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Sample records for si volt experiment

  1. Electron volt neutron spectrometers

    International Nuclear Information System (INIS)

    Pietropaolo, A.; Senesi, R.

    2011-01-01

    The advent of pulsed neutron sources has made available intense fluxes of epithermal neutrons (500 meV ≤E≤100 eV ). The possibility to open new investigations on condensed matter with eV neutron scattering techniques, is related to the development of methods, concepts and devices that drive, or are inspired by, emerging studies at this energy scale. Electron volt spectrometers have undergone continuous improvements since the construction of the first prototype instruments, but in the last decade major breakthroughs have been accomplished in terms of resolution and counting statistics, leading, for example, to the direct measurement of the proton 3-D Born–Oppenheimer potential in any material, or to quantitatively probe nuclear quantum effects in hydrogen bonded systems. This paper reports on the most effective methods and concepts for energy analysis and detection, as well as devices for the optimization of electron volt spectrometers for different applications. This is set in the context of the progress made up to date in instrument development. Starting from early stages of development of the technique, particular emphasis will be given to the Vesuvio eV spectrometer at the ISIS neutron source, the first spectrometer where extensive scientific, as well as research and development programmes have been carried out. The potential offered by this type of instrumentation, from single particle excitations to momentum distribution studies, is then put in perspective into the emerging fields of eV spectroscopy applied to cultural heritages and neutron irradiation effects in electronics. - Highlights: ► Neutron spectrometers at eV energies. ► Methods and techniques for eV neutrons counting at spallation sources. ► Scattering, imaging and radiation hardness tests with multi-eV neutrons.

  2. Dual voltage power supply with 48 volt

    Energy Technology Data Exchange (ETDEWEB)

    Froeschl, Joachim; Proebstle, Hartmut; Sirch, Ottmar [BMW Group, Muenchen (Germany)

    2012-11-01

    Automotive electrics/electronics have just reached a period of tremendous change. High voltage systems for Hybrid, Plug-In Hybrid or Battery Electric Vehicles with high power electric motors, high energy accumulators and electric climate compressors will be introduced in order to achieve the challenging targets for CO{sub 2} emissions and energy efficiency and to anticipate the mobility of the future. Additionally, innovations and the continuous increase of functionality for comfort, safety, driver assistance and infotainment systems require more and more electrical power of the vehicle power supply at all. On the one hand side electrified vehicles will certainly achieve a significant market share, on the other hand side they will increase the pressure to conventional vehicles with combustion engines for fuel consumption and CO{sub 2} emissions. These vehicles will be enabled to keep their competitiveness by new functions and the optimization of their electric systems. A dual voltage power supply with 48 Volt and 12 Volt will be one of the key technologies to realize these requirements. The power capability of the existing 12 Volt power supply has reached its limits. Further potentials can only be admitted by the introduction of 48 Volt. For this reason the car manufacturers Audi, BMW, Daimler, Porsche and Volkswagen started very early on this item and developed a common specification of the new voltage range. Now, it is necessary to identify the probable systems at this voltage range and to start the developments. (orig.)

  3. Design of a creep experiment for SiC/SiC composites in HFIR

    Energy Technology Data Exchange (ETDEWEB)

    Hecht, S.L.; Hamilton, M.L.; Jones, R.H. [and others

    1997-08-01

    A new specimen was designed for performing in-reactor creep tests on composite materials, specifically on SiC/SiC composites. The design was tailored for irradiation at 800{degrees}C in a HFIR RB position. The specimen comprises a composite cylinder loaded by a pressurized internal bladder that is made of Nb1Zr. The experiment was designed for approximately a one year irradiation.

  4. Design of a creep experiment for SiC/SiC composites in HFIR

    International Nuclear Information System (INIS)

    Hecht, S.L.; Hamilton, M.L.; Jones, R.H.

    1997-01-01

    A new specimen was designed for performing in-reactor creep tests on composite materials, specifically on SiC/SiC composites. The design was tailored for irradiation at 800 degrees C in a HFIR RB position. The specimen comprises a composite cylinder loaded by a pressurized internal bladder that is made of Nb1Zr. The experiment was designed for approximately a one year irradiation

  5. Richard Wollheim 1923-2003 / Marek Volt

    Index Scriptorium Estoniae

    Volt, Marek

    2004-01-01

    Järelehüüe anglo-ameerika filosoofile Richard Wollheimile (5. V 1923-4. XI 2003), kes huvitus maalist ja psühhoanalüüsist ning kuulub XX sajandi analüütilist kunstifilosoofiat enim kujundanud filosoofide hulka. Tema peamised tööd: "Art and Its Objects" (1968), "Painting As an Art" (1987), "On Painting and the Self" (1992). Ilmunud ka raamatus: Volt, Marek. Esteetikast. Tallinn : Sirp, 2006

  6. Moessbauer and channeling experiments on TeSi and SmSi

    International Nuclear Information System (INIS)

    Kemerink, G.J.; Boerma, D.O.; Waard, H. de; Wit, J.C. de; Drentje, S.A.

    1980-01-01

    Considerable effort is made to obtain an insight in the structural and electronic properties of ion implanted elemental semiconductors. This research is strongly stimulated by the many applications of semi-conductor devices. We report here on Moessbauer studies of 129 TeSi and 153 SmSi, using the 27.8 keV transition in 129 I and the 103.2 keV transition in 153 Eu, respectively, and on channeling experiments on 128 TeSi and 152 SmSi with a 2 MeV α-beam from the Groningen Van de Graaff generator. In the Moessbauer experiments we used Cu 129 I and EuF 3 .1/2H 2 O as absorber materials. Source and absorber were held at 4.2 K. The implantations were generally done at room temperature with an implantation energy of 100-115 keV. For the Moessbauer and channeling measurements we applied similar Si single crystals and the same implantation and annealing conditions. Crystals with low doses could only be investigated with the Moessbauer effect

  7. Overview of the HIT-SI3 spheromak experiment

    Science.gov (United States)

    Hossack, A. C.; Jarboe, T. R.; Chandra, R. N.; Morgan, K. D.; Sutherland, D. A.; Everson, C. J.; Penna, J. M.; Nelson, B. A.

    2017-10-01

    The HIT-SI and HIT-SI3 spheromak experiments (a = 23 cm) study efficient, steady-state current drive for magnetic confinement plasmas using a novel method which is ideal for low aspect ratio, toroidal geometries. Sustained spheromaks show coherent, imposed plasma motion and low plasma-generated mode activity, indicating stability. Analysis of surface magnetic fields in HIT-SI indicates large n = 0 and 1 mode amplitudes and little energy in higher modes. Within measurement uncertainties all the n = 1 energy is imposed by the injectors, rather than being plasma-generated. The fluctuating field imposed by the injectors is sufficient to sustain the toroidal current through dynamo action whereas the plasma-generated field is not (Hossack et al., Phys. Plasmas, 2017). Ion Doppler spectroscopy shows coherent, imposed plasma motion inside r 10 cm in HIT-SI and a smaller volume of coherent motion in HIT-SI3. Coherent motion indicates the spheromak is stable and a lack of plasma-generated n = 1 energy indicates the maximum q is maintained below 1 for stability during sustainment. In HIT-SI3, the imposed mode structure is varied to test the plasma response (Hossack et al., Nucl. Fusion, 2017). Imposing n = 2, n = 3, or large, rotating n = 1 perturbations is correlated with transient plasma-generated activity. Work supported by the U.S. Department of Energy, Office of Science, Office of Fusion Energy Sciences, under Award Number DE-FG02-96ER54361.

  8. Assessing the ability of mechanistic volatilization models to simulate soil surface conditions: a study with the Volt'Air model.

    Science.gov (United States)

    Garcia, L; Bedos, C; Génermont, S; Braud, I; Cellier, P

    2011-09-01

    Ammonia and pesticide volatilization in the field is a surface phenomenon involving physical and chemical processes that depend on the soil surface temperature and water content. The water transfer, heat transfer and energy budget sub models of volatilization models are adapted from the most commonly accepted formalisms and parameterizations. They are less detailed than the dedicated models describing water and heat transfers and surface status. The aim of this work was to assess the ability of one of the available mechanistic volatilization models, Volt'Air, to accurately describe the pedo-climatic conditions of a soil surface at the required time and space resolution. The assessment involves: (i) a sensitivity analysis, (ii) an evaluation of Volt'Air outputs in the light of outputs from a reference Soil-Vegetation-Atmosphere Transfer model (SiSPAT) and three experimental datasets, and (iii) the study of three tests based on modifications of SiSPAT to establish the potential impact of the simplifying assumptions used in Volt'Air. The analysis confirmed that a 5 mm surface layer was well suited, and that Volt'Air surface temperature correlated well with the experimental measurements as well as with SiSPAT outputs. In terms of liquid water transfers, Volt'Air was overall consistent with SiSPAT, with discrepancies only during major rainfall events and dry weather conditions. The tests enabled us to identify the main source of the discrepancies between Volt'Air and SiSPAT: the lack of gaseous water transfer description in Volt'Air. They also helped to explain why neither Volt'Air nor SiSPAT was able to represent lower values of surface water content: current classical water retention and hydraulic conductivity models are not yet adapted to cases of very dry conditions. Given the outcomes of this study, we discuss to what extent the volatilization models can be improved and the questions they pose for current research in water transfer modeling and parameterization

  9. The VESUVIO electron volt neutron spectrometer

    Science.gov (United States)

    Mayers, J.; Reiter, G.

    2012-04-01

    This paper describes the VESUVIO electron volt neutron spectrometer at the ISIS pulsed neutron source and its data analysis routines. VESUVIO is used primarily for the measurement of proton momentum distributions in condensed matter systems, but can also be used to measure the kinetic energies of heavier masses and bulk in-situ sample compositions. A series of VESUVIO runs on the same zirconium hydride sample over the past two years show that (1) kinetic energies of protons can be measured to an absolute accuracy of ˜1%. (2) Measurements of the proton momentum distribution n(p) are highly reproducible from run to run. This shows that small changes in kinetic energy and the detailed shape of n(p) with parameters such as temperature, pressure and sample composition can be reliably extracted from VESUVIO data. (3) The impulse approximation (IA) is well satisfied on VESUVIO. (4) The small deviations from the IA due to the finite momentum transfer of measurement are well understood. (5) There is an anomaly in the magnitude of the inelastic neutron cross-section of the protons in zirconium hydride, with an observed reduction of 10% ± 0.3% from that given in standard tables. This anomaly is independent of energy transfer to within experimental error. Future instrument developments are discussed. These would allow the measurement of n(p) in other light atoms, D, 3He, 4He, Li, C and O and measurement of eV electronic and magnetic excitations.

  10. The VESUVIO electron volt neutron spectrometer

    International Nuclear Information System (INIS)

    Mayers, J; Reiter, G

    2012-01-01

    This paper describes the VESUVIO electron volt neutron spectrometer at the ISIS pulsed neutron source and its data analysis routines. VESUVIO is used primarily for the measurement of proton momentum distributions in condensed matter systems, but can also be used to measure the kinetic energies of heavier masses and bulk in-situ sample compositions. A series of VESUVIO runs on the same zirconium hydride sample over the past two years show that (1) kinetic energies of protons can be measured to an absolute accuracy of ∼1%. (2) Measurements of the proton momentum distribution n(p) are highly reproducible from run to run. This shows that small changes in kinetic energy and the detailed shape of n(p) with parameters such as temperature, pressure and sample composition can be reliably extracted from VESUVIO data. (3) The impulse approximation (IA) is well satisfied on VESUVIO. (4) The small deviations from the IA due to the finite momentum transfer of measurement are well understood. (5) There is an anomaly in the magnitude of the inelastic neutron cross-section of the protons in zirconium hydride, with an observed reduction of 10% ± 0.3% from that given in standard tables. This anomaly is independent of energy transfer to within experimental error. Future instrument developments are discussed. These would allow the measurement of n(p) in other light atoms, D, 3 He, 4 He, Li, C and O and measurement of eV electronic and magnetic excitations. (paper)

  11. Enhancing Near Zero Volt Storage Tolerance of Lithium-ion Batteries

    Science.gov (United States)

    Crompton, Kyle R.

    discharge measurements were performed and show that double layer capacitance likely plays a major role in determining the behavior of electrode potentials during near zero volt storage. To further the viability of the anode pre-lithiation method in LiCoO2/MCMB cells, stabilization coatings on the cathode materials are being investigated to increase the tolerance of the cathode to the low potentials it may experience during near zero volt storage of an RLE lithium ion cell. Results show that an AlPO4 coating prevents cation exhange in the cathode crystal structure and substantially increases the cathode's resilience to low electrochemical potentials. Investigations into applying anode pre-lithiation to cells utilizing LiNiCoAlO2 (NCA) cathodes have also been initiated and found to maintain the anode potential below the copper dissolution potential during near zero volt storage. RLE NCA/MCMB cells showed strong recharge performance and improved rate capability retention over a conventional NCA/MCMB cell after ten, 3-day near zero volt storage periods. Scale up of reversible lithium management to NCA/MCMB x3450 pouch cells was achieved using bath lithium addition and rendered a cell that retained 100% of its discharge performance after a 14 day period at near zero volts under fixed load. The near zero volt storage tolerance of lithium ion cells utilizing an advanced, high energy density lithium rich cathode material (0.49Li2MnO3˙0.51LiNi 0.37Co0.24Mn0.39O2 or HE5050) has also been studied and found to be high at room temperature without the need for anode pre-lithiation. HE5050/MCMB cells maintained 100% of their discharge capacity after five, 3-day and five, 7-day near zero volt storage periods at room temperature. HE5050/MCMB also maintained 99% of their discharge capacity after two, 3-day near zero volt storage periods at 40°C. The high first cycle loss and lower intercalation potential of the HE5050 cathode lead to the anode potential remaining <2.8 V vs. Li/Li+ during

  12. The ExaVolt Antenna: Concept and Development Updates

    Directory of Open Access Journals (Sweden)

    Pfendner Carl

    2017-01-01

    Full Text Available A flux of ultrahigh energy neutrinos is expected both directly from sources and from interactions between ultrahigh energy cosmic rays and the cosmic microwave background. Using the cost-effective radio Cherenkov technique to search for these neutrinos, the ExaVolt Antenna (EVA is a mission concept that aims to build on the capabilities of earlier radio-based balloon-borne neutrino detectors and increase the sensitivity to lower energies and fluxes. The novel EVA design exploits the surface of the balloon to provide a focusing reflector that aims to provide a signal gain of ~ 30 dBi (compared to 10 dBi on ANITA. This increase in gain when combined with a large instantaneous viewing angle will yield a 10-fold increase in sensitivity and will allow this balloon-borne experiment to probe the expected low neutrino fluxes even at energies greater than 1019 eV. This contribution will present an overview of the mission concept, recent technology developments, and the results of a hang test of a 1:20-scale model which demonstrates the effectiveness of the design.

  13. Quantum confinement in Si and Ge nanostructures: Theory and experiment

    International Nuclear Information System (INIS)

    Barbagiovanni, Eric G.; Lockwood, David J.; Simpson, Peter J.; Goncharova, Lyudmila V.

    2014-01-01

    The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication methods in terms of both their structural and optical properties. Structural properties include interface states, defect states in a matrix material, and stress, all of which alter the electronic states and hence the measured optical properties. We demonstrate how variations in the fabrication method lead to differences in the NS properties, where the most relevant parameters for each type of fabrication method are highlighted. Si embedded in, or layered between, SiO 2 , and the role of the sub-oxide interface states embodies much of the discussion. Other matrix materials include Si 3 N 4 and Al 2 O 3 . Si NSs exhibit a complicated optical spectrum, because the coupling between the interface states and the confined carriers manifests with varying magnitude depending on the dimension of confinement. Ge NSs do not produce well-defined luminescence due to confined carriers, because of the strong influence from oxygen vacancy defect states. Variations in Si and Ge NS properties are considered in terms of different theoretical models of QC (effective mass approximation, tight binding method, and pseudopotential method). For each theoretical model, we discuss the treatment of the relevant experimental parameters

  14. Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures

    KAUST Repository

    Dong, Y.

    2014-07-26

    Si-Ge interdiffusion and strain relaxation were studied in a metastable SiGe epitaxial structure. With Ge concentration profiling and ex-situ strain analysis, it was shown that during thermal anneals, both Si-Ge interdiffusion and strain relaxation occurred. Furthermore, the time evolutions of both strain relaxation and interdiffusion were characterized. It showed that during the ramp-up stage of thermal anneals at higher temperatures (800°C and 840°C), the degree of relaxation, R, reached a “plateau”, while interdiffusion was negligible. With the approximation that the R value is constant after the ramp-up stage, a quantitative interdiffusivity model was built to account for both the effect of strain relaxation and the impact of the relaxation induced dislocations, which gave good agreement with the experiment data.

  15. On the suitability of Peltier cooled Si-PIN detectors in transmission experiments

    International Nuclear Information System (INIS)

    Murty, V.R.K.; Devan, K.R.S.

    2001-01-01

    The performance of a Peltier cooled Si-PIN detector is compared with that for a Freolectric cooled Si(Li) detector, references being made to transmission experiments that evaluate total cross sections at low photon energies. The results of these measurements are discussed. (author)

  16. Line 400000 volts Marlenheim-Vigy: step of summary draft; Liaison 400000 volts marlenheim-vigy: etape d'avant projet sommaire

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-07-01

    The rebuilding of the line 225000 volts by a 400000 volts line, between Marlenheim and Vigy, will allow to reinforce energy exchanges between Alsace and Lorraine, to reassure the city of Strasbourg and at long dated, assure the european train TGV-east alimentation. (A.L.B.)

  17. Battery Test Manual For 48 Volt Mild Hybrid Electric Vehicles

    International Nuclear Information System (INIS)

    Walker, Lee Kenneth

    2017-01-01

    This manual details the U.S. Advanced Battery Consortium and U.S. Department of Energy Vehicle Technologies Program goals, test methods, and analysis techniques for a 48 Volt Mild Hybrid Electric Vehicle system. The test methods are outlined stating with characterization tests, followed by life tests. The final section details standardized analysis techniques for 48 V systems that allow for the comparison of different programs that use this manual. An example test plan is included, along with guidance to filling in gap table numbers.

  18. Battery Test Manual For 48 Volt Mild Hybrid Electric Vehicles

    Energy Technology Data Exchange (ETDEWEB)

    Walker, Lee Kenneth [Idaho National Lab. (INL), Idaho Falls, ID (United States)

    2017-03-01

    This manual details the U.S. Advanced Battery Consortium and U.S. Department of Energy Vehicle Technologies Program goals, test methods, and analysis techniques for a 48 Volt Mild Hybrid Electric Vehicle system. The test methods are outlined stating with characterization tests, followed by life tests. The final section details standardized analysis techniques for 48 V systems that allow for the comparison of different programs that use this manual. An example test plan is included, along with guidance to filling in gap table numbers.

  19. Particle physicist's dreams about PetaelectronVolt laser plasma accelerators

    International Nuclear Information System (INIS)

    Vesztergombi, G.

    2012-01-01

    Present day accelerators are working well in the multi TeV energy scale and one is expecting exciting results in the coming years. Conventional technologies, however, can offer only incremental (factor 2 or 3) increase in beam energies which does not follow the usual speed of progress in the frontiers of high energy physics. Laser plasma accelerators theoretically provide unique possibilities to achieve orders of magnitude increases entering the PetaelectronVolt (PeV) energy range. It will be discussed what kind of new perspectives could be opened for the physics at this new energy scale. What type of accelerators would be required?.

  20. Virtualized Networks and Virtualized Optical Line Terminal (vOLT)

    Science.gov (United States)

    Ma, Jonathan; Israel, Stephen

    2017-03-01

    The success of the Internet and the proliferation of the Internet of Things (IoT) devices is forcing telecommunications carriers to re-architecture a central office as a datacenter (CORD) so as to bring the datacenter economics and cloud agility to a central office (CO). The Open Network Operating System (ONOS) is the first open-source software-defined network (SDN) operating system which is capable of managing and controlling network, computing, and storage resources to support CORD infrastructure and network virtualization. The virtualized Optical Line Termination (vOLT) is one of the key components in such virtualized networks.

  1. Investigation of reactivity between SiC and Nb-1Zr in planned irradiation creep experiments

    Energy Technology Data Exchange (ETDEWEB)

    Lewinsohn, C.A.; Hamilton, M.L.; Jones, R.H.

    1997-08-01

    Thermodynamic calculations and diffusion couple experiments showed that SiC and Nb-1Zr were reactive at the upper range of temperatures anticipated in the planned irradiation creep experiment. Sputter-deposited aluminum oxide (Al{sub 2}O{sub 3}) was selected as a diffusion barrier coating. Experiments showed that although the coating coarsened at high temperature it was an effective barrier for diffusion of silicon from SiC into Nb-1Zr. Therefore, to avoid detrimental reactions between the SiC composite and the Nb-1Zr pressurized bladder during the planned irradiation creep experiment, a coating of Al{sub 2}O{sub 3} will be required on the Nb-1Zr bladder.

  2. Motivações do conceito de corpo-si: corpo-si, atividade, experiência = Motivations of the concept of selfbody: selfbody, activity, experience

    Directory of Open Access Journals (Sweden)

    Schwartz, Yves

    2014-01-01

    Full Text Available Este texto busca explicar a função de convergências e questões possibilitadoras do desenvolvimento da tese segundo a qual toda atividade de trabalho é sempre “uso de si, por si e por outros” (SCHWARTZ, 1987. Sucessivas reformulações levaram ao estabelecimento do seguinte princípio: toda atividade industriosa é sempre uma “dramática do uso de um corpo-si” (remetendo “dramática” à necessidade contínua de travar debates com normas. Sendo a atividade humana identificada assim como um contínuo debate de normas cujo lócus é o corpo-si, convém perguntar como, em termos de diferentes medidas temporais, esses debates se encaixam (à maneira das bonecas russas, ou seja, de que maneira as relações valorativas nos meios de vida e de trabalho se incorporam ao âmago do corpo-si, inclusive em termos de temporalidades mais curtas, “escondidas no corpo”. Cabe assim entender qual é a unidade enigmática dessa entidade – o corpo-si – que acumula experiência e saberes de formas extremamente diversas, notadamente em sua relação com a linguagem, que articula patrimônio epistêmico e sensibilidade axiológica, sem deixar de estar disponível para ou restrita por micro-escolhas e reajustamentos que a vida não cessa de lhe propor ou impor. O texto, retomando parcialmente, segundo seus objetivos, a distinção entre idem e ipse (RICOEUR, pretende conceber debates de normas encaixados como o cerne da dialética entre essas dimensões

  3. Quality control of the SiPM in the application of large HEP experiments

    International Nuclear Information System (INIS)

    Li Yongzheng; Cheng Yue; Wang Kaijun; Li Bocheng; Liang Kun; Yang Ru; Han Dejun

    2012-01-01

    Large-scale high-energy physics (HEP) experiments have strict requirements on the reliability, consistency and service life for the detectors, it is imperative to set up a quality control system for the involved Silicon Photomultipliers (SiPMs). The essential parameters of the SiPMs are numerous, including reversed leakage current, breakdown voltage, dark count rate, gain, photon detection efficiency, pulse high distribution, temperature coefficient and optical crosstalk etc., characterizing of SiPM should follow an optimal measurement procedures and rules to realize the rapid screening and strict quality control. This paper will introduce the new progress of 1 mm × 1 mm large dynamic range SiPM developed in the Novel Device Laboratory, Beijing Normal University, as well as the measurement guidelines and procedures from chips to packaged devices. (authors)

  4. Study the radiation damage effects in Si microstrip detectors for future HEP experiments

    Energy Technology Data Exchange (ETDEWEB)

    Lalwani, Kavita, E-mail: kavita.phy@mnit.ac.in [Malaviya National Institute of Technology (MNIT) Jaipur, Jaipur-302017 (India); Jain, Geetika; Dalal, Ranjeet; Ranjan, Kirti; Bhardwaj, Ashutosh [University of Delhi (DU), Delhi-110007 (India)

    2016-07-15

    Silicon (Si) detectors are playing a key role in High Energy Physics (HEP) experiments due to their superior tracking capabilities. In future HEP experiments, like upgrade of the Compact Muon Solenoid (CMS) experiment at the Large Hadron Collider (LHC), CERN, the silicon tracking detectors will be operated in a very intense radiation environment. This leads to both surface and bulk damage in Si detectors, which in turn will affect the operating performance of Si detectors. It is important to complement the measurements of the irradiated Si strip detectors with device simulation, which helps in understanding of both the device behavior and optimizing the design parameters needed for the future Si tracking system. An important ingredient of the device simulation is to develop a radiation damage model incorporating both bulk and surface damage. In this work, a simplified two-trap model is incorporated in device simulation to describe the type-inversion. Further, an extensive simulation of effective doping density as well as electric field profile is carried out at different temperatures for various fluences.

  5. Study the radiation damage effects in Si microstrip detectors for future HEP experiments

    International Nuclear Information System (INIS)

    Lalwani, Kavita; Jain, Geetika; Dalal, Ranjeet; Ranjan, Kirti; Bhardwaj, Ashutosh

    2016-01-01

    Silicon (Si) detectors are playing a key role in High Energy Physics (HEP) experiments due to their superior tracking capabilities. In future HEP experiments, like upgrade of the Compact Muon Solenoid (CMS) experiment at the Large Hadron Collider (LHC), CERN, the silicon tracking detectors will be operated in a very intense radiation environment. This leads to both surface and bulk damage in Si detectors, which in turn will affect the operating performance of Si detectors. It is important to complement the measurements of the irradiated Si strip detectors with device simulation, which helps in understanding of both the device behavior and optimizing the design parameters needed for the future Si tracking system. An important ingredient of the device simulation is to develop a radiation damage model incorporating both bulk and surface damage. In this work, a simplified two-trap model is incorporated in device simulation to describe the type-inversion. Further, an extensive simulation of effective doping density as well as electric field profile is carried out at different temperatures for various fluences.

  6. Prácticas de Física: Resistencia de un voltímetro

    OpenAIRE

    Beléndez, Augusto; Bernabeu, Guillermo; Vera Guarinos, Jenaro; Pastor Antón, Carlos; Martín García, Agapito

    1988-01-01

    El objetivo de esta práctica es determinar la resistencia interna de un voltímetro. Para ello se utilizan varias resistencias de valor conocido. El voltímetro es un aparato que sirve para medir la diferencia de potencial entre dos puntos de un circuito. Los voltímetros de aguja se basan en el mismo principio que el amperímetro de aguja, pues ambos se pueden construir mediante un galvanómetro de cuadro móvil, pero en el caso del voltímetro se monta en serie con el galvanómetro una resistencia ...

  7. Tähenduslik vorm ja esteetiline emotsioon : formalism analüütilises perspektiivis / Marek Volt

    Index Scriptorium Estoniae

    Volt, Marek

    2004-01-01

    Inglise kunstikriitiku Clive Belli (1881-1964) seisukohtadest raamatus "Kunst", mida peetakse formalismi teoreetiliseks õigustuseks. Ilmunud ka raamatus: Volt, Marek. Esteetikast. Tallinn : Sirp, 2006

  8. On the suitability of P Si-PIN detectors in transmission experiments

    International Nuclear Information System (INIS)

    Murty, V.R.K.; Devan, K.R.S.

    2000-01-01

    There has been considerable interest, in the recent past, in the development of detector technology. In this context, new detectors, especially room temperature operated detectors and inexpensive cooling systems have recently entered the market. These new systems replace the old systems where there are inadequate facilities to operate them to achieve superior performance. Such performance capabilities of different systems, on a comparative basis have not been widely published in the recent past. In this direction, the Peltier cooled detectors have entered the market and are replacing the conventional Si(Li) detectors. In between the conventional Si(Li) detectors and Peltier cooled Si-PIN detectors, the freolectric cooled Si(Li) detectors were also used in Radiation Physics applications. In this paper, the performance of the Peltier cooled Si-PIN detector in comparison with a Freolectric cooled Si(Li) detector has been studied in Transmission experiments to evaluate the total cross sections at low energies and the results are discussed. (author)

  9. Marker experiments in growth studies of Ni2Si, Pd2Si, and CrSi2 formed both by thermal annealing and by ion mixing

    International Nuclear Information System (INIS)

    Hung, L.S.; Mayer, J.W.; Pai, C.S.; Lau, S.S.

    1985-01-01

    Inert markers (evaporated tungsten and silver) were used in growth studies of silicides formed both by thermal annealing and by ion mixing in the Ni/Si, Pd/Si, and Cr/Si systems. The markers were initially imbedded inside silicides and backscattering spectrometry was used to determine the marker displacement after different processing conditions. The results obtained in thermal annealing are quite consistent with that found in previous investigations. Ni is the dominant diffusing species in Ni 2 Si, while Si is the diffusing species in CrSi 2 . In Pd 2 Si, both Pd and Si are moving species with Pd the faster of the two. In contrast, in growth of silicides by ion irradiation Si is the faster diffusing species in all three systems

  10. Volt-second consumption in tokamaks with sawtooth activity

    International Nuclear Information System (INIS)

    Houlberg, W.A.

    1987-01-01

    The effects of sawtooth activity on the poloidal magnetic flux and energy balances in tokamak plasmas on a diffusive timescale are evaluated through the application of conservation principles to Maxwell's equations. Poloidal magnetic flux (volt-second) consumption can be partitioned into internal and dissipative components by two methods: the 'axial method' based on a magnetic flux balance and the 'Poynting method' based on a magnetic energy balance. Both require additional terms that specifically account for the poloidal flux and magnetic energy changes during magnetic reconnection derived from analysis on a magnetohydrodynamic (MHD) timescale. In experimental analyses these terms are absorbed in the inferred resistive dissipation, while in predictive analyses thay must be evaluated directly. The dissipation of poloidal flux by sawtooth activity can exceed the normal resistive dissipation when the axial method of accounting is used

  11. Si(Li) detector system for application to x-ray astronomy rocket experiments

    International Nuclear Information System (INIS)

    Griffiths, R.E.; Cheron, C.; Friant, A.; Jehanno, C.; Rocchia, R.; Rothenflug, R.; Testard, O.

    1975-01-01

    The problems associated with the use of Si(Li) detectors in x-ray astronomy rocket experiments are discussed. In particular a detector system is described that can be used at the focus of a grazing-incidence paraboloid telescope for the energy range 0.3 to 2 keV. (U.S.)

  12. Mega-electron-volt ultrafast electron diffraction at SLAC National Accelerator Laboratory

    Energy Technology Data Exchange (ETDEWEB)

    Weathersby, S. P.; Brown, G.; Chase, T. F.; Coffee, R.; Corbett, J.; Eichner, J. P.; Frisch, J. C.; Fry, A. R.; Gühr, M.; Hartmann, N.; Hast, C.; Hettel, R.; Jobe, R. K.; Jongewaard, E. N.; Lewandowski, J. R.; Li, R. K., E-mail: lrk@slac.stanford.edu; Lindenberg, A. M.; Makasyuk, I.; May, J. E.; McCormick, D. [SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); and others

    2015-07-15

    Ultrafast electron probes are powerful tools, complementary to x-ray free-electron lasers, used to study structural dynamics in material, chemical, and biological sciences. High brightness, relativistic electron beams with femtosecond pulse duration can resolve details of the dynamic processes on atomic time and length scales. SLAC National Accelerator Laboratory recently launched the Ultrafast Electron Diffraction (UED) and microscopy Initiative aiming at developing the next generation ultrafast electron scattering instruments. As the first stage of the Initiative, a mega-electron-volt (MeV) UED system has been constructed and commissioned to serve ultrafast science experiments and instrumentation development. The system operates at 120-Hz repetition rate with outstanding performance. In this paper, we report on the SLAC MeV UED system and its performance, including the reciprocal space resolution, temporal resolution, and machine stability.

  13. On the use of thin ion implanted Si detectors in heavy ion experiments

    International Nuclear Information System (INIS)

    Lavergne-Gosselin, L.; Stab, L.; Lampert, M.O.

    1988-10-01

    We present test results on the use of thin ion implanted epitaxial Si detectors for registration of low- and medium energy heavy fragments in nuclear reactions. A linear energy response for very low energy nuclei has been observed. A test of 10 μm + 300 μm telescopes under realistic experimental conditions for heavy ion experiments exhibits the possibilities to use these detectors for the measurements of multifragmentation products. (authors)

  14. CERCA's 25 years experience in U3Si2 fuel manufacturing

    International Nuclear Information System (INIS)

    Durand, JP.; Duban, B.; Lavastre, Y.; Perthuis, S. de

    2003-01-01

    This paper documents the experience gained at CERCA in manufacturing, testing, and inspecting U 3 Si 2 fuel elements for various Material Test Reactors (MTR) since the beginning of the RERTR Program in 1978, up to now. It emphasises how the company controls the product to insure compliance with the fuel-related safety parameters. Finally, those statements are considered in the UMo fuel production perspective. (author)

  15. The volt-ampere characteristic and pole-Frenkel effect of TIS crystal

    International Nuclear Information System (INIS)

    Kahramanova, S.M.; Mammadova, G.E.; Abdullayeva, I.A.

    2016-01-01

    As known, some features were observed at the Volt-Ampere Character while current severity deviation from voltage and liner dependence, which means that all happen at Volt-Ampere Character of upper oblasts than ohmic oblast. At this time, in many cases electric properties can not be provide one conductivity mechanism in the powerful electric field and it is explained by different mechanisms at different quantity oblast of electric field intensity. It was determined that, current in the non-liner part of Volt-Ampere Character of the TIS crystal conditioned with weak field effect and is explained in the context of Pul-Frenkel thermal field theory.

  16. A step-by-step experiment of 3C-SiC hetero-epitaxial growth on 4H-SiC by CVD

    Energy Technology Data Exchange (ETDEWEB)

    Xin, Bin [School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi’an 710071 (China); Jia, Ren-Xu, E-mail: rxjia@mail.xidian.edu.cn [School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi’an 710071 (China); Hu, Ji-Chao [School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi’an 710071 (China); Tsai, Cheng-Ying [Graduate Institute of Electronics Engineering, National Taiwan University, 10617 Taipei, Taiwan (China); Lin, Hao-Hsiung, E-mail: hhlin@ntu.edu.tw [Graduate Institute of Electronics Engineering, National Taiwan University, 10617 Taipei, Taiwan (China); Graduate Institute of Photonics and Optoelectronics, National Taiwan University, 10617 Taipei, Taiwan (China); Zhang, Yu-Ming [School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi’an 710071 (China)

    2015-12-01

    Highlights: • A step-by-step experiment to investigate the growth mechanism of SiC hetero-epitaxial is proposed. • It has shown protrusive regular “hill” morphology with much lower density of DPB defect in our experiment, which normally were in high density with shallow groove. Based on the defect morphology, an anisotropy migration rate phenomenon of adatoms has been regarded as forming the morphology of DPB defects and a new “DPB defects assist epitaxy” growth mode has been proposed based on Frank-van der Merwe growth mode. - Abstract: To investigate the growth mechanism of hetero-epitaxial SiC, a step-by-step experiment of 3C-SiC epitaxial layers grown on 4H-SiC on-axis substrates by the CVD method are reported in this paper. Four step experiments with four one-quarter 4H-SiC wafers were performed. Optical microscopy and atomic force microscopy (AFM) were used to characterize the morphology of the epitaxial layers. It was previously found that the main factor affecting the epilayer morphology was double-positioning boundary (DPB) defects, which normally were in high density with shallow grooves. However, a protrusive regular “hill” morphology with a much lower density was shown in our experiment in high-temperature growth conditions. The anisotropic migration of adatoms is regarded as forming the morphology of DPB defects, and a new “DPB defects assist epitaxy” growth mode has been proposed based on the Frank-van der Merwe growth mode. Raman spectroscopy and X-ray diffraction were used to examine the polytypes and the quality of the epitaxial layers.

  17. Hot stage nanoindentation in multi-component Al-Ni-Si alloys: Experiment and simulation

    Energy Technology Data Exchange (ETDEWEB)

    Richter, A. [Institute of Polymer Technology and Materials Engineering, Loughborough University, Loughborough LE11 3TU (United Kingdom); Department of Engineering, University of Applied Sciences Wildau (Berlin), Bahnhofstrasse 1, Wildau 15745 (Germany)], E-mail: asta.richter@tfh-wildau.de; Chen, C.-L. [Institute of Polymer Technology and Materials Engineering, Loughborough University, Loughborough LE11 3TU (United Kingdom); Smith, R.; McGee, E. [Department of Mathematical Sciences, Loughborough University, Loughborough LE11 3TU (United Kingdom); Thomson, R.C. [Institute of Polymer Technology and Materials Engineering, Loughborough University, Loughborough LE11 3TU (United Kingdom); Kenny, S.D. [Department of Mathematical Sciences, Loughborough University, Loughborough LE11 3TU (United Kingdom)

    2008-10-25

    The mechanical properties of individually pure and intermetallic phases of typical Al-Ni-Si piston alloys are investigated at different temperatures using hot stage nanoindentation. The hardness and the indentation modulus of a number of phases are determined at room temperature, 500 K and 650 K. Both, hardness and reduced modulus drop with increasing temperature in different ratios for the various phases. Increasing Ni content in the grains improves the mechanical stability of the material at elevated temperatures in general. The indentation patterns are studied using atomic force microscopy with particular reference to the indentation depths and pile-up effects. Site-specific samples from the material surrounding the nanoindents are prepared using a focussed ion beam field emission gun for examination in the transmission electron microscope. This allows direct observation of material changes as a result of the indentation process in the different phases within the alloy system. Corresponding linked atomistic finite element calculations have been carried out for Si and Ni-Al systems as a function of increasing Ni content at various temperatures. The results show only a small difference in the mechanical behaviour of Si between 300 K and 650 K as observed in the experiments. Large differences for Al at both temperatures studied result in an increase of plasticity with rising temperature and atomic motion that changes from slip in well-defined planes to a viscous fluid-like behaviour. The formation of dislocations and slip bands during indentation for the Ni-Al systems is studied.

  18. Estimation of volt second saving by application of lower hybrid waves on JET

    International Nuclear Information System (INIS)

    Van Houtte, D.

    1987-12-01

    Volt-second saving by application of lower hybrid current discharges on JET is assessed and the extent of the duration time of the flat top current is estimated. A data base obtained mainly on PETULA is compared with theory. Together with an optimization of LH and plasma parameters, a hybrid (OH-LH) current drive operating scenario for volt-second saving is proposed for JET. An RF-assisted ohmic heating current rises up on JET enables volt-second to be saved enough to achieve a longer plasma current flat top than could be achieved by ohmic heating alone. This plasma current, up to I p = 7MA, should last as long as the toroidal and equilibrium field allows it

  19. Validation of extended magnetohydrodynamic simulations of the HIT-SI3 experiment using the NIMROD code

    Science.gov (United States)

    Morgan, K. D.; Jarboe, T. R.; Hossack, A. C.; Chandra, R. N.; Everson, C. J.

    2017-12-01

    The HIT-SI3 experiment uses a set of inductively driven helicity injectors to apply a non-axisymmetric current drive on the edge of the plasma, driving an axisymmetric spheromak equilibrium in a central confinement volume. These helicity injectors drive a non-axisymmetric perturbation that oscillates in time, with relative temporal phasing of the injectors modifying the mode structure of the applied perturbation. A set of three experimental discharges with different perturbation spectra are modelled using the NIMROD extended magnetohydrodynamics code, and comparisons are made to both magnetic and fluid measurements. These models successfully capture the bulk dynamics of both the perturbation and the equilibrium, though disagreements related to the pressure gradients experimentally measured exist.

  20. Quality Assurance on a Custom SiPMs Array for the Mu2e Experiment

    Energy Technology Data Exchange (ETDEWEB)

    Atanov, N.; et al.

    2017-11-20

    The Mu2e experiment at Fermilab will search for the coherent $\\mu \\to e$ conversion on aluminum atoms. The detector system consists of a straw tube tracker and a crystal calorimeter. A pre-production of 150 Silicon Photomultiplier arrays for the Mu2e calorimeter has been procured. A detailed quality assur- ance has been carried out on each SiPM for the determination of its own operation voltage, gain, dark current and PDE. The measurement of the mean-time-to-failure for a small random sample of the pro-production group has been also completed as well as the determination of the dark current increase as a function of the ioninizing and non-ioninizing dose.

  1. Modelling pesticide volatilization after soil application using the mechanistic model Volt'Air

    Science.gov (United States)

    Bedos, Carole; Génermont, Sophie; Le Cadre, Edith; Garcia, Lucas; Barriuso, Enrique; Cellier, Pierre

    Volatilization of pesticides participates in atmospheric contamination and affects environmental ecosystems including human welfare. Modelling at relevant time and spatial scales is needed to better understand the complex processes involved in pesticide volatilization. Volt'Air-Pesticides has been developed following a two-step procedure to study pesticide volatilization at the field scale and at a quarter time step. Firstly, Volt'Air-NH 3 was adapted by extending the initial transfer of solutes to pesticides and by adding specific calculations for physico-chemical equilibriums as well as for the degradation of pesticides in soil. Secondly, the model was evaluated in terms of 3 pesticides applied on bare soil (atrazine, alachlor, and trifluralin) which display a wide range of volatilization rates. A sensitivity analysis confirmed the relevance of tuning to K h. Then, using Volt'Air-Pesticides, environmental conditions and emission fluxes of the pesticides were compared to fluxes measured under 2 environmental conditions. The model fairly well described water temporal dynamics, soil surface temperature, and energy budget. Overall, Volt'Air-Pesticides estimates of the order of magnitude of the volatilization flux of all three compounds were in good agreement with the field measurements. The model also satisfactorily simulated the decrease in the volatilization rate of the three pesticides during night-time as well as the decrease in the soil surface residue of trifluralin before and after incorporation. However, the timing of the maximum flux rate during the day was not correctly described, thought to be linked to an increased adsorption under dry soil conditions. Thanks to Volt'Air's capacity to deal with pedo-climatic conditions, several existing parameterizations describing adsorption as a function of soil water content could be tested. However, this point requires further investigation. Practically speaking, Volt'Air-Pesticides can be a useful tool to make

  2. Contribution to the theoretical and experimental study of the electron-volt effect in N-P junctions

    International Nuclear Information System (INIS)

    Nguyen Van, Dong

    1959-07-01

    The proposed aim of this work is to study the behaviour of a semi-conducting junction under the action of β radiation. These studies were directed on the one hand to direct conversion of the energy radiated by a radioactive source to electric energy usable by means of N-P junctions, and on the other hand to the kinetics of defects produced in the semi-conductor crystals by high energy β rays. In the first part of this work, an attempt has been made to complete the earlier theories of the electron-volt effect in junctions by analysing the effect mathematically. This has led to a single equation containing the electrical and geometric parameters of the semi-conductor and of the junction, and the properties of the incident radiation. Apart from this, the diffusion current of the charge carriers created by the bombardment has been studied in more detail, taking into account all the factors which play a part in the expression of the efficiency of charge collection of a junction. In the second part, where experiments on the irradiation of N-P junctions have been carried out with a 90 Sr- 90 Y source, mention is made of the particular advantages of a gallium arsenide junction capable of operating at relatively high temperatures (in the region of 100 deg. C). The third part presents the study of defects created in a semi-conductor crystal by high-energy β rays, according to the method of electron-volt effect. It is shown here that from a study of the degradation of the short-circuit current of the junction it may be possible to determine the recombination level and the probabilities of electron and hole capture, as from a study of the lifetime decay of minority carriers in a crystal of known type. Experiments on the bombardment of Ge junctions by 2 MeV electrons were performed with a Van de Graaff. Very clear anomalies of the electron-volt effect at 100 deg. K were observed. An attempt was made at interpretation of these anomalies in the junction, taking into account

  3. Atomistic simulations in Si processing: Bridging the gap between atoms and experiments

    International Nuclear Information System (INIS)

    Marques, Luis A.; Pelaz, Lourdes; Lopez, Pedro; Aboy, Maria; Santos, Ivan; Barbolla, Juan

    2005-01-01

    With devices shrinking to nanometric scale, process simulation tools have to shift from continuum models to an atomistic description of the material. However, the limited sizes and time scales accessible for detailed atomistic techniques usually lead to the difficult task of relating the information obtained from simulations to experimental data. The solution consists of the use of a hierarchical simulation scheme: more fundamental techniques are employed to extract parameters and models that are then feed into less detailed simulators which allow direct comparison with experiments. This scheme will be illustrated with the modeling of the amorphization and recrystallization of Si, which has been defined as a key challenge in the last edition of the International Technology Roadmap for Semiconductors. The model is based on the bond defect or IV pair, which is used as the building block of the amorphous phase. The properties of this defect have been studied using ab initio methods and classical molecular dynamics techniques. It is shown that the recombination of this defect depends on the surrounding bond defects, which accounts for the cooperative nature of the amorphization and recrystallization processes. The implementation of this model in a kinetic Monte Carlo code allows extracting data directly comparable with experiments. This approach provides physical insight on the amorphization and recrystallization mechanisms and a tool for the optimization of solid-phase epitaxial-related processes

  4. Evaluation of Requirements for Volt/Var Control and Optimization Function in Distribution Management Systems

    DEFF Research Database (Denmark)

    Rahimi, Saaed; Marinelli, Mattia; Silvestro, Federico

    2012-01-01

    To meet the requirement from new visions within “smart grid” and to provide solutions for many challenges that DSOs (Distribution System Operators) are facing today, we need to develop advanced DMS (Distribution Management System) applications. A centralized Volt/Var Control (VVC) is one of the m...

  5. How many electric miles do Nissan Leafs and Chevrolet Volts in The EV Project travel?

    Energy Technology Data Exchange (ETDEWEB)

    John Smart

    2014-05-01

    This paper presents travel statistics and metrics describing the driving behavior of Nissan Leaf and Chevrolet Volt drivers in the EV Project. It specifically quantifies the distance each group of vehicles drives each month. This paper will be published to INL's external website and will be accessible by the general public.

  6. An optimization approach for online identification of harmonic resonance due to pending Volt/VAr operation

    Science.gov (United States)

    McBee, Kerry D.

    The emphasis on creating a more efficient distribution system has led many utility companies to employ dynamic voltage and VAr compensation (Volt/VAr) applications that reduce energy demand, generation, and losses associated with the transmission and distribution of energy. To achieve these benefits, Volt/VAr applications rely upon algorithms to control voltage support equipment, such as transformer load tap changers, voltage regulators, and capacitor banks. The majority of these algorithms utilize metaheuristic programming methods to determine the Volt/VAr scheme that produces the most energy efficient operating conditions. It has been well documented that the interaction between capacitor bank reactance and the inductive reactance of a distribution system can produce parallel harmonic resonance that can damage utility and customer equipment. The Volt/VAr controlling algorithms that account for harmonics do so in an indirect manner that can mask harmonic resonance conditions. Unlike previous research endeavors, the primary focus of the method described within this dissertation is to identify Volt/VAr schemes that prevent harmonic resonance due to capacitor bank operation. Instead of a metaheuristic approach, the harmonic resonance identification algorithm relies upon constrained mixed integer nonlinear programming (MINLP), which is more suited for analyzing impedance characteristics created by the energized states of a system of capacitor banks. Utilizing a numerical approach improves the accuracy of identifying harmonic resonance conditions, while also reducing the complexity of the process by exclusively relying upon the system's admittance characteristics. The novel harmonic resonance identification method is applicable to distribution systems that are dynamically reconfigured, which can result in a number of unknown harmonic resonance producing conditions, a feature unavailable with existing controlling algorithms. The ability to identify all harmonic

  7. Recent results from the HIT-II and HIT-SI helicity injection current drive experiments

    International Nuclear Information System (INIS)

    Jarboe, T.R.; Hamp, W.T.; Izzo, V.A.; Nelson, B.A.; O'Neill, R.G.; Raman, R.; Redd, A.J.; Sieck, P.E.; Smith, R.J.

    2005-01-01

    Three important results are reported. 1) CHI startup has produced 100 kA of closed current without using poloidal field (PF) coils or any transformer action. The initial equilibrium is then driven to 240 kA with a 3 V transformer loop voltage, indicating high quality plasma. 2) For the first time CHI alone has produced toroidal currents (350 kA) that far exceed q a I inj , and with I p /I tf as high as 1.2. The key to these new results appears to be having the toroidal field small enough that relaxation will occur. 3) The steady inductive helicity injection spheromak experiment has operated at 5 kHz for 6 ms with current amplitudes up to 11 kA in each injector. The helicity injection rate is nearly constant with the ExB flow always into the plasma and not into the walls. NIMROD simulations of HIT-SI show a buildup of spheromak fields. (author)

  8. Age-related degradation of Westinghouse 480-volt circuit breakers

    International Nuclear Information System (INIS)

    Subudhi, M.; MacDougall, E.; Kochis, S.; Wilhelm, W.; Lee, B.S.

    1990-11-01

    After the McGuire event in 1987 relating to failure of the center pole weld in one of its reactor trip breakers, activities were initiated by the NRC to investigate the probable causes. A review of operating experience suggested that the burning of coils, jamming of the operating mechanism, and deterioration of the contacts dominated the breakers failures. Although failures of the pole shaft weld were not included as one of the generic problems, the NRC augmented inspection team had suspected that these welds were substandard which led them to crack prematurely. A DS-416 low voltage air circuit breaker manufactured by Westinghouse was mechanically cycled to identify age-related degradations. This accelerated aging test was conducted for over 36,000 cycles during nine months. Three separate pole shafts, one with a 60 degree weld, one with a 120 degree and one with a 180 degree were used to characterize the cracking in the pole level welds. In addition, three different operating mechanisms and several other parts were replaced as they became inoperable. The testing yielded many useful results. The burning of the closing coils was found to be the effect of binding in the linkages that are connected to this device. Among the seven welds on the pole shaft, number-sign 1 and number-sign 3 were the critical ones which cracked first to cause misalignment of the pole levers, which, in turn, had led to many problems with the operating mechanism including the burning of coils, excessive wear in certain parts, and overstressed linkages. Based on these findings, a maintenance program is suggested to alleviate the age-related degradations that occur due to mechanical cycling of this type of breaker. 3 refs., 39 figs., 7 tabs

  9. Age-related degradation of Westinghouse 480-volt circuit breakers

    International Nuclear Information System (INIS)

    Subudhi, M.; Shier, W.; MacDougall, E.

    1990-07-01

    An aging assessment of Westinghouse DS-series low-voltage air circuit breakers was performed as part of the Nuclear Plant Aging Research (NPAR) program. The objectives of this study are to characterize age-related degradation within the breaker assembly and to identify maintenance practices to mitigate their effect. Since this study has been promulgated by the failures of the reactor trip breakers at the McGuire Nuclear Station in July 1987, results relating to the welds in the breaker pole lever welds are also discussed. The design and operation of DS-206 and DS-416 breakers were reviewed. Failure data from various national data bases were analyzed to identify the predominant failure modes, causes, and mechanisms. Additional operating experiences from one nuclear station and two industrial breaker-service companies were obtained to develop aging trends of various subcomponents. The responses of the utilities to the NRC Bulletin 88-01, which discusses the center pole lever welds, were analyzed to assess the final resolution of failures of welds in the reactor trips. Maintenance recommendations, made by the manufacturer to mitigate age-related degradation were reviewed, and recommendations for improving the monitoring of age-related degradation are discussed. As described in Volume 2 of this NUREG, the results from a test program to assess degradation in breaker parts through mechanical cycling are also included. The testing has characterized the cracking of center-pole lever welds, identified monitoring techniques to determine aging in breakers, and provided information to augment existing maintenance programs. Recommendations to improve breaker reliability using effective maintenance, testing, and inspection programs are suggested. 13 refs., 21 figs., 8 tabs

  10. Improvements to the ion Doppler spectrometer diagnostic on the HIT-SI experiments

    Science.gov (United States)

    Hossack, Aaron; Chandra, Rian; Everson, Chris; Jarboe, Tom

    2018-03-01

    An ion Doppler spectrometer diagnostic system measuring impurity ion temperature and velocity on the HIT-SI and HIT-SI3 spheromak devices has been improved with higher spatiotemporal resolution and lower error than previously described devices. Hardware and software improvements to the established technique have resulted in a record of 6.9 μs temporal and ≤2.8 cm spatial resolution in the midplane of each device. These allow Ciii and Oii flow, displacement, and temperature profiles to be observed simultaneously. With 72 fused-silica fiber channels in two independent bundles, and an f/8.5 Czerny-Turner spectrometer coupled to a video camera, frame rates of up to ten times the imposed magnetic perturbation frequency of 14.5 kHz were achieved in HIT-SI, viewing the upper half of the midplane. In HIT-SI3, frame rates of up to eight times the perturbation frequency were achieved viewing both halves of the midplane. Biorthogonal decomposition is used as a novel filtering tool, reducing uncertainty in ion temperature from ≲13 to ≲5 eV (with an instrument temperature of 8-16 eV) and uncertainty in velocity from ≲2 to ≲1 km/s. Doppler shift and broadening are calculated via the Levenberg-Marquardt algorithm, after which the errors in velocity and temperature are uniquely specified. Axisymmetric temperature profiles on HIT-SI3 for Ciii peaked near the inboard current separatrix at ≈40 eV are observed. Axisymmetric plasma displacement profiles have been measured on HIT-SI3, peaking at ≈6 cm at the outboard separatrix. Both profiles agree with the upper half of the midplane observable by HIT-SI. With its complete midplane view, HIT-SI3 has unambiguously extracted axisymmetric, toroidal current dependent rotation of up to 3 km/s. Analysis of the temporal phase of the displacement uncovers a coherent structure, locked to the applied perturbation. Previously described diagnostic systems could not achieve such results.

  11. Thermo-mechanical Forming of Al¿Mg¿Si Alloys: Modeling and Experiments

    NARCIS (Netherlands)

    Kurukuri, S.; van den Boogaard, Antonius H.; Ghosh, M.; Miroux, A.; Barlat, F; Moon, Y.H.; Lee, M.G.

    2010-01-01

    In an ongoing quest to realize lighter vehicles with improved fuel efficiency, deformation characteristics of the material AA 6016 is investigated. In the first part of this study, material behavior of Al–Mg–Si sheet alloy is investigated under different process (temperature and strain rate) and

  12. Vertical and lateral ordering of Ge islands grown on Si(001): theory and experiments

    International Nuclear Information System (INIS)

    Montalenti, F; Marzegalli, A; Capellini, G; Seta, M De; Miglio, Leo

    2007-01-01

    A set of recent results concerning lateral and vertical ordering of Ge islands grown on Si(001) is reviewed. Experimental data generated by chemical vapour deposition and analysed by atomic force microscopy and photoelectron spectroscopy are compared with computer simulations and modelling based on atomistic approaches and continuum theory. In particular, we show that it is possible to probe experimentally the detailed strain field generated by buried Ge islands at the surface of the Si capping layer. The observed arrangement of small Ge islands grown over the capping layer is demonstrated to be very close to the one predicted by a simple model where the local chemical potential is inferred from the strain field at the atomic scale, as given by Tersoff-potential molecular dynamics simulations. Moreover, we review recent experimental evidence for lateral ordering, triggered by partial Si capping, in the first layer of Ge islands on Si(001). Theoretical support is given by showing that when two islands lie in close proximity the elastic field is likely to generate a flow of atoms leading to an effective gliding motion along opposite directions of both islands, eventually stopped by the presence of further neighbouring islands

  13. Preliminary results from Brookhaven Experiment 802 with 14.5 GeVu 28Si

    International Nuclear Information System (INIS)

    1987-01-01

    Preliminary data on beam calorimetry, charged particle multiplicities, pseudo-rapidity distributions and hadron spectroscopy from 28 Si + Al and Au at 14.5 GeV per nucleon are presented. Comments on nuclear stopping, multiplicity systematics, and Kπ ratios are offered. 5 refs., 6 figs., 1 tab

  14. Optical characterization of gold chains and steps on the vicinal Si(557) surface: Theory and experiment

    Energy Technology Data Exchange (ETDEWEB)

    Hogan, Conor [Consiglio Nazionale delle Ricerche, Istituto di Struttura della Materia, via Fosso del Cavaliere 100, 00133 Rome (Italy); Department of Physics and European Theoretical Spectroscopy Facility (ETSF), University of Rome ' ' Tor Vergata' ' , Via della Ricerca Scientifica 1, 00133 Rome (Italy); McAlinden, Niall; McGilp, John F. [School of Physics, Trinity College Dublin, Dublin 2 (Ireland)

    2012-06-15

    We present a joint experimental-theoretical study of the reflectance anisotropy of clean and gold-covered Si(557), a vicinal surface of Si(111) upon which gold forms quasi-one-dimensional (1D) chains parallel to the steps. By means of first-principles calculations, we analyse the close relationship between the various surface structural motifs and the optical properties. Good agreement is found between experimental and computed spectra of single-step models of both clean and Au-adsorbed surfaces. Spectral fingerprints of monoatomic gold chains and silicon step edges are identified. The role of spin-orbit coupling (SOC) on the surface optical properties is examined, and found to have little effect. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Grain refinement of AZ31 by (SiC)P: Theoretical calculation and experiment

    International Nuclear Information System (INIS)

    Guenther, R.; Hartig, Ch.; Bormann, R.

    2006-01-01

    Grain refinement of gravity die-cast Mg-alloys can be achieved via two methods: in situ refinement by primary precipitated metallic or intermetallic phases, and inoculation of the melt via ceramic particles that remain stable in the melt due to their high thermodynamic stability. In order to clarify grain refinement mechanisms and optimize possible potent refiners in Mg-alloys, a simulation method for heterogeneous nucleation based on a free growth model has been developed. It allows the prediction of the grain size as a function of the particle size distribution, the volumetric content of ceramic inoculants, the cooling rate and the alloy constitution. The model assumptions were examined experimentally by a study of the grain refinement of (SiC) P in AZ31. Additions of (SiC) P result in significant grain refinement, if appropriate parameters for ceramic particles are chosen. The model makes quantitatively correct predictions for the grain size and its variation with cooling rate

  16. Dispersant optimization using design of experiments for SiC/vinyl ester nanocomposites

    Science.gov (United States)

    Yong, Virginia; Hahn, H. Thomas

    2005-04-01

    The effect of dispersants on particle dispersion and flexural properties of SiC/vinyl ester nanocomposites was studied by factorial and response surface designs. The results show that the coupling agent 'gamma-methacryloxy propyl trimethoxy silane (MPS)' has no adverse side effect on the flexural properties as illustrated by the good correlation between maximizing the flexural strength and minimizing the agglomerates. However, the dispersant 'BYK-W 966' has a slight adverse side effect on the flexural properties although it improves dispersion at higher dosage. With an optimal dosage of MPS and W966, a small amount of SiC in 0.5 wt% results in 8% increase in strength and 14% increase in modulus. The flushing operation using the dispersant '1-octanol/decane' achieves an excellent SiC dispersion but it does not result in improved flexural properties. This confirmed that a better state of nanoparticle dispersion does not necessarily lead to improved flexural properties. A good dispersion coupling with a strong filler/matrix interfacial bonding is the key to obtain enhanced flexural properties.

  17. Connectivity-Enhanced Route Selection and Adaptive Control for the Chevrolet Volt: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Gonder, J.; Wood, E.; Rajagopalan, S.

    2014-09-01

    The National Renewable Energy Laboratory and General Motors evaluated connectivity-enabled efficiency enhancements for the Chevrolet Volt. A high-level model was developed to predict vehicle fuel and electricity consumption based on driving characteristics and vehicle state inputs. These techniques were leveraged to optimize energy efficiency via green routing and intelligent control mode scheduling, which were evaluated using prospective driving routes between tens of thousands of real-world origin/destination pairs. The overall energy savings potential of green routing and intelligent mode scheduling was estimated at 5% and 3% respectively. These represent substantial opportunities considering that they only require software adjustments to implement.

  18. Mass Enhancement of Nearly Trivalent Compound EuCo2Si2: Studied by the de Haas-van Alphen Experiments and Energy Band Calculations

    International Nuclear Information System (INIS)

    Ōnuki, Yoshichika; Hedo, Masato; Nakama, Takao; Nakamura, Ai; Aoki, Dai; Boukahil, Mounir; Haga, Yoshinori; Takeuchi, Tetsuya; Harima, Hisatomo

    2015-01-01

    We succeeded in growing single crystals of EuCo 2 Si 2 by the Bridgman method, and carried out the de Haas-van Alphen (dHvA) experiments. EuCo 2 Si 2 was previously studied from a viewpoint of the trivalent electronic state on the basis of the magnetic susceptibility and X-ray absorption experiments, whereas most of the other Eu compounds order magnetically, with the divalent electronic state. The detected dHvA branches in the present experiments are found to be explained by the results of the full potential linearized augmented plane wave energy band calculations on the basis of a local density approximation (LDA) for YCo 2 Si 2 (LDA) and EuCo 2 Si 2 (LDA + U), revealing the trivalent electronic state. The detected cyclotron effective masses are moderately large, ranging from 1.2 to 2.9 m 0

  19. The Analysis of Structure and Type of Narration in Nasserkhosrow’s Travelogue based on Zheplint Volt’s Theory

    Directory of Open Access Journals (Sweden)

    m Mohammadi Fesharaki

    2013-11-01

    Full Text Available How and to what extent the narrative structure of Nasserkhosrow travelogue can participate in reflecting the thoughts and creating a literary-narrative framework? Why is the structure of Nasserkhosrow travelogue similar to a story plot? And based on Zheplint Volt’s theory, what is the narrative type of Nasserkhosrow travelogue? A unique feature of Nasserkhosrow travelogue, unlike other travelogues, is that it begins with a fictional event and has narrative-literary language, pleasant tales, carefulness and description. Although the overall structure of travelogue is different from stories and novels, this travelogue is more similar to stories than travelogues and reports due to unique narrative and structural reasons. Many structural features of story such as initial state, destructive force, middle state and final phase, have given a different structure to this travelogue. In addition to these unique narrative types, this work can easily attract the addressees. This research tries to analyze the plot structure and narrative type in Nasserkhosrow travelogue based on modern narrative approach of Zheplint Volt. Accordingly, our results show that he has used similar narrative pattern (narrator=character and two internal and zero points of view to express his travel experiences.

  20. Conducted noise from 48 volt DC-DC converters used in telecommunications systems and its mitigation for EMC

    Energy Technology Data Exchange (ETDEWEB)

    Kraft, C. [Lucent Technologies, Inc., Naperville, IL (United States)

    2000-07-01

    Telecommunications switching equipment has been moving toward a distributed DC power concept where 48 volts (or other telephone office voltage) is routed directly onto circuit boards via backplanes. This higher DC voltage is then converted on the circuit board to 5 volts, 3 volts or other logic voltage. One problem with this approach is the generation of a considerable amount of conducted noise current on 48 volt supply leads. Unless some mitigation is used, this noise current, when added to such currents from other boards in the system, can cause failure of electromagnetic compatibility (EMC) tests required by international standards such as EN 300-386-2 [1], or EN 55022 [2], and hence, hurt the ability of the equipment to be marketed. This paper describes in detail the type and frequency range of noise generated by typical 48 volt DC-DC converters as measured in EMC tests on power feeder leads. It provides an analysis of the nature of this noise, a comparison with the requirements of the international standards, and a set of mitigation techniques that not only remove the noise, but satisfy various lightning and grounding requirements, including those of the USA and Europe. (orig.)

  1. Experience melting through the Earth's lower mantle via LH-DAC experiments on MgO-SiO2 and CaO-MgO-SiO2 systems

    Science.gov (United States)

    Baron, Marzena A.; Lord, Oliver T.; Walter, Michael J.; Trønnes, Reidar G.

    2015-04-01

    The large low shear-wave velocity provinces (LLSVPs) and ultra-low velocity zones (ULVZs) of the lowermost mantle [1] are likely characterized by distinct chemical compositions, combined with temperature anomalies. The heterogeneities may have originated by fractional crystallization of the magma ocean during the earliest history of the Earth [2,3] and/or the continued accretion at the CMB of subducted basaltic oceanic crust [4,5]. These structures and their properties control the distribution and magnitude of the heat flow at the CMB and therefore the convective dynamics and evolution of the whole Earth. To determine the properties of these structures and thus interpret the seismic results, a good understanding of the melting phase relations of relevant basaltic and peridotitic compositions are required throughout the mantle pressure range. The melting phase relations of lower mantle materials are only crudely known. Recent experiments on various natural peridotitic and basaltic compositions [6-8] have given wide ranges of solidus and liquidus temperatures at lower mantle pressures. The melting relations for MgO, MgSiO3 and compositions along the MgO-SiO2 join from ab initio theory [e.g. 9,10] is broadly consistent with a thermodynamic model for eutectic melt compositions through the lower mantle based on melting experiments in the MgO-SiO2 system at 16-26 GPa [3]. We have performed a systematic study of the melting phase relations of analogues for peridotitic mantle and subducted basaltic crust in simple binary and ternary systems that capture the major mineralogy of Earth's lower mantle, using the laser-heated diamond anvil cell (LH-DAC) technique at 25-100 GPa. We determined the eutectic melting temperatures involving the following liquidus mineral assemblages: 1. bridgmanite (bm) + periclase (pc) and bm + silica in the system MgO-SiO2 (MS), corresponding to model peridotite and basalt compositions 2. bm + pc + Ca-perovskite (cpv) and bm + silica + cpv in the

  2. Generation of mega-electron-volt electron beams by an ultrafast intense laser pulse

    International Nuclear Information System (INIS)

    Wang Xiaofang; Saleh, Ned; Krishnan, Mohan; Wang Haiwen; Backus, Sterling; Murnane, Margaret; Kapteyn, Henry; Umstadter, Donald; Wang Quandong; Shen Baifei

    2003-01-01

    Mega-electron-volt (MeV) electron emission from the interaction of an ultrafast (τ∼29 fs), intense (>10 18 W/cm 2 ) laser pulse with underdense plasmas has been studied. A beam of MeV electrons with a divergence angle as small as 1 deg. is observed in the forward direction, which is correlated with relativistic filamentation of the laser pulse in plasmas. A novel net-energy-gain mechanism is proposed for electron acceleration resulting from the relativistic filamentation and beam breakup. These results suggest an approach for generating a beam of femtosecond, MeV electrons at a kilohertz repetition rate with a compact ultrafast intense laser system

  3. Simulation studies of the n{sup +}n{sup -} Si sensors having p-spray/p-stop implant for the SiD experiment

    Energy Technology Data Exchange (ETDEWEB)

    Saxena, Pooja; Ranjan, Kirti [Centre for Detector and Related Software Technology, Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Bhardwaj, Ashutosh, E-mail: abhardwaj@physics.du.ac.in [Centre for Detector and Related Software Technology, Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Shivpuri, R.K.; Bhattacharya, Satyaki [Centre for Detector and Related Software Technology, Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)

    2011-12-01

    Silicon Detector (SiD) is one of the proposed detectors for the future International Linear Collider (ILC). In the innermost vertex of the ILC, Si micro-strip sensors will be exposed to the neutron background of around 1-1.6 Multiplication-Sign 10{sup 10} 1 MeV equivalent neutrons cm{sup -2} year{sup -1}. The p{sup +}n{sup -}n{sup +} double-sided Si strip sensors are supposed to be used as position sensitive sensors for SiD. The shortening due to electron accumulation on the n{sup +}n{sup -} side of these sensors leads to uniform spreading of signal over all the n{sup +} strips and thus ensuring good isolation between the n{sup +} strips becomes one of the major issues in these sensors. One of the possible solutions is the use of floating p-type implants introduced between the n{sup +} strips (p-stops) and another alternative is the use of uniform layer of p-type implant on the entire n-side (p-spray). However, pre-breakdown micro-discharge is reported because of the high electric field at the edge of the p-stop/p-spray. An optimization of the implant dose profile of the p-stop and p-spray is required to achieve good electrical isolation while ensuring satisfactory breakdown performance of the Si sensors. Preliminary results of the simulation study performed on the n{sup +}n{sup -} Si sensors having p-stop and p-spray using device simulation program, ATLAS, are presented.

  4. SiPM-based azimuthal position sensor in ANITA-IV Hi-Cal Antarctic balloon experiment

    Science.gov (United States)

    Novikov, A.; Besson, D.; Chernysheva, I.; Dmitrenko, V.; Grachev, V.; Petrenko, D.; Prohira, S.; Shustov, A.; Ulin, S.; Uteshev, Z.; Vlasik, K.

    2017-01-01

    Hi-Cal (High-Altitude Calibration) is a balloon-borne experiment that will be launched in December, 2016 in Antarctica following ANITA-IV (Antarctic Impulsive Transient Antenna) and will generate a broad-band pulse over the frequency range expected from radiation induced by a cosmic ray shower. Here, we describe a device based on an array of silicon photomultipliers (SiPMs) for determination of the azimuthal position of Hi-Cal. The angular resolution of the device is about 3 degrees. Since at the float altitude of ˜38 km the pressure will be ˜0.5 mbar and temperature ˜ - 20 °C, the equipment has been tested in a chamber over a range of corresponding pressures (0.5 ÷ 1000) mbar and temperatures (-40 ÷ +50) °C.

  5. SiPM-based azimuthal position sensor in ANITA-IV Hi-Cal Antarctic balloon experiment

    International Nuclear Information System (INIS)

    Novikov, A; Besson, D; Chernysheva, I; Dmitrenko, V; Grachev, V; Petrenko, D; Shustov, A; Ulin, S; Uteshev, Z; Vlasik, K; Prohira, S

    2017-01-01

    Hi-Cal (High-Altitude Calibration) is a balloon-borne experiment that will be launched in December, 2016 in Antarctica following ANITA-IV (Antarctic Impulsive Transient Antenna) and will generate a broad-band pulse over the frequency range expected from radiation induced by a cosmic ray shower. Here, we describe a device based on an array of silicon photomultipliers (SiPMs) for determination of the azimuthal position of Hi-Cal. The angular resolution of the device is about 3 degrees. Since at the float altitude of ∼38 km the pressure will be ∼0.5 mbar and temperature ∼ − 20 °C, the equipment has been tested in a chamber over a range of corresponding pressures (0.5 ÷ 1000) mbar and temperatures (−40 ÷ +50) °C. (paper)

  6. Central tracker for BM@N experiment based on double side Si-microstrip detectors

    Science.gov (United States)

    Kovalev, Yu.; Kapishin, M.; Khabarov, S.; Shafronovskaia, A.; Tarasov, O.; Makankin, A.; Zamiatin, N.; Zubarev, E.

    2017-07-01

    Design of central tracker system based on Double-Sided Silicon Detectors (DSSD) for BM@N experiment is described. A coordinate plane with 10240 measuring channels, pitch adapter, reading electronics was developed. Each element was tested and assembled into a coordinate plane. The first tests of the plane with 106Ru source were carried out before installation for the BM@N experiment. The results of the study indicate that noisy channels and inefficient channels are less than 3%. In general, single clusters 87% (one group per module of consecutive strips) and 75% of clusters with a width equal to one strip.

  7. 75 FR 21353 - Intel Corporation, Fab 20 Division, Including On-Site Leased Workers From Volt Technical...

    Science.gov (United States)

    2010-04-23

    ... DEPARTMENT OF LABOR Employment and Training Administration [TA-W-73,642] Intel Corporation, Fab 20... of Intel Corporation, Fab 20 Division, including on-site leased workers of Volt Technical Resources... Precision, Inc. were employed on-site at the Hillsboro, Oregon location of Intel Corporation, Fab 20...

  8. Concentration and dispersion characteristics of U, Au and Si in the granite area of northern Guangdong and Southern Jiangxi and their model experiments

    International Nuclear Information System (INIS)

    Liu Zhengyi; Li Yongli; Chen Jinrong; Shen Chaiqing; Li Jun; Guo Xiuying

    1995-05-01

    On the basis of studying the concentration and dispersion characteristics of U, Au and Si in the granite area of Northern Guangdong and Southern Jiangxi in combination with the model experiments of magmatic and hydrothermal systems, the spatial distribution of U, Au and Si, the environment of the formation for U-productive and auriferous granitic bodies and migration characteristics of U, Au and Si during magmatic and hydrothermal stages, the relationship between uranium, gold and pyrite, are briefly described. The metallogenic prediction is also given. The research achievements provided important reference for the second-round U-prospecting in the South China and Au-prospecting in the U-productive areas. This approach of research method of self-proposing hypotheses combined with model experiments is first used in the research domain of uranium geology. (1 fig., 2 tabs.)

