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Sample records for si pin photodiode

  1. Simulation of Sark Current Increase in Si PIN Photodiode Induced by Neutron Irradiation

    International Nuclear Information System (INIS)

    Wang Zujun; Chen Wei; Zhang Yong; Tang Benqi; Xiao Zhigang; Huang Shaoyao; Liu Minbo; Liu Yinong

    2010-01-01

    The mechanism of dark current increase in Si PIN photodiode induced by neutron irradiation was analyzed. The device physics and neutron irradiation models were presented to simulate dark current in Si PIN photodiode by MEDICI software. The primary regularity of dark current increase in Si PIN photodiode was concluded by neutron irradiation with the energy of 1 MeV and at the fluence of 10 10 -10 14 cm -2 . The simulation results are in agreement with the experimental results from relevant literature. (authors)

  2. Simulations of Si-PIN photodiode based detectors for underground explosives enhanced by ammonium nitrate

    Science.gov (United States)

    Yücel, Mete; Bayrak, Ahmet; Yücel, Esra Barlas; Ozben, Cenap S.

    2018-02-01

    Massive Ammonium Nitrate (NH4-NO3) based explosives buried underground are commonly used in terror attacks. These explosives can be detected using neutron scattering method with some limitations. Simulations are very useful tools for designing a possible detection system for these kind of explosives. Geant4 simulations were used for generating neutrons at 14 MeV energy and tracking them through the scattering off the explosive embedded in soil. Si-PIN photodiodes were used as detector elements in the design for their low costs and simplicity for signal readout electronics. Various neutron-charge particle converters were applied on to the surface of the photodiodes to increase the detection efficiency. Si-PIN photodiodes coated with 6LiF provided the best result for a certain energy interval. Energy depositions in silicon detector from all secondary particles generated including photons were taken into account to generate a realistic background. Humidity of soil, one of the most important parameter for limiting the detection, was also studied.

  3. Performance test of Si PIN photodiode line scanner for thermal neutron detection

    Energy Technology Data Exchange (ETDEWEB)

    Totsuka, Daisuke, E-mail: totsuka@imr.tohoku.ac.jp [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Nihon Kessho Kogaku Co., Ltd., 810-5 Nobe-cho Tatebayashi, Gunma 374-0047 (Japan); Yanagida, Takayuki [New Industry Creation Hatchery Center (NICHe) 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan); Fukuda, Kentaro; Kawaguchi, Noriaki [Tokuyama Corp., 3 Shibuya Shibuya-ku, Tokyo 150-8383 (Japan); Fujimoto, Yutaka [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Pejchal, Jan [Institute of Physics AS CR, Cukrovarnicka 10, Prague 6, 162-53 (Czech Republic); Yokota, Yuui [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Yoshikawa, Akira [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); New Industry Creation Hatchery Center (NICHe) 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan)

    2011-12-11

    Thermal neutron imaging using Si PIN photodiode line scanner and Eu-doped LiCaAlF{sub 6} crystal scintillator has been developed. The pixel dimensions of photodiode are 1.18 mm (width) Multiplication-Sign 3.8 mm (length) with 0.4 mm gap and the module has 192 channels in linear array. The emission peaks of Eu-doped LiCaAlF{sub 6} after thermal neutron excitation are placed at 370 and 590 nm, and the corresponding photon sensitivities of photodiode are 0.04 and 0.34 A/W, respectively. Polished scintillator blocks with a size of 1.18 mm (width) Multiplication-Sign 3.8 mm (length) Multiplication-Sign 5.0 mm (thickness) were wrapped by several layers of Teflon tapes as a reflector and optically coupled to the photodiodes by silicone grease. JRR-3 MUSASI beam line emitting 13.5 meV thermal neutrons with the flux of 8 Multiplication-Sign 10{sup 5} n/cm{sup 2} s was used for the imaging test. As a subject for imaging, a Cd plate was moved at the speed of 50 mm/s perpendicular to the thermal neutron beam. Analog integration time was set to be 416.6 {mu}s, then signals were converted by a delta-sigma A/D converter. After the image processing, we successfully obtained moving Cd plate image under thermal neutron irradiation using PIN photodiode line scanner coupled with Eu-doped LiCaAlF{sub 6} scintillator.

  4. Performance test of Si PIN photodiode line scanner for thermal neutron detection

    International Nuclear Information System (INIS)

    Totsuka, Daisuke; Yanagida, Takayuki; Fukuda, Kentaro; Kawaguchi, Noriaki; Fujimoto, Yutaka; Pejchal, Jan; Yokota, Yuui; Yoshikawa, Akira

    2011-01-01

    Thermal neutron imaging using Si PIN photodiode line scanner and Eu-doped LiCaAlF 6 crystal scintillator has been developed. The pixel dimensions of photodiode are 1.18 mm (width)×3.8 mm (length) with 0.4 mm gap and the module has 192 channels in linear array. The emission peaks of Eu-doped LiCaAlF 6 after thermal neutron excitation are placed at 370 and 590 nm, and the corresponding photon sensitivities of photodiode are 0.04 and 0.34 A/W, respectively. Polished scintillator blocks with a size of 1.18 mm (width)×3.8 mm (length)×5.0 mm (thickness) were wrapped by several layers of Teflon tapes as a reflector and optically coupled to the photodiodes by silicone grease. JRR-3 MUSASI beam line emitting 13.5 meV thermal neutrons with the flux of 8×10 5 n/cm 2 s was used for the imaging test. As a subject for imaging, a Cd plate was moved at the speed of 50 mm/s perpendicular to the thermal neutron beam. Analog integration time was set to be 416.6 μs, then signals were converted by a delta-sigma A/D converter. After the image processing, we successfully obtained moving Cd plate image under thermal neutron irradiation using PIN photodiode line scanner coupled with Eu-doped LiCaAlF 6 scintillator.

  5. Performance test of Si PIN photodiode line scanner for thermal neutron detection

    Czech Academy of Sciences Publication Activity Database

    Totsuka, D.; Yanagida, T.; Fukuda, K.; Kawaguchi, N.; Fujimoto, Y.; Pejchal, Jan; Yokota, Y.; Yoshikawa, A.

    2011-01-01

    Roč. 659, č. 1 (2011), s. 399-402 ISSN 0168-9002 Institutional research plan: CEZ:AV0Z10100521 Keywords : PIN photodiode * line scanner * scintillator * thermal neutron imaging Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.207, year: 2011

  6. Wide Spectral Sensitivity of Monolithic a-SiC:H pi’n/pin Photodiode Outside the Visible Spectrum

    Directory of Open Access Journals (Sweden)

    Manuela Vieira

    2015-10-01

    Full Text Available In this paper, we experimentally demonstrate the use of near-ultraviolet steady state illumination to increase the spectral sensitivity of a double a-SiC/Si pi’n/pin photodiode beyond the visible spectrum (400 nm-880 nm. The concept is extended to implement a 1 by 4 wavelength division multiplexer with channel separation in the visible/near infrared ranges. The device consists of a p-i'(a-SiC:H-n/p-i(a-Si:H-n heterostructure, sandwiched between two transparent contacts. Optoelectronic characterization of the device is presented and shows the feasibility of tailoring the wavelength and bandwidth of a polychromatic mixture of different wavelengths. Results show that the spectral current under steady state ultraviolet irradiation depends strongly on the wavelength of the impinging light, and on the background intensity and irradiation side allowing controlled high-pass filtering properties. If several monochromatic pulsed lights, in the visible/near infrared (VIS/NIR range, separately or in a polychromatic mixture illuminate the device, data shows that, front background enhances the light-to-dark sensitivity of the medium, long and infrared wavelength channels, and quench strongly the low wavelengths channels. Back background has the opposite behavior; it enhances only channel magnitude in short wavelength range and strongly reduces it in the long ones. This nonlinearity provides the possibility for selective tuning of a specific wavelength. A capacitive optoelectronic model supports the experimental results. A numerical simulation is presented.

  7. SiC Avalanche Photodiodes and Arrays Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Aymont Technology, Inc. (Aymont) will demonstrate the feasibility of SiC p-i-n avalanche photodiodes (APD) arrays. Aymont will demonstrate 4 x 4 arrays of 2 mm2 APDs...

  8. Application of PIN photodiodes as radiation detectors

    International Nuclear Information System (INIS)

    Canu, B.; Dolleiser, M.; Peak, L.

    2000-01-01

    Full text: PIN photodiode based detectors have been built, tested and are currently in use as radiation monitors in the Belle experiment at KEK, Japan. The photodiode operates in unbiased mode as a current source attached to an operational amplifier (Burr-Brown OPA 129). The detector has been designed to have an almost linear response over a very wide range of radiation dose. To test the efficiency of these unbiased units, we have measured the response of the same detector for varying bias voltages to an input signal of mono-energetic electrons. As a source of these mono-energetic electrons, we have designed and constructed a high luminosity beta spectrometer. The output pulses were collected using a Hewlett-Packard 54522A sampling oscilloscope. They were then analysed and compared with the results of our own simulation code - as well as with EGS4 software. The experiment shows the efficiency of the unbiased detector is as high as ∼75% of the efficiency of the almost fully depleted unit (with bias voltage 54 Volts)

  9. INVESTIGATION OF ELECTROPHYSICAL PARAMETERS OF SILICON P-I-N PHOTODIODES

    OpenAIRE

    Perevertaylo, V. L.; Popov, V. M.; Pockanevich, O. P.; Tarasenko, L. I.

    2007-01-01

    Electrophysical parameters of test structures formed on high-resistivity silicon during manufacturing of p-i-n photodiodes have been investigated. Using specially constructed MIS test structures the following important electrophysical parameters of Si-SiO2 and Si-SiO2 -Si3 N4 systems characterizing the quality of silicon and semiconductor-insulator interface have been analyzed: surface generation velocity Sg, bulk generation life-time of minority carriers τg , fixed charge Qss and mobile char...

  10. Current Kink and Capacitance Frequency Dispersion in Silicon PIN Photodiodes

    Science.gov (United States)

    Guo, Xia; Feng, Yajie; Liu, Qiaoli; Wang, Huaqiang; Li, Chong; Hu, Zonghai; He, Xiaoying

    2017-09-01

    Silicon PIN photodiodes in the visible wavelength range have been widely applied in aerospace, defense, security, medical, and scientific instruments because of their high sensitivity and low cost. In this paper, the phenomena of the current kink and the capacitance frequency dispersion are observed. Contamination at the p-type Ohmic contact interface is proposed to explain the current kink effect and capacitance frequency dispersion, according to the temperature-dependent I-V measurement results in which trap-assisted tunneling process demonstrated.

  11. An iterative method applied to optimize the design of PIN photodiodes for enhanced radiation tolerance and maximum light response

    Energy Technology Data Exchange (ETDEWEB)

    Cedola, A.P., E-mail: ariel.cedola@ing.unlp.edu.a [Grupo de Estudio de Materiales y Dispositivos Electronicos (GEMyDE), Dpto. Electrotecnia, Facultad de Ingenieria, Universidad Nacional de La Plata, 48 y 116, C.C. 91, La Plata 1900, Buenos Aires (Argentina); Cappelletti, M.A. [Grupo de Estudio de Materiales y Dispositivos Electronicos (GEMyDE), Dpto. Electrotecnia, Facultad de Ingenieria, Universidad Nacional de La Plata, 48 y 116, C.C. 91, La Plata 1900, Buenos Aires (Argentina); Casas, G. [Grupo de Estudio de Materiales y Dispositivos Electronicos (GEMyDE), Dpto. Electrotecnia, Facultad de Ingenieria, Universidad Nacional de La Plata, 48 y 116, C.C. 91, La Plata 1900, Buenos Aires (Argentina); Universidad Nacional de Quilmes, Roque Saenz Pena 352, Bernal 1876, Buenos Aires (Argentina); Peltzer y Blanca, E.L. [Grupo de Estudio de Materiales y Dispositivos Electronicos (GEMyDE), Dpto. Electrotecnia, Facultad de Ingenieria, Universidad Nacional de La Plata, 48 y 116, C.C. 91, La Plata 1900, Buenos Aires (Argentina); Instituto de Fisica de Liquidos y Sistemas Biologicos (IFLYSIB), CONICET - UNLP - CIC, La Plata 1900, Buenos Aires (Argentina)

    2011-02-11

    An iterative method based on numerical simulations was developed to enhance the proton radiation tolerance and the responsivity of Si PIN photodiodes. The method allows to calculate the optimal values of the intrinsic layer thickness and the incident light wavelength, in function of the light intensity and the maximum proton fluence to be supported by the device. These results minimize the effects of radiation on the total reverse current of the photodiode and maximize its response to light. The implementation of the method is useful in the design of devices whose operation point should not suffer variations due to radiation.

  12. Continuous Holdup Measurements with Silicon P-I-N Photodiodes

    International Nuclear Information System (INIS)

    Bell, Z.W.; Oberer, R.B.; Williams, J.A.; Smith, D.E.; Paulus, M.J.

    2002-01-01

    We report on the behavior of silicon P-I-N photodiodes used to perform holdup measurements on plumbing. These detectors differ from traditional scintillation detectors in that no high-voltage is required, no scintillator is used (gamma and X rays are converted directly by the diode), and they are considerably more compact. Although the small size of the diodes means they are not nearly as efficient as scintillation detectors, the diodes' size does mean that a detector module, including one or more diodes, pulse shaping electronics, analog-to-digital converter, embedded microprocessor, and digital interface can be realized in a package (excluding shielding) the size of a pocket calculator. This small size, coupled with only low-voltage power requirement, completely solid-state realization, and internal control functions allows these detectors to be strategically deployed on a permanent basis, thereby reducing or eliminating the need for manual holdup measurements. In this paper, we report on the measurement of gamma and X rays from 235 U and 238 U contained in steel pipe. We describe the features of the spectra, the electronics of the device and show how a network of them may be used to improve estimates of inventory in holdup

  13. Alpha particles spectrometer with photodiode PIN; Espectrometro de particulas alfa con fotodiodo PIN

    Energy Technology Data Exchange (ETDEWEB)

    Chacon R, A.; Hernandez V, R.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidades Academicas de Estudios Nucleares e Ingenieria Electrica, Calle Cipres No. 10, Fracc. La Penuela, 09869 Zacatecas (Mexico); Ramirez G, J. [Instituto Nacional de Estadistica Geografia e Informatica, Direccion General de Innovacion y Tecnologia de Informacion, Av. Heroes de Nacozari Sur 2301, Fracc. Jardines del Parque, 20276 Aguascalientes (Mexico)], e-mail: achruiz@hotmail.com

    2009-10-15

    The radiation propagates in form of electromagnetic waves or corpuscular radiation; if the radiation energy causes ionization in environment that crosses it is considered ionizing radiation. To detect radiation several detectors types are used, if the radiation are alpha particles are used detectors proportional type or trace elements. In this work the design results, construction and tests of an alpha particles spectrometer are presented, which was designed starting from a photodiode PIN type. The system design was simulated with a code for electronic circuits. With results of simulation phase was constructed the electronic phase that is coupled to a multichannel analyzer. The resulting electronic is evaluated analyzing the electronic circuit performance before an alphas triple source and alpha radiation that produce two smoke detectors of domestic use. On the tests phase we find that the system allows obtain, in a multichannel, the pulses height spectrum, with which we calibrate the system. (Author)

  14. Characteristic measurement for femtosecond laser pulses using a GaAs PIN photodiode as a two-photon photovoltaic receiver

    Science.gov (United States)

    Chen, Junbao; Xia, Wei; Wang, Ming

    2017-06-01

    Photodiodes that exhibit a two-photon absorption effect within the spectral communication band region can be useful for building an ultra-compact autocorrelator for the characteristic inspection of optical pulses. In this work, we develop an autocorrelator for measuring the temporal profile of pulses at 1550 nm from an erbium-doped fiber laser based on the two-photon photovoltaic (TPP) effect in a GaAs PIN photodiode. The temporal envelope of the autocorrelation function contains two symmetrical temporal side lobes due to the third order dispersion of the laser pulses. Moreover, the joint time-frequency distribution of the dispersive pulses and the dissimilar two-photon response spectrum of GaAs and Si result in different delays for the appearance of the temporal side lobes. Compared with Si, GaAs displays a greater sensitivity for pulse shape reconstruction at 1550 nm, benefiting from the higher signal-to-noise ratio of the side lobes and the more centralized waveform of the autocorrelation trace. We also measure the pulse width using the GaAs PIN photodiode, and the resolution of the measured full width at half maximum of the TPP autocorrelation trace is 0.89 fs, which is consistent with a conventional second-harmonic generation crystal autocorrelator. The GaAs PIN photodiode is shown to be highly suitable for real-time second-order autocorrelation measurements of femtosecond optical pulses. It is used both for the generation and detection of the autocorrelation signal, allowing the construction of a compact and inexpensive intensity autocorrelator.

  15. Application of PIN photodiodes on the detection of X-rays generated in an electron accelerator

    International Nuclear Information System (INIS)

    Mondragon-Contreras, L.; Ramirez-Jimenez, F.J.; Garcia-Hernandez, J.M.; Torres-Bribiesca, M.A.; Lopez-Callejas, R.; Aguilera-Reyes, E.F.; Pena-Eguiluz, R.; Lopez-Valdivia, H.; Carrasco-Abrego, H.

    2009-01-01

    PIN photodiodes are used in a novel application for the determination, within the energy range from 90 to 485 keV, of the intensity of X-rays generated by an experimental electron accelerator. An easily assembled X-ray monitor has been built with a low-cost PIN photodiode and operational amplifiers. The output voltage signal obtained from this device can be related to the electron beam current and the accelerating voltage of the accelerator in order to estimate the dose rate delivered by bremsstrahlung.

  16. Radiation effects in the Si-PIN detector on the Near Earth Asteroid Rendezvous mission

    CERN Document Server

    Starr, R; Evans, L G; Floyd, S R; McClanahan, T P; Trombka, J I; Goldsten, J O; Maurer, R H; McNutt, R L; Roth, D R

    1999-01-01

    A Si-PIN photodiode is being used as a solar X-ray monitor on the X-ray/gamma-ray spectrometer experiment which is flying on the Near Earth Asteroid Rendezvous spacecraft. Since its launch in February 1996 this photodiode has experienced several brief failures. These anomalies and other performance characteristics will be described. Efforts to reproduce these failures in ground tests with flight spare equipment will also be discussed.

  17. Evaluation of gamma dose effect on PIN photodiode using analytical model

    Science.gov (United States)

    Jafari, H.; Feghhi, S. A. H.; Boorboor, S.

    2018-03-01

    The PIN silicon photodiodes are widely used in the applications which may be found in radiation environment such as space mission, medical imaging and non-destructive testing. Radiation-induced damage in these devices causes to degrade the photodiode parameters. In this work, we have used new approach to evaluate gamma dose effects on a commercial PIN photodiode (BPX65) based on an analytical model. In this approach, the NIEL parameter has been calculated for gamma rays from a 60Co source by GEANT4. The radiation damage mechanisms have been considered by solving numerically the Poisson and continuity equations with the appropriate boundary conditions, parameters and physical models. Defects caused by radiation in silicon have been formulated in terms of the damage coefficient for the minority carriers' lifetime. The gamma induced degradation parameters of the silicon PIN photodiode have been analyzed in detail and the results were compared with experimental measurements and as well as the results of ATLAS semiconductor simulator to verify and parameterize the analytical model calculations. The results showed reasonable agreement between them for BPX65 silicon photodiode irradiated by 60Co gamma source at total doses up to 5 kGy under different reverse voltages.

  18. Switching characteristic and capacitance analysis of a-Si:H pinpin photodiodes for visible range telecommunications

    Science.gov (United States)

    Fantoni, A.; Fernandes, M.; Louro, P.; Vieira, M.

    2016-05-01

    The device under study is an a-SiC:H/a-Si:H pinpin photodiodes produced by PECVD (Plasma Enhanced Chemical Vapour Deposition) and has a structure that consists of a p-i'(a-SiC:H)-n/p-i(a-Si:H)-n heterostructure with low conductivity doped layers. This device structure has been demonstrated useful in optical communications that use the WDM technique to encode multiple signals in the visible light range. We present in this work experimental results about C-V measurements of the device under complex conditions of illumination. Also it is presented an analysis based on the transient response of the device when illuminated by a pulsed light, with and without optical bias superposition. Rising and decaying times of the collected photocurrent will be outlined under the different conditions. A simulation study outlines the role played by each pin substructure on the response speed and gives some hint on the possible optimization of this device.

  19. Pin Photodiodes for Radiation Monitoring and Protection in the Babar Silicon Vertex Tracker

    Science.gov (United States)

    Meyer, T. I.

    We discuss the design, implementation and performance of the radiation monitoring and protection system used by the Silicon Vertex Tracker (SVT) in the BaBar detector. Using 12 reverse-biased PIN photodiodes mounted around the beampipe near the IP, we are able to provide instantaneous radiation dose rates, absorbed dose integrals, and active protection that aborts the circulating beams in the PEP-II storage ring when radiation levels exceed user-defined thresholds. The systems has reliably protected the SVT from excessive radiation damage and has also served as a key diagnostic tool in understanding radiation backgrounds at PEP-II.

  20. Performance Analysis of OCDMA Based on AND Detection in FTTH Access Network Using PIN & APD Photodiodes

    Science.gov (United States)

    Aldouri, Muthana; Aljunid, S. A.; Ahmad, R. Badlishah; Fadhil, Hilal A.

    2011-06-01

    In order to comprise between PIN photo detector and avalanche photodiodes in a system used double weight (DW) code to be a performance of the optical spectrum CDMA in FTTH network with point-to-multi-point (P2MP) application. The performance of PIN against APD is compared through simulation by using opt system software version 7. In this paper we used two networks designed as follows one used PIN photo detector and the second using APD photo diode, both two system using with and without erbium doped fiber amplifier (EDFA). It is found that APD photo diode in this system is better than PIN photo detector for all simulation results. The conversion used a Mach-Zehnder interferometer (MZI) wavelength converter. Also we are study, the proposing a detection scheme known as AND subtraction detection technique implemented with fiber Bragg Grating (FBG) act as encoder and decoder. This FBG is used to encode and decode the spectral amplitude coding namely double weight (DW) code in Optical Code Division Multiple Access (OCDMA). The performances are characterized through bit error rate (BER) and bit rate (BR) also the received power at various bit rate.

  1. Characteristics of fabricated si PIN-type radiation detectors on cooling temperature

    Science.gov (United States)

    Kim, Han Soo; Jeong, Manhee; Kim, Young Soo; Lee, Dong Hun; Cho, Seung Yeon; Ha, Jang Ho

    2015-06-01

    Si PIN photodiode radiation detectors with three different active areas (3×3 mm2, 5×5 mm2, and 10×10 mm2) were designed and fabricated at the Korea Atomic Energy Research Institute (KAERI) for low energy X- and gamma-ray detection. In Si-based semiconductor radiation detectors, one of the noise sources is thermal noise, which degrades their energy resolution performance. In this study, the temperature effects on the energy resolution were investigated using a 3×3 mm2 active area PIN photodiode radiation detector using a Thermoelectric Module (TEM) from room temperature to -23 °C. Energy resolutions from 25 keV auger electrons to 81 keV gamma-ray from a Ba-133 calibration source were measured and compared at every 10 °C interval. At -23 °C, energy resolutions were improved by 15.6% at 25 keV, 4.0% at 31 keV, and 1.2% at 81 keV in comparison with resolutions at room temperature. CsI(Tl)/PIN photodiode radiation detectors were also fabricated for relatively high energy gamma-ray detection. Energy resolutions for Cs-137, Co-60, and Na-22 sources were measured and compared with the spectral responsivity.

  2. Simulation and measurement of total ionizing dose radiation induced image lag increase in pinned photodiode CMOS image sensors

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jing [School of Materials Science and Engineering, Xiangtan University, Hunan (China); State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an (China); Chen, Wei, E-mail: chenwei@nint.ac.cn [State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an (China); Wang, Zujun, E-mail: wangzujun@nint.ac.cn [State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an (China); Xue, Yuanyuan; Yao, Zhibin; He, Baoping; Ma, Wuying; Jin, Junshan; Sheng, Jiangkun; Dong, Guantao [State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an (China)

    2017-06-01

    This paper presents an investigation of total ionizing dose (TID) induced image lag sources in pinned photodiodes (PPD) CMOS image sensors based on radiation experiments and TCAD simulation. The radiation experiments have been carried out at the Cobalt −60 gamma-ray source. The experimental results show the image lag degradation is more and more serious with increasing TID. Combining with the TCAD simulation results, we can confirm that the junction of PPD and transfer gate (TG) is an important region forming image lag during irradiation. These simulations demonstrate that TID can generate a potential pocket leading to incomplete transfer.

  3. Pin-photodiode array for the measurement of fan-beam energy and air kerma distributions of X-ray CT scanners.

    Science.gov (United States)

    Haba, Tomonobu; Koyama, Shuji; Aoyama, Takahiko; Kinomura, Yutaka; Ida, Yoshihiro; Kobayashi, Masanao; Kameyama, Hiroshi; Tsutsumi, Yoshinori

    2016-07-01

    Patient dose estimation in X-ray computed tomography (CT) is generally performed by Monte Carlo simulation of photon interactions within anthropomorphic or cylindrical phantoms. An accurate Monte Carlo simulation requires an understanding of the effects of the bow-tie filter equipped in a CT scanner, i.e. the change of X-ray energy and air kerma along the fan-beam arc of the CT scanner. To measure the effective energy and air kerma distributions, we devised a pin-photodiode array utilizing eight channels of X-ray sensors arranged at regular intervals along the fan-beam arc of the CT scanner. Each X-ray sensor consisted of two plate type of pin silicon photodiodes in tandem - front and rear photodiodes - and of a lead collimator, which only allowed X-rays to impinge vertically to the silicon surface of the photodiodes. The effective energy of the X-rays was calculated from the ratio of the output voltages of the photodiodes and the dose was calculated from the output voltage of the front photodiode using the energy and dose calibration curves respectively. The pin-photodiode array allowed the calculation of X-ray effective energies and relative doses, at eight points simultaneously along the fan-beam arc of a CT scanner during a single rotation of the scanner. The fan-beam energy and air kerma distributions of CT scanners can be effectively measured using this pin-photodiode array. Copyright © 2016 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

  4. Simulation for spectral response of solar-blind AlGaN based p-i-n photodiodes

    Science.gov (United States)

    Xue, Shiwei; Xu, Jintong; Li, Xiangyang

    2015-04-01

    In this article, we introduced how to build a physical model of refer to the device structure and parameters. Simulations for solar-blind AlGaN based p-i-n photodiodes spectral characteristics were conducted in use of Silvaco TCAD, where device structure and parameters are comprehensively considered. In simulation, the effects of polarization, Urbach tail, mobility, saturated velocities and lifetime in AlGaN device was considered. Especially, we focused on how the concentration-dependent Shockley-Read-Hall (SRH) recombination model affects simulation results. By simulating, we analyzed the effects in spectral response caused by TAUN0 and TAUP0, and got the values of TAUN0 and TAUP0 which can bring a result coincides with test results. After that, we changed their values and made the simulation results especially the part under 255 nm performed better. In conclusion, the spectral response between 200 nm and 320 nm of solar-blind AlGaN based p-i-n photodiodes were simulated and compared with test results. We also found that TAUN0 and TAUP0 have a large impact on spectral response of AlGaN material.

  5. A compact, discrete CsI(Tl) scintillator/Si photodiode gamma camera for breast cancer imaging

    Energy Technology Data Exchange (ETDEWEB)

    Gruber, Gregory J. [Univ. of California, Berkeley, CA (United States)

    2000-01-01

    Recent clinical evaluations of scintimammography (radionuclide breast imaging) are promising and suggest that this modality may prove a valuable complement to X-ray mammography and traditional breast cancer detection and diagnosis techniques. Scintimammography, however, typically has difficulty revealing tumors that are less than 1 cm in diameter, are located in the medial part of the breast, or are located in the axillary nodes. These shortcomings may in part be due to the use of large, conventional Anger cameras not optimized for breast imaging. In this thesis I present compact single photon camera technology designed specifically for scintimammography which strives to alleviate some of these limitations by allowing better and closer access to sites of possible breast tumors. Specific applications are outlined. The design is modular, thus a camera of the desired size and geometry can be constructed from an array (or arrays) of individual modules and a parallel hole lead collimator for directional information. Each module consists of: (1) an array of 64 discrete, optically-isolated CsI(Tl) scintillator crystals 3 x 3 x 5 mm3 in size, (2) an array of 64 low-noise Si PIN photodiodes matched 1-to-1 to the scintillator crystals, (3) an application-specific integrated circuit (ASIC) that amplifies the 64 photodiode signals and selects the signal with the largest amplitude, and (4) connectors and hardware for interfacing the module with a motherboard, thereby allowing straightforward computer control of all individual modules within a camera.

  6. A compact, discrete CsI(Tl) scintillator/Si photodiode gamma camera for breast cancer imaging

    International Nuclear Information System (INIS)

    Gruber, Gregory J.

    2000-01-01

    Recent clinical evaluations of scintimammography (radionuclide breast imaging) are promising and suggest that this modality may prove a valuable complement to X-ray mammography and traditional breast cancer detection and diagnosis techniques. Scintimammography, however, typically has difficulty revealing tumors that are less than 1 cm in diameter, are located in the medial part of the breast, or are located in the axillary nodes. These shortcomings may in part be due to the use of large, conventional Anger cameras not optimized for breast imaging. In this thesis I present compact single photon camera technology designed specifically for scintimammography which strives to alleviate some of these limitations by allowing better and closer access to sites of possible breast tumors. Specific applications are outlined. The design is modular, thus a camera of the desired size and geometry can be constructed from an array (or arrays) of individual modules and a parallel hole lead collimator for directional information. Each module consists of: (1) an array of 64 discrete, optically-isolated CsI(Tl) scintillator crystals 3 x 3 x 5 mm 3 in size, (2) an array of 64 low-noise Si PIN photodiodes matched 1-to-1 to the scintillator crystals, (3) an application-specific integrated circuit (ASIC) that amplifies the 64 photodiode signals and selects the signal with the largest amplitude, and (4) connectors and hardware for interfacing the module with a motherboard, thereby allowing straightforward computer control of all individual modules within a camera

  7. Light induced tunnel effect in CNT-Si photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Aramo, C., E-mail: aramo@na.infn.it [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); Ambrosio, M. [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); Bonavolontà, C. [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); Dip. di Scienze Fisiche, Università degli Studi di Napoli “Federico II”, Via Cintia 2, 80126 Napoli (Italy); Boscardin, M. [Centro per Materiali e i Microsistemi Fondazione Bruno Kessler (FBK), Via Sommarive 18, Povo di Trento, 38123 Trento (Italy); Castrucci, P. [INFN, Sezione di Roma “Tor Vergata”, Dip. di Fisica, Università degli Studi di Roma “Tor Vergata”, Via della Ricerca Scientifica 1, 00133 Roma (Italy); Crivellari, M. [Centro per Materiali e i Microsistemi Fondazione Bruno Kessler (FBK), Via Sommarive 18, Povo di Trento, 38123 Trento (Italy); De Crescenzi, M. [INFN, Sezione di Roma “Tor Vergata”, Dip. di Fisica, Università degli Studi di Roma “Tor Vergata”, Via della Ricerca Scientifica 1, 00133 Roma (Italy); De Lisio, C. [INFN, Sezione di Napoli, Via Cintia 2, 80126 Napoli (Italy); Dip. di Scienze Fisiche, Università degli Studi di Napoli “Federico II”, Via Cintia 2, 80126 Napoli (Italy); Fiandrini, E. [INFN, Sezione di Perugia, Dip. di Fisica, Università degli Studi di Perugia, Piazza Università 1, 06100 Perugia (Italy); and others

    2016-07-11

    Negative differential resistance (NDR), for which the current is a decreasing function of the voltage, has been observed in the current–voltage curves of several types of structures. We measured tunnelling current and NDR by illuminating large area heterojunction obtained by growing Multi Wall Carbon Nanotubes on the surface of n-doped Silicon substrate. In the absence of light, the current flow is null until a junction threshold of about 2.4 V is reached, beyond which the dark current flows at room temperature with a very low intensity of few nA. When illuminated, a current of tens nA is observed at a drain voltage of about 1.5 V. At higher voltage the current intensity decreases according to a negative resistance of the order of MΩ. In the following we report details of tunneling photodiode realized and negative resistance characteristics.

  8. Conception and modelling of photo-detection pixels. PIN photodiodes conceived in amorphous silicon for particles detection; Conception et modelisation de pixels de photodetection: Photodiodes PIN en silicium amorphe en vue de leurs utilisations comme detecteurs de particules

    Energy Technology Data Exchange (ETDEWEB)

    Negru, R

    2008-06-15

    The research done has revealed that the a-Si:H is a material ideally suited for the detection of particles, while being resistant to radiation. It also has a low manufacturing cost, is compatible with existing technology and can be deposited over large areas. Thus, despite the low local mobility of charges (30 cm{sup 2}/V/s), a-Si:H is a material of particular interest for manufacturing high-energy particle detection pixels. As a consequence of this, we have studied the feasibility of an experimental pixel stacked structure based on a-Si:H as a basic sensor element for an electromagnetic calorimeter. The structure of such a pixel consists of different components. First, a silicon PIN diode in a-Si:H is fabricated, followed by a bias resistor and a decoupling capacitor. Before such a structure is made and in order to optimize its design, it is essential to have an efficient behavioural model of the various components. Thus, our primary goal was to develop a two-dimensional physical model of the PIN diode using the SILVACO finite element calculation software. This a-Si:H PIN diode two-dimensional physical model allowed us to study the problem of crosstalk between pixels in a matrix structure of detectors. In particular, we concentrated on the leakage current and the current generated in the volume between neighbouring pixels. The successful implementation of this model in SPICE ensures its usefulness in other professional simulators and especially its integration into a complete electronic structure (PIN diode, bias resistor, decoupling capacity and low noise amplifier). Thanks to these modelling tools, we were able to simulate PIN diode structures in a-Si:H with different thicknesses and different dimensions. These simulations have allowed us to predict that the thicker structures are relevant to the design of the pixel detectors for high energy physics. Applications in astronomy, medical imaging and the analysis of the failure of silicon integrated circuits, can

  9. Irradiation project of SiC/SiC fuel pin 'INSPIRE': Status and future plan

    International Nuclear Information System (INIS)

    Kohyama, Akira; Kishimoto, Hirotatsu

    2015-01-01

    After the March 11 Disaster in East-Japan, Research and Development towards Ensuring Nuclear Safety Enhancement for LWR becomes a top priority R and D in nuclear energy policy of Japan. The role of high temperature non-metallic materials, such as SiC/SiC, is becoming important for the advanced nuclear reactor systems. SiC fibre reinforced SiC composite has been recognised to be the most attractive option for the future, now, METI fund based project, INSPIRE, has been launched as 5-year termed project at OASIS in Muroran Institute of Technology aiming at early realisation of this system. INSPIRE is the irradiation project of SiC/SiC fuel pins aiming to accumulate material, thermal, irradiation effect data of NITE-SiC/SiC in BWR environment. Nuclear fuel inserted SiC/SiC fuel pins are planned to be installed in the Halden reactor. The project includes preparing the NITE-SiC/SiC tubes, joining of end caps, preparation of rigs to control the irradiation environment to BWR condition and the instruments to measure the condition of rigs and pins in operation. Also, basic neutron irradiation data will be accumulated by SiC/SiC coupon samples currently under irradiation in BR2. The output from this project may present the potentiality of NITE-SiC/SiC fuel cladding with the first stage fuel-cladding interaction. (authors)

  10. Conception and modelling of photo-detection pixels. PIN photodiodes conceived in amorphous silicon for particles detection

    International Nuclear Information System (INIS)

    Negru, R.

    2008-06-01

    The research done has revealed that the a-Si:H is a material ideally suited for the detection of particles, while being resistant to radiation. It also has a low manufacturing cost, is compatible with existing technology and can be deposited over large areas. Thus, despite the low local mobility of charges (30 cm 2 /V/s), a-Si:H is a material of particular interest for manufacturing high-energy particle detection pixels. As a consequence of this, we have studied the feasibility of an experimental pixel stacked structure based on a-Si:H as a basic sensor element for an electromagnetic calorimeter. The structure of such a pixel consists of different components. First, a silicon PIN diode in a-Si:H is fabricated, followed by a bias resistor and a decoupling capacitor. Before such a structure is made and in order to optimize its design, it is essential to have an efficient behavioural model of the various components. Thus, our primary goal was to develop a two-dimensional physical model of the PIN diode using the SILVACO finite element calculation software. This a-Si:H PIN diode two-dimensional physical model allowed us to study the problem of crosstalk between pixels in a matrix structure of detectors. In particular, we concentrated on the leakage current and the current generated in the volume between neighbouring pixels. The successful implementation of this model in SPICE ensures its usefulness in other professional simulators and especially its integration into a complete electronic structure (PIN diode, bias resistor, decoupling capacity and low noise amplifier). Thanks to these modelling tools, we were able to simulate PIN diode structures in a-Si:H with different thicknesses and different dimensions. These simulations have allowed us to predict that the thicker structures are relevant to the design of the pixel detectors for high energy physics. Applications in astronomy, medical imaging and the analysis of the failure of silicon integrated circuits, can also

  11. Performance of silicon PIN photodiodes at low temperatures and in high magnetic fields

    Czech Academy of Sciences Publication Activity Database

    Wauters, F.; Kraeva, I.S.; Tandecki, M.; Traykov, E.; Van Gorp, S.; Zákoucký, Dalibor; Severijns, N.

    2009-01-01

    Roč. 604, č. 3 (2009), s. 563-567 ISSN 0168-9002 Institutional research plan: CEZ:AV0Z10480505 Keywords : PIN-diode * beta-particle detection * Magnetic field Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.317, year: 2009

  12. Ti doped amorphous carbon (Al/Ti-a:C/p-Si/Al) photodiodes for optoelectronic applications

    Science.gov (United States)

    Aslan, Naim; Koç, Mümin Mehmet; Dere, Ayşegül; Arif, Bilal; Erkovan, Mustafa; Al-Sehemi, Abdullah G.; Al-Ghamdi, Ahmed A.; Yakuphanoglu, Fahrettin

    2018-03-01

    Electrochemical deposition technique was used to fabricate titanium doped amorphous carbon (Ti doped a:C) Al/Ti-a:C/p-Si/Al photodiode. The effects of illumination on the current-voltage (I-V) characteristics of the Al/a:C/p-Si/Al doped Ti diode for optoelectronic applications were investigated. The reverse current of the diode increased with the increasing illumination intensities when the bias voltage was applied. By using the forward bias I-V characteristics, the ideality factor (n) and barrier height (Φb) of Al/Ti-a:C/p-Si photodiode structure was found as 1,84 and 0,50 eV, respectively. In addition, the capacitance-voltage (C-V) and conductance-voltage (G-V) measurements of the diode were studied in the frequency range of 100 kHz-600 kHz. The measured values of the capacitance decreased with the increasing frequency. The photoelectrical properties of Al/Ti-a:C/p-Si/Al device indicates that the photodiode investigated in this paper has great potential to be used in optoelectronic device applications and in industry.

  13. Highly Scalable SiC UV Imager for Earth & Planetary Science, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Commercial silicon carbide (SiC)-based photonic sensors typically use p-i-n photodiode and reversed-biased Avalanche Photodiode (APD) detectors. These...

  14. Improvement of n-ZnO/p-Si photodiodes by embedding of silver nanoparticles

    International Nuclear Information System (INIS)

    Hu, Zhan-Shuo; Hung, Fei-Yi; Chang, Shoou-Jinn; Chen, Kuan-Jen; Tseng, Yi-Wei; Huang, Bohr-Ran; Lin, Bo-Cheng; Chou, Wei-Yang; Chang, Jay

    2011-01-01

    The photo-current of n-ZnO/p-Si heterojunction photodiodes was improved by embedding Ag nanoparticles in the interface (ZnO/nano-P Ag /p-Si), and the ratio between photo- and dark-current increased by about three orders more than that of a n-ZnO/p-Si specimen. The improvement in the photo-current resulted from the light scattering of embedded Ag nanoparticles. The I–V curve of n-ZnO/p-Si degraded after thermal treatment (A-ZnO/p-Si) because the silicon robbed the oxygen from ZnO to form amorphous silicon dioxide and left an oxygen vacancy. Notably, the properties of ZnO/nano-P Ag /p-Si were better in the time-dependent photoresponse under 10 V bias. Ag nanoparticles (15–20 nm) scattered the UV light randomly and increased the probability for the absorption of ZnO to enhance the properties of the photodiode.

  15. Characterization of gallium arsenide X-ray mesa p-i-n photodiodes at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Lioliou, G. [Semiconductor Materials and Devices Laboratory, Department Engineering and Design, Sch. of Engineering and Informatics, University of Sussex, Falmer, Brighton BN1 9QT (United Kingdom); Meng, X.; Ng, J.S. [Department of Electronic & Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom); Barnett, A.M. [Semiconductor Materials and Devices Laboratory, Department Engineering and Design, Sch. of Engineering and Informatics, University of Sussex, Falmer, Brighton BN1 9QT (United Kingdom)

    2016-03-21

    Two GaAs mesa p{sup +}-i-n{sup +} photodiodes intended for photon counting X-ray spectroscopy, having an i layer thickness of 7 μm and diameter of 200 μm, have been characterized electrically, for their responsivity at the wavelength range 580 nm to 980 nm and one of them for its performance at detection of soft X-rays, at room temperature. Dark current and capacitance measurements as a function of applied forward and reverse bias are presented. The results show low leakage current densities, in the range of nA/cm{sup 2} at the maximum internal electric field (22 kV/cm). The unintentional doping concentration of the i layer, calculated from capacitance measurements, was found to be <10{sup 14} cm{sup −3}. Photocurrent measurements were performed under visible and near infrared light illumination for both diodes. The analysis of these measurements suggests the presence of a non-active (dead) layer (0.16 μm thickness) at the p{sup +} side top contact interface, where the photogenerated carriers do not contribute to the photocurrent, possibly due to recombination. One of the diodes, D1, was also characterized as detector for room temperature photon counting X-ray spectroscopy; the best energy resolution achieved (FWHM) at 5.9 keV was 745 eV. The noise analysis of the system, based on spectra obtained at different shaping times and applied reverse biases, showed that the dominant source of noise is the dielectric noise. It was also calculated that there was at least (165±24) eV charge trapping noise at 0 V.

  16. Temperature dependent characterization of gallium arsenide X-ray mesa p-i-n photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Lioliou, G., E-mail: G.Lioliou@sussex.ac.uk; Barnett, A. M. [Semiconductor Materials and Devices Laboratory, Department Engineering and Design, School of Engineering and Informatics, University of Sussex, Falmer, Brighton BN1 9QT (United Kingdom); Meng, X.; Ng, J. S. [Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom)

    2016-03-28

    Electrical characterization of two GaAs p{sup +}-i-n{sup +} mesa X-ray photodiodes over the temperature range 0 °C to 120 °C together with characterization of one of the diodes as an X-ray detector over the temperature range 0 °C to 60 °C is reported as part of the development of photon counting X-ray spectroscopic systems for harsh environments. The randomly selected diodes were fully etched and unpassivated. The diodes were 200 μm in diameter and had 7 μm thick i layers. The leakage current density was found to increase from (3 ± 1) nA/cm{sup −2} at 0 °C to (24.36 ± 0.05) μA/cm{sup −2} at 120 °C for D1 and from a current density smaller than the uncertainty (0.2 ± 1.2) nA/cm{sup −2} at 0 °C to (9.39 ± 0.02) μA/cm{sup −2} at 120 °C for D2 at the maximum investigated reverse bias (15 V). The best energy resolution (FWHM at 5.9 keV) was achieved at 5 V reverse bias, at each temperature; 730 eV at 0 °C, 750 eV at 20 °C, 770 eV at 40 °C, and 840 eV at 60 °C. It was found that the parallel white noise was the main source of the photopeak broadening only when the detector operated at 60 °C, at 5 V, 10 V, and 15 V reverse bias and at long shaping times (>5 μs), whereas the sum of the dielectric noise and charge trapping noise was the dominant source of noise for all the other spectra.

  17. Etude du courant inversé des photodiodes PIN des composés III-V ...

    African Journals Online (AJOL)

    Mots clés : Semi-conducteurs, photodiodes, courant inverse-dopage. Technological applications carry out that materials are very useful, so their studies are essential such as their characteristics (electrical, optical, mechanical, and thermal). The I-V characteristics were studied for photodiodes of III-V compound in reverse ...

  18. Pulse processing CMOS ASIC for Si-strip/PIN detectors

    International Nuclear Information System (INIS)

    Chandratre, V.B.; Sardesai, S.V.; Kataria, S.K.

    2004-01-01

    The paper presents the design of an 8-channel front-end signal processing ASIC for Si-strip detectors with capacitance from 1 to 40 pf. Each channel consists of a charge amplifier, a shaper amplifier (CR-RC 3 ) and a track-hold stage. The channel outputs are connected to an analog multiplexer which is controlled by an external clock for serial readout. The peaking time is adjustable over 500 ns-1.2us in steps by external control. There is provision for changing gain and polarity. The circuit has a power dissipation of 16 mw per channel and is designed to fabricate in 1.2 um CMOS technology. The 0pf noise is ∼400e. The chip has an area of 5 by 5 mm with target package 48 pin CLCC. (author)

  19. X-ray spectrometer with a low-cost SiC photodiode

    Science.gov (United States)

    Zhao, S.; Lioliou, G.; Barnett, A. M.

    2018-04-01

    A low-cost Commercial-Off-The-Shelf (COTS) 4H-SiC 0.06 mm2 UV p-n photodiode was coupled to a low-noise charge-sensitive preamplifier and used as photon counting X-ray spectrometer. The photodiode/spectrometer was investigated at X-ray energies from 4.95 keV to 21.17 keV: a Mo cathode X-ray tube was used to fluoresce eight high-purity metal foils to produce characteristic X-ray emission lines which were used to characterise the instrument. The energy resolution (full width at half maximum, FWHM) of the spectrometer was found to be 1.6 keV to 1.8 keV, across the energy range. The energy linearity of the detector/spectrometer (i.e. the detector's charge output per photon as a function of incident photon energy across the 4.95 keV to 21.17 keV energy range), as well as the count rate linearity of the detector/spectrometer (i.e. number of detected photons as a function of photon fluence at a specific energy) were investigated. The energy linearity of the detector/spectrometer was linear with an error spectrometer was linear with an error spectrometers is attractive for nanosatellite/CubeSat applications (including solar flare monitoring), and for cost sensitive industrial uses.

  20. Double Pin Photodiodes with Two Optical Gate Connections for Light Triggering: A Capacitive Two-phototransistor Model

    Directory of Open Access Journals (Sweden)

    Manuel A. Vieira

    2011-02-01

    Full Text Available Light-activated multiplexer/demultiplexer silicon-carbon devices are analyzed. An electrical model for the device operation is presented and used to compare output signals with experimental data. An algorithm that takes into accounts the voltage and the optical bias controlled sensitivities was developed. The device is a double pi’n/pin a-SiC:H heterostructure with two optical gate connections for light triggering in different spectral regions. Multiple monochromatic pulsed communication channels were transmitted together, each one with a specific bit sequence. The combined optical signal was analyzed by reading out, under different applied voltages and optical bias, the generated photocurrent across the device. Experimental and simulated results show that the output multiplexed signal has a strong nonlinear dependence on the light absorption profile, i.e., on the incident light wavelength, bit rate and intensity under unbalanced light generation of carriers. By switching between positive and negative voltages or by applying an appropriated optical bias wavelength the input channels can be recovered or removed. A capacitive two connected phototransistor model gives insight into the device operation and explains the decode algorithms.

  1. Collective-pinning properties of superconducting a-NbxGe and a-MoxSi films

    International Nuclear Information System (INIS)

    Woerdenweber, R.

    1987-01-01

    This thesis describes a study of superconducting flux pinning in amorphous NbGe and MoSi films of various compositions and thickness. Amorphous NbGe and MoSi alloys belong to the weak-coupling type-II superconductors in the extreme dirty limit. This feature enables to determine several important superconducting parameters from well-known theoretical expressions. It is also responsible for the weak pinning, which is necessary to observe the two-dimensional collective pinning properties according to the Larkin-Ovchinnikov theory. (Auth.)

  2. On the suitability of Peltier cooled Si-PIN detectors in transmission experiments

    International Nuclear Information System (INIS)

    Murty, V.R.K.; Devan, K.R.S.

    2001-01-01

    The performance of a Peltier cooled Si-PIN detector is compared with that for a Freolectric cooled Si(Li) detector, references being made to transmission experiments that evaluate total cross sections at low photon energies. The results of these measurements are discussed. (author)

  3. Improved charge collection of the buried p-i-n a-Si:H radiation detectors

    International Nuclear Information System (INIS)

    Fujieda, I.; Cho, G.; Conti, M.; Drewery, J.; Kaplan, S.N.; Perez-Mendez, V.; Qureshi, S.; Street, R.A.

    1989-09-01

    Charge collection in hydrogenated amorphous silicon (a-Si:H) radiation detectors is improved for high LET particle detection by adding thin intrinsic layers to the usual p-i-n structure. This buried p-i-n structure enables us to apply higher bias and the electric field is enhanced. When irradiated by 5.8 MeV α particles, the 5.7 μm thick buried p-i-n detector with bias 300V gives a signal size of 60,000 electrons, compared to about 20,000 electrons with the simple p-i-n detectors. The improved charge collection in the new structure is discussed. The capability of tailoring the field profile by doping a-Si:H opens a way to some interesting device structures. 17 refs., 7 figs

  4. Epitaxial graphene/SiC Schottky ultraviolet photodiode with orders of magnitude adjustability in responsivity and response speed

    Science.gov (United States)

    Yang, Junwei; Guo, Liwei; Guo, Yunlong; Hu, Weijie; Zhang, Zesheng

    2018-03-01

    A simple optical-electronic device that possesses widescale adjustability in its performance is specially required for realizing multifunctional applications as in optical communication and weak signal detectors. Here, we demonstrate an epitaxial graphene (EG)/n-type SiC Schottky ultraviolet (UV) photodiode with extremely widescale adjustability in its responsivity and response speed. It is found that the response speed of the device can be modulated over seven orders of magnitude from tens of nanoseconds to milliseconds by changing its working bias from 0 to -5 V, while its responsivity can be varied by three orders of magnitude. A 2.18 A/W responsivity is observed at -5 V when a 325 nm laser is irradiated on, corresponding to an external quantum efficiency over 800% ascribed to the trap induced internal gain mechanism. These performances of the EG/SiC Schottky photodiode are far superior to those based on traditional metal/SiC and indicate that the EG/n-type SiC Schottky diode is a good candidate for application in UV photodetection.

  5. On the suitability of P Si-PIN detectors in transmission experiments

    International Nuclear Information System (INIS)

    Murty, V.R.K.; Devan, K.R.S.

    2000-01-01

    There has been considerable interest, in the recent past, in the development of detector technology. In this context, new detectors, especially room temperature operated detectors and inexpensive cooling systems have recently entered the market. These new systems replace the old systems where there are inadequate facilities to operate them to achieve superior performance. Such performance capabilities of different systems, on a comparative basis have not been widely published in the recent past. In this direction, the Peltier cooled detectors have entered the market and are replacing the conventional Si(Li) detectors. In between the conventional Si(Li) detectors and Peltier cooled Si-PIN detectors, the freolectric cooled Si(Li) detectors were also used in Radiation Physics applications. In this paper, the performance of the Peltier cooled Si-PIN detector in comparison with a Freolectric cooled Si(Li) detector has been studied in Transmission experiments to evaluate the total cross sections at low energies and the results are discussed. (author)

  6. Density functional theory study of skyrmion pinning by atomic defects in MnSi

    Science.gov (United States)

    Choi, Hong Chul; Lin, Shi-Zeng; Zhu, Jian-Xin

    2016-03-01

    A magnetic skyrmion observed experimentally in chiral magnets is a topologically protected spin texture. For their unique properties, such as high mobility under current drive, skyrmions have a huge potential for applications in next-generation spintronic devices. Defects naturally occurring in magnets have profound effects on the static and dynamical properties of skyrmions. In this work we study the effect of an atomic defect on a skyrmion by performing the first-principles calculations within the density functional theory, taking MnSi as an example. By substituting one site of Mn or Si with different elements, we can tune the pinning energy. The effects of pinning by an atomic defect can be understood qualitatively within a phenomenological model.

  7. Temperature dependence of commercial 4H-SiC UV Schottky photodiodes for X-ray detection and spectroscopy

    Science.gov (United States)

    Zhao, S.; Lioliou, G.; Barnett, A. M.

    2017-07-01

    Two commercial-off-the-shelf (COTS) 4H-SiC UV photodiodes have been investigated for their suitability as low-cost high temperature tolerant X-ray detectors. Electrical characterisation of the photodiodes which had different active areas (0.06 mm2 and 0.5 mm2) is reported over the temperature range 0 °C to 140 °C together with measurements of the X-ray photocurrents generated when the detectors were illuminated with an 55Fe radioisotope X-ray source. The 0.06 mm2 photodiode was also investigated as a photon counting spectroscopic X-ray detector across the temperature range 0 °C to 100 °C. The depletion widths (at 120 V reverse bias) of the two diodes were found to be 2.3 μm and 4.5 μm, for the 0.06 mm2 and 0.5 mm2 detectors respectively, at 140 °C. Both devices had low leakage currents (temperatures ≤40 °C even at high electric field strengths (500 kV/cm for 0.06 mm2 diode; 267 kV/cm for 0.5 mm2 diode). At 140 °C and similar field strengths (514 kV/cm for 0.06 mm2 diode; 269 kV/cm for 0.5 mm2 diode), the leakage currents of both diodes were temperatures temperatures ≤100 °C with modest energy resolution (1.6 keV FWHM at 5.9 keV at 0 °C; 2.6 keV FWHM at 5.9 keV at 100 °C). Due to their temperature tolerance, wide commercial availability, and the radiation hardness of SiC, such detectors are expected to find utility in future low-cost nanosatellite (cubesat) missions and cost-sensitive industrial applications.

  8. A new type photodiode: p-Si/GaN pn junction in series with GaN/Ag Schottky diode

    Energy Technology Data Exchange (ETDEWEB)

    Yakuphanoglu, F., E-mail: fyhanoglu@firat.edu.tr [Department of Physics, Faculty of Science, Firat University, Elazig (Turkey); Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Shokr, F.S. [Physics Department, Faculty of Science & Arts, King Abdulaziz University, Rabigh (Saudi Arabia); Gupta, R.K., E-mail: ramguptamsu@gmail.com [Department of Chemistry and Kansas Polymer Research Center, Pittsburg State University, Pittsburg (United States); Al-Ghamdi, Ahmed A. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Bin-Omran, S. [Department of Physics and Astronomy, College of Science, King Saud University, Riyadh (Saudi Arabia); Al-Turki, Yusuf [Department of Electrical and Computer Engineering, King Abdulaziz University, Jeddah (Saudi Arabia); El-Tantawy, Farid [Department of Physics, Faculty of Science, Suez Canal University, Ismailia (Egypt)

    2015-11-25

    Large quantities of gallium nitride (GaN) nanoparticles were successfully synthesized via a facile sol-gel approach. X-ray diffraction analysis confirms the polycrystalline nature of the GaN with hexagonal wurtzite structure and lattice constants a = 0.3189 nm and c = 0.5185 nm. The morphology of the GaN film was investigated by field emission scanning electron microscopy. The obtained results indicate that the synthesized GaN nanorods have an average length of around 60 nm and an average diameter of 23 nm. The optical band gap of the GaN film was obtained to be 3.4 eV. The gallium nitride/p-Si Schottky diode was fabricated by thermal evaporation technique on p-silicon. The current–voltage (I–V) characteristics of the fabricated diode was tested under dark and various light intensities. T The diode ideality factor and barrier height were computed using forward bias I–V characteristics of the diode and are found to be 1.66 and 0.53 eV, respectively. The obtained results suggest that the film preparation by sol gel method is fast and simple to prepare GaN based photodiode by according to metal organic deposition methods. - Highlights: • Facile method was used to synthesize GaN powder. • The Al/p-Si/GaN/Ag diode was fabricated using thermal evaporator technique. • Al/p-Si/GaN/Ag diode can be used as a photosensor for optoelectronic applications.

  9. Initial Microstructure Evaluation of a U3Si2 + W Fuel Pin Fabricated Via Arc Melt Gravity Drop Casting

    Science.gov (United States)

    Hoggan, Rita E.; Harp, Jason M.

    2018-02-01

    Injection casting has historically been used to fabricate metallic nuclear fuel on a large scale. Casting of intermetallic fuel forms, such as U3Si2, may be an alternative pathway for fabrication of fuel pins to powder metallurgy. To investigate casting on a small scale, arc melt gravity drop casting was employed to cast a one-off pin of U3Si2 for evaluation as a fabrication method for U3Si2 as a light water reactor fuel. The pin was sectioned and examined via optical microscopy and scanning electron microscopy equipped with energy dispersive x-ray spectroscopy (EDS). Image analysis was used to estimate the volume fraction of phase impurities as well as porosity. The primary phase determined by EDS was U3Si2 with U-O and U-Si-W phase impurities. Unusually high levels of tungsten were observed because of accidental tungsten introduction during arc melting. No significant changes in microstructure were observed after annealing a section of the pin at 800°C for 72 h. The average density of the sectioned specimens was 12.4 g/cm3 measured via Archimedes principle immersion density and He gas displacement.

  10. Process effects on leakage current of Si-PIN neutron detectors with porous microstructure

    International Nuclear Information System (INIS)

    Yu, Baoning; Zhao, Kangkang; Yang, Taotao; Jiang, Yong; Fan, Xiaoqiang; Lu, Min; Han, Jun

    2017-01-01

    Using the technique of Microfabrication, such as deep silicon dry etching, lithography, etc. Si-PIN neutron detectors with porous microstructure have been successfully fabricated. In order to lower the leakage current, the key fabrication processes, including the Al windows opening, deep silicon etching and the porous side wall smoothing, have been optimized. The cross-section morphology and current-voltage characteristics have been measured to evaluate the microfabrication processes. With the optimized conditions presented by the measurements, a neutron detector with a leakage current density of 2.67 μA cm -2 at a bias of -20 V is obtained. A preliminary neutron irradiation test with 252 Cf neutron source has also been carried out. The neutron irradiation test shows that the neutron detection efficiency of the microstructured neutron detectors is almost 3.6 times higher than that of the planar ones. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Noise in a-Si:H p-i-n detector diodes

    International Nuclear Information System (INIS)

    Cho, G.; Qureshi, S.; Drewery, J.S.; Jing, T.; Kaplan, S.N.; Lee, H.; Mireshghi, A.; Perez-Mendez, V.; Wildermuth, D.

    1991-10-01

    Noise of a-Si:H p-i-n diodes (5 ∼ 50 μm thick) under reverse bias was investigated. The current dependent 1/f type noise was found to be the main noise component at high bias. At low bias the thermal noise from a series resistance of the p-layer and of the metallic contacts is the dominant noise source which is unrelated to the reverse current through the diode. The noise associated with the p-layer resistance decreased significantly on annealing under reverse bias, reducing the total zero bias noise by a factor 2 approximately. The noise recovered to the original value on subsequent annealing without bias. In addition to the resistive noise there seems to be a shaping time independent noise component at zero biased diodes

  12. 11.72 sq cm SiC Wafer-scale Interconnected 64 kA PiN Diode

    Science.gov (United States)

    2012-01-30

    breakdown voltage yield of 83% was achieved. The diodes selected demonstrate sharp onsets of breakdown voltage as illustrated in Fig. 3. Diodes...645-648, pp. 1017-1020, 2010. [2] D. Peters, W. Bartsch , B. Thomas, and R. Sommer, ―6.5 kV SiC PiN Diodes with Improved Forward Characteristics

  13. Transient effects of ionizing radiation in Si, InGaAsP, GaAlSb, and Ge photodiodes

    International Nuclear Information System (INIS)

    Wiczer, J.J.; Barnes, C.E.; Dawson, L.R.

    1980-01-01

    Certain military applications require the continuous operation of optoelectronic information transfer systems during exposure to ionizing radiation. In such an environment the optical detector can be the system element which limits data transmission. We report here the measured electrical and optical characteristics of an irradiation tolerant photodiode fabricated from a double heterojunction structure in the gallium aluminum antimonide (GaAlSb) ternary semiconductor system. A series of tests at Sandia Laboratories' Relativistic Electron Beam Accelerator (REBA) subjected this device and commercially available photodiodes (made from silicon, germanium, and indium gallium arsenide phosphide) to dose rate levels of 10 7 to 10 8 rads/sec. The results of these tests show that the thin GaAlSb double heterojunction photodiode structure generates significantly less unwanted radiation induced current density than that of the next best commercial device

  14. Microcrystalline GaN film grown on Si(1 0 0) and its application to MSM photodiode

    International Nuclear Information System (INIS)

    Hassan, Z.; Lee, Y.C.; Yam, F.K.; Abdullah, M.J.; Ibrahim, K.; Kordesch, M.E.

