3C-SiC nanocrystal growth on 10° miscut Si(001) surface

Energy Technology Data Exchange (ETDEWEB)

Deokar, Geetanjali, E-mail: gitudeo@gmail.com [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); D' Angelo, Marie; Demaille, Dominique [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Cavellin, Catherine Deville [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Faculté des Sciences et Technologie UPEC, 61 av. De Gaulle, Créteil F-94010 (France)

2014-04-01

The growth of 3C-SiC nano-crystal (NC) on 10° miscut Si(001) substrate by CO{sub 2} thermal treatment is investigated by scanning and high resolution transmission electron microscopies. The vicinal Si(001) surface was thermally oxidized prior to the annealing at 1100 °C under CO{sub 2} atmosphere. The influence of the atomic steps at the vicinal SiO{sub 2}/Si interface on the SiC NC growth is studied by comparison with the results obtained for fundamental Si(001) substrates in the same conditions. For Si miscut substrate, a substantial enhancement in the density of the SiC NCs and a tendency of preferential alignment of them along the atomic step edges is observed. The SiC/Si interface is abrupt, without any steps and epitaxial growth with full relaxation of 3C-SiC occurs by domain matching epitaxy. The CO{sub 2} pressure and annealing time effect on NC growth is analyzed. The as-prepared SiC NCs can be engineered further for potential application in optoelectronic devices and/or as a seed for homoepitaxial SiC or heteroepitaxial GaN film growth. - Highlights: • Synthesis of 3C-SiC nanocrystals epitaxied on miscut-Si using a simple technique • Evidence of domain matching epitaxy at the SiC/Si interface • SiC growth proceeds along the (001) plane of host Si. • Substantial enhancement of the SiC nanocrystal density due to the miscut • Effect of the process parameters (CO{sub 2} pressure and annealing duration)

Structural and electronic properties of Si/SiO2 MOS structures with aligned 3C-SiC nanocrystals in the oxide

International Nuclear Information System (INIS)

Pongracz, A.; Battistig, G.; Duecso, Cs.; Josepovits, K.V.; Deak, P.

2007-01-01

Our group previously proved that a simple reactive annealing in CO containing gas produces 3C-SiC nanocrystals, which are epitaxially and void-free aligned in the Si substrate. By a further thermal oxidation step, these nanocrystals can be lifted from the Si and incorporated into the SiO 2 matrix, thereby creating a promising structure for charge storage. In this work the structural and electrical properties of such systems with nanocrystalline SiC will be presented. Prototype MOS structures with 3C-SiC nanocrystals were produced for current-voltage and capacitance-voltage measurements. The results indicate that the high-temperature annealing did not damage the MOS structure, despite the fact that the CO annealing changed the electrical properties of the system. There was a positive charge accumulation and a reversible carrier injection observed in the structure. We assume that the positive charges originated from oxygen vacancies and the charge injection is related to the presence of SiC nanocrystals

Memory properties and charge effect study in Si nanocrystals by scanning capacitance microscopy and spectroscopy

Directory of Open Access Journals (Sweden)

Bassani Franck

2011-01-01

Full Text Available Abstract In this letter, isolated Si nanocrystal has been formed by dewetting process with a thin silicon dioxide layer on top. Scanning capacitance microscopy and spectroscopy were used to study the memory properties and charge effect in the Si nanocrystal in ambient temperature. The retention time of trapped charges injected by different direct current (DC bias were evaluated and compared. By ramp process, strong hysteresis window was observed. The DC spectra curve shift direction and distance was observed differently for quantitative measurements. Holes or electrons can be separately injected into these Si-ncs and the capacitance changes caused by these trapped charges can be easily detected by scanning capacitance microscopy/spectroscopy at the nanometer scale. This study is very useful for nanocrystal charge trap memory application.

Ultra-low-energy ion-beam synthesis of nanometer-separated Si nanoparticles and Ag nanocrystals 2D layers

Science.gov (United States)

Carrada, M.; Haj Salem, A.; Pecassou, B.; Paillard, V.; Ben Assayag, G.

2018-03-01

2D networks of Si and Ag nanocrystals have been fabricated in the same SiO2 matrix by Ultra-Low-Energy Ion-Beam-Synthesis. Our synthesis scheme differs from a simple sequential ion implantation and its key point is the control of the matrix integrity through an appropriate intermediate thermal annealing. Si nanocrystal layer is synthesised first due to high thermal budget required for nucleation, while the second Ag nanocrystal plane is formed during a subsequent implantation due to the high diffusivity of Ag in silica. The aim of this work is to show how it is possible to overcome the limitation related to ion mixing and implantation damage to obtain double layers of Si-NCs and Ag-NCs with controlled characteristics. For this, we take advantage of annealing under slight oxidizing ambient to control the oxidation of Si-NCs and the Si excess in the matrix. The nanocrystal characteristics and in particular their position and size can be adjusted thanks to a compromise between the implantation energy, the implanted dose for both Si and Ag ions and the intermediate annealing conditions (atmosphere, temperature and duration).

Microscopic and macroscopic characterization of the charging effects in SiC/Si nanocrystals/SiC sandwiched structures

International Nuclear Information System (INIS)

Xu, Jie; Xu, Jun; Wang, Yuefei; Cao, Yunqing; Li, Wei; Yu, Linwei; Chen, Kunji

2014-01-01

Microscopic charge injection into the SiC/Si nanocrystals/SiC sandwiched structures through a biased conductive AFM tip is subsequently characterized by both electrostatic force microscopy and Kelvin probe force microscopy (KPFM). The charge injection and retention characteristics are found to be affected by not only the band offset at the Si nanocrystals/SiC interface but also the doping type of the Si substrate. On the other hand, capacitance–voltage (C–V) measurements investigate the macroscopic charging effect of the sandwiched structures with a thicker SiC capping layer, where the charges are injected from the Si substrates. The calculated macroscopic charging density is 3–4 times that of the microscopic one, and the possible reason is the underestimation of the microscopic charging density caused by the averaging effect and detection delay in the KPFM measurements. (paper)

Encapsulated Silicon Nanocrystals Formed in Silica by Ion Beam Synthesis

International Nuclear Information System (INIS)

Choi, Han Woo; Woo, Hyung Joo; Kim, Joon Kon; Kim, Gi Dong; Hong, Wan; Ji, Young Yong

2004-01-01

The photoluminescence (PL) emission of Si nanocrystals synthesized by 400 keV Si ion implanted in SiO 2 is studied as a function of ion dose and annealing time. The formation of nanocrystals at around 600 nm from the surface was confirmed by RBS and HRTEM, and the Si nanocrystals showed a wide and very intense PL emission at 700-900 nm. The intensity of this emission showed a typical behaviour with a fast transitory increase to reach a saturation with the annealing time, however, the red shift increased continuously because of the Ostwald ripening. The oversaturation of dose derived a decrease of PL intensity because of the diminishment of quantum confinement. A strong enhancement of PL intensity by H passivation was confirmed also, and the possible mechanism is discussed

Optimization of the luminescence emission of Si nanocrystals synthesized from non-stoichiometric Si oxides using a Central Composite Design of the deposition process

International Nuclear Information System (INIS)

Morana, B.; Sande, J.C.G. de; Rodriguez, A.; Sangrador, J.; Rodriguez, T.; Avella, M.; Jimenez, J.

2008-01-01

Si oxide films with a controlled excess of Si were deposited on Si wafers by LPCVD using Si 2 H 6 and O 2 , thermally annealed to 1100 deg. C for 1 h to form Si nanocrystals embedded in SiO 2 and subsequently annealed at 450 deg. C in forming gas. The samples were characterized by Fourier transform infrared spectroscopy, spectroscopic ellipsometry and cathodoluminescence spectroscopy. The excess of Si in the as-deposited samples, ranging from 0 to 70% in volume, was obtained from the ellipsometry data analysis. After annealing at 1100 deg. C, the samples show a luminescence band (peaking at 665 nm) at 80 K and at room temperature which is associated to the presence of Si nanocrystals. The growth rate, the excess of Si incorporated to the films and the intensity of the luminescence band were modelled using a Face-Centered Central Composite Design as a function of the main deposition variables (pressure, 185-300 mTorr; temperature, 250-400 deg. C; Si 2 H 6 /O 2 flow ratio, 2-5) aiming to control the growth process and the incorporation of Si in excess as well as to determine the experimental conditions that yield the samples with the maximum intensity of the luminescence emission

Functionalized SiC nanocrystals for tuning of optical, thermal, mechanical and electrical properties of polyvinyl alcohol

DEFF Research Database (Denmark)

Saini, Isha; Sharma, Annu; Dhiman, Rajnish

2017-01-01

 MPa for PVA to 45 MPa for PVA-SiC nanocomposite film containing 0.023 wt% f-SiC nanocrystals at an applied load of 9.8 mN indicating improved interfacial interaction. Current-voltage analysis indicated an increase in conductivity of PVA with the introduction of f-SiC nanocrystals. The conduction......Polyvinyl alcohol (PVA)-SiC nanocomposite films were prepared by incorporating functionalized Silicon Carbide (f-SiC) nanocrystals in PVA matrix. Structural characterization of SiC nanocrystals before and after the functionalization was carried out using Fourier transform infrared spectroscopy...... (FTIR), X-ray diffraction (XRD) and Thermogravimetric analysis (TGA). Transmission electron microscopy (TEM) and Scanning Electron Microscopy (SEM) were used to study the morphology and size distribution of f-SiC nanocrystals in PVA-SiC nanocomposite films. TEM and SEM images depict an improved...

Synthesis and charge storage properties of double-layered NiSi nanocrystals

International Nuclear Information System (INIS)

Yoon, Jong-Hwan

2010-01-01

Based on bidirectional diffusion of Ni atoms, double-layered nickel silicide (NiSi) nanocrystals (NCs) for multilevel charge storage were fabricated, and their charge storage properties were examined. The double layer was produced by long-term thermal annealing (for 4 h at 900 o C) of a sandwich structure comprised of a thin Ni film of 0.3 nm sandwiched between two silicon-rich oxide (SiO 1.36 ) layers. Transmission electron microscopic image clearly exhibits a distinct NiSi nanocrystal double layer with a gap of about 7 nm between the mean positions of particle distribution in each NC layer. Capacitance-voltage measurements on the metal/oxide/semiconductor (MOS) capacitors with the double-layered NiSi nanocrystals are shown to have the apparent two plateaus of charge storage, the large memory window of about 9 V and the improved charge retention stability.

InAs nanocrystals on SiO2/Si by molecular beam epitaxy for memory applications

International Nuclear Information System (INIS)

Hocevar, Moiera; Regreny, Philippe; Descamps, Armel; Albertini, David; Saint-Girons, Guillaume; Souifi, Abdelkader; Gendry, Michel; Patriarche, Gilles

2007-01-01

We studied a memory structure based on InAs nanocrystals grown by molecular beam epitaxy directly on thermal SiO 2 on silicon. Both nanocrystal diameter and density can be controlled by growth parameters. Transmission electron microscopy analysis shows high crystallinity and low size dispersion. In an electrical test structure with a 3.5 nm tunnel oxide, we observed that 80% of the initial injected electrons remain stored in the InAs nanocrystals after 3 months and that the retention time for electrons in InAs nanocrystals is four orders of magnitude higher than in silicon nanocrystals

Nonvolatile memory characteristics influenced by the different crystallization of Ni-Si and Ni-N nanocrystals

International Nuclear Information System (INIS)

Chen, W.-R.; Yeh, J.-L.; Chang, C.-Y.; Chang, T.-C.; Chen, S.-C.

2008-01-01

The formation of Ni-Si and Ni-N nanocrystals by sputtering a Ni 0.3 Si 0.7 target in argon and nitrogen environment were proposed in this paper. A transmission electron microscope analysis shows the nanocrystals embedded in the nitride layer. X-ray photoelectron spectroscopy and x-ray diffraction also offer the chemical material analysis of nanocrystals with surrounding dielectric and the crystallization of nanocrystals for different thermal annealing treatments. Nonvolatile Ni-Si nanocrystal memories reveal superior electrical characteristics for charge storage capacity and reliability due to the improvement of thermal annealing treatment. In addition, we used energy band diagrams to explain the significance of surrounding dielectric for reliability

Bond length contraction in Au nanocrystals formed by ion implantation into thin SiO2

International Nuclear Information System (INIS)

Kluth, P.; Johannessen, B.; Giraud, V.; Cheung, A.; Glover, C.J.; Azevedo, G. de M; Foran, G.J.; Ridgway, M.C.

2004-01-01

Au nanocrystals (NCs) fabricated by ion implantation into thin SiO 2 and annealing were investigated by means of extended x-ray absorption fine structure (EXAFS) spectroscopy and transmission electron microscopy. A bond length contraction was observed and can be explained by surface tension effects in a simple liquid-drop model. Such results are consistent with previous reports on nonembedded NCs implying a negligible influence of the SiO 2 matrix. Cumulant analysis of the EXAFS data suggests surface reconstruction or relaxation involving a further shortened bond length. A deviation from the octahedral closed shell structure is apparent for NCs of size 25 A

Structural, spectroscopic and cytotoxicity studies of TbF3@CeF3 and TbF3@CeF3@SiO2 nanocrystals

International Nuclear Information System (INIS)

Grzyb, Tomasz; Runowski, Marcin; Dąbrowska, Krystyna; Giersig, Michael; Lis, Stefan

2013-01-01

Terbium fluoride nanocrystals, covered by a shell, composed of cerium fluoride were synthesized by a co-precipitation method. Their complex structure was formed spontaneously during the synthesis. The surface of these core/shell nanocrystals was additionally modified by silica. The properties of TbF 3 @CeF 3 and TbF 3 @CeF 3 @SiO 2 nanocrystals, formed in this way, were investigated. Spectroscopic studies showed that the differences between these two groups of products resulted from the presence of the SiO 2 shell. X-ray diffraction patterns confirmed the trigonal crystal structure of TbF 3 @CeF 3 nanocrystals. High resolution transmission electron microscopy in connection with energy-dispersive X-ray spectroscopy showed a complex structure of the formed nanocrystals. Crystallized as small discs, ‘the products’, with an average diameter around 10 nm, showed an increase in the concentration of Tb 3+ ions from surface to the core of nanocrystals. In addition to photo-physical analyses, cytotoxicity studies were performed on HSkMEC (Human Skin Microvascular Endothelial Cells) and B16F0 mouse melanoma cancer cells. The cytotoxicity of the nanomaterials was neutral for the investigated cells with no toxic or antiproliferative effect in the cell cultures, either for normal or for cancer cells. This fact makes the obtained nanocrystals good candidates for biological applications and further modifications of the SiO 2 shell.Graphical Abstract

Plasmon-assisted photoluminescence enhancement of SiC nanocrystals by proximal silver nanoparticles

International Nuclear Information System (INIS)

Zhang, N.; Dai, D.J.; Fan, J.Y.

2012-01-01

Highlights: ► We studied metal surface plasmon-enhanced photoluminescence in SiC nanocrystals. ► The integrated emission intensity can be enhanced by 17 times. ► The coupling between SiC emission and Ag plasmon oscillation induces the enhancement. ► The enhancement is tunable with varied spacing thickness of electrolytes. - Abstract: Plasmon-enhanced photoluminescence has wide application potential in many areas, whereas the underlying mechanism is still in debate. We report the photoluminescence enhancement in SiC nanocrystal–Ag nanoparticle coupled system spaced by the poly(styrene sulfonic acid) sodium salt/poly(allylamine hydrochloride) polyelectrolyte bilayers. The integrated luminescence intensity can be improved by up to 17 times. Our analysis indicates that the strong coupling between the SiC nanocrystals and the surface plasmon oscillation of the silver nanoparticles is the major cause of the luminescence enhancement. These findings will help to understand the photoluminescence enhancement mechanism as well as widen the applications of the SiC nanocrystals in photonics and life sciences.

Superheating and supercooling of Ge nanocrystals embedded in SiO2

International Nuclear Information System (INIS)

Xu, Q; Sharp, I D; Yuan, C W; Yi, D O; Liao, C Y; Glaeser, A M; Minor, A M; Beeman, J W; Ridgway, M C; Kluth, P; Iii, J W Ager; Chrzan, D C; Haller, E E

2007-01-01

Free-standing nanocrystals exhibit a size-dependant thermodynamic melting point reduction relative to the bulk melting point that is governed by the surface free energy. The presence of an encapsulating matrix, however, alters the interface free energy of nanocrystals and their thermodynamic melting point can either increase or decrease relative to bulk. Furthermore, kinetic contributions can significantly alter the melting behaviours of embedded nanoscale materials. To study the effect of an encapsulating matrix on the melting behaviour of nanocrystals, we performed in situ electron diffraction measurements on Ge nanocrystals embedded in a silicon dioxide matrix. Ge nanocrystals were formed by multi-energy ion implantation into a 500 nm thick silica thin film on a silicon substrate followed by thermal annealing at 900 deg. C for 1 h. We present results demonstrating that Ge nanocrystals embedded in SiO 2 exhibit a 470 K melting/solidification hysteresis that is approximately symmetric about the bulk melting point. This unique behaviour, which is thought to be impossible for bulk materials, is well described using a classical thermodynamic model that predicts both kinetic supercooling and kinetic superheating. The presence of the silica matrix suppresses surface pre-melting of nanocrystals. Therefore, heterogeneous nucleation of both the liquid phase and the solid phase are required during the heating and cooling cycle. The magnitude of melting hysteresis is governed primarily by the value of the liquid Ge/solid Ge interface free energy, whereas the relative values of the solid Ge/matrix and liquid Ge/matrix interface free energies govern the position of the hysteresis loop in absolute temperature

Effect of hydrostatic pressure on photoluminescence spectra from structures with Si nanocrystals fabricated in SiO2 matrix

International Nuclear Information System (INIS)

Zhuravlev, K.S.; Tyschenko, I.E.; Vandyshev, E.N.; Bulytova, N.V.; Misiuk, A.; Rebohle, L.; Skorupa, W.

2002-01-01

The effect of hydrostatic pressure applied at high temperature on photoluminescence of Si-implanted SiO 2 films was studied. A 'blue'-shift of PL spectrum from the SiO 2 films implanted with Si + ions to total dose of 1.2x10 17 cm -2 with increase in hydrostatic pressure was observed. For the films implanted with Si + ions to a total dose of 4.8x10 16 cm -2 high temperature annealing under high hydrostatic pressure (12 kbar) causes a 'red'-shift of photoluminescence spectrum. The 'red' photoluminescence bands are attributed to Si nanocrystals while the 'blue' ones are related to Si nanocrystals of reduced size or chains of silicon atoms or Si-Si defects. A decrease in size of Si nanocluster occurs in result of the pressure-induced decrease in the diffusion of silicon atoms. (author)

Photoluminescence from Si nanocrystals in silica: The effect of hydrogen

International Nuclear Information System (INIS)

Cheylan, S.; Elliman, R.G.

2001-01-01

The effect of H passivation on the PL emission of Si nanocrystals produced in silica by ion-implantion and annealing is shown to depend on the implant fluence. At low fluences, where the nanocrystals are small, passivation causes an enhancement of the emission intensity that is uniform over the full spectral range and therefore appears to be independent of nanocrystal size. For higher fluences, where the average size and size distribution of the nanocrystals are larger, the enhancement occurs preferentially at longer wavelengths, giving rise to a red-shift in the emission spectra. Both the enhancement and the red-shift increase monotonically with increasing fluence. These data are shown to be consistent with a model in which the probability to contain a non-radiative defect increases with nanocrystal size

ZnO nanocrystals on SiO2/Si surfaces thermally cleaned in ultrahigh vacuum and characterized using spectroscopic photoemission and low energy electron microscopy

International Nuclear Information System (INIS)

Ericsson, Leif K. E.; Magnusson, Kjell O.; Zakharov, Alexei A.

2010-01-01

Thermal cleaning in ultrahigh vacuum of ZnO nanocrystals distributed on SiO 2 /Si surfaces has been studied using spectroscopic photoemission and low energy electron microscopy (SPELEEM). This study thus concern weakly bound ZnO nanocrystals covering only 5%-10% of the substrate. Chemical properties, crystallinity, and distribution of nanocrystals are used to correlate images acquired with the different techniques showing excellent correspondence. The nanocrystals are shown to be clean enough after thermal cleaning at 650 deg. C to be imaged by LEEM and x-ray PEEM as well as chemically analyzed by site selective x-ray photoelectron spectroscopy (μ-XPS). μ-XPS shows a sharp Zn 3d peak and resolve differences in O 1s states in oxides. The strong LEEM reflections together with the obtained chemical information indicates that the ZnO nanocrystals were thermally cleaned, but do not indicate any decomposition of the nanocrystals. μ-XPS was also used to determine the thickness of SiO 2 on Si. This article is the first to our knowledge where the versatile technique SPELEEM has been used to characterize ZnO nanocrystals.

Photoluminescence studies of Li-doped Si nanocrystals

Czech Academy of Sciences Publication Activity Database

Klimešová, Eva; Vacík, Jiří; Holý, V.; Pelant, Ivan

2013-01-01

Roč. 3, č. 14 (2013), s. 1-7 ISSN 1847-9804 R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:68378271 ; RVO:61389005 Keywords : Si nanocrystals * photoluminescence * doping * Li-ion batteries Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.949, year: 2013

Observation of spin-selective tunneling in SiGe nanocrystals.

Science.gov (United States)

Katsaros, G; Golovach, V N; Spathis, P; Ares, N; Stoffel, M; Fournel, F; Schmidt, O G; Glazman, L I; De Franceschi, S

2011-12-09

Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in the valence band of the semiconductor. We demonstrate both experimentally and theoretically that spin-selective tunneling in semiconductor nanostructures can be achieved without the use of ferromagnetic contacts. The reported effect, which relies on mixing the light and heavy holes, should be observable in a broad class of quantum-dot systems formed in semiconductors with a degenerate valence band.

Organization of silicon nanocrystals by localized electrochemical etching

International Nuclear Information System (INIS)

Ayari-Kanoun, Asma; Drouin, Dominique; Beauvais, Jacques; Lysenko, Vladimir; Nychyporuk, Tetyana; Souifi, Abdelkader

2009-01-01

An approach to form a monolayer of organized silicon nanocrystals on a monocrystalline Si wafer is reported. Ordered arrays of nanoholes in a silicon nitride layer were obtained by combining electron beam lithography and plasma etching. Then, a short electrochemical etching current pulse led to formation of a single Si nanocrystal per each nanohole. As a result, high quality silicon nanocrystal arrays were formed with well controlled and reproducible morphologies. In future, this approach can be used to fabricate single electron devices.

Electrical resistivity of nanocrystals in Fe-Al-Ga-P-B-Si-Cu alloy

International Nuclear Information System (INIS)

Pekala, K.; Jaskiewicz, P.; Nowinski, J.L.; Pekala, M.

2003-01-01

In new supercooled Fe 74 Al 4 Ga 2 P 11 B 4 Si 4 Cu 1 alloy the 10 nm size α-Fe(Si) nanocrystals are precipitated. Thermal stability is analyzed by the electron transport and magnetization measurements. Temperature variation of electrical resistivity of nanocrystals is determined and discussed for alloys with different initial crystalline fraction. Possible mechanism inhibiting the grain growth is presented

Implantation of P ions in SiO2 layers with embedded Si nanocrystals

International Nuclear Information System (INIS)

Kachurin, G.A.; Cherkova, S.G.; Volodin, V.A.; Kesler, V.G.; Gutakovsky, A.K.; Cherkov, A.G.; Bublikov, A.V.; Tetelbaum, D.I.

2004-01-01

The effect of 10 13 -10 16 cm -2 P ions implantation and of subsequent annealing on Si nanocrystals (Si-ncs), formed preliminarily in SiO 2 layers by the ion-beam synthesis, has been studied. Photoluminescence (PL), Raman spectroscopy, high resolution electron microscopy (HREM), X-Ray Photoelectron Spectroscopy (XPS) and optical absorption were used for characterizations. The low fluence implantations have shown even individual displacements in Si-ncs quench their PL. Restoration of PL from partly damaged Si-ncs proceeds at annealing less than 1000 deg. C. In the low fluence implanted and annealed samples an increased Si-ncs PL has been found and ascribed to the radiation-induced shock crystallization of stressed Si nanoprecipitates. Annealing at temperatures under 1000 deg. C are inefficient when P ion fluences exceed 10 14 cm -2 , thus becoming capable to amorphize Si-ncs. High crystallization temperature of the amorphized Si-ncs is attributed to a counteraction of their shell layers. After implantation of the highest P fluences an enhanced recovery of PL was found from P concentration over 0.1 at.%. Raman spectroscopy and HREM showed an increased Si-ncs number in such layers. The effect resembles the impurity-enhanced crystallization, known for heavily doped bulk Si. This effect, along with the data obtained by XPS, is considered as an indication P atoms are really present inside the Si-ncs. However, no evidence of free electrons appearance has been observed. The fact is explained by an increased interaction of electrons with the donor nuclei in Si-ncs

Migration of CrSi2 nanocrystals through nanopipes in the silicon cap

International Nuclear Information System (INIS)

Galkin, N.G.; Dozsa, L.; Chusovitin, E.A.; Pecz, B.; Dobos, L.

2010-01-01

CrSi 2 nanocrystals (NC) were grown by reactive deposition epitaxy of Cr at 550 deg. C. After deposition the Cr is localized in about 20-30 nm dots on the Si surface. The NCs were covered by silicon cap grown by molecular beam epitaxy at 700 deg. C. The redistribution of NCs in the silicon cap was investigated by transmission electron microscopy and atomic force microscopy. The NCs are partly localized at the deposition depth, and partly migrate near the surface. A new migration mechanism of the CrSi 2 NCs is observed, they are transferred from the bulk toward the surface through nanopipes formed in the silicon cap. The redistribution of CrSi 2 NCs strongly depends on Cr deposition rate and on the cap growth temperature.

Structural and optical characterization of Mn doped ZnS nanocrystals elaborated by ion implantation in SiO2

International Nuclear Information System (INIS)

Bonafos, C.; Garrido, B.; Lopez, M.; Romano-Rodriguez, A.; Gonzalez-Varona, O.; Perez-Rodriguez, A.; Morante, J.R.; Rodriguez, R.

1999-01-01

Mn doped ZnS nanocrystals have been formed in SiO 2 layers by ion implantation and thermal annealing. The structural analysis of the processed samples has been performed mainly by Secondary Ion Mass Spectroscopy (SIMS) and Transmission Electron Microscopy (TEM). The data show the precipitation of ZnS nanocrystals self-organized into two layers parallel to the free surface. First results of the optical analysis of samples co-implanted with Mn show the presence of a yellow-green photoluminescence depending on the Mn concentration and the size of the nanocrystals, suggesting the doping with Mn of some precipitates

Effects of phosphorus doping on structural and optical properties of silicon nanocrystals in a SiO2 matrix

International Nuclear Information System (INIS)

Hao, X.J.; Cho, E.-C.; Scardera, G.; Bellet-Amalric, E.; Bellet, D.; Shen, Y.S.; Huang, S.; Huang, Y.D.; Conibeer, G.; Green, M.A.

2009-01-01

Promise of Si nanocrystals highly depends on tailoring their behaviour through doping. Phosphorus-doped silicon nanocrystals embedded in a silicon dioxide matrix have been realized by a co-sputtering process. The effects of phosphorus-doping on the properties of Si nanocrystals are investigated. Phosphorus diffuses from P-P and/or P-Si to P-O upon high temperature annealing. The dominant X-ray photoelectron spectroscopy P 2p signal attributable to Si-P and/or P-P (130 eV) at 1100 o C indicates that the phosphorus may exist inside Si nanocrystals. It is found that existence of phosphorus enhances phase separation of silicon rich oxide and thereby Si crystallization. In addition, phosphorus has a considerable effect on the optical absorption and photoluminescence properties as a function of annealing temperature.

Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation

Directory of Open Access Journals (Sweden)

Jhovani Bornacelli

2013-01-01

Full Text Available We studied the photoluminescence (PL of Si nanocrystals (Si-NCs embedded in SiO2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm inside the SiO2 achieving a robust and better protected system. After metal ion implantation (Ag or Au, and a subsequent thermal annealing at 600°C under hydrogen-containing atmosphere, the PL signal exhibits a noticeable increase. The ion metal implantation was done at energies such that its distribution inside the silica does not overlap with the previously implanted Si ion . Under proper annealing Ag or Au nanoparticles (NPs could be nucleated, and the PL signal from Si-NCs could increase due to plasmonic interactions. However, the ion-metal-implantation-induced damage can enhance the amount of hydrogen, or nitrogen, that diffuses into the SiO2 matrix. As a result, the surface defects on Si-NCs can be better passivated, and consequently, the PL of the system is intensified. We have selected different atmospheres (air, H2/N2 and Ar to study the relevance of these annealing gases on the final PL from Si-NCs after metal ion implantation. Studies of PL and time-resolved PL indicate that passivation process of surface defects on Si-NCs is more effective when it is assisted by ion metal implantation.

The structure and properties of vacancies in Si nano-crystals calculated by real space pseudopotential methods

International Nuclear Information System (INIS)

Beckman, S.P.; Chelikowsky, James R.

2007-01-01

The structure and properties of vacancies in a 2 nm Si nano-crystal are studied using a real space density functional theory/pseudopotential method. It is observed that a vacancy's electronic properties and energy of formation are directly related to the local symmetry of the vacancy site. The formation energy for vacancies and Frenkel pair are calculated. It is found that both defects have lower energy in smaller crystals. In a 2 nm nano-crystal the energy to form a Frenkel pair is 1.7 eV and the energy to form a vacancy is no larger than 2.3 eV. The energy barrier for vacancy diffusion is examined via a nudged elastic band algorithm

Structural, spectroscopic and cytotoxicity studies of TbF{sub 3}@CeF{sub 3} and TbF{sub 3}@CeF{sub 3}@SiO{sub 2} nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Grzyb, Tomasz; Runowski, Marcin [Adam Mickiewicz University, Department of Rare Earths, Faculty of Chemistry (Poland); Dabrowska, Krystyna [Polish Academy of Sciences, Bacteriophage Laboratory, Institute of Immunology and Experimental Therapy (Poland); Giersig, Michael; Lis, Stefan, E-mail: blis@amu.edu.pl [Adam Mickiewicz University, Department of Rare Earths, Faculty of Chemistry (Poland)

2013-10-15

Terbium fluoride nanocrystals, covered by a shell, composed of cerium fluoride were synthesized by a co-precipitation method. Their complex structure was formed spontaneously during the synthesis. The surface of these core/shell nanocrystals was additionally modified by silica. The properties of TbF{sub 3}@CeF{sub 3} and TbF{sub 3}@CeF{sub 3}@SiO{sub 2} nanocrystals, formed in this way, were investigated. Spectroscopic studies showed that the differences between these two groups of products resulted from the presence of the SiO{sub 2} shell. X-ray diffraction patterns confirmed the trigonal crystal structure of TbF{sub 3}@CeF{sub 3} nanocrystals. High resolution transmission electron microscopy in connection with energy-dispersive X-ray spectroscopy showed a complex structure of the formed nanocrystals. Crystallized as small discs, 'the products', with an average diameter around 10 nm, showed an increase in the concentration of Tb{sup 3+} ions from surface to the core of nanocrystals. In addition to photo-physical analyses, cytotoxicity studies were performed on HSkMEC (Human Skin Microvascular Endothelial Cells) and B16F0 mouse melanoma cancer cells. The cytotoxicity of the nanomaterials was neutral for the investigated cells with no toxic or antiproliferative effect in the cell cultures, either for normal or for cancer cells. This fact makes the obtained nanocrystals good candidates for biological applications and further modifications of the SiO{sub 2} shell.Graphical Abstract.

Structural and optical characterization of Mn doped ZnS nanocrystals elaborated by ion implantation in SiO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Bonafos, C. E-mail: bonafos@el.ub.es; Garrido, B.; Lopez, M.; Romano-Rodriguez, A.; Gonzalez-Varona, O.; Perez-Rodriguez, A.; Morante, J.R.; Rodriguez, R

1999-01-01

Mn doped ZnS nanocrystals have been formed in SiO{sub 2} layers by ion implantation and thermal annealing. The structural analysis of the processed samples has been performed mainly by Secondary Ion Mass Spectroscopy (SIMS) and Transmission Electron Microscopy (TEM). The data show the precipitation of ZnS nanocrystals self-organized into two layers parallel to the free surface. First results of the optical analysis of samples co-implanted with Mn show the presence of a yellow-green photoluminescence depending on the Mn concentration and the size of the nanocrystals, suggesting the doping with Mn of some precipitates.

Implantation of P ions in SiO{sub 2} layers with embedded Si nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Kachurin, G.A. E-mail: kachurin@isp.nsc.ru; Cherkova, S.G.; Volodin, V.A.; Kesler, V.G.; Gutakovsky, A.K.; Cherkov, A.G.; Bublikov, A.V.; Tetelbaum, D.I

2004-08-01

The effect of 10{sup 13}-10{sup 16} cm{sup -2} P ions implantation and of subsequent annealing on Si nanocrystals (Si-ncs), formed preliminarily in SiO{sub 2} layers by the ion-beam synthesis, has been studied. Photoluminescence (PL), Raman spectroscopy, high resolution electron microscopy (HREM), X-Ray Photoelectron Spectroscopy (XPS) and optical absorption were used for characterizations. The low fluence implantations have shown even individual displacements in Si-ncs quench their PL. Restoration of PL from partly damaged Si-ncs proceeds at annealing less than 1000 deg. C. In the low fluence implanted and annealed samples an increased Si-ncs PL has been found and ascribed to the radiation-induced shock crystallization of stressed Si nanoprecipitates. Annealing at temperatures under 1000 deg. C are inefficient when P ion fluences exceed 10{sup 14} cm{sup -2}, thus becoming capable to amorphize Si-ncs. High crystallization temperature of the amorphized Si-ncs is attributed to a counteraction of their shell layers. After implantation of the highest P fluences an enhanced recovery of PL was found from P concentration over 0.1 at.%. Raman spectroscopy and HREM showed an increased Si-ncs number in such layers. The effect resembles the impurity-enhanced crystallization, known for heavily doped bulk Si. This effect, along with the data obtained by XPS, is considered as an indication P atoms are really present inside the Si-ncs. However, no evidence of free electrons appearance has been observed. The fact is explained by an increased interaction of electrons with the donor nuclei in Si-ncs.

A room-temperature-operated Si LED with β-FeSi2 nanocrystals in the active layer: μW emission power at 1.5 μm

Science.gov (United States)

Shevlyagin, A. V.; Goroshko, D. L.; Chusovitin, E. A.; Balagan, S. A.; Dotsenko, S. A.; Galkin, K. N.; Galkin, N. G.; Shamirzaev, T. S.; Gutakovskii, A. K.; Latyshev, A. V.; Iinuma, M.; Terai, Y.

2017-03-01

This article describes the development of an Si-based light-emitting diode with β-FeSi2 nanocrystals embedded in the active layer. Favorable epitaxial conditions allow us to obtain a direct band gap type-I band alignment Si/β-FeSi2 nanocrystals/Si heterostructure with optical transition at a wavelength range of 1500-1550 nm at room temperature. Transmission electron microscopy data reveal strained, defect-free β-FeSi2 nanocrystals of diameter 6 and 25 nm embedded in the Si matrix. Intense electroluminescence was observed at a pumping current density as low as 0.7 A/cm2. The device reached an optical emission power of up to 25 μW at 9 A/cm2 with an external quantum efficiency of 0.009%. Watt-Ampere characteristic linearity suggests that the optical power margin of the light-emitting diode has not been exhausted. Band structure calculations explain the luminescence as being mainly due to radiative recombination in the large β-FeSi2 nanocrystals resulting from the realization of an indirect-to-direct band gap electronic configuration transformation arising from a favorable deformation of nanocrystals. The direct band gap structure and the measured short decay time of the luminescence of several tens of ns give rise to a fast operation speed for the device. Thus a method for developing a silicon-based photonic integrated circuit, combining complementary metal-oxide-semiconductor technology functionality and near-infrared light emission, is reported here.

Study of temperature-dependent charge conduction in silicon-nanocrystal/SiO_2 multilayers

International Nuclear Information System (INIS)

Mavilla, Narasimha Rao; Chavan, Vinayak; Solanki, Chetan Singh; Vasi, Juzer

2016-01-01

Silicon-nanocrystals (Si-NCs) realized by SiO_x _ 8 MV/cm; independent of temperature), while for lower electric fields (5–8 MV/cm) at higher temperatures, the trap-related Generalized Poole–Frenkel (GPF) is dominant. This signified the role of traps in modifying the conduction in bulk ICPCVD SiO_2 films. We then present the conduction in ML samples. For multilayer samples with SiO_2 sublayer thickness of 1.5 nm and 2.5 nm, Direct Tunneling (DT) is observed to be dominant, while for SiO_2 sublayer thickness of 3.5 nm, Space Charge Limited Conduction (SCLC) with exponential trap distribution is found to be the dominant conduction mechanism. This signifies the role of traps in modifying the conduction in Si-NC multilayer samples and SiO_2 sublayer thickness dependence. - Highlights: • Electrical conduction in SiO_2 film & Si-nanocrystal layers (Si-NCs) is reported. • SiO_2/SiO_x multilayer based Si-NCs were realized by Inductively Coupled plasma CVD. • For SiO_2 film, Fowler–Nordheim tunneling & Generalized Poole–Frenkel are observed. • For Si-NCs with thin SiO_2 sublayers (< 2.5 nm) Direct Tunneling is dominant. • For Si-NCs with 3.5 nm SiO_2 sublayers Space Charge Limited Conduction is dominant.

Influence of preparation and storage conditions on photoluminescence of porous silicon powder with embedded Si nanocrystals

International Nuclear Information System (INIS)

Bychto, Leszek; Balaguer, Maria; Pastor, Ester; Chirvony, Vladimir; Matveeva, Eugenia

2008-01-01

The time changes of photoluminescence (PL) characteristics of porous silicon (porSi) powder during storing in different ambients have been reported. A porous silicon material with embedded Si nanocrystals of size of few nanometers was prepared by an electrochemical method from 10 to 20 Ωcm p-type Si wafers, and both constant and pulse current anodization regimes were used. A powder with a submicron average particle size was obtained by simple mechanical lift-off of the porous layer followed by additional manual milling. The air, hexane, and water as storage media were used, and modification by a nonionic surfactant (undecylenic acid) of the porSi surface was applied in the latter case. Dependence of PL characteristics on preparation and storage conditions was then studied. A remarkable blue shift of a position of PL maximum was observed in time for porSi powders in each storage media. In water suspension a many-fold build-up (10-30) of PL intensity in a time scale of few days was accompanied by an observed blue shift. Photoluminescence time behavior of porSi powders was described by a known mechanism of the change of porSi PL from free exciton emission of Si nanocrystals to luminescence of localized oxidized states on the Si nanocrystal surface.

Influence of preparation and storage conditions on photoluminescence of porous silicon powder with embedded Si nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Bychto, Leszek, E-mail: leszek.bychto@tu.koszalin.pl; Balaguer, Maria; Pastor, Ester; Chirvony, Vladimir; Matveeva, Eugenia, E-mail: eumat@upvnet.upv.e [Technical University of Valencia, Nanophotonics Technology Center (Spain)

2008-12-15

The time changes of photoluminescence (PL) characteristics of porous silicon (porSi) powder during storing in different ambients have been reported. A porous silicon material with embedded Si nanocrystals of size of few nanometers was prepared by an electrochemical method from 10 to 20 {Omega}cm p-type Si wafers, and both constant and pulse current anodization regimes were used. A powder with a submicron average particle size was obtained by simple mechanical lift-off of the porous layer followed by additional manual milling. The air, hexane, and water as storage media were used, and modification by a nonionic surfactant (undecylenic acid) of the porSi surface was applied in the latter case. Dependence of PL characteristics on preparation and storage conditions was then studied. A remarkable blue shift of a position of PL maximum was observed in time for porSi powders in each storage media. In water suspension a many-fold build-up (10-30) of PL intensity in a time scale of few days was accompanied by an observed blue shift. Photoluminescence time behavior of porSi powders was described by a known mechanism of the change of porSi PL from free exciton emission of Si nanocrystals to luminescence of localized oxidized states on the Si nanocrystal surface.

Influence of preparation and storage conditions on photoluminescence of porous silicon powder with embedded Si nanocrystals

Science.gov (United States)

Bychto, Leszek; Balaguer, Maria; Pastor, Ester; Chirvony, Vladimir; Matveeva, Eugenia

2008-12-01

The time changes of photoluminescence (PL) characteristics of porous silicon (porSi) powder during storing in different ambients have been reported. A porous silicon material with embedded Si nanocrystals of size of few nanometers was prepared by an electrochemical method from 10 to 20 Ωcm p-type Si wafers, and both constant and pulse current anodization regimes were used. A powder with a submicron average particle size was obtained by simple mechanical lift-off of the porous layer followed by additional manual milling. The air, hexane, and water as storage media were used, and modification by a nonionic surfactant (undecylenic acid) of the porSi surface was applied in the latter case. Dependence of PL characteristics on preparation and storage conditions was then studied. A remarkable blue shift of a position of PL maximum was observed in time for porSi powders in each storage media. In water suspension a many-fold build-up (10-30) of PL intensity in a time scale of few days was accompanied by an observed blue shift. Photoluminescence time behavior of porSi powders was described by a known mechanism of the change of porSi PL from free exciton emission of Si nanocrystals to luminescence of localized oxidized states on the Si nanocrystal surface.

Role of the interface region on the optoelectronic properties of silicon nanocrystals embedded in SiO2

International Nuclear Information System (INIS)

Daldosso, N.; Dalba, G.; Fornasini, P.; Grisenti, R.; Pavesi, L.; Luppi, M.; Magri, R.; Ossicini, S.; Degoli, E.; Rocca, F.; Boninelli, S.; Priolo, F.; Spinella, C.; Iacona, F.

2003-01-01

Light-emitting silicon nanocrystals embedded in SiO 2 have been investigated by x-ray absorption measurements in total electron and photoluminescence yields, by energy filtered transmission electron microscopy and by ab initio total energy calculations. Both experimental and theoretical results show that the interface between the silicon nanocrystals and the surrounding SiO 2 is not sharp: an intermediate region of amorphous nature and variable composition links the crystalline Si with the amorphous stoichiometric SiO 2 . This region plays an active role in the light-emission process

Photoluminescence of CdTe nanocrystals grown by pulsed laser ablation on a template of Si nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Guillen-Cervantes, A.; Silva-Lopez, H.; Becerril-Silva, M.; Arias-Ceron, J.S.; Campos-Gonzalez, E.; Zelaya-Angel, O. [CINVESTAV-IPN, Physics Department, Apdo. Postal 14-740, Mexico (Mexico); Medina-Torres, A.C. [Escuela Superior de Fisica y Matematicas del IPN, Mexico (Mexico)

2014-11-12

CdTe nanocrystals were grown on eroded Si (111) substrates at room temperature by pulsed laser ablation. Before growth, Si substrates were subjected to different erosion time in order to investigate the effect on the CdTe samples. The erosion process consists of exposition to a pulsed high-voltage electric arc. The surface consequence of the erosion process consists of Si nanoparticles which acted as a template for the growth of CdTe nanocrystals. CdTe samples were studied by X-ray diffraction (XRD), room temperature photoluminescence (RT PL) and high-resolution transmission electron microscopy (HRTEM). CdTe nanocrystals grew in the stable cubic phase, according to XRD spectra. A strong visible emission was detected in photoluminescence (PL) experiments. The PL signal was centered at 540 nm (∝2.34 eV). With the effective mass approximation, the size of the CdTe crystals was estimated around 3.5 nm. HRTEM images corroborated the physical characteristics of CdTe nanocrystals. These results could be useful for the development of CdTe optoelectronic devices. (orig.)

SiC nanocrystals as Pt catalyst supports for fuel cell applications

DEFF Research Database (Denmark)

Dhiman, Rajnish; Morgen, Per; Skou, E.M.

2013-01-01

A robust catalyst support is pivotal to Proton Exchange Membrane Fuel Cells (PEMFCs) to overcome challenges such as catalyst support corrosion, low catalyst utilization and overall capital cost. SiC is a promising candidate material which could be applied as a catalyst support in PEMFCs. Si...... on the nanocrystals of SiC-SPR and SiC-NS by the polyol method. The SiC substrates are subjected to an acid treatment to introduce the surface groups, which help to anchor the Pt nano-catalysts. These SiC based catalysts have been found to have a higher electrochemical activity than commercially available Vulcan...... based catalysts (BASF & HISPEC). These promising results signal a new era of SiC based catalysts for fuel cell applications....

SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers

Science.gov (United States)

Vieira, E. M. F.; Toudert, J.; Rolo, A. G.; Parisini, A.; Leitão, J. P.; Correia, M. R.; Franco, N.; Alves, E.; Chahboun, A.; Martín-Sánchez, J.; Serna, R.; Gomes, M. J. M.

2017-08-01

In this work, we report on the production of regular (SiGe/SiO2)20 multilayer structures by conventional RF-magnetron sputtering, at 350 °C. Transmission electron microscopy, scanning transmission electron microscopy, raman spectroscopy, and x-ray reflectometry measurements revealed that annealing at a temperature of 1000 °C leads to the formation of SiGe nanocrystals between SiO2 thin layers with good multilayer stability. Reducing the nominal SiGe layer thickness (t SiGe) from 3.5-2 nm results in a transition from continuous SiGe crystalline layer (t SiGe ˜ 3.5 nm) to layers consisting of isolated nanocrystals (t SiGe ˜ 2 nm). Namely, in the latter case, the presence of SiGe nanocrystals ˜3-8 nm in size, is observed. Spectroscopic ellipsometry was applied to determine the evolution of the onset in the effective optical absorption, as well as the dielectric function, in SiGe multilayers as a function of the SiGe thickness. A clear blue-shift in the optical absorption is observed for t SiGe ˜ 2 nm multilayer, as a consequence of the presence of isolated nanocrystals. Furthermore, the observed near infrared values of n = 2.8 and k = 1.5 are lower than those of bulk SiGe compounds, suggesting the presence of electronic confinement effects in the nanocrystals. The low temperature (70 K) photoluminescence measurements performed on annealed SiGe/SiO2 nanostructures show an emission band located between 0.7-0.9 eV associated with the development of interface states between the formed nanocrystals and surrounding amorphous matrix.

Trapping time of excitons in Si nanocrystals embedded in a SiO2 matrix

Science.gov (United States)

de Jong, E. M. L. D.; de Boer, W. D. A. M.; Yassievich, I. N.; Gregorkiewicz, T.

2017-05-01

Silicon (Si) nanocrystals (NCs) are of great interest for many applications, ranging from photovoltaics to optoelectonics. The photoluminescence quantum yield of Si NCs dispersed in SiO2 is limited, suggesting the existence of very efficient processes of nonradiative recombination, among which the formation of a self-trapped exciton state on the surface of the NC. In order to improve the external quantum efficiency of these systems, the carrier relaxation and recombination need to be understood more thoroughly. For that purpose, we perform transient-induced absorption spectroscopy on Si NCs embedded in a SiO2 matrix over a broad probe range for NCs of average sizes from 2.5 to 5.5 nm. The self-trapping of free excitons on surface-related states is experimentally and theoretically discussed and found to be dependent on the NC size. These results offer more insight into the self-trapped exciton state and are important to increase the optical performance of Si NCs.

Ge nanocrystals embedded in ultrathin Si3N4 multilayers with SiO2 barriers

Science.gov (United States)

Bahariqushchi, R.; Gundogdu, Sinan; Aydinli, A.

2017-04-01

Multilayers of germanium nanocrystals (NCs) embedded in thin films of silicon nitride matrix separated with SiO2 barriers have been fabricated using plasma enhanced chemical vapor deposition (PECVD). SiGeN/SiO2 alternating bilayers have been grown on quartz and Si substrates followed by post annealing in Ar ambient from 600 to 900 °C. High resolution transmission electron microscopy (HRTEM) as well as Raman spectroscopy show good crystallinity of Ge confined to SiGeN layers in samples annealed at 900 °C. Strong compressive stress for SiGeN/SiO2 structures were observed through Raman spectroscopy. Size, as well as NC-NC distance were controlled along the growth direction for multilayer samples by varying the thickness of bilayers. Visible photoluminescence (PL) at 2.3 and 3.1 eV with NC size dependent intensity is observed and possible origin of PL is discussed.

"Nanocrystal bilayer for tandem catalysis"

Energy Technology Data Exchange (ETDEWEB)

Yamada, Yusuke; Tsung, Chia Kuang; Huang, Wenyu; Huo, Ziyang; E.Habas, Susan E; Soejima, Tetsuro; Aliaga, Cesar E; Samorjai, Gabor A; Yang, Peidong

2011-01-24

Supported catalysts are widely used in industry and can be optimized by tuning the composition and interface of the metal nanoparticles and oxide supports. Rational design of metal-metal oxide interfaces in nanostructured catalysts is critical to achieve better reaction activities and selectivities. We introduce here a new class of nanocrystal tandem catalysts that have multiple metal-metal oxide interfaces for the catalysis of sequential reactions. We utilized a nanocrystal bilayer structure formed by assembling platinum and cerium oxide nanocube monolayers of less than 10 nm on a silica substrate. The two distinct metal-metal oxide interfaces, CeO2-Pt and Pt-SiO2, can be used to catalyse two distinct sequential reactions. The CeO2-Pt interface catalysed methanol decomposition to produce CO and H2, which were subsequently used for ethylene hydroformylation catalysed by the nearby Pt-SiO2 interface. Consequently, propanal was produced selectively from methanol and ethylene on the nanocrystal bilayer tandem catalyst. This new concept of nanocrystal tandem catalysis represents a powerful approach towards designing high-performance, multifunctional nanostructured catalysts

Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing

Energy Technology Data Exchange (ETDEWEB)

Krivyakin, G. K.; Volodin, V. A., E-mail: volodin@isp.nsc.ru; Kochubei, S. A.; Kamaev, G. N. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Purkrt, A.; Remes, Z. [Institute of Physics ASCR (Czech Republic); Fajgar, R. [Institute of Chemical Process Fundamentals of the ASCR (Czech Republic); Stuchliková, T. H.; Stuchlik, J. [Institute of Physics ASCR (Czech Republic)

2016-07-15

Silicon nanocrystals are formed in the i layers of p–i–n structures based on a-Si:H using pulsed laser annealing. An excimer XeCl laser with a wavelength of 308 nm and a pulse duration of 15 ns is used. The laser fluence is varied from 100 (below the melting threshold) to 250 mJ/cm{sup 2} (above the threshold). The nanocrystal sizes are estimated by analyzing Raman spectra using the phonon confinement model. The average is from 2.5 to 3.5 nm, depending on the laser-annealing parameters. Current–voltage measurements show that the fabricated p–i–n structures possess diode characteristics. An electroluminescence signal in the infrared (IR) range is detected for the p–i–n structures with Si nanocrystals; the peak position (0.9–1 eV) varies with the laser-annealing parameters. Radiative transitions are presumably related to the nanocrystal–amorphous-matrix interface states. The proposed approach can be used to produce light-emitting diodes on non-refractory substrates.

Effect of Si implantation on the microstructure of silicon nanocrystals and surrounding SiO2 layer

International Nuclear Information System (INIS)

Ross, G.G.; Smirani, R.; Levitcharsky, V.; Wang, Y.Q.; Veilleux, G.; Saint-Jacques, R.G.

2005-01-01

Si nanocrystals (Si-nc) embedded in a SiO 2 layer have been characterized by means of transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). For local Si concentration in excess 8 x 10 21 Si + /cm 3 , the size of the Si-nc was found to be ∼3 nm and comparatively homogeneous throughout the whole implanted layer. For local Si concentration in excess of ∼2.4 x 10 22 Si + /cm 3 , the Si-nc diameter ranges from ∼2 to ∼12 nm in the sample, the Si-nc in the middle region of the implanted layer being bigger than those near the surface and the bottom of the layer. Also, Si-nc are visible deeper than the implanted depth. Characterization by XPS shows that a large quantity of oxygen was depleted from the first ∼25 nm in this sample (also visible on TEM image) and most of the SiO 2 bonds have been replaced by Si-O bonds. Experimental and simulation results suggest that a local Si concentration in excess of ∼3 x 10 21 Si/cm 3 is required for the production of Si-nc

Elucidation of the enhanced ferromagnetic origin in Mn-doped ZnO nanocrystals embedded into a SiO₂ matrix

Energy Technology Data Exchange (ETDEWEB)

Lee, Sejoon; Lee, Youngmin; Kim, Deukyoung [Dongguk University, Seoul (Korea, Republic of)

2013-01-01

The origin of the enhanced room temperature ferromagnetism in Mn-doped ZnO (ZnO:Mn) nanocrystals is investigated. ZnO:Mn nanocrystals, which were fabricated by using a laser irradiation method with a 248-nm KrF excimer laser, exhibited two-times increase in the spontaneous magnetization (∼0.4 emu/cm³ at 300 K) compared to the ZnO:Mn thin film (∼0.2 emu/cm³ at 300 K). The increased exchange integral of J₁/k{sub B} = 51.6 K in ZnO:Mn nanocrystals, in comparison with the ZnO:Mn thin film (J₁/k{sub B} = 46.9 K), is indicative of the enhanced ferromagnetic exchange interaction. This is attributed to the large number of acceptor defects in the SiO₂-capped ZnO:Mn nanocrystals. Namely, the holes bound to the acceptor defects form microscopic bound-magnetic-polarons with Mn ions; hence, long-range ferromagnetic coupling is enhanced. The results suggest that ferromagnetism in ZnO-based dilute magnetic semiconductors can be controlled by modulating the density of native point defects, which can be chemically and thermodynamically modified during the material synthesis or preparation.

Annealing temperature and environment effects on ZnO nanocrystals embedded in SiO2: a photoluminescence and TEM study.

Science.gov (United States)

Pita, Kantisara; Baudin, Pierre; Vu, Quang Vinh; Aad, Roy; Couteau, Christophe; Lérondel, Gilles

2013-12-06

We report on efficient ZnO nanocrystal (ZnO-NC) emission in the near-UV region. We show that luminescence from ZnO nanocrystals embedded in a SiO2 matrix can vary significantly as a function of the annealing temperature from 450°C to 700°C. We manage to correlate the emission of the ZnO nanocrystals embedded in SiO2 thin films with transmission electron microscopy images in order to optimize the fabrication process. Emission can be explained using two main contributions, near-band-edge emission (UV range) and defect-related emissions (visible). Both contributions over 500°C are found to be size dependent in intensity due to a decrease of the absorption cross section. For the smallest-size nanocrystals, UV emission can only be accounted for using a blueshifted UV contribution as compared to the ZnO band gap. In order to further optimize the emission properties, we have studied different annealing atmospheres under oxygen and under argon gas. We conclude that a softer annealing temperature at 450°C but with longer annealing time under oxygen is the most preferable scenario in order to improve near-UV emission of the ZnO nanocrystals embedded in an SiO2 matrix.

Influence of the crystallization process on the luminescence of multilayers of SiGe nanocrystals embedded in SiO2

International Nuclear Information System (INIS)

Avella, M.; Prieto, A.C.; Jimenez, J.; Rodriguez, A.; Sangrador, J.; Rodriguez, T.; Ortiz, M.I.; Ballesteros, C.

2008-01-01

Multilayers of SiGe nanocrystals embedded in an oxide matrix have been fabricated by low-pressure chemical vapor deposition of SiGe and SiO 2 onto Si wafers (in a single run at 390 deg. C and 50 mTorr, using GeH 4 , Si 2 H 6 and O 2 ) followed by a rapid thermal annealing treatment to crystallize the SiGe nanoparticles. The main emission band is located at 400 nm in both cathodoluminescence and photoluminescence experiments at 80 K and also at room temperature. The annealing conditions (temperatures ranging from 700 to 1000 deg. C and for times of 30 and 60 s) have been investigated in samples with different diameter of the nanoparticles (from ∼3 to ≥5 nm) and oxide interlayer thickness (15 and 35 nm) in order to establish a correlation between the crystallization of the nanoparticles, the degradation of their composition by Ge diffusion and the intensity of the luminescence emission band. Structures with small nanoparticles (3-4.5 nm) separated by thick oxide barriers (∼35 nm) annealed at 900 deg. C for 60 s yield the maximum intensity of the luminescence. An additional treatment at 450 deg. C in forming gas for dangling-bond passivation increases the intensity of the luminescence band by 25-30%

Coupling between Ge-nanocrystals and defects in SiO2

International Nuclear Information System (INIS)

Skov Jensen, J.; Franzo, G.; Leervad Petersen, T.P.; Pereira, R.; Chevallier, J.; Christian Petersen, M.; Bech Nielsen, B.; Nylandsted Larsen, A.