  9. Structure and crystallization of SiO2 and B2O3 doped lithium disilicate glasses from theory and experiment.

    Science.gov (United States)

    Erlebach, Andreas; Thieme, Katrin; Sierka, Marek; Rüssel, Christian

    2017-09-27

    Solid solutions of SiO 2 and B 2 O 3 in Li 2 O·2SiO 2 are synthesized and characterized for the first time. Their structure and crystallization mechanisms are investigated employing a combination of simulations at the density functional theory level and experiments on the crystallization of SiO 2 and B 2 O 3 doped lithium disilicate glasses. The remarkable agreement of calculated and experimentally determined cell parameters reveals the preferential, kinetically controlled incorporation of [SiO 4 ] and [BO 4 ] at the Li + lattice sites of the Li 2 O·2SiO 2 crystal structure. While the addition of SiO 2 increases the glass viscosity resulting in lower crystal growth velocities, glasses containing B 2 O 3 show a reduction of both viscosities and crystal growth velocities. These observations could be rationalized by a change of the chemical composition of the glass matrix surrounding the precipitated crystal phase during the course of crystallization, which leads to a deceleration of the attachment of building units required for further crystal growth at the liquid-crystal interface.

  10. Numerical studies and metric development for validation of magnetohydrodynamic models on the HIT-SI experiment

    Energy Technology Data Exchange (ETDEWEB)

    Hansen, C., E-mail: hansec@uw.edu [PSI-Center, University of Washington, Seattle, Washington 98195 (United States); Columbia University, New York, New York 10027 (United States); Victor, B.; Morgan, K.; Hossack, A.; Sutherland, D. [HIT-SI Group, University of Washington, Seattle, Washington 98195 (United States); Jarboe, T.; Nelson, B. A. [HIT-SI Group, University of Washington, Seattle, Washington 98195 (United States); PSI-Center, University of Washington, Seattle, Washington 98195 (United States); Marklin, G. [PSI-Center, University of Washington, Seattle, Washington 98195 (United States)

    2015-05-15

    We present application of three scalar metrics derived from the Biorthogonal Decomposition (BD) technique to evaluate the level of agreement between macroscopic plasma dynamics in different data sets. BD decomposes large data sets, as produced by distributed diagnostic arrays, into principal mode structures without assumptions on spatial or temporal structure. These metrics have been applied to validation of the Hall-MHD model using experimental data from the Helicity Injected Torus with Steady Inductive helicity injection experiment. Each metric provides a measure of correlation between mode structures extracted from experimental data and simulations for an array of 192 surface-mounted magnetic probes. Numerical validation studies have been performed using the NIMROD code, where the injectors are modeled as boundary conditions on the flux conserver, and the PSI-TET code, where the entire plasma volume is treated. Initial results from a comprehensive validation study of high performance operation with different injector frequencies are presented, illustrating application of the BD method. Using a simplified (constant, uniform density and temperature) Hall-MHD model, simulation results agree with experimental observation for two of the three defined metrics when the injectors are driven with a frequency of 14.5 kHz.

  11. The Si Huan Playgroup: An Initiative to Provide Non-Formal Early Childhood Education Experiences to Children of Migrants in Beijing

    Science.gov (United States)

    Nyland, Berenice; Nyland, Chris; Gao, Yang; Ng, Josephine; Zeng, Xiaodong

    2016-01-01

    This paper is about an experiment in non-formal early childhood education for migrant children in Beijing. The Si Huan Playgroup was set up by a group of volunteers in 2004 and is built on ideas of early childhood pedagogy, equity, life-long learning and non-formal education. Non-formal education has implications for policy makers as this is a…

  12. SQ-SQ Experiment for Determination of Relative Signs of Small nJ(29Si,13C) Couplings in a Wide Variety of Silicon Compounds

    Czech Academy of Sciences Publication Activity Database

    Blechta, Vratislav; Schraml, Jan

    2009-01-01

    Roč. 47, č. 12 (2009), s. 1019-1023 ISSN 0749-1581 R&D Projects: GA AV ČR IAA400720706 Institutional research plan: CEZ:AV0Z40720504 Keywords : DQ-ZQ experiment * nJ(Si,C) * signs of coupling constants Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.612, year: 2009

  13. Combining today's technologies provides for comprehensive management of volt/VAr assets

    Energy Technology Data Exchange (ETDEWEB)

    Dixon, M. [Beckwith Electric Co., Largo, FL (United States)

    2002-08-01

    Integration, automation and savvy planning are required in today's electric utility industry for the optimization of the distribution Volt/voltage adjusting rheostat (VAr) assets. Distributed intelligence should be considered. The basis of an automation platform for control of voltage and VAr assets at the local level is created by intelligence at the site of the control. The capabilities of the communication media to be used are to be thoroughly investigated when remote bypass or override of the local control is being implemented, preferring a very robust common public carrier network for infrastructure or the utility-owned private network. Such situations would occur in the case of voltage collapse, changes to system field assets after circuit switching when local intelligence needs to move faster, and transmission side support. A good centralized VAr dispatch program can be difficult to select, and the basis should be accurate measurement of system-wide parameters at all strategic locations throughout the distribution system. The minimum to be included is as follows: substation bus voltages and currents, feeder head voltages and currents, substation breaker status, transformer loading, voltages from as far along radial feeders as can be read, end of line voltages, and direction of power flow. The advantages of this optimization are the reduction of system losses, lower operating costs, an improvement of the power quality and the bottom-line profitability. 1 fig.

  14. Inspection of SiC{sub f}/SiC ceramic matrix composite specimens employed for fatigue experiments via laboratory X-ray computed microtomography

    Energy Technology Data Exchange (ETDEWEB)

    Quiney, Z.; Bache, M.R.; Jones, J.P. [Swansea Univ. (United Kingdom). Inst. of Structural Materials

    2015-07-01

    Hi-Nicalon SiC{sub f}/SiC ceramic matrix composite (CMC) specimens have been inspected using laboratory based X-ray computed micro-tomography (μCT) both prior and subsequent to isothermal fatigue assessment. The fatigue specimens were in the form of a dog bone-shaped geometry with a minimum cross-sectional area of 40 mm{sup 2}. Pre-test μCT inspections were conducted to identify the subsurface composite architecture and locate associated features introduced during the manufacturing process (e.g. isolated or conjoined porosity, matrix or interface discontinuities etc.). These μCT scans were subsequently correlated with matching post-test volumes in an attempt to determine the influence of such features upon damage accumulation and the ultimate failure position and cyclic damage mode(s). The relationship between μCT scan resolution and identification of critical features is also discussed. In typical cone-beam X-ray systems, resolution is proportional to the source-to-specimen distance, but for efficiency may also be chosen so as to minimise the number of scans needed to capture the whole area of interest. The investigations are intended to provide input into the future development of an in situ mechanical testing μCT facility using lab-based X-ray systems.

  15. Design of experiment approach for sintering study of nanocrystalline SiC fabricated using plasma pressure compaction

    Directory of Open Access Journals (Sweden)

    Bothara M.G.

    2009-01-01

    Full Text Available Plasma pressure compaction (P2C is a novel sintering technique that enables the consolidation of silicon carbide with a nanoscale microstructure at a relatively low temperature. To achieve a high final density with optimized mechanical properties, the effects of various sintering factors pertaining to the temperature-time profile and pressure were characterized. This paper reports a design of experiment approach used to optimize the processing for a 100 nm SiC powder focused on four sintering factors: temperature, time, pressure, and heating rate. Response variables included the density and mechanical properties. A L9 orthogonal array approach that includes the signal-to-noise (S/N ratio and analysis of variance (ANOVA was employed to optimize the processing factors. All of the sintering factors have significant effect on the density and mechanical properties. A final density of 98.1% was achieved with a temperature of 1600°C, hold time of 30 min, pressure of 50 MPa, and heating rate of 100°C/min. The hardness reached 18.4 GPa with a fracture toughness of 4.6 MPa√m, and these are comparable to reports from prior studies using higher consolidation temperatures.

  16. Monte-Carlo-calculations for the simulation of channelling-experiments with V3Si-single-crystals

    International Nuclear Information System (INIS)

    Kaufmann, R.

    1978-05-01

    The results of channelling-investigations on single-crystals of A15-type structure, like e.g. V 3 Si, are not directly comparable to analytical model-calculations. Therefore the channelling-process was simulated in a Monte-Carlo-program on the basis of the binary-collision-model. The calculated values for the minimum yield, Chisub(min), and the critical angle, Psisub(1/2), were in good agreement with the results of experiments with 2 MeV- 4 He + -particles. The lattice damage in the range of 2,000 Angstroem at the surface after an irradiation with a fluence of 6 x 10 16 - 4 He + /cm 2 at 300 KeV could be explained by normally distributed static displacements of the V-atoms with a mean value of 0.05 A. The transverse damage structure after an irradiation with a fluence of 1.5 x 10 16 - 4 He + /cm 2 at 50 KeV could be simulated by a step profile of 50% displacements of the V-atoms with a maximum value of 0.5 Angstroem at the depth of the projected range. (orig./HPOE) [de

  17. The effect of dielectric constants on noble metal/semiconductor SERS enhancement: FDTD simulation and experiment validation of Ag/Ge and Ag/Si substrates.

    Science.gov (United States)

    Wang, Tao; Zhang, Zhaoshun; Liao, Fan; Cai, Qian; Li, Yanqing; Lee, Shuit-Tong; Shao, Mingwang

    2014-02-11

    The finite-difference time-domain (FDTD) method was employed to simulate the electric field distribution for noble metal (Au or Ag)/semiconductor (Ge or Si) substrates. The simulation showed that noble metal/Ge had stronger SERS enhancement than noble metal/Si, which was mainly attributed to the different dielectric constants of semiconductors. In order to verify the simulation, Ag nanoparticles with the diameter of ca. 40 nm were grown on Ge or Si wafer (Ag/Ge or Ag/Si) and employed as surface-enhanced Raman scattering substrates to detect analytes in solution. The experiment demonstrated that both the two substrates exhibited excellent performance in the low concentration detection of Rhodamine 6G. Besides, the enhancement factor (1.3 × 10(9)) and relative standard deviation values (less than 11%) of Ag/Ge substrate were both better than those of Ag/Si (2.9 × 10(7) and less than 15%, respectively), which was consistent with the FDTD simulation. Moreover, Ag nanoparticles were grown in-situ on Ge substrate, which kept the nanoparticles from aggregation in the detection. To data, Ag/Ge substrates showed the best performance for their sensitivity and uniformity among the noble metal/semiconductor ones.

  18. Conveyor Performance based on Motor DC 12 Volt Eg-530ad-2f using K-Means Clustering

    Science.gov (United States)

    Arifin, Zaenal; Artini, Sri DP; Much Ibnu Subroto, Imam

    2017-04-01

    To produce goods in industry, a controlled tool to improve production is required. Separation process has become a part of production process. Separation process is carried out based on certain criteria to get optimum result. By knowing the characteristics performance of a controlled tools in separation process the optimum results is also possible to be obtained. Clustering analysis is popular method for clustering data into smaller segments. Clustering analysis is useful to divide a group of object into a k-group in which the member value of the group is homogeny or similar. Similarity in the group is set based on certain criteria. The work in this paper based on K-Means method to conduct clustering of loading in the performance of a conveyor driven by a dc motor 12 volt eg-530-2f. This technique gives a complete clustering data for a prototype of conveyor driven by dc motor to separate goods in term of height. The parameters involved are voltage, current, time of travelling. These parameters give two clusters namely optimal cluster with center of cluster 10.50 volt, 0.3 Ampere, 10.58 second, and unoptimal cluster with center of cluster 10.88 volt, 0.28 Ampere and 40.43 second.

  19. The evolution of amorphous grain boundaries during in-situ heating experiments in Lu-Mg doped Si3N4

    International Nuclear Information System (INIS)

    Bhattacharyya, Somnath; Subramaniam, Anandh; Koch, Christoph T.; Cannon, Rowland M.; Ruehle, Manfred

    2006-01-01

    The presence of 1-2 nm wide intergranular glassy films (IGFs) found in ceramics such as Si 3 N 4 and SiC strongly influences the properties of the material, including its fracture and creep behaviour. It is therefore important to know the evolution of the film as a function of temperature. Experiments, wherein liquid phase sintered Si 3 N 4 samples were quenched from high temperatures, have been carried out before and shown intriguing results. In the current investigation, in-situ heating experiments have been conducted in 120 kV and 400 kV microscopes, in order to separate beam irradiation from temperature effects. Based on the literature, it was expected that no changes would occur to the IGF below 1000 deg. C. However, it was surprising to note that the thickness measured at 950 deg. C was higher than that at room temperature. The correlation in trends observed in both microscopes shows that electron radiation has a minimal contribution to the change in IGF width at 950 deg. C. No change to the thickness was observed when heating up to 650 deg. C. After cooling back to room temperature there is a reduction in the thickness and thus a tendency to regain the original value of the thickness before heating. We conclude from these observations that certain material transport processes could be active at rather low temperatures (for Si 3 N 4 ). Possible mechanisms and sources of artifacts are also discussed

  20. Mega-electron-volt ion beam induced anisotropic plasmon resonance of silver nanocrystals in glass

    NARCIS (Netherlands)

    Penninkhof, JJ; Polman, A; Sweatlock, LA; Maier, SA; Atwater, HA; Vredenberg, AM; Kooi, BJ; Sweatlock, Luke A.; Maier, Stefan A.

    2003-01-01

    30 MeV Si ion beam irradiation of silica glass containing Ag nanocrystals causes alignment of Ag nanocrystals in arrays along the ion tracks. Optical transmission measurements show a large splitting of the surface plasmon resonance bands for polarizations longitudinal and transversal to the arrays.

  1. FOREWORD: VI Workshop in Electron Volt Neutron Spectroscopy: Frontiers and Horizons

    Science.gov (United States)

    Seel, A. G.; Senesi, R.; Fernandez-Alonso, F.

    2014-12-01

    January 2014 saw the congregation in Abingdon (UK) of scientists from across the world, to discuss the current state and future of spectroscopy using epithermal neutrons. This meeting was the sixth in a series of workshops held in collaboration between the Science and Technology Facilities Council (UK) and the Consiglio Nazionale delle Ricerche (Italy), aimed at bringing together researchers with an interest in the use of electron-volt neutrons in spectroscopic studies [1]. This technique is termed Deep Inelastic Neutron Scattering (DINS), and also Neutron Compton Scattering (NCS) in reference to the analogy with Compton scattering of X-rays from electrons. In particular, this meeting centred jointly around experimentalists and theoreticians, formulating animated discussions as to the current overview of DINS and future horizons facing the field. The use of electron Volt neutrons for spectroscopic measurements dates back to the advent of proton-driven spallation neutron sources in the 1970s and 1980s. Following an initial scientific meeting in Los Alamos (USA) [2], the first two meetings in this series were held in Abingdon (UK) in 1995 and 1998, with subsequent meetings held in Santa Fe (USA) in 2005 [3], Oak Ridge National Laboratory (USA) in 2006 [4], and Rome, Italy; in 2010 [5]. The flagship instrument serving a continual user-programme for DINS measurements, and the main focus of this meeting, has been the VESUVIO spectrometer at ISIS [6, 7]. Subsequent instruments like SEQUOIA in the USA [8, 9] and a newer spectrometer in the Bariloche LINAC in Argentina [10, 11] have also been commissioned and began serving a growing user community. The availability of DINS measurements has extended the range of possible spectroscopic techniques that utilise neutrons into the kinematic region of high energy and momentum transfers, shown schematically in Figure 1. Spectroscopic instrument suites such as that of ISIS are thus able to probe processes on timescales across nine

  2. Two-fluid (plasma-neutral) Extended-MHD simulations of spheromak configurations in the HIT-SI experiment with PSI-Tet

    Science.gov (United States)

    Sutherland, D. A.; Hansen, C. J.; Jarboe, T. R.

    2017-10-01

    A self-consistent, two-fluid (plasma-neutral) dynamic neutral model has been implemented into the 3-D, Extended-MHD code PSI-Tet. A monatomic, hydrogenic neutral fluid reacts with a plasma fluid through elastic scattering collisions and three inelastic collision reactions: electron-impact ionization, radiative recombination, and resonant charge-exchange. Density, momentum, and energy are evolved for both the plasma and neutral species. The implemented plasma-neutral model in PSI-Tet is being used to simulate decaying spheromak configurations in the HIT-SI experimental geometry, which is being compare to two-photon absorption laser induced fluorescence measurements (TALIF) made on the HIT-SI3 experiment. TALIF is used to measure the absolute density and temperature of monatomic deuterium atoms. Neutral densities on the order of 1015 m-3 and neutral temperatures between 0.6-1.7 eV were measured towards the end of decay of spheromak configurations with initial toroidal currents between 10-12 kA. Validation results between TALIF measurements and PSI-Tet simulations with the implemented dynamic neutral model will be presented. Additionally, preliminary dynamic neutral simulations of the HIT-SI/HIT-SI3 spheromak plasmas sustained with inductive helicity injection will be presented. Lastly, potential benefits of an expansion of the two-fluid model into a multi-fluid model that includes multiple neutral species and tracking of charge states will be discussed.

  3. Photovoltaic Impact Assessment of Smart Inverter Volt-VAR Control on Distribution System Conservation Voltage Reduction and Power Quality

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Fei [National Renewable Energy Lab. (NREL), Golden, CO (United States); Nagarajan, Adarsh [National Renewable Energy Lab. (NREL), Golden, CO (United States); Chakraborty, Sudipta [National Renewable Energy Lab. (NREL), Golden, CO (United States); Baggu, Murali [National Renewable Energy Lab. (NREL), Golden, CO (United States); Nguyen, Andu [SolarCity, San Mateo, CA (United States); Walinga, Sarah [SolarCity, San Mateo, CA (United States); McCarty, Michael [SolarCity, San Mateo, CA (United States); Bell, Frances [SolarCity, San Mateo, CA (United States)

    2016-12-01

    This report presents an impact assessment study of distributed photovoltaic (PV) with smart inverter Volt-VAR control on conservation voltage reduction (CVR) energy savings and distribution system power quality. CVR is a methodology of flattening and lowering a distribution system voltage profile in order to conserve energy. Traditional CVR relies on operating utility voltage regulators and switched capacitors. However, with the increased penetration of distributed PV systems, smart inverters provide the new opportunity to control local voltage and power factor by regulating the reactive power output, leading to a potential increase in CVR energy savings. This report proposes a methodology to implement CVR scheme by operating voltage regulators, capacitors, and autonomous smart inverter Volt-VAR control in order to achieve increased CVR benefit. Power quality is an important consideration when operating a distribution system, especially when implementing CVR. It is easy to measure the individual components that make up power quality, but a comprehensive method to incorporate all of these values into a single score has yet to be undertaken. As a result, this report proposes a power quality scoring mechanism to measure the relative power quality of distribution systems using a single number, which is aptly named the 'power quality score' (PQS). Both the CVR and PQS methodologies were applied to two distribution system models, one obtained from the Hawaiian Electric Company (HECO) and another obtained from Pacific Gas and Electric (PG&E). These two models were converted to the OpenDSS platform using previous model conversion tools that were developed by NREL. Multiple scenarios including various PV penetration levels and smart inverter densities were simulated to analyze the impact of smart inverter Volt-VAR support on CVR energy savings and feeder power quality. In order to analyze the CVR benefit and PQS, an annual simulation was conducted for each

  4. Causal Analysis of the Inadvertent Contact with an Uncontrolled Electrical Hazardous Energy Source (120 Volts AC)

    Energy Technology Data Exchange (ETDEWEB)

    David E. James; Dennis E. Raunig; Sean S. Cunningham

    2014-10-01

    On September 25, 2013, a Health Physics Technician (HPT) was performing preparations to support a pneumatic transfer from the HFEF Decon Cell to the Room 130 Glovebox in HFEF, per HFEF OI 3165 section 3.5, Field Preparations. This activity involves an HPT setting up and climbing a portable ladder to remove the 14-C meter probe from above ball valve HBV-7. The HPT source checks the meter and probe and then replaces the probe above HBV-7, which is located above Hood ID# 130 HP. At approximately 13:20, while reaching past the HBV-7 valve position indicator switches in an attempt to place the 14-C meter probe in the desired location, the HPT’s left forearm came in contact with one of the three sets of exposed terminals on the valve position indication switches for HBV 7. This resulted in the HPT receiving an electrical shock from a 120 Volt AC source. Upon moving the arm, following the electrical shock, the HPT noticed two exposed electrical connections on a switch. The HPT then notified the HFEF HPT Supervisor, who in turn notified the MFC Radiological Controls Manager and HFEF Operations Manager of the situation. Work was stopped in the area and the hazard was roped off and posted to prevent access to the hazard. The HPT was escorted by the HPT Supervisor to the MFC Dispensary and then preceded to CFA medical for further evaluation. The individual was evaluated and released without any medical restrictions. Causal Factor (Root Cause) A3B3C01/A5B2C08: - Knowledge based error/Attention was given to wrong issues - Written Communication content LTA, Incomplete/situation not covered The Causal Factor (root cause) was attention being given to the wrong issues during the creation, reviews, verifications, and actual performance of HFEF OI-3165, which covers the need to perform the weekly source check and ensure placement of the probe prior to performing a “rabbit” transfer. This resulted in the hazard not being identified and mitigated in the procedure. Work activities

  5. Design and characterization of the SiPM tracking system of NEXT-DEMO, a demonstrator prototype of the NEXT-100 experiment

    International Nuclear Information System (INIS)

    Álvarez, V; Ball, M; Cárcel, S; Cervera, A; Díaz, J; Ferrario, P; Borges, F I G; Conde, C A N; Dias, T H V T; Fernandes, L M P; Freitas, E D C; Garcia, A N C; Castel, J; Cebrián, S; Dafni, T; Egorov, M; Gehman, V M; Esteve, R; Evtoukhovitch, P; Ferreira, A L

    2013-01-01

    NEXT-100 experiment aims at searching the neutrinoless double-beta decay of the 136 Xe isotope using a TPC filled with a 100 kg of high-pressure gaseous xenon, with 90% isotopic enrichment. The experiment will take place at the Laboratorio Subterr and apos;aneo de Canfranc (LSC), Spain. NEXT-100 uses electroluminescence (EL) technology for energy measurement with a resolution better than 1% FWHM. The gaseous xenon in the TPC additionally allows the tracks of the two beta particles to be recorded, which are expected to have a length of up to 30 cm at 10 bar pressure. The ability to record the topological signature of the ββ0ν events provides a powerful background rejection factor for the ββ experiment. In this paper, we present a novel 3D imaging concept using SiPMs coated with tetraphenyl butadiene (TPB) for the EL read out and its first implementation in NEXT-DEMO, a large-scale prototype of the NEXT-100 experiment. The design and the first characterization measurements of the NEXT-DEMO SiPM tracking system are presented. The SiPM response uniformity over the tracking plane drawn from its gain map is shown to be better than 4%. An automated active control system for the stabilization of the SiPMs gain was developed, based on the voltage supply compensation of the gain drifts. The gain is shown to be stabilized within 0.2% relative variation around its nominal value, provided by Hamamatsu, in a temperature range of 10°C. The noise level from the electronics and the SiPM dark noise is shown to lay typically below the level of 10 photoelectrons (pe) in the ADC. Hence, a detection threshold at 10 pe is set for the acquisition of the tracking signals. The ADC full dynamic range (4096 channels) is shown to be adequate for signal levels of up to 200 pe/μs, which enables recording most of the tracking signals.

  6. Pirata de si: viagem aos mares da memória e experiências de Paulo Freire

    Directory of Open Access Journals (Sweden)

    Ana Paula Marinho de Lima

    2018-04-01

    memory is inseparable from collective memory, the reading and analysis of Freire’s works gave us the possibility to go through several moments of his sometimes personal sometimes professional and political experiences, as well as led us to understand, through the intimacy of his memories, facts that composed Brazil’s political history. Keywords: Paulo Freire; Memory; Experience.   Pirata de si: viaje a los mares de la memoria y experiencias de Paulo Freire RESUMEN En este artículo, tenemos como objetivo comprender los relatos autobiográficos de Paulo Freire en dos de los llamados ‘libros dialogados’ de ese educador con la colaboración de Sérgio Guimarães: ‘Aprendiendo con la propia historia I’ (2010 y ‘Aprendiendo con la propia historia II’ (2002. Ambas hacen una incursión a la trayectoria de vida del educador pernambucano, remitiéndonos a conocer cómo Freire reflexiona acerca de momentos significativos de su vida. Por lo tanto, cuanto al tipo de procedimiento de recogida de datos, la investigación se clasifica como bibliográfica; y en lo que se respecta a la naturaleza de dichos datos, es una investigación cualitativa, ya que analiza significados, motivos, anhelos, valores y actitudes. Considerando que la memoria individual es inseparable de la colectiva, las lecturas y análisis de las obras nos posibilitaron un tránsito por varios momentos de las experiencias, sea personales y políticas de Paulo Freire, así como nos llevan a comprender, por medio de la intimidad de sus memorias, hechos que compusieron la historia política brasileña. Palabras-clave: Paulo Freire; Memoria; Experiencia.

  7. A new HBMO algorithm for multiobjective daily Volt/Var control in distribution systems considering Distributed Generators

    Energy Technology Data Exchange (ETDEWEB)

    Niknam, Taher [Electrical and Electronics Engineering Department, Shiraz University of Technology, Modars Blvd. P.O. 71555-313, Shiraz (Iran, Islamic Republic of)

    2011-03-15

    In recent years, Distributed Generators (DGs) connected to the distribution network have received increasing attention. The connection of enormous DGs into existing distribution network changes the operation of distribution systems. Because of the small X/R ratio and radial structure of distribution systems, DGs affect the daily Volt/Var control. This paper presents a new algorithm for multiobjective daily Volt/Var control in distribution systems including Distributed Generators (DGs). The objectives are costs of energy generation by DGs and distribution companies, electrical energy losses and the voltage deviations for the next day. A new optimization algorithm based on a Chaotic Improved Honey Bee Mating Optimization (CIHBMO) is proposed to determine the active power values of DGs, reactive power values of capacitors and tap positions of transformers for the next day. Since objectives are not the same, a fuzzy system is used to calculate the best solution. The plausibility of the proposed algorithm is demonstrated and its performance is compared with other methods on a 69-bus distribution feeder. Simulation results illustrate that the proposed algorithm has better outperforms the other algorithms. (author)

  8. A new HBMO algorithm for multiobjective daily Volt/Var control in distribution systems considering Distributed Generators

    International Nuclear Information System (INIS)

    Niknam, Taher

    2011-01-01

    In recent years, Distributed Generators (DGs) connected to the distribution network have received increasing attention. The connection of enormous DGs into existing distribution network changes the operation of distribution systems. Because of the small X/R ratio and radial structure of distribution systems, DGs affect the daily Volt/Var control. This paper presents a new algorithm for multiobjective daily Volt/Var control in distribution systems including Distributed Generators (DGs). The objectives are costs of energy generation by DGs and distribution companies, electrical energy losses and the voltage deviations for the next day. A new optimization algorithm based on a Chaotic Improved Honey Bee Mating Optimization (CIHBMO) is proposed to determine the active power values of DGs, reactive power values of capacitors and tap positions of transformers for the next day. Since objectives are not the same, a fuzzy system is used to calculate the best solution. The plausibility of the proposed algorithm is demonstrated and its performance is compared with other methods on a 69-bus distribution feeder. Simulation results illustrate that the proposed algorithm has better outperforms the other algorithms.

  9. Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures – theory and experiment

    Directory of Open Access Journals (Sweden)

    P. P. Paskov

    2017-09-01

    Full Text Available The effect of Si doping on the thermal conductivity of bulk GaN was studied both theoretically and experimentally. The thermal conductivity of samples grown by Hydride Phase Vapor Epitaxy (HVPE with Si concentration ranging from 1.6×1016 to 7×1018 cm-3 was measured at room temperature and above using the 3ω method. The room temperature thermal conductivity was found to decrease with increasing Si concentration. The highest value of 245±5 W/m.K measured for the undoped sample was consistent with the previously reported data for free-standing HVPE grown GaN. In all samples, the thermal conductivity decreased with increasing temperature. In our previous study, we found that the slope of the temperature dependence of the thermal conductivity gradually decreased with increasing Si doping. Additionally, at temperatures above 350 K the thermal conductivity in the highest doped sample (7×1018 cm-3 was higher than that of lower doped samples. In this work, a modified Callaway model adopted for n-type GaN at high temperatures was developed in order to explain such unusual behavior. The experimental data was analyzed with examination of the contributions of all relevant phonon scattering processes. A reasonable match between the measured and theoretically predicted thermal conductivity was obtained. It was found that in n-type GaN with low dislocation densities the phonon-free-electron scattering becomes an important resistive process at higher temperatures. At the highest free electron concentrations, the electronic thermal conductivity was suggested to play a role in addition to the lattice thermal conductivity and compete with the effect of the phonon-point-defect and phonon-free-electron scattering.

  10. Da Vinci Xi and Si platforms have equivalent perioperative outcomes during robot-assisted partial nephrectomy: preliminary experience.

    Science.gov (United States)

    Abdel Raheem, Ali; Sheikh, Abulhasan; Kim, Dae Keun; Alatawi, Atalla; Alabdulaali, Ibrahim; Han, Woong Kyu; Choi, Young Deuk; Rha, Koon Ho

    2017-03-01

    The aims of this study were to compare the perioperative outcomes of da Vinci Xi to Si during robotic-assisted partial nephrectomy (RAPN) and to discuss the feasibility of our novel port placement scheme for the da Vinci Xi platform, to overcome the existing kinetic and technical difficulties we faced with the linear port placement in patients with a small body habitus. A retrospective data analysis of patients who underwent RPN using da Vinci Xi (n = 18) was carried out. The outcomes of the Xi group were compared with the Si group (n = 18) selected using a case-matched methodology. For da Vinci Xi, we applied the universal linear port placement in 12 patients and our modified port placement in the remaining 6 patients. The Xi group had a shorter mean docking time of 17.8 ± 2.6 min compared to the Si group of 20.5 ± 2.1 min (p = 0.002); otherwise, no significant difference was present with regard to the remaining perioperative variables (p > 0.05). The modified Xi port placement had a shorter mean console time of 70.8 ± 9.7 min compared to the universal linear port placement of 89.3 ± 17.2 min (p = 0.03). Moreover, it provided a broader field of vision with excellent robotic arms movement, minimizing collisions and allowing an easier and comfortable surgical assist. Da Vinci Xi appears to be feasible and safe during RPN with similar outcomes to Si. The novel Xi port placement makes surgery easier in patients with low BMI.

  11. Simulation of injector dynamics during steady inductive helicity injection current drive in the HIT-SI experiment

    Energy Technology Data Exchange (ETDEWEB)

    Hansen, C., E-mail: hansec@uw.edu [PSI-Center, University of Washington, Seattle, Washington 98195 (United States); Columbia University, New York, New York 10027 (United States); Marklin, G. [PSI-Center, University of Washington, Seattle, Washington 98195 (United States); Victor, B. [HIT-SI Group, University of Washington, Seattle, Washington 98195 (United States); Akcay, C. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Jarboe, T. [HIT-SI Group, University of Washington, Seattle, Washington 98195 (United States); PSI-Center, University of Washington, Seattle, Washington 98195 (United States)

    2015-04-15

    We present simulations of inductive helicity injection in the Helicity Injected Torus with Steady Inductive helicity injection (HIT-SI) device that treats the entire plasma volume in a single dynamic MHD model. A new fully 3D numerical tool, the PSI-center TETrahedral mesh code, was developed that provides the geometric flexibility required for this investigation. Implementation of a zero-β Hall MHD model using PSI-TET will be presented including formulation of a new self-consistent magnetic boundary condition for the wall of the HIT-SI device. Results from simulations of HIT-SI are presented focusing on injector dynamics that are investigated numerically for the first time. Asymmetries in the plasma loading between the two helicity injectors and progression of field reversal in each injector are observed. Analysis indicates cross-coupling between injectors through confinement volume structures. Injector impedance is found to scale with toroidal current at fixed density, consistent with experimental observation. Comparison to experimental data with an injector drive frequency of 14.5 kHz shows good agreement with magnetic diagnostics. Global mode structures from Bi-Orthogonal decomposition agree well with experimental data for the first four modes.

  12. The Experiment Production And Examination Of The U3Si2-AI Mini plates For Irradiation Test

    International Nuclear Information System (INIS)

    Supardjo; Boybul; Yowono; Susworo; Permana, S.

    1998-01-01

    The fuel plates containing U 3 Si 2 -AI dispersion fuel having respective loading of 3.55; 4.20; and 4.80 g/cm 3 were prepared by dispersing certain amount of U 3 Si 2 powder in the AI powder as matrix. The weight ratio of U 3 Si 2 and AI at different loading was chosen based on the 19.23 cm 3 volume basis fuel core calculation. Each fuel mixture was pressed into a fuel core having dimension of 100.20 x 60.35 x 3.15 +- (0.05) mm, which was then cut into mini fuel core having dimension of 16 x 8 x 3.15 +- (0.05) mm. The mini plates were prepared by picture and frame technique using AIMg2 as cladding material. The mini plates have been tested for blister, homogeneity, white spots, surface defects and their cladding thickness, revealing that out of 74 mini plates, they are ten (10) mini plates that have to be rejected due to blisters and white spots, thus of 64 mini plates can be further fabricated as samples for irradiation test

  13. Inequalities of caries experience in Nevada youth expressed by DMFT index vs. Significant Caries Index (SiC) over time.

    Science.gov (United States)

    Ditmyer, Marcia; Dounis, Georgia; Mobley, Connie; Schwarz, Eli

    2011-04-05

    With the increasingly polarized distribution of dental caries among children and adolescents, the usual DMFT measure has become a less meaningful population descriptor. To re-focus on identifying the high caries prevalence group the Significant Caries Index (SiC) was created. The aims of this study were to analyze the prevalence and severity of dental caries in Nevada youth over a period of eight years and to compare its expression by means of DMFT and SiC; analyze the caries trends in the population and their underlying factors, and determine whether Nevada youth were at risk for significantly high levels of dental caries. Retrospective data was analyzed from a series of sequential, standardized oral health surveys across eight years (2001/2002-2008/2009) that included over 62,000 examinations of adolescents 13-19 years of age, attending public/private Nevada schools. Mean Decayed-Missing-Filled Teeth index (DMFT) and Significant Caries Index (SiC) were subsequently computed for each academic year. Descriptive statistics were reported for analysis of comparative DMFT and SiC scores in relation to age, gender, racial background, and residence in a fluoridated/non-fluoridated community. Logistic regression analysis was used to analyze the differential impact of the variables on the probability of being in the high caries prevalence group. Comparison of students' mean DMFT to National (NHANES) data confirmed that dental caries remains a common chronic disease among Nevada youth, presenting higher prevalence rates and greater mean scores than the national averages. Downward trends were found across all demographics compared between survey years 1 and 6 with the exception of survey year 3. An upward trend began in survey year six. Over time, the younger group displayed an increasing proportion of caries free individuals while a decreasing proportion was found among older examinees. As expected, the mean SiC score was significantly higher than DMFT scores within each

  14. Inequalities of caries experience in Nevada youth expressed by DMFT index vs. Significant Caries Index (SiC over time

    Directory of Open Access Journals (Sweden)

    Mobley Connie

    2011-04-01

    Full Text Available Abstract Background With the increasingly polarized distribution of dental caries among children and adolescents, the usual DMFT measure has become a less meaningful population descriptor. To re-focus on identifying the high caries prevalence group the Significant Caries Index (SiC was created. The aims of this study were to analyze the prevalence and severity of dental caries in Nevada youth over a period of eight years and to compare its expression by means of DMFT and SiC; analyze the caries trends in the population and their underlying factors, and determine whether Nevada youth were at risk for significantly high levels of dental caries. Methods Retrospective data was analyzed from a series of sequential, standardized oral health surveys across eight years (2001/2002-2008/2009 that included over 62,000 examinations of adolescents 13-19 years of age, attending public/private Nevada schools. Mean Decayed-Missing-Filled Teeth index (DMFT and Significant Caries Index (SiC were subsequently computed for each academic year. Descriptive statistics were reported for analysis of comparative DMFT and SiC scores in relation to age, gender, racial background, and residence in a fluoridated/non-fluoridated community. Logistic regression analysis was used to analyze the differential impact of the variables on the probability of being in the high caries prevalence group. Results Comparison of students' mean DMFT to National (NHANES data confirmed that dental caries remains a common chronic disease among Nevada youth, presenting higher prevalence rates and greater mean scores than the national averages. Downward trends were found across all demographics compared between survey years 1 and 6 with the exception of survey year 3. An upward trend began in survey year six. Over time, the younger group displayed an increasing proportion of cariesfree individuals while a decreasing proportion was found among older examinees. As expected, the mean SiC score was

  15. Application of volt-chins for determination of ionic components in real and chemical Gibbs transition energies of individual ions from water in aqueous-organic solvents

    International Nuclear Information System (INIS)

    Parfenyuk, V.I.

    2007-01-01

    Thermodynamic description of separate ions (among which is I - ) in individual and mixed solvents is conducted on the basis of the volt potential difference method. Application of the presented methodology serves as one of candidates problem solving of individual ions thermodynamic characterisation in solutions. Validity of application of the volt potential difference method for the determination of ionic components in real and chemical thermodynamic properties of separate ions in solutions as well as surface potential values on the solution-gas phase interfaces is demonstrated [ru

  16. Construction of the Al-Ni-Si phase diagram over the whole composition and temperature ranges: thermodynamic modeling supported by key experiments and first-principles calculations

    Energy Technology Data Exchange (ETDEWEB)

    Xiong Wei; Du Yong; Wang Jiong; Zhang Wei-Wei [State Key Lab. of Powder Metallurgy, Central South Univ., Changsha (China); Hu Rong-Xiang; Nash, P. [Thermal Processing Technology Center, Illinois Inst. of Tech., Chicago (United States); Lu Xiao-Gang [Thermo-Calc AB, Stockholm Technology Park, Stockholm (Sweden)

    2008-06-15

    An extensive thermodynamic investigation of the Al-Ni-Si system is carried out via an integrated approach of calculation of phase diagrams, first-principles calculations, and key experiments. Eighteen decisive alloys are prepared in order to verify the existence of the previously reported ternary compounds and to provide new phase equilibrium data. Phase compositions, microstructure, and phase transition temperatures are determined using the combined techniques of X-ray diffraction, scanning electron microscopy, energy dispersion X-ray analysis, and differential thermal analysis. The order/disorder transition between disordered bccA2 and ordered bccB2 phases as well as that between disordered fccA1 and ordered L1{sub 2} phase are described using a two-sublattice model. A self-consistent parameter set is finally obtained by considering the huge amount of experimental data including 13 vertical sections and 5 isothermal sections from both the literature and the present experiments. Almost all of the reliable phase diagram data can be well described by the present modeling. The reliability of the calculated thermodynamic properties for ternary phases is verified through enthalpy measurement employing drop calorimetry and first-principles calculations. The thermodynamic parameters obtained can also successfully predict most of the thermodynamic properties and describe the solidification path for the selected as-cast alloy Al{sub 6}Ni{sub 55}Si{sub 39}. (orig.)

  17. Investigation of creep threshold stresses using in situ TEM straining experiment in an Al-5Y2O3-10SiC composite

    International Nuclear Information System (INIS)

    Deshmukh, S.P.; Mishra, R.S.; Robertson, I.M.

    2010-01-01

    Creep behavior of metal matrix composites is similar to dispersion strengthen alloys and characterized by the presence of a threshold stress below which the creep rate is negligible. This threshold stress is attributed, at least in dispersion-strengthened alloys, to dislocation particle interactions in which the detachment of the dislocations from the particle is the rate-limiting step. Creep experiments were performed on an Al-5Y 2 O 3 -10SiC composite in the temperature range of 473 and 573 K and the nature of the dislocation-particle interaction was determined by performing in situ straining experiments at elevated temperature in a transmission electron microscope. The threshold stress and the detachment stress are temperature dependent and the detachment stress is less than the threshold stress emphasizing the contribution of load transfer from the matrix to the reinforcement phase.

  18. Two-photon LIF on the HIT-SI3 experiment: Absolute density and temperature measurements of deuterium neutrals

    Energy Technology Data Exchange (ETDEWEB)

    Elliott, Drew, E-mail: dbelliott@mix.wvu.edu; Siddiqui, Umair; Scime, Earl [Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26056 (United States); Sutherland, Derek; Everson, Chris; Morgan, Kyle; Hossack, Aaron; Nelson, Brian; Jarboe, Tom [Department of Aerospace Engineering, University of Washington, Seattle, Washington 98105 (United States)

    2016-11-15

    Two-photon laser-induced fluorescence measurements were performed on the helicity injected torus (HIT-SI3) device to determine the density and temperature of the background neutral deuterium population. Measurements were taken in 2 ms long pulsed plasmas after the inductive helicity injectors were turned off. Attempts to measure neutrals during the main phase of the plasma were unsuccessful, likely due to the density of neutrals being below the detection threshold of the diagnostic. An unexpectedly low density of atomic deuterium was measured in the afterglow; roughly 100 times lower than the theoretical prediction of 10{sup 17} m{sup −3}. The neutral temperatures measured were on the order of 1 eV. Temporally and spatially resolved neutral density and temperature data are presented.

  19. Numerical modeling of first experiments on PbLi MHD flows in a rectangular duct with foam-based SiC flow channel insert

    Energy Technology Data Exchange (ETDEWEB)

    Smolentsev, S., E-mail: sergey@fusion.ucla.edu [University of California, Los Angeles (United States); Courtessole, C.; Abdou, M.; Sharafat, S. [University of California, Los Angeles (United States); Sahu, S. [Institute of Plasma Research (India); Sketchley, T. [University of California, Los Angeles (United States)

    2016-10-15

    Highlights: • Numerical studies were performed as a pre-experimental analysis to the experiment on MHD PbLi flows in a rectangular duct with a flow channel insert (FCI). • Dynamic testing of foam-based SiC foam-based CVD coated FCI has been performed using MaPLE facility at UCLA. • Two physical models were proposed to explain the experimental results and 3D and 2D computations performed using COMSOL, HIMAG and UCLA codes. • The obtained results suggest that more work on FCI development, fabrication and testing has to be done to assure good hermetic properties before the implementation in a fusion device. - Abstract: A flow channel insert (FCI) is the key element of the DCLL blanket concept. The FCI serves as electrical and thermal insulator to reduce the MHD pressure drop and to decouple the temperature-limited ferritic structure from the flowing hot lead-lithium (PbLi) alloy. The main focus of the paper is on numerical computations to simulate MHD flows in the first experiments on PbLi flows in a stainless steel rectangular duct with a foam-based silicon carbide (SiC) FCI. A single uninterrupted long-term (∼6500 h) test has recently been performed on a CVD coated FCI sample in the flowing PbLi in a magnetic field up to 1.5 T at the PbLi temperature of 300 °C using the MaPLE loop at UCLA. An unexpectedly high MHD pressure drop measured in this experiment suggests that a PbLi ingress into the FCI occurred in the course of the experiment, resulting in degradation of electroinsulating FCI properties. The ingress through the protective CVD layer was further confirmed by the post-experimental microscopic analysis of the FCI. The numerical modeling included 2D and 3D computations using HIMAG, COMSOL and a UCLA research code to address important flow features associated with the FCI finite length, fringing magnetic field, rounded FCI corners and also to predict changes in the MHD pressure drop in the unwanted event of a PbLi ingress. Two physical

  20. Fermi Surfaces in the Antiferromagnetic, Paramagnetic and Polarized Paramagnetic States of CeRh2Si2 Compared with Quantum Oscillation Experiments

    Science.gov (United States)

    Pourret, Alexandre; Suzuki, Michi-To; Palaccio Morales, Alexandra; Seyfarth, Gabriel; Knebel, Georg; Aoki, Dai; Flouquet, Jacques

    2017-08-01

    The large quantum oscillations observed in the thermoelectric power in the antiferromagnetic (AF) state of the heavy-fermion compound CeRh2Si2 disappear suddenly when entering in the polarized paramagnetic (PPM) state at Hc ˜ 26.5 T, indicating an abrupt reconstruction of the Fermi surface. The electronic band structure was calculated using [LDA+U] for the AF state taking the correct magnetic structure into account, for the PPM state, and for the paramagnetic state (PM). Different Fermi surfaces were obtained for the AF, PM, and PPM states. Due to band folding, a large number of branches was expected and observed in the AF state. The LDA+U calculation was compared with the previous LDA calculations. Furthermore, we compared both calculations with previously published de Haas-van Alphen experiments. The better agreement with the LDA approach suggests that above the critical pressure pc CeRh2Si2 enters in a mixed-valence state. In the PPM state under a high magnetic field, the 4f contribution at the Fermi level EF drops significantly compared with that in the PM state, and the 4f electrons contribute only weakly to the Fermi surface in our approach.

  1. The MU-RAY experiment. An application of SiPM technology to the understanding of volcanic phenomena

    International Nuclear Information System (INIS)

    Anastasio, A.; Ambrosino, F.; Basta, D.; Bonechi, L.; Brianzi, M.; Bross, A.; Callier, S.; Cassese, F.; Castellini, G.; Ciaranfi, R.; Cimmino, L.; D'Alessandro, R.; De Fazio, B.; La Taille, C. de; Garufi, F.; Iacobucci, G.; Martini, M.; Masone, V.; Mattone, C.; Miyamoto, S.

    2013-01-01

    The purpose of the MU-RAY project is to develop an innovative approach to the study of volcanoes and their monitoring based on a particle physics approach. The test site is Vesuvio: one of the higher risk volcanoes in the world. In this context, muon radiography is an innovative method of enormous impact. This is an imaging technique which relies on the measurement, by means of a cosmic ray telescope, of the absorption in the volcano of muons with near-horizontal trajectories, produced by the interactions of cosmic rays with the atmosphere. Since 2003 this technique has been successfully used on volcanoes in Japan, providing pictures of their vertices with resolutions much better than those obtained with the traditional techniques based on gravimeters. Researchers from Naples and Florence are currently involved in the construction and testing of a prototype telescope based on the use of bars of plastic scintillator with a triangular section whose scintillation light is collected by special fibres (wave length shifters) and transported to SiPM (Silicon photomultipliers). A complete prototype telescope, consisting of three xy scintillation planes and 1 m 2 active area has been assembled and is now under test

  2. The MU-RAY experiment. An application of SiPM technology to the understanding of volcanic phenomena

    Energy Technology Data Exchange (ETDEWEB)

    Anastasio, A. [INFN-Napoli, Napoli (Italy); Ambrosino, F. [INFN-Napoli, Napoli (Italy); Università Federico II, Napoli (Italy); Basta, D. [INFN-Napoli, Napoli (Italy); Bonechi, L. [INFN-Firenze, Firenze (Italy); Università degli Studi di Firenze, Firenze (Italy); Brianzi, M. [Università degli Studi di Firenze, Firenze (Italy); Bross, A. [Fermilab (United States); Callier, S. [LAL, Orsay (France); Cassese, F. [INFN-Napoli, Napoli (Italy); Castellini, G. [CNR-IFAC, Firenze (Italy); Ciaranfi, R. [INFN-Firenze, Firenze (Italy); Cimmino, L. [Università Federico II, Napoli (Italy); D' Alessandro, R., E-mail: candi@fi.infn.it [INFN-Firenze, Firenze (Italy); Università degli Studi di Firenze, Firenze (Italy); De Fazio, B. [Università Federico II, Napoli (Italy); La Taille, C. de [LAL, Orsay (France); Garufi, F. [Università Federico II, Napoli (Italy); Iacobucci, G. [INFN-Napoli, Napoli (Italy); Martini, M. [INGV-Osservatorio Vesuviano, Napoli (Italy); Masone, V. [INFN-Napoli, Napoli (Italy); Mattone, C. [INFN-Napoli, Napoli (Italy); Università Federico II, Napoli (Italy); Miyamoto, S. [Earthquake Research Institute, The University of Tokyo (Japan); and others

    2013-08-01

    The purpose of the MU-RAY project is to develop an innovative approach to the study of volcanoes and their monitoring based on a particle physics approach. The test site is Vesuvio: one of the higher risk volcanoes in the world. In this context, muon radiography is an innovative method of enormous impact. This is an imaging technique which relies on the measurement, by means of a cosmic ray telescope, of the absorption in the volcano of muons with near-horizontal trajectories, produced by the interactions of cosmic rays with the atmosphere. Since 2003 this technique has been successfully used on volcanoes in Japan, providing pictures of their vertices with resolutions much better than those obtained with the traditional techniques based on gravimeters. Researchers from Naples and Florence are currently involved in the construction and testing of a prototype telescope based on the use of bars of plastic scintillator with a triangular section whose scintillation light is collected by special fibres (wave length shifters) and transported to SiPM (Silicon photomultipliers). A complete prototype telescope, consisting of three xy scintillation planes and 1 m{sup 2} active area has been assembled and is now under test.

  3. Modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy

    International Nuclear Information System (INIS)

    Wu Yuying; Liu Xiangfa; Jiang Binggang; Huang Chuanzhen

    2009-01-01

    Modification effect of Ni-38 wt.%Si on the Al-12 wt.%Si alloy has been studied by differential scanning calorimeter, torsional oscillation viscometer and liquid X-ray diffraction experiments. It is found that there is a modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy, i.e. primary Si can precipitate in the microstructure of Al-12 wt.%Si alloy when Ni and Si added in the form of Ni-38 wt.%Si, but not separately. Ni-38 wt.%Si alloy brings 'genetic materials' into the Al-Si melt, which makes the melt to form more ordering structure, promotes the primary Si precipitated. Moreover, the addition of Ni-38 wt.%Si, which decreases the solidification supercooling degree of Al-12 wt.%Si alloy, is identical to the effect of heterogeneous nuclei.

  4. Modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy

    Energy Technology Data Exchange (ETDEWEB)

    Wu Yuying [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China)], E-mail: wyy532001@163.com; Liu Xiangfa [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China); Shandong Binzhou Bohai Piston Co., Ltd., Binzhou 256602, Shandong (China); Jiang Binggang [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China); Huang Chuanzhen [School of Mechanical Engineering, Shandong University, Jinan 250061 (China)

    2009-05-27

    Modification effect of Ni-38 wt.%Si on the Al-12 wt.%Si alloy has been studied by differential scanning calorimeter, torsional oscillation viscometer and liquid X-ray diffraction experiments. It is found that there is a modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy, i.e. primary Si can precipitate in the microstructure of Al-12 wt.%Si alloy when Ni and Si added in the form of Ni-38 wt.%Si, but not separately. Ni-38 wt.%Si alloy brings 'genetic materials' into the Al-Si melt, which makes the melt to form more ordering structure, promotes the primary Si precipitated. Moreover, the addition of Ni-38 wt.%Si, which decreases the solidification supercooling degree of Al-12 wt.%Si alloy, is identical to the effect of heterogeneous nuclei.

  5. Growth of multilayered polycrystalline reaction rims in the MgO-SiO2 system, part I: experiments

    Science.gov (United States)

    Gardés, E.; Wunder, B.; Wirth, R.; Heinrich, W.

    2011-01-01

    Growth of transport-controlled reaction layers between single crystals of periclase and quartz, and forsterite and quartz was investigated experimentally at 1.5 GPa, 1100°C to 1400°C, 5 min to 72 h under dry and melt-free conditions using a piston-cylinder apparatus. Starting assemblies consisting of Per | Qtz | Fo sandwiches produced polycrystalline double layers of forsterite and enstatite between periclase and quartz, and enstatite single layers between forsterite and quartz. The position of inert Pt-markers initially deposited at the interface of the reactants and inspection of mass balance confirmed that both layer-producing reactions are controlled by MgO diffusion, while SiO2 is relatively immobile. BSE and TEM imaging revealed thicknesses from 0.6 μm to 14 μm for double layers and from 0 to 6.8 μm for single layers. Both single and double layers displayed non-parabolic growth together with pronounced grain coarsening. Textural evolution and growth rates for each reaction are directly comparable. Forsterite-enstatite double layers are always wider than enstatite single layers, and the growth of enstatite in the double layer is slower than that in the single layer. In double layers, the enstatite/forsterite layer thickness ratio significantly increases with temperature, reflecting different MgO mobilities as temperature varies. Thus, thickness ratios in multilayered reaction zones may contain a record of temperature, but also that of any physico-chemical parameter that modifies the mobilities of the chemical components between the various layers. This potential is largely unexplored in geologically relevant systems, which calls for further experimental studies of multilayered reaction zones.

  6. Characterization of Si detectors, search for vertex and potentiality of detecting a light charged Higgs boson in the CMS experiment

    International Nuclear Information System (INIS)

    Estre, N.

    2004-01-01

    The CMS (compact muon solenoid) detector that will be set on the future LHC (large hadron collider) accelerator will enable us to continue our search for the Higgs boson as well as to look for any hint for a new physics beyond the standard model. CMS is composed of an efficient muon detector, an electromagnetic calorimeter and of a tracker with high spatial resolution, this tracker is the topic of this thesis. The tracker will allow an accurate reconstruction of charged-particles trajectories and the reconstruction of the primary interaction vertex. The tracker's technology is based on micro-strip Si detectors, tests performed with the SPS particle beam show that these detectors have an impact reconstruction efficiency greater than 98% and a piling-up rate limited to 6%. The spatial resolution concerning particle trajectories is about 45 μm for an interval of 183 μm between 2 strips. The simulation for the search for a light charged Higgs boson show that an excess of τν τ + bb-bar + qq-bar' events is possible to be observed for any value of tan(β) up to M A = 122 GeV/c 2 during the first year of operation and up to 136 GeV/c 2 afterwards. With the assumption that this event excess is due to the decay of charged Higgs bosons we can state that the assessment of its mass will be possible till m H = 150 GeV/c 2 with an accuracy of 15 GeV/c 2 . (A.C.)

  7. SI Notes.

    Science.gov (United States)

    Nelson, Robert A.

    1983-01-01

    Discusses legislation related to SI (International Systems of Units) in the United States. Indicates that although SI metric units have been officially recognized by law in the United States, U.S. Customary Units have never received a statutory basis. (JN)

  8. pH Sensitivity of Si-C Linked Organic Monolayers on Crystalline Silicon Surfaces: Titration Experiments, Mott Schottky Analysis and Site-Binding Modeling

    NARCIS (Netherlands)

    Faber, E.J.; Sparreboom, W.; Groeneveld, W.; Smet, de L.C.P.M.; Bomer, J.; Olthuis, W.; Zuilhof, H.; Sudhölter, E.J.R.; Bergveld, P.; Berg, van den A.

    2007-01-01

    The electrochemical behavior of SiC linked organic monolayers is studied in electrolyte-insulator-Si devices, under conditions normally encountered in potentiometric biosensors, to gain fundamental knowledge on the behavior of such Si electrodes under practical conditions. This is done via titration

  9. Distinguishing new science from calibration effects in the electron-volt neutron spectrometer VESUVIO at ISIS

    International Nuclear Information System (INIS)

    Chatzidimitriou-Dreismann, C.A.; Gray, E. MacA.; Blach, T.P.

    2012-01-01

    The “standard” procedure for calibrating the Vesuvio eV neutron spectrometer at the ISIS neutron source, forming the basis for data analysis over at least the last decade, was recently documented in considerable detail by the instrument's scientists. Additionally, we recently derived analytic expressions of the sensitivity of recoil peak positions with respect to fight-path parameters and presented neutron–proton scattering results that together called into question the validity of the “standard” calibration. These investigations should contribute significantly to the assessment of the experimental results obtained with Vesuvio. Here we present new results of neutron–deuteron scattering from D 2 in the backscattering angular range (θ>90°) which are accompanied by a striking energy increase that violates the Impulse Approximation, thus leading unequivocally the following dilemma: (A) either the “standard” calibration is correct and then the experimental results represent a novel quantum dynamical effect of D which stands in blatant contradiction of conventional theoretical expectations; (B) or the present “standard” calibration procedure is seriously deficient and leads to artificial outcomes. For Case (A), we allude to the topic of attosecond quantum dynamical phenomena and our recent neutron scattering experiments from H 2 molecules. For Case (B), some suggestions as to how the “standard” calibration could be considerably improved are made.

  10. Distinguishing new science from calibration effects in the electron-volt neutron spectrometer VESUVIO at ISIS

    Energy Technology Data Exchange (ETDEWEB)

    Chatzidimitriou-Dreismann, C.A., E-mail: dreismann@chem.tu-berlin.de [Institute of Chemistry (Sekr. C2), Technical University of Berlin, D-10623 Berlin (Germany); Gray, E. MacA., E-mail: e.gray@griffith.edu.au [Queensland Micro- and Nanotechnology Centre, Griffith University, Brisbane 4111 (Australia); Blach, T.P., E-mail: t.blach@griffith.edu.au [Queensland Micro- and Nanotechnology Centre, Griffith University, Brisbane 4111 (Australia)

    2012-06-01

    The 'standard' procedure for calibrating the Vesuvio eV neutron spectrometer at the ISIS neutron source, forming the basis for data analysis over at least the last decade, was recently documented in considerable detail by the instrument's scientists. Additionally, we recently derived analytic expressions of the sensitivity of recoil peak positions with respect to fight-path parameters and presented neutron-proton scattering results that together called into question the validity of the 'standard' calibration. These investigations should contribute significantly to the assessment of the experimental results obtained with Vesuvio. Here we present new results of neutron-deuteron scattering from D{sub 2} in the backscattering angular range ({theta}>90 Degree-Sign ) which are accompanied by a striking energy increase that violates the Impulse Approximation, thus leading unequivocally the following dilemma: (A) either the 'standard' calibration is correct and then the experimental results represent a novel quantum dynamical effect of D which stands in blatant contradiction of conventional theoretical expectations; (B) or the present 'standard' calibration procedure is seriously deficient and leads to artificial outcomes. For Case (A), we allude to the topic of attosecond quantum dynamical phenomena and our recent neutron scattering experiments from H{sub 2} molecules. For Case (B), some suggestions as to how the 'standard' calibration could be considerably improved are made.

  11. Distinguishing new science from calibration effects in the electron-volt neutron spectrometer VESUVIO at ISIS

    Science.gov (United States)

    Chatzidimitriou-Dreismann, C. A.; Gray, E. MacA.; Blach, T. P.

    2012-06-01

    The "standard" procedure for calibrating the Vesuvio eV neutron spectrometer at the ISIS neutron source, forming the basis for data analysis over at least the last decade, was recently documented in considerable detail by the instrument's scientists. Additionally, we recently derived analytic expressions of the sensitivity of recoil peak positions with respect to fight-path parameters and presented neutron-proton scattering results that together called into question the validity of the "standard" calibration. These investigations should contribute significantly to the assessment of the experimental results obtained with Vesuvio. Here we present new results of neutron-deuteron scattering from D2 in the backscattering angular range (θ>90°) which are accompanied by a striking energy increase that violates the Impulse Approximation, thus leading unequivocally the following dilemma: (A) either the "standard" calibration is correct and then the experimental results represent a novel quantum dynamical effect of D which stands in blatant contradiction of conventional theoretical expectations; (B) or the present "standard" calibration procedure is seriously deficient and leads to artificial outcomes. For Case (A), we allude to the topic of attosecond quantum dynamical phenomena and our recent neutron scattering experiments from H2 molecules. For Case (B), some suggestions as to how the "standard" calibration could be considerably improved are made.

  12. MCNP6 simulation of radiographs generated from megaelectron volt X-rays for characterizing a computed tomography system

    Science.gov (United States)

    Dooraghi, Alex A.; Tringe, Joseph W.

    2018-04-01

    To evaluate conventional munition, we simulated an x-ray computed tomography (CT) system for generating radiographs from nominal x-ray energies of 6 or 9 megaelectron volts (MeV). CT simulations, informed by measured data, allow for optimization of both system design and acquisition techniques necessary to enhance image quality. MCNP6 radiographic simulation tools were used to model ideal detector responses (DR) that assume either (1) a detector response proportional to photon flux (N) or (2) a detector response proportional to energy flux (E). As scatter may become significant with MeV x-ray systems, simulations were performed with and without the inclusion of object scatter. Simulations were compared against measurements of a cylindrical munition component principally composed of HMX, tungsten and aluminum encased in carbon fiber. Simulations and measurements used a 6 MeV peak energy x-ray spectrum filtered with 3.175 mm of tantalum. A detector response proportional to energy which includes object scatter agrees to within 0.6 % of the measured line integral of the linear attenuation coefficient. Exclusion of scatter increases the difference between measurement and simulation to 5 %. A detector response proportional to photon flux agrees to within 20 % when object scatter is included in the simulation and 27 % when object scatter is excluded.

  13. Coordinated Volt/Var Control in Distribution Systems with Distributed Generations Based on Joint Active and Reactive Powers Dispatch

    Directory of Open Access Journals (Sweden)

    Abouzar Samimi

    2016-01-01

    Full Text Available One of the most significant control schemes in optimal operation of distribution networks is Volt/Var control (VVC. Owing to the radial structure of distribution systems and distribution lines with a small X/R ratio, the active power scheduling affects the VVC issue. A Distribution System Operator (DSO procures its active and reactive power requirements from Distributed Generations (DGs along with the wholesale electricity market. This paper proposes a new operational scheduling method based on a joint day-ahead active/reactive power market at the distribution level. To this end, based on the capability curve, a generic reactive power cost model for DGs is developed. The joint active/reactive power dispatch model presented in this paper motivates DGs to actively participate not only in the energy markets, but also in the VVC scheme through a competitive market. The proposed method which will be performed in an offline manner aims to optimally determine (i the scheduled active and reactive power values of generation units; (ii reactive power values of switched capacitor banks; and (iii tap positions of transformers for the next day. The joint active/reactive power dispatch model for daily VVC is modeled in GAMS and solved with the DICOPT solver. Finally, the plausibility of the proposed scheduling framework is examined on a typical 22-bus distribution test network over a 24-h period.

  14. Formulation of the energetic spectral distribution of in pile neutron flux (energies greater than a few hundred electron volts) (1963); Formulation des repartitions spectrales energetiques de flux neutroniques en pile (energies superieures a quelques centaines d'electrons-volts) (1963)

    Energy Technology Data Exchange (ETDEWEB)

    Genthon, J P [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1964-07-01

    In the present report an expression is deduced for the spectral distribution of flux of over a few hundred electron volts; it is valid for most cases of thermal neutron reactors. This expression is: {psi}(E) = K [{psi}{sub o}(E) + h {psi}{sub e}(E)] {psi}{sub o}(E) is the so-called 'homogeneous' constituent of the flux; it corresponds approximately to the case of an infinite homogeneous medium; it is of the type: Y(V - E) e{sup (b{radical}}{sup E)}/E + Y(E-V) F E{sup {upsilon}} e{sup -{beta}}{sup E} The parameters V and F are such that {psi}{sub o}(E) and its derivative are continuous at the junction energy V. {psi}{sub e}(E) is the 'heterogeneous' constituent of the flux; it is of the type: E{sup {upsilon}} e{sup -{beta}}{sup E}. The various parameters of {psi}(E) are on the one hand characteristic of the nature of the reactor moderator, and on the other hand determined by a resonant flux measurement and one, or possibly two, measurements using a fast neutron threshold detector. We have been led furthermore to define an expression for the threshold reaction section which is more exact than the conventional transition function. (author) [French] Il est etabli, dans le present rapport, une formulation {psi}(E) des repartitions spectrales de flux au-dessus de quelques centaines d'electron-s volts, valable dans la majeure partie des cas de piles dites a neutrons thermiques. Cette formulation s'exprime: {psi}(E) = K [{psi}{sub o}(E) + h {psi}{sub e}(E)] {psi}{sub o}(E) est la composante dite 'homogene' du flux; elle correspond a peu pres au cas d'un milieu infini homogene; elle est du type: Y(V - E) e{sup (b{radical}}{sup E)}/E + Y(E-V) F E{sup {upsilon}} e{sup -{beta}}{sup E} les parametres V et F sont tels que {psi}{sub o}(E) et sa derivee soient continues a l'energie de jonction V. {psi}{sub e} est la composante dite 'heterogene' du flux ; elle est du type: E{sup {upsilon}} e{sup -{beta}}{sup E}. Les differents parametres de {psi}(E) sont, d'une part

  15. Pilot experience yellow tariff

    International Nuclear Information System (INIS)

    Cassanti, W.A.; Esteves Junior, L.

    1990-01-01

    In the search for alternatives to reduce the probability of a electric energy shortage, the National Electric Sector decided to apply Real Cost Supply Tariff. The implementation of this tariff method to consumers supplied on low tension, Group B (lower than 2300 Volts), demands a better knowledge of measurement equipment, tariff values and consumers receptivity for energy modulation and/or conservation, all objects of this Yellow Tariff Experience. (author)

  16. Power Hardware-in-the-Loop Testing of Multiple Photovoltaic Inverters' Volt-Var Control with Real-Time Grid Model

    Energy Technology Data Exchange (ETDEWEB)

    Chakraborty, Sudipta; Nelson, Austin; Hoke, Anderson

    2016-12-12

    Traditional testing methods fall short in evaluating interactions between multiple smart inverters providing advanced grid support functions due to the fact that such interactions largely depend on their placements on the electric distribution systems with impedances between them. Even though significant concerns have been raised by the utilities on the effects of such interactions, little effort has been made to evaluate them. In this paper, power hardware-in-the-loop (PHIL) based testing was utilized to evaluate autonomous volt-var operations of multiple smart photovoltaic (PV) inverters connected to a simple distribution feeder model. The results provided in this paper show that depending on volt-var control (VVC) parameters and grid parameters, interaction between inverters and between the inverter and the grid is possible in some extreme cases with very high VVC slopes, fast response times and large VVC response delays.

  17. Neuronal excitation and permeabilization by 200-ns pulsed electric field: An optical membrane potential study with FluoVolt dye.

    Science.gov (United States)

    Pakhomov, Andrei G; Semenov, Iurii; Casciola, Maura; Xiao, Shu

    2017-07-01

    Electric field pulses of nano- and picosecond duration are a novel modality for neurostimulation, activation of Ca 2+ signaling, and tissue ablation. However it is not known how such brief pulses activate voltage-gated ion channels. We studied excitation and electroporation of hippocampal neurons by 200-ns pulsed electric field (nsPEF), by means of time-lapse imaging of the optical membrane potential (OMP) with FluoVolt dye. Electroporation abruptly shifted OMP to a more depolarized level, which was reached within 10s), so cells remained above the resting OMP level for at least 20-30s. Activation of voltage-gated sodium channels (VGSC) enhanced the depolarizing effect of electroporation, resulting in an additional tetrodotoxin-sensitive OMP peak in 4-5ms after nsPEF. Omitting Ca 2+ in the extracellular solution did not reduce the depolarization, suggesting no contribution of voltage-gated calcium channels (VGCC). In 40% of neurons, nsPEF triggered a single action potential (AP), with the median threshold of 3kV/cm (range: 1.9-4kV/cm); no APs could be evoked by stimuli below the electroporation threshold (1.5-1.9kV/cm). VGSC opening could already be detected in 0.5ms after nsPEF, which is too fast to be mediated by the depolarizing effect of electroporation. The overlap of electroporation and AP thresholds does not necessarily reflect the causal relation, but suggests a low potency of nsPEF, as compared to conventional electrostimulation, for VGSC activation and AP induction. Copyright © 2017 Elsevier B.V. All rights reserved.

  18. LIBER 2010 / Mihkel Volt

    Index Scriptorium Estoniae

    Volt, Mihkel

    2010-01-01

    LIBER-i 2010. aasta konverentsi pealkirjaks oli "Taasavastades raamatukogu - uue infokeskkonna väljakutsed". Århusis toimunud konverentsil käsitleti nii teadusraamatukogu rolli e-teaduses ja e-õppes, teavikute massilist digiteerimist ja kollektsioonide säilitamist kui ka "taasavastatud raamatukogu" juhtimist, arutleti nende teemade kombineerimisvõimaluste üle

  19. Electrochemistry - variety from volts

    Energy Technology Data Exchange (ETDEWEB)

    Spurgeon, D.

    1985-07-01

    At a UNESCO conference held in Paris, France in June 1984 to honor Alessandro Volta, many experts maintained that electrochemistry holds much promise for the developing countries because many of its processes are inexpensive, simple, and easily adapted to the materials and conditions of the developing world. Some of the uses of electrochemistry highlighted at the conference, already available or imminent include: semiconductors in photoelectrochemical cells; photoelectrochemical systems for carrying out chemical reaction; electrophoretic deposition of paints or plastic coatings; electrochemical machining; quantitative analysis of chemicals, and diagnostics of brain chemistry.

  20. Performances of the Si microstrip detector of the STAR experiment at RHIC; Performances du detecteur en silicium a micropistes de l'experience STAR a RHIC

    Energy Technology Data Exchange (ETDEWEB)

    Bouchet, J

    2007-10-15

    The Silicon Strip Detector (SSD) is the fourth layer of detector using a double-sided microstrip technology of the STAR experiment at RHIC, completing STAR's inner tracking device. The goal of STAR is to study heavy ions collisions in order to probe the existence of the quark gluon plasma (QGP), a deconfined state of nuclear matter. Strangeness enhancement, such as {kappa}{sub S}{sup 0}, {lambda}, {xi} and {omega}, for particles production, has been proposed to sign the formation of QGP. Then precise measurement of secondary vertices is needed. The SSD will also permit an attempt to use the inner tracking device to measure charm and beauty with direct topological identification. It was proposed to enhance the STAR tracking capabilities by providing a better connection between reconstructed tracks in the main tracking device (TPC) and the initial vertex detector (SVT). In this thesis, we will present the intrinsic performances of the SSD and its impact on the inner tracking system performances by studying Cu-Cu collisions occurred at RHIC in 2005. We show that the SSD detector has excellent performances in terms of resolution: (945 {+-} 18) {mu}m in azimuth and (1021 {+-} 13) {mu}m along the beam axis. For the final result when SSD is associated to the SVT the resolutions are (281 {+-} 1) {mu}m and (213 {+-} 0.8) {mu}m in azimuth and along the beam axis respectively. The resolution reached by the addition of the Silicon Vertex detectors of STAR will allow the search for rare particles like charm and beauty, which have a decay-length of the order of hundred microns.

  1. Effect of low temperature and electron irradiation on the volt-ampere characteristics of silicon structures with p-n junctions; Vliyanie nizkikh temperatur i ehlektronnogo oblucheniya na vol`t-ampernye kharakteristiki kremnievykh struktur s p-n perekhodami

    Energy Technology Data Exchange (ETDEWEB)

    Korshunov, F P [and others

    1994-12-31

    Features of volt-ampere characteristic behaviour of silicon, diffusion p-n-p structures making up the basis of force diodes under their operation in the mode of nominal and overload current densities are investigated.

  2. Mass test of AdvanSiD model ASD-NUV3S-P SiliconPMs for the Pixel Timing Counter of the MEG II experiment

    Science.gov (United States)

    Rossella, M.; Bariani, S.; Barnaba, O.; Cattaneo, P. W.; Cervi, T.; Menegolli, A.; Nardò, R.; Prata, M. C.; Romano, E.; Scagliotti, C.; Simonetta, M.; Vercellati, F.

    2017-02-01

    The MEG II Timing Counter will measure the positron time of arrival with a resolution of 30 ps relying on two arrays of scintillator pixels read out by 6144 Silicon Photomultipliers (SiPMs) from AdvanSiD. They must be characterized, measuring their breakdown voltage, to assure that the gains of the SiPMs of each pixel are as uniform as possible, to maximize the pixel resolution. To do this an automatic test system that can measure sequentially the parameters of 32 devices has been developed.