    2004-01-01

    The properties and application of gallium nitride (GaN) films grown on silicon at a low temperature (873 K) by electron cyclotron resonance (ECR) plasma-assisted metalorganic chemical vapor deposition (MOCVD) were investigated. Structural analysis revealed microcrystalline structure (μc-GaN) with crystallite size of 167 nm for these smooth and transparent films. Ni/μc-GaN metal-semiconductor-metal (MSM) photodiode have been fabricated and analyzed by means of electrical characterization, using current-voltage (I-V) and capacitance-voltage (C-V) measurements to evaluate the Schottky contact parameters for the study of current transport mechanism of the MSM photodiode. The barrier height phi b determined from the C-V method is 0.734 eV

  15. Process effects on leakage current of Si-PIN neutron detectors with porous microstructure

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Baoning; Zhao, Kangkang; Yang, Taotao [Beijing University of Technology, Chaoyang District, Pingleyuan 100, 100124 Beijing (China); Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Jiang, Yong; Fan, Xiaoqiang [Institute of Nuclear Physics and Chemistry, CAEP, Mianshan Road 64, 621900 Mianyang (China); Lu, Min [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Han, Jun [Beijing University of Technology, Chaoyang District, Pingleyuan 100, 100124 Beijing (China)

    2017-06-15

    Using the technique of Microfabrication, such as deep silicon dry etching, lithography, etc. Si-PIN neutron detectors with porous microstructure have been successfully fabricated. In order to lower the leakage current, the key fabrication processes, including the Al windows opening, deep silicon etching and the porous side wall smoothing, have been optimized. The cross-section morphology and current-voltage characteristics have been measured to evaluate the microfabrication processes. With the optimized conditions presented by the measurements, a neutron detector with a leakage current density of 2.67 μA cm{sup -2} at a bias of -20 V is obtained. A preliminary neutron irradiation test with {sup 252}Cf neutron source has also been carried out. The neutron irradiation test shows that the neutron detection efficiency of the microstructured neutron detectors is almost 3.6 times higher than that of the planar ones. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Energy dispersive X-ray fluorescence from useless tyres samples with a Si PIN detector

    International Nuclear Information System (INIS)

    Lopes, Fabio; Scheibel, Viviane; Melquiades, Fabio Luiz; Moraes, Liz Mary Bueno de

    2005-01-01

    The concentration of Zn from discard tyre samples is of environmental interest, since on its production are used S for the rubber vulcanization process, and Zn O as reaction catalyze. The useless tyres are been used for asphalt pave, burn in cement industry and thermoelectric power plant and in erosion control of agriculture areas. Analyses of these samples requires frequently chemical digestion that is expensive and take a long time. Trying to eliminate these limitations, the objective of this work was use Energy Dispersive X Ray Fluorescence technique (EDXRF) with a portable system as the technique is multi elementary and needs a minimum sample preparation. Five useless tyres samples were grind in a knife mill and after this in a cryogenic mill, and analyzed in pellets form, using a X ray mini tube (Ag target, Mo l ter, 25 kV/20 A ) for 200 s and a Si-PIN semiconductor detector coupled to a multichannel analyzer. Were obtained Zn concentrations in the range of 40.6 to 44.2 g g 1 , representing nearly 0.4. (author)

  17. Electrically modulated lateral photovoltage in μc-SiOx:H/a-Si:H/c-Si p-i-n structure at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jihong; Qiao, Shuang, E-mail: sqiao@hbu.edu.cn; Wang, Jianglong; Wang, Shufang, E-mail: sfwang@hbu.edu.cn; Fu, Guangsheng

    2017-04-15

    Graphical abstract: In this paper, the temperature dependence of the LPE has been experimentally studied under illumination of different lasers ranging from visible to infrared for the μc-SiOx:H/a-Si:H/c-Si p-i-n structure. It was found that the position sensitivity increases nearly linearly with wavelength from 405 nm to 980 nm in the whole temperature range, and the saturated position sensitivity decreased quickly from 32.4 mV/mm to a very low value of 1.26 mV/mm and the nonlinearity improved from 7.01% to 3.54% with temperature decreasing from 296 K to 80 K for 532 nm laser illumination. By comparing the experiment results of μc-SiOx:H/a-Si:H/c-Si and ITO/c-Si, it is suggest that the position sensitivity was mainly determined by the temperature-dependent SB and the nonlinearity was directly related to the decreased resistivity of conductive layer. When an external bias voltage was applied, the LPE improved greatly and the position sensitivity of 361.35 mV/mm under illumination of 80 mW at 80 K is 286.7 times as large as that without biased voltage. More importantly, both the position sensitivity and the nonlinearity were independent of temperature again, which can be ascribed to the large constant transmission probability and diffusion length induced by the greatly increased SB. Our research provides an essential insight on the bias voltage-modulated LPE at different temperatures, and this temperature-independent greatly improved LPE is thought to be very useful for developing novel photoelectric devices. - Highlights: • The LPE is proportional to the laser wavelength in the whole temperature range. • The LPE decreases gradually with decreasing temperature from 296 K to 80 K. • Nonlinearity of the LPV curve improves a little with decreasing temperature. • The LPE improves dramatically and is independent of temperature with the aid of a bias voltage. - Abstract: The lateral photovoltaic effect (LPE) in μc-SiOx:H/a-Si:H/c-Si p-i-n structure is studied

  18. Calibration of the E Si detector in a DE-E telescope with a ^212Pb pin source

    Science.gov (United States)

    Chan, Ka Pang

    2012-10-01

    In nuclear physics experiments, telescopes composed of two or more large area silicon strip detectors are used to identify charged particles. To use the energy loss method for particle identification, a thin (˜0.065mm) silicon detector (DE) is mounted in front of a thicker E detector (˜1.5 mm). The DE Si detector can be calibrated with 8.785, 6.778, 6.288, 5.685 and 5.423 MeV alpha particles emitted from a ^228Th source. However, this method cannot be used to calibrate the E detector as the alpha particles cannot penetrate the front DE detector. We have developed a method to calibrate the E detector by inserting a small irradiated dowel pin between the two Si detectors. The pin source is electroplated with ^212Pb nuclei which emit alpha particles with 8.785 MeV, 6.090 and 6.051 MeV. Insertion of the dowel pin is designed and guided so that the head of the pin lies near the center of the detector at a distance of 2.72 mm away from the surface of the E detector. In addition to providing two strong alpha peaks for calibrations, the close distance and high pixilation of the E detector allows accurate determination of the front dead layer of the E Si strip detector. This technique has been implemented successfully in calibrating the E Si detectors in the NSCL High Resolution Array (HiRA) consisting of 20 closely pack DE-E-CsI telescopes.

  19. High-voltage 4H-SiC PiN diodes with the etched implant junction termination extension

    Science.gov (United States)

    Li, Juntao; Xiao, Chengquan; Xu, Xingliang; Dai, Gang; Zhang, Lin; Zhou, Yang; Xiang, An; Yang, Yingkun; Zhang, Jian

    2017-02-01

    This paper presents the design and fabrication of an etched implant junction termination extension (JTE) for high-voltage 4H-SiC PiN diodes. Unlike the conventional JTE structure, the proposed structure utilizes multiple etching steps to achieve the optimum JTE concentration range. The simulation results show that the etched implant JTE method can improve the blocking voltage of SiC PiN diodes and also provides broad process latitude for parameter variations, such as implantation dose and activation annealing condition. The fabricated SiC PiN diodes with the etched implant JTE exhibit a highest blocking voltage of 4.5 kV and the forward on-state voltage of 4.6 V at room temperature. These results are of interest for understanding the etched implant method in the fabrication of high-voltage power devices. Project supported by the Science and Technology Development Foundation of China Academy of Engineering Physics (No. 2014A05011) and the Special Foundation of President of China Academy of Engineering Physics (No. 2014-1-100).

  20. Preliminary calculations of stress change of fuel pin using SiC/SiC composites for GFR with changing of thermal conductivity degradation by irradiation

    International Nuclear Information System (INIS)

    Lee, J. K.; Naganuma, M.

    2006-01-01

    Gas cooled Fast Reactor (GFR) is being researched as a candidate concept of Generation IV international Forum. As a main feature of GFR, it should be maintained high temperature and pressure of coolant gas for heat transfer efficiency. Such a demanding environment requires high-temperature-resistant structural materials distinguished from traditional steel material. Consequently, ceramics are promising candidate material of core components. Especially, Silicon Carbide fiber reinforced Silicon Carbide composites (SiC/SiC) have encouraging characteristics such as refractoriness, low activation and toughness. Application of new material to core components must be explained by the viewpoint of engineering validity. Therefore, present study surveyed that current report for mechanical strength and thermal conductivity of SiC/SiC composites. According to the reports, neutron irradiation environment degraded mechanical properties of SiC/SiC composites. To confirm applicability to core components, model of fuel pin using SiC/SiC composites was assumed with feasible mechanical properties. Furthermore, it was calculated and estimated that the stress caused by temperature variation of inner and outer side of assumed model of cladding tube. Stress was calculated by changing of input date such as thickness of cladding tube, temperature variation, thermal conductivity and linear power. In the range of this study, the most important factor was identified as degradation of thermal conductivity by irradiation. It caused a significant stress and limited a geometrical design of fuel pin. It was discussed that the differences of heat transfer between isotropic and anisotropic materials like a metal and composites. These results should be helpful not only to determine a design factor of core component but also to indicate an improvement direction of SiC/SiC composites. Through these work, reliability and safety of GFR will be increased

  1. Simulation of Si P-i-N diodes for use in a positron emission tomography detector module

    International Nuclear Information System (INIS)

    Bailey, M.J.; University of Wollongong, NSW; Rosenfeld, A.; Lerch, M.; Taylor, G.; Heiser, G.

    2000-01-01

    Full text: Current Positron Emission Tomography (PET) systems consist of scintillation crystals optically coupled to photomultiplier tubes with associated electronics used to detect photons generated within the scintillator. The cost of photomultiplier tubes (PMTs) is considerable and is the major factor in the cost of PET systems. It has been suggested that Si P-i-N diodes can replace PMTs and provide Depth of Interaction (DOI) information for improved spatial resolution. Si P-i-N diodes of 25mm x 300μm and 3mm x 300μm cross sectional area were simulated using a 2D Monte Carlo program (PClD V5) from the UNSW photovoltics group. The diffusion lengths were varied from 0.5μm to 5μm and the charge collection characteristics of the diodes were observed. A 400nm monochromatic light source was used for the excitation as an approximation of the mean wavelength output from LSO crystal. The diodes were reverse biased with voltages 40V, 20V and 10V. The optimum diffusion length of up to 2μm and bias voltage of 40V were determined using the electric field, current density, carrier density and potential distribution results. These parameters will be used for the design of a device for optimal charge collection capabilities for the wavelengths encountered in PET applications. Further studies need to be conducted using spectra from LSO rather than a monochromatic source. The response of various Si P-i-N diodes to a monochromatic light source have been modeled in order to design a device for application in a PET detector module for DOI measurements. The charge collection within the first 2μm has been emphasized due to the strong absorption of photons from LSO near the surface.Copyright (2000) Australasian College of Physical Scientists and Engineers in Medicine

  2. Time-of-flight measurements of heavy ions using Si PIN diodes

    Energy Technology Data Exchange (ETDEWEB)

    Strekalovsky, A. O., E-mail: alex.strek@bk.ru; Kamanin, D. V. [Joint Institute for Nuclear Research (Russian Federation); Pyatkov, Yu. V. [National Nuclear Research University MEPhI (Moscow Engineering Physics Institute) (Russian Federation); Kondratyev, N. A.; Zhuchko, V. E. [Joint Institute for Nuclear Research (Russian Federation); Ilić, S. [University of Novi Sad (Serbia); Alexandrov, A. A.; Alexandrova, I. A. [Joint Institute for Nuclear Research (Russian Federation); Jacobs, N. [University of Stellenbosch, Faculty of Military Science, Military Academy (South Africa); Kuznetsova, E. A.; Mishinsky, G. V.; Strekalovsky, O. V. [Joint Institute for Nuclear Research (Russian Federation)

    2016-12-15

    A new off-line timing method for PIN diode signals is presented which allows the plasma delay effect to be suppressed. Velocities of heavy ions measured by the new method are in good agreement within a wide range of masses and energies with velocities measured by time stamp detectors based on microchannel plates.

  3. In vivo evaluation of CaO-SiO2-P2O5-B2O3 glass-ceramics coating on Steinman pins.

    Science.gov (United States)

    Lee, Jae Hyup; Hong, Kug Sun; Baek, Hae-Ri; Seo, Jun-Hyuk; Lee, Kyung Mee; Ryu, Hyun-Seung; Lee, Hyun-Kyung

    2013-07-01

    Surface coating using ceramics improves the bone bonding strength of an implant. We questioned whether a new type of glass-ceramics (BGS-7) coating (CaO-SiO2 -P2 O5 -B2 O3 ) would improve the osseointegration of Steinman pins (S-pins) both biomechanically and histomorphometrically. An in vivo study was performed using rabbits by inserting three S-pins into each iliac bone. The pins were 2.2-mm S-pins with a coating of 30-μm-thick BGS-7 and 550-nm-thick hydroxyapatite (HA), as opposed to an S-pin without coating. A tensile strength test and histomorphometrical evaluation was performed. In the 2-week group, the BGS-7 implant showed a significantly higher tensile strength than the S-pin. In the 4- and 8-week groups, the BGS-7 implants had significantly higher tensile strengths than the S-pins and HA implants. The histomorphometrical study revealed that the BGS-7 implant had a significantly higher contact ratio than the S-pin and HA implants in the 4-week group. The biomechanical and histomorphometrical tests showed that the BGS-7 coating had superior bone bonding properties than the groups without the coating from the initial stage of insertion. The BGS-7 coating of an S-pin will enhance the bone bonding strength, and there might also be an advantage in human bone bonding. © 2013, Copyright the Authors. Artificial Organs © 2013, International Center for Artificial Organs and Transplantation and Wiley Periodicals, Inc.

  4. Fabrication of 4H-SiC PiN diodes without bipolar degradation by improved device processes

    Science.gov (United States)

    Bu, Yuan; Yoshimoto, Hiroyuki; Watanabe, Naoki; Shima, Akio

    2017-12-01

    We developed a simple technology for fabricating bipolar degradation-free 6.5 kV SiC PiN diodes on the basal plane dislocation (BPD)-free areas of commercially available 4H-SiC wafers. In order to suppress process-induced basal plane dislocation, we first investigated the causes of BPD generation during fabrication and then improved the processes. We found that no BPD was induced on a flat Si-face, but a large number of BPDs were concentrated in the mesa edge after high-dose Al ions were implanted [p++ ion implantation (I. I.)] at room temperature (RT) followed by activation annealing. Therefore, we examined new technologies in device processes including (I) long-term high-temperature oxidation after the mesa process to remove etching damage in the mesa edge and (II) reducing the Al dose (p+ I. I.) in the mesa edge to suppress BPD generation. We investigated the effect of the Al dose in the mesa edge on BPD generation and bipolar degradation. The results indicated that no BPD appeared when the dose was lower than 1 × 1015 atoms/cm2 and when long-term high-temperature oxidation was applied after the mesa process. As a result, we successfully fabricated 6.5 kV PiN diodes without bipolar degradation on BPD-free areas. Moreover, the diodes are very stable when applying 270 A/cm2 for over 100 h. Photoluminescence (PL) observation indicated that no BPD was generated during the improved fabrication processes. Besides, the Ir-Vr measurements showed that the breakdown voltage was over 8 kV at RT. The leakage currents are as low as 7.6 × 10-5 mA/cm2 (25 °C) and 6.3 × 10-4 mA/cm2 (150 °C) at 6.5 kV. Moreover, this result is applicable not only for PiN diodes but also for MOSFETs (body diode), IGBTs, thyristors, etc.

  5. GaN full-vertical p-i-n rectifiers employing AlGaN:Si conducting buffer layers on n-SiC substrates

    International Nuclear Information System (INIS)

    Yoo, D.; Limb, J.; Ryou, J.-H.; Lee, W.; Dupuis, R.D.

    2006-01-01

    The development of a full-vertical GaN p-i-n rectifier on a 6H n-type SiC substrate by employing a conducting Al x Ga 1-x N:Si (x=∼0.1) buffer layer scheme is reported. In this vertical configuration, the n contact is made on the backside of the SiC substrate using a Ni/Au metallization scheme. Epitaxial layers are grown by low-pressure metal organic chemical vapor deposition. The Al x Ga 1-x N:Si nucleation layer is proven to provide excellent electrical properties while also acting as a good buffer layer for subsequent GaN growth. The reverse breakdown voltage for a relatively thin 2.5 μm thick i region was found to be over -330 V. The devices also show a low on resistance of R on of 7.5x10 -3 Ω cm 2 . This full-vertical configuration provides the advantage of the reduction of sidewall damage from plasma etching and lower forward resistance due to the reduction of current crowding in the bottom n-type layer

  6. Spectroscopic Ellipsometry Studies of Thin Film a-Si:H/nc-Si:H Micromorph Solar Cell Fabrication in the p-i-n Superstrate Configuration

    Science.gov (United States)

    Huang, Zhiquan

    :H thin films are obtained. The underlying materials for these depositions were newly-deposited intrinsic a-Si:H layers on thermal oxide coated crystalline silicon wafers, designed to simulate specific device configurations. As a result, these growth evolution diagrams can be applied to both p-i-n and n-i-p solar cell optimization. In this thesis, the n-layer growth evolution diagram expressed in terms of hydrogen dilution ratio was applied in correlations with the performance of p-i-n single junction devices in order to optimize these devices. Moreover, ex-situ mapping SE was also employed over the area of multilayer structures in order to achieve better statistics for solar cell optimization by correlating structural parameters locally with small area solar cell performance parameters. In the study of (a-Si:H p-i-n)/(nc-Si:H p-i-n) tandem solar cells, RTSE was successfully applied to monitor the fabrication of the top cell, and efforts to optimize the nanocrystalline p-layer and i-layer of the bottom cell were initiated.

  7. Low power frontend ASIC (Anusuchak) for dosimeter using Si-PIN detector

    International Nuclear Information System (INIS)

    Darad, A.; Chandratre, V.B.

    2010-01-01

    A low power ASIC (Anusuchak) for silicon PIN detector signal processing channel designed for pocket dosimeter in 0.35 μm CMOS process. The ASIC contains two channels one for Beta particle and other for Gamma ray. The channel is a CSA integrated with a shaper, gain stage and comparator with total power consumption of 4.6 mW. The ASIC has gain of 12 mV/fC and can be raised to 29 mV/fC without degrading the noise, power or linearity specification of the channel. The channel has a peaking time of 1.2 μs with baseline recovery within 5.3 μs and noise figure of 420 e- at 0 pF. The noise slope is 17 e-/pF. The ASIC is designed for single supply of 3.3 V for which battery is available. (author)

  8. MFM observations of domain wall creep and pinning effects in amorphous Co{sub x}Si{sub 1-x} films with diluted arrays of antidots

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez-Rodriguez, G [Departamento Fisica, Facultad Ciencias, Universidad de Oviedo, Av. Calvo Sotelo s/n, 33007 Oviedo (Spain); Perez-Junquera, A [Departamento Fisica, Facultad Ciencias, Universidad de Oviedo, Av. Calvo Sotelo s/n, 33007 Oviedo (Spain); Velez, M [Departamento Fisica, Facultad Ciencias, Universidad de Oviedo, Av. Calvo Sotelo s/n, 33007 Oviedo (Spain); Anguita, J V [Instituto de Microelectronica de Madrid, CNM-CSIC, Isaac Newton 8, PTM, Tres Cantos, 28760 Madrid (Spain); Martin, J I [Departamento Fisica, Facultad Ciencias, Universidad de Oviedo, Av. Calvo Sotelo s/n, 33007 Oviedo (Spain); Rubio, H [Departamento Fisica, Facultad Ciencias, Universidad de Oviedo, Av. Calvo Sotelo s/n, 33007 Oviedo (Spain); Alameda, J M [Departamento Fisica, Facultad Ciencias, Universidad de Oviedo, Av. Calvo Sotelo s/n, 33007 Oviedo (Spain)

    2007-05-21

    Magnetic force microscopy (MFM) has been used to analyse the behaviour of domain walls in uniaxial amorphous Co{sub x}Si{sub 1-x} films patterned with diluted arrays of antidots by electron beam lithography. The walls are found to be pinned by the antidot array when the antidot density is high enough along the easy axis. The expansion of reversed nuclei under the influence of the tip stray field has been observed in several consecutive MFM images of the same area, showing how the competition between line tension effects and pinning by the patterned holes governs the creep motion of the 180{sup 0} walls across the array of antidots.

  9. MFM observations of domain wall creep and pinning effects in amorphous CoxSi1-x films with diluted arrays of antidots

    International Nuclear Information System (INIS)

    Rodriguez-Rodriguez, G; Perez-Junquera, A; Velez, M; Anguita, J V; Martin, J I; Rubio, H; Alameda, J M

    2007-01-01

    Magnetic force microscopy (MFM) has been used to analyse the behaviour of domain walls in uniaxial amorphous Co x Si 1-x films patterned with diluted arrays of antidots by electron beam lithography. The walls are found to be pinned by the antidot array when the antidot density is high enough along the easy axis. The expansion of reversed nuclei under the influence of the tip stray field has been observed in several consecutive MFM images of the same area, showing how the competition between line tension effects and pinning by the patterned holes governs the creep motion of the 180 0 walls across the array of antidots

  10. Fabrication of Eu doped CdO [Al/Eu-nCdO/p-Si/Al] photodiodes by perfume atomizer based spray technique for opto-electronic applications

    Science.gov (United States)

    Ravikumar, M.; Ganesh, V.; Shkir, Mohd; Chandramohan, R.; Arun Kumar, K. Deva; Valanarasu, S.; Kathalingam, A.; AlFaify, S.

    2018-05-01

    In this study, thin films of cadmium oxide (CdO) with different concentrations (0, 1, 3, and 5 wt%) of Eu doping were deposited onto Si and glass substrates by a novel and facile spray technique using simple perfume atomizer for the first time. Prepared films were characterized for structural, morphological, optical properties and the photo diode studies, using X-ray diffraction, scanning electron microscope, UV-Vis spectrophotometer, Isbnd V characteristics, and fundamental parameters are reported. All the prepared Eu:CdO films exhibit cubic structure. The preferential orientation is along (200) plane. Scanning electron microscopy study indicates the growth of smooth and pin-hole free films with clusters of homogeneous grains. The values of band gap energy are found to be varying from 2.42 to 2.33 eV for various Eu doping concentration from 0 to 5 wt%. EDAX studies revealed the presence of Eu, Cd and O elements without any other impurities. FTIR spectra showed a peak at 575 cm-1 confirming the stretching mode of Cdsbnd O. The resistivity (ρ), high carrier concentration (n) and carrier mobility (μ) for 3 wt% CdO thin film are found to be 0.452 × 10-3(Ω.cm), 17.82 × 1020 cm-3 and 7.757 cm2/V, respectively. Current-voltage measurements on the fabricated nanostructured Al/Eu-nCdO/p-Si/Al heterojunction device showed a non-linear electric characteristics indicating diode like behaviour.

  11. Contact Metallization and Packaging Technology Development for SiC Bipolar Junction Transistors, PiN Diodes, and Schottky Diodes Designed for Long-Term Operations at 350degreeC

    Science.gov (United States)

    2006-05-01

    for high temperature contacts. A Bipolar Junction Transistor ( BJT ) in 4H-SiC can operate at higher temperatures (300oC) because its operation does not...AFRL-PR-WP-TR-2006-2181 CONTACT METALLIZATION AND PACKAGING TECHNOLOGY DEVELOPMENT FOR SiC BIPOLAR JUNCTION TRANSISTORS , PiN DIODES, AND...SUBTITLE CONTACT METALLIZATION AND PACKAGING TECHNOLOGY DEVELOPMENT FOR SiC BIPOLAR JUNCTION TRANSISTORS , PiN DIODES, AND SCHOTTKY DIODES DESIGNED

  12. Energy-dispersive X-ray fluorescence of discarded tire samples, using a Si-PIN detector; Fluorescencia de raios X por dispersao em energia de amostras de pneus inserviveis com detector de Si-Pin

    Energy Technology Data Exchange (ETDEWEB)

    Lopes, Fabio; Appoloni, C.R., E-mail: bonn@uel.b [Universidade Estadual de Londrina (UEL), PR (Brazil). Dept. de Fisica. Lab. de Fisica Nuclear Aplicada; Melquiades, Fabio L. [Universidade Estadual do Centro Oeste (UNICENTRO), Guarapuava, PR (Brazil). Dept. de Fisica

    2007-07-01

    The determination of zinc concentration in samples of discarded tires is of great environmental interest because the process for manufacturing tyres uses S for rubber vulcanization, and ZnO is the reaction catalyst. Discarded tyres are being used in asphalt paving, in the burning process of thermoelectric and cement industries and also for controlling erosion in agricultural areas. Analysis of tyre samples usually requires chemical digestion which is slow and expensive. Aiming to eliminate those limitations, this work uses energy-dispersive X-ray fluorescence (EDXRF) with a portable equipment, once it is a simultaneous multi-element analytical technique, requiring minimal sample preparation. Five samples of discarded tyres have been ground and analysed in the form of pastilles, using a mini X-ray tube (Ag target, MO filter, 25 kV/20 muA) for 200 s, and a Si-PIN semiconductor detector coupled to a multichannel analyser. Zinc concentrations in the range of 40.6 to 44.2 mug g{sup -1} have been obtained, representing 0.4% of the tire composition, which is below the maximum value (2%) recommended by the European Tyre Recycling Association. Concentrations between 0.15 and 0.52 mug g{sup -1} were obtained for Fe

  13. CMOS front end analog signal readout chip for Si-strip/PIN detectors

    International Nuclear Information System (INIS)

    Chandratre, V.B.; Sardesai, S.V.; Kataria, S.K.

    2001-01-01

    The paper presents the design of an 8-channel front-end chip for Si-strip detectors, ranging in capacitance from 1 to 30 pf. Each channel consists of a charge amplifier, a shaper amplifier (CR-RC 3 ) and a track-hold stage. The channel outputs are connected to an analog multiplexer which is controlled by an external clock for serial readout. The peaking time is adjustable over 250ns-2us in four fixed steps by external control. There is provision for changing gain low/high. A derivative of the chip is also developed for dosimeter application that uses small area diodes as detectors. The circuit has a power dissipation of 6 MW per channel and is designed to fabricate in 1.2um CMOS technology. The Opf noise is ∼400e. The design approach is presented and the results of simulation are shown. (author)

  14. Energy-dispersive X-ray fluorescence of discarded tire samples, using a Si-PIN detector

    International Nuclear Information System (INIS)

    Lopes, Fabio; Appoloni, C.R.; Melquiades, Fabio L.

    2007-01-01

    The determination of zinc concentration in samples of discarded tires is of great environmental interest because the process for manufacturing tyres uses S for rubber vulcanization, and ZnO is the reaction catalyst. Discarded tyres are being used in asphalt paving, in the burning process of thermoelectric and cement industries and also for controlling erosion in agricultural areas. Analysis of tyre samples usually requires chemical digestion which is slow and expensive. Aiming to eliminate those limitations, this work uses energy-dispersive X-ray fluorescence (EDXRF) with a portable equipment, once it is a simultaneous multi-element analytical technique, requiring minimal sample preparation. Five samples of discarded tyres have been ground and analysed in the form of pastilles, using a mini X-ray tube (Ag target, MO filter, 25 kV/20 μA) for 200 s, and a Si-PIN semiconductor detector coupled to a multichannel analyser. Zinc concentrations in the range of 40.6 to 44.2 μg g -1 have been obtained, representing 0.4% of the tire composition, which is below the maximum value (2%) recommended by the European Tyre Recycling Association. Concentrations between 0.15 and 0.52 μg g -1 were obtained for Fe

  15. Ge-on-Si optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Liu Jifeng, E-mail: Jifeng.Liu@Dartmouth.edu [Thayer School of Engineering, Dartmouth College, Hanover, NH 03755 (United States); Camacho-Aguilera, Rodolfo; Bessette, Jonathan T.; Sun, Xiaochen [Microphotonics Center, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Wang Xiaoxin [Thayer School of Engineering, Dartmouth College, Hanover, NH 03755 (United States); Cai Yan; Kimerling, Lionel C.; Michel, Jurgen [Microphotonics Center, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)

    2012-02-01

    Electronic-photonic synergy has become an increasingly clear solution to enhance the bandwidth and improve the energy efficiency of information systems. Monolithic integration of optoelectronic devices is the ideal solution for large-scale electronic-photonic synergy. Due to its pseudo-direct gap behavior in optoelectronic properties and compatibility with Si electronics, epitaxial Ge-on-Si has become an attractive solution for monolithic optoelectronics. In this paper we will review recent progress in Ge-on-Si optoelectronics, including photodetectors, electroabsorption modulators, and lasers. The performance of these devices has been enhanced by band-engineering such as tensile strain and n-type doping, which transforms Ge towards a direct gap material. Selective growth reduces defect density and facilitates monolithic integration at the same time. Ge-on-Si photodetectors have approached or exceeded the performance of their III-V counterparts, with bandwidth-efficiency product > 30 GHz for p-i-n photodiodes and bandwidth-gain product > 340 GHz for avalanche photodiodes. Enhanced Franz-Keldysh effect in tensile-strained Ge offers ultralow energy photonic modulation with < 30 fJ/bit energy consumption and > 100 GHz intrinsic bandwidth. Room temperature optically-pumped lasing as well as electroluminescence has also been achieved from the direct gap transition of band-engineered Ge-on-Si waveguides. These results indicate that band-engineered Ge-on-Si is promising to achieve monolithic active optoelectronic devices on a Si platform.

  16. Origin analysis of expanded stacking faults by applying forward current to 4H-SiC p-i-n diodes

    Science.gov (United States)

    Hayashi, Shohei; Naijo, Takanori; Yamashita, Tamotsu; Miyazato, Masaki; Ryo, Mina; Fujisawa, Hiroyuki; Miyajima, Masaaki; Senzaki, Junji; Kato, Tomohisa; Yonezawa, Yoshiyuki; Kojima, Kazutoshi; Okumura, Hajime

    2017-08-01

    Stacking faults expanded by the application of forward current to 4H-SiC p-i-n diodes were observed using a transmission electron microscope to investigate the expansion origin. It was experimentally confirmed that long-zonal-shaped stacking faults expanded from basal-plane dislocations converted into threading edge dislocations. In addition, stacking fault expansion clearly penetrated into the substrate to a greater depth than the dislocation conversion point. This downward expansion of stacking faults strongly depends on the degree of high-density minority carrier injection.

  17. Depth dependence of Neel wall pinning on amorphous Co {sub x} Si{sub 1-} {sub x} films with diluted arrays of elliptical antidots

    Energy Technology Data Exchange (ETDEWEB)

    Perez-Junquera, A. [Dpto. Fisica, Universidad de Oviedo, c/ Calvo Sotelo s/n, 33007 Oviedo (Spain); Martin, J.I. [Dpto. Fisica, Universidad de Oviedo, c/ Calvo Sotelo s/n, 33007 Oviedo (Spain)]. E-mail: jmartin@condmat.uniovi.es; Anguita, J.V. [Instituto de Microelectronica de Madrid, CNM-CSIC, Isaac Newton 8, PTM, Tres Cantos, 28760 Madrid (Spain); Rodriguez-Rodriguez, G. [Dpto. Fisica, Universidad de Oviedo, c/ Calvo Sotelo s/n, 33007 Oviedo (Spain) and Instituto Nacional del Carbon (INCAR), CSIC, c/Francisco Pintado Fe 26, 33011 Oviedo (Spain); Velez, M. [Dpto. Fisica, Universidad de Oviedo, c/ Calvo Sotelo s/n, 33007 Oviedo (Spain); Rubio, H. [Dpto. Fisica, Universidad de Oviedo, c/ Calvo Sotelo s/n, 33007 Oviedo (Spain); Alvarez-Prado, L.M. [Dpto. Fisica, Universidad de Oviedo, c/ Calvo Sotelo s/n, 33007 Oviedo (Spain); Alameda, J.M. [Dpto. Fisica, Universidad de Oviedo, c/ Calvo Sotelo s/n, 33007 Oviedo (Spain)

    2007-09-15

    Diluted arrays of elliptical antidots have been fabricated by optical lithography, electron beam lithography and plasma etching on amorphous Co{sub 74}Si{sub 26} magnetic films with a well-defined uniaxial anisotropy. The magnetic behavior of two identical antidot arrays but with different hole depth in comparison with film thickness has been studied by transverse magneto-optical Kerr effect. Significant differences appear in the coercivity depending on whether the magnetic film is completely perforated or not, indicating a much more effective domain wall pinning process when the depth of the holes is smaller than the magnetic film thickness.

  18. Studies of neutron irradiation of avalanche photodiodes using sup 2 sup 5 sup 2 Cf

    CERN Document Server

    Musienko, Y; Ruuska, D; Swain, J D

    2000-01-01

    Results on the radiation hardness of photodiodes to fast neutrons are presented. Four photodiodes (three avalanche photodiodes from two manufacturers, and one PIN photodiode) were exposed to neutrons from a sup 2 sup 5 sup 2 Cf source at Oak Ridge National Laboratory. The effects of this radiation on many parameters such as gain, intrinsic dark current, quantum efficiency, noise, capacitance, and voltage and temperature coefficients of the gain for these devices for fluences up to approx 2x10 sup 1 sup 3 neutrons/cm sup 2 are shown and discussed. While degradation of APDs occurred during neutron irradiation, they remained photosensitive devices with gain.

  19. Characterization of various Si-photodiode junction combinations and layout specialities in 0.18µm CMOS and HV-CMOS technologies

    Science.gov (United States)

    Jonak-Auer, I.; Synooka, O.; Kraxner, A.; Roger, F.

    2017-12-01

    With the ongoing miniaturization of CMOS technologies the need for integrated optical sensors on smaller scale CMOS nodes arises. In this paper we report on the development and implementation of different optical sensor concepts in high performance 0.18µm CMOS and high voltage (HV) CMOS technologies on three different substrate materials. The integration process is such that complete modularity of the CMOS processes remains untouched and no additional masks or ion implantation steps are necessary for the sensor integration. The investigated processes support 1.8V and 3V standard CMOS functionality as well as HV transistors capable of operating voltages of 20V and 50V. These processes intrinsically offer a wide variety of junction combinations, which can be exploited for optical sensing purposes. The availability of junction depths from submicron to several microns enables the selection of spectral range from blue to infrared wavelengths. By appropriate layout the contributions of photo-generated carriers outside the target spectral range can be kept to a minimum. Furthermore by making use of other features intrinsically available in 0.18µm CMOS and HV-CMOS processes dark current rates of optoelectronic devices can be minimized. We present TCAD simulations as well as spectral responsivity, dark current and capacitance data measured for various photodiode layouts and the influence of different EPI and Bulk substrate materials thereon. We show examples of spectral responsivity of junction combinations optimized for peak sensitivity in the ranges of 400-500nm, 550-650nm and 700-900nm. Appropriate junction combination enables good spectral resolution for colour sensing applications even without any additional filter implementation. We also show that by appropriate use of shallow trenches dark current values of photodiodes can further be reduced.

  20. Modeling and Simulation of a 5.8kV SiC PiN Diode for Inductive Pulsed Plasma Thruster Applications

    Science.gov (United States)

    Toftul, Alexandra; Hudgins, Jerry L.; Polzin, Kurt A.; Martin, Adam K.

    2014-01-01

    Current ringing in an Inductive Pulsed Plasma Thruster (IPPT) can lead to reduced energy efficiency, excess heating, and wear on circuit components such as capacitors and solid state devices. Clamping off the current using a fast turn-off power diode is an effective way to reduce current ringing and increase energy efficiency. A diode with a shorter reverse recovery time will allow the least amount of current to ring back through the circuit, as well as minimize switching losses. The reverse recovery response of a new 5.8 kilovolt SiC PiN diode from Cree, Inc. in the IPPT plasma drive circuit is investigated using a physicsbased Simulink model, and compared with that of a 5SDF 02D6004 5.5 kilovolt fast-switching Si diode from ABB. Parameter extraction was carried out for each diode using both datasheet specifications and experimental waveforms, in order to most accurately adapt the model to the specific device. Further experimental data will be discussed using a flat-plate IPPT developed at NASA Marshall Space Flight Center and used to verify the simulation results. A final quantitative measure of circuit efficiency will be described for both the Si and SiC diode configuration.

  1. Performance of Ce-doped (La, Gd).sub.2./sub.Si.sub.2./sub.O.sub.7./sub. scintillator with an avalanche photodiode

    Czech Academy of Sciences Publication Activity Database

    Kurosawa, S.; Shishido, T.; Suzuki, A.; Pejchal, Jan; Yokota, Y.; Yoshikawa, A.

    2014-01-01

    Roč. 744, Apr (2014), 30-34 ISSN 0168-9002 Institutional support: RVO:68378271 Keywords : scintillator * Ce-doped (La, Gd) 2 Si 2 O 7 * temperature dependence * APD Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.216, year: 2014

  2. Solar-blind AlxGa1-xN/AlN/SiC photodiodes with a polarization-induced electron filter

    Science.gov (United States)

    Rodak, L. E.; Sampath, A. V.; Gallinat, C. S.; Chen, Y.; Zhou, Q.; Campbell, J. C.; Shen, H.; Wraback, M.

    2013-08-01

    Heterogeneous n-III-nitride/i-p silicon carbide (SiC) photodetectors have been demonstrated that enable the tailoring of the spectral response in the solar blind region below 280 nm. The negative polarization induced charge at the aluminum gallium nitride (AlxGa1-xN)/aluminum nitride (AlN) interface in conjunction with the positive polarization charge at the AlN/SiC interface creates a large barrier to carrier transport across the interface that results in the selective collection of electrons photoexcited to the Γ and L valleys of SiC while blocking the transport of electrons generated in the M valley. In addition, the AlxGa1-xN alloys act as transparent windows that enhance the collection of carriers generated by high energy photons in the fully depleted SiC absorption regions. These two factors combine to create a peak external quantum efficiency of 76% at 242 nm, along with a strong suppression of the long-wavelength response from 260 nm to 380 nm.

  3. Pin care

    Science.gov (United States)

    ... Drugs & Supplements Videos & Tools Español You Are Here: Home → Medical Encyclopedia → Pin care URL of this page: //medlineplus.gov/ency/patientinstructions/000481.htm Pin care To use the sharing features on this page, please enable JavaScript. Broken bones can be fixed in surgery with metal ...

  4. 5.8kV SiC PiN Diode for Switching of High-Efficiency Inductive Pulsed Plasma Thruster Circuits

    Science.gov (United States)

    Toftul, Alexandra; Polzin, Kurt A.; Hudgins, Jerry L.

    2014-01-01

    Inductive Pulsed Plasma Thruster (IPPT) pulse circuits, such as those needed to operate the Pulsed Inductive Thruster (PIT), are required to quickly switch capacitor banks operating at a period of µs while conducting current at levels on the order of at least 10 kA. [1,2] For all iterations of the PIT to date, spark gaps have been used to discharge the capacitor bank through an inductive coil. Recent availability of fast, high-power solid state switching devices makes it possible to consider the use of semiconductor switches in modern IPPTs. In addition, novel pre-ionization schemes have led to a reduction in discharge energy per pulse for electric thrusters of this type, relaxing the switching requirements for these thrusters. [3,4] Solid state switches offer the advantage of greater controllability and reliability, as well as decreased drive circuit dimensions and mass relative to spark gap switches. The use of solid state devices such as Integrated Gate Bipolar Transistors (IGBTs), Gate Turn-off Thyristors (GTOs) and Silicon-Controlled Rectifiers (SCRs) often involves the use of power diodes. These semiconductor devices may be connected antiparallel to the switch for protection from reverse current, or used to reduce power loss in a circuit by clamping off current ringing. In each case, higher circuit efficiency may be achieved by using a diode that is able to transition, or 'switch,' from the forward conducting state ('on' state) to the reverse blocking state ('off' state) in the shortest amount of time, thereby minimizing current ringing and switching losses. Silicon Carbide (SiC) PiN diodes offer significant advantages to conventional fast-switching Silicon (Si) diodes for high power and fast switching applications. A wider band gap results in a breakdown voltage 10 times that of Si, so that a SiC device may have a thinner drift region for a given blocking voltage. [5] This leads to smaller, lighter devices for high voltage applications, as well as reduced

  5. Combined detectors of charged particles based on zinc selenide scintillators and silicon photodiodes

    CERN Document Server

    Ryzhikov, V D; Starzhinskij, N G

    2001-01-01

    combined detectors of charged particles are described based on zinc selenide (Zn Se(Te)) crystals,silicon photodiodes and charges-sensitive amplifiers. Zn Se(Te) scintillators are characterized by high alpha to beta ratio (approx 1.0), good scintillation efficiency (up to 22%),and high radiation stability (up to 100 Mrad),together with good spectral matching with silicon PIN photodiodes. The signal coming from the photodiode in the two modes (photoreceiver and semiconductor detector) differ in the amplitude values and pulse duration, which opens new possibilities for development and application of such combined detectors.

  6. Ruthenium(II) Complex Based Photodiode for Organic Electronic Applications

    Science.gov (United States)

    Tataroglu, A.; Ocaya, R.; Dere, A.; Dayan, O.; Serbetci, Z.; Al-Sehemi, Abdullah G.; Soylu, M.; Al-Ghamdi, Ahmed A.; Yakuphanoglu, F.

    2018-01-01

    In this study, the electrical and photoresponse properties of a photovoltaic device with Ruthenium(II) complex interfacial thin film were investigated. Heteroleptic Ru(II) complex including bidentate and tridentate ligands thin film was coated on n-Si substrate by the spin coating technique. From current-voltage ( I- V) measurements of an Au/Ru(II)/n-Si photodiode, it is observed that the reverse bias current under light is higher than that of the current in the dark. This indicates that the photodiode exhibits a photoconducting characteristic. The transient measurements such as photocurrent, photocapacitance and photoconductance were performed under various illumination conditions. These measurements indicate that the photodiode has a high photoresponsivity. The electrical parameters such as barrier height (Φb), ideality factor ( n) and series resistance ( R s) of the photodiode were determined from the analysis of I- V characteristics. Moreover, the capacitance/conductance-voltage characteristics of the photodiode highly depend on both voltage and frequency. Results show that the heterojunction can be used for various optoelectronic applications.

  7. Cerenkov radiators for photodiodes

    International Nuclear Information System (INIS)

    Toevs, J.W.; Young, C.S.; Zagarino, P.A.; Seno, R.D.

    1982-01-01

    Several materials have been examined for use as Cerenkov converters in front of photodiodes in an effort to find a gamma detector system that has more sensitivity than a Compton detector but makes little sacrifice in bandwidth. Suprasil (fused silica) and UVT Lucite (acrylic) were 10-100 times more sensitive than a Compton detector and provided almost the same bandwidth. Barium fluoride provided almost 1000 times the sensitivity, but with a factor of 3 or 4 reduction in bandwidth. Relative sensitivities are strongly dependent on beam composition; the Cerenkov package is less sensitive to a pure γ-ray beam than to a γ-electron shower beam. Hence, beam composition must be considered in any application of these detectors

  8. Flux pinning properties of B-rich and SiC-doped MgB{sub 2} tapes prepared by in situ PIT two-stage heat-treatment process

    Energy Technology Data Exchange (ETDEWEB)

    Miura, O. [Department of Electrical Engineering, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397 (Japan)], E-mail: osuke@eei.metro-u.ac.jp; Saeki, A.; Tomioka, H.; Ito, D. [Department of Electrical Engineering, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397 (Japan); Harada, N. [Department of Electrical and Electronics Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611 (Japan)

    2007-10-01

    B-rich and SiC-doped MgB{sub 2} tapes were fabricated by a modified in situ PIT method with two-stage heat-treatment, using Mg flakes with little oxide film. Combination of heat-treatment and rolling process brought about a dense MgB{sub 2} core and a strong inter granular connectivity. For all B-rich MgB{sub 2} tapes T{sub c} remained almost 38 K, while T{sub c} decreased for SiC-doped MgB{sub 2} tapes. J{sub c} for B-rich tapes increased systematically in whole magnetic fields with the increase of B composition ratio. The maximum J{sub c} values of 1.8 x 10{sup 5} at 20 K, 0 T and 0.84 x 10{sup 3} A/cm{sup 2} at 3 T were obtained for a specimen with the ratio of Mg:B of 1:2.8. The grain size of B-rich tapes was smaller than that of the stoichiometric one. SiC-doped tapes also achieved J{sub c} enhancement mainly in high-fields. Irreversibility fields increased for both MgB{sub 2} tapes. Analyses based on the single vortex pinning theory revealed two factors contributing to the improvement of J{sub c} for B-rich tapes. One is an increase of the grain boundary density and the other is an enhancement of the elementary pinning force at grain boundaries. On the other hand, for SiC-doped tapes, such factors slightly increased compared to B-rich tapes. It is believed that this difference of flux pinning behavior originates in the different flux pinning mechanism.

  9. Improved bandwidth and quantum efficiency in silicon photodiodes using photon-manipulating micro/nanostructures operating in the range of 700-1060 nm

    Science.gov (United States)

    Cansizoglu, Hilal; Gao, Yang; Ghandiparsi, Soroush; Kaya, Ahmet; Perez, Cesar Bartolo; Mayet, Ahmed; Ponizovskaya Devine, Ekaterina; Cansizoglu, Mehmet F.; Yamada, Toshishige; Elrefaie, Aly F.; Wang, Shih-Yuan; Islam, M. Saif

    2017-08-01

    Nanostructures allow broad spectrum and near-unity optical absorption and contributed to high performance low-cost Si photovoltaic devices. However, the efficiency is only a few percent higher than a conventional Si solar cell with thicker absorption layers. For high speed surface illuminated photodiodes, the thickness of the absorption layer is critical for short transit time and RC time. Recently a CMOS-compatible micro/nanohole silicon (Si) photodiode (PD) with more than 20 Gb/s data rate and with 52 % quantum efficiency (QE) at 850 nm was demonstrated. The achieved QE is over 400% higher than a similar Si PD with the same thickness but without absorption enhancement microstructure holes. The micro/nanoholes increases the QE by photon trapping, slow wave effects and generate a collective assemble of modes that radiate laterally, resulting in absorption enhancement and therefore increase in QE. Such Si PDs can be further designed to enhance the bandwidth (BW) of the PDs by reducing the device capacitance with etched holes in the pin junction. Here we present the BW and QE of Si PDs achievable with micro/nanoholes based on a combination of empirical evidence and device modeling. Higher than 50 Gb/s data rate with greater than 40% QE at 850 nm is conceivable in transceivers designed with such Si PDs that are integrated with photon trapping micro and nanostructures. By monolithic integration with CMOS/BiCMOS integrated circuits such as transimpedance amplifiers, equalizers, limiting amplifiers and other application specific integrated circuits (ASIC), the data rate can be increased to more than 50 Gb/s.

  10. Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Fang-Hsing Wang

    2014-02-01

    Full Text Available In this study, silicon nitride (SiNx thin films were deposited on polyimide (PI substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD system. The gallium-doped zinc oxide (GZO thin films were deposited on PI and SiNx/PI substrates at room temperature (RT, 100 and 200 °C by radio frequency (RF magnetron sputtering. The thicknesses of the GZO and SiNx thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiNx thin films were a working pressure of 800 × 10−3 Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH4 = 20 sccm and NH3 = 210 sccm, respectively. For the GZO/PI and GZO-SiNx/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiNx/PI substrates with thickness of ~1000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiNx/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiNx/PI substrates to fabricate α-Si thin film solar cells, and the solar cells’ properties were also investigated. We had found that substrates to get the optimally solar cells’ efficiency were 200 °C-deposited GZO-SiNx/PI.

  11. Happy Pinning

    DEFF Research Database (Denmark)

    Fausing, Bent

    2012-01-01

    This is about Pinterest, but with a different approach than usual to social networks. Pinterest is an image site par excellence. The images are as Windows that open outwards and also lets us look inwards and displays the soul and heart, the unintentional or pre-conscious desires. Happy Pinning!...

  12. Hybrid Si nanowire/amorphous silicon FETs for large-area image sensor arrays.

    Science.gov (United States)

    Wong, William S; Raychaudhuri, Sourobh; Lujan, René; Sambandan, Sanjiv; Street, Robert A

    2011-06-08

    Silicon nanowire (SiNW) field-effect transistors (FETs) were fabricated from nanowire mats mechanically transferred from a donor growth wafer. Top- and bottom-gate FET structures were fabricated using a doped a-Si:H thin film as the source/drain (s/d) contact. With a graded doping profile for the a-Si:H s/d contacts, the off-current for the hybrid nanowire/thin-film devices was found to decrease by 3 orders of magnitude. Devices with the graded contacts had on/off ratios of ∼10(5), field-effect mobility of ∼50 cm(2)/(V s), and subthreshold swing of 2.5 V/decade. A 2 in. diagonal 160 × 180 pixel image sensor array was fabricated by integrating the SiNW backplane with an a-Si:H p-i-n photodiode.

  13. A photodiode based on PbS nanocrystallites for FYTRONIX solar panel automatic tracking controller

    Science.gov (United States)

    Wageh, S.; Farooq, W. A.; Tataroğlu, A.; Dere, A.; Al-Sehemi, Abdullah G.; Al-Ghamdi, Ahmed A.; Yakuphanoglu, F.

    2017-12-01

    The structural, optical and photoelectrical properties of the fabricated Al/PbS/p-Si/Al photodiode based on PbS nanocrystallites were investigated. The PbS nanocrystallites were characterized by X-ray diffraction (XRD), UV-VIS-NIR, Infrared and Raman spectroscopy. The XRD diffraction peaks show that the prepared PbS nanostructure is in high crystalline state. Various electrical parameters of the prepared photodiode were analyzed from the electrical characteristics based on I-V and C-V-G. The photodiode has a high rectification ratio of 5.85×104 at dark and ±4 V. Moreover, The photocurrent results indicate a strong photovoltaic behavior. The frequency dependence of capacitance and conductance characteristics was attributed to depletion region behavior of the photodiode. The diode was used to control solar panel power automatic tracking controller in dual axis. The fabricated photodiode works as a photosensor to control Solar tracking systems.

  14. Detection of charged particles through a photodiode: design and analysis

    International Nuclear Information System (INIS)

    Angoli, A.; Quirino, L.L.; Hernandez, V.M.; Lopez del R, H.; Mireles, F.; Davila, J.I.; Rios, C.; Pinedo, J.L.

    2006-01-01

    This project develops and construct an charge particle detector mean a pin photodiode array, design and analysis using a silicon pin Fotodiodo that generally is used to detect visible light, its good efficiency, size compact and reduced cost specifically allows to its use in the radiation monitoring and alpha particle detection. Here, so much, appears the design of the system of detection like its characterization for alpha particles where one is reported as alpha energy resolution and detection efficiency. The equipment used in the development of work consists of alpha particle a triple source composed of Am-241, Pu-239 and Cm-244 with 5,55 KBq as total activity, Maestro 32 software made by ORTEC, a multi-channel card Triumph from ORTEC and one low activity electroplated uranium sample. (Author)

  15. Measurement of environmental radioactivity with photo-diode and Imaging Plate

    International Nuclear Information System (INIS)

    Mori, C.; Sumi, T.; Gotoh, S.; Saze, T.; Nishizawa, K.

    2000-01-01

    Measurement of environmental radioactivity with photo-diode (PD) and Imaging Plate (IP) was tired. Commercially available Si PIN type PD's generally have depletion layer thickness more than a few hundred micrometer, which is enough for alpha particle measurement. PD's have various features: being usable in normal temperature, high energy resolution and low cost. Radon daughter nuclides positively charged in atmosphere were collected on the PD surface with negative electric potential and measured the pulse height spectra of alpha-particles from the daughter nuclides of Radon in thorium oxide, uranium ore, granite, and concrete. Counting of alpha-particles with IP was tired. Lead plates usually contain Pb-210 (RaD) and emit alpha-particles from Po-210. The alpha-particles from the plate were counted with PD and the plate was exposed to IP. By adjusting the gradation level on the reading out of the latent image, it was possible to count alpha-particle incident image one by one, and the number per 1 cm 2 was compared with the number of count with PD. (author)

  16. Response of commercial photodiodes for application in alpha spectrometry

    International Nuclear Information System (INIS)

    Ferreira Filho, Alfredo Lopes

    1998-06-01

    The use of semiconductor detector for ionizing radiations spectrometry and dosimetry has been growing in the last years due to its characteristics of fast response, good efficiency for unit of volume and excellent resolution. Since the working principle of a semiconductor detector is identical to that of the semiconductor junctions of commercial electronic devices, a study was carried out on the PIN-photodiodes response, aiming at set up an alpha spectrometry system of low cost and easy acquisition. The tested components have the following characteristics: active area varying between 13.2 and 25 mm 2 , window of thickness equal or lower than 57 mg/cm 2 , depletion area with depth ranging from 10 to 300 μm and junction capacitance of 16 to 20 pF.Am-241, Cm-244, U-233 and Np-237 alpha sources produced by electrodeposition were used to evaluate the response of the devices as a function of the radiation energy. The results have shown a linear response of the photodiodes with the incident alpha particle energy. The resolution varied from 1.6% to 0.45% and the better detection efficiency found was about 7.2. The low cost of the photodiodes and the excellent results obtained at room temperature make such components very attractive for teaching purposes for environmental monitoring. (author)

  17. Spectroscopic amplifier for pin diode; Amplificador espectroscopico para diodo Pin

    Energy Technology Data Exchange (ETDEWEB)

    Alonso M, M. S.; Hernandez D, V. M.; Vega C, H. R., E-mail: bebe.luna_s@hotmail.com [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico)

    2014-10-15

    The photodiode remains the basic choice for the photo-detection and is widely used in optical communications, medical diagnostics and field of corpuscular radiation. In detecting radiation it has been used for monitoring radon and its progeny and inexpensive spectrometric systems. The development of a spectroscopic amplifier for Pin diode is presented which has the following characteristics: canceler Pole-Zero (P/Z) with a time constant of 8 μs; constant gain of 57, suitable for the acquisition system; 4th integrator Gaussian order to waveform change of exponential input to semi-Gaussian output and finally a stage of baseline restorer which prevents Dc signal contribution to the next stage. The operational amplifier used is the TLE2074 of BiFET technology of Texas Instruments with 10 MHz bandwidth, 25 V/μs of slew rate and a noise floor of 17 nv/(Hz)1/2. The integrated circuit has 4 operational amplifiers and in is contained the total of spectroscopic amplifier that is the goal of electronic design. The results show like the exponential input signal is converted to semi-Gaussian, modifying only the amplitude according to the specifications in the design. The total system is formed by the detector, which is the Pin diode, a sensitive preamplifier to the load, the spectroscopic amplifier that is what is presented and finally a pulse height analyzer (Mca) which is where the spectrum is shown. (Author)

  18. Ageing tests of radiation damaged lasers and photodiodes for the CMS experiment at CERN

    CERN Document Server

    Gill, K; Batten, J; Cervelli, G; Grabit, R; Jensen, F; Troska, Jan K; Vasey, F

    2000-01-01

    The effects of thermally accelerated ageing in irradiated and unirradiated 1310 nm InGaAsP edge-emitting lasers and InGaAs p-i-n photodiodes are presented. 40 lasers (20 irradiated) and 30 photodiodes (19 irradiated) were aged for 4000 hours at 80 degrees C. Periodic measurements were made of laser threshold and efficiency, and p-i-n leakage current and photocurrent. There were no sudden failures and there was very little wearout related degradation in either unirradiated or irradiated sample groups. The results suggest that the tested devices have a sufficiently long lifetime to operate for at least 10 years inside the Compact Muon Solenoid experiment despite being exposed to a harsh radiation environment. (19 refs).

  19. Spectroscopic amplifier for pin diode

    International Nuclear Information System (INIS)

    Alonso M, M. S.; Hernandez D, V. M.; Vega C, H. R.

    2014-10-01

    The photodiode remains the basic choice for the photo-detection and is widely used in optical communications, medical diagnostics and field of corpuscular radiation. In detecting radiation it has been used for monitoring radon and its progeny and inexpensive spectrometric systems. The development of a spectroscopic amplifier for Pin diode is presented which has the following characteristics: canceler Pole-Zero (P/Z) with a time constant of 8 μs; constant gain of 57, suitable for the acquisition system; 4th integrator Gaussian order to waveform change of exponential input to semi-Gaussian output and finally a stage of baseline restorer which prevents Dc signal contribution to the next stage. The operational amplifier used is the TLE2074 of BiFET technology of Texas Instruments with 10 MHz bandwidth, 25 V/μs of slew rate and a noise floor of 17 nv/(Hz)1/2. The integrated circuit has 4 operational amplifiers and in is contained the total of spectroscopic amplifier that is the goal of electronic design. The results show like the exponential input signal is converted to semi-Gaussian, modifying only the amplitude according to the specifications in the design. The total system is formed by the detector, which is the Pin diode, a sensitive preamplifier to the load, the spectroscopic amplifier that is what is presented and finally a pulse height analyzer (Mca) which is where the spectrum is shown. (Author)

  20. Symmetric two-coordinate photodiode

    Directory of Open Access Journals (Sweden)

    Dobrovolskiy Yu. G.

    2008-12-01

    Full Text Available The two-coordinate photodiode is developed and explored on the longitudinal photoeffect, which allows to get the coordinate descriptions symmetric on the steepness and longitudinal resistance great exactness. It was shown, that the best type of the coordinate description is observed in the case of scanning by the optical probe on the central part of the photosensitive element. The ways of improvement of steepness and linear of its coordinate description were analyzed.

  1. Dye based photodiodes for solar energy applications

    Science.gov (United States)

    Mensah-Darkwa, K.; Ocaya, R.; Dere, A.; Al-Sehemi, Abdullah G.; Al-Ghamdi, Ahmed A.; Soylu, M.; Gupta, R. K.; Yakuphanoglu, F.

    2017-10-01

    Coumarin (CO) doped methylene blue (MB) organic photo-devices were fabricated. The CO-doped MB (0.00, 0.01, 0.03, 0.05, 0.1 wt% CO) were coated onto the surface of a p-type Si substrate by drop casting method. Some electrical parameters of the devices have been examined by current-voltage ( I- V), capacitance-voltage ( C- V), and conductance-voltage ( G- V) measurements. The fabricated devices had excellent rectifying properties. The diode exhibits a non-ideal diode behavior due to the series resistance and interface layer. The ideality factor, the barrier height, and the series resistance values of the diode as a function of doping and light illumination have been estimated using modified Cheung-Cheung and Norde's method. The highest I photo/ I dark photosensitivity of 5606 was observed for the diode having 0.01 CO doping at 100 mW/cm2 under -3 V. Furthermore, change of capacitance and conductance measurements with frequency is related to the existence of interface states. A maximum power conversion efficiency of 2.4% is estimated for the fabricated devices. The results reveal that coumarin-doped methylene blue/ p-Si heterojunction can be used as a photodiode in optoelectronic applications. It is also usable in low-power photovoltaic applications.

  2. Highly Scalable SiC UV Imager for Earth & Planetary Science, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Commercial silicon carbide (SiC)-based photonic sensors typically use p–i–n photodiode and reversed-biased Avalanche Photodiode (APD) detectors. These...

  3. Investigation of silicon PIN-detector for laser pulse detection

    OpenAIRE

    Chau, Sam

    2004-01-01

    This report has been written at SAAB Bofors Dynamics (SBD) AB in Gothenburg at the department of optronic systems. In military observation operations, a target to hit is chosen by illumination of a laser designator. From the targetpoint laser radiation is reflected on a detector that helps identify the target. The detector is a semiconductor PIN-type that has been investigated in a laboratory environment together with a specially designed laser source. The detector is a photodiode and using p...

  4. The photodiodes response in beta dosimetry

    International Nuclear Information System (INIS)

    Khoury, Helen; Amaral, Ademir; Hazin, Clovis; Melo, Francisco

    1996-01-01

    The response of the photodiodes BPY-12, BPW-34 and SFH-206 is tested for use as beta dosimeters. The results obtained show a dose-response relationships as well as less than 1% of coefficient of variation for the reproducibility of their responses. The photodiode BPY-12 has presented a better response in comparison with the others

  5. Large-signal PIN diode model for ultra-fast photodetectors

    DEFF Research Database (Denmark)

    Krozer, Viktor; Fritsche, C

    2005-01-01

    A large-signal model for PIN photodetector is presented, which can be applied to ultra-fast photodetection and THz signal generation. The model takes into account the tunnelling and avalanche breakdown, which is important for avalanche photodiodes. The model is applied to ultra-fast superlattice ...

  6. Photodiodes based on fullerene semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Voz, C. [Micro and Nano Technology Group (MNT), Departament Enginyeria Electronica, Universitat Politecnica Catalunya, c/ Jordi Girona 1-3 Campus Nord C4, 08034-Barcelona (Spain)], E-mail: cvoz@eel.upc.edu; Puigdollers, J. [Micro and Nano Technology Group (MNT), Departament Enginyeria Electronica, Universitat Politecnica Catalunya, c/ Jordi Girona 1-3 Campus Nord C4, 08034-Barcelona (Spain); Cheylan, S. [ICFO- Institut de Ciencies Fotoniques, Mediterranean Technology Park, Av. del Canal Olimpic s/n, 08860-Castelldefels (Spain); Fonrodona, M.; Stella, M.; Andreu, J. [Solar Energy Group, Departament Fisica Aplicada i Optica, Universitat de Barcelona, Avda. Diagonal 647, 08028-Barcelona (Spain); Alcubilla, R. [Micro and Nano Technology Group (MNT), Departament Enginyeria Electronica, Universitat Politecnica Catalunya, c/ Jordi Girona 1-3 Campus Nord C4, 08034-Barcelona (Spain)

    2007-07-16

    Fullerene thin films have been deposited by thermal evaporation on glass substrates at room temperature. A comprehensive optical characterization was performed, including low-level optical absorption measured by photothermal deflection spectroscopy. The optical absorption spectrum reveals a direct bandgap of 2.3 eV and absorption bands at 2.8 and 3.6 eV, which are related to the creation of charge-transfer excitons. Various photodiodes on indium-tin-oxide coated glass substrates were also fabricated, using different metallic contacts in order to compare their respective electrical characteristics. The influence of a poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) buffer layer between the indium-tin-oxide electrode and the fullerene semiconductor is also demonstrated. These results are discussed in terms of the workfunction for each electrode. Finally, the behaviour of the external quantum efficiency is analyzed for the whole wavelength spectrum.

  7. Scintillation light read-out by thin photodiodes in silicon wells

    CERN Document Server

    Allier, C P; Sarro, P M; Eijk, C W E

    2000-01-01

    Several applications of X-ray and gamma ray imaging detectors, e.g. in medical diagnostics, require millimeter or sub-millimeter spatial resolution and good energy resolution. In order to achieve such features we have proposed a new type of camera, which takes advantage of micromachining technology. It consists of an array of scintillator crystals encapsulated in silicon wells with photodiodes at the bottom. Several parameters of the photodiode need to be optimised: uniformity and efficiency of the light detection, gain, electronic noise and breakdown voltage. In order to evaluate these parameters we have processed 3x3 arrays of 1.8 mm sup 2 , approx 10 mu m thick photodiodes using (1 0 0) wafers etched in a KOH solution. Their optical response at 675 nm wavelength is comparable to that of a 500 mu m thick silicon PIN diode. Their low light detection efficiency is compensated by internal amplification. Several scintillator materials have been positioned in the wells on top of the thin photodiodes, i.e. a 200 ...

  8. Graphene-GaN Schottky Photodiodes

    Data.gov (United States)

    National Aeronautics and Space Administration — Graphene-GaN Schottky Photodiodes is the development of the world's first graphene-based GaN Schottky device that has the potential to achieve a much greater total...

  9. Low-energy X-ray and gamma spectrometry using silicon photodiodes

    International Nuclear Information System (INIS)

    Silva, Iran Jose Oliveira da

    2000-08-01

    The use of semiconductor detectors for radiation detection has increased in recent years due to advantages they present in comparison to other types of detectors. As the working principle of commercially available photodiodes is similar to the semiconductor detector, this study was carried out to evaluate the use of Si photodiodes for low energy x-ray and gamma spectrometry. The photodiodes investigated were SFH-205, SFH-206, BPW-34 and XRA-50 which have the following characteristics: active area of 0,07 cm 2 and 0,25 cm 2 , thickness of the depletion ranging from 100 to 200 μm and junction capacitance of 72 pF. The photodiode was polarized with a reverse bias and connected to a charge sensitive pre-amplifier, followed by a amplifier and multichannel pulse analyzer. Standard radiation source used in this experiment were 241 Am, 109 Cd, 57 Co and 133 Ba. The X-ray fluorescence of lead and silver were also measured through K- and L-lines. All the measurements were made with the photodiodes at room temperature.The results show that the responses of the photodiodes very linear by the x-ray energy and that the energy resolution in FWHM varied between 1.9 keV and 4.4 keV for peaks corresponding to 11.9 keV to 59 keV. The BPW-34 showed the best energy resolution and the lower dark current. The full-energy peak efficiency was also determined and it was observed that the peak efficiency decreases rapidly above 50 keV. The resolution and efficiency are similar to the values obtained with other semiconductor detectors, evidencing that the photodiodes used in that study can be used as a good performance detector for low energy X-ray and gamma spectrometry. (author)

  10. Nuclear fuel pin scanner

    Science.gov (United States)

    Bramblett, Richard L.; Preskitt, Charles A.