2006-01-01

Room temperature photoluminescence (PL) at around 600 nm from magnetron-sputtered SiO 2 films co-doped with Ge is reported. The PL signal is observed in pure SiO 2 , however, its intensity increases significantly in the presence of Ge-nanocrystals (Ge-nc). The PL intensity has been optimized by varying the temperature of heat treatment, type of gas during heat treatment, concentration of Ge in the SiO 2 films, and gas pressure during deposition. Maximum intensity occurs when Ge-nc of around 3.5 nm are present in large concentration in SiO 2 layers deposited at fairly high gas pressure. Based on time resolved PL, and PL measurements after α-particle irradiation or H passivation, we attribute the origin of the PL to a defect in SiO 2 (probably an O deficiency) that is excited through an energy transfer from Ge-nc. There is no direct PL from the Ge-nc; however, there is a strong coupling between excitons created in the Ge-nc and the SiO 2 defect

Enhanced formation of Ge nanocrystals in Ge : SiO2 layers by swift heavy ions

International Nuclear Information System (INIS)

Antonova, I V; Volodin, V A; Marin, D M; Skuratov, V A; Smagulova, S A; Janse van Vuuren, A; Neethling, J; Jedrzejewski, J; Balberg, I

2012-01-01

In this paper we report the ability of swift heavy Xe ions with an energy of 480 MeV and a fluence of 10 12 cm -2 to enhance the formation of Ge nanocrystals within SiO 2 layers with variable Ge contents. These Ge-SiO 2 films were fabricated by the co-sputtering of Ge and quartz sources which followed various annealing procedures. In particular, we found that the irradiation of the Ge : SiO 2 films with subsequent annealing at 500 °C leads to the formation of a high concentration of nanocrystals (NCs) with a size of 2-5 nm, whereas without irradiation only amorphous inclusions were observed. This effect, as evidenced by Raman spectra, is enhanced by pre-irradiation at 550 °C and post-irradiation annealing at 600 °C, which also leads to the observation of room temperature visible photoluminescence. (paper)

Annealing-induced evolution of optical properties of the multilayered nanoperiodic SiOx/ZrO2 system containing Si nanoclusters

International Nuclear Information System (INIS)

Ershov, A. V.; Tetelbaum, D. I.; Chugrov, I. A.; Mashin, A. I.; Mikhaylov, A. N.; Nezhdanov, A. V.; Ershov, A. A.; Karabanova, I. A.

2011-01-01

The photoluminescence, infrared absorption, and Raman spectra of amorphous multilayered nanoperiodic a-SiO x /ZrO 2 structures produced by vacuum evaporation and then annealed at different temperatures (500–1100°C) are studied. It is established that the evolution of the optical properties with increasing annealing temperature is controlled by sequential transformation of Si clusters formed in the SiO x layers from nonphase inclusions to amorphous clusters and then to nanocrystals. The finally formed nanocrystals are limited in sizes by the thickness of the initial SiO x layers and by chemical reactions with ZrO 2 .

Growth and relaxation processes in Ge nanocrystals on free-standing Si(001) nanopillars.

Science.gov (United States)

Kozlowski, G; Zaumseil, P; Schubert, M A; Yamamoto, Y; Bauer, J; Schülli, T U; Tillack, B; Schroeder, T

2012-03-23

We study the growth and relaxation processes of Ge crystals selectively grown by chemical vapour deposition on free-standing 90 nm wide Si(001) nanopillars. Epi-Ge with thickness ranging from 4 to 80 nm was characterized by synchrotron based x-ray diffraction and transmission electron microscopy. We found that the strain in Ge nanostructures is plastically released by nucleation of misfit dislocations, leading to degrees of relaxation ranging from 50 to 100%. The growth of Ge nanocrystals follows the equilibrium crystal shape terminated by low surface energy (001) and {113} facets. Although the volumes of Ge nanocrystals are homogeneous, their shape is not uniform and the crystal quality is limited by volume defects on {111} planes. This is not the case for the Ge/Si nanostructures subjected to thermal treatment. Here, improved structure quality together with high levels of uniformity of the size and shape is observed.

Elucidation of the enhanced ferromagnetic origin in Mn-doped ZnO nanocrystals embedded into a SiO2 matrix

International Nuclear Information System (INIS)

Lee, Sejoon; Lee, Youngmin; Kim, Deukyoung

2013-01-01

The origin of the enhanced room temperature ferromagnetism in Mn-doped ZnO (ZnO:Mn) nanocrystals is investigated. ZnO:Mn nanocrystals, which were fabricated by using a laser irradiation method with a 248-nm KrF excimer laser, exhibited two-times increase in the spontaneous magnetization (∼0.4 emu/cm 3 at 300 K) compared to the ZnO:Mn thin film (∼0.2 emu/cm 3 at 300 K). The increased exchange integral of J 1 /k B = 51.6 K in ZnO:Mn nanocrystals, in comparison with the ZnO:Mn thin film (J 1 /k B = 46.9 K), is indicative of the enhanced ferromagnetic exchange interaction. This is attributed to the large number of acceptor defects in the SiO 2 -capped ZnO:Mn nanocrystals. Namely, the holes bound to the acceptor defects form microscopic bound-magnetic-polarons with Mn ions; hence, long-range ferromagnetic coupling is enhanced. The results suggest that ferromagnetism in ZnO-based dilute magnetic semiconductors can be controlled by modulating the density of native point defects, which can be chemically and thermodynamically modified during the material synthesis or preparation.

Ion-beam synthesis and photoluminescence of SiC nanocrystals assisted by MeV-heavy-ion-beam annealing

International Nuclear Information System (INIS)

Khamsuwan, J.; Intarasiri, S.; Kirkby, K.; Chu, P.K.; Singkarat, S.; Yu, L.D.

2012-01-01

This work explored a novel way to synthesize silicon carbide (SiC) nanocrystals for photoluminescence. Carbon ions at 90 keV were implanted in single crystalline silicon wafers at elevated temperature, followed by irradiation using xenon ion beams at an energy of 4 MeV with two low fluences of 5 × 10 13 and 1 × 10 14 ions/cm 2 at elevated temperatures for annealing. X-ray diffraction, Raman scattering, infrared spectroscopy and transmission electron microscopy were used to characterize the formation of nanocrystalline SiC. Photoluminescence was measured from the samples. The results demonstrated that MeV-heavy-ion-beam annealing could indeed induce crystallization of SiC nanocrystals and enhance emission of photoluminescence with violet bands dominance due to the quantum confinement effect.

Optical properties and ensemble characteristics of size purified Silicon nanocrystals

Science.gov (United States)

Miller, Joseph Bradley

Nanotechnology is at the forefront of current scientific research and nanocrystals are being hailed as the 'artificial' atoms of the 21st century. Semiconducting silicon nanocrystals (SiNCs) are prime candidates for potential commercial applications because of silicon's already ubiquitous presence in the semiconductor industry, nontoxicity and abundance in nature. For realization of these potential applications, the properties and behavior of SiNCs need to be understood and enhanced. In this report, some of the main SiNC synthesis schemes are discussed, including those we are currently experimenting with to create our own SiNCs and the one utilized to create the SiNCs used in this study. The underlying physics that governs the unique behavior of SiNCs is then presented. The properties of the as-produced SiNCs are determined to depend strongly on surface passivation and environment. Size purification, an important aspect of nanomaterial utilization, was successfully performed on our SiNCs though density gradient ultracentrifugation. We demonstrate that the size-purified fractions exhibit an enhanced ability for colloidal self-assembly, with better aligned nanocrystal energy levels which promotes greater photostability in close-packed films and produces a slight increase in photoluminescence (PL) quantum yield. The qualities displayed by the fractions are exploited to form SiNC clusters that exhibit photostable PL. An analysis of SiNC cluster (from individual nanocrystals to collections of more than one thousand) blinking and PL shows an improvement in their PL emitting 'on' times. Pure SiNC films and SiNC-polymer nanocomposites are created and the dependence of their PL on temperature is measured. For such nanocomposites, the coupling between the 'coffee-ring' effect and liquid-liquid phase separation is also examined for ternary mixtures of solvent, polymer and semiconducting nanocrystal. We discover that with the right SiNC-polymer concentration and polymer

Atomistic simulation of the thermal conductivity in amorphous SiO2 matrix/Ge nanocrystal composites

Science.gov (United States)

Kuryliuk, Vasyl V.; Korotchenkov, Oleg A.

2017-04-01

We use nonequilibrium molecular dynamics computer simulations with the Tersoff potential aiming to provide a comprehensive picture of the thermal conductivity of amorphous SiO2 (a-SiO2) matrix with embedded Ge nanocrystals (nc-Ge). The modelling predicts the a-SiO2 matrix thermal conductivity in a temperature range of 50 fair agreement with experiment at around room temperature. It is worth noticing that the predicted room-temperature thermal conductivity in a-SiO2 is in very good agreement with the experimental result, which is in marked contrast with the thermal conductivity calculated employing the widely used van Beest-Kramer-van Santen (BKS) potential. We show that the thermal conductivity of composite nc-Ge/a-SiO2 systems decreases steadily with increasing the volume fraction of Ge inclusions, indicative of enhanced interface scattering of phonons imposed by embedded Ge nanocrystals. We also observe that increasing the volume fractions above a certain threshold value results in a progressively increased thermal conductivity of the nanocomposite, which can be explained by increasing volume fraction of a better thermally conducting Ge. Finally, non-equilibrium molecular dynamics simulations with the Tersoff potential are promising for computing the thermal conductivity of nanocomposites based on amorphous SiO2 and can be readily scaled to more complex composite structures with embedded nanoparticles, which thus help design nanocomposites with desired thermal properties.

High-dose MeV electron irradiation of Si-SiO2 structures implanted with high doses Si+

Science.gov (United States)

Kaschieva, S.; Angelov, Ch; Dmitriev, S. N.

2018-03-01

The influence was studied of 22-MeV electron irradiation on Si-SiO2 structures implanted with high-fluence Si+ ions. Our earlier works demonstrated that Si redistribution is observed in Si+-ion-implanted Si-SiO2 structures (after MeV electron irradiation) only in the case when ion implantation is carried out with a higher fluence (1016 cm-2). We focused our attention on the interaction of high-dose MeV electron irradiation (6.0×1016 cm-2) with n-Si-SiO2 structures implanted with Si+ ions (fluence 5.4×1016 cm-2 of the same order magnitude). The redistribution of both oxygen and silicon atoms in the implanted Si-SiO2 samples after MeV electron irradiation was studied by Rutherford back-scattering (RBS) spectroscopy in combination with a channeling technique (RBS/C). Our results demonstrated that the redistribution of oxygen and silicon atoms in the implanted samples reaches saturation after these high doses of MeV electron irradiation. The transformation of amorphous SiO2 surface into crystalline Si nanostructures (after MeV electron irradiation) was evidenced by atomic force microscopy (AFM). Silicon nanocrystals are formed on the SiO2 surface after MeV electron irradiation. The shape and number of the Si nanocrystals on the SiO2 surface depend on the MeV electron irradiation, while their size increases with the dose. The mean Si nanocrystals height is 16-20 nm after irradiation with MeV electrons at the dose of 6.0×1016 cm-2.

Emission Mechanisms of Si Nanocrystals and Defects in SiO2 Materials

Directory of Open Access Journals (Sweden)

José Antonio Rodríguez

2014-01-01

Full Text Available Motivated by the necessity to have all silicon optoelectronic circuits, researchers around the world are working with light emitting silicon materials. Such materials are silicon dielectric compounds with silicon content altered, such as silicon oxide or nitride, enriched in different ways with Silicon. Silicon Rich Oxide or silicon dioxide enriched with silicon, and silicon rich nitride are without a doubt the most promising materials to reach this goal. Even though they are subjected to countless studies, the light emission phenomenon has not been completely clarified. So, a review of different proposals presented to understand the light emission phenomenon including emissions related to nanocrystals and to point defects in SiO2 is presented.

Phosphorus doping of Si nanocrystals: Interface defects and charge compensation

International Nuclear Information System (INIS)

Stegner, A.R.; Pereira, R.N.; Klein, K.; Wiggers, H.; Brandt, M.S.; Stutzmann, M.

2007-01-01

Using electron paramagnetic resonance (EPR), Fourier-transform infrared absorption (FTIR) and temperature programmed desorption (TPD), we have investigated the doping of silicon nanocrystals (Si-ncs) and the interaction between intrinsic defects and dopants. Si-ncs were produced in a low-pressure microwave plasma reactor using silane as precursor gas. Phosphorus doping was achieved by addition of phosphine to the precursor gas. The low temperature EPR spectra of all P-doped samples display a line at g=1.998, which is the fingerprint of substitutional P in crystalline silicon for [P]>10 18 cm -3 . In addition, the characteristic hyperfine signature of P in Si is also observed for samples with nominal P doping levels below 10 19 cm -3 . Two more features are observed in our EPR spectra: a broad band located at g=2.0056, due to isotropic Si dangling bonds (Si-dbs), and an axially symmetric powder pattern (g perpendicular =2.0087,g parallel =2.0020) arising from Si-dbs at the interface between the crystalline Si core and a native oxide shell. The formation of this oxide layer and the presence of different H-termination configurations are revealed by FTIR spectroscopy. The density of Si-dbs is reduced in P-doped samples, indicating a sizable compensation of the doping by Si-dbs. This compensation effect was verified by H desorption, which enhances the density of Si-dbs, in combination with TPD and FTIR

Strained interface defects in silicon nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Lee, Benjamin G.; Stradins, Paul [National Center for Photovoltaics, National Renewable Energy Laboratory, Golden, CO (United States); Hiller, Daniel; Zacharias, Margit [IMTEK - Faculty of Engineering, Albert-Ludwigs-University Freiburg (Germany); Luo, Jun-Wei; Beard, Matthew C. [Chemical and Materials Science, National Renewable Energy Laboratory, Golden, CO (United States); Semonin, Octavi E. [Chemical and Materials Science, National Renewable Energy Laboratory, Golden, CO (United States); Department of Physics, University of Colorado, Boulder, CO (United States)

2012-08-07

The surface of silicon nanocrystals embedded in an oxide matrix can contain numerous interface defects. These defects strongly affect the nanocrystals' photoluminescence efficiency and optical absorption. Dangling-bond defects are nearly eliminated by H{sub 2} passivation, thus decreasing absorption below the quantum-confined bandgap and enhancing PL efficiency by an order of magnitude. However, there remain numerous other defects seen in absorption by photothermal deflection spectroscopy; these defects cause non-radiative recombination that limits the PL efficiency to <15%. Using atomistic pseudopotential simulations, we attribute these defects to two specific types of distorted bonds: Si-Si and bridging Si-O-Si bonds between two Si atoms at the nanocrystal surface. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Effect of hydrogen ion beam treatment on Si nanocrystal/SiO_2 superlattice-based memory devices

International Nuclear Information System (INIS)

Fu, Sheng-Wen; Chen, Hui-Ju; Wu, Hsuan-Ta; Chuang, Bing-Ru; Shih, Chuan-Feng

2016-01-01

Graphical abstract: - Highlights: • Memory window and retention properties are improved employing HIBAS technique. • The O/Si ratio and radiative recombination are changed by HIBAS. • Memory properties are affected not only by Si NCs and O/Si ratio but also the RDCs. • The mechanism of hydrogen ion beam alters the memory properties is investigated. - Abstract: This study presents a novel route for synthesizing silicon-rich oxide (SRO)/SiO_2 superlattice-based memory devices with an improved memory window and retention properties. The SiO_2 and SRO superlattices are deposited by reactive sputtering. Specifically, the hydrogen ion beam is used to irradiate the SRO layer immediately after its deposition in the vacuum chamber. The use of the hydrogen ion beam was determined to increase oxygen content and the density of the Si nanocrystals. The memory window increased from 16 to 25.6 V, and the leakage current decreased significantly by two orders, to under ±20 V, for the hydrogen ion beam-prepared devices. This study investigates the mechanism into how hydrogen ion beam treatment alters SRO films and influences memory properties.

Inhibitive formation of nanocavities by introduction of Si atoms in Ge nanocrystals produced by ion implantation

Energy Technology Data Exchange (ETDEWEB)

Cai, R. S.; Shang, L.; Liu, X. H.; Zhang, Y. J. [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); Wang, Y. Q., E-mail: yqwang@qdu.edu.cn, E-mail: barba@emt.inrs.ca [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); College of Physics Science, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); Ross, G. G.; Barba, D., E-mail: yqwang@qdu.edu.cn, E-mail: barba@emt.inrs.ca [INRS-Énergie, Matériaux et Télécommunications, 1650 boulevard Lionel-Boulet, Varennes Québec J3X 1S2 (Canada)

2014-05-28

Germanium nanocrystals (Ge-nc) were successfully synthesized by co-implantation of Si and Ge ions into a SiO{sub 2} film thermally grown on (100) Si substrate and fused silica (pure SiO{sub 2}), respectively, followed by subsequent annealing at 1150 °C for 1 h. Transmission electron microscopy (TEM) examinations show that nanocavities only exist in the fused silica sample but not in the SiO{sub 2} film on a Si substrate. From the analysis of the high-resolution TEM images and electron energy-loss spectroscopy spectra, it is revealed that the absence of nanocavities in the SiO{sub 2} film/Si substrate is attributed to the presence of Si atoms inside the formed Ge-nc. Because the energy of Si-Ge bonds (301 kJ·mol{sup −1}) are greater than that of Ge-Ge bonds (264 kJ·mol{sup −1}), the introduction of the Si-Ge bonds inside the Ge-nc can inhibit the diffusion of Ge from the Ge-nc during the annealing process. However, for the fused silica sample, no crystalline Si-Ge bonds are detected within the Ge-nc, where strong Ge outdiffusion effects produce a great number of nanocavities. Our results can shed light on the formation mechanism of nanocavities and provide a good way to avoid nanocavities during the process of ion implantation.

Enhancing optical gains in Si nanocrystals via hydrogenation and cerium ion doping

International Nuclear Information System (INIS)

Wang, Dong-Chen; Li, Yan-Li; Song, Sheng-Chi; Guo, Wen-Ping; Lu, Ming; Chen, Jia-Rong

2014-01-01

We report optical gain enhancements in Si nanocrystals (Si-NCs) via hydrogenation and Ce 3+ ion doping. Variable stripe length technique was used to obtain gains. At 0.3 W/cm 2 pumping power density of pulsed laser, net gains were observed together with gain enhancements after hydrogenation and/or Ce 3+ ion doping; gains after loss corrections were between 89.52 and 341.95 cm −1 ; and the photoluminescence (PL) lifetime was found to decrease with the increasing gain enhancement. At 0.04 W/cm 2 power density, however, no net gain was found and the PL lifetime increased with the increasing PL enhancement. The results were discussed according to stimulated and spontaneous excitation and de-excitation mechanisms of Si-NCs.

Study of temperature-dependent charge conduction in silicon-nanocrystal/SiO{sub 2} multilayers

Energy Technology Data Exchange (ETDEWEB)

Mavilla, Narasimha Rao; Chavan, Vinayak [National Centre for Photovoltaic Research and Education (NCPRE), Powai, Mumbai 400 076 (India); Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400 076 (India); Solanki, Chetan Singh [National Centre for Photovoltaic Research and Education (NCPRE), Powai, Mumbai 400 076 (India); Department of Energy Science and Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400 076 (India); Vasi, Juzer [National Centre for Photovoltaic Research and Education (NCPRE), Powai, Mumbai 400 076 (India); Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400 076 (India)

2016-08-01

Silicon-nanocrystals (Si-NCs) realized by SiO{sub x} {sub <} {sub 2}/SiO{sub 2} multilayer (ML) approach have shown promise for realizing tightly-controlled dimensions, thus efficiently exploiting the size-dependent quantum effects for device applications. Unfortunately, the confining insulating barriers (SiO{sub 2} sublayers), instrumental for realizing quantum size effects in Si-NC MLs, can also hinder the charge conduction which is crucial for device applications including Si-NC based tandem solar cells and multi-exciton solar cells. Owing to this, a comprehensive study of conduction mechanisms has been carried out using a thorough analysis of temperature-dependent dark I-V measurements of SiO{sub 2} thin film and Si-NC multilayer samples fabricated by Inductively Coupled Plasma CVD (ICPCVD). As the ML samples consisted of interleaved SiO{sub 2} sublayers, current in SiO{sub 2} thin film has initially been studied to understand the conduction properties of bulk ICPCVD SiO{sub 2}. For 21 nm thick SiO{sub 2} film, conduction is observed to be dominated by Fowler–Nordheim (FN) tunneling for higher electric fields (> 8 MV/cm; independent of temperature), while for lower electric fields (5–8 MV/cm) at higher temperatures, the trap-related Generalized Poole–Frenkel (GPF) is dominant. This signified the role of traps in modifying the conduction in bulk ICPCVD SiO{sub 2} films. We then present the conduction in ML samples. For multilayer samples with SiO{sub 2} sublayer thickness of 1.5 nm and 2.5 nm, Direct Tunneling (DT) is observed to be dominant, while for SiO{sub 2} sublayer thickness of 3.5 nm, Space Charge Limited Conduction (SCLC) with exponential trap distribution is found to be the dominant conduction mechanism. This signifies the role of traps in modifying the conduction in Si-NC multilayer samples and SiO{sub 2} sublayer thickness dependence. - Highlights: • Electrical conduction in SiO{sub 2} film & Si-nanocrystal layers (Si-NCs) is reported. • Si

Self organized formation of Ge nanocrystals in multilayers

OpenAIRE

Zschintzsch-Dias, Manuel

2012-01-01

The aim of this work is to create a process which allows the tailored growth of Ge nanocrystals for use in photovoltic applications. The multilayer systems used here provide a reliable method to control the Ge nanocrystal size after phase separation. In this thesis, the deposition of GeOx/SiO2 and Ge:SiOx~ 2/SiO2 multilayers via reactive dc magnetron sputtering and the self-ordered Ge nanocrystal formation within the GeOx and Ge:SiOx~ 2 sublayers during subsequent annealing is investigated...

Strong white and blue photoluminescence from silicon nanocrystals in SiNx grown by remote PECVD using SiCl4/NH3

International Nuclear Information System (INIS)

Benami, A; Santana, G; Ortiz, A; Ponce, A; Romeu, D; Aguilar-Hernandez, J; Contreras-Puente, G; Alonso, J C

2007-01-01

Strong white and blue photoluminescence (PL) from as-grown silicon nanocrystals (nc-Si) in SiN x films prepared by remote plasma enhanced chemical vapour deposition using SiCl 4 /NH 3 mixtures is reported. The colour and intensity of the PL could be controlled by adjusting the NH 3 flow rate. Samples with white emission were annealed at 1000 deg. C, obtaining a strong improvement of the PL intensity with a blue colour. The PL can be attributed to quantum confinement effect in nc-Si embedded in SiN x matrix, which is improved when a better passivation of nc-Si surface with chlorine and nitrogen atoms is obtained. The size, density and structure of the nc-Si in the as-grown and annealed films were confirmed and measured by high-resolution transmission electron microscopy

Probing the formation of silicon nano-crystals (Si-ncs) using variable energy positron annihilation spectroscopy

Science.gov (United States)

Knights, A. P.; Bradley, J. D. B.; Hulko, O.; Stevanovic, D. V.; Edwards, C. J.; Kallis, A.; Coleman, P. G.; Crowe, I. F.; Halsall, M. P.; Gwilliam, R. M.

2011-01-01

We describe preliminary results from studies of the formation of silicon nano-crystals (Si-ncs) embedded in stoichiometric, thermally grown SiO2 using Variable Energy Positron Annihilation Spectroscopy (VEPAS). We show that the VEPAS technique is able to monitor the introduction of structural damage. In SiO2 through the high dose Si+ ion implantation required to introduce excess silicon as a precursor to Si-nc formation. VEPAS is also able to characterize the rate of the removal of this damage with high temperature annealing, showing strong correlation with photoluminescence. Finally, VEPAS is shown to be able to selectively probe the interface between Si-ncs and the host oxide. Introduction of hydrogen at these interfaces suppresses the trapping of positrons at the interfaces.

Effect of rapid thermal annealing temperature on the dispersion of Si nanocrystals in SiO2 matrix

International Nuclear Information System (INIS)

Saxena, Nupur; Kumar, Pragati; Gupta, Vinay

2015-01-01

Effect of rapid thermal annealing temperature on the dispersion of silicon nanocrystals (Si-NC’s) embedded in SiO 2 matrix grown by atom beam sputtering (ABS) method is reported. The dispersion of Si NCs in SiO 2 is an important issue to fabricate high efficiency devices based on Si-NC’s. The transmission electron microscopy studies reveal that the precipitation of excess silicon is almost uniform and the particles grow in almost uniform size upto 850 °C. The size distribution of the particles broadens and becomes bimodal as the temperature is increased to 950 °C. This suggests that by controlling the annealing temperature, the dispersion of Si-NC’s can be controlled. The results are supported by selected area diffraction (SAED) studies and micro photoluminescence (PL) spectroscopy. The discussion of effect of particle size distribution on PL spectrum is presented based on tight binding approximation (TBA) method using Gaussian and log-normal distribution of particles. The study suggests that the dispersion and consequently emission energy varies as a function of particle size distribution and that can be controlled by annealing parameters

Spectral diffusion of quasi localized excitons in single silicon nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Martin, Joerg; Cichos, Frank [Centre for nanostructured Materials and Analytics, Institute of Physics, Chemnitz University of Technology, Reichenhainer Street 70, 09107 Chemnitz (Germany); Borczyskowski, Christian von, E-mail: Borczyskowski@physik.tu-chemnitz.de [Centre for nanostructured Materials and Analytics, Institute of Physics, Chemnitz University of Technology, Reichenhainer Street 70, 09107 Chemnitz (Germany)

2012-08-15

Evolution in time of photoluminescence spectra of SiO{sub x} capped single silicon nanocrystals has been investigated by means of confocal optical spectroscopy at room temperature. Large spectral jumps between subsequent spectra of up to 40 meV have been detected leading to noticeable line broadening and variation in the electron-phonon coupling. Further, a correlation between emission energy and emission intensity has been found and discussed in terms of an intrinsic Stark effect. Anti-correlated variations of the electron-phonon coupling to Si and SiO{sub 2} phonons as a function of photoluminescence energy indicate that the nearly localized excition is to some extent coupled to phonons in the shell covering the silicon nanocrystal. However, coupling is reduced upon increasing Stark effect, while at the same time coupling to phonons of the Si core increases. - Highlights: Black-Right-Pointing-Pointer Single silicon nanocrystals are detected via confocal microscopy. Black-Right-Pointing-Pointer Photoluminescence energies fluctuate strongly in time. Black-Right-Pointing-Pointer Spectral fluctuation is described in the form of spectral diffusion. Black-Right-Pointing-Pointer Dynamic processes are strongly controlled by electron-phonon coupling.

Controlled fabrication of Si nanocrystal delta-layers in thin SiO2 layers by plasma immersion ion implantation for nonvolatile memories

International Nuclear Information System (INIS)

Bonafos, C.; Ben-Assayag, G.; Groenen, J.; Carrada, M.; Spiegel, Y.; Torregrosa, F.; Normand, P.; Dimitrakis, P.; Kapetanakis, E.; Sahu, B. S.; Slaoui, A.

2013-01-01

Plasma Immersion Ion Implantation (PIII) is a promising alternative to beam line implantation to produce a single layer of nanocrystals (NCs) in the gate insulator of metal-oxide semiconductor devices. We report herein the fabrication of two-dimensional Si-NCs arrays in thin SiO 2 films using PIII and rapid thermal annealing. The effect of plasma and implantation conditions on the structural properties of the NC layers is examined by transmission electron microscopy. A fine tuning of the NCs characteristics is possible by optimizing the oxide thickness, implantation energy, and dose. Electrical characterization revealed that the PIII-produced-Si NC structures are appealing for nonvolatile memories

Influence of reductant and germanium concentration on the growth and stress development of germanium nanocrystals in silicon oxide matrix

International Nuclear Information System (INIS)

Chew, H G; Zheng, F; Choi, W K; Chim, W K; Foo, Y L; Fitzgerald, E A

2007-01-01

Germanium (Ge) nanocrystals have been synthesized by annealing co-sputtered SiO 2 -Ge samples in N 2 or forming gas (90% N 2 +10% H 2 ) at temperatures ranging from 700 to 1000 deg. C. We concluded that the annealing ambient, temperature and Ge concentration have a significant influence on the formation and evolution of the nanocrystals. We showed that a careful selective etching of the annealed samples in hydrofluoric acid solution enabled the embedded Ge nanocrystals to be liberated from the SiO 2 matrix. From the Raman results of the as-grown and the liberated nanocrystals, we established that the nanocrystals generally experienced compressive stress in the oxide matrix and the evolution of these stress states was intimately linked to the distribution, density, size and quality of the Ge nanocrystals

Formation and characterization of varied size germanium nanocrystals by electron microscopy, Raman spectroscopy, and photoluminescence

DEFF Research Database (Denmark)

Ou, Haiyan; Ou, Yiyu; Liu, Chuan

2011-01-01

Germanium nanocrystals are being extensively examined. Their unique optical properties (brought about by the quantum confinement effect) could potentially be applied in wide areas of nonlinear optics, light emission and solid state memory etc. In this paper, Ge nanocrystals embedded in a SiO2...... matrix were formed by complementary metal-oxide-semiconductor compatible technology, e.g. plasma enhanced chemical vapour deposition and annealing. Different sizes of the Ge nanocrystals were prepared and analyzed by transmission electron microscopy with respect to their size, distribution...... and crystallization. The samples of different size Ge nanocrystals embedded in the SiO2 matrix were characterized by Raman spectroscopy and photoluminescence. Interplayed size and strain effect of Ge nanocystals was demonstrated by Raman spectroscopy after excluding the thermal effect with proper excitation laser...

Optical and electrical properties of Si-nanocrystals ion beam synthesized in SiO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Garrido, B. E-mail: blas@el.ub.es; Lopez, M.; Perez-Rodriguez, A.; Garcia, C.; Pellegrino, P.; Ferre, R.; Moreno, J.A.; Morante, J.R.; Bonafos, C.; Carrada, M.; Claverie, A.; Torre, J. de la; Souifi, A

2004-02-01

We review in this paper our recent results on the correlation between the structural and the optoelectronic properties of Si nano crystals (Si-nc) embedded in SiO{sub 2}. We describe as well the development of both materials and technology approaches that have allowed us to successfully produce efficient and reliable LEDs by using only CMOS processes. Si-nc were synthesised in SiO{sub 2} by ion implantation plus annealing and display average diameters from 2.5 to 6 nm, as measured by electron microscopy. By varying the annealing time in a large scale we have been able to track the nucleation, pure growth and Ostwald ripening stages of the nanocrystal population. The most efficient structures have Si-ncs with average size of 3 nm and densities of about 10{sup 19} cm{sup -3}. We have estimated band-gap energies, lifetimes (20-200 {mu}s) and absorption cross-sections (10{sup -15}-10{sup -16} cm{sup 2}) as a function of size and surface passivation. Based on these results, we propose a mechanism for exciton recombination based on the strong coupling of excitons with the heterointerfaces. From highly luminescent Si-nc, LEDs consisting of MOS capacitors were fabricated. Stable red electroluminescence has been obtained at room temperature and the I-V characteristics prove that the current is related to a pure tunnelling process. Fowler-Nordheim injection is not observed during light emission for electric fields below 5 MV/cm. Thus, hot carrier injection is avoided and efficient and reliable devices are obtained.

Effect of rapid thermal annealing temperature on the dispersion of Si nanocrystals in SiO{sub 2} matrix

Energy Technology Data Exchange (ETDEWEB)

Saxena, Nupur, E-mail: n1saxena@gmail.com; Kumar, Pragati; Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India)

2015-05-15

Effect of rapid thermal annealing temperature on the dispersion of silicon nanocrystals (Si-NC’s) embedded in SiO{sub 2} matrix grown by atom beam sputtering (ABS) method is reported. The dispersion of Si NCs in SiO{sub 2} is an important issue to fabricate high efficiency devices based on Si-NC’s. The transmission electron microscopy studies reveal that the precipitation of excess silicon is almost uniform and the particles grow in almost uniform size upto 850 °C. The size distribution of the particles broadens and becomes bimodal as the temperature is increased to 950 °C. This suggests that by controlling the annealing temperature, the dispersion of Si-NC’s can be controlled. The results are supported by selected area diffraction (SAED) studies and micro photoluminescence (PL) spectroscopy. The discussion of effect of particle size distribution on PL spectrum is presented based on tight binding approximation (TBA) method using Gaussian and log-normal distribution of particles. The study suggests that the dispersion and consequently emission energy varies as a function of particle size distribution and that can be controlled by annealing parameters.

Synthesis and characterization of ion-implanted Pt nanocrystals in SiO2

International Nuclear Information System (INIS)

Giulian, R.; Kluth, P.; Johannessen, B.; Araujo, L.L.; Llewellyn, D.J.; Cookson, D.J.; Ridgway, M.C.

2007-01-01

Pt nanocrystals (NCs) produced by ion implantation in SiO 2 films were investigated by Rutherford backscattering spectroscopy (RBS), transmission electron microscopy (TEM) and small angle X-ray scattering (SAXS). The implantations were performed at liquid nitrogen temperature using energies between 3.4 and 5.6 MeV and an ion fluence range of 2-30 x 10 16 cm -2 and were followed by annealing in forming gas (95% N 2 , 5% H 2 ) for one hour at temperatures between 500 and 1100 deg. C. TEM analysis revealed that the NCs are spherical in shape. The mean size of the NCs annealed at 1100 deg. C varied between 2.8 and 3.6 nm for the highest and lowest fluences, respectively, as determined with both TEM and SAXS. In contrast to previous studies on ion implanted metal NCs, larger Pt NCs are located far beyond the Pt peak concentration, potentially the result of a strongly defect mediated NC nucleation

Identification of nasopharyngeal carcinoma from photoluminescence spectra of 3C-SiC nanocrystals

Science.gov (United States)

Wang, Li-Fen; Guo, Jun-Hong; Huang, Zhi-Chun; Gu, Jian-Sen; Feng, Li-Ren; Liu, Li-Zhe

2017-09-01

The identification of intracellular pH (pHi) during carcinogenesis progression plays a crucial role in the studies of biochemistry, cytology, and clinical medicine. In this work, 3C-SiC nanocrystals (NCs), which can effectively monitor the pH environment by using the linear relation between photoluminescence intensity and surface OH- and H+ concentration, are adapted as fluorescent probes for monitoring carcinogenesis progression of nasopharyngeal carcinoma. Our results demonstrated that 3C-SiC NCs are compatible with living cells and have low cytotoxicity. The pHi measurements in different carcinogenesis environments indicate the validity and sensitivity of this technology in identifying nasopharyngeal carcinoma in application.

Controlled fabrication of Si nanocrystal delta-layers in thin SiO{sub 2} layers by plasma immersion ion implantation for nonvolatile memories

Energy Technology Data Exchange (ETDEWEB)

Bonafos, C.; Ben-Assayag, G.; Groenen, J.; Carrada, M. [CEMES-CNRS and Université de Toulouse, 29 rue J. Marvig, 31055 Toulouse Cedex 04 (France); Spiegel, Y.; Torregrosa, F. [IBS, Rue G Imbert Prolongée, ZI Peynier-Rousset, 13790 Peynier (France); Normand, P.; Dimitrakis, P.; Kapetanakis, E. [NCSRD, Terma Patriarchou Gregoriou, 15310 Aghia Paraskevi (Greece); Sahu, B. S.; Slaoui, A. [ICube, 23 Rue du Loess, 67037 Strasbourg Cedex 2 (France)

2013-12-16

Plasma Immersion Ion Implantation (PIII) is a promising alternative to beam line implantation to produce a single layer of nanocrystals (NCs) in the gate insulator of metal-oxide semiconductor devices. We report herein the fabrication of two-dimensional Si-NCs arrays in thin SiO{sub 2} films using PIII and rapid thermal annealing. The effect of plasma and implantation conditions on the structural properties of the NC layers is examined by transmission electron microscopy. A fine tuning of the NCs characteristics is possible by optimizing the oxide thickness, implantation energy, and dose. Electrical characterization revealed that the PIII-produced-Si NC structures are appealing for nonvolatile memories.

Heterogeneous nucleation of amorphous alloys on catalytic nanoparticles to produce 2D patterned nanocrystal arrays

International Nuclear Information System (INIS)

Gangopadhyay, A K; Krishna, H; Favazza, C; Miller, C; Kalyanaraman, R

2007-01-01

Templates are widely used to produce artificial nanostructures. Here, laser-assisted self-organization has been used to form one- and two-dimensional (D) nanoarrays of Cu nanocrystals. Using these nanoarrays as a template, a 2D patterned ferromagnetic nanostructure of FeCrSi nanocrystals has been produced by heterogeneous nucleation and growth of nanocrystals by partial devitrification from an amorphous Fe 64.5 Cr 10 Si 13.5 B 9 Nb 3 alloy with the Cu nanoparticles acting as catalytic nucleation sites. The interaction among the ferromagnetic nanocrystals via the residual amorphous matrix can be controlled by suitable choice of the amorphous alloy composition. Although demonstrated for a ferromagnetic system, the processing method may have much wider applicability for producing artificial nanostructures of a wide variety of materials when materials-specific catalysts and amorphous alloy compositions are judiciously chosen

Nanoindentation Analysis of Elastic/Mechanical Behaviour of Surface of Transparent Glass Ceramics with Fresnoite Ba2TiSi2O8 Nanocrystals

International Nuclear Information System (INIS)

Shinozaki, K; Honma, T; Komatsu, T

2011-01-01

Transparent glass-ceramics containing Ba 2 TiSi 2 O 8 (BTS) nanocrystals with sizes of ∼200 nm were obtained by heat treatment of 40BaO-20TiO 2 -40SiO 2 glass. Their elastic/mechanical properties were evaluated using the cube-resonance method and the Berkovich nanoindentation technique under standard and 'continuous stiffness measurement' (CSM) modes, and the relation between these properties and the volume fraction (f) of BTS nanocrystals was clarified. The glass-ceramics were obtained by 1-h heat treatments at 760-790 deg. C of the precursor glass, resulting in the formation of BTS nanocrystals with f=2.7-54.5%, with a corresponding Young's modulus of 84-107 GPa. The CSM nanoindentation measurements gave an indentation modulus of 90 GPa for the glass and 110 GPa for the glass-ceramic heat-treated at 790 deg. C, for indentation depths of 200-1500 nm. The results suggest that the BTS nanocrystals confer a high resistance to deformation during indenter loading.

Memory characteristics and tunneling mechanism of Ag nanocrystal embedded HfAlOx films on Si83Ge17/Si substrate

International Nuclear Information System (INIS)

Qiu, X.Y.; Zhou, G.D.; Li, J.; Chen, Y.; Wang, X.H.; Dai, J.Y.

2014-01-01

A nano-floating gate memory capacitor consisting of a stack of 3 nm-thick HfAlO x tunneling layer, self-organized Ag nanocrystals (NCs), and a 6 nm-thick HfAlO x control layer, has been fabricated on compressively strained p-type Si 83 Ge 17 /Si(100) substrates by radio-frequency magnetron sputtering. The Ag-NCs with a size of 5–8 nm and a density of 5.7 × 10 12 /cm 2 are well dispersed in the amorphous HfAlO x matrix. Counterclockwise hysteresis capacitance–voltage curve with a memory window of ∼ 2 V, corresponding to a charge storage density of about 1.3 × 10 13 electrons/cm 2 , is observed in this memory capacitor. The accumulation capacitance of this memory capacitor has no obvious decrease during electrical stressing process within a period of 10 4 s, but the memory window gradually becomes narrower, and only 54% stored charges are retained in the Ag-NCs after 10 5 s stressing. Defect-enhanced Poole–Frenkel tunneling is found to be responsible for the degradation of memory properties. - Highlights: • Dispersed Ag nanocrystals act as memory nodes. • Realize a 2 V memory window • Illustrate the memory degradation process • Identify a defect-enhanced tunneling mechanism

Forming of nanocrystal silicon films by implantation of high dose of H+ in layers of silicon on isolator and following fast thermal annealing

International Nuclear Information System (INIS)

Tyschenko, I.E.; Popov, V.P.; Talochkin, A.B.; Gutakovskij, A.K.; Zhuravlev, K.S.

2004-01-01

Formation of nanocrystalline silicon films during rapid thermal annealing of the high-dose H + ion implanted silicon-on-insulator structures was studied. It was found, that Si nanocrystals had formed alter annealings at 300-400 deg C, their formation being strongly limited by the hydrogen content in silicon and also by the annealing time. It was supposed that the nucleation of crystalline phase occurred inside the silicon islands between micropores. It is conditioned by ordering Si-Si bonds as hydrogen atoms are leaving their sites in silicon network. No coalescence of micropores takes place during the rapid thermal annealing at the temperatures up to ∼ 900 deg C. Green-orange photoluminescence was observed on synthesized films at room temperature [ru

Heterogeneous nucleation of amorphous alloys on catalytic nanoparticles to produce 2D patterned nanocrystal arrays

Energy Technology Data Exchange (ETDEWEB)

Gangopadhyay, A K [Department of Physics, Washington University in St Louis, MO 63130 (United States); Krishna, H [Department of Physics, Washington University in St Louis, MO 63130 (United States); Favazza, C [Department of Physics, Washington University in St Louis, MO 63130 (United States); Miller, C [Center for Materials Innovation, Washington University in St Louis, MO 63130 (United States); Kalyanaraman, R [Department of Physics, Washington University in St Louis, MO 63130 (United States)

2007-12-05

Templates are widely used to produce artificial nanostructures. Here, laser-assisted self-organization has been used to form one- and two-dimensional (D) nanoarrays of Cu nanocrystals. Using these nanoarrays as a template, a 2D patterned ferromagnetic nanostructure of FeCrSi nanocrystals has been produced by heterogeneous nucleation and growth of nanocrystals by partial devitrification from an amorphous Fe{sub 64.5}Cr{sub 10}Si{sub 13.5}B{sub 9}Nb{sub 3} alloy with the Cu nanoparticles acting as catalytic nucleation sites. The interaction among the ferromagnetic nanocrystals via the residual amorphous matrix can be controlled by suitable choice of the amorphous alloy composition. Although demonstrated for a ferromagnetic system, the processing method may have much wider applicability for producing artificial nanostructures of a wide variety of materials when materials-specific catalysts and amorphous alloy compositions are judiciously chosen.

Vertically aligned Si nanocrystals embedded in amorphous Si matrix prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD)

Energy Technology Data Exchange (ETDEWEB)

Nogay, G. [Department of Physics, Middle East Technical University (METU), Ankara 06800 (Turkey); Center of Solar Energy Research and Application (GÜNAM), Middle East Technical University (METU), Ankara 06800 (Turkey); Saleh, Z.M., E-mail: zaki.saleh@aauj.edu [Center of Solar Energy Research and Application (GÜNAM), Middle East Technical University (METU), Ankara 06800 (Turkey); Department of Physics, Arab American University–Jenin (AAUJ), Jenin, Palestine (Country Unknown); Özkol, E. [Center of Solar Energy Research and Application (GÜNAM), Middle East Technical University (METU), Ankara 06800 (Turkey); Department of Chemical Engineering, Middle East Technical University (METU), Ankara 06800 (Turkey); Turan, R. [Department of Physics, Middle East Technical University (METU), Ankara 06800 (Turkey); Center of Solar Energy Research and Application (GÜNAM), Middle East Technical University (METU), Ankara 06800 (Turkey)

2015-06-15

Highlights: • Inductively-coupled plasma is used for nanostructured silicon at room temperature. • Low temperature deposition allows device processing on various substrates. • Deposition pressure is the most effective parameter in controlling nanostructure. • Films consist of quantum dots in a-Si matrix and exhibit columnar vertical growth. • Films are porous to oxygen infusion along columnar grain boundaries. - Abstract: Vertically-aligned nanostructured silicon films are deposited at room temperature on p-type silicon wafers and glass substrates by inductively-coupled, plasma-enhanced chemical vapor deposition (ICPCVD). The nanocrystalline phase is achieved by reducing pressure and increasing RF power. The crystalline volume fraction (X{sub c}) and the size of the nanocrystals increase with decreasing pressure at constant power. Columnar growth of nc-Si:H films is observed by high resolution transmission electron microscopy (HRTEM) and scanning electron microscopy (SEM). The films exhibit cauliflower-like structures with high porosity that leads to slow but uniform oxidation after exposure to air at room temperature. Films deposited at low pressures exhibit photoluminescence (PL) signals that may be deconvoluted into three distinct Gaussian components: 760–810, 920–935, and 990–1000 nm attributable to the quantum confinement and interface defect states. Hydrogen dilution is manifested in significant enhancement of the PL, but it has little effect on the nanocrystal size and X{sub c}.

Temporal correlation of blinking events in CdSe/ZnS and Si/SiO{sub 2} nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Bruhn, Benjamin, E-mail: b.bruhn@uva.nl [Materials and Nanophysics, KTH Royal Institute of Technology, 164 40 Kista (Sweden); Van der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, 1098 XH Amsterdam (Netherlands); Qejvanaj, Fatjon [Materials and Nanophysics, KTH Royal Institute of Technology, 164 40 Kista (Sweden); Gregorkiewicz, Tom [Van der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, 1098 XH Amsterdam (Netherlands); Linnros, Jan [Materials and Nanophysics, KTH Royal Institute of Technology, 164 40 Kista (Sweden)

2014-11-15

Well passivated single Si/SiO{sub 2} nanoparticles obey mono-exponential blinking statistics, whereas CdSe/ZnS quantum dots follow an apparent (truncated) power-law. Log-normal distributions are found to describe the interval length histograms at least as well as power-laws, while at the same time being more physically feasible and significantly easing the determination of the exponential cutoff in the ON-time distribution. The correlation of an ON- (OFF-)interval with its temporally displaced ON (OFF) neighbors, as well as that of intermixed intervals (ON with OFF and OFF with ON neighbors) has been studied. As expected from purely random processes, the correlation coefficients for events in silicon nanocrystals equal zero, whereas positive correlations between the pure and negative correlations between the mixed states in CdSe quantum dots hint at a switching process between two distinct blinking regimes that are slower than the blinking itself.

Photoluminescence of hydrophilic silicon nanocrystals in aqueous solutions

International Nuclear Information System (INIS)

Prtljaga, Nikola; D'Amato, Elvira; Pitanti, Alessandro; Guider, Romain; Froner, Elena; Larcheri, Silvia; Scarpa, Marina; Pavesi, Lorenzo

2011-01-01

Stable aqueous solutions of undecylenic-acid-grafted silicon nanocrystals (Si-nc) were prepared. The time evolution of the photoluminescence properties of these hydrophilic silicon nanocrystals has been followed on different timescales (hours and days). On a short timescale (hours), Si-nc tend to agglomerate while the PL lineshape and intensity are stable. Agglomeration can be reduced by using suitable surfactants. On a long timescale (days), oxidation of Si-nc occurs even in the presence of surfactants. These two observations render Si-nc very useful as a labeling agent for biosensing.

Photoluminescence of hydrophilic silicon nanocrystals in aqueous solutions

Science.gov (United States)

Prtljaga, Nikola; D'Amato, Elvira; Pitanti, Alessandro; Guider, Romain; Froner, Elena; Larcheri, Silvia; Scarpa, Marina; Pavesi, Lorenzo

2011-05-01

Stable aqueous solutions of undecylenic-acid-grafted silicon nanocrystals (Si-nc) were prepared. The time evolution of the photoluminescence properties of these hydrophilic silicon nanocrystals has been followed on different timescales (hours and days). On a short timescale (hours), Si-nc tend to agglomerate while the PL lineshape and intensity are stable. Agglomeration can be reduced by using suitable surfactants. On a long timescale (days), oxidation of Si-nc occurs even in the presence of surfactants. These two observations render Si-nc very useful as a labeling agent for biosensing.

Photoluminescence of hydrophilic silicon nanocrystals in aqueous solutions

Energy Technology Data Exchange (ETDEWEB)

Prtljaga, Nikola; D' Amato, Elvira; Pitanti, Alessandro; Guider, Romain; Froner, Elena; Larcheri, Silvia; Scarpa, Marina; Pavesi, Lorenzo, E-mail: nikolap@science.unitn.it [Department of Physics, University of Trento, Via Sommarive 14, I-38123 Trento (Italy)

2011-05-27

Stable aqueous solutions of undecylenic-acid-grafted silicon nanocrystals (Si-nc) were prepared. The time evolution of the photoluminescence properties of these hydrophilic silicon nanocrystals has been followed on different timescales (hours and days). On a short timescale (hours), Si-nc tend to agglomerate while the PL lineshape and intensity are stable. Agglomeration can be reduced by using suitable surfactants. On a long timescale (days), oxidation of Si-nc occurs even in the presence of surfactants. These two observations render Si-nc very useful as a labeling agent for biosensing.

Determination of optimum Si excess concentration in Er-doped Si-rich SiO2 for optical amplification at 1.54 μm

International Nuclear Information System (INIS)

Savchyn, Oleksandr; Coffey, Kevin R.; Kik, Pieter G.

2010-01-01

The presence of indirect Er 3+ excitation in Si-rich SiO 2 is demonstrated for Si-excess concentrations in the range of 2.5-37 at. %. The Si excess concentration providing the highest density of sensitized Er 3+ ions is demonstrated to be relatively insensitive to the presence of Si nanocrystals and is found to be ∼14.5 at. % for samples without Si nanocrystals (annealed at 600 deg. C) and ∼11.5 at. % for samples with Si nanocrystals (annealed at 1100 deg. C). The observed optimum is attributed to an increase in the density of Si-related sensitizers as the Si concentration is increased, with subsequent deactivation and removal of these sensitizers at high Si concentrations. The optimized Si excess concentration is predicted to generate maximum Er-related gain at 1.54 μm in devices based on Er-doped Si-rich SiO 2 .

Colloidal PbS nanocrystals integrated to Si-based photonics for applications at telecom wavelengths

Science.gov (United States)

Humer, M.; Guider, R.; Jantsch, W.; Fromherz, T.

2013-05-01

In the last decade, Si based photonics has made major advances in terms of design, fabrication, and device implementation. But due to Silicon's indirect bandgap, it still remains a challenge to create efficient Si-based light emitting devices. In order to overcome this problem, an approach is to develop hybrid systems integrating light-emitting materials into Si. A promising class of materials for this purpose is the class of semiconducting nanocrystal quantum dots (NCs) that are synthesized by colloidal chemistry. As their absorption and emission wavelength depends on the dot size, which can easily be controlled during synthesis, they are extremely attractive as building blocks for nanophotonic applications. For applications in telecom wavelength, Lead chalcogenide colloidal NCs are optimum materials due to their unique optical, electronic and nonlinear properties. In this work, we experimentally demonstrate the integration of PbS nanocrystals into Si-based photonic structures like slot waveguides and ring resonators as optically pumped emitters for room temperature applications. In order to create such hybrid structures, the NCs were dissolved into polymer resists and drop cast on top of the device. Upon optical pumping, intense photoluminescence emission from the resonating modes is recorded at the output of the waveguide with transmission quality factors up to 14000. The polymer host material was investigated with respect to its ability to stabilize the NC's photoluminescence emission against degradation under ambient conditions. The waveguide-ring coupling efficiency was also investigated as function of the NCs concentrations blended into the polymer matrix. The integration of colloidal quantum dots into Silicon photonic structures as demonstrated in this work is a very versatile technique and thus opens a large range of applications utilizing the linear and nonlinear optical properties of PbS NCs at telecom wavelengths.

Nanocrystal Growth in Thermally Treated Fe75Ni2Si8B13C2 Amorphous Alloy

Czech Academy of Sciences Publication Activity Database

Minić, Dragica M.; Blagojević, V.; Minić, Dušan M.; David, Bohumil; Pizúrová, Naděžda; Žák, Tomáš

43A, č. 9 (2012), s. 3062-3069 ISSN 1073-5623 R&D Projects: GA MŠk 1M0512 Institutional support: RVO:68081723 Keywords : Nanocrystal growth * Fe75Ni2Si8B13C2 * Amorphous alloy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.627, year: 2012

Luminescent nanocrystals in the rare-earth niobate–zirconia system formed via hydrothermal method

International Nuclear Information System (INIS)

Hirano, Masanori; Dozono, Hayato

2013-01-01

Luminescent nanocrystals based on the rare-earth niobates (Ln 3 NbO 7 , Ln=Y, Eu) and zirconia (ZrO 2 ) that were composed of 50 mol% Ln 3 NbO 7 and 50 mol% ZrO 2 , were hydrothermally formed as cubic phase under weakly basic conditions at 240 °C. The lattice parameter of the as-prepared nanoparticles corresponding to the composition of Y 3−x Eu x NbO 7 –4ZrO 2 that was estimated as a single phase of cubic gradually increased as the content of europium x increased. The existence of small absorbance peaks at 395 and 466 nm corresponding to the Eu 3+7 F 0 → 5 L 6 , and 7 F 0 → 5 D 2 excitation transition, respectively, was clearly observed in the diffuse reflectance spectra of the as-prepared samples containing europium. The optical band gap of the as-prepared samples was in the range from 3.5 to 3.7 eV. The photoluminescence spectra of the as-prepared nanocrystals containing europium showed orange and red luminescences with main peaks at 590 and 610 nm, corresponding to 5 D 0 → 7 F 1 and 5 D 0 → 7 F 2 transitions of Eu 3+ , respectively, under excitation at 395 nm Xe lamp. The emission intensity corresponding to 5 D 0 → 7 F 2 transition increased as heat-treatment temperature rose from 800 to 1200 °C. - Graphical abstract: This graphical abstract shows the excitation and emission spectra and a transmission electron microscopy image of nanocrystals (with composition based on the rare-earth niobates (Ln 3 NbO 7 , Ln=Y, Eu) and zirconia (ZrO 2 ) that were composed of 50 mol% Ln 3 NbO 7 and 50 mol% ZrO 2 ) formed via hydrothermal route. Display Omitted - Highlights: • Nanocrystals composed of 50 mol% Y 3−x Eu x NbO 7 and 50 mol% ZrO 2 was directly formed. • The nanocrystals were hydrothermally formed under weakly basic conditions at 240 °C. • The Y 3 NbO 7 showed an UV-blue and broad-band emission under excitation at 240 nm. • The emission is originated from the niobate octahedral group [NbO 6 ] 7− . • The nanocrystals showed orange and

Effects of substrate temperature on structural and electrical properties of SiO2-matrix boron-doped silicon nanocrystal thin films

International Nuclear Information System (INIS)

Huang, Junjun; Zeng, Yuheng; Tan, Ruiqin; Wang, Weiyan; Yang, Ye; Dai, Ning; Song, Weijie

2013-01-01

In this work, silicon-rich SiO 2 (SRSO) thin films were deposited at different substrate temperatures (T s ) and then annealed by rapid thermal annealing to form SiO 2 -matrix boron-doped silicon-nanocrystals (Si-NCs). The effects of T s on the micro-structure and electrical properties of the SiO 2 -matrix boron-doped Si-NC thin films were investigated using Raman spectroscopy and Hall measurements. Results showed that the crystalline fraction and dark conductivity of the SiO 2 -matrix boron-doped Si-NC thin films both increased significantly when the T s was increased from room temperature to 373 K. When the T s was further increased from 373 K to 676 K, the crystalline fraction of 1373 K-annealed thin films decreased from 52.2% to 38.1%, and the dark conductivity reduced from 8 × 10 −3 S/cm to 5.5 × 10 −5 S/cm. The changes in micro-structure and dark conductivity of the SiO 2 -matrix boron-doped Si-NC thin films were most possibly due to the different amount of Si-O 4 bond in the as-deposited SRSO thin films. Our work indicated that there was an optimal T s , which could significantly increase the crystallization and conductivity of Si-NC thin films. Also, it was illumined that the low-resistivity SiO 2 -matrix boron-doped Si-NC thin films can be achieved under the optimal substrate temperatures, T s .

Structure/Processing Relationships of Highly Ordered Lead Salt Nanocrystal Superlattices

KAUST Repository

Hanrath, Tobias; Choi, Joshua J.; Smilgies, Detlef-M.

2009-01-01

We investigated the influence of processing conditions, nanocrystal/substrate interactions and solvent evaporation rate on the ordering of strongly interacting nanocrystals by synergistically combining electron microscopy and synchrotron-based small-angle X-ray scattering analysis. Spin-cast PbSe nanocrystal films exhibited submicrometer-sized supracrystals with face-centered cubic symmetry and (001)s planes aligned parallel to the substrate. The ordering of drop-cast lead salt nanocrystal films was sensitive to the nature of the substrate and solvent evaporation dynamics. Nanocrystal films drop-cast on rough indium tin oxide substrates were polycrystalline with small grain size and low degree of orientation with respect to the substrate, whereas films drop-cast on flat Si substrates formed highly ordered face-centered cubic supracrystals with close-packed (111)s planes parallel to the substrate. The spatial coherence of nanocrystal films drop-cast in the presence of saturated solvent vapor was significantly improved compared to films drop-cast in a dry environment. Solvent vapor annealing was demonstrated as a postdeposition technique to modify the ordering of nanocrystals in the thin film. Octane vapor significantly improved the long-range order and degree of orientation of initially disordered or polycrystalline nanocrystal assemblies. Exposure to 1,2-ethanedithiol vapor caused partial displacement of surface bound oleic acid ligands and drastically degraded the degree of order in the nanocrystal assembly. © 2009 American Chemical Society.

Structure/Processing Relationships of Highly Ordered Lead Salt Nanocrystal Superlattices

KAUST Repository

Hanrath, Tobias

2009-10-27

We investigated the influence of processing conditions, nanocrystal/substrate interactions and solvent evaporation rate on the ordering of strongly interacting nanocrystals by synergistically combining electron microscopy and synchrotron-based small-angle X-ray scattering analysis. Spin-cast PbSe nanocrystal films exhibited submicrometer-sized supracrystals with face-centered cubic symmetry and (001)s planes aligned parallel to the substrate. The ordering of drop-cast lead salt nanocrystal films was sensitive to the nature of the substrate and solvent evaporation dynamics. Nanocrystal films drop-cast on rough indium tin oxide substrates were polycrystalline with small grain size and low degree of orientation with respect to the substrate, whereas films drop-cast on flat Si substrates formed highly ordered face-centered cubic supracrystals with close-packed (111)s planes parallel to the substrate. The spatial coherence of nanocrystal films drop-cast in the presence of saturated solvent vapor was significantly improved compared to films drop-cast in a dry environment. Solvent vapor annealing was demonstrated as a postdeposition technique to modify the ordering of nanocrystals in the thin film. Octane vapor significantly improved the long-range order and degree of orientation of initially disordered or polycrystalline nanocrystal assemblies. Exposure to 1,2-ethanedithiol vapor caused partial displacement of surface bound oleic acid ligands and drastically degraded the degree of order in the nanocrystal assembly. © 2009 American Chemical Society.

