microscopy images indicate that a moth-eye-like structure formed during TiO2 deposition. This structure enables light harvesting for a high photocurrent. The high photocurrent and ease of production of chemically grown TiO2 imply that it is a suitable candidate for future low-cost, high-efficiency solar cell applications.

  13. Influence of oblique-angle sputtered transparent conducting oxides on performance of Si-based thin film solar cells

    International Nuclear Information System (INIS)

    Leem, Jung Woo; Yu, Jae Su

    2011-01-01

    The transparent conducting oxide (TCO) films with low-refractive-index (low-n) are fabricated by the oblique-angle sputtering method. By using the experimentally measured physical data of the fabricated low-n TCO films as the simulation parameters, the effect of low-n TCOs on the performance of a-Si:H/μc-Si:H tandem thin film solar cells is investigated using Silvaco ATLAS. The Al-doped zinc oxide, indium tin oxide (ITO), and Sb-doped tin oxide films are deposited at the flux incidence angles of θ i = 0 (normal sputtering) and θ i = 80 from the sputtering target during the sputtering process. The oblique-angle sputtered films at θ i = 80 show the inclined columnar nanostructures compared to those at θ i = 0 , modifying the optical properties of the films. This is caused mainly by the increase of porosity within the film which leads to its low-n characteristics. The a-Si:H/μc-Si:H tandem thin film solar cell incorporated with the low-n ITO film exhibits an improvement in the conversion efficiency of ∝1% under AM1.5g illumination because of its higher transmittance and lower absorption compared to that with the ITO film at θ i = 0 , indicating a conversion efficiency of 13.75%. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Influence of oblique-angle sputtered transparent conducting oxides on performance of Si-based thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Leem, Jung Woo; Yu, Jae Su [Department of Electronics and Radio Engineering, Kyung Hee University, 1 Seocheon-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-701 (Korea, Republic of)

    2011-09-15

    The transparent conducting oxide (TCO) films with low-refractive-index (low-n) are fabricated by the oblique-angle sputtering method. By using the experimentally measured physical data of the fabricated low-n TCO films as the simulation parameters, the effect of low-n TCOs on the performance of a-Si:H/{mu}c-Si:H tandem thin film solar cells is investigated using Silvaco ATLAS. The Al-doped zinc oxide, indium tin oxide (ITO), and Sb-doped tin oxide films are deposited at the flux incidence angles of {theta}{sub i} = 0 (normal sputtering) and {theta}{sub i} = 80 from the sputtering target during the sputtering process. The oblique-angle sputtered films at {theta}{sub i} = 80 show the inclined columnar nanostructures compared to those at {theta}{sub i} = 0 , modifying the optical properties of the films. This is caused mainly by the increase of porosity within the film which leads to its low-n characteristics. The a-Si:H/{mu}c-Si:H tandem thin film solar cell incorporated with the low-n ITO film exhibits an improvement in the conversion efficiency of {proportional_to}1% under AM1.5g illumination because of its higher transmittance and lower absorption compared to that with the ITO film at {theta}{sub i} = 0 , indicating a conversion efficiency of 13.75%. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. High-Rate Fabrication of a-Si-Based Thin-Film Solar Cells Using Large-Area VHF PECVD Processes

    Energy Technology Data Exchange (ETDEWEB)

    Deng, Xunming [University of Toledo; Fan, Qi Hua

    2011-12-31

    The University of Toledo (UT), working in concert with it’s a-Si-based PV industry partner Xunlight Corporation (Xunlight), has conducted a comprehensive study to develop a large-area (3ft x 3ft) VHF PECVD system for high rate uniform fabrication of silicon absorber layers, and the large-area VHF PECVD processes to achieve high performance a-Si/a-SiGe or a-Si/nc-Si tandem junction solar cells during the period of July 1, 2008 to Dec. 31, 2011, under DOE Award No. DE-FG36-08GO18073. The project had two primary goals: (i) to develop and improve a large area (3 ft × 3 ft) VHF PECVD system for high rate fabrication of > = 8 Å/s a-Si and >= 20 Å/s nc-Si or 4 Å/s a-SiGe absorber layers with high uniformity in film thicknesses and in material structures. (ii) to develop and optimize the large-area VHF PECVD processes to achieve high-performance a-Si/nc-Si or a-Si/a-SiGe tandem-junction solar cells with >= 10% stable efficiency. Our work has met the goals and is summarized in “Accomplishments versus goals and objectives”.

  16. Light trapping in a-Si/c-Si heterojunction solar cells by embedded ITO nanoparticles at rear surface

    Science.gov (United States)

    Dhar, Sukanta; Mandal, Sourav; Mitra, Suchismita; Ghosh, Hemanta; Mukherjee, Sampad; Banerjee, Chandan; Saha, Hiranmoy; Barua, A. K.

    2017-12-01

    The advantages of the amorphous silicon (a-Si)/crystalline silicon (c-Si) hetero junction technology are low temperature (oxide (ITO) nanoparticles embedded in amorphous silicon material at the rear side of the crystalline wafer. The nanoparticles were embedded in silicon to have higher scattering efficiency, as has been established by simulation studies. It has been shown that significant photocurrent enhancements (32.8 mA cm-2 to 35.1 mA cm-2) are achieved because of high scattering and coupling efficiency of the embedded nanoparticles into the silicon device, leading to an increase in efficiency from 13.74% to 15.22%. In addition, we have observed a small increase in open circuit voltage. This may be due to the surface passivation during the ITO nanoparticle formation with hydrogen plasma treatment. We also support our experimental results by simulation, with the help of a commercial finite-difference time-domain (FDTD) software solution.

  17. Alternative approaches of SiC & related wide bandgap materials in light emitting & solar cell applications

    Science.gov (United States)

    Wellmann, Peter; Syväjärvi, Mikael; Ou, Haiyan

    2014-03-01

    Materials for optoelectronics give a fascinating variety of issues to consider. Increasingly important are white light emitting diode (LED) and solar cell materials. Profound energy savings can be done by addressing new materials. White light emitting diodes are becoming common in our lighting scene. There is a great energy saving in the transition from the light bulb to white light emitting diodes via a transition of fluorescent light tubes. However, the white LEDs still suffer from a variety of challenges in order to be in our daily use. Therefore there is a great interest in alternative lighting solutions that could be part of our daily life. All materials create challenges in fabrication. Defects reduce the efficiency of optical transitions involved in the light emitting diode materials. The donor-acceptor co-doped SiC is a potential light converter for a novel monolithic all-semiconductor white LED. In spite of considerable research, the internal quantum efficiency is far less than theoretically predicted and is likely a fascinating scientific field for studying materials growth, defects and optical transitions. Still, efficient Si-based light source represents an ongoing research field in photonics that requires high efficiency at room temperature, wavelength tuning in a wide wavelength range, and easy integration in silicon photonic devices. In some of these devices, rare earth doped materials is considered as a potential way to provide luminescence spanning in a wide wavelength range. Divalent and trivalent oxidation states of Eu provide emitting centers in the visible region. In consideration, the use of Eu in photonics requires Eu doped thin films that are compatible with CMOS technology but for example faces material science issues like a low Eu solid solubility in silica. Therefore approaches aim to obtain efficient light emission from silicon oxycarbide which has a luminescence in the visible range and can be a host material for rare earth ions. The

  18. Mechanical Properties of ZTO, ITO, and a-Si:H Multilayer Films for Flexible Thin Film Solar Cells.

    Science.gov (United States)

    Hengst, Claudia; Menzel, Siegfried B; Rane, Gayatri K; Smirnov, Vladimir; Wilken, Karen; Leszczynska, Barbara; Fischer, Dustin; Prager, Nicole

    2017-03-01

    The behavior of bi- and trilayer coating systems for flexible a-Si:H based solar cells consisting of a barrier, an electrode, and an absorption layer is studied under mechanical load. First, the film morphology, stress, Young's modulus, and crack onset strain (COS) were analyzed for single film coatings of various thickness on polyethylene terephthalate (PET) substrates. In order to demonstrate the role of the microstructure of a single film on the mechanical behavior of the whole multilayer coating, two sets of InSnOx (indium tin oxide, ITO) conductive coatings were prepared. Whereas a characteristic grain-subgrain structure was observed in ITO-1 films, grain growth was suppressed in ITO-2 films. ITO-1 bilayer coatings showed two-step failure under tensile load with cracks propagating along the ITO-1/a-Si:H-interface, whereas channeling cracks in comparable bi- and trilayers based on amorphous ITO-2 run through all constituent layers. A two-step failure is preferable from an application point of view, as it may lead to only a degradation of the performance instead of the ultimate failure of the device. Hence, the results demonstrate the importance of a fine-tuning of film microstructure not only for excellent electrical properties, but also for a high mechanical performance of flexible devices (e.g., a-Si:H based solar cells) during fabrication in a roll-to-roll process or under service.

  19. Mechanical Properties of ZTO, ITO, and a-Si:H Multilayer Films for Flexible Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Claudia Hengst

    2017-03-01

    Full Text Available The behavior of bi- and trilayer coating systems for flexible a-Si:H based solar cells consisting of a barrier, an electrode, and an absorption layer is studied under mechanical load. First, the film morphology, stress, Young’s modulus, and crack onset strain (COS were analyzed for single film coatings of various thickness on polyethylene terephthalate (PET substrates. In order to demonstrate the role of the microstructure of a single film on the mechanical behavior of the whole multilayer coating, two sets of InSnOx (indium tin oxide, ITO conductive coatings were prepared. Whereas a characteristic grain–subgrain structure was observed in ITO-1 films, grain growth was suppressed in ITO-2 films. ITO-1 bilayer coatings showed two-step failure under tensile load with cracks propagating along the ITO-1/a-Si:H-interface, whereas channeling cracks in comparable bi- and trilayers based on amorphous ITO-2 run through all constituent layers. A two-step failure is preferable from an application point of view, as it may lead to only a degradation of the performance instead of the ultimate failure of the device. Hence, the results demonstrate the importance of a fine-tuning of film microstructure not only for excellent electrical properties, but also for a high mechanical performance of flexible devices (e.g., a-Si:H based solar cells during fabrication in a roll-to-roll process or under service.

  20. Construction and Study of Hetreojunction Solar Cell Based on Dodecylbenzene Sulfonic Acid-Doped Polyaniline/n-Si

    Directory of Open Access Journals (Sweden)

    I. Morsi

    2012-01-01

    Full Text Available Polyaniline/n-type Si heterojunctions solar cell are fabricated by spin coating of soluble dodecylbenzene sulfonic acid (DBSA-doped polyaniline onto n-type Si substrate. The electrical characterization of the Al/n-type Si/polyaniline/Au (Ag structure was investigated by using current-voltage (I-V, capacitance-voltage (C-V, and impedance spectroscopy under darkness and illumination. The photovoltaic cell parameters, that is, open-circuit voltage (oc, short-circuit current density (sc, fill factor (FF, and energy conversion efficiency (η were calculated. The highest sc, oc, and efficiency of these heterojunctions obtained using PANI-DBSA as a window layer (wideband gap and Au as front contact are 1.8 mA/cm2, 0.436 V, and 0.13%, respectively. From Mott-Schottky plots, it was found that order of charge carrier concentrations is 3.5×1014 and 1.0×1015/cm3 for the heterojunctions using Au as front contact under darknessness and illumination, respectively. Impedance study of this type of solar cell showed that the shunt resistance and series resistance decreased under illumination.

  1. Numerical Optimization of a Bifacial Bi-Glass Thin-Film a-Si:H Solar Cell for Higher Conversion Efficiency

    Science.gov (United States)

    Berrian, Djaber; Fathi, Mohamed; Kechouane, Mohamed

    2018-02-01

    Bifacial solar cells that maximize the energy output per a square meter have become a new fashion in the field of photovoltaic cells. However, the application of thin-film material on bifacial solar cells, viz., thin-film amorphous hydrogenated silicon ( a- Si:H), is extremely rare. Therefore, this paper presents the optimization and influence of the band gap, thickness and doping on the performance of a glass/glass thin-film a- Si:H ( n- i- p) bifacial solar cell, using a computer-aided simulation tool, Automat for simulation of hetero-structures (AFORS-HET). It is worth mentioning that the thickness and the band gap of the i-layer are the key parameters in achieving higher efficiency and hence it has to be handled carefully during the fabrication process. Furthermore, an efficient thin-film a- Si:H bifacial solar cell requires thinner and heavily doped n and p emitter layers. On the other hand, the band gap of the p-layer showed a dramatic reduction of the efficiency at 2.3 eV. Moreover, a high bifaciality factor of more than 92% is attained, and top efficiency of 10.9% is revealed under p side illumination. These optimizations demonstrate significant enhancements of the recent experimental work on thin-film a- Si:H bifacial solar cells and would also be useful for future experimental investigations on an efficient a- Si:H thin-film bifacial solar cell.

  2. Reduction of bonding resistance of two-terminal III-V/Si tandem solar cells fabricated using smart-stack technology

    Science.gov (United States)

    Baba, Masaaki; Makita, Kikuo; Mizuno, Hidenori; Takato, Hidetaka; Sugaya, Takeyoshi; Yamada, Noboru

    2017-12-01

    This paper describes a method that remarkably reduces the bonding resistance of mechanically stacked two-terminal GaAs/Si and InGaP/Si tandem solar cells, where the top and bottom cells are bonded using a Pd nanoparticle array. A transparent conductive oxide (TCO) layer, which partially covers the surface of the Si bottom cell below the electrodes of the III-V top cell, significantly enhances the fill factor (FF) and cell conversion efficiency. The partial TCO layer reduces the bonding resistance and thus, increases the FF and efficiency of InGaP/Si by factors of 1.20 and 1.11, respectively. Eventually, the efficiency exceeds 15%. Minimizing the optical losses at the bonding interfaces of the TCO layer is important in the fabrication of high-efficiency solar cells. To help facilitate this, the optical losses in the tandem solar cells are thoroughly characterized through optical simulations and experimental verifications.

  3. Photoluminescence, structural and electrical properties of passivated a-Si:H based thin films and corresponding solar cells

    International Nuclear Information System (INIS)

    Pincik, E.; Kobayashi, H.; Takahashi, M.; Fujiwara, N.; Brunner, R.; Gleskova, H.; Jergel, M.; Muellerova, J.; Kucera, M.; Falcony, C.; Ortega, L.; Rusnak, J.; Mikula, M.; Zahoran, M.; Jurani, R.; Kral, M.

    2004-01-01

    This paper deals with the photoluminescence, structural and electrical properties of chemically passivated a-Si:H based thin films and corresponding thin film solar cells. The structures were chemically passivated in three types of KCN and HCN solutions containing MeOH and/or with water. The photoluminescence measurements were performed at 6 K using Ar laser and lock-in signal recording device containing Ge and Si photodetectors. Optically determined band gap related photoluminescence signals were observed between 1.1 and 1.7 eV. The electrical properties were measured by a high-sensitive charge version of deep level transient spectroscopy (Q-DLTS). The evolution of three basic groups of defects was observed. The structural studies were realized by the standard X-ray diffraction analysis. The cyanide treatment improved significantly the electrical characteristics of both corresponding MOS structures and solar cells due to the passivation of some parts of the dangling bonds by CN group. Particularly, the passivation of the defects at interfaces in MOS or solar cell multilayer structures was achieved which is of primary practical importance

  4. Numerical investigation of a double-junction a:SiGe thin-film solar cell including the multi-trench region

    International Nuclear Information System (INIS)

    Kacha, K.; Djeffal, F.; Ferhati, H.; Arar, D.; Meguellati, M.

    2015-01-01

    We present a new approach based on the multi-trench technique to improve the electrical performances, which are the fill factor and the electrical efficiency. The key idea behind this approach is to introduce a new multi-trench region in the intrinsic layer, in order to modulate the total resistance of the solar cell. Based on 2-D numerical investigation and optimization of amorphous SiGe double-junction (a-Si:H/a-SiGe:H) thin film solar cells, in the present paper numerical models of electrical and optical parameters are developed to explain the impact of the multi-trench technique on the improvement of the double-junction solar cell electrical behavior for high performance photovoltaic applications. In this context, electrical characteristics of the proposed design are analyzed and compared with conventional amorphous silicon double-junction thin-film solar cells. (paper)

  5. Imaging the Spatial Evolution of Degradation in Perovskite/Si Tandem Solar Cells After Exposure to Humid Air

    KAUST Repository

    Song, Zhaoning

    2017-09-14

    Monolithically integrated two-terminal perovskite/Si tandem solar cells promise to achieve high power conversion efficiency. However, there is a concern that the stability of the perovskite top cell will limit the long-term performance of tandem devices. To investigate the impact of perovskite cell degradation on the photocurrent generation and collection in the individual subcells, we employed light beam induced current mapping to spatially resolve the photocurrent under controlled humidity conditions. The evolution of the device behavior is consistent with the formation of an optically transparent hydrated perovskite phase that allows the bottom Si cell to continue to generate photocurrent at the probing wavelength (532 nm). Additional measurements were performed on perovskite thin films on glass substrates to verify the interpretation.

  6. Resolving the nanostructure of plasma-enhanced chemical vapor deposited nanocrystalline SiOx layers for application in solar cells

    Science.gov (United States)

    Klingsporn, M.; Kirner, S.; Villringer, C.; Abou-Ras, D.; Costina, I.; Lehmann, M.; Stannowski, B.

    2016-06-01

    Nanocrystalline silicon suboxides (nc-SiOx) have attracted attention during the past years for the use in thin-film silicon solar cells. We investigated the relationships between the nanostructure as well as the chemical, electrical, and optical properties of phosphorous, doped, nc-SiO0.8:H fabricated by plasma-enhanced chemical vapor deposition. The nanostructure was varied through the sample series by changing the deposition pressure from 533 to 1067 Pa. The samples were then characterized by X-ray photoelectron spectroscopy, spectroscopic ellipsometry, Raman spectroscopy, aberration-corrected high-resolution transmission electron microscopy, selected-area electron diffraction, and a specialized plasmon imaging method. We found that the material changed with increasing pressure from predominantly amorphous silicon monoxide to silicon dioxide containing nanocrystalline silicon. The nanostructure changed from amorphous silicon filaments to nanocrystalline silicon filaments, which were found to cause anisotropic electron transport.

  7. Imaging the Spatial Evolution of Degradation in Perovskite/Si Tandem Solar Cells After Exposure to Humid Air

    KAUST Repository

    Song, Zhaoning; Werner, Jeremie; Watthage, Suneth C.; Sahli, Florent; Shrestha, Niraj; De Wolf, Stefaan; Niesen, Bjorn; Phillips, Adam B.; Ballif, Christophe; Ellingson, Randy J.; Heben, Michael J.

    2017-01-01

    Monolithically integrated two-terminal perovskite/Si tandem solar cells promise to achieve high power conversion efficiency. However, there is a concern that the stability of the perovskite top cell will limit the long-term performance of tandem devices. To investigate the impact of perovskite cell degradation on the photocurrent generation and collection in the individual subcells, we employed light beam induced current mapping to spatially resolve the photocurrent under controlled humidity conditions. The evolution of the device behavior is consistent with the formation of an optically transparent hydrated perovskite phase that allows the bottom Si cell to continue to generate photocurrent at the probing wavelength (532 nm). Additional measurements were performed on perovskite thin films on glass substrates to verify the interpretation.

  8. (Sr,Ba)(Si,Ge)2 for thin-film solar-cell applications: First-principles study

    International Nuclear Information System (INIS)

    Kumar, Mukesh; Umezawa, Naoto; Imai, Motoharu

    2014-01-01

    In order to meet the increasing demand for electric power generation from solar energy conversion, the development of efficient light absorber materials has been awaited. To this end, the electronic and optical properties of advanced alkaline-earth-metals disilicides and digermanides (SrSi 2 , BaSi 2 , SrGe 2 , and BaGe 2 ) are studied by means of the density functional theory using HSE06 exchange-correlation energy functional. Our calculations show that all these orthorhombic structured compounds have fundamental indirect band gaps in the range E g ≈ 0.89–1.25 eV, which is suitable for solar cell applications. The estimated lattice parameters and band gaps are in good agreement with experiments. Our calculations show that the electronic band structures of all four compounds are very similar except in the vicinity of the Γ-point. The valence band of these compounds is made up by Si(Ge)-p states, whereas the conduction band is composed of Sr(Ba)-d states. Their band alignments are carefully determined by estimating the work function of each compound using slab model. The optical properties are discussed in terms of the complex dielectric function ε(ω) = ε 1 (ω) + iε 2 (ω). The static and high-frequency dielectric constants are calculated, taking into account the ionic contribution. The absorption coefficient α(ω) demonstrates that a low energy dispersion of the conduction band, which results in a flat conduction band minimum, leads to large optical activity in these compounds. Therefore, alkaline-earth-metals disilicides and digermanides possess great potential as light absorbers for applications in thin-film solar cell technologies.

  9. n-MoS2/p-Si Solar Cells with Al2O3 Passivation for Enhanced Photogeneration.

    Science.gov (United States)

    Rehman, Atteq Ur; Khan, Muhammad Farooq; Shehzad, Muhammad Arslan; Hussain, Sajjad; Bhopal, Muhammad Fahad; Lee, Sang Hee; Eom, Jonghwa; Seo, Yongho; Jung, Jongwan; Lee, Soo Hong

    2016-11-02

    Molybdenum disulfide (MoS 2 ) has recently emerged as a promising candidate for fabricating ultrathin-film photovoltaic devices. These devices exhibit excellent photovoltaic performance, superior flexibility, and low production cost. Layered MoS 2 deposited on p-Si establishes a built-in electric field at MoS 2 /Si interface that helps in photogenerated carrier separation for photovoltaic operation. We propose an Al 2 O 3 -based passivation at the MoS 2 surface to improve the photovoltaic performance of bulklike MoS 2 /Si solar cells. Interestingly, it was observed that Al 2 O 3 passivation enhances the built-in field by reduction of interface trap density at surface. Our device exhibits an improved power conversion efficiency (PCE) of 5.6%, which to our knowledge is the highest efficiency among all bulklike MoS 2 -based photovoltaic cells. The demonstrated results hold the promise for integration of bulklike MoS 2 films with Si-based electronics to develop highly efficient photovoltaic cells.

  10. Analysis on the effect of polysulfide electrolyte composition for higher performance of Si quantum dot-sensitized solar cells

    International Nuclear Information System (INIS)

    Seo, Hyunwoong; Wang, Yuting; Uchida, Giichiro; Kamataki, Kunihiro; Itagaki, Naho; Koga, Kazunori; Shiratani, Masaharu

    2013-01-01

    Quantum dot-sensitized solar cell (QDSC) based on multiple exciton generation of QD has been expected to realize high efficiency. This work focused on Si QD instead of conventional QD materials because of their toxicity and scarcity. Si QDs were fabricated by multi-hollow discharge plasma chemical vapor deposition. General QDSCs use polysulfide electrolyte because it is suitable for stabilizing QDs and its redox reaction is the best as compared with other redox systems. The improvement of redox reaction which is one of the slowest reactions in the kinetic analysis is closely connected with the enhancement of performance. For the enhancement on the overall performance of Si QDSC, the performance dependence on electrolyte composition was investigated. The concentrations of Na 2 S and S were varied for the activation of redox reaction and KCl concentration was optimized for the improvement of electrolyte characteristics. Consequently, the best performance of Si QDSC was obtained with 1 M Na 2 S, 2 M S, and 0.4 M KCl polysulfide electrolyte

  11. Si Hybrid Solar Cells with 13% Efficiency via Concurrent Improvement in Optical and Electrical Properties by Employing Graphene Quantum Dots

    KAUST Repository

    Tsai, Meng Lin; Wei, Wan-Rou; Tang, Libin; Chang, Hung Chih; Tai, Shih Hsiang; Yang, Po Kang; Lau, Shu Ping; Chen, Lih Juann; He, Jr-Hau

    2015-01-01

    By employing graphene quantum dots (GQDs) in PEDOT:PSS, we have achieved an efficiency of 13.22% in Si/PEDOT:PSS hybrid solar cells. The efficiency enhancement is based on concurrent improvement in optical and electrical properties by the photon downconversion process and the improved conductivity of PEDOT:PSS via appropriate incorporation of GQDs. After introducing GQDs into PEDOT:PSS, the short circuit current and the fill factor of rear-contact optimized hybrid cells are increased from 32.11 to 36.26 mA/cm and 62.85% to 63.87%, respectively. The organic-inorganic hybrid solar cell obtained herein holds the promise for developing photon-managing, low-cost, and highly efficient photovoltaic devices.

  12. Si Hybrid Solar Cells with 13% Efficiency via Concurrent Improvement in Optical and Electrical Properties by Employing Graphene Quantum Dots

    KAUST Repository

    Tsai, Meng Lin

    2015-12-18

    By employing graphene quantum dots (GQDs) in PEDOT:PSS, we have achieved an efficiency of 13.22% in Si/PEDOT:PSS hybrid solar cells. The efficiency enhancement is based on concurrent improvement in optical and electrical properties by the photon downconversion process and the improved conductivity of PEDOT:PSS via appropriate incorporation of GQDs. After introducing GQDs into PEDOT:PSS, the short circuit current and the fill factor of rear-contact optimized hybrid cells are increased from 32.11 to 36.26 mA/cm and 62.85% to 63.87%, respectively. The organic-inorganic hybrid solar cell obtained herein holds the promise for developing photon-managing, low-cost, and highly efficient photovoltaic devices.

  13. Application of hydrogen-doped In2O3 transparent conductive oxide to thin-film microcrystalline Si solar cells

    International Nuclear Information System (INIS)

    Koida, Takashi; Sai, Hitoshi; Kondo, Michio

    2010-01-01

    Hydrogen-doped In 2 O 3 (IO:H) films with high electron mobility and improved near-infrared (NIR) transparency have been applied as a transparent conducting oxide (TCO) electrode in substrate-type hydrogenated microcrystalline silicon (μc-Si:H) solar cells. The incorporation of IO:H, instead of conventional Sn-doped In 2 O 3 , improved the short-circuit current density (J sc ) and the resulting conversion efficiency. Optical analysis of the solar cells and TCO films revealed that the improvement in J sc is due to the improved spectral sensitivity in the visible and NIR wavelengths by reduction of absorption loss caused by free carriers in the TCO films.

  14. Growth of BaSi2 continuous films on Ge(111) by molecular beam epitaxy and fabrication of p-BaSi2/n-Ge heterojunction solar cells

    Science.gov (United States)

    Takabe, Ryota; Yachi, Suguru; Tsukahara, Daichi; Toko, Kaoru; Suemasu, Takashi

    2017-05-01

    We grew BaSi2 films on Ge(111) substrates by various growth methods based on molecular beam epitaxy (MBE). First, we attempted to form BaSi2 films directly on Ge(111) by MBE without templates. We next formed BaSi2 films using BaGe2 templates as commonly used for MBE growth of BaSi2 on Si substrates. Contrary to our prediction, the lateral growth of BaSi2 was not promoted by these two methods; BaSi2 formed not into a continuous film but into islands. Although streaky patterns of reflection high-energy electron diffraction were observed inside the growth chamber, no X-ray diffraction lines of BaSi2 were observed in samples taken out from the growth chamber. Such BaSi2 islands were easily to get oxidized. We finally attempted to form a continuous BaSi2 template layer on Ge(111) by solid phase epitaxy, that is, the deposition of amorphous Ba-Si layers onto MBE-grown BaSi2 epitaxial islands, followed by post annealing. We achieved the formation of an approximately 5-nm-thick BaSi2 continuous layer by this method. Using this BaSi2 layer as a template, we succeeded in forming a-axis-oriented 520-nm-thick BaSi2 epitaxial films on Ge substrates, although (111)-oriented Si grains were included in the grown layer. We next formed a B-doped p-BaSi2(20 nm)/n-Ge(111) heterojunction solar cell. A wide-spectrum response from 400 to 2000 nm was achieved. At an external bias voltage of 1 V, the external quantum efficiency reached as high as 60%, demonstrating the great potential of BaSi2/Ge combination. However, the efficiency of a solar cell under AM1.5 illumination was quite low (0.1%). The origin of such a low efficiency was examined.

  15. Nano-structural properties of ZnO films for Si based heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Breivik, T.H. [University of Oslo, Department of Physics, P.O. Box 1048, Blindern, NO-0316, Oslo (Norway)], E-mail: t.h.breivik@fys.uio.no; Diplas, S. [University of Oslo, Department of Physics, P.O. Box 1048, Blindern, NO-0316, Oslo (Norway); University of Oslo, Center for Material Science and Nanotechnology, P.O. Box 1126, Blindern, NO-0318 Oslo (Norway); Ulyashin, A.G. [Section for Renewable Energy, Institute for Energy Technology, P.O. Box 40, NO-2027 Kjeller (Norway); Gunnaes, A.E. [University of Oslo, Department of Physics, P.O. Box 1048, Blindern, NO-0316, Oslo (Norway); Olaisen, B.R.; Wright, D.N.; Holt, A. [Section for Renewable Energy, Institute for Energy Technology, P.O. Box 40, NO-2027 Kjeller (Norway); Olsen, A. [University of Oslo, Department of Physics, P.O. Box 1048, Blindern, NO-0316, Oslo (Norway)

    2007-10-15

    Properties and structure of ZnO and ZnO:Al films deposited on c-Si, a-Si:H/Si and glass substrates are studied by various methods. The transmittance of the ZnO:Al was found to be higher when compared to ZnO, and the refractive index lower. X-ray photoelectron spectroscopy (XPS) shows that the screening efficiency in the presence of core holes is enhanced in the Al doped ZnO. The roughness of the ZnO:Al surfaces is strongly substrate dependent. With transmission electron microscopy (TEM) a 2-3 nm thick amorphous interfacial layer was observed independently of substrate and doping. Deposition of ZnO on a-Si:H substrate results in crystallization of the a-Si:H layer independently of Al doping.

