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Sample records for si pin photodiode

  1. Reliability studies on Si PIN photodiodes under Co-60 gamma radiation

    Energy Technology Data Exchange (ETDEWEB)

    Prabhakara Rao, Y. P. [Integrated Circuits Division, Bharat Electronics Limited, Bangalore, Karnataka-560013 (India) and Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore, Karnataka-570006 (India); Praveen, K. C.; Gnana Prakash, A. P. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore, Karnataka-570006 (India); Rani, Y. Rejeena [Integrated Circuits Division, Bharat Electronics Limited, Bangalore, Karnataka-560013 (India)

    2013-02-05

    Silicon PIN photodiodes were fabricated with 250 nm SiO{sub 2} antireflective coating (ARC). The changes in the electrical characteristics, capacitance-voltage characteristics and spectral response after gamma irradiation are systematically studied to estimate the radiation tolerance up to 10 Mrad. The different characteristics studied in this investigation demonstrate that Si PIN photodiodes are suitable for high radiation environment.

  2. 75 MeV boron ion irradiation studies on Si PIN photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Prabhakara Rao, Y.P.; Praveen, K.C. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India); Rejeena Rani, Y. [Integrated Circuits Division, Bharat Electronics Limited, Bangalore 560013, Karnataka (India); Tripathi, Ambuj [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Gnana Prakash, A.P., E-mail: gnanap@hotmail.com [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore 570006 (India)

    2013-12-01

    The highly sensitive silicon PIN photodiodes were fabricated to use in radiation environments. The Si PIN photodiodes are coated with 150 nm silicon dioxide (SiO{sub 2}) as anti-reflective (AR) coating. The presence of AR coating on the performance of irradiated PIN photodiodes is studied up to a total dose of 10 Mrad. The effects of 75 MeV boron (B{sup 5+}) ions and {sup 60}Co gamma radiation on the I–V, C–V and spectral responses of PIN photodiodes were studied systematically to understand the radiation tolerance of the devices. The 75 MeV B{sup 5+} irradiation results are compared with {sup 60}Co gamma irradiated results in the same dose range for 1 mm × 1 mm and 10 mm × 10 mm active area PIN photodiodes. The irradiation results show that the ion irradiated PIN photodiodes show more degradation when compared {sup 60}Co gamma irradiated devices. The irradiation results are presented in this paper and the possible mechanism behind the degradation of photodiodes is also discussed in the paper.

  3. Simulations of Si-PIN photodiode based detectors for underground explosives enhanced by ammonium nitrate

    Science.gov (United States)

    Yücel, Mete; Bayrak, Ahmet; Yücel, Esra Barlas; Ozben, Cenap S.

    2018-02-01

    Massive Ammonium Nitrate (NH4-NO3) based explosives buried underground are commonly used in terror attacks. These explosives can be detected using neutron scattering method with some limitations. Simulations are very useful tools for designing a possible detection system for these kind of explosives. Geant4 simulations were used for generating neutrons at 14 MeV energy and tracking them through the scattering off the explosive embedded in soil. Si-PIN photodiodes were used as detector elements in the design for their low costs and simplicity for signal readout electronics. Various neutron-charge particle converters were applied on to the surface of the photodiodes to increase the detection efficiency. Si-PIN photodiodes coated with 6LiF provided the best result for a certain energy interval. Energy depositions in silicon detector from all secondary particles generated including photons were taken into account to generate a realistic background. Humidity of soil, one of the most important parameter for limiting the detection, was also studied.

  4. Performance test of Si PIN photodiode line scanner for thermal neutron detection

    Energy Technology Data Exchange (ETDEWEB)

    Totsuka, Daisuke, E-mail: totsuka@imr.tohoku.ac.jp [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Nihon Kessho Kogaku Co., Ltd., 810-5 Nobe-cho Tatebayashi, Gunma 374-0047 (Japan); Yanagida, Takayuki [New Industry Creation Hatchery Center (NICHe) 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan); Fukuda, Kentaro; Kawaguchi, Noriaki [Tokuyama Corp., 3 Shibuya Shibuya-ku, Tokyo 150-8383 (Japan); Fujimoto, Yutaka [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Pejchal, Jan [Institute of Physics AS CR, Cukrovarnicka 10, Prague 6, 162-53 (Czech Republic); Yokota, Yuui [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Yoshikawa, Akira [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); New Industry Creation Hatchery Center (NICHe) 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan)

    2011-12-11

    Thermal neutron imaging using Si PIN photodiode line scanner and Eu-doped LiCaAlF{sub 6} crystal scintillator has been developed. The pixel dimensions of photodiode are 1.18 mm (width) Multiplication-Sign 3.8 mm (length) with 0.4 mm gap and the module has 192 channels in linear array. The emission peaks of Eu-doped LiCaAlF{sub 6} after thermal neutron excitation are placed at 370 and 590 nm, and the corresponding photon sensitivities of photodiode are 0.04 and 0.34 A/W, respectively. Polished scintillator blocks with a size of 1.18 mm (width) Multiplication-Sign 3.8 mm (length) Multiplication-Sign 5.0 mm (thickness) were wrapped by several layers of Teflon tapes as a reflector and optically coupled to the photodiodes by silicone grease. JRR-3 MUSASI beam line emitting 13.5 meV thermal neutrons with the flux of 8 Multiplication-Sign 10{sup 5} n/cm{sup 2} s was used for the imaging test. As a subject for imaging, a Cd plate was moved at the speed of 50 mm/s perpendicular to the thermal neutron beam. Analog integration time was set to be 416.6 {mu}s, then signals were converted by a delta-sigma A/D converter. After the image processing, we successfully obtained moving Cd plate image under thermal neutron irradiation using PIN photodiode line scanner coupled with Eu-doped LiCaAlF{sub 6} scintillator.

  5. Performance test of Si PIN photodiode line scanner for thermal neutron detection

    International Nuclear Information System (INIS)

    Totsuka, Daisuke; Yanagida, Takayuki; Fukuda, Kentaro; Kawaguchi, Noriaki; Fujimoto, Yutaka; Pejchal, Jan; Yokota, Yuui; Yoshikawa, Akira

    2011-01-01

    Thermal neutron imaging using Si PIN photodiode line scanner and Eu-doped LiCaAlF 6 crystal scintillator has been developed. The pixel dimensions of photodiode are 1.18 mm (width)×3.8 mm (length) with 0.4 mm gap and the module has 192 channels in linear array. The emission peaks of Eu-doped LiCaAlF 6 after thermal neutron excitation are placed at 370 and 590 nm, and the corresponding photon sensitivities of photodiode are 0.04 and 0.34 A/W, respectively. Polished scintillator blocks with a size of 1.18 mm (width)×3.8 mm (length)×5.0 mm (thickness) were wrapped by several layers of Teflon tapes as a reflector and optically coupled to the photodiodes by silicone grease. JRR-3 MUSASI beam line emitting 13.5 meV thermal neutrons with the flux of 8×10 5 n/cm 2 s was used for the imaging test. As a subject for imaging, a Cd plate was moved at the speed of 50 mm/s perpendicular to the thermal neutron beam. Analog integration time was set to be 416.6 μs, then signals were converted by a delta-sigma A/D converter. After the image processing, we successfully obtained moving Cd plate image under thermal neutron irradiation using PIN photodiode line scanner coupled with Eu-doped LiCaAlF 6 scintillator.

  6. Application of a radiation detector in the interdisciplinary study. 1. Portable fluorescent X-ray analysis using the Si-PIN photodiode

    International Nuclear Information System (INIS)

    Ito, Yutaka

    2000-01-01

    As a semiconductor used for X-ray detector has excellent resolution, it must be cooled by liquid nitrogen at its use, which is a limitation on its actual use and applications. Then, a compound detector with wider bandwidth such as CdTe and HgI 2 has conventionally been used to attempt to use the detector at room temperature. Here was adopted an Si-PIN photodiode for a representative small type semiconductor detector unnecessary for liquid nitrogen, to introduce small and portable fluorescent X-ray analyzer for its application. As Si-PIN can work at room temperature, it has large leak current and insufficiently spread empty phase, so it is used by cooling due to Peltier element and so on. Then, here was used an X-ray detector, XR-100CR of AMPTEK Inc. composed of Si-PIN photodiode and a Pre-AMP. And, for a portable fluorescent X-ray analyzer, the Si-PIN photodiode detector of AMPTEK Inc., and a closely sealed small radiation source of 50 μ Ci 241 Am for excitation of X-ray in specimen were used. Its working principle consists of excitation of elements in a specimen with X- and gamma-ray from 241 Am, and detection of emitted fluorescent X-ray with Si-PIN photodiode. (G.K.)

  7. Waveguide-integrated vertical pin photodiodes of Ge fabricated on p+ and n+ Si-on-insulator layers

    Science.gov (United States)

    Ito, Kazuki; Hiraki, Tatsurou; Tsuchizawa, Tai; Ishikawa, Yasuhiko

    2017-04-01

    Vertical pin structures of Ge photodiodes (PDs) integrated with Si optical waveguides are fabricated by depositing Ge epitaxial layers on Si-on-insulator (SOI) layers, and the performances of n+-Ge/i-Ge/p+-SOI PDs are compared with those of p+-Ge/i-Ge/n+-SOI PDs. Both types of PDs show responsivities as high as 1.0 A/W at 1.55 µm, while the dark leakage current is different, which is consistent with previous reports on free-space PDs formed on bulk Si wafers. The dark current of the p+-Ge/i-Ge/n+-SOI PDs is higher by more than one order of magnitude. Taking into account the activation energies for dark current as well as the dependence on PD area, the dark current of the n+-Ge/i-Ge/p+-SOI PDs is dominated by the thermal generation of carriers via mid-gap defect levels in Ge, while for the p+-Ge/i-Ge/n+-SOI PDs, the dark current is ascribed to not only thermal generation but also other mechanisms such as locally formed conduction paths.

  8. A compact 16-module camera using 64-pixel CsI(Tl)/Si p-i-n photodiode imaging modules

    Science.gov (United States)

    Choong, W.-S.; Gruber, G. J.; Moses, W. W.; Derenzo, S. E.; Holland, S. E.; Pedrali-Noy, M.; Krieger, B.; Mandelli, E.; Meddeler, G.; Wang, N. W.; Witt, E. K.

    2002-10-01

    We present a compact, configurable scintillation camera employing a maximum of 16 individual 64-pixel imaging modules resulting in a 1024-pixel camera covering an area of 9.6 cm/spl times/9.6 cm. The 64-pixel imaging module consists of optically isolated 3 mm/spl times/3 mm/spl times/5 mm CsI(Tl) crystals coupled to a custom array of Si p-i-n photodiodes read out by a custom integrated circuit (IC). Each imaging module plugs into a readout motherboard that controls the modules and interfaces with a data acquisition card inside a computer. For a given event, the motherboard employs a custom winner-take-all IC to identify the module with the largest analog output and to enable the output address bits of the corresponding module's readout IC. These address bits identify the "winner" pixel within the "winner" module. The peak of the largest analog signal is found and held using a peak detect circuit, after which it is acquired by an analog-to-digital converter on the data acquisition card. The camera is currently operated with four imaging modules in order to characterize its performance. At room temperature, the camera demonstrates an average energy resolution of 13.4% full-width at half-maximum (FWHM) for the 140-keV emissions of /sup 99m/Tc. The system spatial resolution is measured using a capillary tube with an inner diameter of 0.7 mm and located 10 cm from the face of the collimator. Images of the line source in air exhibit average system spatial resolutions of 8.7- and 11.2-mm FWHM when using an all-purpose and high-sensitivity parallel hexagonal holes collimator, respectively. These values do not change significantly when an acrylic scattering block is placed between the line source and the camera.

  9. Radon measurements with a PIN photodiode

    International Nuclear Information System (INIS)

    Martin-Martin, A.; Gutierrez-Villanueva, J.L.; Munoz, J.M.; Garcia-Talavera, M.; Adamiec, G.; Iniguez, M.P.

    2006-01-01

    Silicon photodiodes are well suited to detect alphas coming from different sources as neutron reactions or radon daughters. In this work a radon in air detecting device, using an 18x18 mm silicon PIN photodiode is studied. The ionized airborne decay products formed during radon diffusion were focused by an accelerating high voltage to the PIN surface. Several conducting rings were disposed inside a cylindrical PVC vessel in such a way that they reproduced the electric field created by a punctual charge located behind PIN position. Alpha spectra coming from the neutral and ionized species deposited on the PIN surface, dominated by 218 Po and 214 Po progeny peaks, were recorded for varying conditions. Those include radon concentration from a Pylon source, high voltage (thousands of volts) and PIN inverse bias voltage. Different parameters such as temperature and humidity were also registered during data acquisition. The increase in the particle collection efficiency with respect to zero electric field was compared with the corresponding to a parallel plates configuration. A discussion is made in terms of the most appropriate voltages for different radon concentrations

  10. Panoramic irradiator dose mapping with pin photodiodes

    International Nuclear Information System (INIS)

    Ferreira, Danilo Cardenuto; Napolitano, Celia Marina; Bueno, Carmen Cecilia

    2011-01-01

    In this work we study the possibility of using commercial silicon PIN photodiodes (Siemens, SFH 00206) for dose mapping in the Panoramic Irradiator facility at IPEN-CNEN/SP. The chosen photodiode, that is encased in 1.2 mm thickness polymer layer, displays promising dosimetric characteristics such as small size (sensitive area of 7.00 mm 2 ), high sensitivity and low dark current (≅ 300 pA, at 0 V) together with low-cost and wide availability. The Panoramic facility is an irradiator Type II with absorbed dose certificated by International Dose Assurance Service (IDAS) offered by the International Agency Energy Atomic (IAEA). The charge registered by the diode as a function of the absorbed dose was in excellent agreement with that one calibrated by IDAS. Besides this, the easy handling and fast response of the SFH00206 diode compared to Fricke chemical dosimeters encouraged us to perform dose mapping around the source. (author)

  11. Alpha particles spectrometer with photodiode PIN

    International Nuclear Information System (INIS)

    Chacon R, A.; Hernandez V, R.; Hernandez D, V. M.; Vega C, H. R.; Ramirez G, J.

    2009-10-01

    The radiation propagates in form of electromagnetic waves or corpuscular radiation; if the radiation energy causes ionization in environment that crosses it is considered ionizing radiation. To detect radiation several detectors types are used, if the radiation are alpha particles are used detectors proportional type or trace elements. In this work the design results, construction and tests of an alpha particles spectrometer are presented, which was designed starting from a photodiode PIN type. The system design was simulated with a code for electronic circuits. With results of simulation phase was constructed the electronic phase that is coupled to a multichannel analyzer. The resulting electronic is evaluated analyzing the electronic circuit performance before an alphas triple source and alpha radiation that produce two smoke detectors of domestic use. On the tests phase we find that the system allows obtain, in a multichannel, the pulses height spectrum, with which we calibrate the system. (Author)

  12. Gamma ray spectroscopy and timing using LSO and PIN photodiodes

    International Nuclear Information System (INIS)

    Moses, W.W.; Derenzo, S.E.; Melcher, C.L.; Manente, R.A.

    1994-11-01

    The high density, high light output, and short decay time of LSO (lutetium orthosilicate, Lu 2 SiO 5 :Ce) make it an attractive scintillator for gamma ray spectroscopy. The low cost, small size, high quantum efficiency, and ruggedness of silicon photodiodes make them attractive photodetectors for this same application, although their high noise (Compared to a photomultiplier tube) reduces their appeal. In this work the authors measure the gamma ray energy resolution, timing accuracy, and conversion factor from gamma energy to number of electron-hole pairs produced with a 3 x 3 x 22 mm 3 LSO scintillator crystal read out with a 3 x 3 mm 2 silicon PIN photodiode. When the detector is excited with 511 keV photons, a photopeak centered at 1,940 e - with 149 keV fwhm is observed and a timing signal with 35 ns fwhm jitter is produced. When the detector is excited with 1,275 keV photons, a photopeak centered at 4,910 e - with 149 keV fwhm is observed and a timing signal with 25 ns fwhm jitter is produced. While these performance measures are inferior to those obtained with photomultiplier tubes, they are acceptable for some applications

  13. Fast neutron damage of silicon pin photodiodes

    International Nuclear Information System (INIS)

    Dabrowski, W.; Korbel, K.; Skoczen, A.

    1990-01-01

    A Hamamatsu Photonics photodiode S1723 was tested with respect to the fast neutron radiation. The device was irradiated with neutrons of energies in the range of 0.5 MeV to 12 MeV from a Po-Be source. The irradiation was performed in several steps starting from the relatively low fluence of 2.5 x 10 10 n x cm -2 . The following characteristics were measured: leakage current vs bias voltage, capacitance vs bias voltage and vs frequency, noise vs time constant of a quasigaussian shaper and spectral density of noise. Significant changes of the leakage current and of the noise were observed at the fluence of neutrons as low as 2.5 x 10 10 n x cm -2 . 8 figs., 3 tabs., 15 refs. (author)

  14. 20 Gbps operation of membrane-based GaInAs/InP waveguide-type p-i-n photodiode bonded on Si substrate

    Science.gov (United States)

    Gu, Zhichen; Inoue, Daisuke; Amemiya, Tomohiro; Nishiyama, Nobuhiko; Arai, Shigehisa

    2018-02-01

    A GaInAs/InP waveguide-type p-i-n membrane photodetector is shown to be a strong candidate for on-chip optical interconnection. A responsivity of 0.95 A/W is estimated for a device length of 30 µm. The 3 dB cutoff frequency is measured to be 13.3 GHz at a reverse bias of 3 V, which is in good agreement with the observed clear eye opening pattern up to 20 Gbps for a non-return-to-zero signal. Moreover, a bit error rate of less than 1 × 10-9 is obtained at data rates of 20 and 10 Gbps with input powers of -10 and -13 dBm, respectively.

  15. An iterative method applied to optimize the design of PIN photodiodes for enhanced radiation tolerance and maximum light response

    International Nuclear Information System (INIS)

    Cedola, A.P.; Cappelletti, M.A.; Casas, G.; Peltzer y Blanca, E.L.

    2011-01-01

    An iterative method based on numerical simulations was developed to enhance the proton radiation tolerance and the responsivity of Si PIN photodiodes. The method allows to calculate the optimal values of the intrinsic layer thickness and the incident light wavelength, in function of the light intensity and the maximum proton fluence to be supported by the device. These results minimize the effects of radiation on the total reverse current of the photodiode and maximize its response to light. The implementation of the method is useful in the design of devices whose operation point should not suffer variations due to radiation.

  16. Continuous Holdup Measurements with Silicon P-I-N Photodiodes

    International Nuclear Information System (INIS)

    Bell, Z.W.; Oberer, R.B.; Williams, J.A.; Smith, D.E.; Paulus, M.J.

    2002-01-01

    We report on the behavior of silicon P-I-N photodiodes used to perform holdup measurements on plumbing. These detectors differ from traditional scintillation detectors in that no high-voltage is required, no scintillator is used (gamma and X rays are converted directly by the diode), and they are considerably more compact. Although the small size of the diodes means they are not nearly as efficient as scintillation detectors, the diodes' size does mean that a detector module, including one or more diodes, pulse shaping electronics, analog-to-digital converter, embedded microprocessor, and digital interface can be realized in a package (excluding shielding) the size of a pocket calculator. This small size, coupled with only low-voltage power requirement, completely solid-state realization, and internal control functions allows these detectors to be strategically deployed on a permanent basis, thereby reducing or eliminating the need for manual holdup measurements. In this paper, we report on the measurement of gamma and X rays from 235 U and 238 U contained in steel pipe. We describe the features of the spectra, the electronics of the device and show how a network of them may be used to improve estimates of inventory in holdup

  17. Alpha particles spectrometer with photodiode PIN; Espectrometro de particulas alfa con fotodiodo PIN

    Energy Technology Data Exchange (ETDEWEB)

    Chacon R, A.; Hernandez V, R.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidades Academicas de Estudios Nucleares e Ingenieria Electrica, Calle Cipres No. 10, Fracc. La Penuela, 09869 Zacatecas (Mexico); Ramirez G, J. [Instituto Nacional de Estadistica Geografia e Informatica, Direccion General de Innovacion y Tecnologia de Informacion, Av. Heroes de Nacozari Sur 2301, Fracc. Jardines del Parque, 20276 Aguascalientes (Mexico)], e-mail: achruiz@hotmail.com

    2009-10-15

    The radiation propagates in form of electromagnetic waves or corpuscular radiation; if the radiation energy causes ionization in environment that crosses it is considered ionizing radiation. To detect radiation several detectors types are used, if the radiation are alpha particles are used detectors proportional type or trace elements. In this work the design results, construction and tests of an alpha particles spectrometer are presented, which was designed starting from a photodiode PIN type. The system design was simulated with a code for electronic circuits. With results of simulation phase was constructed the electronic phase that is coupled to a multichannel analyzer. The resulting electronic is evaluated analyzing the electronic circuit performance before an alphas triple source and alpha radiation that produce two smoke detectors of domestic use. On the tests phase we find that the system allows obtain, in a multichannel, the pulses height spectrum, with which we calibrate the system. (Author)

  18. Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes

    Directory of Open Access Journals (Sweden)

    E. Kasper

    2012-01-01

    Full Text Available Room temperature direct band gap emission is observed for Si-substrate-based Ge p-i-n heterojunction photodiode structures operated under forward bias. Comparisons of electroluminescence with photoluminescence spectra allow separating emission from intrinsic Ge (0.8 eV and highly doped Ge (0.73 eV. Electroluminescence stems from carrier injection into the intrinsic layer, whereas photoluminescence originates from the highly n-doped top layer because the exciting visible laser wavelength is strongly absorbed in Ge. High doping levels led to an apparent band gap narrowing from carrier-impurity interaction. The emission shifts to higher wavelengths with increasing current level which is explained by device heating. The heterostructure layer sequence and the light emitting device are similar to earlier presented photodetectors. This is an important aspect for monolithic integration of silicon microelectronics and silicon photonics.

  19. Application of PIN photodiodes on the detection of X-rays generated in an electron accelerator

    International Nuclear Information System (INIS)

    Mondragon-Contreras, L.; Ramirez-Jimenez, F.J.; Garcia-Hernandez, J.M.; Torres-Bribiesca, M.A.; Lopez-Callejas, R.; Aguilera-Reyes, E.F.; Pena-Eguiluz, R.; Lopez-Valdivia, H.; Carrasco-Abrego, H.

    2009-01-01

    PIN photodiodes are used in a novel application for the determination, within the energy range from 90 to 485 keV, of the intensity of X-rays generated by an experimental electron accelerator. An easily assembled X-ray monitor has been built with a low-cost PIN photodiode and operational amplifiers. The output voltage signal obtained from this device can be related to the electron beam current and the accelerating voltage of the accelerator in order to estimate the dose rate delivered by bremsstrahlung.

  20. Properties of the photodiode PiN as neutron detector

    International Nuclear Information System (INIS)

    Adamiec, G.; Iniguez, M.P.; Lorente, A.; Gallego, E.; Voytchev, M.

    2005-01-01

    The photodiode can be used to measure the ambient dose equivalent for an Am-Be source, as well placed in a paraffin sphere with LiF 6 converter as nude with a PE converter. The ratio between the counting rate and the ambient dose equivalent is linear in the two cases. The sensitivity of the diode with the converter 6 LiF is evaluated to 8.4 shocks by micro sievert by square centimeter of active surface of diode. The photodiode with the PE converter has a sensitivity lower of 2.1 shocks by micro sievert by square centimeter (for the Am-Be source) of active surface of diode. About the disadvantages, the disadvantage of photodiode inside the paraffin sphere is its size and weight; the disadvantage of the diode with the PE converter is its sensitivity to the orientation of the neutron flux and the necessity to calibrate for the source type. (N.C.)

  1. Radiation effects in the Si-PIN detector on the Near Earth Asteroid Rendezvous mission

    CERN Document Server

    Starr, R; Evans, L G; Floyd, S R; McClanahan, T P; Trombka, J I; Goldsten, J O; Maurer, R H; McNutt, R L; Roth, D R

    1999-01-01

    A Si-PIN photodiode is being used as a solar X-ray monitor on the X-ray/gamma-ray spectrometer experiment which is flying on the Near Earth Asteroid Rendezvous spacecraft. Since its launch in February 1996 this photodiode has experienced several brief failures. These anomalies and other performance characteristics will be described. Efforts to reproduce these failures in ground tests with flight spare equipment will also be discussed.

  2. Evaluation of gamma dose effect on PIN photodiode using analytical model

    Science.gov (United States)

    Jafari, H.; Feghhi, S. A. H.; Boorboor, S.

    2018-03-01

    The PIN silicon photodiodes are widely used in the applications which may be found in radiation environment such as space mission, medical imaging and non-destructive testing. Radiation-induced damage in these devices causes to degrade the photodiode parameters. In this work, we have used new approach to evaluate gamma dose effects on a commercial PIN photodiode (BPX65) based on an analytical model. In this approach, the NIEL parameter has been calculated for gamma rays from a 60Co source by GEANT4. The radiation damage mechanisms have been considered by solving numerically the Poisson and continuity equations with the appropriate boundary conditions, parameters and physical models. Defects caused by radiation in silicon have been formulated in terms of the damage coefficient for the minority carriers' lifetime. The gamma induced degradation parameters of the silicon PIN photodiode have been analyzed in detail and the results were compared with experimental measurements and as well as the results of ATLAS semiconductor simulator to verify and parameterize the analytical model calculations. The results showed reasonable agreement between them for BPX65 silicon photodiode irradiated by 60Co gamma source at total doses up to 5 kGy under different reverse voltages.

  3. Measurement of X-ray spectra by PIN photodiode: comparative study

    International Nuclear Information System (INIS)

    Costa, Paulo R.; Furquim, Tania A.C.; Herdade, Silvio B.

    1996-01-01

    Two different approaches for the evaluation of diagnostic X-ray spectra are presented : one based on a semiempirical model and other based on measurements using a silicon PIN photodiode. Measured and calculated values using typical kVp and filter combinations are compared

  4. Indium phosphide-based monolithically integrated PIN waveguide photodiode readout for resonant cantilever sensors

    Energy Technology Data Exchange (ETDEWEB)

    Siwak, N. P. [Department of Electrical and Computer Engineering, Institute for Systems Research, University of Maryland, College Park, Maryland 20742 (United States); Laboratory for the Physical Sciences, 8050 Greenmead Drive, College Park, Maryland 20740 (United States); Fan, X. Z.; Ghodssi, R. [Department of Electrical and Computer Engineering, Institute for Systems Research, University of Maryland, College Park, Maryland 20742 (United States); Kanakaraju, S.; Richardson, C. J. K. [Laboratory for the Physical Sciences, 8050 Greenmead Drive, College Park, Maryland 20740 (United States)

    2014-10-06

    An integrated photodiode displacement readout scheme for a microelectromechanical cantilever waveguide resonator sensing platform is presented. III-V semiconductors are used to enable the monolithic integration of passive waveguides with active optical components. This work builds upon previously demonstrated results by measuring the displacement of cantilever waveguide resonators with on-chip waveguide PIN photodiodes. The on-chip integration of the readout provides an additional 70% improvement in mass sensitivity compared to off-chip photodetector designs due to measurement stability and minimized coupling loss. In addition to increased measurement stability, reduced packaging complexity is achieved due to the simplicity of the readout design. We have fabricated cantilever waveguides with integrated photodetectors and experimentally characterized these cantilever sensors with monolithically integrated PIN photodiodes.

  5. Study of a PIN photodiode as an ionizing radiation detector for aerospace use

    International Nuclear Information System (INIS)

    Nogueira, S.F.L.; Claro, L.H.; Santos, J.A.; Junior, J.R.; Federico, C.A.

    2017-01-01

    This work aims to study the use of the COTS PIN photodiode with an active area of 7.5 mm 2 as an ionizing radiation detector. The tests were performed with a 60 Co source and with low activity radioisotopic sources of 60 Co, 152 Eu, 137 Cs and 241 Am. The results were obtained by analyzing the current response generated by the photodiodes as a function of an attenuated dose rate in silicon in the range of 0.55 to 11.54 Gy / h

  6. A room temperature LSO/PIN photodiode PET detector module that measures depth of interaction

    International Nuclear Information System (INIS)

    Moses, W.W.; Derenzo, S.E.; Melcher, C.L.; Manente, R.A.

    1994-11-01

    We present measurements of a 4 element PET detector module that uses a 2x2 array of 3 mm square PIN photodiodes to both measure the depth of interaction (DOI) and identify the crystal of interaction. Each photodiode is coupled to one end of a 3x3x25 mm LSO crystal, with the opposite ends of all 4 crystals attached to a single PMT that provides a timing signal and initial energy discrimination. Each LSO crystal is coated with a open-quotes lossyclose quotes reflector, so the ratio of light detected in the photodiode and PMT depends on the position of interaction in the crystal, and is used to determine this position on an event by event basis. This module is operated at +25 degrees C with a photodiode amplifier peaking time of 2 μs. When excited by a collimated beam of 511 keV photons at the photodiode end of the module (i.e. closest to the patient), the DOI resolution is 4 mm fwhm and the crystal of interaction is identified correctly 95% of the time. When excited at the opposite end of the module, the DOI resolution is 13 mm fwhm and the crystal of interaction is identified correctly 73% of the time. The channel to channel variations in performance are minimal

  7. Switching characteristic and capacitance analysis of a-Si:H pinpin photodiodes for visible range telecommunications

    Science.gov (United States)

    Fantoni, A.; Fernandes, M.; Louro, P.; Vieira, M.

    2016-05-01

    The device under study is an a-SiC:H/a-Si:H pinpin photodiodes produced by PECVD (Plasma Enhanced Chemical Vapour Deposition) and has a structure that consists of a p-i'(a-SiC:H)-n/p-i(a-Si:H)-n heterostructure with low conductivity doped layers. This device structure has been demonstrated useful in optical communications that use the WDM technique to encode multiple signals in the visible light range. We present in this work experimental results about C-V measurements of the device under complex conditions of illumination. Also it is presented an analysis based on the transient response of the device when illuminated by a pulsed light, with and without optical bias superposition. Rising and decaying times of the collected photocurrent will be outlined under the different conditions. A simulation study outlines the role played by each pin substructure on the response speed and gives some hint on the possible optimization of this device.

  8. Performance Analysis of OCDMA Based on AND Detection in FTTH Access Network Using PIN & APD Photodiodes

    Science.gov (United States)

    Aldouri, Muthana; Aljunid, S. A.; Ahmad, R. Badlishah; Fadhil, Hilal A.

    2011-06-01

    In order to comprise between PIN photo detector and avalanche photodiodes in a system used double weight (DW) code to be a performance of the optical spectrum CDMA in FTTH network with point-to-multi-point (P2MP) application. The performance of PIN against APD is compared through simulation by using opt system software version 7. In this paper we used two networks designed as follows one used PIN photo detector and the second using APD photo diode, both two system using with and without erbium doped fiber amplifier (EDFA). It is found that APD photo diode in this system is better than PIN photo detector for all simulation results. The conversion used a Mach-Zehnder interferometer (MZI) wavelength converter. Also we are study, the proposing a detection scheme known as AND subtraction detection technique implemented with fiber Bragg Grating (FBG) act as encoder and decoder. This FBG is used to encode and decode the spectral amplitude coding namely double weight (DW) code in Optical Code Division Multiple Access (OCDMA). The performances are characterized through bit error rate (BER) and bit rate (BR) also the received power at various bit rate.

  9. Amplifiers dedicated for large area SiC photodiodes

    Science.gov (United States)

    Doroz, P.; Duk, M.; Korwin-Pawlowski, M. L.; Borecki, M.

    2016-09-01

    Large area SiC photodiodes find applications in optoelectronic sensors working at special conditions. These conditions include detection of UV radiation in harsh environment. Moreover, the mentioned sensors have to be selective and resistant to unwanted signals. For this purpose, the modulation of light at source unit and the rejection of constant current and low frequency component of signal at detector unit are used. The popular frequency used for modulation in such sensor is 1kHz. The large area photodiodes are characterized by a large capacitance and low shunt resistance that varies with polarization of the photodiode and can significantly modify the conditions of signal pre-amplification. In this paper two pre-amplifiers topology are analyzed: the transimpedance amplifier and the non-inverting voltage to voltage amplifier with negative feedback. The feedback loops of both pre-amplifiers are equipped with elements used for initial constant current and low frequency signals rejections. Both circuits are analyzed and compared using simulation and experimental approaches.

  10. Ge/graded-SiGe multiplication layers for low-voltage and low-noise Ge avalanche photodiodes on Si

    Science.gov (United States)

    Miyasaka, Yuji; Hiraki, Tatsurou; Okazaki, Kota; Takeda, Kotaro; Tsuchizawa, Tai; Yamada, Koji; Wada, Kazumi; Ishikawa, Yasuhiko

    2016-04-01

    A new structure is examined for low-voltage and low-noise Ge-based avalanche photodiodes (APDs) on Si, where a Ge/graded-SiGe heterostructure is used as the multiplication layer of a separate-absorption-carrier-multiplication structure. The Ge/SiGe heterojunction multiplication layer is theoretically shown to be useful for preferentially enhancing impact ionization for photogenerated holes injected from the Ge optical-absorption layer via the graded SiGe, reflecting the valence band discontinuity at the Ge/SiGe interface. This property is effective not only for the reduction of operation voltage/electric field strength in Ge-based APDs but also for the reduction of excess noise resulting from the ratio of the ionization coefficients between electrons and holes being far from unity. Such Ge/graded-SiGe heterostructures are successfully fabricated by ultrahigh-vacuum chemical vapor deposition. Preliminary pin diodes having a Ge/graded-SiGe multiplication layer act reasonably as photodetectors, showing a multiplication gain larger than those for diodes without the Ge/SiGe heterojunction.

  11. Characteristics of fabricated si PIN-type radiation detectors on cooling temperature

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Han Soo; Jeong, Manhee; Kim, Young Soo [Korea Atomic Energy Research Institute, Jeongeup-si 580-185 (Korea, Republic of); Lee, Dong Hun [Korea Research Institute of Standards and Science, Daejeon 305-340 (Korea, Republic of); Cho, Seung Yeon [Environmental Health Center, Yonsei University, Wonju-si 1184-4 (Korea, Republic of); Ha, Jang Ho [Korea Atomic Energy Research Institute, Jeongeup-si 580-185 (Korea, Republic of)

    2015-06-01

    Si PIN photodiode radiation detectors with three different active areas (3×3 mm{sup 2}, 5×5 mm{sup 2}, and 10×10 mm{sup 2}) were designed and fabricated at the Korea Atomic Energy Research Institute (KAERI) for low energy X- and gamma-ray detection. In Si-based semiconductor radiation detectors, one of the noise sources is thermal noise, which degrades their energy resolution performance. In this study, the temperature effects on the energy resolution were investigated using a 3×3 mm{sup 2} active area PIN photodiode radiation detector using a Thermoelectric Module (TEM) from room temperature to −23 °C. Energy resolutions from 25 keV auger electrons to 81 keV gamma-ray from a Ba-133 calibration source were measured and compared at every 10 °C interval. At −23 °C, energy resolutions were improved by 15.6% at 25 keV, 4.0% at 31 keV, and 1.2% at 81 keV in comparison with resolutions at room temperature. CsI(Tl)/PIN photodiode radiation detectors were also fabricated for relatively high energy gamma-ray detection. Energy resolutions for Cs-137, Co-60, and Na-22 sources were measured and compared with the spectral responsivity.

  12. Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors

    International Nuclear Information System (INIS)

    Goiffon, V.; Virmontois, C.; Magnan, P.; Cervantes, P.; Place, S.; Estribeau, M.; Martin-Gonthier, P.; Gaillardin, M.; Girard, S.; Paillet, P.

    2012-01-01

    This paper presents an investigation of Total Ionizing Dose (TID) induced dark current sources in Pinned Photodiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed at a time enabling the direct evaluation of its contribution to the observed device degradation. By this approach, the origin of radiation induced dark current in PPD is localized on the pixel layout. The PPD peripheral shallow trench isolation does not seem to play a role in the degradation. The PPD area and a transfer gate contribution independent of the pixel dimensions appear to be the main sources of the TID induced dark current increase. This study also demonstrates that applying a negative voltage on the transfer gate during integration strongly reduces the radiation induced dark current. (authors)

  13. Characterization of total ionizing dose damage in COTS pinned photodiode CMOS image sensors

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Zujun, E-mail: wangzujun@nint.ac.cn; Ma, Wuying; Huang, Shaoyan; Yao, Zhibin; Liu, Minbo; He, Baoping; Sheng, Jiangkun; Xue, Yuan [State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an, Shaanxi 710024 (China); Liu, Jing [School of Materials Science and Engineering, Xiangtan University, Hunan (China)

    2016-03-15

    The characterization of total ionizing dose (TID) damage in COTS pinned photodiode (PPD) CMOS image sensors (CISs) is investigated. The radiation experiments are carried out at a {sup 60}Co γ-ray source. The CISs are produced by 0.18-μm CMOS technology and the pixel architecture is 8T global shutter pixel with correlated double sampling (CDS) based on a 4T PPD front end. The parameters of CISs such as temporal domain, spatial domain, and spectral domain are measured at the CIS test system as the EMVA 1288 standard before and after irradiation. The dark current, random noise, dark signal non-uniformity (DSNU), photo response non-uniformity (PRNU), overall system gain, saturation output, dynamic range (DR), signal to noise ratio (SNR), quantum efficiency (QE), and responsivity versus the TID are reported. The behaviors of the tested CISs show remarkable degradations after radiation. The degradation mechanisms of CISs induced by TID damage are also analyzed.

  14. Design and Performance of a Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias.

    Science.gov (United States)

    Stefanov, Konstantin D; Clarke, Andrew S; Ivory, James; Holland, Andrew D

    2018-01-03

    A new pinned photodiode (PPD) CMOS image sensor with reverse biased p-type substrate has been developed and characterized. The sensor uses traditional PPDs with one additional deep implantation step to suppress the parasitic reverse currents, and can be fully depleted. The first prototypes have been manufactured on an 18 µm thick, 1000 Ω·cm epitaxial silicon wafers using 180 nm PPD image sensor process. Both front-side illuminated (FSI) and back-side illuminated (BSI) devices were manufactured in collaboration with Teledyne e2v. The characterization results from a number of arrays of 10 µm and 5.4 µm PPD pixels, with different shape, the size and the depth of the new implant are in good agreement with device simulations. The new pixels could be reverse-biased without parasitic leakage currents well beyond full depletion, and demonstrate nearly identical optical response to the reference non-modified pixels. The observed excessive charge sharing in some pixel variants is shown to not be a limiting factor in operation. This development promises to realize monolithic PPD CIS with large depleted thickness and correspondingly high quantum efficiency at near-infrared and soft X-ray wavelengths.

  15. Ge/Si (100) heterojunction photodiodes fabricated from material grown by low-energy plasma-enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Osmond, Johann; Isella, Giovanni; Chrastina, Daniel; Kaufmann, Rolf; Kaenel, Hans von

    2008-01-01

    We have fabricated a series of p-i-n Ge/Si heterojunction photodetectors with different thicknesses of the intrinsic Ge layer, different doping levels of the p and n layers and different diode diameters. Epitaxial Ge was deposited on Si(100) using low-energy plasma-enhanced CVD (LEPECVD) followed by cyclic annealing. Dark current values as low as 0.04 mA/cm 2 were achieved for 1 μm thick p-i-n photodiodes on lightly doped substrates at - 1 V bias, and external quantum efficiencies of 56% at 1.30 μm and 44% at 1.55 μm for 3 μm thick p + -i-n + photodiodes on highly doped substrates under 0.5 V reverse bias. For a 30 μm diameter diode a RC frequency of 21 GHz is obtained at a reverse bias of 1 V. With such characteristics, these diodes are attractive for telecommunication and optoelectronic applications

  16. Evaluation of phase sensitive detection method and Si avalanche photodiode for radiation thermometry

    International Nuclear Information System (INIS)

    Hobbs, M J; Tan, C H; Willmott, J R

    2013-01-01

    We report the evaluation of Si avalanche photodiodes (APDs) for use in radiation thermometry as an alternative to Si photodiodes. We compared their performance when operated under phase sensitive detection (PSD), where the signal is modulated, and direct detection (DD) methods. A Si APD was compared with a Si photodiode with reference black body temperatures of 275 to 600°C, in terms of the mean output voltage and signal-to-noise ratio (SNR), measured at different APD gain values. We found that using both PSD and DD methods, the high internal gain of the Si APD achieved a lower minimum detection temperature in order to satisfy a specific minimum output voltage of the detector-preamplifier combination employed. The use of PSD over DD for the Si APD allowed for improved performance of the thermometer, with a lower minimum measurable temperature, as well as improvement in the SNR. For instance we found that at 350°C, the Si APD biased at 150 V using PSD can provide ∼ 88 times enhancement in the system SNR over that of a Si photodiode using DD. A corresponding temperature error of ±0.05°C was achieved using the APD with PSD compared to an error of ±2.75°C measured using the Si photodiode with DD.

  17. Simulation and measurement of total ionizing dose radiation induced image lag increase in pinned photodiode CMOS image sensors

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jing [School of Materials Science and Engineering, Xiangtan University, Hunan (China); State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an (China); Chen, Wei, E-mail: chenwei@nint.ac.cn [State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an (China); Wang, Zujun, E-mail: wangzujun@nint.ac.cn [State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an (China); Xue, Yuanyuan; Yao, Zhibin; He, Baoping; Ma, Wuying; Jin, Junshan; Sheng, Jiangkun; Dong, Guantao [State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an (China)

    2017-06-01

    This paper presents an investigation of total ionizing dose (TID) induced image lag sources in pinned photodiodes (PPD) CMOS image sensors based on radiation experiments and TCAD simulation. The radiation experiments have been carried out at the Cobalt −60 gamma-ray source. The experimental results show the image lag degradation is more and more serious with increasing TID. Combining with the TCAD simulation results, we can confirm that the junction of PPD and transfer gate (TG) is an important region forming image lag during irradiation. These simulations demonstrate that TID can generate a potential pocket leading to incomplete transfer.

  18. An InP/Si heterojunction photodiode fabricated by self-aligned corrugated epitaxial lateral overgrowth

    International Nuclear Information System (INIS)

    Sun, Y. T.; Omanakuttan, G.; Lourdudoss, S.

    2015-01-01

    An n-InP/p-Si heterojunction photodiode fabricated by corrugated epitaxial lateral overgrowth (CELOG) method is presented. N-InP/p-Si heterojunction has been achieved from a suitable pattern containing circular shaped openings in a triangular lattice on the InP seed layer on p-Si substrate and subsequent CELOG of completely coalesced n-InP. To avoid current path through the seed layer in the final photodiode, semi-insulating InP:Fe was grown with adequate thickness prior to n-InP growth in a low pressure hydride vapor phase epitaxy reactor. The n-InP/p-Si heterointerface was analyzed by scanning electron microscopy and Raman spectroscopy. Room temperature cross-sectional photoluminescence (PL) mapping illustrates the defect reduction effect in InP grown on Si by CELOG method. The InP PL intensity measured above the InP/Si heterojunction is comparable to that of InP grown on a native planar substrate indicating low interface defect density of CELOG InP despite of 8% lattice mismatch with Si. The processed n-InP/p-Si heterojunction photodiodes show diode characteristics from the current-voltage (I-V) measurements with a dark current density of 0.324 mA/cm 2 at a reverse voltage of −1 V. Under the illumination of AM1.5 conditions, the InP/Si heterojunction photodiode exhibited photovoltaic effect with an open circuit voltage of 180 mV, a short circuit current density of 1.89 mA/cm 2 , an external quantum efficiency of 4.3%, and an internal quantum efficiency of 6.4%. This demonstration of epitaxially grown InP/Si heterojunction photodiode will open the door for low cost and high efficiency solar cells and photonic integration of III-Vs on silicon

  19. Pin-photodiode array for the measurement of fan-beam energy and air kerma distributions of X-ray CT scanners.

    Science.gov (United States)

    Haba, Tomonobu; Koyama, Shuji; Aoyama, Takahiko; Kinomura, Yutaka; Ida, Yoshihiro; Kobayashi, Masanao; Kameyama, Hiroshi; Tsutsumi, Yoshinori

    2016-07-01

    Patient dose estimation in X-ray computed tomography (CT) is generally performed by Monte Carlo simulation of photon interactions within anthropomorphic or cylindrical phantoms. An accurate Monte Carlo simulation requires an understanding of the effects of the bow-tie filter equipped in a CT scanner, i.e. the change of X-ray energy and air kerma along the fan-beam arc of the CT scanner. To measure the effective energy and air kerma distributions, we devised a pin-photodiode array utilizing eight channels of X-ray sensors arranged at regular intervals along the fan-beam arc of the CT scanner. Each X-ray sensor consisted of two plate type of pin silicon photodiodes in tandem - front and rear photodiodes - and of a lead collimator, which only allowed X-rays to impinge vertically to the silicon surface of the photodiodes. The effective energy of the X-rays was calculated from the ratio of the output voltages of the photodiodes and the dose was calculated from the output voltage of the front photodiode using the energy and dose calibration curves respectively. The pin-photodiode array allowed the calculation of X-ray effective energies and relative doses, at eight points simultaneously along the fan-beam arc of a CT scanner during a single rotation of the scanner. The fan-beam energy and air kerma distributions of CT scanners can be effectively measured using this pin-photodiode array. Copyright © 2016 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

  20. Simulation for spectral response of solar-blind AlGaN based p-i-n photodiodes

    Science.gov (United States)

    Xue, Shiwei; Xu, Jintong; Li, Xiangyang

    2015-04-01

    In this article, we introduced how to build a physical model of refer to the device structure and parameters. Simulations for solar-blind AlGaN based p-i-n photodiodes spectral characteristics were conducted in use of Silvaco TCAD, where device structure and parameters are comprehensively considered. In simulation, the effects of polarization, Urbach tail, mobility, saturated velocities and lifetime in AlGaN device was considered. Especially, we focused on how the concentration-dependent Shockley-Read-Hall (SRH) recombination model affects simulation results. By simulating, we analyzed the effects in spectral response caused by TAUN0 and TAUP0, and got the values of TAUN0 and TAUP0 which can bring a result coincides with test results. After that, we changed their values and made the simulation results especially the part under 255 nm performed better. In conclusion, the spectral response between 200 nm and 320 nm of solar-blind AlGaN based p-i-n photodiodes were simulated and compared with test results. We also found that TAUN0 and TAUP0 have a large impact on spectral response of AlGaN material.

  1. Silicon photodiode with selective Zr/Si coating for extreme ultraviolet spectral range

    International Nuclear Information System (INIS)

    Aruev, P N; Barysheva, Mariya M; Ber, B Ya; Zabrodskaya, N V; Zabrodskii, V V; Lopatin, A Ya; Pestov, Alexey E; Petrenko, M V; Polkovnikov, V N; Salashchenko, Nikolai N; Sukhanov, V L; Chkhalo, Nikolai I

    2012-01-01

    The procedure of manufacturing silicon photodiodes with an integrated Zr/Si filter for extreme ultraviolet (EUV) spectral range is developed. A setup for measuring the sensitivity profile of detectors with spatial resolution better than 100 μm is fabricated. The optical properties of silicon photodiodes in the EUV and visible spectral ranges are investigated. Some characteristics of SPD-100UV diodes with Zr/Si coating and without it, as well as of AXUV-100 diodes, are compared. In all types of detectors a narrow region beyond the operating aperture is found to be sensitive to the visible light. (photodetectors)

  2. High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes.

    Science.gov (United States)

    Martinez, Nicholas J D; Derose, Christopher T; Brock, Reinhard W; Starbuck, Andrew L; Pomerene, Andrew T; Lentine, Anthony L; Trotter, Douglas C; Davids, Paul S

    2016-08-22

    We present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER-12, in the range from -18.3 dBm to -12 dBm received optical power into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.

  3. A compact, discrete CsI(Tl) scintillator/Si photodiode gamma camera for breast cancer imaging

    Energy Technology Data Exchange (ETDEWEB)

    Gruber, Gregory J. [Univ. of California, Berkeley, CA (United States)

    2000-01-01

    Recent clinical evaluations of scintimammography (radionuclide breast imaging) are promising and suggest that this modality may prove a valuable complement to X-ray mammography and traditional breast cancer detection and diagnosis techniques. Scintimammography, however, typically has difficulty revealing tumors that are less than 1 cm in diameter, are located in the medial part of the breast, or are located in the axillary nodes. These shortcomings may in part be due to the use of large, conventional Anger cameras not optimized for breast imaging. In this thesis I present compact single photon camera technology designed specifically for scintimammography which strives to alleviate some of these limitations by allowing better and closer access to sites of possible breast tumors. Specific applications are outlined. The design is modular, thus a camera of the desired size and geometry can be constructed from an array (or arrays) of individual modules and a parallel hole lead collimator for directional information. Each module consists of: (1) an array of 64 discrete, optically-isolated CsI(Tl) scintillator crystals 3 x 3 x 5 mm3 in size, (2) an array of 64 low-noise Si PIN photodiodes matched 1-to-1 to the scintillator crystals, (3) an application-specific integrated circuit (ASIC) that amplifies the 64 photodiode signals and selects the signal with the largest amplitude, and (4) connectors and hardware for interfacing the module with a motherboard, thereby allowing straightforward computer control of all individual modules within a camera.

  4. A compact, discrete CsI(Tl) scintillator/Si photodiode gamma camera for breast cancer imaging

    International Nuclear Information System (INIS)

    Gruber, Gregory J.

    2000-01-01

    Recent clinical evaluations of scintimammography (radionuclide breast imaging) are promising and suggest that this modality may prove a valuable complement to X-ray mammography and traditional breast cancer detection and diagnosis techniques. Scintimammography, however, typically has difficulty revealing tumors that are less than 1 cm in diameter, are located in the medial part of the breast, or are located in the axillary nodes. These shortcomings may in part be due to the use of large, conventional Anger cameras not optimized for breast imaging. In this thesis I present compact single photon camera technology designed specifically for scintimammography which strives to alleviate some of these limitations by allowing better and closer access to sites of possible breast tumors. Specific applications are outlined. The design is modular, thus a camera of the desired size and geometry can be constructed from an array (or arrays) of individual modules and a parallel hole lead collimator for directional information. Each module consists of: (1) an array of 64 discrete, optically-isolated CsI(Tl) scintillator crystals 3 x 3 x 5 mm 3 in size, (2) an array of 64 low-noise Si PIN photodiodes matched 1-to-1 to the scintillator crystals, (3) an application-specific integrated circuit (ASIC) that amplifies the 64 photodiode signals and selects the signal with the largest amplitude, and (4) connectors and hardware for interfacing the module with a motherboard, thereby allowing straightforward computer control of all individual modules within a camera

  5. Conception and modelling of photo-detection pixels. PIN photodiodes conceived in amorphous silicon for particles detection; Conception et modelisation de pixels de photodetection: Photodiodes PIN en silicium amorphe en vue de leurs utilisations comme detecteurs de particules

    Energy Technology Data Exchange (ETDEWEB)

    Negru, R

    2008-06-15

    The research done has revealed that the a-Si:H is a material ideally suited for the detection of particles, while being resistant to radiation. It also has a low manufacturing cost, is compatible with existing technology and can be deposited over large areas. Thus, despite the low local mobility of charges (30 cm{sup 2}/V/s), a-Si:H is a material of particular interest for manufacturing high-energy particle detection pixels. As a consequence of this, we have studied the feasibility of an experimental pixel stacked structure based on a-Si:H as a basic sensor element for an electromagnetic calorimeter. The structure of such a pixel consists of different components. First, a silicon PIN diode in a-Si:H is fabricated, followed by a bias resistor and a decoupling capacitor. Before such a structure is made and in order to optimize its design, it is essential to have an efficient behavioural model of the various components. Thus, our primary goal was to develop a two-dimensional physical model of the PIN diode using the SILVACO finite element calculation software. This a-Si:H PIN diode two-dimensional physical model allowed us to study the problem of crosstalk between pixels in a matrix structure of detectors. In particular, we concentrated on the leakage current and the current generated in the volume between neighbouring pixels. The successful implementation of this model in SPICE ensures its usefulness in other professional simulators and especially its integration into a complete electronic structure (PIN diode, bias resistor, decoupling capacity and low noise amplifier). Thanks to these modelling tools, we were able to simulate PIN diode structures in a-Si:H with different thicknesses and different dimensions. These simulations have allowed us to predict that the thicker structures are relevant to the design of the pixel detectors for high energy physics. Applications in astronomy, medical imaging and the analysis of the failure of silicon integrated circuits, can

  6. Light induced tunnel effect in CNT-Si photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Aramo, C., E-mail: aramo@na.infn.it [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); Ambrosio, M. [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); Bonavolontà, C. [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); Dip. di Scienze Fisiche, Università degli Studi di Napoli “Federico II”, Via Cintia 2, 80126 Napoli (Italy); Boscardin, M. [Centro per Materiali e i Microsistemi Fondazione Bruno Kessler (FBK), Via Sommarive 18, Povo di Trento, 38123 Trento (Italy); Castrucci, P. [INFN, Sezione di Roma “Tor Vergata”, Dip. di Fisica, Università degli Studi di Roma “Tor Vergata”, Via della Ricerca Scientifica 1, 00133 Roma (Italy); Crivellari, M. [Centro per Materiali e i Microsistemi Fondazione Bruno Kessler (FBK), Via Sommarive 18, Povo di Trento, 38123 Trento (Italy); De Crescenzi, M. [INFN, Sezione di Roma “Tor Vergata”, Dip. di Fisica, Università degli Studi di Roma “Tor Vergata”, Via della Ricerca Scientifica 1, 00133 Roma (Italy); De Lisio, C. [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); Dip. di Scienze Fisiche, Università degli Studi di Napoli “Federico II”, Via Cintia 2, 80126 Napoli (Italy); Fiandrini, E. [INFN, Sezione di Perugia, Dip. di Fisica, Università degli Studi di Perugia, Piazza Università 1, 06100 Perugia (Italy); and others

    2016-07-11

    Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4 V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5 V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics.

  7. Irradiation project of SiC/SiC fuel pin 'INSPIRE': Status and future plan

    International Nuclear Information System (INIS)

    Kohyama, Akira; Kishimoto, Hirotatsu

    2015-01-01

    After the March 11 Disaster in East-Japan, Research and Development towards Ensuring Nuclear Safety Enhancement for LWR becomes a top priority R and D in nuclear energy policy of Japan. The role of high temperature non-metallic materials, such as SiC/SiC, is becoming important for the advanced nuclear reactor systems. SiC fibre reinforced SiC composite has been recognised to be the most attractive option for the future, now, METI fund based project, INSPIRE, has been launched as 5-year termed project at OASIS in Muroran Institute of Technology aiming at early realisation of this system. INSPIRE is the irradiation project of SiC/SiC fuel pins aiming to accumulate material, thermal, irradiation effect data of NITE-SiC/SiC in BWR environment. Nuclear fuel inserted SiC/SiC fuel pins are planned to be installed in the Halden reactor. The project includes preparing the NITE-SiC/SiC tubes, joining of end caps, preparation of rigs to control the irradiation environment to BWR condition and the instruments to measure the condition of rigs and pins in operation. Also, basic neutron irradiation data will be accumulated by SiC/SiC coupon samples currently under irradiation in BR2. The output from this project may present the potentiality of NITE-SiC/SiC fuel cladding with the first stage fuel-cladding interaction. (authors)

  8. Conception and modelling of photo-detection pixels. PIN photodiodes conceived in amorphous silicon for particles detection

    International Nuclear Information System (INIS)

    Negru, R.

    2008-06-01

    The research done has revealed that the a-Si:H is a material ideally suited for the detection of particles, while being resistant to radiation. It also has a low manufacturing cost, is compatible with existing technology and can be deposited over large areas. Thus, despite the low local mobility of charges (30 cm 2 /V/s), a-Si:H is a material of particular interest for manufacturing high-energy particle detection pixels. As a consequence of this, we have studied the feasibility of an experimental pixel stacked structure based on a-Si:H as a basic sensor element for an electromagnetic calorimeter. The structure of such a pixel consists of different components. First, a silicon PIN diode in a-Si:H is fabricated, followed by a bias resistor and a decoupling capacitor. Before such a structure is made and in order to optimize its design, it is essential to have an efficient behavioural model of the various components. Thus, our primary goal was to develop a two-dimensional physical model of the PIN diode using the SILVACO finite element calculation software. This a-Si:H PIN diode two-dimensional physical model allowed us to study the problem of crosstalk between pixels in a matrix structure of detectors. In particular, we concentrated on the leakage current and the current generated in the volume between neighbouring pixels. The successful implementation of this model in SPICE ensures its usefulness in other professional simulators and especially its integration into a complete electronic structure (PIN diode, bias resistor, decoupling capacity and low noise amplifier). Thanks to these modelling tools, we were able to simulate PIN diode structures in a-Si:H with different thicknesses and different dimensions. These simulations have allowed us to predict that the thicker structures are relevant to the design of the pixel detectors for high energy physics. Applications in astronomy, medical imaging and the analysis of the failure of silicon integrated circuits, can also

  9. Influence of transfer gate design and bias on the radiation hardness of pinned photodiode CMOS image sensors

    International Nuclear Information System (INIS)

    Goiffon, V.; Estribeau, M.; Cervantes, P.; Molina, R.; Magnan, P.; Gaillardin, M.

    2014-01-01

    The effects of Cobalt 60 gamma-ray irradiation on pinned photodiode (PPD) CMOS image sensors (CIS) are investigated by comparing the total ionizing dose (TID) response of several transfer gate (TG) and PPD designs manufactured using a 180 nm CIS process. The TID induced variations of charge transfer efficiency (CTE), pinning voltage, equilibrium full well capacity (EFWC), full well capacity (FWC) and dark current measured on the different pixel designs lead to the conclusion that only three degradation sources are responsible for all the observed radiation effects: the pre-metal dielectric (PMD) positive trapped charge, the TG sidewall spacer positive trapped charge and, with less influence, the TG channel shallow trench isolation (STI) trapped charge. The different FWC evolutions with TID presented here are in very good agreement with a recently proposed analytical model. This work also demonstrates that the peripheral STI is not responsible for the observed degradations and thus that the enclosed layout TG design does not improve the radiation hardness of PPD CIS. The results of this study also lead to the conclusion that the TG OFF voltage bias during irradiation has no influence on the radiation effects. Alternative design and process solutions to improve the radiation hardness of PPD CIS are discussed. (authors)

  10. Performance of silicon PIN photodiodes at low temperatures and in high magnetic fields

    Czech Academy of Sciences Publication Activity Database

    Wauters, F.; Kraeva, I.S.; Tandecki, M.; Traykov, E.; Van Gorp, S.; Zákoucký, Dalibor; Severijns, N.

    2009-01-01

    Roč. 604, č. 3 (2009), s. 563-567 ISSN 0168-9002 Institutional research plan: CEZ:AV0Z10480505 Keywords : PIN-diode * beta-particle detection * Magnetic field Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.317, year: 2009

  11. Study of a PIN photodiode as an ionizing radiation detector for aerospace use; Estudo de um fotodiodo PIN como detector de radiação ionizante para uso aeroespacial

    Energy Technology Data Exchange (ETDEWEB)

    Nogueira, S.F.L.; Claro, L.H.; Santos, J.A.; Junior, J.R.; Federico, C.A., E-mail: msetephanireis@hotmail.com [Instituto de Estudos Avançados (IEAv), São José dos Campos, SP (Brazil). Divisão de Física Aplicada

    2017-07-01

    This work aims to study the use of the COTS PIN photodiode with an active area of 7.5 mm{sup 2} as an ionizing radiation detector. The tests were performed with a {sup 60}Co source and with low activity radioisotopic sources of {sup 60}Co, {sup 152}Eu, {sup 137}Cs and {sup 241}Am. The results were obtained by analyzing the current response generated by the photodiodes as a function of an attenuated dose rate in silicon in the range of 0.55 to 11.54 Gy / h.

  12. Improvement of n-ZnO/p-Si photodiodes by embedding of silver nanoparticles

    International Nuclear Information System (INIS)

    Hu, Zhan-Shuo; Hung, Fei-Yi; Chang, Shoou-Jinn; Chen, Kuan-Jen; Tseng, Yi-Wei; Huang, Bohr-Ran; Lin, Bo-Cheng; Chou, Wei-Yang; Chang, Jay

    2011-01-01

    The photo-current of n-ZnO/p-Si heterojunction photodiodes was improved by embedding Ag nanoparticles in the interface (ZnO/nano-P Ag /p-Si), and the ratio between photo- and dark-current increased by about three orders more than that of a n-ZnO/p-Si specimen. The improvement in the photo-current resulted from the light scattering of embedded Ag nanoparticles. The I–V curve of n-ZnO/p-Si degraded after thermal treatment (A-ZnO/p-Si) because the silicon robbed the oxygen from ZnO to form amorphous silicon dioxide and left an oxygen vacancy. Notably, the properties of ZnO/nano-P Ag /p-Si were better in the time-dependent photoresponse under 10 V bias. Ag nanoparticles (15–20 nm) scattered the UV light randomly and increased the probability for the absorption of ZnO to enhance the properties of the photodiode.

  13. Photoelectric characteristics of an inverse U-shape buried doping design for crosstalk suppression in pinned photodiodes

    International Nuclear Information System (INIS)

    Cao Chen; Zhang Bing; Li Xin; Wu Longsheng; Wang Junfeng

    2014-01-01

    A design of an inverse U-shape buried doping in a pinned photodiode (PPD) of CMOS image sensors is proposed for electrical crosstalk suppression between adjacent pixels. The architecture achieves no extra fill factor consumption, and proper built-in electric fields can be established according to the doping gradient created by the injections of the extremely low P-type doping buried regions in the epitaxial layer, causing the excess electrons to easily drift back to the photosensitive area rarely with a diffusion probability; the overall junction capacitance and photosensitive area extensions for a full well capacity (FWC) and internal quantum efficiency (IQE) improving are achieved by the injection of a buried N-type doping. By considering the image lag issue, the process parameters of all the injections have been precisely optimized. Optical simulation results based on the finite difference time domain method show that compared to the conventional PPD, the electrical crosstalk rate of the proposed architecture can be decreased by 60%–80% at an incident wavelength beyond 450 nm, IQE can be clearly improved at an incident wavelength between 400 and 600 nm, and the FWC can be enhanced by 107.5%. Furthermore, the image lag performance is sustained to a perfect low level. The present study provides important guidance on the design of ultra high resolution image sensors. (semiconductor devices)

  14. Temperature dependent characterization of gallium arsenide X-ray mesa p-i-n photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Lioliou, G., E-mail: G.Lioliou@sussex.ac.uk; Barnett, A. M. [Semiconductor Materials and Devices Laboratory, Department Engineering and Design, School of Engineering and Informatics, University of Sussex, Falmer, Brighton BN1 9QT (United Kingdom); Meng, X.; Ng, J. S. [Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom)

    2016-03-28

    Electrical characterization of two GaAs p{sup +}-i-n{sup +} mesa X-ray photodiodes over the temperature range 0 °C to 120 °C together with characterization of one of the diodes as an X-ray detector over the temperature range 0 °C to 60 °C is reported as part of the development of photon counting X-ray spectroscopic systems for harsh environments. The randomly selected diodes were fully etched and unpassivated. The diodes were 200 μm in diameter and had 7 μm thick i layers. The leakage current density was found to increase from (3 ± 1) nA/cm{sup −2} at 0 °C to (24.36 ± 0.05) μA/cm{sup −2} at 120 °C for D1 and from a current density smaller than the uncertainty (0.2 ± 1.2) nA/cm{sup −2} at 0 °C to (9.39 ± 0.02) μA/cm{sup −2} at 120 °C for D2 at the maximum investigated reverse bias (15 V). The best energy resolution (FWHM at 5.9 keV) was achieved at 5 V reverse bias, at each temperature; 730 eV at 0 °C, 750 eV at 20 °C, 770 eV at 40 °C, and 840 eV at 60 °C. It was found that the parallel white noise was the main source of the photopeak broadening only when the detector operated at 60 °C, at 5 V, 10 V, and 15 V reverse bias and at long shaping times (>5 μs), whereas the sum of the dielectric noise and charge trapping noise was the dominant source of noise for all the other spectra.

  15. Organic semiconductor photodiode based on indigo carmine/n-Si for optoelectronic applications

    Science.gov (United States)

    Ganesh, V.; Manthrammel, M. Aslam; Shkir, Mohd.; Yahia, I. S.; Zahran, H. Y.; Yakuphanoglu, F.; AlFaify, S.

    2018-06-01

    The fabrication of indigo carmine/n-Si photodiode has been done, and a robust dark and photocurrent-voltage ( I- V), capacitance vs. voltage ( C-V) and conductance vs. voltage ( G-V) studies were done over a wide range of applied voltage and frequencies. The surface morphology was assessed by atomic force microscope (AFM), and the grain size was measured to be about 66 nm. The reverse current increased with both increasing illumination intensity and bias potential, whereas the forward current increased exponentially with bias potential. The responsivity value was also calculated. Barrier height and ideality factor of diode were estimated through a log (I) vs log (V) plot, and obtained to be 0.843 and 4.75 eV, respectively. The Vbi values are found between 0.95 and 1.2V for frequencies ranging between 100 kHz and 1 MHz. The value of R s is found to be lower at higher frequencies which may be due to a certain distribution of localized interface states. A strong frequency and voltage dependency were observed for interface states density N ss in the present indigo carmine/n-Si photodiode, and this explained the observed capacitance and resistance variation with frequency. These results suggest that the fabricated diode has the potential to be applied in optoelectronic devices.

  16. A fully integrated optical detector with a-Si:H based color photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Watty, Krystian; Merfort, Christian; Seibel, Konstantin; Schoeler, Lars; Boehm, Markus [Institute for Microsystem Technologies (IMT), University of Siegen, Hoelderlinstr. 3, 57076 Siegen (Germany)

    2010-03-15

    The fabrication of an electrophoresis separation microchip with monolithic integrated excitation light source and variospectral photodiodes for absorption detection is presented in this paper. Microchip based separation techniques are essential elements in the development of fully integrated micro-total analysis systems ({mu}-TAS). An integrated microfluidic device, like an application specific lab-on-microchip (ALM) (Seibel et al., in: MRS Spring Meeting, San Francisco, USA, 2005 1), includes all components, necessary to perform a chemical analysis on chip and it can be used as a stand-alone unit directly at the point of sampling. Variospectral diodes based on hydrogenated amorphous silicon (a-Si:H) technology allow for advanced optical detection schemes, because the spectral sensitivity of the devices can be tailored to fit the emission of specific fluorescent markers. Important features of a-Si:H variospectral photodiodes are a high dynamic range, a bias-tunable spectral sensitivity and a very good linearity for the separation of mixed color signals. Principle of ALM device. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  17. Single photon detection in a waveguide-coupled Ge-on-Si lateral avalanche photodiode.