    1987-03-03

    Systems and methods for inspection of nuclear fuel pins to determine fiss loading and uniformity. The system includes infeed mechanisms which stockpile, identify and install nuclear fuel pins into an irradiator. The irradiator provides extended activation times using an approximately cylindrical arrangement of numerous fuel pins. The fuel pins can be arranged in a magazine which is rotated about a longitudinal axis of rotation. A source of activating radiation is positioned equidistant from the fuel pins along the longitudinal axis of rotation. The source of activating radiation is preferably oscillated along the axis to uniformly activate the fuel pins. A detector is provided downstream of the irradiator. The detector uses a plurality of detector elements arranged in an axial array. Each detector element inspects a segment of the fuel pin. The activated fuel pin being inspected in the detector is oscillated repeatedly over a distance equal to the spacing between adjacent detector elements, thereby multiplying the effective time available for detecting radiation emissions from the activated fuel pin.

  11. Graphene-pyramid textured silicon heterojunction for sensitive near-infrared light photodiode

    Science.gov (United States)

    Wang, Li; Ren, Zhi-Fei; Wang, Kui-Yuan; He, Shu-Juan; Luo, Lin-Bao

    2017-04-01

    In this study, we report on the fabrication of a near-infrared (NIR) light photodiode, which was constructed by transferring monolayer graphene films onto pyramid textured silicon etched by an aqueous solution method. It is found that the photodiode exhibits an obvious rectification characteristic, with a rectification ratio as high as 1.5  ×  104. What is more, the as-fabricated graphene-pyramid textured silicon Schottky photodiode could function as an efficient light photodetector that was highly sensitive to NIR irradiation with a high on/off ratio, and good reproducibility. In addition, such an NIR photodiode is able to monitor a fast-switching optical signal with a frequency as high as 2000 Hz. The rise/fall times were estimated to be 96/160 µs, respectively, which are comparable to or even higher than other Si nanostructure-based devices. The generality of the above results implies that the present graphene-pyramid textured silicon Schottky photodiode would have possible potential for future optoelectronic device applications.

  12. A Ring-shaped photodiode designed for use in a reflectance pulse oximetry sensor in wireless health monitoring applications

    DEFF Research Database (Denmark)

    Duun, Sune; Haahr, Rasmus Grønbek; Birkelund, Karen

    2010-01-01

    enable very low light-emitting diode (LED) driving currents for the pulse oximeter. The photodiode also have a two layer SiO2/SiN interference filter yielding 98% transmission at the measuring wavelengths, 660 nm and 940 nm, and suppressing other wavelengths down to 50% transmission. The photodiode has...... is demonstrated to work in a laboratory setup with a Ledtronics dual LED with wavelengths of 660 and 940 nm. Using this setup photoplethysmograms which clearly show the cardiovascular cycle have been recorded. The sensor is shown to work very well with low currents of less than 10 mA....

  13. Fuel pin transfer tool

    International Nuclear Information System (INIS)

    Randazza, J. B.

    1984-01-01

    A fuel pin transfer tool has a tubular housing of sufficient length to enable it to be suspended in a body of water in which a fuel pin assembly is submerged with the upper end of the housing above the water and with the tool in vertical alignment with a selected fuel pin from which the lower end of the tool is closely spaced. The housing has a cylinder spaced from its ends in which there is a piston having a tubular piston rod extending slidably through both ends of the cylinder. An actuator, the control for which has first and second positions, is fixed on the upper end of the piston rod and has a member extending freely downwardly therethrough which on short downward travel, resulting when the control is in its second position, effects the pin-releasing position of a latching device secured to the lower end of the piston rod. The pin-releasing position is held until the control is returned to its first position with the latching device held in its pin-gripping position until the control is again in its second position. When the piston is in its low position and the control is in its second position, the selected pin may then be gripped by the latching device when the control is in its first position

  14. PINS Spectrum Identification Guide

    Energy Technology Data Exchange (ETDEWEB)

    A.J. Caffrey

    2012-03-01

    The Portable Isotopic Neutron Spectroscopy—PINS, for short—system identifies the chemicals inside munitions and containers without opening them, a decided safety advantage if the fill chemical is a hazardous substance like a chemical warfare agent or an explosive. The PINS Spectrum Identification Guide is intended as a reference for technical professionals responsible for the interpretation of PINS gamma-ray spectra. The guide is divided into two parts. The three chapters that constitute Part I cover the science and technology of PINS. Neutron activation analysis is the focus of Chapter 1. Chapter 2 explores PINS hardware, software, and related operational issues. Gamma-ray spectral analysis basics are introduced in Chapter 3. The six chapters of Part II cover the identification of PINS spectra in detail. Like the PINS decision tree logic, these chapters are organized by chemical element: phosphorus-based chemicals, chlorine-based chemicals, etc. These descriptions of hazardous, toxic, and/or explosive chemicals conclude with a chapter on the identification of the inert chemicals, e.g. sand, used to fill practice munitions.

  15. Actinide oxide photodiode and nuclear battery

    Energy Technology Data Exchange (ETDEWEB)

    Sykora, Milan; Usov, Igor

    2017-12-05

    Photodiodes and nuclear batteries may utilize actinide oxides, such a uranium oxide. An actinide oxide photodiode may include a first actinide oxide layer and a second actinide oxide layer deposited on the first actinide oxide layer. The first actinide oxide layer may be n-doped or p-doped. The second actinide oxide layer may be p-doped when the first actinide oxide layer is n-doped, and the second actinide oxide layer may be n-doped when the first actinide oxide layer is p-doped. The first actinide oxide layer and the second actinide oxide layer may form a p/n junction therebetween. Photodiodes including actinide oxides are better light absorbers, can be used in thinner films, and are more thermally stable than silicon, germanium, and gallium arsenide.

  16. Energy resolution and light yield non-proportionality of ZnSe Te scintillator studied by large area avalanche photodiodes and photomultipliers

    CERN Document Server

    Balcerzyk, M; Moszynski, M; Kapusta, M; Szawlowski, M

    2002-01-01

    The ZnSe : Te scintillator has been studied by means of a photomultiplier with an extended bialkali photocathode, a large area avalanche photodiode (LAAPD) and a PIN photodiode. The light output was determined to be 28 300+-1700 photons/MeV. Results indicate good proportionality for light output versus gamma-ray energy. Measurements of the 662 keV gamma-ray energy spectrum recorded using a LAAPD resulted in an energy resolution of 5.4+-0.3%. Based on these results, an intrinsic energy resolution of 3.3+-0.7% has been calculated.

  17. Sticky pin mounting

    OpenAIRE

    Lilja, David

    2016-01-01

    The study was conducted at Volvo Arvika were pins sometimes are sticky to mount during assembly of wheel loaders. This causes problems regarding ergonomic, quality, cost and productivity. Due to deviations in tolerances, defects and errors, assemblers are forced to use equipment such as sledgehammers to mount the pins. The purpose of this study is to achieve and assembly process which meets Volvo´s criteria’s. By investigation the flows for frames at Volvo Arvika, defects and errors were disc...

  18. A photodiode based miniature sun sensor

    International Nuclear Information System (INIS)

    Lü, Xiaozhou; Tao, Yebo; Xie, Kai; Wang, Songlin; Li, Xiaoping; Bao, Weimin; Chen, Renjie

    2017-01-01

    The solar vector is one of the most important parameters for attitude control of nanosatellites. This attitude control must be achieved without the sensors adding significantly to its size or mass. This paper presents a photodiode-based miniature sun sensor, which consists of two triangular pyramidal sensor unit structures, with each unit comprising three micro-silicon photodiodes. The two sensor units are installed on the diagonal of the nanosatellite to form a complete sun sensor capable of achieving a full-field range of solar vector measurements. In this paper, the mathematical model of the short-circuit currents of the silicon photodiodes as a function of the solar vector coordinates is deduced. A sensor sample was built and installed on a nanosatellite model, and the temperature compensation coefficient of the silicon photodiodes was obtained experimentally. The dynamic characteristic, linearity, hysteresis and repeatability of the component were measured. The sun sensor introduced in this paper can be placed on any satellite platform to allow a full range solar vector measurement, and this would result in an increase of only 1.86 g and 0.9 cm 3 of the satellite’s mass and volume, respectively. (paper)

  19. Avalanche photodiodes for the CMS electromagnetic calorimeter

    CERN Document Server

    Organtini, G

    1999-01-01

    Avalanche Photodiodes (APDs) will be used as photodetectors for the CMS crystal barrel calorimeter, made of lead tungstate (PWO) scintillating crystals. After two years of strong R&D effort a significant progress was achieved, in collaboration with manufacturers, in the relevant properties of the device for LHC applications. Quantum efficiency, noise contributions and radiation resistance measurements of APDs are presented.

  20. Accelerated aging tests of radiation damaged lasers and photodiodes for the CMS tracker optical links

    CERN Document Server

    Gill, K; Batten, J; Cervelli, G; Grabit, R; Jensen, F; Troska, Jan K; Vasey, F

    1999-01-01

    The combined effects of radiation damage and accelerated ageing in COTS lasers and p-i-n photodiodes are presented. Large numbers of these devices are employed in future High Energy Physics experiments and it is vital that these devices are confirmed to be sufficiently robust in terms of both radiation resistance and reliability. Forty 1310 nm InGaAsP edge-emitting lasers (20 irradiated) and 30 InGaAs p- i-n photodiodes (19 irradiated) were aged for 4000 hours at 80 degrees C with periodic measurements made of laser threshold and efficiency, in addition to p-i-n leakage current and photocurrent. There were no sudden failures and there was very little wearout- related degradation in either unirradiated or irradiated sample groups. The results suggest that the tested devices have a sufficiently long lifetime to operate for at least 10 years inside the Compact Muon Solenoid experiment despite being exposed to a harsh radiation environment. (13 refs).

  1. SiC Avalanche Photodiodes and Arrays, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — In this Phase 2 SBIR program submitted to National Aeronautics and Space Administration (NASA) in response to Topic S1.05 (Detector Technologies for UV, X-Ray,...

  2. PINS-3X Operations

    Energy Technology Data Exchange (ETDEWEB)

    E.H. Seabury

    2013-09-01

    Idaho National Laboratory’s (INL’s) Portable Isotopic Neutron Spectroscopy System (PINS) non-intrusively identifies the chemical fill of munitions and sealed containers. The PINS-3X variant of the system is used to identify explosives and uses a deuterium-tritium (DT) electronic neutron generator (ENG) as the neutron source. Use of the system, including possession and use of the neutron generator and shipment of the system components requires compliance with a number of regulations. This report outlines some of these requirements as well as some of the requirements in using the system outside of INL.

  3. Type-II Superlattice Avalanche Photodiodes

    Science.gov (United States)

    Huang, Jun

    Type-II superlattice avalanche photodiodes have shown advantages compared to conventional mercury cadmium telluride photodiodes for infrared wavelength detection. However, surface or interface leakage current has been a major issue for superlattice avalanche photodiodes, especially in infrared wavelength region. First, passivation of the superlattice device with ammonium sulfide and thioacetamide was carried out, and its surface quality was studied by X-ray Photoelectron Spectroscopy. The study showed that both ammonium sulfide and thiacetamide passivation can actively remove the native oxide at the surface. Thiacetamide passivation combine more sulfur bonds with III-V elements than that of ammonium sulfide. Another X-ray photoelectron spectra of thiacetamide-treated atomic layer deposited zinc sulfide capped InAs/GaSb superlattice was performed to investigate the interface sulfur bond conditions. Sb--S and As--S bonds disappear while In-S bond gets enhanced, indicating that Indium Sulfide should be the major components at the interface after ZnS deposition. Second, the simulation of electrical characteristics for zinc sulfide, silicon nitride and silicon dioxide passivated superlattice devices was performed by SILVACO software to fit the experimental results and to discover the surface current mechanism. Different surface current mechanism strengths were found. Third, several novel dual-carrier avalanche photodiode structures were designed and simulated. The structures had alternate carrier multiplication regions, placed next to a wider electron multiplication region, creating dual-carrier multiplication feedback systems. Gain and excess noise factor of these structures were simulated and compared based on the dead space multiplication theory under uniform electric field. From the simulation, the applied bias can be greatly lowered or the thickness can be shrunk to achieve the same gain from the conventional device. The width of the thin region was the most

  4. Sensitive pre-amplifier to load for Pin diodes; Pre-amplificador sensible a carga para diodos PIN

    Energy Technology Data Exchange (ETDEWEB)

    Jacobo V, R. Y.; Hernandez D, V. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98060 Zacatecas (Mexico); Ramirez J, F. J., E-mail: yoshimarv@gmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

    2013-10-15

    The electronic instrumentation is indispensable for the measurement and characterization of the radiation. By means of this essential characteristics of the radiation are determined, as activity and their energy components. The nuclear instrumentation is based on the technical characteristics of the radiation detectors and the electronic devices associates (amplifiers, ana logical and digital converters, multichannel analyzers, etc.) The radiation detectors are very important instruments in fields as the nuclear physics, medicine, radiological protection, industry and in other fields, since they are the only method to capture the radiation and to be able to quantify it in precise form. To detect radiation diverse detector types are used, as the semiconductor type, inside them are the photodiodes type Pin. In this work the results that were obtained of the design, simulation, construction and tests of a preamplifier that was designed starting from a photodiode type Pin are presented. The system was designed and simulated with a program for electronic circuits, in this were carried out many tests being obtained a compact design and achieving the best necessary characteristics for its optimization. With the results of the simulation phase the electronics phase was built, which was couples to a spectroscopic amplifier and a multichannel analyzer. The total of the system was evaluated analyzing its performance before a triple source of alphas. Of the tests phase we find that the system allows obtaining, in a multichannel analyzer, the pulses height spectrum, with a good resolution and with this was calibrated the multichannel analyzer.

  5. Pinning Down versus Density

    OpenAIRE

    Juhász, István; Soukup, Lajos; Szentmiklóssy, Zoltán

    2015-01-01

    The pinning down number $ {pd}(X)$ of a topological space $X$ is the smallest cardinal $\\kappa$ such that for any neighborhood assignment $U:X\\to \\tau_X$ there is a set $A\\in [X]^\\kappa$ with $A\\cap U(x)\

  6. Predictable quantum efficient detector based on n-type silicon photodiodes

    Science.gov (United States)

    Dönsberg, Timo; Manoocheri, Farshid; Sildoja, Meelis; Juntunen, Mikko; Savin, Hele; Tuovinen, Esa; Ronkainen, Hannu; Prunnila, Mika; Merimaa, Mikko; Tang, Chi Kwong; Gran, Jarle; Müller, Ingmar; Werner, Lutz; Rougié, Bernard; Pons, Alicia; Smîd, Marek; Gál, Péter; Lolli, Lapo; Brida, Giorgio; Rastello, Maria Luisa; Ikonen, Erkki

    2017-12-01

    The predictable quantum efficient detector (PQED) consists of two custom-made induced junction photodiodes that are mounted in a wedged trap configuration for the reduction of reflectance losses. Until now, all manufactured PQED photodiodes have been based on a structure where a SiO2 layer is thermally grown on top of p-type silicon substrate. In this paper, we present the design, manufacturing, modelling and characterization of a new type of PQED, where the photodiodes have an Al2O3 layer on top of n-type silicon substrate. Atomic layer deposition is used to deposit the layer to the desired thickness. Two sets of photodiodes with varying oxide thicknesses and substrate doping concentrations were fabricated. In order to predict recombination losses of charge carriers, a 3D model of the photodiode was built into Cogenda Genius semiconductor simulation software. It is important to note that a novel experimental method was developed to obtain values for the 3D model parameters. This makes the prediction of the PQED responsivity a completely autonomous process. Detectors were characterized for temperature dependence of dark current, spatial uniformity of responsivity, reflectance, linearity and absolute responsivity at the wavelengths of 488 nm and 532 nm. For both sets of photodiodes, the modelled and measured responsivities were generally in agreement within the measurement and modelling uncertainties of around 100 parts per million (ppm). There is, however, an indication that the modelled internal quantum deficiency may be underestimated by a similar amount. Moreover, the responsivities of the detectors were spatially uniform within 30 ppm peak-to-peak variation. The results obtained in this research indicate that the n-type induced junction photodiode is a very promising alternative to the existing p-type detectors, and thus give additional credibility to the concept of modelled quantum detector serving as a primary standard. Furthermore, the manufacturing of

  7. Lever-Arm Pin Puller

    Science.gov (United States)

    Macmartin, Malcolm

    1994-01-01

    Mechanism holds retaining pins in place except when actuated to release pins quickly. Mechanism is integral part of cover designed to be removed with simple downward motion of hand. Before removal, mechanism secures cover in place. After removal, mechanism holds retaining pins for reuse.

  8. About possibility of application of avalanche photodiodes during radioecological monitoring

    International Nuclear Information System (INIS)

    Huseynaliyev, Y.H.

    2004-01-01

    Full text : This article includes all necessary information about possibility of application of avalanche photodiodes during radioecological surveys. It is shown that at present these devices can be operated in every field of our life. Mostly their operation is based on different types of crystals, which have different characteristics. These photodiodes have a great importance in production of tomographs for conducting of diagnostics and forecasting. Further additional diagram of connection to work of this photodiode is explained [az

  9. Optimization of Packaging for PIN Photodiode Modules for 100Gbit/s Ethernet Applications

    DEFF Research Database (Denmark)

    Jiang, Chenhui; Johansen, Tom Keinicke; Krozer, Viktor

    2007-01-01

    In this paper the packaging of optical components is investigated employing a conductor backed coplanar waveguide (CBCPW). The study is performed using 3D electromagnetic (EM) simulations in a broadband range up to 110GHz. Higher-order resonances are observed in both measurement and simulation...... results. Based on the verified EM simulation setup, the origin of resonances is identified and remedies are suggested in the paper. Several optimization schemes for achieving good transmission characteristics for the planar structure as well as for the coax-CPW transition are proposed such as properly...

  10. Liquid-helium scintillation detection with germanium photodiodes

    International Nuclear Information System (INIS)

    Luke, P.N.; Haller, E.E.; Steiner, H.M.

    1982-05-01

    Special high-purity germanium photodiodes have been developed for the direct detection of vacuum ultraviolet scintillations in liquid helium. The photodiodes are immersed in the liquid helium, and scintillations are detected through one of the bare sides of the photodiodes. Test results with scintillation photons produced by 5.3-MeV α particles are presented. The use of these photodiodes as liquid-helium scintillation detectors may offer substantial improvements over the alternate detection method requiring the use of wavelength shifters and photomultiplier tubes

  11. Nano-multiplication region avalanche photodiodes and arrays

    Science.gov (United States)

    Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor); Cunningham, Thomas J. (Inventor)

    2011-01-01

    An avalanche photodiode with a nano-scale reach-through structure comprising n-doped and p-doped regions, formed on a silicon island on an insulator, so that the avalanche photodiode may be electrically isolated from other circuitry on other silicon islands on the same silicon chip as the avalanche photodiode. For some embodiments, multiplied holes generated by an avalanche reduces the electric field in the depletion region of the n-doped and p-doped regions to bring about self-quenching of the avalanche photodiode. Other embodiments are described and claimed.

  12. Nuclear fuel pin

    International Nuclear Information System (INIS)

    Hartley, Kenneth; Moulding, T.L.J.; Rostron, Norman.

    1979-01-01

    Fuel pin for use in fast breeder nuclear reactors containing fissile and fertile areas of which the fissile and fertile materials do not mix. The fissile material takes the shape of large and small diameter microspheres (the small diameter microspheres can pass through the interstices between the large microspheres). The barrier layers being composed of microspheres with a diameter situated between those of the large and small microspheres ensure that the materials do not mix [fr

  13. Pinning in nonmagnetic borocarbides

    International Nuclear Information System (INIS)

    Zholobenko, A.N.; Mikitik, G.P.; Fil, V.D.; Kim, J.D.; Lee, S.I.

    2005-01-01

    The field dependences of the Labush parameter in nonmagnetic borocarbides are measured by the method which does not require the free flux flow regime. The anticipated critical current densities are estimated. These values are by two orders of magnitude higher than those measured 'directly' in transport (magnetic) experiments. The giant peak-effect in the field dependences of the Labush parameter is revealed in the Y-based borocarbides. Its behavior is well approximated by the collective pinning theory

  14. Interplanetary Space Weather Effects on Lunar Reconnaissance Orbiter Avalanche Photodiode Performance

    Science.gov (United States)

    Clements, E. B.; Carlton, A. K.; Joyce, C. J.; Schwadron, N. A.; Spence, H. E.; Sun, X.; Cahoy, K.

    2016-01-01

    Space weather is a major concern for radiation-sensitive space systems, particularly for interplanetary missions, which operate outside of the protection of Earth's magnetic field. We examine and quantify the effects of space weather on silicon avalanche photodiodes (SiAPDs), which are used for interplanetary laser altimeters and communications systems and can be sensitive to even low levels of radiation (less than 50 cGy). While ground-based radiation testing has been performed on avalanche photodiode (APDs) for space missions, in-space measurements of SiAPD response to interplanetary space weather have not been previously reported. We compare noise data from the Lunar Reconnaissance Orbiter (LRO) Lunar Orbiter Laser Altimeter (LOLA) SiAPDs with radiation measurements from the onboard Cosmic Ray Telescope for the Effects of Radiation (CRaTER) instrument. We did not find any evidence to support radiation as the cause of changes in detector threshold voltage during radiation storms, both for transient detector noise and long-term average detector noise, suggesting that the approximately 1.3 cm thick shielding (a combination of titanium and beryllium) of the LOLA detectors is sufficient for SiAPDs on interplanetary missions with radiation environments similar to what the LRO experienced (559 cGy of radiation over 4 years).

  15. Investigation of pinning in MgB2 superconductors

    International Nuclear Information System (INIS)

    Mohammad, S.; Reissner, M.; Steiner, W.; Bauer, E.; Giovannini, M.

    2006-01-01

    Full text: The pinning behaviour of bulk MgB 2 superconductors is peculiar in many respects. Pinning seems to be stronger than in classical high T C materials and there seems to be no weak link problem in these compounds, giving hope to produce bulk samples and wires with current densities appropriate for technical applications. But, although many studies concerning the pinning behaviour in this compound appeared in recent years, the results are still contradictory. In the present work we present results of an investigation of the pinning behaviour by magnetic relaxation measurements of three MgB 2 samples: a pure one, a sample with 8 at% Al substitution and a sample with 10 wt% of SiC admixture. A comparison of different analyses methods is given. (author)

  16. Detection of charged particles through a photodiode: design and analysis; Deteccion de particulas cargadas mediante un fotodiodo: diseno y analisis

    Energy Technology Data Exchange (ETDEWEB)

    Angoli, A.; Quirino, L.L.; Hernandez, V.M.; Lopez del R, H.; Mireles, F.; Davila, J.I.; Rios, C.; Pinedo, J.L. [UAEN, UAZ, 98000 Zacatecas (Mexico)]. e-mail: toono4@hotmail.com

    2006-07-01

    This project develops and construct an charge particle detector mean a pin photodiode array, design and analysis using a silicon pin Fotodiodo that generally is used to detect visible light, its good efficiency, size compact and reduced cost specifically allows to its use in the radiation monitoring and alpha particle detection. Here, so much, appears the design of the system of detection like its characterization for alpha particles where one is reported as alpha energy resolution and detection efficiency. The equipment used in the development of work consists of alpha particle a triple source composed of Am-241, Pu-239 and Cm-244 with 5,55 KBq as total activity, Maestro 32 software made by ORTEC, a multi-channel card Triumph from ORTEC and one low activity electroplated uranium sample. (Author)

  17. Radiation detectors of PIN type for X-rays

    International Nuclear Information System (INIS)

    Ramirez-Jimenez, F.J.

    2003-01-01

    In this laboratory session, tree experiments are proposed: the measurement of X-ray energy spectra from radioactive sources with a high resolution cooled Si-Li detector, with a room temperature PIN diode and the measurement of the response of a PIN diode to the intensity of X-rays of radio-diagnostic units. The spectra obtained with the Si-Li detector help to understand the energy distribution of X-rays and are used as a reference to compare the results obtained with the PIN diode. Measurements in medical X-ray machines are proposed. Low cost, simple electronic instruments and systems are used as tools to make measurements in X-ray units used in radio-diagnostic

  18. Study of X-ray emission from plasma focus device using vacuum photodiode

    Science.gov (United States)

    Talukdar, N.; Borthakur, T. K.; Neog, N. K.

    2013-10-01

    A newly fabricated vacuum photodiode (VPD) is used to measure time resolved X-ray emission and electron temperature from plasma focus device operated in hydrogen medium. The VPD signals are compared with the PIN diode signal and observed to be of similar in nature. The acquired signals from VPD are deduced to measure electron temperature and X-ray radiated power for four different anode tips (cylindrical, diverging, oval and converging). The electron temperatures are found to be 0.64, 1.5, 0.60 and 0.55 keV for cylindrical, diverging, oval and converging anode tips respectively in hydrogen plasma. The X-ray radiated powers are observed to be varying with respect to the shape of the anode tips and it is found highest in case of converging tip and lowest for the diverging one. Results indicate that VPD could efficiently be employed as an X-ray diagnostics in plasma focus device.

  19. Study of X-ray emission from plasma focus device using vacuum photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Talukdar, N.; Borthakur, T.K., E-mail: tkborthakur@yahoo.co.uk; Neog, N.K.

    2013-10-21

    A newly fabricated vacuum photodiode (VPD) is used to measure time resolved X-ray emission and electron temperature from plasma focus device operated in hydrogen medium. The VPD signals are compared with the PIN diode signal and observed to be of similar in nature. The acquired signals from VPD are deduced to measure electron temperature and X-ray radiated power for four different anode tips (cylindrical, diverging, oval and converging). The electron temperatures are found to be 0.64, 1.5, 0.60 and 0.55 keV for cylindrical, diverging, oval and converging anode tips respectively in hydrogen plasma. The X-ray radiated powers are observed to be varying with respect to the shape of the anode tips and it is found highest in case of converging tip and lowest for the diverging one. Results indicate that VPD could efficiently be employed as an X-ray diagnostics in plasma focus device.

  20. The PIN-FORMED (PIN) protein family of auxin transporters.

    Science.gov (United States)

    Krecek, Pavel; Skupa, Petr; Libus, Jirí; Naramoto, Satoshi; Tejos, Ricardo; Friml, Jirí; Zazímalová, Eva

    2009-01-01

    The PIN-FORMED (PIN) proteins are secondary transporters acting in the efflux of the plant signal molecule auxin from cells. They are asymmetrically localized within cells and their polarity determines the directionality of intercellular auxin flow. PIN genes are found exclusively in the genomes of multicellular plants and play an important role in regulating asymmetric auxin distribution in multiple developmental processes, including embryogenesis, organogenesis, tissue differentiation and tropic responses. All PIN proteins have a similar structure with amino- and carboxy-terminal hydrophobic, membrane-spanning domains separated by a central hydrophilic domain. The structure of the hydrophobic domains is well conserved. The hydrophilic domain is more divergent and it determines eight groups within the protein family. The activity of PIN proteins is regulated at multiple levels, including transcription, protein stability, subcellular localization and transport activity. Different endogenous and environmental signals can modulate PIN activity and thus modulate auxin-distribution-dependent development. A large group of PIN proteins, including the most ancient members known from mosses, localize to the endoplasmic reticulum and they regulate the subcellular compartmentalization of auxin and thus auxin metabolism. Further work is needed to establish the physiological importance of this unexpected mode of auxin homeostasis regulation. Furthermore, the evolution of PIN-based transport, PIN protein structure and more detailed biochemical characterization of the transport function are important topics for further studies.

  1. Feasibility studies of using thin entrance window photodiodes for clinical electron beam dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Nascimento, Cristina R.; Asfora, Viviane K.; Barros, Vinicius S.M.; Gonçalves, Josemary A.C.; Andrade, Lucas F.R.; Khoury, Helen J.; Bueno, Carmen C., E-mail: vsmdbarros@gmail.com, E-mail: vikhoury@gmail.com, E-mail: hjkhoury@gmail.com, E-mail: cristinaramos@smartsat.com.br, E-mail: josemary@ipen.br, E-mail: ccbueno@ipen.br [Universidade Federal de Pernambuco (UFPE), Recife, PE (Brazil); Instituto Federal de Educação, Ciência e Tecnologia de Pernambuco (IFPE), Recife-PE (Brazil). Departamento de Energia Nuclear; Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Santa Casa de Misericórdia de Itabuna, BA (Brazil)

    2017-11-01

    The response of the commercial XRA-24 PIN photodiode (5.76 mm{sup 2} active area) for clinical electron beam dosimetry covering the range of 8-12 MeV was investigated. Within this energy range, the charge generated in the diode's sensitive volume is linearly dependent on the absorbed dose up to 320 cGy. However, charge sensitivity coefficients evidenced that the dose response of the diode is slightly dependent on the electron beam energy. Indeed, the diode's energy dependence was within 8.5% for 8-12MeV electron beams. On the other hand, it was also observed an excellent repeatability of these results with a variation coefficient (VC) lower than 0.4%, which is within the 1% tolerance limit recommended by the AAPM TG-62. Furthermore, the agreement between the percentage depth dose profiles (PDD) gathered with the diode and the ionization chamber allowed achieving the electron beam quality within 1% of that obtained with the ionization chamber. Based on these results, the photodiode XRA-24 can be a reliable and inexpensive alternative for electron beams dosimetry. (author)

  2. Production of a square geometry Americium standard source for use with photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Costa, Priscila; Geraldo, Bianca; Raele, Marcus P.; Marumo, Júlio T.; Vicente, Roberto; Zahn, Guilherme S.; Genezini, Frederico A., E-mail: priscila3.costa@usp.br, E-mail: fredzini@ipen.br [Instituto de Pesquisas Energéticas e Nucleares (IPEN/CNEN-SP), São Paulo, SP (Brazil)

    2017-07-01

    In the development of a thermal neutron detector using a square photodiode and a thin boron film, a radioactive calibration source with the same geometry was needed. An americium-243 standard source was produced by electrodeposition aiming at the calibration of a PIN-type silicon photodiode with a detection area of 10 x 10 mm{sup 2}. To produce the samples two tests were performed. In the first test, a square stainless steel plate (10 x 10 mm{sup 2}) was fixed on the surface of the conventional plate, which was removed after deposition. To reduce the loss of activity of the source, in the second test nail polish was applied on the silver plate leaving only an area of 10 x 10 mm{sup 2} without varnish coating. Once the electrodeposition process was completed, the activity concentration measurement was performed by alpha particle spectrometry. The first method presented a lower activity when compared to the total activity of Am-243 added initially. For the second method, the total activity was concentrate in the exposed square region (without nail polish). The results showed that it is possible to obtain a square geometry source; furthermore, the surrounding nail polish was not contaminated by {sup 243}Am. The comparison of these two approaches indicated that the second method was more efficient as it was possible to concentrate all the americium activity in the delimited square area. (author)

  3. Feasibility studies of using thin entrance window photodiodes for clinical electron beam dosimetry

    International Nuclear Information System (INIS)

    Nascimento, Cristina R.; Asfora, Viviane K.; Barros, Vinicius S.M.; Gonçalves, Josemary A.C.; Andrade, Lucas F.R.; Khoury, Helen J.; Bueno, Carmen C.

    2017-01-01

    The response of the commercial XRA-24 PIN photodiode (5.76 mm 2 active area) for clinical electron beam dosimetry covering the range of 8-12 MeV was investigated. Within this energy range, the charge generated in the diode's sensitive volume is linearly dependent on the absorbed dose up to 320 cGy. However, charge sensitivity coefficients evidenced that the dose response of the diode is slightly dependent on the electron beam energy. Indeed, the diode's energy dependence was within 8.5% for 8-12MeV electron beams. On the other hand, it was also observed an excellent repeatability of these results with a variation coefficient (VC) lower than 0.4%, which is within the 1% tolerance limit recommended by the AAPM TG-62. Furthermore, the agreement between the percentage depth dose profiles (PDD) gathered with the diode and the ionization chamber allowed achieving the electron beam quality within 1% of that obtained with the ionization chamber. Based on these results, the photodiode XRA-24 can be a reliable and inexpensive alternative for electron beams dosimetry. (author)

  4. Non-linear behaviour of large-area avalanche photodiodes

    CERN Document Server

    Fernandes, L M P; Monteiro, C M B; Santos, J M; Morgado, R E

    2002-01-01

    The characterisation of photodiodes used as photosensors requires a determination of the number of electron-hole pairs produced by scintillation light. One method involves comparing signals produced by X-ray absorptions occurring directly in the avalanche photodiode with the light signals. When the light is derived from light-emitting diodes in the 400-600 nm range, significant non-linear behaviour is reported. In the present work, we extend the study of the linear behaviour to large-area avalanche photodiodes, of Advanced Photonix, used as photosensors of the vacuum ultraviolet (VUV) scintillation light produced by argon (128 nm) and xenon (173 nm). We observed greater non-linearities in the avalanche photodiodes for the VUV scintillation light than reported previously for visible light, but considerably less than the non-linearities observed in other commercially available avalanche photodiodes.

  5. ASIC Readout Circuit Architecture for Large Geiger Photodiode Arrays

    Science.gov (United States)

    Vasile, Stefan; Lipson, Jerold

    2012-01-01

    The objective of this work was to develop a new class of readout integrated circuit (ROIC) arrays to be operated with Geiger avalanche photodiode (GPD) arrays, by integrating multiple functions at the pixel level (smart-pixel or active pixel technology) in 250-nm CMOS (complementary metal oxide semiconductor) processes. In order to pack a maximum of functions within a minimum pixel size, the ROIC array is a full, custom application-specific integrated circuit (ASIC) design using a mixed-signal CMOS process with compact primitive layout cells. The ROIC array was processed to allow assembly in bump-bonding technology with photon-counting infrared detector arrays into 3-D imaging cameras (LADAR). The ROIC architecture was designed to work with either common- anode Si GPD arrays or common-cathode InGaAs GPD arrays. The current ROIC pixel design is hardwired prior to processing one of the two GPD array configurations, and it has the provision to allow soft reconfiguration to either array (to be implemented into the next ROIC array generation). The ROIC pixel architecture implements the Geiger avalanche quenching, bias, reset, and time to digital conversion (TDC) functions in full-digital design, and uses time domain over-sampling (vernier) to allow high temporal resolution at low clock rates, increased data yield, and improved utilization of the laser beam.

  6. Application of avalanche photodiode for soft X-ray pulse-height analyses in the Ht-7 tokamak

    CERN Document Server

    Shi Yue Jiang; Hu Li Qun; Sun Yan Jun; LiuSheng; Ling Bil

    2002-01-01

    An avalanche photodiode (APD) has been used as soft X-ray energy pulse-height analysis system for the measurement of the electron temperature on the HT-7 tokamak. The experimental results obtained with the APD with its inferior energy resolution show a little difference compared to the conventional high energy-resolution Si (Li) detector. Both numerical analysis and experimental results prove that the APD is good enough for application of the electron temperature measurement in tokamaks.

  7. Pinning, de-pinning and re-pinning of a slowly varying rivulet

    KAUST Repository

    Paterson, C.

    2013-09-01

    The solutions for the unidirectional flow of a thin rivulet with prescribed volume flux down an inclined planar substrate are used to describe the locally unidirectional flow of a rivulet with constant width (i.e. pinned contact lines) but slowly varying contact angle as well as the possible pinning and subsequent de-pinning of a rivulet with constant contact angle and the possible de-pinning and subsequent re-pinning of a rivulet with constant width as they flow in the azimuthal direction from the top to the bottom of a large horizontal cylinder. Despite being the same locally, the global behaviour of a rivulet with constant width can be very different from that of a rivulet with constant contact angle. In particular, while a rivulet with constant non-zero contact angle can always run from the top to the bottom of the cylinder, the behaviour of a rivulet with constant width depends on the value of the width. Specifically, while a narrow rivulet can run all the way from the top to the bottom of the cylinder, a wide rivulet can run from the top of the cylinder only to a critical azimuthal angle. The scenario in which the hitherto pinned contact lines of the rivulet de-pin at the critical azimuthal angle and the rivulet runs from the critical azimuthal angle to the bottom of the cylinder with zero contact angle but slowly varying width is discussed. The pinning and de-pinning of a rivulet with constant contact angle, and the corresponding situation involving the de-pinning and re-pinning of a rivulet with constant width at a non-zero contact angle which generalises the de-pinning at zero contact angle discussed earlier, are described. In the latter situation, the mass of fluid on the cylinder is found to be a monotonically increasing function of the constant width. © 2013 Elsevier Masson SAS. All rights reserved.

  8. GEM scintillation readout with avalanche photodiodes

    CERN Document Server

    Conceição, A S; Fernandes, L M P; Monteiro, C M B; Coelho, L C C; Azevedo, C D R; Veloso, J F C A; Lopesac, J A M; dos Santosa, J M F

    2007-01-01

    The use of the scintillation produced in the charge avalanches in GEM holes as signal amplification and readout is investigated for xenon. A VUV-sensitive avalanche photodiode has been used as photosensor. Detector gains of about 4 × 104 are achieved in scintillation readout mode, for GEM voltages of 490 V and for a photosensor gain of 150. Those gains are more than one order of magnitude larger than what is obtained using charge readout. In addition, the energy resolutions achieved with the scintillation readout are lower than those achieved with charge readout. The GEM scintillation yield in xenon was measured as a function of GEM voltage, presenting values that are about a half of those achieved for the charge yield, and reach about 730 photons per primary electron at GEM voltages of 490 V.

  9. Diamond photodiodes for x-ray application

    Energy Technology Data Exchange (ETDEWEB)

    Distel, James R [Los Alamos National Laboratory; Smedley, John [BNL; Keister, Jeffrey W [BNL; Muller, Erik [STONY BROOK UNIV.; Jordan - Sweet, Jean [WATSON RESEARCH CENTER; Bohon, Jen [CASE WESTERN RESERVE UNIV.; Dong, Bin [NON LANL

    2009-01-01

    Single crystal high purity CVD diamonds have been metallized and calibrated as photodiodes at the National Synchrotron Light Source (NSLS). Current mode responsivity measurements have been made over a wide range (0.2-28 keV) of photon energies across several beamlines. Linear response has been achieved over ten orders of magnitude of incident flux, along with uniform spatial response. A simple model of responsivity has been used to describe the results, yielding a value of 13.3 {+-} 0.5 eV for the mean pair creation energy. The responsivity vs. photon energy data show a dip for photon energies near the carbon edge (284 eV), indicating incomplete charge collection for carriers created less than one micron from the metallized layer.

  10. Diamond photodiodes for x-ray application

    International Nuclear Information System (INIS)

    Distel, James R.; Smedley, John; Keister, Jeffrey W.; Muller, Erik; Jordan-Sweet, Jean; Bohon, Jen; Dong, Bin

    2009-01-01

    Single crystal high purity CVD diamonds have been metallized and calibrated as photodiodes at the National Synchrotron Light Source (NSLS). Current mode responsivity measurements have been made over a wide range (0.2-28 keV) of photon energies across several beamlines. Linear response has been achieved over ten orders of magnitude of incident flux, along with uniform spatial response. A simple model of responsivity has been used to describe the results, yielding a value of 13.3 ± 0.5 eV for the mean pair creation energy. The responsivity vs. photon energy data show a dip for photon energies near the carbon edge (284 eV), indicating incomplete charge collection for carriers created less than one micron from the metallized layer.

  11. Vortex pinning and creep experiments

    International Nuclear Information System (INIS)

    Kes, P.H.

    1991-01-01

    A brief review of basic flux-pinning and flux-creep ingredients and a selection of experimental results on high-temperature-superconductivity compounds is presented. Emphasis is put on recent results and on those properties which are central to the emerging understanding of the flux-pinning and flux-creep mechanisms of these fascinating materials

  12. Nondestrucive analysis of fuel pins

    Science.gov (United States)

    Stepan, I.E.; Allard, N.P.; Suter, C.R.

    1972-11-03

    Disclosure is made of a method and a correspondingly adapted facility for the nondestructive analysis of the concentation of fuel and poison in a nuclear reactor fuel pin. The concentrations of fuel and poison in successive sections along the entire length of the fuel pin are determined by measuring the reactivity of a thermal reactor as each successive small section of the fuel pin is exposed to the neutron flux of the reactor core and comparing the measured reactivity with the reactivities measured for standard fuel pins having various known concentrations. Only a small section of the length of the fuel pin is exposed to the neutron flux at any one time while the remainder of the fuel pin is shielded from the neutron flux. In order to expose only a small section at any one time, a boron-10-lined dry traverse tube is passed through the test region within the core of a low-power thermal nuclear reactor which has a very high fuel sensitivity. A narrow window in the boron-10 lining is positioned at the core center line. The fuel pins are then systematically traversed through the tube past the narrow window such that successive small sections along the length of the fuel pin are exposed to the neutron flux which passes through the narrow window.

  13. Piezo-Phototronic Effect on Selective Electron or Hole Transport through Depletion Region of Vis-NIR Broadband Photodiode.

    Science.gov (United States)

    Zou, Haiyang; Li, Xiaogan; Peng, Wenbo; Wu, Wenzhuo; Yu, Ruomeng; Wu, Changsheng; Ding, Wenbo; Hu, Fei; Liu, Ruiyuan; Zi, Yunlong; Wang, Zhong Lin

    2017-08-01

    Silicon underpins nearly all microelectronics today and will continue to do so for some decades to come. However, for silicon photonics, the indirect band gap of silicon and lack of adjustability severely limit its use in applications such as broadband photodiodes. Here, a high-performance p-Si/n-ZnO broadband photodiode working in a wide wavelength range from visible to near-infrared light with high sensitivity, fast response, and good stability is reported. The absorption of near-infrared wavelength light is significantly enhanced due to the nanostructured/textured top surface. The general performance of the broadband photodiodes can be further improved by the piezo-phototronic effect. The enhancement of responsivity can reach a maximum of 78% to 442 nm illumination, the linearity and saturation limit to 1060 nm light are also significantly increased by applying external strains. The photodiode is illuminated with different wavelength lights to selectively choose the photogenerated charge carriers (either electrons or holes) passing through the depletion region, to investigate the piezo-phototronic effect on electron or hole transport separately for the first time. This is essential for studying the basic principles in order to develop a full understanding about piezotronics and it also enables the development of the better performance of optoelectronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Repeat biopsy in patients with initial diagnosis of PIN; La biopsia ripetuta nei pazienti con diagnosi iniziale di PIN

    Energy Technology Data Exchange (ETDEWEB)

    De Matteis, Massimo [Azienda Ospedaliera Policlinico S. Orsola-Malpighi, Bologna (Italy). UO Radiologia Albertoni; Poggi, Cristina; De Martino, Antonietta; Pavlica, Pietro [Azienda Ospedaliera Policlinico S. Orsola-Malpighi, Bologna (Italy). UO Radiologia Palagi, Dipartimento area radiologica; Corti, Barbara [Azienda Ospedaliera Policlinico S. Orsola-Malpighi, Bologna (Italy). UO Anatomia ed istologia patologica, Dipartimento oncologico ed ematologico; Barozzi, Libero [Azienda Ospedaliera Policlinico S. Orsola-Malpighi, Bologna (Italy). UO Radiologia d' urgenza, Dipartimento emergenze ed accettazione

    2005-09-15

    Purpose. Prostatic intra-epithelial neoplasia (PIN) is considered a pre-malignant lesion and the main precursor of invasive prostatic adenocarcinoma. A PIN diagnosis established by prostate needle biopsy poses a difficult clinical management. problem. We retrospectively reviewed our three-year experience in order to identify criteria for referring patients to repeat biopsy. Materials and methods. We reviewed the repeat biopsy records of 72 patients in whom PIN had been detected on initial US-guided needle biopsy of the prostate. All the patients had a minimum of 6 biopsy cores taken, and they all had PSA > 4 ng/ml. Results. Adenocarcinoma was detected in 15 patients out of 50 (30%) with an initial diagnosis of low-grade PIN and in 10 patients out of 22 (45.4%) with high grade PIN, in 7 out of 18 (39%) in whom PSA levels had decreased during the observation interval, in 16 patients out of 46 (35%) in whom the PSA had increased and in 2 patients out of 8 (25%) with stable PSA. Conclusions. Our results seem to confirm that PIN can be considered a precursor of prostatic adenocarcinoma or a histological alteration often associated with it. Patients with low-grade PIN and particularly those with high-grade PIN should be regularly subjected to repeat biopsy at short intervals due to the high frequency of the final diagnosis of carcinoma. No agreement has been reached on the time interval between the first and the second biopsy. The PSA changes during the observation period are not a statistically significant parameter to suggest the repetition of prostatic biopsy. [Italian] Scopo. La neoplasia prostatica intraepiteliale (PIN) e considerata una lesione premaligna ed il precursore principale dell'adenocarcinoma prostatico infiltrante. La diagnosi di PIN ottenuta con l'agobiopsia della prostata rappresenta un difficile problema gestionale clinico. In una valutazione retrospettiva della nostra esperienza di 3 anni si e cercato di individuare i criteri che possano

  15. Synchronizability on complex networks via pinning control

    Indian Academy of Sciences (India)

    article/fulltext/pram/080/04/0593-0606 ... Numerical simulations show that different pinning strategies have different pinning synchronizability on the same complex network, and the synchronizability with pinning control is consistent with one ...

  16. Photodiode read-out of the ALICE photon spectrometer $PbWO_{4}$ crystals

    CERN Document Server

    Man'ko, V I; Sibiryak, Yu; Volkov, M; Klovning, A; Maeland, O A; Odland, O H; Rongved, R; Skaali, B

    1999-01-01

    Proposal of abstract for LEB99, Snowmass, Colorado, 20-24 September 1999The PHOton Spectrometer of the ALICE experiment is an electromagnetic calorimeter of high granularity consisting of 17280 lead-tungstate (PWO) crystals of dimensions 22x22x180 mm3, read out by large-area PIN-diodes with very low-noise front-end electronics. The crystal assembly is operated at -25C to increase the PWO light yield. A 16.1x17.1 mm2 photodiode, optimized for the PWO emissio spectrum at 400-500 nm, has been developed. The 20x20 mm2 preamplifier PCB is attached to the back side of the diode ceramic frame. The charge sensitive preamplifier is built in discrete logic with two input JFETs for optimum matching with the ~150pF PIN-diode. A prototype shaper has been designed and built in discrete logic. For a detector matrix of 64 units the measured ENCs are between 450-550e at -25C. Beam tests demonstrate that the required energy resolution is reached.Summary:The PHOton Spectrometer of the ALICE experiment is an electromagnetic calo...

  17. Composite metal oxide semiconductor based photodiodes for solar panel tracking applications

    Energy Technology Data Exchange (ETDEWEB)

    Al-Ghamdi, Ahmed A., E-mail: aghamdi90@hotmail.com [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Dere, A. [Department of Physics, Faculty of Science, Firat University, Elazig (Turkey); Tataroğlu, A. [Department of Physics, Faculty of Science, Gazi University, Ankara (Turkey); Arif, Bilal [Department of Physics, Faculty of Science, Firat University, Elazig (Turkey); Yakuphanoglu, F. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Department of Physics, Faculty of Science, Firat University, Elazig (Turkey); El-Tantawy, Farid [Department of Physics, Faculty of Science, Suez Canal University, Ismailia (Egypt); Farooq, W.A. [Physics and Astronomy Department, College of Science, King Saud University, Riyadh (Saudi Arabia)

    2015-11-25

    The Zn{sub 1−x}Al{sub x}O:Cu{sub 2}O composite films were synthesized by the sol gel method to fabricate photodiodes. The transparent metal oxide Zn{sub 1−x}Al{sub x}O:Cu{sub 2}O thin films were grown on p-Si substrates by spin coating technique. Electrical characterization of the p-Si/AZO:Cu{sub 2}O photodiodes was performed by current–voltage and capacitance–conductance–voltage characteristics under dark and various illumination conditions. The transient photocurrent of the diodes increases with increase in illumination intensity. The photoconducting mechanism of the diodes is controlled by the continuous distribution of trap levels. The photocapacitance and photoconductivity of the diodes are decreased with increasing Cu{sub 2}O content. The series resistance–voltage behavior confirms the presence of the interface states in the interface of the diodes. The photoresponse properties of the diodes indicate that the p-Si/Zn{sub 1−x}Al{sub x}O–Cu{sub 2}O diodes can be used as a photosensor in solar panel tracking applications. - Highlights: • Zn{sub 1−x}Al{sub x}O:Cu{sub 2}O composite films were synthesized by the sol gel method. • p-Si/Zn{sub 1−x}Al{sub x}O–Cu{sub 2}O diodes were fabricated. • p-Si/Zn{sub 1−x}Al{sub x}O–Cu{sub 2}O diodes can be used in the optoelectronic applications.

  18. Noiseless Near-Infrared Photon Counting Avalanche Photodiode Detectors

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposal concerns the research and development of a mercury cadmium telluride (HgCdTe) Avalanche Photodiode (APD) array for use as a low-noise science detector...

  19. High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n) structures

    Energy Technology Data Exchange (ETDEWEB)

    Xu, G.; Salvador, A.; Botchkarev, A.E.; Kim, W.; Lu, C.; Tang, H. [Illinois Univ., Urbana, IL (United States). Mater. Res. Lab. and Coordinated Sci.; Morkoc, H. [Illinois Univ., Urbana, IL (United States). Mater. Res. Lab. and Coordinated Sci.]|[Air Force Wright Lab., Wright Patterson, AFB, OH (United States)]|[Dept. of Electrical Eng., Virginia Commonwealth Univ., Richmond, VA (United States); Smith, G.; Estes, M.; Dang, T. [Air Force Wright Lab., Wright Patterson, AFB, OH (United States); Wolf, P. [Air Force Inst. of Tech., Wright-Patterson AFB, OH (United States). Dept. of Engineering Physics

    1998-08-01

    We have investigated the spectral response of front surface illuminated GaN, AlGaN/GaN and AlGaN p-i-n ultraviolet photodetectors grown by reactive molecular beam epitaxy on sapphire substrates. The GaN homojunction p-i-n photodiode exhibited a peaked response at 364 nm the origin of which is not yet clear. This response was absent in the AlGaN/GaN heterojunction p-i-n detectors. The maximum responsivity for the unbiased GaN and AlGaN/GaN is 0.07 and 0.12 A/W, respetively, and occurs at 364 nm. The responsivity drops by more than 3 orders of magnitude near 390 nm. The AlGaN homojunction p-i-n on the other hand has a peak responsivity of 0.08 A/W at 340 nm. The noise equivalent power of 4 pW and 8.3 pW were obtained for the GaN and AlGaN/GaN photodiodes respectively. We measured extremely fast decay times of 12 ns for the AlGaN/GaN and 29 ns for the GaN photodiodes. (orig.) 5 refs.

  20. Automated fuel pin loading system

    Science.gov (United States)

    Christiansen, D.W.; Brown, W.F.; Steffen, J.M.

    An automated loading system for nuclear reactor fuel elements utilizes a gravity feed conveyor which permits individual fuel pins to roll along a constrained path perpendicular to their respective lengths. The individual lengths of fuel cladding are directed onto movable transports, where they are aligned coaxially with the axes of associated handling equipment at appropriate production stations. Each fuel pin can be be reciprocated axially and/or rotated about its axis as required during handling steps. The fuel pins are inerted as a batch prior to welding of end caps by one of two disclosed welding systems.

  1. Low-energy X-ray and gamma spectrometry using silicon photodiodes; Espectrometria de raios X e gama de baixa energia utilizando fotodiodos de silicio

    Energy Technology Data Exchange (ETDEWEB)

    Silva, Iran Jose Oliveira da

    2000-08-01

    The use of semiconductor detectors for radiation detection has increased in recent years due to advantages they present in comparison to other types of detectors. As the working principle of commercially available photodiodes is similar to the semiconductor detector, this study was carried out to evaluate the use of Si photodiodes for low energy x-ray and gamma spectrometry. The photodiodes investigated were SFH-205, SFH-206, BPW-34 and XRA-50 which have the following characteristics: active area of 0,07 cm{sup 2} and 0,25 cm{sup 2}, thickness of the depletion ranging from 100 to 200 {mu}m and junction capacitance of 72 pF. The photodiode was polarized with a reverse bias and connected to a charge sensitive pre-amplifier, followed by a amplifier and multichannel pulse analyzer. Standard radiation source used in this experiment were {sup 241} Am, {sup 109} Cd, {sup 57} Co and {sup 133} Ba. The X-ray fluorescence of lead and silver were also measured through K- and L-lines. All the measurements were made with the photodiodes at room temperature.The results show that the responses of the photodiodes very linear by the x-ray energy and that the energy resolution in FWHM varied between 1.9 keV and 4.4 keV for peaks corresponding to 11.9 keV to 59 keV. The BPW-34 showed the best energy resolution and the lower dark current. The full-energy peak efficiency was also determined and it was observed that the peak efficiency decreases rapidly above 50 keV. The resolution and efficiency are similar to the values obtained with other semiconductor detectors, evidencing that the photodiodes used in that study can be used as a good performance detector for low energy X-ray and gamma spectrometry. (author)

  2. Pinning Mechanisms in YBCO Tapes

    CERN Document Server

    Spera, Marcello; Ballarino, Amalia

    2015-01-01

    In this thesis work, a study on flux pinning mechanisms of commercial YBCO tapes is presented. This study has been performed via critical current characterization using transport (via direct I-V curves) and magnetization (via a Vibrating Sample Magnetometer) measurements. The latter ones turned out to be better concerning the comprehension of the pinning landscape of the provided samples, as a wider range of magnetic fields and temperatures is available for those measurements in the setup I used. The comparison of the experimental data with existing theoretical models allowed me to draw a picture of the pinning mechanisms underlying in each sample, and they turned out to be quite different one another. Moreover, for high-performance research tapes, another interesting feature has been found: the counterplay between the self-field critical current and the in-field one. Very well engineered artificial pinning structures limit the self-field critical current density due to the hi...

  3. Silicide Schottky Contacts to Silicon: Screened Pinning at Defect Levels

    Energy Technology Data Exchange (ETDEWEB)

    Drummond, T.J.

    1999-03-11

    Silicide Schottky contacts can be as large as 0.955 eV (E{sub v} + 0.165 eV) on n-type silicon and as large as 1.05 eV (E{sub c} {minus} 0.07 eV) on p-type silicon. Current models of Schottky barrier formation do not provide a satisfactory explanation of occurrence of this wide variation. A model for understanding Schottky contacts via screened pinning at defect levels is presented. In the present paper it is shown that most transition metal silicides are pinned approximately 0.48 eV above the valence band by interstitial Si clusters. Rare earth disilicides pin close to the divacancy acceptor level 0.41 eV below the conduction band edge while high work function silicides of Ir and Pt pin close to the divacancy donor level 0.21 eV above the valence band edge. Selection of a particular defect pinning level depends strongly on the relative positions of the silicide work function and the defect energy level on an absolute energy scale.

  4. Design and fabrication of organic semiconductor photodiodes

    Science.gov (United States)

    Hammond, William Thomas

    Organic materials are synthetically numerous, mechanically flexible, light weight, processable at low temperature, and chromatically diverse. For those organic materials with favorable electronic structure and classified as semiconductors, these unique characteristics can be readily leveraged for functional electronic and optoelectronic applications. This thesis examines the wide scope of realizable device structures that are enabled by the processability and adaptability of these materials, focusing on photodiode devices designed for both the detection and the harvesting of optical energy. In the first part, two device structures are explored for their ability to output a photocurrent gain. Photocurrent gain, in which one incident photon gives rise to a multiple number of secondary photo-electrons cycled through an external circuit, is an important device property for applications that require the detection of low light signals and also those that require a more simplified electronic circuit. The field-effect transistor device structure is first studied, and it is found that although this structure can give rise to a small photocurrent gain up to G = 2, there are a number of trade-offs that may limit functionality. Next, a new multilayer organic photodiode structure is designed and studied that uses a carrier-selective confinement material to produce an extraordinarily efficient photoconductive gain mechanism, achieving G = 100-200 across the entire visible spectrum under a low applied bias (V = -3 V). The nature of the gain mechanism leads to relatively high bandwidth (f3dB = 1 kHz), and optimized devices are found to produce record gain-bandwidth product, up to GBP = 105, among organic photodetectors operating above imaging-compatible bandwidth (> 60 Hz). In the second part, the focus is shifted to organic photovoltaic devices. First, a new device structure is proposed that utilizes a photoluminescent external absorption antenna in order to down-convert part of

  5. Etat des lieux et perspectives du pin sylvestre en Wallonie

    OpenAIRE

    Thibaut, K.; Colson, Vincent; Lecomte, H.; Claessens, Hugues

    2007-01-01

    Si le pin sylvestre fut l’un des pionniers de la reforestation de nos contrées, l’engouement qu’il suscita au XIXe siècle semble aujourd’hui bien retombé. À travers l’analyse de la ressource disponible et d’une rapide enquête auprès des cantonnements de la DNF, l’article propose un état des lieux de cette essence et discute de ses perspectives dans le contexte actuel.

  6. Enhanced pinning in superconducting thin films with graded pinning landscapes

    Science.gov (United States)

    Motta, M.; Colauto, F.; Ortiz, W. A.; Fritzsche, J.; Cuppens, J.; Gillijns, W.; Moshchalkov, V. V.; Johansen, T. H.; Sanchez, A.; Silhanek, A. V.

    2013-05-01

    A graded distribution of antidots in superconducting a-Mo79Ge21 thin films has been investigated by magnetization and magneto-optical imaging measurements. The pinning landscape has maximum density at the sample border, decreasing linearly towards the center. Its overall performance is noticeably superior than that for a sample with uniformly distributed antidots: For high temperatures and low fields, the critical current is enhanced, whereas the region of thermomagnetic instabilities in the field-temperature diagram is significantly suppressed. These findings confirm the relevance of graded landscapes on the enhancement of pinning efficiency, as recently predicted by Misko and Nori [Phys. Rev. B 85, 184506 (2012)].

  7. Discussion about photodiode architectures for space applications

    Science.gov (United States)

    Gravrand, O.; Destefanis, G.; Cervera, C.; Zanatta, J.-P.; Baier, N.; Ferron, A.; Boulade, O.

    2017-11-01

    configuration is a low flux application but the need for speed distinguishes it from other low flux applications as it usually requires a different ROIC architecture and a photodiode optimized for high response speed.

  8. PinBus Interface Design

    Energy Technology Data Exchange (ETDEWEB)

    Hammerstrom, Donald J.; Adgerson, Jewel D.; Sastry, Chellury; Pratt, Richard M.; Pratt, Robert G.

    2009-12-30

    On behalf of the U.S. Department of Energy, PNNL has explored and expanded upon a simple control interface that might have merit for the inexpensive communication of smart grid operational objectives (demand response, for example) to small electric end-use devices and appliances. The approach relies on bi-directional communication via the electrical voltage states of from one to eight shared interconnection pins. The name PinBus has been suggested and adopted for the proposed interface protocol. The protocol is defined through the presentation of state diagrams and the pins’ functional definitions. Both simulations and laboratory demonstrations are being conducted to demonstrate the elegance and power of the suggested approach. PinBus supports a very high degree of interoperability across its interfaces, allowing innumerable pairings of devices and communication protocols and supporting the practice of practically any smart grid use case.

  9. MONJU fuel pin performance analysis

    International Nuclear Information System (INIS)

    Kitagawa, H.; Yamanaka, T.; Hayashi, H.

    1979-01-01

    Monju fuel pin has almost the same properties as other LMFBR fuel pins, i.e. Phenix, PFR, CRBR, but would be irradiated under severe conditions: maximum linear heat rate of 381 watt/cm, hot spot cladding temperature of 675 deg C, peak burnup of 131,000 MWd/t, peak fluence (E greater than 0.1 MeV) of 2.3 10 23 n/cm 2 . In order to understand in-core performance of Monju fuel pin, its thermal and mechanical behaviour was predicted using the fast running performance code SIMPLE. The code takes into account pellet-cladding interaction due to thermal expansion and swelling, gap conductance, structural changes of fuel pellets, fission product gas release with burnup and temperature increase, swelling and creep of fuel pellets, corrosion of cladding due to sodium flow and chemical attack by fission products, and cumulative damage of the cladding due to thermal creep

  10. New design of InGaAs guided-mode resonance photodiode for SWIR low dark current imaging

    Science.gov (United States)

    Verdun, Michaël.; Portier, Benjamin; Jaworowicz, Katarzyna; Jaeck, Julien; Dupuis, Christophe; Haidar, Riad; Pardo, Fabrice; Pelouard, Jean-Luc

    2016-04-01

    We investigate a full-dielectric guided mode resonant photodiode. It has been designed to enhance the absorption by excitation of several resonances in the SWIR domain. The device consists of an InP/InGaAs/InP P-i-N heterojunction containing an active layer as thin as 90 nm on top of a subwavelength lamellar grating and a gold mirror. We successfully compared the electro-optical characterizations of individual pixels with electro-magnetic simulations. In particular, we observe near perfect collection of the photo-carriers and external quantum efficiency (EQE) of up to 71% around 1.55 μm. Moreover, compared with InGaAs resonator state-of-the-art detector, we show a broader spectral response in the 1.2-1.7 μm range, thus paving the way for SWIR low dark current imaging.

  11. Study on avalanche photodiode influence on heterodyne laser interferometer linearity

    Science.gov (United States)

    Budzyn, Grzegorz; Podzorny, Tomasz

    2016-06-01

    In the paper we analyze factors reducing the possible accuracy of the heterodyne laser interferometers. The analysis is performed for the avalanche-photodiode input stages but is in main points valid also for stages with other type of photodetectors. Instrumental error originating from optical, electronic and digital signal processing factors is taken into consideration. We stress factors which are critical and those which can be neglected at certain accuracy requirements. In the work we prove that it is possible to reduce errors of the laser instrument below 1 nm point for multiaxial APD based interferometers by precise control of incident optical power and the temperature of the photodiode.

  12. Neutron irradiation studies of avalanche photodiodes using californium-252

    Science.gov (United States)

    Reucroft, S.; Rusack, R.; Ruuska, D.; Swain, J.

    1997-02-01

    Californium-252 is a convenient and copious source of neutrons of energies around 1 MeV, and provides many advantages over reactors for neutron irradiation studies of detector components. We describe here an experimental setup at Oak Ridge National Laboratory which has been constructed to study the performance of avalanche photodiodes in neutron fluences up to 10 13 neutrons/cm 2, similar to what is expected in parts of the CMS detector at the LHC. An irradiation study of some avalanche photodiodes is discussed, followed by a brief summary of results obtained.

  13. Characterization of new hexagonal large area Geiger Avalanche Photodiodes

    International Nuclear Information System (INIS)

    Boccone, V.; Aguilar, J.A.; Della Volpe, D.; Christov, A.; Montaruli, T.; Rameez, M.; Basili, A.