  3. Growth of CoSi2 on Si(001) by reactive deposition epitaxy

    International Nuclear Information System (INIS)

    Lim, C.W.; Shin, C.-S.; Gall, D.; Zuo, J.M.; Petrov, I.; Greene, J.E.

    2005-01-01

    CaF 2 -structure CoSi 2 layers were formed on Si(001) by reactive deposition epitaxy (RDE) and compared with CoSi 2 layers obtained by conventional solid phase growth (SPG). In both sets of experiments, Co was deposited by ultrahigh-vacuum magnetron sputtering and CoSi 2 formed at 600 deg. C. However, in the case of RDE, CoSi 2 formation occurred during Co deposition while for SPG, Co was deposited at 25 deg. C and silicidation took place during subsequent annealing. X-ray diffraction pole figures and transmission electron microscopy results demonstrate that RDE CoSi 2 layers are epitaxial with a cube-on-cube relationship (001) CoSi 2 parallel (001) Si and [100] CoSi 2 parallel[100] Si . In contrast, SPG films are polycrystalline with an average grain size of ≅1000 A and a mixed 111/002/022/112 orientation. We attribute the striking difference to rapid Co diffusion into the Si(001) substrate during RDE for which the high Co/Si reactivity gives rise to a flux-limited reaction resulting in the direct formation of the disilicide phase. In contrast, sequential nucleation and transformation among increasingly Si-rich phases--from orthorhombic Co 2 Si to cubic CoSi to CoSi 2 --during SPG results in polycrystalline layers with a complex texture

  4. SiC/SiC Cladding Materials Properties Handbook

    Energy Technology Data Exchange (ETDEWEB)

    Snead, Mary A. [Brookhaven National Lab. (BNL), Upton, NY (United States); Katoh, Yutai [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Koyanagi, Takaaki [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Singh, Gyanender P. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2017-08-01

    When a new class of material is considered for a nuclear core structure, the in-pile performance is usually assessed based on multi-physics modeling in coordination with experiments. This report aims to provide data for the mechanical and physical properties and environmental resistance of silicon carbide (SiC) fiber–reinforced SiC matrix (SiC/SiC) composites for use in modeling for their application as accidenttolerant fuel cladding for light water reactors (LWRs). The properties are specific for tube geometry, although many properties can be predicted from planar specimen data. This report presents various properties, including mechanical properties, thermal properties, chemical stability under normal and offnormal operation conditions, hermeticity, and irradiation resistance. Table S.1 summarizes those properties mainly for nuclear-grade SiC/SiC composites fabricated via chemical vapor infiltration (CVI). While most of the important properties are available, this work found that data for the in-pile hydrothermal corrosion resistance of SiC materials and for thermal properties of tube materials are lacking for evaluation of SiC-based cladding for LWR applications.

  5. Oscillations in the fusion of the Si + Si systems

    International Nuclear Information System (INIS)

    Aguilera R, E.F.; Kolata, J.J.; DeYoung, P.A.; Vega, J.J.

    1986-02-01

    Excitation functions for the yields of all the residual nuclei from the 28 Si + 28,30 and 30 Si + 30 Si reactions have been measured via the γ-ray technique for center of mass energies in the region within one and two times the Coulomb barrier.Thirteen elements were identified for the first reaction and ten for the other two. While no structure is shown by the data for the 28 + 28 Si reaction, we have found evidence for intermediate width structure in the 2α and the αpn channels in 28 Si + 30 Si and for broad structure in the total fusion cross sections for 30 Si + 30 Si. Calculations using a barrier penetration model with one free parameter reproduce the experimental results quite well. Evaporation model calculations indicate that the individual structure of the nuclei involved in the respective decay chains might have an important influence upon the deexcitation process at the energies relevant to our experiments. (Author)

  6. Mechanics of patterned helical Si springs on Si substrate.

    Science.gov (United States)

    Liu, D L; Ye, D X; Khan, F; Tang, F; Lim, B K; Picu, R C; Wang, G C; Lu, T M

    2003-12-01

    The elastic response, including the spring constant, of individual Si helical-shape submicron springs, was measured using a tip-cantilever assembly attached to a conventional atomic force microscope. The isolated, four-turn Si springs were fabricated using oblique angle deposition with substrate rotation, also known as the glancing angle deposition, on a templated Si substrate. The response of the structures was modeled using finite elements, and it was shown that the conventional formulae for the spring constant required modifications before they could be used for the loading scheme used in the present experiment.

  7. Oscillations in the fusion of the Si + Si systems; Oscilaciones en la fusion de sistemas de Si + Si

    Energy Technology Data Exchange (ETDEWEB)

    Aguilera R, E F; Kolata, J J; DeYoung, P A; Vega, J J [ININ, 52045 Ocoyoacac, Estado de Mexico (Mexico)

    1986-02-15

    Excitation functions for the yields of all the residual nuclei from the {sup 28} Si + {sup 28,30} and {sup 30} Si + {sup 30} Si reactions have been measured via the {gamma}-ray technique for center of mass energies in the region within one and two times the Coulomb barrier.Thirteen elements were identified for the first reaction and ten for the other two. While no structure is shown by the data for the {sup 28} + {sup 28} Si reaction, we have found evidence for intermediate width structure in the 2{alpha} and the {alpha}pn channels in {sup 28} Si + {sup 30} Si and for broad structure in the total fusion cross sections for {sup 30} Si + {sup 30} Si. Calculations using a barrier penetration model with one free parameter reproduce the experimental results quite well. Evaporation model calculations indicate that the individual structure of the nuclei involved in the respective decay chains might have an important influence upon the deexcitation process at the energies relevant to our experiments. (Author)

  8. A low-noise X-band microstrip VCO with 2.5 GHz tuning range using a GaN-on-SiC p-HEMT

    NARCIS (Netherlands)

    Maas, A.M.P.; Vliet, F.E. van

    2005-01-01

    A low-noise X-band microstrip hybrid VCO has been designed and realised using a 2 × 50 μm GaN-on-SiC pseudo-morphic HEMT as the active device. The transistor has been manufactured by TIGER and features a gate-length of 0.15 μm, an fT of 22 GHz, a break-down voltage of 42 Volts and an Idss, close to

  9. Interfacial stability of CoSi2/Si structures grown by molecular beam epitaxy

    Science.gov (United States)

    George, T.; Fathauer, R. W.

    1992-01-01

    The stability of CoSi2/Si interfaces was examined in this study using columnar silicide structures grown on (111) Si substrates. In the first set of experiments, Co and Si were codeposited using MBE at 800 C and the resulting columnar silicide layer was capped by epitaxial Si. Deposition of Co on the surface of the Si capping layer at 800 C results in the growth of the buried silicide columns. The buried columns grow by subsurface diffusion of the deposited Co, suppressing the formation of surface islands of CoSi2. The column sidewalls appear to be less stable than the top and bottom interfaces, resulting in preferential lateral growth and ultimately in the coalescence of the columns to form a continuous buried CoSi2 layer. In the second set of experiments, annealing of a 250 nm-thick buried columnar layer at 1000 C under a 100 nm-thick Si capping layer results in the formation of a surface layer of CoSi2 with a reduction in the sizes of the CoSi2 columns. For a sample having a thicker Si capping layer the annealing leads to Ostwald ripening producing buried equiaxed columns. The high CoSi2/Si interfacial strain could provide the driving force for the observed behavior of the buried columns under high-temperature annealing.

  10. Reflooding Experimental On Beta Test Loop : The Characterisation And Preliminary Experiment

    International Nuclear Information System (INIS)

    Khairul, H.; Antariksawan, Anhar R.; Sumamo, Edy; Kiswanta; Giarno; Joko, P.; H, Ismu

    2001-01-01

    The characterisation and preliminary experiment of reflooding had been conducted. The characteristics of main system and component had been identified completely. From these characteristics the experiment condition was set up : heated rod voltage was 20 volt, frequency,of pump was 19 Hz, flow rate was 1 m3/h. The first of experiment did not show the phenomena of rewetting. Possibly because the heated rod temperature was too low. For the second experiment, the voltage of heated rod was increased to 22 Volt and the flow rate was decreased. The result was that the nucleation boiling on the surfaced of heated rod, was observed during the water re flooded the test section

  11. Da sujeição às experiências de constituição de si na função - educador: aproximações foucautianas/From the subjects to the experiences of building up themselves in the educator-function...

    Directory of Open Access Journals (Sweden)

    Alexandre Filordi de Carvalho

    Full Text Available CARVALHO, A. F. Da sujeição às experiências de constituição de si na função - educador: aproximações foucautianas. 204fl. 2008. Tese (Doutorado em Educação - Faculdade de Educação, Universidade Estadual de Campinas, Campinas. 2008.

  12. Self-learning kinetic Monte Carlo simulations of diffusion in ferromagnetic α-Fe-Si alloys

    Science.gov (United States)

    Nandipati, Giridhar; Jiang, Xiujuan; Vemuri, Rama S.; Mathaudhu, Suveen; Rohatgi, Aashish

    2018-01-01

    Diffusion of Si atom and vacancy in the A2-phase of α-Fe-Si alloys in the ferromagnetic state, with and without magnetic order and in various temperature ranges, are studied using AKSOME, an on-lattice self-learning KMC code. Diffusion of the Si atom and the vacancy are studied in the dilute limit and up to 12 at.% Si, respectively, in the temperature range 350-700 K. Local Si neighborhood dependent activation energies for vacancy hops were calculated on-the-fly using a broken-bond model based on pairwise interaction. The migration barrier and prefactor for the Si diffusion in the dilute limit were obtained and found to agree with published data within the limits of uncertainty. Simulations results show that the prefactor and the migration barrier for the Si diffusion are approximately an order of magnitude higher, and a tenth of an electron-volt higher, respectively, in the magnetic disordered state than in the fully ordered state. However, the net result is that magnetic disorder does not have a significant effect on Si diffusivity within the range of parameters studied in this work. Nevertheless, with increasing temperature, the magnetic disorder increases and its effect on the Si diffusivity also increases. In the case of vacancy diffusion, with increasing Si concentration, its diffusion prefactor decreases while the migration barrier more or less remained constant and the effect of magnetic disorder increases with Si concentration. Important vacancy-Si/Fe atom exchange processes and their activation barriers were identified, and the effect of energetics on ordered phase formation in Fe-Si alloys are discussed.

  13. The front-end electronics and slow control of large area SiPM for the SST-1M camera developed for the CTA experiment

    Czech Academy of Sciences Publication Activity Database

    Aguilar, J.A.; Bilnik, W.; Borkowski, J.; Mandát, Dušan; Pech, Miroslav; Schovánek, Petr

    Roč. 830, Sep (2016), s. 219-232 ISSN 0168-9002 R&D Projects: GA MŠk LM2015046; GA MŠk LE13012; GA MŠk LG14019 Institutional support: RVO:68378271 Keywords : CTA * SiPM * G-APD * preamplifier * front-end * slow-control * compensation Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 1.362, year: 2016

  14. Passivation layer of Si/Li ionizing radiation detectors

    International Nuclear Information System (INIS)

    Vidra, M.; Reznicek, L.

    1992-01-01

    The proposed passivating layer of Si/Li ionizing radiation detectors ensures a good long-time stability of their volt-ampere characteristics and noise properties. The layer can be applied to protect the detector junction surface in systems cyclically cooled to liquid nitrogen temperature, and in preamplifier feedback optoelectronics to prevent light from entering into the detector. The passivating layer is obtained by evaporating solvent from a cured suspension of boron nitride or aluminium oxide powder in a solution containing piceine and a nonpolar solvent such as toluene. The weight proportions are 1 to 8 parts of piceine, 3 to 9 parts of boron nitride or aluminium oxide, and 1 to 10 parts of the nonpolar solvent. (Z.S.)

  15. Contribution to the theoretical and experimental study of the electron-volt effect in N-P junctions; Contribution a l'etude theorique et experimentale de l'effet electronvoltaique dans les jonctions N-P

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen Van, Dong [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1959-07-15

    The proposed aim of this work is to study the behaviour of a semi-conducting junction under the action of {beta} radiation. These studies were directed on the one hand to direct conversion of the energy radiated by a radioactive source to electric energy usable by means of N-P junctions, and on the other hand to the kinetics of defects produced in the semi-conductor crystals by high energy {beta} rays. In the first part of this work, an attempt has been made to complete the earlier theories of the electron-volt effect in junctions by analysing the effect mathematically. This has led to a single equation containing the electrical and geometric parameters of the semi-conductor and of the junction, and the properties of the incident radiation. Apart from this, the diffusion current of the charge carriers created by the bombardment has been studied in more detail, taking into account all the factors which play a part in the expression of the efficiency of charge collection of a junction. In the second part, where experiments on the irradiation of N-P junctions have been carried out with a {sup 90}Sr-{sup 90}Y source, mention is made of the particular advantages of a gallium arsenide junction capable of operating at relatively high temperatures (in the region of 100 deg. C). The third part presents the study of defects created in a semi-conductor crystal by high-energy {beta} rays, according to the method of electron-volt effect. It is shown here that from a study of the degradation of the short-circuit current of the junction it may be possible to determine the recombination level and the probabilities of electron and hole capture, as from a study of the lifetime decay of minority carriers in a crystal of known type. Experiments on the bombardment of Ge junctions by 2 MeV electrons were performed with a Van de Graaff. Very clear anomalies of the electron-volt effect at 100 deg. K were observed. An attempt was made at interpretation of these anomalies in the junction

  16. Contribution to the theoretical and experimental study of the electron-volt effect in N-P junctions; Contribution a l'etude theorique et experimentale de l'effet electronvoltaique dans les jonctions N-P

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen Van, Dong [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1959-07-15

    The proposed aim of this work is to study the behaviour of a semi-conducting junction under the action of {beta} radiation. These studies were directed on the one hand to direct conversion of the energy radiated by a radioactive source to electric energy usable by means of N-P junctions, and on the other hand to the kinetics of defects produced in the semi-conductor crystals by high energy {beta} rays. In the first part of this work, an attempt has been made to complete the earlier theories of the electron-volt effect in junctions by analysing the effect mathematically. This has led to a single equation containing the electrical and geometric parameters of the semi-conductor and of the junction, and the properties of the incident radiation. Apart from this, the diffusion current of the charge carriers created by the bombardment has been studied in more detail, taking into account all the factors which play a part in the expression of the efficiency of charge collection of a junction. In the second part, where experiments on the irradiation of N-P junctions have been carried out with a {sup 90}Sr-{sup 90}Y source, mention is made of the particular advantages of a gallium arsenide junction capable of operating at relatively high temperatures (in the region of 100 deg. C). The third part presents the study of defects created in a semi-conductor crystal by high-energy {beta} rays, according to the method of electron-volt effect. It is shown here that from a study of the degradation of the short-circuit current of the junction it may be possible to determine the recombination level and the probabilities of electron and hole capture, as from a study of the lifetime decay of minority carriers in a crystal of known type. Experiments on the bombardment of Ge junctions by 2 MeV electrons were performed with a Van de Graaff. Very clear anomalies of the electron-volt effect at 100 deg. K were observed. An attempt was made at interpretation of these anomalies in the junction

  17. Naphthalenetetracarboxylic diimide layer-based transistors with nanometer oxide and side chain dielectrics operating below one volt.

    Science.gov (United States)

    Jung, Byung Jun; Martinez Hardigree, Josue F; Dhar, Bal Mukund; Dawidczyk, Thomas J; Sun, Jia; See, Kevin Cua; Katz, Howard E

    2011-04-26

    We designed a new naphthalenetetracarboxylic diimide (NTCDI) semiconductor molecule with long fluoroalkylbenzyl side chains. The side chains, 1.2 nm long, not only aid in self-assembly and kinetically stabilize injected electrons but also act as part of the gate dielectric in field-effect transistors. On Si substrates coated only with the 2 nm thick native oxide, NTCDI semiconductor films were deposited with thicknesses from 17 to 120 nm. Top contact Au electrodes were deposited as sources and drains. The devices showed good transistor characteristics in air with 0.1-1 μA of drain current at 0.5 V of V(G) and V(DS) and W/L of 10-20, even though channel width (250 μm) is over 1000 times the distance (20 nm) between gate and drain electrodes. The extracted capacitance-times-mobility product, an expression of the sheet transconductance, can exceed 100 nS V(-1), 2 orders of magnitude higher than typical organic transistors. The vertical low-frequency capacitance with gate voltage applied in the accumulation regime reached as high as 650 nF/cm(2), matching the harmonic sum of capacitances of the native oxide and one side chain and indicating that some gate-induced carriers in such devices are distributed among all of the NTCDI core layers, although the preponderance of the carriers are still near the gate electrode. Besides demonstrating and analyzing thickness-dependent NTCDI-based transistor behavior, we also showed <1 V detection of dinitrotoluene vapor by such transistors.

  18. Chemical compatibility issues associated with use of SiC/SiC in advanced reactor concepts

    Energy Technology Data Exchange (ETDEWEB)

    Wilson, Dane F. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2015-09-01

    Silicon carbide/silicon carbide (SiC/SiC) composites are of interest for components that will experience high radiation fields in the High Temperature Gas Cooled Reactor (HTGR), the Very High Temperature Reactor (VHTR), the Sodium Fast Reactor (SFR), or the Fluoride-cooled High-temperature Reactor (FHR). In all of the reactor systems considered, reactions of SiC/SiC composites with the constituents of the coolant determine suitability of materials of construction. The material of interest is nuclear grade SiC/SiC composites, which consist of a SiC matrix [high-purity, chemical vapor deposition (CVD) SiC or liquid phase-sintered SiC that is crystalline beta-phase SiC containing small amounts of alumina-yttria impurity], a pyrolytic carbon interphase, and somewhat impure yet crystalline beta-phase SiC fibers. The interphase and fiber components may or may not be exposed, at least initially, to the reactor coolant. The chemical compatibility of SiC/SiC composites in the three reactor environments is highly dependent on thermodynamic stability with the pure coolant, and on reactions with impurities present in the environment including any ingress of oxygen and moisture. In general, there is a dearth of information on the performance of SiC in these environments. While there is little to no excess Si present in the new SiC/SiC composites, the reaction of Si with O2 cannot be ignored, especially for the FHR, in which environment the product, SiO2, can be readily removed by the fluoride salt. In all systems, reaction of the carbon interphase layer with oxygen is possible especially under abnormal conditions such as loss of coolant (resulting in increased temperature), and air and/ or steam ingress. A global outline of an approach to resolving SiC/SiC chemical compatibility concerns with the environments of the three reactors is presented along with ideas to quickly determine the baseline compatibility performance of SiC/SiC.

  19. SiD Letter of Intent

    Energy Technology Data Exchange (ETDEWEB)

    Aihara, H., (Ed.); Burrows, P., (Ed.); Oreglia, M., (Ed.); Berger, E.L.; Guarino, V.; Repond, J.; Weerts, H.; Xia, L.; Zhang, J.; /Argonne, HEP; Zhang, Q.; /Argonne, HEP /Beijing, Inst. High Energy Phys.; Srivastava, A.; /Birla Inst. Tech. Sci.; Butler, J.M.; /Boston U.; Goldstein, Joel; Velthuis, J.; /Bristol U.; Radeka, V.; /Brookhaven; Zhu, R.-Y.; /Caltech.; Lutz, P.; /DAPNIA, Saclay; de Roeck, A.; Elsener, K.; Gaddi, A.; Gerwig, H.; /CERN /Cornell U., LNS /Ewha Women' s U., Seoul /Fermilab /Gent U. /Darmstadt, GSI /Imperial Coll., London /Barcelona, Inst. Microelectron. /KLTE-ATOMKI /Valencia U., IFIC /Cantabria Inst. of Phys. /Louis Pasteur U., Strasbourg I /Durham U., IPPP /Kansas State U. /Kyungpook Natl. U. /Annecy, LAPP /LLNL, Livermore /Louisiana Tech. U. /Paris U., VI-VII /Paris U., VI-VII /Munich, Max Planck Inst. /MIT, LNS /Chicago, CBC /Moscow State U. /Nanjing U. /Northern Illinois U. /Obninsk State Nucl. Eng. U. /Paris U., VI-VII /Strasbourg, IPHC /Prague, Inst. Phys. /Princeton U. /Purdue U. /Rutherford /SLAC /SUNY, Stony Brook /Barcelona U. /Bonn U. /UC, Davis /UC, Santa Cruz /Chicago U. /Colorado U. /Delhi U. /Hawaii U. /Helsinki U. /Indiana U. /Iowa U. /Massachusetts U., Amherst /Melbourne U. /Michigan U. /Minnesota U. /Mississippi U. /Montenegro U. /New Mexico U. /Notre Dame U. /Oregon U. /Oxford U. /Ramon Llull U., Barcelona /Rochester U. /Santiago de Compostela U., IGFAE /Hefei, CUST /Texas U., Arlington /Texas U., Dallas /Tokyo U. /Washington U., Seattle /Wisconsin U., Madison /Wayne State U. /Yale U. /Yonsei U.

    2012-04-11

    This document presents the current status of the Silicon Detector (SiD) effort to develop an optimized design for an experiment at the International Linear Collider. It presents detailed discussions of each of SiD's various subsystems, an overview of the full GEANT4 description of SiD, the status of newly developed tracking and calorimeter reconstruction algorithms, studies of subsystem performance based on these tools, results of physics benchmarking analyses, an estimate of the cost of the detector, and an assessment of the detector R and D needed to provide the technical basis for an optimised SiD.

  20. Realization of Colored Multicrystalline Silicon Solar Cells with SiO2/SiNx:H Double Layer Antireflection Coatings

    Directory of Open Access Journals (Sweden)

    Minghua Li

    2013-01-01

    Full Text Available We presented a method to use SiO2/SiNx:H double layer antireflection coatings (DARC on acid textures to fabricate colored multicrystalline silicon (mc-Si solar cells. Firstly, we modeled the perceived colors and short-circuit current density (Jsc as a function of SiNx:H thickness for single layer SiNx:H, and as a function of SiO2 thickness for the case of SiO2/SiNx:H (DARC with fixed SiNx:H (refractive index n=2.1 at 633 nm, and thickness = 80 nm. The simulation results show that it is possible to achieve various colors by adjusting the thickness of SiO2 to avoid significant optical losses. Therefore, we carried out the experiments by using electron beam (e-beam evaporation to deposit a layer of SiO2 over the standard SiNx:H for 156×156 mm2 mc-Si solar cells which were fabricated by a conventional process. Semisphere reflectivity over 300 nm to 1100 nm and I-V measurements were performed for grey yellow, purple, deep blue, and green cells. The efficiency of colored SiO2/SiNx:H DARC cells is comparable to that of standard SiNx:H light blue cells, which shows the potential of colored cells in industrial applications.

  1. Axial Magneto-Inductive Effect in Soft Magnetic Microfibers, Test Methodology, and Experiments

    Science.gov (United States)

    2016-03-24

    Nickle nT Nano- Tesla Si Silicon V Volts w Exchange Energy W Watts Zm Coil Impedance, measured  Circumferential Field Direction T Micro... Tesla  Ratio of Coil Length to Diameter  Ohm ° Degrees 1 (2 blank) 1. INTRODUCTION Magneto-induction (MI) effects in soft...axial magnetic field is utilized to excite the fiber. Previous investigators have demonstrated this effect with small coils applied directly to the

  2. Ordering at Si(111)/o-Si and Si(111)/SiO2 Interfaces

    DEFF Research Database (Denmark)

    Robinson, I. K.; Waskiewicz, W. K.; Tung, R. T.

    1986-01-01

    X-ray diffraction has been used to measure the intensity profile of the two-dimensional rods of scattering from a single interface buried inside a bulk material. In both Si(111)/a-Si and Si(111)/SiO2 examples there are features in the perpendicular-momentum-transfer dependence which are not expec...... are not expected from an ideal sharp interface. The diffraction profiles are explained by models with partially ordered layers extending into the amorphous region. In the Si(111)/a-Si case there is clear evidence of stacking faults which are attributed to residual 7×7 reconstruction....

  3. Detailed measurements of local thickness changes for U-7Mo dispersion fuel plates with Al-3.5Si matrix after irradiation at different powers in the RERTR-9B experiment

    Science.gov (United States)

    Keiser, Dennis D.; Williams, Walter; Robinson, Adam; Wachs, Dan; Moore, Glenn; Crawford, Doug

    2017-10-01

    The Materials Management and Minimization program is developing fuel designs to replace highly enriched fuel with fuels of low enrichment. Swelling is an important irradiation behavior that needs to be well understood. Data from high resolution thickness measurements performed on U-7Mo dispersion fuel plates with Al-Si alloy matrices that were irradiated at high power is sparse. This paper reports the results of detailed thickness measurements performed on two dispersion fuel plates that were irradiated at relatively high power to high fission densities in the Advanced Test Reactor in the same RERTR-9B experiment. Both plates were irradiated to similar fission densities, but one was irradiated at a higher power than the other. The goal of this work is to identify any differences in the swelling behavior when fuel plates are irradiated at different powers to the same fission densities. Based on the results of detailed thickness measurments, more swelling occurs when a U-7Mo dispersion fuel with Al-3.5Si matrix is irradiated to a high fission density at high power compared to one irradiated at a lower power to high fission density.

  4. Phase Equilibrium Experiments on Potential Lunar Core Compositions: Extension of Current Knowledge to Multi-Component (Fe-Ni-Si-S-C) Systems

    Science.gov (United States)

    Righter, K.; Pando, K.; Danielson, L.

    2014-01-01

    Numerous geophysical and geochemical studies have suggested the existence of a small metallic lunar core, but the composition of that core is not known. Knowledge of the composition can have a large impact on the thermal evolution of the core, its possible early dynamo creation, and its overall size and fraction of solid and liquid. Thermal models predict that the current temperature at the core-mantle boundary of the Moon is near 1650 K. Re-evaluation of Apollo seismic data has highlighted the need for new data in a broader range of bulk core compositions in the PT range of the lunar core. Geochemical measurements have suggested a more volatile-rich Moon than previously thought. And GRAIL mission data may allow much better constraints on the physical nature of the lunar core. All of these factors have led us to determine new phase equilibria experimental studies in the Fe-Ni-S-C-Si system in the relevant PT range of the lunar core that will help constrain the composition of Moon's core.

  5. Positron annihilation in SiO 2-Si studied by a pulsed slow positron beam

    Science.gov (United States)

    Suzuki, R.; Ohdaira, T.; Uedono, A.; Kobayashi, Y.

    2002-06-01

    Positron and positronium (Ps) behavior in SiO 2-Si have been studied by means of positron annihilation lifetime spectroscopy (PALS) and age-momentum correlation (AMOC) spectroscopy with a pulsed slow positron beam. The PALS study of SiO 2-Si samples, which were prepared by a dry-oxygen thermal process, revealed that the positrons implanted in the Si substrate and diffused back to the interface do not contribute to the ortho-Ps long-lived component, and the lifetime spectrum of the interface has at least two components. From the AMOC study, the momentum distribution of the ortho-Ps pick-off annihilation in SiO 2, which shows broader momentum distribution than that of crystalline Si, was found to be almost the same as that of free positron annihilation in SiO 2. A varied interface model was proposed to interpret the results of the metal-oxide-semiconductor (MOS) experiments. The narrow momentum distribution found in the n-type MOS with a negative gate bias voltage could be attributed to Ps formation and rapid spin exchange in the SiO 2-Si interface. We have developed a two-dimensional positron lifetime technique, which measures annihilation time and pulse height of the scintillation gamma-ray detector for each event. Using this technique, the positronium behavior in a porous SiO 2 film, grown by a sputtering method, has been studied.

  6. Three Crystalline Polymorphs of KFeSi04, Potassium Ferrisilicate

    DEFF Research Database (Denmark)

    Bentzen, Janet Jonna

    1983-01-01

    Orthorhombic α-KFeSi04 ( a =0.5478, b =0.9192, c =0.8580 nm), hexagonal β-KFeSiO4 (a =0.5309, c =0.8873 nm), and hexagonal γ-KFeSi04 (a =0.5319, c =0.8815 nm) were synthesized by devitrification of KFeSiO4 glass. Powder X-ray diffraction data are given for all three polymorphs. Alpha KFeSiO4, the......, and synthetic kaliophilite, KAISiO4, respectively, and it is proposed that β- and λ-KFeSiO4 are linked by Si-Fe order-disorder. Beta KFeSiO4 transforms slowly into α-KFeSi04 above 910°C but the transformation was not shown to be reversible in the present dry-heating experiments....

  7. Ag on Si(111) from basic science to application

    Energy Technology Data Exchange (ETDEWEB)

    Belianinov, Aleksey [Iowa State Univ., Ames, IA (United States)

    2012-01-01

    In our work we revisit Ag and Au adsorbates on Si(111)-7x7, as well as experiment with a ternary system of Pentacene, Ag and Si(111). Of particular interest to us is the Si(111)-(√3x√3)R30°}–Ag (Ag-Si-√3 hereafter). In this thesis I systematically explore effects of Ag deposition on the Ag-Si-√3 at different temperatures, film thicknesses and deposition fluxes. The generated insight of the Ag system on the Si(111) is then applied to generate novel methods of nanostructuring and nanowire growth. I then extend our expertise to the Au system on the Ag-Si(111) to gain insight into Au-Si eutectic silicide formation. Finally we explore behavior and growth modes of an organic molecule on the Ag-Si interface.

  8. Design of a Versatile and Low Cost μVolt Level A to D Conversion System for Use in Medical Instrumentation Applications

    Directory of Open Access Journals (Sweden)

    Neil Robinson

    2008-10-01

    Full Text Available Modern medical facilities place considerable reliance on electronic instrumentation for purposes of calibration and monitoring of therapeutic processes, many of which employ electrical and electronic apparatus that itself generates considerable levels of interference in the form of background electromagnetic radiation (EMR. Additionally diverse ambient conditions in the clinical environment such as uncontrolled temperature, humidity, noise, and vibration place added stress on sensitive instrumentation. In order to obtain accurate, repeatable, and reliable data in such environments, instrumentation used must be largely immune to these factors. Analogue instrumentation is particularly susceptible to unstable environmental conditions. Sensors typically output an analogue current or voltage and it can be demonstrated that considerable overall benefit to the measuring process would result if sensor outputs could be converted to a robust digital format at the earliest possible stage. A practical and low cost system for A to D conversion at μVolt signal levels is described in this work. It has been successfully employed in portable radiation dosimetry instrumentation and used under diverse clinical conditions and it affords an improvement in signal resolution in excess of an order of magnitude over commonly used analogue techniques.

  9. Origins of Discrepancies Between Kinetic Rate Law Theory and Experiments in the Na2O-B2O3-SiO2 System

    International Nuclear Information System (INIS)

    McGrail, B. PETER; Icenhower, Jonathan P.; Rodriguez, Elsa A.; McGrail, B.P.; Cragnolino, G.A.

    2002-01-01

    Discrepancies between classical kinetic rate law theory and experiment were quantitatively assessed and found to correlate with macromolecular amorphous separation in the sodium borosilicate glass system. A quantitative reinterpretation of static corrosion data and new SPFT data shows that a recently advanced protective surface layer theory fails to describe the observed dissolution behavior of simple and complex silicate glasses under carefully controlled experimental conditions. The hypothesis is shown to be self-inconsistent in contrast with a phase separation model that is in quantitative agreement with experiments

  10. Present status of SiCf/SiC composites as low-activation structural materials of fusion reactor in Japan

    International Nuclear Information System (INIS)

    Kohyama, A.; Katoh, Y.; Hasegawa, A.; Noda, T.

    2001-01-01

    The outline of research subjects on SiCf/SiC composites to apply to the structural components of fusion reactors are described and present status on material development of SiCf/SiC composites in Japan is reviewed. Irradiation experiments of the composites using fission reactors conducted by international collaborations to clarify their radiation response and to optimize the fabrication processes are introduced. (author)

  11. experience

    Directory of Open Access Journals (Sweden)

    Fernanda da R. Becker

    2007-01-01

    Full Text Available La Educación Infantil es un derecho reconocido en la Convención de Derechos de los Niños (2005. Sin embargo, este derecho ha sido pasado por alto, pues muchos países no tienen programas oficiales para los primeros años de infancia, o si tienen algunos programas, éstos no son efectivos. En 1966, el gobierno brasileño adoptó la política de integrar dentro del sector educativo la responsabilidad administrativa de las sala-cunas de niños y niñas de cero a tres años y de los preescolares de cuatro a seis años, lo cual fue un primer paso para la expansión de la provisión de Educación Inicial. Diez años más tarde, todavía hay una carencia de establecimientos públicos y los gobiernos locales no le dan alta prioridad en sus presupuestos a esta fase de la educación. Este artículo se dirige a analizar la experiencia brasileña de Educación Inicial, con el fin de identificar los obstáculos que todavía impiden lograr las metas establecidas. El análisis empírico se enfoca hacia las diferencias entre las regiones del país y entre las etapas de expansión de la Educación Inicial, para medir la brecha existente entre el número de matrículas y la demanda por cupos. Se evalúan los datos oficiales, como el número de establecimientos y de matrículas desde 1996 hasta 2006. El análisis señala algunos obstáculos que deberían superar los gobiernos locales para poder mejorar la provisión y la calidad de la Educación Inicial

  12. Isotopic effects in sub-barrier fusion of Si + Si systems

    Science.gov (United States)

    Colucci, G.; Montagnoli, G.; Stefanini, A. M.; Esbensen, H.; Bourgin, D.; Čolović, P.; Corradi, L.; Faggian, M.; Fioretto, E.; Galtarossa, F.; Goasduff, A.; Grebosz, J.; Haas, F.; Mazzocco, M.; Scarlassara, F.; Stefanini, C.; Strano, E.; Szilner, S.; Urbani, M.; Zhang, G. L.

    2018-04-01

    Background: Recent measurements of fusion cross sections for the 28Si+28Si system revealed a rather unsystematic behavior; i.e., they drop faster near the barrier than at lower energies. This was tentatively attributed to the large oblate deformation of 28Si because coupled-channels (CC) calculations largely underestimate the 28Si+28Si cross sections at low energies, unless a weak imaginary potential is applied, probably simulating the deformation. 30Si has no permanent deformation and its low-energy excitations are of a vibrational nature. Previous measurements of this system reached only 4 mb, which is not sufficient to obtain information on effects that should show up at lower energies. Purpose: The aim of the present experiment was twofold: (i) to clarify the underlying fusion dynamics by measuring the symmetric case 30Si+30Si in an energy range from around the Coulomb barrier to deep sub-barrier energies, and (ii) to compare the results with the behavior of 28Si+28Si involving two deformed nuclei. Methods: 30Si beams from the XTU tandem accelerator of the Laboratori Nazionali di Legnaro of the Istituto Nazionale di Fisica Nucleare were used, bombarding thin metallic 30Si targets (50 μ g /cm2) enriched to 99.64 % in mass 30. An electrostatic beam deflector allowed the detection of fusion evaporation residues (ERs) at very forward angles, and angular distributions of ERs were measured. Results: The excitation function of 30Si+30Si was measured down to the level of a few microbarns. It has a regular shape, at variance with the unusual trend of 28Si+28Si . The extracted logarithmic derivative does not reach the LCS limit at low energies, so that no maximum of the S factor shows up. CC calculations were performed including the low-lying 2+ and 3- excitations. Conclusions: Using a Woods-Saxon potential the experimental cross sections at low energies are overpredicted, and this is a clear sign of hindrance, while the calculations performed with a M3Y + repulsion

  13. Titanium-bearing phases in the Earth's mantle (evidence from experiments in the MgO-SiO2-TiO2 ±Al2O3 system at 10-24 GPa)

    Science.gov (United States)

    Sirotkina, Ekaterina; Bobrov, Andrey; Bindi, Luca; Irifune, Tetsuo

    2017-04-01

    Introduction Despite significant interest of experimentalists to the study of geophysically important phase equilibria in the Earth's mantle and a huge experimental database on a number of the model and multicomponent systems, incorporation of minor elements in mantle phases was mostly studied on a qualitative level. The influence of such elements on structural peculiarities of high-pressure phases is poorly investigated, although incorporation of even small portions of them may have a certain impact on the PT-parameters of phase transformations. Titanium is one of such elements with the low bulk concentrations in the Earth's mantle (0.2 wt % TiO2) [1]; however, Ti-rich lithologies may occur in the mantle as a result of oceanic crust subduction. Thus, the titanium content is 0.6 wt% in Global Oceanic Subducted Sediments (GLOSS) [2], and 1.5 wt% TiO2, in MORB [3]. In this regard, accumulation of titanium in the Earth's mantle is related to crust-mantle interaction during the subduction of crustal material at different depths of the mantle. Experimental methods At 10-24 GPa and 1600°C, we studied the full range of the starting materials in the MgSiO3 (En) - MgTiO3 (Gkl) system in increments of 10-20 mol% Gkl and 1-3 GPa, which allowed us to plot the phase PX diagram for the system MgSiO3-MgTiO3 and synthesize titanium-bearing phases with a wide compositional range. The experiments were performed using a 2000-t Kawai-type multi-anvil high-pressure apparatus at the Geodynamics Research Center, Ehime University (Japan). The quenched samples were examined by single-crystal X-ray diffractometer, and the composition of phases was analyzed using SEM-EDS. Results The main phases obtained in experiments were rutile, wadsleyite, MgSiO3-enstatite, MgTiO3-ilmenite, MgTiSi2O7 with the weberite structure type (Web), Mg(Si,Ti)O3 and MgSiO3 with perovskite-type structure. At a pressure of 13 GPa for Ti-poor bulk compositions, an association of En+Wad+Rt is replaced by the

  14. Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: their impact on SiGe light emission

    Science.gov (United States)

    Lockwood, David; Wu, Xiaohua; Baribeau, Jean-Marc; Mala, Selina; Wang, Xialou; Tsybeskov, Leonid

    2016-03-01

    Fast optical interconnects together with an associated light emitter that are both compatible with conventional Si-based complementary metal-oxide- semiconductor (CMOS) integrated circuit technology is an unavoidable requirement for the next-generation microprocessors and computers. Self-assembled Si/Si1-xGex nanostructures, which can emit light at wavelengths within the important optical communication wavelength range of 1.3 - 1.55 μm, are already compatible with standard CMOS practices. However, the expected long carrier radiative lifetimes observed to date in Si and Si/Si1-xGex nanostructures have prevented the attainment of efficient light-emitting devices including the desired lasers. Thus, the engineering of Si/Si1-xGex heterostructures having a controlled composition and sharp interfaces is crucial for producing the requisite fast and efficient photoluminescence (PL) at energies in the range 0.8-0.9 eV. In this paper we assess how the nature of the interfaces between SiGe nanostructures and Si in heterostructures strongly affects carrier mobility and recombination for physical confinement in three dimensions (corresponding to the case of quantum dots), two dimensions (corresponding to quantum wires), and one dimension (corresponding to quantum wells). The interface sharpness is influenced by many factors such as growth conditions, strain, and thermal processing, which in practice can make it difficult to attain the ideal structures required. This is certainly the case for nanostructure confinement in one dimension. However, we demonstrate that axial Si/Ge nanowire (NW) heterojunctions (HJs) with a Si/Ge NW diameter in the range 50 - 120 nm produce a clear PL signal associated with band-to-band electron-hole recombination at the NW HJ that is attributed to a specific interfacial SiGe alloy composition. For three-dimensional confinement, the experiments outlined here show that two quite different Si1-xGex nanostructures incorporated into a Si0.6Ge0.4 wavy

  15. Electrical quantum standards and their role in the SI

    Science.gov (United States)

    Robinson, Ian; Georgakopoulos, Dimitrios

    2012-12-01

    realizations of voltage, resistance and current to test their consistency. Active research into this 'metrological triangle' is underway and, at present, there is no evidence to indicate a discrepancy at any level. However, work is continuing on current sources which utilize a countable flow of electrons (the electric current produced is proportional to ef, f being the operating frequency of the device), but the work has some way to go before the question of consistency can be resolved at levels approaching 1 part in 109. In this special feature, Scherer and Camarota review the state-of-the-art of metrological triangle experiments and Devoille et al report on the status of the metrological triangle experiment at the Laboratoire National de Métrologie et d'Essais (LNE), France. The availability of precise representations of the volt and the ohm based on quantum mechanics has enabled the watt balance, an apparatus which relates electrical and mechanical power, to link the kilogram to the Planck constant. This has paved the way for the proposed redefinition of the kilogram, the last artefact standard in the SI, in terms of a fixed value of the Planck constant. In the past few years a number of papers, e.g. [2, 3], have been published describing the working principles of the watt balance and the characteristics of the existing implementations of the experiment. The measurements of the principal quantities—mass, velocity, gravitational acceleration, resistance and voltage—are reasonably well documented but the ultimate precision of the apparatus depends on a number of techniques that are required to eliminate second-order effects. In this special feature, Robinson provides details of these general alignment techniques with special reference to the NPL Mark II watt balance. Acknowledgments We would like to thank the authors for supporting the special feature with their excellent contributions; the guardians of the quality of a scientific paper, the referees, for their valuable

  16. O lado de dentro da experiência: atenção a si mesmo e produção de subjetividade numa oficina de cerâmica para pessoas com deficiência visual adquirida

    Directory of Open Access Journals (Sweden)

    Virgínia Kastrup

    Full Text Available Pessoas acometidas pela perda da visão são confrontadas com a necessidade de reorganização de seu sistema cognitivo e de reinvenção de suas vidas. O objetivo deste texto é discutir os efeitos da experiência de trabalhar com cerâmica, analisando os dois lados do funcionamento da atenção de pessoas com deficiência visual adquirida: a atenção à argila e a atenção a si mesmo durante o processo de criação. Toma como referências principais os trabalhos de J. Dewey sobre experiência estética, de G. Simondon sobre o processo de individuação e de F. Varela e S. Weil sobre a atenção. O texto resulta de uma pesquisa realizada numa oficina de cerâmica do Instituto Benjamin Constant, no Rio de Janeiro. A cerâmica é analisada em suas características de maleabilidade, temporalidade lenta e imprevisibilidade. A partir do conceito de cognição inventiva, são analisados os efeitos da expressão artística na produção da subjetividade e na reinvenção do território existencial dos deficientes visuais.

  17. Experiment for a measurement of the charge radius of the proton at the S-DALINAC and investigation of the fine structure of giant resonances in {sup 28}Si, {sup 48}Ca and {sup 166}Er with the help of the wavelet analysis; Experiment zur Messung des Ladungsradius des Protons am S-DALINAC und Untersuchung der Feinstruktur von Riesenresonanzen in {sup 28}Si, {sup 48}Ca und {sup 166}Er mit Hilfe der Waveletanalyse

    Energy Technology Data Exchange (ETDEWEB)

    Pysmenetska, Inna

    2009-07-22

    The present thesis consists of two parts. In the first part a novel experimental method for the measurement of the proton root-mean-square radius at the S-DALINAC is presented. A setup based on semiconductor detectors is realized. In contrast to previous experiments it allows a simultaneous measurement of the momentum transfer dependence of the elastic electron scattering cross section. A possible suppression of the significant electron and bremsstrahlung background observed in a test experiment was investigated with the help of different methods, such as {delta}E-E telescopes, the time of flight method with a pulsed beam and pulse shape discrimination. The combination of these methods allows a reduction of the background at all scattering angles, which should allow a successful measurement. The response of the detector system was studied with the help of Monte-Carlo simulations with an emphasis on the dependence of the expected accuracy of different parameters. The second part of this work describes an investigation of the fine structure of giant resonances in {sup 28}Si, {sup 48}Ca and {sup 166}Er with the help of a wavelet analysis. The discrete wavelet transform was used for a background determination in spectra of the iso vector E1 and the M2 giant resonances in {sup 48}Ca. This allows the extraction of 1{sup -} und 2{sup -} level densities in the excitation energy region of the respective resonances with the help of a fluctuation analysis. A fluctuation analysis of the fine structure of the isoscalar E2 resonance in {sup 166}Er allows the extraction of the coherent widths of the 2{sup +} states. In the excitation energy region E{sub x}=10-16 MeV widths between 30 and 80 eV are found. The fine structure of the giant resonances is furthermore specified by characteristic scales. In this thesis scales in {sup 28}Si and {sup 48}Ca are extracted with the help of the above mentioned wavelet transform. In {sup 28}Si the isovector E1 and isoscalar E2 resonances were

  18. Antioxidant migration resistance of SiOx layer in SiOx/PLA coated film.

    Science.gov (United States)

    Huang, Chongxing; Zhao, Yuan; Su, Hongxia; Bei, Ronghua

    2018-02-01

    As novel materials for food contact packaging, inorganic silicon oxide (SiO x ) films are high barrier property materials that have been developed rapidly and have attracted the attention of many manufacturers. For the safe use of SiO x films for food packaging it is vital to study the interaction between SiO x layers and food contaminants, as well as the function of a SiO x barrier layer in antioxidant migration resistance. In this study, we deposited a SiO x layer on polylactic acid (PLA)-based films to prepare SiO x /PLA coated films by plasma-enhanced chemical vapour deposition. Additionally, we compared PLA-based films and SiO x /PLA coated films in terms of the migration of different antioxidants (e.g. t-butylhydroquinone [TBHQ], butylated hydroxyanisole [BHA], and butylated hydroxytoluene [BHT]) via specific migration experiments and then investigated the effects of a SiO x layer on antioxidant migration under different conditions. The results indicate that antioxidant migration from SiO x /PLA coated films is similar to that for PLA-based films: with increase of temperature, decrease of food simulant polarity, and increase of single-sided contact time, the antioxidant migration rate and amount in SiO x /PLA coated films increase. The SiO x barrier layer significantly reduced the amount of migration of antioxidants with small and similar molecular weights and similar physical and chemical properties, while the degree of migration blocking was not significantly different among the studied antioxidants. However, the migration was affected by temperature and food simulant. Depending on the food simulants considered, the migration amount in SiO x /PLA coated films was reduced compared with that in PLA-based films by 42-46%, 44-47%, and 44-46% for TBHQ, BHA, and BHT, respectively.

  19. Self-learning kinetic Monte Carlo simulations of diffusion in ferromagnetic α -Fe–Si alloys

    Energy Technology Data Exchange (ETDEWEB)

    Nandipati, Giridhar; Jiang, Xiujuan; Vemuri, Rama S.; Mathaudhu, Suveen; Rohatgi, Aashish

    2017-12-19

    Diffusion in α-Fe-Si alloys is studied using AKSOME, an on-lattice self-learning KMC code, in the ferromagnetic state. Si diffusivity in the α-Fe matrix were obtained with and without the magnetic disorder in various temperature ranges. In addition we studied vacancy diffusivity in ferromagnetic α-Fe at various Si concentrations up to 12.5at.% in the temperature range of 350–550 K. The results were compared with available experimental and theoretical values in the literature. Local Si-atom dependent activation energies for vacancy hops were calculated using a broken-model and were stored in a database. The migration barrier and prefactors for Si-diffusivity were found to be in reasonable agreement with available modeling results in the literature. Magnetic disorder has a larger effect on the prefactor than on the migration barrier. Prefactor was approximately an order of magnitude and the migration barrier a tenth of an electron-volt higher with magnetic disorder when compared to a fully ferromagnetic ordered state. In addition, the correlation between various have a larger effect on the Si-diffusivity extracted in various temperature range than the magnetic disorder. In the case of vacancy diffusivity, the migration barrier more or less remained constant while the prefactor decreased with increasing Si concentration in the disordered or A2-phase of Fe-Si alloy. Important vacancy-Si/Fe atom exchange processes and their activation barriers were also identified and discuss the effect of energetics on the formation of ordered phases in Fe-Si alloys.

  20. Study on the preparation of the SiCp/Al-20Si-3Cu functionally graded material using spray deposition

    International Nuclear Information System (INIS)

    Su, B.; Yan, H.G.; Chen, G.; Shi, J.L.; Chen, J.H.; Zeng, P.L.

    2010-01-01

    Research highlights: → The SiCp/Al-20Si-3Cu functionally gradient material (FGM) was successfully prepared via the spray deposition technique. → The SiCp/Al-20Si-3Cu functionally gradient material (FGM) was successfully prepared via the spray deposition technique. → In the experimental setup, the novel devices play an important role in adjusting the output of SiCp to prepare the FGM. → The experiment results reveal that the SiCp weight fraction of the as-deposited preform from the top to the bottom ranges almost continuously from 0% to 30%. → The fraction of SiC particles has no obvious influence on the phase constitutions of the SiCp/Al-20Si-3Cu FGM. - Abstract: The SiCp/Al-20Si-3Cu functionally gradient material (FGMs) was successfully prepared via the spray deposition technique accompanied with an automatic control system. The results reveal that the SiCp weight fraction of the as-deposited preform from the top to the bottom ranges almost continuously from 0% to 30%. The part with the higher SiCp weight fraction exhibits a relatively smaller density than that with the lower SiCp weight fraction. However, the microhardness and the porosity increase with the increasing SiCp weight fraction in the as-deposited preform. The X-ray diffraction results exhibit that the secondary phases in the regions with the different amount of SiC particles are the same such as Al 2 Cu and AlCuMg. The spray deposition technology is promising to produce a wide range of other FGMs.

  1. Commissioning Results of the Upgraded Neutralized Drift Compression Experiment

    International Nuclear Information System (INIS)

    Lidia, S.M.; Roy, P.K.; Seidl, P.A.; Waldron, W.L.; Gilson, E.P.

    2009-01-01

    Recent changes to the NDCX beamline offer the promise of higher charge compressed bunches (>15nC), with correspondingly large intensities (>500kW/cm 2 ), delivered to the target plane for ion-beam driven warm dense matter experiments. We report on commissioning results of the upgraded NDCX beamline that includes a new induction bunching module with approximately twice the volt-seconds and greater tuning flexibility, combined with a longer neutralized drift compression channel.

  2. Oficina de vivência corporal: movimento, reflexão e apropriação de si mesmo Taller de vivencia corporal: movimiento, reflexión y apropriación de si mismo Corporal experience worshop: movement, reflection and self appropriation

    Directory of Open Access Journals (Sweden)

    José Roberto da Silva Brêtas

    2001-09-01

    Full Text Available O presente artigo aborda uma atividade inovadora no campo de ensino na área de Enfermagem. Esta atividade, teórica - vivencial, que chamamos de "Oficina de vivência corporal", tem como propostas: promover a consciência corporal; a apreensão de fundamentos sobre corporalidade; e fomentar a reflexão sobre si e o corpo do "outro ", que é sujeito de cuidados em enfermagem. É desenvolvido com alunos do Primeiro ano do Curso de Graduação em Enfermagem - Universidade Federal de São Paulo - UNIFESPI EPM. Apresenta uma pesquisa descritiva, onde o fenômeno é descrito e explicado . Propõe-se investigar aspectos relativos a experiência de 202 alunos que participaram das atividades desenvolvidas nas oficinas, durante os anos de 1997, 1998 e 1999.El presente artículo aborda una actividad inovadora en el campo de ensenanza en la área de Enfermeria. Esta actividad, teórica-vivencial, que llamamos de "Taller del Vivencia Corporal", tiene como propuestas: promover la consciencia corporal; la aprehensión de fundamentos sobre corporalidades; e incentivar la reflexión sobre uno y el cuerpo del "outro" que es sujeto de cuidados en Enfermeria. Es desarrollado com alumnos del Primer ano del Curso de Graduación en Enfermeria - Universidad Federal de São Paulo - UNIFESP/EPM. Presenta una encuesta descriptiva adonde el fenómeno es descripto y explicado. Proponese averiguar aspectos relativos a las experiencias de 202 alumnos que participaran de las actividades desarrolladas en los talleres durante anos de 1997, 1998 y 1999.The present study approaches an innovative activity in the Nursing teaching area. This activity, theoretical-experiential, known as the "Corporal Experience Workshop" is intended to promote body awareness, understand the fundamentals related to corporality, and improve the reflections about the own self and the "other's" body when undergoing nursing care. The investigation was carried out with first grade undergraduation Nursing

  3. NIMROD Simulations of the HIT-SI and HIT-SI3 Devices

    Science.gov (United States)

    Morgan, Kyle; Jarboe, Tom; Hossack, Aaron; Chandra, Rian; Everson, Chris

    2017-10-01

    The Helicity Injected Torus with Steady Inductive helicity injection (HIT-SI) experiment uses a set of inductively driven helicity injectors to apply non-axisymmetric current drive on the edge of the plasma, driving an axisymmetric spheromak equilibrium in a central confinement volume. Significant improvements have been made to extended MHD modeling of HIT-SI, with both the resolution of disagreement at high injector frequencies in HIT-SI in addition to successes with the new upgraded HIT-SI3 device. Previous numerical studies of HIT-SI, using a zero-beta eMHD model, focused on operations with a drive frequency of 14.5 kHz, and found reduced agreement with both the magnetic profile and current amplification at higher frequencies (30-70 kHz). HIT-SI3 has three helicity injectors which are able to operate with different mode structures of perturbations through the different relative temporal phasing of the injectors. Simulations that allow for pressure gradients have been performed in the parameter regimes of both devices using the NIMROD code and show improved agreement with experimental results, most notably capturing the observed Shafranov-shift due to increased beta observed at higher finj in HIT-SI and the variety of toroidal perturbation spectra available in HIT-SI3. This material is based upon work supported by the U.S. Department of Energy, Office of Science, Office of Fusion Energy Sciences under Award Number DE-FG02- 96ER54361.

  4. La « grande révolte arabe » du xxie siècle : considérations sur le bouleversement en cours dans l’espace arabophone

    OpenAIRE

    Achcar, Gilbert

    2015-01-01

    1. Facteurs socio-économiques de l’explosion 2. Facteurs politiques et géopolitiques 3. Un processus révolutionnaire décliné selon plusieurs modes étatiques et sociaux 4. Bilan d’étape et perspectives politiques et géopolitiques Une question se pose d’emblée lorsque l’on tente d’analyser les événements en cours dans la région arabe, celle de la façon de les désigner. La formule la plus satisfaisante est « processus révolutionnaire » : elle permet de mettre l’accent sur le potentiel du soulève...

  5. SI units in radiology

    Energy Technology Data Exchange (ETDEWEB)

    Iyer, P S [Bhabha Atomic Research Centre, Bombay (India). Div. of Radiation Protection

    1978-11-01

    The proposal of the International Commission on Radiation Units and Measurements that the special units of radiation and radioactivity-roentgen, rad, rem and curie-be replaced by the International System (SI) of Units has been accepted by international bodies. This paper reviews the resons for introducing the new units and their features. The relation between the special units and the corresponding SI units is discussed with examples. In spite of anticipated difficulties, the commission recommends a smooth and efficient changeover to the SI units in ten years.

  6. A Dust Grain Photoemission Experiment

    Science.gov (United States)

    Venturini, C. C.; Spann, J. F., Jr.; Abbas, M. M.; Comfort, R. H.

    2000-01-01

    A laboratory experiment has been developed at Marshall Space Flight Center to study the interaction of micron-sized particles with plasmas and FUV radiation. The intent is to investigate the conditions under which particles of various compositions and sizes become charged, or discharged, while exposed to an electron beam and/or UV radiation. This experiment uses a unique laboratory where a single charged micron size particle is suspended in a quadrupole trap and then subjected to a controlled environment. Tests are performed using different materials and sizes, ranging from 10 microns to 1 micron, to determine the particle's charge while being subjected to an electron beam and /or UV radiation. The focus of this presentation will be on preliminary results from UV photoemission tests, but past results from electron beam, secondary electron emission tests will also be highlighted. A monochromator is used to spectrally resolve UV in the 120 nm to 300 nm range. This enables photoemission measurements as a function of wavelength. Electron beam tests are conducted using I to 3 micron sized aluminum oxide particles subjected to energies between 100 eV to 3 KeV. It was found that for both positive and negative particles the potential tended toward neutrality over time with possible equilibrium potentials between -0.8 Volts and 0.8 Volts.

  7. Removal of C and SiC from Si and FeSi during ladle refining and solidification

    Energy Technology Data Exchange (ETDEWEB)

    Klevan, Ole Svein

    1997-12-31

    The utilization of solar energy by means of solar cells requires the Si to be very pure. The purity of Si is important for other applications as well. This thesis mainly studies the total removal of carbon from silicon and ferrosilicon. The decarburization includes removal of SiC particles by stirring and during casting in addition to reduction of dissolved carbon by gas purging. It was found that for three commercial qualities of FeSi75, Refined, Gransil, and Standard lumpy, the refined quality is lowest in carbon, followed by Gransil and Standard. A decarburization model was developed that shows the carbon removal by oxidation of dissolved carbon to be a slow process at atmospheric pressure. Gas stirring experiments have shown that silicon carbide particles are removed by transfer to the ladle wall. The casting method of ferrosilicon has a strong influence on the final total carbon content in the commercial alloy. Shipped refined FeSi contains about 100 ppm total carbon, while the molten alloy contains roughly 200 ppm. The total carbon out of the FeSi-furnace is about 1000 ppm. It is suggested that low values of carbon could be obtained on an industrial scale by injection of silica combined with the use of vacuum. Also, the casting system could be designed to give low carbon in part of the product. 122 refs., 50 figs., 24 tabs.

  8. Initial assessment of environmental effects on SiC/SiC composites in helium-cooled nuclear systems

    Energy Technology Data Exchange (ETDEWEB)

    Contescu, Cristian I [ORNL

    2013-09-01

    This report summarized the information available in the literature on the chemical reactivity of SiC/SiC composites and of their components in contact with the helium coolant used in HTGR, VHTR and GFR designs. In normal operation conditions, ultra-high purity helium will have chemically controlled impurities (water, oxygen, carbon dioxide, carbon monoxide, methane, hydrogen) that will create a slightly oxidizing gas environment. Little is known from direct experiments on the reactivity of third generation (nuclear grade) SiC/SiC composites in contact with low concentrations of water or oxygen in inert gas, at high temperature. However, there is ample information about the oxidation in dry and moist air of SiC/SiC composites at high temperatures. This information is reviewed first in the next chapters. The emphasis is places on the improvement in material oxidation, thermal, and mechanical properties during three stages of development of SiC fibers and at least two stages of development of the fiber/matrix interphase. The chemical stability of SiC/SiC composites in contact with oxygen or steam at temperatures that may develop in off-normal reactor conditions supports the conclusion that most advanced composites (also known as nuclear grade SiC/SiC composites) have the chemical resistance that would allow them maintain mechanical properties at temperatures up to 1200 1300 oC in the extreme conditions of an air or water ingress accident scenario. Further research is needed to assess the long-term stability of advanced SiC/SiC composites in inert gas (helium) in presence of very low concentrations (traces) of water and oxygen at the temperatures of normal operation of helium-cooled reactors. Another aspect that needs to be investigated is the effect of fast neutron irradiation on the oxidation stability of advanced SiC/SiC composites in normal operation conditions.

  9. Microstructure and Mechanical Property of SiCf/SiC and Cf/SiC Composites

    International Nuclear Information System (INIS)

    Lee, S P; Cho, K S; Lee, H U; Lee, J K; Bae, D S; Byun, J H

    2011-01-01

    The mechanical properties of SiC based composites reinforced with different types of fabrics have been investigated, in conjunction with the detailed analyses of their microstructures. The thermal shock properties of SiC f /SiC composites were also examined. All composites showed a dense morphology in the matrix region. Carbon coated PW-SiC f /SiC composites had a good fracture energy, even if their strength was lower than that of PW-C f /SiC composites. SiC f /SiC composites represented a great reduction of flexural strength at the thermal shock temperature difference of 300 deg. C.

  10. Evaporative evolution of a Na–Cl–NO3–K–Ca–SO4–Mg–Si brine at 95°C: Experiments and modeling relevant to Yucca Mountain, Nevada

    Directory of Open Access Journals (Sweden)

    Carroll Susan

    2005-06-01

    Full Text Available A synthetic Topopah Spring Tuff water representative of one type of pore water at Yucca Mountain, NV was evaporated at 95°C in a series of experiments to determine the geochemical controls for brines that may form on, and possibly impact upon the long-term integrity of waste containers and drip shields at the designated high-level, nuclear-waste repository. Solution chemistry, condensed vapor chemistry, and precipitate mineralogy were used to identify important chemical divides and to validate geochemical calculations of evaporating water chemistry using a high temperature Pitzer thermodynamic database. The water evolved toward a complex "sulfate type" brine that contained about 45 mol % Na, 40 mol % Cl, 9 mol % NO3, 5 mol % K, and less than 1 mol % each of SO4, Ca, Mg, ∑CO2(aq, F, and Si. All measured ions in the condensed vapor phase were below detection limits. The mineral precipitates identified were halite, anhydrite, bassanite, niter, and nitratine. Trends in the solution composition and identification of CaSO4 solids suggest that fluorite, carbonate, sulfate, and magnesium-silicate precipitation control the aqueous solution composition of sulfate type waters by removing fluoride, calcium, and magnesium during the early stages of evaporation. In most cases, the high temperature Pitzer database, used by EQ3/6 geochemical code, sufficiently predicts water composition and mineral precipitation during evaporation. Predicted solution compositions are generally within a factor of 2 of the experimental values. The model predicts that sepiolite, bassanite, amorphous silica, calcite, halite, and brucite are the solubility controlling mineral phases.

  11. Effect of deep levels of radiation-induced defects in silicon γ-irradiated Al-V-n-Si structures characteristics

    International Nuclear Information System (INIS)

    Buzaneva, E.V.; Vdovichenko, A.D.; Kuznetsov, G.V.; Muntyan, Yu.G.

    1985-01-01

    The effect of high energy γ-quanta irradiation on the mechanism of current transmission in Al-V-N-Si structures employed in Schottky barrier instruments has been investigated. Before irradiation the structures have been annealed in the nitrogen atmosphere at T=500 deg C. The samples have been γ-irradiated on the side of the metall film at T=20 deg C. The irradiation spectrum is continuous, maximum γ-quanta energy 50 MeV, medium one is 20 MeV. The integral flux of γ-quanta, PHIsub(γ) varied from 10 7 to 10 13 quantum/cm -2 . The volt-ampere and volt-farad characteristics have been measred. It is shown that variation of the main electrophysical characteristics of the Al-V-nSi structures upon γ-irradiation is due to deep levels of radiation defects arising in silicon with the energetic position Esub(c)-E=0.38-0.4 eV and Esub(v)+Esub(2)=0.23-0.25 → β, where Esub(c), Esub(v) are energies for the conduction band bottom and the valence band ceiling. In the 77-293 K temperature range the determining range the determining effect on current mission mechanism in irradiated structures is exerted by resonance electron tunnelling with participation of a level with the Esub(c)-Esub(1)=0.38-0.4 eV

  12. Strain distribution analysis in Si/SiGe line structures for CMOS technology using Raman spectroscopy

    International Nuclear Information System (INIS)

    Hecker, M; Roelke, M; Hermann, P; Zschech, E; Vartanian, V

    2010-01-01

    Strained silicon underneath the field-effect transistor gate increases significantly the charge carrier mobility and thus improves the performance of leading-edge Complementary Metal Oxide Semiconductor (CMOS) devices. For better understanding of the structure-strain relationship on the nanoscale and for optimization of device structures, the measurement of the local strain state has become essential. Raman spectroscopy is used in the present investigation to analyze the strain distribution in and close to silicon/embedded silicon-germanium (SiGe) line structures in conjunction with strain modeling applying finite element analysis. Both experimental results and modeling indicate the impact of geometry on the stress state. An increase of compressive stress within the Si lines is obtained for increasing SiGe line widths and decreasing Si line widths. The stress state within the Si lines is shown to be a mixed one deviating from a pure uniaxial state. Underneath the SiGe cavities, the presence of a tensile stress was observed. To investigate a procedure to scale down the spatial resolution of the Raman measurements, tip-enhanced Raman scattering experiments have been performed on free-standing SiGe lines with 100nm line width and line distance. The results show superior resolution and strain information not attainable in conventional Raman scans.

  13. Interfacial characterization of CVI-SiC/SiC composites

    International Nuclear Information System (INIS)

    Yang, W.; Kohyama, A.; Noda, T.; Katoh, Y.; Hinoki, T.; Araki, H.; Yu, J.

    2002-01-01

    The mechanical properties of the interfaces of two families of chemical vapor infiltration SiC/SiC composites, advanced Tyranno-SA and Hi-Nicalon fibers reinforced SiC/SiC composites with various carbon and SiC/C interlayers, were investigated by single fiber push-out/push-back tests. Interfacial debonding and fibers sliding mainly occurred adjacent to the first carbon layer on the fibers. The interfacial debonding strengths and frictional stresses for both Tyranno-SA/SiC and Hi-Nicalon/SiC composites were correlated with the first carbon layer thickness. Tyranno-SA/SiC composites exhibited much larger interfacial frictional stresses compared to Hi-Nicalon/SiC composites. This was assumed to be mainly contributed by the rather rough surface of the Tyranno-SA fiber

  14. Microwave joining of SiC ceramics and composites

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, I.; Silberglitt, R.; Tian, Y.L. [FM Technologies, Inc., Fairfax, VA (United States); Katz, J.D. [Los Alamos National Lab., NM (United States)

    1997-04-01

    Potential applications of SiC include components for advanced turbine engines, tube assemblies for radiant burners and petrochemical processing and heat exchangers for high efficiency electric power generation systems. Reliable methods for joining SiC are required in order to cost-effectively fabricate components for these applications from commercially available shapes and sizes. This manuscript reports the results of microwave joining experiments performed using two different types of SiC materials. The first were on reaction bonded SiC, and produced joints with fracture toughness equal to or greater than that of the base material over an extended range of joining temperatures. The second were on continuous fiber-reinforced SiC/SiC composite materials, which were successfully joined with a commercial active brazing alloy, as well as by using a polymer precursor.

  15. Operation and Modulation of H7 Current Source Inverter with Hybrid SiC and Si Semiconductor Switches

    DEFF Research Database (Denmark)

    Wang, Weiqi; Gao, Feng; Yang, Yongheng

    2018-01-01

    This paper proposes an H7 current source inverter (CSI) consisting of a single parallel-connected silicon carbide (SiC) switch and a traditional silicon (Si) H6 CSI. The proposed H7 CSI takes the advantages of the SiC switch to maintain high efficiency, while significantly increasing the switching...... as an all-SiC-switch converter in terms of high performance and high efficiency with reduced DC inductance. It provides a cost-effective solution to addressing the efficiency issue of conventional CSI systems. Simulations and experiments are performed to validate the effectiveness of the proposed H7 CSI...

  16. Sub-barrier fusion of Si+Si systems

    Science.gov (United States)

    Colucci, G.; Montagnoli, G.; Stefanini, A. M.; Bourgin, D.; Čolović, P.; Corradi, L.; Courtin, S.; Faggian, M.; Fioretto, E.; Galtarossa, F.; Goasduff, A.; Haas, F.; Mazzocco, M.; Scarlassara, F.; Stefanini, C.; Strano, E.; Urbani, M.; Szilner, S.; Zhang, G. L.

    2017-11-01

    The near- and sub-barrier fusion excitation function has been measured for the system 30Si+30Si at the Laboratori Nazionali di Legnaro of INFN, using the 30Si beam of the XTU Tandem accelerator in the energy range 47 - 90 MeV. A set-up based on a beam electrostatic deflector was used for detecting fusion evaporation residues. The measured cross sections have been compared to previous data on 28Si+28Si and Coupled Channels (CC) calculations have been performed using M3Y+repulsion and Woods-Saxon potentials, where the lowlying 2+ and 3- excitations have been included. A weak imaginary potential was found to be necessary to reproduce the low energy 28Si+28Si data. This probably simulates the effect of the oblate deformation of this nucleus. On the contrary, 30Si is a spherical nucleus, 30Si+30Si is nicely fit by CC calculations and no imaginary potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the two symmetric systems highlights their different low energy trend. A difference can also be noted in the two barrier distributions, where the high-energy peak present in 28Si+28Si is not observed for 30Si+30Si, probably due to the weaker couplings in last case.

  17. Sub-barrier fusion of Si+Si systems

    Directory of Open Access Journals (Sweden)

    Colucci G.

    2017-01-01

    Full Text Available The near- and sub-barrier fusion excitation function has been measured for the system 30Si+30Si at the Laboratori Nazionali di Legnaro of INFN, using the 30Si beam of the XTU Tandem accelerator in the energy range 47 - 90 MeV. A set-up based on a beam electrostatic deflector was used for detecting fusion evaporation residues. The measured cross sections have been compared to previous data on 28Si+28Si and Coupled Channels (CC calculations have been performed using M3Y+repulsion and Woods-Saxon potentials, where the lowlying 2+ and 3− excitations have been included. A weak imaginary potential was found to be necessary to reproduce the low energy 28Si+28Si data. This probably simulates the effect of the oblate deformation of this nucleus. On the contrary, 30Si is a spherical nucleus, 30Si+30Si is nicely fit by CC calculations and no imaginary potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the two symmetric systems highlights their different low energy trend. A difference can also be noted in the two barrier distributions, where the high-energy peak present in 28Si+28Si is not observed for 30Si+30Si, probably due to the weaker couplings in last case.

  18. First-principles study of the Pd–Si system and Pd(001)/SiC(001) hetero-structure

    Energy Technology Data Exchange (ETDEWEB)

    Turchi, P.E.A. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Ivashchenko, V.I. [National Academy of Sciences of Ukraine (NASU), Kiev (Ukraine)

    2014-11-01

    First-principles molecular dynamics simulations of the Pd(001)/3C–SiC(001) nano-layered structure were carried out at different temperatures ranging from 300 to 2100 K. Various PdSi (Pnma, Fm3m, P6m2, Pm3m), Pd2Si (P6⁻2m, P63/mmc, P3m1, P3⁻1m) and Pd3Si (Pnma, P6322, Pm3m, I4/mmm) structures under pressure were studied to identify the structure of the Pd/Si and Pd/C interfaces in the Pd/SiC systems at high temperatures. It was found that a large atomic mixing at the Pd/Si interface occurred at 1500–1800 K, whereas the Pd/C interface remained sharp even at the highest temperature of 2100 K. At the Pd/C interface, voids and a graphite-like clustering were detected. Palladium and silicon atoms interact at the Pd/Si interface to mostly form C22-Pd2Si and D011-Pd3Si fragments, in agreement with experiment.

  19. Photoluminescence of Er-doped Si-SiO2 and Al-Si-SiO2 sputtered thin films

    International Nuclear Information System (INIS)

    Rozo, C.; Fonseca, L.F.; Jaque, D.; Sole, J.Garcia

    2008-01-01

    Er-doped Si-SiO 2 and Al-Si-SiO 2 films have been deposited by rf-sputtering being annealed afterwards. Annealing behavior of the Er 3+ : 4 I 13/2 → 4 I 15/2 emission of Er-doped Si-SiO 2 yields a maximum intensity for annealing at 700-800 deg. C. 4 I 13/2 → 4 I 15/2 peak emission for Er-doped Al-Si-SiO 2 at 1525 nm is shifted from that for Er-doped Si-SiO 2 at 1530 nm and the bandwidth increases from 29 to 42 nm. 4 I 13/2 → 4 I 15/2 emission decays present a fast decaying component related to Er ions coupled to Si nanoparticles, defects, or other ions, and a slow decaying component related to isolated Er ions. Excitation wavelength dependence and excitation power dependence for the 4 I 13/2 → 4 I 15/2 emission correspond with energy transfer from Si nanoparticles. Populating of the 4 I 11/2 level in Er-doped Si-SiO 2 involves branching and energy transfer upconversion involving two or more Er ions. Addition of Al reduces the populating of this level to an energy transfer upconversion involving two ions

  20. SiCloud

    DEFF Research Database (Denmark)

    Jiang, Cathy Y.; Devore, Peter T.S.; Lonappan, Cejo Konuparamban

    2017-01-01

    The silicon photonics industry is projected to be a multibillion dollar industry driven by the growth of data centers. In this work, we present an interactive online tool for silicon photonics. Silicon Photonics Cloud (SiCCloud.org) is an easy to use instructional tool for optical properties...