  16. Nano-structural properties of ZnO films for Si based heterojunction solar cells

    International Nuclear Information System (INIS)

    Breivik, T.H.; Diplas, S.; Ulyashin, A.G.; Gunnaes, A.E.; Olaisen, B.R.; Wright, D.N.; Holt, A.; Olsen, A.

    2007-01-01

    Properties and structure of ZnO and ZnO:Al films deposited on c-Si, a-Si:H/Si and glass substrates are studied by various methods. The transmittance of the ZnO:Al was found to be higher when compared to ZnO, and the refractive index lower. X-ray photoelectron spectroscopy (XPS) shows that the screening efficiency in the presence of core holes is enhanced in the Al doped ZnO. The roughness of the ZnO:Al surfaces is strongly substrate dependent. With transmission electron microscopy (TEM) a 2-3 nm thick amorphous interfacial layer was observed independently of substrate and doping. Deposition of ZnO on a-Si:H substrate results in crystallization of the a-Si:H layer independently of Al doping

  17. Improved opto-electronic properties of silicon heterojunction solar cells with SiO x /Tungsten-doped indium oxide double anti-reflective coatings

    Science.gov (United States)

    Yu, Jian; Zhou, Jie; Bian, Jiantao; Zhang, Liping; Liu, Yucheng; Shi, Jianhua; Meng, Fanying; Liu, Jinning; Liu, Zhengxin

    2017-08-01

    Amorphous SiO x was prepared by plasma enhanced chemical vapor deposition (PECVD) to form SiO x /tungsten-doped indium oxide (IWO) double anti-reflective coatings for silicon heterojunction (SHJ) solar cell. The sheet resistance of SiO x /IWO stacks decreases due to plasma treatment during deposition process, which means thinner IWO film would be deposited for better optical response. However, the comparisons of three anti-reflective coating (ARC) structures reveal that SiO x film limits carier transport and the path of IWO-SiO x -Ag structure is non-conductive. The decrease of sheet resistance is defined as pseudo conductivity. IWO film capping with SiO x allows observably reduced reflectance and better response in 300-400 and 600-1200 nm wavelength ranges. Compared with IWO single ARC, the average reflection is reduced by 1.65% with 70 nm SiO x /80 nm IWO double anti-reflective coatings (DARCs) in 500-1200 nm wavelength range, leading to growing external quantum efficiency response, short circuit current density (J sc), and efficiency. After well optimization of SiO x /IWO stacks, an impressive efficiency of 23.08% is obtained with high J sc and without compromising open circuit voltage (V oc) and fill factor. SiO x /IWO DARCs provide better anti-reflective properties over a broad range of wavelength, showing promising application for SHJ solar cells.

  18. Microcrystalline silicon oxides for silicon-based solar cells: impact of the O/Si ratio on the electronic structure

    Science.gov (United States)

    Bär, M.; Starr, D. E.; Lambertz, A.; Holländer, B.; Alsmeier, J.-H.; Weinhardt, L.; Blum, M.; Gorgoi, M.; Yang, W.; Wilks, R. G.; Heske, C.

    2014-10-01

    Hydrogenated microcrystalline silicon oxide (μc-SiOx:H) layers are one alternative approach to ensure sufficient interlayer charge transport while maintaining high transparency and good passivation in Si-based solar cells. We have used a combination of complementary x-ray and electron spectroscopies to study the chemical and electronic structure of the (μc-SiOx:H) material system. With these techniques, we monitor the transition from a purely Si-based crystalline bonding network to a silicon oxide dominated environment, coinciding with a significant decrease of the material's conductivity. Most Si-based solar cell structures contain emitter/contact/passivation layers. Ideally, these layers fulfill their desired task (i.e., induce a sufficiently high internal electric field, ensure a good electric contact, and passivate the interfaces of the absorber) without absorbing light. Usually this leads to a trade-off in which a higher transparency can only be realized at the expense of the layer's ability to properly fulfill its task. One alternative approach is to use hydrogenated microcrystalline silicon oxide (μc-SiOx:H), a mixture of microcrystalline silicon and amorphous silicon (sub)oxide. The crystalline Si regions allow charge transport, while the oxide matrix maintains a high transparency. To date, it is still unclear how in detail the oxygen content influences the electronic structure of the μc-SiOx:H mixed phase material. To address this question, we have studied the chemical and electronic structure of the μc-SiOx:H (0 0.5, we observe a pronounced decrease of Si 3s - Si 3p hybridization in favor of Si 3p - O 2p hybridization in the upper valence band. This coincides with a significant increase of the material's resistivity, possibly indicating the breakdown of the conducting crystalline Si network. Silicon oxide layers with a thickness of several hundred nanometres were deposited in a PECVD (plasma-enhanced chemical vapor deposition) multi chamber system

  19. Stabilized efficiency of stacked a-Si solar cell; Sekisogata a-Si taiyo denchi no anteika koritsu

    Energy Technology Data Exchange (ETDEWEB)

    Takahisa, K; Kojima, T; Nakamura, K; Koyanagi, T; Yanagisawa, T [Electrotechnical Laboratory, Tsukuba (Japan)

    1997-11-25

    Different types of tests combining light and temperature were carried out in a laboratory on predicting long-term performance of stacked amorphous silicon solar cells. Cell terminals were left open, xenon was used as an irradiation light source, and cell temperature was controlled within {+-} 2 degC of the setting. The result of the experiment may be summarized as follows: with regard to the deterioration characteristics, the speed in which the efficiency changes reached a maximum within 10 hours, and thereafter the change has slowed down gradually in the case of temperature at 50 degC; in the case of 25 degC, the maximization is reached between 500 and 1000 hours; the stabilization efficiency turns out to be a pessimistic value according to the saturated value derived from an experimental expression, hence the value would have to be expressed by specifying cell temperatures, light intensities and elapsed time; the minimum value of seasonal variation may be estimated at about 85% as a pessimistic value; for recovery characteristics, the saturated value for the recovery tends to become lower as the lower the value immediately before the recovery; and if the light intensity is varied, the deterioration characteristic shifts to that at an individual light intensity. 4 refs., 11 figs., 2 tabs.

  20. Dependence of open-circuit voltage of SnO2-nSi solar cells; SnO2-nSi taiyo denchi no sanka ondo menhoi izonsei

    Energy Technology Data Exchange (ETDEWEB)

    Shinoda, S; Shimizu, A; Yano, K; Kasuga, M [Yamanashi University, Yamanashi (Japan). Faculty of Engineering

    1997-11-25

    Although metal(or semiconductor)-semiconductor solar cells, SnO2-nSi solar cell for example, are superior in cost and efficiency, its barrier height and open-circuit voltage V(oc) are lower than those of p-n junctions. To improve these defects, study was made on the dependence of V(oc) on oxidation temperature and surface orientation using various solar cells prepared from (100)Si and (111)Si under various oxidation conditions. As a result, the density of surface states increases with a decrease in oxidation temperature of Si substrates, resulting in an increase in diode factor and V(oc). In this case, since oxide films are extremely thin and contribution of non-terminated bonds is large in the initial oxidation stage, the quantity of dangling bonds is larger in (100) plane than (111) plane, resulting in an increase in diode factor and V(oc). Since the surface energy level (the degree of electrons dominated by acceptor-like surface state from this level to the top of a valence band) of (100) Si is lower than that of (111) Si, the effective barrier height and V(oc) increase. 28 refs., 6 figs., 2 tabs.

  1. Studying the effect of spectral variations intensity of the incident solar radiation on the Si solar cells performance

    Directory of Open Access Journals (Sweden)

    Ahmed Elsayed Ghitas

    2012-12-01

    Full Text Available Solar spectral variation is important in characterization of photovoltaic devices. We present results of an experimental investigation of the effects of the daily spectral variation on the device performance of multicrystalline silicon photovoltaic module. The investigation concentrate on the analysis of outdoor solar spectral measurements carried out at 1 min intervals on clear sky days. Short circuit current and open circuit voltage have been measured to describe the module electrical performance. We have shown that the shift in the solar spectrum towards infrared has a negative impact on the device performance of the module. The spectral bands in the visible region contribute more to the short circuit current than the bands in the infrared region while the ultraviolet region contributes least. The quantitative effect of the spectral variation on the performance of the photovoltaic module is reflected on their respective device performance parameters. The decrease in the visible and the increase in infrared of the radiation spectra account for the decreased current collection and hence power of the module.

  2. Enhanced photovoltaic performance of ultrathin Si solar cells via semiconductor nanocrystal sensitization: energy transfer vs. optical coupling effects.

    Science.gov (United States)

    Hoang, Son; Ashraf, Ahsan; Eisaman, Matthew D; Nykypanchuk, Dmytro; Nam, Chang-Yong

    2016-03-21

    Excitonic energy transfer (ET) offers exciting opportunities for advances in optoelectronic devices such as solar cells. While recent experimental attempts have demonstrated its potential in both organic and inorganic photovoltaics (PVs), what remains to be addressed is quantitative understanding of how different ET modes contribute to PV performance and how ET contribution is differentiated from the classical optical coupling (OC) effects. In this study, we implement an ET scheme using a PV device platform, comprising CdSe/ZnS nanocrystal energy donor and 500 nm-thick ultrathin Si acceptor layers, and present the quantitative mechanistic description of how different ET modes, distinguished from the OC effects, increase the light absorption and PV efficiency. We find that nanocrystal sensitization enhances the short circuit current of ultrathin Si solar cells by up to 35%, of which the efficient ET, primarily driven by a long-range radiative mode, contributes to 38% of the total current enhancement. These results not only confirm the positive impact of ET but also provide a guideline for rationally combining the ET and OC effects for improved light harvesting in PV and other optoelectronic devices.

  3. Towards III-V solar cells on Si: Improvement in the crystalline quality of Ge-on-Si virtual substrates through low porosity porous silicon buffer layer and annealing

    International Nuclear Information System (INIS)

    Calabrese, Gabriele; Baricordi, Stefano; Bernardoni, Paolo; Fin, Samuele; Guidi, Vincenzo; Vincenzi, Donato

    2014-01-01

    A comparison between the crystalline quality of Ge grown on bulk Si and on a low porosity porous Si (pSi) buffer layer using low energy plasma enhanced chemical vapor deposition is reported. Omega/2Theta coupled scans around the Ge and Si (004) diffraction peaks show a reduction of the Ge full-width at half maximum (FWHM) of 22.4% in presence of the pSi buffer layer, indicating it is effective in improving the epilayer crystalline quality. At the same time atomic force microscopy analysis shows an increase in root means square roughness for Ge grown on pSi from 38.5 nm to 48.0 nm, as a consequence of the larger surface roughness of pSi compared to bulk Si. The effect of 20 minutes vacuum annealing at 580°C is also investigated. The annealing leads to a FWHM reduction of 23% for Ge grown on Si and of 36.5% for Ge on pSi, resulting in a FWHM of 101 arcsec in the latter case. At the same time, the RMS roughness is reduced of 8.8% and of 46.5% for Ge grown on bulk Si and on pSi, respectively. The biggest improvement in the crystalline quality of Ge grown on pSi with respect to Ge grown on bulk Si observed after annealing is a consequence of the simultaneous reorganization of the Ge epilayer and the buffer layer driven by energy minimization. A low porosity buffer layer can thus be used for the growth of low defect density Ge on Si virtual substrates for the successive integration of III-V multijunction solar cells on Si. The suggested approach is simple and fast –thus allowing for high throughput-, moreover is cost effective and fully compatible with subsequent wafer processing. Finally it does not introduce new chemicals in the solar cell fabrication process and can be scaled to large area silicon wafers

  4. Solar energy: photovoltaics

    International Nuclear Information System (INIS)

    Goetzberger, A.; Voss, B.; Knobloch, J.

    1994-01-01

    This textbooks covers the following topics: foundations of photovoltaics, solar energy, P-N junctions, physics of solar cells, high-efficiency solar cells, technology of Si solar cells, other solar cells, photovoltaic applications. (orig.)

  5. Development of Hydrogenated Microcrystalline Silicon-Germanium Alloys for Improving Long-Wavelength Absorption in Si-Based Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Yen-Tang Huang

    2014-01-01

    Full Text Available Hydrogenated microcrystalline silicon-germanium (μc-Si1-xGex:H alloys were developed for application in Si-based thin-film solar cells. The effects of the germane concentration (RGeH4 and the hydrogen ratio (RH2 on the μc-Si1-xGex:H alloys and the corresponding single-junction thin-film solar cells were studied. The behaviors of Ge incorporation in a-Si1-xGex:H and μc-Si1-xGex:H were also compared. Similar to a-Si1-xGex:H, the preferential Ge incorporation was observed in μc-Si1-xGex:H. Moreover, a higher RH2 significantly promoted Ge incorporation for a-Si1-xGex:H, while the Ge content was not affected by RH2 in μc-Si1-xGex:H growth. Furthermore, to eliminate the crystallization effect, the 0.9 μm thick absorbers with a similar crystalline volume fraction were applied. With the increasing RGeH4, the accompanied increase in Ge content of μc-Si1-xGex:H narrowed the bandgap and markedly enhanced the long-wavelength absorption. However, the bias-dependent EQE measurement revealed that too much Ge incorporation in absorber deteriorated carrier collection and cell performance. With the optimization of RH2 and RGeH4, the single-junction μc-Si1-xGex:H cell achieved an efficiency of 5.48%, corresponding to the crystalline volume fraction of 50.5% and Ge content of 13.2 at.%. Compared to μc-Si:H cell, the external quantum efficiency at 800 nm had a relative increase by 33.1%.

  6. Gradient SiNO anti-reflective layers in solar selective coatings

    Science.gov (United States)

    Ren, Zhifeng; Cao, Feng; Sun, Tianyi; Chen, Gang

    2017-08-01

    A solar selective coating includes a substrate, a cermet layer having nanoparticles therein deposited on the substrate, and an anti-reflection layer deposited on the cermet layer. The cermet layer and the anti-reflection layer may each be formed of intermediate layers. A method for constructing a solar-selective coating is disclosed and includes preparing a substrate, depositing a cermet layer on the substrate, and depositing an anti-reflection layer on the cermet layer.

  7. Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2 solar cells.

    Science.gov (United States)

    Vermang, Bart; Wätjen, Jörn Timo; Fjällström, Viktor; Rostvall, Fredrik; Edoff, Marika; Kotipalli, Ratan; Henry, Frederic; Flandre, Denis

    2014-10-01

    Reducing absorber layer thickness below 500 nm in regular Cu(In,Ga)Se 2 (CIGS) solar cells decreases cell efficiency considerably, as both short-circuit current and open-circuit voltage are reduced because of incomplete absorption and high Mo/CIGS rear interface recombination. In this work, an innovative rear cell design is developed to avoid both effects: a highly reflective rear surface passivation layer with nano-sized local point contact openings is employed to enhance rear internal reflection and decrease the rear surface recombination velocity significantly, as compared with a standard Mo/CIGS rear interface. The formation of nano-sphere shaped precipitates in chemical bath deposition of CdS is used to generate nano-sized point contact openings. Evaporation of MgF 2 coated with a thin atomic layer deposited Al 2 O 3 layer, or direct current magnetron sputtering of Al 2 O 3 are used as rear surface passivation layers. Rear internal reflection is enhanced substantially by the increased thickness of the passivation layer, and also the rear surface recombination velocity is reduced at the Al 2 O 3 /CIGS rear interface. (MgF 2 /)Al 2 O 3 rear surface passivated ultra-thin CIGS solar cells are fabricated, showing an increase in short circuit current and open circuit voltage compared to unpassivated reference cells with equivalent CIGS thickness. Accordingly, average solar cell efficiencies of 13.5% are realized for 385 nm thick CIGS absorber layers, compared with 9.1% efficiency for the corresponding unpassivated reference cells.

  8. Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2 solar cells

    Science.gov (United States)

    Vermang, Bart; Wätjen, Jörn Timo; Fjällström, Viktor; Rostvall, Fredrik; Edoff, Marika; Kotipalli, Ratan; Henry, Frederic; Flandre, Denis

    2014-01-01

    Reducing absorber layer thickness below 500 nm in regular Cu(In,Ga)Se2 (CIGS) solar cells decreases cell efficiency considerably, as both short-circuit current and open-circuit voltage are reduced because of incomplete absorption and high Mo/CIGS rear interface recombination. In this work, an innovative rear cell design is developed to avoid both effects: a highly reflective rear surface passivation layer with nano-sized local point contact openings is employed to enhance rear internal reflection and decrease the rear surface recombination velocity significantly, as compared with a standard Mo/CIGS rear interface. The formation of nano-sphere shaped precipitates in chemical bath deposition of CdS is used to generate nano-sized point contact openings. Evaporation of MgF2 coated with a thin atomic layer deposited Al2O3 layer, or direct current magnetron sputtering of Al2O3 are used as rear surface passivation layers. Rear internal reflection is enhanced substantially by the increased thickness of the passivation layer, and also the rear surface recombination velocity is reduced at the Al2O3/CIGS rear interface. (MgF2/)Al2O3 rear surface passivated ultra-thin CIGS solar cells are fabricated, showing an increase in short circuit current and open circuit voltage compared to unpassivated reference cells with equivalent CIGS thickness. Accordingly, average solar cell efficiencies of 13.5% are realized for 385 nm thick CIGS absorber layers, compared with 9.1% efficiency for the corresponding unpassivated reference cells. PMID:26300619

  9. Enhanced photovoltaic performance and long-term stability of dye-sensitized solar cells by incorporating SiO{sub 2} nanoparticles in binary ionic liquid electrolytes

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hsin-Fang; Wu, Jhih-Lin; Hsu, Po-Ya [Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan, ROC (China); Tung, Yung-Liang [Energy and Environment Research Laboratories, Industrial Technology Research Institute, Hsinchu 30013, Taiwan, ROC (China); Ouyang, Fan-Yi [Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan, ROC (China); Kai, Ji-Jung, E-mail: jjkai@ess.nthu.edu.tw [Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan, ROC (China)

    2013-02-01

    Hydrophilic SiO{sub 2} nanoparticles in a binary ionic liquid (bi-IL) consisting of 1-propyl-3-methylimidazolium iodide (PMII) and 1-ethyl-3-methyl-imidazolium dicyanimide (EMIDCA) facilitated electron transfer and solidified the electrolyte for a dye-sensitized solar cell (DSC). We investigated the dependence of charge transport and photovoltaic performance on the composition of bi-IL electrolytes with varied ratio of SiO{sub 2} nanoparticles. The electrochemical impedance spectra revealed a decreased resistance to charge transfer at the Pt counter electrode (R{sub ct1}) when SiO{sub 2} (up to 2.0 wt.%) was added, improving the photovoltaic parameters. The DSC based on a TiO{sub 2} nanocrystalline film (thickness 14.2 μm) with a composite ionic gel electrolyte of EMIDCA/PMII bi-IL (33 vol.% of EMIDCA) incorporating SiO{sub 2} (2 wt.%) exhibited a power conversion efficiency of 5.28% under simulated solar illumination (AM 1.5 G, 100 mW cm{sup −} {sup 2}). The durability of DSC with a SiO{sub 2} solidified electrolyte was superior to that of a liquid one, exhibiting good stability at 60 °C in darkness during an accelerated test for 1000 h. - Highlights: ► SiO{sub 2} nanoparticles were introduced in a binary ionic liquid electrolyte. ► Effect of various ratios of SiO{sub 2} nanoparticles in gel electrolytes was studied. ► Mechanism of charge transfer with addition of SiO{sub 2} nanoparticles was discussed. ► An enhanced solar to electric energy conversion efficiency of 5.28% was achieved. ► Thermal stability of a quasi-solid state dye-sensitized solar cell was improved.

  10. A buffer-layer/a-SiO{sub x}:H(p) window-layer optimization for thin film amorphous silicon based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Park, Jinjoo; Dao, Vinh Ai [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Shin, Chonghoon [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Hyeongsik [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Minbum; Jung, Junhee [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Doyoung [School of Electricity and Electronics, Ulsan College West Campus, Ulsan 680-749 (Korea, Republic of); Yi, Junsin, E-mail: yi@yurim.skku.ac.kr [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2013-11-01

    Amorphous silicon based (a-Si:H-based) solar cells with a buffer-layer/boron doped hydrogenated amorphous silicon oxide (a-SiO{sub x}:H(p)) window-layer were fabricated and investigated. In the first part, in order to reduce the Schottky barrier height at the fluorine doped tin oxide (FTO)/a-SiO{sub x}:H(p) window-layer heterointerface, we have used buffer-layer/a-SiO{sub x}:H(p) for the window-layer, in which boron doped hydrogenated amorphous silicon (a-Si:H(p)) or boron doped microcrystalline silicon (μc-Si:H(p)) is introduced as a buffer layer between the a-SiO{sub x}:H(p) and FTO of the a-Si:H-based solar cells. The a-Si:H-based solar cell using a μc-Si:H(p) buffer-layer shows the highest efficiency compared to the optimized bufferless, and a-Si:H(p) buffer-layer in the a-Si:H-based solar cells. This highest performance was attributed not only to the lower absorption of the μc-Si:H(p) buffer-layer but also to the lower Schottky barrier height at the FTO/window-layer interface. Then, we present the dependence of the built-in potential (V{sub bi}) and blue response of the devices on the inversion of activation energy (ξ) of the a-SiO{sub x}:H(p), in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. The enhancement of both V{sub bi} and blue response is observed, by increasing the value of ξ. The improvement of V{sub bi} and blue response can be ascribed to the enlargement of the optical gap of a-SiO{sub x}:H(p) films in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. Finally, the conversion efficiency was increased by 22.0%, by employing μc-Si:H(p) as a buffer-layer and raising the ξ of the a-SiO{sub x}:H(p), compared to the optimized bufferless case, with a 10 nm-thick a-SiO{sub x}:H(p) window-layer. - Highlights: • Low Schottky barrier height benefits fill factor, and open-circuit voltage (V{sub oc}). • High band gap is beneficial for short-circuit current density (J{sub sc}). • Boron doped microcrystalline silicon is a suitable buffer-layer for

  11. Evaluation of the annual electric energy output of an a-Si:H solar cellin various regions of the CIS countries

    International Nuclear Information System (INIS)

    Kryuchenko, Yu.V.; Sachenko, A.V.; Bobyl, A.V.; Kostylyov, V.P.; Sokolovskyi, I.O.; Terukov, E.I.; Tokmoldin, N.; Tokmoldin, S. Zh.; Smirnov, A.V.

    2014-01-01

    We have calculated annual (i.e., for each day of the year) daytime dependences of the electric power output per unit area of an a-Si:H solar cell (SC) at latitudes 45°N, 50°N, 55°N, 60°N and at certain geographical points of Russia, Kazakhstan, Ukraine and Belarus. The calculations were based on a rigorous theoretical model, which allows to determine photoconversion efficiency, optimal electric power output and other photovoltaic electrical characteristics at arbitrary angles of solar irradiance incidence on an a-Si:H-based SC. Parameters of the a-Si:H SC under consideration provide photoconversion efficiency of 10% at 12:00 noon on equinox day at the 45°N latitude despite small total thickness of 0.7 µm of the a-Si:H SC structure up to the rear contact. Normalization of the obtained results by maximal values enables one to infer respective time dependencies for other types of SCs. In combination with the data on average numbers of sunny days per year (or average annual sunshine hours) for certain geographical regions, this provides a way for understanding the feasibility of solar electricity generation in these regions. Based on this study, we identify regions of Russia, Kazakhstan and Ukraine, for which electricity generation exceeds the average values by over 30%. - Highlights: • We model solar power generation from an amorphous silicon solar cell at moderate latitudes from 45°N to 60°N. • We model solar power generation from an amorphous silicon solar cell as applied to Belarus, Kazakhstan, Russia and Ukraine. • The calculations are based on our rigorous model taking into account atmospheric conditions at a given location. • Annual time-dependency of power output and optimal values of solar energy generated at the various locations are determined

  12. Triple Layer Antireflection Design Concept for the Front Side of c-Si Heterojunction Solar Cell Based on the Antireflective Effect of nc-3C-SiC:H Emitter Layer

    Directory of Open Access Journals (Sweden)

    Erick Omondi Ateto

    2016-01-01

    Full Text Available We investigated the antireflective (AR effect of hydrogenated nanocrystalline cubic silicon carbide (nc-3C-SiC:H emitter and its application in the triple layer AR design for the front side of silicon heterojunction (SHJ solar cell. We found that the nc-3C-SiC:H emitter can serve both as an emitter and antireflective coating for SHJ solar cell, which enables us to realize the triple AR design by adding one additional dielectric layer to normally used SHJ structure with a transparent conductive oxide (TCO and an emitter layer. The optimized SHJ structure with the triple layer AR coating (LiF/ITO/nc-3C-SiC:H exhibit a short circuit current density (Jsc of 38.65 mA/cm2 and lower reflectivity of about 3.42% at wavelength range of 300 nm–1000 nm.

  13. Photoluminescence due to early stage of oxygen precipitation in multicrystalline Si for solar cells

    Science.gov (United States)

    Higuchi, Fumito; Tajima, Michio; Ogura, Atsushi

    2017-07-01

    To analyze the early stage of oxygen precipitation in n-type multicrytalline Si, the spectral change of photoluminescence (PL) induced by thermal treatment at 450-650 °C was investigated in relation to the changes in excess donor and interstitial oxygen concentrations. We observed the characteristic PL bands in the near-band-edge region and sharp lines in the deep-level region in correspondence with the generation of thermal donors and new donors. The observed PL spectral variation is essentially the same as that in Czochralski-grown Si annealed at 450-650 °C.

  14. Using a New Infrared Si X Coronal Emission Line for Discriminating between Magnetohydrodynamic Models of the Solar Corona During the 2006 Solar Eclipse

    Science.gov (United States)

    Dima, Gabriel I.; Kuhn, Jeffrey R.; Mickey, Don; Downs, Cooper

    2018-01-01

    During the 2006 March 29 total solar eclipse, coronal spectropolarimetric measurements were obtained over a 6 × 6 R ⊙ field of view with a 1–2 μm spectral range. The data yielded linearly polarized measurements of the Fe XIII 1.075 μm, He I 1.083 μm, and for the first time, of the Si X 1.430 μm emission lines. To interpret the measurements, we used forward-integrated synthetic emission from two magnetohydrodynamic models for the same Carrington rotation with different heating functions and magnetic boundary conditions. Observations of the Fe XIII 1.075/Si X 1.430 line ratio allowed us to discriminate between two models of the corona, with the observations strongly favoring the warmer model. The observed polarized amplitudes for the Si X 1.430 μm line are around 7%, which is three times higher than the predicted values from available atomic models for the line. This discrepancy indicates a need for a closer look at some of the model assumptions for the collisional coefficients, as well as new polarized observations of the line to rule out any unknown systematic effect in the present data. All but two near-limb fibers show correlated bright He I 1.083 μm and H I 1.282 μm emission, which likely indicates cool prominence emission that is non-localized by the strongly defocused optics. One of the distant fibers located at 1.5 R ⊙ detected a weak He I 1.083 μm intensity signal consistent with previous eclipse measurements around 3 × 10‑7 {B}ȯ . However, given the limitations of these observations, it is not possible to completely remove contamination that is due to emission from prominence material that is not obscured by the lunar limb.

  15. Temperature dependence of the early degradation in a-Si solar cells; Amorphous Si taiyo denchi no shoki rekka no ondo izonsei

    Energy Technology Data Exchange (ETDEWEB)

    Takahisa, K; Kojima, T; Nakamura, K; Koyanagi, T; Yanagisawa, T [Electrotechnical Laboratory, Tsukuba (Japan)

    1997-11-25

    Discussions were given on early degradation in up to about ten minutes in amorphous silicon solar cells. The experiment has used a model cell of single junction layer for power use with a Glass/ITO/P-i-n:a-Si/Al structure. Test samples were annealed at 130 degC for 30 minutes to eliminate hysteresis of degradation during storage. Xenon was used as an irradiation light source, and the temperatures were varied from 0 to 100 degC and the measurement time was set to 0.1 to 500 minutes. The result of the experiment may be summarized as follows: with regard to time-based degradation pattern for conversion efficiency, the tilt of a pattern to express degradation rate varies with temperature conditions, and changes in 10 to 20 minutes of light irradiation as a boundary; in long-term degradation after 20 minutes, the higher the environmental temperature, the lower the degradation is suppressed, but the rate of initial degradation up to about 10 minutes is higher as the higher the temperature; and the degradation rate increases as the higher the temperature in the initial degradation of about 10 minutes, whereas, corresponding to this fact, it is estimated that a phenomenon is involved, in which carrier recombination defect may increase. 4 refs., 7 figs., 1 tab.

  16. Transparent Patch Antenna on a-Si Thin Film Glass Solar Module

    OpenAIRE

    Roo Ons, Maria; Shynu, S.; Ammann, Max; McCormack, Sarah; Norton, Brian

    2011-01-01

    An optically transparent microstrip patch mounted on the surface of a commercially available solar module is proposed. The patch comprises a thin sheet of clear polyester with a conductive coating. The amorphous silicon solar cells in the module are used as both photovoltaic generator and antenna ground plane. The proposed structure provides a peak gain of 3.96 dBi in the 3.4-3.8 GHz range without significantly compromising the light transmission in the module. A comparison between copper and...

  17. Atomic-layer deposited passivation schemes for c-Si solar cells

    NARCIS (Netherlands)

    van de Loo, B.W.H.; Macco, B.; Melskens, J.; Verheijen, M.A.; Kessels, W.M.M.E.