Synthesis and green up-conversion fluorescence of colloidal La0.78Yb0.20Er0.02F3/SiO2 core/shell nanocrystals

International Nuclear Information System (INIS)

Wang Yan; Qin Weiping; Zhang Jisen; Cao Chunyan; Zhang Jishuang; Jin Ye; Zhu Peifen; Wei Guodong; Wang Guofeng; Wang Lili

2007-01-01

Water-soluble PVP-stabilized hexagonal-phase La 0.78 Yb 0.20 Er 0.02 F 3 nanocrystals (NCs) were synthesized by hydrothermal method. The NCs were coated with a very thin silica shell, and amino groups were introduced to the surface of silica shells by copolymerization of 3-aminopropyl(triethoxy)silane. The core/shell NCs can be dispersed in ethanol and water to form stable colloidal solution. The transmission electron microscopy (TEM), selected area electron diffraction (SAED), powder X-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FT-IR) were used to characterize the core/shell materials. In addition, the green up-conversion fluorescence mechanism of La 0.78 Yb 0.20 Er 0.02 F 3 /SiO 2 NCs was studied with a 980-nm diode laser as excitation source. The water solubility, small core/shell particles size, and well colloidal stability mean the green up-conversion fluorescence NCs have potential applications in bioassay. - Graphical abstract: Colloidal La 0.78 Yb 0.20 Er 0.02 F 3 /SiO 2 Core/Shell nanocrystals (NCs) were synthesized and the free amino groups were introduced to the surface of silica shells by copolymerization 3-aminopropyl(triethoxy)silane. The NCs can be dispersed in ethanol and water to form stable colloidal solution. In addition, the NCs exhibit green up-conversion fluorescence under 980-nm excitation

Annealing temperature effect on structure and electrical properties of films formed of Ge nanoparticles in SiO2

International Nuclear Information System (INIS)

Stavarache, Ionel; Lepadatu, Ana-Maria; Stoica, Toma; Ciurea, Magdalena Lidia

2013-01-01

Ge–SiO 2 films with high Ge/Si atomic ratio of about 1.86 were obtained by co-sputtering of Ge and SiO 2 targets and subsequently annealed at different temperatures between 600 and 1000 °C in a conventional furnace in order to show how the annealing process influences the film morphology concerning the Ge nanocrystal and/or amorphous nanoparticle formation and to study their electrical behaviour. Atomic force microscopy (AFM) imaging, Raman spectroscopy and electrical conductance measurements were performed in order to find out the annealing effect on the film surface morphology, as well as the Ge nanoparticle formation in correlation with the hopping conductivity of the films. AFM images show that the films annealed at 600 and 700 °C present a granular surface with particle height of about 15 nm, while those annealed at higher temperatures have smoother surface. The Raman investigations evidence Ge nanocrystals (including small ones) coexisting with amorphous Ge in the films annealed at 600 °C and show that almost all Ge is crystallized in the films annealed at 700 °C. The annealing at 800 °C disadvantages the Ge nanocrystal formation due to the strong Ge diffusion. This transition in Ge nanocrystals formation process by annealing temperature increase from 700 to 800 °C revealed by AFM and Raman spectroscopy measurements corresponds to a change in the electrical transport mechanism. Thus, in the 700 °C annealed films, the current depends on temperature according to a T −1/2 law which is typical for a tunnelling mechanism between neighbour Ge nanocrystals. In the 800 °C annealed films, the current–temperature characteristic has a T −1/4 dependence showing a hopping mechanism within an electronic band of localized states related to diffused Ge in SiO 2 .

Growth Mechanism and Surface Structure of Ge Nanocrystals Prepared by Thermal Annealing of Cosputtered GeSiO Ternary Precursor

Directory of Open Access Journals (Sweden)

Bo Zhang

2014-01-01

Full Text Available Ge nanocrystals (Ge-ncs embedded in a SiO2 superlattice structure were prepared by magnetron cosputtering and postdeposition annealing. The formation of spherical nanocrystals was confirmed by transmission electron microscopy and their growth process was studied by a combination of spectroscopic techniques. The crystallinity volume fraction of Ge component was found to increase with crystallite size, but its overall low values indicated a coexistence of crystalline and noncrystalline phases. A reduction of Ge-O species was observed in the superlattice during thermal annealing, accompanied by a transition from oxygen-deficient silicon oxide to silicon dioxide. A growth mechanism involving phase separation of Ge suboxides (GeOx was then proposed to explain these findings and supplement the existing growth models for Ge-ncs in SiO2 films. Further analysis of the bonding structure of Ge atoms suggested that Ge-ncs are likely to have a core-shell structure with an amorphous-like surface layer, which is composed of GeSiO ternary complex. The surface layer thickness was extracted to be a few angstroms and equivalent to several atomic layer thicknesses.

Diffusion limited Cu and Au nanocrystal formation in thin film SiO2

International Nuclear Information System (INIS)

Johannessen, B.; Kluth, P.; Glover, C.J.; Foran, G.J.; Ridgway, M.C.

2006-01-01

Elemental Cu and Au nanocrystals (NCs) were produced by high-energy ion-implantations into amorphous silica (SiO 2 ) and subsequent thermal annealing. By a combination of X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM) we confirm both NC species to have the bulk face-centered cubic phase and estimate their average diameter. We concentrate on the investigation of the concentration and size-dependent coordination number (China) of these matrix embedded NCs utilising extended X-ray absorption fine structure (EXAFS) spectroscopy. The CN is found to be suppressed compared to that of a bulk standard. The CN in Au NCs is found to be lower than that of Cu NCs in agreement with smaller average Au NC sizes. We explain this difference by the difference in diffusivity for the two atomic species in SiO 2

Optical luminescence from alkyl-passivated Si nanocrystals under vacuum ultraviolet excitation: Origin and temperature dependence of the blue and orange emissions

OpenAIRE

Chao, Y; Houlton, A; Horrocks, BR; Hunt, MRC; Poolton, NRJ; Yang, J; Šiller, L

2006-01-01

The origin and stability of luminescence are critical issues for Si nanocrystals which are intended for use as biological probes. The optical luminescence of alkyl-monolayer-passivated silicon nanocrystals was studied under excitation with vacuum ultraviolet photons (5.1–23 eV). Blue and orange emission bands were observed simultaneously, but the blue band only appeared at low temperatures (8.7 eV). At 8 K, the peak wavelengths of the emission bands were 430±2 nm (blue) and 600±2 nm (orange)....

Doped and codoped silicon nanocrystals: The role of surfaces and interfaces

Science.gov (United States)

Marri, Ivan; Degoli, Elena; Ossicini, Stefano

2017-12-01

Si nanocrystals have been extensively studied because of their novel properties and their potential applications in electronic, optoelectronic, photovoltaic, thermoelectric and biological devices. These new properties are achieved through the combination of the quantum confinement of carriers and the strong influence of surface chemistry. As in the case of bulk Si the tuning of the electronic, optical and transport properties is related to the possibility of doping, in a controlled way, the nanocrystals. This is a big challenge since several studies have revealed that doping in Si nanocrystals differs from the one of the bulk. Theory and experiments have underlined that doping and codoping are influenced by a large number of parameters such as size, shape, passivation and chemical environment of the silicon nanocrystals. However, the connection between these parameters and dopant localization as well as the occurrence of self-purification effects are still not clear. In this review we summarize the latest progress in this fascinating research field considering free-standing and matrix-embedded Si nanocrystals both from the theoretical and experimental point of view, with special attention given to the results obtained by ab-initio calculations and to size-, surface- and interface-induced effects.

Correlation between SnO{sub 2} nanocrystals and optical properties of Eu{sup 3+} ions in SiO{sub 2} matrix: Relation of crystallinity, composition, and photoluminescence

Energy Technology Data Exchange (ETDEWEB)

Thanh, Bui Quang [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST), No.1 Dai Co Viet, Hanoi (Viet Nam); Ha, Ngo Ngoc, E-mail: hann@itims.edu.vn [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST), No.1 Dai Co Viet, Hanoi (Viet Nam); Khiem, Tran Ngoc, E-mail: khiem@itims.edu.vn [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST), No.1 Dai Co Viet, Hanoi (Viet Nam); Chien, Nguyen Duc [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST), No.1 Dai Co Viet, Hanoi (Viet Nam); School of Engineering Physics (SEP), Hanoi University of Science and Technology (HUST), No.1 Dai Co Viet, Hanoi (Viet Nam)

2015-07-15

We report characteristics and optical properties of Eu{sup 3+}-doped SnO{sub 2} nanocrystals dispersed in SiO{sub 2} matrix. Samples are prepared by the sol–gel method. Crystallinity of SnO{sub 2} nanocrystals is examined by X-ray diffraction experiments. At annealing temperatures from 900 to 1200 °C, we observe the formation of single tetragonal rutile structure of SnO{sub 2} nanocrystals. Average sizes of SnO{sub 2} nanocrystals within 3–7 nm are estimated by Debye–Scherrer equation. Intense photoluminescent spectra of Eu{sup 3+} ions consist of a series of resolved emission bands within 570–645 nm, which are varied with different sample-preparation conditions. We show the efficient excitation process of Eu{sup 3+} ions through SnO{sub 2} nanocrystals in the materials. Microscopic structure of SnO{sub 2} nanoparticles and optical properties of Eu{sup 3+} ions are also presented and discussed. - Highlights: • Thin layers of Eu{sup 3+} doped SnO{sub 2} nanocrystals dispersed in SiO{sub 2} were prepared by sol-gel method and spin-coating process. • Formation of single-phase tetragonal rutile structure of SnO{sub 2} nanocrystals and highly efficient optical excitation of the Eu{sup 3+} dopants were exhibited. • Relations of the crystallinity and composition of SnO{sub 2} and optical properties of Eu{sup 3+} dopants were comprehensively investigated and presented. • Allocations of major optically-active Eu{sup 3+} ions in the materials were deduced from their emission bands.

Memory characteristics of an MOS capacitor structure with double-layer semiconductor and metal heterogeneous nanocrystals

International Nuclear Information System (INIS)

Ni Henan; Wu Liangcai; Song Zhitang; Hui Chun

2009-01-01

An MOS (metal oxide semiconductor) capacitor structure with double-layer heterogeneous nanocrystals consisting of semiconductor and metal embedded in a gate oxide for nonvolatile memory applications has been fabricated and characterized. By combining vacuum electron-beam co-evaporated Si nanocrystals and self-assembled Ni nanocrystals in a SiO 2 matrix, an MOS capacitor with double-layer heterogeneous nanocrystals can have larger charge storage capacity and improved retention characteristics compared to one with single-layer nanocrystals. The upper metal nanocrystals as an additional charge trap layer enable the direct tunneling mechanism to enhance the flat voltage shift and prolong the retention time. (semiconductor devices)

Formation of silicon nanocrystals in multilayer nanoperiodic a-SiO{sub x}/insulator structures from the results of synchrotron investigations

Energy Technology Data Exchange (ETDEWEB)

Turishchev, S. Yu., E-mail: tsu@phys.vsu.ru; Terekhov, V. A.; Koyuda, D. A. [Voronezh State University (Russian Federation); Ershov, A. V.; Mashin, A. I. [Lobachevsky State University of Nizhny Novgorod (Russian Federation); Parinova, E. V.; Nesterov, D. N. [Voronezh State University (Russian Federation); Grachev, D. A.; Karabanova, I. A. [Lobachevsky State University of Nizhny Novgorod (Russian Federation); Domashevskaya, E. P. [Voronezh State University (Russian Federation)

2017-03-15

The problem of the efficiency of the controllable formation of arrays of silicon nanoparticles is studied on the basis of detailed investigations of the electronic structure of multilayer nanoperiodic a-SiO{sub x}/SiO{sub 2}, a-SiO{sub x}/Al{sub 2}O{sub 3}, and a-SiO{sub x}/ZrO{sub 2} compounds. Using synchrotron radiation and the X-ray absorption near edge structure (XANES) spectroscopy technique, a modification is revealed for the investigated structures under the effect of high-temperature annealing at the highest temperature of 1100°C; this modification is attributed to the formation of silicon nanocrystals in the layers of photoluminescent multilayer structures.

Synthesis and Doping of Silicon Nanocrystals for Versatile Nanocrystal Inks

Science.gov (United States)

Kramer, Nicolaas Johannes

The impact of nanotechnology on our society is getting larger every year. Electronics are becoming smaller and more powerful, the "Internet of Things" is all around us, and data generation is increasing exponentially. None of this would have been possible without the developments in nanotechnology. Crystalline semiconductor nanoparticles (nanocrystals) are one of the latest developments in the field of nanotechnology. This thesis addresses three important challenges for the transition of silicon nanocrystals from the lab bench to the marketplace: A better understanding of the nanocrystal synthesis was obtained, the electronic properties of the nanocrystals were characterized and tuned, and novel silicon nanocrystal inks were formed and applied using simple coating technologies. Plasma synthesis of nanocrystals has numerous advantages over traditional solution-based synthesis methods. While the formation of nanoparticles in low pressure nonthermal plasmas is well known, the heating mechanism leading to their crystallization is poorly understood. A combination of comprehensive plasma characterization with a nanoparticle heating model presented here reveals the underlying plasma physics leading to crystallization. The model predicts that the nanoparticles reach temperatures as high as 900 K in the plasma as a result of heating reactions on the nanoparticle surface. These temperatures are well above the gas temperature and sufficient for complete nanoparticle crystallization. Moving the field of plasma nanoparticle synthesis to atmospheric pressures is important for lowering its cost and making the process attractive for industrial applications. The heating and charging model for silicon nanoparticles was adapted in Chapter 3 to study plasmas maintained over a wide range of pressures (10 -- 105 Pa). The model considers three collisionality regimes and determines the dominant contribution of each regime under various plasma conditions. Strong nanoparticle cooling at

Enhanced photovoltaic performance of ultrathin Si solar cells via semiconductor nanocrystal sensitization: energy transfer vs. optical coupling effects.

Science.gov (United States)

Hoang, Son; Ashraf, Ahsan; Eisaman, Matthew D; Nykypanchuk, Dmytro; Nam, Chang-Yong

2016-03-21

Excitonic energy transfer (ET) offers exciting opportunities for advances in optoelectronic devices such as solar cells. While recent experimental attempts have demonstrated its potential in both organic and inorganic photovoltaics (PVs), what remains to be addressed is quantitative understanding of how different ET modes contribute to PV performance and how ET contribution is differentiated from the classical optical coupling (OC) effects. In this study, we implement an ET scheme using a PV device platform, comprising CdSe/ZnS nanocrystal energy donor and 500 nm-thick ultrathin Si acceptor layers, and present the quantitative mechanistic description of how different ET modes, distinguished from the OC effects, increase the light absorption and PV efficiency. We find that nanocrystal sensitization enhances the short circuit current of ultrathin Si solar cells by up to 35%, of which the efficient ET, primarily driven by a long-range radiative mode, contributes to 38% of the total current enhancement. These results not only confirm the positive impact of ET but also provide a guideline for rationally combining the ET and OC effects for improved light harvesting in PV and other optoelectronic devices.

Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO2 for non-volatile memory device

International Nuclear Information System (INIS)

Stepina, N.P.; Dvurechenskii, A.V.; Armbrister, V.A.; Kirienko, V.V.; Novikov, P.L.; Kesler, V.G.; Gutakovskii, A.K.; Smagina, Z.V.; Spesivtzev, E.V.

2008-01-01

A floating gate memory structure, utilizing Ge nanocrystals (NCs) deposited on tunnel SiO 2 , have been fabricated using pulsed low energy ion-beam induced molecular-beam deposition (MBD) in ultra-high vacuum. The ion-beam action is shown to stimulate the nucleation of Ge NCs when being applied after thin Ge layer deposition. Growth conditions for independent change of NCs size and array density were established allowing to optimize the structure parameters required for memory device. Activation energy E = 0.25 eV was determined from the temperature dependence of NCs array density. Monte Carlo simulation has shown that the process, determining NCs array density, is the surface diffusion. Embedding of the crystalline Ge dots into silicon oxide was carried out by selective oxidation of Si(100)/SiO 2 /Ge(NCs)/poly-Si structure. MOS-capacitor obtained after oxidation showed a hysteresis in its C-V curves attributed to charge retention in the Ge dots

Photoemission studies of semiconductor nanocrystals

International Nuclear Information System (INIS)

Hamad, K.S.; Roth, R.; Alivisatos, A.P.

1997-01-01

Semiconductor nanocrystals have been the focus of much attention in the last ten years due predominantly to their size dependent optical properties. Namely, the band gap of nanocrystals exhibits a shift to higher energy with decreasing size due to quantum confinement effects. Research in this field has employed primarily optical techniques to study nanocrystals, and in this respect this system has been investigated extensively. In addition, one is able to synthesize monodisperse, crystalline particles of CdS, CdSe, Si, InP, InAs, as well as CdS/HgS/CdS and CdSe/CdS composites. However, optical spectroscopies have proven ambiguous in determining the degree to which electronic excitations are interior or surface admixtures or giving a complete picture of the density of states. Photoemission is a useful technique for understanding the electronic structure of nanocrystals and the effects of quantum confinement, chemical environments of the nanocrystals, and surface coverages. Of particular interest to the authors is the surface composition and structure of these particles, for they have found that much of the behavior of nanocrystals is governed by their surface. Previously, the authors had performed x-ray photoelectron spectroscopy (XPS) on CdSe nanocrystals. XPS has proven to be a powerful tool in that it allows one to determine the composition of the nanocrystal surface

Preparation of NiFe binary alloy nanocrystals for nonvolatile memory applications

Institute of Scientific and Technical Information of China (English)

无

2010-01-01

In this work,an idea which applies binary alloy nanocrystal floating gate to nonvolatile memory application was introduced.The relationship between binary alloy’s work function and its composition was discussed theoretically.A nanocrystal floating gate structure with NiFe nanocrystals embedded in SiO2 dielectric layers was fabricated by magnetron sputtering.The micro-structure and composition deviation of the prepared NiFe nanocrystals were also investigated by TEM and EDS.

Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

International Nuclear Information System (INIS)

Pi, X.D.; Coleman, P.G.; Harding, R.; Davies, G.; Gwilliam, R.M.; Sealy, B.J.

2003-01-01

Positron annihilation spectroscopy has been employed to study changes in the interface region between nanocrystalline Si and SiO 2 , following annealing between 400 deg. C and 900 deg. C in nitrogen or oxygen. With the support of photoluminescence spectroscopy we find that nitrogen and oxygen are trapped in voids at the interface at low temperatures. At temperatures above 700 deg. C both nitrogen and oxygen react with Si nanocrystals, and the resulting volume increase introduces stress in the SiO 2 matrix which is relaxed by the shrinkage of its intrinsic open volume. Oxygen appears to enhance Si diffusion in SiO 2 so that the agglomeration of Si nanocrystals occurs more readily during annealing in oxygen than in nitrogen

Formation, structure, and phonon confinement effect of nanocrystalline Si1-xGex in SiO2-Si-Ge cosputtered films

International Nuclear Information System (INIS)

Yang, Y.M.; Wu, X.L.; Siu, G.G.; Huang, G.S.; Shen, J.C.; Hu, D.S.

2004-01-01

Using magnetron cosputtering of SiO 2 , Ge, and Si targets, Si-based SiO 2 :Ge:Si films were fabricated for exploring the influence of Si target proportion (P Si ) and annealing temperature (Ta) on formation, local structure, and phonon properties of nanocrystalline Si 1-x Ge x (nc-Si 1-x Ge x ). At low P Si and Ta higher than 800 deg. C, no nc-Si 1-x Ge x but a kind of composite nanocrystal consisting of a Ge core, GeSi shell, and amorphous Si outer shell is formed in the SiO 2 matrix. At moderate P Si , nc-Si 1-x Ge x begins to be formed at Ta=800 deg. C and coexists with nc-Ge at Ta=1100 deg. C. At high P Si , it was disclosed that both optical phonon frequency and lattice spacing of nc-Si 1-x Ge x increase with raising Ta. The possible origin of this phenomenon is discussed by considering three factors, the phonon confinement, strain effect, and composition variation of nc-Si 1-x Ge x . This work will be helpful in understanding the growth process of ternary GeSiO films and beneficial to further investigations on optical properties of nc-Ge 1-x Si x in the ternary matrix

Effect of the stoichiometry of Si-rich silicon nitride thin films on their photoluminescence and structural properties

Energy Technology Data Exchange (ETDEWEB)

Torchynska, T.V., E-mail: ttorch@esfm.ipn.mx [ESFM—Instituto Politecnico Nacional, Mexico DF 07738 (Mexico); Casas Espinola, J.L. [ESFM—Instituto Politecnico Nacional, Mexico DF 07738 (Mexico); Vergara Hernandez, E. [UPIITA—Instituto Politecnico Nacional, Mexico DF 07320 (Mexico); Khomenkova, L., E-mail: khomen@ukr.net [V. Lashkaryov Institute of Semiconductor Physics, 45 Pr. Nauky, 03028 Kyiv (Ukraine); Delachat, F.; Slaoui, A. [ICube, 23 rue du Loess, BP 20 CR, 67037 Strasbourg Cedex 2 (France)

2015-04-30

Si-rich Silicon nitride films were grown on silicon substrates by plasma enhanced chemical vapor deposition. The film stoichiometry was controlled via the variation of NH{sub 3}/SiH{sub 4} ratio from 0.45 up to 1.0. Thermal annealing at 1100 °C for 30 min in the nitrogen flow was applied to form the Si nanocrystals in the films that have been investigated by means of photoluminescence and Raman scattering methods, as well as transmission electron microscopy. Several emission bands have been detected with the peak positions at: 2.8–3.0 eV, 2.5–2.7 eV, 2.10–2.25 eV, and 1.75–1.98 eV. The temperature dependences of photoluminescence spectra were studied with the aim to confirm the types of optical transitions and the nature of light emitting defects in silicon nitride. The former three bands were assigned to the defects in silicon nitride, whereas the last one (1.75–1.98 eV) was attributed to the exciton recombination inside of Si nanocrystals. The photoluminescence mechanism is discussed. - Highlights: • Substoichiometric silicon nitride films were grown by PECVD technique. • The variation of the NH{sub 3}/SiH{sub 4} ratio controls excess Si content in the films. • Both Si nanocrystals and amorphous Si phase were observed in annealed films. • Temperature evolution of carrier recombination via Si nanocrystals and host defects.

Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO{sub 2} for non-volatile memory device

Energy Technology Data Exchange (ETDEWEB)

Stepina, N.P. [Institute of Semiconductor Physics, Lavrenteva 13, 630090 Novosibirsk (Russian Federation)], E-mail: nstepina@mail.ru; Dvurechenskii, A.V.; Armbrister, V.A.; Kirienko, V.V.; Novikov, P.L.; Kesler, V.G.; Gutakovskii, A.K.; Smagina, Z.V.; Spesivtzev, E.V. [Institute of Semiconductor Physics, Lavrenteva 13, 630090 Novosibirsk (Russian Federation)

2008-11-03

A floating gate memory structure, utilizing Ge nanocrystals (NCs) deposited on tunnel SiO{sub 2}, have been fabricated using pulsed low energy ion-beam induced molecular-beam deposition (MBD) in ultra-high vacuum. The ion-beam action is shown to stimulate the nucleation of Ge NCs when being applied after thin Ge layer deposition. Growth conditions for independent change of NCs size and array density were established allowing to optimize the structure parameters required for memory device. Activation energy E = 0.25 eV was determined from the temperature dependence of NCs array density. Monte Carlo simulation has shown that the process, determining NCs array density, is the surface diffusion. Embedding of the crystalline Ge dots into silicon oxide was carried out by selective oxidation of Si(100)/SiO{sub 2} /Ge(NCs)/poly-Si structure. MOS-capacitor obtained after oxidation showed a hysteresis in its C-V curves attributed to charge retention in the Ge dots.

Inorganic Nanocrystals Functionalized Mesoporous Silica Nanoparticles: Fabrication and Enhanced Bio-applications

Directory of Open Access Journals (Sweden)

Tiancong Zhao

2017-12-01

Full Text Available Mesoporous SiO2 nanoparticles (MSNs are one of the most promising materials for bio-related applications due to advantages such as good biocompatibility, tunable mesopores, and large pore volume. However, unlike the inorganic nanocrystals with abundant physical properties, MSNs alone lack functional features. Thus, they are not sufficiently suitable for bio-applications that require special functions. Consequently, MSNs are often functionalized by incorporating inorganic nanocrystals, which provide a wide range of intriguing properties. This review focuses on inorganic nanocrystals functionalized MSNs, both their fabrication and bio-applications. Some of the most utilized methods for coating mesoporous silica (mSiO2 on nanoparticles were summarized. Magnetic, fluorescence and photothermal inorganic nanocrystals functionalized MSNs were taken as examples to demonstrate the bio-applications. Furthermore, asymmetry of MSNs and their effects on functions were also highlighted.

Modification of cellulose nanocrystal via SI-ATRP of styrene and the mechanism of its reinforcement of polymethylmethacrylate.

Science.gov (United States)

Yin, Y; Tian, X; Jiang, X; Wang, H; Gao, W

2016-05-20

Cellulose nanocrystal (CNC) is a promising strengthener but is used limitedly since its poor compatibility with organic materials. The graft polymerization of styrene via surface-initiated atom transfer radical polymerization (SI-ATRP) of cellulose nanocrystal is adopted to modify its thermo-stability and compatibility. The modified crystals have been dosed into polymethylmethacrylate (PMMA) nanocomposites by the solution casting. The polymeric layer on the surface of CNCs should improve the thermal stability of CNCs, and provide significant dispersibility and compatibilization for the nanocomposites. Thermogravimetry analysis proved that the initial degrade temperature of CNC was increased 50 °C with the modification. The scanning electronic microscope showed that the modified CNCs homogeneously dispersed in PMMA matrix. Breaking strength and elongation at break of the composites were improved, which was attributed to the reinforcement of CNCs modified with styrene. Transmittance of nanocomposite films measurement showed that the transmittance of PMMA/1%CNC was almost close to that of pure PMMA. Copyright © 2016 Elsevier Ltd. All rights reserved.

Tailoring of SiC nanoprecipitates formed in Si

Energy Technology Data Exchange (ETDEWEB)

Velisa, G., E-mail: gihan.velisa@cea.fr [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Horia Hulubei National Institute for Physics and Nuclear Engineering, P.O. Box MG-6, 077125 Magurele (Romania); Trocellier, P. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Thomé, L. [Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR8609, Bât. 108, 91405 Orsay (France); Vaubaillon, S. [CEA, INSTN, UEPTN, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Miro, S.; Serruys, Y.; Bordas, É. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Meslin, E. [CEA, DEN, Service de Recherches de Métallurgie Physique, F-91191 Gif-sur-Yvette (France); Mylonas, S. [Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR8609, Bât. 108, 91405 Orsay (France); Coulon, P.E. [Ecole Polytechnique, Laboratoire des Solides Irradiés, CEA/DSM/IRAMIS-CNRS, 91128 Palaiseau Cedex (France); Leprêtre, F.; Pilz, A.; Beck, L. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France)

2013-07-15

The SiC synthesis through single-beam of C{sup +}, and simultaneous-dual-beam of C{sup +} and Si{sup +} ion implantations into a Si substrate heated at 550 °C has been studied by means of three complementary analytical techniques: nuclear reaction analysis (NRA), Raman, and transmission electron microscopy (TEM). It is shown that a broad distribution of SiC nanoprecipitates is directly formed after simultaneous-dual-beam (520-keV C{sup +} and 890-keV Si{sup +}) and single-beam (520-keV C{sup +}) ion implantations. Their shape appear as spherical (average size ∼4–5 nm) and they are in epitaxial relationship with the silicon matrix.

Size limit on the phosphorous doped silicon nanocrystals for dopant activation

Energy Technology Data Exchange (ETDEWEB)

Yang, P., E-mail: pengyuan.yang@surrey.ac.uk [Surrey Ion Beam Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 5XH (United Kingdom); Gwilliam, R.M. [Surrey Ion Beam Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 5XH (United Kingdom); Crowe, I.F.; Papachristodoulou, N.; Halsall, M.P. [Photon Science Institute, School of Electrical and Electronic Engineering, Alan Turing Building, University of Manchester, Manchester M13 9PL (United Kingdom); Hylton, N.P. [Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ (United Kingdom); Hulko, O.; Knights, A.P. [Department of Engineering Physics and the Centre for Emerging Device Technologies, McMaster University, 1280 Main Street West, Hamilton L8S 4L7, Ontario (Canada); Shah, M.; Kenyon, A.J. [Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE (United Kingdom)

2013-07-15

We studied the photoluminescence spectra of silicon nanocrystals doped with and without phosphorus as a function of isothermal annealing time. Silicon nanocrystals were prepared by the implantation of 80 keV Si{sup +} into a 500 nm SiO{sub 2} film to an areal density of 8 × 10{sup 16} at/cm{sup 2}. Half of the samples were co-implanted with P{sup +} at 80 keV to 5 × 10{sup 15} at/cm{sup 2}. The photoluminescence of the annealed samples were photo-excited at wavelength of 405 nm. For short anneal times, when the nanocrystal size distribution has a relatively small mean diameter, formation in the presence of phosphorus yields an increase in the luminescence intensity and a blue shift in the emission peak compared with intrinsic nanocrystals. As the mean size increases with annealing time, this enhancement rapidly diminishes and the peak energy shifts to the red. Our results indicate the donor electron generation depends strongly on the nanocrystal size. We also found a critical limit above which it allows dopant activation.

Liquid phase epitaxy of binary III–V nanocrystals in thin Si layers triggered by ion implantation and flash lamp annealing

Energy Technology Data Exchange (ETDEWEB)

Wutzler, Rene, E-mail: r.wutzler@hzdr.de; Rebohle, Lars; Prucnal, Slawomir; Bregolin, Felipe L.; Hübner, Rene; Voelskow, Matthias; Helm, Manfred; Skorupa, Wolfgang [Helmholtz-Zentrum Dresden - Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden (Germany)

2015-05-07

The integration of III–V compound semiconductors in Si is a crucial step towards faster and smaller devices in future technologies. In this work, we investigate the formation process of III–V compound semiconductor nanocrystals, namely, GaAs, GaSb, and InP, by ion implantation and sub-second flash lamp annealing in a SiO{sub 2}/Si/SiO{sub 2} layer stack on Si grown by plasma-enhanced chemical vapor deposition. Raman spectroscopy, Rutherford Backscattering spectrometry, and transmission electron microscopy were performed to identify the structural and optical properties of these structures. Raman spectra of the nanocomposites show typical phonon modes of the compound semiconductors. The formation process of the III–V compounds is found to be based on liquid phase epitaxy, and the model is extended to the case of an amorphous matrix without an epitaxial template from a Si substrate. It is shown that the particular segregation and diffusion coefficients of the implanted group-III and group-V ions in molten Si significantly determine the final appearance of the nanostructure and thus their suitability for potential applications.

Nanocrystal in Er3+-doped SiO2-ZrO2 Planar Waveguide with Yb3+ Sensitizer

International Nuclear Information System (INIS)

Razaki, N. Iznie; Jais, U. Sarah; Abd-Rahman, M. Kamil; Bhaktha, S. N. B.; Chiasera, A.; Ferrari, M.

2010-01-01

Higher doping of Er 3+ in glass ceramic waveguides would cause concentration and pair-induced quenching which lead to inhomogeneous line-width of luminescence spectrum thus reduce output intensity. Concentration quenching can be overcome by introducing ZrO 2 in the glass matrix while co-doping with Yb 3+ which acts as sensitizer would improve the excitation efficiency of Er 3+ . In this study, SiO 2 -ZrO 2 planar waveguides having composition in mol percent of 70SiO 2 -30ZrO 2 doped with Er 3+ and co-doped with Yb 3+ , were prepared via sol-gel route. Narrower and shaper peaks of PL and XRD shows the formation of nanocrystals. Intensity is increase with addition amount of Yb 3+ shows sensitizing effect on Er 3+ .

Glass-ceramic optical fiber containing Ba2TiSi2O8 nanocrystals for frequency conversion of lasers.

Science.gov (United States)

Fang, Zaijin; Xiao, Xusheng; Wang, Xin; Ma, Zhijun; Lewis, Elfed; Farrell, Gerald; Wang, Pengfei; Ren, Jing; Guo, Haitao; Qiu, Jianrong

2017-03-30

A glass-ceramic optical fiber containing Ba 2 TiSi 2 O 8 nanocrystals fabricated using a novel combination of the melt-in-tube method and successive heat treatment is reported for the first time. For the melt-in-tube method, fibers act as a precursor at the drawing temperature for which the cladding glass is softened while the core glass is melted. It is demonstrated experimentally that following heat treatment, Ba 2 TiSi 2 O 8 nanocrystals with diameters below 10 nm are evenly distributed throughout the fiber core. Comparing to the conventional rod-in-tube method, the melt-in-tube method is superior in terms of controllability of crystallization to allow for the fabrication of low loss glass-ceramic fibers. When irradiated using a 1030 nm femtosecond laser, an enhanced green emission at a wavelength of 515 nm is observed in the glass-ceramic fiber, which demonstrates second harmonic generation of a laser action in the fabricated glass-ceramic fibers. Therefore, this new glass-ceramic fiber not only provides a highly promising development for frequency conversion of lasers in all optical fiber based networks, but the melt-in-tube fabrication method also offers excellent opportunities for fabricating a wide range of novel glass-ceramic optical fibers for multiple future applications including fiber telecommunications and lasers.

Scanning tunneling spectroscopy of CdSe nanocrystals covalently bound to GaAs

DEFF Research Database (Denmark)

Walzer, K.; Marx, E.; Greenham, N.C.

2003-01-01

We present scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) measurements of CdSe nanocrystals covalently attached to doped GaAs substrates using monolayers of 1,6-hexanedithiol. STM measurements showed the formation of stable, densely packed, homogeneous monolayers...... of nanocrystals. STS measurements showed rectifying behaviour, with high currents at the opposite sample bias to that previously observed for CdSe nanocrystals adsorbed on Si substrates. We explain the rectifying behaviour by considering the interaction between the electronic states of the nanocrystals...

Temperature-Dependent Physical and Memory Characteristics of Atomic-Layer-Deposited RuOx Metal Nanocrystal Capacitors

Directory of Open Access Journals (Sweden)

S. Maikap

2011-01-01

Full Text Available Physical and memory characteristics of the atomic-layer-deposited RuOx metal nanocrystal capacitors in an n-Si/SiO2/HfO2/RuOx/Al2O3/Pt structure with different postdeposition annealing temperatures from 850–1000°C have been investigated. The RuOx metal nanocrystals with an average diameter of 7 nm and a highdensity of 0.7 × 1012/cm2 are observed by high-resolution transmission electron microscopy after a postdeposition annealing temperature at 1000°C. The density of RuOx nanocrystal is decreased (slightly by increasing the annealing temperatures, due to agglomeration of multiple nanocrystals. The RuO3 nanocrystals and Hf-silicate layer at the SiO2/HfO2 interface are confirmed by X-ray photoelectron spectroscopy. For post-deposition annealing temperature of 1000°C, the memory capacitors with a small equivalent oxide thickness of ~9 nm possess a large hysteresis memory window of >5 V at a small sweeping gate voltage of ±5 V. A promising memory window under a small sweeping gate voltage of ~3 V is also observed due to charge trapping in the RuOx metal nanocrystals. The program/erase mechanism is modified Fowler-Nordheim (F-N tunneling of the electrons and holes from Si substrate. The electrons and holes are trapped in the RuOx nanocrystals. Excellent program/erase endurance of 106 cycles and a large memory window of 4.3 V with a small charge loss of ~23% at 85°C are observed after 10 years of data retention time, due to the deep-level traps in the RuOx nanocrystals. The memory structure is very promising for future nanoscale nonvolatile memory applications.

Ab initio study on the effect of structural relaxation on the electronic and optical properties of P-doped Si nanocrystals

International Nuclear Information System (INIS)

Pi, Xiaodong; Ni, Zhenyi; Yang, Deren; Delerue, Christophe

2014-01-01

In contrast to the conventional doping of bulk silicon (Si), the doping of Si nanocrystals (NCs) that are often smaller than 5 nm in diameter may lead to serious structural changes. Since the electronic and optical properties of Si NCs are intimately associated with their structures, it is critical to understand how doping impacts the structures of Si NCs. By means of ab initio calculation we now compare 1.4 nm phosphorus (P)-doped Si NCs without structural relaxation and those with structural relaxation. Structural changes induced by structural relaxation are manifested by the stretching and compressing of bonds and apparent variations in bond angles. With the increase of the concentration of P structural changes induced by structural relaxation become more serious. It is found that structural relaxation makes differences in the energy-level schemes of P-doped Si NCs. Structural relaxation also causes the binding energy of an electron in a P-doped Si NC to more significantly increase as the concentration of P increases. With the increase of the concentration of P structural relaxation leads to more pronounced changes in the optical absorption of P-doped Si NCs

Lateral electrical transport, optical properties and photocurrent measurements in two-dimensional arrays of silicon nanocrystals embedded in SiO2

Directory of Open Access Journals (Sweden)

Gardelis Spiros

2011-01-01

Full Text Available Abstract In this study we investigate the electronic transport, the optical properties, and photocurrent in two-dimensional arrays of silicon nanocrystals (Si NCs embedded in silicon dioxide, grown on quartz and having sizes in the range between less than 2 and 20 nm. Electronic transport is determined by the collective effect of Coulomb blockade gaps in the Si NCs. Absorption spectra show the well-known upshift of the energy bandgap with decreasing NC size. Photocurrent follows the absorption spectra confirming that it is composed of photo-generated carriers within the Si NCs. In films containing Si NCs with sizes less than 2 nm, strong quantum confinement and exciton localization are observed, resulting in light emission and absence of photocurrent. Our results show that Si NCs are useful building blocks of photovoltaic devices for use as better absorbers than bulk Si in the visible and ultraviolet spectral range. However, when strong quantum confinement effects come into play, carrier transport is significantly reduced due to strong exciton localization and Coulomb blockade effects, thus leading to limited photocurrent.

Passivation effects in B doped self-assembled Si nanocrystals

International Nuclear Information System (INIS)

Puthen Veettil, B.; Wu, Lingfeng; Jia, Xuguang; Lin, Ziyun; Zhang, Tian; Yang, Terry; Johnson, Craig; Conibeer, Gavin; Perez-Würfl, Ivan; McCamey, Dane

2014-01-01

Doping of semiconductor nanocrystals has enabled their widespread technological application in optoelectronics and micro/nano-electronics. In this work, boron-doped self-assembled silicon nanocrystal samples have been grown and characterised using Electron Spin Resonance and photoluminescence spectroscopy. The passivation effects of boron on the interface dangling bonds have been investigated. Addition of boron dopants is found to compensate the active dangling bonds at the interface, and this is confirmed by an increase in photoluminescence intensity. Further addition of dopants is found to reduce the photoluminescence intensity by decreasing the minority carrier lifetime as a result of the increased number of non-radiative processes

Temperature-dependent photoluminescence from CdS/Si nanoheterojunctions

Energy Technology Data Exchange (ETDEWEB)

Song, Yue Li; Li, Yong; Ji, Peng Fei; Zhou, Feng Qun; Sun, Xiao Jun; Yuan, Shu Qing; Wan, Ming Li [Pingdingshan University, Department of Physics, Solar New Energy Research Center, Pingdingshan (China); Ling, Hong [North China University of Water Resources and Electric Power, Department of Mathematics and Information Science, Zhengzhou (China)

2016-12-15

CdS/Si nanoheterojunctions have been fabricated by growing nanocrystal CdS (nc-CdS) on the silicon nanoporous pillar array (Si-NPA) through using a chemical bath deposition method. The nanoheterojunctions have been constructed by three layers: the upper layer being a nc-CdS thin films, the intermediate layer being the interface region including nc-CdS and nanocrystal silicon (nc-Si), and the bottom layer being nc-Si layer grown on sc-Si substrate. The room temperature and temperature-dependent photoluminescence (PL) have been measured and analyzed to provide some useful information of defect states. Utilizing the Gauss-Newton fitting method, five emission peaks from the temperature-dependent PL spectra can be determined. From the high energy to low energy, these five peaks are ascribed to the some luminescence centers which are formed by the oxygen-related deficiency centers in the silicon oxide layer of Si-NPA, the band gap emission of nc-CdS, the transition from the interstitial cadmium (I{sub Cd}) to the valence band, the recombination from I{sub Cd} to cadmium vacancies (V{sub Cd}), and from sulfur vacancies (V{sub s}) to the valence band, respectively. Understanding of the defect states in the CdS/Si nanoheterojunctions is very meaningful for the performance of devices based on CdS/Si nanoheterojunctions. (orig.)

Nanocrystals Technology for Pharmaceutical Science.

Science.gov (United States)

Cheng, Zhongyao; Lian, Yumei; Kamal, Zul; Ma, Xin; Chen, Jianjun; Zhou, Xinbo; Su, Jing; Qiu, Mingfeng

2018-05-17

Nanocrystals technology is a promising method for improving the dissolution rate and enhancing the bioavailability of poorly soluble drugs. In recent years, it has been developing rapidly and applied to drug research and engineering. Nanocrystal drugs can be formulated into various dosage forms. This review mainly focused on the nanocrystals technology and its application in pharmaceutical science. Firstly, different preparation methods of nanocrystal technology and the characterization of nanocrystal drugs are briefly described. Secondly, the application of nanocrystals technology in pharmaceutical science is mainly discussed followed by the introduction of sustained release formulations. Then, the scaling up process, marketed nanocrystal drug products and regulatory aspects about nanodrugs are summarized. Finally, the specific challenges and opportunities of nanocrystals technology for pharmaceutical science are summarized and discussed. This review will provide a comprehensive guide for scientists and engineers in the field of pharmaceutical science and biochemical engineering. Copyright© Bentham Science Publishers; For any queries, please email at epub@benthamscience.org.

Formation of nanocrystals embedded in a silicon nitride film at a low temperature ({<=}200 deg. C)

Energy Technology Data Exchange (ETDEWEB)

Lee, Kyoung-Min; Kim, Tae-Hwan [Department of Nano Science and Technology, University of Seoul, Seoul 130-743 (Korea, Republic of); Hong, Wan-Shick [Department of Nano Science and Technology, University of Seoul, Seoul 130-743 (Korea, Republic of)], E-mail: wshong@uos.ac.kr

2008-12-15

Silicon-rich silicon nitride films with embedded silicon nanocrystals (Si NCs) were fabricated successfully on plastic substrates at a low temperature by catalytic chemical vapor deposition. A mixture of SiH{sub 4}, NH{sub 3} and H{sub 2} was used as a source gas. Formation of the silicon nanocrystals was analyzed by photoluminescence spectra and was confirmed by transmission electron microscopy. The formation of Si NCs required an H{sub 2}/SiH{sub 4} mixture ratio that was higher than four.

Nanocrystal/sol-gel nanocomposites

Science.gov (United States)

Petruska, Melissa A [Los Alamos, NM; Klimov, Victor L [Los Alamos, NM

2007-06-05

The present invention is directed to solid composites including colloidal nanocrystals within a sol-gel host or matrix and to processes of forming such solid composites. The present invention is further directed to alcohol soluble colloidal nanocrystals useful in formation of sol-gel based solid composites.

Spectroscopic investigations of dark Si nanocrystals in SiO2 and their role in external quantum efficiency quenching"

NARCIS (Netherlands)

Limpens, R.; Gregorkiewicz, T.

2013-01-01

The percentage of dark silicon nanocrystals, i.e., the nanocrystals that are not able to radiatively recombine after absorption of a photon, is investigated by combining measurements of external and internal quantum efficiencies. The study is conducted on samples prepared by co-sputtering and

Shrinking of silicon nanocrystals embedded in an amorphous silicon oxide matrix during rapid thermal annealing in a forming gas atmosphere

Science.gov (United States)

van Sebille, M.; Fusi, A.; Xie, L.; Ali, H.; van Swaaij, R. A. C. M. M.; Leifer, K.; Zeman, M.

2016-09-01

We report the effect of hydrogen on the crystallization process of silicon nanocrystals embedded in a silicon oxide matrix. We show that hydrogen gas during annealing leads to a lower sub-band gap absorption, indicating passivation of defects created during annealing. Samples annealed in pure nitrogen show expected trends according to crystallization theory. Samples annealed in forming gas, however, deviate from this trend. Their crystallinity decreases for increased annealing time. Furthermore, we observe a decrease in the mean nanocrystal size and the size distribution broadens, indicating that hydrogen causes a size reduction of the silicon nanocrystals.

A radiation-tolerant, low-power non-volatile memory based on silicon nanocrystal quantum dots

OpenAIRE

Bell, L. D.; Boer, E.; Ostraat, M.; Brongersma, M. L.; Flagan, R. C.; Atwater, H. A.; De Blauwe, J.; Green, M. L.

2001-01-01

Nanocrystal nonvolatile floating-gate memories are a good candidate for space applications - initial results suggest they are fast, more reliable and consume less power than conventional floating gate memories. In the nanocrystal based NVM device, charge is not stored on a continuous polysilicon layer (so-called floating gate), but instead on a layer of discrete nanocrystals. Charge injection and storage in dense arrays of silicon nanocrystals in SiO_2 is a critical aspect of the performance ...

Self-aggregation of magnetic semiconductor EuS nanocrystals

International Nuclear Information System (INIS)

Tanaka, Atsushi; Hasegawa, Yasuchika; Kamikubo, Hironari; Kataoka, Mikio; Kawai, Tsuyoshi

2009-01-01

Controlled formation of aggregates having organized structure of cube-shaped EuS nanocrystals is reported. The EuS aggregates in liquid media (methanol) were obtained by means of van der Waals interaction between EuS nanocrystals. The packing structure of the EuS aggregates is characterized with transmission electron microscopy (TEM) and small angle X-ray scattering measurements (SAXS). TEM image indicates the EuS nanocrystals form self-aggregated 2D orthogonal lattice structure. The diffraction peak of (111) of SAXS profile shows that the cube-shaped EuS form 3D cubic superlattice. We successfully demonstrated that the aggregates of cube-shaped EuS nanocrystals formed cubic stacking structure.

Controlled growth of periodically aligned copper-silicide nanocrystal arrays on silicon directed by laser-induced periodic surface structures (LIPSS)

Science.gov (United States)

Nürnberger, Philipp; Reinhardt, Hendrik M.; Rhinow, Daniel; Riedel, René; Werner, Simon; Hampp, Norbert A.

2017-10-01

In this paper we introduce a versatile tool for the controlled growth and alignment of copper-silicide nanocrystals. The method takes advantage of a unique self-organization phenomenon denoted as laser-induced periodic surface structures (LIPSS). Copper films (3 ± 0.2 nm) are sputter-deposited onto single crystal silicon (100) substrates with a thin oxide layer (4 ± 0.2 nm), and subsequently exposed to linearly polarized nanosecond laser pulses (τ ≈ 6 ns) at a central wavelength of 532 nm. The irradiation triggers dewetting of the Cu film and simultaneous formation of periodic Cu nanowires (LIPSS), which partially penetrate the oxide layer to the Si substrate. These LIPSS act as nucleation centers for the growth of Cu-Si crystals during thermal processing at 500 °C under forming gas 95/5 atmosphere. Exemplified by our model system Cu/SiO2/Si, LIPSS are demonstrated to facilitate the diffusion reaction between Cu and underlying Si. Moreover, adjustment of the laser polarization allows us to precisely control the nanocrystal alignment with respect to the LIPSS orientation. Potential applications and conceivable alternatives of this process are discussed.

Ti–Al–O nanocrystal charge trapping memory cells fabricated by atomic layer deposition

International Nuclear Information System (INIS)

Cao, Zheng-Yi; Li, Ai-Dong; Li, Xin; Cao, Yan-Qiang; Wu, Di

2014-01-01

Charge trapping memory cells using Ti–Al–O (TAO) film as charge trapping layer and amorphous Al 2 O 3 as the tunneling and blocking layers were fabricated on Si substrates by atomic layer deposition method. As-deposited TAO films were annealed at 700 °C, 800 °C and 900 °C for 3 min in N 2 with a rapid thermal annealing process to form nanocrystals. High-resolution transmission electron microscopy and X-ray photoelectron spectroscopy were used to characterize the microstructure and band diagram of the heterostructures. The electrical characteristics and charge storage properties of the Al 2 O 3 /TAO/Al 2 O 3 /Si stack structures were also evaluated. Compared to 700 °C and 900 °C samples, the memory cells annealed at 800 °C exhibit better memory performance with larger memory window of 4.8 V at ± 6 V sweeping, higher program/erase speed and excellent endurance. - Highlights: • The charge trapping memory cells were fabricated by atomic layer deposition method. • The anneal temperature plays a key role in forming nanocrystals. • The memory cells annealed at 800 °C exhibit better memory performance. • The band alignment is beneficial to enhance the retention characteristics

Some fundamental and applicative properties of [polymer/nano-SiC] hybrid nanocomposites

International Nuclear Information System (INIS)

Kassiba, A; Boucle, J; Makowska-Janusik, M; Errien, N

2007-01-01

Hybrid nanocomposites which combine polymer as host matrix and nanocrystals as active elements are promising functional materials for electronics, optics or photonics. In these systems, the physical response is governed by the nanocrystal features (size, surface and defect states), the polymer properties and the polymer-nanocrystal interface. This work reviews some selective nanostructured architectures based on active elements such as silicon carbide (SiC) nanocrystals and polymer host matrices. Beyond an overview of some key properties of the nanocrystals, a main part will be devoted to the electro-optical (EO) properties of SiC based hybrid systems where SiC nanocrystals are embedded in polymer matrices of different chemical nature such as poly-(methylmethacrylate) (PMMA), poly-vinylcarbazole (PVK) or polycarbonate. Using this approach, the organic-inorganic interface effects are emphasised with regard to the dielectric or hole transporting behaviour of PMMA and PVK respectively. These effects are illustrated through different EO responses associated with hybrid composites based on PMMA or PVK

Some fundamental and applicative properties of [polymer/nano-SiC] hybrid nanocomposites

Science.gov (United States)

Kassiba, A.; Bouclé, J.; Makowska-Janusik, M.; Errien, N.

2007-08-01

Hybrid nanocomposites which combine polymer as host matrix and nanocrystals as active elements are promising functional materials for electronics, optics or photonics. In these systems, the physical response is governed by the nanocrystal features (size, surface and defect states), the polymer properties and the polymer-nanocrystal interface. This work reviews some selective nanostructured architectures based on active elements such as silicon carbide (SiC) nanocrystals and polymer host matrices. Beyond an overview of some key properties of the nanocrystals, a main part will be devoted to the electro-optical (EO) properties of SiC based hybrid systems where SiC nanocrystals are embedded in polymer matrices of different chemical nature such as poly-(methylmethacrylate) (PMMA), poly-vinylcarbazole (PVK) or polycarbonate. Using this approach, the organic-inorganic interface effects are emphasised with regard to the dielectric or hole transporting behaviour of PMMA and PVK respectively. These effects are illustrated through different EO responses associated with hybrid composites based on PMMA or PVK.

Method of synthesizing pyrite nanocrystals

Science.gov (United States)

Wadia, Cyrus; Wu, Yue

2013-04-23

A method of synthesizing pyrite nanocrystals is disclosed which in one embodiment includes forming a solution of iron (III) diethyl dithiophosphate and tetra-alkyl-ammonium halide in water. The solution is heated under pressure. Pyrite nanocrystal particles are then recovered from the solution.

Thermal evolution of the morphology, structure, and optical properties of multilayer nanoperiodic systems produced by the vacuum evaporation of SiO and SiO2

International Nuclear Information System (INIS)

Ershov, A. V.; Chugrov, I. A.; Tetelbaum, D. I.; Mashin, A. I.; Pavlov, D. A.; Nezhdanov, A. V.; Bobrov, A. I.; Grachev, D. A.

2013-01-01

The alternate vacuum evaporation of SiO and SiO 2 from separate sources is used to produce amorphous a-SiO x /SiO 2 multilayer nanoperiodic structures with periods of 5–10 nm and a number of layers of up to 64. The effect of annealing at temperatures T a = 500–1100°C on the structural and optical properties of the nanostructures is studied. The results of transmission electron microscopy of the samples annealed at 1100°C indicate the annealing-induced formation of vertically ordered quasiperiodic arrays of Si nanocrystals, whose dimensions are comparable to the a-SiO x -layer thickness in the initial nanostructures. The nanostructures annealed at 1100°C exhibit size-dependent photoluminescence in the wavelength range 750–830 nm corresponding to Si nanocrystals. The data on infrared absorption and Raman scattering show that the thermal evolution of structural and phase state of the SiO x layers with increasing annealing temperature proceeds through the formation of amorphous Si nanoinclusions with the subsequent formation and growth of Si nanocrystals.

Growth of ZnO nanocrystals in silica by rf co-sputter deposition and post-annealing

International Nuclear Information System (INIS)

Siva Kumar, V.V.; Singh, F.; Kumar, Amit; Avasthi, D.K.

2006-01-01

Thin films with ZnO nanocrystals in silica were synthesized by rf reactive magnetron co-sputter deposition and post-annealing. The films were deposited from a ZnO/Si composite target in an rf oxygen plasma. The deposited films were annealed in air/vacuum at high temperatures to grow ZnO nanocrystals. The deposited and annealed films were characterized by X-ray diffraction (XRD), fourier transform infrared spectroscopy (FT-IR), uv-vis spectroscopy (UV-VIS) and photoluminescence (PL) measurements. FT-IR results of the films show the vibrational features of Si-O-Si and Zn-O bonds. UV-VIS spectra of the deposited film shows the band edge of ZnO. The XRD results of the films annealed at 750 deg. C and 1000 deg. C indicate the growth of ZnO nanocrystals with average crystallite sizes between 7 nm and 26 nm. PL measurements of the deposited film show a broad visible luminescence peak which can be due to ZnO. These results suggest the growth of ZnO nanocrystals in silica matrix

Micromagnetic study of single-domain FePt nanocrystals overcoated with silica

International Nuclear Information System (INIS)

Hyun, Changbae; Lee, Doh C; Korgel, Brian A; Lozanne, Alex de

2007-01-01

Chemically-synthesized FePt nanocrystals must be annealed at a high temperature (>550 deg. C) to induce the hard ferromagnetic L 1 0 phase. Unfortunately, the organic stabilizer covering these nanocrystals degrades at these temperatures and the nanocrystals sinter, resulting in the loss of control over nanocrystal size and separation in the film. We have developed a silica overcoating strategy to prevent nanocrystal sintering. In this study, 6 nm diameter FePt nanocrystals were coated with 17 nm thick shells of silica using an inverse micelle process. Magnetization measurements of the annealed FePt-SiO 2 nanocrystals indicate ferromagnetism with a high coercivity at room temperature. Magnetic force microscopy (MFM) results show that the film composed of nanocrystals behaves as a dipole after magnetization by an 8 T external field. The individual nanocrystals are modelled as single-domain particles with random crystallographic orientations. We propose that the interparticle magnetic dipole interaction is weaker than the magnetocrystalline energy in the remanent state, leading to an unusual material with no magnetic anisotropy and no domains. Films of these nanoparticles are promising candidates for magnetic media with a data storage density of ∼Tb/in 2

Composite material including nanocrystals and methods of making

Science.gov (United States)

Bawendi, Moungi G.; Sundar, Vikram C.

2010-04-06

Temperature-sensing compositions can include an inorganic material, such as a semiconductor nanocrystal. The nanocrystal can be a dependable and accurate indicator of temperature. The intensity of emission of the nanocrystal varies with temperature and can be highly sensitive to surface temperature. The nanocrystals can be processed with a binder to form a matrix, which can be varied by altering the chemical nature of the surface of the nanocrystal. A nanocrystal with a compatibilizing outer layer can be incorporated into a coating formulation and retain its temperature sensitive emissive properties.

Quantum-dot light-emitting diodes utilizing CdSe /ZnS nanocrystals embedded in TiO2 thin film

Science.gov (United States)

Kang, Seung-Hee; Kumar, Ch. Kiran; Lee, Zonghoon; Kim, Kyung-Hyun; Huh, Chul; Kim, Eui-Tae

2008-11-01

Quantum-dot (QD) light-emitting diodes (LEDs) are demonstrated on Si wafers by embedding core-shell CdSe /ZnS nanocrystals in TiO2 thin films via plasma-enhanced metallorganic chemical vapor deposition. The n-TiO2/QDs /p-Si LED devices show typical p-n diode current-voltage and efficient electroluminescence characteristics, which are critically affected by the removal of QD surface ligands. The TiO2/QDs /Si system we presented can offer promising Si-based optoelectronic and electronic device applications utilizing numerous nanocrystals synthesized by colloidal solution chemistry.

Mega-electron-volt ion beam induced anisotropic plasmon resonance of silver nanocrystals in glass

NARCIS (Netherlands)

Penninkhof, JJ; Polman, A; Sweatlock, LA; Maier, SA; Atwater, HA; Vredenberg, AM; Kooi, BJ; Sweatlock, Luke A.; Maier, Stefan A.

2003-01-01

30 MeV Si ion beam irradiation of silica glass containing Ag nanocrystals causes alignment of Ag nanocrystals in arrays along the ion tracks. Optical transmission measurements show a large splitting of the surface plasmon resonance bands for polarizations longitudinal and transversal to the arrays.

