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Sample records for si nitride si

  1. Kinetics and thermodynamics of Si(111) surface nitridation in ammonia

    Science.gov (United States)

    Mansurov, Vladimir G.; Malin, Timur V.; Galitsyn, Yurij G.; Shklyaev, Alexander A.; Zhuravlev, Konstantin S.

    2016-05-01

    Kinetics and thermodynamics of Si(111) surface nitridation under an ammonia flux at different substrate temperatures are investigated by reflection high-energy electron diffraction. Two different stages of the nitridation process were revealed. The initial stage is the fast (within few seconds) formation of ordered two-dimensional SiN phase, occuring due to the topmost active surface Si atom (Sisurf) interaction with ammonia molecules. It is followed by the late stage consisting in the slow (within few minutes) amorphous Si3N4 phase formation as a result of the interaction of Si atoms in the lattice site (Siinc) with chemisorbed ammonia molecules. It was found that the ordered SiN phase formation rate decreases, as the temperature increases. The kinetic model of the initial stage was developed, in which the ordered SiN phase formation is the two-dimensional phase transition in the lattice gas with SiN cells. The enthalpy of the active surface Si atom generation on the clean Si(111) surface was estimated to be about 1.5 eV. In contrast, the amorphous Si3N4 phase formation is the normal (thermally activated) chemical process with the first-order kinetics, whose activation energy and pre-exponential factor are 2.4 eV and 108 1/s, respectively.

  2. Back scattering involving embedded silicon nitride (SiN) nanoparticles for c-Si solar cells

    Science.gov (United States)

    Ghosh, Hemanta; Mitra, Suchismita; Siddiqui, M. S.; Saxena, A. K.; Chaudhuri, Partha; Saha, Hiranmay; Banerjee, Chandan

    2018-04-01

    A novel material, structure and method of synthesis for dielectric light trapping have been presented in this paper. First, the light scattering behaviour of silicon nitride nanoparticles have been theoretically studied in order to find the optimized size for dielectric back scattering by FDTD simulations from Lumerical Inc. The optical results have been used in electrical analysis and thereby, estimate the effect of nanoparticles on efficiency of the solar cells depending on substrate thickness. Experimentally, silicon nitride (SiN) nanoparticles have been formed using hydrogen plasma treatment on SiN layer deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD). The size and area coverage of the nanoparticles were controlled by varying the working pressure, power density and treatment duration. The nanoparticles were integrated with partial rear contact c-Si solar cells as dielectric back reflector structures for the light trapping in thin silicon solar cells. Experimental results revealed the increases of current density by 2.7% in presence of SiN nanoparticles.

  3. Study of aluminum nitride precipitation in Fe- 3%Si steel

    Directory of Open Access Journals (Sweden)

    F.L. Alcântara

    2013-01-01

    Full Text Available For good performance of electrical steels it is necessary a high magnetic induction and a low power loss when submitted to cyclic magnetization. A fine dispersion of precipitates is a key requirement in the manufacturing process of Fe- 3%Si grain oriented electrical steel. In the production of high permeability grain oriented steel precipitate particles of copper and manganese sulphides and aluminium nitride delay normal grain growth during primary recrystallization, causing preferential growth of grains with Goss orientation during secondary recrystallization. The sulphides precipitate during the hot rolling process. The aluminium nitride particles are formed during hot rolling and the hot band annealing process. In this work AlN precipitation during hot deformation of a high permeability grain oriented 3%Si steel is examined. In the study, transfer bar samples were submitted to controlled heating, compression and cooling treatments in order to simulate a reversible hot rolling finishing. The samples were analyzed using the transmission electron microscope (TEM in order to identify the precipitates and characterize size distribution. Precipitate extraction by dissolution method and analyses by inductively coupled plasma optical emission spectrometry (ICP-OES were used to quantify the precipitation. The results allowed to describe the precipitation kinetics by a precipitation-time-temperature (PTT diagram for AlN formation during hot rolling.

  4. Si Passivation and Chemical Vapor Deposition of Silicon Nitride: Final Technical Report, March 18, 2007

    Energy Technology Data Exchange (ETDEWEB)

    Atwater, H. A.

    2007-11-01

    This report investigated chemical and physical methods for Si surface passivation for application in crystalline Si and thin Si film photovoltaic devices. Overall, our efforts during the project were focused in three areas: i) synthesis of silicon nitride thin films with high hydrogen content by hot-wire chemical vapor deposition; ii) investigation of the role of hydrogen passivation of defects in crystalline Si and Si solar cells by out diffusion from hydrogenated silicon nitride films; iii) investigation of the growth kinetics and passivation of hydrogenated polycrystalline. Silicon nitride films were grown by hot-wire chemical vapor deposition and film properties have been characterized as a function of SiH4/NH3 flow ratio. It was demonstrated that hot-wire chemical vapor deposition leads to growth of SiNx films with controllable stoichiometry and hydrogen.

  5. Potential of P-doped carbon nanocone and Si-doped boron nitride ...

    Indian Academy of Sciences (India)

    22

    Si-doped boron nitride nanocone (BNNC) by density functional theory were investigated. The adsorption energies of P and Si on surfaces of CNC and BNNC were -293.1 and -325.7 kcal/mol, respectively. The decomposition of CNC-P-N2O and BNNC-Si-N2O and reduction of CNC-P-. O* and BNNC-Si-O* by CO molecule ...

  6. Argon plasma treatment of silicon nitride (SiN) for improved antireflection coating on c-Si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, Hemanta; Mitra, Suchismita; Saha, Hiranmay; Datta, Swapan Kumar; Banerjee, Chandan, E-mail: chandanbanerjee74@gmail.com

    2017-01-15

    Highlights: • Antireflection properties of argon plasma treated silicon nitride layer and its effect on crystalline silicon solar cell. • The reduction in reflection due to the formation of a silicon oxynitride/silicon nitride double layer. • EQE reveals a relative increase of 2.72% in J{sub sc} and 4.46% in conversion efficiency. - Abstract: Antireflection properties of argon plasma treated silicon nitride layer and its effect on crystalline silicon solar cell is presented here. Hydrogenated silicon nitride (a-SiN:H) layer has been deposited on a silicon substrate by Plasma Enhanced Chemical Vapour Deposition (PECVD) using a mixture of silane (SiH{sub 4}), ammonia (NH{sub 3}) and hydrogen (H{sub 2}) gases followed by a argon plasma treatment. Optical analysis reveals a significant reduction in reflectance after argon plasma treatment of silicon nitride layer. While FESEM shows nanostructures on the surface of the silicon nitride film, FTIR reveals a change in Si−N, Si−O and N−H bonds. On the other hand, ellipsometry shows the variation of refractive index and formation of double layer. Finally, a c-Si solar cell has been fabricated with the said anti-reflection coating. External quantum efficiency reveals a relative increase of 2.72% in the short circuit current density and 4.46% in conversion efficiency over a baseline efficiency of 16.58%.

  7. Scanning tunneling microscopy of initial nitridation processes on oxidized Si(100) surface with radical nitrogen

    CERN Document Server

    Takahashi, R; Ikeda, H; Sakashita, M; Sakai, A; Yasuda, Y; Nakatsuka, O; Zaima, S

    2003-01-01

    We have investigated the initial nitridation processes on oxidized Si(100) with radical nitrogen at a substrate temperature of 850degC using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). It is found that the thin oxide layer suppresses the changes of original Si step structures during nitridation, and this effect critically depends on the growth conditions of the oxide layer. Comparison of the nitride island morphology to the case of the clean surface suggests that the migration of the precursor during nitridation is suppressed by the oxygen in the layer. (author)

  8. Potential of P-doped carbon nanocone and Si-doped boron nitride ...

    Indian Academy of Sciences (India)

    22

    The mechanisms of N2O reduction via CO on surfaces of P-doped carbon nanocone (CNC) and. Si-doped boron nitride nanocone (BNNC) by density functional theory were investigated. The adsorption energies of P and Si on surfaces of CNC and BNNC were -293.1 and -325.7 kcal/mol, respectively. The decomposition of ...

  9. Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment

    International Nuclear Information System (INIS)

    Xian-Gao, Zhang; Kun-Ji, Chen; Zhong-Hui, Fang; Xin-Ye, Qian; Guang-Yuan, Liu; Xiao-Fan, Jiang; Zhong-Yuan, Ma; Jun, Xu; Xin-Fan, Huang; Jian-Xin, Ji; Fei, He; Kuang-Bao, Song; Jun, Zhang; Hui, Wan; Rong-Hua, Wang

    2010-01-01

    A nonvolatile memory device with nitrided Si nanocrystals embedded in a Boating gate was fabricated. The uniform Si nanocrystals with high density (3 × 10 11 cm −2 ) were deposited on ultra-thin tunnel oxide layer (∼ 3 nm) and followed by a nitridation treatment in ammonia to form a thin silicon nitride layer on the surface of nanocrystals. A memory window of 2.4 V was obtained and it would be larger than 1.3 V after ten years from the extrapolated retention data. The results can be explained by the nitrogen passivation of the surface traps of Si nanocrystals, which slows the charge loss rate. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  10. Synthesis of boron nitride nanotubes with SiC nanowire as template

    International Nuclear Information System (INIS)

    Zhong, B.; Song, L.; Huang, X.X.; Wen, G.W.; Xia, L.

    2011-01-01

    Highlights: → Boron nitride nanotubes (BNNTs) have been fabricated using SiC nanowires as template. → SiC nanowires could be effectively etched out by the vapors decomposed from ammonia borane, leading to the formation of BNNTs. → A template self-sacrificing mechanism is responsible for the formation of BNNTs. -- Abstract: A novel template method for the preparation of boron nitride nanotubes (BNNTs) using SiC nanowire as template and ammonia borane as precursor is reported. We find out that the SiC nanowires could be effectively etched out by the vapors decomposed from ammonia borane, leading to the formation of BNNTs. The as-prepared products are well characterized by means of complementary analytical techniques. A possible formation mechanism is disclosed. The method developed here paves the way for large scale production of BNNTs.

  11. Characterization of polycrystalline silicon-oxide-nitride-oxide-silicon devices on a SiO2 or Si3N4 buffer layer

    Science.gov (United States)

    Lee, Sang-Youl; Oh, Jae-Sub; Yang, Seung-Dong; Yun, Ho-Jin; Jeong, Kwang-Seok; Kim, Yu-Mi; Lee, Hi-Deok; Lee, Ga-Won

    2013-10-01

    Silicon-oxide-nitride-oxide-silicon (SONOS) memory devices were fabricated from polycrystalline silicon (poly-Si) using the solid phase crystallization (SPC) method for use in a low-power system-on-panel (SOP) display. In these poly-Si SONOS memories, oxide or nitride was used as a buffer layer. The electrical characteristics, such as the threshold voltage ( V T ), subthreshold slope ( SS) and transconductance ( g m ), were determined for each SONOS device. To interpret the characteristics of both poly-Si devices, x-ray diffraction (XRD) measurements and flicker noise analysis were conducted. The results show that the poly-Si SONOS on the oxide layer has better electrical, memory characteristics, such as turn-on speed and g m , program/erase, endurance and data retention than that on the nitride layer. From the XRD measurements, it is shown that the grain size of the poly-Si on the oxide layer is larger than that on the nitride layer. From the flicker noise analysis, the poly-Si device on oxide was shown to have less traps or defects in the channel layer than that on nitride.

  12. Physical properties of the wide band gap II-IV nitride MgSiN2

    Science.gov (United States)

    Råsander, Mikael; Quirk, James; Moram, Michelle

    The Group II-IV nitride semiconductors are emerging as promising alternatives to III-nitrides in ultraviolet LED applications. These materials have wurtzite-derived orthorhombic crystal structures and can be obtained by substituting pairs of Group III atoms in a III-nitride for a single Group II atom and a single Group IV atom. Here we will focus on MgSiN2, which is the equivalent II-IV nitride to wurtzite AlN. A detailed comparison of the properties obtained by first principles calculations and experiment of these two systems will be performed. It will be shown that MgSiN2 has a large indirect band gap of similar size to the direct band gap of AlN, while having a crystal size which is intermediate between AlN and GaN. MgSiN2 should therefore facilitate better lattice matching during film growth compared to AlN, and therefore constitutes a good candidate material to be used in novel high efficiency UV-LEDs.

  13. On the temperature dependence of the photoconductivity of amorphous silicon nitride (a-Si Nx: H)

    International Nuclear Information System (INIS)

    Tessler, L.R.; Alvarez, F.; Chambouleyron, I.

    1984-01-01

    Experimental results on the photoconducticity of amorphous hydrogenated silicon nitride a-SiNx: H prepared from plasma decomposition of a gaseus mixture of silane and nitrogen ([Si H 4 ]/[N 2 ] ∼ 0.33) are presented. The material is deposited in a capacitively coupled glow discharge system and nitrogen content was continuously increased by increasing the RF power dissipated in the plasma. Studies of the photocurrent as a function of temperature as a function of temperature and lig ht intensities are reported. (Author) [pt

  14. Microstructure characterization of fluidized bed nitrided Fe–Si and ...

    Indian Academy of Sciences (India)

    Unknown

    nitrogen atoms and chemical surface modifications produce structural modifications leading to substantial improve- ments in the properties of the material (Billard et al 1990;. Kooi et al 1994; Boettger et al 1997; Niederdrenk et al. 1996; Schaaf 1998). The compound layer resulting from the nitriding treatment meets some of ...

  15. Effects of Interface Coating and Nitride Enhancing Additive on Properties of Hi-Nicalon SiC Fiber Reinforced Reaction-Bonded Silicon Nitride Composites

    Science.gov (United States)

    Bhatt, Ramakrishana T.; Hull, David R.; Eldridge, Jeffrey I.; Babuder, Raymond

    2000-01-01

    Strong and tough Hi-Nicalon SiC fiber reinforced reaction-bonded silicon nitride matrix composites (SiC/ RBSN) have been fabricated by the fiber lay-up approach. Commercially available uncoated and PBN, PBN/Si-rich PBN, and BN/SiC coated SiC Hi-Nicalon fiber tows were used as reinforcement. The composites contained approximately 24 vol % of aligned 14 micron diameter SiC fibers in a porous RBSN matrix. Both one- and two-dimensional composites were characterized. The effects of interface coating composition, and the nitridation enhancing additive, NiO, on the room temperature physical, tensile, and interfacial shear strength properties of SiC/RBSN matrix composites were evaluated. Results indicate that for all three coated fibers, the thickness of the coatings decreased from the outer periphery to the interior of the tows, and that from 10 to 30 percent of the fibers were not covered with the interface coating. In the uncoated regions, chemical reaction between the NiO additive and the SiC fiber occurs causing degradation of tensile properties of the composites. Among the three interface coating combinations investigated, the BN/SiC coated Hi-Nicalon SiC fiber reinforced RBSN matrix composite showed the least amount of uncoated regions and reasonably uniform interface coating thickness. The matrix cracking stress in SiC/RBSN composites was predicted using a fracture mechanics based crack bridging model.

  16. Oxide-nitride-oxide dielectric stacks with Si nanoparticles obtained by low-energy ion beam synthesis

    International Nuclear Information System (INIS)

    Ioannou-Sougleridis, V; Dimitrakis, P; Vamvakas, V Em; Normand, P; Bonafos, C; Schamm, S; Mouti, A; Assayag, G Ben; Paillard, V

    2007-01-01

    Formation of a thin band of silicon nanoparticles within silicon nitride films by low-energy (1 keV) silicon ion implantation and subsequent thermal annealing is demonstrated. Electrical characterization of metal-insulator-semiconductor capacitors reveals that oxide/Si-nanoparticles-nitride/oxide dielectric stacks exhibit enhanced charge transfer characteristics between the substrate and the silicon nitride layer compared to dielectric stacks using unimplanted silicon nitride. Attractive results are obtained in terms of write/erase memory characteristics and data retention, indicating the large potential of the low-energy ion-beam-synthesis technique in SONOS memory technology

  17. Nanostructures based in boro nitride thin films deposited by PLD onto Si/Si{sub 3}N{sub 4}/DLC substrate

    Energy Technology Data Exchange (ETDEWEB)

    Roman, W S; Riascos, H [Grupo Plasma, Laser y Aplicaciones, Universidad Tecnologica de Pereira (Colombia); Caicedo, J C [Grupo de PelIculas Delgadas, Universidad del Valle, Cali (Colombia); Ospina, R [Laboratorio de Plasma, Universidad Nacional de Colombia, sede Manizales (Colombia); Tirado-MejIa, L, E-mail: hriascos@utp.edu.c [Laboratorio de Optoelectronica, Universidad del Quindio (Colombia)

    2009-05-01

    Diamond-like carbon and boron nitride were deposited like nanostructered bilayer on Si/Si{sub 3}N{sub 4} substrate, both with (100) crystallographic orientation, these films were deposited through pulsed laser technique (Nd: YAG: 8 Jcm{sup -2}, 9ns). Graphite (99.99%) and boron nitride (99.99%) targets used to growth the films in argon atmosphere. The thicknesses of bilayer were determined with a perfilometer, active vibration modes were analyzed using infrared spectroscopy (FTIR), finding bands associated around 1400 cm{sup -1} for B - N bonding and bands around 1700 cm{sup -1} associated with C=C stretching vibrations of non-conjugated alkenes and azometinic groups, respectively. The crystallites of thin films were analyzed using X-ray diffraction (XRD) and determinated the h-BN (0002), alpha-Si{sub 3}N{sub 4} (101) phases. The aim of this study is to relate the dependence on physical and chemical characteristics of the system Si/Si{sub 3}N{sub 4}/DLC/BN with gas pressure adjusted at the 1.33, 2.67 and 5.33 Pa values.

  18. Synthesis and structure of Na-Li-Si-Al-P-O-N glasses prepared by melt nitridation using NH3

    International Nuclear Information System (INIS)

    Kidar, A.; Pomeroy, M.J.; Hampshire, S.; Mercier, C.; Leriche, A.; Revel, B.

    2012-01-01

    Na-Li-Si-Al-P-O-N glasses have been prepared by nitridation of a pre-synthesized Na 2 O-Li 2 O-SiO 2 -P 2 O 5 -Al 2 O 3 glass under anhydrous ammonia. Nitrogen for oxygen substitution increases the network connectivity leading to increases in microhardness and glass transition temperature. Raman and 31 P MAS-NMR spectroscopy indicate sequential nitridation reactions forming PO 3 N and PO 2 N 2 species. The data collected so far show no evidence of N/O substitutions in the silicate sub-network. (authors)

  19. Epitaxial silicon dots self-assembled on aluminum nitride/Si (111).

    Science.gov (United States)

    Cheng, Yana; Beresford, Roderic

    2013-02-13

    Si nanoscale dots are synthesized on AlN/Si(111) by molecular beam epitaxy. A dot density of 2.2 × 10(11) cm(-2) with a mean radius of 5.6 ± 2.8 nm is obtained in Volmer-Weber growth mode. A double Si coverage leads to a decrease in dot density and increase in dot size. The dot orientations are [11[overline]0](Si) (or [1[overline]10](Si))//[112[overline]0](AlN) and (111)(Si)//(0001)(AlN), which are similar (or identical) to the orientation of AlN relative to the Si substrate.

  20. Matrix density effects on the mechanical properties of SiC fiber-reinforced silicon nitride matrix properties

    Science.gov (United States)

    Bhatt, Ramakrishna T.; Kiser, Lames D.

    1990-01-01

    The room temperature mechanical properties were measured for SiC fiber reinforced reaction-bonded silicon nitride composites (SiC/RBSN) of different densities. The composites consisted of approx. 30 vol percent uniaxially aligned 142 micron diameter SiC fibers (Textron SCS-6) in a reaction-bonded Si3N4 matrix. The composite density was varied by changing the consolidation pressure during RBSN processing and by hot isostatically pressing the SiC/RBSN composites. Results indicate that as the consolidation pressure was increased from 27 to 138 MPa, the average pore size of the nitrided composites decreased from 0.04 to 0.02 microns and the composite density increased from 2.07 to 2.45 gm/cc. Nonetheless, these improvements resulted in only small increases in the first matrix cracking stress, primary elastic modulus, and ultimate tensile strength values of the composites. In contrast, HIP consolidation of SiC/RBSN resulted in a fully dense material whose first matrix cracking stress and elastic modulus were approx. 15 and 50 percent higher, respectively, and ultimate tensile strength values were approx. 40 percent lower than those for unHIPed SiC/RBSN composites. The modulus behavior for all specimens can be explained by simple rule-of-mixture theory. Also, the loss in ultimate strength for the HIPed composites appears to be related to a degradation in fiber strength at the HIP temperature. However, the density effect on matrix fracture strength was much less than would be expected based on typical monolithic Si3N4 behavior, suggesting that composite theory is indeed operating. Possible practical implications of these observations are discussed.

  1. Analysis of Carrier Traps in Si3N4 in Oxide/Nitride/Oxide for Metal/Oxide/Nitride/Oxide/Silicon Nonvolatile Memory

    Science.gov (United States)

    Aozasa, Hiroshi; Fujiwara, Ichiro; AkihiroNakamura, AkihiroNakamura; Komatsu, Yasutoshi

    1999-03-01

    The energy level, density and attempt to escape frequency ofcarrier traps in an Si3N4 film in tunnel oxide/nitride/oxide(ONO) multilayer for metal/oxide/nitride/oxide/silicon (MONOS)nonvolatile memory are investigated by discharging current transientspectroscopy (DCTS). To analyze the electrical properties of carriertraps observed through DCTS, a new model including the tunnelingprobability of the tunnel oxide film between the Si3N4 filmand an Si substrate was proposed. As a result, the electron traps inthe Si3N4 film, which are assumed to be related to thethreshold voltage decay, i.e. data retention, were found for the firsttime. The energy level of the electron traps in the Si3N4film in the ONO multilayer was 0.8 0.9 eV from the conduction bandand the density was 1 5×1018 cm-3. Theattempt to escape frequency of 2×1014 s-1 was alsoobtained. The energy level of the hole traps and its density were0.8 0.9 eV from the top of the valence band and 1 4×1018 cm-3, respectively. The magnitude of the trap density obtained from DCTS shows good agreement with that obtained from memory hysteresis characteristics. These results indicate that their carrier traps are amphoteric traps.

  2. Study of the stepwise oxidation and nitridation of Si(111): Electron stimulated desorption, Auger spectroscopy, and electron loss spectroscopy

    International Nuclear Information System (INIS)

    Knotek, M.L.; Houston, J.E.

    1983-01-01

    Electron stimulated desorption, Auger line shape analysis, and electron loss spectroscopy measurements are reported for the electron activated stepwise oxidation and nitridation of the Si(111) surface. In ESD it is found that appreciable levels of surface hydrogen can be present which can lead to hydroxyl formation upon oxidation. The hydroxyl rich films are unstable in an electron beam, while surfaces oxidized with activated oxygen, where no OH is formed, are much more stable. The nitrided films are always stable in the electron beam even though there too hydrogen is always found. On the OH-free oxide, ESD shows two chemically distinct O species, one thought to be SiO 2 and the other adsorbed O 2 or a chemical intermediate. The Si(L 23 VV) Auger spectra for both the oxide and nitride are treated by background subtraction, integration, deconvolution, and subtraction of the elemental part of the spectrum, as a function of reaction time over a well controlled series of reaction steps. The Auger spectra for both oxide and nitride films suggest that in the earliest stages of reaction, the reacted film is made up of low coordination intermediates which gradually evolve to the stoichiometric compound as the coordination increases. In loss spectroscopy, both the Si(L 23 ) core loss and the near elastic loss were measured. The L 23 core loss shows the same gradual evolution to the oxide seen in the Auger results, with an intermediate oxidation state dominating in the early stages of reaction. The near elastic loss spectra, by contrast, quickly saturate in the early stages of reaction to the final oxide spectrum which is characterized by features both of the full oxide and a suboxide. Similar results are found for the nitride

  3. Effect of negative bias on TiAlSiN coating deposited on nitrided Zircaloy-4

    Science.gov (United States)

    Jun, Zhou; Zhendong, Feng; Xiangfang, Fan; Yanhong, Liu; Huanlin, Li

    2018-01-01

    TiAlSiN coatings were deposited on the nitrided Zircaloy-4 by multi-arc ion plating at -100 V, -200 V and -300 V. In this study, the high temperature oxidation behavior of coatings was tested by a box-type resistance furnace in air for 3 h at 800 °C; the macro-morphology of coatings was observed and analyzed by a zoom-stereo microscope; the micro-morphology of coatings was analyzed by a scanning electron microscopy (SEM), and the chemical elements of samples were analyzed by an energy dispersive spectroscopy(EDS); the adhesion strength of the coating to the substrate was measured by an automatic scratch tester; and the phases of coatings were analyzed by an X-ray diffractometer(XRD). Results show that the coating deposited at -100 V shows better high temperature oxidation resistance behavior, at the same time, Al elements contained in the coating is of the highest amount, meanwhile, the adhesion strength of the coating to the substrate is the highest, which is 33N. As the bias increases, high temperature oxidation resistance behavior of the coating weakens first and then increases, the amount of large particles on the surface of the coating increases first and then decreases whereas the density of the coating decreases first and then increases, and adhesion strength of the coating to the substrate increases first and then weakens. The coating's quality is relatively poor when the bias is -200 V.

  4. Control of active nitrogen species used for PA-MBE growth of group III nitrides on Si

    Science.gov (United States)

    Ohachi, Tadashi; Yamabe, Nobuhiko; Yamamoto, Yuka; Wada, Motoi; Ariyada, Osamu

    2011-03-01

    A new spiral parallel mesh electrode (PME) is presented to control active nitrogen species in plasma-assisted molecular beam epitaxial (PA-MBE) growth of group III nitrides and their alloys. Direct flux of active nitrogen from radio frequency inductive coupled plasma (rf-ICP) discharge was able to be measured using a mesh electrode for filtering charge particles and electron emission due to the self-ionization of nitrogen atoms on a negatively biased electrode. In situ measurement of direct nitrogen atom fluxes using the spiral PME during PA-MBE growth of GaN and AlN on Si substrates is investigated. A linear rf power dependence of direct flux of active species on atoms such as nitrogen (N+N*), where N and N* were ground and excited atoms, respectively, from a rf-ICP was confirmed by the spiral PME. An indirect flux of nitrogen adsorbed (ADS) atoms (N+N*) during discharge was also monitored by the spiral PME and received influence of the wall surface of the growth chamber. ADS nitrogen atoms are able to be used for nitridation of Si surface to grow a double buffer layer (DBL) AlN/β-Si3N4/Si.

  5. Silicon nitride and YMgSiAlON glass study by mechanical spectroscopy

    International Nuclear Information System (INIS)

    Doen, B.; Gadaud, P.

    1996-01-01

    Si 3 N 4 /TiN and YMgSiAlON/SiC composites have been studied by isothermal mechanical spectroscopy over a large frequency range. Internal friction curves obtained for the composite Si 3 N 4 -TiN(30% vol)-Al 2 O 3 , Y 2 O 3 (7.5% vol) exhibit a thermally activated pseudo peak superposed on a non purely exponential background. We can assume that this maximum is due to relaxations in the compressed intergranular glassy films. The apparent dynamical parameters deduced from its shift (11.2 eV and 3.10 -45 s) are unusual as observed in amorphous materials. YMgSiAlON glass has a composition very similar to the one of the intergranular phase of Si 3 N 4 /TiN composite. The damping curves obtained for YMgSiAlON/SiC composites above the glass transition temperature are pure exponential backgrounds. An original analysis of these curves allows to determine an activation energy of about 3.6 eV. This value is more realistic for an elementary diffusion mechanism in a glass near Tg. (orig.)

  6. Nitride Conversion: A Novel Approach to c-Si Solar Cell Metallization

    Science.gov (United States)

    Hook, David Henry

    Metallization of commercial-grade c-Si solar cells is currently accomplished by screen-printing fine lines of a Ag/PbO-glass paste amalgam (Ag-frit) onto the insulating SiNx antireflective coating (ARC) that lies atop the shallow n-type emitter layer of the cell. Upon annealing, the glass etches SiNx and permits the crystallization of Ag near the electrically-active emitter interface, thus contacting the cell. While entirely functional, the contact interface produced by Ag-frit metallization is non-ideal, and Ag metal itself is expensive; its use adds to overall solar cell costs. The following work explores the use of Ti-containing alloys as metallization media for c-Si solar cells. There is a -176 kJ [mol N]--1 free energy change associated with the conversion of Si3N4 to TiN. By combining Ti with a low-melting point metal, this reaction can take place at temperatures as low as 750°C in the bulk. Combinations of Ti with Cu, Sn, Ag, and Pb ternary and binary systems are investigated. On unmetallized, c-Si textured solar cells it is shown that 900 nm of stoichiometric Ti6Sn 5 is capable of converting the SiNx ARC to TiN and Ti5Si3, both of which are conducting materials with electrically low-barriers to contact with n-type Si. Alongside electron microscopy, specific contact resistivity (rho c) measurements are used to determine the interfacial quality of TiN/Ti5Si3 contacts to n-Si. Circular transmission line model (CTLM) measurements are utilized for the characterization of reacted Ag0.05Cu0.69Ti0.26, Sn0.35 Ag0.27Ti0.38, and Ti6Sn5 contacts. rhoc values as low as 26 muOcm 2 are measured for reacted Ti6Sn5-SiN x on conventional c-Si solar cells. This value is approximately 2-3 orders of magnitude lower than rhoc of contacts produced by traditional Ag-frit metallization. Viable 1x1 cm, Ti6Sn5-metallized solar cells on 5x5 cm substrates were fabricated through a collaboration with the Georgia Institute of Technology (GA Tech). Front-side metallization was performed

  7. NMR and NQR study of Si-doped (6,0) zigzag single-walled aluminum nitride nanotube as n or P-semiconductors.

    Science.gov (United States)

    Baei, Mohammad T; Peyghan, Ali Ahmadi; Tavakoli, Khadijeh; Babaheydari, Ali Kazemi; Moghimi, Masoumeh

    2012-09-01

    Density functional theory (DFT) calculations were performed to investigate the electronic structure properties of pristine and Si-doped aluminum nitride nanotubes as n or P-semiconductors at the B3LYP/6-31G* level of theory in order to evaluate the influence of Si-doped in the (6,0) zigzag AlNNTs. We extended the DFT calculation to predict the electronic structure properties of Si-doped aluminum nitride nanotubes, which are very important for production of solid-state devices and other applications. To this aim, pristine and Si-doped AlNNT structures in two models (Si(N) and Si(Al)) were optimized, and then the electronic properties, the isotropic (CS(I)) and anisotropic (CS(A)) chemical shielding parameters for the sites of various (27)Al and (14)N atoms, NQR parameters for the sites of various of (27)Al and (14)N atoms, and quantum molecular descriptors were calculated in the optimized structures. The optimized structures, the electronic properties, NMR and NQR parameters, and quantum molecular descriptors for the Si(N) and Si(Al) models show that the Si(N) model is a more reactive material than the pristine or Si(Al) model.

  8. Silicon nitride-aluminum oxide solid solution (SiAION) formation and densification by pressure sintering

    Science.gov (United States)

    Yeh, H. C.; Sanders, W. A.; Fiyalko, J. L.

    1975-01-01

    Stirred-ball-mill-blended Si3N4 and Al2O3 powders were pressure sintered in order to investigate the mechanism of solid solution formation and densification in the Si3N4-Al2O3 system. Powder blends with Si3N4:Al2O3 mole ratios of 4:1, 3:2, and 2:3 were pressure sintered at 27.6-MN/sq m pressure at temperatures to 17000 C (3090 F). The compaction behavior of the powder blends during pressure sintering was determined by observing the density of the powder compact as a function of temperature and time starting from room temperature. This information, combined with the results of X-ray diffraction and metallographic analyses regarding solutioning and phase transformation phenomena in the Si3N4-Al2O3 system, was used to describe the densification behavior.

  9. Enhancement of toughness and wear resistance in boron nitride nanoplatelet (BNNP) reinforced Si3N4 nanocomposites

    Science.gov (United States)

    Lee, Bin; Lee, Dongju; Lee, Jun Ho; Ryu, Ho Jin; Hong, Soon Hyung

    2016-06-01

    Ceramics have superior hardness, strength and corrosion resistance, but are also associated with poor toughness. Here, we propose the boron nitride nanoplatelet (BNNP) as a novel toughening reinforcement component to ceramics with outstanding mechanical properties and high-temperature stability. We used a planetary ball-milling process to exfoliate BNNPs in a scalable manner and functionalizes them with polystyrene sulfonate. Non-covalently functionalized BNNPs were homogeneously dispersed with Si3N4 powders using a surfactant and then consolidated by hot pressing. The fracture toughness of the BNNP/Si3N4 nanocomposite increased by as much as 24.7% with 2 vol.% of BNNPs. Furthermore, BNNPs enhanced strength (9.4%) and the tribological properties (26.7%) of the ceramic matrix. Microstructural analyzes have shown that the toughening mechanisms are combinations of the pull-out, crack bridging, branching and blunting mechanisms.

  10. SI Notes.

    Science.gov (United States)

    Nelson, Robert A.

    1983-01-01

    Discusses legislation related to SI (International Systems of Units) in the United States. Indicates that although SI metric units have been officially recognized by law in the United States, U.S. Customary Units have never received a statutory basis. (JN)

  11. Oxidation effects on the mechanical properties of SiC fiber-reinforced reaction-bonded silicon nitride matrix composites

    Science.gov (United States)

    Bhatt, Ramakrishna T.

    1989-01-01

    The room temperature mechanical properties of SiC fiber reinforced reaction bonded silicon nitride composites were measured after 100 hrs exposure at temperatures to 1400 C in nitrogen and oxygen environments. The composites consisted of approx. 30 vol percent uniaxially aligned 142 micron diameter SiC fibers in a reaction bonded Si3N4 matrix. The results indicate that composites heat treated in a nitrogen environment at temperatures to 1400 C showed deformation and fracture behavior equivalent to that of the as-fabricated composites. Also, the composites heat treated in an oxidizing environment beyond 400 C yielded significantly lower tensile strength values. Specifically in the temperature range from 600 to 1000 C, composites retained approx. 40 percent of their as-fabricated strength, and those heat treated in the temperatures from 1200 to 1400 C retained 70 percent. Nonetheless, for all oxygen heat treatment conditions, composite specimens displayed strain capability beyond the matrix fracture stress; a typical behavior of a tough composite.

  12. Zr N and Zr O{sub 2} production by zirconium carbon nitridation (Zr Si O{sub 4}); Obtencion de Zr N y Zr O{sub 2} por carbonitruration de circon (Zr Si O{sub 4})

    Energy Technology Data Exchange (ETDEWEB)

    Mazzoni, A.D.; Aglietti, E.F. [Centro de Tecnologia de Recursos Minerales y Ceramica, Buenos Aires (Argentina)

    1997-12-31

    Structural ceramics based on nitrides, oxynitrides like, Zr N-Si{sub 3} N{sub 4} and Zr O{sub 2} Si{sub 2} O N{sub 2} have good thermal and mechanical properties, with curves in technological applications. Many obtention methods are propose, but carbonitriding reactions (carbon reduction and simultaneous nitriding) of zircon (Zr O{sub 2} Si O{sub 2}) may be interest because a low cost raw material is used. In this work the carbonitriding of zircon and the principal reaction conditions: carbon quantity, N{sub 2} flow, temperature and reaction time are studied. The phases formed were followed using XRD and the weight loss of the samples. The final products were: Zr N with low content of Si C and/or Si{sub 3} N{sub 4} or the monoclinic form of Zr O{sub 2}. The products be obtained can be predicted according to the reaction conditions employed. During the reaction Si O{sub (}g{sub )} loss is observed and silica can be completely eliminated if reaction conditions are adjusted. (author) 4 refs., 2 figs.

  13. Photoemission and low energy electron microscopy study on the formation and nitridation of indium droplets on Si (111)7 × 7 surfaces

    International Nuclear Information System (INIS)

    Qi, B.; Ólafsson, S.; Göthelid, M.; Gislason, H.P.; Agnarsson, B.

    2013-01-01

    The formation and nitridation of indium (In) droplets on Si (111)7 × 7, with regard to In droplet epitaxy growth of InN nanostructures, were studied using a spectroscopic photoemission and low energy electron microscopy, for the In coverages from 0.07 to 2.3 monolayer (ML). The results reveal that the In adatoms formed well-ordered clusters while keeping the Si (111)7 × 7 surface periodicity at 0.07 ML and a single √(3)×√(3) phase at 0.3 ML around 440–470 °C. At 0.82 ML, owing to the presence of structurally defect areas beside the 7 × 7 domains, 3-D In droplets evolved concomitantly with the formation of 4 × 1-In cluster chains, accompanied by a transition in surface electric property from semiconducting to metallic. Further increasing the In to 2.3 ML led to a moderate increase in number density and an appreciable lateral growth of the droplets, as well as the multi-domain In phases. Upon nitridation with NH 3 at ∼ 480 °C, besides the nitridation of the In droplets, the N radicals also dissociated the In-Si bonds to form Si-N. This caused a partial disintegration of the ordered In phase and removal of the In adatoms between the In droplets. - Highlights: ► Formation and nitridation of indium (In) droplets on Si (111) were studied. ► In droplets evolved with the 4 × 1-In cluster chains at 0.82 monolayer (ML). ► In droplets grow in density and lateral size with In coverage increased to 2.3 ML. ► The multi-domain In phases were formed at 2.3 ML. ► Nitridation of In droplets is accompanied by a disintegration of layering In phase

  14. Cubic Gallium Nitride on Micropatterned Si (001) for Longer Wavelength LEDs

    Energy Technology Data Exchange (ETDEWEB)

    Durniak, Mark T. [Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Materials Science and Engineering; Chaudhuri, Anabil [Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials; Smith, Michael L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Material Sciences; Allerman, Andrew A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Material Sciences; Lee, S. C. [Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials; Brueck, S. R. J. [Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials; Wetzel, Christian [Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Physics, Applied Physics, and Astronomy and Dept. of Materials Science and Engineering

    2016-03-01

    GaInN/GaN heterostructures of cubic phase have the potential to overcome the limitations of wurtzite structures commonly used for light emitting and laser diodes. Wurtzite GaInN suffers from large internal polarization fields, which force design compromises ( 0001 ) towards ultra-narrow quantum wells and reduce recombination volume and efficiency. Cubic GaInN microstripes grown at Rensselaer Polytechnic Institute by metal organic vapor phase epitaxy on micropatterned Si , with {111} v-grooves oriented along Si ( 001 ) , offer a system free of internal polarization fields, wider quantum wells, and smaller <00$\\bar1$> bandgap energy. We prepared 6 and 9 nm Ga x In 1-x N/GaN single quantum well structures with peak wavelength ranges from 520 to 570 nm with photons predominately polarized perpendicular to the grooves. We estimate a cubic InN composition range of 0 < x < 0.5 and an upper limit of the internal quantum efficiency of 50%. Stripe geometry and polarization may be suitable for mode confinement and reduced threshold stimulated emission.

  15. Wear property of silicon nitride in steel-on-Si{sub 3}N{sub 4} and Si{sub 3}N{sub 4}-on-Si{sub 3}N{sub 4} systems

    Energy Technology Data Exchange (ETDEWEB)

    Liu Weimin [Chinese Academy of Sciences, Lanzhou (China). Lab. of Solid Lubrication; Duda, J.L. [Pennsylvania State Univ., University Park, PA (United States). Dept. of Chemical Engineering; Klaus, E.E. [Pennsylvania State Univ., University Park, PA (United States). Dept. of Chemical Engineering

    1996-11-15

    A ball-on-three-disc modification of the four-ball wear tester was utilized to evaluate the wear property of Si{sub 3}N{sub 4} lubricated with mineral oil, containing additives such as oleic acid, stearic acid and zinc dialkyldithiophosphate (ZDP). For comparison, the wear of a steel ball on Si{sub 3}N{sub 4} discs and an Si{sub 3}N{sub 4} ball on Si{sub 3}N{sub 4} discs was investigated for identical test conditions, and the worn surfaces of the discs were analyzed using scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The study indicates that the steel ball-on-Si{sub 3}N{sub 4} disc system usually gives less wear of the Si{sub 3}N{sub 4} disc compared with the Si{sub 3}N{sub 4} ball-on-Si{sub 3}N{sub 4} disc system. Among the three tested additives, ZDP shows best antiwear property even at a load of 396 N in the Si{sub 3}N{sub 4} ball-on-Si{sub 3}N{sub 4} disc system. XPS results reveal that a protective surface film containing the products of degraded ZDP was formed on the rubbed surfaces. (orig.)

  16. Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate

    International Nuclear Information System (INIS)

    Imura, M.; Honshio, A.; Miyake, Y.; Nakano, K.; Tsuchiya, N.; Tsuda, M.; Okadome, Y.; Balakrishnan, K.; Iwaya, M.; Kamiyama, S.; Amano, H.; Akasaki, I.

    2006-01-01

    High-quality (112-bar 0) GaN layers with atomically flat surface have been grown on a precisely offset-angle-controlled (11-bar 02) sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Insertion of AlGaN layer between underlying AlN layer and GaN was found to improve crystalline quality of upper GaN layer. In addition, a combination of high growth condition followed and epitaxial lateral overgrowth has been employed for the growth of GaN and this helped in reducing the dislocation density in the resultant layers. GaN and AlN were grown on (303-bar 8) SiC substrates by MOVPE and sublimation methods, respectively. The crystal orientation of GaN and AlN could be just aligned to that of the substrate. Microstructure analysis of the layers was also carried out by transmission electron microscopy

  17. Elaboration and characterisation of SiAlON-boron nitride refractory ceramic composites; Elaboration et caracterisation de composites ceramiques refractaires SiALON-Nitrure de bore

    Energy Technology Data Exchange (ETDEWEB)

    Doche, C.

    1996-05-07

    SiAlON-BN are materials able to replace carbon refractories used in steel-making shop, especially for low carbon steels elaboration. Two family of composites are studied: Si{sub 3}N{sub 4}-BN obtained by hot compression, and SiAlON-BN by natural sintering. In the first case, an organic precursor of BN which seems to activate the sintering process was also used. For all these materials, we studied elaboration processes, microstructures, mechanical properties, and thermal shocks, oxidation and corrosion resistances by liquid iron. BN presence lowers mechanical properties, but increases thermal shock and oxidation resistance at high temperature. From all the sintering add-on, Y{sub 2}O{sub 3}, Nd{sub 2}O{sub 3}, La{sub 2}O{sub 3}, CeO{sub 2}, neodymium and lanthanum oxides seems to give a light improvement of high temperature resistance. (A.B.)

  18. Application of Silicon Nitride (Si3N4 Ceramics in Ball Bearing

    Directory of Open Access Journals (Sweden)

    Wijianto Wijianto

    2016-08-01

    operation up to 1000°C, greater thermal shock resistance, lower density and low thermal expansion. This properties gives some benefit for ball bearing material such as higher running speed, reduce vibration of the shaft, will improve the life time and maintenance cost, lower heat generated, less energy consumption, lower wear rate, reducing noise level and reduce of using lubricant. The sintering methods are used to produce ball bearing from silicon nitride. Some techniques can be applied to increase ceramics strength which are reduce porosity, reduce grain size, reduce surface flaw and proof stressing. The surface finishing of the ceramic bearing is very important because silicon nitride as a brittle material, its strength is limited to the flaw sizes especially the flaw at the surface.

  19. Growth of dilute nitride GaAsN/GaAs heterostructure nanowires on Si substrates.

    Science.gov (United States)

    Araki, Yoshiaki; Yamaguchi, Masahito; Ishikawa, Fumitaro

    2013-02-15

    The concept of band engineering dilute nitride semiconductors into nanowires is introduced. Using plasma-assisted molecular beam epitaxy, dilute nitride GaAsN/GaAs heterostructure nanowires are grown on silicon (111) substrates. Growth of the nanowires under high As overpressure results in a regular wire diameter of 350 nm with a length exceeding 3 μm. The GaAsN/GaAs nanowires show characteristics including favorable vertical alignment, hexagonal cross-sectional structure with {110} facets, regions of wurtzite and zinc-blende phases, and a core-shell-type heterostructure. The nanowires are composed of GaAsN shells containing up to 0.3% nitrogen surrounding GaAs cores. Panchromatic cathodoluminescence images show intensity modulation along the length of the nanowires that is possibly related to the interfaces of wurtzite/zinc-blende regions. Photoluminescence with peak wavelengths between 870 and 920 nm is clearly observed at room temperature. The spectral red shift depends on the amount of introduced nitrogen. These results reveal a method for precise lattice and band engineering of nanowires composed of dilute nitride semiconductors.

  20. Improved memory performance of metal—oxide—nitride—oxide—silicon by annealing the SiO2 tunnel layer in different nitridation atmospheres

    Science.gov (United States)

    Meilin, He; Jingping, Xu; Jianxiong, Chen; Lu, Liu

    2013-11-01

    Metal—oxide—nitride—oxide—silicon (MONOS) capacitors with thermally grown SiO2 as the tunnel layer are fabricated, and the effects of different ambient nitridation (NH3, NO and N2O) on the characteristics of the memory capacitors are investigated. The experimental results indicate that the device with tunnel oxide annealed in NO ambient exhibits excellent memory characteristics, i.e. a large memory window, high program/erase speed, and good endurance and retention performance (the charge loss rate is 14.5% after 10 years). The mechanism involved is that much more nitrogen is incorporated into the tunnel oxide during NO annealing, resulting in a lower tunneling barrier height and smaller interface state density. Thus, there is a higher tunneling rate under a high electric field and a lower probability of trap-assisted tunneling during retention, as compared to N2O annealing. Furthermore, compared with the NH3-annealed device, no weak Si—H bonds and electron traps related to the hydrogen are introduced for the NO-annealed devices, giving a high-quality and high-reliability SiON tunneling layer and SiON/Si interface due to the suitable nitridation and oxidation roles of NO.

  1. High-resolution X-ray photoemission spectroscopy study of AlN nano-columns grown by nitridation of Al nano-squares on Si(111) substrates with ammonia

    International Nuclear Information System (INIS)

    Qi, B.; Agnarsson, B.; Goethelid, M.; Olafsson, S.; Gislason, H.P.

    2010-01-01

    The growth of AlN nano-columns by ammonium nitridation of Al nano-squares embedded in SiO 2 on Si(111) substrates was studied by high-resolution X-ray photoemission spectroscopy from a synchrotron radiation source and scanning electron microscopy (SEM). Selective nitridation of the Al nano-squares on the SiO 2 mask was obtained in the temperature window of 600 o C-700 o C. The well-shaped AlN nano-column arrays with diameters confined by the lateral size of the Al nano-squares (∼ 100 nm) were observed in SEM.

  2. Thermal effects on the mechanical properties of SiC fiber reinforced reaction bonded silicon nitride matrix (SiC/RBSN) composites

    Science.gov (United States)

    Bhatt, R. T.; Phillips, R. E.

    1988-01-01

    The elevated temperature four-point flexural strength and the room temperature tensile and flexural strength properties after thermal shock were measured for ceramic composites consisting of 30 vol pct uniaxially aligned 142 micron diameter SiC fibers in a reaction bonded Si3N4 matrix. The elevated temperature strengths were measured after 15 min of exposure in air at temperatures to 1400 C. Thermal shock treatment was accomplished by heating the composite in air for 15 min at temperatures to 1200 C and then quenching in water at 25 C. The results indicate no significant loss in strength properties either at temperature or after thermal shock when compared with the strength data for composites in the as-fabricated condition.

  3. Single crystalline PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices.

    Science.gov (United States)

    Lin, Yung-Chen; Lu, Kuo-Chang; Wu, Wen-Wei; Bai, Jingwei; Chen, Lih J; Tu, K N; Huang, Yu

    2008-03-01

    We report the formation of PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices from such heterostructures. Scanning electron microscopy studies show that silicon nanowires can be converted into PtSi nanowires through controlled reactions between lithographically defined platinum pads and silicon nanowires. High-resolution transmission electron microscopy studies show that PtSi/Si/PtSi heterostructure has an atomically sharp interface with epitaxial relationships of Si[110]//PtSi[010] and Si(111)//PtSi(101). Electrical measurements show that the pure PtSi nanowires have low resistivities approximately 28.6 microOmega.cm and high breakdown current densities>1x10(8) A/cm2. Furthermore, using single crystal PtSi/Si/PtSi nanowire heterostructures with atomically sharp interfaces, we have fabricated high-performance nanoscale field-effect transistors from intrinsic silicon nanowires, in which the source and drain contacts are defined by the metallic PtSi nanowire regions, and the gate length is defined by the Si nanowire region. Electrical measurements show nearly perfect p-channel enhancement mode transistor behavior with a normalized transconductance of 0.3 mS/microm, field-effect hole mobility of 168 cm2/V.s, and on/off ratio>10(7), demonstrating the best performing device from intrinsic silicon nanowires.

  4. Ordering at Si(111)/o-Si and Si(111)/SiO2 Interfaces

    DEFF Research Database (Denmark)

    Robinson, I. K.; Waskiewicz, W. K.; Tung, R. T.

    1986-01-01

    X-ray diffraction has been used to measure the intensity profile of the two-dimensional rods of scattering from a single interface buried inside a bulk material. In both Si(111)/a-Si and Si(111)/SiO2 examples there are features in the perpendicular-momentum-transfer dependence which are not expec...... are not expected from an ideal sharp interface. The diffraction profiles are explained by models with partially ordered layers extending into the amorphous region. In the Si(111)/a-Si case there is clear evidence of stacking faults which are attributed to residual 7×7 reconstruction....

  5. N{sub 2}O + SO{sub 2} reaction over Si- and C-doped boron nitride nanotubes: A comparative DFT study

    Energy Technology Data Exchange (ETDEWEB)

    Esrafili, Mehdi D., E-mail: esrafili@maragheh.ac.ir; Saeidi, Nasibeh

    2017-05-01

    Highlights: • The mechanisms of N{sub 2}O + SO{sub 2} reaction are investigated over Si- and C-doped BNNTs. • Both Si- and C-doped BNNTs can be used as an efficient catalyst for the N{sub 2}O + SO{sub 2} reaction. • The 2N{sub 2}O → O{sub 2} + N{sub 2} reaction needs a large activation energy over both surfaces. - Abstract: Density functional theory calculations are performed to investigate the mechanisms of N{sub 2}O reduction by SO{sub 2} over Si- and C-doped (6,0) boron nitride nanotubes (BNNTs). According to our results, the Si or C adatom can be strongly stabilized over the vacancy defect of the BNNT. The adsorption energy of Si and C atoms over defective BNNT is calculated to be −297.3 and −333.7 kcal/mol, respectively, indicating a strong interaction between these dopant atoms and the tube surface. The N{sub 2}O reduction reaction includes the decomposition of N{sub 2}O (i.e. N{sub 2}O → N{sub 2} + O*), followed by the reduction of O* by SO{sub 2} molecule (i.e. SO{sub 2} + O* → SO{sub 3}). The calculated energy barrier of the SO{sub 2} + O* → SO{sub 3} reaction on Si- and C-doped BNNTs is 2.4 and 5.4 kcal/mol, respectively. Moreover, the effects of tube diameter and length on the N{sub 2}O reduction are studied in detail. The disproportionation of N{sub 2}O molecules (2N{sub 2}O → 2N{sub 2} + O{sub 2}) over both surfaces needs a quite large activation energy, which indicates the impossibility of this reaction at ambient condition. The results show that both Si- and C-doped BNNTs can be viewed as an effective green catalyst for the reduction of N{sub 2}O.

  6. An X-ray photoelectron spectroscopy study of the thermal oxidation and nitridation of Si(100)-2 × 1 by NO 2

    Science.gov (United States)

    Lutz, F.; Bischoff, J. L.; Kubler, L.; Bolmont, D.

    1993-12-01

    The interaction of NO 2 on clean reconstructed Si(100) surfaces has been studied by X-ray photoelectron spectroscopy (XPS) in large substrate temperature ( TS) and NO 2 pressure ranges. Our results support the adsorption of only completely dissociated or atomic species whatever TS between room temperature and 1100 K. The respective oxygen and nitrogen uptakes, given as a function of pressure and TS, are compared. For oxygen, a critical temperature TOc (pressure POc) for a given pressure POc (temperature TOc) separates the desorption or combustion mode from the passivating one, very similar to the oxidation by O 2. For nitrogen, similar evolutions with TS and pressure are evidenced only above 750 K, when oxygen desorption occurs. Below 750 K, oxidation prevails over nitrogen chemisorption with a nitrogen coverage limited to a fraction of a monolayer whatever the pressure. Above 750 K the nitrogen chemisorption rate is enhanced so that the TS range comprised between 750 K and TOc defines an oxynitridation stage where both substantial oxygen and nitrogen coverages are found. Above TOc, nearly pure nitridation is enabled by oxygen etching. In conjunction with coverage measurements, angle-resolved XPS was used to probe the in-depth distribution of the chemisorbed atoms in the TS range above 750 K. From the comparison of the O 1s and N 1s intensities it is concluded that the initial oxynitride occurs with the formation of nitrogen pile-up at the Si/Si-oxide interface.

  7. HfSiO/SiO2- and SiO2/HfSiO/SiO2-gate stacks for non-volatile memories

    International Nuclear Information System (INIS)

    Erlbacher, T.; Jank, M.P.M.; Lemberger, M.; Bauer, A.J.; Ryssel, H.

    2008-01-01

    The use of hafnium silicate (HfSiO) as a charge trapping layer in charge-based non-volatile memory cells will be discussed. First, fundamental properties (e.g., dielectric constant, trap depths/levels) of the hafnium silicate layers, deposited from a single-source precursor, are deduced from capacitance-voltage and current density-voltage measurements. The oxide trap density of the analyzed HfSiO layers can be tuned to exceed that of silicon nitride. At the same time, a significant reduction of the write voltage is achieved due to a reduced effective oxide thickness. The erase operation, however, is hampered by the lower electric field at the HfSiO layer due to its high dielectric constant. Measurements also indicate that HfSiO exposed to a higher thermal budget during device fabrication results in fewer trapping centers. Retention measurements show that information can be reliably stored in memory cells with a trapping layer of HfSiO for more than 10 years similar to their silicon nitride counterparts. But the thickness of the top and bottom oxides must be increased for compensation of additional charge losses which are due to lower trap depth and free electron mass in HfSiO

  8. Thermal effects on the mechanical properties of SiC fibre reinforced reaction-bonded silicon nitride matrix composites

    Science.gov (United States)

    Bhatt, R. T.; Phillips, R. E.

    1990-01-01

    The elevated temperature four-point flexural strength and the room temperature tensile and flexural strength properties after thermal shock were measured for ceramic composites consisting of 30 vol pct uniaxially aligned 142 micron diameter SiC fibers in a reaction bonded Si3N4 matrix. The elevated temperature strengths were measured after 15 min of exposure in air at temperatures to 1400 C. Thermal shock treatment was accomplished by heating the composite in air for 15 min at temperatures to 1200 C and then quenching in water at 25 C. The results indicate no significant loss in strength properties either at temperature or after thermal shock when compared with the strength data for composites in the as-fabricated condition.

  9. SiGe/Si electronics and optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Wang, K.L.; Karunasiri, R.P.G. [Univ. of California, Los Angeles, CA (United States)

    1993-05-01

    Recently, there is an increased interest in the use of SiGe layered material for integration with Si technology. SiGe offers the opportunity for the first time to realize the advantages of heterojunctions in Si-based technology. In this article, the present status of the SiGe epitaxial growth techniques will be discussed from the point of view of device application. New directions will be presented. Next, electronic devices to be reviewed include bipolars and field effect transistors. The progress of tunneling devices will also be discussed. Then, the realization of quantum wells and superlattices for optoelectronics will be discussed. Then, the realization of quantum wells and superlattices for optoelectronics will be discussed. These will include Si-based detectors and modulators based on interband and intersubband transitions. One of the focuses will be the normal incidence operation for intersubband devices. Finally, the current status in the quest of light emitters will be briefly addressed. 44 refs., 15 figs.

  10. Oxidation resistance in air of 1-D SiC (Hi-nicalon) fibre reinforced silicon nitride ceramic matrix composite

    International Nuclear Information System (INIS)

    Dupel, P.; Veyret, J.B.

    1997-01-01

    The oxidation behaviour of a Si 3 N 4 matrix reinforced with SiC fibres (Hi-nicalon) pre-coated with a 400 nm thick pyrolytic carbon layer has been investigated in dry air in the temperature range 800-1500 C. The same study was performed for individual constituents of the composite (fibre and matrix). Two phenomena are observed in the oxidation behaviour of the composite. At low temperature (T<1200 C), the matrix oxidation is negligible, only the carbon interphase was oxidised creating an annular space between the fibres and the matrix throughout the sample. At high temperature (T≥1300 C) the rate of formation of the oxidation products of the matrix is rapid and a sealing effect is observed. While at these temperatures the interphase is protected in the bulk of the material, the time needed to seal the gap between the fibre and the matrix is too long to prevent its oxidation to a significant depth from the surface. Finally, preliminary results are presented where the consumption of the interphase is completely prevented by applying an external coating which gives oxidation protection from low to high temperature. (orig.)

  11. Raman study of light-emitting SiN{sub x} films grown on Si by low-pressure chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Komarov, F. [A.N. Sevchenko Institute of Applied Physics Problems, Kurchatov Str. 7, 220045 Minsk (Belarus); Vlasukova, L. [Belarusian State University, Nezavisimosty Ave. 4, 220030 Minsk (Belarus); Parkhomenko, I., E-mail: irinaparkhomen@gmail.com [Belarusian State University, Nezavisimosty Ave. 4, 220030 Minsk (Belarus); Milchanin, O. [A.N. Sevchenko Institute of Applied Physics Problems, Kurchatov Str. 7, 220045 Minsk (Belarus); Mudryi, A. [Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus, P. Brovki Str. 17, 220072 Minsk (Belarus); Togambaeva, A. [Al-Farabi Kazakh National University, Al-Farabiy Ave. 71, 050038 Almaty (Kazakhstan); Korolik, O. [Belarusian State University, Nezavisimosty Ave. 4, 220030 Minsk (Belarus)

    2015-03-31

    Si-rich silicon nitride (SRSN) films were deposited on Si wafers by low pressure chemical vapor deposition (LPCVD) technique and, subsequently, annealed at (800–1200) °C to form Si precipitates. The composition of SiN{sub x} films was measured by Rutherford backscattering spectrometry (RBS). Two sets of samples differed by the amount of excessive Si (Si{sub exc}) in silicon nitride were studied. Evolution of Si nanoclusters from amorphous to crystalline ones during high temperature treatment was examined by Raman scattering (RS) spectroscopy. The amorphous Si clusters were already revealed in as-deposited SiN{sub x} while the annealing results in their crystallization. The crystalline nanoprecipitates are only registered in nitride films after annealing at 1200 °C. A dependence of Raman scattering intensity from the Si wafer on the temperature of annealing of SiN{sub x}/Si structures was revealed. This information was used to explain the phase transformations in SRSNs during high temperature treatments. The peculiarities of photoluminescence (PL) spectra for two sets of Si-rich SiN{sub x} films are explained taking into account the contribution from the quantum confinement effect of Si nanocrystals and from the native defects in silicon nitride matrix, such as N- and K-centers. - Highlights: • The size of Si nanocrystals in Si-rich SiN{sub x} films depends on Si excess content. • Excess Si remains in SiN{sub 0.46} as randomly distributed Si atoms in atomic network. • In SiN{sub 1} films practically all excess Si is aggregated into Si nanoclusters.

  12. SiGe nano-heteroepitaxy on Si and SiGe nano-pillars.

    Science.gov (United States)

    Mastari, Marouane; Charles, Matthew; Bogumilowicz, Yann; Thai, Quang Minh; Pimenta Barros, Patricia; Argoud, Maxime; Papon, Anne-Marie; Gergaud, Patrice; Landru, Didier; Kim, Youngpil; Hartmann, Jean Michel

    2018-04-12

    In this paper, SiGe nano-heteroepitaxy on Si and SiGe nano-pillars was investigated in a 300 mm industrial Reduced Pressure-Chemical Vapour Deposition tool. An integration scheme based on diblock copolymer patterning was used to fabricate nanometer-sized templates for the epitaxy of Si and SiGe nano-pillars. Results showed highly selective and uniform processes for the epitaxial growth of Si and SiGe nano-pillars. 200 nm thick SiGe layers were grown on Si and SiGe nano-pillars and characterized by AFM, XRD and TEM. Smooth SiGe surfaces and full strain relaxation were obtained in the 650-700°C range for 2D SiGe layers grown either on Si or SiGe nano-pillars. © 2018 IOP Publishing Ltd.

  13. High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si Part III: heavy-fluence Co bombardment induced surface topography development

    International Nuclear Information System (INIS)

    Zhang Yanwen; Winzell, Thomas; Zhang Tonghe; Maximov, Ivan A.; Sarwe, Eva-Lena; Graczyk, Mariusz; Montelius, Lars; Whitlow, Harry J.

    1999-01-01

    The surface topography development of Si(1 0 0), Si(1 1 1), oxide/Si and nitride/Si structures under high normal fluence (1x10 16 -2.6x10 18 ions cm -2 ) keV Co metal vapour vacuum arc (MEVVA) irradiation has been investigated by scanning electron microscopy (SEM). The results show that for normal fluences up to ∼10 17 ions cm -2 , the surface topography remains flat. As the fluence increases, pores develop and grow to form a columnar structure. At even higher fluences the columns are eroded to form an acicular structure. Deposition of a silicon dioxide or nitride layer on the Si surface leads to a significant suppression of the onset fluence for the formation of a rough surface. The porous surface could not be transformed to the network of acicular structures or a flat surface by high temperature annealing

  14. Characterization of nanostructure ferrite material on gallium nitride on SiC substrate for millimeter wave integrated circuit

    Science.gov (United States)

    O'Keefe, Brian; Liang, Tinghao; Afsar, Mohammad N.; Koomson, Valencia J.

    2017-05-01

    In this paper, for the first time, the characterization of spin-casted thick Barium nano-hexaferrite film on GaN-on-SiC substrate over a broad frequency range of 30-110 GHz is presented. Real and imaginary parts of both permittivity and permeability of the ferrite/polymer film are computed from transmittance data obtained by using a free space quasi-optical millimeter wave spectrometer. The spin-casted composite film shows strong resonance in the Q band, and mixing the powder with polymer slightly shifts the resonance frequency lower compared to pure powder. The high temperature compatibility of GaN substrate enables us to run burn-out tests at temperatures up to 900°C. Significant shortening phenomenon of resonance linewidth after heat treatment was found. Linewidth is reduced from 2.8 kOe to 1.7 kOe. Experiment results show that the aforementioned film is a good candidate in applications of non-reciprocal ferrite devices like isolators, phase shifters, and circulators.

  15. Characterization of nanostructure ferrite material on gallium nitride on SiC substrate for millimeter wave integrated circuit

    Directory of Open Access Journals (Sweden)

    Brian O’Keefe

    2017-05-01

    Full Text Available In this paper, for the first time, the characterization of spin-casted thick Barium nano-hexaferrite film on GaN-on-SiC substrate over a broad frequency range of 30-110 GHz is presented. Real and imaginary parts of both permittivity and permeability of the ferrite/polymer film are computed from transmittance data obtained by using a free space quasi-optical millimeter wave spectrometer. The spin-casted composite film shows strong resonance in the Q band, and mixing the powder with polymer slightly shifts the resonance frequency lower compared to pure powder. The high temperature compatibility of GaN substrate enables us to run burn-out tests at temperatures up to 900°C. Significant shortening phenomenon of resonance linewidth after heat treatment was found. Linewidth is reduced from 2.8 kOe to 1.7 kOe. Experiment results show that the aforementioned film is a good candidate in applications of non-reciprocal ferrite devices like isolators, phase shifters, and circulators.

  16. The role of interfacial microstructure in the mechanical properties of SiC whisker reinforced Si3N4

    International Nuclear Information System (INIS)

    Swan, A.H.; Dunlop, G.L.

    1991-01-01

    SiC whisker reinforced Si 3 N 4 can be produced using a number of different methods. These include hot pressing (HP), hot isostatic pressing (HIP), reaction bonding (RB), nitrided pressureless sintering (NPS) and various combinations of these methods. This paper is concerned with the microstructure of SiC whisker reinforced Si 3 N 4 materials fabricated by both nitrided pressureless sintering and hot pressing. Attention has been given to the microstructure of as-sintered materials, crack paths within the microstructure and also microstructural changes that occur during high temperature deformation

  17. Effect of {alpha}-Si{sub 3}N{sub 4} Addition on Sintering of {alpha}-Sialon Powder via Carbonthermal Reduction Nitridation of Boron-rich Slag-based Mixture

    Energy Technology Data Exchange (ETDEWEB)

    Wu Junbin; Jiang Tao; Xue Xiangxin, E-mail: komsae@163.com [School of Materials and Metallurgy, Northeastern University, Shenyang (China)

    2011-10-29

    With boron-rich slag, silica fume, bauxite chalmette, carbon black and {alpha}-Si{sub 3}N{sub 4} as starting materials, {alpha}-Sialon powders were prepared by carbothermal reduction-nitridation(CRN). Different contents of {alpha}-Si{sub 3}N{sub 4} addition were added to investigate the {alpha}-Sialon formation as a function of {alpha}-Si{sub 3}N{sub 4} addition from boron rich slag based mixture fired at 1480 deg. C for 8 h under N{sub 2} flowing of 0.4 L/min. Phase assembly, microstructure of reaction products were determined by X-ray Diffraction and Scanning Electron Microscope. The results showed that the main phases of the samples were a-Sialon, h-BN, AlN and small quantity of SiC. With the increasing amount of the {alpha}-Si{sub 3}N{sub 4} addition, the h-BN content remained in a constant and AlN content was running down steadily, while the {alpha}-Sialon content increased gradually. The aspect ratio and the amount of elongated {alpha}-Sialon grains could be tailored by using different amounts of the {alpha}-Si{sub 3}N{sub 4} addition.

  18. Lateral Epitaxial Overgrowth of GaN on Si(111)

    National Research Council Canada - National Science Library

    1998-01-01

    ...) and atomic force microscopy (AFM). The growth on the Si(111) substrate was initiated with the deposition of a thin AlN buffer layer to avoid the formation of potentially detrimental silicon nitride at the interface...

  19. Photoelectric properties of n-SiC/n-Si heterojunctions

    Directory of Open Access Journals (Sweden)

    Semenov A. V.

    2012-10-01

    Full Text Available Photovoltaic effect in isotype heterotructure formed by nanocrystalline silicon carbide films on single crystal n-Si substrates (n-SiC/n-Si heterojunction was studied. The films were produced by direct ionic deposition method. The model that takes into account the quantum wells and potential barriers caused by band offsets was proposed to explain the current-voltage characteristics and photovoltaic properties of the heterostructure n-SiC/n-Si.

  20. Photoluminescence induced by Si implantation into Si{sub 3}N{sub 4} matrix

    Energy Technology Data Exchange (ETDEWEB)

    Bregolin, F.L. [Instituto de Fisica, Universidade Federal Rio Grande do Sul, C.P. 15051, 91501-970 Porto Alegre, RS (Brazil); Behar, M. [Instituto de Fisica, Universidade Federal Rio Grande do Sul, C.P. 15051, 91501-970 Porto Alegre, RS (Brazil)], E-mail: behar@if.ufrgs.br; Sias, U.S. [Centro Federal de Educacao Tecnologica de Pelotas, 96015-370, RS (Brazil); Moreira, E.C. [Universidade Federal do Pampa - UNIPAMPA, Campus Bage, 96400-970 Bage, RS (Brazil)

    2009-05-01

    Up to the present, photoluminescence (PL) was obtained from near stoichiometric or amorphous Si nitride films (SiN{sub x}) after annealing at high temperatures. As a consequence, the existence of PL bands has been reported in the 400-900 nm range. In the present contribution, we report the first PL results obtained by Si implantation into a stoichiometric 380 nm Si{sub 3}N{sub 4} film. The Si excess is obtained by a 170 keV Si implantation at different temperatures with a fluence of {phi} = 10{sup 17} Si/cm{sup 2}. Further, we have annealed the samples in a temperature range between 350 and 900 deg. C in order to form the Si precipitates. PL measurements were done using an Ar laser as an excitation source, and a broad PL band basically centered at 910 nm was obtained. We show that the best annealing condition is obtained at T{sub a} = 475 deg. C for the samples implanted at 200 deg. C, with a PL yield 20% higher than the obtained at room temperature implantation. Finally, we have varied the implantation fluence and, consequently, the Si nanocrystals size. However, no variation was observed nor in the position neither in the intensity of the PL band. We concluded that the PL emission is due to radiative states at the matrix and the Si nanocrystals interface, as previously suggested in the literature.

  1. A novel passivation process of silicon nanowires by a low-cost PECVD technique for deposition of hydrogenated silicon nitride using SiH4 and N2 as precursor gases

    Science.gov (United States)

    Bouaziz, Lamia; Dridi, Donia; Karyaoui, Mokhtar; Angelova, Todora; Sanchez Plaza, Guillermo; Chtourou, Radhouane

    2017-03-01

    In this work, a different SiNx passivation process of silicon nanowires has been opted for the deposition of a hydrogenated silicon nitride (SiNx:H) by a low-cost plasma enhanced chemical vapor deposition (PECVD) using silane ( SiH4 and nitrogen ( N2 as reactive gases. This study is focused on the effect of the gas flow ratio on chemical composition, morphological, optical and optoelectronic properties of silicon nanowires. The existence of Si-N and Si-H bonds was proven by the Fourier transmission infrared (FTIR) spectrum. Morphological structures were shown by scanning electron microscopy (SEM), and the roughness was investigated by atomic force microscopy (AFM). A low reflectivity less than 6% in the wavelength range 250-1200nm has been shown by UV-visible spectroscopy. Furthermore, the thickness and the refractive index of the passivation layer is determined by ellipsometry measurements. As a result, an improvement in minority carrier lifetime has been obtained by reducing surface recombination of silicon nanowires.