    2013-06-01

    Photomultipliers (PMTs) are the standard detector for construction of the current generation of imaging Atmospheric Cherenkov Telescopes (IACTs). Despite impressive improvements in QE and reliability in the last years, these devices suffer from the limitation of being unable to operate in the partially illuminated sky (during full or partial moon periods) as the excess light leads to a significant increase in the rate of ageing of the devices themselves and consequently limit the life of the camera. A viable alternative is the large area Geiger-mode avalanche photodiodes (G-APDs also known as Silicon Photomultipliers or SiPMs) that are commercially available from different producers in various types and dimensions. The sufficiency of the maturity of this technology for application to Cherenkov Astronomy has already been demonstrated by the FACT telescope. One of the camera designs under study for the 4 m Davies Cotton Telescope foresees the utilization of a large area G-APDs coupled to non imaging light concentrators. In collaboration with Hamamatsu and deriving from their current technology, we have designed a new hexagonal shaped large area G-APD HEX S12516 which when coupled to a Winston cone of 24 degrees cutting angle allows for a pixel angular resolution of 0.25 degrees for a f/D 1.4 telescope with a diameter of 4 m. The device, available in 2 different cell size configurations (50 μm and 100 μm), is divided into 4 different channels powered in common cathode mode. A temperature sensor was included for a better temperature evaluation in the characterization phase. The first 3 prototypes were fully characterized and the results are compared to the larger area devices commercially available such as the S10985-050C (2x2 array of 3x3 mm 2 G-APDs). The photo-detection efficiency is measured applying the Poisson statistics method using pulsed LED at 7 different wavelengths from 355 to 670 nm and for different bias over-voltages (V ov ). Optical crosstalk and

  14. Improved pinning regime by energetic ions using reduction of pinning potential

    Energy Technology Data Exchange (ETDEWEB)

    Weinstein, Roy; Gandini, Alberto; Sawh, Ravi-Persad; Parks, Drew; Mayes, Bill

    2003-05-15

    When ion damage is used to create pinning centers, full columnar pinning centers provide the largest pinning potential, U{sub pin}, but not the greatest J{sub c} or pinned field, B{sub pin}. Some of the characteristics of columnar defects which limit J{sub c} and B{sub pin} are discussed, including reduction of percolation path, and the need for a larger number of columns of damage, for pinning, than are usually estimated. It is concluded that columnar pinning centers are limited to B{sub pin}<4 T, and also severely reduce J{sub c}. Evidence is reviewed that aligned damage, or broken-columnar pinning centers, described herein, can provide orders of magnitude higher J{sub c}, and higher pinned field, despite providing lower U{sub pin}. A pinning center morphology is discussed which utilizes multiple-in-line-damage (MILD). For, e.g., present day large grain HTS J{sub c}, obtainable by MILD pinning, is estimated to be of the order of 10{sup 6} A/cm{sup 2} at 77 K, even when crystal plane alignment and weak links are not improved. Pinned field is increased by over an order of magnitude. An experiment is proposed to confirm these observations, and to directly compare MILD to columnar pinning centers. It will also determine the optimum MILD structure. Other measurements of interest, made possible by the same data set, are described.

  15. Multicenter Study of Pin Site Infections and Skin Complications Following Pinning of Pediatric Supracondylar Humerus Fractures.

    Science.gov (United States)

    Combs, Kristen; Frick, Steven; Kiebzak, Gary

    2016-12-03

    Pediatric supracondylar humerus fractures are the most common elbow fractures in pediatric patients. Surgical fixation using pins is the primary treatment for displaced fractures. Pin site infections may follow supracondylar humerus fracture fixation; the previously reported incidence rate in the literature is 2.34%, but there is significant variability in reported incidence rates of pin site infection. This study aims to define the incidence rate and determine pre-, peri-, and postoperative factors that may contribute to pin site infection following operative reduction, pinning, and casting. A retrospective chart analysis was performed over a one-year period on patients that developed pin site infection. A cast care form was added to Nemours' electronic medical records (EMR) system (Epic Systems Corp., Verona, WI) to identify pin site infections for retrospective review. The cast care form noted any inflamed or infected pins. Patients with inflamed or infected pin sites underwent a detailed chart review. Preoperative antibiotic use, number and size of pins used, method of postoperative immobilization, pin dressings, whether postoperative immobilization was changed prior to pin removal, and length of time pins were in place was recorded. A total of 369 patients underwent operative reduction, pinning, and casting. Three patients developed a pin site infection. The pin site infection incidence rate was 3/369=0.81%. Descriptive statistics were reported for the three patients that developed pin site infections and three patients that developed pin site complications. Pin site infection development is low. Factors that may contribute to the development of pin site infection include preoperative antibiotic use, length of time pins are left in, and changing the cast prior to pin removal.

  16. Suspension scheme for fuel pin

    International Nuclear Information System (INIS)

    Butts, C.E.; Gray, H.C.

    1975-01-01

    A description is presented of a nuclear fuel pin suspension arrangement comprising, in combination, a rod; a first beam member connected to said rod at one end; a plurality of parallel-spaced slidable fuel support plates attached to said first beam member, the longitudinal axis of first beam member being perpendicular to the longitudinal axis of each of said fuel support plates, a first coupling means disposed along the length of the first beam member for permitting slidable fuel support plates parallel movement with respect to the longitudinal axis of said first beam member, a second coupling means located at one end of each of slidable fuel plates for slidably engaging first coupling means of first beam member, a second beam member connected to the other end of each of parallel-spaced slidable fuel support plates and providing an extension, second beam member being provided with a third coupling means disposed along the length of second beam member at one end thereof; and a plurality of fuel pins provided with a fourth coupling means located at one end of each fuel pin for slidably engaging third coupling means of second beam member to permit each fuel pin parallel movement with respect to the longitudinal axis of second beam member. (U.S.)

  17. Fuel pin bowing in CAGR

    International Nuclear Information System (INIS)

    Crossland, I.G.

    1982-01-01

    Some of the more important mechanisms by which pin bowing can occur in Advanced Gas Cooled Reactors are examined. These include creep relaxation of the stresses which occur when thermal bowing is restrained and asymmetric axial clad creep. The clad temperature changes which accompany such bowing are also investigated and the theoretical results briefly compared with the empirical behaviour. (author)

  18. Microstrip PIN diode microwave switch

    OpenAIRE

    Usanov, Dmitry A.; Skripal, A. V.; Kulikov, M. Yu.

    2011-01-01

    A possibility of creating narrow-band electrically controlled microwave breakers and switches with enhanced attenuation level in the blocking mode has been considered. The specified devices are based on the structure containing a short-circuited microstrip link with connected capacitor and the loop coupler, in the center of which is located a PIN diode.

  19. Prototype for the measurement of parameters in the Mammography Unity using photodiodes

    International Nuclear Information System (INIS)

    Mercado H, I.; Ramirez J, F.J.; Tovar M, V.; Becerril V, A.

    1999-01-01

    It has been developed a prototype which makes possible to measure the kilo voltage applied to the X-ray tube, the exposure time of the radiation beam and the yield expressed in kerma in air K a (mGy/m As) o a mammography unit. The instrument consists of a radiation detector, an acquisition circuit, a stage of analogical processing of the signal connected to an analogic-digital converter and a display system of the results. The detection section is composed by a pair of photodiodes PIN type in which to do make the measurement of kilo voltage one of them is covered by an aluminium filter (Al) and the other one by a molybdenum filter (Mo). The measurements were done in a mammography unit which possess a generator of high frequency, with a molybdenum anode, a window 8 mm Beryllium (Be) and an additional filtration of 30 μ m Mo. The measurements obtained were compared with commercial instruments finding maximum variations of 2 % of value obtained. This prototype has been developed with the idea to obtain in a future a commercial instrument, for be used mainly in the hospitable institutions as an auxiliary tool in the Quality assurance programs in radiodiagnostic. (Author)

  20. Noise and oscillations in gold-doped germanium photodiodes

    NARCIS (Netherlands)

    Bolwijn, P.T.; Rijst, C. v. d.; Ast, W.G. van; Lam, T.

    Considerable noise effects in excess of shot noise and oscillations found in commercially available, gold-doped germanium photodiodes have been investigated. The noise and oscillation effects occur in the photocurrent of reversely biased diodes at temperatures below about 100°K. The dependence of

  1. Automated Characterization of Single-Photon Avalanche Photodiode

    Directory of Open Access Journals (Sweden)

    Aina Mardhiyah M. Ghazali

    2012-01-01

    Full Text Available We report an automated characterization of a single-photon detector based on commercial silicon avalanche photodiode (PerkinElmer C30902SH. The photodiode is characterized by I-V curves at different illumination levels (darkness, 10 pW and 10 µW, dark count rate and photon detection efficiency at different bias voltages. The automated characterization routine is implemented in C++ running on a Linux computer. ABSTRAK: Kami melaporkan pencirian pengesan foton tunggal secara automatik berdasarkan kepada diod foto runtuhan silikon (silicon avalanche photodiode (PerkinElmer C30902SH komersial. Pencirian  diod foto adalah berdasarkan kepada plot arus-voltan (I-V pada tahap pencahayaan yang berbeza (kelam - tanpa cahaya, 10pW, dan 10µW, kadar bacaan latar belakang, kecekapan pengesanan foton pada voltan picuan yang berbeza. Pengaturcaraan C++ digunakan di dalam rutin pencirian automatik melalui komputer dengan sistem pengendalian LINUX.KEYWORDS: avalanche photodiode (APD; single photon detector; photon counting; experiment automation

  2. Visible light photodiodes and photovoltages from detonation nanodiamonds

    Czech Academy of Sciences Publication Activity Database

    Rezek, Bohuslav; Stehlík, Štěpán; Kromka, Alexander; Arnault, J.-C.; Weis, M.; Jakabovič, J.

    2016-01-01

    Roč. 1, č. 14 (2016), s. 971-975 ISSN 2059-8521 R&D Projects: GA ČR GA15-01809S Institutional support: RVO:68378271 Keywords : nanodiamond * photodiode Subject RIV: BM - Solid Matter Physics ; Magnetism

  3. Applications of a silicon photodiode detector for radon progeny measurements

    CERN Document Server

    Voytchev, M; Chambaudet, A; Georgiev, G; Iovtchev, M

    1999-01-01

    An application of our developed silicon photodiode detector for radon progeny measurements is presented in this paper. It was determined the deposition velocity for free (3.6+-0.7)x10 sup - sup 3 m s sup - sup 1 and attached (1.0+-0.5)x10 sup - sup 5 m s sup - sup 1 fraction of short living radon progeny.

  4. Large Format Geiger Mode Avalanche Photodiode Arrays and Readout Circuits

    Science.gov (United States)

    2017-06-01

    efficiency. The pixels in early CMOS designs effectively contained a “stop watch ” – circuitry operating at fast clock frequencies required to...Ghioni, A. Lacaita, C. Samori, and F. Zappa, "Avalanche photodiodes and quenching circuits for single-photon detection," Appl . Opt. 35, 1956-1976

  5. Integrated thin film Si fluorescence sensor coupled with a GaN microLED for microfluidic point-of-care testing

    Science.gov (United States)

    Robbins, Hannah; Sumitomo, Keiko; Tsujimura, Noriyuki; Kamei, Toshihiro

    2018-02-01

    An integrated fluorescence sensor consisting of a SiO2/Ta2O5 multilayer optical interference filter and hydrogenated amorphous silicon (a-Si:H) pin photodiode was coupled with a GaN microLED to construct a compact fluorescence detection module for point-of-care microfluidic biochemical analysis. The combination of the small size of the GaN microLED and asymmetric microlens resulted in a focal spot diameter of the excitation light of approximately 200 µm. The limit of detection of the sensor was as high as 36 nM for fluorescein solution flowing in a 100 µm deep microfluidic channel because of the lack of directionality of the LED light. Nevertheless, we used the GaN microLED coupled with the a-Si:H fluorescence sensor to successfully detect fluorescence from a streptavidin R-phycoerythrin conjugate that bound to biotinylated antibody-coated microbeads trapped by the barrier in the microfluidic channel.

  6. Self-shearing retentive pins: a laboratory evaluation of pin channel penetration before shearing.

    Science.gov (United States)

    Barkmeier, W W; Cooley, R L

    1979-09-01

    This laboratory study determined the depth reached by self-shearing pins in dentin pin channels. Pin channels were prepared with the self-limiting shoulder twist drill for each of the four systems tested. Mean channel depth reached for the various pin systems was: Stabilok (small), 2.31 mm; Stabilok (medium), 1.78 mm; Reten Pin, 1.40 mm; and TMS (Regular), 2.04 mm. A coparison was also made by calculating the mean percent of penetration in relation to the depth of prepared pin channel: Stabilok (small), 92.50%; Stabilok (medium), 63.62%; Reten Pin, 66.67%; and TMS (Regular) 81.75%.

  7. The PIN-FORMED (PIN) protein family of auxin transporters

    Czech Academy of Sciences Publication Activity Database

    Křeček, Pavel; Skůpa, Petr; Libus, Jiří; Naramoto, S.; Tejos, R.; Friml, J.; Zažímalová, Eva

    2009-01-01

    Roč. 10, č. 12 (2009), s. 249.1-249.11 ISSN 1474-760X R&D Projects: GA MŠk(CZ) LC06034; GA AV ČR KJB600380904; GA AV ČR(CZ) IAA601630703 Institutional research plan: CEZ:AV0Z50380511 Keywords : PIN protein family * auxin efflux carriers * auxin transport Subject RIV: EB - Genetics ; Molecular Biology Impact factor: 6.626, year: 2009

  8. Four-quadrant silicon and silicon carbide photodiodes for beam position monitor applications: electrical characterization and electron irradiation effects

    Science.gov (United States)

    Rafí, J. M.; Pellegrini, G.; Godignon, P.; Quirion, D.; Hidalgo, S.; Matilla, O.; Fontserè, A.; Molas, B.; Takakura, K.; Tsunoda, I.; Yoneoka, M.; Pothin, D.; Fajardo, P.

    2018-01-01

    Silicon photodiodes are very useful devices as X-ray beam monitors in synchrotron radiation beamlines, as well as other astronomy and space applications. Owing to their lower susceptibility to variable temperature and illumination conditions, there is also special interest in silicon carbide devices for some of these applications. Moreover, radiation hardness of the involved technologies is a major concern for high-energy physics and space applications. This work presents four-quadrant photodiodes produced on ultrathin (10 μm) and bulk Si, as well as on SiC epilayer substrates. An extensive electrical characterization has been carried out by using current-voltage (I-V) and capacitance-voltage (C-V) techniques. The impact of different temperature (from ‑50oC to 175oC) and visible light conditions on the electrical characteristics of the devices has been evaluated. Radiation effects caused by 2 MeV electron irradiation up to 1×1014, 1×1015 and 1×1016 e/cm2 fluences have been studied. Special attention has been devoted to the study of charge build-up in diode interquadrant isolation, as well as its impact on interquadrant resistance. The study of these electrical properties and its radiation-induced degradation should be taken into account for device applications.

  9. Testing of the KRI-developed Silicon PIN Radioxenon Detector

    International Nuclear Information System (INIS)

    Foxe, Michael P.; McIntyre, Justin I.

    2015-01-01

    Radioxenon detectors are used for the verification of the Comprehensive Nuclear-Test-Ban Treaty (CTBT) in a network of detectors throughout the world called the International Monitoring System (IMS). The Comprehensive Nuclear-Test-Ban Treaty Organization (CTBTO) Provisional Technical Secretariat (PTS) has tasked Pacific Northwest National Laboratory (PNNL) with testing a V.G. Khlopin Radium Institute (KRI) and Lares Ltd-developed Silicon PIN detector for radioxenon detection. PNNL measured radioxenon with the silicon PIN detector and determined its potential compared to current plastic scintillator beta cells. While the PNNL tested Si detector experienced noise issues, a second detector was tested in Russia at Lares Ltd, which did not exhibit the noise issues. Without the noise issues, the Si detector produces much better energy resolution and isomer peak separation than a conventional plastic scintillator cell used in the SAUNA systems in the IMS. Under the assumption of 1 cm 3 of Xe in laboratory-like conditions, 24-hr count time (12-hr count time for the SAUNA), with the respective shielding the minimum detectable concentrations for the Si detector tested by Lares Ltd (and a conventional SAUNA system) were calculated to be: 131m Xe - 0.12 mBq/m 3 (0.12 mBq/m 3 ); 133 Xe - 0.18 mBq/m 3 (0.21 mBq/m 3 ); 133m Xe - 0.07 mBq/m 3 (0.15 mBq/m 3 ); 135 Xe - 0.45 mBq/m 3 (0.67 mBq/m 3 ). Detection limits, which are one of the important factors in choosing the best detection technique for radioxenon in field conditions, are significantly better than for SAUNA-like detection systems for 131m Xe and 133m Xe, but similar for 133 Xe and 135 Xe. Another important factor is the amount of ''memory effect'' or carry over signal from one radioxenon measurement to the subsequent sample. The memory effect is reduced by a factor of 10 in the Si PIN detector compared to the current plastic scintillator cells. There is potential for further reduction with the

  10. Modeling and simulation of 4H-SiC field effect transistor

    Science.gov (United States)

    Pedryc, A.; Martychowiec, A.; Kociubiński, A.

    2017-08-01

    This paper presents the technological issue of silicon carbide MOSFET design. Through the use of simulations of silicon carbide transistor, the influence of the different the technological parameters are described and discussed. MOSFET transistor was performed in Silvaco TCAD using technology elaborated at Lublin University of Technology. The most important parameters related to ion implantation, which was used in p-i-n photodiode technology. The electrical simulations were performed, transfer and output characteristics for different values of technological parameters were generated - influence of gate oxide thickness on threshold voltage and influence of channel length modulation were checked. The results of simulations as well as transfer and output characteristics allowed to select optimal parameters between expected device working and available technology - gate oxide thickness and transistor channel length were established. This work was in fact carried out to increase our understanding of the device characteristics so as to allow the design of new SiC circuits which could meet the stressful requirements of ultraviolet detector systems.

  11. A 75 GHz silicon metal-semiconductor-metal Schottky photodiode

    International Nuclear Information System (INIS)

    Alexandrou, S.; Wang, C.; Hsiang, T.Y.; Liu, M.Y.; Chou, S.Y.

    1993-01-01

    The ultrafast characteristics of crystalline-silicon metal-semiconductor-metal (MSM) photodiodes with 300 nm finger width and spacing were measured with a subpicosecond electro-optic sampling system. Electrical responses with full width at half maximum as short as 5.5 and 11 ps, at corresponding 3 dB bandwidths of 75 and 38 GHz, were generated by violet and red photons, respectively. The difference is attributed to the photon penetration depth which is much larger than the diode finger spacing at red, but smaller at violet. Light-intensity dependence was also examined at different wavelengths, indicating a linear relation and a higher sensitivity in the violet. These results not only demonstrated the fastest silicon photodetector reported to date, but also pinpointed the dominant speed-limiting factor of silicon MSM photodiodes. A configuration is suggested to improve the speed of these detectors at long wavelengths

  12. Experimental verification of the photodiode theory of SIS mixers

    Science.gov (United States)

    Woody, David P.; Wengler, Michael J.

    1993-01-01

    The authors describe the characterization and interpretation of the performance of SIS receivers within the framework of the photodiode theory of mixing. The quantum efficiency plays a dominant role in the theory, and a simple method of accurately measuring this parameter is presented. It is demonstrated that the quantum efficiency measurements can be conveniently made on a standard radio astronomy receiver and combined with the usual hot and cold load characterization to improve the understanding of the receiver's performance. The measurements verify that the photodiode theory of mixing accurately describes the receiver noise even at local-oscillator power levels well above the linear response range. The results for receivers operating at 100 and 240 GHz verify the utility of this approach. These methods should also prove useful in evaluating submillimeter receivers.

  13. Quantitative Analysis of Spectral Impacts on Silicon Photodiode Radiometers: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Myers, D. R.

    2011-04-01

    Inexpensive broadband pyranometers with silicon photodiode detectors have a non-uniform spectral response over the spectral range of 300-1100 nm. The response region includes only about 70% to 75% of the total energy in the terrestrial solar spectral distribution from 300 nm to 4000 nm. The solar spectrum constantly changes with solar position and atmospheric conditions. Relative spectral distributions of diffuse hemispherical irradiance sky radiation and total global hemispherical irradiance are drastically different. This analysis convolves a typical photodiode response with SMARTS 2.9.5 spectral model spectra for different sites and atmospheric conditions. Differences in solar component spectra lead to differences on the order of 2% in global hemispherical and 5% or more in diffuse hemispherical irradiances from silicon radiometers. The result is that errors of more than 7% can occur in the computation of direct normal irradiance from global hemispherical irradiance and diffuse hemispherical irradiance using these radiometers.

  14. Dark current spectroscopy of space and nuclear environment induced displacement damage defects in pinned photodiode based CMOS image sensors

    International Nuclear Information System (INIS)

    Belloir, Jean-Marc

    2016-01-01

    CMOS image sensors are envisioned for an increasing number of high-end scientific imaging applications such as space imaging or nuclear experiments. Indeed, the performance of high-end CMOS image sensors has dramatically increased in the past years thanks to the unceasing improvements of microelectronics, and these image sensors have substantial advantages over CCDs which make them great candidates to replace CCDs in future space missions. However, in space and nuclear environments, CMOS image sensors must face harsh radiation which can rapidly degrade their electro-optical performances. In particular, the protons, electrons and ions travelling in space or the fusion neutrons from nuclear experiments can displace silicon atoms in the pixels and break the crystalline structure. These displacement damage effects lead to the formation of stable defects and to the introduction of states in the forbidden bandgap of silicon, which can allow the thermal generation of electron-hole pairs. Consequently, non ionizing radiation leads to a permanent increase of the dark current of the pixels and thus a decrease of the image sensor sensitivity and dynamic range. The aim of the present work is to extend the understanding of the effect of displacement damage on the dark current increase of CMOS image sensors. In particular, this work focuses on the shape of the dark current distribution depending on the particle type, energy and fluence but also on the image sensor physical parameters. Thanks to the many conditions tested, an empirical model for the prediction of the dark current distribution induced by displacement damage in nuclear or space environments is experimentally validated and physically justified. Another central part of this work consists in using the dark current spectroscopy technique for the first time on irradiated CMOS image sensors to detect and characterize radiation-induced silicon bulk defects. Many types of defects are detected and two of them are identified, proving the applicability of this technique to study the nature of silicon bulk defects using image sensors. In summary, this work advances the understanding of the nature of the radiation-induced defects responsible for the dark current increase in space or nuclear environments. It also leads the way to the design of more advanced dark current prediction models, or to the development of mitigation strategies in order to prevent the formation of the responsible defects or to allow their removal. (author) [fr

  15. Measurement of nuclear resonant scattering on 61Ni with fast scintillation detector using proportional-mode silicon avalanche photodiode

    Science.gov (United States)

    Inoue, Keisuke; Kobayashi, Yasuhiro; Yoda, Yoshitaka; Koshimizu, Masanori; Nishikido, Fumihiko; Haruki, Rie; Kishimoto, Shunji

    2018-02-01

    We developed a new scintillation timing detector using a proportional-mode silicon avalanche photodiode (Si-APD) for synchrotron radiation nuclear resonant scattering. We report on the nuclear forward scattering measurement on 61Ni with a prototype detector using a lead-loaded plastic scintillator (EJ-256, 3 mm in diameter and 2 mm in thickness), mounted on a proportional-mode Si-APD. Using synchrotron X-rays of 67.41 keV, we successfully measured the time spectra of nuclear forward scattering on 61Ni enriched metal foil and 61Ni86V14 alloy. The prototype detector confirmed the expected dynamical beat structure with a time resolution of 0.53 ns (FWHM).

  16. Novel micropixel avalanche photodiodes (MAPD) with super high pixel density

    International Nuclear Information System (INIS)

    Anfimov, N.; Chirikov-Zorin, I.; Dovlatov, A.; Gavrishchuk, O.; Guskov, A.; Khovanskiy, N.; Krumshtein, Z.; Leitner, R.; Meshcheryakov, G.; Nagaytsev, A.; Olchevski, A.; Rezinko, T.; Sadovskiy, A.; Sadygov, Z.; Savin, I.; Tchalyshev, V.; Tyapkin, I.; Yarygin, G.; Zerrouk, F.

    2011-01-01

    In many detectors based on scintillators the photomultiplier tubes (PMTs) are used as photodetectors. At present photodiodes are finding wide application. Solid state photodetectors allow operation in strong magnetic fields that are often present in applications, e.g. some calorimeters operating near magnets, combined PET and MRT, etc. The photon detection efficiency (PDE) of photodiodes may reach values a few times higher than that of PMTs. Also, they are rigid, compact and have relatively low operating voltage. In the last few years Micropixel Avalanche PhotoDiodes (MAPD) have been developed and started to be used. The MAPD combines a lot of advantages of semiconductor photodetectors and has a high gain, which is close to that of the PMT. Yet, they have some disadvantages, and one of them is a limited dynamic range that corresponds to a total number of pixels. The novel deep microwell MAPD with high pixel density produced by the Zecotek Company partially avoids this disadvantage. In this paper characteristics of these photodetectors are presented in comparison with the PMT characteristics. The results refer to measurements of the gain, PDE, cross-talks, photon counting and applications: beam test results of two different 'Shashlyk' EM calorimeters for COMPASS (CERN) and NICA-MPD (JINR) with the MAPD readout and a possibility of using the MAPD in PET.

  17. III-V strain layer superlattice based band engineered avalanche photodiodes (Presentation Recording)

    Science.gov (United States)

    Ghosh, Sid

    2015-08-01

    Laser detection and ranging (LADAR)-based systems operating in the Near Infrared (NIR) and Short Wave Infrared (SWIR) have become popular optical sensors for remote sensing, medical, and environmental applications. Sophisticated laser-based radar and weapon systems used for long-range military and astronomical applications need to detect, recognize, and track a variety of targets under a wide spectrum of atmospheric conditions. Infrared APDs play an important role in LADAR systems by integrating the detection and gain stages in a single device. Robust silicon-APDs are limited to visible and very near infrared region ( 3um) infrared photon detection applications. Recently, various research groups (including Ghosh et. al.) have reported SWIR and MWIR HgCdTe APDs on CdZnTe and Si substrates. However, HgCdTe APDs suffer from low breakdown fields due to material defects, and excess noise increases significantly at high electric fields. During the past decade, InAs/GaSb Strain Layer Superlattice (SLS) material system has emerged as a potential material for the entire infrared spectrum because of relatively easier growth, comparable absorption coefficients, lower tunneling currents and longer Auger lifetimes resulting in enhanced detectivities (D*). Band engineering in type II SLS allows us to engineer avalanche properties of electrons and holes. This is a great advantage over bulk InGaAs and HgCdTe APDs where engineering avalanche properties is not possible. The talk will discuss the evolution of superlattice based avalanche photodiodes and some of the recent results on the work being done at Raytheon on SWIR avalanche photodiodes.

  18. Electronic response of a photodiode coupled to a boron thin film

    Energy Technology Data Exchange (ETDEWEB)

    Costa, Priscila; Costa, Fabio E.; Raele, Marcus P.; Zahn, Guilherme S.; Geraldo, Bianca; Vieira Junior, Nilson D.; Samad, Ricardo E.; Genezini, Frederico A., E-mail: priscila3.costa@usp.br, E-mail: fredzini@ipen.br [Instituto de Pesquisas Energéticas e Nucleares (IPEN/CNEN-SP), São Paulo, SP (Brazil)

    2017-07-01

    A portable thermal neutron detector is proposed in this work using a silicon photodiode coupled to a boron thin film. The aim of this work was to verify the effect in the electronic response of this specific photodiode due to boron deposition, since the direct deposition of boron in the semiconductor surface could affect its electrical properties specifically the p-type layer that affects directly the depletion region of the semiconductor reducing the neutron detector efficiency count. Three boron depositions with different thickness were performed in the photodiode (S3590-09) surface by pulsed laser deposition and the photodiode was characterized, before and after the deposition process, using a radioactive americium source. Energy spectra were used to verify the electronic response of the photodiode, due to the fact that it is possible to relate it to the photopeak pulse height and resolution. Spectra from the photodiode without and with boron film deposition were compared and a standard photodiode (S3590-04) that had the electronic signal conserved was used as reference to the pulse height for electronics adjustments. The photopeak energy resolution for the photodiode without boron layer was 10.26%. For the photodiode with boron deposition at different thicknesses, the resolution was: 7.64 % (0.14 μm), 7.30 % (0.44 μm) and 6.80 % (0.63 μm). From these results it is possible to evaluate that there was not any degradation in the silicon photodiode. (author)

  19. SiCGe/SiC heterojunction and its MEDICI simulation of optoelectronic characteristics

    Science.gov (United States)

    Lü, Zheng; Chen, Zhi-Ming; Pu, Hong-Bin

    2005-06-01

    Optoelectronic characteristics of the SiC1-xGex /SiC heterojunction photodiode are simulated using MEDICI after the theoretical investigation of key properties for SiC1-xGex. The calculations show that SiC1-xGex /SiC with x=0.3 may have a small lattice mismatch with 3C-SiC and a good response to the visible light and the near infrared light. The response spectrum of the SiC1-xGex /SiC heterojunction photodiode, which consists of a p-type SiC1-xGex absorption layer with a doping concentration of 1×1015cm-3, a thickness of 1.6μm and x=0.3, has a peak of 250mA/W at 0.52μm and the peak can even reach 102mA/W at 0.7μm.

  20. Unicortical self-drilling external fixator pins reduce thermal effects during pin insertion.

    Science.gov (United States)

    Greinwald, Markus; Varady, Patrick A; Augat, Peter

    2017-12-14

    External fixation is associated with the risk of pin loosening and pin infection potentially associated to thermal bone necrosis during pin insertion. This study aims to investigate if the use of external fixator systems with unicortical pins reduces the heat production during pin insertion compared to fixators with bicortical pins. Porcine bone specimens were employed to determine bone temperatures during insertion of fixator pins. Two thermographic cameras were used for a simultaneous temperature measurement on the bone surface (top view) and a bone cross-section (front view). Self-drilling unicortical and bicortical pins were inserted at different rotational speeds: (30-600) rpm. Maximum and mean temperatures of the emerging bone debris, bone surface and bone cross-section were analyzed. Maximum temperatures of up to 77 ± 26 °C were measured during pin insertion in the emerging debris and up to 42 ± 2 °C on the bone surface. Temperatures of the emerging debris increased with increasing rotational speeds. Bicortical pin insertion generated significantly higher temperatures at low insertion speed (30 rpm) CONCLUSION: The insertion of external fixator pins can generate a considerable amount of heat around the pins, primarily emerging from bone debris and at higher insertion speeds. Our findings suggest that unicortical, self-drilling fixator pins have a decreased risk for thermal damage, both to the surrounding tissue and to the bone itself.

  1. Pin Wire Coating Trip Report

    International Nuclear Information System (INIS)

    Spellman, G P

    2004-01-01

    A meeting to discuss the current pin wire coating problems was held at the Reynolds plant in Los Angeles on 2MAR04. The attendance list for Reynolds personnel is attached. there was an initial presentation which gave a brief history and the current status of pin wire coating at Reynolds. There was a presentation by Lori Primus on the requirements and issues for the coating. There was a presentation by Jim Smith of LANL on the chemistry and to some extent process development done to date. There was a long session covering what steps should be taken in the short term and, to a lesser extent, the long term. The coating currently being used is a blend of two polymers, polyethersulfone and polyparabanic acid (PPA) and some TiO2 filler. This system was accepted and put into production when the pin wire coating was outsourced to another company in 1974. When that company no longer was interested, the wire coating was brought in-house to Reynolds. At that time polyparabanic acid was actually a commercial product available from Exxon under the trade name Tradlon. However, it appears that the material used at Reynolds was synthesized locally. Also, it appears that a single large batch was synthesized in that time period and used up to 1997 when the supply ran out. The reason for the inclusion of TiO2 is not known although it does act as a rheological thickener. However, a more controlled thickening can be obtained with materials such as fumed silica. This material would have less likelihood of causing point imperfections in the coatings. Also, the mixing technique being used for all stages of the process is a relatively low shear ball mill process and the author recommends a high shear process such as a three roll paint mill, at least for the final mixing. Since solvent is added to the powder at Reynolds, it may be that they need to have the paint mill there

  2. Heat Exchanger With Internal Pin Elements

    Science.gov (United States)

    Gerstmann, Joseph; Hannon, Charles L.

    2004-01-13

    A heat exchanger/heater comprising a tubular member having a fluid inlet end, a fluid outlet end and plurality of pins secured to the interior wall of the tube. Various embodiments additionally comprise a blocking member disposed concentrically inside the pins, such as a core plug or a baffle array. Also disclosed is a vapor generator employing an internally pinned tube, and a fluid-heater/heat-exchanger utilizing an outer jacket tube and fluid-side baffle elements, as well as methods for heating a fluid using an internally pinned tube.

  3. Magnetic pinning in superconductor-ferromagnet multilayers

    International Nuclear Information System (INIS)

    Bulaevskii, L. N.; Chudnovsky, E. M.; Maley, M. P.

    2000-01-01

    We argue that superconductor/ferromagnet multilayers of nanoscale period should exhibit strong pinning of vortices by the magnetic domain structure in magnetic fields below the coercive field when ferromagnetic layers exhibit strong perpendicular magnetic anisotropy. The estimated maximum magnetic pinning energy for single vortex in such a system is about 100 times larger than the pinning energy by columnar defects. This pinning energy may provide critical currents as high as 10 6 -10 7 A/cm 2 at high temperatures (but not very close to T c ) at least in magnetic fields below 0.1 T. (c) 2000 American Institute of Physics

  4. Magnetic pinning in superconductor-ferromagnet multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Bulaevskii, L. N. [Department of Physics and Astronomy, CUNY Lehman College 250 Bedford Park Boulevard West, Bronx, New York 10468-1589 (United States); Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Chudnovsky, E. M. [Department of Physics and Astronomy, CUNY Lehman College, 250 Bedford Park Boulevard West, Bronx, New York 10468-1589 (United States); Maley, M. P. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    2000-05-01

    We argue that superconductor/ferromagnet multilayers of nanoscale period should exhibit strong pinning of vortices by the magnetic domain structure in magnetic fields below the coercive field when ferromagnetic layers exhibit strong perpendicular magnetic anisotropy. The estimated maximum magnetic pinning energy for single vortex in such a system is about 100 times larger than the pinning energy by columnar defects. This pinning energy may provide critical currents as high as 10{sup 6}-10{sup 7} A/cm{sup 2} at high temperatures (but not very close to T{sub c}) at least in magnetic fields below 0.1 T. (c) 2000 American Institute of Physics.

  5. Integral Fast Reactor fuel pin processor

    International Nuclear Information System (INIS)

    Levinskas, D.

    1993-01-01

    This report discusses the pin processor which receives metal alloy pins cast from recycled Integral Fast Reactor (IFR) fuel and prepares them for assembly into new IFR fuel elements. Either full length as-cast or precut pins are fed to the machine from a magazine, cut if necessary, and measured for length, weight, diameter and deviation from straightness. Accepted pins are loaded into cladding jackets located in a magazine, while rejects and cutting scraps are separated into trays. The magazines, trays, and the individual modules that perform the different machine functions are assembled and removed using remote manipulators and master-slaves

  6. Fast silicon drift photodiodes free from bias connections on the light entering side

    CERN Document Server

    Castoldi, A; Gatti, E; Holl, P; Rehak, P

    2000-01-01

    A new type of silicon drift photodiode intended to be coupled to large area scintillators is described. The diodes have a relatively large area (1 cm sup 2) and a short maximal drift time (300 ns). They operate without requiring any external electrical connection at the side of the photodiode coupled to the scintillating crystal. These new photodiodes have almost identical ring structures on both sides with individual rings being at linearly increasing potentials providing the required high electric drift field. A new feature of the presented photodiodes is a small modification of the electrode structure near the signal collecting anode. It allows a full depletion of the photodiode and the highest drift field. Advantages and drawbacks of this kind of photodiodes are described.

  7. Fast silicon drift photodiodes free from bias connections on the light entering side

    Energy Technology Data Exchange (ETDEWEB)

    Castoldi, A.; Chen, W.; Gatti, E.; Holl, P.; Rehak, P. E-mail: rehak2@bnl.gov

    2000-01-11

    A new type of silicon drift photodiode intended to be coupled to large area scintillators is described. The diodes have a relatively large area (1 cm{sup 2}) and a short maximal drift time (300 ns). They operate without requiring any external electrical connection at the side of the photodiode coupled to the scintillating crystal. These new photodiodes have almost identical ring structures on both sides with individual rings being at linearly increasing potentials providing the required high electric drift field. A new feature of the presented photodiodes is a small modification of the electrode structure near the signal collecting anode. It allows a full depletion of the photodiode and the highest drift field. Advantages and drawbacks of this kind of photodiodes are described.

  8. A theory for the nonlinear response of high power p-i-n photodetectors

    Science.gov (United States)

    Herbert, D. C.; Chidley, E.; Allenson, M.; Wight, D.

    1998-07-01

    A new physics based model is developed for the small signal and large signal high current response of p-i-n photodetectors. The numerical treatment is not constrained by the numerical stability requirements of conventional treatments of the time-dependent drift-diffusion equations. The results confirm the finding of other authors in predicting the formation of an extended low field region at high currents, with consequent collapse of the frequency response. Comparison with available experimental data for GaAs based photodiodes suggests that 2D effects are important in the high current limit, but can be allowed for within the 1D model by reducing the calculated particle velocity in the low field region.

  9. A Novel Ring Shaped Photodiode for Reflectance Pulse Oximetry in Wireless Applications

    DEFF Research Database (Denmark)

    Duun, Sune; Haahr, Rasmus Grønbek; Birkelund, Karen

    2007-01-01

    We present a pulse oximeter for use in home-care applications in a sticking patch with integrated electronics. The core in the pulse oximeter is a large ring shaped backside silicon pn photodiode placed around a Ledtronics dual LED with wavelengths of 660 nm and 940 nm. The concentric photodiode...... photodiode has an inner-outer radius of 3.29 -4.07 mm and an area of 18 mm2 , however, photodiodes with ring center radii ranging from 2.8 -4.9 mm have been fabricated. Using the pulse oxymetry sensor photoplethysmograms clearly showing the cardiovascular cycle are recorded. An on-chip integrated Au...

  10. Failure Analysis of Electrical Pin Connectors

    Science.gov (United States)

    Newman, John A.; Baughman, James M.; Smith, Stephen W.; Herath, Jeffrey A.

    2008-01-01

    A study was initiated to determine the root cause of failure for circuit board electrical connection pins that failed during vibRatory testing. The circuit board is part of an unmanned space probe, and the vibratory testing was performed to ensure component survival of launch loading conditions. The results of this study show that the pins failed as a result of fatigue loading.

  11. Jig Quickly Checks Connector Pin Alinement

    Science.gov (United States)

    Hall, W. M.; Papac, T. P.

    1983-01-01

    Test jig checks whether pins of connector are within location tolerance. Jig greatly reduces test time. Machined slots on opposite faces of plate form matrix of rectangular windows at intersections. If connector pin is out of alinement, it makes electrical contact with side of window, triggering indicator.

  12. Pin potential effect on vortex pinning in YBa2Cu3O7-δ films containing nanorods: Pin size effect and mixed pinning

    Science.gov (United States)

    Horide, Tomoya; Matsukida, Naoki; Ishimaru, Manabu; Kita, Ryusuke; Awaji, Satoshi; Matsumoto, Kaname

    2017-01-01

    The pin size effect and mixed pinning of nanorods and matrix defects are discussed for YBa2Cu3O7-δ films containing nanorods. BaSnO3 nanorods with a diameter of 11 nm and BaHfO3 nanorods with a diameter of 7 nm were prepared, and critical current density (Jc) and resistivity were measured in the films. When the coherence length was larger than the nanorod size at high temperatures near the critical temperature, the trapping angle and activation energy of the vortex flow depended on the nanorod diameter. At a moderate temperature of 65-77 K, the pin size effect on Jc disappeared since the coherence length became smaller than the nanorod size. At a low temperature of 20 K, the contribution from matrix pinning became comparable to that of nanorods in a high magnetic field due to the small coherence length. Thus, the temperature-dependent coherence length caused the pin potential situation to vary significantly, namely, the pin size effect and mixed pinning, which strongly affected vortex pinning in YBa2Cu3O7-δ containing nanorods.

  13. Development of instrumentation for fuel pin scanner

    International Nuclear Information System (INIS)

    Saisubalakshmi, D.; Parthasarathy, R.; Brahmaji Rao, J.S.; Senthilvadivu, E.; Seshadreesan, N.P.

    2011-01-01

    A study is being carried out using a surrogate vibro-packed fuel pin with micro-spheres of two different sizes to get the density distribution by gamma transmission technique. A shielded (with 2 mm slit of ∼ 2''SS collimator) LaBr scintillation detector is used as the detector system. A strong 137 Cs source is used as the source. The source strength as it is transmitted through the fuel pin is measured by the scintillation detector. The entire length of the fuel pin is gradually moved up from one end to other end and the detector is allowed to continuously examine the transmission profile of the fuel pin. The instrumentation for the fuel pin scanner has been developed and is integrated with the system. The instrumentation includes microcontroller based motor control system and customized detector pulse counting systems. The systems are interfaced to a computer through serial communication. (author)

  14. TACO: fuel pin performance analysis

    International Nuclear Information System (INIS)

    Stoudt, R.H.; Buchanan, D.T.; Buescher, B.J.; Losh, L.L.; Wilson, H.W.; Henningson, P.J.

    1977-08-01

    The thermal performance of fuel in an LWR during its operational lifetime must be described for LOCA analysis as well as for other safety analyses. The determination of stored energy in the LOCA analysis, for example, requires a conservative fuel pin thermal performance model that is capable of calculating fuel and cladding behavior, including the gap conductance between the fuel and cladding, as a function of burnup. The determination of parameters that affect the fuel and cladding performance, such as fuel densification, fission gas release, cladding dimensional changes, fuel relocation, and thermal expansion, should be accounted for in the model. Babcock and Wilcox (B and W) has submitted a topical report, BAW-10087P, December 1975, which describes their thermal performance model TACO. A summary of the elements that comprise the TACO model and an evaluation are presented

  15. Micro-pixels avalanche photodiodes as radiation detector

    International Nuclear Information System (INIS)

    Ahmadov, F.; Garibov, A.; Madatov, R.; Naghiyev, J.; Sadigov, A; Suleymanov, S.; Sadygov, Z.; Ahmadov, G.; Sadygov, Z.; Zhezher, V.; Mukhtarov, R.; Guliyev, E.; Zerrouk, F.

    2014-01-01

    Full text: In this work it was reported the results of gamma-ray, alpha particle and neutron detecting measurements performed using LFS scintillation crystal by micro-pixels avalanche photodiodes. The gamma ray detection performance investigated in the range of energy 59.6 keV - 1.3 MeV at room temperature. For this measurements Am-241 and Cd-109 sources placed together in front of the detector. Obtained results showed these detectors could be used in many fields e.g. geology of monitoring and exploration of oil and gas fields, medicine, border security and monitoring of contamination areas

  16. Double Screening Tests of the CMS ECAL Avalanche Photodiodes

    CERN Document Server

    Deiters, Konrad; Renker, Dieter; Sakhelashvili, Tariel; Britvitch, Ilia; Kuznetsov, Andrey; Musienko, Yuri; Singovsky, Alexander

    2005-01-01

    Specially developed avalanche photo-diodes (APDs) will be used to measure the light from the 61,200 lead tungstate crystals in the barrel part of the CMS electromagnetic calorimeter. To ensure the reliability over the lifetime of the detector, every APD is screened by irradiation and burn-in before it is accepted for CMS. As part of the establishment of the screening procedure and to determine its effectiveness, a large number of APDs were screened twice. The results of these tests suggest that the required reliability will be achieved.

  17. Double screening tests of the CMS ECAL avalanche photodiodes

    International Nuclear Information System (INIS)

    Deiters, K.; Ingram, Q.; Renker, D.; Sakhelashvili, T.; Britvitch, I.; Kuznetsov, A.; Musienko, Y.; Singovsky, A.

    2005-01-01

    Specially developed avalanche photodiodes (APDs) will be used to measure the light from the 61,200 lead tungstate crystals in the barrel part of the CMS electromagnetic calorimeter. To ensure the reliability over the lifetime of the detector, every APD is screened by irradiation and burn-in before it is accepted for CMS. As part of the establishment of the screening procedure and to determine its effectiveness, a large number of APDs were screened twice. The results of these tests suggest that the required reliability will be achieved

  18. Prolyl isomerase Pin1 negatively regulates AMP-activated protein kinase (AMPK) by associating with the CBS domain in the γ subunit.

    Science.gov (United States)

    Nakatsu, Yusuke; Iwashita, Misaki; Sakoda, Hideyuki; Ono, Hiraku; Nagata, Kengo; Matsunaga, Yasuka; Fukushima, Toshiaki; Fujishiro, Midori; Kushiyama, Akifumi; Kamata, Hideaki; Takahashi, Shin-Ichiro; Katagiri, Hideki; Honda, Hiroaki; Kiyonari, Hiroshi; Uchida, Takafumi; Asano, Tomoichiro

    2015-10-02

    AMP-activated protein kinase (AMPK) plays a critical role in metabolic regulation. In this study, first, it was revealed that Pin1 associates with any isoform of γ, but not with either the α or the β subunit, of AMPK. The association between Pin1 and the AMPK γ1 subunit is mediated by the WW domain of Pin1 and the Thr(211)-Pro-containing motif located in the CBS domain of the γ1 subunit. Importantly, overexpression of Pin1 suppressed AMPK phosphorylation in response to either 2-deoxyglucose or biguanide stimulation, whereas Pin1 knockdown by siRNAs or treatment with Pin1 inhibitors enhanced it. The experiments using recombinant Pin1, AMPK, LKB1, and PP2C proteins revealed that the protective effect of AMP against PP2C-induced AMPKα subunit dephosphorylation was markedly suppressed by the addition of Pin1. In good agreement with the in vitro data, the level of AMPK phosphorylation as well as the expressions of mitochondria-related genes, such as PGC-1α, which are known to be positively regulated by AMPK, were markedly higher with reduced triglyceride accumulation in the muscles of Pin1 KO mice as compared with controls. These findings suggest that Pin1 plays an important role in the pathogenic mechanisms underlying impaired glucose and lipid metabolism, functioning as a negative regulator of AMPK. © 2015 by The American Society for Biochemistry and Molecular Biology, Inc.

  19. Pin fin compliant heat sink with enhanced flexibility

    Energy Technology Data Exchange (ETDEWEB)

    Schultz, Mark D.

    2018-04-10

    Heat sinks and methods of using the same include a top and bottom plate, at least one of which has a plurality of pin contacts flexibly connected to one another, where the plurality of pin contacts have vertical and lateral flexibility with respect to one another; and pin slice layers, each having multiple pin slices, arranged vertically between the top and bottom plates such that the plurality of pin slices form substantially vertical pins connecting the top and bottom plates.

  20. Effects of Auxins on PIN-FORMED2 (PIN2) Dynamics Are Not Mediated by Inhibiting PIN2 Endocytosis1

    Science.gov (United States)

    Jásik, Ján; Bokor, Boris; Stuchlík, Stanislav; Mičieta, Karol; Turňa, Ján; Schmelzer, Elmon

    2016-01-01

    By using the photoconvertible fluorescence protein Dendra2 as a tag we demonstrated that neither the naturally occurring auxins indole-3-acetic acid and indole-3-butyric acid, nor the synthetic auxin analogs 1-naphthaleneacetic acid and 2,4-dichlorophenoxyacetic acid nor compounds inhibiting polar auxin transport such as 2,3,5-triiodobenzoic acid and 1-N-naphthylphthalamic acid, were able to inhibit endocytosis of the putative auxin transporter PIN-FORMED2 (PIN2) in Arabidopsis (Arabidopsis thaliana) root epidermis cells. All compounds, except Indole-3-butyric acid, repressed the recovery of the PIN2-Dendra2 plasma membrane pool after photoconversion when they were used in high concentrations. The synthetic auxin analogs 1-naphthaleneacetic acid and 2,4-dichlorophenoxyacetic acid showed the strongest inhibition. Auxins and auxin transport inhibitors suppressed also the accumulation of both newly synthesized and endocytotic PIN2 pools in Brefeldin A compartments (BFACs). Furthermore, we demonstrated that all compounds are also interfering with BFAC formation. The synthetic auxin analogs caused the highest reduction in the number and size of BFACs. We concluded that auxins and inhibitors of auxin transport do affect PIN2 turnover in the cells, but it is through the synthetic rather than the endocytotic pathway. The study also confirmed inappropriateness of the BFA-based approach to study PIN2 endocytosis because the majority of PIN2 accumulating in BFACs is newly synthesized and not derived from the plasma membrane. PMID:27506239

  1. Effects of Auxins on PIN-FORMED2 (PIN2) Dynamics Are Not Mediated by Inhibiting PIN2 Endocytosis.

    Science.gov (United States)

    Jásik, Ján; Bokor, Boris; Stuchlík, Stanislav; Mičieta, Karol; Turňa, Ján; Schmelzer, Elmon

    2016-10-01

    By using the photoconvertible fluorescence protein Dendra2 as a tag we demonstrated that neither the naturally occurring auxins indole-3-acetic acid and indole-3-butyric acid, nor the synthetic auxin analogs 1-naphthaleneacetic acid and 2,4-dichlorophenoxyacetic acid nor compounds inhibiting polar auxin transport such as 2,3,5-triiodobenzoic acid and 1-N-naphthylphthalamic acid, were able to inhibit endocytosis of the putative auxin transporter PIN-FORMED2 (PIN2) in Arabidopsis (Arabidopsis thaliana) root epidermis cells. All compounds, except Indole-3-butyric acid, repressed the recovery of the PIN2-Dendra2 plasma membrane pool after photoconversion when they were used in high concentrations. The synthetic auxin analogs 1-naphthaleneacetic acid and 2,4-dichlorophenoxyacetic acid showed the strongest inhibition. Auxins and auxin transport inhibitors suppressed also the accumulation of both newly synthesized and endocytotic PIN2 pools in Brefeldin A compartments (BFACs). Furthermore, we demonstrated that all compounds are also interfering with BFAC formation. The synthetic auxin analogs caused the highest reduction in the number and size of BFACs. We concluded that auxins and inhibitors of auxin transport do affect PIN2 turnover in the cells, but it is through the synthetic rather than the endocytotic pathway. The study also confirmed inappropriateness of the BFA-based approach to study PIN2 endocytosis because the majority of PIN2 accumulating in BFACs is newly synthesized and not derived from the plasma membrane. © 2016 American Society of Plant Biologists. All Rights Reserved.

  2. Detection efficiency vs. cathode and anode separation in cylindrical vacuum photodiodes used for measuring x-rays from plasma focus device

    Science.gov (United States)

    Borthakur, T. K.; Talukdar, N.; Neog, N. K.; Rao, C. V. S.; Shyam, A.

    2011-10-01

    A qualitative study on the performance of cylindrical vacuum photodiodes (VPDs) for x-ray detection in plasma focus device has been carried out. Various parameters of VPD such as electrode's diameter, electrode's separation, and its sensitivity are experimentally tested in plasma focus environment. For the first time it is found experimentally that the electrode-separation in the lateral direction of the two coaxial electrodes of cylindrical VPD also plays an important role to increase the efficiency of the detector. The efficiency is found to be highest for the detector with smaller cathode-anode lateral gap (1.5 mm) with smaller photo cathode diameter (10 mm). A comparison between our VPD with PIN (BPX-65) diode as an x-ray detector has also been made.

  3. Stresses in pin-loaded tubes

    Science.gov (United States)

    Ahmad, Ishtiaq

    This thesis deals with a parametric 3-dimensional photoelastic study of the stresses in pin-loaded tubes, commonly used in securing an aircraft engine into the air frame. Among the geometric variables studied (normalised with reference to the outer tube diameter) are included form values of the ratio of pin-hole diameter to outer tube diameter (0.10, 0.20, 0.40 and 0.60), four different hole-centre positions relative to the tube end and six values of the ratio of tube thickness to outer tube diameter (0.04, 0.08, 0.16, 0.25, 0.32 and 0.50). The other variables investigated are clearance between pin and hole, pin stiffness and lubrication. Some combinations of pairs of pins, either parallel or "crossed" have also been studied, and the effects of different modes of tensile loading, compressive loading, bending loading and torsional loading have been assessed. The results include details of the distribution of normalised changes in tube diameter along the planes of symmetry, the distribution of stress indices around the tube ends, the distribution of stress indices along planes of symmetry and the distribution of stress indices around the pin-loaded holes. The work is discussed in detail. The results provide a valuable reference in the design of pin-loaded tubes.

  4. Vortex lattice melting, pinning and kinetics

    International Nuclear Information System (INIS)

    Doniach, S.; Ryu, S.; Kapitulnik, A.

    1994-01-01

    The phenomenology of the high T c superconductors is discussed both at the level of the thermodynamics of melting of the Abrikosov flux lattice and in terms of the melting and kinetics of the flux lattice for a pinned system. The authors review results on 3D melting obtained by a Monte Carlo simulation approach in which the 2D open-quotes pancakeclose quotes vortices are treated as statistical variables. The authors discuss pinning in the context of the strong pinning regime in which the vortex density given in terms of the applied field B is small compared to that represented by an effective field B pin measuring the pinning center density. The authors introduce a new criterion for the unfreezing of a vortex glass on increase of magnetic field or temperature, in the strong pinning, small field unit. The authors model this limit in terms of a single flux line interacting with a columnar pin. This model is studied both analytically and by computer simulation. By applying a tilt potential, the authors study the kinetics of the vortex motion in an external current and show that the resulting current-voltage characteristic follows a basic vortex glass-like scaling relation in the vicinity of the depinning transition

  5. Cesium chemistry in GCFR fuel pins

    International Nuclear Information System (INIS)

    Fee, D.C.; Johnson, C.E.

    1979-01-01

    The fuel rod design for the Gas Cooled Fast-Breeder Reactor (GCFR) is similar to that employed for the Liquid Metal Fast Breeder Reactor (LMFBR) with the exception of the unique features inherent to the use of helium as the coolant. These unique design features include the use of (1) vented and pressure-equalized fuel rods, and (2) ribbed cladding along 75% of the fuel section. The former design feature enables reduction in cladding thickness and prevention of possible creep collapse of the cladding due to the high coolant pressure (8.5 MPa). The latter design feature brings about improved heat transfer characteristics. Each GCFR fuel rod is vented to a manifold whereby gaseous fission products diffusing out of the fuel pin are retained on charcoal traps. As a result, the internal pressure of a GCFR fuel pin does not increase during irradiation. In addition, the venting system also maintains the pressure within the fuel pin slightly below (0.3 to 0.5 MPa) the coolant pressure outside the fuel pin. Consequently, should a breach occur in the cladding, helium flows into the breached fuel pin thereby minimizing fission product contamination of the coolant. These desirable aspects of a GCFR fuel pin can be maintained only as long as axial gas transport paths are available and operating within the fuel pin

  6. X-ray imaging sensor arrays on foil using solution processed organic photodiodes and organic transistors

    NARCIS (Netherlands)

    Kumar, A.; Moet, D.; Steen, J.L. van der; Tripathi, A.K.; Rodriguez, F.G.; Maas, J.; Simon, M.; Reutten, W.; Douglas, A.; Raaijmakers, R.; Malinowski, P.E.; Myny, K.; Shafique, U.; Andriessen, R.; Heremans, P.; Gelinck, G.H.

    2014-01-01

    We demonstrate organic imaging sensor arrays fabricated on flexible plastic foil with the solution processing route for both photodiodes and thin film transistors. We used the photovoltaic P3HT:PCBM blend for fabricating the photodiodes using spin coating and pentacene as semiconductor material for

  7. Integrated Photodiodes in Standard CMOS Technology for CD and DVD Applications

    NARCIS (Netherlands)

    Radovanovic, S.; Annema, Anne J.; Nauta, Bram

    The influence of two different geometries (layouts) and two structures of high-speed photodiodes in fully standard 0.18 μm CMOS technology on their intrinsic (physical) and electrical bandwidths is analyzed. In addition, a possible application of the integrated photodiodes for the CD and DVD optical

  8. High quantum efficiency annular backside silicon photodiodes for reflectance pulse oximetry in wearable wireless body sensors

    DEFF Research Database (Denmark)

    Duun, Sune Bro; Haahr, Rasmus Grønbek; Hansen, Ole

    2010-01-01

    The development of annular photodiodes for use in a reflectance pulse oximetry sensor is presented. Wearable and wireless body sensor systems for long-term monitoring require sensors that minimize power consumption. We have fabricated large area 2D ring-shaped silicon photodiodes optimized...

  9. Study on the formation of current characteristics of a silicon photodiode with rectifying barriers

    Directory of Open Access Journals (Sweden)

    Karimov A. V.

    2013-02-01

    Full Text Available The article presents the results of studies on silicon photodiode double-barrier structure with back-to-back rectifying junctions «metal — semiconductor» in the photodiode and photovoltaic modes. Such structures are of interest for the development of input devices for weak optical signals.

  10. A Novel Photodiode for Reflectance Pulse Oximetry in low-power applications

    DEFF Research Database (Denmark)

    Haahr, Rasmus Grønbek; Duun, Sune; Birkelund, Karen

    2007-01-01

    The amount of light collected is crucial for low-power applications of pulse oximetry. In this work a novel ring-shaped backside photodiode has been developed for a wearable reflectance pulse oximeter. The photodiode is proven to work with a dual LED with wavelengths of 660 nm and 940 nm. For the...

  11. Electro-optical fuel pin identification system

    International Nuclear Information System (INIS)

    Kirchner, T.L.

    1978-09-01

    A prototype Electro-Optical Fuel Pin Identification System referred to as the Fuel Pin Identification System (FPIS) has been developed by the Hanford Engineering Development Laboratory (HEDL) in support of the Fast Flux Test Facility (FFTF) presently under construction at HEDL. The system is designed to remotely read an alpha-numeric identification number that is roll stamped on the top of the fuel pin end cap. The prototype FPIS consists of four major subassemblies: optical read head, digital compression electronics, video display, and line printer

  12. Flux pinning characteristics of YBCO coated conductor

    International Nuclear Information System (INIS)

    Matsushita, T.; Watanabe, T.; Fukumoto, Y.; Yamauchi, K.; Kiuchi, M.; Otabe, E.S.; Kiss, T.; Watanabe, T.; Miyata, S.; Ibi, A.; Muroga, T.; Yamada, Y.; Shiohara, Y.

    2005-01-01

    Flux pinning properties of PLD-processed YBCO coated conductors deposited on IBAD substrate are investigated. The thickness of YBCO layer is changed in the range of 0.27-1.0 μm. The thickness dependence of critical current density, n-value and irreversibility field are measured in a wide range of magnetic field. The results are compared with the theoretical flux creep-flow model. It is found that these pinning properties are strongly influenced by the thickness as well as the pinning strength. Optimum condition for high field application of this superconductor is discussed

  13. Equalized radiography using special modulator pins

    Energy Technology Data Exchange (ETDEWEB)

    Aitkenhead, W.F.; Gershman, R.J.

    1991-11-19

    This patent describes a system for examining an object with penetrating radiation. It comprises a source/modulator which generates a fan of penetrating radiation scanning an object position and comprises wedge- shaped pins of a radiation attenuating material movable into the fan in the scanning direction and arranged in at least one row extending in a direction transverse to both the scanning direction and the propagation direction of the radiation; each of the pins having a ridge pointing to or away from the origin of the fan and each pin having sections of different areas in different planes normal to the scanning direction; and a control circuit moving the pins individually to respective degrees into the scanning fan.

  14. Pinning Synchronization of Switched Complex Dynamical Networks

    Directory of Open Access Journals (Sweden)

    Liming Du

    2015-01-01

    Full Text Available Network topology and node dynamics play a key role in forming synchronization of complex networks. Unfortunately there is no effective synchronization criterion for pinning synchronization of complex dynamical networks with switching topology. In this paper, pinning synchronization of complex dynamical networks with switching topology is studied. Two basic problems are considered: one is pinning synchronization of switched complex networks under arbitrary switching; the other is pinning synchronization of switched complex networks by design of switching when synchronization cannot achieved by using any individual connection topology alone. For the two problems, common Lyapunov function method and single Lyapunov function method are used respectively, some global synchronization criteria are proposed and the designed switching law is given. Finally, simulation results verify the validity of the results.

  15. Ultrasonic inspections of fuel alignment pins

    International Nuclear Information System (INIS)

    Rathgeb, W.; Schmid, R.

    1994-01-01

    As a remedy to the practical problem of defects in fuel alignment pins made of Inconel X750, an inspection technique has been developed which fully meets the requirements of detecting defects. The newly used fuel alignment pins made of austenite are easy to test and therefore satisfy the necessity of further inspections.For the fuel alignment pins of the upper core structure a safe and fast inspection technique was made available. The inspection sensitivity is high and it is possible to give quantitative directions concerning defect orientation and depth. After the required inspections had been concluded in 1989, a total of 18 inspections were carried out in various national and international nuclear power plants in the following years. During this time more than 6000 fuel alignment pines were examined.For the fuel alignment pins the inspection technique provided could increase the understanding of the defect process. This technique contributed to the development of an adaptive and economical repair strategy. ((orig.))

  16. InGaAs/GaAsSb Type-II superlattice based photodiodes for short wave infrared detection

    Science.gov (United States)

    Uliel, Y.; Cohen-Elias, D.; Sicron, N.; Grimberg, I.; Snapi, N.; Paltiel, Y.; Katz, M.

    2017-08-01

    Short Wave Infra-Red (SWIR) photodetectors operating above the response cutoff of InGaAs- based detectors (1.7-2.5 μm) are required for both defense and civil applications. Type II Super-Lattices (T2SL) were recently proposed For near- room temperature SWIR detection as a possible system enabling bandgap adjustment in the required range. The work presented here focuses on a T2SL with alternating nano-layers of InGaAs and GaAsSb lattice-matched to an InP substrate. A near room temperature SWIR cutoff of 2.4 μm was measured. Electrical junctions were realized using Zn diffusion p-doping process. We realized and studied both mesa- and selective diffusion- based p-i-n photodiodes. Dark currents of mesa-based devices were 1.5 mA/cm2 and 32 μA/cm2 at 300 and 230 K respectively. Dark currents were reduced to 1.2 mA/cm2 and 12 μA/cm2 respectively by utilizing the selective diffusion process. The effect of operating voltage is discussed. At 300 K the quantum efficiency was up to 40% at 2.18 μm in mesa devices. D∗ was 1.7 ×1010cm ·√{Hz } /W at 2 μm.

  17. Comparative analysis of radiation effects on the electroluminescence of Si and SiGe/Si(001) heterostructures with self-assembled Islands

    Energy Technology Data Exchange (ETDEWEB)

    Krasilnik, Z. F.; Kudryavtsev, K. E. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Kachemtsev, A. N. [Sedakov Scientific-Research Institute (Russian Federation); Lobanov, D. N., E-mail: dima@ipm.sci-nnov.ru; Novikov, A. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Obolenskiy, S. V. [Nizhni Novgorod State University (Russian Federation); Shengurov, D. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2011-02-15

    The effect of neutron radiation on the electroluminescence of the Si p-i-n diode containing a multilayered Ge/Si heterostructure with self-assembled nanoislands is studied. In comparison with bulk Si, the diodes containing Ge(Si) nanoislands exhibit a higher radiation hardness of the electroluminescence signal, which is attributed to spatial localization of charge carriers in the Ge/Si nanostructures. The spatial localization of charge carriers impedes their diffusion to radiation defects followed by nonradiative recombination at the defects. The results show the possibilities of using Ge/Si heterostructures with self-assembled nanoislands for the development of optoelectronic devices resistant to radiation.

  18. LOFT DTT rake pin stress analysis

    Energy Technology Data Exchange (ETDEWEB)

    Mosby, W.R.

    1979-01-23

    A stress analysis of the 3/8-inch and 1/4-inch pins which hold the rake assembly to the flange was performed and shows stresses to be lower than the Class 1 allowables of the ASME Boiler and Pressure Vessel Code. The alternating pin stresses were found to be below the endurance limit and fatigue failure will not occur. The rake assembly was assumed to be loaded by steady drag and lift forces and alternating vortex shedding forces.

  19. IMp: The customizable LEGO® Pinned Insect Manipulator

    Directory of Open Access Journals (Sweden)

    Steen Dupont

    2015-02-01

    Full Text Available We present a pinned insect manipulator (IMp constructed of LEGO® building bricks with two axes of movement and two axes of rotation. In addition we present three variants of the IMp to emphasise the modular design, which facilitates resizing to meet the full range of pinned insect specimens, is fully customizable, collapsible, affordable and does not require specialist tools or knowledge to assemble.