Light emission from silicon with tin-containing nanocrystals

Directory of Open Access Journals (Sweden)

Søren Roesgaard

2015-07-01

Full Text Available Tin-containing nanocrystals, embedded in silicon, have been fabricated by growing an epitaxial layer of Si1−x−ySnxCy, where x = 1.6 % and y = 0.04 % on a silicon substrate, followed by annealing at various temperatures ranging from 650 ∘C to 900 ∘C. The nanocrystal density and average diameters are determined by scanning transmission-electron microscopy to ≈1017 cm−3 and ≈5 nm, respectively. Photoluminescence spectroscopy demonstrates that the light emission is very pronounced for samples annealed at 725 ∘C, and Rutherford back-scattering spectrometry shows that the nanocrystals are predominantly in the diamond-structured phase at this particular annealing temperature. The origin of the light emission is discussed.

The role of nitrogen in luminescent Si nanoprecipitate formation during annealing of Si ion-implanted SiO sub 2 layers

CERN Document Server

Kachurin, G A; Zhuravlev, K S; Ruault, M O

2001-01-01

SiO sub 2 layers were implanted with 25 keV Si sup + and 13 keV N sup + ions with the doses of (1-4) x 10 sup 1 sup 6 cm sup - sup 2 and (0.2-2) x 10 sup 1 sup 6 cm sup - sup 2 , respectively. Then the samples were annealed at 900-1100 deg C to form luminescent silicon nanoprecipitates. The nitrogen effect on the process is controlled by photoluminescence spectra. It is found out that the photoluminescence intensity increases considerably at the appropriate ratio between silicon and nitrogen. It has been concluded that the interaction of nitrogen with excessive silicon results in increasing the number of precipitation centers. This raises the nanocrystals number and reduces their mean size

Optimizing colloidal nanocrystals for applications

International Nuclear Information System (INIS)

Sytnyk, M.

2015-01-01

+, which results in an enhancement of the magnetocrystalline anisotropy. As a result the complex ferri-magnetic properties of the nanocrystals become detectable at room temperature, whereas they were greatly restricted to cryogenic temperatures before the cation exchange. The improvements achieved by the cation exchange widens the applicability of the iron-oxide nanocrystals for spin based magneto-electronics applications. A related post synthetic treatment to the iron exchange is the galvanic exchange, applied in chapter 3 to transform Sn nanocrystals into Ag-Sn intermetallic alloys. These alloys are of high interest for catalytic applications and batteries. The special case of Sn nanocrystals appeared to be highly interesting due to the metal/metal-oxide core/shell nature of these nanocrystals. The naturally formed SnO2 shell, which spontaneously forms as soon the nanocrystals are exposed to air, plays a decisive role in the galvanic exchange process. While it appears to be permeable for Ag ions, enabling the desired galvanic transformation of the nanocrystal core to an AgSn alloy, it effectively protects the nanocrystals core from other metals, including nobel metals. These processes were evidenced in this work in detail by in-situ experiments, performed by synchrotron X-ray diffraction and proven by transmission electron microscopy. That the ion exchange can be used also for direct synthesis of chalcogenide semiconductor nanocrystals is shown in chapter 4. In this case the cation exchange reaction has been used for the in-situ synthesis of highly reactive metal precursors, which subsequently react with chalcogenides to form 2-4 nm small nanocrystals. Encouraging results were obtained for silver chalcogenides, representing 'green' alternatives to the commonly used infrared nanocrystals based on semiconductors containing toxic elements such as Pb and Hg. In this chapter only my own contribution to the work is described, namely the synthesis strategy, because further

Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure.

Science.gov (United States)

Niu, Gang; Capellini, Giovanni; Hatami, Fariba; Di Bartolomeo, Antonio; Niermann, Tore; Hussein, Emad Hameed; Schubert, Markus Andreas; Krause, Hans-Michael; Zaumseil, Peter; Skibitzki, Oliver; Lupina, Grzegorz; Masselink, William Ted; Lehmann, Michael; Xie, Ya-Hong; Schroeder, Thomas

2016-10-12

The epitaxial integration of highly heterogeneous material systems with silicon (Si) is a central topic in (opto-)electronics owing to device applications. InP could open new avenues for the realization of novel devices such as high-mobility transistors in next-generation CMOS or efficient lasers in Si photonics circuitry. However, the InP/Si heteroepitaxy is highly challenging due to the lattice (∼8%), thermal expansion mismatch (∼84%), and the different lattice symmetries. Here, we demonstrate the growth of InP nanocrystals showing high structural quality and excellent optoelectronic properties on Si. Our CMOS-compatible innovative approach exploits the selective epitaxy of InP nanocrystals on Si nanometric seeds obtained by the opening of lattice-arranged Si nanotips embedded in a SiO 2 matrix. A graphene/InP/Si-tip heterostructure was realized on obtained materials, revealing rectifying behavior and promising photodetection. This work presents a significant advance toward the monolithic integration of graphene/III-V based hybrid devices onto the mainstream Si technology platform.

Changes of the absorption cross section of Si nanocrystals with temperature and distance

Czech Academy of Sciences Publication Activity Database

Greben, M.; Khoroshyy, Petro; Gutsch, S.; Hiller, D.; Zacharias, M.; Valenta, J.

2017-01-01

Roč. 8, Nov 6 (2017), s. 2315-2323 ISSN 2190-4286 Institutional support: RVO:61388963 Keywords : absorption cross section * average lifetime * nanocrystal distance * photoluminescence decay * silicon nanocrystals Subject RIV: CF - Physical ; Theoretical Chemistry OBOR OECD: Physical chemistry Impact factor: 3.127, year: 2016 https://www.beilstein-journals.org/bjnano/articles/8/231

Development Considerations for Nanocrystal Drug Products.

Science.gov (United States)

Chen, Mei-Ling; John, Mathew; Lee, Sau L; Tyner, Katherine M

2017-05-01

Nanocrystal technology has emerged as a valuable tool for facilitating the delivery of poorly water-soluble active pharmaceutical ingredients (APIs) and enhancing API bioavailability. To date, the US Food and Drug Administration (FDA) has received over 80 applications for drug products containing nanocrystals. These products can be delivered by different routes of administration and are used in a variety of therapeutic areas. To aid in identifying key developmental considerations for these products, a retrospective analysis was performed on the submissions received by the FDA to date. Over 60% of the submissions were for the oral route of administration. Based on the Biopharmaceutics Classification System (BCS), most nanocrystal drugs submitted to the FDA are class II compounds that possess low aqueous solubility and high intestinal permeability. Impact of food on drug bioavailability was reduced for most nanocrystal formulations as compared with their micronized counterparts. For all routes of administration, dose proportionality was observed for some, but not all, nanocrystal products. Particular emphasis in the development of nanocrystal products was placed on the in-process tests and controls at critical manufacturing steps (such as milling process), mitigation and control of process-related impurities, and the stability of APIs or polymorphic form (s) during manufacturing and upon storage. This emphasis resulted in identifying challenges to the development of these products including accurate determination of particle size (distribution) of drug substance and/or nanocrystal colloidal dispersion, identification of polymorphic form (s), and establishment of drug substance/product specifications.

Interfacial interactions between calcined hydroxyapatite nanocrystals and substrates.

Science.gov (United States)

Okada, Masahiro; Furukawa, Keiko; Serizawa, Takeshi; Yanagisawa, Yoshihiko; Tanaka, Hidekazu; Kawai, Tomoji; Furuzono, Tsutomu

2009-06-02

Interfacial interactions between calcined hydroxyapatite (HAp) nanocrystals and surface-modified substrates were investigated by measuring adsorption behavior and adhesion strength with a quartz crystal microbalance (QCM) and a contact-mode atomic force microscope (AFM), respectively. The goal was to develop better control of HAp-nanocrystal coatings on biomedical materials. HAp nanocrystals with rodlike or spherical morphology were prepared by a wet chemical process followed by calcination at 800 degrees C with an antisintering agent to prevent the formation of sintered polycrystals. The substrate surface was modified by chemical reaction with a low-molecular-weight compound, or graft polymerization with a functional monomer. QCM measurement showed that the rodlike HAp nanocrystals adsorbed preferentially onto anionic COOH-modified substrates compared to cationic NH2- or hydrophobic CH3-modified substrates. On the other hand, the spherical nanocrystals adsorbed onto NH2- and COOH-modified substrates, which indicates that the surface properties of the HAp nanocrystals determined their adsorption behavior. The adhesion strength, which was estimated from the force required to move the nanocrystal in contact-mode AFM, on a COOH-grafted substrate prepared by graft polymerization was almost 9 times larger than that on a COOH-modified substrate prepared by chemical reaction with a low-molecular-weight compound, indicating that the long-chain polymer grafted on the substrate mitigated the surface roughness mismatch between the nanocrystal and the substrate. The adhesion strength of the nanocrystal bonded covalently by the coupling reaction to a Si(OCH3)-grafted substrate prepared by graft polymerization was approximately 1.5 times larger than that when adsorbed on the COOH-grafted substrate.

Hydrothermal synthesis of tungsten doped tin dioxide nanocrystals

Science.gov (United States)

Zhou, Cailong; Li, Yufeng; Chen, Yiwen; Lin, Jing

2018-01-01

Tungsten doped tin dioxide (WTO) nanocrystals were synthesized through a one-step hydrothermal method. The structure, composition and morphology of WTO nanocrystals were characterized by x-ray diffraction, x-ray photoelectron spectroscopy, energy dispersive x-ray spectroscopy, UV-vis diffuse reflectance spectra, zeta potential analysis and high-resolution transmission electron microscopy. Results show that the as-prepared WTO nanocrystals were rutile-type structure with the size near 13 nm. Compared with the undoped tin dioxide nanocrystals, the WTO nanocrystals possessed better dispersity in ethanol phase and formed transparent sol.

Ion beam synthesis of indium-oxide nanocrystals for improvement of oxide resistive random-access memories

Science.gov (United States)

Bonafos, C.; Benassayag, G.; Cours, R.; Pécassou, B.; Guenery, P. V.; Baboux, N.; Militaru, L.; Souifi, A.; Cossec, E.; Hamga, K.; Ecoffey, S.; Drouin, D.

2018-01-01

We report on the direct ion beam synthesis of a delta-layer of indium oxide nanocrystals (In2O3-NCs) in silica matrices by using ultra-low energy ion implantation. The formation of the indium oxide phase can be explained by (i) the affinity of indium with oxygen, (ii) the generation of a high excess of oxygen recoils generated by the implantation process in the region where the nanocrystals are formed and (iii) the proximity of the indium-based nanoparticles with the free surface and oxidation from the air. Taking advantage of the selective diffusivity of implanted indium in SiO2 with respect to Si3N4, In2O3-NCs have been inserted in the SiO2 switching oxide of micrometric planar oxide-based resistive random access memory (OxRAM) devices fabricated using the nanodamascene process. Preliminary electrical measurements show switch voltage from high to low resistance state. The devices with In2O3-NCs have been cycled 5 times with identical operating voltages and RESET current meanwhile no switch has been observed for non implanted devices. This first measurement of switching is very promising for the concept of In2O3-NCs based OxRAM memories.

Indomethacin nanocrystals prepared by different laboratory scale methods: effect on crystalline form and dissolution behavior

Energy Technology Data Exchange (ETDEWEB)

Martena, Valentina; Censi, Roberta [University of Camerino, School of Pharmacy (Italy); Hoti, Ela; Malaj, Ledjan [University of Tirana, Department of Pharmacy (Albania); Di Martino, Piera, E-mail: piera.dimartino@unicam.it [University of Camerino, School of Pharmacy (Italy)

2012-12-15

The objective of this study is to select very simple and well-known laboratory scale methods able to reduce particle size of indomethacin until the nanometric scale. The effect on the crystalline form and the dissolution behavior of the different samples was deliberately evaluated in absence of any surfactants as stabilizers. Nanocrystals of indomethacin (native crystals are in the {gamma} form) (IDM) were obtained by three laboratory scale methods: A (Batch A: crystallization by solvent evaporation in a nano-spray dryer), B (Batch B-15 and B-30: wet milling and lyophilization), and C (Batch C-20-N and C-40-N: Cryo-milling in the presence of liquid nitrogen). Nanocrystals obtained by the method A (Batch A) crystallized into a mixture of {alpha} and {gamma} polymorphic forms. IDM obtained by the two other methods remained in the {gamma} form and a different attitude to the crystallinity decrease were observed, with a more considerable decrease in crystalline degree for IDM milled for 40 min in the presence of liquid nitrogen. The intrinsic dissolution rate (IDR) revealed a higher dissolution rate for Batches A and C-40-N, due to the higher IDR of {alpha} form than {gamma} form for the Batch A, and the lower crystallinity degree for both the Batches A and C-40-N. These factors, as well as the decrease in particle size, influenced the IDM dissolution rate from the particle samples. Modifications in the solid physical state that may occur using different particle size reduction treatments have to be taken into consideration during the scale up and industrial development of new solid dosage forms.

Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices

Science.gov (United States)

Yu, Jie; Chen, Kun-ji; Ma, Zhong-yuan; Zhang, Xin-xin; Jiang, Xiao-fan; Wu, Yang-qing; Huang, Xin-fan; Oda, Shunri

2016-09-01

Based on the charge storage mode, it is important to investigate the scaling dependence of memory performance in silicon nanocrystal (Si-NC) nonvolatile memory (NVM) devices for its scaling down limit. In this work, we made eight kinds of test key cells with different gate widths and lengths by 0.13-μm node complementary metal oxide semiconductor (CMOS) technology. It is found that the memory windows of eight kinds of test key cells are almost the same of about 1.64 V @ ± 7 V/1 ms, which are independent of the gate area, but mainly determined by the average size (12 nm) and areal density (1.8 × 1011/cm2) of Si-NCs. The program/erase (P/E) speed characteristics are almost independent of gate widths and lengths. However, the erase speed is faster than the program speed of test key cells, which is due to the different charging behaviors between electrons and holes during the operation processes. Furthermore, the data retention characteristic is also independent of the gate area. Our findings are useful for further scaling down of Si-NC NVM devices to improve the performance and on-chip integration. Project supported by the State Key Development Program for Basic Research of China (Grant No. 2010CB934402) and the National Natural Science Foundation of China (Grant Nos. 11374153, 61571221, and 61071008).

Origin of blue photoluminescence from colloidal silicon nanocrystals fabricated by femtosecond laser ablation in solution.

Science.gov (United States)

Hao, H L; Wu, W S; Zhang, Y; Wu, L K; Shen, W Z

2016-08-12

We present a detailed investigation into the origin of blue emission from colloidal silicon (Si) nanocrystals (NCs) fabricated by femtosecond laser ablation of Si powder in 1-hexene. High resolution transmission electron microscopy and Raman spectroscopy observations confirm that Si NCs with average size 2.7 nm are produced and well dispersed in 1-hexene. Fourier transform infrared spectrum and x-ray photoelectron spectra have been employed to reveal the passivation of Si NCs surfaces with organic molecules. On the basis of the structural characterization, UV-visible absorption, temperature-dependent photoluminescence (PL), time-resolved PL, and PL excitation spectra investigations, we deduce that room-temperature blue luminescence from colloidal Si NCs originates from the following two processes: (i) under illumination, excitons first form within colloidal Si NCs by direct transition at the X or Γ (Γ25 → Γ'2) point; (ii) and then some trapped excitons migrate to the surfaces of colloidal Si NCs and further recombine via the surface states associated with the Si-C or Si-C-H2 bonds.

Highly aqueous soluble CaF2:Ce/Tb nanocrystals: effect of surface functionalization on structural, optical band gap, and photoluminescence properties.

Science.gov (United States)

Ansari, Anees A; Parchur, Abdul K; Kumar, Brijesh; Rai, S B

2016-12-01

The design of nanostructured materials with highly stable water-dispersion and luminescence efficiency is an important concern in nanotechnology and nanomedicine. In this paper, we described the synthesis and distinct surface modification on the morphological structure and optical (optical absorption, band gap energy, excitation, emission, decay time, etc.) properties of highly crystalline water-dispersible CaF 2 :Ce/Tb nanocrystals (core-nanocrystals). The epitaxial growth of inert CaF 2 and silica shell, respectively, on their surface forming as CaF 2 :Ce/Tb@CaF 2 (core/shell) and CaF 2 :Ce/Tb@CaF 2 @SiO 2 (core/shell/SiO 2 ) nanoarchitecture. X-ray diffraction and transmission electron microscope image shows that the nanocrystals were in irregular spherical phase, highly crystalline (~20 nm) with narrow size distribution. The core/shell nanocrystals confirm that the surface coating is responsible in the change of symmetrical nanostructure, which was determined from the band gap energy and luminescent properties. It was found that an inert inorganic shell formation effectively enhances the luminescence efficiency and silica shell makes the nanocrystals highly water-dispersible. In addition, Ce 3+ /Tb 3+ -co-doped CaF 2 nanocrystals show efficient energy transfer from Ce 3+ to Tb 3+ ion and strong green luminescence of Tb 3+ ion at 541 nm( 5 D 4 → 7 F 5 ). Luminescence decay curves of core and core/shell nanocrystals were fitted using mono and biexponential equations, and R 2 regression coefficient criteria were used to discriminate the goodness of the fitted model. The lifetime values for the core/shell nanocrystals are higher than core-nanocrystals. Considering the high stable water-dispersion and intensive luminescence emission in the visible region, these luminescent core/shell nanocrystals could be potential candidates for luminescent bio-imaging, optical bio-probe, displays, staining, and multianalyte optical sensing. A newly designed CaF 2 :Ce

Charge transport in a CoPt3 nanocrystal microwire

International Nuclear Information System (INIS)

Beecher, P.; De Marzi, G.; Quinn, A.J.; Redmond, G.; Shevchenko, E.V.; Weller, H.

2004-01-01

The electrical characteristics of single CoPt 3 nanocrystal microwires formed by magnetic field-directed growth from colloidal solutions are presented. The wires comprise disordered assemblies of discrete nanocrystals, separated from each other by protective organic ligand shells. Electrical data indicate that the activated charge transport properties of the wires are determined by the nanocrystal charging energy, governed by the size and capacitance of the individual nanocrystals. Focused ion beam-assisted deposition of Pt metal at the wire-electrode junctions is employed to optimize the wire-electrode contacts, whilst maintaining the nanocrystal-dominated transport characteristics of these one-dimensional nanocrystal structures

Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application

Directory of Open Access Journals (Sweden)

Gloux Florence

2011-01-01

Full Text Available Abstract Ge nanocrystals (Ge-NCs embedded in SiN dielectrics with HfO2/SiO2 stack tunnel dielectrics were synthesized by utilizing low-energy (≤5 keV ion implantation method followed by conventional thermal annealing at 800°C, the key variable being Ge+ ion implantation energy. Two different energies (3 and 5 keV have been chosen for the evolution of Ge-NCs, which have been found to possess significant changes in structural and chemical properties of the Ge+-implanted dielectric films, and well reflected in the charge storage properties of the Al/SiN/Ge-NC + SiN/HfO2/SiO2/Si metal-insulator-semiconductor (MIS memory structures. No Ge-NC was detected with a lower implantation energy of 3 keV at a dose of 1.5 × 1016 cm-2, whereas a well-defined 2D-array of nearly spherical and well-separated Ge-NCs within the SiN matrix was observed for the higher-energy-implanted (5 keV sample for the same implanted dose. The MIS memory structures implanted with 5 keV exhibits better charge storage and retention characteristics compared to the low-energy-implanted sample, indicating that the charge storage is predominantly in Ge-NCs in the memory capacitor. A significant memory window of 3.95 V has been observed under the low operating voltage of ± 6 V with good retention properties, indicating the feasibility of these stack structures for low operating voltage, non-volatile memory devices.

Intensely emitting CdTe nanocrystals retained initial photoluminescence efficiency in sol-gel derived Si1-xZrxO2 glass

International Nuclear Information System (INIS)

Yang, P.; Murase, N.

2007-01-01

Emitting CdTe nanocrystals (NCs) were embedded in pure glass matrices (Si 1-x Zr x O 2 , x≤0.15) using a controlled sol-gel method, where the pre-hydrolyzed condition, the molar ratio of Zr/Si, the gelation time, the pH, and the amount of alcohol were judiciously optimized considering the surface condition of the NCs and the mechanism of the glass formation. As a result, the prepared glass phosphor exhibited high photoluminescence efficiencies (40% for green and 60% for red when Zr/Si was 5-10%) by retaining their initial values as in CdTe colloidal solution. To our knowledge, these values are the highest among those ever obtained for any solid matrices containing NCs. Because of the existence of Zr, the prepared glasses exhibit much better resistance against the ambient atmosphere, heat-treatment, and boiling water compared with pure silica glass (x=0) or the glass prepared from our other methods using a silane coupling agent. Thus, the obtained glass is promising for applications such as optical devices. (orig.)

Engineering Plasmonic Nanocrystal Coupling through Template-Assisted Self-Assembly

Science.gov (United States)

Greybush, Nicholas J.

The construction of materials from nanocrystal building blocks represents a powerful new paradigm for materials design. Just as nature's materials orchestrate intricate combinations of atoms from the library of the periodic table, nanocrystal "metamaterials" integrate individual nanocrystals into larger architectures with emergent collective properties. The individual nanocrystal "meta-atoms" that make up these materials are themselves each a nanoscale atomic system with tailorable size, shape, and elemental composition, enabling the creation of hierarchical materials with predesigned structure at multiple length scales. However, an improved fundamental understanding of the interactions among individual nanocrystals is needed in order to translate this structural control into enhanced functionality. The ability to form precise arrangements of nanocrystals and measure their collective properties is therefore essential for the continued development of nanocrystal metamaterials. In this dissertation, we utilize template-assisted self-assembly and spatially-resolved spectroscopy to form and characterize individual nanocrystal oligomers. At the intersection of "top-down" and "bottom-up" nanoscale patterning schemes, template-assisted self-assembly combines the design freedom of lithography with the chemical control of colloidal synthesis to achieve unique nanocrystal configurations. Here, we employ shape-selective templates to assemble new plasmonic structures, including heterodimers of Au nanorods and upconversion phosphors, a series of hexagonally-packed Au nanocrystal oligomers, and triangular formations of Au nanorods. Through experimental analysis and numerical simulation, we elucidate the means through which inter-nanocrystal coupling imparts collective optical properties to the plasmonic assemblies. Our self-assembly and measurement strategy offers a versatile platform for exploring optical interactions in a wide range of material systems and application areas.

Facile synthesis of water-soluble curcumin nanocrystals

Directory of Open Access Journals (Sweden)

Marković Zoran M.

2015-01-01

Full Text Available In this paper, facile synthesis of water soluble curcumin nanocrystals is reported. Solvent exchange method was applied to synthesize curcumin nanocrystals. Different techniques were used to characterize the structural and photophysical properties of curcumin nanocrystals. We found that nanocurcumin prepared by this method had good chemical and physical stability, could be stored in the powder form at room temperature, and was freely dispersible in water. It was established that the size of curcumin nanocrystals was varied in the range of 20-500 nm. Fourier transform infrared spectroscopy and UV-Vis analyses showed the presence of tetrahydrofuran inside the curcumin nanocrystals. Also, it was found that nanocurcumin emitted photoluminescencewith yellow-green colour. [Projekat Ministarstva nauke Republike Srbije, br. 172003

Formation of colloidal semiconductor nanocrystals. The aspect of nucleation

Energy Technology Data Exchange (ETDEWEB)

Kudera, S.

2007-08-17

The present work describes different techniques to control some major parameters of colloidal nanocrystals. The individual techniques rely on the manipulation of the nucleation event. The sensitive control of the nanocrystals' size and shape is discussed. Furthermore the formation of hybrid nanocrystals composed of different materials is presented. The synthesis technique for the production of the different samples involves organic solvents and surfactants and reactions at elevated temperatures. The presence of magic size clusters offers a possibility to control the size of the nanocrystals even at very small dimensions. The clusters produced comprise ca. 100 atoms. In the case of CdSe, nanocrystals of this size emit a blue fluorescence and therefore extend the routinely accessible spectrum for this material over the whole visible range. Samples fluorescing in the spectral range from green to red are produced with standard recipes. In this work a reaction scheme for magic size clusters is presented and a theoretical model to explain the particular behaviour of their growth dynamics is discussed. The samples are investigated by optical spectroscopy, transmission electron microscopy, X-ray diffraction and elemental analysis. A method to form branched nanocrystals is discussed. The branching point is analysed by high resolution transmission electron microscopy and proves for the occurrence of a multiple twinned structure are strengthened by simulation of the observed patterns. Two different techniques to generate nanocrystals of this type are presented. The first relies on a seeded growth approach in which the nucleation of the second material is allowed only on de ned sites of the seeds. The second technique uses the tips of pre-formed nano-dumbbells as sacrificial domains. The material on the tips is replaced by gold. Hybrid materials are formed by a seeded-growth mechanism. Pre-formed nanocrystals provide the nucleation sites for the second material. (orig.)

Formation of colloidal semiconductor nanocrystals. The aspect of nucleation

Energy Technology Data Exchange (ETDEWEB)

Kudera, S

2007-08-17

The present work describes different techniques to control some major parameters of colloidal nanocrystals. The individual techniques rely on the manipulation of the nucleation event. The sensitive control of the nanocrystals' size and shape is discussed. Furthermore the formation of hybrid nanocrystals composed of different materials is presented. The synthesis technique for the production of the different samples involves organic solvents and surfactants and reactions at elevated temperatures. The presence of magic size clusters offers a possibility to control the size of the nanocrystals even at very small dimensions. The clusters produced comprise ca. 100 atoms. In the case of CdSe, nanocrystals of this size emit a blue fluorescence and therefore extend the routinely accessible spectrum for this material over the whole visible range. Samples fluorescing in the spectral range from green to red are produced with standard recipes. In this work a reaction scheme for magic size clusters is presented and a theoretical model to explain the particular behaviour of their growth dynamics is discussed. The samples are investigated by optical spectroscopy, transmission electron microscopy, X-ray diffraction and elemental analysis. A method to form branched nanocrystals is discussed. The branching point is analysed by high resolution transmission electron microscopy and proves for the occurrence of a multiple twinned structure are strengthened by simulation of the observed patterns. Two different techniques to generate nanocrystals of this type are presented. The first relies on a seeded growth approach in which the nucleation of the second material is allowed only on de ned sites of the seeds. The second technique uses the tips of pre-formed nano-dumbbells as sacrificial domains. The material on the tips is replaced by gold. Hybrid materials are formed by a seeded-growth mechanism. Pre-formed nanocrystals provide the nucleation sites for the second material. (orig.)

Evolution of microstructural defects with strain effects in germanium nanocrystals synthesized at different annealing temperatures

Energy Technology Data Exchange (ETDEWEB)

Zhang, Minghuan; Cai, Rongsheng; Zhang, Yujuan; Wang, Chao [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308, Ningxia Road, Qingdao 266071 (China); College of Chemistry and Chemical Engineering, Qingdao University, No. 308, Ningxia Road, Qingdao 266071 (China); Wang, Yiqian, E-mail: yqwang@qdu.edu.cn [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308, Ningxia Road, Qingdao 266071 (China); College of Physics Science, Qingdao University, No. 308, Ningxia Road, Qingdao 266071 (China); Ross, Guy G.; Barba, David [INRS-EMT, 1650 Boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2 (Canada)

2014-07-01

Ge nanocrystals (Ge-ncs) were produced by implantation of {sup 74}Ge{sup +} into a SiO{sub 2} film on (100) Si, followed by high-temperature annealing from 700 °C to 1100 °C. Transmission electron microscopy (TEM) studies show that the average size of Ge-ncs increases with the annealing temperature. High-resolution TEM (HRTEM) investigations reveal the presence of planar and linear defects in the formed Ge-ncs, whose relative concentrations are determined at each annealing temperature. The relative concentration of planar defects is almost independent of the annealing temperature up to 1000 °C. However, from 1000 °C to 1100 °C, its concentration decreases dramatically. For the linear defects, their concentration varies considerably with the annealing temperatures. In addition, by measuring the interplanar spacing of Ge-ncs from the HRTEM images, a strong correlation is found between the dislocation percentage and the stress field intensity. Our results provide fundamental insights regarding both the presence of microstructural defects and the origin of the residual stress field within Ge-ncs, which can shed light on the fabrication of Ge-ncs with quantified crystallinity and appropriate size for the advanced Ge-nc devices. - Highlights: • Growth of Ge nanocrystals at different annealing temperatures was investigated. • Strain field has great effects on the formation of dislocations. • Different mechanisms are proposed to explain growth regimes of Ge nanocrystals.

High performance SONOS flash memory with in-situ silicon nanocrystals embedded in silicon nitride charge trapping layer

Science.gov (United States)

Lim, Jae-Gab; Yang, Seung-Dong; Yun, Ho-Jin; Jung, Jun-Kyo; Park, Jung-Hyun; Lim, Chan; Cho, Gyu-seok; Park, Seong-gye; Huh, Chul; Lee, Hi-Deok; Lee, Ga-Won

2018-02-01

In this paper, SONOS-type flash memory device with highly improved charge-trapping efficiency is suggested by using silicon nanocrystals (Si-NCs) embedded in silicon nitride (SiNX) charge trapping layer. The Si-NCs were in-situ grown by PECVD without additional post annealing process. The fabricated device shows high program/erase speed and retention property which is suitable for multi-level cell (MLC) application. Excellent performance and reliability for MLC are demonstrated with large memory window of ∼8.5 V and superior retention characteristics of 7% charge loss for 10 years. High resolution transmission electron microscopy image confirms the Si-NC formation and the size is around 1-2 nm which can be verified again in X-ray photoelectron spectroscopy (XPS) where pure Si bonds increase. Besides, XPS analysis implies that more nitrogen atoms make stable bonds at the regular lattice point. Photoluminescence spectra results also illustrate that Si-NCs formation in SiNx is an effective method to form deep trap states.

Optical properties of uniformly sized silicon nanocrystals within a single silicon oxide layer

Energy Technology Data Exchange (ETDEWEB)

En Naciri, A., E-mail: aotmane.en-naciri@univ-lorraine.fr [Universite de Lorraine, LCP-A2MC, Institut Jean Barriol (France); Miska, P. [Universite de Lorraine, Institut Jean Lamour CNRS UMR 7198 (France); Keita, A.-S. [Max Planck Institute for Intelligent Systems (Germany); Battie, Y. [Universite de Lorraine, LCP-A2MC, Institut Jean Barriol (France); Rinnert, H.; Vergnat, M. [Universite de Lorraine, Institut Jean Lamour CNRS UMR 7198 (France)

2013-04-15

Silicon nanocrystals (Si-NC) with different sizes (2-6 nm) are synthesized by evaporation. The system is composed of a single Si-NC layer that is well controlled in size. The numerical modeling of such system, without a large size distribution, is suitable to perform easily the optical calculations. The nanocrystal size and confinement effects on the optical properties are determined by photoluminescence (PL) measurements, absorption in the UV visible range, and spectroscopic ellipsometry (SE). The optical constants and the bandgap energies are then extracted and analyzed. The dependence of the optical responses with the decrease of the size of the Si-NC occurs not only with a drastic reduction of the amplitudes of dielectric function but also by a significant expansion of the optical gap. This study supports the idea of a presence of a critical size of Si-NC for which the confinement effect becomes weak. The evolution of those bandgap energies are discussed in comparison with values reported in literature.

Adsorption behavior and current-voltage characteristics of CdSe nanocrystals on hydrogen-passivated silicon

DEFF Research Database (Denmark)

Walzer, Karsten; Quaade, Ulrich; Ginger, D.S.

2002-01-01

Using scanning tunneling microscopy and spectroscopy we have studied both the geometric distribution and the conduction properties of organic shell capped CdSe nanocrystals adsorbed on hydrogen-passivated Si(100). At submonolayer concentrations, the nanocrystal distribution on the surface was found...... found that the current through the MIS junction is limited by the nanocrystals only in one bias direction, while in the other bias direction the current is limited by the semiconducting substrate. This property may be of relevance for the construction of hybrid electronic devices combining semiconductor...

Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

International Nuclear Information System (INIS)

Shuleiko, D V; Ilin, A S

2016-01-01

Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

Second- and third-harmonic generation as a local probe for nanocrystal-doped polymer materials with a suppressed optical breakdown threshold

Science.gov (United States)

Konorov, S. O.; Fedotov, A. B.; Ivanov, A. A.; Alfimov, M. V.; Zabotnov, S. V.; Naumov, A. N.; Sidorov-Biryukov, D. A.; Podshivalov, A. A.; Petrov, A. N.; Fornarini, L.; Carpanese, M.; Ferrante, G.; Fantoni, R.; Zheltikov, A. M.

2003-09-01

Second- and third-harmonic generation processes are shown to allow the detection of absorptive agglomerates of nanocrystals in transparent materials and the visualization of optical breakdown in nanocomposite materials. Correlations between laser-induced breakdown and the behavior of the second- and third-harmonic signals produced in SiC/PMMA nanocomposite films are studied. The potential of second- and third-harmonic generation for the on-line visualization of laser breakdown in nanocomposite polymer materials is revealed, with the ablative material removal being monitored by the decay of the second- and third-harmonic signals. The second and third harmonics generated around the optical breakdown threshold by 75-fs pulses of 1.25-μm Cr:forsterite laser radiation are respectively more than two and four orders of magnitude more intense than the second and third harmonics produced under identical conditions by 40-ps pulses of a Nd:YAG laser. The breakdown threshold for PMMA films doped with 10-20-nm SiC nanocrystals forming absorptive agglomerates are demonstrated to be more than an order of magnitude lower than the breakdown threshold for crystalline SiC and about an order of magnitude lower than that for nondoped PMMA films.

Assembly of Ge nanocrystals on SiO2 via a stress-induced dewetting process

International Nuclear Information System (INIS)

Sutter, E; Sutter, P

2006-01-01

We use epitaxial Ge islands on silicon-on-insulator (001) to initiate and drive the dewetting of the ultrathin ( 2 layer and transforms the Ge islands into oxide-supported, electrically isolated, Ge-rich nanocrystals. We investigate the process of dewetting and demonstrate that it can be used for the controlled assembly of nanocrystals-from isolated single ones to dense arrays

Photoluminescence from ZnO-SiO2 opals with different sphere diameters and thicknesses

International Nuclear Information System (INIS)

Yang Yingling; Yan Hongwei; Fu Zhengping; Yang Beifang; Xia Linsheng; Wang Zhen; Zuo Jian; Yu Shijun; Fu Shengquan; Li Fanqing

2007-01-01

We systematically investigated the photoluminescence (PL) and transmittance characteristics of ZnO-SiO 2 opals with varied positions of the stop-band and film thicknesses. An improved ultraviolet (UV) luminescence was observed from ZnO-SiO 2 composites over pure ZnO nanocrystals under 325 nm He-Cd laser excitation at room temperature. The UV PL of ZnO nanocrystals in SiO 2 opals with stop-bands center of 410 nm is sensitive to the thickness of opal films, and the UV PL intensity increases with the film thickness increasing. The PL spectra of ZnO nanocrystals in SiO 2 opals with stop-bands center of 570 nm show a suppression of the weak visible band. The experimental results are discussed based on the scattering and/or absorbance in opal crystals

Gas-phase synthesis of semiconductor nanocrystals and its applications

Science.gov (United States)

Mandal, Rajib

Luminescent nanomaterials is a newly emerging field that provides challenges not only to fundamental research but also to innovative technology in several areas such as electronics, photonics, nanotechnology, display, lighting, biomedical engineering and environmental control. These nanomaterials come in various forms, shapes and comprises of semiconductors, metals, oxides, and inorganic and organic polymers. Most importantly, these luminescent nanomaterials can have different properties owing to their size as compared to their bulk counterparts. Here we describe the use of plasmas in synthesis, modification, and deposition of semiconductor nanomaterials for luminescence applications. Nanocrystalline silicon is widely known as an efficient and tunable optical emitter and is attracting great interest for applications in several areas. To date, however, luminescent silicon nanocrystals (NCs) have been used exclusively in traditional rigid devices. For the field to advance towards new and versatile applications for nanocrystal-based devices, there is a need to investigate whether these NCs can be used in flexible and stretchable devices. We show how the optical and structural/morphological properties of plasma-synthesized silicon nanocrystals (Si NCs) change when they are deposited on stretchable substrates made of polydimethylsiloxane (PDMS). Synthesis of these NCs was performed in a nonthermal, low-pressure gas phase plasma reactor. To our knowledge, this is the first demonstration of direct deposition of NCs onto stretchable substrates. Additionally, in order to prevent oxidation and enhance the luminescence properties, a silicon nitride shell was grown around Si NCs. We have demonstrated surface nitridation of Si NCs in a single step process using non?thermal plasma in several schemes including a novel dual-plasma synthesis/shell growth process. These coated NCs exhibit SiNx shells with composition depending on process parameters. While measurements including

Dy3+-doped nano-glass ceramics comprising NaAlSiO4 and NaY9Si6O26 nanocrystals for white light generation

International Nuclear Information System (INIS)

Bagga, Ruchika; Achanta, Venu Gopal; Goel, Ashutosh; Ferreira, José M.F.; Singh, Narinder Pal; Singh, Davinder Paul; Falconieri, Mauro; Sharma, Gopi

2013-01-01

Highlights: ► Environment safe glass ceramics were fabricated via heat treatment. ► Optical and structural properties were studied before and after heat treatment. ► White light generation with single RE 3+ ion-doping was observed under UV excitation. ► Emission color temperature was between fluorescent tube and daylight values. - Abstract: The radiative emission properties of the Dy 3+ ions in oxyfluoride glasses and glass ceramics have been investigated for the generation of white light. The X-ray diffraction pattern of the glass ceramics reveals the presence of NaAlSiO 4 nanocrystals along with secondary phase of NaY 9 Si 6 O 26 in the glass matrix after a suitable thermal treatment of the pristine glasses. Intense white light emission has been observed when the samples are excited with 350 nm light. Yellow to blue emission intensity ratios and chromaticity color coordinates have been determined from the visible luminescence spectra. All color coordinates are found to lie in the white region of the chromaticity color diagram proposing the suitability of the present studied materials for color display devices.

Isolating and moving single atoms using silicon nanocrystals

Science.gov (United States)

Carroll, Malcolm S.

2010-09-07

A method is disclosed for isolating single atoms of an atomic species of interest by locating the atoms within silicon nanocrystals. This can be done by implanting, on the average, a single atom of the atomic species of interest into each nanocrystal, and then measuring an electrical charge distribution on the nanocrystals with scanning capacitance microscopy (SCM) or electrostatic force microscopy (EFM) to identify and select those nanocrystals having exactly one atom of the atomic species of interest therein. The nanocrystals with the single atom of the atomic species of interest therein can be sorted and moved using an atomic force microscope (AFM) tip. The method is useful for forming nanoscale electronic and optical devices including quantum computers and single-photon light sources.

Structural and optical properties of germanium nanostructures on Si(100 and embedded in high-k oxides

Directory of Open Access Journals (Sweden)

Ray Samit

2011-01-01

Full Text Available Abstract The structural and optical properties of Ge quantum dots (QDs grown on Si(001 for mid-infrared photodetector and Ge nanocrystals embedded in oxide matrices for floating gate memory devices are presented. The infrared photoluminescence (PL signal from Ge islands has been studied at a low temperature. The temperature- and bias-dependent photocurrent spectra of a capped Si/SiGe/Si(001 QDs infrared photodetector device are presented. The properties of Ge nanocrystals of different size and density embedded in high-k matrices grown using radio frequency magnetron sputtering have been studied. Transmission electron micrographs have revealed the formation of isolated spherical Ge nanocrystals in high-k oxide matrix of sizes ranging from 4 to 18 nm. Embedded nanocrystals in high band gap oxides have been found to act as discrete trapping sites for exchanging charge carriers with the conduction channel by direct tunneling that is desired for applications in floating gate memory devices.

Improved size distribution control of silicon nanocrystals in a spatially confined remote plasma

NARCIS (Netherlands)

Dogan, I.; Westerman, R. H. J.; M. C. M. van de Sanden,

2015-01-01

This work demonstrates how to improve the size distribution of silicon nanocrystals (Si-NCs) synthesized in a remote plasma, in which the flow dynamics and the particular chemistry initially resulted in the formation of small (2-10 nm) and large (50-120 nm) Si-NCs. Plasma consists of two regions: an

Enhanced photoluminescence of Si nanocrystals-doped cellulose nanofibers by plasmonic light scattering

Energy Technology Data Exchange (ETDEWEB)

Sugimoto, Hiroshi [Department of Electrical and Computer Engineering and Photonics Center, Boston University, 8 Saint Mary Street, Boston, Massachusetts 02215 (United States); Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501 (Japan); Zhang, Ran [Division of Materials Science and Engineering, Boston University, 15 Saint Mary' s Street, Brookline, Massachusetts 02446 (United States); Reinhard, Björn M. [Department of Chemistry and Photonics Center, Boston University, Boston, Massachusetts 02215 (United States); Fujii, Minoru [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501 (Japan); Perotto, Giovanni; Marelli, Benedetto; Omenetto, Fiorenzo G. [Department of Biomedical Engineering and Department of Physics, Tufts University, 4 Colby Street, Medford, Massachusetts 02155 (United States); Dal Negro, Luca, E-mail: dalnegro@bu.edu [Department of Electrical and Computer Engineering and Photonics Center, Boston University, 8 Saint Mary Street, Boston, Massachusetts 02215 (United States); Division of Materials Science and Engineering, Boston University, 15 Saint Mary' s Street, Brookline, Massachusetts 02446 (United States)

2015-07-27

We report the development of bio-compatible cellulose nanofibers doped with light emitting silicon nanocrystals and Au nanoparticles via facile electrospinning. By performing photoluminescence (PL) spectroscopy as a function of excitation wavelength, we demonstrate plasmon-enhanced PL by a factor of 2.2 with negligible non-radiative quenching due to plasmon-enhanced scattering of excitation light from Au nanoparticles to silicon nanocrystals inside the nanofibers. These findings provide an alternative approach for the development of plasmon-enhanced active systems integrated within the compact nanofiber geometry. Furthermore, bio-compatible light-emitting nanofibers prepared by a cost-effective solution-based processing are very promising platforms for biophotonic applications such as fluorescence sensing and imaging.

Compositional and optical properties of SiO x films and (SiO x /SiO y ) junctions deposited by HFCVD

Science.gov (United States)

2014-01-01

In this work, non-stoichiometric silicon oxide (SiO x ) films and (SiO x /SiO y ) junctions, as-grown and after further annealing, are characterized by different techniques. The SiO x films and (SiO x /SiO y ) junctions are obtained by hot filament chemical vapor deposition technique in the range of temperatures from 900°C to 1,150°C. Transmittance spectra of the SiO x films showed a wavelength shift of the absorption edge thus indicating an increase in the optical energy band gap, when the growth temperature decreases; a similar behavior is observed in the (SiO x /SiO y ) structures, which in turn indicates a decrease in the Si excess, as Fourier transform infrared spectroscopy (FTIR) reveals, so that, the film and junction composition changes with the growth temperature. The analysis of the photoluminescence (PL) results using the quantum confinement model suggests the presence of silicon nanocrystal (Si-nc) embedded in a SiO x matrix. For the case of the as-grown SiO x films, the absorption and emission properties are correlated with quantum effects in Si-nc and defects. For the case of the as-grown (SiO x /SiO y ) junctions, only the emission mechanism related to some kinds of defects was considered, but silicon nanocrystal embedded in a SiO x matrix is present. After thermal annealing, a phase separation into Si and SiO2 occurs, as the FTIR spectra illustrates, which has repercussions in the absorption and emission properties of the films and junctions, as shown by the change in the A and B band positions on the PL spectra. These results lead to good possibilities for proposed novel applications in optoelectronic devices. PACS 61.05.-a; 68.37.Og; 61.05.cp; 78.55.-m; 68.37.Ps; 81.15.Gh PMID:25342935

Structure Map for Embedded Binary Alloy Nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Yuan, C.W.; Shin, S.J.; Liao, C.Y.; Guzman, J.; Stone, P.R.; Watanabe, M.; Ager III, J.W.; Haller, E.E.; Chrzan, D.C.

2008-09-20

The equilibrium structure of embedded nanocrystals formed from strongly segregating binary-alloys is considered within a simple thermodynamic model. The model identifies two dimensionlessinterface energies that dictate the structure, and allows prediction of the stable structure for anychoice of these parameters. The resulting structure map includes three distinct nanocrystal mor-phologies: core/shell, lobe/lobe, and completely separated spheres.

Modified spontaneous emission of silicon nanocrystals embedded in artificial opals

Science.gov (United States)

Janda, Petr; Valenta, Jan; Rehspringer, Jean-Luc; Mafouana, Rodrigue R.; Linnros, Jan; Elliman, Robert G.

2007-10-01

Si nanocrystals (NCs) were embedded in synthetic silica opals by means of Si-ion implantation or opal impregnation with porous-Si suspensions. In both types of sample photoluminescence (PL) is strongly Bragg-reflection attenuated (up to 75%) at the frequency of the opal stop-band in a direction perpendicular to the (1 1 1) face of the perfect hcp opal structure. Time-resolved PL shows a rich distribution of decay rates, which contains both shorter and longer decay components compared with the ordinary stretched exponential decay of Si NCs. This effect reflects changes in the spontaneous emission rate of Si NCs due to variations in the local density of states of real opal containing defects.

Modified spontaneous emission of silicon nanocrystals embedded in artificial opals

International Nuclear Information System (INIS)

Janda, Petr; Valenta, Jan; Rehspringer, Jean-Luc; Mafouana, Rodrigue R; Linnros, Jan; Elliman, Robert G

2007-01-01

Si nanocrystals (NCs) were embedded in synthetic silica opals by means of Si-ion implantation or opal impregnation with porous-Si suspensions. In both types of sample photoluminescence (PL) is strongly Bragg-reflection attenuated (up to 75%) at the frequency of the opal stop-band in a direction perpendicular to the (1 1 1) face of the perfect hcp opal structure. Time-resolved PL shows a rich distribution of decay rates, which contains both shorter and longer decay components compared with the ordinary stretched exponential decay of Si NCs. This effect reflects changes in the spontaneous emission rate of Si NCs due to variations in the local density of states of real opal containing defects

Modified spontaneous emission of silicon nanocrystals embedded in artificial opals

Energy Technology Data Exchange (ETDEWEB)

Janda, Petr [Department of Chemical Physics and Optics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, 121 16 Prague 2 (Czech Republic); Valenta, Jan [Department of Chemical Physics and Optics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, 121 16 Prague 2 (Czech Republic); Rehspringer, Jean-Luc [Institut de Physique et Chimie des Materiaux de Strasbourg, GMI et GONLO, UMR46 CNRS-ULP-ECPM, 23, rue du Loess, F-67037 Strasbourg (France); Mafouana, Rodrigue R [Institut de Physique et Chimie des Materiaux de Strasbourg, GMI et GONLO, UMR46 CNRS-ULP-ECPM, 23, rue du Loess, F-67037 Strasbourg (France); Linnros, Jan [Laboratory of Material and Semiconductor Physics, Royal Institute of Technology, Electrum 229, 164 21 Kista-Stockholm (Sweden); Elliman, Robert G [Electronic Materials Engineering Department, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT 0200 (Australia)

2007-10-07

Si nanocrystals (NCs) were embedded in synthetic silica opals by means of Si-ion implantation or opal impregnation with porous-Si suspensions. In both types of sample photoluminescence (PL) is strongly Bragg-reflection attenuated (up to 75%) at the frequency of the opal stop-band in a direction perpendicular to the (1 1 1) face of the perfect hcp opal structure. Time-resolved PL shows a rich distribution of decay rates, which contains both shorter and longer decay components compared with the ordinary stretched exponential decay of Si NCs. This effect reflects changes in the spontaneous emission rate of Si NCs due to variations in the local density of states of real opal containing defects.

UV and air stability of high-efficiency photoluminescent silicon nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Yang, Jihua, E-mail: yangj@umn.edu [Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Liptak, Richard [Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Department of Physics and Optical Engineering, Rose-Hulman Institute of Technology, 5500 Wabash Ave, Terre Haute, IN 47803 (United States); Rowe, David; Wu, Jeslin [Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Casey, James; Witker, David [Dow Corning Corporation, 2200 W. Salzburg Road, Midland, MI 48686 (United States); Campbell, Stephen A. [Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Kortshagen, Uwe, E-mail: kortshagen@umn.edu [Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 (United States)

2014-12-30

The effects of UV light and air exposure on the photoluminescent properties of nonthermal plasma-synthesized silicon nanocrystals (Si NCs) were investigated. Si NCs with high-efficiency photoluminescence (PL) have been achieved via a post-synthesis hydrosilylation process. Photobleaching is observed within the first few hours of ultra-violet (UV) irradiation. Equilibrium is reached after ∼4 h of UV exposure wherein the Si NCs are able to retain 52% of the initially measured PL quantum yield (PLQY). UV-treated Si NCs showed recovery of PL with time. Gas-phase passivation of Si NCs by hydrogen afterglow injection improves PLQY and PL stability against UV and air exposure. Additionally, phosphorous doping can also improve UV stability of photoluminescent Si NCs.

Analyses of the As doping of SiO{sub 2}/Si/SiO{sub 2} nanostructures

Energy Technology Data Exchange (ETDEWEB)

Ruffino, Francesco; Miritello, Maria [CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy); Tomasello, Mario Vincenzo [Scuola Superiore di Catania, via San Nullo 5/i, 95123 Catania (Italy); De Bastiani, Riccardo; Grimaldi, Maria Grazia [Dipartimento di Fisica ed Astronomia, Universita di Catania, via S. Sofia 64, 95123 Catania (Italy); CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy); Nicotra, Giuseppe; Spinella, Corrado [Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), VIII Strada 5, 95121 Catania (Italy)

2011-03-15

We illustrate the behaviour of As when it is confined, by the implantation technique, in a SiO{sub 2}(70nm)/Si(30nm)/SiO{sub 2}(70nm) multilayer and its spatial redistribution when annealing processes are performed. By Rutherford backscattering spectrometry and Z-contrast transmission electron microscopy we found an As accumulation at the Si/SiO{sub 2} interfaces and at the Si grain boundaries with no segregation of the As in the Si layer. Such an effect is in agreement with a model that assumes a traps distribution in the Si in the first 2-3 nm above the SiO{sub 2}/Si interfaces and along the Si grain boundaries. The traps concentration at the Si/SiO{sub 2} interfaces was estimated in 10{sup 14} traps/cm{sup 2}. The outlined results can open perspectives on the doping properties of As in Si nanocrystals, whose applications in nanoelectronics and optoelectronics are widely investigated (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Assembling a Lasing Hybrid Material With Supramolecular Polymers and Nanocrystals

National Research Council Canada - National Science Library

Li, Leiming

2003-01-01

.... In the system containing ZnO nanocrystals as the inorganic component, both phases are oriented in the hybrid material forming an ultraviolet lasing medium with a lower threshold relative to pure ZnO nanocrystals.

Resonance Raman spectra of wurtzite and zincblende CdSe nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Kelley, Anne Myers, E-mail: amkelley@ucmerced.edu [Chemistry and Chemical Biology, School of Natural Sciences, University of California, 5200 North Lake Road, Merced, CA 95343 (United States); Dai, Quanqin; Jiang, Zhong-jie; Baker, Joshua A.; Kelley, David F. [Chemistry and Chemical Biology, School of Natural Sciences, University of California, 5200 North Lake Road, Merced, CA 95343 (United States)

2013-08-30

Highlights: ► Very similar resonance Raman spectra of wurtzite and zincblende CdSe nanocrystals. ► First absolute resonance Raman cross-sections reported for CdSe nanocrystals. ► LO overtones suggest slightly stronger electron–phonon coupling in wurtzite form. - Abstract: Resonance Raman spectra and absolute differential Raman cross-sections have been measured for CdSe nanocrystals in both the wurtzite and zincblende crystal forms at four excitation wavelengths from 457.9 to 514.5 nm. The frequency and bandshape of the longitudinal optical (LO) phonon fundamental is essentially identical for both crystal forms at each excitation wavelength. The LO phonon overtone to fundamental intensity ratio appears to be slightly higher for the wurtzite form, which may suggest slightly stronger exciton–phonon coupling from the Fröhlich mechanism in the wurtzite form. The LO fundamental Raman cross-sections are very similar for both crystal forms at each excitation wavelength.

Structure and transformation of tactoids in cellulose nanocrystal suspensions

Science.gov (United States)

Wang, Pei-Xi; Hamad, Wadood Y.; MacLachlan, Mark J.

2016-05-01

Cellulose nanocrystals obtained from natural sources are of great interest for many applications. In water, cellulose nanocrystals form a liquid crystalline phase whose hierarchical structure is retained in solid films after drying. Although tactoids, one of the most primitive components of liquid crystals, are thought to have a significant role in the evolution of this phase, they have evaded structural study of their internal organization. Here we report the capture of cellulose nanocrystal tactoids in a polymer matrix. This method allows us to visualize, for the first time, the arrangement of cellulose nanocrystals within individual tactoids by electron microscopy. Furthermore, we can follow the structural evolution of the liquid crystalline phase from tactoids to iridescent-layered films. Our insights into the early nucleation events of cellulose nanocrystals give important information about the growth of cholesteric liquid crystalline phases, especially for cellulose nanocrystals, and are crucial for preparing photonics-quality films.

Structural and optical characterization of self-assembled Ge nanocrystal layers grown by plasma-enhanced chemical vapor deposition

NARCIS (Netherlands)

Saeed, S.; Buters, F.; Dohnalova, K.; Wosinski, L.; Gregorkiewicz, T.

2014-01-01

We present a structural and optical study of solid-state dispersions of Ge nanocrystals prepared by plasma-enhanced chemical vapor deposition. Structural analysis shows the presence of nanocrystalline germanium inclusions embedded in an amorphous matrix of Si-rich SiO2. Optical characterization

Thermal decomposition of silane to form hydrogenated amorphous Si

Science.gov (United States)

Strongin, M.; Ghosh, A.K.; Wiesmann, H.J.; Rock, E.B.; Lutz, H.A. III

Hydrogenated amorphous silicon is produced by thermally decomposing silane (SiH/sub 4/) or other gases comprising H and Si, at elevated temperatures of about 1700 to 2300/sup 0/C, in a vacuum of about 10/sup -8/ to 10/sup -4/ torr. A gaseous mixture is formed of atomic hydrogen and atomic silicon. The gaseous mixture is deposited onto a substrate to form hydrogenated amorphous silicon.

Zero-reabsorption doped-nanocrystal luminescent solar concentrators.

Science.gov (United States)

Erickson, Christian S; Bradshaw, Liam R; McDowall, Stephen; Gilbertson, John D; Gamelin, Daniel R; Patrick, David L

2014-04-22

Optical concentration can lower the cost of solar energy conversion by reducing photovoltaic cell area and increasing photovoltaic efficiency. Luminescent solar concentrators offer an attractive approach to combined spectral and spatial concentration of both specular and diffuse light without tracking, but they have been plagued by luminophore self-absorption losses when employed on practical size scales. Here, we introduce doped semiconductor nanocrystals as a new class of phosphors for use in luminescent solar concentrators. In proof-of-concept experiments, visibly transparent, ultraviolet-selective luminescent solar concentrators have been prepared using colloidal Mn(2+)-doped ZnSe nanocrystals that show no luminescence reabsorption. Optical quantum efficiencies of 37% are measured, yielding a maximum projected energy concentration of ∼6× and flux gain for a-Si photovoltaics of 15.6 in the large-area limit, for the first time bounded not by luminophore self-absorption but by the transparency of the waveguide itself. Future directions in the use of colloidal doped nanocrystals as robust, processable spectrum-shifting phosphors for luminescent solar concentration on the large scales required for practical application of this technology are discussed.

Multi-mode interference revealed by two photon absorption in silicon rich SiO2 waveguides

International Nuclear Information System (INIS)

Manna, S.; Ramiro-Manzano, F.; Mancinelli, M.; Turri, F.; Pavesi, L.; Ghulinyan, M.; Pucker, G.

2015-01-01

Photoluminescence (PL) from Si nanocrystals (NCs) excited by two-photon absorption (TPA) has been observed in Si nanocrystal-based waveguides fabricated by plasma enhanced chemical vapor deposition. The TPA excited photoluminescence emission resembles the one-photon excited photoluminescence arising from inter-band transitions in the quantum confined Si nanocrystals. By measuring the non-linear transmission of waveguides, a large TPA coefficient of β up to 10 −8  cm/W has been measured at 1550 nm. These values of β depend on the Si NCs size and are two orders of magnitude larger than the bulk silicon value. Here, we propose to use the TPA excited visible PL emission as a tool to map the spatial intensity profile of the 1550 nm propagating optical modes in multimode waveguides. In this way, multimode interference has been revealed experimentally and confirmed through a finite element simulation

Eu-doped ZnO-HfO2 hybrid nanocrystal-embedded low-loss glass-ceramic waveguides

Science.gov (United States)

Ghosh, Subhabrata; N, Shivakiran Bhaktha B.