  2. Preparation of B-doped Si quantum dots embedded in SiNx films for Si quantum dot solar cells

    Science.gov (United States)

    Chen, Xiaobo; Yang, Peizhi

    2018-01-01

    Silicon quantum dots (Si-QDs) embedded B-doped SiNx films were fabricated by magnetron co-sputtering. The effects of B content on the structural, optical and electrical properties of the films were studied. The study found that the amount of B dopant has no significant effect on the crystallization characteristics of the films. B atoms may be doped in the Si-QDs or exist in the silicon nitride or the interface between Si-QDs and the matrix. PL intensity increases with increasing B content, but increases at first and then decreases. The conductivity as a function of the dopant concentration increases at first from a value of 2.71 × 10-4 S/cm to 5.83 × 10-2 S/cm until 0.9 at.% and then decreases. By employing B-doped Si-QDs films, Si-QDs/c-Si heterojunction solar cells were fabricated and the effect of B doping concentration on the photovoltaic properties was studied. It was found that, with the increase of B doping amount, the photovoltaic performance is improved, when the B doping amount is 0.9 at.%, the efficiency reaches the highest value of 4.26%.

  3. Preparation and characterization of porous Si3 N4 ceramics ...

    Indian Academy of Sciences (India)

    Administrator

    Abstract. Porous silicon nitride (Si3N4) ceramics were fabricated by compression molding and slip casting methods using petroleum coke as pore forming agent, and Y2O3–Al2O3 as sintering additives. Microstructure, mechanical properties and gas permeability of porous Si3N4 ceramics were investigated. The mechanical.

  4. Kapitza resistance of Si/SiO2 interface

    Energy Technology Data Exchange (ETDEWEB)

    Bowen Deng; Aleksandr Chenatynskiy; Marat Khafizov; David Hurley; Simon Phillpot

    2014-02-01

    A phonon wave packet dynamics method is used to characterize the Kapitza resistance of a Si/SiO2 interface in a Si/SiO2/Si heterostructure. By varying the thickness of SiO2 layer sandwiched between two Si layers, we determine the Kapitza resistance for the Si/SiO2 interface from both wave packet dynamics and a direct, non-equilibrium molecular dynamics approach. The good agreement between the two methods indicates that they have each captured the anharmonic phonon scatterings at the interface. Moreover, detailed analysis provides insights as to how individual phonon mode scatters at the interface and their contribution to the Kapitza resistance.

  5. Sub-barrier fusion of Si+Si systems

    Directory of Open Access Journals (Sweden)

    Colucci G.

    2017-01-01

    Full Text Available The near- and sub-barrier fusion excitation function has been measured for the system 30Si+30Si at the Laboratori Nazionali di Legnaro of INFN, using the 30Si beam of the XTU Tandem accelerator in the energy range 47 - 90 MeV. A set-up based on a beam electrostatic deflector was used for detecting fusion evaporation residues. The measured cross sections have been compared to previous data on 28Si+28Si and Coupled Channels (CC calculations have been performed using M3Y+repulsion and Woods-Saxon potentials, where the lowlying 2+ and 3− excitations have been included. A weak imaginary potential was found to be necessary to reproduce the low energy 28Si+28Si data. This probably simulates the effect of the oblate deformation of this nucleus. On the contrary, 30Si is a spherical nucleus, 30Si+30Si is nicely fit by CC calculations and no imaginary potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the two symmetric systems highlights their different low energy trend. A difference can also be noted in the two barrier distributions, where the high-energy peak present in 28Si+28Si is not observed for 30Si+30Si, probably due to the weaker couplings in last case.

  6. Sub-barrier fusion of Si+Si systems

    Science.gov (United States)

    Colucci, G.; Montagnoli, G.; Stefanini, A. M.; Bourgin, D.; Čolović, P.; Corradi, L.; Courtin, S.; Faggian, M.; Fioretto, E.; Galtarossa, F.; Goasduff, A.; Haas, F.; Mazzocco, M.; Scarlassara, F.; Stefanini, C.; Strano, E.; Urbani, M.; Szilner, S.; Zhang, G. L.

    2017-11-01

    The near- and sub-barrier fusion excitation function has been measured for the system 30Si+30Si at the Laboratori Nazionali di Legnaro of INFN, using the 30Si beam of the XTU Tandem accelerator in the energy range 47 - 90 MeV. A set-up based on a beam electrostatic deflector was used for detecting fusion evaporation residues. The measured cross sections have been compared to previous data on 28Si+28Si and Coupled Channels (CC) calculations have been performed using M3Y+repulsion and Woods-Saxon potentials, where the lowlying 2+ and 3- excitations have been included. A weak imaginary potential was found to be necessary to reproduce the low energy 28Si+28Si data. This probably simulates the effect of the oblate deformation of this nucleus. On the contrary, 30Si is a spherical nucleus, 30Si+30Si is nicely fit by CC calculations and no imaginary potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the two symmetric systems highlights their different low energy trend. A difference can also be noted in the two barrier distributions, where the high-energy peak present in 28Si+28Si is not observed for 30Si+30Si, probably due to the weaker couplings in last case.

  7. Machining Performance of Sputter-Deposited (Al0.34Cr0.22Nb0.11Si0.11Ti0.2250N50 High-Entropy Nitride Coatings

    Directory of Open Access Journals (Sweden)

    Wan-Jui Shen

    2015-07-01

    Full Text Available (Al0.34Cr0.22Nb0.11Si0.11Ti0.2250N50 high-entropy nitride coatings prepared by reactive magnetron sputtering have been proved to have high hardness and superior oxidation resistance. Their thermal stability, adhesion strength, and cutting performance were investigated in this study. Hardness of the coating is 36 GPa, which only decreases slightly to 33 GPa after 900 °C annealing either in air or in vacuum for 2 h. No significant change in phase and microstructure were detected after annealing at 1000 °C. Rockwell C indentation and scratch tests shows that Ti interlayer provides a good adhesion between the nitride film and WC/Co substrates. In various milling tests, inserts coated with (Al0.34Cr0.22Nb0.11Si0.11Ti0.2250N50 have evidently smaller flank wear depth than commercial inserts coated with TiN and TiAlN, even with their smaller thickness. Therefore, the (Al0.34Cr0.22Nb0.11Si0.11Ti0.2250N50 coating has great potential in hard coating applications.

  8. Endotaxial Si nanolines in Si(001):H

    Science.gov (United States)

    Bianco, F.; Owen, J. H. G.; Köster, S. A.; Mazur, D.; Renner, Ch.; Bowler, D. R.

    2011-07-01

    We present a detailed study of the structural and electronic properties of a self-assembled silicon nanoline embedded in the H-terminated silicon (001) surface, known as the Haiku stripe. The nanoline is a perfectly straight and defect-free endotaxial structure of huge aspect ratio; it can grow micrometer long at a constant width of exactly four Si dimers (1.54 nm). Another remarkable property is its capacity to be exposed to air without suffering any degradation. The nanoline grows independently of any step edges at tunable densities from isolated nanolines to a dense array of nanolines. In addition to these unique structural characteristics, scanning tunneling microscopy and density functional theory reveal a one-dimensional state confined along the Haiku core. This nanoline is a promising candidate for the long-sought-after electronic solid-state one-dimensional model system to explore the fascinating quantum properties emerging in such reduced dimensionality.

  9. SiCloud

    DEFF Research Database (Denmark)

    Jiang, Cathy Y.; Devore, Peter T.S.; Lonappan, Cejo Konuparamban

    2017-01-01

    The silicon photonics industry is projected to be a multibillion dollar industry driven by the growth of data centers. In this work, we present an interactive online tool for silicon photonics. Silicon Photonics Cloud (SiCCloud.org) is an easy to use instructional tool for optical properties...

  10. Large-scale preparation of faceted Si3N4 nanorods from β-SiC nanowires

    International Nuclear Information System (INIS)

    Bechelany, M; Brioude, A; Bernard, S; Ferro, G; Cornu, D; Miele, P

    2007-01-01

    Batch-fabricated SiC nanowires were heated under an ammoniac flow up to 1400 deg. C. The ensuing product was characterized by SEM, HRTEM, EDX and XRD. As we found, SiC nanowires were completely converted into faceted α-Si 3 N 4 nanorods with diameters ranging from 10 to 500 nm and lengths lower than 10 μm. These nanorods present hexagonal cross sections. We suggest a growth mechanism based on the progressive elimination of carbon through hydrogenation reactions and the growth of silicon nitride nanorods via the high-temperature nitridation of silicon

  11. U-Mo/Al-Si interaction: Influence of Si concentration

    International Nuclear Information System (INIS)

    Allenou, J.; Palancher, H.; Iltis, X.; Cornen, M.; Tougait, O.; Tucoulou, R.; Welcomme, E.; Martin, Ph.; Valot, C.; Charollais, F.; Anselmet, M.C.; Lemoine, P.

    2010-01-01

    Within the framework of the development of low enriched nuclear fuels for research reactors, U-Mo/Al is the most promising option that has however to be optimised. Indeed at the U-Mo/Al interfaces between U-Mo particles and the Al matrix, an interaction layer grows under irradiation inducing an unacceptable fuel swelling. Adding silicon in limited content into the Al matrix has clearly improved the in-pile fuel behaviour. This breakthrough is attributed to an U-Mo/Al-Si protective layer around U-Mo particles appeared during fuel manufacturing. In this work, the evolution of the microstructure and composition of this protective layer with increasing Si concentrations in the Al matrix has been investigated. Conclusions are based on the characterization at the micrometer scale (X-ray diffraction and energy dispersive spectroscopy) of U-Mo7/Al-Si diffusion couples obtained by thermal annealing at 450 deg. C. Two types of interaction layers have been evidenced depending on the Si content in the Al-Si alloy: the threshold value is found at about 5 wt.% but obviously evolves with temperature. It has been shown that for Si concentrations ranging from 2 to 10 wt.%, the U-Mo7/Al-Si interaction is bi-layered and the Si-rich part is located close to the Al-Si for low Si concentrations (below 5 wt.%) and close to the U-Mo for higher Si concentrations. For Si weight fraction in the Al alloy lower than 5 wt.%, the Si-rich sub-layer (close to Al-Si) consists of U(Al, Si) 3 + UMo 2 Al 20 , when the other sub-layer (close to U-Mo) is silicon free and made of UAl 3 and U 6 Mo 4 Al 43 . For Si weight concentrations above 5 wt.%, the Si-rich part becomes U 3 (Si, Al) 5 + U(Al, Si) 3 (close to U-Mo) and the other sub-layer (close to Al-Si) consists of U(Al, Si) 3 + UMo 2 Al 20 . On the basis of these results and of a literature survey, a scheme is proposed to explain the formation of different types of ILs between U-Mo and Al-Si alloys (i.e. different protective layers).

  12. Nonvolatile field effect transistors based on protons and Si/SiO2Si structures

    International Nuclear Information System (INIS)

    Warren, W.L.; Vanheusden, K.; Fleetwood, D.M.; Schwank, J.R.; Winokur, P.S.; Knoll, M.G.; Devine, R.A.B.

    1997-01-01

    Recently, the authors have demonstrated that annealing Si/SiO 2 /Si structures in a hydrogen containing ambient introduces mobile H + ions into the buried SiO 2 layer. Changes in the H + spatial distribution within the SiO 2 layer were electrically monitored by current-voltage (I-V) measurements. The ability to directly probe reversible protonic motion in Si/SiO 2 /Si structures makes this an exemplar system to explore the physics and chemistry of hydrogen in the technologically relevant Si/SiO 2 structure. In this work, they illustrate that this effect can be used as the basis for a programmable nonvolatile field effect transistor (NVFET) memory that may compete with other Si-based memory devices. The power of this novel device is its simplicity; it is based upon standard Si/SiO 2 /Si technology and forming gas annealing, a common treatment used in integrated circuit processing. They also briefly discuss the effects of radiation on its retention properties

  13. Si-to-Si wafer bonding using evaporated glass

    DEFF Research Database (Denmark)

    Reus, Roger De; Lindahl, M.

    1997-01-01

    Anodic bonding of Si to Si four inch wafers using evaporated glass was performed in air at temperatures ranging from 300°C to 450°C. Although annealing of Si/glass structures around 340°C for 15 minutes eliminates stress, the bonded wafer pairs exhibit compressive stress. Pull testing revealed...

  14. Ab-initio electronic structure calculations and properties of [Si{sub x}Sn{sub 1−x}]{sub 3}N{sub 4} ternary nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Pavloudis, Th. [Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece); Zervos, M. [Nanostructured Materials and Devices Laboratory, Department of Mechanical and Manufacturing Engineering, PO Box 20537, Nicosia 1678 (Cyprus); Komninou, Ph. [Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece); Kioseoglou, J., E-mail: sifisl@auth.gr [Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece)

    2016-08-31

    We carry out ab initio electronic structure calculations of (Si{sub x}Sn{sub 1−x}){sub 3}N{sub 4} using density functional theory with projector augmented-wave potentials under the generalized gradient approximation. We find that the energetically favorable structure of Sn{sub 3}N{sub 4} is the face-centered cubic spinel structure, followed by the hexagonal structure which has energy band gaps of 1.85 eV and 1.44 eV respectively. The (Si{sub x}Sn{sub 1−x}){sub 3}N{sub 4} ternary compound can exhibit both cubic and hexagonal crystal structures over the full range of x. However, the cubic structure is found to be energetically favorable for x < 0.3 above which the hexagonal structure of (Si{sub x}Sn{sub 1−x}){sub 3}N{sub 4} dominates. The energy band gap can be tuned continuously from 1.44 eV up to 5.8 eV in the case of the hexagonal crystal structure of (Si{sub x}Sn{sub 1−x}){sub 3}N{sub 4} and from 1.85 eV to 4.82 eV in the case of cubic (Si{sub x}Sn{sub 1−x}){sub 3}N{sub 4}. Nevertheless the energy gap of (Si{sub x}Sn{sub 1−x}){sub 3}N{sub 4} is direct only for x < 0.3 when it is cubic and for x < 0.5 when hexagonal. - Highlights: • (Si{sub x}Sn{sub 1−x}){sub 3}N{sub 4} exhibits both cubic and hexagonal crystal structures. • The cubic structure is favorable for x < 0.3 and the hexagonal structure for x > 0.3. • The bandgap of hexagonal (Si{sub x}Sn{sub 1−x}){sub 3}N{sub 4} may be tuned from 1.44 eV up to 5.8 eV. • The bandgap may be tuned from 1.85 eV to 4.82 eV for the cubic (Si{sub x}Sn{sub 1−x}){sub 3}N{sub 4}. • Bandgaps are direct for x < 0.3 (cubic) and for x < 0.5 3 (hexagonal (Si{sub x}Sn{sub 1−x}){sub 3}N{sub 4}).

  15. Applications of Si/SiGe heterostructures to CMOS devices

    International Nuclear Information System (INIS)

    Sidek, R.M.

    1999-03-01

    For more than two decades, advances in MOSFETs used in CMOS VLSI applications have been made through scaling to ever smaller dimensions for higher packing density, faster circuit speed and lower power dissipation. As scaling now approaches nanometer regime, the challenge for further scaling becomes greater in terms of technology as well as device reliability. This work presents an alternative approach whereby non-selectively grown Si/SiGe heterostructure system is used to improve device performance or to relax the technological challenge. SiGe is considered to be of great potential because of its promising properties and its compatibility with Si, the present mainstream material in microelectronics. The advantages of introducing strained SiGe in CMOS technology are examined through two types of device structure. A novel structure has been fabricated in which strained SiGe is incorporated in the source/drain of P-MOSFETs. Several advantages of the Si/SiGe source/drain P-MOSFETs over Si devices are experimentally, demonstrated for the first time. These include reduction in off-state leakage and punchthrough susceptibility, degradation of parasitic bipolar transistor (PBT) action, suppression of CMOS latchup and suppression of PBT-induced breakdown. The improvements due to the Si/SiGe heterojunction are supported by numerical simulations. The second device structure makes use of Si/SiGe heterostructure as a buried channel to enhance the hole mobility of P-MOSFETs. The increase in the hole mobility will benefit the circuit speed and device packing density. Novel fabrication processes have been developed to integrate non-selective Si/SiGe MBE layers into self-aligned PMOS and CMOS processes based on Si substrate. Low temperature processes have been employed including the use of low-pressure chemical vapor deposition oxide and plasma anodic oxide. Low field mobilities, μ 0 are extracted from the transfer characteristics, Id-Vg of SiGe channel P-MOSFETs with various Ge

  16. Si nanoparticle interfaces in Si/SiO solar cell materials

    DEFF Research Database (Denmark)

    Kilpeläinen, S.; Kujala, J.; Tuomisto, F.

    2013-01-01

    Novel solar cell materials consisting of Si nanoparticles embedded in SiO2 layers have been studied using positron annihilation spectroscopy in Doppler broadening mode and photoluminescence. Two positron-trapping interface states are observed after high temperature annealing at 1100 °C. One...... of the states is attributed to the (SiO2/Si bulk) interface and the other to the interface between the Si nanoparticles and SiO2. A small reduction in positron trapping into these states is observed after annealing the samples in N2 atmosphere with 5% H2. Enhanced photoluminescence is also observed from...... the samples following this annealing step....

  17. Determination of molecular stopping cross section of {sup 12}C, {sup 16}O, {sup 28}Si, {sup 35}Cl, {sup 58}Ni, {sup 79}Br, and {sup 127}I in silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Barradas, N.P., E-mail: nunoni@ctn.ist.utl.pt [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Unversidade de Lisboa, Estrada Nacional 10 ao km 139.7, 2695-066 Bobadela LRS (Portugal); Bergmaier, A. [Institut für Angewandte Physik und Messtechnik, Fakultät für Luft und Raumfahrttechnik, Werner-Heisenberg-Weg 39, D-85577 Neubiberg (Germany); Mizohata, K. [Department of Physics, University of Helsinki, P.O. Box 43, FI-00014 University of Helsinki (Finland); Msimanga, M. [iThemba LABS Gauteng, National Research Foundation, Private Bag 11, WITS 2050, Johannesburg (South Africa); Department of Physics, Tshwane University of Technology, Private Bag X680, Pretoria 0001 (South Africa); Räisänen, J. [Department of Physics, University of Helsinki, P.O. Box 43, FI-00014 University of Helsinki (Finland); Sajavaara, T. [Department of Physics, University of Jyväskylä, Survontie 9, 40014 Jyväskylä (Finland); Simon, A. [International Atomic Energy Agency, Division of Physical and Chemical Sciences, Vienna International Centre, P.O. Box 100, A-1400 Vienna (Austria); Institute of Nuclear Research of the Hungarian Academy of Sciences, (ATOMKI), P.O. Box 51, H-4001 Debrecen (Hungary)

    2015-10-01

    Silicon nitride is a technologically important material in a range of applications due to a combination of important properties. Ion beam analysis techniques, and in particular, heavy ion elastic recoil detection analysis can be used to determine the stoichiometry of silicon nitride films, which often deviates from the ideal Si{sub 3}N{sub 4}, as well as the content of impurities such as hydrogen, even in the presence of other materials or in a matrix containing heavier elements. Accurate quantification of IBA results depends on the basic data used in the data analysis. Quantitative depth profiling relies on the knowledge of the stopping power cross sections of the materials studied for the ions involved, which in the case of HI-ERDA is both the primary beam, and the recoiled species. We measured the stopping cross section of {sup 12}C, {sup 16}O, {sup 28}Si, {sup 35}Cl, {sup 58}Ni, {sup 79}Br, and {sup 127}I in a well-characterised silicon nitride membrane. The measurements were made by independent groups utilising different experimental setups and methods. In some cases there is extensive overlap of the energy range in different experiments, allowing a comparison of the different results. The four independent data sets reported in this work are in excellent agreement with each other, in the cases where similar energy ranges were measured. On the other hand, the data are in most cases higher than calculations made with the interpolative schemes SRIM and MSTAR together with the Bragg rule. Better agreement is found with MSTAR in some of the cases studied. This work is a significant extension of the heavy ion stopping power data base for silicon nitride.

  18. Reliability implications of defects in high temperature annealed Si/SiO2/Si structures

    International Nuclear Information System (INIS)

    Warren, W.L.; Fleetwood, D.M.; Shaneyfelt, M.R.; Winokur, P.S.; Devine, R.A.B.; Mathiot, D.; Wilson, I.H.; Xu, J.B.

    1994-01-01

    High-temperature post-oxidation annealing of poly-Si/SiO 2 /Si structures such as metal-oxide-semiconductor capacitors and metal-oxide-semiconductor field effect transistors is known to result in enhanced radiation sensitivity, increased 1/f noise, and low field breakdown. The authors have studied the origins of these effects from a spectroscopic standpoint using electron paramagnetic resonance (EPR) and atomic force microscopy. One result of high temperature annealing is the generation of three types of paramagnetic defect centers, two of which are associated with the oxide close to the Si/SiO 2 interface (oxygen-vacancy centers) and the third with the bulk Si substrate (oxygen-related donors). In all three cases, the origin of the defects may be attributed to out-diffusion of O from the SiO 2 network into the Si substrate with associated reduction of the oxide. The authors present a straightforward model for the interfacial region which assumes the driving force for O out-diffusion is the chemical potential difference of the O in the two phases (SiO 2 and the Si substrate). Experimental evidence is provided to show that enhanced hole trapping and interface-trap and border-trap generation in irradiated high-temperature annealed Si/SiO 2 /Si systems are all related either directly, or indirectly, to the presence of oxygen vacancies

  19. Photoluminescence from SiO sub 2 /Si/SiO sub 2 structures

    CERN Document Server

    Photopoulos, P

    2003-01-01

    Si layers were developed on pre-oxidized Si wafers by decomposition of silane in a low pressure chemical vapour deposition reactor. By keeping the deposition time constant (2 min) three sets of samples were fabricated at deposition temperatures equal to 580, 610 and 625 deg C. The deposited Si layers were thinned by high temperature dry oxidation thus forming SiO sub 2 /Si/SiO sub 2 structures. Room temperature photoluminescence (PL) measurements showed that for those samples in which the thickness of the remaining Si layer was greater than approx 6 nm, the spectra exhibited a peak at approx 650 nm. Prolonged oxidations led to the formation of SiO sub 2 /nanocrystalline-Si/SiO sub 2 structures in which the thickness of the remaining nanocrystalline Si (nc-Si) layer was smaller than 3 nm. The PL spectra obtained from these structures were at least ten times stronger compared to the previous ones. The PL peak wavelength exhibited a weak dependence on the nc-Si layer thickness shifting from 800 to 720 nm for nc-...

  20. Characterization of Si nanocrystals into SiO2 matrix

    International Nuclear Information System (INIS)

    Gravalidis, C.; Logothetidis, S.; Hatziaras, N.; Laskarakis, A.; Tsiaoussis, I.; Frangis, N.

    2006-01-01

    Silicon nanocrystals (nc-Si) have gained great interest due to their excellent optical and electronic properties and their applications in optoelectronics. The aim of this work is the study of growth mechanism of nc-Si into a-SiO 2 matrix from SiO/SiO 2 multilayer annealing, using non-destructive and destructive techniques. The multilayer were grown by e-beam evaporation from SiO and SiO 2 materials and annealing at temperatures up to 1100 deg. C in N 2 atmosphere. X-rays reflectivity (XRR) and high resolution transmission electron microscopy (HRTEM) were used for the structural characterization and spectroscopic ellipsometry in IR (FTIRSE) energy region for the study of the bonding structure. The ellipsometric results gave a clear evidence of the formation of an a-SiO 2 matrix after the annealing process. The XRR data showed that the density is being increased in the range from 25 to 1100 deg. C. Finally, the HRTEM characterization proved the formation of nc-Si. Using the above results, we describe the growth mechanism of nc-Si into SiO 2 matrix under N 2 atmosphere

  1. High-frequency oscillations in an alpha-Si/Si(p)/Si(n) device

    CERN Document Server

    Dorosinets, V A; Roskos, H; Kyritsi, K; Anagnostopoulos, A N; Bleris, G L

    2003-01-01

    An alpha-Si/Si(p)/Si(n) heterojunction transistor exhibits current oscillations, which depending on the applied base-emitter voltage are either periodic or chaotic. The frequency dependence of the oscillations on the collector-emitter and the base-emitter voltage as well as on the load resistance, are presented.

  2. Growth of amorphous and epitaxial ZnSiP2Si alloys on Si

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, Aaron D. [National Renewable Energy Laboratory; Golden; USA; Department of Physics; Colorado School of Mines; Miller, Elisa M. [National Renewable Energy Laboratory; Golden; USA; Norman, Andrew G. [National Renewable Energy Laboratory; Golden; USA; Schnepf, Rekha R. [National Renewable Energy Laboratory; Golden; USA; Department of Physics; Colorado School of Mines; Leick, Noemi [National Renewable Energy Laboratory; Golden; USA; Perkins, Craig [National Renewable Energy Laboratory; Golden; USA; Stradins, Paul [National Renewable Energy Laboratory; Golden; USA; Department of Physics; Colorado School of Mines; Toberer, Eric S. [National Renewable Energy Laboratory; Golden; USA; Department of Physics; Colorado School of Mines; Tamboli, Adele C. [National Renewable Energy Laboratory; Golden; USA; Department of Physics; Colorado School of Mines

    2018-01-01

    ZnSiP2is a wide band gap material lattice matched with Si, with potential for Si-based optoelectronics. Here, amorphous ZnSiP2Si alloys are grown with tunable composition. Films with Si-rich compositions can be crystallized into epitaxial films.

  3. Carbon redistribution and precipitation in high temperature ion-implanted strained Si/SiGe/Si multi-layered structures

    DEFF Research Database (Denmark)

    Gaiduk, Peter; Hansen, John Lundsgaard; Nylandsted Larsen, Arne

    2014-01-01

    Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects.......Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects....

  4. ''114''-type nitrides LnAl(Si{sub 4-x}Al{sub x})N{sub 7}O{sub δ} with unusual [AlN{sub 6}] octahedral coordination

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Saifang; Ouyang, Xin [School of Materials Science and Technology, China University of Geosciences, Beijing (China); Department of Chemical and Materials Engineering, University of Auckland (New Zealand); Huang, Zhaohui; Fang, Minghao; Liu, Yan-gai [School of Materials Science and Technology, China University of Geosciences, Beijing (China); Cao, Peng; Gao, Wei [Department of Chemical and Materials Engineering, University of Auckland (New Zealand); Zujovic, Zoran; Soehnel, Tilo [School of Chemical Sciences, University of Auckland (New Zealand); Price, Jason R. [Australian Synchrotron, Clayton, VIC (Australia); Avdeev, Maxim [Australian Centre for Neutron Scattering, Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Que, Meidan [School of Electronic and Information Engineering, Xi' an Jiaotong University (China); Suzuki, Furitsu; Kido, Tsuyoshi; Kaji, Hironori [Institute for Chemical Research, Kyoto University (Japan)

    2017-03-27

    Aluminum-nitrogen six-fold octahedral coordination, [AlN{sub 6}], is unusual and has only been seen in the high-pressure rocksalt-type aluminum nitride or some complex compounds. Herein we report novel nitrides LnAl(Si{sub 4-x}Al{sub x})N{sub 7}O{sub δ} (Ln=La, Sm), the first inorganic compounds with [AlN{sub 6}] coordination prepared via non-high-pressure synthesis. Structure refinements of neutron powder diffraction and single-crystal X-ray diffraction data show that these compounds crystallize in the hexagonal Swedenborgite structure type with P6{sub 3}mc symmetry where Ln and Al atoms locate in anticuboctahedral and octahedral interstitials, respectively, between the triangular and Kagome layers of [SiN{sub 4}] tetrahedra. Solid-state NMR data of high-purity La-114 powders confirm the unusual [AlN{sub 6}] coordination. These compounds are the first examples of the ''33-114'' sub-type in the ''114'' family. The additional site for over-stoichiometric oxygen in the structure of 114-type compounds was also identified. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Characterization of rare-earth doped Si 3 N4 /SiC micro/nanocomposites

    Directory of Open Access Journals (Sweden)

    Peter Tatarko

    2010-03-01

    Full Text Available Influence of various rare-earth oxide additives (La2O3, Nd2O3, Sm2O3, Y2O3, Yb2O3 and Lu2O3 on the mechanical properties of hot-pressed silicon nitride and silicon nitride/silicon carbide micro/nano-composites has been investigated. The bimodal character of microstructures was observed in all studied materials where elongated β-Si3N4 grains were embedded in the matrix of much finer Si3N4 grains. The fracture toughness values increased with decreasing ionic radius of rare-earth elements. The fracture toughness of composites was always lower than that of monoliths due to their finer Si3N4/SiC microstructures. Similarly, the hardness and bending strength values increased with decreasing ionic radius of rare-earth elements either in monoliths or composites. On the other hand, the positive influence of finer microstructure of the composites on strength was not observed due to the present defects in the form of SiC clusters and non-reacted carbon zones. Wear resistance at room temperature also increased with decreasing ionic radius of rare-earth element. Significantly improved creep resistance was observed in case either of composite materials or materials with smaller radius of RE3+.

  6. On the origin of the second-order nonlinearity in strained Si-SiN structures

    Science.gov (United States)

    Khurgin, J. B.; Stievater, T. H.; Pruessner, M. W.; Rabinovich, W. S.

    2015-12-01

    The development of efficient low-loss electro-optic and nonlinear components based on silicon or its related compounds, such as nitrides and oxides, is expected to dramatically enhance silicon photonics by eliminating the need for non-CMOS-compatible materials. While bulk Si is centrosymmetric and thus displays no second-order (\\c{hi}(2)) effects, a body of experimental evidence accumulated in the last decade demonstrates that when a strain gradient is present, a significant \\c{hi}(2) and Pockels coefficient can be observed. In this work we connect a strain-gradient-induced \\c{hi}(2) with another strain-gradient-induced phenomenon, the flexoelectric effect. We show that even in the presence of an extremely strong strain gradient, the degree by which a nonpolar material like Si can be altered cannot possibly explain the order of magnitude of observed chi^(2) phenomena. At the same time, in a polar material like SiN, each bond has a large nonlinear polarizability, so when the inversion symmetry is broken by a strain gradient, a small (few degrees) re-orientation of bonds can engender chi^(2) of the magnitude observed experimentally. It is our view therefore that the origin of the nonlinear and electro-optic effects in strained Si structures lies in not in the Si itself, but in the material providing the strain: the silicon nitride cladding.

  7. Synthesis and characterization of laminated Si/SiC composites

    Directory of Open Access Journals (Sweden)

    Salma M. Naga

    2013-01-01

    Full Text Available Laminated Si/SiC ceramics were synthesized from porous preforms of biogenous carbon impregnated with Si slurry at a temperature of 1500 °C for 2 h. Due to the capillarity infiltration with Si, both intrinsic micro- and macrostructure in the carbon preform were retained within the final ceramics. The SEM micrographs indicate that the final material exhibits a distinguished laminar structure with successive Si/SiC layers. The produced composites show weight gain of ≈5% after heat treatment in air at 1300 °C for 50 h. The produced bodies could be used as high temperature gas filters as indicated from the permeability results.

  8. Structure of MnSi on SiC(0001)

    Science.gov (United States)

    Meynell, S. A.; Spitzig, A.; Edwards, B.; Robertson, M. D.; Kalliecharan, D.; Kreplak, L.; Monchesky, T. L.

    2016-11-01

    We report on the growth and magnetoresistance of MnSi films grown on SiC(0001) by molecular beam epitaxy. The growth resulted in a textured MnSi(111) film with a predominantly [1 1 ¯0 ] MnSi (111 )∥[11 2 ¯0 ] SiC(0001) epitaxial relationship, as demonstrated by transmission electron microscopy, reflection high energy electron diffraction, and atomic force microscopy. The 500 ∘C temperature required to crystallize the film leads to a dewetting of the MnSi layer. Although the sign of the lattice mismatch suggested the films would be under compressive stress, the films acquire an in-plane tensile strain likely driven by the difference in thermal expansion coefficients between the film and substrate during annealing. As a result, the magnetoresistive response demonstrates that the films possess a hard-axis out-of-plane magnetocrystalline anisotropy.

  9. SiC/SiC Cladding Materials Properties Handbook

    Energy Technology Data Exchange (ETDEWEB)

    Snead, Mary A. [Brookhaven National Lab. (BNL), Upton, NY (United States); Katoh, Yutai [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Koyanagi, Takaaki [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Singh, Gyanender P. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2017-08-01

    When a new class of material is considered for a nuclear core structure, the in-pile performance is usually assessed based on multi-physics modeling in coordination with experiments. This report aims to provide data for the mechanical and physical properties and environmental resistance of silicon carbide (SiC) fiber–reinforced SiC matrix (SiC/SiC) composites for use in modeling for their application as accidenttolerant fuel cladding for light water reactors (LWRs). The properties are specific for tube geometry, although many properties can be predicted from planar specimen data. This report presents various properties, including mechanical properties, thermal properties, chemical stability under normal and offnormal operation conditions, hermeticity, and irradiation resistance. Table S.1 summarizes those properties mainly for nuclear-grade SiC/SiC composites fabricated via chemical vapor infiltration (CVI). While most of the important properties are available, this work found that data for the in-pile hydrothermal corrosion resistance of SiC materials and for thermal properties of tube materials are lacking for evaluation of SiC-based cladding for LWR applications.

  10. Fe3Si surface coating on SiFe steel

    International Nuclear Information System (INIS)

    Schneeweiss, O.; Pizurova, N.; Jiraskova, Y.; Zak, T.; Cornut, B.

    2000-01-01

    Fe 3 Si layers were prepared using chemical vapor deposition of Si on the surface of Go steel and its subsequent heat treatment. The changes in the structure and phase composition after different heat treatment conditions have been analyzed. The coating is characterized by high hardness, good corrosion resistance, high electrical resistivity, and the spin texture which differs from the steel substrate

  11. SiC-SiC Composite for Fuel Structure Applications

    Energy Technology Data Exchange (ETDEWEB)

    Yueh, Ken

    2017-12-22

    Extensive evaluation was performed to determine the suitability of using SiC composite as a boiling water reactor (BWR) fuel channel material. A thin walled SiC composite box, 10 cm in dimension by approximately 1.5 mm wall thickness was fabricated using chemical vapor deposition (CVD) for testing. Mechanical test results and performance evaluations indicate the material could meet BWR channel mechanical design requirement. However, large mass loss of up to 21% was measured in in-pile corrosion test under BWR-like conditions in under 3 months of irradiation. A fresh sister sample irradiated in a follow-up cycle under PWR conditions showed no measureable weight loss and thus supports the hypothesis that the oxidizing condition of the BWR-like coolant chemistry was responsible for the high corrosion rate. A thermodynamic evaluation showed SiC is not stable and the material may oxidize to form SiO2 and CO2. Silica has demonstrated stability in high temperature steam environment and form a protective oxide layer under severe accident conditions. However, it does not form a protective layer in water under normal BWR operational conditions due to its high solubility. Corrosion product stabilization by modifying the SiC CVD surface is an approach evaluated in this study to mitigate the high corrosion rate. Titanium and zirconium have been selected as stabilizing elements since both TiSiO4 and ZrSiO4 are insoluble in water. Corrosion test results in oxygenated water autoclave indicate TiSiO4 does not form a protective layer. However, zirconium doped test samples appear to form a stable continuous layer of ZrSiO4 during the corrosion process. Additional process development is needed to produce a good ZrSiC coating to verify functionality of the mitigation concept.

  12. Compatibility of SiC and SiC Composites with Molten Lead

    Energy Technology Data Exchange (ETDEWEB)

    H Tunison

    2006-03-07

    The choice of structural material candidates to contain Lead at 1000 C are limited in number. Silicon carbide composites comprise one choice of possible containment materials. Short term screening studies (120 hours) were undertaken to study the behavior of Silicon Carbide, Silicon Nitride, elemental Silicon and various Silicon Carbide fiber composites focusing mainly on melt infiltrated composites. Isothermal experiments at 1000 C utilized graphite fixtures to contain the Lead and material specimens under a low oxygen partial pressure environment. The corrosion weight loss values (grams/cm{sup 2} Hr) obtained for each of the pure materials showed SiC (monolithic CVD or Hexoloy) to have the best materials compatibility with Lead at this temperature. Increased weight loss values were observed for pure Silicon Nitride and elemental Silicon. For the SiC fiber composite samples those prepared using a SiC matrix material performed better than Si{sub 3}N{sub 4} as a matrix material. Composites prepared using a silicon melt infiltration process showed larger corrosion weight loss values due to the solubility of silicon in lead at these temperatures. When excess silicon was removed from these composite samples the corrosion performance for these material improved. These screening studies were used to guide future long term exposure (both isothermal and non-isothermal) experiments and Silicon Carbide composite fabrication work.

  13. Measurements, Standards, and the SI.

    Science.gov (United States)

    Journal of Chemical Education, 1983

    1983-01-01

    Highlights six papers presented at the Seventh Biennial Conference on Chemical Education (Stillwater, Oklahoma 1982). Topics addressed included history, status, and future of SI units, algebra of SI units, periodic table, new standard-state pressure unit, and suggested new names for mole concept ("numerity" and "chemical amount"). (JN)

  14. SiNTO EWT silicon solar cells

    OpenAIRE

    Fallisch, A.; Keding, R.; Kästner, G.; Bartsch, J.; Werner, S.; Stüwe, D.; Specht, J.; Preu, R.; Biro, D.

    2010-01-01

    In this work we combine the SiNTO cell process with the EWT cell concept. All masking steps are performed by inkjet printing technology. The via-holes and laser-fired contacts are created by high-speed laser drilling. A new polishing process, which is suitable for inkjet masking, to pattern the interdigitated grid on the rear side is developed. For passivation purposes a thermal silicon oxide is used for the rear surface and a silicon nitride antireflection coating for the front surface. An e...

  15. Mechanics of patterned helical Si springs on Si substrate.

    Science.gov (United States)

    Liu, D L; Ye, D X; Khan, F; Tang, F; Lim, B K; Picu, R C; Wang, G C; Lu, T M

    2003-12-01

    The elastic response, including the spring constant, of individual Si helical-shape submicron springs, was measured using a tip-cantilever assembly attached to a conventional atomic force microscope. The isolated, four-turn Si springs were fabricated using oblique angle deposition with substrate rotation, also known as the glancing angle deposition, on a templated Si substrate. The response of the structures was modeled using finite elements, and it was shown that the conventional formulae for the spring constant required modifications before they could be used for the loading scheme used in the present experiment.

  16. Improvement of parameters in a-Si(p)/c-Si(n)/a-Si(n) solar cells

    Science.gov (United States)

    Moustafa Bouzaki, Mohammed; Aillerie, Michel; Ould Saad Hamady, Sidi; Chadel, Meriem; Benyoucef, Boumediene

    2016-10-01

    We analyzed and discussed the influence of thickness and doping concentration of the different layers in a-Si(p)/c-Si(n)/a-Si(n) photovoltaic (PV) cells with the aim of increasing its efficiency while decreasing its global cost. Compared to the efficiency of a standard marketed PV cell, elaborated with a ZnO transparent conductive oxide (TCO) layer but without Back Surface Field (BSF) layer, an optimization of the thickness and dopant concentration of both the emitter a-Si(p) and absorber c-Si(n) layers will gain about 3% in the global efficiency of the cell. The results also reveal that with introduction of the third layer, i.e. the BSF layer, the efficiency always achieves values above 20% and all other parameters of the cell, such as the open-circuit voltage, the short-circuit current and the fill-factor, are strongly affected by the thickness and dopant concentration of the layers. The values of all parameters are given and discussed in the paper. Thereby, the simulation results give for an optimized a-Si(p)/c-Si(n)/a-Si(n) PV cells the possibility to decrease the thickness of the absorber layer down to 50 μm which is lower than in the state-of-the-art. This structure of the cell achieves suitable properties for high efficiency, cost-effectiveness and reliable heterojunction (HJ) solar cell applications.

  17. Analysis of the properties of silicon nitride based ceramic (Si{sub 3}N{sub 4}) cutting tool using different addictive; Analise das propriedades de ferramenta de corte ceramicas de nitreto de silicio (Si{sub 3}N{sub 4}) usando diferentes aditivos

    Energy Technology Data Exchange (ETDEWEB)

    Pereira, Joaquim Lopes; Souza, Jose Vitor Candido de; Raymundo, Emerson Augusto [Centro Universitario de Volta Redonda (UNIFOA), Volta Redonda, RJ (Brazil); Silva, Oliverio Macedo Moreira [Centro Tecnico Aeroespacial (CTA), Sao Jose dos Campos, SP (Brazil)

    2013-06-15

    The constant search for new materials is part of the scientific and technological development of the industries. Ceramic been presenting important developments in terms of scientific and technological development, highlighting the predominance of covalent ceramics, which has important applications where abrasion resistance and hardness are required. Between covalent materials, several research papers in search of property improvements and cost reduction. However the production of ceramics of silicon nitride (Si{sub 3}N{sub 4}) with a reduced cost is possible only if used methods and different additives. The aim of this work is the development of compositions based on silicon nitride (Si{sub 3}N{sub 4}) using different additives such as Y{sub 2}O{sub 3}, CeO{sub 2}, Al{sub 2}O{sub 3} , and CTR{sub 2}O{sub 3} in varying amounts. For the development of ceramics, the mixtures were homogenized, dried, compacted and sintered using the sintering process of 1850°C for 1 hour, with a heating rate of 25°C/min. The characterizations were performed as a function of relative density by Archimedes method, the mass loss measured before and after sintering, phase analysis by X-ray diffraction, microstructure by scanning electron microscopy (SEM), and hardness and fracture toughness indentation method. The results showed relative density 97-98, Vickers hardness 17-19 GPa, fracture toughness from 5.6 to 6.8 MPa.m{sup 1/2}. The different phases were obtained depending on the types of additives used. The obtained results are promising for tribological applications. (author)

  18. Biomorphous SiSiC/Al-Si ceramic composites manufactured by squeeze casting: microstructure and mechanical properties

    Energy Technology Data Exchange (ETDEWEB)

    Zollfrank, C.; Travitzky, N.; Sieber, H.; Greil, P. [Department of Materials Science, Glass and Ceramics, University of Erlangen-Nuernberg (Germany); Selchert, T. [Advanced Ceramics Group, Technical University of Hamburg-Harburg (Germany)

    2005-08-01

    SiSiC/Al-Si composites were fabricated by pressure-assisted infiltration of an Al-Si alloy into porous biocarbon preforms derived from the rattan palm. Al-Si alloy was found in the pore channels of the biomorphous SiSiC preform, whereas SiC and carbon were present in the struts. The formation of a detrimental Al{sub 4}C{sub 3}-phase was not observed in the composites. A bending strength of 200 MPa was measured. The fractured surfaces showed pull-out of the Al-alloy. (Abstract Copyright [2005], Wiley Periodicals, Inc.)

  19. Electrical conduction of Si/indium tin oxide/Si junctions fabricated by surface activated bonding

    Science.gov (United States)

    Liang, Jianbo; Ogawa, Tomoki; Hara, Tomoya; Araki, Kenji; Kamioka, Takefumi; Shigekawa, Naoteru

    2018-02-01

    The electrical properties of n+-Si//indium tin oxide (ITO)/n+-Si, n+-Si//ITO/p+-Si, and p+-Si//ITO/n+-Si junctions fabricated by surface activated bonding (SAB) were investigated. The current-voltage (I-V) characteristics of n+-Si//ITO/n+-Si, n+-Si//ITO/p+-Si, and p+-Si//ITO/n+-Si junctions showed excellent linear properties. The interface resistances of n+-Si//ITO/n+-Si, n+-Si//ITO/p+-Si, and p+-Si//ITO/n+-Si junctions were found to be 0.030, 0.025, and 0.029 Ω·cm2, respectively, which are lower than required for concentrator photovoltaics. The interface resistances of all the junctions increased with increasing annealing temperature. The degradation of the interface resistance is lower in n+-Si//ITO/n+-Si junctions than in n+-Si//ITO/p+-Si and p+-Si//ITO/n+-Si junctions, when the annealing temperature is higher than 100 °C. These results demonstrate that the ITO thin film as an intermediate layer has high potential application for the connection of subcells in the fabrication of tandem solar cells.

  20. Low dose irradiation performance of SiC interphase SiC/SiC composites

    International Nuclear Information System (INIS)

    Snead, L.L.; Lowden, R.A.; Strizak, J.; More, K.L.; Eatherly, W.S.; Bailey, J.; Williams, A.M.; Osborne, M.C.; Shinavski, R.J.

    1998-01-01

    Reduced oxygen Hi-Nicalon fiber reinforced composite SiC materials were densified with a chemically vapor infiltrated (CVI) silicon carbide (SiC) matrix and interphases of either 'porous' SiC or multilayer SiC and irradiated to a neutron fluence of 1.1 x 10 25 n m -2 (E>0.1 MeV) in the temperature range of 260 to 1060 C. The unirradiated properties of these composites are superior to previously studied ceramic grade Nicalon fiber reinforced/carbon interphase materials. Negligible reduction in the macroscopic matrix microcracking stress was observed after irradiation for the multilayer SiC interphase material and a slight reduction in matrix microcracking stress was observed for the composite with porous SiC interphase. The reduction in strength for the porous SiC interfacial material is greatest for the highest irradiation temperature. The ultimate fracture stress (in four point bending) following irradiation for the multilayer SiC and porous SiC interphase materials was reduced by 15% and 30%, respectively, which is an improvement over the 40% reduction suffered by irradiated ceramic grade Nicalon fiber materials fabricated in a similar fashion, though with a carbon interphase. The degradation of the mechanical properties of these composites is analyzed by comparison with the irradiation behavior of bare Hi-Nicalon fiber and Morton chemically vapor deposited (CVD) SiC. It is concluded that the degradation of these composites, as with the previous generation ceramic grade Nicalon fiber materials, is dominated by interfacial effects, though the overall degradation of fiber and hence composite is reduced for the newer low-oxygen fiber. (orig.)

  1. Ge-on-Si optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Liu Jifeng, E-mail: Jifeng.Liu@Dartmouth.edu [Thayer School of Engineering, Dartmouth College, Hanover, NH 03755 (United States); Camacho-Aguilera, Rodolfo; Bessette, Jonathan T.; Sun, Xiaochen [Microphotonics Center, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Wang Xiaoxin [Thayer School of Engineering, Dartmouth College, Hanover, NH 03755 (United States); Cai Yan; Kimerling, Lionel C.; Michel, Jurgen [Microphotonics Center, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)

    2012-02-01

    Electronic-photonic synergy has become an increasingly clear solution to enhance the bandwidth and improve the energy efficiency of information systems. Monolithic integration of optoelectronic devices is the ideal solution for large-scale electronic-photonic synergy. Due to its pseudo-direct gap behavior in optoelectronic properties and compatibility with Si electronics, epitaxial Ge-on-Si has become an attractive solution for monolithic optoelectronics. In this paper we will review recent progress in Ge-on-Si optoelectronics, including photodetectors, electroabsorption modulators, and lasers. The performance of these devices has been enhanced by band-engineering such as tensile strain and n-type doping, which transforms Ge towards a direct gap material. Selective growth reduces defect density and facilitates monolithic integration at the same time. Ge-on-Si photodetectors have approached or exceeded the performance of their III-V counterparts, with bandwidth-efficiency product > 30 GHz for p-i-n photodiodes and bandwidth-gain product > 340 GHz for avalanche photodiodes. Enhanced Franz-Keldysh effect in tensile-strained Ge offers ultralow energy photonic modulation with < 30 fJ/bit energy consumption and > 100 GHz intrinsic bandwidth. Room temperature optically-pumped lasing as well as electroluminescence has also been achieved from the direct gap transition of band-engineered Ge-on-Si waveguides. These results indicate that band-engineered Ge-on-Si is promising to achieve monolithic active optoelectronic devices on a Si platform.

  2. Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO2/Si and SiO2/SiC structures

    International Nuclear Information System (INIS)

    Kobayashi, H.; Imamura, K.; Kim, W.-B.; Im, S.-S.; Asuha

    2010-01-01

    We have developed low temperature formation methods of SiO 2 /Si and SiO 2 /SiC structures by use of nitric acid, i.e., nitric acid oxidation of Si (or SiC) (NAOS) methods. By use of the azeotropic NAOS method (i.e., immersion in 68 wt% HNO 3 aqueous solutions at 120 deg. C), an ultrathin (i.e., 1.3-1.4 nm) SiO 2 layer with a low leakage current density can be formed on Si. The leakage current density can be further decreased by post-metallization anneal (PMA) at 200 deg. C in hydrogen atmosphere, and consequently the leakage current density at the gate bias voltage of 1 V becomes 1/4-1/20 of that of an ultrathin (i.e., 1.5 nm) thermal oxide layer usually formed at temperatures between 800 and 900 deg. C. The low leakage current density is attributable to (i) low interface state density, (ii) low SiO 2 gap-state density, and (iii) high band discontinuity energy at the SiO 2 /Si interface arising from the high atomic density of the NAOS SiO 2 layer. For the formation of a relatively thick (i.e., ≥10 nm) SiO 2 layer, we have developed the two-step NAOS method in which the initial and subsequent oxidation is performed by immersion in ∼40 wt% HNO 3 and azeotropic HNO 3 aqueous solutions, respectively. In this case, the SiO 2 formation rate does not depend on the Si surface orientation. Using the two-step NAOS method, a uniform thickness SiO 2 layer can be formed even on the rough surface of poly-crystalline Si thin films. The atomic density of the two-step NAOS SiO 2 layer is slightly higher than that for thermal oxide. When PMA at 250 deg. C in hydrogen is performed on the two-step NAOS SiO 2 layer, the current-voltage and capacitance-voltage characteristics become as good as those for thermal oxide formed at 900 deg. C. A relatively thick (i.e., ≥10 nm) SiO 2 layer can also be formed on SiC at 120 deg. C by use of the two-step NAOS method. With no treatment before the NAOS method, the leakage current density is very high, but by heat treatment at 400 deg. C in

  3. Determination of the contribution of defect creation and charge trapping to the degradation of a-Si:H/SiN TFTs at room temperature and low voltages

    NARCIS (Netherlands)

    Merticaru, A.R.; Mouthaan, A.J.; Kuper, F.G.

    2006-01-01

    In this paper is presented a qualitative investigation upon the mechanisms that cause the shift of the electrical parameters in thin film transistors (TFT). The transistors are made of amorphous hydrogenated silicon (a-Si:H) as active semiconductor layer and substoichiometric silicon nitride (SiN)

  4. Radiation emission from wrinkled SiGe/SiGe nanostructure

    Czech Academy of Sciences Publication Activity Database

    Fedorchenko, Alexander I.; Cheng, H. H.; Sun, G.; Soref, R. A.

    2010-01-01

    Roč. 96, č. 11 (2010), s. 113104-113107 ISSN 0003-6951 Institutional research plan: CEZ:AV0Z20760514 Keywords : SiGe wrinkled nanostructures * si-based optical emitter * synchrotron radiation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.820, year: 2010 http://apl.aip.org/resource/1/applab/v96/i11/p113104_s1?isAuthorized=no

  5. Surface texturing of Si3N4–SiC ceramic tool components by pulsed laser machining

    CSIR Research Space (South Africa)

    Tshabalala, LC

    2016-03-01

    Full Text Available Traditional abrasive techniques such as grinding and lapping have long been used in the surface conditioning of engineering materials. However, in the processing of hard and brittle materials like silicon nitride (Si(sub3)N(sub4)), machining...

  6. On the line intensity ratios of prominent Si II, Si III, and Si IV multiplets

    International Nuclear Information System (INIS)

    Djenize, S.; Sreckovic, A.; Bukvic, S.

    2010-01-01

    Line intensities of singly, doubly and triply ionized silicon (Si II, Si III, and Si IV, respectively) belonging to the prominent higher multiplets, are of interest in laboratory and astrophysical plasma diagnostics. We measured these line intensities in the emission spectra of pulsed helium discharge. The Si II line intensity ratios in the 3s3p 22 D-3s 2 4p 2 P o , 3s 2 3d 2 D-3s 2 4f 2 F o , and 3s 2 4p 2 P o -3s 2 4d 2 D transitions, the Si III line intensity ratios in the 3s3d 3 D-3s4p 3 P o , 3s4p 3 P o -3s4d 3 D, 3s4p 3 P o -3s5s 3 S, 3s4s 3 S-3s4p 3 P o , and 3s4f 3 F o -3s5g 3 G transitions, and the Si IV line intensity ratios in the 4p 2 P o -4d 2 D and 4p 2 P o -5s 2 S transitions were obtained in a helium plasma at an electron temperature of about 17,000 ± 2000 K. Line shapes were recorded using a spectrograph and an ICCD camera as a highly-sensitive detection system. The silicon atoms were evaporated from a Pyrex discharge tube designed for the purpose. They represent impurities in the optically thin helium plasma at the silicon ionic wavelengths investigated. The line intensity ratios obtained were compared with those available in the literature, and with values calculated on the basis of available transition probabilities. The experimental data corresponded well with line intensity ratios calculated using the transition probabilities obtained from a Multi Configuration Hartree-Fock approximation for Si III and Si IV spectra. We recommend corrections of some Si II transition probabilities.

  7. Large-scale preparation of faceted Si{sub 3}N{sub 4} nanorods from {beta}-SiC nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Bechelany, M; Brioude, A; Bernard, S; Ferro, G; Cornu, D; Miele, P [Laboratoire des Multimateriaux et Interfaces UMR 5615 CNRS-Universite Lyon 1, Universite de Lyon, 43 bd du 11 Novembre 1918, F-69622 Villeurbanne (France)

    2007-08-22

    Batch-fabricated SiC nanowires were heated under an ammoniac flow up to 1400 deg. C. The ensuing product was characterized by SEM, HRTEM, EDX and XRD. As we found, SiC nanowires were completely converted into faceted {alpha}-Si{sub 3}N{sub 4} nanorods with diameters ranging from 10 to 500 nm and lengths lower than 10 {mu}m. These nanorods present hexagonal cross sections. We suggest a growth mechanism based on the progressive elimination of carbon through hydrogenation reactions and the growth of silicon nitride nanorods via the high-temperature nitridation of silicon.

  8. 500C/3.8 kW-class Resonant-Mode Power Converter featuring SiC Super Junction Transistors Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Capitalizing on a potent confluence of expertise in III-Nitride epitaxy, GaN-Si power device designs, and wide-bandgap power electronics, researchers at GeneSiC...

  9. 300C/15 kW power converter with AlGaN/GaN-Si MOS-HFETs for electric propulsion systems, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Capitalizing on a strong expertise in III-Nitride epitaxy, GaN-Si power device designs, and wide-bandgap power electronics, researchers at GeneSiC Semiconductor...

  10. Ge /Si heteronanocrystal floating gate memory

    Science.gov (United States)

    Li, Bei; Liu, Jianlin; Liu, G. F.; Yarmoff, J. A.

    2007-09-01

    Metal oxide semiconductor field effect transistor memories with Ge /Si heteronanocrystals (HNCs) as floating gate were fabricated and characterized. Ge /Si HNCs with density of 5×1011cm-2 were grown on n-type Si (100) substrate with thin tunnel oxide on the top. Enhanced device performances including longer retention time, faster programming speed, and higher charge storage capability are demonstrated compared with Si nanocrystal (NC) memories. The erasing speed and endurance performance of Ge /Si HNC memories are similar to that of Si NC devices. The results suggest that Ge /Si HNCs may be an alternative to make further floating gate memory scaling down possible.

  11. Moisture barrier evaluation of SiO{sub x}/SiN{sub x} stacks on polyimide substrates using electrical calcium test

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Shiyu; Xue, Wei; Yu, Zhinong, E-mail: znyu@bit.edu.cn

    2015-04-01

    Electrical calcium (Ca) test was used to measure water vapor transmission rate (WVTR) through polyimide (PI) substrate with barrier films. The WVTR was obtained by measuring the resistance of the Ca as a function of time. Barrier films consisted of silicon oxide (SiO{sub x})/silicon nitride (SiN{sub x}) stacks were consecutively deposited onto the PI substrate at 350 °C by plasma-enhanced chemical vapor deposition. SiN{sub x} and SiO{sub x} films show great moisture impermeability while the SiN{sub x} film presented higher moisture resistance than the SiO{sub x} film. The sample of PI coated with SiO{sub x}/SiN{sub x} stacks was kept flat by stress compensation of SiN{sub x} film and SiO{sub x} film. The WVTR value of the optimum barrier structure (5 pairs of SiO{sub x}/SiN{sub x}) is 5.58 × 10{sup −6} g/(m{sup 2} day) under an electrical Ca test (25 °C, 40% relative humidity). After 500 times cyclic bending in a compressive mode, WVTR value keeps below 4.32 × 10{sup −5} g/(m{sup 2} day). The SiO{sub x}/SiN{sub x} barrier stacks presented on PI have a great potential for flexible electronics applications. - Highlights: • The electrical Ca test was used to measure water vapor transmission rate. • SiO{sub x}/SiN{sub x} stacks as diffusion barrier of water vapor are effective. • The optimum barrier structure is 5 pairs of SiO{sub x}/SiN{sub x}.

  12. Modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy

    Energy Technology Data Exchange (ETDEWEB)

    Wu Yuying [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China)], E-mail: wyy532001@163.com; Liu Xiangfa [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China); Shandong Binzhou Bohai Piston Co., Ltd., Binzhou 256602, Shandong (China); Jiang Binggang [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China); Huang Chuanzhen [School of Mechanical Engineering, Shandong University, Jinan 250061 (China)

    2009-05-27

    Modification effect of Ni-38 wt.%Si on the Al-12 wt.%Si alloy has been studied by differential scanning calorimeter, torsional oscillation viscometer and liquid X-ray diffraction experiments. It is found that there is a modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy, i.e. primary Si can precipitate in the microstructure of Al-12 wt.%Si alloy when Ni and Si added in the form of Ni-38 wt.%Si, but not separately. Ni-38 wt.%Si alloy brings 'genetic materials' into the Al-Si melt, which makes the melt to form more ordering structure, promotes the primary Si precipitated. Moreover, the addition of Ni-38 wt.%Si, which decreases the solidification supercooling degree of Al-12 wt.%Si alloy, is identical to the effect of heterogeneous nuclei.

  13. Emission Mechanisms of Si Nanocrystals and Defects in SiO2 Materials

    Directory of Open Access Journals (Sweden)

    José Antonio Rodríguez

    2014-01-01

    Full Text Available Motivated by the necessity to have all silicon optoelectronic circuits, researchers around the world are working with light emitting silicon materials. Such materials are silicon dielectric compounds with silicon content altered, such as silicon oxide or nitride, enriched in different ways with Silicon. Silicon Rich Oxide or silicon dioxide enriched with silicon, and silicon rich nitride are without a doubt the most promising materials to reach this goal. Even though they are subjected to countless studies, the light emission phenomenon has not been completely clarified. So, a review of different proposals presented to understand the light emission phenomenon including emissions related to nanocrystals and to point defects in SiO2 is presented.

  14. Construction and characterization of spherical Si solar cells combined with SiC electric power inverter

    Science.gov (United States)

    Oku, Takeo; Matsumoto, Taisuke; Hiramatsu, Kouichi; Yasuda, Masashi; Shimono, Akio; Takeda, Yoshikazu; Murozono, Mikio

    2015-02-01

    Spherical silicon (Si) photovoltaic solar cell systems combined with an electric power inverter using silicon carbide (SiC) field-effect transistor (FET) were constructed and characterized, which were compared with an ordinary Si-based converter. The SiC-FET devices were introduced in the direct current-alternating current (DC-AC) converter, which was connected with the solar panels. The spherical Si solar cells were used as the power sources, and the spherical Si panels are lighter and more flexible compared with the ordinary flat Si solar panels. Conversion efficiencies of the spherical Si solar cells were improved by using the SiC-FET.

  15. Si, Ge and SiGe wires for sensor application

    International Nuclear Information System (INIS)

    Druzhinin, A.A.; Khoverko, Yu.M.; Ostrovskii, I.P.; Nichkalo, S.I.; Nikolaeva, A.A.; Konopko, L.A.; Stich, I.

    2011-01-01

    Resistance and magnetoresistance of Si, Ge and Si-Ge micro- and nanowires were studied in temperature range 4,2-300 K at magnetic fields up to 14 T. The wires diameters range from 200 nm to 20 μm. Ga-In gates were created to wires and ohmic I-U characteristics were observed in all temperature range. It was found high elastic strain for Ge nanowires (of about 0,7%) as well as high magnitude of magnetoresistance (of about 250% at 14 T), which was used to design multifunctional sensor of simultaneous measurements of strain and magnetic field intensity. (authors)

  16. Designing the fiber volume ratio in SiC fiber-reinforced SiC ceramic composites under Hertzian stress

    International Nuclear Information System (INIS)

    Lee, Kee Sung; Jang, Kyung Soon; Park, Jae Hong; Kim, Tae Woo; Han, In Sub; Woo, Sang Kuk

    2011-01-01

    Highlights: → Optimum fiber volume ratios in the SiC/SiC composite layers were designed under Hertzian stress. → FEM analysis and spherical indentation experiments were undertaken. → Boron nitride-pyrocarbon double coatings on the SiC fiber were effective. → Fiber volume ratio should be designed against flexural stress. -- Abstract: Finite element method (FEM) analysis and experimental studies are undertaken on the design of the fiber volume ratio in silicon carbide (SiC) fiber-reinforced SiC composites under indentation contact stresses. Boron nitride (BN)/Pyrocarbon (PyC) are selected as the coating materials for the SiC fiber. Various SiC matrix/coating/fiber/coating/matrix structures are modeled by introducing a woven fiber layer in the SiC matrix. Especially, this study attempts to find the optimum fiber volume ratio in SiC fiber-reinforced SiC ceramics under Hertzian stress. The analysis is performed by changing the fiber type, fiber volume ratio, coating material, number of coating layers, and stacking sequence of the coating layers. The variation in the stress for composites in relation to the fiber volume ratio in the contact axial or radial direction is also analyzed. The same structures are fabricated experimentally by a hot process, and the mechanical behaviors regarding the load-displacement are evaluated using the Hertzian indentation method. Various SiC matrix/coating/fiber/coating/matrix structures are fabricated, and mechanical characterization is performed by changing the coating layer, according to the introduction (or omission) of the coating layer, and the number of woven fiber mats. The results show that the damage mode changes from Hertzian stress to flexural stress as the fiber volume ratio increases in composites because of the decreased matrix volume fraction, which intensifies the radial crack damage. The result significantly indicates that the optimum fiber volume ratio in SiC fiber-reinforced SiC ceramics should be designed for

  17. Study of High Quality Indium Nitride Films Grown on Si(100 Substrate by RF-MOMBE with GZO and AlN Buffer Layers

    Directory of Open Access Journals (Sweden)

    Wei-Chun Chen

    2012-01-01

    Full Text Available Wurtzite structure InN films were prepared on Si(100 substrates using radio-frequency metal-organic molecular beam epitaxy (RF-MOMBE system. Ga-doped ZnO (GZO and Amorphous AlN (a-AlN film were used as buffer layers for InN films growth. Structural, surface morphology and optical properties of InN films were investigated by X-ray diffraction (XRD, field emission scanning electron microscopy (FE-SEM, transmission electron microscopy (TEM, and photoluminescence (PL. XRD results indicated that all InN films exhibited preferred growth orientation along the c-axis with different intermediate buffers. TEM images exhibit the InN/GZO growth by two-dimensional mode and thickness about 900 nm. Also, the InN films can be obtained by growth rate about ~1.8 μm/h. Optical properties indicated that the band gap of InN/GZO is about 0.79 eV. These results indicate that the control of buffer layer is essential for engineering the growth of InN on silicon wafer.

  18. Structural TEM study of nonpolar a-plane gallium nitride grown on(112_0) 4H-SiC by organometallic vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Zakharov, Dmitri N.; Liliental-Weber, Zuzanna; Wagner, Brian; Reitmeier,Zachary J.; Preble, Edward A.; Davis, Robert F.

    2005-04-05

    Conventional and high resolution electron microscopy havebeen applied for studying lattice defects in nonpolar a-plane GaN grownon a 4H-SiC substrate with an AlN buffer layer. Samples in plan-view andcross-section configurations have been investigated. Basal and prismaticstacking faults together with Frank and Shockley partial dislocationswere found to be the main defects in the GaN layers. High resolutionelectron microscopy in combination with image simulation supported Drum smodel for the prismatic stacking faults. The density of basal stackingfaults was measured to be ~;1.6_106cm-1. The densities of partialdislocations terminating I1 and I2 types of intrinsic basal stackingfaults were ~;4.0_1010cm-2 and ~;0.4_1010cm-2, respectively. The energyof the I2 stacking fault in GaN was estimated to be (40+-4) erg/cm2 basedon the separation of Shockley partial dislocations. To the best of ourknowledge, the theoretically predicted I3 basal stacking fault in GaN wasobserved experimentally for the first time.

  19. Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation

    Science.gov (United States)

    Akiyama, Toru; Hori, Shinsuke; Nakamura, Kohji; Ito, Tomonori; Kageshima, Hiroyuki; Uematsu, Masashi; Shiraishi, Kenji

    2018-04-01

    The reaction processes at the interface between SiC with 4H structure (4H-SiC) and SiO2 during wet oxidation are investigated by electronic structure calculations within the density functional theory. Our calculations for 4H-SiC/SiO2 interfaces with various orientations demonstrate characteristic features of the reaction depending on the crystal orientation of SiC: On the Si-face, the H2O molecule is stable in SiO2 and hardly reacts with the SiC substrate, while the O atom of H2O can form Si-O bonds at the C-face interface. Two OH groups are found to be at least necessary for forming new Si-O bonds at the Si-face interface, indicating that the oxidation rate on the Si-face is very low compared with that on the C-face. On the other hand, both the H2O molecule and the OH group are incorporated into the C-face interface, and the energy barrier for OH is similar to that for H2O. By comparing the calculated energy barriers for these reactants with the activation energies of oxide growth rate, we suggest the orientation-dependent rate-limiting processes during wet SiC oxidation.

  20. Grafted SiC nanocrystals

    DEFF Research Database (Denmark)

    Saini, Isha; Sharma, Annu; Dhiman, Rajnish

    2017-01-01

    ), raman spectroscopy and X-ray diffraction (XRD) measurements. UV–Visible absorption spectroscopy was used to study optical properties such as optical energy gap (Eg), Urbach's energy (Eu), refractive index (n), real (ε1) and imaginary (ε2) parts of dielectric constant of PVA as well as PVA-g-SiC/PVA......) were determined. Microhardness measurements performed at an applied load of 9.8 mN showed an increase in the Knoop microhardness number (KHN) of PVA containing 0.015 wt% PVA-g-SiC nanocrystals. Detailed analysis of current-voltage data indicates that the conduction mechanism responsible for increase...... in conductivity of PVA-g-SiC/PVA nanocomposite film is voltage dependent and Schottky mechanism is the dominant conduction mechanism at medium and high voltage regions....

  1. High-dose MeV electron irradiation of Si-SiO2 structures implanted with high doses Si+

    Science.gov (United States)

    Kaschieva, S.; Angelov, Ch; Dmitriev, S. N.

    2018-03-01

    The influence was studied of 22-MeV electron irradiation on Si-SiO2 structures implanted with high-fluence Si+ ions. Our earlier works demonstrated that Si redistribution is observed in Si+-ion-implanted Si-SiO2 structures (after MeV electron irradiation) only in the case when ion implantation is carried out with a higher fluence (1016 cm-2). We focused our attention on the interaction of high-dose MeV electron irradiation (6.0×1016 cm-2) with n-Si-SiO2 structures implanted with Si+ ions (fluence 5.4×1016 cm-2 of the same order magnitude). The redistribution of both oxygen and silicon atoms in the implanted Si-SiO2 samples after MeV electron irradiation was studied by Rutherford back-scattering (RBS) spectroscopy in combination with a channeling technique (RBS/C). Our results demonstrated that the redistribution of oxygen and silicon atoms in the implanted samples reaches saturation after these high doses of MeV electron irradiation. The transformation of amorphous SiO2 surface into crystalline Si nanostructures (after MeV electron irradiation) was evidenced by atomic force microscopy (AFM). Silicon nanocrystals are formed on the SiO2 surface after MeV electron irradiation. The shape and number of the Si nanocrystals on the SiO2 surface depend on the MeV electron irradiation, while their size increases with the dose. The mean Si nanocrystals height is 16-20 nm after irradiation with MeV electrons at the dose of 6.0×1016 cm-2.

  2. Analysis of Si/SiGe Heterostructure Solar Cell

    Directory of Open Access Journals (Sweden)

    Ashish Kumar Singh

    2014-01-01

    Full Text Available Sunlight is the largest source of carbon-neutral energy. Large amount of energy, about 4.3 × 1020 J/hr (Lewis, 2005, is radiated because of nuclear fusion reaction by sun, but it is unfortunate that it is not exploited to its maximum level. Various photovoltaic researches are ongoing to find low cost, and highly efficient solar cell to fulfil looming energy crisis around the globe. Thin film solar cell along with enhanced absorption property will be the best, so combination of SiGe alloy is considered. The paper presented here consists of a numerical model of Si/Si1-xGex heterostructure solar cell. The research has investigated characteristics such as short circuit current density (Jsc, generation rate (G, absorption coefficient (α, and open circuit voltage (Voc with optimal Ge concentration. The addition of Ge content to Si layer will affect the property of material and can be calculated with the use of Vegard’s law. Due to this, short circuit current density increases.