  20. Improved pinning by multiple in-line damage

    Energy Technology Data Exchange (ETDEWEB)

    Weinstein, Roy [Beam Particle Dynamics Laboratories, University of Houston, Houston, TX 77204-5005 (United States); Sawh, Ravi-Persad [Beam Particle Dynamics Laboratories, University of Houston, Houston, TX 77204-5005 (United States); Gandini, Alberto [Beam Particle Dynamics Laboratories, University of Houston, Houston, TX 77204-5005 (United States); Parks, Drew [Beam Particle Dynamics Laboratories, University of Houston, Houston, TX 77204-5005 (United States)

    2005-02-01

    Columnar pinning centres provide the largest pinning potential, U{sub pin}, but not the greatest J{sub c} or pinnable field, B{sub pin}. Characteristics of ion-generated columnar defects which limit J{sub c} and B{sub pin} are discussed, including reduction of the percolation path, and the need for a larger number of columns of damage, for pinning, than are usually estimated. It is concluded that columnar pinning centres limit B{sub pin} to less than 4 T, and also severely reduce J{sub c}. The goal of maximizing U{sub pin}, via columnar centres, appears to have obscured a more rewarding approach and resulted in neglect of a large regime of ion interactions. Evidence is reviewed that multiple in-line damage (MILD), described herein, can provide orders of magnitude higher J{sub c} and B{sub pin}, despite providing lower U{sub pin}. The MILD pinning centre morphology is discussed, and it is estimated that for present-day large grain high T{sub c} superconductors, a J{sub c} value of {approx}10{sup 6}Acm{sup -2} is obtainable at 77 K, even when crystal plane alignment and weak links are not improved. In addition, the pinned field is increased by over an order of magnitude. An experiment is proposed to confirm these calculations, directly compare MILD pinning to continuous columnar pinning, and determine the optimum MILD structure. Applications of MILD pinning are discussed.

  1. Glassy dynamics in randomly pinned particle systems

    Science.gov (United States)

    Phan, Anh; Schweizer, Kenneth

    We generalize the force-level, microscopic Elastically Collective Nonlinear Langevin Equation theory of activated relaxation in bulk hard sphere and thermal liquids to address the role of internal quenched disorder. So-called neutral confinement is considered where a subset of particles are randomly pinned and there is no change of equilibrium pair structure. As the pinned fraction grows, the cage scale dynamical constraints are intensified, resulting in the mobile particles becoming more localized, a larger glassy shear modulus, and an enhanced cage scale barrier. However, based on an approximate analysis of how quenched disorder modifies collective elastic field fluctuations, random pinning is predicted to effectively screen or localize the strain field associated with the longer range elastic component of the activation barrier, leading to an overall reduction of it with pinning fraction. The different response of the cage and elastic barriers to quenched disorder results in subtle predictions for how the alpha relaxation time varies with pinning fraction and system volume fraction. A semi-quantitative comparison with recent simulations of a pinned-mobile water model are consistent with the theory. Predictions are made for thermal molecular liquids.

  2. Development of an X-ray detector using photodiodes

    International Nuclear Information System (INIS)

    Gonzalez G, J.; Azorin V, J. C.; Sosa A, M. A.; Ceron, P.

    2016-10-01

    Currently the radiation detectors for medical applications are very high value in the market and are difficult to access as training material. In the Sciences and Engineering Division of the Guanajuato University (Mexico) investigations are carried out related to ionizing radiations, especially with X-rays. To overcome the lack of materials has had to resort to borrowing equipment from other institutions, so its use and availability are intermittent. For these reasons is proposed to design and implement an X-ray detector for the use of the work group and the University. This work aims to build an X-ray semiconductor detector using inexpensive and affordable materials, is also proposed the use of a photodiode sensor and an Arduino analog-digital card and a LCD display showing the data. (Author)

  3. Studies of avalanche photodiodes for scintillating fibre tracking readout

    International Nuclear Information System (INIS)

    Fenker, H.; Thomas, J.

    1993-01-01

    Avalanche Photodiodes (APDs) operating in ''Geiger Mode'' have been studied in a fibre tracking readout environment. A fast recharge circuit has been developed for high rate data taking, and results obtained from a model fibre tracker in the test beam at Brookhaven National Laboratory are presented. A high rate calibrated light source has been developed using a commercially available laser diode and has been used to measure the efficiency of the devices. The transmission of the light from a 1mm fibre onto a 0.5mm diameter APD surface has been identified as the main problem in the use of these particular devices for scintillating fibre tracking in the Superconducting Supercollider environment. Solutions to this problem are proposed

  4. Low dark leakage current in organic planar heterojunction photodiodes

    Science.gov (United States)

    Shekhar, Himanshu; Solomeshch, Olga; Liraz, Dan; Tessler, Nir

    2017-11-01

    It is often suggested that the dark leakage current of organic photodiodes is due to extrinsic leakage paths that do not involve the electronic junction. By studying a series of devices, where the acceptor is kept constant (C70) and the donor material is varied, we find a direct correlation between the strength of the sub-gap signature of the charge-transfer states and the leakage current. Attributing the differences in the sub-gap absorption to the donor's sub-gap states suggests that the donor's side of the junction should be made longer, to push the Fermi level at V = 0 towards the acceptor's LUMO, and thus, an optimized value of 800 Pacm-2 at V = -1 V is reported.

  5. Temperature Control of Avalanche Photodiode Using Thermoelectric Cooler

    Science.gov (United States)

    Refaat, Tamer F.; Luck, William S., Jr.; DeYoung, Russell J.

    1999-01-01

    Avalanche photodiodes (APDS) are quantum optical detectors that are used for visible and near infrared optical detection applications. Although APDs are compact, rugged, and have an internal gain mechanism that is suitable for low light intensity; their responsivity, and therefore their output, is strongly dependent on the device temperature. Thermoelectric coolers (TEC) offers a suitable solution to this problem. A TEC is a solid state cooling device, which can be controlled by changing its current. TECs are compact and rugged, and they can precisely control the temperature to within 0.1 C with more than a 150 C temperature gradient between its surfaces. In this Memorandum, a proportional integral (PI) temperature controller for APDs using a TEC is discussed. The controller is compact and can successfully cool the APD to almost 0 C in an ambient temperature environment of up to 27 C.

  6. Correcting for accidental correlations in saturated avalanche photodiodes.

    Science.gov (United States)

    Grieve, J A; Chandrasekara, R; Tang, Z; Cheng, C; Ling, A

    2016-02-22

    In this paper we present a general method for estimating rates of accidental coincidence between a pair of single photon detectors operated within their saturation regimes. By folding the effects of recovery time of both detectors and the detection circuit into an "effective duty cycle" we are able to accomodate complex recovery behaviour at high event rates. As an example, we provide a detailed high-level model for the behaviour of passively quenched avalanche photodiodes, and demonstrate effective background subtraction at rates commonly associated with detector saturation. We show that by post-processing using the updated model, we observe an improvement in polarization correlation visibility from 88.7% to 96.9% in our experimental dataset. This technique will be useful in improving the signal-to-noise ratio in applications which depend on coincidence measurements, especially in situations where rapid changes in flux may cause detector saturation.

  7. Design Issues of GaAs and AlGaAs Delta-Doped p-i-n Quantum-Well APD's

    Science.gov (United States)

    Wang, Yang

    1994-01-01

    We examine the basic design issues in the optimization of GaAs delta-doped and AlGAs delta-doped quantum-well avalanche photodiode (APD) structures using a theoretical analysis based on an ensemble Monte Carlo simulation. The devices are variations of the p-i-n doped quantum-well structure previously described in the literature. They have the same low-noise, high-gain and high-bandwidth features as the p-i-n doped quantum-well device. However, the use of delta doping provides far greater control or the doping concentrations within each stage possibly enhancing the extent to which the device can be depleted. As a result, it is expected that the proposed devices will operate at higher gain levels (at very low noise) than devices previously developed.

  8. A pin by pin microscopic depletion scheme using an homogeneous core calculation with pin-power reconstruction

    International Nuclear Information System (INIS)

    Hoareau, F.; Fliscounakis, M.; Couyras, D.; Guillo, M.; Pora, Y.

    2009-01-01

    EDF/R and D is currently developing a new calculation scheme based on the transport-Simplified P n (SP n ) approach. The lattice code used is the CEA deterministic code APOLLO2, while the core code COCAGNE is currently under development at EDF R and D. This paper presents a new calculation scheme aimed at computing the pin by pin isotopic concentrations of fuel assemblies. This new scheme is based on homogeneous calculations and the use of the pin-power reconstruction method already implemented in COCAGNE. Indeed, this dehomogenization technique can supply the core code with an approximate pin by pin flux. The former is a necessary input for the microscopic depletion solver of COCAGNE. In order to validate this new microscopic depletion scheme, two kind of tests were performed. Firstly, direct comparisons with APOLLO2 results were made on the depletion calculation of a fuel assembly. It is shown that isotopic concentrations and the multiplication factor (keff) obtained by COCAGNE are consistent with APOLLO2 results. Secondly, the new scheme was compared with the existing calculation procedure of COCAGNE, that is heterogeneous calculations coupled with the microscopic depletion solver. The second test indicates that the new procedure gives also fairly accurate results. (author)

  9. Developments in thermoelectrically cooled PIN and CZT detectors

    International Nuclear Information System (INIS)

    Redus, R.H.; Pantazis, J.A.; Huber, A.C.

    1998-01-01

    A compact, high-energy-resolution X-ray and gamma-ray spectroscopy system has been developed using thermoelectrically cooled detectors to combine excellent energy resolution and convenient operation. A Si PIN diode is used for low-energy X rays, while a Cd 1-x Zn x Te (CZT) detector is used for higher-energy photons. Cooling is totally transparent to the user, so the system operates as a room temperature system, although the detector itself is cooled for improved performance. The heart of the XR-100 is a hybrid package containing the thermoelectrically cooled detector and feedback components. The detectors are used with a charge-sensitive preamplifier and a seven-pole quasi-triangular shaper with active baseline restoration, pileup rejection, and rise-time discrimination

  10. Developments in Thermoelectrically Cooled Pin and CZT Detectors

    International Nuclear Information System (INIS)

    R. H. Redus; J. A. Pantazis; A. C. Huber

    1998-01-01

    A compact high-energy-resolution X-ray and gamma-ray spectroscopy system has been developed using thermoelectrically cooled detectors to combine excellent energy resolution and convenient operation. A Si PIN diode is used for low-energy X rays, while a Cd 1-x Zn x Te (CZT) detector is used for higher-energy photons. Cooling is totally transparent to the user, so the system operates as a room temperature system, although the detector itself is cooled for improved performance. The heart of the XR-100 is a hybrid package containing the thermoelectrically cooled detector and feedback components. The seven-pole quasi-triangular shaper with active baseline restoration, pileup rejection, and rise-time discrimination

  11. Determining Parameters of Photodiodes which are Characteristics from Ionisation Chambers Following IEC 731-1982 Standards

    International Nuclear Information System (INIS)

    Barbosa, R.A.; Lopes, R.T.; Tauhata, L.; Poledna, R.

    1999-01-01

    A dosemeter is presented with a photodiode base, characterised as a field class instrument. The performance of three photodiode models, a commercially available (Siemens) and two others (Hamamatsu), were compared with the performance of the ionisation chamber, using the limits established in the IEC 731 Standard as requirement. The long-term stability and the energy dependence tests have shown results outside the limits but, in special situations such as X ray beam monitoring, these deficiencies have no influence on the dosemeter performance. The rotation test results have shown the possibility of using a photodiode to determine the field uniformity. (author)

  12. The photodiode of UV-range on the basis of ZnSe

    Directory of Open Access Journals (Sweden)

    Perevertailo V. L.

    2010-03-01

    Full Text Available The construction and technology of Shottky photodiode on the basis of ZnSe, sensible in the ultraviolet region of spectrum are considered. Researches of electrophysical and photo-electric descriptions of photodiodes of Shottky Nі–ZnSe(Te,O–Іn are conducted and it is shown, that they can be applied in devices for radiometry and dissymmetry UV radiations in the ranges UVA, UVB and UVC. Comparison of parameters of developed UV photodiodes based on ZnSe with analogues showed that small capacitance and low value of dark current is their substantial difference of other ones.

  13. Whole-Pin Furnace system: An experimental facility for studying irradiated fuel pin behavior under potential reactor accident conditions

    International Nuclear Information System (INIS)

    Liu, Y.Y.; Tsai, H.C.; Donahue, D.A.; Pushis, D.O.; Savoie, F.E.; Holland, J.W.; Wright, A.E.; August, C.; Bailey, J.L.; Patterson, D.R.

    1990-05-01

    The whole-pin furnace system is a new in-cell experimental facility constructed to investigate how irradiated fuel pins may fail under potential reactor accident conditions. Extensive checkouts have demonstrated excellent performance in remote operation, temperature control, pin breach detection, and fission gas handling. The system is currently being used in testing of EBIR-II-irradiated Integral Fast Reactor (IFR) metal fuel pins; future testing will include EBR-II-irradiated mixed-oxide fuel pins. 7 refs., 4 figs

  14. Testing of the KRI-developed Silicon PIN Radioxenon Detector

    Energy Technology Data Exchange (ETDEWEB)

    Foxe, Michael P. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); McIntyre, Justin I. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

    2015-01-23

    Radioxenon detectors are used for the verification of the Comprehensive Nuclear-Test-Ban Treaty (CTBT) in a network of detectors throughout the world called the International Monitoring System (IMS). The Comprehensive Nuclear-Test-Ban Treaty Organization (CTBTO) Provisional Technical Secretariat (PTS) has tasked Pacific Northwest National Laboratory (PNNL) with testing a V.G. Khlopin Radium Institute (KRI) and Lares Ltd-developed Silicon PIN detector for radioxenon detection. PNNL measured radioxenon with the silicon PIN detector and determined its potential compared to current plastic scintillator beta cells. While the PNNL tested Si detector experienced noise issues, a second detector was tested in Russia at Lares Ltd, which did not exhibit the noise issues. Without the noise issues, the Si detector produces much better energy resolution and isomer peak separation than a conventional plastic scintillator cell used in the SAUNA systems in the IMS. Under the assumption of 1 cm3 of Xe in laboratory-like conditions, 24-hr count time (12-hr count time for the SAUNA), with the respective shielding the minimum detectable concentrations for the Si detector tested by Lares Ltd (and a conventional SAUNA system) were calculated to be: 131mXe – 0.12 mBq/m3 (0.12 mBq/m3); 133Xe – 0.18 mBq/m3 (0.21 mBq/m3); 133mXe – 0.07 mBq/m3 (0.15 mBq/m3); 135Xe – 0.45 mBq/m3 (0.67 mBq/m3). Detection limits, which are one of the important factors in choosing the best detection technique for radioxenon in field conditions, are significantly better than for SAUNA-like detection systems for 131mXe and 133mXe, but similar for 133Xe and 135Xe. Another important factor is the amount of “memory effect” or carry over signal from one radioxenon measurement to the subsequent sample. The memory effect is

  15. Friction and wear studies on nylon-6/SiO2 nanocomposites

    NARCIS (Netherlands)

    de la Luz Garcia-Curiel, M.M.; de Rooij, Matthias B.; Winnubst, Aloysius J.A.; van Zyl, W.E.; Verweij, H.

    2004-01-01

    Composites of nanometer-sized silica (SiO2) filler incorporated in nylon-6 polymer were prepared by compression molding. Their friction and wear properties were investigated on a pin on disk tribometer by running a flat pin of steel against a composite disc. The morphologies of the composites as

  16. Prolyl isomerase Pin1 is highly expressed in Her2-positive breast cancer and regulates erbB2 protein stability

    Directory of Open Access Journals (Sweden)

    Lu Kun

    2008-12-01

    Full Text Available Abstract Overexpression of HER-2/Neu occurs in about 25–30% of breast cancer patients and is indicative of poor prognosis. While Her2/Neu overexpression is primarily a result of erbB2 amplification, it has recently been recognized that erbB2 levels are also regulated on the protein level. However, factors that regulate Her2/Neu protein stability are less well understood. The prolyl isomerase Pin1 catalyzes the isomerization of specific pSer/Thr-Pro motifs that have been phosphorylated in response to mitogenic signaling. We have previously reported that Pin1-catalyzed post-phosphorylational modification of signal transduction modulates the oncogenic pathways downstream from c-neu. The goal of this study was to examine the expression of prolyl isomerase Pin1 in human Her2+ breast cancer, and to study if Pin1 affects the expression of Her2/Neu itself. Methods Immunohistochemistry for Her2 and Pin1 were performed on two hundred twenty-three human breast cancers, with 59% of the specimen from primary cancers and 41% from metastatic sites. Pin1 inhibition was achieved using siRNA in Her2+ breast cancer cell lines, and its effects were studied using cell viability assays, immunoblotting and immunofluorescence. Results Sixty-four samples (28.7% stained positive for Her2 (IHC 3+, and 54% (122/223 of all breast cancers stained positive for Pin1. Of the Her2-positive cancers 40 (62.5% were also Pin1-positive, based on strong nuclear or nuclear and cytoplasmic staining. Inhibition of Pin1 via RNAi resulted in significant suppression of Her2-positive tumor cell growth in BT474, SKBR3 and AU565 cells. Pin1 inhibition greatly increased the sensitivity of Her2-positive breast cancer cells to the mTOR inhibitor Rapamycin, while it did not increase their sensitivity to Trastuzumab, suggesting that Pin1 might act on Her2 signaling. We found that Pin1 interacted with the protein complex that contains ubiquitinated erbB2 and that Pin1 inhibition accelerated erbB2

  17. Single Photon Sensitive HgCdTe Avalanche Photodiode Detector (APD) Project

    Data.gov (United States)

    National Aeronautics and Space Administration — A linear mode HgCdT electron-initiated avalanche photodiode (EAPD) capable of 1570nm photon detection efficiency (PDE) at >10 MHz will be developed. The Phase I...

  18. Readout of scintillator light with avalanche photodiodes for positron emission tomography

    International Nuclear Information System (INIS)

    Chen, Ruru; Fremout, A.; Tavernier, S.; Bruyndonckx, P.; Clement, D.; Loude, J.-F.; Morel, C.

    1999-01-01

    The noise properties and other relevant characteristics of avalanche photodiodes have been investigated with the perspective of replacing photomultiplier tubes in positron emission tomography. It is clearly demonstrated that they are a valid alternative to photomultiplier tubes in this application

  19. Tunneling Current Probe for Noncontract Wafer-Level Photodiode Array Testing

    National Research Council Canada - National Science Library

    Verdun, Horacio

    1999-01-01

    The Tunneling Current Probe (TCP) is an automated picometer-sensitive proximity sensor and current measurement system which measures the current through a photodiode detector array element by establishing a tunneling current...

  20. CsI(Tl)-photodiode detectors for gamma-ray spectroscopy

    CERN Document Server

    Fioretto, E; Viesti, G; Cinausero, M; Zuin, L; Fabris, D; Lunardon, M; Nebbia, G; Prete, G

    2000-01-01

    We report on the performances of CsI(Tl)-photodiode detectors for gamma-ray spectroscopy applications. Light output yield and energy resolution have been measured for different crystals and read-out configurations.

  1. Development of a fast pin-by-pin transport solver in ARCADIA registered

    International Nuclear Information System (INIS)

    Geemert, R. van

    2009-01-01

    For satisfaction of future global customer needs, dedicated efforts are being coordinated internationally and pursued continuously at AREVA NP. The currently ongoing CONVERGENCE project is committed to the development of the ARCADIA registered next generation core simulation software package. ARCADIA registered will be put to global use by all AREVA NP business regions, for the entire spectrum of core design processes, licensing computations and safety studies. As part of the currently ongoing trend towards more sophisticated neutronics methodologies, an SP 3 nodal transport concept (van Geemert 2008) has been developed for ARTEMIS (Hobson 2008) which is the steady-state and transient core simulation part of ARCADIA registered . For enabling a high computational performance, the SP 3 calculations are accelerated by applying multi-level coarse mesh rebalancing (van Geemert 2006). In the current implementation, SP 3 is typically about 1.4 times as expensive computationally as SP 1 (diffusion). The developed SP 3 solution concept is foreseen as the future computational workhorse for many-group 3D pin-by-pin full core computations by ARCADIA registered . With the entire numerical workload being highly parallelizable through domain decomposition techniques, associated CPU-time requirements that adhere to the efficiency needs in the nuclear industry can be expected to become feasible in the near future. The accuracy enhancement obtainable by using SP 3 instead of SP 1 has been verified by a detailed comparison of ARTEMIS 16-group pin-by-pin SP N results with KAERI's DeCart reference results (Kozlowski 2003) for the 2D pin-by-pin Purdue UO 2 /MOX benchmark. Within the associated pin-by-pin grid, large pin-to-pin variations in cross-section values occur due to the explicit modelling of guide tubes, gadolinium pins as well as the heterogeneous distribution of MOX assemblies and UO 2 assemblies featuring significantly different burnups. With a pin-by-pin grid as

  2. PINS Testing and Modification for Explosive Identification

    Energy Technology Data Exchange (ETDEWEB)

    E.H. Seabury; A.J. Caffrey

    2011-09-01

    The INL's Portable Isotopic Neutron Spectroscopy System (PINS)1 non-intrusively identifies the chemical fill of munitions and sealed containers. PINS is used routinely by the U.S. Army, the Defense Threat Reduction Agency, and foreign military units to determine the contents of munitions and other containers suspected to contain explosives, smoke-generating chemicals, and chemical warfare agents such as mustard and nerve gas. The objects assayed with PINS range from softball-sized M139 chemical bomblets to 200 gallon DOT 500X ton containers. INL had previously examined2 the feasibility of using a similar system for the identification of explosives, and based on this proof-of-principle test, the development of a dedicated system for the identification of explosives in an improvised nuclear device appears entirely feasible. INL has been tasked by NNSA NA-42 Render Safe Research and Development with the development of such a system.

  3. Impact ionisation measurement and modelling of long wavelength avalanche photodiodes

    CERN Document Server

    Ng, J S

    2003-01-01

    Impact ionisation coefficients are measured in In sub 0 sub . sub 5 sub 3 Ga sub 0 sub . sub 4 sub 7 As and excess noise characteristics are measured in sub-micron ln sub 0 sub . sub 5 sub 2 Al sub 0 sub . sub 4 sub 8 As. Photomultiplication measurements performed on a series of In sub 0 sub . sub 5 sub 3 Ga sub 0 sub . sub 4 sub 7 As p-i-n diodes are reported. Taking careful account of factors which could give rise to erroneous results at low fields, ln sub 0 sub . sub 5 sub 3 Ga sub 0 sub . sub 4 sub 7 As ionisation coefficients are deduced at room temperature as a function of electric field. The results confirm the low field ionisation behaviour of alpha and the conventional field dependence of beta. Excess avalanche noise factors of In sub 0 sub . sub 5 sub 2 Al sub 0 sub . sub 4 sub 8 As p-i-n diodes, with i-region thicknesses ranging from 1.0 mu m to 0.1 mu m, are reported. The results indicate effective beta/alpha values lying between 0.15 and 0.23, comparable with or lower than the values reported in ...

  4. CMOS-Compatible PureGaB Ge-on-Si APD pixel arrays

    NARCIS (Netherlands)

    Sammak, A.; Aminian, Mahdi; Nanver, L.K.; Charbon, E.E.E.

    2016-01-01

    Pure gallium and pure boron (PureGaB) Ge-on-Si photodiodes were fabricated in a CMOS compatible process and operated in linear and avalanche mode. Three different pixel geometries with very different area-to-perimeter ratios were investigated in linear arrays of 300 pixels with each a size of 26 ×

  5. Laser annealing heals radiation damage in avalanche photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Jin Gyu [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Electrical and Computer Engineering, Waterloo, ON (Canada); Anisimova, Elena; Higgins, Brendon L.; Bourgoin, Jean-Philippe [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Physics and Astronomy, Waterloo, ON (Canada); Jennewein, Thomas [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Physics and Astronomy, Waterloo, ON (Canada); Canadian Institute for Advanced Research, Quantum Information Science Program, Toronto, ON (Canada); Makarov, Vadim [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Electrical and Computer Engineering, Waterloo, ON (Canada); University of Waterloo, Department of Physics and Astronomy, Waterloo, ON (Canada)

    2017-12-15

    Avalanche photodiodes (APDs) are a practical option for space-based quantum communications requiring single-photon detection. However, radiation damage to APDs significantly increases their dark count rates and thus reduces their useful lifetimes in orbit. We show that high-power laser annealing of irradiated APDs of three different models (Excelitas C30902SH, Excelitas SLiK, and Laser Components SAP500S2) heals the radiation damage and several APDs are restored to typical pre-radiation dark count rates. Of nine samples we test, six APDs were thermally annealed in a previous experiment as another solution to mitigate the radiation damage. Laser annealing reduces the dark count rates further in all samples with the maximum dark count rate reduction factor varying between 5.3 and 758 when operating at -80 C. This indicates that laser annealing is a more effective method than thermal annealing. The illumination power to reach these reduction factors ranges from 0.8 to 1.6 W. Other photon detection characteristics, such as photon detection efficiency, timing jitter, and afterpulsing probability, fluctuate but the overall performance of quantum communications should be largely unaffected by these variations. These results herald a promising method to extend the lifetime of a quantum satellite equipped with APDs. (orig.)

  6. Nanostructured organic-inorganic photodiodes with high rectification ratio.

    Science.gov (United States)

    Karan, Santanu; Mallik, Biswanath

    2008-12-10

    High quality organic-inorganic heterojunction photodiodes based on nanostructured copper (II) phthalocyanine (CuPc) and intrinsic zinc oxide (i-ZnO) have been fabricated. The i-ZnO thin films/layers were grown by RF magnetron sputtering on clean indium tin oxide (ITO) coated glass substrates. These films have been characterized by optical absorption and field emission scanning electron microscopy (FESEM). CuPc thin films deposited at room temperature on i-ZnO have exhibited a change in their surface morphology with the post-deposition annealing temperature under normal atmosphere. The electrical dark conductivity and the photoconductivity of ITO/i-ZnO/CuPc/Au sandwich structures have been measured under various photoexcitation intensities using a xenon light source. The devices have shown excellent reproducibility of their electrical characteristics and high rectification ratios. The highest rectification ratio is nearly 831 calculated above the threshold voltage at room temperature for the sample annealed at 250 °C (i.e. Pc 250). The effects of the annealing temperature of CuPc on the surface morphology, rectification ratio, and optical properties have been discussed.

  7. Nanostructured organic inorganic photodiodes with high rectification ratio

    Science.gov (United States)

    Karan, Santanu; Mallik, Biswanath

    2008-12-01

    High quality organic-inorganic heterojunction photodiodes based on nanostructured copper (II) phthalocyanine (CuPc) and intrinsic zinc oxide (i-ZnO) have been fabricated. The i-ZnO thin films/layers were grown by RF magnetron sputtering on clean indium tin oxide (ITO) coated glass substrates. These films have been characterized by optical absorption and field emission scanning electron microscopy (FESEM). CuPc thin films deposited at room temperature on i-ZnO have exhibited a change in their surface morphology with the post-deposition annealing temperature under normal atmosphere. The electrical dark conductivity and the photoconductivity of ITO/i-ZnO/CuPc/Au sandwich structures have been measured under various photoexcitation intensities using a xenon light source. The devices have shown excellent reproducibility of their electrical characteristics and high rectification ratios. The highest rectification ratio is nearly 831 calculated above the threshold voltage at room temperature for the sample annealed at 250 °C (i.e. Pc 250). The effects of the annealing temperature of CuPc on the surface morphology, rectification ratio, and optical properties have been discussed.

  8. CMOS-based avalanche photodiodes for direct particle detection

    International Nuclear Information System (INIS)

    Stapels, Christopher J.; Squillante, Michael R.; Lawrence, William G.; Augustine, Frank L.; Christian, James F.

    2007-01-01

    Active Pixel Sensors (APSs) in complementary metal-oxide-semiconductor (CMOS) technology are augmenting Charge-Coupled Devices (CCDs) as imaging devices and cameras in some demanding optical imaging applications. Radiation Monitoring Devices are investigating the APS concept for nuclear detection applications and has successfully migrated avalanche photodiode (APD) pixel fabrication to a CMOS environment, creating pixel detectors that can be operated with internal gain as proportional detectors. Amplification of the signal within the diode allows identification of events previously hidden within the readout noise of the electronics. Such devices can be used to read out a scintillation crystal, as in SPECT or PET, and as direct-conversion particle detectors. The charge produced by an ionizing particle in the epitaxial layer is collected by an electric field within the diode in each pixel. The monolithic integration of the readout circuitry with the pixel sensors represents an improved design compared to the current hybrid-detector technology that requires wire or bump bonding. In this work, we investigate designs for CMOS APD detector elements and compare these to typical values for large area devices. We characterize the achievable detector gain and the gain uniformity over the active area. The excess noise in two different pixel structures is compared. The CMOS APD performance is demonstrated by measuring the energy spectra of X-rays from 55 Fe

  9. Mediating broadband light into graphene–silicon Schottky photodiodes by asymmetric silver nanospheroids: effect of shape anisotropy

    Science.gov (United States)

    Bhardwaj, Shivani; Parashar, Piyush K.; Roopak, Sangita; Ji, Alok; Uma, R.; Sharma, R. P.

    2018-05-01

    Designing thinner, more efficient and cost-effective 2D materials/silicon Schottky photodiodes using the plasmonic concept is one of the most recent quests for the photovoltaic research community. This work demonstrates the enhanced performance of graphene–Si Schottky junction solar cells by introducing asymmetric spheroidal shaped Ag nanoparticles (NPs) embedded in a graphene monolayer (GML). The optical signatures of these Ag NPs (oblate, ortho-oblate, prolate and ortho-prolate) have been analyzed by discrete dipole approximation in terms of extinction efficiency and surface plasmon resonance tunability, against the quasi-static approximation. The spatial field distribution is enhanced by optimizing the size (a eff  =  100 nm) and aspect ratio (0.4) for all of the utilized Ag NPs with an optimized graphene environment (t  =  0.1 nm). An improvement of photon absorption in the thin Si wafer for the polychromatic spectral region (λ ~ 300–1100 nm) under an AM 1.5 G solar spectrum has been observed. This resulted in a photocurrent enhancement from 7.98 mA cm‑2 to 10.0 mA cm‑2 for oblate-shaped NPs integrated into GML/Si Schottky junction solar cells as compared to the bare cell. The structure used in this study to improve the graphene–Si Schottky junction’s performance is also advantageous for other graphene-like 2D material-based Schottky devices.

  10. Temporal dependence of transient dark counts in an avalanche photodiode: A solution for power-law behavior of afterpulsing

    Energy Technology Data Exchange (ETDEWEB)

    Akiba, M., E-mail: akiba@nict.go.jp [National Institute of Information and Communications Technology, 4-2-1, Nukuikitamachi, Koganei-City, Tokyo 184-8795 (Japan); Tsujino, K. [Department of Physics, School of Medicine, Tokyo Women' s Medical University, 8-1, Kawadacho, Shinjuku-ku, Tokyo 162-8666 (Japan)

    2016-08-08

    This paper offers a theoretical explanation of the temperature and temporal dependencies of transient dark count rates (DCRs) measured for a linear-mode silicon avalanche photodiode (APD) and the dependencies of afterpulsing that were measured in Geiger-mode Si and InGaAs/InP APDs. The temporal dependencies exhibit power-law behavior, at least to some extent. For the transient DCR, the value of the DCR for a given time period increases with decreases in temperature, while the power-law behavior remains unchanged. The transient DCR is attributed to electron emissions from traps in the multiplication layer of the APD with a high electric field, and its temporal dependence is explained by a continuous change in the electron emission rate as a function of the electric field strength. The electron emission rate is calculated using a quantum model for phonon-assisted tunnel emission. We applied the theory to the temporal dependence of afterpulsing that was measured for Si and InGaAs/InP APDs. The power-law temporal dependence is attributed to the power-law function of the electron emission rate from the traps as a function of their position across the p–n junction of the APD. Deviations from the power-law temporal dependence can be derived from the upper and lower limits of the electric field strength.

  11. Effect of swift heavy Kr ions on complex permittivity of silicon PIN diode

    International Nuclear Information System (INIS)

    Li, Yun; Su, Ping; Yang, Zhimei; Ma, Yao; Gong, Min

    2016-01-01

    Highlights: • The complex permittivity has been studied on Si PIN irradiated by heavy Kr ions. • DLTS was used to investigate damages formed in PIN diode during irradiation. • The recombination of carriers has important influence on the complex permittivity. - Abstract: The complex permittivity has been researched on silicon PIN diodes irradiated by 2150 MeV heavy Kr ions in this article. The difference of complex permittivity spectra from 1 to 10^7 Hz between irradiated and unirradiated were observed and discussed. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured at room temperature (300 K) to study the change of electrical properties in diode after irradiation. Deep level transient spectroscopy (DLTS) was used to investigate damages caused by 2150 MeV heavy Kr ions in diode. Two extra electron traps were observed, which were located at E C -0.31 eV and E C -0.17 eV. It indicated that new defects have been formed in PIN diode during irradiation. A comparison of the results illustrated that not only the carrier density but also the recombination of electron-hole pair have important influences on the properties of complex permittivity. These results offer a further indication of the mechanism about the complex permittivity property of semiconductor device, which could help to make the applications for the semiconductor device controlled by electric signals come true in the fields of optoelectronic integrated circuits, plasma antenna and so on.

  12. Pinning Susceptibility at the Jamming Transition

    Science.gov (United States)

    Graves, Amy; Padgett, Elliot; Goodrich, Carl; Liu, Andrea

    2013-03-01

    Jamming in the presence of fixed or pinned obstacles, representing quenched disorder, is a situation of both practical and theoretical interest. We study the jamming of soft, bidisperse discs in which a subset of discs are pinned while the remaining particles equilibrate around them at a given volume fraction. The obstacles provide a supporting structure for the jammed configuration which not only lowers the jamming threshold, ϕJ, but affects the coordination number and other parameters of interest as the critical point is approached. In the limit of low obstacle density, one can calculate a pinning susceptibility χP, analogous to the magnetic susceptibility, with obstacle density playing the role of the magnetic field. The pinning susceptibility is thus expected to diverge in the thermodynamic limit as χP ~| ϕ -ϕJ | -γP . Finite-size scaling calculations allow us to confirm this and calculate the critical exponent, γP. Acknowledgement is made to the Donors of the Petrolium Research Fund administered by the American Chemical Society, Swarthmore College's Eugene M. Lang Faculty Fellowship, NSF grant DMR-1062638 and DOE grant DE-FG02-05ER46199.

  13. Synchronizability on complex networks via pinning control

    Indian Academy of Sciences (India)

    Synchronizability on complex networks via pinning control. YI LIANG1,2 and XINGYUAN WANG1,∗. 1Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology,. Dalian 116024, China. 2Department of Electronics and Information Engineering, Yili Normal College,. Yining 835000, China. ∗.

  14. Radiographic examination methods for fuel pins

    International Nuclear Information System (INIS)

    Smirnov, V.P.; Dvoretskii, V.G.

    1987-11-01

    To study the fast neutron reactor fuel pins structure the NIIAR Institute used x diffraction, neutronic radiography and autoradiographies. The two first methods are used for internal macrostructure studies, the third method for the plutonium and uranium radial distribution. These methods and the main results are indicated in this document [fr

  15. Physicist pins hopes on particle collider

    CERN Multimedia

    2007-01-01

    Physicist pins hopes on particle collider By Deseret Morning News Published: Monday, Dec. 31, 27 12:4 a.m. MST FONT Scott Thomas, a 187 State University graduate, is working at the frontiers of science. The theoretical physicist is crafting ways to extract fundamental secrets that seem certain to be uncovered by the Large Hadron Collider.

  16. Analytical method for reconstruction pin to pin of the nuclear power density distribution

    International Nuclear Information System (INIS)

    Pessoa, Paulo O.; Silva, Fernando C.; Martinez, Aquilino S.

    2013-01-01

    An accurate and efficient method for reconstructing pin to pin of the nuclear power density distribution, involving the analytical solution of the diffusion equation for two-dimensional neutron energy groups in homogeneous nodes, is presented. The boundary conditions used for analytic as solution are the four currents or fluxes on the surface of the node, which are obtained by Nodal Expansion Method (known as NEM) and four fluxes at the vertices of a node calculated using the finite difference method. The analytical solution found is the homogeneous distribution of neutron flux. Detailed distributions pin to pin inside a fuel assembly are estimated by the product of homogeneous flux distribution by local heterogeneous form function. Furthermore, the form functions of flux and power are used. The results obtained with this method have a good accuracy when compared with reference values. (author)

  17. Analytical method for reconstruction pin to pin of the nuclear power density distribution

    Energy Technology Data Exchange (ETDEWEB)

    Pessoa, Paulo O.; Silva, Fernando C.; Martinez, Aquilino S., E-mail: ppessoa@con.ufrj.br, E-mail: fernando@con.ufrj.br, E-mail: aquilino@imp.ufrj.br [Coordenacao dos Programas de Pos-Graduacao em Engenharia (COPPE/UFRJ), Rio de Janeiro, RJ (Brazil)

    2013-07-01

    An accurate and efficient method for reconstructing pin to pin of the nuclear power density distribution, involving the analytical solution of the diffusion equation for two-dimensional neutron energy groups in homogeneous nodes, is presented. The boundary conditions used for analytic as solution are the four currents or fluxes on the surface of the node, which are obtained by Nodal Expansion Method (known as NEM) and four fluxes at the vertices of a node calculated using the finite difference method. The analytical solution found is the homogeneous distribution of neutron flux. Detailed distributions pin to pin inside a fuel assembly are estimated by the product of homogeneous flux distribution by local heterogeneous form function. Furthermore, the form functions of flux and power are used. The results obtained with this method have a good accuracy when compared with reference values. (author)

  18. Pinning control of complex networked systems synchronization, consensus and flocking of networked systems via pinning

    CERN Document Server

    Su, Housheng

    2013-01-01

    Synchronization, consensus and flocking are ubiquitous requirements in networked systems. Pinning Control of Complex Networked Systems investigates these requirements by using the pinning control strategy, which aims to control the whole dynamical network with huge numbers of nodes by imposing controllers for only a fraction of the nodes. As the direct control of every node in a dynamical network with huge numbers of nodes might be impossible or unnecessary, it’s then very important to use the pinning control strategy for the synchronization of complex dynamical networks. The research on pinning control strategy in consensus and flocking of multi-agent systems can not only help us to better understand the mechanisms of natural collective phenomena, but also benefit applications in mobile sensor/robot networks. This book offers a valuable resource for researchers and engineers working in the fields of control theory and control engineering.   Housheng Su is an Associate Professor at the Department of Contro...

  19. The Influence of Geometrical Parameters in Socket - Pin Connections on the Value of Opening Force / Wpływ Parametrów Geometrycznych W Połączeniach Typu Gniazdo - Trzpień Na Wartość Siły Otwierającej

    Directory of Open Access Journals (Sweden)

    Sadowski T.

    2015-12-01

    Full Text Available The paper presents an analysis of the influence of a number of technological aspects of both the socket and the pin on the value of the force required for joint disconnection. A number of numerical simulations were made in Abaqus program to examine effects of such parameters as: presence of an interference fit, use of spherical latches, application of different rigidity of the pin by making cuts with variable width and length, use of different angles of inclination of the working part of the connection. Models of different simple joints presented in this work, can also operate in large structures forming panels of aircraft structures. For this purpose one of the analyzed geometry of the connection was applied to create a 3-D panel model of the structural element in CAD - SolidWorks program. All analysed models with different geometries were subjected to simulation of opening process. The corresponding critical forces were estimated for the beginning of the failure process. The detailed discussion of all model parameters was included to specify their influence on the whole disconnection of joints. It should be noted that aerospace structures work under complex loading states and further numerical studies are required to extend the presented results.

  20. Post irradiation examination on test fuel pins for PWR

    International Nuclear Information System (INIS)

    Fogaca Filho, N.; Ambrozio Filho, F.

    1981-01-01

    Certain aspects of irradiation technology on test fuel pins for PWR, are studied. The results of post irradiation tests, performed on test fuel pins in hot cells, are presented. The results of the tests permit an evaluation of the effects of irradiation on the fuel and cladding of the pin. (Author) [pt

  1. Primary hip spica with crossed retrograde intramedullary rush pins ...

    African Journals Online (AJOL)

    Bursitis and penetration of pins at the site of Rush pin insertion is a complication associated with this method of treatment. Conclusion: Closed reduction and internal fixation with crossed Rush pins was a superior treatment method in terms of early weight bearing and restoration of normal anatomy. Keywords: Femoral ...

  2. Estimation of wood properties using pin pushing in method with various shapes of the penetration pin

    Directory of Open Access Journals (Sweden)

    Michal Kloiber

    2009-01-01

    Full Text Available The existing penetration methods for the identification of the density of wood that forms a part of structures do not make it possible to describe the density in the entire element profile but only on its surface. However, wood density changes throughout the profile which affects the accuracy of the density determination. The instruments used until now based on the principle of a pin shot into the material thus needed to be supplemented with a test during which the pin would be pushed at least to the centre of the measured element. Pins of 3 mm in diameter were manufactured with a special jig fastening them to a universal testing machine. Using the testing machine, the force required to push the pin in was measured at a constant travel speed. It has been found out that the mechanical work needed for the pin penetration correlates very well with the wood density determined in the surroundings of the place where the pin was pushed in.

  3. Nanowall pinning for enhanced pinning force in YBCO films with nanofabricated structures

    Energy Technology Data Exchange (ETDEWEB)

    Palau, A.; Rouco, V.; Luccas, R.F.; Obradors, X.; Puig, T., E-mail: teresa.puig@icmab.es

    2014-11-15

    Highlights: • High resolution lithography techniques to fabricate artificial pinning centres in high temperature superconductors. • Enhanced critical currents of YBCO films with engineered nanofabricated structures. • Controlled nano-walls with weakened superconductivity acting as strong pinning centres. - Abstract: High resolution nanofabrication tools (Focused Ion Beam and Electron Beam Lithography) have been used to fabricate nano-metric milled structures in high critical current YBCO thin films able to further increase their vortex pinning capabilities. We have demonstrated that pinning forces at 77 K and 3 T are increased by a 70–80% by proper nanostructure designs. Model systems with linear trenches and triangular blind antidots of different sizes, distribution and density have been generated and studied. We demonstrate that specific milled nanostructures can increase the total current through the system at expenses of a limited decrease of cross section. We have identified the length of fabricated nano-walls as the main parameter controlling the pinning potential of nanostructures and thus defined the optimised milling conditions and nanostructure morphology to maximise pinning efficiency.

  4. Genome-wide identification and evolution of the PIN-FORMED (PIN) gene family in Glycine max.

    Science.gov (United States)

    Liu, Yuan; Wei, Haichao

    2017-07-01

    Soybean (Glycine max) is one of the most important crop plants. Wild and cultivated soybean varieties have significant differences worth further investigation, such as plant morphology, seed size, and seed coat development; these characters may be related to auxin biology. The PIN gene family encodes essential transport proteins in cell-to-cell auxin transport, but little research on soybean PIN genes (GmPIN genes) has been done, especially with respect to the evolution and differences between wild and cultivated soybean. In this study, we retrieved 23 GmPIN genes from the latest updated G. max genome database; six GmPIN protein sequences were changed compared with the previous database. Based on the Plant Genome Duplication Database, 18 GmPIN genes have been involved in segment duplication. Three pairs of GmPIN genes arose after the second soybean genome duplication, and six occurred after the first genome duplication. The duplicated GmPIN genes retained similar expression patterns. All the duplicated GmPIN genes experienced purifying selection (K a /K s < 1) to prevent accumulation of non-synonymous mutations and thus remained more similar. In addition, we also focused on the artificial selection of the soybean PIN genes. Five artificially selected GmPIN genes were identified by comparing the genome sequence of 17 wild and 14 cultivated soybean varieties. Our research provides useful and comprehensive basic information for understanding GmPIN genes.

  5. The Half-Pin and the Pin Tract: A Survey of the Limb Lengthening and Reconstruction Society

    Science.gov (United States)

    2013-09-01

    Heikkila J, Magyar G, Toksvig-Larsen S, Giannini S. Fixation strength and pin tract infection of hydroxyapatite-coated tapered pins. Clin Orthop. 2001...Enhanced fixation with hydroxyapatite coated pins. Clin Orthop. 1998;(346):171-177. 13. Magyar G, Toksvig-Larsen S, Moroni A. Hydroxyapatite coating

  6. Performances of photodiode detectors for top and bottom counting detectors of ISS-CREAM experiment

    International Nuclear Information System (INIS)

    Hyun, H.J.; Anderson, T.; Angelaszek, D.; Baek, S.J.; Copley, M.; Coutu, S.; Han, J.H.; Huh, H.G.; Hwang, Y.S.; Im, S.; Jeon, H.B.; Kah, D.H.; Kang, K.H.; Kim, H.J.; Kim, K.C.; Kwashnak, K.; Lee, J.; Lee, M.H.; Link, J.T.; Lutz, L.

    2015-01-01

    The Cosmic Ray Energetics and Mass (CREAM) experiment at the International Space Station (ISS) aims to elucidate the source and acceleration mechanisms of high-energy cosmic rays by measuring the energy spectra from protons to iron. The instrument is planned for launch in 2015 at the ISS, and it comprises a silicon charge detector, a carbon target, top and bottom counting detectors, a calorimeter, and a boronated scintillator detector. The top and bottom counting detectors are developed for separating the electrons from the protons, and each of them comprises a plastic scintillator and a 20×20 silicon photodiode array. Each photodiode is 2.3 cm×2.3 cm in size and exhibits good electrical characteristics. The leakage current is measured to be less than 20 nA/cm 2 at an operating voltage. The signal-to-noise ratio is measured to be better than 70 using commercial electronics, and the radiation hardness is tested using a proton beam. A signal from the photodiode is amplified by VLSI (very-large-scale integration) charge amp/hold circuits, the VA-TA viking chip. Environmental tests are performed using whole assembled photodiode detectors of a flight version. Herein, we present the characteristics of the developed photodiode along with the results of the environmental tests

  7. Performances of photodiode detectors for top and bottom counting detectors of ISS-CREAM experiment

    Energy Technology Data Exchange (ETDEWEB)

    Hyun, H.J. [Kyungpook National University, Daegu 702-701 (Korea, Republic of); Anderson, T. [Pennsylvania State University, University Park, PA 16802 (United States); Angelaszek, D. [University of Maryland, College Park, MD 20740 (United States); Baek, S.J. [Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Copley, M. [University of Maryland, College Park, MD 20740 (United States); Coutu, S. [Pennsylvania State University, University Park, PA 16802 (United States); Han, J.H.; Huh, H.G. [University of Maryland, College Park, MD 20740 (United States); Hwang, Y.S. [Kyungpook National University, Daegu 702-701 (Korea, Republic of); Im, S. [Pennsylvania State University, University Park, PA 16802 (United States); Jeon, H.B.; Kah, D.H.; Kang, K.H.; Kim, H.J. [Kyungpook National University, Daegu 702-701 (Korea, Republic of); Kim, K.C.; Kwashnak, K. [University of Maryland, College Park, MD 20740 (United States); Lee, J. [Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Lee, M.H. [University of Maryland, College Park, MD 20740 (United States); Link, J.T. [NASA GSFC, Greenbelt, MD 20771 (United States); CRESST(USRA), Columbia, MD 21044 (United States); Lutz, L. [University of Maryland, College Park, MD 20740 (United States); and others

    2015-07-01

    The Cosmic Ray Energetics and Mass (CREAM) experiment at the International Space Station (ISS) aims to elucidate the source and acceleration mechanisms of high-energy cosmic rays by measuring the energy spectra from protons to iron. The instrument is planned for launch in 2015 at the ISS, and it comprises a silicon charge detector, a carbon target, top and bottom counting detectors, a calorimeter, and a boronated scintillator detector. The top and bottom counting detectors are developed for separating the electrons from the protons, and each of them comprises a plastic scintillator and a 20×20 silicon photodiode array. Each photodiode is 2.3 cm×2.3 cm in size and exhibits good electrical characteristics. The leakage current is measured to be less than 20 nA/cm{sup 2} at an operating voltage. The signal-to-noise ratio is measured to be better than 70 using commercial electronics, and the radiation hardness is tested using a proton beam. A signal from the photodiode is amplified by VLSI (very-large-scale integration) charge amp/hold circuits, the VA-TA viking chip. Environmental tests are performed using whole assembled photodiode detectors of a flight version. Herein, we present the characteristics of the developed photodiode along with the results of the environmental tests.

  8. a-Si/SiN{sub x} multilayered light absorber for solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Panchal, A. K., E-mail: akp@eed.svnit.ac.in; Rai, D. K.; Mathew, Meril; Solanki, C. S. [Indian Institute of Technology Bombay, Department of Energy Science and Engineering (India)

    2011-06-15

    40 alternate a-Si/SiN{sub x} multilayer are incorporated as an absorber layer in a p-i-n solar cell. The device is fabricated using hot-wire chemical vapor deposition (HWCVD) technique. The structure of the multilayer film is examined by high resolution transmission electron microscopy (HR-TEM) which shows distinct formation of alternate a-Si and SiN{sub x} layers. The a-Si and SiN{sub x} layers have thickness of {approx}3.5 and 4 nm, respectively. The photoluminescence (PL) of multilayer film shows bandgap energy of {approx}2.52 eV, is larger than that of the c-Si and a-Si. Dark and illuminated current-voltage (I-V) characterization of the ML films shows that these ML are photosensitive. In the present work, it is seen that the p-i-n structure with i-layer as ML quantum well (QW) structures show photovoltaic effect with relatively high open-circuit voltage (V{sub OC}). The increment of bandgap energy in PL and high V{sub OC} of the device is attributed to the quantum confinement effect (QCE).

  9. Tribology of silicon-thin-film-coated SiC ceramics and the effects of high energy ion irradiation

    International Nuclear Information System (INIS)

    Kohzaki, Masao; Noda, Shoji; Doi, Harua

    1990-01-01

    The sliding friction coefficients and specific wear of SiC ceramics coated with a silicon thin film (Si/SiC) with and without subsequent Ar + irradiation against a diamond pin were measured with a pin-on-disk tester at room temperature in laboratory air of approximately 50% relative humidity without oil lubrication for 40 h. The friction coefficient of Ar + -irradiated Si/SiC was about 0.05 with a normal load of 9.8 N and remained almost unchanged during the 40 h test, while that of SiC increased from 0.04 to 0.12 during the test. The silicon deposition also reduced the specific wear of SiC to less than one tenth of that of the uncoated SiC. Effectively no wear was detected in Si/SiC irradiated to doses of over 2x10 16 ions cm -2 . (orig.)

  10. Elementary pinning force for a superconducting vortex

    International Nuclear Information System (INIS)

    Hyun, O.B.; Finnemore, D.K.; Schwartzkopf, L.; Clem, J.R.

    1987-01-01

    The elementary pinning force f/sub p/ has been measured for a single vortex trapped in one of the superconducting layers of a cross-strip Josephson junction. At temperatures close to the transition temperature the vortex can be pushed across the junction by a transport current. The vortex is found to move in a small number of discrete steps before it exits the junction. The pinning force for each site is found to be asymmetric and to have a value of about 10/sup -6/ N/m at the reduced temperature, t = T/T/sub c/ = 0.95. As a function of temperature, f/sub p/ is found to vary approximately as (1-t)/sup 3/2/. .AE

  11. Top-nozzle mounted replacement guide pin assemblies

    International Nuclear Information System (INIS)

    Gilmore, C.B.; Andrews, W.H.

    1993-01-01

    A replacement guide pin assembly is provided for aligning a nuclear fuel assembly with an upper core plate of a nuclear reactor core. The guide pin assembly includes a guide pin body having a radially expandable base insertable within a hole in the top nozzle, a ferrule insertable within the guide pin base and capable of imparting a radially and outwardly directed force on the expandable base to expand it within the hole of the top nozzle and thereby secure the guide pin body to the top nozzle in response to a predetermined displacement of the ferrule relative to the guide pin body along its longitudinal axis, and a lock screw interfitted with the ferrule and threaded into the guide pin body so as to produce the predetermined displacement of the ferrule. (author)

  12. Signal amplification and leakage current suppression in amorphous silicon p-i-n diodes by field profile tailoring

    International Nuclear Information System (INIS)

    Hong, W.S.; Zhong, F.; Mireshghi, A.; Perez-Mendez, V.

    1999-01-01

    The performance of amorphous silicon p-i-n diodes as radiation detectors in terms of signal amplitude can be greatly improved when there is a built-in signal gain mechanism. The authors describe an avalanche gain mechanism which is achieved by introducing stacked intrinsic, p-type, and n-type layers into the diode structure. They replaced the intrinsic layer of the conventional p-i-n diode with i 1 -p-i 2 -n-i 3 multilayers. The i 2 layer (typically 1 ∼ 3 microm) achieves an electric field > 10 6 V/cm, while maintaining the p-i interfaces to the metallic contact at electric fields 4 V/cm, when the diode is fully depleted. For use in photo-diode applications the whole structure is less than 10 microm thick. Avalanche gains of 10 ∼ 50 can be obtained when the diode is biased to ∼ 500 V. Also, dividing the electrodes to strips of 2 microm width and 20 microm pitch reduced the leakage current up to an order of magnitude, and increased light transmission without creating inactive regions

  13. Performance measurements of hybrid PIN diode arrays

    International Nuclear Information System (INIS)

    Jernigan, J.G.; Arens, J.F.; Collins, T.; Herring, J.; Shapiro, S.L.; Wilburn, C.D.

    1990-05-01

    We report on the successful effort to develop hybrid PIN diode arrays and to demonstrate their potential as components of vertex detectors. Hybrid pixel arrays have been fabricated by the Hughes Aircraft Co. by bump bonding readout chips developed by Hughes to an array of PIN diodes manufactured by Micron Semiconductor Inc. These hybrid pixel arrays were constructed in two configurations. One array format having 10 x 64 pixels, each 120 μm square, and the other format having 256 x 256 pixels, each 30 μm square. In both cases, the thickness of the PIN diode layer is 300 μm. Measurements of detector performance show that excellent position resolution can be achieved by interpolation. By determining the centroid of the charge cloud which spreads charge into a number of neighboring pixels, a spatial resolution of a few microns has been attained. The noise has been measured to be about 300 electrons (rms) at room temperature, as expected from KTC and dark current considerations, yielding a signal-to-noise ratio of about 100 for minimum ionizing particles. 4 refs., 13 figs

  14. Some n-p (Hg,Cd)Te photodiodes for 8-14 micrometer heterodyne applications

    Science.gov (United States)

    Shanley, J. F.; Flanagan, C. T.

    1980-01-01

    The results describing the dc and CO2 laser heterodyne characteristics of a three element photodiode array and single element and four element photodiode arrays are presented. The measured data shows that the n(+)-p configuration is capable of achieving bandwidths of 475 to 725 MHz and noise equivalent powers of 3.2 x 10 to the minus 20th power W/Hz at 77 K and 1.0 x 10 to the minus 19th power W/Hz at 145 K. The n(+)-n(-)-p photodiodes exhibited wide bandwidths (approximately 2.0 GHz) and fairly good effective heterodyne quantum efficiencies (approximately 13-30 percent at 2.0 GHz). Noise equivalent powers ranging from 1.44 x 10 to the minus 19th power W/Hz to 6.23 x 10 to the minus 20th power W/Hz were measured at 2.0 GHz.

  15. Design and Manipulation 3D Imaging System by using Photodiode Grid

    Directory of Open Access Journals (Sweden)

    Seyed Mahdi Safavi

    2011-06-01

    Full Text Available Introduction: Radiation imaging is one of the applicable methods in diagnostic medicine and nondestructive testing for industrial applications. In nondestructive 3D imaging, in addition to the radiation source, there is a requirement for a suitable detection system, data acquisition system, mechanical sections for moving objects, reconstruction algorithm and finally a computer for processing and control. Method and Materials: One of the most important components of a digital radiation imaging system is its detector. Light photodiode is a new light sensor which is used in digital imaging systems because of its high efficiency. In the present research, a photodiode grid has been implemented to design and make a detection system. The photodiode grid has an array of 10×10 photodiodes in a 50×50 mm2 area. Beside the photodiode grid, a control board has been designed. Furthermore, a mechanical system has been designed to move the objects in the horizontal and vertical directions, and also rotate it around its own axis. The maximum displacement in the horizontal and vertical directions is 60 cm with step accuracy of about 0.015 mm. Step accuracy of the rotational movement is about 0.9 degrees.  Results: After the imaging system was constructed, background and uniformity of the system were tested. All the photodiodes in the imaging system showed good uniformity. The image data was transferred to a computer and processed using a MATLAB program to display the images on a monitor. As the physical resolution of the system is about the pixel size (5 mm, only the overall images of the object's dimensions were expected to be produced. Discussion and Conclusion: The fidelity of the detection system has been successfully tested using a visible light source and several test samples. The presented system is able to reconstruct 3D images and obtain cross-sectional images of the objects, by using the image processing algorithm specifically designed for it.

  16. Comparative evaluation of InAs/GaSb superlattices for mid infrared detection: p-i-n versus residual doping

    Science.gov (United States)

    Korkmaz, Melih; Kaldirim, Melih; Arikan, Bulent; Serincan, Uğur; Aslan, Bulent

    2015-08-01

    We report on the opto-electronic characterization of an InAs/GaSb superlattice (SL) midwave infrared p-i-n photodetector structure (pin-SL) in comparison with the same structure with no intentional doping (i-SL). Both structures were grown on an n-GaSb substrate using molecular beam epitaxy. The nominally undoped structure (i-SL) presented p-i-n like behavior and showed a photovoltaic mode photoresponse due to the residual doping and native defects in this material system. For ˜77 K operation, 0.76 and 0.11 A W-1 responsivity values were obtained at 4 μm from the pin-SL and i-SL structures, respectively. Activation energy analysis showed that the recombination current was dominant in both structures but different recombination centers were involved. The same i-SL structure was also grown on a semi-insulating (SI)-GaAs substrate to study the contribution of the substrate to the carrier density in the SL layers. Temperature dependent Hall effect measurements showed that the nominally undoped structure presented both n-type and p-type conductivities; however, the temperature at which the carrier type switched polarity was observed to be at higher values when the i-SL structure was grown on the SI-GaAs substrate. In addition, a higher carrier density was observed for i-SL on the GaSb substrate than on the GaAs substrate.

  17. Improved x-ray detection and particle identification with avalanche photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Diepold, Marc, E-mail: marc.diepold@mpq.mpg.de; Franke, Beatrice; Götzfried, Johannes; Hänsch, Theodor W.; Krauth, Julian J.; Mulhauser, Françoise; Nebel, Tobias; Pohl, Randolf [Max Planck Institute of Quantum Optics, 85748 Garching (Germany); Fernandes, Luis M. P.; Amaro, Fernando D.; Gouvea, Andrea L.; Monteiro, Cristina M. B.; Santos, Joaquim M. F. dos [LIBPhys, Physics Department, Universidade de Coimbra, 3004-516 Coimbra (Portugal); Machado, Jorge [Laboratório de Instrumentação, Engenharia Biomédica e Física da Radiação (LIBPhys-UNL) e Departamento de Física da Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa, Monte da Caparica, 2892-516 Caparica (Portugal); Laboratoire Kastler Brossel, UPMC-Sorbonne Universités, CNRS, ENS-PSL Research University, Collège de France, 4 place Jussieu, case 74, 75005 Paris (France); Amaro, Pedro; Santos, José Paulo [Laboratório de Instrumentação, Engenharia Biomédica e Física da Radiação (LIBPhys-UNL) e Departamento de Física da Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa, Monte da Caparica, 2892-516 Caparica (Portugal); and others

    2015-05-15

    Avalanche photodiodes are commonly used as detectors for low energy x-rays. In this work, we report on a fitting technique used to account for different detector responses resulting from photoabsorption in the various avalanche photodiode layers. The use of this technique results in an improvement of the energy resolution at 8.2 keV by up to a factor of 2 and corrects the timing information by up to 25 ns to account for space dependent electron drift time. In addition, this waveform analysis is used for particle identification, e.g., to distinguish between x-rays and MeV electrons in our experiment.

  18. Ultralow-noise readout circuit with an avalanche photodiode: toward a photon-number-resolving detector.

    Science.gov (United States)

    Tsujino, Kenji; Akiba, Makoto; Sasaki, Masahide

    2007-03-01

    The charge-integration readout circuit was fabricated to achieve an ultralow-noise preamplifier for photoelectrons generated in an avalanche photodiode with linear mode operation at 77 K. To reduce the various kinds of noise, the capacitive transimpedance amplifier was used and consisted of low-capacitance circuit elements that were cooled with liquid nitrogen. As a result, the readout noise is equal to 3.0 electrons averaged for a period of 40 ms. We discuss the requirements for avalanche photodiodes to achieve photon-number-resolving detectors below this noise level.

  19. MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection

    Science.gov (United States)

    2012-09-01

    due to metal catalysis and wet etching. Using the blackened SiGe/Si, MSM photodiodes were fabricated and tested. The lowering of reflection using a...MSM- Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection by Fred...Do not return it to the originator. Army Research Laboratory Adelphi, MD 20783-1197 ARL-TR-6176 September 2012 MSM- Metal

  20. Field profile tailoring in a-Si:H radiation detectors

    International Nuclear Information System (INIS)

    Fujieda, I.; Cho, G.; Conti, M.; Drewery, J.; Kaplan, S.N.; Perez-Mendez, V.; Quershi, S.; Wildermuth, D.; Street, R.A.

    1990-03-01

    The capability of tailoring the field profile in reverse-biased a-Si:H diodes by doping and/or manipulating electrode shapes opens a way to many interesting device structures. Charge collection in a-Si:H radiation detectors is improved for high LET particle detection by inserting thin doped layers into the i-layer of the usual p-i-n diode. This buried p-i-n structure enables us to apply higher reverse-bias and the electric field is enhanced in the mid i-layer. Field profiles of the new structures are calculated and the improved charge collection process is discussed. Also discussed is the possibility of field profile tailoring by utilizing the fixed space charges in i-layers and/or manipulating electrode shapes of the reverse-biased p-i-n diodes. 10 refs., 7 figs

  1. Analysis of three idealized reactor configurations: plate, pin, and homogeneous

    International Nuclear Information System (INIS)

    McKnight, R.D.

    1983-01-01

    Detailed Monte Carlo calculations have been performed for three distinct configurations of an idealized fast critical assembly. This idealized assembly was based on the LMFBR benchmark critical assembly ZPR-6/7. In the first configuration, the entire core was loaded with the plate unit cell of ZPR-6/7. In the second configuration, the entire core was loaded with the ZPR sodium-filled pin calandria. The actual ZPR pin calandria are loaded with mixed (U,Pu) oxide pins which closely match the composition of the ZPR-6/7 plate unit cell. For the present study, slight adjustments were made in the atom concentrations and the length of the pin calandria in order to make the core boundaries and average composition for the pin-cell configuration identical to those of the plate-cell configuration. In the third configuration, the core was homogeneous, again with identical core boundaries and average composition as the plate and pin configurations

  2. Machine optimization in construction of pin blocks

    International Nuclear Information System (INIS)

    Vlasov, G.A.; Zimin, A.M.