2016-03-01

We report on the sol-gel fabrication, using a dip-coating technique, of low-loss Eu-doped 70SiO2 -(30-x) HfO2-xZnO (x = 2, 5, 7 and 10 mol%) ternary glass-ceramic planar waveguides. Transmission electron microscopy and grazing incident x-ray diffraction experiments confirm the controlled growth of hybrid nanocrystals with an average size of 3 nm-25 nm, composed of ZnO encapsulated by a thin layer of nanocrystalline HfO2, with an increase of ZnO concentration from x = 2 mol% to 10 mol% in the SiO2-HfO2 composite matrix. The effect of crystallization on the local environment of Eu ions, doped in the ZnO-HfO2 hybrid nanocrystal-embedded glass-ceramic matrix, is studied using photoluminescence spectra, wherein an intense mixed-valence state (divalent as well as trivalent) emission of Eu ions is observed. The existence of Eu2+ and Eu3+ in the SiO2-HfO2-ZnO ternary matrix is confirmed by x-ray photoelectron spectroscopy. Importantly, the Eu{}2+,3+-doped ternary waveguides exhibit low propagation losses (0.3 ± 0.2 dB cm-1 at 632.8 nm) and optical transparency in the visible region of the electromagnetic spectrum, which makes ZnO-HfO2 nanocrystal-embedded SiO2-HfO2-ZnO waveguides a viable candidate for the development of on-chip, active, integrated optical devices.

The effect of oxide shell thickness on the structural, electronic, and optical properties of Si-SiO{sub 2} core-shell nano-crystals: A (time dependent)density functional theory study

Energy Technology Data Exchange (ETDEWEB)

Nazemi, Sanaz, E-mail: s.nazemi@ut.ac.ir, E-mail: pourfath@ut.ac.ir; Soleimani, Ebrahim Asl [School of Electrical and Computer Engineering, University of Tehran, Tehran 14395-515 (Iran, Islamic Republic of); Pourfath, Mahdi, E-mail: s.nazemi@ut.ac.ir, E-mail: pourfath@ut.ac.ir [School of Electrical and Computer Engineering, University of Tehran, Tehran 14395-515 (Iran, Islamic Republic of); Institute for Microelectronics, Technische Universität Wien, Wien A-1040 (Austria); Kosina, Hans [Institute for Microelectronics, Technische Universität Wien, Wien A-1040 (Austria)

2016-04-14

Due to their tunable properties, silicon nano-crystals (NC) are currently being investigated. Quantum confinement can generally be employed for size-dependent band-gap tuning at dimensions smaller than the Bohr radius (∼5 nm for silicon). At the nano-meter scale, however, increased surface-to-volume ratio makes the surface effects dominant. Specifically, in Si-SiO{sub 2} core-shell semiconductor NCs the interfacial transition layer causes peculiar electronic and optical properties, because of the co-existence of intermediate oxidation states of silicon (Si{sup n+}, n = 0–4). Due to the presence of the many factors involved, a comprehensive understanding of the optical properties of these NCs has not yet been achieved. In this work, Si-SiO{sub 2} NCs with a diameter of 1.1 nm and covered by amorphous oxide shells with thicknesses between 2.5 and 4.75 Å are comprehensively studied, employing density functional theory calculations. It is shown that with increased oxide shell thickness, the low-energy part of the optical transition spectrum of the NC is red shifted and attenuated. Moreover, the absorption coefficient is increased in the high-energy part of the spectrum which corresponds to SiO{sub 2} transitions. Structural examinations indicate a larger compressive stress on the central silicon cluster with a thicker oxide shell. Examination of the local density of states reveals the migration of frontier molecular orbitals from the oxide shell into the silicon core with the increase of silica shell thickness. The optical and electrical properties are explained through the analysis of the density of states and the spatial distribution of silicon sub-oxide species.

Systematic spatial and stoichiometric screening towards understanding the surface of ultrasmall oxygenated silicon nanocrystal

Science.gov (United States)

Niaz, Shanawer; Zdetsis, Aristides D.; Koukaras, Emmanuel N.; Gülseren, Oǧuz; Sadiq, Imran

2016-11-01

In most of the realistic ab initio and model calculations which have appeared on the emission of light from silicon nanocrystals, the role of surface oxygen has been usually ignored, underestimated or completely ruled out. We investigate theoretically, by density functional theory (DFT/B3LYP) possible modes of oxygen bonding in hydrogen terminated silicon quantum dots using as a representative case of the Si29 nanocrystal. We have considered Bridge-bonded oxygen (BBO), Doubly-bonded oxygen (DBO), hydroxyl (OH) and Mix of these oxidizing agents. Due to stoichiometry, all comparisons performed are unbiased with respect to composition whereas spatial distribution of oxygen species pointed out drastic change in electronic and cohesive characteristics of nanocrytals. From an overall perspective of this study, it is shown that bridge bonded oxygenated Si nanocrystals accompanied by Mix have higher binding energies and large electronic gap compared to nanocrystals with doubly bonded oxygen atoms. In addition, it is observed that the presence of OH along with BBO, DBO and mixed configurations further lowers electronic gaps and binding energies but trends in same fashion. It is also demonstrated that within same composition, oxidizing constituent, along with their spatial distribution substantially alters binding energy, highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) gap (up to 1.48 eV) and localization of frontier orbitals.

Annealing effect and photovoltaic properties of nano-ZnS/textured p-Si heterojunction

OpenAIRE

Ji, Liang-Wen; Hsiao, Yu-Jen; Tang, I-Tseng; Meen, Teen-Hang; Liu, Chien-Hung; Tsai, Jenn-Kai; Wu, Tien-Chuan; Wu, Yue-Sian

2013-01-01

The preparation and characterization of heterojunction solar cell with ZnS nanocrystals synthesized by chemical bath deposition method were studied in this work. The ZnS nanocrystals were characterized by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). Lower reflectance spectra were found as the annealing temperature of ZnS film increased on the textured p-Si substrate. It was found that the power conversion efficiency (PCE) of the AZO/ZnS/textured p-Si h...

Thermal stability of iron silicide nanowires epitaxially grown on Si(110) substrates

Energy Technology Data Exchange (ETDEWEB)

Zou, Zhi-Qiang, E-mail: zouzhq@shanghaitech.edu.cn [School of Physical Science and Technology, ShanghaiTech University, 100 Haike Road, Pudong, Shanghai, 201210 (China); Li, Xu; Liu, Xiao-Yong; Shi, Kai-Juan; Guo, Xin-Qiu [Analytical and Testing Center, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240 (China)

2017-03-31

Highlights: • The α-FeSi{sub 2} nanowires epitaxially grown on Si(110) can be stable up to 750 °C. • The stable temperature of the nanowires is much lower than that of the bulk α-FeSi{sub 2} due to their small size and high relative surface area. • With increasing annealing temperature, the α-FeSi{sub 2} nanowires undergo an Ostwald ripening process and transform into large β-FeSi{sub 2} nanorods or three-dimensional nanocrystals. • The reduction in surface energy drives the transformation from metallic α-FeSi{sub 2} phase to semiconducting β-FeSi{sub 2} phase. - Abstract: Metallic α-FeSi{sub 2} nanowires (NWs) are epitaxially grown on Si(110) at 650 °C. Their evolution as a function of annealing temperature has been studied in situ by scanning tunneling microscopy. The NWs are stable up to 750 °C, which is much lower than that of the bulk α-FeSi{sub 2}. With further increasing the annealing temperature, some NWs begin to shrink in length and transform into wider and higher semiconducting β-FeSi{sub 2} nanorods or three-dimensional (3D) islands at 925 °C. The phase transformation is driven by the reduction in surface energy. On the other hand, some α-FeSi{sub 2} NWs begin to dissolve and become thinner until disappearing. The growth of the β-FeSi{sub 2} nanorods or 3D nanocrystals follows the Ostwald ripening mechanism, i.e., the large islands grow in size at the expense of the small ones. X-ray photoelectron spectroscopy study shows that the Fe 2p peaks of β-FeSi{sub 2} nanocrystals exhibit a negative shift of 0.2 eV with respect to the α-FeSi{sub 2} NWs.

Mineral contents and their solubility on calcium carbonat calcite nanocrystals from cockle shell powder (Anadara granosa Linn)

Science.gov (United States)

Widyastuti, S.; Pramushinta, I. A.

2018-03-01

Prepared and characterized calcium carbonat calcite nanocrystals improves solubility. Calcium carbonat calcite nanocrystals were synthesized using precipitation method from the waste of blood clam cockle shells (Anadara granosa Linn). This study was conducted to analyze mineral composition of nanocrystals calcium carbonat calcite cockle (Anadara granosa) shell for calcium fortification of food applications and to evaluate the solubilities of Calsium and Phospor. The sample of nanocrystals from cockle shells was evaluated to determine the content of 11 macro-and micro-elements. These elements are Calcium (Ca), Magnesium (Mg), Sodium (Na), Phosphorus (P), Potassium (K), Ferrum (Fe), Copper (Cu), Nickel (Ni), Zink (Zn), Boron (B) and Silica (Si)). Cockleshell powders were found to contain toxic elements below detectable levels. The solubilities of Calcium and Phospor were p<0.05.

Intensely emitting CdTe nanocrystals retained initial photoluminescence efficiency in sol-gel derived Si{sub 1-x}Zr{sub x}O{sub 2} glass

Energy Technology Data Exchange (ETDEWEB)

Yang, P.; Murase, N. [National Institute of Advanced Industrial Science and Technology, Photonics Research Institute, Osaka (Japan)

2007-10-15

Emitting CdTe nanocrystals (NCs) were embedded in pure glass matrices (Si{sub 1-x}Zr{sub x}O{sub 2}, x{<=}0.15) using a controlled sol-gel method, where the pre-hydrolyzed condition, the molar ratio of Zr/Si, the gelation time, the pH, and the amount of alcohol were judiciously optimized considering the surface condition of the NCs and the mechanism of the glass formation. As a result, the prepared glass phosphor exhibited high photoluminescence efficiencies (40% for green and 60% for red when Zr/Si was 5-10%) by retaining their initial values as in CdTe colloidal solution. To our knowledge, these values are the highest among those ever obtained for any solid matrices containing NCs. Because of the existence of Zr, the prepared glasses exhibit much better resistance against the ambient atmosphere, heat-treatment, and boiling water compared with pure silica glass (x=0) or the glass prepared from our other methods using a silane coupling agent. Thus, the obtained glass is promising for applications such as optical devices. (orig.)

Impact of growth temperature on the crystal habits, forms and structures of VO2 nanocrystals

International Nuclear Information System (INIS)

Loeffler, Stefan; Auer, Erwin; Lugstein, Alois; Bertagnolli, Emmerich; Weil, Matthias

2011-01-01

We investigated the impact of the process temperature on the habits, forms and crystal structure of VO 2 nanocrystals grown by a vapor-transport method on (0001) quartz substrates. Four distinct growth regimes were discerned: orthorhombic nanowires, sheets, hemispheres, and nanowires with a monoclinic structure. The nanostructures were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), and transmission electron microscopy (TEM). I/V characterization of individual nanowires was enabled by Ti/Au contact formation via electron beam lithography and lift-off techniques. The expected metal-insulator transition (MIT) was found in monoclinic VO 2 nanowires. (orig.)

Systematic spatial and stoichiometric screening towards understanding the surface of ultrasmall oxygenated silicon nanocrystal

Energy Technology Data Exchange (ETDEWEB)

Niaz, Shanawer, E-mail: shanawersi@gmail.com [Department of Physics, Bilkent University, Ankara 06800 (Turkey); Molecular Engineering Laboratory, at the Department of Physics, University of Patras, Patras, GR-26500 (Greece); Zdetsis, Aristides D.; Koukaras, Emmanuel N. [Molecular Engineering Laboratory, at the Department of Physics, University of Patras, Patras, GR-26500 (Greece); Gülseren, Oǧuz [Department of Physics, Bilkent University, Ankara 06800 (Turkey); Sadiq, Imran [Centre of Excellence in Solid State Physics, University of the Punjab, Lahore (Pakistan)

2016-11-30

Highlights: • Understanding surface science of oxygenated silicon nanocrystals by means of their composition, stoichiometry and spatial distribution. • Drastic change observed in binding energy, localization of frontier orbitals and HOMO-LUMO gap up to 1.48 eV. • Might be a safe alternative of size dependent bandgap tunability. - Abstract: In most of the realistic ab initio and model calculations which have appeared on the emission of light from silicon nanocrystals, the role of surface oxygen has been usually ignored, underestimated or completely ruled out. We investigate theoretically, by density functional theory (DFT/B3LYP) possible modes of oxygen bonding in hydrogen terminated silicon quantum dots using as a representative case of the Si{sub 29} nanocrystal. We have considered Bridge-bonded oxygen (BBO), Doubly-bonded oxygen (DBO), hydroxyl (OH) and Mix of these oxidizing agents. Due to stoichiometry, all comparisons performed are unbiased with respect to composition whereas spatial distribution of oxygen species pointed out drastic change in electronic and cohesive characteristics of nanocrytals. From an overall perspective of this study, it is shown that bridge bonded oxygenated Si nanocrystals accompanied by Mix have higher binding energies and large electronic gap compared to nanocrystals with doubly bonded oxygen atoms. In addition, it is observed that the presence of OH along with BBO, DBO and mixed configurations further lowers electronic gaps and binding energies but trends in same fashion. It is also demonstrated that within same composition, oxidizing constituent, along with their spatial distribution substantially alters binding energy, highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) gap (up to 1.48 eV) and localization of frontier orbitals.

Systematic spatial and stoichiometric screening towards understanding the surface of ultrasmall oxygenated silicon nanocrystal

International Nuclear Information System (INIS)

Niaz, Shanawer; Zdetsis, Aristides D.; Koukaras, Emmanuel N.; Gülseren, Oǧuz; Sadiq, Imran

2016-01-01

Highlights: • Understanding surface science of oxygenated silicon nanocrystals by means of their composition, stoichiometry and spatial distribution. • Drastic change observed in binding energy, localization of frontier orbitals and HOMO-LUMO gap up to 1.48 eV. • Might be a safe alternative of size dependent bandgap tunability. - Abstract: In most of the realistic ab initio and model calculations which have appeared on the emission of light from silicon nanocrystals, the role of surface oxygen has been usually ignored, underestimated or completely ruled out. We investigate theoretically, by density functional theory (DFT/B3LYP) possible modes of oxygen bonding in hydrogen terminated silicon quantum dots using as a representative case of the Si 29 nanocrystal. We have considered Bridge-bonded oxygen (BBO), Doubly-bonded oxygen (DBO), hydroxyl (OH) and Mix of these oxidizing agents. Due to stoichiometry, all comparisons performed are unbiased with respect to composition whereas spatial distribution of oxygen species pointed out drastic change in electronic and cohesive characteristics of nanocrytals. From an overall perspective of this study, it is shown that bridge bonded oxygenated Si nanocrystals accompanied by Mix have higher binding energies and large electronic gap compared to nanocrystals with doubly bonded oxygen atoms. In addition, it is observed that the presence of OH along with BBO, DBO and mixed configurations further lowers electronic gaps and binding energies but trends in same fashion. It is also demonstrated that within same composition, oxidizing constituent, along with their spatial distribution substantially alters binding energy, highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) gap (up to 1.48 eV) and localization of frontier orbitals.

A novel one-pot room-temperature synthesis route to produce very small photoluminescent silicon nanocrystals

Science.gov (United States)

Douglas-Gallardo, Oscar A.; Burgos-Paci, Maxi A.; Mendoza-Cruz, Rubén; Putnam, Karl G.; Josefina Arellano-Jiménez, M.; José-Yacamán, Miguel; Mariscal, Marcelo M.; Macagno, Vicente A.; Sánchez, Cristián G.; Pérez, Manuel A.

2018-03-01

A novel strategy to synthesize photoluminescent silicon nanocrystals (SiNCs) from a reaction between tetraethylorthosilicate (TEOS) and trimethyl-hexadecyl-ammonium borohydride (CTABH4) in organic solvent is presented. The formation reaction occurs spontaneously at room temperature in homogeneous phase. The produced silicon nanocrystals are characterized by using their photoluminescent properties and via HRTEM. In addition, theoretical calculations of the optical absorption spectrum of silicon quantum dots in vacuum with different sizes and surface moieties were performed in order to compare with the experimental findings. The new chemical reaction is simple and can be implemented to produce silicon nanocrystal with regular laboratory materials by performing easy and safe procedures. [Figure not available: see fulltext.

Nanocrystal quantum dots

CERN Document Server

Klimov, Victor I

2010-01-01

""Soft"" Chemical Synthesis and Manipulation of Semiconductor Nanocrystals, J.A. Hollingsworth and V.I. Klimov Electronic Structure in Semiconductor Nanocrystals: Optical Experiment, D.J. NorrisFine Structure and Polarization Properties of Band-Edge Excitons in Semiconductor Nanocrystals, A.L. EfrosIntraband Spectroscopy and Dynamics of Colloidal Semiconductor Quantum Dots, P. Guyot-Sionnest, M. Shim, and C. WangMultiexciton Phenomena in Semiconductor Nanocrystals, V.I. KlimovOptical Dynamics in Single Semiconductor Quantum Do

Structure and Spatial Distribution of Ge Nanocrystals Subjected to Fast Neutron Irradiation

Directory of Open Access Journals (Sweden)

Alexander N. Ionov

2011-07-01

Full Text Available The influence of fast neutron irradiation on the structure and spatial distribution of Ge nanocrystals (NC embedded in an amorphous SiO2 matrix has been studied. The investigation was conducted by means of laser Raman Scattering (RS, High Resolution Transmission Electron Microscopy (HR-TEM and X-ray photoelectron spectroscopy (XPS. The irradiation of Ge- NC samples by a high dose of fast neutrons lead to a partial destruction of the nanocrystals. Full reconstruction of crystallinity was achieved after annealing the radiation damage at 8000C, which resulted in full restoration of the RS spectrum. HR-TEM images show, however, that the spatial distributions of Ge-NC changed as a result of irradiation and annealing. A sharp decrease in NC distribution towards the SiO2 surface has been observed. This was accompanied by XPS detection of Ge oxides and elemental Ge within both the surface and subsurface region.

Advanced Branching Control and Characterization of Inorganic Semiconducting Nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Hughes, Steven Michael [Univ. of California, Berkeley, CA (United States)

2007-01-01

The ability to finely tune the size and shape of inorganic semiconducting nanocrystals is an area of great interest, as the more control one has, the more applications will be possible for their use. The first two basic shapes develped in nanocrystals were the sphere and the anistropic nanorod. the II_VI materials being used such as Cadmium Selenide (CdSe) and Cadmium Telluride (CdTe), exhibit polytypism, which allows them to form in either the hexagonally packed wurtzite or cubically packed zinc blende crystalline phase. The nanorods are wurtzite with the length of the rod growing along the c-axis. As this grows, stacking faults may form, which are layers of zinc blende in the otherwise wurtzite crystal. Using this polytypism, though, the first generation of branched crystals were developed in the form of the CdTe tetrapod. This is a nanocrystal that nucleates in the zincblend form, creating a tetrahedral core, on which four wurtzite arms are grown. This structure opened up the possibility of even more complex shapes and applications. This disseration investigates the advancement of branching control and further understanding the materials polytypism in the form of the stacking faults in nanorods.

Linear electro-optical behavior of hybrid nanocomposites based on silicon carbide nanocrystals and polymer matrices

Science.gov (United States)

Bouclé, J.; Kassiba, A.; Makowska-Janusik, M.; Herlin-Boime, N.; Reynaud, C.; Desert, A.; Emery, J.; Bulou, A.; Sanetra, J.; Pud, A. A.; Kodjikian, S.

2006-11-01

An electro-optical activity has been recently reported for hybrid nanocomposite thin films where inorganic silicon carbide nanocrystals (ncSiC) are incorporated into polymer matrices. The role of the interface SiC polymer is suggested as the origin of the observed second order nonlinear optical susceptibility in the hybrid materials based on poly-(methylmethacrylate) (PMMA) or poly-( N -vinylcarbazole) matrices. In this work, we report an analysis of the electro-optical response of this hybrid system as a function of the ncSiC content and surface state in order to precise the interface effect in the observed phenomenon. Two specific ncSiC samples with similar morphology and different surface states are incorporated in the PMMA matrix. The effective Pockels parameters of the corresponding hybrid nanocomposites have been estimated up to 7.59±0.74pm/V ( 1wt.% of ncSiC in the matrix). The interfacial region ncSiC polymer is found to play the main role in the observed effect. Particularly, the electronic defects on the ncSiC nanocrystal surface modify the interfacial electrical interactions between the two components. The results are interpreted and discussed on the basis of the strong influence of these active centers in the interfacial region at the nanoscale, which are found to monitor the local hyperpolarizabilities and the macroscopic nonlinear optical susceptibilities. This approach allows us to complete the description and understanding of the electro-optical response in the hybrid SiC /polymer systems.

Chemically etched sharpened tip of transparent crystallized glass fibers with nonlinear optical Ba2TiSi2O8 nanocrystals

International Nuclear Information System (INIS)

Enomoto, Itaru; Benino, Yasuhiko; Komatsu, Takayuki; Fujiwara, Takumi

2007-01-01

Glass fibers with a diameter of ∼100 μm are drawn by just pulling up melts of 40BaO·20TiO 2 ·40SiO 2 glass, and transparent crystallized glass fibers consisting of nonlinear optical fresnoite Ba 2 TiSi 2 O 8 nanocrystals (particle size: ∼100-200 nm) are fabricated by crystallization of glass fibers. Precursor glass fibers and nanocrystallized glass fibers are etched chemically using a meniscus method, in which an etching solution of 0.1wt%-HF/hexane is used. Glass fibers with sharpened tips (e.g., the taper length is ∼L=200 μm and the tip angle is ∼θ=23deg) are obtained. It is found that etched nanocrystallized glass fibers also have sharpened tips (L=50 μm, θ=80deg). Compared with precursor glass fibers, nanocrystallized glass fibers show a high resistance against chemical etching in a 0.1 wt%HF solution. Although sharpened tips in nanocrystallized glass fibers do not have nanoscaled apertures, the present study suggests that nanocrystallized glass fibers showing second harmonic generations would have a potential for fiber-type light control optical devices. (author)

Structural, optical and electrical properties of silicon nanocrystals embedded in SixC1−x/SiC multilayer systems for photovoltaic applications

International Nuclear Information System (INIS)

López-Vidrier, J.; Hernández, S.; Samà, J.; Canino, M.; Allegrezza, M.; Bellettato, M.; Shukla, R.; Schnabel, M.; Löper, P.; López-Conesa, L.; Estradé, S.; Peiró, F.; Janz, S.; Garrido, B.

2013-01-01

Highlights: ► We study the structural, optical and electrical properties of Si x C 1−x /SiC multilayers with different Si excess. ► Multilayer structure is destroyed after annealing at 1100 °C. ► Energy filtered TEM confirmed the Si NC formation. ► Sample thickness values from optical simulations are in agreement with TEM observations. ► The crystallization degree of the NCs was evaluated by Raman scattering and R and T techniques. ► The system conductivity depends on the NC size. ► The presence of a defective oxycarbide layer on top did not allow for obtaining useful electrical information. -- Abstract: In this work we present a structural, optical and electrical characterization of Si x C 1−x /SiC multilayer systems with different silicon content. After the deposition process, an annealing treatment was carried out in order to induce the silicon nanocrystals formation. By means of energy-filtered transmission electron microscopy (EFTEM) we observed the structural morphology of the multilayers and the presence of crystallized silicon nanoprecipitates for samples annealed up to 1100 °C. We discuss the suitability of optical techniques such as Raman scattering and reflectance and transmittance (R and T) for the evaluation of the crystalline fraction of our samples at different silicon excess ranges. In addition, the combination of R and T measurements with simulation has proved to be a useful instrument to confirm the structural properties observed by EFTEM. Finally, we explore the origin of the extremely high current density revealed by electrical measurements, probably due to the presence of an undesired defective SiC y O z ternary compound layer, already supported by the structural and optical results. Nevertheless, the variation of the electrical measurements with the silicon amount indicates a small but significant contribution from the multilayers

Optical properties of transparent Li2O-Ga2O3-SiO2 glass-ceramics embedding Ni-doped nanocrystals

International Nuclear Information System (INIS)

Suzuki, Takenobu; Murugan, Ganapathy Senthil; Ohishi, Yasutake

2005-01-01

Transparent Li 2 O-Ga 2 O 3 -SiO 2 (LGS) glass-ceramics embedding Ni:LiGa 5 O 8 nanocrystals were fabricated. An intense emission centered around 1300 nm with the width of more than 300 nm was observed by 976 nm photoexcitation of the glass-ceramics. The lifetime was more than 900 μs at 5 K and 500 μs at 300 K. The emission could be attributed to the 3 T 2g ( 3 F)→ 3 A 2g ( 3 F) transition of Ni 2+ in distorted octahedral sites in LiGa 5 O 8 . The product of stimulated emission cross section and lifetime for the emission was about 3.7x10 -24 cm 2 s and was a sufficiently practical value

Photo-sensitive Ge nanocrystal based films controlled by substrate deposition temperature

Science.gov (United States)

Stavarache, Ionel; Maraloiu, Valentin Adrian; Negrila, Catalin; Prepelita, Petronela; Gruia, Ion; Iordache, Gheorghe

2017-10-01

Lowering the temperature of crystallization by deposition of thin films on a heated substrate represents the easiest way to find new means to develop and improve new working devices based on nanocrystals embedded in thin films. The improvements are strongly related with the increasing of operation speed, substantially decreasing the energy consumption and reducing unit fabrication costs of the respective semiconductor devices. This approach avoids major problems, such as those related to diffusion or difficulties in controlling nanocrystallites size, which appear during thermal treatments at high temperatures after deposition. This article reports on a significant progress given by structuring Ge nanocrystals (Ge-NCs) embedded in silicon dioxide (SiO2) thin films by heating the substrate at 400 °C during co-deposition of Ge and SiO2 by magnetron sputtering. As a proof-of-concept, a Si/Ge-NCs:SiO2 photo-sensitive structure was fabricated thereof and characterized. The structure shows superior performance on broad operation bandwidth from visible to near-infrared, as strong rectification properties in dark, significant current rise in the inversion mode when illuminated, high responsivity, high photo-detectivity of 1014 Jones, quick response and significant conversion efficiency with peak value reaching 850% at -1 V and about 1000 nm. This simple preparation approach brings an important contribution to the effort of structuring Ge nanocrystallites in SiO2 thin films at a lower temperature for the purpose of using these materials for devices in optoelectronics, solar cells and electronics on flexible substrates.

Diazonium salts as grafting agents and efficient radical-hydrosilylation initiators for freestanding photoluminescent silicon nanocrystals.

Science.gov (United States)

Höhlein, Ignaz M D; Kehrle, Julian; Helbich, Tobias; Yang, Zhenyu; Veinot, Jonathan G C; Rieger, Bernhard

2014-04-07

The reactivity of diazonium salts towards freestanding, photoluminescent silicon nanocrystals (SiNCs) is reported. It was found that SiNCs can be functionalized with aryl groups by direct reductive grafting of the diazonium salts. Furthermore, diazonium salts are efficient radical initiators for SiNC hydrosilylation. For this purpose, novel electron-deficient diazonium salts, highly soluble in nonpolar solvents were synthesized. The SiNCs were functionalized with a variety of alkenes and alkynes at room temperature with short reaction times. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thermal conductivity of silicon nanocrystals and polystyrene nanocomposite thin films

International Nuclear Information System (INIS)

Juangsa, Firman Bagja; Muroya, Yoshiki; Nozaki, Tomohiro; Ryu, Meguya; Morikawa, Junko

2016-01-01

Silicon nanocrystals (SiNCs) are well known for their size-dependent optical and electronic properties; they also have the potential for low yet controllable thermal properties. As a silicon-based low-thermal conductivity material is required in microdevice applications, SiNCs can be utilized for thermal insulation. In this paper, SiNCs and polymer nanocomposites were produced, and their thermal conductivity, including the density and specific heat, was measured. Measurement results were compared with thermal conductivity models for composite materials, and the comparison shows a decreasing value of the thermal conductivity, indicating the effect of the size and presence of the nanostructure on the thermal conductivity. Moreover, employing silicon inks at room temperature during the fabrication process enables a low cost of fabrication and preserves the unique properties of SiNCs. (paper)

Fundamental absorption edge of NiO nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Sokolov, V.I., E-mail: visokolov@imp.uran.ru [Institute of Metal Physics, Ural Branch of RAS, S. Kovalevskaya Street 18, 620990 Yekaterinburg (Russian Federation); Druzhinin, A.V. [Institute of Metal Physics, Ural Branch of RAS, S. Kovalevskaya Street 18, 620990 Yekaterinburg (Russian Federation); Kim, G.A. [Institute of Organic Synthesis Ural Branch of RAS, S. Kovalevskaya Street 20, 620990 Yekaterinburg (Russian Federation); Gruzdev, N.B.; Yermakov, A.Ye.; Uimin, M.A.; Byzov, I.V.; Shchegoleva, N.N.; Vykhodets, V.B.; Kurennykh, T.E. [Institute of Metal Physics, Ural Branch of RAS, S. Kovalevskaya Street 18, 620990 Yekaterinburg (Russian Federation)

2013-12-01

NiO nanocrystals with the average size of 5, 10 and 25 nm were synthesized by gas-condensation method. The well-defined increase of the optical density D near the fundamental absorption edge of NiO nanocrystals in the range of 3.5–4.0 eV observed after the annealing in air is caused by the oxygen content growth. It is the direct experimental evidence of the fact that p—d charge transfer transitions form the fundamental absorption edge.

Fundamental absorption edge of NiO nanocrystals

International Nuclear Information System (INIS)

Sokolov, V.I.; Druzhinin, A.V.; Kim, G.A.; Gruzdev, N.B.; Yermakov, A.Ye.; Uimin, M.A.; Byzov, I.V.; Shchegoleva, N.N.; Vykhodets, V.B.; Kurennykh, T.E.

2013-01-01

NiO nanocrystals with the average size of 5, 10 and 25 nm were synthesized by gas-condensation method. The well-defined increase of the optical density D near the fundamental absorption edge of NiO nanocrystals in the range of 3.5–4.0 eV observed after the annealing in air is caused by the oxygen content growth. It is the direct experimental evidence of the fact that p—d charge transfer transitions form the fundamental absorption edge

Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals.

Science.gov (United States)

Diroll, Benjamin T; Schramke, Katelyn S; Guo, Peijun; Kortshagen, Uwe R; Schaller, Richard D

2017-10-11

Dynamic optical control of infrared (IR) transparency and refractive index is achieved using boron-doped silicon nanocrystals excited with mid-IR optical pulses. Unlike previous silicon-based optical switches, large changes in transmittance are achieved without a fabricated structure by exploiting strong light coupling of the localized surface plasmon resonance (LSPR) produced from free holes of p-type silicon nanocrystals. The choice of optical excitation wavelength allows for selectivity between hole heating and carrier generation through intraband or interband photoexcitation, respectively. Mid-IR optical pumping heats the free holes of p-Si nanocrystals to effective temperatures greater than 3500 K. Increases of the hole effective mass at high effective hole temperatures lead to a subpicosecond change of the dielectric function, resulting in a redshift of the LSPR, modulating mid-IR transmission by as much as 27%, and increasing the index of refraction by more than 0.1 in the mid-IR. Low hole heat capacity dictates subpicosecond hole cooling, substantially faster than carrier recombination, and negligible heating of the Si lattice, permitting mid-IR optical switching at terahertz repetition frequencies. Further, the energetic distribution of holes at high effective temperatures partially reverses the Burstein-Moss effect, permitting the modulation of transmittance at telecommunications wavelengths. The results presented here show that doped silicon, particularly in micro- or nanostructures, is a promising dynamic metamaterial for ultrafast IR photonics.

Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Banerjee, W.; Maikap, S. [Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan 333, Taiwan (China); Tien, T.-C. [Material Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, Taiwan (China); Li, W.-C.; Yang, J.-R. [Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan (China)

2011-10-01

The impact of iridium-oxide (IrO{sub x}) nano layer thickness on the tunneling oxide and memory performance of IrO{sub x} metal nanocrystals in an n-Si/SiO{sub 2}/Al{sub 2}O{sub 3}/IrO{sub x}/Al{sub 2}O{sub 3}/IrO{sub x} structure has been investigated. A thinner (1.5 nm) IrO{sub x} nano layer has shown better memory performance than that of a thicker one (2.5 nm). Core-shell IrO{sub x} nanocrystals with a small average diameter of 2.4 nm and a high density of {approx}2 x 10{sup 12}/cm{sup 2} have been observed by scanning transmission electron microscopy. The IrO{sub x} nanocrystals are confirmed by x-ray photoelectron spectroscopy. A large memory window of 3.0 V at a sweeping gate voltage of {+-}5 V and 7.2 V at a sweeping gate voltage of {+-} 8 V has been observed for the 1.5 nm-thick IrO{sub x} nano layer memory capacitors with a small equivalent oxide thickness of 8 nm. The electrons and holes are trapped in the core and annular regions of the IrO{sub x} nanocrystals, respectively, which is explained by Gibbs free energy. High electron and hole-trapping densities are found to be 1.5 x 10{sup 13}/cm{sup 2} and 2 x 10{sup 13}/cm{sup 2}, respectively, due to the small size and high-density of IrO{sub x} nanocrystals. Excellent program/erase endurance of >10{sup 6} cycles and good retention of 10{sup 4} s with a good memory window of >1.2 V under a small operation voltage of {+-} 5 V are obtained. A large memory size of >10 Tbit/sq. in. can be designed by using the IrO{sub x} nanocrystals. This study is not only important for the IrO{sub x} nanocrystal charge-trapping memory investigation but it will also help to design future metal nanocrystal flash memory.

Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals

International Nuclear Information System (INIS)

Banerjee, W.; Maikap, S.; Tien, T.-C.; Li, W.-C.; Yang, J.-R.

2011-01-01

The impact of iridium-oxide (IrO x ) nano layer thickness on the tunneling oxide and memory performance of IrO x metal nanocrystals in an n-Si/SiO 2 /Al 2 O 3 /IrO x /Al 2 O 3 /IrO x structure has been investigated. A thinner (1.5 nm) IrO x nano layer has shown better memory performance than that of a thicker one (2.5 nm). Core-shell IrO x nanocrystals with a small average diameter of 2.4 nm and a high density of ∼2 x 10 12 /cm 2 have been observed by scanning transmission electron microscopy. The IrO x nanocrystals are confirmed by x-ray photoelectron spectroscopy. A large memory window of 3.0 V at a sweeping gate voltage of ±5 V and 7.2 V at a sweeping gate voltage of ± 8 V has been observed for the 1.5 nm-thick IrO x nano layer memory capacitors with a small equivalent oxide thickness of 8 nm. The electrons and holes are trapped in the core and annular regions of the IrO x nanocrystals, respectively, which is explained by Gibbs free energy. High electron and hole-trapping densities are found to be 1.5 x 10 13 /cm 2 and 2 x 10 13 /cm 2 , respectively, due to the small size and high-density of IrO x nanocrystals. Excellent program/erase endurance of >10 6 cycles and good retention of 10 4 s with a good memory window of >1.2 V under a small operation voltage of ± 5 V are obtained. A large memory size of >10 Tbit/sq. in. can be designed by using the IrO x nanocrystals. This study is not only important for the IrO x nanocrystal charge-trapping memory investigation but it will also help to design future metal nanocrystal flash memory.

Annealing effect and photovoltaic properties of nano-ZnS/textured p-Si heterojunction

Science.gov (United States)

Ji, Liang-Wen; Hsiao, Yu-Jen; Tang, I.-Tseng; Meen, Teen-Hang; Liu, Chien-Hung; Tsai, Jenn-Kai; Wu, Tien-Chuan; Wu, Yue-Sian

2013-11-01

The preparation and characterization of heterojunction solar cell with ZnS nanocrystals synthesized by chemical bath deposition method were studied in this work. The ZnS nanocrystals were characterized by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). Lower reflectance spectra were found as the annealing temperature of ZnS film increased on the textured p-Si substrate. It was found that the power conversion efficiency (PCE) of the AZO/ZnS/textured p-Si heterojunction solar cell with an annealing temperature of 250°C was η = 3.66%.

Additive-assisted synthesis of boride, carbide, and nitride micro/nanocrystals

International Nuclear Information System (INIS)

Chen, Bo; Yang, Lishan; Heng, Hua; Chen, Jingzhong; Zhang, Linfei; Xu, Liqiang; Qian, Yitai; Yang, Jian

2012-01-01

General and simple methods for the syntheses of borides, carbides and nitrides are highly desirable, since those materials have unique physical properties and promising applications. Here, a series of boride (TiB 2 , ZrB 2 , NbB 2 , CeB 6 , PrB 6 , SmB 6 , EuB 6 , LaB 6 ), carbide (SiC, TiC, NbC, WC) and nitride (TiN, BN, AlN, MgSiN 2 , VN) micro/nanocrystals were prepared from related oxides and amorphous boron/active carbon/NaN 3 with the assistance of metallic Na and elemental S. In-situ temperature monitoring showed that the reaction temperature could increase quickly to ∼850 °C, once the autoclave was heated to 100 °C. Such a rapid temperature increase was attributed to the intense exothermic reaction between Na and S, which assisted the formation of borides, carbides and nitrides. The as-obtained products were characterized by XRD, SEM, TEM, and HRTEM techniques. Results in this report will greatly benefit the future extension of this approach to other compounds. - Graphical abstract: An additive-assisted approach is successfully developed for the syntheses of borides, carbides and nitrides micro/nanocrystals with the assistance of the exothermic reaction between Na and S. Highlights: ► An additive-assisted synthesis strategy is developed for a number of borides, carbides and nitrides. ► The reaction mechanism is demonstrated by the case of SiC nanowires. ► The formation of SiC nanowires is initiated by the exothermic reaction of Na and S.

Doping in silicon nanocrystals: An ab initio study of the structural, electronic and optical properties

International Nuclear Information System (INIS)

Iori, Federico; Degoli, Elena; Luppi, Eleonora; Magri, Rita; Marri, Ivan; Cantele, G.; Ninno, D.; Trani, F.; Ossicini, Stefano

2006-01-01

There are experimental evidences that doping control at the nanoscale can significantly modify the optical properties with respect to the pure systems. This is the case of silicon nanocrystals (Si-nc), for which it has been shown that the photoluminescence (PL) peak can be tuned also below the bulk Si band gap by properly controlling the impurities, for example by boron (B) and phosphorus (P) codoping. In this work, we report on an ab initio study of impurity states in Si-nc. We consider B and P substitutional impurities for Si-nc with a diameter up to 2.2 nm. Formation energies (FEs), electronic, optical and structural properties have been determined as a function of the cluster dimension. For both B-doped and P-doped Si-nc the FE increases on decreasing the dimension, showing that the substitutional doping gets progressively more difficult for the smaller nanocrystals. Moreover, subsurface impurity positions result to be the most stable ones. The codoping reduces the FE strongly favoring this process with respect to the simple n-doping or p-doping. Such an effect can be attributed to charge compensation between the donor and the acceptor atoms. Moreover, smaller structural deformations, with respect to n-doped and p-doped cases, localized only around the impurity sites are observed. The band gap and the optical threshold are largely reduced with respect to the undoped Si-nc showing the possibility of an impurity-based engineering of the Si-nc PL properties

Nanocrystal Bioassembly: Asymmetry, Proximity, and Enzymatic Manipulation

Energy Technology Data Exchange (ETDEWEB)

Claridge, Shelley A. [Univ. of California, Berkeley, CA (United States)

2008-05-01

Research at the interface between biomolecules and inorganic nanocrystals has resulted in a great number of new discoveries. In part this arises from the synergistic duality of the system: biomolecules may act as self-assembly agents for organizing inorganic nanocrystals into functional materials; alternatively, nanocrystals may act as microscopic or spectroscopic labels for elucidating the behavior of complex biomolecular systems. However, success in either of these functions relies heavily uponthe ability to control the conjugation and assembly processes.In the work presented here, we first design a branched DNA scaffold which allows hybridization of DNA-nanocrystal monoconjugates to form discrete assemblies. Importantly, the asymmetry of the branched scaffold allows the formation of asymmetric2assemblies of nanocrystals. In the context of a self-assembled device, this can be considered a step toward the ability to engineer functionally distinct inputs and outputs.Next we develop an anion-exchange high performance liquid chromatography purification method which allows large gold nanocrystals attached to single strands of very short DNA to be purified. When two such complementary conjugates are hybridized, the large nanocrystals are brought into close proximity, allowing their plasmon resonances to couple. Such plasmon-coupled constructs are of interest both as optical interconnects for nanoscale devices and as `plasmon ruler? biomolecular probes.We then present an enzymatic ligation strategy for creating multi-nanoparticle building blocks for self-assembly. In constructing a nanoscale device, such a strategy would allow pre-assembly and purification of components; these constructs can also act as multi-label probes of single-stranded DNA conformational dynamics. Finally we demonstrate a simple proof-of-concept of a nanoparticle analog of the polymerase chain reaction.

Crystallization and Growth of Colloidal Nanocrystals

CERN Document Server

Leite, Edson Roberto

2012-01-01

Since the size, shape, and microstructure of nanocrystalline materials strongly impact physical and chemical properties, the development of new synthetic routes to  nanocrystals with controlled composition and morphology is a key objective of the nanomaterials community. This objective is dependent on control of the nucleation and growth mechanisms that occur during the synthetic process, which in turn requires a fundamental understanding of both classical nucleation and growth and non-classical growth processes in nanostructured materials.  Recently, a novel growth process called Oriented Attachment (OA) was identified which appears to be a fundamental mechanism during the development of nanoscale  materials. OA is a special case of aggregation that provides an important route by which nanocrystals grow, defects are formed, and unique—often symmetry-defying—crystal morphologies can be produced. This growth mechanism involves reversible self-assembly of primary nanocrystals followed by reorientati...

Graphene enhanced field emission from InP nanocrystals.

Science.gov (United States)

Iemmo, L; Di Bartolomeo, A; Giubileo, F; Luongo, G; Passacantando, M; Niu, G; Hatami, F; Skibitzki, O; Schroeder, T

2017-12-08

We report the observation of field emission (FE) from InP nanocrystals (NCs) epitaxially grown on an array of p-Si nanotips. We prove that FE can be enhanced by covering the InP NCs with graphene. The measurements are performed inside a scanning electron microscope chamber with a nano-controlled W-thread used as an anode. We analyze the FE by Fowler-Nordheim theory and find that the field enhancement factor increases monotonically with the spacing between the anode and the cathode. We also show that InP/p-Si junction has a rectifying behavior, while graphene on InP creates an ohmic contact. Understanding the fundamentals of such nanojunctions is key for applications in nanoelectronics.

Plasma spray formed near-net-shape MoSi2-Si3N4 bulk nanocomposites-structure property evaluation

International Nuclear Information System (INIS)

Hong, S.J.; Viswanathan, V.; Rea, K.; Patil, S.; Deshpande, S.; Georgieva, P.; McKechnie, T.; Seal, S.

2005-01-01

This article, for the first time, presents the challenges toward the successful consolidation of near-net-shape bulk MoSi 2 -Si 3 N 4 -SiC nanocomposite using plasma spray forming. A detailed characterization of the spray formed bulk nanocomponent has been performed using optical microscopy (OM), scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM), and Vickers hardness testing. Vickers hardness (900 Hv) and fracture toughness (∼>5 MPa m 1/2 ) of the nanocomposite showed a little deviation from the expected, which might be due to the difference in the particle (Si 3 N 4 ) size and their distribution in the MoSi 2 matrix as a function of component thickness. Relatively higher hardness is attributed to the retention of the nanostructure in the composite. In addition, the as fabricated bulk nanocomposite showed enhanced oxidation resistance

Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors.

Science.gov (United States)

Kim, David K; Lai, Yuming; Diroll, Benjamin T; Murray, Christopher B; Kagan, Cherie R

2012-01-01

Colloidal semiconductor nanocrystals are emerging as a new class of solution-processable materials for low-cost, flexible, thin-film electronics. Although these colloidal inks have been shown to form single, thin-film field-effect transistors with impressive characteristics, the use of multiple high-performance nanocrystal field-effect transistors in large-area integrated circuits has not been shown. This is needed to understand and demonstrate the applicability of these discrete nanocrystal field-effect transistors for advanced electronic technologies. Here we report solution-deposited nanocrystal integrated circuits, showing nanocrystal integrated circuit inverters, amplifiers and ring oscillators, constructed from high-performance, low-voltage, low-hysteresis CdSe nanocrystal field-effect transistors with electron mobilities of up to 22 cm(2) V(-1) s(-1), current modulation >10(6) and subthreshold swing of 0.28 V dec(-1). We fabricated the nanocrystal field-effect transistors and nanocrystal integrated circuits from colloidal inks on flexible plastic substrates and scaled the devices to operate at low voltages. We demonstrate that colloidal nanocrystal field-effect transistors can be used as building blocks to construct complex integrated circuits, promising a viable material for low-cost, flexible, large-area electronics.

Enhancing Hydrogen Diffusion in Silica Matrix by Using Metal Ion Implantation to Improve the Emission Properties of Silicon Nanocrystals

Directory of Open Access Journals (Sweden)

J. Bornacelli

2014-01-01

Full Text Available Efficient silicon-based light emitters continue to be a challenge. A great effort has been made in photonics to modify silicon in order to enhance its light emission properties. In this aspect silicon nanocrystals (Si-NCs have become the main building block of silicon photonic (modulators, waveguide, source, and detectors. In this work, we present an approach based on implantation of Ag (or Au ions and a proper thermal annealing in order to improve the photoluminescence (PL emission of Si-NCs embedded in SiO2. The Si-NCs are obtained by ion implantation at MeV energy and nucleated at high depth into the silica matrix (1-2 μm under surface. Once Si-NCs are formed inside the SiO2 we implant metal ions at energies that do not damage the Si-NCs. We have observed by, PL and time-resolved PL, that ion metal implantation and a subsequent thermal annealing in a hydrogen-containing atmosphere could significantly increase the emission properties of Si-NCs. Elastic Recoil Detection measurements show that the samples with an enhanced luminescence emission present a higher hydrogen concentration. This suggests that ion metal implantation enhances the hydrogen diffusion into silica matrix allowing a better passivation of surface defects on Si NCs.

Designing new biocompatible glass-forming Ti75-x Zr10 Nbx Si15 (x = 0, 15) alloys: corrosion, passivity, and apatite formation.

Science.gov (United States)

Abdi, Somayeh; Oswald, Steffen; Gostin, Petre Flaviu; Helth, Arne; Sort, Jordi; Baró, Maria Dolors; Calin, Mariana; Schultz, Ludwig; Eckert, Jürgen; Gebert, Annett

2016-01-01

Glass-forming Ti-based alloys are considered as potential new materials for implant applications. Ti75 Zr10 Si15 and Ti60 Zr10 Nb15 Si15 alloys (free of cytotoxic elements) can be produced as melt-spun ribbons with glassy matrix and embedded single β-type nanocrystals. The corrosion and passivation behavior of these alloys in their homogenized melt-spun states have been investigated in Ringer solution at 37°C in comparison to their cast multiphase crystalline counterparts and to cp-Ti and β-type Ti-40Nb. All tested materials showed very low corrosion rates as expressed in corrosion current densities icorr  alloys passive states in a wide potential range. This corresponds to low passive current densities ipass  = 2 ± 1 µA/cm(2) based on the growth of oxide films with thickness d alloys is beneficial for stable surface passivity. The addition of Nb does not only improve the glass-forming ability and the mechanical properties but also supports a high pitting resistance even at extreme anodic polarization up to 4V versus SCE were oxide thickness values of d ∼35 nm are reached. With regard to the corrosion properties, the Nb-containing nearly single-phase glassy alloy can compete with the β-type Ti-40Nb alloy. SBF tests confirmed the ability for formation of hydroxyapatite on the melt-spun alloy surfaces. All these properties recommend the new glass-forming alloys for application as wear- and corrosion-resistant coating materials for implants. © 2015 Wiley Periodicals, Inc.

Inhibition of palm oil oxidation by zeolite nanocrystals.

Science.gov (United States)

Tan, Kok-Hou; Awala, Hussein; Mukti, Rino R; Wong, Ka-Lun; Rigaud, Baptiste; Ling, Tau Chuan; Aleksandrov, Hristiyan A; Koleva, Iskra Z; Vayssilov, Georgi N; Mintova, Svetlana; Ng, Eng-Poh

2015-05-13

The efficiency of zeolite X nanocrystals (FAU-type framework structure) containing different extra-framework cations (Li(+), Na(+), K(+), and Ca(2+)) in slowing the thermal oxidation of palm oil is reported. The oxidation study of palm oil is conducted in the presence of zeolite nanocrystals (0.5 wt %) at 150 °C. Several characterization techniques such as visual analysis, colorimetry, rheometry, total acid number (TAN), FT-IR spectroscopy, (1)H NMR spectroscopy, and Karl Fischer analyses are applied to follow the oxidative evolution of the oil. It was found that zeolite nanocrystals decelerate the oxidation of palm oil through stabilization of hydroperoxides, which are the primary oxidation product, and concurrently via adsorption of the secondary oxidation products (alcohols, aldehydes, ketones, carboxylic acids, and esters). In addition to the experimental results, periodic density functional theory (DFT) calculations are performed to elucidate further the oxidation process of the palm oil in the presence of zeolite nanocrystals. The DFT calculations show that the metal complexes formed with peroxides are more stable than the complexes with alkenes with the same ions. The peroxides captured in the zeolite X nanocrystals consequently decelerate further oxidation toward formation of acids. Unlike the monovalent alkali metal cations in the zeolite X nanocrystals (K(+), Na(+), and Li(+)), Ca(2+) reduced the acidity of the oil by neutralizing the acidic carboxylate compounds to COO(-)(Ca(2+))1/2 species.

Observing the morphology of single-layered embedded silicon nanocrystals by using temperature-stable TEM membranes

Directory of Open Access Journals (Sweden)

Sebastian Gutsch

2015-04-01

Full Text Available We use high-temperature-stable silicon nitride membranes to investigate single layers of silicon nanocrystal ensembles by energy filtered transmission electron microscopy. The silicon nanocrystals are prepared from the precipitation of a silicon-rich oxynitride layer sandwiched between two SiO2 diffusion barriers and subjected to a high-temperature annealing. We find that such single layers are very sensitive to the annealing parameters and may lead to a significant loss of excess silicon. In addition, these ultrathin layers suffer from significant electron beam damage that needs to be minimized in order to image the pristine sample morphology. Finally we demonstrate how the silicon nanocrystal size distribution develops from a broad to a narrow log-normal distribution, when the initial precipitation layer thickness and stoichiometry are below a critical value.

Optical characterization of nanocrystals in silicon rich oxide superlattices and porous silicon

International Nuclear Information System (INIS)

Agocs, E.; Petrik, P.; Milita, S.; Vanzetti, L.; Gardelis, S.; Nassiopoulou, A.G.; Pucker, G.; Balboni, R.; Fried, M.

2011-01-01

We propose to analyze ellipsometry data by using effective medium approximation (EMA) models. Thanks to EMA, having nanocrystalline reference dielectric functions and generalized critical point (GCP) model the physical parameters of two series of samples containing silicon nanocrystals, i.e. silicon rich oxide (SRO) superlattices and porous silicon layers (PSL), have been determined. The superlattices, consisting of ten SRO/SiO 2 layer pairs, have been prepared using plasma enhanced chemical vapor deposition. The porous silicon layers have been prepared using short monopulses of anodization current in the transition regime between porous silicon formation and electropolishing, in a mixture of hydrofluoric acid and ethanol. The optical modeling of both structures is similar. The effective dielectric function of the layer is calculated by EMA using nanocrystalline components (nc-Si and GCP) in a dielectric matrix (SRO) or voids (PSL). We discuss the two major problems occurring when modeling such structures: (1) the modeling of the vertically non-uniform layer structures (including the interface properties like nanoroughness at the layer boundaries) and (2) the parameterization of the dielectric function of nanocrystals. We used several techniques to reduce the large number of fit parameters of the GCP models. The obtained results are in good agreement with those obtained by X-ray diffraction and electron microscopy. We investigated the correlation of the broadening parameter and characteristic EMA components with the nanocrystal size and the sample preparation conditions, such as the annealing temperatures of the SRO superlattices and the anodization current density of the porous silicon samples. We found that the broadening parameter is a sensitive measure of the nanocrystallinity of the samples, even in cases, where the nanocrystals are too small to be visible for X-ray scattering. Major processes like sintering, phase separation, and intermixing have been

Strain relaxation in epitaxial GaAs/Si (0 0 1) nanostructures

Science.gov (United States)

Kozak, Roksolana; Prieto, Ivan; Arroyo Rojas Dasilva, Yadira; Erni, Rolf; Skibitzki, Oliver; Capellini, Giovanni; Schroeder, Thomas; von Känel, Hans; Rossell, Marta D.

2017-11-01

Crystal defects, present in 100 nm GaAs nanocrystals grown by metal organic vapour phase epitaxy on top of (0 0 1)-oriented Si nanotips (with a tip opening 50-90 nm), have been studied by means of high-resolution aberration-corrected high-angle annular dark-field scanning transmission electron microscopy. The role of 60° perfect, 30° and 90° Shockley partial misfit dislocations (MDs) in the plastic strain relaxation of GaAs on Si is discussed. Formation conditions of stair-rod dislocations and coherent twin boundaries in the GaAs nanocrystals are explained. Also, although stacking faults are commonly observed, we show here that synthesis of GaAs nanocrystals with a minimum number of these defects is possible. On the other hand, from the number of MDs, we have to conclude that the GaAs nanoparticles are fully relaxed plastically, such that for the present tip sizes no substrate compliance can be observed.

Sequential coating upconversion NaYF{sub 4}:Yb,Tm nanocrystals with SiO{sub 2} and ZnO layers for NIR-driven photocatalytic and antibacterial applications

Energy Technology Data Exchange (ETDEWEB)

Tou, Meijie; Luo, Zhenguo; Bai, Song; Liu, Fangying; Chai, Qunxia; Li, Sheng; Li, Zhengquan, E-mail: zqli@zjnu.edu.cn

2017-01-01

ZnO is one of the most promising materials for both photocatalytic and antibacterial applications, but its wide bandgap requires the excitation of UV light which limits their applications under visible and NIR bands. Herein, we demonstrate a facile approach to synthesize core-shell-shell hybrid nanoparticles consisting of hexagonal NaYF{sub 4}:Yb,Tm, amorphous SiO{sub 2} and wurtzite ZnO. The upconversion nanocrystals are used as the core seeds and sequentially coated with an insulting shell and a semiconductor layer. Such hybrid nanoparticles can efficiently utilize the NIR light through the upconverting process, and display notable photocatalytic performance and antibacterial activity under NIR irradiation. The developed NaYF{sub 4}:Yb,Tm@SiO{sub 2}@ZnO nanoparticles are characterized with TEM, XRD, EDS, XPS and PL spectra, and their working mechanism is also elucidated. - Highlights: • Core-shell NaYF{sub 4}:Yb,Tm@SiO{sub 2}@TiO{sub 2} NPs were synthesized via a sequential coating method. • Hybrid NaYF{sub 4}:Yb,Tm@SiO{sub 2}@TiO{sub 2} NPs show NIR-light enhanced photocatalytic activity. • NIR-driven antibacterial performance has been realized with NaYF{sub 4}:Yb,Tm@SiO{sub 2}@TiO{sub 2} NPs. • Working mechanism of the hybrid photocatalysts as antibacterial agents was proposed.

Thermoelectric Properties of Nanograined Si-Ge-Au Thin Films Grown by Molecular Beam Deposition

Science.gov (United States)

Nishino, Shunsuke; Ekino, Satoshi; Inukai, Manabu; Omprakash, Muthusamy; Adachi, Masahiro; Kiyama, Makoto; Yamamoto, Yoshiyuki; Takeuchi, Tsunehiro

2018-06-01

Conditions to achieve extremely large Seebeck coefficient and extremely small thermal conductivity in Si-Ge-Au thin films formed of nanosized grains precipitated in amorphous matrix have been investigated. We employed molecular beam deposition to prepare Si1- x Ge x Au y thin films on sapphire substrate. The deposited films were annealed under nitrogen gas atmosphere at 300°C to 500°C for 15 min to 30 min. Nanocrystals dispersed in amorphous matrix were clearly observed by transmission electron microscopy. We did not observe anomalously large Seebeck coefficient, but very low thermal conductivity of nearly 1.0 W K-1 m-1 was found at around 0.2 Si-Ge bulk material for which dimensionless figure of merit of ZT ≈ 1 was reported at high temperature.

Hydrothermal Synthesis of PbTiO3 Nanocrystals with a pH-Adjusting Agent of Ammonia Solution

Science.gov (United States)

Li, Xinyi; Huang, Zhixiong; Zhang, Lianmeng; Guo, Dongyun

2018-05-01

The PbTiO3 nanocrystals were synthesized by a hydrothermal method, and ammonia solution was firstly used as a pH-adjusting agent. The effect of ammonia concentration on formation and morphologies of PbTiO3 nanocrystals was investigated. At low ammonia concentration (0-2.2 mol/L), no perovskite PbTiO3 phase was formed. When the ammonia concentration was 4.4 mol/L, the rod-like PbTiO3 nanocrystals with highly crystalline were successfully synthesized. As the ammonia concentration further increased to 13.2 mol/L, the flake-like PbTiO3 nanocrystals were formed.

PECVD Tekniği ile Büyütülmüş İnce Filmlerde Oluşan Ge ve SiGe Nanokristallerin Geçirgen Elektron Mikroskobu (TEM) ,Raman ve Fotoışıma Spektroskopisi Teknikleri ile İncelenmesi

OpenAIRE

Şahin, Bünyamin; Ağan, Sedat

2009-01-01

We report an experimental study, optical properties of Ge and SiGe nanocrystals in SiOx structures are investigated by using Transmission Electron Microscopy (TEM), Raman and Photlüminescence Spectroscopy techniques. Ge nanocrystals in silicon oxide thin films have been grown with different annealing time by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique. The aim of our work is to determine size and size distiributions Ge, SiGe nanocrystals in SiOx martix due to annealing process...