  3. Spark plasma sintering of cBN(core/SiO2(shell powder prepared by rotary chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    Jianfeng Zhang

    2014-09-01

    Full Text Available SiO2 nanolayer coated cubic boron nitride (cBN, cBN(core/SiO2(shell powder, was prepared by rotary chemical vapor deposition. The cBN/SiO2 powder was densified by spark plasma sintering at 1873 K for 0.3 ks. The hexagonal boron nitride (hBN phase was not observed in the cBN–SiO2 composites, indicating that the SiO2 nanolayer depressed the phase transformation from cBN to hBN. The relative density of cBN–SiO2 increased with increasing SiO2 content (CSiO2. The highest hardness of the cBN–SiO2 composite was 17.5 GPa at CSiO2=38 wt% and a load of 0.98 N.

  4. Synthesis, Crystal Structure, and Luminescence Properties of Tunable Red-Emitting Nitride Solid Solutions (Ca1-xSrx)16Si17N34:Eu2+for White LEDs.

    Science.gov (United States)

    Chen, Hang; Ding, Jianyan; Ding, Xin; Wang, Xicheng; Cao, Yaxin; Zhao, Zhengyan; Wang, Yuhua

    2017-09-18

    A series of nitride solid solutions (Ca 1-x Sr x ) 16 Si 17 N 34 :0.03Eu 2+ were successfully synthesized through the conventional solid-state method. The electronic crystal structure and photoluminescence characteristics were studied in detail. The excitation in the near-ultraviolet and blue regions of the samples shows a broad band in the 250-550 nm range, which can match well with the n-UV and blue lighting-emitting diode chips. Partial substitution of Ca 2+ by Sr 2+ results in a redshift emission, and the impacts of Sr content on the luminescence were researched in detail. Under 410 nm excitation, the phosphor exhibited tunable red emission from 616 to 653 nm by changing the concentration of Sr 2+ . Based on the crystal data, the emission can be fitted into three distinguished Gaussian components, which are attributed to the different Eu 2+ luminescence centers occupied in three disparate Ca 2+ (Sr 2+ ) lattice sites. The temperature quenching property of the phosphor was also investigated, and the good thermal stability of the phosphors was analyzed through the activation energy for thermal quenching. And the obtained CCT values from 2642 to 2817 K are suitable for a warm white light region. All the results indicated that the phosphors have possible application in the warm white light-emitting diodes.

  5. Si Microwire Array Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Putnam, Morgan C.; Boettcher, Shannon W.; Kelzenberg, Michael D.; Turner-Evans, Daniel B.; Spurgeon, Joshua M.; Warren, Emily L.; Briggs, Ryan M.; Lewis, Nathan S.; Atwater, Harry A.

    2010-01-01

    Si microwire-array solar cells with Air Mass 1.5 Global conversion efficiencies of up to 7.9% have been fabricated using an active volume of Si equivalent to a 4 μm thick Si wafer. These solar cells exhibited open-circuit voltages of 500 mV, short-circuit current densities (J{sub sc}) of up to 24 mA cm{sup -2}, and fill factors >65% and employed Al{sub 2}O{sub 3} dielectric particles that scattered light incident in the space between the wires, a Ag back reflector that prevented the escape of incident illumination from the back surface of the solar cell, and an a-SiN{sub x}:H passivation/anti-reflection layer. Wire-array solar cells without some or all of these design features were also fabricated to demonstrate the importance of the light-trapping elements in achieving a high J{sub sc}. Scanning photocurrent microscopy images of the microwire-array solar cells revealed that the higher J{sub sc} of the most advanced cell design resulted from an increased absorption of light incident in the space between the wires. Spectral response measurements further revealed that solar cells with light-trapping elements exhibited improved red and infrared response, as compared to solar cells without light-trapping elements.

  6. Growth, structure and luminescence properties of multilayer Si/{beta}-FeSi{sub 2}NCs/Si/.../Si nanoheterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Galkin, Nikolay G., E-mail: ngalk@iacp.dvo.ru [Institute of Automation and Control Processes, FEB of RAS, Radio Str. 5, Vladivostok, 690041 (Russian Federation); Chusovitin, Evgeniy A. [Institute of Automation and Control Processes, FEB of RAS, Radio Str. 5, Vladivostok, 690041 (Russian Federation); Shamirsaev, Timur S.; Gutakovski, Anton K.; Latyshev, Alexander V. [Institute of Semiconductor Physics, SB of RAS, Academician Lavrentiev, 13, Novosibirsk, 630090 (Russian Federation)

    2011-10-03

    Multilayer structures (up to 15 layers) with {beta}-FeSi{sub 2} nanocrystallites (NCs) buried in silicon crystalline lattice were grown by successive repetition of reactive deposition epitaxy (RDE) or solid phase epitaxy (SPE) of thin iron film on Si(100) or Si(111) substrates and silicon molecular beam epitaxy (MBE) (100-200 nm). Cross-section high resolution transmission electron microscopy (HR TEM) images and ex situ optical and Raman spectroscopy data prove that NCs formed in silicon matrix have the structure and optical properties of {beta}-FeSi{sub 2}. The growth conditions provide no dislocations in silicon lattice were found in the course of TEM analysis. Two types of NCs depth distribution were observed: (i) layered that corresponds to iron RDE and (ii) uniform that occurs in the case of iron SPE. The uniform NCs distribution points out the fact that during a growth process NCs moves up to the surface. In spite of small nanocrystallites size (5-50 nm) and their distribution in silicon cap layers the significant photoluminescence (PL) signal at 0.8 eV was observed for all grown samples.

  7. Si-O-Si bond-angle distribution in vitreous silica from first-principles 29Si NMR analysis

    International Nuclear Information System (INIS)

    Mauri, Francesco; Pasquarello, Alfredo; Pfrommer, Bernd G.; Yoon, Young-Gui; Louie, Steven G.

    2000-01-01

    The correlation between 29 Si chemical shifts and Si-O-Si bond angles in SiO 2 is determined within density-functional theory for the full range of angles present in vitreous silica. This relation closely reproduces measured shifts of crystalline polymorphs. The knowledge of the correlation allows us to reliably extract from the experimental NMR spectrum the mean (151 degree sign ) and the standard deviation (11 degree sign ) of the Si-O-Si angular distribution of vitreous silica. In particular, we show that the Mozzi-Warren Si-O-Si angular distribution is not consistent with the NMR data. This analysis illustrates the potential of our approach for structural determinations of silicate glasses. (c) 2000 The American Physical Society

  8. Interaction in polysilazane/SiC powder systems

    Energy Technology Data Exchange (ETDEWEB)

    Boiteux, Y.P.

    1992-07-01

    Consolidation of ceramic precursor ceramic powder systems upon heating is investigated. A polysilazane (silicon nitride precursor) is chosen as ceramic precursor with a filler of a sub-micron SiC powder. A scheme to optimize the volume fraction of precursor is developed in order to maximize the density of the compacted samples in the green state. Different techniques are presented to improve the homogeneity of precursor distribution in the mixture. A microencapsulation technique is developed that leads to a uniform coating of precursor on individual SiC particles. Upon pyrolysis of systems with 20 wt% polysilazane, little shrinkage occurs. The SiC particles do not coarsen during the heat treatment. The precursor, upon pyrolysis, transforms into an amorphous ceramic phase that acts as a cement between SiC particles. This cement phase can remain amorphous up to 1500{degrees}C; and is best described as a siliconoxycarbide with or without traces of nitrogen. Elimination of nitrogen in the amorphous phase indicates that the filler material (SiC) has a strong influence on the pyrolysis behavior of the chosen polysilazane. The amorphous ceramic phase may crystallize between 1400 and 1500{degrees}C, and depending on the nature of the gas environment, the crystalline phases are SiC, Si or Si{sub 3}N{sub 4}. Mechanisms explaining the strength increase upon heat treatment are proposed. Redistribution of the precursor occurs by capillary forces or vapor phase diffusion and recondensation of volatile monomers. The confined pyrolysis of the precursor results in an increase of residual ceramic matter being decomposed inside the sample. Interfacial reaction between the native silica-rich surface layer on SiC particles and the precursor derived phase explains the high strength of the materials.

  9. Thermal Evaporation Synthesis and Optical Properties of ZnS Microbelts on Si and Si/SiO2 Substrates

    Science.gov (United States)

    Nguyen, V. N.; Khoi, N. T.; Nguyen, D. H.

    2017-06-01

    In this study, we report on the differences in optical properties of zinc sulfide (ZnS) microbelts grown on Si and Si/SiO2 substrates by a thermal evaporation method. Our investigation suggests that the composition and luminescence of the microbelts are dependent on the growth substrate. Field emission scanning electron microscopy images show the formation of nanoparticles with a diameter of 300-400 nm on ZnS microbelts grown on Si substrate. In addition, energy dispersive x-ray spectroscopy analysis combined with x-ray diffraction and Raman measurements reveal the existence of Si on these microbelts which may bond with O to form SiO2 or amorphous silica. In contrast, no Si presents on the microbelts grown on Si/SiO2 substrate. Moreover, photoluminescence measurement at 300 K shows a narrow emission peak in the near-ultraviolet region from microbelts grown on Si/SiO2 substrate but a broad emission band with multi-peaks from microbelts grown on Si substrate. The origin of the luminescence distinction between microbelts is discussed in terms of the differences in the growth substrates and compositions.

  10. Entrance channel excitations in the 28Si + 28Si reaction

    International Nuclear Information System (INIS)

    Decowski, P.; Gierlik, E.; Box, P.F.; Kamermans, R.; Nieuwenhuizen, G.J. van; Meijer, R.J.; Griffioen, K.A.; Wilschut, H.W.; Giorni, A.; Morand, C.; Demeyer, A.; Guinet, D.

    1991-01-01

    Velocity spectra of heavy ions produced in the 28 Si + 28 Si reaction at bombarding energies of 19.7 and 30 MeV/nucleon were measured and interpreted within the Q-optimum model extended by the inclusion of particle evaporation from excited fragments. Regions of forward angle spectra corresponding to the mutual excitation of the reaction partners with net mass transfer zero projected onto the Q-value variable show an enhancement at Q-values of -60 - -80 MeV (excitation energies of the reaction partners equal to 30 - 40 MeV). This energy range coincides with the region of 2ℎω - 3ℎω excitations characteristic for giant osciallations. This selective excitation, which occurs at a very early stage of the reaction (the cross section is the largest at very forward angles), provides an important doorway to other dissipative processes

  11. Modeling artificial graphene in Si/SiGe hetrostructures

    Science.gov (United States)

    Maurer, Leon; Gamble, John King; Moussa, Jonathan; Tracy, Lisa; Huang, Shih-Hsien; Chuang, Yen; Li, Jiun-Yun; Liu, Chih-Wen; Lu, Tzu-Ming

    Artificial graphene is a synthetic material made using a nanostructure with identical 2D potential wells arranged in a honeycomb lattice. Unlike normal graphene, the properties of artificial graphene can be controlled by changing the nanostructure geometry and adjusting applied voltages. We perform a theoretical study of artificial graphene formed from a 2D electron gas (2DEG) in Si/SiGe and Ge/SiGe heterostructures by a metal honeycomb gate and a global top gate. While many models of artificial graphene assume a simple form for the potential landscape in the 2DEG, we instead calculate the potential landscape for actual devices with a range of bias voltages and geometries. This allows us to find the resulting bandstructure and calculate transport parameters, which we compare directly to experimental results. Sandia is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the US Department of Energy's National Nuclear Security Administration under Contract No. DE-AC04-94AL85000. This work was funded by the Laboratory Directed Research and Development Program. The work at NTU was supported by the Ministry of Science and Technology (103-2622-E-002-031 and 103-2112-M- 002-002-MY3).

  12. Stress Analysis of SiC MEMS Using Raman Spectroscopy

    Science.gov (United States)

    Ness, Stanley J.; Marciniak, M. A.; Lott, J. A.; Starman, L. A.; Busbee, J. D.; Melzak, J. M.

    2003-03-01

    During the fabrication of Micro-Electro-Mechanical Systems (MEMS), residual stress is often induced in the thin films that are deposited to create these systems. These stresses can cause the device to fail due to buckling, curling, or fracture. Industry is looking for ways to characterize the stress during the deposition of thin films in order to reduce or eliminate device failure. Micro-Raman spectroscopy has been successfully used to characterize poly-Si MEMS devices made with the MUMPS® process. Raman spectroscopy was selected because it is nondestructive, fast and has the potential for in situ stress monitoring. This research attempts to use Raman spectroscopy to analyze the stress in SiC MEMS made with the MUSiC® process. Raman spectroscopy is performed on 1-2-micron-thick SiC thin films deposited on silicon, silicon nitride, and silicon oxide substrates. The most common poly-type of SiC found in thin film MEMS made with the MUSiC® process is 3C-SiC. Research also includes baseline spectra of 6H, 4H, and 15R poly-types of bulk SiC.

  13. Annealing effects on photoluminescence of SiNx films grown by PECVD

    International Nuclear Information System (INIS)

    Komarov, F.F.; Parkhomenko, I.N.; Vlasukova, L.A.; Milchanin, O.V.; Togambayeva, A.K.; Kovalchuk, N.S.

    2013-01-01

    Si-rich and N-rich silicon nitride films were deposited at low temperature 300 °C by using plasma-enhanced chemical vapor deposition (PECVD). The optical and structural properties of these films have been investigated by ellipsometry, Rutherford backscattering (RBS), transmission electron microscopy (TEM), Raman spectroscopy (RS) and photoluminescence (PL). The formation of silicon clusters in both Si-rich and N-rich silicon nitride films after annealing at 900 °C and 1000 °C for hour in N 2 ambient has been revealed by TEM. Dependency of PL spectra on stoichiometry and post-annealing temperature was analyzed. The contribution of Si and N-related defects in emitting properties of Si-rich and N-rich SiN x has been discussed. (authors)

  14. Surface passivation at low temperature of p- and n-type silicon wafers using a double layer a-Si:H/SiNx:H

    International Nuclear Information System (INIS)

    Focsa, A.; Slaoui, A.; Charifi, H.; Stoquert, J.P.; Roques, S.

    2009-01-01

    Surface passivation of bare silicon or emitter region is of great importance towards high efficiency solar cells. Nowadays, this is usually accomplished by depositing an hydrogenated amorphous silicon nitride (a-SiNx:H) layer on n + p structures that serves also as an excellent antireflection layer. On the other hand, surface passivation of p-type silicon is better assured by an hydrogenated amorphous silicon (a-Si:H) layer but suffers from optical properties. In this paper, we reported the surface passivation of p-type and n-type silicon wafers by using an a-Si:H/SiNx:H double layer formed at low temperature (50-400 deg. C) with ECR-PECVD technique. We first investigated the optical properties (refraction index, reflectance, and absorbance) and structural properties by FTIR (bonds Si-H, N-H) of the deposited films. The hydrogen content in the layers was determined by elastic recoil detection analysis (ERDA). The passivation effect was monitored by measuring the minority carrier effective lifetime vs. different parameters such as deposition temperature and amorphous silicon layer thickness. We have found that a 10-15 nm a-Si film with an 86 nm thick SiN layer provides an optimum of the minority carriers' lifetime. It increases from an initial value of about 50-70 μs for a-Si:H to about 760 and 800 μs for a-Si:H/SiNx:H on Cz-pSi and FZ-nSi, respectively, at an injection level 2 x 10 15 cm -3 . The effective surface recombination velocity, S eff , for passivated double layer on n-type FZ Si reached 11 cm/s and for FZ-pSi-14 cm/s, and for Cz-pSi-16-20 cm/s. Effect of hydrogen in the passivation process is discussed.

  15. Laser-controlled stress of Si nanocrystals in a free-standing Si /SiO2 superlattice

    Science.gov (United States)

    Khriachtchev, Leonid; Räsänen, Markku; Novikov, Sergei

    2006-01-01

    We report laser manipulations with stress at the nanoscale level. The continuous-wave Ar+ laser radiation melts Si nanocrystals in a free-standing Si /SiO2 superlattice. Silicon crystallization from the liquid phase leads to a compressive stress, which can be accurately tuned in the 3GPa range using laser annealing below the Si melting temperature and then recovered by laser annealing above the melting temperature. This allows investigations of various phenomena as a function of stress and makes a case of Si-nanocrystal memory with very long retention time, which can be written, erased, and read by optical means.

  16. Laser-controlled stress of Si nanocrystals in a free-standing Si/SiO2 superlattice

    International Nuclear Information System (INIS)

    Khriachtchev, Leonid; Raesaenen, Markku; Novikov, Sergei

    2006-01-01

    We report laser manipulations with stress at the nanoscale level. The continuous-wave Ar + laser radiation melts Si nanocrystals in a free-standing Si/SiO 2 superlattice. Silicon crystallization from the liquid phase leads to a compressive stress, which can be accurately tuned in the 3 GPa range using laser annealing below the Si melting temperature and then recovered by laser annealing above the melting temperature. This allows investigations of various phenomena as a function of stress and makes a case of Si-nanocrystal memory with very long retention time, which can be written, erased, and read by optical means

  17. Joining SI3N4 for Advanced Turbomachinery Applications

    Energy Technology Data Exchange (ETDEWEB)

    GLASS, S. JILL; LOEHMAN, RONALD E.; HOSKING, F. MICHAEL; STEPHENS JR., JOHN J.; VIANCO, PAUL T.; NEILSEN, MICHAEL K.; WALKER, CHARLES A.; POLLINGER, J.P.; MAHONEY, F.M.; QUILLEN, B.G.

    2000-07-01

    The main objective of this project was to develop reliable, low-cost techniques for joining silicon nitride (Si{sub 3}N{sub 4}) to itself and to metals. For Si{sub 3}N{sub 4} to be widely used in advanced turbomachinery applications, joining techniques must be developed that are reliable, cost-effective, and manufacturable. This project addressed those needs by developing and testing two Si{sub 3}N{sub 4} joining systems; oxynitride glass joining materials and high temperature braze alloys. Extensive measurements were also made of the mechanical properties and oxidation resistance of the braze materials. Finite element models were used to predict the magnitudes and positions of the stresses in the ceramic regions of ceramic-to-metal joints sleeve and butt joints, similar to the geometries used for stator assemblies.

  18. 3C-SiC nanocrystal growth on 10° miscut Si(001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Deokar, Geetanjali, E-mail: gitudeo@gmail.com [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); D' Angelo, Marie; Demaille, Dominique [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Cavellin, Catherine Deville [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Faculté des Sciences et Technologie UPEC, 61 av. De Gaulle, Créteil F-94010 (France)

    2014-04-01

    The growth of 3C-SiC nano-crystal (NC) on 10° miscut Si(001) substrate by CO{sub 2} thermal treatment is investigated by scanning and high resolution transmission electron microscopies. The vicinal Si(001) surface was thermally oxidized prior to the annealing at 1100 °C under CO{sub 2} atmosphere. The influence of the atomic steps at the vicinal SiO{sub 2}/Si interface on the SiC NC growth is studied by comparison with the results obtained for fundamental Si(001) substrates in the same conditions. For Si miscut substrate, a substantial enhancement in the density of the SiC NCs and a tendency of preferential alignment of them along the atomic step edges is observed. The SiC/Si interface is abrupt, without any steps and epitaxial growth with full relaxation of 3C-SiC occurs by domain matching epitaxy. The CO{sub 2} pressure and annealing time effect on NC growth is analyzed. The as-prepared SiC NCs can be engineered further for potential application in optoelectronic devices and/or as a seed for homoepitaxial SiC or heteroepitaxial GaN film growth. - Highlights: • Synthesis of 3C-SiC nanocrystals epitaxied on miscut-Si using a simple technique • Evidence of domain matching epitaxy at the SiC/Si interface • SiC growth proceeds along the (001) plane of host Si. • Substantial enhancement of the SiC nanocrystal density due to the miscut • Effect of the process parameters (CO{sub 2} pressure and annealing duration)

  19. Influence of a-Si:H deposition power on surface passivation property and thermal stability of a-Si:H/SiNx:H stacks

    Directory of Open Access Journals (Sweden)

    Hua Li

    2012-06-01

    Full Text Available The effectiveness of hydrogenated amorphous silicon (a-Si:H layers for passivating crystalline silicon surfaces has been well documented in the literature for well over a decade. One limitation of such layers however has arisen from their inability to withstand temperatures much above their deposition temperature without significant degradation. This limitation is of importance particularly with multicrystalline silicon materials where temperatures of at least 400°C are needed for effective hydrogenation of the crystallographic defects such as grain boundaries. To address this limitation, in this work the surface passivation quality and thermal stability of a stack passivating system, combining a layer of intrinsic a-Si:H and a capping layer of silicon nitride (SiNx:H, on p-type crystalline silicon wafers is studied and optimized. In particular the sensitivity of different microwave (MW power levels for underlying a-Si:H layer deposition are examined. Both effective minority carrier lifetime (ζeff measurement and Fourier transform infrared (FTIR spectrometry were employed to study the bonding configurations, passivating quality and thermal stability of the a-Si:H/SiNx:H stacks. It is established that the higher MW power could result in increased as-deposited ζeff and implied Voc (iVoc values, indicating likely improved surface passivation quality, but that this combination degrades more quickly when exposed to prolonged thermal treatments. The more dihydride-rich film composition corresponding to the higher MW power appears to be beneficial for bond restructuring by hydrogen interchanges when exposed to short term annealing, however it also appears more susceptible to providing channels for hydrogen out-effusion which is the likely cause of the poorer thermal stability for prolonged high temperature exposure compared with stacks with underlying a-Si:H deposited with lower MW power.

  20. Study of indentation induced cracks in MoSi2-reaction bonded SiC ...

    Indian Academy of Sciences (India)

    Mo melt into a preform of commercial SiC and petroleum coke powder. The infiltrated sample had a density > 92% of the theoretical density (TD) and microstructurally contained SiC, MoSi2, residual Si and unreacted C. The material was tested for indentation fracture toughness at room temperature with a Vicker's indenter ...

  1. The influence of strain on the diffusion of Si dimers on Si(001)

    NARCIS (Netherlands)

    Zoethout, E.; Zoethout, E.; Gurlu, O.; Gürlü, O.; Zandvliet, Henricus J.W.; Poelsema, Bene

    2000-01-01

    The influence of lattice mismatch-induced tensile strain on the diffusion of Si dimers on Si(001) has been studied. The rate of surface diffusion of a Si dimer along the substrate dimer rows is relatively insensitive to tensile strain, whereas the rate of diffusion for a Si dimer across the

  2. Computer aided cooling curve analysis for Al-5Si and Al-11Si alloys

    African Journals Online (AJOL)

    user

    1. Introduction. Aluminium-Silicon (Al-Si) alloys are considered as the most important cast alloys due to their excellent casting characteristics, good corrosion resistance, and good weldability. The fluidity of the Al-Si alloy increases up to eutectic composition (12.5% Si), further, presence of Si reduces hot cracking tendencies ...

  3. Microstructure and wear studies of laser clad Al-Si/SiC(p) composite coatings

    NARCIS (Netherlands)

    Anandkumar, R.; Almeida, A.; Colaco, R.; Vilar, R.; Ocelik, V.; De Hosson, J. Th. M.

    2007-01-01

    Coatings of a composite material consisting of an Al-Si matrix reinforced with SiC particles were produced by laser cladding on UNS A03560 cast Al-alloy substrates from mixtures of powders of Al-12 wt.% Si alloy and SiC. The influence of the processing parameters on the microstructure and abrasive

  4. Irradiation project of SiC/SiC fuel pin 'INSPIRE': Status and future plan

    International Nuclear Information System (INIS)

    Kohyama, Akira; Kishimoto, Hirotatsu

    2015-01-01

    After the March 11 Disaster in East-Japan, Research and Development towards Ensuring Nuclear Safety Enhancement for LWR becomes a top priority R and D in nuclear energy policy of Japan. The role of high temperature non-metallic materials, such as SiC/SiC, is becoming important for the advanced nuclear reactor systems. SiC fibre reinforced SiC composite has been recognised to be the most attractive option for the future, now, METI fund based project, INSPIRE, has been launched as 5-year termed project at OASIS in Muroran Institute of Technology aiming at early realisation of this system. INSPIRE is the irradiation project of SiC/SiC fuel pins aiming to accumulate material, thermal, irradiation effect data of NITE-SiC/SiC in BWR environment. Nuclear fuel inserted SiC/SiC fuel pins are planned to be installed in the Halden reactor. The project includes preparing the NITE-SiC/SiC tubes, joining of end caps, preparation of rigs to control the irradiation environment to BWR condition and the instruments to measure the condition of rigs and pins in operation. Also, basic neutron irradiation data will be accumulated by SiC/SiC coupon samples currently under irradiation in BR2. The output from this project may present the potentiality of NITE-SiC/SiC fuel cladding with the first stage fuel-cladding interaction. (authors)

  5. SiO adsorption on a p(2 × 2) reconstructed Si(1 0 0) surface

    NARCIS (Netherlands)

    Violanda, M.|info:eu-repo/dai/nl/304840262; Rudolph, H.|info:eu-repo/dai/nl/304830496

    2009-01-01

    We have investigated the adsorption mechanism of SiO molecule incident on a clean Si(1 0 0) p(2 × 2) reconstructed surface using density functional theory based methods. Stable adsorption geometries of SiO on Si surface, as well as their corresponding activation and adsorption energies are

  6. A new material platform of Si photonics for implementing architecture of dense wavelength division multiplexing on Si bulk wafer.

    Science.gov (United States)

    Zhang, Ziyi; Yako, Motoki; Ju, Kan; Kawai, Naoyuki; Chaisakul, Papichaya; Tsuchizawa, Tai; Hikita, Makoto; Yamada, Koji; Ishikawa, Yasuhiko; Wada, Kazumi

    2017-01-01

    A new materials group to implement dense wavelength division multiplexing (DWDM) in Si photonics is proposed. A large thermo-optic (TO) coefficient of Si malfunctions multiplexer/demultiplexer (MUX/DEMUX) on a chip under thermal fluctuation, and thus DWDM implementation, has been one of the most challenging targets in Si photonics. The present study specifies an optical materials group for DWDM by a systematic survey of their TO coefficients and refractive indices. The group is classified as mid-index contrast optics (MiDex) materials, and non-stoichiometric silicon nitride (SiN x ) is chosen to demonstrate its significant thermal stability. The TO coefficient of non-stoichiometric SiN x is precisely measured in the temperature range 24-76 °C using the SiN x rings prepared by two methods: chemical vapor deposition (CVD) and physical vapor deposition (PVD). The CVD-SiN x ring reveals nearly the same TO coefficient reported for stoichiometric CVD-Si 3 N 4 , while the value for the PVD-SiN x ring is slightly higher. Both SiN x rings lock their resonance frequencies within 100 GHz in this temperature range. Since CVD-SiN x needs a high temperature annealing to reduce N-H bond absorption, it is concluded that PVD-SiN x is suited as a MiDex material introduced in the CMOS back-end-of-line. Further stabilization is required, considering the crosstalk between two channels; a 'silicone' polymer is employed to compensate for the temperature fluctuation using its negative TO coefficient, called athermalization. This demonstrates that the resonance of these SiN x rings is locked within 50 GHz at the same temperature range in the wavelength range 1460-1620 nm (the so-called S, C, and L bands in optical fiber communication networks). A further survey on the MiDex materials strongly suggests that Al 2 O 3 , Ga 2 O 3 Ta 2 O 5 , HfO 2 and their alloys should provide even more stable platforms for DWDM implementation in MiDex photonics. It is discussed that the MiDex photonics

  7. Formation of AlFeSi phase in AlSi12 alloy with Ce addition

    Directory of Open Access Journals (Sweden)

    S. Kores

    2012-04-01

    Full Text Available The influence of cerium addition on the solidification sequence and microstructure constituents of the Al-Si alloys with 12,6 mass % Si was examined. The solidification was analyzed by a simple thermal analysis. The microstructures were examined with conventional light and scanning electron microscopy. Ternary AlSiCe phase was formed in the Al-Si alloys with added cerium during the solidification process. AlSiCe and β-AlFeSi phases solidified together in the region that solidified the last. Cerium addition influenced on the morphology of the α-AlFeSi phase solidification.

  8. Fabrication of SiGe/Ge core-shell nanowires by oxidation of SiGe

    OpenAIRE

    Kløw, Frode

    2011-01-01

    As Si technology is reaching its limits in solar cell and transistor applications, ways to improve these devices are being investigated. This study looks at the fabrication process of SiGe/Ge core-shell nanowires (NWs). Larger SiGe column structures can be oxidized to reduce their size and create a SiGe/Ge core-shell structure with a layer of SiO2 on the outside. Initially, SiGe dry oxidation was investigated in epitaxially grown SiGe films with 15% and 20% Ge, focusing on the Ge pileup r...

  9. Lattice dislocation in Si nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Omar, M.S., E-mail: dr_m_s_omar@yahoo.co [Department of Physics, College of Science, University of Salahaddin, Arbil, Iraqi Kurdistan (Iraq); Taha, H.T. [Department of Physics, College of Science, University of Salahaddin, Arbil, Iraqi Kurdistan (Iraq)

    2009-12-15

    Modified formulas were used to calculate lattice thermal expansion, specific heat and Bulk modulus for Si nanowires with diameters of 115, 56, 37 and 22 nm. From these values and Gruneisen parameter taken from reference, mean lattice volumes were found to be as 20.03 A{sup 3} for the bulk and 23.63, 29.91, 34.69 and 40.46 A{sup 3} for Si nanowire diameters mentioned above, respectively. Their mean bonding length was calculated to be as 0.235 nm for the bulk and 0.248, 0.269, 0.282 and 0.297 nm for the nanowires diameter mentioned above, respectively. By dividing the nanowires diameter on the mean bonding length, number of layers per each nanowire size was found to be as 230, 104, 65 and 37 for the diameters mentioned above, respectively. Lattice dislocations in 22 nm diameter wire were found to be from 0.00324 nm for the 1st central lattice to 0.2579 nm for the last surface lattice. Such dislocation was smaller for larger wire diameters. Dislocation concentration found to change in Si nanowires according to the proportionalities of surface thickness to nanowire radius ratios.

  10. Ion beam processes in Si

    International Nuclear Information System (INIS)

    Holland, O.W.; Narayan, J.; Fathy, D.

    1984-07-01

    Observation of the effects of implants of energetic ions at high dose rates into Si have produced some exciting and interesting results. The mechanism whereby displacement damage produced by ions self-anneals during high dose rate implantation is discussed. It is shown that ion beam annealing (IBA) offers in certain situations unique possibilities for damage annealing. Annealing results of the near surface in Si with a buried oxide layer, formed by high dose implantation, are presented in order to illustrate the advantages offered by IBA. It is also shown that ion irradiation can stimulate the epitaxial recrystallization of amorphous overlayers in Si. The nonequilibrium alloying which results from such epitaxial processes is discussed as well as mechanisms which limit the solid solubility during irradiation. Finally, a dose rate dependency for the production of stable damage by ion irradiation at a constant fluence has been observed. For low fluence implants, the amount of damage is substantially greater in the case of high flux rather than low flux implantation

  11. Si quantum dot structures and their applications

    Science.gov (United States)

    Shcherbyna, L.; Torchynska, T.

    2013-06-01

    This paper presents briefly the history of emission study in Si quantum dots (QDs) in the last two decades. Stable light emission of Si QDs and NCs was observed in the spectral ranges: blue, green, orange, red and infrared. These PL bands were attributed to the exciton recombination in Si QDs, to the carrier recombination through defects inside of Si NCs or via oxide related defects at the Si/SiOx interface. The analysis of recombination transitions and the different ways of the emission stimulation in Si QD structures, related to the element variation for the passivation of surface dangling bonds, as well as the plasmon induced emission and rare earth impurity activation, have been presented. The different applications of Si QD structures in quantum electronics, such as: Si QD light emitting diodes, Si QD single union and tandem solar cells, Si QD memory structures, Si QD based one electron devices and double QD structures for spintronics, have been discussed as well. Note the significant worldwide interest directed toward the silicon-based light emission for integrated optoelectronics is related to the complementary metal-oxide semiconductor compatibility and the possibility to be monolithically integrated with very large scale integrated (VLSI) circuits. The different features of poly-, micro- and nanocrystalline silicon for solar cells, that is a mixture of both amorphous and crystalline phases, such as the silicon NCs or QDs embedded in a α-Si:H matrix, as well as the thin film 2-cell or 3-cell tandem solar cells based on Si QD structures have been discussed as well. Silicon NC based structures for non-volatile memory purposes, the recent studies of Si QD base single electron devices and the single electron occupation of QDs as an important component to the measurement and manipulation of spins in quantum information processing have been analyzed as well.

  12. Abrupt GaP/Si hetero-interface using bistepped Si buffer

    International Nuclear Information System (INIS)

    Ping Wang, Y.; Kuyyalil, J.; Nguyen Thanh, T.; Almosni, S.; Bernard, R.; Tremblay, R.; Da Silva, M.; Létoublon, A.; Rohel, T.; Tavernier, K.; Le Corre, A.; Cornet, C.; Durand, O.; Stodolna, J.; Ponchet, A.; Bahri, M.; Largeau, L.; Patriarche, G.; Magen, C.

    2015-01-01

    We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth

  13. Fabrication of Environmentally Resistant NITE-SiC/SiC Composites

    Energy Technology Data Exchange (ETDEWEB)

    Park, J S; Jung, H C [Muroran Establishment, IEST Co., Ltd., 27-1 Mizumoto-cho, Muroran 050-8585 (Japan); Ooi, Y; Kishimoto, K; Kohyama, A, E-mail: jspark@iest.jp [OASIS, Muroran Institute of Technology, 27-1 Mizumoto-cho, Muroran 050-8585 (Japan)

    2011-10-29

    NITE-SiC, SiC/SiC qualification of environmental resistance in various conditions is on-going toward early utilization in advanced energy and aero-space systems. Multi-layered SiC/SiC composites for preventing environmental attacks to pyrocarbon interphase was provided. Thermal exposure test in air and liquid metal(Pb and Li-Pb) compatibility test were carried out. It was confirmed the significant loss of PyC interphase in SiC/SiC composites. In case of Li-Pb-layered SiC/SiC composites, an attack of air and liquid metal has been sucessfuly supressed by surface SiC layer

  14. Abrupt GaP/Si hetero-interface using bistepped Si buffer

    Energy Technology Data Exchange (ETDEWEB)

    Ping Wang, Y., E-mail: yanping.wang@insa-rennes.fr; Kuyyalil, J.; Nguyen Thanh, T.; Almosni, S.; Bernard, R.; Tremblay, R.; Da Silva, M.; Létoublon, A.; Rohel, T.; Tavernier, K.; Le Corre, A.; Cornet, C.; Durand, O. [UMR FOTON, CNRS, INSA Rennes, Rennes F-35708 (France); Stodolna, J.; Ponchet, A. [CEMES-CNRS, Université de Toulouse, 29 rue Jeanne Marvig, BP 94347, 31055 Toulouse Cedex 04 (France); Bahri, M.; Largeau, L.; Patriarche, G. [Laboratoire de Photonique et Nanostructures, CNRS UPR 20, Route de Nozay, Marcoussis 91460 (France); Magen, C. [LMA, INA-ARAID, and Departamento de Física de la Materia Condensada, Universidad de Zaragoza, 50018 Zaragoza (Spain)

    2015-11-09

    We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth.

  15. One-step deposition of ultrafiltration SiC membranes on macroporous SiC supports

    DEFF Research Database (Denmark)

    König, Katja; Boffa, Vittorio; Buchbjerg, Bjarke

    2014-01-01

    We fabricated nearly defect-free SiC membranes for potential ultrafiltration applications by conducting pyrolysis of allylhydrido polycarbosilane in the presence of submicron α-SiC particles. The SiC membranes were developed on commercial macroporous SiC supports by a low-temperature-process in w......We fabricated nearly defect-free SiC membranes for potential ultrafiltration applications by conducting pyrolysis of allylhydrido polycarbosilane in the presence of submicron α-SiC particles. The SiC membranes were developed on commercial macroporous SiC supports by a low......-temperature-process in which allylhydrido polycarbosilane acted to bond together crystalline α-SiC particles to form a porous layer. The suspensions of α-SiC powder and allylhydrido polycarbosilane in hexane or hexane/tetradecane were used for membrane fabrication by dip-coating. By using optimized hexane suspension with 5% w...

  16. Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layer

    Science.gov (United States)

    Lee, Kwang Hong; Bao, Shuyu; Wang, Yue; Fitzgerald, Eugene A.; Seng Tan, Chuan

    2018-01-01

    The material properties and bonding behavior of silane-based silicon oxide layers deposited by plasma-enhanced chemical vapor deposition were investigated. Fourier transform infrared spectroscopy was employed to determine the chemical composition of the silicon oxide films. The incorporation of hydroxyl (-OH) groups and moisture absorption demonstrates a strong correlation with the storage duration for both as-deposited and annealed silicon oxide films. It is observed that moisture absorption is prevalent in the silane-based silicon oxide film due to its porous nature. The incorporation of -OH groups and moisture absorption in the silicon oxide films increase with the storage time (even in clean-room environments) for both as-deposited and annealed silicon oxide films. Due to silanol condensation and silicon oxidation reactions that take place at the bonding interface and in the bulk silicon, hydrogen (a byproduct of these reactions) is released and diffused towards the bonding interface. The trapped hydrogen forms voids over time. Additionally, the absorbed moisture could evaporate during the post-bond annealing of the bonded wafer pair. As a consequence, defects, such as voids, form at the bonding interface. To address the problem, a thin silicon nitride capping film was deposited on the silicon oxide layer before bonding to serve as a diffusion barrier to prevent moisture absorption and incorporation of -OH groups from the ambient. This process results in defect-free bonded wafers.

  17. Influences of residual oxygen impurities, cubic indium oxide grains and indium oxy-nitride alloy grains in hexagonal InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Yodo, T.; Nakamura, T.; Kouyama, T. [Department of Electronics, Information and Communication Engineering, Osaka Institute of Technology, 5-16-1 Asahi-ku, Ohmiya, Osaka 535-8585 (Japan); Harada, Y. [Applied Physics, Osaka Institute of Technology, 5-16-1, Asahi-ku, Ohmiya, Osaka 535-8585 (Japan)

    2005-05-01

    We investigated the influences of residual oxygen (O) impurities, cubic indium oxide ({beta}-In{sub 2}O{sub 3}) grains and indium oxy-nitride (InON) alloy grains in 200 nm-thick hexagonal ({alpha})-InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy. Although {beta}-In{sub 2}O{sub 3} grains with wide band-gap energy were formed in In film by N{sub 2} annealing, they were not easily formed in N{sub 2}-annealed InN films. Even if they were not detected in N{sub 2}-annealed InN films, the as-grown films still contained residual O impurities with concentrations of less than 0.5% ([O]{<=}0.5%). Although [O]{proportional_to}1% could be estimated by investigating In{sub 2}O{sub 3} grains formed in N{sub 2}-annealed InN films, [O]{<=}0.5% could not be measured by it. However, we found that they can be qualitatively measured by investigating In{sub 2}O{sub 3} grains formed by H{sub 2} annealing with higher reactivity with InN and O{sub 2}, using X-ray diffraction and PL spectroscopy. In this paper, we discuss the formation mechanism of InON alloy grains in InN films. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Innovative SiC/SiC composite for nuclear applications

    International Nuclear Information System (INIS)

    Chaffron, L.; Sauder, C.; Lorrette, C.; Briottet, L.; Michaux, A.; Gelebart, L.; Coupe, A.; Zabiego, M.; Le Flem, M.; Seran, J. L.

    2013-01-01

    Among various refractory materials, SiC/SiC ceramic matrix composites (CMC) are of prime interest for fusion and advanced fission energy applications, due to their excellent irradiation tolerance and safety features (low activation, low tritium permeability,K). Initially developed as fuel cladding materials for the Fourth generation Gas cooled Fast Reactor (GFR), this material has been recently envisaged by CEA for different core structures of Sodium Fast Reactor (SFR) which combines fast neutrons and high temperature (500 deg.C). Regarding fuel cladding generic application, in the case of GFR, the first challenge facing this project is to demonstrate the feasibility of a fuel operating under very harsh conditions that are (i) temperatures of structures up to 700 deg.C in nominal and over 1600 deg.C in accidental conditions, (ii) irradiation damage higher than 60 dpa SiC , (iii) neutronic transparency, which disqualifies conventional refractory metals as structural core materials, (iv) mechanical behavior that guarantees in most circumstances the integrity of the first barrier (e.g.: ε> 0.5%), which excludes monolithic ceramics and therefore encourages the development of new types of fibrous composites SiC/SiC adapted to the fast reactor conditions. No existing material being capable to match all these requirements, CEA has launched an ambitious program of development of an advanced material satisfying the specifications [1]. This project, that implies many laboratories, inside and outside CEA, has permitted to obtain a very high quality compound that meets most of the challenging requirements. We present hereinafter few recent results obtained regarding the development of the composite. One of the most relevant challenges was to make a gas-tight composite up to the ultimate rupture. Indeed, multi-cracking of the matrix is the counterpart of the damageable behavior observed in these amazing compounds. Among different solutions envisaged, an innovative one has been

  19. Refractory and Hard Materials in the Ti-Si-B-C-N System - Phase Equilibria, Phase Reactions and Thermal Stabilities

    National Research Council Canada - National Science Library

    Seifert, Hans Juergen

    2004-01-01

    A thermodynamic dataset was developed for the quinary Ti-Si-B-C-N system. The phase modeling includes all carbides, nitrides, carbonitrides, borides and silicides which can be used as high temperature structural materials...

  20. Preparation of biomorphic SiC ceramics

    Directory of Open Access Journals (Sweden)

    Egelja A.

    2008-01-01

    Full Text Available This paper deals with a new method for producing non-oxide ceramic using wood as a template. SiC with a woodlike microstructure has been prepared by carbothermal reduction reactions of Tilia wood/TEOS composite at 1873K. The porous carbon preform was infiltrated with TEOS (Si(OC2H54, as a source of silica, without pressure at 298K. The morphology of resulting porous SiC ceramics, as well as the conversion mechanism of wood to SiC ceramics, have been investigated by scanning electron microscopy (SEM/EDS and X-ray diffraction analysis (XRD. Obtained SiC ceramics consists of β-SiC with traces of α-SiC.

  1. Hierarchical Cd4SiS6/SiO2 Heterostructure Nanowire Arrays.

    Science.gov (United States)

    Liu, Jian; Wang, Chunrui; Xie, Qingqing; Cai, Junsheng; Zhang, Jing

    2009-10-29

    Novel hierarchical Cd4SiS6/SiO2 based heterostructure nanowire arrays were fabricated on silicon substrates by a one-step thermal evaporation of CdS powder. The as-grown products were characterized using scanning electron microscopy, X-ray diffraction, and transmission electron microscopy. Studies reveal that a typical hierarchical Cd4SiS6/SiO2 heterostructure nanowire is composed of a single crystalline Cd4SiS6 nanowire core sheathed with amorphous SiO2 sheath. Furthermore, secondary nanostructures of SiO2 nanowires are highly dense grown on the primary Cd4SiS6 core-SiO2 sheath nanowires and formed hierarchical Cd4SiS6/SiO2 based heterostructure nanowire arrays which stand vertically on silicon substrates. The possible growth mechanism of hierarchical Cd4SiS6/SiO2 heterostructure nanowire arrays is proposed. The optical properties of hierarchical Cd4SiS6/SiO2 heterostructure nanowire arrays are investigated using Raman and Photoluminescence spectroscopy.

  2. Hierarchical Cd4SiS6/SiO2 Heterostructure Nanowire Arrays

    Directory of Open Access Journals (Sweden)

    Liu Jian

    2009-01-01

    Full Text Available Abstract Novel hierarchical Cd4SiS6/SiO2 based heterostructure nanowire arrays were fabricated on silicon substrates by a one-step thermal evaporation of CdS powder. The as-grown products were characterized using scanning electron microscopy, X-ray diffraction, and transmission electron microscopy. Studies reveal that a typical hierarchical Cd4SiS6/SiO2 heterostructure nanowire is composed of a single crystalline Cd4SiS6 nanowire core sheathed with amorphous SiO2 sheath. Furthermore, secondary nanostructures of SiO2 nanowires are highly dense grown on the primary Cd4SiS6 core-SiO2 sheath nanowires and formed hierarchical Cd4SiS6/SiO2 based heterostructure nanowire arrays which stand vertically on silicon substrates. The possible growth mechanism of hierarchical Cd4SiS6/SiO2 heterostructure nanowire arrays is proposed. The optical properties of hierarchical Cd4SiS6/SiO2 heterostructure nanowire arrays are investigated using Raman and Photoluminescence spectroscopy.

  3. An Isotope Study of Hydrogenation of poly-Si/SiOx Passivated Contacts for Si Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Schnabel, Manuel; Nemeth, William; van de Loo, Bas, W.H.; Macco, Bart; Kessels, Wilhelmus, M.M.; Stradins, Paul; Young, David, L.

    2017-06-26

    For many years, the record Si solar cell efficiency stood at 25.0%. Only recently have several companies and institutes managed to produce more efficient cells, using passivated contacts of made doped poly-Si or a-Si:H and a passivating intrinsic interlayer in all cases. Common to these designs is the need to passivate the layer stack with hydrogen. In this contribution, we perform a systematic study of passivated contact passivation by hydrogen, using poly-Si/SiOx passivated contacts on n-Cz-Si, and ALD Al2O3 followed by a forming gas anneal (FGA) as the hydrogen source. We study p-type and n-type passivated contacts with implied Voc exceeding 690 and 720 mV, respectively, and perform either the ALD step or the FGA with deuterium instead of hydrogen in order to separate the two processes via SIMS. By examining the deuterium concentration at the SiOx in both types of samples, we demonstrate that the FGA supplies negligible hydrogen species to the SiOx, regardless of whether the FGA is hydrogenated or deuterated. Instead, it supplies the thermal energy needed for hydrogen species in the Al2O3 to diffuse there. Furthermore, the concentration of hydrogen species at the SiOx can saturate while implied Voc continues to increase, showing that the energy from the FGA is also required for hydrogen species already at the SiOx to find recombination-active defects to passivate.

  4. Coherent Phonons Spectroscopy in Si/SiGe superlattices

    Science.gov (United States)

    Michel, Helene; Ezzahri, Younes; Shakouri, Ali; Pernot, Gilles; Rampnoux, Jean-Michel; Dilhaire, Stefan

    2010-03-01

    Ultrafast pump-probe experiments have been extensively used for coherent zone-folded acoustic phonon spectroscopy in semiconductor superlattices (SL). Most of the spectroscopy studies have been realized via impulsive stimulated Raman scattering (ISRS). More recently some studies, focused on Si/SixGe1-x SL, have combined the spectroscopy via ISRS with the spectroscopy of phonons Bragg reflected via picosecond acoustic experiment. In the latter case, sample needs to be covered by a metallic film which serves as a transducer to convert the optical energy into an impulse heating and thermal expansion. This launches coherent acoustic phonons into the SL structure. Here we present a systematic study of coherent phonons in different Si/SixGe1-x SL structures with two different superlattice periods and transducer thicknesses. The measured acoustic spectrums show that the thickness of the transducer should be chosen as function as the SL period to be able to generate and detect both phonons Bragg reflected and excited by ISRS.

  5. Impact resistance of uncoated SiC/SiC composites

    International Nuclear Information System (INIS)

    Bhatt, Ramakrishna T.; Choi, Sung R.; Cosgriff, Laura M.; Fox, Dennis S.; Lee, Kang N.

    2008-01-01

    Two-dimensional woven SiC/SiC composites fabricated by melt infiltration method were impact tested at room temperature and at 1316 deg. C in air using 1.59-mm diameter steel-ball projectiles at velocities ranging from 115 to 400 m/s. The extent of substrate damage with increasing projectile velocity was imaged and analyzed using optical and scanning electron microscopy, and non-destructive evaluation (NDE) methods such as pulsed thermography, and computed tomography. The impacted specimens were tensile tested at room temperature to determine their residual mechanical properties. Results indicate that at 115 m/s projectile velocity, the composite showed no noticeable surface or internal damage and retained its as-fabricated mechanical properties. As the projectile velocity increased above this value, the internal damage increased and mechanical properties degraded. At velocities >300 m/s, the projectile penetrated through the composite, but the composite retained ∼50% of the ultimate tensile strength of the as-fabricated composite and exhibited non-brittle failure. Predominant internal damages are delamination of fiber plies, fiber fracture and matrix shearing

  6. High-performance a -Si/c-Si heterojunction photoelectrodes for photoelectrochemical oxygen and hydrogen evolution

    KAUST Repository

    Wang, Hsin Ping

    2015-05-13

    Amorphous Si (a-Si)/crystalline Si (c-Si) heterojunction (SiHJ) can serve as highly efficient and robust photoelectrodes for solar fuel generation. Low carrier recombination in the photoelectrodes leads to high photocurrents and photovoltages. The SiHJ was designed and fabricated into both photoanode and photocathode with high oxygen and hydrogen evolution efficiency, respectively, by simply coating of a thin layer of catalytic materials. The SiHJ photoanode with sol-gel NiOx as the catalyst shows a current density of 21.48 mA/cm2 at the equilibrium water oxidation potential. The SiHJ photocathode with 2 nm sputter-coated Pt catalyst displays excellent hydrogen evolution performance with an onset potential of 0.640 V and a solar to hydrogen conversion efficiency of 13.26%, which is the highest ever reported for Si-based photocathodes. © 2015 American Chemical Society.

  7. Propagation of misfit dislocations from buffer/Si interface into Si

    Science.gov (United States)

    Liliental-Weber, Zuzanna [El Sobrante, CA; Maltez, Rogerio Luis [Porto Alegre, BR; Morkoc, Hadis [Richmond, VA; Xie, Jinqiao [Raleigh, VA

    2011-08-30

    Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

  8. Crystal growth and characterization of fluorescent SiC

    DEFF Research Database (Denmark)

    Wellmann, P.; Kaiser, M.; Hupfer, T.

    Silicon carbide (SiC) is widely used as substrate for nitride based light emitting diodes (LEDs). For today’s white LEDs mainly a sandwich structure of a blue or ultra violet LED and a yellowish phosphorus is used. In the frame of European project we study a concept to implement the functionality......-SiC co-doped with nitrogen and boron has been achieved [1][2]. The source is the rate determining step, and is expected to be determining the fluorescent properties by introducing dopants to the layer from the source. The optimization process of the polycrystalline, co-doped SiC:B,N source material...... and its impact on the FSPG epitaxial process, in particular the influence on the brightness of the is presented. In particular, the doping properties of the poly-SiC source material influence on the brightness of the fluorescent 6H-SiC. In addition we have investigated how the grain orientation...

  9. Si@SiOx/Graphene Nanosheets Composite: Ball Milling Synthesis and Enhanced Lithium Storage Performance

    Directory of Open Access Journals (Sweden)

    Xiaoyong Tie

    2018-01-01

    Full Text Available Si@SiOx/grapheme nanosheet (Si@SiOx/GNS nanocomposites as high-performance anode materials for lithium-ion batteries are prepared by mechanically blending the mixture of expanded graphite (EG with Si nanoparticles, and characterized by Raman spectrum, X-ray diffraction (XRD, field emission scanning electron microscopy, and transmission electron microscopy. During ball milling process, the size of Si nanoparticles will decrease, and the layer of EG can be peeled off to thin multilayers. Electrochemical tests reveal that the Si@SiOx/GNS nanocomposites show enhanced cycling stability, high reversible capacity, and rate capability, even with high content of active materials of 80% and without electrolyte additives. The retained revisable capacity is 1,055 mAh g−1 after 50 cycles at 0.2 A g−1 and about 63.6% of the initial value. The great electrochemical performance of Si@SiOx/GNS nanocomposites can be ascribed to GNS prepared through heat-treat and ball-milling methods, the decrease in the size of Si nanoparticles and SiOx layer on Si surface, which enhance the interactions between Si and GNS.

  10. Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2015-11-01

    Full Text Available In this paper, we demonstrated the shallow NiSiGe Schottky junction on the SiGe P-channel by using low-temperature microwave annealing. The NiSiGe/n-Si Schottky junction was formed for the Si-capped/SiGe multi-layer structure on an n-Si substrate (Si/Si0.57Ge0.43/Si through microwave annealing (MWA ranging from 200 to 470 °C for 150 s in N2 ambient. MWA has the advantage of being diffusion-less during activation, having a low-temperature process, have a lower junction leakage current, and having low sheet resistance (Rs and contact resistivity. In our study, a 20 nm NiSiGe Schottky junction was formed by TEM and XRD analysis at MWA 390 °C. The NiSiGe/n-Si Schottky junction exhibits the highest forward/reverse current (ION/IOFF ratio of ~3 × 105. The low temperature MWA is a very promising thermal process technology for NiSiGe Schottky junction manufacturing.

  11. Determination of optimum Si excess concentration in Er-doped Si-rich SiO2 for optical amplification at 1.54 μm

    International Nuclear Information System (INIS)

    Savchyn, Oleksandr; Coffey, Kevin R.; Kik, Pieter G.

    2010-01-01

    The presence of indirect Er 3+ excitation in Si-rich SiO 2 is demonstrated for Si-excess concentrations in the range of 2.5-37 at. %. The Si excess concentration providing the highest density of sensitized Er 3+ ions is demonstrated to be relatively insensitive to the presence of Si nanocrystals and is found to be ∼14.5 at. % for samples without Si nanocrystals (annealed at 600 deg. C) and ∼11.5 at. % for samples with Si nanocrystals (annealed at 1100 deg. C). The observed optimum is attributed to an increase in the density of Si-related sensitizers as the Si concentration is increased, with subsequent deactivation and removal of these sensitizers at high Si concentrations. The optimized Si excess concentration is predicted to generate maximum Er-related gain at 1.54 μm in devices based on Er-doped Si-rich SiO 2 .

  12. Influence of CO annealing in metal-oxide-semiconductor capacitors with SiO2 films thermally grown on Si and on SiC

    Science.gov (United States)

    Pitthan, E.; dos Reis, R.; Corrêa, S. A.; Schmeisser, D.; Boudinov, H. I.; Stedile, F. C.

    2016-01-01

    Understanding the influence of SiC reaction with CO, a by-product of SiC thermal oxidation, is a key point to elucidate the origin of electrical defects in SiC metal-oxide-semiconductor (MOS) devices. In this work, the effects on electrical, structural, and chemical properties of SiO2/Si and SiO2/SiC structures submitted to CO annealing were investigated. It was observed that long annealing times resulted in the incorporation of carbon from CO in the Si substrate, followed by deterioration of the SiO2/Si interface, and its crystallization as SiC. Besides, this incorporated carbon remained in the Si surface (previous SiO2/Si region) after removal of the silicon dioxide film by HF etching. In the SiC case, an even more defective surface region was observed due to the CO interaction. All MOS capacitors formed using both semiconductor materials presented higher leakage current and generation of positive effective charge after CO annealings. Such results suggest that the negative fixed charge, typically observed in SiO2/SiC structures, is not originated from the interaction of the CO by-product, formed during SiC oxidation, with the SiO2/SiC interfacial region.

  13. Hierarchical Cd4SiS6/SiO2 Heterostructure Nanowire Arrays

    OpenAIRE

    Liu, Jian; Wang, Chunrui; Xie, Qingqing; Cai, Junsheng; Zhang, Jing

    2009-01-01

    Abstract Novel hierarchical Cd4SiS6/SiO2 based heterostructure nanowire arrays were fabricated on silicon substrates by a one-step thermal evaporation of CdS powder. The as-grown products were characterized using scanning electron microscopy, X-ray diffraction, and transmission electron microscopy. Studies reveal that a typical hierarchical Cd4SiS6/SiO2 heterostructure nanowire is composed of a single crystalline Cd4SiS6 nanowire core sheathed with amorphous SiO2 sheath. Furthermore, secondar...

  14. Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111)

    OpenAIRE

    Abe Shunsuke; Handa Hiroyuki; Takahashi Ryota; Imaizumi Kei; Fukidome Hirokazu; Suemitsu Maki

    2010-01-01

    Abstract Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111) thin films on Si(111) has been studied. The change in the surface composition during graphene epitaxy is monitored by in situ temperature-programmed desorption spectroscopy using deuterium as a probe (D2-TPD) and complementarily by ex situ Raman and C1s core-level spectroscopies. The surface of the 3C-SiC(111)/Si(111) is Si-terminated before the graphitization, and ...

  15. Interfacial microstructure of NiSi x/HfO2/SiO x/Si gate stacks

    International Nuclear Information System (INIS)

    Gribelyuk, M.A.; Cabral, C.; Gusev, E.P.; Narayanan, V.

    2007-01-01

    Integration of NiSi x based fully silicided metal gates with HfO 2 high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi x film. Ni content varies near the NiSi/HfO x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi x /HfO 2 interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi x /HfO x was found higher than that of poly-Si/HfO 2 , likely due to compositional non-uniformity of NiSi x . No intermixing between Hf, Ni and Si beyond interfacial roughness was observed

  16. Effect of PECVD SiNx/SiOy Nx –Si interface property on surface passivation of silicon wafer

    International Nuclear Information System (INIS)

    Jia Xiao-Jie; Zhou Chun-Lan; Zhou Su; Wang Wen-Jing; Zhu Jun-Jie

    2016-01-01

    It is studied in this paper that the electrical characteristics of the interface between SiO y N x /SiN x stack and silicon wafer affect silicon surface passivation. The effects of precursor flow ratio and deposition temperature of the SiO y N x layer on interface parameters, such as interface state density Di t and fixed charge Q f , and the surface passivation quality of silicon are observed. Capacitance–voltage measurements reveal that inserting a thin SiO y N x layer between the SiN x and the silicon wafer can suppress Q f in the film and D it at the interface. The positive Q f and D it and a high surface recombination velocity in stacks are observed to increase with the introduced oxygen and minimal hydrogen in the SiO y N x film increasing. Prepared by deposition at a low temperature and a low ratio of N 2 O/SiH 4 flow rate, the SiO y N x /SiN x stacks result in a low effective surface recombination velocity (S eff ) of 6 cm/s on a p-type 1 Ω·cm–5 Ω·cm FZ silicon wafer. The positive relationship between S eff and D it suggests that the saturation of the interface defect is the main passivation mechanism although the field-effect passivation provided by the fixed charges also make a contribution to it. (paper)

  17. An optically controlled SiC lateral power transistor based on SiC/SiCGe super junction structure

    International Nuclear Information System (INIS)

    Pu Hongbin; Cao Lin; Ren Jie; Chen Zhiming; Nan Yagong

    2010-01-01

    An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 μm and 0.7 μm are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively. (semiconductor devices)

  18. An optically controlled SiC lateral power transistor based on SiC/SiCGe super junction structure

    Energy Technology Data Exchange (ETDEWEB)

    Pu Hongbin; Cao Lin; Ren Jie; Chen Zhiming; Nan Yagong, E-mail: puhongbin@xaut.edu.c [Xi' an University of Technology, Xi' an 710048 (China)

    2010-04-15

    An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 {mu}m and 0.7 {mu}m are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively. (semiconductor devices)

  19. Dependence of bridging oxygen 17O quadrupolar coupling parameters on Si-O distance and Si-O-Si angle

    International Nuclear Information System (INIS)

    Clark, Ted M; Grandinetti, Philip J

    2003-01-01

    Ab initio quantum chemistry calculations and comparisons with experimental 17 O solid-state nuclear magnetic resonance (NMR) investigations were used to determine the dependence of the 17 O quadrupolar coupling constant and asymmetry parameter on the first-coordination-sphere structure around bridging oxygen. The quadrupolar asymmetry parameter was found to be dependent on the Si-O-Si angle, in agreement with previous studies, and independent of the Si-O distance. In contrast, the quadrupolar coupling constant was found to have a strong dependence on Si-O distance as well as Si-O-Si angle. Analytical expressions describing these dependences were proposed and used to develop an approach for relating measured 17 O quadrupolar coupling constant and asymmetry parameter values for bridging oxygen to their Si-O-Si angle and average Si-O distance. Examples of this approach were given using 17 O NMR results from the crystalline silica polymorphs, coesite, α-quartz, cristobalite, and ferrierite

  20. Effect of thermal cycling of SiC{sub f}/SiC composites on their mechanical properties

    Energy Technology Data Exchange (ETDEWEB)

    Udayakumar, A., E-mail: audayk@yahoo.com [Materials Science Division, Council of Scientific and Industrial Research – National Aerospace Laboratories, Bangalore-560 017 (India); Stalin, M.; Abhayalakshmi, M.B.; Hariharan, Ramya [Materials Science Division, Council of Scientific and Industrial Research – National Aerospace Laboratories, Bangalore-560 017 (India); Balasubramanian, M., E-mail: mbala@iitm.ac.in [Department of Metallurgical and Materials Engineering, Indian Institute of Technology Madras, Chennai-600 036 (India)

    2013-11-15

    SiC{sub f}/SiC composites are class of high temperature structural materials being developed for use in nuclear fusion and fission reactor systems because of their superior high temperature mechanical properties, low radiation damage and low induced radioactivity. Two types of 2D SiC{sub f}/SiC composites were made through isothermal and isobaric chemical vapor infiltration process using eight harness satin-woven ceramic-grades Nicalon™ fibers with boron nitride (BN) interface, namely: one with lower interface thickness and a second type with higher interface thickness. The BN interface was applied to the fiber prior to SiC matrix addition to modify the interfacial bond strength leading to better toughness and improved oxidation resistance. The density achieved was around 2.6 g/cc. The composite specimens were subjected to thermal cycling treatment using an in-house furnace. The mechanical properties such as tensile strength, fracture toughness and interfacial bond strength were also studied for all the composites before and after thermal cycling. It is seen from the results that both composites withstood thermal shocks and thermal cycling treatment. It was also concluded from the present work that good balance between load transfer and crack arresting was established.

  1. Synthesis of biomorphaus SiC-ceramics

    Directory of Open Access Journals (Sweden)

    Egelja Adela D.

    2007-01-01

    Full Text Available The carbothermal reduction processing of partially mineralized fir (Abies alba samples was used to obtain highly-porous SiC ceramics with cellular structure. The infiltration of TEOS (tetraetilortosilikat, Si(OC2H54 as a silica source, was conducted in order to carry out the mineralization process. Synthesis of the SiC was achieved with a C/SiO2 replica annealing at 1723 K in Ar atmosphere. The obtained samples were characterized using X-ray photoelectron spectroscopy (XPS, scanning electron microscopy (SEM and energy dispersive spectrometry (EDS. The experimental results revealed that the hierarchical bimorphous wood structure was preserved even after high-temperature treatment. Microstructural characterization of the ceramics revealed the presence of the P-SiC phase and traces of the a-SiC phase.

  2. Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001).

    Science.gov (United States)

    Li, Lianbi; Zang, Yuan; Hu, Jichao; Lin, Shenghuang; Chen, Zhiming

    2017-05-25

    The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL) on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001) Si-face by chemical vapor deposition. TEM characterizations of the p/n-Si DSL confirmed the epitaxial growth of the Si films with preferred orientation and the misfit dislocations with a Burgers vector of 1/3 at the p-Si/n-Si interface. The device had an obvious rectifying behavior, and the turn-on voltage was about 1.2 V. Under the visible illumination of 0.6 W/cm², the device demonstrated a significant photoelectric response with a photocurrent density of 2.1 mA/cm². Visible light operation of the Si-DSL/6H-SiC heterostructure was realized for the first time.

  3. Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001

    Directory of Open Access Journals (Sweden)

    Lianbi Li

    2017-05-01

    Full Text Available The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001 Si-face by chemical vapor deposition. TEM characterizations of the p/n-Si DSL confirmed the epitaxial growth of the Si films with preferred orientation and the misfit dislocations with a Burgers vector of 1/3 <21-1> at the p-Si/n-Si interface. The device had an obvious rectifying behavior, and the turn-on voltage was about 1.2 V. Under the visible illumination of 0.6 W/cm2, the device demonstrated a significant photoelectric response with a photocurrent density of 2.1 mA/cm2. Visible light operation of the Si-DSL/6H-SiC heterostructure was realized for the first time.

  4. Electrical resistivity and thermal conductivity of SiC/Si ecoceramics prepared from sapele wood biocarbon

    Science.gov (United States)

    Parfen'eva, L. S.; Orlova, T. S.; Smirnov, B. I.; Smirnov, I. A.; Misiorek, H.; Mucha, J.; Jezowski, A.; Gutierrez-Pardo, A.; Ramirez-Rico, J.

    2012-10-01

    Samples of β-SiC/Si ecoceramics with a silicon concentration of ˜21 vol % have been prepared using a series of consecutive procedures (carbonization of sapele wood biocarbon, synthesis of high-porosity biocarbon with channel-type pores, infiltration of molten silicon into empty channels of the biocarbon, formation of β-SiC, and retention of residual silicon in channels of β-SiC). The electrical resistivity ρ and thermal conductivity κ of the β-SiC/Si ecoceramic samples have been measured in the temperature range 5-300 K. The values of ρ{Si/chan}( T) and κ{Si/chan}( T) have been determined for silicon Sichan located in β-SiC channels of the synthesized β-SiC/Si ecoceramics. Based on the performed analysis of the obtained results, the concentration of charge carriers (holes) in Sichan has been estimated as p ˜ 1019 cm-3. The factors that can be responsible for such a high value of p have been discussed. The prospects for practical application of β-SiC/Si ecoceramics have been considered.

  5. One-dimensional Si nanolines in hydrogenated Si(001)

    Science.gov (United States)

    François, Bianco; Köster, Sigrun A.; Owen, James G. H.; Renner, Christoph; Bowler, David R.

    2012-02-01

    We present a detailed study of the structural and electronic properties of a self-assembled silicon nanoline embedded in the H-terminated silicon (001) surface, known as the Haiku stripe. The nanoline is a perfectly straight and defect free endotaxial structure of huge aspect ratio; it can grow micrometre long at a constant width of exactly four Si dimers (1.54 nm). Another remarkable property is its capacity to be exposed to air without suffering any degradation. The nanoline grows independently of any step edges at tunable densities, from isolated nanolines to a dense array of nanolines. In addition to these unique structural characteristics, scanning tunnelling microscopy and density functional theory reveal a one-dimensional state confined along the Haiku core. This nanoline is a promising candidate for the long sought after electronic solid-state one-dimensional model system to explore the fascinating quantum properties emerging in such reduced dimensionality. Phys. Rev. B, 84, 035328 (2011)

  6. Experimental and theoretical studies of Si-CN bonds to eliminate interface states at Si/SiO 2 interface

    Science.gov (United States)

    Maida, Osamu; Asano, Akira; Takahashi, Masao; Iwasa, Hitoo; Kobayashi, Hikaru

    2003-09-01

    Cyanide treatment, which includes the immersion of Si in KCN solutions followed by a rinse, effectively passivates interface states at Si/SiO 2 interfaces by the reaction of CN - ions with interface states to form Si-CN bonds. X-ray photoelectron spectroscopy (XPS) measurements show that the concentration of the CN species in the surface region after the cyanide treatment is ˜0.25 at.%. Take-off angle-dependent measurements of the XPS spectra indicate that the concentration of the CN species increases with the depth from the Si/SiO 2 interface at least up to ˜2 nm when ultrathin SiO 2 layers are formed at 450 °C after the cyanide treatment. When the cyanide treatment is applied to metal-oxide-semiconductor (MOS) solar cells with structure, the photovoltage greatly increases, leading to a high conversion efficiency of 16.2% in spite of the simple cell structure with no pn-junction. Si-CN bonds are not ruptured by air mass 1.5 100 mW cm -2 irradiation for 1000 h, and consequently the solar cells show no degradation. Neither are Si-CN bonds broken by heat treatment at 800 °C performed after the cyanide treatment. The thermal and irradiation stability of the cyanide treatment is attributable to strong Si-CN bonds, whose bond energy is calculated to be 1 eV higher than that of the Si-H bond energy using a density functional method.

  7. Fluorescent SiC as a New Platform for Visible and Infrared Emitting Applications as Well as Prospective Photovoltaics

    DEFF Research Database (Denmark)

    Syvaejaervi, Mikael; Sun, Jianwu; Wellmann, Peter

    of the polytypes covers a broad range of emission in the visible and infrared region, and the fluorescent SiC can act as a base material for SiC based light emitting materials having benefits of the SiC properties such as chemical stability, high thermal conduction and matching with nitride growth for LED......Fluorescent SiC is a novel materials system which may be a new platform for visible and infrared emitting applications. Although SiC is an indirect bandgap semiconductor, the donor acceptor pair emissions involving deep acceptors could become efficient if the acceptor envelope function...... are sufficiently localized. Nitrogen and boron co-doped SiC exhibits a high efficient donor acceptor pair emission at room temperature. Such donor acceptor pair emission exhibits a broad emission band in the wavelength ranging from visible to infrared region depending on the SiC polytypes. In 6H-SiC the emission...

  8. Graphene/Si-nanowire heterostructure molecular sensors.

    Science.gov (United States)

    Kim, Jungkil; Oh, Si Duk; Kim, Ju Hwan; Shin, Dong Hee; Kim, Sung; Choi, Suk-Ho

    2014-06-20

    Wafer-scale graphene/Si-nanowire (Si-NW) array heterostructures for molecular sensing have been fabricated by vertically contacting single-layer graphene with high-density Si NWs. Graphene is grown in large scale by chemical vapour deposition and Si NWs are vertically aligned by metal-assisted chemical etching of Si wafer. Graphene plays a key role in preventing tips of vertical Si NWs from being bundled, thereby making Si NWs stand on Si wafer separately from each other under graphene, a critical structural feature for the uniform Schottky-type junction between Si NWs and graphene. The molecular sensors respond very sensitively to gas molecules by showing 37 and 1280% resistance changes within 3.5/0.15 and 12/0.15 s response/recovery times under O2 and H2 exposures in air, respectively, highest performances ever reported. These results together with the sensor responses in vacuum are discussed based on the surface-transfer doping mechanism.