  1. SI: The Stellar Imager

    Science.gov (United States)

    Carpenter, Kenneth G.; Schrijver, Carolus J.; Karovska, Margarita

    2006-01-01

    The ultra-sharp images of the Stellar Imager (SI) will revolutionize our view of many dynamic astrophysical processes: The 0.1 milliarcsec resolution of this deep-space telescope will transform point sources into extended sources, and simple snapshots into spellbinding evolving views. SI s science focuses on the role of magnetism in the Universe, particularly on magnetic activity on the surfaces of stars like the Sun. SI s prime goal is to enable long-term forecasting of solar activity and the space weather that it drives in support of the Living With a Star program in the Exploration Era by imaging a sample of magnetically active stars with enough resolution to map their evolving dynamo patterns and their internal flows. By exploring the Universe at ultra-high resolution, SI will also revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magnetohydrodynamically controlled structures and processes in the Universe.

  2. U-Mo/Al-Si interaction: Influence of Si concentration

    International Nuclear Information System (INIS)

    Allenou, J.; Palancher, H.; Iltis, X.; Cornen, M.; Tougait, O.; Tucoulou, R.; Welcomme, E.; Martin, Ph.; Valot, C.; Charollais, F.; Anselmet, M.C.; Lemoine, P.

    2010-01-01

    Within the framework of the development of low enriched nuclear fuels for research reactors, U-Mo/Al is the most promising option that has however to be optimised. Indeed at the U-Mo/Al interfaces between U-Mo particles and the Al matrix, an interaction layer grows under irradiation inducing an unacceptable fuel swelling. Adding silicon in limited content into the Al matrix has clearly improved the in-pile fuel behaviour. This breakthrough is attributed to an U-Mo/Al-Si protective layer around U-Mo particles appeared during fuel manufacturing. In this work, the evolution of the microstructure and composition of this protective layer with increasing Si concentrations in the Al matrix has been investigated. Conclusions are based on the characterization at the micrometer scale (X-ray diffraction and energy dispersive spectroscopy) of U-Mo7/Al-Si diffusion couples obtained by thermal annealing at 450 deg. C. Two types of interaction layers have been evidenced depending on the Si content in the Al-Si alloy: the threshold value is found at about 5 wt.% but obviously evolves with temperature. It has been shown that for Si concentrations ranging from 2 to 10 wt.%, the U-Mo7/Al-Si interaction is bi-layered and the Si-rich part is located close to the Al-Si for low Si concentrations (below 5 wt.%) and close to the U-Mo for higher Si concentrations. For Si weight fraction in the Al alloy lower than 5 wt.%, the Si-rich sub-layer (close to Al-Si) consists of U(Al, Si) 3 + UMo 2 Al 20 , when the other sub-layer (close to U-Mo) is silicon free and made of UAl 3 and U 6 Mo 4 Al 43 . For Si weight concentrations above 5 wt.%, the Si-rich part becomes U 3 (Si, Al) 5 + U(Al, Si) 3 (close to U-Mo) and the other sub-layer (close to Al-Si) consists of U(Al, Si) 3 + UMo 2 Al 20 . On the basis of these results and of a literature survey, a scheme is proposed to explain the formation of different types of ILs between U-Mo and Al-Si alloys (i.e. different protective layers).

  3. Nonvolatile field effect transistors based on protons and Si/SiO2Si structures

    International Nuclear Information System (INIS)

    Warren, W.L.; Vanheusden, K.; Fleetwood, D.M.; Schwank, J.R.; Winokur, P.S.; Knoll, M.G.; Devine, R.A.B.

    1997-01-01

    Recently, the authors have demonstrated that annealing Si/SiO 2 /Si structures in a hydrogen containing ambient introduces mobile H + ions into the buried SiO 2 layer. Changes in the H + spatial distribution within the SiO 2 layer were electrically monitored by current-voltage (I-V) measurements. The ability to directly probe reversible protonic motion in Si/SiO 2 /Si structures makes this an exemplar system to explore the physics and chemistry of hydrogen in the technologically relevant Si/SiO 2 structure. In this work, they illustrate that this effect can be used as the basis for a programmable nonvolatile field effect transistor (NVFET) memory that may compete with other Si-based memory devices. The power of this novel device is its simplicity; it is based upon standard Si/SiO 2 /Si technology and forming gas annealing, a common treatment used in integrated circuit processing. They also briefly discuss the effects of radiation on its retention properties

  4. Gd-Ni-Si system

    International Nuclear Information System (INIS)

    Bodak, O.I.; Shvets, A.F.

    1983-01-01

    By X-ray phase analysis method isothermal cross section of phase diagram of the Gd-Ni-Si system at 870 K is studied. The existence of nine previously known compounds (GdNisub(6.72)Sisub(6.28), GdNi 10 Si 2 , GdNi 5 Si 3 , GdNi 4 Si, GdNi 2 Si 2 , GdNiSi 3 , GdNiSi 2 , Gd 3 Ni 6 Si 2 and GdNiSi) is confirmed and three new compounds (GdNisub(0.2)Sisub(1.8), Gdsub(2)Nisub(1-0.8)Sisub(1-1.2), Gd 5 NiSi 4 ) are found. On the base of Gd 2 Si 3 compound up to 0.15 at. Ni fractions, an interstitial solid solution is formed up to 0.25 at Ni fractions dissolution continues of substitution type. The Gd-Ni-Si system is similar to the Y-Ni-Si system

  5. Si-to-Si wafer bonding using evaporated glass

    DEFF Research Database (Denmark)

    Reus, Roger De; Lindahl, M.

    1997-01-01

    Anodic bonding of Si to Si four inch wafers using evaporated glass was performed in air at temperatures ranging from 300°C to 450°C. Although annealing of Si/glass structures around 340°C for 15 minutes eliminates stress, the bonded wafer pairs exhibit compressive stress. Pull testing revealed...

  6. Oblique roughness replication in strained SiGe/Si multilayers

    NARCIS (Netherlands)

    Holy, V.; Darhuber, A.A.; Stangl, J.; Bauer, G.; Nützel, J.-F.; Abstreiter, G.

    1998-01-01

    The replication of the interface roughness in SiGe/Si multilayers grown on miscut Si(001) substrates has been studied by means of x-ray reflectivity reciprocal space mapping. The interface profiles were found to be highly correlated and the direction of the maximal replication was inclined with

  7. Applications of Si/SiGe heterostructures to CMOS devices

    International Nuclear Information System (INIS)

    Sidek, R.M.

    1999-03-01

    For more than two decades, advances in MOSFETs used in CMOS VLSI applications have been made through scaling to ever smaller dimensions for higher packing density, faster circuit speed and lower power dissipation. As scaling now approaches nanometer regime, the challenge for further scaling becomes greater in terms of technology as well as device reliability. This work presents an alternative approach whereby non-selectively grown Si/SiGe heterostructure system is used to improve device performance or to relax the technological challenge. SiGe is considered to be of great potential because of its promising properties and its compatibility with Si, the present mainstream material in microelectronics. The advantages of introducing strained SiGe in CMOS technology are examined through two types of device structure. A novel structure has been fabricated in which strained SiGe is incorporated in the source/drain of P-MOSFETs. Several advantages of the Si/SiGe source/drain P-MOSFETs over Si devices are experimentally, demonstrated for the first time. These include reduction in off-state leakage and punchthrough susceptibility, degradation of parasitic bipolar transistor (PBT) action, suppression of CMOS latchup and suppression of PBT-induced breakdown. The improvements due to the Si/SiGe heterojunction are supported by numerical simulations. The second device structure makes use of Si/SiGe heterostructure as a buried channel to enhance the hole mobility of P-MOSFETs. The increase in the hole mobility will benefit the circuit speed and device packing density. Novel fabrication processes have been developed to integrate non-selective Si/SiGe MBE layers into self-aligned PMOS and CMOS processes based on Si substrate. Low temperature processes have been employed including the use of low-pressure chemical vapor deposition oxide and plasma anodic oxide. Low field mobilities, μ 0 are extracted from the transfer characteristics, Id-Vg of SiGe channel P-MOSFETs with various Ge

  8. Electronic states at Si-SiO2 interface introduced by implantation of Si in thermal SiO2

    International Nuclear Information System (INIS)

    Kalnitsky, A.; Poindexter, E.H.; Caplan, P.J.

    1990-01-01

    Interface traps due to excess Si introduced into the Si-SiO 2 system by ion implantation are investigated. Implanted oxides are shown to have interface traps at or slightly above the Si conduction band edge with densities proportional to the density of off-stoichiometric Si at the Si-SiO 2 interface. Diluted oxygen annealing is shown to result in physical separation of interface traps and equilibrium substrate electrons, demonstrating that ''interface'' states are located within a 0.5 nm thick layer of SiO 2 . Possible charge trapping mechanisms are discussed and the effect of these traps on MOS transistor characteristics is described using a sheet charge model. (author)

  9. Addimer diffusions on Si(100)

    International Nuclear Information System (INIS)

    Lee, Gun Do; Wang, C. Z.; Lu, Z. Y.; Ho, K. M.

    1999-01-01

    The diffusion pathways along the trough and between the trough and the dimer row on the Si(100) surface are investigated by tight-binding molecular dynamics calculations using the environment dependent tight-binding silicon potential and by ab initio calculations using the Car-Parrinello method. The studies discover new diffusion pathways consisting of rotation of addimer. The calculated energy barrier are in excellent agreement with experiment. The rotational diffusion pathway between the trough and the dimer row is much more energetically favorable than other diffusion pathways by parallel and perpendicular addimer. The new pathway along the trough is nearly same as the energy barrier of the diffusion pathway by dissociation of the addimer

  10. Reliability implications of defects in high temperature annealed Si/SiO2/Si structures

    International Nuclear Information System (INIS)

    Warren, W.L.; Fleetwood, D.M.; Shaneyfelt, M.R.; Winokur, P.S.; Devine, R.A.B.; Mathiot, D.; Wilson, I.H.; Xu, J.B.

    1994-01-01

    High-temperature post-oxidation annealing of poly-Si/SiO 2 /Si structures such as metal-oxide-semiconductor capacitors and metal-oxide-semiconductor field effect transistors is known to result in enhanced radiation sensitivity, increased 1/f noise, and low field breakdown. The authors have studied the origins of these effects from a spectroscopic standpoint using electron paramagnetic resonance (EPR) and atomic force microscopy. One result of high temperature annealing is the generation of three types of paramagnetic defect centers, two of which are associated with the oxide close to the Si/SiO 2 interface (oxygen-vacancy centers) and the third with the bulk Si substrate (oxygen-related donors). In all three cases, the origin of the defects may be attributed to out-diffusion of O from the SiO 2 network into the Si substrate with associated reduction of the oxide. The authors present a straightforward model for the interfacial region which assumes the driving force for O out-diffusion is the chemical potential difference of the O in the two phases (SiO 2 and the Si substrate). Experimental evidence is provided to show that enhanced hole trapping and interface-trap and border-trap generation in irradiated high-temperature annealed Si/SiO 2 /Si systems are all related either directly, or indirectly, to the presence of oxygen vacancies

  11. Strained Si/SiGe MOS transistor model

    Directory of Open Access Journals (Sweden)

    Tatjana Pešić-Brđanin

    2009-06-01

    Full Text Available In this paper we describe a new model of surfacechannel strained-Si/SiGe MOSFET based on the extension of non-quasi-static (NQS circuit model previously derived for bulk-Si devices. Basic equations of the NQS model have been modified to account for the new physical parameters of strained-Si and relaxed-SiGe layers. From the comparisons with measurements, it is shown that a modified NQS MOS including steady-state self heating can accurately predict DC characteristics of Strained Silicon MOSFETs.

  12. Materials and devices for quantum information processing in Si/SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Sailer, Juergen

    2010-12-15

    , starting from Si/SiGe 2DES, further reduce the degree of freedom of the motion of the electrons. This is accomplished by nano-structured Palladium (Pd) Schottky top-gates on the sample surface with which it is possible to selectively and precisely adjust the 2D sheet carrier density in a leakage and hysteresis free manner. Using this technique, it was possible to realize an electrostatically defined double quantum dot (DQD) in Si/SiGe. By adjusting the gate bias, the DQD could be tuned from the many electron regime, in which directly measurable current transport was still possible, all the way down to the few electron regime. In this few electron regime, current flow became unmeasurable small, which made the application of a charge sensing technique necessary. As a highly sensitive charge-sensor, another quantum dot nearby was used. Changes in the charge occupancy of the DQD smaller than one tenth of an elementary charge could be resolved. Suitability of the device for more sophisticated future experiments in QIP could be shown by measuring charge-stability-diagrams free of any unwanted charge reconfiguration events. (orig.)

  13. Modifier cation effects on (29)Si nuclear shielding anisotropies in silicate glasses.

    Science.gov (United States)

    Baltisberger, Jay H; Florian, Pierre; Keeler, Eric G; Phyo, Pyae A; Sanders, Kevin J; Grandinetti, Philip J

    2016-07-01

    We have examined variations in the (29)Si nuclear shielding tensor parameters of SiO4 tetrahedra in a series of seven alkali and alkaline earth silicate glass compositions, Cs2O·4.81 SiO2, Rb2O·3.96 SiO2, Rb2O·2.25 SiO2, K2O·4.48 SiO2, Na2O·4.74 SiO2, BaO·2.64 SiO2, and SrO·2.36 SiO2, using natural abundance (29)Si two-dimensional magic-angle flipping (MAF) experiments. Our analyses of these 2D spectra reveal a linear dependence of the (29)Si nuclear shielding anisotropy of Q((3)) sites on the Si-non-bridging oxygen bond length, which in turn depends on the cation potential and coordination of modifier cations to the non-bridging oxygen. We also demonstrate how a combination of Cu(2+) as a paramagnetic dopant combined with echo train acquisition can reduce the total experiment time of (29)Si 2D NMR measurements by two orders of magnitude, enabling higher throughput 2D NMR studies of glass structure. Copyright © 2016 Elsevier Inc. All rights reserved.

  14. Modifier cation effects on 29Si nuclear shielding anisotropies in silicate glasses

    Science.gov (United States)

    Baltisberger, Jay H.; Florian, Pierre; Keeler, Eric G.; Phyo, Pyae A.; Sanders, Kevin J.; Grandinetti, Philip J.

    2016-07-01

    We have examined variations in the 29Si nuclear shielding tensor parameters of SiO4 tetrahedra in a series of seven alkali and alkaline earth silicate glass compositions, Cs2O · 4.81 SiO2, Rb2O · 3.96 SiO2, Rb2O · 2.25 SiO2, K2O · 4.48 SiO2, Na2O · 4.74 SiO2, BaO · 2.64 SiO2, and SrO · 2.36 SiO2, using natural abundance 29Si two-dimensional magic-angle flipping (MAF) experiments. Our analyses of these 2D spectra reveal a linear dependence of the 29Si nuclear shielding anisotropy of Q(3) sites on the Si-non-bridging oxygen bond length, which in turn depends on the cation potential and coordination of modifier cations to the non-bridging oxygen. We also demonstrate how a combination of Cu2+ as a paramagnetic dopant combined with echo train acquisition can reduce the total experiment time of 29Si 2D NMR measurements by two orders of magnitude, enabling higher throughput 2D NMR studies of glass structure.

  15. SiPM as photon counter for Cherenkov detectors

    International Nuclear Information System (INIS)

    Roy, B.J.; Orth, H.; Schwarz, C.; Wilms, A.; Peters, K.

    2009-01-01

    Silicon photomultipliers (SiPMs) are very new type of photon counting devices that show great promise to be used as detection device in combination with scintillators/ Cherenkov radiators. SiPM is essentially an avalanche photo-diode operated in limited Geiger mode. They have been considered as potential readout devices for DIRC counter of the PANDA detector which is one of the large experiment at FAIR- the new international facility to be built at GSI, Darmstadt. In addition, the potential use of SiPM includes medical diagnosis, fluorescence measurement and high energy physics experiments. The SiPM module is a photon counting device capable of low light level detection. It is essentially an opto-semiconductor device with excellent photon counting capability and possesses great advantages over the conventional PMTs because of low voltage operation and insensitivity to magnetic fields. In many of the high energy physics experiments, the photon sensors are required to operate in high magnetic fields precluding the use of conventional PMTs. This problem can be over come with the use of SiPMs. With this motivation in mind, we have developed a SiPM test facility and have tested several commercially available SiPM for their performance study and comparison with other photon counting devices

  16. High-performance a -Si/c-Si heterojunction photoelectrodes for photoelectrochemical oxygen and hydrogen evolution

    KAUST Repository

    Wang, Hsin Ping; Sun, Ke; Noh, Sun Young; Kargar, Alireza; Tsai, Meng Lin; Huang, Ming Yi; Wang, Deli; He, Jr-Hau

    2015-01-01

    Amorphous Si (a-Si)/crystalline Si (c-Si) heterojunction (SiHJ) can serve as highly efficient and robust photoelectrodes for solar fuel generation. Low carrier recombination in the photoelectrodes leads to high photocurrents and photovoltages

  17. Irradiation effect on Nite-SiC/SiC composites

    International Nuclear Information System (INIS)

    Hinoki, T.; Choi, Y.B.; Kohyama, A.; Ozawa, K.

    2007-01-01

    Full text of publication follows: Silicon carbide (SiC) and SiC composites are significantly attractive materials for nuclear application in particular due to exceptional low radioactivity, excellent high temperature mechanical properties and chemical stability. Despite of the excellent potential of SiC/SiC composites, the prospect of industrialization has not been clear mainly due to the low productivity and the high material cost. Chemical vapor infiltration (CVI) method can produce the excellent SiC/SiC composites with highly crystalline and excellent mechanical properties. It has been reported that the high purity SiC/SiC composites reinforced with highly crystalline fibers and fabricated by CVI method is very stable to neutron irradiation. However the production cost is high and it is difficult to fabricate thick and dense composites by CVI method. The novel processing called Nano-powder Infiltration and Transient Eutectic Phase (NITE) Processing has been developed based on the liquid phase sintering (LPS) process modification. The NITE processing can achieve both the excellent material quality and the low processing cost. The productivity of the processing is also excellent, and various kinds of shape and size of SiC/SiC composites can be produced by the NITE processing. The NITE processing can form highly crystalline matrix, which is requirement for nuclear application. The objective of this work is to understand irradiation effect of the NITESiC/SiC composites. The SiC/SiC composites used were reinforced with high purity SiC fibers, Tyranno TM SA and fabricated by the NITE method. The NITE-SiC/SiC composite bars and reference monolithic SiC bars fabricated by CVI and NITE were irradiated at up to 1.0 dpa and 600-1000 deg. C at JMTR, Japan. Mechanical properties of non-irradiated and irradiated NITESiC/ SiC composites bars were evaluated by tensile tests. Monolithic SiC bars were evaluated by flexural tests. The fracture surface was examined by SEM. Ultimate

  18. Carbon redistribution and precipitation in high temperature ion-implanted strained Si/SiGe/Si multi-layered structures

    DEFF Research Database (Denmark)

    Gaiduk, Peter; Hansen, John Lundsgaard; Nylandsted Larsen, Arne

    2014-01-01

    Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects.......Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects....

  19. A wide-gap a-SiC:H PV-powered electrochromic window coating

    Energy Technology Data Exchange (ETDEWEB)

    Gao, W.; Lee, S.H.; Xu, Y.; Benson, D.K.; Deb, S.K.; Branz, H.M. [National Renewable Energy Lab., Golden, CO (United States)

    1998-09-01

    The authors report on the first monolithic, amorphous-silicon-based, photovoltaic-powered electrochromic window coating. The coating employs a wide bandgap a-Si{sub 1{minus}x}C{sub x}:H n-i-p photovoltaic (PV) cell as a semitransparent power supply, and a Li{sub y}WO{sub 3}/LiAlF{sub 4}/V{sub 2}O{sub 5} electrochromic (EC) device as an optical-transmittance modulator. The EC device is deposited directly on top of a PV cell that coats a glass substrate. The a-Si{sub 1{minus}x}C{sub x}:H PV cell has a Tauc gap of 2.2 eV and a transmittance of 60--80% over a large portion of the visible light spectrum. The authors reduced the thickness of the device to about 600 {angstrom} while maintaining a 1-sun open-circuit voltage of 0.9 V and short-circuit current of 2 mA/cm{sup 2}. The prototype 16 cm{sup 2} PV/EC device modulates the transmittance by more than 60% over a large portion of the visible spectrum. The coloring and bleaching times of the EC device are approximately 1 minute under normal operating conditions ({+-} 1 volt). A brief description of photoelectrochromic windows study is also given.

  20. Imaging with SiPMs in noble-gas detectors

    International Nuclear Information System (INIS)

    Yahlali, N; González, K; Fernandes, L M P; Garcia, A N C; Soriano, A

    2013-01-01

    Silicon photomultipliers (SiPMs) are photosensors widely used for imaging in a variety of high energy and nuclear physics experiments. In noble-gas detectors for double-beta decay and dark matter experiments, SiPMs are attractive photosensors for imaging. However they are insensitive to the VUV scintillation emitted by the noble gases (xenon and argon). This difficulty is overcome in the NEXT experiment by coating the SiPMs with tetraphenyl butadiene (TPB) to convert the VUV light into visible light. TPB requires stringent storage and operational conditions to prevent its degradation by environmental agents. The development of UV sensitive SiPMs is thus of utmost interest for experiments using electroluminescence of noble-gas detectors. It is in particular an important issue for a robust and background free ββ0ν experiment with xenon gas aimed by NEXT. The photon detection efficiency (PDE) of UV-enhanced SiPMs provided by Hamamatsu was determined for light in the range 250–500 nm. The PDE of standard SiPMs of the same model (S10362-33-50C), coated and non-coated with TPB, was also determined for comparison. In the UV range 250–350 nm, the PDE of the standard SiPM is shown to decrease strongly, down to about 3%. The UV-enhanced SiPM without window is shown to have the maximum PDE of 44% at 325 nm and 30% at 250 nm. The PDE of the UV-enhanced SiPM with silicon resin window has a similar trend in the UV range, although it is about 30% lower. The TPB-coated SiPM has shown to have about 6 times higher PDE than the non-coated SiPM in the range 250–315 nm. This is however below the performance of the UV-enhanced prototypes in the same wavelength range. Imaging in noble-gas detectors using UV-enhanced SiPMs is discussed.

  1. Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture

    Science.gov (United States)

    Albani, Marco; Marzegalli, Anna; Bergamaschini, Roberto; Mauceri, Marco; Crippa, Danilo; La Via, Francesco; von Känel, Hans; Miglio, Leo

    2018-05-01

    The exceptionally large thermal strain in few-micrometers-thick 3C-SiC films on Si(111), causing severe wafer bending and cracking, is demonstrated to be elastically quenched by substrate patterning in finite arrays of Si micro-pillars, sufficiently large in aspect ratio to allow for lateral pillar tilting, both by simulations and by preliminary experiments. In suspended SiC patches, the mechanical problem is addressed by finite element method: both the strain relaxation and the wafer curvature are calculated at different pillar height, array size, and film thickness. Patches as large as required by power electronic devices (500-1000 μm in size) show a remarkable residual strain in the central area, unless the pillar aspect ratio is made sufficiently large to allow peripheral pillars to accommodate the full film retraction. A sublinear relationship between the pillar aspect ratio and the patch size, guaranteeing a minimal curvature radius, as required for wafer processing and micro-crack prevention, is shown to be valid for any heteroepitaxial system.

  2. Study of Si-Ge interdiffusion with phosphorus doping

    KAUST Repository

    Cai, Feiyang; Anjum, Dalaver H.; Zhang, Xixiang; Xia, Guangrui

    2016-01-01

    Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

  3. Study of Si-Ge interdiffusion with phosphorus doping

    KAUST Repository

    Cai, Feiyang

    2016-10-28

    Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

  4. Synthesis and characterization of laminated Si/SiC composites

    Science.gov (United States)

    Naga, Salma M.; Kenawy, Sayed H.; Awaad, Mohamed; Abd El-Wahab, Hamada S.; Greil, Peter; Abadir, Magdi F.

    2012-01-01

    Laminated Si/SiC ceramics were synthesized from porous preforms of biogenous carbon impregnated with Si slurry at a temperature of 1500 °C for 2 h. Due to the capillarity infiltration with Si, both intrinsic micro- and macrostructure in the carbon preform were retained within the final ceramics. The SEM micrographs indicate that the final material exhibits a distinguished laminar structure with successive Si/SiC layers. The produced composites show weight gain of ≈5% after heat treatment in air at 1300 °C for 50 h. The produced bodies could be used as high temperature gas filters as indicated from the permeability results. PMID:25685404

  5. Structure of MnSi on SiC(0001)

    Science.gov (United States)

    Meynell, S. A.; Spitzig, A.; Edwards, B.; Robertson, M. D.; Kalliecharan, D.; Kreplak, L.; Monchesky, T. L.

    2016-11-01

    We report on the growth and magnetoresistance of MnSi films grown on SiC(0001) by molecular beam epitaxy. The growth resulted in a textured MnSi(111) film with a predominantly [1 1 ¯0 ] MnSi (111 )∥[11 2 ¯0 ] SiC(0001) epitaxial relationship, as demonstrated by transmission electron microscopy, reflection high energy electron diffraction, and atomic force microscopy. The 500 ∘C temperature required to crystallize the film leads to a dewetting of the MnSi layer. Although the sign of the lattice mismatch suggested the films would be under compressive stress, the films acquire an in-plane tensile strain likely driven by the difference in thermal expansion coefficients between the film and substrate during annealing. As a result, the magnetoresistive response demonstrates that the films possess a hard-axis out-of-plane magnetocrystalline anisotropy.

  6. Synthesis and characterization of laminated Si/SiC composites

    Directory of Open Access Journals (Sweden)

    Salma M. Naga

    2013-01-01

    Full Text Available Laminated Si/SiC ceramics were synthesized from porous preforms of biogenous carbon impregnated with Si slurry at a temperature of 1500 °C for 2 h. Due to the capillarity infiltration with Si, both intrinsic micro- and macrostructure in the carbon preform were retained within the final ceramics. The SEM micrographs indicate that the final material exhibits a distinguished laminar structure with successive Si/SiC layers. The produced composites show weight gain of ≈5% after heat treatment in air at 1300 °C for 50 h. The produced bodies could be used as high temperature gas filters as indicated from the permeability results.

  7. $^{31}$Si Self-Diffusion in Si-Ge Alloys and Si-(B-)C-N Ceramics and Diffusion Studies for Al and Si Beam Developments

    CERN Multimedia

    Nylandsted larsen, A; Voss, T L; Strohm, A

    2002-01-01

    An invaluable method for studying diffusion in solids is the radiotracer technique. However, its applicability had been restricted to radiotracer atoms with half-lives $t_{1/2}$ of about 1~d or longer. Within the framework of IS372 a facility was developed in which short-lived radiotracer atoms ( 5min $\\scriptstyle{\\lesssim}$ $t_{1/2}\\scriptstyle{\\lesssim}$1 d ) can be used. For the implantation of the short-lived tracers the facility is flanged to the ISOLDE beamline, and all post-implantation steps required in the radiotracer technique are done in situ.\\\\ After successful application of this novel technique in diffusion studies of $^{11}$C ($t_{1/2}$ = 20.3 min), this experiment aims at performing self-diffusion studies of $^{31}$Si ($t_{1/2}$ = 2.6~h) in Si--Ge alloys and in amorphous Si--(B--)C--N ceramics.\\\\ Our motivation for measuring diffusion in Si--Ge alloys is their recent technological renaissance as well as the purpose to test the prediction that in these alloys the self-diffusion mechanism chang...

  8. Rapid solidification growth mode transitions in Al-Si alloys by dynamic transmission electron microscopy

    International Nuclear Information System (INIS)

    Roehling, John D.; Coughlin, Daniel R.; Gibbs, John W.; Baldwin, J. Kevin; Mertens, James C.E.; Campbell, Geoffrey H.; Clarke, Amy J.; McKeown, Joseph T.

    2017-01-01

    In situ dynamic transmission electron microscope (DTEM) imaging of Al-Si thin-film alloys was performed to investigate rapid solidification behavior. Solidification of alloys with compositions from 1 to 15 atomic percent Si was imaged during pulsed laser melting and subsequent solidification. Solely α-Al solidification was observed in Al-1Si and Al-3Si alloys, and solely kinetically modified eutectic growth was observed in Al-6Si and Al-9Si alloys. A transition in the solidification mode in eutectic and hypereutectic alloys (Al-12Si and Al-15Si) from nucleated α-Al dendrites at lower solidification velocities to planar eutectic growth at higher solidification velocities was observed, departing from trends previously seen in laser-track melting experiments. Comparisons of the growth modes and corresponding velocities are compared with previous solidification models, and implications regarding the models are discussed.

  9. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

    International Nuclear Information System (INIS)

    Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

    2014-01-01

    Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN x /SiN y multilayers with high on/off ratio of 10 9 . High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

  10. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

    Science.gov (United States)

    Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

    2014-09-01

    Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiNx/SiNy multilayers with high on/off ratio of 109. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

  11. Internal photoemission study on charge trapping behavior in rapid thermal oxides on strained-Si/SiGe heterolayers

    International Nuclear Information System (INIS)

    Bera, M.K.; Mahata, C.; Bhattacharya, S.; Chakraborty, A.K.; Armstrong, B.M.; Gamble, H.S.; Maiti, C.K.

    2008-01-01

    A comparative study on the nature of defects and their relationship to charge trapping with enhanced photosensitivity has been investigated through magnetic resonance and internal photoemission (IPE) experiments for rapid thermal grown oxides (RTO) on strained-Si/Si 0.8 Ge 0.2 and on co-processed bulk-Si (1 0 0) substrates. Both the band and defect-related electronic states were characterized through EPR, IPE, C-V and I-V measurements under UV-illumination. Surface chemical characterization of as-grown ultrathin oxides (5-7 nm) has been performed using high-resolution XPS. Enhancement in Ge-segregation with increasing oxidation temperature is reported. Comparative studies on interface properties and leakage current behavior of rapid thermal oxides have also been studied through fabricating metal-oxide-semiconductor capacitor structures. A degraded electrical property with increasing oxidation temperature is reported. Constant voltage stressing (CVS) in the range of 5.5-7 V was used to study the breakdown characteristics of different samples. We observe a distinguishably different time-to-breakdown (t bd ) phenomenon for bulk-Si and strained-Si/SiGe samples. Whereas the oxide on bulk-Si shows a typical breakdown behavior, the RTO grown oxide on strained-Si/SiGe samples showed a quasi-or soft-breakdown with lower t bd value. It may be pointed out that quasi-breakdown may be a stronger reliability limiting factor for strained-Si/SiGe devices in the oxide thickness range studied

  12. Study of Si/Si, Si/SiO2, and metal-oxide-semiconductor (MOS) using positrons

    International Nuclear Information System (INIS)

    Leung, To Chi.

    1991-01-01

    A variable-energy positron beam is used to study Si/Si, Si/SiO 2 , and metal-oxide-semiconductor (MOS) structures. The capability of depth resolution and the remarkable sensitivity to defects have made the positron annihilation technique a unique tool in detecting open-volume defects in the newly innovated low temperature (300C) molecular-beam-epitaxy (MBE) Si/Si. These two features of the positron beam have further shown its potential role in the study of the Si/SiO 2 . Distinct annihilation characteristics has been observed at the interface and has been studied as a function of the sample growth conditions, annealing (in vacuum), and hydrogen exposure. The MOS structure provides an effective way to study the electrical properties of the Si/SiO 2 interface as a function of applied bias voltage. The annihilation characteristics show a large change as the device condition is changed from accumulation to inversion. The effect of forming gas (FG) anneal is studied using positron annihilation and the result is compared with capacitance-voltage (C-V) measurements. The reduction in the number of interface states is found correlated with the changes in the positron spectra. The present study shows the importance of the positron annihilation technique as a non-contact, non-destructive, and depth-sensitive characterization tool to study the Si-related systems, in particular, the Si/SiO 2 interface which is of crucial importance in semiconductor technology, and fundamental understanding of the defects responsible for degradation of the electrical properties

  13. Silicon for ultra-low-level detectors and sup 32 Si

    Energy Technology Data Exchange (ETDEWEB)

    Plaga, R. (Max Planck Inst. fuer Kernphysik, Heidelberg (Germany))

    1991-11-15

    A recent dark matter experiment using a silicon diode detector confirms that the decay of {sup 32}Si is a dangerous background in ultra-low-level experiments using silicon as detector material or shielding. In this Letter we study the mechanism of how {sup 32}Si enters commercially available silicon. Ways to avoid this contamination are pointed out. Limits on the {sup 32}Si content of silicon from measurements with miniaturized low-level proportional counters are also given. (orig.).

  14. Positron annihilation at the Si/SiO2 interface

    International Nuclear Information System (INIS)

    Leung, T.C.; Weinberg, Z.A.; Asoka-Kumar, P.; Nielsen, B.; Rubloff, G.W.; Lynn, K.G.

    1992-01-01

    Variable-energy positron annihilation depth-profiling has been applied to the study of the Si/SiO 2 interface in Al-gate metal-oxide-semiconductor (MOS) structures. For both n- and p-type silicon under conditions of negative gate bias, the positron annihilation S-factor characteristic of the interface (S int ) is substantially modified. Temperature and annealing behavior, combined with known MOS physics, suggest strongly that S int depends directly on holes at interface states or traps at the Si/SiO 2 interface

  15. Formation of Si/Ge/Si heterostructures with quantum dots

    International Nuclear Information System (INIS)

    Zinov'ev, V.A.; Dvurechenskij, A.V.; Novikov, P.L.

    2003-01-01

    It is present the Monte Carlo simulation of epitaxial embedding of faceted three-dimensional Ge islands (quantum dots) in a Si matrix. Under a Si flux these islands expand and undergo a shape change (from pyramidal to drop-like shape). The main expansion occurs at initial stage of embedding in Si (deposition of 1-2 monolayers). This change is controlled by surface diffusion. The shape of island can be preserved when one uses the higher Si fluxes. The reason of island conservation lies in blocking of Ge surface diffusion [ru

  16. Use of thermodynamic calculation to predict the effect of Si on the ageing behavior of Al-Mg-Si-Cu alloys

    International Nuclear Information System (INIS)

    Ji, Yanli; Zhong, Hao; Hu, Ping; Guo, Fuan

    2011-01-01

    Research highlights: → Thermodynamic calculation can predict the ageing behavior of 6xxx alloys. → The hardness level of the alloys depends on the Si content in as-quenched matrix. → The precipitation strengthening effect depends on the Mg 2 Si level of the alloys. -- Abstract: Thermodynamic calculation was employed to predict the influence of Si content on the ageing behavior of Al-Mg-Si-Cu alloys. In addition, experiments were carried out to verify the predictions. The results show that thermodynamic calculation can predict the effect of Si content on the ageing behavior of the studied alloys. This study further proposes that the hardness level of alloys during ageing is directly related to the Si content in the as-quenched supersaturated solution, while the precipitation strengthening effect is directly related to the Mg 2 Si level of the alloys.

  17. Microstructure and properties of an Al-Ti-Cu-Si brazing alloy for SiC-metal joining

    Science.gov (United States)

    Dai, Chun-duo; Ma, Rui-na; Wang, Wei; Cao, Xiao-ming; Yu, Yan

    2017-05-01

    An Al-Ti-Cu-Si solid-liquid dual-phase alloy that exhibits good wettability and appropriate interfacial reaction with SiC at 500-600°C was designed for SiC-metal joining. The microstructure, phases, differential thermal curves, and high-temperature wetting behavior of the alloy were analyzed using scanning electron microscopy, X-ray diffraction analysis, differential scanning calorimetry, and the sessile drop method. The experimental results show that the 76.5Al-8.5Ti-5Cu-10Si alloy is mainly composed of Al-Al2Cu and Al-Si hypoeutectic low-melting-point microstructures (493-586°C) and the high-melting-point intermetallic compound AlTiSi (840°C). The contact angle, determined by high-temperature wetting experiments, is approximately 54°. Furthermore, the wetting interface is smooth and contains no obvious defects. Metallurgical bonding at the interface is attributable to the reaction between Al and Si in the alloy and ceramic, respectively. The formation of the brittle Al4C3 phase at the interface is suppressed by the addition of 10wt% Si to the alloy.

  18. A new technique to modify hypereutectic Al-24%Si alloys by a Si-P master alloy

    Energy Technology Data Exchange (ETDEWEB)

    Wu Yaping; Wang Shujun; Li Hui [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, 73 Jingshi Road, Jinan 250061 (China); Liu Xiangfa [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, 73 Jingshi Road, Jinan 250061 (China)], E-mail: xfliu@sdu.edu.cn

    2009-05-27

    The modification effect of a Si-P master alloy on Al-24%Si alloy was investigated by using electron probe micro-analyzer (EPMA) and optical microscopy (OM). The dissolution problem of the Si-P master alloys was solved by changing the sequence of addition. When the Si-P master alloy was added into Al melt before the addition of silicon, the best modification effect could be achieved. The modification parameters of the master alloy on Al-24%Si alloy were optimized through designing and analyzing the orthogonal experiment, and their influences on the modification effect were discussed. The results show that the influence of temperature on the modification effect is the greatest, followed by the addition level, and the holding time is the least. The optimized modification parameters are the modification temperature of 810 deg. C, the addition level of 0.35 wt.%, the holding time of 30 min + 50 min whose meaning is that the Si-P master alloy is added firstly to the molten Al, and silicon is added 30 min later, then holding another 50 min. In addition, the modification mechanism of the Si-P master alloy on Al-24%Si alloy was also discussed.

  19. First-principles study of the Pd–Si system and Pd(0 0 1)/SiC(0 0 1) hetero-structure

    Energy Technology Data Exchange (ETDEWEB)

    Turchi, P.E.A. [Lawrence Livermore National Laboratory (L-352), 7000 East Avenue, Livermore, CA 94551 (United States); Ivashchenko, V.I. [Institute of Problems of Materials Science, NAS of Ukraine, Krzhyzhanovsky str. 3, 03142 Kyiv (Ukraine)

    2014-11-15

    Highlights: • A large atomic mixing at the Pd/Si interface occurs at 1500–1800 K. • The Pd/C interface remains sharp even at the highest temperature of 2100 K. • At the Pd/C interface, voids and a graphite-like clustering are detected. • At the Pd/Si interface C22-Pd{sub 2}Si and D0{sub 11}-Pd{sub 3}Si fragments form, in agreement with experiment. - Abstract: First-principles molecular dynamics simulations of the Pd(0 0 1)/3C–SiC(0 0 1) nano-layered structure were carried out at different temperatures ranging from 300 to 2100 K. Various PdSi (Pnma, Fm3{sup ¯}m, P6{sup ¯}m2, Pm3{sup ¯}m), Pd{sub 2}Si (P6{sup ¯}2m, P6{sub 3}/mmc, P3{sup ¯}m1, P3{sup ¯}1m) and Pd{sub 3}Si (Pnma, P6{sub 3}22, Pm3{sup ¯}m, I4/mmm) structures under pressure were studied to identify the structure of the Pd/Si and Pd/C interfaces in the Pd/SiC systems at high temperatures. It was found that a large atomic mixing at the Pd/Si interface occurred at 1500–1800 K, whereas the Pd/C interface remained sharp even at the highest temperature of 2100 K. At the Pd/C interface, voids and a graphite-like clustering were detected. Palladium and silicon atoms interact at the Pd/Si interface to mostly form C22-Pd{sub 2}Si and D0{sub 11}-Pd{sub 3}Si fragments, in agreement with experiment.

  20. On the atomic structure of liquid Ni-Si alloys: a neutron diffraction study

    Science.gov (United States)

    Gruner, S.; Marczinke, J.; Hennet, L.; Hoyer, W.; Cuello, G. J.

    2009-09-01

    The atomic structure of the liquid NiSi and NiSi2 alloys is investigated by means of neutron diffraction experiments with isotopic substitution. From experimental data-sets obtained using four Ni isotopes, partial structure factors and pair correlation functions are obtained by applying a reverse Monte Carlo modelling approach. Both alloys were found to exhibit a strong tendency to hetero-coordination within the first coordination shell. In particular, covalent Si-Si bonds with somewhat greater distances seem to influence the structure of the liquid NiSi alloy.

  1. On the atomic structure of liquid Ni-Si alloys: a neutron diffraction study

    Energy Technology Data Exchange (ETDEWEB)

    Gruner, S; Marczinke, J; Hoyer, W [Institute of Physics, Chemnitz University of Technology, D-09107 Chemnitz (Germany); Hennet, L [CNRS-CEMHTI, University of Orleans, F-45071 Orleans (France); Cuello, G J, E-mail: sascha.gruner@physik.tu-chemnitz.d [Institute Laue-Langevin, PO Box 156, F-38042 Grenoble (France)

    2009-09-23

    The atomic structure of the liquid NiSi and NiSi{sub 2} alloys is investigated by means of neutron diffraction experiments with isotopic substitution. From experimental data-sets obtained using four Ni isotopes, partial structure factors and pair correlation functions are obtained by applying a reverse Monte Carlo modelling approach. Both alloys were found to exhibit a strong tendency to hetero-coordination within the first coordination shell. In particular, covalent Si-Si bonds with somewhat greater distances seem to influence the structure of the liquid NiSi alloy.

  2. Study of the excited states of 28Si using the 27Al(p,γ)28Si radiative capture

    International Nuclear Information System (INIS)

    Dalmas, Jean.

    1974-01-01

    The gamma decay of 28 Si levels excited in the 27 Al(p,γ) 28 Si reaction has been investigated in the energy range Esub(p) 3 classification. A part from the K=0 + rotational band based on the ground state, the SU 3 previsions are not substantiated, but can not definitely rejected, and a few experiment are suggested. On the other band, many results are consistent with the shell model calculations [fr

  3. 32Si dating of sediments

    International Nuclear Information System (INIS)

    Morgenstern, U.

    2006-01-01

    Useful tools for determining absolute ages of sediments deposited within the last c. 100 years include 210 Pb, 137 Cs, and bomb radiocarbon. Cosmogenic 32 Si, with a half life of c. 140 years, can be applied in the age range 30-1000 years and is ideally suited for this time period. Detection of 32 Si is, however, very difficult due to its extremely low natural specific activity, and the vast excess of stable silicon (i.e. low 32 Si/Si ratio). 23 refs

  4. Electrical characterization and simulation of SiPMs

    Energy Technology Data Exchange (ETDEWEB)

    Scheuch, Florian, E-mail: scheuch@physik.rwth-aachen.de; Führen, Daniel; Hebbeker, Thomas; Heidemann, Carsten; Merschmeyer, Markus

    2015-07-01

    Silicon Photomultipliers (SiPMs) are versatile and sensitive photon detectors that experience a fast growing variety of use in particle physics and related fields of application. These photo detectors have a very promising photon detection efficiency and are therefore interesting for very low light flux applications such as scintillation and fluorescence light detection. As a semiconductor device the SiPM's gain and time response strongly depend on the operating temperature and voltage. Thus they have to be understood for a proper use of the SiPM. Therefore, accurate electrical simulations of the SiPM's behavior involving electrical readout and front-end electronics help to improve the design of experimental setups, since several different designs can be tested and simulated with a manageable amount of effort. To perform these simulations, a detailed equivalent circuit of the SiPM has to be used containing a set of well-defined parameters. For this purpose, SPICE simulations of SiPMs and readout electronics have been performed. These simulations utilize an improved SiPM model consisting of resistors, capacitances and inductances. The SiPM parameters for these simulations have been determined by measuring the impedance over a wide frequency range while applying a DC voltage in forward direction and various DC voltages from zero up to the SiPM breakdown voltage in order to determine the behavior under operating conditions. The impedance measurements, the electrical model and the resulting simulations are presented. The impact of different setups and the electrical properties of the SiPM is discussed.

  5. Electromagnetic dissociation of relativistic [sup 28]Si by nucleon emission

    Energy Technology Data Exchange (ETDEWEB)

    Sonnadara, U.J.

    1992-12-01

    A detailed study of the electromagnetic dissociation of [sup 28]Si by nucleon emission at E[sub lab]/A = 14.6 (GeV/nucleon was carried out with [sup 28]Si beams interacting on [sup 208]Pb). [sup 120]Sn. [sup 64]C targets. The measurements apparatus consists of detectors in the target area which measure the energy and charged multiplicity, and a forward spectrometer which measures the position, momentum and energy of the reaction fragments. The exclusive electromagnetic dissociation cross sections for decay channels having multiple nucleons in the final state have been measured which enables the selection of events produced in pure electromagnetic interactions. The measured cross sections agree well with previous measurements obtained for the removal of a few nucleons as well as with measurements on total charge removal cross sections from other experiments. The dependence of the integrated cross sections on the target charge Z[sub T] and the target mass AT confirms that for higher Z targets the excitation is largely electromagnetic. Direct measurements of the excitation energy for the electromagnetic dissociation of [sup 28]Si [yields] p+[sup 27]Al and [sup 28]Si [yields] n+[sup 27]Si have been obtained through a calculation of the invariant mass in kinematically, reconstructed events. The excitation energy spectrum for all targets peak near the isovector giant dipole resonance in [sup 28]Si. These distributions are well reproduced by combining the photon spectrum calculated using the Weizsaecker-Williams approximation with the experimental data on the photonuclear [sup 28]Si([sub [gamma],p])[sup 27]Al and [sup 28]Si([sub [gamma],n])[sup 27]Si. The possibilities of observing double giant dipole resonance excitations in [sup 28]Si have been investigated with cross section measurements as well as with excitation energy reconstruction.

  6. Joining of SiC ceramics and SiC/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Rabin, B.H. [Idaho National Engineering Lab., Idaho Falls, ID (United States)

    1996-08-01

    This project has successfully developed a practical and reliable method for fabricating SiC ceramic-ceramic joints. This joining method will permit the use of SiC-based ceramics in a variety of elevated temperature fossil energy applications. The technique is based on a reaction bonding approach that provides joint interlayers compatible with SiC, and excellent joint mechanical properties at temperatures exceeding 1000{degrees}C. Recent emphasis has been given to technology transfer activities, and several collaborative research efforts are in progress. Investigations are focusing on applying the joining method to sintered {alpha}-SiC and fiber-reinforced SiC/SiC composites for use in applications such as heat exchangers, radiant burners and gas turbine components.

  7. Development of Solar Grade Silicon (SoG-Si) Feedstock by Recycling SoG-Si Wastes

    Energy Technology Data Exchange (ETDEWEB)

    Lifeng Zhang; Anping Dong; Lucas Nana Wiredu Damoah

    2013-01-24

    Experiment results of EM separation show that the non-metallic inclusions were successfully pushed to the boundary layer of the crucible under EM force. Larger frequency and smaller current generate smaller thickness of accumulated inclusions. More detailed EM separation experiments are undergoing to investigate the factors that affect the removal efficient of inclusions from SoG-Si

  8. Tailoring of SiC nanoprecipitates formed in Si

    Energy Technology Data Exchange (ETDEWEB)

    Velisa, G., E-mail: gihan.velisa@cea.fr [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Horia Hulubei National Institute for Physics and Nuclear Engineering, P.O. Box MG-6, 077125 Magurele (Romania); Trocellier, P. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Thomé, L. [Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR8609, Bât. 108, 91405 Orsay (France); Vaubaillon, S. [CEA, INSTN, UEPTN, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Miro, S.; Serruys, Y.; Bordas, É. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Meslin, E. [CEA, DEN, Service de Recherches de Métallurgie Physique, F-91191 Gif-sur-Yvette (France); Mylonas, S. [Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR8609, Bât. 108, 91405 Orsay (France); Coulon, P.E. [Ecole Polytechnique, Laboratoire des Solides Irradiés, CEA/DSM/IRAMIS-CNRS, 91128 Palaiseau Cedex (France); Leprêtre, F.; Pilz, A.; Beck, L. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France)

    2013-07-15

    The SiC synthesis through single-beam of C{sup +}, and simultaneous-dual-beam of C{sup +} and Si{sup +} ion implantations into a Si substrate heated at 550 °C has been studied by means of three complementary analytical techniques: nuclear reaction analysis (NRA), Raman, and transmission electron microscopy (TEM). It is shown that a broad distribution of SiC nanoprecipitates is directly formed after simultaneous-dual-beam (520-keV C{sup +} and 890-keV Si{sup +}) and single-beam (520-keV C{sup +}) ion implantations. Their shape appear as spherical (average size ∼4–5 nm) and they are in epitaxial relationship with the silicon matrix.

  9. Investigation of γ-radiation defect formation at the Si-SiO2 interface

    International Nuclear Information System (INIS)

    Zaynabidinov, S.; Yulchiev, Sh.; Aliev, R.

    2004-01-01

    Full text: In work the results of an experimental research of process radiating defects formation on border are submitted undressed Si-SiO 2 at γ-radiation of the silicon MOS structures. As against similar researches the basic attention is given on the analysis of generation-recombination characteristics of structures, that allowed to establish character of the defects formation both on border undressed Si-SiO 2 , and in about border of Si. In experiments the structures received by thermal oxidation at T=1000 deg. C in environment of dry oxygen n-Si substrates with specific resistance ρ=0.3 Ω·cm are used. The thickness of oxygen layer made ∼0.1 μm. The test MOS-structures with an aluminium electrode and area ∼0.01 cm 2 irradiated with γ-quanta from the 60 Co source by a dose of 10 6 rad. The choice of a dose of an radiation is caused by that at such dose the essential increase of concentration of superficial defects is observed, and at the same time there are no significant changes of parameters of a substrate because of formation of point defects in volume of silicon. The generation characteristics of structures such, as speed of superficial generation s and time of life τ g of carriers of a charge in about surface before and after an radiation defined by a method isothermal relaxation of nonequilibrium high-frequency capacity. The relaxation of nonequilibrium capacity registered at submission on translating structure in a condition of deeper inversion. Such mode of measurement allows to neglect the contribution which is brought in recharged of superficial condition in superficial generation currents. Are received relaxation dependence of structures before and after an radiation, and also spectra of distribution of density of superficial condition on width of the forbidden zone Si dN ss /dE. The increase at 12-15 of time of concentration of superficial condition with E=E c -(0.18±0.03) eV in the irradiated structures is established. Such condition is

  10. Mechanism of formation of a zone without vacancy pores along a surface under electron irradiation of a metal in the high-volt electron microscope

    International Nuclear Information System (INIS)

    Golubov, S.I.; Konobeev, Yu.V.; Ryabov, V.A.

    1981-01-01

    Formation mechanism of zones free of vacancy pores near the vacant surface of a metal preliminary irradiated at a high neutron dose when irradiating with electrons in a high-voltage electron microscope has been suggested. It was assumed to explain experimentally observed values of width and time of such zone formation that interstitial atoms are reflected from foil surface while boundary serves as an ideal sink for the vacancies. The carried out calculation of stationary equations of vacancy and interstitial diffusion with the mentioned boundary condition has shown that determination of a stable zone width is possible only in assumption on a variable in a depth of dislocation density. Theoretical evaluations of a zone width being in good agreement with an experiment and with the results of numerical calculations have been obtained in negligence of recombination of point defects as well as for the case of total reflection of interstitials. Discussed are different mechanisms of weak capture of proper interstitial atoms diffusing to it with the metal surface [ru

  11. SI units in radiation protection

    International Nuclear Information System (INIS)

    Jain, V.K.; Soman, S.D.

    1978-01-01

    International System of Units abbreviated as SI units has been adopted by most of the countries of the world. Following this development, the implementation of SI units has become mandatory with a transition period of about ten years. Some of the journals have already adopted the SI units and any material sent for publication to them must use only these. International Commission on Radiation Units and Measurement (ICRU) published letters in several journals including Physics in Medicine and Biology, Health Physics, British Journal of Radiology, etc. outlining the latest recommendations on SI units to elicit the reactions of scientists in the general field of radiological sciences. Reactions to the letters were numerous as can be seen in the correspondence columns of these journals for the last few years and ranged from great misgivings and apprehension to support and appreciation. SI units have also been the subject of editorial comments in several journals. On the basis of a survey of this literature, it may be said that there was general agreement on the long term advantage of SI units inspite of some practical difficulties in their use particularly in the initial stages. This report presents a review of SI units in radiological sciences with a view to familiarize the users with the new units in terms of the old. A time table for the gradual changeover to the SI units is also outlined. (auth.)

  12. Radiation effects and micromechanics of SiC/SiC composites

    International Nuclear Information System (INIS)

    Ghoniem, N.M.

    1992-01-01

    The basic displacement damage process in SiC has been fully explored, and the mechanisms identified. Major modifications have been made to the theory of damage dosimetry in Fusion, Fission and Ion Simulation studies of Sic. For the first time, calculations of displacements per atoms in SiC can be made in any irradiation environment. Applications to irradiations in fusion first wall neutron spectra (ARIES and PROMETHEUS) as well as in fission spectra (HIFIR and FFTF) are given. Nucleation of helium-filled cavities in SiC was studied, using concepts of stability theory to determine the size of the critical nucleus under continuous generation of helium and displacement damage. It is predicted that a bimodal distribution of cavity sizes is likely to occur in heavily irradiated SiC. A study of the chemical compatibility of SiC composite structures with fusion reactor coolants at high-temperatures was undertaken. It was shown that SiC itself is chemically very stable in helium coolants in the temperature range 500--1000 degree C. However, current fiber/matrix interfaces, such as C and BN are not. The fracture mechanics of high-temperature matrix cracks with bridging fibers is now in progress. A fundamentally unique approach to study the propagation and interaction of cracks in a composite was initiated. The main focus of our research during the following period will be : (1) Theory and experiments for the micro-mechanics of high-temperature failure; and (2) Analysis of radiation damage and microstructure evolution

  13. Preparation and study of IrO2/SiC–Si supported anode catalyst for high temperature PEM steam electrolysers

    DEFF Research Database (Denmark)

    Nikiforov, Aleksey; Tomás García, Antonio Luis; Petrushina, Irina

    2011-01-01

    A novel catalyst material for oxygen evolution electrodes was prepared and characterised by different techniques. IrO2 supported on a SiC–Si composite was synthesised by the Adams fusion method. XRD and nitrogen adsorption experiments showed an influence of the support on the surface properties o...

  14. Synthesis and structural property of Si nanosheets connected to Si nanowires using MnCl{sub 2}/Si powder source

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Erchao [Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Ueki, Akiko [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Meng, Xiang [Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Suzuki, Hiroaki [Graduate School of Engineering, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Itahara, Hiroshi [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Tatsuoka, Hirokazu, E-mail: tatsuoka.hirokazu@shizuoka.ac.jp [Graduate School of Integrated Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan)

    2016-08-15

    Graphical abstract: Si nanosheets connected to Si nanowires synthesized using a MnCl{sub 2}/Si powder source with an Au catalyst avoid the use of air-sensitive SiH{sub 4} or SiCl{sub 4}. It was evident from these structural features of the nanosheets (leaf blade) with nanowires (petiole) that the nanosheets were formed by the twin-plane reentrant-edge mechanism. The feature of the observed lattice fringes of the Si(111) nanosheets was clearly explained by the interference with the extra diffraction spots that arose due to the reciprocal lattice streaking effect. - Highlights: • New Si nanosheets connected to Si nanowires were synthesized using MnCl{sub 2}/Si powders. • The synthesis method has benefits in terms of avoiding air sensitive SiH{sub 4} or SiCl{sub 4}. • Structural property and electron diffraction of the Si nanosheets were clarified. • Odd lattice fringes of the Si nanosheets observed by HRTEM were clearly explained. - Abstract: Si nanosheets connected to Si nanowires were synthesized using a MnCl{sub 2}/Si powder source with an Au catalyst. The synthesis method has benefits in terms of avoiding conventionally used air-sensitive SiH{sub 4} or SiCl{sub 4}. The existence of the Si nanosheets connected to the Si<111> nanowires, like sprouts or leaves with petioles, was observed, and the surface of the nanosheets was Si{111}. The nanosheets were grown in the growth direction of <211> perpendicular to that of the Si nanowires. It was evident from these structural features of the nanosheets that the nanosheets were formed by the twin-plane reentrant-edge mechanism. The feature of the observed lattice fringes, which do not appear for Si bulk crystals, of the Si(111) nanosheets obtained by high resolution transmission electron microscopy was clearly explained due to the extra diffraction spots that arose by the reciprocal lattice streaking effect.

  15. The origin of narrowing of the Si 2p coincidence photoelectron spectroscopy main line of Si(1 0 0) surface

    International Nuclear Information System (INIS)

    Ohno, Masahide

    2011-01-01

    Highlights: → The Si 2p coincidence photoelectron spectroscopy (PES) main line of Si(1 0 0) is calculated. → The PES main line shows an asymmetric line shape change compared to the singles one. → The narrowing of the coincidence Si 2p PES main line is well reproduced. → The inherent mechanism of APECS is explained by a many-body theory. - Abstract: The Si 2p photoelectron spectroscopy (PES) main line of Si(1 0 0) surface measured in coincidence with the singles (noncoincidence) Si L 2,3 -VV Auger-electron spectroscopy (AES) elastic peak is calculated. The agreement with the experiment is good. The present work is the first many-body calculation of the experimental coincidence PES spectrum of solid surface. The narrowing of the coincidence Si 2p PES main line compared to the singles one is due to the mechanism inherent in the coincidence PES. The inherent mechanism is explained by a many-body theory by which photoemission and Auger-electron emission are treated on the same footing.

  16. Ballistic electron emission spectroscopy on Ag/Si devices

    Energy Technology Data Exchange (ETDEWEB)

    Bannani, A; Bobisch, C A; Matena, M; Moeller, R [Department of Physics, Center for Nanointegration Duisburg-Essen, University of Duisburg-Essen, 47048 Duisburg (Germany)], E-mail: amin.bannani@uni-due.de

    2008-09-17

    In this work we report on ballistic electron emission spectroscopy (BEES) studies on epitaxial layers of silver grown on silicon surfaces, with either a Si(111)-(7 x 7) or Si(100)-(2 x 1) surface reconstruction. The experiments were done at low temperature and in ultra-high vacuum (UHV). In addition, BEES measurements on polycrystalline Ag films grown on hydrogen-terminated H:Si(111)-(1 x 1) and H:Si(100)-(2 x 1) surfaces were performed. The Schottky barrier heights were evaluated by BEES. The results are compared to the values for the barrier height reported for macroscopic Schottky diodes. We show that the barrier heights for the epitaxial films substantially differ from the values measured on polycrystalline Ag films, suggesting a strong effect of the interface on the barrier height.

  17. Biomorphous SiSiC/Al-Si ceramic composites manufactured by squeeze casting: microstructure and mechanical properties

    Energy Technology Data Exchange (ETDEWEB)

    Zollfrank, C.; Travitzky, N.; Sieber, H.; Greil, P. [Department of Materials Science, Glass and Ceramics, University of Erlangen-Nuernberg (Germany); Selchert, T. [Advanced Ceramics Group, Technical University of Hamburg-Harburg (Germany)

    2005-08-01

    SiSiC/Al-Si composites were fabricated by pressure-assisted infiltration of an Al-Si alloy into porous biocarbon preforms derived from the rattan palm. Al-Si alloy was found in the pore channels of the biomorphous SiSiC preform, whereas SiC and carbon were present in the struts. The formation of a detrimental Al{sub 4}C{sub 3}-phase was not observed in the composites. A bending strength of 200 MPa was measured. The fractured surfaces showed pull-out of the Al-alloy. (Abstract Copyright [2005], Wiley Periodicals, Inc.)

  18. Fabrication and Mechanical Properties of SiCw(p/SiC-Si Composites by Liquid Si Infiltration using Pyrolysed Rice Husks and SiC Powders as Precursors

    Directory of Open Access Journals (Sweden)

    Dan Zhu

    2014-03-01

    Full Text Available Dense silicon carbide (SiC matrix composites with SiC whiskers and particles as reinforcement were prepared by infiltrating molten Si at 1550 °C into porous preforms composed of pyrolysed rice husks (RHs and extra added SiC powder in different ratios. The Vickers hardness of the composites showed an increase from 18.6 to 21.3 GPa when the amount of SiC added in the preforms was 20% (w/w, and then decreased to 17.3 GPa with the increase of SiC added in the preforms up to 80% (w/w. The values of flexural strength of the composites initially decreased when 20% (w/w SiC was added in the preform and then increased to 587 MPa when the SiC concentration reached 80% (w/w. The refinement of SiC particle sizes and the improvement of the microstructure in particle distribution of the composites due to the addition of external SiC played an effective role in improving the mechanical properties of the composites.

  19. Low-temperature magnetotransport in Si/SiGe heterostructures on 300 mm Si wafers

    Science.gov (United States)

    Scappucci, Giordano; Yeoh, L.; Sabbagh, D.; Sammak, A.; Boter, J.; Droulers, G.; Kalhor, N.; Brousse, D.; Veldhorst, M.; Vandersypen, L. M. K.; Thomas, N.; Roberts, J.; Pillarisetty, R.; Amin, P.; George, H. C.; Singh, K. J.; Clarke, J. S.

    Undoped Si/SiGe heterostructures are a promising material stack for the development of spin qubits in silicon. To deploy a qubit into high volume manufacturing in a quantum computer requires stringent control over substrate uniformity and quality. Electron mobility and valley splitting are two key electrical metrics of substrate quality relevant for qubits. Here we present low-temperature magnetotransport measurements of strained Si quantum wells with mobilities in excess of 100000 cm2/Vs fabricated on 300 mm wafers within the framework of advanced semiconductor manufacturing. These results are benchmarked against the results obtained in Si quantum wells deposited on 100 mm Si wafers in an academic research environment. To ensure rapid progress in quantum wells quality we have implemented fast feedback loops from materials growth, to heterostructure FET fabrication, and low temperature characterisation. On this topic we will present recent progress in developing a cryogenic platform for high-throughput magnetotransport measurements.

  20. Designing the fiber volume ratio in SiC fiber-reinforced SiC ceramic composites under Hertzian stress

    International Nuclear Information System (INIS)

    Lee, Kee Sung; Jang, Kyung Soon; Park, Jae Hong; Kim, Tae Woo; Han, In Sub; Woo, Sang Kuk

    2011-01-01

    Highlights: → Optimum fiber volume ratios in the SiC/SiC composite layers were designed under Hertzian stress. → FEM analysis and spherical indentation experiments were undertaken. → Boron nitride-pyrocarbon double coatings on the SiC fiber were effective. → Fiber volume ratio should be designed against flexural stress. -- Abstract: Finite element method (FEM) analysis and experimental studies are undertaken on the design of the fiber volume ratio in silicon carbide (SiC) fiber-reinforced SiC composites under indentation contact stresses. Boron nitride (BN)/Pyrocarbon (PyC) are selected as the coating materials for the SiC fiber. Various SiC matrix/coating/fiber/coating/matrix structures are modeled by introducing a woven fiber layer in the SiC matrix. Especially, this study attempts to find the optimum fiber volume ratio in SiC fiber-reinforced SiC ceramics under Hertzian stress. The analysis is performed by changing the fiber type, fiber volume ratio, coating material, number of coating layers, and stacking sequence of the coating layers. The variation in the stress for composites in relation to the fiber volume ratio in the contact axial or radial direction is also analyzed. The same structures are fabricated experimentally by a hot process, and the mechanical behaviors regarding the load-displacement are evaluated using the Hertzian indentation method. Various SiC matrix/coating/fiber/coating/matrix structures are fabricated, and mechanical characterization is performed by changing the coating layer, according to the introduction (or omission) of the coating layer, and the number of woven fiber mats. The results show that the damage mode changes from Hertzian stress to flexural stress as the fiber volume ratio increases in composites because of the decreased matrix volume fraction, which intensifies the radial crack damage. The result significantly indicates that the optimum fiber volume ratio in SiC fiber-reinforced SiC ceramics should be designed for

  1. Effect of hydrogen on passivation quality of SiNx/Si-rich SiNx stacked layers deposited by catalytic chemical vapor deposition on c-Si wafers

    International Nuclear Information System (INIS)

    Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

    2015-01-01

    We investigate the role of hydrogen content and fixed charges of catalytic chemical vapor deposited (Cat-CVD) SiN x /Si-rich SiN x stacked layers on the quality of crystalline silicon (c-Si) surface passivation. Calculated density of fixed charges is on the order of 10 12 cm −2 , which is high enough for effective field effect passivation. Hydrogen content in the films is also found to contribute significantly to improvement in passivation quality of the stacked layers. Furthermore, Si-rich SiN x films deposited with H 2 dilution show better passivation quality of SiN x /Si-rich SiN x stacked layers than those prepared without H 2 dilution. Effective minority carrier lifetime (τ eff ) in c-Si passivated by SiN x /Si-rich SiN x stacked layers is as high as 5.1 ms when H 2 is added during Si-rich SiN x deposition, which is much higher than the case of using Si-rich SiN x films prepared without H 2 dilution showing τ eff of 3.3 ms. - Highlights: • Passivation mechanism of Si-rich SiN x /SiN x stacked layers is investigated. • H atoms play important role in passivation quality of the stacked layer. • Addition of H 2 gas during Si-rich SiN x film deposition greatly enhances effective minority carrier lifetime (τ eff ). • For a Si-rich SiN x film with refractive index of 2.92, τ eff improves from 3.3 to 5.1 ms by H 2 addition

  2. Low dose irradiation performance of SiC interphase SiC/SiC composites

    International Nuclear Information System (INIS)

    Snead, L.L.; Lowden, R.A.; Strizak, J.; More, K.L.; Eatherly, W.S.; Bailey, J.; Williams, A.M.; Osborne, M.C.; Shinavski, R.J.

    1998-01-01

    Reduced oxygen Hi-Nicalon fiber reinforced composite SiC materials were densified with a chemically vapor infiltrated (CVI) silicon carbide (SiC) matrix and interphases of either 'porous' SiC or multilayer SiC and irradiated to a neutron fluence of 1.1 x 10 25 n m -2 (E>0.1 MeV) in the temperature range of 260 to 1060 C. The unirradiated properties of these composites are superior to previously studied ceramic grade Nicalon fiber reinforced/carbon interphase materials. Negligible reduction in the macroscopic matrix microcracking stress was observed after irradiation for the multilayer SiC interphase material and a slight reduction in matrix microcracking stress was observed for the composite with porous SiC interphase. The reduction in strength for the porous SiC interfacial material is greatest for the highest irradiation temperature. The ultimate fracture stress (in four point bending) following irradiation for the multilayer SiC and porous SiC interphase materials was reduced by 15% and 30%, respectively, which is an improvement over the 40% reduction suffered by irradiated ceramic grade Nicalon fiber materials fabricated in a similar fashion, though with a carbon interphase. The degradation of the mechanical properties of these composites is analyzed by comparison with the irradiation behavior of bare Hi-Nicalon fiber and Morton chemically vapor deposited (CVD) SiC. It is concluded that the degradation of these composites, as with the previous generation ceramic grade Nicalon fiber materials, is dominated by interfacial effects, though the overall degradation of fiber and hence composite is reduced for the newer low-oxygen fiber. (orig.)

  3. Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO{sub 2}/Si and SiO{sub 2}/SiC structures

    Energy Technology Data Exchange (ETDEWEB)

    Kobayashi, H., E-mail: koba771@ybb.ne.jp [Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); Imamura, K.; Kim, W.-B.; Im, S.-S.; Asuha [Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)

    2010-07-15

    We have developed low temperature formation methods of SiO{sub 2}/Si and SiO{sub 2}/SiC structures by use of nitric acid, i.e., nitric acid oxidation of Si (or SiC) (NAOS) methods. By use of the azeotropic NAOS method (i.e., immersion in 68 wt% HNO{sub 3} aqueous solutions at 120 deg. C), an ultrathin (i.e., 1.3-1.4 nm) SiO{sub 2} layer with a low leakage current density can be formed on Si. The leakage current density can be further decreased by post-metallization anneal (PMA) at 200 deg. C in hydrogen atmosphere, and consequently the leakage current density at the gate bias voltage of 1 V becomes 1/4-1/20 of that of an ultrathin (i.e., 1.5 nm) thermal oxide layer usually formed at temperatures between 800 and 900 deg. C. The low leakage current density is attributable to (i) low interface state density, (ii) low SiO{sub 2} gap-state density, and (iii) high band discontinuity energy at the SiO{sub 2}/Si interface arising from the high atomic density of the NAOS SiO{sub 2} layer. For the formation of a relatively thick (i.e., {>=}10 nm) SiO{sub 2} layer, we have developed the two-step NAOS method in which the initial and subsequent oxidation is performed by immersion in {approx}40 wt% HNO{sub 3} and azeotropic HNO{sub 3} aqueous solutions, respectively. In this case, the SiO{sub 2} formation rate does not depend on the Si surface orientation. Using the two-step NAOS method, a uniform thickness SiO{sub 2} layer can be formed even on the rough surface of poly-crystalline Si thin films. The atomic density of the two-step NAOS SiO{sub 2} layer is slightly higher than that for thermal oxide. When PMA at 250 deg. C in hydrogen is performed on the two-step NAOS SiO{sub 2} layer, the current-voltage and capacitance-voltage characteristics become as good as those for thermal oxide formed at 900 deg. C. A relatively thick (i.e., {>=}10 nm) SiO{sub 2} layer can also be formed on SiC at 120 deg. C by use of the two-step NAOS method. With no treatment before the NAOS method

  4. Prediction of thermodynamic properties of solute elements in Si solutions using first-principles calculations

    International Nuclear Information System (INIS)

    Iwata, K.; Matsumiya, T.; Sawada, H.; Kawakami, K.

    2003-01-01

    The method is presented to predict the activity coefficients and the interaction parameters of the solute elements in infinite dilute Si solutions by the use of first-principles calculations based on density functional theory. In this method, the regular solution model is assumed. The calculated activity coefficients in solid Si are converted to those in molten Si by the use of the solid-liquid partition coefficients. Furthermore, the interaction parameters in solid Si solutions are calculated and compared with reported experimental values of those in liquid Si solutions. The results show that the calculated activity coefficients and interaction parameters of Al, Fe, Ti and Pb in Si solutions are in good agreement with the tendency of the experiments. However, the calculations have some quantitative discrepancy from the experiments. It is expected that consideration of the excess entropy would reduce this discrepancy

  5. Grafted SiC nanocrystals

    DEFF Research Database (Denmark)

    Saini, Isha; Sharma, Annu; Dhiman, Rajnish

    2017-01-01

    ), raman spectroscopy and X-ray diffraction (XRD) measurements. UV–Visible absorption spectroscopy was used to study optical properties such as optical energy gap (Eg), Urbach's energy (Eu), refractive index (n), real (ε1) and imaginary (ε2) parts of dielectric constant of PVA as well as PVA......Polyvinyl alcohol (PVA) grafted SiC (PVA-g-SiC)/PVA nanocomposite was synthesized by incorporating PVA grafted silicon carbide (SiC) nanocrystals inside PVA matrix. In-depth structural characterization of resulting nanocomposite was carried out using fourier transform infrared spectroscopy (FTIR...

  6. Radiation emission from wrinkled SiGe/SiGe nanostructure

    Czech Academy of Sciences Publication Activity Database

    Fedorchenko, Alexander I.; Cheng, H. H.; Sun, G.; Soref, R. A.

    2010-01-01

    Roč. 96, č. 11 (2010), s. 113104-113107 ISSN 0003-6951 Institutional research plan: CEZ:AV0Z20760514 Keywords : SiGe wrinkled nanostructures * si-based optical emitter * synchrotron radiation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.820, year: 2010 http://apl.aip.org/resource/1/applab/v96/i11/p113104_s1?isAuthorized=no

  7. Electrical properties of Si/Si1-xGex/Si inverted modulation doped structures

    International Nuclear Information System (INIS)

    Sadeghzadeh, M.A.