    Science.gov (United States)

    Martinez, Nicholas J D; Gehl, Michael; Derose, Christopher T; Starbuck, Andrew L; Pomerene, Andrew T; Lentine, Anthony L; Trotter, Douglas C; Davids, Paul S

    2017-07-10

    We examine gated-Geiger mode operation of an integrated waveguide-coupled Ge-on-Si lateral avalanche photodiode (APD) and demonstrate single photon detection at low dark count for this mode of operation. Our integrated waveguide-coupled APD is fabricated using a selective epitaxial Ge-on-Si growth process resulting in a separate absorption and charge multiplication (SACM) design compatible with our silicon photonics platform. Single photon detection efficiency and dark count rate is measured as a function of temperature in order to understand and optimize performance characteristics in this device. We report single photon detection of 5.27% at 1310 nm and a dark count rate of 534 kHz at 80 K for a Ge-on-Si single photon avalanche diode. Dark count rate is the lowest for a Ge-on-Si single photon detector in this range of temperatures while maintaining competitive detection efficiency. A jitter of 105 ps was measured for this device.

  18. A new CMOS SiGeC avalanche photo-diode pixel for IR sensing

    Science.gov (United States)

    Augusto, Carlos; Forester, Lynn; Diniz, Pedro C.

    2009-05-01

    Near-infra-red sensing with silicon is limited by the bandgap of silicon, corresponding to a maximum wavelength of absorption of 1.1 μm. A new type of CMOS sensor is presented, which uses a SiGeC epitaxial film in conjunction with novel device architecture to extend absorption into the infra-red. The SiGeC film composition and thickness determine the spectrum of absorption; in particular for SiGeC superlattices, the layer ordering to create pseudo direct bandgaps is the critical parameter. In this new device architecture, the p-type SiGeC film is grown on an active region surrounded by STI, linked to the S/D region of an adjacent NMOS, under the STI by a floating N-Well. On a n-type active, a P-I-N device is formed, and on a p-type active, a P-I-P device is formed, each sensing different regions of the spectrum. The SiGeC films can be biased for avalanche operation, as the required vertical electric field is confined to the region near the heterojunction interface, thereby not affecting the gate oxide of the adjacent NMOS. With suitable heterojunction and doping profiles, the avalanche region can also be bandgap engineered, allowing for avalanche breakdown voltages that are compatible with CMOS devices.

  19. Collective-pinning properties of superconducting a-NbxGe and a-MoxSi films

    International Nuclear Information System (INIS)

    Woerdenweber, R.

    1987-01-01

    This thesis describes a study of superconducting flux pinning in amorphous NbGe and MoSi films of various compositions and thickness. Amorphous NbGe and MoSi alloys belong to the weak-coupling type-II superconductors in the extreme dirty limit. This feature enables to determine several important superconducting parameters from well-known theoretical expressions. It is also responsible for the weak pinning, which is necessary to observe the two-dimensional collective pinning properties according to the Larkin-Ovchinnikov theory. (Auth.)

  20. Gamma-ray vulnerability of light-emitting diodes injection-laser diodes and pin-photodiodes for 1.3 μm wavelength-fiber optics

    International Nuclear Information System (INIS)

    Breuze, G.; Serre, J.

    1992-01-01

    With the increasing use of optical data links, it becomes essential to test for radiation vulnerability not only the transmission support - fiber and cable - but also fiber-end electro-optical components that could be exposed to hostile environment. Presently there is a significant number of radiation tests of optical fibers [1,2,3[. Here are only given a few results obtained on gradient index multimode fibers with and without phosphor. These data provide an important contribution to the improvement of all standard electro-optical pigtailed components working on the 1.3 μm wavelength: light-emitting diodes (LED), injection-laser diode modules (LDM) and pin-photodiodes (PD). Multicomponent LDM behaviour under CO 60 exposure was extensively tested. Hardened optical data links allow now to ensure medium data transmission rates on appreciable fiber - lengths despite medium steady - state gamma-ray exposure

  1. Visible-blind ultraviolet photodiode fabricated by UV oxidation of metallic zinc on p-Si

    International Nuclear Information System (INIS)

    Zhang, Dongyuan; Uchida, Kazuo; Nozaki, Shinji

    2015-01-01

    A UV photodiode fabricated by the UV oxidation of a metallic zinc thin film on p-Si has manifested unique photoresponse characteristics. The electron concentration found by the Hall measurement was 3 × 10 16  cm −3 , and such a low electron concentration resulted in a low visible photoluminescence. UV illumination enhances the oxidation at low temperatures and decreases the concentration of the oxygen vacancies. The I-V characteristic showed a good rectification with a four-order magnitude difference in the forward and reverse currents at 2 V, and its linear and frequency independent C −2 –V characteristic confirmed an abrupt pn junction. The photoresponse showed a visible blindness with a responsivity ratio of UV and visible light as high as 100. Such a visible-blind photoresponse was attributed to the optimum thickness of the SiO 2 formed on the Si surface during the UV oxidation at 400 °C. A lower potential barrier to holes at the ZnO/SiO 2 interface facilitates Fowler-Nordheim tunneling of the photo-generated holes during the UV illumination, while a higher potential barrier to electrons efficiently blocks transport of the photo-generated electrons to the ZnO during the visible light illumination. The presence of oxide resulted in a slow photoresponse to the turn-on and off of the UV light. A detailed analysis is presented to understand how the photo-generated carriers contribute step by step to the photocurrent. In addition to the slow photoresponse associated with the SiO 2 interfacial layer, the decay of the photocurrent was found extremely slow after turn-off of the UV light. Such a slow decay of the photocurrent is referred to as a persistent photoconductivity, which is caused by metastable deep levels. It is hypothesized that Zn vacancies form such a deep level, and that the photo-generated electrons need to overcome a thermal-energy barrier for capture. The ZnO film by the UV oxidation at 400 °C was found to be rich in oxygen and

  2. Visible-blind ultraviolet photodiode fabricated by UV oxidation of metallic zinc on p-Si

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Dongyuan; Uchida, Kazuo; Nozaki, Shinji, E-mail: nozaki@ee.uec.ac.jp [Graduate School of Informatics and Engineering, The University of Electro-Communications, Chofu-shi, Tokyo 182-8585 (Japan)

    2015-09-07

    A UV photodiode fabricated by the UV oxidation of a metallic zinc thin film on p-Si has manifested unique photoresponse characteristics. The electron concentration found by the Hall measurement was 3 × 10{sup 16 }cm{sup −3}, and such a low electron concentration resulted in a low visible photoluminescence. UV illumination enhances the oxidation at low temperatures and decreases the concentration of the oxygen vacancies. The I-V characteristic showed a good rectification with a four-order magnitude difference in the forward and reverse currents at 2 V, and its linear and frequency independent C{sup −2}–V characteristic confirmed an abrupt pn junction. The photoresponse showed a visible blindness with a responsivity ratio of UV and visible light as high as 100. Such a visible-blind photoresponse was attributed to the optimum thickness of the SiO{sub 2} formed on the Si surface during the UV oxidation at 400 °C. A lower potential barrier to holes at the ZnO/SiO{sub 2} interface facilitates Fowler-Nordheim tunneling of the photo-generated holes during the UV illumination, while a higher potential barrier to electrons efficiently blocks transport of the photo-generated electrons to the ZnO during the visible light illumination. The presence of oxide resulted in a slow photoresponse to the turn-on and off of the UV light. A detailed analysis is presented to understand how the photo-generated carriers contribute step by step to the photocurrent. In addition to the slow photoresponse associated with the SiO{sub 2} interfacial layer, the decay of the photocurrent was found extremely slow after turn-off of the UV light. Such a slow decay of the photocurrent is referred to as a persistent photoconductivity, which is caused by metastable deep levels. It is hypothesized that Zn vacancies form such a deep level, and that the photo-generated electrons need to overcome a thermal-energy barrier for capture. The ZnO film by the UV oxidation at 400 °C was found

  3. Performance Analysis of Si-Based Ultra-Shallow Junction Photodiodes for UV Radiation Detection

    NARCIS (Netherlands)

    Shi, L.

    2013-01-01

    This thesis presents a performance investigation of newly-developed ultra-shallow junction photodiodes (PureB-diodes) for ultraviolet (UV) radiation detection. The photodiodes are fabricated by pure boron chemical vapor deposition (PureB CVD) technology, which can provide nanometer-thin boron

  4. Hybrid AlGaN-SiC Avalanche Photodiode for Deep-UV Photon Detection

    Science.gov (United States)

    Aslam, Shahid; Herrero, Federico A.; Sigwarth, John; Goldsman, Neil; Akturk, Akin

    2010-01-01

    The proposed device is capable of counting ultraviolet (UV) photons, is compatible for inclusion into space instruments, and has applications as deep- UV detectors for calibration systems, curing systems, and crack detection. The device is based on a Separate Absorption and Charge Multiplication (SACM) structure. It is based on aluminum gallium nitride (AlGaN) absorber on a silicon carbide APD (avalanche photodiode). The AlGaN layer absorbs incident UV photons and injects photogenerated carriers into an underlying SiC APD that is operated in Geiger mode and provides current multiplication via avalanche breakdown. The solid-state detector is capable of sensing 100-to-365-nanometer wavelength radiation at a flux level as low as 6 photons/pixel/s. Advantages include, visible-light blindness, operation in harsh environments (e.g., high temperatures), deep-UV detection response, high gain, and Geiger mode operation at low voltage. Furthermore, the device can also be designed in array formats, e.g., linear arrays or 2D arrays (micropixels inside a superpixel).

  5. On the suitability of Peltier cooled Si-PIN detectors in transmission experiments

    International Nuclear Information System (INIS)

    Murty, V.R.K.; Devan, K.R.S.

    2001-01-01

    The performance of a Peltier cooled Si-PIN detector is compared with that for a Freolectric cooled Si(Li) detector, references being made to transmission experiments that evaluate total cross sections at low photon energies. The results of these measurements are discussed. (author)

  6. Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver.

    Science.gov (United States)

    Nishi, Hidetaka; Tsuchizawa, Tai; Kou, Rai; Shinojima, Hiroyuki; Yamada, Takashi; Kimura, Hideaki; Ishikawa, Yasuhiko; Wada, Kazumi; Yamada, Koji

    2012-04-09

    On the silicon (Si) photonic platform, we monolithically integrated a silica-based arrayed-waveguide grating (AWG) and germanium (Ge) photodiodes (PDs) using low-temperature fabrication technology. We confirmed demultiplexing by the AWG, optical-electrical signal conversion by Ge PDs, and high-speed signal detection at all channels. In addition, we mounted a multichannel transimpedance amplifier/limiting amplifier (TIA/LA) circuit on the fabricated AWG-PD device using flip-chip bonding technology. The results show the promising potential of our Si photonic platform as a photonics-electronics convergence.

  7. Improved charge collection of the buried p-i-n a-Si:H radiation detectors

    International Nuclear Information System (INIS)

    Fujieda, I.; Cho, G.; Conti, M.; Drewery, J.; Kaplan, S.N.; Perez-Mendez, V.; Qureshi, S.; Street, R.A.

    1989-09-01

    Charge collection in hydrogenated amorphous silicon (a-Si:H) radiation detectors is improved for high LET particle detection by adding thin intrinsic layers to the usual p-i-n structure. This buried p-i-n structure enables us to apply higher bias and the electric field is enhanced. When irradiated by 5.8 MeV α particles, the 5.7 μm thick buried p-i-n detector with bias 300V gives a signal size of 60,000 electrons, compared to about 20,000 electrons with the simple p-i-n detectors. The improved charge collection in the new structure is discussed. The capability of tailoring the field profile by doping a-Si:H opens a way to some interesting device structures. 17 refs., 7 figs

  8. The photovoltaic impact of atomic layer deposited TiO2 interfacial layer on Si-based photodiodes

    Science.gov (United States)

    Karabulut, Abdulkerim; Orak, İkram; Türüt, Abdulmecit

    2018-06-01

    In present work, photocurrent, current-voltage (I-V) and capacitance/conductance-voltage-frequency (C/G-V-f) measurements were analyzed for the photodiode and diode parameters of Al/TiO2/p-Si structure. The TiO2 thin film structure was deposited on p-Si by using atomic layer deposition technique (ALD) and its thickness was about 10 nm. The surface morphology of TiO2 coated on p-Si structure was observed via atomic force microscope (AFM). Barrier height (Φb) and ideality factor (n) values of device were found to be 0.80 eV, 0.70 eV, 0.56 eV and 1.04, 2.24, 10.27 under dark, 10 and 100 mW/cm2, respectively. Some photodiodes parameters such as fill factor (FF), power efficiency (%η), open circuit voltage (Voc), short circuit current (Isc) were obtained from I-V measurement under different light intensity. FF and η were accounted 49.2, 39,0 and 0.05, 0.45 under 10 and 100 mW/cm2 light power intensity, respectively. C-2-V graph was plotted from C-V-f measurements and zero bias voltage (V0), donor concentration (Nd), Fermi energy (EF), barrier height (Φb) and maximum electric field (Em) were determined from C-2-V data for different frequencies. The electrical and photocurrent values demonstrated that it can be used for photodiode, photo detector and photo sensing applications.

  9. Discrimination Voltage and Overdrive Bias Dependent Performance Evaluation of Passively Quenched SiC Single-Photon-Counting Avalanche Photodiodes

    International Nuclear Information System (INIS)

    Liu Fei; Yang Sen; Zhou Dong; Lu Hai; Zhang Rong; Zheng You-Dou

    2015-01-01

    In many critical civil and emerging military applications, low-level UV detection, sometimes at single photon level, is highly desired. In this work, a mesa-type 4H-SiC UV avalanche photodiode (APD) is designed and fabricated, which exhibits low leakage current and high avalanche gain. When studied by using a passive quenching circuit, the APD exhibits self-quenching characteristics due to its high differential resistance in the avalanche region. The single photon detection efficiency and dark count rate of the APD are evaluated as functions of discrimination voltage and over-drive voltage. The optimized operation conditions of the single photon counting APD are discussed. (paper)

  10. Fabrication of PureGaB Ge-on-Si photodiodes for well-controlled 100-pA-level dark currents

    NARCIS (Netherlands)

    Sammak, A.; Aminian, M.; Qi, L.; De Boer, W.B.; Charbon, E.; Nanver, L.K.

    2014-01-01

    The selective epitaxial growth of Ge-on-Si followed by in-situ deposition of a nm-thin Ga/B layer stack (PureGaB) has previously been shown to be a robust CMOS-compatible process for fabrication of Ge-on-Si photodiodes. In this paper, strategies to improve the control and reproducibility of PureGaB

  11. Molecular beam epitaxy grown Ge/Si pin layer sequence for photonic devices

    International Nuclear Information System (INIS)

    Schulze, J.; Oehme, M.; Werner, J.

    2012-01-01

    A key challenge to obtain a convergence of classical Si-based microelectronics and optoelectronics is the manufacturing of photonic integrated circuits integrable into classical Si-based integrated circuits. This integration would be greatly enhanced if similar facilities and technologies could be used. Therefore one approach is the development of optoelectronic components and devices made from group-IV-based materials such as SiGe, Ge or Ge:Sn. In this paper the optoelectronic performances of a pin diode made from a Ge/Si heterostructure pin layer sequence grown by molecular beam epitaxy are discussed. After a detailed description of the layer sequence growth and the device manufacturing process it will be shown that – depending on the chosen operating point and device design – the diode serves as a broadband high speed photo detector, Franz–Keldysh effect modulator or light emitting diode.

  12. Molecular beam epitaxy grown Ge/Si pin layer sequence for photonic devices

    Energy Technology Data Exchange (ETDEWEB)

    Schulze, J., E-mail: schulze@iht.uni-stuttgart.de; Oehme, M.; Werner, J.

    2012-02-01

    A key challenge to obtain a convergence of classical Si-based microelectronics and optoelectronics is the manufacturing of photonic integrated circuits integrable into classical Si-based integrated circuits. This integration would be greatly enhanced if similar facilities and technologies could be used. Therefore one approach is the development of optoelectronic components and devices made from group-IV-based materials such as SiGe, Ge or Ge:Sn. In this paper the optoelectronic performances of a pin diode made from a Ge/Si heterostructure pin layer sequence grown by molecular beam epitaxy are discussed. After a detailed description of the layer sequence growth and the device manufacturing process it will be shown that - depending on the chosen operating point and device design - the diode serves as a broadband high speed photo detector, Franz-Keldysh effect modulator or light emitting diode.

  13. Photoconducting and photocapacitance properties of Al/p-CuNiO{sub 2}-on-p-Si isotype heterojunction photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Elsayed, I.A. [Physics Department, College of Science and Humanitarian Studies, Salman bin Abdulaziz University (Saudi Arabia); Physics Department, Faculty of Science, Damietta University (Egypt); Çavaş, Mehmet [Department of Mechatronics, Faculty of Technology, Firat University, Elazig (Turkey); Gupta, R. [Department of Chemistry, Pittsburg State University, Pittsburg, KS 66762 (United States); Fahmy, T. [Physics Department, College of Science and Humanitarian Studies, Salman bin Abdulaziz University (Saudi Arabia); Polymer Research Group, Physics Department, Faculty of Science, Mansoura University (Egypt); Al-Ghamdi, Ahmed A. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Yakuphanoglu, F., E-mail: fyhan@hotmail.com [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Physics Department, Faculty of Science, Firat University, Elazig (Turkey)

    2015-07-25

    Highlights: • The CuNiO{sub 2} thin film was prepared by sol gel method. • The diode has a high photosensitivity value of 1.02 × 10{sup 3} under 100 mW/cm{sup 2}. • Al/p-Si/CuNiO{sub 2}/Al can used in optoelectronic device applications. - Abstract: Thin film of CuNiO{sub 2} was prepared by sol gel method to fabricate a photodiode. The surface morphology of the CuNiO{sub 2} thin film was investigated by atomic force microscopy (AFM). AFM results indicated that CuNiO{sub 2} film was formed from the nanoparticles and the average size of the nanoparticles was about 115 nm. The optical band gap of CuNiO{sub 2} film was calculated using optical data and was found to be about 2.4 eV. A photodiode having a structure of Al/p-Si/CuNiO{sub 2}/Al was prepared. The electronic parameters such as ideality factor and barrier height of the diode were determined and were obtained to be 8.23 and 0.82 eV, respectively. The interface states properties of the Al/p-Si/CuNiO{sub 2}/Al diode was performed using capacitance–voltage and conductance–voltage characteristics. The series resistance of the Al/p-Si/CuNiO{sub 2}/Al photo diode was observed to be decreasing with increasing frequency. The diode exhibited a photoconducting behavior with a high photosensitivity value of 1.02 × 10{sup 3} under 100 mW/cm{sup 2}. The obtained results indicate that Al/p-Si/CuNiO{sub 2}/Al can used in optoelectronic device applications.

  14. A novel type heterojunction photodiodes formed junctions of Au/LiZnSnO and LiZnSnO/p-Si in series

    Energy Technology Data Exchange (ETDEWEB)

    Aydin, H. [Department of Metallurgical and Materials Science, Faculty of Engineering, Tunceli University, Tunceli (Turkey); Tataroğlu, A. [Department of Physics, Faculty of Science, Gazi University, Ankara (Turkey); Al-Ghamdi, Ahmed A. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Yakuphanoglu, F., E-mail: fyhanoglu@firat.edu.tr [Department of Metallurgical and Materials Science, Faculty of Engineering, Tunceli University, Tunceli (Turkey); Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); El-Tantawy, Farid [Department of Physics, Faculty of Science, Suez Canal University, Ismailia (Egypt); Farooq, W.A. [Physics and Astronomy Department, College of Science, King Saud University, Riyadh (Saudi Arabia)

    2015-03-15

    Highlights: • Lithium–zinc–tin–oxide thin films were prepared by sol gel method. • The Au/LiZnSnO/p-Si/Al photodiodes were fabricated using a LZTO layer grown on p-Si. • The photodiodes with Li-doped ZTO interfacial layer exhibited a better device performance. - Abstract: Lithium–zinc–tin–oxide thin films were prepared by sol gel method. The structural and optical properties of the films were investigated. The optical band gaps of the LiZnSnO films were found to be 3.78 eV for 0 at.% Li, 3.77 eV for 1 at.% Li, 3.87 eV for 3 at.% Li and 3.85 eV for 5 at.% Li, respectively. Au/LiZnSnO/p-Si/Al photodiodes were fabricated using a lithium–zinc–tin–oxide (LZTO, Li–Zn–Sn–O) layer grown on p-Si semiconductor. The electrical characteristics of the photodiodes were analyzed by current–voltage, capacitance–voltage and conductance–voltage measurements. The reverse current of the diodes increases with both the increasing illumination intensity and Li content. It was found that the Li-doped ZTO photodiodes exhibited a better device performance than those with an undoped ZTO.

  15. On the suitability of P Si-PIN detectors in transmission experiments

    International Nuclear Information System (INIS)

    Murty, V.R.K.; Devan, K.R.S.

    2000-01-01

    There has been considerable interest, in the recent past, in the development of detector technology. In this context, new detectors, especially room temperature operated detectors and inexpensive cooling systems have recently entered the market. These new systems replace the old systems where there are inadequate facilities to operate them to achieve superior performance. Such performance capabilities of different systems, on a comparative basis have not been widely published in the recent past. In this direction, the Peltier cooled detectors have entered the market and are replacing the conventional Si(Li) detectors. In between the conventional Si(Li) detectors and Peltier cooled Si-PIN detectors, the freolectric cooled Si(Li) detectors were also used in Radiation Physics applications. In this paper, the performance of the Peltier cooled Si-PIN detector in comparison with a Freolectric cooled Si(Li) detector has been studied in Transmission experiments to evaluate the total cross sections at low energies and the results are discussed. (author)

  16. A Discrete Component Low-Noise Preamplifier Readout for a Linear (1x16) SiC Photodiode Array

    Science.gov (United States)

    Kahle, Duncan; Aslam, Shahid; Herrero, Frederico A.; Waczynski, Augustyn

    2016-01-01

    A compact, low-noise and inexpensive preamplifier circuit has been designed and fabricated to optimally readout a common cathode (1x16) channel 4H-SiC Schottky photodiode array for use in ultraviolet experiments. The readout uses an operational amplifier with 10 pF capacitor in the feedback loop in parallel with a low leakage switch for each of the channels. This circuit configuration allows for reiterative sample, integrate and reset. A sampling technique is given to remove Johnson noise, enabling a femtoampere level readout noise performance. Commercial-off-the-shelf acquisition electronics are used to digitize the preamplifier analogue signals. The data logging acquisition electronics has a different integration circuit, which allows the bandwidth and gain to be independently adjusted. Using this readout, photoresponse measurements across the array between spectral wavelengths 200 nm and 370 nm are made to establish the array pixels external quantum efficiency, current responsivity and noise equivalent power.

  17. A discrete component low-noise preamplifier readout for a linear (1×16) SiC photodiode array

    Energy Technology Data Exchange (ETDEWEB)

    Kahle, Duncan [NASA, Goddard Space Flight Center, Detector Systems Branch, Greenbelt, MD 20771 (United States); Aslam, Shahid, E-mail: shahid.aslam-1@nasa.gov [NASA, Goddard Space Flight Center, Planetary Systems Laboratory, Greenbelt, MD 20771 (United States); Herrero, Federico A.; Waczynski, Augustyn [NASA, Goddard Space Flight Center, Detector Systems Branch, Greenbelt, MD 20771 (United States)

    2016-09-11

    A compact, low-noise and inexpensive preamplifier circuit has been designed and fabricated to optimally readout a common cathode (1×16) channel 4H-SiC Schottky photodiode array for use in ultraviolet experiments. The readout uses an operational amplifier with 10 pF capacitor in the feedback loop in parallel with a low leakage switch for each of the channels. This circuit configuration allows for reiterative sample, integrate and reset. A sampling technique is given to remove Johnson noise, enabling a femtoampere level readout noise performance. Commercial-off-the-shelf acquisition electronics are used to digitize the preamplifier analog signals. The data logging acquisition electronics has a different integration circuit, which allows the bandwidth and gain to be independently adjusted. Using this readout, photoresponse measurements across the array between spectral wavelengths 200 nm and 370 nm are made to establish the array pixels external quantum efficiency, current responsivity and noise equivalent power.

  18. Effect of the tunnelling oxide growth by H{sub 2}O{sub 2} oxidation on the performance of a-Si:H MIS photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Aguas, H.; Perreira, L.; Silva, R.J.C.; Fortunato, E.; Martins, R

    2004-06-15

    In this work metal-insulator-semiconductor (MIS) photodiodes with a structure: Cr/a-Si:H(n{sup +})/a-Si:H(i)/oxide/Au were studied, where the main objective was to determine the influence of the oxide layer on the performance of the devices. The results achieved show that their performance is a function of both oxide thickness and oxide density. The a-Si:H oxidation method used was the immersion in H{sub 2}O{sub 2} solution. By knowledge of the oxide growth process it was possible to fabricate photodiodes exhibiting an open circuit voltage of 0.65 V and short circuit current density under AM1.5 illumination of 11 mA/cm{sup 2}, with a response times less than 1 {mu}s for load resistance <400 {omega}, and a signal to noise ratio of 1x10{sup 7}.

  19. A new type photodiode: p-Si/GaN pn junction in series with GaN/Ag Schottky diode

    Energy Technology Data Exchange (ETDEWEB)

    Yakuphanoglu, F., E-mail: fyhanoglu@firat.edu.tr [Department of Physics, Faculty of Science, Firat University, Elazig (Turkey); Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Shokr, F.S. [Physics Department, Faculty of Science & Arts, King Abdulaziz University, Rabigh (Saudi Arabia); Gupta, R.K., E-mail: ramguptamsu@gmail.com [Department of Chemistry and Kansas Polymer Research Center, Pittsburg State University, Pittsburg (United States); Al-Ghamdi, Ahmed A. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Bin-Omran, S. [Department of Physics and Astronomy, College of Science, King Saud University, Riyadh (Saudi Arabia); Al-Turki, Yusuf [Department of Electrical and Computer Engineering, King Abdulaziz University, Jeddah (Saudi Arabia); El-Tantawy, Farid [Department of Physics, Faculty of Science, Suez Canal University, Ismailia (Egypt)

    2015-11-25

    Large quantities of gallium nitride (GaN) nanoparticles were successfully synthesized via a facile sol-gel approach. X-ray diffraction analysis confirms the polycrystalline nature of the GaN with hexagonal wurtzite structure and lattice constants a = 0.3189 nm and c = 0.5185 nm. The morphology of the GaN film was investigated by field emission scanning electron microscopy. The obtained results indicate that the synthesized GaN nanorods have an average length of around 60 nm and an average diameter of 23 nm. The optical band gap of the GaN film was obtained to be 3.4 eV. The gallium nitride/p-Si Schottky diode was fabricated by thermal evaporation technique on p-silicon. The current–voltage (I–V) characteristics of the fabricated diode was tested under dark and various light intensities. T The diode ideality factor and barrier height were computed using forward bias I–V characteristics of the diode and are found to be 1.66 and 0.53 eV, respectively. The obtained results suggest that the film preparation by sol gel method is fast and simple to prepare GaN based photodiode by according to metal organic deposition methods. - Highlights: • Facile method was used to synthesize GaN powder. • The Al/p-Si/GaN/Ag diode was fabricated using thermal evaporator technique. • Al/p-Si/GaN/Ag diode can be used as a photosensor for optoelectronic applications.

  20. Effects of the intrinsic layer width on the band-to-band tunneling current in p-i-n GaN-based avalanche photodiodes

    International Nuclear Information System (INIS)

    Wang, Ling; Bao, Xichang; Zhang, Wenjing; Li, Chao; Yuan, Yonggang; Xu, Jintong; Zhang, Yan; Li, Xiangyang

    2009-01-01

    Dark current is critical for GaN-based avalanche photodiodes because it significantly increases the noise current and limits the multiplication factor. It has been found that the band-to-band tunneling current is the dominant origin of the dark current for avalanche photodiodes at the onset of breakdown voltage. Experimentally, for GaN-based avalanche photodiodes with a thinner intrinsic layer, the dark current increases nearly exponentially with the applied voltage even at a lower bias voltage. In this paper, the intrinsic layer (i-layer) width of GaN-based avalanche photodiodes has been varied to study its effect on the band-to-band tunneling current. A widely used equation was used to calculate the band-to-band tunneling current of avalanche photodiodes with different i-layer widths (i-layer 0.1 µm, 0.2 µm and 0.4 µm). At −40 V, the band-to-band tunneling current significantly reduces by a magnitude of 10 −15 A with an increase in the i-layer width from 0.1 µm to 0.2 µm, and a magnitude of 10 −29 A with an increase in the i-layer width from 0.2 µm to 0.4 µm. Then, GaN-based avalanche photodiodes (i-layer 0.1 µm, 0.2 µm and 0.4 µm) with different-sized mesa were fabricated. Also, the measurement of dark current of all three different structures was performed, and their multiplication factors were given

  1. Superconductivity, critical current density, and flux pinning in MgB2-x(SiC)x/2 superconductor after SiC nanoparticle doping

    Science.gov (United States)

    Dou, S. X.; Pan, A. V.; Zhou, S.; Ionescu, M.; Wang, X. L.; Horvat, J.; Liu, H. K.; Munroe, P. R.

    2003-08-01

    We investigated the effect of SiC nanoparticle doping on the crystal lattice structure, critical temperature Tc, critical current density Jc, and flux pinning in MgB2 superconductor. A series of MgB2-x(SiC)x/2 samples with x=0-1.0 were fabricated using an in situ reaction process. The contraction of the lattice and depression of Tc with increasing SiC doping level remained rather small most likely due to the counterbalancing effect of Si and C co-doping. The high level Si and C co-doping allowed the creation of intragrain defects and highly dispersed nanoinclusions within the grains which can act as effective pinning centers for vortices, improving Jc behavior as a function of the applied magnetic field. The enhanced pinning is mainly attributable to the substitution-induced defects and local structure fluctuations within grains. A pinning mechanism is proposed to account for different contributions of different defects in MgB2-x(SiC)x/2 superconductors.

  2. Comparison of carrier transport mechanism under UV/Vis illumination in an AZO photodetector and an AZO/p-Si heterojunction photodiode produced by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Shasti, M.; Mortezaali, A., E-mail: mortezaali@alzahra.ac.ir; Dariani, R. S. [Department of Physics, Alzahra University, Tehran 1993893973 (Iran, Islamic Republic of)

    2015-01-14

    In this study, Aluminum doped Zinc Oxide (AZO) layer is deposited on p-type silicon (p-Si) by spray pyrolysis method to fabricate ultraviolet-visible (UV/Vis) photodetector as Al doping process can have positive effect on the photodetector performance. Morphology, crystalline structure, and Al concentration of AZO layer are investigated by SEM, XRD, and EDX. The goal of this study is to analyze the mechanism of carrier transport by means of current-voltage characteristics under UV/Vis illumination in two cases: (a) electrodes connected to the surface of AZO layer and (b) electrodes connected to cross section of heterojunction (AZO/p-Si). Measurements indicate that the AZO/p-Si photodiode exhibits a higher photocurrent and lower photoresponse time under visible illumination with respect to AZO photodetector; while under UV illumination, the above result is inversed. Besides, the internal junction field of AZO/p-Si heterojunction plays an important role on this mechanism.

  3. Comparison of carrier transport mechanism under UV/Vis illumination in an AZO photodetector and an AZO/p-Si heterojunction photodiode produced by spray pyrolysis

    International Nuclear Information System (INIS)

    Shasti, M.; Mortezaali, A.; Dariani, R. S.

    2015-01-01

    In this study, Aluminum doped Zinc Oxide (AZO) layer is deposited on p-type silicon (p-Si) by spray pyrolysis method to fabricate ultraviolet-visible (UV/Vis) photodetector as Al doping process can have positive effect on the photodetector performance. Morphology, crystalline structure, and Al concentration of AZO layer are investigated by SEM, XRD, and EDX. The goal of this study is to analyze the mechanism of carrier transport by means of current-voltage characteristics under UV/Vis illumination in two cases: (a) electrodes connected to the surface of AZO layer and (b) electrodes connected to cross section of heterojunction (AZO/p-Si). Measurements indicate that the AZO/p-Si photodiode exhibits a higher photocurrent and lower photoresponse time under visible illumination with respect to AZO photodetector; while under UV illumination, the above result is inversed. Besides, the internal junction field of AZO/p-Si heterojunction plays an important role on this mechanism

  4. Passivation of defect states in Si and Si/SiO2 interface states by cyanide treatment: improvement of characteristics of pin-junction amorphous Si and crystalline Si-based metal-oxide-semiconductor junction solar cells

    International Nuclear Information System (INIS)

    Fujiwara, N.; Fujinaga, T.; Niinobe, D.; Maida, O.; Takahashi, M.; Kobayashi, H.

    2003-01-01

    Defect states in Si can be passivated by cyanide treatment which simply involves immersion of Si materials in KCN solutions, followed by rinse. When the cyanide treatment is applied to pin-junction amorphous Si [a-Si] solar cells, the initial conversion efficiency increases. When the crown-ether cyanide treatment using a KCN solution of xylene containing 18-crown-6 is performed on i-a-Si films, decreases in the photo- and dark current densities with the irradiation time are prevented. The cyanide treatment can also passivate interface states present at Si/SiO 2 interfaces, leading to an increase in the conversion efficiency of 2 / Si (100)> solar cells.. Si-CN bonds formed by the reaction of defect states with cyanide ions have a high bond energy of about 4.5 eV and hence heat treatment at 800 0 C does not rupture the bonds, making thermal stability of the cyanide treatment.. When the cyanide treatment is applied to ultrathin SiO 2 /Si structure, the leakage current density is markedly decreased (Authors)

  5. Noise in a-Si:H p-i-n detector diodes

    International Nuclear Information System (INIS)

    Cho, G.; Qureshi, S.; Drewery, J.S.; Jing, T.; Kaplan, S.N.; Lee, H.; Mireshghi, A.; Perez-Mendez, V.; Wildermuth, D.

    1991-10-01

    Noise of a-Si:H p-i-n diodes (5 ∼ 50 μm thick) under reverse bias was investigated. The current dependent 1/f type noise was found to be the main noise component at high bias. At low bias the thermal noise from a series resistance of the p-layer and of the metallic contacts is the dominant noise source which is unrelated to the reverse current through the diode. The noise associated with the p-layer resistance decreased significantly on annealing under reverse bias, reducing the total zero bias noise by a factor 2 approximately. The noise recovered to the original value on subsequent annealing without bias. In addition to the resistive noise there seems to be a shaping time independent noise component at zero biased diodes

  6. Transient effects of ionizing radiation in Si, InGaAsP, GaAlSb, and Ge photodiodes

    International Nuclear Information System (INIS)

    Wiczer, J.J.; Barnes, C.E.; Dawson, L.R.

    1980-01-01

    Certain military applications require the continuous operation of optoelectronic information transfer systems during exposure to ionizing radiation. In such an environment the optical detector can be the system element which limits data transmission. We report here the measured electrical and optical characteristics of an irradiation tolerant photodiode fabricated from a double heterojunction structure in the gallium aluminum antimonide (GaAlSb) ternary semiconductor system. A series of tests at Sandia Laboratories' Relativistic Electron Beam Accelerator (REBA) subjected this device and commercially available photodiodes (made from silicon, germanium, and indium gallium arsenide phosphide) to dose rate levels of 10 7 to 10 8 rads/sec. The results of these tests show that the thin GaAlSb double heterojunction photodiode structure generates significantly less unwanted radiation induced current density than that of the next best commercial device

  7. Characterisation of Al{sub 0.52}In{sub 0.48}P mesa p-i-n photodiodes for X-ray photon counting spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Butera, S., E-mail: S.Butera@sussex.ac.uk; Lioliou, G.; Barnett, A. M. [Semiconductor Materials and Device Laboratory, School of Engineering and Informatics, University of Sussex, Brighton BN1 9QT (United Kingdom); Krysa, A. B. [EPSRC National Centre for III-V Technologies, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom)

    2016-07-14

    Results characterising the performance of thin (2 μm i-layer) Al{sub 0.52}In{sub 0.48}P p{sup +}-i-n{sup +} mesa photodiodes for X-ray photon counting spectroscopy are reported at room temperature. Two 200 μm diameter and two 400 μm diameter Al{sub 0.52}In{sub 0.48}P p{sup +}-i-n{sup +} mesa photodiodes were studied. Dark current results as a function of applied reverse bias are shown; dark current densities <3 nA/cm{sup 2} were observed at 30 V (150 kV/cm) for all the devices analysed. Capacitance measurements as a function of applied reverse bias are also reported. X-ray spectra were collected using 10 μs shaping time, with the device illuminated by an {sup 55}Fe radioisotope X-ray source. Experimental results showed that the best energy resolution (FWHM) achieved at 5.9 keV was 930 eV for the 200 μm Al{sub 0.52}In{sub 0.48}P diameter devices, when reverse biased at 15 V. System noise analysis was also carried out, and the different noise contributions were computed.

  8. Detection of the scintillation light emitted from direct-bandgap compound semiconductors by a Si avalanche photodiode at 150 mK

    International Nuclear Information System (INIS)

    Yasumune, Takashi; Takayama, Nobuyasu; Maehata, Keisuke; Ishibashi, Kenji; Umeno, Takahiro

    2008-01-01

    In this work, the direct-bandgap compound semiconductor materials are irradiated by α particles emitted from 241 Am for the detection of scintillation light at the temperature of 150 mK. For the irradiation experiment, two disk shaped samples were fabricated from an epoxy resin mixed with the powder of PbI 2 and CuI, respectively. Each disk-samples was cooled down to 150 mK by a compact liquid helium-free dilution refrigerator. A Si avalanche photodiode (APD) was employed for detecting the scintillation light emitted from the disk-sample inside the refrigerator. The detection signal current of Si APD was converted into the voltage pulses by a charge sensitive preamplifier. The voltage pulses of the scintillation light emitted from the direct-bandgap semiconductors were observed at the temperature of 150 mK. (author)

  9. Process effects on leakage current of Si-PIN neutron detectors with porous microstructure

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Baoning; Zhao, Kangkang; Yang, Taotao [Beijing University of Technology, Chaoyang District, Pingleyuan 100, 100124 Beijing (China); Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Jiang, Yong; Fan, Xiaoqiang [Institute of Nuclear Physics and Chemistry, CAEP, Mianshan Road 64, 621900 Mianyang (China); Lu, Min [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Han, Jun [Beijing University of Technology, Chaoyang District, Pingleyuan 100, 100124 Beijing (China)

    2017-06-15

    Using the technique of Microfabrication, such as deep silicon dry etching, lithography, etc. Si-PIN neutron detectors with porous microstructure have been successfully fabricated. In order to lower the leakage current, the key fabrication processes, including the Al windows opening, deep silicon etching and the porous side wall smoothing, have been optimized. The cross-section morphology and current-voltage characteristics have been measured to evaluate the microfabrication processes. With the optimized conditions presented by the measurements, a neutron detector with a leakage current density of 2.67 μA cm{sup -2} at a bias of -20 V is obtained. A preliminary neutron irradiation test with {sup 252}Cf neutron source has also been carried out. The neutron irradiation test shows that the neutron detection efficiency of the microstructured neutron detectors is almost 3.6 times higher than that of the planar ones. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Radiation tests of photodiodes for the ATLAS SCT and PIXEL opto- links

    CERN Document Server

    Hou, L S; Lee, S C; Su, D S; Teng, P K

    2005-01-01

    In previous research, epitaxial Si PIN photodiodes produced by Centronic which will be used in the ATLAS semiconductor tracker have been irradiated with 1 MeV neutrons and 24 GeV protons with fluences up to an equivalent of $10^{15}$ 1 MeV neutrons (1,2) . In this work 30 MeV proton beams were used to irradiate Centronic and Truelight epitaxial Si PIN diodes with accumulated fluences of up to 2.1 multiplied by $10^{14}$-30 MeV p $cm^{-2}$, an equivalent of 5.7 multiplied by $10^{14} cm^{-2}$ 1 MeV neutrons, to reach the pixel radiation environment. The responsivity was measured with different levels of fluence in order to study the responsivity behaviour of two different types of photodiodes. The responsivity behaviour of these two photodiodes was similar: a linear degradation at large fluences, greater than $10^{14}$ 30 MeV p $cm^{-2}$, but with different slopes. The response of the Centronic PIN diode showed a degradation to 73% after a proton fluence of $10^{13}$ p $cm^{-2}$ of 30 MeV and a linear degradat...

  11. Electrically modulated lateral photovoltage in μc-SiOx:H/a-Si:H/c-Si p-i-n structure at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jihong; Qiao, Shuang, E-mail: sqiao@hbu.edu.cn; Wang, Jianglong; Wang, Shufang, E-mail: sfwang@hbu.edu.cn; Fu, Guangsheng

    2017-04-15

    Graphical abstract: In this paper, the temperature dependence of the LPE has been experimentally studied under illumination of different lasers ranging from visible to infrared for the μc-SiOx:H/a-Si:H/c-Si p-i-n structure. It was found that the position sensitivity increases nearly linearly with wavelength from 405 nm to 980 nm in the whole temperature range, and the saturated position sensitivity decreased quickly from 32.4 mV/mm to a very low value of 1.26 mV/mm and the nonlinearity improved from 7.01% to 3.54% with temperature decreasing from 296 K to 80 K for 532 nm laser illumination. By comparing the experiment results of μc-SiOx:H/a-Si:H/c-Si and ITO/c-Si, it is suggest that the position sensitivity was mainly determined by the temperature-dependent SB and the nonlinearity was directly related to the decreased resistivity of conductive layer. When an external bias voltage was applied, the LPE improved greatly and the position sensitivity of 361.35 mV/mm under illumination of 80 mW at 80 K is 286.7 times as large as that without biased voltage. More importantly, both the position sensitivity and the nonlinearity were independent of temperature again, which can be ascribed to the large constant transmission probability and diffusion length induced by the greatly increased SB. Our research provides an essential insight on the bias voltage-modulated LPE at different temperatures, and this temperature-independent greatly improved LPE is thought to be very useful for developing novel photoelectric devices. - Highlights: • The LPE is proportional to the laser wavelength in the whole temperature range. • The LPE decreases gradually with decreasing temperature from 296 K to 80 K. • Nonlinearity of the LPV curve improves a little with decreasing temperature. • The LPE improves dramatically and is independent of temperature with the aid of a bias voltage. - Abstract: The lateral photovoltaic effect (LPE) in μc-SiOx:H/a-Si:H/c-Si p-i-n structure is studied

  12. Preliminary calculations of stress change of fuel pin using SiC/SiC composites for GFR with changing of thermal conductivity degradation by irradiation

    International Nuclear Information System (INIS)

    Lee, J. K.; Naganuma, M.

    2006-01-01

    Gas cooled Fast Reactor (GFR) is being researched as a candidate concept of Generation IV international Forum. As a main feature of GFR, it should be maintained high temperature and pressure of coolant gas for heat transfer efficiency. Such a demanding environment requires high-temperature-resistant structural materials distinguished from traditional steel material. Consequently, ceramics are promising candidate material of core components. Especially, Silicon Carbide fiber reinforced Silicon Carbide composites (SiC/SiC) have encouraging characteristics such as refractoriness, low activation and toughness. Application of new material to core components must be explained by the viewpoint of engineering validity. Therefore, present study surveyed that current report for mechanical strength and thermal conductivity of SiC/SiC composites. According to the reports, neutron irradiation environment degraded mechanical properties of SiC/SiC composites. To confirm applicability to core components, model of fuel pin using SiC/SiC composites was assumed with feasible mechanical properties. Furthermore, it was calculated and estimated that the stress caused by temperature variation of inner and outer side of assumed model of cladding tube. Stress was calculated by changing of input date such as thickness of cladding tube, temperature variation, thermal conductivity and linear power. In the range of this study, the most important factor was identified as degradation of thermal conductivity by irradiation. It caused a significant stress and limited a geometrical design of fuel pin. It was discussed that the differences of heat transfer between isotropic and anisotropic materials like a metal and composites. These results should be helpful not only to determine a design factor of core component but also to indicate an improvement direction of SiC/SiC composites. Through these work, reliability and safety of GFR will be increased

  13. Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection.

    Science.gov (United States)

    Pham, Thach; Du, Wei; Tran, Huong; Margetis, Joe; Tolle, John; Sun, Greg; Soref, Richard A; Naseem, Hameed A; Li, Baohua; Yu, Shui-Qing

    2016-03-07

    Normal-incidence Ge 1-x Sn x photodiode detectors with Sn compositions of 7 and 10% have been demonstrated. Such detectors were based on Ge/Ge 1-x Sn x /Ge double heterostructures grown directly on a Si substrate via a chemical vapor deposition system. A temperature-dependence study of these detectors was conducted using both electrical and optical characterizations from 300 to 77 K. Spectral response up to 2.6 µm was achieved for a 10% Sn device at room temperature. The peak responsivity and specific detectivity (D*) were measured to be 0.3 A/W and 4 × 10 9 cmHz 1/2 W -1 at 1.55 µm, respectively. The spectral D* of a 7% Sn device at 77 K was only one order-of-magnitude lower than that of an extended-InGaAs photodiode operating in the same wavelength range, indicating the promising future of GeSn-based photodetectors.

  14. Simulation of Si P-i-N diodes for use in a positron emission tomography detector module

    International Nuclear Information System (INIS)

    Bailey, M.J.; University of Wollongong, NSW; Rosenfeld, A.; Lerch, M.; Taylor, G.; Heiser, G.

    2000-01-01

    Full text: Current Positron Emission Tomography (PET) systems consist of scintillation crystals optically coupled to photomultiplier tubes with associated electronics used to detect photons generated within the scintillator. The cost of photomultiplier tubes (PMTs) is considerable and is the major factor in the cost of PET systems. It has been suggested that Si P-i-N diodes can replace PMTs and provide Depth of Interaction (DOI) information for improved spatial resolution. Si P-i-N diodes of 25mm x 300μm and 3mm x 300μm cross sectional area were simulated using a 2D Monte Carlo program (PClD V5) from the UNSW photovoltics group. The diffusion lengths were varied from 0.5μm to 5μm and the charge collection characteristics of the diodes were observed. A 400nm monochromatic light source was used for the excitation as an approximation of the mean wavelength output from LSO crystal. The diodes were reverse biased with voltages 40V, 20V and 10V. The optimum diffusion length of up to 2μm and bias voltage of 40V were determined using the electric field, current density, carrier density and potential distribution results. These parameters will be used for the design of a device for optimal charge collection capabilities for the wavelengths encountered in PET applications. Further studies need to be conducted using spectra from LSO rather than a monochromatic source. The response of various Si P-i-N diodes to a monochromatic light source have been modeled in order to design a device for application in a PET detector module for DOI measurements. The charge collection within the first 2μm has been emphasized due to the strong absorption of photons from LSO near the surface.Copyright (2000) Australasian College of Physical Scientists and Engineers in Medicine

  15. Depth dependence of Neel wall pinning on amorphous Co x Si1-x films with diluted arrays of elliptical antidots

    International Nuclear Information System (INIS)

    Perez-Junquera, A.; Martin, J.I.; Anguita, J.V.; Rodriguez-Rodriguez, G.; Velez, M.; Rubio, H.; Alvarez-Prado, L.M.; Alameda, J.M.

    2007-01-01

    Diluted arrays of elliptical antidots have been fabricated by optical lithography, electron beam lithography and plasma etching on amorphous Co 74 Si 26 magnetic films with a well-defined uniaxial anisotropy. The magnetic behavior of two identical antidot arrays but with different hole depth in comparison with film thickness has been studied by transverse magneto-optical Kerr effect. Significant differences appear in the coercivity depending on whether the magnetic film is completely perforated or not, indicating a much more effective domain wall pinning process when the depth of the holes is smaller than the magnetic film thickness

  16. Investigation of avalanche photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Si Mohand, D.; Benhammou, Y.; Depasse, P.; Goyot, M.; Ille, B.; Linard, E.; Martin, F.; Musienko, Y.

    1996-06-01

    Some characteristics and performances of a set of nine Hamamatsu avalanche photodiodes have been investigated. These APDs have equipped a small 3x3 PbWO{sub 4} crystal matrix in X3 beam during the summer of 1995. This note summarizes the main results of this work. An electromagnetic calorimeter with a high resolution is necessary to search for the Higgs if it has a mass between 80 and 160 GeV. A PbWO{sub 4} crystal option has been chosen by the CMS collaboration to achieve this task. The light is collected and converted into an electric charge by an Avalanche Photodiode (APD) followed by a fast preamplifier. The advantage of the APDs is that they are not sensitive to the strong magnetic field when compared to photomultipliers and they are a small nuclear counter effect when compared to PIN diodes. In this study, we have tested nine low capacitance Hamamatsu APDs (S5345) received in spring, 1995 with an area of 0.2 cm{sup 2}. We have measured the capacitance and dark current for each APD. The gain measurements have also been done with gamma sources, continuous and pulsed light. The gain sensitivity versus bias and temperature have also been investigated succinctly. (author). 8 refs., 16 figs., 1 tab.

  17. Investigation of avalanche photodiodes

    International Nuclear Information System (INIS)

    Si Mohand, D.; Benhammou, Y.; Depasse, P.; Goyot, M.; Ille, B.; Linard, E.; Martin, F.; Musienko, Y.

    1996-06-01

    Some characteristics and performances of a set of nine Hamamatsu avalanche photodiodes have been investigated. These APDs have equipped a small 3x3 PbWO 4 crystal matrix in X3 beam during the summer of 1995. This note summarizes the main results of this work. An electromagnetic calorimeter with a high resolution is necessary to search for the Higgs if it has a mass between 80 and 160 GeV. A PbWO 4 crystal option has been chosen by the CMS collaboration to achieve this task. The light is collected and converted into an electric charge by an Avalanche Photodiode (APD) followed by a fast preamplifier. The advantage of the APDs is that they are not sensitive to the strong magnetic field when compared to photomultipliers and they are a small nuclear counter effect when compared to PIN diodes. In this study, we have tested nine low capacitance Hamamatsu APDs (S5345) received in spring, 1995 with an area of 0.2 cm 2 . We have measured the capacitance and dark current for each APD. The gain measurements have also been done with gamma sources, continuous and pulsed light. The gain sensitivity versus bias and temperature have also been investigated succinctly. (author). 8 refs., 16 figs., 1 tab

  18. Measurements of 1/f noise in A-Si:H pin diodes and thin-film-transistors

    International Nuclear Information System (INIS)

    Cho, Gyuseong; Drewery, J.S.; Fujieda, I.; Jing, T.; Kaplan, S.N.; Perez-Mendez, V.; Qureshi, S.; Wildermuth, D.; Street, R.A.

    1990-05-01

    We measured the equivalent noise charge of a-Si:H pin diodes (5 ∼ 45μm i-layer) with a pulse shaping time of 2.5 μsec under reverse biases up to 30 V/μm and analyzed it as a four component noise source. The frequency spectra of 1/f noise on the soft-breakdown region and of the Nyquist noise from contact resistance of diodes were measured. Using the conversion equations for a CR-RC shaper, we identified the contact resistance noise and the 1/f noise as the main noise sources in the low bias and high bias regions respectively. The 1/f noise of a-Si:H TFTs with channel length of 15 μm was measured to be the dominant component up to ∼100kHz for both saturation and linear regions. 15 refs., 7 figs

  19. Time-of-flight measurements of heavy ions using Si PIN diodes

    Energy Technology Data Exchange (ETDEWEB)

    Strekalovsky, A. O., E-mail: alex.strek@bk.ru; Kamanin, D. V. [Joint Institute for Nuclear Research (Russian Federation); Pyatkov, Yu. V. [National Nuclear Research University MEPhI (Moscow Engineering Physics Institute) (Russian Federation); Kondratyev, N. A.; Zhuchko, V. E. [Joint Institute for Nuclear Research (Russian Federation); Ilić, S. [University of Novi Sad (Serbia); Alexandrov, A. A.; Alexandrova, I. A. [Joint Institute for Nuclear Research (Russian Federation); Jacobs, N. [University of Stellenbosch, Faculty of Military Science, Military Academy (South Africa); Kuznetsova, E. A.; Mishinsky, G. V.; Strekalovsky, O. V. [Joint Institute for Nuclear Research (Russian Federation)

    2016-12-15

    A new off-line timing method for PIN diode signals is presented which allows the plasma delay effect to be suppressed. Velocities of heavy ions measured by the new method are in good agreement within a wide range of masses and energies with velocities measured by time stamp detectors based on microchannel plates.

  20. Substitution of photomultiplier tubes by photodiodes

    International Nuclear Information System (INIS)

    Teixeira, D.L.

    1990-04-01

    The application of Si semiconductors, either of the conventional or the avalanche type, as light amplifiers in radiation detection, has been studied aiming the substitution of photomultiplier (PM) tubes by photodiodes. The objective of this work is to compare the response of photodiodes and PM tubes when coupled to scintillation crystals. A Hamamatsu Si photodiode, model S 1337-66 B Q, was coupled to a Harshaw NaI (TI) scintillation crystal of window diameter equal to 25,4 mm. Its performance was evaluated by specially designed associated electronics, compatible with the photodiode characteristics. X-ray beams from 30 to 111 KeV were used to determine the response and the repeatability of the scintillator-photodiode and the scintillator-PM tube systems. The repeatability was found to be within 0,27% for the photodiode and 0,57% for the PM tube. This work confirmed that photodiodes can be used as light amplifiers, provided their characteristics, such as light spectrum response, are considered. It also shows that further studies are necessary in order to identify the applications in radiation detection where PM tubes might be replaced by photodiodes. (author)

  1. In vivo evaluation of CaO-SiO2-P2O5-B2O3 glass-ceramics coating on Steinman pins.

    Science.gov (United States)

    Lee, Jae Hyup; Hong, Kug Sun; Baek, Hae-Ri; Seo, Jun-Hyuk; Lee, Kyung Mee; Ryu, Hyun-Seung; Lee, Hyun-Kyung

    2013-07-01

    Surface coating using ceramics improves the bone bonding strength of an implant. We questioned whether a new type of glass-ceramics (BGS-7) coating (CaO-SiO2 -P2 O5 -B2 O3 ) would improve the osseointegration of Steinman pins (S-pins) both biomechanically and histomorphometrically. An in vivo study was performed using rabbits by inserting three S-pins into each iliac bone. The pins were 2.2-mm S-pins with a coating of 30-μm-thick BGS-7 and 550-nm-thick hydroxyapatite (HA), as opposed to an S-pin without coating. A tensile strength test and histomorphometrical evaluation was performed. In the 2-week group, the BGS-7 implant showed a significantly higher tensile strength than the S-pin. In the 4- and 8-week groups, the BGS-7 implants had significantly higher tensile strengths than the S-pins and HA implants. The histomorphometrical study revealed that the BGS-7 implant had a significantly higher contact ratio than the S-pin and HA implants in the 4-week group. The biomechanical and histomorphometrical tests showed that the BGS-7 coating had superior bone bonding properties than the groups without the coating from the initial stage of insertion. The BGS-7 coating of an S-pin will enhance the bone bonding strength, and there might also be an advantage in human bone bonding. © 2013, Copyright the Authors. Artificial Organs © 2013, International Center for Artificial Organs and Transplantation and Wiley Periodicals, Inc.

  2. Low-cost amplifier for alpha detection with photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Domienikan, Cláudio; Costa, Priscila; Genezini, Frederico A.; Zahn, Guilherme S., E-mail: clanikan@ipen.br, E-mail: pcosta@ipen.br, E-mail: fredzini@ipen.br, E-mail: gzahn@ipen.br [Instituto de Pesquisas Energéticas e Nucleares (IPEN/CNEN-SP), São Paulo, SP (Brazil)

    2017-07-01

    A low-cost amplifier for Hamamatsu S3590-09 PIN photodiode to be used in alpha detection is presented. This amplifier consists basically of two circuits: a pulse preamplifier and a shaper-driver. The PIN photodiode is reverse-biased and connected to a charge preamplifier input. Incident alpha particles generate a small current pulse in the photodiode. The integrating circuit of the low noise preamplifier transforms current pulse into a voltage pulse with amplitude proportional to the charge carried by the current pulse. The shaper-driver consists of a differentiator and an integrator and is responsible for filtering and further amplifying the preamplifier signal, generating a NIM-compatible energy pulse. The performance of the set photodiode-amplifier was successively tested through the use of a {sup 243}Am radioactive source. The low-cost photodiode amplifier was designed and constructed at IPEN - CNEN/SP using national components and expertise. (author)

  3. A transimpedance amplifier for excess noise measurements of high junction capacitance avalanche photodiodes

    International Nuclear Information System (INIS)

    Green, James E; David, John P R; Tozer, Richard C

    2012-01-01

    This paper reports a novel and versatile system for measuring excess noise and multiplication in avalanche photodiodes (APDs), using a bipolar junction transistor based transimpedance amplifier front-end and based on phase-sensitive detection, which permits accurate measurement in the presence of a high dark current. The system can reliably measure the excess noise factor of devices with capacitance up to 5 nF. This system has been used to measure thin, large area Si pin APDs and the resulting data are in good agreement with measurements of the same devices obtained from a different noise measurement system which will be reported separately. (paper)

  4. Characteristics of Si-PIN diode X-ray detector with DSP electronics

    International Nuclear Information System (INIS)

    Dutta, Juhi; Tapader, Srijita; Bisoi, Abhijit; Ray, Sudatta; Saha Sarkar, M.; Pramanik, Dibyadyuti; Saha, Archisman

    2012-01-01

    In the present work, the studies to investigate the features of PIN diodes detector coupled with a digital processor have been extended. At low energies, backscattered Compton peaks are close in energy to photo peak of the gamma of interest. Thus the backscattered peaks pose a serious problem in the analysis of spectra of low energy gamma rays. It has been initiated some measurements to quantitatively estimate the same as function of energy and Z of the scatterer. Recently there has been application of backscattering in high-resolution gamma backscatter imaging for technical applications

  5. Effect of resonant tunneling on electroluminescence in nc-Si/SiO2 multilayers-based p-i-n structure

    International Nuclear Information System (INIS)

    Chen, D.Y.; Wang, Y.Y.; Sun, Y.; He, Y.J.; Zhang, G.

    2015-01-01

    P-i-n structures with SiO 2 /nc-Si/SiO 2 multilayers as intrinsic layer were prepared in conventional plasma enhanced chemical vapor deposition system. Their carrier transport and electroluminescence properties were investigated. Two resonant tunneling related current peaks with current dropping gradually under forward bias were observed in the current voltage curve. Non-uniformity of the interfaces might be responsible for the gradual dropping of the current. Electroluminescence intensity of the device under bias of 7 V which is near the resonant tunneling peak voltage of 7.2 V was weaker than that under 6.5 V. According to the Gaussian fitting results of the spectra, the intensity of the sub-peak of 650 nm originating from recombination of injected electrons and holes was decreased the most. When resonant tunneling conditions are met, it might be that most of the injected electrons participate in resonant tunneling and fewer in Pool–Frenkel tunneling, which is the main carrier transport mechanism, to contribute to electroluminescence intensity. - Highlights: • Two resonant tunneling peaks with current dropping gradually were observed. • The EL intensity of the structure under resonant tunneling peak voltage is weakened. • P–F tunneling is the main transport mechanism besides resonant tunneling

  6. Low power frontend ASIC (Anusuchak) for dosimeter using Si-PIN detector

    International Nuclear Information System (INIS)

    Darad, A.; Chandratre, V.B.

    2010-01-01

    A low power ASIC (Anusuchak) for silicon PIN detector signal processing channel designed for pocket dosimeter in 0.35 μm CMOS process. The ASIC contains two channels one for Beta particle and other for Gamma ray. The channel is a CSA integrated with a shaper, gain stage and comparator with total power consumption of 4.6 mW. The ASIC has gain of 12 mV/fC and can be raised to 29 mV/fC without degrading the noise, power or linearity specification of the channel. The channel has a peaking time of 1.2 μs with baseline recovery within 5.3 μs and noise figure of 420 e- at 0 pF. The noise slope is 17 e-/pF. The ASIC is designed for single supply of 3.3 V for which battery is available. (author)

  7. Pinning-free GaAs MIS structures with Si interface control layers formed on (4 x 6) reconstructed (0 0 1) surface

    Energy Technology Data Exchange (ETDEWEB)

    Anantathanasarn, Sanguan; Hasegawa, Hideki

    2003-06-30

    (0 0 1)-Oriented GaAs metal-insulator-semiconductor (MIS) structures having a silicon interface control layer (Si ICL) were fabricated on surfaces having Ga-rich (4x6) reconstructions. Si ICL was grown by molecular beam epitaxy. MIS structures were fabricated by partially converting Si ICL to SiN{sub x} by direct nitridation, and further depositing a thick SiO{sub 2} layer on top as the main passivation dielectric by plasma-assisted chemical vapor deposition. Reflection high-energy electron diffraction, in situ X-ray photoelectron spectroscopy and MIS capacitance-voltage (C-V) techniques were used for characterization. The initial surface reconstruction was found to have a surprisingly strong effect on the degree of Fermi level pinning at the MIS interface. In contrast to the standard As-rich (2x4) surface, which results in strongly pinned MIS interfaces, the novel SiO{sub 2}/SiN{sub x}/Si ICL/GaAs MIS structures formed on ''genuine'' (4x6) surface realized complete unpinning of Fermi level over the entire band gap with a minimum interface state density of 4x10{sup 10} cm{sup -2} eV{sup -1} range.

  8. MFM observations of domain wall creep and pinning effects in amorphous CoxSi1-x films with diluted arrays of antidots

    International Nuclear Information System (INIS)

    Rodriguez-Rodriguez, G; Perez-Junquera, A; Velez, M; Anguita, J V; Martin, J I; Rubio, H; Alameda, J M

    2007-01-01

    Magnetic force microscopy (MFM) has been used to analyse the behaviour of domain walls in uniaxial amorphous Co x Si 1-x films patterned with diluted arrays of antidots by electron beam lithography. The walls are found to be pinned by the antidot array when the antidot density is high enough along the easy axis. The expansion of reversed nuclei under the influence of the tip stray field has been observed in several consecutive MFM images of the same area, showing how the competition between line tension effects and pinning by the patterned holes governs the creep motion of the 180 0 walls across the array of antidots

  9. Correlated vortex pinning in Si-nanoparticle doped MgB2

    OpenAIRE

    Kusevic, I.; Babic, E.; Husnjak, O.; Soltanian, S.; Wang, X. L.; Dou, S. X.

    2003-01-01

    The magnetoresistivity and critical current density of well characterized Si-nanoparticle doped and undoped Cu-sheathed MgB$_{2}$ tapes have been measured at temperatures $T\\geq 28$ K in magnetic fields $B\\leq 0.9$ T. The irreversibility line $B_{irr}(T)$ for doped tape shows a stepwise variation with a kink around 0.3 T. Such $B_{irr}(T)$ variation is typical for high-temperature superconductors with columnar defects (a kink occurs near the matching field $% B_{\\phi}$) and is very different ...

  10. Energy dispersive X-ray fluorescence from useless tyres samples with a Si PIN detector; Fluorescencia de raios X por dispersao em energia de amostras de pneus inserviveis com detector de Si-PIN

    Energy Technology Data Exchange (ETDEWEB)

    Lopes, Fabio; Scheibel, Viviane [Universidade Estadual de Londrina, PR (Brazil). Dept. de Fisica. Lab. de Fisica Nuclear Aplicada]. E-mail: bonn@uel.br; Melquiades, Fabio Luiz [Universidade Estadual do Centro-Oeste, Guarapuava, PR (Brazil). Dept. de Fisica; Moraes, Liz Mary Bueno de [Centro de Energia Nuclear na Agricultura (CENA), Piracicaba, SP (Brazil). Lab. de Instrumentacao Nuclear

    2005-07-01

    The concentration of Zn from discard tyre samples is of environmental interest, since on its production are used S for the rubber vulcanization process, and Zn O as reaction catalyze. The useless tyres are been used for asphalt pave, burn in cement industry and thermoelectric power plant and in erosion control of agriculture areas. Analyses of these samples requires frequently chemical digestion that is expensive and take a long time. Trying to eliminate these limitations, the objective of this work was use Energy Dispersive X Ray Fluorescence technique (EDXRF) with a portable system as the technique is multi elementary and needs a minimum sample preparation. Five useless tyres samples were grind in a knife mill and after this in a cryogenic mill, and analyzed in pellets form, using a X ray mini tube (Ag target, Mo {sub l}ter, 25 kV/20 {sub A}) for 200 s and a Si-PIN semiconductor detector coupled to a multichannel analyzer. Were obtained Zn concentrations in the range of 40.6 to 44.2 {sub g} g{sub 1}, representing nearly 0.4. (author)

  11. Energy-dispersive X-ray fluorescence of discarded tire samples, using a Si-PIN detector; Fluorescencia de raios X por dispersao em energia de amostras de pneus inserviveis com detector de Si-Pin

    Energy Technology Data Exchange (ETDEWEB)

    Lopes, Fabio; Appoloni, C.R., E-mail: bonn@uel.b [Universidade Estadual de Londrina (UEL), PR (Brazil). Dept. de Fisica. Lab. de Fisica Nuclear Aplicada; Melquiades, Fabio L. [Universidade Estadual do Centro Oeste (UNICENTRO), Guarapuava, PR (Brazil). Dept. de Fisica

    2007-07-01

    The determination of zinc concentration in samples of discarded tires is of great environmental interest because the process for manufacturing tyres uses S for rubber vulcanization, and ZnO is the reaction catalyst. Discarded tyres are being used in asphalt paving, in the burning process of thermoelectric and cement industries and also for controlling erosion in agricultural areas. Analysis of tyre samples usually requires chemical digestion which is slow and expensive. Aiming to eliminate those limitations, this work uses energy-dispersive X-ray fluorescence (EDXRF) with a portable equipment, once it is a simultaneous multi-element analytical technique, requiring minimal sample preparation. Five samples of discarded tyres have been ground and analysed in the form of pastilles, using a mini X-ray tube (Ag target, MO filter, 25 kV/20 muA) for 200 s, and a Si-PIN semiconductor detector coupled to a multichannel analyser. Zinc concentrations in the range of 40.6 to 44.2 mug g{sup -1} have been obtained, representing 0.4% of the tire composition, which is below the maximum value (2%) recommended by the European Tyre Recycling Association. Concentrations between 0.15 and 0.52 mug g{sup -1} were obtained for Fe

  12. Fabrication of Eu doped CdO [Al/Eu-nCdO/p-Si/Al] photodiodes by perfume atomizer based spray technique for opto-electronic applications

    Science.gov (United States)

    Ravikumar, M.; Ganesh, V.; Shkir, Mohd; Chandramohan, R.; Arun Kumar, K. Deva; Valanarasu, S.; Kathalingam, A.; AlFaify, S.