  9. SiD Letter of Intent

    Energy Technology Data Exchange (ETDEWEB)

    Aihara, H., (Ed.); Burrows, P., (Ed.); Oreglia, M., (Ed.); Berger, E.L.; Guarino, V.; Repond, J.; Weerts, H.; Xia, L.; Zhang, J.; /Argonne, HEP; Zhang, Q.; /Argonne, HEP /Beijing, Inst. High Energy Phys.; Srivastava, A.; /Birla Inst. Tech. Sci.; Butler, J.M.; /Boston U.; Goldstein, Joel; Velthuis, J.; /Bristol U.; Radeka, V.; /Brookhaven; Zhu, R.-Y.; /Caltech.; Lutz, P.; /DAPNIA, Saclay; de Roeck, A.; Elsener, K.; Gaddi, A.; Gerwig, H.; /CERN /Cornell U., LNS /Ewha Women' s U., Seoul /Fermilab /Gent U. /Darmstadt, GSI /Imperial Coll., London /Barcelona, Inst. Microelectron. /KLTE-ATOMKI /Valencia U., IFIC /Cantabria Inst. of Phys. /Louis Pasteur U., Strasbourg I /Durham U., IPPP /Kansas State U. /Kyungpook Natl. U. /Annecy, LAPP /LLNL, Livermore /Louisiana Tech. U. /Paris U., VI-VII /Paris U., VI-VII /Munich, Max Planck Inst. /MIT, LNS /Chicago, CBC /Moscow State U. /Nanjing U. /Northern Illinois U. /Obninsk State Nucl. Eng. U. /Paris U., VI-VII /Strasbourg, IPHC /Prague, Inst. Phys. /Princeton U. /Purdue U. /Rutherford /SLAC /SUNY, Stony Brook /Barcelona U. /Bonn U. /UC, Davis /UC, Santa Cruz /Chicago U. /Colorado U. /Delhi U. /Hawaii U. /Helsinki U. /Indiana U. /Iowa U. /Massachusetts U., Amherst /Melbourne U. /Michigan U. /Minnesota U. /Mississippi U. /Montenegro U. /New Mexico U. /Notre Dame U. /Oregon U. /Oxford U. /Ramon Llull U., Barcelona /Rochester U. /Santiago de Compostela U., IGFAE /Hefei, CUST /Texas U., Arlington /Texas U., Dallas /Tokyo U. /Washington U., Seattle /Wisconsin U., Madison /Wayne State U. /Yale U. /Yonsei U.

    2012-04-11

    This document presents the current status of the Silicon Detector (SiD) effort to develop an optimized design for an experiment at the International Linear Collider. It presents detailed discussions of each of SiD's various subsystems, an overview of the full GEANT4 description of SiD, the status of newly developed tracking and calorimeter reconstruction algorithms, studies of subsystem performance based on these tools, results of physics benchmarking analyses, an estimate of the cost of the detector, and an assessment of the detector R and D needed to provide the technical basis for an optimised SiD.

  10. Si isotope homogeneity of the solar nebula

    Energy Technology Data Exchange (ETDEWEB)

    Pringle, Emily A.; Savage, Paul S.; Moynier, Frédéric [Department of Earth and Planetary Sciences and McDonnell Center for the Space Sciences, Washington University in St. Louis, One Brookings Drive, St. Louis, MO 63130 (United States); Jackson, Matthew G. [Department of Earth Science, University of California, Santa Barbara, CA 93109 (United States); Barrat, Jean-Alix, E-mail: eapringle@wustl.edu, E-mail: savage@levee.wustl.edu, E-mail: pringle@ipgp.fr, E-mail: moynier@ipgp.fr, E-mail: jackson@geol.ucsb.edu, E-mail: Jean-Alix.Barrat@univ-brest.fr [Université Européenne de Bretagne, Université de Brest, CNRS UMR 6538 (Domaines Océaniques), I.U.E.M., Place Nicolas Copernic, F-29280 Plouzané Cedex (France)

    2013-12-20

    The presence or absence of variations in the mass-independent abundances of Si isotopes in bulk meteorites provides important clues concerning the evolution of the early solar system. No Si isotopic anomalies have been found within the level of analytical precision of 15 ppm in {sup 29}Si/{sup 28}Si across a wide range of inner solar system materials, including terrestrial basalts, chondrites, and achondrites. A possible exception is the angrites, which may exhibit small excesses of {sup 29}Si. However, the general absence of anomalies suggests that primitive meteorites and differentiated planetesimals formed in a reservoir that was isotopically homogenous with respect to Si. Furthermore, the lack of resolvable anomalies in the calcium-aluminum-rich inclusion measured here suggests that any nucleosynthetic anomalies in Si isotopes were erased through mixing in the solar nebula prior to the formation of refractory solids. The homogeneity exhibited by Si isotopes may have implications for the distribution of Mg isotopes in the solar nebula. Based on supernova nucleosynthetic yield calculations, the expected magnitude of heavy-isotope overabundance is larger for Si than for Mg, suggesting that any potential Mg heterogeneity, if present, exists below the 15 ppm level.

  11. Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111/Si(111

    Directory of Open Access Journals (Sweden)

    Abe Shunsuke

    2010-01-01

    Full Text Available Abstract Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111 thin films on Si(111 has been studied. The change in the surface composition during graphene epitaxy is monitored by in situ temperature-programmed desorption spectroscopy using deuterium as a probe (D2-TPD and complementarily by ex situ Raman and C1s core-level spectroscopies. The surface of the 3C-SiC(111/Si(111 is Si-terminated before the graphitization, and it becomes C-terminated via the formation of C-rich (6√3 × 6√3R30° reconstruction as the graphitization proceeds, in a similar manner as the epitaxy of graphene on Si-terminated 6H-SiC(0001 proceeds.

  12. 29 Si nuclear magnetic resonance study of URu 2 Si 2 under pressure

    Energy Technology Data Exchange (ETDEWEB)

    Shirer, K. R.; Dioguardi, A. P.; Bush, B. T.; Crocker, J.; Lin, C. H.; Klavins, P.; Cooley, J. C.; Maple, M. B.; Chang, K. B.; Poeppelmeier, K. R.; Curro, N. J.

    2016-01-01

    Wereport 29Si nuclearmagneticresonancemeasurementsofsinglecrystalsandalignedpowdersof URu2Si2 under pressureinthehiddenorderandparamagneticphases.We find thattheKnightshift decreases withappliedpressure,consistentwithpreviousmeasurementsofthestaticmagneticsus- ceptibility.Previousmeasurementsofthespinlatticerelaxationtimerevealedapartialsuppressionof the densityofstatesbelow30K.Thissuppressionpersistsunderpressure,andtheonsettemperatureis mildly enhanced.

  13. Fermi surfaces of YRu2Si2 and LaRu2Si2

    International Nuclear Information System (INIS)

    Settai, R.; Ikezawa, H.; Toshima, H.; Takashita, M.; Ebihara, T.; Sugawara, H.; Kimura, T.; Motoki, K.; Onuki, Y.

    1995-01-01

    We have measured the de Haas-van Alphen effect of YRu 2 Si 2 and LaRu 2 Si 2 to clarify the Fermi surfaces and cyclotron masses. Main hole-Fermi surfaces of both compounds with a distorted ellipsoid shape are similar, occupying about half of the Brillouin zone. The small hole-Fermi surfaces with the shape of a rugby ball are three in number for LaRu 2 Si 2 , and one for YRu 2 Si 2 . An electron-Fermi surface consists of a doughnut like shape for LaRu 2 Si 2 , while a cylinder along the [001] direction and a multiply-connected shape exist for YRu 2 Si 2 . The cyclotron masses of YRu 2 Si 2 are a little larger than those of LaRu 2 Si 2 . ((orig.))

  14. Vertically Conductive Single-Crystal SiC-Based Bragg Reflector Grown on Si Wafer

    Science.gov (United States)

    Massoubre, David; Wang, Li; Hold, Leonie; Fernandes, Alanna; Chai, Jessica; Dimitrijev, Sima; Iacopi, Alan

    2015-11-01

    Single-crystal silicon carbide (SiC) thin-films on silicon (Si) were used for the fabrication and characterization of electrically conductive distributed Bragg reflectors (DBRs) on 100 mm Si wafers. The DBRs, each composed of 3 alternating layers of SiC and Al(Ga)N grown on Si substrates, show high wafer uniformity with a typical maximum reflectance of 54% in the blue spectrum and a stopband (at 80% maximum reflectance) as large as 100 nm. Furthermore, high vertical electrical conduction is also demonstrated resulting to a density of current exceeding 70 A/cm2 above 1.5 V. Such SiC/III-N DBRs with high thermal and electrical conductivities could be used as pseudo-substrate to enhance the efficiency of SiC-based and GaN-based optoelectronic devices on large Si wafers.

  15. Recycling of Al-Si die casting scraps for solar Si feedstock

    Science.gov (United States)

    Seo, Kum-Hee; Jeon, Je-Beom; Youn, Ji-Won; Kim, Suk Jun; Kim, Ki-Young

    2016-05-01

    Recycling of aluminum die-casting scraps for solar-grade silicon (SOG-Si) feedstock was performed successfully. 3 N purity Si was extracted from A383 die-casting scrap by using the combined process of solvent refining and an advanced centrifugal separation technique. The efficiency of separating Si from scrap alloys depended on both impurity level of scraps and the starting temperature of centrifugation. Impurities in melt and processing temperature governed the microstructure of the primary Si. The purity of Si extracted from the scrap melt was 99.963%, which was comparable to that of Si extracted from a commercial Al-30 wt% Si alloy, 99.980%. The initial purity of the scrap was 2.2% lower than that of the commercial alloy. This result confirmed that die-casting scrap is a potential source of high-purity Si for solar cells.

  16. Influence of modifier on base Al and Si on structure and elongation Al-7%Si alloy

    Directory of Open Access Journals (Sweden)

    T. Lipiński

    2008-08-01

    Full Text Available A homogenous modifier with Al and Si obtained by the rapid solidification at a cooling rate equal to v=200 K/s was applied to the modification of the Al-7%Si alloy. The different modifiers were obtained by means of the Al-Si alloys. The components Al, Al-7%Si and Al-12%Si were put into crucible containing the liquid Al-7%Si alloy and kept for one minute to obtain a new homogenous alloy which after break-up was homogenous modifier. Both, effect of cooling rate applied to obtain modifier and weight in weight modifier concentration in the melt on structure and elongations of Al-7%Si alloy are determined. A structural, and elongations resulting from the Al-7%Si alloy treatment by modifiers are studied in details.

  17. Effect of irradiation on thermal expansion of SiCf/SiC composites

    International Nuclear Information System (INIS)

    Senor, D.J.; Trimble, D.J.; Woods, J.J.

    1996-06-01

    Linear thermal expansion was measured on five different SiC-fiber-reinforced/SiC-matrix (SiC f /SiC) composite types in the unirradiated and irradiated conditions. Two matrices were studied in combination with Nicalon CG reinforcement and a 150 nm PyC fiber/matrix interface: chemical vapor infiltrated (CVI) SiC and liquid-phase polymer impregnated precursor (PIP) SiC. Composites of PIP SiC with Tyranno and HPZ fiber reinforcement and a 150 nm PyC interface were also tested, as were PIP SiC composites with Nicalon CG reinforcement and a 150 nm BN fiber/matrix interface. The irradiation was conducted in the Experimental Breeder Reactor-II at a nominal temperature of 1,000 C to doses of either 33 or 43 dpa-SiC. Irradiation caused complete fiber/matrix debonding in the CVI SiC composites due to a dimensional stability mismatch between fiber and matrix, while the PIP SiC composites partially retained their fiber/matrix interface after irradiation. However, the thermal expansion of all the materials tested was found to be primarily dependent on the matrix and independent of either the fiber or the fiber/matrix interface. Further, irradiation had no significant effect on thermal expansion for either the CVI SiC or PIP SiC composites. In general, the thermal expansion of the CVI SiC composites exceeded that of the PIP SiC composites, particularly at elevated temperatures, but the expansion of both matrix types was less than chemical vapor deposited (CVD) β-SiC at all temperatures

  18. Polycrystalline SiC as source material for the growth of fluorescent SiC layers

    DEFF Research Database (Denmark)

    Kaiser, M.; Hupfer, T.; Jokubavicus, V.

    2013-01-01

    Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC ingots grown by the Physical Vapor Transport...... method. The grain influence on the growth rate of fluorescent SiC layers grown by a sublimation epitaxial process is discussed in respect of surface kinetics....

  19. Passivation of surface-nanostructured f-SiC and porous SiC

    DEFF Research Database (Denmark)

    Ou, Haiyan; Lu, Weifang; Ou, Yiyu

    The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper.......The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper....

  20. Minimum bar size for flexure testing of irradiated SiC/SiC composite

    International Nuclear Information System (INIS)

    Youngblood, G.E.; Jones, R.H.

    1998-01-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23-24, 1997. The minimum bar size for 4-point flexure testing of SiC/SiC composite recommended by PNNL for irradiation effects studies is 30 x 6 x 2 mm 3 with a span-to-depth ratio of 10/1

  1. Tunneling magnetoresistance in Si nanowires

    KAUST Repository

    Montes Muñoz, Enrique

    2016-11-09

    We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green\\'s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we systematically study the spin transport properties for neutral nanowires and both n and p doping conditions. We find a substantial low bias magnetoresistance for the neutral case, which halves for an applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the magnetoresistance, as soon as the conductance is no longer dominated by tunneling.

  2. Addimer diffusions on Si(100)

    International Nuclear Information System (INIS)

    Lee, Gun Do; Wang, C. Z.; Lu, Z. Y.; Ho, K. M.

    1999-01-01

    The diffusion pathways along the trough and between the trough and the dimer row on the Si(100) surface are investigated by tight-binding molecular dynamics calculations using the environment dependent tight-binding silicon potential and by ab initio calculations using the Car-Parrinello method. The studies discover new diffusion pathways consisting of rotation of addimer. The calculated energy barrier are in excellent agreement with experiment. The rotational diffusion pathway between the trough and the dimer row is much more energetically favorable than other diffusion pathways by parallel and perpendicular addimer. The new pathway along the trough is nearly same as the energy barrier of the diffusion pathway by dissociation of the addimer

  3. Synthesis, characterization, and wear and friction properties of variably structured SiC/Si elements made from wood by molten Si impregnation

    DEFF Research Database (Denmark)

    Dhiman, Rajnish; Rana, Kuldeep; Bengu, Erman

    2012-01-01

    We have synthesized pre-shaped SiC/Si ceramic material elements from charcoal (obtained from wood) by impregnation with molten silicon, which takes place in a two-stage process. In the first process, a porous structure of connected micro-crystals of β-SiC is formed, while, in the second process......, molten Si totally or partly infiltrates the remaining open regions. This process forms a dense material with cubic (β-)SiC crystallites, of which the majority is imbedded in amorphous Si. The synthesis of preshaped “sprocket” elements demonstrates that desired shapes of such a dense SiC/Si composite...

  4. Effect of starting composition on formation of MoSi2–SiC ...

    Indian Academy of Sciences (India)

    20 h). On the other hand, annealing led to transformation of HTP to low temperature polymorph (LTP) of MoSi2. Mo5Si3 was formed during annealing as a product of a reaction between MoSi2 and excess graphite. Mean grain size <50 nm was ...

  5. Microstructure and abrasive wear studies of laser clad Al-Si/SiC composite coatings

    NARCIS (Netherlands)

    Anandkumar, R.; Colaco, R.; Ocelik, V.; De Hosson, J. Th. M.; Vilar, R.; Gyulai, J; Szabo, PJ

    2007-01-01

    Surface coatings of Al-Si/SiC metal-matrix composites were deposited on Al-7 wt. % Si alloy substrates by laser cladding. The microstructure of the coatings was characterized by optical microscopy, scanning electron microscopy (SEM) and X-ray diffraction (XRD). The microstructure of the coating

  6. Fabrication and characterization of Ti3SiC2–SiC nanocomposite by ...

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 34; Issue 7. Fabrication and characterization of Ti3SiC2–SiC nanocomposite by in situ reaction synthesis of TiC/Si/Al powders. Baoyan Liang Mingzhi Wang Xiaopu Li Yunchao Mu. Volume 34 Issue 7 December 2011 pp 1309-1311 ...

  7. The effect of biaxial strain on impurity diffusion in Si and SiGe

    DEFF Research Database (Denmark)

    Larsen, Arne Nylandsted; Zangenberg, Nikolaj; Fage-Pedersen, Jacob

    2005-01-01

    Results from diffusion studies of different impurities in biaxially strained Si and Si"1"-"xGe"x for low x-values will be presented. The structures are all molecular-beam epitaxy (MBE) grown on strain-relaxed Si"1"-"xGe"x layers, and the impurity profiles are introduced during growth. We have...

  8. siRNAmod: A database of experimentally validated chemically modified siRNAs.

    Science.gov (United States)

    Dar, Showkat Ahmad; Thakur, Anamika; Qureshi, Abid; Kumar, Manoj

    2016-01-28

    Small interfering RNA (siRNA) technology has vast potential for functional genomics and development of therapeutics. However, it faces many obstacles predominantly instability of siRNAs due to nuclease digestion and subsequently biologically short half-life. Chemical modifications in siRNAs provide means to overcome these shortcomings and improve their stability and potency. Despite enormous utility bioinformatics resource of these chemically modified siRNAs (cm-siRNAs) is lacking. Therefore, we have developed siRNAmod, a specialized databank for chemically modified siRNAs. Currently, our repository contains a total of 4894 chemically modified-siRNA sequences, comprising 128 unique chemical modifications on different positions with various permutations and combinations. It incorporates important information on siRNA sequence, chemical modification, their number and respective position, structure, simplified molecular input line entry system canonical (SMILES), efficacy of modified siRNA, target gene, cell line, experimental methods, reference etc. It is developed and hosted using Linux Apache MySQL PHP (LAMP) software bundle. Standard user-friendly browse, search facility and analysis tools are also integrated. It would assist in understanding the effect of chemical modifications and further development of stable and efficacious siRNAs for research as well as therapeutics. siRNAmod is freely available at: http://crdd.osdd.net/servers/sirnamod.

  9. Thermal Stability of siRNA Modulates Aptamer- conjugated siRNA Inhibition

    Directory of Open Access Journals (Sweden)

    Alexey Berezhnoy

    2012-01-01

    Full Text Available Oligonucleotide aptamer-mediated in vivo cell targeting of small interfering RNAs (siRNAs is emerging as a useful approach to enhance the efficacy and reduce the adverse effects resulting from siRNA-mediated genetic interference. A current main impediment in aptamer-mediated siRNA targeting is that the activity of the siRNA is often compromised when conjugated to an aptamer, often requiring labor intensive and time consuming design and testing of multiple configurations to identify a conjugate in which the siRNA activity has not been significantly reduced. Here, we show that the thermal stability of the siRNA is an important parameter of siRNA activity in its conjugated form, and that siRNAs with lower melting temperature (Tm are not or are minimally affected when conjugated to the 3′ end of 2′F-pyrimidine-modified aptamers. In addition, the configuration of the aptamer-siRNA conjugate retains activity comparable with the free siRNA duplex when the passenger strand is co-transcribed with the aptamer and 3′ overhangs on the passenger strand are removed. The approach described in this paper significantly reduces the time and effort necessary to screening siRNA sequences that retain biological activity upon aptamer conjugation, facilitating the process of identifying candidate aptamer-siRNA conjugates suitable for in vivo testing.

  10. Study of indentation induced cracks in MoSi2-reaction bonded SiC ...

    Indian Academy of Sciences (India)

    Unknown

    SiC ceramics. O P CHAKRABARTI*, P K DAS and S MONDAL. Central Glass and Ceramic Research Institute, Kolkata 700 032, India. Abstract. MoSi2–RBSC composite samples were prepared by infiltration of Si–2 at.% Mo melt into a preform of commercial SiC and petroleum coke powder. The infiltrated sample had a ...

  11. Parametric excitation of a SiN membrane via piezoelectricity

    Science.gov (United States)

    Wu, Shuhui; Sheng, Jiteng; Zhang, Xiaotian; Wu, Yuelong; Wu, Haibin

    2018-01-01

    We develop a stoichiometric silicon nitride (SiN) membrane-based electromechanical system, in which the spring constant of the mechanical resonator can be dynamically controlled via piezoelectric actuation. The degenerate parametric amplifier is studied in this configuration. We observe the splitting of mechanical mode in the response spectra of a phase-sensitive parametric amplifier. In addition, we demonstrate that the quality factor Q of the membrane oscillator can be significantly enhanced by more than two orders of magnitude due to the coherent amplification, reaching an effective Q factor of ˜3 × 108 at room temperature. The nonlinear effect on the parametric amplification is also investigated, as well as the thermomechanical noise squeezing. This system offers the possibility to integrate electrical, optical and mechanical degrees of freedom without compromising the exceptional material properties of SiN membranes, and can be a useful platform for studying cavity optoelectromechanics.

  12. Parametric excitation of a SiN membrane via piezoelectricity

    Directory of Open Access Journals (Sweden)

    Shuhui Wu

    2018-01-01

    Full Text Available We develop a stoichiometric silicon nitride (SiN membrane-based electromechanical system, in which the spring constant of the mechanical resonator can be dynamically controlled via piezoelectric actuation. The degenerate parametric amplifier is studied in this configuration. We observe the splitting of mechanical mode in the response spectra of a phase-sensitive parametric amplifier. In addition, we demonstrate that the quality factor Q of the membrane oscillator can be significantly enhanced by more than two orders of magnitude due to the coherent amplification, reaching an effective Q factor of ∼3 × 108 at room temperature. The nonlinear effect on the parametric amplification is also investigated, as well as the thermomechanical noise squeezing. This system offers the possibility to integrate electrical, optical and mechanical degrees of freedom without compromising the exceptional material properties of SiN membranes, and can be a useful platform for studying cavity optoelectromechanics.

  13. SI konkurss / Anna Roomet

    Index Scriptorium Estoniae

    Roomet, Anna

    2006-01-01

    Konkursist, auhinnatseremooniast ja ekspositsioonist Arhitektuuri- ja Disainigaleriis, žürii koosseis. Intervjuu eesti parima noore disaineri preemia SÄSI pälvinud Pavel Sidorenko ning väikese SÄSI saanud Björn Koobi, Ülle Jehe ja Igor Volkoviga

  14. Natural 32Si as environmental tracer

    International Nuclear Information System (INIS)

    Morgenstern, U.

    2005-01-01

    There is a pressing need for an effective dating tool to cover the historical past. Cosmogenic 32 Si, with a half-life of ca. 140 years, is ideally suited to provide time information in the range 50-1000 years. Detection of 32 Si is, however, very difficult due to extremely low natural concentrations and isotopic ratios. (author). 2 refs

  15. SiC MEMS For Harsh Environments

    National Research Council Canada - National Science Library

    Bradley, Kenneth

    2003-01-01

    This document is the final technical report for the SiC MEMS for Harsh Environments in-house research program jointly coordinated between AFRL/MNMF and AFRL/MLPS, and addresses the benefits of silicon carbide (SiC...

  16. Langley Research Center - Soluble Imide (LaRC-SI)

    Science.gov (United States)

    Stang, David

    1995-01-01

    This report is about experimenting and developing uses for the new thermal plastic developed by Dr. Robert Bryant called the 'Langley Research Center - Soluble Imide' (LaRC-SI). The three developments are: the use of the LaRC-SI as a dielectric for thin film sensors, as an adhesive to place diamonds on surfaces to increase thermal conductivity, and as an intermediate layer to allow the placement of metal on aluminum nitride. The LaRC-SI was developed by Dr. Robert G. Bryant, a chemical engineer at NASA Langley Research Center. The unique properties of this material is that it is an amorphous thermoplastic. This means that it can be reformed at elevated temperature and pressures. It can be applied in the form of a spray, spin, dip coating, paint, or spread with a doctors blade. The LaRC-SI has excellent adhesive and dielectric properties. It can also be recycled. Potential applications for this material are resin for mechanical parts such as gears, bearings and valves, advanced composites like carbon fiber, high strength adhesives, thin film circuits, and as a dielectric film for placing electrical components on conductive materials.

  17. Synthesis of Hybrid SiC/SiO2 Nanoparticles and Their Polymer Nanocomposites

    Science.gov (United States)

    Hassan, Tarig A.; Rangari, Vijaya K.; Baker, Fredric; Jeelani, Shaik

    2013-06-01

    In the present investigation, silicon carbide (β-SiC) nanoparticles ( 30 nm) were coated on silicon dioxide (SiO2) nanoparticles ( 200 nm) using sonochemical method. The resultant hybrid nanoparticles were then infused into SC-15 epoxy resin to enhance the thermal and mechanical properties of SC-15 epoxy for structural application. To fabricate an epoxy-based nanocomposite containing SiC/SiO2 hybrid nanoparticles, we have opted a two-step process. In the first step, the silica nanoparticles were coated with SiC nanoparticles using high intensity ultrasonic irradiation. In a second step, 1 wt.% of as-prepared SiC/SiO2 particles were dispersed in epoxy part-A (diglycidylether of bisphenol A) using a high intensity ultrasound for 30 min at 5°C. The part-B (cycloaliphatic amine hardener) of the epoxy was then mixed with part-A-SiC/SiO2 mixture using a high-speed mechanical stirrer for 10 min. The SiC/SiO2/epoxy resin mixture was cured at room temperature for 24 h. The SiC nanoparticles coating on SiO2 was characterized using X-ray diffraction (XRD) and high resolution transmission electron microscope (TEM). The as-prepared nanocomposite samples were characterized using thermo gravimetric analysis (TGA) and differential scanning calorimeter (DSC). Compression tests have been carried out for both nanocomposite and neat epoxy systems. The results indicated that 1 wt.% (SiC) + (SiO2) loading derived improvements in both thermal and mechanical properties when compared to the neat epoxy system.

  18. Rear-Sided Passivation by SiNx:H Dielectric Layer for Improved Si/PEDOT:PSS Hybrid Heterojunction Solar Cells.

    Science.gov (United States)

    Sun, Yiling; Gao, Pingqi; He, Jian; Zhou, Suqiong; Ying, Zhiqin; Yang, Xi; Xiang, Yong; Ye, Jichun

    2016-12-01

    Silicon/organic hybrid solar cells have recently attracted great attention because they combine the advantages of silicon (Si) and the organic cells. In this study, we added a patterned passivation layer of silicon nitride (SiNx:H) onto the rear surface of the Si substrate in a Si/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) ( PSS) hybrid solar cell, enabling an improvement of 0.6 % in the power conversion efficiency (PCE). The addition of the SiNx:H layer boosted the open circuit voltage (V oc) from 0.523 to 0.557 V, suggesting the well-passivation property of the patterned SiNx:H thin layer that was created by plasma-enhanced chemical vapor deposition and lithography processes. The passivation properties that stemmed from front PSS, rear-SiNx:H, front PSS/rear-SiNx:H, etc. are thoroughly investigated, in consideration of the process-related variations.

  19. DLC-Si protective coatings for polycarbonates

    Directory of Open Access Journals (Sweden)

    Damasceno J.C.

    2003-01-01

    Full Text Available In this work, a-C:H:Si (DLC-Si films were produced onto crystalline silicon and polycarbonate substrates by the rf-PACVD technique from gaseous mixtures of CH4 + SiH4 and C2H2 + SiH4. The effects of self-bias and gas composition upon mechanical and optical properties of the films were investigated. Micro-hardness, residual stress, surface roughness and refractive index measurements were employed for characterization. By incorporating low concentrations of silicon and by exploring the more favorable conditions for the rf-PACVD deposition technique, highly adherent DLC-Si thin films were produced with reduced internal stresses (lower than 1 GPa, high hardness (around 20 GPa and high deposition rates (up to 10 µm/h. Results that show the technological viability of this material for application as protective coatings for polycarbonates are also discussed.

  20. Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

    Science.gov (United States)

    Timofeev, V. A.; Nikiforov, A. I.; Tuktamyshev, A. R.; Mashanov, V. I.; Loshkarev, I. D.; Bloshkin, A. A.; Gutakovskii, A. K.

    2018-04-01

    The GeSiSn, SiSn layer growth mechanisms on Si(100) were investigated and the kinetic diagrams of the morphological GeSiSn, SiSn film states in the temperature range of 150 °C-450 °C at the tin content from 0% to 35% were built. The phase diagram of the superstructural change on the surface of Sn grown on Si(100) in the annealing temperature range of 0 °C-850 °C was established. The specular beam oscillations were first obtained during the SiSn film growth from 150 °C to 300 °C at the Sn content up to 35%. The transmission electron microscopy and x-ray diffractometry data confirm the crystal perfection and the pseudomorphic GeSiSn, SiSn film state, and also the presence of smooth heterointerfaces between GeSiSn or SiSn and Si. The photoluminescence for the multilayer periodic GeSiSn/Si structures in the range of 0.6-0.8 eV was detected. The blue shift with the excitation power increase is observed suggesting the presence of a type II heterostructure. The creation of tensile strained Ge films, which are pseudomorphic to the underlying GeSn layer, is confirmed by the results of the formation and analysis of the reciprocal space map in the x-ray diffractometry. The tensile strain in the Ge films reached the value in the range of 0.86%-1.5%. The GeSn buffer layer growth in the Sn content range from 8% to 12% was studied. The band structure of heterosystems based on pseudomorphic GeSiSn, SiSn and Ge layers was calculated and the valence and conduction band subband position dependences on the Sn content were built. Based on the calculation, the Sn content range in the GeSiSn, SiSn, and GeSn layers, which corresponds to the direct bandgap GeSiSn, SiSn, and Ge material, was obtained.

  1. Luminescence of solar cells with a-Si:H/c-Si heterojunctions

    Science.gov (United States)

    Zhigunov, D. M.; Il'in, A. S.; Forsh, P. A.; Bobyl', A. V.; Verbitskii, V. N.; Terukov, E. I.; Kashkarov, P. K.

    2017-05-01

    We have studied the electroluminescence (EL) and photoluminescence (PL) of solar cells containing a-Si:H/c-Si heterojunctions. It is established that both the EL and PL properties of these cells are determined by the radiative recombination of nonequilibrium carriers in crystalline silicon (c-Si). The external EL energy yield (efficiency) of solar cells with a-Si:H/c-Si heterojunctions at room temperature amounts to 2.1% and exceeds the value reached in silicon diode structures. This large EL efficiency can be explained by good passivation of the surface of crystalline silicon and the corresponding increase in lifetime of minority carrier s in these solar cells.

  2. Evaluation of CVI SiC/SiC Composites for High Temperature Applications

    Science.gov (United States)

    Kiser, D.; Almansour, A.; Smith, C.; Gorican, D.; Phillips, R.; Bhatt, R.; McCue, T.

    2017-01-01

    Silicon carbide fiber reinforced silicon carbide (SiC/SiC) composites are candidate materials for various high temperature turbine engine applications because of their high specific strength and good creep resistance at temperatures of 1400 C (2552 F) and higher. Chemical vapor infiltration (CVI) SiC/SiC ceramic matrix composites (CMC) incorporating Sylramic-iBN SiC fiber were evaluated via fast fracture tensile tests (acoustic emission damage characterization to assess cracking behavior), tensile creep testing, and microscopy. The results of this testing and observed material behavior degradation mechanisms are reviewed.

  3. Time-resolved photoluminescence of SiOx encapsulated Si

    Science.gov (United States)

    Kalem, Seref; Hannas, Amal; Österman, Tomas; Sundström, Villy

    Silicon and its oxide SiOx offer a number of exciting electrical and optical properties originating from defects and size reduction enabling engineering new electronic devices including resistive switching memories. Here we present the results of photoluminescence dynamics relevant to defects and quantum confinement effects. Time-resolved luminescence at room temperature exhibits an ultrafast decay component of less than 10 ps at around 480 nm and a slower component of around 60 ps as measured by streak camera. Red shift at the initial stages of the blue luminescence decay confirms the presence of a charge transfer to long lived states. Time-correlated single photon counting measurements revealed a life-time of about 5 ns for these states. The same quantum structures emit in near infrared close to optical communication wavelengths. Nature of the emission is described and modeling is provided for the luminescence dynamics. The electrical characteristics of metal-oxide-semiconductor devices were correlated with the optical and vibrational measurement results in order to have better insight into the switching mechanisms in such resistive devices as possible next generation RAM memory elements. ``This work was supported by ENIAC Joint Undertaking and Laser-Lab Europe''.

  4. Fabrication and characterization of CuxSi1−x films on Si (111 and Si (100 by pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    Song Zhang

    2016-05-01

    Full Text Available The CuxSi1−x thin films have been successfully fabricated by pulsed laser deposition (PLD. The influences of laser energy fluency (I0 and deposition temperature (Td on the phase structure were investigated. The results show that Cu deposited on Si (001 at I0 = 0.5-2.0 J/cm2, and η”-Cu3Si formed on Si (111 at I0 = 1.0-2.0 J/cm2. The films were consisted of Cu, η’-Cu3Si, ε-Cu15Si4 and δ-Cu0.83Si0.17 at Td = 100-500 °C on Si (001. The films were the single phase of η-Cu3Si at Td = 700 °C. In the case of Si (111, the phase structures transformed from Cu to Cu + η’-Cu3Si to η’-Cu3Si to η’-Cu3Si + η-Cu3Si with the increasing of Td. Rectangular grains were formed on Si (001, whereas triangular grains on Si (111. Cu (001 film was epitaxially grown on Si (001 at I0 = 1.5 J/cm2 and Td = 20 °C. η-Cu3Si (001 epitaxial layer was formed on Si (111 at I0 = 1.5 J/cm2 and Td = 700 °C. The epitaxial relationships of Cu (001[100]//Si (001[110] and η-Cu3Si (001[-110]//Si (111[11-2] were identified.

  5. Quantitative analysis of hydrogen in SiO2/SiN/SiO2 stacks using atom probe tomography

    Directory of Open Access Journals (Sweden)

    Yorinobu Kunimune

    2016-04-01

    Full Text Available We have demonstrated that it is possible to reproducibly quantify hydrogen concentration in the SiN layer of a SiO2/SiN/SiO2 (ONO stack structure using ultraviolet laser-assisted atom probe tomography (APT. The concentration of hydrogen atoms detected using APT increased gradually during the analysis, which could be explained by the effect of hydrogen adsorption from residual gas in the vacuum chamber onto the specimen surface. The amount of adsorbed hydrogen in the SiN layer was estimated by analyzing another SiN layer with an extremely low hydrogen concentration (<0.2 at. %. Thus, by subtracting the concentration of adsorbed hydrogen, the actual hydrogen concentration in the SiN layer was quantified as approximately 1.0 at. %. This result was consistent with that obtained by elastic recoil detection analysis (ERDA, which confirmed the accuracy of the APT quantification. The present results indicate that APT enables the imaging of the three-dimensional distribution of hydrogen atoms in actual devices at a sub-nanometer scale.

  6. Boosting light emission from Si-based thin film over Si and SiO(2) nanowires architecture.

    Science.gov (United States)

    Yu, Zhongwei; Qian, Shengyi; Yu, Linwei; Misra, Soumyadeep; Zhang, Pei; Wang, Junzhuan; Shi, Yi; Xu, Ling; Xu, Jun; Chen, Kunji; Roca i Cabarrocas, Pere

    2015-03-09

    Silicon (Si)-based light emitting thin film has been a key ingredient for all-Si-based optoelectronics. Besides material engineering, adopting a novel 3D photonic architecture represents an effective strategy to boost light excitation and extraction from Si-based thin film material. We here explore the use of a nanowires (NW) framework, grown via vapor-liquid-solid mode, to achieve strongly enhanced yellow-green luminescence from SiN(x)O(y)/NW core-shell structure, with an order of magnitude enhancement compared to co-deposited planar references. We found that choosing geometrically-identical but different NW cores (Si or SiO(2)) can lead to profound influence on the overall light emission performance. Combining parametric investigation and theoretical modeling, we have been able to evaluate the key contributions arising from different mechanisms that include near-field enhancement, 3D light trapping and enhanced light extraction. These new findings indicate a new and effective strategy for strong Si-based thin film light emitting source, while being generic enough to be applicable in a wide variety of other thin film materials.

  7. Effects of SiC on Properties of Cu-SiC Metal Matrix Composites

    Science.gov (United States)

    Efe, G. Celebi; Altinsoy, I.; Ipek, M.; Zeytin, S.; Bindal, C.

    2011-12-01

    This paper was focused on the effects of particle size and distribution on some properties of the SiC particle reinforced Cu composites. Copper powder produced by cementation method was reinforced with SiC particles having 1 and 30 μm particle size and sintered at 700 °C. SEM studies showed that SiC particles dispersed in copper matrix homogenously. The presence of Cu and SiC components in composites were verified by XRD analysis technique. The relative densities of Cu-SiC composites determined by Archimedes' principle are ranged from 96.2% to 90.9% for SiC with 1 μm particle size, 97.0 to 95.0 for SiC with 30 μm particle size. Measured hardness of sintered compacts varied from 130 to 155 HVN for SiC having 1 μm particle size, 188 to 229 HVN for SiC having 1 μm particle size. Maximum electrical conductivity of test materials was obtained as 80.0% IACS (International annealed copper standard) for SiC with 1 μm particle size and 83.0% IACS for SiC with 30 μm particle size.

  8. Preparation and Characterization of SiO2/SiCN Core-shell Ceramic Microspheres

    Directory of Open Access Journals (Sweden)

    ZHANG Hai-yuan

    2017-05-01

    Full Text Available The SiO2/PSN core-shell microspheres were prepared via an emulsion reaction combined with the polymer-derived ceramics (PDCs method using polysilazane (PSN in situ polymerization on the surface of SiO2 modified by silane coupling agents MPS, followed by pyrolysis process to obtain SiO2/SiCN core-shell ceramic microspheres. The effects of raw mass ratio, curing time and pyrolysis temperature on the formation and the morphology of core-shell microspheres were studied. The morphology, chemical composition and phase transformation were characterized by SEM, EDS, TEM, FT-IR and XRD. The results show that after reaction for 4h at 200℃, SiO2 completely coated PSN forms a core-shell microsphere with rough surface when the mass ratio of SiO2 and PSN is 1:4; when pyrolysis temperature is at 800-1200℃, amorphous SiO2/SiCN core-shell ceramic microspheres are prepared; at 1400℃, the amorphous phase partially crystallizes to produce SiO2, SiC and Si3N4 phase.

  9. Quasi free-standing epitaxial graphene fabrication on 3C-SiC/Si(111)

    Science.gov (United States)

    Amjadipour, Mojtaba; Tadich, Anton; Boeckl, John J.; Lipton-Duffin, Josh; MacLeod, Jennifer; Iacopi, Francesca; Motta, Nunzio

    2018-04-01

    Growing graphene on SiC thin films on Si is a cheaper alternative to the growth on bulk SiC, and for this reason it has been recently intensively investigated. Here we study the effect of hydrogen intercalation on epitaxial graphene obtained by high temperature annealing on 3C-SiC/Si(111) in ultra-high vacuum. By using a combination of core-level photoelectron spectroscopy, low energy electron diffraction, and near-edge x-ray absorption fine structure (NEXAFS) we find that hydrogen saturates the Si atoms at the topmost layer of the substrate, leading to free-standing graphene on 3C-SiC/Si(111). The intercalated hydrogen fully desorbs after heating the sample at 850 °C and the buffer layer appears again, similar to what has been reported for bulk SiC. However, the NEXAFS analysis sheds new light on the effect of hydrogen intercalation, showing an improvement of graphene’s flatness after annealing in atomic H at 600 °C. These results provide new insight into free-standing graphene fabrication on SiC/Si thin films.

  10. EFFECT OF THE Si POWDER ADDITIONS ON THE PROPERTIES OF SiC COMPOSITES

    Directory of Open Access Journals (Sweden)

    GUOGANG XU

    2012-09-01

    Full Text Available By means of transient plastic phase process, the SiC silicon carbide kiln furniture materials were produced through adding Si powder to SiC materials. At the condition of the same additions of SiO2 powder, the effect of the Si powder additions on properties of silicon carbide materials after sintered at 1450°C for 3 h in air atmosphere was studied by means of SEM and other analysis methods. The results showed that silicon powder contributes to both sintering by liquid state and plastic phase combination to improve the strength of samples. When the Si powder additions is lower than 3.5 %, the density and strength of samples increase and porosity decrease with increasing Si powder additions. However when the Si powder additions is higher than 3.5 %, the density and strength of samples decrease and porosity increase with increasing Si powder additions. With increasing of Si additions, the residual strength of sample after thermal shocked increased and linear change rate decreased, and get to boundary value when Si additions is 4.5 %. The results also indicated that at the same sintering temperature, the sample with 3.5 % silicon powder has maximum strength.

  11. SiC Formation Through Interface Reaction between C60 and Si in Plasma Environment

    Science.gov (United States)

    Ding, Fang; Meng, Liang; Zhu, Xiaodong

    2007-02-01

    The formation of SiC through the interface reaction between C60 and Si in a plasma-assisted chemical vapour deposition system (PACVD) is investigated with a C60 film previously deposited on Si wafers. The composition and structure of the deposited samples were characterized by micro-Raman spectroscopy and X-ray diffraction (XRD). The results showed that SiC film was formed successfully in hydrogen plasma at a substrate temperature of 800°C. The hydrogen atoms in plasma were found to enhance the production of SiC. Furthermore, the effects of the added CH4 on the formation of film were studied. Introduction of CH4 simultaneously with H2 at the beginning would suppress the formation of the initial layer of SiC due to a carbon-rich environment on the substrate, which would be disadvantageous to the further growth of the SiC film.

  12. Radiation-induced redistribution of gold in SiO2-Si structures

    International Nuclear Information System (INIS)

    Bolotov, V.V.; Emeksuzyan, V.M.; Spiridonov, V.N.

    1989-01-01

    Gold distribution in SiO 2 -Si structures after diffusion and its redistribution under irradiation by high-energy electrons are studied by DLTS and SIMS methods. It is shown that the concentration of substitutional gold increases at radiation doses of 10 13 to 10 14 cm -2 , which is due to the presence of a previously inactive interstitial component Au I and its dissolution in vacancies. A radiation dose increase results in radiation-induced gettering of gold by the SiO 2 -Si interface with subsequent penetration of gold into SiO 2 . The state of the SiO 2 -Si interface affects the behaviour of gold at irradiation. (author)

  13. High-speed and highly efficient Si optical modulator with strained SiGe layer

    Science.gov (United States)

    Fujikata, Junichi; Noguchi, Masataka; Kim, Younghyun; Han, Jaehoon; Takahashi, Shigeki; Nakamura, Takahiro; Takenaka, Mitsuru

    2018-03-01

    We developed a high-speed and highly efficient depletion-type Si optical modulator (Si-MOD) with a pn junction by applying a p-type-doped strained SiGe layer, which was stacked on a lateral pn junction-type Si-MOD. We designed an optimum Si-MOD, which is one of the most efficient Si-MODs with a pn junction, and demonstrated highly efficient modulations of 0.67 and 0.81 V·cm for V π L at dc reverse bias voltages of ‑0.5 and ‑2 Vdc, respectively. We also demonstrated a high-speed operation of 25 Gbps for the Si-MOD at a wavelength of around 1.3 µm.

  14. Silicon Effects on Properties of Melt Infiltrated SiC/SiC Composites

    Science.gov (United States)

    Bhatt, Ramakrishna T.; Gyekenyesi, John Z.; Hurst, Janet B.

    2000-01-01

    Silicon effects on tensile and creep properties, and thermal conductivity of Hi-Nicalon SiC/SiC composites have been investigated. The composites consist of 8 layers of 5HS 2-D woven preforms of BN/SiC coated Hi-Nicalon fiber mats and a silicon matrix, or a mixture of silicon matrix and SiC particles. The Hi-Nicalon SiC/silicon and Hi-Nicalon SiC/SiC composites contained about 24 and 13 vol% silicon, respectively. Results indicate residual silicon up to 24 vol% has no significant effect on creep and thermal conductivity, but does decrease the primary elastic modulus and stress corresponding to deviation from linear stress-strain behavior.

  15. Growth and magnetic properties of Mn-doped ZnSiAs{sub 2}/Si heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Kochura, Aleksey [Department of Mathematics and Physics, Lappeenranta University of Technology, P.O. Box 20, 53851 Lappeenranta (Finland); Kursk State Technical University, ul. 50 let Oktyabrya 94, 305040 Kursk (Russian Federation); Fedorchenko, Irina; Marenkin, Sergey [Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, 119991 Moscow (Russian Federation); Laiho, Reino [Wihuri Physical Laboratory, University of Turku, 20014, Turku (Finland); Lashkul, Alexander [Department of Mathematics and Physics, Lappeenranta University of Technology, P.O. Box 20, 53851 Lappeenranta (Finland); Wihuri Physical Laboratory, University of Turku, 20014, Turku (Finland); Zakharov, Ivan [Kursk State Technical University, ul. 50 let Oktyabrya 94, 305040 Kursk (Russian Federation); Laehderanta, Erkki

    2009-05-15

    Mn-doped ZnSiAs{sub 2}/Si heterostructures were grown by vacuum-thermal deposition of ZnAs{sub 2} and Mn layers on Si substrates followed by annealing. The surface contained a ZnSiAs{sub 2} film, but also micro-crystals with a composition close to ZnAs{sub 2} or ZnSiAs{sub 2}-Si-SiAs eutectic. The temperature and field dependencies of the magnetization were measured. Two types of magnetic phases were detected: a paramagnetic one with the mean magnetic moment of 7.6 Bohr magnetons, formed by Mn{sup 2+} ions, and a ferromagnetic one with Curie temperature 340 K in 50 kOe magnetic field, formed by MnAs clusters. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Photoluminescence properties of {beta}-FeSi{sub 2} grains on Si with coating Au layer

    Energy Technology Data Exchange (ETDEWEB)

    Akiyama, K; Kaneko, S; Hirabayashi, Y [Kanagawa Industrial Technology Center, 705-1 Shimoimaizumi, Edina, Kanagawa, 243-0435 (Japan); Yokomizo, K; Itakura, M, E-mail: akiyama@kanagawa-iri.go.jp [Department of Applied Science for Electronics and Materials, Kyusyu University, 6- 1 Kasuga, Fukuoka 816-8580 (Japan)

    2011-10-29

    We have investigated the growth of {beta}-FeSi{sub 2} grains on Si(001) substrates with 90-nm-thick gold layer and its photoluminescence (PL) property. X-ray diffraction and scanning electron microscopy observations revealed that coarse island {beta}-FeSi{sub 2} grains with sizes from several to tens of micrometers were formed on the Si surface. A clear PL spectrum for the {beta}-FeSi{sub 2} grains was observed on as deposited sample by argon-ion laser irradiation to the Si substrate side. The values of the activation energy for a non-radiative recombination path were large, and indicated the formation of high-crystal-quality {beta}-FeSi{sub 2} with a low-level non-radiative center without post-annealing.

  17. Solid-state 27Al and 29Si NMR investigations on Si-substituted hydrogarnets

    International Nuclear Information System (INIS)

    Rivas Mercury, J.M.; Pena, P.; Aza, A.H. de; Turrillas, X.; Sobrados, I.; Sanz, J.

    2007-01-01

    Partially deuterated Ca 3 Al 2 (SiO 4 ) 3-x (OH) 4x hydrates prepared by a reaction in the presence of D 2 O of synthetic tricalcium aluminate with different amounts of amorphous silica were characterized by 29 Si and 27 Al magic-angle spinning nuclear magnetic resonance (NMR) spectroscopy. The 29 Si NMR spectroscopy was used for quantifying the non-reacted silica and the resulting hydrated products. The incorporation of Si into Ca 3 Al 2 (SiO 4 ) 3-x (OH) 4x was followed by 27 Al NMR spectroscopy: Si:OH ratios were determined quantitatively from octahedral Al signals ascribed to Al(OH) 6 and Al(OSi)(OH) 5 environments. The NMR data obtained were consistent with the concentrations of the Al and Si species deduced from transmission electron microscopy energy-dispersive spectrometry and Rietveld analysis of both X-ray and neutron diffraction data

  18. Structural and photoluminescence properties of Si-based nanosheet bundles rooted on Si substrates

    Science.gov (United States)

    Yuan, Peiling; Tamaki, Ryo; Kusazaki, Shinya; Atsumi, Nanae; Saito, Yuya; Kumazawa, Yuki; Ahsan, Nazmul; Okada, Yoshitaka; Ishida, Akihiro; Tatsuoka, Hirokazu

    2018-04-01

    Si-based nanosheet bundles were synthesized by the extraction of Ca atoms from CaSi2 microwalls grown on Si substrates by inositol hexakisphosphate solution or thermal treatment in FeCl2 vapor. The structural and photoluminescence properties of the Si-based nanosheet bundles were examined. The photoluminescence emissions in the visible region were clearly observed, and the temperature and excitation intensity dependences of the emissions were characterized. The observed Si-based nanosheets consist of thin Si layers, and a superlattice-like layered structural model is proposed to describe the Si-based nanosheet bundle structures and their photoluminescence property. The photoluminescence property of the nanosheets significantly depends on their treatment process. The luminescence mechanism of the nanosheets was discussed.

  19. Light emissions from LiNbO sub 3 /SiO sub 2 /Si structures

    CERN Document Server

    Wu, X L; Tang, N; Deng, S S; Bao, X M

    2003-01-01

    LiNbO sub 3 (LN) films with a high degree of (006) texture were deposited on Si-based dense SiO sub 2 layers by pulsed laser deposition. After annealing, the LN/SiO sub 2 /Si structures were revealed to have ultraviolet-, green-, and red-emitting properties related to self-trapped excitons and E' defect pairs in the SiO sub 2 surface, which are induced by the photorefractive effect of the LN films. The emission wavelength can be tuned by introducing different dopants into the LN films. Waveguiding properties of the structures were demonstrated. The results obtained indicate that the LN/SiO sub 2 /Si structures could be expected to have important applications in modern optoelectronic integration. (letter to the editor)

  20. Inherent interface defects in thermal (211)Si/SiO{sub 2}:{sup 29}Si hyperfine interaction

    Energy Technology Data Exchange (ETDEWEB)

    Iacovo, Serena, E-mail: serena.iacovo@fys.kuleuven.be, E-mail: andre.stesmans@fys.kuleuven.be; Stesmans, Andre, E-mail: serena.iacovo@fys.kuleuven.be, E-mail: andre.stesmans@fys.kuleuven.be [Department of Physics and Astronomy, University of Leuven, 3001 Leuven (Belgium)

    2014-10-21

    Low temperature electron spin resonance (ESR) studies were carried out on ‘higher index’ (211)Si/SiO{sub 2} interfaces thermally grown in the temperature range T{sub ox} = 400–1066°C. The data reveal the presence of two species of a P{sub b}-type interface defect, exhibiting a significant difference in defect density. On the basis of the pertinent ESR parameters and interface symmetry, the basic defect is typified as P{sub b0}{sup (211)}, close to the Pb0 center observed in standard (100)Si/SiO{sub 2}. The dominant type is found to pertain to defected Si atoms at (111)Si-face terraces with the dangling bond along the [111] direction at ∼19.5°C with the interface normal, these sites thus apparently predominantly accounting for interface mismatch adaptation. The total of the P{sub b}-type defect appearance clearly reflects the higher-index nature of the interface. It is found that T{sub ox} = 750°C is required to minimize the P{sub b0}{sup (211)} defect density through relaxation of the oxide (interface). Q-band ESR saturation spectroscopy reveals an anisotropic {sup 29}Si (nuclear spin I=1/2) hyperfine (hf) doublet associated with the central P{sub b0}{sup (211)} Zeeman signal, with hf parameters closest to those of the similar hf structure of the P{sub b0}{sup (110)} defect in thermal (110)Si/SiO{sub 2}, adducing independent support to the P{sub b0}{sup (211)} typification.

  1. Influence of SiC coating thickness on mechanical properties of SiCf/SiC composite

    Science.gov (United States)

    Yu, Haijiao; Zhou, Xingui; Zhang, Wei; Peng, Huaxin; Zhang, Changrui

    2013-11-01

    Silicon carbide (SiC) coatings with varying thickness (ranging from 0.14 μm to 2.67 μm) were deposited onto the surfaces of Type KD-I SiC fibres with native carbonaceous surface using chemical vapour deposition (CVD) process. Then, two dimensional SiC fibre reinforced SiC matrix (2D SiCf/SiC) composites were fabricated using polymer infiltration and pyrolysis (PIP) process. Influences of the fibre coating thickness on mechanical properties of SiC fibre and SiCf/SiC composite were investigated using single-filament test and three-point bending test. The results indicated that flexural strength of the composites initially increased with the increasing CVD SiC coating thickness and reached a peak value of 363 MPa at the coating thickness of 0.34 μm. Further increase in the coating thickness led to a rapid decrease in the flexural strength of the composites. The bending modulus of composites showed a monotonic increase with increasing coating thickness. A chemical attack of hydrogen or other ions (e.g. a C-H group) on the surface of SiC fibres during the coating process, owing to the formation of volatile hydrogen, lead to an increment of the surface defects of the fibres. This was confirmed by Wang et al. [35] in their work on the SiC coating of the carbon fibre. In the present study, the existing ˜30 nm carbon on the surface of KD-I fibre [36] made the fibre easy to be attacked. Deposition of non-stoichiometric SiC, causing a decrease in strength. During the CVD process, a small amount of free silicon or carbon always existed [35]. The existence of free silicon, either disordered the structure of SiC and formed a new source of cracks or attacked the carbon on fibre surface resulting in properties degeneration of the KD-I fibre. The effect of residual stress. The different thermal expansion coefficient between KD-I SiC fibre and CVD SiC coating, which are 3 × 10-6 K-1 (RT ˜ 1000 °C) and 4.6 × 10-6 K-1 (RT ˜ 1000 °C), respectively, could cause residual stress

  2. CORRIGENDUM: The mechanism of defect creation and passivation at the SiC/SiO2 interface

    Science.gov (United States)

    Deák, Peter; Knaup, Jan; Thill, Christoph; Frauenheim, Thomas; Hornos, Tamás; Gali, Adam

    2008-02-01

    In a recent rewiew article we have reported—among other things—on preliminary computational studies regarding the effect of nitridation on the SiC/SiO2 interface, in case of n-type doping. We have since discovered a few numerical errors in the paper, which also influence some of our statements. Here we present the correct results and their consequences. 1. Introduction In our review we reported energies of reactions occurring at the SiC/SiO2 interface upon nitridation. Our computational approach was to calculate the energy of incoming and outgoing molecules in a bulk supercell of SiO2, and that of interface defects before or after the reaction in a slab model of the 4H-SiC/SiO2 interface. Incoming molecules in bulk SiO2 were assumed to be neutral, but the interface was coupled to a reservoir of electrons with energy corresponding to the Fermi level of the semiconductor. The latter was determined by the temperature of nitridation (~1100 °C) and the usual doping of the channel region (1015-1016 cm-3) of a MOS (metal-oxide-semiconductor) transistor with an n-type channel, to be 1.9-2.2 eV, with respect to the valence band edge of SiC. Using the calculated total energies, energies of exchange reactions between the models have been calculated, adding a band off-set correction for each electron transfer between the models (to account for the error introduced by using the pseudopotential approximation in two different models). Unfortunately, some of the results were erroneously given. Here we present the correct values, and briefly state the consequences. 2. Corrected results (A) The energy gain on reaction (1) of the original paper is equal to 3EF - 2.7 eV, which gives 3.0-3.9 eV in the Fermi-energy range considered (not, as erroneously reported 1.0-1.3 eV). As a consequence, this reaction is, in fact, dominating over reaction (2) of the original paper with an energy gain of EF + 0.7 eV, i.e., 2.6-2.9 eV in the chosen Fermi-level range. Therefore, nitrogen insertion

  3. Experimental and thermodynamic assessments of substitutions in the AlFeSi, FeMnSi, FeSiZr and AlCaFeSi systems (65 wt % Si) - solidification simulation

    Energy Technology Data Exchange (ETDEWEB)

    Gueneau, C. [CEA Centre d`Etudes de Saclay, 91 - Gif-sur-Yvette (France). Dept. des Procedes d`Enrichissement]|[Paris-11 Univ., 91 - Orsay (France)]|[Compagnie de Produits Chimiques et Electrometallurgiques Pechiney, 74 - Passy-Chedde (France). Lab. Graphitation; Servant, C. [Paris-11 Univ., 91 - Orsay (France); Ansara, I. [Ecole Nationale Superieure d`Electrochimie et d`Electrometallurgie, 38 - Grenoble (France)

    1994-12-31

    The substitutions of Al <-> Si, Fe <-> Mn and Fe <-> Zr in some intermetallic compounds of the Al-Fe-Si, Fe-Mn-Si and Fe-Si-Zr systems are modelled in the Si-rich corner using a two sublattice model. The solidification paths of the studied alloys are determined at equilibrium. The ascalculated phase volume fractions of the alloys are compared to the experimental ones. Finally, a solidification simulation using the Gulliver-Scheil`s model is performed in order to explain the formation of some precipitates experimentally observed. (authors). 14 figs., 19 refs.

  4. Structural and mechanical properties of ZrSiN thin films prepared by reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Freitas, F.G.R.; Conceicao, A.G.S.; Vitoria, E.R.; Carvalho, R.G.; Tentardini, E.K. [Universidade Federal de Sergipe (UFS), Sao Cristovao, SE (Brazil); Hübler, R. [Pontificia Universidade Catolica do Rio Grande do Sul (PUC-RS), Porto Alegre, RS (Brazil); Soares, G., E-mail: flaviogus@hotmail.com, E-mail: etentardini@gmail.com, E-mail: hubler@pucrs.br, E-mail: gabriel.soares@ufrgs.br [Universidade Federal do Rio Grande do Sul (UFRGS), Porto Alegre, RS (Brazil)

    2014-07-01

    Zirconium silicon nitride (ZrSiN) thin films were deposited by reactive magnetron sputtering in order to verify the silicon influence on coating morphology and mechanical properties. The Si/(Zr+Si) ratio was adjusted between 0 to 14.5% just modifying the power applied on the silicon target. Only peaks associated to ZrN crystalline structure were observed in XRD analysis, since Si{sub 3}N{sub 4} phase was amorphous. All samples have (111) preferred orientation, but there is a peak intensity reduction and a broadening increase for the sample with the highest Si/(Zr+Si) ratio (14.5%), demonstrating a considerable loss of crystallinity or grain size reduction (about 8 nm calculated by Scherrer). It was also observed that the texture coefficient for (200) increases with silicon addition. Chemical composition and thickness of the coatings were determined by RBS analysis. No significant changes in nano hardness with increasing Si content were found. The thin film morphology observed by SEM presents columnar and non columnar characteristics. The set of results suggests that Si addition is restricting the columnar growth of ZrN thin films. This conclusion is justified by the fact that Si contributes to increase the ZrN grains nucleation during the sputtering process. (author)

  5. Structural and mechanical properties of ZrSiN thin films prepared by reactive magnetron sputtering

    International Nuclear Information System (INIS)

    Freitas, F.G.R.; Conceicao, A.G.S.; Vitoria, E.R.; Carvalho, R.G.; Tentardini, E.K.; Hübler, R.; Soares, G.

    2014-01-01

    Zirconium silicon nitride (ZrSiN) thin films were deposited by reactive magnetron sputtering in order to verify the silicon influence on coating morphology and mechanical properties. The Si/(Zr+Si) ratio was adjusted between 0 to 14.5% just modifying the power applied on the silicon target. Only peaks associated to ZrN crystalline structure were observed in XRD analysis, since Si 3 N 4 phase was amorphous. All samples have (111) preferred orientation, but there is a peak intensity reduction and a broadening increase for the sample with the highest Si/(Zr+Si) ratio (14.5%), demonstrating a considerable loss of crystallinity or grain size reduction (about 8 nm calculated by Scherrer). It was also observed that the texture coefficient for (200) increases with silicon addition. Chemical composition and thickness of the coatings were determined by RBS analysis. No significant changes in nano hardness with increasing Si content were found. The thin film morphology observed by SEM presents columnar and non columnar characteristics. The set of results suggests that Si addition is restricting the columnar growth of ZrN thin films. This conclusion is justified by the fact that Si contributes to increase the ZrN grains nucleation during the sputtering process. (author)

  6. Pulse electrodeposition and corrosion properties of Ni–Si3N4 ...

    Indian Academy of Sciences (India)

    Administrator

    nitride particles were obtained and the crystal grains on the surface of Ni–Si3N4 composite coating are com- pact. The crystallite ... Keywords. Pulse electro deposition; nanocomposite coating; XRD; SEM; microhardness. 1. Introduction ... nanostructure metals, alloys and nanocomposite coatings with high purity, low porosity ...

  7. Si microchannel plates for image intensification

    Science.gov (United States)

    Smith, Arlynn W.; Beetz, Charles P., Jr.; Boerstler, Robert W.; Winn, D. R.; Steinbeck, John W.

    2000-11-01

    Glass microchannel plates (MCPs) have been in use by numerous manufactuers in a variety of electron multiplication applications. Conventional fabrication of MCPs follow the lines of glass drawing and etching technology. Core and clad glass are drawn together, stacked, drawn again, and finally stacked in the desired pattern. The soluble core is removed with wet chemical processing. These techniques are beginning to run into their feasible limits in terms of channel size, open area ratio, uniformity, and material issues. A strong desire exists to fabricate MCPs with accepted lithographic techniques using Si as the base material to improve uniformity and throughput. Open area ratios of as high as 95% have been achieved using lithography. However, attempts to meet other channel plate characteristics met with little success due to thermal runaway or arcing during operation, high voltage is required for electron gain. Processing improvements have lead to the complete oxidation of the Si matrix eliminating the conducting Si in the channel walls of the Si MCPs allowing high voltages to be supported. Complete oxidation of the Si to silica allows processing temperatures high than conventional glass matrices can withstand. This fact allows for high temperature growth of conductive and secondary emissive materials on the channel walls of the structure. Si MCPs with gain have now been fabricated and tested with voltages comparable to conventional glass MCPs. Channel plate characteristics such as operating voltage, strip current, and gain for Si MCPs will be presented and compared to glass MCPs.

  8. Si Wire-Array Solar Cells

    Science.gov (United States)

    Boettcher, Shannon

    2010-03-01

    Micron-scale Si wire arrays are three-dimensional photovoltaic absorbers that enable orthogonalization of light absorption and carrier collection and hence allow for the utilization of relatively impure Si in efficient solar cell designs. The wire arrays are grown by a vapor-liquid-solid-catalyzed process on a crystalline (111) Si wafer lithographically patterned with an array of metal catalyst particles. Following growth, such arrays can be embedded in polymethyldisiloxane (PDMS) and then peeled from the template growth substrate. The result is an unusual photovoltaic material: a flexible, bendable, wafer-thickness crystalline Si absorber. In this paper I will describe: 1. the growth of high-quality Si wires with controllable doping and the evaluation of their photovoltaic energy-conversion performance using a test electrolyte that forms a rectifying conformal semiconductor-liquid contact 2. the observation of enhanced absorption in wire arrays exceeding the conventional light trapping limits for planar Si cells of equivalent material thickness and 3. single-wire and large-area solid-state Si wire-array solar cell results obtained to date with directions for future cell designs based on optical and device physics. In collaboration with Michael Kelzenberg, Morgan Putnam, Joshua Spurgeon, Daniel Turner-Evans, Emily Warren, Nathan Lewis, and Harry Atwater, California Institute of Technology.

  9. Gold and silver/Si nanocomposite layers

    Energy Technology Data Exchange (ETDEWEB)

    Kleps, Irina [National Institute for Research and Development in Microtechnologies (IMT-Bucharest), P.O. Box 38-160, Bucharest (Romania)], E-mail: irinak@imt.ro; Danila, Mihai; Angelescu, Anca; Miu, Mihaela; Simion, Monica; Ignat, Teodora; Bragaru, Adina [National Institute for Research and Development in Microtechnologies (IMT-Bucharest), P.O. Box 38-160, Bucharest (Romania); Dumitru, Lucia; Teodosiu, Gabriela [Institute of Biology, 296 Splaiul Independentei, P.O. Box 56-53, Bucharest, 060031 (Romania)], E-mail: biologie@ibiol.ro

    2007-09-15

    Ag and Au nanolayers were realised by physical and chemical deposition methods on porous silicon (PS) nanostructured surfaces for biomedical applications: support for living cells, biodegradable material for the slow release of drugs/minerals, and as a bioactive material for scaffolds. Au nanoparticles on nanocrystalline Si are widely used in increasing substrate biocompatibility properties. It has an electrochemical potential of + 0.332 mV and surface energy around 25 erg/cm{sup 2}, close to those of living tissues. The Au nanocrystallites orientation on nanocrystalline Si substrates is also of great interest for application in biochemistry; the Au (111)/nc-Si surface has a higher density of atoms compared with Au (100); this favours the attachment of a higher number of atoms and bio-molecules on the gold surface. Ag nanoparticles on nanocrystalline Si are important for the latter's anti-microbial properties. In minute concentrations, Ag is highly toxic to germs while relatively non-toxic to human cells. Microbes are unlikely to develop a resistance against silver, as they do against conventional and highly targeted antibiotics. The Au and Ag nanoparticles/silicon nanocomposite layers as-deposited and thermally treated were investigated by optical microscopy, X-ray diffraction, and biological tests using eukaryotic and prokaryotic cell cultures. The experimental results sustain the use of Au/Si and Ag/Si or combined Ag/Au/Si nanocomposite structures as biocompatible and anti-microbial matrix.

  10. Molecular Structures of Al/Si and Fe/Si Coprecipitates and the Implication for Selenite Removal.

    Science.gov (United States)

    Chan, Ya-Ting; Kuan, Wen-Hui; Tzou, Yu-Min; Chen, Tsan-Yao; Liu, Yu-Ting; Wang, Ming-Kuang; Teah, Heng-Yi

    2016-04-20

    Aluminum and iron oxides have been often used in the coagulation processes during water purification due to their unique surface properties toward anions. In the presence of silica, the coprecipitation of Al/Si or Fe/Si might decrease the efficiency of wastewater purification and reuse. In this study, surface properties and molecular structures of Al/Si and Fe/Si coprecipitates were characterized using spectroscopic techniques. Also, the selenite removal efficiency of Al/Si and Fe/Si coprecipitates in relation to their surface and structural properties was investigated. While dissolved silicate increased with increasing pH from Fe/Si coprecipitates, less than 7% of silicate was discernible from Al/Si samples over the range from acidic to alkaline conditions. Our spectroscopic results showed that the associations between Al and Si were relatively stronger than that between Fe and Si in coprecipitates. In Al/Si coprecipitates, core-shell structures were developed with AlO6/AlO4 domains as the shells and Si frameworks polymerized from the SiO2 as the cores. However, Si framework remained relatively unchanged upon coprecipitation with Fe hydroxides in Fe/Si samples. The Si core with Al shell structure of Al/Si coprecipitates shielded the negative charges from SiO2 and thereby resulted in a higher adsorption capacity of selenite than Fe/Si coprecipitates.

  11. SiC-SiC and C-SiC Honeycomb for Advanced Flight Structures, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — The proposed project builds upon the work done in Phase I with the development of a C-SiC CMC honeycomb material that was successfully tested for mechanical...

  12. Properties of tribology for Si implanted PET

    International Nuclear Information System (INIS)

    Wu Yuguang; Zhang Tonghe; Zhang Xu; Liu Andong; Xie Mengxia; Zhang Aimin; Chen Jianmin

    2002-01-01

    Polyethylene terephthalate (PET) has been modified with Si ions from a metal vapor arc source (MEVVA). After implantation, the surface structure has been greatly changed. The experimental results of infrared absorption indicated that the particles are referred to rich carbon and SiC particles. The PET has been strengthened by these dispersed particles. The measurement results using nanometer hardness tester reveal that both surface hardness and modulus increase obviously. Therefore the surface wear resistance improved extremely. Finally the modification mechanism of Si implanted PET was discussed

  13. Mechanical and thermal properties of 2D and 3D SiC/SiC composites

    Science.gov (United States)

    Yamada, R.; Taguchi, T.; Igawa, N.

    2000-12-01

    SiC fiber-reinforced SiC composites (SiC/SiC), whose preforms had 3D satin weave or 2D non-woven fabric, were fabricated by chemical vapor infiltration (CVI) or polymer impregnation and pyrolysis (PIP). The 3D satin texture made from Hi-Nicalon Type S fiber was successfully woven although the fiber has high elastic modulus. Both CVI and PIP SiC/SiC composites of Type S fiber had higher thermal conductivity than those of Hi-Nicalon fiber. These results can be ascribed to higher thermal conductivity of Type S fiber. The thermal conductivity of the 3D PIP SiC/SiC composites was increased after annealing at 1400°C in vacuum. The bend strength of the 2D CVI SiC/SiC composites of non-coated Hi-Nicalon fiber was higher than that of non-coated Type S fiber, indicating that interfacial modification for Type S fiber is needed to obtain good mechanical properties.

  14. Mechanical and thermal properties of 2D and 3D SiC/SiC composites

    International Nuclear Information System (INIS)

    Yamada, R.; Taguchi, T.; Igawa, N.

    2000-01-01

    SiC fiber-reinforced SiC composites (SiC/SiC), whose preforms had 3D satin weave or 2D non-woven fabric, were fabricated by chemical vapor infiltration (CVI) or polymer impregnation and pyrolysis (PIP). The 3D satin texture made from Hi-Nicalon Type S fiber was successfully woven although the fiber has high elastic modulus. Both CVI and PIP SiC/SiC composites of Type S fiber had higher thermal conductivity than those of Hi-Nicalon fiber. These results can be ascribed to higher thermal conductivity of Type S fiber. The thermal conductivity of the 3D PIP SiC/SiC composites was increased after annealing at 1400 deg. C in vacuum. The bend strength of the 2D CVI SiC/SiC composites of non-coated Hi-Nicalon fiber was higher than that of non-coated Type S fiber, indicating that interfacial modification for Type S fiber is needed to obtain good mechanical properties

  15. Improved resistive switching characteristics in Ni/SiNx/p++-Si devices by tuning x

    Science.gov (United States)

    Kim, Sungjun; Chang, Yao-Feng; Kim, Min-Hwi; Park, Byung-Gook

    2017-07-01

    This letter studies the effect of the negative-set on the resistive switching performances of CMOS-compatible Ni/SiNx/p++-Si resistive memory devices by simply tuning x. A Ni/SiN1.07/p++-Si device showed lower power switching (20 μW) and better endurance cycles (103) compared to a Ni/SiN0.82/p++-Si device because of the improved negative set behavior and initially lower set and reset currents. In addition, we achieved fast switching speed for set (200 ns) and reset (100 ns) processes in the Ni/SiN1.07/p++-Si device. For the Ni/SiN1.07/p++-Si device, fine adjustment of resistance values is attainable by varying the pulse amplitude and width due to the gradual reset switching characteristics. The barrier-height-dependent conduction model is proposed to explain the change in the current level with the x value.