    1998-12-01

    This thesis is a report of experimental investigations of growth strategy and electrical properties of Si/Si 1-x Ge x /Si inverted Modulation Doped (MD) structures grown by solid source Molecular Beam Epitaxy (MBE). If the grown Si layer is B-doped at some distance (as spacer) before or after the alloy layer, this remote doping induces the formation of a quasi Two Dimensional Hole Gas (2-DHG) near to the inverted (SiGe on Si) or normal (Si on SiGe) heterointerfaces of the Si/Si 1-x Ge x /Si quantum well, respectively. The latter arrangement is the well known 'normal' MD structure but the former one is the so-called 'inverted' MD structure which is of great interest for Field Effect Transistor (FET) applications. A reproducible growth strategy was employed by the use of a thick (400nm) Si cap for inverted MD structures with Ge composition in the range of 16-23%. Boron segregation and cap surface charges are significant in these inverted structures with small ( 20nm) spacer layers, respectively. It was demonstrated by secondary ion mass spectroscopy (SIMS) that boron segregation, which causes a reduction in the effective spacer dimension, can be suppressed by growth interruption after boron doping. The enhancement in hole sheet density with increasing Si cap layer thickness, is attributed to a reduction in the influence of positive surface charges in these structures. Top-gated devices were fabricated using these structures and the hole sheet density could be varied by applying a voltage to the metal-semiconductor gate, and the maximum Hall mobility of 5550 cm 2 V -1 s -1 with 4.2x10 11 cm -2 was measured (at 1.6K) in these structures. Comparison of measured Hall mobility (at 4.2K) as a function of hole sheet density in normal and inverted MD structures implies that both 2-DHG confined at normal and/or inverted structures are subjected to very similar interface charge, roughness, and alloy scattering potentials. Low temperatures magnetotransport measurements (down to

  8. The Fate and Transport of the SiO2 Nanoparticles in a Granular Activated Carbon Bed and Their Impact on the Removal of VOCs

    Science.gov (United States)

    Adsorption isotherm, adsorption kinetics and column breakthrough experiments evaluating trichloroethylene (TCE) adsorption onto granular activated carbon (GAC) were conducted in the presence and absence of silica nanoparticles (SiO2 NPs). Zeta potential of the SiO

  9. Parameters of the preproduction series SiPMs for the CMS HCAL phase I upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Heering, A., E-mail: Adriaan.Heering@cern.ch [University of Notre Dame, Notre Dame, IN 46556 (United States); Musienko, Yu., E-mail: Iouri.Musienko@cern.ch [University of Notre Dame, Notre Dame, IN 46556 (United States); Institute for Nuclear Research RAS, pr. 60-letiya Oktyabrya 7a, 117312 Moscow (Russian Federation); Ruchti, R.; Wayne, M. [University of Notre Dame, Notre Dame, IN 46556 (United States); Karneyeu, A.; Postoev, V. [Institute for Nuclear Research RAS, pr. 60-letiya Oktyabrya 7a, 117312 Moscow (Russian Federation)

    2016-07-11

    In 2012 the HCAL SiPM photo sensor upgrade was approved for the increased luminosity (5*10{sup 34}) of SLHC. The upgrade will replace the current hybrid photodiodes (HPDs) with multi-pixel Geiger-mode avalanche photodiodes, also known as silicon photomultipliers (SiPMs). A key aspect of the upgrade to SiPMs is to add longitudinal segmentation and improve signal to noise to compensate for scintillator radiation damage. After 5 years of R&D with multiple companies we developed custom large dynamic range SiPMs with large PDE and small ENC. To ensure good mechanical alignment and easy handling of the large number of production channels (>20,000) we have developed a custom ceramic package with a very thin 0.3 mm quartz window with Kyocera. Each package holds 8 channels of SiPMs. Here we report on the final SiPM parameters of the 2014 preproduction run from Hamamatsu (HPK) who has produced a series of 175 arrays with a total of 1400 SiPMs. An overview of our QA results and measurements of the photon detection efficiency, spectral response, crosstalk and cell recovery time will be discussed. - Highlights: • Uniformity of large scale SiPM production. • Small cell size SiPMs with high photo detection efficiency. • Fast recovery time SiPMs. • Custom packaging of SiPMs in High Energy Physics experiments.

  10. Characterization and properties Ti-Al-Si-N nanocomposite coatings prepared by middle frequency magnetron sputtering

    Science.gov (United States)

    Zou, C. W.; Zhang, J.; Xie, W.; Shao, L. X.; Guo, L. P.; Fu, D. J.

    2011-10-01

    TiN-containing amorphous Ti-Al-Si-N (nc-TiN/a-Si 3N 4 or a-AlN) nanocomposite coatings were deposited by using a modified closed field twin unbalanced magnetron sputtering system which is arc assisted and consists of two circles of targets, at a substrate temperature of 300 °C. XRD, XPS and High-resolution TEM experiments showed that the coatings contain TiN nanocrystals embedded in the amorphous Si 3N 4 or AlN matrix. The coatings exhibit good mechanical properties that are greatly influenced by the Si contents. The hardness of the Ti-Al-Si-N coatings deposited at Si targets currents of 5, 8, 10, and 12 A were 45, 47, 54 and 46 GPa, respectively. The high hardness of the deposited Ti-Al-Si-N coatings may be own to the plastic distortion and dislocation blocking by the nanocrystalline structure. On the other hand, the friction coefficient decreases monotonously with increasing Si contents. This result would be caused by tribo-chemical reactions, which often take place in many ceramics, e.g. Si 3N 4 reacts with H 2O to produce SiO 2 or Si(OH) 2 tribolay-layer.

  11. Ion beam synthesis of semiconductor nanoparticles for Si based optoelectronic devices

    International Nuclear Information System (INIS)

    Gonzalez-Varona, O.; Perez-Rodriguez, A.; Garrido, B.; Bonafos, C.; Lopez, M.; Morante, J.R.; Montserrat, J.; Rodriguez, R.

    2000-01-01

    Intense white (to the eye) luminescence has been obtained by multiple implantation of Si + and C + ions into thermal SiO 2 and a post-implantation annealing process. This white emission is a consequence of the convolution of three luminescence peaks centred at about 1.45 eV (infrared with a long tail in the red), 2.1 eV (yellow) and 2.8 eV (blue). These emissions have been correlated to the synthesis of nanocrystals of Si and SiC, and the existence of C-rich precipitates. Cross section TEM shows a buried layer with dark contrast, which correlates with the maximum of the C implanted profile, and likely with a high density of C-rich amorphous domains. Besides, two kinds of nanocrystalline precipitates are found, which have been identified as Si and hexagonal 6H-SiC by electron diffraction experiments. To our knowledge, these data provide the first experimental evidence on the ion beam synthesis of nanocrystalline 6H-SiC embedded in SiO 2 . Correlation with previous data gives support to the assignment of the infrared, yellow and blue peaks with the Si, C-rich and SiC precipitate phases and/or its interfaces with SiO 2

  12. Ion beam synthesis of semiconductor nanoparticles for Si based optoelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-Varona, O.; Perez-Rodriguez, A.; Garrido, B.; Bonafos, C.; Lopez, M.; Morante, J.R.; Montserrat, J.; Rodriguez, R

    2000-03-01

    Intense white (to the eye) luminescence has been obtained by multiple implantation of Si{sup +} and C{sup +} ions into thermal SiO{sub 2} and a post-implantation annealing process. This white emission is a consequence of the convolution of three luminescence peaks centred at about 1.45 eV (infrared with a long tail in the red), 2.1 eV (yellow) and 2.8 eV (blue). These emissions have been correlated to the synthesis of nanocrystals of Si and SiC, and the existence of C-rich precipitates. Cross section TEM shows a buried layer with dark contrast, which correlates with the maximum of the C implanted profile, and likely with a high density of C-rich amorphous domains. Besides, two kinds of nanocrystalline precipitates are found, which have been identified as Si and hexagonal 6H-SiC by electron diffraction experiments. To our knowledge, these data provide the first experimental evidence on the ion beam synthesis of nanocrystalline 6H-SiC embedded in SiO{sub 2}. Correlation with previous data gives support to the assignment of the infrared, yellow and blue peaks with the Si, C-rich and SiC precipitate phases and/or its interfaces with SiO{sub 2}.

  13. Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

    Directory of Open Access Journals (Sweden)

    Jiongjiong Mo

    2017-01-01

    Full Text Available The total ionizing dose irradiation effects are investigated in Si vertical diffused MOSFETs (VDMOSs with different gate dielectrics including single SiO2 layer and double Si3N4/SiO2 layer. Radiation-induced holes trapping is greater for single SiO2 layer than for double Si3N4/SiO2 layer. Dielectric oxidation temperature dependent TID effects are also studied. Holes trapping induced negative threshold voltage shift is smaller for SiO2 at lower oxidation temperature. Gate bias during irradiation leads to different VTH shift for different gate dielectrics. Single SiO2 layer shows the worst negative VTH at VG=0 V, while double Si3N4/SiO2 shows negative VTH shift at VG=-5 V, positive VTH shift at VG=10 V, and negligible VTH shift at VG=0 V.

  14. On the line intensity ratios of prominent Si II, Si III, and Si IV multiplets

    International Nuclear Information System (INIS)

    Djenize, S.; Sreckovic, A.; Bukvic, S.

    2010-01-01

    Line intensities of singly, doubly and triply ionized silicon (Si II, Si III, and Si IV, respectively) belonging to the prominent higher multiplets, are of interest in laboratory and astrophysical plasma diagnostics. We measured these line intensities in the emission spectra of pulsed helium discharge. The Si II line intensity ratios in the 3s3p 22 D-3s 2 4p 2 P o , 3s 2 3d 2 D-3s 2 4f 2 F o , and 3s 2 4p 2 P o -3s 2 4d 2 D transitions, the Si III line intensity ratios in the 3s3d 3 D-3s4p 3 P o , 3s4p 3 P o -3s4d 3 D, 3s4p 3 P o -3s5s 3 S, 3s4s 3 S-3s4p 3 P o , and 3s4f 3 F o -3s5g 3 G transitions, and the Si IV line intensity ratios in the 4p 2 P o -4d 2 D and 4p 2 P o -5s 2 S transitions were obtained in a helium plasma at an electron temperature of about 17,000 ± 2000 K. Line shapes were recorded using a spectrograph and an ICCD camera as a highly-sensitive detection system. The silicon atoms were evaporated from a Pyrex discharge tube designed for the purpose. They represent impurities in the optically thin helium plasma at the silicon ionic wavelengths investigated. The line intensity ratios obtained were compared with those available in the literature, and with values calculated on the basis of available transition probabilities. The experimental data corresponded well with line intensity ratios calculated using the transition probabilities obtained from a Multi Configuration Hartree-Fock approximation for Si III and Si IV spectra. We recommend corrections of some Si II transition probabilities.

  15. VoLTE performance in railway scenarios

    DEFF Research Database (Denmark)

    Sniady, Aleksander; Sønderskov, Morten; Soler, José

    2015-01-01

    GSM-Railways (GSM-R) is the current standard for railway voice and data communication. GSM-R provides railway specific voice services, such as Railway Emergency Call (REC). GSM-R provides also the European Train Control System (ETCS), which offers in-cab signaling and Automatic Train Protection...... (ATP). Despite these features and services, GSM-R has various major shortcomings. Therefore, alternative technologies are considered to replace GSM-R and become the next generation railway mobile communication network. 3GPP Long Term Evolution (LTE) is a likely candidate for GSM-R replacement. LTE...... is more efficient, flexible and offers much higher capacity, which allows the railway network to provide new communication-based applications for railways. Most of the research on LTE in railways has been focused on data-based railway applications (ETCS signaling and other). Nevertheless, voice...

  16. The Breakthrough Behind the Chevy Volt Battery

    Science.gov (United States)

    Lerner, Louise

    2011-03-28

    A revolutionary breakthrough cathode for lithium-ion batteries—the kind in your cell phone, laptop and new hybrid cars—makes them last longer, run more safely and perform better than batteries currently on the market.

  17. Calibration of an electron volt neutron spectrometer

    International Nuclear Information System (INIS)

    Mayers, J.; Adams, M.A.

    2011-01-01

    The procedure for calibrating the VESUVIO eV neutron spectrometer at the ISIS neutron source is described. VESUVIO is used primarily to measure the momentum distribution n(p) of atoms, by inelastic scattering of very high energy (5-150 eV) neutrons. The results of the calibrations show that measurements of n(p) in atoms with masses lower than 16 amu can be measured with a resolution width ∼25% of the intrinsic peak widths in the current instrument configuration. Some suggestions as to how the instrument resolution could be significantly improved are made.

  18. Ladina keele õpikud ja sententsikogumikud / Ivo Volt

    Index Scriptorium Estoniae

    Volt, Ivo, 1975-

    2000-01-01

    Ka sententsikogumikest: V. Hromov. Dicta et proverbia Latina. Tallinn : Perioodika, 1997 ; 1001 ladina sententsi eesti vastetega. Tallinn : Valgus, 1997 ; K. Türk. Lendsõnade leksikon. Tallinn : Avita, 1998

  19. VoLTE Performance in Railway Scenarios

    DEFF Research Database (Denmark)

    Sniady, Aleksander; Sønderskov, Morten; Soler, José

    2015-01-01

    GSM-Railways (GSM-R) is the current standard for railway voice and data communication. GSM-R provides railway specific voice services, such as Railway Emergency Call (REC). GSM-R provides also the European Train Control System (ETCS), which offers in-cab signaling and Automatic Train Protection...... (ATP). Despite these features and services, GSM-R has various major shortcomings. Therefore, alternative technologies are considered to replace GSM-R and become the next generation railway mobile communication network. 3GPP Long Term Evolution (LTE) is a likely candidate for GSM-R replacement. LTE...... is more efficient, flexible and offers much higher capacity, which allows the railway network to provide new communication-based applications for railways. Most of the research on LTE in railways has been focused on data-based railway applications (ETCS signaling and other). Nevertheless, voice...

  20. Ilmusid Rahvusraamatukogu uuenenud toimetised / Mihkel Volt

    Index Scriptorium Estoniae

    Volt, Mihkel

    2009-01-01

    Tutvustus: Ajalookirjutaja aeg = Aetas historicorum / Eesti Rahvusraamatukogu ; koostanud Piret Lotman. (Eesti Rahvusraamatukogu toimetised, nr. 11). Tallinn, 2008 ; Teenuse kvaliteet – raamatukogutöö tulemuslikkuse näitaja = Service quality – library perfomance indicator / Eesti Rahvusraamatukogu ; koostanud Anne Veinberg. (Eesti Rahvusraamatukogu toimetised ; 12). Tallinn, 2009.

  1. Kuidas õigustada esteetilist hoiakut? / Marek Volt

    Index Scriptorium Estoniae

    Volt, Marek, 1973-

    2011-01-01

    Eristatakse hoiakute-vahelist ja hoiaku-sisest õigustamist ning analüüsitakse esteetilise hoiaku episteemilist, sotsiaal-bioloogilist, moraalset, kunstilist, esteetilist ja hedoonilist õigustamist hoiaku-siseses kontekstis

  2. SiC Nanoparticles Toughened-SiC/MoSi2-SiC Multilayer Functionally Graded Oxidation Protective Coating for Carbon Materials at High Temperatures

    Science.gov (United States)

    Abdollahi, Alireza; Ehsani, Naser; Valefi, Zia; Khalifesoltani, Ali

    2017-05-01

    A SiC nanoparticle toughened-SiC/MoSi2-SiC functionally graded oxidation protective coating on graphite was prepared by reactive melt infiltration (RMI) at 1773 and 1873 K under argon atmosphere. The phase composition and anti-oxidation behavior of the coatings were investigated. The results show that the coating was composed of MoSi2, α-SiC and β-SiC. By the variations of Gibbs free energy (calculated by HSC Chemistry 6.0 software), it could be suggested that the SiC coating formed at low temperatures by solution-reprecipitation mechanism and at high temperatures by gas-phase reactions and solution-reprecipitation mechanisms simultaneously. SiC nanoparticles could improve the oxidation resistance of SiC/MoSi2-SiC multiphase coating. Addition of SiC nanoparticles increases toughness of the coating and prevents spreading of the oxygen diffusion channels in the coating during the oxidation test. The mass loss and oxidation rate of the SiC nanoparticle toughened-SiC/MoSi2-SiC-coated sample after 10-h oxidation at 1773 K were only 1.76% and 0.32 × 10-2 g/cm3/h, respectively.

  3. Critical thickness of transition from 2D to 3D growth and peculiarities of quantum dots formation in GexSi1-x/Sn/Si and Ge1-ySny/Si systems

    Science.gov (United States)

    Lozovoy, Kirill A.; Kokhanenko, Andrey P.; Voitsekhovskii, Alexander V.

    2018-03-01

    Nowadays using of tin as one of the deposited materials in GeSi/Sn/Si, GeSn/Si and GeSiSn/Si material systems is one of the most topical problems. These materials are very promising for various applications in nanoelectronics and optoelectronics due to possibility of band gap management and synthesis of direct band semiconductors within these systems. However, there is a lack of theoretical investigations devoted to the peculiarities of germanium on silicon growth in the presence of tin. In this paper a new theoretical approach for modeling growth processes of binary and ternary semiconductor compounds during the molecular beam epitaxy in these systems is presented. The established kinetic model based on the general nucleation theory takes into account the change in physical and mechanical parameters, diffusion coefficient and surface energies in the presence of tin. With the help of the developed model the experimentally observed significant decrease in the 2D-3D transition temperatures for GeSiSn/Si system compared to GeSi/Si system is theoretically explained for the first time in the literature. Besides that, the derived expressions allow one to explain the experimentally observed temperature dependencies of the critical thickness, as well as to predict the average size and surface density of quantum dots for different contents and temperatures in growth experiment, that confirms applicability of the model proposed. Moreover, the established model can be easily applied to other material systems in which the Stranski-Krastanow growth mode occurs.

  4. Electron Spin Coherence Times in Si/SiGe Quantum Dots

    Science.gov (United States)

    Jock, R. M.; He, Jianhua; Tyryshkin, A. M.; Lyon, S. A.; Lee, C.-H.; Huang, S.-H.; Liu, C. W.

    2014-03-01

    Single electron spin states in silicon have shown a great deal of promise as qubits due to their long spin relaxation (T1) and coherence (T2) times. Recent results exhibit a T2 of 250 us for electrons confined in Si/SiGe quantum dots at 350 mK. These experiments used conventional X-band (10 GHz) pulsed Electron Spin Resonance on a large area (3.5 mm x 20 mm), dual-gated, undoped Si/SiGe heterostructure quantum dots. These dots are induced in a natural Si quantum well by e-beam defined gates having a lithographic radius of 150 nm and pitch of 700 nm. The relatively large size of these dots led to closely spaced energy levels and long T2's could only be measured at sub-Kelvin temperatures. At 2K confined electrons displayed a 3 us T2, which is comparable to that of 2D electrons at that temperature. Decreasing the quantum dot size increases the electron confinement and reduces the effects of valley-splitting and spin-orbit coupling on the electron spin coherence times. We will report results on dots with 80 nm lithographic radii and a 375 nm pitch. This device displays an extended electron coherence time of 30 us at 2K, suggesting tighter confinement of electrons. Further measurements at lower temperatures are in progress. This work was supported in part by NSF through the Materials World Network program (DMR-1107606) and the Princeton MRSEC (DMR-0819860), and in part by the U.S. Army Research Office (W911NF-13-1-0179).

  5. Growth of CNTs on Fe-Si catalyst prepared on Si and Al coated Si substrates

    International Nuclear Information System (INIS)

    Teng, F-Y; Ting, J-M; Sharma, Sahendra P; Liao, Kun-Hou

    2008-01-01

    In this paper we report the effect of Al interlayers on the growth characteristics of carbon nanotubes (CNTs) using as-deposited and plasma etched Fe-Si catalyst films as the catalysts. Al interlayers having various thicknesses ranging from 2 to 42 nm were deposited on Si substrates prior to the deposition of Fe-Si catalysts. It was found that the Al interlayer diffuses into the Fe-Si catalyst during the plasma etching prior to the CNT growth, leading to the swelling and amorphization of the catalyst. This allows enhanced carbon diffusion in the catalyst and therefore a faster growth rate of the resulting CNTs. It was also found that use of an Al interlayer having a thickness of ∼3 ± 1 nm is most effective. Due to the effectiveness of this, the normally required catalyst etching is no longer needed for the growth of CNTs

  6. Growth of CNTs on Fe-Si catalyst prepared on Si and Al coated Si substrates.

    Science.gov (United States)

    Teng, F-Y; Ting, Jyh-Ming; Sharma, Sahendra P; Liao, Kun-Hou

    2008-03-05

    In this paper we report the effect of Al interlayers on the growth characteristics of carbon nanotubes (CNTs) using as-deposited and plasma etched Fe-Si catalyst films as the catalysts. Al interlayers having various thicknesses ranging from 2 to 42 nm were deposited on Si substrates prior to the deposition of Fe-Si catalysts. It was found that the Al interlayer diffuses into the Fe-Si catalyst during the plasma etching prior to the CNT growth, leading to the swelling and amorphization of the catalyst. This allows enhanced carbon diffusion in the catalyst and therefore a faster growth rate of the resulting CNTs. It was also found that use of an Al interlayer having a thickness of ∼3 ± 1 nm is most effective. Due to the effectiveness of this, the normally required catalyst etching is no longer needed for the growth of CNTs.

  7. Thermodynamic modeling of Al–U–X (X = Si,Zr)

    International Nuclear Information System (INIS)

    Rabin, Daniel; Shneck, Roni Z.; Rafailov, Gennady; Dahan, Isaac; Meshi, Louisa; Brosh, Eli

    2015-01-01

    Highlights: • Thermodynamic models of the U–Al–Si and U–Al–Zr systems were constructed. • The extrapolation methods of the ternary liquid phase were explored. • The order–disorder transition of the U(Al,Si) 3 phase was modeled. • New experiments fix the composition of U(Al,Si) 3 in equilibrium with Al and Si. • Effects of Si on microstructures of solidified U–Al alloys are clarified. - Abstract: Thermodynamic models are constructed for the U–Al–Si and U–A–Zr ternary alloy systems using the CALPHAD (CALculation of PHAse Diagrams) method. For the U–Al–Zr system the modeling covers only the aluminum-rich corner (from 100 at% to 67 at% Al) and is based only on literature data. For the U–Al–Si system, the whole range of compositions is covered and new key experiments were done in the uranium-poor region of the U–Al–Si system. These experiments have shown that under conditions of equilibrium with Al and Si, the Si-content of the U(Al,Si) 3 is significantly higher than reported by earlier works. Different extrapolation methods were tried for the Gibbs energy of the liquid phase. However, it was found that for the U–Al–Si and U–Al–Zr systems, symmetric Muggianu method and the asymmetric method by Hillert give similar predictions. The constructed thermodynamic database was investigated by calculating isothermal sections, vertical sections and the liquidus projection. The calculated diagrams are in reasonable agreement with experimental data. Finally, solidification simulation (Scheil simulation) was done in order to assess the phases obtained in solidification as a function of the silicon addition to U–Al alloys

  8. Thermodynamic modeling of Al–U–X (X = Si,Zr)

    Energy Technology Data Exchange (ETDEWEB)

    Rabin, Daniel; Shneck, Roni Z. [Department of Materials Engineering, Ben-Gurion University of the Negev, P.O. Box 653, Beer-Sheva 84105 (Israel); Rafailov, Gennady [Department of Materials Engineering, Ben-Gurion University of the Negev, P.O. Box 653, Beer-Sheva 84105 (Israel); NRCN, P.O. Box 9001, Beer-Sheva 84190 (Israel); Dahan, Isaac [NRCN, P.O. Box 9001, Beer-Sheva 84190 (Israel); Meshi, Louisa [Department of Materials Engineering, Ben-Gurion University of the Negev, P.O. Box 653, Beer-Sheva 84105 (Israel); Brosh, Eli, E-mail: ebrosh1@gmail.com [NRCN, P.O. Box 9001, Beer-Sheva 84190 (Israel)

    2015-09-15

    Highlights: • Thermodynamic models of the U–Al–Si and U–Al–Zr systems were constructed. • The extrapolation methods of the ternary liquid phase were explored. • The order–disorder transition of the U(Al,Si){sub 3} phase was modeled. • New experiments fix the composition of U(Al,Si){sub 3} in equilibrium with Al and Si. • Effects of Si on microstructures of solidified U–Al alloys are clarified. - Abstract: Thermodynamic models are constructed for the U–Al–Si and U–A–Zr ternary alloy systems using the CALPHAD (CALculation of PHAse Diagrams) method. For the U–Al–Zr system the modeling covers only the aluminum-rich corner (from 100 at% to 67 at% Al) and is based only on literature data. For the U–Al–Si system, the whole range of compositions is covered and new key experiments were done in the uranium-poor region of the U–Al–Si system. These experiments have shown that under conditions of equilibrium with Al and Si, the Si-content of the U(Al,Si){sub 3} is significantly higher than reported by earlier works. Different extrapolation methods were tried for the Gibbs energy of the liquid phase. However, it was found that for the U–Al–Si and U–Al–Zr systems, symmetric Muggianu method and the asymmetric method by Hillert give similar predictions. The constructed thermodynamic database was investigated by calculating isothermal sections, vertical sections and the liquidus projection. The calculated diagrams are in reasonable agreement with experimental data. Finally, solidification simulation (Scheil simulation) was done in order to assess the phases obtained in solidification as a function of the silicon addition to U–Al alloys.

  9. Water droplet behavior on superhydrophobic SiO2 nanocomposite films during icing/deicing cycles

    NARCIS (Netherlands)

    Lazauskas, A.; Guobiene, A.; Prosycevas, I.; Baltrusaitis, V.; Grigaliunas, V.; Narmontas, P.; Baltrusaitis, Jonas

    2013-01-01

    This work investigates water droplet behavior on superhydrophobic (water contact angle value of 162 ± 1°) SiO2 nanocomposite films subjected to repetitive icing/deicing treatments, changes in SiO2 nanocomposite film surface morphology and their non-wetting characteristics. During the experiment,

  10. Study of heavy ion fusion: application to the system 28Si + 28Si

    International Nuclear Information System (INIS)

    Plagnol, E.

    1982-03-01

    Study of the fusion reactions between medium mass range heavy ions (experiments on 56 Ni compound nucleus formed by the reaction 28 Si + 28 Si): - analysis of the properties of the compound nucleus de-excitation process: utilization of the evaporation model based on the Hauser-Fesbach statistical model; study of the evolution of the production cross sections of the evaporation residues as a function of the excitation energy and of the angular momentum; - analysis of the kinetics of the compound nucleus formation, with construction of a model describing the various observed regimes, as a function of energy, in the compound nucleus formation cross section: study of the properties of the rotating liquid drop and of the formation kinetics evolution of the nuclei under Coulomb and nuclear potentials, up to a minimal approach distance, sticking conditions, and development towards scission or equilibrium state (compound nucleus) [fr

  11. Progress in the development of a SiC{sub f}/SiC creep test

    Energy Technology Data Exchange (ETDEWEB)

    Hamilton, M.L.; Lewinsohn, C.A.; Jones, R.H.; Youngblood, G.E.; Garner, F.A. [Pacific Northwest National Lab., Richland, WA (United States); Hecht, S.L.

    1996-10-01

    An effort is now underway to design an experiment that will allow the irradiation creep behavior of SiC{sub f}/SiC composites to be quantified. Numerous difficulties must be overcome to achieve this goal, including determining an appropriate specimen geometry that will fit their radiation volumes available and developing a fabrication procedure for such a specimen. A specimen design has been selected, and development of fabrication methods is proceeding. Thermal and stress analyses are being performed to evaluate the viability of the specimen and to assist with determining the design parameters. A possible alternate type of creep test is also being considered. Progress in each of these areas is described in this report.

  12. Progress in the development of a SiCf/SiC creep test

    International Nuclear Information System (INIS)

    Hamilton, M.L.; Lewinsohn, C.A.; Jones, R.H.; Youngblood, G.E.; Garner, F.A.; Hecht, S.L.

    1996-01-01

    An effort is now underway to design an experiment that will allow the irradiation creep behavior of SiC f /SiC composites to be quantified. Numerous difficulties must be overcome to achieve this goal, including determining an appropriate specimen geometry that will fit their radiation volumes available and developing a fabrication procedure for such a specimen. A specimen design has been selected, and development of fabrication methods is proceeding. Thermal and stress analyses are being performed to evaluate the viability of the specimen and to assist with determining the design parameters. A possible alternate type of creep test is also being considered. Progress in each of these areas is described in this report

  13. Electronics for the Si detectors in APEX

    International Nuclear Information System (INIS)

    Wilt, P.R.; Betts, R.R.; Freer, M.

    1994-01-01

    APEX (ATLAS Positron EXperiment), a collaborative effort of ANL, FSU, MSU/NSCL, Princeton, Queen's, Rochester, Washington and Yale, is an experiment to study positron and electron production in very heavy ion collisions. The electrons and positrons are detected with two detector arrays, each consisting of 216 1 mm thick Si PIN diodes, and their energy and time-of-flight are measured. The number of detectors and limited space made it necessary to develop a system that could efficiently process and transfer signals from the detectors to the charge sensing ADC's and data readout electronics as well as monitor the condition of the detectors. The discussion will cover the electronics designed for the Si detectors, including the charge amplifier, ''Mother board'' for the charge amplifiers, 8 channel Shaper, 16 channel Constant Fraction Discriminator (CFD), 16 channel Peak-to-FERA (PTF) and the integration of the CFD and PTF with Charge sensing ADC's. Function and performance of the individual modules as well as the system as a whole will be discussed

  14. XRD analysis of strained Ge-SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(0 0 1) substrates

    International Nuclear Information System (INIS)

    Franco, N.; Barradas, N.P.; Alves, E.; Vallera, A.M.; Morris, R.J.H.; Mironov, O.A.; Parker, E.H.C.

    2005-01-01

    Ge/Si 1-x Ge x inverted modulation doped heterostructures with Ge channel thickness of 16 and 20 nm were grown by a method of hybrid epitaxy followed by ex situ annealing at 650 deg. C for p-HMOS application. The thicker layers of the virtual substrate (6000 nm graded SiGe up to x = 0.6 and 1000 nm uniform composition with x = 0.6) were produced by ultrahigh vacuum chemical vapor deposition (UHV-CVD) while the thinner, Si(2 nm)-SiGe(20 nm)-Ge-SiGe(15 nm + 5 nm B-doped + 20 nm) active layers were grown by low temperature solid-source (LT-SS) MBE at T = 350 deg. C. As-grown and annealed samples were measured by X-ray diffraction (XRD). Reciprocal space maps (RSMs) allowed us to determine non-destructively the precise composition (∼1%) and strain of the Ge channel, along with similar information regarding the other layers that made up the whole structure. Layer thickness was determined with complementary high-resolution Rutherford backscattering (RBS) experiments

  15. Dissolution of Si in Molten Al with Gas Injection

    Science.gov (United States)

    Seyed Ahmadi, Mehran

    Silicon is an essential component of many aluminum alloys, as it imparts a range of desirable characteristics. However, there are considerable practical difficulties in dissolving solid Si in molten Al, because the dissolution process is slow, resulting in material and energy losses. It is thus essential to examine Si dissolution in molten Al, to identify means of accelerating the process. This thesis presents an experimental study of the effect of Si purity, bath temperature, fluid flow conditions, and gas stirring on the dissolution of Si in molten Al, plus the results of physical and numerical modeling of the flow to corroborate the experimental results. The dissolution experiments were conducted in a revolving liquid metal tank to generate a bulk velocity, and gas was introduced into the melt using top lance injection. Cylindrical Si specimens were immersed into molten Al for fixed durations, and upon removal the dissolved Si was measured. The shape and trajectory of injected bubbles were examined by means of auxiliary water experiments and video recordings of the molten Al free surface. The gas-agitated liquid was simulated using the commercial software FLOW-3D. The simulation results provide insights into bubble dynamics and offer estimates of the fluctuating velocities within the Al bath. The experimental results indicate that the dissolution rate of Si increases in tandem with the melt temperature and bulk velocity. A higher bath temperature increases the solubility of Si at the solid/liquid interface, resulting in a greater driving force for mass transfer, and a higher liquid velocity decreases the resistance to mass transfer via a thinner mass boundary layer. Impurities (with lower diffusion coefficients) in the form of inclusions obstruct the dissolution of the Si main matrix. Finally, dissolution rate enhancement was observed by gas agitation. It is postulated that the bubble-induced fluctuating velocities disturb the mass boundary layer, which

  16. SI units in engineering and technology

    CERN Document Server

    Qasim, S H

    2016-01-01

    SI Units in Engineering and Technology focuses on the use of the International System of Units-Systeme International d'Unités (SI). The publication first elaborates on the SI, derivation of important engineering units, and derived SI units in science and engineering. Discussions focus on applied mechanics in mechanical engineering, electrical and magnetic units, stress and pressure, work and energy, power and force, and magnitude of SI units. The text then examines SI units conversion tables and engineering data in SI units. Tables include details on the sectional properties of metals in SI units, physical properties of important molded plastics, important physical constants expressed in SI units, and temperature, area, volume, and mass conversion. Tables that show the mathematical constants, standard values expressed in SI units, and Tex count conversion are also presented. The publication is a dependable source of data for researchers interested in the use of the International System of Units-Systeme Inter...

  17. NMR study of novel heavy fermion superconductor CePt{sub 3}Si

    Energy Technology Data Exchange (ETDEWEB)

    Ueda, K. [Graduate School of Material Science, University of Hyogo, Kamigori-cho, Ako-gun, Hyogo 678-1297 (Japan)]. E-mail: ueda@sci.u-hyogo.ac.jp; Kohara, T. [Graduate School of Material Science, University of Hyogo, Kamigori-cho, Ako-gun, Hyogo 678-1297 (Japan); Motoyama, G. [Graduate School of Material Science, University of Hyogo, Kamigori-cho, Ako-gun, Hyogo 678-1297 (Japan); Oda, Y. [Graduate School of Material Science, University of Hyogo, Kamigori-cho, Ako-gun, Hyogo 678-1297 (Japan)

    2007-03-15

    Si29 NMR experiments were performed to study microscopically the normal and superconducting states in Si29 enriched CePt{sub 3}Si. A Si29 Knight shift parallel to the c-axis did not decrease below the T{sub c}. The 1/T{sub 1} result taken with a field cycling method showed no distinct coherence peak just below T{sub c} and a steep decrease below T{sub c} on cooling. The estimated value of the superconducting energy gap was about 2{delta}=3.6k{sub B}T{sub c}. These results may be an evidence for triplet pairing superconductivity.

  18. Construction and characterization of spherical Si solar cells combined with SiC electric power inverter

    Science.gov (United States)

    Oku, Takeo; Matsumoto, Taisuke; Hiramatsu, Kouichi; Yasuda, Masashi; Shimono, Akio; Takeda, Yoshikazu; Murozono, Mikio

    2015-02-01

    Spherical silicon (Si) photovoltaic solar cell systems combined with an electric power inverter using silicon carbide (SiC) field-effect transistor (FET) were constructed and characterized, which were compared with an ordinary Si-based converter. The SiC-FET devices were introduced in the direct current-alternating current (DC-AC) converter, which was connected with the solar panels. The spherical Si solar cells were used as the power sources, and the spherical Si panels are lighter and more flexible compared with the ordinary flat Si solar panels. Conversion efficiencies of the spherical Si solar cells were improved by using the SiC-FET.

  19. Fluorescence imaging as a diagnostic of M-band x-ray drive condition in hohlraum with fluorescent Si targets

    International Nuclear Information System (INIS)

    Li, Qi; Hu, Zhimin; Yao, Li; Huang, Chengwu; Yuan, Zheng; Zhao, Yang; Xiong, Gang; Qing, Bo; Lv, Min; Zhu, Tuo; Deng, Bo; Li, Jin; Wei, Minxi; Zhan, Xiayu; Li, Jun; Yang, Yimeng; Su, Chunxiao; Yang, Guohong; Zhang, Jiyan; Li, Sanwei

    2017-01-01

    Fluorescence imaging of surrogate Si-doped CH targets has been used to provide a measurement for drive condition of high-energy x-ray (i.e. M-band x-ray) drive symmetry upon the capsule in hohlraum on Shenguang-II laser facility. A series of experiments dedicated to the study of photo-pumping and fluorescence effect in Si-plasma are presented. To investigate the feasibility of fluorescence imaging in Si-plasma, an silicon plasma in Si-foil target is pre-formed at ground state by the soft x-ray from a half-hohlraum, which is then photo-pumped by the K-shell lines from a spatially distinct laser-produced Si-plasma. The resonant Si photon pump is used to improve the fluorescence signal and cause visible image in the Si-foil. Preliminary fluorescence imaging of Si-ball target is performed in both Si-doped and pure Au hohlraum. The usual capsule at the center of the hohlraum is replaced with a solid Si-doped CH-ball (Si-ball). Since the fluorescence is proportional to the photon pump upon the Si-plasma, high-energy x-ray drive symmetry is equal to the fluorescence distribution of the Si-ball. (paper)

  20. Electrochemical characteristics of nc-Si/SiC composite for anode electrode of lithium ion batteries

    International Nuclear Information System (INIS)

    Jeon, Bup Ju; Lee, Joong Kee

    2014-01-01

    Graphical abstract: Cycling performances and coulombic efficiencies of the nc-Si/SiC composite anodes at different CH 4 /SiH 4 mole ratios. -- Highlights: • Our work has focused on irreversible discharge capacity and capacity retention of nc-Si/SiC composite particles. • Particles comprised a mixed construction of nc-Si/SiC structure with dual phases. • The SiC phase acted as retarding media, leading to enhanced cycle stability. -- Abstract: nc-Si/SiC composite particles were prepared as an anode material for lithium ion batteries using a plasma jet with DC arc discharge. The composition of the nc-Si/SiC composite particles was controlled by setting the mole ratio of CH 4 and SiH 4 precursor gases. X-ray diffraction, TEM images, and Raman shift analyses revealed that the synthesized nc-Si/SiC composite particles comprised a construction of nano-nocaled structure with crystalline phases of active silicon, highly disordered amorphous carbon of graphite and crystalline phases of β-SiC. In the experimental range examined, the nc-Si/SiC composite particles showed good coulombic efficiency in comparison with particles high Si–Si bonding content due to the interplay of particles with a small proportion of carbon and the buffering effect against volume expansion by structural stabilization, and played a role as retarding media for the rapid electrochemical reactions of the SiC crystal against lithium

  1. Electrochemical characteristics of nc-Si/SiC composite for anode electrode of lithium ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Bup Ju [Department of Energy Resources, Shinhan University, 233-1, Sangpae-dong, Dongducheon, Gyeonggi-do, 483-777 (Korea, Republic of); Lee, Joong Kee, E-mail: leejk@kist.re.kr [Advanced Energy Materials Processing Laboratory, Center for Energy Convergence Research, Green City Technology Institute, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of)

    2014-03-25

    Graphical abstract: Cycling performances and coulombic efficiencies of the nc-Si/SiC composite anodes at different CH{sub 4}/SiH{sub 4} mole ratios. -- Highlights: • Our work has focused on irreversible discharge capacity and capacity retention of nc-Si/SiC composite particles. • Particles comprised a mixed construction of nc-Si/SiC structure with dual phases. • The SiC phase acted as retarding media, leading to enhanced cycle stability. -- Abstract: nc-Si/SiC composite particles were prepared as an anode material for lithium ion batteries using a plasma jet with DC arc discharge. The composition of the nc-Si/SiC composite particles was controlled by setting the mole ratio of CH{sub 4} and SiH{sub 4} precursor gases. X-ray diffraction, TEM images, and Raman shift analyses revealed that the synthesized nc-Si/SiC composite particles comprised a construction of nano-nocaled structure with crystalline phases of active silicon, highly disordered amorphous carbon of graphite and crystalline phases of β-SiC. In the experimental range examined, the nc-Si/SiC composite particles showed good coulombic efficiency in comparison with particles high Si–Si bonding content due to the interplay of particles with a small proportion of carbon and the buffering effect against volume expansion by structural stabilization, and played a role as retarding media for the rapid electrochemical reactions of the SiC crystal against lithium.

  2. Circumferential tensile test method for mechanical property evaluation of SiC/SiC tube

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Ju-Hyeon, E-mail: 15096018@mmm.muroran-it.ac.jp [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Kishimoto, Hirotatsu [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Park, Joon-soo [OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Nakazato, Naofumi [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Kohyama, Akira [OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan)

    2016-11-01

    Highlights: • NITE SiC/SiC cooling channel system to be a candidate of divertor system in future. • Hoop strength is one of the important factors for a tube. • This research studies the relationship between deformation and strain of SiC/SiC tube. - Abstract: SiC fiber reinforced/SiC matrix (SiC/SiC) composite is expected to be a candidate material for the first-wall, components in the blanket and divertor of fusion reactors in future. In such components, SiC/SiC composites need to be formed to be various shapes. SiC/SiC tubes has been expected to be employed for blanket and divertor after DEMO reactor, but there is not established mechanical investigation technique. Recent progress of SiC/SiC processing techniques is likely to realize strong, having gas tightness SiC/SiC tubes which will contribute for the development of fusion reactors. This research studies the relationship between deformation and strain of SiC/SiC tube using a circumferential tensile test method to establish a mechanical property investigation method of SiC/SiC tubes.

  3. Si, Ge and SiGe wires for sensor application

    International Nuclear Information System (INIS)

    Druzhinin, A.A.; Khoverko, Yu.M.; Ostrovskii, I.P.; Nichkalo, S.I.; Nikolaeva, A.A.; Konopko, L.A.; Stich, I.

    2011-01-01

    Resistance and magnetoresistance of Si, Ge and Si-Ge micro- and nanowires were studied in temperature range 4,2-300 K at magnetic fields up to 14 T. The wires diameters range from 200 nm to 20 μm. Ga-In gates were created to wires and ohmic I-U characteristics were observed in all temperature range. It was found high elastic strain for Ge nanowires (of about 0,7%) as well as high magnitude of magnetoresistance (of about 250% at 14 T), which was used to design multifunctional sensor of simultaneous measurements of strain and magnetic field intensity. (authors)

  4. Doping effect in Si nanocrystals

    Science.gov (United States)

    Li, Dongke; Xu, Jun; Zhang, Pei; Jiang, Yicheng; Chen, Kunji

    2018-06-01

    Intentional doping in semiconductors is a fundamental issue since it can control the conduction type and ability as well as modify the optical and electronic properties. To realize effective doping is the basis for developing semiconductor devices. However, by reducing the size of a semiconductor, like Si, to the nanometer scale, the doping effects become complicated due to the coupling between the quantum confinement effect and the surfaces and/or interfaces effect. In particular, by introducing phosphorus or boron impurities as dopants into material containing Si nanocrystals with a dot size of less than 10 nm, it exhibits different behaviors and influences on the physical properties from its bulk counterpart. Understanding the doping effects in Si nanocrystals is currently a challenge in order to further improve the performance of the next generation of nano-electronic and photonic devices. In this review, we present an overview of the latest theoretical studies and experimental results on dopant distributions and their effects on the electronic and optical properties of Si nanocrystals. In particular, the advanced characterization techniques on dopant distribution, the carrier transport process as well as the linear and nonlinear optical properties of doped Si nanocrystals, are systematically summarized.

  5. Characterization of β-FeSi II films as a novel solar cell semiconductor

    Science.gov (United States)

    Fukuzawa, Yasuhiro; Ootsuka, Teruhisa; Otogawa, Naotaka; Abe, Hironori; Nakayama, Yasuhiko; Makita, Yunosuke

    2006-04-01

    β-FeSi II is an attractive semiconductor owing to its extremely high optical absorption coefficient (α>10 5 cm -1), and is expected to be an ideal semiconductor as a thin film solar cell. For solar cell use, to prepare high quality β-FeSi II films holding a desired Fe/Si ratio, we chose two methods; one is a molecular beam epitaxy (MBE) method in which Fe and Si were evaporated by using normal Knudsen cells, and occasionally by e-gun for Si. Another one is the facing-target sputtering (FTS) method in which deposition of β-FeSi II films is made on Si substrate that is placed out of gas plasma cloud. In both methods to obtain β-FeSi II films with a tuned Fe/Si ratio, Fe/Si super lattice was fabricated by varying Fe and Si deposition thickness. Results showed significant in- and out-diffusion of host Fe and Si atoms at the interface of Si substrates into β-FeSi II layers. It was experimentally demonstrated that this diffusion can be suppressed by the formation of template layer between the epitaxial β-FeSi II layer and the substrate. The template layer was prepared by reactive deposition epitaxy (RDE) method. By fixing the Fe/Si ratio as precisely as possible at 1/2, systematic doping experiments of acceptor (Ga and B) and donor (As) impurities into β-FeSi II were carried out. Systematical changes of electron and hole carrier concentration in these samples along variation of incorporated impurities were observed through Hall effect measurements. Residual carrier concentrations can be ascribed to not only the remaining undesired impurities contained in source materials but also to a variety of point defects mainly produced by the uncontrolled stoichiometry. A preliminary structure of n-β-FeSi II/p-Si used as a solar cell indicated a conversion efficiency of 3.7%.

  6. Thermoelectric energy conversion in layered structures with strained Ge quantum dots grown on Si surfaces

    Science.gov (United States)

    Korotchenkov, Oleg; Nadtochiy, Andriy; Kuryliuk, Vasyl; Wang, Chin-Chi; Li, Pei-Wen; Cantarero, Andres

    2014-03-01

    The efficiency of the energy conversion devices depends in many ways on the materials used and various emerging cost-effective nanomaterials have promised huge potentials in highly efficient energy conversion. Here we show that thermoelectric voltage can be enhanced by a factor of 3 using layer-cake growth of Ge quantum dots through thermal oxidation of SiGe layers stacked in SiO2/Si3N4 multilayer structure. The key to achieving this behavior has been to strain the Ge/Si interface by Ge dots migrating to Si substrate. Calculations taking into account the carrier trapping in the dot with a quantum transmission into the neighboring dot show satisfactory agreement with experiments above ≈200 K. The results may be of interest for improving the functionality of thermoelectric devices based on Ge/Si.

  7. Fracture behavior of C/SiC composites at elevated temperature

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Dong Hyun; Lee, Jeong Won; Kim, Jae Hoon; Shin, Ihn Cheol; Lim, Byung Joo [Chungnam National University, Daejeon (Korea, Republic of)

    2017-08-15

    The fracture behavior of carbon fiber-reinforced silicon carbide (C/SiC) composites used in rocket nozzles has been investigated under tension, compression, and fracture conditions at room temperature, 773 K and 1173 K. The C/SiC composites used in this study were manufactured by liquid silicon infiltration process at ~1723 K. All experiments were conducted using two types of specimens, considering fiber direction and oxidation condition. Experimental results show that temperature, fiber direction, and oxidation condition affect the behavior of C/SiC composites. Oxidation was found to be the main factor that changes the strength of C/SiC composites. By applying an anti-oxidation coating, the tensile and compressive strengths of the C/SiC composites increased with temperature. The fracture toughness of the C/SiC composites also increased with increase temperature. A fractography analysis of the fractured specimens was conducted using a scanning electron microscope.

  8. Potential thermoelectric material open framework Si24 from a first-principles study

    International Nuclear Information System (INIS)

    Ouyang, Tao; Zhang, Pei; Xiao, Huaping; Tang, Chao; Li, Jin; He, Chaoyu; Zhong, Jianxin

    2017-01-01

    Open framework Si 24 is a new synthesis cage-like silicon allotrope with a quasi-direct bandgap and predicted to exhibit outstanding adsorption efficiency, foreshowing the potential applications in the photovoltaic community. In this paper, the thermoelectric property of such new Si structures is investigated by combining first-principles calculation and semiclassical Boltzmann transport theory. The calculations show that the Si 24 possesses a superb Seebeck coefficient, and obviously anisotropic electronic conductivity. Owing to more energy extremums existing in the conduction band region, the power factor of Si 24 in the n-type doping is always better than that in p-type samples. Anisotropic phonon transport property is observed as well in Si 24 with average lattice thermal conductivity of 45.35 W m −1 K −1 at room temperature. Based on the electron relaxation time estimated from the experiment, the thermoelectric figure of merit of Si 24 is found to be as high as 0.69 (n-type doping at 700 K) and 0.51 (p-type doping at 700 K) along the xx crystal direction, which is about two orders of magnitude larger than that of diamond Si ( d -Si). The findings presented in this work shed light on the thermoelectric performance of Si 24 and qualify that such new Si allotrope is a promising platform for achieving the recombination of photovoltaic and thermoelectric technologies together. (paper)

  9. Bucky gel actuator displacement: experiment and model

    International Nuclear Information System (INIS)

    Ghamsari, A K; Zegeye, E; Woldesenbet, E; Jin, Y

    2013-01-01

    Bucky gel actuator (BGA) is a dry electroactive nanocomposite which is driven with a few volts. BGA’s remarkable features make this tri-layered actuator a potential candidate for morphing applications. However, most of these applications would require a better understanding of the effective parameters that influence the BGA displacement. In this study, various sets of experiments were designed to investigate the effect of several parameters on the maximum lateral displacement of BGA. Two input parameters, voltage and frequency, and three material/design parameters, carbon nanotube type, thickness, and weight fraction of constituents were selected. A new thickness ratio term was also introduced to study the role of individual layers on BGA displacement. A model was established to predict BGA maximum displacement based on the effect of these parameters. This model showed good agreement with reported results from the literature. In addition, an important factor in the design of BGA-based devices, lifetime, was investigated. (paper)

  10. Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation

    Science.gov (United States)

    Akiyama, Toru; Hori, Shinsuke; Nakamura, Kohji; Ito, Tomonori; Kageshima, Hiroyuki; Uematsu, Masashi; Shiraishi, Kenji

    2018-04-01

    The reaction processes at the interface between SiC with 4H structure (4H-SiC) and SiO2 during wet oxidation are investigated by electronic structure calculations within the density functional theory. Our calculations for 4H-SiC/SiO2 interfaces with various orientations demonstrate characteristic features of the reaction depending on the crystal orientation of SiC: On the Si-face, the H2O molecule is stable in SiO2 and hardly reacts with the SiC substrate, while the O atom of H2O can form Si-O bonds at the C-face interface. Two OH groups are found to be at least necessary for forming new Si-O bonds at the Si-face interface, indicating that the oxidation rate on the Si-face is very low compared with that on the C-face. On the other hand, both the H2O molecule and the OH group are incorporated into the C-face interface, and the energy barrier for OH is similar to that for H2O. By comparing the calculated energy barriers for these reactants with the activation energies of oxide growth rate, we suggest the orientation-dependent rate-limiting processes during wet SiC oxidation.

  11. Analyses of the As doping of SiO{sub 2}/Si/SiO{sub 2} nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ruffino, Francesco; Miritello, Maria [CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy); Tomasello, Mario Vincenzo [Scuola Superiore di Catania, via San Nullo 5/i, 95123 Catania (Italy); De Bastiani, Riccardo; Grimaldi, Maria Grazia [Dipartimento di Fisica ed Astronomia, Universita di Catania, via S. Sofia 64, 95123 Catania (Italy); CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy); Nicotra, Giuseppe; Spinella, Corrado [Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), VIII Strada 5, 95121 Catania (Italy)

    2011-03-15

    We illustrate the behaviour of As when it is confined, by the implantation technique, in a SiO{sub 2}(70nm)/Si(30nm)/SiO{sub 2}(70nm) multilayer and its spatial redistribution when annealing processes are performed. By Rutherford backscattering spectrometry and Z-contrast transmission electron microscopy we found an As accumulation at the Si/SiO{sub 2} interfaces and at the Si grain boundaries with no segregation of the As in the Si layer. Such an effect is in agreement with a model that assumes a traps distribution in the Si in the first 2-3 nm above the SiO{sub 2}/Si interfaces and along the Si grain boundaries. The traps concentration at the Si/SiO{sub 2} interfaces was estimated in 10{sup 14} traps/cm{sup 2}. The outlined results can open perspectives on the doping properties of As in Si nanocrystals, whose applications in nanoelectronics and optoelectronics are widely investigated (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Series of selenoid valve pneumatic AC 220 volts with disposable contra angle as a replacement for micromotor in preclinic laboratory (experimental study on the health ministry of health polytechnic course D-III department of dental nursing Tasikmalaya

    Directory of Open Access Journals (Sweden)

    Hadiyat Miko

    2016-06-01

    Full Text Available To report on the essential performance characteristics of disposable air turbine handpiece and on aspect of their convenience and safety for preclinical use. The disposable handpiece is not recommended drilling in oral cavity. We use for student practical  in Operative Dentistry at preclinic laboratory. The other side micromotor low speed handpiece used as bur device on the phantom, the problem usually found in preclinik laboratory on practical conservation with the use of micromotor frequent damage to the handpiece (contra angel. Micromotor tend to heat up faster and have a low-speed, so it took a long time to complete the drilling, using the micromotor tend to be less safe because of the power generated from the flow of electricity at any time could damage. The price of  micromotor also is quite expensive. The limitations of the budget funds for maintenance, repair and procurement of mikromotor also became a problem. Based on these problems, the research team made a solution in the form of a replacement tool (substitute micromotor with the aim to resolve the existing problems as well as creating practices preclinic more effectively and efficiently. The use of a simple drill tool in the form of a series of Pneumatic Valve 220 volt (include electric compressor and Selenoid Disposible Handpiece Contra-angles as a new innovation in the laboratory of Dental Nursing. Majors preclinik Health Polytechnic Tasikmalaya  have been applied for last 3 years and have been able to more efficient cost of procurement tool of 70%. This disposible tool is apparently able to drill up to 20 times preparasicavity. This research uses descriptive method. Data collection techniques are used through the question form or questionnaire. Population and sample the study is a students collage 2nd years D-III of department of dental nursing Health Polytechnic Tasikmalaya. From the results of research that the majority of students expressed pleased and satisfied. This

  13. Structural and optical properties of Si-doped Ag clusters

    KAUST Repository

    Mokkath, Junais Habeeb

    2014-03-06

    The structural and optical properties of AgN and Ag N-1Si1 (neutral, cationic, and anionic) clusters (N = 5 to 12) are systematically investigated using the density functional based tight binding method and time-dependent density functional theory, providing insight into recent experiments. The gap between the highest occupied and lowest unoccupied molecular orbitals and therefore the optical spectrum vary significantly under Si doping, which enables flexible tuning of the chemical and optical properties of Ag clusters. © 2014 American Chemical Society.

  14. Structural and optical properties of Si-doped Ag clusters

    KAUST Repository

    Mokkath, Junais Habeeb; Schwingenschlö gl, Udo

    2014-01-01

    The structural and optical properties of AgN and Ag N-1Si1 (neutral, cationic, and anionic) clusters (N = 5 to 12) are systematically investigated using the density functional based tight binding method and time-dependent density functional theory, providing insight into recent experiments. The gap between the highest occupied and lowest unoccupied molecular orbitals and therefore the optical spectrum vary significantly under Si doping, which enables flexible tuning of the chemical and optical properties of Ag clusters. © 2014 American Chemical Society.

  15. High-dose MeV electron irradiation of Si-SiO2 structures implanted with high doses Si+

    Science.gov (United States)

    Kaschieva, S.; Angelov, Ch; Dmitriev, S. N.

    2018-03-01

    The influence was studied of 22-MeV electron irradiation on Si-SiO2 structures implanted with high-fluence Si+ ions. Our earlier works demonstrated that Si redistribution is observed in Si+-ion-implanted Si-SiO2 structures (after MeV electron irradiation) only in the case when ion implantation is carried out with a higher fluence (1016 cm-2). We focused our attention on the interaction of high-dose MeV electron irradiation (6.0×1016 cm-2) with n-Si-SiO2 structures implanted with Si+ ions (fluence 5.4×1016 cm-2 of the same order magnitude). The redistribution of both oxygen and silicon atoms in the implanted Si-SiO2 samples after MeV electron irradiation was studied by Rutherford back-scattering (RBS) spectroscopy in combination with a channeling technique (RBS/C). Our results demonstrated that the redistribution of oxygen and silicon atoms in the implanted samples reaches saturation after these high doses of MeV electron irradiation. The transformation of amorphous SiO2 surface into crystalline Si nanostructures (after MeV electron irradiation) was evidenced by atomic force microscopy (AFM). Silicon nanocrystals are formed on the SiO2 surface after MeV electron irradiation. The shape and number of the Si nanocrystals on the SiO2 surface depend on the MeV electron irradiation, while their size increases with the dose. The mean Si nanocrystals height is 16-20 nm after irradiation with MeV electrons at the dose of 6.0×1016 cm-2.

  16. Thermal shock properties of 2D-SiCf/SiC composites

    International Nuclear Information System (INIS)

    Lee, Sang Pill; Lee, Jin Kyung; Son, In Soo; Bae, Dong Su; Kohyama, Akira

    2012-01-01

    This paper dealt with the thermal shock properties of SiC f /SiC composites reinforced with two dimensional SiC fabrics. SiC f /SiC composites were fabricated by a liquid phase sintering process, using a commercial nano-size SiC powder and oxide additive materials. An Al 2 O 3 –Y 2 O 3 –SiO 2 powder mixture was used as a sintering additive for the consolidation of SiC matrix region. In this composite system, Tyranno SA SiC fabrics were also utilized as a reinforcing material. The thermal shock test for SiC f /SiC composites was carried out at the elevated temperature. Both mechanical strength and microstructure of SiC f /SiC composites were investigated by means of optical microscopy, SEM and three point bending test. SiC f /SiC composites represented a dense morphology with a porosity of about 8.2% and a flexural strength of about 160 MPs. The characterization of SiC f /SiC composites was greatly affected by the history of cyclic thermal shock. Especially, SiC f /SiC composites represented a reduction of flexural strength at the thermal shock temperature difference higher than 800 °C.

  17. High thermal conductivity SiC/SiC composites for fusion applications -- 2

    International Nuclear Information System (INIS)

    Kowbel, W.; Tsou, K.T.; Withers, J.C.; Youngblood, G.E.

    1998-01-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion Structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23--24, 1997. An unirradiated SiC/SiC composite made with MER-developed CVR SiC fiber and a hybrid PIP/CVI SiC matrix exhibited room temperature transverse thermal conductivity of 45 W/mK. An unirradiated SiC/SiC composite made from C/C composite totally CVR-converted to a SiC/SiC composite exhibited transverse thermal conductivity values of 75 and 35 W/mK at 25 and 1000 C, respectively. Both types of SiC/SiC composites exhibited non-brittle failure in flexure testing

  18. 32Si dating of sediments

    International Nuclear Information System (INIS)

    Morgenstern, U.

    2004-01-01

    Brief explanation of the use of 32 Si in the dating of sediments. 32 Si , with a half-life of c.140 years, can be applied in the age range 30-1000 years. An appropriate dating tool for that time range is essential because it includes three very important epochs: the impact of human colonisation and industrialisation during the last 150 years, the Little Ice Age between about 1650 AD and 1850 AD, and the last part of the Medieval Climatic Optimum. 23 refs

  19. SI units in radiation protection

    International Nuclear Information System (INIS)

    Herrmann, D.

    1976-10-01

    In the field of radiation protection all hitherto used units for activity, activity concentrations, exposure, absorbed dose, and dose rates have to be replaced by SI units during the next years. For this purpose graphs and conversion tables are given as well as recommendations on unit combinations preferentially to be used. As to the dose equivalent, it is suggested to introduce a new special unit being 100 times greater than the rem, instead of maintaining the rem or using the gray for both absorbed dose and dose equivalent. Measures and time schedule relating to the gradual transition to SI units in measuring techniques, training, and publishing et cetera are explained. (author)

  20. Cavities at the Si projected range by high dose and energy Si ion implantation in Si

    International Nuclear Information System (INIS)

    Canino, M.; Regula, G.; Lancin, M.; Xu, M.; Pichaud, B.; Ntzoenzok, E.; Barthe, M.F.

    2009-01-01

    Two series of n-type Si samples α and β are implanted with Si ions at high dose (1 x 10 16 ) and high energies, 0.3 and 1.0 MeV, respectively. Both sort of samples are then implanted with 5 x 10 16 He cm -2 (at 10 or 50 keV) and eventually with B atoms. Some of the samples are annealed at temperatures ranging from 800 to 1000 deg. C to allow the thermal growth of He-cavities, located between sample surface and the projected range (R p ) of Si. After the triple ion implantation, which corresponds to defect engineering, samples were characterized by cross-section transmission electron microscopy (XTEM). Voids (or bubbles) are observed not only at the R p (He) on all annealed samples, but also at the R p (Si) on β samples implanted with He at 50 keV. The samples are also studied by positron annihilation spectroscopy (PAS) and the spectra confirm that as-implanted samples contain di-vacancies and that the annealed ones, even at high temperature have bigger open volumes, which are assumed to be the same voids observed by XTEM. It is demonstrated that a sole Si implantation at high energy and dose is efficient to create cavities which are thermally stable up to 1000 deg. C only in the presence of He.

  1. Analysis of Si/SiGe Heterostructure Solar Cell

    Directory of Open Access Journals (Sweden)

    Ashish Kumar Singh

    2014-01-01

    Full Text Available Sunlight is the largest source of carbon-neutral energy. Large amount of energy, about 4.3 × 1020 J/hr (Lewis, 2005, is radiated because of nuclear fusion reaction by sun, but it is unfortunate that it is not exploited to its maximum level. Various photovoltaic researches are ongoing to find low cost, and highly efficient solar cell to fulfil looming energy crisis around the globe. Thin film solar cell along with enhanced absorption property will be the best, so combination of SiGe alloy is considered. The paper presented here consists of a numerical model of Si/Si1-xGex heterostructure solar cell. The research has investigated characteristics such as short circuit current density (Jsc, generation rate (G, absorption coefficient (α, and open circuit voltage (Voc with optimal Ge concentration. The addition of Ge content to Si layer will affect the property of material and can be calculated with the use of Vegard’s law. Due to this, short circuit current density increases.

  2. A Ge-Si active target for the measurement of short lifetimes

    International Nuclear Information System (INIS)

    Amendolia, S.R.; Bedeschi, F.; Bertolucci, E.; Bettoni, D.; Bosisio, L.; Bradaschia, C.; Dell'Orso, M.; Fidecaro, F.; Foa, L.; Focardi, E.; Giannetti, P.; Giorgi, M.A.; Marrocchesi, P.S.; Menzione, A.; Ristori, L.; Scribano, A.; Tenchini, R.; Triggiani, G.; Tonelli, G.; Bologna, G.; D'Ettorre Piazzoli, B.; Mannocchi, G.; Picchi, P.; Consiglio Nazionale delle Ricerche, Turin; D'Angelo, P.; Manfredi, P.F.; Menasce, D.; Meroni, E.; Moroni, L.; Pedrini, D.; Perasso, L.; Sala, S.; Fabbri, F.L.; Enorini, M.; Laurelli, P.; Spillantini, P.; Zallo, A.

    1984-01-01

    A new Ge-Si active target is presently used in the Na1 experiment at CERN to study photoproduction of charmed particles and to measure their lifetimes. Some general comments on the active target technique are made. (orig.)

  3. Development and characterization of HIP joining techniques for Si3N4 materials

    International Nuclear Information System (INIS)

    Sun Woo, J.

    1991-09-01

    The report deals with the development and optimization of reproducible techniques for joining Si 3 N 4 with Si 3 N 4 without interlayers consisting of other materials, applying hot isostatic pressing and vacuum plasma spraying. Furthermore, experiments are reported that have been performed in addition to the above-mentioned, for preparing Si 3 N 4 sintered specimens without sintering additives, applying the HIP technique. The resulting specimens have been tested for their joining characteristics, which are reported. All reported experiments have been performed varying essential parameters such as HIP temperature, pressure, holding time, surface roughness, and heat treatment. Every parameter has been examined individually for its effect on the bonding strength of the prepared Si 3 N 4 -Si 3 N 4 joint, applying 4P bending tests at room temperature and at 1200deg C. (orig./MM) [de

  4. First-principles study of point-defect production in Si and SiC

    International Nuclear Information System (INIS)

    Windl, W.; Lenosky, T.J.; Kress, J.D.; Voter, A.F.

    1998-03-01

    The authors have calculated the displacement-threshold energy E(d) for point-defect production in Si and SiC using empirical potentials, tight-binding, and first-principles methods. They show that -- depending on the knock-on direction -- 64-atom simulation cells can be sufficient to allow a nearly finite-size-effect-free calculation, thus making the use of first-principles methods possible. They use molecular dynamics (MD) techniques and propose the use of a sudden approximation which agrees reasonably well with the MD results for selected directions and which allows estimates of Ed without employing an MD simulation and the use of computationally demanding first-principles methods. Comparing the results with experiment, the authors find the full self-consistent first-principles method in conjunction with the sudden approximation to be a reliable and easy method to predict E d . Furthermore, they have examined the temperature dependence of E d for C in SiC and found it to be negligible

  5. Hidden order and disorder effects in URu2Si2

    Science.gov (United States)

    Bernal, O. O.; Moroz, M. E.; Ishida, K.; Murakawa, H.; Reyes, A. P.; Kuhns, P. L.; MacLaughlin, D. E.; Mydosh, J. A.; Gortenmulder, T. J.

    2006-05-01

    NMR experiments at ambient pressure in URu 2Si 2 demonstrate a linewidth enhancement effect below the hidden order transition temperature T0. We present single-crystal 29Si NMR parameters for various temperatures and for an applied magnetic field perpendicular to the crystal c-axis. By comparing oriented-powder and single-crystal data, we observe that the size of the linewidth enhancement below T0 correlates with the size of the high- T broadening. We measure a 29Si up-field line shift below T0 which indicates the presence of an internal-field average for the entire crystal. This shift also correlates with the high-temperature width. The 101Ru NQR frequency as a function of temperature was also measured. No strong effect on the NQR frequency is observed at T0. Both NMR and NQR measurements suggest a connection between linewidth/disorder effects and the transition to hidden order.

  6. Crystallization of amorphous Fe78Si9B13 alloy

    International Nuclear Information System (INIS)

    Jakubczyk, E; Krajczyk, A; Jakubczyk, M

    2007-01-01

    The crystallization process of Fe 78 Si 9 B 13 metallic glass was investigated by DSC, X-ray diffraction, electrical resistivity, Hall effect and TEM methods. The investigations proved two-stages crystallization. By means of non-isothermal DSC experiments the activation energy and the Avrami exponent were determined for both stages. The created phases: α-Fe(Si) and (Fe,Si) 2 B were identified on the basis of X-ray and TEM investigations. However, TEM observations showed also a little amount of the FeB 49 phase as well as some rest of the amorphous phase. The electrical and Hall resistivities decrease abruptly after the creation of the phases out of the amorphous matrix

  7. Microscopic and macroscopic characterization of the charging effects in SiC/Si nanocrystals/SiC sandwiched structures

    International Nuclear Information System (INIS)

    Xu, Jie; Xu, Jun; Wang, Yuefei; Cao, Yunqing; Li, Wei; Yu, Linwei; Chen, Kunji

    2014-01-01

    Microscopic charge injection into the SiC/Si nanocrystals/SiC sandwiched structures through a biased conductive AFM tip is subsequently characterized by both electrostatic force microscopy and Kelvin probe force microscopy (KPFM). The charge injection and retention characteristics are found to be affected by not only the band offset at the Si nanocrystals/SiC interface but also the doping type of the Si substrate. On the other hand, capacitance–voltage (C–V) measurements investigate the macroscopic charging effect of the sandwiched structures with a thicker SiC capping layer, where the charges are injected from the Si substrates. The calculated macroscopic charging density is 3–4 times that of the microscopic one, and the possible reason is the underestimation of the microscopic charging density caused by the averaging effect and detection delay in the KPFM measurements. (paper)

  8. Pressureless sintering of dense Si3N4 and Si3N4/SiC composites with nitrate additives

    International Nuclear Information System (INIS)

    Kim, J.Y.; Iseki, Takayoshi; Yano, Toyohiko

    1996-01-01

    The effect of aluminum and yttrium nitrate additives on the densification of monolithic Si 3 N 4 and a Si 3 N 4 /SiC composite by pressureless sintering was compared with that of oxide additives. The surfaces of Si 3 N 4 particles milled with aluminum and yttrium nitrates, which were added as methanol solutions, were coated with a different layer containing Al and Y from that of Si 3 N 4 particles milled with oxide additives. Monolithic Si 3 N 4 could be sintered to 94% of theoretical density (TD) at 1,500 C with nitrate additives. The sintering temperature was about 100 C lower than the case with oxide additives. After pressureless sintering at 1,750 C for 2 h in N 2 , the bulk density of a Si 3 N 4 /20 wt% SiC composite reached 95% TD with nitrate additives

  9. Si-O-Si bond-angle distribution in vitreous silica from first-principles 29Si NMR analysis

    International Nuclear Information System (INIS)

    Mauri, Francesco; Pasquarello, Alfredo; Pfrommer, Bernd G.; Yoon, Young-Gui; Louie, Steven G.

    2000-01-01

    The correlation between 29 Si chemical shifts and Si-O-Si bond angles in SiO 2 is determined within density-functional theory for the full range of angles present in vitreous silica. This relation closely reproduces measured shifts of crystalline polymorphs. The knowledge of the correlation allows us to reliably extract from the experimental NMR spectrum the mean (151 degree sign ) and the standard deviation (11 degree sign ) of the Si-O-Si angular distribution of vitreous silica. In particular, we show that the Mozzi-Warren Si-O-Si angular distribution is not consistent with the NMR data. This analysis illustrates the potential of our approach for structural determinations of silicate glasses. (c) 2000 The American Physical Society

  10. SI units in biomedical dosimetry

    International Nuclear Information System (INIS)

    Liden, K.

    1975-01-01

    The International commission on radiation units and measurements (ICRU), during the period from 1953 to 1962 presented its definitions of the quantities absorbed dose, exposure, activity, and dose equivalent and the corresponding special units the rad, the roentgen, the curie, and the rem. At the same time an international practical system of units was developed, Le Systeme International d'Unites (SI). It was adopted by the 11th Conference Generale des Poids et Mesures (CGPM) in 1960 and is now officially introduced in almost all countries. The general implementation of the SI means difficulties for the future use of the special radiation units, because the numerical factors involved prevent their adoption as SI units. In view of this, and after having sampled the opinion in the radiological field, the ICRU prepared a Statement on Units in July, 1974 which was forwarded to the Comite International des Poids et Mesures (CIPM) and its Comite Consultatif des Unites (CCU) for consideration. As a result of this statement the CIPM has now proposed, that the 15rh CGPM adopt special names for two SI units, namely the becquerel, symbol Bq, for the unit of activity of radionuclides equal to the reciprocal second, s 1- , and the gray, symbol Gy, for the unit of absorbed dose equal to the joule per kilogram, J/kg. The 15th CGPM will consider this matter in May, 1975. (author)

  11. Onset of vertical threading dislocations in Si1−xGex/Si (001 at a critical Ge concentration

    Directory of Open Access Journals (Sweden)

    Fabio Isa

    2013-11-01

    Full Text Available We show that the Ge concentration in Si1−xGex alloys grown under strong out-of-equilibrium conditions determines the character of the population of threading dislocations (TDs. Above a critical value x ∼ 0.25 vertical TDs dominate over the common slanted ones. This is demonstrated by exploiting a statistically relevant analysis of TD orientation in micrometer-sized Si1−xGex crystals, deposited on deeply patterned Si(001 substrates. Experiments involving an abrupt change of composition in the middle of the crystals clarify the role of misfit-strain versus chemical composition in favoring the vertical orientation of TDs. A scheme invoking vacancy-mediated climb mechanism is proposed to rationalize the observed behavior.

  12. The influence of a Si cap on self-organized SiGe islands and the underlying wetting layer

    International Nuclear Information System (INIS)

    Brehm, M.; Grydlik, M.; Groiss, H.; Hackl, F.; Schaeffler, F.; Fromherz, T.; Bauer, G.