    2018-05-01

    In this study, thin films of cadmium oxide (CdO) with different concentrations (0, 1, 3, and 5 wt%) of Eu doping were deposited onto Si and glass substrates by a novel and facile spray technique using simple perfume atomizer for the first time. Prepared films were characterized for structural, morphological, optical properties and the photo diode studies, using X-ray diffraction, scanning electron microscope, UV-Vis spectrophotometer, Isbnd V characteristics, and fundamental parameters are reported. All the prepared Eu:CdO films exhibit cubic structure. The preferential orientation is along (200) plane. Scanning electron microscopy study indicates the growth of smooth and pin-hole free films with clusters of homogeneous grains. The values of band gap energy are found to be varying from 2.42 to 2.33 eV for various Eu doping concentration from 0 to 5 wt%. EDAX studies revealed the presence of Eu, Cd and O elements without any other impurities. FTIR spectra showed a peak at 575 cm-1 confirming the stretching mode of Cdsbnd O. The resistivity (ρ), high carrier concentration (n) and carrier mobility (μ) for 3 wt% CdO thin film are found to be 0.452 × 10-3(Ω.cm), 17.82 × 1020 cm-3 and 7.757 cm2/V, respectively. Current-voltage measurements on the fabricated nanostructured Al/Eu-nCdO/p-Si/Al heterojunction device showed a non-linear electric characteristics indicating diode like behaviour.

  13. Energy-dispersive X-ray fluorescence of discarded tire samples, using a Si-PIN detector

    International Nuclear Information System (INIS)

    Lopes, Fabio; Appoloni, C.R.; Melquiades, Fabio L.

    2007-01-01

    The determination of zinc concentration in samples of discarded tires is of great environmental interest because the process for manufacturing tyres uses S for rubber vulcanization, and ZnO is the reaction catalyst. Discarded tyres are being used in asphalt paving, in the burning process of thermoelectric and cement industries and also for controlling erosion in agricultural areas. Analysis of tyre samples usually requires chemical digestion which is slow and expensive. Aiming to eliminate those limitations, this work uses energy-dispersive X-ray fluorescence (EDXRF) with a portable equipment, once it is a simultaneous multi-element analytical technique, requiring minimal sample preparation. Five samples of discarded tyres have been ground and analysed in the form of pastilles, using a mini X-ray tube (Ag target, MO filter, 25 kV/20 μA) for 200 s, and a Si-PIN semiconductor detector coupled to a multichannel analyser. Zinc concentrations in the range of 40.6 to 44.2 μg g -1 have been obtained, representing 0.4% of the tire composition, which is below the maximum value (2%) recommended by the European Tyre Recycling Association. Concentrations between 0.15 and 0.52 μg g -1 were obtained for Fe

  14. A high-sensitivity, fast-response, rapid-recovery p–n heterojunction photodiode based on rutile TiO{sub 2} nanorod array on p-Si(1 1 1)

    Energy Technology Data Exchange (ETDEWEB)

    Selman, Abbas M., E-mail: alabbasiabbas@yahoo.co.uk [Nano-Optoelectronics Research and Technology Laboratory (N.O.R.), School of Physics, Universiti Sains Malaysia, Penang 11800 (Malaysia); Department of Pharmacology and Toxicology, College of Pharmacy, University of Kufa, Najaf (Iraq); Hassan, Z.; Husham, M.; Ahmed, Naser M. [Nano-Optoelectronics Research and Technology Laboratory (N.O.R.), School of Physics, Universiti Sains Malaysia, Penang 11800 (Malaysia)

    2014-06-01

    The growth and characterization of a p–n heterojunction photodiode were studied. This photodiode was based on rutile TiO{sub 2} nanorods (NRs) grown on p-type (1 1 1)-oriented silicon substrate seeded with a TiO{sub 2} layer synthesized by radio-frequency (RF) reactive magnetron sputtering. Chemical bath deposition (CBD) was performed to grow rutile TiO{sub 2} NRs on Si substrate. The structural and optical properties of the sample were studied by X-ray diffraction (XRD) and field emission-scanning electron microscopy (FESEM) analyses. Results showed the tetragonal rutile structure of the synthesized TiO{sub 2} NRs. Optical properties were further examined by photoluminescence spectroscopy, and a high-intensity UV peak centered at around 392 nm compared with visible defect peaks centered at 527 and 707 nm was observed. Upon exposure to 395 nm light (2.3 mW/cm) at five-bias voltage, the device showed 2.9 × 10{sup 2} sensitivity. In addition, the internal gain of the photodiode was 3.92, and the photoresponse peak was 106 mA/W. Furthermore, the photocurrent was 3.06 × 10{sup −4} A. The response and the recovery times were calculated to be 10.4 and 11 ms, respectively, upon illumination to a pulse UV light (405 nm, 0.22 mW/cm{sup 2}) at five-bias voltage. All of these results demonstrate that this high-quality photodiode can be a promising candidate as a low-cost UV photodetector for commercially integrated photoelectronic applications.

  15. Advanced staring Si PIN visible sensor chip assembly for Bepi-Colombo mission to Mercury

    Science.gov (United States)

    Mills, R. E.; Drab, J. J.; Gin, A.

    2009-08-01

    The planet Mercury, by its near proximity to the sun, has always posed a formidable challenge to spacecraft. The Bepi-Colombo mission, coordinated by the European Space Agency, will be a pioneering effort in the investigation of this planet. Raytheon Vision Systems (RVS) has been given the opportunity to develop the radiation hardened, high operability, high SNR, advanced staring focal plane array (FPA) for the spacecraft destined (Fig. 1) to explore the planet Mercury. This mission will launch in 2013 on a journey lasting approximately 6 years. When it arrives at Mercury in August 2019, it will endure temperatures as high as 350°C as well as relatively high radiation environments during its 1 year data collection period from September 2019 until September 2020. To support this challenging goal, RVS has designed and produced a custom visible sensor based on a 2048 x 2048 (2k2) format with a 10 μm unit cell. This sensor will support both the High Resolution Imaging Camera (HRIC) and the Stereo Camera (STC) instruments. This dual purpose sensor was designed to achieve high sensitivity as well as low input noise (<100 e-) for space-based, low light conditions. It also must maintain performance parameters in a total ionizing dose environment up to 70 kRad (Si) as well as immunity to latch-up and singe event upset. This paper will show full sensor chip assembly data highlighting the performance parameters prior to irradiation. Radiation testing performance will be reported by an independent source in a subsequent paper.

  16. Modeling charge collection efficiency degradation in partially depleted GaAs photodiodes using the 1- and 2-carrier Hecht equations

    International Nuclear Information System (INIS)

    Auden, E.C.; Vizkelethy, G.; Serkland, D.K.; Bossert, D.J.; Doyle, B.L.

    2017-01-01

    The Hecht equation can be used to model the nonlinear degradation of charge collection efficiency (CCE) in response to radiation-induced displacement damage in both fully and partially depleted GaAs photodiodes. CCE degradation is measured for laser-generated photocurrent as a function of fluence and bias in Al_0_._3Ga_0_._7As/GaAs/Al_0_._2_5Ga_0_._7_5As p-i-n photodiodes which have been irradiated with 12 MeV C and 7.5 MeV Si ions. CCE is observed to degrade more rapidly with fluence in partially depleted photodiodes than in fully depleted photodiodes. When the intrinsic GaAs layer is fully depleted, the 2-carrier Hecht equation describes CCE degradation as photogenerated electrons and holes recombine at defect sites created by radiation damage in the depletion region. If the GaAs layer is partially depleted, CCE degradation is more appropriately modeled as the sum of the 2-carrier Hecht equation applied to electrons and holes generated within the depletion region and the 1-carrier Hecht equation applied to minority carriers that diffuse from the field-free (non-depleted) region into the depletion region. Enhanced CCE degradation is attributed to holes that recombine within the field-free region of the partially depleted intrinsic GaAs layer before they can diffuse into the depletion region.

  17. Modeling charge collection efficiency degradation in partially depleted GaAs photodiodes using the 1- and 2-carrier Hecht equations

    Energy Technology Data Exchange (ETDEWEB)

    Auden, E.C., E-mail: eauden@sandia.gov; Vizkelethy, G.; Serkland, D.K.; Bossert, D.J.; Doyle, B.L.

    2017-05-15

    The Hecht equation can be used to model the nonlinear degradation of charge collection efficiency (CCE) in response to radiation-induced displacement damage in both fully and partially depleted GaAs photodiodes. CCE degradation is measured for laser-generated photocurrent as a function of fluence and bias in Al{sub 0.3}Ga{sub 0.7}As/GaAs/Al{sub 0.25}Ga{sub 0.75}As p-i-n photodiodes which have been irradiated with 12 MeV C and 7.5 MeV Si ions. CCE is observed to degrade more rapidly with fluence in partially depleted photodiodes than in fully depleted photodiodes. When the intrinsic GaAs layer is fully depleted, the 2-carrier Hecht equation describes CCE degradation as photogenerated electrons and holes recombine at defect sites created by radiation damage in the depletion region. If the GaAs layer is partially depleted, CCE degradation is more appropriately modeled as the sum of the 2-carrier Hecht equation applied to electrons and holes generated within the depletion region and the 1-carrier Hecht equation applied to minority carriers that diffuse from the field-free (non-depleted) region into the depletion region. Enhanced CCE degradation is attributed to holes that recombine within the field-free region of the partially depleted intrinsic GaAs layer before they can diffuse into the depletion region.

  18. Fabrication and characterization of a 32 x 32 array digital Si-PIN X-ray detector for a single photon counting image sensor

    International Nuclear Information System (INIS)

    Seo, Jungho; Kim, Jinyoung; Lim, Hyunwoo; Park, Jingoo; Lee, Songjun; Kim, Bonghoe; Jeon, Sungchae; Huh, Young

    2010-01-01

    A Si-PIN X-ray detector for digital x-ray imaging with single photon counting capability has been fabricated and characterized. It consists of an array of 32 x 32 pixels with an area of 80 x 80 μm 2 . An extrinsic gettering process was performed to reduce the leakage current by removing the impurities and defects from the X-ray detector's Si substrate. Multiple guard-rings (MGRs) and metal filed plates (MFPs) techniques were adopted to reduce the leakage current and to improve the breakdown performance. The simulation verified that the breakdown voltage was improved with the MGRs and that the leakage current was significantly reduced with the MFPs. The electrical properties, such as the leakage current and the breakdown voltage, of the Si-PIN X-ray detector were characterized. The extrinsic gettering process played a significant role in reducing the leakage current, and a leakage current lower than 60 pA could be achieved at 100 V dc .

  19. Origin analysis of expanded stacking faults by applying forward current to 4H-SiC p-i-n diodes

    Science.gov (United States)

    Hayashi, Shohei; Naijo, Takanori; Yamashita, Tamotsu; Miyazato, Masaki; Ryo, Mina; Fujisawa, Hiroyuki; Miyajima, Masaaki; Senzaki, Junji; Kato, Tomohisa; Yonezawa, Yoshiyuki; Kojima, Kazutoshi; Okumura, Hajime

    2017-08-01

    Stacking faults expanded by the application of forward current to 4H-SiC p-i-n diodes were observed using a transmission electron microscope to investigate the expansion origin. It was experimentally confirmed that long-zonal-shaped stacking faults expanded from basal-plane dislocations converted into threading edge dislocations. In addition, stacking fault expansion clearly penetrated into the substrate to a greater depth than the dislocation conversion point. This downward expansion of stacking faults strongly depends on the degree of high-density minority carrier injection.

  20. Gallium-based avalanche photodiode optical crosstalk

    International Nuclear Information System (INIS)

    Blazej, Josef; Prochazka, Ivan; Hamal, Karel; Sopko, Bruno; Chren, Dominik

    2006-01-01

    Solid-state single photon detectors based on avalanche photodiode are getting more attention in various areas of applied physics: optical sensors, quantum key distribution, optical ranging and Lidar, time-resolved spectroscopy, X-ray laser diagnostics, and turbid media imaging. Avalanche photodiodes specifically designed for single photon counting semiconductor avalanche structures have been developed on the basis of various materials: Si, Ge, GaP, GaAsP, and InGaP/InGaAs at the Czech Technical University in Prague during the last 20 years. They have been tailored for numerous applications. Trends in demand are focused on detection array construction recently. Even extremely small arrays containing a few cells are of great importance for users. Electrical crosstalk between individual gating and quenching circuits and optical crosstalk between individual detecting cells are serious limitation for array design and performance. Optical crosstalk is caused by the parasitic light emission of the avalanche which accompanies the photon detection process. We have studied in detail the optical emission of the avalanche photon counting structure in the silicon- and gallium-based photodiodes. The timing properties and spectral distribution of the emitted light have been measured for different operating conditions to quantify optical crosstalk. We conclude that optical crosstalk is an inherent property of avalanche photodiode operated in Geiger mode. The only way to minimize optical crosstalk in avalanche photodiode array is to build active quenching circuit with minimum response time

  1. Enhancement of the critical current density and flux pinning of MgB2 superconductor by nanoparticle SiC doping

    Science.gov (United States)

    Dou, S. X.; Soltanian, S.; Horvat, J.; Wang, X. L.; Zhou, S. H.; Ionescu, M.; Liu, H. K.; Munroe, P.; Tomsic, M.

    2002-10-01

    Doping of MgB2 by nano-SiC and its potential for the improvement of flux pinning were studied for MgB2-x)(SiCx/2 with x=0, 0.2, and 0.3 and for 10 wt % nano-SiC-doped MgB2 samples. Cosubstitution of B by Si and C counterbalanced the effects of single-element doping, decreasing Tc by only 1.5 K, introducing intragrain pinning centers effective at high fields and temperatures, and significantly enhancing Jc and Hirr. Compared to the undoped sample, Jc for the 10 wt % doped sample increased by a factor of 32 at 5 K and 8 T, 42 at 20 K and 5 T, and 14 at 30 K and 2 T. At 20 K and 2 T, the Jc for the doped sample was 2.4 x105 A/cm2, which is comparable to Jc values for the best Ag/Bi-2223 tapes. At 20 K and 4 T, Jc was twice as high as for the best MgB2 thin films and an order of magnitude higher than for the best Fe/MgB2 tapes. The magnetic Jc is consistent with the transport Jc which remains at 20 000 A/cm2 even at 10 T and 5 K for the doped sample, an order of magnitude higher than the undoped one. Because of such high performance, it is anticipated that the future MgB2 conductors will be made using a formula of MgBxSiyCz instead of pure MgB2.

  2. Characterization of various Si-photodiode junction combinations and layout specialities in 0.18µm CMOS and HV-CMOS technologies

    Science.gov (United States)

    Jonak-Auer, I.; Synooka, O.; Kraxner, A.; Roger, F.

    2017-12-01

    With the ongoing miniaturization of CMOS technologies the need for integrated optical sensors on smaller scale CMOS nodes arises. In this paper we report on the development and implementation of different optical sensor concepts in high performance 0.18µm CMOS and high voltage (HV) CMOS technologies on three different substrate materials. The integration process is such that complete modularity of the CMOS processes remains untouched and no additional masks or ion implantation steps are necessary for the sensor integration. The investigated processes support 1.8V and 3V standard CMOS functionality as well as HV transistors capable of operating voltages of 20V and 50V. These processes intrinsically offer a wide variety of junction combinations, which can be exploited for optical sensing purposes. The availability of junction depths from submicron to several microns enables the selection of spectral range from blue to infrared wavelengths. By appropriate layout the contributions of photo-generated carriers outside the target spectral range can be kept to a minimum. Furthermore by making use of other features intrinsically available in 0.18µm CMOS and HV-CMOS processes dark current rates of optoelectronic devices can be minimized. We present TCAD simulations as well as spectral responsivity, dark current and capacitance data measured for various photodiode layouts and the influence of different EPI and Bulk substrate materials thereon. We show examples of spectral responsivity of junction combinations optimized for peak sensitivity in the ranges of 400-500nm, 550-650nm and 700-900nm. Appropriate junction combination enables good spectral resolution for colour sensing applications even without any additional filter implementation. We also show that by appropriate use of shallow trenches dark current values of photodiodes can further be reduced.

  3. GaAsPN-based PIN solar cells MBE-grown on GaP substrates: toward the III-V/Si tandem solar cell

    Science.gov (United States)

    Da Silva, M.; Almosni, S.; Cornet, C.; Létoublon, A.; Levallois, C.; Rale, P.; Lombez, L.; Guillemoles, J.-F.; Durand, O.

    2015-03-01

    GaAsPN semiconductors are promising material for the elaboration of high efficiencies tandem solar cells on silicon substrates. GaAsPN diluted nitride alloy is studied as the top junction material due to its perfect lattice matching with the Si substrate and its ideal bandgap energy allowing a perfect current matching with the Si bottom cell. We review our recent progress in materials development of the GaAsPN alloy and our recent studies of some of the different building blocks toward the elaboration of a PIN solar cell. A lattice matched (with a GaP(001) substrate, as a first step toward the elaboration on a Si substrate) 1μm-thick GaAsPN alloy has been grown by MBE. After a post-growth annealing step, this alloy displays a strong absorption around 1.8-1.9 eV, and efficient photoluminescence at room temperature suitable for the elaboration of the targeted solar cell top junction. Early stage GaAsPN PIN solar cells prototypes have been grown on GaP (001) substrates, with 2 different absorber thicknesses (1μm and 0.3μm). The external quantum efficiencies and the I-V curves show that carriers have been extracted from the GaAsPN alloy absorbers, with an open-circuit voltage of 1.18 V, while displaying low short circuit currents meaning that the GaAsPN structural properties needs a further optimization. A better carrier extraction has been observed with the absorber displaying the smallest thickness, which is coherent with a low carriers diffusion length in our GaAsPN compound. Considering all the pathways for improvement, the efficiency obtained under AM1.5G is however promising.

  4. GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates

    Science.gov (United States)

    Gutiérrez, M.; Lloret, F.; Jurczak, P.; Wu, J.; Liu, H. Y.; Araújo, D.

    2018-05-01

    The objective of this work is the integration of InGaAs/GaSb/GaAs heterostructures, with high indium content, on GaAs and Si commercial wafers. The design of an interfacial misfit dislocation array, either on GaAs or Si substrates, allowed growth of strain-free devices. The growth of purposely designed superlattices with their active region free of extended defects on both GaAs and Si substrates is demonstrated. Transmission electron microscopy technique is used for the structural characterization and plastic relaxation study. In the first case, on GaAs substrates, the presence of dopants was demonstrated to reduce several times the threading dislocation density through a strain-hardening mechanism avoiding dislocation interactions, while in the second case, on Si substrates, similar reduction of dislocation interactions is obtained using an AlSb/GaSb superlattice. The latter is shown to redistribute spatially the interfacial misfit dislocation array to reduce dislocation interactions.

  5. 11.72 sq cm SiC Wafer-scale Interconnected 64 kA PiN Diode

    Science.gov (United States)

    2012-01-30

    drop of 10.3 V. The dissipated energy was 382 J and the calculated action exceeded 1.7 MA2 -s. Preliminary development of high voltage interconnection...scale diode action (surge current integral), a key reliability parameter, exceeded 1.7 MA2 -s. Figure 6: The wafer-scale interconnected diode...scale diode was 382 J and the calculated action exceeded 1.7 MA2 -sec. High voltage operation of PiN diodes, thyristors, and other semiconductor

  6. A Ring-shaped photodiode designed for use in a reflectance pulse oximetry sensor in wireless health monitoring applications

    DEFF Research Database (Denmark)

    Duun, Sune; Haahr, Rasmus Grønbek; Birkelund, Karen

    2010-01-01

    We report a photodiode for use in a reflectance pulse oximeter for use in autonomous and low-power homecare applications. The novelty of the reflectance pulse oximeter is a large ring shaped backside silicon pn photodiode. The ring-shaped photodiode gives optimal gathering of light and thereby...... enable very low light-emitting diode (LED) driving currents for the pulse oximeter. The photodiode also have a two layer SiO2/SiN interference filter yielding 98% transmission at the measuring wavelengths, 660 nm and 940 nm, and suppressing other wavelengths down to 50% transmission. The photodiode has...

  7. Improved flux pinning behaviour in bulk MgB2 achieved by nano-SiO2 addition

    International Nuclear Information System (INIS)

    Rui, X F; Zhao, Y; Xu, Y Y; Zhang, L; Sun, X F; Wang, Y Z; Zhang, H

    2004-01-01

    Bulk MgB 2 with SiO 2 nanoparticles added has been synthesized using a simple solid-state reaction route. The lattice constant in the c direction increases with additive content due to a small amount of Si being doped into the lattice of the MgB 2 ; however, T c is almost fixed at 37.2 K. The addition of SiO 2 nanoparticles also improves the J c -H and H irr -T characteristics of MgB 2 when the additive content is lower than 7%. At 20 K and 1 T, J c for the sample with 7% additive content reaches 2.5 x 10 5 A cm -2 . Microstructural analysis reveals that a high density of MgSi 2 nanoparticles (10-50 nm) exists inside the MgB 2 grains, leading to the formation of a nanocomposite superconductor

  8. Performance of Ce-doped (La, Gd).sub.2./sub.Si.sub.2./sub.O.sub.7./sub. scintillator with an avalanche photodiode

    Czech Academy of Sciences Publication Activity Database

    Kurosawa, S.; Shishido, T.; Suzuki, A.; Pejchal, Jan; Yokota, Y.; Yoshikawa, A.

    2014-01-01

    Roč. 744, Apr (2014), 30-34 ISSN 0168-9002 Institutional support: RVO:68378271 Keywords : scintillator * Ce-doped (La, Gd) 2 Si 2 O 7 * temperature dependence * APD Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.216, year: 2014

  9. Solar-blind AlxGa1-xN/AlN/SiC photodiodes with a polarization-induced electron filter

    Science.gov (United States)

    Rodak, L. E.; Sampath, A. V.; Gallinat, C. S.; Chen, Y.; Zhou, Q.; Campbell, J. C.; Shen, H.; Wraback, M.

    2013-08-01

    Heterogeneous n-III-nitride/i-p silicon carbide (SiC) photodetectors have been demonstrated that enable the tailoring of the spectral response in the solar blind region below 280 nm. The negative polarization induced charge at the aluminum gallium nitride (AlxGa1-xN)/aluminum nitride (AlN) interface in conjunction with the positive polarization charge at the AlN/SiC interface creates a large barrier to carrier transport across the interface that results in the selective collection of electrons photoexcited to the Γ and L valleys of SiC while blocking the transport of electrons generated in the M valley. In addition, the AlxGa1-xN alloys act as transparent windows that enhance the collection of carriers generated by high energy photons in the fully depleted SiC absorption regions. These two factors combine to create a peak external quantum efficiency of 76% at 242 nm, along with a strong suppression of the long-wavelength response from 260 nm to 380 nm.

  10. Pin care

    Science.gov (United States)

    ... Drugs & Supplements Videos & Tools Español You Are Here: Home → Medical Encyclopedia → Pin care URL of this page: //medlineplus.gov/ency/patientinstructions/000481.htm Pin care To use the sharing features on this page, please enable JavaScript. Broken bones can be fixed in surgery with metal ...

  11. Properties of films and p-i-n photo-transformed structures on the basis of a-Si:H and its alloys, received in glow discharge of a constant current

    International Nuclear Information System (INIS)

    Tauasarov, K.

    1997-01-01

    The work devoted to investigation and control of structural, optical and photoelectric properties of films of amorphous hydrogenated silicon and its alloys, deposited in glow discharge of a constant current were done, creation of photo transformed p-i-n structures investigation its photoelectric characteristics. The main results and conclusions: A new method of deposition in glow discharge of a constant current qualitative doping and un doping a-Si:H layer and p-i-n structures on the basis of amorphous hydrogenated silicon was developed. For reception of amorphous p + and n - films for first time synthesised and applied mono-silborina and mono-silphosfin, containing pointed Si-B and Si-P linkages. New layered linear - organized structure in the films a-Si:H (T=200 deg C) was found out with distance between layers 7,5 A-o. Degree of crystallinity from combinational spectrum was determined. Concentration of films and connection between a hydrogen and silicon was determined from a IR-spectrum. It was shown that introduction of vary zone p + layer from a-Si x C 1-x :H into photo transformed p-i-n structure on the basis of a-Si:H results to decreasing of recombination losses in the area of p-i hetero boundary, and as result a photosensitive in the short-wave area of a spectrum increased. Best p-i-n structures in condition of natural illumination had following parameters: density of current of short circuit I sc =12,9 m A/cm 2 , voltage in single course U lm =0,85 V, factor of Ff.=0,55 filling and h=7% efficiency. (author)

  12. Optimization of actinides trace precipitation on diamond/Si PIN sensor for alpha-spectrometry in aqueous solution

    International Nuclear Information System (INIS)

    Tran, Q.T.; Pomorski, M.; Sanoit, J. de; Mer-Calfati, C.; Scorsone, E.; Bergonzo, P.

    2014-01-01

    We report here on a new approach for the detection and identification of actinides (Pu, Am, Cm, etc). This approach is based on the use of a novel device consisting of a boron doped nanocrystalline diamond film deposited onto a silicon PIN diode alpha particle sensor. The actinides concentration is probed in situ in the measuring solution using a method based on electro-precipitation that can be carried out via the use of a doped diamond electrode. The device allows probing directly both alpha-particles activity and energy in liquid solutions. In this work, we address the optimization of the actinides electro-precipitation step onto the sensor. The approach is based on fine tuning the pH of the electrolyte, the nature of the supporting electrolytes (Na_2SO_4 or NaNO_3), the electrochemical cell geometry, the current density value, the precipitation duration as well as the sensor surface area. The deposition efficiency was significantly improved with values reaching for instance up to 81.5% in the case of electro-precipitation of 5.96 Bq "2"4"1Am on the sensor. The diamond/silicon sensor can be reused after measurement by performing a fast decontamination step at high yields 99%, where the "2"4"1Am electro-precipitated layer is quickly removed by applying an anodic current (+2 mA.cm"-"2 for 10 minutes) to the boron doped nanocrystalline diamond electrode in aqueous solution. This study demonstrated that alpha-particle spectroscopic measurements could be made feasible for the first time in aqueous solutions after an electrochemical deposition process, with theoretical detections thresholds as low as 0.24 Bq.L"-"1. We believe that this approach can be of very high interest for alpha-particle spectroscopy in liquids for actinides trace detection. (authors)

  13. Electrical Properties of Photodiode Ba0.25Sr0.75TiO3 (BST Thin Film Doped with Ferric Oxide on p-type Si (100 Substrate using Chemical Solution Deposition Method

    Directory of Open Access Journals (Sweden)

    Irzaman

    2011-12-01

    Full Text Available In this paper we have grown pure Ba0.25Sr0.75TiO3 (BST and BST doped by Ferric Oxide Fe2O3 (BFST with doping variations of 5%, 10%, and 15% above type-p Silicon (100 substrate using the chemical solution deposition (CSD method with spin coating technique at rotation speed of 3000 rpm, for 30 seconds. BST thin film are made with a concentration of 1 M 2-methoxyethanol and annealing temperature of 850OC for the Si (100 substrate. Characterization of the thin film is performed for the electrical properties such as the current-voltage (I-V curve using Keithley model 2400 as well as dielectric constant, time constant, pyroelectric characteristics, and depth measurement. The results show that the thin film depth increases if the concentration of the Ferric Oxide doping increases. The I-V characterization shows that the BST and BFST thin film has photodiode properties. The dielectric constant increases with the addition of doping. The maximum dielectric constant value is obtained for 15 % doping concentration namely 83.1 for pure BST and 6.89, 11.1, 41.63 and 83.1, respectively for the Ferric Oxide doping based BST with concentration of 5%, 10%, and 15%. XRD spectra of 15 % of ferric oxide doped BST thin film tetragonal phase, we carried out the lattice constant were a = b = 4.203 Å; c = 4.214 Å; c/a ratio = 1.003

  14. Improved bandwidth and quantum efficiency in silicon photodiodes using photon-manipulating micro/nanostructures operating in the range of 700-1060 nm

    Science.gov (United States)

    Cansizoglu, Hilal; Gao, Yang; Ghandiparsi, Soroush; Kaya, Ahmet; Perez, Cesar Bartolo; Mayet, Ahmed; Ponizovskaya Devine, Ekaterina; Cansizoglu, Mehmet F.; Yamada, Toshishige; Elrefaie, Aly F.; Wang, Shih-Yuan; Islam, M. Saif

    2017-08-01

    Nanostructures allow broad spectrum and near-unity optical absorption and contributed to high performance low-cost Si photovoltaic devices. However, the efficiency is only a few percent higher than a conventional Si solar cell with thicker absorption layers. For high speed surface illuminated photodiodes, the thickness of the absorption layer is critical for short transit time and RC time. Recently a CMOS-compatible micro/nanohole silicon (Si) photodiode (PD) with more than 20 Gb/s data rate and with 52 % quantum efficiency (QE) at 850 nm was demonstrated. The achieved QE is over 400% higher than a similar Si PD with the same thickness but without absorption enhancement microstructure holes. The micro/nanoholes increases the QE by photon trapping, slow wave effects and generate a collective assemble of modes that radiate laterally, resulting in absorption enhancement and therefore increase in QE. Such Si PDs can be further designed to enhance the bandwidth (BW) of the PDs by reducing the device capacitance with etched holes in the pin junction. Here we present the BW and QE of Si PDs achievable with micro/nanoholes based on a combination of empirical evidence and device modeling. Higher than 50 Gb/s data rate with greater than 40% QE at 850 nm is conceivable in transceivers designed with such Si PDs that are integrated with photon trapping micro and nanostructures. By monolithic integration with CMOS/BiCMOS integrated circuits such as transimpedance amplifiers, equalizers, limiting amplifiers and other application specific integrated circuits (ASIC), the data rate can be increased to more than 50 Gb/s.

  15. Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

    Science.gov (United States)

    Wang, Fang-Hsing; Kuo, Hsin-Hui; Yang, Cheng-Fu; Liu, Min-Chu

    2014-01-01

    In this study, silicon nitride (SiNx) thin films were deposited on polyimide (PI) substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD) system. The gallium-doped zinc oxide (GZO) thin films were deposited on PI and SiNx/PI substrates at room temperature (RT), 100 and 200 °C by radio frequency (RF) magnetron sputtering. The thicknesses of the GZO and SiNx thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiNx thin films were a working pressure of 800 × 10−3 Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH4 = 20 sccm and NH3 = 210 sccm, respectively. For the GZO/PI and GZO-SiNx/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiNx/PI substrates with thickness of ~000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si) thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiNx/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiNx/PI substrates to fabricate α-Si thin film solar cells, and the solar cells’ properties were also investigated. We had found that substrates to get the optimally solar cells’ efficiency were 200 °C-deposited GZO-SiNx/PI. PMID:28788494

  16. Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Fang-Hsing Wang

    2014-02-01

    Full Text Available In this study, silicon nitride (SiNx thin films were deposited on polyimide (PI substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD system. The gallium-doped zinc oxide (GZO thin films were deposited on PI and SiNx/PI substrates at room temperature (RT, 100 and 200 °C by radio frequency (RF magnetron sputtering. The thicknesses of the GZO and SiNx thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiNx thin films were a working pressure of 800 × 10−3 Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH4 = 20 sccm and NH3 = 210 sccm, respectively. For the GZO/PI and GZO-SiNx/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiNx/PI substrates with thickness of ~1000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiNx/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiNx/PI substrates to fabricate α-Si thin film solar cells, and the solar cells’ properties were also investigated. We had found that substrates to get the optimally solar cells’ efficiency were 200 °C-deposited GZO-SiNx/PI.

  17. Low-Noise Large-Area Photoreceivers with Low Capacitance Photodiodes

    Science.gov (United States)

    Joshi, Abhay M. (Inventor); Datta, Shubhashish (Inventor)

    2013-01-01

    A quad photoreceiver includes a low capacitance quad InGaAs p-i-n photodiode structure formed on an InP (100) substrate. The photodiode includes a substrate providing a buffer layer having a metal contact on its bottom portion serving as a common cathode for receiving a bias voltage, and successive layers deposited on its top portion, the first layer being drift layer, the second being an absorption layer, the third being a cap layer divided into four quarter pie shaped sections spaced apart, with metal contacts being deposited on outermost top portions of each section to provide output terminals, the top portions being active regions for detecting light. Four transimpedance amplifiers have input terminals electrically connected to individual output terminals of each p-i-n photodiode.

  18. Happy Pinning

    DEFF Research Database (Denmark)

    Fausing, Bent

    2012-01-01

    This is about Pinterest, but with a different approach than usual to social networks. Pinterest is an image site par excellence. The images are as Windows that open outwards and also lets us look inwards and displays the soul and heart, the unintentional or pre-conscious desires. Happy Pinning!...

  19. Leakage current of amorphous silicon p-i-n diodes made by ion shower doping

    International Nuclear Information System (INIS)

    Kim, Hee Joon; Cho, Gyuseong; Choi, Joonhoo; Jung, Kwan-Wook

    2002-01-01

    In this letter, we report the leakage current of amorphous silicon (a-Si:H) p-i-n photodiodes, of which the p layer is formed by ion shower doping. The ion shower doping technique has an advantage over plasma-enhanced chemical vapor deposition (PECVD) in the fabrication of a large-area amorphous silicon flat-panel detector. The leakage current of the ion shower diodes shows a better uniformity within a 30 cmx40 cm substrate than that of the PECVD diodes. However, it shows a higher leakage current of 2-3 pA/mm 2 at -5 V. This high current originates from the high injection current at the p-i junction

  20. A photodiode based on PbS nanocrystallites for FYTRONIX solar panel automatic tracking controller

    Science.gov (United States)

    Wageh, S.; Farooq, W. A.; Tataroğlu, A.; Dere, A.; Al-Sehemi, Abdullah G.; Al-Ghamdi, Ahmed A.; Yakuphanoglu, F.

    2017-12-01

    The structural, optical and photoelectrical properties of the fabricated Al/PbS/p-Si/Al photodiode based on PbS nanocrystallites were investigated. The PbS nanocrystallites were characterized by X-ray diffraction (XRD), UV-VIS-NIR, Infrared and Raman spectroscopy. The XRD diffraction peaks show that the prepared PbS nanostructure is in high crystalline state. Various electrical parameters of the prepared photodiode were analyzed from the electrical characteristics based on I-V and C-V-G. The photodiode has a high rectification ratio of 5.85×104 at dark and ±4 V. Moreover, The photocurrent results indicate a strong photovoltaic behavior. The frequency dependence of capacitance and conductance characteristics was attributed to depletion region behavior of the photodiode. The diode was used to control solar panel power automatic tracking controller in dual axis. The fabricated photodiode works as a photosensor to control Solar tracking systems.

  1. Determination Of Rare Earth And Other Elements In YEN-PHU Rare Earth Ore And Other Intermediate Products From The Floatation And Hydrometallurgical Process On Portable XRF Si-PIN Detector

    International Nuclear Information System (INIS)

    Doan Thanh Son; Phung Vu Phong; Nguyen Hanh Phuc

    2014-01-01

    The concentration of rare earths elements such as La, Ce, Pr, Nd, Gd and other elements as Ca, Fe, U, Th in Yen Phu rare earth ore and other intermediate products from the flotation and hydrometallurgical process was determined by using Si-PIN detector fluorescence spectrometry. The precision and accuracy of quantitative analysis was tested by standard reference materials and comparative analysis with different analytical methods. The analytical procedures were set-up and applied for the determination of rare earth and other elements in Yen Phu rare earth ore and other intermediate products from the flotation and hydrometallurgical process with high precision and accuracy. (author)

  2. Detection of charged particles through a photodiode: design and analysis

    International Nuclear Information System (INIS)

    Angoli, A.; Quirino, L.L.; Hernandez, V.M.; Lopez del R, H.; Mireles, F.; Davila, J.I.; Rios, C.; Pinedo, J.L.

    2006-01-01

    This project develops and construct an charge particle detector mean a pin photodiode array, design and analysis using a silicon pin Fotodiodo that generally is used to detect visible light, its good efficiency, size compact and reduced cost specifically allows to its use in the radiation monitoring and alpha particle detection. Here, so much, appears the design of the system of detection like its characterization for alpha particles where one is reported as alpha energy resolution and detection efficiency. The equipment used in the development of work consists of alpha particle a triple source composed of Am-241, Pu-239 and Cm-244 with 5,55 KBq as total activity, Maestro 32 software made by ORTEC, a multi-channel card Triumph from ORTEC and one low activity electroplated uranium sample. (Author)

  3. Measurement of environmental radioactivity with photo-diode and Imaging Plate

    International Nuclear Information System (INIS)

    Mori, C.; Sumi, T.; Gotoh, S.; Saze, T.; Nishizawa, K.

    2000-01-01

    Measurement of environmental radioactivity with photo-diode (PD) and Imaging Plate (IP) was tired. Commercially available Si PIN type PD's generally have depletion layer thickness more than a few hundred micrometer, which is enough for alpha particle measurement. PD's have various features: being usable in normal temperature, high energy resolution and low cost. Radon daughter nuclides positively charged in atmosphere were collected on the PD surface with negative electric potential and measured the pulse height spectra of alpha-particles from the daughter nuclides of Radon in thorium oxide, uranium ore, granite, and concrete. Counting of alpha-particles with IP was tired. Lead plates usually contain Pb-210 (RaD) and emit alpha-particles from Po-210. The alpha-particles from the plate were counted with PD and the plate was exposed to IP. By adjusting the gradation level on the reading out of the latent image, it was possible to count alpha-particle incident image one by one, and the number per 1 cm 2 was compared with the number of count with PD. (author)

  4. Alleviation of Fermi level pinning at metal/n-Ge interface with lattice-matched Si x Ge1‑ x ‑ y Sn y ternary alloy interlayer on Ge

    Science.gov (United States)

    Suzuki, Akihiro; Nakatsuka, Osamu; Sakashita, Mitsuo; Zaima, Shigeaki

    2018-06-01

    The impact of a silicon germanium tin (Si x Ge1‑ x ‑ y Sn y ) ternary alloy interlayer on the Schottky barrier height (SBH) of metal/Ge contacts with various metal work functions has been investigated. Lattice matching at the Si x Ge1‑ x ‑ y Sn y /Ge heterointerface is a key factor for controlling Fermi level pinning (FLP) at the metal/Ge interface. The Si x Ge1‑ x ‑ y Sn y ternary alloy interlayer having a small lattice mismatch with the Ge substrate can alleviate FLP at the metal/Ge interface significantly. A Si0.11Ge0.86Sn0.03 interlayer increases the slope parameter for the work function dependence of the SBH to 0.4. An ohmic behavior with an SBH below 0.15 eV can be obtained with Zr and Al/Si0.11Ge0.86Sn0.03/n-Ge contacts at room temperature.

  5. Response of commercial photodiodes for application in alpha spectrometry

    International Nuclear Information System (INIS)

    Ferreira Filho, Alfredo Lopes

    1998-06-01

    The use of semiconductor detector for ionizing radiations spectrometry and dosimetry has been growing in the last years due to its characteristics of fast response, good efficiency for unit of volume and excellent resolution. Since the working principle of a semiconductor detector is identical to that of the semiconductor junctions of commercial electronic devices, a study was carried out on the PIN-photodiodes response, aiming at set up an alpha spectrometry system of low cost and easy acquisition. The tested components have the following characteristics: active area varying between 13.2 and 25 mm 2 , window of thickness equal or lower than 57 mg/cm 2 , depletion area with depth ranging from 10 to 300 μm and junction capacitance of 16 to 20 pF.Am-241, Cm-244, U-233 and Np-237 alpha sources produced by electrodeposition were used to evaluate the response of the devices as a function of the radiation energy. The results have shown a linear response of the photodiodes with the incident alpha particle energy. The resolution varied from 1.6% to 0.45% and the better detection efficiency found was about 7.2. The low cost of the photodiodes and the excellent results obtained at room temperature make such components very attractive for teaching purposes for environmental monitoring. (author)

  6. A Novel Ring Shaped Photodiode for Reflectance Pulse Oximetry in Wireless Applications

    DEFF Research Database (Denmark)

    Duun, Sune; Haahr, Rasmus Grønbek; Birkelund, Karen

    2007-01-01

    gives optimal gathering of light and thereby enabling lower LED drive currents and lower power consumption. To further optimize the photodiode a two layer SiO2/SiN interference filter is employed yielding 98% transmission at the wavelengths of the LED and damping of other wavelengths. The presented...

  7. Spectroscopic amplifier for pin diode; Amplificador espectroscopico para diodo Pin

    Energy Technology Data Exchange (ETDEWEB)

    Alonso M, M. S.; Hernandez D, V. M.; Vega C, H. R., E-mail: bebe.luna_s@hotmail.com [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico)

    2014-10-15

    The photodiode remains the basic choice for the photo-detection and is widely used in optical communications, medical diagnostics and field of corpuscular radiation. In detecting radiation it has been used for monitoring radon and its progeny and inexpensive spectrometric systems. The development of a spectroscopic amplifier for Pin diode is presented which has the following characteristics: canceler Pole-Zero (P/Z) with a time constant of 8 μs; constant gain of 57, suitable for the acquisition system; 4th integrator Gaussian order to waveform change of exponential input to semi-Gaussian output and finally a stage of baseline restorer which prevents Dc signal contribution to the next stage. The operational amplifier used is the TLE2074 of BiFET technology of Texas Instruments with 10 MHz bandwidth, 25 V/μs of slew rate and a noise floor of 17 nv/(Hz)1/2. The integrated circuit has 4 operational amplifiers and in is contained the total of spectroscopic amplifier that is the goal of electronic design. The results show like the exponential input signal is converted to semi-Gaussian, modifying only the amplitude according to the specifications in the design. The total system is formed by the detector, which is the Pin diode, a sensitive preamplifier to the load, the spectroscopic amplifier that is what is presented and finally a pulse height analyzer (Mca) which is where the spectrum is shown. (Author)

  8. Spectroscopic amplifier for pin diode

    International Nuclear Information System (INIS)

    Alonso M, M. S.; Hernandez D, V. M.; Vega C, H. R.

    2014-10-01

    The photodiode remains the basic choice for the photo-detection and is widely used in optical communications, medical diagnostics and field of corpuscular radiation. In detecting radiation it has been used for monitoring radon and its progeny and inexpensive spectrometric systems. The development of a spectroscopic amplifier for Pin diode is presented which has the following characteristics: canceler Pole-Zero (P/Z) with a time constant of 8 μs; constant gain of 57, suitable for the acquisition system; 4th integrator Gaussian order to waveform change of exponential input to semi-Gaussian output and finally a stage of baseline restorer which prevents Dc signal contribution to the next stage. The operational amplifier used is the TLE2074 of BiFET technology of Texas Instruments with 10 MHz bandwidth, 25 V/μs of slew rate and a noise floor of 17 nv/(Hz)1/2. The integrated circuit has 4 operational amplifiers and in is contained the total of spectroscopic amplifier that is the goal of electronic design. The results show like the exponential input signal is converted to semi-Gaussian, modifying only the amplitude according to the specifications in the design. The total system is formed by the detector, which is the Pin diode, a sensitive preamplifier to the load, the spectroscopic amplifier that is what is presented and finally a pulse height analyzer (Mca) which is where the spectrum is shown. (Author)

  9. Ageing tests of radiation damaged lasers and photodiodes for the CMS experiment at CERN

    CERN Document Server

    Gill, K; Batten, J; Cervelli, G; Grabit, R; Jensen, F; Troska, Jan K; Vasey, F

    2000-01-01

    The effects of thermally accelerated ageing in irradiated and unirradiated 1310 nm InGaAsP edge-emitting lasers and InGaAs p-i-n photodiodes are presented. 40 lasers (20 irradiated) and 30 photodiodes (19 irradiated) were aged for 4000 hours at 80 degrees C. Periodic measurements were made of laser threshold and efficiency, and p-i-n leakage current and photocurrent. There were no sudden failures and there was very little wearout related degradation in either unirradiated or irradiated sample groups. The results suggest that the tested devices have a sufficiently long lifetime to operate for at least 10 years inside the Compact Muon Solenoid experiment despite being exposed to a harsh radiation environment. (19 refs).

  10. Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes

    Science.gov (United States)

    Hayashi, Shohei; Yamashita, Tamotsu; Senzaki, Junji; Miyazato, Masaki; Ryo, Mina; Miyajima, Masaaki; Kato, Tomohisa; Yonezawa, Yoshiyuki; Kojima, Kazutoshi; Okumura, Hajime

    2018-04-01

    The origin of expanded single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes was investigated by the stress-current test. At a stress-current density lower than 25 A cm-2, triangular stacking faults were formed from basal-plane dislocations in the epitaxial layer. At a stress-current density higher than 350 A cm-2, both triangular and long-zone-shaped stacking faults were formed from basal-plane dislocations that converted into threading edge dislocations near the interface between the epitaxial layer and the substrate. In addition, the conversion depth of basal-plane dislocations that expanded into the stacking fault was inside the substrate deeper than the interface. These results indicate that the conversion depth of basal-plane dislocations strongly affects the threshold stress-current density at which the expansion of stacking faults occurs.

  11. Internal fuel pin oxidizer

    International Nuclear Information System (INIS)

    Andrews, M.G.

    1978-01-01

    A nuclear fuel pin has positioned within it material which will decompose to release an oxidizing agent which will react with the cladding of the pin and form a protective oxide film on the internal surface of the cladding

  12. Avalanche photodiodes for ISABELLE detectors

    International Nuclear Information System (INIS)

    Strand, R.C.

    1979-01-01

    At ISABELLE some requirements for detecting bursts of photons are not met by standard photomultiplier tubes. The characteristics of immunity to magnetic fields, small size (few mm), low power consumption (approx. 100 mW), insensitivity to optical overloads, and wide dynamic range (approx. 60 dB) are achieved with difficulty, if at all, with PMTs. These are characteristics of the solid state avalanche photodiode (APD), the preferred detector for light-wave communications. Successful field tests with APD detectors stimulated the design of standard optical-fiber communication systems to replace wire carriers by the early 1980's. In other characteristics, i.e., counting rate, pulse-height resolution, effective quantum efficiency, detection efficiency, and reliability, bare APDs are equivalent to standard PMTs. APDs with currently available amplifiers cannot resolve single photoelectrons but they could provide reasonable detection efficiencies and pulse-height resolution for packets of approx. > 100 photons. Commercially available APDs can cost up to 100 times as much as PMTs per active area, but they are potentially much cheaper. Six topics are discussed: (1) detectors for light-wave communication and detectors for particles, (2) avalanche photodiodes, (3) commercially available APDs, (4) dynamic response of PMTs and bare APDs, (5) photon counting with cold APDs, and (6) conclusions and recommendations

  13. The photodiodes response in beta dosimetry

    International Nuclear Information System (INIS)

    Khoury, Helen; Amaral, Ademir; Hazin, Clovis; Melo, Francisco

    1996-01-01

    The response of the photodiodes BPY-12, BPW-34 and SFH-206 is tested for use as beta dosimeters. The results obtained show a dose-response relationships as well as less than 1% of coefficient of variation for the reproducibility of their responses. The photodiode BPY-12 has presented a better response in comparison with the others

  14. Low Cost silicon photodiodes for alpha spectrometry

    International Nuclear Information System (INIS)

    Khoury, H.; Lopes, A.; Hazin, C.; Lira, C.B.; Silva, E. da

    1998-01-01

    This study was carried out to evaluate the suitability of using commercially available photodiodes for alpha spectrometry, since the principle on which both operate are similar. Photodiodes are low priced compared to the commonly used semiconductor detectors making them potentially useful for research and teaching purposes. Very thin calibrated alpha sources of 2 41 A m, 2 44 C m and 2 35 U , produced at the Metrology Laboratory of IRD/CNEN, were used to test the performance of three photodiodes. The results showed that the responses of the photodiodes were linear with the alpha particle energy and that the energy resolution varied between 0,79% and 0,45%, with an efficiency of 8%. The resolution and efficiency presented by the photodiodes tested are similar to those obtained with other semiconductor detectors, evidencing that they can be used successfully as alpha detectors

  15. Passivation of MBE grown InGaSb/InAs superlattice photodiodes

    Science.gov (United States)

    Hill, Cory J.; Keo, Sam S.; Mumolo, Jason M.; Gunapala, Sarath D.

    2005-01-01

    We have performed wet chemical passivation tests on InGaSb/InAs superlattice photodiode structures grown molecular beam epitaxy. The details of the devices growth and characterization as well as the results of chemical passivation involving RuCl3 and H2SO4 with SiO2 dielectric depositions are presented.

  16. Photodiodes based on fullerene semiconductor

    International Nuclear Information System (INIS)

    Voz, C.; Puigdollers, J.; Cheylan, S.; Fonrodona, M.; Stella, M.; Andreu, J.; Alcubilla, R.

    2007-01-01

    Fullerene thin films have been deposited by thermal evaporation on glass substrates at room temperature. A comprehensive optical characterization was performed, including low-level optical absorption measured by photothermal deflection spectroscopy. The optical absorption spectrum reveals a direct bandgap of 2.3 eV and absorption bands at 2.8 and 3.6 eV, which are related to the creation of charge-transfer excitons. Various photodiodes on indium-tin-oxide coated glass substrates were also fabricated, using different metallic contacts in order to compare their respective electrical characteristics. The influence of a poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) buffer layer between the indium-tin-oxide electrode and the fullerene semiconductor is also demonstrated. These results are discussed in terms of the workfunction for each electrode. Finally, the behaviour of the external quantum efficiency is analyzed for the whole wavelength spectrum

  17. Photodiodes utilization as ionizing radiation detectors

    International Nuclear Information System (INIS)

    Khoury, H.J.; Melo, F.A. de

    1987-01-01

    The response of photodiodes to α and γ radiation is studied, using for α spectrometry measures and for γ radiation dosimetry. Therefore, the response of BPY-12 photodiodes as α particle detector is first studied. The results show that the response is linear with the energy of incidence radiation, one resolution 25Kev for energy of 5,4 MeV from 241 Am. For dosimetric measures, the response of SHF-206 photodiodes, when exposed at γ radiation is studied, and the results show taht the response of this detector is linear with the dose ratio, proving its practicability in γ radiation dosimetry. (C.G.C.) [pt

  18. Scintillation light read-out by thin photodiodes in silicon wells

    CERN Document Server

    Allier, C P; Sarro, P M; Eijk, C W E

    2000-01-01

    Several applications of X-ray and gamma ray imaging detectors, e.g. in medical diagnostics, require millimeter or sub-millimeter spatial resolution and good energy resolution. In order to achieve such features we have proposed a new type of camera, which takes advantage of micromachining technology. It consists of an array of scintillator crystals encapsulated in silicon wells with photodiodes at the bottom. Several parameters of the photodiode need to be optimised: uniformity and efficiency of the light detection, gain, electronic noise and breakdown voltage. In order to evaluate these parameters we have processed 3x3 arrays of 1.8 mm sup 2 , approx 10 mu m thick photodiodes using (1 0 0) wafers etched in a KOH solution. Their optical response at 675 nm wavelength is comparable to that of a 500 mu m thick silicon PIN diode. Their low light detection efficiency is compensated by internal amplification. Several scintillator materials have been positioned in the wells on top of the thin photodiodes, i.e. a 200 ...

  19. MICROCONTROLLER PIN CONFIGURATION TOOL

    OpenAIRE

    Bhaskar Joshi; F. Mohammed Rizwan; Dr. Rajashree Shettar

    2012-01-01

    Configuring the micro controller with large number of pins is tedious. Latest Infine on microcontroller contains more than 200 pins and each pin has classes of signals. Therefore the complexity of the microcontroller is growing. It evolves looking into thousands of pages of user manual. For a user it will take days to configure the microcontroller with the peripherals. We need an automated tool to configure the microcontroller so that the user can configure the microcontroller without having ...

  20. Characterisation of Geiger-mode avalanche photodiodes for medical imaging applications

    Energy Technology Data Exchange (ETDEWEB)

    Britvitch, I. [Swiss Federal Institute of Technology, CH-8092 Zurich (Switzerland)]. E-mail: Ilia.britvitch@psi.ch; Johnson, I. [Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation); Renker, D. [Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Stoykov, A. [Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation); Lorenz, E. [Swiss Federal Institute of Technology, CH-8092 Zurich (Switzerland); Max Planck Institute for Physics, 80805 Munich (Germany)

    2007-02-01

    Recently developed multipixel Geiger-mode avalanche photodiodes (G-APDs) are very promising candidates for the detection of light in medical imaging instruments (e.g. positron emission tomography) as well as in high-energy physics experiments and astrophysical applications. G-APDs are especially well suited for morpho-functional imaging (multimodality PET/CT, SPECT/CT, PET/MRI, SPECT/MRI). G-APDs have many advantages compared to conventional photosensors such as photomultiplier tubes because of their compact size, low-power consumption, high quantum efficiency and insensitivity to magnetic fields. Compared to avalanche photodiodes and PIN diodes, they are advantageous because of their high gain, reduced sensitivity to pick up and the so-called nuclear counter effect and lower noise. We present measurements of the basic G-APD characteristics: photon detection efficiency, gain, inter-cell crosstalk, dynamic range, recovery time and dark count rate.

  1. Characterisation of Geiger-mode avalanche photodiodes for medical imaging applications

    International Nuclear Information System (INIS)

    Britvitch, I.; Johnson, I.; Renker, D.; Stoykov, A.; Lorenz, E.

    2007-01-01

    Recently developed multipixel Geiger-mode avalanche photodiodes (G-APDs) are very promising candidates for the detection of light in medical imaging instruments (e.g. positron emission tomography) as well as in high-energy physics experiments and astrophysical applications. G-APDs are especially well suited for morpho-functional imaging (multimodality PET/CT, SPECT/CT, PET/MRI, SPECT/MRI). G-APDs have many advantages compared to conventional photosensors such as photomultiplier tubes because of their compact size, low-power consumption, high quantum efficiency and insensitivity to magnetic fields. Compared to avalanche photodiodes and PIN diodes, they are advantageous because of their high gain, reduced sensitivity to pick up and the so-called nuclear counter effect and lower noise. We present measurements of the basic G-APD characteristics: photon detection efficiency, gain, inter-cell crosstalk, dynamic range, recovery time and dark count rate

  2. Low-energy X-ray and gamma spectrometry using silicon photodiodes

    International Nuclear Information System (INIS)

    Silva, Iran Jose Oliveira da

    2000-08-01

    The use of semiconductor detectors for radiation detection has increased in recent years due to advantages they present in comparison to other types of detectors. As the working principle of commercially available photodiodes is similar to the semiconductor detector, this study was carried out to evaluate the use of Si photodiodes for low energy x-ray and gamma spectrometry. The photodiodes investigated were SFH-205, SFH-206, BPW-34 and XRA-50 which have the following characteristics: active area of 0,07 cm 2 and 0,25 cm 2 , thickness of the depletion ranging from 100 to 200 μm and junction capacitance of 72 pF. The photodiode was polarized with a reverse bias and connected to a charge sensitive pre-amplifier, followed by a amplifier and multichannel pulse analyzer. Standard radiation source used in this experiment were 241 Am, 109 Cd, 57 Co and 133 Ba. The X-ray fluorescence of lead and silver were also measured through K- and L-lines. All the measurements were made with the photodiodes at room temperature.The results show that the responses of the photodiodes very linear by the x-ray energy and that the energy resolution in FWHM varied between 1.9 keV and 4.4 keV for peaks corresponding to 11.9 keV to 59 keV. The BPW-34 showed the best energy resolution and the lower dark current. The full-energy peak efficiency was also determined and it was observed that the peak efficiency decreases rapidly above 50 keV. The resolution and efficiency are similar to the values obtained with other semiconductor detectors, evidencing that the photodiodes used in that study can be used as a good performance detector for low energy X-ray and gamma spectrometry. (author)

  3. The role of bulk and interface states on performance of a-Si: H p-i-n solar cells using reverse current-voltage technique

    International Nuclear Information System (INIS)

    Mahmood, S A; Kabir, M Z; Murthy, R V R; Dutta, V

    2009-01-01

    The defect state densities in the bulk of the i-layer and at the p/i interface have been studied in hydrogenated amorphous silicon (a-Si : H) solar cells using reverse current-voltage (J-V) measurements. In this work the cells have been soaked with blue and red lights prior to measurements. The voltage-dependent reverse current has been analysed on the basis of thermal generation of the carriers from midgap states in the i-layer and the carrier injection through the p/i interface. Based on the reverse current behaviour, it has been analysed that at lower reverse bias (reverse voltage, V r r ∼ 25 V) the defect states at the p/i interface are contributing to the reverse currents. The applied reverse bias annealing (RBA) treatment on these cells shows more significant annihilation of defect states at the p/i interface as compared with the bulk of the i-layer. An analytical model is developed to explain the observed behaviour. There is good agreement between the theory and the experimental observations. The fitted defect state densities are 9.1 x 10 15 cm -3 and 8 x 10 18 cm -3 in the bulk of the i-layer and near the p/i interface, respectively. These values decrease to 2.5 x 10 15 cm -3 and 6 x 10 17 cm -3 , respectively, in the samples annealed under reverse bias at 2 V.

  4. A photodiode amplifier system for pulse-by-pulse intensity measurement of an x-ray free electron laser.

    Science.gov (United States)

    Kudo, Togo; Tono, Kensuke; Yabashi, Makina; Togashi, Tadashi; Sato, Takahiro; Inubushi, Yuichi; Omodani, Motohiko; Kirihara, Yoichi; Matsushita, Tomohiro; Kobayashi, Kazuo; Yamaga, Mitsuhiro; Uchiyama, Sadayuki; Hatsui, Takaki

    2012-04-01

    We have developed a single-shot intensity-measurement system using a silicon positive-intrinsic-negative (PIN) photodiode for x-ray pulses from an x-ray free electron laser. A wide dynamic range (10(3)-10(11) photons/pulse) and long distance signal transmission (>100 m) were required for this measurement system. For this purpose, we developed charge-sensitive and shaping amplifiers, which can process charge pulses with a wide dynamic range and variable durations (ns-μs) and charge levels (pC-μC). Output signals from the amplifiers were transmitted to a data acquisition system through a long cable in the form of a differential signal. The x-ray pulse intensities were calculated from the peak values of the signals by a waveform fitting procedure. This system can measure 10(3)-10(9) photons/pulse of ~10 keV x-rays by direct irradiation of a silicon PIN photodiode, and from 10(7)-10(11) photons/pulse by detecting the x-rays scattered by a diamond film using the silicon PIN photodiode. This system gives a relative accuracy of ~10(-3) with a proper gain setting of the amplifiers for each measurement. Using this system, we succeeded in detecting weak light at the developmental phase of the light source, as well as intense light during lasing of the x-ray free electron laser. © 2012 American Institute of Physics

  5. PINS Spectrum Identification Guide

    Energy Technology Data Exchange (ETDEWEB)

    A.J. Caffrey

    2012-03-01

    The Portable Isotopic Neutron Spectroscopy—PINS, for short—system identifies the chemicals inside munitions and containers without opening them, a decided safety advantage if the fill chemical is a hazardous substance like a chemical warfare agent or an explosive. The PINS Spectrum Identification Guide is intended as a reference for technical professionals responsible for the interpretation of PINS gamma-ray spectra. The guide is divided into two parts. The three chapters that constitute Part I cover the science and technology of PINS. Neutron activation analysis is the focus of Chapter 1. Chapter 2 explores PINS hardware, software, and related operational issues. Gamma-ray spectral analysis basics are introduced in Chapter 3. The six chapters of Part II cover the identification of PINS spectra in detail. Like the PINS decision tree logic, these chapters are organized by chemical element: phosphorus-based chemicals, chlorine-based chemicals, etc. These descriptions of hazardous, toxic, and/or explosive chemicals conclude with a chapter on the identification of the inert chemicals, e.g. sand, used to fill practice munitions.

  6. Actinide oxide photodiode and nuclear battery

    Energy Technology Data Exchange (ETDEWEB)

    Sykora, Milan; Usov, Igor

    2017-12-05

    Photodiodes and nuclear batteries may utilize actinide oxides, such a uranium oxide. An actinide oxide photodiode may include a first actinide oxide layer and a second actinide oxide layer deposited on the first actinide oxide layer. The first actinide oxide layer may be n-doped or p-doped. The second actinide oxide layer may be p-doped when the first actinide oxide layer is n-doped, and the second actinide oxide layer may be n-doped when the first actinide oxide layer is p-doped. The first actinide oxide layer and the second actinide oxide layer may form a p/n junction therebetween. Photodiodes including actinide oxides are better light absorbers, can be used in thinner films, and are more thermally stable than silicon, germanium, and gallium arsenide.

  7. Fuel pin transfer tool

    International Nuclear Information System (INIS)

    Patenaude, R. S.

    1985-01-01

    A fuel pin transfer tool has a latching device of the collet type attached to a first member movable vertically through a long work stroke enabling a fuel pin in an under water assembly to be engaged and withdrawn therefrom or placed therein and released. The latching device has a collet provided with a plurality of resilient fingers having cam portions normally spaced apart to receive the upper end of a fuel pin between them and a second member, movable vertically through a short stroke relative to the first member is provided with cam portions engageable with those of the fingers and is yieldably and resiliently held in a raised position in which its cam portions engage those of the fingers and force the fingers into their pin-gripping positions. When a predetermined force is applied to the second member, it is so moved that its cam portions are disengaged from the cam portions of the fingers permitting the latter to move into their normal relationship in which a gripped pin is released or another pin received but with their pin-gripping relationship positively re-established and maintained once the force on the tubular member is lessened. Movement of the first member in either direction and movement of the second member into its raised position is attended by forces inadequate to affect the integrity of fuel pin cladding. That force is applied in the preferred embodiment, by a power operated actuator which is within the upper portion of a housing and, in the preferred embodiment, carried by the long stroke member but always in the upper housing portion which is of a material sufficiently translucent to enable the actuator to be observed throughout the work stroke and is sufficiently light in weight to prevent the tool from being top heavy

  8. Photodiode measurements in Nucte-II

    International Nuclear Information System (INIS)

    Machida, M.; Aramaki, E.A.; Takahashi, T.; Ohara, M.; Nogi, N.

    1989-01-01

    Direct measurements of light emission from plasma produced by a field reversed theta-pinch NUCTE-II have been performed by using a set of photodiode detectors. The analysis shows that the plasma light emission can be related to the bremsstrahlung radiation and it is used to identify η=2 rotational instability parameters as rotation direction, angular velocity, and radial and axial displacement of the plasma column. A rough estimate for the temporal behaviour of the electro temperature has also been obtained by using the photodiode signal together with He-Ne laser interferometer and flux excluded signals. (author) [pt

  9. Flux Pinning in Superconductors

    CERN Document Server

    Matsushita, Teruo

    2007-01-01

    The book covers the flux pinning mechanisms and properties and the electromagnetic phenomena caused by the flux pinning common for metallic, high-Tc and MgB2 superconductors. The condensation energy interaction known for normal precipitates or grain boundaries and the kinetic energy interaction proposed for artificial Nb pins in Nb-Ti, etc., are introduced for the pinning mechanism. Summation theories to derive the critical current density are discussed in detail. Irreversible magnetization and AC loss caused by the flux pinning are also discussed. The loss originally stems from the ohmic dissipation of normal electrons in the normal core driven by the electric field induced by the flux motion. The readers will learn why the resultant loss is of hysteresis type in spite of such mechanism. The influence of the flux pinning on the vortex phase diagram in high Tc superconductors is discussed, and the dependencies of the irreversibility field are also described on other quantities such as anisotropy of supercondu...

  10. Accelerated aging tests of radiation damaged lasers and photodiodes for the CMS tracker optical links

    CERN Document Server

    Gill, K; Batten, J; Cervelli, G; Grabit, R; Jensen, F; Troska, Jan K; Vasey, F

    1999-01-01

    The combined effects of radiation damage and accelerated ageing in COTS lasers and p-i-n photodiodes are presented. Large numbers of these devices are employed in future High Energy Physics experiments and it is vital that these devices are confirmed to be sufficiently robust in terms of both radiation resistance and reliability. Forty 1310 nm InGaAsP edge-emitting lasers (20 irradiated) and 30 InGaAs p- i-n photodiodes (19 irradiated) were aged for 4000 hours at 80 degrees C with periodic measurements made of laser threshold and efficiency, in addition to p-i-n leakage current and photocurrent. There were no sudden failures and there was very little wearout- related degradation in either unirradiated or irradiated sample groups. The results suggest that the tested devices have a sufficiently long lifetime to operate for at least 10 years inside the Compact Muon Solenoid experiment despite being exposed to a harsh radiation environment. (13 refs).

  11. Hybrid amplifier for calorimetry with photodiode readout

    Energy Technology Data Exchange (ETDEWEB)

    Sushkov, V V

    1994-12-31

    A hybrid surface mounted amplifier for the photodiode readout of the EM calorimeter has been developed. The main technical characteristics of the design are presented. The design able to math readout constraints for a high luminosity collider experiment is discussed. 10 refs., 2 tabs., 8 figs.

  12. Dose determination on buildup region using photodiodes

    International Nuclear Information System (INIS)

    Khoury, H.J.; Lopes, F.J.; Melo, F. de A.