    2000-01-01

    The possibility for design of the parts by machine optimization method involves the advent of program products, such as NASTRAN, NIZA, ANSYS and others. The machine optimization is carried out not for partial detail with conforming boundary conditions but a pin block in the assembly in terms of as strengthening, so its dynamic loading. The brief report of optimization using in the ANSYS program is demonstrated. The application of the machine optimization makes it possible to decrease the equivalent static stress to 7 % and load stress to 19 % as compared with original construction [ru

  3. Multi-megawatt pin core space reactor

    International Nuclear Information System (INIS)

    Hornung, R.J.; Normand, E.; Stevens, A.; Teare, K.R.

    1989-01-01

    Boeing has assembled an experienced team to perform a concept definition study of a multi-megawatt (MMW) nuclear power system designed to provide burst power for a space based platform. The design uses the hydrogen needed for platform cooling as the working fluid in an open thermodynamic cycle. The hydrogen is heated by a pin-fuel, fast spectrum reactor and generates power through a pair of counter-rotating turbines which drive four wound rotor alternators. This paper gives an overview of the system, concentrating on features of the reactor design and operation

  4. Analytic models for fuel pin transient performance

    International Nuclear Information System (INIS)

    Bard, F.E.; Fox, G.L.; Washburn, D.F.; Hanson, J.E.

    1976-09-01

    HEDL's ability to analyze various mechanisms that operate within a fuel pin has progressed substantially through development of codes such as PECTCLAD, which solves cladding response, and DSTRESS, which solves fuel response. The PECTCLAD results show good correlation with a variety of mechanical tests on cladding material and also demonstrate the significance of cladding strength when applying the life fraction rule. The DSTRESS results have shown that fuel deforms sufficiently during overpower transient tests that available volumes are filled, whether in the form of a central cavity or start-up cracks

  5. Optimum Prestress of Tanks with Pinned Base

    DEFF Research Database (Denmark)

    Brøndum-Nielsen, Troels

    1998-01-01

    Amin Ghali and Eleanor Elliott presented in their paper an interesting suggestion for prestressing of circular tanks without sliding joints. For many prestressed tanks the following construction procedure is adopted:In order to ensure compressive hoop forces in the wall near the base, the wall...... is allowed to slide freely in the radial direction during tensioning (free base).After tensioning such displacements are prevented (pinned base). The present paper addresses the problem of prestress of such tanks.Keywords: circular prestressing; creep properties; prestressed concrete; redistribution...

  6. Prototype for the measurement of parameters in the Mammography Unity using photodiodes; Prototipo para la medicion de parametros en una Unidad de Mamografia utilizando fotodiodos

    Energy Technology Data Exchange (ETDEWEB)

    Mercado H, I.; Ramirez J, F.J.; Tovar M, V.; Becerril V, A. [Instituto Nacional de Investigaciones Nucleares, Salazar, Estado de Mexico C.P. 52045 (Mexico)

    1999-07-01

    It has been developed a prototype which makes possible to measure the kilo voltage applied to the X-ray tube, the exposure time of the radiation beam and the yield expressed in kerma in air K a (mGy/m As) o a mammography unit. The instrument consists of a radiation detector, an acquisition circuit, a stage of analogical processing of the signal connected to an analogic-digital converter and a display system of the results. The detection section is composed by a pair of photodiodes PIN type in which to do make the measurement of kilo voltage one of them is covered by an aluminium filter (Al) and the other one by a molybdenum filter (Mo). The measurements were done in a mammography unit which possess a generator of high frequency, with a molybdenum anode, a window 8 mm Beryllium (Be) and an additional filtration of 30 {mu} m Mo. The measurements obtained were compared with commercial instruments finding maximum variations of 2 % of value obtained. This prototype has been developed with the idea to obtain in a future a commercial instrument, for be used mainly in the hospitable institutions as an auxiliary tool in the Quality assurance programs in radiodiagnostic. (Author)

  7. High-sensitivity high-stability silicon photodiodes for DUV, VUV and EUV spectral ranges

    NARCIS (Netherlands)

    Shi, L.; Nihtianov, S.; Scholze, F.; Gottwald, A.; Nanver, L.K.

    2011-01-01

    In this paper, the optical and electrical performance of a newly developed silicon photodiode based on pure boron CVD technology (PureB-diodes) is introduced. Due to their extremely shallow p-n junction, with the depletion zone starting only a few nanometers below the surf ce, and nm-thin

  8. Charge-Separation Dynamics in Inorganic-Organic Ternary Blends for Efficient Infrared Photodiodes

    NARCIS (Netherlands)

    Jarzab, Dorota; Szendrei, Krisztina; Yarema, Maksym; Pichler, Stefan; Heiss, Wolfgang; Loi, Maria A.

    2011-01-01

    Knowledge about the working mechanism of the PbS:P3HT:PCBM [P3HT=poly(3-hexylthiophene), PCBM=[6,6]-phenyl-C(61) -butyric acid methyl ester] hybrid blend used for efficient near-infrared photodiodes is obtained from time-resolved photoluminescence (PL) studies. To understand the role of each

  9. Microprocessor system to recover data from a self-scanning photodiode array

    International Nuclear Information System (INIS)

    Koppel, L.N.; Gadd, T.J.

    1975-01-01

    A microprocessor system developed at Lawrence Livermore Laboratory has expedited the recovery of data describing the low energy x-ray spectra radiated by laser-fusion targets. An Intel microprocessor controls the digitization and scanning of the data stream of an x-ray-sensitive self-scanning photodiode array incorporated in a crystal diffraction spectrometer

  10. Experimental multi-photon-resolving detector using a single avalanche photodiode

    Czech Academy of Sciences Publication Activity Database

    Haderka, Ondřej; Hamar, M.; Peřina ml., Jan

    2004-01-01

    Roč. 28, - (2004), s. 149-154 ISSN 1434-6060 R&D Projects: GA MŠk LN00A015 Keywords : multichannel detector * avalanche photodiode Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.692, year: 2004

  11. Behavioral electromagnetic models of high‐speed p‐i‐n photodiodes

    DEFF Research Database (Denmark)

    Jiang, Chenhui; Krozer, Viktor; Johansen, Tom Keinicke

    2011-01-01

    This article presents a methodology for developing small‐signal behavioral electromagnetic (EM) models of p‐i‐n photodiodes (PDs) for high‐speed applications. The EM model includes RC bandwidth limitation effect and transit‐time effect. The model is capable of accurately modeling arbitrary complex...

  12. HPLC-photodiode array detection analysis of curcuminoids in Curcuma species indigenous to Indonesia

    NARCIS (Netherlands)

    Bos, Rein; Windono, Tri; Woerdenbag, Herman J.; Boersma, Ykelien L.; Koulman, Albert; Kayser, Oliver

    An optimized HPLC method with photodiode array detection was developed and applied to analyse the curcuminoids curcumin, demethoxycurcumin, and bis-demethoxycurcumin in rhizomes of Curcuma mangga Val &. v. Zijp, C. heyneana Val. & v. Zijp, C. aeruginosa Roxb. and C. soloensis Val. (Zingiberaceae),

  13. An Intensified Photodiode Array for Characterizing Argon Plasma Jets on the Plasma Liner Experiment

    Science.gov (United States)

    Davis, J. S.; Awe, T. J.; Hsu, S. C.; Case, A.

    2011-10-01

    The Plasma Liner Experiment (PLX) will merge 30 high Mach number plasma jets to form an imploding spherical plasma liner for high energy density physics and magneto-inertial fusion studies. The peak stagnation pressures achieved will be highly dependent on the implosion velocity of the liner, which is in turn dependent on the velocities of the merging plasma jets. For initial experiments characterizing single jet propagation, an array of three intensified photodiode (gain of roughly 25 dB and a spectral range of 350-1100 nm) will be used to measure the jet's velocity (up to 50 km/s) and acceleration (if any) as it travels from the chamber wall toward the center of a 9 ft. diameter spherical vacuum chamber. By adding filters to the photodiodes, it will be possible to correlate stages of jet evolution to specific argon emission lines, thus providing information on the state of the argon plasma as it propagates. Alignment and light collection are achieved via an aperture, lens, and fiber optic chain with the photodiodes themselves situated in an electromagnetically shielded ``screen cage.'' This poster will discuss the detailed design, setup, alignment, and initial experimental data of the photodiode array. Supported by DOE Fusion Energy Sciences.

  14. Photodiode area effect on performance of X-ray CMOS active pixel sensors

    Science.gov (United States)

    Kim, M. S.; Kim, Y.; Kim, G.; Lim, K. T.; Cho, G.; Kim, D.

    2018-02-01

    Compared to conventional TFT-based X-ray imaging devices, CMOS-based X-ray imaging sensors are considered next generation because they can be manufactured in very small pixel pitches and can acquire high-speed images. In addition, CMOS-based sensors have the advantage of integration of various functional circuits within the sensor. The image quality can also be improved by the high fill-factor in large pixels. If the size of the subject is small, the size of the pixel must be reduced as a consequence. In addition, the fill factor must be reduced to aggregate various functional circuits within the pixel. In this study, 3T-APS (active pixel sensor) with photodiodes of four different sizes were fabricated and evaluated. It is well known that a larger photodiode leads to improved overall performance. Nonetheless, if the size of the photodiode is > 1000 μm2, the degree to which the sensor performance increases as the photodiode size increases, is reduced. As a result, considering the fill factor, pixel-pitch > 32 μm is not necessary to achieve high-efficiency image quality. In addition, poor image quality is to be expected unless special sensor-design techniques are included for sensors with a pixel pitch of 25 μm or less.

  15. Sodium erosion of boron carbide from breached absorber pins

    International Nuclear Information System (INIS)

    Basmajian, J.A.; Baker, D.E.

    1981-03-01

    The purpose of the irradiation experiment was to provide an engineering demonstration of the irradiation behavior of breached boron carbide absorber pins. By building defects into the cladding of prototypic absorber pins, and performing the irradiation under typical FFTF operating conditions, a qualitative assessment of the consequences of a breach was achieved. Additionally, a direct comparison of pin behavior with that of the ex-reactor test could be made

  16. SiC flame sensors for gas turbine control systems

    Science.gov (United States)

    Brown, Dale M.; Downey, Evan; Kretchmer, Jim; Michon, Gerald; Emily Shu; Schneider, Don

    1998-05-01

    The research and development activities carried out to develop a SiC flame sensor for gas turbines utilized for power generation are discussed. These activities included the fabrication and characterization of SiC UV photodiodes and small SiC signal diodes as well as the designing and testing of production flame detector assemblies. The characteristics that make this solid state flame detector particularly useful for dry low NO x (DLN) premixed oil and natural gas fuels will be described. Since this device provides both analog dc and ac output signals, turbine combustor mode tracking, combustion flame dynamics and flame intensity tracking have been demonstrated. Sensors designed for production have been built, qualified and field tested. These sensors are now being installed in gas turbine power plants and are a component part of the turbine control system. This development has resulted in the first commercialized turbine control application to use SiC electronic devices.

  17. Development of 3D pseudo pin-by-pin calculation methodology in ANC

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, B.; Mayhue, L.; Huria, H.; Ivanov, B. [Westinghouse Electric Company LLC, 1000 Westinghouse Drive, Cranberry, PA 16066 (United States)

    2012-07-01

    Advanced cores and fuel assembly designs have been developed to improve operational flexibility, economic performance and further enhance safety features of nuclear power plants. The simulation of these new designs, along with strong heterogeneous fuel loading, have brought new challenges to the reactor physics methodologies currently employed in the industrial codes for core analyses. Control rod insertion during normal operation is one operational feature in the AP1000{sup R} plant of Westinghouse next generation Pressurized Water Reactor (PWR) design. This design improves its operational flexibility and efficiency but significantly challenges the conventional reactor physics methods, especially in pin power calculations. The mixture loading of fuel assemblies with significant neutron spectrums causes a strong interaction between different fuel assembly types that is not fully captured with the current core design codes. To overcome the weaknesses of the conventional methods, Westinghouse has developed a state-of-the-art 3D Pin-by-Pin Calculation Methodology (P3C) and successfully implemented in the Westinghouse core design code ANC. The new methodology has been qualified and licensed for pin power prediction. The 3D P3C methodology along with its application and validation will be discussed in the paper. (authors)

  18. Development of 3D pseudo pin-by-pin calculation methodology in ANC

    International Nuclear Information System (INIS)

    Zhang, B.; Mayhue, L.; Huria, H.; Ivanov, B.

    2012-01-01

    Advanced cores and fuel assembly designs have been developed to improve operational flexibility, economic performance and further enhance safety features of nuclear power plants. The simulation of these new designs, along with strong heterogeneous fuel loading, have brought new challenges to the reactor physics methodologies currently employed in the industrial codes for core analyses. Control rod insertion during normal operation is one operational feature in the AP1000 R plant of Westinghouse next generation Pressurized Water Reactor (PWR) design. This design improves its operational flexibility and efficiency but significantly challenges the conventional reactor physics methods, especially in pin power calculations. The mixture loading of fuel assemblies with significant neutron spectrums causes a strong interaction between different fuel assembly types that is not fully captured with the current core design codes. To overcome the weaknesses of the conventional methods, Westinghouse has developed a state-of-the-art 3D Pin-by-Pin Calculation Methodology (P3C) and successfully implemented in the Westinghouse core design code ANC. The new methodology has been qualified and licensed for pin power prediction. The 3D P3C methodology along with its application and validation will be discussed in the paper. (authors)

  19. Comparison of proton microbeam and gamma irradiation for the radiation hardness testing of silicon PIN diodes

    Science.gov (United States)

    Jakšić, M.; Grilj, V.; Skukan, N.; Majer, M.; Jung, H. K.; Kim, J. Y.; Lee, N. H.

    2013-09-01

    Simple and cost-effective solutions using Si PIN diodes as detectors are presently utilized in various radiation-related applications in which excessive exposure to radiation degrades their charge transport properties. One of the conventional methods for the radiation hardness testing of such devices is time-consuming irradiation with electron beam or gamma-ray irradiation facilities, high-energy proton accelerators, or with neutrons from research reactors. Recently, for the purpose of radiation hardness testing, a much faster nuclear microprobe based approach utilizing proton irradiation has been developed. To compare the two different irradiation techniques, silicon PIN diodes have been irradiated with a Co-60 gamma radiation source and with a 6 MeV proton microbeam. The signal degradation in the silicon PIN diodes for both irradiation conditions has been probed by the IBIC (ion beam induced charge) technique, which can precisely monitor changes in charge collection efficiency. The results presented are reviewed on the basis of displacement damage calculations and NIEL (non-ionizing energy loss) concept.

  20. Enhancement of the Si p-n diode NIR photoresponse by embedding β-FeSi2 nanocrystallites.

    Science.gov (United States)

    Shevlyagin, A V; Goroshko, D L; Chusovitin, E A; Galkin, K N; Galkin, N G; Gutakovskii, A K

    2015-10-05

    By using solid phase epitaxy of thin Fe films and molecular beam epitaxy of Si, a p(+)-Si/p-Si/β-FeSi2 nanocrystallites/n-Si(111) diode structure was fabricated. Transmission electron microscopy data confirmed a well-defined multilayered structure with embedded nanocrystallites of two typical sizes: 3-4 and 15-20 nm, and almost coherent epitaxy of the nanocrystallites with the Si matrix. The diode at zero bias conditions exhibited a current responsivity of 1.7 mA/W, an external quantum efficiency of about 0.2%, and a specific detectivity of 1.2 × 10(9) cm × Hz(1/2)/W at a wavelength of 1300 nm at room temperature. In the avalanche mode, the responsivity reached up to 20 mA/W (2% in terms of efficiency) with a value of avalanche gain equal to 5. The data obtained indicate that embedding of β-FeSi2 nanocrystallites into the depletion region of the Si p-n junction results in expansion of the spectral sensitivity up to 1600 nm and an increase of the photoresponse by more than two orders of magnitude in comparison with a conventional Si p-n junction. Thereby, fabricated structure combines advantage of the silicon photodiode functionality and simplicity with near infrared light detection capability of β-FeSi2.

  1. Heat transfer in a fuel pin shipping container

    International Nuclear Information System (INIS)

    Ingham, J.G.

    1980-01-01

    Maximum cladding temperatures occur when the IDENT 1578 fuel pin shipping container is installed in the T-3 Cask. The maximum allowable cladding temperature of 800 0 F is reached when the rate of energy deposited in the 19-pin basket reaches 400 watts. Since 45% of the energy which is generated in the fuel escapes the 19-pin basket without being deposited, mostly gamma energy, the maximum allowable rate of heat generation is 400/.55 = 727 watts. Similarly, the maximum allowable cladding temperature of 800 0 F is reached when the rate of energy deposited in the 40-pin basket reaches 465 watts. Since 33% of the energy which is generated in the fuel escapes the 40-pin basket without being deposited, mostly gamma energy, the maximum allowable rate of heat generation is 465/.66 = 704 watts. The IDENT 1578 fuel pin shipping container therefore meets its thermal design criteria. IDENT 1578 can handle fuel pins with a decay heat load of 600 watts while maintaining the maximum fuel pin cladding temperature below 800 0 F. The emissivities which were determined from the test results for the basket tubes and container are relatively low and correspond to new, shiny conditions. As the IDENT 1578 container is exposed to high temperatures for extended periods of time during the transportation of fuel pins, the emissivities will probably increase. This will result in reduced temperatures

  2. Nano-engineered pinning centres in YBCO superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Crisan, A., E-mail: adrian.crisan@infim.ro [National Institute for Materials Physics Bucharest, 105 bis Atomistilor Str., 077125 Magurele (Romania); School of Metallurgy and Materials, University of Birmingham, Edgbaston, B15 2TT Birmingham (United Kingdom); Dang, V.S. [School of Metallurgy and Materials, University of Birmingham, Edgbaston, B15 2TT Birmingham (United Kingdom); Nano and Energy Center, VNU Hanoi University of Science, 334 Nguyen Trai, Thanh Xuan, Hanoi (Viet Nam); Mikheenko, P. [School of Metallurgy and Materials, University of Birmingham, Edgbaston, B15 2TT Birmingham (United Kingdom); Department of Physics, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo (Norway)

    2017-02-15

    Highlights: • Power applications of YBCO films/coated conductors in technological relevant magnetic fields requires nano-engineered pinning centre. • Three approaches have been proposed: substrate decoration, quasi-multilayers, and targets with secondary phase nano-inclusions. • Combination of all three approaches greatly increased critical current in YBCO films. • Bulk pinning force, pinning potential, and critical current density are estimated and discussed in relation with the type and strength of pinning centres related to the defects evidenced by Transmission Electron Microscopy. - Abstract: For practical applications of superconducting materials in applied magnetic fields, artificial pinning centres in addition to natural ones are required to oppose the Lorentz force. These pinning centres are actually various types of defects in the superconductor matrix. The pinning centres can be categorised on their dimension (volume, surface or point) and on their character (normal cores or Δκ cores). Different samples have been produced by Pulsed Laser Deposition, with various thicknesses, temperatures and nanostructured additions to the superconducting matrix. They have been characterized by SQUID Magnetic Properties Measurement System and Physical Properties Measurement System, as well as by Transmission Electron Microscopy (TEM). Correlations between pinning architecture, TEM images, and critical currents at various fields and field orientations will be shown for a large number of YBa{sub 2}Cu{sub 3}O{sub x} films with various types and architectures of artificial pinning centres.

  3. Study of the Radiation Hardness of VCSEL and PIN Arrays

    CERN Document Server

    Gan, K.K.; Kagan, H.P.; Kass, R.D.; Law, A.; Rau, A.; Smith, D.S.; Lebbai, M.R.M.; Skubic, P.L.; Abi, B.; Rizardinova, F.

    2008-01-01

    The silicon trackers of the ATLAS experiment at LHC (CERN) use optical links for data transmission. VCSEL arrays operating at 850 nm are used to transmit optical signals while PIN arrays are used to convert the optical signals into electrical signals. We investigate the feasibility of using the devices at the Super LHC (SLHC). We irradiated VCSEL and GaAs PIN arrays from three vendors and silicon PIN arrays from one vendor. All arrays can be operated up to the SLHC dosage except the GaAs PIN arrays which have very low responsivities after irradiation and hence are probably not suitable for the SLHC application.

  4. Dynamic Phases of Vortices in Superconductors with Periodic Pinning

    International Nuclear Information System (INIS)

    Reichhardt, C.; Olson, C.; Nori, F.

    1997-01-01

    We present results from extensive simulations of driven vortex lattices interacting with periodic arrays of pinning sites. Changing an applied driving force produces a rich variety of novel dynamical plastic flow phases which are very distinct from those observed in systems with random pinning arrays. Signatures of the transition between these different dynamical phases include sudden jumps in the current-voltage curves as well as marked changes in the vortex trajectories and vortex lattice order. Several dynamical phase diagrams are obtained as a function of commensurability, pinning strength, and spatial order of the pinning sites. copyright 1997 The American Physical Society

  5. FABRICE process for the refrabrication of experimental pins in a hot cell, from pins pre-irradiated in power reactors

    International Nuclear Information System (INIS)

    Vignesoult, N.; Atabek, R.; Ducas, S.

    1982-06-01

    The Fabrice ''hot cell refabrication'' process for small pins from very long irradiated fuel elements was developed at the CEA to allow parametric studies of the irradiation behavior of pins from nuclear power plants. Since this operation required complete assurance of the validity of the process, qualification of the fabrication was performed on test pins, refabricated in the hot cell, as well as irradiation qualification. The latter qualification was intended to demonstrate that, in identical experimental irradiation conditions, the refabricated Fabrice pins behaved in the same way as whole pins with the same initial characteristics. This qualification of the Fabrice process, dealing with more than twenty pins at different burnups, showed that fabrication did not alter: the inherent characteristics of the sampled fuel element and the irradiation behavior of the sampled fuel element [fr

  6. Photoresponse analysis of the CMOS photodiodes for CMOS x-ray image sensor

    International Nuclear Information System (INIS)

    Kim, Young Soo; Ha, Jang Ho; Kim, Han Soo; Yeo, Sun Mok

    2012-01-01

    Although in the short term CMOS active pixel sensors (APSs) cannot compete with the conventionally used charge coupled devices (CCDs) for high quality scientific imaging, recent development in CMOS APSs indicate that CMOS performance level of CCDs in several domains. CMOS APSs possess thereby a number of advantages such as simpler driving requirements and low power operation. CMOS image sensors can be processed in standard CMOS technologies and the potential of on-chip integration of analog and digital circuitry makes them more suitable for several vision systems where system cost is of importance. Moreover, CMOS imagers can directly benefit from on-going technological progress in the field of CMOS technologies. Due to these advantages, the CMOS APSs are currently being investigated actively for various applications such as star tracker, navigation camera and X-ray imaging etc. In most detection systems, it is thought that the sensor is most important, since this decides the signal and noise level. So, in CMOS APSs, the pixel is very important compared to other functional blocks. In order to predict the performance of such image sensor, a detailed understanding of the photocurrent generation in the photodiodes that comprise the CMOS APS is required. In this work, we developed the analytical model that can calculate the photocurrent generated in CMOS photodiode comprising CMOS APSs. The photocurrent calculations and photo response simulations with respect to the wavelength of the incident photon were performed using this model for four types of photodiodes that can be fabricated in standard CMOS process. n + /p - sub and n + /p - epi/p - sub photodiode show better performance compared to n - well/p - sub and n - well/p - epi/p - sub due to the wider depletion width. Comparing n + /p - sub and n + /p - epi/p - sub photodiode, n + /p - sub has higher photo-responsivity in longer wavelength because of the higher electron diffusion current

  7. Pin-ups: pictures that fascinate and seduce Pin-ups: fotografias que encantam e seduzem

    Directory of Open Access Journals (Sweden)

    Maria Irene Pellegrino de Oliveira Souza

    2010-08-01

    Full Text Available Starting from photography studies, social anthropology and body visual, this article approaches the social construction of the feminine image through times. It narrates the history of erotic pinups photography and its fetishist elements. Pin-ups have aroused in the end of 19tcentury and it represents the free spirit of women. Slowly, it provokes the breakup of sensuality and sexuality feminine traditionalism. The article also discusses women’s sensuality as a desire object. The pin-ups sensual demure – with a mystery atmosphere – stimulated the eroticism at the beginning of the 20 century and, until nowadays, it provokes admiration, sigh and desire. Com base em estudos sobre fotografia, antropologia social e visual do corpo, este artigo aborda a imagem feminina socialmente construída através dos tempos. Narra o histórico da fotografia erótica de pin-ups e seus elementos fetichistas. As pin-ups surgiram no final do século XIX e representaram o espírito “livre” das mulheres. Sutilmente, incitavam o rompimento do tradicionalismo da época quanto à sensualidade e sexualidade feminina. O artigo aborda também a sensualidade feminina como objeto de desejo. O recato sensual das pin-ups – com ar de mistério – alavancou o erotismo no início do século XX e, até os dias atuais, provoca admiração, suspiros e desejos.

  8. The Egyptian Hair Pin: practical, sacred, fatal

    Directory of Open Access Journals (Sweden)

    Joann Fletcher

    2016-11-01

    Full Text Available Generally regarded as little more than a mundane tool employed in daily life, the humble hairpin occasionally played a rather more prominent role in history than has perhaps been appreciated. As the most ancient implements associated with hair styling, simple pins of bone and ivory were commonly employed in Egypt by c.4000 BC as a means of securing long hair in an upswept style (e.g. Petrie and Mace 1901, 21, 34. Although their occasional use by men undermines the assumption that hairpins are 'a relatively certain example of a “gendered” artefact' (Wilfong 1997, 67, the vast majority have been found in female burials. They can be made of bone and ivory, wood, steatite, glass, gold, silver and bronze, and two 12cm long bronze examples were found within the hair of Princess Ahmosi c.1550 BC (Fletcher 1995, 376, 441 while the hair of an anonymous woman at Gurob c.AD 110 had been secured in a bun with pins of bone, tortoiseshell and silver (Walker and Bierbrier 1997, 209.

  9. BARS - a heterogeneous code for 3D pin-by-pin LWR steady-state and transient calculation

    International Nuclear Information System (INIS)

    Avvakumov, A.V.; Malofeev, V.M.

    2000-01-01

    A 3D pin-by-pin dynamic model for LWR detailed calculation was developed. The model is based on a coupling of the BARS neutronic code with the RELAP5/MOD3.2 thermal hydraulic code. This model is intended to calculate a fuel cycle, a xenon transient, and a wide range of reactivity initiated accidents in a WWER and a PWR. Galanin-Feinberg heterogeneous method was realized in the BARS code. Some results for a validation of the heterogeneous method are presented for reactivity coefficients, a pin-by-pin power distribution, and a fast pulse transient. (Authors)

  10. Microstructural and mechanical behaviors of nano-SiC-reinforced AA7075-O FSW joints prepared through two passes

    Energy Technology Data Exchange (ETDEWEB)

    Bahrami, Mohsen, E-mail: Mohsen.bahrami@aut.ac.ir [Faculty of Mining and Materials Engineering, Amirkabir University of Technology (AUT), Hafez Aveenue, Tehran (Iran, Islamic Republic of); Farahmand Nikoo, Mohsen [Faculty of Mining and Materials Engineering, Amirkabir University of Technology (AUT), Hafez Aveenue, Tehran (Iran, Islamic Republic of); Besharati Givi, Mohammad Kazem [Department of Mechanical Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)

    2015-02-25

    In this paper, a threaded tapered pin tool was employed to fabricate a 2-pass friction stir welded (FSWed) joint. To investigate the benefits of nano-sized SiC particles on microstructural and mechanical properties of the joint, the experiment was repeated while SiC particles had been inserted along the joint line. In another joint, a square pin tool was applied in the second pass to evaluate the effectiveness of switching pin geometry between passes on the aforementioned properties. Microstructural features including grain size, second phase particles and reinforcement distribution were examined via optical and scanning electron microscopy (SEM) techniques. In addition to satisfactory connections between SiC particles and the matrix, the most homogenous particles distribution was observed in the specimen FSWed with both pin tools. This observation was further supported by atomic force microscopy (AFM) examination. Additionally, the foregoing joint demonstrated the maximum tensile strength which was synonymous with its smallest grain size. During tensile testing, SiC-free joint and SiC-reinforced ones fractured from stir zone (SZ) and base metal, respectively. Moreover, SiC-free joint showed necking phenomenon. SEM results showed that the SiC-reinforced specimens possessed ductile fracture morphologies. On the other hand, SiC-free specimen showed a quasi-cleavage fracture mode confirming its moderate percent elongation. In the meantime, SiC-reinforced specimens exhibited superior hardness level to SiC-free specimen.

  11. SI Notes.

    Science.gov (United States)

    Nelson, Robert A.

    1983-01-01

    Discusses legislation related to SI (International Systems of Units) in the United States. Indicates that although SI metric units have been officially recognized by law in the United States, U.S. Customary Units have never received a statutory basis. (JN)

  12. Si-based optical I/O for optical memory interface

    Science.gov (United States)

    Ha, Kyoungho; Shin, Dongjae; Byun, Hyunil; Cho, Kwansik; Na, Kyoungwon; Ji, Hochul; Pyo, Junghyung; Hong, Seokyong; Lee, Kwanghyun; Lee, Beomseok; Shin, Yong-hwack; Kim, Junghye; Kim, Seong-gu; Joe, Insung; Suh, Sungdong; Choi, Sanghoon; Han, Sangdeok; Park, Yoondong; Choi, Hanmei; Kuh, Bongjin; Kim, Kichul; Choi, Jinwoo; Park, Sujin; Kim, Hyeunsu; Kim, Kiho; Choi, Jinyong; Lee, Hyunjoo; Yang, Sujin; Park, Sungho; Lee, Minwoo; Cho, Minchang; Kim, Saebyeol; Jeong, Taejin; Hyun, Seokhun; Cho, Cheongryong; Kim, Jeong-kyoum; Yoon, Hong-gu; Nam, Jeongsik; Kwon, Hyukjoon; Lee, Hocheol; Choi, Junghwan; Jang, Sungjin; Choi, Joosun; Chung, Chilhee

    2012-01-01

    Optical interconnects may provide solutions to the capacity-bandwidth trade-off of recent memory interface systems. For cost-effective optical memory interfaces, Samsung Electronics has been developing silicon photonics platforms on memory-compatible bulk-Si 300-mm wafers. The waveguide of 0.6 dB/mm propagation loss, vertical grating coupler of 2.7 dB coupling loss, modulator of 10 Gbps speed, and Ge/Si photodiode of 12.5 Gbps bandwidth have been achieved on the bulk-Si platform. 2x6.4 Gbps electrical driver circuits have been also fabricated using a CMOS process.

  13. Effect of swift heavy Kr ions on complex permittivity of silicon PIN diode

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yun [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Su, Ping, E-mail: pingsu@scu.edu.cn [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Yang, Zhimei; Ma, Yao [Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Gong, Min, E-mail: mgong@scu.edu.cn [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China)

    2016-12-01

    Highlights: • The complex permittivity has been studied on Si PIN irradiated by heavy Kr ions. • DLTS was used to investigate damages formed in PIN diode during irradiation. • The recombination of carriers has important influence on the complex permittivity. - Abstract: The complex permittivity has been researched on silicon PIN diodes irradiated by 2150 MeV heavy Kr ions in this article. The difference of complex permittivity spectra from 1 to 10^7 Hz between irradiated and unirradiated were observed and discussed. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured at room temperature (300 K) to study the change of electrical properties in diode after irradiation. Deep level transient spectroscopy (DLTS) was used to investigate damages caused by 2150 MeV heavy Kr ions in diode. Two extra electron traps were observed, which were located at E{sub C}-0.31 eV and E{sub C}-0.17 eV. It indicated that new defects have been formed in PIN diode during irradiation. A comparison of the results illustrated that not only the carrier density but also the recombination of electron-hole pair have important influences on the properties of complex permittivity. These results offer a further indication of the mechanism about the complex permittivity property of semiconductor device, which could help to make the applications for the semiconductor device controlled by electric signals come true in the fields of optoelectronic integrated circuits, plasma antenna and so on.

  14. Gamma and Proton-Induced Dark Current Degradation of 5T CMOS Pinned Photodiode 0.18 mu{m} CMOS Image Sensors

    Science.gov (United States)

    Martin, E.; Nuns, T.; David, J.-P.; Gilard, O.; Vaillant, J.; Fereyre, P.; Prevost, V.; Boutillier, M.

    2014-02-01

    The radiation tolerance of a 0.18 μm technology CMOS commercial image sensor has been evaluated with Co60 and proton irradiations. The effects of protons on the hot pixels and dynamic bias and duty cycle conditions during gamma irradiations are studied.

  15. Behaviour of large-area avalanche photodiodes under intense magnetic fields for VUV- visible- and X-ray photon detection

    International Nuclear Information System (INIS)

    Fernandes, L.M.P.; Antognini, A.; Boucher, M.; Conde, C.A.N.; Huot, O.; Knowles, P.; Kottmann, F.; Ludhova, L.; Mulhauser, F.; Pohl, R.; Schaller, L.A.; Santos, J.M.F. dos; Taqqu, D.; Veloso, J.F.C.A.

    2003-01-01

    The behaviour of large-area avalanche photodiodes for X-rays, visible and vacuum-ultra-violet (VUV) light detection in magnetic fields up to 5 T is described. For X-rays and visible light detection, the photodiode pulse amplitude and energy resolution were unaffected from 0 to 5 T, demonstrating the insensitivity of this type of detector to strong magnetic fields. For VUV light detection, however, the photodiode relative pulse amplitude decreases with increasing magnetic field intensity reaching a reduction of about 24% at 5 T, and the energy resolution degrades noticeably with increasing magnetic field

  16. Simultaneous three-dimensional tracking of individual signals from multi-trap optical tweezers using fast and accurate photodiode detection.

    Science.gov (United States)

    Ott, Dino; Nader, S; Reihani, S; Oddershede, Lene B

    2014-09-22

    Multiple-beam optical traps facilitate advanced trapping geometries and exciting discoveries. However, the increased manipulation capabilities come at the price of more challenging position and force detection. Due to unrivaled bandwidth and resolution, photodiode based detection is preferred over camera based detection in most single/dual-beam optical traps assays. However, it has not been trivial to implement photodiode based detection for multiple-beam optical traps. Here, we present a simple and efficient method based on spatial filtering for parallel photodiode detection of multiple traps. The technique enables fast and accurate 3D force and distance detection of multiple objects simultaneously manipulated by multiple-beam optical tweezers.

  17. Optical fuel pin scanner. [Patent application; for reading identifications

    Science.gov (United States)

    Kirchner, T.L.; Powers, H.G.

    1980-12-09

    This patent relates to an optical identification system developed for post-irradiation disassembly and analysis of fuel bundle assemblies. The apparatus is designed to be lowered onto a stationary fuel pin to read identification numbers or letters imprinted on the circumference of the top fuel pin and cap. (DLC)

  18. Percutaneous pin fixation of Gartland Type III supraconylar fractures ...

    African Journals Online (AJOL)

    The remaining three (7.5%) had poor results due to varus deformity that neededcorrective surgery. One case of pin tract infection was recorded. The average hospital stay was 1.2 days. The study confirmed that percutaneous pin fixation is an effective, minimally invasive and safe method of fixation of these difficult fractures ...

  19. Pinning Stabilizes Neighboring Surface Nanobubbles against Ostwald Ripening

    NARCIS (Netherlands)

    Dollet, B.; Lohse, Detlef

    2016-01-01

    Pinning of the contact line and gas oversaturation explain the stability of single surface nanobubbles. In this article, we theoretically show that the pinning also suppresses the Ostwald ripening process between neighboring surface nanobubbles, thus explaining why in a population of neighboring

  20. 21 CFR 872.3740 - Retentive and splinting pin.

    Science.gov (United States)

    2010-04-01

    ...) MEDICAL DEVICES DENTAL DEVICES Prosthetic Devices § 872.3740 Retentive and splinting pin. (a) Identification. A retentive and splinting pin is a device made of austenitic alloys or alloys containing 75 percent or greater gold and metals of the platinum group intended to be placed permanently in a tooth to...

  1. Analysis of photoconductive mechanisms of organic-on-inorganic photodiodes

    Science.gov (United States)

    Ocaya, R. O.; Dere, A.; Al-Sehemi, Abdullah G.; Al-Ghamdi, Ahmed A.; Soylu, M.; Yakuphanoglu, F.

    2017-09-01

    In this work, it is shown that choosing an organic-on-inorganic Schottky diode for photoconductive sensing by a using a power law exponent (PLE or γ) determined at a single bias point is a limited approach. The standard literature approach does not highlight any bias voltage effects on the distribution of interface state density and other operationally important parameters. In this paper we suggest a new empirical method that holistically highlights the variation of γ with voltage, irradiance and temperature to reach a more informed choice of photosensor for real applications. We obtain a simple, plausible relation of the variation of barrier height, Φ, with voltage, irradiance and temperature. The method is evaluated with data collected previously for Schottky diodes of structure Al/p-Si/organic-semiconductor (OSC)/Au, where OSC is Coumarin-doped with graphene oxide (GO), Cobalt Phthacyanine (CoPC) doped with GO or PCBM doped with GO, respectively. The method reproduces published data for the three diodes reported at specific bias and provides for the first time some qualitative evidence of barrier height variation with light intensity, for which a possible physical basis is also given. Typically, Schottky barrier height is characterized using dark current leading to an under reporting of the effect of illumination on barrier height. Finally, since recombination mechanisms are gauged on the basis of the magnitude of PLE, the method facilitates the identification of the recombination mechanism at a given bias.

  2. In vitro analysis of self-shearing retentive pins.

    Science.gov (United States)

    Collard, E W; Caputo, A A; Standlee, J P; Duncanson, M G

    1981-02-01

    Combining stress, analysis, microscopic examination, mechanical testing of the shear mechanism, and retention of the Reten Pin leads to the following conclusions: 1. The suggested 0.006 inch pin-channel mismatch induces high lateral and apical stresses. Microscopically, this was seen to correlate with injury to the dentin. 2. The degree of retention was increased by using a smaller pin-channel mismatch. This correlates with smaller stresses and reduced dentinal damage. 3. The shear mechanism acts in a uniform manner, with a relatively small variation from the mean. It is suggested that for the best results the manufacturer should supply larger twist drills and pins with a somewhat deeper self-shearing groove to minimize apical involvement during shearing of the handle from the pin.

  3. Retrievable fuel pin end member for a nuclear reactor

    International Nuclear Information System (INIS)

    Rosa, J.M.

    1982-01-01

    A bottom end member on a retrievable fuel pin secures the pin within a nuclear reactor by engaging on a transverse attachment rail with a spring clip type of action. Removal and reinstallation if facilitated as only axial movement of the fuel pin is required for either operation. A pair of resilient axially extending blades are spaced apart to define a slot having a seat region which receives the rail and having a land region, closer to the tips of the blades which is normally of less width than the rail. Thus an axially directed force sufficient to wedge the resilient blades apart is required to emplace or release the fuel pin such force being greater than the axial forces on the fuel pins which occur during operation of the reactor

  4. Análisis de desempeño de conmutadores de microondas serie - paralelo diseñados con diodos p-i-n de diferentes materiales semiconductores

    Directory of Open Access Journals (Sweden)

    Gabriela Leija Hernández

    2011-01-01

    Full Text Available Se presenta un análisis del desempeño de conmutadores de señales microondas tipos serie y paralelo con base en diodos p-i-n de diferentes materiales semiconductores. Los materiales analizados son Si, GaAs, SiC, GaN, InP y GaSb. El conmutador tipo serie diseñado con diodos p-i-n de GaSb, GaAs, Si y GaN-ZB alcanza menores valores de pérdidas de inserción con respecto a diodos de otros materiales. Se percibe una diferencia de 0,2dB aproximadamente entre las respuestas de pérdida de inserción utilizando diodos de GaSb y SiC6H. Las respuestas más óptimas de aislamiento para frecuencias menores a 10 GHz se logra con conmutadores diseñados con diodos p-i-n de SiC y GaN. El conmutador de tipo paralelo diseñado con diodos p-i-n en base a GaN alcanza menores valores de pérdida de inserción respecto a diodos de otros materiales. Se perciben 0,2 dB aproximadamente de diferencia de pérdida de inserción entre las respuestas con diodos p-i-n de GaN y Si, en la frecuencia de 40 GHz, y una diferencia de 0,4 dB en la frecuencia de 60 GHz. Diodos p-i-n diseñados con GaN son los recomendados para el diseño de dispositivos conmutadores tipo paralelo.

  5. Restricted-access al-mediated material transport in al contacting of PureGaB Ge-on-Si p + n Diodes

    NARCIS (Netherlands)

    Sammak, A.; Qi, L.; Nanver, L.K.

    2015-01-01

    The effectiveness of using nanometer-thin boron (PureB) layers as interdiffusion barrier to aluminum (Al) is studied for a contacting scheme specifically developed for fabricating germanium-on-silicon (Ge-on-Si) p+n photodiodes with an oxide-covered light entrance window. Contacting is achieved at

  6. Proof-of-concept and feasibility demonstrations for an avalanche photodiode/photoelastic modulator-based imaging polarimeter

    Data.gov (United States)

    National Aeronautics and Space Administration — Building on the successful heritage of JPL’s Multiangle SpectroPolarimetric Imager (MSPI), we propose infusing HgCdTe avalanche photodiode (APD) array technology...

  7. GaN-based, low-voltage avalanche photodiodes for robust and compact UV imagers, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This Phase I SBIR program is directed toward the development of a novel low-voltage (~10V) AlGaN-based multi-quantum well (MQW) avalanche photodiode (APD) on...

  8. A pinning puzzle: two similar, non-superconducting chemical deposits in YBCO-one pins, the other does not

    Energy Technology Data Exchange (ETDEWEB)

    Sawh, Ravi-Persad; Weinstein, Roy; Gandini, Alberto; Skorpenske, Harley; Parks, Drew, E-mail: Weinstein@uh.ed [Beam Particle Dynamics Laboratories, University of Houston, Houston, TX 77204-5005 (United States); Department of Physics, University of Houston, Houston, TX 77204-5005 (United States); Texas Center for Superconductivity at UH, University of Houston, Houston, TX 77204-5002 (United States)

    2009-09-15

    The pinning effects of two kinds of U-rich deposits in YBCO (YBa{sub 2}Cu{sub 3}O{sub 7-{delta}}) are compared. One is a five-element compound, (U{sub 0.6}Pt{sub 0.4})YBa{sub 2}O{sub 6}, which is a paramagnetic double perovskite which forms as profuse stable nanosize deposits, and pins very well. The other is a four-element compound, (U{sub 0.4}Y{sub 0.6})BaO{sub 3}, which is a ferromagnetic single perovskite which forms as profuse stable nanosize deposits and pins very weakly or not at all. The pinning comparison is done with nearly equal deposit sizes and number of deposits per unit volume for the two compounds. Evidence for the pinning capability, chemical makeup, x-ray diffraction signature, and magnetic properties of the two compounds is reported.

  9. Setting best practice criteria for self-differencing avalanche photodiodes in quantum key distribution

    Science.gov (United States)

    Koehler-Sidki, Alexander; Dynes, James F.; Lucamarini, Marco; Roberts, George L.; Sharpe, Andrew W.; Savory, Seb J.; Yuan, Zhiliang; Shields, Andrew J.

    2017-10-01

    In recent years, the security of avalanche photodiodes as single photon detectors for quantum key distribution has been subjected to much scrutiny. The most prominent example of this surrounds the vulnerability of such devices to blinding under strong illumination. We focus on self-differencing avalanche photodiodes, single photon detectors that have demonstrated count rates exceeding 1 GCounts/s resulting in secure key rates over 1 MBit/s. These detectors use a passive electronic circuit to cancel any periodic signals thereby enhancing detection sensitivity. However this intrinsic feature can be exploited by adversaries to gain control of the devices using illumination of a moderate intensity. Through careful experimental examinations, we define here a set of criteria for these detectors to avoid such attacks.

  10. Application of avalanche photodiodes as a readout for scintillator tile-fiber systems

    CERN Document Server

    Cheshkov, C V; Gouchtchine, E; Litov, L; Mandjoukov, I; Spassov, V

    1999-01-01

    The application of reach-through avalanche photodiodes (R'APD) as a photodetector for scintillator tiles has been investigated. The light collected by WLS fibers (0.84mm and 1mm diameter) embedded in the scintillator has been transmited to the 0.5mm2 active surface of APD by clear optical fibers and optical connectors. A low noise charge sensitive preamplifier (approximately 400 electrons equivalent noise charge) has been used to gain the photodiode signal. Various configurations of tile-fibre systems, suitable for CMS and LHCb experiments at LHC have been studied using cosmic muons and muon beam at SPS at CERN. In order to optimize the performance of APD, measurments in the temperature range from -10C to +25C have been done. The MIP detection efficiency and electron/MIP separation have been estimated in order to determine applicability of the readout for LHCb preshower.

  11. Surface passivation of GaInAsSb photodiodes with thioacetamide

    Energy Technology Data Exchange (ETDEWEB)

    Salesse, A.; Joullie, A.; Chevrier, F.; Cuminal, Y.; Ferblantier, G.; Christol, P. [Institut d' Electronique du Sud (IES-CEM2), UMR CNRS 5507, Case 067, Universite Montpellier 2, 34 095 Montpellier Cedex 05 (France); Calas, P. [UMR CNRS 5073 CHIMIE, Case 017, Universite Montpellier 2, 34 095 Montpellier Cedex 05 (France); Nieto, J. [Instituto de Investigacion en Comunicacion Optica (IICO), Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, San Luis Potosi (Mexico)

    2007-04-15

    AlGaAsSb/GaInAsSb heterojunction mesa photodiodes having 2.2 {mu}m cutoff wavelength, grown by MBE on (p) GaSb substrates, have been passivated using thioacetamide CH{sub 4}CSNH{sub 2} and ammonium sulphide (NH{sub 4}){sub 2}S. Superior characteristics were obtained from devices processed with thioacetamide in acid medium (pH=2.4). At room temperature the surface leakage currents were suppressed, and the photodiodes showed R{sub 0}A product as high as 16 {omega}cm{sup 2} and detectivity D{sup *}(2 {mu}m,0 V){proportional_to}10{sup 10} cmHz{sup 1/2}W{sup -1}. A model explaining sulfuration mechanisms with thioacetamide and (NH{sub 4}){sub 2}S is proposed. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. LWIR HgCdTe barrier photodiode with Auger-suppression

    Science.gov (United States)

    Kopytko, M.; Kębłowski, A.; Gawron, W.; Pusz, W.

    2016-03-01

    This paper reports on advanced metalorganic chemical vapor deposition (MOCVD) grown HgCdTe barrier photodiodes for long wave infrared (LWIR) application. The n+p+Bp πN+ device is a concept of a specific barrier bandgap architecture integrated with Auger-suppression as a good solution for high operating temperature (HOT) infrared detectors with high detectivity and sub-nanosecond time constant. The design approach, growth aspects and detector characterization of HgCdTe n+p+Bp πN+ barrier photodiodes operated with thermoelectric cooling (230 K) have been discussed in the paper. The influence of absorber thickness on the device’s properties has been analyzed in the experiment.

  13. Feasibility study of photodiodes utilization in the soil-moisture determination by gamma transmission

    International Nuclear Information System (INIS)

    Santos, L.A.P. dos.

    1992-08-01

    This study was done to verify the viability of photodiodes, as gamma radiation detector ( 241 Am - Energy=60 KeV), to measure soil water content. The photodiodes used had different mechanical and electrical characteristics, and were tested on soils of different textures. A good linear correlation between the logarithm of the attenuation factor and soil-moisture demonstrated such viability, and that the low photopeak efficiency of these devices is not a limitation to the measurement of soil water content. Furthermore, the stability, the portability, and low cost of such semiconductor devices, including its electronic system, represent relevant characteristics that may justify the development of a reliable gamma meter system for field studies. (author). 37 refs, 21 figs, 20 tabs

  14. Modified Single Photo-diode (MSPD) Detection Technique for SAC-OCDMA System

    Science.gov (United States)

    Abdulqader, Sarah G.; Fadhil, Hilal A.; Aljunid, S. A.

    2015-03-01

    In this paper, a new detection technique called modified single photo-diode (MSPD) detection for SAC-OCDMA system is proposed. The proposed system based on the single photo-diode (SPD) detection technique. The new detection technique is proposed to overcome the limitation of phase-induced intensity noise (PIIN) in SPD detection technique. However, the proposed detection is based on an optical hard limiter (OHL) followed by a SPD and a low-pass filter (LPF) in order to suppress the phase intensity noise (PIIN) at the receiver side. The results show that the MSPD detection based on OHL has a good performance even when the transmission distance is long, which is different from the case of SPD detection technique. Therefore, the MSPD detection technique is shown to be effective to improve the bit error rate (BER<10-9) and to suppress the noise in the practical optical fiber network.

  15. Electrical properties and degradation behavior of hydrogenated amorphous Si alloys for solar cells

    Science.gov (United States)

    Krühler, W.; Kusian, W.; Karg, F.; Pfleiderer, H.

    1986-12-01

    The electrical properties and the degradation behavior of hydrogenated amorphous silicon alloys (a-Si1- x A x : H, with A=C, Ge, B, P) in designs of pin, pip, nin, and MOS structures are investigated by measuring the dark and light I(V) characteristics and the spectral response as well as the space-charge-limited current (SCLC), the time of flight (TOF) of carriers and the field effect (FE). These investigations give an overview of our recent work combined with new results emphasizing the physics of the a-Si:H pin solar cells. We discuss the stabilizing influence on the degradation behavior achieved by profiling the i layers of the pin solar cells with P and B. Two kinds of pin solar cells, namely glass/SnO2/p(C)in/metal and glass/metal/pin/ITO, are investigated and an explanation of their different spectral response behavior is given. SCLC measurements lead to the conclusion that trapping is also involved in the degradation mechanism, as is recombination. TOF experiments on a-Si1- x Ge x : H pin diodes indicate that the incorporation of Ge widens the tail-state distribution below the conduction band. FE measurements showed densities of gap states of about 5×l016cm-3eV-1.

  16. X-ray spectrometry with Peltier-cooled large area avalanche photodiodes

    International Nuclear Information System (INIS)

    Fernandes, L.M.P.; Lopes, J.A.M.; Santos, J.M.F. dos; Conde, C.A.N.

    2004-01-01

    Performance characteristics of the response of a Peltier-cooled large-area avalanche photodiode are investigated. Detector gain, energy linearity, energy resolution and minimum detectable energy are studied at different operation temperatures. Detector energy resolution and lowest detectable X-ray energy present a strong improvement as the operation temperature is reduced from 25 to 15 deg. C and slower improvements are achieved for temperatures below 10 deg. C

  17. Comparison between Conventional OCDMA and Subcarrier Multiplexing SAC OCDMA System Based on Single Photodiode Detection

    OpenAIRE

    Ahmad N. A. A; Junita M. N; Aljunid Syed Alwi; Che Beson Mohd Rashidi; Endut Rosdisham

    2017-01-01

    This paper demonstrates the comparison between conventional OCDMA system and subcarrier multiplexing (SCM) SAC-OCDMA system by applying Recursive Combinatorial (RC) code based on single photodiode detection (SPD). SPD is used in the receiver part to reduce the effect of multiple access interference (MAI) which contributes as a dominant noise in incoherent SAC-OCDMA systems. From this analysis, the performance of SCM OCDMA network could be improved by using lower data rates and higher received...

  18. A Single-Chip Solar Energy Harvesting IC Using Integrated Photodiodes for Biomedical Implant Applications.

    Science.gov (United States)

    Chen, Zhiyuan; Law, Man-Kay; Mak, Pui-In; Martins, Rui P

    2017-02-01

    In this paper, an ultra-compact single-chip solar energy harvesting IC using on-chip solar cell for biomedical implant applications is presented. By employing an on-chip charge pump with parallel connected photodiodes, a 3.5 × efficiency improvement can be achieved when compared with the conventional stacked photodiode approach to boost the harvested voltage while preserving a single-chip solution. A photodiode-assisted dual startup circuit (PDSC) is also proposed to improve the area efficiency and increase the startup speed by 77%. By employing an auxiliary charge pump (AQP) using zero threshold voltage (ZVT) devices in parallel with the main charge pump, a low startup voltage of 0.25 V is obtained while minimizing the reversion loss. A 4 V in gate drive voltage is utilized to reduce the conduction loss. Systematic charge pump and solar cell area optimization is also introduced to improve the energy harvesting efficiency. The proposed system is implemented in a standard 0.18- [Formula: see text] CMOS technology and occupies an active area of 1.54 [Formula: see text]. Measurement results show that the on-chip charge pump can achieve a maximum efficiency of 67%. With an incident power of 1.22 [Formula: see text] from a halogen light source, the proposed energy harvesting IC can deliver an output power of 1.65 [Formula: see text] at 64% charge pump efficiency. The chip prototype is also verified using in-vitro experiment.

  19. Bio-inspired nano-photodiode for Low Light, High Resolution and crosstalk-free CMOS image sensing

    KAUST Repository

    Saffih, Faycal

    2011-05-01

    Previous attempts have been devoted to mimic biological vision intelligence at the architectural system level. In this paper, a novel imitation of biological visual system intelligence is suggested, at the device level with the introduction of novel photodiode morphology. The proposed bio-inspired nanorod photodiode puts the depletion region length on the path of the incident photon instead of on its width, as the case is with the planar photodiodes. The depletion region has a revolving volume to increase the photodiode responsivity, and thus its photosensitivity. In addition, it can virtually boost the pixel fill factor (FF) above the 100% classical limit due to decoupling of its vertical sensing area from its limited planar circuitry area. Furthermore, the suggested nanorod photodiode photosensitivity is analytically proven to be higher than that of the planar photodiode. We also show semi-empirically that the responsivity of the suggested device varies linearly with its height; this important feature has been confirmed using Sentaurus simulation. The proposed nano-photorod is believed to meet the increasingly stringent High-Resolution-Low-Light (HRLL) detection requirements of the camera-phone and biomedical imaging markets. © 2011 IEEE.

  20. Performance of a PET detector module utilizing an array of silicon photodiodes to identify the crystal of interaction

    International Nuclear Information System (INIS)

    Moses, W.W.; Derenzo, S.E.; Nutt, R.; Digby, W.M.; Williams, C.W.; Andreaco, M.

    1993-01-01

    The authors initial performance results for a new multi-layer PET detector module consisting of an array of 3 mm square by 30 mm deep BGO crystals coupled on one end to a single photomultiplier tube and on the opposite end to an array of 3 mm square silicon photodiodes. The photomultiplier tube provides an accurate timing pulse and energy discrimination for all the crystals in the module, while the silicon photodiodes identify the crystal of interaction. When a single BGO crystal at +25 C is excited with 511 keV photons, the authors measure a photodiode signal centered at 700 electrons (e - ) with noise of 375 e - fwhm. When a four crystal/photodiode module is excited with a collimated line source of 511 keV photons, the crystal of interaction is correctly identified 82% of the time. The misidentification rate can be greatly reduced and an 8 x 8 crystal/photodiode module constructed by using thicker depletion layer photodiodes or cooling to 0 C

  1. Roles of pinning strength and density in vortex melting

    International Nuclear Information System (INIS)

    Obaidat, I M; Khawaja, U Al; Benkraouda, M

    2008-01-01

    We have investigated the role of pinning strength and density on the equilibrium vortex-lattice to vortex-liquid phase transition under several applied magnetic fields. This study was conducted using a series of molecular dynamic simulations on several samples with different strengths and densities of pinning sites which are arranged in periodic square arrays. We have found a single solid-liquid vortex transition when the vortex filling factor n>1. We have found that, for fixed pinning densities and strengths, the melting temperature, T m , decreases almost linearly with increasing magnetic field. Our results provide direct numerical evidence for the significant role of both the strength and density of pinning centers on the position of the melting line. We have found that the vortex-lattice to vortex-liquid melting line shifts up as the pinning strength or the pinning density was increased. The effect on the melting line was found to be more pronounced at small values of strength and density of pinning sites

  2. Loss of Pin1 Suppresses Hedgehog-Driven Medulloblastoma Tumorigenesis

    Directory of Open Access Journals (Sweden)

    Tao Xu

    2017-03-01

    Full Text Available Medulloblastoma is the most common malignant brain tumor in children. Therapeutic approaches to medulloblastoma (combination of surgery, radiotherapy, and chemotherapy have led to significant improvements, but these are achieved at a high cost to quality of life. Alternative therapeutic approaches are needed. Genetic mutations leading to the activation of the Hedgehog pathway drive tumorigenesis in ~30% of medulloblastoma. In a yeast two-hybrid proteomic screen, we discovered a novel interaction between GLI1, a key transcription factor for the mediation of Hedgehog signals, and PIN1, a peptidylprolyl cis/trans isomerase that regulates the postphosphorylation fate of its targets. The GLI1/PIN1 interaction was validated by reciprocal pulldowns using epitope-tagged proteins in HEK293T cells as well as by co-immunoprecipiations of the endogenous proteins in a medulloblastoma cell line. Our results support a molecular model in which PIN1 promotes GLI1 protein abundance, thus contributing to the positive regulation of Hedgehog signals. Most importantly, in vivo functional analyses of Pin1 in the GFAP-tTA;TRE-SmoA1 mouse model of Hedgehog-driven medulloblastoma demonstrate that the loss of Pin1 impairs tumor development and dramatically increases survival. In summary, the discovery of the GLI1/PIN1 interaction uncovers PIN1 as a novel therapeutic target in Hedgehog-driven medulloblastoma tumorigenesis.

  3. Discovery of novel selenium derivatives as Pin1 inhibitors by high-throughput screening

    Energy Technology Data Exchange (ETDEWEB)

    Subedi, Amit [Chemical Biology Research Group, RIKEN Center for Sustainable Resource Science, Wako, Saitama, 351-0198 (Japan); Graduate School of Science and Engineering, Saitama University, Saitama, 338-8570 (Japan); Shimizu, Takeshi [Chemical Biology Research Group, RIKEN Center for Sustainable Resource Science, Wako, Saitama, 351-0198 (Japan); Ryo, Akihide [Department of Microbiology, Yokohama City University School of Medicine, Yokohama, Kanagawa, 236-0004 (Japan); Sanada, Emiko [Bio-Active Compounds Discovery Unit, RIKEN Center for Sustainable Resource Science, Wako, Saitama, 351-0198 (Japan); Watanabe, Nobumoto [Chemical Biology Research Group, RIKEN Center for Sustainable Resource Science, Wako, Saitama, 351-0198 (Japan); Bio-Active Compounds Discovery Unit, RIKEN Center for Sustainable Resource Science, Wako, Saitama, 351-0198 (Japan); Osada, Hiroyuki, E-mail: hisyo@riken.jp [Chemical Biology Research Group, RIKEN Center for Sustainable Resource Science, Wako, Saitama, 351-0198 (Japan); Graduate School of Science and Engineering, Saitama University, Saitama, 338-8570 (Japan)

    2016-06-03

    Peptidyl prolyl cis/trans isomerization by Pin1 regulates various oncogenic signals during cancer progression, and its inhibition through multiple approaches has established Pin1 as a therapeutic target. However, lack of simplified screening systems has limited the discovery of potent Pin1 inhibitors. We utilized phosphorylation-dependent binding of Pin1 to its specific substrate to develop a screening system for Pin1 inhibitors. Using this system, we screened a chemical library, and identified a novel selenium derivative as Pin1 inhibitor. Based on structure-activity guided chemical synthesis, we developed more potent Pin1 inhibitors that inhibited cancer cell proliferation. -- Highlights: •Novel screening for Pin1 inhibitors based on Pin1 binding is developed. •A novel selenium compound is discovered as Pin1 inhibitor. •Activity guided chemical synthesis of selenium derivatives resulted potent Pin1 inhibitors.

  4. Inverse crystallization if Abrikosov vortex system at periodic pinning

    CERN Document Server

    Zyubin, M V; Kashurnikov, V A

    2002-01-01

    The vortex system in the quasi-two-dimensional HTSC plate is considered in the case of the periodic pinning. The M(H) magnetization curves by various values of the external magnetic field and different temperatures are calculated through the Monte Carlo method. It is shown that in the case of the periodic pinning the crystallization of the vortex system is possible by the temperature increase. A number of peculiarities conditioned by the impact of the pinning centers periodic lattice are identified on the magnetization curves. The pictures of the vortex distribution corresponding to various points on the M(H) curve are obtained

  5. Cladding dimensional changes in mixed oxide fuel pins

    International Nuclear Information System (INIS)

    Makenas, B.J.; Jost, J.W.; Hales, J.W.

    1980-01-01

    Several types of stainless steel (304, 316, 316-20% Cold Worked, and 316 Titanium stabilized 20% CW) have been used as cladding for mixed oxide (U, Pu)O 2 fuel pins irradiated in EBR-II. All of the materials have performed satisfactorily in their respective experimental subassemblies but significant differences in swelling and inelastic strain behavior have been found at high fast fluences among the different materials and among different heats of the same material. Cladding diameter increases were measured for 622 developmental and FFTF reference design fuel pins which were irradiated in 19 experimental subassemblies. Fuel pin diameters were determined from multiangle axial trace profilometry measurements

  6. Fabrication of oxide dispersion strengthened ferritic clad fuel pins

    International Nuclear Information System (INIS)

    Zirker, L.R.; Bottcher, J.H.; Shikakura, S.; Tsai, C.L.

    1991-01-01

    A resistance butt welding procedure was developed and qualified for joining ferritic fuel pin cladding to end caps. The cladding are INCO MA957 and PNC ODS lots 63DSA and 1DK1, ferritic stainless steels strengthened by oxide dispersion, while the end caps are HT9 a martensitic stainless steel. With adequate parameter control the weld is formed without a residual melt phase and its strength approaches that of the cladding. This welding process required a new design for fuel pin end cap and weld joint. Summaries of the development, characterization, and fabrication processes are given for these fuel pins. 13 refs., 6 figs., 1 tab

  7. Fuel pin design algorithm for conceptual design studies

    International Nuclear Information System (INIS)

    Uselman, J.P.

    1979-01-01

    Two models are available which are currently verified by part of the requirements and which are adaptable as algorithms for the complete range. Fuel thermal performance is described by the HEDL SIEX model. Cladding damage and total deformation are determined by the GE GRO-II structural analysis code. A preliminary fuel pin performance model for analysis of (U, P/sub U/)O 2 pins in the COROPT core conceptual design system has been constructed by combining the key elements of SIEX and GRO-II. This memo describes the resulting pin performance model and its interfacing with COROPT system. Some exemplary results are presented

  8. Self-organized critical behavior in pinned flux lattices

    International Nuclear Information System (INIS)

    Pla, O.; Nori, F.

    1991-01-01

    We study the response of pinned fluxed lattices, under small perturbations in the driving force, below and close to the pinning-depinning transition. For driving Lorentz forces below F c (the depinning force at which the whole flux lattice slides), the system has instabilities against small force increases, with a power-law distribution characteristic of self-organized criticality. Specifically, D(d)∼d -1,3 , where d is the displacement of a flux line after a very small force increase. We also study the initial stages of the motion of the lattice once the driving force overcomes the pinning forces

  9. Minimizing optical losses in monolithic perovskite/c-Si tandem solar cells with a flat top cell

    NARCIS (Netherlands)

    Santbergen, R.; Mishima, Ryoto; Meguro, Tomomi; Hino, Masashi; Uzu, Hisashi; Blanker, A.J.; Yamamoto, Kenji; Zeman, M.