  16. Tunable graphene doping by modulating the nanopore geometry on a SiO2/Si substrate

    KAUST Repository

    Lim, Namsoo

    2018-02-28

    A tunable graphene doping method utilizing a SiO2/Si substrate with nanopores (NP) was introduced. Laser interference lithography (LIL) using a He–Cd laser (λ = 325 nm) was used to prepare pore size- and pitch-controllable NP SiO2/Si substrates. Then, bottom-contact graphene field effect transistors (G-FETs) were fabricated on the NP SiO2/Si substrate to measure the transfer curves. The graphene transferred onto the NP SiO2/Si substrate showed relatively n-doped behavior compared to the graphene transferred onto a flat SiO2/Si substrate, as evidenced by the blue-shift of the 2D peak position (∼2700 cm−1) in the Raman spectra due to contact doping. As the porosity increased within the substrate, the Dirac voltage shifted to a more positive or negative value, depending on the initial doping type (p- or n-type, respectively) of the contact doping. The Dirac voltage shifts with porosity were ascribed mainly to the compensation for the reduced capacitance owing to the SiO2–air hetero-structured dielectric layer within the periodically aligned nanopores capped by the suspended graphene (electrostatic doping). The hysteresis (Dirac voltage difference during the forward and backward scans) was reduced when utilizing an NP SiO2/Si substrate with smaller pores and/or a low porosity because fewer H2O or O2 molecules could be trapped inside the smaller pores.

  17. Effects on selective epitaxial growth of strained-SiGe p-MOSFETs on various (001) Si recess structures

    Science.gov (United States)

    Hong, Min-Hao; Perng, Dung-Ching

    2017-12-01

    Influences of source and drain recess structures on SiGe epitaxy growth, SiGe step height, facet formation, I D,sat and resistance performance are investigated. Growth rate of SiGe height increases with decreased recess width at a fixed depth of 62 nm. Under a fixed recess width of 96.3 nm, the deeper the recess, the higher the growth rate of SiGe height. An increase in the depth/width ratio of the recessed Si geometry may promote SiGe {001} growth. Upon the recess, SiGe step height is influenced by the initial SiGe orientation. A longer {001} facet of SiGe initial orientation causes a higher growth rate of SiGe step height. Higher IDsat and lower resistance can be achieved by increasing SiGe volume with wider recess width, deeper recess depth, and higher SiGe step height.

  18. High temperature properties of CrAlN, CrAlSiN and AlCrSiN coatings - Structure and oxidation

    International Nuclear Information System (INIS)

    Polcar, Tomas; Cavaleiro, Albano

    2011-01-01

    Highlights: → Deposition and structural analysis of CrAln, CrAlSiN and AlCrSiN coatings. → In-situ XRD analysis at high temperature. → AlCrSiN coating showed the highest oxidation resistance and thermal stability. → CrAlN outperformed CrAlSiN film both in oxidation resistance and thermal stability. - Abstract: CrAlN, CrAlSiN and AlCrSiN coatings were deposited by cathodic arc deposition technique from composite targets. Three targets were used: (i) Cr/Al ratio close to 1, (ii) Cr/Al ratio close to 1 with Si addition, and (iii) Cr/Al ratio close to 1/2 and Si addition. Nitrogen flow was kept constant during the depositions. The Cr/Al ratio of the films, measured by electron probe microanalysis (EPMA), was similar to that of the target and the silicon content was in the range 3-4 at.%. The coatings were deposited onto FeCrAl alloy and WC/Co mirror-polished substrates. To analyze the coating structure, X-ray photoelectron (XPS) and X-ray diffraction (XRD) analysis were used. The evolution of the coating structure up to 1000 deg. C was in situ measured in a XRD apparatus equipped with heating plate. The films oxidation behavior was characterized by thermogravimetric analysis (TGA) at two selected temperatures. The annealed coatings were analyzed by XRD and scanning electron microscopy with energy-dispersive X-ray spectroscopy (EDX). CrAlSiN showed low oxidation resistance being partially oxidized at 800 deg. C. Moreover, the film exhibited low thermal stability, since the cubic nitride phases transformed to hexagonal nitrides at relatively low temperatures. CrAlN oxidation behavior was more promising; nevertheless, AlCrSiN showed excellent thermal stability with cubic nitrides observed even after heating to 1300 deg. C. The oxidation of this film at 900 and 1000 deg. C was negligible.

  19. High temperature properties of CrAlN, CrAlSiN and AlCrSiN coatings - Structure and oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Polcar, Tomas, E-mail: polcar@fel.cvut.cz [Department of Control Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague, Technicka 2, Prague 6 (Czech Republic); SEG-CEMUC - Department of Mechanical Engineering, University of Coimbra, Rua Luis Reis Santos, P-3030 788 Coimbra (Portugal); Cavaleiro, Albano [SEG-CEMUC - Department of Mechanical Engineering, University of Coimbra, Rua Luis Reis Santos, P-3030 788 Coimbra (Portugal)

    2011-09-15

    Highlights: {yields} Deposition and structural analysis of CrAln, CrAlSiN and AlCrSiN coatings. {yields} In-situ XRD analysis at high temperature. {yields} AlCrSiN coating showed the highest oxidation resistance and thermal stability. {yields} CrAlN outperformed CrAlSiN film both in oxidation resistance and thermal stability. - Abstract: CrAlN, CrAlSiN and AlCrSiN coatings were deposited by cathodic arc deposition technique from composite targets. Three targets were used: (i) Cr/Al ratio close to 1, (ii) Cr/Al ratio close to 1 with Si addition, and (iii) Cr/Al ratio close to 1/2 and Si addition. Nitrogen flow was kept constant during the depositions. The Cr/Al ratio of the films, measured by electron probe microanalysis (EPMA), was similar to that of the target and the silicon content was in the range 3-4 at.%. The coatings were deposited onto FeCrAl alloy and WC/Co mirror-polished substrates. To analyze the coating structure, X-ray photoelectron (XPS) and X-ray diffraction (XRD) analysis were used. The evolution of the coating structure up to 1000 deg. C was in situ measured in a XRD apparatus equipped with heating plate. The films oxidation behavior was characterized by thermogravimetric analysis (TGA) at two selected temperatures. The annealed coatings were analyzed by XRD and scanning electron microscopy with energy-dispersive X-ray spectroscopy (EDX). CrAlSiN showed low oxidation resistance being partially oxidized at 800 deg. C. Moreover, the film exhibited low thermal stability, since the cubic nitride phases transformed to hexagonal nitrides at relatively low temperatures. CrAlN oxidation behavior was more promising; nevertheless, AlCrSiN showed excellent thermal stability with cubic nitrides observed even after heating to 1300 deg. C. The oxidation of this film at 900 and 1000 deg. C was negligible.

  20. Removal of C and SiC from Si and FeSi during ladle refining and solidification

    Energy Technology Data Exchange (ETDEWEB)

    Klevan, Ole Svein

    1997-12-31

    The utilization of solar energy by means of solar cells requires the Si to be very pure. The purity of Si is important for other applications as well. This thesis mainly studies the total removal of carbon from silicon and ferrosilicon. The decarburization includes removal of SiC particles by stirring and during casting in addition to reduction of dissolved carbon by gas purging. It was found that for three commercial qualities of FeSi75, Refined, Gransil, and Standard lumpy, the refined quality is lowest in carbon, followed by Gransil and Standard. A decarburization model was developed that shows the carbon removal by oxidation of dissolved carbon to be a slow process at atmospheric pressure. Gas stirring experiments have shown that silicon carbide particles are removed by transfer to the ladle wall. The casting method of ferrosilicon has a strong influence on the final total carbon content in the commercial alloy. Shipped refined FeSi contains about 100 ppm total carbon, while the molten alloy contains roughly 200 ppm. The total carbon out of the FeSi-furnace is about 1000 ppm. It is suggested that low values of carbon could be obtained on an industrial scale by injection of silica combined with the use of vacuum. Also, the casting system could be designed to give low carbon in part of the product. 122 refs., 50 figs., 24 tabs.

  1. Molecular Structures of Al/Si and Fe/Si Coprecipitates and the Implication for Selenite Removal

    OpenAIRE

    Chan, Ya-Ting; Kuan, Wen-Hui; Tzou, Yu-Min; Chen, Tsan-Yao; Liu, Yu-Ting; Wang, Ming-Kuang; Teah, Heng-Yi

    2016-01-01

    Aluminum and iron oxides have been often used in the coagulation processes during water purification due to their unique surface properties toward anions. In the presence of silica, the coprecipitation of Al/Si or Fe/Si might decrease the efficiency of wastewater purification and reuse. In this study, surface properties and molecular structures of Al/Si and Fe/Si coprecipitates were characterized using spectroscopic techniques. Also, the selenite removal efficiency of Al/Si and Fe/Si coprecip...

  2. A New Ordered Si/SiO2 phase: Infrared Spectroscopy Analysis and Modeling

    Science.gov (United States)

    Bradley, J.; Herbots, N.; Shaw, J.; Atluri, V.; Queeney, K. T.; Chabal, Y. J.

    2003-10-01

    A new ordered Si/SiO2 phase is grown by conventional oxidation on ordered, OH-terminated (1x1)Si(100) surfaces formed at room temperature in ambient using a wet chemical cleaning method [1, 2] combined with conventional oxidation. Si atoms within 1-2.5 nm thick SiO2 are found to be in registry with respect to Si atoms in the Si(100). The degree of ordering is characterized by combining ion channeling with nuclear resonance analysis, as well as Reflective High Energy Electron Diffraction (RHEED), and High Resolution Transmission Electron Microscopy (HRTRM) and is found to be confined to a 2nm region in the SiO2[1]. Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) and Elastic Recoil Deflection (ERD) were used to profile silicon, oxygen, carbon, and hydrogen coverage within the ordered interphase. Most recently, infrared spectroscopy [2] was employed to investigate the bonding at the ordered Si/SiO2 interface and compare the suboxides region to conventional thermal oxides. Infrared spectroscopy shows that the TO red-shift due to SiOx cross-bonding at the Si/SiO2 interface is 50 % smaller and occurs more abruptly than in conventional thermal oxides. This indicates a more homogeneous bonding environment between Si and SiO2, which is consistent with the presence of an ordered phase. Using these results, we are modeling the structure of the 2 nm interphase with 3DSTRING [3]. This Monte Carlo Simulation enables us to compare the channeling spectra with the experimental data for the possible phase configuration in ordered SiOx on Si. [1] N. Herbots, V. Atluri, J. D. Bradley, J. Xiang, S. Banerjee, Q.Hurst, US Patent #6,613,677, Granted 9/2/2003 [2] N. Herbots, J. M. Shaw, Q. B. Hurst, M. P. Grams, R. J. Culbertson, D. J. Smith, V. Atluri, P. Zimmerman, and K. T. Queeney, Mat. Sci. Eng. B B87, 303-316 (2001). [3] K. T. Queeney, N. Herbots, Justin, M. Shaw, V. Atluri, Y. J. Chabal (to be published)

  3. SI Units? A Camel is a Camel.

    Science.gov (United States)

    Adamson, Arthur W.

    1978-01-01

    This paper is a summary of remarks made at a recent symposium on new directions in the teaching of physical chemistry. The author takes exception to the claims made for the International System of Units (SI). (HM)

  4. Mass and QEC value of 26Si

    International Nuclear Information System (INIS)

    Eronen, T.; Elomaa, V.-V.; Hager, U.; Hakala, J.; Jokinen, A.; Kankainen, A.; Kessler, T.; Moore, I. D.; Rahaman, S.; Rissanen, J.; Weber, C.; Aeystoe, J.

    2009-01-01

    The Q EC value of the superallowed β emitter 26 Si has been measured with the JYFLTRAP Penning trap facility to be 4840.85(10) keV which is ten times more precise than any previous measurement. This leaves only the branching ratio to be improved before the Ft value of 26 Si can be used to test the conserved vector current hypothesis. As a consequence, the 25 Al(p,γ) 26 Si reaction Q-value (Q pγ ) was improved to be 5513.7(5) keV, limited now by the mass excess of 25 Al. The new Q pγ value changes the stellar production rate of 26 Si in nova ignition temperatures by about 10%

  5. SiC MEMS For Harsh Environments

    National Research Council Canada - National Science Library

    Bradley, Kenneth

    2003-01-01

    ... (specifically high temperature) material for both structural and electronic devices. Although shock testing of SiC MEMS devices under this program was not accomplished, subsequent work allowed for this testing to occur, with positive results...

  6. RBS characterization of the deposition of very thin SiGe/SiO2 multilayers by LPCVD

    International Nuclear Information System (INIS)

    Munoz-Martin, A.; Climent-Font, A.; Rodriguez, A.; Sangrador, J.; Rodriguez, T.

    2005-01-01

    Multilayer structures consisting of several alternated layers of SiGe and SiO 2 with thickness ranging from 2 or Si as well as the deposition of SiO 2 on Si show negligible incubation times. The deposition of SiO 2 on SiGe, however, exhibits an incubation time of several minutes, which would be related to the oxidation of the surface necessary for the SiO 2 deposition to start. In all cases the film thickness increases linearly with deposition time, thus allowing the growth rates to be determined. These data allow the deposition process of these very thin layers to be accurately controlled

  7. Structure and chemistry of passivated SiC/SiO{sub 2} interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Houston Dycus, J.; Xu, Weizong; LeBeau, James M. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907 (United States); Lichtenwalner, Daniel J.; Hull, Brett; Palmour, John W. [Power Devices R& D, Wolfspeed, A Cree Company, Research Triangle Park, North Carolina 27709 (United States)

    2016-05-16

    Here, we report on the chemistry and structure of 4H-SiC/SiO{sub 2} interfaces passivated either by nitric oxide annealing or Ba deposition. Using aberration corrected scanning transmission electron microscopy and spectroscopy, we find that Ba and N remain localized at SiC/SiO{sub 2} interface after processing. Further, we find that the passivating species can introduce significant changes to the near-interface atomic structure of SiC. Specifically, we quantify significant strain for nitric oxide annealed sample where Si dangling bonds are capped by N. In contrast, strain is not observed at the interface of the Ba treated samples. Finally, we place these results in the context of field effect mobility.

  8. SiC/Si{sub 3}N{sub 4} nanotubes from peanut shells

    Energy Technology Data Exchange (ETDEWEB)

    Qadri, S. B.; Rath, B. B.; Gorzkowski, E. P.; Feng, C.R. [Materials Science and Component Technology Directorate, Naval Research Laboratory, Washington D.C., 20375 (United States)

    2016-06-15

    Nanotubes and nanoparticles of SiC and Si{sub 3}N{sub 4} were produced from the thermal treatment of peanut shells in argon and nitrogen atmospheres respectively, at temperatures in excess of 1350°C. Using x-ray diffraction, Raman spectroscopy and transmission electron microscopy analysis, the processed samples in argon atmosphere were shown to consist of 2H and 3C polytypes of SiC nanoparticles and nanotubes. Whereas the samples prepared in nitrogen atmosphere consisted of α-phase of Si{sub 3}N{sub 4}. Nanostructures formed by a single direct reaction provide a sustainable synthesis route for nanostructured SiC and Si{sub 3}N{sub 4}, for potential engineering applications due to their exceptional mechanical and electro-optic properties.

  9. Organosilicon Radicals with Si-H and Si-Me Bonds from Commodity Precursors.

    Science.gov (United States)

    Kundu, Subrata; Samuel, Prinson P; Sinhababu, Soumen; Luebben, Anna V; Dittrich, Birger; Andrada, Diego M; Frenking, Gernot; Stückl, A Claudia; Schwederski, Brigitte; Paretzki, Alexa; Kaim, Wolfgang; Roesky, Herbert W

    2017-08-16

    The cyclic alkyl(amino) carbene (cAAC) stabilized biradicals of composition (cAAC) 2 SiH 2 (1), (cAAC)SiMe 2 -SiMe 2 (cAAC) (2), and (cAAC)SiMeCl-SiMeCl(cAAC) (3) have been isolated as molecular species. All the compounds are stable at room temperature for more than 6 months under inert conditions in the solid state. All radical species were fully characterized by single-crystal X-ray structure analysis and EPR spectroscopy. Furthermore, the structure and bonding of compounds 1-3 have been investigated by theoretical methods. Compound 1 contains the SiH 2 moiety and this is the first instance, where we have isolated 1 without an acceptor molecule.

  10. Si/SiC heterojunction optically controlled transistor with charge compensation layer

    Directory of Open Access Journals (Sweden)

    Pu Hongbin

    2016-01-01

    Full Text Available A novel n-SiC/p-Si/n-Si optically controlled transistor with charge compensation layer has been studied in the paper. The performance of the device is simulated using Silvaco Atlas tools, which indicates excellent performances of the device in both blocking state and conducting state. The device also has a good switching characteristic with 0.54μs as rising time and 0.66μs as falling time. With the charge compensation layer, the breakdown voltage and the spectral response intensity of the device are improved by 90V and 33A/W respectively. Compared with optically controlled transistor without charge compensation layer, the n-SiC/p-Si/n-Si optically controlled transistor with charge compensation layer has a better performance.

  11. The Effect of Si Morphology on Machinability of Al-Si Alloys

    Directory of Open Access Journals (Sweden)

    Muhammet Uludağ

    2015-12-01

    Full Text Available Many of the cast parts require some sort of machining like milling, drilling to be used as a finished product. In order to improve the wear properties of Al alloys, Si is added. The solubility of Si in Al is quite low and it has a crystallite type structure. It behaves as particulate metal matrix composite which makes it an attractive element. Thus, the wear and machinability properties of these type of alloys depend on the morphology of Si in the matrix. In this work, Sr was added to alter the morphology of Si in Al-7Si and Al-12Si. Cylindrical shaped samples were cast and machinability characteristics of Sr addition was studied. The relationship between microstructure and machinability was evaluated.

  12. RBS using {sup 28}Si beams

    Energy Technology Data Exchange (ETDEWEB)

    Ophel, T.R. [Australian National Univ., Canberra, ACT (Australia); Mitchell, I.V. [University of Western Ontario, London, ON (Canada). Dept. of Physics

    1996-12-31

    Measurements of RBS using {sup 28}Si beams have been made to evaluate the enhancement of sensitivity that should obtain from kinematic suppression of silicon substrate scattering. Two detection methods were tried. Aside from a surface barrier detector, a magnetic spectrometer, instrumented with a multi-electrode gas focal plane detector, was used to indicate the resolution attainable with low energy {sup 28}Si ions. The results confirm that kinematically suppressed RBS does provide greatly improved sensitivity. 5 refs., 2 figs.

  13. Silicon Photonics Cloud (SiCloud)

    DEFF Research Database (Denmark)

    DeVore, P. T. S.; Jiang, Y.; Lynch, M.

    2015-01-01

    Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths.......Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths....

  14. On the structure of Si(100) surface

    DEFF Research Database (Denmark)

    Back, Seoin; Schmidt, Johan Albrecht; Ji, Hyunjun

    2013-01-01

    We revisit a dangling theoretical question of whether the surface reconstruction of the Si(100) surface would energetically favor the symmetric or buckled dimers on the intrinsic potential energy surfaces at 0 K. This seemingly simple question is still unanswered definitively since all existing...... of the electron-electron correlation as well as proper multireference wave functions when exploring the extremely delicate potential energy surfaces of the reconstructed Si(100) surface. (C) 2013 AIP Publishing LLC....

  15. Temperature-dependent 29Si incorporation during deposition of highly enriched 28Si films

    Science.gov (United States)

    Dwyer, K. J.; Kim, H. S.; Simons, D. S.; Pomeroy, J. M.

    2017-11-01

    In this study, we examine the mechanisms leading to 29Si incorporation into highly enriched 28Si films deposited by hyperthermal ion beams at elevated temperatures in the dilute presence of natural abundance silane (SiH4) gas. Enriched 28Si is a critical material in the development of quantum information devices because 28Si is free of nuclear spins that cause decoherence in a quantum system. We deposit epitaxial thin films of 28Si enriched in situ beyond 99.999 98% 28Si onto Si(100) using an ion-beam deposition system and seek to develop the ability to systematically vary the enrichment and measure the impact on quantum coherence. We use secondary ion mass spectrometry to measure the residual 29Si isotope fraction in enriched samples deposited from ≈250 ∘C up to 800 °C. The 29Si isotope fraction is found to increase from 4 ×10-6 at around 800 °C. From these data, we estimate the temperature dependence of the incorporation fraction s of SiH4, which increases sharply from about 2.9 ×10-4 at 500 °C to 2.3 ×10-2 at 800 °C. We determine an activation energy of 1.00(8) eV associated with the abrupt increase in incorporation and conclude that below 500 °C, a temperature-independent mechanism such as activation from ion collisions with adsorbed SiH4 molecules is the primary incorporation mechanism. Direct incorporation from the adsorbed state is found to be minimal.

  16. Si nanoparticle-decorated Si nanowire networks for Li-ion battery anodes

    KAUST Repository

    Hu, Liangbing

    2011-01-01

    We designed and fabricated binder-free, 3D porous silicon nanostructures for Li-ion battery anodes, where Si nanoparticles electrically contact current collectors via vertically grown silicon nanowires. When compared with a Si nanowire anode, the areal capacity was increased by a factor of 4 without having to use long, high temperature steps under vacuum that vapour-liquid-solid Si nanowire growth entails. © 2011 The Royal Society of Chemistry.

  17. Antioxidant migration resistance of SiOx layer in SiOx/PLA coated film.

    Science.gov (United States)

    Huang, Chongxing; Zhao, Yuan; Su, Hongxia; Bei, Ronghua

    2018-02-01

    As novel materials for food contact packaging, inorganic silicon oxide (SiO x ) films are high barrier property materials that have been developed rapidly and have attracted the attention of many manufacturers. For the safe use of SiO x films for food packaging it is vital to study the interaction between SiO x layers and food contaminants, as well as the function of a SiO x barrier layer in antioxidant migration resistance. In this study, we deposited a SiO x layer on polylactic acid (PLA)-based films to prepare SiO x /PLA coated films by plasma-enhanced chemical vapour deposition. Additionally, we compared PLA-based films and SiO x /PLA coated films in terms of the migration of different antioxidants (e.g. t-butylhydroquinone [TBHQ], butylated hydroxyanisole [BHA], and butylated hydroxytoluene [BHT]) via specific migration experiments and then investigated the effects of a SiO x layer on antioxidant migration under different conditions. The results indicate that antioxidant migration from SiO x /PLA coated films is similar to that for PLA-based films: with increase of temperature, decrease of food simulant polarity, and increase of single-sided contact time, the antioxidant migration rate and amount in SiO x /PLA coated films increase. The SiO x barrier layer significantly reduced the amount of migration of antioxidants with small and similar molecular weights and similar physical and chemical properties, while the degree of migration blocking was not significantly different among the studied antioxidants. However, the migration was affected by temperature and food simulant. Depending on the food simulants considered, the migration amount in SiO x /PLA coated films was reduced compared with that in PLA-based films by 42-46%, 44-47%, and 44-46% for TBHQ, BHA, and BHT, respectively.

  18. Fabrication of n-type Si nanostructures by direct nanoimprinting with liquid-Si ink

    Science.gov (United States)

    Takagishi, Hideyuki; Masuda, Takashi; Yamazaki, Ken; Shimoda, Tatsuya

    2018-01-01

    Nanostructures of n-type amorphous silicon (a-Si) and polycrystalline silicon (poly-Si) with a height of 270 nm and line widths of 110-165 nm were fabricated directly onto a substrate through a simple imprinting process that does not require vacuum conditions or photolithography. The n-type Liquid-Si ink was synthesized via photopolymerization of cyclopentasilane (Si5H10) and white phosphorus (P4). By raising the temperature from 160 °C to 200 °C during the nanoimprinting process, well-defined angular patterns were fabricated without any cracking, peeling, or deflections. After the nanoimprinting process, a-Si was produced by heating the nanostructures at 400°C-700 °C, and poly-Si was produced by heating at 800 °C. The dopant P diffuses uniformly in the Si films, and its concentration can be controlled by varying the concentration of P4 in the ink. The specific resistance of the n-type poly-Si pattern was 7.0 × 10-3Ω ṡ cm, which is comparable to the specific resistance of flat n-type poly-Si films.

  19. One-dimensional Si-in-Si(001) template for single-atom wire growth

    Science.gov (United States)

    Owen, J. H. G.; Bianco, F.; Köster, S. A.; Mazur, D.; Bowler, D. R.; Renner, Ch.

    2010-08-01

    Single atom metallic wires of arbitrary length are of immense technological and scientific interest. We present atomic-resolution scanning tunneling microscope data of a silicon-only template, which modeling predicts to enable the self-organized growth of isolated micrometer long surface and subsurface single-atom chains. It consists of a one-dimensional, defect-free Si reconstruction four dimers wide—the Haiku core—formed by hydrogenation of self-assembled Bi-nanolines on Si(001) terraces, independent of any step edges. We discuss the potential of this Si-in-Si template as an appealing alternative to vicinal surfaces for nanoscale patterning.

  20. Response of SiC/SiC to Transient Thermal Conditions: A Review

    International Nuclear Information System (INIS)

    Jones, Russell H.

    2001-01-01

    The database on thermal shock behavior of SiC/SiC composites is very limited. The existing data suggests continuous fiber ceramic matrix composites, such as SiC/SiC, exhibit very good thermal shock characteristics but most data was obtained for -Delta T conditions as a result of quenching from an elevated temperature. Thermal shock in a fusion energy system will result from plasma discharge and will result in a +Delta T. One study was reported for SiC/SiC composites given a +Delta T with no loss in strength following 25 cycles at a heating rate of 1700 degrees C/s. Monolithic SiC failed in 1.5 cycles at a heating rate of 1400 degrees C/s. Thermal fatigue test results also suggest that SiC/SiC composites will exhibit little or no degradation for 100's of cycles. It was estimated that radiation could, in an extreme case, cause a reduction in the thermal shock performance from a calculated Delta Tc of 957K to about 300K if the fiber strength is reduced by 50%. Newer composites with greater radiation resistance should have a much smaller change in the Delta Tc.

  1. Enhanced photoluminescence by resonant absorption in Er-doped SiO2/Si microcavities

    Science.gov (United States)

    Schubert, E. F.; Hunt, N. E. J.; Vredenberg, A. M.; Harris, T. D.; Poate, J. M.; Jacobson, D. C.; Wong, Y. H.; Zydzik, G. J.

    1993-11-01

    Si/SiO2 Fabry-Perot microcavities with an Er-implanted SiO2 active region resonant at the Er excitation wavelength of 980 nm have been realized. Room-temperature photoluminescence measurements reveal that the Er luminescence intensity increases by a factor of 28 as compared to a structure without cavity enhancement. We show that the experimental enhancement of the luminescence intensity agrees with theory if optical absorption of the 980 nm light in the Si layers of the cavity and reduced mirror reflectivities are taken into account.

  2. SiNx layers on nanostructured Si solar cells: Effective for optical absorption and carrier collection

    International Nuclear Information System (INIS)

    Cho, Yunae; Kim, Eunah; Gwon, Minji; Kim, Dong-Wook; Park, Hyeong-Ho; Kim, Joondong

    2015-01-01

    We compared nanopatterned Si solar cells with and without SiN x layers. The SiN x layer coating significantly improved the internal quantum efficiency of the nanopatterned cells at long wavelengths as well as short wavelengths, whereas the surface passivation helped carrier collection of flat cells mainly at short wavelengths. The surface nanostructured array enhanced the optical absorption and also concentrated incoming light near the surface in broad wavelength range. Resulting high density of the photo-excited carriers near the surface could lead to significant recombination loss and the SiN x layer played a crucial role in the improved carrier collection of the nanostructured solar cells

  3. SiCGe/SiC heterojunction and its MEDICI simulation of optoelectronic characteristics

    Science.gov (United States)

    Lü, Zheng; Chen, Zhi-Ming; Pu, Hong-Bin

    2005-06-01

    Optoelectronic characteristics of the SiC1-xGex /SiC heterojunction photodiode are simulated using MEDICI after the theoretical investigation of key properties for SiC1-xGex. The calculations show that SiC1-xGex /SiC with x=0.3 may have a small lattice mismatch with 3C-SiC and a good response to the visible light and the near infrared light. The response spectrum of the SiC1-xGex /SiC heterojunction photodiode, which consists of a p-type SiC1-xGex absorption layer with a doping concentration of 1×1015cm-3, a thickness of 1.6μm and x=0.3, has a peak of 250mA/W at 0.52μm and the peak can even reach 102mA/W at 0.7μm.

  4. Specimen size effect considerations for irradiation studies of SiC/SiC

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Henager, C.H. Jr.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States)

    1996-10-01

    For characterization of the irradiation performance of SiC/SiC, limited available irradiation volume generally dictates that tests be conducted on a small number of relatively small specimens. Flexure testing of two groups of bars with different sizes cut from the same SiC/SiC plate suggested the following lower limits for flexure specimen number and size: Six samples at a minimum for each condition and a minimum bar size of 30 x 6.0 x 2.0 mm{sup 3}.

  5. Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix

    International Nuclear Information System (INIS)

    Talochkin, A. B.; Chistokhin, I. B.

    2011-01-01

    Longitudinal photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots grown pseudomorphically to the Si matrix are studied. Lines of optical transitions between hole levels of quantum dots and Si electronic states are observed. This allowed us to construct a detailed energy-level diagram of electron-hole levels of the structure. It is shown that hole levels of pseudomorphic Ge quantum dots are well described by the simplest “quantum box” model using actual sizes of Ge islands. The possibility of controlling the position of the long-wavelength photosensitivity edge by varying the growth parameters of Si/Ge structures with Ge quantum dots is determined.

  6. MeV Si ion modifications on the thermoelectric generators from Si/Si + Ge superlattice nano-layered films

    Energy Technology Data Exchange (ETDEWEB)

    Budak, S., E-mail: satilmis.budak@aamu.edu [Department of Electrical Engineering and Computer Science, Alabama A and M University, Huntsville, AL (United States); Heidary, K. [Department of Electrical Engineering and Computer Science, Alabama A and M University, Huntsville, AL (United States); Johnson, R.B.; Colon, T. [Department of Physics, Alabama A and M University, Huntsville, AL (United States); Muntele, C. [Cygnus Scientific Services, Huntsville, AL (United States); Ila, D. [Department of Physics, Fayetteville St. University, Fayetteville, NC (United States)

    2014-08-15

    The performance of thermoelectric materials and devices is characterized by a dimensionless figure of merit, ZT = S{sup 2}σT/K, where, S and σ denote, respectively, the Seebeck coefficient and electrical conductivity, T is the absolute temperature in Kelvin and K represents the thermal conductivity. The figure of merit may be improved by means of raising either S or σ or by lowering K. In our laboratory, we have fabricated and characterized the performance of a large variety of thermoelectric generators (TEG). Two TEG groups comprised of 50 and 100 alternating layers of Si/Si + Ge multi-nanolayered superlattice films have been fabricated and thoroughly characterized. Ion beam assisted deposition (IBAD) was utilized to assemble the alternating sandwiched layers, resulting in total thickness of 300 nm and 317 nm for 50 and 100 layer devices, respectively. Rutherford Backscattering Spectroscopy (RBS) was employed in order to monitor the precise quantity of Si and Ge utilized in the construction of specific multilayer thin films. The material layers were subsequently impregnated with quantum dots and/or quantum clusters, in order to concurrently reduce the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and raise the cross plane electrical conductivity. The quantum dots/clusters were implanted via the 5 MeV Si ion bombardment which was performed using a Pelletron high energy ion beam accelerator. We have achieved remarkable results for the thermoelectric and optical properties of the Si/Si + Ge multilayer thin film TEG systems. We have demonstrated that with optimal setting of the 5 MeV Si ion beam bombardment fluences, one can fabricate TEG systems with figures of merits substantially higher than the values previously reported.

  7. MeV Si ion modifications on the thermoelectric generators from Si/Si + Ge superlattice nano-layered films

    Science.gov (United States)

    Budak, S.; Heidary, K.; Johnson, R. B.; Colon, T.; Muntele, C.; Ila, D.

    2014-08-01

    The performance of thermoelectric materials and devices is characterized by a dimensionless figure of merit, ZT = S2σT/K, where, S and σ denote, respectively, the Seebeck coefficient and electrical conductivity, T is the absolute temperature in Kelvin and K represents the thermal conductivity. The figure of merit may be improved by means of raising either S or σ or by lowering K. In our laboratory, we have fabricated and characterized the performance of a large variety of thermoelectric generators (TEG). Two TEG groups comprised of 50 and 100 alternating layers of Si/Si + Ge multi-nanolayered superlattice films have been fabricated and thoroughly characterized. Ion beam assisted deposition (IBAD) was utilized to assemble the alternating sandwiched layers, resulting in total thickness of 300 nm and 317 nm for 50 and 100 layer devices, respectively. Rutherford Backscattering Spectroscopy (RBS) was employed in order to monitor the precise quantity of Si and Ge utilized in the construction of specific multilayer thin films. The material layers were subsequently impregnated with quantum dots and/or quantum clusters, in order to concurrently reduce the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and raise the cross plane electrical conductivity. The quantum dots/clusters were implanted via the 5 MeV Si ion bombardment which was performed using a Pelletron high energy ion beam accelerator. We have achieved remarkable results for the thermoelectric and optical properties of the Si/Si + Ge multilayer thin film TEG systems. We have demonstrated that with optimal setting of the 5 MeV Si ion beam bombardment fluences, one can fabricate TEG systems with figures of merits substantially higher than the values previously reported.

  8. Residual stresses and mechanical properties of Si3N4/SiC multilayered composites with different SiC layers

    International Nuclear Information System (INIS)

    Liua, S.; Lia, Y.; Chena, P.; Lia, W.; Gaoa, S.; Zhang, B.; Yeb, F.

    2017-01-01

    The effect of residual stresses on the strength, toughness and work of fracture of Si3N4/SiC multilayered composites with different SiC layers has been investigated. It may be an effective way to design and optimize the mechanical properties of Si3N4/SiC multilayered composites by controlling the properties of SiC layers. Si3N4/SiC multilayered composites with different SiC layers were fabricated by aqueous tape casting and pressureless sintering. Residual stresses were calculated by using ANSYS simulation, the maximum values of tensile and compressive stresses were 553.2MPa and −552.1MPa, respectively. Step-like fracture was observed from the fracture surfaces. Fraction of delamination layers increased with the residual stress, which can improve the reliability of the materials. Tensile residual stress was benefit to improving toughness and work of fracture, but the strength of the composites decreased. [es

  9. Photoabsorption properties of {beta}-FeSi{sub 2} nanoislands grown on Si(111) and Si(001): Dependence on substrate orientation studied by nano-spectroscopic measurements

    Energy Technology Data Exchange (ETDEWEB)

    Naruse, Nobuyasu, E-mail: naruse@sanken.osaka-u.ac.jp [Institute of Scientific and Industrial Research (ISIR), Ibaraki, Osaka University, Osaka 567-0047 (Japan); Nakamura, Yoshiaki, E-mail: nakamura@ee.es.osaka-u.ac.jp [Graduate School of Engineering Science, Toyonaka, Osaka University, Osaka 560-8531 (Japan); Mera, Yutaka; Ichikawa, Masakazu; Maeda, Koji [Department of Applied Physics, School of Engineering, University of Tokyo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2011-10-03

    Photoabsorption properties of {beta}-FeSi{sub 2} nanoislands epitaxially grown on Si(111) and Si(001) have been discussed using photoabsorption nano-spectroscopy based on scanning tunneling microscope. The obtained spectra exhibit clear features around 0.86-0.91 eV and around 0.71-0.74 eV, which are explained as a direct and an indirect photoabsorption edge of {beta}-FeSi{sub 2}, respectively. We also observed a blue shift of spectrum obtained from {beta}-FeSi{sub 2} nanoislands on Si(111) substrates, compared to those on Si(001) substrates. We attributed the dependence on Si-substrate orientation not to a quantum confinement effect but to an effect of elastic strain in the {beta}-FeSi{sub 2} nanoislands epitaxially grown on the substrate.

  10. Crystallization mechanisms and recording characteristics of Si/CuSi bilayer for write-once blu-ray disc

    Energy Technology Data Exchange (ETDEWEB)

    Ou, Sin-Liang; Kuo, Po-Cheng; Tsai, Tsung-Lin [Departmant of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Chen, Sheng-Chi [Department of Materials Engineering and Center for Thin Film Technologies and Applications, Ming Chi University of Technology, Taipei 243, Taiwan (China); Yeh, Chin-Yen; Chang, Han-Feng [CMC Magnetics Corporation, Taoyuan 333, Taiwan (China); Lee, Chao-Te; Chiang, Donyau [Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu 300, Taiwan (China)

    2011-09-19

    The crystallization mechanisms of Si/CuSi bilayer and its recording characteristics for write-once blu-ray disc (BD-R) were investigated. It was found that Cu{sub 3}Si phase appeared during the room temperature sputtered deposition. Then, the Si atoms in CuSi layer segregated and crystallized to cubic Si in Cu{sub 3}Si nucleation sites as the film was annealed at 270 deg. C. After heating to 500 deg. C, the grains size of cubic Si phase grew and the hexagonal Si phase was observed. The dynamic tests show that the Si/CuSi bilayer has great feasibility for 1-4x BD-R with the bottom jitter values below 6.5%.

  11. Silicon electrodeposition from chloride-fluoride melts containing K2SiF6 and SiO2

    Directory of Open Access Journals (Sweden)

    Zhuk Sergey I.

    2017-01-01

    Full Text Available Silicon electrodeposition on glassy carbon from the KF-KCl-K2SiF6, KF-KCl-K2SiF6-KOH and KF-KCl-K2SiF6-SiO2 melts was studied by the cyclic voltammetry. Тhe electroreduction of Si(IV to metallic Si was observed as a single 4-electron wave under all considered conditions. The reactions of cathode reduction of silicon from fluoride and oxyfluoride complexes were suggested. It was shown that the process can be controlled by the preliminary transformation of SiO44- to SiF62- and SiOxFyz-. The influence of the current density on structure and morphology of silicon deposits obtained during galvanostatic electrolysis of the KF-KCl-K2SiF6-SiO2 melt was studied.

  12. Gibbs free energy of reactions involving SiC, Si3N4, H2, and H2O as a function of temperature and pressure

    Science.gov (United States)

    Isham, M. A.

    1992-01-01

    Silicon carbide and silicon nitride are considered for application as structural materials and coating in advanced propulsion systems including nuclear thermal. Three-dimensional Gibbs free energy were constructed for reactions involving these materials in H2 and H2/H2O. Free energy plots are functions of temperature and pressure. Calculations used the definition of Gibbs free energy where the spontaneity of reactions is calculated as a function of temperature and pressure. Silicon carbide decomposes to Si and CH4 in pure H2 and forms a SiO2 scale in a wet atmosphere. Silicon nitride remains stable under all conditions. There was no apparent difference in reaction thermodynamics between ideal and Van der Waals treatment of gaseous species.

  13. Eu-doped Si-SiO2 core-shell nanowires for Si-compatible red emission

    Science.gov (United States)

    Xu, Jinyou; Guo, Pengfei; Zou, Zhijun; Lu, Yang; Yan, Hailong; Luo, Yongsong

    2016-09-01

    The indirect bandgap of single-crystalline silicon has so far precluded the full integration of silicon microelectronics with photonics—which is expected to allow the realization of low-cost, high-speed optical information processing and communication in the future. Here we report the growth of europium (Eu)-doped Si-SiO2 core-shell nanowires by an oxide-assisted chemical vapor deposition method. The Eu concentration in these nanowires is effectively improved by intentionally increasing the thickness of SiO2 shells. As a result, a strong Si-compatible red emission from Eu3+ ions was observed under laser illumination. The effect of Eu3+ concentration on the emission efficiency was comprehensively studied, with the highest efficiency at Eu content about 0.8 at%. The relaxation mechanism of this concentration dependent luminescence was further explored through lifetime measurements. In light of the strong characteristic red emission and nanoscale footprint, these nanowires are promising Si-compatible light emission materials for future integrated nanophotonics.

  14. Comparative analysis of radiation effects on the electroluminescence of Si and SiGe/Si(001) heterostructures with self-assembled Islands

    Energy Technology Data Exchange (ETDEWEB)

    Krasilnik, Z. F.; Kudryavtsev, K. E. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Kachemtsev, A. N. [Sedakov Scientific-Research Institute (Russian Federation); Lobanov, D. N., E-mail: dima@ipm.sci-nnov.ru; Novikov, A. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Obolenskiy, S. V. [Nizhni Novgorod State University (Russian Federation); Shengurov, D. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2011-02-15

    The effect of neutron radiation on the electroluminescence of the Si p-i-n diode containing a multilayered Ge/Si heterostructure with self-assembled nanoislands is studied. In comparison with bulk Si, the diodes containing Ge(Si) nanoislands exhibit a higher radiation hardness of the electroluminescence signal, which is attributed to spatial localization of charge carriers in the Ge/Si nanostructures. The spatial localization of charge carriers impedes their diffusion to radiation defects followed by nonradiative recombination at the defects. The results show the possibilities of using Ge/Si heterostructures with self-assembled nanoislands for the development of optoelectronic devices resistant to radiation.

  15. Influence of Si contents on tribological characteristics of CrAlSiN nanocomposite coatings

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Chun-Chi; Chen, Hsien-Wei [Department of Material Science and Engineering, National Tsing-Hua University, Hsinchu, Taiwan (China); Lee, Jyh-Wei [Department of Materials Engineering, Ming Chi University of Technology, Taipei, Taiwan (China); Center for Thin Film Technologies and Applications, Mingchi University of Technology, Taipei, Taiwan (China); Duh, Jenq-Gong, E-mail: jgd@mx.nthu.edu.tw [Department of Material Science and Engineering, National Tsing-Hua University, Hsinchu, Taiwan (China)

    2015-06-01

    The CrAlSiN coatings with Si contents from 0 at.% to 13.0 at.% were deposited on AISI 304 stainless steels and tungsten carbide by RF magnetron sputtering. In the ball-on-disc wear tests, the improved friction coefficient of (Cr{sub 0.5}Al{sub 0.5}){sub 1−x}Si{sub x}N coatings with increasing Si content was revealed. The hardness (H) and the reduced elastic modulus (E{sup ⁎}) of (Cr{sub 0.5}Al{sub 0.5}){sub 1−x}Si{sub x}N coatings were acquired by a nanoindentation. The H{sup 3}/E{sup ⁎2} ratio of (Cr{sub 0.5}Al{sub 0.5}){sub 1−x}Si{sub x}N coatings was found be proportional to the abrasion resistance of coatings, and therefore the (Cr{sub 0.5}Al{sub 0.5}){sub 1−x}Si{sub x}N coating with maximum H{sup 3}/E{sup ⁎2} ratio as high as 0.475 by adding 9.0 at.% Si exhibited superior resistance to plastic deformation and wear. In addition, it was revealed that the columnar grains of the CrAlN coatings were switched to refined and equi-axial ones after Si addition. From the observation of crack propagation, it was evidenced that the equi-axial grains with sophisticated boundary of (Cr{sub 0.5}Al{sub 0.5}){sub 1−x}Si{sub x}N coating prevents the direct penetration of the cracks. On the basis of these improved tribological behaviors, the superior durability of (Cr{sub 0.5}Al{sub 0.5}){sub 1−x}Si{sub x}N coating is thus demonstrated. - Highlights: • The friction coefficient of CrAlSiN films decrease with increasing Si content. • The wear rate of CrAlSiN films is dependent on resistance to plastic deformation. • Si-induced amorphization is attributed to the absence of penetrated cracks.

  16. Mobility-limiting mechanisms in single and dual channel strained Si/SiGe MOSFETs

    International Nuclear Information System (INIS)

    Olsen, S.H.; Dobrosz, P.; Escobedo-Cousin, E.; Bull, S.J.; O'Neill, A.G.

    2005-01-01

    Dual channel strained Si/SiGe CMOS architectures currently receive great attention due to maximum performance benefits being predicted for both n- and p-channel MOSFETs. Epitaxial growth of a compressively strained SiGe layer followed by tensile strained Si can create a high mobility buried hole channel and a high mobility surface electron channel on a single relaxed SiGe virtual substrate. However, dual channel n-MOSFETs fabricated using a high thermal budget exhibit compromised mobility enhancements compared with single channel devices, in which both electron and hole channels form in strained Si. This paper investigates the mobility-limiting mechanisms of dual channel structures. The first evidence of increased interface roughness due to the introduction of compressively strained SiGe below the tensile strained Si channel is presented. Interface corrugations degrade electron mobility in the strained Si. Roughness measurements have been carried out using AFM and TEM. Filtering AFM images allowed roughness at wavelengths pertinent to carrier transport to be studied and the results are in agreement with electrical data. Furthermore, the first comparison of strain measurements in the surface channels of single and dual channel architectures is presented. Raman spectroscopy has been used to study channel strain both before and after processing and indicates that there is no impact of the buried SiGe layer on surface macrostrain. The results provide further evidence that the improved performance of the single channel devices fabricated using a high thermal budget arises from improved surface roughness and reduced Ge diffusion into the Si channel

  17. Controlling the optical properties of monocrystalline 3C-SiC heteroepitaxially grown on silicon at low temperatures

    Science.gov (United States)

    Colston, Gerard; Myronov, Maksym

    2017-11-01

    Cubic silicon carbide (3C-SiC) offers an alternative wide bandgap semiconductor to conventional materials such as hexagonal silicon carbide (4H-SiC) or gallium nitride (GaN) for the detection of UV light and can offer a closely lattice matched virtual substrate for subsequent GaN heteroepitaxy. As 3C-SiC can be heteroepitaxially grown on silicon (Si) substrates its optical properties can be manipulated by controlling the thickness and doping concentrations. The optical properties of 3C-SiC epilayers have been characterized by measuring the transmission of light through suspended membranes. Decreasing the thickness of the 3C-SiC epilayers is shown to shift the absorbance edge to lower wavelengths, a result of the indirect bandgap nature of silicon carbide. This property, among others, can be exploited to fabricate very low-cost, tuneable 3C-SiC based UV photodetectors. This study investigates the effect of thickness and doping concentration on the optical properties of 3C-SiC epilayers grown at low temperatures by a standard Si based growth process. The results demonstrate the potential photonic applications of 3C-SiC and its heterogeneous integration into the Si industry.

  18. Microstructural evolution of SiC/Cu-Si composites obtained through reactive infiltration; Evolucion microestructural de composites SiC/aleaciones CuSi obtenidos a traves de infiltracion ractiva

    Energy Technology Data Exchange (ETDEWEB)

    Cornejo, J.; Ordonez, S.; Iturriza, I.

    2010-07-01

    The microstructural evolution of composites of SiC/Cu-Si alloys obtained through process of reactive infiltration to 1400 degree centigrade was studied. Three zones were detected in the obtained composites: the reaction zone, the transition zone and the infiltrated zone. In the reaction zone and transition zone the resulting microstructure was composed of a metallic phase, graphite laminae and SiC particles. It was found that SiC decomposes into these areas because of the alloy Cu-Si, so the available Si forms a liquid solution that a room temperature consisted of a a solid solution and a {gamma} phase (Cu{sub 5}Si). The carbon resulting from the decomposition of SiC precipitated as graphite laminae. In addition, the SiC decomposition was decreasing as the initial amount of Si in the alloy increased. (Author) 37 refs.

  19. Spectroscopic and calorimetric investigation of short and intermediate-range structures and energetics of amorphous SiCO, SiCN, and SiBCN polymer-derived ceramics

    Science.gov (United States)

    Widgeon, Scarlett J.

    transport properties such as electrical conductivity and viscosity may show power-law dependence on composition near and above the percolation threshold of the SiOC network or that of the free-carbon phase. Si(B)CN PDCs with different carbon contents were synthesized by pyrolysis of poly(boro)silylcarbodiimides and poly(boro)silazane precursors and their structure and energetics were studied using multi-nuclear, one- and two- dimensional NMR spectroscopy and oxide melt solution calorimetry. The structure of the polysilylcarbodiimide-derived SiCN PDCs at lower carbon content and pyrolysis temperatures (800 oC) consists of amorphous nanodomains of sp2 carbon and silicon nitride with an interfacial bonding between N, C and Si atoms that is stabilized by the presence of hydrogen. The interfacial Si-C and N-C bonds are destroyed with concomitant hydrogen loss upon increasing the pyrolysis temperature to 1100 oC. Calorimetry results demonstrate that the mixed bonding in the interfacial regions play a key role in the thermodynamic stabilization of these PDCs. The size of the carbon domains increases with increasing carbon content until a continuous amorphous carbon matrix is formed with 55-60 wt % C. The polyborosilylcarbodiimide-derived SiBCN ceramics contain carbon and silicon nitride nanodomains with the BN domains being present predominantly at the interface. In contrast, the structure of the polyborosilazane-derived ceramics consists of significant amount of mixed bonding in the nearest-neighbor coordination environments of Si and B atoms leading to the formation of SiC xN4-x tetrahedral units and BCN2 triangular units. The interfacial region between the SiCN and C nanodomains is occupied by the BCN phase. These results demonstrate that the chemistry of the polymeric precursors exerts major influence on the microstructure and bonding in their derived ceramics.

  20. HREELS study of the adsorption and evolution of diethylamine (DEA) on Si(1 0 0) surfaces

    International Nuclear Information System (INIS)

    Yeninas, S.; Brickman, A.; Craig, J.H.; Lozano, J.

    2008-01-01

    The adsorption of diethylamine (DEA) on Si(1 0 0) at 100 K was investigated using high-resolution electron energy loss spectroscopy (HREELS) and electron stimulated desorption (ESD). The thermal evolution of DEA on Si(1 0 0) was studied using temperature programmed desorption (TPD). Our results demonstrate DEA bonds datively to the Si(1 0 0) surface with no dissociation at 100 K. Thermal desorption of DEA takes place via a β-hydride elimination process leaving virtually no carbon behind. Electronic processing of DEA/Si(1 0 0) at 100 K results in desorption of ethyl groups; however, carbon and nitrogen are deposited on the surface as a result of electron irradiation. Thermal removal of carbon and nitrogen was not possible, indicating the formation of silicon carbide and silicon nitride

  1. Transformation mechanism of n-butyl terminated Si nanoparticles embedded into Si1-xCx nanocomposites mixed with Si nanoparticles and C atoms

    International Nuclear Information System (INIS)

    Shin, J.W.; Oh, D.H.; Kim, T.W.; Cho, W.J.

    2009-01-01

    Bright-field transmission electron microscopy (TEM) images, high-resolution TEM (HRTEM) images, and fast-Fourier transformed electron-diffraction patterns showed that n-butyl terminated Si nanoparticles were aggregated. The formation of Si 1-x C x nanocomposites was mixed with Si nanoparticles and C atoms embedded in a SiO 2 layer due to the diffusion of C atoms from n-butyl termination shells into aggregated Si nanoparticles. Atomic force microscopy (AFM) images showed that the Si 1-x C x nanocomposites mixed with Si nanoparticles and C atoms existed in almost all regions of the SiO 2 layer. The formation mechanism of Si nanoparticles and the transformation mechanism of n-butyl terminated Si nanoparticles embedded into Si 1-x C x nanocomposites mixed with Si nanoparticles and C atoms are described on the basis of the TEM, HRTEM, and AFM results. These results can help to improve the understanding of the formation mechanism of Si nanoparticles.

  2. Porous nC-Si/SiOx nanostructured layer on Si substrate with tunable photoluminescent properties fabricated by direct, precursor-free microplasma irradiation in air

    Science.gov (United States)

    Wang, Tao; Hu, Mingshan; Yang, Bin; Wang, Xiaolin; Liu, Jingquan

    2018-03-01

    Porous nC-Si/SiOx photoluminescent nanostructured layer is fabricated by direct, precursor-free microplasma irradiation on Si substrate in air. It is confirmed that the deposited layer has porous and cluster-like structures by scanning electron microscopy (SEM) and profile scanning. Fourier transform infrared transmission (FTIR), X-ray diffraction (XRD) and X-ray photoelectron spectrum (XPS) results indicate the produced layer is actually composed of nanocrystalline silicon (nC-Si) embedded in SiOx matrix. Transmission electron microscopy (TEM) and Raman results show the mean particle size of nC-Si is mainly between 2 and 4 nm and the highest crystalline volume fraction reaches 86.9%. The photoluminescence (PL) measurement of nC-Si/SiOx layer exhibited a broad band centered at 1.7-1.9 eV, ranging from 1.2-2.4 eV, and could be tuned by varying the applied voltage. The synthetical mechanisms are discussed to explain the PL properties of the layers. We propose that the energetic ions bombing induced by high compressed electric field near the Si surface is the main reason for porous nC-Si/SiOx formation. Maskless deposition of the line pattern of nC-Si/SiOx layer was also successfully fabricated. This simple, maskless, vacuum-free and precursor-free technique could be used in various potential optoelectronics and biological applications in the future.

  3. Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells

    Science.gov (United States)

    Melnikov, M. Yu.; Dolgopolov, V. T.; Shashkin, A. A.; Huang, S.-H.; Liu, C. W.; Kravchenko, S. V.

    2017-12-01

    We find an unusual anisotropy of the inplane field magnetoresistance with higher resistance in the parallel orientation of the field, B∥ , and current, I, in ultra-high mobility SiGe/Si/SiGe quantum wells. The anisotropy depends on the orientation between the inplane field and the current relative to the crystallographic axes of the sample, and is a consequence of the ridges on the quantum well surface. For the parallel or perpendicular orientations between current and ridges, a method of converting the magnetoresistance measured at I ⊥B∥ into the one measured at I ∥B∥ is suggested and is shown to yield results that agree with the experiment.

  4. Application of high-quality SiO2 grown by multipolar ECR source to Si/SiGe MISFET

    Science.gov (United States)

    Sung, K. T.; Li, W. Q.; Li, S. H.; Pang, S. W.; Bhattacharya, P. K.

    1993-01-01

    A 5 nm-thick SiO2 gate was grown on an Si(p+)/Si(0.8)Ge(0.2) modulation-doped heterostructure at 26 C with an oxygen plasma generated by a multipolar electron cyclotron resonance source. The ultrathin oxide has breakdown field above 12 MV/cm and fixed charge density about 3 x 10 exp 10/sq cm. Leakage current as low as 1/micro-A was obtained with the gate biased at 4 V. The MISFET with 0.25 x 25 sq m gate shows maximum drain current of 41.6 mA/mm and peak transconductance of 21 mS/mm.

  5. Gate-stack engineering for self-organized Ge-dot/SiO2/SiGe-shell MOS capacitors

    Science.gov (United States)

    Lai, Wei-Ting; Yang, Kuo-Ching; Liao, Po-Hsiang; George, Tom; Li, Pei-Wen

    2016-02-01

    We report the first-of-its-kind, self-organized gate-stack heterostructure of Ge-dot/SiO2/SiGe-shell on Si fabricated in a single step through the selective oxidation of a SiGe nano-patterned pillar over a Si3N4 buffer layer on a Si substrate. Process-controlled tunability of the Ge-dot size (7.5-90 nm), the SiO2 thickness (3-4 nm), and as well the SiGe-shell thickness (2-15 nm) has been demonstrated, enabling a practically-achievable core building block for Ge-based metal-oxide-semiconductor (MOS) devices. Detailed morphologies, structural, and electrical interfacial properties of the SiO2/Ge-dot and SiO2/SiGe interfaces were assessed using transmission electron microscopy, energy dispersive x-ray spectroscopy, and temperature-dependent high/low-frequency capacitance-voltage measurements. Notably, NiGe/SiO2/SiGe and Al/SiO2/Ge-dot/SiO2/SiGe MOS capacitors exhibit low interface trap densities of as low as 3-5x10^11 cm^-2·eV^-1 and fixed charge densities of 1-5x10^11 cm^-2, suggesting good-quality SiO2/SiGe-shell and SiO2/Ge-dot interfaces. In addition, the advantage of having single-crystalline Si1-xGex shell (x > 0.5) in a compressive stress state in our self-aligned gate-stack heterostructure has great promise for possible SiGe (or Ge) MOS nanoelectronic and nanophotonic applications.

  6. Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: their impact on SiGe light emission

    Science.gov (United States)

    Lockwood, David; Wu, Xiaohua; Baribeau, Jean-Marc; Mala, Selina; Wang, Xialou; Tsybeskov, Leonid

    2016-03-01

    Fast optical interconnects together with an associated light emitter that are both compatible with conventional Si-based complementary metal-oxide- semiconductor (CMOS) integrated circuit technology is an unavoidable requirement for the next-generation microprocessors and computers. Self-assembled Si/Si1-xGex nanostructures, which can emit light at wavelengths within the important optical communication wavelength range of 1.3 - 1.55 μm, are already compatible with standard CMOS practices. However, the expected long carrier radiative lifetimes observed to date in Si and Si/Si1-xGex nanostructures have prevented the attainment of efficient light-emitting devices including the desired lasers. Thus, the engineering of Si/Si1-xGex heterostructures having a controlled composition and sharp interfaces is crucial for producing the requisite fast and efficient photoluminescence (PL) at energies in the range 0.8-0.9 eV. In this paper we assess how the nature of the interfaces between SiGe nanostructures and Si in heterostructures strongly affects carrier mobility and recombination for physical confinement in three dimensions (corresponding to the case of quantum dots), two dimensions (corresponding to quantum wires), and one dimension (corresponding to quantum wells). The interface sharpness is influenced by many factors such as growth conditions, strain, and thermal processing, which in practice can make it difficult to attain the ideal structures required. This is certainly the case for nanostructure confinement in one dimension. However, we demonstrate that axial Si/Ge nanowire (NW) heterojunctions (HJs) with a Si/Ge NW diameter in the range 50 - 120 nm produce a clear PL signal associated with band-to-band electron-hole recombination at the NW HJ that is attributed to a specific interfacial SiGe alloy composition. For three-dimensional confinement, the experiments outlined here show that two quite different Si1-xGex nanostructures incorporated into a Si0.6Ge0.4 wavy

  7. A sensitive optical sensor based on DNA-labelled Si@ SiO2 core ...

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 40; Issue 7. A sensitive optical sensor based on DNA-labelled Si@SiO 2 core–shell nanoparticle for the detection of Hg 2 + ions in environmental water samples. KRISHNAN SRINIVASAN KATHAVARAYAN SUBRAMANIAN ARULIAH RAJASEKAR KADARKARAI ...

  8. Si nanocrystals embedded in SiO2: Optical studies in the vacuum ultraviolet range

    DEFF Research Database (Denmark)

    Pankratov, V.; Osinniy, Viktor; Kotlov, A.

    2011-01-01

    Photoluminescence excitation and transmission spectra of Si nanocrystals of different diameters embedded in a SiO2 matrix have been investigated in the broad visible-vacuum ultraviolet spectral range using synchrotron radiation. The dependence of the photoluminescence excitation spectra...

  9. Preparation of Si3N4–SiC composites by microwave route

    Indian Academy of Sciences (India)

    Unknown

    Hirano et al 1996; Fukasawa and Goto 1998). When composited the creep resistance has also been reported to improve (Niihara et al 1990; Hirano et al 1996; Rendtel et al 1998; Yamada and Kamiya 1999). Possibilities of making engine components using Si3N4–SiC composites have been discussed in the literature.

  10. A Sensitive Optical Sensor Based on DNA Labeled Si@SiO 2 Core ...

    Indian Academy of Sciences (India)

    11

    dried before use. Milli-Q water was used for all experiments. 2. Apparatus. The fluorescence emission spectra were monitored after the introduction of metal ions into the test assay. The absorption properties of DNA labeled Si@SiO2 core shell nanoparticles with various concentrations of Hg2+ ions were characterized by ...

  11. Fluorescence enhancement of single DNA molecules confined in Si/SiO2 nanochannels

    DEFF Research Database (Denmark)

    Westerlund, F.; Persson, Karl Fredrik; Kristensen, Anders

    2010-01-01

    We demonstrate that the detected emission intensity from YOYO-labeled DNA molecules confined in 180 nm deep Si/SiO2 nano-funnels changes significantly and not monotonically with the width of the funnel. This effect may be of importance for quantitative fluorescence microscopy and for experiments...

  12. Atomic state and characterization of nitrogen at the SiC/SiO2 interface

    International Nuclear Information System (INIS)

    Xu, Y.; Garfunkel, E. L.; Zhu, X.; Lee, H. D.; Xu, C.; Shubeita, S. M.; Gustafsson, T.; Ahyi, A. C.; Sharma, Y.; Williams, J. R.; Lu, W.; Ceesay, S.; Tuttle, B. R.; Pantelides, S. T.; Wan, A.; Feldman, L. C.

    2014-01-01

    We report on the concentration, chemical bonding, and etching behavior of N at the SiC(0001)/SiO 2 interface using photoemission, ion scattering, and computational modeling. For standard NO processing of a SiC MOSFET, a sub-monolayer of nitrogen is found in a thin inter-layer between the substrate and the gate oxide (SiO 2 ). Photoemission shows one main nitrogen related core-level peak with two broad, higher energy satellites. Comparison to theory indicates that the main peak is assigned to nitrogen bound with three silicon neighbors, with second nearest neighbors including carbon, nitrogen, and oxygen atoms. Surprisingly, N remains at the surface after the oxide was completely etched by a buffered HF solution. This is in striking contrast to the behavior of Si(100) undergoing the same etching process. We conclude that N is bound directly to the substrate SiC, or incorporated within the first layers of SiC, as opposed to bonding within the oxide network. These observations provide insights into the chemistry and function of N as an interface passivating additive in SiC MOSFETs

  13. SiGe quantum dot molecules grown on patterned Si (001) substrates

    International Nuclear Information System (INIS)

    Yang Hongbin; Zhang Xiangjiu; Jiang Zuiming; Yang Xinju; Fan Yongliang

    2008-01-01

    SiGe quantum dot molecules (QDMs) grown on patterned Si (001) substrates by molecular beam epitaxy were studied. Experimental results showed that the density, the dimension, and the dimension distribution of the SiGe QDMs grown in the windows were dependent on the window size. When the thickness of the Si 0.8 Ge 0.2 film was 40 nm, QDMs only appeared in the unpatterned areas of the Si substrate and none could be found inside the windows of 6x6 μm 2 on the same substrate. However, when the thickness of Si 0.8 Ge 0.2 film was increased to 80 nm, QDMs appeared both inside the windows and in the unpatterned areas, and the density of QDMs was reduced with the decrease in the window size. We attribute these results to the different strain relaxations in different size windows, which are caused by the edge effect of the epitaxial film in the window. Based on these experimental results we discuss the formation and the size stability of the QDMs and conclude that the formation of the SiGe QDM originates from an intrinsic cause of the strain relief mechanism. This work also shows that by means of the edge induced strain relaxation of the epitaxial film in the window, it is possible to reveal the influence of the strain on some physical properties of the SiGe film without changing its Ge atomic fraction

  14. Effect of starting composition on formation of MoSi2–SiC ...

    Indian Academy of Sciences (India)

    533–538. c Indian Academy of Sciences. Effect of starting composition on formation of MoSi2–SiC nanocomposite powder via ball milling. M ZAKERI. ∗ and M AHMADI†. Ceramic Department, Materials and Energy Research Centre, P.O. Box 31787/316, Tehran, Iran. †Materials Science Department, Islamic Azad University ...

  15. Electron transport in n-doped Si/SiGe quantum cascade structures

    NARCIS (Netherlands)

    Lazic, I.; Ikonic, Z.; Milanovic, V.; Kelsall, R.W.; Indjin, D.; Harrison, P.

    2007-01-01

    An electron transport model in n-Si/SiGe quantum cascade or superlattice structures is described. The model uses the electronic structure calculated within the effective-mass complex-energy framework, separately for perpendicular (Xz) and in-plane (Xxy) valleys, the degeneracy of which is lifted by

  16. A sensitive optical sensor based on DNA-labelled Si@ SiO2 core ...

    Indian Academy of Sciences (India)

    The detection protocol was based on the DNA hybridization resulted from the formation of mercury-mediated (thymine–Hg 2 + –thymine) base pairs which leave a fluorescent QD on the surface of quartz glass. The synthesized Si@SiO 2 core–shell nanoparticle showed a broad emission peak with strong intensity in the UV ...

  17. C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures

    International Nuclear Information System (INIS)

    Onojima, Norio; Kasamatsu, Akihumi; Hirose, Nobumitsu; Mimura, Takashi; Matsui, Toshiaki

    2008-01-01

    Electrical properties of Schottky- and metal-insulator-semiconductor (MIS)-gate SiGe/Si high electron mobility transistors (HEMTs) were investigated with capacitance-voltage (C-V) measurements. The MIS-gate HEMT structure was fabricated using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN thin film (5 nm) was found to be an effective gate insulator with good gate controllability and dielectric properties. We previously investigated device characteristics of sub-100-nm-gate-length Schottky- and MIS-gate HEMTs, and reported that the MIS-gate device had larger maximum drain current density and transconductance (g m ) than the Schottky-gate device. The radio frequency (RF) measurement of the MIS-gate device, however, showed a relatively lower current gain cutoff frequency f T compared with that of the Schottky-gate device. In this study, C-V characterization of the MIS-gate HEMT structure demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel

  18. Spin-orbit coupling and magnetic interactions in Si(111):{C,Si,Sn,Pb}

    NARCIS (Netherlands)

    Badrtdinov, D.I.; Nikolaev, S.A.; Katsnelson, M.I.; Mazurenko, V.V.

    2016-01-01

    We study the magnetic properties of the adatom systems on a semiconductor surface Si(111):{C,Si,Sn,Pb}- root 3 x root 3). On the basis of all-electron density functional theory calculations we construct effective low-energy models taking into account spin-orbit coupling and electronic correlations.

  19. a-Si/SiN{sub x} multilayered light absorber for solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Panchal, A. K., E-mail: akp@eed.svnit.ac.in; Rai, D. K.; Mathew, Meril; Solanki, C. S. [Indian Institute of Technology Bombay, Department of Energy Science and Engineering (India)

    2011-06-15

    40 alternate a-Si/SiN{sub x} multilayer are incorporated as an absorber layer in a p-i-n solar cell. The device is fabricated using hot-wire chemical vapor deposition (HWCVD) technique. The structure of the multilayer film is examined by high resolution transmission electron microscopy (HR-TEM) which shows distinct formation of alternate a-Si and SiN{sub x} layers. The a-Si and SiN{sub x} layers have thickness of {approx}3.5 and 4 nm, respectively. The photoluminescence (PL) of multilayer film shows bandgap energy of {approx}2.52 eV, is larger than that of the c-Si and a-Si. Dark and illuminated current-voltage (I-V) characterization of the ML films shows that these ML are photosensitive. In the present work, it is seen that the p-i-n structure with i-layer as ML quantum well (QW) structures show photovoltaic effect with relatively high open-circuit voltage (V{sub OC}). The increment of bandgap energy in PL and high V{sub OC} of the device is attributed to the quantum confinement effect (QCE).

  20. Weld microstructure in cast AlSi9/SiC(p metal matrix composites

    Directory of Open Access Journals (Sweden)

    J. Wysocki

    2009-04-01

    Full Text Available Welded joint in cast AlSi9/SiC/20(p metal matrix composite by manual TIG arc welding using AlMg5 filler metal has been described inhis paper. Cooling curves have been stated, and the influence in distribution of reinforced particles on crystallization and weldmicrostructure. Welded joint mechanical properties have been determined: hardness and tensile.

  1. Fabrication and Characteristics of an nc-Si/c-Si Heterojunction MOSFETs Pressure Sensor

    Directory of Open Access Journals (Sweden)

    Xiaofeng Zhao

    2012-05-01

    Full Text Available A novel nc-Si/c-Si heterojunction MOSFETs pressure sensor is proposed in this paper, with four p-MOSFETs with nc-Si/c-Si heterojunction as source and drain. The four p-MOSFETs are designed and fabricated on a square silicon membrane by CMOS process and MEMS technology where channel resistances of the four nc-Si/c-Si heterojunction MOSFETs form a Wheatstone bridge. When the additional pressure is P, the nc-Si/c-Si heterojunction MOSFETs pressure sensor can measure this additional pressure P. The experimental results show that when the supply voltage is 3 V, length-width (L:W ratio is 2:1, and the silicon membrane thickness is 75 μm, the full scale output voltage of the pressure sensor is 15.50 mV at room temperature, and pressure sensitivity is 0.097 mV/kPa. When the supply voltage and L:W ratio are the same as the above, and the silicon membrane thickness is 45 μm, the full scale output voltage is 43.05 mV, and pressure sensitivity is 2.153 mV/kPa. Therefore, the sensor has higher sensitivity and good temperature characteristics compared to the traditional piezoresistive pressure sensor.