Glass forming ability of Al–Ni–La alloys with Si addition

International Nuclear Information System (INIS)

Yi, J.J.; Xiong, X.Z.; Inoue, A.; Kong, L.T.; Li, J.F.

2015-01-01

(Al_8_5_._5Ni_9_._5La_5)_1_0_0_−_xSi_x, (Al_8_6Ni_9La_5)_1_0_0_−_xSi_x, (Al_8_6Ni_9_._5La_4_._5)_1_0_0_−_xSi_x, (Al_8_6Ni_1_0La_4)_1_0_0_−_xSi_x and (Al_8_6Ni_1_0_._5La_3_._5)_1_0_0_−_xSi_x alloys, where x = 0.0, 0.2, 0.5, 1.0, 1.5 and 2.0, were cast under the same suction casting conditions into a wedge-shaped copper mold for investigating the effect of Si addition on the glass-forming ability (GFA). The GFA of the Al–Ni–La base alloys, except for the optimal glass former (Al_8_5_._5Ni_9_._5La_5), is enhanced when a proper content of Si is added. The largest content of Si up to which GFA can be enhanced changes in the following order of the base alloys: Al_8_6Ni_9La_5, Al_8_6Ni_9_._5La_4_._5, Al_8_6Ni_1_0La_4 and Al_8_6Ni_1_0_._5La_3_._5. The enhancement of GFA due to Si addition becomes more significant as the La content decreases. This is presumably because more free Al atoms are present in the base alloy. - Highlights: • 0.2–2.0 at. % Si was added to each ternary base alloy. • Wedge-shaped samples were suction cast to obtain the glass-forming ability (GFA). • The GFA of the ternary non-optimal glass formers can be enhanced by Si addition. • The number of free-Al atoms dominates the best Si addition.

Carbon nanotube growth from catalytic nano-clusters formed by hot-ion-implantation into the SiO{sub 2}/Si interface

Energy Technology Data Exchange (ETDEWEB)

Hoshino, Yasushi, E-mail: yhoshino@kanagawa-u.ac.jp [Department of Information Sciences, Kanagawa University, 2946 Tsuchiya, Hiratsuka, Kanagawa 259-1293 (Japan); Arima, Hiroki; Yokoyama, Ai; Saito, Yasunao; Nakata, Jyoji [Department of Information Sciences, Kanagawa University, 2946 Tsuchiya, Hiratsuka, Kanagawa 259-1293 (Japan)

2012-07-01

We have studied growth of chirality-controlled carbon nanotubes (CNTs) from hot-implantation-formed catalytic nano-clusters in a thermally grown SiO{sub 2}/Si substrate. This procedure has the advantage of high controllability of the diameter and the number of clusters by optimizing the conditions of the ion implantation. In the present study, Co{sup +} ions with ion dose of 8 Multiplication-Sign 10{sup 16} cm{sup -2} are implanted in the vicinity of the SiO{sub 2}/Si interface at 300 Degree-Sign C temperature. The implanted Co atoms located in the SiO{sub 2} layer has an amorphous-like structure with a cluster diameter of several nm. In contrast, implanted Co atoms in the Si substrate are found to take a cobalt silicide structure, confirmed by the high-resolution image of transmission electron microscope. CNTs are grown by microwave-plasma-enhanced chemical vapor deposition. We have confirmed a large amount of vertically-aligned multi-walled CNTs from the Co nano-clusters formed by the hot-ion-implantation near the SiO{sub 2}/Si interface.

From Artificial Atoms to Nanocrystal Molecules: Preparation and Properties of More Complex Nanostructures

Energy Technology Data Exchange (ETDEWEB)

Choi, Charina L; Alivisatos, A Paul

2009-10-20

Quantum dots, which have found widespread use in fields such as biomedicine, photovoltaics, and electronics, are often called artificial atoms due to their size-dependent physical properties. Here this analogy is extended to consider artificial nanocrystal molecules, formed from well-defined groupings of plasmonically or electronically coupled single nanocrystals. Just as a hydrogen molecule has properties distinct from two uncoupled hydrogen atoms, a key feature of nanocrystal molecules is that they exhibit properties altered from those of the component nanoparticles due to coupling. The nature of the coupling between nanocrystal atoms and its response to vibrations and deformations of the nanocrystal molecule bonds are of particular interest. We discuss synthetic approaches, predicted and observed physical properties, and prospects and challenges toward this new class of materials.

Charge transport in metal oxide nanocrystal-based materials

Science.gov (United States)

Runnerstrom, Evan Lars

structure. Charge transport can obviously be taken to mean the conduction of electrons, but it also refers to the motion of ions, such as lithium ions and protons. In many cases, the transport of ions is married to the motion of electrons as well, either through an external electrical circuit, or within the same material in the case of mixed ionic electronic conductors. The collective motion of electrons over short length scales, that is, within single nanocrystals, is also a subject of study as it pertains to plasmonic nanocrystals. Finally, charge transport can also be coupled to or result from the formation of defects in metal oxides. All of these modes of charge transport in metal oxides gain further complexity when considered in nanocrystalline systems, where the introduction of numerous surfaces can change the character of charge transport relative to bulk systems, providing opportunities to exploit new physical phenomena. Part I of this dissertation explores the combination of electronic and ionic transport in electrochromic devices based on nanocrystals. Colloidal chemistry and solution processing are used to fabricate nanocomposites based on electrochromic tin-doped indium oxide (ITO) nanocrystals. The nanocomposites, which are completely synthesized using solution processing, consist of ITO nanocrystals and lithium bis(trifluoromethylsulfonyl)amide (LiTFSI) salt dispersed in a lithium ion-conducting polymer matrix of either poly(ethylene oxide) (PEO) or poly(methyl methacrylate) (PMMA). ITO nanocrystals are prepared by colloidal synthetic methods and the nanocrystal surface chemistry is modified to achieve favorable nanocrystal-polymer interactions. Homogeneous solutions containing polymer, ITO nanocrystals, and lithium salt are thus prepared and deposited by spin casting. Characterization by DC electronic measurements, microscopy, and x-ray scattering techniques show that the ITO nanocrystals form a complete, connected electrode within a polymer electrolyte

Capping Ligand Vortices as "Atomic Orbitals" in Nanocrystal Self-Assembly.

Science.gov (United States)

Waltmann, Curt; Horst, Nathan; Travesset, Alex

2017-11-28

We present a detailed analysis of the interaction between two nanocrystals capped with ligands consisting of hydrocarbon chains by united atom molecular dynamics simulations. We show that the bonding of two nanocrystals is characterized by ligand textures in the form of vortices. These results are generalized to nanocrystals of different types (differing core and ligand sizes) where the structure of the vortices depends on the softness asymmetry. We provide rigorous calculations for the binding free energy, show that these energies are independent of the chemical composition of the cores, and derive analytical formulas for the equilibrium separation. We discuss the implications of our results for the self-assembly of single-component and binary nanoparticle superlattices. Overall, our results show that the structure of the ligands completely determines the bonding of nanocrystals, fully supporting the predictions of the recently proposed Orbifold topological model.

Nuclear magnetic relaxation studies of semiconductor nanocrystals and solids

Energy Technology Data Exchange (ETDEWEB)

Sachleben, Joseph Robert [Lawrence Berkeley Lab., CA (United States); California Univ., Berkeley, CA (United States). Dept. of Chemistry

1993-09-01

Semiconductor nanocrystals, small biomolecules, and ¹³C enriched solids were studied through the relaxation in NMR spectra. Surface structure of semiconductor nanocrystals (CdS) was deduced from high resolution ¹H and ¹³C liquid state spectra of thiophenol ligands on the nanocrystal surfaces. The surface coverage by thiophenol was found to be low, being 5.6 and 26% for nanocrystal radii of 11.8 and 19.2 Å. Internal motion is estimated to be slow with a correlation time > 10^-8 s^-1. The surface thiophenol ligands react to form a dithiophenol when the nanocrystals were subjected to O₂ and ultraviolet. A method for measuring ¹⁴N-¹H J-couplings is demonstrated on pyridine and the peptide oxytocin; selective 2D T₁ and T₂ experiments are presented for measuring relaxation times in crowded spectra with overlapping peaks in 1D, but relaxation effects interfere. Possibility of carbon-carbon cross relaxation in ¹³C enriched solids is demonstrated by experiments on zinc acetate and L-alanine.

Nondegenerate Four-Wave Mixing in Gold Nanocomposites Formed by Ion Implantation

International Nuclear Information System (INIS)

Saonov, V.P.; Zhu, J.G.; Lepeshkin, N.N.; Armstrong, R.L.; Shalaev, V.M.; Ying, Z.C.; White, C.W.; Zuhr, R.A.

1999-01-01

Nondegenerate four-wave mixing technique has been used to investigate the third-order nonlinear susceptibility for nanocomposite material with Au nanocrystals formed inside a SiO 2 glass matrix. High concentrations of encapsulated Au nanocrystals are formed by implantation of Au ions into fused silica glass substrates and thermal annealing. The size distribution and the depth profiles of the Au nanoparticles can be controlled by the implantation dose, energy and annealing temperatures. The high value of the third-order susceptibility - (0.26--1.3)x10 -7 esu was found in the range of the frequency detunings near the surface plasmon resonance. Two characteristic relaxation times, 0.66 ps and 5.3 ps, have been extracted from the detuning curve of the third-order susceptibility as the probe-beam frequency changes and the pump-beam frequency fixed at the plasmon resonance. The first relaxation time was attributed to electron-phonon relaxation, and the second to thermal diffusion to the host medium. The efficient nondegenerate conversion is attractive for optical processing

Silicon Promotes Exodermal Casparian Band Formation in Si-Accumulating and Si-Excluding Species by Forming Phenol Complexes.

Directory of Open Access Journals (Sweden)

Alexander T Fleck

Full Text Available We studied the effect of Silicon (Si on Casparian band (CB development, chemical composition of the exodermal CB and Si deposition across the root in the Si accumulators rice and maize and the Si non-accumulator onion. Plants were cultivated in nutrient solution with and without Si supply. The CB development was determined in stained root cross-sections. The outer part of the roots containing the exodermis was isolated after enzymatic treatment. The exodermal suberin was transesterified with MeOH/BF3 and the chemical composition was measured using gas chromatography-mass spectroscopy (GC-MS and flame ionization detector (GC-FID. Laser ablation-inductively coupled plasma-mass spectroscopy (LA-ICP-MS was used to determine the Si deposition across root cross sections. Si promoted CB formation in the roots of Si-accumulator and Si non-accumulator species. The exodermal suberin was decreased in rice and maize due to decreased amounts of aromatic suberin fractions. Si did not affect the concentration of lignin and lignin-like polymers in the outer part of rice, maize and onion roots. The highest Si depositions were found in the tissues containing CB. These data along with literature were used to suggest a mechanism how Si promotes the CB development by forming complexes with phenols.

Marker experiments in growth studies of Ni2Si, Pd2Si, and CrSi2 formed both by thermal annealing and by ion mixing

International Nuclear Information System (INIS)

Hung, L.S.; Mayer, J.W.; Pai, C.S.; Lau, S.S.

1985-01-01

Inert markers (evaporated tungsten and silver) were used in growth studies of silicides formed both by thermal annealing and by ion mixing in the Ni/Si, Pd/Si, and Cr/Si systems. The markers were initially imbedded inside silicides and backscattering spectrometry was used to determine the marker displacement after different processing conditions. The results obtained in thermal annealing are quite consistent with that found in previous investigations. Ni is the dominant diffusing species in Ni 2 Si, while Si is the diffusing species in CrSi 2 . In Pd 2 Si, both Pd and Si are moving species with Pd the faster of the two. In contrast, in growth of silicides by ion irradiation Si is the faster diffusing species in all three systems

Structural phase transitions in niobium oxide nanocrystals

Science.gov (United States)

Yuvakkumar, R.; Hong, Sun Ig

2015-09-01

Niobium oxide nanocrystals were successfully synthesized employing the green synthesis method. Phase formation, microstructure and compositional properties of 1, 4 and 7 days incubation treated samples after calcinations at 450 °C were examined using X-ray diffraction, Raman, photoluminescence (PL), infrared, X-ray photoelectron spectra and transmission electron microscopic characterizations. It was observed that phase formation of Nb2O5 nanocrystals was dependent upon the incubation period required to form stable metal oxides. The characteristic results clearly revealed that with increasing incubation and aging, the transformation of cubic, orthorhombic and monoclinic phases were observed. The uniform heating at room temperature (32 °C) and the ligation of niobium atoms due to higher phenolic constituents of utilized rambutan during aging processing plays a vital role in structural phase transitions in niobium oxide nanocrystals. The defects over a period of incubation and the intensities of the PL spectra changing over a period of aging were related to the amount of the defects induced by the phase transition.

Glass forming ability of Al–Ni–La alloys with Si addition

Energy Technology Data Exchange (ETDEWEB)

Yi, J.J.; Xiong, X.Z. [State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Inoue, A. [State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); WPI-Advanced Institute for Material Research, Tohoku University, Sendai 980-8577 (Japan); Kong, L.T. [State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Li, J.F., E-mail: jfli@sjtu.edu.cn [State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China)

2015-11-25

(Al{sub 85.5}Ni{sub 9.5}La{sub 5}){sub 100−x}Si{sub x}, (Al{sub 86}Ni{sub 9}La{sub 5}){sub 100−x}Si{sub x}, (Al{sub 86}Ni{sub 9.5}La{sub 4.5}){sub 100−x}Si{sub x}, (Al{sub 86}Ni{sub 10}La{sub 4}){sub 100−x}Si{sub x} and (Al{sub 86}Ni{sub 10.5}La{sub 3.5}){sub 100−x}Si{sub x} alloys, where x = 0.0, 0.2, 0.5, 1.0, 1.5 and 2.0, were cast under the same suction casting conditions into a wedge-shaped copper mold for investigating the effect of Si addition on the glass-forming ability (GFA). The GFA of the Al–Ni–La base alloys, except for the optimal glass former (Al{sub 85.5}Ni{sub 9.5}La{sub 5}), is enhanced when a proper content of Si is added. The largest content of Si up to which GFA can be enhanced changes in the following order of the base alloys: Al{sub 86}Ni{sub 9}La{sub 5}, Al{sub 86}Ni{sub 9.5}La{sub 4.5}, Al{sub 86}Ni{sub 10}La{sub 4} and Al{sub 86}Ni{sub 10.5}La{sub 3.5}. The enhancement of GFA due to Si addition becomes more significant as the La content decreases. This is presumably because more free Al atoms are present in the base alloy. - Highlights: • 0.2–2.0 at. % Si was added to each ternary base alloy. • Wedge-shaped samples were suction cast to obtain the glass-forming ability (GFA). • The GFA of the ternary non-optimal glass formers can be enhanced by Si addition. • The number of free-Al atoms dominates the best Si addition.

Colloidal GdVO4:Eu3+@SiO2 nanocrystals for highly selective and sensitive detection of Cu2+ ions

Science.gov (United States)

Liang, Yanjie; Noh, Hyeon Mi; Park, Sung Heum; Choi, Byung Chun; Jeong, Jung Hyun

2018-03-01

Nowadays, in view of health and safety demands, the controlled design of selective and sensitive sensors for Cu2+ detection is of considerable importance. Therefore, we construct herein core-shell colloidal GdVO4:Eu3+@SiO2 nanocrystals (NCs) as optical sensor for the detection of Cu2+, which were synthesized by a facile hydrothermal reaction and encapsulated with a uniform layer of ultrathin silica through a sol-gel strategy. The NCs present strong red emission due to energy transfer from VO43- groups to Eu3+ when exciting with ultraviolet (UV) light. This intense red emission from Eu3+ could be selectively quenched in the presence of Cu2+ in comparison to other metal ions and the limit of detection is as low as 80 nM in aqueous solution. It is revealed that the spectral overlap between the emission band of NCs and the absorption of Cu2+ accounts for this intriguing luminescence behavior. The detection ability is highly reversible by the addition of ethylenediaminetetraacetic acid (EDTA) with the recovery of almost 100% of the original luminescence. The luminescence quenching and recovery processes can be performed repeatedly with good sensing ability. These remarkable performances allow the colloidal GdVO4:Eu3+@SiO2 NCs a promising fluorescence chemosensor for detecting Cu2+ ions in aqueous solution.

Tuning Confinement in Colloidal Silicon Nanocrystals with Saturated Surface Ligands

Energy Technology Data Exchange (ETDEWEB)

Neale, Nathan R [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Carroll, Gerard [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Limpens, Rens [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

2018-04-16

The optical properties of silicon nanocrystals (Si NCs) are a subject of intense study and continued debate. In particular, Si NC photoluminescence (PL) properties are known to depend strongly on the surface chemistry, resulting in electron-hole recombination pathways derived from the Si NC band-edge, surface-state defects, or combined NC-conjugated ligand hybrid states. In this Letter, we perform a comparison of three different saturated surface functional groups - alkyls, amides, and alkoxides - on nonthermal plasma-synthesized Si NCs. We find a systematic and size-dependent high-energy (blue) shift in the PL spectrum of Si NCs with amide and alkoxy functionalization relative to alkyl. Time-resolved photoluminescence and transient absorption spectroscopies reveal no change in the excited-state dynamics between Si NCs functionalized with alkyl, amide, or alkoxide ligands, showing for the first time that saturated ligands - not only surface-derived charge-transfer states or hybridization between NC and low-lying ligand orbitals - are responsible for tuning the Si NC optical properties. To explain these PL shifts we propose that the atom bound to the Si NC surface strongly interacts with the Si NC electronic wave function and modulates the Si NC quantum confinement. These results reveal a potentially broadly applicable correlation between the optoelectronic properties of Si NCs and related quantum-confined structures based on the interaction between NC surfaces and the ligand binding group.

Tuning Confinement in Colloidal Silicon Nanocrystals with Saturated Surface Ligands.

Science.gov (United States)

Carroll, Gerard M; Limpens, Rens; Neale, Nathan R

2018-05-09

The optical properties of silicon nanocrystals (Si NCs) are a subject of intense study and continued debate. In particular, Si NC photoluminescence (PL) properties are known to depend strongly on the surface chemistry, resulting in electron-hole recombination pathways derived from the Si NC band-edge, surface-state defects, or combined NC-conjugated ligand hybrid states. In this Letter, we perform a comparison of three different saturated surface functional groups-alkyls, amides, and alkoxides-on nonthermal plasma-synthesized Si NCs. We find a systematic and size-dependent high-energy (blue) shift in the PL spectrum of Si NCs with amide and alkoxy functionalization relative to alkyl. Time-resolved photoluminescence and transient absorption spectroscopies reveal no change in the excited-state dynamics between Si NCs functionalized with alkyl, amide, or alkoxide ligands, showing for the first time that saturated ligands-not only surface-derived charge-transfer states or hybridization between NC and low-lying ligand orbitals-are responsible for tuning the Si NC optical properties. To explain these PL shifts we propose that the atom bound to the Si NC surface strongly interacts with the Si NC electronic wave function and modulates the Si NC quantum confinement. These results reveal a potentially broadly applicable correlation between the optoelectronic properties of Si NCs and related quantum-confined structures based on the interaction between NC surfaces and the ligand binding group.

Flash-lamp-crystallized polycrystalline silicon films with high hydrogen concentration formed from Cat-CVD a-Si films

International Nuclear Information System (INIS)

Ohdaira, Keisuke; Tomura, Naohito; Ishii, Shohei; Matsumura, Hideki

2011-01-01

We investigate residual forms of hydrogen (H) atoms such as bonding configuration in poly-crystalline silicon (poly-Si) films formed by the flash-lamp-induced crystallization of catalytic chemical vapor deposited (Cat-CVD) a-Si films. Raman spectroscopy reveals that at least part of H atoms in flash-lamp-crystallized (FLC) poly-Si films form Si-H 2 bonds as well as Si-H bonds with Si atoms even using Si-H-rich Cat-CVD a-Si films, which indicates the rearrangement of H atoms during crystallization. The peak desorption temperature during thermal desorption spectroscopy (TDS) is as high as 900 o C, similar to the reported value for bulk poly-Si.

Silicon Nanocrystal Synthesis in Microplasma Reactor

Science.gov (United States)

Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

Nanocrystalline silicon particles with grains smaller than 5 nm are widely recognized as a key material in optoelectronic devices, lithium battery electrodes, and bio-medical labels. Another important characteristic is that silicon is an environmentally safe material that is used in numerous silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma-enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. In this study, we explore the possibility of microplasma technologies for efficient production of mono-dispersed nanocrystalline silicon particles on a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using a very-high-frequency (144 MHz) power source in a capillary glass tube with volume of less than 1 μl. Fundamental plasma parameters of the microplasma were characterized using optical emission spectroscopy, which respectively indicated electron density of 1015 cm-3, argon excitation temperature of 5000 K, and rotational temperature of 1500 K. Such high-density non-thermal reactive plasma can decompose silicon tetrachloride into atomic silicon to produce supersaturated silicon vapor, followed by gas-phase nucleation via three-body collision: particle synthesis in high-density plasma media is beneficial for promoting nucleation processes. In addition, further growth of silicon nuclei can be terminated in a short-residence-time reactor. Micro-Raman scattering spectra showed that as-deposited particles are mostly amorphous silicon with a small fraction of silicon nanocrystals. Transmission electron micrography confirmed individual 3-15 nm silicon nanocrystals. Although particles were not mono-dispersed, they were well separated and not coagulated.

Predicting Nanocrystal Shape through Consideration of Surface-Ligand Interactions

KAUST Repository

Bealing, Clive R.

2012-03-27

Density functional calculations for the binding energy of oleic acid-based ligands on Pb-rich {100} and {111} facets of PbSe nanocrystals determine the surface energies as a function of ligand coverage. Oleic acid is expected to bind to the nanocrystal surface in the form of lead oleate. The Wulff construction predicts the thermodynamic equilibrium shape of the PbSe nanocrystals. The equilibrium shape is a function of the ligand surface coverage, which can be controlled by changing the concentration of oleic acid during synthesis. The different binding energy of the ligand on the {100} and {111} facets results in different equilibrium ligand coverages on the facets, and a transition in the equilibrium shape from octahedral to cubic is predicted when increasing the ligand concentration during synthesis. © 2012 American Chemical Society.

MC3T3-E1 cell response of amorphous phase/TiO{sub 2} nanocrystal composite coating prepared by microarc oxidation on titanium

Energy Technology Data Exchange (ETDEWEB)

Zhou, Rui [Department of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Wei, Daqing, E-mail: daqingwei@hit.edu.cn [Department of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Yang, Haoyue; Feng, Wei [Department of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Cheng, Su [Department of Mechanical Engineering, School of Architecture and Civil Engineering, Harbin University of Science and Technology, Harbin 150001 (China); Li, Baoqiang; Wang, Yaming; Jia, Dechang; Zhou, Yu [Department of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)

2014-06-01

Bioactive amorphous phase/TiO{sub 2} nanocrystal (APTN) composite coatings were fabricated by microarc oxidation (MAO) on Ti. The APTN coatings are composed of much amorphous phase with Si, Na, Ca, Ti and O elements and a few TiO{sub 2} nanocrystals. With increasing applied voltage, the micropore density of the APTN coating decreases and the micropore size of the APTN coating increases. The results indicate that less MC3T3-E1 cells attach on the APTN coatings as compared to Ti. However, the APTN coatings greatly enhance the cell proliferation ability and the activity of alkaline phosphatase. The amorphous phase and the concentrations of the released Ca and Si from the APTN coatings during cell culture have significant effects on the cell response. - Highlights: • Amorphous phase/TiO2 nanocrystal (APTN) composite coatings were fabricated. • The MC3T3-E1 cell response of the APTN coatings was evaluated. • The APTN coatings greatly enhanced the cell proliferation ability.

Fluorescent cellulose nanocrystals via supramolecular assembly of terpyridine-modified cellulose nanocrystals and terpyridine-modified perylene

International Nuclear Information System (INIS)

Hassan, Mohammad L.; Moorefield, Charles M.; Elbatal, Hany S.; Newkome, George R.; Modarelli, David A.; Romano, Natalie C.

2012-01-01

Highlights: ► Surfaces of cellulose nanocrystals were modified with terpyridine ligands. ► Fluorescent nanocrystals could be obtained via self-assembly of terpyridine-modified perylene dye onto the terpyridine-modified cellulose nanocrystals. ► Further self-assembly of azide-functionalized terpyridine onto the fluorescent cellulose nanocrystals was possible to obtain nanocellulosic material with expected use in bioimaging. - Abstract: Due to their natural origin, biocompatibility, and non-toxicity, cellulose nanocrystals are promising candidates for applications in nanomedicine. Highly fluorescent nanocellulosic material was prepared via surface modification of cellulose nanocrystals with 2,2′:6′,2″-terpyridine side chains followed by supramolecular assembly of terpyridine-modified perylene dye onto the terpyridine-modified cellulose nanocrystals (CTP) via Ru III /Ru II reduction. The prepared terpyridine-modified cellulose-Ru II -terpyridine-modified perylene (CTP-Ru II -PeryTP) fluorescent nanocrystals were characterized using cross-polarized/magic angle spin 13 C nuclear magnetic resonance (CP/MAS 13 C NMR), Fourier transform infrared (FTIR), UV–visible, and fluorescence spectroscopy. In addition, further self-assembly of terpyridine units with azide functional groups onto CTP-Ru II -PeryTP was possible via repeating the Ru III /Ru II reduction protocol to prepare supramolecular fluorescent nanocrystals with azide functionality (CTP-Ru II -PeryTP-Ru II -AZTP). The prepared derivative may have potential application in bio-imaging since the terminal azide groups can be easily reacted with antigens via “Click” chemistry reaction.

Study of the photodissociation of a CdSe nanocrystal beam by means of photoluminescence and Raman scattering

CERN Document Server

Orii, T; Onari, S; Kaito, S I; Arai, T

1997-01-01

We developed an apparatus that enables us to perform optical measurements of nanocrystals suspended in vacuum. CdSe nanocrystals were produced by a gas evaporation method, and nanocrystal beams were then formed using an inert-gas flow with differential pumping. We measured photoluminescence spectra of the nanocrystal beams with excitations of various photon energies and powers. For a low excitation power, edge emission of the CdSe nanocrystal beam was observed. With increase of the laser power, Raman lines of Se dimers emitted due to the photodissociation of CdSe nanocrystals were observed. It was found that the thresholds of the excitation laser fluence for the photodissociation of CdSe nanocrystals were much smaller than the thresholds of laser fluence for the laser-induced emission of Se atoms from bulk CdSe. The electronic process is dominant in the photodissociation of CdSe nanocrystals whose surfaces are completely free. We suggest that the effective supply of carriers confined in nanocrystals to the su...

Segregation gettering by implantation-formed cavities and B-Si precipitates in silicon

International Nuclear Information System (INIS)

Myers, S.M.; Petersen, G.A.; Follstaedt, D.M.

1998-01-01

The authors show that Fe, Co, Cu, and Au in Si undergo strong segregation gettering to cavities and B-Si precipitates formed by He or B ion implantation and annealing. The respective mechanisms are argued to be chemisorption on the cavity walls and occupation of solution sites within the disordered, B-rich, B-Si phase. The strengths of the reactions are evaluated, enabling prediction of gettering performance

Synthesis of transparent chloroborosilicate nanoglass-ceramics: Crystallization and growth mechanism of BaCl2 nanocrystals

Directory of Open Access Journals (Sweden)

Nilanjana Shasmal

2015-12-01

Full Text Available Oxyfluoride glass-ceramics are extensively being investigated for their excellent optical properties and widespread use in photonic applications. But oxychloride systems are scarcely studied although they are potential candidates for those fields. Here we report chloroborosilicate glass system SiO2–B2O3–BaO–K2O–Al2O3–BaCl2 (mol% within which BaCl2 nanocrystals have been generated by melt-quench technique followed by heat treatment. Samples were characterized by differential scanning calorimetry, X-ray diffraction, infrared and UV–vis spectroscopy, elastic constants measurement, etc. Micro- and nanostructures were analyzed by using FESEM, TEM and SAED. Formation and growth mechanism of BaCl2 nanocrystals have been demonstrated with the help of schematic representations. Size (7–47 nm and morphology of the nanocrystals were found to be controlled by temperature and heat-treatment time. Activation energy for crystallization was determined by non-isothermal method using DSC and found to be 510 kJ/mol. Chloroborosilicate glasses containing BaCl2 nanocrystals having low-phonon energy (∼350 cm−1 are promising for different photonic applications.

Evidence of localized amorphous silicon clustering from Raman depth-probing of silicon nanocrystals in fused silica

International Nuclear Information System (INIS)

Barba, D; Martin, F; Ross, G G

2008-01-01

Silicon nanocrystals (Si-nc) and amorphous silicon (α-Si) produced by silicon implantation in fused silica have been studied by micro-Raman spectroscopy. Information regarding the Raman signature of the α-Si phonon excitation was extracted from Raman depth-probing measurements using the phenomenological phonon confinement model. The spectral deconvolution of the Raman measurements recorded at different laser focusing depths takes into account both the Si-nc size variation and the Si-nc spatial distribution within the sample. The phonon peak associated with α-Si around 470 cm -1 is greatest for in-sample laser focusing, indicating that the formation of amorphous silicon is more important in the region containing a high concentration of silicon excess, where large Si-nc are located. As also observed for Si-nc systems prepared by SiO x layer deposition, this result demonstrates the presence of α-Si in high excess Si implanted Si-nc systems

Nanocrystal Solar Cells

Energy Technology Data Exchange (ETDEWEB)

Gur, Ilan [Univ. of California, Berkeley, CA (United States)

2006-01-01

This dissertation presents the results of a research agenda aimed at improving integration and stability in nanocrystal-based solar cells through advances in active materials and device architectures. The introduction of 3-dimensional nanocrystals illustrates the potential for improving transport and percolation in hybrid solar cells and enables novel fabrication methods for optimizing integration in these systems. Fabricating cells by sequential deposition allows for solution-based assembly of hybrid composites with controlled and well-characterized dispersion and electrode contact. Hyperbranched nanocrystals emerge as a nearly ideal building block for hybrid cells, allowing the controlled morphologies targeted by templated approaches to be achieved in an easily fabricated solution-cast device. In addition to offering practical benefits to device processing, these approaches offer fundamental insight into the operation of hybrid solar cells, shedding light on key phenomena such as the roles of electrode-contact and percolation behavior in these cells. Finally, all-inorganic nanocrystal solar cells are presented as a wholly new cell concept, illustrating that donor-acceptor charge transfer and directed carrier diffusion can be utilized in a system with no organic components, and that nanocrystals may act as building blocks for efficient, stable, and low-cost thin-film solar cells.

Sorting fluorescent nanocrystals with DNA

Energy Technology Data Exchange (ETDEWEB)

Gerion, Daniele; Parak, Wolfgang J.; Williams, Shara C.; Zanchet, Daniela; Micheel, Christine M.; Alivisatos, A. Paul

2001-12-10

Semiconductor nanocrystals with narrow and tunable fluorescence are covalently linked to oligonucleotides. These biocompounds retain the properties of both nanocrystals and DNA. Therefore, different sequences of DNA can be coded with nanocrystals and still preserve their ability to hybridize to their complements. We report the case where four different sequences of DNA are linked to four nanocrystal samples having different colors of emission in the range of 530-640 nm. When the DNA-nanocrystal conjugates are mixed together, it is possible to sort each type of nanoparticle using hybridization on a defined micrometer -size surface containing the complementary oligonucleotide. Detection of sorting requires only a single excitation source and an epifluorescence microscope. The possibility of directing fluorescent nanocrystals towards specific biological targets and detecting them, combined with their superior photo-stability compared to organic dyes, opens the way to improved biolabeling experiments, such as gene mapping on a nanometer scale or multicolor microarray analysis.

Synthesis and Properties of Nanoparticle Forms Saponite Clay, Cancrinite Zeolite and Phase Mixtures Thereof.

Science.gov (United States)

Shao, Hua; Pinnavaia, Thomas J

2010-09-01

The low-temperature synthesis (90°C) of nanoparticle forms of a pure phase smectic clay (saponite) and zeolite (cancrinite) is reported, along with phase mixtures thereof. A synthesis gel corresponding to the Si:Al:Mg unit cell composition of saponite (3.6:0.40:3.0) and a NaOH/Si ratio of 1.39 affords the pure phase clay with disordered nanolayer stacking. Progressive increases in the NaOH/Si ratio up to a value of 8.33 results in the co-crystallization of first garronite and then cancrinite zeolites with nanolath morphology. The resulting phase mixtures exhibit a compound particulate structure of intertwined saponite nanolayers and cancrinite nanolaths that cannot be formed through physical mixing of the pure phase end members. Under magnesium-free conditions, pure phase cancrinite nanocrystals are formed. The Si/Al ratio of the reaction mixture affects the particle morphology as well as the chemical composition of the cancrinite zeolite. Ordinarily, cancrinite crystallizes with a Si/Al ratio of 1.0, but a silicon-rich form of the zeolite (Si/Al=1.25) is crystallized at low temperature from a silica rich synthesis gel, as evidenced by (29)Si NMR spectroscopy and XEDS-TEM. Owing to the exceptionally high external surface areas of the pure phase clay (875 m(2)/g) and zeolite end members (8.9 - 40 m(2)/g), as well as their unique mixed phase composites (124 - 329 m(2)/g), these synthetic derivatives are promising model nanoparticles for studies of the bioavailability of poly-aromatic hydrocarbons immobilized in silicate bearing sediments and soils.

Synthesis and Optical Investigations of the Guest-Host Nanostructures Alumina-SiC and Alumina-In{sub 2}O{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Bouifoulen, A; Kassiba, A; Edely, M [Laboratoire de Physique de l' Etat Condense, UMR-CNRS 6087, Institut de recherche IRIM2F-FR-CNRS 2575-Universite du Maine, Avenue Olivier Messiaen, 72085 Le Mans Cedex 9 (France); Outzourhit, A; Oueriagli, A [Laboratoire de Physique du Solide et Couches Minces, Faculte des Sciences Semlalia, Universite Cadi Ayyad, B. P. 2390, Marrakech 40000, Maroc (Morocco); Makowska-Janusik, M [Institute of Physics, Al. Armii.Krajowej, 13/15, J. Dlugosz University, 42-200 Czestochowa (Poland); Szade, J, E-mail: kassiba@univ-lemans.fr [A.Chelkowski Institute of Physics - University Slaski in Katowice - 40-219 Katowice (Poland)

2011-04-01

Several strategies were developed to synthesise two classes of nanostructured thin films with nanocrystals of SiC (nc-SiC) or In{sub 2}O{sub 3} (nc-In{sub 2}O{sub 3}) confined in alumina. The syntheses were performed by using Rf-sputtering and co-pulverisation process of the suitable reactants. Thus, Al{sub 2}O{sub 3}/nc-SiC and Al{sub 2}O{sub 3}/nc-In{sub 2}O{sub 3} composite thin films were obtained and their structural and optical features analyzed respectively by XRD, XPS and UV-VIS absorption. The deposition conditions and the post-synthesis treatments were optimized in order to improve the crystalline character of confined nanocrystals. The optical properties were compared in the range 200 nm-1200 nm for bare alumina films or nanostructured ones with the semiconducting nanocrystals. The direct and indirect band band gaps were evaluated and discussed with regard to the stoechiometry and morphologies of the nanocomposite films

Hybrid nanocrystal/polymer solar cells based on tetrapod-shaped CdSexTe1-x nanocrystals

International Nuclear Information System (INIS)

Zhou Yi; Li Yunchao; Zhong Haizheng; Hou Jianhui; Ding Yuqin; Yang Chunhe; Li Yongfang

2006-01-01

A series of ternary tetrapodal nanocrystals of CdSe x Te 1-x with x = 0 (CdTe), 0.23, 0.53, 0.78, 1 (CdSe) were synthesized and used to fabricate hybrid nanocrystal/polymer solar cells. Herein, the nanocrystals acted as electron acceptors, and poly(2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH-PPV) was used as an electron donor. It was found that the open circuit voltage (V oc ), short-circuit current (J sc ) and power conversion efficiency (η) of the devices all increased with increasing Se content in the CdSe x Te 1-x nanocrystals under identical experimental conditions. The solar cell based on the blend of tetrapodal CdSe nanocrystals and MEH-PPV (9:1 w/w) showed the highest power conversion efficiency of 1.13% under AM 1.5, 80 mW cm -2 , and the maximum incident photon to converted current efficiency (IPCE) of the device reached 47% at 510 nm. The influence of nanocrystal composition on the photovoltaic properties of the hybrid solar cells was explained by the difference of the band level positions between MEH-PPV and the nanocrystals

Biomolecular Assembly of Gold Nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Micheel, Christine Marya [Univ. of California, Berkeley, CA (United States)

2005-05-20

Over the past ten years, methods have been developed to construct discrete nanostructures using nanocrystals and biomolecules. While these frequently consist of gold nanocrystals and DNA, semiconductor nanocrystals as well as antibodies and enzymes have also been used. One example of discrete nanostructures is dimers of gold nanocrystals linked together with complementary DNA. This type of nanostructure is also known as a nanocrystal molecule. Discrete nanostructures of this kind have a number of potential applications, from highly parallel self-assembly of electronics components and rapid read-out of DNA computations to biological imaging and a variety of bioassays. My research focused in three main areas. The first area, the refinement of electrophoresis as a purification and characterization method, included application of agarose gel electrophoresis to the purification of discrete gold nanocrystal/DNA conjugates and nanocrystal molecules, as well as development of a more detailed understanding of the hydrodynamic behavior of these materials in gels. The second area, the development of methods for quantitative analysis of transmission electron microscope data, used computer programs written to find pair correlations as well as higher order correlations. With these programs, it is possible to reliably locate and measure nanocrystal molecules in TEM images. The final area of research explored the use of DNA ligase in the formation of nanocrystal molecules. Synthesis of dimers of gold particles linked with a single strand of DNA possible through the use of DNA ligase opens the possibility for amplification of nanostructures in a manner similar to polymerase chain reaction. These three areas are discussed in the context of the work in the Alivisatos group, as well as the field as a whole.

High quality zinc-blende CdSe nanocrystals synthesized in a hexadecylamine-oleic acid-paraffin liquid mixture

Energy Technology Data Exchange (ETDEWEB)

Wang Lan, E-mail: lwang322@yahoo.com.cn [Department of Applied Physics, Harbin Institute of Technology, Harbin 150001 (China); Department of Physics, Harbin Medical University, Harbin 150081 (China); Sun Xiudong, E-mail: xdsun@hit.edu.cn [Department of Applied Physics, Harbin Institute of Technology, Harbin 150001 (China); Liu Wenjing [Department of Astronautic Science and Mechanics, Harbin Institute of Technology, Harbin 150001 (China); Liu Bingyi [Laboratory Center for the School of Pharmacy, Harbin Medical University, Harbin 150081 (China)

2010-03-15

Safe, common, and low-cost compounds were used as solvents for the non-tri-n-octylphosphine (TOP) synthesis of high quality CdSe nanocrystals (NCs) in open air. In oleic acid-paraffin liquid system, CdSe nanocrystals in the less common zinc-blende (ZB, cubic) crystal structure have been obtained. The effects of adding n-hexadecylamine (HDA) to different solutions were discussed. Stable, highly homogeneous and luminescent CdSe nanocrystals were formed by adding n-hexadecylamine to Cd solution rather than to Se solution. Without any size sorting, the size distribution of the nanocrystals can be readily controlled and the highest photoluminescence (PL) quantum efficiency (QE) of the nanocrystals was up to 20-30%.

High quality zinc-blende CdSe nanocrystals synthesized in a hexadecylamine-oleic acid-paraffin liquid mixture

International Nuclear Information System (INIS)

Wang Lan; Sun Xiudong; Liu Wenjing; Liu Bingyi

2010-01-01

Safe, common, and low-cost compounds were used as solvents for the non-tri-n-octylphosphine (TOP) synthesis of high quality CdSe nanocrystals (NCs) in open air. In oleic acid-paraffin liquid system, CdSe nanocrystals in the less common zinc-blende (ZB, cubic) crystal structure have been obtained. The effects of adding n-hexadecylamine (HDA) to different solutions were discussed. Stable, highly homogeneous and luminescent CdSe nanocrystals were formed by adding n-hexadecylamine to Cd solution rather than to Se solution. Without any size sorting, the size distribution of the nanocrystals can be readily controlled and the highest photoluminescence (PL) quantum efficiency (QE) of the nanocrystals was up to 20-30%.

Determination of silicon and aluminum in silicon carbide nanocrystals by high-resolution continuum source graphite furnace atomic absorption spectrometry.

Science.gov (United States)

Dravecz, Gabriella; Bencs, László; Beke, Dávid; Gali, Adam

2016-01-15

The determination of Al contaminant and the main component Si in silicon carbide (SiC) nanocrystals with the size-distribution of 1-8nm dispersed in an aqueous solution was developed using high-resolution continuum source graphite furnace atomic absorption spectrometry (HR-CS-GFAAS). The vaporization/atomization processes were investigated in a transversally heated graphite atomizer by evaporating solution samples of Al and Si preserved in various media (HCl, HNO3). For Si, the best results were obtained by applying a mixture of 5µg Pd plus 5µg Mg, whereas for Al, 10µg Mg (each as nitrate solution) was dispensed with the samples, but the results obtained without modifier were found to be better. This way a maximum pyrolysis temperature of 1200°C for Si and 1300°C for Al could be used, and the optimum (compromise) atomization temperature was 2400°C for both analytes. The Si and Al contents of different sized SiC nanocrystals, dispersed in aqueous solutions, were determined against aqueous (external) calibration standards. The correlation coefficients (R values) of the calibrations were found to be 0.9963 for Si and 0.9991 for Al. The upper limit of the linear calibration range was 2mg/l Si and 0.25mg/l Al. The limit of detection was 3µg/l for Si and 0.5µg/l for Al. The characteristic mass (m0) was calculated to be 389pg Si and 6.4pg Al. The Si and Al content in the solution samples were found to be in the range of 1.0-1.7mg/l and 0.1-0.25mg/l, respectively. Copyright © 2015 Elsevier B.V. All rights reserved.

Nanocrystal conversion chemistry: A unified and materials-general strategy for the template-based synthesis of nanocrystalline solids

International Nuclear Information System (INIS)

Vasquez, Yolanda; Henkes, Amanda E.; Chris Bauer, J.; Schaak, Raymond E.

2008-01-01

The concept of nanocrystal conversion chemistry, which involves the use of pre-formed nanoparticles as templates for chemical transformation into derivative solids, has emerged as a powerful approach for designing the synthesis of complex nanocrystalline solids. The general strategy exploits established synthetic capabilities in simple nanocrystal systems and uses these nanocrystals as templates that help to define the composition, crystal structure, and morphology of product nanocrystals. This article highlights key examples of 'conversion chemistry' approaches to the synthesis of nanocrystalline solids using a variety of techniques, including galvanic replacement, diffusion, oxidation, and ion exchange. The discussion is organized according to classes of solids, highlighting the diverse target systems that are accessible using similar chemical concepts: metals, oxides, chalcogenides, phosphides, alloys, intermetallic compounds, sulfides, and nitrides. - Graphical abstract: Nanocrystal conversion chemistry uses pre-formed nanoparticles as templates for chemical transformation into derivative solids, helping to define the composition, crystal structure, and morphology of product nanocrystals that have more complex features than their precursor templates. This article highlights the application of this concept to diverse classes of solids, including metals, oxides, chalcogenides, phosphides, alloys, intermetallics, sulfides, and nitrides

Pt Single Atoms Embedded in the Surface of Ni Nanocrystals as Highly Active Catalysts for Selective Hydrogenation of Nitro Compounds.

Science.gov (United States)

Peng, Yuhan; Geng, Zhigang; Zhao, Songtao; Wang, Liangbing; Li, Hongliang; Wang, Xu; Zheng, Xusheng; Zhu, Junfa; Li, Zhenyu; Si, Rui; Zeng, Jie

2018-06-13

Single-atom catalysts exhibit high selectivity in hydrogenation due to their isolated active sites, which ensure uniform adsorption configurations of substrate molecules. Compared with the achievement in catalytic selectivity, there is still a long way to go in exploiting the catalytic activity of single-atom catalysts. Herein, we developed highly active and selective catalysts in selective hydrogenation by embedding Pt single atoms in the surface of Ni nanocrystals (denoted as Pt 1 /Ni nanocrystals). During the hydrogenation of 3-nitrostyrene, the TOF numbers based on surface Pt atoms of Pt 1 /Ni nanocrystals reached ∼1800 h -1 under 3 atm of H 2 at 40 °C, much higher than that of Pt single atoms supported on active carbon, TiO 2 , SiO 2 , and ZSM-5. Mechanistic studies reveal that the remarkable activity of Pt 1 /Ni nanocrystals derived from sufficient hydrogen supply because of spontaneous dissociation of H 2 on both Pt and Ni atoms as well as facile diffusion of H atoms on Pt 1 /Ni nanocrystals. Moreover, the ensemble composed of the Pt single atom and nearby Ni atoms in Pt 1 /Ni nanocrystals leads to the adsorption configuration of 3-nitrostyrene favorable for the activation of nitro groups, accounting for the high selectivity for 3-vinylaniline.

Low Temperature Growth of In2O3and InN Nanocrystals on Si(111 via Chemical Vapour Deposition Based on the Sublimation of NH4Cl in In

Directory of Open Access Journals (Sweden)

Tsokkou Demetra

2009-01-01

Full Text Available Abstract Indium oxide (In2O3 nanocrystals (NCs have been obtained via atmospheric pressure, chemical vapour deposition (APCVD on Si(111 via the direct oxidation of In with Ar:10% O2at 1000 °C but also at temperatures as low as 500 °C by the sublimation of ammonium chloride (NH4Cl which is incorporated into the In under a gas flow of nitrogen (N2. Similarly InN NCs have also been obtained using sublimation of NH4Cl in a gas flow of NH3. During oxidation of In under a flow of O2the transfer of In into the gas stream is inhibited by the formation of In2O3around the In powder which breaks up only at high temperatures, i.e.T > 900 °C, thereby releasing In into the gas stream which can then react with O2leading to a high yield formation of isolated 500 nm In2O3octahedrons but also chains of these nanostructures. No such NCs were obtained by direct oxidation forT G < 900 °C. The incorporation of NH4Cl in the In leads to the sublimation of NH4Cl into NH3and HCl at around 338 °C which in turn produces an efficient dispersion and transfer of the whole In into the gas stream of N2where it reacts with HCl forming primarily InCl. The latter adsorbs onto the Si(111 where it reacts with H2O and O2leading to the formation of In2O3nanopyramids on Si(111. The rest of the InCl is carried downstream, where it solidifies at lower temperatures, and rapidly breaks down into metallic In upon exposure to H2O in the air. Upon carrying out the reaction of In with NH4Cl at 600 °C under NH3as opposed to N2, we obtain InN nanoparticles on Si(111 with an average diameter of 300 nm.

Electron energy-loss spectroscopy of single nanocrystals: mapping of tin allotropes

Science.gov (United States)

Roesgaard, Søren; Ramasse, Quentin; Chevallier, Jacques; Fyhn, Mogens; Julsgaard, Brian

2018-05-01

Using monochromated electron energy-loss spectroscopy (EELS), we are able to map different allotropes in Sn-nanocrystals embedded in Si. It is demonstrated that α-Sn and β-Sn, as well as an interface related plasmon, can be distinguished in embedded Sn-nanostructures. The EELS data is interpreted by standard non-negative matrix factorization followed by a manual Lorentzian decomposition. The decomposition allows for a more physical understanding of the EELS mapping without reducing the level of information. Extending the analysis from a reference system to smaller nanocrystals demonstrates that allotrope determination in nanoscale systems down below 5 nm is possible. Such local information proves the use of monochromated EELS mapping as a powerful technique to study nanoscale systems. This possibility enables investigation of small nanostructures that cannot be investigated through other means, allowing for a better understanding and thus leading to realizations that can result in nanomaterials with improved properties.

Hot-injection synthesis of Ni-ZnO hybrid nanocrystals with tunable magnetic properties and enhanced photocatalytic activity

Energy Technology Data Exchange (ETDEWEB)

Zeng, Deqian; Qiu, Yulong; Chen, Yuanzhi, E-mail: yuanzhi@xmu.edu.cn; Zhang, Qinfu; Liu, Xiang; Peng, Dong-Liang, E-mail: dlpeng@xmu.edu.cn [Xiamen University, Department of Materials Science and Engineering, Fujian Provincial Key Laboratory of Materials Genome, Collaborative Innovation Center of Chemistry for Energy Materials, College of Materials (China)

2017-04-15

Magnetic metal-semiconductor hybrid nanocrystals containing ferromagnetic Ni and semiconductor ZnO have been prepared via a hot-injection route. The Ni-ZnO hybrid nanocrystals have a flower-like morphology that consists of Ni inner cores and ZnO petal shells. In spite of their large lattice mismatch, ZnO nanocrystals can still grow on faceted Ni nanocrystals to form stable interfaces. The composition of Ni-ZnO hybrid nanocrystals is readily controlled, and the average size of Ni core is tunable from 25 to 50 nm. Room temperature ferromagnetic properties are observed in these hybrid nanocrystals, and tunable magnetic properties also can be achieved by varying the size of Ni core. The as-prepared Ni-ZnO hybrid nanocrystals exhibit enhanced photocatalytic performance under ultraviolet light illumination as compared to pure ZnO nanocrystals. Furthermore, the superior reusability of hybrid nanocrystals for photocatalytic application is achieved by virtue of their magnetic properties. The facile and efficient seed-mediate strategy is particularly attractive to construct hybrid magnetic-semiconducting heterostructures. The as-obtained Ni-ZnO hybrid nanocrystals offer great potential for various applications due to their combined magnetic and semiconducting properties and low-cost earth-abundant availability.

Effects of ultrasonic irradiation on crystallization and structural properties of EMT-type zeolite nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Ng, Eng-Poh, E-mail: epng@usm.my [School of Chemical Sciences, Universiti Sains Malaysia, USM, 11800 Penang (Malaysia); Awala, Hussein [Laboratoire Catalyse & Spectrochimie, CNRS-ENSICAEN, Université de Caen (France); Ghoy, Jia-Pei [School of Chemical Sciences, Universiti Sains Malaysia, USM, 11800 Penang (Malaysia); Vicente, Aurélie [Laboratoire Catalyse & Spectrochimie, CNRS-ENSICAEN, Université de Caen (France); Ling, Tau Chuan [Institute of Biological Sciences, Faculty of Science, University of Malaya (Malaysia); Ng, Yun Hau [School of Chemical Engineering, The University of New South Wales, Sydney (Australia); Mintova, Svetlana [Laboratoire Catalyse & Spectrochimie, CNRS-ENSICAEN, Université de Caen (France); Adam, Farook, E-mail: farook@usm.my [School of Chemical Sciences, Universiti Sains Malaysia, USM, 11800 Penang (Malaysia)

2015-06-01

Synthesis of EMT zeolite nanocrystals from rice husk ash biomass (RHA) under continuous ultrasonic irradiation is reported. The aging, nucleation and crystallization stages of EMT zeolite in the system were monitored at ambient temperature, and compared with the conventional hydrothermal method. It was found that ultrasonic wave induced rapid crystal growth of the nanosized EMT zeolite. Complete crystallization of EMT nanocrystals was achieved within 24 h which was much faster than conventional hydrothermal synthesis (36 h). Furthermore, XRD and TEM analyses revealed that more nuclei were formed during the nucleation stage, allowing the preparation of smaller zeolite nanocrystals with high crystallinity. The results also showed that sonocrystallization produced EMT zeolite with high yield (ca. 80%). The ultrasound-prepared EMT nanocrystals were also found to have high porosity and high hydrophilicity, making the material promising for water sorption applications including vapor sensing, heat pump and adsorption technologies. - Highlights: • Nanosized EMT zeolites are formed from rice husk ash under ultrasonic irradiation. • The effects of ultrasonic waves in nanosized EMT zeolite synthesis are studied. • Ultrasound induces rapid crystal growth and produces high zeolite yield. • Smaller zeolite nanocrystals with high crystallinity and large defect sites are obtained. • Improved surface hydrophilicity of crystals is beneficial for water sorption applications.

Net-shape forming and properties of high volume fraction SiCp/Al composites

International Nuclear Information System (INIS)

Ren Shubin; Qu Xuanhui; Guo Jia; He Xinbo; Qin Mingli; Shen Xiaoyu

2009-01-01

High performance SiCp/Al composites have been realized their net-shape forming by use of a novel process-ceramic injection molding (CIM) for the preparation of SiC preform and pressureless infiltration of aluminum alloys. The dimension precision of prepared SiCp/Al parts could reach about ±0.3%, and their properties could also better meet the requirement of electronic packaging on the materials. In this paper, the CIM process to fabricate SiC preform and the infiltration of SiC preform by Al alloys have been discussed in detail. Additionally, the properties of prepared SiCp/Al composites have also been given research and evaluation.

Progress on matrix SiC processing and properties for fully ceramic microencapsulated fuel form

International Nuclear Information System (INIS)

Terrani, K.A.; Kiggans, J.O.; Silva, C.M.; Shih, C.; Katoh, Y.; Snead, L.L.

2015-01-01

The consolidation mechanism and resulting properties of the silicon carbide (SiC) matrix of fully ceramic microencapsulated (FCM) fuel form are discussed. The matrix is produced via the nano-infiltration transient eutectic-forming (NITE) process. Coefficient of thermal expansion, thermal conductivity, and strength characteristics of this SiC matrix have been characterized in the unirradiated state. An ad hoc methodology for estimation of thermal conductivity of the neutron-irradiated NITE–SiC matrix is also provided to aid fuel performance modeling efforts specific to this concept. Finally, specific processing methods developed for production of an optimal and reliable fuel form using this process are summarized. These various sections collectively report the progress made to date on production of optimal FCM fuel form to enable its application in light water and advanced reactors

Communication: Visualization and spectroscopy of defects induced by dehydrogenation in individual silicon nanocrystals

Science.gov (United States)

Kislitsyn, Dmitry A.; Mills, Jon M.; Kocevski, Vancho; Chiu, Sheng-Kuei; DeBenedetti, William J. I.; Gervasi, Christian F.; Taber, Benjamen N.; Rosenfield, Ariel E.; Eriksson, Olle; Rusz, Ján; Goforth, Andrea M.; Nazin, George V.

2016-06-01

We present results of a scanning tunneling spectroscopy (STS) study of the impact of dehydrogenation on the electronic structures of hydrogen-passivated silicon nanocrystals (SiNCs) supported on the Au(111) surface. Gradual dehydrogenation is achieved by injecting high-energy electrons into individual SiNCs, which results, initially, in reduction of the electronic bandgap, and eventually produces midgap electronic states. We use theoretical calculations to show that the STS spectra of midgap states are consistent with the presence of silicon dangling bonds, which are found in different charge states. Our calculations also suggest that the observed initial reduction of the electronic bandgap is attributable to the SiNC surface reconstruction induced by conversion of surface dihydrides to monohydrides due to hydrogen desorption. Our results thus provide the first visualization of the SiNC electronic structure evolution induced by dehydrogenation and provide direct evidence for the existence of diverse dangling bond states on the SiNC surfaces.

A single molecule switch based on two Pd nanocrystals linked

Indian Academy of Sciences (India)

Conducting molecule; nanocrystals; scanning tunneling microscopy; negative differential resistance. Abstract. Tunneling spectroscopy measurements have been carried out on a single molecule device formed by two Pd ... Current Issue : Vol.

Organo-Functionalization of Silicon Nanocrystals Synthesized by Inductively Coupled Plasma Chemical Vapor Deposition

Energy Technology Data Exchange (ETDEWEB)

Lee, Don-Sung; Choe, Dong-Hoe; Jeong, Hyun-Dam [Chonnam National University, Gwangju (Korea, Republic of); Yoo, Seung-Wan; Kim, Jung-Hyung [Korea Research Institute of Standards and Science, Daejeon (Korea, Republic of)

2016-05-15

Octadecyl-terminated silicon nanocrystals (ODE-Si NCs) are obtained via a surface-initiated thermal hydrosilylation reaction on hydride-terminated Si NCs (H-Si NCs). Pristine Si NCs were synthesized at the gram scale by using inductively coupled plasma chemical vapor deposition (ICP-CVD) . The H-Si NCs were produced through a chemical etching process with hydrofluoric acid (HF), ethanol (EtOH), and distilled water (d-H{sub 2}O). The results obtained from X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) indicate that the synthesized Si NCs obtained via ICP-CVD have diamond cubic-structured silicon with a grain size of 10 nm and a densely packed Si NC array consisting of individual NCs. Organo-functionalized Si NCs, i.e., ODE-Si NCs, are well soluble in organic solvent whereas pristine Si NCs synthesized through ICP-CVD are not. The surface chemistry of the ODE-Si NCs was confirmed via Fourier transform infrared spectroscopy (FT-IR), proton nuclear magnetic resonance spectroscopy ({sup 1}H-NMR), and field emission transmission electron microscopy (FE-TEM). Thereby, these newly synthesized and scalable organo-functionalized Si NCs are applicable as raw materials for practical use in devices by tuning the surface chemistry with various capping molecules.

XPS studies of SiO2 surface layers formed by oxygen ion implantation into silicon

International Nuclear Information System (INIS)

Schulze, D.; Finster, J.

1983-01-01

SiO 2 surface layers of 160 nm thickness formed by 16 O + ion implantation into silicon are examined by X-ray photoelectron spectroscopy measurements into the depth after a step-by-step chemical etching. The chemical nature and the thickness of the transition layer were determined. The results of the XPS measurements show that the outer surface and the bulk of the layers formed by oxygen implantation and subsequent high temperature annealing consist of SiO 2 . There is no evidence for Si or SiO/sub x/ (0 2 and Si is similar to that of thin grown oxide layers. Only its thickness is somewhat larger than in thermal oxide

Copper diffusion in Ti-Si-N layers formed by inductively coupled plasma implantation

International Nuclear Information System (INIS)

Ee, Y.C.; Chen, Z.; Law, S.B.; Xu, S.; Yakovlev, N.L.; Lai, M.Y.