    2016-01-01

    <p>In a monolithic perovskite/c-Si tandem device, the perovskite top cell has to be deposited onto a flat c-Si bottom cell without anti-reflective front side texture, to avoid fabrication issues. We use optical simulations to analyze the reflection losses that this induces. We then systematically

  10. Rectified photocurrent in a planar ITO/graphene/ITO photodetector on SiC by local irradiation of ultraviolet light

    Science.gov (United States)

    Yang, Junwei; Guo, Liwei; Huang, Jiao; Mao, Qi; Guo, Yunlong; Jia, Yuping; Peng, Tonghua; Chen, Xiaolong

    2017-10-01

    A rectified photocurrent behaviour is demonstrated in a simple planar structure of ITO-graphene-ITO formed on a SiC substrate when an ultraviolet (UV) light is locally incident on one of the edges between the graphene and ITO electrode. The photocurrent has similar characteristics as those of a vertical structure graphene/semiconductor junction photodiode, but is clearly different from those found in a planar structure metal-graphene-metal device. Furthermore, the device behaves multi-functionally as a photodiode with sensitive UV photodetection capability (responsivity of 11.7 mA W-1 at 0.3 V) and a self-powered UV photodetector (responsivity of 4.4 mA W-1 at zero bias). Both features are operative in a wide dynamic range and with a fast speed of response in about gigahertz. The linear I-V behaviour with laser power at forward bias and cutoff at reverse bias leads to a conceptual photodiode, which is compatible with modern semiconductor planar device architecture. This paves a potential way to realize ultrafast graphene planar photodiodes for monolithic integration of graphene-based devices on the same SiC substrate.

  11. Superconducting vortex pinning with artificial magnetic nanostructures.

    Energy Technology Data Exchange (ETDEWEB)

    Velez, M.; Martin, J. I.; Villegas, J. E.; Hoffmann, A.; Gonzalez, E. M.; Vicent, J. L.; Schuller, I. K.; Univ. de Oviedo-CINN; Unite Mixte de Physique CNRS/Thales; Univ. Paris-Sud; Univ.Complutense de Madrid; Univ. California at San Diego

    2008-11-01

    This review is dedicated to summarizing the recent research on vortex dynamics and pinning effects in superconducting films with artificial magnetic structures. The fabrication of hybrid superconducting/magnetic systems is presented together with the wide variety of properties that arise from the interaction between the superconducting vortex lattice and the artificial magnetic nanostructures. Specifically, we review the role that the most important parameters in the vortex dynamics of films with regular array of dots play. In particular, we discuss the phenomena that appear when the symmetry of a regular dot array is distorted from regularity towards complete disorder including rectangular, asymmetric, and aperiodic arrays. The interesting phenomena that appear include vortex-lattice reconfigurations, anisotropic dynamics, channeling, and guided motion as well as ratchet effects. The different regimes are summarized in a phase diagram indicating the transitions that take place as the characteristic distances of the array are modified respect to the superconducting coherence length. Future directions are sketched out indicating the vast open area of research in this field.

  12. Ideal glass transitions by random pinning

    Science.gov (United States)

    Cammarota, Chiara; Biroli, Giulio

    2012-01-01

    We study the effect of freezing the positions of a fraction c of particles from an equilibrium configuration of a supercooled liquid at a temperature T. We show that within the random first-order transition theory pinning particles leads to an ideal glass transition for a critical fraction c = cK(T) even for moderate supercooling; e.g., close to the Mode-Coupling transition temperature. First we derive the phase diagram in the T - c plane by mean field approximations. Then, by applying a real-space renormalization group method, we obtain the critical properties for |c - cK(T)| → 0, in particular the divergence of length and time scales, which are dominated by two zero-temperature fixed points. We also show that for c = cK(T) the typical distance between frozen particles is related to the static point-to-set length scale of the unconstrained liquid. We discuss what are the main differences when particles are frozen in other geometries and not from an equilibrium configuration. Finally, we explain why the glass transition induced by freezing particles provides a new and very promising avenue of research to probe the glassy state and ascertain, or disprove, the validity of the theories of the glass transition. PMID:22623524

  13. A PWR Thorium Pin Cell Burnup Benchmark

    Energy Technology Data Exchange (ETDEWEB)

    Weaver, Kevan Dean; Zhao, X.; Pilat, E. E; Hejzlar, P.

    2000-05-01

    As part of work to evaluate the potential benefits of using thorium in LWR fuel, a thorium fueled benchmark comparison was made in this study between state-of-the-art codes, MOCUP (MCNP4B + ORIGEN2), and CASMO-4 for burnup calculations. The MOCUP runs were done individually at MIT and INEEL, using the same model but with some differences in techniques and cross section libraries. Eigenvalue and isotope concentrations were compared on a PWR pin cell model up to high burnup. The eigenvalue comparison as a function of burnup is good: the maximum difference is within 2% and the average absolute difference less than 1%. The isotope concentration comparisons are better than a set of MOX fuel benchmarks and comparable to a set of uranium fuel benchmarks reported in the literature. The actinide and fission product data sources used in the MOCUP burnup calculations for a typical thorium fuel are documented. Reasons for code vs code differences are analyzed and discussed.

  14. Critical currents in quasiperiodic pinning arrays: chains and Penrose lattices.

    Science.gov (United States)

    Misko, Vyacheslav; Savel'ev, Sergey; Nori, Franco

    2005-10-21

    We study the critical depinning current Jc versus the applied magnetic flux Phi, for quasiperiodic (QP) chains and 2D arrays of pinning centers placed on the nodes of a fivefold Penrose lattice. In QP chains, the peaks in Jc(Phi) are determined by a sequence of harmonics of the long and short segments of the chain. The critical current Jc(Phi) has a remarkable self-similarity. In 2D QP pinning arrays, we predict analytically and numerically the main features of Jc(Phi), and demonstrate that the Penrose lattice of pinning sites provides an enormous enhancement of Jc(Phi), even compared to triangular and random pinning site arrays. This huge increase in Jc(Phi) could be useful for applications.

  15. PIN architecture for ultrasensitive organic thin film photoconductors.

    Science.gov (United States)

    Jin, Zhiwen; Wang, Jizheng

    2014-06-17

    Organic thin film photoconductors (OTFPs) are expected to have wide applications in the field of optical communications, artificial vision and biomedical sensing due to their great advantages of high flexibility and low-cost large-area fabrication. However, their performances are not satisfactory at present: the value of responsivity (R), the parameter that measures the sensitivity of a photoconductor to light, is below 1 AW(-1). We believe such poor performance is resulted from an intrinsic self-limited effect of present bare blend based device structure. Here we designed a PIN architecture for OTFPs, the PIN device exhibits a significantly improved high R value of 96.5 AW(-1). The PIN architecture and the performance the PIN device shows here should represent an important step in the development of OTFPs.

  16. PIN architecture for ultrasensitive organic thin film photoconductors

    Science.gov (United States)

    Jin, Zhiwen; Wang, Jizheng

    2014-01-01

    Organic thin film photoconductors (OTFPs) are expected to have wide applications in the field of optical communications, artificial vision and biomedical sensing due to their great advantages of high flexibility and low-cost large-area fabrication. However, their performances are not satisfactory at present: the value of responsivity (R), the parameter that measures the sensitivity of a photoconductor to light, is below 1 AW−1. We believe such poor performance is resulted from an intrinsic self-limited effect of present bare blend based device structure. Here we designed a PIN architecture for OTFPs, the PIN device exhibits a significantly improved high R value of 96.5 AW−1. The PIN architecture and the performance the PIN device shows here should represent an important step in the development of OTFPs. PMID:24936952

  17. Resonant pinning spectroscopy with spin-vortex pairs

    Science.gov (United States)

    Holmgren, E.; Bondarenko, A.; Ivanov, B. A.; Korenivski, V.

    2018-03-01

    Vortex pairs in magnetic nanopillars with strongly coupled cores and pinning of one of the cores by a morphological defect, are used to perform resonant pinning spectroscopy, in which a microwave excitation applied to the nanopillar produces pinning or depinning of the cores only when the excitation is in resonance with the rotational or gyrational eigenmodes of the specific initial state of the core-core pair. The shift in the eigenmode frequencies between the pinned and depinned states is determined experimentally and explained theoretically, and illustrates the potential for multicore spin-vortex memory with resonant writing of information onto various stable vortex pair states. Further, it is shown how the same resonant spectroscopy techniques applied to a vortex pair can be used as a sensitive nanoscale probe for characterizing morphological defects in magnetic films.

  18. Close Proximity Robotic Maneuvering through Flux Pinning Manipulation

    Data.gov (United States)

    National Aeronautics and Space Administration — Non-contacting actuation technology like flux pinning has never been demonstrated in space. The development of a nonphysical joint is critical for maneuvers such as...

  19. Danish calculations of the NEACRP pin-power benchmark

    International Nuclear Information System (INIS)

    Hoejerup, C.F.

    1994-01-01

    This report describes calculations performed for the NEACRP pin-power benchmark. The calculations are made with the code NEM2D, a diffusion theory code based on the nodal expansion method. (au) (15 tabs., 15 ills., 5 refs.)

  20. Pin Worm Survey on Infant School Children in Gunma Prefecture

    OpenAIRE

    佐藤, 久美子; 阿部, 美幸; 伊藤, 恵美; 金田, 聡子; 関口, 直美; 深町, 容子; 松渕, ユカ子; 柳, 博美; 鈴木, 守

    1991-01-01

    Pin worms (Enterobius vermicularis) are the commonest intestinal parasite in Japan. Examination of this worm infection is usually made by microscopic observation on the swab taken on a scothch tape. We conducted a survey of pin worm infection among infant school children of 4-6 years old. Suitable days for swab examination were studied by comparing the detection rate according to the consecutive days tested. Results were summarized as follows: 1. Three hundred sixteen children (172 boys and 1...

  1. Domain Walls in Helical Magnets: Elasticity and Pinning

    OpenAIRE

    Nattermann, Thomas

    2012-01-01

    Recently completely new types of domain walls (DWs) have been discovered in helical magnets, consisting generically of a regular array of {\\it pairs} of magnetic vortex lines \\cite{Li+12}. Only for special orientations DWs are free of vortices. In this article we calculate their elastic and pinning properties, using the pitch angle $\\theta$ as a small parameter. In particular we show that vortex free DWs exhibit long range elasticity which makes them very stiff and suppresses their pinning by...

  2. AtPIN: Arabidopsis thaliana Protein Interaction Network

    Directory of Open Access Journals (Sweden)

    Silva-Filho Marcio C

    2009-12-01

    Full Text Available Abstract Background Protein-protein interactions (PPIs constitute one of the most crucial conditions to sustain life in living organisms. To study PPI in Arabidopsis thaliana we have developed AtPIN, a database and web interface for searching and building interaction networks based on publicly available protein-protein interaction datasets. Description All interactions were divided into experimentally demonstrated or predicted. The PPIs in the AtPIN database present a cellular compartment classification (C3 which divides the PPI into 4 classes according to its interaction evidence and subcellular localization. It has been shown in the literature that a pair of genuine interacting proteins are generally expected to have a common cellular role and proteins that have common interaction partners have a high chance of sharing a common function. In AtPIN, due to its integrative profile, the reliability index for a reported PPI can be postulated in terms of the proportion of interaction partners that two proteins have in common. For this, we implement the Functional Similarity Weight (FSW calculation for all first level interactions present in AtPIN database. In order to identify target proteins of cytosolic glutamyl-tRNA synthetase (Cyt-gluRS (AT5G26710 we combined two approaches, AtPIN search and yeast two-hybrid screening. Interestingly, the proteins glutamine synthetase (AT5G35630, a disease resistance protein (AT3G50950 and a zinc finger protein (AT5G24930, which has been predicted as target proteins for Cyt-gluRS by AtPIN, were also detected in the experimental screening. Conclusions AtPIN is a friendly and easy-to-use tool that aggregates information on Arabidopsis thaliana PPIs, ontology, and sub-cellular localization, and might be a useful and reliable strategy to map protein-protein interactions in Arabidopsis. AtPIN can be accessed at http://bioinfo.esalq.usp.br/atpin.

  3. Behavior of a bundle of fast fuel pins under irradiation

    International Nuclear Information System (INIS)

    Marbach, G.; Millet, P.; Robert, J.; Languille, A.

    1979-01-01

    In the French design of fuel elements for fast reactors, great deformation of pins can bring about interaction with the hexagonal tube through the spacer wires. The change in such bundles is described here when the diameter of the cladding increases and the outcome of this reaction (bending and ovalization of pins) is calculated with a simplified model. It is shown that the results achieved agree well with the experimental observations [fr

  4. Pin and roller attachment system for ceramic blades

    Science.gov (United States)

    Shaffer, J.E.

    1995-07-25

    In a turbine, a plurality of blades are attached to a turbine wheel by way of a plurality of joints which form a rolling contact between the blades and the turbine wheel. Each joint includes a pin and a pair of rollers to provide rolling contact between the pin and an adjacent pair of blades. Because of this rolling contact, high stress scuffing between the blades and the turbine wheel reduced, thereby inhibiting catastrophic failure of the blade joints. 3 figs.

  5. Theory of activated glassy dynamics in randomly pinned fluids

    Science.gov (United States)

    Phan, Anh D.; Schweizer, Kenneth S.

    2018-02-01

    We generalize the force-level, microscopic, Nonlinear Langevin Equation (NLE) theory and its elastically collective generalization [elastically collective nonlinear Langevin equation (ECNLE) theory] of activated dynamics in bulk spherical particle liquids to address the influence of random particle pinning on structural relaxation. The simplest neutral confinement model is analyzed for hard spheres where there is no change of the equilibrium pair structure upon particle pinning. As the pinned fraction grows, cage scale dynamical constraints are intensified in a manner that increases with density. This results in the mobile particles becoming more transiently localized, with increases of the jump distance, cage scale barrier, and NLE theory mean hopping time; subtle changes of the dynamic shear modulus are predicted. The results are contrasted with recent simulations. Similarities in relaxation behavior are identified in the dynamic precursor regime, including a roughly exponential, or weakly supra-exponential, growth of the alpha time with pinning fraction and a reduction of dynamic fragility. However, the increase of the alpha time with pinning predicted by the local NLE theory is too small and severely so at very high volume fractions. The strong deviations are argued to be due to the longer range collective elasticity aspect of the problem which is expected to be modified by random pinning in a complex manner. A qualitative physical scenario is offered for how the three distinct aspects that quantify the elastic barrier may change with pinning. ECNLE theory calculations of the alpha time are then presented based on the simplest effective-medium-like treatment for how random pinning modifies the elastic barrier. The results appear to be consistent with most, but not all, trends seen in recent simulations. Key open problems are discussed with regard to both theory and simulation.

  6. Comparative study of various pixel photodiodes for digital radiography: Junction structure, corner shape and noble window opening

    Science.gov (United States)

    Kang, Dong-Uk; Cho, Minsik; Lee, Dae Hee; Yoo, Hyunjun; Kim, Myung Soo; Bae, Jun Hyung; Kim, Hyoungtaek; Kim, Jongyul; Kim, Hyunduk; Cho, Gyuseong

    2012-05-01

    Recently, large-size 3-transistors (3-Tr) active pixel complementary metal-oxide silicon (CMOS) image sensors have been being used for medium-size digital X-ray radiography, such as dental computed tomography (CT), mammography and nondestructive testing (NDT) for consumer products. We designed and fabricated 50 µm × 50 µm 3-Tr test pixels having a pixel photodiode with various structures and shapes by using the TSMC 0.25-m standard CMOS process to compare their optical characteristics. The pixel photodiode output was continuously sampled while a test pixel was continuously illuminated by using 550-nm light at a constant intensity. The measurement was repeated 300 times for each test pixel to obtain reliable results on the mean and the variance of the pixel output at each sampling time. The sampling rate was 50 kHz, and the reset period was 200 msec. To estimate the conversion gain, we used the mean-variance method. From the measured results, the n-well/p-substrate photodiode, among 3 photodiode structures available in a standard CMOS process, showed the best performance at a low illumination equivalent to the typical X-ray signal range. The quantum efficiencies of the n+/p-well, n-well/p-substrate, and n+/p-substrate photodiodes were 18.5%, 62.1%, and 51.5%, respectively. From a comparison of pixels with rounded and rectangular corners, we found that a rounded corner structure could reduce the dark current in large-size pixels. A pixel with four rounded corners showed a reduced dark current of about 200fA compared to a pixel with four rectangular corners in our pixel sample size. Photodiodes with round p-implant openings showed about 5% higher dark current, but about 34% higher sensitivities, than the conventional photodiodes.

  7. Comparative study of various pixel photodiodes for digital radiography: junction structure, corner shape and noble window opening

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Dong-Uk; Cho, Min-Sik; Lee, Dae-Hee; Yoo, Hyun-Jun; Kim, Myung-Soo; Bae, Jun-Hyung; Kim, Hyoung-Taek; Kim, Jong-Yul; Kim, Hyun-Duk; Cho, Gyu-Seong [Korea Advanced Institute of Science and Technology, Daejeon (Korea, Republic of)

    2012-05-15

    Recently, large-size 3-transistors (3-Tr) active pixel complementary metal-oxide silicon (CMOS) image sensors have been being used for medium-size digital X-ray radiography, such as dental computed tomography (CT), mammography and nondestructive testing (NDT) for consumer products. We designed and fabricated 50 μm x 50 μm 3-Tr test pixels having a pixel photodiode with various structures and shapes by using the TSMC 0.25-m standard CMOS process to compare their optical characteristics. The pixel photodiode output was continuously sampled while a test pixel was continuously illuminated by using 550-nm light at a constant intensity. The measurement was repeated 300 times for each test pixel to obtain reliable results on the mean and the variance of the pixel output at each sampling time. The sampling rate was 50 kHz, and the reset period was 200 msec. To estimate the conversion gain, we used the mean-variance method. From the measured results, the n-well/p-substrate photodiode, among 3 photodiode structures available in a standard CMOS process, showed the best performance at a low illumination equivalent to the typical X-ray signal range. The quantum efficiencies of the n+/p-well, n-well/p-substrate, and n+/p-substrate photodiodes were 18.5%, 62.1%, and 51.5%, respectively. From a comparison of pixels with rounded and rectangular corners, we found that a rounded corner structure could reduce the dark current in large-size pixels. A pixel with four rounded corners showed a reduced dark current of about 200 fA compared to a pixel with four rectangular corners in our pixel sample size. Photodiodes with round p-implant openings showed about 5% higher dark current, but about 34% higher sensitivities, than the conventional photodiodes.

  8. Comparative study of various pixel photodiodes for digital radiography: junction structure, corner shape and noble window opening

    International Nuclear Information System (INIS)

    Kang, Dong-Uk; Cho, Min-Sik; Lee, Dae-Hee; Yoo, Hyun-Jun; Kim, Myung-Soo; Bae, Jun-Hyung; Kim, Hyoung-Taek; Kim, Jong-Yul; Kim, Hyun-Duk; Cho, Gyu-Seong

    2012-01-01

    Recently, large-size 3-transistors (3-Tr) active pixel complementary metal-oxide silicon (CMOS) image sensors have been being used for medium-size digital X-ray radiography, such as dental computed tomography (CT), mammography and nondestructive testing (NDT) for consumer products. We designed and fabricated 50 μm x 50 μm 3-Tr test pixels having a pixel photodiode with various structures and shapes by using the TSMC 0.25-m standard CMOS process to compare their optical characteristics. The pixel photodiode output was continuously sampled while a test pixel was continuously illuminated by using 550-nm light at a constant intensity. The measurement was repeated 300 times for each test pixel to obtain reliable results on the mean and the variance of the pixel output at each sampling time. The sampling rate was 50 kHz, and the reset period was 200 msec. To estimate the conversion gain, we used the mean-variance method. From the measured results, the n-well/p-substrate photodiode, among 3 photodiode structures available in a standard CMOS process, showed the best performance at a low illumination equivalent to the typical X-ray signal range. The quantum efficiencies of the n+/p-well, n-well/p-substrate, and n+/p-substrate photodiodes were 18.5%, 62.1%, and 51.5%, respectively. From a comparison of pixels with rounded and rectangular corners, we found that a rounded corner structure could reduce the dark current in large-size pixels. A pixel with four rounded corners showed a reduced dark current of about 200 fA compared to a pixel with four rectangular corners in our pixel sample size. Photodiodes with round p-implant openings showed about 5% higher dark current, but about 34% higher sensitivities, than the conventional photodiodes.

  9. Pin tract infection after uniplanar external fixation of open fractures at ...

    African Journals Online (AJOL)

    Pin tract infection after uniplanar external fixation of open fractures at a national, teaching and referral hospital. ... Background: Pin tract infection is the most common complication of external fixation accounting for 43% of complications. The presence of a pin tract infection leads to subsequent pin loosening and fixation ...

  10. Pinned vorticity in rotating superfluids, with application to neutron stars

    International Nuclear Information System (INIS)

    Pines, D.; Shaham, J.; Alpar, M.A.; Anderson, P.W.

    1981-01-01

    The dynamic consequences of the existence of pinned vorticity in a rotating superfluid are studied by means of a simple model: the behavior of a rotating cylinder which contains a uniform region of either weakly or strongly pinned vorticity and which is being spun up or spun down by an external torque. It is shown that in the case of strong pinning, spin down can lead to periodic jumps (glitches) in the rotation frequency of the cylinder, followed by quasi-oscillatory relaxation, while in the case of weak pinning no glitches occur unless the cylinder is shaken so violently that vortices unpin. We conclude that the giant glitches and post-glitch behavior observed in the Vela pulsar may be explained by the sudden release of some 10% of the strongly pinned vortices in the neutron crust every few years as a result of pulsar spin down. We further suggest that the post-glitch behavior observed in the Crab pulsar can be explained if the macroglitches represent vorticity jumps induced by small starquakes in the weakly pinned vortex region expected in the crust of a young neutron star, and that the differences in ''glitch'' behavior of the Crab, Vela, and older pulsars may be explained on evolutionary grounds. (author)

  11. Vortex Avalanches with Periodic Arrays of Pinning Sites

    Science.gov (United States)

    Abbas, J.; Heckel, T.; Kakalios, J.

    2001-03-01

    Numerical simulations by Nori and co-workers of dynamical phase transitions for magnetic vortices in type II superconductors when the defects which act as pinning sites are arranged in a periodic array have found a dramatic non-linear relationship between vortex voltage and driving current.2,4 In order to experimentally test the predictions of these simulations, a macroscopic physical analog of an array of flux vortices in the presense of an ordered lattice of pinning sites has been constructed. This simple table-top experimental system consists of conventional household magnets, arranged in an ordered grid (serving as the lattice of fixed pinning centers). A plexiglass sheet is positioned above these fixed magnets, and another collection of magnets (representing the magnetic flux vortices), oriented so that they are attracted to the fixed magnets are placed on top of the sheet. The entire apparatus is then tilted to a given angle (the analog of the driving voltage) and the velocity of the avalanching magnets is recorded using the induced voltage in a pick-up coil. By varying the ratio of movable magnets to fixed pinning magnets, the filling fraction can be adjusted, as can the pinning strength, by adjusting the separation of the plexiglass sheet between the fixed and movable magnets. The velocity of the avalanching magnets as the filling fraction is varied displays a jamming transition, with a non-trivial dependence on the pinning strength of the lattice of fixed magnets below the sheet.

  12. Recent progress in the development of CsI(Tl) crystal-Si-photodiode spectrometric detection assemblies

    International Nuclear Information System (INIS)

    Semynozhenko, V.P.; Grinyov, B.V.; Nekrasov, V.V.; Borodenko, Yu.A.

    2005-01-01

    Highly sensitive spectrometric γ-detection assemblies are developed using a comprehensive approach (optimization of crystal growth conditions as well as of treatment and packing of scintillators, creation of low-noise charge-sensitive preamplifiers and shapers). The detection assemblies with CsI(Tl)≤100 cm 3 have a sensitivity of about 20 pulse/s(mcR/h), their energy resolution with respect to 137 Cs γ-line being ≤8.5%. The assemblies with lesser scintillator volumes (1-5 cm 3 ) provide a resolution lower than 6% with respect to 137 Cs and ≤40% with respect to 241 Am

  13. Interplay between collective pinning and artificial defects on domain wall propagation in Co/Pt multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez-Rodriguez, G; Hierro-Rodriguez, A; Perez-Junquera, A; Montenegro, N; Alameda, J M; Velez, M [Dept. Fisica, Universidad de Oviedo-CINN, 33007 Oviedo (Spain); Menendez, J L [Centro de Investigacion en Nanomateriales y Nanotecnologia (CINN). Principado de Asturias-Consejo Superior de Investigaciones Cientificas (CSIC)-Univ. Oviedo -UO, Parque Tecnologico de Asturias, 33428 Llanera (Spain); Ravelosona, D, E-mail: mvelez@uniovi.e [Institut d' Electronique Fondamentale, UMR CNRS 8622, Univ. Paris Sud, 91405 Orsay Cedex (France)

    2010-08-04

    The interplay between collective pinning on intrinsic structural defects and artificial pinning at a patterned hole is studied in magnetic multilayers with perpendicular anisotropy. The pinning strength of a patterned hole is measured through its efficiency to stop domain wall (DW) propagation into a consecutive unpatterned nanowire section (using antisymmetric magnetoresistance to detect the direction of DW propagation) whereas collective pinning is characterized by the field dependence of DW velocity. Close to room temperature, collective pinning becomes weaker than artificial pinning so that pinning at the hole compensates nucleation-pad geometry, blocking DW propagation across the nanowire.

  14. Interplay between collective pinning and artificial defects on domain wall propagation in Co/Pt multilayers

    International Nuclear Information System (INIS)

    Rodriguez-Rodriguez, G; Hierro-Rodriguez, A; Perez-Junquera, A; Montenegro, N; Alameda, J M; Velez, M; Menendez, J L; Ravelosona, D

    2010-01-01

    The interplay between collective pinning on intrinsic structural defects and artificial pinning at a patterned hole is studied in magnetic multilayers with perpendicular anisotropy. The pinning strength of a patterned hole is measured through its efficiency to stop domain wall (DW) propagation into a consecutive unpatterned nanowire section (using antisymmetric magnetoresistance to detect the direction of DW propagation) whereas collective pinning is characterized by the field dependence of DW velocity. Close to room temperature, collective pinning becomes weaker than artificial pinning so that pinning at the hole compensates nucleation-pad geometry, blocking DW propagation across the nanowire.

  15. Negative response of HgCdTe photodiode induced by nanosecond laser pulse

    Science.gov (United States)

    Xu, Zuodong; Zhang, Jianmin; Lin, Xinwei; Shao, Bibo; Yang, Pengling

    2017-05-01

    Photodetectors' behavior and mechanism of transient response are still not understood very well, especially under high photon injection. Most of the researches on this topic were carried out with ultra-short laser pulse, whose pulse width ranged from femtosecond scale to picosecond scale. However, in many applications the durations of incident light are in nanosecond order and the light intensities are strong. To investigate the transient response characteristics and mechanisms of narrow-bandgap photovoltaic detectors under short laser irradiation, we performed an experiment on HgCdTe photodiodes. The n+-on-p type HgCdTe photodiodes in the experiment were designed to work in spectrum from 1.0μm to 3.0μm, with conditions of zero bias and room temperature. They were exposed to in-band short laser pulses with dwell time of 20 nanosecond. When the intensity of incident laser beam rose to 0.1J/cm2 order, the photodiodes' response characteristics turned to be bipolar from unipolar. A much longer negative response with duration of about 10μs to 100μs followed the positive light response. The amplitude of the negative response increased with the laser intensity, while the dwell time of positive response decreased with the laser intensity. Considering the response characteristics and the device structure, it is proposed that the negative response was caused by space charge effect at the electrodes. Under intense laser irradiation, a temperature gradient formed in the HgCdTe material. Due to the temperature gradient, the majority carriers diffused away from upper surface and left space charge at the electrodes. Then negative response voltage could be measured in the external circuit. With higher incident laser intensity, the degree of the space charge effect would become higher, and then the negative response would come earlier and show larger amplitude.

  16. Linear array of photodiodes to track a human speaker for video recording

    Science.gov (United States)

    DeTone, D.; Neal, H.; Lougheed, R.

    2012-12-01

    Communication and collaboration using stored digital media has garnered more interest by many areas of business, government and education in recent years. This is due primarily to improvements in the quality of cameras and speed of computers. An advantage of digital media is that it can serve as an effective alternative when physical interaction is not possible. Video recordings that allow for viewers to discern a presenter's facial features, lips and hand motions are more effective than videos that do not. To attain this, one must maintain a video capture in which the speaker occupies a significant portion of the captured pixels. However, camera operators are costly, and often do an imperfect job of tracking presenters in unrehearsed situations. This creates motivation for a robust, automated system that directs a video camera to follow a presenter as he or she walks anywhere in the front of a lecture hall or large conference room. Such a system is presented. The system consists of a commercial, off-the-shelf pan/tilt/zoom (PTZ) color video camera, a necklace of infrared LEDs and a linear photodiode array detector. Electronic output from the photodiode array is processed to generate the location of the LED necklace, which is worn by a human speaker. The computer controls the video camera movements to record video of the speaker. The speaker's vertical position and depth are assumed to remain relatively constant- the video camera is sent only panning (horizontal) movement commands. The LED necklace is flashed at 70Hz at a 50% duty cycle to provide noise-filtering capability. The benefit to using a photodiode array versus a standard video camera is its higher frame rate (4kHz vs. 60Hz). The higher frame rate allows for the filtering of infrared noise such as sunlight and indoor lighting-a capability absent from other tracking technologies. The system has been tested in a large lecture hall and is shown to be effective.

  17. Linear array of photodiodes to track a human speaker for video recording

    International Nuclear Information System (INIS)

    DeTone, D; Neal, H; Lougheed, R

    2012-01-01

    Communication and collaboration using stored digital media has garnered more interest by many areas of business, government and education in recent years. This is due primarily to improvements in the quality of cameras and speed of computers. An advantage of digital media is that it can serve as an effective alternative when physical interaction is not possible. Video recordings that allow for viewers to discern a presenter's facial features, lips and hand motions are more effective than videos that do not. To attain this, one must maintain a video capture in which the speaker occupies a significant portion of the captured pixels. However, camera operators are costly, and often do an imperfect job of tracking presenters in unrehearsed situations. This creates motivation for a robust, automated system that directs a video camera to follow a presenter as he or she walks anywhere in the front of a lecture hall or large conference room. Such a system is presented. The system consists of a commercial, off-the-shelf pan/tilt/zoom (PTZ) color video camera, a necklace of infrared LEDs and a linear photodiode array detector. Electronic output from the photodiode array is processed to generate the location of the LED necklace, which is worn by a human speaker. The computer controls the video camera movements to record video of the speaker. The speaker's vertical position and depth are assumed to remain relatively constant– the video camera is sent only panning (horizontal) movement commands. The LED necklace is flashed at 70Hz at a 50% duty cycle to provide noise-filtering capability. The benefit to using a photodiode array versus a standard video camera is its higher frame rate (4kHz vs. 60Hz). The higher frame rate allows for the filtering of infrared noise such as sunlight and indoor lighting–a capability absent from other tracking technologies. The system has been tested in a large lecture hall and is shown to be effective.

  18. Characterization of image converter tubes and photodiodes in the infrared region

    International Nuclear Information System (INIS)

    Fleurot, N.; Nail, M.; Verrecchia, R.; Clement, G.

    1979-01-01

    The detection of near infrared picosecond luminous events is of the highest interest in the laser fusion research. The temporal profile of the 1.06 μm laser pulse, has to be carefully measured with S1 streak cameras which present limitations in the picosecond range. We have undertaken measurement on S1 photodiodes to situate their fatigue threshold and try to understand the limitations of image converter tubes we also present the work undertaken at R.T.C./L.E.P. to produce stable and highly sensitive image converter tubes in the micron range with the ''transfer sensitization method''. (author)

  19. Results from a test of a Cu-scintillator calorimeter module with photodiode readout

    International Nuclear Information System (INIS)

    Fischer, F.; Kiesling, C.; Lorenz, E.; Mageras, G.; Scholz, S.

    1986-05-01

    A calorimeter module of 17 radiation lengths depth has been built. Wavelength shifter (WLS) bars coupled to rectangular silicon photodiodes (PD's) are use as readout. Considerations in the design of the WLS bars, with particular emphasis on optimising the efficiency for PD readout, are discussed. The energy resolution for electrons has been determined to be about 9%/√E between 2 and 50 GeV. The response to hadrons is presented and the prospects for the construction of a full-sized hadron calorimeter are discussed. (orig.)

  20. Analysis of hybrid subcarrier multiplexing of OCDMA based on single photodiode detection

    Science.gov (United States)

    Ahmad, N. A. A.; Junita, M. N.; Aljunid, S. A.; Rashidi, C. B. M.; Endut, R.

    2017-11-01

    This paper analyzes the performance of subcarrier multiplexing (SCM) of spectral amplitude coding optical code multiple access (SAC-OCDMA) by applying Recursive Combinatorial (RC) code based on single photodiode detection (SPD). SPD is used in the receiver part to reduce the effect of multiple access interference (MAI) which contributes as a dominant noise in incoherent SAC-OCDMA systems. Results indicate that the SCM OCDMA network performance could be improved by using lower data rates and higher number of weight. Total number of users can also be enhanced by adding lower data rates and higher number of subcarriers.

  1. State-of-the-art performance of GaAlAs/GaAs avalanche photodiodes

    Science.gov (United States)

    Law, H. D.; Nakano, K.; Tomasetta, L. R.

    1979-01-01

    Ga(0.15)Al(0.85)As/GaAs avalanche photodiodes have been successfully fabricated. The performance of these detectors is characterized by a rise time of less than 35 ps, an external quantum efficiency with an antireflection coating of 95% at 0.53 microns, and a microwave optical gain of 42 dB. The dark current density is in the low range (10 to the minus A/sq cm) at one-half the breakdown voltages, and rises to 0.0001 A/sq cm at 42 dB optical gain.

  2. Space-qualified silicon avalanche-photodiode single-photon-counting modules

    Science.gov (United States)

    Sun, Xiaoli; Krainak, Michael A.; Abshire, James B.; Spinhirne, James D.; Trottier, Claude; Davies, Murray; Dautet, Henri; Allan, Graham R.; Lukemire, Alan T.; Vandiver, James C.

    2004-09-01

    A space-qualified silicon avalanche-photodiode (APD) based single-photon-counting-module (SPCM) was developed for the Geoscience Laser Altimeter System (GLAS) on board NASA's Ice, Cloud, and Land Elevation Satellite (ICESat). Numerous improvements were made over the commercially available SPCMs in both performance and reliability. The measured optoelectronic parameters include, 65% photon detection efficiency at the 532 nm wavelength, 15-17 mega-counts per second (Mcps) maximum count rate and less than 200 s-1 dark counts before exposure to space radiation.

  3. Determination of bixin and norbixin in meat using liquid chromatography and photodiode array detection.

    Science.gov (United States)

    Noppe, H; Abuin Martinez, S; Verheyden, K; Van Loco, J; Companyo Beltran, R; De Brabander, H F

    2009-01-01

    The development of an analytical method that enables routine analysis of annatto dye, specifically bixin and norbixin, in meat tissue is described. Liquid-solid extraction was carried out using acetonitrile. Analysis was by HPLC with photodiode array detection using two fixed wavelengths (458 and 486 nm). The possibilities of ion trap mass spectrometry (MS) were also assessed. Method performance characteristics, according to Commission Decision 2002/657/EC, were determined, with recoveries between 99 and 102% and calibration curves being linear in the 0.5-10 mg kg(-1) range. The limit of quantification was 0.5 mg kg(-1).

  4. Ge-Based Spin-Photodiodes for Room-Temperature Integrated Detection of Photon Helicity

    KAUST Repository

    Rinaldi, Christian

    2012-05-02

    Spin-photodiodes based on Fe/MgO/Ge(001) heterostructures are reported. These devices perform the room-temperature integrated electrical detection of the spin polarization of a photocurrent generated by circularly polarized photons with a wavelength of 1300 nm, for light pulses with intensity I 0 down to 200 μW. A forward and reverse-biased average photocurrent variation of 5.9% is measured for the complete reversal of the incident light helicity. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Analysis of hybrid subcarrier multiplexing of OCDMA based on single photodiode detection

    Directory of Open Access Journals (Sweden)

    Ahmad N. A. A

    2017-01-01

    Full Text Available This paper analyzes the performance of subcarrier multiplexing (SCM of spectral amplitude coding optical code multiple access (SAC-OCDMA by applying Recursive Combinatorial (RC code based on single photodiode detection (SPD. SPD is used in the receiver part to reduce the effect of multiple access interference (MAI which contributes as a dominant noise in incoherent SAC-OCDMA systems. Results indicate that the SCM OCDMA network performance could be improved by using lower data rates and higher number of weight. Total number of users can also be enhanced by adding lower data rates and higher number of subcarriers.

  6. High performance p-i-n CdTe and CdZnTe detectors

    CERN Document Server

    Khusainov, A K; Ilves, A G; Morozov, V F; Pustovoit, A K; Arlt, R D

    1999-01-01

    A breakthrough in the performance of p-i-n CdTe and CdZnTe detectors is reported. The detector stability has been significantly improved, allowing their use in precise gamma and XRF applications. Detectors with energy resolution close to Si and Ge were produced operating with only -30--35 deg. C cooling (by a Peltier cooler of 15x15x10 mm size and a consumed power less than 5 W). Presently detectors with volume of up to 300 mm sup 3 are available. In terms of photoelectric effect efficiency it corresponds to HPGe detectors with volumes of about 1.5 cm sup 3. The possibilities of further improvement of CdTe and CdZnTe detector characteristics are discussed in this paper.

  7. Standard test method for wear testing with a pin-on-disk apparatus

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2005-01-01

    1.1 This test method covers a laboratory procedure for determining the wear of materials during sliding using a pin-on-disk apparatus. Materials are tested in pairs under nominally non-abrasive conditions. The principal areas of experimental attention in using this type of apparatus to measure wear are described. The coefficient of friction may also be determined. 1.2 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard. 1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

  8. Standard test method for pin-type bearing test of metallic materials

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    1984-01-01

    1.1 This test method covers a pin-type bearing test of metallic materials to determine bearing yield strength and bearing strength. Note 1—The presence of incidental lubricants on the bearing surfaces may significantly lower the value of bearing yield strength obtained by this method. 1.2 Units—The values stated in inch-pound units are to be regarded as standard. The values given in parentheses are mathematical conversions to SI units that are provided for information only and are not considered standard. 1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

  9. GeSn p-i-n photodetector for all telecommunication bands detection.

    Science.gov (United States)

    Su, Shaojian; Cheng, Buwen; Xue, Chunlai; Wang, Wei; Cao, Quan; Xue, Haiyun; Hu, Weixuan; Zhang, Guangze; Zuo, Yuhua; Wang, Qiming

    2011-03-28

    Using a 820 nm-thick high-quality Ge0.97Sn0.03 alloy film grown on Si(001) by molecular beam epitaxy, GeSn p-i-n photodectectors have been fabricated. The detectors have relatively high responsivities, such as 0.52 A/W, 0.23 A/W, and 0.12 A/W at 1310 nm, 1540 nm, and 1640 nm, respectively, under a 1 V reverse bias. With a broad detection spectrum (800-1800 nm) covering the whole telecommunication windows and compatibility with conventional complementary metal-oxide-semiconductors (CMOS) technology, the GeSn devices are attractive for applications in both optical communications and optical interconnects.

  10. Trap assisted charge multiplication enhanced photoresponse of Li-P codoped p-ZnO/n-Si heterojunction ultraviolet photodetectors

    Science.gov (United States)

    Sharma, Pankaj; Bhardwaj, Ritesh; Kumar, Amitesh; Mukherjee, Shaibal

    2018-01-01

    In this work, we report a high-performance p-ZnO/n-Si heterojunction-based ultraviolet (UV) photodetector fabricated by dual ion beam sputter deposition. The lithium-phosphorus (Li-P) codoping route was used to realize low resistive and stable p-type ZnO. The current-voltage characteristics of p-ZnO/n-Si heterojunction photodiode showed good rectifying behavior with a rectification ratio of 170 at  ±3 V. The spectral response measurements of the photodiode showed excellent responsivity with a peak observed around ~325 nm and cutoff wavelength around 370 nm. The maximum responsivity achieved was 2.6 A W-1 at an applied reverse bias of  -6 V. The external quantum efficiency determined was of the order of ~1000% which is attributed to the trap assisted multiplication of charge carriers.

  11. SiC Optically Modulated Field-Effect Transistor

    Science.gov (United States)

    Tabib-Azar, Massood

    2009-01-01

    An optically modulated field-effect transistor (OFET) based on a silicon carbide junction field-effect transistor (JFET) is under study as, potentially, a prototype of devices that could be useful for detecting ultraviolet light. The SiC OFET is an experimental device that is one of several devices, including commercial and experimental photodiodes, that were initially evaluated as detectors of ultraviolet light from combustion and that could be incorporated into SiC integrated circuits to be designed to function as combustion sensors. The ultraviolet-detection sensitivity of the photodiodes was found to be less than desired, such that it would be necessary to process their outputs using high-gain amplification circuitry. On the other hand, in principle, the function of the OFET could be characterized as a combination of detection and amplification. In effect, its sensitivity could be considerably greater than that of a photodiode, such that the need for amplification external to the photodetector could be reduced or eliminated. The experimental SiC OFET was made by processes similar to JFET-fabrication processes developed at Glenn Research Center. The gate of the OFET is very long, wide, and thin, relative to the gates of typical prior SiC JFETs. Unlike in prior SiC FETs, the gate is almost completely transparent to near-ultraviolet and visible light. More specifically: The OFET includes a p+ gate layer less than 1/4 m thick, through which photons can be transported efficiently to the p+/p body interface. The gate is relatively long and wide (about 0.5 by 0.5 mm), such that holes generated at the body interface form a depletion layer that modulates the conductivity of the channel between the drain and the source. The exact physical mechanism of modulation of conductivity is a subject of continuing research. It is known that injection of minority charge carriers (in this case, holes) at the interface exerts a strong effect on the channel, resulting in amplification

  12. Temperature and frequency dependence of negative differential capacitance in a planar GaN-based p-i-n photodetector

    International Nuclear Information System (INIS)

    Bao, Xichang; Xu, Jintong; Li, Chao; Qiao, Hui; Zhang, Yan; Li, Xiangyang

    2013-01-01

    Highlights: •Planar GaN-based p-i-n photodetector was prepared by ion implantation. •A novel negative differential capacitance (NDC) effect is observed in the photodetector. •The NDC effect is due to the carrier confinement of the deep level centers formed by ion implantation. -- Abstract: In this work, back-illuminated planar GaN-based p-i-n photodetectors were fabricated by Si implantation into GaN-based p-i-n structure grown by metal–organic chemical vapor deposition (MOCVD). The dark current density of the photodetector is 1.03 nA/cm 2 under zero bias. The unbiased responsivity is 0.122 A/W at 360 nm, corresponding to an external quantum efficiency of 42%. Temperature and frequency dependence of capacitance versus voltage characteristics of the photodetectors are also investigated respectively. A novel negative differential capacitance (NDC) effect observed in the photodetector at room temperature under the frequency of 120 kHz or at low temperature under relative high frequency (such as 200 kHz). The NDC effect becomes much more obvious with the temperature or frequency decreased. This novel phenomenon is mainly due to the carrier confinement of the deep level centers in the detector, which mainly include lattice defects formed by high dose ion implantation and subsequent annealing

  13. Pin1 and neurodegeneration: a new player for prion disorders?

    Directory of Open Access Journals (Sweden)

    Elisa Isopi

    2015-07-01

    Full Text Available Pin1 is a peptidyl-prolyl isomerase that catalyzes the cis/trans conversion of phosphorylated proteins at serine or threonine residues which precede a proline. The peptidyl-prolyl isomerization induces a conformational change of the proteins involved in cell signaling process. Pin1 dysregulation has been associated with some neurodegenerative disorders such as Alzheimer's disease, Parkinson's disease and Huntington's disease. Proline-directed phosphorylation is a common regulator of these pathologies and a recent work showed that it is also involved in prion disorders. In fact, prion protein phosphorylation at the Ser-43-Pro motif induces prion protein conversion into a disease-associated form. Furthermore, phosphorylation at Ser-43-Pro has been observed to increase in the cerebral spinal fluid of sporadic Creutzfeldt-Jakob Disease patients. These findings provide new insights into the pathogenesis of prion disorders, suggesting Pin1 as a potential new player in the disease. In this paper, we review the mechanisms underlying Pin1 involvement in the aforementioned neurodegenerative pathologies focusing on the potential role of Pin1 in prion disorders.

  14. Cluster synchronization for directed community networks via pinning partial schemes

    International Nuclear Information System (INIS)

    Hu Cheng; Jiang Haijun

    2012-01-01

    Highlights: ► Cluster synchronization for directed community networks is proposed by pinning partial schemes. ► Each community is considered as a whole. ► Several novel pinning criteria are derived based on the information of communities. ► A numerical example with simulation is provided. - Abstract: In this paper, we focus on driving a class of directed networks to achieve cluster synchronization by pinning schemes. The desired cluster synchronization states are no longer decoupled orbits but a set of un-decoupled trajectories. Each community is considered as a whole and the synchronization criteria are derived based on the information of communities. Several pinning schemes including feedback control and adaptive strategy are proposed to select controlled communities by analyzing the information of each community such as indegrees and outdegrees. In all, this paper answers several challenging problems in pinning control of directed community networks: (1) What communities should be chosen as controlled candidates? (2) How many communities are needed to be controlled? (3) How large should the control gains be used in a given community network to achieve cluster synchronization? Finally, an example with numerical simulations is given to demonstrate the effectiveness of the theoretical results.

  15. Pin-Type Gas Cooled Reactor for Nuclear Electric Propulsion

    Science.gov (United States)

    Wright, Steven A.; Lipinski, Ronald J.

    2003-01-01

    This paper describes a point design for a pin-type Gas-Cooled Reactor concept that uses a fuel pin design similar to the SP100 fuel pin. The Gas-Cooled Reactor is designed to operate at 100 kWe for 7 years plus have a reduced power mode of 20% power for a duration of 5 years. The power system uses a gas-cooled, UN-fueled, pin-type reactor to heat He/Xe gas that flows directly into a recuperated Brayton system to produce electricity. Heat is rejected to space via a thermal radiator that unfolds in space. The reactor contains approximately 154 kg of 93.15 % enriched UN in 313 fuel pins. The fuel is clad with rhenium-lined Nb-1Zr. The pressures vessel and ducting are cooled by the 900 K He/Xe gas inlet flow or by thermal radiation. This permits all pressure boundaries to be made of superalloy metals rather than refractory metals, which greatly reduces the cost and development schedule required by the project. The reactor contains sufficient rhenium (a neutron poison) to make the reactor subcritical under water immersion accidents without the use of internal shutdown rods. The mass of the reactor and reflectors is about 750 kg.

  16. Generation of clusters in complex dynamical networks via pinning control

    International Nuclear Information System (INIS)

    Li Kezan; Fu Xinchu; Small, Michael

    2008-01-01

    Many real-world networks show community structure, i.e., groups (or clusters) of nodes that have a high density of links within them but with a lower density of links between them. In this paper, by applying feedback injections to a fraction of network nodes, various clusters are synchronized independently according to the community structure generated by the group partition of the network (cluster synchronization). This control is achieved by pinning (i.e. applying linear feedback control) to a subset of the network nodes. Those pinned nodes are selected not randomly but according to the topological structure of communities of a given network. Specifically, for a given group partition of a network, those nodes with direct connections between groups must be pinned in order to achieve cluster synchronization. Both the local stability and global stability of cluster synchronization are investigated. Taking the tree-shaped network and the most modular network as two particular examples, we illustrate in detail how the pinning strategy influences the generation of clusters. The simulations verify the efficiency of the pinning schemes used in this paper

  17. Performance of electrical contact pins near a nuclear explosion

    International Nuclear Information System (INIS)

    Ragan, C.E.; Silbert, M.G.; Ellis, A.N.; Robinson, E.E.; Daddario, M.J.

    1977-09-01

    The pressures attainable in equation-of-state studies using nuclear-explosion-driven shock waves greatly exceed those that can be reached in normal laboratory conditions. However, the diagnostic instrumentation must survive in the high-radiation environment present near such an explosion. Therefore, a set of experiments were fielded on the Redmud event to test the feasibility of using electrical contact pins in this environment. In these experiments a 60-cm-high shield of boron-lead was placed on the rack lid approximately 1 m from the device. A sample consisting of slabs of molybdenum and 238 U was placed on top of the shield, and twelve electrical contact pins were embedded to five different depths in the materials. Five different multiplexing-charging circuits were used for the pins, and a piezoelectric quartz gauge was placed on top of the uranium to obtain an estimate of the fission-energy deposition. All of the charged pins survived the radiation and produced signals indicating shock arrival. The uncertainty in determining the pin-closure time was approximately 3 ns. The signal from the quartz gauge corresponded to a pressure that was consistent with the calculated neutron fluence

  18. MICRO PIN ARRAY DETECTOR (MIPA): FIRST TEST RESULTS.

    Energy Technology Data Exchange (ETDEWEB)

    REHAK,P.; SMITH,G.C.; WARREN,J.B.; YU,B.

    1999-06-28

    A novel gas proportional detector, consisting of an array of pins immersed into a cathode made out of closely packed hexagonals has been developed. The resulting geometry of the detector is 3 dimensional. Electron multiplication is limited to a region in close proximity to the tip of each pin, where the electric field decreases with distance from the pin at a rate faster than 1/r, the rate that exists in a traditional wire chamber. The multiplication region is limited to a small part of the detector volume leading to stability of operation up to high charge gas gains. The amplification region is located far enough from any dielectric surface that the gas gain is insensitive to the charge state of the surface, a significant benefit compared with many other micro-pattern detectors. The microscopic dimensions of the individual pins of the array result in signals whose total duration is about a microsecond. Two identical, but opposite polarity signals are detected, one on the pin and one on the cathode. Both signals can be used by two independent, charge division, read-out systems to obtain unambiguous x-y position information of the primary ionization.

  19. MICRO PIN ARRAY DETECTOR (MIPA): FIRST TEST RESULTS.

    Energy Technology Data Exchange (ETDEWEB)

    REHAK,P.; SMITH,G.C.; WARREN,J.B.; YU,B.

    1999-06-28

    A novel gas proportional detector, consisting of an array of pins immersed into a cathode made out of closely packed hexagonals has been developed. The resulting geometry of the detector is 3 dimensional. Electron multiplication is limited to a region in close proximity to the tip of each pin, where the electric field decreases with distance from the pin at a rate faster than l/r, the rate that exists in a traditional wire chamber. The multiplication region is limited to a small part of the detector volume leading to stability of operation up to high charge gas gains. The amplification region is located far enough from any dielectric surface that the gas gain is insensitive to the charge state of the surface, a significant benefit compared with many other micro-pattern detectors. The microscopic dimensions of the individual pins of the array result in signals whose total duration is about a microsecond. Two identical, but opposite polarity signals are detected, one on the pin and one on the cathode. Both signals can be used by two independent, charge division, read-out systems to obtain unambiguous x-y position information of the primary ionization.

  20. Detectors for proton counting. Si-APD and scintillation detectors

    International Nuclear Information System (INIS)

    Kishimoto, Shunji

    2008-01-01

    Increased intensity of synchrotron radiation requests users to prepare photon pulse detectors having higher counting rates. As detectors for photon counting, silicon-avalanche photodiode (Si-APD) and scintillation detectors were chosen for the fifth series of detectors. Principle of photon detection by pulse and need of amplification function of the detector were described. Structure and working principle, high counting rate measurement system, bunch of electrons vs. counting rate, application example of NMR time spectroscopy measurement and comments for users were described for the Si-APD detector. Structure of scintillator and photomultiplier tube, characteristics of scintillator and performance of detector were shown for the NaI detector. Future development of photon pulse detectors was discussed. (T. Tanaka)

  1. Photon-counting monolithic avalanche photodiode arrays for the super collider

    International Nuclear Information System (INIS)

    Ishaque, A.N.; Castleberry, D.E.; Rougeot, H.M.

    1994-01-01

    In fiber tracking, calorimetry, and other high energy and nuclear physics experiments, the need arises to detect an optical signal consisting of a few photons (in some cases a single photoelectron) with a detector insensitive to magnetic fields. Previous attempts to detect a single photoelectron have involved avalanche photodiodes (APDs) operated in the Geiger mode, the visible light photon counter, and a photomultiplier tube with an APD as the anode. In this paper it is demonstrated that silicon APDs, biased below the breakdown voltage, can be used to detect a signal of a few photons with conventional pulse counting circuitry at room temperature. Moderate cooling, it is further argued, could make it possible to detect a single photoelectron. Monolithic arrays of silicon avalanche photodiodes fabricated by Radiation Monitoring Devices, Inc. (RMD) were evaluated for possible use in the Super Collider detector systems. Measurements on 3 element x 3 element (2 mm pitch) APD arrays, using pulse counting circuitry with a charge sensitive amplifier (CSA) and a Gaussian filter, are reported and found to conform to a simple noise model. The model is used to obtain the optimal operating point. Experimental results are described in Section II, modeling results in Section III, and the conclusions are summarized in Section IV

  2. Signal-to-noise ratio of single-pixel cameras based on photodiodes.

    Science.gov (United States)

    Jauregui-Sánchez, Y; Clemente, P; Latorre-Carmona, P; Tajahuerce, E; Lancis, J

    2018-03-01

    Single-pixel cameras have been successfully used in different imaging applications in the last years. One of the key elements affecting the quality of these cameras is the photodetector. Here, we develop a numerical model of a single-pixel camera, which takes into account not only the characteristics of the incident light but also the physical properties of the detector. In particular, our model considers the photocurrent, the dark current, the photocurrent shot noise, the dark-current shot noise, and the Johnson-Nyquist (thermal) noise of the photodiode used as a light detector. The model establishes a clear relationship between the electric signal and the quality of the final image. This allows us to perform a systematic study of the quality of the image obtained with single-pixel cameras in different contexts. In particular, we study the signal-to-noise ratio as a function of the optical power of the incident light, the wavelength, and the photodiode temperature. The results of the model are compared with those obtained experimentally with a single-pixel camera.

  3. Photodiode-based cutting interruption sensor for near-infrared lasers.

    Science.gov (United States)

    Adelmann, B; Schleier, M; Neumeier, B; Hellmann, R

    2016-03-01

    We report on a photodiode-based sensor system to detect cutting interruptions during laser cutting with a fiber laser. An InGaAs diode records the thermal radiation from the process zone with a ring mirror and optical filter arrangement mounted between a collimation unit and a cutting head. The photodiode current is digitalized with a sample rate of 20 kHz and filtered with a Chebyshev Type I filter. From the measured signal during the piercing, a threshold value is calculated. When the diode signal exceeds this threshold during cutting, a cutting interruption is indicated. This method is applied to sensor signals from cutting mild steel, stainless steel, and aluminum, as well as different material thicknesses and also laser flame cutting, showing the possibility to detect cutting interruptions in a broad variety of applications. In a series of 83 incomplete cuts, every cutting interruption is successfully detected (alpha error of 0%), while no cutting interruption is reported in 266 complete cuts (beta error of 0%). With this remarkable high detection rate and low error rate, the possibility to work with different materials and thicknesses in combination with the easy mounting of the sensor unit also to existing cutting machines highlight the enormous potential for this sensor system in industrial applications.

  4. CsI(Tl) with photodiodes for identifying subsurface radionuclide contamination

    International Nuclear Information System (INIS)

    Stromswold, D.C.; Meisner, J.E.; Nicaise, W.F.

    1994-10-01

    At the US Department of Energy's Hanford Site near Richland, Washington, underground radioactive contamination exists as the result of leaks, spills, and intentional disposal of waste products from plutonium-production operations. Characterizing these contaminants in preparation for environmental remediation is a major effort now in progress. In this paper, a cylindrical (15 x 61 mm) CsI(Tl) scintillation detector with two side-mounted photodiodes has been developed to collect spectral gamma-ray data in subsurface contaminated formations at the U.S. Department of Energy's Hanford Site. It operates inside small-diameter, thick-wall steel pipes pushed into the ground to depths up to 20 m by a cone penetrometer. The detector provides a rugged, efficient, magnetic-field-insensitive means for identifying gamma-ray-emitting contaminants (mainly 137 Cs and 60 Co). Mounting two 3 x 30-mm photodiodes end-to-end on a flat area along the detector's side provides efficient light collection over the length of the detector

  5. Light emitting diode, photodiode-based fluorescence detection system for DNA analysis with microchip electrophoresis.

    Science.gov (United States)

    Hall, Gordon H; Glerum, D Moira; Backhouse, Christopher J

    2016-02-01

    Electrophoretic separation of fluorescently end-labeled DNA after a PCR serves as a gold standard in genetic diagnostics. Because of their size and cost, instruments for this type of analysis have had limited market uptake, particularly for point-of-care applications. This might be changed through a higher level of system integration and lower instrument costs that can be realized through the use of LEDs for excitation and photodiodes for detection--if they provide sufficient sensitivity. Here, we demonstrate an optimized microchip electrophoresis instrument using polymeric fluidic chips with fluorescence detection of end-labeled DNA with a LOD of 0.15 nM of Alexa Fluor 532. This represents orders of magnitude improvement over previously reported instruments of this type. We demonstrate the system with an electrophoretic separation of two PCR products and their respective primers. We believe that this is the first LED-induced fluorescence microchip electrophoresis system with photodiode-based detection that could be used for standard applications of PCR and electrophoresis. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. An amorphous silicon photodiode with 2 THz gain-bandwidth product based on cycling excitation process

    Science.gov (United States)

    Yan, Lujiang; Yu, Yugang; Zhang, Alex Ce; Hall, David; Niaz, Iftikhar Ahmad; Raihan Miah, Mohammad Abu; Liu, Yu-Hsin; Lo, Yu-Hwa

    2017-09-01

    Since impact ionization was observed in semiconductors over half a century ago, avalanche photodiodes (APDs) using impact ionization in a fashion of chain reaction have been the most sensitive semiconductor photodetectors. However, APDs have relatively high excess noise, a limited gain-bandwidth product, and high operation voltage, presenting a need for alternative signal amplification mechanisms of superior properties. As an amplification mechanism, the cycling excitation process (CEP) was recently reported in a silicon p-n junction with subtle control and balance of the impurity levels and profiles. Realizing that CEP effect depends on Auger excitation involving localized states, we made the counter intuitive hypothesis that disordered materials, such as amorphous silicon, with their abundant localized states, can produce strong CEP effects with high gain and speed at low noise, despite their extremely low mobility and large number of defects. Here, we demonstrate an amorphous silicon low noise photodiode with gain-bandwidth product of over 2 THz, based on a very simple structure. This work will impact a wide range of applications involving optical detection because amorphous silicon, as the primary gain medium, is a low-cost, easy-to-process material that can be formed on many kinds of rigid or flexible substrates.

  7. Participation to the study of the electromagnetic calorimeter calibration for the CMS experiment and to the study of avalanche photodiodes

    International Nuclear Information System (INIS)

    Da Ponte Puill, V.

    1999-01-01

    The electromagnetic calorimeter CMS (Compact Muon Solenoid) has been chosen to study the Higgs boson production. This calorimeter will be constituted of more than 80000 lead tungstate scintillating crystals radiation resistant. Photodiodes have been especially optimized to detect the scintillating light of these crystals: avalanche photodiodes (APD). This thesis includes two separate parts. A first part deals with the APD submitted to high rate of radiations and tested in the Ulysse reactor of the Cea. The second part deals with the calorimeter calibration. (A.L.B.)

  8. Properties of P/M forged Al-Si alloys made by premixed powders. 1. Influences of dispersion and sizes of proeutectic Si on wear resistance; Kongoho ni yotte sakuseishita Al-Si kei shoketsu tanzo gokin no tokusei. 1. Taimamosei ni oyobosu shosho Si no bunsan jotai to ryukei no eikyo

    Energy Technology Data Exchange (ETDEWEB)

    Ishijima, Z.; Ichikawa, J.; Sasaki, s.; Shikata, H. [Hitachi Powdered Metals Co. Ltd., Tokyo (Japan)

    1995-10-15

    Influences of dispersion and sizes of proeutectic Si on wear resistance of P/M Al-Si alloys using the prealloying method and premixing method have been investigated. As a result, discretely dispersed proeutectic Si showed excellent wear resistance in compassion with uniformly dispersed one. The cause is considered to be the unclosed Si soft phase which has been preferentially worn away, consequently acting on forming oil grooves and burying worn particles. Further more the existence of the optimum size of proeutectic Si on wear resistance was confirmed. In the case of finer particles, only Al-Si alloy (pin) was warned away substantially. On the other handgun the case of larger particles, both the Al-Si alloy (pin) and the mating malarial (steel disc) were excessively warned away. It is assumed therefore that the finer proeutectic Si particles are not effective as hard particles, on the contrary, larger proeutectic Si particles increase the abrasive wear against the mating material, and those buried into the mating material initiate wear of Al-Si alloy at the same time. 2 refs., 10 figs., 1 tab.

  9. New optical probe approach using mixing effect in planar photodiode for biomedical applications

    Science.gov (United States)

    Pereira, Tânia; Vaz, Pedro; Oliveira, Tatiana; Santos, Inês; Leal, Adriana; Almeida, Vânia; Pereira, Helena; Correia, Carlos; Cardoso, João.