    1989-01-01

    A clinical dosemeter using photodiode BPW-34 was developed, allowing the determination of dose on buildup region. The measures were made with X-rays beam of linear accelerator and with gamma radiation of cobalt 60. The results were compared with others made in a ionization chamber. (C.G.C.) [pt

  13. Multi-Layer Organic Squaraine-Based Photodiode for Indirect X-Ray Detection

    Science.gov (United States)

    Iacchetti, Antonio; Binda, Maddalena; Natali, Dario; Giussani, Mattia; Beverina, Luca; Fiorini, Carlo; Peloso, Roberta; Sampietro, Marco

    2012-10-01

    The paper presents an organic-based photodiode coupled to a CsI(Tl) scintillator to realize an X-ray detector. A suitable blend of an indolic squaraine derivative and of fullerene derivative has been used for the photodiode, thus allowing external quantum efficiency in excess of 10% at a wavelength of 570 nm, well matching the scintillator output spectrum. Thanks to the additional deposition of a 15 nm thin layer of a suitable low electron affinity polymer, carriers injection from the metal into the organic semiconductor has been suppressed, and dark current density as low as has been obtained, which is comparable to standard Si-based photodiodes. By using a collimated X-ray beam impinging onto the scintillator mounted over the photodiode we have been able to measure current variations in the order of 150 pA on a dark current floor of less than 50 pA when operating the X-ray tube in switching mode, thus proving the feasibility of indirect X-ray detection by means of organic semiconductors.

  14. Determination of the excess noise of avalanche photodiodes integrated in 0.35-μm CMOS technologies

    Science.gov (United States)

    Jukić, Tomislav; Brandl, Paul; Zimmermann, Horst

    2018-04-01

    The excess noise of avalanche photodiodes (APDs) integrated in a high-voltage (HV) CMOS process and in a pin-photodiode CMOS process, both with 0.35-μm structure sizes, is described. A precise excess noise measurement technique is applied using a laser source, a spectrum analyzer, a voltage source, a current meter, a cheap transimpedance amplifier, and a personal computer with a MATLAB program. In addition, usage for on-wafer measurements is demonstrated. The measurement technique is verified with a low excess noise APD as a reference device with known ratio k = 0.01 of the impact ionization coefficients. The k-factor of an APD developed in HV CMOS is determined more accurately than known before. In addition, it is shown that the excess noise of the pin-photodiode CMOS APD depends on the optical power for avalanche gains above 35 and that modulation doping can suppress this power dependence. Modulation doping, however, increases the excess noise.

  15. Sensitive pre-amplifier to load for Pin diodes

    International Nuclear Information System (INIS)

    Jacobo V, R. Y.; Hernandez D, V.; Ramirez J, F. J.

    2013-10-01

    The electronic instrumentation is indispensable for the measurement and characterization of the radiation. By means of this essential characteristics of the radiation are determined, as activity and their energy components. The nuclear instrumentation is based on the technical characteristics of the radiation detectors and the electronic devices associates (amplifiers, ana logical and digital converters, multichannel analyzers, etc.) The radiation detectors are very important instruments in fields as the nuclear physics, medicine, radiological protection, industry and in other fields, since they are the only method to capture the radiation and to be able to quantify it in precise form. To detect radiation diverse detector types are used, as the semiconductor type, inside them are the photodiodes type Pin. In this work the results that were obtained of the design, simulation, construction and tests of a preamplifier that was designed starting from a photodiode type Pin are presented. The system was designed and simulated with a program for electronic circuits, in this were carried out many tests being obtained a compact design and achieving the best necessary characteristics for its optimization. With the results of the simulation phase the electronics phase was built, which was couples to a spectroscopic amplifier and a multichannel analyzer. The total of the system was evaluated analyzing its performance before a triple source of alphas. Of the tests phase we find that the system allows obtaining, in a multichannel analyzer, the pulses height spectrum, with a good resolution and with this was calibrated the multichannel analyzer

  16. PINS-3X Operations

    Energy Technology Data Exchange (ETDEWEB)

    E.H. Seabury

    2013-09-01

    Idaho National Laboratory’s (INL’s) Portable Isotopic Neutron Spectroscopy System (PINS) non-intrusively identifies the chemical fill of munitions and sealed containers. The PINS-3X variant of the system is used to identify explosives and uses a deuterium-tritium (DT) electronic neutron generator (ENG) as the neutron source. Use of the system, including possession and use of the neutron generator and shipment of the system components requires compliance with a number of regulations. This report outlines some of these requirements as well as some of the requirements in using the system outside of INL.

  17. Sensitive pre-amplifier to load for Pin diodes; Pre-amplificador sensible a carga para diodos PIN

    Energy Technology Data Exchange (ETDEWEB)

    Jacobo V, R. Y.; Hernandez D, V. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98060 Zacatecas (Mexico); Ramirez J, F. J., E-mail: yoshimarv@gmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

    2013-10-15

    The electronic instrumentation is indispensable for the measurement and characterization of the radiation. By means of this essential characteristics of the radiation are determined, as activity and their energy components. The nuclear instrumentation is based on the technical characteristics of the radiation detectors and the electronic devices associates (amplifiers, ana logical and digital converters, multichannel analyzers, etc.) The radiation detectors are very important instruments in fields as the nuclear physics, medicine, radiological protection, industry and in other fields, since they are the only method to capture the radiation and to be able to quantify it in precise form. To detect radiation diverse detector types are used, as the semiconductor type, inside them are the photodiodes type Pin. In this work the results that were obtained of the design, simulation, construction and tests of a preamplifier that was designed starting from a photodiode type Pin are presented. The system was designed and simulated with a program for electronic circuits, in this were carried out many tests being obtained a compact design and achieving the best necessary characteristics for its optimization. With the results of the simulation phase the electronics phase was built, which was couples to a spectroscopic amplifier and a multichannel analyzer. The total of the system was evaluated analyzing its performance before a triple source of alphas. Of the tests phase we find that the system allows obtaining, in a multichannel analyzer, the pulses height spectrum, with a good resolution and with this was calibrated the multichannel analyzer.

  18. Investigation of silicon/silicon germanium multiple quantum well layers in silicon avalanche photodiodes

    International Nuclear Information System (INIS)

    Loudon, A.Y.

    2002-01-01

    Silicon single photon avalanche diodes (SPADs) are currently utilised in many single photon counting systems due to their high efficiency, fast response times, low voltage operation and potentially low cost. For fibre based applications however (at wavelengths 1.3 and 1.55μm) and eye-safe wavelength applications (>1.4μm), Si devices are not suitable due to their 1.1μm absorption edge and hence greatly reduced absorption above this wavelength. InGaAs/InP or Ge SPADs absorb at these longer wavelengths, but both require cryogenic cooling for low noise operation and III-V integration with conventional Si circuitry is difficult. Si/SiGe is currently attracting great interest for optoelectronic applications and attempts to combine Si avalanche photodiodes with Si/SiGe multiple quantum well absorbing layers have been successful. Here, an effort to utilise this material system has shown an improvement in photon counting efficiency above 1.1μm of more than 30 times compared to an all-Si control device. In addition to its longer wavelength response, this Si/SiGe device has room temperature operation, low cost fabrication and is compatible with conventional Si circuitry. (author)

  19. Pinning Down versus Density

    OpenAIRE

    Juhász, István; Soukup, Lajos; Szentmiklóssy, Zoltán

    2015-01-01

    The pinning down number $ {pd}(X)$ of a topological space $X$ is the smallest cardinal $\\kappa$ such that for any neighborhood assignment $U:X\\to \\tau_X$ there is a set $A\\in [X]^\\kappa$ with $A\\cap U(x)\

  20. Pin clad strains in Phenix

    International Nuclear Information System (INIS)

    Languille, A.

    1979-07-01

    The Phenix reactor has operated for 4 years in a satisfactory manner. The first 2 sub-assembly loadings contained pins clad in solution treated 316. The principal pin strains are: diametral strain (swelling and irradiation creep), ovality and spiral bending of the pin (interaction of wire and pin cluster and wrapper). A pin cluster irradiated to a dose of 80 dpa F reached a pin diameter strain of 5%. This strain is principally due to swelling (low fission gas pressure). The principal parameters governing the swelling are instantaneous dose, time and temperature for a given type of pin cladding. Other types of steel are or will be irradiated in Phenix. In particular, cold-worked titanium stabilised 316 steel should contribute towards a reduction in the pin clad strains and increase the target burn-up in this reactor. (author)

  1. Pentacene-based photodiode with Schottky junction

    International Nuclear Information System (INIS)

    Lee, Jiyoul; Hwang, D.K.; Park, C.H.; Kim, S.S.; Im, Seongil

    2004-01-01

    We have fabricated a metal/organic semiconductor Schottky photodiode based on Al/pentacene junction. Since the energy band gap of thin solid pentacene was determined to be 1.82 eV, as characterized by direct absorption spectroscopy, we measured spectral photoresponses on our Schottky photodiode in the monochromatic light illumination range of 325-650 nm applying a reverse bias of -2 V. The main features of photo-response spectra were found to shift from those of direct absorption spectra toward higher photon energies. It is because the direct absorption spectra mainly show exciton level peaks rather than the true highest occupied molecular orbital (HOMO)-lowest unoccupied molecular orbital (LUMO) gaps while the photo-response spectra clearly represents the true HOMO-LUMO gap. Our photo-response spectra reveal 1.97 eV as the HOMO-LUMO gap

  2. A radiation detector fabricated from silicon photodiode.

    Science.gov (United States)

    Yamamoto, H; Hatakeyama, S; Norimura, T; Tsuchiya, T

    1984-12-01

    A silicon photodiode is converted to a low energy charged particle radiation detector. The window thickness of the fabricated detector is evaluated to be 50 micrograms/cm2. The area of the depletion region is 13.2 mm2 and the depth of it is estimated to be about 100 microns. The energy resolution (FWHM) is 14.5 ke V for alpha-particles from 241Am and 2.5 ke V for conversion electrons from 109Cd, respectively.

  3. Predictable quantum efficient detector based on n-type silicon photodiodes

    Science.gov (United States)

    Dönsberg, Timo; Manoocheri, Farshid; Sildoja, Meelis; Juntunen, Mikko; Savin, Hele; Tuovinen, Esa; Ronkainen, Hannu; Prunnila, Mika; Merimaa, Mikko; Tang, Chi Kwong; Gran, Jarle; Müller, Ingmar; Werner, Lutz; Rougié, Bernard; Pons, Alicia; Smîd, Marek; Gál, Péter; Lolli, Lapo; Brida, Giorgio; Rastello, Maria Luisa; Ikonen, Erkki

    2017-12-01

    The predictable quantum efficient detector (PQED) consists of two custom-made induced junction photodiodes that are mounted in a wedged trap configuration for the reduction of reflectance losses. Until now, all manufactured PQED photodiodes have been based on a structure where a SiO2 layer is thermally grown on top of p-type silicon substrate. In this paper, we present the design, manufacturing, modelling and characterization of a new type of PQED, where the photodiodes have an Al2O3 layer on top of n-type silicon substrate. Atomic layer deposition is used to deposit the layer to the desired thickness. Two sets of photodiodes with varying oxide thicknesses and substrate doping concentrations were fabricated. In order to predict recombination losses of charge carriers, a 3D model of the photodiode was built into Cogenda Genius semiconductor simulation software. It is important to note that a novel experimental method was developed to obtain values for the 3D model parameters. This makes the prediction of the PQED responsivity a completely autonomous process. Detectors were characterized for temperature dependence of dark current, spatial uniformity of responsivity, reflectance, linearity and absolute responsivity at the wavelengths of 488 nm and 532 nm. For both sets of photodiodes, the modelled and measured responsivities were generally in agreement within the measurement and modelling uncertainties of around 100 parts per million (ppm). There is, however, an indication that the modelled internal quantum deficiency may be underestimated by a similar amount. Moreover, the responsivities of the detectors were spatially uniform within 30 ppm peak-to-peak variation. The results obtained in this research indicate that the n-type induced junction photodiode is a very promising alternative to the existing p-type detectors, and thus give additional credibility to the concept of modelled quantum detector serving as a primary standard. Furthermore, the manufacturing of

  4. Nuclear fuel pin

    International Nuclear Information System (INIS)

    Hartley, Kenneth; Moulding, T.L.J.; Rostron, Norman.

    1979-01-01

    Fuel pin for use in fast breeder nuclear reactors containing fissile and fertile areas of which the fissile and fertile materials do not mix. The fissile material takes the shape of large and small diameter microspheres (the small diameter microspheres can pass through the interstices between the large microspheres). The barrier layers being composed of microspheres with a diameter situated between those of the large and small microspheres ensure that the materials do not mix [fr

  5. Pinning in nonmagnetic borocarbides

    International Nuclear Information System (INIS)

    Zholobenko, A.N.; Mikitik, G.P.; Fil, V.D.; Kim, J.D.; Lee, S.I.

    2005-01-01

    The field dependences of the Labush parameter in nonmagnetic borocarbides are measured by the method which does not require the free flux flow regime. The anticipated critical current densities are estimated. These values are by two orders of magnitude higher than those measured 'directly' in transport (magnetic) experiments. The giant peak-effect in the field dependences of the Labush parameter is revealed in the Y-based borocarbides. Its behavior is well approximated by the collective pinning theory

  6. Investigation of pinning in MgB2 superconductors

    International Nuclear Information System (INIS)

    Mohammad, S.; Reissner, M.; Steiner, W.; Bauer, E.; Giovannini, M.

    2006-01-01

    Full text: The pinning behaviour of bulk MgB 2 superconductors is peculiar in many respects. Pinning seems to be stronger than in classical high T C materials and there seems to be no weak link problem in these compounds, giving hope to produce bulk samples and wires with current densities appropriate for technical applications. But, although many studies concerning the pinning behaviour in this compound appeared in recent years, the results are still contradictory. In the present work we present results of an investigation of the pinning behaviour by magnetic relaxation measurements of three MgB 2 samples: a pure one, a sample with 8 at% Al substitution and a sample with 10 wt% of SiC admixture. A comparison of different analyses methods is given. (author)

  7. Optimization of Packaging for PIN Photodiode Modules for 100Gbit/s Ethernet Applications

    DEFF Research Database (Denmark)

    Jiang, Chenhui; Johansen, Tom Keinicke; Krozer, Viktor

    2007-01-01

    In this paper the packaging of optical components is investigated employing a conductor backed coplanar waveguide (CBCPW). The study is performed using 3D electromagnetic (EM) simulations in a broadband range up to 110GHz. Higher-order resonances are observed in both measurement and simulation...... results. Based on the verified EM simulation setup, the origin of resonances is identified and remedies are suggested in the paper. Several optimization schemes for achieving good transmission characteristics for the planar structure as well as for the coax-CPW transition are proposed such as properly...

  8. Nano-multiplication region avalanche photodiodes and arrays

    Science.gov (United States)

    Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor); Cunningham, Thomas J. (Inventor)

    2011-01-01

    An avalanche photodiode with a nano-scale reach-through structure comprising n-doped and p-doped regions, formed on a silicon island on an insulator, so that the avalanche photodiode may be electrically isolated from other circuitry on other silicon islands on the same silicon chip as the avalanche photodiode. For some embodiments, multiplied holes generated by an avalanche reduces the electric field in the depletion region of the n-doped and p-doped regions to bring about self-quenching of the avalanche photodiode. Other embodiments are described and claimed.

  9. Liquid-helium scintillation detection with germanium photodiodes

    International Nuclear Information System (INIS)

    Luke, P.N.; Haller, E.E.; Steiner, H.M.

    1982-05-01

    Special high-purity germanium photodiodes have been developed for the direct detection of vacuum ultraviolet scintillations in liquid helium. The photodiodes are immersed in the liquid helium, and scintillations are detected through one of the bare sides of the photodiodes. Test results with scintillation photons produced by 5.3-MeV α particles are presented. The use of these photodiodes as liquid-helium scintillation detectors may offer substantial improvements over the alternate detection method requiring the use of wavelength shifters and photomultiplier tubes

  10. Radiation detectors of PIN type for X-rays

    International Nuclear Information System (INIS)

    Ramirez-Jimenez, F.J.

    2003-01-01

    In this laboratory session, tree experiments are proposed: the measurement of X-ray energy spectra from radioactive sources with a high resolution cooled Si-Li detector, with a room temperature PIN diode and the measurement of the response of a PIN diode to the intensity of X-rays of radio-diagnostic units. The spectra obtained with the Si-Li detector help to understand the energy distribution of X-rays and are used as a reference to compare the results obtained with the PIN diode. Measurements in medical X-ray machines are proposed. Low cost, simple electronic instruments and systems are used as tools to make measurements in X-ray units used in radio-diagnostic

  11. Radiation damage effect on avalanche photodiodes

    CERN Document Server

    Baccaro, S; Cavallari, F; Da Ponte, V; Deiters, K; Denes, P; Diemoz, M; Kirn, Th; Lintern, A L; Longo, E; Montecchi, M; Musienko, Y; Pansart, J P; Renker, D; Reucroft, S; Rosi, G; Rusack, R; Ruuska, D; Stephenson, R; Torbet, M J

    1999-01-01

    Avalanche Photodiodes have been chosen as photon sensors for the electromagnetic calorimeter of the CMS experiment at the LHC. These sensors should operate in the 4T magnetic field of the experiment. Because of the high neutron radiation in the detector extensive studies have been done by the CMS collaboration on the APD neutron radiation damage. The characteristics of these devices after irradiation have been analized, with particular attention to the quantum efficiency and the dark current. The recovery of the radiation induced dark current has been studied carefully at room temperature and at slightly lower and higher temperatures. The temperature dependence of the defects decay-time has been evaluated.

  12. Responses of the multi-photodiode readout

    International Nuclear Information System (INIS)

    Tamai, K.

    2000-01-01

    The responses for a signal in various configurations of photodiodes (PDs) and preamplifiers are analyzed by Laplace transformation. The electronic noise in the configuration is derived using the Fourier transformation. The responses and noise are obtained by an analogical extension of the impedance from a single-PD configuration to the multi-PD configuration; however, the noise is not so simple when connected in series. Using the results, we evaluate the energy resolution of the configurations. A series PD connection realizes a better resolution than a parallel connection in the fast shaping

  13. Detection of charged particles through a photodiode: design and analysis; Deteccion de particulas cargadas mediante un fotodiodo: diseno y analisis

    Energy Technology Data Exchange (ETDEWEB)

    Angoli, A.; Quirino, L.L.; Hernandez, V.M.; Lopez del R, H.; Mireles, F.; Davila, J.I.; Rios, C.; Pinedo, J.L. [UAEN, UAZ, 98000 Zacatecas (Mexico)]. e-mail: toono4@hotmail.com

    2006-07-01

    This project develops and construct an charge particle detector mean a pin photodiode array, design and analysis using a silicon pin Fotodiodo that generally is used to detect visible light, its good efficiency, size compact and reduced cost specifically allows to its use in the radiation monitoring and alpha particle detection. Here, so much, appears the design of the system of detection like its characterization for alpha particles where one is reported as alpha energy resolution and detection efficiency. The equipment used in the development of work consists of alpha particle a triple source composed of Am-241, Pu-239 and Cm-244 with 5,55 KBq as total activity, Maestro 32 software made by ORTEC, a multi-channel card Triumph from ORTEC and one low activity electroplated uranium sample. (Author)

  14. Feasibility studies of using thin entrance window photodiodes for clinical electron beam dosimetry

    International Nuclear Information System (INIS)

    Nascimento, Cristina R.; Asfora, Viviane K.; Barros, Vinicius S.M.; Gonçalves, Josemary A.C.; Andrade, Lucas F.R.; Khoury, Helen J.; Bueno, Carmen C.

    2017-01-01

    The response of the commercial XRA-24 PIN photodiode (5.76 mm 2 active area) for clinical electron beam dosimetry covering the range of 8-12 MeV was investigated. Within this energy range, the charge generated in the diode's sensitive volume is linearly dependent on the absorbed dose up to 320 cGy. However, charge sensitivity coefficients evidenced that the dose response of the diode is slightly dependent on the electron beam energy. Indeed, the diode's energy dependence was within 8.5% for 8-12MeV electron beams. On the other hand, it was also observed an excellent repeatability of these results with a variation coefficient (VC) lower than 0.4%, which is within the 1% tolerance limit recommended by the AAPM TG-62. Furthermore, the agreement between the percentage depth dose profiles (PDD) gathered with the diode and the ionization chamber allowed achieving the electron beam quality within 1% of that obtained with the ionization chamber. Based on these results, the photodiode XRA-24 can be a reliable and inexpensive alternative for electron beams dosimetry. (author)

  15. Production of a square geometry Americium standard source for use with photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Costa, Priscila; Geraldo, Bianca; Raele, Marcus P.; Marumo, Júlio T.; Vicente, Roberto; Zahn, Guilherme S.; Genezini, Frederico A., E-mail: priscila3.costa@usp.br, E-mail: fredzini@ipen.br [Instituto de Pesquisas Energéticas e Nucleares (IPEN/CNEN-SP), São Paulo, SP (Brazil)

    2017-07-01

    In the development of a thermal neutron detector using a square photodiode and a thin boron film, a radioactive calibration source with the same geometry was needed. An americium-243 standard source was produced by electrodeposition aiming at the calibration of a PIN-type silicon photodiode with a detection area of 10 x 10 mm{sup 2}. To produce the samples two tests were performed. In the first test, a square stainless steel plate (10 x 10 mm{sup 2}) was fixed on the surface of the conventional plate, which was removed after deposition. To reduce the loss of activity of the source, in the second test nail polish was applied on the silver plate leaving only an area of 10 x 10 mm{sup 2} without varnish coating. Once the electrodeposition process was completed, the activity concentration measurement was performed by alpha particle spectrometry. The first method presented a lower activity when compared to the total activity of Am-243 added initially. For the second method, the total activity was concentrate in the exposed square region (without nail polish). The results showed that it is possible to obtain a square geometry source; furthermore, the surrounding nail polish was not contaminated by {sup 243}Am. The comparison of these two approaches indicated that the second method was more efficient as it was possible to concentrate all the americium activity in the delimited square area. (author)

  16. Feasibility studies of using thin entrance window photodiodes for clinical electron beam dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Nascimento, Cristina R.; Asfora, Viviane K.; Barros, Vinicius S.M.; Gonçalves, Josemary A.C.; Andrade, Lucas F.R.; Khoury, Helen J.; Bueno, Carmen C., E-mail: vsmdbarros@gmail.com, E-mail: vikhoury@gmail.com, E-mail: hjkhoury@gmail.com, E-mail: cristinaramos@smartsat.com.br, E-mail: josemary@ipen.br, E-mail: ccbueno@ipen.br [Universidade Federal de Pernambuco (UFPE), Recife, PE (Brazil); Instituto Federal de Educação, Ciência e Tecnologia de Pernambuco (IFPE), Recife-PE (Brazil). Departamento de Energia Nuclear; Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Santa Casa de Misericórdia de Itabuna, BA (Brazil)

    2017-11-01

    The response of the commercial XRA-24 PIN photodiode (5.76 mm{sup 2} active area) for clinical electron beam dosimetry covering the range of 8-12 MeV was investigated. Within this energy range, the charge generated in the diode's sensitive volume is linearly dependent on the absorbed dose up to 320 cGy. However, charge sensitivity coefficients evidenced that the dose response of the diode is slightly dependent on the electron beam energy. Indeed, the diode's energy dependence was within 8.5% for 8-12MeV electron beams. On the other hand, it was also observed an excellent repeatability of these results with a variation coefficient (VC) lower than 0.4%, which is within the 1% tolerance limit recommended by the AAPM TG-62. Furthermore, the agreement between the percentage depth dose profiles (PDD) gathered with the diode and the ionization chamber allowed achieving the electron beam quality within 1% of that obtained with the ionization chamber. Based on these results, the photodiode XRA-24 can be a reliable and inexpensive alternative for electron beams dosimetry. (author)

  17. ASIC Readout Circuit Architecture for Large Geiger Photodiode Arrays

    Science.gov (United States)

    Vasile, Stefan; Lipson, Jerold

    2012-01-01

    The objective of this work was to develop a new class of readout integrated circuit (ROIC) arrays to be operated with Geiger avalanche photodiode (GPD) arrays, by integrating multiple functions at the pixel level (smart-pixel or active pixel technology) in 250-nm CMOS (complementary metal oxide semiconductor) processes. In order to pack a maximum of functions within a minimum pixel size, the ROIC array is a full, custom application-specific integrated circuit (ASIC) design using a mixed-signal CMOS process with compact primitive layout cells. The ROIC array was processed to allow assembly in bump-bonding technology with photon-counting infrared detector arrays into 3-D imaging cameras (LADAR). The ROIC architecture was designed to work with either common- anode Si GPD arrays or common-cathode InGaAs GPD arrays. The current ROIC pixel design is hardwired prior to processing one of the two GPD array configurations, and it has the provision to allow soft reconfiguration to either array (to be implemented into the next ROIC array generation). The ROIC pixel architecture implements the Geiger avalanche quenching, bias, reset, and time to digital conversion (TDC) functions in full-digital design, and uses time domain over-sampling (vernier) to allow high temporal resolution at low clock rates, increased data yield, and improved utilization of the laser beam.

  18. Transformation of Helicopter PinS Procedures for Airplanes

    Directory of Open Access Journals (Sweden)

    Jakub Kraus

    2013-09-01

    Full Text Available This article deals with the possibility to use existing helicopter Point in Space procedures with minor changes for airplanes. The basis is to find parts of PinS procedures that need to be changed, suggest these changes, and then determine whether the revised procedures could be usable and could bring the benefits for airplane operations.

  19. Pinning, de-pinning and re-pinning of a slowly varying rivulet

    KAUST Repository

    Paterson, C.; Wilson, S.K.; Duffy, B.R.

    2013-01-01

    The solutions for the unidirectional flow of a thin rivulet with prescribed volume flux down an inclined planar substrate are used to describe the locally unidirectional flow of a rivulet with constant width (i.e. pinned contact lines) but slowly varying contact angle as well as the possible pinning and subsequent de-pinning of a rivulet with constant contact angle and the possible de-pinning and subsequent re-pinning of a rivulet with constant width as they flow in the azimuthal direction from the top to the bottom of a large horizontal cylinder. Despite being the same locally, the global behaviour of a rivulet with constant width can be very different from that of a rivulet with constant contact angle. In particular, while a rivulet with constant non-zero contact angle can always run from the top to the bottom of the cylinder, the behaviour of a rivulet with constant width depends on the value of the width. Specifically, while a narrow rivulet can run all the way from the top to the bottom of the cylinder, a wide rivulet can run from the top of the cylinder only to a critical azimuthal angle. The scenario in which the hitherto pinned contact lines of the rivulet de-pin at the critical azimuthal angle and the rivulet runs from the critical azimuthal angle to the bottom of the cylinder with zero contact angle but slowly varying width is discussed. The pinning and de-pinning of a rivulet with constant contact angle, and the corresponding situation involving the de-pinning and re-pinning of a rivulet with constant width at a non-zero contact angle which generalises the de-pinning at zero contact angle discussed earlier, are described. In the latter situation, the mass of fluid on the cylinder is found to be a monotonically increasing function of the constant width. © 2013 Elsevier Masson SAS. All rights reserved.

  20. Pinning, de-pinning and re-pinning of a slowly varying rivulet

    KAUST Repository

    Paterson, C.

    2013-09-01

    The solutions for the unidirectional flow of a thin rivulet with prescribed volume flux down an inclined planar substrate are used to describe the locally unidirectional flow of a rivulet with constant width (i.e. pinned contact lines) but slowly varying contact angle as well as the possible pinning and subsequent de-pinning of a rivulet with constant contact angle and the possible de-pinning and subsequent re-pinning of a rivulet with constant width as they flow in the azimuthal direction from the top to the bottom of a large horizontal cylinder. Despite being the same locally, the global behaviour of a rivulet with constant width can be very different from that of a rivulet with constant contact angle. In particular, while a rivulet with constant non-zero contact angle can always run from the top to the bottom of the cylinder, the behaviour of a rivulet with constant width depends on the value of the width. Specifically, while a narrow rivulet can run all the way from the top to the bottom of the cylinder, a wide rivulet can run from the top of the cylinder only to a critical azimuthal angle. The scenario in which the hitherto pinned contact lines of the rivulet de-pin at the critical azimuthal angle and the rivulet runs from the critical azimuthal angle to the bottom of the cylinder with zero contact angle but slowly varying width is discussed. The pinning and de-pinning of a rivulet with constant contact angle, and the corresponding situation involving the de-pinning and re-pinning of a rivulet with constant width at a non-zero contact angle which generalises the de-pinning at zero contact angle discussed earlier, are described. In the latter situation, the mass of fluid on the cylinder is found to be a monotonically increasing function of the constant width. © 2013 Elsevier Masson SAS. All rights reserved.

  1. Application of avalanche photodiode for soft X-ray pulse-height analyses in the Ht-7 tokamak

    CERN Document Server

    Shi Yue Jiang; Hu Li Qun; Sun Yan Jun; LiuSheng; Ling Bil

    2002-01-01

    An avalanche photodiode (APD) has been used as soft X-ray energy pulse-height analysis system for the measurement of the electron temperature on the HT-7 tokamak. The experimental results obtained with the APD with its inferior energy resolution show a little difference compared to the conventional high energy-resolution Si (Li) detector. Both numerical analysis and experimental results prove that the APD is good enough for application of the electron temperature measurement in tokamaks.

  2. Development of a semiconductor neutron dosimeter with a PIN diode

    International Nuclear Information System (INIS)

    Kim, Seungho; Lee, Namho; Cho, Jaiwan; Youk, Geunuck

    2004-01-01

    When a Si PIN diode is exposed to fast neutrons, it produces displacement in Si lattice structure of the diode. Defects induced from structural dislocation become effective recombination centers for carriers which pass through the base of a PIN diode. Hence, increasing the resistivity of the diode decreases the current for the applied forward voltage. This paper involves the development of a neutron sensor based on the phenomena of the displacement effect damaged by neutron exposure. The neutron effect on the semiconductor was analyzed, and multi PIN diode arrays with various intrinsic layer (I layer) thicknesses and cross sections were fabricated. Under irradiation tests with a neutron beam, the manufactured diodes have good characteristics of linearity in a neutron irradiation experiment and give results that the increase of thickness of I layer and the decrease of the cross-section of the PIN diodes improve the sensitivity. Newly developed PIN diodes with a thicker I layer and various cross sections were retested and showed the best neutron sensitivity in the condition that the I layer thickness was similar to the length of a side of the cross-section. On the basis of two test results, final PIN diodes with a rectangular shape were manufactured and the characteristics for neutron detectors were analyzed through the neutron beam test using the on-line electronic dosimetry system. The developed PIN diode shows a good linearity to absorbed dose in the range of 0 to 1,000cGy (Tissue) and its neutron sensitivity is 13 mV/cGy at a constant current of 5 mA, that is three higher than that of similar commercially developed neutron detectors. Moreover the device shows less dependency on the orientation of the neutron beam and a considerable stability in an annealing test for a long period. (author)

  3. Thick and large area PIN diodes for hard X-ray astronomy

    CERN Document Server

    Ota, N; Sugizaki, M; Kaneda, M; Tamura, T; Ozawa, H; Kamae, T; Makishima, K; Takahashi, T; Tashiro, M; Fukazawa, Y; Kataoka, J; Yamaoka, K; Kubo, S; Tanihata, C; Uchiyama, Y; Matsuzaki, K; Iyomoto, N; Kokubun, M; Nakazawa, T; Kubota, A; Mizuno, T; Matsumoto, Y; Isobe, N; Terada, Y; Sugiho, M; Onishi, T; Kubo, H; Ikeda, H; Nomachi, M; Ohsugi, T; Muramatsu, M; Akahori, H

    1999-01-01

    Thick and large area PIN diodes for the hard X-ray astronomy in the 10-60 keV range are developed. To cover this energy range in a room temperature and in a low background environment, Si PIN junction diodes of 2 mm in thickness with 2.5 cm sup 2 in effective area were developed, and will be used in the bottom of the Phoswich Hard X-ray Detector (HXD), on-board the ASTRO-E satellite. Problems related to a high purity Si and a thick depletion layer during our development and performance of the PIN diodes are presented in detail.

  4. Vortex pinning and creep experiments

    International Nuclear Information System (INIS)

    Kes, P.H.

    1991-01-01

    A brief review of basic flux-pinning and flux-creep ingredients and a selection of experimental results on high-temperature-superconductivity compounds is presented. Emphasis is put on recent results and on those properties which are central to the emerging understanding of the flux-pinning and flux-creep mechanisms of these fascinating materials

  5. Repeat biopsy in patients with initial diagnosis of PIN; La biopsia ripetuta nei pazienti con diagnosi iniziale di PIN

    Energy Technology Data Exchange (ETDEWEB)

    De Matteis, Massimo [Azienda Ospedaliera Policlinico S. Orsola-Malpighi, Bologna (Italy). UO Radiologia Albertoni; Poggi, Cristina; De Martino, Antonietta; Pavlica, Pietro [Azienda Ospedaliera Policlinico S. Orsola-Malpighi, Bologna (Italy). UO Radiologia Palagi, Dipartimento area radiologica; Corti, Barbara [Azienda Ospedaliera Policlinico S. Orsola-Malpighi, Bologna (Italy). UO Anatomia ed istologia patologica, Dipartimento oncologico ed ematologico; Barozzi, Libero [Azienda Ospedaliera Policlinico S. Orsola-Malpighi, Bologna (Italy). UO Radiologia d' urgenza, Dipartimento emergenze ed accettazione

    2005-09-15

    Purpose. Prostatic intra-epithelial neoplasia (PIN) is considered a pre-malignant lesion and the main precursor of invasive prostatic adenocarcinoma. A PIN diagnosis established by prostate needle biopsy poses a difficult clinical management. problem. We retrospectively reviewed our three-year experience in order to identify criteria for referring patients to repeat biopsy. Materials and methods. We reviewed the repeat biopsy records of 72 patients in whom PIN had been detected on initial US-guided needle biopsy of the prostate. All the patients had a minimum of 6 biopsy cores taken, and they all had PSA > 4 ng/ml. Results. Adenocarcinoma was detected in 15 patients out of 50 (30%) with an initial diagnosis of low-grade PIN and in 10 patients out of 22 (45.4%) with high grade PIN, in 7 out of 18 (39%) in whom PSA levels had decreased during the observation interval, in 16 patients out of 46 (35%) in whom the PSA had increased and in 2 patients out of 8 (25%) with stable PSA. Conclusions. Our results seem to confirm that PIN can be considered a precursor of prostatic adenocarcinoma or a histological alteration often associated with it. Patients with low-grade PIN and particularly those with high-grade PIN should be regularly subjected to repeat biopsy at short intervals due to the high frequency of the final diagnosis of carcinoma. No agreement has been reached on the time interval between the first and the second biopsy. The PSA changes during the observation period are not a statistically significant parameter to suggest the repetition of prostatic biopsy. [Italian] Scopo. La neoplasia prostatica intraepiteliale (PIN) e considerata una lesione premaligna ed il precursore principale dell'adenocarcinoma prostatico infiltrante. La diagnosi di PIN ottenuta con l'agobiopsia della prostata rappresenta un difficile problema gestionale clinico. In una valutazione retrospettiva della nostra esperienza di 3 anni si e cercato di individuare i criteri che possano

  6. Diamond photodiodes for x-ray application

    Energy Technology Data Exchange (ETDEWEB)

    Distel, James R [Los Alamos National Laboratory; Smedley, John [BNL; Keister, Jeffrey W [BNL; Muller, Erik [STONY BROOK UNIV.; Jordan - Sweet, Jean [WATSON RESEARCH CENTER; Bohon, Jen [CASE WESTERN RESERVE UNIV.; Dong, Bin [NON LANL

    2009-01-01

    Single crystal high purity CVD diamonds have been metallized and calibrated as photodiodes at the National Synchrotron Light Source (NSLS). Current mode responsivity measurements have been made over a wide range (0.2-28 keV) of photon energies across several beamlines. Linear response has been achieved over ten orders of magnitude of incident flux, along with uniform spatial response. A simple model of responsivity has been used to describe the results, yielding a value of 13.3 {+-} 0.5 eV for the mean pair creation energy. The responsivity vs. photon energy data show a dip for photon energies near the carbon edge (284 eV), indicating incomplete charge collection for carriers created less than one micron from the metallized layer.

  7. Piezo-Phototronic Effect on Selective Electron or Hole Transport through Depletion Region of Vis-NIR Broadband Photodiode.

    Science.gov (United States)

    Zou, Haiyang; Li, Xiaogan; Peng, Wenbo; Wu, Wenzhuo; Yu, Ruomeng; Wu, Changsheng; Ding, Wenbo; Hu, Fei; Liu, Ruiyuan; Zi, Yunlong; Wang, Zhong Lin

    2017-08-01

    Silicon underpins nearly all microelectronics today and will continue to do so for some decades to come. However, for silicon photonics, the indirect band gap of silicon and lack of adjustability severely limit its use in applications such as broadband photodiodes. Here, a high-performance p-Si/n-ZnO broadband photodiode working in a wide wavelength range from visible to near-infrared light with high sensitivity, fast response, and good stability is reported. The absorption of near-infrared wavelength light is significantly enhanced due to the nanostructured/textured top surface. The general performance of the broadband photodiodes can be further improved by the piezo-phototronic effect. The enhancement of responsivity can reach a maximum of 78% to 442 nm illumination, the linearity and saturation limit to 1060 nm light are also significantly increased by applying external strains. The photodiode is illuminated with different wavelength lights to selectively choose the photogenerated charge carriers (either electrons or holes) passing through the depletion region, to investigate the piezo-phototronic effect on electron or hole transport separately for the first time. This is essential for studying the basic principles in order to develop a full understanding about piezotronics and it also enables the development of the better performance of optoelectronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Composite metal oxide semiconductor based photodiodes for solar panel tracking applications

    Energy Technology Data Exchange (ETDEWEB)

    Al-Ghamdi, Ahmed A., E-mail: aghamdi90@hotmail.com [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Dere, A. [Department of Physics, Faculty of Science, Firat University, Elazig (Turkey); Tataroğlu, A. [Department of Physics, Faculty of Science, Gazi University, Ankara (Turkey); Arif, Bilal [Department of Physics, Faculty of Science, Firat University, Elazig (Turkey); Yakuphanoglu, F. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Department of Physics, Faculty of Science, Firat University, Elazig (Turkey); El-Tantawy, Farid [Department of Physics, Faculty of Science, Suez Canal University, Ismailia (Egypt); Farooq, W.A. [Physics and Astronomy Department, College of Science, King Saud University, Riyadh (Saudi Arabia)

    2015-11-25

    The Zn{sub 1−x}Al{sub x}O:Cu{sub 2}O composite films were synthesized by the sol gel method to fabricate photodiodes. The transparent metal oxide Zn{sub 1−x}Al{sub x}O:Cu{sub 2}O thin films were grown on p-Si substrates by spin coating technique. Electrical characterization of the p-Si/AZO:Cu{sub 2}O photodiodes was performed by current–voltage and capacitance–conductance–voltage characteristics under dark and various illumination conditions. The transient photocurrent of the diodes increases with increase in illumination intensity. The photoconducting mechanism of the diodes is controlled by the continuous distribution of trap levels. The photocapacitance and photoconductivity of the diodes are decreased with increasing Cu{sub 2}O content. The series resistance–voltage behavior confirms the presence of the interface states in the interface of the diodes. The photoresponse properties of the diodes indicate that the p-Si/Zn{sub 1−x}Al{sub x}O–Cu{sub 2}O diodes can be used as a photosensor in solar panel tracking applications. - Highlights: • Zn{sub 1−x}Al{sub x}O:Cu{sub 2}O composite films were synthesized by the sol gel method. • p-Si/Zn{sub 1−x}Al{sub x}O–Cu{sub 2}O diodes were fabricated. • p-Si/Zn{sub 1−x}Al{sub x}O–Cu{sub 2}O diodes can be used in the optoelectronic applications.

  9. Photodiode read-out of the ALICE photon spectrometer $PbWO_{4}$ crystals

    CERN Document Server

    Man'ko, V I; Sibiryak, Yu; Volkov, M; Klovning, A; Maeland, O A; Odland, O H; Rongved, R; Skaali, B

    1999-01-01

    Proposal of abstract for LEB99, Snowmass, Colorado, 20-24 September 1999The PHOton Spectrometer of the ALICE experiment is an electromagnetic calorimeter of high granularity consisting of 17280 lead-tungstate (PWO) crystals of dimensions 22x22x180 mm3, read out by large-area PIN-diodes with very low-noise front-end electronics. The crystal assembly is operated at -25C to increase the PWO light yield. A 16.1x17.1 mm2 photodiode, optimized for the PWO emissio spectrum at 400-500 nm, has been developed. The 20x20 mm2 preamplifier PCB is attached to the back side of the diode ceramic frame. The charge sensitive preamplifier is built in discrete logic with two input JFETs for optimum matching with the ~150pF PIN-diode. A prototype shaper has been designed and built in discrete logic. For a detector matrix of 64 units the measured ENCs are between 450-550e at -25C. Beam tests demonstrate that the required energy resolution is reached.Summary:The PHOton Spectrometer of the ALICE experiment is an electromagnetic calo...

  10. Practical synchronization on complex dynamical networks via optimal pinning control

    Science.gov (United States)

    Li, Kezan; Sun, Weigang; Small, Michael; Fu, Xinchu

    2015-07-01

    We consider practical synchronization on complex dynamical networks under linear feedback control designed by optimal control theory. The control goal is to minimize global synchronization error and control strength over a given finite time interval, and synchronization error at terminal time. By utilizing the Pontryagin's minimum principle, and based on a general complex dynamical network, we obtain an optimal system to achieve the control goal. The result is verified by performing some numerical simulations on Star networks, Watts-Strogatz networks, and Barabási-Albert networks. Moreover, by combining optimal control and traditional pinning control, we propose an optimal pinning control strategy which depends on the network's topological structure. Obtained results show that optimal pinning control is very effective for synchronization control in real applications.

  11. In-situ gallium-doping for forming p{sup +} germanium-tin and application in germanium-tin p-i-n photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Wei; Dong, Yuan; D' Costa, Vijay Richard; Yeo, Yee-Chia, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Vajandar, Saumitra; Lim, Sin Leng; Osipowicz, Thomas; Tok, Eng Soon [Department of Physics and Yale-NUS College, National University of Singapore, Singapore 117551 (Singapore)

    2016-04-21

    The in-situ Ga doping technique was used to form heavily p-type doped germanium-tin (Ge{sub 1−x}Sn{sub x}) layers by molecular beam epitaxy, avoiding issues such as Sn precipitation and surface segregation at high annealing temperatures that are associated with the alternative implant and anneal approach. In this way, an electrically active Ga concentration of up to ∼3.2 × 10{sup 20 }cm{sup −3} can be realized for Ge{sub 1−x}Sn{sub x}. The impacts of varying the Ga concentration on the crystalline quality and the mobility of p-type Ge{sub 1−x}Sn{sub x} were investigated. High crystalline quality Ge{sub 0.915}Sn{sub 0.085} can be realized with an active Ga concentration of up to ∼1.2 × 10{sup 20 }cm{sup −3}. More than 98% of the Sn atoms are located on substitutional lattice sites, although the substitutionality of Sn in p-type Ge{sub 1−x}Sn{sub x} decreases with an increasing Ga concentration. When the Ga concentration introduced is higher than 3.2 × 10{sup 20 }cm{sup −3}, excess Ga atoms cannot be substitutionally incorporated, and segregation of Ga and Sn towards the surface during growth is observed. The in-situ Ga-doped Ge{sub 0.915}Sn{sub 0.085} epitaxy was integrated in a Ge{sub 0.915}Sn{sub 0.085}-on-Si p-i-n (PIN) photodiode fabrication process, and well-behaved Ge{sub 0.915}Sn{sub 0.085}/Si PIN junction characteristics were obtained. A large forward-bias current to reverse bias current ratio of 6 × 10{sup 4} and a low reverse current (dark current) of 0.24 μA were achieved at V{sub bias} = −1 V.

  12. Automated fuel pin loading system

    Science.gov (United States)

    Christiansen, D.W.; Brown, W.F.; Steffen, J.M.

    An automated loading system for nuclear reactor fuel elements utilizes a gravity feed conveyor which permits individual fuel pins to roll along a constrained path perpendicular to their respective lengths. The individual lengths of fuel cladding are directed onto movable transports, where they are aligned coaxially with the axes of associated handling equipment at appropriate production stations. Each fuel pin can be be reciprocated axially and/or rotated about its axis as required during handling steps. The fuel pins are inerted as a batch prior to welding of end caps by one of two disclosed welding systems.

  13. Pinning down the axion

    International Nuclear Information System (INIS)

    Dabholkar, A.; Quashnock, J.M.

    1990-01-01

    Davis has argued that, without inflation, the decay of axionic strings is the primary source of axions. This implies a cosmological lower bound on the axion mass of 10 -5 to 10 -3 eV. In order to obtain a sharper bound it is essential to know the spectrum of emitted axions and the detailed motion of a global string strongly coupled to the axionic field. To this end, we obtain self-consistent, renormalized equations that describe the dynamics of a radiating global string interacting with its surrounding axionic field. We describe the numerical formalism for evolving string trajectories using these equations. From the numerical and analytical evidence we argue that, with appropriate renormalization, the motion of an interacting cosmic string loop can be well approximated by the motion of a free Nambu-Goto string. This implies a lower bound for the axion mass of 10 -3 eV. Together with the recent upper bound of 4x10 -4 eV from the supernova SN1987a, this marginally rules out the invisible axion, or at least pins down the axion mass to a very narrow window around 10 -3 eV. This still leaves open the window around 2 eV for hardronic axions, but in that case the axion is no longer a serious dark matter candidate. (orig.)

  14. New silicon photodiodes for detection of the 1064nm wavelength radiation

    Science.gov (United States)

    Wegrzecki, Maciej; Piotrowski, Tadeusz; Puzewicz, Zbigniew; Bar, Jan; Czarnota, Ryszard; Dobrowolski, Rafal; Klimov, Andrii; Kulawik, Jan; Kłos, Helena; Marchewka, Michał; Nieprzecki, Marek; Panas, Andrzej; Seredyński, Bartłomiej; Sierakowski, Andrzej; Słysz, Wojciech; Synkiewicz, Beata; Szmigiel, Dariusz; Zaborowski, Michał

    2016-12-01

    In this paper a concept of a new bulk structure of p+-υ-n+ silicon photodiodes optimized for the detection of fast-changing radiation at the 1064 nm wavelength is presented. The design and technology for two types of quadrant photodiodes, the 8-segment photodiode and the 32-element linear photodiode array that were developed according to the concept are described. Electric and photoelectric parameters of the photodiodes mentioned above are presented.

  15. Low-energy X-ray and gamma spectrometry using silicon photodiodes; Espectrometria de raios X e gama de baixa energia utilizando fotodiodos de silicio

    Energy Technology Data Exchange (ETDEWEB)

    Silva, Iran Jose Oliveira da

    2000-08-01

    The use of semiconductor detectors for radiation detection has increased in recent years due to advantages they present in comparison to other types of detectors. As the working principle of commercially available photodiodes is similar to the semiconductor detector, this study was carried out to evaluate the use of Si photodiodes for low energy x-ray and gamma spectrometry. The photodiodes investigated were SFH-205, SFH-206, BPW-34 and XRA-50 which have the following characteristics: active area of 0,07 cm{sup 2} and 0,25 cm{sup 2}, thickness of the depletion ranging from 100 to 200 {mu}m and junction capacitance of 72 pF. The photodiode was polarized with a reverse bias and connected to a charge sensitive pre-amplifier, followed by a amplifier and multichannel pulse analyzer. Standard radiation source used in this experiment were {sup 241} Am, {sup 109} Cd, {sup 57} Co and {sup 133} Ba. The X-ray fluorescence of lead and silver were also measured through K- and L-lines. All the measurements were made with the photodiodes at room temperature.The results show that the responses of the photodiodes very linear by the x-ray energy and that the energy resolution in FWHM varied between 1.9 keV and 4.4 keV for peaks corresponding to 11.9 keV to 59 keV. The BPW-34 showed the best energy resolution and the lower dark current. The full-energy peak efficiency was also determined and it was observed that the peak efficiency decreases rapidly above 50 keV. The resolution and efficiency are similar to the values obtained with other semiconductor detectors, evidencing that the photodiodes used in that study can be used as a good performance detector for low energy X-ray and gamma spectrometry. (author)

  16. Large area avalanche MRS-photodiodes for nuclear spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ermalitski, F A; Zalesski, V B

    1996-12-31

    Problems of application of avalanche photodiodes (APD) in readout systems of nuclear spectrometers are considered. APD`s with a large sensitive area of a diameter 1-5 mm and a high multiplication coefficient 200-1000 are created. MPS-photodiodes provide for the energy resolution 80% at temperature 231 K for detecting gamma-quanta with energy 662 keV. 4 refs.

  17. Pinning Mechanisms in YBCO Tapes

    CERN Document Server

    Spera, Marcello; Ballarino, Amalia

    2015-01-01

    In this thesis work, a study on flux pinning mechanisms of commercial YBCO tapes is presented. This study has been performed via critical current characterization using transport (via direct I-V curves) and magnetization (via a Vibrating Sample Magnetometer) measurements. The latter ones turned out to be better concerning the comprehension of the pinning landscape of the provided samples, as a wider range of magnetic fields and temperatures is available for those measurements in the setup I used. The comparison of the experimental data with existing theoretical models allowed me to draw a picture of the pinning mechanisms underlying in each sample, and they turned out to be quite different one another. Moreover, for high-performance research tapes, another interesting feature has been found: the counterplay between the self-field critical current and the in-field one. Very well engineered artificial pinning structures limit the self-field critical current density due to the hi...

  18. Silicide Schottky Contacts to Silicon: Screened Pinning at Defect Levels

    Energy Technology Data Exchange (ETDEWEB)

    Drummond, T.J.

    1999-03-11

    Silicide Schottky contacts can be as large as 0.955 eV (E{sub v} + 0.165 eV) on n-type silicon and as large as 1.05 eV (E{sub c} {minus} 0.07 eV) on p-type silicon. Current models of Schottky barrier formation do not provide a satisfactory explanation of occurrence of this wide variation. A model for understanding Schottky contacts via screened pinning at defect levels is presented. In the present paper it is shown that most transition metal silicides are pinned approximately 0.48 eV above the valence band by interstitial Si clusters. Rare earth disilicides pin close to the divacancy acceptor level 0.41 eV below the conduction band edge while high work function silicides of Ir and Pt pin close to the divacancy donor level 0.21 eV above the valence band edge. Selection of a particular defect pinning level depends strongly on the relative positions of the silicide work function and the defect energy level on an absolute energy scale.

  19. Calpastatin is regulated by protein never in mitosis gene A interacting-1 (PIN1) in endothelial cells

    International Nuclear Information System (INIS)

    Liu, Tongzheng; Schneider, Ryan A.; Hoyt, Dale G.

    2011-01-01

    Highlights: ► Depletion of PIN1 increases inhibitory effect of calpastatin against calpain in endothelial cells. ► PIN1 associates with calpastatin. ► PIN1, but not mutants, reduces the inhibitory activity of calpastatin in vitro. ► Depletion of calpastatin shows that it is required for PIN1 depletion to reduce calpain activity. -- Abstract: The peptidyl-proline isomerase, protein never in mitosis gene A interacting-1 (PIN1) binds and isomerizes proteins phosphorylated on serine/threonine before a proline. It was previously found that depletion of PIN1 greatly increased induction of cyclooxygenase-2 and inducible nitric oxide synthase by lowering calpain activity in murine aortic endothelial cells (MAEC). Here we investigated the effect of PIN1 on the endogenous inhibitor of heterodimeric μ- and m-calpains, calpastatin. MAEC were transduced with small hairpin (sh) RNA to knock down PIN1 (KD) or an inactive Control shRNA. Cells were also treated with non-targeted double stranded small inhibitory RNA (siRNA) or siRNA designed to deplete calpastatin. Despite reducing calpain activity, PIN1 KD did not significantly affect the expression of μ- and m-calpains, or calpastatin, compared to Control shRNA. Instead, depletion of PIN1 increased the inhibitory activity of calpastatin. Calpastatin co-immunoprecipitated with endogenous PIN1 and was pulled down with glutathione-S-transferase (GST)–PIN1 fusion protein. Adding GST–PIN1 to KD cell extracts lacking PIN1 reduced calpastatin inhibitory activity. Substrate binding and catalytic domain mutants of PIN1 failed to do so. These results suggest that protein interaction and the proline isomerase functions of PIN1 are required for it to inhibit calpastatin. Furthermore, depletion of calpastatin raised calpain activity and reduced calpain inhibitory activity to similar levels in KD and Control MAEC, indicating that calpastatin is required for PIN1 depletion to lower calpain activity. Thus, PIN1 apparently restrains

  20. Calpastatin is regulated by protein never in mitosis gene A interacting-1 (PIN1) in endothelial cells

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Tongzheng, E-mail: liu.tongzheng@mayo.edu [Division of Oncology Research, Department of Oncology, Mayo Clinic, Rochester, MN 55905 (United States); Schneider, Ryan A., E-mail: schneiderr@findlay.edu [College of Pharmacy, The University of Findlay, Findlay, OH 45840 (United States); Hoyt, Dale G., E-mail: hoyt.27@osu.edu [The Dorothy M. Davis Heart and Lung Research Institute, and the Division of Pharmacology, College of Pharmacy, The Ohio State University, 500 West Twelfth Avenue, Columbus, OH 43210 (United States)

    2011-10-28

    Highlights: Black-Right-Pointing-Pointer Depletion of PIN1 increases inhibitory effect of calpastatin against calpain in endothelial cells. Black-Right-Pointing-Pointer PIN1 associates with calpastatin. Black-Right-Pointing-Pointer PIN1, but not mutants, reduces the inhibitory activity of calpastatin in vitro. Black-Right-Pointing-Pointer Depletion of calpastatin shows that it is required for PIN1 depletion to reduce calpain activity. -- Abstract: The peptidyl-proline isomerase, protein never in mitosis gene A interacting-1 (PIN1) binds and isomerizes proteins phosphorylated on serine/threonine before a proline. It was previously found that depletion of PIN1 greatly increased induction of cyclooxygenase-2 and inducible nitric oxide synthase by lowering calpain activity in murine aortic endothelial cells (MAEC). Here we investigated the effect of PIN1 on the endogenous inhibitor of heterodimeric {mu}- and m-calpains, calpastatin. MAEC were transduced with small hairpin (sh) RNA to knock down PIN1 (KD) or an inactive Control shRNA. Cells were also treated with non-targeted double stranded small inhibitory RNA (siRNA) or siRNA designed to deplete calpastatin. Despite reducing calpain activity, PIN1 KD did not significantly affect the expression of {mu}- and m-calpains, or calpastatin, compared to Control shRNA. Instead, depletion of PIN1 increased the inhibitory activity of calpastatin. Calpastatin co-immunoprecipitated with endogenous PIN1 and was pulled down with glutathione-S-transferase (GST)-PIN1 fusion protein. Adding GST-PIN1 to KD cell extracts lacking PIN1 reduced calpastatin inhibitory activity. Substrate binding and catalytic domain mutants of PIN1 failed to do so. These results suggest that protein interaction and the proline isomerase functions of PIN1 are required for it to inhibit calpastatin. Furthermore, depletion of calpastatin raised calpain activity and reduced calpain inhibitory activity to similar levels in KD and Control MAEC, indicating that

  1. Geiger mode avalanche photodiodes for microarray systems

    Science.gov (United States)

    Phelan, Don; Jackson, Carl; Redfern, R. Michael; Morrison, Alan P.; Mathewson, Alan

    2002-06-01

    New Geiger Mode Avalanche Photodiodes (GM-APD) have been designed and characterized specifically for use in microarray systems. Critical parameters such as excess reverse bias voltage, hold-off time and optimum operating temperature have been experimentally determined for these photon-counting devices. The photon detection probability, dark count rate and afterpulsing probability have been measured under different operating conditions. An active- quench circuit (AQC) is presented for operating these GM- APDs. This circuit is relatively simple, robust and has such benefits as reducing average power dissipation and afterpulsing. Arrays of these GM-APDs have already been designed and together with AQCs open up the possibility of having a solid-state microarray detector that enables parallel analysis on a single chip. Another advantage of these GM-APDs over current technology is their low voltage CMOS compatibility which could allow for the fabrication of an AQC on the same device. Small are detectors have already been employed in the time-resolved detection of fluorescence from labeled proteins. It is envisaged that operating these new GM-APDs with this active-quench circuit will have numerous applications for the detection of fluorescence in microarray systems.

  2. Automated system for loading nuclear fuel pins

    International Nuclear Information System (INIS)

    Marshall, J.L.

    1983-10-01

    A completely automatic and remotely controlled fuel pin fabrication system is being designed by the Westinghouse Hanford Company. The Pin Operations System will produce fuel pins for the Fast Flux Test Facility (FFTF) and the Clinch River Breeder Reactor Plant (CRBRP). The system will assemble fuel pin components into cladding tubes in a controlled environment. After fuel loading, the pins are filled with helium, the tag gas capsules are inserted, and the top end cap welded. Following welding, the pins are surveyed to assure they are free of contamination and then the pins are helium leak tested

  3. Etat des lieux et perspectives du pin sylvestre en Wallonie

    OpenAIRE

    Thibaut, K.; Colson, Vincent; Lecomte, H.; Claessens, Hugues

    2007-01-01

    Si le pin sylvestre fut l’un des pionniers de la reforestation de nos contrées, l’engouement qu’il suscita au XIXe siècle semble aujourd’hui bien retombé. À travers l’analyse de la ressource disponible et d’une rapide enquête auprès des cantonnements de la DNF, l’article propose un état des lieux de cette essence et discute de ses perspectives dans le contexte actuel.

  4. Enhanced pinning in superconducting thin films with graded pinning landscapes

    Science.gov (United States)

    Motta, M.; Colauto, F.; Ortiz, W. A.; Fritzsche, J.; Cuppens, J.; Gillijns, W.; Moshchalkov, V. V.; Johansen, T. H.; Sanchez, A.; Silhanek, A. V.

    2013-05-01

    A graded distribution of antidots in superconducting a-Mo79Ge21 thin films has been investigated by magnetization and magneto-optical imaging measurements. The pinning landscape has maximum density at the sample border, decreasing linearly towards the center. Its overall performance is noticeably superior than that for a sample with uniformly distributed antidots: For high temperatures and low fields, the critical current is enhanced, whereas the region of thermomagnetic instabilities in the field-temperature diagram is significantly suppressed. These findings confirm the relevance of graded landscapes on the enhancement of pinning efficiency, as recently predicted by Misko and Nori [Phys. Rev. B 85, 184506 (2012)].

  5. Stress relaxation of thermally bowed fuel pins

    International Nuclear Information System (INIS)

    Crossland, I.G.; Speight, M.V.

    1983-01-01

    The presence of cross-pin temperature gradients in nuclear reactor fuel pins produces differential thermal expansion which, in turn, causes the fuel pin to bow elastically. If the pin is restrained in any way, such thermal bowing causes the pin to be stressed. At high temperatures these stresses can relax by creep and it is shown here that this causes the pin to suffer an additional permanent deflection, so that when the cross-pin temperature difference is removed the pin remains bowed. By representing the cylindrical pin by an equivalent I-beam, the present work examines this effect when it takes place by secondary creep. Two restraint systems are considered, and it is demonstrated that the rate of relaxation depends mainly upon the creep equation, and hence the temperature, and also the magnitude of the initial stresses. (author)

  6. Defect pin behaviour in the DFR

    International Nuclear Information System (INIS)

    Sloss, W.M.; Bagley, K.Q.; Edmonds, E.; Potter, P.E.

    1979-01-01

    A program of defective fuel pin irradiations has been carried out in the DFR. This program employed fuel pins which had failed during previous irradiations (natural defects) and pins in which simulated failures (artificial defects) had been induced prior to irradiation or during an intermediate examination stage at moderate or substantial burnups. The artificial defects simulated longitudinal ruptures and were normally located at positions near the top, middle and bottom of the pin where clad temperatures were 450, 540 and 630 0 C respectively. The fuel was mixed U-Pu oxide, and fuel form, stoichiometry, clad type, pin diameter, linear rating, and burnup were among the variables examined. The defect pin tests were normally carried out in single pin or trefoil type vehicles. After irradiation all the pins were subjected to the normal nondestructive examination procedures and the visual, radiographic, gamma-scanning, and dimensional change results are presented. Several pins were destructively examined and the metallographic data are discussed

  7. Development of a gamma dosimeter using a photodiode

    International Nuclear Information System (INIS)

    Melo, F.A. de.

    1988-05-01

    In the last years, the application of semiconductor detectors in radiation spectroscopy and dosimetry has increased. Silicon diodes have found utility in radiation dosimetry principally because a diode produces a current approximately 18000 times larger than of an ionization chamber of an equal sensitive volume. As the characteristics of the semiconductor detectors are the same as the common photodiode, a gamma dosimeter using this type of electronic component was developed. The photodiode SFH206 operating in photovoltaic mode was used. An electrometric unit was constructed to measure the current generated in this detector. The results obtained showed: the response of the photodiode was linear with the dose and that variation of 40 degrees in the incidence angle of the radiation caused a variation of 5% in the dose determination; the response reproducibility of the photodiode was studied, and the results showed that the variation coefficient is smaller than 0,02%; the small dimension of the silicon photodiode recommend its use as a gamma dosimeter for medical applications. (author). 19 refs, 32 figs, 1 tab

  8. Rotation of a piston pin in the small connecting rod eye during engine operation; Drehung eines Kolbenbolzens im kleinen Pleuelauge waehrend des Motorbetriebs

    Energy Technology Data Exchange (ETDEWEB)

    Wachtmeister, Georg; Hubert, Andreas [Technische Univ. Muenchen (DE). Lehrstuhl fuer Verbrennungskraftmaschinen (LVK)

    2008-12-15

    A constant increase of powerful combustion engines has lead to higher loads on the crankshaft drive and piston pin. To ensure a robust design the effective forces and movements at the piston pin have to be known. At the Technische Universitaet Muenchen, Chair of Internal Combustion Engines, a research project looked into the piston pins movement during engine operation. The main goal was to determine the rotary movements of the piston pin by measurement at a 4-l gas SI engine as a function of the engine load and speed and to clarify the mechanisms that cause the rotary movement of the piston pin especially in the small connecting rod eye. (orig.)

  9. MONJU fuel pin performance analysis

    International Nuclear Information System (INIS)

    Kitagawa, H.; Yamanaka, T.; Hayashi, H.

    1979-01-01

    Monju fuel pin has almost the same properties as other LMFBR fuel pins, i.e. Phenix, PFR, CRBR, but would be irradiated under severe conditions: maximum linear heat rate of 381 watt/cm, hot spot cladding temperature of 675 deg C, peak burnup of 131,000 MWd/t, peak fluence (E greater than 0.1 MeV) of 2.3 10 23 n/cm 2 . In order to understand in-core performance of Monju fuel pin, its thermal and mechanical behaviour was predicted using the fast running performance code SIMPLE. The code takes into account pellet-cladding interaction due to thermal expansion and swelling, gap conductance, structural changes of fuel pellets, fission product gas release with burnup and temperature increase, swelling and creep of fuel pellets, corrosion of cladding due to sodium flow and chemical attack by fission products, and cumulative damage of the cladding due to thermal creep

  10. Neutron radiography of fuel pins

    International Nuclear Information System (INIS)

    Jackson, C.N. Jr.; Powers, H.G.; Burgess, C.A.

    1975-01-01

    Neutron radiography performed with a reactor source has been shown to be a superior radiographic method for the examination of unirradiated mixed oxide fuel pins at the Hanford Engineering Development Laboratory. Approximately 1,700 fuel pins were contained in a sample that demonstrated the capability of the method for detecting laminations, structural flaws, fissile density variation, hydrogenous inclusions and voids in assembled fuel pins. The nature, extent, and importance of the detected conditions are substantiated by gamma autoradiography and by destructive analysis employing alpha autoradiography, electron microprobe and visual inspection. Also, a series of radiographs illustrate the response of neutron radiography as compared to low voltage and high voltage x-ray and gamma source Iridium 192 radiography. (U.S.)

  11. Updated design for a low-noise, wideband transimpedance photodiode amplifier

    International Nuclear Information System (INIS)

    Paul, S. F.; Marsala, R.

    2006-01-01

    The high-speed rotation diagnostic developed for Columbia's HBT-EP tokamak requires a high quantum efficiency, very low drift detector/amplifier combination. An updated version of the circuit developed originally for the beam emission spectroscopy experiment on TFTR is being used. A low dark current (2 nA at 15 V bias), low input source capacitance (2 pF) FFD-040 N-type Si photodiode is operated in photoconductive mode. It has a quantum efficiency of 40% at the 468.6 nm (He II line that is being observed). A low-noise field-effect transistor (InterFET IFN152 with e Na =1.2 nV/√Hz) is used to reduce the noise in the transimpedance preamplifier (A250 AMPTEK op-amp) and a very high speed (unity-gain bandwidth=200 MHz) voltage feedback amplifier (LM7171) is used to restore the frequency response up to 100 kHz. This type of detector/amplifier is photon-noise limited at this bandwidth for incident light with a power of >∼2 nW. The circuit has been optimized using SIMETRIX 4.0 SPICE software and a prototype circuit has been tested successfully. Though photomultipliers and avalanche photodiodes can detect much lower light levels, for light levels >2 nW and a 10 kHz bandwidth, this detector/amplifier combination is more sensitive because of the absence of excess (internally generated) noise

  12. Mode of failure of LMFBR fuel pins

    International Nuclear Information System (INIS)

    Washburn, D.F.

    1975-01-01

    The objectives of the irradiation test described were to evaluate mixed-oxide fuel performance and to confirm the design adequacy of the FFTF fuel pins. After attainment of the initial objectives the irradiation of several of the original fuel pins was continued until a cladding breach occurred. The consequences of a cladding breach were evaluated by reconstituting the original 37-pin subassembly into two 19-pin subassemblies after a burnup at 50,000 MWd/MTM (5.2 a/o). The original pins were supplemented with fresh pins as necessary. Irradiation of the subassemblies was continued until a cladding breach occurred. Results are presented and discussed

  13. Discussion about photodiode architectures for space applications

    Science.gov (United States)

    Gravrand, O.; Destefanis, G.; Cervera, C.; Zanatta, J.-P.; Baier, N.; Ferron, A.; Boulade, O.