2006-01-01

Ternary Ti-Si-N refractory barrier films of 15 nm thick was prepared by low frequency, high density, inductively coupled plasma implantation of N into Ti x Si y substrate. This leads to the formation of Ti-N and Si-N compounds in the ternary film. Diffusion of copper in the barrier layer after annealing treatment at various temperatures was investigated using time-of-flight secondary ion mass spectrometer (ToF-SIMS) depth profiling, X-ray diffractometer (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray (EDX) and sheet resistance measurement. The current study found that barrier failure did not occur until 650 deg. C annealing for 30 min. The failure occurs by the diffusion of copper into the Ti-Si-N film to form Cu-Ti and Cu-N compounds. FESEM surface morphology and EDX show that copper compounds were formed on the ridge areas of the Ti-Si-N film. The sheet resistance verifies the diffusion of Cu into the Ti-Si-N film; there is a sudden drop in the resistance with Cu compound formation. This finding provides a simple and effective method of monitoring Cu diffusion in TiN-based diffusion barriers

Forming-free performance of a-SiN x :H-based resistive switching memory obtained by oxygen plasma treatment

Science.gov (United States)

Zhang, Xinxin; Ma, Zhongyuan; Zhang, Hui; Liu, Jian; Yang, Huafeng; Sun, Yang; Tan, Dinwen; Li, Wei; Xu, Ling; Chen, Kuiji; Feng, Duan

2018-06-01

An a-SiN x -based resistive random access memory (RRAM) device with a forming-free characteristic has significant potentials for the industrialization of the next-generation memories. We demonstrate that a forming-free a-SiN x O y RRAM device can be achieved by an oxygen plasma treatment of ultra-thin a-SiN x :H films. Electron spin resonance spectroscopy reveals that Si dangling bonds with a high density (1019 cm‑3) are distributed in the initial state, which exist in the forms of Si2N≡Si·, SiO2≡Si·, O3≡Si·, and N3≡Si·. X-ray photoelectron spectroscopy and temperature-dependent current analyses reveal that the silicon dangling bonds induced by the oxygen plasma treatment and external electric field contribute to the low resistance state (LRS). For the high resistance state (HRS), the rupture of the silicon dangling bond pathway is attributed to the partial passivation of Si dangling bonds by H+ and O2‑. Both LRS and HRS transmissions obey the hopping conduction model. The proposed oxygen plasma treatment, introduced to generate a high density of Si dangling bonds in the SiN x O y :H films, provides a new approach to forming-free RRAM devices.

Violet-blue photoluminescence from Si nanoparticles with zinc-blende structure synthesized by laser ablation in liquids

Directory of Open Access Journals (Sweden)

P. Liu

2013-02-01

Full Text Available Violet-blue luminescence from Si nanostructures has been widely investigated, because of its potential use in optoelectronic and bioimaging devices. However, the emission mechanism in multiform Si nanomaterials remains unclear. In this contribution, Si nanocrystals (NCs with zincblende structure and visible violet-blue emission are prepared by electric field assisted laser ablation in liquids. While subsequent annealing of the Si NCs weakens their blue emission dramatically. We investigate the origin of the violet-blue emission by monitoring crystal structure transitions and photoluminescence during different treatments of the Si NCs. The results indicate that the violet-blue emission cannot simply be ascribed to quantum confinement effects or the presence of general surface states on the Si NCs. Instead, we propose that excitons are formed within the Si NCs by direct transitions at Γ or X points, which can be induced during the formation of the zincblende structure, and are a most possible origin of the violet-blue luminescence. Furthermore, defects in the metastable Si NCs are also expected to play an important role in violet-blue emission. This study not only gives clear and general insight into the physical origins of violet-blue emission from Si NCs, it also provides useful information for designing optoelectronic devices based on Si NCs.

Phase selection and microstructure in directional solidification of glass forming Pd-Si-Cu alloys

Science.gov (United States)

Huo, Yang

Phase selection and microstructure formation during the rapid solidification of alloy melts has been a topic of substantial interest over the last several decades, attributed mainly to the access to novel structures involving metastable crystalline and non-crystalline phases. In this work, Bridgeman type directional solidification was conducted in Pd-Si-Cu glass forming system to study such cooling rate dependent phase transition and microstructure formation. The equilibrium state for Pd-Si-Cu ternary system was investigated through three different works. First of all, phase stabilities for Pd-Si binary system was accessed with respects of first-principles and experiments, showing Pd5Si, Pd9Si2, Pd3Si and Pd 2Si phase are stable all way to zero Kevin while PdSi phase is a high temperature stable phase, and Pd2Si phase with Fe2P is a non-stoichiometry phase. A thermodynamic database was developed for Pd-Si system. Second, crystal structures for compounds with ternary compositions were studied by XRD, SEM and TEM, showing ordered and disordered B2/bcc phases are stable in Pd-rich part. At last, based on many phase equilibria and phase transitions data, a comprehensive thermodynamic discrption for Pd-Si-Cu ternary system was first time to be developed, from which different phase diagrams and driving force for kinetics can be calculated. Phase selection and microstructure formation in directional solidification of the best glass forming composition, Pd 77.5Si16.5Cu6, in this system with growth velocities from 0.005 to 7.5mm/s was systematically studied and the solidification pathways at different conditions were interpreted from thermodynamic simulation. The results show that for growth velocities are smaller than 0.1mm/s Pd 3Si phase is primary phase and Pd9Si2 phase is secondary phase, the difficulty for Pd9Si2 phase nucleation gives rise to the formation of two different eutectic structure. For growth velocities between 0.4 and 1mm/s, instead of Pd3Si phase, Pd9Si2

Microstructure of buried CoSi2 layers formed by high-dose Co implantation into (100) and (111) Si substrates

International Nuclear Information System (INIS)

Bulle-Lieuwma, C.W.T.; Van Ommen, A.H.; Vandenhoudt, D.E.W.; Ottenheim, J.J.M.; de Jong, A.F.

1991-01-01

Heteroepitaxial Si/CoSi 2 /Si structures have been synthesized by implanting 170-keV Co + with doses in the range 1--3x10 17 Co + ions/cm 2 into (100) and (111) Si substrates and subsequent annealing. The microstructure of both the as-implanted and annealed structures is investigated in great detail by transmission electron microscopy, high-resolution electron microscopy, and x-ray diffraction. In the as-implanted samples, the Co is present as CoSi 2 precipitates, occurring both in aligned (A-type) and twinned (B-type) orientation. For the highest dose, a continuous layer of stoichiometric CoSi 2 is already formed during implantation. It is found that the formation of a connected layer, already during implantation, is crucial for the formation of a buried CoSi 2 layer upon subsequent annealing. Particular attention is given to the coordination of the interfacial Co atoms at the Si/CoSi 2 (111) interfaces of both types of precipitates. We find that the interfacial Co atoms at the A-type interfaces are fully sevenfold coordinated, whereas at the B-type interfaces they appear to be eightfold coordinated

In situ development of self-reinforced cellulose nanocrystals based thermoplastic elastomers by atom transfer radical polymerization.

Science.gov (United States)

Yu, Juan; Wang, Chunpeng; Wang, Jifu; Chu, Fuxiang

2016-05-05

Recently, the utilization of cellulose nanocrystals (CNCs) as a reinforcing material has received a great attention due to its high elastic modulus. In this article, a novel strategy for the synthesis of self-reinforced CNCs based thermoplastic elastomers (CTPEs) is presented. CNCs were first surface functionalized with an initiator for surface-initiated atom transfer radical polymerization (SI-ATRP). Subsequently, SI-ATRP of methyl methacrylate (MMA) and butyl acrylate (BA) was carried out in the presence of sacrificial initiator to form CTPEs in situ. The CTPEs together with the simple blends of CNCs and linear poly(MMA-co-BA) copolymer (P(MMA-co-BA)) were characterized for comparative study. The results indicated that P(MMA-co-BA) was successfully grafted onto the surface of CNCs and the compatibility between CNCs and the polymer matrix in CTPEs was greatly enhanced. Specially, the CTPEs containing 2.15wt% CNCs increased Tg by 19.2°C and tensile strength by 100% as compared to the linear P(MMA-co-BA). Copyright © 2016 Elsevier Ltd. All rights reserved.

Phase transitions and doping in semiconductor nanocrystals

Science.gov (United States)

Sahu, Ayaskanta

Colloidal semiconductor nanocrystals are a promising technological material because their size-dependent optical and electronic properties can be exploited for a diverse range of applications such as light-emitting diodes, bio-labels, transistors, and solar cells. For many of these applications, electrical current needs to be transported through the devices. However, while their solution processability makes these colloidal nanocrystals attractive candidates for device applications, the bulky surfactants that render these nanocrystals dispersible in common solvents block electrical current. Thus, in order to realize the full potential of colloidal semiconductor nanocrystals in the next-generation of solid-state devices, methods must be devised to make conductive films from these nanocrystals. One way to achieve this would be to add minute amounts of foreign impurity atoms (dopants) to increase their conductivity. Electronic doping in nanocrystals is still very much in its infancy with limited understanding of the underlying mechanisms that govern the doping process. This thesis introduces an innovative synthesis of doped nanocrystals and aims at expanding the fundamental understanding of charge transport in these doped nanocrystal films. The list of semiconductor nanocrystals that can be doped is large, and if one combines that with available dopants, an even larger set of materials with interesting properties and applications can be generated. In addition to doping, another promising route to increase conductivity in nanocrystal films is to use nanocrystals with high ionic conductivities. This thesis also examines this possibility by studying new phases of mixed ionic and electronic conductors at the nanoscale. Such a versatile approach may open new pathways for interesting fundamental research, and also lay the foundation for the creation of novel materials with important applications. In addition to their size-dependence, the intentional incorporation of

Growth of Si nanocrystals on alumina and integration in memory devices

Science.gov (United States)

Baron, T.; Fernandes, A.; Damlencourt, J. F.; De Salvo, B.; Martin, F.; Mazen, F.; Haukka, S.

2003-06-01

We present a detailed study of the growth of Si quantum dots (Si QDs) by low pressure chemical vapor deposition on alumina dielectric deposited by atomic layer deposition. The Si QDs density is very high, 1012 cm-2, for a mean diameter between 5 and 10 nm. Al2O3/Si QD stacks have been integrated in memory devices as granular floating gate. The devices demonstrate good charge storage and data retention characteristics.

Ultrathin SiO{sub 2} layer formed by the nitric acid oxidation of Si (NAOS) method to improve the thermal-SiO{sub 2}/Si interface for crystalline Si solar cells

Energy Technology Data Exchange (ETDEWEB)

Matsumoto, Taketoshi; Nakajima, Hiroki; Irishika, Daichi; Nonaka, Takaaki; Imamura, Kentaro; Kobayashi, Hikaru, E-mail: h.kobayashi@sanken.osaka-u.ac.jp

2017-02-15

Highlights: • The density of interface states at the SiO{sub 2}/Si interface is decreased by NAOS. • The minority carrier lifetime is increased by the NAOS treatment. • Great interfacial properties of the NAOS layer are kept after thermal oxidation. - Abstract: A combination of the nitric acid oxidation of Si (NAOS) method and post-thermal oxidation is found to efficiently passivate the SiO{sub 2}/n-Si(100) interface. Thermal oxidation at 925 °C and annealing at 450 °C in pure hydrogen atmosphere increases the minority carrier lifetime by three orders of magnitude, and it is attributed to elimination of Si dangling bond interface states. Fabrication of an ultrathin, i.e., 1.1 nm, NAOS SiO{sub 2} layer before thermal oxidation and H{sub 2} annealing further increases the minority carrier lifetime by 30% from 8.6 to 11.1 ms, and decreased the interface state density by 10% from 6.9 × 10{sup 9} to 6.3 × 10{sup 9}eV{sup −1} cm{sup −2}. After thermal oxidation at 800 °C, the SiO{sub 2} layer on the NAOS-SiO{sub 2}/Si(100) structure is 2.26 nm thick, i.e., 0.24 nm thicker than that on the Si(100) surface, while after thermal oxidation at 925 °C, it is 4.2 nm thick, i.e., 0.4 nm thinner than that on Si(100). The chemical stability results from the higher atomic density of a NAOS SiO{sub 2} layer than that of a thermal oxide layer as reported in Ref. [28] (Asuha et al., 2002). Higher minority carrier lifetime in the presence of the NAOS layer indicates that the NAOS-SiO{sub 2}/Si interface with a low interface state density is preserved after thermal oxidation, which supports out-diffusion oxidation mechanism, by which a thermal oxide layer is formed on the NAOS SiO{sub 2} layer.

Patterned structures of in situ size controlled CdS nanocrystals in a polymer matrix under UV irradiation

International Nuclear Information System (INIS)

Fragouli, D; Pompa, P P; Caputo, G; Cingolani, R; Athanassiou, A; Resta, V; Laera, A M; Tapfer, L

2009-01-01

A method of in situ formation of patterns of size controlled CdS nanocrystals in a polymer matrix by pulsed UV irradiation is presented. The films consist of Cd thiolate precursors with different carbon chain lengths embedded in TOPAS polymer matrices. Under UV irradiation the precursors are photolyzed, driving to the formation of CdS nanocrystals in the quantum size regime, with size and concentration defined by the number of incident UV pulses, while the host polymer remains macroscopically/microscopically unaffected. The emission of the formed nanocomposite materials strongly depends on the dimensions of the CdS nanocrystals, thus, their growth at the different phases of the irradiation is monitored using spatially resolved photoluminescence by means of a confocal microscope. X-ray diffraction measurements verified the existence of the CdS nanocrystals, and defined their crystal structure for all the studied cases. The results are reinforced by transmission electron microscopy. It is proved that the selection of the precursor determines the efficiency of the procedure, and the quality of the formed nanocrystals. Moreover it is demonstrated that there is the possibility of laser induced formation of well-defined patterns of CdS nanocrystals, opening up new perspectives in the development of nanodevices.

Patterned structures of in situ size controlled CdS nanocrystals in a polymer matrix under UV irradiation

Energy Technology Data Exchange (ETDEWEB)

Fragouli, D; Pompa, P P; Caputo, G; Cingolani, R; Athanassiou, A [NNL-National Nanotechnology Laboratory, INFM, CNR, Via Arnesano, 73100 Lecce (Italy); Resta, V; Laera, A M; Tapfer, L [ENEA, Centro Ricerche Brindisi, SS7 Appia Km 706, I-72100 Brindisi (Italy)], E-mail: despina.fragouli@unile.it

2009-04-15

A method of in situ formation of patterns of size controlled CdS nanocrystals in a polymer matrix by pulsed UV irradiation is presented. The films consist of Cd thiolate precursors with different carbon chain lengths embedded in TOPAS polymer matrices. Under UV irradiation the precursors are photolyzed, driving to the formation of CdS nanocrystals in the quantum size regime, with size and concentration defined by the number of incident UV pulses, while the host polymer remains macroscopically/microscopically unaffected. The emission of the formed nanocomposite materials strongly depends on the dimensions of the CdS nanocrystals, thus, their growth at the different phases of the irradiation is monitored using spatially resolved photoluminescence by means of a confocal microscope. X-ray diffraction measurements verified the existence of the CdS nanocrystals, and defined their crystal structure for all the studied cases. The results are reinforced by transmission electron microscopy. It is proved that the selection of the precursor determines the efficiency of the procedure, and the quality of the formed nanocrystals. Moreover it is demonstrated that there is the possibility of laser induced formation of well-defined patterns of CdS nanocrystals, opening up new perspectives in the development of nanodevices.

Pulsed Laser Annealing of Thin Films of Self-Assembled Nanocrystals

KAUST Repository

Baumgardner, William J.

2011-09-27

We investigated how pulsed laser annealing can be applied to process thin films of colloidal nanocrystals (NCs) into interconnected nanostructures. We illustrate the relationship between incident laser fluence and changes in morphology of PbSe NC films relative to bulk-like PbSe films. We found that laser pulse fluences in the range of 30 to 200 mJ/cm2 create a processing window of opportunity where the NC film morphology goes through interesting transformations without large-scale coalescence of the NCs. NC coalescence can be mitigated by depositing a thin film of amorphous silicon (a-Si) on the NC film. Remarkably, pulsed laser annealing of the a-Si/PbSe NC films crystallized the silicon while NC morphology and translational order of the NC film are preserved. © 2011 American Chemical Society.

Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

International Nuclear Information System (INIS)

Choi, Sangmoo; Yang, Hyundeok; Chang, Man; Baek, Sungkweon; Hwang, Hyunsang; Jeon, Sanghun; Kim, Juhyung; Kim, Chungwoo

2005-01-01

Silicon nitride with silicon nanocrystals formed by low-energy silicon plasma immersion ion implantation has been investigated as a charge trapping layer of a polycrystalline silicon-oxide-nitride-oxide-silicon-type nonvolatile memory device. Compared with the control sample without silicon nanocrystals, silicon nitride with silicon nanocrystals provides excellent memory characteristics, such as larger width of capacitance-voltage hysteresis, higher program/erase speed, and lower charge loss rate at elevated temperature. These improved memory characteristics are derived by incorporation of silicon nanocrystals into the charge trapping layer as additional accessible charge traps with a deeper effective trap energy level

XPS studies of SiO/sub 2/ surface layers formed by oxygen ion implantation into silicon

Energy Technology Data Exchange (ETDEWEB)

Schulze, D.; Finster, J. (Karl-Marx-Universitaet, Leipzig (German Democratic Republic). Sektion Chemie); Hensel, E.; Skorupa, W.; Kreissig, U. (Zentralinstitut fuer Kernforschung, Rossendorf bei Dresden (German Democratic Republic))

1983-03-16

SiO/sub 2/ surface layers of 160 nm thickness formed by /sup 16/O/sup +/ ion implantation into silicon are examined by X-ray photoelectron spectroscopy measurements into the depth after a step-by-step chemical etching. The chemical nature and the thickness of the transition layer were determined. The results of the XPS measurements show that the outer surface and the bulk of the layers formed by oxygen implantation and subsequent high temperature annealing consist of SiO/sub 2/. There is no evidence for Si or SiO/sub x/ (0SiO/sub x/ transition region between SiO/sub 2/ and Si is similar to that of thin grown oxide layers. Only its thickness is somewhat larger than in thermal oxide.

Volumetric flame synthesis of well-defined molybdenum oxide nanocrystals.

Science.gov (United States)

Merchan-Merchan, Wilson; Saveliev, Alexei V; Desai, Milind

2009-11-25

Well-defined faceted inorganic Mo oxide nanocrystals are synthesized in the gas phase using a solid-fed-precursor flame synthesis method. The solid crystals have rectangular cross-section with characteristic size of 10-20 nm and with lengths ranging from 50 nm to a few hundred nanometres. A 1 mm diameter high purity Mo probe introduced in the oxygen-rich part of the flame serves as the material source. A combination of the strong temperature gradient and varying chemical species concentrations within the flame volume provides the ideal conditions for the rapid and direct formation of these unique nanocrystals. Oxidation and evaporation of MoO3 in the oxygen-rich zone are followed by reduction to MoO2 in the lower temperature, more fuel-rich zone. The MoO3 vapours formed are pushed in the direction of the gas flow and transformed into mature well-defined convex polyhedron nanocrystals bounded with six faces resembling rectangular parallelepipeds.

Effect of argon implantation on solid-state dewetting: control of size and surface density of silicon nanocrystals.

Science.gov (United States)

Almadori, Y; Borowik, Ł; Chevalier, N; Barbé, J-C

2017-01-27

Thermally induced solid-state dewetting of ultra-thin films on insulators is a process of prime interest, since it is capable of easily forming nanocrystals. If no particular treatment is performed to the film prior to the solid-state dewetting, it is already known that the size, the shape and the density of nanocrystals is governed by the initial film thickness. In this paper, we report a novel approach to control the size and the surface density of silicon nanocrystals based on an argon-implantation preliminary surface treatment. Using 7.5 nm thin layers of silicon, we show that increasing the implantation dose tends to form smaller silicon nanocrystals with diameter and height lower than 50 nm and 30 nm, respectively. Concomitantly, the surface density is increased by a factor greater than 20, going from 5 μm -2 to values over 100 μm -2 .

Measuring the Valence of Nanocrystal Surfaces

Energy Technology Data Exchange (ETDEWEB)

Owen, Jonathan Scharle [Columbia Univ., New York, NY (United States)

2016-11-30

The goal of this project is to understand and control the interplay between nanocrystal stoichiometry, surface ligand binding and exchange, and the optoelectronic properties of semiconductor nanocrystals in solution and in thin solid films. We pursued three research directions with this goal in mind: 1) We characterized nanocrystal stoichiometry and its influence on the binding of L-type and X-type ligands, including the thermodynamics of binding and the kinetics of ligand exchange. 2) We developed a quantitative understanding of the relationship between surface ligand passivation and photoluminescence quantum yield. 3) We developed methods to replace the organic ligands on the nanocrystal with halide ligands and controllably deposit these nanocrystals into thin films, where electrical measurements were used to investigate the electrical transport and internanocrystal electronic coupling.

Synthesis of Silicon Nanocrystals in Microplasma Reactor

Science.gov (United States)

Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

Nanocrystalline silicon particles with a grain size of at least less than 10 nm are widely recognized as one of the key materials in optoelectronic devices, electrodes of lithium battery, bio-medical labels. There is also important character that silicon is safe material to the environment and easily gets involved in existing silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. We explore the possibility of microplasma technologies for the efficient production of mono-dispersed nanocrystalline silicon particles in a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using very high frequency (VHF = 144 MHz) power source in a capillary glass tube with a volume of less than 1 μ-liter. Fundamental plasma parameters of VHF capacitively coupled microplasma were characterized by optical emission spectroscopy, showing electron density of approximately 1015 cm-3 and rotational temperature of 1500 K, respectively. Such high-density non-thermal reactive plasma has a capability of decomposing silicon tetrachloride into atomic silicon to produce supersaturated atomic silicon vapor, followed by gas phase nucleation via three-body collision. The particle synthesis in high-density plasma media is beneficial for promoting nucleation process. In addition, further growth of silicon nuclei was able to be favorably terminated in a short-residence time reactor. Micro Raman scattering spectrum showed that as-deposited particles were mostly amorphous silicon with small fraction of silicon nanocrystals. Transmission electron micrograph confirmed individual silicon nanocrystals of 3-15 nm size. Although those particles were not mono-dispersed, they were

SAXS and EXAFS studies of ion beam synthesized Au nanocrystals

International Nuclear Information System (INIS)

Kluth, P.; Johannessen, B.; Cookson, D.J.; Foran, G.J.; Ridgway, M.C.

2006-01-01

We have used small-angle X-ray scattering (SAXS) and extended X-ray absorption fine structure (EXAFS) spectroscopy to investigate Au nanocrystals (NCs) fabricated by high dose ion implantation into thin SiO 2 and subsequent annealing at different temperatures. Size distributions were determined from SAXS and structural parameters were extracted from EXAFS measurements, the latter analyzed as a function of NC size. Increasing implantation dose leads to an increasing average NC size and broadening of the size distribution. A significant size-dependent bond length contraction with respect to bulk material was observed. For samples annealed at 1100 deg. C our analysis suggests that an increased structural disorder is predominantly located at the NC surface. Post-implantation annealing at temperatures of 500 deg. C and 800 deg. C for 1 h in forming gas had no detectable influence on the NC size distribution, however, a significant influence on the structural parameters, in particular increased disorder was observed. This is potentially the result of stress induced disorder due to the different thermal expansion of the NC and matrix materials

Z-Contrast STEM Imaging and EELS of CdSe Nanocrystals: Towards the Analysis of Individual Nanocrystal Surfaces

International Nuclear Information System (INIS)

Erwin, M.; Kadavanich, A.V.; Kippeny, T.; Pennycook, S.J.; Rosenthal, S.J.

1999-01-01

We have applied Atomic Number Contract Scanning Transmission Electron Microscopy (Z-Contrast STEM) and STEM/EELS (Electron Energy Loss Spectroscopy) towards the study of colloidal CdSe semiconductor nanocrystals embedded in MEH-PPV polymer films. Unlike the case of conventional phase-contrast High Resolution TEM, Z-Contrast images are direct projections of the atomic structure. Hence they can be interpreted without the need for sophisticated image simulation and the image intensity is a direct measure of the thickness of a nanocrystal. Our thickness measurements are in agreement with the predicted faceted shape of these nanocrystals. Our unique 1.3A resolution STEM has successfully resolve3d the sublattice structure of these CdSe nanocrystals. In [010] projection (the polar axis in the image plane) we can distinguish Se atom columns from Cd columns. Consequently we can study the effects of lattice polarity on the nanocrystal morphology. Furthermore, since the STEM technique does not rely on diffraction, it is superbly suited to the study of non-periodic detail, such as the surface structure of the nanocrystals. EELS measurements on individual nanocrystals indicate a significant amount (equivalet to 0.5-1 surface monolayers) of oxygen on the nanocrystals, despite processing in an inert atmosphere. Spatially resolved measurements at 7A resolution suggest a surface oxide layer. However, the uncertainty in the measurement precludes definitive assignment at this time. The source of the oxygen is under investigation as well

Optical characterization of luminescent silicon nanocrystals embedded in glass matrices

Energy Technology Data Exchange (ETDEWEB)

Debieu, Olivier

2008-12-16

Interstellar dust in nebulae and in the Diffuse Interstellar Medium (DISM) of galaxies contains a component which exhibits efficient visible-near infrared luminescence ranging from 500 to 1000 nm, known as Extended Red Emission (ERE). Silicon nanocrystals (nc-Si) are discussed as possible carriers of the ERE. We employed the accelerator facilities of the Institute of Solid State Physics of the University of Jena to implant Si ions into fused silica windows. An excess concentration of silicon atoms is thus produced in the host SiO{sub 2} matrix which, by applying an annealing at 1100 C, condensates to silicon nanoparticles and crystallizes. Although the condensation and crystallization occur after an annealing of one minute,10, 15 the samples were annealed during one hour in order to well-passivate the nc-Si, that means, to reduce effectively the number of Si-dangling bonds at the nc-Si surface that are efficient non-radiative recombination centers. 10, 16 Upon excitation with UV light, most of our nc-Si/SiO{sub 2} samples revealed strong PL. We implanted into our luminescent nc-Si/SiO{sub 2} systems other atomic elements, as for instance magnesium and calcium, which form silicates if their oxide is combined with SiO{sub 2}. The purpose is to simulate the conditions for silicates containing nc-Si. In order to understand the effect of the incorporation of foreign atoms on the PL properties of our nc-Si/SiO{sub 2} systems, we proceeded to similar experiments with Er and Ge. As has been demonstrated by several authors, 17, 18 the presence of nc-Si in a glass matrix enhances considerably the emission of Er{sup 3+} ions at 1.536{mu}m. At the same time, the PL of nc-Si is considerably quenched. Since the solubility of Er in crystalline silicon is about 2 orders of magnitude lower than in SiO{sub 2}, the optically active Er{sup 3+} ions are believed to be localized outside the nc-Si core, demonstrating that ions present in the host SiO{sub 2} matrix influence the PL

Colloidal synthesis of Cu-ZnO and Cu@CuNi-ZnO hybrid nanocrystals with controlled morphologies and multifunctional properties

Science.gov (United States)

Zeng, Deqian; Gong, Pingyun; Chen, Yuanzhi; Zhang, Qinfu; Xie, Qingshui; Peng, Dong-Liang

2016-06-01

Metal-semiconductor hybrid nanocrystals have received extensive attention owing to their multiple functionalities which can find wide technological applications. The utilization of low-cost non-noble metals to construct novel metal-semiconductor hybrid nanocrystals is important and meaningful for their large-scale applications. In this study, a facile solution approach is developed for the synthesis of Cu-ZnO hybrid nanocrystals with well-controlled morphologies, including nanomultipods, core-shell nanoparticles, nanopyramids and core-shell nanowires. In the synthetic strategy, Cu nanocrystals formed in situ serve as seeds for the heterogeneous nucleation and growth of ZnO, and it eventually forms various Cu-ZnO hetero-nanostructures under different reaction conditions. These hybrid nanocrystals possess well-defined and stable heterostructure junctions. The ultraviolet-visible-near infrared spectra reveal morphology-dependent surface plasmon resonance absorption of Cu and the band gap absorption of ZnO. Furthermore, we construct a novel Cu@CuNi-ZnO ternary hetero-nanostructure by incorporating the magnetic metal Ni into the pre-synthesized colloidal Cu nanocrystals. Such hybrid nanocrystals possess a magnetic Cu-Ni intermediate layer between the ZnO shell and the Cu core, and exhibit ferromagnetic/superparamagnetic properties which expand their functionalities. Finally, enhanced photocatalytic activities are observed in the as-prepared non-noble metal-ZnO hybrid nanocrystals. This study not only provides an economical way to prepare high-quality morphology-controlled Cu-ZnO hybrid nanocrystals for potential applications in the fields of photocatalysis and photovoltaic devices, but also opens up new opportunities in designing ternary non-noble metal-semiconductor hybrid nanocrystals with multifunctionalities.Metal-semiconductor hybrid nanocrystals have received extensive attention owing to their multiple functionalities which can find wide technological applications

Nanocrystal thin film fabrication methods and apparatus

Science.gov (United States)

Kagan, Cherie R.; Kim, David K.; Choi, Ji-Hyuk; Lai, Yuming

2018-01-09

Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant such as Indium, Potassium, Tin, etc. to reduce surface states. The thin film devices may be exposed to air during a portion of the fabrication. This enables fabrication of nanocrystal-based devices using a wider range of techniques such as photolithography and photolithographic patterning in an air environment.

Photoluminescent silicon nanocrystals with chlorosilane surfaces - synthesis and reactivity

Science.gov (United States)

Höhlein, Ignaz M. D.; Kehrle, Julian; Purkait, Tapas K.; Veinot, Jonathan G. C.; Rieger, Bernhard

2014-12-01

We present a new efficient two-step method to covalently functionalize hydride terminated silicon nanocrystals with nucleophiles. First a reactive chlorosilane layer was formed via diazonium salt initiated hydrosilylation of chlorodimethyl(vinyl)silane which was then reacted with alcohols, silanols and organolithium reagents. With organolithium compounds a side reaction is observed in which a direct functionalization of the silicon surface takes place.We present a new efficient two-step method to covalently functionalize hydride terminated silicon nanocrystals with nucleophiles. First a reactive chlorosilane layer was formed via diazonium salt initiated hydrosilylation of chlorodimethyl(vinyl)silane which was then reacted with alcohols, silanols and organolithium reagents. With organolithium compounds a side reaction is observed in which a direct functionalization of the silicon surface takes place. Electronic supplementary information (ESI) available: Detailed experimental procedures and additional NMR, PL, EDX, DLS and TEM data. See DOI: 10.1039/C4NR05888G

Simple eco-friendly synthesis of the surfactant free SnS nanocrystal toward the photoelectrochemical cell application.

Science.gov (United States)

Huang, Xiaoguang; Woo, Heechul; Wu, Peinian; Hong, Hyo Jin; Jung, Wan Gil; Kim, Bong-Joong; Vanel, Jean-Charles; Choi, Jin Woo

2017-11-28

A simple, low cost, non-toxic and eco-friendly pathway for synthesizing efficient sunlight-driven tin sulfide photocatalyst was studied. SnS nanocrystals were prepared by using mechanical method. The bulk SnS was obtained by evaporation of SnS nanocrystal solution. The synthesized samples were characterized by using XRD, SEM, TEM, UV-vis, and Raman analyses. Well crystallized SnS nanocrystals were verified and the electrochemical characterization was also performed under visible light irradiation. The SnS nanocrystals have shown remarkable photocurrent density of 7.6 mA cm -2 under 100 mW cm -2 which is about 10 times larger than that of the bulk SnS under notably stable operation conditions. Furthermore, the SnS nanocrystals presented higher stability than the bulk form. The IPCE(Incident photon to current conversion efficiency) of 9.3% at 420 nm was obtained for SnS nanocrystal photoanode which is strikingly higher than that of bulk SnS, 0.78%. This work suggests that the enhancement of reacting area by using SnS nanocrystal absorbers could give rise to the improvement of photoelectrochemical cell efficiency.

X-Ray Absorption Studies of Vanadium-Containing Metal Oxide Nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Hohn, Keith, L.

2006-01-09

Metal oxide nanocrystals offer significant potential for use as catalysts or catalyst supports due to their high surface areas and unique chemical properties that result from the high number of exposed corners and edges. However, little is known about the catalytic activity of these materials, especially as oxidation catalysts. This research focused on the preparation, characterization and use of vanadium-containing nanocrystals as selective oxidation catalysts. Three vanadium-containing nanocrystals were prepared using a modified sol-gel procedure: V/MgO, V/SiO2, and vanadium phosphate (VPO). These represent active oxidation catalysts for a number of industrially relevant reactions. The catalysts were characterized by x-ray diffraction and Raman, UV-VIS, infrared and x-ray absorption spectroscopies with the goal of determining the primary structural and chemical differences between nanocrystals and microcrystals. The catalytic activity of these catalysts was also studied in oxidative dehydrogenation of butane and methanol oxidation to formaldehyde. V/MgO nanocrystals were investigated for activity in oxidative dehydrogenation of butane and compared to conventional V/MgO catalysts. Characterization of V/MgO catalysts using Raman spectroscopy and x-ray absorption spectroscopy showed that both types of catalysts contained magnesium orthovanadate at vanadium loadings below 15 weight%, but above that loading, magnesium pyrovanadate may have been present. In general, MgO nanocrystals had roughly half the crystal size and double the surface area of the conventional MgO. In oxidative dehydrogenation of butane, nanocrystalline V/MgO gave higher selectivity to butene than conventional V/MgO at the same conversion. This difference was attributed to differences in vanadium domain size resulting from the higher surface areas of the nanocrystalline support, since characterization suggested that similar vanadium phases were present on both types of catalysts. Experiments in

Engineering of lipid-coated PLGA nanoparticles with a tunable payload of diagnostically active nanocrystals for medical imaging.

Science.gov (United States)

Mieszawska, Aneta J; Gianella, Anita; Cormode, David P; Zhao, Yiming; Meijerink, Andries; Langer, Robert; Farokhzad, Omid C; Fayad, Zahi A; Mulder, Willem J M

2012-06-14

Polylactic-co-glycolic acid (PLGA) based nanoparticles are biocompatible and biodegradable and therefore have been extensively investigated as therapeutic carriers. Here, we engineered diagnostically active PLGA nanoparticles that incorporate high payloads of nanocrystals into their core for tunable bioimaging features. We accomplished this through esterification reactions of PLGA to generate polymers modified with nanocrystals. The PLGA nanoparticles formed from modified PLGA polymers that were functionalized with either gold nanocrystals or quantum dots exhibited favorable features for computed tomography and optical imaging, respectively.

Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition

Czech Academy of Sciences Publication Activity Database

Klenovský, P.; Brehm, M.; Křápek, Vlastimil; Lausecker, E.; Munzar, D.; Hackl, F.; Steiner, H.; Fromherz, T.; Bauer, G.; Humlíček, J.

2012-01-01

Roč. 86, č. 11 (2012), "115305-1"-"115305-8" ISSN 1098-0121 Institutional research plan: CEZ:AV0Z10100521 Keywords : semiconductors nanocrystals * cyclotron resonance * uniaxial-stress * band alignment * Ge islands * germanium * wells * silicon * Si(001) * luminescence Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.767, year: 2012 http://prb.aps.org/abstract/PRB/v86/i11/e115305

Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure.

Science.gov (United States)

Huang, Zhong-Mei; Huang, Wei-Qi; Dong, Tai-Ge; Wang, Gang; Wu, Xue-Ke

2016-12-01

It is very interesting that the enhanced peaks near 1150 and 1550 nm are observed in the photoluminescence (PL) spectra in the quantum system of Si-Ge nanolayer structure, which have the emission characteristics of a three-level system with quantum dots (QDs) pumping and emission of quasi-direct-gap band, in our experiment. In the preparing process of Si-Ge nanolayer structure by using a pulsed laser deposition method, it is discovered that the nanocrystals of Si and Ge grow in the (100) and (111) directions after annealing or electron beam irradiation. The enhanced PL peaks with multi-longitudinal-mode are measured at room temperature in the super-lattice of Si-Ge nanolayer quantum system on SOI.

Spectroscopic properties of Er3+ and Yb3+ co-doped glass ceramics containing SrF2 nanocrystals

International Nuclear Information System (INIS)

Qiao Xvsheng; Fan Xianping; Wang Minquan; Zhang Xianghua

2009-01-01

The spectroscopic properties of Er 3+ /Yb 3+ co-doped 50SiO 2 -10Al 2 O 3 -20ZnF 2 -20SrF 2 glass and glass ceramic containing SrF 2 nanocrystals were investigated. The formation of SrF 2 nanocrystals in the glass ceramic was confirmed by XRD. The oscillator strengths for several transitions of the Er 3+ ions in the glass ceramic have been obtained and the Judd-Ofelt parameters were then determined. The XRD result and Judd-Ofelt parameters suggested that Er 3+ and Yb 3+ ions had efficiently enriched in the SrF 2 nanocrystals in the glass ceramic. The lifetime of excited states has been used to reveal the surroundings of luminescent Er 3+ and Yb 3+ and energy transfer (ET) mechanism between Er 3+ and Yb 3+ . Much stronger upconversion luminescence and longer lifetime of the Er 3+ /Yb 3+ co-doped glass ceramic were observed in comparison with the Er 3+ /Yb 3+ co-doped glass, which could be ascribed to more efficient ET from Yb 3+ to Er 3+ due to the enrichment of Yb 3+ and Er 3+ and the shortening of the distance between lanthanide ions in the precipitated SrF 2 nanocrystals.

Electronic displays using optically pumped luminescent semiconductor nanocrystals

Science.gov (United States)

Weiss, Shimon [Pinole, CA; Schlamp, Michael C [Plainsboro, NJ; Alivisatos, A Paul [Oakland, CA

2011-09-27

A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

Preparation and nonlinear optical properties of indium nanocrystals in sodium borosilicate glass by the sol–gel route

International Nuclear Information System (INIS)

Zhong, Jiasong; Xiang, Weidong; Zhao, Haijun; Chen, Zhaoping; Liang, Xiaojuan; Zhao, Wenguang; Chen, Guoxin

2012-01-01

Graphical abstract: The sodium borosilicate glass doped with indium nanocrystals have been successfully prepared by sol–gel methods. And the indium nanocrystals in tetragonal crystal system have formed uniformly in the glass, and the average diameter of indium nanocrystals is about 30 nm. The third-order optical nonlinear refractive index γ, absorption coefficient β, and susceptibility χ (3) of the glass are determined to be −4.77 × 10 −16 m 2 /W, 2.67 × 10 −9 m/W, and 2.81 × 10 −10 esu, respectively. Highlights: ► Indium nanocrystals embedded in glass matrix have been prepared by sol–gel route. ► The crystal structure and composition are investigated by XRD and XPS. ► Size and distribution of indium nanocrystals is determined by TEM. ► The third-order optical nonlinearity is investigated by using Z-scan technique. -- Abstract: The sodium borosilicate glass doped with indium nanocrystals have been successfully prepared by sol–gel route. The thermal stability behavior of the stiff gel is investigated by thermogravimetric (TG) and differential thermal (DTA) analysis. The crystal structure of the glass is characterized by X-ray powder diffraction (XRD). Particle composition is determined by X-ray photoelectron spectroscopy (XPS). Size and distribution of the nanocrystals are characterized by transmission electron microscopy (TEM) as well as high-resolution transmission electron microscopy (HRTEM). Results show that the indium nanocrystals in tetragonal crystal structure have formed in glass, and the average diameter is about 30 nm. Further, the glass is measured by Z-scan technique to investigate the nonlinear optical (NLO) properties. The third-order NLO coefficient χ (3) of the glass is determined to be 2.81 × 10 −10 esu. The glass with large third-order NLO coefficient is promising materials for applications in optical devices.

New crystal structures in hexagonal CuInS2 nanocrystals

Science.gov (United States)

Shen, Xiao; Hernández-Pagan, Emil A.; Zhou, Wu; Puzyrev, Yevgeniy S.; Idrobo, Juan C.; MacDonald, Janet E.; Pennycook, Stephen J.; Pantelides, Sokrates T.

2013-03-01

CuInS2 is one of the best candidate materials for solar energy harvesting. Its nanocrystals with a hexagonal lattice structure that is different from the bulk chalcopyrite phase have been synthesized by many groups. The structure of these CuInS2 nanocrystals has been previously identified as the wurtzite structure in which the copper and indium atoms randomly occupy the cation sites. Using first-principles total energy and electronic structure calculations based on density functional theory, UV-vis absorption spectroscopy, X-ray diffraction, and atomic resolution Z-contrast images obtained in an aberration-corrected scanning transmission electron microscope, we show that CuInS2 nanocrystals do not form random wurtzite structure. Instead, the CuInS2 nanocrystals consist of several wurtzite- related crystal structures with ordered cation sublattices, some of which are reported for the first time here. This work is supported by the NSF TN-SCORE (JEM), by NSF (WZ), by ORNL's Shared Research Equipment User Program (JCI) sponsored by DOE BES, by DOE BES Materials Sciences and Engineering Division (SJP, STP), and used resources of the National Energy Research Scientific Computing Center, supported by the DOE Office of Science under Contract No. DE-AC02-05CH11231.

Bright trions in direct-bandgap silicon nanocrystals revealed bylow-temperature single-nanocrystal spectroscopy

Czech Academy of Sciences Publication Activity Database

Kůsová, Kateřina; Pelant, Ivan; Valenta, J.

2015-01-01

Roč. 4, Oct (2015), e336 ISSN 2047-7538 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA ČR GPP204/12/P235 Institutional support: RVO:68378271 Keywords : silicon nanocrystals * single-nanocrystal spectroscopy * luminescing trions Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 13.600, year: 2015

Role of the inversion layer on the charge injection in silicon nanocrystal multilayered light emitting devices

Energy Technology Data Exchange (ETDEWEB)

Tondini, S. [Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, 38123 Trento (Italy); Dipartimento di Fisica, Informatica e Matematica, Università di Modena e Reggio Emilia, Via Campi 213/a, 41125 Modena (Italy); Pucker, G. [Advanced Photonics and Photovoltaics Group, Bruno Kessler Foundation, Via Sommarive 18, 38123 Trento (Italy); Pavesi, L. [Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, 38123 Trento (Italy)

2016-09-07

The role of the inversion layer on injection and recombination phenomena in light emitting diodes (LEDs) is here studied on a multilayer (ML) structure of silicon nanocrystals (Si-NCs) embedded in SiO{sub 2}. Two Si-NC LEDs, which are similar for the active material but different in the fabrication process, elucidate the role of the non-radiative recombination rates at the ML/substrate interface. By studying current- and capacitance-voltage characteristics as well as electroluminescence spectra and time-resolved electroluminescence under pulsed and alternating bias pumping scheme in both the devices, we are able to ascribe the different experimental results to an efficient or inefficient minority carrier (electron) supply by the p-type substrate in the metal oxide semiconductor LEDs.

Investigation of the atomic interface structure of mesotaxial Si/CoSi2(100) layers formed by high-dose implantation

International Nuclear Information System (INIS)

Bulle-Lieuwma, C.W.T.; Jong, A.F. de; Vandenhoudt, D.E.W.

1991-01-01

Aligned mesotaxial films of CoSi 2 in monocrystalline (100) oriented Si substrates have been formed by high-dose ion implantation of Co, followed by a high temperature treatment. The atomic structures of both the lower and upper Si/CoSi 2 (100) interfaces of the buried CoSi 2 layer have been investigated by high-resolution electron microscopy (HREM) combined with image simulations. A domain-like structure is observed consisting of areas with different interfaces. In order to derive the atomic configuration, image simulations of different proposed models are presented. By comparing simulated images and HREM images, two different atomic structure models for the Si/CoSi 2 (100) interface have been found. In the first model the interfacial Co atoms are six-fold coordinated and the tetrahedral coordination and bond lengths of silicon atoms are everywhere maintained. In the second model we found evidence for a 2 x 1 interface reconstruction, involving a difference in composition. The interfacial Co atoms are seven-fold coordinated. It is shown that the boundaries between the domains are associated with interfacial dislocations of edge-type with Burgers vectors b a/4 inclined and b = a/2 parallel to the interfacial plane. (author)

Red-luminescence band: A tool for the quality assessment of germanium and silicon nanocrystals

Science.gov (United States)

Fraj, I.; Favre, L.; David, T.; Abbarchi, M.; Liu, K.; Claude, J. B.; Ronda, A.; Naffouti, M.; Saidi, F.; Hassen, F.; Maaref, H.; Aqua, J. N.; Berbezier, I.

2017-10-01

We present the photoluminescence (PL) emission of Silicon and Germanium nanocrystals (NCs) of different sizes embedded in two different matrices. Formation of the NCs is achieved via solid-state dewetting during annealing in a molecular beam epitaxy ultra-high vacuum system of ultrathin amorphous Si and Ge layers deposited at room temperature on SiO2. During the dewetting process, the bi-dimensional amorphous layers transform into small pseudo-spherical islands whose mean size can be tuned directly with the deposited thickness. The nanocrystals are capped either ex situ by silicon dioxide or in situ by amorphous Silicon. The surface-state dependent emission (typically in the range 1.74 eV-1.79 eV) exhibited higher relative PL quantum yields compared to the emission originating from the band gap transition. This red-PL emission comes from the radiative transitions between a Si band and an interface level. It is mainly ascribed to the NCs and environment features deduced from morphological and structural analyses. Power dependent analysis of the photoluminescence intensity under continuous excitation reveals a conventional power law with an exponent close to 1, in agreement with the type II nature of the emission. We show that Ge-NCs exhibit much lower quantum efficiency than Si-NCs due to non-radiative interface states. Low quantum efficiency is also obtained when NCs have been exposed to air before capping, even if the exposure time is very short. Our results indicate that a reduction of the non-radiative surface states is a key strategy step in producing small NCs with increased PL emission for a variety of applications. The red-PL band is then an effective tool for the quality assessment of NCs based structures.

Coulomb gap triptych in a periodic array of metal nanocrystals.

Science.gov (United States)

Chen, Tianran; Skinner, Brian; Shklovskii, B I

2012-09-21

The Coulomb gap in the single-particle density of states (DOS) is a universal consequence of electron-electron interaction in disordered systems with localized electron states. Here we show that in arrays of monodisperse metallic nanocrystals, there is not one but three identical adjacent Coulomb gaps, which together form a structure that we call a "Coulomb gap triptych." We calculate the DOS and the conductivity in two- and three-dimensional arrays using a computer simulation. Unlike in the conventional Coulomb glass models, in nanocrystal arrays the DOS has a fixed width in the limit of large disorder. The Coulomb gap triptych can be studied via tunneling experiments.

Manipulating emission of CdSe/ZnS nanocrystals embedded in synthetic opals

International Nuclear Information System (INIS)

Benalloul, Paul; Vion, Celine; Barthou, Charles; Schwob, Catherine; Frigerio, Jean-Marc; MaItre, Agnes; Gruzintsev, Alex; Emelchenko, Gennadi; Masalov, Wladimir; Nga, Pham Thu

2009-01-01

Photonic crystals (PCs) are the object of great interest due to the possibility, for appropriate PCs, to modify and control light propagation and even to influence the emission properties of an emitter, such as its emission diagram and its life time. One of the most common approaches to prepare 3D PCs takes advantage of the spontaneous self-organisation of spherical colloidal particles. Various self-assembly techniques such as sedimentation, convective or Langmuir-Blodgett ones have been studied as they provide a low cost and relatively easy protocol to obtain artificial opals. SiO 2 opals exhibit a pseudo-band gap. Nevertheless the coupling of II-VI nanocrystal emitters in such PCs allows one to recognize and study some basic problems. Large opals have been prepared by the sedimentation method and the size of the balls has been adjusted so that the pseudo-band gap of those PCs lies in the same region as the emission band of CdSe/ZnS nanocrystals. Diagrams of radiation and the modification of the spontaneous life time of the embedded nanocrystals will be presented and discussed. Introducing well-defined defects in PCs which are necessary to guide the photons through the crystal remains a hard technological challenge. Several top-down methods have been investigated. We will present different bottom-up routes proposed by different groups to engineer planar defects into colloidal PCs.

Silicon nanocrystals embedded in silicon carbide for tandem solar cell applications

International Nuclear Information System (INIS)

Schnabel, Manuel

2015-01-01

Tandem solar cells consist of multiple individual solar cells stacked in order of increasing bandgap, with the cell with highest bandgap towards the incident light. This allows photons to be absorbed in the cell that will convert them to electricity with the greatest efficiency, and is the only solar cell concept to surpass the theoretical efficiency limit of a conventional solar cell so far. This work is concerned with the development of silicon nanocrystals (Si NCs) embedded in silicon carbide, which are expected to have a higher bandgap than bulk Si due to quantum confinement, for use in the top cell of a two-junction tandem cell. Charge carrier transport and recombination were investigated as a function of various parameters. Distortion of luminescence spectra by optical interference was highlighted and a robust model to describe transport of majority carriers was developed. Furthermore, a range of processing steps required to produce a Si NC-based tandem cell were studied, culminating in the preparation of the first Si NC-based tandem cells. The resulting cells exhibited open-circuit voltages of 900 mV, demonstrating tandem cell functionality.

Optical properties of Ag nanoclusters formed by irradiation and annealing of SiO{sub 2}/SiO{sub 2}:Ag thin films

Energy Technology Data Exchange (ETDEWEB)

Güner, S., E-mail: sguner@fatih.edu.tr [Department of Physics, Fatih University, 34500 Büyükçekmece, İstanbul (Turkey); Budak, S. [Department of Electrical Engineering and Computer Science, Alabama A and M University, Huntsville, AL 35810 (United States); Gibson, B. [Department of Physics, UAH, Huntsville, AL 35899 (United States); Ila, D. [Department of Chemistry and Physics, Fayetteville St. University, Fayetteville, NC 28301 (United States)

2014-08-15

Highlights: • Fabrication of films through the Reactive Electron Beam deposition technique. • Perfect and reproducible Ag nanoclustered host matrix. • Potential technological applicability in thermoelectric devices. - Abstract: We have deposited five periodic SiO{sub 2}/SiO{sub 2} + Ag multi-nano-layered films on fused silica substrates using physical vapor deposition technique. The co-deposited SiO{sub 2}:Ag layers were 2.7–5 nm and SiO{sub 2} buffer layers were 1–15 nm thick. Total thickness was between 30 and 105 nm. Different concentrations of Ag, ranging from 1.5 to 50 molecular% with respect to SiO{sub 2} were deposited to determine relevant rates of nanocluster formation and occurrence of interaction between nanoclusters. Using interferometry as well as in situ thickness monitoring, we measured the thickness of the layers. The concentration of Ag in SiO{sub 2} was measured with Rutherford Backscattering Spectrometry (RBS). To nucleate Ag nanoclusters, 5 MeV cross plane Si ion bombardments were performed with fluence varying between 5 × 10{sup 14} and 1 × 10{sup 16} ions/cm{sup 2} values. Optical absorption spectra were recorded in the range of 200–900 nm in order to monitor the Ag nanocluster formation in the thin films. Thermal annealing treatment at different temperatures was applied as second method to form varying size of nanoclusters. The physical properties of formed super lattice were criticized for thermoelectric applications.

Luminescence in colloidal Mn2+-doped semiconductor nanocrystals

International Nuclear Information System (INIS)

Beaulac, Remi; Archer, Paul I.; Gamelin, Daniel R.

2008-01-01

Recent advances in nanocrystal doping chemistries have substantially broadened the variety of photophysical properties that can be observed in colloidal Mn 2+ -doped semiconductor nanocrystals. A brief overview is provided, focusing on Mn 2+ -doped II-VI semiconductor nanocrystals prepared by direct chemical synthesis and capped with coordinating surface ligands. These Mn 2+ -doped semiconductor nanocrystals are organized into three major groups according to the location of various Mn 2+ -related excited states relative to the energy gap of the host semiconductor nanocrystals. The positioning of these excited states gives rise to three distinct relaxation scenarios following photoexcitation. A brief outlook on future research directions is provided. - Graphical abstract: Mn 2+ -doped semiconductor nanocrystals are organized into three major groups according to the location of various Mn 2+ -related excited states relative to the energy gap of the host semiconductor nanocrystals. The positioning of these excited states gives rise to three distinct relaxation scenarios following photoexcitation

Electronic structure and self-assembly of cross-linked semiconductor nanocrystal arrays

International Nuclear Information System (INIS)

Steiner, Dov; Azulay, Doron; Aharoni, Assaf; Salant, Assaf; Banin, Uri; Millo, Oded

2008-01-01

We studied the electronic level structure of assemblies of InAs quantum dots and CdSe nanorods cross-linked by 1,4-phenylenediamine molecules using scanning tunneling spectroscopy. We found that the bandgap in these arrays is reduced with respect to the corresponding ligand-capped nanocrystal arrays. In addition, a pronounced sub-gap spectral structure commonly appeared which can be attributed to unpassivated nanocrystal surface states or associated with linker-molecule-related levels. The exchange of the ligands by the linker molecules also affected the structural array properties. Most significantly, clusters of close-packed standing CdSe nanorods were formed

Formation and transformation of the radiation-induced nearsurface color centers in sodium and lithium fluorides nanocrystals

Science.gov (United States)

Novikov, A. N.; Kalinov, V. S.; Radkevich, A. V.; Runets, L. P.; Stupak, A. P.; Voitovich, A. P.

2017-11-01

Near-surface color centers in sodium fluoride nanocrystals have been formed. At pre-irradiation annealing of sodium and lithium fluorides samples at temperatures of 623 K and above, the near-surface color centers in them have not been found after γ-irradiation. Annealing lithium fluoride nanocrystals with the near-surface defects leads to their transformation into bulk ones of the same composition.

Characterization of Silicon Nanocrystal Surfaces by Multidimensional Solid-State NMR Spectroscopy

International Nuclear Information System (INIS)

Hanrahan, Michael P.; Fought, Ellie L.; Windus, Theresa L.; Wheeler, Lance M.; Anderson, Nicholas C.

2017-01-01

The chemical and photophysical properties of silicon nanocrystals (Si NCs) are strongly dependent on the chemical composition and structure of their surfaces. Here we use fast magic angle spinning (MAS) and proton detection to enable the rapid acquisition of dipolar and scalar 2D 1 H– 29 Si heteronuclear correlation (HETCOR) solid-state NMR spectra and reveal a molecular picture of hydride-terminated and alkyl-functionalized surfaces of Si NCs produced in a nonthermal plasma. 2D 1 H– 29 Si HETCOR and dipolar 2D 1 H– 1 H multiple-quantum correlation spectra illustrate that resonances from surface mono-, di-, and trihydride groups cannot be resolved, contrary to previous literature assignments. Instead the 2D NMR spectra illustrate that there is large distribution of 1 H and 29 Si chemical shifts for the surface hydride species in both the as-synthesized and functionalized Si NCs. However, proton-detected 1 H– 29 Si refocused INEPT experiments can be used to unambiguously differentiate NMR signals from the different surface hydrides. Varying the 29 Si evolution time in refocused INEPT experiments and fitting the oscillation of the NMR signals allows for the relative populations of the different surface hydrides to be estimated. This analysis confirms that monohydride species are the predominant surface species on the as-synthesized Si NCs. A reduction in the populations of the di- and trihydrides is observed upon functionalization with alkyl groups, consistent with our previous hypothesis that the trihydride, or silyl (*SiH 3 ), group is primarily responsible for initiating surface functionalization reactions. Density functional theory (DFT) calculations were used to obtain quantum chemical structural models of the Si NC surface and reproduce the observed 1 H and 29 Si chemical shifts. Furthermore, the approaches outlined here will be useful to obtain a more detailed picture of surface structures for Si NCs and other hydride-passivated nanomaterials.

Plasmonic light-sensitive skins of nanocrystal monolayers

Science.gov (United States)

Akhavan, Shahab; Gungor, Kivanc; Mutlugun, Evren; Demir, Hilmi Volkan

2013-04-01

We report plasmonically coupled light-sensitive skins of nanocrystal monolayers that exhibit sensitivity enhancement and spectral range extension with plasmonic nanostructures embedded in their photosensitive nanocrystal platforms. The deposited plasmonic silver nanoparticles of the device increase the optical absorption of a CdTe nanocrystal monolayer incorporated in the device. Controlled separation of these metallic nanoparticles in the vicinity of semiconductor nanocrystals enables optimization of the photovoltage buildup in the proposed nanostructure platform. The enhancement factor was found to depend on the excitation wavelength. We observed broadband sensitivity improvement (across 400-650 nm), with a 2.6-fold enhancement factor around the localized plasmon resonance peak. The simulation results were found to agree well with the experimental data. Such plasmonically enhanced nanocrystal skins hold great promise for large-area UV/visible sensing applications.