  2. Fabrication and characteristics of an nc-Si/c-Si heterojunction MOSFETs pressure sensor.

    Science.gov (United States)

    Zhao, Xiaofeng; Wen, Dianzhong; Li, Gang

    2012-01-01

    A novel nc-Si/c-Si heterojunction MOSFETs pressure sensor is proposed in this paper, with four p-MOSFETs with nc-Si/c-Si heterojunction as source and drain. The four p-MOSFETs are designed and fabricated on a square silicon membrane by CMOS process and MEMS technology where channel resistances of the four nc-Si/c-Si heterojunction MOSFETs form a Wheatstone bridge. When the additional pressure is P, the nc-Si/c-Si heterojunction MOSFETs pressure sensor can measure this additional pressure P. The experimental results show that when the supply voltage is 3 V, length-width (L:W) ratio is 2:1, and the silicon membrane thickness is 75 μm, the full scale output voltage of the pressure sensor is 15.50 mV at room temperature, and pressure sensitivity is 0.097 mV/kPa. When the supply voltage and L:W ratio are the same as the above, and the silicon membrane thickness is 45 μm, the full scale output voltage is 43.05 mV, and pressure sensitivity is 2.153 mV/kPa. Therefore, the sensor has higher sensitivity and good temperature characteristics compared to the traditional piezoresistive pressure sensor.

  3. A Sensitive Optical Sensor Based on DNA Labeled Si@SiO 2 Core ...

    Indian Academy of Sciences (India)

    11

    A Sensitive Optical Sensor Based on DNA Labeled Si@SiO2 Core–Shell Nanoparticle for the Detection of Hg2+ ions in Environmental water samples. Krishnan Srinivasan1, Kathavarayan Subramanian1, Aruliah Rajasekar2, Kadarkarai Murugan3,. Giovanni Benelli4,5 and Kannaiyan Dinakaran6*. 1Department of ...

  4. Computer aided cooling curve analysis for Al-5Si and Al-11Si alloys ...

    African Journals Online (AJOL)

    The effect of grain refiner, modifier, and combination of grain refiner cum modifier was studied on Al-5Si and Al-11Si alloys using computer aided cooling curve analysis. For combined grain refinement and modification effect, Al-Ti-B-Sr single master alloy was developed that acted as both grain refiner and modifier.

  5. 'Pop-out' effect in ITO/Si and SnO2/Si structures

    International Nuclear Information System (INIS)

    Grabko, D.Z.; Kharya, E.E.

    2013-01-01

    In this work the 'pop-out' effect was studied in the ITO/Si and SnO 2 /Si composite structures, and in the silicon single crystals doped with phosphorus, used as a substrate for the above mentioned structures. The carried out research revealed a characteristic peculiarity: the value of the coefficient K = P pop-out /P max at the first stage (P max ≤ 100 mN) was less than at the second one for all studied materials. It confirms the existence of higher internal stresses at the second stage, which leads to a sharper increase of the indenter penetration depth in a material, activation of the relaxation processes at the earlier stage of unloading und, accordingly, to the change of the curve slope angle h pop-out (P max ). Thereby, for the investigated materials (ITO/Si and SnO 2 /Si structures, Si substrate), the following regularity was detected: the appearance of the 'pop-out' effect essentially depends on the P max value and, to a lesser extent, on the unloading velocity. There is a certain loading interval: (40-300) mN for Si substrate and (80-400) mN for the ITO/Si and SnO 2 /Si structures where the 'pop-out' effect appears with a stronger probability. (authors)

  6. Microstructure and Hot Oxidation Resistance of SiMo Ductile Cast Irons Containing Si-Mo-Al

    Science.gov (United States)

    Ibrahim, Mervat M.; Nofal, Adel; Mourad, M. M.

    2017-04-01

    SiMo ductile cast irons are used as high-temperature materials in automotive components, because they are microstructurally stable at high operating temperatures. The effect of different amounts of Si and Mo as well as the addition of 3 wt pct Al on the microstructure, high-temperature oxidation, and mechanical properties of SiMo ductile cast iron was studied. Dilatometric measurements of SiMo ductile iron exhibited obvious differences in the transformation temperature A 1 due to presence of Al and the increase of Si. The microstructure of the SiMo alloys without Al addition showed outstanding nodularity and uniform nodule distribution. However, by adding 3 wt pct Al to low Si-SiMo ductile iron, some compacted graphite was observed. The results of oxidation experiments indicated that high Si-SiMo ductile iron containing 4 and 4.9 wt pct Si had superior resistance to lower Si-SiMo and SiMo ductile iron containing 3 wt pct Al. The results showed also that with increasing Si up to 4.9 wt pct or by replacing a part of Si with 3 wt pct Al, tensile strength increased while elongation and impact toughness decreased.

  7. Effect of Si implantation on the microstructure of silicon nanocrystals and surrounding SiO2 layer

    International Nuclear Information System (INIS)

    Ross, G.G.; Smirani, R.; Levitcharsky, V.; Wang, Y.Q.; Veilleux, G.; Saint-Jacques, R.G.

    2005-01-01

    Si nanocrystals (Si-nc) embedded in a SiO 2 layer have been characterized by means of transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). For local Si concentration in excess 8 x 10 21 Si + /cm 3 , the size of the Si-nc was found to be ∼3 nm and comparatively homogeneous throughout the whole implanted layer. For local Si concentration in excess of ∼2.4 x 10 22 Si + /cm 3 , the Si-nc diameter ranges from ∼2 to ∼12 nm in the sample, the Si-nc in the middle region of the implanted layer being bigger than those near the surface and the bottom of the layer. Also, Si-nc are visible deeper than the implanted depth. Characterization by XPS shows that a large quantity of oxygen was depleted from the first ∼25 nm in this sample (also visible on TEM image) and most of the SiO 2 bonds have been replaced by Si-O bonds. Experimental and simulation results suggest that a local Si concentration in excess of ∼3 x 10 21 Si/cm 3 is required for the production of Si-nc

  8. Electrochemical passivation behaviour of nanocrystalline Fe80Si20 ...

    Indian Academy of Sciences (India)

    The passivation behaviour of binary cast Fe–Si alloys tested in phthalate buffer solution has shown that low Si alloys do not form a thick SiO2 layer and only iron oxide layer forms. In case of Si-rich alloys, formation of a stable SiO2 layer leads to improved corrosion resistance (Wolff et al 2001). The stability of the passive ...

  9. Simulations of Proton Implantation in Silicon Carbide (SiC)

    Science.gov (United States)

    2016-03-31

    Simulations of Proton Implantation in Silicon Carbide (SiC) Jonathan P. McCandless, Hailong Chen, Philip X.-L. Feng Electrical Engineering, Case...of implanting protons (hydrogen ions, H+) into SiC thin layers on silicon (Si) substrate, and explore the ion implantation conditions that are...relevant to experimental radiation of SiC layers. Keywords: silicon carbide (SiC); radiation effects; ion implantation; proton ; stopping and range of

  10. Thermoelectric properties of porous SiC/C composites

    NARCIS (Netherlands)

    Fujisawa, Masashi; Hata, Toshimitsu; Kitagawa, Hiroyuki; Bronsveld, Paul; Suzuki, Youki; Hasezaki, Kazuhiro; Noda, Yasutoshi; Imamura, Yuji

    We developed a porous SiC/C composite by oxidizing a SiC/C composite made from a mixed powder of wood charcoal and SiO2 (32-45 mu m) by pulse current sintering at 1600 and 1800 degrees C under a N-2 atmosphere. The microstructures of the porous SiC/C composites with oxidation and the SiC/C

  11. Silicon etching using only Oxygen at high temperature: An alternative approach to Si micro-machining on 150 mm Si wafers

    Science.gov (United States)

    Chai, Jessica; Walker, Glenn; Wang, Li; Massoubre, David; Tan, Say Hwa; Chaik, Kien; Hold, Leonie; Iacopi, Alan

    2015-12-01

    Using a combination of low-pressure oxygen and high temperatures, isotropic and anisotropic silicon (Si) etch rates can be controlled up to ten micron per minute. By varying the process conditions, we show that the vertical-to-lateral etch rate ratio can be controlled from 1:1 isotropic etch to 1.8:1 anisotropic. This simple Si etching technique combines the main respective advantages of both wet and dry Si etching techniques such as fast Si etch rate, stiction-free, and high etch rate uniformity across a wafer. In addition, this alternative O2-based Si etching technique has additional advantages not commonly associated with dry etchants such as avoiding the use of halogens and has no toxic by-products, which improves safety and simplifies waste disposal. Furthermore, this process also exhibits very high selectivity (>1000:1) with conventional hard masks such as silicon carbide, silicon dioxide and silicon nitride, enabling deep Si etching. In these initial studies, etch rates as high as 9.2 μm/min could be achieved at 1150 °C. Empirical estimation for the calculation of the etch rate as a function of the feature size and oxygen flow rate are presented and used as proof of concepts.

  12. Silicon etching using only Oxygen at high temperature: An alternative approach to Si micro-machining on 150 mm Si wafers.

    Science.gov (United States)

    Chai, Jessica; Walker, Glenn; Wang, Li; Massoubre, David; Tan, Say Hwa; Chaik, Kien; Hold, Leonie; Iacopi, Alan

    2015-12-04

    Using a combination of low-pressure oxygen and high temperatures, isotropic and anisotropic silicon (Si) etch rates can be controlled up to ten micron per minute. By varying the process conditions, we show that the vertical-to-lateral etch rate ratio can be controlled from 1:1 isotropic etch to 1.8:1 anisotropic. This simple Si etching technique combines the main respective advantages of both wet and dry Si etching techniques such as fast Si etch rate, stiction-free, and high etch rate uniformity across a wafer. In addition, this alternative O2-based Si etching technique has additional advantages not commonly associated with dry etchants such as avoiding the use of halogens and has no toxic by-products, which improves safety and simplifies waste disposal. Furthermore, this process also exhibits very high selectivity (>1000:1) with conventional hard masks such as silicon carbide, silicon dioxide and silicon nitride, enabling deep Si etching. In these initial studies, etch rates as high as 9.2 μm/min could be achieved at 1150 °C. Empirical estimation for the calculation of the etch rate as a function of the feature size and oxygen flow rate are presented and used as proof of concepts.

  13. Strained Si engineering for nanoscale MOSFETs

    International Nuclear Information System (INIS)

    Park, Jea-Gun; Lee, Gon-Sub; Kim, Tae-Hyun; Hong, Seuck-Hoon; Kim, Seong-Je; Song, Jin-Hwan; Shim, Tae-Hun

    2006-01-01

    We have revealed a strain relaxation mechanism for strained Si grown on a relaxed SiGe-on-insulator structure fabricated by the bonding, dislocation sink, or condensation method. Strain relaxation for both the bonding and dislocation sink methods was achieved by grading the Ge concentration; in contrast, the relaxation for the condensation method was achieved through Ge atom condensation during oxidation. In addition, we estimated the surface roughness and threading-dislocation pit density for relaxed SiGe layer fabricated by the bonding, dislocation sink, or condensation method. The surface roughness and threading-dislocation pit density for the bonding, dislocation sink, and condensation methods were 2.45, 0.46, and 0.40 nm and 5.0 x 10 3 , 9 x 10 3 , and 0, respectively. In terms of quality and cost-effectiveness, the condensation method was superior to the bonding and dislocation sink methods for forming strained Si on a relaxed SiGe-on-insulator structure

  14. Absolute Calibration of Si iRMs used for Measurements of Si Paleo-nutrient proxies

    Science.gov (United States)

    Vocke, R. D., Jr.; Rabb, S. A.

    2016-12-01

    Silicon isotope variations (reported as δ30Si and δ29Si, relative to NBS28) in silicic acid dissolved in ocean waters, in biogenic silica and in diatoms are extremely informative paleo-nutrient proxies. The resolution and comparability of such measurements depend on the quality of the isotopic Reference Materials (iRMs) defining the delta scale. We report new absolute Si isotopic measurements on the iRMs NBS28 (RM 8546 - Silica Sand), Diatomite, and Big Batch using the Avogadro measurement approach and comparing them with prior assessments of these iRMs. The Avogadro Si measurement technique was developed by the German Physikalish-Technische Bundesanstalt (PTB) to provide a precise and highly accurate method to measure absolute isotopic ratios in highly enriched 28Si (99.996%) material. These measurements are part of an international effort to redefine the kg and mole based on the Planck constant h and the Avogadro constant NA, respectively (Vocke et al., 2014 Metrologia 51, 361, Azuma et al., 2015 Metrologia 52 360). This approach produces absolute Si isotope ratio data with lower levels of uncertainty when compared to the traditional "Atomic Weights" method of absolute isotope ratio measurement calibration. This is illustrated in Fig. 1 where absolute Si isotopic measurements on SRM 990, separated by 40+ years of advances in instrumentation, are compared. The availability of this new technique does not say that absolute Si isotopic ratios are or ever will be better for normal Si isotopic measurements when seeking isotopic variations in nature, because they are not. However, by determining the absolute isotopic ratios of all the Si iRM scale artifacts, such iRMs become traceable to the metric system (SI); thereby automatically conferring on all the artifact-based δ30Si and δ29Si measurements traceability to the base SI unit, the mole. Such traceability should help reduce the potential of bias between different iRMs and facilitate the replacement of delta

  15. Strain-Engineered Nanomembrane Substrates for Si/SiGe Heterostructures

    Science.gov (United States)

    Sookchoo, Pornsatit

    For Group IV materials, including silicon, germanium, and their alloys, although they are most widely used in the electronics industry, the development of photonic devices is hindered by indirect band gaps and large lattice mismatches. Thus, any heterostructures involving Si and Ge (4.17% lattice mismatch) are subject to plastic relaxation by dislocation formation in the heterolayers. These defects make many devices impossible and at minimum degrade the performance of those that are possible. Fabrication using elastic strain engineering in Si/SiGe nanomembranes (NMs) is an approach that is showing promise to overcome this limitation. A key advantage of such NM substrates over conventional bulk substrates is that they are relaxed elastically and therefore free of dislocations that occur in the conventional fabrication of SiGe substrates, which are transferred to the epilayers and roughen film interfaces. In this thesis, I use the strain engineering of NMs or NM stacks to fabricate substrates for the epitaxial growth of many repeating units of Si/SiGe heterostructure, known as a 'superlattice', by the elastic strain sharing of a few periods of the repeating unit of Si/SiGe heterolayers or a Si/SiGe/Si tri-layer structure. In both cases, the process begins with the epitaxial growth of Si/SiGe heterolayers on silicon-on-insulator (SOI), where each layer thickness is designed to stay below its kinetic critical thickness for the formation of dislocations. The heterostructure NMs are then released by etching of the SiO2 sacrificial layer in hydrofluoric acid. The resulting freestanding NMs are elastically relaxed by the sharing of strain between the heterolayers. The NMs can be bonded in-place to their host substrate or transferred to another host substrate for the subsequent growth of many periods of superlattice film. The magnitude of strain sharing in these freestanding NMs is influenced by their layer thicknesses and layer compositions. As illustrated in this

  16. Matrix density effects on the mechanical properties of SiC/RBSN composites

    Science.gov (United States)

    Bhatt, Ramakrishna T.; Kiser, James D.

    1990-01-01

    The room temperature mechanical properties were measured for SiC fiber reinforced reaction-bonded silicon nitride composites (SiC/RBSN) of different densities. The composites consisted of approx. 30 vol percent uniaxially aligned 142 micron diameter SiC fibers (Textron SCS-6) in a reaction-bonded Si3N4 matrix. The composite density was varied by changing the consolidation pressure during RBSN processing and by hot isostatically pressing the SiC/RBSN composites. Results indicate that as the consolidation pressure was increased from 27 to 138 MPa, the average pore size of the nitrided composites decreased from 0.04 to 0.02 microns and the composite density increased from 2.07 to 2.45 gm/cc. Nonetheless, these improvements resulted in only small increases in the first matrix cracking stress, primary elastic modulus, and ultimate tensile strength values of the composites. In contrast, HIP consolidation of SiC/RBSN resulted in a fully dense material whose first matrix cracking stress and elastic modulus were approx. 15 and 50 percent higher, respectively, and ultimate tensile strength values were approx. 40 percent lower than those for unHIPed SiC/RBSN composites. The modulus behavior for all specimens can be explained by simple rule-of-mixture theory. Also, the loss in ultimate strength for the HIPed composites appears to be related to a degradation in fiber strength at the HIP temperature. However, the density effect on matrix fracture strength was much less than would be expected based on typical monolithic Si3N4 behavior, suggesting that composite theory is indeed operating. Possible practical implications of these observations are discussed.

  17. On the compliant behaviour of free-standing Si nanostructures on Si(001) for Ge nanoheteroepitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kozlowski, Grzegorz

    2012-04-24

    Selective chemical vapor deposition Ge heteroepitaxy approaches for high quality Ge nanostructure growth with reasonable thermal budget must be developed for local Ge photonic module integration. A promising vision is offered by the compliant substrate effects within nanometer scale Ge/Si heteroepitaxial structures. Here, in contrast to the classical Ge deposition on bulk Si substrates, the thermal and lattice mismatch strain energy accumulated in the Ge epilayer is partially shifted to the free-standing Si nanostructure. This strain partitioning phenomenon is at the very heart of the nanoheteroepitaxy theory (NHE) and, if strain energy levels are correctly balanced, offers the vision to grow defect-free nanostructures of lattice mismatched semiconductors on Si. In case of the Ge/Si heterosystem with a lattice mismatch of 4.2%, the strain partitioning phenomenon is expected to be triggered when free-standing Si nanopillars with the width of 50 nm and below are used. In order to experimentally verify NHE with its compliant substrate effects, a set of free-standing Ge/Si nanostructures with diameter ranging from 150 to 50 nm were fabricated and investigated. The main limitation corresponds to a simultaneous detection of (a) the strain partitioning phenomenon between Ge and Si and (b) the absence of defects on the nano-scale. In this respect, synchrotron-based grazing incidence X-ray diffraction was applied to study the epitaxial relationship, defect and strain characteristics with high resolution and sensitivity in a non-destructive way. Raman spectroscopy supported by finite element method calculations were used to investigate the strain distribution within a single Ge/Si nanostructure. Special focus was devoted to transmission electron microscopy to determine the quality of the Ge epilayer. It was found, that although high quality Ge nanoclusters can be achieved by thermal annealing on Si pillars bigger than 50 nm in width, no proof of strain partitioning

  18. Production of Si by vacuum carbothermal reduction of SiO2 using concentrated solar energy

    Science.gov (United States)

    Loutzenhiser, Peter G.; Tuerk, Ozan; Steinfeld, Aldo

    2010-09-01

    Using concentrated solar radiation as the energy source of high-temperature process heat, the carbothermal reduction of silica to silicon was examined thermodynamically and demonstrated experimentally at vacuum pressures. Reducing the system pressure favors Si(g) formation, enabling its vacuum distillation. Experimentation in a solar reactor was performed in the range 1,997-2,263 K at ˜3×10-3 bar with mixtures of charcoal and silica directly exposed to radiative flux intensities equivalent to 6,500 suns, yielding Si purities ranging from 66.1-79.2 wt.%. The Si purity increased with temperature. Solid characterizations showed SiC and SiO as important reaction intermediaries.

  19. Joining of SiCf/SiC composites for thermonuclear fusion reactors

    International Nuclear Information System (INIS)

    Ferraris, M.; Badini, C.; Montorsi, M.; Appendino, P.; Scholz, H.W.

    1994-01-01

    Due to their favourable radiological behaviour, SiC f /SiC composites are promising structural materials for future use in fusion reactors. A problem to cope with is the joining of the ceramic composite material (CMC) to itself for more complex structures. Maintenance concepts for a reactor made of SiC f /SiC will demand a method of joining. The joining agents should comply with the low-activation approach of the base material. With the acceptable elements Si and Mg, sandwich structures of composite/metal/composite were prepared in Ar atmosphere at temperatures just above the melting points of the metals. Another promising route is the use of joining agents of boro-silicate glasses: their composition can be tailored to obtain softening temperatures of interest for fusion applications. The glassy joint can be easily ceramised to improve thermomechanical properties. The joining interfaces were investigated by SEM-EDS, XRD and mechanical tests. ((orig.))

  20. Mechanoactivation of chromium silicide formation in the SiC-Cr-Si system

    Directory of Open Access Journals (Sweden)

    Vlasova M.

    2002-01-01

    Full Text Available The processes of simultaneous grinding of the components of a SiC-Cr-Si mixture and further temperature treatment in the temperature range 1073-1793 K were studied by X-ray phase analysis, IR spectroscopy, electron microscopy, and X-ray microanalysis. It was established that, during grinding of the mixture, chromium silicides form. A temperature treatment completes the process. Silicide formation proceeds within the framework of the diffusion of silicon into chromium. In the presence of SiO2 in the mixture, silicide formation occurs also as a result of the reduction of silica by silicon and silicon carbide. The sintering of synthesized composite SiC-chromium silicides powders at a high temperature under a high pressure (T = 2073 K, P = 5 GPa is accompanied by the destruction of cc-SiC particles, the cc/3 transition in silicon carbide and deformation distortions of the lattices of chromium silicides.

  1. Processing and properties of SiCf/SiBOC ceramic matrix composites by polyborosiloxane impregnation and pyrolysis

    Science.gov (United States)

    Vijay, Vipin; Prabhakaran, P. V.; Devasia, Renjith

    2013-06-01

    SiCf/SiBOC Ceramic Matrix Composites (CMCs) were fabricated using polyborosiloxane as the matrix resin and Nicalon™ NL-202 silicon carbide fiber as the reinforcement via polymer infiltration/impregnation and pyrolysis process (PIP). Repeated PIP cycles resulted in CMCs with a density value of ≈ 2 g/cc and a maximum average flexural strength value of 108 MPa. Oxidation resistance of SiCf/SiBOC was compared with Cf/C and Cf/SiBOC at 1000°C. SiCf/SiBOC composite shows a better oxidation resistance due to the formation of a protective layer of amorphous borosilicate glass on oxidation.

  2. Buffer-eliminated, charge-neutral epitaxial graphene on oxidized 4H-SiC (0001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Sirikumara, Hansika I., E-mail: hansi.sirikumara@siu.edu; Jayasekera, Thushari, E-mail: thushari@siu.edu [Department of Physics, Southern Illinois University, Carbondale, Illinois 62901 (United States)

    2016-06-07

    Buffer-eliminated, charge-neutral epitaxial graphene (EG) is important to enhance its potential in device applications. Using the first principles Density Functional Theory calculations, we investigated the effect of oxidation on the electronic and structural properties of EG on 4H-SiC (0001) surface. Our investigation reveals that the buffer layer decouples from the substrate in the presence of both silicate and silicon oxy-nitride at the interface, and the resultant monolayer EG is charge-neutral in both cases. The interface at 4H-SiC/silicate/EG is characterized by surface dangling electrons, which opens up another route for further engineering EG on 4H-SiC. Dangling electron-free 4H-SiC/silicon oxy-nitride/EG is ideal for achieving charge-neutral EG.

  3. Hysteresis in the Active Oxidation of SiC

    Science.gov (United States)

    Jacobson, Nathan S.; Harder, Bryan J.; Myers, Dwight L.

    2011-01-01

    Si and SiC show both passive oxidation behavior where a protective film of SiO2 forms and active oxidation behavior where a volatile suboxide SiO(g) forms. The active-to-passive and passive-to-active oxidation transitions are explored for both Si and SiC. Si shows a dramatic difference between the P(O2) for the two transitions of 10-4 bar. The active-to-passive transition is controlled by the condition for SiO2/Si equilibrium and the passive-to-active transition is controlled by the decomposition of SiO2. In the case of SiC, the P(O2) for these transitions are much closer. The active-to-passive transition appears to be controlled by the condition for SiO2/SiC equilibrium. The passive-to-active transition appears to be controlled by the interfacial reaction of SiC and SiO2 and subsequent generation of gases at the interface which leads to scale breakdown.

  4. Effect of hydrostatic pressure on photoluminescence spectra from structures with Si nanocrystals fabricated in SiO2 matrix

    International Nuclear Information System (INIS)

    Zhuravlev, K.S.; Tyschenko, I.E.; Vandyshev, E.N.; Bulytova, N.V.; Misiuk, A.; Rebohle, L.; Skorupa, W.

    2002-01-01

    The effect of hydrostatic pressure applied at high temperature on photoluminescence of Si-implanted SiO 2 films was studied. A 'blue'-shift of PL spectrum from the SiO 2 films implanted with Si + ions to total dose of 1.2x10 17 cm -2 with increase in hydrostatic pressure was observed. For the films implanted with Si + ions to a total dose of 4.8x10 16 cm -2 high temperature annealing under high hydrostatic pressure (12 kbar) causes a 'red'-shift of photoluminescence spectrum. The 'red' photoluminescence bands are attributed to Si nanocrystals while the 'blue' ones are related to Si nanocrystals of reduced size or chains of silicon atoms or Si-Si defects. A decrease in size of Si nanocluster occurs in result of the pressure-induced decrease in the diffusion of silicon atoms. (author)

  5. Computer simulation of CaSiO3 glass under compression: correlation between Si-Si pair radial distribution function and intermediate range order structure

    Science.gov (United States)

    Lan, Mai Thi; Thuy Duong, Tran; Iitaka, Toshiaki; Van Hong, Nguyen

    2017-06-01

    The structural organization of CaSiO3 glass at 600 K and under pressure of 0-100 GPa is investigated by molecular dynamics simulation (MDS). Results show that the atomic structure of CaSiO3 comprises SiO n and CaO m units considered as basic structural polyhedra. At low pressure, most of the basic structural polyhedra are SiO4, CaO5, CaO6 and CaO7. At high pressure most of the basic structural polyhedra are SiO5, SiO6 and CaO9, CaO10 and CaO11. The distribution of basic structural polyhedra is not uniform resulting in formation of Ca-rich and Si-rich regions. The distribution of SiO4, SiO5 and SiO6 polyhedra is also not uniform, but it tends to form SiO4-, SiO5-, and SiO6-clusters. For the Si-O network, under compression there is a gradual transition from the tetrahedral network (SiO4) to the octahedral network (SiO6) via SiO5 polyhedra. The SiO5-clusters are the same as immediate-phase in the transformation process. The size and shape of SiO4 tetrahedra change strongly under compression. While the size of SiO5 and SiO6 has also changed significantly, but the shape is almost unchanged under compression. The SiO n polyhedra can connect to each other via one common oxygen ion (corner-sharing bond), two common oxygen ions (edge-sharing bond) or three common oxygen ions (face-sharing bond). The Si-Si bond length in corner-sharing bonds is much longer than the ones in edge-sharing and face-sharing bonds. The change of intermediate range order (IRO) structure under compression relating to edge- and face-sharing bonds amongst SiO n at high pressure is the origin of the first peak splitting of the radial distribution functions of Si-Si pair. Under compression, the number of non-bridging oxygen (NBO) decreases. This makes the Si-O network more polymerized. At low pressure, most of the Ca2+ ions incorporate into the Si-O network via NBOs. At high pressure, the amount of NBO decreases, Ca2+ ions mainly incorporate into the Si-O network via bridging oxygen (BO) that

  6. A DFT investigation on geometry and chemical bonding of isoelectronic Si8N6V-, Si8N6Cr, and Si8N6Mn+ clusters

    Science.gov (United States)

    Tam, Nguyen Minh; Pham, Hung Tan; Cuong, Ngo Tuan; Tung, Nguyen Thanh

    2017-10-01

    The geometric feature and chemical bonding of isoelectronic systems Si8N6Mq (M = V, Cr, Mn and q = -1, 0, 1, respectively) are investigated by means of density-functional-theory calculations. The encapsulated form is found for all ground-state structures, where the metal atom locates at the central site of the hollow Si8N6 cage. The Si8N6 cage is established by adding two Si atoms to a distorted Si6N6 prism, which is a combination of Si4N2 and Si2N4 strings. Chemical bonding of Si8N6Mq systems is explored by using the electron localization indicator and theory of atom in molecule, revealing the vital role of metal center in stabilizing the clusters.

  7. Correlation between impurities in Fe-Si amorphous layers synthesized by Fe implantation and photoluminescence property of {beta}-FeSi{sub 2} precipitates in Si

    Energy Technology Data Exchange (ETDEWEB)

    Sun, C.M. [Department of Electronic Engineering, Chinese University of Hong Kong, Shatin, N.T., Hong Kong (China)], E-mail: cmsun@ee.cuhk.edu.hk; Tsang, H.K.; Wong, S.P.; Ke, N. [Department of Electronic Engineering, Chinese University of Hong Kong, Shatin, N.T., Hong Kong (China); Hark, S.K. [Department of Physics, Chinese University of Hong Kong, Shatin, N.T., Hong Kong (China)

    2008-11-15

    Completely amorphous Fe-Si layers are formed by Fe implantation into Si substrate at a dosage of 5x10{sup 15} cm{sup -2} using a metal vapor vacuum arc (MEVVA) ion source under 80 kV extraction voltage and cryogenic temperature. After thermal annealing, {beta}-FeSi{sub 2} precipitates are formed in Si matrix. The influence of impurities in these amorphous Fe-Si layers on the photoluminescence (PL) from {beta}-FeSi{sub 2} precipitates is investigated. PL is found to be significantly enhanced by optimizing the impurity concentration and annealing scheme. After 60 s of rapid thermal annealing (RTA) at 900 deg. C, {beta}-FeSi{sub 2} precipitates in medium boron-doped Si substrate give the strongest PL intensity without boron out-diffusion from them.

  8. Microhardness evaluation alloys Hf-Si-B; Avaliacao de microdureza de ligas Hf-Si-B

    Energy Technology Data Exchange (ETDEWEB)

    Gigolotti, Joao Carlos Janio; Costa, Eliane Fernandes Brasil [Centro Universitario de Volta Redonda (UNIFOA), Volta Redonda, RJ (Brazil); Nunes, Carlos Angelo; Rocha, Elisa Gombio; Coelho, Gilberto Carvalho, E-mail: carlosjanio@uol.com.br, E-mail: eliane-costabrasi@hotmail.com, E-mail: cnunes@demar.eel.usp.br, E-mail: elisarocha@alunos.eel.usp.br, E-mail: coelho@demar.eel.usp.br [Universidade de Sao Paulo (USP), Lorena, SP (Brazil)

    2014-08-15

    The technological advance has generated increasing demand for materials that can be used under high temperature, what includes intermetallic MR-Si-B (MR = refractory metal) alloys with multiphase structures, that can also be applied in oxide environments. Thus, this work had for objective the micro hardness study of the Hf-Si-B system alloys, heat treated at 1600 deg C, in the Hf rich region. Hf-Si-B alloys had been produced with blades of Hf (min. 99.8%), Si (min. 99.998%) and B (min. 99.5%), in the voltaic arc furnace and heat treated at 1600 deg C under argon atmosphere. The relationship of the phases had been previously identified by X-ray diffraction and contrast in backscattered electron imaging mode. The alloys had their hardness analyzed by method Vickers (micro hardness) with load of 0.05 kgf and 0.2 kgf and application time of 20 s. The results, obtained from the arithmetic mean of measurements for each alloy on the heterogeneous region, showed a mean hardness of 11.08 GPA, with small coefficient of variation of 3.8%. The borides HfB2 (19.34 GPa) e HfB - 11.76 GPa, showed the hardness higher than the silicides Hf2Si (8.57 GPa), Hf5Si3 (9.63 GPa), Hf3Si2 (11.66 GPa), Hf5Si4 (10.00 GPa), HfSi (10.02 GPa) e HfSi2 (8.61 GPa). (author)

  9. A TEM study of strained SiGe/Si and related heteroepitaxial structures

    International Nuclear Information System (INIS)

    Benedetti, Alessandro

    2002-01-01

    The role of SiGe/Si heterostructures and related materials has become increasingly important within the last few decades. In order to increase the scale of integration, however, devices with active elements not larger than few tens of nanometer have been recently introduced. There is, therefore, a strong need for an analytical technique capable of giving information about submicron-sized components. An investigation on a nanometre scale can be performed by the combination of a fully equipped Transmission Electron Microscope (TEM) with a Field Emission Gun (PEG) electron source, which enables one to use a wide range of analytical techniques with an electron probe as small as 0.5 nm. In this work, two different types of SiGe/Si-based devices were investigated. Strained-Si n-channel MOSFETs. The use of Strained-Si n-channel grown on SiGe should improve both carrier mobility and transconductance with respect to conventional MOSFETs. Materials analysed in this work showed an extremely high transconductance but a rather low mobility. In order to relate their microstructural properties to their electrical performance, as well as to improve the device design, a full quantitative and qualitative structural characterisation was performed. SiGe Multiple Quantum Wells (MQW) IR detectors Light detection is achieved by collecting the photogenerated carriers, injected from the SiGe QWs layers into the Si substrate. A key factor is the Ge profile across a single QW, since it governs the band structure and therefore the device performances. Four different TEM techniques were used to determine the Ge distribution across a single well, showing an overall good agreement among the results. The Ge profiles broadening, consistent with data available in literature, was successfully explained and theoretically predicted by the combined effect of Ge segregation and gas dwell times within the reactor. (author)

  10. Crystalline SiCO: Implication on structure and thermochemistry of ternary silicon oxycarbide ceramics

    Science.gov (United States)

    Bodiford, Nelli

    The need for innovative refractory materials---materials that can sustain extreme temperatures---has been constantly growing within the modern industries. Basic requirements for usage at ultra-high-temperatures have been considered such as high melting point, high structural strength, exceptional resistance to oxidation, zero or almost zero creep. Monolithic ceramics alone cannot provide these properties, therefore, composite materials are sought to fulfill the demand. For example, silicon nitride and silicon carbide based ceramics have long been leading contenders for structural use in gas turbine engines. In the course of this work we are investigating amorphous SiCO formed via polymer-to-ceramic route. Previously a considerable amount of work has been done on structures of stoichiometric amorphous SiCO and a "perfect" random network was obtained (experimentally as well as supported by computational work) up to the phase content of 33 mol-% SiC. By "perfect" one assumes to have four fold coordinated Si atoms bonded to C and O; C atoms bond to Si atoms only and O is two fold connected to Si. Beyond 33 mol-% SiC within SiCO phase the structural imperfections and defects start to develop. Aside from the stoichiometric form of SiCO, the polymer-to-ceramic route allows for the incorporation of high molar amounts of carbon to create SiCO ceramic with excess carbon. The incorporation of carbon into silica glass improves high-temperature mechanical properties and increases resistance to crystallization of the amorphous material. The amount of 'free carbon' can be controlled through the choice of precursors used during synthesis. There were no ternary crystalline phases of SiCO observed. However, in systems such as MgO-SiO2, Na2O-Al2O 3-SiO2 there are ternary crystalline compounds (MgSiO 3, Mg2SiO4, NaAlSiO4, NaAlSi3 O8) that are of a greater energetic stability than glasses of the same composition. What makes the SiCO system different? In the approach proposed in this

  11. Gain Stabilization of SiPMs

    CERN Document Server

    Cvach, Jaroslav; Kvasnicka, Jiri; Polak, Ivo; van der Kraiij, Erik; Zalieckas, Justas

    2014-01-01

    The gain of SiPMs depends both on bias voltage and on temperature. For stable operations, both need to be kept constant. In an ILC calorimeter with millions of channels, this is a challenging task. It is, therefore, desirable to compensate for temperature variations by automatically readjusting the bias voltage. We have designed a bias voltage regulator board to achieve this task. We anticipate an uncertainty on the gain stability at the level of $< 1\\%$. First, we present measurements of the gain dependence on temperature and bias voltage for several SiPMs from three different manufacturers and determine their dV/dT dependence. Next, we demonstrate the performance of the gain stability with the bias voltage regulator test board on four SiPMs.

  12. Structural properties of reactively sputtered W-Si-N thin films

    International Nuclear Information System (INIS)

    Vomiero, A.; Boscolo Marchi, E.; Quaranta, A.; Della Mea, G.; Brusa, R. S.; Mariotto, G.; Felisari, L.; Frabboni, S.; Tonini, R.; Ottaviani, G.; Mattei, G.; Scandurra, A.; Puglisi, O.

    2007-01-01

    Tungsten-silicon-nitrogen, W-Si-N, ternary thin films have been reactively sputter deposited from W 5 Si 3 and WSi 2 targets using several nitrogen partial pressures. The films have been thermal annealed in the 600-1000 deg. C temperature range and a wide region of the W-Si-N ternary phase diagram has been explored by changing the N 2 /Ar ratio during the deposition. Multitechnique approach was adopted for the analysis of the samples. Composition has been determined via ion beam analysis; chemical states were investigated using x-ray photoelectron spectroscopy (XPS); crystalline structure was studied using transmission electron microscopy (TEM) and x-ray diffraction (XRD) and surface morphology by scanning electron microscope. The films deposited in pure argon atmosphere are tungsten rich and approach the target contents as N 2 /Ar ratio is varied during deposition. Tungsten enrichment in the films is caused by resputtering of silicon which can be inhibited by the formation of silicon nitride, allowing films with Si/W ratio closer to the target compositions. The higher capability to form nitrides with silicon than with tungsten favors enhancement of nitrogen content in samples deposited from the silicon rich target (WSi 2 ). The samples with excess nitrogen content have shown losses of this element after thermal treatment. XPS measurements show a break of W-N bonds caused by thermal instability of tungsten nitrides. TEM and XRD revealed the segregation of tungsten in form of metallic or silicide nanoclusters in samples with low nitrogen content (W 58 Si 21 N 21 and W 24 Si 42 N 34 ). High amounts of nitrogen were revealed to be highly effective in inhibiting metallic cluster coalescence. Measurements of electrical resistivity of as deposited films were performed using four point probe technique. They were found to lie in the range between 0.4 and 79 mΩ cm depending on sample composition

  13. Thin film pc-Si by aluminium induced crystallization on metallic substrate

    Directory of Open Access Journals (Sweden)

    Cayron C.

    2013-04-01

    Full Text Available Thin film polycrystalline silicon (pc-Si on flexible metallic substrates is promising for low cost production of photovoltaic solar cells. One of the attractive methods to produce pc-Si solar cells consists in thickening a large-grained seed layer by epitaxy. In this work, the deposited seed layer is made by aluminium induced crystallization (AIC of an amorphous silicon (a-Si thin film on metallic substrates (Ni/Fe alloy initially coated with a tantalum nitride (TaN conductive diffusion barrier layer. Effect of the thermal budget on the AIC grown pc-Si seed layer was investigated in order to optimize the process (i.e. the quality of the pc-Si thin film. Structural and optical characterizations were carried out using optical microscopy, μ-Raman and Electron Backscatter Diffraction (EBSD. At optimal thermal annealing conditions, the continuous AIC grown pc-Si thin film showed an average grain size around 15 μm. The grains were preferably (001 oriented which is favorable for its epitaxial thickening. This work proves the feasibility of the AIC method to grow large grains pc-Si seed layer on TaN coated metal substrates. These results are, in terms of grains size, the finest obtained by AIC on metallic substrates.

  14. In vacuo growth studies of Ru thin films on Si, SiN, and SiO2 by high-sensitivity low energy ion scattering

    NARCIS (Netherlands)

    Coloma Ribera, R.; van de Kruijs, Robbert Wilhelmus Elisabeth; Sturm, Jacobus Marinus; Yakshin, Andrey; Bijkerk, Frederik

    2016-01-01

    In vacuo high-sensitivity low energy ion scattering (HS-LEIS) has been used to investigate the initial growth stages of DC sputtered Ru on top of Si, SiN, and SiO2. The high surface sensitivity of this technique allowed an accurate determination of surface coverages and thicknesses required for

  15. Heteroepitaxial growth of SiC films by carbonization of polyimide Langmuir-Blodgett films on Si

    Directory of Open Access Journals (Sweden)

    Goloudina S.I.

    2017-01-01

    Full Text Available High quality single crystal SiC films were prepared by carbonization of polyimide Langmuir-Blodgett films on Si substrate. The films formed after annealing of the polyimide films at 1000°C, 1100°C, 1200°C were studied by Fourier transform-infrared (FTIR spectroscopy, X-ray diffraction (XRD, Raman spectroscopy, transmission electon microscopy (TEM, transmission electron diffraction (TED, and scanning electron microscopy (SEM. XRD study and HRTEM cross-section revealed that the crystalline SiC film begins to grow on Si (111 substrate at 1000°C. According to the HRTEM cross-section image five planes in 3C-SiC (111 film are aligned with four Si(111 planes at the SiC/Si interface. It was shown the SiC films (35 nm grown on Si(111 at 1200°C have mainly cubic 3C-SiC structure with a little presence of hexagonal polytypes. Only 3C-SiC films (30 nm were formed on Si (100 substrate at the same temperature. It was shown the SiC films (30-35 nm are able to cover the voids in Si substrate with size up to 10 μm.

  16. Material Analysis of Coated Siliconized Silicon Carbide (SiSiC Honeycomb Structures for Thermochemical Hydrogen Production

    Directory of Open Access Journals (Sweden)

    Robert Pitz-Paal

    2013-01-01

    Full Text Available In the present work, thermochemical water splitting with siliconized silicon carbide (SiSiC honeycombs coated with a zinc ferrite redox material was investigated. The small scale coated monoliths were tested in a laboratory test-rig and characterized by X-ray diffractometry (XRD and Scanning Electron Microscopy (SEM with corresponding micro analysis after testing in order to characterize the changes in morphology and composition. Comparison of several treated monoliths revealed the formation of various reaction products such as SiO2, zircon (ZrSiO4, iron silicide (FeSi and hercynite (FeAl2O4 indicating the occurrence of various side reactions between the different phases of the coating as well as between the coating and the SiSiC substrate. The investigations showed that the ferrite is mainly reduced through reaction with silicon (Si, which is present in the SiSiC matrix, and silicon carbide (SiC. These results led to the formulation of a new redox mechanism for this system in which Zn-ferrite is reduced through Si forming silicon dioxide (SiO2 and through SiC forming SiO2 and carbon monoxide. A decline of hydrogen production within the first 20 cycles is suggested to be due to the growth of a silicon dioxide and zircon layer which acts as a diffusion barrier for the reacting specie.

  17. Effects of thermal treatment on infrared optical properties of SiO{sub 2} films on Si Substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Yiqin, E-mail: jiyiqin@gmail.com [National Key Laboratory of Science and Technology on Tunable Laser, Institute of Optical-electronics, Harbin Institute of Technology, Harbin, 150080 (China); Tianjin Key Laboratory of Optical Thin Film, Tianjin Jinhang Institute of Technical Physics, Tianjin 300192 (China); Jiang, Yugang [Tianjin Key Laboratory of Optical Thin Film, Tianjin Jinhang Institute of Technical Physics, Tianjin 300192 (China); Key Laboratory of Advanced Micro-structure Materials, Ministry of Education, Department of Physics, Tongji University, Shanghai, 200092 (China); Liu, Huasong; Wang, Lishuan; Liu, Dandan; Jiang, Chenghui [Tianjin Key Laboratory of Optical Thin Film, Tianjin Jinhang Institute of Technical Physics, Tianjin 300192 (China); Fan, Rongwei; Chen, Deying [National Key Laboratory of Science and Technology on Tunable Laser, Institute of Optical-electronics, Harbin Institute of Technology, Harbin, 150080 (China)

    2013-10-31

    The effects of thermal treatment on infrared optical properties of SiO{sub 2} films on Si substrates by ion beam sputtering technology were investigated. Complex refractive index of SiO{sub 2} films was calculated from Fourier transform infrared transmission spectrum from 400 to 4000 cm{sup −1}. Absorption band properties associated with Si-O-Si stretching, bending, rocking mode at about 1080 cm{sup −1}, 816 cm{sup −1}, 460 cm{sup −1} were analyzed. With the increase of thermal annealing temperature, the absorption peak with Si-O-Si stretching, rocking mode shift to long wave number, but the bending mode shifts to short. After thermal treatment, the infrared optical constants are close to the value of the more stabilized thermal grown SiO{sub 2}. So, it can be concluded that the structure of Si-O-Si network in SiO{sub 2} films deposited on Si was modified to the stable structure of thermal grown SiO{sub 2}. - Highlights: • Effects of annealing on IR optical properties of SiO{sub 2} films are achieved. • Complex dielectric functions of SiO{sub 2} films in the IR wave band are calculated. • Absorption bands properties with three modes are analyzed with thermal treatment.

  18. Spin noise spectroscopy in {sup 28}Si

    Energy Technology Data Exchange (ETDEWEB)

    Boentgen, Tammo; Huebner, Jens; Oestreich, Michael [Institute for Solid State Physics, Gottfried Wilhelm Leibniz University Hannover (Germany); Riemann, Helge [Institut fuer Kristallzuechtung, Berlin (Germany)

    2009-07-01

    We employ spin noise spectroscopy to examine the intrinsic spin lifetime of electrons bound to phosphorus donors in isotopically pure {sup 28}Si at low temperatures. The up to now reported spin lifetime of these electrons are already extremely long but no measurement of the intrinsic lifetime has been undertaken yet. In addition we will measure the ultra narrow exciton transition lines in {sup 28}Si. These transition lines scale with the isotopical purity of the sample and should be according to calculations as small as 100 neV in the studied silicon.

  19. Blowby Gas Composition in Si Engines

    Directory of Open Access Journals (Sweden)

    Páv Karel

    2015-12-01

    Full Text Available The paper deals with a procedure for measuring the composition of blowby gas in the engine crank case by means of a conventional NDIR (Non-Dispersive Infra-Red exhaust gas analyzer. This paper aims to evaluate the exhaust gas portion, as well as the fuel and water vapor fraction in the raw blowby gas. Determination of the exhaust content in the blowby gas is based on CO2 concentration measurement. The measurement results of several SI engines are statistically reviewed regarding the engine operational points. The influence of different operational conditions and used fuel type is shown on raw blowby gas composition in port injection SI engines.

  20. Si(Li) X-ray detector

    International Nuclear Information System (INIS)

    Yuan Xianglin; Li Zhiyong; Hong Xiuse

    1990-08-01

    The fabrication technology of the 10∼80 mm 2 Si(Li) X-ray detectors are described and some problems concerning technology and measurement are discussed. The specifications of the detectors are shown as well. The Si(Li) X-ray detector is a kind of low energy X-ray detectors. Owing to very high energy resolution, fine linearity and high detection efficiency in the range of low energy X-rays, it is widely used in the fields of nuclear physics, medicine, geology and environmental protection, etc,. It is also a kernel component for the scanning electron microscope and X-ray fluorescence analysis systems

  1. Effects of replacement of AlO+ for SiN+ on the structure and optical properties of Sr2Si5N8:Eu2+phosphors

    International Nuclear Information System (INIS)

    Wang, Ting; Zheng, Peng; Liu, Xiaolang; Chen, Haifei; Bian, Liu; Liu, Q.L.

    2014-01-01

    The influence of the replacement of SiN + by AlO + on crystal structure and luminescence properties is reported in a series of Sr 2 Si 5−x Al x N 8−x O x :0.02Eu 2+ phosphors. Changes of refined lattice parameters of the powder X-ray diffraction data suggest that preferential occupation occurred in the evolution of crystal structure: only N II atoms which are connected with two Si atoms can be substituted by O atoms. It is evidenced that Al and O have adverse influence on the emission bands, which just keep the emission peak position around 620 nm. Time-resolved photoluminescence analysis has been employed to describe the energy transfer in Sr 2 Si 5−x Al x N 8−x O x :Eu 2+ samples. The energy transfer effect depends partly on lattice vibration, i.e. phonon energy. Furthermore, the improved photoluminescence intensity and thermal quenching behavior after substituting of AlO + for SiN + allowed Sr 2 Si 5−x Al x N 8−x O x :0.02Eu 2+ a promising candidate as a red phosphor in the white LED applications when x≤0.4. -- Highlights: • Sr 2 Si 5−x Al x N 8−x O x :Eu 2+ phosphors have been synthesized by alloy-nitridation method. • Preferential occupation of O atoms is confirmed. • Al and O have an adverse influence on the emission bands. • The energy transfer involves in phonon-assisted processes. • Thermal quenching behaviors were improved after substituting of AlO + for SiN +

  2. Three Crystalline Polymorphs of KFeSi04, Potassium Ferrisilicate

    DEFF Research Database (Denmark)

    Bentzen, Janet Jonna

    1983-01-01

    Orthorhombic α-KFeSi04 ( a =0.5478, b =0.9192, c =0.8580 nm), hexagonal β-KFeSiO4 (a =0.5309, c =0.8873 nm), and hexagonal γ-KFeSi04 (a =0.5319, c =0.8815 nm) were synthesized by devitrification of KFeSiO4 glass. Powder X-ray diffraction data are given for all three polymorphs. Alpha KFeSiO4, the......, and synthetic kaliophilite, KAISiO4, respectively, and it is proposed that β- and λ-KFeSiO4 are linked by Si-Fe order-disorder. Beta KFeSiO4 transforms slowly into α-KFeSi04 above 910°C but the transformation was not shown to be reversible in the present dry-heating experiments....

  3. Ag on Si(111) from basic science to application

    Energy Technology Data Exchange (ETDEWEB)

    Belianinov, Aleksey [Iowa State Univ., Ames, IA (United States)

    2012-01-01

    In our work we revisit Ag and Au adsorbates on Si(111)-7x7, as well as experiment with a ternary system of Pentacene, Ag and Si(111). Of particular interest to us is the Si(111)-(√3x√3)R30°}–Ag (Ag-Si-√3 hereafter). In this thesis I systematically explore effects of Ag deposition on the Ag-Si-√3 at different temperatures, film thicknesses and deposition fluxes. The generated insight of the Ag system on the Si(111) is then applied to generate novel methods of nanostructuring and nanowire growth. I then extend our expertise to the Au system on the Ag-Si(111) to gain insight into Au-Si eutectic silicide formation. Finally we explore behavior and growth modes of an organic molecule on the Ag-Si interface.

  4. Generation of siRNA Nanosheets for Efficient RNA Interference

    Science.gov (United States)

    Kim, Hyejin; Lee, Jae Sung; Lee, Jong Bum

    2016-04-01

    After the discovery of small interference RNA (siRNA), nanostructured siRNA delivery systems have been introduced to achieve an efficient regulation of the target gene expression. Here we report a new siRNA-generating two dimensional nanostructure in a formation of nanosized sheet. Inspired by tunable mechanical and functional properties of the previously reported RNA membrane, siRNA nanosized sheets (siRNA-NS) with multiple Dicer cleavage sites were prepared. The siRNA-NS has two dimensional structure, providing a large surface area for Dicer to cleave the siRNA-NS for the generation of functional siRNAs. Furthermore, downregulation of the cellular target gene expression was achieved by delivery of siRNA-NS without chemical modification of RNA strands or conjugation to other substances.

  5. Fabrication of high-quality superconductor-insulator-superconductor junctions on thin SiN membranes

    Science.gov (United States)

    Garcia, Edouard; Jacobson, Brian R.; Hu, Qing

    1993-01-01

    We have successfully fabricated high-quality and high-current density superconductor-insulator-superconductor (SIS) junctions on freestanding thin silicon nitride (SIN) membranes. These devices can be used in a novel millimeter-wave and THz receiver system which is made using micromachining. The SIS junctions with planar antennas were fabricated first on a silicon wafer covered with a SiN membrane, the Si wafer underneath was then etched away using an anisotropic KOH etchant. The current-voltage characteristics of the SIS junctions remained unchanged after the whole process, and the junctions and the membrane survived thermal cycling.

  6. Key technology for (V)HTR: laser beam joining of SiC

    International Nuclear Information System (INIS)

    Knorr, J.; Lippmann, W.; Reinecke, A.M.; Wolf, R.; Rasper, R.; Kerber, A.; Wolter, A.

    2005-01-01

    Laser beam joining has numerous advantages over other methods presently known. After having been developed successful for brazing silicon carbide for high temperature applications, this technology is now also available for silicon nitride. Thus the field of application of SiC and Si 3 N 4 which are very interesting materials for the nuclear sector is considerably extended thanks to this new technology. Ceramic encapsulation of fuel and absorber increases the margins for operation at very high temperatures. Additionally, without ceramic encapsulation of the main core components, it will be difficult to continue claiming non-catastrophic behaviour for the (V)HTR. (orig.)

  7. Gold-coated iron nanoparticles in transparent Si3N4 matrix thin films

    Science.gov (United States)

    Sánchez-Marcos, J.; Céspedes, E.; Jiménez-Villacorta, F.; Muñoz-Martín, A.; Prieto, C.

    2013-06-01

    A new method to prepare thin films containing gold-coated iron nanoparticles is presented. The ternary Fe-Au-Si3N4 system prepared by sequential sputtering has revealed a progressive variation of microstructures from Au/Fe/Au/Si3N4 multilayers to iron nanoparticles. Microstructural characterization by transmission electron microscopy, analysis of the magnetic properties and probing of the iron short-range order by X-ray absorption spectroscopy confirm the existence of a gold-coated iron nanoparticles of 1-2 nm typical size for a specific range of iron and gold contents per layer in the transparent silicon nitride ceramic matrix.

  8. Revision of the Li13Si4 structure

    Science.gov (United States)

    Zeilinger, Michael; Fässler, Thomas F.

    2013-01-01

    Besides Li17Si4, Li16.42Si4, and Li15Si4, another lithium-rich representative in the Li–Si system is the phase Li13Si4 (trideca­lithium tetra­silicide), the structure of which has been determined previously [Frank et al. (1975 ▶). Z. Naturforsch. Teil B, 30, 10–13]. A careful analysis of X-ray diffraction patterns of Li13Si4 revealed discrepancies between experimentally observed and calculated Bragg positions. Therefore, we redetermined the structure of Li13Si4 on the basis of single-crystal X-ray diffraction data. Compared to the previous structure report, decisive differences are (i) the introduction of a split position for one Li site [occupancy ratio 0.838 (7):0.162 (7)], (ii) the anisotropic refinement of atomic displacement parameters for all atoms, and (iii) a high accuracy of atom positions and unit-cell parameters. The asymmetric unit of Li13Si4 contains two Si and seven Li atoms. Except for one Li atom situated on a site with symmetry 2/m, all other atoms are on mirror planes. The structure consists of isolated Si atoms as well as Si–Si dumbbells surrounded by Li atoms. Each Si atom is either 12- or 13-coordinated. The isolated Si atoms are situated in the ab plane at z = 0 and are strictly separated from the Si–Si dumbbells at z = 0.5. PMID:24454148

  9. Revision of the Li13Si4 structure

    Directory of Open Access Journals (Sweden)

    Thomas F. Fässler

    2013-12-01

    Full Text Available Besides Li17Si4, Li16.42Si4, and Li15Si4, another lithium-rich representative in the Li–Si system is the phase Li13Si4 (tridecalithium tetrasilicide, the structure of which has been determined previously [Frank et al. (1975. Z. Naturforsch. Teil B, 30, 10–13]. A careful analysis of X-ray diffraction patterns of Li13Si4 revealed discrepancies between experimentally observed and calculated Bragg positions. Therefore, we redetermined the structure of Li13Si4 on the basis of single-crystal X-ray diffraction data. Compared to the previous structure report, decisive differences are (i the introduction of a split position for one Li site [occupancy ratio 0.838 (7:0.162 (7], (ii the anisotropic refinement of atomic displacement parameters for all atoms, and (iii a high accuracy of atom positions and unit-cell parameters. The asymmetric unit of Li13Si4 contains two Si and seven Li atoms. Except for one Li atom situated on a site with symmetry 2/m, all other atoms are on mirror planes. The structure consists of isolated Si atoms as well as Si–Si dumbbells surrounded by Li atoms. Each Si atom is either 12- or 13-coordinated. The isolated Si atoms are situated in the ab plane at z = 0 and are strictly separated from the Si–Si dumbbells at z = 0.5.

  10. Hexagonal AlN Layers Grown on Sulfided Si(100) Substrate

    Science.gov (United States)

    Bessolov, V. N.; Gushchina, E. V.; Konenkova, E. V.; L'vova, T. V.; Panteleev, V. N.; Shcheglov, M. P.

    2018-01-01

    We have studied the influence of sulfide passivation on the initial stages of aluminum nitride (AlN)-layer nucleation and growth by hydride vapor-phase epitaxy (HVPE) on (100)-oriented single-crystalline silicon substrates. It is established that the substrate pretreatment in (NH4)2S aqueous solution leads to the columnar nucleation of hexagonal AlN crystals of two modifications rotated by 30° relative to each other. Based on the sulfide treatment, a simple method of oxide removal from and preparation of Si(100) substrate surface is developed that can be used for the epitaxial growth of group-III nitride layers.

  11. Electrical properties of strained nano-thin 3C-SiC/Si heterostructures

    International Nuclear Information System (INIS)

    Rahimi, R; Miller, C M; Raghavan, S; Korakakis, D; Stinespring, C D

    2009-01-01

    The effects of strain on the conduction mechanism in heterostructures consisting of strained nano-thin 3C-SiC films on Si are reported. These films exhibit significantly different electrical behaviours than the bulk material. Strained nano-thin 3C-SiC films were grown on n-type Si substrates by gas source molecular beam epitaxy. Reflection high-energy electron diffraction patterns show that these films are about 3% strained relative to the SiC lattice constant. In order to investigate the electrical properties of thin film structures, Al, Cr and Pt contacts to a nano-thin film 3C-SiC were deposited and characterized. The I-V measurements of the strained nano-thin films demonstrate back-to-back Schottky diode characteristics and the band offsets due to the biaxial tensile strain introduced within the 3C-SiC films were calculated and simulated. Based on the experimental and simulation results, an empirical model for the current transport in the heterostructures based on strained nano-thin films has been proposed. It was found that due to the band alignment of this structure, current is constrained at the surface which allows use of nano-thin films as surface sensors.

  12. Characterization of Si(112) and In/Si(112) studied by SPA-LEED

    Energy Technology Data Exchange (ETDEWEB)

    Hoecker, Jan; Speckmann, Moritz; Schmidt, Thomas; Falta, Jens [Institute of Solid State Physics, University of Bremen, 28359 Bremen (Germany)

    2010-07-01

    High index surfaces are of strong interest in todays research because of the possibility to grow low dimensional structures. It has for instance already been shown that the adsorption of Ga can induce the formation of 1D metal chains on Si(112) (cf. Snijders et al., PRB 72, 2005). In this work we investigated the clean Si(112) surface and the adsorption of In on Si(112) to establish an analogy to Ga/Si(112) using spot profile analyzing low energy electron diffraction (SPA-LEED). By means of reciprocal space mapping we determined the bare Si(112) surface to be decomposed into alternating (5512) and (111) facets in [1 anti 10] direction with (2 x 1) and (7 x 7) reconstruction, respectively (cf. Baski et al., Surf. Sci. 392, 1997). With SPA-LEED we were able to observe the decreasing intensity of the facet spots in-situ while depositing In on Si(112) and thus reveal the smoothening of the surface due to the deposition of In. At saturation coverage we found a (3.x1) reconstruction, where x is dependent on the deposition temperature and changes from x=7 at 400 C to x=5 at 500 C. This leads us to the assumption that the reconstruction is not incommensurate but a mixture of (3 x 1) and (4 x 1) building blocks, which is very similar to the super structure of Ga on Si(112).

  13. Si/Fe flux ratio influence on growth and physical properties of polycrystalline β-FeSi2 thin films on Si(100) surface

    Science.gov (United States)

    Tarasov, I. A.; Visotin, M. A.; Aleksandrovsky, A. S.; Kosyrev, N. N.; Yakovlev, I. A.; Molokeev, M. S.; Lukyanenko, A. V.; Krylov, A. S.; Fedorov, A. S.; Varnakov, S. N.; Ovchinnikov, S. G.

    2017-10-01

    This work investigates the Si/Fe flux ratio (2 and 0.34) influence on the growth of β-FeSi2 polycrystalline thin films on Si(100) substrate at 630 °C. Lattice deformations for the films obtained are confirmed by X-ray diffraction analysis (XRD). The volume unit cell deviation from that of β-FeSi2 single crystal are 1.99% and 1.1% for Si/Fe =2 and Si/Fe =0.34, respectively. Absorption measurements show that the indirect transition ( 0.704 eV) of the Si/Fe =0.34 sample changes to the direct transition with a bandgap value of 0.816 eV for the sample prepared at Si/Fe =2. The absorption spectrum of the Si/Fe =0.34 sample exhibits an additional peak located below the bandgap energy value with the absorption maximum of 0.36 eV. Surface magneto-optic Kerr effect (SMOKE) measurements detect the ferromagnetic behavior of the β-FeSi2 polycrystalline films grown at Si/Fe =0.34 at T=10 K, but no ferromagnetism was observed in the samples grown at Si/Fe =2. Theoretical calculations refute that the cell deformation can cause the emergence of magnetization and argue that the origin of the ferromagnetism, as well as the lower absorption peak, is β-FeSi2 stoichiometry deviations. Raman spectroscopy measurements evidence that the film obtained at Si/Fe flux ratio equal to 0.34 has the better crystallinity than the Si/Fe =2 sample.

  14. Fusion bonding of silicon nitride surfaces

    DEFF Research Database (Denmark)

    Reck, Kasper; Østergaard, Christian; Thomsen, Erik Vilain

    2011-01-01

    While silicon nitride surfaces are widely used in many micro electrical mechanical system devices, e.g. for chemical passivation, electrical isolation or environmental protection, studies on fusion bonding of two silicon nitride surfaces (Si3N4–Si3N4 bonding) are very few and highly application...

  15. Amorphization and recrystallization of epitaxial ReSi2 films grown on Si(100)

    Science.gov (United States)

    Kim, Kun HO; Bai, G.; Nicolet, MARC-A.; Mahan, John E.; Geib, Kent M.

    1991-01-01

    The effects of implantation damage and the chemical species of the implant on structural and electrical properties of epitaxial ReSi2 films on Si(100) implanted with Si-28 or Ar-40 ions, at doses ranging from 10 to the 13th/sq cm to 10 to the 15th/sq cm, were investigated using the backscattering spectrometry, XRD, and the van der Pauw techniques. Results showed that ion implantation produces damage in the film, which increases monotonically with dose; the resistivity of the film decreases monotonically with dose.

  16. Properties of the Si-SiO2 Interfaces in MOS Structures with Nitrogen Doped Silicon

    Directory of Open Access Journals (Sweden)

    Ladislav Harmatha

    2006-01-01

    Full Text Available The article presents the results of capacitance measurements on MOS structures with a silicon substrate that wasdoped by nitrogen during the growth of the single crystal by Czochralski’s method. Attention is paid to the energydistribution of the trap density at the Si-SiO2 interface. The effect of the bond of nitrogen and oxygen brought about a slightincrease in the trap density with a typical distribution of energy maxima of the deep levels in the forbidden band of Si.

  17. Properties of the Si-SiO2 Interfaces in MOS Structures with Nitrogen Doped Silicon

    OpenAIRE

    Ladislav Harmatha; Peter Ballo; Juraj Breza; Pavol Pisecny; Milan Tapajna

    2006-01-01

    The article presents the results of capacitance measurements on MOS structures with a silicon substrate that was doped by nitrogen during the growth of the single crystal by Czochralski’s method. Attention is paid to the energy distribution of the trap density at the Si-SiO2 interface. The effect of the bond of nitrogen and oxygen brought about a slight increase in the trap density with a typical distribution of energy maxima of the deep levels in the forbidden band of Si.

  18. Primary Crystals of AlfeMnSi Intermetallics in the Cast AlSi Alloys

    Directory of Open Access Journals (Sweden)

    Warmuzek M.

    2017-09-01

    Full Text Available In this paper the results of the microscopic observations of the intermetallic AlFeMnSi phases crystals formed in the liquid hypo- and eutectic AlSi alloys containing transition metals 3.0 wt.% Fe and 0.1, 0.5 and 2.0 wt.% Mn were presented. The crystals morphology has been revealed on both polished and deep etched microsections. The different stages of the primary AlFeMnSi phases particles formation in the solidifying alloy and their final morphology were shown as influenced by cooling rate and alloy chemical composition.

  19. Interface characteristics in Co2MnSi/Ag/Co2MnSi trilayer

    Science.gov (United States)

    Li, Yang; Chen, Hong; Wang, Guangzhao; Yuan, Hongkuan

    2016-05-01

    Interface characteristics of Co2MnSi/Ag/Co2MnSi trilayer have been investigated by means of first-principles. The most likely interface is formed by connecting MnSi-termination to the bridge site between two Ag atoms. As annealed at high temperature, the formation of interface DO3 disorder is most energetically favorable. The spin polarization is reduced by both the interface itself and interface disorder due to the interface state occurs in the minority-spin gap. As a result, the magneto-resistance ratio has a sharp drop based on the estimation of a simplified modeling.

  20. Development of Readout Interconnections for the Si-W Calorimeter of SiD

    Energy Technology Data Exchange (ETDEWEB)

    Woods, M.; Fields, R.G.; Holbrook, B.; Lander, R.L.; Moskaleva, A.; Neher, C.; Pasner, J.; Tripathi, M.; /UC, Davis; Brau, J.E.; Frey, R.E.; Strom, D.; /Oregon U.; Breidenbach, M.; Freytag, D.; Haller, G.; Herbst, R.; Nelson, T.; /SLAC; Schier, S.; Schumm, B.; /UC, Santa Cruz

    2012-09-14

    The SiD collaboration is developing a Si-W sampling electromagnetic calorimeter, with anticipated application for the International Linear Collider. Assembling the modules for such a detector will involve special bonding technologies for the interconnections, especially for attaching a silicon detector wafer to a flex cable readout bus. We review the interconnect technologies involved, including oxidation removal processes, pad surface preparation, solder ball selection and placement, and bond quality assurance. Our results show that solder ball bonding is a promising technique for the Si-W ECAL, and unresolved issues are being addressed.

  1. Synthesis, characterization and luminescence of europium perchlorate with MABA-Si complex and coating structure SiO2@Eu(MABA-Si) luminescence nanoparticles.

    Science.gov (United States)

    Fu, Zhi-Fang; Li, Wen-Xian; Bai, Juan; Bao, Jin-Rong; Cao, Xiao-Fang; Zheng, Yu-Shan

    2017-05-01

    This article reports a novel category of coating structure SiO 2 @Eu(MABA-Si) luminescence nanoparticles (NPs) consisting of a unique organic shell, composed of perchlorate europium(III) complex, and an inorganic core, composed of silica. The binary complex Eu(MABA-Si) 3 ·(ClO 4 ) 3 ·5H 2 O was synthesized using HOOCC 6 H 4 N(CONH(CH 2 ) 3 Si(OCH 2 CH 3 ) 3 ) 2 (MABA-Si) and was used as a ligand. Furthermore, the as-prepared silica NPs were successfully coated with the -Si(OCH 2 CH 3 ) 3 group of MABA-Si to form Si-O-Si chemical bonds by means of the hydrolyzation of MABA-Si. The binary complexes were characterized by elemental analysis, molar conductivity and coordination titration analysis. The results indicated that the composition of the binary complex was Eu(MABA-Si) 3 ·(ClO 4 ) 3 ·5H 2 O. Coating structure SiO 2 @Eu(MABA-Si) NPs were characterized using transmission electron microscopy (TEM), scanning electron microscopy (SEM) and infrared (IR) spectra. Based on the SEM and TEM measurements, the diameter of core-SiO 2 particles was ~400 and 600 nm, and the thickness of the cladding layer Eu(MABA-Si) was ~20 nm. In the binary complex Eu(MABA-Si) 3 ·(ClO 4 ) 3 ·5H 2 O, the fluorescence spectra illustrated that the energy of the ligand MABA-Si transferred to the energy level for the excitation state of europium(III) ion. Coating structure SiO 2 @Eu(MABA-Si) NPs exhibited intense red luminescence compared with the binary complex. The fluorescence lifetime and fluorescence quantum efficiency of the binary complex and of the coating structure NPs were also calculated. The way in which the size of core-SiO 2 spheres influences the luminescence was also studied. Moreover, the luminescent mechanisms of the complex were studied and explained. Copyright © 2016 John Wiley & Sons, Ltd.

  2. Study of Timing Properties of SiPMs at Fermilab

    Energy Technology Data Exchange (ETDEWEB)

    Ronzhin, A. [Fermilab; Los, S. [Fermilab; Martens, M. [Fermilab; Murat, P. [Fermilab; Ramberg, E. [Fermilab; Kim, H. [Chicago U.; Chen, C.-T. [Chicago U.; Kao, C.-M. [Chicago U.; Niesen, K. [SUNY, Stony Brook; Zatserklyaniy, A. [UC, Santa Cruz; Mazzilo, M. [STMIcroelectronics, Catania; Caborne, B. [STMIcroelectronics, Catania; Condorelli, G. [STMIcroelectronics, Catania; Fallica, G. [STMIcroelectronics, Catania; Piana, A. [STMIcroelectronics, Catania; Sanfilippo, D. [STMIcroelectronics, Catania; Valvo, G. [STMIcroelectronics, Catania; Ritt, S. [PSI, Villigen

    2012-01-01

    We continue our timing measurements of Silicon Photomultipliers (SiPM) at the picosecond level at Fermilab .. We using SiPMs readout based on Ortec system, also as on fast waveform digitizer DRS4 [1]. SiPM's signal pulse shape was investigated. The single photoelectron time resolution (SPTR) was measured for the signals coming from the SiPM's. Dependence of the SPTR on the SiPms size was measured. Results of the last test beam test with SiPMs are presented.

  3. Materials and devices for quantum information processing in Si/SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Sailer, Juergen

    2010-12-15

    In this thesis, we cover and discuss the complete way from material science, the fabrication of two-dimensional electron systems (2DES) in Si/SiGe heterostructures in molecular beam epitaxy (MBE), to quantum effects in few-electron devices based on these samples. We applied and compared two different approaches for the creation of pseudo-substrates that are as smooth, relaxed and defect free as possible. In the 'graded buffer' concept, starting from pure Si, the Ge content of the SiGe alloy is slowly and linearly increased until the desired Ge content is reached. In contrast, in the so-called 'low-temperature Si' concept, the SiGe alloy is deposited directly with the final Ge content, but onto a layer of highly defective Si. In terms of crystal defects, the 'graded buffer' turned out to be superior in comparison to the 'low-temperature Si' concept at the expense of a significantly higher material consumption. By continued optimization of the growth process, aiming at reducing the influence of the impurity, it nevertheless became possible to improve the charge carrier mobility from a mere 2000 cm{sup 2}/(Vs) to a record mobility exceeding 100 000 cm{sup 2}/(Vs). Within this work, we extended our MBE system with an electron beam evaporator for nuclear spin free {sup 28}Si. Together with the already existing effusion cell for {sup 70}Ge we were able to realize first 2DES in a nuclear spin free environment after successfully putting it to operation. The highest mobility 2DES in a nuclear spin free environment which have been realized in this thesis exhibited electron mobilities of up to 55 000 cm{sup 2}/(Vs). Quantum effects in Si/SiGe have been investigated in two- and zero-dimensional nanostructures. A remarkable phenomenon in the regime of the integer quantum Hall effect in Si/SiGe 2DES has been discovered and researched. For applications in quantum information processing and for the creation of qubits it is mandatory to

  4. Ciprofloxacin@ SiO 2: Fluorescent nanobubbles

    Indian Academy of Sciences (India)

    We report a new nanomaterial in which ciprofloxacin molecules are incorporated inside silica nanobubbles, denoted as ciprofloxacin@SiO2. The material has been characterised using UV/Vis absorption spectroscopy, transmission electron microscopy, cyclic voltammetry, and emission spectroscopy. The material is stable ...