    2016-01-01

    A review of recent developments in the field of passivation of c-Si surfaces is presented, with a particular focus on materials that can be prepared by atomic layer deposition (ALD). Besides Al2O3, various other novel passivation schemes have recently been developed, such as Ga2O3, Ta2O5,

  18. Optimal enhancement in conversion efficiency of crystalline Si solar cells using inverse opal photonic crystals as back reflectors

    International Nuclear Information System (INIS)

    Chaouachi, A; M’nif, A; Hamzaoui, A H; Chtourou, R

    2015-01-01

    The effect of using inverse opal photonic crystals as back reflectors on the power conversion efficiency of c-Si solar cells is investigated. The reflection spectra of inverse opal photonic crystals with different diameters of air spheres are simulated using the finite difference time domain (FDTD) method. The reflection peaks are correlated with photonic band gaps present in the photonic band gap diagram. Significant improvement in the optical absorption of the crystalline silicon layer is recorded when inverse opal photonic crystals are considered. Physical mechanisms which may contribute to the enhancement of the light absorption are underlined. With higher short-circuit current enhancement possible, and with no corresponding degradation in open-circuit voltage V oc or the fill factor, the power conversion efficiency is increased significantly when inverse opal photonic crystals are used as back reflectors with optimized diameter of air spheres. (paper)

  19. Impact of one-dimensional photonic crystal back reflector in thin-film c-Si solar cells on efficiency

    Science.gov (United States)

    Jalali, Tahmineh

    2018-05-01

    In this work, the effect of one-dimensional photonic crystal on optical absorption, which is implemented at the back side of thin-film crystalline silicon (c-Si) solar cells, is extensively discussed. The proposed structure acts as a Bragg reflector which reflects back light to the active layer as well as nanograting which couples the incident light to enhance optical absorption. To understand the optical mechanisms responsible for the enhancement of optical absorption, quantum efficiency and current density for all structures are calculated and the effect of influential parameters, such as grating period is investigated. The results confirm that our proposed structure have a great deal for substantial efficiency enhancement in a broad range from 400 to 1100 nm.

  20. Highly Conformal Ni Micromesh as a Current Collecting Front Electrode for Reduced Cost Si Solar Cell

    DEFF Research Database (Denmark)

    Gupta, Nikita; Rao, K. D. M.; Gupta, Ritu

    2017-01-01

    deposition of Ni wire network on corrugated solar cell, a short circuit current of 33.28 mA/cm2 was obtained in comparison to 20.53 mA/cm2 without the network electrode. On comparing the efficiency with the conventional cells with screen printed electrodes, a 20% increment in efficiency has been observed...

  1. Spatially resolved analysis and minimization of resistive losses in high-efficiency Si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Altermatt, P.P.; Wang, A.; Zhao, J.; Robinson, S.J.; Bowden, S.; Green, M.A. [New South Wales Univ., Kensington, NSW (Australia). Centre for Photovoltaic Devices and Systems; Heiser, G. [New South Wales Univ., Sydney, NSW (Australia). School of Computer Science and Engineering; Aberle, A.G. [Institut fuer Solarenergieforschung (ISFH), Emmerthal (Germany)

    1996-11-01

    This paper presents an improved method for measuring the total lumped series resistance (R{sub s}) of high-efficiency solar cells. Since this method greatly minimizes the influence of non-linear recombination processes on the measured R{sub s} values, it is possible to determine R{sub s} as a function of external current density over a wide range of illumination levels with a significantly improved level of accuracy. This paper furthermore explains how resistive losses in the emitter, the base, the metal/silicon contacts and the front metal grid can be separately determined by combining measurements and multi-dimensional numerical simulations. A novel combination of device simulation and circuit simulation is introduced in order to simulate complete 2 x 2 cm s sq. P:ERL (`passivated emitter and rear locally-diffused`) silicon solar cells. These computer simulations provide improved insight into the dynamics of resistive losses, and thus allow new strategies for the optimization of resistive losses to be developed. The predictions have been experimentally verified with PERL cells, whose resistive losses were reduced to approximately half of their previous values, contributing to a new efficiency world record (24.0%) for silicon solar cells under terrestrial illumination. The measurement techniques and optimization strategies presented here can be applied to most other types of solar cells, and to materials other than silicon. (Author)

  2. Synthesis and optical characterization of C-SiO2 and C-NiO sol-gel composite films for use as selective solar absorbers

    CSIR Research Space (South Africa)

    Makiwa, G

    2008-08-01

    Full Text Available The authors present a cheaper and environmentally friendly method to fabricate efficient spectrally selective solar absorber materials. The sol-gel technique was used to fabricate carbon-silica (C-SiO2) and carbon-nickel oxide (C-NiO) composite...

  3. Interfacial micropore defect formation in PEDOT:PSS-Si hybrid solar cells probed by TOF-SIMS 3D chemical imaging.

    Science.gov (United States)

    Thomas, Joseph P; Zhao, Liyan; Abd-Ellah, Marwa; Heinig, Nina F; Leung, K T

    2013-07-16

    Conducting p-type polymer layers on n-type Si have been widely studied for the fabrication of cost-effective hybrid solar cells. In this work, time-of-flight secondary ion mass spectrometry (TOF-SIMS) is used to provide three-dimensional chemical imaging of the interface between poly(3,4-ethylene-dioxythiophene):polystyrenesulfonate (PEDOT:PSS) and SiOx/Si in a hybrid solar cell. To minimize structural damage to the polymer layer, an Ar cluster sputtering source is used for depth profiling. The present result shows the formation of micropore defects in the interface region of the PEDOT:PSS layer on the SiOx/Si substrate. This interfacial micropore defect formation becomes more prominent with increasing thickness of the native oxide layer, which is a key device parameter that greatly affects the hybrid solar cell performance. Three-dimensional chemical imaging coupled with Ar cluster ion sputtering has therefore been demonstrated as an emerging technique for probing the interface of this and other polymer-inorganic systems.

  4. Dielectric passivation schemes for high efficiency n-type c-si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Saynova, D.S.; Romijn, I.G.; Cesar, I.; Lamers, M.W.P.E.; Gutjahr, A. [ECN Solar Energy, P.O. Box 1, NL-1755 ZG Petten (Netherlands); Dingemans, G. [ASM, Kapeldreef 75, B-3001 Leuven (Belgium); Knoops, H.C.M.; Van de Loo, B.W.H.; Kessels, W.M.M. [Eindhoven University of Technology, Department of Appl. Physics, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Siarheyeva, O.; Granneman, E. [Levitech BV, Versterkerstraat 10, 1322AP Almere (Netherlands); Venema, P.R.; Vlooswijk, A.H.G. [Tempress Systems BV, Radeweg 31, 8171 Vaassen (Netherlands); Gautero, L.; Borsa, D.M.

    2013-10-15

    We investigate the impact of different dielectric layers and stacks on the passivation properties of boron doped p{sup ++}-emitters and phosphorous doped n{sup +}-BSFs which are relevant for competitive n-type cell conversion efficiencies. The applied passivation schemes are associated with specific properties at c-Si/dielectric interface and functional mechanisms. In this way we aim to gain a deeper understanding of the passivation mechanism of the differently doped fields within the n-type cells and identify options to further improve the efficiency. The deposition technologies in our study comprise industrial PECVD systems and/or ALD both in industrial and lab scale configurations. In case of p{sup ++}-emitters the best results were achieved by combining field effect and chemical passivation using stacks of low temperature wet chemical oxide and thin ALD-AlOx capped with PECVD-SiNx. The corresponding Implied Voc values were of about (673{+-}2) mV and J{sub 0} of (68{+-}2) fA/cm{sup 2}. For the n{sup +}-BSF passivation the passivation scheme based on SiOx with or without additional AlOx film deposited by a lab scale temporal ALD processes and capped with PECVD-SiNx layer yielded a comparable Implied Voc of (673{+-}2) mV, but then corresponding to J{sub 0} value of (80{+-}15) fA/cm{sup 2}. This passivation scheme is mainly based on the chemical passivation and was also suitable for p{sup ++} surface. This means that we have demonstrated that for n-Pasha cells both the emitter and BSF can be passivated with the same type of passivation that should lead to > 20% cell efficiency. This offers the possibility for transfer this passivation scheme to advanced cell architectures, such as IBC.

  5. Radiation effect on the optical and electrical properties of CdSe(In)/p-Si heterojunction photovoltaic solar cells

    Institute of Scientific and Technical Information of China (English)

    M. Ashry; S. Fares

    2012-01-01

    The efficiency and radiation resistance of solar cells are graded.They are then fabricated in the form of n-CdeSe(In)/p-Si heterojunction cells by electron beam evaporation of a stoichiomteric mixture of CdSe and In to make a thin film on a p-Si single crystal wafer with a thickness of 100 μm and a resistivity of ~ 1.5Ω·cm at a temperature of 473 K.The short-circuit current density (jsc),open-circuit voltage (Voc),fill factor (ff) and conversion efficiency (η) under 100 mW/cm2 (AM1) intensity,are 20 mA/cm2,0.49 V,0.71 and 6% respectively.The cells were exposed to different electron doses (electron beam accelerator of energy 1.5 MeV,and beam intensity 25 mA).The cell performance parameters are measured and discussed before and after gamma and electron beam irradiation.

  6. Inductively and capacitively coupled plasmas at interface: A comparative study towards highly efficient amorphous-crystalline Si solar cells

    Science.gov (United States)

    Guo, Yingnan; Ong, Thiam Min Brian; Levchenko, I.; Xu, Shuyan

    2018-01-01

    A comparative study on the application of two quite different plasma-based techniques to the preparation of amorphous/crystalline silicon (a-Si:H/c-Si) interfaces for solar cells is presented. The interfaces were fabricated and processed by hydrogen plasma treatment using the conventional plasma-enhanced chemical vacuum deposition (PECVD) and inductively coupled plasma chemical vapour deposition (ICP-CVD) methods The influence of processing temperature, radio-frequency power, treatment duration and other parameters on interface properties and degree of surface passivation were studied. It was found that passivation could be improved by post-deposition treatment using both ICP-CVD and PECVD, but PECVD treatment is more efficient for the improvement on passivation quality, whereas the minority carrier lifetime increased from 1.65 × 10-4 to 2.25 × 10-4 and 3.35 × 10-4 s after the hydrogen plasma treatment by ICP-CVD and PECVD, respectively. In addition to the improvement of carrier lifetimes at low temperatures, low RF powers and short processing times, both techniques are efficient in band gap adjustment at sophisticated interfaces.

  7. Photocarrier radiometry for predicting the degradation of electrical parameters of monocrystalline silicon (c-Si) solar cell irradiated by 100 KeV proton beams

    Energy Technology Data Exchange (ETDEWEB)

    Song, P. [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Liu, J.Y., E-mail: ljywlj@hit.edu.cn [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); State Key Laboratory of Robotics and System (HIT), Harbin 150001 (China); Yuan, H.M.; Oliullah, Md.; Wang, F. [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Wang, Y., E-mail: songpengkevin@126.com [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); State Key Laboratory of Robotics and System (HIT), Harbin 150001 (China)

    2016-09-15

    In this study, the monocrystalline silicon (c-Si) solar cell irradiated by 100 KeV proton beams at various fluences is investigated. A one-dimensional two-layer carrier density wave model has been developed to estimate the minority carrier lifetime of n-region and p-region of the non-irradiated c-Si solar cell by best fitting with the experimental photocarrier radiometry (PCR) signal (the amplitude and the phase). Furthermore, the lifetime is used to determine the initial defect density of the quasi-neutral region (QNR) of the solar cell to predict its I–V characteristics. The theoretically predicted short-circuit current density (J{sub sc}), and open-circuit voltage (V{sub oc}) of the non-irradiated samples are in good agreement with experiment. Then a three-region defect distribution model for the c-Si solar cell irradiated by proton beams is carried out to describe the defect density distribution according to Monte Carlo simulation results and the initial defect density of the non-irradiated sample. Finally, we find that the electrical measurements of J{sub sc} and V{sub oc} of the solar cells irradiated at different fluences using 100 KeV proton beams are consistent with the PCR predicting results.

  8. Photocarrier radiometry for predicting the degradation of electrical parameters of monocrystalline silicon (c-Si) solar cell irradiated by 100 KeV proton beams

    International Nuclear Information System (INIS)

    Song, P.; Liu, J.Y.; Yuan, H.M.; Oliullah, Md.; Wang, F.; Wang, Y.

    2016-01-01

    In this study, the monocrystalline silicon (c-Si) solar cell irradiated by 100 KeV proton beams at various fluences is investigated. A one-dimensional two-layer carrier density wave model has been developed to estimate the minority carrier lifetime of n-region and p-region of the non-irradiated c-Si solar cell by best fitting with the experimental photocarrier radiometry (PCR) signal (the amplitude and the phase). Furthermore, the lifetime is used to determine the initial defect density of the quasi-neutral region (QNR) of the solar cell to predict its I–V characteristics. The theoretically predicted short-circuit current density (J_s_c), and open-circuit voltage (V_o_c) of the non-irradiated samples are in good agreement with experiment. Then a three-region defect distribution model for the c-Si solar cell irradiated by proton beams is carried out to describe the defect density distribution according to Monte Carlo simulation results and the initial defect density of the non-irradiated sample. Finally, we find that the electrical measurements of J_s_c and V_o_c of the solar cells irradiated at different fluences using 100 KeV proton beams are consistent with the PCR predicting results.

  9. Development of Advanced Deposition Technology for Microcrystalline Si Based Solar Cells and Modules: Final Technical Report, 1 May 2002-31 July 2004

    Energy Technology Data Exchange (ETDEWEB)

    Li, Y. M.

    2004-12-01

    The key objective of this subcontract was to take the first steps to extend the radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) manufacturing technology of Energy Photovoltaics, Inc. (EPV), to the promising field of a-Si/nc-Si solar cell fabrication by demonstrating ''proof-of-concept'' devices of good efficiencies that previously were believed to be unobtainable in single-chamber reactors owing to contamination problems. A complementary goal was to find a new high-rate deposition method that can conceivably be deployed in large PECVD-type reactors. We emphasize that our goal was not to produce 'champion' devices of near-record efficiencies, but rather, to achieve modestly high efficiencies using a far simpler (cheaper) system, via practical processing methods and materials. To directly attack issues in solar-cell fabrication at EPV, the nc-Si thin films were studied almost exclusively in the p-i-n device configuration (as absorbers or i-layers), not as stand-alone films. Highly efficient, p-i-n type, nc-Si-based solar cells are generally grown on expensive, laboratory superstrates, such as custom ZnO/glass of high texture (granular surface) and low absorption. Also standard was the use of a highly effective back-reflector ZnO/Ag, where the ZnO can be surface-textured for efficient diffuse reflection. The high-efficiency ''champion'' devices made by the PECVD methods were invariably prepared in sophisticated (i.e., expensive), multi-chamber, or at least load-locked deposition systems. The electrode utilization efficiency, defined as the surface-area ratio of the powered electrode to that of the substrates, was typically low at about one (1:1). To evaluate the true potential of nc-Si absorbers for cost-competitive, commercially viable manufacturing of large-area PV modules, we took a more down-to-earth approach, based on our proven production of a-Si PV modules by a massively parallel batch

  10. High Performance of PEDOT:PSS/n-Si Solar Cells Based on Textured Surface with AgNWs Electrodes

    Science.gov (United States)

    Jiang, Xiangyu; Zhang, Pengbo; Zhang, Juan; Wang, Jilei; Li, Gaofei; Fang, Xiaohong; Yang, Liyou; Chen, Xiaoyuan

    2018-02-01

    Hybrid heterojunction solar cells (HHSCs) have gained extensive research and attention due to simple device structure and low-cost technological processes. Here, HHSCs are presented based on a highly transparent conductive polymer poly(3,4ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS) directly spin-coated on an n-type crystalline silicon with microscale surface textures, which are prepared by traditional chemical etching. We have studied interface properties between PEDOT:PSS and textured n-Si by varying coating conditions. Final power conversion efficiency (PCE) could arrive at 8.54% by these simple solution-based fabrication processes. The high conversion efficiency is attributed to the fully conformal contact between PEDOT:PSS film and textured silicon. Furthermore, the reflectance of the PEDOT:PSS layer on textured surface is analyzed by changing film thickness. In order to improve the performance of the device, silver nanowires were employed as electrodes because of its better optical transmittance and electrical conductivity. The highest PCE of 11.07% was achieved which displayed a 29.6% enhancement compared with traditional silver electrodes. These findings imply that the combination of PEDOT:PSS film and silver nanowire transparent electrodes pave a promising way for realizing high-efficiency and low-cost solar cells.

  11. Effect of Surface Morphology and Dispersion Media on the Properties of PEDOT:PSS/n-Si Hybrid Solar Cell Containing Functionalized Graphene

    Directory of Open Access Journals (Sweden)

    Pham Van Trinh

    2017-01-01

    Full Text Available We present the results on the effect of surface morphology and dispersion media on the properties of PEDOT:PSS/n-Si hybrid solar cell containing functionalized graphene (Gr. The hybrid solar cells based on SiNWs showed higher power conversion efficiency (PCE compared to the planar based cells due to suppressing the carrier recombination and improving carrier transport efficiency. The PCE of hybrid solar cells could be improved by adding Gr into PEDOT:PSS. Different solvents including deionized (DI water, ethylene glycol (EG, and isopropyl alcohol (IPA were used as media for Gr dispersion. The best performance was obtained for the cell containing Gr dispersed in EG with a measured PCE of 7.33% and nearly 13% and 16% enhancement in comparison with the cells using Gr dispersed in IPA and DI water, respectively. The increase in PCE is attributed to improving the carrier-mobility, electrical conductivity, PEDOT crystallinity, and ordering.

  12. Effects of annealing temperatures on the morphological, mechanical, surface chemical bonding, and solar selectivity properties of sputtered TiAlSiN thin films

    International Nuclear Information System (INIS)

    Rahman, M. Mahbubur; Jiang, Zhong-Tao; Zhou, Zhi-feng; Xie, Zonghan; Yin, Chun Yang; Kabir, Humayun; Haque, Md. Mahbubul; Amri, Amun; Mondinos, Nicholas; Altarawneh, Mohammednoor

    2016-01-01

    Quaternary sputtered TiAlSiN coatings were investigated for their high temperature structural stability, surface morphology, mechanical behaviors, surface chemical bonding states, solar absorptance and thermal emittance for possible solar selective surface applications. The TiAlSiN films were synthesized, via unbalanced magnetron sputtered technology, on AISI M2 steel substrate and annealed at 500 °C - 800 °C temperature range. SEM micrographs show nanocomposite-like structure with amorphous grain boundaries. Nanoindentation analyses indicate a decrease of hardness, plastic deformation and constant yield strength for the coatings. XPS analysis show mixed Ti, Al and Si nitride and oxide as main coating components but at 800 °C the top layer of the coatings is clearly composed of only Ti and Al oxides. Synchrotron radiation XRD (SR-XRD) results indicate various Ti, Al and Si nitride and oxide phases, for the above annealing temperature range with a phase change occurring with the Fe component of the substrate. UV–Vis spectroscopy, FTIR spectroscopy studies determined a high solar selectivity, s of 24.6 for the sample annealed at 600 °C. Overall results show good structural and morphological stability of these coatings at temperatures up to 800 °C with a very good solar selectivity for real world applications. - Highlights: • TiAlSiN sputtered coatings were characterized for solar selective applications. • In situ synchrotron radiation XRD were studies show the occurrence of multiple stable phases. • A high selectivity of 24.63 has been achieved for the coatings annealed at 700 °C. • Existence of XRD phases were also confirmed by XPS measurements. • At high temperature annealing the mechanical properties of films were governed by the utmost surfaces of the films.

  13. The miniaturized proportional counter HD-2(Fe)/(Si) for the GALLEX solar neutrino experiment

    Energy Technology Data Exchange (ETDEWEB)

    Wink, R.; Anselmann, P.; Doerflinger, D.; Hampel, W.; Heusser, G.; Kirsten, T.; Moegel, P.; Pernicka, E.; Plaga, R.; Schlosser, C. (Max Planck Inst. fuer Kernphysik, Heidelberg (Germany))

    1993-06-01

    The miniaturized proportional counters used for the detection of [sup 71]Ge in the solar neutrino project GALLEX are characterized. We also report on the construction techniques applied to build these counters and to achieve the described performance. A very low counting background is achieved by, among other things, careful selection of the materials used for construction. The total [sup 71]Ge detection efficiency after applying cuts to reduce the background is about 66%. (orig.).

  14. AFM measurements of novel solar cells. Studying electronic properties of Si-based radial junctions

    Czech Academy of Sciences Publication Activity Database

    Hývl, Matěj

    -, č. 1 (2014), s. 52-53 ISSN 1439-4243 R&D Projects: GA ČR GA13-25747S; GA ČR GA13-12386S; GA MŠk(CZ) LM2011026 Institutional support: RVO:68378271 Keywords : AFM measurements * conductive cantilever * electronic properties * nanowires * PF TUNA Subject RIV: BM - Solid Matter Physics ; Magnetism http://www.imaging-git.com/science/scanning-probe-microscopy/afm-measurements-novel-solar- cells

  15. Nanocrystalline diamond on Si solar cells for direct photoelectrochemical water splitting

    Czech Academy of Sciences Publication Activity Database

    Ashcheulov, Petr; Kusko, M.; Fendrych, František; Poruba, A.; Taylor, Andrew; Jäger, Aleš; Fekete, Ladislav; Kraus, I.; Kratochvílová, Irena

    2014-01-01

    Roč. 211, č. 10 (2014), s. 2347-2352 ISSN 1862-6300 R&D Projects: GA ČR GA13-31783S; GA MŠk(CZ) LM2011026 EU Projects: European Commission(XE) 238201 - MATCON Institutional support: RVO:68378271 Keywords : boron-doped diamond * solar cell * heterostructure * water splitting Subject RIV: JI - Composite Materials Impact factor: 1.616, year: 2014

  16. The fabrication of front electrodes of Si solar cell by dispensing printing

    International Nuclear Information System (INIS)

    Kim, Do-Hyung; Ryu, Sung-Soo; Shin, Dongwook; Shin, Jung-Han; Jeong, Jwa-Jin; Kim, Hyeong-Jun; Chang, Hyo Sik

    2012-01-01

    Highlights: ► We propose the process for the front silver electrode by employing dispensing method. ► The dispensing method is a non-contact printing process. ► The electrode by dispensing method has more uniform and narrower shape. ► The dispensing method helped to enhance the efficiency of solar cell by 0.8% absolute. - Abstract: The dispensing printing was applied to fabricate the front electrodes of silicon solar cell. In this method, a micro channel nozzle and normal Ag paste were employed. The aspect ratio and line width of electrodes could be controlled by the process variables such as the inner diameter of nozzle, dispensing speed, discharge pressure, and the gap between wafer and nozzle. For the nozzle with the inner diameter of 50 μm, the line width and aspect ratio of electrode were under 90 μm and more than ∼0.2, respectively. When comparing the efficiency of solar cell prepared by conventional screen printing and the dispensing printing, the latter exhibited 19.1%, which is 0.8% absolute higher than the former even with the same Ag paste. This is because the electrode by dispensing printing has uniform aspect ratio and narrow line width over the length of electrode.

  17. Numerical simulations: Toward the design of 27.6% efficient four-terminal semi-transparent perovskite/SiC passivated rear contact silicon tandem solar cell

    Science.gov (United States)

    Pandey, Rahul; Chaujar, Rishu

    2016-12-01

    In this work, a novel four-terminal perovskite/SiC-based rear contact silicon tandem solar cell device has been proposed and simulated to achieve 27.6% power conversion efficiency (PCE) under single AM1.5 illumination. 20.9% efficient semitransparent perovskite top subcell has been used for perovskite/silicon tandem architecture. The tandem structure of perovskite-silicon solar cells is a promising method to achieve efficient solar energy conversion at low cost. In the four-terminal tandem configuration, the cells are connected independently and hence avoids the need for current matching between top and bottom subcell, thus giving greater design flexibility. The simulation analysis shows, PCE of 27.6% and 22.4% with 300 μm and 10 μm thick rear contact Si bottom subcell, respectively. This is a substantial improvement comparing to transparent perovskite solar cell and c-Si solar cell operated individually. The impact of perovskite layer thickness, monomolecular, bimolecular, and trimolecular recombination have also been obtained on the performance of perovskite top subcell. Reported PCEs of 27.6% and 22.4% are 1.25 times and 1.42 times higher as compared to experimentally available efficiencies of 22.1% and 15.7% in 300 μm and 10 μm thick stand-alone silicon solar cell devices, respectively. The presence of SiC significantly suppressed the interface recombination in bottom silicon subcell. Detailed realistic technology computer aided design (TCAD) analysis has been performed to predict the behaviour of the device.

  18. Passivation effect of water vapour on thin film polycrystalline Si solar cells

    Czech Academy of Sciences Publication Activity Database

    Pikna, Peter; Müller, Martin; Becker, C.; Fejfar, Antonín

    2016-01-01

    Roč. 213, č. 7 (2016), s. 1969-1975 ISSN 1862-6300 R&D Projects: GA MŠk LM2015087; GA ČR GA13-12386S Grant - others:AV ČR(CZ) DAAD-16-27 Program:Bilaterální spolupráce Institutional support: RVO:68378271 Keywords : passivation, * plasma hydrogenation * silicon * solar cells * thin films * water vapour Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.775, year: 2016

  19. High-performance a -Si/c-Si heterojunction photoelectrodes for photoelectrochemical oxygen and hydrogen evolution

    KAUST Repository

    Wang, Hsin Ping; Sun, Ke; Noh, Sun Young; Kargar, Alireza; Tsai, Meng Lin; Huang, Ming Yi; Wang, Deli; He, Jr-Hau

    2015-01-01

    Amorphous Si (a-Si)/crystalline Si (c-Si) heterojunction (SiHJ) can serve as highly efficient and robust photoelectrodes for solar fuel generation. Low carrier recombination in the photoelectrodes leads to high photocurrents and photovoltages

  20. Influence of N-type μc-SiOx:H intermediate reflector and top cell material properties on the electrical performance of "micromorph" tandem solar cells

    Science.gov (United States)

    Chatterjee, P.; Roca i Cabarrocas, P.

    2018-01-01

    Amorphous silicon (a-Si:H) / micro-crystalline silicon (μc-Si:H), "micromorph" tandem solar cells have been investigated using a detailed electrical - optical model. Although such a tandem has good light absorption over the entire visible spectrum, the a-Si:H top cell suffers from strong light-induced degradation (LID). To improve matters, we have replaced a-Si:H by hydrogenated polymorphous silicon (pm-Si:H), a nano-structured silicon thin film with lower LID than a-Si:H. But the latter's low current carrying capacity necessitates a thicker top cell for current-matching, again leading to LID problems. The solution is to introduce a suitable intermediate reflector (IR) at the junction between the sub-cells, to concentrate light of the shorter visible wavelengths into the top cell. Here we assess the suitability of N-type micro-crystalline silicon oxide (μc-SiOx:H) as an IR. The sensitivity of the solar cell performance to the complex refractive index, thickness and texture of such a reflector is studied. We conclude that N-μc-SiOx:H does concentrate light into the top sub-cell, thus reducing its required thickness for current-matching. However the IR also reflects light right out of the device; so that the initial efficiency suffers. The advantage of such an IR is ultimately seen in the stabilized state since the LID of a thin top cell is low. We also find that for high stabilized efficiencies, the IR should be flat (having no texture of its own). Our study indicates that we may expect to reach 15% stable tandem micromorph efficiency.

  1. Investigation of Defects Origin in p-Type Si for Solar Applications

    Science.gov (United States)

    Gwóźdź, Katarzyna; Placzek-Popko, Ewa; Mikosza, Maciej; Zielony, Eunika; Pietruszka, Rafal; Kopalko, Krzysztof; Godlewski, Marek

    2017-07-01

    In order to improve the efficiency of a solar cell based on silicon, one must find a compromise between its price and crystalline quality. That is precisely why the knowledge of defects present in the material is of primary importance. This paper studies the defects in commercially available cheap Schottky titanium/gold silicon wafers. The electrical properties of the diodes were defined by using current-voltage and capacitance-voltage measurements. Low series resistance and ideality factor are proofs of the good quality of the sample. The concentration of the acceptors is in accordance with the manufacturer's specifications. Deep level transient spectroscopy measurements were used to identify the defects. Three hole traps were found with activation energies equal to 0.093 eV, 0.379 eV, and 0.535 eV. Comparing the values with the available literature, the defects were determined as connected to the presence of iron interstitials in the silicon. The quality of the silicon wafer seems good enough to use it as a substrate for the solar cell heterojunctions.

  2. The role of high work-function metallic nanodots on the performance of a-Si:H solar cells: offering ohmic contact to light trapping.

    Science.gov (United States)

    Kim, Jeehwan; Abou-Kandil, Ahmed; Fogel, Keith; Hovel, Harold; Sadana, Devendra K

    2010-12-28

    Addition of carbon into p-type "window" layers in hydrogenated amorphous silicon (a-Si:H) solar cells enhances short circuit currents and open circuit voltages by a great deal. However, a-Si:H solar cells with high carbon-doped "window" layers exhibit poor fill factors due to a Schottky barrier-like impedance at the interface between a-SiC:H windows and transparent conducting oxides (TCO), although they show maximized short circuit currents and open circuit voltages. The impedance is caused by an increasing mismatch between the work function of TCO and that of p-type a-SiC:H. Applying ultrathin high-work-function metals at the interface between the two materials results in an effective lowering of the work function mismatch and a consequent ohmic behavior. If the metal layer is sufficiently thin, then it forms nanodots rather than a continuous layer which provides light-scattering effect. We demonstrate 31% efficiency enhancement by using high-work-function materials for engineering the work function at the key interfaces to raise fill factors as well as photocurrents. The use of metallic interface layers in this work is a clear contrast to previous work where attempts were made to enhance the photocurrent using plasmonic metal nanodots on the solar cell surface.