    2017-11-01

    configuration is a low flux application but the need for speed distinguishes it from other low flux applications as it usually requires a different ROIC architecture and a photodiode optimized for high response speed.

  14. Improved pinning regime by energetic ions using reduction of pinning potential

    Energy Technology Data Exchange (ETDEWEB)

    Weinstein, Roy; Gandini, Alberto; Sawh, Ravi-Persad; Parks, Drew; Mayes, Bill

    2003-05-15

    When ion damage is used to create pinning centers, full columnar pinning centers provide the largest pinning potential, U{sub pin}, but not the greatest J{sub c} or pinned field, B{sub pin}. Some of the characteristics of columnar defects which limit J{sub c} and B{sub pin} are discussed, including reduction of percolation path, and the need for a larger number of columns of damage, for pinning, than are usually estimated. It is concluded that columnar pinning centers are limited to B{sub pin}<4 T, and also severely reduce J{sub c}. Evidence is reviewed that aligned damage, or broken-columnar pinning centers, described herein, can provide orders of magnitude higher J{sub c}, and higher pinned field, despite providing lower U{sub pin}. A pinning center morphology is discussed which utilizes multiple-in-line-damage (MILD). For, e.g., present day large grain HTS J{sub c}, obtainable by MILD pinning, is estimated to be of the order of 10{sup 6} A/cm{sup 2} at 77 K, even when crystal plane alignment and weak links are not improved. Pinned field is increased by over an order of magnitude. An experiment is proposed to confirm these observations, and to directly compare MILD to columnar pinning centers. It will also determine the optimum MILD structure. Other measurements of interest, made possible by the same data set, are described.

  15. Multicenter Study of Pin Site Infections and Skin Complications Following Pinning of Pediatric Supracondylar Humerus Fractures.

    Science.gov (United States)

    Combs, Kristen; Frick, Steven; Kiebzak, Gary

    2016-12-03

    Pediatric supracondylar humerus fractures are the most common elbow fractures in pediatric patients. Surgical fixation using pins is the primary treatment for displaced fractures. Pin site infections may follow supracondylar humerus fracture fixation; the previously reported incidence rate in the literature is 2.34%, but there is significant variability in reported incidence rates of pin site infection. This study aims to define the incidence rate and determine pre-, peri-, and postoperative factors that may contribute to pin site infection following operative reduction, pinning, and casting. A retrospective chart analysis was performed over a one-year period on patients that developed pin site infection. A cast care form was added to Nemours' electronic medical records (EMR) system (Epic Systems Corp., Verona, WI) to identify pin site infections for retrospective review. The cast care form noted any inflamed or infected pins. Patients with inflamed or infected pin sites underwent a detailed chart review. Preoperative antibiotic use, number and size of pins used, method of postoperative immobilization, pin dressings, whether postoperative immobilization was changed prior to pin removal, and length of time pins were in place was recorded. A total of 369 patients underwent operative reduction, pinning, and casting. Three patients developed a pin site infection. The pin site infection incidence rate was 3/369=0.81%. Descriptive statistics were reported for the three patients that developed pin site infections and three patients that developed pin site complications. Pin site infection development is low. Factors that may contribute to the development of pin site infection include preoperative antibiotic use, length of time pins are left in, and changing the cast prior to pin removal.

  16. Fuel pin bowing in CAGR

    International Nuclear Information System (INIS)

    Crossland, I.G.

    1982-01-01

    Some of the more important mechanisms by which pin bowing can occur in Advanced Gas Cooled Reactors are examined. These include creep relaxation of the stresses which occur when thermal bowing is restrained and asymmetric axial clad creep. The clad temperature changes which accompany such bowing are also investigated and the theoretical results briefly compared with the empirical behaviour. (author)

  17. Suspension scheme for fuel pin

    International Nuclear Information System (INIS)

    Butts, C.E.; Gray, H.C.

    1975-01-01

    A description is presented of a nuclear fuel pin suspension arrangement comprising, in combination, a rod; a first beam member connected to said rod at one end; a plurality of parallel-spaced slidable fuel support plates attached to said first beam member, the longitudinal axis of first beam member being perpendicular to the longitudinal axis of each of said fuel support plates, a first coupling means disposed along the length of the first beam member for permitting slidable fuel support plates parallel movement with respect to the longitudinal axis of said first beam member, a second coupling means located at one end of each of slidable fuel plates for slidably engaging first coupling means of first beam member, a second beam member connected to the other end of each of parallel-spaced slidable fuel support plates and providing an extension, second beam member being provided with a third coupling means disposed along the length of second beam member at one end thereof; and a plurality of fuel pins provided with a fourth coupling means located at one end of each fuel pin for slidably engaging third coupling means of second beam member to permit each fuel pin parallel movement with respect to the longitudinal axis of second beam member. (U.S.)

  18. Characterization of new hexagonal large area Geiger Avalanche Photodiodes

    International Nuclear Information System (INIS)

    Boccone, V.; Aguilar, J.A.; Della Volpe, D.; Christov, A.; Montaruli, T.; Rameez, M.; Basili, A.

    2013-06-01

    Photomultipliers (PMTs) are the standard detector for construction of the current generation of imaging Atmospheric Cherenkov Telescopes (IACTs). Despite impressive improvements in QE and reliability in the last years, these devices suffer from the limitation of being unable to operate in the partially illuminated sky (during full or partial moon periods) as the excess light leads to a significant increase in the rate of ageing of the devices themselves and consequently limit the life of the camera. A viable alternative is the large area Geiger-mode avalanche photodiodes (G-APDs also known as Silicon Photomultipliers or SiPMs) that are commercially available from different producers in various types and dimensions. The sufficiency of the maturity of this technology for application to Cherenkov Astronomy has already been demonstrated by the FACT telescope. One of the camera designs under study for the 4 m Davies Cotton Telescope foresees the utilization of a large area G-APDs coupled to non imaging light concentrators. In collaboration with Hamamatsu and deriving from their current technology, we have designed a new hexagonal shaped large area G-APD HEX S12516 which when coupled to a Winston cone of 24 degrees cutting angle allows for a pixel angular resolution of 0.25 degrees for a f/D 1.4 telescope with a diameter of 4 m. The device, available in 2 different cell size configurations (50 μm and 100 μm), is divided into 4 different channels powered in common cathode mode. A temperature sensor was included for a better temperature evaluation in the characterization phase. The first 3 prototypes were fully characterized and the results are compared to the larger area devices commercially available such as the S10985-050C (2x2 array of 3x3 mm 2 G-APDs). The photo-detection efficiency is measured applying the Poisson statistics method using pulsed LED at 7 different wavelengths from 355 to 670 nm and for different bias over-voltages (V ov ). Optical crosstalk and

  19. Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes

    Science.gov (United States)

    Dyakonova, N.; Karandashev, S. A.; Levinshtein, M. E.; Matveev, B. A.; Remennyi, M. A.

    2018-06-01

    We report the first experimental study of low-frequency noise in p-InAsSbP/n-InAs infrared photodiodes. For forward bias, experiments have been carried out at 300 and 77 K, in the photovoltaic regime the measurements have been done at 300 K. At room temperature the current noise spectral density, SI , exhibits the ∼1/f frequency dependence. For low currents, I ≤ I 0 ∼ 4 × 10‑5 A, S I is proportional to I 2, at higher currents this dependence changes to S I ∼ I. At 77 K the noise spectral density is significantly higher than at 300 K, and Lorentzian contributions to noise are observed. The current dependences of spectral noise density can be approximately described as S I ∼ I 1.5 and show particularities suggesting the contribution of defects.

  20. Integrated thin film Si fluorescence sensor coupled with a GaN microLED for microfluidic point-of-care testing

    Science.gov (United States)

    Robbins, Hannah; Sumitomo, Keiko; Tsujimura, Noriyuki; Kamei, Toshihiro

    2018-02-01

    An integrated fluorescence sensor consisting of a SiO2/Ta2O5 multilayer optical interference filter and hydrogenated amorphous silicon (a-Si:H) pin photodiode was coupled with a GaN microLED to construct a compact fluorescence detection module for point-of-care microfluidic biochemical analysis. The combination of the small size of the GaN microLED and asymmetric microlens resulted in a focal spot diameter of the excitation light of approximately 200 µm. The limit of detection of the sensor was as high as 36 nM for fluorescein solution flowing in a 100 µm deep microfluidic channel because of the lack of directionality of the LED light. Nevertheless, we used the GaN microLED coupled with the a-Si:H fluorescence sensor to successfully detect fluorescence from a streptavidin R-phycoerythrin conjugate that bound to biotinylated antibody-coated microbeads trapped by the barrier in the microfluidic channel.

  1. Silicon PIN diode based electron-gamma coincidence detector system for Noble Gases monitoring.

    Science.gov (United States)

    Khrustalev, K; Popov, V Yu; Popov, Yu S

    2017-08-01

    We present a new second generation SiPIN based electron-photon coincidence detector system developed by Lares Ltd. for use in the Noble Gas measurement systems of the International Monitoring System and the On-site Inspection verification regimes of the Comprehensive Nuclear-Test Ban Treaty (CTBT). The SiPIN provide superior energy resolution for electrons. Our work describes the improvements made in the second generation detector cells and the potential use of such detector systems for other applications such as In-Situ Kr-85 measurements for non-proliferation purposes. Copyright © 2017 Elsevier Ltd. All rights reserved.

  2. Radiation damage of multipixel Geiger-mode avalanche photodiodes irradiated with low-energy γ's and electrons

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, Y.; Yun, Y. B. [Yonsei University, Seoul (Korea, Republic of); Ha, J. M. [Yonsei University, Seoul (Korea, Republic of); Electronics and Telecommunications Research Institute, Daejeon (Korea, Republic of); Lee, J. S.; Yoon, Y. S. [Electronics and Telecommunications Research Institute, Daejeon (Korea, Republic of); Eun, J. W. [Namseoul University, Cheonan (Korea, Republic of)

    2012-05-15

    A few types of multipipixel Geiger-mode avalanche photodiodes (also referred to as silicon photomultipliers SiPMs) are irradiated with 1 to 2.5 MeV γ's and electrons. We characterize radiation damage effects appearing in the reverse bias current, the dark current and count rate, the pixel gain, and the photon detection efficiency of the devices. An interesting observation on the dark current and count rate is made and linked to the specific damage caused by the irradiation.

  3. Prototype for the measurement of parameters in the Mammography Unity using photodiodes

    International Nuclear Information System (INIS)

    Mercado H, I.; Ramirez J, F.J.; Tovar M, V.; Becerril V, A.

    1999-01-01

    It has been developed a prototype which makes possible to measure the kilo voltage applied to the X-ray tube, the exposure time of the radiation beam and the yield expressed in kerma in air K a (mGy/m As) o a mammography unit. The instrument consists of a radiation detector, an acquisition circuit, a stage of analogical processing of the signal connected to an analogic-digital converter and a display system of the results. The detection section is composed by a pair of photodiodes PIN type in which to do make the measurement of kilo voltage one of them is covered by an aluminium filter (Al) and the other one by a molybdenum filter (Mo). The measurements were done in a mammography unit which possess a generator of high frequency, with a molybdenum anode, a window 8 mm Beryllium (Be) and an additional filtration of 30 μ m Mo. The measurements obtained were compared with commercial instruments finding maximum variations of 2 % of value obtained. This prototype has been developed with the idea to obtain in a future a commercial instrument, for be used mainly in the hospitable institutions as an auxiliary tool in the Quality assurance programs in radiodiagnostic. (Author)

  4. Novel vertical silicon photodiodes based on salicided polysilicon trenched contacts

    International Nuclear Information System (INIS)

    Kaminski, Yelena; Shauly, Eitan; Paz, Yaron

    2015-01-01

    The classical concept of silicon photodiodes comprises of a planar design characterized by heavily doped emitters. Such geometry has low collection efficiency of the photons absorbed close to the surface. An alternative, promising, approach is to use a vertical design. Nevertheless, realization of such design is technologically challenged, hence hardly explored. Herein, a novel type of silicon photodiodes, based on salicided polysilicon trenched contacts, is presented. These contacts can be prepared up to 10 μm in depth, without showing any leakage current associated with the increase in the contact area. Consequently, the trenched photodiodes revealed better performance than no-trench photodiodes. A simple two dimensional model was developed, allowing to estimate the conditions under which a vertical design has the potential to have better performance than that of a planar design. At large, the deeper the trench is, the better is the vertical design relative to the planar (up to 10 μm for silicon). The vertical design is more advantageous for materials characterized by short diffusion lengths of the carriers. Salicided polysilicon trenched contacts open new opportunities for the design of solar cells and image sensors. For example, these contacts may passivate high contact area buried contacts, by virtue of the conformity of polysilicon interlayer, thus lowering the via resistance induced recombination enhancement effect

  5. Novel vertical silicon photodiodes based on salicided polysilicon trenched contacts

    Energy Technology Data Exchange (ETDEWEB)

    Kaminski, Yelena [Department of Chemical Engineering, Technion, Haifa (Israel); TowerJazz Ltd. Migdal Haemek (Israel); Shauly, Eitan [TowerJazz Ltd. Migdal Haemek (Israel); Paz, Yaron, E-mail: paz@tx.technion.ac.il [Department of Chemical Engineering, Technion, Haifa (Israel)

    2015-12-07

    The classical concept of silicon photodiodes comprises of a planar design characterized by heavily doped emitters. Such geometry has low collection efficiency of the photons absorbed close to the surface. An alternative, promising, approach is to use a vertical design. Nevertheless, realization of such design is technologically challenged, hence hardly explored. Herein, a novel type of silicon photodiodes, based on salicided polysilicon trenched contacts, is presented. These contacts can be prepared up to 10 μm in depth, without showing any leakage current associated with the increase in the contact area. Consequently, the trenched photodiodes revealed better performance than no-trench photodiodes. A simple two dimensional model was developed, allowing to estimate the conditions under which a vertical design has the potential to have better performance than that of a planar design. At large, the deeper the trench is, the better is the vertical design relative to the planar (up to 10 μm for silicon). The vertical design is more advantageous for materials characterized by short diffusion lengths of the carriers. Salicided polysilicon trenched contacts open new opportunities for the design of solar cells and image sensors. For example, these contacts may passivate high contact area buried contacts, by virtue of the conformity of polysilicon interlayer, thus lowering the via resistance induced recombination enhancement effect.

  6. Visible light photodiodes and photovoltages from detonation nanodiamonds

    Czech Academy of Sciences Publication Activity Database

    Rezek, Bohuslav; Stehlík, Štěpán; Kromka, Alexander; Arnault, J.-C.; Weis, M.; Jakabovič, J.

    2016-01-01

    Roč. 1, č. 14 (2016), s. 971-975 ISSN 2059-8521 R&D Projects: GA ČR GA15-01809S Institutional support: RVO:68378271 Keywords : nanodiamond * photodiode Subject RIV: BM - Solid Matter Physics ; Magnetism

  7. Optical fibers and avalanche photodiodes for scintillator counters

    International Nuclear Information System (INIS)

    Borenstein, S.R.; Palmer, R.B.; Strand, R.C.

    1980-01-01

    Fine hodoscopes can be made of new scintillating optical fibers and one half inch end-on PMT's. An avalanche photodiode with small size and immunity to magnetic fields remains as a tempting new device to be proven as a photodetector for the fibers

  8. Leituras semióticas de Pinóquio

    Directory of Open Access Journals (Sweden)

    Rafael Giardini Lenzi

    2013-12-01

    Full Text Available Esta resenha faz breve exposição do conteúdo de Pinocchio: nuove avventure tra segni e linguaggi, organizado por Paolo Fabbri e Isabella Pezzini, que apresenta dez artigos e um tautograma que tratam do tema Pinóquio, alternando entre elementos do texto original, elementos presentes em variações do romance e abordagens sobre a tradução ou a variação em si, sob a óptica da semiótica discursiva. A perseverança e forte proliferação do tema Pinóquio, originalmente ou sob outros pontos de vista trazidos pelos meios de comunicação, estabelece o texto como uma fábula da atualidade que sempre atraiu o olhar científico.

  9. Influence of Irradiation Time on Structural, Morphological Properties of ZnO-NRs Films Deposited by MW-CBD and Their Photodiode Applications

    Directory of Open Access Journals (Sweden)

    Saliha Ilican

    2017-01-01

    Full Text Available Microwave-assisted chemical bath deposition (MW-CBD was used to deposit zinc oxide nanorods (ZnO-NRs films by using different microwave irradiation time. The films exhibit a good crystallinity having a hexagonal wurtzite phase formation. Although the dominant preferred orientation was not observed for the ZnO-5 and ZnO-10, ZnO-8 showed (002 preferred orientation. The emission scanning electron microscope (FESEM showed almost randomly oriented hexagonal nanorods on the surface. A slight decrease in the length of the observed hexagonal nanorods due to the increase in the irradiation time was observed, changing from 550 nm to 300 nm. The p-Si/n-ZnO-NRs heterojunction photodiodes were fabricated. The current-voltage characteristics of these photodiodes were investigated under dark and different illumination intensity. An increase in the reverse current with increasing illumination intensity confirmed that the fabricated photodiodes exhibited a photoconducting behavior. In addition, the barrier height and series resistance values of the photodiodes were determined from capacitance-voltage measurements.

  10. Pinning synchronization of a mobile agent network

    International Nuclear Information System (INIS)

    Wang, Lei; Sun, You-xian

    2009-01-01

    We investigate the problem of controlling a group of mobile agents in a plane in order to move them towards a desired orbit via pinning control, in which each agent is associated with a chaotic oscillator coupled with those of neighboring agents, and the pinning strategy is to have the common linear feedback acting on a small fraction of agents by random selection. We explore the effects of the pinning probability, feedback gains and agent density in the pinning synchronization of a mobile agent network under a fast-switching constraint, and perform numerical simulations for validation. In particular, we show that there exists a critical pinning density for network synchronization with an unbounded region: above the threshold, the dynamical network can be controlled by pinning; below it, anarchy prevails. And for the network with a single bounded synchronization region, pinning control has little effect as regards enhancing network synchronizability

  11. Testing of the KRI-developed Silicon PIN Radioxenon Detector

    International Nuclear Information System (INIS)

    Foxe, Michael P.; McIntyre, Justin I.

    2015-01-01

    Radioxenon detectors are used for the verification of the Comprehensive Nuclear-Test-Ban Treaty (CTBT) in a network of detectors throughout the world called the International Monitoring System (IMS). The Comprehensive Nuclear-Test-Ban Treaty Organization (CTBTO) Provisional Technical Secretariat (PTS) has tasked Pacific Northwest National Laboratory (PNNL) with testing a V.G. Khlopin Radium Institute (KRI) and Lares Ltd-developed Silicon PIN detector for radioxenon detection. PNNL measured radioxenon with the silicon PIN detector and determined its potential compared to current plastic scintillator beta cells. While the PNNL tested Si detector experienced noise issues, a second detector was tested in Russia at Lares Ltd, which did not exhibit the noise issues. Without the noise issues, the Si detector produces much better energy resolution and isomer peak separation than a conventional plastic scintillator cell used in the SAUNA systems in the IMS. Under the assumption of 1 cm 3 of Xe in laboratory-like conditions, 24-hr count time (12-hr count time for the SAUNA), with the respective shielding the minimum detectable concentrations for the Si detector tested by Lares Ltd (and a conventional SAUNA system) were calculated to be: 131m Xe - 0.12 mBq/m 3 (0.12 mBq/m 3 ); 133 Xe - 0.18 mBq/m 3 (0.21 mBq/m 3 ); 133m Xe - 0.07 mBq/m 3 (0.15 mBq/m 3 ); 135 Xe - 0.45 mBq/m 3 (0.67 mBq/m 3 ). Detection limits, which are one of the important factors in choosing the best detection technique for radioxenon in field conditions, are significantly better than for SAUNA-like detection systems for 131m Xe and 133m Xe, but similar for 133 Xe and 135 Xe. Another important factor is the amount of ''memory effect'' or carry over signal from one radioxenon measurement to the subsequent sample. The memory effect is reduced by a factor of 10 in the Si PIN detector compared to the current plastic scintillator cells. There is potential for further reduction with the

  12. Modeling and simulation of 4H-SiC field effect transistor

    Science.gov (United States)

    Pedryc, A.; Martychowiec, A.; Kociubiński, A.

    2017-08-01

    This paper presents the technological issue of silicon carbide MOSFET design. Through the use of simulations of silicon carbide transistor, the influence of the different the technological parameters are described and discussed. MOSFET transistor was performed in Silvaco TCAD using technology elaborated at Lublin University of Technology. The most important parameters related to ion implantation, which was used in p-i-n photodiode technology. The electrical simulations were performed, transfer and output characteristics for different values of technological parameters were generated - influence of gate oxide thickness on threshold voltage and influence of channel length modulation were checked. The results of simulations as well as transfer and output characteristics allowed to select optimal parameters between expected device working and available technology - gate oxide thickness and transistor channel length were established. This work was in fact carried out to increase our understanding of the device characteristics so as to allow the design of new SiC circuits which could meet the stressful requirements of ultraviolet detector systems.

  13. Pinning Control Strategy of Multicommunity Structure Networks

    Directory of Open Access Journals (Sweden)

    Chao Ding

    2017-01-01

    Full Text Available In order to investigate the effects of community structure on synchronization, a pinning control strategy is researched in a class of complex networks with community structure in this paper. A feedback control law is designed based on the network community structure information. The stability condition is given and proved by using Lyapunov stability theory. Our research shows that as to community structure networks, there being a threshold hT≈5, when coupling strength bellows this threshold, the stronger coupling strength corresponds to higher synchronizability; vice versa, the stronger coupling strength brings lower synchronizability. In addition the synchronizability of overlapping and nonoverlapping community structure networks was simulated and analyzed; while the nodes were controlled randomly and intensively, the results show that intensive control strategy is better than the random one. The network will reach synchronization easily when the node with largest betweenness was controlled. Furthermore, four difference networks’ synchronizability, such as Barabási-Albert network, Watts-Strogatz network, Erdös-Rényi network, and community structure network, are simulated; the research shows that the community structure network is more easily synchronized under the same control strength.

  14. Radiated power measurement with AXUV photodiodes in EAST tokamak

    International Nuclear Information System (INIS)

    Duan Yanmin; Hu Liqun; Du Wei; Mao Songtao; Chen Kaiyun; Zhang Jizhong

    2013-01-01

    The fast bolometer diagnostic system for absolute radiated power measurement on EAST tokamak is introduced, which is based on the absolute extreme ultraviolet (AXUV) photodiodes. The relative calibration of AXUV detectors is carried out using X-ray tube and standard luminance source in order to evaluate the sensitivity degradation caused by cumulative radiation damage during experiments. The calibration result shows a 23% sensitivity decrease in the X-ray range for the detector suffering ∼27000 discharges, but the sensitivity for the visible light changes little. The radiated power measured by AXUV photodiodes is compared with that measured by resistive bolometer. The total radiated power in main plasma deduced from AXUV detector is lower a factor of 1∼4 than that deduced from resistive bolometer. Some typical measurement results are also shown in this article. (author)

  15. A 75 GHz silicon metal-semiconductor-metal Schottky photodiode

    International Nuclear Information System (INIS)

    Alexandrou, S.; Wang, C.; Hsiang, T.Y.; Liu, M.Y.; Chou, S.Y.

    1993-01-01

    The ultrafast characteristics of crystalline-silicon metal-semiconductor-metal (MSM) photodiodes with 300 nm finger width and spacing were measured with a subpicosecond electro-optic sampling system. Electrical responses with full width at half maximum as short as 5.5 and 11 ps, at corresponding 3 dB bandwidths of 75 and 38 GHz, were generated by violet and red photons, respectively. The difference is attributed to the photon penetration depth which is much larger than the diode finger spacing at red, but smaller at violet. Light-intensity dependence was also examined at different wavelengths, indicating a linear relation and a higher sensitivity in the violet. These results not only demonstrated the fastest silicon photodetector reported to date, but also pinpointed the dominant speed-limiting factor of silicon MSM photodiodes. A configuration is suggested to improve the speed of these detectors at long wavelengths

  16. Unicortical self-drilling external fixator pins reduce thermal effects during pin insertion.

    Science.gov (United States)

    Greinwald, Markus; Varady, Patrick A; Augat, Peter

    2017-12-14

    External fixation is associated with the risk of pin loosening and pin infection potentially associated to thermal bone necrosis during pin insertion. This study aims to investigate if the use of external fixator systems with unicortical pins reduces the heat production during pin insertion compared to fixators with bicortical pins. Porcine bone specimens were employed to determine bone temperatures during insertion of fixator pins. Two thermographic cameras were used for a simultaneous temperature measurement on the bone surface (top view) and a bone cross-section (front view). Self-drilling unicortical and bicortical pins were inserted at different rotational speeds: (30-600) rpm. Maximum and mean temperatures of the emerging bone debris, bone surface and bone cross-section were analyzed. Maximum temperatures of up to 77 ± 26 °C were measured during pin insertion in the emerging debris and up to 42 ± 2 °C on the bone surface. Temperatures of the emerging debris increased with increasing rotational speeds. Bicortical pin insertion generated significantly higher temperatures at low insertion speed (30 rpm) CONCLUSION: The insertion of external fixator pins can generate a considerable amount of heat around the pins, primarily emerging from bone debris and at higher insertion speeds. Our findings suggest that unicortical, self-drilling fixator pins have a decreased risk for thermal damage, both to the surrounding tissue and to the bone itself.

  17. Pin Wire Coating Trip Report

    International Nuclear Information System (INIS)

    Spellman, G P

    2004-01-01

    A meeting to discuss the current pin wire coating problems was held at the Reynolds plant in Los Angeles on 2MAR04. The attendance list for Reynolds personnel is attached. there was an initial presentation which gave a brief history and the current status of pin wire coating at Reynolds. There was a presentation by Lori Primus on the requirements and issues for the coating. There was a presentation by Jim Smith of LANL on the chemistry and to some extent process development done to date. There was a long session covering what steps should be taken in the short term and, to a lesser extent, the long term. The coating currently being used is a blend of two polymers, polyethersulfone and polyparabanic acid (PPA) and some TiO2 filler. This system was accepted and put into production when the pin wire coating was outsourced to another company in 1974. When that company no longer was interested, the wire coating was brought in-house to Reynolds. At that time polyparabanic acid was actually a commercial product available from Exxon under the trade name Tradlon. However, it appears that the material used at Reynolds was synthesized locally. Also, it appears that a single large batch was synthesized in that time period and used up to 1997 when the supply ran out. The reason for the inclusion of TiO2 is not known although it does act as a rheological thickener. However, a more controlled thickening can be obtained with materials such as fumed silica. This material would have less likelihood of causing point imperfections in the coatings. Also, the mixing technique being used for all stages of the process is a relatively low shear ball mill process and the author recommends a high shear process such as a three roll paint mill, at least for the final mixing. Since solvent is added to the powder at Reynolds, it may be that they need to have the paint mill there

  18. Transient survivability of LMR oxide fuel pins

    International Nuclear Information System (INIS)

    Weber, E.T.; Pitner, A.L.; Bard, F.E.; Culley, G.E.; Hunter, C.W.

    1986-01-01

    Fuel pin integrity during transient events must be assessed for both the core design and safety analysis phases of a reactor project. A significant increase in the experience related to limits of integrity for oxide fuel pins in transient overpower events has been realized from testing of fuel pins irradiated in FFTF and PFR. Fourteen FFTF irradiated fuel pins were tested in TREAT, representing a range of burnups, overpower ramp rates and maximum overpower conditions. Results of these tests along with similar testing in the PFR/TREAT program, provide a demonstration of significant safety margins for oxide fuel pins. Useful information applied in analytical extrapolation of fuel pin test data have been developed from laboratory transient tests on irradiated fuel cladding (FCTT) and on unirradiated fuel pellet deformation. These refinements in oxide fuel transient performance are being applied in assessment of transient capabilities of long lifetime fuel designs using ferritic cladding

  19. Dark current spectroscopy of space and nuclear environment induced displacement damage defects in pinned photodiode based CMOS image sensors

    International Nuclear Information System (INIS)

    Belloir, Jean-Marc

    2016-01-01

    CMOS image sensors are envisioned for an increasing number of high-end scientific imaging applications such as space imaging or nuclear experiments. Indeed, the performance of high-end CMOS image sensors has dramatically increased in the past years thanks to the unceasing improvements of microelectronics, and these image sensors have substantial advantages over CCDs which make them great candidates to replace CCDs in future space missions. However, in space and nuclear environments, CMOS image sensors must face harsh radiation which can rapidly degrade their electro-optical performances. In particular, the protons, electrons and ions travelling in space or the fusion neutrons from nuclear experiments can displace silicon atoms in the pixels and break the crystalline structure. These displacement damage effects lead to the formation of stable defects and to the introduction of states in the forbidden bandgap of silicon, which can allow the thermal generation of electron-hole pairs. Consequently, non ionizing radiation leads to a permanent increase of the dark current of the pixels and thus a decrease of the image sensor sensitivity and dynamic range. The aim of the present work is to extend the understanding of the effect of displacement damage on the dark current increase of CMOS image sensors. In particular, this work focuses on the shape of the dark current distribution depending on the particle type, energy and fluence but also on the image sensor physical parameters. Thanks to the many conditions tested, an empirical model for the prediction of the dark current distribution induced by displacement damage in nuclear or space environments is experimentally validated and physically justified. Another central part of this work consists in using the dark current spectroscopy technique for the first time on irradiated CMOS image sensors to detect and characterize radiation-induced silicon bulk defects. Many types of defects are detected and two of them are identified, proving the applicability of this technique to study the nature of silicon bulk defects using image sensors. In summary, this work advances the understanding of the nature of the radiation-induced defects responsible for the dark current increase in space or nuclear environments. It also leads the way to the design of more advanced dark current prediction models, or to the development of mitigation strategies in order to prevent the formation of the responsible defects or to allow their removal. (author) [fr

  20. Electronic response of a photodiode coupled to a boron thin film

    Energy Technology Data Exchange (ETDEWEB)

    Costa, Priscila; Costa, Fabio E.; Raele, Marcus P.; Zahn, Guilherme S.; Geraldo, Bianca; Vieira Junior, Nilson D.; Samad, Ricardo E.; Genezini, Frederico A., E-mail: priscila3.costa@usp.br, E-mail: fredzini@ipen.br [Instituto de Pesquisas Energéticas e Nucleares (IPEN/CNEN-SP), São Paulo, SP (Brazil)

    2017-07-01

    A portable thermal neutron detector is proposed in this work using a silicon photodiode coupled to a boron thin film. The aim of this work was to verify the effect in the electronic response of this specific photodiode due to boron deposition, since the direct deposition of boron in the semiconductor surface could affect its electrical properties specifically the p-type layer that affects directly the depletion region of the semiconductor reducing the neutron detector efficiency count. Three boron depositions with different thickness were performed in the photodiode (S3590-09) surface by pulsed laser deposition and the photodiode was characterized, before and after the deposition process, using a radioactive americium source. Energy spectra were used to verify the electronic response of the photodiode, due to the fact that it is possible to relate it to the photopeak pulse height and resolution. Spectra from the photodiode without and with boron film deposition were compared and a standard photodiode (S3590-04) that had the electronic signal conserved was used as reference to the pulse height for electronics adjustments. The photopeak energy resolution for the photodiode without boron layer was 10.26%. For the photodiode with boron deposition at different thicknesses, the resolution was: 7.64 % (0.14 μm), 7.30 % (0.44 μm) and 6.80 % (0.63 μm). From these results it is possible to evaluate that there was not any degradation in the silicon photodiode. (author)

  1. Cesium migration in LMFBR fuel pins

    International Nuclear Information System (INIS)

    Karnesky, R.A.; Jost, J.W.; Stone, I.Z.

    1978-10-01

    The factors affecting the axial migration of cesium in mixed oxide fuel pins and the effects of cesium migration on fuel pin performance are examined. The development and application of a correlated model which will predict the occurrence of cesium migration in a mixed oxide (75 w/o UO 2 + 25 w/o PuO 2 ) fuel pins over a wide range of fabrication and irradiation conditions are described

  2. Novel micropixel avalanche photodiodes (MAPD) with super high pixel density

    International Nuclear Information System (INIS)

    Anfimov, N.; Chirikov-Zorin, I.; Dovlatov, A.; Gavrishchuk, O.; Guskov, A.; Khovanskiy, N.; Krumshtein, Z.; Leitner, R.; Meshcheryakov, G.; Nagaytsev, A.; Olchevski, A.; Rezinko, T.; Sadovskiy, A.; Sadygov, Z.; Savin, I.; Tchalyshev, V.; Tyapkin, I.; Yarygin, G.; Zerrouk, F.

    2011-01-01

    In many detectors based on scintillators the photomultiplier tubes (PMTs) are used as photodetectors. At present photodiodes are finding wide application. Solid state photodetectors allow operation in strong magnetic fields that are often present in applications, e.g. some calorimeters operating near magnets, combined PET and MRT, etc. The photon detection efficiency (PDE) of photodiodes may reach values a few times higher than that of PMTs. Also, they are rigid, compact and have relatively low operating voltage. In the last few years Micropixel Avalanche PhotoDiodes (MAPD) have been developed and started to be used. The MAPD combines a lot of advantages of semiconductor photodetectors and has a high gain, which is close to that of the PMT. Yet, they have some disadvantages, and one of them is a limited dynamic range that corresponds to a total number of pixels. The novel deep microwell MAPD with high pixel density produced by the Zecotek Company partially avoids this disadvantage. In this paper characteristics of these photodetectors are presented in comparison with the PMT characteristics. The results refer to measurements of the gain, PDE, cross-talks, photon counting and applications: beam test results of two different 'Shashlyk' EM calorimeters for COMPASS (CERN) and NICA-MPD (JINR) with the MAPD readout and a possibility of using the MAPD in PET.

  3. Novel micropixel avalanche photodiodes (MAPD) with superhigh pixel density

    International Nuclear Information System (INIS)

    Anfimov, N.; Chirikov-Zorin, I.; Dovlatov, A.

    2010-01-01

    In many detectors based on scintillators the photomultiplier tubes (PMTs) are used as photodetectors. At present photodiodes are finding wide application. Solid state photodetectors allow operation in strong magnetic fields that are often present in applications, e.g., some calorimeters operating near magnets, combined PET and MRT, etc. The photon detection efficiency (PDE) of photodiodes may reach values a few times higher than that of PMTs. Also, they are rigid, compact and have relatively low operating voltage. In the last few years Micropixel Avalanche PhotoDiodes (MAPDs) have been developed and started to be used. The MAPD combines a lot of advantages of semiconductor photodetectors and has a high gain, which is close to that of the PMT. Yet, they have some disadvantages, and one of them is a limited dynamic range that corresponds to a total number of pixels. The novel deep microwell MAPD with high pixel density produced by Zecotek Company partially avoids this disadvantage. In this paper characteristics of these photodetectors are presented in comparison with the PMT characteristics. The results refer to measurements of the gain, PDE, cross-talks, photon counting and applications: beam test results of two different 'Shashlyk' EM calorimeters for COMPASS (CERN) and NICA-MPD (JINR) with the MAPD readout and a possibility of using the MAPD in PET

  4. FFTF fuel pin design bases and performance

    International Nuclear Information System (INIS)

    Cox, C.M.; Hanson, J.E.; Roake, W.E.; Slember, R.J.; Weber, C.E.; Millunzi, A.C.

    1975-04-01

    The FFTF fuel pin was conservatively designed to meet thermal and structural performance requirements in the categories normal operation, upset events, emergency events, and hypothetical, faulted events. The fuel pin operating limits consistent with these requirements were developed from a strong fuel pin irradiation testing program scoped to define the performance capability under relevant steady state and transient conditions. Comparison of the results of the irradiation testing program with design requirements indicates that the FFTF fuel pin can exceed its goal burnup of 80,000 MWd/MTM. (U.S.)

  5. Integral Fast Reactor fuel pin processor

    International Nuclear Information System (INIS)

    Levinskas, D.

    1993-01-01

    This report discusses the pin processor which receives metal alloy pins cast from recycled Integral Fast Reactor (IFR) fuel and prepares them for assembly into new IFR fuel elements. Either full length as-cast or precut pins are fed to the machine from a magazine, cut if necessary, and measured for length, weight, diameter and deviation from straightness. Accepted pins are loaded into cladding jackets located in a magazine, while rejects and cutting scraps are separated into trays. The magazines, trays, and the individual modules that perform the different machine functions are assembled and removed using remote manipulators and master-slaves

  6. Magnetic pinning in superconductor-ferromagnet multilayers

    International Nuclear Information System (INIS)

    Bulaevskii, L. N.; Chudnovsky, E. M.; Maley, M. P.

    2000-01-01

    We argue that superconductor/ferromagnet multilayers of nanoscale period should exhibit strong pinning of vortices by the magnetic domain structure in magnetic fields below the coercive field when ferromagnetic layers exhibit strong perpendicular magnetic anisotropy. The estimated maximum magnetic pinning energy for single vortex in such a system is about 100 times larger than the pinning energy by columnar defects. This pinning energy may provide critical currents as high as 10 6 -10 7 A/cm 2 at high temperatures (but not very close to T c ) at least in magnetic fields below 0.1 T. (c) 2000 American Institute of Physics

  7. Magnetic pinning in superconductor-ferromagnet multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Bulaevskii, L. N. [Department of Physics and Astronomy, CUNY Lehman College 250 Bedford Park Boulevard West, Bronx, New York 10468-1589 (United States); Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Chudnovsky, E. M. [Department of Physics and Astronomy, CUNY Lehman College, 250 Bedford Park Boulevard West, Bronx, New York 10468-1589 (United States); Maley, M. P. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    2000-05-01

    We argue that superconductor/ferromagnet multilayers of nanoscale period should exhibit strong pinning of vortices by the magnetic domain structure in magnetic fields below the coercive field when ferromagnetic layers exhibit strong perpendicular magnetic anisotropy. The estimated maximum magnetic pinning energy for single vortex in such a system is about 100 times larger than the pinning energy by columnar defects. This pinning energy may provide critical currents as high as 10{sup 6}-10{sup 7} A/cm{sup 2} at high temperatures (but not very close to T{sub c}) at least in magnetic fields below 0.1 T. (c) 2000 American Institute of Physics.

  8. Fabrication of FFTF fuel pin wire wrap

    International Nuclear Information System (INIS)

    Epperson, E.M.

    1980-06-01

    Lateral spacing between FFTF fuel pins is required to provide a passageway for the sodium coolant to flow over each pin to remove heat generated by the fission process. This spacing is provided by wrapping each fuel pin with type 316 stainless steel wire. This wire has a 1.435mm (0.0565 in.) to 1.448mm (0.0570 in.) diameter, contains 17 +- 2% cold work and was fabricated and tested to exacting RDT Standards. About 500 kg (1100 lbs) or 39 Km (24 miles) of fuel pin wrap wire is used in each core loading. Fabrication procedures and quality assurance tests are described

  9. Photodiode Based on CdO Thin Films as Electron Transport Layer

    Science.gov (United States)

    Soylu, M.; Kader, H. S.

    2016-11-01

    Cadmium oxide (CdO) thin films were synthesized by the sol-gel method. The films were analyzed by means of XRD, AFM, and UV/Vis spectrophotometry. X-ray diffraction patterns confirm that the films are formed from CdO with cubic crystal structure and consist of nano-particles. The energy gap of the prepared film was found to be 2.29 eV. The current-voltage ( I- V) characteristics of the CdO/ p-Si heterojunction were examined in the dark and under different illumination intensities. The heterojunction showed high rectifying behavior and a strong photoresponse. Main electrical parameters of the photodiode such as series and shunt resistances ( R s and R sh), saturation current I 0, and photocurrent I ph, were extracted considering a single diode equivalent circuit of a photovoltaic cell. Results indicate that the application of CdO thin films as an electron transport layer on p-Si acts as a photodetector in the field of the UV/visible.

  10. Visible-blind and solar-blind ultraviolet photodiodes based on (In{sub x}Ga{sub 1−x}){sub 2}O{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Zhipeng; Wenckstern, Holger von; Lenzner, Jörg; Lorenz, Michael; Grundmann, Marius [Institut für Experimentelle Physik II, Fakultät für Physik und Geowissenschaften, Universität Leipzig, Linnéstraße 5, 04103 Leipzig (Germany)

    2016-03-21

    UV and deep-UV selective photodiodes from visible-blind to solar-blind were realized based on a Si-doped (In{sub x}Ga{sub 1–x}){sub 2}O{sub 3} thin film with a monotonic lateral variation of 0.0035 < x < 0.83. Such layer was deposited by employing a continuous composition spread approach relying on the ablation of a single segmented target in pulsed-laser deposition. The photo response signal is provided from a metal-semiconductor-metal structure upon backside illumination. The absorption onset was tuned from 4.83 to 3.22 eV for increasing x. Higher responsivities were observed for photodiodes fabricated from indium-rich part of the sample, for which an internal gain mechanism could be identified.

  11. Reduction of halo pin site morbidity with a new pin care regimen.

    Science.gov (United States)

    Kazi, Hussain Anthony; de Matas, Marcus; Pillay, Robin

    2013-06-01

    A retrospective analysis of halo device associated morbidity over a 4-year period. To assess the impact of a new pin care regimen on halo pin site related morbidity. Halo orthosis treatment still has a role in cervical spine pathology, despite increasing possibilities of open surgical treatment. Published figures for pin site infection range from 12% to 22% with pin loosening from 7% to 50%. We assessed the outcome of a new pin care regimen on morbidity associated with halo spinal orthoses, using a retrospective cohort study from 2001 to 2004. In the last two years, our pin care regimen was changed. This involved pin site care using chlorhexidene & regular torque checking as part of a standard protocol. Previously, povidone iodine was used as skin preparation in theatre, followed by regular sterile saline cleansing when pin sites became encrusted with blood. There were 37 patients in the series, the median age was 49 (range, 22-83) and 20 patients were male. The overall infection rate prior to the new pin care protocol was 30% (n=6) and after the introduction, it dropped to 5.9% (n=1). This difference was statistically significant (p<0.05). Pin loosening occurred in one patient in the group prior to the formal pin care protocol (3%) and none thereafter. Reduced morbidity from halo use can be achieved with a modified pin cleansing and tightening regimen.

  12. Phosphorylation of conserved PIN motifs directs Arabidopsis PIN1 polarity and auxin transport

    NARCIS (Netherlands)

    Huang, F.; Kemel Zago, M.; Abas, L.; van Marion, A.; Galván-Ampudia, C.S.; Offringa, R.

    2010-01-01

    Polar cell-to-cell transport of auxin by plasma membrane-localized PIN-FORMED (PIN) auxin efflux carriers generates auxin gradients that provide positional information for various plant developmental processes. The apical-basal polar localization of the PIN proteins that determines the direction of

  13. A fiber-optic technique for the measurement of contact angle in a clearance-fit pin-loaded hole

    Science.gov (United States)

    Prabhakaran, R.; Naik, R. A.

    1987-01-01

    A fiber-optic technique for measuring contact angle during pin loading of a specimen is proposed. The experimental design and procedures for loading a 49.8-mm-diameter instrumented pin into an quasi-isotropic graphite-epoxy specimen are described. The optical fiber was located just above the surface of the pin outer diameter in order to obtain accurate pin-hole contact-angle measurements at increasing load levels. The movement of the optical fiber through the no-contact, contact, and no-contact regions is discussed; the photodiode output decreased monotonically as the fiber moved from the no-contact to the contact region and then decreased monotonically as the fiber moved from the contact region to the no-contact region. Variations in the contact angle measurements are examined as function of applied load level. The measurements are compared to contact angle values obtained using a finite element analysis and an electrical technique; it is determined that the data correlate well.

  14. Evaluation of BPW-34 photodiode answer for 10 MeV electron dosimetry

    International Nuclear Information System (INIS)

    Khoury, H.J.; Melo, F.A.; Hazin, C.A.

    1992-01-01

    The viability of commercial photodiodes used for dosimetry of high energy electron beams was studied. The measures were made in a linear accelerators of 10 MeV, using the BPW-34 photodiode. The average energy of electrons on phantom surface and their average range were determined with the photodiode, and the results were compared with the obtained with a ionization chamber of parallel plate. (C.G.C.)

  15. The Use of Self-scanned Silicon Photodiode Arrays for Astronomical Spectrophotometry

    Science.gov (United States)

    Cochran, A. L.

    1984-01-01

    The use of a Reticon self scanned silicon photodiode array for precision spectrophotometry is discussed. It is shown that internal errors are + or - 0.003 mag. Observations obtained with a photodiode array are compared with observations obtained with other types of detectors with agreement, from 3500 A to 10500 A, of 1%. The photometric properties of self scanned photodiode arrays are discussed. Potential pitfalls are given.

  16. Highly enhanced avalanche probability using sinusoidally-gated silicon avalanche photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, Shingo; Namekata, Naoto, E-mail: nnao@phys.cst.nihon-u.ac.jp; Inoue, Shuichiro [Institute of Quantum Science, Nihon University, 1-8-14 Kanda-Surugadai, Chiyoda-ku, Tokyo 101-8308 (Japan); Tsujino, Kenji [Tokyo Women' s Medical University, 8-1 Kawada-cho, Shinjuku-ku, Tokyo 162-8666 (Japan)

    2014-01-27

    We report on visible light single photon detection using a sinusoidally-gated silicon avalanche photodiode. Detection efficiency of 70.6% was achieved at a wavelength of 520 nm when an electrically cooled silicon avalanche photodiode with a quantum efficiency of 72.4% was used, which implies that a photo-excited single charge carrier in a silicon avalanche photodiode can trigger a detectable avalanche (charge) signal with a probability of 97.6%.

  17. Synchronizability on complex networks via pinning control

    Indian Academy of Sciences (India)

    Keywords. Complex network; the pinning synchronization; synchronizability. ... The findings reveal the relationship between the decreasing speed of maximum eigenvalue sequence of the principal submatrices for coupling matrix and the synchronizability on complex networks via pinning control. We discuss the ...

  18. Breached-pin testing in the US

    International Nuclear Information System (INIS)

    Mahagin, D.E.; Lambert, J.D.B.

    1981-04-01

    Experience gained at EBR-II by the late 1970's from a significant number of failures in experimental fuel-pin irradiations forms the basis of a program directed towards the characterization of breached pins. The questions to be answered and the issues raised by further testing are discussed

  19. TACO: fuel pin performance analysis

    International Nuclear Information System (INIS)

    Stoudt, R.H.; Buchanan, D.T.; Buescher, B.J.; Losh, L.L.; Wilson, H.W.; Henningson, P.J.

    1977-08-01

    The thermal performance of fuel in an LWR during its operational lifetime must be described for LOCA analysis as well as for other safety analyses. The determination of stored energy in the LOCA analysis, for example, requires a conservative fuel pin thermal performance model that is capable of calculating fuel and cladding behavior, including the gap conductance between the fuel and cladding, as a function of burnup. The determination of parameters that affect the fuel and cladding performance, such as fuel densification, fission gas release, cladding dimensional changes, fuel relocation, and thermal expansion, should be accounted for in the model. Babcock and Wilcox (B and W) has submitted a topical report, BAW-10087P, December 1975, which describes their thermal performance model TACO. A summary of the elements that comprise the TACO model and an evaluation are presented

  20. Incommensurate pinning mechanism in KCP

    International Nuclear Information System (INIS)

    Apostol, M.; Baldea, I.

    1984-07-01

    A new pinning mechanism (termed incommensurate) is put forward for K 2 Pt(CN) 4 Brsub(0.3)x3.2H 2 O(KCP) based on the Q-quasi-modulated distribution of the bromine anions (Br-bar) along the chain axis (Q/2 being the Fermi momentum reduced to the first Brillouin zone). The different origins of the direct current (d.c.) thermally-activated gap and optical gap are thereby explained. The spectrum of the collective excitations (amplitudons and phasons) and the dielectric function are calculated for the charge density wave (CDW) state. Fair agreement is obtained with the optical and neutron scattering data. (author)

  1. Pinning impulsive control algorithms for complex network

    International Nuclear Information System (INIS)

    Sun, Wen; Lü, Jinhu; Chen, Shihua; Yu, Xinghuo

    2014-01-01

    In this paper, we further investigate the synchronization of complex dynamical network via pinning control in which a selection of nodes are controlled at discrete times. Different from most existing work, the pinning control algorithms utilize only the impulsive signals at discrete time instants, which may greatly improve the communication channel efficiency and reduce control cost. Two classes of algorithms are designed, one for strongly connected complex network and another for non-strongly connected complex network. It is suggested that in the strongly connected network with suitable coupling strength, a single controller at any one of the network's nodes can always pin the network to its homogeneous solution. In the non-strongly connected case, the location and minimum number of nodes needed to pin the network are determined by the Frobenius normal form of the coupling matrix. In addition, the coupling matrix is not necessarily symmetric or irreducible. Illustrative examples are then given to validate the proposed pinning impulsive control algorithms

  2. Resistance projection welding small pins in vacuum tube feedthrough assembly

    International Nuclear Information System (INIS)

    Kuncz, F. Jr.

    1980-01-01

    Resistance projection welding of two stainless steel pins to a cup is successfully accomplished by specially designed electrodes and by forming domes on the pin ends. Details of electrode and pin construction are given, as well as welding parameters

  3. Pin fin compliant heat sink with enhanced flexibility

    Science.gov (United States)

    Schultz, Mark D.

    2018-04-10

    Heat sinks and methods of using the same include a top and bottom plate, at least one of which has a plurality of pin contacts flexibly connected to one another, where the plurality of pin contacts have vertical and lateral flexibility with respect to one another; and pin slice layers, each having multiple pin slices, arranged vertically between the top and bottom plates such that the plurality of pin slices form substantially vertical pins connecting the top and bottom plates.

  4. Compact multispectral photodiode arrays using micropatterned dichroic filters

    Science.gov (United States)

    Chandler, Eric V.; Fish, David E.

    2014-05-01

    The next generation of multispectral instruments requires significant improvements in both spectral band customization and portability to support the widespread deployment of application-specific optical sensors. The benefits of spectroscopy are well established for numerous applications including biomedical instrumentation, industrial sorting and sensing, chemical detection, and environmental monitoring. In this paper, spectroscopic (and by extension hyperspectral) and multispectral measurements are considered. The technology, tradeoffs, and application fits of each are evaluated. In the majority of applications, monitoring 4-8 targeted spectral bands of optimized wavelength and bandwidth provides the necessary spectral contrast and correlation. An innovative approach integrates precision spectral filters at the photodetector level to enable smaller sensors, simplify optical designs, and reduce device integration costs. This method supports user-defined spectral bands to create application-specific sensors in a small footprint with scalable cost efficiencies. A range of design configurations, filter options and combinations are presented together with typical applications ranging from basic multi-band detection to stringent multi-channel fluorescence measurement. An example implementation packages 8 narrowband silicon photodiodes into a 9x9mm ceramic LCC (leadless chip carrier) footprint. This package is designed for multispectral applications ranging from portable color monitors to purpose- built OEM industrial and scientific instruments. Use of an eight-channel multispectral photodiode array typically eliminates 10-20 components from a device bill-of-materials (BOM), streamlining the optical path and shrinking the footprint by 50% or more. A stepwise design approach for multispectral sensors is discussed - including spectral band definition, optical design tradeoffs and constraints, and device integration from prototype through scalable volume production

  5. Sheet resistance effects in mercury cadmium telluride implanted photodiodes

    International Nuclear Information System (INIS)

    Fiorito, G.; Gasparrini, G.; Svelto, F.

    1977-01-01

    The frequency response of Hg + implanted Hgsub(1-x)Cdsub(x)Te photodiodes is discussed. This analysis, evaluating both the response to fast laser pulses and the 3 dB rolloff of the diode shot-noise spectrum, showed the necessity of adopting a distributed equivalent circuit model taking into account the implanted layer sheet resistance. Frequency behaviour, in fact, proved not to match a simple p-n junction model based on a lumped standard equivalent circuit. On this basis apparent anomalies previously reported can be explained, and useful suggestions can be obtained for design and fabrication of fast detectors. (author)

  6. Cesium chemistry in GCFR fuel pins

    International Nuclear Information System (INIS)

    Fee, D.C.; Johnson, C.E.

    1979-01-01

    The fuel rod design for the Gas Cooled Fast-Breeder Reactor (GCFR) is similar to that employed for the Liquid Metal Fast Breeder Reactor (LMFBR) with the exception of the unique features inherent to the use of helium as the coolant. These unique design features include the use of (1) vented and pressure-equalized fuel rods, and (2) ribbed cladding along 75% of the fuel section. The former design feature enables reduction in cladding thickness and prevention of possible creep collapse of the cladding due to the high coolant pressure (8.5 MPa). The latter design feature brings about improved heat transfer characteristics. Each GCFR fuel rod is vented to a manifold whereby gaseous fission products diffusing out of the fuel pin are retained on charcoal traps. As a result, the internal pressure of a GCFR fuel pin does not increase during irradiation. In addition, the venting system also maintains the pressure within the fuel pin slightly below (0.3 to 0.5 MPa) the coolant pressure outside the fuel pin. Consequently, should a breach occur in the cladding, helium flows into the breached fuel pin thereby minimizing fission product contamination of the coolant. These desirable aspects of a GCFR fuel pin can be maintained only as long as axial gas transport paths are available and operating within the fuel pin

  7. Vortex lattice melting, pinning and kinetics

    International Nuclear Information System (INIS)

    Doniach, S.; Ryu, S.; Kapitulnik, A.

    1994-01-01

    The phenomenology of the high T c superconductors is discussed both at the level of the thermodynamics of melting of the Abrikosov flux lattice and in terms of the melting and kinetics of the flux lattice for a pinned system. The authors review results on 3D melting obtained by a Monte Carlo simulation approach in which the 2D open-quotes pancakeclose quotes vortices are treated as statistical variables. The authors discuss pinning in the context of the strong pinning regime in which the vortex density given in terms of the applied field B is small compared to that represented by an effective field B pin measuring the pinning center density. The authors introduce a new criterion for the unfreezing of a vortex glass on increase of magnetic field or temperature, in the strong pinning, small field unit. The authors model this limit in terms of a single flux line interacting with a columnar pin. This model is studied both analytically and by computer simulation. By applying a tilt potential, the authors study the kinetics of the vortex motion in an external current and show that the resulting current-voltage characteristic follows a basic vortex glass-like scaling relation in the vicinity of the depinning transition

  8. Computer simulation of vortex pinning in type II superconductors. II. Random point pins

    International Nuclear Information System (INIS)

    Brandt, E.H.

    1983-01-01

    Pinning of vortices in a type II superconductor by randomly positioned identical point pins is simulated using the two-dimensional method described in a previous paper (Part I). The system is characterized by the vortex and pin numbers (N/sub v/, N/sub p/), the vortex and pin interaction ranges (R/sub v/, R/sub p/), and the amplitude of the pin potential A/sub p/. The computation is performed for many cases: dilute or dense, sharp or soft, attractive or repulsive, weak or strong pins, and ideal or amorphous vortex lattice. The total pinning force F as a function of the mean vortex displacment X increases first linearly (over a distance usually much smaller than the vortex spacing and than R/sub p/) and then saturates, fluctuating about its averaging F-bar. We interpret F-bar as the maximum pinning force j/sub c/B of a large specimen. For weak pins the prediction of Larkin and Ovchinnikov for two-dimensional collective pinning is confirmed: F-bar = const. iW/R/sub p/c 66 , where W-bar is the mean square pinning force and c 66 is the shear modulus of the vortex lattice. If the initial vortex lattice is chosen highly defective (''amorphous'') the constant is 1.3--3 times larger than for the ideal triangular lattice. This finding may explain the often observed ''history effect.'' The function F-bar(A/sub p/) exhibits a jump, which for dilute, sharp, attractive pins occurs close to the ''threshold value'' predicted for isolated pins by Labusch. This jump reflects the onset of plastic deformation of the vortex lattice, and in some cases of vortex trapping, but is not a genuine threshold

  9. Electro-optical fuel pin identification system

    International Nuclear Information System (INIS)

    Kirchner, T.L.

    1978-09-01

    A prototype Electro-Optical Fuel Pin Identification System referred to as the Fuel Pin Identification System (FPIS) has been developed by the Hanford Engineering Development Laboratory (HEDL) in support of the Fast Flux Test Facility (FFTF) presently under construction at HEDL. The system is designed to remotely read an alpha-numeric identification number that is roll stamped on the top of the fuel pin end cap. The prototype FPIS consists of four major subassemblies: optical read head, digital compression electronics, video display, and line printer

  10. Flux pinning characteristics of YBCO coated conductor

    International Nuclear Information System (INIS)

    Matsushita, T.; Watanabe, T.; Fukumoto, Y.; Yamauchi, K.; Kiuchi, M.; Otabe, E.S.; Kiss, T.; Watanabe, T.; Miyata, S.; Ibi, A.; Muroga, T.; Yamada, Y.; Shiohara, Y.

    2005-01-01

    Flux pinning properties of PLD-processed YBCO coated conductors deposited on IBAD substrate are investigated. The thickness of YBCO layer is changed in the range of 0.27-1.0 μm. The thickness dependence of critical current density, n-value and irreversibility field are measured in a wide range of magnetic field. The results are compared with the theoretical flux creep-flow model. It is found that these pinning properties are strongly influenced by the thickness as well as the pinning strength. Optimum condition for high field application of this superconductor is discussed

  11. Physical and electrical bandwidths of integrated photodiodes in standard CMOS technology

    NARCIS (Netherlands)

    Radovanovic, S.; Annema, Anne J.; Nauta, Bram

    2003-01-01

    The influence of different geometries (layouts) and structures of high-speed photodiodes in fully standard 0.18 μm CMOS technology on their intrinsic (physical) and electrical bandwidths is analyzed. Three photodiode structures are studied: nwell/p-substrate, p+/nwell/p-substrate and p+/nwell. The

  12. High quantum efficiency annular backside silicon photodiodes for reflectance pulse oximetry in wearable wireless body sensors

    DEFF Research Database (Denmark)

    Duun, Sune Bro; Haahr, Rasmus Grønbek; Hansen, Ole

    2010-01-01

    The development of annular photodiodes for use in a reflectance pulse oximetry sensor is presented. Wearable and wireless body sensor systems for long-term monitoring require sensors that minimize power consumption. We have fabricated large area 2D ring-shaped silicon photodiodes optimized...

  13. High speed photodiodes in standard nanometer scale CMOS technology: a comparative study.

    Science.gov (United States)

    Nakhkoob, Behrooz; Ray, Sagar; Hella, Mona M

    2012-05-07

    This paper compares various techniques for improving the frequency response of silicon photodiodes fabricated in mainstream CMOS technology for fully integrated optical receivers. The three presented photodiodes, Spatially Modulated Light detectors, Double, and Interrupted P-Finger photodiodes, aim at reducing the low speed diffusive component of the photo generated current. For the first photodiode, Spatially Modulated Light (SML) detectors, the low speed current component is canceled out by converting it to a common mode current driving a differential transimpedance amplifier. The Double Photodiode (DP) uses two depletion regions to increase the fast drift component, while the Interrupted-P Finger Photodiode (IPFPD) redirects the low speed component towards a different contact from the main fast terminal of the photodiode. Extensive device simulations using 130 nm CMOS technology-parameters are presented to compare their performance using the same technological platform. Finally a new type of photodiode that uses triple well CMOS technology is introduced that can achieve a bandwidth of roughly 10 GHz without any process modification or high reverse bias voltages that would jeopardize the photodetector and subsequent transimpedance amplifier reliability.

  14. Pinning and creep in superconductors

    International Nuclear Information System (INIS)

    Ovchinnikov, Yu.N.

    1994-01-01

    All superconductors can be separated into two large groups: type I and type II. The behaviour of these two groups in a magnetic field is quite different. The superconductors of type I, in a strong magnetic field, enter the intermediate state. Phenomenological picture of this state was given by Landau. The type II superconductors, in strong magnetic fields, form the mixed state (or Shubnikov phase). The microscopic picture of the mixed state was given by Abrikosov on the basis of Ginzburg-Landau equations. In ideal homogeneous superconductors the free energy is not changed if all the vortex structure is shifted on some distance u. The transport current will be proportional, therefore, to the electric field E. All the real superconductors, however, are inhomogeneous. Inhomogeneities interact with vortex lattice and pin it. In this new state the transport current below some critical value does not lead to the motion of the flux lattice and to the energy dissipation. The value of critical current strongly depends on the type of inhomogeneities, on the value of magnetic field and on temperature. In new layered superconductors, the critical current depends also on the orientation of the magnetic field B with respect to the layer planes. Temperature and quantum fluctuations lead to the transition between different metastable states in superconductors with current. As a result, the vortex lattice slowly moves (creep phenomenon). Below we will briefly discuss all these phenomena. (orig.)

  15. Evaluation of Space Radiation Effects on HgCdTe Avalanche Photodiode Arrays for Lidar Applications

    Science.gov (United States)

    Sun, Xiaoli; Abshire, James B.; Lauenstein, Jean-Marie; Sullivan, William III; Beck, Jeff; Hubbs, John E.

    2018-01-01

    We report the results from proton and gamma ray radiation testing of HgCdTe avalanche photodiode (APD) arrays developed by Leonardo DRS for space lidar detectors. We tested these devices with both approximately 60 MeV protons and gamma rays, with and without the read out integrated circuit (ROIC). We also measured the transient responses with the device fully powered and with the APD gain from unity to greater than 1000. The detectors produced a large current impulse in response to each proton hit but the response completely recovered within 1 microsecond. The devices started to have persistent damage at a proton fluence of 7e10 protons/cm2, equivalent to 10 krad(Si) total ionization dose. The dark current became much higher after the device was warmed to room temperature and cooled to 80K again, but it completely annealed after baking at 85 C for several hours. These results showed the HgCdTe APD arrays are suitable for use in space lidar for typical Earth orbiting and planetary missions provided that provisions are made to heat the detector chip to 85 C for several hours after radiation damage becomes evident that system performance is impacted.

  16. Vortex pinning by point defect in superconductors

    International Nuclear Information System (INIS)

    Liao Hongyin; Zhou Shiping; Du Haochen

    2003-01-01

    We apply the periodic time-dependent Ginzburg-Landau model to study vortex distribution in type-II superconductors with a point-like defect and square pinning array. A defect site will pin vortices, and a periodic pinning array with right geometric parameters, which can be any form designed in advance, shapes the vortex pattern as external magnetic field varies. The maximum length over which an attractive interaction between a pinning centre and a vortex extends is estimated to be about 6.0ξ. We also derive spatial distribution expressions for the order parameter, vector potential, magnetic field and supercurrent induced by a point defect. Theoretical results and numerical simulations are compared with each other and they are consistent

  17. Pinning Synchronization of Switched Complex Dynamical Networks

    Directory of Open Access Journals (Sweden)

    Liming Du

    2015-01-01

    Full Text Available Network topology and node dynamics play a key role in forming synchronization of complex networks. Unfortunately there is no effective synchronization criterion for pinning synchronization of complex dynamical networks with switching topology. In this paper, pinning synchronization of complex dynamical networks with switching topology is studied. Two basic problems are considered: one is pinning synchronization of switched complex networks under arbitrary switching; the other is pinning synchronization of switched complex networks by design of switching when synchronization cannot achieved by using any individual connection topology alone. For the two problems, common Lyapunov function method and single Lyapunov function method are used respectively, some global synchronization criteria are proposed and the designed switching law is given. Finally, simulation results verify the validity of the results.

  18. Nuclear fuel pin controlled failure device

    International Nuclear Information System (INIS)

    Schlenker, L.D.

    1975-01-01

    Each fuel pin of a fuel assembly for a water-cooled nuclear reactor is provided with means for rupturing the cladding tube at a predetermined location if an abnormal increase in pressure of the gases present occurs due to a loss-of-coolant accident. Preferably all such rupture means are oriented to minimize the hydraulic resistance to the flow of emergency core coolant such as all rupture means pointing in the same direction. Rupture means may be disposed at different elevations in adjacent fuel pins and, further, fuel pins may be provided with two or more rupture means, one of which is in the upper portion of the fuel pin. Rupture means are mechanical as by providing a locally weakened condition of a controlled nature in the cladding. (U.S.)

  19. Ultrasonic inspections of fuel alignment pins

    International Nuclear Information System (INIS)

    Rathgeb, W.; Schmid, R.

    1994-01-01

    As a remedy to the practical problem of defects in fuel alignment pins made of Inconel X750, an inspection technique has been developed which fully meets the requirements of detecting defects. The newly used fuel alignment pins made of austenite are easy to test and therefore satisfy the necessity of further inspections.For the fuel alignment pins of the upper core structure a safe and fast inspection technique was made available. The inspection sensitivity is high and it is possible to give quantitative directions concerning defect orientation and depth. After the required inspections had been concluded in 1989, a total of 18 inspections were carried out in various national and international nuclear power plants in the following years. During this time more than 6000 fuel alignment pines were examined.For the fuel alignment pins the inspection technique provided could increase the understanding of the defect process. This technique contributed to the development of an adaptive and economical repair strategy. ((orig.))

  20. Experimental studies on using silicon photodiode as read-out component of CsI(Tl) crystal

    International Nuclear Information System (INIS)

    He Jingtang; Chen Duanbao; Li Zuhao; Mao Yufang; Dong Xiaoli

    1996-01-01

    Experimental studies on using silicon photodiode as the read-out component of CsI(Tl) crystal are reported. The read-out properties of two different types of silicon photodiode produced by Hamamatsu were measured, including relations between energy resolution and bias, shaping time, sensitive area of photodiode and the dimension of the crystal

  1. Bio-inspired nano-photodiode for Low Light, High Resolution and crosstalk-free CMOS image sensing

    KAUST Repository

    Saffih, Faycal; Fitzpatrick, Nathaniel N.; Mohammad, Mohammad Ali; Evoy, S.; Cui, Bo

    2011-01-01

    photodiode morphology. The proposed bio-inspired nanorod photodiode puts the depletion region length on the path of the incident photon instead of on its width, as the case is with the planar photodiodes. The depletion region has a revolving volume

  2. Application of PIN diodes in Physics Research

    International Nuclear Information System (INIS)

    Ramirez-Jimenez, F. J.; Mondragon-Contreras, L.; Cruz-Estrada, P.