    2013-05-01

    The laser diode self-mixing technique is a well-known and powerful interferometric technique that has been used in biomedical applications, namely for the extraction of cardiovascular parameters. However, to construct an optical probe using the self-mixing principle which is able to acquire signals in the human carotid artery, some problems are expected. The laser diode has a small aperture area, which means that, for physiological sensing purposes, it can be considered as a point-like detector. This feature imparts difficulties to quality recording of physiological signals since the number of photons collected and mixed in the cavity of the photodiode is very small. In order to overcome this problem, a new mixing geometry based on an external large area planar photodiode (PD) is used in the probe, enabling a much larger number of photons to be collected, hence improving the quality of the signal. In this work, the possibility to obtain the mixing effect outside the laser cavity using an external photodetector, such as a planar photodiode, is demonstrated. Two test benches were designed, both with of two reflectors. The first one, which reflects the light beam with the same frequency of the original one is fixed, and the second one, is movable, reflecting the Doppler shifted light to the photodetector. The first test bench has a fixed mirror in front of the movable mirror, creating an umbra and penumbra shadow above the movable mirror. To avoid this problem, another test bench was constructed using a wedged beam splitter (WSB) instead of a fixed mirror. This new assembly ensures the separation of a single input beam into multiple copies that undergo successive reflections and refractions. Some light waves are reflected by the planar surface of WSB, while other light beams are transmitted through the WSB, reaching the movable mirror. Also in this case, the movable mirror reflects the light with a Doppler frequency shift, and the PD receives both beams. The two test

  10. Contact pin-printing of albumin-fungicide conjugate for silicon nitride-based sensors biofunctionalization: Multi-technique surface analysis for optimum immunoassay performance

    Energy Technology Data Exchange (ETDEWEB)

    Gajos, Katarzyna, E-mail: katarzyna.gajos@doctoral.uj.edu.pl [M. Smoluchowski Institute of Physics, Jagiellonian University, Łojasiewicza, 11, 30-348 Kraków (Poland); Budkowski, Andrzej [M. Smoluchowski Institute of Physics, Jagiellonian University, Łojasiewicza, 11, 30-348 Kraków (Poland); Tsialla, Zoi; Petrou, Panagiota [Institute of Nuclear & Radiological Sciences & Technology, Energy & Safety, NCSR Demokritos, P. Grigoriou & Neapoleos St., Aghia Paraksevi 15310, Athens (Greece); Awsiuk, Kamil; Dąbczyński, Paweł [M. Smoluchowski Institute of Physics, Jagiellonian University, Łojasiewicza, 11, 30-348 Kraków (Poland); Bernasik, Andrzej [Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, Mickiewicza 30, 30-059 Kraków (Poland); Academic Centre for Materials and Nanotechnology, AGH University of Science and Technology, Mickiewicza 30, 30-059 Kraków (Poland); Rysz, Jakub [M. Smoluchowski Institute of Physics, Jagiellonian University, Łojasiewicza, 11, 30-348 Kraków (Poland); Misiakos, Konstantinos; Raptis, Ioannis [Department of Microelectronics, Institute of Nanoscience and Nanotechnology, NCSR Demokritos, P. Grigoriou & Neapoleos St., Aghia Paraksevi 15310, Athens (Greece); Kakabakos, Sotirios [Institute of Nuclear & Radiological Sciences & Technology, Energy & Safety, NCSR Demokritos, P. Grigoriou & Neapoleos St., Aghia Paraksevi 15310, Athens (Greece)

    2017-07-15

    Highlights: • Contact pin-printing of overlapping probe spots and spotting by hand are compared. • Contact pin-printing favors probe immobilization with two-fold higher surface density. • Incomplete monolayer develops to bilayer as printing solution concentration increases. • Blocking molecules complete probe monolayer but reduce probe bilayer. • Surface immunoreaction increases with probe concentration in printing solution. - Abstract: Mass fabrication of integrated biosensors on silicon chips is facilitated by contact pin-printing, applied for biofunctionalization of individual Si{sub 3}N{sub 4}-based transducers at wafer-scale. To optimize the biofunctionalization for immunochemical (competitive) detection of fungicide thiabendazole (TBZ), Si{sub 3}N{sub 4} surfaces are modified with (3-aminopropyl)triethoxysilane and examined after: immobilization of BSA-TBZ conjugate (probe) from solutions with different concentration, blocking with bovine serum albumin (BSA), and immunoreaction with a mouse monoclonal antibody against TBZ. Nanostructure, surface density, probe composition and coverage uniformity of protein layers are evaluated with Atomic Force Microscopy, Spectroscopic Ellipsometry, Time-of-Flight Secondary Ion Mass Spectrometry and X-ray Photoelectron Spectroscopy. Contact pin-printing of overlapping probe spots is compared with hand spotted areas. Contact pin-printing resulted in two-fold increase of immobilized probe surface density as compared to hand spotting. Regarding BSA-TBZ immobilization, an incomplete monolayer develops into a bilayer as the concentration of BSA-TBZ molecules in the printing solution increases from 25 to 100 μg/mL. Upon blocking, however, a complete protein monolayer is formed for all the BSA-TBZ concentrations used. Free surface sites are filled with BSA for low surface coverage with BSA-TBZ, whereas loosely bound BSA-TBZ molecules are removed from the BSA-TBZ bilayer. As a consequence immunoreaction efficiency

  11. Numerical study and optimizing on micro square pin-fin heat sink for electronic cooling

    International Nuclear Information System (INIS)

    Zhao, Jin; Huang, Shanbo; Gong, Liang; Huang, Zhaoqin

    2016-01-01

    Micro pin-fin heat sink, characterized by low thermal resistance, compact structure and uniform temperature distribution along the flow direction, is effective and valuable for thermal management of electronic devices. To enhance the cooling performance of the micro square pin-fin heat sink, a geometry optimizing method changing pin-fin porosity and pin-fin located angle is proposed in this paper. The flow and heat transfer characteristics were studied numerically and the geometry of the micro square pin-fin heat sink was optimized. To reveal the characteristics and advantages of the micro square pin-fin heat sink, the comparison between the square pin-fin and the column pin-fin was made. Numerical results indicate that both the pin-fin porosity and located angle are important for the cooling capacity and thermal performance of the micro square pin-fin heat sink; the optimal porosity and located angle for thermal performance are 0.75 and 30° respectively. Furthermore, micro heat sinks with the optimized square pin-fin present better thermal performance than micro column pin-fin heat sinks, which implies that there is great potential to employ micro square pin-fin heat sinks for thermal management on electronic devices with high energy density. - Highlights: • An optimization method on geometry is proposed for micro square pin-fin heat sink. • Pin-fin porosity and pin-fin located angle are important on thermal performance. • Heat sinks with optimized square pin-fin hold higher cooling capacity than column pin-fin.

  12. Pin Tool Geometry Effects in Friction Stir Welding

    Science.gov (United States)

    Querin, J. A.; Rubisoff, H. A.; Schneider, J. A.

    2009-01-01

    In friction stir welding (FSW) there is significant evidence that material can take one of two different flow paths when being displaced from its original position in front of the pin tool to its final position in the wake of the weld. The geometry of the pin tool, along with the process parameters, plays an important role in dictating the path that the material takes. Each flow path will impart a different thermomechanical history on the material, consequently altering the material microstructure and subsequent weld properties. The intention of this research is to isolate the effect that different pin tool attributes have on the flow paths imparted on the FSWed material. Based on published weld tool geometries, a variety of weld tools were fabricated and used to join AA2219. Results from the tensile properties and microstructural characterization will be presented.

  13. Control of Flux Pinning in MOD YBCO Coated Conductor

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, W. [American Superconductor Corporation, Westborough, MA; Huang, Y. [American Superconductor Corporation, Westborough, MA; Li, X. [American Superconductor Corporation, Westborough, MA; Kodenkandath, Thomas [American Superconductor Corporation, Westborough, MA; Rupich, Marty [American Superconductor Corporation, Westborough, MA; Schoop, U. [American Superconductor Corporation, Westborough, MA; Verebelyi, D. T. [American Superconductor Corporation, Westborough, MA; Thieme, C. L. H. [American Superconductor Corporation, Westborough, MA; Siegal, E. E. [American Superconductor Corporation, Westborough, MA; Holesinger, T. G. [Los Alamos National Laboratory (LANL); Maiorov, B. [Los Alamos National Laboratory (LANL); Miller, D. J. [Argonne National Laboratory (ANL); Maroni, V. A. [Argonne National Laboratory (ANL); Goyal, Amit [ORNL; Specht, Eliot D [ORNL; Paranthaman, Mariappan Parans [ORNL

    2007-01-01

    Two different types of defect structures have been identified to be responsible for the enhanced pinning in metal organic deposited YBCO films. Rare earth additions result in the formation of nanodots in the YBCO matrix, which form uncorrelated pinning centers, increasing pinning in all magnetic field orientations. 124-type intergrowths, which form as laminar structures parallel to the ab-plane, are responsible for the large current enhancement when the magnetic field is oriented in the ab-plane. TEM studies showed that the intergrowths emanate from cuprous containing secondary phase particles, whose density is partially controlled by the rare earth doping level. Critical process parameters have been identified to control this phase formation, and therefore, control the f 24 intergrowth formation. This work has shown that through process control and proper conductor design, either by adjusting the composition or by multiple coatings of different functional layers, the desired angular dependence can be achieved.

  14. Control of flux pinning in MOD YBCO coated conductor.

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, W.; Huang, Y.; Li, X.; Kodenkandath, T.; Rupich, M. W.; Schoop, U.; Verebelyi, D. T.; Thieme, C. L. H.; Siegal, E.; Holesinger, T. G.; Maiorov, B.; Civale, L.; Miller, D. J.; Maroni, V. A.; Li, J.; Martin, P. M.; Specht, E. D.; Goyal, A.; Paranthaman, M. P.; American Superconductor Corp.; LANL; ORNL

    2007-06-01

    NTwo different types of defect structures have been identified to be responsible for the enhanced pinning in metal organic deposited YBCO films. Rare earth additions result in the formation of nanodots in the YBCO matrix, which form uncorrelated pinning centers, increasing pinning in all magnetic field orientations. 124-type intergrowths, which form as laminar structures parallel to the ab-plane, are responsible for the large current enhancement when the magnetic field is oriented in the ab-plane. TEM studies showed that the intergrowths emanate from cuprous containing secondary phase particles, whose density is partially controlled by the rare earth doping level. Critical process parameters have been identified to control this phase formation, and therefore, control the f 24 intergrowth formation. This work has shown that through process control and proper conductor design, either by adjusting the composition or by multiple coatings of different functional layers, the desired angular dependence can be achieved.

  15. Quality assurance of metallic fuel pins using Eddy current technique

    International Nuclear Information System (INIS)

    Sasi, B.; Thirunavukkarasu, S.; Rao, B.P.C.; Jayakumar, T.; Baldev Raj

    2009-01-01

    Metallic fuels (U-Pu-Zr) is promising for future fast reactors in view of their higher breeding ratio and burn-up as compared to oxide, carbide and other ceramic fuels. The metallic fuel pins are made of T91 tubes filled with fuel slugs with sodium as bonding material. Quality assurance of metallic fuel pins using non destructive evaluation (NDE) techniques is important. For this, eddy current (EC) technique is a natural choice in view of its sensitivity, speed, versatility and ease of use. NDE of metallic fuel pins comprises of detection of defects in T91 tubes, defects in metallic fuel slugs (2.84 mm diameter) and voids in sodium. For these inspection requirements, separate EC techniques would be employed and in this direction, finite element (FE) modelling has been performed and experimental simulation studies have been carried out. This paper discusses the results of these studies

  16. FFTF/IEM cell fuel pin weighing system

    International Nuclear Information System (INIS)

    Gibbons, P.W.

    1987-01-01

    The Interim Examination and Maintenance (IEM) cell in the Fast Flux Test Facility (FFTF) is used for remote disassembly of irradiated fuel and materials experiments. For those fuel experiments where the FFTF tag-gas detection system has indicated a fuel pin cladding breach, a weighing system is used in identifying that fuel pin with a reduced weight due to the escape of gaseous and volatile fission products. A fuel pin weighing machine, originally purchased for use in the Fuels and Materials Examination Facility (FMEF), was the basis for the IEM cell system. Design modifications to the original equipment were centered around adapting the machine to the differences between the two facilities and correcting deficiencies discovered during functional testing in the IEM cell mock-up

  17. Ordered Pinning Arrays with Tunable Geometry via Thermal Effects

    Science.gov (United States)

    Trastoy, Juan; Bernard, Rozenn; Briatico, Javier; Villegas, Javier E.; Malnou, Maxime; Bergeal, Nicolas; Lesueur, Jerome; Ulysse, Christian; Faini, Giancarlo

    2015-03-01

    We have used geometrically frustrated pinning arrays to create artificial vortex-ice. The pinning arrays are fabricated via ion irradiation of high-Tc superconducting films. These arrays present a very unique characteristic: the frustration can be reversibly switched on/off using temperature as a control knob, which allows stabilizing either a vortex-ice or a square vortex lattice. We have further investigated the thermal switching mechanism by studying the matching of the flux lattice to arrays that are incrementally deformed upon fabrication by introducing minute variations of the distance between pins. The array deformation exacerbates the thermal effects, leading to dramatic variations of the vortex distribution as a function of temperature. These results illustrate the strength of the temperature-induced reconfiguration effects, which may constitute a novel knob in fluxtronic devices based on vortex manipulation. Work supported by the French ANR MASTHER, the COST Action NanoSC, the Ville de Paris and the Galician Fundacion Barrie.

  18. Transverse commensurability effect for vortices on periodic pinning arrays

    Energy Technology Data Exchange (ETDEWEB)

    Reichhardt, Charles [Los Alamos National Laboratory; Reichhardt, Cynthia J [Los Alamos National Laboratory

    2008-01-01

    Using computer simulations, we demonstrate a type of commensurability that occurs for vortices moving longitudinally through periodic pinning arrays in the presence of an additional transverse driving force. As a function of vortex density, there is a series of broad maxima in the transverse critical depinning force that do not fall at the matching fields where the number of vortices equals an integer multiple of the number of pinning sites. The commensurability effects are associated with dynamical states in which evenly spaced structures consisting of one or more moving rows of vortices form between rows of pinning sites. Remarkably, the critical transverse depinning force can be more than an order of magnitude larger than the longitudinal depinning force.

  19. Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate

    Directory of Open Access Journals (Sweden)

    Bilel Azeza

    2015-07-01

    Full Text Available This paper reports on an initial assessment of the direct growth of In(GaAs/GaAs quantum dots (QDs solar cells on nanostructured surface Si substrate by molecular beam epitaxy (MBE. The effect of inserting 40 InAs/InGaAs/GaAs QDs layers in the intrinsic region of the heterojunction pin-GaAs/n+-Si was evaluated using photocurrent spectroscopy in comparison with pin-GaAs/n+-Si and pin-GaAs/GaAs without QDs. The results reveal the clear contribution of the QDs layers to the improvement of the spectral response up to 1200 nm. The novel structure has been studied by X ray diffraction (XRD, photoluminescence spectroscopy (PL and transmission electron microscopy (TEM. These results provide considerable insights into low cost III-V material-based solar cells.

  20. Sessile droplet de-pinning: new life for gravimetric data.

    Science.gov (United States)

    Chan, Kwaichow B; Pierce, Scott M

    2007-02-01

    Using three different types of surfaces as exemplars, we report a gravimetric method as a viable tool for studying the de-pinning process. Namely, the de-pin time, tau(d) (the time required for a horizontal sessile droplet to de-pin at the triple phase line on a given substrate), is estimated without using a time consuming and expensive video imaging system. This is made possible by deciphering the non-linear portion of mass vs time data of an evaporating sessile droplet. Typical gravimetric glass-substrate evaporative mass loss vs time data has two regimes: a long, linear regime followed by a short, non-linear regime. Traditionally, researchers extract only the evaporation rate of a droplet from the linear regime but discard (by truncating the data) or ignore (thus deriving no information from) the non-linear regime. The origin of the linear to non-linear transition, found almost universally in gravimetric data, persists unremarked upon. By constructing three very different types of surfaces and comparing gravimetric data with video imaging data taken simultaneously, we report the transition is correlated to the onset of the de-pinning event in each case. This realization enables us to measure the de-pin time, tau(d), with gravimetric data only; i.e., without the video system, gathering more information from gravimetric data than previously considered. The method has application in estimating the de-pin time of a droplet deposited on a substrate that yields poor top-view contrast for videography, such as a water droplets on silicon wafers or glass substrates. Finally, gravimetric data is more accurate for evaporation modeling when substrate/droplet interaction areas are not circular.

  1. 10 μ m-thick four-quadrant transmissive silicon photodiodes for beam position monitor application: electrical characterization and gamma irradiation effects

    Science.gov (United States)

    Rafí, J. M.; Pellegrini, G.; Quirion, D.; Hidalgo, S.; Godignon, P.; Matilla, O.; Juanhuix, J.; Fontserè, A.; Molas, B.; Pothin, D.; Fajardo, P.

    2017-01-01

    Silicon photodiodes are very useful devices as X-ray beam monitors in synchrotron radiation beamlines. Owing to Si absorption, devices thinner than 10 μ m are needed to achieve transmission over 90% for energies above 10 keV . In this work, new segmented four-quadrant diodes for beam alignment purposes are fabricated on both ultrathin (10 μ m-thick) and bulk silicon substrates. Four-quadrant diodes implementing different design parameters as well as auxiliary test structures (single diodes and MOS capacitors) are studied. An extensive electrical characterization, including current-voltage (I-V) and capacitance-voltage (C-V) techniques, is carried out on non-irradiated and gamma-irradiated devices up to 100 Mrad doses. Special attention is devoted to the study of radiation-induced charge build-up in diode interquadrant isolation dielectric, as well as its impact on device interquadrant resistance. Finally, the devices have been characterized with an 8 keV laboratory X-ray source at 108 ph/s and in BL13-XALOC ALBA Synchroton beamline with 1011 ph/s and energies from 6 to 16 keV . Sensitivity, spatial resolution and uniformity of the devices have been evaluated.

  2. Silicon-incorporated diamond-like coatings for Si3N4 mechanical seals

    International Nuclear Information System (INIS)

    Camargo, S.S.; Gomes, J.R.; Carrapichano, J.M.; Silva, R.F.; Achete, C.A.

    2005-01-01

    Amorphous silicon carbide (a-SiC) and silicon-incorporated diamond-like carbon films (DLC-Si) were evaluated as protective and friction reduction coatings onto Si 3 N 4 rings. Unlubricated tribological tests were performed with a pin-on-disk apparatus against stainless steel pins with loads ranging from 3 to 55 N and sliding velocities from 0.2 to 1.0 m/s under ambient air and 50-60% relative humidity. At the lowest loads, a-SiC coatings present a considerable improvement with respect to the behavior of uncoated disks since the friction coefficient is reduced to about 0.2 and the system is able to run stably for thousands of meters. At higher loads, however, a-SiC coatings fail. DLC-Si-coated rings, on the other hand, presented for loads up to 10 N a steady-state friction coefficient below 0.1 and very low wear rates. The lowest steady-state mean friction coefficient value of only 0.055 was obtained with a sliding velocity of 0.5 m/s. For higher loads in the range of 20 N, the friction coefficient drops to values around 0.1 but no steady state is reached. For the highest loads of over 50 N, a catastrophic behavior is observed. Typically, wear rates below 5x10 -6 and 2x10 -7 mm 3 /N m were obtained for the ceramic rings and pins, respectively, with a load of 10 N and a sliding velocity of 0.5 m/s. Analysis of the steel pin contact surface by scanning electron microscopy (SEM)-energy dispersive X-ray spectrometry (EDS) and Auger spectroscopy revealed the formation of an adherent tribo-layer mainly composed by Si, C and O. The unique structure of DLC-Si films is thought to be responsible for the formation of the tribo-layer

  3. Critical Currents in Quasiperiodic Pinning Arrays: Chains and Penrose Lattices

    OpenAIRE

    Misko, V. R.; Savel'ev, Sergey; Nori, Franco

    2005-01-01

    We study the critical depinning current Jc versus the applied magnetic flux Phi, for quasiperiodic (QP) chains and 2D arrays of pinning centers placed on the nodes of a five-fold Penrose lattice. In QP chains, the peaks in Jc(Phi) are determined by a sequence of harmonics of the long and short segments of the chain. The critical current Jc(Phi) has a remarkable self-similarity. In 2D QP pinning arrays, we predict analytically and numerically the main features of Jc(Phi), and demonstrate that ...

  4. Creep relaxation of fuel pin bending and ovalling stresses

    International Nuclear Information System (INIS)

    Chan, D.P.; Jackson, R.J.

    1979-06-01

    Analytical methods for calculating fuel pin cladding bending and ovalling stresses due to pin bundle-duct mechanical interaction taking into account nonlinear creep are presented. Calculated results are in close agreement with finite element results by MARC-CDC program. The methods are used to investigate the effect of creep on the FTR fuel cladding bending and ovalling stresses. It is concluded that the cladding of 316 SS 20% CW and reference design has high creep rates in the FTR core region to keep the bending and ovalling stresses to low levels

  5. Medical Gas Cylinder with Mismatched Colour and Pin Index

    Directory of Open Access Journals (Sweden)

    Mukherjee S

    2014-08-01

    Full Text Available The medical gas cylinders have various safety features to prevent the administration of wrong gas to the patient. Most of the features have visual impact (colour, label, markings on the cylinder body except pin index system on the cylinder valve, so error in this feature is difficult to analyze and is highly unpredictable. We had received one such cylinder in our institution where all other features (label, colour, marking pointed to nitrous oxide except the pin index which resembled with that of oxygen

  6. Fuel pin failure in the PFR/TREAT experiments

    International Nuclear Information System (INIS)

    Herbert, R.; Hunter, C.W.; Kramer, J.M.; Wood, M.H.; Wright, A.E.

    1986-01-01

    The PFR/TREAT safety testing programme involves the transient testing of fresh and pre-irradiated UK and US fuel pins. This paper summarizes the experimental and calculational results obtained to date on fuel pin failure during transient overpower (resulting from an accidental addition of resolivity) and transient undercooling followed by overpower (arising from an accidental stoppage of the primary sodium circulating pumps) accidents. Companion papers at this conference address: (I) the progress and future plans of the programme, and (II) post-failure material movements

  7. Analysis of the porosity distribution of mixed oxide pins

    International Nuclear Information System (INIS)

    Lieblich, M.; Lopez, J.

    1987-01-01

    In the frame of the Joint Irradiation Program IVO-FR2-Vg7 between the Centre of Nuclear Research of Karlsruhe (KfK), the irradiation of 30 mixed-oxide fuel rods in the FR2 experimental reactor was carried out. The pins were located in 10 single-walled NaK capsules. The behaviour of the fuel during its burnup was studied, mainly, the rest-porosity and cracking distribution in the pellet, partial densification, etc. In this work 3 pins from the capsule No. 165 were analyzed. The experimental results (pore and cracking profiles) were interpreted by the fuel rod code SATURN. (Author) 20 refs

  8. Establishment of the PIN within the Colombian party system

    Directory of Open Access Journals (Sweden)

    Vanessa Ortiz López

    2012-12-01

    Full Text Available This paper is a review of the legislative elections held in Colombia in 2010 and one of their main results, the establishment of the National Integration Party (PIN. The authors offer an analysis of articles that appeared in printed media, taking into consideration such variables as financing, legal constitution, popular acceptance and settling time. In this way, the authors attempt to demonstrate how the PIN managed to get a place in the political system and what are the consequences of this development, in particular, as the Department of Valle del Cauca is concerned.

  9. Improving the particle distribution and mechanical properties of friction-stir-welded composites by using a smooth pin tool

    Science.gov (United States)

    Liu, Huijie; Hu, Yanying; Zhao, Yunqiang; Fujii, Hidetoshi

    2017-09-01

    Friction stir welding (FSW) is a very promising technique for joining particle-reinforced aluminum-matrix composites (PRAMCs), but with increase in the volume fraction of reinforcing particles, their distribution in welds becomes inhomogeneous. This leads to an inconsistent deformation of welds and their destruction at low stresses. In order to improve the weld microstructure, a smooth pin tool was used for the friction stir welding of AC4A + 30 vol.% SiC particle-reinforced aluminum-matrix composites. The present work describes the effect of welding parameters on the characteristics of particle distribution and the mechanical properties of welds. The ultimate strength of weld reached, 309 MPa, was almost 190% of that of the basic material. The mechanism of SiC particle conglomeration is clearly illustrated by means of schematic illustrations.

  10. Overexpression of PvPin1, a Bamboo Homolog of PIN1-Type Parvulin 1, Delays Flowering Time in Transgenic Arabidopsis and Rice

    Directory of Open Access Journals (Sweden)

    Zhigang Zheng

    2017-09-01

    Full Text Available Because of the long and unpredictable flowering period in bamboo, the molecular mechanism of bamboo flowering is unclear. Recent study showed that Arabidopsis PIN1-type parvulin 1 (Pin1At is an important floral activator and regulates floral transition by facilitating the cis/trans isomerization of the phosphorylated Ser/Thr residues preceding proline motifs in suppressor of overexpression of CO 1 (SOC1 and agamous-like 24 (AGL24. Whether bamboo has a Pin1 homolog and whether it works in bamboo flowering are still unknown. In this study, we cloned PvPin1, a homolog of Pin1At, from Phyllostachys violascens (Bambusoideae. Bioinformatics analysis showed that PvPin1 is closely related to Pin1-like proteins in monocots. PvPin1 was widely expressed in all tested bamboo tissues, with the highest expression in young leaf and lowest in floral bud. Moreover, PvPin1 expression was high in leaves before bamboo flowering then declined during flower development. Overexpression of PvPin1 significantly delayed flowering time by downregulating SOC1 and AGL24 expression in Arabidopsis under greenhouse conditions and conferred a significantly late flowering phenotype by upregulating OsMADS56 in rice under field conditions. PvPin1 showed subcellular localization in both the nucleus and cytolemma. The 1500-bp sequence of the PvPin1 promoter was cloned, and cis-acting element prediction showed that ABRE and TGACG-motif elements, which responded to abscisic acid (ABA and methyl jasmonate (MeJA, respectively, were characteristic of P. violascens in comparison with Arabidopsis. On promoter activity analysis, exogenous ABA and MeJA could significantly inhibit PvPin1 expression. These findings suggested that PvPin1 may be a repressor in flowering, and its delay of flowering time could be regulated by ABA and MeJA in bamboo.

  11. Switchable field-tuned control of magnetic domain wall pinning along Co microwires by 3D e-beam lithographed structures

    International Nuclear Information System (INIS)

    Blanco-Roldán, C.; Quirós, C.; Rodriguez-Rodriguez, G.; Vélez, M.; Martín, J.I.; Alameda, J.M.

    2016-01-01

    Three-dimensional magnetic circuits composed of Co microwires crossed by elevated Co bridges have been patterned on Si substrate by e-beam lithography and lift-off process. The lithographic procedure includes a double resist procedure that optimizes the shape of the bridge, so that 200 nm air gaps can be routinely achieved in between the wire and bridge elements. Microwire magnetization reversal processes have been analyzed by magneto-optical Kerr effect microscopy with different remanent bridge configurations. When the Co bridge is magnetized along the in-plane direction parallel to the wire axis, its stray field induces a marked pinning effect on domain wall propagation along the wire below it, even without being in contact. Changing the sign of the remanent state of the bridge, domain wall pinning can be selected to occur in either the ascending or descending branches of the wire hysteresis loop. Thus, these wire-bridge 3D circuits provide a simple system for tunable domain wall pinning controllable through the pre-recorded bridge remanent state. - Highlights: • Electron beam lithography is used to fabricate a tridimensional magnetic circuit. • Proposed circuit is made of a Co bridge overcrossing a non-contacted Co microwire. • Domain wall propagation can be controlled by previous magnetization of the system. • Domain wall pinning in the wire depends on the applied magnetic field sign.

  12. Switchable field-tuned control of magnetic domain wall pinning along Co microwires by 3D e-beam lithographed structures

    Energy Technology Data Exchange (ETDEWEB)

    Blanco-Roldán, C., E-mail: c.blanco@cinn.es [Departamento de Física, Universidad de Oviedo, Avenida Calvo Sotelo s/n, 33007 Oviedo (Spain); Centro de Investigación en Nanomateriales y Nanotecnología CINN (CSIC, Universidad de Oviedo), Avenida de la Vega 4-6, 33940 El Entrego (Spain); Quirós, C.; Rodriguez-Rodriguez, G.; Vélez, M.; Martín, J.I.; Alameda, J.M. [Departamento de Física, Universidad de Oviedo, Avenida Calvo Sotelo s/n, 33007 Oviedo (Spain); Centro de Investigación en Nanomateriales y Nanotecnología CINN (CSIC, Universidad de Oviedo), Avenida de la Vega 4-6, 33940 El Entrego (Spain)

    2016-02-15

    Three-dimensional magnetic circuits composed of Co microwires crossed by elevated Co bridges have been patterned on Si substrate by e-beam lithography and lift-off process. The lithographic procedure includes a double resist procedure that optimizes the shape of the bridge, so that 200 nm air gaps can be routinely achieved in between the wire and bridge elements. Microwire magnetization reversal processes have been analyzed by magneto-optical Kerr effect microscopy with different remanent bridge configurations. When the Co bridge is magnetized along the in-plane direction parallel to the wire axis, its stray field induces a marked pinning effect on domain wall propagation along the wire below it, even without being in contact. Changing the sign of the remanent state of the bridge, domain wall pinning can be selected to occur in either the ascending or descending branches of the wire hysteresis loop. Thus, these wire-bridge 3D circuits provide a simple system for tunable domain wall pinning controllable through the pre-recorded bridge remanent state. - Highlights: • Electron beam lithography is used to fabricate a tridimensional magnetic circuit. • Proposed circuit is made of a Co bridge overcrossing a non-contacted Co microwire. • Domain wall propagation can be controlled by previous magnetization of the system. • Domain wall pinning in the wire depends on the applied magnetic field sign.

  13. PIN diode and neutron spectrum measurements at the Army Pulse Radiation Facility

    International Nuclear Information System (INIS)

    Oliver, M.A.

    1994-01-01

    The Army Pulse Radiation Facility (APRF) is a multi-faceted facility operating a Godiva type pulse reactor, housed in a low scatter aluminum silo 30m in diameter and 20m high. The reactor is movable to several locations and heights. Several well characterized exposure environments are available for experiments. When testing silicon devices against a nuclear threat, it is essential to consider the difference between the neutron energy spectrum of the threat environment and that of the test environment. In this paper, neutron spectrum measurements using the foil activation technique have been made in two widely varying environments. One is an extremely high neutron-to-gamma field and the other extremely low. These measurements were used to characterize the fields and to evaluate the use of the DN-156 PIN diode for measuring 1 MeV equivalent neutron fluence in silicon (Φ1MeV(Si)). The agreement between the Φ1MeV(Si) as measured with diodes and as determined by the spectral measurements was within ± 5%. A proton recoil neutron spectrum measurement was also made in the low gamma environment

  14. Image analysis for remote examination of fuel pins

    International Nuclear Information System (INIS)

    Cook, J.H.; Nayak, U.P.

    1982-01-01

    An image analysis system operating in the Wing 9 Hot Cell Facility at Los Alamos National Laboratory provides quantitative microstructural analyses of irradiated fuels and materials. With this system, fewer photomicrographs are required during postirradiation microstructural examination and data are available for analysis much faster. The system has been used successfully to examine Westinghouse Advanced Reactors Division experimental fuel pins

  15. Pinning an Ion with an Intracavity Optical Lattice

    DEFF Research Database (Denmark)

    Linnet, Rasmus Bogh; Leroux, Ian Daniel; Marciante, Mathieu

    2012-01-01

    We report one-dimensional pinning of a single ion by an optical lattice. A standing-wave cavity produces the lattice potential along the rf-field-free axis of a linear Paul trap. The ion’s localization is detected by measuring its fluorescence when excited by standing-wave fields with the same...

  16. Construction of mammary gland specific expression plasmid pIN ...

    African Journals Online (AJOL)

    Then the neo gene was amplified from plasmid pCDNA3.1 and placed downstream of the β-casein 3' arm as a positive selection marker. In order to analyze the bioactivity of plasmid pIN, it was transfected into the Bcap-37 cell line and injected into goat mammary gland. Western-blotting and quantitative polymerase chain ...

  17. Silicon PIN diode array hybrids for charged particle detection

    International Nuclear Information System (INIS)

    Shapiro, S.L.; Dunwoodie, W.M.; Arens, J.F.; Jernigan, J.G.; Gaalema, S.

    1988-09-01

    We report on the design of silicon PIN diode array hybrids for use as charged particle detectors. A brief summary of the need for vertex detectors is presented. Circuitry, block diagrams and device specifications are included. 8 refs., 7 figs., 1 tab

  18. Review of HEDL fuel pin transient analyses analytical programs

    International Nuclear Information System (INIS)

    Scott, J.H.; Baars, R.E.

    1975-05-01

    Methods for analysis of transient fuel pin performance are described, as represented by the steady-state SIEX code and the PECT series of codes used for steady-state and transient mechanical analyses. The empirical fuel failure correlation currently in use for analysis of transient overpower accidents is described. (U.S.)

  19. Pinning of size-selected Pd nanoclusters on graphite

    NARCIS (Netherlands)

    Gibilisco, S.; Di Vece, M.; Palomba, S.; Faraci, G.; Palmer, R.E.

    2006-01-01

    The production of stable cluster arrays on smooth surfaces has several potential technological applications. We report a study of the pinning of size-selected palladium nanoclusters on the graphite surface. The clusters formed during gas aggregation in vacuum are projected with sufficient kinetic

  20. On pins and needles: how vaccines are portrayed on Pinterest.

    Science.gov (United States)

    Guidry, Jeanine P D; Carlyle, Kellie; Messner, Marcus; Jin, Yan

    2015-09-22

    Vaccination is an effective public health tool for reducing morbidity and mortality caused by infectious diseases. However, increasing numbers of parents question the safety of vaccines or refuse to vaccinate their children outright. The Internet is playing a significant role in the growing voice of the anti-vaccination movement as a growing number of people use the Internet to obtain health information, including information about vaccines. Given the role the Internet plays in providing vaccination-related communication, coupled with limited research in this area, this study focused on the social media platform Pinterest, analyzing 800 vaccine-related pins through a quantitative content analysis. The majority of the pins were anti-vaccine, and most were original posts as opposed to repins. Concerns about vaccine safety and side effects were oft-repeated themes, as was the concept of conspiracy theory. Pro-vaccine pins elicited consistently more engagement than anti-vaccine pins. Health educators and public health organizations should be aware of these dynamics, since a successful health communication campaign should start with an understanding of what and how publics communicate about the topic at hand. Copyright © 2015 Elsevier Ltd. All rights reserved.

  1. Percutaneous Pin Fixation of Gartland Type I11 Supraconylar ...

    African Journals Online (AJOL)

    This was a prospective study of 40 children with severely displaced (Gartland Type 111) supracondylar fractures of the humerus treated by lateral percutaneous pin fixation together with a 'figure of eight' plaster casting. Their mean age was 6.9 years, the mean follow up was 2 years/. Eighteen (45%) of the patients had ...

  2. ``Pinning strategy": a novel approach for predicting the backbone ...

    Indian Academy of Sciences (India)

    2006-09-06

    Sep 6, 2006 ... In this study, we propose a new method called “pinning strategy” that used this specific feature to predict long protein fragments. Its goal is to define highly probable successions of PBs. It starts from the most probable SW and is then extended with overlapping SWs. Starting from an initial prediction rate of ...

  3. Vortex lattice mobility and effective pinning potentials in the peak ...

    Indian Academy of Sciences (India)

    In that region of field and temperature the mobility of the vortex lattice (VL) is found to be dependent on the dynamical history. Recently we reported evidence that the VL reorganizes and accesses to robust VL configurations (VLCs) with different effective pinning potential wells arising in response to different system histories.

  4. Assemblies and fuel pin behaviour under irradiation in FBR-350

    International Nuclear Information System (INIS)

    Karaulov, V.N.; Blynski, A.P.; Yakovlev, I.L.; Kononova, E.V.

    1998-01-01

    The efficiency of all types of assemblies and fuel pins of the reactor BN-350 is considered in detail. The factors limiting the efficiency are indicated. The behaviour of assemblies with stainless steel ducts is studied. It is shown that the efficiency is restricted in this case by shape and dimensional changes of hexagonal ducts due to radiation swelling and radiation creep of structural materials. The problem of dimensional changes of ducts was solved for cores of reactors BN-350 and BN-600 after testing in BN-350 of experimental assemblies with ducts made of ferritic-martensitic steel 12Cr13Mo2NbVB. For fuel pins of the second type of loading with clad made of stainless steel 0Cr16Ni15Mo3Nb the efficiency is limited by burnup of 13% h.a. and damage dose of 90 dpa. To increase the burnup the core of the BN-350 is supplied by assemblies of modernized type with pins having a large gas plenum and clad made of the stainless steel 0Cr16Ni15Mo2Mn2TiVB that has a good resistance to irradiation. The efficiency of fuel pins of modernized assemblies in the reactor BN-350 core conditions is provided up to 15% h.a. and damage dose 105 dpa. (author)

  5. Pinning strategy": a novel approach for predicting the backbone ...

    Indian Academy of Sciences (India)

    2006-09-06

    Sep 6, 2006 ... In this study, we propose a new method called “pinning strategy” that used this specific feature to predict long protein fragments. Its goal is to define highly probable successions of PBs. It starts from the most probable SW and is then extended with overlapping SWs. Starting from an initial prediction rate of ...

  6. Percutaneous Pin Fixation of Gartland Type I11 Supraconylar ...

    African Journals Online (AJOL)

    S G Lungu M.Med (Orth). Specialist Orthopaedic Surgeon. Zambian Italian Orthopaedic Hospital, Lusaka. Key words: Percutaneous, pin fixation, Gartland type Ill, supracondylar, fractures, and humerus. This was a prospective study of 40 children with severely displaced (Gartland Type 111) supracondylar fractures of the ...

  7. Alternative heat transfer surfaces for AGR fuel pins

    International Nuclear Information System (INIS)

    Wilkie, D.

    1983-01-01

    Advanced gas-cooled reactors employing stainless-steel clad fuel pins must be economical in the use of steel to avoid incurring crippling penalties arising from neutron absorption. Any means of enhancing heat transfer by altering the surface of the pin by the adoption of projections necessitates that these projections are of low height relative to the equivalent diameter of the surrounding passage. This rules out the use of extended surfaces in the form of large fins, which in any case would be ruled out on thermal efficiency grounds owing to the large temperature drop down the poorly conducting steel but it does not rule out the use of many fins of low height. Longitudinal fins of low height for which results have been obtained for single pins tested in smooth circular channels and multi-start ribs for which single-pin and cluster results are available, are considered. The advantages and disadvantages of these and other ideas are considered in relation to the Advanced Gas-cooled Reactor. (author)

  8. Calculation of fuel pin failure timing under LOCA conditions

    International Nuclear Information System (INIS)

    Jones, K.R.; Wade, N.L.; Siefken, L.J.; Straka, M.; Katsma, K.R.

    1992-01-01

    The objective of this research was to develop and demonstrate a methodology for calculation of the time interval between receipt of the containment isolation signals and the first fuel pin failure for loss-of-coolant accidents (LOCAs). Demonstration calculations were performed for a Babcock and Wilcox design (Oconee) and a Westinghouse 4-loop design (Seabrook). Sensitivity studies were performed to assess the impacts of fuel pin burnup, axial peaking factor, break size, emergency core cooling system availability, and main coolant pump trip on these times. The analysis was performed using a four-code approach, comprised of FRAPCON-2, SCDAP/RELAP5/MOD3, TRAC-PF1/MOD1, and FRAP-T6. In addition to the calculation of timing results, this analysis provided a comparison of the capabilities of SCDAP/RELAP5/MOD3 with TRAC-PF1/MOD1 for large-break LOCA analysis. This paper discusses the methodology employed and the code development efforts required to implement the methodology. The shortest time intervals calculated between initiation of containment isolation and fuel pin failure were 11.4 s and 19.1 s for the Babcock and Wilcox and Westinghouse plants, respectively. The FRAP-T6 fuel pin failure times calculated using thermal-hydraulic data generated by SCDAP/RELAP5/MOD3 were more conservative than those calculated using data generated by TRAC-PF1/MOD1

  9. Calculation of fuel pin failure timing under LOCA conditions

    International Nuclear Information System (INIS)

    Jones, K.R.; Wade, N.L.; Siefken, L.J.; Straka, M.; Katsma, K.R.

    1991-10-01

    The objective of this research was to develop and demonstrate a methodology for calculation of the time interval between receipt of the containment isolation signals and the first fuel pin failure for loss-of-coolant accidents (LOCAs). Demonstration calculations were performed for a Babcock and Wilcox (B ampersand W) design (Oconee) and a Westinghouse (W) 4-loop design (Seabrook). Sensitivity studies were performed to assess the impacts of fuel pin burnup, axial peaking factor, break size, emergency core cooling system (ECCS) availability, and main coolant pump trip on these items. The analysis was performed using a four-code approach, comprised of FRAPCON-2, SCDAP/RELAP5/MOD3, TRAC-PF1/MOD1, and FRAP-T6. In addition to the calculation of timing results, this analysis provided a comparison of the capabilities of SCDAP/RELAP5/MOD3 with TRAC-PF1/MOD1 for large-break LOCA analysis. This paper discusses the methodology employed and the code development efforts required to implement the methodology. The shortest time intervals calculated between initiation of containment isolation and fuel pin failure were 11.4 s and 19.1 for the B ampersand W and W plants, respectively. The FRAP-T6 fuel pin failure times calculated using thermal-hydraulic data generated by SCDAP/RELAP5/MOD3 were more conservative than those calculated using data generated by TRAC-PF1/MOD1. 18 refs., 7 figs., 4 tabs

  10. Pin weighing system for the Fuels and Materials Examination Facility

    International Nuclear Information System (INIS)

    Frandsen, G.B.; Mullally, J.A.; Gaal, P.S.

    1981-01-01

    A pin weighing system was designed and built for use in the FMEF Nondestructive Examination Cell. The system provides a 5000 gram capacity with a +- 0.03 gram overall accuracy and a +- 0.02 gram reproducibility. The design incorporates all required features to operate and maintain the system remotely in a hot cell environment

  11. Performance of advanced oxide fuel pins in EBR-II

    International Nuclear Information System (INIS)

    Lawrence, L.A.; Jensen, S.M.; Hales, J.W.; Karnesky, R.A.; Makenas, B.J.

    1986-05-01

    The effects of design and operating parameters on mixed-oxide fuel pin irradiation performance were established for the Hanford Engineering Development Laboratory (HEDL) advanced oxide EBR-II test series. Fourteen fuel pins breached in-reactor with reference 316 SS cladding. Seven of the breaches are attributed to FCMI. Of the remaining seven breached pins, three are attributed to local cladding over-temperatures similar to the breach mechanism for the reference oxide pins irradiated in EBR-II. FCCI was found to be a contributing factor in two high burnup, i.e., 11.7 at. % breaches. The remaining two breaches were attributed to mechanical interaction of UO 2 fuel and fission products accumulated in the lower cladding insulator gap, and a loss of cladding ductility possibly due to liquid metal embrittlement. Fuel smear density appears to have the most significant impact on lifetime. Quantitative evaluations of cladding diameter increases attributed to FCMI, established fuel smear density, burnup, and cladding thickness-to-diameter ratio as the major parameters influencing the extent of cladding strain

  12. Ising antiferromagnet with mobile, pinned, and quenched defects

    Directory of Open Access Journals (Sweden)

    W.Selk

    2005-01-01

    Full Text Available Motivated by recent experiments on (Sr,Ca,La14Cu24O41, a two-dimensional Ising antiferromagnet with mobile, locally pinned and quenched defects is introduced and analyzed using mainly Monte Carlo techniques. The interplay between the arrangement of the defects and the magnetic ordering as well as the effect of an external field are studied.

  13. 1071-IJBCS-Article-Crépin Pene

    African Journals Online (AJOL)

    KODJIO NORBERT

    ://indexmedicus.afro.who.int. Late season sugarcane performance as affected by soil water deficit at the yield formation stage in commercial farms of northern Ivory Coast. Crépin B. PÉNÉ *, Marco H. OUATTARA and Sylvain G. KOULIBALY.

  14. Fuel pins volume measuring installation in hot cells

    International Nuclear Information System (INIS)

    Prokudanov, D.L.; Troitskii, S.V.

    1987-11-01

    The NIIAR Institute has elaborated a method and concepted an installation for determining precisely the fuel pin volume. This determination is based on a fluid measurement level by ultrason. The operation principle and the installation diagram are indicated in this document [fr

  15. Neutron radiography for quality assurance of PHWR fuel pins

    International Nuclear Information System (INIS)

    Chandrasekharan, K.N.; Patil, B.P.; Ghosh, J.K.; Ganguly, C.

    1993-01-01

    Neutron radiography was employed for quality assurance (QA) for advanced PHWR experimental fuel pins containing mixed uranium-plutonium dioxide and thorium-plutonium dioxide pellets. Direct, transfer and track-etch techniques were utilised. The thermal neutron beam facility of APSARA research reactor at Bhabha Atomic Research Centre was used. (author). 5 refs., 16 figs., 2 tabs

  16. Flux-Vortex Pinning and Neutron Star Evolution

    Indian Academy of Sciences (India)

    M. Ali Alpar

    Flux-Vortex Pinning and Neutron Star Evolution. M. ALI ALPAR. Faculty of Engineering and Natural Sciences, Sabancı University, 34956, Istanbul, Turkey. E-mail: alpar@sabanciuniv.edu. MS received 22 May 2017; accepted 24 July 2017; published online 12 September 2017. Abstract. G. Srinivasan et al. (1990) proposed ...

  17. Vortex lattice mobility and effective pinning potentials in the peak

    Indian Academy of Sciences (India)

    In that region of field and temperature the mobility of the vortex lattice (VL) is found to be dependent on the dynamical history. Recently we reported evidence that the VL reorganizes and accesses to robust VL configurations (VLCs) with different effective pinning potential wells arising in response to different system histories.

  18. Pin Tract Infection after Uniplanar External Fixation of Open ...

    African Journals Online (AJOL)

    ADMIN

    Regionally, a study by Jellis et al in Lusaka, Zambia, compared the rate of severe pin tract infection in HIV negative and positive ... likelihood of infection such as human immunodeficiency virus infection, diabetes mellitus, liver failure, renal failure, tumours ... Combined Open Tibia-Fibular. And Femur Fractures. 2. 2.7. Totals.

  19. The stress distribution in pin-loaded orthotropic plates

    Science.gov (United States)

    Klang, E. C.; Hyer, M. W.

    1985-01-01

    The performance of mechanically fastened composite joints was studied. Specially, a single-bolt connector was modeled as a pin-loaded, infinite plate. The model that was developed used two dimensional, complex variable, elasticity techniques combined with a boundary collocation procedure to produce solutions for the problem. Through iteration, the boundary conditions were satisfied and the stresses in the plate were calculated. Several graphite epoxy laminates were studied. In addition, parameters such as the pin modulus, coefficient of friction, and pin-plate clearance were varied. Conclusions drawn from this study indicate: (1) the material properties (i.e., laminate configuration) of the plate alter the stress state and, for highly orthotropic materials, the contact stress deviates greatly from the cosinusoidal distribution often assumed; (2) friction plays a major role in the distribution of stresses in the plate; (3) reversing the load direction also greatly effects the stress distribution in the plate; (4) clearance (or interference) fits change the contact angle and thus the location of the peak hoop stress; and (5) a rigid pin appears to be a good assumption for typical material systems.

  20. Dynamic and steady state current response to light excitation of multilayered organic photodiodes

    Science.gov (United States)

    Zaus, E. S.; Tedde, S.; Fürst, J.; Henseler, D.; Döhler, G. H.

    2007-02-01

    Measurements of current transients are used to gain insight into the mechanism of charge transport and extraction of photodiodes based on bulk heterojunction blends of poly-3-hexyl-thiophene and [6,6]-phenyl C61 butyric acid methyl ester. It is shown that the implementation of an appropriate hole conducting layer leads to a reduction of the dark current in the reverse direction. It is observed that the dynamic response to light excitation is strongly influenced by the thickness of the hole conducting layer, the light intensity, and the applied bias. Charge accumulation at the interface is assumed to result in the characteristic shape of the transients. The shape of the switch-off transient can be understood qualitatively by an equivalent circuit diagram.

  1. High-resolution mapping of quantum efficiency of silicon photodiode via optical-feedback laser microthermography

    International Nuclear Information System (INIS)

    Cemine, Vernon Julius; Blanca, Carlo Mar; Saloma, Caesar

    2006-01-01

    We map the external quantum efficiency (QE) distribution of a silicon photodiode (PD) sample via a thermographic imaging technique based on optical-feedback laser confocal microscopy. An image pair consisting of the confocal reflectance image and the 2D photocurrent map is simultaneously acquired to delineate the following regions of interest on the sample: the substrate, the n-type region, the pn overlay, and the bonding pad. The 2D QE distribution is derived from the photocurrent map to quantify the optical performance of these sites. The thermal integrity of the sample is then evaluated by deriving the rate of change of QE with temperature T at each point on the silicon PD. These gradient maps function not only as stringent measures of local thermal QE activity but they also expose probable defect locations on the sample at high spatial resolution - a capability that is not feasible with existing bulk measurement techniques

  2. Problems and solutions in high-rate multichannel hybrid photodiode design The CMS experience

    CERN Document Server

    Cushman, P B

    2002-01-01

    The unique conditions of the CMS experiment (4 T magnetic field, restricted access, high neutron radiation, and 25-ns bunch-crossings) necessitated the development of a new type of high-rate multichannel hybrid photodiode for the tile/fiber hadronic calorimeter. New complexities arose in the push toward high-rate operation, necessitating design changes in the diode structure and surface treatment. The product is now capable of high-rate operation with low crosstalk and leakage current. Lifetime studies of high-voltage behavior, total charge, and irradiation have shown that the tubes will survive the ten years of CMS running with only a few percent change in gain and manageable leakage current rise. (13 refs).

  3. Micro-diffraction Investigation of Localized Strain in Mesa-etched HgCdTe Photodiodes

    Science.gov (United States)

    Tuaz, Aymeric; Ballet, Philippe; Biquard, Xavier; Rieutord, François

    2017-09-01

    We present an x-ray micro-diffraction investigation of localized strain and lattice disorientation in HgCdTe layers with a submicronic resolution using a synchrotron white beam in Laue configuration. Diffraction peak displacement mapping evidences bending of the crystal planes around mesa-etched photodiodes, with strong dependence upon the processing steps. The etching step by itself does not induce any deformation within the layer, while the passivation step leads to sufficient strain for plastic deformation to occur at the lateral edges of the etching. The annealing step is found to have a healing effect on the layer, which reduces the overall deformation and even re-crystallizes plastically deformed areas of the layer.

  4. X-ray fluorescence hologram data collection with a cooled avalanche photodiode

    CERN Document Server

    Hayashi, K; Matsubara, E I; Kishimoto, S; Mori, T; Tanaka, M

    2002-01-01

    A high counting rate X-ray detector with an appropriate energy resolution is desired for high quality X-ray fluorescence hologram measurements because a holographic pattern is detected as extremely small intensity variations of X-ray fluorescence on a large intensity background. A cooled avalanche photodiode (APD), which has about 10% energy resolution and is designed for a high counting rate, fits the above requirements. Reconstructed atomic images from experimental holograms using the APD system provide us a clear view of the first and second neighbor atoms around an emitter. The present result proved that a combination of this APD system and a synchrotron X-ray source enables us to measure a high quality hologram for a reasonable measurement time.

  5. Spray coated indium-tin-oxide-free organic photodiodes with PEDOT:PSS anodes

    Directory of Open Access Journals (Sweden)

    Morten Schmidt

    2014-10-01

    Full Text Available In this paper we report on Indium Tin Oxide (ITO-free spray coated organic photodiodes with an active layer consisting of a poly(3-hexylthiophen (P3HT and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM blend and patterned poly(3,4-ethylenedioxythiophene:poly(styrenesulfonate (PEDOT:PSS electrodes. External quantum efficiency and current voltage characteristics under illuminated and dark conditions as well as cut-off frequencies for devices with varying active and hole conducting layer thicknesses were measured in order to characterize the fabricated devices. 60% quantum efficiency as well as nearly four orders of magnitude on-off ratios have been achieved. Those values are comparable with standard ITO devices.

  6. Hard disk drive based microsecond x-ray chopper for characterization of ionization chambers and photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Müller, O., E-mail: o.mueller@uni-wuppertal.de; Lützenkirchen-Hecht, D.; Frahm, R. [Bergische Universität Wuppertal, Gaußstraße 20, Wuppertal 42119 (Germany)

    2015-03-15

    A fast X-ray chopper capable of producing ms long X-ray pulses with a typical rise time of few μs was realized. It is ideally suited to investigate the temporal response of X-ray detectors with response times of the order of μs to ms, in particular, any kind of ionization chambers and large area photo diodes. The drive mechanism consists of a brushless DC motor and driver electronics from a common hard disk drive, keeping the cost at an absolute minimum. Due to its simple construction and small dimensions, this chopper operates at home lab based X-ray tubes and synchrotron radiation sources as well. The dynamics of the most important detectors used in time resolved X-ray absorption spectroscopy, namely, ionization chambers and Passivated Implanted Planar Silicon photodiodes, were investigated in detail. The results emphasize the applicability of this X-ray chopper.

  7. Concentration dependence of photovoltaic properties of photodiodes based on polymer-fullerene blends

    International Nuclear Information System (INIS)

    Jin Hui; Hou Yanbing; Meng Xianguo; Teng Feng

    2007-01-01

    Photovoltaic properties of photodiodes based on the blends of poly[2-methoxy-5-(2'-ethylhexoxy-1,4-phenylenevinylene) (MEH-PPV) and fullerene (C 60 ) are investigated. The experimental results show that the open-circuit voltage (V oc ) declines with the increasing concentration of C 60 . A big variation of ∼400 mV in the V oc for the devices with the concentration of 0% and 50% indicates the electron affinity potential of C 60 can strongly influence the resulting V oc . At the bias of -1.5 V, the photosensitivity of the device with the concentration of 50% is 55.6 mA/W under the illumination intensity of 16.7 mW/cm 2 and its photogain sharply rises by two orders of magnitude than that of the undoped MEH-PPV device

  8. Gaseous flat-panel detector with glass gas electron multiplier coupled with micro-photodiode array

    Science.gov (United States)

    Mitsuya, Yuki; Miyoshi, Hiroaki; Fujiwara, Takeshi; Uesaka, Mitsuru; Takahashi, Hiroyuki

    2017-11-01

    In this study, we propose and demonstrate a novel imaging system, a gaseous flat-panel detector (FPD). The gaseous FPD consists of a glass gas electron multiplier (G-GEM) with a scintillation gas, which is optically coupled with photodiode panel fabricated with liquid crystal display technology. The G-GEM is ideal as a low energy deposition radiation detector because of its single stage high gas-gain and hence, its high photon yield. We obtained a preliminary X-ray image with the system by using a Ne/CF4 90/10 gas mixture. The typical position resolution was 0.93 mm in FWHM, which was obtained from the fitting of edge profiles

  9. Analysis of genetically modified organisms by pyrosequencing on a portable photodiode-based bioluminescence sequencer.

    Science.gov (United States)

    Song, Qinxin; Wei, Guijiang; Zhou, Guohua

    2014-07-01

    A portable bioluminescence analyser for detecting the DNA sequence of genetically modified organisms (GMOs) was developed by using a photodiode (PD) array. Pyrosequencing on eight genes (zSSIIb, Bt11 and Bt176 gene of genetically modified maize; Lectin, 35S-CTP4, CP4EPSPS, CaMV35S promoter and NOS terminator of the genetically modified Roundup ready soya) was successfully detected with this instrument. The corresponding limit of detection (LOD) was 0.01% with 35 PCR cycles. The maize and soya available from three different provenances in China were detected. The results indicate that pyrosequencing using the small size of the detector is a simple, inexpensive, and reliable way in a farm/field test of GMO analysis. Copyright © 2014 Elsevier Ltd. All rights reserved.

  10. Predictions of silicon avalanche photodiode detector performance in water vapor differential absorption lidar

    Science.gov (United States)

    Kenimer, R. L.

    1988-01-01

    Performance analyses are presented which establish that over most of the range of signals expected for a down-looking differential absorption lidar (DIAL) operated at 16 km the silicon avalanche photodiode (APD) is the preferred detector for DIAL measurements of atmospheric water vapor in the 730 nm spectral region. The higher quantum efficiency of the APD's, (0.8-0.9) compared to a photomultiplier's (0.04-0.18) more than offsets the higher noise of an APD receiver. In addition to offering lower noise and hence lower random error the APD's excellent linearity and impulse recovery minimize DIAL systematic errors attributable to the detector. Estimates of the effect of detector system parameters on overall random and systematic DIAL errors are presented, and performance predictions are supported by laboratory characterization data for an APD receiver system.

  11. Design and implementation of a prototype for metrology with UVED and photodiodes

    International Nuclear Information System (INIS)

    Hidalgo Padilla, Rodney Ernesto

    2013-01-01

    A test system was developed for measuring radiant flux produced by a UVED, using photodiodes with the aim of improving metrology systems used in LAFTLA (Laboratorio de Fotonica y Tecnologia Laser, Universidad de Costa Rica). The system has been used to calibrate three teams of measurement. The calibration procedure has been to measure the radiation of UVED using the devices. Each device has repeated the measurement process, with a pattern, comparing the values obtained and taking into account the differences between areas of the sensors. Problems with the maximum capacity of measuring equipment were solved, in some cases this capacity was less than the required. Some sources of error have been identified, for example, the differences between the theoretical and actual values of the specifications. (author) [es

  12. Measurement-based characterization of multipixel avalanche photodiodes for scintillating detectors

    CERN Document Server

    Dziewiecki, M

    2012-01-01

    Multipixel avalanche photodiodes (MAPD) are recently gaining popularity in high energy physics experiments as an attractive replacement for photomultiplier tubes, which have been extensively used for many years as a part of various scintillating detectors. Their low price, small dimensions and another features facilitating their use (like mechanical shock resistance, magnetic field immunity or moderate supply voltage) make the MAPDs a good choice for commercial use as well, what is reflected in growing number of producers as well as MAPD models available on the market. This dissertation presents Author’s experience with MAPD measurements and modelling, gained during his work on the T2K (Tokai-to-Kamioka) long-baseline neutrino experiment, carried out by an international collaboration in Japan. First, operation principle of the MAPD, definitions of various parameters and measurement methods are discussed. Then, a device for large-scale MAPD measurements and related data processing methods are described. Fina...

  13. The evaluation of a large-area hybrid photodiode for PET applications

    Energy Technology Data Exchange (ETDEWEB)

    Ott, R.J. E-mail: bob@icr.ac.uk; White, L.; Duxbury, D.; Fowler, R.; Herbert, D.; Ramsden, D

    2003-11-01

    A large-area hybrid photodiode interfaced to scintillating crystals is being evaluated to determine its application as part of a positron camera dedicated to imaging the breast, positron emission mammography (PEM). The sensitive photocathode area of the HPD is 72 mm in diameter and the diode is divided into 61 separate pixels. The principal of the detector for PEM will be the use of analogue information from the individual diodes to provide 2D positional information. Simulations of the device attached to a low noise amplifier system show that a spatial resolution of a few mm should be possible. Estimates of the spatial resolution, sensitivity and energy resolution from different scintillating crystals detecting annihilation photons will be presented.

  14. Impulse response measurement in the HgCdTe avalanche photodiode

    Science.gov (United States)

    Singh, Anand; Pal, Ravinder

    2018-04-01

    HgCdTe based mid-wave infrared focal plane arrays (MWIR FPAs) are being developed for high resolution imaging and range determination of distant camouflaged targets. Effect of bandgap grading on the response time in the n+/ν/p+ HgCdTe electron avalanche photodiode (e-APD) is evaluated using impulse response measurement. Gain normalized dark current density of 2 × 10-9 A/cm2 at low reverse bias for passive mode and 2 × 10-4 A/cm2 at -8 V for active mode is measured in the fabricated APD device, yielding high gain bandwidth product of 2.4 THZ at the maximum gain. Diffusion of carriers is minimized to achieve transit time limited impulse response by introducing composition grading in the HgCdTe epilayer. The noise equivalent photon performance less than one is achievable in the FPA that is suitable for active cum passive imaging applications.

  15. Development and performance of a deep-diffused, planar construction avalanche photodiode

    CERN Document Server

    Gramsch, E; Ferrer, J

    2002-01-01

    A deep-diffused, large-area avalanche photodiode (APD) without bevel has been designed and built for use in low-light level applications. 2 and 3 mm diameter active area APDs have been built using standard planar technology for silicon devices, and a gain of 6 is obtained at 1300 V. The dark current is dependent on external voltage and it is only 50 to 80 nA below breakdown, which is much lower than standard bevel edge devices. The energy resolution of a sup 1 sup 3 sup 7 Cs source with an APD coupled to a CsI (Tl) scintillator was 14.5%. We have also performed simulations of the gain and breakdown voltage that correlate well with the results. (Author)

  16. p-Cu2O-shell/n-TiO2-nanowire-core heterostucture photodiodes

    Directory of Open Access Journals (Sweden)

    Hsueh Ting-Jen

    2011-01-01

    Full Text Available Abstract This study reports the deposition of cuprous oxide [Cu2O] onto titanium dioxide [TiO2] nanowires [NWs] prepared on TiO2/glass templates. The average length and average diameter of these thermally oxidized and evaporated TiO2 NWs are 0.1 to 0.4 μm and 30 to 100 nm, respectively. The deposited Cu2O fills gaps between the TiO2 NWs with good step coverage to form nanoshells surrounding the TiO2 cores. The p-Cu2O/n-TiO2 NW heterostructure exhibits a rectifying behavior with a sharp turn-on at approximately 0.9 V. Furthermore, the fabricated p-Cu2O-shell/n-TiO2-nanowire-core photodiodes exhibit reasonably large photocurrent-to-dark-current contrast ratios and fast responses.

  17. Properties of avalanche photodiodes for applications in high energy physics, astrophysics and medical imaging

    CERN Document Server

    Renker, D

    2002-01-01

    Avalanche Photodiodes (APDs) with reverse structure and very good sensitivity to visible light are the first time used in large scale for the readout of PbWO sub 4 crystals in the barrel of the CMS electromagnetic calorimeter. They have to operate in a rather hostile environment, in a magnetic field of 4 T and under unprecedented radiation levels for a minimum of 10 years with a failure rate substantially lower than 1%. After an extensive R and D work the mass production started recently. The properties of the APDs and the possibilities for modifications of some parameters for other applications will be discussed. Particularly interesting is the status of APD arrays and the prospects of their development for PET scanners and for X-ray imaging.

  18. Analytical high-speed countercurrent chromatography with photodiode array detection (HSCCC-UV)

    Energy Technology Data Exchange (ETDEWEB)

    Schaufelberger, D.E. (Chemical Synthesis and Analysis Lab., National Cancer Institute, Frederick Center Research Facility, Frederick, MD (US))

    1989-01-01

    The use of analytical high-speed countercurrent chromatography with a photodiode array detector (HSCCC-UV) is described. Reduction of detector noise caused by non-retained stationary phase was achieved by adding an auxiliary solvent (MeOH, isoPrOH) by means of a post-column reactor. The technique was applied to the separation of aromatic compounds and natural products in Hexane-MeOH-H{sub 2} and CHCl{sub 3}-MeOH-H{sub 2}O solvent systems. On-line recorded UV spectra were almost identical to those obtained with pure standards in methanol. Spectra obtained by HSCCC-UV can be used to characterize separated compounds and facilitate peak identification.

  19. Nondestructive assessment of internal quality of Gannan navel orange by photodiode array spectrometer

    Science.gov (United States)

    Sun, Xudong; Zhou, Huamao; Zhou, Wenchao; Liu, Yande

    2008-12-01

    The photodiode array (PDA) spectrometer combined with partial least square (PLS) was developed to rapid measure the internal quality indices of Gannan navel orange nondestructively in the wavelength range of 550-950nm. The original spectra were processed by standard normal variate (SNV) and Savitzky-Golay (SG) smooth method. The optimal models of internal quality indices were determined after different spectral windows chosen. The optimal model of soluble solids content (SSC), total acidity (TA) and ratio of them were developed with RMSECV = 0.5118Brix%, 0.0856% and 2.0617 by PLS method, respectively. The optimal spectral windows were 700-950nm, 600-750nm and 600-950nm for measuring internal indices nondestructively by PDA. The results illustrated that PDA with PLS method were a rapid tool to measure the internal quality indices of Gannan navel orange nondestructively.

  20. Linear Mode HgCdTe Avalanche Photodiodes for Photon Counting Applications

    Science.gov (United States)

    Sullivan, William, III; Beck, Jeffrey; Scritchfield, Richard; Skokan, Mark; Mitra, Pradip; Sun, Xiaoli; Abshire, James; Carpenter, Darren; Lane, Barry

    2015-01-01

    An overview of recent improvements in the understanding and maturity of linear mode photon counting with HgCdTe electron-initiated avalanche photodiodes is presented. The first HgCdTe LMPC 2x8 format array fabricated in 2011 with 64 micron pitch was a remarkable success in terms of demonstrating a high single photon signal to noise ratio of 13.7 with an excess noise factor of 1.3-1.4, a 7 ns minimum time between events, and a broad spectral response extending from 0.4 micron to 4.2 micron. The main limitations were a greater than 10x higher false event rate than expected of greater than 1 MHz, a 5-7x lower than expected APD gain, and a photon detection efficiency of only 50% when greater than 60% was expected. This paper discusses the reasons behind these limitations and the implementation of their mitigations with new results.