  3. Studies on the polycrystalline silicon/SiO2 stack as front surface field for IBC solar cells by two-dimensional simulations

    International Nuclear Information System (INIS)

    Jiang Shuai; Jia Rui; Tao Ke; Hou Caixia; Sun Hengchao; Li Yongtao; Yu Zhiyong

    2017-01-01

    Interdigitated back contact (IBC) solar cells can achieve a very high efficiency due to its less optical losses. But IBC solar cells demand for high quality passivation of the front surface. In this paper, a polycrystalline silicon/SiO 2 stack structure as front surface field to passivate the front surface of IBC solar cells is proposed. The passivation quality of this structure is investigated by two dimensional simulations. Polycrystalline silicon layer and SiO 2 layer are optimized to get the best passivation quality of the IBC solar cell. Simulation results indicate that the doping level of polycrystalline silicon should be high enough to allow a very thin polycrystalline silicon layer to ensure an effective passivation and small optical losses at the same time. The thickness of SiO 2 should be neither too thin nor too thick, and the optimal thickness is 1.2 nm. Furthermore, the lateral transport properties of electrons are investigated, and the simulation results indicate that a high doping level and conductivity of polycrystalline silicon can improve the lateral transportation of electrons and then the cell performance. (paper)

  4. Effect of annealing temperature on the thermal stress and dislocation density of mc-Si ingot grown by DS process for solar cell application

    Science.gov (United States)

    Sanmugavel, S.; Srinivasan, M.; Aravinth, K.; Ramasamy, P.

    2018-04-01

    90% of the solar industries are using crystalline silicon. Cost wise the multi-crystalline silicon solar cells are better compared to mono crystalline silicon. But because of the presence of grain boundaries, dislocations and impurities, the efficiency of the multi-crystalline silicon solar cells is lower than that of mono crystalline silicon solar cells. By reducing the defect and dislocation we can achieve high conversion efficiency. The velocity of dislocation motion increases with stress. By annealing the grown ingot at proper temperature we can decrease the stress and dislocation. Our simulation results show that the value of stress and dislocation density is decreased by annealing the grown ingot at 1400K and the input parameters can be implemented in real system to grow a better mc-Si ingot for energy harvesting applications.

  5. P-type sp3-bonded BN/n-type Si heterodiode solar cell fabricated by laser-plasma synchronous CVD method

    International Nuclear Information System (INIS)

    Komatsu, Shojiro; Nagata, Takahiro; Chikyo, Toyohiro; Sato, Yuhei; Watanabe, Takayuki; Hirano, Daisuke; Takizawa, Takeo; Nakamura, Katsumitsu; Hashimoto, Takuya; Nakamura, Takuya; Koga, Kazunori; Shiratani, Masaharu; Yamamoto, Atsushi

    2009-01-01

    A heterojunction of p-type sp 3 -bonded boron nitride (BN) and n-type Si fabricated by laser-plasma synchronous chemical vapour deposition (CVD) showed excellent rectifying properties and proved to work as a solar cell with photovoltaic conversion efficiency of 1.76%. The BN film was deposited on an n-type Si (1 0 0) substrate by plasma CVD from B 2 H 6 + NH 3 + Ar while doping of Si into the BN film was induced by the simultaneous irradiation of an intense excimer laser with a pulse power of 490 mJ cm -2 , at a wavelength of 193 nm and at a repetition rate of 20 Hz. The source of dopant Si was supposed to be the Si substrate ablated at the initial stage of the film growth. The laser enhanced the doping (and/or diffusion) of Si into BN as well as the growth of sp 3 -bonded BN simultaneously in this method. P-type conduction of BN films was determined by the hot (thermoelectric) probe method. The BN/Si heterodiode with an essentially transparent p-type BN as a front layer is supposed to efficiently absorb light reaching the active region so as to potentially result in high efficiency.

  6. Ultrathin MoS2-coated Ag@Si nanosphere arrays as an efficient and stable photocathode for solar-driven hydrogen production.

    Science.gov (United States)

    Zhou, Qingwei; Su, Shaoqiang; Hu, Die; Lin, Lin; Yan, Zhibo; Gao, Xingsen; Zhang, Zhang; Liu, Jun-Ming

    2018-01-30

    Solar-driven photoelectrochemical (PEC) water splitting has attracted a great deal of attention recently. Silicon (Si) is an ideal light absorber for solar energy conversion. However, the poor stability and inefficient surface catalysis of Si photocathodes for the hydrogen evolution reaction (HER) have remained key challenges. Alternatively, MoS 2 has been reported to exhibit excellent catalysis performance if sufficient active sites for the HER are available. Here, ultrathin MoS 2 nanoflakes are directly synthesized to coat arrays of Ag-core Si-shell nanospheres (Ag@Si NSs) by using chemical vapor deposition. Due to the high surface area ratio and large curvature of these NSs, the as-grown MoS 2 nanoflakes can accommodate more active sites. In addition, the high-quality coating of MoS 2 nanoflakes on the Ag@Si NSs protects the photocathode from damage during the PEC reaction. An photocurrent density of 33.3 mA cm -2 at a voltage of -0.4 V is obtained versus the reversible hydrogen electrode. The as-prepared nanostructure as a hydrogen photocathode is evidenced to have high stability over 12 h PEC performance. This work opens up opportunities for composite photocathodes with high activity and stability using cheap and stable co-catalysts.

  7. Ultra-thin MoS2 coated Ag@Si nanosphere arrays as efficient and stable photocathode for solar-driven hydrogen production.

    Science.gov (United States)

    Zhou, Qingwei; Su, Shaoqiang; Hu, Die; Lin, Lin; Yan, Zhibo; Gao, Xingsen; Zhang, Zhang; Liu, Junming

    2018-01-02

    Solar-driven photoelectrochemical (PEC) water splitting has recently attracted much attention. Silicon (Si) is an ideal light absorber for solar energy conversion. However, the poor stability and inefficient surface catalysis of Si photocathode for hydrogen evolution reaction (HER) have been remained as the key challenges. Alternatively, MoS2 has been reported to exhibit the excellent catalysis performance if sufficient active sites for the HER are available. Here, ultra-thin MoS2 nanoflakes are directly synthesized to coat on the arrays of Ag-core Si-shell nanospheres (Ag@Si NSs) using the chemical vapor deposition (CVD). Due to the high surface area ratio and large curvature of these NSs, the as-grown MoS2 nanoflakes can accommodate more active sites. Meanwhile, the high-quality coating of MoS2 nanoflakes on the Ag@Si NSs protects the photocathode from damage during the PEC reaction. A high efficiency with a photocurrent of 33.3 mA cm-2 at a voltage of -0.4 V vs. the reversible hydrogen electrode is obtained. The as-prepared nanostructure as hydrogen photocathode is evidenced to have high stability over 12 hour PEC performance. This work opens opportunities for composite photocathode with high activity and stability using cheap and stable co-catalysts. © 2017 IOP Publishing Ltd.

  8. Electrical characterization of MIS devices using PECVD SiN{sub x}:H films for application of silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Jin-Su; Cho, Jun-Sik; Park, Joo-Hyung; Ahn, Seung-Kyu; Shin, Kee-Shik; Yoon, Kyung-Hoon [Korea Institute of Energy Research, Daejeon (Korea, Republic of); Yi, Jun-Sin [Sungkyunkwan University, Suwon (Korea, Republic of)

    2012-07-15

    The surface passivation of crystalline silicon solar cells using plasma enhanced chemical vapor deposition (PECVD), hydrogenated, silicon-nitride (SiN{sub x}:H) thin films has become significant due to a low-temperature, low-cost and very effective defect passivation process. Also, a good quality antireflection coating can be formed. In this work, SiN{sub x}:H thin films were deposited by varying the gas ratio R (=NH{sub 3}/SiH{sub 4}+NH{sub 3}) and were annealed by rapid thermal processing (RTP). Metal-insulator- semiconductor (MIS) devices were fabricated using SiN{sub x}:H thin films as insulator layers and they were analyzed in the temperature range of 100 - 400 K by using capacitance-voltage (C-V) and current-voltage (I-V) measurements. The annealed SiN{sub x}:H thin films were evaluated by using the electrical properties at different temperature to determine the effect of surface passivation. We achieved an energy conversion efficiency of 18.1% under one-sun standard testing conditions for large-area (156 mm x 156 mm) crystalline-silicon solar cells.

  9. A novel method to achieve selective emitter for silicon solar cell using low cost pattern-able a-Si thin films as the semi-transparent phosphorus diffusion barrier

    International Nuclear Information System (INIS)

    Chen, Da Ming; Liang, Zong Cun; Zhuang, Lin; Lin, Yang Huan; Shen, Hui

    2012-01-01

    Highlights: ► a-Si thin films as semitransparent phosphorus diffusion barriers for solar cell. ► a-Si thin films on silicon wafers were patterned by the alkaline solution. ► Selective emitter was formed with patterned a-Si as diffusion barrier for solar cell. -- Abstract: Selective emitter for silicon solar cell was realized by employing a-Si thin films as the semi-transparent diffusion barrier. The a-Si thin films with various thicknesses (∼10–40 nm) were deposited by the electron-beam evaporation technique. Emitters with sheet resistances from 37 to 145 Ω/□ were obtained via POCl 3 diffusion process. The thickness of the a-Si diffusion barrier was optimized to be 15 nm for selective emitter in our work. Homemade mask which can dissolve in ethanol was screen-printed on a-Si film to make pattern. The a-Si film was then patterned in KOH solution to form finger-like design. Selective emitter was obtainable with one-step diffusion with patterned a-Si film on. Combinations of sheet resistances for the high-/low-level doped regions of 39.8/112.1, 36.2/88.8, 35.4/73.9 were obtained. These combinations are suitable for screen-printed solar cells. This preparation method of selective emitter based on a-Si diffusion barrier is a promising approach for low cost industrial manufacturing.

  10. Increment of specific heat capacity of solar salt with SiO2 nanoparticles.

    Science.gov (United States)

    Andreu-Cabedo, Patricia; Mondragon, Rosa; Hernandez, Leonor; Martinez-Cuenca, Raul; Cabedo, Luis; Julia, J Enrique

    2014-01-01

    Thermal energy storage (TES) is extremely important in concentrated solar power (CSP) plants since it represents the main difference and advantage of CSP plants with respect to other renewable energy sources such as wind, photovoltaic, etc. CSP represents a low-carbon emission renewable source of energy, and TES allows CSP plants to have energy availability and dispatchability using available industrial technologies. Molten salts are used in CSP plants as a TES material because of their high operational temperature and stability of up to 500°C. Their main drawbacks are their relative poor thermal properties and energy storage density. A simple cost-effective way to improve thermal properties of fluids is to dope them with nanoparticles, thus obtaining the so-called salt-based nanofluids. In this work, solar salt used in CSP plants (60% NaNO3 + 40% KNO3) was doped with silica nanoparticles at different solid mass concentrations (from 0.5% to 2%). Specific heat was measured by means of differential scanning calorimetry (DSC). A maximum increase of 25.03% was found at an optimal concentration of 1 wt.% of nanoparticles. The size distribution of nanoparticle clusters present in the salt at each concentration was evaluated by means of scanning electron microscopy (SEM) and image processing, as well as by means of dynamic light scattering (DLS). The cluster size and the specific surface available depended on the solid content, and a relationship between the specific heat increment and the available particle surface area was obtained. It was proved that the mechanism involved in the specific heat increment is based on a surface phenomenon. Stability of samples was tested for several thermal cycles and thermogravimetric analysis at high temperature was carried out, the samples being stable. 65.: Thermal properties of condensed matter; 65.20.-w: Thermal properties of liquids; 65.20.Jk: Studies of thermodynamic properties of specific liquids.

  11. Broadband photocurrent enhancement and light-trapping in thin film Si solar cells with periodic Al nanoparticle arrays on the front

    DEFF Research Database (Denmark)

    Uhrenfeldt, C.; Villesen, T. F.; Tetu, A.

    2015-01-01

    Plasmonic resonances in metal nanoparticles are considered candidates for improved thin film Si photovoltaics. In periodic arrays the influence of collective modes can enhance the resonant properties of such arrays. We have investigated the use of periodic arrays of Al nanoparticles placed...... on the front of a thin film Si test solar cell. It is demonstrated that the resonances from the Al nanoparticle array cause a broadband photocurrent enhancement ranging from the ultraviolet to the infrared with respect to a reference cell. From the experimental results as well as from numerical simulations...

  12. High Efficiency Thin Film CdTe and a-Si Based Solar Cells: Final Technical Report, 4 March 1998--15 October 2001

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A. D.; Deng, X.; Bohn, R. G.

    2003-10-01

    This is the final report covering about 42 months of this subcontract for research on high-efficiency CdTe-based thin-film solar cells and on high-efficiency a-Si-based thin-film solar cells. Phases I and II have been extensively covered in two Annual Reports. For this Final Report, highlights of the first two Phases will be provided and then detail will be given on the last year and a half of Phase III. The effort on CdTe-based materials is led by Prof. Compaan and emphasizes the use of sputter deposition of the semiconductor layers in the fabrication of CdS/CdTe cells. The effort on high-efficiency a-Si materials is led by Prof. Deng and emphasizes plasma-enhanced chemical vapor deposition for cell fabrication with major efforts on triple-junction devices.

  13. Preparation of ITO/SiO{sub x}/n-Si solar cells with non-decline potential field and hole tunneling by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Du, H. W.; Yang, J.; Li, Y. H.; Xu, F. [SHU-SolarE R and D Lab, Department of Physics, Shanghai University, Shanghai 200444 (China); Xu, J. [Instrumental Analysis and Research Center, Shanghai University, Shanghai 200444 (China); Ma, Z. Q., E-mail: zqma@shu.edu.cn [SHU-SolarE R and D Lab, Department of Physics, Shanghai University, Shanghai 200444 (China); Instrumental Analysis and Research Center, Shanghai University, Shanghai 200444 (China)

    2015-03-02

    Complete photo-generated minority carrier's quantum tunneling device under AM1.5 illumination is fabricated by depositing tin-doped indium oxide (ITO) on n-type silicon to form a structure of ITO/SiO{sub x}/n-Si heterojunction. The work function difference between ITO and n-Si materials essentially acts as the origin of built-in-field. Basing on the measured value of internal potential (V{sub bi} = 0.61 V) and high conversion efficiency (9.27%), we infer that this larger photo-generated holes tunneling occurs when a strong inversion layer at the c-Si surface appears. Also, the mixed electronic states in the ultra-thin intermediate region between ITO and n-Si play a defect-assisted tunneling.

  14. Preparation of ITO/SiOx/n-Si solar cells with non-decline potential field and hole tunneling by magnetron sputtering

    Science.gov (United States)

    Du, H. W.; Yang, J.; Li, Y. H.; Xu, F.; Xu, J.; Ma, Z. Q.

    2015-03-01

    Complete photo-generated minority carrier's quantum tunneling device under AM1.5 illumination is fabricated by depositing tin-doped indium oxide (ITO) on n-type silicon to form a structure of ITO/SiOx/n-Si heterojunction. The work function difference between ITO and n-Si materials essentially acts as the origin of built-in-field. Basing on the measured value of internal potential (Vbi = 0.61 V) and high conversion efficiency (9.27%), we infer that this larger photo-generated holes tunneling occurs when a strong inversion layer at the c-Si surface appears. Also, the mixed electronic states in the ultra-thin intermediate region between ITO and n-Si play a defect-assisted tunneling.

  15. Fabrication of double- and triple-junction solar cells with hydrogenated amorphous silicon oxide (a-SiOx:H) top cell

    Czech Academy of Sciences Publication Activity Database

    Kim, D.Y.; Guijt, E.; Si, F.T.; Santbergen, R.; Holovský, Jakub; Isabella, O.; van Swaaij, R.A.C.M.M.; Zeman, M.

    2015-01-01

    Roč. 141, Oct (2015), s. 148-153 ISSN 0927-0248 R&D Projects: GA MŠk 7E12029 EU Projects: European Commission(XE) 283501 - Fast Track Institutional support: RVO:68378271 Keywords : multi-junction solar cel * a-SiOx:H * high voc * current matching Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.732, year: 2015

  16. Designing Efficient Solar-Driven Hydrogen Evolution Photocathodes Using Semitransparent MoQxCly(Q = S, Se) Catalysts on Si Micropyramids

    KAUST Repository

    Ding, Qi

    2015-09-21

    © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Silicon micropyramids with n+pp+ junctions are demonstrated to be efficient absorbers for integrated solar-driven hydrogen production systems enabling significant improvements in both photocurrent and onset potential. When conformally coated with MoSxCly, a catalyst that has excellent catalytic activity and high optical transparency, the highest photocurrent density for Si-based photocathodes with earth-abundant catalysts is achieved.

  17. Low cost back contact heterojunction solar cells on thin c-Si wafers. integrating laser and thin film processing for improved manufacturability

    Energy Technology Data Exchange (ETDEWEB)

    Hegedus, Steven S. [Univ. of Delaware, Newark, DE (United States)

    2015-09-08

    An interdigitated back contact (IBC) Si wafer solar cell with deposited a-Si heterojunction (HJ) emitter and contacts is considered the ultimate single junction Si solar cell design. This was confirmed in 2014 by both Panasonic and Sharp Solar producing IBC-HJ cells breaking the previous record Si solar cell efficiency of 25%. But manufacturability at low cost is a concern for the complex IBC-HJ device structure. In this research program, our goals were to addressed the broad industry need for a high-efficiency c-Si cell that overcomes the dominant module cost barriers by 1) developing thin Si wafers synthesized by innovative, kerfless techniques; 2) integrating laser-based processing into most aspects of solar cell fabrication, ensuring high speed and low thermal budgets ; 3) developing an all back contact cell structure compatible with thin wafers using a simplified, low-temperature fabrication process; and 4) designing the contact patterning to enable simplified module assembly. There were a number of significant achievements from this 3 year program. Regarding the front surface, we developed and applied new method to characterize critical interface recombination parameters including interface defect density Dit and hole and electron capture cross-section for use as input for 2D simulation of the IBC cell to guide design and loss analysis. We optimized the antireflection and passivation properties of the front surface texture and a-Si/a-SiN/a-SiC stack depositions to obtain a very low (< 6 mA/cm2) front surface optical losses (reflection and absorption) while maintaining excellent surface passivation (SRV<5 cm/s). We worked with kerfless wafer manufacturers to apply defect-engineering techniques to improve bulk minority-carrier lifetime of thin kerfless wafers by both reducing initial impurities during growth and developing post-growth gettering techniques. This led insights about the kinetics of nickel, chromium, and dislocations in PV-grade silicon and to

  18. Low cost back contact heterojunction solar cells on thin c-Si wafers. Integrating laser and thin film processing for improved manufacturability

    Energy Technology Data Exchange (ETDEWEB)

    Hegedus, Steven S. [Univ. of Delaware, Newark, DE (United States)

    2015-09-08

    An interdigitated back contact (IBC) Si wafer solar cell with deposited a-Si heterojunction (HJ) emitter and contacts is considered the ultimate single junction Si solar cell design. This was confirmed in 2014 by both Panasonic and Sharp Solar producing IBC-HJ cells breaking the previous record Si solar cell efficiency of 25%. But manufacturability at low cost is a concern for the complex IBC-HJ device structure. In this research program, our goals were to addressed the broad industry need for a high-efficiency c-Si cell that overcomes the dominant module cost barriers by 1) developing thin Si wafers synthesized by innovative, kerfless techniques; 2) integrating laser-based processing into most aspects of solar cell fabrication, ensuring high speed and low thermal budgets ; 3) developing an all back contact cell structure compatible with thin wafers using a simplified, low-temperature fabrication process; and 4) designing the contact patterning to enable simplified module assembly. There were a number of significant achievements from this 3 year program. Regarding the front surface, we developed and applied new method to characterize critical interface recombination parameters including interface defect density Dit and hole and electron capture cross-section for use as input for 2D simulation of the IBC cell to guide design and loss analysis. We optimized the antireflection and passivation properties of the front surface texture and a-Si/a-SiN/a-SiC stack depositions to obtain a very low (< 6 mA/cm2) front surface optical losses (reflection and absorption) while maintaining excellent surface passivation (SRV<5 cm/s). We worked with kerfless wafer manufacturers to apply defect-engineering techniques to improve bulk minority-carrier lifetime of thin kerfless wafers by both reducing initial impurities during growth and developing post-growth gettering techniques. This led insights about the kinetics of nickel, chromium, and dislocations in PV-grade silicon and to

  19. Photocatalytic and Escherichia antibacterial activities of Ag-TiO2-SiO2 nanocomposite powder under simulated solar light irradiation

    Science.gov (United States)

    Van Dang, Han; Le, Vien Minh; Hoang, Hoang Anh

    2017-09-01

    The photocatalytic nanocomposite powder TiO2, TiO2-SiO2 and Ag-TiO2-SiO2 (ATS) were synthesized by sol-gel method assisted with hydrothermal treatment and characterized by X-ray diffraction (XRD), Raman spectroscopy (RAMAN), Fourier transformed infrared spectroscopy (FT-IR), Energy dispersive X-ray (EDX), Transmission electron microscope (TEM), Brunauer-Emmett-Teller (BET) surface area and UV-Vis absorption spectra analysis. The Escherichia coli (E. coli) antibacterial activity of synthesized photo-catalysts under simulated solar light have been also investigated. The heterogeneous A4TS10 with the 4 wt.% Ag and 10 wt.% SiO2 had anatase and rutile phase, spherical in shape with the particle size about 20 - 30 nm, specific surface area (SSA) of 218.4 m2/g, the band gap of 3.06 eV. The E. coli antibacterial activities of the synthesized samples under simulated solar light were also investigated under simulated solar light with 25 W of light intensity. The E. coli antibacterial ability of A4TS10 performed the highest photo-activity. E. coli bacteria was entirely killed after 30-minute irradiation and no bacterial regrowth was observed after 24 hours. The research results demonstrated that the photocatalytic A4TS10 is a promising green material to treatment wastewater infected bacteria application.

  20. Enhancing Light-Trapping Properties of Amorphous Si Thin-Film Solar Cells Containing High-Reflective Silver Conductors Fabricated Using a Nonvacuum Process

    Directory of Open Access Journals (Sweden)

    Jun-Chin Liu

    2014-01-01

    Full Text Available We proposed a low-cost and highly reflective liquid organic sheet silver conductor using back contact reflectors in amorphous silicon (a-Si single junction superstrate configuration thin-film solar cells produced using a nonvacuum screen printing process. A comparison of silver conductor samples with vacuum-system-sputtered silver samples indicated that the short-circuit current density (Jsc of sheet silver conductor cells was higher than 1.25 mA/cm2. Using external quantum efficiency measurements, the sheet silver conductor using back contact reflectors in cells was observed to effectively enhance the light-trapping ability in a long wavelength region (between 600 nm and 800 nm. Consequently, we achieved an optimal initial active area efficiency and module conversion efficiency of 9.02% and 6.55%, respectively, for the a-Si solar cells. The results indicated that the highly reflective sheet silver conductor back contact reflector layer prepared using a nonvacuum process is a suitable candidate for high-performance a-Si thin-film solar cells.

  1. Contact Selectivity Engineering in a 2 μm Thick Ultrathin c-Si Solar Cell Using Transition-Metal Oxides Achieving an Efficiency of 10.8.

    Science.gov (United States)

    Xue, Muyu; Islam, Raisul; Meng, Andrew C; Lyu, Zheng; Lu, Ching-Ying; Tae, Christian; Braun, Michael R; Zang, Kai; McIntyre, Paul C; Kamins, Theodore I; Saraswat, Krishna C; Harris, James S

    2017-12-06

    In this paper, the integration of metal oxides as carrier-selective contacts for ultrathin crystalline silicon (c-Si) solar cells is demonstrated which results in an ∼13% relative improvement in efficiency. The improvement in efficiency originates from the suppression of the contact recombination current due to the band offset asymmetry of these oxides with Si. First, an ultrathin c-Si solar cell having a total thickness of 2 μm is shown to have >10% efficiency without any light-trapping scheme. This is achieved by the integration of nickel oxide (NiO x ) as a hole-selective contact interlayer material, which has a low valence band offset and high conduction band offset with Si. Second, we show a champion cell efficiency of 10.8% with the additional integration of titanium oxide (TiO x ), a well-known material for an electron-selective contact interlayer. Key parameters including V oc and J sc also show different degrees of enhancement if single (NiO x only) or double (both NiO x and TiO x ) carrier-selective contacts are integrated. The fabrication process for TiO x and NiO x layer integration is scalable and shows good compatibility with the device.

  2. Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

    Science.gov (United States)

    Wang, Fang-Hsing; Kuo, Hsin-Hui; Yang, Cheng-Fu; Liu, Min-Chu

    2014-01-01

    In this study, silicon nitride (SiNx) thin films were deposited on polyimide (PI) substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD) system. The gallium-doped zinc oxide (GZO) thin films were deposited on PI and SiNx/PI substrates at room temperature (RT), 100 and 200 °C by radio frequency (RF) magnetron sputtering. The thicknesses of the GZO and SiNx thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiNx thin films were a working pressure of 800 × 10−3 Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH4 = 20 sccm and NH3 = 210 sccm, respectively. For the GZO/PI and GZO-SiNx/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiNx/PI substrates with thickness of ~000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si) thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiNx/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiNx/PI substrates to fabricate α-Si thin film solar cells, and the solar cells’ properties were also investigated. We had found that substrates to get the optimally solar cells’ efficiency were 200 °C-deposited GZO-SiNx/PI. PMID:28788494

  3. Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Fang-Hsing Wang

    2014-02-01

    Full Text Available In this study, silicon nitride (SiNx thin films were deposited on polyimide (PI substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD system. The gallium-doped zinc oxide (GZO thin films were deposited on PI and SiNx/PI substrates at room temperature (RT, 100 and 200 °C by radio frequency (RF magnetron sputtering. The thicknesses of the GZO and SiNx thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiNx thin films were a working pressure of 800 × 10−3 Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH4 = 20 sccm and NH3 = 210 sccm, respectively. For the GZO/PI and GZO-SiNx/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiNx/PI substrates with thickness of ~1000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiNx/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiNx/PI substrates to fabricate α-Si thin film solar cells, and the solar cells’ properties were also investigated. We had found that substrates to get the optimally solar cells’ efficiency were 200 °C-deposited GZO-SiNx/PI.

  4. Investigation of Performance Silicon Heterojunction Solar Cells Using a-Si: H or a-SiC: H at Emitter Layer Through AMPS-1D Simulations

    Directory of Open Access Journals (Sweden)

    Asmaa BENSMAIN

    2014-05-01

    Full Text Available We offer a numerical simulation tool, AMPS-1D, which allows to model homo- as well as heterojunction devices. AMPS-1D is the short form of automat for simulation of heterostructures. The program solves the one dimensional semiconductor equations in steady-state. Furthermore, a variety of common characterization techniques have been implemented, current- voltage, external quantum efficiency, conduction and valence band. A user-friendly interface allows to easily perform parameter variations, and to visualize and compare your simulations. In this work, The silicon heterojunction cell performances are investigated by detailed described on external quantum efficiency, and light current-voltage characteristics by recognized simulator AMPS-1D (Analysis of Micro- electronics and Photonic Structures. The objective of this work is to study the correlation between the emitter properties of both heterojunction cells a-Si:H/c-Si and a-SiC:H/c-Si (absorption, defect profiles and energy band offsets and the carrier collection.

  5. Investigating the effect of silicon surface chemical treatment on Al/Si contact properties in GaP/Si solar cells

    Science.gov (United States)

    Kudryashov, D.; Gudovskikh, A.

    2018-03-01

    In the present work, experimental studies have been carried out to reveal how chemical treatment of a silicon surface affects the properties of the Al/Si contact. It has been shown that for p-type monocrystalline silicon substrates with a resistivity of 10 ohm cm, it is possible to form an ohmic Al/Si contact by magnetron sputtering of an aluminum thin film and its further annealing at temperatures of 400 - 450 °C. In the range of annealing temperatures of 250 - 400 °C, the Si substrate treatment in the HF solution leads to a significant increase in currents on the current-voltage curves of the Al/Si contact, while in the range of 450 - 700 °C, the effect of chemical treatment of the silicon is not detected.

  6. Fabrication of silicon solar cell with >18% efficiency using spin-on-film processing for phosphorus diffusion and SiO{sub 2}/graded index TiO{sub 2} anti-reflective coating

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Yi-Yu; Ho, Wen-Jeng, E-mail: wjho@ntut.edu.tw; Yeh, Chien-Wu

    2015-11-01

    Highlights: • Employed SOF technology for both phosphorus diffusion and multi-layer ARCs. • Optical properties of TiO{sub 2}, SiO{sub 2}, and SiO{sub 2}/TiO{sub 2}/TiO{sub 2} films are characterized. • Photovoltaic performances of the fabricated solar cells are measured and compared. • An impressive efficiency of 18.25% was obtained by using the SOF processes. - Abstract: This study employed spin-on film (SOF) technology for the fabrication of phosphorus diffusion and multi-layer anti-reflective coatings (ARCs) with a graded index on silicon (Si) wafers. Low cost and high efficiency solar cells are important issues for the operating cost of a photovoltaic system. SOF technology for the fabrication of solar cells can be for the achievement of this goal. This study succeeded in the application of SOF technology in the preparation of both phosphorus diffusion and SiO{sub 2}/graded index TiO{sub 2} ARCs for Si solar cells. Optical properties of TiO{sub 2}, SiO{sub 2}, and multi-layer SiO{sub 2}/TiO{sub 2} deposition by SOF are characterized. Electrical and optical characteristics of the fabricated solar cells are measured and compared. An impressive efficiency of 18.25% was obtained by using the SOF processes.