    2006-01-01

    A review of the application of PIN diodes as radiation detectors in different fields of Physics research is presented. The development and research in semiconductor technology, the use of PIN diodes in particle counting, X-and γ-ray spectroscopy, medical applications and charged particle spectroscopy are considered. Emphasis is made in the activities realized in the different research and development Mexican institutions dealing with this kind of radiation detectors

  3. IMp: The customizable LEGO® Pinned Insect Manipulator

    Directory of Open Access Journals (Sweden)

    Steen Dupont

    2015-02-01

    Full Text Available We present a pinned insect manipulator (IMp constructed of LEGO® building bricks with two axes of movement and two axes of rotation. In addition we present three variants of the IMp to emphasise the modular design, which facilitates resizing to meet the full range of pinned insect specimens, is fully customizable, collapsible, affordable and does not require specialist tools or knowledge to assemble.

  4. IMp: The customizable LEGO® Pinned Insect Manipulator

    Science.gov (United States)

    Dupont, Steen; Price, Benjamin; Blagoderov, Vladimir

    2015-01-01

    Abstract We present a pinned insect manipulator (IMp) constructed of LEGO® building bricks with two axes of movement and two axes of rotation. In addition we present three variants of the IMp to emphasise the modular design, which facilitates resizing to meet the full range of pinned insect specimens, is fully customizable, collapsible, affordable and does not require specialist tools or knowledge to assemble. PMID:25685035

  5. Anisotropic flux pinning in high Tc superconductors

    International Nuclear Information System (INIS)

    Kolesnik, S.; Igalson, J.; Skoskiewicz, T.; Szymczak, R.; Baran, M.; Pytel, K.; Pytel, B.

    1995-01-01

    In this paper we present a comparison of the results of FC magnetization measurements on several Pb-Sr-(Y,Ca)-Cu-O crystals representing various levels of flux pinning. The pinning centers in our crystals have been set up during the crystal growth process or introduced by neutron irradiation. Some possible explanations of the observed effects, including surface barrier, flux-center distribution and sample-shape effects, are discussed. ((orig.))

  6. Investigation on macroscopic cross section model for BWR pin-by-pin core analysis - 118

    International Nuclear Information System (INIS)

    Fujita, T.; Tada, K.; Yamamoto, A.; Yamane, Y.; Kosaka, S.; Hirano, G.

    2010-01-01

    A cross section model used in the pin-by-pin core analysis for BWR is investigated. In the pin-by-pin core calculation method, pin-cell averaged cross sections are calculated for many combinations of state and history variables that have influences on the cross section and are tabulated prior to the core calculations. Variation of a cross section in a core simulator is classified into two different types, i.e., the instantaneous effect and the history effect. The instantaneous effect is incorporated by the variation of cross section which is caused by the instantaneous change of state variables. For this effect, the exposure, the void fraction, the fuel temperature, the moderator temperature and the control rod are used as indexes. The history effect is the cumulative effect of state variables. We treat this effect with a unified approach using the spectral history. To confirm accuracy of the cross section model, the pin-by-pin fission rate distribution and the k-infinity of fuel assembly which are obtained with the tabulated and the reference cross sections are compared. For the instantaneous effect, the present cross section model well reproduces the reference results for all off-nominal conditions. For the history effect, however, considerable differences both on the pin-by-pin fission rate distribution and the k-infinity are observed at high exposure points. (authors)

  7. A macroscopic cross-section model for BWR pin-by-pin core analysis

    International Nuclear Information System (INIS)

    Fujita, Tatsuya; Endo, Tomohiro; Yamamoto, Akio

    2014-01-01

    A macroscopic cross-section model used in boiling water reactor (BWR) pin-by-pin core analysis is studied. In the pin-by-pin core calculation method, pin-cell averaged cross sections are calculated for many combinations of core state and depletion history variables and are tabulated prior to core calculations. Variations of cross sections in a core simulator are caused by two different phenomena (i.e. instantaneous and history effects). We treat them through the core state variables and the exposure-averaged core state variables, respectively. Furthermore, the cross-term effect among the core state and the depletion history variables is considered. In order to confirm the calculation accuracy and discuss the treatment of the cross-term effect, the k-infinity and the pin-by-pin fission rate distributions in a single fuel assembly geometry are compared. Some cross-term effects could be negligible since the impacts of them are sufficiently small. However, the cross-term effects among the control rod history (or the void history) and other variables have large impacts; thus, the consideration of them is crucial. The present macroscopic cross-section model, which considers such dominant cross-term effects, well reproduces the reference results and can be a candidate in practical applications for BWR pin-by-pin core analysis on the normal operations. (author)

  8. Improved pinning by multiple in-line damage

    Energy Technology Data Exchange (ETDEWEB)

    Weinstein, Roy [Beam Particle Dynamics Laboratories, University of Houston, Houston, TX 77204-5005 (United States); Sawh, Ravi-Persad [Beam Particle Dynamics Laboratories, University of Houston, Houston, TX 77204-5005 (United States); Gandini, Alberto [Beam Particle Dynamics Laboratories, University of Houston, Houston, TX 77204-5005 (United States); Parks, Drew [Beam Particle Dynamics Laboratories, University of Houston, Houston, TX 77204-5005 (United States)

    2005-02-01

    Columnar pinning centres provide the largest pinning potential, U{sub pin}, but not the greatest J{sub c} or pinnable field, B{sub pin}. Characteristics of ion-generated columnar defects which limit J{sub c} and B{sub pin} are discussed, including reduction of the percolation path, and the need for a larger number of columns of damage, for pinning, than are usually estimated. It is concluded that columnar pinning centres limit B{sub pin} to less than 4 T, and also severely reduce J{sub c}. The goal of maximizing U{sub pin}, via columnar centres, appears to have obscured a more rewarding approach and resulted in neglect of a large regime of ion interactions. Evidence is reviewed that multiple in-line damage (MILD), described herein, can provide orders of magnitude higher J{sub c} and B{sub pin}, despite providing lower U{sub pin}. The MILD pinning centre morphology is discussed, and it is estimated that for present-day large grain high T{sub c} superconductors, a J{sub c} value of {approx}10{sup 6}Acm{sup -2} is obtainable at 77 K, even when crystal plane alignment and weak links are not improved. In addition, the pinned field is increased by over an order of magnitude. An experiment is proposed to confirm these calculations, directly compare MILD pinning to continuous columnar pinning, and determine the optimum MILD structure. Applications of MILD pinning are discussed.

  9. Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect

    Science.gov (United States)

    Di Bartolomeo, Antonio; Luongo, Giuseppe; Giubileo, Filippo; Funicello, Nicola; Niu, Gang; Schroeder, Thomas; Lisker, Marco; Lupina, Grzegorz

    2017-06-01

    We propose a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in parallel with a Gr/SiO2/Si capacitor for high-performance photodetection. The device, fabricated by transfer of commercial graphene on low-doped n-type Si substrate, achieves a photoresponse as high as 3 \\text{A} {{\\text{W}}-1} and a normalized detectivity higher than 3.5× {{10}12} \\text{cm} \\text{H}{{\\text{z}}1/2} {{\\text{W}}-1} in the visible range. It exhibits a photocurrent exceeding the forward current because photo-generated minority carriers, accumulated at Si/SiO2 interface of the Gr/SiO2/Si capacitor, diffuse to the Gr/Si junction. We show that the same mechanism, when due to thermally generated carriers, although usually neglected or disregarded, causes the increased leakage often measured in Gr/Si heterojunctions. We perform extensive I-V and C-V characterization at different temperatures and we measure a zero-bias Schottky barrier height of 0.52 eV at room temperature, as well as an effective Richardson constant A **  =  4× {{10}-5} \\text{A} \\text{c}{{\\text{m}}-2} {{\\text{K}}-2} and an ideality factor n≈ 3.6 , explained by a thin (<1 nm) oxide layer at the Gr/Si interface.

  10. The role of the substrate in Graphene/Silicon photodiodes

    Science.gov (United States)

    Luongo, G.; Giubileo, F.; Iemmo, L.; Di Bartolomeo, A.

    2018-01-01

    The Graphene/Silicon (Gr/Si) junction can function as a Schottky diode with performances strictly related to the quality of the interface. Here, we focus on the substrate geometry and on its effects on Gr/Si junction physics. We fabricate and study the electrical and optical behaviour of two types of devices: one made of a Gr/Si planar junction, the second realized with graphene on an array of Si nanotips. We show that the Gr/Si flat device exhibits a reverse photocurrent higher than the forward current and achieves a photoresponsivity of 2.5 A/W. The high photoresponse is due to the charges photogenerated in Si below a parasitic graphene/SiO2/Si structure, which are injected into the Gr/Si junction region. The other device with graphene on Si-tips displays a reverse current that grows exponentially with the bias. We explain this behaviour by taking into account the tip geometry of the substrate, which magnifies the electric field and shifts the Fermi level of graphene, thus enabling fine-tuning of the Schottky barrier height. The Gr/Si-tip device achieves a higher photoresponsivity, up to 3 A/W, likely due to photocharge internal multiplication.

  11. InGaAs/GaAsSb Type-II superlattice based photodiodes for short wave infrared detection

    Science.gov (United States)

    Uliel, Y.; Cohen-Elias, D.; Sicron, N.; Grimberg, I.; Snapi, N.; Paltiel, Y.; Katz, M.

    2017-08-01

    Short Wave Infra-Red (SWIR) photodetectors operating above the response cutoff of InGaAs- based detectors (1.7-2.5 μm) are required for both defense and civil applications. Type II Super-Lattices (T2SL) were recently proposed For near- room temperature SWIR detection as a possible system enabling bandgap adjustment in the required range. The work presented here focuses on a T2SL with alternating nano-layers of InGaAs and GaAsSb lattice-matched to an InP substrate. A near room temperature SWIR cutoff of 2.4 μm was measured. Electrical junctions were realized using Zn diffusion p-doping process. We realized and studied both mesa- and selective diffusion- based p-i-n photodiodes. Dark currents of mesa-based devices were 1.5 mA/cm2 and 32 μA/cm2 at 300 and 230 K respectively. Dark currents were reduced to 1.2 mA/cm2 and 12 μA/cm2 respectively by utilizing the selective diffusion process. The effect of operating voltage is discussed. At 300 K the quantum efficiency was up to 40% at 2.18 μm in mesa devices. D∗ was 1.7 ×1010cm ·√{Hz } /W at 2 μm.

  12. Lifetime control of the minority carrier in PiN diodes by He+ ion implantation

    International Nuclear Information System (INIS)

    Tanaka, Y.; Kojima, K.; Takao, K.; Okamoto, M.; Kawasaki, M.; Takatsuka, A.; Yatsuo, T.; Arai, K.

    2005-01-01

    This paper reports the first demonstration of the lifetime control of the minority carrier in 4H-SiC PiN diodes by He + ion implantation. In this work, we fabricated 4H-SiC PiN diodes with the epitaxial junction and the blocking voltage of 2.6 kV, precisely corresponding to the theoretical blocking voltage calculated from the doping concentration (4.0 x 10 15 /cm 2 ) and the thickness of the drift layer (16.5 μm). He + ion implantation was performed with the energy and the dose of 400 kV and 1.0 x 10 13 -2.0 x 10 14 /cm 2 , respectively. We observed no different characteristics in the blocking voltage (2.6kV) and leakage current ( + ion implantation. However, we confirmed the improvement of the current recovery characteristics in the diodes with He + ion implantation. (orig.)

  13. Heterogeneous neutron-leakage model for PWR pin-by-pin calculation

    International Nuclear Information System (INIS)

    Li, Yunzhao; Zhang, Bin; Wu, Hongchun; Shen, Wei

    2017-01-01

    Highlights: •The derivation of the formula of the leakage model is introduced. This paper evaluates homogeneous and heterogeneous leakage models used in PWR pin-by-pin calculation. •The implements of homogeneous and heterogeneous leakage models used in pin-cell homogenization of the lattice calculation are studied. A consistent method of cooperation between the heterogeneous leakage model and the pin-cell homogenization theory is proposed. •Considering the computational cost, a new buckling search scheme is proposed to reach the convergence faster. The computational cost of the newly proposed neutron balance scheme is much less than the power-method scheme and the linear-interpolation scheme. -- Abstract: When assembly calculation is performed with the reflective boundary condition, a leakage model is usually required in the lattice code. The previous studies show that the homogeneous leakage model works effectively for the assembly homogenization. However, it becomes different and unsettled for the pin-cell homogenization. Thus, this paper evaluates homogeneous and heterogeneous leakage models used in pin-by-pin calculation. The implements of homogeneous and heterogeneous leakage models used in pin-cell homogenization of the lattice calculation are studied. A consistent method of cooperation between the heterogeneous leakage model and the pin-cell homogenization theory is proposed. Considering the computational cost, a new buckling search scheme is proposed to reach the convergence faster. For practical reactor-core applications, the diffusion coefficients determined by the transport cross-section or by the leakage model are compared with each other to determine which one is more accurate for the Pressurized Water Reactor pin-by-pin calculation. Numerical results have demonstrated that the heterogeneous leakage model together with the diffusion coefficient determined by the heterogeneous leakage model would have the higher accuracy. The new buckling search

  14. Studies of avalanche photodiodes for scintillating fibre tracking readout

    International Nuclear Information System (INIS)

    Fenker, H.; Thomas, J.

    1993-01-01

    Avalanche Photodiodes (APDs) operating in ''Geiger Mode'' have been studied in a fibre tracking readout environment. A fast recharge circuit has been developed for high rate data taking, and results obtained from a model fibre tracker in the test beam at Brookhaven National Laboratory are presented. A high rate calibrated light source has been developed using a commercially available laser diode and has been used to measure the efficiency of the devices. The transmission of the light from a 1mm fibre onto a 0.5mm diameter APD surface has been identified as the main problem in the use of these particular devices for scintillating fibre tracking in the Superconducting Supercollider environment. Solutions to this problem are proposed

  15. Adaptive aperture for Geiger mode avalanche photodiode flash ladar systems

    Science.gov (United States)

    Wang, Liang; Han, Shaokun; Xia, Wenze; Lei, Jieyu

    2018-02-01

    Although the Geiger-mode avalanche photodiode (GM-APD) flash ladar system offers the advantages of high sensitivity and simple construction, its detection performance is influenced not only by the incoming signal-to-noise ratio but also by the absolute number of noise photons. In this paper, we deduce a hyperbolic approximation to estimate the noise-photon number from the false-firing percentage in a GM-APD flash ladar system under dark conditions. By using this hyperbolic approximation function, we introduce a method to adapt the aperture to reduce the number of incoming background-noise photons. Finally, the simulation results show that the adaptive-aperture method decreases the false probability in all cases, increases the detection probability provided that the signal exceeds the noise, and decreases the average ranging error per frame.

  16. Summary of conclusions of the vacuum photodiode working group

    International Nuclear Information System (INIS)

    Willis, W.

    1988-01-01

    This report presents the design of a 30 MV gun. In considering the design of the vacuum photodiode switched to drive the accelerating field in the gun, we have paid attention to the work of the groups on high-voltage pulsing and on the design of the laser. We have found that we can trade off reduced laser power at the cost of a higher charging voltage for our one stage accelerator. We have presented the various parameter sets to the two groups and attempted to measure their enthusiasm for each set, and we have chosen the set that seems to provide an equal level of difficulty on both sides. 1 fig., 1 tab

  17. Avalanche photodiode based time-of-flight mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Ogasawara, Keiichi, E-mail: kogasawara@swri.edu; Livi, Stefano A.; Desai, Mihir I.; Ebert, Robert W.; McComas, David J.; Walther, Brandon C. [Southwest Research Institute, 6220 Culebra Road, San Antonio, Texas 78238 (United States)

    2015-08-15

    This study reports on the performance of Avalanche Photodiodes (APDs) as a timing detector for ion Time-of-Flight (TOF) mass spectroscopy. We found that the fast signal carrier speed in a reach-through type APD enables an extremely short timescale response with a mass or energy independent <2 ns rise time for <200 keV ions (1−40 AMU) under proper bias voltage operations. When combined with a microchannel plate to detect start electron signals from an ultra-thin carbon foil, the APD comprises a novel TOF system that successfully operates with a <0.8 ns intrinsic timing resolution even using commercial off-the-shelf constant-fraction discriminators. By replacing conventional total-energy detectors in the TOF-Energy system, APDs offer significant power and mass savings or an anti-coincidence background rejection capability in future space instrumentation.

  18. Development of an X-ray detector using photodiodes

    International Nuclear Information System (INIS)

    Gonzalez G, J.; Azorin V, J. C.; Sosa A, M. A.; Ceron, P.

    2016-10-01

    Currently the radiation detectors for medical applications are very high value in the market and are difficult to access as training material. In the Sciences and Engineering Division of the Guanajuato University (Mexico) investigations are carried out related to ionizing radiations, especially with X-rays. To overcome the lack of materials has had to resort to borrowing equipment from other institutions, so its use and availability are intermittent. For these reasons is proposed to design and implement an X-ray detector for the use of the work group and the University. This work aims to build an X-ray semiconductor detector using inexpensive and affordable materials, is also proposed the use of a photodiode sensor and an Arduino analog-digital card and a LCD display showing the data. (Author)

  19. An excess noise measurement system for weak responsivity avalanche photodiodes

    Science.gov (United States)

    Qiao, Liang; Dimler, Simon J.; Baharuddin, Aina N. A. P.; Green, James E.; David, John P. R.

    2018-06-01

    A system for measuring, with reduced photocurrent, the excess noise associated with the gain in avalanche photodiodes (APDs), using a transimpedance amplifier front-end and based on phase-sensitive detection is described. The system can reliably measure the excess noise power of devices, even when the un-multiplied photocurrent is low (~10 nA). This is more than one order of magnitude better than previously reported systems and represents a significantly better noise signal to noise ratio. This improvement in performance has been achieved by increasing the value of the feedback resistor and reducing the op-amp bandwidth. The ability to characterise APD performance with such low photocurrents enables the use of low power light sources such as light emitting diode rather than lasers to investigate the APD noise performance.

  20. A compact readout system for multi-pixel hybrid photodiodes

    International Nuclear Information System (INIS)

    Datema, C.P.; Meng, L.J.; Ramsden, D.

    1999-01-01

    Although the first Multi-pixel Hybrid Photodiode (M-HPD) was developed in the early 1990s by Delft Electronic Products, the main obstacle to its application has been the lack of availability of a compact read-out system. A fast, parallel readout system has been constructed for use with the earlier 25-pixel tube with High-energy Physics applications in mind. The excellent properties of the recently developed multi-pixel hybrid photodiodes (M-HPD) will be easier to exploit following the development of the new hybrid read-out circuits described in this paper. This system will enable all of the required read-out functions to be accommodate on a single board into which the M-HPD is plugged. The design and performance of a versatile system is described in which a trigger-signal, derived from the common-side of the silicon anode in the M-HPD, is used to trigger the readout of the 60-anode pixels in the M-HPD. The multi-channel amplifier section is based on the use of a new, commercial VLSI chip, whilst the read-out sequencer uses a chip of its own design. The common anode signal is processed by a fast amplifier and discriminator to provide a trigger signal when a single event is detected. In the prototype version, the serial analogue output data-stream is processed using a PC-mounted, high speed ADC. Results obtained using the new read-out system in a compact gamma-camera and with a small muon tracking-chamber demonstrate the low-noise performance of the system. The application of this read-out system in other position-sensitive or multi-anode photomultiplier tube applications are also described

  1. Whole-Pin Furnace system: An experimental facility for studying irradiated fuel pin behavior under potential reactor accident conditions

    International Nuclear Information System (INIS)

    Liu, Y.Y.; Tsai, H.C.; Donahue, D.A.; Pushis, D.O.; Savoie, F.E.; Holland, J.W.; Wright, A.E.; August, C.; Bailey, J.L.; Patterson, D.R.

    1990-05-01

    The whole-pin furnace system is a new in-cell experimental facility constructed to investigate how irradiated fuel pins may fail under potential reactor accident conditions. Extensive checkouts have demonstrated excellent performance in remote operation, temperature control, pin breach detection, and fission gas handling. The system is currently being used in testing of EBIR-II-irradiated Integral Fast Reactor (IFR) metal fuel pins; future testing will include EBR-II-irradiated mixed-oxide fuel pins. 7 refs., 4 figs

  2. The photodiode of UV-range on the basis of ZnSe

    Directory of Open Access Journals (Sweden)

    Perevertailo V. L.

    2010-03-01

    Full Text Available The construction and technology of Shottky photodiode on the basis of ZnSe, sensible in the ultraviolet region of spectrum are considered. Researches of electrophysical and photo-electric descriptions of photodiodes of Shottky Nі–ZnSe(Te,O–Іn are conducted and it is shown, that they can be applied in devices for radiometry and dissymmetry UV radiations in the ranges UVA, UVB and UVC. Comparison of parameters of developed UV photodiodes based on ZnSe with analogues showed that small capacitance and low value of dark current is their substantial difference of other ones.

  3. Statistics of dislocation pinning at localized obstacles

    Energy Technology Data Exchange (ETDEWEB)

    Dutta, A. [S. N. Bose National Centre for Basic Sciences, Salt Lake, Kolkata 700098 (India); Bhattacharya, M., E-mail: mishreyee@vecc.gov.in; Barat, P. [Variable Energy Cyclotron Centre, 1/AF Bidhannagar, Kolkata 700064 (India)

    2014-10-14

    Pinning of dislocations at nanosized obstacles like precipitates, voids, and bubbles is a crucial mechanism in the context of phenomena like hardening and creep. The interaction between such an obstacle and a dislocation is often studied at fundamental level by means of analytical tools, atomistic simulations, and finite element methods. Nevertheless, the information extracted from such studies cannot be utilized to its maximum extent on account of insufficient information about the underlying statistics of this process comprising a large number of dislocations and obstacles in a system. Here, we propose a new statistical approach, where the statistics of pinning of dislocations by idealized spherical obstacles is explored by taking into account the generalized size-distribution of the obstacles along with the dislocation density within a three-dimensional framework. Starting with a minimal set of material parameters, the framework employs the method of geometrical statistics with a few simple assumptions compatible with the real physical scenario. The application of this approach, in combination with the knowledge of fundamental dislocation-obstacle interactions, has successfully been demonstrated for dislocation pinning at nanovoids in neutron irradiated type 316-stainless steel in regard to the non-conservative motion of dislocations. An interesting phenomenon of transition from rare pinning to multiple pinning regimes with increasing irradiation temperature is revealed.

  4. Pinning impulsive control algorithms for complex network

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Wen [School of Information and Mathematics, Yangtze University, Jingzhou 434023 (China); Lü, Jinhu [Academy of Mathematics and Systems Science, Chinese Academy of Sciences, Beijing 100190 (China); Chen, Shihua [College of Mathematics and Statistics, Wuhan University, Wuhan 430072 (China); Yu, Xinghuo [School of Electrical and Computer Engineering, RMIT University, Melbourne VIC 3001 (Australia)

    2014-03-15

    In this paper, we further investigate the synchronization of complex dynamical network via pinning control in which a selection of nodes are controlled at discrete times. Different from most existing work, the pinning control algorithms utilize only the impulsive signals at discrete time instants, which may greatly improve the communication channel efficiency and reduce control cost. Two classes of algorithms are designed, one for strongly connected complex network and another for non-strongly connected complex network. It is suggested that in the strongly connected network with suitable coupling strength, a single controller at any one of the network's nodes can always pin the network to its homogeneous solution. In the non-strongly connected case, the location and minimum number of nodes needed to pin the network are determined by the Frobenius normal form of the coupling matrix. In addition, the coupling matrix is not necessarily symmetric or irreducible. Illustrative examples are then given to validate the proposed pinning impulsive control algorithms.

  5. Prolyl isomerase Pin1 is highly expressed in Her2-positive breast cancer and regulates erbB2 protein stability

    Directory of Open Access Journals (Sweden)

    Lu Kun

    2008-12-01

    Full Text Available Abstract Overexpression of HER-2/Neu occurs in about 25–30% of breast cancer patients and is indicative of poor prognosis. While Her2/Neu overexpression is primarily a result of erbB2 amplification, it has recently been recognized that erbB2 levels are also regulated on the protein level. However, factors that regulate Her2/Neu protein stability are less well understood. The prolyl isomerase Pin1 catalyzes the isomerization of specific pSer/Thr-Pro motifs that have been phosphorylated in response to mitogenic signaling. We have previously reported that Pin1-catalyzed post-phosphorylational modification of signal transduction modulates the oncogenic pathways downstream from c-neu. The goal of this study was to examine the expression of prolyl isomerase Pin1 in human Her2+ breast cancer, and to study if Pin1 affects the expression of Her2/Neu itself. Methods Immunohistochemistry for Her2 and Pin1 were performed on two hundred twenty-three human breast cancers, with 59% of the specimen from primary cancers and 41% from metastatic sites. Pin1 inhibition was achieved using siRNA in Her2+ breast cancer cell lines, and its effects were studied using cell viability assays, immunoblotting and immunofluorescence. Results Sixty-four samples (28.7% stained positive for Her2 (IHC 3+, and 54% (122/223 of all breast cancers stained positive for Pin1. Of the Her2-positive cancers 40 (62.5% were also Pin1-positive, based on strong nuclear or nuclear and cytoplasmic staining. Inhibition of Pin1 via RNAi resulted in significant suppression of Her2-positive tumor cell growth in BT474, SKBR3 and AU565 cells. Pin1 inhibition greatly increased the sensitivity of Her2-positive breast cancer cells to the mTOR inhibitor Rapamycin, while it did not increase their sensitivity to Trastuzumab, suggesting that Pin1 might act on Her2 signaling. We found that Pin1 interacted with the protein complex that contains ubiquitinated erbB2 and that Pin1 inhibition accelerated erbB2

  6. Development of a fast pin-by-pin transport solver in ARCADIA registered

    International Nuclear Information System (INIS)

    Geemert, R. van

    2009-01-01

    For satisfaction of future global customer needs, dedicated efforts are being coordinated internationally and pursued continuously at AREVA NP. The currently ongoing CONVERGENCE project is committed to the development of the ARCADIA registered next generation core simulation software package. ARCADIA registered will be put to global use by all AREVA NP business regions, for the entire spectrum of core design processes, licensing computations and safety studies. As part of the currently ongoing trend towards more sophisticated neutronics methodologies, an SP 3 nodal transport concept (van Geemert 2008) has been developed for ARTEMIS (Hobson 2008) which is the steady-state and transient core simulation part of ARCADIA registered . For enabling a high computational performance, the SP 3 calculations are accelerated by applying multi-level coarse mesh rebalancing (van Geemert 2006). In the current implementation, SP 3 is typically about 1.4 times as expensive computationally as SP 1 (diffusion). The developed SP 3 solution concept is foreseen as the future computational workhorse for many-group 3D pin-by-pin full core computations by ARCADIA registered . With the entire numerical workload being highly parallelizable through domain decomposition techniques, associated CPU-time requirements that adhere to the efficiency needs in the nuclear industry can be expected to become feasible in the near future. The accuracy enhancement obtainable by using SP 3 instead of SP 1 has been verified by a detailed comparison of ARTEMIS 16-group pin-by-pin SP N results with KAERI's DeCart reference results (Kozlowski 2003) for the 2D pin-by-pin Purdue UO 2 /MOX benchmark. Within the associated pin-by-pin grid, large pin-to-pin variations in cross-section values occur due to the explicit modelling of guide tubes, gadolinium pins as well as the heterogeneous distribution of MOX assemblies and UO 2 assemblies featuring significantly different burnups. With a pin-by-pin grid as

  7. PINS Testing and Modification for Explosive Identification

    International Nuclear Information System (INIS)

    Seabury, E.H.; Caffrey, A.J.

    2011-01-01

    The INL's Portable Isotopic Neutron Spectroscopy System (PINS)1 non-intrusively identifies the chemical fill of munitions and sealed containers. PINS is used routinely by the U.S. Army, the Defense Threat Reduction Agency, and foreign military units to determine the contents of munitions and other containers suspected to contain explosives, smoke-generating chemicals, and chemical warfare agents such as mustard and nerve gas. The objects assayed with PINS range from softball-sized M139 chemical bomblets to 200 gallon DOT 500X ton containers. INL had previously examined2 the feasibility of using a similar system for the identification of explosives, and based on this proof-of-principle test, the development of a dedicated system for the identification of explosives in an improvised nuclear device appears entirely feasible. INL has been tasked by NNSA NA-42 Render Safe Research and Development with the development of such a system.

  8. Peripheral pin alignment system for fuel assemblies

    International Nuclear Information System (INIS)

    Anthony, A.J.

    1981-01-01

    An alignment system is provided for nuclear fuel assemblies in a nuclear core. The core support structure of the nuclear reactor includes upwardly pointing alignment pins arranged in a square grid and engage peripheral depressions formed in the lateral periphery of the lower ends of each of the fuel assemblies of the core. In a preferred embodiment, the depressions are located at the corners of the fuel assemblies so that each depression includes one-quarter of a cylindrical void. Accordingly, each fuel assembly is positioned and aligned by one-quarter of four separate alignment pins which engage the fuel assemblies at their lower exterior corners. (author)

  9. The properties of ITE's silicon avalanche photodiodes within the spectral range used in scintillation detection

    CERN Document Server

    Wegrzecka, I

    1999-01-01

    The design and properties of 3 mm silicon avalanche photodiodes developed at ITE are presented. Their performance parameters within the spectral range applicable in scintillation detection (400-700 nm) are discussed and compared to those for near infrared radiation.

  10. Evaluation of electrical crosstalk in high-density photodiode arrays for X-ray imaging applications

    International Nuclear Information System (INIS)

    Ji Fan; Juntunen, Mikko; Hietanen, Iiro

    2009-01-01

    Electrical crosstalk is one of the important parameters in the photodiode array detector for X-ray imaging applications, and it becomes more important when the density of the photodiode array becomes higher. This paper presents the design of the high-density photodiode array with 250 μm pitch and 50 μm gap. The electrical crosstalk of the demonstrated samples is evaluated and compared with different electrode configurations: cathode bias mode and anode bias mode. The measurement results show good electrical crosstalk, ∼0.23%, in cathode bias mode regardless of the bias voltage, and slightly decreased or increased electrical crosstalk in anode bias mode. Moreover, the quantum efficiency is also evaluated from the same samples, and it behaves similar to the electrical crosstalk. Finally, some design guidance of the high-density photodiode array is given based on the discussion.

  11. Readout of scintillator light with avalanche photodiodes for positron emission tomography

    International Nuclear Information System (INIS)

    Chen, Ruru; Fremout, A.; Tavernier, S.; Bruyndonckx, P.; Clement, D.; Loude, J.-F.; Morel, C.

    1999-01-01

    The noise properties and other relevant characteristics of avalanche photodiodes have been investigated with the perspective of replacing photomultiplier tubes in positron emission tomography. It is clearly demonstrated that they are a valid alternative to photomultiplier tubes in this application

  12. Tunneling Current Probe for Noncontract Wafer-Level Photodiode Array Testing

    National Research Council Canada - National Science Library

    Verdun, Horacio

    1999-01-01

    The Tunneling Current Probe (TCP) is an automated picometer-sensitive proximity sensor and current measurement system which measures the current through a photodiode detector array element by establishing a tunneling current...

  13. CsI(Tl)-photodiode detectors for gamma-ray spectroscopy

    CERN Document Server

    Fioretto, E; Viesti, G; Cinausero, M; Zuin, L; Fabris, D; Lunardon, M; Nebbia, G; Prete, G

    2000-01-01

    We report on the performances of CsI(Tl)-photodiode detectors for gamma-ray spectroscopy applications. Light output yield and energy resolution have been measured for different crystals and read-out configurations.

  14. The properties of ITE's silicon avalanche photodiodes within the spectral range used in scintillation detection

    Science.gov (United States)

    Wegrzecka, Iwona; Wegrzecki, Maciej

    1999-04-01

    The design and properties of 3 mm silicon avalanche photodiodes developed at ITE are presented. Their performance parameters within the spectral range applicable in scintillation detection (400-700 nm) are discussed and compared to those for near infrared radiation.

  15. Balanced PIN-TIA photoreceiver with integrated 3 dB fiber coupler for distributed fiber optic sensors

    Science.gov (United States)

    Datta, Shubhashish; Rajagopalan, Sruti; Lemke, Shaun; Joshi, Abhay

    2014-06-01

    We report a balanced PIN-TIA photoreceiver integrated with a 3 dB fiber coupler for distributed fiber optic sensors. This detector demonstrates -3 dB bandwidth >15 GHz and coupled conversion gain >65 V/W per photodiode through either input port of the 3 dB coupler, and can be operated at local oscillator power of +17 dBm. The combined common mode rejection of the balanced photoreceiver and the integrated 3 dB coupler is >20 dB. We also present measurement results with various optical stimuli, namely impulses, sinusoids, and pseudo-random sequences, which are relevant for time domain reflectometry, frequency domain reflectometry, and code correlation sensors, respectively.

  16. Pinning, flux diodes and ratchets for vortices interacting with conformal pinning arrays

    International Nuclear Information System (INIS)

    Olson Reichhardt, C. J.; Wang, Y. L.; Argonne National Laboratory; Xiao, Z. L.; Northern Illinois University, DeKalb, IL

    2016-01-01

    A conformal pinning array can be created by conformally transforming a uniform triangular pinning lattice to produce a new structure in which the six-fold ordering of the original lattice is conserved but where there is a spatial gradient in the density of pinning sites. Here we examine several aspects of vortices interacting with conformal pinning arrays and how they can be used to create a flux flow diode effect for driving vortices in different directions across the arrays. Under the application of an ac drive, a pronounced vortex ratchet effect occurs where the vortices flow in the easy direction of the array asymmetry. When the ac drive is applied perpendicular to the asymmetry direction of the array, it is possible to realize a transverse vortex ratchet effect where there is a generation of a dc flow of vortices perpendicular to the ac drive due to the creation of a noise correlation ratchet by the plastic motion of the vortices. We also examine vortex transport in experiments and compare the pinning effectiveness of conformal arrays to uniform triangular pinning arrays. In conclusion, we find that a triangular array generally pins the vortices more effectively at the first matching field and below, while the conformal array is more effective at higher fields where interstitial vortex flow occurs.

  17. Nuclear resonant scattering measurements on (57)Fe by multichannel scaling with a 64-pixel silicon avalanche photodiode linear-array detector.

    Science.gov (United States)

    Kishimoto, S; Mitsui, T; Haruki, R; Yoda, Y; Taniguchi, T; Shimazaki, S; Ikeno, M; Saito, M; Tanaka, M

    2014-11-01

    We developed a silicon avalanche photodiode (Si-APD) linear-array detector for use in nuclear resonant scattering experiments using synchrotron X-rays. The Si-APD linear array consists of 64 pixels (pixel size: 100 × 200 μm(2)) with a pixel pitch of 150 μm and depletion depth of 10 μm. An ultrafast frontend circuit allows the X-ray detector to obtain a high output rate of >10(7) cps per pixel. High-performance integrated circuits achieve multichannel scaling over 1024 continuous time bins with a 1 ns resolution for each pixel without dead time. The multichannel scaling method enabled us to record a time spectrum of the 14.4 keV nuclear radiation at each pixel with a time resolution of 1.4 ns (FWHM). This method was successfully applied to nuclear forward scattering and nuclear small-angle scattering on (57)Fe.

  18. Change of energy dependence for X-rays of photodiode detector

    International Nuclear Information System (INIS)

    Silva, M.F. da; Freitas, L.C. de

    1992-01-01

    The energy dependence of photodiode Siemens SFH-206 for X-rays beams of 24 kV to 50 kV was studied and compared with the ionization chamber of parallel plates. The photodiode presented 450% of maxim change response for the energy band studied. A study was made, using aluminium, acrylic, mylar aluminized and mylar graphitized filters and showed that the two last reduce this maxim change response to 101% and 108%, respectively. (C.G.C.)

  19. Design of a terahertz CW photomixer based on PIN and superlattice PIN devices

    DEFF Research Database (Denmark)

    Krozer, Viktor; Eichhorn, Finn

    2006-01-01

    We present the design of a photomixer LO based on standard and superlattice PIN diodes, operating at 1 THz. The design is based on a direct integration of a double slot antenna with the PIN device and a suitable matching circuit. The antenna has been designed together with a dielectric lens using...... Ansoft HFSS EM simulation. The large-signal PIN diode model employed in the work has been improved compared to our previously developed model presented earlier in a 3 THz design. We demonstrate that the antenna characteristic changes drastically with the device in place....

  20. Tapered leaf support pin for operating plant guide tubes

    International Nuclear Information System (INIS)

    Land, J.T.; Hopkins, R.J.; Ford, D.E.

    1991-01-01

    This patent describes a mounting system for removably mounting the lower flange of a control rod guide tube over an opening in the upper core plate of a nuclear reactor comprising at least one elongated support pin mounted on the guide tube lower flange and resiliently receivable in a bore formed in the upper core plate. It comprises a support pin having a longitudinal axis and comprising a first pin portion mountable on the guide tube lower flange, and a second pin portion receivable within the upper core plate bore, the second pin portion including a solid body section adjacent the first pin portion and having an outer diameter which is accommodated by the bore by a close clearance fit; locking means mounted on the first pin portion of the support pin for retaining the guide tube lower flange between the solid body section of the second pin portion and the locking means; and a washer disposed around the first pin portion between the locking means and the control rod guide tube flange, the washer and the locking means including mutually engaging rounded surfaces for eliminating bending moments and stresses on the support pin during mounting of the locking means on the first pin portion of the support pin

  1. High quantum efficiency annular backside silicon photodiodes for reflectance pulse oximetry in wearable wireless body sensors

    International Nuclear Information System (INIS)

    Duun, Sune; Haahr, Rasmus G; Hansen, Ole; Birkelund, Karen; Thomsen, Erik V

    2010-01-01

    The development of annular photodiodes for use in a reflectance pulse oximetry sensor is presented. Wearable and wireless body sensor systems for long-term monitoring require sensors that minimize power consumption. We have fabricated large area 2D ring-shaped silicon photodiodes optimized for minimizing the optical power needed in reflectance pulse oximetry. To simplify packaging, backside photodiodes are made which are compatible with assembly using surface mounting technology without pre-packaging. Quantum efficiencies up to 95% and area-specific noise equivalent powers down to 30 fW Hz -1/2 cm -1 are achieved. The photodiodes are incorporated into a wireless pulse oximetry sensor system embedded in an adhesive patch presented elsewhere as 'The Electronic Patch'. The annular photodiodes are fabricated using two masked diffusions of first boron and subsequently phosphor. The surface is passivated with a layer of silicon nitride also serving as an optical filter. As the final process, after metallization, a hole in the center of the photodiode is etched using deep reactive ion etch.

  2. Mediating broadband light into graphene–silicon Schottky photodiodes by asymmetric silver nanospheroids: effect of shape anisotropy

    Science.gov (United States)

    Bhardwaj, Shivani; Parashar, Piyush K.; Roopak, Sangita; Ji, Alok; Uma, R.; Sharma, R. P.

    2018-05-01

    Designing thinner, more efficient and cost-effective 2D materials/silicon Schottky photodiodes using the plasmonic concept is one of the most recent quests for the photovoltaic research community. This work demonstrates the enhanced performance of graphene–Si Schottky junction solar cells by introducing asymmetric spheroidal shaped Ag nanoparticles (NPs) embedded in a graphene monolayer (GML). The optical signatures of these Ag NPs (oblate, ortho-oblate, prolate and ortho-prolate) have been analyzed by discrete dipole approximation in terms of extinction efficiency and surface plasmon resonance tunability, against the quasi-static approximation. The spatial field distribution is enhanced by optimizing the size (a eff  =  100 nm) and aspect ratio (0.4) for all of the utilized Ag NPs with an optimized graphene environment (t  =  0.1 nm). An improvement of photon absorption in the thin Si wafer for the polychromatic spectral region (λ ~ 300–1100 nm) under an AM 1.5 G solar spectrum has been observed. This resulted in a photocurrent enhancement from 7.98 mA cm‑2 to 10.0 mA cm‑2 for oblate-shaped NPs integrated into GML/Si Schottky junction solar cells as compared to the bare cell. The structure used in this study to improve the graphene–Si Schottky junction’s performance is also advantageous for other graphene-like 2D material-based Schottky devices.

  3. Effect of swift heavy Kr ions on complex permittivity of silicon PIN diode

    International Nuclear Information System (INIS)

    Li, Yun; Su, Ping; Yang, Zhimei; Ma, Yao; Gong, Min

    2016-01-01

    Highlights: • The complex permittivity has been studied on Si PIN irradiated by heavy Kr ions. • DLTS was used to investigate damages formed in PIN diode during irradiation. • The recombination of carriers has important influence on the complex permittivity. - Abstract: The complex permittivity has been researched on silicon PIN diodes irradiated by 2150 MeV heavy Kr ions in this article. The difference of complex permittivity spectra from 1 to 10^7 Hz between irradiated and unirradiated were observed and discussed. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured at room temperature (300 K) to study the change of electrical properties in diode after irradiation. Deep level transient spectroscopy (DLTS) was used to investigate damages caused by 2150 MeV heavy Kr ions in diode. Two extra electron traps were observed, which were located at E C -0.31 eV and E C -0.17 eV. It indicated that new defects have been formed in PIN diode during irradiation. A comparison of the results illustrated that not only the carrier density but also the recombination of electron-hole pair have important influences on the properties of complex permittivity. These results offer a further indication of the mechanism about the complex permittivity property of semiconductor device, which could help to make the applications for the semiconductor device controlled by electric signals come true in the fields of optoelectronic integrated circuits, plasma antenna and so on.

  4. Characterization of midwave infrared InSb avalanche photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Abautret, J., E-mail: johan.abautret@ies.univ-montp2.fr; Evirgen, A. [Université Montpellier, IES, UMR 5214, F-34095 Montpellier (France); CNRS, IES, UMR 5214, F-34095 Montpellier (France); SOFRADIR, BP 21, 38113 Veurey-Voroize (France); Perez, J. P.; Christol, P. [Université Montpellier, IES, UMR 5214, F-34095 Montpellier (France); CNRS, IES, UMR 5214, F-34095 Montpellier (France); Rothman, J. [CEA-LETI, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Cordat, A. [SOFRADIR, BP 21, 38113 Veurey-Voroize (France)

    2015-06-28

    This paper focuses on the InSb material potential for the elaboration of Avalanche Photodiodes (APD) for high performance infrared imaging applications, both in passive or active mode. The first InSb electron-APD structure was grown by molecular beam epitaxy, processed and electrically characterized. The device performances are at the state of the art for the InSb epi-diode technology, with a dark current density J(−50 mV) = 32 nA/cm{sup 2} at 77 K. Then, a pure electron injection was performed, and an avalanche gain, increasing exponentially, was observed with a gain value near 3 at −4 V at 77 K. The Okuto–Crowell model was used to determine the electron ionization coefficient α(E) in InSb, and the InSb gain behavior is compared with the one of InAs and MCT APDs.

  5. CMOS-based avalanche photodiodes for direct particle detection

    International Nuclear Information System (INIS)

    Stapels, Christopher J.; Squillante, Michael R.; Lawrence, William G.; Augustine, Frank L.; Christian, James F.

    2007-01-01

    Active Pixel Sensors (APSs) in complementary metal-oxide-semiconductor (CMOS) technology are augmenting Charge-Coupled Devices (CCDs) as imaging devices and cameras in some demanding optical imaging applications. Radiation Monitoring Devices are investigating the APS concept for nuclear detection applications and has successfully migrated avalanche photodiode (APD) pixel fabrication to a CMOS environment, creating pixel detectors that can be operated with internal gain as proportional detectors. Amplification of the signal within the diode allows identification of events previously hidden within the readout noise of the electronics. Such devices can be used to read out a scintillation crystal, as in SPECT or PET, and as direct-conversion particle detectors. The charge produced by an ionizing particle in the epitaxial layer is collected by an electric field within the diode in each pixel. The monolithic integration of the readout circuitry with the pixel sensors represents an improved design compared to the current hybrid-detector technology that requires wire or bump bonding. In this work, we investigate designs for CMOS APD detector elements and compare these to typical values for large area devices. We characterize the achievable detector gain and the gain uniformity over the active area. The excess noise in two different pixel structures is compared. The CMOS APD performance is demonstrated by measuring the energy spectra of X-rays from 55 Fe

  6. Laser annealing heals radiation damage in avalanche photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Jin Gyu [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Electrical and Computer Engineering, Waterloo, ON (Canada); Anisimova, Elena; Higgins, Brendon L.; Bourgoin, Jean-Philippe [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Physics and Astronomy, Waterloo, ON (Canada); Jennewein, Thomas [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Physics and Astronomy, Waterloo, ON (Canada); Canadian Institute for Advanced Research, Quantum Information Science Program, Toronto, ON (Canada); Makarov, Vadim [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Electrical and Computer Engineering, Waterloo, ON (Canada); University of Waterloo, Department of Physics and Astronomy, Waterloo, ON (Canada)

    2017-12-15

    Avalanche photodiodes (APDs) are a practical option for space-based quantum communications requiring single-photon detection. However, radiation damage to APDs significantly increases their dark count rates and thus reduces their useful lifetimes in orbit. We show that high-power laser annealing of irradiated APDs of three different models (Excelitas C30902SH, Excelitas SLiK, and Laser Components SAP500S2) heals the radiation damage and several APDs are restored to typical pre-radiation dark count rates. Of nine samples we test, six APDs were thermally annealed in a previous experiment as another solution to mitigate the radiation damage. Laser annealing reduces the dark count rates further in all samples with the maximum dark count rate reduction factor varying between 5.3 and 758 when operating at -80 C. This indicates that laser annealing is a more effective method than thermal annealing. The illumination power to reach these reduction factors ranges from 0.8 to 1.6 W. Other photon detection characteristics, such as photon detection efficiency, timing jitter, and afterpulsing probability, fluctuate but the overall performance of quantum communications should be largely unaffected by these variations. These results herald a promising method to extend the lifetime of a quantum satellite equipped with APDs. (orig.)

  7. Cladding properties under simulated fuel pin transients

    International Nuclear Information System (INIS)

    Hunter, C.W.; Johnson, G.D.

    1975-01-01

    A description is given of the HEDL fuel pin testing program utilizing a recently developed Fuel Cladding Transient Tester (FCTT) to generate the requisite mechanical property information on irradiated and unirradiated fast reactor fuel cladding under temperature ramp conditions. The test procedure is described, and data are presented

  8. Turban pin aspiration: new fashion, new syndrome.

    Science.gov (United States)

    Ilan, Ophir; Eliashar, Ron; Hirshoren, Nir; Hamdan, Kasem; Gross, Menachem

    2012-04-01

    Turban pin aspiration syndrome is a new clinical entity afflicting young Islamic girls wearing a turban.The goal of this study was to present our experience in diagnosis and treatment of this new entity, define its clinical and epidemiologic features, and shed a new light on the role of fashion in the increased incidence. A retrospective study in a tertiary university hospital. Review of clinical parameters and epidemiologic features of 26 patients diagnosed with turban pin aspiration syndrome admitted to the Hadassah-Hebrew University Hospitals in Jerusalem from 1990 to 2010. All patients were Muslim females with an average age of 16 years. In all cases, the history was positive for accidental aspiration. Most of the pins were located in the trachea (42%). In 20 cases, the pins were extracted by rigid bronchoscopy without major complications. Fluoroscopy-assisted rigid bronchoscopy was used successfully in three cases. In one case, the object was self-ejected by coughing before the bronchoscopy, and two patients were referred to the chest unit for thoracotomy. Clinicians should be aware of this distinct form of foreign body aspiration, its method of diagnosis, and extraction techniques. A cultural investigation showed a difference in the turban-fastening technique of young girls as compared with their mothers. Removal by rigid bronchoscopy is a safe method with a high success rate and should be considered as the preferred extraction method of choice. Copyright © 2012 The American Laryngological, Rhinological, and Otological Society, Inc.

  9. Radiographic examination methods for fuel pins

    International Nuclear Information System (INIS)

    Smirnov, V.P.; Dvoretskii, V.G.

    1987-11-01

    To study the fast neutron reactor fuel pins structure the NIIAR Institute used x diffraction, neutronic radiography and autoradiographies. The two first methods are used for internal macrostructure studies, the third method for the plutonium and uranium radial distribution. These methods and the main results are indicated in this document [fr

  10. Physicist pins hopes on particle collider

    CERN Multimedia

    2007-01-01

    Physicist pins hopes on particle collider By Deseret Morning News Published: Monday, Dec. 31, 27 12:4 a.m. MST FONT Scott Thomas, a 187 State University graduate, is working at the frontiers of science. The theoretical physicist is crafting ways to extract fundamental secrets that seem certain to be uncovered by the Large Hadron Collider.

  11. Parameters of the preproduction series SiPMs for the CMS HCAL phase I upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Heering, A., E-mail: Adriaan.Heering@cern.ch [University of Notre Dame, Notre Dame, IN 46556 (United States); Musienko, Yu., E-mail: Iouri.Musienko@cern.ch [University of Notre Dame, Notre Dame, IN 46556 (United States); Institute for Nuclear Research RAS, pr. 60-letiya Oktyabrya 7a, 117312 Moscow (Russian Federation); Ruchti, R.; Wayne, M. [University of Notre Dame, Notre Dame, IN 46556 (United States); Karneyeu, A.; Postoev, V. [Institute for Nuclear Research RAS, pr. 60-letiya Oktyabrya 7a, 117312 Moscow (Russian Federation)

    2016-07-11

    In 2012 the HCAL SiPM photo sensor upgrade was approved for the increased luminosity (5*10{sup 34}) of SLHC. The upgrade will replace the current hybrid photodiodes (HPDs) with multi-pixel Geiger-mode avalanche photodiodes, also known as silicon photomultipliers (SiPMs). A key aspect of the upgrade to SiPMs is to add longitudinal segmentation and improve signal to noise to compensate for scintillator radiation damage. After 5 years of R&D with multiple companies we developed custom large dynamic range SiPMs with large PDE and small ENC. To ensure good mechanical alignment and easy handling of the large number of production channels (>20,000) we have developed a custom ceramic package with a very thin 0.3 mm quartz window with Kyocera. Each package holds 8 channels of SiPMs. Here we report on the final SiPM parameters of the 2014 preproduction run from Hamamatsu (HPK) who has produced a series of 175 arrays with a total of 1400 SiPMs. An overview of our QA results and measurements of the photon detection efficiency, spectral response, crosstalk and cell recovery time will be discussed. - Highlights: • Uniformity of large scale SiPM production. • Small cell size SiPMs with high photo detection efficiency. • Fast recovery time SiPMs. • Custom packaging of SiPMs in High Energy Physics experiments.

  12. Analytical method for reconstruction pin to pin of the nuclear power density distribution

    Energy Technology Data Exchange (ETDEWEB)

    Pessoa, Paulo O.; Silva, Fernando C.; Martinez, Aquilino S., E-mail: ppessoa@con.ufrj.br, E-mail: fernando@con.ufrj.br, E-mail: aquilino@imp.ufrj.br [Coordenacao dos Programas de Pos-Graduacao em Engenharia (COPPE/UFRJ), Rio de Janeiro, RJ (Brazil)

    2013-07-01

    An accurate and efficient method for reconstructing pin to pin of the nuclear power density distribution, involving the analytical solution of the diffusion equation for two-dimensional neutron energy groups in homogeneous nodes, is presented. The boundary conditions used for analytic as solution are the four currents or fluxes on the surface of the node, which are obtained by Nodal Expansion Method (known as NEM) and four fluxes at the vertices of a node calculated using the finite difference method. The analytical solution found is the homogeneous distribution of neutron flux. Detailed distributions pin to pin inside a fuel assembly are estimated by the product of homogeneous flux distribution by local heterogeneous form function. Furthermore, the form functions of flux and power are used. The results obtained with this method have a good accuracy when compared with reference values. (author)

  13. Analytical method for reconstruction pin to pin of the nuclear power density distribution

    International Nuclear Information System (INIS)

    Pessoa, Paulo O.; Silva, Fernando C.; Martinez, Aquilino S.

    2013-01-01

    An accurate and efficient method for reconstructing pin to pin of the nuclear power density distribution, involving the analytical solution of the diffusion equation for two-dimensional neutron energy groups in homogeneous nodes, is presented. The boundary conditions used for analytic as solution are the four currents or fluxes on the surface of the node, which are obtained by Nodal Expansion Method (known as NEM) and four fluxes at the vertices of a node calculated using the finite difference method. The analytical solution found is the homogeneous distribution of neutron flux. Detailed distributions pin to pin inside a fuel assembly are estimated by the product of homogeneous flux distribution by local heterogeneous form function. Furthermore, the form functions of flux and power are used. The results obtained with this method have a good accuracy when compared with reference values. (author)

  14. Pinning control of complex networked systems synchronization, consensus and flocking of networked systems via pinning

    CERN Document Server

    Su, Housheng

    2013-01-01

    Synchronization, consensus and flocking are ubiquitous requirements in networked systems. Pinning Control of Complex Networked Systems investigates these requirements by using the pinning control strategy, which aims to control the whole dynamical network with huge numbers of nodes by imposing controllers for only a fraction of the nodes. As the direct control of every node in a dynamical network with huge numbers of nodes might be impossible or unnecessary, it’s then very important to use the pinning control strategy for the synchronization of complex dynamical networks. The research on pinning control strategy in consensus and flocking of multi-agent systems can not only help us to better understand the mechanisms of natural collective phenomena, but also benefit applications in mobile sensor/robot networks. This book offers a valuable resource for researchers and engineers working in the fields of control theory and control engineering.   Housheng Su is an Associate Professor at the Department of Contro...

  15. PROCOPE, Collision Probability in Pin Clusters and Infinite Rod Lattices

    International Nuclear Information System (INIS)

    Amyot, L.; Daolio, C.; Benoist, P.

    1984-01-01

    1 - Nature of physical problem solved: Calculation of directional collision probabilities in pin clusters and infinite rod lattices. 2 - Method of solution: a) Gauss integration of analytical expressions for collision probabilities. b) alternately, an approximate closed expression (not involving integrals) may be used for pin-to-pin interactions. 3 - Restrictions on the complexity of the problem: number of fuel pins must be smaller than 62; maximum number of groups of symmetry is 300

  16. The Influence of Geometrical Parameters in Socket - Pin Connections on the Value of Opening Force / Wpływ Parametrów Geometrycznych W Połączeniach Typu Gniazdo - Trzpień Na Wartość Siły Otwierającej

    Directory of Open Access Journals (Sweden)

    Sadowski T.

    2015-12-01

    Full Text Available The paper presents an analysis of the influence of a number of technological aspects of both the socket and the pin on the value of the force required for joint disconnection. A number of numerical simulations were made in Abaqus program to examine effects of such parameters as: presence of an interference fit, use of spherical latches, application of different rigidity of the pin by making cuts with variable width and length, use of different angles of inclination of the working part of the connection. Models of different simple joints presented in this work, can also operate in large structures forming panels of aircraft structures. For this purpose one of the analyzed geometry of the connection was applied to create a 3-D panel model of the structural element in CAD - SolidWorks program. All analysed models with different geometries were subjected to simulation of opening process. The corresponding critical forces were estimated for the beginning of the failure process. The detailed discussion of all model parameters was included to specify their influence on the whole disconnection of joints. It should be noted that aerospace structures work under complex loading states and further numerical studies are required to extend the presented results.

  17. Pinning of fullerene lowest unoccupied molecular orbital edge at the interface with standing up copper phthalocyanine

    International Nuclear Information System (INIS)

    Wang, Chenggong; Irfan, Irfan; Turinske, Alexander J.; Gao, Yongli

    2012-01-01

    The electronic structure evolution of interfaces of fullerene (C 60 ) with copper phthalocyanine (CuPc) on highly oriented pyrolitic graphite (HOPG) and on native silicon oxide has been investigated with ultra-violet photoemission spectroscopy and inverse photoemission spectroscopy. The lowest unoccupied molecular orbital edge of C 60 was found to be pinned at the interface with CuPc on SiO 2 . A substantial difference in the electron affinity of CuPc on the two substrates was observed as the orientation of CuPc is lying flat on HOPG and standing up on SiO 2 . The ionization potential and electron affinity of C 60 were not affected by the orientation of CuPc due to the spherical symmetry of C 60 molecules. We observed band bending in C 60 on the standing-up orientation of CuPc molecules, while the energy levels of C 60 on the flat lying orientation of CuPc molecules were observed to be flat. - Highlights: ► Orientation of copper phthalocyanine (CuPc) on ordered graphite and silicon oxide. ► Pinning of lowest unoccupied molecular orbital edge of C60 to the Fermi level on CuPc. ► No C60 pinning or band bending was observed on flat laying CuPc. ► Results are useful for organic photovoltaic and organic light emitting diode research.

  18. Optimization study on pin tip diameter of an impact-pin nozzle at high pressure ratio

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, C. Palani; Lee, Kwon Hee [FMTRC, Daejoo Machinery Co. Ltd., Daegu (Korea, Republic of); Park, Tae Choon; Cha, Bong Jun [Engine Components Research Team, Korea Aerospace Research Institute, Daejeon (Korea, Republic of); Kim, Heuy Dong [Dept. of Mechanical Engineering, Andong National University, Andong (Korea, Republic of)

    2016-09-15

    Wet compression system is typically installed in a gas turbine engine to increase the net power output and efficiency. A crucial component of the wet compression system is the nozzle which generates fine water droplets for injection into the compressor. The main objective of present work is to optimize a kind of nozzle called impact-pin spray nozzle and thereby produce better quality droplets. To achieve this, the dynamics occurring in the water jet impinging on the pin tip, the subsequent formation of water sheet, which finally breaks into water droplets, must be studied. In this manuscript, the progress on the numerical studies on impact-pin nozzle are reported. A small computational domain covering the orifice, pin tip and the region where primary atomization occurs is selected for numerical analysis. The governing equations are selected in three dimensional cartesian form and simulations are performed to predict the dynamics of water jet impinging on the pin. Systematic studies were carried out and the results leading to the choice of turbulence model and the effect of pin tip diameter are reported here. Further studies are proposed to show the future directions of the present research work.

  19. A physico-genetic module for the polarisation of auxin efflux carriers PIN-FORMED (PIN)

    Science.gov (United States)

    Hernández-Hernández, Valeria; Barrio, Rafael A.; Benítez, Mariana; Nakayama, Naomi; Romero-Arias, José Roberto; Villarreal, Carlos

    2018-05-01

    Intracellular polarisation of auxin efflux carriers is crucial for understanding how auxin gradients form in plants. The polarisation dynamics of auxin efflux carriers PIN-FORMED (PIN) depends on both biomechanical forces as well as chemical, molecular and genetic factors. Biomechanical forces have shown to affect the localisation of PIN transporters to the plasma membrane. We propose a physico-genetic module of PIN polarisation that integrates biomechanical, molecular, and cellular processes as well as their non-linear interactions. The module was implemented as a discrete Boolean model and then approximated to a continuous dynamic system, in order to explore the relative contribution of the factors mediating PIN polarisation at the scale of single cell. Our models recovered qualitative behaviours that have been experimentally observed and enable us to predict that, in the context of PIN polarisation, the effects of the mechanical forces can predominate over the activity of molecular factors such as the GTPase ROP6 and the ROP-INTERACTIVE CRIB MOTIF-CONTAINING PROTEIN RIC1.

  20. Primary hip spica with crossed retrograde intramedullary rush pins ...

    African Journals Online (AJOL)

    Bursitis and penetration of pins at the site of Rush pin insertion is a complication associated with this method of treatment. Conclusion: Closed reduction and internal fixation with crossed Rush pins was a superior treatment method in terms of early weight bearing and restoration of normal anatomy. Keywords: Femoral ...

  1. Some aspects of continuum physics used in fuel pin modeling

    International Nuclear Information System (INIS)

    Bard, F.E.

    1975-06-01

    The mathematical formulation used in fuel pin modeling is described. Fuel pin modeling is not a simple extension of the experimental and interpretative methods used in classical mechanics. New concepts are needed to describe materials in a reactor environment. Some aspects of continuum physics used to develop these new constitutive equations for fuel pins are presented. (U.S.)

  2. Post irradiation examination on test fuel pins for PWR

    International Nuclear Information System (INIS)

    Fogaca Filho, N.; Ambrozio Filho, F.

    1981-01-01

    Certain aspects of irradiation technology on test fuel pins for PWR, are studied. The results of post irradiation tests, performed on test fuel pins in hot cells, are presented. The results of the tests permit an evaluation of the effects of irradiation on the fuel and cladding of the pin. (Author) [pt

  3. Temperature and pinning strength dependence of the critical current of a superconductor with a square periodic array of pinning sites

    International Nuclear Information System (INIS)

    Benkraouda, M.; Obaidat, I.M.; Al Khawaja, U.

    2006-01-01

    We have conducted extensive series of molecular dynamic simulations on driven vortex lattices interacting with periodic square arrays of pinning sites. In solving the over damped equation of vortex motion we took into account the vortex-vortex repulsion interaction, the attractive vortex-pinning interaction, and the driving Lorentz force at several values of temperature. We have studied the effect of varying the driving Lorentz force and varying the pinning strength on the critical current for several pinning densities, and temperature values. We have found that the pinning strength play an important role in enhancing the critical current over the whole temperature range. At low temperatures, the critical current was found to increase linearly with increasing the pinning strengths for all pinning densities. As the temperature increases, the effect of small pinning strengths diminishes and becomes insignificant at high temperatures

  4. Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Zakgeim, A. L. [Russian Academy of Sciences, Scientific and Technological Center for Microelectronics (Russian Federation); Il’inskaya, N. D.; Karandashev, S. A.; Lavrov, A. A., E-mail: ioffeled@mail.ru; Matveev, B. A.; Remennyy, M. A.; Stus’, N. M.; Usikova, A. A. [Russian Academy of Sciences, Ioffe Institute (Russian Federation); Cherniakov, A. E. [Russian Academy of Sciences, Scientific and Technological Center for Microelectronics (Russian Federation)

    2017-02-15

    The spatial distribution of equilibrium and nonequilibrium (including luminescent) IR (infrared) radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures (λ{sub max} = 3.4 μm) is measured and analyzed; the structural features of the photodiodes, including the reflective properties of the ohmic contacts, are taken into account. Optical area enhancement due to multiple internal reflection in photodiodes with different geometric characteristics is estimated.

  5. Al{sub 0.2}Ga{sub 0.8}As X-ray photodiodes for X-ray spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Whitaker, M.D.C., E-mail: M.Whitaker@sussex.ac.uk; Lioliou, G.; Butera, S.; Barnett, A.M.

    2016-12-21

    Three custom-made Al{sub 0.2}Ga{sub 0.8}As p-i-n mesa X-ray photodiodes (200 µm diameter, 3 µm i layer) were electrically characterised and investigated for their response to illumination with soft X-rays from an {sup 55}Fe radioisotope X-ray source (Mn Kα = 5.9 keV; Mn Kβ = 6.49 keV). The AlGaAs photodiodes were shown to be suitable for photon counting X-ray spectroscopy at room temperature. When coupled to a custom-made low-noise charge-sensitive preamplifier, a mean energy resolution (as quantified by the full width at half maximum of the 5.9 keV photopeak) of 1.24 keV was measured at room temperature. Parameters such as the depletion width (1.92 µm at 10 V), charge trapping noise (61.7 e{sup −} rms ENC at 5 V, negligible at 10 V) and the electronic noise components (known dielectric noise (63.4 e{sup −} rms), series white noise (27.7 e{sup −} rms), parallel white noise (9.5 e{sup −} rms) and 1/f series noise (2.2 e{sup −} rms) at 10 V reverse bias) affecting the achieved energy resolution were computed. The estimated charge trapping noise and mean energy resolution were compared to similar materials (e.g. Al{sub 0.8}Ga{sub 0.2}As) previously reported, and discussed. These results are the first demonstration of photon counting X-ray spectroscopy with Al{sub 0.2}Ga{sub 0.8}As reported to date.

  6. Development of defects in the structure of PIN dosimetry diodes exposed to gamma radiation

    Energy Technology Data Exchange (ETDEWEB)

    Sopko, V. [Hospital Na Bulovce, Department of Radiological Physics, Budinova 2, CZ-18081 Prague 8 (Czech Republic); Institute of Experimental and Applied Physics, Czech Technical University in Prague, Horska 3a/22, CZ 12800 Prague 2 (Czech Republic); Sopko, B., E-mail: bruno.sopko@cern.ch [Department of Physics, Faculty of Mechanical Engineering, Czech Technical University in Prague, Technicka 4, CZ 16000 Prague 6 (Czech Republic); Faculty of Production Technology and Management, J. E. Purkyně Univerzity in Ústí nad Labem, Na Okraji 1001, 400 01 Ústí nad Labem (Czech Republic); Chren, D. [Department of Physics, Faculty of Mechanical Engineering, Czech Technical University in Prague, Technicka 4, CZ 16000 Prague 6 (Czech Republic); Dammer, J. [Hospital Na Bulovce, Department of Radiological Physics, Budinova 2, CZ-18081 Prague 8 (Czech Republic); Institute of Experimental and Applied Physics, Czech Technical University in Prague, Horska 3a/22, CZ 12800 Prague 2 (Czech Republic); Charles University in Prague, First Faculty of Medicine, Salmovská 1,CZ-12000 Prague 2 (Czech Republic)

    2013-12-01

    Studies of radiation induced defects continue to be relevant as they find an ever greater application due to the increasing radiation doses to which semiconductor detectors are exposed. Efforts of figuring out the changes due to high radiation doses provide the fundamental motivation for this type of experiments. The PIN diode is described, and a developmental disorder caused thereto by 60Co source gamma quanta ranging from 100 kGy to 1 MGy. The calibration curve shows the effect of disturbances on the volt-ampere characteristics as a function of the dose of gamma radiation. The results are compared with earlier published data. Highlights: •We have studied Si PIN diode dosimeters irradiated by gamma. •We measured DLTS spectra and calculated energy traps caused by gamma irradiation. •Increasing dose caused creation of new traps and disappearance of others.