  5. Universal Converter Using SiC

    Energy Technology Data Exchange (ETDEWEB)

    Dallas Marckx; Brian Ratliff; Amit Jain; Matthew Jones

    2007-01-01

    The grantee designed a high power (over 1MW) inverter for use in renewable and distributed energy systems, such as PV cells, fuel cells, variable speed wind turbines, micro turbines, variable speed gensets and various energy storage methods. The inverter uses 10,000V SiC power devices which enable the use of a straight-forward topology for medium voltage (4,160VAC) without the need to cascade devices or topologies as is done in all commercial, 4,160VAC inverters today. The use of medium voltage reduces the current by nearly an order of magnitude in all current carrying components of the energy system, thus reducing size and cost. The use of SiC not only enables medium voltage, but also the use of higher temperatures and switching frequencies, further reducing size and cost. In this project, the grantee addressed several technical issues that stand in the way of success. The two primary issues addressed are the determination of real heat losses in candidate SiC devices at elevated temperature and the development of high temperature packaging for SiC devices.

  6. SiD Letter of Intent

    CERN Document Server

    Aihara, H.; Oreglia, M.; Berger, E.L.; Guarino, V.; Repond, J.; Weerts, H.; Xia, L.; Zhang, J.; Zhang, Q.; Srivastava, A.; Butler, J.M.; Goldstein, Joel; Velthuis, J.; Radeka, V.; Zhu, R.-Y.; Lutz, P.; de Roeck, A.; Elsener, K.; Gaddi, A.; Gerwig, H.; Grefe, C.; Klempt, W.; Linssen, L.; Schlatter, D.; Speckmayer, P.; Thom, J.; Yang, J.; Christian, D.C.; Cihangir, S.; Cooper, W.E.; Demarteau, M.; Fisk, H.E.; Garren, L.A.; Krempetz, K.; Kutschke, R.K.; Lipton, R.; Para, A.; Tschirhart, R.; Wenzel, H.; Yarema, R.; Grunewald, M.; Pankov, A.; U., Gomel State Tech.; Dutta, T.; Dauncey, P.D.; Balbuena, J.P.; Fleta, C.; Lozano, M.; Ullan, M.; Christian, G.B.; Faus-Golfe, A.; Fuster, J.; Lacasta, C.; Marinnas, C.; Vos, M.; Duarte, J.; Fernandez, M.; Gonzalez, J.; Jaramillo, R.; Lopez, Virto A.; Martinez-Eivero, C.; Moya, D.; Ruiz-Mimeno, A.; Vila, I.; Colledani, C.; Dorokhov, A.; Hu-Guo, C.; Winter, M.; Moortgat-Pick, G.; Onoprienko, D.V.; Kim, G.N.; Park, H.; Adloff, C.; Blaha, J.; Blaising, J.-J.; Cap, S.; Chefdeville, M.; Drancourt, C.; Espargiliare, A.; Gaglione, R.; Geffroy, N.; Jacquemier, J.; Karyotakis, Y.; Prast, J.; Vouters, G.; Gronberg, J.; Walston, S.; Wright, D.; Sawyer, L.; Laloum, M.; Ciobanu, C.; Chauveau, J.; Savoy-Navarro, A.; Andricek, L.; Moser, H.-G.; Cowan, R.f.; Fisher, P.; Yamamoto, R.K.; Kenney, ClMl; Boos, E.E.; Merkin, M.; Chen, S.; Chakraborty, D.; Dyshkant, A.; Hedin, D.; Zutshi, V.; Galkin, V.; D'Ascenzo, N.; Ossetski, D.; Saveliev, V.; Kapusta, F.; De Masi, R.; Vrba, V.; Lu, C.; McDonald, K.T.; Smith, A.J.S.; Bortoletto, D.; Coath, R.; Crooks, J.; Damerell, C.; Gibson, M.; Nichols, A.; Stanitzki, M.; Strube, J.; Turchetta, R.; Tyndel, M.; Weber, M.; Worm, S.; Zhang, Z.; Barklow, T.L.; Belymam, A.; Breidenbach, M.; Cassell, R.; Craddock, W.; Deaconu, C.; Dragone, A.; Graf, N.A.; Haller, G.; Herbst, R.; Hewett, J.L.; Jaros, J.A.; Johnson, A.S.; Kim, P.C.; MacFarlane, D.B.; Markiewicz, T.; Maruyama, T.; McCormick, J.; Moffeit, K.; Neal, H.A.; Nelson, T.K.; Oriunno, M.; Partridge, R.; Peskin, M.E.; Rizzo, T.G.; Rowson, P.; Su, D.; Woods, M.; Chakrabarti, S.; Dieguez, A.; Garrido, Ll.; Kaminski, J.; Conway, J.S.; Chertok, M.; Gunion, J.; Holbrook, B.; Lander, R.L.; Tripathi, S.M.; Fadeyev, V.; Schumm, B.A.; Oreglia, M.; Gill, J.; Nauenberg, U.; Oleinik, G.; Wagner, S.R.; Ranjan, K.; Shivpuri, R.; Varner, G.S.; Orava, R.; Van Kooten, R.; Bilki, B.; Charles, M.; Kim, T.J.; Mallik, U.; Norbeck, E.; Onel, Y.; Brau, B.P.; Willocq, S.; Taylor, G.N.; Riles, Keith; Yang, H.-J.; Kriske, R.; Cremaldi, L.; Rahmat, R.; Lastovicka-Medin, G.; Seidel, S.; Hildreth, M.D.; Wayne, M.; Brau, J.E.; Frey, R.; Sinev, N.; Strom, D.M.; Torrence, E.; Banda, Y.; Burrows, P.N.; Devetak, E.; Foster, B.; Lastovicka, T.; Li, Y.-M.; Nomerotski, A.; Riera-Babures, J.; Vilasis-Cardona, X.; Manly, S.; Adeva, B.; Iglesias Escudero, C.; Vazquez Regueiro, P.; Saborido Silva, J.J.; Gallas Torreira, A.; Gao, D.; Jie, W.; Jungfeng, Y.; Li, C.; Liu, S.; Liu, Y.; Sun, Y.; Wang, Q.; Yi, J.; Yonggang, W.; Zhao, Z.; De, K.; Farbin, A.; Park, S.; Smith, J.; White, A.P.; Yu, J.; Lou, X.C.; Abe, T.; Iwasaki, M.; Lubatti, H.J.; Band, H.R.; Feyzi, F.; Prepost, R.; Karchin, P.E.; Milstene, C.; Baltay, C.; Dhawan, S.; Kwon, Y.-J.

    2009-01-01

    Letter of intent describing SiD (Silicon Detector) for consideration by the International Linear Collider IDAG panel. This detector concept is founded on the use of silicon detectors for vertexing, tracking, and electromagnetic calorimetry. The detector has been cost-optimized as a general-purpose detector for a 500 GeV electron-positron linear collider.

  7. Ordering of vacancies on Si(001)

    NARCIS (Netherlands)

    Zandvliet, Henricus J.W.

    1997-01-01

    Missing dimer vacancies are always present on the clean Si(001) surface. The vacancy density can be increased by ion bombardment (Xe+, Ar+), etching (O2, Br2, I2, etc.) or Ni contamination. The equilibrium shape at low vacancy concentrations (<0.2¿0.3 monolayers) of these vacancy islands is

  8. SiPM's for particle detection

    Energy Technology Data Exchange (ETDEWEB)

    Ahmed, Gamal [Stefan Meyer Institute, Austrian Academy of Sciences, Boltzmanngasse 3, 1090 Vienna (Austria); Al-Azhar University, Faculty of Science, Physics Department, 11884, Cairo (Egypt); Buehler, Paul; Marton, Johann; Suzuki, Ken [Stefan Meyer Institute, Austrian Academy of Sciences, Boltzmanngasse 3, 1090 Vienna (Austria)

    2011-07-01

    Particle identification (PID) for hadrons and leptons over a large range of solid angle and momenta is an essential requirement for physics objectives of the PANDA detector. The solenoid in the target spectrometer produces a magnetic field of B{approx}2T necessary for momentum resolution of the tracking detectors. PID in the barrel section of the target, spectrometer has to work in this strong magnetic field within the solenoid, since it is surrounded by an electromagnetic calorimeter, it cannot take too much radial space. Readout of promptly emitted Cherenkov light with SiPM is a promising combination, with advantages like compactness, magnetic field resistance; simple operation and fast timing make SiPM an excellent candidate. The detection of momenta up to several GeV/c can be performed by the Detection of Internally Reflected Cherenkov (DIRC) light. The PANDA detector will feature two DIRC detectors, a DIRC in barrel geometry surrounding the target region, and a disc DIRC in the forward region. SiPM's with a sensitive area of 3mm x 3mm are on the market. We discuss here SiPM's timing performance characteristics and dependence of the operation conditions measurements performed at Stefan Meyer Institute. The single photoelectron time resolution results are also presented.

  9. $^{31}$Si Self-Diffusion in Si-Ge Alloys and Si-(B-)C-N Ceramics and Diffusion Studies for Al and Si Beam Developments

    CERN Multimedia

    Nylandsted larsen, A; Voss, T L; Strohm, A

    2002-01-01

    An invaluable method for studying diffusion in solids is the radiotracer technique. However, its applicability had been restricted to radiotracer atoms with half-lives $t_{1/2}$ of about 1~d or longer. Within the framework of IS372 a facility was developed in which short-lived radiotracer atoms ( 5min $\\scriptstyle{\\lesssim}$ $t_{1/2}\\scriptstyle{\\lesssim}$1 d ) can be used. For the implantation of the short-lived tracers the facility is flanged to the ISOLDE beamline, and all post-implantation steps required in the radiotracer technique are done in situ.\\\\ After successful application of this novel technique in diffusion studies of $^{11}$C ($t_{1/2}$ = 20.3 min), this experiment aims at performing self-diffusion studies of $^{31}$Si ($t_{1/2}$ = 2.6~h) in Si--Ge alloys and in amorphous Si--(B--)C--N ceramics.\\\\ Our motivation for measuring diffusion in Si--Ge alloys is their recent technological renaissance as well as the purpose to test the prediction that in these alloys the self-diffusion mechanism chang...

  10. Design of lentivirally expressed siRNAs

    NARCIS (Netherlands)

    Liu, Ying Poi; Berkhout, Ben

    2013-01-01

    RNA interference (RNAi) has been widely used as a tool for gene knockdown in fundamental research and for the development of new RNA-based therapeutics. The RNAi pathway is typically induced by expression of ∼22 base pair (bp) small interfering RNAs (siRNAs), which can be transfected into cells. For

  11. New Insights into Understanding Irreversible and Reversible Lithium Storage within SiOC and SiCN Ceramics

    Directory of Open Access Journals (Sweden)

    Magdalena Graczyk-Zajac

    2015-02-01

    Full Text Available Within this work we define structural properties of the silicon carbonitride (SiCN and silicon oxycarbide (SiOC ceramics which determine the reversible and irreversible lithium storage capacities, long cycling stability and define the major differences in the lithium storage in SiCN and SiOC. For both ceramics, we correlate the first cycle lithiation or delithiation capacity and cycling stability with the amount of SiCN/SiOC matrix or free carbon phase, respectively. The first cycle lithiation and delithiation capacities of SiOC materials do not depend on the amount of free carbon, while for SiCN the capacity increases with the amount of carbon to reach a threshold value at ~50% of carbon phase. Replacing oxygen with nitrogen renders the mixed bond Si-tetrahedra unable to sequester lithium. Lithium is more attracted by oxygen in the SiOC network due to the more ionic character of Si-O bonds. This brings about very high initial lithiation capacities, even at low carbon content. If oxygen is replaced by nitrogen, the ceramic network becomes less attractive for lithium ions due to the more covalent character of Si-N bonds and lower electron density on the nitrogen atom. This explains the significant difference in electrochemical behavior which is observed for carbon-poor SiCN and SiOC materials.

  12. New Insights into Understanding Irreversible and Reversible Lithium Storage within SiOC and SiCN Ceramics.

    Science.gov (United States)

    Graczyk-Zajac, Magdalena; Reinold, Lukas Mirko; Kaspar, Jan; Sasikumar, Pradeep Vallachira Warriam; Soraru, Gian-Domenico; Riedel, Ralf

    2015-02-24

    Within this work we define structural properties of the silicon carbonitride (SiCN) and silicon oxycarbide (SiOC) ceramics which determine the reversible and irreversible lithium storage capacities, long cycling stability and define the major differences in the lithium storage in SiCN and SiOC. For both ceramics, we correlate the first cycle lithiation or delithiation capacity and cycling stability with the amount of SiCN/SiOC matrix or free carbon phase, respectively. The first cycle lithiation and delithiation capacities of SiOC materials do not depend on the amount of free carbon, while for SiCN the capacity increases with the amount of carbon to reach a threshold value at ~50% of carbon phase. Replacing oxygen with nitrogen renders the mixed bond Si-tetrahedra unable to sequester lithium. Lithium is more attracted by oxygen in the SiOC network due to the more ionic character of Si-O bonds. This brings about very high initial lithiation capacities, even at low carbon content. If oxygen is replaced by nitrogen, the ceramic network becomes less attractive for lithium ions due to the more covalent character of Si-N bonds and lower electron density on the nitrogen atom. This explains the significant difference in electrochemical behavior which is observed for carbon-poor SiCN and SiOC materials.

  13. Purity and radioactive decay behaviour of industrial 2D-reinforced SiCf/SiC composites

    International Nuclear Information System (INIS)

    Scholz, H.W.; Zucchetti, M.; Casteleyn, K.; Adelhelm, C.

    1994-01-01

    Ceramic matrix composites based on SiC with continuous fibres (SiC f /SiC) are considered promising structural materials for future fusion devices. It was still to clarify, whether impurities in industrial SiC f /SiC could jeopardise radiological advantages. Experimental impurity analyses revealed a two-dimensionally reinforced SiC f /SiC with the matrix produced by CVI as very pure. Chemo-spectrometric methods were combined with radioactivation methods (CPAA, NAA). A quantification of the main constituents Si, C and O was added. Calculations with the FISPACT-2.4 code and EAF-2 library identified elements detrimental for different low-activation criteria. For the neutron exposure, EEF reactor-study first wall and blanket conditions were simulated. The calculated SiC f /SiC included 48 trace elements. Even under conservative assumptions, all low-activation limits of European interest are fulfilled. Exclusively the hands-on recycling limit for the First Wall can intrinsically not be satisfied with SiC. The theoretical goal of a SiC f /SiC depleted of 28 Si (isotopic tailoring) is critically discussed. ((orig.))

  14. Si submonolayer and monolayer digital growth operation techniques using Si 2H 6 as atomically controlled growth nanotechnology

    Science.gov (United States)

    Suda, Yoshiyuki; Hosoya, Naoyuki; Miki, Kazushi

    2003-06-01

    We have previously proposed a Si sub-atomic layer epitaxy (SALE) method with which Si digital epitaxy from non-cracked Si 2H 6 is realized at a growth rate of ˜0.63 ML/cycle by repeating submonolayer Si saturation adsorption and adatom migration induced by surface thermal excitation. By the use of thermally-cracked Si 2H 6 in gas phase, the Si saturation coverage on Si(0 0 1) approaches ˜1 ML and Si atomic layer epitaxy on Ge(0 0 1) has also been achieved (thermally-cracked hydride molecule (TCH)-atomic layer epitaxy (ALE)) in the initial ALE cycles. The adsorption mechanisms are analyzed by scanning tunneling microscope (STM) and hydrogen temperature-programmed desorption (TPD) techniques together with the Si coverage measurement and :SiH 2 production rate analysis. The results are systematically understood and :SiH 2 produced through gas-phase Si 2H 6 thermal cracking nearly self-limitedly adsorbs on Si(0 0 1) by ˜1 ML. From the STM image analysis, the :SiH 2 is interpreted to orderly adsorb on each of the two dangling bonds of the dimer.

  15. Synthesis of crystalline Si-based nanosheets by extraction of Ca from CaSi2 in inositol hexakisphosphate solution

    Science.gov (United States)

    Meng, Xiang; Sasaki, Kenta; Sano, Koki; Yuan, Peiling; Tatsuoka, Hirokazu

    2017-05-01

    Crystalline Si-based nanosheets were successfully synthesized from CaSi2 by a simple soft chemical synthetic method in solution. By immersing CaSi2 powder or CaSi2/Si substrates in an inositol hexakisphosphate (IP6) solution, Ca atoms were extracted from the CaSi2 particles, then Si-based nanosheets were formed. The morphological, structural and optical properties of the Si-based nanosheets were investigated. It is noted that the thin Si-based nanosheets stacked with a void space formed bundle structures, and the nanosheets were easily exfoliated from the bundles to expose the surfaces corresponding to the Si{111} planes. Meanwhile, the surface of the Si nanosheets might be terminated by O, H, or OH bonds. The Si-based nanosheet bundles were then formed and directly rooted to the Si(111) substrates, and had a remarkably highly symmetrical morphology. This study demonstrated a simple method for preparing Si-based nanosheets, and electro- and photo-chemical applications would possibly be expected, such as in lithium ion batteries.

  16. Axial Ge/Si nanowire heterostructure tunnel FETs.

    Energy Technology Data Exchange (ETDEWEB)

    Dayeh, Shadi A. (Los Alamos National Laboratory); Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas (Los Alamos National Laboratory)

    2010-03-01

    }20{sup o} off the <111> axis at about 300 nm away from the Ge/Si interface. This provides a natural marker for placing the gate contact electrodes and gate metal at appropriate location for desired high-on current and reduced ambipolarity as shown in Fig. 2. The 1D heterostructures allow band-edge engineering in the transport direction, not easily accessible in planar devices, providing an additional degree of freedom for designing tunnel FETs (TFETs). For instance, a Ge tunnel source can be used for efficient electron/hole tunneling and a Si drain can be used for reduced back-tunneling and ambipolar behavior. Interface abruptness on the other hand (particularly for doping) imposes challenges in these structures and others for realizing high performance TFETs in p-i-n junctions. Since the metal-semiconductor contacts provide a sharp interface with band-edge control, we use properly designed Schottky contacts (aided by 3D Silvaco simulations) as the tunnel barriers both at the source and drain and utilize the asymmetry in the Ge/Si channel bandgap to reduce ambipolar transport behavior generally observed in TFETs. Fig. 3 shows the room-temperature transfer curves of a Ge/Si heterostructure TFET (H-TFET) for different V{sub DS} values showing a maximum on-current of {approx}7 {micro}A, {approx}170 mV/decade inverse subthreshold slope and 5 orders of magnitude I{sub on}/I{sub off} ratios for all V{sub DS} biases considered here. This high on-current value is {approx}1750 X higher than that obtained with Si p-i-n{sup +} NW TFETs and {approx}35 X higher than that obtained with CNT TFET. The I{sub on}/I{sub off} ratio and inverse subthreshold slope compare favorably to that of Si {approx} 10{sup 3} I{sub on}/I{sub off} and {approx} 800 mV/decade SS{sup -1} but lags behind those of CNT TFET due to poor PECVD nitride gate oxide quality ({var_epsilon}{sub r} {approx} 3-4). The asymmetry in the Schottky barrier heights used here eliminates the stringent requirements of abrupt

  17. Thermodynamic design of a high temperature chemical vapor deposition process to synthesize α-SiC in Si-C-H and Si-C-H-Cl systems

    Science.gov (United States)

    Kang, Yura; Yoo, Chang-Hyoung; Nam, Deok-Hui; Lee, Myung-Hyun; Seo, Won-Seon; Hong, Suklyun; Jeong, Seong-Min

    2018-03-01

    In this study, we thermodynamically reviewed the suitable growth process conditions of α-SiC in the Si-C-H system using tetramethylsilane (TMS) and in the Si-C-H-Cl system using methyltrichlorosilane (MTS). In the Si-C-H-Cl system, pure solid SiC was obtained at high temperatures under a larger range of hydrogen dilution ratios than that tolerated in the Si-C-H system. X-ray diffraction and micro-Raman analysis of the products obtained at 1900, 2000, and 2100 °C showed that the α-SiC becomes more dominant with increasing temperature in the Si-C-H-Cl system. While TMS was unsuitable for high temperature processing due to its high C/Si ratio, MTS was found to be appropriate for growing α-SiC crystals at high temperatures under a range of conditions. These results indicate that a novel method to grow α-SiC single crystals through HTCVD using MTS as a precursor could be established.

  18. Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution

    DEFF Research Database (Denmark)

    Rozhavskaya, Mariia M.; Kukushkin, Sergey A.; Osipov, Andrey V.

    2017-01-01

    crystalline interfaces with epitaxial relationship between SiC/Si and AlN/SiC layers. Optimization of SiC morphology and AlN seed layer thickness facilitates the growth of GaN layers free of pits (v-defects). It is also found that Si doping eliminates these defects in the case of growth on SiC templates...

  19. Conversion of wood flour/SiO2/phenolic composite to porous SiC ceramic containing SiC whiskers

    Directory of Open Access Journals (Sweden)

    Li Zhong

    2013-01-01

    Full Text Available A novel wood flour/SiO2/phenolic composite was chosen to be converted into porous SiC ceramic containing SiC whiskers via carbothermal reduction. At 1550°C the composite is converted into porous SiC ceramic with pore diameters of 10~40μm, and consisting of β-SiC located at the position of former wood cell walls. β-SiC wire-like whiskers of less than 50 nm in diameter and several tens to over 100 μm in length form within the pores. The surface of the resulting ceramic is coated with β-SiC necklace-like whiskers with diameters of 1~2μm.

  20. Development and characterization of Si3N4 coated AlCrN ceramic cutting tool

    International Nuclear Information System (INIS)

    Souza, J.V.C.; Nono, M.C.A.; Martins, G.V.; Machado, J.P.B.; Silva, O.M.M.

    2009-01-01

    Nowadays, silicon nitride based cutting tools are used to machine cast iron from the automotive industry and nickel superalloys from the aero industries. Advances in manufacturing technologies (increased cutting speeds, dry machining, etc.) induced the fast commercial growth of physical vapor deposition (PVD) coatings for cutting tools, in order to increase their life time. In this work, a new composition of the Si 3 N 4 ceramic cutting tool was developed, characterized and subsequently coated, using a PVD process, with aluminum chromium nitride (AlCrN). The Si 3 N 4 substrate properties were analyzed by XRD, AFM, hardness and fracture toughness. The AlCrN coating was analyzed by AFM, grazing incidence X-ray diffraction (GIXRD) and hardness. The results showed that this PVD coating could be formed homogeneously, without cracks and promoted a higher surface hardness to the insert and consequently it can produce a better wear resistance during its application on high speed machining. (author)

  1. Breakdown of coupling dielectrics for Si microstrip detectors

    International Nuclear Information System (INIS)

    Candelori, A.; Paccagnella, A.; Padova Univ.; Saglimbeni, G.

    1999-01-01

    Double-layer coupling dielectrics for AC-coupled Si microstrip detectors have been electrically characterized in order to determine their performance in a radiation-harsh environment, with a focus on the dielectric breakdown. Two different dielectric technologies have been investigated: SiO 2 /TEOS and SiO 2 /Si 3 N 4 . Dielectrics have been tested by using a negative gate voltage ramp of 0.2 MV/(cm·s). The metal/insulator/Si I-V characteristics show different behaviours depending on the technology. The extrapolated values of the breakdown field for unirradiated devices are significantly higher for SiO 2 /Si 3 N 4 dielectrics, but the data dispersion is lower for SiO 2 /TEOS devices. No significant variation of the breakdown field has been measured after a 10 Mrad (Si) γ irradiation for SiO 2 /Si 3 N 4 dielectrics. Finally, the SiO 2 /Si 3 N 4 DC conduction is enhanced if a positive gate voltage ramp is applied with respect to the negative one, due to the asymmetric conduction of the double-layer dielectric

  2. Composition-dependent interfacial abruptness in Au-catalyzed Si(1-x)Ge(x)/Si/Si(1-x)Ge(x) nanowire heterostructures.

    Science.gov (United States)

    Periwal, Priyanka; Sibirev, Nickolay V; Patriarche, Gilles; Salem, Bassem; Bassani, Franck; Dubrovskii, Vladimir G; Baron, Thierry

    2014-09-10

    As MOSFETs are scaled down, power dissipation remains the most challenging bottleneck for nanoelectronic devices. To circumvent this challenge, alternative devices such as tunnel field effect transistors are potential candidates, where the carriers are injected by a much less energetically costly quantum band to band tunneling mechanism. In this context, axial nanowire heterointerfaces with well-controlled interfacial abruptness offer an ideal structure. We demonstrate here the effect of tuning the Ge concentration in a Si1-xGex part of the nanowire on the Si/Si1-xGex and Si1-xGex/Si interfacial abruptness in axial Si-Si1-xGex nanowire heterostructures grown by the Au-catalyzed vapor-liquid-solid method. The two heterointerfaces are always asymmetric irrespective of the Ge concentration or nanowire diameter. For a fixed diameter, the value of interface abruptness decreases with increasing the Ge content for the Si/Si1-xGex interface but shows no strong Ge dependence at the Si1-xGex/Si interface where it features a linear correlation with the nanowire diameter. To rationalize these findings, a kinetic model for the layer-by-layer growth of nanowire heterostructures from a ternary Au-Ge-Si alloy is established that predicts a discrepancy in Ge concentration in the layer and the catalyst droplet. The Ge concentration in each layer is predicted to be dependent on the composition of the preceding layer. The most abrupt heterointerface (∼5 nm) is achieved by growing Si1-xGex with x = 0.85 on Si in a 25 nm diameter nanowire.

  3. Compositional and optical properties of SiO x films and (SiO x /SiO y ) junctions deposited by HFCVD

    Science.gov (United States)

    2014-01-01

    In this work, non-stoichiometric silicon oxide (SiO x ) films and (SiO x /SiO y ) junctions, as-grown and after further annealing, are characterized by different techniques. The SiO x films and (SiO x /SiO y ) junctions are obtained by hot filament chemical vapor deposition technique in the range of temperatures from 900°C to 1,150°C. Transmittance spectra of the SiO x films showed a wavelength shift of the absorption edge thus indicating an increase in the optical energy band gap, when the growth temperature decreases; a similar behavior is observed in the (SiO x /SiO y ) structures, which in turn indicates a decrease in the Si excess, as Fourier transform infrared spectroscopy (FTIR) reveals, so that, the film and junction composition changes with the growth temperature. The analysis of the photoluminescence (PL) results using the quantum confinement model suggests the presence of silicon nanocrystal (Si-nc) embedded in a SiO x matrix. For the case of the as-grown SiO x films, the absorption and emission properties are correlated with quantum effects in Si-nc and defects. For the case of the as-grown (SiO x /SiO y ) junctions, only the emission mechanism related to some kinds of defects was considered, but silicon nanocrystal embedded in a SiO x matrix is present. After thermal annealing, a phase separation into Si and SiO2 occurs, as the FTIR spectra illustrates, which has repercussions in the absorption and emission properties of the films and junctions, as shown by the change in the A and B band positions on the PL spectra. These results lead to good possibilities for proposed novel applications in optoelectronic devices. PACS 61.05.-a; 68.37.Og; 61.05.cp; 78.55.-m; 68.37.Ps; 81.15.Gh PMID:25342935

  4. Phase diagram of the La-Si binary system under high pressure and the structures of superconducting LaSi 5 and LaSi 10

    Science.gov (United States)

    Yamanaka, Shoji; Izumi, Satoshi; Maekawa, Shoichi; Umemoto, Keita

    2009-08-01

    The La-Si binary phase diagram under a high pressure of 13.5 GPa was experimentally constructed. New superconducting silicides LaSi 5 and LaSi 10 were found, which have peritectic decomposition temperatures at 1000 and 750 °C, respectively. The single crystal X-ray structural analysis revealed that there are two polymorphs in LaSi 5. The α-form obtained by heating a molar mixture of LaSi 2 and 3 Si at about 700 °C or by a rapid cooling from 1000 °C under pressure crystallizes with the space group C2 /m and the lattice parameters a=15.11(3), b=4.032(6), c=8.26(1) Å, and β=109.11(1)°. The β-form obtained by a slow cooling from 800-950 °C to 600 °C under pressure has the same space group but with slightly different lattice parameters, a=14.922(7), b=3.906(2), c=8.807(4) Å, and β=107.19(1)°. The β-form is formed during the incomplete transformation of the α-form on cooling, and has always been obtained as a mixture with the α-form. The compound can be characterized as a Zintl phase with a polyanionic framework ∞3[Si] with large tunnels running along the b axis hosting lanthanum ions. In the β-form, three of the five Si sites are disordered. The two polymorphs contain one dimensional sila-polyacene ribbons, Si ladder polymer, running along the b axis. The α-form showed superconductivity with the transition temperature T c of 11.5 K. LaSi 10 crystallizes with the space group 6 3/ mmc and the lattice parameters a=9.623(4), c=4.723(3) Å. It is composed of La containing Si 18 polyhedra (La@Si 18) of hexagonal beer-barrel shape, which form straight columns by stacking along the c-axis via face sharing. One-dimensional columns of La@Si 18 barrels are edge-shared, and bundled with infinite Si trigonal bipyramid chains via corner sharing. The Si atoms in the straight chains have a five-fold coordination. LaSi 10 became a superconductor with T c=6.7 K. The ab initio calculation of the electric band structures showed that α-LaSi 5 and LaSi 10 are metallic

  5. Electroluminescence of erbium in Al/α-Si:H(Er)/p-c-Si/Al structure

    International Nuclear Information System (INIS)

    Kon'kov, I.O.; Kuznetsov, A.N.; Pak, P.E.; Terukov, E.I.; Granitsyna, L.S.

    2001-01-01

    It is informed for the first time on the observation of the erbium intensive electroluminescence from the amorphous hydrated silicon layer by application of the Al/α-Si:H(Er)/p-c-Si/Al structure in the direct shift mode. The above structure is the n-p-heterostructure with the barrier values of 0.3-0.4 eV for the electrons and 0.9-1.1 eV for the holes. The electroluminescence efficiency is evaluated at the level ∼ 2 x 10 -5 . The electroluminescence effect in the Al/α-Si:H(Er)/p-c-Si/Al structure is connected with the hole tunneling from the crystal silicon by the amorphous silicon localized states with the subsequent release into the valent zone [ru

  6. Effect of substrate temperature on the radiation damage from MeV Si implantation in Si

    International Nuclear Information System (INIS)

    Yu, X.K.; Shao Lin; Rusakova, Irene; Wang, X.M.; Ma, K.B.; Chen, H.; Liu, Jiarui; Chu, W.-K.

    2006-01-01

    We have investigated the radiation damage by MeV implantation of Si in Si and its evolution under thermal annealing. Si wafers were implanted with MeV Si at various substrate temperatures. Damages were characterized by Rutherford-backscattering (RBS) channeling and by transmission electron microscopy (TEM). Defect formation after post-implantation annealing is very sensitive to the substrate temperatures during implantation. When the substrate temperature was decreased to 200 K, TEM revealed two distinct bands of damage after annealing: one around the mean projected ion range and another at half the projected range. Our study indicates that the formation of defects at half range results from the solid phase epitaxy growth of initial buried amorphous layers

  7. Subatomic electronic feature from dynamic motion of Si dimer defects in Bi nanolines on Si(001)

    Science.gov (United States)

    Kirkham, C. J.; Longobardi, M.; Köster, S. A.; Renner, Ch.; Bowler, D. R.

    2017-08-01

    Scanning tunneling microscopy (STM) reveals unusual sharp features in otherwise defect-free Bi nanolines self-assembled on Si(001). They appear as subatomic thin lines perpendicular to the Bi nanoline at positive biases and as atomic size beads at negative biases. Density functional theory (DFT) simulations show that these features can be attributed to buckled Si dimers substituting for Bi dimers in the nanoline, where the sharp feature is the counterintuitive signature of these dimers flipping during scanning. The perfect correspondence between the STM data and the DFT simulation demonstrated in this paper highlights the detailed understanding we have of the complex Bi-Si(001) Haiku system. This discovery has applications in the patterning of Si dangling bonds for nanoscale electronics.

  8. Thermal Diffusivity Measurement for p-Si and Ag/p-Si by Photoacoustic Technique

    Science.gov (United States)

    Hussein, Mohammed Jabbar; Yunus, W. Mahmood Mat; Kamari, Halimah Mohamed; Zakaria, Azmi

    2015-10-01

    Thermal diffusivity (TD) of p-Si and Ag/p-Si samples were measured by photoacoustic technique using open photoacoustic cell (OPC). The samples were annealed by heating them at 960, 1050, 1200, and 1300 °C for 3 h in air. The thermal diffusivity of Ag-coated samples was obtained by fitting the photoacoustic experimental data to the thermally thick equation for Rosencwaig and Gersho (RG) theory. For the single layer samples, the thermal diffusivity can be obtained by fitting as well as by obtaining the critical frequency f c . In this study, the thermal diffusivity of the p-Si samples increased with increasing the annealing temperature. The thermal diffusivity of the Ag/p-Si samples, after reaching the maximum value of about 2.73 cm2/s at a temperature of 1200 °C, decreased due to the silver complete melt in the surface of the silicon.

  9. Physical studies of strained Si/SiGe heterostructures. From virtual substrates to nanodevices

    Energy Technology Data Exchange (ETDEWEB)

    Minamisawa, Renato Amaral

    2011-10-21

    During the past two decades, the decrease in intrinsic delay of MOSFETs has been driven by the scaling of the device dimensions. The performance improvement has relied mostly in the increase of source velocity with gate scaling, while the transport properties of the channel have remained constant, i.e., those of conventional Si. Starting at the 90 nm node, uniaxial strain has been introduced in the transistor channel in order to further increase the source velocity. Beyond the 32 nm node, novel channel materials, with superior carrier velocities, and novel device architectures are required in order to continue the performance enhancement of MOSFETs while preserving the electrostatic control. In this Thesis, different physical aspects of strained Si and SiGe materials are investigated as a mean to increase carrier velocity in MOSFET channels. Novel approaches for the fabrication of strained Si based on ion implantation and anneal induced relaxation of virtual substrates are developed. The strain relaxation of SiGe layers is improved using a buried thin Si:C layer in the Si(100) substrate. Further, a Si{sup +} ion implantation and annealing method is investigated for relaxing virtual substrates using lower implantation dose. Finally, the uniaxial relaxation of {l_brace}110{r_brace} surface oriented substrates is demonstrated using a He ion implantation and anneal technique. Apart of channel material studies, the fundamental and technological challenges involved in the integration of strained Si and SiGe into MOSFETs are assessed. The impact of source and drain formation on the elastic strain and electrical properties of strained Si layers and nanowires is examined. Also, the formation of ultra-shallow junction in strained Si/strained Si{sub 0.5}Ge{sub 0.5}/SSOI heterostructures is investigated using different types of ion implanted specie and annealing. The results show that BF{sup +}{sub 2} implantation and low temperature annealing are suitable approaches for

  10. Effect of neutron irradiation on fracture resistance of advanced SiC/SiC composites

    Science.gov (United States)

    Ozawa, Kazumi; Katoh, Yutai; Nozawa, Takashi; Snead, Lance L.

    2011-10-01

    In order to identify the neutron irradiation effects on fracture resistance of advanced SiC/SiC composites, unloading-reloading single edge notched bend tests were conducted and an analytical model based on non-linear fracture mechanics was applied. As a result of the analysis, energy release rate contributed by macro-crack initiation of 3.1 kJ/m 2 for both unirradiated and irradiated advanced SiC/SiC composites (Hi-Nicalon Type-S (0°/90° plain woven)/multilayer/chemically vapor infiltration) is estimated. This result indicates no significant degradation in fracture resistance after neutron irradiation to 5.9 × 10 25 n/m 2 at 800 °C.

  11. Hoop Tensile Characterization Of SiC/SiC Cylinders Fabricated From 2D Fabric

    Science.gov (United States)

    Verrilli, Michael J.; Yun, HeeMann; DiCarlo, James A.; Barnett, Terry R.

    2002-01-01

    Tensile stress-strain properties in the hoop direction were obtained for 100-mm diameter SiC/SiC cylinders using ring specimens machined from the cylinder ends. The cylinders were fabricated from 2D balanced fabric with several material variants, including wall thickness (6, 8, and 12 plies), Sic fiber type (Sylramic, Sylramic-iBN, Hi-Nicalon, and Hi-Nicalon S), fiber sizing type, and matrix type (full CVI Sic, and partial CVI plus melt-infiltrated SiC-Si). Fiber ply splices existed in the all the hoops. Tensile hoop measurements were made at room temperature and 1200 C using hydrostatic ring test facilities. The hoop results are compared with in-plane data measured on flat panels using same material variants, but containing no splices.

  12. Ordered GeSi nanorings grown on patterned Si (001 substrates

    Directory of Open Access Journals (Sweden)

    Ma Yingjie

    2011-01-01

    Full Text Available Abstract An easy approach to fabricate ordered pattern using nanosphere lithography and reactive iron etching technology was demonstrated. Long-range ordered GeSi nanorings with 430 nm period were grown on patterned Si (001 substrates by molecular beam epitaxy. The size and shape of rings were closely associated with the size of capped GeSi quantum dots and the Si capping processes. Statistical analysis on the lateral size distribution shows that the high growth temperature and the long-term annealing can improve the uniformity of nanorings. PACS code1·PACS code2·more Mathematics Subject Classification (2000 MSC code1·MSC code2·more

  13. Magnetohydrodynamic (MHD) considerations for liquid metal blanket and a SiC/SiC composite structure

    International Nuclear Information System (INIS)

    Scholz, R.; Greeff, J. de; Vinche, C.

    1998-01-01

    The electrical conductivity was measured on SiC/SiC composite specimens, in the as-received conditions and after neutron irradiation, for temperatures between 20 deg. C and 1000 deg. C. The tests were aimed at estimating the magnitude of MHD effects in liquid metal blankets and a SiC/SiC composites structure. The electrical conductivity of the unirradiated samples increased continuously with temperature and ranged from 330 (Ω m) -1 at 20 deg. C to 550 (Ω m) -1 at 1000 deg.C. The irradiation reduced only slightly the magnitude of σ indicating the materials tested cannot be treated as an electrical insulator in a MHD analysis for liquid metal blankets. (authors)

  14. Magnetohydrodynamic (MHD) considerations for liquid metal blanket and a SiC/SiC composite structure

    Energy Technology Data Exchange (ETDEWEB)

    Scholz, R.; Greeff, J. de; Vinche, C. [Commission Europeenne Community, JRC, Vatican City State, Holy See (Italy)

    1998-07-01

    The electrical conductivity was measured on SiC/SiC composite specimens, in the as-received conditions and after neutron irradiation, for temperatures between 20 deg. C and 1000 deg. C. The tests were aimed at estimating the magnitude of MHD effects in liquid metal blankets and a SiC/SiC composites structure. The electrical conductivity of the unirradiated samples increased continuously with temperature and ranged from 330 ({omega} m){sup -1} at 20 deg. C to 550 ({omega} m){sup -1} at 1000 deg.C. The irradiation reduced only slightly the magnitude of {sigma} indicating the materials tested cannot be treated as an electrical insulator in a MHD analysis for liquid metal blankets. (authors)

  15. Failure Modeling of SiC/SiC Mini-Composites in Air Oxidizing Environments

    Science.gov (United States)

    Yu, Guoqiang; Gao, Xiguang; Chen, Yue; Song, Yingdong

    2018-03-01

    An iterative method was presented for simulation of the failure process of SiC/SiC mini-composites with pyrolytic carbon interphase exposed to air oxidizing environments under a constant load at 900 °C. This method was based on the possibility fracture strength of SiC fibers caused by random defects and the fiber stress distribution in mini-composites. The fiber strength probability model and Monte Carlo simulation were combined to generate the fracture strength along SiC fibers at 900 °C. The influence of fiber arrangement on fiber stress distribution was assessed to simplify the geometry model which was used to calculate the fiber stress distribution in the mini-composites. The failure process of the mini-composites was simulated, and the calculated oxidation life of the mini-composites matches the experimental data well with an error of -9.40%.

  16. Amorphization threshold in Si-implanted strained SiGe alloy layers

    International Nuclear Information System (INIS)

    Simpson, T.W.; Love, D.; Endisch, E.; Goldberg, R.D.; Mitchell, I.V.; Haynes, T.E.; Baribeau, J.M.

    1994-12-01

    The authors have examined the damage produced by Si-ion implantation into strained Si 1-x Ge x epilayers. Damage accumulation in the implanted layers was monitored in situ by time-resolved reflectivity and measured by ion channeling techniques to determine the amorphization threshold in strained Si 1-x Ge x (x = 0.16 and 0.29) over the temperature range 30--110 C. The results are compared with previously reported measurements on unstrained Si 1-x Ge x , and with the simple model used to describe those results. They report here data which lend support to this model and which indicate that pre-existing strain does not enhance damage accumulation in the alloy layer

  17. IBA study of SiGe/SiO{sub 2} nanostructured multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Barradas, Nuno P., E-mail: nunoni@ctn.ist.utl.pt [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 (ao km 139,7), 2695-066 Bobadela LRS (Portugal); Laboratório de Engenharia Nuclear, Instituto Superior Técnico, Universidade de Lisboa, E.N. 10 (ao km 139,7), 2695-066 Bobadela LRS (Portugal); Alves, E. [Associação Euratom/IST, Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, Av. Rovisco Pais, 1049-001 Lisboa (Portugal); Vieira, E.M.F. [Centre of Physics and Physics Department, University of Minho, 4710-057 Braga (Portugal); Parisini, A. [CNR-IMM Sezione di Bologna, via P. Gobetti 101, 40129 Bologna (Italy); Conde, O. [Physics Department and ICEMS, University of Lisbon, 1749-016 Lisboa (Portugal); Martín-Sánchez, J. [Laser Processing Group, Instituto de Óptica, CSIC, C/Serrano 121, 28006 Madrid (Spain); Rolo, A.G. [Centre of Physics and Physics Department, University of Minho, 4710-057 Braga (Portugal); Chahboun, A. [Centre of Physics and Physics Department, University of Minho, 4710-057 Braga (Portugal); FST Tanger, Physics Department, BP 416 Tanger (Morocco); Gomes, M.J.M. [Centre of Physics and Physics Department, University of Minho, 4710-057 Braga (Portugal)

    2014-07-15

    SiGe/SiO{sub 2} multilayers with layer thickness of 5 nm were deposited with RF magnetron sputtering. The as deposited samples had well defined SiGe amorphous layers. Different annealing treatments were made to promote the formation of SiGe nanocrystals. We report an ion beam analysis study with the Rutherford backscattering and elastic recoil analysis detection techniques, in order to determine the thickness and composition of the nanolayers, and gain insight into the evolution of the roughness of the layers. The results are correlated with other structural properties of the samples, as measured with complementary techniques such as grazing incidence X-ray diffraction annular dark field scanning transmission electron microscopy and high resolution transmission electron microscopy.

  18. Strength of SiCf-SiCm composite tube under uniaxial and multiaxial loading

    Science.gov (United States)

    Shapovalov, Kirill; Jacobsen, George M.; Alva, Luis; Truesdale, Nathaniel; Deck, Christian P.; Huang, Xinyu

    2018-03-01

    The authors report mechanical strength of nuclear grade silicon carbide fiber reinforced silicon carbide matrix composite (SiCf-SiCm) tubing under several different stress states. The composite tubing was fabricated via a Chemical Vapor Infiltration (CVI) process, and is being evaluated for accident tolerant nuclear fuel cladding. Several experimental techniques were applied including uniaxial tension, elastomer insert burst test, open and closed end hydraulic bladder burst test, and torsion test. These tests provided critical stress and strain values at proportional limit and at ultimate failure points. Full field strain measurements using digital image correlation (DIC) were obtained in order to acquire quantitative information on localized deformation during application of stress. Based on the test results, a failure map was constructed for the SiCf-SiCm composites.

  19. Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure

    KAUST Repository

    Zhang, Y.

    2016-07-20

    Current-perpendicular-to-plane electronic transport properties and magnetoresistance of amorphous Co40Fe40B20/SiO2/Si heterostructures are investigated systematically. A backward diode-like rectifying behavior was observed due to the formation of a Schottky barrier between Co40Fe40B20 and Si. The junction resistance shows a metal-insulator transition with decreasing temperature in both the forward and reverse ranges. A large positive magnetoresistance (MR) of ∼2300% appears at 200 K. The positive MR can be attributed to the magnetic-field-controlled impact ionization process of carriers. MR shows a temperature-peak-type character under a constant bias current, which is related to the spin-dependent barrier in the Si near the interface. © CopyrightEPLA, 2016.

  20. Comparative Study of Si and SiC MOSFETs for High Voltage Class D Audio Amplifiers

    DEFF Research Database (Denmark)

    Nielsen, Dennis; Knott, Arnold; Andersen, Michael A. E.

    2014-01-01

    Silicon (Si) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are traditional utilised in class D audio amplifiers. It has been proposed to replace the traditional inefficient electrodynamic transducer with the electrostatic transducer. This imposes new high voltage requirements...... on the MOSFETs of class D amplifiers, and significantly reduces the selection of suitable MOSFETs. As a consequence it is investigated, if Silicon-Carbide (SiC) MOSFETs could represent a valid alternative. The theory of pulse timing errors are revisited for the application of high voltage and capactive loaded...... class D amplifiers. It is shown, that SiC MOSFETs can compete with Si MSOFETs in terms of THD. Validation is done using simulations and a 500 V amplifier driving a 100 nF load. THD+N below 0.3 % is reported...

  1. 75-GHz SiGe Heterojunction Bipolor Transistors: GaAs Performance in Si Technology?

    Science.gov (United States)

    1992-05-22

    frequency results of the base-collector junction without penalty on cur- SiGe and Si epitaxial base transistors (cf. Figs. I and rent density...0.60x.3 0.604.3 20 / IT (GHz) 2, 2o . .. 50A SI BJT R(W/Ob) 3.8 s 10 k (0) 60 so’ ’ . . Re (a) is 1985 1990 R (0I) 18 8 Publication Date 0VCE0 M 2.4 3.2...ee ls "SIMS profile for the SiGe-base transistors of 0Fig. 1, The Ge grading is positioned precisely 20 in the most heavily doped region of the base NC

  2. Cluster formation at the Si/liquid interface in Sr and Na modified Al–Si alloys

    International Nuclear Information System (INIS)

    Barrirero, Jenifer; Li, Jiehua; Engstler, Michael; Ghafoor, Naureen; Schumacher, Peter; Odén, Magnus; Mücklich, Frank

    2016-01-01

    Atom probe tomography was used to compare Na and Sr modified Al–Si hypoeutectic alloys. Both Na and Sr promote the formation of nanometre-sized clusters in the Si eutectic phase. Compositional analyses of the clusters show an Al:Sr ratio of 2.92 ± 0.46 and an Al:Na ratio of 1.07 ± 0.23. It is proposed that SrAl 2 Si 2 and NaAlSi clusters are formed at the Si/liquid interface and take part in the modification process by altering the eutectic Si growth.

  3. Si-H induced synthesis of Si/Cu2O nanowire arrays for photoelectrochemical water splitting

    Science.gov (United States)

    Zhang, Shaoyang; She, Guangwei; Li, Shengyang; Mu, Lixuan; Shi, Wensheng

    2018-01-01

    We report a facile and low-cost method to synthesize Si/Cu2O heterojunction nanowire arrays, without SiOx, at the Si/Cu2O interface. The reductive Si–H bonds on the surface of Si nanowires plays a key role in situ by reducing Cu(II) ions to Cu2O nanocubes and avoiding the SiOx interface layer. Different pH values would vary the electrochemical potential of reactions and as a result, different products would be formed. Utilized as a photoanode for water splitting, Si/Cu2O nanowire arrays exhibit good photoelectrochemical performance.

  4. Gate length scaling trends of drive current enhancement in CMOSFETs with dual stress overlayers and embedded-SiGe

    International Nuclear Information System (INIS)

    Flachowsky, S.; Wei, A.; Herrmann, T.; Illgen, R.; Horstmann, M.; Richter, R.; Salz, H.; Klix, W.; Stenzel, R.

    2008-01-01

    Strain engineering in MOSFETs using tensile nitride overlayer (TOL) films, compressive nitride overlayer (COL) films, and embedded-SiGe (eSiGe) is studied by extensive device experiments and numerical simulations. The scaling behavior was analyzed by gate length reduction down to 40 nm and it was found that drive current strongly depends on the device dimensions. The reduction of drain-current enhancement for short-channel devices can be attributed to two competing factors: shorter gate length devices have increased longitudinal and vertical stress components which should result in improved drain-currents. However, there is a larger degradation from external resistance as the gate length decreases, due to a larger voltage dropped across the external resistance. Adding an eSiGe stressor reduces the external resistance in the p-MOSFET, to the extent that the drive current improvement from COL continues to increase even down the shortest gate length studied. This is due to the reduced resistivity of SiGe itself and the SiGe valence band offset relative to Si, leading to a smaller silicide-active contact resistance. It demonstrates the advantage of combining eSiGe and COL, not only for increased stress, but also for parasitic resistance reduction to enable better COL drive current benefit

  5. Hybrid Integrated Si/SiN Platforms for Wideband Optical Processing

    Science.gov (United States)

    2017-05-08

    we reported that we have developed a simulation platform for the modeling of nonlinear pulse evolution in integrated photonic resonators and...AFRL-AFOSR-VA-TR-2017-0101 Hybrid Integrated Si/SiN Platforms for Wideband Optical Processing Ali Adibi GEORGIA TECH RESEARCH CORPORATION 505 10TH ST...NW ATLANTA, GA 30318-5775 05/08/2017 Final Report DISTRIBUTION A: Distribution approved for public release. Air Force Research Laboratory AF Office

  6. Vaporization of SiO2 and MgSiO3

    Science.gov (United States)

    Stixrude, L. P.; Xiao, B.

    2016-12-01

    Vaporization of SiO2 and MgSiO3B Xiaoa and L Stixrude*a, a Department of Earth Sciences, University College London, WC1E 6BT London, UK *presenting author, email: l.stixrude@ucl.ac.uk Vaporization is an important process in Earth's earliest evolution during which giant impacts are thought to have produced a transient silicate atmosphere. As experimental data are very limited, little is known of the near-critical vaporization of Earth's major oxide components: MgO and SiO2. We have performed novel ab initio molecular dynamics simulations of vapor-liquid coexistence in the SiO2 and MgSiO3 systems. The simulations, based on density functional theory using the VASP code, begin with a suitably prepared liquid slab embedded in a vacuum. During the dynamical trajectory in the canonical ensemble, we see spontaneous vaporization, leading eventually to a steady-state chemical equilibrium between the two coexisting phases. We locate the liquid-vapor critical point at 6600 K and 0.40 g/cm3 for MgSiO3 and 5300 K and 0.43 g/cm3 for SiO2. By carefully examining the trajectories, we determine the composition and speciation of the vapor. For MgSiO3, We find that the vapor is significantly richer in Mg, O, and atomic (non-molecular) species than extrapolation of low-temperature experimental data has suggested. These results will have important implications for our understanding of the initial chemistry of the Earth and Moon and the initial thermal state of Earth.

  7. Dissipative collision studies in 11B + 28Si, 12C + 27Al, 12C + 28Si

    International Nuclear Information System (INIS)

    Kundu, S.; Bhattacharya, C.; Rana, T.K.; Banerjee, K.; Dey, A.; Ghosh, T.K.; Mukherjee, G.; Bhattacharya, S.; Meena, J.K.; Banerjee, S.R.; Mukhopadhyay, S.; Pandit, D.; Mali, P.; Gupta, D.; Shrivastava, A.; Kumar, Suresh; Chatterjee, A.; Ramachandran, K.; Banerjee, P.

    2011-01-01

    It has been observed that the energy damped yield of the fragments emitted in the reactions 28 Si + 12 C at energies 29.5 c.m 11 B (64 MeV) + 28 Si and 12 C (73 MeV) + 27 Al with the aim to see how the fragment emission mechanism changes as one moves to nearest non-alpha cluster system. Here, the dissipative collision studies for these reactions have been reported

  8. Modeling Environmental Degradation of SiC/BN/SiC CMCs (Preprint)

    Science.gov (United States)

    2017-04-28

    AFRL-RX-WP-JA-2017-0308 MODELING ENVIRONMENTAL DEGRADATION OF SIC/BN/SIC CMCS (PREPRINT) Craig Przybyla and Michael K Cinibulk...2017 Interim 22 July 2013 – 6 January 2017 4. TITLE AND SUBTITLE MODELING ENVIRONMENTAL DEGRADATION OF SIC/BN/SIC CMCS (PREPRINT) 5a. CONTRACT...91360 Standard Form 298 (Rev. 8-98) Prescribed by ANSI Std. Z39-18 Modeling environmental degradation of SiC/BN/SiC CMCs Triplicane A

  9. Growth Stress in SiO2 during Oxidation of SiC Fibers (Preprint)

    Science.gov (United States)

    2011-11-01

    calculating the average self-pressure ( pav ) in the SiO2 scale throughout its thickness, as a function of total scale thickness (w), temperature, and fiber...2 ∑ p(bj2 − bj−12 )ij=1 [54] The average pressure ( pav ) was calculated for 6 and 3 µm...for public release; distribution unlimited. Fig. 13. Average SiO2 scale self-pressure ( pav ) for 6 and 3 µm radius fibers as a function of scale

  10. Morphology and chemical termination of HF-etched Si{sub 3}N{sub 4} surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Li-Hong; Debenedetti, William J. I.; Peixoto, Tatiana; Gokalp, Sumeyra; Shafiq, Natis; Veyan, Jean-François; Chabal, Yves J., E-mail: chabal@utdallas.edu [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Michalak, David J.; Hourani, Rami [Components Research, Intel Corporation, Hillsboro, Oregon 97124 (United States)

    2014-12-29

    Several reports on the chemical termination of silicon nitride films after HF etching, an important process in the microelectronics industry, are inconsistent claiming N-H{sub x}, Si-H, or fluorine termination. An investigation combining infrared and x-ray photoelectron spectroscopies with atomic force and scanning electron microscopy imaging reveals that under some processing conditions, salt microcrystals are formed and stabilized on the surface, resulting from products of Si{sub 3}N{sub 4} etching. Rinsing in deionized water immediately after HF etching for at least 30 s avoids such deposition and yields a smooth surface without evidence of Si-H termination. Instead, fluorine and oxygen are found to terminate a sizeable fraction of the surface in the form of Si-F and possibly Si-OH bonds. The relatively unique fluorine termination is remarkably stable in both air and water and could lead to further chemical functionalization pathways.

  11. Evidence of surface loss as ubiquitous limiting damping mechanism in SiN micro- and nanomechanical resonators

    DEFF Research Database (Denmark)

    Villanueva, Luis Guillermo; Schmid, Silvan

    2014-01-01

    Silicon nitride (SiN) micro- and nanomechanical resonators have attracted a lot of attention in various research fields due to their exceptionally high quality factors (Qs). Despite their popularity, the origin of the limiting loss mechanisms in these structures has remained controversial....... In this Letter we propose an analytical model combining acoustic radiation loss with intrinsic loss. The model accurately predicts the resulting mode-dependent Qs of low-stress silicon-rich and high-stress stoichiometric SiN membranes. The large acoustic mismatch of the low-stress membrane to the substrate seems......, and cantilevers) SiN resonators extracted from literature, suggesting surface loss as ubiquitous damping mechanism in thin SiN resonators with Qsurf=βh and β=6×1010±4×1010  m−1. Based on the intrinsic loss the maximal achievable Qs and Qf products for SiN membranes and strings are outlined....

  12. In situ observation of mechanical damage within a SiC-SiC ceramic matrix composite

    International Nuclear Information System (INIS)

    Saucedo-Mora, L.; Lowe, T.; Zhao, S.; Lee, P.D.; Mummery, P.M.; Marrow, T.J.

    2016-01-01

    SiC-SiC ceramic matrix composites are candidate materials for fuel cladding in Generation IV nuclear fission reactors and as accident tolerant fuel clad in current generation plant. Experimental methods are needed that can detect and quantify the development of mechanical damage, to support modelling and qualification tests for these critical components. In situ observations of damage development have been obtained of tensile and C-ring mechanical test specimens of a braided nuclear grade SiC-SiC ceramic composite tube, using a combination of ex situ and in situ computed X-ray tomography observation and digital volume correlation analysis. The gradual development of damage by matrix cracking and also the influence of non-uniform loading are examined. - Highlights: • X-ray tomography with digital volume correlation measures 3D deformation in situ. • Cracking and damage in the microstructure can be detected using the strain field. • Fracture can initiate from the monolithic coating of a SiC-SiC ceramic composite.

  13. Absolute Calibration of Si iRMs used for Si Paleo-nutrient proxies

    Science.gov (United States)

    Vocke, Robert; Rabb, Savelas

    2016-04-01

    The Avogadro Project is an ongoing international effort, coordinated by the International Bureau of Weights and Measures (BIPM) and the International Avogadro Coordination (IAC) to redefine the SI unit mole in terms of the Avogadro constant and the SI unit kg in terms of the Planck constant. One of the outgrowths of this effort has been the development of a novel, precise and highly accurate method to measure calibrated (absolute) isotopic ratios that are traceable to the SI (Vocke et al., 2014 Metrologia 51, 361, Azuma et al., 2015 Metrologia 52 360). This approach has also been able to produce absolute Si isotope ratio data with lower levels of uncertainty when compared to the traditional "Atomic Weights" method of absolute isotope ratio measurement. Silicon isotope variations (reported as delta(Si30)and delta(Si29)) in silicic acid dissolved in ocean waters, in biogenic silica and in diatoms are extremely informative paleo-nutrient proxies. The utility and comparability of such measurements however depends on calibration with artifact isotopic Reference Materials (iRMs). We will be reporting new measurements on the iRMs NBS-28 (RM 8546 - Silica Sand), Diatomite, Big Batch and SRM 990 using the Avogadro measurement approach, comparing them with prior assessments of these iRMs.

  14. Spectroscopic ellipsometry of columnar porous Si thin films and Si nanowires

    Science.gov (United States)

    Fodor, Bálint; Defforge, Thomas; Agócs, Emil; Fried, Miklós; Gautier, Gaël; Petrik, Péter

    2017-11-01

    Columnar mesoporous Si thin films and dense nanowire (SiNW) carpets were investigated by spectroscopic ellipsometry in the visible-near-infrared wavelength range. Porous Si layers were formed by electrochemical etching while structural anisotropy was controlled by the applied current. Layers of highly oriented SiNWs, with length up to 4.1 μm were synthesized by metal-assisted chemical etching. Ellipsometric spectra were fitted with different multi-layered, effective medium approximation-based (EMA) models. Isotropic, in-depth graded, anisotropic and hybrid EMA models were investigated with the help of the root mean square errors obtained from the fits. Ellipsometric-fitted layer thicknesses were also cross-checked by scanning electron microscopy showing an excellent agreement. Furthermore, in the case of mesoporous silicon, characterization also revealed that, at low current densities (100 mA/cm2) this behavior turns around, and anisotropy becomes the dominant feature describing the spectra. Characterization of SiNW layers showed a very high geometrical anisotropy. However, the highest fitted geometrical anisotropy was obtained for the layer composed of ∼1 μm long SiNWs indicating that for thicker layers, collapse of the nanowires occurs.

  15. Reduction of SiO2 to SiC Using Natural Gas

    Science.gov (United States)

    Ksiazek, Michal; Tangstad, Merete; Dalaker, Halvor; Ringdalen, Eli

    2014-09-01

    This paper presents a preliminary study of SiC production by use of natural gas for reduction of silica. Direct reduction of SiO2 by gas mixtures containing CH4, H2, and Ar was studied at temperatures between 1273 K and 1773 K (1000 °C and 1500 °C). Silica in form of particles between 1 and 3 mm and pellets with mean grain size 50 µm were exposed to the gas mixture for 6 hours. Influence of temperature and CH4H2 ratio was investigated. Higher temperature and CH4 concentration resulted in greater SiC production. Two kinds of SiC were found: one was deposited between SiO2 particles, the other one was deposited inside the SiO2 particles. Although the exact reaction mechanisms have not been determined, it is clear that gas-phase reactions play an important role in both cases. The reaction products were analyzed by Electron Probe Micro Analyzer.

  16. Study of Stress Migration Failure in SiLKTM/SiO2 Hybrid Cu Interconnects

    International Nuclear Information System (INIS)

    Tsuchikawa, Haruo; Nakamura, Tomoji; Suzuki, Takashi; Mori, Hiroko; Shono, Ken

    2004-01-01

    Stress migration (SM) behavior is studied for a 130nm-node SiLK TM /SiO2 hybrid structure in which the interlevel dielectrics (ILD) consist of SiLK TM for trench levels and SiO2 for via levels. The failure rate dependence on the temperature, line width and circuit is examined in detail. Furthermore, an effect of dielectric deposition process on the reliability of the hybrid interconnects is investigated. It has been found that SM behavior is essentially similar to that reported in Cu/SiO2 systems. It has also been clarified that SiO2 PVD conditions at via level had a large impact on the failure rate. Therefore, the control of ILD deposition conditions is found to be one of the key factors in suppressing the SM failure. In order to examine the effect of the PVD conditions, the residual stress in vias were measured by using X-ray diffraction method. The results show that σx (the stress component parallel to the surface) in vias greatly depends on the PVD conditions. Then, the relationship between the PVD conditions and the SM failure rate is clarified

  17. Advanced Environmental Barrier Coating Development for SiC/SiC Ceramic Matrix Composites: NASA's Perspectives

    Science.gov (United States)

    Zhu, Dongming

    2016-01-01

    This presentation reviews NASA environmental barrier coating (EBC) system development programs and the coating materials evolutions for protecting the SiC/SiC Ceramic Matrix Composites in order to meet the next generation engine performance requirements. The presentation focuses on several generations of NASA EBC systems, EBC-CMC component system technologies for SiC/SiC ceramic matrix composite combustors and turbine airfoils, highlighting the temperature capability and durability improvements in simulated engine high heat flux, high pressure, high velocity, and with mechanical creep and fatigue loading conditions. The current EBC development emphasis is placed on advanced NASA 2700F candidate environmental barrier coating systems for SiC/SiC CMCs, their performance benefits and design limitations in long-term operation and combustion environments. Major technical barriers in developing environmental barrier coating systems, the coating integrations with next generation CMCs having the improved environmental stability, erosion-impact resistance, and long-term fatigue-environment system durability performance are described. The research and development opportunities for advanced turbine airfoil environmental barrier coating systems by utilizing improved compositions, state-of-the-art processing methods, and simulated environment testing and durability modeling are discussed.

  18. Comparative study by IBIC of Si and SiC diodes irradiated with high energy protons

    Energy Technology Data Exchange (ETDEWEB)

    Garcia Lopez, J., E-mail: fjgl@us.es [Dpto. Física Atómica, Molecular y Nuclear, Universidad de Sevilla, 41080 Sevilla (Spain); CNA (U. Sevilla, J. Andalucia, CSIC), Av. Thomas A. Edison 7, 41092 Sevilla (Spain); Jimenez-Ramos, M.C.; Rodriguez-Ramos, M. [CNA (U. Sevilla, J. Andalucia, CSIC), Av. Thomas A. Edison 7, 41092 Sevilla (Spain); Ceballos, J. [Institute of Microelectronics of Seville, IMSE-CNM (CSIC/University of Seville), Seville 41092 (Spain); Linez, F. [Department of Applied Physics, Aalto University, 02150 Espoo (Finland); Raisanen, J. [Department of Physics, University of Helsinki, Helsinki 00014 (Finland)

    2016-04-01

    The transport properties of a series of Si and SiC diodes have been studied using the Ion Beam Induced Charge (IBIC) technique. Structural defects were induced into the samples during the irradiation with 17 MeV protons. The experimental values of the charge collection efficiency (CCE) vs bias voltages have been analyzed using a modified drift-diffusion model, which takes into account the recombination of carriers in the neutral and depletion regions. From these simulations, we have obtained the values of the carrier’s lifetime for pristine and irradiated diodes, which are found to degrade faster in the case of the SiC samples. However, the decrease of the CCE at high bias voltages is more important for the Si detectors, indicative of the lower radiation hardness of this material compared to SiC. The nature of the proton-induced defects on Si wafers has been studied by Positron Annihilation Spectroscopy (PAS) and Doppler Broadening Spectroscopy (DBS). The results suggest that the main defect detected by the positrons in p-type samples is the divacancy while for n-type at least a fraction of the positron annihilate in another defect. The concentration of defects is much lower than the number of vacancies predicted by SRIM.

  19. Damage accumulation and annealing in 6H-SiC irradiated with Si+

    International Nuclear Information System (INIS)

    Jiang, W.; Weber, W.J.; Thevuthasan, S.; McCready, D.E.

    1998-01-01

    Damage accumulation and annealing in 6H-silicon carbide (α-SiC) single crystals have been studied in situ using 2.0 MeV He + RBS in a left angle 0001 right angle -axial channeling geometry (RBS/C). The damage was induced by 550 keV Si + ion implantation (30 off normal) at a temperature of -110 C, and the damage recovery was investigated by subsequent isochronal annealing (20 min) over the temperature range from -110 C to 900 C. At ion fluences below 7.5 x 10 13 Si + /cm 2 (0.04 dpa in the damage peak), only point defects appear to be created. Furthermore, the defects on the Si sublattice can be completely recovered by thermal annealing at room temperature (RT), and recovery of defects on the C sublattice is suggested. At higher fluences, amorphization occurs; however, partial damage recovery at RT is still observed, even at a fluence of 6.6 x 10 14 Si + /cm 2 (0.35 dpa in the damage peak) where a buried amorphous layer is produced. At an ion fluence of 6.0 x 10 15 Si + /cm 2 (-90 C), an amorphous layer is created from the surface to a depth of 0.6 μm. Because of recovery processes at the buried crystalline-amorphous interface, the apparent thickness of this amorphous layer decreases slightly (<10%) with increasing temperature over the range from -90 C to 600 C. (orig.)

  20. Drawing siRNAs of viral origin out from plant siRNAs libraries.

    Science.gov (United States)

    Miozzi, Laura; Pantaleo, Vitantonio

    2015-01-01

    Viruses are obligate intracellular entities that infect all forms of life. In plants, invading viral nucleic acids trigger RNA silencing machinery and it results in the accumulation of viral short interfering RNAs (v-siRNAs). The study of v-siRNAs population in biological samples has become a major part of many research projects aiming to identify viruses infecting them, including unknown viruses, even at extremely low titer. Currently, siRNA populations are investigated by high-throughput sequencing approaches, which generate very large data sets. The major difficulty in these studies is to properly analyze such huge amount of data. In this regard, easy-to-use bioinformatics tools to groom and decipher siRNA libraries and to draw out v-siRNAs are needed. Here we describe a workflow, which permit users with little experience in bioinformatics to draw out v-siRNAs from raw data sequences obtained by Illumina technology. Such pipeline has been released in the context of Galaxy, an open source Web-based platform for bioinformatics analyses.

  1. Effect of High Si Content on U3Si2 Fuel Microstructure

    Science.gov (United States)

    Rosales, Jhonathan; van Rooyen, Isabella J.; Meher, Subhashish; Hoggan, Rita; Parga, Clemente; Harp, Jason

    2018-02-01

    The development of U3Si2 as an accident-tolerant nuclear fuel has gained research interest because of its promising high uranium density and improved thermal properties. In the present study, three samples of U3Si2 fuel with varying silicon content have been fabricated by a conventional powder metallurgical route. Microstructural characterization via scanning and transmission electron microscopy reveals the presence of other stoichiometry of uranium silicide such as USi and UO2 in both samples. The detailed phase analysis by x-ray diffraction shows the presence of secondary phases, such as USi, U3Si, and UO2. The samples with higher concentrations of silicon content of 7.5 wt.% display additional elemental Si. These samples also possess an increased amount of the USi phase as compared to that in the conventional sample with 7.3 wt.% silicon. The optimization of U3Si2 fuel performance through the understanding of the role of Si content on its microstructure has been discussed.

  2. Low Activation Joining of SiC/SiC Composites for Fusion Applications: Modeling Thermal and Irradiation-induced Swelling Effects on Integrity of Ti3SiC2/SiC Joint

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Ba Nghiep; Henager, Charles H.; Kurtz, Richard J.; Ferraris, M.; Katoh, Yutai

    2017-03-31

    This work developed a continuum damage mechanics model that incorporates thermal expansion combined with irradiation-induced swelling effects to study the origin of cracking observed in recent irradiation experiments. Micromechanical modeling using an Eshelby-Mori-Tanaka approach was used to compute the thermoelastic properties of the Ti3SiC2/SiC joint needed for the model. In addition, a microstructural dual-phase Ti3SiC2/SiC model was developed to determine irradiation-induced swelling of the composite joint at a given temperature resulting from differential swelling of SiC and the Ti3SiC2 MAX phase. Three cases for the miniature torsion hourglass (THG) specimens containing a Ti3SiC2/SiC joint were analyzed corresponding to three irradiation temperatures: 800oC, 500oC, and 400oC.