  7. Fabrication of low reflective nanopore-type black Si layer using one-step Ni-assisted chemical etching for Si solar cell application

    Science.gov (United States)

    Takaloo, AshkanVakilipour; Kolahdouz, Mohammadreza; Poursafar, Jafar; Es, Firat; Turan, Rasit; Ki-Joo, Seung

    2018-03-01

    Nanotextured Si fabricated through metal-assisted chemical etching (MACE) technique exhibits a promising potential for producing antireflective layer for photovoltaic (PV) application. In this study, a novel single-step nickel (Ni) assisted etching technique was applied to produce an antireflective, nonporous Si (black Si) in an aqueous solution containing hydrofluoric acid (HF), hydrogen peroxide (H2O2) and NiSO4 at 40 °C. Field emission scanning electron microscope was used to characterize different morphologies of the textured Si. Optical reflection measurements of samples were carried out to compare the reflectivity of different morphologies. Results indicated that vertical as well as horizontal pores with nanosized diameters were bored in the Si wafer after 1 h treatment in the etching solution containing different molar ratios of H2O2 to HF. Increasing H2O2 concentration in electrochemical etching solution had a considerable influence on the morphology due to higher injection of positive charges from Ni atoms onto the Si surface. Optimized concentration of H2O2 led to formation of an antireflective layer with 2.1% reflectance of incident light.

  8. Aberration-corrected transmission electron microscopy analyses of GaAs/Si interfaces in wafer-bonded multi-junction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Häussler, Dietrich [Institute for Materials Science, Christian-Albrechts-University Kiel, Kaiserstraße 2, 24143 Kiel (Germany); Houben, Lothar [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Research Centre Juelich GmbH, 52425 Juelich (Germany); Essig, Stephanie [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg (Germany); Kurttepeli, Mert [Institute for Materials Science, Christian-Albrechts-University Kiel, Kaiserstraße 2, 24143 Kiel (Germany); Dimroth, Frank [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg (Germany); Dunin-Borkowski, Rafal E. [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Research Centre Juelich GmbH, 52425 Juelich (Germany); Jäger, Wolfgang, E-mail: wolfgang.jaeger@tf.uni-kiel.de [Institute for Materials Science, Christian-Albrechts-University Kiel, Kaiserstraße 2, 24143 Kiel (Germany)

    2013-11-15

    Aberration-corrected scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) investigations have been applied to investigate the structure and composition fluctuations near interfaces in wafer-bonded multi-junction solar cells. Multi-junction solar cells are of particular interest since efficiencies well above 40% have been obtained for concentrator solar cells which are based on III-V compound semiconductors. In this methodologically oriented investigation, we explore the potential of combining aberration-corrected high-angle annular dark-field STEM imaging (HAADF-STEM) with spectroscopic techniques, such as EELS and energy-dispersive X-ray spectroscopy (EDXS), and with high-resolution transmission electron microscopy (HR-TEM), in order to analyze the effects of fast atom beam (FAB) and ion beam bombardment (IB) activation treatments on the structure and composition of bonding interfaces of wafer-bonded solar cells on Si substrates. Investigations using STEM/EELS are able to measure quantitatively and with high precision the widths and the fluctuations in element distributions within amorphous interface layers of nanometer extensions, including those of light elements. Such measurements allow the control of the activation treatments and thus support assessing electrical conductivity phenomena connected with impurity and dopant distributions near interfaces for optimized performance of the solar cells. - Highlights: • Aberration-corrected TEM and EELS reveal structural and elemental profiles across GaAs/Si bond interfaces in wafer-bonded GaInP/GaAs/Si - multi-junction solar cells. • Fluctuations in elemental concentration in nanometer-thick amorphous interface layers, including the disrubutions of light elements, are measured using EELS. • The projected widths of the interface layers are determined on the atomic scale from STEM-HAADF measurements. • The effects of atom and ion beam activation treatment on the bonding

  9. MBO3: Eu3+ at the rate SiO2 (M = Y, Gd and Al) nano down conversion phosphors with superior asymmetric ratio and colour purity as spectral converters for c-Si solar cells

    International Nuclear Information System (INIS)

    Rambabu, U.; Munirathnam, N.R.; Prakash, T.L.

    2013-01-01

    Y 1-x BO 3 :Eu x 3+ (0.07 ≤ x ≤ 0.5 mol) and Y 0.72x (Gd x , Al x )BO 3 : Eu 3+ 0.3 (0.05 ± x ± 0.3 mol) powder phosphors have been synthesized by a novel co-precipitation technique followed by heat treatment. Luminescence optimization was done: by optimizing the dopant Eu 3+ -concentration, substitution of Y 3+ with Gd 3+ /Al 3+ and finally with SiO 2 shell coating. Due to nanosize particle distribution, the optimum activator (Eu 3+ ) concentration (30 mol %) was found to be extremely at higher level, compared to the bulk phosphors. The asymmetric ratio (Red/Orange) and color purity of the optimized phosphors, Y 0.7 BO 3 :Eu 0.3 3+ (with crystallite size, D = 32 nm) and Y 0.3 Gd 0.2 Al 0.2 BO 3 :Eu 3+ (D = 17 nm) were further enhanced with SiO 2 shell coating. Based on the systematic study, the nanophosphor Y 0.7 BO 3 :Eu 0.3 3+ at the rate SiO 2 with R/O ratio as 6.710 and color coordinates (x = 0.6612, y = 0.3357) was optimized as a remarkable phosphor having superior features for its application in thin transparent form as DC layer to improve the energy conversion efficiency of c-Si solar cells

  10. Alternative approaches of SiC and related wide bandgap materials in light emitting and solar cell applications

    International Nuclear Information System (INIS)

    Wellman, P; Syväjärvi, M; Ou, H

    2014-01-01

    Materials for optoelectronics give a fascinating variety of issues to consider. Increasingly important are white light emitting diode (LED) and solar cell materials. Profound energy savings can be done by addressing new materials. White light emitting diodes are becoming common in our lighting scene. There is a great energy saving in the transition from the light bulb to white light emitting diodes via a transition of fluorescent light tubes. However, the white LEDs still suffer from a variety of challenges in order to be in our daily use. Therefore there is a great interest in alternative lighting solutions that could be part of our daily life. All materials create challenges in fabrication. Defects reduce the efficiency of optical transitions involved in the light emitting diode materials. The donor-acceptor co-doped SiC is a potential light converter for a novel monolithic all-semiconductor white LED. In spite of considerable research, the internal quantum efficiency is far less than theoretically predicted and is likely a fascinating scientific field for studying materials growth, defects and optical transitions. Still, efficient Si-based light source represents an ongoing research field in photonics that requires high efficiency at room temperature, wavelength tuning in a wide wavelength range, and easy integration in silicon photonic devices. In some of these devices, rare earth doped materials is considered as a potential way to provide luminescence spanning in a wide wavelength range. Divalent and trivalent oxidation states of Eu provide emitting centers in the visible region. In consideration, the use of Eu in photonics requires Eu doped thin films that are compatible with CMOS technology but for example faces material science issues like a low Eu solid solubility in silica. Therefore approaches aim to obtain efficient light emission from silicon oxycarbide which has a luminescence in the visible range and can be a host material for rare earth ions. The

  11. Interfacial engineering of solution-processed Ni nanochain-SiO{sub x} (x < 2) cermets towards thermodynamically stable, anti-oxidation solar selective absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Xiaobai; Wang, Xiaoxin; Liu, Jifeng, E-mail: Jifeng.Liu@dartmouth.edu [Thayer School of Engineering, Dartmouth College, 14 Engineering Drive, Hanover, New Hampshire 03755 (United States); Zhang, Qinglin [Department of Chemical and Materials Engineering, University of Kentucky, 177 F. Paul Anderson Tower, Lexington, Kentucky 40506 (United States)

    2016-04-07

    Cermet solar thermal selective absorber coatings are an important component of high-efficiency concentrated solar power (CSP) receivers. The oxidation of the metal nanoparticles in cermet solar absorbers is a great challenge for vacuum-free operation. Recently, we have demonstrated that oxidation is kinetically retarded in solution processed, high-optical-performance Ni nanochain-SiO{sub x} cermet system compared to conventional Ni-Al{sub 2}O{sub 3} system when annealed in air at 450–600 °C for several hours. However, for long-term, high-temperature applications in CSP systems, thermodynamically stable antioxidation behavior is highly desirable, which requires new mechanisms beyond kinetically reducing the oxidation rate. Towards this goal, in this paper, we demonstrate that pre-operation annealing of Ni nanochain-SiO{sub x} cermets at 900 °C in N{sub 2} forms the thermodynamically stable orthorhombic phase of NiSi at the Ni/SiO{sub x} interfaces, leading to self-terminated oxidation at 550 °C in air due to this interfacial engineering. In contrast, pre-operation annealing at a lower temperature of 750 °C in N{sub 2} (as conducted in our previous work) cannot achieve interfacial NiSi formation directly, and further annealing in air at 450–600 °C for >4 h only leads to the formation of the less stable (metastable) hexagonal phase of NiSi. Therefore, the high-temperature pre-operation annealing is critical to form the desirable orthorhombic phase of NiSi at Ni/SiO{sub x} interfaces towards thermodynamically stable antioxidation behavior. Remarkably, with this improved interfacial engineering, the oxidation of 80-nm-diameter Ni nanochain-SiO{sub x} saturates after annealing at 550 °C in air for 12 h. Additional annealing at 550 °C in air for as long as 20 h (i.e., 32 h air annealing at >550 °C in total) has almost no further impact on the structural or optical properties of the coatings, the latter being very sensitive to any

  12. Stabilisation of a thin crystalline Si wafer solar cell using glass substrate; Duenne kristalline Silizium Wafer-Solarzelle mit Glastraeger stabilisiert

    Energy Technology Data Exchange (ETDEWEB)

    Muehlbauer, Maria

    2009-07-01

    An attempt was made to stabilise ultrathin crystalline silicon wafers (< 100 {mu}m) by a support material (BOROFLOAT33 by Schott Glas). It was found that the total serial resistance results mainly from the specific resistance of the back contact, and that especially the ultrathin solar cells have high recombination in the back. The ultrathin Si wafers also are slightly corrugated, which results in uneven joining of the Si wafer with the glass support. For optimisation, the solar cells of this specific types, with different thicknesses, were modelled in the one-dimensional simulation code PC1D, including all material-specific and electric properties. It was found that a slight reduction of the serial resistance will be enough for a significant improvement of the efficiency of the stabilized solar cell. With this knowledge, selective optimisation of the stabilised solar cells was possible, with the following results: 1. The improved temperature-time profile of the RTP step will improve the solar cell parameters for all Si thicknesses, which is assumed to be the result of better quality of the Al/Si back contact. 2. Thicker aluminium layers improved passivation on the back of solar cells with a thickness of 300 {mu}m and 120 {mu}m. In thinner stabilised solar cells, this measure resulted in enhanced formation of shunts and did not reduce the recombination rate on the back of the solar cell. 3. An additional optimisation step was the introduction of the so-called 'combined method' in which part of the aluminium layer is replaced by silkscreen paste. This combination, with adequate preparation, ensures uniform joining of the ultrathin silicon to the glass carrier. The resulting intermediate layers are highly homogeneous and have good fill factors and current densities for thin solar cells with a si thickness of 60 {mu}m. A decisive argument for the combined method is its near-100% reproducibility. [German] Ziel dieser Arbeit ist es sehr duenne kristalline

  13. Electrodeposition of nickel nano wire arrays

    International Nuclear Information System (INIS)

    Nur Ubaidah Saidin; Kok Kuan Ying; Ng Inn Khuan; Nurazila Mat Zali; Siti Salwa Zainal Abidin

    2010-01-01

    Synthesis, characterization and assembly of one-dimensional nickel nano wires prepared by template directed electrodeposition are discussed in this paper. Parallel arrays of high aspect ratio nickel nano wires were electrodeposited using electrolytes with different cations and pH. The nano wires were characterized using X-ray diffractometry and scanning electron microscopy. It was found that the orientations of the electro deposited Ni nano wires were governed by the deposition current and the electrolyte conditions. Free standing nickel nano wires can be obtained by dissolving the template. Due to the magnetic nature of the nano wires, magnetic alignment was employed to assemble and position the free standing nano wires in the device structure. (author)

  14. On the Importance of the Nonequilibrium Ionization of Si IV and O IV and the Line of Sight in Solar Surges

    Science.gov (United States)

    Nóbrega-Siverio, D.; Moreno-Insertis, F.; Martínez-Sykora, J.

    2018-05-01

    Surges are ubiquitous cool ejections in the solar atmosphere that often appear associated with transient phenomena like UV bursts or coronal jets. Recent observations from the Interface Region Imaging Spectrograph show that surges, although traditionally related to chromospheric lines, can exhibit enhanced emission in Si IV with brighter spectral profiles than for the average transition region (TR). In this paper, we explain why surges are natural sites to show enhanced emissivity in TR lines. We performed 2.5D radiative-MHD numerical experiments using the Bifrost code including the nonequilibrium (NEQ) ionization of silicon and oxygen. A surge is obtained as a by-product of magnetic flux emergence; the TR enveloping the emerged domain is strongly affected by NEQ effects: assuming statistical equilibrium would produce an absence of Si IV and O IV ions in most of the region. Studying the properties of the surge plasma emitting in the Si IV λ1402.77 and O IV λ1401.16 lines, we find that (a) the timescales for the optically thin losses and heat conduction are very short, leading to departures from statistical equilibrium, and (b) the surge emits in Si IV more and has an emissivity ratio of Si IV to O IV larger than a standard TR. Using synthetic spectra, we conclude the importance of line-of-sight effects: given the involved geometry of the surge, the line of sight can cut the emitting layer at small angles and/or cross it multiple times, causing prominent, spatially intermittent brightenings in both Si IV and O IV.

  15. New intelligent multifunctional SiO2/VO2 composite films with enhanced infrared light regulation performance, solar modulation capability, and superhydrophobicity.

    Science.gov (United States)

    Wang, Chao; Zhao, Li; Liang, Zihui; Dong, Binghai; Wan, Li; Wang, Shimin

    2017-01-01

    Highly transparent, energy-saving, and superhydrophobic nanostructured SiO 2 /VO 2 composite films have been fabricated using a sol-gel method. These composite films are composed of an underlying infrared (IR)-regulating VO 2 layer and a top protective layer that consists of SiO 2 nanoparticles. Experimental results showed that the composite structure could enhance the IR light regulation performance, solar modulation capability, and hydrophobicity of the pristine VO 2 layer. The transmittance of the composite films in visible region ( T lum ) was higher than 60%, which was sufficient to meet the requirements of glass lighting. Compared with pristine VO 2 films and tungsten-doped VO 2 film, the near IR control capability of the composite films was enhanced by 13.9% and 22.1%, respectively, whereas their solar modulation capability was enhanced by 10.9% and 22.9%, respectively. The water contact angles of the SiO 2 /VO 2 composite films were over 150°, indicating superhydrophobicity. The transparent superhydrophobic surface exhibited a high stability toward illumination as all the films retained their initial superhydrophobicity even after exposure to 365 nm light with an intensity of 160 mW . cm -2 for 10 h. In addition, the films possessed anti-oxidation and anti-acid properties. These characteristics are highly advantageous for intelligent windows or solar cell applications, given that they can provide surfaces with anti-fogging, rainproofing, and self-cleaning effects. Our technique offers a simple and low-cost solution to the development of stable and visible light transparent superhydrophobic surfaces for industrial applications.

  16. Solar-blind AlxGa1-xN/AlN/SiC photodiodes with a polarization-induced electron filter

    Science.gov (United States)

    Rodak, L. E.; Sampath, A. V.; Gallinat, C. S.; Chen, Y.; Zhou, Q.; Campbell, J. C.; Shen, H.; Wraback, M.

    2013-08-01

    Heterogeneous n-III-nitride/i-p silicon carbide (SiC) photodetectors have been demonstrated that enable the tailoring of the spectral response in the solar blind region below 280 nm. The negative polarization induced charge at the aluminum gallium nitride (AlxGa1-xN)/aluminum nitride (AlN) interface in conjunction with the positive polarization charge at the AlN/SiC interface creates a large barrier to carrier transport across the interface that results in the selective collection of electrons photoexcited to the Γ and L valleys of SiC while blocking the transport of electrons generated in the M valley. In addition, the AlxGa1-xN alloys act as transparent windows that enhance the collection of carriers generated by high energy photons in the fully depleted SiC absorption regions. These two factors combine to create a peak external quantum efficiency of 76% at 242 nm, along with a strong suppression of the long-wavelength response from 260 nm to 380 nm.

  17. Growth and characterization of low composition Ge, x in epi-Si1‑x Gex (x  ⩽  10%) active layer for fabrication of hydrogenated bottom solar cell

    Science.gov (United States)

    Ajmal Khan, M.; Sato, R.; Sawano, K.; Sichanugrist, P.; Lukianov, A.; Ishikawa, Y.

    2018-05-01

    Semiconducting epi-Si1‑x Ge x alloys have promising features as solar cell materials and may be equally important for some other semiconductor device applications. Variation of the germanium compositional, x in epi-Si1‑x Ge x , makes it possible to control the bandgap between 1.12 eV and 0.68 eV for application in bottom solar cells. A low proportion of Ge in SiGe alloy can be used for photovoltaic application in a bottom cell to complete the four-terminal tandem structure with wide bandgap materials. In this research, we aimed to use a low proportion of Ge—about 10%—in strained or relaxed c-Si1‑x Ge x /c-Si heterojunctions (HETs), with or without insertion of a Si buffer layer grown by molecular beam epitaxy, to investigate the influence of the relaxed or strained SiGe active layer on the performance of HET solar cells grown using the plasma enhanced chemical vapor deposition system. Thanks to the c-Si buffer layer at the hetero-interface, the efficiency of these SiGe based HET solar cells was improved from 2.3% to 3.5% (fully strained and with buffer layer). The Jsc was improved, from 8 mA cm‑2 to 15.46 mA cm‑2, which might be supported by strained c-Si buffer layer at the hetero-interface, by improving the crystalline quality.

  18. Evidence of significant down-conversion in a Si-based solar cell using CuInS2/ZnS core shell quantum dots

    Science.gov (United States)

    Gardelis, Spiros; Nassiopoulou, Androula G.

    2014-05-01

    We report on the increase of up to 37.5% in conversion efficiency of a Si-based solar cell after deposition of light-emitting Cd-free, CuInS2/ZnS core shell quantum dots on the active area of the cell due to the combined effect of down-conversion and the anti- reflecting property of the dots. We clearly distinguished the effect of down-conversion from anti-reflection and estimated an enhancement of up to 10.5% in the conversion efficiency due to down-conversion.

  19. Evidence of significant down-conversion in a Si-based solar cell using CuInS2/ZnS core shell quantum dots

    International Nuclear Information System (INIS)

    Gardelis, Spiros; Nassiopoulou, Androula G.

    2014-01-01

    We report on the increase of up to 37.5% in conversion efficiency of a Si-based solar cell after deposition of light-emitting Cd-free, CuInS 2 /ZnS core shell quantum dots on the active area of the cell due to the combined effect of down-conversion and the anti- reflecting property of the dots. We clearly distinguished the effect of down-conversion from anti-reflection and estimated an enhancement of up to 10.5% in the conversion efficiency due to down-conversion

  20. Morphological and optical properties changes in nanocrystalline Si (nc-Si) deposited on porous aluminum nanostructures by plasma enhanced chemical vapor deposition for Solar energy applications

    Energy Technology Data Exchange (ETDEWEB)

    Ghrib, M., E-mail: mondherghrib@yahoo.fr [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia); Gaidi, M.; Ghrib, T.; Khedher, N. [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia); Ben Salam, M. [L3M, Department of Physics, Faculty of Sciences of Bizerte, 7021 Zarzouna (Tunisia); Ezzaouia, H. [Laboratoire de Photovoltaique (L.P.V.), Centre de Recherche et des Technologies de l' Energie, BP 95, Hammam-Lif 2050 (Tunisia)

    2011-08-15

    Photoluminescence (PL) spectroscopy was used to determine the electrical band gap of nanocrystalline silicon (nc-Si) deposited by plasma enhancement chemical vapor deposition (PECVD) on porous alumina structure by fitting the experimental spectra using a model based on the quantum confinement of electrons in Si nanocrystallites having spherical and cylindrical forms. This model permits to correlate the PL spectra to the microstructure of the porous aluminum silicon layer (PASL) structure. The microstructure of aluminum surface layer and nc-Si films was systematically studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman spectroscopy and X-ray diffraction (XRD). It was found that the structure of the nanocrystalline silicon layer (NSL) is dependent of the porosity (void) of the porous alumina layer (PAL) substrate. This structure was performed in two steps, namely the PAL substrate was prepared using sulfuric acid solution attack on an Al foil and then the silicon was deposited by plasma enhanced chemical vapor deposition (PECVD) on it. The optical constants (n and k as a function of wavelength) of the deposited films were obtained using variable angle spectroscopic ellipsometry (SE) in the UV-vis-NIR regions. The SE spectrum of the porous aluminum silicon layer (PASL) was modeled as a mixture of void, crystalline silicon and aluminum using the Cauchy model approximation. The specific surface area (SSA) was estimated and was found to decrease linearly when porosity increases. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their micro-structural properties.

  1. Morphological and optical properties changes in nanocrystalline Si (nc-Si) deposited on porous aluminum nanostructures by plasma enhanced chemical vapor deposition for Solar energy applications

    International Nuclear Information System (INIS)

    Ghrib, M.; Gaidi, M.; Ghrib, T.; Khedher, N.; Ben Salam, M.; Ezzaouia, H.

    2011-01-01

    Photoluminescence (PL) spectroscopy was used to determine the electrical band gap of nanocrystalline silicon (nc-Si) deposited by plasma enhancement chemical vapor deposition (PECVD) on porous alumina structure by fitting the experimental spectra using a model based on the quantum confinement of electrons in Si nanocrystallites having spherical and cylindrical forms. This model permits to correlate the PL spectra to the microstructure of the porous aluminum silicon layer (PASL) structure. The microstructure of aluminum surface layer and nc-Si films was systematically studied by atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman spectroscopy and X-ray diffraction (XRD). It was found that the structure of the nanocrystalline silicon layer (NSL) is dependent of the porosity (void) of the porous alumina layer (PAL) substrate. This structure was performed in two steps, namely the PAL substrate was prepared using sulfuric acid solution attack on an Al foil and then the silicon was deposited by plasma enhanced chemical vapor deposition (PECVD) on it. The optical constants (n and k as a function of wavelength) of the deposited films were obtained using variable angle spectroscopic ellipsometry (SE) in the UV-vis-NIR regions. The SE spectrum of the porous aluminum silicon layer (PASL) was modeled as a mixture of void, crystalline silicon and aluminum using the Cauchy model approximation. The specific surface area (SSA) was estimated and was found to decrease linearly when porosity increases. Based on this full characterization, it is demonstrated that the optical characteristics of the films are directly correlated to their micro-structural properties.

  2. Development of scientific and technological basis for the fabrication of thin film solar cells on the basis of a-Si:H and {mu}c-Si:H using the 'hot-wire' deposition technique. Final report; Entwicklung wissenschaftlicher und technischer Grundlagen fuer die Herstellung von Duennschichtsolarzellen auf der Basis des a-Si:H und {mu}c-Si:H mit der 'Hot-Wire'-Depositionstechnik. Abschlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Schroeder, B.

    2002-01-22

    Two new deposition systems were realized enabling the entire and respectively, large area deposition of a-Si:H based solar cells using the so called 'hot-wire' (HW) CVD. The deposition conditions for appropriate n- and p-doped a-Si:H and {mu}c-Si:H layers have been developed. For the first time in the world a-Si:H based pin solar cells were entirely deposited by the HWCVD method. A maximum initial conversion efficiency of {eta}{sub initial}=8.9% was obtained. After the development of a suitable p/n-tunnel/recombination junction pin-pin tandem structures with a-Si:H absorbers could be entirely fabricated by the HWCVD for the first time in the world, too. A conversion efficiency of {eta}=7% was measured for the tandem cell, after some structural degradation took place. In general, the stability of the HWCVD solar cells is not satisfactory, what could be attributed to a structural instability of the HWCVD-p-layers. For the first time we have deposited nip solar cells on stainless steel substrates entirely by HWCVD ({eta}{sub initial}>6%). The incorporation of {mu}c-Si:H absorber layers by HWCVD or ECWR-PECVD into pin solar cells was not successfull until now. Large area deposition of a-Si:H films has been performed in a simple vacuum vessel. Under consideration of appropriate filament and gas supply geometry as well as simulation calculations a good electronic quality and a film thickness uniformity of {delta}d={+-}2.5% of the material was obtained. i-layers for small area solar cells on an area of 20 x 20 cm{sup 2} have been deposited which could be completed to solar cells with very uniform conversion efficiencies of {eta}{sub initial} = 6,1{+-}0.2%. This result represents a proof of concept for the large area deposition of a-Si:H based solar cells using the HWCVD. Also for the first time the HWCVD was used for the deposition of emitter layers on c-Si-wafers to realize hetero solar cells. Hetero solar cells with amorphous, microcrystalline and epitaxial n

  3. Textured surface boron-doped ZnO transparent conductive oxides on polyethylene terephthalate substrates for Si-based thin film solar cells

    International Nuclear Information System (INIS)

    Chen Xinliang; Lin Quan; Ni Jian; Zhang Dekun; Sun Jian; Zhao Ying; Geng Xinhua

    2011-01-01

    Textured surface boron-doped zinc oxide (ZnO:B) thin films were directly grown via low pressure metal organic chemical vapor deposition (LP-MOCVD) on polyethylene terephthalate (PET) flexible substrates at low temperatures and high-efficiency flexible polymer silicon (Si) based thin film solar cells were obtained. High purity diethylzinc and water vapors were used as source materials, and diborane was used as an n-type dopant gas. P-i-n silicon layers were fabricated at ∼ 398 K by plasma enhanced chemical vapor deposition. These textured surface ZnO:B thin films on PET substrates (PET/ZnO:B) exhibit rough pyramid-like morphology with high transparencies (T ∼ 80%) and excellent electrical properties (Rs ∼ 10 Ω at d ∼ 1500 nm). Finally, the PET/ZnO:B thin films were applied in flexible p-i-n type silicon thin film solar cells (device structure: PET/ZnO:B/p-i-n a-Si:H/Al) with a high conversion efficiency of 6.32% (short-circuit current density J SC = 10.62 mA/cm 2 , open-circuit voltage V OC = 0.93 V and fill factor = 64%).

  4. Decrease in electrical contact resistance of Sb-doped n+-BaSi2 layers and spectral response of an Sb-doped n+-BaSi2/undoped BaSi2 structure for solar cells

    Science.gov (United States)

    Kodama, Komomo; Takabe, Ryota; Yachi, Suguru; Toko, Kaoru; Suemasu, Takashi

    2018-03-01

    We investigated how the electron concentration n in a 300-nm-thick Sb-doped n+-BaSi2 layer grown by molecular beam epitaxy affected the contact resistance R C to surface electrodes (Al, indium-tin-oxide). As the n of n-BaSi2 increased, R C decreased and reached a minimum of 0.019 Ω cm2 at n = 2.4 × 1018 cm-3 for the Al electrodes. This value was more than 1 order of magnitude smaller than that obtained for Al/B-doped p-BaSi2. We believe that this significant decrease in R C came from Sb segregation. Furthermore, the internal quantum efficiency (IQE) spectrum was evaluated for an Sb-doped n+-BaSi2 (20 nm)/undoped BaSi2 (500 nm)/n+-Si(111) structure. Its IQE reached as high as ˜50% over a wide wavelength range under a small bias voltage of 0.1 V applied between the top and bottom electrodes.