  7. Tribology of silicon-thin-film-coated SiC ceramics and the effects of high energy ion irradiation

    International Nuclear Information System (INIS)

    Kohzaki, Masao; Noda, Shoji; Doi, Harua

    1990-01-01

    The sliding friction coefficients and specific wear of SiC ceramics coated with a silicon thin film (Si/SiC) with and without subsequent Ar + irradiation against a diamond pin were measured with a pin-on-disk tester at room temperature in laboratory air of approximately 50% relative humidity without oil lubrication for 40 h. The friction coefficient of Ar + -irradiated Si/SiC was about 0.05 with a normal load of 9.8 N and remained almost unchanged during the 40 h test, while that of SiC increased from 0.04 to 0.12 during the test. The silicon deposition also reduced the specific wear of SiC to less than one tenth of that of the uncoated SiC. Effectively no wear was detected in Si/SiC irradiated to doses of over 2x10 16 ions cm -2 . (orig.)

  8. Pinning impulsive synchronization of stochastic delayed coupled networks

    International Nuclear Information System (INIS)

    Tang Yang; Fang Jian-An; Wong W K; Miao Qing-Ying

    2011-01-01

    In this paper, the pinning synchronization problem of stochastic delayed complex network (SDCN) is investigated by using a novel hybrid pinning controller. The proposed hybrid pinning controller is composed of adaptive controller and impulsive controller, where the two controllers are both added to a fraction of nodes in the network. Using the Lyapunov stability theory and the novel hybrid pinning controller, some sufficient conditions are derived for the exponential synchronization of such dynamical networks in mean square. Two numerical simulation examples are provided to verify the effectiveness of the proposed approach. The simulation results show that the proposed control scheme has a fast convergence rate compared with the conventional adaptive pinning method. (general)

  9. The pin pixel detector--neutron imaging

    CERN Document Server

    Bateman, J E; Derbyshire, G E; Duxbury, D M; Marsh, A S; Rhodes, N J; Schooneveld, E M; Simmons, J E; Stephenson, R

    2002-01-01

    The development and testing of a neutron gas pixel detector intended for application in neutron diffraction studies is reported. Using standard electrical connector pins as point anodes, the detector is based on a commercial 100 pin connector block. A prototype detector of aperture 25.4 mmx25.4 mm has been fabricated, giving a pixel size of 2.54 mm which matches well to the spatial resolution typically required in a neutron diffractometer. A 2-Dimensional resistive divide readout system has been adapted to permit the imaging properties of the detector to be explored in advance of true pixel readout electronics. The timing properties of the device match well to the requirements of the ISIS-pulsed neutron source.

  10. Elementary pinning force for a superconducting vortex

    International Nuclear Information System (INIS)

    Hyun, O.B.; Finnemore, D.K.; Schwartzkopf, L.; Clem, J.R.

    1987-01-01

    The elementary pinning force f/sub p/ has been measured for a single vortex trapped in one of the superconducting layers of a cross-strip Josephson junction. At temperatures close to the transition temperature the vortex can be pushed across the junction by a transport current. The vortex is found to move in a small number of discrete steps before it exits the junction. The pinning force for each site is found to be asymmetric and to have a value of about 10/sup -6/ N/m at the reduced temperature, t = T/T/sub c/ = 0.95. As a function of temperature, f/sub p/ is found to vary approximately as (1-t)/sup 3/2/. .AE

  11. Top-nozzle mounted replacement guide pin assemblies

    International Nuclear Information System (INIS)

    Gilmore, C.B.; Andrews, W.H.

    1993-01-01

    A replacement guide pin assembly is provided for aligning a nuclear fuel assembly with an upper core plate of a nuclear reactor core. The guide pin assembly includes a guide pin body having a radially expandable base insertable within a hole in the top nozzle, a ferrule insertable within the guide pin base and capable of imparting a radially and outwardly directed force on the expandable base to expand it within the hole of the top nozzle and thereby secure the guide pin body to the top nozzle in response to a predetermined displacement of the ferrule relative to the guide pin body along its longitudinal axis, and a lock screw interfitted with the ferrule and threaded into the guide pin body so as to produce the predetermined displacement of the ferrule. (author)

  12. Performances of photodiode detectors for top and bottom counting detectors of ISS-CREAM experiment

    Energy Technology Data Exchange (ETDEWEB)

    Hyun, H.J. [Kyungpook National University, Daegu 702-701 (Korea, Republic of); Anderson, T. [Pennsylvania State University, University Park, PA 16802 (United States); Angelaszek, D. [University of Maryland, College Park, MD 20740 (United States); Baek, S.J. [Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Copley, M. [University of Maryland, College Park, MD 20740 (United States); Coutu, S. [Pennsylvania State University, University Park, PA 16802 (United States); Han, J.H.; Huh, H.G. [University of Maryland, College Park, MD 20740 (United States); Hwang, Y.S. [Kyungpook National University, Daegu 702-701 (Korea, Republic of); Im, S. [Pennsylvania State University, University Park, PA 16802 (United States); Jeon, H.B.; Kah, D.H.; Kang, K.H.; Kim, H.J. [Kyungpook National University, Daegu 702-701 (Korea, Republic of); Kim, K.C.; Kwashnak, K. [University of Maryland, College Park, MD 20740 (United States); Lee, J. [Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Lee, M.H. [University of Maryland, College Park, MD 20740 (United States); Link, J.T. [NASA GSFC, Greenbelt, MD 20771 (United States); CRESST(USRA), Columbia, MD 21044 (United States); Lutz, L. [University of Maryland, College Park, MD 20740 (United States); and others

    2015-07-01

    The Cosmic Ray Energetics and Mass (CREAM) experiment at the International Space Station (ISS) aims to elucidate the source and acceleration mechanisms of high-energy cosmic rays by measuring the energy spectra from protons to iron. The instrument is planned for launch in 2015 at the ISS, and it comprises a silicon charge detector, a carbon target, top and bottom counting detectors, a calorimeter, and a boronated scintillator detector. The top and bottom counting detectors are developed for separating the electrons from the protons, and each of them comprises a plastic scintillator and a 20×20 silicon photodiode array. Each photodiode is 2.3 cm×2.3 cm in size and exhibits good electrical characteristics. The leakage current is measured to be less than 20 nA/cm{sup 2} at an operating voltage. The signal-to-noise ratio is measured to be better than 70 using commercial electronics, and the radiation hardness is tested using a proton beam. A signal from the photodiode is amplified by VLSI (very-large-scale integration) charge amp/hold circuits, the VA-TA viking chip. Environmental tests are performed using whole assembled photodiode detectors of a flight version. Herein, we present the characteristics of the developed photodiode along with the results of the environmental tests.

  13. Performances of photodiode detectors for top and bottom counting detectors of ISS-CREAM experiment

    International Nuclear Information System (INIS)

    Hyun, H.J.; Anderson, T.; Angelaszek, D.; Baek, S.J.; Copley, M.; Coutu, S.; Han, J.H.; Huh, H.G.; Hwang, Y.S.; Im, S.; Jeon, H.B.; Kah, D.H.; Kang, K.H.; Kim, H.J.; Kim, K.C.; Kwashnak, K.; Lee, J.; Lee, M.H.; Link, J.T.; Lutz, L.

    2015-01-01

    The Cosmic Ray Energetics and Mass (CREAM) experiment at the International Space Station (ISS) aims to elucidate the source and acceleration mechanisms of high-energy cosmic rays by measuring the energy spectra from protons to iron. The instrument is planned for launch in 2015 at the ISS, and it comprises a silicon charge detector, a carbon target, top and bottom counting detectors, a calorimeter, and a boronated scintillator detector. The top and bottom counting detectors are developed for separating the electrons from the protons, and each of them comprises a plastic scintillator and a 20×20 silicon photodiode array. Each photodiode is 2.3 cm×2.3 cm in size and exhibits good electrical characteristics. The leakage current is measured to be less than 20 nA/cm 2 at an operating voltage. The signal-to-noise ratio is measured to be better than 70 using commercial electronics, and the radiation hardness is tested using a proton beam. A signal from the photodiode is amplified by VLSI (very-large-scale integration) charge amp/hold circuits, the VA-TA viking chip. Environmental tests are performed using whole assembled photodiode detectors of a flight version. Herein, we present the characteristics of the developed photodiode along with the results of the environmental tests

  14. On the use of single large-area photodiodes in scintillation counters

    International Nuclear Information System (INIS)

    Morrell, C.

    1989-12-01

    The compilation of this review was originally intended to assess the possibility of using photodiode-based scintillation counters in fluorescence EXAFS (or FLEXAFS) systems as a low-cost alternative to photomultiplier-based counters. The X-ray energies encountered in FLEXAFS experiments range from a few keV to a few tens of keV, and detectors are required to have some energy resolution and/or high count-rate capability in order to optimize the quality of data collected. The results presented in the reviewed literature imply strongly that photodiodes do not compete successfully with photomultipliers in scintillation counting systems for X-ray energies below the order of 100keV, at least at the present stage of photodiode technology. Nevertheless it is likely that there are other applications requiring X-ray detectors for which a photodiode-based scintillation counter may be perfectly adequate, and it is therefore felt that such a review is still useful. In addition, large-area single photodiodes have much to offer as X-ray detectors in their own right, and several of the considerations regarding their use in scintillation counters are highly relevant to this application. (author)

  15. Three hydrogenated amorphous silicon photodiodes stacked for an above integrated circuit colour sensor

    Energy Technology Data Exchange (ETDEWEB)

    Gidon, Pierre; Giffard, Benoit; Moussy, Norbert; Parrein, Pascale; Poupinet, Ludovic [CEA-LETI, MINATEC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)

    2010-03-15

    We present theoretical simulation and experimental results of a new colour pixel structure. This pixel catches the light in three stacked amorphous silicon photodiodes encompassed between transparent electrodes. The optical structure has been simulated for signal optimisation. The thickness of each stacked layer is chosen in order to absorb the maximum of light and the three signals allow to linearly calculate the CIE colour coordinates 1 with minimum error and noise. The whole process is compatible with an above integrated circuit (IC) approach. Each photodiode is an n-i-p structure. For optical reason, the upper diode must be controlled down to 25 nm thickness. The first test pixel structure allows a good recovering of colour coordinates. The measured absorption spectrum of each photodiode is in good agreement with our simulations. This specific stack with three photodiodes per pixel totalises two times more signal than an above IC pixel under a standard Bayer pattern 2,3. In each square of this GretagMacbeth chart is the reference colour on the right and the experimentally measured colour on the left with three amorphous silicon photodiodes per pixel. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  16. Timing analysis of PWR fuel pin failures

    International Nuclear Information System (INIS)

    Jones, K.R.; Wade, N.L.; Katsma, K.R.; Siefken, L.J.; Straka, M.

    1992-09-01

    Research has been conducted to develop and demonstrate a methodology for calculation of the time interval between receipt of the containment isolation signals and the first fuel pin failure for loss-of-coolant accidents (LOCAs). Demonstration calculations were performed for a Babcock and Wilcox (B ampersand W) design (Oconee) and a Westinghouse (W) four-loop design (Seabrook). Sensitivity studies were performed to assess the impacts of fuel pin bumup, axial peaking factor, break size, emergency core cooling system availability, and main coolant pump trip on these times. The analysis was performed using the following codes: FRAPCON-2, for the calculation of steady-state fuel behavior; SCDAP/RELAP5/MOD3 and TRACPF1/MOD1, for the calculation of the transient thermal-hydraulic conditions in the reactor system; and FRAP-T6, for the calculation of transient fuel behavior. In addition to the calculation of fuel pin failure timing, this analysis provides a comparison of the predicted results of SCDAP/RELAP5/MOD3 and TRAC-PFL/MOD1 for large-break LOCA analysis. Using SCDAP/RELAP5/MOD3 thermal-hydraulic data, the shortest time intervals calculated between initiation of containment isolation and fuel pin failure are 10.4 seconds and 19.1 seconds for the B ampersand W and W plants, respectively. Using data generated by TRAC-PF1/MOD1, the shortest intervals are 10.3 seconds and 29.1 seconds for the B ampersand W and W plants, respectively. These intervals are for a double-ended, offset-shear, cold leg break, using the technical specification maximum peaking factor and applied to fuel with maximum design bumup. Using peaking factors commensurate widi actual bumups would result in longer intervals for both reactor designs. This document also contains appendices A through J of this report

  17. Signal amplification and leakage current suppression in amorphous silicon p-i-n diodes by field profile tailoring

    International Nuclear Information System (INIS)

    Hong, W.S.; Zhong, F.; Mireshghi, A.; Perez-Mendez, V.

    1999-01-01

    The performance of amorphous silicon p-i-n diodes as radiation detectors in terms of signal amplitude can be greatly improved when there is a built-in signal gain mechanism. The authors describe an avalanche gain mechanism which is achieved by introducing stacked intrinsic, p-type, and n-type layers into the diode structure. They replaced the intrinsic layer of the conventional p-i-n diode with i 1 -p-i 2 -n-i 3 multilayers. The i 2 layer (typically 1 ∼ 3 microm) achieves an electric field > 10 6 V/cm, while maintaining the p-i interfaces to the metallic contact at electric fields 4 V/cm, when the diode is fully depleted. For use in photo-diode applications the whole structure is less than 10 microm thick. Avalanche gains of 10 ∼ 50 can be obtained when the diode is biased to ∼ 500 V. Also, dividing the electrodes to strips of 2 microm width and 20 microm pitch reduced the leakage current up to an order of magnitude, and increased light transmission without creating inactive regions

  18. SiC/SiC fuel cladding R and D Project 'SCARLET': Status and future plan

    International Nuclear Information System (INIS)

    Kishimoto, Hirotatsu; Kohyama, Akira

    2015-01-01

    This paper provides the recent progress in SiC/SiC development towards early utilisation for LWRs based on NITE method. After the March 11 Disaster in East-Japan, ensuring safe technology for LWR became a top priority R and D in nuclear energy policy of Japan. Along this line, replacement of Zircaloy claddings with SiC/SiC based fuel cladding is becoming one of the most attractive options and a MEXT fund based project, SCARLET, and a METI fund based project have been launched as 5-year termed projects at Muroran Institute of Technology. These projects care for NITE process for making long SiC/SiC fuel pins and connecting technology integration. The SCARLET project also includes coolant compatibility and irradiation effect evaluations as LWR and LMFBR materials. The outline and the present status of the SCARLET project will be briefly introduced in the present paper. (authors)

  19. Performance measurements of hybrid PIN diode arrays

    International Nuclear Information System (INIS)

    Jernigan, J.G.; Arens, J.F.; Collins, T.; Herring, J.; Shapiro, S.L.; Wilburn, C.D.

    1990-05-01

    We report on the successful effort to develop hybrid PIN diode arrays and to demonstrate their potential as components of vertex detectors. Hybrid pixel arrays have been fabricated by the Hughes Aircraft Co. by bump bonding readout chips developed by Hughes to an array of PIN diodes manufactured by Micron Semiconductor Inc. These hybrid pixel arrays were constructed in two configurations. One array format having 10 x 64 pixels, each 120 μm square, and the other format having 256 x 256 pixels, each 30 μm square. In both cases, the thickness of the PIN diode layer is 300 μm. Measurements of detector performance show that excellent position resolution can be achieved by interpolation. By determining the centroid of the charge cloud which spreads charge into a number of neighboring pixels, a spatial resolution of a few microns has been attained. The noise has been measured to be about 300 electrons (rms) at room temperature, as expected from KTC and dark current considerations, yielding a signal-to-noise ratio of about 100 for minimum ionizing particles. 4 refs., 13 figs

  20. Peptidyl-prolyl cis/trans-isomerase A1 (Pin1) is a target for modification by lipid electrophiles.

    Science.gov (United States)

    Aluise, Christopher D; Rose, Kristie; Boiani, Mariana; Reyzer, Michelle L; Manna, Joseph D; Tallman, Keri; Porter, Ned A; Marnett, Lawrence J

    2013-02-18

    Oxidation of membrane phospholipids is associated with inflammation, neurodegenerative disease, and cancer. Oxyradical damage to phospholipids results in the production of reactive aldehydes that adduct proteins and modulate their function. 4-Hydroxynonenal (HNE), a common product of oxidative damage to lipids, adducts proteins at exposed Cys, His, or Lys residues. Here, we demonstrate that peptidyl-prolyl cis/trans-isomerase A1 (Pin1), an enzyme that catalyzes the conversion of the peptide bond of pSer/pThr-Pro moieties in signaling proteins from cis to trans, is highly susceptible to HNE modification. Incubation of purified Pin1 with HNE followed by MALDI-TOF/TOF mass spectrometry resulted in detection of Michael adducts at the active site residues His-157 and Cys-113. Time and concentration dependencies indicate that Cys-113 is the primary site of HNE modification. Pin1 was adducted in MDA-MB-231 breast cancer cells treated with 8-alkynyl-HNE as judged by click chemistry conjugation with biotin followed by streptavidin-based pulldown and Western blotting with anti-Pin1 antibody. Furthermore, orbitrap MS data support the adduction of Cys-113 in the Pin1 active site upon HNE treatment of MDA-MB-231 cells. siRNA knockdown of Pin1 in MDA-MB-231 cells partially protected the cells from HNE-induced toxicity. Recent studies indicate that Pin1 is an important molecular target for the chemopreventive effects of green tea polyphenols. The present study establishes that it is also a target for electrophilic modification by products of lipid peroxidation.

  1. Integrated 1 GHz 4-channel InP phasar based WDM-receiver with Si bipolar frontend array

    NARCIS (Netherlands)

    Steenbergen, C.A.M.; Vreede, de L.C.N.; Dam, van C.; Scholtes, T.L.M.; Smit, M.K.; Tauritz, J.L.; Pedersen, J.W.; Moerman, I.; Verbeek, B.H.; Baets, R.G.F.

    1995-01-01

    An integrated 4-channel WDM-receiver frontend with 1 GHz channel bandwidth is described. The receiver consists of an integrated wavelength demultiplexer with photodiodes in InP technology connected through bond wires with a 4 channel Si bipolar transimpedance amplifier mounted on an epoxy board. The

  2. Miniature probe with semiconductor photodiode for measuring dose rates in radiotherapy

    International Nuclear Information System (INIS)

    Burian, A.

    1991-01-01

    The probe is designed for gaining information on the magnitude and spatial distribution of the dose which will be absorbed by the patient's body during radiotherapy. The probe satisfies requirements of high-level miniaturization and requirements on the shape and tissue-equivalence of the casing, as well as on efficient electromagnetic shielding. It is fitted with a miniature photodiode. Conductive carbon cement was used for attaching contacts to the photodiode. Efficient electromagnetic shielding was achieved by means of a carbon-based conductive layer. The photodiode casing was made from a mixture of organic materials whose biogenic elements approximate the standard soft human tissue. The geometry of the casing is adapted to the particular field of application of the probe. (Z.S). 2 figs

  3. Some n-p (Hg,Cd)Te photodiodes for 8-14 micrometer heterodyne applications

    Science.gov (United States)

    Shanley, J. F.; Flanagan, C. T.

    1980-01-01

    The results describing the dc and CO2 laser heterodyne characteristics of a three element photodiode array and single element and four element photodiode arrays are presented. The measured data shows that the n(+)-p configuration is capable of achieving bandwidths of 475 to 725 MHz and noise equivalent powers of 3.2 x 10 to the minus 20th power W/Hz at 77 K and 1.0 x 10 to the minus 19th power W/Hz at 145 K. The n(+)-n(-)-p photodiodes exhibited wide bandwidths (approximately 2.0 GHz) and fairly good effective heterodyne quantum efficiencies (approximately 13-30 percent at 2.0 GHz). Noise equivalent powers ranging from 1.44 x 10 to the minus 19th power W/Hz to 6.23 x 10 to the minus 20th power W/Hz were measured at 2.0 GHz.

  4. Applicability of the diffusion and simplified P3 theories for BWR pin-by-pin core analysis

    International Nuclear Information System (INIS)

    Tada, Kenichi; Yamamoto, Akio; Kitamura, Yasunori; Yamane, Yoshihiro; Watanabe, Masato; Noda, Hiroshi

    2007-01-01

    The pin-by-pin fine mesh core calculation method is considered as a candidate of next-generation core calculation method for BWR. In this study, the diffusion and the simplified P 3 (SP 3 ) theories are applied to the pin-by-pin core analysis of BWR. Performances of the diffusion and the SP 3 theories for cell-homogeneous pin-by-pin fine mesh BWR core analysis are evaluated through comparison with cell-heterogeneous detailed transport calculation by the method of characteristics (MOC). In this study, two-dimensional, 2x2 multi-assemblies geometry is used to compare the prediction accuracies of the diffusion and the SP 3 theories. The 2x2 multi- assemblies geometry consists of two types of 9x9 UO 2 assembly that have two different enrichment splittings. To mitigate the cell-homogenization error, the SPH method is applied for the pin-by-pin fine mesh calculation. The SPH method is a technique that reproduces a result of heterogeneous calculation by that of homogeneous calculation. The calculation results indicated that diffusion theory shows larger discrepancy than that of SP 3 theory on pin-wise fission rates. Furthermore, the accuracy of the diffusion theory would not be sufficient for the pin-by-pin fine mesh calculation. In contrast to the diffusion theory, the SP 3 theory shows much better accuracy on pin wise fission rates. Therefore, if the SP 3 theory is applied, the accuracy of the pin-by-pin fine mesh BWR core analysis will be higher and will be sufficient for production calculation. (author)

  5. Digital system for acquiring signals from photodiode arrays. No. Program Element 2317-08-03

    International Nuclear Information System (INIS)

    Le Guen, M.; Meric, B.

    1981-01-01

    A model of circuit allowing the digitization and the memorization of signals coming from linear arrays of photodiodes have been realized. The authors first recall the organization and present in the second part some test results on experimental sites. The model consists of 1 - an acquisition, memorization and visualization card (AMV card) for the data from RETICON 121 photodiode strips, 2 - a series transfer card for the memorized data, and 3 - an interface and multiplexing card associated with a system using a 6800 microprocessor allowing the management of eight acquisition cards [fr

  6. Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current.

    Science.gov (United States)

    DeRose, Christopher T; Trotter, Douglas C; Zortman, William A; Starbuck, Andrew L; Fisher, Moz; Watts, Michael R; Davids, Paul S

    2011-12-05

    We present a compact 1.3 × 4 μm2 Germanium waveguide photodiode, integrated in a CMOS compatible silicon photonics process flow. This photodiode has a best-in-class 3 dB cutoff frequency of 45 GHz, responsivity of 0.8 A/W and dark current of 3 nA. The low intrinsic capacitance of this device may enable the elimination of transimpedance amplifiers in future optical data communication receivers, creating ultra low power consumption optical communications.

  7. Compact CsI(Tl)-PIN detectors for nuclear physics applications

    International Nuclear Information System (INIS)

    Bhattacharjee, T.; Basu, S.K.; Bhattacharyya, S.; Chanda, S.; Chowdhury, A.; Mukhopadhyay, P.; Chatterjee, M.B.; Dey, C.C.; Mukherjee, Anjali

    2005-01-01

    Prototype detector elements, based on CsI(Tl) - Si PIN diodes, have been fabricated and optimized for use in a near 4p charged particle multiplicity filter array. The important aspects of fabrication of such compact detector elements along with the off-line and on-line performance test results will be reported. An early implementation of the proposed multiplicity filter array will be described. The planned use of the array in conjunction with the Indian National Gamma Array (INGA) as a reaction filter in high spin spectroscopic studies would be stressed. (author)

  8. Defects influence on short circuit current density in p-i-n silicon solar cell

    International Nuclear Information System (INIS)

    Wagah F Mohamad; Alhan M Mustafa

    2006-01-01

    The admittance analysis method has been used to calculate the collection efficiency and the short circuit current density in a-Si:H p-i-n solar cell, as a function of the thickness of i-layer. Its is evident that the results of the short circuit current can be used to determine the optimal thickness of the i-layer of a cell, and it will be more accurate in comparison with the previous studies using a constant generation rate or an empirical exponential function for the generation of charge carriers throughout the i-layer

  9. Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

    Science.gov (United States)

    Senaratne, C. L.; Wallace, P. M.; Gallagher, J. D.; Sims, P. E.; Kouvetakis, J.; Menéndez, J.

    2016-07-01

    Chemical vapor deposition methods were developed, using stoichiometric reactions of specialty Ge3H8 and SnD4 hydrides, to fabricate Ge1-ySny photodiodes with very high Sn concentrations in the 12%-16% range. A unique aspect of this approach is the compatible reactivity of the compounds at ultra-low temperatures, allowing efficient control and systematic tuning of the alloy composition beyond the direct gap threshold. This crucial property allows the formation of thick supersaturated layers with device-quality material properties. Diodes with composition up to 14% Sn were initially produced on Ge-buffered Si(100) featuring previously optimized n-Ge/i-Ge1-ySny/p-Ge1-zSnz type structures with a single defected interface. The devices exhibited sizable electroluminescence and good rectifying behavior as evidenced by the low dark currents in the I-V measurements. The formation of working diodes with higher Sn content up to 16% Sn was implemented by using more advanced n-Ge1-xSnx/i-Ge1-ySny/p-Ge1-zSnz architectures incorporating Ge1-xSnx intermediate layers (x ˜ 12% Sn) that served to mitigate the lattice mismatch with the Ge platform. This yielded fully coherent diode interfaces devoid of strain relaxation defects. The electrical measurements in this case revealed a sharp increase in reverse-bias dark currents by almost two orders of magnitude, in spite of the comparable crystallinity of the active layers. This observation is attributed to the enhancement of band-to-band tunneling when all the diode layers consist of direct gap materials and thus has implications for the design of light emitting diodes and lasers operating at desirable mid-IR wavelengths. Possible ways to engineer these diode characteristics and improve carrier confinement involve the incorporation of new barrier materials, in particular, ternary Ge1-x-ySixSny alloys. The possibility of achieving type-I structures using binary and ternary alloy combinations is discussed in detail, taking into account

  10. Field profile tailoring in a-Si:H radiation detectors

    International Nuclear Information System (INIS)

    Fujieda, I.; Cho, G.; Conti, M.; Drewery, J.; Kaplan, S.N.; Perez-Mendez, V.; Quershi, S.; Wildermuth, D.; Street, R.A.

    1990-03-01

    The capability of tailoring the field profile in reverse-biased a-Si:H diodes by doping and/or manipulating electrode shapes opens a way to many interesting device structures. Charge collection in a-Si:H radiation detectors is improved for high LET particle detection by inserting thin doped layers into the i-layer of the usual p-i-n diode. This buried p-i-n structure enables us to apply higher reverse-bias and the electric field is enhanced in the mid i-layer. Field profiles of the new structures are calculated and the improved charge collection process is discussed. Also discussed is the possibility of field profile tailoring by utilizing the fixed space charges in i-layers and/or manipulating electrode shapes of the reverse-biased p-i-n diodes. 10 refs., 7 figs

  11. Efficiency enhancement of InGaN/GaN light-emitting diodes with pin-doped GaN quantum barrier

    International Nuclear Information System (INIS)

    Sirkeli, Vadim P; Al-Daffaie, Shihab; Oprea, Ion; Küppers, Franko; Hartnagel, Hans L; Yilmazoglu, Oktay; Ong, Duu Sheng

    2017-01-01

    Blue InGaN/GaN light-emitting diodes with undoped, heavily Si-doped, Si delta-doped, heavily Mg-doped, Mg delta-doped, and Mg–Si pin-doped GaN barrier are investigated numerically. The simulation results demonstrate that the Mg–Si pin-doping in the GaN barrier effectively reduces the polarization-induced electric field between the InGaN well and the GaN barrier in the multiple quantum well, suppresses the quantum-confined Stark effect, and enhances the hole injection and electron confinement in the active region. For this light-emitting diode (LED) device structure, we found that the turn-on voltage is 2.8 V, peak light emission is at 415.3 nm, and internal quantum efficiency is 85.9% at 100 A cm −2 . It is established that the LED device with Mg–Si pin-doping in the GaN barrier has significantly improved efficiency and optical output power performance, and lower efficiency droop up to 400 A cm −2 compared with LED device structures with undoped or Si(Mg)-doped GaN barrier. (paper)

  12. A proposed parameterization of interface discontinuity factors depending on neighborhood for pin-by-pin diffusion computations for LWR

    International Nuclear Information System (INIS)

    Herrero, Jose Javier; Garcia-Herranz, Nuria; Ahnert, Carol

    2011-01-01

    There exists an interest in performing full core pin-by-pin computations for present nuclear reactors. In such type of problems the use of a transport approximation like the diffusion equation requires the introduction of correction parameters. Interface discontinuity factors can improve the diffusion solution to nearly reproduce a transport solution. Nevertheless, calculating accurate pin-by-pin IDF requires the knowledge of the heterogeneous neutron flux distribution, which depends on the boundary conditions of the pin-cell as well as the local variables along the nuclear reactor operation. As a consequence, it is impractical to compute them for each possible configuration. An alternative to generate accurate pin-by-pin interface discontinuity factors is to calculate reference values using zero-net-current boundary conditions and to synthesize afterwards their dependencies on the main neighborhood variables. In such way the factors can be accurately computed during fine-mesh diffusion calculations by correcting the reference values as a function of the actual environment of the pin-cell in the core. In this paper we propose a parameterization of the pin-by-pin interface discontinuity factors allowing the implementation of a cross sections library able to treat the neighborhood effect. First results are presented for typical PWR configurations. (author)

  13. A proposed parameterization of interface discontinuity factors depending on neighborhood for pin-by-pin diffusion computations for LWR

    Energy Technology Data Exchange (ETDEWEB)

    Herrero, Jose Javier; Garcia-Herranz, Nuria; Ahnert, Carol, E-mail: herrero@din.upm.es, E-mail: nuria@din.upm.es, E-mail: carol@din.upm.es [Departamento de Ingenieria Nuclear, Universidad Politecnica de Madrid (Spain)

    2011-07-01

    There exists an interest in performing full core pin-by-pin computations for present nuclear reactors. In such type of problems the use of a transport approximation like the diffusion equation requires the introduction of correction parameters. Interface discontinuity factors can improve the diffusion solution to nearly reproduce a transport solution. Nevertheless, calculating accurate pin-by-pin IDF requires the knowledge of the heterogeneous neutron flux distribution, which depends on the boundary conditions of the pin-cell as well as the local variables along the nuclear reactor operation. As a consequence, it is impractical to compute them for each possible configuration. An alternative to generate accurate pin-by-pin interface discontinuity factors is to calculate reference values using zero-net-current boundary conditions and to synthesize afterwards their dependencies on the main neighborhood variables. In such way the factors can be accurately computed during fine-mesh diffusion calculations by correcting the reference values as a function of the actual environment of the pin-cell in the core. In this paper we propose a parameterization of the pin-by-pin interface discontinuity factors allowing the implementation of a cross sections library able to treat the neighborhood effect. First results are presented for typical PWR configurations. (author)

  14. Genome-wide identification and evolution of the PIN-FORMED (PIN) gene family in Glycine max.

    Science.gov (United States)

    Liu, Yuan; Wei, Haichao

    2017-07-01

    Soybean (Glycine max) is one of the most important crop plants. Wild and cultivated soybean varieties have significant differences worth further investigation, such as plant morphology, seed size, and seed coat development; these characters may be related to auxin biology. The PIN gene family encodes essential transport proteins in cell-to-cell auxin transport, but little research on soybean PIN genes (GmPIN genes) has been done, especially with respect to the evolution and differences between wild and cultivated soybean. In this study, we retrieved 23 GmPIN genes from the latest updated G. max genome database; six GmPIN protein sequences were changed compared with the previous database. Based on the Plant Genome Duplication Database, 18 GmPIN genes have been involved in segment duplication. Three pairs of GmPIN genes arose after the second soybean genome duplication, and six occurred after the first genome duplication. The duplicated GmPIN genes retained similar expression patterns. All the duplicated GmPIN genes experienced purifying selection (K a /K s genome sequence of 17 wild and 14 cultivated soybean varieties. Our research provides useful and comprehensive basic information for understanding GmPIN genes.

  15. Robustness of pinning a general complex dynamical network

    International Nuclear Information System (INIS)

    Wang Lei; Sun Youxian

    2010-01-01

    This Letter studies the robustness problem of pinning a general complex dynamical network toward an assigned synchronous evolution. Several synchronization criteria are presented to guarantee the convergence of the pinning process locally and globally by construction of Lyapunov functions. In particular, if a pinning strategy has been designed for synchronization of a given complex dynamical network, then no matter what uncertainties occur among the pinned nodes, synchronization can still be guaranteed through the pinning. The analytical results show that pinning control has a certain robustness against perturbations on network architecture: adding, deleting and changing the weights of edges. Numerical simulations illustrated by scale-free complex networks verify the theoretical results above-acquired.

  16. Is magnetic pinning a dominant mechanism in Nb-Ti

    International Nuclear Information System (INIS)

    Cooley, L.D.; Lee, P.J.; Larbalestier, D.C.

    1991-01-01

    In this paper, the authors compare the pinning behavior of an artificial pinning center (APC) composite and a nanometer-filament Nb 46.5 wt% Ti composite to that of a conventional Nb 48 wt% Ti composite. The microstructure of the APC composite resembles the conventional composite, where ribbons of normal metal form the pinning centers, whereas the nanometer-filament composite has no internal normal metal but pins instead at the filament surface. The APC composite exhibits much stronger pinning relative to B c 2 than the conventional composite (21.4 GN/m 3 , 7 T vs. 18.9 GN/m 3 , 11 T), which is possibly due to the increased amount of pinning center (50 vol.% vs. 25 vol.%), however the proximity effect reduces the B c 2 unfavorably

  17. Ferromagnetic artificial pinning centers in multifilamentary superconducting wires

    International Nuclear Information System (INIS)

    Wang, J.Q.; Rizzo, N.D.; Prober, D.E.

    1997-01-01

    The authors fabricated multifilamentary NbTi wires with ferromagnetic (FM) artificial pinning centers (APCs) to enhance the critical current density (J c ) in magnetic fields. They used a bundle and draw technique to process the APC wires with either Ni or Fe as the pinning centers. Both wires produced higher J c in the high field range (5-9 T) than previous non-magnetic APC wires similarly processed, even though the authors have not yet optimized pin percentage. Using a magnetometer they found that the pins remained ferromagnetic for the wires with maximum J c . However, they did observe a substantial loss of FM material for the wires where the pin diameter approached 3 nm. Thus, they expect further enhancement of J c with better pin quality

  18. Correlation of creep and swelling with fuel pin performance

    International Nuclear Information System (INIS)

    Jackson, R.J.; Washburn, D.F.; Garner, F.A.; Gilbert, E.R.

    1975-09-01

    The HEDL PNL-11 experiment described was one in a series of fueled subassemblies irradiated in EBR-II to demonstrate the adequacy of the FFTF fuel pin design. The cladding material, dimensions, and fuel density are prototypic of FFTF. Because neutron flux in EBR-II is lower than in FFTF, the uranium enrichment is higher in these experimental fuel pins, irradiated in EBR-II, than the FFTF enrichment for comparable linear heat rates. Some pertinent oprating conditions for the center fuel pin in this experiment are listed. This 37-pin subassembly represents, at 110,000 MWd/MTM, the highest burnup yet attained by a prototypic FFTF subassembly. Similarly, this is the highest fluence presently attained by prototypic fuel pins. A cladding breach occurred in one fuel pin which is presently being examined. Results are presented and discussed

  19. Analysis of three idealized reactor configurations: plate, pin, and homogeneous

    International Nuclear Information System (INIS)

    McKnight, R.D.

    1983-01-01

    Detailed Monte Carlo calculations have been performed for three distinct configurations of an idealized fast critical assembly. This idealized assembly was based on the LMFBR benchmark critical assembly ZPR-6/7. In the first configuration, the entire core was loaded with the plate unit cell of ZPR-6/7. In the second configuration, the entire core was loaded with the ZPR sodium-filled pin calandria. The actual ZPR pin calandria are loaded with mixed (U,Pu) oxide pins which closely match the composition of the ZPR-6/7 plate unit cell. For the present study, slight adjustments were made in the atom concentrations and the length of the pin calandria in order to make the core boundaries and average composition for the pin-cell configuration identical to those of the plate-cell configuration. In the third configuration, the core was homogeneous, again with identical core boundaries and average composition as the plate and pin configurations

  20. Enhancement of the Si p-n diode NIR photoresponse by embedding β-FeSi2 nanocrystallites.

    Science.gov (United States)

    Shevlyagin, A V; Goroshko, D L; Chusovitin, E A; Galkin, K N; Galkin, N G; Gutakovskii, A K

    2015-10-05

    By using solid phase epitaxy of thin Fe films and molecular beam epitaxy of Si, a p(+)-Si/p-Si/β-FeSi2 nanocrystallites/n-Si(111) diode structure was fabricated. Transmission electron microscopy data confirmed a well-defined multilayered structure with embedded nanocrystallites of two typical sizes: 3-4 and 15-20 nm, and almost coherent epitaxy of the nanocrystallites with the Si matrix. The diode at zero bias conditions exhibited a current responsivity of 1.7 mA/W, an external quantum efficiency of about 0.2%, and a specific detectivity of 1.2 × 10(9) cm × Hz(1/2)/W at a wavelength of 1300 nm at room temperature. In the avalanche mode, the responsivity reached up to 20 mA/W (2% in terms of efficiency) with a value of avalanche gain equal to 5. The data obtained indicate that embedding of β-FeSi2 nanocrystallites into the depletion region of the Si p-n junction results in expansion of the spectral sensitivity up to 1600 nm and an increase of the photoresponse by more than two orders of magnitude in comparison with a conventional Si p-n junction. Thereby, fabricated structure combines advantage of the silicon photodiode functionality and simplicity with near infrared light detection capability of β-FeSi2.

  1. Analytic models for fuel pin transient performance

    International Nuclear Information System (INIS)

    Bard, F.E.; Fox, G.L.; Washburn, D.F.; Hanson, J.E.

    1976-09-01

    HEDL's ability to analyze various mechanisms that operate within a fuel pin has progressed substantially through development of codes such as PECTCLAD, which solves cladding response, and DSTRESS, which solves fuel response. The PECTCLAD results show good correlation with a variety of mechanical tests on cladding material and also demonstrate the significance of cladding strength when applying the life fraction rule. The DSTRESS results have shown that fuel deforms sufficiently during overpower transient tests that available volumes are filled, whether in the form of a central cavity or start-up cracks

  2. Optimum Prestress of Tanks with Pinned Base

    DEFF Research Database (Denmark)

    Brøndum-Nielsen, Troels

    1998-01-01

    Amin Ghali and Eleanor Elliott presented in their paper an interesting suggestion for prestressing of circular tanks without sliding joints. For many prestressed tanks the following construction procedure is adopted:In order to ensure compressive hoop forces in the wall near the base, the wall...... is allowed to slide freely in the radial direction during tensioning (free base).After tensioning such displacements are prevented (pinned base). The present paper addresses the problem of prestress of such tanks.Keywords: circular prestressing; creep properties; prestressed concrete; redistribution...

  3. On the obstructions to non-Cliffordian pin structures

    Energy Technology Data Exchange (ETDEWEB)

    Chamblin, A. (Dept. of Applied Maths and Theoretical Physics, Univ. of Cambridge (United Kingdom))

    1994-07-01

    We derive the topological obstructions to the existence of non-Cliffordian pin structures on four-dimensional spacetimes. We apply these obstructions to the study of non-Cliffordian pin-Lorentz cobordism. We note that our method of derivation applies equally well in any dimension and in any signature, and we present a general format for calculating obstructions in these situations. Finally, we interpret the breakdown of pin structure and discuss the relevance of this to aspects of physics. (orig.)

  4. Sodium erosion of boron carbide from breached absorber pins

    International Nuclear Information System (INIS)

    Basmajian, J.A.; Baker, D.E.

    1981-03-01

    The purpose of the irradiation experiment was to provide an engineering demonstration of the irradiation behavior of breached boron carbide absorber pins. By building defects into the cladding of prototypic absorber pins, and performing the irradiation under typical FFTF operating conditions, a qualitative assessment of the consequences of a breach was achieved. Additionally, a direct comparison of pin behavior with that of the ex-reactor test could be made

  5. Comparison of proton microbeam and gamma irradiation for the radiation hardness testing of silicon PIN diodes

    Science.gov (United States)

    Jakšić, M.; Grilj, V.; Skukan, N.; Majer, M.; Jung, H. K.; Kim, J. Y.; Lee, N. H.

    2013-09-01

    Simple and cost-effective solutions using Si PIN diodes as detectors are presently utilized in various radiation-related applications in which excessive exposure to radiation degrades their charge transport properties. One of the conventional methods for the radiation hardness testing of such devices is time-consuming irradiation with electron beam or gamma-ray irradiation facilities, high-energy proton accelerators, or with neutrons from research reactors. Recently, for the purpose of radiation hardness testing, a much faster nuclear microprobe based approach utilizing proton irradiation has been developed. To compare the two different irradiation techniques, silicon PIN diodes have been irradiated with a Co-60 gamma radiation source and with a 6 MeV proton microbeam. The signal degradation in the silicon PIN diodes for both irradiation conditions has been probed by the IBIC (ion beam induced charge) technique, which can precisely monitor changes in charge collection efficiency. The results presented are reviewed on the basis of displacement damage calculations and NIEL (non-ionizing energy loss) concept.

  6. Cell homogenization methods for pin-by-pin core calculations tested in slab geometry

    International Nuclear Information System (INIS)

    Yamamoto, Akio; Kitamura, Yasunori; Yamane, Yoshihiro

    2004-01-01

    In this paper, performances of spatial homogenization methods for fuel or non-fuel cells are compared in slab geometry in order to facilitate pin-by-pin core calculations. Since the spatial homogenization methods were mainly developed for fuel assemblies, systematic study of their performance for the cell-level homogenization has not been carried out. Importance of cell-level homogenization is recently increasing since the pin-by-pin mesh core calculation in actual three-dimensional geometry, which is less approximate approach than current advanced nodal method, is getting feasible. Four homogenization methods were investigated in this paper; the flux-volume weighting, the generalized equivalence theory, the superhomogenization (SPH) method and the nonlinear iteration method. The last one, the nonlinear iteration method, was tested as the homogenization method for the first time. The calculations were carried out in simplified colorset assembly configurations of PWR, which are simulated by slab geometries, and homogenization performances were evaluated through comparison with the reference cell-heterogeneous calculations. The calculation results revealed that the generalized equivalence theory showed best performance. Though the nonlinear iteration method can significantly reduce homogenization error, its performance was not as good as that of the generalized equivalence theory. Through comparison of the results obtained by the generalized equivalence theory and the superhomogenization method, important byproduct was obtained; deficiency of the current superhomogenization method, which could be improved by incorporating the 'cell-level discontinuity factor between assemblies', was clarified

  7. Development of 3D pseudo pin-by-pin calculation methodology in ANC

    International Nuclear Information System (INIS)

    Zhang, B.; Mayhue, L.; Huria, H.; Ivanov, B.

    2012-01-01

    Advanced cores and fuel assembly designs have been developed to improve operational flexibility, economic performance and further enhance safety features of nuclear power plants. The simulation of these new designs, along with strong heterogeneous fuel loading, have brought new challenges to the reactor physics methodologies currently employed in the industrial codes for core analyses. Control rod insertion during normal operation is one operational feature in the AP1000 R plant of Westinghouse next generation Pressurized Water Reactor (PWR) design. This design improves its operational flexibility and efficiency but significantly challenges the conventional reactor physics methods, especially in pin power calculations. The mixture loading of fuel assemblies with significant neutron spectrums causes a strong interaction between different fuel assembly types that is not fully captured with the current core design codes. To overcome the weaknesses of the conventional methods, Westinghouse has developed a state-of-the-art 3D Pin-by-Pin Calculation Methodology (P3C) and successfully implemented in the Westinghouse core design code ANC. The new methodology has been qualified and licensed for pin power prediction. The 3D P3C methodology along with its application and validation will be discussed in the paper. (authors)

  8. The influence of Si on the superconducting properties of LiFeAs single crystals

    International Nuclear Information System (INIS)

    Shlyk, L; Bischoff, M; Niewa, R

    2012-01-01

    The results of Si doping on the superconducting transition temperature, critical current density, irreversibility field, upper critical field, coherence length and magnetic relaxation of LiFeAs single crystals are reported for H ∥ c. The superconducting transition temperature of the Si doped sample decreases by about of 6.4 K/at.%, which is likely due to the pair breaking effect. The presence of a secondary high-field fishtail maximum, which shifts progressively with temperature, is associated with the extrinsic pinning centers created by Si. The increase of the critical current densities in intermediate magnetic fields of about three times as compared to our undoped material indicates that very small amounts of Si act as effective pinning sites for the flux pinning enhancement in the material. Pinning force curves measured at different temperatures obey a normalized form of Kramer’s law, which indicates that the critical current density is limited by one predominant flux pinning mechanism. Analysis of the temperature and field dependences of the magnetic relaxation is consistent with the collective pinning model. The magnetic relaxation measurements combined with the peak position of the critical current density in the B–T phase diagram suggest an elastic–plastic transition of the vortex lattice at higher temperatures and fields. (paper)

  9. Trending on Pinterest: an examination of pins about skin tanning.

    Science.gov (United States)

    Banerjee, Smita C; Rodríguez, Vivian M; Greene, Kathryn; Hay, Jennifer L

    2018-04-10

    Rates of melanoma and nonmelanoma skin cancers are on the rise in the USA with data revealing disproportionate increase in female young adults. The popularity of intentional skin tanning among U.S. adolescents is attributed to several factors, including prioritization of physical appearance, media images of tanned celebrities, ease of availability of artificial tanning facilities, and more recently, the prevalence and celebration of tanned skin on social media. Pinterest, as the third most popular social media platform, was searched for "pins" about skin tanning. The resultant "pins" were examined to understand the extent and characteristics of skin tanning portrayed on Pinterest. We analyzed pins on Pinterest about skin tanning (n = 501) through a quantitative content analysis. Overall, results indicated an overwhelmingly protanning characteristic of pins about skin tanning on Pinterest, with over 85% of pins promoting tanning behavior. The pins were generally characterized by the portrayal of a female subject (61%) and provided positive reinforcement for tanning (49%). Use of tanning for enhancing appearance was the main positive outcome expectancy portrayed in the pins (35%), and nudity or exposure of skin on arms (32%) and legs (31%) was evident in about a third of pins. With overwhelmingly positive pins promoting tanning, use of female subjects, exhibiting nudity, and appearance enhancement, there seems be to a consistent targeting of female users to accept tanning as a socially acceptable and popular behavior. The findings indicate a need for developing sun protection messages and the leveraging of social media for dissemination of skin cancer prevention and detection messages.

  10. The pin pixel detector--X-ray imaging

    CERN Document Server

    Bateman, J E; Derbyshire, G E; Duxbury, D M; Marsh, A S; Simmons, J E; Stephenson, R

    2002-01-01

    The development and testing of a soft X-ray gas pixel detector, which uses connector pins for the anodes is reported. Based on a commercial 100 pin connector block, a prototype detector of aperture 25.4 mm centre dot 25.4 mm can be economically fabricated. The individual pin anodes all show the expected characteristics of small gas detectors capable of counting rates reaching 1 MHz per pin. A 2-dimensional resistive divide readout system has been developed to permit the imaging properties of the detector to be explored in advance of true pixel readout electronics.

  11. Reconstruction calculation of pin power for ship reactor core

    International Nuclear Information System (INIS)

    Li Haofeng; Shang Xueli; Chen Wenzhen; Wang Qiao

    2010-01-01

    Aiming at the limitation of the software that pin power distribution for ship reactor core was unavailable, the calculation model and method of the axial and radial pin power distribution were proposed. Reconstruction calculations of pin power along axis and radius was carried out by bicubic and bilinear interpolation and cubic spline interpolation, respectively. The results were compared with those obtained by professional reactor physical soft with fine mesh difference. It is shown that our reconstruction calculation of pin power is simple and reliable as well as accurate, which provides an important theoretic base for the safety analysis and operating administration of the ship nuclear reactor. (authors)

  12. Vortex pinning landscape in MOD-TFA YBCO nanostroctured films

    Science.gov (United States)

    Gutierrez, J.; Puig, T.; Pomar, A.; Obradors, X.

    2008-03-01

    A methodology of general validity to study vortex pinning in YBCO based on Jc transport measurements is described. It permits to identify, separate and quantify three basic vortex pinning contributions associated to anisotropic-strong, isotropic-strong and isotropic-weak pinning centers. Thereof, the corresponding vortex pinning phase diagrams are built up. This methodology is applied to the new solution-derived YBCO nanostructured films, including controlled interfacial pinning by the growth of nanostructured templates by means of self-assembled processes [1] and YBCO-BaZrO3 nanocomposites prepared by modified solution precursors. The application of the methodology and comparison with a standard solution-derived YBCO film [2], enables us to identify the nature and the effect of the additional pinning centers induced. The nanostructured templates films show c-axis pinning strongly increased, controlling most of the pinning phase diagram. On the other hand, the nanocomposites have achieved so far, the highest pinning properties in HTc-superconductors [3], being the isotropic-strong defects contribution the origin of their unique properties. [1] M. Gibert et al, Adv. Mat. vol 19, p. 3937 (2007) [2] Puig.T et al, SuST EUCAS 2007 (to be published) [3] J. Gutierrez et al, Nat. Mat. vol. 6, p. 367 (2007) * Work supported by HIPERCHEM, NANOARTIS and MAT2005-02047

  13. ITP Hanford Type 40 pin electrical connector failure analysis

    International Nuclear Information System (INIS)

    Imrich, K.J.

    1993-01-01

    Corrosion products observed on the ITP Hanford Type 40 pin electrical connectors would be expected to adversely affect the power and control signals supplied to process equipment in the filter cell by the connectors. Corrosion products were consistent with those found on similar pins in DWPF. The recommendations based on the findings in this investigation are as follows: (1) Replace male and female rhodium plated pins with gold plated pins. (2) Replace the galvanized carbon steel spring on the male connector with a stainless steel spring. (3) Install protective caps over Hanford connectors when jumpers are removed

  14. Fuel-pin cladding transient failure strain criterion

    International Nuclear Information System (INIS)

    Bard, F.E.; Duncan, D.R.; Hunter, C.W.

    1983-01-01

    A criterion for cladding failure based on accumulated strain was developed for mixed uranium-plutonium oxide fuel pins and used to interpret the calculated strain results from failed transient fuel pin experiments conducted in the Transient Reactor Test (TREAT) facility. The new STRAIN criterion replaced a stress-based criterion that depends on the DORN parameter and that incorrectly predicted fuel pin failure for transient tested fuel pins. This paper describes the STRAIN criterion and compares its prediction with those of the stress-based criterion

  15. Dynamic Phases of Vortices in Superconductors with Periodic Pinning

    International Nuclear Information System (INIS)

    Reichhardt, C.; Olson, C.; Nori, F.

    1997-01-01

    We present results from extensive simulations of driven vortex lattices interacting with periodic arrays of pinning sites. Changing an applied driving force produces a rich variety of novel dynamical plastic flow phases which are very distinct from those observed in systems with random pinning arrays. Signatures of the transition between these different dynamical phases include sudden jumps in the current-voltage curves as well as marked changes in the vortex trajectories and vortex lattice order. Several dynamical phase diagrams are obtained as a function of commensurability, pinning strength, and spatial order of the pinning sites. copyright 1997 The American Physical Society

  16. Positioning and locking device for fuel pin to grid attachment

    International Nuclear Information System (INIS)

    Frick, T.M.; Wineman, A.L.

    1976-01-01

    A positioning and locking device for fuel pin to grid attachment provides an inexpensive means of positively positioning and locking the individual fuel pins which make up the driver fuel assemblies used in nuclear reactors. The device can be adapted for use with a currently used attachment grid assembly design and insures that the pins remain in their proper position throughout the in-reactor life of the assembly. This device also simplifies fuel bundle assembly in that a complete row of fuel pins can be added to the bundle during each step of assembly. 8 claims, 8 drawing figures

  17. Heat transfer in a fuel pin shipping container

    International Nuclear Information System (INIS)

    Ingham, J.G.

    1980-01-01

    Maximum cladding temperatures occur when the IDENT 1578 fuel pin shipping container is installed in the T-3 Cask. The maximum allowable cladding temperature of 800 0 F is reached when the rate of energy deposited in the 19-pin basket reaches 400 watts. Since 45% of the energy which is generated in the fuel escapes the 19-pin basket without being deposited, mostly gamma energy, the maximum allowable rate of heat generation is 400/.55 = 727 watts. Similarly, the maximum allowable cladding temperature of 800 0 F is reached when the rate of energy deposited in the 40-pin basket reaches 465 watts. Since 33% of the energy which is generated in the fuel escapes the 40-pin basket without being deposited, mostly gamma energy, the maximum allowable rate of heat generation is 465/.66 = 704 watts. The IDENT 1578 fuel pin shipping container therefore meets its thermal design criteria. IDENT 1578 can handle fuel pins with a decay heat load of 600 watts while maintaining the maximum fuel pin cladding temperature below 800 0 F. The emissivities which were determined from the test results for the basket tubes and container are relatively low and correspond to new, shiny conditions. As the IDENT 1578 container is exposed to high temperatures for extended periods of time during the transportation of fuel pins, the emissivities will probably increase. This will result in reduced temperatures

  18. Nano-engineered pinning centres in YBCO superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Crisan, A., E-mail: adrian.crisan@infim.ro [National Institute for Materials Physics Bucharest, 105 bis Atomistilor Str., 077125 Magurele (Romania); School of Metallurgy and Materials, University of Birmingham, Edgbaston, B15 2TT Birmingham (United Kingdom); Dang, V.S. [School of Metallurgy and Materials, University of Birmingham, Edgbaston, B15 2TT Birmingham (United Kingdom); Nano and Energy Center, VNU Hanoi University of Science, 334 Nguyen Trai, Thanh Xuan, Hanoi (Viet Nam); Mikheenko, P. [School of Metallurgy and Materials, University of Birmingham, Edgbaston, B15 2TT Birmingham (United Kingdom); Department of Physics, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo (Norway)

    2017-02-15

    Highlights: • Power applications of YBCO films/coated conductors in technological relevant magnetic fields requires nano-engineered pinning centre. • Three approaches have been proposed: substrate decoration, quasi-multilayers, and targets with secondary phase nano-inclusions. • Combination of all three approaches greatly increased critical current in YBCO films. • Bulk pinning force, pinning potential, and critical current density are estimated and discussed in relation with the type and strength of pinning centres related to the defects evidenced by Transmission Electron Microscopy. - Abstract: For practical applications of superconducting materials in applied magnetic fields, artificial pinning centres in addition to natural ones are required to oppose the Lorentz force. These pinning centres are actually various types of defects in the superconductor matrix. The pinning centres can be categorised on their dimension (volume, surface or point) and on their character (normal cores or Δκ cores). Different samples have been produced by Pulsed Laser Deposition, with various thicknesses, temperatures and nanostructured additions to the superconducting matrix. They have been characterized by SQUID Magnetic Properties Measurement System and Physical Properties Measurement System, as well as by Transmission Electron Microscopy (TEM). Correlations between pinning architecture, TEM images, and critical currents at various fields and field orientations will be shown for a large number of YBa{sub 2}Cu{sub 3}O{sub x} films with various types and architectures of artificial pinning centres.

  19. Prototype for the measurement of parameters in the Mammography Unity using photodiodes; Prototipo para la medicion de parametros en una Unidad de Mamografia utilizando fotodiodos

    Energy Technology Data Exchange (ETDEWEB)

    Mercado H, I.; Ramirez J, F.J.; Tovar M, V.; Becerril V, A. [Instituto Nacional de Investigaciones Nucleares, Salazar, Estado de Mexico C.P. 52045 (Mexico)

    1999-07-01

    It has been developed a prototype which makes possible to measure the kilo voltage applied to the X-ray tube, the exposure time of the radiation beam and the yield expressed in kerma in air K a (mGy/m As) o a mammography unit. The instrument consists of a radiation detector, an acquisition circuit, a stage of analogical processing of the signal connected to an analogic-digital converter and a display system of the results. The detection section is composed by a pair of photodiodes PIN type in which to do make the measurement of kilo voltage one of them is covered by an aluminium filter (Al) and the other one by a molybdenum filter (Mo). The measurements were done in a mammography unit which possess a generator of high frequency, with a molybdenum anode, a window 8 mm Beryllium (Be) and an additional filtration of 30 {mu} m Mo. The measurements obtained were compared with commercial instruments finding maximum variations of 2 % of value obtained. This prototype has been developed with the idea to obtain in a future a commercial instrument, for be used mainly in the hospitable institutions as an auxiliary tool in the Quality assurance programs in radiodiagnostic. (Author)

  20. FABRICE process for the refrabrication of experimental pins in a hot cell, from pins pre-irradiated in power reactors

    International Nuclear Information System (INIS)

    Vignesoult, N.; Atabek, R.; Ducas, S.

    1982-06-01

    The Fabrice ''hot cell refabrication'' process for small pins from very long irradiated fuel elements was developed at the CEA to allow parametric studies of the irradiation behavior of pins from nuclear power plants. Since this operation required complete assurance of the validity of the process, qualification of the fabrication was performed on test pins, refabricated in the hot cell, as well as irradiation qualification. The latter qualification was intended to demonstrate that, in identical experimental irradiation conditions, the refabricated Fabrice pins behaved in the same way as whole pins with the same initial characteristics. This qualification of the Fabrice process, dealing with more than twenty pins at different burnups, showed that fabrication did not alter: the inherent characteristics of the sampled fuel element and the irradiation behavior of the sampled fuel element [fr

  1. Two-dimensional position sensitive silicon photodiode as a charged particle detector

    International Nuclear Information System (INIS)

    Kovacevic, K.; Zadro, M.

    1999-01-01

    A two-dimensional position sensitive silicon photodiode has been tested for measurement of position and energy of charged particles. Position nonlinearity and resolution, as well as energy resolution and ballistic deficit were measured for 5.486 MeV α-particles. The results obtained for different pulse shaping time constants are presented

  2. Microprocessor system to recover data from a self-scanning photodiode array

    International Nuclear Information System (INIS)

    Koppel, L.N.; Gadd, T.J.

    1975-01-01

    A microprocessor system developed at Lawrence Livermore Laboratory has expedited the recovery of data describing the low energy x-ray spectra radiated by laser-fusion targets. An Intel microprocessor controls the digitization and scanning of the data stream of an x-ray-sensitive self-scanning photodiode array incorporated in a crystal diffraction spectrometer

  3. A Prototype RICH Detector Using Multi-Anode Photo Multiplier Tubes and Hybrid Photo-Diodes

    CERN Document Server

    Albrecht, E; Bibby, J H; Brook, N H; Doucas, G; Duane, A; Easo, S; Eklund, L; French, M; Gibson, V; Gys, Thierry; Halley, A W; Harnew, N; John, M; Piedigrossi, D; Rademacker, J; Simmons, B; Smale, N J; Teixeira-Dias, P; Toudup, L W; Websdale, David M; Wilkinson, G R; Wotton, S A

    2001-01-01

    The performance of a prototype Ring Imaging Cherenkov Detector is studied using a charged particle beam. The detector performance, using CF4 and air as radiators, is described. Cherenkov angle precision and photoelectron yield using hybrid photo-diodes and multi-anode PMTs agree with simulations and are assessed in terms of the requirements of the LHCb experiment.

  4. Scintillation detector composed by new type of avalanche photodiode and CsI(Tl) crystal

    International Nuclear Information System (INIS)

    He Jingtang; Chen Duanbao; Li Zuhao; Mao Yufang; Dong Xiaoli

    1996-01-01

    Using S5345 type of avalanche photodiode produced by Hamamatsu for the CsI(Tl) crystal readout, the spectrum of γ ray were measured. Energy resolution of 6.8% for 1.27 MeV γ ray from 22 Na source was obtained. The relation between energy resolution and coupling area, dimension of crystal, shaping time and bias were measured

  5. Study on the property of the avalanche photodiode as the readout component for scintillation crystals

    International Nuclear Information System (INIS)

    He Jingtang; Chen Duanbao; Zhu Guoyi; Mao Yufang; Dong Xiaoli; Li Zuhao

    1996-01-01

    The new avalanche photodiode (APD) and a CsI(Tl) crystal formed a scintillation detector. The energy spectrum of γ rays was measured by this detector. The measured results were compared with that measured by photomultiplier. Our plan is to use APD as PbWO 4 readout component for forward luminosity electromagnetic calorimeter at τ-C factory

  6. Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits.

    Science.gov (United States)

    Aull, Brian

    2016-04-08

    This article reviews MIT Lincoln Laboratory's work over the past 20 years to develop photon-sensitive image sensors based on arrays of silicon Geiger-mode avalanche photodiodes. Integration of these detectors to all-digital CMOS readout circuits enable exquisitely sensitive solid-state imagers for lidar, wavefront sensing, and passive imaging.

  7. Using the combination CsI(Tl) + photodiode for identification and energy measurement of light particles

    International Nuclear Information System (INIS)

    Guinet, D.; Chambon, B.; Cheynis, B.; Demeyer, A.; Drain, D.; Hu, X.C.; Pastor, C.; Vagneron, L.; Zaid, K.; Giorni, A.; Heuer, D.; Lleres, A.; Viano, J.B.

    1989-01-01

    The feasibility of discriminating light charged particles in charge and mass using the CsI(Tl) + photodiode combination is demonstrated. Experiment layout and results for a test using a beam of 30 MeV/nucleon α particles impinging on self-supporting gold and aluminium targets are shown

  8. HPLC-photodiode array detection analysis of curcuminoids in Curcuma species indigenous to Indonesia

    NARCIS (Netherlands)

    Bos, Rein; Windono, Tri; Woerdenbag, Herman J.; Boersma, Ykelien L.; Koulman, Albert; Kayser, Oliver

    An optimized HPLC method with photodiode array detection was developed and applied to analyse the curcuminoids curcumin, demethoxycurcumin, and bis-demethoxycurcumin in rhizomes of Curcuma mangga Val &. v. Zijp, C. heyneana Val. & v. Zijp, C. aeruginosa Roxb. and C. soloensis Val. (Zingiberaceae),

  9. Charge-Separation Dynamics in Inorganic-Organic Ternary Blends for Efficient Infrared Photodiodes

    NARCIS (Netherlands)

    Jarzab, Dorota; Szendrei, Krisztina; Yarema, Maksym; Pichler, Stefan; Heiss, Wolfgang; Loi, Maria A.

    2011-01-01

    Knowledge about the working mechanism of the PbS:P3HT:PCBM [P3HT=poly(3-hexylthiophene), PCBM=[6,6]-phenyl-C(61) -butyric acid methyl ester] hybrid blend used for efficient near-infrared photodiodes is obtained from time-resolved photoluminescence (PL) studies. To understand the role of each

  10. Photodiode area effect on performance of X-ray CMOS active pixel sensors

    Science.gov (United States)

    Kim, M. S.; Kim, Y.; Kim, G.; Lim, K. T.; Cho, G.; Kim, D.

    2018-02-01

    Compared to conventional TFT-based X-ray imaging devices, CMOS-based X-ray imaging sensors are considered next generation because they can be manufactured in very small pixel pitches and can acquire high-speed images. In addition, CMOS-based sensors have the advantage of integration of various functional circuits within the sensor. The image quality can also be improved by the high fill-factor in large pixels. If the size of the subject is small, the size of the pixel must be reduced as a consequence. In addition, the fill factor must be reduced to aggregate various functional circuits within the pixel. In this study, 3T-APS (active pixel sensor) with photodiodes of four different sizes were fabricated and evaluated. It is well known that a larger photodiode leads to improved overall performance. Nonetheless, if the size of the photodiode is > 1000 μm2, the degree to which the sensor performance increases as the photodiode size increases, is reduced. As a result, considering the fill factor, pixel-pitch > 32 μm is not necessary to achieve high-efficiency image quality. In addition, poor image quality is to be expected unless special sensor-design techniques are included for sensors with a pixel pitch of 25 μm or less.

  11. Material accountancy for metallic fuel pin casting

    International Nuclear Information System (INIS)

    Bucher, R.G.; Orechwa, Y.; Beitel, J.C.

    1995-01-01

    The operation of the Fuel Conditioning Facility (FCF) is based on the electrometallurgical processing of spent metallic reactor fuel. The pin casting operation, although only one of several operations in FCF, was the first to be on-line. As such, it has served to demonstrate the material accountancy system in many of its facets. This paper details, for the operation of the pin casting process with depleted uranium, the interaction between the mass tracking system (MTG) and some of the ancillary computer codes which generate pertinent information for operations and material accountancy. It is necessary to distinguish between two types of material balance calculations -- closeout for operations and material accountancy for safeguards. The two have much in common, for example, the mass tracking system database and the calculation of an inventory difference, but, in general, are not congruent with regard to balance period and balance spatial domain. Moreover, the objective, assessment, and reporting requirements of the calculated inventory difference are very different in the two cases

  12. The Egyptian Hair Pin: practical, sacred, fatal

    Directory of Open Access Journals (Sweden)

    Joann Fletcher

    2016-11-01

    Full Text Available Generally regarded as little more than a mundane tool employed in daily life, the humble hairpin occasionally played a rather more prominent role in history than has perhaps been appreciated. As the most ancient implements associated with hair styling, simple pins of bone and ivory were commonly employed in Egypt by c.4000 BC as a means of securing long hair in an upswept style (e.g. Petrie and Mace 1901, 21, 34. Although their occasional use by men undermines the assumption that hairpins are 'a relatively certain example of a “gendered” artefact' (Wilfong 1997, 67, the vast majority have been found in female burials. They can be made of bone and ivory, wood, steatite, glass, gold, silver and bronze, and two 12cm long bronze examples were found within the hair of Princess Ahmosi c.1550 BC (Fletcher 1995, 376, 441 while the hair of an anonymous woman at Gurob c.AD 110 had been secured in a bun with pins of bone, tortoiseshell and silver (Walker and Bierbrier 1997, 209.

  13. Method and device for cleaning fuel pins

    International Nuclear Information System (INIS)

    Matsumoto, Kaname; Oohigashi, Yoshiaki.

    1985-01-01

    Purpose: To remove clads or scales deposited on the outer surface of fuel pins in BWR type reactors. Method: A fuel assembly taken out of a reactor core is vertically contained without detaching a channel box in a scrubber tower disposed in a liquid tight manner within a fuel pool. Then, a specifically prepared slurry is caused to flow and uprise from the bottom of the scrubber tower into the channel box and then discharged from the top of the tower. The slurry is prepared by mixing pure water and granules (for example, as activated carbon, ion exchanger resin, iron and molecular sieve) of such a granular size as not causing clogging in the channel box of the fuel assembly and having a larger specific gravity than pure water. The slurry flown into the channel box scrubs the surface of fuel pins to scrape off clads or scales. Then, discharged slurry is sent to a hydraulic cyclone to separate the granules from the clads or scales. (Ikeda, J.)