    2011-01-01

    For the prototypical SiGe/Si(001) Stranski-Krastanow (SK) growth system, the influence of intermixing caused by the deposition of a Si cap layer at temperatures T cap between 300 deg. C and 700 deg. C is studied both for the SiGe wetting layer (WL) and the SiGe islands. Systematic growth experiments were carried out with an ultrahigh resolution of down to 0.005 monolayers (ML) of deposited Ge. The properties of the samples were investigated via photoluminescence (PL) spectroscopy, atomic force microscopy (AFM), and transmission electron microscopy. We studied in detail the influence of T cap in the three main coverage regions of SiGe SK growth, which are (i) the WL build-up regime, (ii) the island nucleation regime, where most of the Ge is supplied via material transfer from the WL, and (iii) the saturation regime, where the WL thickness remains initially stable. At T cap = 300 deg. C, we found that both the WL and the island are essentially preserved in composition and shape, whereas at 500 deg. C the WL becomes heavily alloyed during capping, and at 700 deg. C the islands also become alloyed. At T cap = 500 deg. C we found enhanced WL intermixing in the presence of dome-shaped islands, whereas at T cap 700 deg. C the WL properties become dominated by the dissolution of pyramid-shaped islands upon capping. At Ge coverages above ≅6 ML, we found an unexpected thickening of the WL, almost independently of T cap . This finding suggests that the density and the volume of the dome-shaped islands have an upper limit, beyond which excess Ge from the external source again becomes incorporated into the WL. Finally, we compared PL spectra with AFM-based evaluations of the integral island volumes in order to determine in a straightforward manner the average composition of the SiGe islands.

  13. Thermo-mechanical assessment of full SiC/SiC composite cladding for LWR applications with sensitivity analysis

    Science.gov (United States)

    Singh, Gyanender; Terrani, Kurt; Katoh, Yutai

    2018-02-01

    SiC/SiC composites are considered among leading candidates for accident tolerant fuel cladding in light water reactors. However, when SiC-based materials are exposed to neutron irradiation, they experience significant changes in dimensions and physical properties. Under a large heat flux application (i.e. fuel cladding), the non-uniform changes in the dimensions and physical properties will lead to build-up of stresses in the structure over the course of time. To ensure reliable and safe operation of such a structure it is important to assess its thermo-mechanical performance under in-reactor conditions of irradiation and elevated temperature. In this work, the foundation for 3D thermo-mechanical analysis of SiC/SiC cladding is put in place and a set of analyses with simplified boundary conditions has been performed. The analyses were carried out with two different codes that were benchmarked against one another and prior results in the literature. A constitutive model is constructed and solved numerically to predict the stress distribution and variation in the cladding under normal operating conditions. The dependence of dimensions and physical properties variation with irradiation and temperature has been incorporated. These robust models may now be modified to take into account the axial and circumferential variation in neutron and heat flux to fully account for 3D effects. The results from the simple analyses show the development of high tensile stresses especially in the circumferential and axial directions at the inner region of the cladding. Based on the results obtained, design guidelines are recommended. For lack of certainty in or tailor-ability for the physical and mechanical properties of SiC/SiC composite material a sensitivity analysis is conducted. The analysis results establish a precedence order of the properties based on the extent to which these properties influence the temperature and the stresses.

  14. Palladium transport in SiC

    International Nuclear Information System (INIS)

    Olivier, E.J.; Neethling, J.H.

    2012-01-01

    Highlights: ► We investigate the reaction of Pd with SiC at typical HTGR operating temperatures. ► The high temperature mobility of palladium silicides within polycrystalline SiC was studied. ► Corrosion of SiC by Pd was seen in all cases. ► The preferential corrosion and penetration of Pd along grain boundaries in SiC was found. ► The penetration and transport of palladium silicides in SiC along grain boundaries was found. - Abstract: This paper reports on a transmission electron microscopy (TEM) and scanning electron microscopy (SEM) study of Pd corroded SiC. The reaction of Pd with different types of SiC at typical HTGR operating temperatures was examined. In addition the high temperature mobility of palladium silicides within polycrystalline SiC was investigated. The results indicated corrosion of the SiC by Pd in all cases studied. The corrosion leads to the formation of palladium silicides within the SiC, with the predominant phase found being Pd 2 Si. Evidence for the preferential corrosion and penetration of Pd along grain boundaries in polycrystalline SiC was found. The penetration and transport, without significant corrosion, of palladium silicides into polycrystalline SiC along grain boundaries was also observed. Implications of the findings with reference to the use of Tri Isotropic particles in HTGRs will be discussed.

  15. Palladium transport in SiC

    Energy Technology Data Exchange (ETDEWEB)

    Olivier, E.J., E-mail: jolivier@nmmu.ac.za [Centre for High Resolution Transmission Electron Microscopy, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Neethling, J.H. [Centre for High Resolution Transmission Electron Microscopy, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer We investigate the reaction of Pd with SiC at typical HTGR operating temperatures. Black-Right-Pointing-Pointer The high temperature mobility of palladium silicides within polycrystalline SiC was studied. Black-Right-Pointing-Pointer Corrosion of SiC by Pd was seen in all cases. Black-Right-Pointing-Pointer The preferential corrosion and penetration of Pd along grain boundaries in SiC was found. Black-Right-Pointing-Pointer The penetration and transport of palladium silicides in SiC along grain boundaries was found. - Abstract: This paper reports on a transmission electron microscopy (TEM) and scanning electron microscopy (SEM) study of Pd corroded SiC. The reaction of Pd with different types of SiC at typical HTGR operating temperatures was examined. In addition the high temperature mobility of palladium silicides within polycrystalline SiC was investigated. The results indicated corrosion of the SiC by Pd in all cases studied. The corrosion leads to the formation of palladium silicides within the SiC, with the predominant phase found being Pd{sub 2}Si. Evidence for the preferential corrosion and penetration of Pd along grain boundaries in polycrystalline SiC was found. The penetration and transport, without significant corrosion, of palladium silicides into polycrystalline SiC along grain boundaries was also observed. Implications of the findings with reference to the use of Tri Isotropic particles in HTGRs will be discussed.

  16. Photoluminescence analysis of Ce3+:Zn2SiO4 & Li++ Ce3+:Zn2SiO4: phosphors by a sol-gel method

    Science.gov (United States)

    Babu, B. Chandra; Vandana, C. Sai; Guravamma, J.; Rudramadevi, B. Hemalatha; Buddhudu, S.

    2015-06-01

    Here, we report on the development and photoluminescence analysis of Zn2SiO4, Ce3+:Zn2SiO4 & Li+ + Ce3+: Zn2SiO4 novel powder phosphors prepared by a sol-gel technique. The total amount of Ce3+ ions was kept constant in this experiment at 0.05 mol% total doping. The excitation and emission spectra of undoped (Zn2SiO4) and Ce3+ doped Zn2SiO4 and 0.05 mol% Li+ co-doped samples have been investigated. Cerium doped Zn2SiO4 powder phosphors had broad blue emission corresponding to the 2D3/2→2FJ transition at 443nm. Stable green-yellow-red emission has been observed from Zn2SiO4 host matrix and also we have been observed the enhanced luminescence of Li+ co-doped Zn2SiO4:Ce3+. Excitation and emission spectra of these blue luminescent phosphors have been analyzed in evaluating their potential as luminescent screen coating phosphors.

  17. Advanced Optoelectronic Devices based on Si Quantum Dots/Si Nanowires Hetero-structures

    International Nuclear Information System (INIS)

    Xu, J; Zhai, Y Y; Cao, Y Q; Chen, K J

    2017-01-01

    Si quantum dots are currently extensively studied since they can be used to develop many kinds of optoelectronic devices. In this report, we review the fabrication of Si quantum dots (Si QD) /Si nanowires (Si NWs) hetero-structures by deposition of Si QDs/SiO 2 or Si QDs/SiC multilayers on Si NWs arrays. The electroluminescence and photovoltaic devices based on the formed hetero-structures have been prepared and the improved performance is confirmed. It is also found that the surface recombination via the surface defects states on the Si NWs, especially the ones obtained by the long-time etching, may deteriorate the device properties though they exhibit the better anti-reflection characteristics. The possible surface passivation approaches are briefly discussed. (paper)

  18. On formation of silicon nanocrystals under annealing SiO2 layers implanted with Si ions

    International Nuclear Information System (INIS)

    Kachurin, G.A.; Yanovskaya, S.G.; Volodin, V.A.; Kesler, V.G.; Lejer, A.F.; Ruault, M.-O.

    2002-01-01

    Raman scattering, X-ray photoelectron spectroscopy, and photoluminescence have been used to study the formation of silicon nanocrystals in SiO 2 implanted with Si ions. Si clusters have been formed at once in the postimplanted layers, providing the excessive Si concentration more ∼ 3 at. %. Si segregation with Si-Si 4 bonds formation is enhanced as following annealing temperature increase, however, the Raman scattering by Si clusters diminishes. The effect is explained by a transformation of the chain-like Si clusters into compact phase nondimensional structures. Segregation of Si nanoprecipitates had ended about 1000 deg C, but the strong photoluminescence typical for Si nanocrystals manifested itself only after 1100 deg C [ru

  19. Evaluation of an aSi-EPID with flattening filter free beams: Applicability to the GLAaS algorithm for portal dosimetry and first experience for pretreatment QA of RapidArc

    International Nuclear Information System (INIS)

    Nicolini, G.; Clivio, A.; Vanetti, E.; Cozzi, L.; Fogliata, A.; Krauss, H.; Fenoglietto, P.

    2013-01-01

    Purpose: To demonstrate the feasibility of portal dosimetry with an amorphous silicon mega voltage imager for flattening filter free (FFF) photon beams by means of the GLAaS methodology and to validate it for pretreatment quality assurance of volumetric modulated arc therapy (RapidArc).Methods: The GLAaS algorithm, developed for flattened beams, was applied to FFF beams of nominal energy of 6 and 10 MV generated by a Varian TrueBeam (TB). The amorphous silicon electronic portal imager [named mega voltage imager (MVI) on TB] was used to generate integrated images that were converted into matrices of absorbed dose to water. To enable GLAaS use under the increased dose-per-pulse and dose-rate conditions of the FFF beams, new operational source-detector-distance (SDD) was identified to solve detector saturation issues. Empirical corrections were defined to account for the shape of the profiles of the FFF beams to expand the original methodology of beam profile and arm backscattering correction. GLAaS for FFF beams was validated on pretreatment verification of RapidArc plans for three different TB linacs. In addition, the first pretreatment results from clinical experience on 74 arcs were reported in terms of γ analysis.Results: MVI saturates at 100 cm SDD for FFF beams but this can be avoided if images are acquired at 150 cm for all nominal dose rates of FFF beams. Rotational stability of the gantry-imager system was tested and resulted in a minimal apparent imager displacement during rotation of 0.2 ± 0.2 mm at SDD = 150 cm. The accuracy of this approach was tested with three different Varian TrueBeam linacs from different institutes. Data were stratified per energy and machine and showed no dependence with beam quality and MLC model. The results from clinical pretreatment quality assurance, provided a gamma agreement index (GAI) in the field area for six and ten FFF beams of (99.8 ± 0.3)% and (99.5 ± 0.6)% with distance to agreement and dose difference criteria

  20. Nanocatalytic growth of Si nanowires from Ni silicate coated SiC nanoparticles on Si solar cell.

    Science.gov (United States)

    Parida, Bhaskar; Choi, Jaeho; Ji, Hyung Yong; Park, Seungil; Lim, Gyoungho; Kim, Keunjoo

    2013-09-01

    We investigated the nanocatalytic growth of Si nanowires on the microtextured surface of crystalline Si solar cell. 3C-SiC nanoparticles have been used as the base for formation of Ni silicate layer in a catalytic reaction with the Si melt under H2 atmosphere at an annealing temperature of 1100 degrees C. The 10-nm thick Ni film was deposited after the SiC nanoparticles were coated on the microtextured surface of the Si solar cell by electron-beam evaporation. SiC nanoparticles form a eutectic alloy surface of Ni silicate and provide the base for Si supersaturation as well as the Ni-Si alloy layer on Si substrate surface. This bottom reaction mode for the solid-liquid-solid growth mechanism using a SiC nanoparticle base provides more stable growth of nanowires than the top reaction mode growth mechanism in the absence of SiC nanoparticles. Thermally excited Ni nanoparticle forms the eutectic alloy and provides collectively excited electrons at the alloy surface, which reduces the activation energy of the nanocatalytic reaction for formation of nanowires.

  1. Research on a Micro-Nano Si/SiGe/Si Double Heterojunction Electro-Optic Modulation Structure

    Directory of Open Access Journals (Sweden)

    Song Feng

    2018-01-01

    Full Text Available The electro-optic modulator is a very important device in silicon photonics, which is responsible for the conversion of optical signals and electrical signals. For the electro-optic modulator, the carrier density of waveguide region is one of the key parameters. The traditional method of increasing carrier density is to increase the external modulation voltage, but this way will increase the modulation loss and also is not conducive to photonics integration. This paper presents a micro-nano Si/SiGe/Si double heterojunction electro-optic modulation structure. Based on the band theory of single heterojunction, the barrier heights are quantitatively calculated, and the carrier concentrations of heterojunction barrier are analyzed. The band and carrier injection characteristics of the double heterostructure structure are simulated, respectively, and the correctness of the theoretical analysis is demonstrated. The micro-nano Si/SiGe/Si double heterojunction electro-optic modulation is designed and tested, and comparison of testing results between the micro-nano Si/SiGe/Si double heterojunction micro-ring electro-optic modulation and the micro-nano Silicon-On-Insulator (SOI micro-ring electro-optic modulation, Free Spectrum Range, 3 dB Bandwidth, Q value, extinction ratio, and other parameters of the micro-nano Si/SiGe/Si double heterojunction micro-ring electro-optic modulation are better than others, and the modulation voltage and the modulation loss are lower.

  2. Effect of Ti and Si interlayer materials on the joining of SiC ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Yang Il; Park, Jung Hwan; Kim, Hyun Gil; Park, Dong Jun; Park, Jeong Yong; Kim, Weon Ju [LWR Fuel Technology Division, Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2016-08-15

    SiC-based ceramic composites are currently being considered for use in fuel cladding tubes in light-water reactors. The joining of SiC ceramics in a hermetic seal is required for the development of ceramic-based fuel cladding tubes. In this study, SiC monoliths were diffusion bonded using a Ti foil interlayer and additional Si powder. In the joining process, a very low uniaxial pressure of ∼0.1 MPa was applied, so the process is applicable for joining thin-walled long tubes. The joining strength depended strongly on the type of SiC material. Reaction-bonded SiC (RB-SiC) showed a higher joining strength than sintered SiC because the diffusion reaction of Si was promoted in the former. The joining strength of sintered SiC was increased by the addition of Si at the Ti interlayer to play the role of the free Si in RB-SiC. The maximum joint strength obtained under torsional stress was ∼100 MPa. The joint interface consisted of TiSi{sub 2}, Ti{sub 3}SiC{sub 2}, and SiC phases formed by a diffusion reaction of Ti and Si.

  3. Discharge initiation experiments in the Tokapole II tokamak

    International Nuclear Information System (INIS)

    Shepard, D.A.

    1984-01-01

    Experiments in the Tokapole II tokamak demonstrate the benefits of high density (n/sub e//n/sub o/ greater than or equal to 0.01) preionization by reducing four quantities at startup: necessary toroidal loop voltage (V 1 ) (50%), volt-second consumption (40-50%), impurity radiation (25-50%), and runaway electron production (approx. 80-100%). A zero-dimensional code models the loop voltage reduction dependence on preionization density and predicts a similar result for reactor scale devices. The code shows low initial resistivity and a high resistivity time derivative contribute to loop voltage reduction. Microwaves at the electron cyclotron resonance (ECR) frequency and plasma gun injection produce high density preionization, which reduces the initial V 1 , volt-second consumption, and runaways. The ECR preionization also reduces impurity radiation by shortening the time from voltage application to current channel formation. This, evidently, reduces the total plasma-wall interaction at startup. The power balance of the ECR plasma in a toroidal-field-only case was studied using Langmuir probes and impurity doping. The vertical electric field and current, which result from curvature drift, were measured as approx. 10 V/cm and 50 amps, respectively, and exceeded expected values for the bulk electron temperature (approx. 10 eV)

  4. Fabrication of SiC nanopillars by inductively coupled SF6/O2 plasma etching

    International Nuclear Information System (INIS)

    Choi, J H; Bano, E; Latu-Romain, L; Dhalluin, F; Chevolleau, T; Baron, T

    2012-01-01

    In this paper, we demonstrate a top-down fabrication technique for nanometre scale silicon carbide (SiC) pillars using inductively coupled plasma etching. A set of experiments in SF 6 -based plasma was carried out in order to realize high aspect ratio SiC nanopillars. The etched SiC nanopillars using a small circular mask pattern (115 nm diameter) show high aspect ratio (7.4) with a height of 2.2 µm at an optimum bias voltage (300 V) and pressure (6 mTorr). Under the optimal etching conditions using a large circular mask pattern with 370 nm diameter, the obtained SiC nanopillars exhibit high anisotropy features (6.4) with a large etch depth (>7 µm). The etch characteristic of the SiC nanopillars under these conditions shows a high etch rate (550 nm min -1 ) and a high selectivity (over 60 for Ni). We also studied the etch profile of the SiC nanopillars and mask evolution over the etching time. As the mask pattern size shrinks in nanoscale, vertical and lateral mask erosion plays a crucial role in the etch profile of the SiC nanopillars. Long etching process makes the pillars appear with a hexagonal shape, coming from the crystallographic structure of α-SiC. It is found that the feature of pillars depends not only on the etching process parameters, but also on the crystallographic structure of the SiC phase. (paper)

  5. Amorphous SiOx nanowires catalyzed by metallic Ge for optoelectronic applications

    International Nuclear Information System (INIS)

    Nie Tianxiao; Chen Zhigang; Wu Yueqin; Lin Jianhui; Zhang Jiuzhan; Fan Yongliang; Yang Xinju; Jiang Zuimin; Zou Jin

    2011-01-01

    Research highlights: → Metallic Ge has been demonstrated as an effective catalyst for the growth of SiO x nanowires on Si substrates. → Such a catalyst may avoid catalyst contamination caused by their unconsciousness left in the nanowires. → Two broad peaks centered at 410 nm and 570 nm were observed in photoluminescence spectrum, indicating that such SiO x nanowires have the potential applications in white light-emitting diodes, full-colour display, full-colour indicator and light sources. - Abstract: Amorphous SiO x nanowires, with diameters of ∼20 nm and lengths of tens of μm, were grown from self-organized GeSi quantum dots or GeSi alloy epilayers on Si substrates. The morphologies and yield of these amorphous nanowires depend strongly upon the synthesis temperature. Comparative experiments indicate that the present SiO x nanowires are induced by metallic Ge as catalysts via the solid liquid solid growth mechanism. Two broad peaks centered at 410 nm and 570 nm were observed in photoluminescence spectrum, indicating that such SiO x nanowires have the potential applications in white light-emitting diodes, full-colour display, full-colour indicator and light sources.

  6. Characterization of a SiC MIS Schottky diode as RBS particle detector

    Science.gov (United States)

    Kaufmann, I. R.; Pick, A. C.; Pereira, M. B.; Boudinov, H. I.

    2018-02-01

    A 4H-SiC Schottky diode was investigated as a particle detector for Rutherford Backscattering Spectroscopy (RBS) experiment. The device was fabricated on a commercial 4H-SiC epitaxial n-type layer grown onto a 4H-SiC n+ type substrate wafer doped with nitrogen. Hafnium oxide with thickness of 1 nm was deposited by Atomic Layer Deposition and 10 nm of Ni were deposited by sputtering to form the Ni/HfO2/4H-SiC MIS Schottky structure. Current-Voltage curves with variable temperature were measured to extract the real Schottky Barrier Height (0.32 V) and ideality factor values (1.15). Reverse current and Capacitance-Voltage measurements were performed on the 4H-SiC detector and compared to a commercial Si barrier detector acquired from ORTEC. RBS data for four alpha energies (1, 1.5, 2 and 2.5 MeV) were collected from an Au/Si sample using the fabricated SiC and the commercial Si detectors simultaneously. The energy resolution for the fabricated detector was estimated to be between 75 and 80 keV.

  7. Enhanced 29Si spin-lattice relaxation and observation of three-dimensional lattice connectivity in zeolites by two-dimensional 29Si MASS NMR

    International Nuclear Information System (INIS)

    Sivadinarayana, C.; Choudhary, V.R.; Ganapathy, S.

    1994-01-01

    It is shown that considerable sensitivity enhancement is achieved in the 29 Si magic angle sample spinning (MASS) NMR spectra of highly siliceous zeolites by pre treating the material with oxygen. The presence of adsorbed molecular oxygen in zeolite channels promotes an efficient 29 Si spin-lattice relaxation via a paramagnetic interaction between the lattice 29 Si T-site and the adsorbed oxygen on zeolite channels. This affords an efficient 2-D data collection and leads to increased sensitivity. The utility of this method is demonstrated in a two-dimensional COSY-45 NMR experiment of a high silica zeolite ZSM-5. (author). 20 refs., 3 figs., 1 tab

  8. Entrance channel excitations in the 28Si + 28Si reaction

    International Nuclear Information System (INIS)

    Decowski, P.; Gierlik, E.; Box, P.F.; Kamermans, R.; Nieuwenhuizen, G.J. van; Meijer, R.J.; Griffioen, K.A.; Wilschut, H.W.; Giorni, A.; Morand, C.; Demeyer, A.; Guinet, D.

    1991-01-01

    Velocity spectra of heavy ions produced in the 28 Si + 28 Si reaction at bombarding energies of 19.7 and 30 MeV/nucleon were measured and interpreted within the Q-optimum model extended by the inclusion of particle evaporation from excited fragments. Regions of forward angle spectra corresponding to the mutual excitation of the reaction partners with net mass transfer zero projected onto the Q-value variable show an enhancement at Q-values of -60 - -80 MeV (excitation energies of the reaction partners equal to 30 - 40 MeV). This energy range coincides with the region of 2ℎω - 3ℎω excitations characteristic for giant osciallations. This selective excitation, which occurs at a very early stage of the reaction (the cross section is the largest at very forward angles), provides an important doorway to other dissipative processes

  9. Phase selection and microstructure in directional solidification of glass forming Pd-Si-Cu alloys

    Science.gov (United States)

    Huo, Yang

    Phase selection and microstructure formation during the rapid solidification of alloy melts has been a topic of substantial interest over the last several decades, attributed mainly to the access to novel structures involving metastable crystalline and non-crystalline phases. In this work, Bridgeman type directional solidification was conducted in Pd-Si-Cu glass forming system to study such cooling rate dependent phase transition and microstructure formation. The equilibrium state for Pd-Si-Cu ternary system was investigated through three different works. First of all, phase stabilities for Pd-Si binary system was accessed with respects of first-principles and experiments, showing Pd5Si, Pd9Si2, Pd3Si and Pd 2Si phase are stable all way to zero Kevin while PdSi phase is a high temperature stable phase, and Pd2Si phase with Fe2P is a non-stoichiometry phase. A thermodynamic database was developed for Pd-Si system. Second, crystal structures for compounds with ternary compositions were studied by XRD, SEM and TEM, showing ordered and disordered B2/bcc phases are stable in Pd-rich part. At last, based on many phase equilibria and phase transitions data, a comprehensive thermodynamic discrption for Pd-Si-Cu ternary system was first time to be developed, from which different phase diagrams and driving force for kinetics can be calculated. Phase selection and microstructure formation in directional solidification of the best glass forming composition, Pd 77.5Si16.5Cu6, in this system with growth velocities from 0.005 to 7.5mm/s was systematically studied and the solidification pathways at different conditions were interpreted from thermodynamic simulation. The results show that for growth velocities are smaller than 0.1mm/s Pd 3Si phase is primary phase and Pd9Si2 phase is secondary phase, the difficulty for Pd9Si2 phase nucleation gives rise to the formation of two different eutectic structure. For growth velocities between 0.4 and 1mm/s, instead of Pd3Si phase, Pd9Si2

  10. Brazing of AlN to SiC by a Pr silicide: Physicochemical aspects

    Energy Technology Data Exchange (ETDEWEB)

    Koltsov, A. [SIMAP - UMR CNRS 5266, INP Grenoble-UJF, Domaine Universitaire, BP 75, 1130 rue de la Piscine, 38402 Saint Martin d' Heres, Cedex (France)], E-mail: alexey.koltsov@arcelor.com; Hodaj, F.; Eustathopoulos, N. [SIMAP - UMR CNRS 5266, INP Grenoble-UJF, Domaine Universitaire, BP 75, 1130 rue de la Piscine, 38402 Saint Martin d' Heres, Cedex (France)

    2008-11-15

    In view of their very different thermomechanical properties, joining of metals to ceramics by brazing is usually performed by means of one or more interlayers. In a recent investigation AlN was chosen as interlayer material for brazing SiC to a superalloy. The aim of the present study is to determine an alloy with a high melting point (close to 1200 deg. C) enabling brazing of AlN to SiC. Two types of experiments are performed with a Si-17 at.% Pr eutectic alloy (T{sub m} = 1212 deg. C): sessile drop experiments to determine wetting and brazing of AlN and SiC plates to determine gap filling. Experiments are carried out in high vacuum to promote deoxidation. Interfacial reactivity, joint microstructure and type of failure occurring during cooling are examined by optical and scanning electron microscopy.

  11. Brazing of AlN to SiC by a Pr silicide: Physicochemical aspects

    International Nuclear Information System (INIS)

    Koltsov, A.; Hodaj, F.; Eustathopoulos, N.

    2008-01-01

    In view of their very different thermomechanical properties, joining of metals to ceramics by brazing is usually performed by means of one or more interlayers. In a recent investigation AlN was chosen as interlayer material for brazing SiC to a superalloy. The aim of the present study is to determine an alloy with a high melting point (close to 1200 deg. C) enabling brazing of AlN to SiC. Two types of experiments are performed with a Si-17 at.% Pr eutectic alloy (T m = 1212 deg. C): sessile drop experiments to determine wetting and brazing of AlN and SiC plates to determine gap filling. Experiments are carried out in high vacuum to promote deoxidation. Interfacial reactivity, joint microstructure and type of failure occurring during cooling are examined by optical and scanning electron microscopy

  12. The development of SiC whisker fabrication technology for nuclear applications

    International Nuclear Information System (INIS)

    Kang, Thae Khapp; Kuk, Il Hiun; Kim, Chang Kyu; Lee, Jae Chun; Lee, Ho Jin; Park, Soon Dong; Im, Gyeong Soo

    1991-02-01

    Some important experiments for whisker growth reactions, fabrication processes, and experiments for fabricarion of whisker reinforced composites have been performed. In order to investigate growth reaction of SiC whiskers, a conventional carbothermic reaction was tested. Based on the results of carbothermic process, a new process called silicothermic reaction was planned and some basic experiments were performed. Reaction characteristics of silicon monoxide, core material for SiC whisker growth in both of the reactions were investigated for basic data. Additionally, a hydrofluoric acid leaching process was tested for developing SiC whisker recovery process, and powder metallurgy process and melt sqeeze process were tried to develop aluminum-SiC whisker composites. (Author)

  13. Microwave joining of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Silberglitt, R.; Ahmad, I. [FM Technologies, Inc., Fairfax, VA (United States); Black, W.M. [George Mason Univ., Fairfax, VA (United States)] [and others

    1995-05-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on optimization of time-temperature profiles, production of SiC from chemical precursors, and design of new applicators for joining of long tubes.

  14. Oxide Structure Dependence of SiO2/SiOx/3C-SiC/n-Type Si Nonvolatile Resistive Memory on Memory Operation Characteristics

    Science.gov (United States)

    Yamaguchi, Yuichiro; Shouji, Masatsugu; Suda, Yoshiyuki

    2012-11-01

    We have investigated the dependence of the oxide layer structure of our previously proposed metal/SiO2/SiOx/3C-SiC/n-Si/metal metal-insulator-semiconductor (MIS) resistive memory device on the memory operation characteristics. The current-voltage (I-V) measurement and X-ray photoemission spectroscopy results suggest that SiOx defect states mainly caused by the oxidation of 3C-SiC at temperatures below 1000 °C are related to the hysteresis memory behavior in the I-V curve. By restricting the SiOx interface region, the number of switching cycles and the on/off current ratio are more enhanced. Compared with a memory device formed by one-step or two-step oxidation of 3C-SiC, a memory device formed by one-step oxidation of Si/3C-SiC exhibits a more restrictive SiOx interface with a more definitive SiO2 layer and higher memory performances for both the endurance switching cycle and on/off current ratio.

  15. Laser-controlled stress of Si nanocrystals in a free-standing Si /SiO2 superlattice

    Science.gov (United States)

    Khriachtchev, Leonid; Räsänen, Markku; Novikov, Sergei

    2006-01-01

    We report laser manipulations with stress at the nanoscale level. The continuous-wave Ar+ laser radiation melts Si nanocrystals in a free-standing Si /SiO2 superlattice. Silicon crystallization from the liquid phase leads to a compressive stress, which can be accurately tuned in the 3GPa range using laser annealing below the Si melting temperature and then recovered by laser annealing above the melting temperature. This allows investigations of various phenomena as a function of stress and makes a case of Si-nanocrystal memory with very long retention time, which can be written, erased, and read by optical means.

  16. Laser-controlled stress of Si nanocrystals in a free-standing Si/SiO2 superlattice

    International Nuclear Information System (INIS)

    Khriachtchev, Leonid; Raesaenen, Markku; Novikov, Sergei

    2006-01-01

    We report laser manipulations with stress at the nanoscale level. The continuous-wave Ar + laser radiation melts Si nanocrystals in a free-standing Si/SiO 2 superlattice. Silicon crystallization from the liquid phase leads to a compressive stress, which can be accurately tuned in the 3 GPa range using laser annealing below the Si melting temperature and then recovered by laser annealing above the melting temperature. This allows investigations of various phenomena as a function of stress and makes a case of Si-nanocrystal memory with very long retention time, which can be written, erased, and read by optical means

  17. Gas leak tightness of SiC/SiC composites at elevated temperature

    Energy Technology Data Exchange (ETDEWEB)

    Hayasaka, Daisuke, E-mail: hayasaka@oasis.muroran-it.ac.jp [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Graduate School of Engineering, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Park, Joon-Soo. [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Kishimoto, Hirotatsu [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Graduate School of Engineering, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Kohyama, Akira [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan)

    2016-11-01

    Highlights: • NITE-SiC/SiC has extremely densified microstructure compared with other SiC/SiC composite like CVI. • Excellent helium and hydrogen gas-leak tightness of SiC/SiC composites by DEMO-NITE method from prototype industrialization production line was presented. • The excellence against stainless steel and Zircaloy at elevated temperature, together with generic excellent properties of SiC will be inevitable for innovative blanket and divertors for DEMO- and power- fusion reactors. - Abstract: SiC/SiC composite materials are attractive candidates for high heat flux components and blanket of fusion reactor, mainly due to their high temperature properties, radiation damage tolerance and low induced radioactivity. One of the challenges for SiC/SiC application in fusion reactors is to satisfy sufficient gas leak tightness of hydrogen and helium isotopes. Although many efforts have been carried-out, SiC/SiC composites by conventional processes have not been successful to satisfy the requirements, except SiC/SiC composites by NITE-methods. Toward the early realization of SiC/SiC components into fusion reactor systems process development of NITE-process has been continued. Followed to the brief introduction of recently developed DEMO-NITE process, baseline properties and hydrogen and helium gas leak tightness is presented. SiC/SiC claddings with 10 mm in diameter and 1 mm in wall thickness are tested by gas leak tightness system developed. The leak tightness measurements are done room temperature to 400 °C. Excellent gas leak tightness equivalent or superior to Zircaloy claddings for light water fission reactors is confirmed. The excellent gas leak tightness suggests nearly perfect suppression of large gas leak path in DEMO-NITE SiC/SiC.

  18. 3C-SiC nanocrystal growth on 10° miscut Si(001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Deokar, Geetanjali, E-mail: gitudeo@gmail.com [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); D' Angelo, Marie; Demaille, Dominique [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Cavellin, Catherine Deville [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Faculté des Sciences et Technologie UPEC, 61 av. De Gaulle, Créteil F-94010 (France)

    2014-04-01

    The growth of 3C-SiC nano-crystal (NC) on 10° miscut Si(001) substrate by CO{sub 2} thermal treatment is investigated by scanning and high resolution transmission electron microscopies. The vicinal Si(001) surface was thermally oxidized prior to the annealing at 1100 °C under CO{sub 2} atmosphere. The influence of the atomic steps at the vicinal SiO{sub 2}/Si interface on the SiC NC growth is studied by comparison with the results obtained for fundamental Si(001) substrates in the same conditions. For Si miscut substrate, a substantial enhancement in the density of the SiC NCs and a tendency of preferential alignment of them along the atomic step edges is observed. The SiC/Si interface is abrupt, without any steps and epitaxial growth with full relaxation of 3C-SiC occurs by domain matching epitaxy. The CO{sub 2} pressure and annealing time effect on NC growth is analyzed. The as-prepared SiC NCs can be engineered further for potential application in optoelectronic devices and/or as a seed for homoepitaxial SiC or heteroepitaxial GaN film growth. - Highlights: • Synthesis of 3C-SiC nanocrystals epitaxied on miscut-Si using a simple technique • Evidence of domain matching epitaxy at the SiC/Si interface • SiC growth proceeds along the (001) plane of host Si. • Substantial enhancement of the SiC nanocrystal density due to the miscut • Effect of the process parameters (CO{sub 2} pressure and annealing duration)

  19. Neutral particle time-of-flight analyzer for the Tandem Mirror Experiment Upgrade (TMX-U)

    International Nuclear Information System (INIS)

    Hibbs, S.M.; Carter, M.R.; Coutts, G.W.

    1985-01-01

    We describe the design and performance of a time-of-flight (ToF) analyzer being built for installation on the east end cell of the Tandem Mirror Experiment Upgrade (TMX-U). Its primary purpose is to measure the velocity distribution of escaping charge exchange neutral particles having energies between 20 and 5000 electron volts (eV). It also enables direct determination of the thermal barrier potential when used in conjunction with the plasma potential diagnostic and the end loss ion spectrometer. In addition, it can measure the velocity distribution of passing ions leaving the central cell and of ions trapped in the thermal barrier

  20. Irradiation project of SiC/SiC fuel pin 'INSPIRE': Status and future plan

    International Nuclear Information System (INIS)

    Kohyama, Akira; Kishimoto, Hirotatsu

    2015-01-01

    After the March 11 Disaster in East-Japan, Research and Development towards Ensuring Nuclear Safety Enhancement for LWR becomes a top priority R and D in nuclear energy policy of Japan. The role of high temperature non-metallic materials, such as SiC/SiC, is becoming important for the advanced nuclear reactor systems. SiC fibre reinforced SiC composite has been recognised to be the most attractive option for the future, now, METI fund based project, INSPIRE, has been launched as 5-year termed project at OASIS in Muroran Institute of Technology aiming at early realisation of this system. INSPIRE is the irradiation project of SiC/SiC fuel pins aiming to accumulate material, thermal, irradiation effect data of NITE-SiC/SiC in BWR environment. Nuclear fuel inserted SiC/SiC fuel pins are planned to be installed in the Halden reactor. The project includes preparing the NITE-SiC/SiC tubes, joining of end caps, preparation of rigs to control the irradiation environment to BWR condition and the instruments to measure the condition of rigs and pins in operation. Also, basic neutron irradiation data will be accumulated by SiC/SiC coupon samples currently under irradiation in BR2. The output from this project may present the potentiality of NITE-SiC/SiC fuel cladding with the first stage fuel-cladding interaction. (authors)

  1. High resolution investigation of the 30Si(þ, þ)30Si reaction

    NARCIS (Netherlands)

    Walinga, J.; Rinsvelt, H.A. van; Endt, P.M.

    The differential cross section for elastic scattering of protons on 30Si was measured with surface barrier counters at four angles. Thirty-six 30Si(þ, γ)31P resonances are known in the Ep=1–2MeV region. Fifteen of these were also observed in the 30Si(þ, þ)30Si reaction, with natural widths varying

  2. Tunable graphene doping by modulating the nanopore geometry on a SiO2/Si substrate

    KAUST Repository

    Lim, Namsoo; Yoo, Tae Jin; Kim, Jin Tae; Pak, Yusin; Kumaresan, Yogeenth; Kim, Hyeonghun; Kim, Woochul; Lee, Byoung Hun; Jung, Gun Young

    2018-01-01

    A tunable graphene doping method utilizing a SiO2/Si substrate with nanopores (NP) was introduced. Laser interference lithography (LIL) using a He–Cd laser (λ = 325 nm) was used to prepare pore size- and pitch-controllable NP SiO2/Si substrates

  3. Laser cladding of Al-Si/SiC composite coatings : Microstructure and abrasive wear behavior

    NARCIS (Netherlands)

    Anandkumar, R.; Almeida, A.; Vilar, R.; Ocelik, V.; De Hosson, J.Th.M.

    2007-01-01

    Surface coatings of an Al-Si-SiC composite were produced on UNS A03560 cast Al-alloy substrates by laser cladding using a mixture of powders of Al-12 wt.% Si alloy and SiC. The microstructure of the coatings depends considerably on the processing parameters. For a specific energy of 26 MJ/m2 the

  4. Formation of AlFeSi phase in AlSi12 alloy with Ce addition

    Directory of Open Access Journals (Sweden)

    S. Kores

    2012-04-01

    Full Text Available The influence of cerium addition on the solidification sequence and microstructure constituents of the Al-Si alloys with 12,6 mass % Si was examined. The solidification was analyzed by a simple thermal analysis. The microstructures were examined with conventional light and scanning electron microscopy. Ternary AlSiCe phase was formed in the Al-Si alloys with added cerium during the solidification process. AlSiCe and β-AlFeSi phases solidified together in the region that solidified the last. Cerium addition influenced on the morphology of the α-AlFeSi phase solidification.

  5. Advanced SiC/SiC Ceramic Composites For Gas-Turbine Engine Components

    Science.gov (United States)

    Yun, H. M.; DiCarlo, J. A.; Easler, T. E.

    2004-01-01

    NASA Glenn Research Center (GRC) is developing a variety of advanced SiC/SiC ceramic composite (ASC) systems that allow these materials to operate for hundreds of hours under stress in air at temperatures approaching 2700 F. These SiC/SiC composite systems are lightweight (approximately 30% metal density) and, in comparison to monolithic ceramics and carbon fiber-reinforced ceramic composites, are able to reliably retain their structural properties for long times under aggressive gas-turbine engine environments. The key for the ASC systems is related first to the NASA development of the Sylramic-iBN Sic fiber, which displays higher thermal stability than any other SiC- based ceramic fibers and possesses an in-situ grown BN surface layer for higher environmental durability. This fiber is simply derived from Sylramic Sic fiber type that is currently produced at ATK COI Ceramics (COIC). Further capability is then derived by using chemical vapor infiltration (CVI) and/or polymer infiltration and pyrolysis (PIP) to form a Sic-based matrix with high creep and rupture resistance as well as high thermal conductivity. The objectives of this study were (1) to optimize the constituents and processing parameters for a Sylramic-iBN fiber reinforced ceramic composite system in which the Sic-based matrix is formed at COIC almost entirely by PIP (full PIP approach), (2) to evaluate the properties of this system in comparison to other 2700 F Sylramic-iBN systems in which the matrix is formed by full CVI and CVI + PIP, and (3) to examine the pros and cons of the full PIP approach for fabricating hot-section engine components. A key goal is the development of a composite system with low porosity, thereby providing high modulus, high matrix cracking strength, high interlaminar strength, and high thermal conductivity, a major property requirement for engine components that will experience high thermal gradients during service. Other key composite property goals are demonstration at

  6. Formation of thin DLC films on SiO{sub 2}/Si substrate using FCVAD technique

    Energy Technology Data Exchange (ETDEWEB)

    Bootkul, D. [Department of General Science, Faculty of Science, Srinakharinwirot University, Bangkok 10110 (Thailand); Thailand Centre of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Intarasiri, S., E-mail: saweat@gmail.com [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Centre of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Aramwit, C.; Tippawan, U. [Plasma and Beam Physics Research Facility (PBP), Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D. [Plasma and Beam Physics Research Facility (PBP), Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Centre of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2013-07-15

    Diamond-like carbon (DLC) films deposited on SiO{sub 2}/Si substrate are attractive for novel sensitive and selective chemical sensors. According to the almost never ending of size reduction, a nm-thickness layer of the film is greatly required. However, formation of such a very thin DLC film on SiO{sub 2}/Si substrate is challenging. In this experiment, DLC films were formed using our in-house Filtered Cathodic Vacuum Arc Deposition (FCVAD) facility by varying the bias voltage of 0 V, −250 V and −450 V with the arc voltage of 350 V, 450 V, 550 V, 650 V and 750 V for 10 min. Raman spectroscopy was applied for characterization of the film qualities and Transmission Electron Microscopy (TEM) was applied for cross sectional analysis. Results showed that films of thickness ranging from 10–50 nm were easily acquired depending on deposition conditions. Deconvolution of Raman spectra of these samples revealed that, when fixing the substrate bias but increasing the arc voltage from 350 to 750 V, the ratio between D-peak and G-peak intensity, namely I{sub D}/I{sub G} ratio, tended to reduce up to the arc voltage of 450 V, then increased up to the arc voltage of 650 V and finally decreased again. On the other hand, when fixing the arc voltage, the I{sub D}/I{sub G} ratio tended to decrease continuously as the increasing of bias voltage. It can be concluded that the bonding structure would evolve from a graphitic-like structure to a diamond-like structure as the substrate bias increases. Additionally, the sp{sup 3} site should be maximized at the arc voltage ∼450 V for fixed bias voltage. It is expected that, at −450 V bias and 450 V arc, sp{sup 3} fractions could be higher than 60%. However, in some cases, e.g. at low arc voltages, voids formed between the film and the amorphous SiO{sub 2} substrate. Electron energy loss spectroscopy (EELS) of the C edge across the DLC indicated that the thicker DLC film had uniform chemistry and structure, whereas the thin DLC

  7. Formation of thin DLC films on SiO2/Si substrate using FCVAD technique

    International Nuclear Information System (INIS)

    Bootkul, D.; Intarasiri, S.; Aramwit, C.; Tippawan, U.; Yu, L.D.

    2013-01-01

    Diamond-like carbon (DLC) films deposited on SiO 2 /Si substrate are attractive for novel sensitive and selective chemical sensors. According to the almost never ending of size reduction, a nm-thickness layer of the film is greatly required. However, formation of such a very thin DLC film on SiO 2 /Si substrate is challenging. In this experiment, DLC films were formed using our in-house Filtered Cathodic Vacuum Arc Deposition (FCVAD) facility by varying the bias voltage of 0 V, −250 V and −450 V with the arc voltage of 350 V, 450 V, 550 V, 650 V and 750 V for 10 min. Raman spectroscopy was applied for characterization of the film qualities and Transmission Electron Microscopy (TEM) was applied for cross sectional analysis. Results showed that films of thickness ranging from 10–50 nm were easily acquired depending on deposition conditions. Deconvolution of Raman spectra of these samples revealed that, when fixing the substrate bias but increasing the arc voltage from 350 to 750 V, the ratio between D-peak and G-peak intensity, namely I D /I G ratio, tended to reduce up to the arc voltage of 450 V, then increased up to the arc voltage of 650 V and finally decreased again. On the other hand, when fixing the arc voltage, the I D /I G ratio tended to decrease continuously as the increasing of bias voltage. It can be concluded that the bonding structure would evolve from a graphitic-like structure to a diamond-like structure as the substrate bias increases. Additionally, the sp 3 site should be maximized at the arc voltage ∼450 V for fixed bias voltage. It is expected that, at −450 V bias and 450 V arc, sp 3 fractions could be higher than 60%. However, in some cases, e.g. at low arc voltages, voids formed between the film and the amorphous SiO 2 substrate. Electron energy loss spectroscopy (EELS) of the C edge across the DLC indicated that the thicker DLC film had uniform chemistry and structure, whereas the thin DLC film showed changes in the edge shape

  8. Dual-Functionalized Graphene Oxide Based siRNA Delivery System for Implant Surface Biomodification with Enhanced Osteogenesis.

    Science.gov (United States)

    Zhang, Li; Zhou, Qing; Song, Wen; Wu, Kaimin; Zhang, Yumei; Zhao, Yimin

    2017-10-11

    Surface functionalization by small interfering RNA (siRNA) is a novel strategy for improved implant osseointegration. A gene delivery system with safety and high transfection activity is a crucial factor for an siRNA-functionalized implant to exert its biological function. To this end, polyethylene glycol (PEG) and polyethylenimine (PEI) dual-functionalized graphene oxide (GO; nGO-PEG-PEI) may present a promising siRNA vector. In this study, nanosized nGO-PEG-PEI was prepared and optimized for siRNA delivery. Titania nanotubes (NTs) fabricated by anodic oxidation were biomodified with nGO-PEG-PEI/siRNA by cathodic electrodeposition, designated as NT-GPP/siRNA. NT-GPP/siRNA possessed benign cytocompatibility, as evaluated by cell adhesion and proliferation. Cellular uptake and knockdown efficiency of the NT-GPP/siRNA were assessed by MC3T3-E1 cells, which exhibited high siRNA delivery efficiency and sustained target gene silencing. Casein kinase-2 interacting protein-1 (Ckip-1) is a negative regulator of bone formation. siRNA-targeting Ckip-1 (siCkip-1) was introduced to the implant, and a series of in vitro and in vivo experiments were carried out to evaluate the osteogenic capacity of NT-GPP/siCkip-1. NT-GPP/siCkip-1 dramatically improved the in vitro osteogenic differentiation of MC3T3-E1 cells in terms of improved osteogenesis-related gene expression, and increased alkaline phosphatase (ALP) production, collagen secretion, and extracellular matrix (ECM) mineralization. Moreover, NT-GPP/siCkip-1 led to apparently enhanced in vivo osseointegration, as indicated by histological staining and EDX line scanning. Collectively, these findings suggest that NT-GPP/siRNA represents a practicable and promising approach for implant functionalization, showing clinical potential for dental and orthopedic applications.

  9. Abrupt GaP/Si hetero-interface using bistepped Si buffer

    Energy Technology Data Exchange (ETDEWEB)

    Ping Wang, Y., E-mail: yanping.wang@insa-rennes.fr; Kuyyalil, J.; Nguyen Thanh, T.; Almosni, S.; Bernard, R.; Tremblay, R.; Da Silva, M.; Létoublon, A.; Rohel, T.; Tavernier, K.; Le Corre, A.; Cornet, C.; Durand, O. [UMR FOTON, CNRS, INSA Rennes, Rennes F-35708 (France); Stodolna, J.; Ponchet, A. [CEMES-CNRS, Université de Toulouse, 29 rue Jeanne Marvig, BP 94347, 31055 Toulouse Cedex 04 (France); Bahri, M.; Largeau, L.; Patriarche, G. [Laboratoire de Photonique et Nanostructures, CNRS UPR 20, Route de Nozay, Marcoussis 91460 (France); Magen, C. [LMA, INA-ARAID, and Departamento de Física de la Materia Condensada, Universidad de Zaragoza, 50018 Zaragoza (Spain)

    2015-11-09

    We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth.

  10. Abrupt GaP/Si hetero-interface using bistepped Si buffer

    International Nuclear Information System (INIS)

    Ping Wang, Y.; Kuyyalil, J.; Nguyen Thanh, T.; Almosni, S.; Bernard, R.; Tremblay, R.; Da Silva, M.; Létoublon, A.; Rohel, T.; Tavernier, K.; Le Corre, A.; Cornet, C.; Durand, O.; Stodolna, J.; Ponchet, A.; Bahri, M.; Largeau, L.; Patriarche, G.; Magen, C.

    2015-01-01

    We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth

  11. Si quantum dot structures and their applications

    Science.gov (United States)

    Shcherbyna, L.; Torchynska, T.

    2013-06-01

    This paper presents briefly the history of emission study in Si quantum dots (QDs) in the last two decades. Stable light emission of Si QDs and NCs was observed in the spectral ranges: blue, green, orange, red and infrared. These PL bands were attributed to the exciton recombination in Si QDs, to the carrier recombination through defects inside of Si NCs or via oxide related defects at the Si/SiOx interface. The analysis of recombination transitions and the different ways of the emission stimulation in Si QD structures, related to the element variation for the passivation of surface dangling bonds, as well as the plasmon induced emission and rare earth impurity activation, have been presented. The different applications of Si QD structures in quantum electronics, such as: Si QD light emitting diodes, Si QD single union and tandem solar cells, Si QD memory structures, Si QD based one electron devices and double QD structures for spintronics, have been discussed as well. Note the significant worldwide interest directed toward the silicon-based light emission for integrated optoelectronics is related to the complementary metal-oxide semiconductor compatibility and the possibility to be monolithically integrated with very large scale integrated (VLSI) circuits. The different features of poly-, micro- and nanocrystalline silicon for solar cells, that is a mixture of both amorphous and crystalline phases, such as the silicon NCs or QDs embedded in a α-Si:H matrix, as well as the thin film 2-cell or 3-cell tandem solar cells based on Si QD structures have been discussed as well. Silicon NC based structures for non-volatile memory purposes, the recent studies of Si QD base single electron devices and the single electron occupation of QDs as an important component to the measurement and manipulation of spins in quantum information processing have been analyzed as well.

  12. Ion beam processes in Si

    International Nuclear Information System (INIS)

    Holland, O.W.; Narayan, J.; Fathy, D.

    1984-07-01

    Observation of the effects of implants of energetic ions at high dose rates into Si have produced some exciting and interesting results. The mechanism whereby displacement damage produced by ions self-anneals during high dose rate implantation is discussed. It is shown that ion beam annealing (IBA) offers in certain situations unique possibilities for damage annealing. Annealing results of the near surface in Si with a buried oxide layer, formed by high dose implantation, are presented in order to illustrate the advantages offered by IBA. It is also shown that ion irradiation can stimulate the epitaxial recrystallization of amorphous overlayers in Si. The nonequilibrium alloying which results from such epitaxial processes is discussed as well as mechanisms which limit the solid solubility during irradiation. Finally, a dose rate dependency for the production of stable damage by ion irradiation at a constant fluence has been observed. For low fluence implants, the amount of damage is substantially greater in the case of high flux rather than low flux implantation

  13. Characterization of Hamamatsu 64-channel TSV SiPMs

    Science.gov (United States)

    Renschler, Max; Painter, William; Bisconti, Francesca; Haungs, Andreas; Huber, Thomas; Karus, Michael; Schieler, Harald; Weindl, Andreas

    2018-04-01

    The Hamamatsu UV-light enhanced 64-channel SiPM array of the newest generation (S13361-3050AS-08) has been examined for the purpose of being used for the Silicon Elementary Cell Add-on (SiECA) of the EUSO-SPB balloon experiment. At a room temperature of 19 . 5 °C, the average measured breakdown voltage of the array is (51 . 65 ± 0 . 11) V, the average gain is measured to (2 . 10 ± 0 . 07) ṡ 106 and the average photon detection efficiency results to (44 . 58 ± 1 . 80) % at a wavelength of (423 ± 8) nm and a bias voltage of 55 . 2V. The average dark-count rate is (0 . 69 ± 0 . 12) MHz, equivalent to a dark count rate per SiPM area of (57 ± 12) kHz /mm2, and the crosstalk probability is measured to (3 . 96 ± 0 . 64) %. These results confirm the information given by the manufacturer. Measurements performed with the newly installed Single Photon Calibration Stand at KIT (SPOCK) show the improved sensitivity to photons with wavelengths lower than 400 nm compared to the SiPM array S12642-0808PA-50, which was also investigated for comparison. Additional measurements confirm the strong temperature dependence of the SiPM characteristics as given in the data sheet. All the characterized parameters appear to be sufficiently uniform to build up a focal surface of SiPM arrays fulfilling the requirements for a telescope detecting photons in the UV range.

  14. MarsSI: Martian surface data processing information system

    Science.gov (United States)

    Quantin-Nataf, C.; Lozac'h, L.; Thollot, P.; Loizeau, D.; Bultel, B.; Fernando, J.; Allemand, P.; Dubuffet, F.; Poulet, F.; Ody, A.; Clenet, H.; Leyrat, C.; Harrisson, S.

    2018-01-01

    MarsSI (Acronym for Mars System of Information, https://emars.univ-lyon1.fr/MarsSI/, is a web Geographic Information System application which helps managing and processing martian orbital data. The MarsSI facility is part of the web portal called PSUP (Planetary SUrface Portal) developed by the Observatories of Paris Sud (OSUPS) and Lyon (OSUL) to provide users with efficient and easy access to data products dedicated to the martian surface. The portal proposes 1) the management and processing of data thanks to MarsSI and 2) the visualization and merging of high level (imagery, spectral, and topographic) products and catalogs via a web-based user interface (MarsVisu). The portal PSUP as well as the facility MarsVisu is detailed in a companion paper (Poulet et al., 2018). The purpose of this paper is to describe the facility MarsSI. From this application, users are able to easily and rapidly select observations, process raw data via automatic pipelines, and get back final products which can be visualized under Geographic Information Systems. Moreover, MarsSI also contains an automatic stereo-restitution pipeline in order to produce Digital Terrain Models (DTM) on demand from HiRISE (High Resolution Imaging Science Experiment) or CTX (Context Camera) pair-images. This application is funded by the European Union's Seventh Framework Programme (FP7/2007-2013) (ERC project eMars, No. 280168) and has been developed in the scope of Mars, but the design is applicable to any other planetary body of the solar system.

  15. Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

    NARCIS (Netherlands)

    Dobrovolskiy, S.; Yakshin, Andrey; Tichelaar, F.D.; Verhoeven, J.; Louis, Eric; Bijkerk, Frederik

    2010-01-01

    Si/SiC multilayer systems for XUV reflection optics with a periodicity of 10–20 nm were produced by sequential deposition of Si and implantation of 1 keV View the MathML source ions. Only about 3% of the implanted carbon was transferred into the SiC, with a thin, 0.5–1 nm, buried SiC layer being

  16. Stability analysis of SiO2/SiC multilayer coatings

    International Nuclear Information System (INIS)

    Fu Zhiqiang; Jean-Charles, R.

    2006-01-01

    The stability behaviours of SiC coatings and SiO 2 /SiC coatings in helium with little impurities are studied by HSC Chemistry 4.1, the software for analysis of Chemical reaction and equilibrium in multi-component complex system. It is found that in helium with a low partial pressure of oxidative impurities under different total pressure, the key influence factor controlling T cp of SiC depends is the partial pressure of oxidative impurities; T cp of SiC increases with the partial pressure of oxidative impurities. In helium with a low partial pressure of different impurities, the key influence factor of T cs of SiO 2 are both the partial pressure of impurities and the amount of impurities for l mol SiO 2 ; T cs of SiO 2 increases with the partial pressure of oxidative impurities at the same amount of the impurities for 1 mol SiO 2 while it decreases with the amount of the impurities for 1 mm SiO 2 at the same partial pressure of the impurities. The influence of other impurities on T cp of SiC in He-O 2 is studied and it is found that CO 2 , H 2 O and N-2 increase T cp of SiC in He-O 2 while H 2 , CO and CH 4 decrease T cp of SiC He-O 2 . When there exist both oxidative impurities and reductive impurities, their effect on T cs of SiO 2 can be suppressed by the other. In HTR-10 operation atmosphere, SiO 2 /SiC coatings can keep stable status at higher temperature than SiC coatings, so SiO 2 /SiC coatings is more suitable to improve the oxidation resistance of graphite in HTR-10 operation atmosphere compared with SiC coatings. (authors)

  17. (113) Facets of Si-Ge/Si Islands; Atomic Scale Simulation

    Science.gov (United States)

    Kassem, Hassan

    We have studied, by computer simulation, some static and vibrationnal proprieties of SiGe/Si islands. We have used a Valence Force Field combined to Monte Carlo technique to study the growth of Ge and SiGe on (001)Si substrates. We have focalised on the case of large pyramidal islands presenting (113) facets on the free (001)Si surface with various non uniform composition inside the islands. The deformation inside the islands and Raman spectroscopy are discussed.

  18. Porous SiC/SiC composites development for industrial application

    International Nuclear Information System (INIS)

    Maeta, S.; Hinoki, T.

    2014-01-01

    Silicon carbide (SiC) is promising structural materials in nuclear fields due to an excellent irradiation resistance and low activation characteristics. Conventional SiC fibers reinforced SiC matrix (SiC/SiC composites) fabricated by liquid phase sintering (LPS-SiC/SiC composites) have been required high cost and long processing time. And microstructure and mechanical property data of finally obtained LPS-SiC/SiC composites are easily scattered, because quality of the composites depend on personal skill. Thus, conventional LPS-SiC/SiC composites are inadequate for industrial use. In order to overcome these issues, the novel “porous SiC/SiC composites” have been developed by means of liquid phase sintering fabrication process. The composites consist of porous SiC matrix and SiC fibers without conventional carbon interfacial layer. The composites don’t have concerns of the degradation interfacial layer at the severe accident. Porous SiC/SiC composites preform was prepared with a thin sheet shape of SiC, sintering additives and carbon powder mixture by tape casting process which was adopted because of productive and high yielding rate fabrication process. The preform was stacked with SiC fibers and sintered in hot-press at the high temperature in argon environment. The sintered preform was decarburized obtain porous matrix structure by heat-treatment in air. Moreover, mechanical property data scattering of the obtained porous SiC/SiC composites decreased. In the flexural test, the porous SiC/SiC composites showed pseudo-ductile behavior with sufficient strength even after heat treatment at high temperature in air. From these conclusions, it was proven that porous SiC/SiC composites were reliable material at severe environment such as high temperature in air, by introducing tape casting fabrication process that could produce reproducible materials with low cost and simple way. Therefore development of porous SiC/SiC composites for industrial application was

  19. Thermal shock behaviour of SiC-fibre-reinforced glasses

    International Nuclear Information System (INIS)

    Klug, T.; Reichert, J.; Brueckner, R.

    1992-01-01

    The preparation of two SiC-fibre-reinforced glasses with very different thermal expansion coefficients and glass transition temperatures is described and the influence of long-time temperature and thermal shock behaviour of these composites on the mechanical properties is investigated by means of bending test experiments before and after thermal treatments. It will be shown from experiments and calculations on stresses due to thermal expansion mismatch between fibre and glass matrix that not only best mechanical properties but also best thermal shock behaviour are connected with low tensile intrinsic stresses produced by thermal expansion mismatch during preparation. The thermal shock resistance of the best composite (SiC fibre/DURAN glass) does not show a significant decrease of flexural strength even after 60 shocks from 550 to 25deg C in water, while the bulk glass sample of the same dimension was destroyed by one thermal shock from 350deg C. (orig.) [de

  20. Nanopatterning of Si(001) for bottom-up fabrication of nanostructures.

    Science.gov (United States)

    Hu, Yanfang; Kalachahi, Hedieh Hosseinzadeh; Das, Amal K; Koch, Reinhold

    2012-04-27

    The epitaxial growth of Si on Si(001) under conditions at which the (2 × n) superstructure is forming has been investigated by scanning tunneling microscopy and Monte Carlo simulations. Our experiments reveal a periodic change of the surface morphology with the surface coverage of Si. A regular (2 × n) stripe pattern is observed at coverages of 0.7-0.9 monolayers that periodically alternates with less dense surface structures at lower Si surface coverages. The MC simulations show that the growth of Si is affected by step-edge barriers, which favors the formation of a rather uniform two-dimensional framework-like configuration. Subsequent deposition of Ge onto the (2 × n) stripe pattern yields a dense array of small Ge nanostructures.

  1. Observation of microstructure of hydrated Ca3SiO5

    International Nuclear Information System (INIS)

    Mori, Kazuhiro; Sato, Takashi; Fukunaga, Toshiharu; Oishi, Koji; Kimura, Katsuhiko; Iwase, Kenji; Sugiyama, Masaaki; Itoh, Keiji; Shikanai, Fumihito; Wuernisha, Tuerxun; Yonemura, Masao; Sulistyanintyas, Dyah; Tsukushi, Itaru; Takata, Shinich; Otomo, Toshiya; Kamiyma, Takashi; Kawai, Masayoshi

    2006-01-01

    Quasi-elastic neutron scattering experiments were carried out to evaluate the hydration rate of tricalcium silicate (Ca 3 SiO 5 ). Furthermore, in the early hydration period, a variation in surface roughness of Ca 3 SiO 5 was observed in nano-scale by the small-angle neutron scattering. From these results, it was found that the hydration rate of Ca 3 SiO 5 is suppressed when the surface of Ca 3 SiO 5 becomes rough through the creation of hydration products C-S-H gel and Ca(OH) 2 , and this roughness is associated with changes in the Ca 3 SiO 5 hydration rate

  2. Double transparent conducting layers for Si photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Yun, Ju-Hyung [Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, NY 14260 (United States); Kim, Joondong, E-mail: joonkim@incheon.ac.kr [Department of Electrical Engineering, Incheon National University, Incheon, 406772 (Korea, Republic of); Park, Yun Chang [Measurement and Analysis Division, National Nanofab Center (NNFC), Daejeon 305806 (Korea, Republic of); Moon, Sang-Jin [Energy Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon 305-600 (Korea, Republic of); Anderson, Wayne A. [Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, NY 14260 (United States)

    2013-11-29

    Double transparent conductive oxide (TCO) film-embedded Si heterojunction solar cells were fabricated. An intentional doping was not applied for heterojunction solar cells due to the spontaneous Schottky junction formation between TCO films and an n-type Si substrate. Three different TCO coatings were formed by sputtering method for an Al-doped ZnO (AZO) film, an indium-tin-oxide (ITO) film and double stacks of ITO/AZO films. An improved crystalline ITO film was grown on an AZO template upon hetero-epitaxial growth. This double TCO films-embedded Si (ITO/AZO/Si) heterojunction solar cell provided significantly enhanced efficiency of 9.23 % as compared to the single TCO/Si (ITO/Si or AZO/Si) devices due to the optical and the electrical benefits. The effective arrangement of TCO films (ITO/AZO) provides benefits of a lower front contact resistance and a smaller band offset to Si leading enhanced photovoltaic performances. This demonstrates a potential scheme for an effective TCO film-embedded heterojunction Si solar cell. - Highlights: • Double transparent conducting oxide films form a heterojunction to Si. • A quality indium-tin-oxide film was grown above an Al-doped zinc oxide template. • Heterojunction Si solar cell was made without an intentional doping process.

  3. Dynamic behaviors of laser ablated Si particles

    International Nuclear Information System (INIS)

    Ohyanagi, T.; Murakami, K.; Miyashita, A.; Yoda, O.

    1995-01-01

    The dynamics of laser-ablated Si particles produced by laser ablation have been investigated by time-and-space resolved X-ray absorption spectroscopy in a time scale ranging from 0 ns to 120 ns with a time resolution of 10 ns. Neutral and charged particles are observed through all X-ray absorption spectra. Assignments of transitions from 2s and 2p initial states to higher Rydberg states of Si atom and ions are achieved, and we experimentally determine the L II,III absorption edges of neutral Si atom (Si 0 ) and Si + , Si 2+ , Si 3+ and Si 4+ ions. The main ablated particles are found to be Si atom and Si ions in the initial stage of 0 ns to 120 ns. The relative amounts depend strongly on times and laser energy densities. We find that the spatial distributions of particles produced by laser ablation are changed with supersonic helium gas bombardment, but no cluster formation takes place. This suggests that a higher-density region of helium gas is formed at the top of the plume of ablated particles, and free expansion of particles is restrained by this helium cloud, and that it takes more than 120 ns to form Si clusters. (author)

  4. Double transparent conducting layers for Si photovoltaics

    International Nuclear Information System (INIS)

    Yun, Ju-Hyung; Kim, Joondong; Park, Yun Chang; Moon, Sang-Jin; Anderson, Wayne A.

    2013-01-01

    Double transparent conductive oxide (TCO) film-embedded Si heterojunction solar cells were fabricated. An intentional doping was not applied for heterojunction solar cells due to the spontaneous Schottky junction formation between TCO films and an n-type Si substrate. Three different TCO coatings were formed by sputtering method for an Al-doped ZnO (AZO) film, an indium-tin-oxide (ITO) film and double stacks of ITO/AZO films. An improved crystalline ITO film was grown on an AZO template upon hetero-epitaxial growth. This double TCO films-embedded Si (ITO/AZO/Si) heterojunction solar cell provided significantly enhanced efficiency of 9.23 % as compared to the single TCO/Si (ITO/Si or AZO/Si) devices due to the optical and the electrical benefits. The effective arrangement of TCO films (ITO/AZO) provides benefits of a lower front contact resistance and a smaller band offset to Si leading enhanced photovoltaic performances. This demonstrates a potential scheme for an effective TCO film-embedded heterojunction Si solar cell. - Highlights: • Double transparent conducting oxide films form a heterojunction to Si. • A quality indium-tin-oxide film was grown above an Al-doped zinc oxide template. • Heterojunction Si solar cell was made without an intentional doping process

  5. Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures

    International Nuclear Information System (INIS)

    Varzgar, John B.; Kanoun, Mehdi; Uppal, Suresh; Chattopadhyay, Sanatan; Tsang, Yuk Lun; Escobedo-Cousins, Enrique; Olsen, Sarah H.; O'Neill, Anthony; Hellstroem, Per-Erik; Edholm, Jonas; Ostling, Mikael; Lyutovich, Klara; Oehme, Michael; Kasper, Erich

    2006-01-01

    The reliability of gate oxides on bulk Si and strained Si (s-Si) has been evaluated using constant voltage stressing (CVS) to investigate their breakdown characteristics. The s-Si architectures exhibit a shorter life time compared to that of bulk Si, which is attributed to higher bulk oxide charges (Q ox ) and increased surface roughness in the s-Si structures. The gate oxide in the s-Si structure exhibits a hard breakdown (HBD) at 1.9 x 10 4 s, whereas HBD is not observed in bulk Si up to a measurement period of 1.44 x 10 5 s. The shorter lifetime of the s-Si gate oxide is attributed to a larger injected charge (Q inj ) compared to Q inj in bulk Si. Current-voltage (I-V) measurements for bulk Si samples at different stress intervals show an increase in stress induced leakage current (SILC) of two orders in the low voltage regime from zero stress time to up to 5 x 10 4 s. In contrast, superior performance enhancements in terms of drain current, maximum transconductance and effective channel mobility are observed in s-Si MOSFET devices compared to bulk Si. The results from this study indicate that further improvement in gate oxide reliability is needed to exploit the sustained performance enhancement of s-Si devices over bulk Si

  6. Innovative SiC/SiC composite for nuclear applications

    International Nuclear Information System (INIS)

    Chaffron, L.; Sauder, C.; Lorrette, C.; Briottet, L.; Michaux, A.; Gelebart, L.; Coupe, A.; Zabiego, M.; Le Flem, M.; Seran, J. L.

    2013-01-01

    Among various refractory materials, SiC/SiC ceramic matrix composites (CMC) are of prime interest for fusion and advanced fission energy applications, due to their excellent irradiation tolerance and safety features (low activation, low tritium permeability,K). Initially developed as fuel cladding materials for the Fourth generation Gas cooled Fast Reactor (GFR), this material has been recently envisaged by CEA for different core structures of Sodium Fast Reactor (SFR) which combines fast neutrons and high temperature (500 deg.C). Regarding fuel cladding generic application, in the case of GFR, the first challenge facing this project is to demonstrate the feasibility of a fuel operating under very harsh conditions that are (i) temperatures of structures up to 700 deg.C in nominal and over 1600 deg.C in accidental conditions, (ii) irradiation damage higher than 60 dpa SiC , (iii) neutronic transparency, which disqualifies conventional refractory metals as structural core materials, (iv) mechanical behavior that guarantees in most circumstances the integrity of the first barrier (e.g.: ε> 0.5%), which excludes monolithic ceramics and therefore encourages the development of new types of fibrous composites SiC/SiC adapted to the fast reactor conditions. No existing material being capable to match all these requirements, CEA has launched an ambitious program of development of an advanced material satisfying the specifications [1]. This project, that implies many laboratories, inside and outside CEA, has permitted to obtain a very high quality compound that meets most of the challenging requirements. We present hereinafter few recent results obtained regarding the development of the composite. One of the most relevant challenges was to make a gas-tight composite up to the ultimate rupture. Indeed, multi-cracking of the matrix is the counterpart of the damageable behavior observed in these amazing compounds. Among different solutions envisaged, an innovative one has been

  7. Effect of ultraviolet rays in low temperature Si02 deposition

    International Nuclear Information System (INIS)

    Calix, V.M.; Peccoud, L.; Chevallier, M.

    1976-09-01

    Vitreous silicon dioxide films have been prepared on silicon wafers by the oxidation of SiH 2 at temperature below 360 deg C. In this experiment the samples were exposed to ultraviolet rays during deposition process. Results show that there is marked effect on the deposition rate which in turn is temperature dependent. The physical characteristics between the normal and ultraviolet-enhanced deposition show an increase of minute nodules of the latter

  8. Characterization of defects in Si and SiO2-Si using positrons

    International Nuclear Information System (INIS)

    Asoka-Kumar, P.; Lynn, K.G.

    1993-01-01

    Positron annihilation spectroscopy of overlayers, interfaces, and buried regions of semiconductors has seen a rapid growth in recent years. The characteristics of the annihilation gamma rays depend strongly on the local environment of the annihilation sites, and can be used to probe defect concentrations in a range inaccessible to conventional defect probes. Some of the recent success of the technique in examining low concentrations of point defects in technologically important Si-based structures is discussed

  9. MuSiK Projekt:Multimaterialdruck von C/Si/SiC-Keramiken

    OpenAIRE

    Marigo, Gloria; Wahl, Larissa; Nauditt, Gotthard

    2017-01-01

    Poster über den ersten 6 Monate von MuSiK Projekt. Additive Verfahren wurden ursprünglich zur effizienten Herstellung von Mustern und Prototypen entwickelt und bieten besondere Einsatzpotentiale, die mittlerweile auch für die Kleinserienproduktion hochinteressant sind. Im Bereich der keramischen Komponenten ist der Einsatz additiver Verfahren bislang nicht weit verbreitet. Ein Grund dafür ist unter anderem die eingeschränkte Verfügbarkeit der notwendigen Fertigungsanlagen und entsprech...

  10. Formation, structure, and phonon confinement effect of nanocrystalline Si1-xGex in SiO2-Si-Ge cosputtered films

    International Nuclear Information System (INIS)

    Yang, Y.M.; Wu, X.L.; Siu, G.G.; Huang, G.S.; Shen, J.C.; Hu, D.S.