  5. Using chemical wet-etching methods of textured AZO films on a-Si:H solar cells for efficient light trapping

    International Nuclear Information System (INIS)

    Lin, Guo-Sheng; Li, Chien-Yu; Huang, Kuo-Chan; Houng, Mau-Phon

    2015-01-01

    In this paper, Al-doped ZnO (AZO) films are deposited on glasses substrate by RF magnetron sputtering. The optical, electrical and morphological properties of AZO films textured by wet-etching with different etchants, H 3 PO 4 , HCl, and HNO 3 are studied. It is found that the textured structure could enhance the light scattering and light trapping ability of amorphous silicon solar cells. The textured AZO film etched with HNO 3 exhibits optimized optical properties (T% ≧ 80% over entire wavelength, haze ratio > 40% at 550 nm wavelength) and excellent electrical properties (ρ = 5.86 × 10 −4 Ωcm). Scanning electron microscopy and Atomic force microscopy are used to observe surface morphology and average roughness of each textured AZO films. Finally, the textured AZO films etched by H 3 PO 4 , HCl and HNO 3 were applied to front electrode layer for p–i–n amorphous silicon solar cells. The highest conversion efficiency of amorphous silicon solar cell fabricated on HNO 3 -etched AZO film was 7.08% with open-circuit voltage, short-circuit current density and fill factor of 895 mV, 14.92 mA/cm 2 and 0.56, respectively. It shows a significantly enhancement in the short-circuit current density and conversion efficiency by 16.2% and 20.2%, respectively, compared with the solar cell fabricated on as-grown AZO film. - Highlights: • The textured surface enhances light scattering and light trapping ability. • The HNO 3 -etched AZO film exhibits excellent optical and electrical properties. • The efficiency of a-Si:H solar cell fabricated on HNO 3 -etched AZO film was 7.08%. • The short-circuit current density enhances to 16.2%. • The conversion efficiency enhances to 20.2%

  6. Photovoltaic performance of bifacial dye sensitized solar cell using chemically healed binary ionic liquid electrolyte solidified with SiO2 nanoparticles

    International Nuclear Information System (INIS)

    Cosar, Burak; Icli, Kerem Cagatay; Yavuz, Halil Ibrahim; Ozenbas, Macit

    2013-01-01

    Highlights: ► A bifacial DSSC is realized and irradiated from front and rear sides. ► Maximum efficiency was found for 70% PMII/30% (EMIB(CN) 4 ) electrolyte composition. ► A significant increase in photocurrent using 0.1 M GuSCN and 0.4 M NMB was observed. ► Addition of SiO 2 nanoparticles to the electrolyte enhanced photovoltaic efficiency. ► Dispersed SiO 2 particles are found to be more efficient compared to SiO 2 overlayer. - Abstract: In this study, we investigated the effect of electrolyte composition, photoanode thickness, and the additions of GuSCN (guanidinium thiocyanate), NMB (N-methylbenimidazole), and SiO 2 on the photovoltaic performance of DSSCs (dye sensitized solar cells). A bifacial DSSC is realized and irradiated from front and rear sides. The devices give maximum photovoltaic efficiencies for 70% PMII (1-propyl-3-methyl-imidazolium iodide)/30% (EMIB(CN) 4 ) (1-ethyl-3-methyl-imidazolium tetracyanoborate) electrolyte composition and 10 μm thick photoanode coating which is considered to be the ideal coating thickness for the diffusion length of electrolyte and dye absorption. A significant increase in the photocurrent for DSSCs with optimum molarity of 0.1 M GuSCN was observed due to decreased recombination which is believed to be surface passivation effect at photoanode electrolyte interface suppressing recombination rate. Moreover, optimum NMB molarity was found to be 0.4 for maximum efficiency. Addition of SiO 2 to the electrolyte both as an overlayer and dispersed particles enhanced rear side illuminated cells where dispersed particles are found to be more efficient for the front side illuminated cells due to additional electron transport properties. Best rear side illuminated cell efficiency was 3.2% compared to front side illuminated cell efficiency of 4.2% which is a promising result for future rear side dye sensitized solar cell applications where front side illumination is not possible like tandem structures and for cells

  7. Charge collection efficiency in SI GaAs grown from melts with variable composition as a material for solar neutrino detection

    CERN Document Server

    Verbitskaya, E; Ivanov, A; Strokan, N; Vasilev, V; Markov, A; Polyakov, A; Gavrin, V; Kozlova, Y; Veretenkin, E; Bowles, T J

    2000-01-01

    The results on electrical characteristics and charge collection efficiency in the detectors from bulk SI GaAs developed as a material for solar neutrino spectroscopy are presented. SI GaAs crystals were grown by the Czochralski method. The changes in the stoichiometric components are permanently controlled. It is shown that the performance of GaAs p sup + -i-n sup + structures provided the range of operational reverse voltage up to 1 kV. Measurement of deep level spectra and their analysis reveal the dominant deep levels - hole traps E sub v +0.51 and +0.075 eV in GaAs grown from stoichiometric and nonstoichiometric melts, respectively. Investigation of carrier transport properties and bulk homogeneity evinced in charge collection efficiency has shown advantageous results for SI GaAs grown from stoichiometric melt. The reduction of carrier transport parameters and charge collection efficiency in GaAs grown from nonstoichiometric melt is analyzed taking into consideration formation of the hole trap E sub v +0....

  8. Charge collection efficiency in SI GaAs grown from melts with variable composition as a material for solar neutrino detection

    International Nuclear Information System (INIS)

    Verbitskaya, E.; Eremin, V.; Ivanov, A.; Strokan, N.; Vasilev, V.; Markov, A.; Polyakov, A.; Gavrin, V.; Kozlova, Yu.; Veretenkin, E.; Bowles, T.J.

    2000-01-01

    The results on electrical characteristics and charge collection efficiency in the detectors from bulk SI GaAs developed as a material for solar neutrino spectroscopy are presented. SI GaAs crystals were grown by the Czochralski method. The changes in the stoichiometric components are permanently controlled. It is shown that the performance of GaAs p + -i-n + structures provided the range of operational reverse voltage up to 1 kV. Measurement of deep level spectra and their analysis reveal the dominant deep levels - hole traps E v +0.51 and +0.075 eV in GaAs grown from stoichiometric and nonstoichiometric melts, respectively. Investigation of carrier transport properties and bulk homogeneity evinced in charge collection efficiency has shown advantageous results for SI GaAs grown from stoichiometric melt. The reduction of carrier transport parameters and charge collection efficiency in GaAs grown from nonstoichiometric melt is analyzed taking into consideration formation of the hole trap E v +0.075 eV, presumably assigned to Ga antisite and its influence on the concentration of the ionized deep donor level EL2 +

  9. Hole-Collection Mechanism in Passivating Metal-Oxide Contacts on Si Solar Cells: Insights From Numerical Simulations

    KAUST Repository

    Vijayan, Ramachandran Ammapet; Essig, Stephanie; De Wolf, Stefaan; Ramanathan, Bairava Ganesh; Loper, Philipp; Ballif, Christophe; Varadharajaperumal, Muthubalan

    2018-01-01

    Silicon heterojunction solar cells enable high conversion efficiencies, thanks to their passivating contacts which consist of layered stacks of intrinsic and doped amorphous silicon. However, such contacts may reduce the photo current, when present

  10. Integrated MoSe2 with n+p-Si photocathodes for solar water splitting with high efficiency and stability

    Science.gov (United States)

    Huang, Guanping; Mao, Jie; Fan, Ronglei; Yin, Zhihao; Wu, Xi; Jie, Jiansheng; Kang, Zhenhui; Shen, Mingrong

    2018-01-01

    Many earth-abundant transition metal dichalcogenides (TMDs) have been employed as catalysts for H2 evolution reaction (HER); however, their impactful integration onto photocathodes for photoelectrochemical (PEC) HER is less developed. In this study, we directly sputtered a MoSe2 catalyst onto an n+p-Si photocathode for efficient and stable PEC-HER. An onset potential of 0.4 V vs. RHE, a saturated photocurrent of 29.3 mA/cm2, a fill factor of 0.32, and an energy conversion efficiency of 3.8% were obtained under 100 mA/cm2 Xe lamp illumination. Such superior PEC properties were ascribed to the nearly vertically standing two dimensional MoSe2 rough surface layer and the sharp interface between Si and MoSe2 with small charge transfer resistance. The balance between the reflectivity of the electrode surface and the absorptivity of MoSe2 was also discussed. In addition, the MoSe2 layer can protect the n+p-Si photocathode with a 120 h stability due to its initial growth on Si with high flatness and compactness. This study provides a path to the effective and scalable growth of TMDs onto the Si photocathode aiming for high efficiency and stability.

  11. Heterojunction between the delafossite TCO n-copper indium oxide and p-Si for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Keerthi, K.; Nair, B. G.; Philip, R. R., E-mail: reenatara@rediffmail.com [Thin film research lab, Union Christian College, Aluva, Cochin, Kerala (India); Masuzawa, T.; Saito, I.; Okano, K. [Department Of Material Science, International Christian University (Japan); Johns, N. [Indian Institute of Technology, Bombay (India)

    2016-05-23

    Junction formation of n-copper indium oxide (CIO) (extrinsically undoped) with p-Si leading to conversion of photons in the UV-Vis range is being reported for the first time. I-V and temporal photoconductivity data confirm positively the carrier generation in CIO under irradiation while optical absorbance data furnish its band gap to be ~ 3.1 eV. Ultraviolet photoelectron spectroscopy is used to study the electronic band structure of CIO on Si and to construct a schematic diagram of the hetero-junction to explain the observed photovoltaic phenomena.

  12. Growth of KOH etched AZO nanorods and investigation of its back scattering effect in thin film a-Si solar cell

    Science.gov (United States)

    Sharma, Jayasree Roy; Mitra, Suchismita; Ghosh, Hemanta; Das, Gourab; Bose, Sukanta; Mandal, Sourav; Mukhopadhyay, Sumita; Saha, Hiranmay; Barua, A. K.

    2018-02-01

    In order to increase the stabilized efficiencies of thin film silicon (TFS) solar cells it is necessary to use better light management techniques. Texturization by etching of sputtered aluminum doped zinc oxide (Al:ZnO or AZO) films has opened up a variety of promises to optimize light trapping schemes. RF sputtered AZO film has been etched by potassium hydroxide (KOH). A systematic study of etching conditions such as etchant concentration, etching time, temperature management etc. have been performed in search of improved electrical and optical performances of the films. The change in etching conditions has exhibited a noticeable effect on the structure of AZO films for which the light trapping effect differs. After optimizing the etching conditions, nanorods have been found on the substrate. Hence, nanorods have been developed only by chemical etching, rather than the conventional development method (hydrothermal method, sol-gel method, electrolysis method etc.). The optimized etched substrate has 82% transmittance, moderate haze in the visible range and sheet resistance ∼13 (Ω/□). The developed nanorods (optimized etched substrate) provide better light trapping within the cell as the optical path length has been increased by using the nanorods. This provides an effect on carrier collection as well as the efficiency in a-Si solar cells. Finite difference time domain (FDTD) simulations have been performed to observe the light trapping by AZO nanorods formed on sputtered AZO films. For a p-i-n solar cell developed on AZO nanorods coated with sputtered AZO films, it has been found through simulations that, the incident light is back scattered into the absorbing layer, leading to an increase in photogenerated current and hence higher efficiency. It has been found that, the light that passes through the nanorods is not getting absorbed and maximum amount of light is back scattered towards the solar cell.

  13. Process Optimization for High Efficiency Heterojunction c-Si Solar Cells Fabrication Using Hot-Wire Chemical Vapor Deposition: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Ai, Y.; Yuan, H. C.; Page, M.; Nemeth, W.; Roybal, L.; Wang, Q.

    2012-06-01

    The researchers extensively studied the effects of annealing or thermal history of cell process on the minority carrier lifetimes of FZ n-type c-Si wafers with various i-layer thicknesses from 5 to 60 nm, substrate temperatures from 100 to 350 degrees C, doped layers both p- and n-types, and transparent conducting oxide (TCO).

  14. Al@SiO2 Core-Shell Microflakes as Metal-Based Light Scattering Layer in Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Chi-Hui Chien

    2011-01-01

    Full Text Available A metal-based light scattering layer (MLSL for dye-sensitized solar cells (DSSCs is formed from Al@SiO2 core-shell microflakes prepared and coated on a thin porous TiO2 electrode (approximately 4 μm thick. The DSSC corresponding to a TiO2 electrode with an MLSL exhibits a low electron transport resistance in the TiO2/electrolyte interface. Electron collection efficiency is greatly improved. Photovoltaic performance measurements indicate that the power conversion efficiency of the DSSC with the MLSL doubled from 1.37% to 2.96% (for an active area of 0.25 cm2, which is better than the 2.1% achieved by a DSSC with a conventional TiO2-based light scattering layer (TLSL obtained under identical experimental conditions.

  15. Advanced interface modelling of n-Si/HNO3 doped graphene solar cells to identify pathways to high efficiency

    Science.gov (United States)

    Zhao, Jing; Ma, Fa-Jun; Ding, Ke; Zhang, Hao; Jie, Jiansheng; Ho-Baillie, Anita; Bremner, Stephen P.

    2018-03-01

    In graphene/silicon solar cells, it is crucial to understand the transport mechanism of the graphene/silicon interface to further improve power conversion efficiency. Until now, the transport mechanism has been predominantly simplified as an ideal Schottky junction. However, such an ideal Schottky contact is never realised experimentally. According to literature, doped graphene shows the properties of a semiconductor, therefore, it is physically more accurate to model graphene/silicon junction as a Heterojunction. In this work, HNO3-doped graphene/silicon solar cells were fabricated with the power conversion efficiency of 9.45%. Extensive characterization and first-principles calculations were carried out to establish an advanced technology computer-aided design (TCAD) model, where p-doped graphene forms a straddling heterojunction with the n-type silicon. In comparison with the simple Schottky junction models, our TCAD model paves the way for thorough investigation on the sensitivity of solar cell performance to graphene properties like electron affinity. According to the TCAD heterojunction model, the cell performance can be improved up to 22.5% after optimizations of the antireflection coatings and the rear structure, highlighting the great potentials for fabricating high efficiency graphene/silicon solar cells and other optoelectronic devices.

  16. Preliminary results from the oribiting solar observatory 8: Velocities in the solar chromosphere observed in the Si II lambda1816 line

    International Nuclear Information System (INIS)

    Chipman, E.G.; Bruner, E.C. Jr.; Shine, R.A.; Lites, B.W.; Rottman, G.J.; Athay, R.G.; White, O.R.

    1976-01-01

    The University of Colorado instrument on OSO-8 was used to measure repeated line profiles of the Si II lambda1816 line over quiet and active areas of approximately 20'' by 5'' during entire orbits of 60 minutes. Velocity oscillations with periods near 300 s are observed in approximately half of the time series, and periods near 180 s are sometimes observed. Periodic intensity variations are also observed at both of these periods. For both periods, the intensity leads the velocity in phase by approximately 30degree

  17. Multi-frequency EDMR studies of light-activated paramagnetic centers in μc-Si:H thin-film solar cells

    International Nuclear Information System (INIS)

    Meier, Christoph

    2014-01-01

    This thesis presents a comprehensive study of paramagnetic centers in fully-processed microcrystalline silicon (μc-Si:H) thin-film solar cells. The heterogeneous material gives rise to a complex band structure with deep defects in the middle of the energy band gap as well as localized states close to the energy band edges. They can act as recombination centers and traps and, thereby, influence the charge transport of photogenerated charge carriers. Thus, they diminish the performance of the cell. To reduce the disadvantageous influence of the defect states on the cell efficiency, a detailed understanding of the charge transport processes via these states is necessary. In this work, light-activated paramagnetic centers are studied with electrically detected magnetic resonance (EDMR) at various microwave frequencies. This technique combines electron paramagnetic resonance spectroscopy (EPR) with the photocurrent measurement in the solar cell, thus, delivering information about the transport processes and magnetic parameters of the involved defect states. Multi-frequency EDMR at low temperatures reveals four paramagnetic states in μc-Si:H. Dangling bond (db) defects and holes in valence band tail (h) states are located in the disordered phase, whereas so-called CE and V states originate from the crystalline phase. The multi-frequency approach allows for a separation of field-dependent and -independent line widths. All EDMR signals are affected by line broadening due to spin-spin interaction, which could be used to estimate mean inter-spin distances of around ∼ 0.5 nm for the V center and of ∼ 1-2 nm for the remaining centers. Based on the strong spin-spin coupling and on transient nutation experiments the V signal could be correlated with a vacancy site in its excited triplet state. From the particular properties of the CE line it was concluded that the corresponding states are located in inversion layers and potential wells close to the conduction band of

  18. Evidence of redshifts in the average solar line profiles of C IV and Si IV from OSO-8 observations

    Science.gov (United States)

    Roussel-Dupre, D.; Shine, R. A.

    1982-01-01

    Line profiles of C IV and Si V obtained by the Colorado spectrometer on OSO-8 are presented. It is shown that the mean profiles are redshifted with a magnitude varying from 6-20 km/s, and with a mean of 12 km/s. An apparent average downflow of material in the 50,000-100,000 K temperature range is measured. The redshifts are observed in the line center positions of spatially and temporally averaged profiles and are measured either relative to chromospheric Si I lines or from a comparison of sun center and limb profiles. The observations of 6-20 km/s redshifts place constraints on the mechanisms that dominate EUV line emission since it requires a strong weighting of the emission in regions of downward moving material, and since there is little evidence for corresponding upward moving materials in these lines.

  19. Impact of the homogeneous junction breakdown in IBC solar cells on the passivation quality of Al 2 O 3 and SiO 2 : degradation and regeneration behavior

    KAUST Repository

    Müller, Ralph

    2017-09-22

    Within the last years, many different approaches for the simplified fabrication of interdigitated back-contact (IBC) solar cells have been developed. Most of those concepts result in emitter and back-surface field (BSF) regions that are in direct contact to each other which leads to a controlled breakdown under reverse bias at the pn junction. In this work, the influence of the reverse breakdown on the passivation quality of AlO and SiO at the pn junction is investigated, not only shedding light on the degradation but also on the regeneration behavior of the cells. It was found that cells with AlO passivation on the back side degrade during reverse breakdown whereas sister cells with SiO passivation were rather unaffected. Consequently, the degradation seems to be related to the passivation layer. However, it is shown that the passivation can be regenerated even under normal operation condition. A possible explanation is the discharging of interface traps, which are getting recharged already at room temperature.

  20. The effect of H2O gas on volatilities of planet-forming major elements. I - Experimental determination of thermodynamic properties of Ca-, Al-, and Si-hydroxide gas molecules and its application to the solar nebula

    Science.gov (United States)

    Hashimoto, Akihiko

    1992-01-01

    The vapor pressures of Ca(OH)2(g), Al(OH)3(g), and Si(OH)4(g) molecules in equilibrium with solid calcium-, aluminum, and silicon-oxides, respectively, were determined, and were used to derive the heats of formation and entropies of these species, which are expected to be abundant under the currently postulated physical conditions in the primordial solar nebula. These data, in conjunction with thermodynamic data from literature, were used to calculate the relative abundances of M, MO(x), and M(OH)n gas species and relative volatilities of Fe, Mg, Si, Ca, and Al for ranges of temperature, total pressure, and H/O abundance ratio corresponding to the plausible ranges of physical conditions in the solar nebula. The results are used to explain how Ca and Al could have evaporated from Ca,Al-rich inclusions in carbonaceous chondrites, while Si, Mg, and Fe condensed onto them during the preaccretion alteration of CAIs.

  1. Design of a plasmonic back reflector using Ag nanoparticles with a mirror support for an a-Si:H solar cell

    Directory of Open Access Journals (Sweden)

    Chanse D. Hungerford

    2017-07-01

    Full Text Available Plasmonic nanoparticles have unique optical properties and these properties are affected by any surrounding structures, or lack thereof. Nanoparticles are often added to a device without fully assessing the effect that each interface will have on the nanoparticle’s response. In this work, we simulate and fabricate devices utilizing hemispherical nanoparticles integrated into the back reflector of an amorphous silicon solar cell. 3D finite difference time domain simulations were used to calculate the optical absorption of a 300nm amorphous silicon layer as a function of the size of the nanoparticles, the distance between the nanoparticles and the active layer, and the distance between the nanoparticles and the mirror. Two transparent conducting oxides, aluminum doped zinc oxide and indium tin oxide, are investigated to determine the importance of the material properties between the nanoparticles and mirror. Silver hemispherical nanoparticles with a diameter of 150nm placed directly on the a-Si:H and a 60nm aluminum doped zinc oxide layer between the nanoparticles and the mirror lead to a maximum absorption increase of 7.2% in the 500nm to 800nm wavelength range. Experimental devices confirmed the trends predicted by theory but did not achieve enhancement, likely due to fabrication challenges. Fabricating a solar cell with the simulated design requires a high quality transparent conductive oxide and high control over the nanoparticle size distribution.

  2. Solution-processed highly conductive PEDOT:PSS/AgNW/GO transparent film for efficient organic-Si hybrid solar cells.

    Science.gov (United States)

    Xu, Qiaojing; Song, Tao; Cui, Wei; Liu, Yuqiang; Xu, Weidong; Lee, Shuit-Tong; Sun, Baoquan

    2015-02-11

    Hybrid solar cells based on n-Si/poly(3,4-ethylenedioxythiophene):poly(styrene- sulfonate) (PEDOT:PSS) heterojunction promise to be a low cost photovoltaic technology by using simple device structure and easy fabrication process. However, due to the low conductivity of PEDOT:PSS, a metal grid deposited by vacuum evaporation method is still required to enhance the charge collection efficiency, which complicates the device fabrication process. Here, a solution-processed graphene oxide (GO)-welded silver nanowires (AgNWs) transparent conductive electrode (TCE) was employed to replace the vacuum deposited metal grid. A unique "sandwich" structure was developed by embedding an AgNW network between PEDOT:PSS and GO with a figure-of-merit of 8.6×10(-3) Ω(-1), which was even higher than that of sputtered indium tin oxide electrode (6.6×10(-3) Ω(-1)). A champion power conversion efficiency of 13.3% was achieved, because of the decreased series resistance of the TCEs as well as the enhanced built-in potential (Vbi) in the hybrid solar cells. The TCEs were obtained by facile low-temperature solution process method, which was compatible with cost-effective mass production technology.

  3. Using chemical wet-etching methods of textured AZO films on a-Si:H solar cells for efficient light trapping

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Guo-Sheng; Li, Chien-Yu; Huang, Kuo-Chan; Houng, Mau-Phon, E-mail: mphoung@eembox.ncku.edu.tw

    2015-06-15

    In this paper, Al-doped ZnO (AZO) films are deposited on glasses substrate by RF magnetron sputtering. The optical, electrical and morphological properties of AZO films textured by wet-etching with different etchants, H{sub 3}PO{sub 4}, HCl, and HNO{sub 3} are studied. It is found that the textured structure could enhance the light scattering and light trapping ability of amorphous silicon solar cells. The textured AZO film etched with HNO{sub 3} exhibits optimized optical properties (T% ≧ 80% over entire wavelength, haze ratio > 40% at 550 nm wavelength) and excellent electrical properties (ρ = 5.86 × 10{sup −4} Ωcm). Scanning electron microscopy and Atomic force microscopy are used to observe surface morphology and average roughness of each textured AZO films. Finally, the textured AZO films etched by H{sub 3}PO{sub 4}, HCl and HNO{sub 3} were applied to front electrode layer for p–i–n amorphous silicon solar cells. The highest conversion efficiency of amorphous silicon solar cell fabricated on HNO{sub 3}-etched AZO film was 7.08% with open-circuit voltage, short-circuit current density and fill factor of 895 mV, 14.92 mA/cm{sup 2} and 0.56, respectively. It shows a significantly enhancement in the short-circuit current density and conversion efficiency by 16.2% and 20.2%, respectively, compared with the solar cell fabricated on as-grown AZO film. - Highlights: • The textured surface enhances light scattering and light trapping ability. • The HNO{sub 3}-etched AZO film exhibits excellent optical and electrical properties. • The efficiency of a-Si:H solar cell fabricated on HNO{sub 3}-etched AZO film was 7.08%. • The short-circuit current density enhances to 16.2%. • The conversion efficiency enhances to 20.2%.

  4. 2D simulation and performance evaluation of bifacial rear local contact c-Si solar cells under variable illumination conditions

    KAUST Repository

    Katsaounis, Theodoros

    2017-09-18

    A customized 2D computational tool has been developed to simulate bifacial rear local contact PERC type PV structures based on the numerical solution of the transport equations through the finite element method. Simulations were performed under various device material parameters and back contact geometry configurations in order to optimize bifacial solar cell performance under different simulated illumination conditions. Bifacial device maximum power output was also compared with the monofacial equivalent one and the industrial standard Al-BSF structure. The performance of the bifacial structure during highly diffused irradiance conditions commonly observed in the Middle East region due to high concentrations of airborne dust particles was also investigated. Simulation results demonstrated that such conditions are highly favorable for the bifacial device because of the significantly increased diffuse component of the solar radiation which enters the back cell surface.

  5. 2D simulation and performance evaluation of bifacial rear local contact c-Si solar cells under variable illumination conditions

    KAUST Repository

    Katsaounis, Theodoros; Kotsovos, Konstantinos; Gereige, Issam; Al-Saggaf, Ahmed; Tzavaras, Athanasios

    2017-01-01

    A customized 2D computational tool has been developed to simulate bifacial rear local contact PERC type PV structures based on the numerical solution of the transport equations through the finite element method. Simulations were performed under various device material parameters and back contact geometry configurations in order to optimize bifacial solar cell performance under different simulated illumination conditions. Bifacial device maximum power output was also compared with the monofacial equivalent one and the industrial standard Al-BSF structure. The performance of the bifacial structure during highly diffused irradiance conditions commonly observed in the Middle East region due to high concentrations of airborne dust particles was also investigated. Simulation results demonstrated that such conditions are highly favorable for the bifacial device because of the significantly increased diffuse component of the solar radiation which enters the back cell surface.

  6. Balancing electrical and optical losses for efficient Si-perovskite 4-terminal solar cells with solution processed percolation electrodes.

    KAUST Repository

    Ramírez Quiroz, César Omar

    2018-01-15

    The unprecedented efficiency upraise of perovskite-based photovoltaics has sparked the interest in semi-transparent devices, particularly for tandem structures. Despite promising reports regarding efficiency and reduced parasitic absorption, many devices still rely on processes from the gas phase, compromising both applicability and cost factors. Here, we report all-solution perovskite solar cells with improved infrared transparency ideally suited as top-cell for efficient multi-junction device configurations. We demonstrate the functionality of Copper (I) thiocyanate as antireflective layer and selective contact between the transparent conductive oxide and the perovskite as key factor. This concept allows us to fabricate an opaque device with steady state efficiency as high as 20.1%. By employing silver nanowires with robust environmental stability as bottom electrode, we demonstrate different regimes of device performance that can be described through a classical percolation model, leading to semi-transparent solar cells with efficiencies of up to 17.1%. In conjunction with the implementation of an infrared-tuned transparent conductive oxide contact deposited on UV-fused silica, we show a full device average transmittance surpassing 84% between 800 and 1100 nm (as opposed to 77% with PEDOT:PSS as selective contact). Finally, we mechanically staked optimized perovskite devices on top of high performing PERL and IBC silicon architectures. The imputed output efficiency of the 4-terminal measured perovskite-silicon solar cell was 26.7% and 25.2% for PERL-perovskite and IBC-perovskite, respectively.

  7. Balancing electrical and optical losses for efficient Si-perovskite 4-terminal solar cells with solution processed percolation electrodes.

    KAUST Repository

    Ramí rez Quiroz, Cé sar Omar; Shen, Yilei; Salvador, Michael; Forberich, Karen; Schrenker, Nadine; Spyropulos, George D.; Huemueller, Thomas; Wilkinson, Benjamin; Kirchartz, Thomas; Spiecker, Erdmann; Verlinden, Pierre J.; Zhang, Xueling; Green, Martin; Ho-Baillie, Anita Wing Yi; Brabec, Christoph J

    2018-01-01

    The unprecedented efficiency upraise of perovskite-based photovoltaics has sparked the interest in semi-transparent devices, particularly for tandem structures. Despite promising reports regarding efficiency and reduced parasitic absorption, many devices still rely on processes from the gas phase, compromising both applicability and cost factors. Here, we report all-solution perovskite solar cells with improved infrared transparency ideally suited as top-cell for efficient multi-junction device configurations. We demonstrate the functionality of Copper (I) thiocyanate as antireflective layer and selective contact between the transparent conductive oxide and the perovskite as key factor. This concept allows us to fabricate an opaque device with steady state efficiency as high as 20.1%. By employing silver nanowires with robust environmental stability as bottom electrode, we demonstrate different regimes of device performance that can be described through a classical percolation model, leading to semi-transparent solar cells with efficiencies of up to 17.1%. In conjunction with the implementation of an infrared-tuned transparent conductive oxide contact deposited on UV-fused silica, we show a full device average transmittance surpassing 84% between 800 and 1100 nm (as opposed to 77% with PEDOT:PSS as selective contact). Finally, we mechanically staked optimized perovskite devices on top of high performing PERL and IBC silicon architectures. The imputed output efficiency of the 4-terminal measured perovskite-silicon solar cell was 26.7% and 25.2% for PERL-perovskite and IBC-perovskite, respectively.

  8. Composite Transparent Electrode of Graphene Nanowalls and Silver Nanowires on Micropyramidal Si for High-Efficiency Schottky Junction Solar Cells.

    Science.gov (United States)

    Jiao, Tianpeng; Liu, Jian; Wei, Dapeng; Feng, Yanhui; Song, Xuefen; Shi, Haofei; Jia, Shuming; Sun, Wentao; Du, Chunlei

    2015-09-16

    The conventional graphene-silicon Schottky junction solar cell inevitably involves the graphene growth and transfer process, which results in complicated technology, loss of quality of the graphene, extra cost, and environmental unfriendliness. Moreover, the conventional transfer method is not well suited to conformationally coat graphene on a three-dimensional (3D) silicon surface. Thus, worse interfacial conditions are inevitable. In this work, we directly grow graphene nanowalls (GNWs) onto the micropyramidal silicon (MP) by the plasma-enhanced chemical vapor deposition method. By controlling growth time, the cell exhibits optimal pristine photovoltaic performance of 3.8%. Furthermore, we improve the conductivity of the GNW electrode by introducing the silver nanowire (AgNW) network, which could achieve lower sheet resistance. An efficiency of 6.6% has been obtained for the AgNWs-GNWs-MP solar cell without any chemical doping. Meanwhile, the cell exhibits excellent stability exposed to air. Our studies show a promising way to develop simple-technology, low-cost, high-efficiency, and stable Schottky junction solar cells.

  9. Breakdown voltage mapping through voltage dependent ReBEL intensity imaging of multi-crystalline Si solar cells

    Science.gov (United States)

    Dix-Peek, RM.; van Dyk, EE.; Vorster, FJ.; Pretorius, CJ.

    2018-04-01

    Device material quality affects both the efficiency and the longevity of photovoltaic (PV) cells. Therefore, identifying these defects can be beneficial in the development of more efficient and longer lasting PV cells. In this study, a combination of spatially-resolved, electroluminescence (EL), and light beam induced current (LBIC) measurements, were used to identify specific defects and features of a multi-crystalline Si PV cells. In this study, a novel approach is used to map the breakdown voltage of a PV cell through voltage dependent Reverse Bias EL (ReBEL) intensity imaging.