  14. Lightning Pin Injection Testing on MOSFETS

    Science.gov (United States)

    Ely, Jay J.; Nguyen, Truong X.; Szatkowski, George N.; Koppen, Sandra V.; Mielnik, John J.; Vaughan, Roger K.; Wysocki, Philip F.; Celaya, Jose R.; Saha, Sankalita

    2009-01-01

    Lightning transients were pin-injected into metal-oxide-semiconductor field-effect transistors (MOSFETs) to induce fault modes. This report documents the test process and results, and provides a basis for subsequent lightning tests. MOSFETs may be present in DC-DC power supplies and electromechanical actuator circuits that may be used on board aircraft. Results show that unprotected MOSFET Gates are susceptible to failure, even when installed in systems in well-shielded and partial-shielded locations. MOSFET Drains and Sources are significantly less susceptible. Device impedance decreased (current increased) after every failure. Such a failure mode may lead to cascading failures, as the damaged MOSFET may allow excessive current to flow through other circuitry. Preliminary assessments on a MOSFET subjected to 20-stroke pin-injection testing demonstrate that Breakdown Voltage, Leakage Current and Threshold Voltage characteristics show damage, while the device continues to meet manufacturer performance specifications. The purpose of this research is to develop validated tools, technologies, and techniques for automated detection, diagnosis and prognosis that enable mitigation of adverse events during flight, such as from lightning transients; and to understand the interplay between lightning-induced surges and aging (i.e. humidity, vibration thermal stress, etc.) on component degradation.

  15. Si-based optical I/O for optical memory interface

    Science.gov (United States)

    Ha, Kyoungho; Shin, Dongjae; Byun, Hyunil; Cho, Kwansik; Na, Kyoungwon; Ji, Hochul; Pyo, Junghyung; Hong, Seokyong; Lee, Kwanghyun; Lee, Beomseok; Shin, Yong-hwack; Kim, Junghye; Kim, Seong-gu; Joe, Insung; Suh, Sungdong; Choi, Sanghoon; Han, Sangdeok; Park, Yoondong; Choi, Hanmei; Kuh, Bongjin; Kim, Kichul; Choi, Jinwoo; Park, Sujin; Kim, Hyeunsu; Kim, Kiho; Choi, Jinyong; Lee, Hyunjoo; Yang, Sujin; Park, Sungho; Lee, Minwoo; Cho, Minchang; Kim, Saebyeol; Jeong, Taejin; Hyun, Seokhun; Cho, Cheongryong; Kim, Jeong-kyoum; Yoon, Hong-gu; Nam, Jeongsik; Kwon, Hyukjoon; Lee, Hocheol; Choi, Junghwan; Jang, Sungjin; Choi, Joosun; Chung, Chilhee

    2012-01-01

    Optical interconnects may provide solutions to the capacity-bandwidth trade-off of recent memory interface systems. For cost-effective optical memory interfaces, Samsung Electronics has been developing silicon photonics platforms on memory-compatible bulk-Si 300-mm wafers. The waveguide of 0.6 dB/mm propagation loss, vertical grating coupler of 2.7 dB coupling loss, modulator of 10 Gbps speed, and Ge/Si photodiode of 12.5 Gbps bandwidth have been achieved on the bulk-Si platform. 2x6.4 Gbps electrical driver circuits have been also fabricated using a CMOS process.

  16. Microstructural and mechanical behaviors of nano-SiC-reinforced AA7075-O FSW joints prepared through two passes

    Energy Technology Data Exchange (ETDEWEB)

    Bahrami, Mohsen, E-mail: Mohsen.bahrami@aut.ac.ir [Faculty of Mining and Materials Engineering, Amirkabir University of Technology (AUT), Hafez Aveenue, Tehran (Iran, Islamic Republic of); Farahmand Nikoo, Mohsen [Faculty of Mining and Materials Engineering, Amirkabir University of Technology (AUT), Hafez Aveenue, Tehran (Iran, Islamic Republic of); Besharati Givi, Mohammad Kazem [Department of Mechanical Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)

    2015-02-25

    In this paper, a threaded tapered pin tool was employed to fabricate a 2-pass friction stir welded (FSWed) joint. To investigate the benefits of nano-sized SiC particles on microstructural and mechanical properties of the joint, the experiment was repeated while SiC particles had been inserted along the joint line. In another joint, a square pin tool was applied in the second pass to evaluate the effectiveness of switching pin geometry between passes on the aforementioned properties. Microstructural features including grain size, second phase particles and reinforcement distribution were examined via optical and scanning electron microscopy (SEM) techniques. In addition to satisfactory connections between SiC particles and the matrix, the most homogenous particles distribution was observed in the specimen FSWed with both pin tools. This observation was further supported by atomic force microscopy (AFM) examination. Additionally, the foregoing joint demonstrated the maximum tensile strength which was synonymous with its smallest grain size. During tensile testing, SiC-free joint and SiC-reinforced ones fractured from stir zone (SZ) and base metal, respectively. Moreover, SiC-free joint showed necking phenomenon. SEM results showed that the SiC-reinforced specimens possessed ductile fracture morphologies. On the other hand, SiC-free specimen showed a quasi-cleavage fracture mode confirming its moderate percent elongation. In the meantime, SiC-reinforced specimens exhibited superior hardness level to SiC-free specimen.

  17. Effect of swift heavy Kr ions on complex permittivity of silicon PIN diode

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yun [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Su, Ping, E-mail: pingsu@scu.edu.cn [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Yang, Zhimei; Ma, Yao [Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Gong, Min, E-mail: mgong@scu.edu.cn [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China)

    2016-12-01

    Highlights: • The complex permittivity has been studied on Si PIN irradiated by heavy Kr ions. • DLTS was used to investigate damages formed in PIN diode during irradiation. • The recombination of carriers has important influence on the complex permittivity. - Abstract: The complex permittivity has been researched on silicon PIN diodes irradiated by 2150 MeV heavy Kr ions in this article. The difference of complex permittivity spectra from 1 to 10^7 Hz between irradiated and unirradiated were observed and discussed. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured at room temperature (300 K) to study the change of electrical properties in diode after irradiation. Deep level transient spectroscopy (DLTS) was used to investigate damages caused by 2150 MeV heavy Kr ions in diode. Two extra electron traps were observed, which were located at E{sub C}-0.31 eV and E{sub C}-0.17 eV. It indicated that new defects have been formed in PIN diode during irradiation. A comparison of the results illustrated that not only the carrier density but also the recombination of electron-hole pair have important influences on the properties of complex permittivity. These results offer a further indication of the mechanism about the complex permittivity property of semiconductor device, which could help to make the applications for the semiconductor device controlled by electric signals come true in the fields of optoelectronic integrated circuits, plasma antenna and so on.

  18. BARS - a heterogeneous code for 3D pin-by-pin LWR steady-state and transient calculation

    International Nuclear Information System (INIS)

    Avvakumov, A.V.; Malofeev, V.M.

    2000-01-01

    A 3D pin-by-pin dynamic model for LWR detailed calculation was developed. The model is based on a coupling of the BARS neutronic code with the RELAP5/MOD3.2 thermal hydraulic code. This model is intended to calculate a fuel cycle, a xenon transient, and a wide range of reactivity initiated accidents in a WWER and a PWR. Galanin-Feinberg heterogeneous method was realized in the BARS code. Some results for a validation of the heterogeneous method are presented for reactivity coefficients, a pin-by-pin power distribution, and a fast pulse transient. (Authors)

  19. Photoresponse analysis of the CMOS photodiodes for CMOS x-ray image sensor

    International Nuclear Information System (INIS)

    Kim, Young Soo; Ha, Jang Ho; Kim, Han Soo; Yeo, Sun Mok

    2012-01-01

    Although in the short term CMOS active pixel sensors (APSs) cannot compete with the conventionally used charge coupled devices (CCDs) for high quality scientific imaging, recent development in CMOS APSs indicate that CMOS performance level of CCDs in several domains. CMOS APSs possess thereby a number of advantages such as simpler driving requirements and low power operation. CMOS image sensors can be processed in standard CMOS technologies and the potential of on-chip integration of analog and digital circuitry makes them more suitable for several vision systems where system cost is of importance. Moreover, CMOS imagers can directly benefit from on-going technological progress in the field of CMOS technologies. Due to these advantages, the CMOS APSs are currently being investigated actively for various applications such as star tracker, navigation camera and X-ray imaging etc. In most detection systems, it is thought that the sensor is most important, since this decides the signal and noise level. So, in CMOS APSs, the pixel is very important compared to other functional blocks. In order to predict the performance of such image sensor, a detailed understanding of the photocurrent generation in the photodiodes that comprise the CMOS APS is required. In this work, we developed the analytical model that can calculate the photocurrent generated in CMOS photodiode comprising CMOS APSs. The photocurrent calculations and photo response simulations with respect to the wavelength of the incident photon were performed using this model for four types of photodiodes that can be fabricated in standard CMOS process. n + /p - sub and n + /p - epi/p - sub photodiode show better performance compared to n - well/p - sub and n - well/p - epi/p - sub due to the wider depletion width. Comparing n + /p - sub and n + /p - epi/p - sub photodiode, n + /p - sub has higher photo-responsivity in longer wavelength because of the higher electron diffusion current

  20. SI Notes.

    Science.gov (United States)

    Nelson, Robert A.

    1983-01-01

    Discusses legislation related to SI (International Systems of Units) in the United States. Indicates that although SI metric units have been officially recognized by law in the United States, U.S. Customary Units have never received a statutory basis. (JN)

  1. Gamma and Proton-Induced Dark Current Degradation of 5T CMOS Pinned Photodiode 0.18 mu{m} CMOS Image Sensors

    Science.gov (United States)

    Martin, E.; Nuns, T.; David, J.-P.; Gilard, O.; Vaillant, J.; Fereyre, P.; Prevost, V.; Boutillier, M.

    2014-02-01

    The radiation tolerance of a 0.18 μm technology CMOS commercial image sensor has been evaluated with Co60 and proton irradiations. The effects of protons on the hot pixels and dynamic bias and duty cycle conditions during gamma irradiations are studied.

  2. The ceramic SiO2 and SiO2-TiO2 coatings on biomedical Ti6Al4VELI titanium alloy

    International Nuclear Information System (INIS)

    Surowska, B.; Walczak, M.; Bienias, J.

    2004-01-01

    The paper presents the study of intermediate SiO 2 and SiO 2 -TiO 2 sol-gel coatings and dental porcelain coatings on Ti6Al4VELI titanium alloy. Surface microstructures and wear behaviour by pin-on-disc method of the ceramic coatings were investigated. The analysis revealed: (1) a compact, homogeneous SiO 2 and SiO 2 -TiO 2 coating and (2) that intermediate coatings may provide a durable joint between metal and porcelain, and (3) that dental porcelain on SiO 2 and TiO 2 coatings shows high wear resistance. (author)

  3. Pinning in BSCCO above the ordinary irreversibility line

    Science.gov (United States)

    Indenbom, M. V.; van der Beek, C. J.; Berseth, V.; Konczykowski, M.; Motohira, N.; Berger, H.; Benoit, W.

    1996-12-01

    Frequency-dependent observations of magnetic flux structures are used to show that pinning plays a principal role in the whole mixed state in Bi2Sr2CaCu2O8 (BSCCO) single crystals. We speculate that the random pinning force on the moving vortices may dominate over thermal fluctuations and considerably modify the position of the vortex lattice phase transition.

  4. Inscuteable Regulates the Pins-Mud Spindle Orientation Pathway

    Science.gov (United States)

    Mauser, Jonathon F.; Prehoda, Kenneth E.

    2012-01-01

    During asymmetric cell division, alignment of the mitotic spindle with the cell polarity axis ensures that the cleavage furrow separates fate determinants into distinct daughter cells. The protein Inscuteable (Insc) is thought to link cell polarity and spindle positioning in diverse systems by binding the polarity protein Bazooka (Baz; aka Par-3) and the spindle orienting protein Partner of Inscuteable (Pins; mPins or LGN in mammals). Here we investigate the mechanism of spindle orientation by the Insc-Pins complex. Previously, we defined two Pins spindle orientation pathways: a complex with Mushroom body defect (Mud; NuMA in mammals) is required for full activity, whereas binding to Discs large (Dlg) is sufficient for partial activity. In the current study, we have examined the role of Inscuteable in mediating downstream Pins-mediated spindle orientation pathways. We find that the Insc-Pins complex requires Gαi for partial activity and that the complex specifically recruits Dlg but not Mud. In vitro competition experiments revealed that Insc and Mud compete for binding to the Pins TPR motifs, while Dlg can form a ternary complex with Insc-Pins. Our results suggest that Insc does not passively couple polarity and spindle orientation but preferentially inhibits the Mud pathway, while allowing the Dlg pathway to remain active. Insc-regulated complex assembly may ensure that the spindle is attached to the cortex (via Dlg) before activation of spindle pulling forces by Dynein/Dynactin (via Mud). PMID:22253744

  5. IMp: The customizable LEGO(®) Pinned Insect Manipulator.

    Science.gov (United States)

    Dupont, Steen; Price, Benjamin; Blagoderov, Vladimir

    2015-01-01

    We present a pinned insect manipulator (IMp) constructed of LEGO® building bricks with two axes of movement and two axes of rotation. In addition we present three variants of the IMp to emphasise the modular design, which facilitates resizing to meet the full range of pinned insect specimens, is fully customizable, collapsible, affordable and does not require specialist tools or knowledge to assemble.

  6. Behaviour of large-area avalanche photodiodes under intense magnetic fields for VUV- visible- and X-ray photon detection

    International Nuclear Information System (INIS)

    Fernandes, L.M.P.; Antognini, A.; Boucher, M.; Conde, C.A.N.; Huot, O.; Knowles, P.; Kottmann, F.; Ludhova, L.; Mulhauser, F.; Pohl, R.; Schaller, L.A.; Santos, J.M.F. dos; Taqqu, D.; Veloso, J.F.C.A.

    2003-01-01

    The behaviour of large-area avalanche photodiodes for X-rays, visible and vacuum-ultra-violet (VUV) light detection in magnetic fields up to 5 T is described. For X-rays and visible light detection, the photodiode pulse amplitude and energy resolution were unaffected from 0 to 5 T, demonstrating the insensitivity of this type of detector to strong magnetic fields. For VUV light detection, however, the photodiode relative pulse amplitude decreases with increasing magnetic field intensity reaching a reduction of about 24% at 5 T, and the energy resolution degrades noticeably with increasing magnetic field

  7. Cracking Bank PINs by Playing Mastermind

    Science.gov (United States)

    Focardi, Riccardo; Luccio, Flaminia L.

    The bank director was pretty upset noticing Joe, the system administrator, spending his spare time playing Mastermind, an old useless game of the 70ies. He had fought the instinct of telling him how to better spend his life, just limiting to look at him in disgust long enough to be certain to be noticed. No wonder when the next day the director fell on his chair astonished while reading, on the newspaper, about a huge digital fraud on the ATMs of his bank, with millions of Euros stolen by a team of hackers all around the world. The article mentioned how the hackers had 'played with the bank computers just like playing Mastermind', being able to disclose thousands of user PINs during the one-hour lunch break. That precise moment, a second before falling senseless, he understood the subtle smile on Joe's face the day before, while training at his preferred game, Mastermind.

  8. The lumped parameter model for fuel pins

    Energy Technology Data Exchange (ETDEWEB)

    Liu, W S [Ontario Hydro, Toronto, ON (Canada)

    1996-12-31

    The use of a lumped fuel-pin model in a thermal-hydraulic code is advantageous because of computational simplicity and efficiency. The model uses an averaging approach over the fuel cross section and makes some simplifying assumptions to describe the transient equations for the averaged fuel, fuel centerline and sheath temperatures. It is shown that by introducing a factor in the effective fuel conductivity, the analytical solution of the mean fuel temperature can be modified to simulate the effects of the flux depression in the heat generation rate and the variation in fuel thermal conductivity. The simplified analytical method used in the transient equation is presented. The accuracy of the lumped parameter model has been compared with the results from the finite difference method. (author). 4 refs., 2 tabs., 4 figs.

  9. Effective augmentation of networked systems and enhancing pinning controllability

    Science.gov (United States)

    Jalili, Mahdi

    2018-06-01

    Controlling dynamics of networked systems to a reference state, known as pinning control, has many applications in science and engineering. In this paper, we introduce a method for effective augmentation of networked systems, while also providing high levels of pinning controllability for the final augmented network. The problem is how to connect a sub-network to an already existing network such that the pinning controllability is maximised. We consider the eigenratio of the augmented Laplacian matrix as a pinning controllability metric, and use graph perturbation theory to approximate the influence of edge addition on the eigenratio. The proposed metric can be effectively used to find the inter-network links connecting the disjoint networks. Also, an efficient link rewiring approach is proposed to further optimise the pinning controllability of the augmented network. We provide numerical simulations on synthetic networks and show that the proposed method is more effective than heuristic ones.

  10. Artificial pinning center technology to enhance vortex pinning in YBCO coated conductors

    International Nuclear Information System (INIS)

    Matsumoto, Kaname; Mele, Paolo

    2010-01-01

    Crystalline defects on the nano-scale, which are called artificial pinning centers (APCs), were successfully introduced into high-temperature superconductors (HTS) by nanotechnology, in order to strongly pin the quantized vortices. The critical current densities, J c , of the HTS films were dramatically improved by APCs. It is possible to form APCs in high-quality epitaxial films, keeping the desired dimensionality, volume fraction, spatial distribution and so on. The in-field J c of HTS films at 77 K was improved by one order of magnitude compared with previous values using APCs. This technology can be applied to the coated conductor technology in progress, and a high J c has already been reported. A current outline of the research is described in this review.

  11. Retractable Pin Tools for the Friction Stir Welding Process

    Science.gov (United States)

    1998-01-01

    Two companies have successfully commercialized a specialized welding tool developed at the Marshall Space Flight Center (MSFC). Friction stir welding uses the high rotational speed of a tool and the resulting frictional heat created from contact to crush, 'stir' together, and forge a bond between two metal alloys. It has had a major drawback, reliance on a single-piece pin tool. The pin is slowly plunged into the joint between two materials to be welded and rotated as high speed. At the end of the weld, the single-piece pin tool is retracted and leaves a 'keyhole,' something which is unacceptable when welding cylindrical objects such as drums, pipes and storage tanks. Another drawback is the requirement for different-length pin tools when welding materials of varying thickness. An engineer at the MSFC helped design an automatic retractable pin tool that uses a computer-controlled motor to automatically retract the pin into the shoulder of the tool at the end of the weld, preventing keyholes. This design allows the pin angle and length to be adjusted for changes in material thickness and results in a smooth hole closure at the end of the weld. Benefits of friction stir welding, using the MSFC retractable pin tool technology, include the following: The ability to weld a wide range of alloys, including previously unweldable and composite materials; provision of twice the fatigue resistance of fusion welds and no keyholes; minimization of material distortion; no creation of hazards such as welding fumes, radiation, high voltage, liquid metals, or arcing; automatic retraction of the pin at the end of the weld; and maintaining full penetration of the pin.

  12. Radiation profile measurements for edge transport barrier discharges in Compact Helical System using AXUV photodiode arrays

    International Nuclear Information System (INIS)

    Suzuki, C.; Okamura, S.; Minami, T.; Akiyama, T.; Fujisawa, A.; Ida, K.; Isobe, M.; Matsuoka, K.; Nagaoka, K.; Nishimura, S.; Peterson, B. J.; Shimizu, A.; Takahashi, C.; Toi, K.; Yoshimura, Y.

    2005-01-01

    The formation of edge transport barrier (ETB) has recently been found in Compact Helical System (CHS) plasmas heated by co-injected neutral beam injection (NBI) with strong gas puffing. This regime is characterized by the appearance of the steep gradient of the electron density near the edge following the abrupt drop of hydrogen Balmer alpha (H α ) line intensity. In addition to single channel pyroelectric detector as a conventional bolometer, we have employed unfiltered absolute extreme ultraviolet (AXUV) photodiode arrays as a simple and low-cost diagnostic to investigate spatial and temporal variations of radiation emissivity in the ETB discharges. A compact mounting module for a 20 channel AXUV photodiode array including an in-vacuum preamplifier for immediate current-voltage conversion has successfully been designed and fabricated. Two identical modules installed in the upper and lower viewports provide 40 lines of sight covering the inboard and outboard sides within the horizontally elongated cross section of the CHS plasma with wide viewing angle. Although spectral uniformity of the detector sensitivity of the AXUV photodiode is unsatisfied for photon energies lower than 200 eV, it has been confirmed that the signals of AXUV photodiode and pyroelectric detector in the ETB discharges show roughly the same behavior except for the very beginning and end of the discharges. The results of the measurements in typical ETB discharges show that the signals of all the channels of the AXUV photodiode arrays begin to increase more rapidly at the moment of the transition than before. The rate of the increase is larger for the edge viewing chords than for the center viewing ones, which indicates the flattening of the radiation profile following the change in the electron density profile after the formation of the ETB. However, the signals for the edge chords tend to saturate after several tens of milliseconds, while they still continue to increase for the central chords

  13. A pinning puzzle: two similar, non-superconducting chemical deposits in YBCO-one pins, the other does not

    Energy Technology Data Exchange (ETDEWEB)

    Sawh, Ravi-Persad; Weinstein, Roy; Gandini, Alberto; Skorpenske, Harley; Parks, Drew, E-mail: Weinstein@uh.ed [Beam Particle Dynamics Laboratories, University of Houston, Houston, TX 77204-5005 (United States); Department of Physics, University of Houston, Houston, TX 77204-5005 (United States); Texas Center for Superconductivity at UH, University of Houston, Houston, TX 77204-5002 (United States)

    2009-09-15

    The pinning effects of two kinds of U-rich deposits in YBCO (YBa{sub 2}Cu{sub 3}O{sub 7-{delta}}) are compared. One is a five-element compound, (U{sub 0.6}Pt{sub 0.4})YBa{sub 2}O{sub 6}, which is a paramagnetic double perovskite which forms as profuse stable nanosize deposits, and pins very well. The other is a four-element compound, (U{sub 0.4}Y{sub 0.6})BaO{sub 3}, which is a ferromagnetic single perovskite which forms as profuse stable nanosize deposits and pins very weakly or not at all. The pinning comparison is done with nearly equal deposit sizes and number of deposits per unit volume for the two compounds. Evidence for the pinning capability, chemical makeup, x-ray diffraction signature, and magnetic properties of the two compounds is reported.

  14. Analysis of photoconductive mechanisms of organic-on-inorganic photodiodes

    Science.gov (United States)

    Ocaya, R. O.; Dere, A.; Al-Sehemi, Abdullah G.; Al-Ghamdi, Ahmed A.; Soylu, M.; Yakuphanoglu, F.

    2017-09-01

    In this work, it is shown that choosing an organic-on-inorganic Schottky diode for photoconductive sensing by a using a power law exponent (PLE or γ) determined at a single bias point is a limited approach. The standard literature approach does not highlight any bias voltage effects on the distribution of interface state density and other operationally important parameters. In this paper we suggest a new empirical method that holistically highlights the variation of γ with voltage, irradiance and temperature to reach a more informed choice of photosensor for real applications. We obtain a simple, plausible relation of the variation of barrier height, Φ, with voltage, irradiance and temperature. The method is evaluated with data collected previously for Schottky diodes of structure Al/p-Si/organic-semiconductor (OSC)/Au, where OSC is Coumarin-doped with graphene oxide (GO), Cobalt Phthacyanine (CoPC) doped with GO or PCBM doped with GO, respectively. The method reproduces published data for the three diodes reported at specific bias and provides for the first time some qualitative evidence of barrier height variation with light intensity, for which a possible physical basis is also given. Typically, Schottky barrier height is characterized using dark current leading to an under reporting of the effect of illumination on barrier height. Finally, since recombination mechanisms are gauged on the basis of the magnitude of PLE, the method facilitates the identification of the recombination mechanism at a given bias.

  15. Highly Sensitive Switchable Heterojunction Photodiode Based on Epitaxial Bi2FeCrO6 Multiferroic Thin Films.

    Science.gov (United States)

    Huang, Wei; Chakrabartty, Joyprokash; Harnagea, Catalin; Gedamu, Dawit; Ka, Ibrahima; Chaker, Mohamed; Rosei, Federico; Nechache, Riad

    2018-04-18

    Perovskite multiferroic oxides are promising materials for the realization of sensitive and switchable photodiodes because of their favorable band gap (heterojunction was fabricated by pulsed laser deposition. The heterojunction photodiode exhibits a large ideality factor ( n = ∼5.0) and a response time as fast as 68 ms, thanks to the effective charge carrier transport and collection at the BFCO/SRO interface. The diode can switch direction when the electric polarization is reversed by an external voltage pulse. The time-resolved photoluminescence decay of the device measured at ∼500 nm demonstrates an ultrafast charge transfer (lifetime = ∼6.4 ns) in BFCO/SRO heteroepitaxial structures. The estimated responsivity value at 500 nm and zero bias is 0.38 mA W -1 , which is so far the highest reported for any FE thin film photodiode. Our work highlights the huge potential for using multiferroic oxides to fabricate highly sensitive and switchable photodiodes.

  16. Proof-of-concept and feasibility demonstrations for an avalanche photodiode/photoelastic modulator-based imaging polarimeter

    Data.gov (United States)

    National Aeronautics and Space Administration — Building on the successful heritage of JPL’s Multiangle SpectroPolarimetric Imager (MSPI), we propose infusing HgCdTe avalanche photodiode (APD) array technology...

  17. Surface passivation of GaInAsSb photodiodes with thioacetamide

    Energy Technology Data Exchange (ETDEWEB)

    Salesse, A.; Joullie, A.; Chevrier, F.; Cuminal, Y.; Ferblantier, G.; Christol, P. [Institut d' Electronique du Sud (IES-CEM2), UMR CNRS 5507, Case 067, Universite Montpellier 2, 34 095 Montpellier Cedex 05 (France); Calas, P. [UMR CNRS 5073 CHIMIE, Case 017, Universite Montpellier 2, 34 095 Montpellier Cedex 05 (France); Nieto, J. [Instituto de Investigacion en Comunicacion Optica (IICO), Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, San Luis Potosi (Mexico)

    2007-04-15

    AlGaAsSb/GaInAsSb heterojunction mesa photodiodes having 2.2 {mu}m cutoff wavelength, grown by MBE on (p) GaSb substrates, have been passivated using thioacetamide CH{sub 4}CSNH{sub 2} and ammonium sulphide (NH{sub 4}){sub 2}S. Superior characteristics were obtained from devices processed with thioacetamide in acid medium (pH=2.4). At room temperature the surface leakage currents were suppressed, and the photodiodes showed R{sub 0}A product as high as 16 {omega}cm{sup 2} and detectivity D{sup *}(2 {mu}m,0 V){proportional_to}10{sup 10} cmHz{sup 1/2}W{sup -1}. A model explaining sulfuration mechanisms with thioacetamide and (NH{sub 4}){sub 2}S is proposed. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Feasibility study of photodiodes utilization in the soil-moisture determination by gamma transmission

    International Nuclear Information System (INIS)

    Santos, L.A.P. dos.

    1992-08-01

    This study was done to verify the viability of photodiodes, as gamma radiation detector ( 241 Am - Energy=60 KeV), to measure soil water content. The photodiodes used had different mechanical and electrical characteristics, and were tested on soils of different textures. A good linear correlation between the logarithm of the attenuation factor and soil-moisture demonstrated such viability, and that the low photopeak efficiency of these devices is not a limitation to the measurement of soil water content. Furthermore, the stability, the portability, and low cost of such semiconductor devices, including its electronic system, represent relevant characteristics that may justify the development of a reliable gamma meter system for field studies. (author). 37 refs, 21 figs, 20 tabs

  19. Wet etching and chemical polishing of InAs/GaSb superlattice photodiodes

    International Nuclear Information System (INIS)

    Chaghi, R; Cervera, C; Aït-Kaci, H; Grech, P; Rodriguez, J B; Christol, P

    2009-01-01

    In this paper, we studied wet chemical etching fabrication of the InAs/GaSb superlattice mesa photodiode for the mid-infrared region. The details of the wet chemical etchants used for the device process are presented. The etching solution is based on orthophosphoric acid (H 3 PO 4 ), citric acid (C 6 H 8 O 7 ) and H 2 O 2 , followed by chemical polishing with the sodium hypochlorite (NaClO) solution and protection with photoresist polymerized. The photodiode performance is evaluated by current–voltage measurements. The zero-bias resistance area product R 0 A above 4 × 10 5 Ω cm 2 at 77 K is reported. The device did not show dark current degradation at 77 K after exposition during 3 weeks to the ambient air

  20. Setting best practice criteria for self-differencing avalanche photodiodes in quantum key distribution

    Science.gov (United States)

    Koehler-Sidki, Alexander; Dynes, James F.; Lucamarini, Marco; Roberts, George L.; Sharpe, Andrew W.; Savory, Seb J.; Yuan, Zhiliang; Shields, Andrew J.

    2017-10-01

    In recent years, the security of avalanche photodiodes as single photon detectors for quantum key distribution has been subjected to much scrutiny. The most prominent example of this surrounds the vulnerability of such devices to blinding under strong illumination. We focus on self-differencing avalanche photodiodes, single photon detectors that have demonstrated count rates exceeding 1 GCounts/s resulting in secure key rates over 1 MBit/s. These detectors use a passive electronic circuit to cancel any periodic signals thereby enhancing detection sensitivity. However this intrinsic feature can be exploited by adversaries to gain control of the devices using illumination of a moderate intensity. Through careful experimental examinations, we define here a set of criteria for these detectors to avoid such attacks.

  1. Modified Single Photo-diode (MSPD) Detection Technique for SAC-OCDMA System

    Science.gov (United States)

    Abdulqader, Sarah G.; Fadhil, Hilal A.; Aljunid, S. A.

    2015-03-01

    In this paper, a new detection technique called modified single photo-diode (MSPD) detection for SAC-OCDMA system is proposed. The proposed system based on the single photo-diode (SPD) detection technique. The new detection technique is proposed to overcome the limitation of phase-induced intensity noise (PIIN) in SPD detection technique. However, the proposed detection is based on an optical hard limiter (OHL) followed by a SPD and a low-pass filter (LPF) in order to suppress the phase intensity noise (PIIN) at the receiver side. The results show that the MSPD detection based on OHL has a good performance even when the transmission distance is long, which is different from the case of SPD detection technique. Therefore, the MSPD detection technique is shown to be effective to improve the bit error rate (BER<10-9) and to suppress the noise in the practical optical fiber network.

  2. HgCdTe Avalanche Photodiode Detectors for Airborne and Spaceborne Lidar at Infrared Wavelengths

    Science.gov (United States)

    Sun, Xiaoli; Abshire, James B.; Beck, Jeffrey D.; Mitra, Pradip; Reiff, Kirk; Yang, Guangning

    2017-01-01

    We report results from characterizing the HgCdTe avalanche photodiode (APD) sensorchip assemblies (SCA) developed for lidar at infrared wavelength using the high density vertically integrated photodiodes (HDVIP) technique. These devices demonstrated high quantum efficiency, typically greater than 90 between 0.8 micrometers and the cut-off wavelength, greater than 600 APD gain, near unity excess noise factor, 6-10 MHz electrical bandwidth and less than 0.5 fW/Hz(exp.1/2) noise equivalent power (NEP). The detectors provide linear analog output with a dynamic range of 2-3 orders of magnitude at a fixed APD gain without averaging, and over 5 orders of magnitude by adjusting the APD and preamplifier gain settings. They have been successfully used in airborne CO2 and CH4 integrated path differential absorption (IPDA) lidar as a precursor for space lidar applications.

  3. Optimal pin enrichment distributions in nuclear reactor fuel bundles

    International Nuclear Information System (INIS)

    Lim, E.Y.

    1976-01-01

    A methodology has been developed to determine the fuel pin enrichment distribution that yields the best approximation to a prescribed power distribution in nuclear reactor fuel bundles. The problem is formulated as an optimization problem in which the optimal pin enrichments minimize the sum of squared deviations between the actual and prescribed fuel pin powers. A constant average enrichment constraint is imposed to ensure that a suitable value of reactivity is present in the bundle. When constraints are added that limit the fuel pins to a few enrichment types, one must determine not only the optimal values of the enrichment types but also the optimal distribution of the enrichment types amongst the pins. A matrix of boolean variables is used to describe the assignment of enrichment types to the pins. This nonlinear mixed integer programming problem may be rigorously solved with either exhaustive enumeration or branch and bound methods using a modification of the algorithm from the continuous problem as a suboptimization. Unfortunately these methods are extremely cumbersome and computationally overwhelming. Solutions which require only a moderate computational effort are obtained by assuming that the fuel pin enrichments in this problem are ordered as in the solution to the continuous problem. Under this assumption search schemes using either exhaustive enumeration or branch and bound become computationally attractive. An adaptation of the Hooke--Jeeves pattern search technique is shown to be especially efficient

  4. Roles of pinning strength and density in vortex melting

    International Nuclear Information System (INIS)

    Obaidat, I M; Khawaja, U Al; Benkraouda, M

    2008-01-01

    We have investigated the role of pinning strength and density on the equilibrium vortex-lattice to vortex-liquid phase transition under several applied magnetic fields. This study was conducted using a series of molecular dynamic simulations on several samples with different strengths and densities of pinning sites which are arranged in periodic square arrays. We have found a single solid-liquid vortex transition when the vortex filling factor n>1. We have found that, for fixed pinning densities and strengths, the melting temperature, T m , decreases almost linearly with increasing magnetic field. Our results provide direct numerical evidence for the significant role of both the strength and density of pinning centers on the position of the melting line. We have found that the vortex-lattice to vortex-liquid melting line shifts up as the pinning strength or the pinning density was increased. The effect on the melting line was found to be more pronounced at small values of strength and density of pinning sites

  5. Loss of Pin1 Suppresses Hedgehog-Driven Medulloblastoma Tumorigenesis

    Directory of Open Access Journals (Sweden)

    Tao Xu

    2017-03-01

    Full Text Available Medulloblastoma is the most common malignant brain tumor in children. Therapeutic approaches to medulloblastoma (combination of surgery, radiotherapy, and chemotherapy have led to significant improvements, but these are achieved at a high cost to quality of life. Alternative therapeutic approaches are needed. Genetic mutations leading to the activation of the Hedgehog pathway drive tumorigenesis in ~30% of medulloblastoma. In a yeast two-hybrid proteomic screen, we discovered a novel interaction between GLI1, a key transcription factor for the mediation of Hedgehog signals, and PIN1, a peptidylprolyl cis/trans isomerase that regulates the postphosphorylation fate of its targets. The GLI1/PIN1 interaction was validated by reciprocal pulldowns using epitope-tagged proteins in HEK293T cells as well as by co-immunoprecipiations of the endogenous proteins in a medulloblastoma cell line. Our results support a molecular model in which PIN1 promotes GLI1 protein abundance, thus contributing to the positive regulation of Hedgehog signals. Most importantly, in vivo functional analyses of Pin1 in the GFAP-tTA;TRE-SmoA1 mouse model of Hedgehog-driven medulloblastoma demonstrate that the loss of Pin1 impairs tumor development and dramatically increases survival. In summary, the discovery of the GLI1/PIN1 interaction uncovers PIN1 as a novel therapeutic target in Hedgehog-driven medulloblastoma tumorigenesis.

  6. Thermoluminescent accident dose reader with photodiode; Termoluminiscencni litalnik akcidentnih doz s fotodiodo

    Energy Technology Data Exchange (ETDEWEB)

    Miklavzic, U; Mihelic, M [Institut Jozef Stefan, Ljubljana (Yugoslavia)

    1982-07-01

    The field version of TL reader for accident dose region 0.01-20 Gy is described. For light detection, the thermostated photodiode was used permitting measurements at the ambient temperatures from -20 C degrees to 50 C degrees, and a new mode of the glow curve integration. Results can be presented as integral or peak values of the glow curve. The reader was adapted for dosemeters IJS-TLD08 from sintered CaF2:Mn pellets. (author)

  7. X-ray spectrometry with Peltier-cooled large area avalanche photodiodes

    International Nuclear Information System (INIS)

    Fernandes, L.M.P.; Lopes, J.A.M.; Santos, J.M.F. dos; Conde, C.A.N.

    2004-01-01

    Performance characteristics of the response of a Peltier-cooled large-area avalanche photodiode are investigated. Detector gain, energy linearity, energy resolution and minimum detectable energy are studied at different operation temperatures. Detector energy resolution and lowest detectable X-ray energy present a strong improvement as the operation temperature is reduced from 25 to 15 deg. C and slower improvements are achieved for temperatures below 10 deg. C

  8. Comparison between Conventional OCDMA and Subcarrier Multiplexing SAC OCDMA System Based on Single Photodiode Detection

    OpenAIRE

    Ahmad N. A. A; Junita M. N; Aljunid Syed Alwi; Che Beson Mohd Rashidi; Endut Rosdisham

    2017-01-01

    This paper demonstrates the comparison between conventional OCDMA system and subcarrier multiplexing (SCM) SAC-OCDMA system by applying Recursive Combinatorial (RC) code based on single photodiode detection (SPD). SPD is used in the receiver part to reduce the effect of multiple access interference (MAI) which contributes as a dominant noise in incoherent SAC-OCDMA systems. From this analysis, the performance of SCM OCDMA network could be improved by using lower data rates and higher received...

  9. High speed, wide dynamic range analog signal processing for avalanche photodiode

    CERN Document Server

    Walder, J P; Pangaud, P

    2000-01-01

    A wide dynamic range multi-gain analog transimpedance amplifier integrated circuit has been developed for avalanche photodiode signal processing. The 96 dB input dynamic range is divided into four ranges of 12-bits each in order to provide 40 MHz analog sampled data to a 12-bits ADC. This concept which has been integrated in both BiCMOS and full complementary bipolar technology along with fitted design techniques will be presented.

  10. High speed, wide dynamic range analog signal processing for avalanche photodiode

    International Nuclear Information System (INIS)

    Walder, J.P.; El Mamouni, Houmani; Pangaud, Patrick

    2000-01-01

    A wide dynamic range multi-gain analog transimpedance amplifier integrated circuit has been developed for avalanche photodiode signal processing. The 96 dB input dynamic range is divided into four ranges of 12-bits each in order to provide 40 MHz analog sampled data to a 12-bits ADC. This concept which has been integrated in both BiCMOS and full complementary bipolar technology along with fitted design techniques will be presented

  11. High speed, wide dynamic range analog signal processing for avalanche photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Walder, J.P. E-mail: walder@in2p3.fr; El Mamouni, Houmani; Pangaud, Patrick

    2000-03-11

    A wide dynamic range multi-gain analog transimpedance amplifier integrated circuit has been developed for avalanche photodiode signal processing. The 96 dB input dynamic range is divided into four ranges of 12-bits each in order to provide 40 MHz analog sampled data to a 12-bits ADC. This concept which has been integrated in both BiCMOS and full complementary bipolar technology along with fitted design techniques will be presented.

  12. Bio-inspired nano-photodiode for Low Light, High Resolution and crosstalk-free CMOS image sensing

    KAUST Repository

    Saffih, Faycal

    2011-05-01

    Previous attempts have been devoted to mimic biological vision intelligence at the architectural system level. In this paper, a novel imitation of biological visual system intelligence is suggested, at the device level with the introduction of novel photodiode morphology. The proposed bio-inspired nanorod photodiode puts the depletion region length on the path of the incident photon instead of on its width, as the case is with the planar photodiodes. The depletion region has a revolving volume to increase the photodiode responsivity, and thus its photosensitivity. In addition, it can virtually boost the pixel fill factor (FF) above the 100% classical limit due to decoupling of its vertical sensing area from its limited planar circuitry area. Furthermore, the suggested nanorod photodiode photosensitivity is analytically proven to be higher than that of the planar photodiode. We also show semi-empirically that the responsivity of the suggested device varies linearly with its height; this important feature has been confirmed using Sentaurus simulation. The proposed nano-photorod is believed to meet the increasingly stringent High-Resolution-Low-Light (HRLL) detection requirements of the camera-phone and biomedical imaging markets. © 2011 IEEE.

  13. Optical and electrical characterization of AlGaN based Schottky photodiodes after annealing at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Ngoepe, PNM, E-mail: phuti.ngoepe@up.ac.za; Meyer, WE; Diale, M; Auret, FD; Schalkwyk, L van

    2014-04-15

    In this study a comparison is made between the optical and electrical properties of Ni/Au and Ni/Ir/Au Schottky photodiodes based on Al{sub 0.35}Ga{sub 0.65}N. The effects of inserting Ir between Ni and Au are of particular interest. The comparison in the properties is done after annealing the photodiodes at different temperatures in an argon gas ambient. The reverse current decreased with annealing temperature up to 400 °C for the Ni/Au Schottky photodiode and up to 500 °C for the Ni/Ir/Au photodiode. The Schottky barrier heights increased with increasing annealing temperature. The responsivity of the Ni/Au photodiode was higher than that of the Ni/Ir/Au photodiode. The transmission of the Ni/Au metal layer improved with increasing annealing temperature up to 500 °C and the best transmission of the Ni/Ir/Au metal layer was after 400 °C annealing.

  14. Performance of a PET detector module utilizing an array of silicon photodiodes to identify the crystal of interaction

    International Nuclear Information System (INIS)

    Moses, W.W.; Derenzo, S.E.; Nutt, R.; Digby, W.M.; Williams, C.W.; Andreaco, M.

    1993-01-01

    The authors initial performance results for a new multi-layer PET detector module consisting of an array of 3 mm square by 30 mm deep BGO crystals coupled on one end to a single photomultiplier tube and on the opposite end to an array of 3 mm square silicon photodiodes. The photomultiplier tube provides an accurate timing pulse and energy discrimination for all the crystals in the module, while the silicon photodiodes identify the crystal of interaction. When a single BGO crystal at +25 C is excited with 511 keV photons, the authors measure a photodiode signal centered at 700 electrons (e - ) with noise of 375 e - fwhm. When a four crystal/photodiode module is excited with a collimated line source of 511 keV photons, the crystal of interaction is correctly identified 82% of the time. The misidentification rate can be greatly reduced and an 8 x 8 crystal/photodiode module constructed by using thicker depletion layer photodiodes or cooling to 0 C

  15. Fuel pin design algorithm for conceptual design studies

    International Nuclear Information System (INIS)

    Uselman, J.P.

    1979-01-01

    Two models are available which are currently verified by part of the requirements and which are adaptable as algorithms for the complete range. Fuel thermal performance is described by the HEDL SIEX model. Cladding damage and total deformation are determined by the GE GRO-II structural analysis code. A preliminary fuel pin performance model for analysis of (U, P/sub U/)O 2 pins in the COROPT core conceptual design system has been constructed by combining the key elements of SIEX and GRO-II. This memo describes the resulting pin performance model and its interfacing with COROPT system. Some exemplary results are presented

  16. Self-organized critical behavior in pinned flux lattices

    International Nuclear Information System (INIS)

    Pla, O.; Nori, F.

    1991-01-01

    We study the response of pinned fluxed lattices, under small perturbations in the driving force, below and close to the pinning-depinning transition. For driving Lorentz forces below F c (the depinning force at which the whole flux lattice slides), the system has instabilities against small force increases, with a power-law distribution characteristic of self-organized criticality. Specifically, D(d)∼d -1,3 , where d is the displacement of a flux line after a very small force increase. We also study the initial stages of the motion of the lattice once the driving force overcomes the pinning forces

  17. Study of PIN diode energy traps created by neutrons

    International Nuclear Information System (INIS)

    Sopko, V; Dammer, J; Sopko, B; Chren, D

    2013-01-01

    Characterization of radiation defects is still ongoing and finds greater application in the increasing radiation doses on semiconductor detectors in experiments. Studying the changes of silicon PIN diode for high doses of radiation is the fundamental motivation for our measurements. In this article we describe the behavior of the PIN diode and development of the disorder caused by neutrons from a 252Cf and doses up to 8 Gy. The calibration curve for PIN diode shows the effect of disorders as the changes of the voltampere characteristics depending on the dose of neutron irradiation. The measured values for defects are in good agreement with created energy traps.

  18. Fabrication of oxide dispersion strengthened ferritic clad fuel pins

    International Nuclear Information System (INIS)

    Zirker, L.R.; Bottcher, J.H.; Shikakura, S.; Tsai, C.L.

    1991-01-01

    A resistance butt welding procedure was developed and qualified for joining ferritic fuel pin cladding to end caps. The cladding are INCO MA957 and PNC ODS lots 63DSA and 1DK1, ferritic stainless steels strengthened by oxide dispersion, while the end caps are HT9 a martensitic stainless steel. With adequate parameter control the weld is formed without a residual melt phase and its strength approaches that of the cladding. This welding process required a new design for fuel pin end cap and weld joint. Summaries of the development, characterization, and fabrication processes are given for these fuel pins. 13 refs., 6 figs., 1 tab

  19. Inverse crystallization if Abrikosov vortex system at periodic pinning

    CERN Document Server

    Zyubin, M V; Kashurnikov, V A

    2002-01-01

    The vortex system in the quasi-two-dimensional HTSC plate is considered in the case of the periodic pinning. The M(H) magnetization curves by various values of the external magnetic field and different temperatures are calculated through the Monte Carlo method. It is shown that in the case of the periodic pinning the crystallization of the vortex system is possible by the temperature increase. A number of peculiarities conditioned by the impact of the pinning centers periodic lattice are identified on the magnetization curves. The pictures of the vortex distribution corresponding to various points on the M(H) curve are obtained

  20. Analyzing the use of pins in safety bearings

    DEFF Research Database (Denmark)

    da Fonseca, Cesar A. L. L.; Weber, Hans I.; Fleischer, Philip F.

    2015-01-01

    A new concept for safety bearings is analyzed: useful in emergency situations, it shall protect the bearing from destruction by the use of pins which impact with a disc, both capable of good energy dissipation. Results of work in progress are presented by validating partial stages......–Kutta method is validated with experimental results. Simulations of rotor orbits due to the impact condition are analyzed and compared to data obtained from the experiment giving a good perspective on the use of pins. The contact interaction between rotor and pins uses an elastic-dissipative model. In addition...

  1. How Helpful is Colour-Cueing of PIN Entry?

    OpenAIRE

    Renaud, Karen; Ramsay, Judith

    2014-01-01

    21st Century citizens are faced with the need to remember numbers of PINs (Personal Identification Numbers) in order to do their daily business, and they often have difficulties due to human memory limitations. One way of helping them could be by providing cues during the PIN entry process. The provision of cues that would only be helpful to the PIN owner is challenging because the cue should only make sense to the legitimate user, and not to a random observer. In this paper we report on an e...

  2. Discovery of novel selenium derivatives as Pin1 inhibitors by high-throughput screening

    International Nuclear Information System (INIS)

    Subedi, Amit; Shimizu, Takeshi; Ryo, Akihide; Sanada, Emiko; Watanabe, Nobumoto; Osada, Hiroyuki

    2016-01-01

    Peptidyl prolyl cis/trans isomerization by Pin1 regulates various oncogenic signals during cancer progression, and its inhibition through multiple approaches has established Pin1 as a therapeutic target. However, lack of simplified screening systems has limited the discovery of potent Pin1 inhibitors. We utilized phosphorylation-dependent binding of Pin1 to its specific substrate to develop a screening system for Pin1 inhibitors. Using this system, we screened a chemical library, and identified a novel selenium derivative as Pin1 inhibitor. Based on structure-activity guided chemical synthesis, we developed more potent Pin1 inhibitors that inhibited cancer cell proliferation. -- Highlights: •Novel screening for Pin1 inhibitors based on Pin1 binding is developed. •A novel selenium compound is discovered as Pin1 inhibitor. •Activity guided chemical synthesis of selenium derivatives resulted potent Pin1 inhibitors.

  3. A sensitive ultraviolet light photodiode based on graphene-on-zinc oxide Schottky junction

    Directory of Open Access Journals (Sweden)

    Zhang Teng-Fei

    2016-11-01

    Full Text Available In this study, we present a simple ultraviolet (UV light photodiode by transferring a layer of graphene film on single-crystal ZnO substrate. The as-fabricated heterojunction exhibited typical rectifying behavior, with a Schottky barrier height of 0.623 eV. Further optoelectronic characterization revealed that the graphene-ZnO Schottky junction photodiode displayed obvious sensitivity to 365-nm light illumination with good reproducibility. The responsivity and photoconductive gain were estimated to be 3×104 A/W and 105, respectively, which were much higher than other ZnO nanostructure-based devices. In addition, it was found that the on/off ratio of the present device can be considerably improved from 2.09 to 12.1, when the device was passivated by a layer of AlOx film. These results suggest that the present simply structured graphene-ZnO UV photodiode may find potential application in future optoelectronic devices.

  4. A sensitive ultraviolet light photodiode based on graphene-on-zinc oxide Schottky junction

    Science.gov (United States)

    Zhang, Teng-Fei; Wu, Guo-An; Wang, Jiu-Zhen; Yu, Yong-Qiang; Zhang, Deng-Yue; Wang, Dan-Dan; Jiang, Jing-Bo; Wang, Jia-Mu; Luo, Lin-Bao

    2017-08-01

    In this study, we present a simple ultraviolet (UV) light photodiode by transferring a layer of graphene film on single-crystal ZnO substrate. The as-fabricated heterojunction exhibited typical rectifying behavior, with a Schottky barrier height of 0.623 eV. Further optoelectronic characterization revealed that the graphene-ZnO Schottky junction photodiode displayed obvious sensitivity to 365-nm light illumination with good reproducibility. The responsivity and photoconductive gain were estimated to be 3×104 A/W and 105, respectively, which were much higher than other ZnO nanostructure-based devices. In addition, it was found that the on/off ratio of the present device can be considerably improved from 2.09 to 12.1, when the device was passivated by a layer of AlOx film. These results suggest that the present simply structured graphene-ZnO UV photodiode may find potential application in future optoelectronic devices.

  5. A Single-Chip Solar Energy Harvesting IC Using Integrated Photodiodes for Biomedical Implant Applications.

    Science.gov (United States)

    Chen, Zhiyuan; Law, Man-Kay; Mak, Pui-In; Martins, Rui P

    2017-02-01

    In this paper, an ultra-compact single-chip solar energy harvesting IC using on-chip solar cell for biomedical implant applications is presented. By employing an on-chip charge pump with parallel connected photodiodes, a 3.5 × efficiency improvement can be achieved when compared with the conventional stacked photodiode approach to boost the harvested voltage while preserving a single-chip solution. A photodiode-assisted dual startup circuit (PDSC) is also proposed to improve the area efficiency and increase the startup speed by 77%. By employing an auxiliary charge pump (AQP) using zero threshold voltage (ZVT) devices in parallel with the main charge pump, a low startup voltage of 0.25 V is obtained while minimizing the reversion loss. A 4 V in gate drive voltage is utilized to reduce the conduction loss. Systematic charge pump and solar cell area optimization is also introduced to improve the energy harvesting efficiency. The proposed system is implemented in a standard 0.18- [Formula: see text] CMOS technology and occupies an active area of 1.54 [Formula: see text]. Measurement results show that the on-chip charge pump can achieve a maximum efficiency of 67%. With an incident power of 1.22 [Formula: see text] from a halogen light source, the proposed energy harvesting IC can deliver an output power of 1.65 [Formula: see text] at 64% charge pump efficiency. The chip prototype is also verified using in-vitro experiment.

  6. The Study of Al0.29Ga0.71N-BASED Schottky Photodiodes Grown on Silicon by Plasma-Assisted Molecular Beam Epitaxy

    Science.gov (United States)

    Mohd Yusoff, M. Z.; Hassan, Z.; Chin, C. W.; Hassan, H. Abu; Abdullah, M. J.; Mohammad, N. N.; Ahmad, M. A.; Yusof, Y.

    2013-05-01

    In this paper, the growth and characterization of epitaxial Al0.29Ga0.71N grown on Si(111) by RF-plasma assisted molecular beam epitaxy (MBE) are described. The Al mole fraction was derived from the HR-XRD symmetric rocking curve (RC) ω/2θ scans of (0002) plane as x = 0.29. PL spectrum of sample has shown sharp and intense band edge emission of GaN without the existence of yellow emission band, showing that it is comparable in crystal quality of the sample when compared with previous reports. From the Raman measurement of as-grown Al0.29Ga0.71N layer on GaN/AlN/Si sample. We found that the dominant E2 (high) phonon mode of GaN appears at 572.7 cm-1. The E2 (high) mode of AlN appears at 656.7 cm-1 and deviates from the standard value of 655 cm-1 for unstrained AlN. Finally, AlGaN Schottky photodiode have been fabricated and analyzed by mean of electrical characterization, using current-voltage (I-V) measurement to evaluate the performance of this device.

  7. A PWR Thorium Pin Cell Burnup Benchmark

    Energy Technology Data Exchange (ETDEWEB)

    Weaver, Kevan Dean; Zhao, X.; Pilat, E. E; Hejzlar, P.

    2000-05-01

    As part of work to evaluate the potential benefits of using thorium in LWR fuel, a thorium fueled benchmark comparison was made in this study between state-of-the-art codes, MOCUP (MCNP4B + ORIGEN2), and CASMO-4 for burnup calculations. The MOCUP runs were done individually at MIT and INEEL, using the same model but with some differences in techniques and cross section libraries. Eigenvalue and isotope concentrations were compared on a PWR pin cell model up to high burnup. The eigenvalue comparison as a function of burnup is good: the maximum difference is within 2% and the average absolute difference less than 1%. The isotope concentration comparisons are better than a set of MOX fuel benchmarks and comparable to a set of uranium fuel benchmarks reported in the literature. The actinide and fission product data sources used in the MOCUP burnup calculations for a typical thorium fuel are documented. Reasons for code vs code differences are analyzed and discussed.

  8. Ideal glass transitions by random pinning

    Science.gov (United States)

    Cammarota, Chiara; Biroli, Giulio

    2012-01-01

    We study the effect of freezing the positions of a fraction c of particles from an equilibrium configuration of a supercooled liquid at a temperature T. We show that within the random first-order transition theory pinning particles leads to an ideal glass transition for a critical fraction c = cK(T) even for moderate supercooling; e.g., close to the Mode-Coupling transition temperature. First we derive the phase diagram in the T - c plane by mean field approximations. Then, by applying a real-space renormalization group method, we obtain the critical properties for |c - cK(T)| → 0, in particular the divergence of length and time scales, which are dominated by two zero-temperature fixed points. We also show that for c = cK(T) the typical distance between frozen particles is related to the static point-to-set length scale of the unconstrained liquid. We discuss what are the main differences when particles are frozen in other geometries and not from an equilibrium configuration. Finally, we explain why the glass transition induced by freezing particles provides a new and very promising avenue of research to probe the glassy state and ascertain, or disprove, the validity of the theories of the glass transition. PMID:22623524

  9. Dynamic behaviour of FBR fuel pin bundles

    International Nuclear Information System (INIS)

    Martin, P.H.; Van Dorsselaere, J.P.; Ravenet, A.

    1990-01-01

    A programme of shock tests on a fast neutron reactor subassembly model (SPX1 geometry) including a complete bundle of fuel pins (dummy elements) is being carried out in the BELIER test facility at Cadarache. The purpose of these tests is: to determine the distribution of dynamic forces applied to the fuel rod clads under the impact conditions encountered in a reactor during a earthquake; to reduce as much as possible the conservatism of the methods presently used for the calculation of those forces. The test programme, now being completed, consists of the following steps: impacts on the mock-up in air with an non-compact bundle (situation of the subassembly at beginning of life (BOL) with clearances within the bundle); impacts under the same conditions but with fluid (water) in the subassembly; impacts on the mock-up in air and with a compacted bundle (simulating the conditions of an end-of-life (EOL) bundle with no clearance within the bundle). The accelerations studied in these tests cover the range encountered in design calculations for the subassembly frequencies in beam mode. (author)

  10. Transverse pinning versus intramedullary pinning in fifth metacarpal's neck fractures: A randomized controlled study with patient-reported outcome.

    Science.gov (United States)

    Galal, Sherif; Safwat, Wael

    2017-01-01

    The 5th metacarpal fractures accounts for 38% of all hand fractures given that the neck is the weakest point in metacarpals, so neck fracture is the most common metacarpal fracture. Surgical fixation is also advocated for such fractures to prevent mal-rotation of the little finger which will lead to fingers overlap in a clenched fist. Various methods are available for fixation of such fractures, like intramedullary & transverse pinning. There are very few reports in the literature comparing both techniques. Authors wanted to compare outcomes and complications of transverse pinning versus intramedullary pinning in fifth metacarpal's neck fractures. A single-center, parallel group, prospective, randomized study was conducted at an academic Level 1 Trauma Center from October 2014 to December 2016. A total of 80 patients with 5th metacarpal's neck fractures were randomized to pinning using either transverse pinning (group A) or intramedullary pinning (group B). Patients were assessed clinically on range of motion, patient-reported outcome using the Quick-DASH (Disabilities of the Arm, Shoulder, and Hand) questionnaire & radiographically. Two blinded observers assessed outcomes. At final follow up for each patient (12 months) the statistically significant differences were observed in operative time, the transverse pinning group showed shorter operative time, as well as complication rate as complications were observed only in intramedullary pinning group. No differences were found in range of motion or the Quick -DASH score. Both techniques are equally safe and effective treatment option for 5th metacarpal's neck fractures. The only difference was shorter operative time & less incidence of complications in transverse pinning group. Level II, Therapeutic study.

  11. SiPM as photon counter for Cherenkov detectors

    International Nuclear Information System (INIS)

    Roy, B.J.; Orth, H.; Schwarz, C.; Wilms, A.; Peters, K.

    2009-01-01

    Silicon photomultipliers (SiPMs) are very new type of photon counting devices that show great promise to be used as detection device in combination with scintillators/ Cherenkov radiators. SiPM is essentially an avalanche photo-diode operated in limited Geiger mode. They have been considered as potential readout devices for DIRC counter of the PANDA detector which is one of the large experiment at FAIR- the new international facility to be built at GSI, Darmstadt. In addition, the potential use of SiPM includes medical diagnosis, fluorescence measurement and high energy physics experiments. The SiPM module is a photon counting device capable of low light level detection. It is essentially an opto-semiconductor device with excellent photon counting capability and possesses great advantages over the conventional PMTs because of low voltage operation and insensitivity to magnetic fields. In many of the high energy physics experiments, the photon sensors are required to operate in high magnetic fields precluding the use of conventional PMTs. This problem can be over come with the use of SiPMs. With this motivation in mind, we have developed a SiPM test facility and have tested several commercially available SiPM for their performance study and comparison with other photon counting devices

  12. Photoresponse analysis of the CMOS photodiodes for CMOS x-ray image sensor

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Young Soo; Ha, Jang Ho; Kim, Han Soo; Yeo, Sun Mok [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2012-11-15

    Although in the short term CMOS active pixel sensors (APSs) cannot compete with the conventionally used charge coupled devices (CCDs) for high quality scientific imaging, recent development in CMOS APSs indicate that CMOS performance level of CCDs in several domains. CMOS APSs possess thereby a number of advantages such as simpler driving requirements and low power operation. CMOS image sensors can be processed in standard CMOS technologies and the potential of on-chip integration of analog and digital circuitry makes them more suitable for several vision systems where system cost is of importance. Moreover, CMOS imagers can directly benefit from on-going technological progress in the field of CMOS technologies. Due to these advantages, the CMOS APSs are currently being investigated actively for various applications such as star tracker, navigation camera and X-ray imaging etc. In most detection systems, it is thought that the sensor is most important, since this decides the signal and noise level. So, in CMOS APSs, the pixel is very important compared to other functional blocks. In order to predict the performance of such image sensor, a detailed understanding of the photocurrent generation in the photodiodes that comprise the CMOS APS is required. In this work, we developed the analytical model that can calculate the photocurrent generated in CMOS photodiode comprising CMOS APSs. The photocurrent calculations and photo response simulations with respect to the wavelength of the incident photon were performed using this model for four types of photodiodes that can be fabricated in standard CMOS process. n{sup +}/p{sup -}sub and n{sup +}/p{sup -}epi/p{sup -}sub photodiode show better performance compared to n{sup -}well/p{sup -}sub and n{sup -}well/p{sup -}epi/p{sup -}sub due to the wider depletion width. Comparing n{sup +}/p{sup -}sub and n{sup +}/p{sup -}epi/p{sup -}sub photodiode, n{sup +}/p{sup -}sub has higher photo-responsivity in longer wavelength because of

  13. Close Proximity Robotic Maneuvering through Flux Pinning Manipulation

    Data.gov (United States)

    National Aeronautics and Space Administration — Non-contacting actuation technology like flux pinning has never been demonstrated in space. The development of a nonphysical joint is critical for maneuvers such as...

  14. Pin failure modeling of the A series CABRI tests

    International Nuclear Information System (INIS)

    Young, M.F.; Portugal, J.L.

    1978-01-01

    The EXPAND pin fialure model, a research tool designed to model pin failure under prompt burst conditions, has been used to predict failure conditions for several of the A series CABRI tests as part of the United States participation in the CABRI Joint Project. The Project is an international program involving France, Germany, England, Japan, and the United States and has the goal of obtaining experimental data relating to the safety of LMFBR's. The A series, designed to simulate high ramp rate TOP conditions, initially utilizes single, fresh UO 2 pins of the PHENIX type in a flowing sodium loop. The pins are preheated at constant power in the CABRI reactor to establish steady state conditions (480 w/cm at the axial peak) and then subjected to a power pulse of 14 ms to 24 ms duration

  15. Progress in fuel pin modelling in the USA

    Energy Technology Data Exchange (ETDEWEB)

    Stephen, J D; Biancheria, A; Leibnitz, D; O' Reilly, B D; Liu, Y Y; Labar, M P; Gneiting, B C [General Electric Company, Sunnyvale, CA (United States)

    1979-12-01

    In the USA, the focus for theoretical fuel pin modeling is the LIFE system. This system of codes, algorithms, criteria and analysis guidelines is intended to provide a common basis for communication amongst the development groups, a reference set of analysis guidelines for design, and eventually a consensus on the state-of-the-art for licensing. The technical objective is to predict the effect of design options on fuel pin performance limits, which include fuel temperature, pin deformation and cladding breach during normal operation and design basis transients. The mechanistic approach to modeling is taken in LIFE to the extent possible. That is, the approach is to describe the key phenomena in sufficient detail to provide a fundamental understanding of their synergistic effect on the fuel pin performance limits.

  16. The treatment of burnable poison pins in LWRWIMS

    International Nuclear Information System (INIS)

    Halsall, M.J.

    1982-12-01

    This report describes an investigation into the modelling approximations normally made when the LWR lattice code LWRWIMS is used for design calculations on assemblies containing burnable poison pins. Parameters investigated include energy group structure, intervals between calculations in MWd/te and spatial subdivision of the poison pins. An estimate is made of the effect of using pin-cell smearing with diffusion theory for the assembly geometry, instead of a more exact heterogeneous transport theory calculation. The influence on reactivity of the minor gadolinium isotopes 152, 154, 156, 158 and 160 in a poison pin dominated by the isotopes 155 and 157 is presented, and finally, recommendations on the use of LWRWIMS for this type of calculation are made. (author)

  17. PIN architecture for ultrasensitive organic thin film photoconductors.

    Science.gov (United States)

    Jin, Zhiwen; Wang, Jizheng

    2014-06-17

    Organic thin film photoconductors (OTFPs) are expected to have wide applications in the field of optical communications, artificial vision and biomedical sensing due to their great advantages of high flexibility and low-cost large-area fabrication. However, their performances are not satisfactory at present: the value of responsivity (R), the parameter that measures the sensitivity of a photoconductor to light, is below 1 AW(-1). We believe such poor performance is resulted from an intrinsic self-limited effect of present bare blend based device structure. Here we designed a PIN architecture for OTFPs, the PIN device exhibits a significantly improved high R value of 96.5 AW(-1). The PIN architecture and the performance the PIN device shows here should represent an important step in the development of OTFPs.

  18. SP-100 Fuel Pin Performance: Results from Irradiation Testing

    Science.gov (United States)

    Makenas, Bruce J.; Paxton, Dean M.; Vaidyanathan, Swaminathan; Marietta, Martin; Hoth, Carl W.

    1994-07-01

    A total of 86 experimental fuel pins with various fuel, liner, and cladding candidate materials have been irradiated in the Experimental Breeder Reactor-II (EBR-II) and the Fast Flux Test Facility (FFTF) reactor as part of the SP-100 fuel pin irradiation testing program. Postirradiation examination results from these fuel pins are key in establishing performance correlations and demonstrating the lifetime and safety of the reactor fuel system. This paper provides a brief description of the in-reactor fuel pin tests and presents the most recent irradiation data on the performance of wrought rhenium (Re) liner material and high density UN fuel at goal burnup of 6 atom percent (at. %). It also provides an overview of the significant variety of other fuel/liner/cladding combinations which were irradiated as part of this program and which may be of interest to more advanced efforts.

  19. Behavior of a bundle of fast fuel pins under irradiation

    International Nuclear Information System (INIS)

    Marbach, G.; Millet, P.; Robert, J.; Languille, A.

    1979-01-01

    In the French design of fuel elements for fast reactors, great deformation of pins can bring about interaction with the hexagonal tube through the spacer wires. The change in such bundles is described here when the diameter of the cladding increases and the outcome of this reaction (bending and ovalization of pins) is calculated with a simplified model. It is shown that the results achieved agree well with the experimental observations [fr

  20. Pin and roller attachment system for ceramic blades

    Science.gov (United States)

    Shaffer, J.E.

    1995-07-25

    In a turbine, a plurality of blades are attached to a turbine wheel by way of a plurality of joints which form a rolling contact between the blades and the turbine wheel. Each joint includes a pin and a pair of rollers to provide rolling contact between the pin and an adjacent pair of blades. Because of this rolling contact, high stress scuffing between the blades and the turbine wheel reduced, thereby inhibiting catastrophic failure of the blade joints. 3 figs.