    2004-01-01

    Using magnetron cosputtering of SiO 2 , Ge, and Si targets, Si-based SiO 2 :Ge:Si films were fabricated for exploring the influence of Si target proportion (P Si ) and annealing temperature (Ta) on formation, local structure, and phonon properties of nanocrystalline Si 1-x Ge x (nc-Si 1-x Ge x ). At low P Si and Ta higher than 800 deg. C, no nc-Si 1-x Ge x but a kind of composite nanocrystal consisting of a Ge core, GeSi shell, and amorphous Si outer shell is formed in the SiO 2 matrix. At moderate P Si , nc-Si 1-x Ge x begins to be formed at Ta=800 deg. C and coexists with nc-Ge at Ta=1100 deg. C. At high P Si , it was disclosed that both optical phonon frequency and lattice spacing of nc-Si 1-x Ge x increase with raising Ta. The possible origin of this phenomenon is discussed by considering three factors, the phonon confinement, strain effect, and composition variation of nc-Si 1-x Ge x . This work will be helpful in understanding the growth process of ternary GeSiO films and beneficial to further investigations on optical properties of nc-Ge 1-x Si x in the ternary matrix

  11. Oxidation protection of multilayer CVD SiC/B/SiC coatings for 3D C/SiC composite

    International Nuclear Information System (INIS)

    Liu Yongsheng; Cheng Laifei; Zhang Litong; Wu Shoujun; Li Duo; Xu Yongdong

    2007-01-01

    A CVD boron coating was introduced between two CVD SiC coating layers. EDS and XRD results showed that the CVD B coating was a boron crystal without other impurity elements. SEM results indicated that the CVD B coating was a flake-like or column-like crystal with a compact cross-section. The crack width in the CVD SiC coating deposited on CVD B is smaller than that in a CVD SiC coating deposited on CVD SiC coating. After oxidation at 700 deg. C and 1000 deg. C, XRD results indicated that the coating was covered by product B 2 O 3 or B 2 O 3 .xSiO 2 film. The cracks were sealed as observed by SEM. There was a large amount of flake-like material on hybrid coating surface after oxidation at 1300 deg. C. Oxidation weight loss and residual flexural strength results showed that hybrid SiC/B/SiC multilayer coating provided better oxidation protection for C/SiC composite than a three layer CVD SiC coating at temperatures from 700 deg. C to 1000 deg. C for 600 min, but worse oxidation protection above 1000 deg. C due to the large amount of volatilization of B 2 O 3 or B 2 O 3 .xSiO 2

  12. Mechanical behavior of SiCf/SiC composites with alternating PyC/SiC multilayer interphases

    International Nuclear Information System (INIS)

    Yu, Haijiao; Zhou, Xingui; Zhang, Wei; Peng, Huaxin; Zhang, Changrui

    2013-01-01

    Highlights: ► Superior combination of flexural strength and fracture toughness of the 3D SiC/SiC composite was achieved by interface tailoring. ► Resulted composite possesses a much higher flexural strength and fracture toughness than its counterparts in literatures. ► Mechanisms that PyC/SiC multilayer coatings improve the mechanical properties were illustrated. -- Abstract: In order to tailor the fiber–matrix interface of continuous silicon carbide fiber reinforced silicon carbide (SiC f /SiC) composites for improved fracture toughness, alternating pyrolytic carbon/silicon carbide (PyC/SiC) multilayer coatings were applied to the KD-I SiC fibers using chemical vapor deposition (CVD) method. Three dimensional (3D) KD-I SiC f /SiC composites reinforced by these coated fibers were fabricated using a precursor infiltration and pyrolysis (PIP) process. The interfacial characteristics were determined by the fiber push-out test and microstructural examination using scanning electron microscopy (SEM). The effect of interface coatings on composite mechanical properties was evaluated by single-edge notched beam (SENB) test and three-point bending test. The results indicate that the PyC/SiC multilayer coatings led to an optimum interfacial bonding between fibers and matrix and greatly improved the fracture toughness of the composites.

  13. An Isotope Study of Hydrogenation of poly-Si/SiOx Passivated Contacts for Si Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Schnabel, Manuel; Nemeth, William; van de Loo, Bas, W.H.; Macco, Bart; Kessels, Wilhelmus, M.M.; Stradins, Paul; Young, David, L.

    2017-06-26

    For many years, the record Si solar cell efficiency stood at 25.0%. Only recently have several companies and institutes managed to produce more efficient cells, using passivated contacts of made doped poly-Si or a-Si:H and a passivating intrinsic interlayer in all cases. Common to these designs is the need to passivate the layer stack with hydrogen. In this contribution, we perform a systematic study of passivated contact passivation by hydrogen, using poly-Si/SiOx passivated contacts on n-Cz-Si, and ALD Al2O3 followed by a forming gas anneal (FGA) as the hydrogen source. We study p-type and n-type passivated contacts with implied Voc exceeding 690 and 720 mV, respectively, and perform either the ALD step or the FGA with deuterium instead of hydrogen in order to separate the two processes via SIMS. By examining the deuterium concentration at the SiOx in both types of samples, we demonstrate that the FGA supplies negligible hydrogen species to the SiOx, regardless of whether the FGA is hydrogenated or deuterated. Instead, it supplies the thermal energy needed for hydrogen species in the Al2O3 to diffuse there. Furthermore, the concentration of hydrogen species at the SiOx can saturate while implied Voc continues to increase, showing that the energy from the FGA is also required for hydrogen species already at the SiOx to find recombination-active defects to passivate.

  14. Fiber/matrix interfaces for SiC/SiC composites: Multilayer SiC coatings

    Energy Technology Data Exchange (ETDEWEB)

    Halverson, H.; Curtin, W.A. [Virginia Polytechnic Institute and State Univ., Blacksburg, VA (United States)

    1996-08-01

    Tensile tests have been performed on composites of CVI SiC matrix reinforced with 2-d Nicalon fiber cloth, with either pyrolitic carbon or multilayer CVD SiC coatings [Hypertherm High-Temperature Composites Inc., Huntington Beach, CA.] on the fibers. To investigate the role played by the different interfaces, several types of measurements are made on each sample: (i) unload-reload hysteresis loops, and (ii) acoustic emission. The pyrolitic carbon and multilayer SiC coated materials are remarkably similar in overall mechanical responses. These results demonstrate that low-modulus, or compliant, interface coatings are not necessary for good composite performance, and that complex, hierarchical coating structures may possibly yield enhanced high-temperature performance. Analysis of the unload/reload hysteresis loops also indicates that the usual {open_quotes}proportional limit{close_quotes} stress is actually slightly below the stress at which the 0{degrees} load-bearing fibers/matrix interfaces slide and are exposed to atmosphere.

  15. Grain Size and Phase Purity Characterization of U3Si2 Pellet Fuel

    Energy Technology Data Exchange (ETDEWEB)

    Hoggan, Rita E. [Idaho National Lab. (INL), Idaho Falls, ID (United States); Tolman, Kevin R. [Idaho National Lab. (INL), Idaho Falls, ID (United States); Cappia, Fabiola [Idaho National Lab. (INL), Idaho Falls, ID (United States); Wagner, Adrian R. [Idaho National Lab. (INL), Idaho Falls, ID (United States); Harp, Jason M. [Idaho National Lab. (INL), Idaho Falls, ID (United States)

    2018-05-01

    Characterization of U3Si2 fresh fuel pellets is important for quality assurance and validation of the finished product. Grain size measurement methods, phase identification methods using scanning electron microscopes equipped with energy dispersive spectroscopy and x-ray diffraction, and phase quantification methods via image analysis have been developed and implemented on U3Si2 pellet samples. A wide variety of samples have been characterized including representative pellets from an initial irradiation experiment, and samples produced using optimized methods to enhance phase purity from an extended fabrication effort. The average grain size for initial pellets was between 16 and 18 µm. The typical average grain size for pellets from the extended fabrication was between 20 and 30 µm with some samples exhibiting irregular grain growth. Pellets from the latter half of extended fabrication had a bimodal grain size distribution consisting of coarsened grains (>80 µm) surrounded by the typical (20-30 µm) grain structure around the surface. Phases identified in initial uranium silicide pellets included: U3Si2 as the main phase composing about 80 vol. %, Si rich phases (USi and U5Si4) composing about 13 vol. %, and UO2 composing about 5 vol. %. Initial batches from the extended U3Si2 pellet fabrication had similar phases and phase quantities. The latter half of the extended fabrication pellet batches did not contain Si rich phases, and had between 1-5% UO2: achieving U3Si2 phase purity between 95 vol. % and 98 vol. % U3Si2. The amount of UO2 in sintered U3Si2 pellets is correlated to the length of time between U3Si2 powder fabrication and pellet formation. These measurements provide information necessary to optimize fabrication efforts and a baseline for future work on this fuel compound.

  16. Suppression of superconductivity in a single Pb layer on Ag/Si(111)

    Energy Technology Data Exchange (ETDEWEB)

    Leon-Vanegas, Augusto; Kirschner, Juergen [Max Plank Instituet fuer Mikrostukturphysik (Germany); Martin Luther Univeristaet, Halle-Wittenberg (Germany); Caminale, Michael; Stepniak, Agnieszka; Oka, Hirofumi; Sanna, Antonio; Linscheid, Andreas; Sander, Dirk [Max Plank Instituet fuer Mikrostukturphysik (Germany)

    2015-07-01

    Recently, superconductivity was reported in a single layer of Pb on Si(111) with a critical temperature of 1.83 K. It has been proposed that the interaction of Pb with the Si substrate provides the electron phonon coupling to support superconductivity in this system. We have used a {sup 3}He-cooled STM with a vector magnetic field to study the effect of insertion of a Ag interlayer on the superconducting properties of a single Pb layer on Si(111). In contrast to the experiments on Pb/Si(111), the differential conductance of Pb/Ag/Si(111) does not show a gap indicative of superconductivity even at the lowest experimental temperature of 0.38 K. We ascribe this to the suppression of superconductivity. This result is explained by means of ab-initio calculations, showing that the effect of a chemical hybridization between Pb and Ag/Si occurring at the Fermi level dramatically reduces the strength of the electron phonon coupling. This contrasts with the case of Pb/Si(111), where no overlap between Pb and Si electronic states at the Fermi level is found in the calculations.

  17. Electrolytic Production of Ti5Si3/TiC Composites by Solid Oxide Membrane Technology

    Science.gov (United States)

    Zheng, Kai; Zou, Xingli; Xie, Xueliang; Lu, Changyuan; Chen, Chaoyi; Xu, Qian; Lu, Xionggang

    2018-02-01

    This paper investigated the electrolytic production of Ti5Si3/TiC composites from TiO2/SiO2/C in molten CaCl2. The solid-oxide oxygen-ion-conducting membrane tube filled with carbon-saturated liquid tin was served as the anode, and the pressed spherical TiO2/SiO2/C pellet was used as the cathode. The electrochemical reduction process was carried out at 1273 K and 3.8 V. The characteristics of the obtained cathode products and the reaction mechanism of the electroreduction process were studied by a series of time-dependent electroreduction experiments. It was found that the electroreduction process generally proceeds through the following steps: TiO2/SiO2/C → Ti2O3, CaTiO3, Ca2SiO4, SiC → Ti5Si3, TiC. The morphology observation and the elemental distribution analysis indicate that the reaction routes for Ti5Si3 and TiC products are independent during the electroreduction process.

  18. Influence of silicon concentration on linear contraction process of Al-Si binary alloy

    Directory of Open Access Journals (Sweden)

    J. Mutwil

    2008-12-01

    Full Text Available Investigations of shrinkage phenomena during solidification and cooling of aluminium and aluminium-silicon alloys (AlSi5, AlSi7, AlSi9, AlSi11, AlSi12.5, AlSi18, AlSi21 have been conducted. A vertical shrinkage rod casting with circular cross-section (constant or fixed: tapered has been used as a test sample. By constant cross-section a test channel mould was parted and allowed a constrained contraction to examine. No parted test channel mould was tapered and allowed an unconstrained contraction to investigate. In the experiments the dimensions changes of solidifying test bar and the test mould have been registered, what has allowed to explain a mechanism of pre-shrinkage extension of solidifying metals and alloys. Registered time dependence of the test bar and the test mould dimension changes have shown, that so-called pre-shrinkage extension has been by mould thermal extension caused. The investigation results have also shown that time- and temperature dependences of shrinkage of Al-Si alloys have been on silicon concentration depended.

  19. Recovery of hexagonal Si-IV nanowires from extreme GPa pressure

    Energy Technology Data Exchange (ETDEWEB)

    Smith, Bennett E. [Department of Chemistry, University of Washington, Seattle, Washington 98195 (United States); Zhou, Xuezhe; Roder, Paden B. [Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195 (United States); Abramson, Evan H. [Department of Earth and Space Sciences, University of Washington, Seattle, Washington 98195 (United States); Pauzauskie, Peter J., E-mail: peterpz@uw.edu [Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195 (United States); Fundamental and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)

    2016-05-14

    We use Raman spectroscopy in tandem with transmission electron microscopy and density functional theory simulations to show that extreme (GPa) pressure converts the phase of silicon nanowires from cubic (Si-I) to hexagonal (Si-IV) while preserving the nanowire's cylindrical morphology. In situ Raman scattering of the longitudinal transverse optical (LTO) mode demonstrates the high-pressure Si-I to Si-II phase transition near 9 GPa. Raman signal of the LTO phonon shows a decrease in intensity in the range of 9–14 GPa. Then, at 17 GPa, it is no longer detectable, indicating a second phase change (Si-II to Si-V) in the 14–17 GPa range. Recovery of exotic phases in individual silicon nanowires from diamond anvil cell experiments reaching 17 GPa is also shown. Raman measurements indicate Si-IV as the dominant phase in pressurized nanowires after decompression. Transmission electron microscopy and electron diffraction confirm crystalline Si-IV domains in individual nanowires. Computational electromagnetic simulations suggest that heating from the Raman laser probe is negligible and that near-hydrostatic pressure is the primary driving force for the formation of hexagonal silicon nanowires.

  20. Determination of optimum Si excess concentration in Er-doped Si-rich SiO2 for optical amplification at 1.54 μm

    International Nuclear Information System (INIS)

    Savchyn, Oleksandr; Coffey, Kevin R.; Kik, Pieter G.

    2010-01-01

    The presence of indirect Er 3+ excitation in Si-rich SiO 2 is demonstrated for Si-excess concentrations in the range of 2.5-37 at. %. The Si excess concentration providing the highest density of sensitized Er 3+ ions is demonstrated to be relatively insensitive to the presence of Si nanocrystals and is found to be ∼14.5 at. % for samples without Si nanocrystals (annealed at 600 deg. C) and ∼11.5 at. % for samples with Si nanocrystals (annealed at 1100 deg. C). The observed optimum is attributed to an increase in the density of Si-related sensitizers as the Si concentration is increased, with subsequent deactivation and removal of these sensitizers at high Si concentrations. The optimized Si excess concentration is predicted to generate maximum Er-related gain at 1.54 μm in devices based on Er-doped Si-rich SiO 2 .

  1. High-performance a -Si/c-Si heterojunction photoelectrodes for photoelectrochemical oxygen and hydrogen evolution

    KAUST Repository

    Wang, Hsin Ping

    2015-05-13

    Amorphous Si (a-Si)/crystalline Si (c-Si) heterojunction (SiHJ) can serve as highly efficient and robust photoelectrodes for solar fuel generation. Low carrier recombination in the photoelectrodes leads to high photocurrents and photovoltages. The SiHJ was designed and fabricated into both photoanode and photocathode with high oxygen and hydrogen evolution efficiency, respectively, by simply coating of a thin layer of catalytic materials. The SiHJ photoanode with sol-gel NiOx as the catalyst shows a current density of 21.48 mA/cm2 at the equilibrium water oxidation potential. The SiHJ photocathode with 2 nm sputter-coated Pt catalyst displays excellent hydrogen evolution performance with an onset potential of 0.640 V and a solar to hydrogen conversion efficiency of 13.26%, which is the highest ever reported for Si-based photocathodes. © 2015 American Chemical Society.

  2. Propagation of misfit dislocations from buffer/Si interface into Si

    Science.gov (United States)

    Liliental-Weber, Zuzanna [El Sobrante, CA; Maltez, Rogerio Luis [Porto Alegre, BR; Morkoc, Hadis [Richmond, VA; Xie, Jinqiao [Raleigh, VA

    2011-08-30

    Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

  3. Comparative study of anisotropic superconductivity in CaAlSi and CaGaSi

    International Nuclear Information System (INIS)

    Tamegai, T.; Uozato, K.; Kasahara, S.; Nakagawa, T.; Tokunaga, M.

    2005-01-01

    In order to get some insight into the origin of the anomalous angular dependence of H c2 in a layered intermetallic compound CaAlSi, electronic, superconducting, and structural properties are compared between CaAlSi and CaGaSi. The angular dependence of H c2 in CaGaSi is well described by the anisotropic GL model. Parallel to this finding, the pronounced lattice modulation accompanying the superstructure along the c-axis in CaAlSi is absent in CaGaSi. A relatively large specific heat jump at the superconducting transition in CaAlSi compared with CaGaSi indicates the presence of strong electron-phonon coupling in CaAlSi, which may cause the superstructure and the anomalous angular dependence of H c2

  4. Switching Performance Evaluation of Commercial SiC Power Devices (SiC JFET and SiC MOSFET) in Relation to the Gate Driver Complexity

    DEFF Research Database (Denmark)

    Pittini, Riccardo; Zhang, Zhe; Andersen, Michael A. E.

    2013-01-01

    and JFETs. The recent introduction of SiC MOSFET has proved that it is possible to have highly performing SiC devices with a minimum gate driver complexity; this made SiC power devices even more attractive despite their device cost. This paper presents an analysis based on experimental results...... of the switching losses of various commercially available Si and SiC power devices rated at 1200 V (Si IGBTs, SiC JFETs and SiC MOSFETs). The comparison evaluates the reduction of the switching losses which is achievable with the introduction of SiC power devices; this includes analysis and considerations...

  5. Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS

    International Nuclear Information System (INIS)

    Schamm, S.; Bonafos, C.; Coffin, H.; Cherkashin, N.; Carrada, M.; Ben Assayag, G.; Claverie, A.; Tence, M.; Colliex, C.

    2008-01-01

    Fabrication of systems in which Si nanoparticles are embedded in a thin silica layer is today mature for non-volatile memory and opto-electronics applications. The control of the different parameters (position, size and density) of the nanoparticles population is a key point to optimize the properties of such systems. A review of dedicated transmission electron microscopy (TEM) methods, which can be used to measure these parameters, is presented with an emphasis on those relying on electron energy-loss spectroscopy (EELS). Defocused bright-field imaging can be used in order to determine topographic information of a whole assembly of nanoparticles, but it is not efficient for looking at individual nanoparticles. High-resolution electron imaging or dark-field imaging can be of help in the case of crystalline particles but they always provide underestimated values of the nanocrystals population. EELS imaging in the low-energy-loss domain around the Si plasmon peak, which gives rise to strong signals, is the only way to visualize all Si nanoparticles within a silica film and to perform reliable size and density measurements. Two complementary types of experiments are investigated and discussed more extensively: direct imaging with a transmission electron microscope equipped with an imaging filter (EFTEM) and indirect imaging from spectrum-imaging data acquired with a scanning transmission electron microscope equipped with a spectrometer (STEM-PEELS). The direct image (EFTEM) and indirect set of spectra (STEM-PEELS) are processed in order to deliver images where the contribution of the silica matrix is minimized. The contrast of the resulting images can be enhanced with adapted numerical filters for further morphometric analysis. The two methods give equivalent results, with an easier access for EFTEM and the possibility of a more detailed study of the EELS signatures in the case of STEM-PEELS. Irradiation damage in such systems is also discussed

  6. C-H and C-C activation of n -butane with zirconium hydrides supported on SBA15 containing N-donor ligands: [(≡SiNH-)(≡SiX-)ZrH2], [(≡SiNH-)(≡SiX-)2ZrH], and[(≡SiN=)(≡SiX-)ZrH] (X = -NH-, -O-). A DFT study

    KAUST Repository

    Pasha, Farhan Ahmad; Bendjeriou-Sedjerari, Anissa; Huang, Kuo-Wei; Basset, Jean-Marie

    2014-01-01

    : [(≡SiNH-)(≡SiO-)ZrH2] (A), [(≡SiNH-)2ZrH2] (B), [(≡SiNH-)(≡SiO-) 2ZrH] (C), [(≡SiNH-)2(≡SiO-)ZrH] (D), [(≡SiN=)(≡Si-O-)ZrH] (E), and [(≡SiN=)(≡SiNH-)ZrH] (F). The roles of these hydrides have been investigated in C-H/C-C bond activation and cleavage

  7. A biomedical application of 32Si using accelerator mass spectrometry

    International Nuclear Information System (INIS)

    Di Tada, M.L.; Fifield, L.K.; Liu, K.; Cresswell, R.G.; Day, J.L.; Oldham, C.L.; Popplewell, J.; Carling, R.

    1998-01-01

    As a first application of the 32 Si tracer to a biomedical project, the first measurement of silicon uptake by a human subject has been carried out. The motivation for this study aroused from the supposition that silicate may be important in human physiology in protecting against aluminium toxicity. Indeed, in an earlier study of aluminium uptake, using the isotopic tracer, 26 Al, it had been shown that blood-Al levels following Al dosing were lower when the dose was accompanied by dissolved silicate than when it was not. An experiment was set out to determine directly the fraction absorbed from the gastrointestinal tract, and to quantify the kinetics of renal elimination, using the silicon isotopic tracer, 32 Si. A gas-filled magnet technique was developed for measuring 32 Si by AMS which allows a spatial separation of 32 S from 32 Si and hence a reduction in the counting rate entering the detector by a factor of 10 6 . The results for silicon absorption are consistent with those from earlier studies, indicating that the simultaneous ingestion of Al and silicate enhances the rate of aluminium excretion for a period of 12-24 hours

  8. Impact resistance of uncoated SiC/SiC composites

    International Nuclear Information System (INIS)

    Bhatt, Ramakrishna T.; Choi, Sung R.; Cosgriff, Laura M.; Fox, Dennis S.; Lee, Kang N.

    2008-01-01

    Two-dimensional woven SiC/SiC composites fabricated by melt infiltration method were impact tested at room temperature and at 1316 deg. C in air using 1.59-mm diameter steel-ball projectiles at velocities ranging from 115 to 400 m/s. The extent of substrate damage with increasing projectile velocity was imaged and analyzed using optical and scanning electron microscopy, and non-destructive evaluation (NDE) methods such as pulsed thermography, and computed tomography. The impacted specimens were tensile tested at room temperature to determine their residual mechanical properties. Results indicate that at 115 m/s projectile velocity, the composite showed no noticeable surface or internal damage and retained its as-fabricated mechanical properties. As the projectile velocity increased above this value, the internal damage increased and mechanical properties degraded. At velocities >300 m/s, the projectile penetrated through the composite, but the composite retained ∼50% of the ultimate tensile strength of the as-fabricated composite and exhibited non-brittle failure. Predominant internal damages are delamination of fiber plies, fiber fracture and matrix shearing

  9. Martensitic Transformations and Mechanical and Corrosion Properties of Fe-Mn-Si Alloys for Biodegradable Medical Implants

    Science.gov (United States)

    Drevet, Richard; Zhukova, Yulia; Malikova, Polina; Dubinskiy, Sergey; Korotitskiy, Andrey; Pustov, Yury; Prokoshkin, Sergey

    2018-03-01

    The Fe-Mn-Si alloys are promising materials for biodegradable metallic implants for temporary healing process in the human body. In this study, three different compositions are considered (Fe23Mn5Si, Fe26Mn5Si, and Fe30Mn5Si, all in wt pct). The phase composition analysis by XRD reveals ɛ-martensite, α-martensite, and γ-austenite in various proportions depending on the manganese amount. The DSC study shows that the starting temperature of the martensitic transformation ( M s) of the alloys decreases when the manganese content increases (416 K, 401 K, and 323 K (143 °C, 128 °C, and 50 °C) for the Fe23Mn5Si, Fe26Mn5Si, and Fe30Mn5Si alloys, respectively). Moreover, mechanical compression tests indicate that these alloys have a much lower Young's modulus ( E) than pure iron (220 GPa), i.e., 145, 133, and 118 GPa for the Fe23Mn5Si, Fe26Mn5Si, and Fe30Mn5Si alloys, respectively. The corrosion behavior of the alloys is studied in Hank's solution at 310 K (37 °C) using electrochemical experiments and weight loss measurements. The corrosion kinetics of the Fe-Mn-Si increases with the manganese content (0.48, 0.59, and 0.80 mm/year for the Fe23Mn5Si, Fe26Mn5Si, and Fe30Mn5Si alloys, respectively). The alloy with the highest manganese content shows the most promising properties for biomedical applications as a biodegradable and biomechanically compatible implant material.

  10. Effect of germanium concentrations on tunnelling current calculation of Si/Si1-xGex/Si heterojunction bipolar transistor

    Science.gov (United States)

    Hasanah, L.; Suhendi, E.; Khairrurijal

    2018-05-01

    Tunelling current calculation on Si/Si1-xGex/Si heterojunction bipolar transistor was carried out by including the coupling between transversal and longitudinal components of electron motion. The calculation results indicated that the coupling between kinetic energy in parallel and perpendicular to S1-xGex barrier surface affected tunneling current significantly when electron velocity was faster than 1x105 m/s. This analytical tunneling current model was then used to study how the germanium concentration in base to Si/Si1-xGex/Si heterojunction bipolar transistor influenced the tunneling current. It is obtained that tunneling current increased as the germanium concentration given in base decreased.

  11. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiN{sub x}/SiN{sub y} multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Xiaofan; Ma, Zhongyuan, E-mail: zyma@nju.edu.cn; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan [National Laboratory of Solid State Microstructures, Jiangsu Provincial Key Laboratory of Photonic Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

    2014-09-28

    Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN{sub x}/SiN{sub y} multilayers with high on/off ratio of 10{sup 9}. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

  12. Characterization of Si detectors, search for vertex and potentiality of detecting a light charged Higgs boson in the CMS experiment; Caracterisation des detecteurs silicium, recherche de Vertex et etude du potentiel de decouverte d'un boson de Higgs charge leger dans l'experience CMS

    Energy Technology Data Exchange (ETDEWEB)

    Estre, N

    2004-07-01

    The CMS (compact muon solenoid) detector that will be set on the future LHC (large hadron collider) accelerator will enable us to continue our search for the Higgs boson as well as to look for any hint for a new physics beyond the standard model. CMS is composed of an efficient muon detector, an electromagnetic calorimeter and of a tracker with high spatial resolution, this tracker is the topic of this thesis. The tracker will allow an accurate reconstruction of charged-particles trajectories and the reconstruction of the primary interaction vertex. The tracker's technology is based on micro-strip Si detectors, tests performed with the SPS particle beam show that these detectors have an impact reconstruction efficiency greater than 98% and a piling-up rate limited to 6%. The spatial resolution concerning particle trajectories is about 45 {mu}m for an interval of 183 {mu}m between 2 strips. The simulation for the search for a light charged Higgs boson show that an excess of {tau}{nu}{sub {tau}} + bb-bar + qq-bar' events is possible to be observed for any value of tan({beta}) up to M{sub A} = 122 GeV/c{sup 2} during the first year of operation and up to 136 GeV/c{sup 2} afterwards. With the assumption that this event excess is due to the decay of charged Higgs bosons we can state that the assessment of its mass will be possible till m{sub H} = 150 GeV/c{sup 2} with an accuracy of 15 GeV/c{sup 2}. (A.C.)

  13. Influence of substrate treatment on the growth of advanced core–shell alloys and compounds of FeSi@SiO2 and SiO2 nanowires

    CSIR Research Space (South Africa)

    Thabethe, S

    2014-12-01

    Full Text Available Advanced core–shell FeSi@SiO(subx) nanowires are observed when FeCl(sub3) vapour is made to flow over a SiO(sub2)/Si substrate at 1100 degress C. The thickness of the SiO(subx) sheath (d0) is found to depend inversely as the period of time of HF...

  14. Sintering behaviour and phase relationships of Si[sub 3]N[sub 4] ceramics in the Si[sub 3]N[sub 4]-SiO[sub 2]-MgO-Y[sub 2]O[sub 3] system. Sinterverhalten und Phasenbeziehungen von Si[sub 3]N[sub 4]-Keramiken im System Si[sub 3]N[sub 4]-SiO[sub 2]-MgO-Y[sub 2]O[sub 3

    Energy Technology Data Exchange (ETDEWEB)

    Mahoney, F.M.

    1992-10-12

    The aim of this work is the investigation of the sintering or crystallisation behaviour of Si[sub 3]N[sub 4] ceramics depending on the additive composition in the Si[sub 3]N[sub 4]-SiO[sub 2]-MgO-Y[sub 2]O[sub 3] system. With regard to the complicated manufacturing process of sintered and heat-treated Si[sub 3]N[sub 4] ceramics, one should first determine which additive compositions make complete compression possible. The effect of the composition on the volume and the viscosity of the melting phase should be cleared up, where determining the Si[sub 3]N[sub 4] solubility relative to the additive composition is of special importance. The phase relationships between Si[sub 3]N[sub 4] and the possible crystalline secondary phases should be determined for the crystallisation behaviour. Due to the very fine distribution of only a 5-15% proportion of additive in conventional Si[sub 3]N[sub 4] samples, a characterisation of the secondary phases is difficult to carry out with X-ray or REM/EDX analysis. Therefore, experiments with oxy-nitridic model samples were carried out in this work, which have the same phase relationships as conventional Si[sub 3]N[sub 4] compositions, but with an appreciably higher proportion of additive. The possibility of transferring the results of the model samples were tested on examples of three Si[sub 3]N[sub 4] ceramics. (orig.)

  15. Electrically modulated lateral photovoltage in μc-SiOx:H/a-Si:H/c-Si p-i-n structure at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jihong; Qiao, Shuang, E-mail: sqiao@hbu.edu.cn; Wang, Jianglong; Wang, Shufang, E-mail: sfwang@hbu.edu.cn; Fu, Guangsheng

    2017-04-15

    Graphical abstract: In this paper, the temperature dependence of the LPE has been experimentally studied under illumination of different lasers ranging from visible to infrared for the μc-SiOx:H/a-Si:H/c-Si p-i-n structure. It was found that the position sensitivity increases nearly linearly with wavelength from 405 nm to 980 nm in the whole temperature range, and the saturated position sensitivity decreased quickly from 32.4 mV/mm to a very low value of 1.26 mV/mm and the nonlinearity improved from 7.01% to 3.54% with temperature decreasing from 296 K to 80 K for 532 nm laser illumination. By comparing the experiment results of μc-SiOx:H/a-Si:H/c-Si and ITO/c-Si, it is suggest that the position sensitivity was mainly determined by the temperature-dependent SB and the nonlinearity was directly related to the decreased resistivity of conductive layer. When an external bias voltage was applied, the LPE improved greatly and the position sensitivity of 361.35 mV/mm under illumination of 80 mW at 80 K is 286.7 times as large as that without biased voltage. More importantly, both the position sensitivity and the nonlinearity were independent of temperature again, which can be ascribed to the large constant transmission probability and diffusion length induced by the greatly increased SB. Our research provides an essential insight on the bias voltage-modulated LPE at different temperatures, and this temperature-independent greatly improved LPE is thought to be very useful for developing novel photoelectric devices. - Highlights: • The LPE is proportional to the laser wavelength in the whole temperature range. • The LPE decreases gradually with decreasing temperature from 296 K to 80 K. • Nonlinearity of the LPV curve improves a little with decreasing temperature. • The LPE improves dramatically and is independent of temperature with the aid of a bias voltage. - Abstract: The lateral photovoltaic effect (LPE) in μc-SiOx:H/a-Si:H/c-Si p-i-n structure is studied

  16. Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers

    Science.gov (United States)

    Bonfanti, M.; Grilli, E.; Guzzi, M.; Virgilio, M.; Grosso, G.; Chrastina, D.; Isella, G.; von Känel, H.; Neels, A.

    2008-07-01

    Direct-gap and indirect-gap transitions in strain-compensated Ge/SiGe multiple quantum wells with Ge-rich SiGe barriers have been studied by optical transmission spectroscopy and photoluminescence experiments. An sp3d5s∗ tight-binding model has been adopted to interpret the experimental results. Photoluminescence spectra and their comparison with theoretical calculations prove the existence of type-I band alignment in compressively strained Ge quantum wells grown on relaxed Ge-rich SiGe buffers. The high quality of the transmission spectra opens up other perspectives for application of these structures in near-infrared optical modulators.

  17. X-ray nano-diffraction study of Sr intermetallic phase during solidification of Al-Si hypoeutectic alloy

    Energy Technology Data Exchange (ETDEWEB)

    Manickaraj, Jeyakumar; Gorny, Anton; Shankar, Sumanth, E-mail: shankar@mcmaster.ca [Light Metal Casting Research Centre (LMCRC), Department of Mechanical Engineering, McMaster University, 1280 Main Street W, Hamilton, Ontario L8S 4L7 (Canada); Cai, Zhonghou [Advanced Photon Source, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States)

    2014-02-17

    The evolution of strontium (Sr) containing intermetallic phase in the eutectic reaction of Sr-modified Al-Si hypoeutectic alloy was studied with high energy synchrotron beam source for nano-diffraction experiments and x-ray fluorescence elemental mapping. Contrary to popular belief, Sr does not seem to interfere with the Twin Plane Re-entrant Edge (TPRE) growth mechanism of eutectic Si, but evolves as the Al{sub 2}Si{sub 2}Sr phase during the eutectic reaction at the boundary between the eutectic Si and Al grains.

  18. Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts

    International Nuclear Information System (INIS)

    Zhang, B.; Yu, W.; Zhao, Q.T.; Buca, D.; Breuer, U.; Hartmann, J.-M.; Holländer, B.; Mantl, S.; Zhang, M.; Wang, X.

    2013-01-01

    We have investigated the morphology and electrical properties of NiSiGe/SiGe contact by C + ions pre-implanted into relaxed Si 0.8 Ge 0.2 layers. Cross-section transmission electron microscopy revealed that both the surface and interface of NiSiGe were improved by C + ions implantation. In addition, the effective hole Schottky barrier heights (Φ Bp ) of NiSiGe/SiGe were extracted. Φ Bp was observed to decrease substantially with an increase in C + ion implantation dose

  19. Si K-edge XANES study of SiOxCyHz amorphous polymeric materials

    International Nuclear Information System (INIS)

    Chaboy, J.; Barranco, A.; Yanguas-Gil, A.; Yubero, F.; Gonzalez-Elipe, A. R.

    2007-01-01

    This work reports on x-ray absorption spectroscopy study at the Si K edge of several amorphous SiO x C y H z polymers prepared by plasma-enhanced chemical-vapor deposition with different C/O ratios. SiO 2 and SiC have been used as reference materials. The comparison of the experimental Si K-edge x-ray absorption near-edge structure spectra with theoretical computations based on multiple scattering theory has allowed us to monitor the modification of the local coordination around Si as a function of the overall C/O ratio in this kind of materials

  20. An optically controlled SiC lateral power transistor based on SiC/SiCGe super junction structure

    International Nuclear Information System (INIS)

    Pu Hongbin; Cao Lin; Ren Jie; Chen Zhiming; Nan Yagong

    2010-01-01

    An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 μm and 0.7 μm are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively. (semiconductor devices)

  1. An optically controlled SiC lateral power transistor based on SiC/SiCGe super junction structure

    Energy Technology Data Exchange (ETDEWEB)

    Pu Hongbin; Cao Lin; Ren Jie; Chen Zhiming; Nan Yagong, E-mail: puhongbin@xaut.edu.c [Xi' an University of Technology, Xi' an 710048 (China)

    2010-04-15

    An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 {mu}m and 0.7 {mu}m are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively. (semiconductor devices)

  2. Interfacial microstructure of NiSi x/HfO2/SiO x/Si gate stacks

    International Nuclear Information System (INIS)

    Gribelyuk, M.A.; Cabral, C.; Gusev, E.P.; Narayanan, V.

    2007-01-01

    Integration of NiSi x based fully silicided metal gates with HfO 2 high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi x film. Ni content varies near the NiSi/HfO x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi x /HfO 2 interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi x /HfO x was found higher than that of poly-Si/HfO 2 , likely due to compositional non-uniformity of NiSi x . No intermixing between Hf, Ni and Si beyond interfacial roughness was observed

  3. Effect of PECVD SiNx/SiOy Nx –Si interface property on surface passivation of silicon wafer

    International Nuclear Information System (INIS)

    Jia Xiao-Jie; Zhou Chun-Lan; Zhou Su; Wang Wen-Jing; Zhu Jun-Jie

    2016-01-01

    It is studied in this paper that the electrical characteristics of the interface between SiO y N x /SiN x stack and silicon wafer affect silicon surface passivation. The effects of precursor flow ratio and deposition temperature of the SiO y N x layer on interface parameters, such as interface state density Di t and fixed charge Q f , and the surface passivation quality of silicon are observed. Capacitance–voltage measurements reveal that inserting a thin SiO y N x layer between the SiN x and the silicon wafer can suppress Q f in the film and D it at the interface. The positive Q f and D it and a high surface recombination velocity in stacks are observed to increase with the introduced oxygen and minimal hydrogen in the SiO y N x film increasing. Prepared by deposition at a low temperature and a low ratio of N 2 O/SiH 4 flow rate, the SiO y N x /SiN x stacks result in a low effective surface recombination velocity (S eff ) of 6 cm/s on a p-type 1 Ω·cm–5 Ω·cm FZ silicon wafer. The positive relationship between S eff and D it suggests that the saturation of the interface defect is the main passivation mechanism although the field-effect passivation provided by the fixed charges also make a contribution to it. (paper)

  4. Physical and electrical characteristics of Si/SiC quantum dot superlattice solar cells with passivation layer of aluminum oxide.

    Science.gov (United States)

    Tsai, Yi-Chia; Li, Yiming; Samukawa, Seiji

    2017-12-01

    In this work, we numerically simulate the silicon (Si)/silicon carbide (SiC) quantum dot superlattice solar cell (SiC-QDSL) with aluminum oxide (Al 2 O 3 -QDSL) passivation. By exploiting the passivation layer of Al 2 O 3 , the high photocurrent and the conversion efficiency can be achieved without losing the effective bandgap. Based on the two-photon transition mechanism in an AM1.5 and a one sun illumination, the simulated short-circuit current (J sc ) of 4.77 mA cm -2 is very close to the experimentally measured 4.75 mA cm -2 , which is higher than those of conventional SiC-QDSLs. Moreover, the efficiency fluctuation caused by the structural variation is less sensitive by using the passivation layer. A high conversion efficiency of 17.4% is thus estimated by adopting the QD's geometry used in the experiment; and, it can be further boosted by applying a hexagonal QD formation with an inter-dot spacing of 0.3 nm.

  5. Physical and electrical characteristics of Si/SiC quantum dot superlattice solar cells with passivation layer of aluminum oxide

    Science.gov (United States)

    Tsai, Yi-Chia; Li, Yiming; Samukawa, Seiji

    2017-12-01

    In this work, we numerically simulate the silicon (Si)/silicon carbide (SiC) quantum dot superlattice solar cell (SiC-QDSL) with aluminum oxide (Al2O3-QDSL) passivation. By exploiting the passivation layer of Al2O3, the high photocurrent and the conversion efficiency can be achieved without losing the effective bandgap. Based on the two-photon transition mechanism in an AM1.5 and a one sun illumination, the simulated short-circuit current (J sc) of 4.77 mA cm-2 is very close to the experimentally measured 4.75 mA cm-2, which is higher than those of conventional SiC-QDSLs. Moreover, the efficiency fluctuation caused by the structural variation is less sensitive by using the passivation layer. A high conversion efficiency of 17.4% is thus estimated by adopting the QD’s geometry used in the experiment; and, it can be further boosted by applying a hexagonal QD formation with an inter-dot spacing of 0.3 nm.

  6. Silicon-enhanced resistance to cadmium toxicity in Brassica chinensis L. is attributed to Si-suppressed cadmium uptake and transport and Si-enhanced antioxidant defense capacity

    Energy Technology Data Exchange (ETDEWEB)

    Song Alin [College of Resources and Environmental Sciences, Nanjing Agricultural University, Nanjing 210095 (China); Li Zhaojun [Ministry of Agriculture Key Laboratory of Crop Nutrition and Fertilization, Institute of Agricultural Resources and Regional Planning, Chinese Academy of Agricultural Sciences, Beijing 100081 (China); Zhang Jie [College of Resources and Environmental Sciences, Nanjing Agricultural University, Nanjing 210095 (China); Xue Gaofeng; Fan Fenliang [Ministry of Agriculture Key Laboratory of Crop Nutrition and Fertilization, Institute of Agricultural Resources and Regional Planning, Chinese Academy of Agricultural Sciences, Beijing 100081 (China); Liang Yongchao, E-mail: ycliang@caas.ac.cn [College of Resources and Environmental Sciences, Nanjing Agricultural University, Nanjing 210095 (China); Ministry of Agriculture Key Laboratory of Crop Nutrition and Fertilization, Institute of Agricultural Resources and Regional Planning, Chinese Academy of Agricultural Sciences, Beijing 100081 (China); Key Laboratory of Oasis Eco-Agriculture, College of Agriculture, Shihezi University, Shihezi 832003 (China)

    2009-12-15

    A series of hydroponics experiments were performed to investigate roles of silicon (Si) in enhancing cadmium (Cd) tolerance in two pakchoi (Brassica chinensis L.) cultivars: i.e. cv. Shanghaiqing, a Cd-sensitive cultivar, and cv. Hangyoudong, a Cd-tolerant cultivar. Plants were grown under 0.5 and 5 mg Cd L{sup -1} Cd stress without or with 1.5 mM Si. Plant growth of the Cd-tolerant cultivar was stimulated at the lower Cd level, but was decreased at the higher Cd level when plants were treated with Cd for one week. However, Plant growth was severely inhibited at both Cd levels as stress duration lasted for up to three weeks. Plant growth of the Cd-sensitive cultivar was severely inhibited at both Cd levels irrespective of Cd stress duration. Addition of Si increased shoot and root biomass of both cultivars at both Cd levels and decreased Cd uptake and root-to-shoot transport. Superoxide dismutase, catalase and ascorbate peroxidase activities decreased, but malondialdehyde and H{sub 2}O{sub 2} concentrations increased at the higher Cd level, which were counteracted by Si added. Ascorbic acid, glutathione and non-protein thiols concentrations increased at the higher Cd level, which were further intensified by addition of Si. The effects of Si and Cd on the antioxidant enzyme activity were further verified by isoenzyme analysis. Silicon was more effective in enhancing Cd tolerance in the Cd-tolerant cultivar than in the Cd-sensitive cultivar. It can be concluded that Si-enhanced Cd tolerance in B. chinensis is attributed mainly to Si-suppressed Cd uptake and root-to-shoot Cd transport and Si-enhanced antioxidant defense activity.

  7. Silicon-enhanced resistance to cadmium toxicity in Brassica chinensis L. is attributed to Si-suppressed cadmium uptake and transport and Si-enhanced antioxidant defense capacity

    International Nuclear Information System (INIS)

    Song Alin; Li Zhaojun; Zhang Jie; Xue Gaofeng; Fan Fenliang; Liang Yongchao

    2009-01-01

    A series of hydroponics experiments were performed to investigate roles of silicon (Si) in enhancing cadmium (Cd) tolerance in two pakchoi (Brassica chinensis L.) cultivars: i.e. cv. Shanghaiqing, a Cd-sensitive cultivar, and cv. Hangyoudong, a Cd-tolerant cultivar. Plants were grown under 0.5 and 5 mg Cd L -1 Cd stress without or with 1.5 mM Si. Plant growth of the Cd-tolerant cultivar was stimulated at the lower Cd level, but was decreased at the higher Cd level when plants were treated with Cd for one week. However, Plant growth was severely inhibited at both Cd levels as stress duration lasted for up to three weeks. Plant growth of the Cd-sensitive cultivar was severely inhibited at both Cd levels irrespective of Cd stress duration. Addition of Si increased shoot and root biomass of both cultivars at both Cd levels and decreased Cd uptake and root-to-shoot transport. Superoxide dismutase, catalase and ascorbate peroxidase activities decreased, but malondialdehyde and H 2 O 2 concentrations increased at the higher Cd level, which were counteracted by Si added. Ascorbic acid, glutathione and non-protein thiols concentrations increased at the higher Cd level, which were further intensified by addition of Si. The effects of Si and Cd on the antioxidant enzyme activity were further verified by isoenzyme analysis. Silicon was more effective in enhancing Cd tolerance in the Cd-tolerant cultivar than in the Cd-sensitive cultivar. It can be concluded that Si-enhanced Cd tolerance in B. chinensis is attributed mainly to Si-suppressed Cd uptake and root-to-shoot Cd transport and Si-enhanced antioxidant defense activity.

  8. Analysis and comparison of the breakdown performance of semi- insulator and dielectric passivated Si strip detectors

    CERN Document Server

    Ranjan, Kirti; Chatterji, S; Srivastava-Ajay, K; Shivpuri, R K

    2002-01-01

    The harsh radiation environment in future high-energy physics (HEP) experiments like LHC provides a challenging task to the performance of Si microstrip detectors. Normal operating condition for silicon detectors in HEP experiments are in most cases not as favourable as for experiments in nuclear physics. In HEP experiments the detector may be exposed to moisture and other adverse atmospheric environment. It is therefore utmost important to protect the sensitive surfaces against such poisonous effects. These instabilities can be nearly eliminated and the performance of Si detectors can be improved by implementing suitably passivated metal-overhang structures. This paper presents the influence of the relative permittivity of the passivant on the breakdown performance of the Si detectors using computer simulations. The semi-insulator and the dielectric passivated metal-overhang structures are compared under optimal conditions. The influence of various parameters such as passivation layer thickness, junction dep...

  9. SiGe/Si layers-early stages of plastic relaxation

    International Nuclear Information System (INIS)

    Koehler, R; Raidt, H; Neumann, W; Pfeiffer, J-U; Schaefer, H; Richter, U

    2005-01-01

    The plastic relaxation of SiGe/Si is closely related to the nucleation of misfit dislocations at early stages. We have investigated the very early stages at annealing temperatures ranging from 520 deg. C to 670 deg. C by means of x-ray topography (XRT), atomic force microscopy (AFM) and transmission electron microscopy. At misfit dislocation densities within the range accessible by XRT, i.e. up to about 1000 cm -1 , dislocations bundles predominate. This is verified by AFM and is explained by heterogeneous nucleation. The fewer the dislocations that are contained within dislocation bundles the rarer the blocking and cross slip that are observed. It is demonstrated that laser heating increases the number of nucleation centres drastically and is well suited to induce nucleation at selected sites. Furthermore, these nucleation centres provide dislocation bundles containing only a few dislocations. In contrast to this, implantation can produce defects that stop dislocation propagation quite effectively at the comparatively low temperatures used in our experiments

  10. (001) 3C SiC/Ni contact interface: In situ XPS observation of annealing induced Ni{sub 2}Si formation and the resulting barrier height changes

    Energy Technology Data Exchange (ETDEWEB)

    Tengeler, Sven, E-mail: stengeler@surface.tu-darmstadt.de [Institute of Material Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Univ. Grenoble Alpes, CNRS, LMGP, F-38000 Grenoble (France); Kaiser, Bernhard [Institute of Material Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Chaussende, Didier [Univ. Grenoble Alpes, CNRS, LMGP, F-38000 Grenoble (France); Jaegermann, Wolfram [Institute of Material Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany)

    2017-04-01

    Highlights: • Schottky behavior (Φ{sub B} = 0.41 eV) and Fermi level pining were found pre annealing. • Ni{sub 2}Si formation was confirmed for 5 min at 850 °C. • 3C/Ni{sub 2}Si Fermi level alignment is responsible for ohmic contact behavior. • Wet chemical etching (Si–OH/C–H termination) does not impair Ni{sub 2}Si formation. - Abstract: The electronic states of the (001) 3C SiC/Ni interface prior and post annealing are investigated via an in situ XPS interface experiment, allowing direct observation of the induced band bending and the transformation from Schottky to ohmic behaviour for the first time. A single domain (001) 3C SiC sample was prepared via wet chemical etching. Nickel was deposited on the sample in multiple in situ deposition steps via RF sputtering, allowing observation of the 3C SiC/Ni interface formation. Over the course of the experiments, an upward band bending of 0.35 eV was observed, along with defect induced Fermi level pinning. This indicates a Schottky type contact behaviour with a barrier height of 0.41 eV. The subsequent annealing at 850 °C for 5 min resulted in the formation of a Ni{sub 2}Si layer and a reversal of the band bending to 0.06 eV downward. Thus explaining the ohmic contact behaviour frequently reported for annealed n-type 3C SiC/Ni contacts.

  11. (001) 3C SiC/Ni contact interface: In situ XPS observation of annealing induced Ni_2Si formation and the resulting barrier height changes

    International Nuclear Information System (INIS)

    Tengeler, Sven; Kaiser, Bernhard; Chaussende, Didier; Jaegermann, Wolfram

    2017-01-01

    Highlights: • Schottky behavior (Φ_B = 0.41 eV) and Fermi level pining were found pre annealing. • Ni_2Si formation was confirmed for 5 min at 850 °C. • 3C/Ni_2Si Fermi level alignment is responsible for ohmic contact behavior. • Wet chemical etching (Si–OH/C–H termination) does not impair Ni_2Si formation. - Abstract: The electronic states of the (001) 3C SiC/Ni interface prior and post annealing are investigated via an in situ XPS interface experiment, allowing direct observation of the induced band bending and the transformation from Schottky to ohmic behaviour for the first time. A single domain (001) 3C SiC sample was prepared via wet chemical etching. Nickel was deposited on the sample in multiple in situ deposition steps via RF sputtering, allowing observation of the 3C SiC/Ni interface formation. Over the course of the experiments, an upward band bending of 0.35 eV was observed, along with defect induced Fermi level pinning. This indicates a Schottky type contact behaviour with a barrier height of 0.41 eV. The subsequent annealing at 850 °C for 5 min resulted in the formation of a Ni_2Si layer and a reversal of the band bending to 0.06 eV downward. Thus explaining the ohmic contact behaviour frequently reported for annealed n-type 3C SiC/Ni contacts.

  12. Magnetron-sputter epitaxy of β-FeSi2(220)/Si(111) and β-FeSi2(431)/Si(001) thin films at elevated temperatures

    International Nuclear Information System (INIS)

    Liu Hongfei; Tan Chengcheh; Chi Dongzhi

    2012-01-01

    β-FeSi 2 thin films have been grown on Si(111) and Si(001) substrates by magnetron-sputter epitaxy at 700 °C. On Si(111), the growth is consistent with the commonly observed orientation of [001]β-FeSi 2 (220)//[1-10]Si(111) having three variants, in-plane rotated 120° with respect to one another. However, on Si(001), under the same growth conditions, the growth is dominated by [-111]β-FeSi 2 (431)//[110]Si(001) with four variants, which is hitherto unknown for growing β-FeSi 2 . Photoelectron spectra reveal negligible differences in the valance-band and Fe2p core-level between β-FeSi 2 grown on Si(111) and Si(001) but an apparent increased Si-oxidization on the surface of β-FeSi 2 /Si(001). This phenomenon is discussed and attributed to the Si-surface termination effect, which also suggests that the Si/Fe ratio on the surface of β-FeSi 2 (431)/Si(001) is larger than that on the surface of β-FeSi 2 (220)/Si(111).

  13. Matrix densification of SiC composites by sintering process

    International Nuclear Information System (INIS)

    Kim, Young-Wook; Jang, Doo-Hee; Eom, Jung-Hye; Chun, Yong-Seong

    2007-02-01

    The objectives of this research are to develop a process for dense SiC fiber-SiC composites with a porosity of 5% or less and to develop high-strength SiC fiber-SiC composites with a strength of 500 MPa or higher. To meet the above objectives, the following research topics were investigated ; new process development for the densification of SiC fiber-SiC composites, effect of processing parameters on densification of SiC fiber-SiC composites, effect of additive composition on matrix microstructure, effects of additive composition and content on densification of SiC fiber-SiC composites, mechanical properties of SiC fiber-SiC composites, effect of fiber coating on densification and strength of SiC fiber-SiC composites, development of new additive composition. There has been a great deal of progress in the development of technologies for the processing and densification of SiC fiber-SiC composites and in better understanding of additive-densification-mechanical property relations as results of this project. Based on the progress, dense SiC fiber-SiC composites (≥97%) and high strength SiC fiber-SiC composites (≥600 MPa) have been developed. Development of 2D SiC fiber-SiC composites with a relative density of ≥97% and a strength of ≥600 MPa can be counted as a notable achievement

  14. Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001).

    Science.gov (United States)

    Li, Lianbi; Zang, Yuan; Hu, Jichao; Lin, Shenghuang; Chen, Zhiming

    2017-05-25

    The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL) on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001) Si-face by chemical vapor deposition. TEM characterizations of the p/n-Si DSL confirmed the epitaxial growth of the Si films with preferred orientation and the misfit dislocations with a Burgers vector of 1/3 at the p-Si/n-Si interface. The device had an obvious rectifying behavior, and the turn-on voltage was about 1.2 V. Under the visible illumination of 0.6 W/cm², the device demonstrated a significant photoelectric response with a photocurrent density of 2.1 mA/cm². Visible light operation of the Si-DSL/6H-SiC heterostructure was realized for the first time.

  15. Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001

    Directory of Open Access Journals (Sweden)

    Lianbi Li

    2017-05-01

    Full Text Available The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001 Si-face by chemical vapor deposition. TEM characterizations of the p/n-Si DSL confirmed the epitaxial growth of the Si films with preferred orientation and the misfit dislocations with a Burgers vector of 1/3 <21-1> at the p-Si/n-Si interface. The device had an obvious rectifying behavior, and the turn-on voltage was about 1.2 V. Under the visible illumination of 0.6 W/cm2, the device demonstrated a significant photoelectric response with a photocurrent density of 2.1 mA/cm2. Visible light operation of the Si-DSL/6H-SiC heterostructure was realized for the first time.

  16. Electrical resistivity and thermal conductivity of SiC/Si ecoceramics prepared from sapele wood biocarbon

    Science.gov (United States)

    Parfen'eva, L. S.; Orlova, T. S.; Smirnov, B. I.; Smirnov, I. A.; Misiorek, H.; Mucha, J.; Jezowski, A.; Gutierrez-Pardo, A.; Ramirez-Rico, J.

    2012-10-01

    Samples of β-SiC/Si ecoceramics with a silicon concentration of ˜21 vol % have been prepared using a series of consecutive procedures (carbonization of sapele wood biocarbon, synthesis of high-porosity biocarbon with channel-type pores, infiltration of molten silicon into empty channels of the biocarbon, formation of β-SiC, and retention of residual silicon in channels of β-SiC). The electrical resistivity ρ and thermal conductivity κ of the β-SiC/Si ecoceramic samples have been measured in the temperature range 5-300 K. The values of ρ{Si/chan}( T) and κ{Si/chan}( T) have been determined for silicon Sichan located in β-SiC channels of the synthesized β-SiC/Si ecoceramics. Based on the performed analysis of the obtained results, the concentration of charge carriers (holes) in Sichan has been estimated as p ˜ 1019 cm-3. The factors that can be responsible for such a high value of p have been discussed. The prospects for practical application of β-SiC/Si ecoceramics have been considered.

  17. Polarized luminescence of nc-Si-SiO x nanostructures on silicon substrates with patterned surface

    Science.gov (United States)

    Michailovska, Katerina; Mynko, Viktor; Indutnyi, Ivan; Shepeliavyi, Petro

    2018-05-01

    Polarization characteristics and spectra of photoluminescence (PL) of nc-Si-SiO x structures formed on the patterned and plane c-Si substrates are studied. The interference lithography with vacuum chalcogenide photoresist and anisotropic wet etching are used to form a periodic relief (diffraction grating) on the surface of the substrates. The studied nc-Si-SiO x structures were produced by oblique-angle deposition of Si monoxide in vacuum and the subsequent high-temperature annealing. The linear polarization memory (PM) effect in PL of studied structure on plane substrate is manifested only after the treatment of the structures in HF and is explained by the presence of elongated Si nanoparticles in the SiO x nanocolumns. But the PL output from the nc-Si-SiO x structure on the patterned substrate depends on how this radiation is polarized with respect to the grating grooves and is much less dependent on the polarization of the exciting light. The measured reflection spectra of nc-Si-SiO x structure on the patterned c-Si substrate confirmed the influence of pattern on the extraction of polarized PL.

  18. Effect of Silicon on Activity Coefficients of Platinum in Liquid Fe-Si, With Application to Core Formation

    Science.gov (United States)

    Righter, K.; Pando, K.; Danielson, L. R.; Humayun, M.

    2017-01-01

    Earth's core contains approximately 10% of a light element that is likely a combination of S, C, Si, and O, with Si possibly being the most abundant light element. Si dissolved into Fe liquids can have a large effect on the magnitude of the activity coefficient of siderophile elements (SE) in Fe liquids, and thus the partitioning behavior of those elements between core and mantle. The effect of Si can be small such as for Ni and Co, or large such as for Mo, Ge, Sb, As. The effect of Si on many siderophile elements is unknown yet could be an important, and as yet unquantified, influence on the core-mantle partitioning of SE. Here we report new experiments designed to quantify the effect of Si on the partitioning of Pt (with Re and Ru in progress or planned) between metal and silicate melt. The results will be applied to Earth, for which we have excellent constraints on the mantle Pt concentrations.

  19. Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process

    Science.gov (United States)

    Yu, Yeon-Tae; Naik, Gautam Kumar; Lim, Young-Bin; Yoon, Jeong-Mo

    2017-11-01

    The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder was investigated. The mixing ratio of Si-SiC composite nanoparticle to micron-sized SiC was optimized to 10 wt%. Vicker's hardness and relative density was increased with increasing sintering temperature and holding time. The relative density and Vicker's hardness was further increased by reaction bonding using additional activated carbon to the mixture of micron-sized SiC and nano-sized Si-SiC. The maximum relative density (97.1%) and Vicker's hardness (31.4 GPa) were recorded at 1800 °C sintering temperature for 1 min holding time, when 0.2 wt% additional activated carbon was added to the mixture of SiC/Si-SiC.

  20. Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process.

    Science.gov (United States)

    Yu, Yeon-Tae; Naik, Gautam Kumar; Lim, Young-Bin; Yoon, Jeong-Mo

    2017-11-25

    The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder was investigated. The mixing ratio of Si-SiC composite nanoparticle to micron-sized SiC was optimized to 10 wt%. Vicker's hardness and relative density was increased with increasing sintering temperature and holding time. The relative density and Vicker's hardness was further increased by reaction bonding using additional activated carbon to the mixture of micron-sized SiC and nano-sized Si-SiC. The maximum relative density (97.1%) and Vicker's hardness (31.4 GPa) were recorded at 1800 °C sintering temperature for 1 min holding time, when 0.2 wt% additional activated carbon was added to the mixture of SiC/Si-SiC.

  1. Microstructural and mechanical behaviors of nano-SiC-reinforced AA7075-O FSW joints prepared through two passes

    Energy Technology Data Exchange (ETDEWEB)

    Bahrami, Mohsen, E-mail: Mohsen.bahrami@aut.ac.ir [Faculty of Mining and Materials Engineering, Amirkabir University of Technology (AUT), Hafez Aveenue, Tehran (Iran, Islamic Republic of); Farahmand Nikoo, Mohsen [Faculty of Mining and Materials Engineering, Amirkabir University of Technology (AUT), Hafez Aveenue, Tehran (Iran, Islamic Republic of); Besharati Givi, Mohammad Kazem [Department of Mechanical Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)

    2015-02-25

    In this paper, a threaded tapered pin tool was employed to fabricate a 2-pass friction stir welded (FSWed) joint. To investigate the benefits of nano-sized SiC particles on microstructural and mechanical properties of the joint, the experiment was repeated while SiC particles had been inserted along the joint line. In another joint, a square pin tool was applied in the second pass to evaluate the effectiveness of switching pin geometry between passes on the aforementioned properties. Microstructural features including grain size, second phase particles and reinforcement distribution were examined via optical and scanning electron microscopy (SEM) techniques. In addition to satisfactory connections between SiC particles and the matrix, the most homogenous particles distribution was observed in the specimen FSWed with both pin tools. This observation was further supported by atomic force microscopy (AFM) examination. Additionally, the foregoing joint demonstrated the maximum tensile strength which was synonymous with its smallest grain size. During tensile testing, SiC-free joint and SiC-reinforced ones fractured from stir zone (SZ) and base metal, respectively. Moreover, SiC-free joint showed necking phenomenon. SEM results showed that the SiC-reinforced specimens possessed ductile fracture morphologies. On the other hand, SiC-free specimen showed a quasi-cleavage fracture mode confirming its moderate percent elongation. In the meantime, SiC-reinforced specimens exhibited superior hardness level to SiC-free specimen.

  2. The Evaluation of the Corrosion Resistance of the Al-Si Alloys Antimony Alloyed

    Directory of Open Access Journals (Sweden)

    Svobodova J.

    2014-06-01

    Full Text Available This paper deals with the evaluation of the corrosion resistance of the Al-Si alloys alloyed with the different amount of antimony. Specifically it goes about the alloy AlSi7Mg0,3 which is antimony alloyed in the concentrations 0; 0,001; 0,005; 0,01 a 0,05 wt. % of antimony. The introduction of the paper is dedicated to the theory of the aluminium alloys corrosion resistance, testing and evaluation of the corrosion resistance. The influence of the antimony to the Al-Si alloys properties is described further in the introduction. The experimental part describes the experimental samples which were prepared for the experiment and further they were exposed to the loading in the atmospheric conditions for a period of the 3 months. The experimental samples were evaluated macroscopically and microscopically. The results of the experiment were documented and the conclusions in terms of the antimony impact to the corrosion resistance of the Al-Si alloy were concluded. There was compared the corrosion resistance of the Al-Si alloy antimony alloyed (with the different antimony content with the results of the Al-Si alloy without the alloying after the corrosion load in the atmospheric conditions in the experiment.

  3. Diffusion Mechanisms and Lattice Locations of Thermal-Equilibrium Defects in Si-Ge Alloys

    CERN Multimedia

    Lyutovich, K; Touboltsev, V; Laitinen, P O; Strohm, A

    2002-01-01

    It is generally accepted that Ge and Si differ considerably with respect to intrinsic-point-defect-mediated diffusion. In Ge, the native point defects dominating under thermal-equilibium conditions at all solid-state temperatures accessible in diffusion experiments are vacancies, and therefore Ge self-diffusion is vacancy-controlled. In Si, by contrast, self-interstitials and vacancies co-exist in thermal equilibrium. Whereas in the most thoroughly investigated temperature regime above about 1000$^\\circ$C Si self-diffusion is self-interstitial-controlled, it is vacancy-controlled at lower temperatures. According to the scenario displayed above, self-diffusion in Si-Ge alloys is expected to change from an interstitialcy mechanism on the Si side to a vacancy mechanism on the Ge side. Therefore, $^{71}$Ge self-diffusion experiments in Si$_{1- \\it y}$Ge$_{\\it y}$ as a function of composition Y are highly interesting. In a first series of experiments the diffusion of Ge in 0.4 to 10 $\\mu$m thick, relaxed, low-disl...

  4. siRNA and innate immunity.

    Science.gov (United States)

    Robbins, Marjorie; Judge, Adam; MacLachlan, Ian

    2009-06-01

    Canonical small interfering RNA (siRNA) duplexes are potent activators of the mammalian innate immune system. The induction of innate immunity by siRNA is dependent on siRNA structure and sequence, method of delivery, and cell type. Synthetic siRNA in delivery vehicles that facilitate cellular uptake can induce high levels of inflammatory cytokines and interferons after systemic administration in mammals and in primary human blood cell cultures. This activation is predominantly mediated by immune cells, normally via a Toll-like receptor (TLR) pathway. The siRNA sequence dependency of these pathways varies with the type and location of the TLR involved. Alternatively nonimmune cell activation may also occur, typically resulting from siRNA interaction with cytoplasmic RNA sensors such as RIG1. As immune activation by siRNA-based drugs represents an undesirable side effect due to the considerable toxicities associated with excessive cytokine release in humans, understanding and abrogating this activity will be a critical component in the development of safe and effective therapeutics. This review describes the intracellular mechanisms of innate immune activation by siRNA, the design of appropriate sequences and chemical modification approaches, and suitable experimental methods for studying their effects, with a view toward reducing siRNA-mediated off-target effects.

  5. Occupied and unoccupied electronic states on vicinal Si(111) surfaces decorated with monoatomic gold chains; Besetzte und unbesetzte elektronische Zustaende vizinaler Si(111)-Oberflaechen mit atomaren Goldketten

    Energy Technology Data Exchange (ETDEWEB)

    Biedermann, Kerstin

    2012-07-12

    -dimensional gold chains, spin-polarized silicon atoms at the step edges, which are coupled anti-ferromagnetically. This leads to the occurrence of intrinsic magnetism on a non-magnetic material. The related strongly localized states could be detected experimentally in both the occupied and the unoccupied part of the band structure for the very first time and therefore their existence is confirmed. All these surfaces resemble each other with respect to the n=1 image-potential resonance, which is excited from initial states of even and odd parity. The negative dispersion of this state in the direction along the chains with an effective mass in the range of the mass of the light-hole valence-band maximum is particularly noteworthy. In conjunction with the photon-energy dependence this leads to the assumption that the dispersion of the image-potential resonances is dominated by the initial states from which they are excited. Their lifetimes of 10 fs to 20 fs resemble the lifetime of the image-potential resonance on Si(001). A further analogy regarding the dynamics of the Si(111)-Au surfaces is the occurrence of intensity for UV-pump-IR-probe processes in a range of one to one and a half electron volts below the vacuum energy. Within this range there is no clear evidence for intermediate states, to which lifetimes - decreasing with their distance from the vacuum level - of several tens of femtoseconds could be attributed. For this phenomenon no final explanation could be found. The most interesting part of the complex carrier dynamics on the Si(111)-Au surfaces, however, takes place inside the bulk band gap of silicon. On all these surfaces there is at least one strongly localized surface state with a lifetime between 80 fs and 150 fs inside the bulk band gap. This intermediate state is not only populated by an IR-pump process, but also filled via surface recombination. This additional population takes place on a timescale of several hundreds of femtoseconds or even one picosecond

  6. Thermo-sensitive nanoparticles for triggered release of siRNA.

    Science.gov (United States)

    Yang, Zheng; Cheng, Qiang; Jiang, Qian; Deng, Liandong; Liang, Zicai; Dong, Anjie

    2015-01-01

    Efficient delivery of small interfering RNA (siRNA) is crucially required for cancer gene therapy. Herein, a thermo-sensitive copolymer with a simple structure, poly (ethylene glycol) methyl ether acrylate-b-poly (N-isopropylacrylamide) (mPEG-b-PNIPAM) was developed. A novel kind of thermo-sensitive nanoparticles (DENPs) was constructed for the cold-shock triggered release of siRNA by double emulsion-solvent evaporation method using mPEG-b-PNIPAM and a cationic lipid, 3β [N-(N', N'-dimethylaminoethane)-carbamoyl] cholesterol [DC-Chol]. DENPs were observed by transmission electron microscopy and dynamical light scattering before and after 'cold shock' treatment. The encapsulation efficiency (EE) of siRNA in DENPs, which was measured by fluorescence spectrophotometer was 96.8% while it was significantly reduced to be 23.2% when DC-Chol was absent. DENPs/siRNA NPs exhibited a thermo-sensitive siRNA release character that the cumulatively released amount of siRNA from cold shock was approximately 2.2 folds higher after 7 days. In vitro luciferase silencing experiments indicated that DENPs showed potent gene silencing efficacy in HeLa-Luc cells (HeLa cells steadily expressed luciferase), which was further enhanced by a cold shock. Furthermore, MTT assay showed that cell viability with DENPs/siRNA up to 200 nM remained above 80%. We also observed that most of siRNA was accumulated in kidney mediated by DENPs instead of liver and spleen in vivo experiments. Thus, DENPs as a cold shock responsive quick release model for siRNA or hydrophilic macromolecules delivery provide a new way to nanocarrier design and clinic therapy.

  7. Sum Frequency Generation Vibrational Spectroscopy of 1,3-Butadiene Hydrogenation on 4 nm Pt@SiO 2 , Pd@SiO 2 , and Rh@SiO 2 Core–Shell Catalysts

    KAUST Repository

    Krier, James M.

    2015-01-14

    © 2014 American Chemical Society. 1,3-Butadiene (1,3-BD) hydrogenation was performed on 4 nm Pt, Pd, and Rh nanoparticles (NPs) encapsulated in SiO2 shells at 20, 60, and 100 °C. The core-shells were grown around polyvinylpyrrolidone (PVP) coated NPs (Stöber encapsulation) prepared by colloidal synthesis. Sum frequency generation (SFG) vibrational spectroscopy was performed to correlate surface intermediates observed in situ with reaction selectivity. It is shown that calcination is effective in removing PVP, and the SFG signal can be generated from the metal surface. Using SFG, it is possible to compare the surface vibrational spectrum of Pt@SiO2 (1,3-BD is hydrogenated through multiple paths and produces butane, 1-butene, and cis/trans-2-butene) to Pd@SiO2 (1,3-BD favors one path and produces 1-butene and cis/trans-2-butene). In contrast to Pt@SiO2 and Pd@SiO2, SFG and kinetic experiments of Rh@SiO2 show a permanent accumulation of organic material.

  8. Thermogravimetric and microscopic analysis of SiC/SiC materials with advanced interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Windisch, C.F. Jr.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States); Snead, L.L. [Oak Ridge National Lab., TN (United States)

    1997-04-01

    The chemical stability of SiC/SiC composites with fiber/matrix interfaces consisting of multilayers of SiC/SiC and porous SiC have been evaluated using a thermal gravimetric analyzer (TGA). Previous evaluations of SiC/SiC composites with carbon interfacial layers demonstrated the layers are not chemically stable at goal use temperatures of 800-1100{degrees}C and O{sub 2} concentrations greater than about 1 ppm. No measureable mass change was observed for multilayer and porous SiC interfaces at 800-1100{degrees}C and O{sub 2} concentrations of 100 ppm to air; however, the total amount of oxidizable carbon is on the order of the sensitivity of the TGA. Further studies are in progress to evaluate the stability of these materials.

  9. Characterization of SiC–SiC composites for accident tolerant fuel cladding

    Energy Technology Data Exchange (ETDEWEB)

    Deck, C.P., E-mail: Christian.Deck@ga.com; Jacobsen, G.M.; Sheeder, J.; Gutierrez, O.; Zhang, J.; Stone, J.; Khalifa, H.E.; Back, C.A.

    2015-11-15

    Silicon carbide (SiC) is being investigated for accident tolerant fuel cladding applications due to its high temperature strength, exceptional stability under irradiation, and reduced oxidation compared to Zircaloy under accident conditions. An engineered cladding design combining monolithic SiC and SiC–SiC composite layers could offer a tough, hermetic structure to provide improved performance and safety, with a failure rate comparable to current Zircaloy cladding. Modeling and design efforts require a thorough understanding of the properties and structure of SiC-based cladding. Furthermore, both fabrication and characterization of long, thin-walled SiC–SiC tubes to meet application requirements are challenging. In this work, mechanical and thermal properties of unirradiated, as-fabricated SiC-based cladding structures were measured, and permeability and dimensional control were assessed. In order to account for the tubular geometry of the cladding designs, development and modification of several characterization methods were required.

  10. Mechanism of Si intercalation in defective graphene on SiC

    KAUST Repository

    Kaloni, Thaneshwor P.; Cheng, Yingchun; Schwingenschlö gl, Udo; Upadhyay Kahaly, M.

    2012-01-01

    Previously reported experimental findings on Si-intercalated graphene on SiC(0001) seem to indicate the possibility of an intercalation process based on the migration of the intercalant through atomic defects in the graphene sheet. We employ density

  11. Formation mechanism of SiC in C-Si system by ion irradiation

    International Nuclear Information System (INIS)

    Hishita, Shunichi; Aizawa, Takashi; Suehara, Shigeru; Haneda, Hajime

    2003-01-01

    The irradiation effects of 2 MeV He + , Ne + , and Ar + ions on the film structure of the C-Si system were investigated with RHEED and XPS. The ion dose dependence of the SiC formation was kinetically analyzed. The SiC formation at moderate temperature was achieved by 2 MeV ion irradiation when the thickness of the initial carbon films was appropriate. The evolution process of the SiC film thickness consisted of the 3 stages. The first stage was the steep increase of the SiC, and was governed by the inelastic collision. The second was the gentle increase of the SiC, and was governed by the diffusion. The last was the decrease of the SiC, and was caused by the sputtering. The formation mechanism of the SiC was discussed. (author)

  12. Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111/Si(111

    Directory of Open Access Journals (Sweden)

    Abe Shunsuke

    2010-01-01

    Full Text Available Abstract Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111 thin films on Si(111 has been studied. The change in the surface composition during graphene epitaxy is monitored by in situ temperature-programmed desorption spectroscopy using deuterium as a probe (D2-TPD and complementarily by ex situ Raman and C1s core-level spectroscopies. The surface of the 3C-SiC(111/Si(111 is Si-terminated before the graphitization, and it becomes C-terminated via the formation of C-rich (6√3 × 6√3R30° reconstruction as the graphitization proceeds, in a similar manner as the epitaxy of graphene on Si-terminated 6H-SiC(0001 proceeds.