  10. Fabrication of highly transparent diamond-like carbon anti-reflecting coating for Si solar cell application

    Energy Technology Data Exchange (ETDEWEB)

    Banerjee, Amit, E-mail: erdd@iacs.res.in; Das, Debajyoti, E-mail: erdd@iacs.res.in [Nano-Science Group, Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Kolkata-700032 (India)

    2014-04-24

    ARC grade highly transparent unhydrogenated diamond-like carbon (DLC) films were produced, directly from a-C target, using RF magnetron sputtering deposition technique, for optoelectronic applications. Optical band gap, transmittance, reflectance, sp{sup 3} fraction, I{sub D}/I{sub G}, density, and refractive index of the films have been estimated with the help of optical tools like Uv-vis spectrophotometer, ellipsometer and micro-Raman. Optimum ARC-qualities have been identified in low-temperature grown DLC films at an Ar pressure of 4 mTorr in the reactor, accomplishing its key requirements for use in silicon solar cells.

  11. Effect of TCO/μc-Si:H Interface Modification on Hydrogenated Microcrystalline Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Shin-Wei Liang

    2013-01-01

    Full Text Available The effects of H2 plasma exposure on optical, electrical, and structural properties of fluorine-doped tin oxide (FTO and AZO/FTO substrates have been investigated. With increasing the time of H2-plasma exposure, the hydrogen radical and ions penetrated through the FTO surface to form more suboxides such as SnO and metallic Sn, which was confirmed by the XPS analysis. The Sn reduction on the FTO surface can be effectively eliminated by capping the FTO with a very thin layer of sputtered aluminum-doped zinc oxide (AZO, as confirmed by the XPS analysis. By using the AZO/FTO as front TCO with the subsequent annealing, the p-i-n μc-Si:H cell exhibited a significantly enhanced JSC from 15.97 to 19.40 mA/cm2 and an increased conversion efficiency from 5.69% to 7.09%. This significant enhancement was ascribed to the effective elimination of the Sn reduction on the FTO surface by the thin AZO layer during the Si-based thin-film deposition with hydrogen-rich plasma exposure. Moreover, the subsequent annealing of the sputtered AZO could lead to less defects as well as a better interface of AZO/FTO.

  12. Changes of the temperature coefficients of the characteristics which accompany degradation and recovery of a-Si solar cells; A-Si taiyo denchi no hikari (denryu) rekka oyobi kaifuku ni tomonau tokusei ondo keisu no henka

    Energy Technology Data Exchange (ETDEWEB)

    Yanagisawa, T; Koyanagi, T; Nakamura, K; Takahisa, K; Kojima, T [electrotechnical Laboratory, Tsukuba (Japan)

    1996-10-27

    Pursuant to the measuring of temperature dependency of the characteristics such as conversion efficiency, during the process of degradation in a-Si solar cells due to light and electric current and the process of recovery by annealing, this paper describes changes in temperature coefficients, correlation between the characteristic parameters and the degradation, and the results of the examination of their characteristics. The conversion efficiency {mu} degraded approximately by 45% of the initial value each by the irradiation under a light intensity with 3 SUN accelerated and by the infusion of current at 20mA/cm{sup 2}; and then, the efficiency recovered to 70-75% of the degradation by subsequent annealing. In addition, in the temperature dependency at 80{degree}C against at 20{degree}C, Isc slightly increased while Vcc greatly decreased. This slight increase in Isc was mainly due to the decrease in the width of the forbidden band, while the decrease in Vcc was due to the increase in the reverse saturation current. The temperature dependency of {mu}N was negative, becoming small in accordance with the degradation. The temperature dependency of FF/FFO was negative initially both in light and current, but it decreased with the degradation and turned to positive. The temperature coefficients of I-V parameters reversibly changed corresponding to the degradation and recovery of these parameters and stayed in a good correlation. 7 refs., 8 figs., 1 tab.

  13. Investigation of charges carrier density in phosphorus and boron doped SiNx:H layers for crystalline silicon solar cells

    International Nuclear Information System (INIS)

    Paviet-Salomon, B.; Gall, S.; Slaoui, A.

    2013-01-01

    Highlights: ► We investigate the properties of phosphorus and boron-doped silicon nitride films. ► Phosphorus-doped layers yield higher lifetimes than undoped ones. ► The fixed charges density decreases when increasing the films phosphorus content. ► Boron-doped films feature very low lifetimes. ► These doped layers are of particular interest for crystalline silicon solar cells. -- Abstract: Dielectric layers are of major importance in crystalline silicon solar cells processing, especially as anti-reflection coatings and for surface passivation purposes. In this paper we investigate the fixed charge densities (Q fix ) and the effective lifetimes (τ eff ) of phosphorus (P) and boron (B) doped silicon nitride layers deposited by plasma-enhanced chemical vapour deposition. P-doped layers exhibit a higher τ eff than standard undoped layers. In contrast, B-doped layers exhibit lower τ eff . A strong Q fix decrease is to be seen when increasing the P content within the film. Based on numerical simulations we also demonstrate that the passivation obtained with P- and B-doped layers are limited by the interface states rather than by the fixed charges

  14. Improvement in current density of nano- and micro-structured Si solar cells by cost-effective elastomeric stamp process

    Science.gov (United States)

    Jeon, Kiseok; Jee, Hongsub; Lim, Sangwoo; Park, Min Joon; Jeong, Chaehwan

    2018-03-01

    Effective incident light should be controlled for improving the current density of solar cells by employing nano- and micro-structures on silicon surface. The elastomeric stamp process, which is more cost effective and simpler than conventional photolithography, was proposed for the fabrication of nano- and micro-structures. Polydimethylsiloxane (PDMS) was poured on a mother pattern with a diameter of 6 μm and a spacing of 2 μm; then, curing was performed to create a PDMS mold. The regular micropattern was stamped on a low-viscosity resin-coated silicon surface, followed by the simple reactive ion etching process. Nano-structures were formed using the Ag-based electroless etching process. As etching time was increased to 6 min, reflectance decreased to 4.53% and current density improved from 22.35 to 34.72 mA/cm2.

  15. Hole-Collection Mechanism in Passivating Metal-Oxide Contacts on Si Solar Cells: Insights From Numerical Simulations

    KAUST Repository

    Vijayan, Ramachandran Ammapet

    2018-02-14

    Silicon heterojunction solar cells enable high conversion efficiencies, thanks to their passivating contacts which consist of layered stacks of intrinsic and doped amorphous silicon. However, such contacts may reduce the photo current, when present on the illuminated side of the cell. This motivates the search for wider bandgap contacting materials, such as metal oxides. In this paper, we elucidate the precise impact of the material parameters of MoO$_{x}$ on device characteristics, based on numerical simulations. The simulation results allow us to propose design principles for hole-collecting induced junctions. We find that if MoO$_{x}$ has a sufficiently high electron affinity ($\\\\ge\\\\! \\\\text{{5.7 eV}}$), direct band-to-band tunneling is the dominant transport mechanism; whereas if it has a lower electron affinity ($ <\\\\! \\\\text{{5.7 eV}}$), trap-assisted tunneling dominates, which might introduce additional series resistance. At even lower electron affinity, S-shaped J–V curves may appear for these solar cells, which are found to be due to an insufficient trap state density in the MoO$_{x}$ film in contrast to the expectation of better performance at low trap density. These traps may assist carrier transport when present near the conduction band edge of the MoO$_{x}$ film. Our simulations predict that performance optimization for the MoO$_{x}$ film has to target either 1) a high electron affinity and a moderate doping density film or, 2) if the electron affinity is lower than the optimum value, a high defect density not exceeding the doping density inside the film.

  16. Improved performance of dye-sensitized solar cells: An TiO{sub 2}-nano-SiO{sub 2} hybrid photoanode with post-treatment of TiCl{sub 4} aqueous solution

    Energy Technology Data Exchange (ETDEWEB)

    Liu Ling; Niu Haihong; Zhang Shouwei; Wan Lei [School of Electrical Engineering and Automation, Hefei University of Technology (HFUT), School of Chemical Engineering, HFUT, Hefei 230009 (China); Miao Shiding, E-mail: miaosd@iccas.ac.cn [School of Electrical Engineering and Automation, Hefei University of Technology (HFUT), School of Chemical Engineering, HFUT, Hefei 230009 (China); Xu Jinzhang, E-mail: xujz@hfut.edu.cn [School of Electrical Engineering and Automation, Hefei University of Technology (HFUT), School of Chemical Engineering, HFUT, Hefei 230009 (China)

    2012-11-15

    Highlights: Black-Right-Pointing-Pointer A TiO{sub 2}-nano-SiO{sub 2} hybrid film was prepared by depositing a paste of TiO{sub 2} (P{sub 25}) incorporated with SiO{sub 2}. Black-Right-Pointing-Pointer The optimal concentration of TiCl{sub 4} solution was found to be 75 mM for the post-treatment. Black-Right-Pointing-Pointer A photoelectron conversion efficiency of 6.39% was achieved for the prepared dye-sensitized solar cells (DSSCs). Black-Right-Pointing-Pointer SiO{sub 2} gives a significant improvement in the performance of the DSSCs. - Abstract: A TiO{sub 2}-nano-SiO{sub 2} hybrid film was prepared on a conductive F-doped tin oxide (FTO) substrate by depositing a mixture paste of TiO{sub 2} (P{sub 25}) and nano-sized SiO{sub 2} particles. The hybrid film was further treated by a titanium tetrachloride (TiCl{sub 4}) aqueous solution with different concentrations before it was assembled as a photoanode in dye sensitized solar cells (DSSCs). We studied the performance of DSSCs by using the dye molecule of cis-bis(isothiocy-anato)-bis-(2,2 Prime -bipyridyl-4,4 Prime -dicarboxylato) -ruthenium(II) bis-tetrabutylammonium (N719) as sensitizer. Results suggested that the post-treatment using TiCl{sub 4} could enhance the dye adsorption. The thin TiO{sub 2} layer hydrolyzed from TiCl{sub 4} could fill gaps between nanoparticles in the composite film, leading to a better electron transport than non-treated films, and improve the light harvesting efficiency. The optimal concentration was found to be 75 mM for the post-treatment of TiO{sub 2}-SiO{sub 2} hybrid film by TiCl{sub 4} solution. A photoelectron conversion efficiency of 6.39% was achieved in the back-side illuminated dye-sensitized solar cells, which is {approx}105% higher than the basic efficiency of the bare TiO{sub 2} sensitized sample. TiO{sub 2}-nano-SiO{sub 2} hybrid photoanode was prepared by incorporation of nano-sized SiO{sub 2} in the TiO{sub 2} film. The introduced SiO{sub 2} as a wide band

  17. Analysis and evaluation for practical application of photovoltaic power generation system. Analysis and evaluation for development of extra-high efficiency solar cells (fundamental research on extra-high efficiency Si solar cells); Taiyoko hatsuden system jitsuyoka no tame no kaiseki hyoka. Chokokoritsu taiyo denchi no gijutsu kaihatsu no tame no kaiseki hyoka (chokokoritsu silicon taiyo denchi gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Sekikawa, T; Suzuki, E; Ishikawa, K; Takato, H; Yui, N; Shimokawa, R [Electrotechnical Laboratory, Tsukuba (Japan)

    1994-12-01

    Described herein are the results of the FY1994 research program for analysis and evaluation for development of extra-high efficiency silicon solar cells. It is necessary for development of extra-high efficiency Si solar cells to extend as far as possible service life of minority carriers and to develop the evaluation techniques. Noting photoluminescence (PL) observable even with Si, the method of evaluating characteristics of minority carriers, which are not limited in samples, is developed to experimentally determine their service life from transitional response of the PL characteristics. Si has an extremely low quantum effect, because it is an indirect transitional semiconductor, and needs measurement of very high sensitivity. A rapid heat annealing apparatus and others to generate carriers in the infrared and ultraviolet regions are provided in consideration that these are possible means to increase efficiency. These possibilities will be pursued by developing the annealing techniques. 1 fig.

  18. Effects of Sheet Resistance on mc-Si Selective Emitter Solar Cells Using Laser Opening and One-Step Diffusion

    Directory of Open Access Journals (Sweden)

    Sheng-Shih Wang

    2015-01-01

    Full Text Available In order to simplify process procedure and improve conversion efficiency (η, we present new steps of laser opening and one-step POCl3 diffusion to fabricate selective emitter (SE solar cells, in which heavily doped regions (HDR and lightly doped regions (LDR were formed simultaneously. For HDR, we divided six cells into two groups for POCl3 diffusion with sheet resistance (RS of 40 Ω/sq (for group A and 50 Ω/sq (for group B. The dry oxidation duration at a temperature of 850°C was 18, 25, and 35 min for the 3 different cells in each group. This created six SE samples with different RS pairings for the HDR and LDR. The optimal cell (sample SE2 with RS values of 40/81 Ω/Sq in HDR/LDR showed the best η of 16.20%, open circuit voltage (VOC of 612.52 mV, and fill factor (FF of 75.83%. The improvement ratios are 1.57% for η and 14.32% for external quantum efficiency (EQE as compared with those of the two-step diffusion process of our previous study. Moreover, the one-step laser opening process and omitting the step of removing the damage caused by laser ablation especially reduce chemistry pollution, thus showing ecofriendly process for use in industrial-scale production.

  19. Study the physical and optoelectronic properties of silver gallium indium selenide AgGaInSe2/Si heterojunction solar cell

    Science.gov (United States)

    Hassun, Hanan K.

    2018-05-01

    AgGa1-x InxSe2 (AGIS) thin films was deposited on Si and glass substrates by thermal evaporation at RT and different ratios of Indium (x=0.2, 0.5, 0.8). The synthetics properties of AGIS thin film have been examined using X-ray diffraction and AFM. AGIS thin films possessed a polycrystalline tetragonal structure. Average diameter and roughness calculated from AFM images shows an increase in its value with increasing the ratios of Indium. Hall measurements showed n-type conduction with high mobility. The AgGa0.2In0.8Se2 thin film solar cell with a band gap of 1.65eV exhibit a total efficiency of 6.3% with open-circuit voltage Voc 0.38V, short circuit current Jsc 29 mA/cm2, fill factor FF 0.571 and total area 1 cm2. The built-in potential Vbi, concentration of majoritarian carrier ND and depletion width w are definite under different ratios of Indium from C-V amount.

  20. The role of bulk and interface states on performance of a-Si: H p-i-n solar cells using reverse current-voltage technique

    International Nuclear Information System (INIS)

    Mahmood, S A; Kabir, M Z; Murthy, R V R; Dutta, V

    2009-01-01

    The defect state densities in the bulk of the i-layer and at the p/i interface have been studied in hydrogenated amorphous silicon (a-Si : H) solar cells using reverse current-voltage (J-V) measurements. In this work the cells have been soaked with blue and red lights prior to measurements. The voltage-dependent reverse current has been analysed on the basis of thermal generation of the carriers from midgap states in the i-layer and the carrier injection through the p/i interface. Based on the reverse current behaviour, it has been analysed that at lower reverse bias (reverse voltage, V r r ∼ 25 V) the defect states at the p/i interface are contributing to the reverse currents. The applied reverse bias annealing (RBA) treatment on these cells shows more significant annihilation of defect states at the p/i interface as compared with the bulk of the i-layer. An analytical model is developed to explain the observed behaviour. There is good agreement between the theory and the experimental observations. The fitted defect state densities are 9.1 x 10 15 cm -3 and 8 x 10 18 cm -3 in the bulk of the i-layer and near the p/i interface, respectively. These values decrease to 2.5 x 10 15 cm -3 and 6 x 10 17 cm -3 , respectively, in the samples annealed under reverse bias at 2 V.

  1. Efficiency enhancement of ZnO nanostructure assisted Si solar cell based on fill factor enlargement and UV-blue spectral down-shifting

    International Nuclear Information System (INIS)

    Gholizadeh, A; Reyhani, A; Mortazavi, S Z; Parvin, P

    2017-01-01

    ZnO nanostructures (including nano-plates and nano-rods (NRs)) are grown in various temperatures and Ar/O 2 flow rates using thermal chemical vapor deposition, which affect the structure, nano-plate/NR population, and the quality of ZnO nanostructures. X-ray diffraction (XRD) attests that the peak intensity of the crystallographic plane (1 0 0) is correlated to nano-plate abundance. Moreover, optical properties elucidate that the population of nano-plates in samples strongly affect the band gap, binding energy of the exciton, and UV–visible (UV–vis) absorption and spectral luminescence emissions. In fact, the exciton binding energy reduces from ∼100 to 80 meV when the population of nano-plates increases in samples. Photovoltaic characteristics based on the drop-casting on Si solar cells reveals three dominant factors, namely, the equivalent series resistance, decreasing reflectance, and down-shifting, in order to scale up the absolute efficiency by 3%. As a consequence, the oxygen vacancies in ZnO nanostructures give rise to the down-shifting and increase of free-carriers, leading to a reduction in the equivalent series resistance and an enlargement of fill factor. To obtain a larger I sc , reduction of spectral reflectance is essential; however, the down-shifting process is shown to be dominant by lessening the surface electron-hole recombination rate over the UV–blue spectral range. (paper)

  2. Efficiency enhancement of ZnO nanostructure assisted Si solar cell based on fill factor enlargement and UV-blue spectral down-shifting

    Science.gov (United States)

    Gholizadeh, A.; Reyhani, A.; Parvin, P.; Mortazavi, S. Z.

    2017-05-01

    ZnO nanostructures (including nano-plates and nano-rods (NRs)) are grown in various temperatures and Ar/O2 flow rates using thermal chemical vapor deposition, which affect the structure, nano-plate/NR population, and the quality of ZnO nanostructures. X-ray diffraction (XRD) attests that the peak intensity of the crystallographic plane (1 0 0) is correlated to nano-plate abundance. Moreover, optical properties elucidate that the population of nano-plates in samples strongly affect the band gap, binding energy of the exciton, and UV-visible (UV-vis) absorption and spectral luminescence emissions. In fact, the exciton binding energy reduces from ~100 to 80 meV when the population of nano-plates increases in samples. Photovoltaic characteristics based on the drop-casting on Si solar cells reveals three dominant factors, namely, the equivalent series resistance, decreasing reflectance, and down-shifting, in order to scale up the absolute efficiency by 3%. As a consequence, the oxygen vacancies in ZnO nanostructures give rise to the down-shifting and increase of free-carriers, leading to a reduction in the equivalent series resistance and an enlargement of fill factor. To obtain a larger I sc, reduction of spectral reflectance is essential; however, the down-shifting process is shown to be dominant by lessening the surface electron-hole recombination rate over the UV-blue spectral range.

  3. An in situ XPS study of growth of ITO on amorphous hydrogenated Si: Initial stages of heterojunction formation upon processing of ITO/a-Si:H based solar cell structures

    Energy Technology Data Exchange (ETDEWEB)

    Diplas, Spyros; Thoegersen, Annett; Ulyashin, Alexander [SINTEF Materials and Chemistry, Oslo (Norway); Romanyuk, Andriy [University of Basel, Basel (Switzerland)

    2015-01-01

    In this work we studied the interface growth upon deposition of indium-tin oxide (ITO) on amorphous hydrogenated Si (a-Si:H)/crystalline Si (c-Si) structures. The analysis methods used were X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) in combination with in situ film growth with magnetron sputtering. The analysis was complemented with transmission electron microscopy (TEM) of the deposited films. The sputtering equipment was attached to the XPS spectrometer and hence early stage film growth was observed without breaking the vacuum. It was shown that during early deposition stages ITO is reduced by a-Si:H. The reduction is accompanied with formation of metallic In and Sn at the interface. Formation of Sn is more enhanced on a-Si substrates whilst formation of In is more dominant on c-Si substrates. The reduction effect is less intense for amorphous hydrogenated Si as compared to crystalline Si and this is attributed to stronger presence of dangling bonds in the latter than the former. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Investigation of fundamental physical properties of CdSiP{sub 2} and its application in solar cell devices by using (ZnX; X = Se, Te) buffer layers

    Energy Technology Data Exchange (ETDEWEB)

    Verma, A.S., E-mail: ajay_phy@rediffmail.com [Department of Physics, Banasthali Vidyapith, Rajasthan 304022 (India); Gautam, Ruchita; Singh, Pravesh [Department of Physics, Banasthali Vidyapith, Rajasthan 304022 (India); Department of Electronics and Communication, Krishna Institute of Engineering and Technology, Ghaziabad, Uttar Pradesh 201206 (India); Sharma, Sheetal [Department of Physics, Swami Premanand Mahavidyalaya, Mukerian, Punjab 144211 (India); Kumari, Sarita [Department of Physics, University of Rajasthan, Jaipur 302004 (India)

    2016-03-15

    Graphical abstract: - Highlights: • FP-LAPW method has been used to compute the solid state properties of CdSiP{sub 2}. • Electronic and optical properties reported by WIEN2K with recently developed mBJ potential. • The elastic and thermal properties were evaluated by first principles calculations. • Hardness was calculated for the first time at different temperature and pressure. • Solar cell devices with ZnSe/ZnTe buffer layers by simulated work. - Abstract: The first principles calculations were performed by the linearized augmented plane wave (LAPW) method as implemented in the WIEN2K code within the density functional theory to obtain the structural, electronic and optical properties of CdSiP{sub 2} in the body centered tetragonal (BCT) phase. The six elastic constants (C{sub 11}, C{sub 12}, C{sub 13}, C{sub 33}, C{sub 44} and C{sub 66}) and mechanical parameters were presented and compared with the available experimental data. The thermodynamic calculations within the quasi-harmonic approximation is used to give an accurate description of the pressure-temperature dependence of the thermal-expansion coefficient, bulk modulus, specific heat, Debye temperature, entropy Grüneisen parameters and hardness. Further, CdSiP{sub 2} solar cell devices have been modeled; device physics and performance parameters are analyzed for zinc chalcogenide (ZnX; X = Se, Te) buffer layers. Simulation results for CdSiP{sub 2} thin layer solar cell show the maximum efficiency (25.7%) with ZnSe as the buffer layer.

  5. Low cost silicon solar array project. Task 1: Establishment of the feasibility of a process capable of low cost, high volume production of silane, SiH4

    Science.gov (United States)

    Breneman, W. C.; Mui, J. Y. P.

    1976-01-01

    The kinetics of the redistribution of dichlorosilane and trichlorosilane vapor over a tertiary amine ion exchange resin catalyst were investigated. The hydrogenation of SiCl4 to form HSiCl3 and the direct synthesis of H2SiCl2 from HCl gas and metallurgical silicon metal were also studied. The purification of SiH4 using activated carbon adsorbent was studied along with a process for storing SiH4 absorbed on carbon. The latter makes possible a higher volumetric efficiency than compressed gas storage. A mini-plant designed to produce ten pounds per day of SiH4 is described.

  6. Microscopic Mechanism of the Staebler-Wronski Effect in a-Si Films and High-Efficiency Solar Cells: Final Subcontract Report, 1 October 2001--30 September 2004

    Energy Technology Data Exchange (ETDEWEB)

    Han, D.

    2005-05-01

    In high growth rate ({ge} 50 {angstrom}/s) HW-CVD a-Si:H films, for the first time, we show gaseous molecules in nanovoids ({approx}2% volume fraction of tube-like nanoscale voids), and demonstrate that confinement on the nanometer scale generates NMR effects that have never been observed in macroscopic systems. In the same system we found the PL peak red shift. We suggest that highly strained bonds on the inner surfaces of the nanoscale voids form broad conduction-band tail states that are responsible for the PL red shift. We characterized the structural transition from a- to nc-Si as function of H-dilution, thickness and T{sub s} of both HW- and PE-CVD films using IR, Raman, PL, CPM/PDS and E{sub a} et al. We found not only the c-Si volume fraction but also the g.b. and microstructures play an important role in the properties of the i-layer and their solar cell performance. We found a narrow structural transition zone in which the bond-angle variation, {Delta}{Theta}, decreases from 10{sup o} to 8{sup o}. For nc-Si samples, we found a characteristic low energy PL peak and proved that is originated from the g.b. regions. Using micro-Raman, we found the structural non-uniformity in the mixed-phase solar cells that showed V{sub oc} enhancement after light soaking. Using micro-Raman, we also found the slight increase of crystallinity in M/{mu}c-Si/M devices after current forming.

  7. Simulation and fabrication of SiO{sub 2}/graded-index TiO{sub 2} antireflection coating for triple-junction GaAs solar cells by using the hybrid deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jheng-Jie; Ho, Wen-Jeng, E-mail: wjho@ntut.edu.tw; Lee, Yi-Yu; Chang, Chia-Ming

    2014-11-03

    GaAs-based multi-junction solar cells (MJ-SCs) provide a wide solar-energy absorption-band (300–1800 nm), but designing and fabricating a broadband antireflection coating (ARC) are challenging. Because MJ-SCs are typically in a series that connects each subcell, the total output current is limited by the subcell that generates the smallest photocurrent. Thus, the ARC for MJ-SCs must be designed not only to obtain broadband absorption but also to minimize light reflection at the wavelength band of the current-limited cell. This study proposes a broadband SiO{sub 2}/graded-index TiO{sub 2} ARC for improving the current-limited subcell performance by using a hybrid deposition (e-beam evaporation and spin-on coating). A bottom TiO{sub 2} layer and a top SiO{sub 2} layer were deposited through e-beam evaporation, but the middle TiO{sub 2} layer was deposited using spin-on coating because the refractive index values of the TiO{sub 2} films could be tuned by applying the spin speed. Therefore, the graded-index TiO{sub 2} layers were easily obtained using a hybrid deposition method. In addition, a suitable reflectance spectrum of an ARC structure for a middle-cell current-limited triple-junction (3-J) GaAs solar cell was simulated using commercial optical software. The photovoltaic current–voltage and external quantum efficiency (EQE) were measured and compared. The resulting improvements of a short-circuit current of 32.4% and conversion efficiency of 31.8% were attributed to an enhanced EQE of 32.97% as well as a low broadband reflectance exhibited on the middle cell of the 3-J GaAs solar cell with a SiO{sub 2}/graded-index TiO{sub 2} ARC. - Highlights: • A broadband SiO{sub 2}/graded-index TiO{sub 2} ARC obtained by a hybrid deposition • A suitable triple-layer ARC was simulated by a commercial optical software. • Optical reflection, photovoltaic I–V, and EQE of 3-J GaAs solar cell were characterized. • An increased J{sub sc} of 32.4% and an increased

  8. Enhancing the photovoltaic performance of CdTe/CdS solar cell via luminescent downshifting using K{sub 2}SiF{sub 6}:Mn{sup 4+} phosphors

    Energy Technology Data Exchange (ETDEWEB)

    Talewar, R. A., E-mail: talewarrupesh@gmail.com; Joshi, C. P. [Physics Department, Shri Ramdeobaba College of Engineering & Management, Katol Road, Nagpur 440013 (India); Moharil, S. V. [Department of Physics, Rashtrasant Tukadoji Maharaj Nagpur University, Nagpur 440010 (India)

    2016-05-23

    The efficiency of CdTe/CdS solar cell can be significantly improved by using luminescent down-shifting material on their front surface. Taking this into account a red emitting phosphor K{sub 2}Si{sub 1-x}F{sub 6}:xMn{sup 4+} (x=10 to 25 mol %) has been synthesized through wet chemical method. The as-synthesized materials were characterized by powder x-ray diffraction (XRD) and photoluminescence (PL) techniques. The photoluminescence studies of K{sub 2}SiF{sub 6}:Mn{sup 4+} revealed enhancement in the emission intensity, when Mn{sup 4+} concentration was increased from 10 mol % to 25 mol %. This red emitting phosphor efficiently absorbs the photons typically in the region 300-500 nm and re-emits in the region where the photovoltaic device exhibits significantly better response. The results show the possibility of enhancing the photovoltaic conversion efficiency of CdTe thin film solar cell by modifying the absorption spectra and utilising the energy in the UV-blue part of the solar spectrum.

  9. Fast and accurate methods for the performance testing of highly-efficient c-Si photovoltaic modules using a 10 ms single-pulse solar simulator and customized voltage profiles

    International Nuclear Information System (INIS)

    Virtuani, A; Rigamonti, G; Friesen, G; Chianese, D; Beljean, P

    2012-01-01

    Performance testing of highly efficient, highly capacitive c-Si modules with pulsed solar simulators requires particular care. These devices in fact usually require a steady-state solar simulator or pulse durations longer than 100–200 ms in order to avoid measurement artifacts. The aim of this work was to validate an alternative method for the testing of highly capacitive c-Si modules using a 10 ms single pulse solar simulator. Our approach attempts to reconstruct a quasi-steady-state I–V (current–voltage) curve of a highly capacitive device during one single 10 ms flash by applying customized voltage profiles–-in place of a conventional V ramp—to the terminals of the device under test. The most promising results were obtained by using V profiles which we name ‘dragon-back’ (DB) profiles. When compared to the reference I–V measurement (obtained by using a multi-flash approach with approximately 20 flashes), the DB V profile method provides excellent results with differences in the estimation of P max (as well as of I sc , V oc and FF) below ±0.5%. For the testing of highly capacitive devices the method is accurate, fast (two flashes—possibly one—required), cost-effective and has proven its validity with several technologies making it particularly interesting for in-line testing. (paper)

  10. Hierarchical structures consisting of SiO2 nanorods and p-GaN microdomes for efficiently harvesting solar energy for InGaN quantum well photovoltaic cells.