  3. Technique development for modulus, microcracking, hermeticity, and coating evaluation capability characterization of SiC/SiC tubes

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Xunxiang [Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Ang, Caen K. [Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Singh, Gyanender P. [Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Katoh, Yutai [Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

    2016-08-01

    Driven by the need to enlarge the safety margins of nuclear fission reactors in accident scenarios, research and development of accident-tolerant fuel has become an important topic in the nuclear engineering and materials community. A continuous-fiber SiC/SiC composite is under consideration as a replacement for traditional zirconium alloy cladding owing to its high-temperature stability, chemical inertness, and exceptional irradiation resistance. An important task is the development of characterization techniques for SiC/SiC cladding, since traditional work using rectangular bars or disks cannot directly provide useful information on the properties of SiC/SiC composite tubes for fuel cladding applications. At Oak Ridge National Laboratory, experimental capabilities are under development to characterize the modulus, microcracking, and hermeticity of as-fabricated, as-irradiated SiC/SiC composite tubes. Resonant ultrasound spectroscopy has been validated as a promising technique to evaluate the elastic properties of SiC/SiC composite tubes and microcracking within the material. A similar technique, impulse excitation, is efficient in determining the basic mechanical properties of SiC bars prepared by chemical vapor deposition; it also has potential for application in studying the mechanical properties of SiC/SiC composite tubes. Complete evaluation of the quality of the developed coatings, a major mitigation strategy against gas permeation and hydrothermal corrosion, requires the deployment of various experimental techniques, such as scratch indentation, tensile pulling-off tests, and scanning electron microscopy. In addition, a comprehensive permeation test station is being established to assess the hermeticity of SiC/SiC composite tubes and to determine the H/D/He permeability of SiC/SiC composites. This report summarizes the current status of the development of these experimental capabilities.

  4. ProTEK PSB as Biotechnology Photosensitive Protection Mask on 3C-SiC-on-Si in MEMS Sensor

    Science.gov (United States)

    Marsi, N.; Majlis, B. Y.; Mohd-Yasin, F.; Hamzah, A. A.; Mohd Rus, A. Z.

    2016-11-01

    This project presents the fabrication of MEMS employing a cubic silicon carbide (3C- SiC) on silicon wafer using newly developed ProTEK PSB as biotechnology photosensitive protection mask. This new biotechnology can reduce the number of processes and simplify the process flow with minimal impact on overall undercut performance. The 680 pm thick wafer is back-etched, leaving the 3C-SiC thin film with a thickness of 1.0 μm as the flexible diaphragm to detect pressure. The effect of the new coating of ProTEK PSB on different KOH solvents were investigated depending on various factors such as development time, final cure temperature and the thickness of the ProTEK PSB deposited layer. It is found that 6.174 μm thickness of ProTEK PSB offers some possibility of reducing the processing time compared to silicon nitride etch masks in KOH (55%wt, 80°C). The new ProTEK PSB biotechnology photosensitive protection mask indicates good stability and sustains its performance in different treatments under KOH and IPA for 8 hours. This work also revealed that the fabrication of MEMS sensors using the new biotechnology photosensitive protection mask provides a simple assembly approach and reduces manufacturing costs. The MEMS sensor can operate up to 500 °C as indicated under the sensitivity of 0.826 pF/MPa with nonlinearity and hysteresis of 0.61% and 3.13%, respectively.

  5. Composite films of highly ordered Si nanowires embedded in SiGe0.3 for thermoelectric applications

    Science.gov (United States)

    Kikuchi, Akiou; Yao, Akifumi; Mori, Isamu; Ono, Takahito; Samukawa, Seiji

    2017-10-01

    We fabricated a high-density array of silicon nanowires (SiNWs) with a diameter of 10 nm embedded in silicon germanium (SiGe0.3) to give a composite thin film for thermoelectric device applications. The SiNW array was first fabricated by bio-template mask and neutral beam etching techniques. The SiNW array was then embedded in SiGe0.3 by thermal chemical vapor deposition. The cross-plane thermal conductivity of the SiNW-SiGe0.3 composite film with a thickness of 100 nm was 3.5 ± 0.3 W/mK in the temperature range of 300-350 K. Moreover, the temperature dependences of the in-plane electrical conductivity and in-plane Seebeck coefficient of the SiNW-SiGe0.3 composite were evaluated. The fabricated SiNW-SiGe0.3 composite film displayed a maximum power factor of 1 × 103 W/m K2 (a Seebeck coefficient of 4.8 × 103 μV/K and an electrical conductivity of 4.4 × 103 S/m) at 873 K. The present high-density SiNW array structure represents a new route to realize practical thermoelectric devices using mature Si processes without any rare metals.

  6. Phase transformation in SiO{sub x}/SiO{sub 2} multilayers for optoelectronics and microelectronics applications

    Energy Technology Data Exchange (ETDEWEB)

    Roussel, M. [Groupe de Physique des Matériaux, Université et INSA de Rouen, UMR CNRS 6634, Avenue de l' Université, BP 12, 76801 Saint Etienne du Rouvray, France, Europe (France); Talbot, E., E-mail: etienne.talbot@univ-rouen.fr [Groupe de Physique des Matériaux, Université et INSA de Rouen, UMR CNRS 6634, Avenue de l' Université, BP 12, 76801 Saint Etienne du Rouvray, France, Europe (France); Pratibha Nalini, R.; Gourbilleau, F. [Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), CEA/CNRS/ENSICAEN/UCBN, 6 Bd. Maréchal Juin, 14050 Caen Cedex 4, France, Europe (France); Pareige, P. [Groupe de Physique des Matériaux, Université et INSA de Rouen, UMR CNRS 6634, Avenue de l' Université, BP 12, 76801 Saint Etienne du Rouvray, France, Europe (France)

    2013-09-15

    Due to the quantum confinement, silicon nanoclusters (Si-ncs) embedded in a dielectric matrix are of prime interest for new optoelectronics and microelectronics applications. In this context, SiO{sub x}/SiO{sub 2} multilayers have been prepared by magnetron sputtering and subsequently annealed to induce phase separation and Si clusters growth. The aim of this paper is to study phase separation processes and formation of nanoclusters in SiO{sub x}/SiO{sub 2} multilayers by atom probe tomography. Influences of the silicon supersaturation, annealing temperature and SiO{sub x} and SiO{sub 2} layer thicknesses on the final microstructure have been investigated. It is shown that supersaturation directly determines phase separation regime between nucleation/classical growth and spinodal decomposition. Annealing temperature controls size of the particles and interface with the surrounding matrix. Layer thicknesses directly control Si-nc shapes from spherical to spinodal-like structures. - Highlights: ► SiO{sub x}/SiO{sub 2} multilayers containing Si-ncs have been characterized using atom probe. ► Influence of SiO{sub x} composition on decomposition mode has been investigated. ► Influence of sublayer thicknesses on phase separation has been studied.

  7. Microscopic observation of lateral diffusion at Si-SiO 2 interface by photoelectron emission microscopy using synchrotron radiation

    Science.gov (United States)

    Hirao, N.; Baba, Y.; Sekiguchi, T.; Shimoyama, I.; Honda, M.

    2011-11-01

    The lateral surface diffusion at Si-SiO2 interface has been observed at nanometer scale using photoelectron emission microscopy (PEEM) combined with synchrotron soft X-ray excitation. The samples investigated were Si-SiOx micro-patterns prepared by O2+ ion implantation in Si (0 0 1) wafer using a mask. The lateral spacial resolution of the PEEM system was about 41 nm. The brightness of each spot in the PEEM images changed depending on the photon energy around the Si K-edge, in proportion to the X-ray absorption intensity of the corresponding valence states. It was found that the lateral diffusion occurs by 400-450 °C lower temperature than that reported for the longitudinal diffusion at the Si-SiO2 interface. It was also found that no intermediate valence states such as SiO (Si2+) exist at the Si-SiO2 interface during the diffusion. The observed differences between lateral and longitudinal diffusion are interpreted by the sublimated property of silicon monoxide (SiO).

  8. Predicting siRNA efficacy based on multiple selective siRNA representations and their combination at score level

    Science.gov (United States)

    He, Fei; Han, Ye; Gong, Jianting; Song, Jiazhi; Wang, Han; Li, Yanwen

    2017-03-01

    Small interfering RNAs (siRNAs) may induce to targeted gene knockdown, and the gene silencing effectiveness relies on the efficacy of the siRNA. Therefore, the task of this paper is to construct an effective siRNA prediction method. In our work, we try to describe siRNA from both quantitative and qualitative aspects. For quantitative analyses, we form four groups of effective features, including nucleotide frequencies, thermodynamic stability profile, thermodynamic of siRNA-mRNA interaction, and mRNA related features, as a new mixed representation, in which thermodynamic of siRNA-mRNA interaction is introduced to siRNA efficacy prediction for the first time to our best knowledge. And then an F-score based feature selection is employed to investigate the contribution of each feature and remove the weak relevant features. Meanwhile, we encode the siRNA sequence and existed empirical design rules as a qualitative siRNA representation. These two kinds of siRNA representations are combined to predict siRNA efficacy by supported Vector Regression (SVR) at score level. The experimental results indicate that our method may select the features with powerful discriminative ability and make the two kinds of siRNA representations work at full capacity. The prediction results also demonstrate that our method can outperform other popular siRNA efficacy prediction algorithms.

  9. siRNA as an alternative therapy against viral infections

    Directory of Open Access Journals (Sweden)

    Hana A. Pawestri

    2012-07-01

    Full Text Available siRNA (small interfering ribonucleic acid adalah sebuah metode yang dapat digunakan untuk mengatasi infeksi virus yang prinsip kerjanya berdasarkan metode komplementer dsRNA (double stranded RNA pada RNA virus sehingga menyebabkan kegagalan proses transkripsi (silencing.  Untuk lebih memahami bagaimana proses kerja dan ulasan penelitian siRNA yang terkini, di dalam tulisan ini ditinjau siRNA sebagai metoda yang dikembangkan untuk mengatasi infeksi dan meneliti efeknya pada replikasi beberapa virus seperti Hepatitis C, Influenza, Polio, dan HIV. Kami menemukan bahwa urutan basa nukleotida dari target siRNA sangat penting. Hal tersebut harus homolog dengan target RNA virus dan tidak menganggu RNA sel inang. Untuk mengurangi kegagalan terapi siRNA oleh adanya mutasi, digunakan beberapa siRNA yang sekaligus menjadi target RNA virus yang berbeda. Namun demikian, terapi siRNA masih menghadapi beberapa kesulitan seperti pengiriman (transfer khusus ke jaringan yang terinfeksi dan perlindungan siRNA dari perusakan oleh nuklease. Berdasarkan beberapa penelitian yang telah dilakukan, siRNA dapat digunakan sebagai alternatif untuk mengobati infeksi yang disebabkan oleh virus. Terapi tersebut direkomendasikan untuk dilakukan uji klinis dengan memperhatikan beberapa aspek seperti desain siRNA dan mekanisme transfer. (Health Science Indones 2010; 1: 58 - 65 Kata kunci: siRNA, infeksi virus, target virus, alternatif terapi Abstract SiRNA is a promising method to deal with viral infections. The principle of siRNA is based on the complementarily of (synthetic dsRNA to an RNA virus which, in consequence, will be silenced. Many studies are currently examining the effects of siRNA on replication of diverse virus types like Hepatitis C, polio and HIV. The choice of the siRNA target sequence is crucial. It has to be very homologous to the target RNA, but it cannot target RNA of the host cell. To reduce the possibility for the virus to escape from the siRNA therapy by

  10. Flexible, polymer-supported, Si wire array photoelectrodes

    Energy Technology Data Exchange (ETDEWEB)

    Spurgeon, Joshua M.; Boettcher, Shannon W.; Brunschwig, Bruce S.; Lewis, Nathan S. [California Institute of Technology, Division of Chemistry and Chemical Engineering, Pasadena, CA (United States); Kelzenberg, Michael D.; Atwater, Harry A. [California Institute of Technology, Division of Engineering and Applied Science, Pasadena, CA (United States)

    2010-08-10

    Arrays of oriented, crystalline Si wires are transferred into flexible, transparent polymer films. The polymer-supported Si wire arrays in liquid-junction photoelectrochemical cells yield current-potential behavior similar to the Si wires attached to the brittle growth substrate. These systems offer the potential for attaining high solar energy-conversion efficiencies using modest diffusion length, readily grown, crystalline Si in a flexible, processable form. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  11. Fluorescent SiC for white light-emitting diodes

    DEFF Research Database (Denmark)

    Ou, Haiyan; Ou, Yiyu; Kamiyama, S.

    2012-01-01

    The strong photoluminescence from f-SiC was achieved after the optimization of the B and N concentrations. Surface nanostructures were successfully applied to enhance the extraction efficiency. f-SiC is a promising wavelength convertor for white LEDs.......The strong photoluminescence from f-SiC was achieved after the optimization of the B and N concentrations. Surface nanostructures were successfully applied to enhance the extraction efficiency. f-SiC is a promising wavelength convertor for white LEDs....

  12. The Geography of the ta-ra-si-ja

    DEFF Research Database (Denmark)

    Nosch, Marie-Louise Bech

    2000-01-01

    Thies paper demonstrates how ta-ra-si-ja is connected to a fixed series of toponyms in Crete, and concludes that ta-ra-si-ja is a duty limited to certain places......Thies paper demonstrates how ta-ra-si-ja is connected to a fixed series of toponyms in Crete, and concludes that ta-ra-si-ja is a duty limited to certain places...

  13. Surface passivation of n-type c-Si wafers by a-Si/SiO2/SiNx stack with <1 cm/s effective surface recombination velocity

    Science.gov (United States)

    Herasimenka, Stanislau Y.; Tracy, Clarence J.; Sharma, Vivek; Vulic, Natasa; Dauksher, William J.; Bowden, Stuart G.

    2013-10-01

    The passivation quality of an a-Si/SiO2/SiNx (aSON) stack deposited by conventional PECVD at corona charging of SiNx is presented. textured n-type Czochralski (CZ) substrates. It was shown that very good passivation can be achieved using 60 ms on 5000 Ω-cm and 20.9 ms on 1.7 Ω-cm mirror polished float zone (FZ) material passivated with aSON stacks.

  14. Evolution of a novel Si-18Mn-16Ti-11P alloy in Al-Si melt and its influence on microstructure and properties of high-Si Al-Si alloy

    Directory of Open Access Journals (Sweden)

    Xiao-Lu Zhou

    Full Text Available A novel Si-18Mn-16Ti-11P master alloy has been developed to refine primary Si to 14.7 ± 1.3 μm, distributed uniformly in Al-27Si alloy. Comparing with traditional Cu-14P and Al-3P, Si-18Mn-16Ti-11P provided a much better refining effect, with in-situ highly active AlP. The refined Al-27Si alloy exhibited a CTE of 16.25 × 10−6/K which is slightly higher than that of Sip/Al composites fabricated by spray deposition. The UTS and elongation of refined Al-27Si alloy were increased by 106% and 235% comparing with those of unrefined alloy. It indicates that the novel Si-18Mn-16Ti-11P alloy is more suitable for high-Si Al-Si alloys and may be a candidate for refining hypereutectic Al-Si alloy for electronic packaging applications. Moreover, studies showed that TiP is the only P-containing phase in Si-18Mn-16Ti-11P master alloy. A core-shell reaction model was established to reveal mechanism of the transformation of TiP to AlP in Al-Si melts. The transformation is a liquid-solid diffusion reaction driven by chemical potential difference and the reaction rate is controlled by diffusion. It means sufficient holding time is necessary for Si-18Mn-16Ti-11P master alloy to achieve better refining effect. Keywords: Hypereutectic Al-Si alloy, Primary Si, Refinement, AlP, Thermal expansion behavior, Si-18Mn-16Ti-11P master alloy

  15. Observation of excited state in 41Si

    International Nuclear Information System (INIS)

    Sohler, D.; Dombradi, Zs.; Grevy, S.; Sorlin, O.; Azaiez, F.; Baiborodin, D.; Borcea, R.

    2007-01-01

    Complete text of publication follows. Recently, the collapse of the Z=14 and N=28 shell closures has been revealed in very neutron-rich Si and P nuclei [1]. In order to further explore the behaviour of these shell gaps, we studied the excited states of 41 Si by in-beam γ-ray spectroscopy from fragmentation of radioactive beams. The experiment was carried out at the GANIL facility, France. First a stabil 4μA 48 Ca beam at 60 MeV/u was fragmented on a 12 C target in the SISSI device. The primary reaction products were selected by measuring their energy loss and time-of-flight at the ALPHA spectrometer. The cocktail beam impinged onto a secondary 9 Be target placed in the dispersive focal plane of the SPEG spectrometer which was tuned to maximise the transmission of 42 Si. The secondary reaction products were unambiguously identified by their ΔE and positions determined by ionisation and drift chambers, furthermore by their TOF and residual energies measured by a plastic scintillator at the focal plane of SPEG. To detect γ rays, the secondary target was surrounded by an 4π array of 74 BaF 2 scintillators. The γ-ray spectra were obtained by selecting event-by-event the incoming nuclei and the ejectiles after the secondary target. The γ rays were corrected for Doppler shifts due to the in-flight emission by the fragments. As it can be seen in figure 1, a clear peak on a low background at 659±14 keV energy appears in the γ-ray spectrum of 41 Si. This finding is in accordance with the 770 keV energy of the first 2 + excited state in 42 Si with N=28 and Z=14. Along the N=28 isobaric line the next double magic nucleus is 48 Ca. In the neighbouring odd-N nucleus 47 Ca the energy of the first excited state was measured to be 2014 keV. Comparing with that of 47 Ca the low energy value of the first excited state obtained in 41 Si can be interpreted as a further indication of the disappearance of the N=28 spherical shell closure at Z=14

  16. Incorporating Si3 N4 into PEEK to Produce Antibacterial, Osteocondutive, and Radiolucent Spinal Implants.

    Science.gov (United States)

    Pezzotti, Giuseppe; Marin, Elia; Adachi, Tetsuya; Lerussi, Federica; Rondinella, Alfredo; Boschetto, Francesco; Zhu, Wenliang; Kitajima, Takashi; Inada, Kosuke; McEntire, Bryan J; Bock, Ryan M; Bal, B Sonny; Mazda, Osam

    2018-04-24

    Polyetheretherketone (PEEK) is a popular polymeric biomaterial which is primarily used as an intervertebral spacer in spinal fusion surgery; but it is developed for trauma, prosthodontics, maxillofacial, and cranial implants. It has the purported advantages of an elastic modulus which is similar to native bone and it can be easily formed into custom 3D shapes. Nevertheless, PEEK's disadvantages include its poor antibacterial resistance, lack of bioactivity, and radiographic transparency. This study presents a simple approach to correcting these three shortcomings while preserving the base polymer's biocompatibility, chemical stability, and elastic modulus. The proposed strategy consists of preparing a PEEK composite by dispersing a minor fraction (i.e., 15 vol%) of a silicon nitride (Si 3 N 4 ) powder within its matrix. In vitro tests of PEEK composites with three Si 3 N 4 variants-β-Si 3 N 4 , α-Si 3 N 4 , and β-SiYAlON-demonstrate significant improvements in the polymer's osteoconductive versus SaOS-2 cells and bacteriostatic properties versus gram-positive Staphylococcus epidermidis bacteria. These properties are clearly a consequence of adding the bioceramic dispersoids, according to chemistry similar to that previously demonstrated for bulk Si 3 N 4 ceramics in terms of osteogenic behavior (vs both osteosarcoma and mesenchymal progenitor cells) and antibacterial properties (vs both gram-positive and gram-negative bacteria). © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Liquid phase sintered SiC. Processing and transformation controlled microstructure tailoring

    Directory of Open Access Journals (Sweden)

    V.A. Izhevskyi

    2000-10-01

    Full Text Available Microstructure development and phase formation processes during sintering of silicon carbide based materials with AlN-Y2O3, AlN-Yb2O3, and AlN-La2O3 sintering additives were investigated. Densification of the materials occurred by liquid-phase sintering mechanism. Proportion of alpha- and beta-SiC powders in the initial mixtures was a variable parameter, while the molar ratio of AlN/RE2O3, and the total amount of additives (10 vol. % were kept constant. Shrinkage behavior during sintering in interrelation with the starting composition of the material and the sintering atmosphere was investigated by high temperature dilatometry. Kinetics of b-SiC to a-SiC phase transformation during post-sintering heat treatment at temperatures 1900-1950 °C was studied, the degree of phase transformation being determined by quantitative x-ray analysis using internal standard technique. Evolution of microstructure resulting from beta-SiC to alpha-SiC transformation was followed up by scanning electron microscopy on polished and chemically etched samples. Transformation-controlled grain growth mechanism similar to the one observed for silicon nitride based ceramics was established. Possibility of in-situ platelet reinforced dense SiC-based ceramics fabrication with improved mechanical properties by means of sintering was shown.

  18. The impact of SiC substrate treatment on the heteroepitaxial growth of GaN by plasma assisted MBE

    Energy Technology Data Exchange (ETDEWEB)

    Brown, A.S.; Kim, T.H.; Choi, S.; Morse, M.; Wu, P. [Department of Electrical and Computer Engineering, Duke University, Durham, NC 27709 (United States); Losurdo, M.; Giangregorio, M.M.; Capezzuto, P.; Bruno, G. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, and INSTM via Orabona 4 -70126, Bari (Italy)

    2005-11-01

    We report on the impact of the preparation of the Si-face 4H-SiC(0001){sub Si} substrate using a Ga flash-off process on the epitaxial growth of GaN by plasma-assisted molecular beam epitaxy. The nucleation, as well as the resultant structural and morphological properties of GaN grown directly on 4H-SiC(0001){sub Si} are strongly influenced by the chemical and morphological modifications of the SiC surface induced by the Ga flash-off process. Herein we describe the impact of the specific concentration of Ga incident on the surface (quantified in terms of monolayer (ML) coverage): of 0.5 ML, 1ML and 2ML. The residual oxygen at the SiC surface, unintentional SiC nitridation and the formation of cubic GaN grains during the initial nucleation stage, are all reduced when a 2 ML Ga flash is used. All of the above factors result in structural improvement of the GaN epitaxial layers. The correlation between the SiC surface modification, the initial nucleation stage, and the GaN epitaxial layer structural quality has been articulated using x-ray photoelectron spectroscopy, X-ray diffraction, atomic force microscopy and spectroscopic ellipsometry data. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Microstructure and properties of MoSi2-MoB and MoSi2-Mo5Si3 molybdenum silicides

    International Nuclear Information System (INIS)

    Schneibel, J.H.; Sekhar, J.A.

    2003-01-01

    MoSi 2 -based intermetallics containing different volume fractions of MoB or Mo 5 Si 3 were fabricated by hot-pressing MoSi 2 , MoB, and Mo 5 Si 3 powders in vacuum. Both classes of alloys contained approximately 5 vol.% of dispersed silica phase. Additions of MoB or Mo 5 Si 3 caused the average grain size to decrease. The decrease in the grain size was typically accompanied by an increase in flexure strength, a decrease in the room temperature fracture toughness, and a decrease in the hot strength (compressive creep strength) measured around 1200 deg. C, except when the Mo 5 Si 3 effectively became the major phase. Oxidation measurements on the two classes of alloys were carried out in air. Both classes of alloys were protected from oxidation by an in-situ adherent scale that formed on exposure to high temperature. The scale, although not analyzed in detail, is commonly recognized in MoSi 2 containing materials as consisting mostly of SiO 2 . The MoB containing materials showed an increase in the scale thickness and the cyclic oxidation rate at 1400 deg. C when compared with pure MoSi 2 . However, in contrast with the pure MoSi 2 material, oxidation at 1400 deg. C began with a weight loss followed by a weight gain and the formation of the protective silica layer. The Mo 5 Si 3 containing materials experienced substantial initial weight losses followed by regions of small weight changes. Overall, the MoB and Mo 5 Si 3 additions to MoSi 2 tended to be detrimental for the mechanical and oxidative properties

  20. Thermodynamics of the Si-O-H System

    Science.gov (United States)

    Jacobson, Nathan S.; Opila, Elizabeth J.; Myers, Dwight; Copland, Evan

    2004-01-01

    Thermodynamic functions for Si(OH)4(g) and SiO(OH)2(g) have been measured using the transpiration method. A second law enthalpy of formation and entropy and a third law enthalpy of formation has been calculated for Si(OH)4. The results are in very good agreement with previous experimental measurements, ab-initio calculations, and estimates.

  1. Microstructure and mechanical properties of SiC materials

    International Nuclear Information System (INIS)

    Yarahmadi, M.

    1985-01-01

    The effect of the microstructure on the mechanical properties of SiC materials of different chemical composition (SSiC, SiSiC, and RSiC) was investigated. Furthermore, the creep strength was determined on oxidized samples and on non-pretreated samples. (HSCH)

  2. Local atomic structure and chemical order in amorphous SiGe:H and SiC:H alloys

    International Nuclear Information System (INIS)

    Pisarkiewicz, T.; Stapinski, T.

    1994-01-01

    The local structure and chemical ordering in amorphous hydrogenated silicon-germanium and silicon-carbon alloys were analyzed mainly with the help of extended x-ray absorption fine structure (EXAFS) spectroscopy, Raman scattering and electron diffraction. Ge-Ge and Ge-Si distances were found to be independent of concentration and the composition of the first coordination shell around Ge is consistent with a random mixing of the two species in a-Si 1-x Ge:H alloy. The first-coordination-shell average bond lengths for Si-Si and SiC in a-Si 1-x C x :H are also constant with concentration x and the comparison of the first coordination shell composition around Si with average concentration indicates that the alloys tends to be chemically ordered. The degree of crystallinity in microcrystalline Si films determined by EXAFS is in agreement with that obtained in Raman scattering analysis. (author). 16 refs, 5 figs

  3. Porous anodic alumina on galvanically grown PtSi layer for application in template-assisted Si nanowire growth

    Directory of Open Access Journals (Sweden)

    Stavrinidou Eleni

    2011-01-01

    Full Text Available Abstract We report on the fabrication and morphology/structural characterization of a porous anodic alumina (PAA/PtSi nano-template for use as matrix in template-assisted Si nanowire growth on a Si substrate. The PtSi layer was formed by electroless deposition from an aqueous solution containing the metal salt and HF, while the PAA membrane by anodizing an Al film deposited on the PtSi layer. The morphology and structure of the PtSi layer and of the alumina membrane on top were studied by Scanning and High Resolution Transmission Electron Microscopies (SEM, HRTEM. Cross sectional HRTEM images combined with electron diffraction (ED were used to characterize the different interfaces between Si, PtSi and porous anodic alumina.

  4. Semipolar AlN and GaN on Si(100): HVPE technology and layer properties

    Science.gov (United States)

    Bessolov, V.; Kalmykov, A.; Konenkova, E.; Kukushkin, S.; Myasoedov, A.; Poletaev, N.; Rodin, S.

    2017-01-01

    Hydride vapor phase epitaxy (HVPE) growth of semipolar AlN and GaN layers on planar Si(100) substrates with SiC nanolayer is investigated. It is shown experimentally that the solid-phase epitaxial formation of a specially oriented SiC nucleation layer followed by epitaxy of AlN layer by HVPE at low rates enables growth of aluminum and gallium nitrides in the semipolar direction. For the best GaN(20-23) layers obtained, the full width at half maximum (FWHM) value for the x-ray diffraction rocking curve is 24 arcmin. The photoluminescence spectrum of the semipolar GaN measured at 4 K exhibits bands related to basal-plane and prismatic stacking faults (BSF and PSF).

  5. Structural and optical characterization of GaN heteroepitaxial films on SiC substrates

    Energy Technology Data Exchange (ETDEWEB)

    Morse, M. [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States) and Department of Physics, Duke University, 128 Hudson Hall, Durham, NC (United States)]. E-mail: michael.morse@duke.edu; Wu, P. [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States); Department of Physics, Duke University, 128 Hudson Hall, Durham, NC (United States); Choi, S. [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States); Department of Physics, Duke University, 128 Hudson Hall, Durham, NC (United States); Kim, T.H. [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States); Department of Physics, Duke University, 128 Hudson Hall, Durham, NC (United States); Brown, A.S. [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States) and Department of Physics, Duke University, 128 Hudson Hall, Durham, NC (United States)]. E-mail: abrown@ee.duke.edu; Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona, 4-70126 Bari (Italy); Bruno, G. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona, 4-70126 Bari (Italy)

    2006-10-31

    We have estimated the threading dislocation density and type via X-ray diffraction and Williamson-Hall analysis to elicit qualitative information directly related to the electrical and optical quality of GaN epitaxial layers grown by PAMBE on 4H- and 6H-SiC substrates. The substrate surface preparation and buffer choice, specifically: Ga flashing for SiC oxide removal, controlled nitridation of SiC, and use of AlN buffer layers all impact the resultant screw dislocation density, but do not significantly influence the edge dislocation density. We show that modification of the substrate surface strongly affects the screw dislocation density, presumably due to impact on nucleation during the initial stages of heteroepitaxy.

  6. Photoluminescence signature of resonant energy transfer in ZnO coated Si nanocrystals decorated on vertical Si nanowires array

    Energy Technology Data Exchange (ETDEWEB)

    Ghosh, Ramesh [Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039 (India); Giri, P.K., E-mail: giri@iitg.ernet.in [Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039 (India); Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati 781039 (India); Imakita, Kenji; Fujii, Minoru [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501 (Japan)

    2015-07-25

    Highlights: • Si nanowires (NWs) array decorated with Si nanocrystals (NCs) are fabricated by metal assisted chemical etching method. • Coating of Si NWs/ NCs with thin ZnO layer changes the photoluminescence (PL) lifetime and PL peak position. • It is argued that resonant energy transfer from ZnO to Si NCs is responsible for the observed changes in PL. • Si-based hybrid optoelectronic device with tunable and broadband emission is demonstrated. - Abstract: We investigate the mechanism of red shift in photoluminescence (PL) and reduction in the PL lifetime from Si nanocrystals (NCs) decorated on vertical Si nanowires (NWs) array due to ZnO over layer coating. Arrays of vertically aligned single crystalline Si NWs decorated with arbitrary shaped Si NCs have been fabricated by a silver assisted wet chemical etching method. A strong broad band and tunable visible to near-infrared PL is observed from these Si NWs at room temperature and the Si NCs on the surface of the Si NWs are primarily responsible for the PL emission. Higher band gap ZnO film is sputter deposited on the Si NCs decorated Si NWs to form heterostructure. Bare Si NW/NCs and Si NCs/ZnO heterostructures show extremely high broad band absorption in the entire visible region. PL studies on the Si NCs/ZnO heterostructures reveal significant red shift and in some cases reduced intensity of the PL band due to the ZnO layer in close proximity of the Si NCs. This is accompanied by a reduction in the PL lifetime of the Si NCs after ZnO coating. Interestingly, no measurable red shift in PL is observed in absence of the resonance in the visible PL emission energy of ZnO and that of Si NCs. The modified PL from the heterostructures is explained through an energy band diagram on the basis of resonant energy transfer from the defect assisted recombination of the carries in the ZnO overlayer that excites the Si NCs in the close proximity and subsequent de-excitation process via radiative recombination. These

  7. Synthesis Of A Precursor Of Silicon Nitride

    Science.gov (United States)

    Philipp, Warren H.; Cornell, Linda; Lin, Y. C.

    1994-01-01

    Promising route toward production of highly pure, finely divided, easily sinterable silicon nitride (Si3N4) involves thermal decomposition of silicon diimide {Si(NH)2} prepared by ammonolysis of Si(SCN)4 in CH3CN and purified by complete extraction of byproduct NH4SCN by use of ammonia at temperature and pressure above critical point.

  8. Si micro photonics for optical interconnection

    International Nuclear Information System (INIS)

    Wada, K.; Ahn, D.H.; Lim, D.R.; Michel, J.; Kimerling, L.C.

    2006-01-01

    This paper reviews current status of silicon microphotonics and the recent prototype of on-chip optical interconnection. Si microphotonics pursues complementary metal oxide semiconductor (CMOS)-compatibility of photonic devices to reduce the materials diversity eventually to integrate on Si chips. Fractal optical H-trees have been implemented on a chip and found to be a technology breakthrough beyond metal interconnection. It has shown that large RC time constants associated with metal can be eliminated at least long distant data communication on a chip, and eventually improve yield and power issues. This has become the world's first electronic and photonic integrated circuits (EPICs) and the possibility of at least 10 GHz clocking for personal computers has been demonstrated

  9. Dendrimers for siRNA Delivery

    Directory of Open Access Journals (Sweden)

    Swati Biswas

    2013-02-01

    Full Text Available Since the discovery of the “starburst polymer”, later renamed as dendrimer, this class of polymers has gained considerable attention for numerous biomedical applications, due mainly to the unique characteristics of this macromolecule, including its monodispersity, uniformity, and the presence of numerous functionalizable terminal groups. In recent years, dendrimers have been studied extensively for their potential application as carriers for nucleic acid therapeutics, which utilize the cationic charge of the dendrimers for effective dendrimer-nucleic acid condensation. siRNA is considered a promising, versatile tool among various RNAi-based therapeutics, which can effectively regulate gene expression if delivered successfully inside the cells. This review reports on the advancements in the development of dendrimers as siRNA carriers.

  10. The National Si-Soft Project

    International Nuclear Information System (INIS)

    Chang, C.-Y.; Trappey, Charles V.

    2003-01-01

    Taiwan's electronics industry emerged in the 1960s with the creation of a small but well planned integrated circuit (IC) packaging industry. This industry investment led to bolder investments in research, laboratories, and the island's first semiconductor foundries in the 1980s. Following the success of the emerging IC manufacturers and design houses, hundreds of service firms and related industries (software, legal services, substrate, chemical, and test firms among others) opened for business and completed Taiwan's IC manufacturing supply chain. The challenge for Taiwan's electronics industry is to take the lead in the design, manufacture, and marketing of name brand electronic products. This paper introduces the Si-Soft (silicon software) Project, a national initiative that builds on Taiwan's achievements in manufacturing (referred to as Si-Hard or silicon hardware) to launch a new wave of companies. These firms will contribute to the core underlying technology (intellectual property) used in the creation of electronic products

  11. Stress-induced indirect to direct band gap transition in β-FeSi2 nanocrystals embedded in Si

    Science.gov (United States)

    Shevlyagin, A. V.; Goroshko, D. L.; Chusovitin, E. A.; Balagan, S. A.; Dotsenko, S. A.; Galkin, K. N.; Galkin, N. G.; Shamirzaev, T. S.; Gutakovskii, A. K.; Iinuma, M.; Terai, Y.

    2017-09-01

    Embedded in silicon β-FeSi2 nanocrystals (NCs) were grown on Si(111) by solid phase epitaxy of a thin iron film followed by Si molecular beam epitaxy. After solid phase epitaxy, a mixture of β-FeSi2 and ɛ-FeSi nanocrystals is formed on the surface, sometimes β and ɛ phases coexist inside one nanocrystal. During initial stage of Si molecular beam epitaxy all ɛ-FeSi transforms into β-FeSi2. β-FeSi2 nanocrystals tend to move following Si growth front. By adjusting growth condition, we manage to prevent the nanocrystals from moving and to fabricate 7-layer n-Si(111)/β-FeSi2_NCs/p+-Si silicon heterostructure with embedded β-FeSi2 NCs. An epitaxial relationship and a stress induced in the nanocrystals by silicon matrix were found to be suitable for indirect to direct band gap transition in β-FeSi2. Of the heterostructure, a n-i-p avalanche photodetector and a light-emitting diode were formed. They have shown relatively good performance: ultrabroadband photoresponse from the visible (400 nm) to short-wavelength infrared (1800 nm) ranges owing to quantum-confined Stark effect in the nanocrystals and optical emission power of up to 25 µW at 9 A/cm2 with an external quantum efficiency of 0.009% at room temperature owing to a direct fundamental transition in stressed β-FeSi2 nanocrystals.

  12. CMOS Compatible Nonvolatile Memory Devices Based on SiO2/Cu/SiO2 Multilayer Films

    Science.gov (United States)

    Wang, Yan; Liu, Qi; Lu, Hang-Bing; Long, Shi-Bing; Zhang, Sen; Li, Ying-Tao; Lian, Wen-Tai; Yang, Jian-Hong; Liu, Ming

    2011-07-01

    We systematically investigate the resistive switching characteristics of SiO2 films with a Cu/SiO2/Cu/SiO2/Pt multilayer structure. The device exhibits good resistive switching performances, including a high ON/OFF resistance ratio (>103), good retention characteristic (>104s), satisfactory switching endurance (>200 cycles), a fast programming speed (<100 ns) and a high device yield (~100%). Considering these results, SiO2-based memories have highly promising applications for nonvolatile memory devices.

  13. Structural and electronic properties of Si nanocrystals embedded in amorphous SiC matrix

    International Nuclear Information System (INIS)

    Song Chao; Rui Yunjun; Wang Quanbiao; Xu Jun; Li Wei; Chen Kunji; Zuo Yuhua; Wang Qiming

    2011-01-01

    Research highlights: → Amorphous silicon carbide thin films were annealed at 900 deg. C and 1000 deg. C to form Si nanocrystals embedded in amorphous SiC matrix. The average size of Si nanocrystals is around 7-9 nm. For the sample annealed at 1000 o C, the crystallinity can be reached to 70%. → As increasing the annealing temperature, the dark conductivity is increased accompanying with the increase of crystallinity of the film. The dark conductivity reaches to 1.2 x 10 -6 S cm -1 for the sample annealed at 1000 o C, which is 4 orders of magnitude higher than that of as-deposited film. → The possible transport mechanism was proposed and discussed. The temperature-dependent conductivity results reveal that the carrier transport process is dominated by the thermally activated transport process. - Abstract: Si-rich hydrogenated amorphous silicon carbide thin films were prepared by plasma-enhanced chemical vapor deposition technique. As-deposited films were subsequently annealed at 900 deg. C and 1000 deg. C to form Si nanocrystals embedded in amorphous SiC matrix. Raman spectra demonstrate the formation of Si nanocrystals with size around 7-9 nm. For the sample annealed at 1000 o C, the crystallinity can be reached to 70%. As increasing the annealing temperature, the dark conductivity is increased accompanying with the increase of crystallinity of the film. The dark conductivity reaches to 1.2 x 10 -6 S cm -1 for the sample annealed at 1000 deg. C, which is 4 orders of magnitude higher than that of as-deposited film. It is found that the carrier transport process is dominated by the thermally activated transport process according to the temperature-dependent conductivity results.

  14. In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Hestroffer, K.; Daudin, B. [CEA-CNRS Group (Nanophysique et Semiconducteurs), Universite Joseph Fourier and CEA Grenoble, INAC, SP2M, 17 rue des Martyrs, 38054 Grenoble (France); Leclere, C.; Renevier, H. [Laboratoire des Materiaux et du Genie Physique, Grenoble INP--MINATEC, 3 parvis L. Neel, 38016 Grenoble (France); Cantelli, V. [' ' Nanostructures et Rayonnement Synchrotron' ' Group, CEA Grenoble, INAC, SP2M, 17 rue des Martyrs, 38054 Grenoble (France); Fondation Nanosciences, 23 rue des Martyrs, 38000 Grenoble (France); Bougerol, C. [CEA-CNRS Group, ' ' Nanophysique et Semiconducteurs' ' , Institut Neel, CNRS and Universite Joseph Fourier, BP 166, F-38042 Grenoble Cedex 9 (France)

    2012-05-21

    Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy is studied through a combination of two in situ tools: grazing incidence x-ray diffraction and reflection high energy electron diffraction. Growth on bare Si(111) and on AlN/Si(111) is compared. A significantly larger delay at nucleation is observed for nanowires grown on bare Si(111). The difference in the nucleation delay is correlated to a dissimilarity of chemical reactivity between Al and Ga with nitrided Si(111).

  15. Fe{sub 3}Si nanodots epitaxially grown on Si(111) substrates using ultrathin SiO{sub 2} film technique

    Energy Technology Data Exchange (ETDEWEB)

    Nakamura, Yoshiaki, E-mail: nakamura@ee.es.osaka-u.ac.jp [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Fukuda, Kenjiro; Amari, Shogo; Ichikawa, Masakazu [Department of Applied Physics, School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2011-10-03

    Ultrahigh density (> 10{sup 12} cm{sup -2}) Fe{sub 3}Si nanodots (NDs) are epitaxially grown on Si(111) substrates by codeposition of Fe and Si on the ultrathin SiO{sub 2} films with ultrahigh density nanovoids. We used two kinds of methods for epitaxial growth: molecular beam epitaxy (MBE) and solid phase epitaxy. For MBE, low temperature (< 300 deg. C) growth of the Fe{sub 3}Si NDs is needed to suppress the interdiffusion between Fe atoms deposited on the surfaces and Si atoms in the substrate. These epitaxial NDs exhibited the ferromagnetism at low temperatures, which were expected in terms of the application to the magnetic memory device materials.

  16. Metalorganic chemical vapor deposition of {beta}-FeSi{sub 2} on {beta}-FeSi{sub 2} seed crystals formed on Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Suzuno, Mitsushi; Akutsu, Keiichi; Kawakami, Hideki [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573 (Japan); Akiyama, Kensuke [Kanagawa Industrial Technology Center 705-1 Shimoizumi, Ebina, Kanagawa 243-0435 (Japan); Suemasu, Takashi, E-mail: suemasu@bk.tsukuba.ac.jp [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573 (Japan)

    2011-10-03

    We have fabricated a {beta}-FeSi{sub 2} film by metalorganic chemical vapor deposition on a Si(001) substrate with {beta}-FeSi{sub 2} seed crystals grown by molecular beam epitaxy, and investigated the crystallinity, surface morphology and temperature dependence of photoresponse properties of the {beta}-FeSi{sub 2} film. The surface of the grown {beta}-FeSi{sub 2} film was atomically flat, and step-and-terrace structure was clearly observed. Multi-domain structure of {beta}-FeSi{sub 2} whose average size was approximately 200 nm however was revealed. The photoresponse was obtained in an infrared light region ({approx} 0.95 eV) at temperatures below 200 K. The external quantum efficiency reached a maximum, being as large as 25% at 100 K when a bias voltage was 2.0 V.

  17. Microscopic observation of lateral and vertical charge transportation in Si nanocrystals sandwiched by amorphous SiC layers

    Science.gov (United States)

    Xu, Jie; Ji, Yang; Lu, Peng; Bai, Gang; Ren, Qingying; Xu, Jun

    2018-01-01

    Charge injection and transportation process is a fundamental problem to Si nanocrystals (Si-ncs) based electric and photonic devices. In the manuscript, a single layer of Si-ncs sandwiched by amorphous Si carbide (a-SiC) was prepared by excimer laser annealing of a-SiC/a-Si/a-SiC multilayers, and the charging effect was then characterized by Kelvin probe force microscopy (KPFM) on the microscopic scale. Opposite charges were injected into Si-ncs through the biased tip and formed a core-ring or up-down shaped distribution. The decay characteristics showed that these opposite charges would not only vertically tunnel through the bottom a-SiC layer to substrate but also laterally transport and recombine with each other driven by the attractive Coulomb force. Besides, the charge retention time was also found dependent on the injection biases, which is tentatively ascribed to the charge trapping by the Si-ncs/a-SiC interface states under high bias scanning. The analysis was further supported by conductive atomic force microscopy (CAFM) measurement, in which the current-voltage curves gradually shifted during the repetition test, probably because of bias screening by the trapped charges at these interface states.

  18. Ge self-assembled islands grown on SiGe/Si(0 0 1) relaxed buffer layers

    International Nuclear Information System (INIS)

    Shaleev, M.V.; Novikov, A.V.; Kuznetsov, O.A.; Yablonsky, A.N.; Vostokov, N.V.; Drozdov, Yu.N.; Lobanov, D.N.; Krasilnik, Z.F.

    2005-01-01

    In this work, the results obtained in growth of Ge(Si) self-assembled islands on relaxed Si 1-x Ge x /Si(0 0 1) buffer layers (x ∼ 25%) and their photoluminescence study are presented. It is found out that growth of Ge(Si)/Si 1-x Ge x islands proceeds with an abrupt change in the surface morphology that is similar to the earlier observed transition (from dome to hut islands with a decreasing Ge growth temperature) in the case of island growth on Si(0 0 1) substrates. It is revealed that in growth of Ge(Si)/Si 1-x Ge x islands, in contrast to the Ge(Si)/Si(0 0 1) islands case, the interval of growth temperatures, in which there is a change in the islands morphology (dome-hut transition) shifts towards higher temperatures. For the first time a photoluminescence signal from Ge(Si) self-assembled islands embedded in a strained Si layer is observed

  19. Study of vertical Si/SiO2 interface using laser-assisted atom probe tomography and transmission electron microscopy.

    Science.gov (United States)

    Lee, J H; Lee, B H; Kim, Y T; Kim, J J; Lee, S Y; Lee, K P; Park, C G

    2014-03-01

    Laser-assisted atom probe tomography has opened the way to three-dimensional visualization of nanostructures. However, many questions related to the laser-matter interaction remain unresolved. We demonstrate that the interface reaction can be activated by laser-assisted field evaporation and affects the quantification of the interfacial composition. At a vertical interface between Si and SiO2, a SiO2 molecule tends to combine with a Si atom and evaporate as a SiO molecule, reducing the evaporation field. The features of the reaction depend on the direction of the laser illumination and the inner structure of tip. A high concentration of SiO is observed at a vertical interface between Si and SiO2 when the Si column is positioned at the center of the tip, whereas no significant SiO is detected when the SiO2 layer is at the center. The difference in the interfacial compositions of two samples was due to preferential evaporation of the Si layer. This was explained using transmission electron microscopy observations before and after atom probe experiments. Copyright © 2013 Elsevier Ltd. All rights reserved.

  20. Electrical and thermal conductivities of porous SiC/SiO2/C composites with different morphology from carbonized wood

    NARCIS (Netherlands)

    Sulistyo, Joko; Hata, Toshimitsu; Kitagawa, Hiroyuki; Bronsveld, Paul; Fujisawa, Masashi; Hashimoto, Kozo; Imamura, Yuji

    Porous SiC/SiO2/C composites exhibiting a wide range of high thermal and electrical conductivities were developed from carbonized wood infiltrated with SiO2. As a pre-treatment, the samples were either heated at 100 A degrees C or kept at room temperature followed by sintering in the temperature

  1. Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector

    Science.gov (United States)

    Rahim, Alhan Farhanah Abd; Zainal Badri, Nur'Amirah; Radzali, Rosfariza; Mahmood, Ainorkhilah

    2017-11-01

    In this paper, an investigation of design and simulation of silicon germanium (SiGe) islands on silicon (Si) was presented for potential visible metal semiconductor metal (MSM) photodetector. The characterization of the performances in term of the structural, optical and electrical properties of the structures was analyzed from the simulation results. The project involves simulation using SILVACO Technology Computer Aided Design (TCAD) tools. The different structures of the silicon germanium (SiGe) island on silicon substrate were created, which were large SiGe, small SiGe, combination SiGe and bulk Ge. All the structures were tested for potential Metal Semiconductor Metal (MSM) photodetector. The extracted data such as current versus voltage characteristic, current gain and spectral response were obtained using ATLAS SILVACO tools. The performance of SiGe island structures and bulk Ge on Si substrate as (MSM) photodetector was evaluated by photo and dark current-voltage (I-V) characteristics. It was found that SiGe islands exhibited higher energy band gap compared to bulk Ge. The SiGe islands current-voltage characteristics showed improved current gain compared to bulk Ge. Specifically the enhancement of the islands gain was contributed by the enhanced photo currents and lower dark currents. The spectral responses of the SiGe islands showed peak response at 590 nm (yellow) which is at the visible wavelength. This shows the feasibility of the SiGe islands to be utilized for visible photodetections.

  2. Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector

    Directory of Open Access Journals (Sweden)

    Abd Rahim Alhan Farhanah

    2017-01-01

    Full Text Available In this paper, an investigation of design and simulation of silicon germanium (SiGe islands on silicon (Si was presented for potential visible metal semiconductor metal (MSM photodetector. The characterization of the performances in term of the structural, optical and electrical properties of the structures was analyzed from the simulation results. The project involves simulation using SILVACO Technology Computer Aided Design (TCAD tools. The different structures of the silicon germanium (SiGe island on silicon substrate were created, which were large SiGe, small SiGe, combination SiGe and bulk Ge. All the structures were tested for potential Metal Semiconductor Metal (MSM photodetector. The extracted data such as current versus voltage characteristic, current gain and spectral response were obtained using ATLAS SILVACO tools. The performance of SiGe island structures and bulk Ge on Si substrate as (MSM photodetector was evaluated by photo and dark current-voltage (I-V characteristics. It was found that SiGe islands exhibited higher energy band gap compared to bulk Ge. The SiGe islands current-voltage characteristics showed improved current gain compared to bulk Ge. Specifically the enhancement of the islands gain was contributed by the enhanced photo currents and lower dark currents. The spectral responses of the SiGe islands showed peak response at 590 nm (yellow which is at the visible wavelength. This shows the feasibility of the SiGe islands to be utilized for visible photodetections.

  3. Effect of Strontium and Phosphorus on Eutectic Al-Si Nucleation and Formation of β-Al5FeSi in Hypoeutectic Al-Si Foundry Alloys

    Science.gov (United States)

    Cho, Y. H.; Lee, H.-C.; Oh, K. H.; Dahle, A. K.

    2008-10-01

    The present investigation was carried out on hypoeutectic Al-Si alloys containing two levels of Fe, 0.5 and 1.1 wt pct, and Sr in the range of 30 to 500 ppm. The addition of Sr in excess of 100 ppm significantly reduced the number of eutectic grains and also resulted in the formation of polygonal-shaped Al2Si2Sr intermetallics. Transmission electron microscopy studies revealed that the Al2Si2Sr phase surrounded the P-rich particles. This may suggest that the otherwise potent nuclei for the Al-Si eutectic, aluminum phosphide (AlP), become poisoned or deactivated by the formation of the Al2Si2Sr phase around the particles. At the high-Fe level (1.1 wt pct Fe), pre-eutectic formation of β-Al5FeSi platelets further reduced the number of eutectic Al-Si nucleation events. It is proposed that both eutectic silicon and β-Al5FeSi are preferentially nucleated on AlP particles. Nucleation of eutectic silicon, therefore, becomes more difficult when it is preceded by the formation of Al2Si2Sr or β-Al5FeSi, because fewer nuclei are available to nucleate silicon. Addition of up to 60 ppm P to the alloys increased the formation temperature of the β-Al5FeSi platelets but did not significantly alter the size, whereas the addition of Sr decreased the β-Al5FeSi nucleation temperature by reducing the potency of the AlP particles.

  4. Channeling effect studies in V3Si single crystals

    International Nuclear Information System (INIS)

    Meyer, O.

    1978-01-01

    Angular scans through the [100] and [110] channeling directions in V 3 Si have been performed using elastically scattered He ions for the V-rows and the 28 Si(d,p 8 ) 29 Si reaction for the Si-rows. The amplitude of thermal vibration perpendicular to the V-chains was found to be larger than that at 45 0 to them. The Si atoms however vibrate isotropically. The use of multi-row potentials instead of single-row potentials leads to better overall agreement between measured and calculated critical angles. (Auth.)

  5. Generation of endo-siRNAs in Xenopus laevis oocytes.

    Science.gov (United States)

    Alnumeir, Sammer; Werner, Andreas

    2014-01-01

    Endogenous siRNAs (endo-siRNAs) are well documented and characterized in C. elegans and Drosophila. Endo-siRNAs can also be found in vertebrates; however, their biology is much less clear. They are thought to be produced by Dicer and to contribute to transposon silencing. Because of their generally low abundance and their similarity with miRNAs and products of physiological RNA turn-over, endo-siRNAs are difficult to investigate. Here, we report a system, oocytes from Xenopus laevis, that allows for the generation and analysis of endo-siRNAs from double-stranded RNA precursors.

  6. Male germ cells express abundant endogenous siRNAs

    Science.gov (United States)

    Song, Rui; Hennig, Grant W.; Wu, Qiuxia; Jose, Charlie; Zheng, Huili; Yan, Wei

    2011-01-01

    In mammals, endogenous siRNAs (endo-siRNAs) have only been reported in murine oocytes and embryonic stem cells. Here, we show that murine spermatogenic cells express numerous endo-siRNAs, which are likely to be derived from naturally occurring double-stranded RNA (dsRNA) precursors. The biogenesis of these testicular endo-siRNAs is DROSHA independent, but DICER dependent. These male germ cell endo-siRNAs can potentially target hundreds of transcripts or thousands of DNA regions in the genome. Overall, our work has unveiled another hidden layer of regulation imposed by small noncoding RNAs during male germ cell development. PMID:21788498

  7. Effects of Heat Treatment on SiC-SiC Ceramic Matrix Composites

    Science.gov (United States)

    Knauf, Michael W.

    Residual stresses resulting from the manufacturing process found within a silicon carbide/silicon carbide (SiC/SiC) ceramic matrix composite were thoroughly investigated through the use of high-energy X-ray diffraction and Raman microspectroscopy. The material system studied was a Rolls-Royce composite produced with Hi-Nicalon fibers woven into a five harness satin weave, coated with boron nitride and silicon carbide interphases, and subsequently infiltrated with silicon carbide particles and a silicon matrix. Constituent stress states were measured before, during, and after heat treatments ranging from 900 °C to 1300 °C for varying times between one and sixty minutes. Stress determination methods developed through these analyses can be utilized in the development of ceramic matrix composites and other materials employing boron-doped silicon. X-ray diffraction experiments were performed at the Argonne National Laboratory Advanced Photon Source to investigate the evolution of constituent stresses through heat treatment, and determine how stress states are affected at high temperature through in situ measurements during heat treatments up to 1250 °C for 30 minutes. Silicon carbide particles in the as-received condition exhibited a nearly isotropic stress state with average tensile stresses of approximately 300 MPa. The silicon matrix exhibited a complimentary average compressive stress of approximately 300 MPa. Strong X-ray diffraction evidence is presented demonstrating solid state boron diffusion and increased boron solubility found in silicon throughout heat treatment. While the constituent stress states did evolve through the heat treatment cycles, including approaching nearly stress-free conditions at temperatures close to the manufacturing temperature, no permanent relaxation of stress was observed. Raman spectroscopy was utilized to investigate stresses found within silicon carbide particles embedded within the matrix and the silicon matrix as an alternate

  8. Superconductivity in the YIr2Si2 and LaIr2Si2 Polymorphs

    Science.gov (United States)

    Vališka, Michal; Pospíšil, Jiří; Prokleška, Jan; Diviš, Martin; Rudajevová, Alexandra; Sechovský, Vladimír

    2012-10-01

    We report on the existence of superconductivity in YIr2Si2 and LaIr2Si2 compounds in relation to the crystal structure. The two compounds crystallize in two structural polymorphs, both tetragonal. The high-temperature polymorph (HTP) is of the CaBe2Ge2 structure type (space group P4/nmm), while the low-temperature polymorph (LTP) is of the ThCr2Si2 structure type (I4/mmm). By studying the polycrystals prepared by arc melting, we observed that the rapidly cooled samples retain the HTP even at room temperature (RT) and below. Annealing such samples at ≥900 °C followed by slow cooling to RT provides the LTP. Both the HTP and LTP were subsequently studied with respect to magnetism and superconductivity by electrical resistivity, magnetization, AC susceptibility, and specific heat measurements. The HTP and LTP of both compounds behave as Pauli paramagnets. Superconductivity was found exclusively in the HTP of both compounds below TSC (= 2.52 K in YIr2Si2 and 1.24 K in LaIr2Si2). The relationships of magnetism and superconductivity with the electronic and crystal structures are discussed by comparing experimental data with the results of first-principles electronic structure calculations.

  9. Influence of oxygen doping on resistive-switching characteristic of a-Si/c-Si device

    Science.gov (United States)

    Zhang, Jiahua; Chen, Da; Huang, Shihua

    2017-12-01

    The influence of oxygen doping on resistive-switching characteristics of Ag/a-Si/p+-c-Si device was investigated. By oxygen doping in the growth process of amorphous silicon, the device resistive-switching performances, such as the ON/OFF resistance ratios, yield and stability were improved, which may be ascribed to the significant reduction of defect density because of oxygen incorporation. The device I–V characteristics are strongly dependent on the oxygen doping concentration. As the oxygen doping concentration increases, the Si-rich device gradually transforms to an oxygen-rich device, and the device yield, switching characteristics, and stability may be improved for silver/oxygen-doped a-Si/p+-c-Si device. Finally, the device resistive-switching mechanism was analyzed. Project supported by the Zhejiang Provincial Natural Science Foundation of China (No. LY17F040001), the Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University (No. KF2015_02), the Open Project Program of National Laboratory for Infrared Physics, Chinese Academy of Sciences (No. M201503), the Zhejiang Provincial Science and Technology Key Innovation Team (No. 2011R50012), and the Zhejiang Provincial Key Laboratory (No. 2013E10022).

  10. Characterization of a-FeSi2/c-Si heterojunctions for photovoltaic applications

    International Nuclear Information System (INIS)

    Antwis, L; Gwilliam, R; Smith, A; Jeynes, C; Homewood, K

    2012-01-01

    Amorphous iron disilicide (a-FeSi 2 ) shows potential as a photovoltaic material due to its bandgap of ∼0.9 eV and high absorption coefficient. We present a detailed characterization of a-FeSi 2 , with particular emphasis on the electrical properties of a-FeSi 2 /c-Si heterostructures, under both dark and illuminated conditions. The samples were prepared on quartz and silicon substrates using RF co-sputtering of an iron/silicon target. Optical transmission spectroscopy was used to confirm the bandgap of the samples. Van der Pauw measurements and current–voltage analysis techniques were used to determine the carrier type and conduction mechanisms of the samples. The results show that a-FeSi 2 forms a rectifying p–n heterojunction on p-type crystalline silicon. The silicide is characterized by very high carrier concentrations, resulting in the depletion region being almost entirely formed within the silicon substrate. Initial J–V results suggest carrier recombination within the silicide to be the dominant contribution to the conduction across the junction, with photovoltaic effects having been observed under AM1.5 conditions. (paper)

  11. Optimization of spectrally selective Si/SiO2 based filters for thermophotovoltaic devices

    Science.gov (United States)

    Khosroshahi, Farhad Kazemi; Ertürk, Hakan; Pınar Mengüç, M.

    2017-08-01

    Design of a spectrally selective filter based on one-dimensional Si/SiO2 layers is considered for improved performance of thermo-photovoltaic devices. Spectrally selective filters transmit only the convertible radiation from the emitter as non-convertible radiation leads to a reduction in cell efficiency due to heating. The presented Si/SiO2 based filter concept reflects the major part of the undesired range back to the emitter to minimize energy required for the process and it is adaptable to different types of cells and emitters with different temperatures since its cut-off wavelength can be tuned. While this study mainly focuses on InGaSb based thermo-photovoltaic cell, Si, GaSb, and Ga0.78In0.22As0.19Sb0.81 based cells are also examined. Transmittance of the structure is predicted by rigorous coupled wave approach. Genetic algorithm, which is a global optimization method, is used to find the best possible filter structure by considering the overall efficiency as an objective function that is maximized. The simulations show that significant enhancement in the overall system and device efficiency is possible by using such filters with TPV devices. The methodology described in this paper allows for an improved filter design procedure for selected applications.

  12. The morphology of ceramic phases in B x C-SiC-Si infiltrated composites

    International Nuclear Information System (INIS)

    Hayun, S.; Frage, N.; Dariel, M.P.

    2006-01-01

    The present communication is concerned with the effect of the carbon source on the morphology of reaction bonded boron carbide (B 4 C). Molten silicon reacts strongly and rapidly with free carbon to form large, faceted, regular polygon-shaped SiC particles, usually embedded in residual silicon pools. In the absence of free carbon, the formation of SiC relies on carbon that originates from within the boron carbide particles. Examination of the reaction bonded boron carbide revealed a core-rim microstructure consisting of boron carbide particles surrounded by secondary boron carbide containing some dissolved silicon. This microstructure is generated as the outcome of a dissolution-precipitation process. In the course of the infiltration process molten Si dissolves some boron carbide until its saturation with B and C. Subsequently, precipitation of secondary boron carbide enriched with boron and silicon takes place. In parallel, elongated, strongly twinned, faceted SiC particles are generated by rapid growth along preferred crystallographic directions. This sequence of events is supported by X-ray diffraction and microcompositional analysis and well accounted for by the thermodynamic analysis of the ternary B-C-Si system. - Graphical abstract: Bright field TEM image of the rim area between two boron carbide grains

  13. The morphology of ceramic phases in B xC -SiC -Si infiltrated composites

    Science.gov (United States)

    Hayun, S.; Frage, N.; Dariel, M. P.

    2006-09-01

    The present communication is concerned with the effect of the carbon source on the morphology of reaction bonded boron carbide (B 4C). Molten silicon reacts strongly and rapidly with free carbon to form large, faceted, regular polygon-shaped SiC particles, usually embedded in residual silicon pools. In the absence of free carbon, the formation of SiC relies on carbon that originates from within the boron carbide particles. Examination of the reaction bonded boron carbide revealed a core-rim microstructure consisting of boron carbide particles surrounded by secondary boron carbide containing some dissolved silicon. This microstructure is generated as the outcome of a dissolution-precipitation process. In the course of the infiltration process molten Si dissolves some boron carbide until its saturation with B and C. Subsequently, precipitation of secondary boron carbide enriched with boron and silicon takes place. In parallel, elongated, strongly twinned, faceted SiC particles are generated by rapid growth along preferred crystallographic directions. This sequence of events is supported by X-ray diffraction and microcompositional analysis and well accounted for by the thermodynamic analysis of the ternary B-C-Si system.

  14. Interface characteristics in Co2MnSi/Ag/Co2MnSi trilayer

    International Nuclear Information System (INIS)

    Li, Yang; Chen, Hong; Wang, Guangzhao; Yuan, Hongkuan

    2016-01-01

    Highlights: • Inferface DO 3 disorder is most favorable in Co 2 MnSi/Ag/Co 2 MnSi trilayer. • Interface itself and inferface DO 3 disorder destroy the half-metallicity of interface layers. • Magnetoresistance is reduced by the interface itself and interface disorder. • Magnetotransport coefficient is largely reduced by the interface itself and interface disorder. - Abstract: Interface characteristics of Co 2 MnSi/Ag/Co 2 MnSi trilayer have been investigated by means of first-principles. The most likely interface is formed by connecting MnSi-termination to the bridge site between two Ag atoms. As annealed at high temperature, the formation of interface DO 3 disorder is most energetically favorable. The spin polarization is reduced by both the interface itself and interface disorder due to the interface state occurs in the minority-spin gap. As a result, the magneto-resistance ratio has a sharp drop based on the estimation of a simplified modeling.

  15. Moessbauer and channeling experiments on TeSi and SmSi

    International Nuclear Information System (INIS)

    Kemerink, G.J.; Boerma, D.O.; Waard, H. de; Wit, J.C. de; Drentje, S.A.

    1980-01-01

    Considerable effort is made to obtain an insight in the structural and electronic properties of ion implanted elemental semiconductors. This research is strongly stimulated by the many applications of semi-conductor devices. We report here on Moessbauer studies of 129 TeSi and 153 SmSi, using the 27.8 keV transition in 129 I and the 103.2 keV transition in 153 Eu, respectively, and on channeling experiments on 128 TeSi and 152 SmSi with a 2 MeV α-beam from the Groningen Van de Graaff generator. In the Moessbauer experiments we used Cu 129 I and EuF 3 .1/2H 2 O as absorber materials. Source and absorber were held at 4.2 K. The implantations were generally done at room temperature with an implantation energy of 100-115 keV. For the Moessbauer and channeling measurements we applied similar Si single crystals and the same implantation and annealing conditions. Crystals with low doses could only be investigated with the Moessbauer effect

  16. Identification of Si and SiH in catalytic chemical vapor deposition of SiH4 by laser induced fluorescence spectroscopy

    Science.gov (United States)

    Nozaki, Yoshitaka; Kongo, Koichi; Miyazaki, Toshihiko; Kitazoe, Makiko; Horii, Katsuhiko; Umemoto, Hironobu; Masuda, Atsushi; Matsumura, Hideki

    2000-11-01

    Radical species produced in catalytic chemical vapor deposition (CVD), often called hot-wire CVD, processes were identified by using a laser induced fluorescence technique. Ground state Si atoms could be detected at low pressures where collisional processes in the gas phase could be ignored. The electronic temperature of Si atoms just after the formation on the catalyzer (tungsten) surfaces was 1320±490 K, when the catalyzer temperature was 2300 K. By the addition of 0.5 Pa of Ar, the electronic temperature was lowered down to 450±30 K. The absolute density of Si atoms was 3±1×109 cm-3 at 10 cm below the catalyzer when the flow rate and the pressure of SiH4 were 0.5 sccm and 4 mPa, respectively. This density is just 0.3% of that of the parent SiH4 molecules. However, since the decay rate of Si atoms is fast, it can be concluded that atomic silicon is one of the major products on the heated catalyzer surfaces. SiH radicals could also be detected, but the production rate of this species is two orders of magnitude less than that of Si atoms. It was also discovered that volatile SiH4 molecules are produced by the atomic hydrogen attack on the amorphous silicon deposited on the chamber walls.

  17. Analysis of poly-Si thin film p^+-n-n+ homojunction solar cell and heterojunction solar cell with and without a thin μc-Si layer at the interface of a-Si and poly-Si layers

    Science.gov (United States)

    Letha, A. J.; Hwang, H. L.

    2009-05-01

    In this study, new possibilities for higher efficiency poly-Si thin film solar cells are investigated using MEDICI^TM device simulator. The poly-Si p^+-n-n+ thin film solar cell with a thin a-Si p+ layer is found to have higher efficiency than the homojunction p^+-n-n+ cell. Further improvement in efficiency of the heterojunction p^+-n-n+ cell is achieved by introducing a thin μc-Si layer at the interface of a-Si emitter and poly-Si absorber layers. The μc-Si layer at the interface is found to reduce the recombination losses at the interface and improved the fill factor and efficiency of the cell. The photovoltaic parameters of the cell and the absorber layer thickness for optimum efficiency are highly influenced by grain size and passivation at the grain boundary.

  18. DFT charge transfer of hybrid molecular ferrocene/Si structures

    International Nuclear Information System (INIS)

    Calborean, Adrian; Buimaga-Iarinca, Luiza; Graur, Florin

    2015-01-01

    The electrochemical behavior and electronic properties of redox-active ferrocenes grafted onto semiconductor Si(100) substrate were investigated theoretically by first-principles calculations. Organic molecules were attached via the formation of Si-C covalent bonds through two different linkers: vinyl (direct grafting), and N 3 (CH 2 ) 11 (indirect grafting). Redox energies and the electronic properties relating to different spacers in hybrid ferrocene Fc/Si and ferrocenium Fc + /Si structures were theoretically extracted and compared with experimental cyclic voltametry data. Electronic charge transfers are discussed through the alignment positions of the frontier orbitals of the molecule with respect to the Si substrate gap. Periodic boundary conditions were used to investigate the Si(100) as a slab surface and hybrid Fc/Si structures. The resulting projected density of states (PDOS) were compared with molecular results and discussed in the light of experimental data. (paper)

  19. Albumin-mediated delivery of siRNA

    DEFF Research Database (Denmark)

    Bienk, Konrad

    2015-01-01

    nucleases. Development of protective carriers for active transport of siRNA is a promising strategy to utilize the potential of siRNA therapeutics. Synthetic carriers have been used but are recognized as foreign and susceptible to capture by the mononuclear phagocytic system and invoking an immune response...... towards albumin. The binding affinity was shown to be dependent on position and number of modifications, and experiments suggested Fatty Acid site 5 as the binding site for the cholesteryl siRNA. In vitro experiments showed reduced serum degradation, increased stability of albumin/siRNA complexes for up...... to 72 hours in serum and reduced TNFα response towards albumin/siRNA complexes compared to naked siRNA in peripheral blood mononuclear cells (PBMCs). It was also demonstrated that albumin can help efficient annealing of highly hydrophobic siRNA. Furthermore, it was shown that, by preferentially...

  20. PIE of nuclear grade SiC/SiC flexural coupons irradiated to 10 dpa at LWR temperature

    Energy Technology Data Exchange (ETDEWEB)

    Koyanagi, Takaaki [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Katoh, Yutai [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2017-03-01

    Silicon carbide fiber-reinforced SiC matrix (SiC/SiC) composites are being actively investigated for accident-tolerant core structures of light water reactors (LWRs). Owing to the limited number of irradiation studies previously conducted at LWR-coolant temperature, this study examined SiC/SiC composites following neutron irradiation at 230–340°C to 2.0 and 11.8 dpa in the High Flux Isotope Reactor. The investigated materials are chemical vapor infiltrated (CVI) SiC/SiC composites with three different reinforcement fibers. The fiber materials were monolayer pyrolytic carbon (PyC)-coated Hi-NicalonTM Type-S (HNS), TyrannoTM SA3 (SA3), and SCS-UltraTM (SCS) SiC fibers. The irradiation resistance of these composites was investigated based on flexural behavior, dynamic Young’s modulus, swelling, and microstructures. There was no notable mechanical properties degradation of the irradiated HNS and SA3 SiC/SiC composites except for reduction of the Young’s moduli by up to 18%. The microstructural stability of these composites supported the absence of degradation. In addition, no progressive swelling from 2.0 to 11.8 dpa was confirmed for these composites. On the other hand, the SCS composite showed significant mechanical degradation associated with cracking within the fiber. This study determined that SiC/SiC composites with HNS or SA3 SiC/SiC fibers, a PyC interphase, and a CVI SiC matrix retain their properties beyond the lifetime dose for LWR fuel cladding at the relevant temperature.