  13. Dielectric Properties of SiCf/PyC/SiC Composites After Oxidation

    Institute of Scientific and Technical Information of China (English)

    SONG Huihui; ZHOU Wancheng; LUO Fa; QING Yuchang; CHEN Malin; LI Zhimin

    2016-01-01

    In this paper, the SiC fiber-reinforced SiC matrix composites with a 0.15mm thick pyrocarbon interphase (notedas SiCf/PyC/SiC) were prepared by chemical vapor infiltration (CVI). The SiCf/PyC/SiC were oxidized in air at 950℃ for 50h. The dielectric properties after this high temperature oxidation were investigated in X-band from room temperature (RT) to 700℃. Results suggested that:e' of the SiCf/PyC/SiC after oxidation increased at first then de-creased with temperature elevating;e" increased with temperature raising in the temperature range studied.

  14. Fermi surfaces of YRu2Si2 and LaRu2Si2

    International Nuclear Information System (INIS)

    Settai, R.; Ikezawa, H.; Toshima, H.; Takashita, M.; Ebihara, T.; Sugawara, H.; Kimura, T.; Motoki, K.; Onuki, Y.

    1995-01-01

    We have measured the de Haas-van Alphen effect of YRu 2 Si 2 and LaRu 2 Si 2 to clarify the Fermi surfaces and cyclotron masses. Main hole-Fermi surfaces of both compounds with a distorted ellipsoid shape are similar, occupying about half of the Brillouin zone. The small hole-Fermi surfaces with the shape of a rugby ball are three in number for LaRu 2 Si 2 , and one for YRu 2 Si 2 . An electron-Fermi surface consists of a doughnut like shape for LaRu 2 Si 2 , while a cylinder along the [001] direction and a multiply-connected shape exist for YRu 2 Si 2 . The cyclotron masses of YRu 2 Si 2 are a little larger than those of LaRu 2 Si 2 . ((orig.))

  15. A sensitive optical sensor based on DNA-labelled Si@SiO2 core ...

    Indian Academy of Sciences (India)

    2017-10-31

    Oct 31, 2017 ... Si@SiO2 core–shell nanoparticles were proposed for the development of fluorescent mercury ... orophores, due to their unique optical properties, such as .... were made by evaporating one drop of the sample solution on.

  16. Ni-Si oxide as an inducing crystallization source for making poly-Si

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Zhiguo; Liu, Zhaojun; Li, Juan; Wu, Chunya; Xiong, Shaozhen [Institute of Photo-electronics, Nankai University, Tianjin (China); Zhao, Shuyun; Wong, Man; Kwok, Hoi Sing [Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong (China)

    2010-04-15

    Nickel silicon oxide mixture was sputtered on a-Si with Ni-Si alloy target with Ni:Si weight ratio of 1:9 and used as a new inducing source for metal induced lateral crystallization (MILC). The characteristics of the resulted poly-Si materials induced by Ni-Si oxide with different thickness were nearly the same. This means the metal induced crystallization with this new inducing source has wide processing tolerance to make MILC poly-Si. Besides, it reduced the residual Ni content in the resulted poly-Si film. The transfer characteristic curve of poly-Si TFT and a TFT-OLED display demo made with this kind of new inducing source were also presented in this paper. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Rod-like β-FeSi2 phase grown on Si (111) substrate

    International Nuclear Information System (INIS)

    Han Ming; Tanaka, Miyoko; Takeguchi, Masaki; Furuya, Kazuo

    2004-01-01

    Pure Fe with coverage of 0.5-2.0 nm was deposited on Si (111) 7x7 surfaces by reactive deposition epitaxy (RDE) in an integrated ultrahigh vacuum (UHV) system. Transmission electron microscopy (TEM) confirmed that the as-deposited epitaxial phase exhibits rod-like and equilateral triangular morphology. The as-deposited phase was identified as c-FeSi 2 by electron diffraction and high-resolution transmission electron microscopy. It was found that there exists lattice distortion in epitaxial c-FeSi 2 phase. Upon annealing at 1073 K, the metastable c-FeSi 2 transforms into equilibrium β-FeSi 2 phase, the latter inherits completely the morphology of c-FeSi 2 phase. Based on RDE and subsequent annealing, a new fabrication technique to grow rod-like semiconducting β-FeSi 2 on a Si substrate has been proposed in the present work

  18. Development of SiC/SiC composite for fusion application

    International Nuclear Information System (INIS)

    Kohyama, A.; Katoh, Y.; Snead, L.L.; Jones, R.H.

    2001-01-01

    The recent efforts to develop SiC/SiC composite materials for fusion application under the collaboration with Japan and the USA are provided, where material performance with and without radiation damage has been greatly improved. One of the accomplishments is development of the high performance reaction sintering process. Mechanical and thermal conductivity are improved extensively by process modification and optimization with inexpensive fabrication process. The major efforts to make SiC matrix by CVI, PIP and RS methods are introduced together with the representing baseline properties. The resent results on mechanical properties of SiC/SiC under neutron irradiation are quite positive. The composites with new SiC fibers, Hi-Nicalon Type-S, did not exhibit mechanical property degradation up to 10 dpa. Based on the materials data recently obtained, a very preliminary design window is provided and the future prospects of SiC/SiC technology integration is provided. (author)

  19. Melting relations in the MgO-MgSiO3 system up to 70 GPa

    Science.gov (United States)

    Ohnishi, Satoka; Kuwayama, Yasuhiro; Inoue, Toru

    2017-06-01

    Melting experiments in a binary system MgO-MgSiO3 were performed up to 70 GPa using a CO2 laser heated diamond anvil cell. The quenched samples were polished and analyzed by a dualbeam focused ion beam (FIB) and a field emission scanning electron microscope (FE-SEM), respectively. The liquidus phase and the eutectic composition were determined on the basis of textual and chemical analyses of sample cross sections. Our experimental results show that the eutectic composition is the Si/Mg molar ratio of 0.76 at 35 GPa and it decreases with increasing pressure. Above 45 GPa, it becomes relatively constant at about 0.64-0.65 Si/Mg molar ratio. Using our experimental data collected at a wide pressure range up to 70 GPa together with previous experimental data, we have constructed a thermodynamic model of the eutectic composition of the MgO-MgSiO3 system. The eutectic composition extrapolated to the pressure and temperature conditions at the base of the mantle is about 0.64 Si/Mg molar ratio. The modeled eutectic composition is quite consistent with a previous prediction from ab initio calculations (de Koker et al. in Earth Planet Sci Lett 361:58-63, 2013), suggesting that the simple assumption of a non-ideal regular solution model can well describe the melting relation of the MgO-MgSiO3 system at high pressure. Our results show that the liquidus phase changes from MgO-periclase to MgSiO3-bridgmanite at 35 GPa for the simplified pyrolite composition ( 0.7 Si/Mg molar ratio), while MgSiO3-bridgmanite is the liquidus phase at the entire lower mantle conditions for the chondritic composition ( 0.84 Si/Mg molar ratio).

  20. Investigation of hydrogen and chlorine at the SiO2/Si interface

    International Nuclear Information System (INIS)

    Tsong, I.S.T.; Monkowski, M.D.; Monkowski, J.R.; Miller, P.D.; Moak, C.D.; Appleton, B.R.; Wintenberg, A.L.

    1980-01-01

    Silicon oxides thermally grown in H 2 O, O 2 , HCl/O 2 and Cl 2 /O 2 ambients were analyzed, via 1 H( 19 F,αγ) 16 O nuclear reaction and SIMS, for the presence of hydrogen. In addition, those oxides grown in HCl/O 2 and Cl 2 /O 2 ambients were analyzed with SIMS for the presence of chlorine. The SIMS data show that the hydrogen levels in these oxides were below the limit of detection for nuclear reaction experiments. The 35 Cl + depth-profiles show that chlorine is enriched at the SiO 2 interface for the HCl/O 2 grown oxides while it is more evenly distributed in oxide bulk in the Cl 2 /O 2 grown samples

  1. Effect of irradiation on thermal expansion of SiCf/SiC composites

    International Nuclear Information System (INIS)

    Senor, D.J.; Trimble, D.J.; Woods, J.J.

    1996-06-01

    Linear thermal expansion was measured on five different SiC-fiber-reinforced/SiC-matrix (SiC f /SiC) composite types in the unirradiated and irradiated conditions. Two matrices were studied in combination with Nicalon CG reinforcement and a 150 nm PyC fiber/matrix interface: chemical vapor infiltrated (CVI) SiC and liquid-phase polymer impregnated precursor (PIP) SiC. Composites of PIP SiC with Tyranno and HPZ fiber reinforcement and a 150 nm PyC interface were also tested, as were PIP SiC composites with Nicalon CG reinforcement and a 150 nm BN fiber/matrix interface. The irradiation was conducted in the Experimental Breeder Reactor-II at a nominal temperature of 1,000 C to doses of either 33 or 43 dpa-SiC. Irradiation caused complete fiber/matrix debonding in the CVI SiC composites due to a dimensional stability mismatch between fiber and matrix, while the PIP SiC composites partially retained their fiber/matrix interface after irradiation. However, the thermal expansion of all the materials tested was found to be primarily dependent on the matrix and independent of either the fiber or the fiber/matrix interface. Further, irradiation had no significant effect on thermal expansion for either the CVI SiC or PIP SiC composites. In general, the thermal expansion of the CVI SiC composites exceeded that of the PIP SiC composites, particularly at elevated temperatures, but the expansion of both matrix types was less than chemical vapor deposited (CVD) β-SiC at all temperatures

  2. Hybrid Integrated Si/SiN Platforms for Wideband Optical Processing

    Science.gov (United States)

    2017-05-08

    annealing process, makes the process prone to dopant redistribution, that hinderers the SiN deposition after full Si device fabrication. To resolve...with 220 nm of crystalline Si. In parallel, a Si die goes through a wet oxidation process to grow 5 μm of thermal oxide. In the next step, 400 nm of... annealing methods. As a figure of merit in hydrophilic bonding, we monitored the surface roughness and bonding strength of a thin oxide layer to

  3. Formation of ferromagnetic interface between β-FeSi2 and Si(111) substrate

    International Nuclear Information System (INIS)

    Hattori, Azusa N.; Hattori, Ken; Kodama, Kenji; Hosoito, Nobuyoshi; Daimon, Hiroshi

    2007-01-01

    Epitaxial β-FeSi 2 thin films were grown on Si(111)7x7 clean surfaces by solid phase epitaxy in ultrahigh vacuum: iron deposition at low temperature and subsequent annealing. We found that a ferromagnetic interface layer of iron-rich silicides forms between a β-FeSi 2 surface layer and a Si(111) substrate spontaneously from transmission electron microscopy observations and magnetization measurements

  4. Minimum bar size for flexure testing of irradiated SiC/SiC composite

    International Nuclear Information System (INIS)

    Youngblood, G.E.; Jones, R.H.

    1998-01-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23-24, 1997. The minimum bar size for 4-point flexure testing of SiC/SiC composite recommended by PNNL for irradiation effects studies is 30 x 6 x 2 mm 3 with a span-to-depth ratio of 10/1

  5. Passivation of surface-nanostructured f-SiC and porous SiC

    DEFF Research Database (Denmark)

    Ou, Haiyan; Lu, Weifang; Ou, Yiyu

    The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper.......The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper....

  6. The application of Cu/SiO2 catalytic system in chemical mechanical planarization based on the stability of SiO2 sol

    International Nuclear Information System (INIS)

    Li Yan; Liu Yuling; Wang Aochen; Yang Zhixin; Sun Mingbin; Cheng Chuan; Zhang Yufeng; Zhang Nannan

    2014-01-01

    through the removal rate of copper film, infrared spectrum and AFM diagrams in different pH conditions. Finally it is concluded that the SiO 2 sol used in the experiment possesses stable performance; in the CMP process it is directly involved in the chemical reaction by creating the intermediate of the catalytic reaction (CuSiO 3 ) whose yield is proportional to the pH value, which accelerates the removal of copper film. (semiconductor technology)

  7. Excitation and deexcitation of the Si-H stretching mode in a Si:H with picosecond free electron laser pulses

    International Nuclear Information System (INIS)

    Xu, Z.; Fauchet, M.; Rella, C.W.

    1995-01-01

    Hydrogen in amorphous and crystalline silicon has been the topic of intense theoretical and experimental investigations for more than one decade. To better understand how the Si-H bonds interact with the Si matrix and how they can be broken, it would be useful to excite selectively these bonds and monitor the energy flow from the Si-H bonds into the bulk Si modes. One attractive way of exciting the Si-H modes selectively is with an infrared laser tuned to a Si-H vibrational mode. Unfortunately, up to now, this type of experiment had not been possible because of the lack of a laser producing intense, ultrashort pulses that are tunable in the mid infrared. In this presentation, we report the first measurement where a 1 picosecond long laser pulse was used to excite the Si-H stretching modes near 2000 cm -1 and another identical laser pulse was used to measure the deexcitation from that specific vibrational mode. The laser was the Stanford free electron laser generating ∼1 ps-long pulses, tunable in the 5 μm region and focussed to an intensity of ∼1 GW/cm 2 . The pump-probe measurements were performed in transmission at room temperature on several 2 μm thick a-Si:H films deposited on c-Si. Samples with predominant Si-H 1 modes, predominant Si-H n>1 modes and with a mixture of modes were prepared. The laser was tuned on resonance with either of these modes. Immediately after excitation, we observe a bleaching of the infrared absorption, which can be attributed to excitation of the Si-H mode. Beaching is expected since, as a result of anharmonicity, the detuning between the (E 3 - E 2 ) resonance and the (E 2 - E 1 ) resonance is larger than the laser bandwidth. Note that despite the anharmonicity, it should be possible to climb the vibrational ladder due to power broadening

  8. Time Of Flight Detectors: From phototubes to SiPM

    International Nuclear Information System (INIS)

    Laurenti, G.; Levi, G.; Foschi, E.; Guandalini, C.; Quadrani, L.; Sbarra, C.; Zuffa, M.

    2008-01-01

    A sample of Silicon Photomultipliers was tested because they looked promising for future space missions: low consumption, low weight, resistance to radiation damage and insensitivity to magnetic fields. They have been studied in laboratory by means of the same characterization methods adopted to calibrate the fine mesh photomultipliers used by the Time Of Flight of the AMS-02 experiment. A detailed simulation was made to reproduce the SiPM response to the various experimental conditions. A possible counter design has been studied with front end electronics card equipped with SiPMs and Peltier cell for thermoregulation. A proper simulation based on COMSOL Multiphysics package reproduces quite well the Peltier cell nominal cooling capability

  9. Thermodynamic study of the U-Si system

    International Nuclear Information System (INIS)

    Berche, A.; Rado, C.; Rapaud, O.; Gueneau, C.; Rogez, J.

    2009-01-01

    The uranium-silicon phase diagram is a key system to predict the possible interaction between the fuel kernel (U, Pu)C and the inert matrix SiC considered for the gas-cooled fast reactor systems. The experimental data from the literature on the uranium-silicon system are critically reviewed. Differential Thermal Analysis experiments are carried out to measure the temperatures of the phase transitions in the composition range 6-46% at Si. The experimental results are compared to the available data of the literature. The microstructure of the samples has been analysed using scanning electron microscopy. In view of the analyses, some solidification paths are proposed. Finally, the present experimental results and the available data of the literature have been used to perform a thermodynamic modelling of the uranium-silicon system using the CALPHAD method.

  10. Ion beam mixing of marker layers in Al and Si

    International Nuclear Information System (INIS)

    Mantl, S.; Rehn, L.E.; Averback, R.S.; Thompson, L.J. Jr.

    1984-07-01

    Ion beam mixing experiments on thin Pt, Au, and Ni markers in Al and Si have performed at 17, 85, and 300 K. After irradiation with 300-keV Ar ions the broadening and relative shifts of the markers have been determined by RBS measurements. The marker broadenings are more pronounced in Si than in Al; in both matrices the broadenings decrease in the following order: Au, Pt, and Ni. No dependence of mixing on irradiation temperature was observed between 17 and 300 K. The shifts of the heavy Au and Pt markers relative to the Ni markers are approximately equal to the experimental accuracy. However, a shift of the Ni marker toward the surface relative to the heavier Au and Pt markers was consistently observed. 13 references, 2 figures

  11. Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

    NARCIS (Netherlands)

    Dobrovolskiy, S.; Yakshin, A. E.; Tichelaar, F. D.; Verhoeven, J.; E. Louis,; F. Bijkerk,

    2010-01-01

    Si/SiC multilayer systems for XUV reflection optics with a periodicity of 10-20 nm were produced by sequential deposition of Si and implantation of 1 key CHx+ ions. Only about 3% of the implanted carbon was transferred into the SIC, with a thin, 0.5-1 nm, buried SIC layer being formed. We

  12. Thermal Stability of siRNA Modulates Aptamer- conjugated siRNA Inhibition

    Directory of Open Access Journals (Sweden)

    Alexey Berezhnoy

    2012-01-01

    Full Text Available Oligonucleotide aptamer-mediated in vivo cell targeting of small interfering RNAs (siRNAs is emerging as a useful approach to enhance the efficacy and reduce the adverse effects resulting from siRNA-mediated genetic interference. A current main impediment in aptamer-mediated siRNA targeting is that the activity of the siRNA is often compromised when conjugated to an aptamer, often requiring labor intensive and time consuming design and testing of multiple configurations to identify a conjugate in which the siRNA activity has not been significantly reduced. Here, we show that the thermal stability of the siRNA is an important parameter of siRNA activity in its conjugated form, and that siRNAs with lower melting temperature (Tm are not or are minimally affected when conjugated to the 3′ end of 2′F-pyrimidine-modified aptamers. In addition, the configuration of the aptamer-siRNA conjugate retains activity comparable with the free siRNA duplex when the passenger strand is co-transcribed with the aptamer and 3′ overhangs on the passenger strand are removed. The approach described in this paper significantly reduces the time and effort necessary to screening siRNA sequences that retain biological activity upon aptamer conjugation, facilitating the process of identifying candidate aptamer-siRNA conjugates suitable for in vivo testing.

  13. siRNAmod: A database of experimentally validated chemically modified siRNAs.

    Science.gov (United States)

    Dar, Showkat Ahmad; Thakur, Anamika; Qureshi, Abid; Kumar, Manoj

    2016-01-28

    Small interfering RNA (siRNA) technology has vast potential for functional genomics and development of therapeutics. However, it faces many obstacles predominantly instability of siRNAs due to nuclease digestion and subsequently biologically short half-life. Chemical modifications in siRNAs provide means to overcome these shortcomings and improve their stability and potency. Despite enormous utility bioinformatics resource of these chemically modified siRNAs (cm-siRNAs) is lacking. Therefore, we have developed siRNAmod, a specialized databank for chemically modified siRNAs. Currently, our repository contains a total of 4894 chemically modified-siRNA sequences, comprising 128 unique chemical modifications on different positions with various permutations and combinations. It incorporates important information on siRNA sequence, chemical modification, their number and respective position, structure, simplified molecular input line entry system canonical (SMILES), efficacy of modified siRNA, target gene, cell line, experimental methods, reference etc. It is developed and hosted using Linux Apache MySQL PHP (LAMP) software bundle. Standard user-friendly browse, search facility and analysis tools are also integrated. It would assist in understanding the effect of chemical modifications and further development of stable and efficacious siRNAs for research as well as therapeutics. siRNAmod is freely available at: http://crdd.osdd.net/servers/sirnamod.

  14. Tunable Synthesis of SiC/SiO2 Heterojunctions via Temperature Modulation

    Directory of Open Access Journals (Sweden)

    Wei Li

    2018-05-01

    Full Text Available A large-scale production of necklace-like SiC/SiO2 heterojunctions was obtained by a molten salt-mediated chemical vapor reaction technique without a metallic catalyst or flowing gas. The effect of the firing temperature on the evolution of the phase composition, microstructure, and morphology of the SiC/SiO2 heterojunctions was studied. The necklace-like SiC/SiO2 nanochains, several centimeters in length, were composed of SiC/SiO2 core-shell chains and amorphous SiO2 beans. The morphologies of the as-prepared products could be tuned by adjusting the firing temperature. In fact, the diameter of the SiO2 beans decreased, whereas the diameter of the SiC fibers and the thickness of the SiO2 shell increased as the temperature increased. The growth mechanism of the necklace-like structure was controlled by the vapor-solid growth procedure and the modulation procedure via a molten salt-mediated chemical vapor reaction process.

  15. Status and prospects for SiC-SiC composite materials development for fusion applications

    International Nuclear Information System (INIS)

    Sharafat, S.; Jones, R.H.; Kohyama, A.; Fenici, P.

    1995-01-01

    Silicon carbide (SiC) composites are very attractive for fusion applications because of their low afterheat and low activation characteristics coupled with excellent high temperature properties. These composites are relatively new materials that will require material development as well as evaluation of hermiticity, thermal conductivity, radiation stability, high temperature strength, fatigue, thermal shock, and joining techniques. The radiation stability of SiC-SiC composites is a critical aspect of their application as fusion components and recent results will be reported. Many of the non-fusion specific issues are under evaluation by other ceramic composite development programs, such as the US national continuous fiber ceramic composites.The current development status of various SiC-SiC composites research and development efforts is given. Effect of neutron irradiation on the properties of SiC-SiC composite between 500 and 1200 C are reported. Novel high temperature properties specific to ceramic matrix composite (CMC) materials are discussed. The chemical stability of SiC is reviewed briefly. Ongoing research and development efforts for joining CMC materials including SiC-SiC composites are described. In conclusion, ongoing research and development efforts show extremely promising properties and behavior for SiC-SiC composites for fusion applications. (orig.)

  16. Thermochemical instability effects in SiC-based fibers and SiC{sub f}/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Henager, C.H.; Jones, R.H. [Pacific Northwest National Laboratory, Richland, WA (United States)

    1997-08-01

    Thermochemical instability in irradiated SiC-based fibers with an amorphous silicon oxycarbide phase leads to shrinkage and mass loss. SiC{sub f}/SiC composites made with these fibers also exhibit mass loss as well as severe mechanical property degradation when irradiated at 800{degrees}C, a temperature much below the generally accepted 1100{degrees}C threshold for thermomechanical degradation alone. The mass loss is due to an internal oxidation mechanism within these fibers which likely degrades the carbon interphase as well as the fibers in SiC{sub f}/SiC composites even in so-called {open_quotes}inert{close_quotes} gas environments. Furthermore, the mechanism must be accelerated by the irradiation environment.

  17. Tunneling magnetoresistance in Si nanowires

    KAUST Repository

    Montes Muñoz, Enrique

    2016-11-09

    We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green\\'s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we systematically study the spin transport properties for neutral nanowires and both n and p doping conditions. We find a substantial low bias magnetoresistance for the neutral case, which halves for an applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the magnetoresistance, as soon as the conductance is no longer dominated by tunneling.

  18. Temperature dependence of dark current of pSi-n(Si2)1-x(CdS)x structures

    International Nuclear Information System (INIS)

    Usmonov, Sh.N.

    2007-01-01

    Full text: The research of influence of isovalent impurity on electric and photo-electric properties of semiconductors where formative with semiconductor continuous solid solutions (CSS) of substitution presents both the fundamental and the applied application interest at the area of material science and photoelectrical properties of semiconductors. In the given work results of experimental researches (Si 2 ) 1-x (CdS) x epitaxial layers grown on c-Si substrates by a method liquid phase epitaxy are presented. The grown layers had thickness and ∼ 10 micron, n-type of conductivity with specific resistance 0,016 Ohm sm. Dependences of the dark current of pSi-n(Si 2 ) 1-x (CdS) x structures have been investigated at various values of a bias voltage. In experiment it was observed anomaly dependence of current. The current with arising of temperature begun monotonously aroused and reached some minimal value at temperature 100 C and then again starts to arise up to temperature 200 C. Arising of dark current is caused of the band-to-band thermal generation of electron-hole pairs. The voltage drop at the temperature 100 C is caused by the recharging of impurity atoms CdS. It is known, that width of the forbidden band of CdS Eg,CdS=2,48 eV more than Eg,Si=1,1 eV. Covalent bond of atoms CdS is stronger than Si-Si bond. However, when the molecule of CdS replaces two atoms of silicon in tetrahedral lattice of silicon the bonds of Cd-S become weak under influence of surrounding atoms of silicon. It causes to occurrence impurity level CdS located on Ei=1,2 eV below a valence band top of silicon. The generation of electron-hole pairs with participation of CdS impurities at the 100 C temperature is occurred under action thermal phonons. However, holes formed on impurity levels are localized and they will be recombination centers. Therefore drop of the dark current caused by dispersion of carriers on impurity centers. (authors)

  19. Effect of Si substitution on structural, electronic and optical properties of YNi{sub 4}Si-type DyNi{sub 5−x}Si{sub x} (x=0, 1, 2) compounds

    Energy Technology Data Exchange (ETDEWEB)

    Maurya, Dinesh Kumar; Saini, Sapan Mohan, E-mail: smsaini.phy@nitrr.ac.in

    2016-10-15

    We employed first principle calculations for investigation of structural, electronic and optical properties of YNi{sub 4}Si-type DyNi{sub 5−x}Si{sub x} (x=0, 1, 2) compounds. These properties are studied first time on YNi{sub 4}Si-type DyNi{sub 5−x}Si{sub x} compounds. The exchange and correlation potential is treated by the Coulomb corrected local spin density approximation (LSDA+U) method for better accounting of the correlation between the 4f electrons. The optimized lattice constants and internal cell parameters are in agreement with the available data. Self consistence band structure calculations show that Ni-3d states remains in valance band and dominant below the E{sub F}, while Dy-5d and 4f states mainly contributes above Fermi Energy (E{sub F}) in DyNi{sub 5−x}Si{sub x} (x=0, 1, 2) compounds. We also find that when silicon for nickel substitution takes place (DyNi{sub 4}Si), there is a gradual hybridization of Ni-3d and Si-3p states results, nickel moments decrease rapidly in agreement with the experiment. Optical spectra shows the main absorption peak around 4 eV depends on the substituent concentration and could be due to transition from hybridized band (Ni-3d and Si-3p), below E{sub F} to free Dy-4d states. Frequency-dependent refractive index, n(ω), and the extinction coefficient, k(ω), of DyNi{sub 5−x}Si{sub x} (x=0, 1, 2) are also calculated for the radiation up to 14 eV. - Highlights: • Calculated DOS revels that Ni-3d states are dominated below Fermi level (E{sub F}). • Spin down Dy-4f states show significant contribution to DOS above E{sub F.} • Nickel moments decrease rapidly with substitution of silicon for nickel (DyNi{sub 4}Si). • Most significant peak is found around 7eV in optical conductivity. • Nickel moments decrease rapidly with substitution of silicon for nickel (DyNi{sub 4}Si). • Peak indicates the possibility of transitions from Ni-3d states to empty spin down Dy-4f states.

  20. Wear Characteristics According of Heat Treatment of Si3N4 with Different Amounts of SiO2 Nano-Colloid

    International Nuclear Information System (INIS)

    Ahn, Seok Hwan; Nam, Ki Woo

    2014-01-01

    This study sintered Si 3 N 4 with different amounts of SiO 2 nano-colloid. The surface of a mirror-polished specimen was coated with SiO 2 nano-colloid, and cracks were healed when the specimen was treated at a temperature of 1273 K for 1 h in air. Wear specimen experiments were conducted after heat treatments for 10 min at 1073, 1273, and 1573 K. The heat-treated surface that was coated with the SiO 2 nano-colloid was slightly rougher than the noncoated surface. The oxidation state of the surface according to the heat treatment temperature showed no correlation with the surface roughness. Moreover, the friction coefficient, wear loss, and bending strength were not related to the surface roughness. Si 3 N 4 exhibited an abrasive wear behavior when SKD11 was used as an opponent material. The friction coefficient was proportional to the wear loss, and the bending strength was inversely proportional to the friction coefficient and wear loss. The friction coefficient and wear loss increased with increasing amounts of the SiO 2 nanocolloid. In addition, the friction coefficient was slightly increased by increasing the heat treatment temperature

  1. Influence of the crystallization process on the luminescence of multilayers of SiGe nanocrystals embedded in SiO2

    International Nuclear Information System (INIS)

    Avella, M.; Prieto, A.C.; Jimenez, J.; Rodriguez, A.; Sangrador, J.; Rodriguez, T.; Ortiz, M.I.; Ballesteros, C.

    2008-01-01

    Multilayers of SiGe nanocrystals embedded in an oxide matrix have been fabricated by low-pressure chemical vapor deposition of SiGe and SiO 2 onto Si wafers (in a single run at 390 deg. C and 50 mTorr, using GeH 4 , Si 2 H 6 and O 2 ) followed by a rapid thermal annealing treatment to crystallize the SiGe nanoparticles. The main emission band is located at 400 nm in both cathodoluminescence and photoluminescence experiments at 80 K and also at room temperature. The annealing conditions (temperatures ranging from 700 to 1000 deg. C and for times of 30 and 60 s) have been investigated in samples with different diameter of the nanoparticles (from ∼3 to ≥5 nm) and oxide interlayer thickness (15 and 35 nm) in order to establish a correlation between the crystallization of the nanoparticles, the degradation of their composition by Ge diffusion and the intensity of the luminescence emission band. Structures with small nanoparticles (3-4.5 nm) separated by thick oxide barriers (∼35 nm) annealed at 900 deg. C for 60 s yield the maximum intensity of the luminescence. An additional treatment at 450 deg. C in forming gas for dangling-bond passivation increases the intensity of the luminescence band by 25-30%

  2. Transformation of sludge Si to nano-Si/SiOx structure by oxygen inward diffusion as precursor for high performance anodes in lithium ion batteries

    Science.gov (United States)

    Hua, Qiqi; Dai, Dongyang; Zhang, Chengzhi; Han, Fei; Lv, Tiezheng; Li, Xiaoshan; Wang, Shijie; Zhu, Rui; Liao, Haojie; Zhang, Shiguo

    2018-05-01

    Although several Si/C composite structures have been proposed for high-performance lithium-ion batteries (LIBs), they have still suffered from expensive and complex processes of nano-Si production. Herein, a simple, controllable oxygen inward diffusion was utilized to transform Si sludge obtained from the photovoltaic (PV) industry into the nano-Si/SiOx structure as a result of the high diffusion efficiency of O inside Si and high surface area of the sludge. After further process, a yolk/shell Si/C structure was obtained as an anode material for LIBs. This composite demonstrated an excellent cycling stability, with a high reversible capacity (˜ 1250 mAh/g for 500 cycles), by void space originally left by the SiOx accommodate inner Si expansion. We believe this is a rather simple way to convert the waste Si into a valuable nano-Si for LIB applications.

  3. Formation of metallic Si and SiC nanoparticles from SiO2 particles by plasma-induced cathodic discharge electrolysis in chloride melt

    International Nuclear Information System (INIS)

    Tokushige, M.; Tsujimura, H.; Nishikiori, T.; Ito, Y.

    2013-01-01

    Silicon nanoparticles are formed from SiO 2 particles by conducting plasma-induced cathodic discharge electrolysis. In a LiCl–KCl melt in which SiO 2 particles were suspended at 450 °C, we obtained Si nanoparticles with diameters around 20 nm. During the electrolysis period, SiO 2 particles are directly reduced by discharge electrons on the surface of the melt just under the discharge, and the deposited Si atom clusters form Si nanoparticles, which leave the surface of the original SiO 2 particle due to free spaces caused by a molar volume difference between SiO 2 and Si. We also found that SiC nanoparticles can be obtained using carbon anode. Based on Faraday's law, the current efficiency for the formation of Si nanoparticles is 70%

  4. SI konkurss / Anna Roomet

    Index Scriptorium Estoniae

    Roomet, Anna

    2006-01-01

    Konkursist, auhinnatseremooniast ja ekspositsioonist Arhitektuuri- ja Disainigaleriis, žürii koosseis. Intervjuu eesti parima noore disaineri preemia SÄSI pälvinud Pavel Sidorenko ning väikese SÄSI saanud Björn Koobi, Ülle Jehe ja Igor Volkoviga

  5. Intranasal delivery of antiviral siRNA.

    Science.gov (United States)

    Barik, Sailen

    2011-01-01

    Intranasal administration of synthetic siRNA is an effective modality of RNAi delivery for the prevention and therapy of respiratory diseases, including pulmonary infections. Vehicles used for nasal siRNA delivery include established as well as novel reagents, many of which have been recently optimized. In general, they all promote significant uptake of siRNA into the lower respiratory tract, including the lung. When properly designed and optimized, these siRNAs offer significant protection against respiratory viruses such as influenza virus, parainfluenza virus and respiratory syncytial virus (RSV). Nasally administered siRNA remains within the lung and does not access systemic blood flow, as judged by its absence in other major organs such as liver, heart, kidney, and skeletal muscle. Adverse immune reaction is generally not encountered, especially when immunogenic and/or off-target siRNA sequences and toxic vehicles are avoided. In fact, siRNA against RSV has entered Phase II clinical trials in human with promising results. Here, we provide a standardized procedure for using the nose as a specific route for siRNA delivery into the lung of laboratory animals. It should be clear that this simple and efficient system has enormous potential for therapeutics.

  6. Self-aligned indium–gallium–zinc oxide thin-film transistors with SiNx/SiO2/SiNx/SiO2 passivation layers

    International Nuclear Information System (INIS)

    Chen, Rongsheng; Zhou, Wei; Zhang, Meng; Kwok, Hoi-Sing

    2014-01-01

    Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed in this paper. The resulting a-IGZO TFT exhibits high reliability against bias stress and good electrical performance including field-effect mobility of 5 cm 2 /Vs, threshold voltage of 2.5 V, subthreshold swing of 0.63 V/decade, and on/off current ratio of 5 × 10 6 . With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. The proposed a-IGZO TFTs in this paper can act as driving devices in the next generation flat panel displays. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed. • The source/drain areas are hydrogen-doped by CHF3 plasma. • The devices show good electrical performance and high reliability against bias stress

  7. Back-contacted BaSi

    NARCIS (Netherlands)

    Vismara, R.; Isabella, O.; Zeman, M.

    2017-01-01

    We present the optical investigation of a novel back-contacted architecture for solar cells based on a thin barium (di)silicide (BaSi2) absorber. First, through the analysis of absorption limits of different semiconducting materials, we show the potential of BaSi2 for

  8. Natural 32Si as environmental tracer

    International Nuclear Information System (INIS)

    Morgenstern, U.

    2005-01-01

    There is a pressing need for an effective dating tool to cover the historical past. Cosmogenic 32 Si, with a half-life of ca. 140 years, is ideally suited to provide time information in the range 50-1000 years. Detection of 32 Si is, however, very difficult due to extremely low natural concentrations and isotopic ratios. (author). 2 refs

  9. Naturally occurring 32 Si and low-background silicon dark matter detectors

    Energy Technology Data Exchange (ETDEWEB)

    Orrell, John L.; Arnquist, Isaac J.; Bliss, Mary; Bunker, Raymond; Finch, Zachary S.

    2018-05-01

    The naturally occurring radioisotope Si-32 represents a potentially limiting background in future dark matter direct-detection experiments. We investigate sources of Si-32 and the vectors by which it comes to reside in silicon crystals used for fabrication of radiation detectors. We infer that the Si-32 concentration in commercial single-crystal silicon is likely variable, dependent upon the specific geologic and hydrologic history of the source (or sources) of silicon “ore” and the details of the silicon-refinement process. The silicon production industry is large, highly segmented by refining step, and multifaceted in terms of final product type, from which we conclude that production of Si-32-mitigated crystals requires both targeted silicon material selection and a dedicated refinement-through-crystal-production process. We review options for source material selection, including quartz from an underground source and silicon isotopically reduced in Si-32. To quantitatively evaluate the Si-32 content in silicon metal and precursor materials, we propose analytic methods employing chemical processing and radiometric measurements. Ultimately, it appears feasible to produce silicon-based detectors with low levels of Si-32, though significant assay method development is required to validate this claim and thereby enable a quality assurance program during an actual controlled silicon-detector production cycle.

  10. Stabilization of Si_60 Cage Structure: The Agony and the Ecstasy

    Science.gov (United States)

    Kawazoe, Y.; Sun, Q.; Wang, Q.; Rao, B. K.; Jena, P.

    2003-03-01

    The unique role of silicon in the micro-electronics industry has motivated many researchers to find ways to stabilize Si_60 with fullerene structure. In spite of numerous experimental attempts, synthesis of a theoretically predicted C_60-supported Si_60 cluster (C_60@Si_60) has not been possible. Using a state-of-the-art theoretical method, we provide the first answer for this long-standing contradiction between the experimental observation and the theoretical prediction. The flaws in earlier theoretical works are pointed out, and Si_60 is shown to be unstable in the fullerene structure either on its own or when supported on a C_60 fullerene (C_60@Si_60). On the other hand, we show that Si_60 cage can be stabilized by using magic clusters such as Al_12X (X = Si, Ge, Sn, Pb) as endohedral units, which have been identified in recent experiment as stable clusters and as suitable building blocks for cluster-assembled materials.

  11. Preparation and study of nanostructured TiAlSiN thin films

    Directory of Open Access Journals (Sweden)

    Jakab-Farkas L.

    2011-12-01

    Full Text Available TiAlSiN thin film coatings were deposited by DC reactive magnetron sputtering of TiAlSi target with 40 at.% Ti, 40 at.% Al and 20 at.% Si, performed in N2-Ar gas mixture. The sputtering power used in these experiments was controlled for 400 W. The bias voltage of the substrates was kept at -20 V DC and the temperature at 500 0C. All the samples were prepared with a constant flow rate of Ar and different nitrogen flow rates, which were selected from 1.25 sccm to 4.0 sccm. Nanostructured TiAlSiN coatings were developed on Si(100 and HSS substrates. Microstructure investigation of the coatings was performed by transmission electron microscopy investigation, structure investigation was performed by XRD analysis, and the mechanical properties of the coatings have been tested by ball-on-disk tribological investigation and micro-Vickers hardness measurements. In this paper will be shown that for optimized nitrogen concentration the microstructure of TiAlSiN coating evolve from a competitive columnar growth to a dendritic growth one with very fine nano-lamellae like morphology. The developed nanostructured TiAlSiN coatingshave hardness HV exceeding 40 GPa and show an increased abrasive wear resistance

  12. Electrochemical corrosion behavior of Ni-containing hypoeutectic Al-Si alloy

    Directory of Open Access Journals (Sweden)

    Abul Hossain

    2015-12-01

    Full Text Available Electrochemical corrosion characteristics of the thermally treated 2 wt % Ni-containing Al-6Si-0.5Mg alloy were studied in NaCl solutions. The corrosion behavior of thermally treated (T6 Al-6Si-0.5Mg (-2Ni alloys in 0.1 M NaCl solution was investigated by electrochemical potentiodynamic polarization technique consisting of linear polarization method using the fit of Tafel plot and electrochemical impedance spectroscopy (EIS techniques. Generally, linear polarization experiments revealed a decrease of the corrosion rate at thermal treated Al-6Si-0.5Mg-2Ni alloy. The EIS test results showed that there is no significant change in charge transfer resistance (Rct after addition of Ni to Al-6Si-0.5Mg alloy. The magnitude of the positive shift in the open circuit potential (OCP, corrosion potential (Ecorr and pitting corrosion potential (Epit increased with the addition of Ni to Al-6Si-0.5Mg alloy. The forms of corrosion in the studied Al-6Si-0.5Mg alloy (except Al-6Si-0.5Mg-2Ni alloy are pitting corrosion as obtained from the scanning electron microscopy (SEM study.

  13. Naturally occurring 32Si and low-background silicon dark matter detectors

    Science.gov (United States)

    Orrell, John L.; Arnquist, Isaac J.; Bliss, Mary; Bunker, Raymond; Finch, Zachary S.

    2018-05-01

    The naturally occurring radioisotope 32Si represents a potentially limiting background in future dark matter direct-detection experiments. We investigate sources of 32Si and the vectors by which it comes to reside in silicon crystals used for fabrication of radiation detectors. We infer that the 32Si concentration in commercial single-crystal silicon is likely variable, dependent upon the specific geologic and hydrologic history of the source (or sources) of silicon "ore" and the details of the silicon-refinement process. The silicon production industry is large, highly segmented by refining step, and multifaceted in terms of final product type, from which we conclude that production of 32Si-mitigated crystals requires both targeted silicon material selection and a dedicated refinement-through-crystal-production process. We review options for source material selection, including quartz from an underground source and silicon isotopically reduced in 32Si. To quantitatively evaluate the 32Si content in silicon metal and precursor materials, we propose analytic methods employing chemical processing and radiometric measurements. Ultimately, it appears feasible to produce silicon detectors with low levels of 32Si, though significant assay method development is required to validate this claim and thereby enable a quality assurance program during an actual controlled silicon-detector production cycle.

  14. Synthesis of Ultrathin Si Nanosheets from Natural Clays for Lithium-Ion Battery Anodes.

    Science.gov (United States)

    Ryu, Jaegeon; Hong, Dongki; Choi, Sinho; Park, Soojin

    2016-02-23

    Two-dimensional Si nanosheets have been studied as a promising candidate for lithium-ion battery anode materials. However, Si nanosheets reported so far showed poor cycling performances and required further improvements. In this work, we utilize inexpensive natural clays for preparing high quality Si nanosheets via a one-step simultaneous molten salt-induced exfoliation and chemical reduction process. This approach produces high purity mesoporous Si nanosheets in high yield. As a control experiment, two-step process (pre-exfoliated silicate sheets and subsequent chemical reduction) cannot sustain their original two-dimensional structure. In contrast, one-step method results in a production of 5 nm-thick highly porous Si nanosheets. Carbon-coated Si nanosheet anodes exhibit a high reversible capacity of 865 mAh g(-1) at 1.0 A g(-1) with an outstanding capacity retention of 92.3% after 500 cycles. It also delivers high rate capability, corresponding to a capacity of 60% at 20 A g(-1) compared to that of 2.0 A g(-1). Furthermore, the Si nanosheet electrodes show volume expansion of only 42% after 200 cycles.

  15. Novel polyester/SiO2 nanocomposite membranes: Synthesis, properties and morphological studies

    Science.gov (United States)

    Ahmadizadegan, Hashem; Esmaielzadeh, Sheida

    2018-06-01

    In this paper, a new type of soluble polyester/silica (PE/SiO2) hybrid was prepared by the ultrasonic irradiation process. The coupling agent γ-glycidyloxypropyltrimethoxysilane (GOTMS) was chosen to enhance the compatibility between the polyester (PE) and silica (SiO2). Furthermore, the effects of the coupling agent on the morphologies and properties of the PE/SiO2 hybrids were investigated using UV-vis and FT-IR spectroscopies and FE-SEM. The densities and solubilities of the PE/SiO2 hybrids were also measured. The results show that the size of the silica particle was markedly reduced by the introduction of the coupling agent, which made the PE/SiO2 hybrid films become transparent. Furthermore, thermal stability, residual solvent in the membrane film and structural ruination of membranes were analyzed by thermal gravimetric analysis (TGA). The effects of SiO2 nanoparticles on the glass transition temperature (Tg) of the prepared nanocomposites were studied by differential scanning calorimetry (DSC). Moreover, their mechanical properties were also characterized. It can be observed that the Young's moduli (E) of the hybrid films increase linearly with the silica content. The results obtained from gas permeation experiments with a constant pressure setup showed that adding SiO2 nanoparticles to the polymeric membrane structure increased the permeability of the membranes.

  16. Effects of DD and DT neutron irradiation on some Si devices for fusion diagnostics

    International Nuclear Information System (INIS)

    Tanimura, Y.; Iida, T.

    1998-01-01

    In order to examine the difference in the irradiation effects on Si devices between DT and DD neutrons, CCD image sensors, memory ICs and a Si detector were irradiated with neutrons from a deuteron accelerator. The transient effects (i.e. neutron-induced background noises) and permanent effects (i.e. neutron damage) on them were in situ measured during irradiation. Regarding the transient effects, brightening spot noises, soft-error upsets and induced-charge noises were measured for the CCDs, memory ICs and Si detector, respectively. As for the permanent effect, the number of damaged cells of the CCDs and the leakage current of the Si detector increased with neutron fluence. Also we developed a Monte-Carlo code with the TRIM code to evaluate the correlation of DT and DD neutron effects on Si devices. The calculated correlation factor of DT and DD neutron damage for Si devices agreed approximately with the correlation factor obtained from the irradiation experiments on the CCDs and Si detector. (orig.)

  17. Effects of DD and DT neutron irradiation on some Si devices for fusion diagnostics

    Science.gov (United States)

    Tanimura, Yoshihiko; Iida, Toshiyuki

    1998-10-01

    In order to examine the difference in the irradiation effects on Si devices between DT and DD neutrons, CCD image sensors, memory ICs and a Si detector were irradiated with neutrons from a deuteron accelerator. The transient effects (i.e. neutron-induced background noises) and permanent effects (i.e. neutron damage) on them were in situ measured during irradiation. Regarding the transient effects, brightening spot noises, soft-error upsets and induced-charge noises were measured for the CCDs, memory ICs and Si detector, respectively. As for the permanent effect, the number of damaged cells of the CCDs and the leakage current of the Si detector increased with neutron fluence. Also we developed a Monte-Carlo code with the TRIM code to evaluate the correlation of DT and DD neutron effects on Si devices. The calculated correlation factor of DT and DD neutron damage for Si devices agreed approximately with the correlation factor obtained from the irradiation experiments on the CCDs and Si detector.

  18. SHS synthesis of Si-SiC composite powders using Mg and reactants from industrial waste

    Science.gov (United States)

    Chanadee, Tawat

    2017-11-01

    Si-SiC composite powders were synthesized by self-propagating high-temperature synthesis (SHS) using reactants of fly ash-based silica, sawdust-based activated carbon, and magnesium. Fly ash-based silica and sawdust-based activated carbon were prepared from coal mining fly ash and Para rubber-wood sawdust, respectively. The work investigated the effects of the synthesis atmosphere (air and Ar) on the phase and morphology of the SHS products. The SHS product was leached by a two-step acid leaching processes, to obtain the Si-SiC composite powder. The SHS product and SHS product after leaching were characterized by X-ray diffractometry, scanning electron microscopy and energy dispersive X-ray spectrometry. The results indicated that the SHS product synthesized in air consisted of Si, SiC, MgO, and intermediate phases (SiO2, Mg, Mg2SiO4, Mg2Si), whereas the SHS product synthesized in Ar consisted of Si, SiC, MgO and a little Mg2SiO4. The SiC content in the leached-SHS product was higher when Ar was used as the synthesis atmosphere. As well as affecting the purity, the synthesis atmospheres also affected the average crystalline sizes of the products. The crystalline size of the product synthesized in Ar was smaller than that of the product synthesized in air. All of the results showed that fly ash and sawdust could be effective waste-material reactants for the synthesis of Si-SiC composite powders.

  19. Low-temperature Au/a-Si wafer bonding

    International Nuclear Information System (INIS)

    Jing, Errong; Xiong, Bin; Wang, Yuelin

    2011-01-01

    The Si/SiO 2 /Ti/Au–Au/Ti/a-Si/SiO 2 /Si bonding structure, which can also be used for the bonding of non-silicon material, was investigated for the first time in this paper. The bond quality test showed that the bond yield, bond repeatability and average shear strength are higher for this bonding structure. The interfacial microstructure analysis indicated that the Au-induced crystallization of the amorphous silicon process leads to big Si grains extending across the bond interface and Au filling the other regions of the bond interface, which result into a strong and void-free bond interface. In addition, the Au-induced crystallization reaction leads to a change in the IR images of the bond interface. Therefore, the IR microscope can be used to evaluate and compare the different bond strengths qualitatively. Furthermore, in order to verify the superiority of the bonding structure, the Si/SiO 2 /Ti/Au–a-Si/SiO 2 /Si (i.e. no Ti/Au layer on the a-Si surface) and Si/SiO 2 /Ti/Au–Au/Ti/SiO 2 /Si bonding structures (i.e. Au thermocompression bonding) were also investigated. For the Si/SiO 2 /Ti/Au–a-Si/SiO 2 /Si bonding structure, the poor bond quality is due to the native oxide layer on the a-Si surface, and for the Si/SiO 2 /Ti/Au–Au/Ti/SiO 2 /Si bonding structure, the poor bond quality is caused by the wafer surface roughness which prevents intimate contact and limits the interdiffusion at the bond interface.

  20. Gas-source molecular beam epitaxy of Si(111) on Si(110) substrates by insertion of 3C-SiC(111) interlayer for hybrid orientation technology

    Energy Technology Data Exchange (ETDEWEB)

    Bantaculo, Rolando, E-mail: rolandobantaculo@yahoo.com; Saitoh, Eiji; Miyamoto, Yu; Handa, Hiroyuki; Suemitsu, Maki

    2011-11-01

    A method to realize a novel hybrid orientations of Si surfaces, Si(111) on Si(110), has been developed by use of a Si(111)/3C-SiC(111)/Si(110) trilayer structure. This technology allows us to use the Si(111) portion for the n-type and the Si(110) portion for the p-type channels, providing a solution to the current drive imbalance between the two channels confronted in Si(100)-based complementary metal oxide semiconductor (CMOS) technology. The central idea is to use a rotated heteroepitaxy of 3C-SiC(111) on Si(110) substrate, which occurs when a 3C-SiC film is grown under certain growth conditions. Monomethylsilane (SiH{sub 3}-CH{sub 3}) gas-source molecular beam epitaxy (GSMBE) is used for this 3C-SiC interlayer formation while disilane (Si{sub 2}H{sub 6}) is used for the top Si(111) layer formation. Though the film quality of the Si epilayer leaves a lot of room for betterment, the present results may suffice to prove its potential as a new technology to be used in the next generation CMOS devices.

  1. Centrifugally cast Zn-27Al-xMg-ySi alloys and their in situ (Mg2Si + Si)/ZA27 composites

    International Nuclear Information System (INIS)

    Wang Qudong; Chen Yongjun; Chen Wenzhou; Wei Yinhong; Zhai Chunquan; Ding Wenjiang

    2005-01-01

    Effects of composition, mold temperature, rotating rate and modification on microstructure of centrifugally cast Zn-27Al-xMg-ySi alloys have been investigated. In situ composites of Zn-27Al-6.3Mg-3.7Si and Zn-27Al-9.8Mg-5.2Si alloys were fabricated by centrifugal casting using heated permanent mold. These composites consist of three layers: inner layer segregates lots of blocky primary Mg 2 Si and a litter blocky primary Si, middle layer contains without primary Mg 2 Si and primary Si, outer layer contains primary Mg 2 Si and primary Si. The position, quantity and distribution of primary Mg 2 Si and primary Si in the composites are determined jointly by alloy composition, solidification velocity under the effect of centrifugal force and their floating velocity inward. Na salt modifier can refine grain and primary Mg 2 Si and make primary Mg 2 Si distribute more evenly and make primary Si nodular. For centrifugally cast Zn-27Al-3.2Mg-1.8Si alloy, the microstructures of inner layer, middle layer and outer layer are almost similar, single layer materials without primary Mg 2 Si and primary Si are obtained, and their grain sizes increased with the mold temperature increasing

  2. Diffusion in ordered Fe-Si alloys

    International Nuclear Information System (INIS)

    Sepiol, B.; Vogl, G.

    1995-01-01

    The measurement of the diffusional Moessbauer line broadening in single crystalline samples at high temperatures provides microscopic information about atomic jumps. We can separate jumps of iron atoms between the various sublattices of Fe-Si intermetallic alloys (D0 3 structure) and measure their frequencies. The diffusion of iron in Fe-Si samples with Fe concentrations between 75 and 82 at% shows a drastic composition dependence: the jump frequency and the proportion between jumps on Fe sublattices and into antistructure (Si) sublattice positions change greatly. Close to Fe 3 Si stoichiometry iron diffusion is extremely fast and jumps are performed exclusively between the three Fe sublattices. The change in the diffusion process when changing the alloy composition from stoichiometric Fe 3 Si to the iron-rich side is discussed. (orig.)

  3. DLC-Si protective coatings for polycarbonates

    Directory of Open Access Journals (Sweden)

    Damasceno J.C.

    2003-01-01

    Full Text Available In this work, a-C:H:Si (DLC-Si films were produced onto crystalline silicon and polycarbonate substrates by the rf-PACVD technique from gaseous mixtures of CH4 + SiH4 and C2H2 + SiH4. The effects of self-bias and gas composition upon mechanical and optical properties of the films were investigated. Micro-hardness, residual stress, surface roughness and refractive index measurements were employed for characterization. By incorporating low concentrations of silicon and by exploring the more favorable conditions for the rf-PACVD deposition technique, highly adherent DLC-Si thin films were produced with reduced internal stresses (lower than 1 GPa, high hardness (around 20 GPa and high deposition rates (up to 10 µm/h. Results that show the technological viability of this material for application as protective coatings for polycarbonates are also discussed.

  4. SiC for microwave power transistors

    Energy Technology Data Exchange (ETDEWEB)

    Sriram, S.; Siergiej, R.R.; Clarke, R.C.; Agarwal, A.K.; Brandt, C.D. [Northrop Grumman Sci. and Technol. Center, Pittsburgh, PA (United States)

    1997-07-16

    The advantages of SiC for high power, microwave devices are discussed. The design considerations, fabrication, and experimental results are described for SiC MESFETs and SITs. The highest reported f{sub max} for a 0.5 {mu}m MESFET using semi-insulating 4H-SiC is 42 GHz. These devices also showed a small signal gain of 5.1 dB at 20 GHz. Other 4H-SiC MESFETs have shown a power density of 3.3 W/mm at 850 MHz. The largest SiC power transistor reported is a 450 W SIT measured at 600 MHz. The power output density of this SIT is 2.5 times higher than that of comparable silicon devices. SITs have been designed to operate as high as 3.0 GHz, with a 3 cm periphery part delivering 38 W of output power. (orig.) 28 refs.

  5. Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

    Science.gov (United States)

    Timofeev, V. A.; Nikiforov, A. I.; Tuktamyshev, A. R.; Mashanov, V. I.; Loshkarev, I. D.; Bloshkin, A. A.; Gutakovskii, A. K.

    2018-04-01

    The GeSiSn, SiSn layer growth mechanisms on Si(100) were investigated and the kinetic diagrams of the morphological GeSiSn, SiSn film states in the temperature range of 150 °C-450 °C at the tin content from 0% to 35% were built. The phase diagram of the superstructural change on the surface of Sn grown on Si(100) in the annealing temperature range of 0 °C-850 °C was established. The specular beam oscillations were first obtained during the SiSn film growth from 150 °C to 300 °C at the Sn content up to 35%. The transmission electron microscopy and x-ray diffractometry data confirm the crystal perfection and the pseudomorphic GeSiSn, SiSn film state, and also the presence of smooth heterointerfaces between GeSiSn or SiSn and Si. The photoluminescence for the multilayer periodic GeSiSn/Si structures in the range of 0.6-0.8 eV was detected. The blue shift with the excitation power increase is observed suggesting the presence of a type II heterostructure. The creation of tensile strained Ge films, which are pseudomorphic to the underlying GeSn layer, is confirmed by the results of the formation and analysis of the reciprocal space map in the x-ray diffractometry. The tensile strain in the Ge films reached the value in the range of 0.86%-1.5%. The GeSn buffer layer growth in the Sn content range from 8% to 12% was studied. The band structure of heterosystems based on pseudomorphic GeSiSn, SiSn and Ge layers was calculated and the valence and conduction band subband position dependences on the Sn content were built. Based on the calculation, the Sn content range in the GeSiSn, SiSn, and GeSn layers, which corresponds to the direct bandgap GeSiSn, SiSn, and Ge material, was obtained.

  6. Si nanocrystals embedded in SiO2: Optical studies in the vacuum ultraviolet range

    DEFF Research Database (Denmark)

    Pankratov, V.; Osinniy, Viktor; Kotlov, A.

    2011-01-01

    done. It is demonstrated that the experimentally determined blueshift of the photoluminescence excitation and absorption spectra is larger than the theoretical predictions. The influence of point defects in the SiO2 matrix on the optical and luminescence properties of the embedded Si nanocrystals...... is discussed. Moreover, it is demonstrated that no energy transfer takes place between the SiO2 and Si nanocrystals when the excitation energy is higher than the band-to-band transition energy in SiO2....

  7. Luminescence of solar cells with a-Si:H/c-Si heterojunctions

    Science.gov (United States)

    Zhigunov, D. M.; Il'in, A. S.; Forsh, P. A.; Bobyl', A. V.; Verbitskii, V. N.; Terukov, E. I.; Kashkarov, P. K.

    2017-05-01

    We have studied the electroluminescence (EL) and photoluminescence (PL) of solar cells containing a-Si:H/c-Si heterojunctions. It is established that both the EL and PL properties of these cells are determined by the radiative recombination of nonequilibrium carriers in crystalline silicon (c-Si). The external EL energy yield (efficiency) of solar cells with a-Si:H/c-Si heterojunctions at room temperature amounts to 2.1% and exceeds the value reached in silicon diode structures. This large EL efficiency can be explained by good passivation of the surface of crystalline silicon and the corresponding increase in lifetime of minority carrier s in these solar cells.

  8. Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation

    Directory of Open Access Journals (Sweden)

    Jhovani Bornacelli

    2013-01-01

    Full Text Available We studied the photoluminescence (PL of Si nanocrystals (Si-NCs embedded in SiO2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm inside the SiO2 achieving a robust and better protected system. After metal ion implantation (Ag or Au, and a subsequent thermal annealing at 600°C under hydrogen-containing atmosphere, the PL signal exhibits a noticeable increase. The ion metal implantation was done at energies such that its distribution inside the silica does not overlap with the previously implanted Si ion . Under proper annealing Ag or Au nanoparticles (NPs could be nucleated, and the PL signal from Si-NCs could increase due to plasmonic interactions. However, the ion-metal-implantation-induced damage can enhance the amount of hydrogen, or nitrogen, that diffuses into the SiO2 matrix. As a result, the surface defects on Si-NCs can be better passivated, and consequently, the PL of the system is intensified. We have selected different atmospheres (air, H2/N2 and Ar to study the relevance of these annealing gases on the final PL from Si-NCs after metal ion implantation. Studies of PL and time-resolved PL indicate that passivation process of surface defects on Si-NCs is more effective when it is assisted by ion metal implantation.

  9. First-principles calculations of orientation dependence of Si thermal oxidation based on Si emission model

    Science.gov (United States)

    Nagura, Takuya; Kawachi, Shingo; Chokawa, Kenta; Shirakawa, Hiroki; Araidai, Masaaki; Kageshima, Hiroyuki; Endoh, Tetsuo; Shiraishi, Kenji

    2018-04-01

    It is expected that the off-state leakage current of MOSFETs can be reduced by employing vertical body channel MOSFETs (V-MOSFETs). However, in fabricating these devices, the structure of the Si pillars sometimes cannot be maintained during oxidation, since Si atoms sometimes disappear from the Si/oxide interface (Si missing). Thus, in this study, we used first-principles calculations based on the density functional theory, and investigated the Si emission behavior at the various interfaces on the basis of the Si emission model including its atomistic structure and dependence on Si crystal orientation. The results show that the order in which Si atoms are more likely to be emitted during thermal oxidation is (111) > (110) > (310) > (100). Moreover, the emission of Si atoms is enhanced as the compressive strain increases. Therefore, the emission of Si atoms occurs more easily in V-MOSFETs than in planar MOSFETs. To reduce Si missing in V-MOSFETs, oxidation processes that induce less strain, such as wet or pyrogenic oxidation, are necessary.

  10. EFFECT OF THE Si POWDER ADDITIONS ON THE PROPERTIES OF SiC COMPOSITES

    Directory of Open Access Journals (Sweden)

    GUOGANG XU

    2012-09-01

    Full Text Available By means of transient plastic phase process, the SiC silicon carbide kiln furniture materials were produced through adding Si powder to SiC materials. At the condition of the same additions of SiO2 powder, the effect of the Si powder additions on properties of silicon carbide materials after sintered at 1450°C for 3 h in air atmosphere was studied by means of SEM and other analysis methods. The results showed that silicon powder contributes to both sintering by liquid state and plastic phase combination to improve the strength of samples. When the Si powder additions is lower than 3.5 %, the density and strength of samples increase and porosity decrease with increasing Si powder additions. However when the Si powder additions is higher than 3.5 %, the density and strength of samples decrease and porosity increase with increasing Si powder additions. With increasing of Si additions, the residual strength of sample after thermal shocked increased and linear change rate decreased, and get to boundary value when Si additions is 4.5 %. The results also indicated that at the same sintering temperature, the sample with 3.5 % silicon powder has maximum strength.

  11. Uniform Si nano-dot fabrication using reconstructed structure of Si(110)

    Science.gov (United States)

    Yano, Masahiro; Uozumi, Yuki; Yasuda, Satoshi; Asaoka, Hidehito

    2018-06-01

    Si nano-dot (ND) formation on Si(110) is observed by means of a scanning tunneling microscope (STM). The initial Si-NDs are Si crystals that are continuous from the substrate and grow during the oxide layer desorption. The NDs fabricated on the flat surface of Si(110)-1 × 1 are surrounded by four types of facets with almost identical appearance probabilities. An increase in the size of the NDs increases the variety of its morphology. In contrast, most Si-NDs fabricated on straight-stepped surface of Si(110)-16 × 2 reconstructed structure are surrounded by only a single type of facet, namely the \\text{Si}(17,15,1)-2 × 1 plane. An appearance probability of the facet in which the base line is along the step of Si(110)-16 × 2 exceeds 75%. This finding provides a fabrication technique of uniformed structural Si-NDs by using the reconstructed structure of Si(110).

  12. Preparation and Characterization of SiO2/SiCN Core-shell Ceramic Microspheres

    Directory of Open Access Journals (Sweden)

    ZHANG Hai-yuan

    2017-05-01

    Full Text Available The SiO2/PSN core-shell microspheres were prepared via an emulsion reaction combined with the polymer-derived ceramics (PDCs method using polysilazane (PSN in situ polymerization on the surface of SiO2 modified by silane coupling agents MPS, followed by pyrolysis process to obtain SiO2/SiCN core-shell ceramic microspheres. The effects of raw mass ratio, curing time and pyrolysis temperature on the formation and the morphology of core-shell microspheres were studied. The morphology, chemical composition and phase transformation were characterized by SEM, EDS, TEM, FT-IR and XRD. The results show that after reaction for 4h at 200℃, SiO2 completely coated PSN forms a core-shell microsphere with rough surface when the mass ratio of SiO2 and PSN is 1:4; when pyrolysis temperature is at 800-1200℃, amorphous SiO2/SiCN core-shell ceramic microspheres are prepared; at 1400℃, the amorphous phase partially crystallizes to produce SiO2, SiC and Si3N4 phase.

  13. Neutron tolerance of advanced SiC-fiber/CVI-SiC composites

    International Nuclear Information System (INIS)

    Katoh, Y.; Kohyama, A.; Snead, L.L.; Hinoki, T.; Hasegawa, A.

    2003-01-01

    Fusion blankets employing a silicon carbide (SiC) fiber-reinforced SiC matrix composite (SiC/SiC composite) as the structural material provide attractive features represented by high cycle efficiency and extremely low induced radioactivity. Recent advancement in processing and utilization techniques and application studies in ceramic gas turbine and advanced transportation systems, SiC/SiC composites are steadily getting matured as industrial materials. Reference SiC/SiC composites for fusion structural applications have been produced by a forced-flow chemical vapor infiltration (FCVI) method using conventional and advanced near-stoichiometric SiC fibers and extensively evaluated primarily in Japan-US collaborative JUPITER program. In this work, effect of neutron irradiation at elevated temperatures on mechanical property of these composites is characterized. Unlike in conventional SiC/SiC composites, practically no property degradation was identified in advanced composites with a thin carbon interphase by a neutron fluence level of approximately 8dpa at 800C. (author)

  14. Time-resolved photoluminescence of SiOx encapsulated Si

    Science.gov (United States)

    Kalem, Seref; Hannas, Amal; Österman, Tomas; Sundström, Villy

    Silicon and its oxide SiOx offer a number of exciting electrical and optical properties originating from defects and size reduction enabling engineering new electronic devices including resistive switching memories. Here we present the results of photoluminescence dynamics relevant to defects and quantum confinement effects. Time-resolved luminescence at room temperature exhibits an ultrafast decay component of less than 10 ps at around 480 nm and a slower component of around 60 ps as measured by streak camera. Red shift at the initial stages of the blue luminescence decay confirms the presence of a charge transfer to long lived states. Time-correlated single photon counting measurements revealed a life-time of about 5 ns for these states. The same quantum structures emit in near infrared close to optical communication wavelengths. Nature of the emission is described and modeling is provided for the luminescence dynamics. The electrical characteristics of metal-oxide-semiconductor devices were correlated with the optical and vibrational measurement results in order to have better insight into the switching mechanisms in such resistive devices as possible next generation RAM memory elements. ``This work was supported by ENIAC Joint Undertaking and Laser-Lab Europe''.

  15. Effects of SiC amount on phase compositions and properties of Ti3SiC2-based composites

    Institute of Scientific and Technical Information of China (English)

    蔡艳芝; 殷小玮; 尹洪峰

    2015-01-01

    The phase compositions and properties of Ti3SiC2-based composites with SiC addition of 5%−30% in mass fraction fabricated by in-situ reaction and hot pressing sintering were studied. SiC addition effectively prevented TiC synthesis but facilitated SiC synthesis. The Ti3SiC2/TiC−SiC composite had better oxidation resistance when SiC added quantity reached 20% but poorer oxidation resistance with SiC addition under 15%than Ti3SiC2/TiC composite at higher temperatures. There were more than half of the original SiC and a few Ti3SiC2 remaining in Ti3SiC2/TiC−SiC with 20% SiC addition, but all constituents in Ti3Si2/TiC composite were oxidized after 12 h in air at 1500 °C. The oxidation scale thickness of TS30, 1505.78μm, was near a half of that of T, 2715μm, at 1500 °C for 20 h. Ti3SiC2/TiC composite had a flexural strength of 474 MPa, which was surpassed by Ti3SiC2/TiC−SiC composites when SiC added amount reached 15%. The strength reached the peak of 518 MPa at 20%SiC added amount.

  16. Investigation on fabrication of SiC/SiC composite as a candidate material for fuel sub-assembly

    International Nuclear Information System (INIS)

    Lee, Jae-Kwang; Naganuma, Masayuki; Park, Joon-Soo; Kohyama, Akira

    2005-01-01

    The possibility of SiC/SiC (Silicon carbide fiber reinforced Silicon carbide) composites application for fuel sub-assembly of Fast Breeder Reactor was investigated. To select a raw material of SiC/SiC composites, a few kinds of SiC nano powder was estimated by SEM observation and XRD analysis. Furthermore, SiC monolithic was sintered from them and estimated by flexural test. SiC nano-powder which showed good sinterability, it was used for fabrication of SiC/SiC composites by Hot Pressing method. From the sintering condition of 1800, 1820degC temperature and 15, 20 MPa pressure, SiC/SiC composite was fabricated and then estimated by tensile test. SiC/SiC composite, which made by 1820degC and 20 MPa condition, showed the highest mechanical strength by the monotonic tensile test. SiC/SiC composite, which made by 1800degC and 15 MPa condition, showed a stable fracture behavior at the monotonic and cyclic tensile test. And then, the hoop stress of ideal model of SiC/SiC composites was discussed. It was confirmed that applicability of SiC/SiC composites by Hot Pressing method for fuel sub-assembly structural material. To make it real attractive one, to maintain the reliability and safety as a high temperature structural material, the design and process study on SiC/Sic composites material will be continued. (author)

  17. Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

    International Nuclear Information System (INIS)

    Pi, X.D.; Coleman, P.G.; Harding, R.; Davies, G.; Gwilliam, R.M.; Sealy, B.J.

    2003-01-01

    Positron annihilation spectroscopy has been employed to study changes in the interface region between nanocrystalline Si and SiO 2 , following annealing between 400 deg. C and 900 deg. C in nitrogen or oxygen. With the support of photoluminescence spectroscopy we find that nitrogen and oxygen are trapped in voids at the interface at low temperatures. At temperatures above 700 deg. C both nitrogen and oxygen react with Si nanocrystals, and the resulting volume increase introduces stress in the SiO 2 matrix which is relaxed by the shrinkage of its intrinsic open volume. Oxygen appears to enhance Si diffusion in SiO 2 so that the agglomeration of Si nanocrystals occurs more readily during annealing in oxygen than in nitrogen

  18. Thickness dependent formation and properties of GdSi2/Si(100) interfaces

    International Nuclear Information System (INIS)

    Peto, G.; Molnar, G.; Dozsa, L.; Horvath, Z.E.; Horvath, Zs.J.; Zsoldos, E.; Dimitriadis, C.A.; Papadimitriou, L.

    2005-01-01

    Epitaxial and polycrystalline orthorhombic GdSi 2 films were grown on Si(100) substrates by solid phase reaction between Si and Gd films at different thicknesses of the Gd film. The most important property of these GdSi 2 /Si interfaces was defect formation. This was investigated by studying the properties of the Schottky barriers by means of current voltage and capacitance-voltage characteristics, deep level transient spectroscopy by double crystal X-ray diffractometry, and transmission electron microscopy. Epitaxial growth of the silicide layer ensured a relatively low interface defect density (about 10 10 cm -2 ), while the non-epitaxial growth induced defects of a much higher density (about 10 12 cm -2 ). The defects generated during the silicide formation are located within a depth of about 10 nm from the GdSi 2 /Si interface. (orig.)

  19. Structural and electrical evaluation for strained Si/SiGe on insulator

    International Nuclear Information System (INIS)

    Wang Dong; Ii, Seiichiro; Ikeda, Ken-ichi; Nakashima, Hideharu; Ninomiya, Masaharu; Nakamae, Masahiko; Nakashima, Hiroshi

    2006-01-01

    Three strained Si/SiGe on insulator wafers having different Ge fractions were evaluated using dual-metal-oxide-semiconductor (dual-MOS) deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM) methods. The interface of SiGe/buried oxide (BOX) shows roughness less than 1 nm by high resolution TEM observation. The interface states densities (D it ) of SiGe/BOX are approximately 1 x 10 12 cm -2 eV -1 , which is approximately one order of magnitude higher than that of Si/BOX in a Si on insulator wafer measured as reference by the same method of dual-MOS DLTS. The high D it of SiGe/BOX is not due to interface roughness but due to Ge atoms. The threading dislocations were also clearly observed by TEM and were analyzed

  20. Ge nanocrystals embedded in ultrathin Si3N4 multilayers with SiO2 barriers

    Science.gov (United States)

    Bahariqushchi, R.; Gundogdu, Sinan; Aydinli, A.

    2017-04-01

    Multilayers of germanium nanocrystals (NCs) embedded in thin films of silicon nitride matrix separated with SiO2 barriers have been fabricated using plasma enhanced chemical vapor deposition (PECVD). SiGeN/SiO2 alternating bilayers have been grown on quartz and Si substrates followed by post annealing in Ar ambient from 600 to 900 °C. High resolution transmission electron microscopy (HRTEM) as well as Raman spectroscopy show good crystallinity of Ge confined to SiGeN layers in samples annealed at 900 °C. Strong compressive stress for SiGeN/SiO2 structures were observed through Raman spectroscopy. Size, as well as NC-NC distance were controlled along the growth direction for multilayer samples by varying the thickness of bilayers. Visible photoluminescence (PL) at 2.3 and 3.1 eV with NC size dependent intensity is observed and possible origin of PL is discussed.