    Science.gov (United States)

    Ho, Cheng-Han; Lien, Der-Hsien; Chang, Hung-Chih; Lin, Chin-An; Kang, Chen-Fang; Hsing, Meng-Kai; Lai, Kun-Yu; He, Jr-Hau

    2012-12-07

    We experimentally and theoretically demonstrated the hierarchical structure of SiO(2) nanorod arrays/p-GaN microdomes as a light harvesting scheme for InGaN-based multiple quantum well solar cells. The combination of nano- and micro-structures leads to increased internal multiple reflection and provides an intermediate refractive index between air and GaN. Cells with the hierarchical structure exhibit improved short-circuit current densities and fill factors, rendering a 1.47 fold efficiency enhancement as compared to planar cells.

  11. Double transparent conducting layers for Si photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Yun, Ju-Hyung [Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, NY 14260 (United States); Kim, Joondong, E-mail: joonkim@incheon.ac.kr [Department of Electrical Engineering, Incheon National University, Incheon, 406772 (Korea, Republic of); Park, Yun Chang [Measurement and Analysis Division, National Nanofab Center (NNFC), Daejeon 305806 (Korea, Republic of); Moon, Sang-Jin [Energy Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon 305-600 (Korea, Republic of); Anderson, Wayne A. [Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, NY 14260 (United States)

    2013-11-29

    Double transparent conductive oxide (TCO) film-embedded Si heterojunction solar cells were fabricated. An intentional doping was not applied for heterojunction solar cells due to the spontaneous Schottky junction formation between TCO films and an n-type Si substrate. Three different TCO coatings were formed by sputtering method for an Al-doped ZnO (AZO) film, an indium-tin-oxide (ITO) film and double stacks of ITO/AZO films. An improved crystalline ITO film was grown on an AZO template upon hetero-epitaxial growth. This double TCO films-embedded Si (ITO/AZO/Si) heterojunction solar cell provided significantly enhanced efficiency of 9.23 % as compared to the single TCO/Si (ITO/Si or AZO/Si) devices due to the optical and the electrical benefits. The effective arrangement of TCO films (ITO/AZO) provides benefits of a lower front contact resistance and a smaller band offset to Si leading enhanced photovoltaic performances. This demonstrates a potential scheme for an effective TCO film-embedded heterojunction Si solar cell. - Highlights: • Double transparent conducting oxide films form a heterojunction to Si. • A quality indium-tin-oxide film was grown above an Al-doped zinc oxide template. • Heterojunction Si solar cell was made without an intentional doping process.

  12. Double transparent conducting layers for Si photovoltaics

    International Nuclear Information System (INIS)

    Yun, Ju-Hyung; Kim, Joondong; Park, Yun Chang; Moon, Sang-Jin; Anderson, Wayne A.

    2013-01-01

    Double transparent conductive oxide (TCO) film-embedded Si heterojunction solar cells were fabricated. An intentional doping was not applied for heterojunction solar cells due to the spontaneous Schottky junction formation between TCO films and an n-type Si substrate. Three different TCO coatings were formed by sputtering method for an Al-doped ZnO (AZO) film, an indium-tin-oxide (ITO) film and double stacks of ITO/AZO films. An improved crystalline ITO film was grown on an AZO template upon hetero-epitaxial growth. This double TCO films-embedded Si (ITO/AZO/Si) heterojunction solar cell provided significantly enhanced efficiency of 9.23 % as compared to the single TCO/Si (ITO/Si or AZO/Si) devices due to the optical and the electrical benefits. The effective arrangement of TCO films (ITO/AZO) provides benefits of a lower front contact resistance and a smaller band offset to Si leading enhanced photovoltaic performances. This demonstrates a potential scheme for an effective TCO film-embedded heterojunction Si solar cell. - Highlights: • Double transparent conducting oxide films form a heterojunction to Si. • A quality indium-tin-oxide film was grown above an Al-doped zinc oxide template. • Heterojunction Si solar cell was made without an intentional doping process

  13. Structural damage in thin SLIM-Cut c-Si foils fabricated for solar cell purposes: atomic assessment by electron spin resonance

    International Nuclear Information System (INIS)

    Kepa, J; Stesmans, A; Martini, R

    2015-01-01

    Within the context of reducing production costs, thin (<90 μm) silicon foils intended for photovoltaic applications have been fabricated from standard (100)Si wafers using a low-temperature (<150 °C) stress-induced lift-off process. A multi-frequency electron spin resonance (ESR) study was performed in order to evaluate, at atomic scale, the quality of the material in terms of defects, including identification and quantification. Generally, a complex ESR spectrum is observed, disentangled as the superposition of three separate signals. This includes, most prominently (∼91% of total density) the D-line (Si 3  ≡ Si· dangling bonds in a disordered Si environment), a set (∼6%) of highly anisotropic signals ascribed to dislocations (K1-like), and a triplet, identified as the Si-SL5 N-donor defect. Defect density depth profiling from the lift-off side shows all signals disappear in tandem after etching off a ∼33 μm thick Si layer, indicating a highly correlated−equal in relative terms−distribution of the three types of defects over the affected top part of the Si foil. The defect density is found to be highly non-uniform laterally, with the density peaking near the crack initiation point, from which defect generation spreads. It is thus found that the SLIM-Cut method for fabrication of thin Si foils results in the introduction of defects that would unacceptably impair the functionality of photovoltaic cells built on these substrates. Fortunately, this may be cured by etching off a thin top Si layer, resulting in a most useful thin Si foil of standard high quality. (paper)

  14. Technological development for super-high efficiency solar cells. Technological development for super-high efficiency singlecrystalline silicon solar cells (super-high efficiency singlecrystalline Si solar cells); Chokokoritsu taiyo denchi no gijutsu kaihatsu. Chokokoritsu tankessho silicon taiyo denchi no gijutsu kaihatsu (chokokoritsu tankessho silicon taiyo denchi cell no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on technological development of super-high efficiency singlecrystalline silicon solar cells in fiscal 1994. (1) On development of high-performance light receiving layer, the fine electrode for receiving surfaces was designed to reduce serial resistance, and the high-quality oxide passivation film was studied to reduce surface recombination velocity. (2) On development of forming technology of back heterojunction, the high-quality cell with B-doped fine crystalline Si film on its back was studied by heat treatment of the fine crystalline Si film, and the cell structure with high back reflectance of light was also studied. (3) On analysis for high-efficiency cells, the relation between the back recombination velocity at the interface between p-type substrate and back passivation film, and the internal collection efficiency as probe light was injected from the back, was calculated by numerical simulation. As a result, the cell back recombination velocity could be evaluated by measuring the spectral internal collection efficiency to back injection. 15 figs., 6 tabs.

  15. Proton irradiation effects of amorphous silicon solar cell for solar power satellite

    Energy Technology Data Exchange (ETDEWEB)

    Morita, Yousuke; Oshima, Takeshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Sasaki, Susumu; Kuroda, Hideo; Ushirokawa, Akio

    1997-03-01

    Flexible amorphous silicon(fa-Si) solar cell module, a thin film type, is regarded as a realistic power generator for solar power satellite. The radiation resistance of fa-Si cells was investigated by the irradiations of 3,4 and 10 MeV protons. The hydrogen gas treatment of the irradiated fa-Si cells was also studied. The fa-Si cell shows high radiation resistance for proton irradiations, compared with a crystalline silicon solar cell. (author)

  16. Research on fabrication technology for thin film solar cells for practical use. Technological development for qualitative improvement (development of fabrication technology of thin film polycrystalline Si solar cell); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Kohinshitsuka gijutsu (usumaku takessho silicon kei taiyo denchi seizo no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on the fabrication technology of thin film polycrystalline Si solar cells in fiscal 1994. (1) On the fabrication technology of high-quality Si thin films, the new equipment was studied which allows uniform stable melting recrystallization over a large area. The new equipment adopted a heating method based on RTP system, and is now under adjustment. (2) On the fabrication technology of light/carrier confinement structure, degradation of hydrogen-treated thin film Si solar cells by light irradiation was examined. As a result, since any characteristic degradation was not found even by long time light irradiation, the high quality of the cells was confirmed regardless of hydrogen-treatment. Fabrication of stable reproducible fine texture structure became possible by using fabrication technology of light confinement structure by texture treatment of cell surfaces. (3) On low-cost process technology, design by VEST process, estimation of cell characteristics by simulation, and characteristics of prototype cells were reported. 33 figs., 1 tab.

  17. Fisica solare

    CERN Document Server

    Degl’Innocenti, Egidio Landi

    2008-01-01

    Il volume è un'introduzione alla Fisica Solare che si propone lo scopo di illustrare alla persona che intende avvicinarsi a questa disciplina (studenti, dottori di ricerca, ricercatori) i meccanismi fisici che stanno alla base della complessa fenomenologia osservata sulla stella a noi più vicina. Il volume non ha la pretesa di essere esauriente (basta pensare che la fisica solare spazia su un gran numero di discipline, quali la Fisica Nucleare, la Termodinamica, L'Elettrodinamica, la Fisica Atomica e Molecolare, la Spettoscopia in tutte le bande dello spettro elettromagnetico, la Magnetoidrodinamica, la Fisica del Plasma, lo sviluppo di nuova strumentazione, l'Ottica, ecc.). Piuttosto, sono stati scelti un numero di argomenti di rilevanza fondamentale nello studio presente del Sole (soprattutto nei riguardi delle osservazioni da terra con grandi telescopi) e su tali argomenti si è cercato di dare una panoramica generale, inclusiva dell'evoluzione storica, senza scendere in soverchi dettagli. Siccome la Fis...

  18. Surface Passivation for Silicon Heterojunction Solar Cells

    NARCIS (Netherlands)

    Deligiannis, D.

    2017-01-01

    Silicon heterojunction solar cells (SHJ) are currently one of the most promising solar cell technologies in the world. The SHJ solar cell is based on a crystalline silicon (c-Si) wafer, passivated on both sides with a thin intrinsic hydrogenated amorphous silicon (a-Si:H) layer. Subsequently, p-type

  19. High-performance a -Si/c-Si heterojunction photoelectrodes for photoelectrochemical oxygen and hydrogen evolution

    KAUST Repository

    Wang, Hsin Ping

    2015-05-13

    Amorphous Si (a-Si)/crystalline Si (c-Si) heterojunction (SiHJ) can serve as highly efficient and robust photoelectrodes for solar fuel generation. Low carrier recombination in the photoelectrodes leads to high photocurrents and photovoltages. The SiHJ was designed and fabricated into both photoanode and photocathode with high oxygen and hydrogen evolution efficiency, respectively, by simply coating of a thin layer of catalytic materials. The SiHJ photoanode with sol-gel NiOx as the catalyst shows a current density of 21.48 mA/cm2 at the equilibrium water oxidation potential. The SiHJ photocathode with 2 nm sputter-coated Pt catalyst displays excellent hydrogen evolution performance with an onset potential of 0.640 V and a solar to hydrogen conversion efficiency of 13.26%, which is the highest ever reported for Si-based photocathodes. © 2015 American Chemical Society.

  20. Solar energy utilization by solar cells and superblack absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Bonnet, D; Selders, M

    1975-10-31

    A review is presented of the physical principles responsible for the characteristics of solar cells, with particular reference to Si homojunction and CdS--Cu/sub 2/S thin film devices. Electric power generation from solar cells still appears uncompetitive economically except in special circumstances, but heating from solar energy using selective absorbers with low reemission is more promising.

  1. Solar satellites

    Energy Technology Data Exchange (ETDEWEB)

    Poher, C.

    1982-01-01

    A reference system design, projected costs, and the functional concepts of a satellite solar power system (SSPS) for converting sunlight falling on solar panels of a satellite in GEO to a multi-GW beam which could be received by a rectenna on earth are outlined. Electricity transmission by microwaves has been demonstrated, and a reference design system for supplying 5 GW dc to earth was devised. The system will use either monocrystalline Si or concentrator GaAs solar cells for energy collection in GEO. Development is still needed to improve the lifespan of the cells. Currently, the cell performance degrades 50 percent in efficiency after 7-8 yr in space. Each SSPS satellite would weigh either 34,000 tons (Si) or 51,000 tons (GaAs), thereby requiring the fabrication of a heavy lift launch vehicle or a single-stage-to-orbit transport in order to minimize launch costs. Costs for the solar panels have been estimated at $500/kW using the GaAs technology, with transport costs for materials to GEO being $40/kg.

  2. Solar satellites

    Science.gov (United States)

    Poher, C.

    A reference system design, projected costs, and the functional concepts of a satellite solar power system (SSPS) for converting sunlight falling on solar panels of a satellite in GEO to a multi-GW beam which could be received by a rectenna on earth are outlined. Electricity transmission by microwaves has been demonstrated, and a reference design system for supplying 5 GW dc to earth was devised. The system will use either monocrystalline Si or concentrator GaAs solar cells for energy collection in GEO. Development is still needed to improve the lifespan of the cells. Currently, the cell performance degrades 50 percent in efficiency after 7-8 yr in space. Each SSPS satellite would weigh either 34,000 tons (Si) or 51,000 tons (GaAs), thereby requiring the fabrication of a heavy lift launch vehicle or a single-stage-to-orbit transport in order to minimize launch costs. Costs for the solar panels have been estimated at $500/kW using the GaAs technology, with transport costs for materials to GEO being $40/kg.

  3. A Robust CuCr2O4/SiO2 Composite Photothermal Material with Underwater Black Property and Extremely High Thermal Stability for Solar-Driven Water Evaporation

    KAUST Repository

    Shi, Yusuf

    2017-12-27

    The design and fabrication of efficient photothermal materials is the key issue in solar-driven water evaporation. In this work, a robust CuCr2O4/SiO2 composite membrane with outstanding solar-driven water evaporation performance (1.32 kg m−2 h−1) under one sun irradiation is rationally designed and synthesized by using quartz glass fibrous membrane as supporting matrix and stable CuCr2O4 particles as the active light absorber. Instead of coating a separate layer on top of the support, the CuCr2O4 particles are evenly distributed inside the matrix, which endows the membrane with great mechanical strength and excellent wear and abrasion resistance. The highly porous composite survives 6 atm pressure and retains its performance even after 75% of the membrane is removed by sandpaper. This work also looks into a generally overlooked aspect of wet versus dry state of photothermal material and its implications. Interestingly, the composite possesses a gray color with a high reflectance in dry state but turns into deep black with a low reflectance in wet state due to the decreased subsurface scattering and strong NIR light absorbance of water in wet state. This composite material also possesses excellent thermal stability and thermal shock resistance, making it able to be easily recovered by calcination in air or direct burning in fire for contaminants removal. The results demonstrate that this composite is a competitive photothermal material for practical solar distillation and indicate that the optical properties of material in wet state are more relevant to photothermal material screening and optimization for solar distillation.

  4. A heuristic model of the wire array z-pinch

    International Nuclear Information System (INIS)

    Haines, M.G.

    1998-01-01

    Recent experimental results at the Sandia National Laboratory have shown that the X-ray power increases as the number of wires n employed is increased, with a sharper increase in power when the wire gap is below a critical value. This paper proposes a model that can not only explain these phenomena, but also shows how the initial perturbations that lead to the Rayleigh-Taylor instability scale as n -1/2 . The model predicts the shell thickness at merger of the expanding separate wires which will mainly determine the final pinch radius. The largest amplitude Rayleigh-Taylor mode at the pinch time is also found, in reasonable agreement with experiment

  5. Three-Terminal Amorphous Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Cheng-Hung Tai

    2011-01-01

    Full Text Available Many defects exist within amorphous silicon since it is not crystalline. This provides recombination centers, thus reducing the efficiency of a typical a-Si solar cell. A new structure is presented in this paper: a three-terminal a-Si solar cell. The new back-to-back p-i-n/n-i-p structure increased the average electric field in a solar cell. A typical a-Si p-i-n solar cell was also simulated for comparison using the same thickness and material parameters. The 0.28 μm-thick three-terminal a-Si solar cell achieved an efficiency of 11.4%, while the efficiency of a typical a-Si p-i-n solar cell was 9.0%. Furthermore, an efficiency of 11.7% was achieved by thickness optimization of the three-terminal solar cell.

  6. Improving the back surface field on an amorphous silicon carbide (a-SiC:H) thin film photocathode for solar water splitting

    NARCIS (Netherlands)

    Perez Rodriguez, P.; Cardenas-Morcoso, Drialys; Digdaya, I.A.; Mangel Raventos, A.; Procel Moya, P.A.; Isabella, O.; Gimenez, Sixto; Zeman, M.; Smith, W.A.; Smets, A.H.M.

    2018-01-01

    Amorphous silicon carbide (a-SiC:H) is a promising material for photoelectrochemical water splitting owing to its relatively small band-gap energy and high chemical and optoelectrical stability. This work studies the interplay between charge-carrier separation and collection, and their injection

  7. Importance of the transport isotropy in ćc:Si:H thin films for solar cells deposited at low substrate temperature

    Czech Academy of Sciences Publication Activity Database

    Švrček, Vladimír; Fejfar, Antonín; Fojtík, Petr; Mates, Tomáš; Poruba, Aleš; Stuchlíková, Hana; Pelant, Ivan; Kočka, Jan; Nasuno, Y.; Kondo, M.; Matsuda, A.

    299-302, - (2002), s. 395-399 ISSN 0022-3093 Institutional research plan: CEZ:AV0Z1010914 Keywords : ćcSi:H thin films * optoelectronic properties Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.435, year: 2002

  8. Impact of the homogeneous junction breakdown in IBC solar cells on the passivation quality of Al 2 O 3 and SiO 2 : degradation and regeneration behavior

    KAUST Repository

    Mü ller, Ralph; Reichel, Christian; Yang, Xinbo; Richter, Armin; Benick, Jan; Hermle, Martin

    2017-01-01

    on the degradation but also on the regeneration behavior of the cells. It was found that cells with AlO passivation on the back side degrade during reverse breakdown whereas sister cells with SiO passivation were rather unaffected. Consequently, the degradation seems

  9. Reflectance improvement by thermal annealing of sputtered Ag/ZnO back reflectors in a-Si:H thin film silicon solar cells

    DEFF Research Database (Denmark)

    Haug, Franz-Josef; Söderström, Karin; Pahud, Céline

    2011-01-01

    Silver can be used as the back contact and reflector in thin film silicon solar cells. When deposited on textured substrates, silver films often exhibit reduced reflectance due to absorption losses by the excitation of surface plasmon resonances. We show that thermal annealing of the silver back...

  10. Charge transport in quantum dot organic solar cells with Si quantum dots sandwiched between poly(3-hexylthiophene) (P3HT) absorber and bathocuproine (BCP) transport layers

    Science.gov (United States)

    Verma, Upendra Kumar; Kumar, Brijesh

    2017-10-01

    We have modeled a multilayer quantum dot organic solar cell that explores the current-voltage characteristic of the solar cell whose characteristics can be tuned by varying the fabrication parameters of the quantum dots (QDs). The modeled device consists of a hole transport layer (HTL) which doubles up as photon absorbing layer, several quantum dot layers, and an electron transport layer (ETL). The conduction of charge carriers in HTL and ETL has been modeled by the drift-diffusion transport mechanism. The conduction and recombination in the quantum dot layers are described by a system of coupled rate equations incorporating tunneling and bimolecular recombination. Analysis of QD-solar cells shows improved device performance compared to the similar bilayer and trilayer device structures without QDs. Keeping other design parameters constant, solar cell characteristics can be controlled by the quantum dot layers. Bimolecular recombination coefficient of quantum dots is a prime factor which controls the open circuit voltage (VOC) without any significant reduction in short circuit current (JSC).

  11. Solar selective absorber functionality of carbon nanoparticles embedded in SiO2, NiO and ZnO matrices

    CSIR Research Space (South Africa)

    Katumba, G

    2008-01-01

    Full Text Available It is possible to design an optical material, through control of the substrate and coatings, to absorb a large fraction of the solar spectrum and to emit very little radiation energy in the near and far infra-red wavelength range. This requires a...

  12. Nanostructuring of Solar Cell Surfaces

    DEFF Research Database (Denmark)

    Davidsen, Rasmus Schmidt; Schmidt, Michael Stenbæk

    Solar energy is by far the most abundant renewable energy source available, but the levelized cost of solar energy is still not competitive with that of fossil fuels. Therefore there is a need to improve the power conversion effciency of solar cells without adding to the production cost. The main...... objective of this PhD thesis is to develop nanostructured silicon (Si) solar cells with higher power conversion efficiency using only scalable and cost-efficient production methods. The nanostructures, known as 'black silicon', are fabricated by single-step, maskless reactive ion etching and used as front...... texturing of different Si solar cells. Theoretically the nanostructure topology may be described as a graded refractive index in a mean-field approximation between air and Si. The optical properties of the developed black Si were simulated and experimentally measured. Total AM1.5G-weighted average...

  13. Half-Heusler compounds with a 1 eV (1.7 eV) direct band gap, lattice-matched to GaAs (Si), for solar cell application: A first-principles study

    KAUST Repository

    Belmiloud, N.

    2016-01-10

    A systematic theoretical study of the structural and electronic properties of new half-Heusler compounds is performed to find the appropriate target key physical parameters for photovoltaic application. As a result, five ternary half-Heusler compounds ScAgC, YCuC, CaZnC, NaAgO, and LiCuS are studied by density functional theory for potential applications in multi-junction solar cells. The calculated formation enthalpies indicate that these materials are thermodynamically stable. Using state-of-the-art modified Becke-Johnson exchange potential approximation, we find a direct band gap close to 1eV (∼1.88eV) for ScAgC, YCuC, CaZnC, NaAgO (LiCuS) being quasi-lattice matched to GaAs (Si). In addition, the band offsets between half-Heusler compounds and GaAs (Si) and their consequences for heterostructures are derived using the modified Tersoff method for the branch-point energy. Furthermore, the elastic constants and phonon dispersion curves are calculated. They indicate the respective mechanical and dynamical stability of these half-Heusler compounds. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Si quantum dot structures and their applications

    Science.gov (United States)

    Shcherbyna, L.; Torchynska, T.

    2013-06-01

    This paper presents briefly the history of emission study in Si quantum dots (QDs) in the last two decades. Stable light emission of Si QDs and NCs was observed in the spectral ranges: blue, green, orange, red and infrared. These PL bands were attributed to the exciton recombination in Si QDs, to the carrier recombination through defects inside of Si NCs or via oxide related defects at the Si/SiOx interface. The analysis of recombination transitions and the different ways of the emission stimulation in Si QD structures, related to the element variation for the passivation of surface dangling bonds, as well as the plasmon induced emission and rare earth impurity activation, have been presented. The different applications of Si QD structures in quantum electronics, such as: Si QD light emitting diodes, Si QD single union and tandem solar cells, Si QD memory structures, Si QD based one electron devices and double QD structures for spintronics, have been discussed as well. Note the significant worldwide interest directed toward the silicon-based light emission for integrated optoelectronics is related to the complementary metal-oxide semiconductor compatibility and the possibility to be monolithically integrated with very large scale integrated (VLSI) circuits. The different features of poly-, micro- and nanocrystalline silicon for solar cells, that is a mixture of both amorphous and crystalline phases, such as the silicon NCs or QDs embedded in a α-Si:H matrix, as well as the thin film 2-cell or 3-cell tandem solar cells based on Si QD structures have been discussed as well. Silicon NC based structures for non-volatile memory purposes, the recent studies of Si QD base single electron devices and the single electron occupation of QDs as an important component to the measurement and manipulation of spins in quantum information processing have been analyzed as well.

  15. High-efficiency Thin-film Fe2SiS4 and Fe2GeS4-based Solar Cells Prepared from Low-Cost Solution Precursors. Final Report

    Energy Technology Data Exchange (ETDEWEB)

    Radu, Daniela Rodica [Delaware State Univ., Dover, DE (United States); Univ. of Delaware, Newark, DE (United States); Liu, Mimi [Delaware State Univ., Dover, DE (United States); Hwang, Po-yu [Delaware State Univ., Dover, DE (United States); Berg, Dominik [Rowan Univ., Glassboro, NJ (United States); Dobson, Kevin [Univ. of Delaware, Newark, DE (United States). Inst. of Energy Conversion (IEC)

    2017-12-28

    The project aimed to provide solar energy education to students from underrepresented groups and to develop a novel, nano-scale approach, in utilizing Fe2SiS4 and Fe2GeS4 materials as precursors to the absorber layer in photovoltaic thin-film devices. The objectives of the project were as follows: 1. Develop and implement one solar-related course at Delaware State University and train two graduate students in solar research. 2. Fabricate and characterize high-efficiency (larger than 7%) Fe2SiS4 and Fe2GeS4-based solar devices. The project has been successful in both the educational components, implementing the solar course at DSU as well as in developing multiple routes to prepare the Fe2GeS4 with high purity and in large quantities. The project did not meet the efficiency objective, however, a functional solar device was demonstrated.

  16. Back-contacted BaSi

    NARCIS (Netherlands)

    Vismara, R.; Isabella, O.; Zeman, M.

    2017-01-01

    We present the optical investigation of a novel back-contacted architecture for solar cells based on a thin barium (di)silicide (BaSi2) absorber. First, through the analysis of absorption limits of different semiconducting materials, we show the potential of BaSi2 for

  17. SI Notes.

    Science.gov (United States)

    Nelson, Robert A.

    1983-01-01

    Discusses legislation related to SI (International Systems of Units) in the United States. Indicates that although SI metric units have been officially recognized by law in the United States, U.S. Customary Units have never received a statutory basis. (JN)

  18. Change of the equivalent circuit constants accompanied by the degradation and recovery of efficiency on a-Si solar cells; A-Si taiyo denchi no koritsu no rekka to kaifuku ni tomonau toka kairo teisu no henka

    Energy Technology Data Exchange (ETDEWEB)

    Takahisa, K; Kojima, T; Nakamura, K; Koyanagi, T; Yanagisawa, T [Electrotechnical Laboratory, Tsukuba (Japan)

    1997-11-25

    Investigations were given on how the equivalent circuit constants change when efficiency of amorphous silicon solar cells changes with time in light degradation and temperature recovery. In the experiment, light irradiation tests under a constant temperature and light intensity condition, followed by recovery tests under a constant temperature and constant weak light intensity or constant temperature condition were repeated continuously. According to the result of an experiment on single layer type cells, the change in each equivalent circuit constant in association with degradation in efficiency and file factor and variation in recovery is reversible mostly. However, a slightly irreversible component was recognized only in the initial degradation process in series resistance and diode factor values. With regard to stacked cells, it was suggested that the main players to determine cell characteristics during the processes of deterioration and recovery take turns among the three layers as follows: the shape of the time-based change in the efficiency comes different and is not saturating; as the efficiency decreases, the extent of the change increases in the diode factor and series resistance; and the path the deterioration takes differs from that the recovery takes. 2 refs., 12 figs.

  19. Solar club

    CERN Multimedia

    Solar club

    2013-01-01

    SOLAR CLUB Le  CERN-Solar-Club souhaite une  très bonne année 2013 à tous les Cernois et Cernoises, et remercie encore une fois  tous ceux et celles qui, fin octobre, par leur vote, nous ont permis de finir dans les 5 premiers du concours "Conforama Solidaire" et ainsi financer nôtre projet "énergie solaire et eau potable pour Kilela Balanda" en République Démocratique du Congo (voir : http://www.confo.ch/solidarite/?lang=fr). Nous vous annoncons également notre Assemblée Générale Annuelle jeudi 21 février à 18 h 00 Salle C, 1er étage, Bât. 61 Vous êtes les bienvenus si vous souhaitez en savoir un peu plus sur les énergies renouvelables.

  20. Increasing the efficiency of silicon heterojunction solar cells and modules by light soaking

    KAUST Repository

    Kobayashi, Eiji; De Wolf, Stefaan; Levrat, Jacques; Descoeudres, Antoine; Despeisse, Matthieu; Haug, Franz-Josef; Ballif, Christophe

    2017-01-01

    Silicon heterojunction solar cells use crystalline silicon (c-Si) wafers as optical absorbers and employ bilayers of doped/intrinsic hydrogenated amorphous silicon (a-Si:H) to form passivating contacts. Recently, we demonstrated that such solar

  1. SI: The Stellar Imager

    Science.gov (United States)

    Carpenter, Kenneth G.; Schrijver, Carolus J.; Karovska, Margarita

    2006-01-01

    The ultra-sharp images of the Stellar Imager (SI) will revolutionize our view of many dynamic astrophysical processes: The 0.1 milliarcsec resolution of this deep-space telescope will transform point sources into extended sources, and simple snapshots into spellbinding evolving views. SI s science focuses on the role of magnetism in the Universe, particularly on magnetic activity on the surfaces of stars like the Sun. SI s prime goal is to enable long-term forecasting of solar activity and the space weather that it drives in support of the Living With a Star program in the Exploration Era by imaging a sample of magnetically active stars with enough resolution to map their evolving dynamo patterns and their internal flows. By exploring the Universe at ultra-high resolution, SI will also revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magnetohydrodynamically controlled structures and processes in the Universe.

  2. Interfacial barrier height modification of indium tin oxide/a-Si:H(p) via control of density of interstitial oxygen for silicon heterojunction solar cell application

    Energy Technology Data Exchange (ETDEWEB)

    Ahn, Shihyun; Kim, Sunbo; Dao, Vinh Ai; Lee, Seungho; Iftiquar, S.M. [College of Information and Communication Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon, Gyeonggi-do 400-746 (Korea, Republic of); Kim, Doyoung [School of Electricity and Electronics, Ulsan College, Ulsan, 680-749 (Korea, Republic of); Hussain, Shahzada Qamar [Department of Energy Science, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon, Gyeonggi-do 400-746 (Korea, Republic of); Park, Hyeongsik; Lee, Jaehyeong [College of Information and Communication Engineering, Sungkyunkwan