Influence of Substrate on Crystal Orientation of Large-Grained Si Thin Films Formed by Metal-Induced Crystallization

Directory of Open Access Journals (Sweden)

Kaoru Toko

2015-01-01

Full Text Available Producing large-grained polycrystalline Si (poly-Si film on glass substrates coated with conducting layers is essential for fabricating Si thin-film solar cells with high efficiency and low cost. We investigated how the choice of conducting underlayer affected the poly-Si layer formed on it by low-temperature (500°C Al-induced crystallization (AIC. The crystal orientation of the resulting poly-Si layer strongly depended on the underlayer material: (100 was preferred for Al-doped-ZnO (AZO and indium-tin-oxide (ITO; (111 was preferred for TiN. This result suggests Si heterogeneously nucleated on the underlayer. The average grain size of the poly-Si layer reached nearly 20 µm for the AZO and ITO samples and no less than 60 µm for the TiN sample. Thus, properly electing the underlayer material is essential in AIC and allows large-grained Si films to be formed at low temperatures with a set crystal orientation. These highly oriented Si layers with large grains appear promising for use as seed layers for Si light-absorption layers as well as for advanced functional materials.

Precipitation-lyophilization-homogenization (PLH) for preparation of clarithromycin nanocrystals: influencing factors on physicochemical properties and stability.

Science.gov (United States)

Morakul, Boontida; Suksiriworapong, Jiraphong; Leanpolchareanchai, Jiraporn; Junyaprasert, Varaporn Buraphacheep

2013-11-30

Nanocrystals is one of effective technologies used to improve solubility and dissolution behavior of poorly soluble drugs. Clarithromycin is classified in BCS class II having low bioavailability due to very low dissolution behavior. The main purpose of this study was to investigate an efficiency of clarithromycin nanocrystals preparation by precipitation-lyophilization-homogenization (PLH) combination method in comparison with high pressure homogenization (HPH) method. The factors influencing particle size reduction and physical stability were assessed. The results showed that the PLH technique provided an effective and rapid reduction of particle size of nanocrystals to 460 ± 10 nm with homogeneity size distribution after only the fifth cycle of homogenization, whereas the same size was attained after 30 cycles by the HPH method. The smallest nanocrystals were achieved by using the combination of poloxamer 407 (2%, w/v) and SLS (0.1%, w/v) as stabilizers. This combination could prevent the particle aggregation over 3-month storage at 4 °C. The results from SEM showed that the clarithromycin nanocrystals were in cubic-shaped similar to its initial particle morphology. The DSC thermogram and X-ray diffraction pattern of nanocrystals were not different from the original drug except for intensity of peaks which indicated the presenting of nanocrystals in the crystalline state and/or partial amorphous form. In addition, the dissolution of the clarithromycin nanocrystals was dramatically increased as compared to the coarse clarithromycin. Copyright © 2013 Elsevier B.V. All rights reserved.

Synthesis of optimized indium phosphide/zinc sulfide core/shell nanocrystals and titanium dioxide nanotubes for quantum dot sensitized solar cells

Science.gov (United States)

Lee, Seungyong

Synthesis of InP/ZnS core/shell nanocrystals and TiO 2 nanotubes and the optimization study to couple them together were explored for quantum dot sensitized solar cells. Its intrinsic nontoxicity makes the direct band gap InP/ZnS core/shell be one of the most promising semiconductor nanocrystals for optoelectric applications, with the advantage of tuning the optical absorption range in the desired solar spectrum region. Highly luminescent and monodisperse InP/ZnS nanocrystals were synthesized in a non-coordinating solvent. By varying the synthesis scheme, different size InP/ZnS nanocrystals with emission peaks ranging from 520 nm to 620 nm were grown. For the purpose of ensuring air stability, a ZnS shell was grown. The ZnS shell improves the chemical stability in terms of oxidation prevention. Transmission electron microscopy (TEM) image shows that the nanocrystals are highly crystalline and monodisperse. Free-standing TiO2 nanotubes were produced by an anodization method using ammonium fluoride. The free-standing nanotubes were formed under the condition that the chemical dissolution speed associated with fluoride concentration was faster than the speed of Ti oxidation. Highly ordered free-standing anatase form TiO2 nanotubes, which are transformed by annealing at the optimized temperature, are expected to be ideal for coupling with the prepared InP/ZnS nanocrystals. Electrophoretic deposition was carried out to couple the InP/ZnS nanocrystals with the TiO2 nanotubes. Under the adjusted applied voltage condition, the current during the electrophoretic deposition decreased continuously with time. The amount of the deposited nanocrystals was estimated by calculation and the evenly deposited nanocrystals on the TiO2 nanotubes were observed by TEM.

Energy Transfer Efficiency from ZnO-Nanocrystals to Eu3+ Ions Embedded in SiO₂ Film for Emission at 614 nm.

Science.gov (United States)

Mangalam, Vivek; Pita, Kantisara

2017-08-10

In this work, we study the energy transfer mechanism from ZnO nanocrystals (ZnO-nc) to Eu 3+ ions by fabricating thin-film samples of ZnO-nc and Eu 3+ ions embedded in a SiO₂ matrix using the low-cost sol-gel technique. The time-resolved photoluminescence (TRPL) measurements from the samples were analyzed to understand the contribution of energy transfer from the various ZnO-nc emission centers to Eu 3+ ions. The decay time obtained from the TRPL measurements was used to calculate the energy transfer efficiencies from the ZnO-nc emission centers, and these results were compared with the energy transfer efficiencies calculated from steady-state photoluminescence emission results. The results in this work show that high transfer efficiencies from the excitonic and Zn defect emission centers is mostly due to the energy transfer from ZnO-nc to Eu 3+ ions which results in the radiative emission from the Eu 3+ ions at 614 nm, while the energy transfer from the oxygen defect emissions is most probably due to the energy transfer from ZnO-nc to the new defects created due to the incorporation of the Eu 3+ ions.

Applying analytical ultracentrifugation to nanocrystal suspensions

Energy Technology Data Exchange (ETDEWEB)

Jamison, Jennifer A; Krueger, Karl M; Mayo, J T; Yavuz, Cafer T; Redden, Jacina J; Colvin, Vicki L, E-mail: colvin@rice.ed [Department of Chemistry, Rice University, 6100 Main Street, MS-60, Houston, TX 77005 (United States)

2009-09-02

While applied frequently in physical biochemistry to the study of protein complexes, the quantitative use of analytical ultracentrifugation (AUC) for nanocrystal analysis is relatively rare. Its application in nanoscience is potentially very powerful as it provides a measure of nanocrystal density, size and structure directly in the solution phase. Towards that end, this paper examines the best practices for applying data collection and analysis methods for AUC, geared towards the study of biomolecules, to the unique problems of nanoparticle analysis. Using uniform nanocrystals of cadmium selenide, we compared several schemes for analyzing raw sedimentation data. Comparable values of the mean sedimentation coefficients (s-value) were found using several popular analytical approaches; however, the distribution in sample s-values is best captured using the van Holde-Weischt algorithm. Measured s-values could be reproducibly collected if sample temperature and concentration were controlled; under these circumstances, the variability for average sedimentation values was typically 5%. The full shape of the distribution in s-values, however, is not easily subjected to quantitative interpretation. Moreover, the selection of the appropriate sedimentation speed is crucial for AUC of nanocrystals as the density of inorganic nanocrystals is much larger than that of solvents. Quantitative analysis of sedimentation properties will allow for better agreement between experimental and theoretical models of nanocrystal solution behavior, as well as providing deeper insight into the hydrodynamic size and solution properties of nanomaterials.

Symmetry breaking during seeded growth of nanocrystals.

Science.gov (United States)

Xia, Xiaohu; Xia, Younan

2012-11-14

Currently, most of the reported noble-metal nanocrystals are limited to a high level of symmetry, as constrained by the inherent, face-centered cubic (fcc) lattice of these metals. In this paper, we report, for the first time, a facile and versatile approach (backed up by a clear mechanistic understanding) for breaking the symmetry of an fcc lattice and thus obtaining nanocrystals with highly unsymmetrical shapes. The key strategy is to induce and direct the growth of nanocrystal seeds into unsymmetrical modes by manipulating the reduction kinetics. With silver as an example, we demonstrated that the diversity of possible shapes taken by noble-metal nanocrystals could be greatly expanded by incorporating a series of new shapes drastically deviated from the fcc lattice. This work provides a new method to investigate shape-controlled synthesis of metal nanocrystal.

Strong composition-dependence on glass-forming ability in Ni-(Ti,Zr)-Si pseudo-ternary alloys

International Nuclear Information System (INIS)

Yang, H.; Wang, J.Q.; Li, Y.

2006-01-01

The glass formation in Ni-(Ti,Zr)-Si pseudo-ternary alloys was studied. For suction casting, by carefully adjusting the alloy composition and studying the microstructure changes, the best glass-forming alloy with a 2 mm diameter is pinpointed in a narrow composition region of 57.5-58.5 at.% Ni, 36.5-38.5 at.% (Ti + Zr) and 5-5.5 at.% Si. The main competing crystalline phases, identified by XRD and SEM, were Ni 10 (Zr,Ti) 7 , Ni(Ti,Zr) and an unidentified Si-containing phase. Our results indicate a clear need for monitoring the microstructure change in the cross section of the ingots to locate the best glass-forming alloys

Combining Pre- and Post-Nucleation Trajectories for the Synthesis of High FAU-Content Faujasite Nanocrystals from Organic-Free Sols

Energy Technology Data Exchange (ETDEWEB)

Khaleel, Maryam; Xu, Wenqian; Lesch, David A.; Tsapatsis, Michael

2016-06-28

The effects of synthesis conditions on the FAU/EMT content and the size of nanocrystals, formed from inorganic aluminosilicate sols, were investigated. High resolution transmission electron microscopy imaging and comparison of experimental X-ray diffraction patterns with simulations demonstrated that all materials made starting from synthesis mixtures in the composition range (1.8-33) SiO2: 1 Al2O3: (2.7-33) Na2O: (41-1000) H2O contain FAU/EMT intergrowths. Compositions with low water content increase the FAU fraction up to 0.8 but the crystal size exceeds 100 nm. Extension of the higher FAU purity to nanocrystals was achieved only by first mixing the sol at high water content compositions that favor nanocrystal formation and then - after a certain time - lowering by freeze-drying the water to levels favoring the formation of FAU. Cryogenic transmission electron microscopy and small angle X-ray scattering from representative optically clear and colloidally stable precursor sols (aged and crystallized at ambient temperature) reveal the formation of amorphous aggregates before the detection of crystals, in agreement with earlier findings and an existing model for the aggregative growth of the zeolite MFI. The presence of these amorphous aggregates coincides with the aforementioned state of sol that preserves the original trajectory towards nano-crystals after the pronounced reduction of water content by freeze-drying. If water reduction by freeze-drying is applied earlier (before the detection of amorphous aggregates), the sol follows the low water content trajectory towards larger crystals. Despite this memory effect, the sol at this stage is still agnostic towards FAU or EMT formation, the relative content of which is dominantly determined by the final water content. These findings demonstrate that it is possible to combine the effects of pre-and post-nucleation sol composition to steer crystal size and crystal structure, respectively. They confirm precursor

Facile synthesis of uniform large-sized InP nanocrystal quantum dots using tris(tert-butyldimethylsilyl)phosphine

Science.gov (United States)

2012-01-01

Colloidal III-V semiconductor nanocrystal quantum dots [NQDs] have attracted interest because they have reduced toxicity compared with II-VI compounds. However, the study and application of III-V semiconductor nanocrystals are limited by difficulties in their synthesis. In particular, it is difficult to control nucleation because the molecular bonds in III-V semiconductors are highly covalent. A synthetic approach of InP NQDs was presented using newly synthesized organometallic phosphorus [P] precursors with different functional moieties while preserving the P-Si bond. Introducing bulky side chains in our study improved the stability while facilitating InP formation with strong confinement at a readily low temperature regime (210°C to 300°C). Further shell coating with ZnS resulted in highly luminescent core-shell materials. The design and synthesis of P precursors for high-quality InP NQDs were conducted for the first time, and we were able to control the nucleation by varying the reactivity of P precursors, therefore achieving uniform large-sized InP NQDs. This opens the way for the large-scale production of high-quality Cd-free nanocrystal quantum dots. PMID:22289352

Fabrication and electronic transport studies of single nanocrystal systems

Energy Technology Data Exchange (ETDEWEB)

Klein, David Louis [Univ. of California, Berkeley, CA (United States). Dept. of Physics

1997-05-01

Semiconductor and metallic nanocrystals exhibit interesting electronic transport behavior as a result of electrostatic and quantum mechanical confinement effects. These effects can be studied to learn about the nature of electronic states in these systems. This thesis describes several techniques for the electronic study of nanocrystals. The primary focus is the development of novel methods to attach leads to prefabricated nanocrystals. This is because, while nanocrystals can be readily synthesized from a variety of materials with excellent size control, means to make electrical contact to these nanocrystals are limited. The first approach that will be described uses scanning probe microscopy to first image and then electrically probe surfaces. It is found that electronic investigations of nanocrystals by this technique are complicated by tip-sample interactions and environmental factors such as salvation and capillary forces. Next, an atomic force microscope technique for the catalytic patterning of the surface of a self assembled monolayer is described. In principle, this nano-fabrication technique can be used to create electronic devices which are based upon complex arrangements of nanocrystals. Finally, the fabrication and electrical characterization of a nanocrystal-based single electron transistor is presented. This device is fabricated using a hybrid scheme which combines electron beam lithography and wet chemistry to bind single nanocrystals in tunneling contact between closely spaced metallic leads. In these devices, both Au and CdSe nanocrystals show Coulomb blockade effects with characteristic energies of several tens of meV. Additional structure is seen the transport behavior of CdSe nanocrystals as a result of its electronic structure.

Modulation of the electroluminescence emission from ZnO/Si NCs/p-Si light-emitting devices via pulsed excitation

Science.gov (United States)

López-Vidrier, J.; Gutsch, S.; Blázquez, O.; Hiller, D.; Laube, J.; Kaur, R.; Hernández, S.; Garrido, B.; Zacharias, M.

2017-05-01

In this work, the electroluminescence (EL) emission of zinc oxide (ZnO)/Si nanocrystals (NCs)-based light-emitting devices was studied under pulsed electrical excitation. Both Si NCs and deep-level ZnO defects were found to contribute to the observed EL. Symmetric square voltage pulses (50-μs period) were found to notably enhance EL emission by about one order of magnitude. In addition, the control of the pulse parameters (accumulation and inversion times) was found to modify the emission lineshape, long inversion times (i.e., short accumulation times) suppressing ZnO defects contribution. The EL results were discussed in terms of the recombination dynamics taking place within the ZnO/Si NCs heterostructure, suggesting the excitation mechanism of the luminescent centers via a combination of electron impact, bipolar injection, and sequential carrier injection within their respective conduction regimes.

Generalized syntheses of nanocrystal-graphene hybrids in high-boiling-point organic solvents.

Science.gov (United States)

Pang, Danny Wei-Ping; Yuan, Fang-Wei; Chang, Yan-Cheng; Li, Guo-An; Tuan, Hsing-Yu

2012-08-07

Nanocrystal-graphene have been proposed as a new kind of promising hybrid for a wide range of application areas including catalysts, electronics, sensors, biomedicine, and energy storage, etc. Although a variety of methods have been developed for the preparation of hybrids, a facile and general synthetic approach is still highly required. In this study, nanocrystal-graphene hybrids were successfully synthesized in high-boiling-point organic solvents. Graphene oxide (GO) nanosheets were modified by oleylamine (OLA) to form a OLA-GO complex in order to be readily incorporated into hydrophobic synthesis. A rich library of highly crystalline nanocrystals, with types including noble metal, metal oxide, magnetic material and semiconductor were successfully grown on chemically converted graphene (CCG), which is simultaneously reduced from GO during the synthesis. High boiling-point solvents afford sufficient thermal energy to assure the high-quality crystalline nature of NCs, therefore the post-annealing process is obviated. Controlled experiments revealed that OLA-GO triggers heterogeneous nucleation and serves as excellent nuclei anchorage media. The protocol developed here brings one step closer to achieve "unity in diversity" on the preparation of nanocrystal-graphene hybrids.

High capacity Si/DC/MWCNTs nanocomposite anode materials for lithium ion batteries

International Nuclear Information System (INIS)

Zhou Zhibin; Xu Yunhua; Liu Wengang; Niu Libin

2010-01-01

Nanocomposites comprising nanocrystal silicon (Si), disordered carbon (DC), and multi-walled carbon nanotubes (MWCNTs) - denoted as Si/DC/MWCNTs - have been prepared by pyrolyzing the phenol-formaldehyde resin (PFR) mixed with Si and MWCNTs. This nanocomposite anode material showed a discharge capacity of 1216 mAh/g in the first cycle, and a charge capacity of 711 mAh/g after 20 charge-discharge, much higher than that of Si/DC composite. It can be observed that Si particles wrapped in MWCNTs were homogeneously embedded into the matrix of the DC. The improved electrochemical performance is hypothesized to be mainly attributed to the morphology stability of the composite due to the excellent resiliency and distinct electric conductivity of the MWCNTs.

Biopolymer coated gold nanocrystals prepared using the green chemistry approach and their shape-dependent catalytic and surface-enhanced Raman scattering properties.

Science.gov (United States)

Chou, Chih-Wei; Hsieh, Hui-Hsuan; Hseu, You-Cheng; Chen, Ko-Shao; Wang, Gou-Jen; Chang, Hsien-Chang; Pan, Yong-Li; Wei, Yi-Syuan; Chang, Ko Hsin; Harn, Yeu-Wei

2013-07-21

This study deals with the preparation of multi-shaped nanoscale gold crystals under synthetically simple, green, and efficient conditions using a seed-mediated growth approach in the presence of hyaluronic acid (HA). These highly biocompatible multi-shaped gold nanocrystals were examined to evaluate their catalytic and surface enhanced Raman scattering (SERS) properties. The results show that the size and shape of the nanocrystals are mainly correlated to the amount of seed, seed size, HA concentration, and reaction temperature. Gold seeds accelerate the reduction of the gold precursor to form gold nanocrystals using HA. The HA serves as a reducing agent and a growth template for the reduction of Au(III) and nanocrystal stabilization. The multi-shaped gold nanocrystals showed superior catalytic properties and higher SERS performance. The simple, green approach efficiently controls the nanocrystals and creates many opportunities for future applications.

Resonant tunnelling features in a suspended silicon nanowire single-hole transistor

Energy Technology Data Exchange (ETDEWEB)

Llobet, Jordi; Pérez-Murano, Francesc, E-mail: francesc.perez@csic.es, E-mail: z.durrani@imperial.ac.uk [Institut de Microelectrònica de Barcelona (IMB-CNM CSIC), Campus UAB, E-08193 Bellaterra, Catalonia (Spain); Krali, Emiljana; Wang, Chen; Jones, Mervyn E.; Durrani, Zahid A. K., E-mail: francesc.perez@csic.es, E-mail: z.durrani@imperial.ac.uk [Department of Electrical and Electronic Engineering, Imperial College London, South Kensington, London SW7 2AZ (United Kingdom); Arbiol, Jordi [Institució Catalana de Recerca i Estudis Avançats (ICREA) and Institut Català de Nanociència i Nanotecnologia (ICN2), Campus UAB, 08193 Bellaterra, Catalonia (Spain); CELLS-ALBA Synchrotron Light Facility, 08290 Cerdanyola, Catalonia (Spain)

2015-11-30

Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. Transistor fabrication uses a novel and rapid process, based on focused gallium ion beam exposure and anisotropic wet etching, generating <10 nm nanocrystals inside suspended Si nanowires. Electrical characteristics at 10 K show Coulomb diamonds with charging energy ∼27 meV, associated with a single dominant nanocrystal. Resonant tunnelling features with energy spacing ∼10 meV are observed, parallel to both diamond edges. These may be associated either with excited states or hole–acoustic phonon interactions, in the nanocrystal. In the latter case, the energy spacing corresponds well with reported Raman spectroscopy results and phonon spectra calculations.

Resonant tunnelling features in a suspended silicon nanowire single-hole transistor

International Nuclear Information System (INIS)

Llobet, Jordi; Pérez-Murano, Francesc; Krali, Emiljana; Wang, Chen; Jones, Mervyn E.; Durrani, Zahid A. K.; Arbiol, Jordi

2015-01-01

Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. Transistor fabrication uses a novel and rapid process, based on focused gallium ion beam exposure and anisotropic wet etching, generating <10 nm nanocrystals inside suspended Si nanowires. Electrical characteristics at 10 K show Coulomb diamonds with charging energy ∼27 meV, associated with a single dominant nanocrystal. Resonant tunnelling features with energy spacing ∼10 meV are observed, parallel to both diamond edges. These may be associated either with excited states or hole–acoustic phonon interactions, in the nanocrystal. In the latter case, the energy spacing corresponds well with reported Raman spectroscopy results and phonon spectra calculations

Investigation into CdS nanocrystal growth regularities in silicate glass and in the thin films SiO{sub 2} at the initial stages of solid solution phase decomposi8tion; Issledovanie zakonomernostej rosta nanokristalov CdS v silikatnom stekle i v tonkikh plenkakh SiO{sub 2} na nachal`nykh stadiyakh fazovogo raspada tverdogo rastvora

Energy Technology Data Exchange (ETDEWEB)

Gurevich, S A; Ekimov, A I; Kudryavtsev, I A [AN SSSR, Leningrad (Russian Federation). Fiziko-Tekhnicheskij Inst.

1994-05-01

Regularities of CdS semiconductor hanocrystal growth in amorphous media (silicate glasses and SiO{sub 2} thin films) are investigated. Dependences of crystal mean dimension on the annealing time show that in accordance with the theory of phase decomposition the crystal growth has the successive stages of nuclei formation and diffusion growth. By means of the nuclei mean radius dependences on the annealing temperature are determined the temperatures of CdS solubility in the matrix material. Effect of the annealing atmosphere composition on the growth and optical properties of CdS nanocrystals is shown.

Chemical insight into the origin of red and blue photoluminescence arising from freestanding silicon nanocrystals.

Science.gov (United States)

Dasog, Mita; Yang, Zhenyu; Regli, Sarah; Atkins, Tonya M; Faramus, Angelique; Singh, Mani P; Muthuswamy, Elayaraja; Kauzlarich, Susan M; Tilley, Richard D; Veinot, Jonathan G C

2013-03-26

Silicon nanocrystals (Si NCs) are attractive functional materials. They are compatible with standard electronics and communications platforms and are biocompatible. Numerous methods have been developed to realize size-controlled Si NC synthesis. While these procedures produce Si NCs that appear identical, their optical responses can differ dramatically. Si NCs prepared using high-temperature methods routinely exhibit photoluminescence agreeing with the effective mass approximation (EMA), while those prepared via solution methods exhibit blue emission that is somewhat independent of particle size. Despite many proposals, a definitive explanation for this difference has been elusive for no less than a decade. This apparent dichotomy brings into question our understanding of Si NC properties and potentially limits the scope of their application. The present contribution takes a substantial step forward toward identifying the origin of the blue emission that is not expected based upon EMA predictions. It describes a detailed comparison of Si NCs obtained from three of the most widely cited procedures as well as the conversion of red-emitting Si NCs to blue emitters upon exposure to nitrogen-containing reagents. Analysis of the evidence is consistent with the hypothesis that the presence of trace nitrogen and oxygen even at the parts per million level in Si NCs gives rise to the blue emission.

Controlling the alloy composition of PtNi nanocrystals using solid-state dewetting of bilayer films

Energy Technology Data Exchange (ETDEWEB)

Seo, Okkyun; Oh, Se An; Lee, Ji Yeon; Ha, Sung Soo; Kim, Jae Myung; Choi, Jung Won; Kim, Jin-Woo [Department of Physics and Photon Science & School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005 (Korea, Republic of); Kang, Hyon Chol [Department of Materials and Science Engineering, Chosun University, Gwangju 61542 (Korea, Republic of); Noh, Do Young, E-mail: dynoh@gist.ac.kr [Department of Physics and Photon Science & School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005 (Korea, Republic of)

2016-05-15

We demonstrate that solid-state dewetting of bilayer films is an effective way for obtaining bimetallic alloy nanocrystals of controlled composition. When a Pt–Ni bilayer film were annealed near 700 °C, Pt and Ni atoms inter-diffused to form a PtNi bimetallic alloy film. Upon annealing at higher temperatures, the bilayer films transformed into <111> oriented PtNi alloy nanocrystals in small-rhombicuboctahedron shape through solid-state dewetting process. The Pt content of the nanocrystals and the alloy films, estimated by applying the Vegard's law to the relaxed lattice constant, was closely related to the thickness of each layer in the as-grown bilayer films which can be readily controlled during bilayer deposition. - Highlights: • Composition control of PtNi nanoparticles using solid state dewetting is proposed. • PtNi alloy composition was controlled by thickness ratio of Pt–Ni bilayer films. • PtNi alloy nanocrystals were obtained in small-rhombicuboctahedron shape.

Cellulose nanocrystal submonolayers by spin coating

NARCIS (Netherlands)

Kontturi, E.J.; Johansson, L.S.; Kontturi, K.S.; Ahonen, P.; Thune, P.C.; Laine, J.

2007-01-01

Dilute concentrations of cellulose nanocrystal solutions were spin coated onto different substrates to investigate the effect of the substrate on the nanocrystal submonolayers. Three substrates were probed: silica, titania, and amorphous cellulose. According to atomic force microscopy (AFM) images,

Generating ordered Si nanocrystals via atomic force microscopy

Czech Academy of Sciences Publication Activity Database

Verveniotis, Elisseos; Šípek, Emil; Stuchlík, Jiří; Kočka, Jan; Rezek, Bohuslav

2012-01-01

Roč. 358, č. 17 (2012), 2118–2121 ISSN 0022-3093 R&D Projects: GA ČR GD202/09/H041; GA MŠk(CZ) LC06040; GA AV ČR KAN400100701; GA MŠk LC510 Institutional research plan: CEZ:AV0Z10100521 Keywords : AFM * CS-AFM * a-Si:H * electric crystallization * nickel Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.597, year: 2012

The fabrication and analysis of a PbS nanocrystal:C{sub 60} bilayer hybrid photovoltaic system

Energy Technology Data Exchange (ETDEWEB)

Dissanayake, D M N M [Solid State Electronics Laboratory, University of Michigan, Ann Arbor, MI 48109-2122 (United States); Hatton, R A [Department of Chemistry, University of Warwick, Coventry CV4 7AL (United Kingdom); Lutz, T [Department of Chemistry, Imperial College, London SW7 2AY (United Kingdom); Curry, R J; Silva, S R P [Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom)], E-mail: ndissa@umich.edu

2009-06-17

A near-infrared sensitive hybrid photovoltaic system between PbS nanocrystals (PbS-NCs) and C{sub 60} is demonstrated. Up to 0.44% power conversion efficiency is obtained under AM1.5G with a short circuit current density (J{sub sc}) of 5 mA cm{sup -2} when the PbS-NC layer is treated in anhydrous methanol. The observed J{sub sc} is found be approximately one-third of the maximum expected from this hybrid configuration, indicating the potential for further optimization. Crucial for device operation, a smooth film of nanocrystals is seen to form on the hole transporting poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) layer deposited on the transparent electrode, facilitated through an ionic interaction between nanocrystal capping ligands and the PEDOT:PSS. The formation of the open circuit voltage in this system is seen to be influenced by an interfacial dipole formed at the hole-extracting electrode, providing insights for further optimization.

Stress evolution of Ge nanocrystals in dielectric matrices

Science.gov (United States)

Bahariqushchi, Rahim; Raciti, Rosario; Emre Kasapoğlu, Ahmet; Gür, Emre; Sezen, Meltem; Kalay, Eren; Mirabella, Salvatore; Aydinli, A.

2018-05-01

Germanium nanocrystals (Ge NCs) embedded in single and multilayer silicon oxide and silicon nitride matrices have been synthesized using plasma enhanced chemical vapor deposition followed by conventional furnace annealing or rapid thermal processing in N2 ambient. Compositions of the films were determined by Rutherford backscattering spectrometry and x-ray photoelectron spectroscopy. The formation of NCs under suitable process conditions was observed with high resolution transmission electron microscope micrographs and Raman spectroscopy. Stress measurements were done using Raman shifts of the Ge optical phonon line at 300.7 cm-1. The effect of the embedding matrix and annealing methods on Ge NC formation were investigated. In addition to Ge NCs in single layer samples, the stress on Ge NCs in multilayer samples was also analyzed. Multilayers of Ge NCs in a silicon nitride matrix separated by dielectric buffer layers to control the size and density of NCs were fabricated. Multilayers consisted of SiN y :Ge ultrathin films sandwiched between either SiO2 or Si3N4 by the proper choice of buffer material. We demonstrated that it is possible to tune the stress state of Ge NCs from compressive to tensile, a desirable property for optoelectronic applications. We also observed that there is a correlation between the stress and the crystallization threshold in which the compressive stress enhances the crystallization, while the tensile stress suppresses the process.

Shape and phase control of CdS nanocrystals using cationic surfactant in noninjection synthesis

Directory of Open Access Journals (Sweden)

Zou Yu

2011-01-01

Full Text Available Abstract Monodispersed CdS nanocrystals with controllable shape and phase have been successfully synthesized in this study by adding cationic surfactant in noninjection synthesis system. With the increase of the amount of cetyltrimethylammonium chloride (CTAC added, the shape of the CdS nanocrystals changed from spherical to multi-armed, and the phase changed from zinc-blende to wurtzite. It was found that halide ion Cl- plays a key role in the transformation, and other halide ions such as Br- can also induce similar transformation. We proposed that the strong binding between Cd2+ and halide ions reduced the reactivity of the precursors, decreased the nuclei formed in the nucleation stage, and led to the high concentration of precursor in the growth stage, resulting in the increase of size and phase transformation of CdS nanocrystals. In addition, it was found that the multi-armed CdS nanocrystals lost quantum confinement effect because of the increase of the size with the increase of the concentration of CTAC.

Photoluminescence behaviors of single CdSe/ZnS/TOPO nanocrystals: Adsorption effects of water molecules onto nanocrystal surfaces

International Nuclear Information System (INIS)

Oda, Masaru; Hasegawa, Atsushi; Iwami, Noriya; Nishiura, Ken; Ando, Naohisa; Nishiyama, Akira; Horiuchi, Hiromi; Tani, Toshiro

2007-01-01

We report here the distinctive modifications of photoluminescence (PL) behaviors in single CdSe/ZnS/TOPO nanocrystals depending on their environments. Long-time traces of PL intensity from single nanocrystals have been obtained in both vacuum and a wet nitrogen atmosphere. While all of the nanocrystals in both environments exhibit PL blinking behaviors, i.e. on-off intermittency of PL intensity, as usual, some of the nanocrystals in the wet nitrogen atmosphere show significant increase in duration time of on-events. As for the duration time of blinking off-events, it is for the moment associated with the occasional events of carrier capturing at trap sites on or near the nanocrystal surfaces. We propose a model in which adsorbed water molecules at the trap sites on the nanocrystal surfaces transform them under light irradiation, which eventually decreases the occurrence of the trapping events due to their inactivation. It in turn increases the PL on-times. In addition to the drastic modification of the blinking profile, we also found that in the PL time traces some kinds of undulated behaviors, i.e. continuous and rather low frequency fluctuation of PL intensity, appear during each on-event in vacuum while they disappear totally in the wet nitrogen atmosphere. These results are also described on the basis of the inactivation model of the trap sites introduced above

Evolvement of soft templates in surfactant/cosurfactant system for shape control of ZnSe nanocrystals

International Nuclear Information System (INIS)

Hou Bo; Liu Yongjun; Li Yanjuan; Yuan Bo; Jia Mingfen; Jiang Fengzhi

2012-01-01

Highlights: ► Soft templates were found in the shape control synthesis of ZnSe nanocrystals. ► Micelle formation model in the soft templates system was proposed and proved. ► Different shapes of ZnSe nanocrystals were prepared and explained by proposed model. - Abstract: The evolution of soft templates in the synthesis of ZnSe nanocrystals realized through a surfactant/cosurfactant system was investigated and a micelle formation process model was proposed. Through freeze-fracture electron microscopy, it was proven that template micelles were formed in the zinc precursors. Furthermore, it was found that a long stirring period was essential for achieving the lowest energy state of the soft templates which were used for synthesizing monodisperse ZnSe quantum dots.

Photoelectric Properties of Silicon Nanocrystals/P3HT Bulk-Heterojunction Ordered in Titanium Dioxide Nanotube Arrays

Directory of Open Access Journals (Sweden)

Švrček Vladimir

2009-01-01

Full Text Available Abstract A silicon nanocrystals (Si-ncs conjugated-polymer-based bulk-heterojunction represents a promising approach for low-cost hybrid solar cells. In this contribution, the bulk-heterojunction is based on Si-ncs prepared by electrochemical etching and poly(3-hexylthiophene (P3HT polymer. Photoelectric properties in parallel and vertical device-like configuration were investigated. Electronic interaction between the polymer and surfactant-free Si-ncs is achieved. Temperature-dependent photoluminescence and transport properties were studied and the ratio between the photo- and dark-conductivity of 1.7 was achieved at ambient conditions. Furthermore the porous titanium dioxide (TiO2 nanotubes’ template was used for vertical order of photosensitive Si-ncs/P3HT-based blend. The anodization of titanium foil in ethylene glycol-based electrolyte containing fluoride ions and subsequent thermal annealing were used to prepare anatase TiO2nanotube arrays. The arrays with nanotube inner diameter of 90 and 50 nm were used for vertical ordering of the Si-ncs/P3HT bulk-heterojunction.

Hollow nanocrystals and method of making

Science.gov (United States)

Alivisatos, A Paul [Oakland, CA; Yin, Yadong [Moreno Valley, CA; Erdonmez, Can Kerem [Berkeley, CA

2011-07-05

Described herein are hollow nanocrystals having various shapes that can be produced by a simple chemical process. The hollow nanocrystals described herein may have a shell as thin as 0.5 nm and outside diameters that can be controlled by the process of making.

Photoluminescence of a superficial Si nanolayer and an example of its use

International Nuclear Information System (INIS)

Ley, M.; Svrcek, V.; Kuznicki, Z.T.

2003-01-01

A characteristic photoluminescence of a superficial Si nanolayer realized by ion implantation has been observed. This effect, being totally independent of those shown recently for a nanoscale Si-layered system, is similar to that produced by Si nanocrystals (Si nc). To visualize the nature and give evidence of this effect, we fabricated samples in two different ways: (i) by incorporation of Si nc into thin SiO 2 films deposited on Si wafer by the spin-on-glass method and (ii) by a nanoscale superficial crystalline-Si modification using medium-energy ion implantation and thermal treatment. In both cases the UV-to-red light conversion has been observed to be independent of wafer post-implantation damage. To show the UV-to-red conversion contribution, we use the ion modified superficial Si layer with its well-defined potential barrier, the so-called carrier collection limit. Such a modified Si structure gives us a method of deconvoluting several optoelectronic features observed experimentally on modified Si. The practical realization is compatible with well-established Si technology

Binding SnO2 nanocrystals in nitrogen-doped graphene sheets as anode materials for lithium-ion batteries.

Science.gov (United States)

Zhou, Xiaosi; Wan, Li-Jun; Guo, Yu-Guo

2013-04-18

Hybrid anode materials for Li-ion batteries are fabricated by binding SnO2 nanocrystals (NCs) in nitrogen-doped reduced graphene oxide (N-RGO) sheets by means of an in situ hydrazine monohydrate vapor reduction method. The SnO2NCs in the obtained SnO2NC@N-RGO hybrid material exhibit exceptionally high specific capacity and high rate capability. Bonds formed between graphene and SnO2 nanocrystals limit the aggregation of in situ formed Sn nanoparticles, leading to a stable hybrid anode material with long cycle life. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Cellulose nanocrystal: electronically conducting polymer nanocomposites for supercapacitors

OpenAIRE

Liew, Soon Yee

2012-01-01

This thesis describes the use of cellulose nanocrystals for the fabrication of porous nanocomposites with electronic conducting polymers for electrochemical supercapacitor applications. The exceptional strength and negatively charged surface functionalities on cellulose nanocrystals are utilised in these nanocomposites. The negatively charged surface functionalities on cellulose nanocrystals allow their simultaneous incorporation into electropolymerised, positively charged conducting polymer ...

Ultrathin silicon dioxide layers with a low leakage current density formed by chemical oxidation of Si

Science.gov (United States)

Asuha,; Kobayashi, Takuya; Maida, Osamu; Inoue, Morio; Takahashi, Masao; Todokoro, Yoshihiro; Kobayashi, Hikaru

2002-10-01

Chemical oxidation of Si by use of azeotrope of nitric acid and water can form 1.4-nm-thick silicon dioxide layers with a leakage current density as low as those of thermally grown SiO2 layers. The capacitance-voltage (C-V) curves for these ultrathin chemical SiO2 layers have been measured due to the low leakage current density. The leakage current density is further decreased to approx1/5 (cf. 0.4 A/cm2 at the forward gate bias of 1 V) by post-metallization annealing at 200 degC in hydrogen. Photoelectron spectroscopy and C-V measurements show that this decrease results from (i) increase in the energy discontinuity at the Si/SiO2 interface, and (ii) elimination of Si/SiO2 interface states and SiO2 gap states.

Structural and optical properties of SiC-SiO2 nanocomposite thin films

Science.gov (United States)

Bozetine, I.; Keffous, A.; Kaci, S.; Menari, H.; Manseri, A.

2018-03-01

This study deals with the deposition of thin films of a SiC-SiO2nanocomposite deposited on silicon substrates. The deposition is carried out by a co-sputtering RF magnetron 13.56 MHz, using two targets a polycristallin 6H-SiC and sprigs of SiO2. In order to study the influence of the deposition time on the morphology, the structural and optical properties of the thin films produced, two series of samples were prepared, namely a series A with a 30 min deposition time and a series B of one hour duration. The samples were investigated using different characterization techniques such as Scanning Electron Microscope (SEM), X-ray Diffraction (DRX), Fourier Transform Infrared Spectroscopy (FTIR), Secondary Ion Mass Spectrometry (SIMS) and photoluminescence. The results obtained, reveal an optical gap varies between 1.4 and 2.4 eV depending on the thickness of the film; thus depending on the deposition time. The SIMS profile recorded the presence of oxygen (16O) on the surface, which the signal beneath the silicon signal (28Si) and carbon (12C) signals, which confirms that the oxide (SiO2) is the first material deposited at the interface film - substrate with an a-OSiC structure. The photoluminescence (PL) measurement exhibits two peaks, centred at 390 nm due to the oxide and at 416 nm due probably to the nanocrystals of SiC crystals, note that when the deposition time increases, the intensity of the PL drops drastically, result in agreement with dense and smooth film.

Near-surface layer radiation color centers in lithium fluoride nanocrystals: Luminescence and composition

Energy Technology Data Exchange (ETDEWEB)

Voitovich, A.P., E-mail: voitovich@imaph.bas-net.by; Kalinov, V.S.; Stupak, A.P.; Novikov, A.N.; Runets, L.P.

2015-01-15

Lithium fluoride nanocrystals are irradiated by gamma quanta at 77 K. The radiation color centers formed in a near-surface layer of nanocrystals are studied. Absorption, luminescence and luminescence excitation spectra of the surface defects have been measured. It has been found that the luminescence excitation spectra for aggregated surface centers consist of two or three bands with not very much different intensities. Reactions of the surface centers separately with electrons and with anion vacancies have been investigated. Numbers of anion vacancies and electrons entering into the centers composition have been established and it has been found that F{sub S1}, F{sub S1}{sup −}, F{sub S2}, F{sub S2}{sup −}, F{sub S3}{sup +} and F{sub S3} types of the surface centers are formed. The degree of luminescence polarization has been defined and it has been determined that the polarization degree for F{sub S2}{sup +} centers changes sign under transition from one excitation band to another. It has been shown that during irradiation at 77 K radiation-induced defects are formed more efficiently on the surface than in the bulk. - Highlights: • Radiative color centers were fabricated in lithium fluoride nanocrystals. • The unique absorption and luminescence characteristics are inherent in the centers. • The reactions of these centers with electrons and anion vacancies were studied. • The degree of luminescence polarization was defined. • Numbers of anion vacancies and electrons forming the centers were established.

Low-Temperature Electron Beam-Induced Transformations of Cesium Lead Halide Perovskite Nanocrystals

Science.gov (United States)

2017-01-01

Cesium lead halide perovskite (CsPbX3, with X = Br, Cl, I) nanocrystals have been found to undergo severe modifications under the high-energy electron beam irradiation of a transmission electron microscope (80/200 keV). In particular, in our previous work, together with halogen desorption, Pb2+ ions were found to be reduced to Pb0 and then diffused to form lead nanoparticles at temperatures above −40 °C. Here, we present a detailed irradiation study of CsPbBr3 nanocrystals at temperatures below −40 °C, a range in which the diffusion of Pb0 atoms/clusters is drastically suppressed. Under these conditions, the irradiation instead induces the nucleation of randomly oriented CsBr, CsPb, and PbBr2 crystalline domains. In addition to the Br desorption, which accompanies Pb2+ reduction at all the temperatures, Br is also desorbed from the CsBr and PbBr2 domains at low temperatures, leading to a more pronounced Br loss, thus the final products are mainly composed of Cs and Pb. The overall transformation involves the creation of voids, which coalesce upon further exposure, as demonstrated in both nanosheets and nanocuboids. Our results show that although low temperatures hinder the formation of Pb nanoparticles in CsPbBr3 nanocrystals when irradiated, the nanocrystals are nevertheless unstable. Consequently, we suggest that an optimum combination of temperature range, electron energy, and dose rate needs to be carefully chosen for the characterization of halide perovskite nanocrystals to minimize both the Pb nanoparticle formation and the structural decomposition. PMID:28983524

Plasmonic Properties of Silicon Nanocrystals Doped with Boron and Phosphorus.

Science.gov (United States)

Kramer, Nicolaas J; Schramke, Katelyn S; Kortshagen, Uwe R

2015-08-12

Degenerately doped silicon nanocrystals are appealing plasmonic materials due to silicon's low cost and low toxicity. While surface plasmonic resonances of boron-doped and phosphorus-doped silicon nanocrystals were recently observed, there currently is poor understanding of the effect of surface conditions on their plasmonic behavior. Here, we demonstrate that phosphorus-doped silicon nanocrystals exhibit a plasmon resonance immediately after their synthesis but may lose their plasmonic response with oxidation. In contrast, boron-doped nanocrystals initially do not exhibit plasmonic response but become plasmonically active through postsynthesis oxidation or annealing. We interpret these results in terms of substitutional doping being the dominant doping mechanism for phosphorus-doped silicon nanocrystals, with oxidation-induced defects trapping free electrons. The behavior of boron-doped silicon nanocrystals is more consistent with a strong contribution of surface doping. Importantly, boron-doped silicon nanocrystals exhibit air-stable plasmonic behavior over periods of more than a year.

Nanocrystals in the glass and centers of localization of free charge carriers in the thick-film resistors

International Nuclear Information System (INIS)

Abdurakhmanov, G.

2012-01-01

Conduction mechanism of doped silicate glass (DSG) based on existence of nanocrystals in the glass is proposed. These nanocrystals act as localization centers of free charge carriers. Random distribution of the nanocrystal's sizes and distances between them leads to charge transport by variable length hopping. It is shown that dopant atoms generate the narrow impurity subband of 0.03 eV in width. This subband joins close to the glass valence band top or slightly (less than 0.01 eV) separated from the last. What is why the hopping mechanism coexists with thermal activation one and at low temperatures (T -n ), 0.25 800 K) structure transitions of nanocrystals take place and conductivity of DSG decreases sharply. Beyond of the minimum of conductivity (above 1000 K) energy gap is formed between the impurity subband and the valence band top of glass, so DSG behaves like a typical semiconductor. (author)

Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector

Energy Technology Data Exchange (ETDEWEB)

Chatbouri, S., E-mail: Samir.chatbouri@yahoo.com; Troudi, M.; Sghaier, N.; Kalboussi, A. [Avenue de I’environnement, Université de Monastir, Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir (Tunisia); Aimez, V. [Université de Sherbrooke, Laboratoire Nanotechnologies et Nanosystémes (UMI-LN2 3463), Université de Sherbrooke—CNRS—INSA de Lyon-ECL-UJF-CPE Lyon, Institut Interdisciplinaire d’Innovation Technologique (Canada); Drouin, D. [Avenue de I’environnement, Université de Monastir, Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir (Tunisia); Souifi, A. [Institut des Nanotechnologies de Lyon—site INSA de Lyon, UMR CNRS 5270 (France)

2016-09-15

In this paper we present the trapping of photogenerated charge carriers for 300 s resulted by their direct exchange under illumination between a few silicon nanocrystals (ncs-Si) embedded in an oxide tunnel layer (SiO{sub x} = 1.5) and the tunnel oxide traps levels for a single electron photodetector (photo-SET or nanopixel). At first place, the presence of a photocurrent limited in the inversion zone under illumination in the I–V curves confirms the creation of a pair electron/hole (e–h) at high energy. This photogenerated charge carriers can be trapped in the oxide. Using the capacitance-voltage under illumination (the photo-CV measurements) we show a hysteresis chargement limited in the inversion area, indicating that the photo-generated charge carriers are stored at traps levels at the interface and within ncs-Si. The direct exchange of the photogenerated charge carriers between the interface traps levels and the ncs-Si contributed on the photomemory effect for 300 s for our nanopixel at room temperature.

Synthesis and preservation of graphene-supported uranium dioxide nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Ma, Hanyu [Department of Civil and Environmental Engineering and Earth Sciences, University of Notre Dame, 156 Fitzpatrick Hall, Notre Dame, IN 46556 (United States); Wang, Haitao [Department of Civil and Environmental Engineering and Earth Sciences, University of Notre Dame, 156 Fitzpatrick Hall, Notre Dame, IN 46556 (United States); Department of Civil, Environmental, and Construction Engineering, Texas Tech University, 911 Boston Ave., Lubbock, TX 79409 (United States); Burns, Peter C. [Department of Civil and Environmental Engineering and Earth Sciences, University of Notre Dame, 156 Fitzpatrick Hall, Notre Dame, IN 46556 (United States); Department of Chemistry and Biochemistry, University of Notre Dame, 251 Nieuwland Science Hall, Notre Dame, IN 46556 (United States); McNamara, Bruce K.; Buck, Edgar C. [Nuclear Chemistry & Engineering Group, Pacific Northwest National Laboratory, 902 Battelle Boulevard, Richland, WA 99352 (United States); Na, Chongzheng, E-mail: chongzheng.na@gmail.com [Department of Civil and Environmental Engineering and Earth Sciences, University of Notre Dame, 156 Fitzpatrick Hall, Notre Dame, IN 46556 (United States); Department of Civil, Environmental, and Construction Engineering, Texas Tech University, 911 Boston Ave., Lubbock, TX 79409 (United States)

2016-07-15

Graphene-supported uranium dioxide (UO{sub 2}) nanocrystals are potentially important fuel materials. Here, we investigate the possibility of synthesizing graphene-supported UO{sub 2} nanocrystals in polar ethylene glycol compounds by the polyol reduction of uranyl acetylacetone under boiling reflux, thereby enabling the use of an inexpensive graphene precursor graphene oxide into a one-pot process. We show that triethylene glycol is the most suitable solvent with an appropriate reduction potential for producing nanometer-sized UO{sub 2} crystals compared to monoethylene glycol, diethylene glycol, and polyethylene glycol. Graphene-supported UO{sub 2} nanocrystals synthesized with triethylene glycol show evidence of heteroepitaxy, which can be beneficial for facilitating heat transfer in nuclear fuel particles. Furthermore, we show that graphene-supported UO{sub 2} nanocrystals synthesized by polyol reduction can be readily stored in alcohols, impeding oxidation from the prevalent oxygen in air. Together, these methods provide a facile approach for preparing and storing graphene-supported UO{sub 2} nanocrystals for further investigation and development under ambient conditions. - Highlights: • UO{sub 2} nanocrystals are synthesized using polyol reduction method. • Triethylene glycol is the best reducing agent for nano-sized UO{sub 2} crystals. • UO{sub 2} nanocrystals grow on graphene through heteroepitaxy. • Graphene-supported UO{sub 2} nanocrystals can be stored in alcohols to prevent oxidation.

Size effect on the SHG properties of Cu-doped CdI2 nanocrystals

International Nuclear Information System (INIS)

Miah, M. Idrish

2009-01-01

Because the optically induced second harmonic generation (SHG) is prevented by symmetry in a centrosymmetric material, one needs to form noncentrosymmetric processes in order to observe the SHG. However, one of the efficient ways to enhance the noncentrosymmetricity of a material is to dope it with an appropriate impurity and amount. We grow Cu-doped CdI 2 layered nanocrystal structures from the mixture of CdI 2 and CuI using the standard Bridgman-Stockbarger method and investigate the nano-confined effects by studying the second-order optical effect via the measurements of SHG. The second-order susceptibility for the nanocrystals is calculated and the values at liquid helium temperature range from 0.38 to 0.83 pm V -1 for the thicknesses of 10-0.8 nm respectively. The size dependence demonstrates the nano-sized quantum-confined effect with a clear increase in the SHG with decreasing the thickness of the nanocrystal or crystal temperature. Since the local electron-phonon anharmonicity is described by third-order rank tensors in disordered systems, the SHG is very similar to that one introduced for the third-order optical susceptibility. It has been confirmed by observing the large photoluminescent yield of the pure crystals. The Raman scattering spectra taken for thin nanocrystals confirm the phonon modes originating from interlayer phonons crucially responsible for the observed effects. The obtained results show that the Cu-doped CdI 2 layered nanocrystals are promising materials for applications in optoelectronic nano-devices.

Evolvement of soft templates in surfactant/cosurfactant system for shape control of ZnSe nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Hou Bo [Key Laboratory of Medicinal Chemistry for Natural Resource, Ministry of Education, School of Chemical Science and Technology, Yunnan University, Kunming 650091 (China); Liu Yongjun [Advanced Analysis and Measurement Center, Yunnan University, Kunming 650091 (China); Li Yanjuan [Key Laboratory of Medicinal Chemistry for Natural Resource, Ministry of Education, School of Chemical Science and Technology, Yunnan University, Kunming 650091 (China); Yuan Bo [Advanced Analysis and Measurement Center, Yunnan University, Kunming 650091 (China); Jia Mingfen [Key Laboratory of Medicinal Chemistry for Natural Resource, Ministry of Education, School of Chemical Science and Technology, Yunnan University, Kunming 650091 (China); Jiang Fengzhi, E-mail: fengzhij@ynu.edu.cn [Key Laboratory of Medicinal Chemistry for Natural Resource, Ministry of Education, School of Chemical Science and Technology, Yunnan University, Kunming 650091 (China); Advanced Analysis and Measurement Center, Yunnan University, Kunming 650091 (China)

2012-03-25

Highlights: Black-Right-Pointing-Pointer Soft templates were found in the shape control synthesis of ZnSe nanocrystals. Black-Right-Pointing-Pointer Micelle formation model in the soft templates system was proposed and proved. Black-Right-Pointing-Pointer Different shapes of ZnSe nanocrystals were prepared and explained by proposed model. - Abstract: The evolution of soft templates in the synthesis of ZnSe nanocrystals realized through a surfactant/cosurfactant system was investigated and a micelle formation process model was proposed. Through freeze-fracture electron microscopy, it was proven that template micelles were formed in the zinc precursors. Furthermore, it was found that a long stirring period was essential for achieving the lowest energy state of the soft templates which were used for synthesizing monodisperse ZnSe quantum dots.

Nanogrids and Beehive-Like Nanostructures Formed by Plasma Etching the Self-Organized SiGe Islands

Science.gov (United States)

Chang, Yuan-Ming; Jian, Sheng-Rui; Juang, Jenh-Yih

2010-09-01

A lithography-free method for fabricating the nanogrids and quasi-beehive nanostructures on Si substrates is developed. It combines sequential treatments of thermal annealing with reactive ion etching (RIE) on SiGe thin films grown on (100)-Si substrates. The SiGe thin films deposited by ultrahigh vacuum chemical vapor deposition form self-assembled nanoislands via the strain-induced surface roughening (Asaro-Tiller-Grinfeld instability) during thermal annealing, which, in turn, serve as patterned sacrifice regions for subsequent RIE process carried out for fabricating nanogrids and beehive-like nanostructures on Si substrates. The scanning electron microscopy and atomic force microscopy observations confirmed that the resultant pattern of the obtained structures can be manipulated by tuning the treatment conditions, suggesting an interesting alternative route of producing self-organized nanostructures.

Flame synthesis of zinc oxide nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Merchan-Merchan, Wilson, E-mail: wmerchan-merchan@ou.edu [School of Aerospace and Mechanical Engineering, University of Oklahoma, Norman, OK 73019 (United States); Farahani, Moien Farmahini [School of Aerospace and Mechanical Engineering, University of Oklahoma, Norman, OK 73019 (United States)

2013-02-01

Highlights: Black-Right-Pointing-Pointer We report a single-step flame method for the synthesis of Zn oxide nanocrystals. Black-Right-Pointing-Pointer Diverse flame positions lead to a variation of Zn oxide nanocrystal growth. Black-Right-Pointing-Pointer The synthesized crystals have polyhedral, pipet- and needle-like shape. Black-Right-Pointing-Pointer High length-to-diameter aspect-ratio crystals appear in a higher temperature flame. Black-Right-Pointing-Pointer The crystal growth mechanism corresponds to vapor-to-solid conversion. - Abstract: Distinctive zinc oxide (ZnO) nanocrystals were synthesized on the surface of Zn probes using a counter-flow flame medium formed by methane/acetylene and oxygen-enriched air streams. The source material, a zinc wire with a purity of {approx}99.99% and diameter of 1 mm, was introduced through a sleeve into the oxygen rich region of the flame. The position of the probe/sleeve was varied within the flame medium resulting in growth variation of ZnO nanocrystals on the surface of the probe. The shape and structural parameters of the grown crystals strongly depend on the flame position. Structural variations of the synthesized crystals include single-crystalline ZnO nanorods and microprisms (ZMPs) (the ZMPs have less than a few micrometers in length and several hundred nanometers in cross section) with a large number of facets and complex axial symmetry with a nanorod protruding from their tips. The protruding rods are less than 100 nm in diameter and lengths are less than 1 {mu}m. The protruding nanorods can be elongated several times by increasing the residence time of the probe/sleeve inside the oxygen-rich flame or by varying the flame position. At different flame heights, nanorods having higher length-to-diameter aspect-ratio can be synthesized. A lattice spacing of {approx}0.26 nm was measured for the synthesized nanorods, which can be closely correlated with the (0 0 2) interplanar spacing of hexagonal ZnO (Wurtzite) cells

Structural and optical characterization of self-assembled Ge nanocrystal layers grown by plasma-enhanced chemical vapor deposition.

Science.gov (United States)

Saeed, Saba; Buters, Frank; Dohnalova, Katerina; Wosinski, Lech; Gregorkiewicz, Tom

2014-10-10

We present a structural and optical study of solid-state dispersions of Ge nanocrystals prepared by plasma-enhanced chemical vapor deposition. Structural analysis shows the presence of nanocrystalline germanium inclusions embedded in an amorphous matrix of Si-rich SiO(2).Optical characterization reveals two prominent emission bands centered around 2.6 eV and 3.4 eV, and tunable by excitation energy. In addition, the lower energy band shows an excitation power-dependent blue shift of up to 0.3 eV. Decay dynamics of the observed emission contains fast (nanosecond) and slow (microseconds) components, indicating contributions of several relaxation channels. Based on these material characteristics, a possible microscopic origin of the individual emission bands is discussed.

Synthesis and Characterization of Colloidal Metal and Photovoltaic Semiconductor Nanocrystals

KAUST Repository

Abulikemu, Mutalifu

2014-11-05

Metal and semiconducting nanocrystals have received a great deal of attention from fundamental scientists and application-oriented researchers due to their physical and chemical properties, which differ from those of bulk materials. Nanocrystals are essential building blocks in the development of nanostructured devices for energy conversion. Colloidal metals and metal chalcogenides have been developed for use as nanocrystal inks to produce efficient solar cells with lower costs. All high-performing photovoltaic nanocrystals contain toxic elements, such as Pb, or scarce elements, such as In; thus, the production of solution-processable nanocrystals from earth-abundant materials using environmentally benign synthesis and processing methods has become a major challenge for the inorganic semiconductor-based solar field. This dissertation, divided into two parts, addresses several aspects of these emerging challenges. The first portion of the thesis describes the synthesis and characterization of nanocrystals of antimony sulfide, which is composed of non-scarce and non-toxic elements, and examines their performance in photovoltaic devices. The effect of various synthetic parameters on the final morphology is explored. The structural, optical and morphological properties of the nanocrystals were investigated, and Sb2S3 nanocrystal-based solid-state semiconductor-sensitized solar cells were fabricated using different deposition processes. We achieved promising power conversion efficiencies of 1.48%. The second part of the thesis demonstrates a novel method for the in situ synthesis and patterning of nanocrystals via reactive inkjet printing. The use of low-cost manufacturing approaches for the synthesis of nanocrystals is critical for many applications, including photonics and electronics. In this work, a simple, low-cost method for the synthesis of nanocrystals with minimum size variation and waste using reactive inkjet printing is introduced. As a proof of concept, the

Formation of noble metal nanocrystals in the presence of biomolecules

Science.gov (United States)

Burt, Justin Lockheart

One of the most promising, yet least studied routes for producing biocompatible nanostructures involves synthesis in the presence of biomolecules. I hypothesized that globular proteins could provide a suitable framework to regulate the formation of noble metal nanocrystals. As proof of concept, I designed two novel synthesis protocols utilizing bovine serum albumin (BSA) protein to regulate the formation of gold nanocrystals. In the first case, the standard protocol for polyol reduction was modified by replacing ethylene glycol with glycerin, replacing synthetic polymers with BSA as protecting agent, and decreasing the reaction temperature. In the second case, the Brust-Schiffrin two-phase reduction was modified by replacing alkylthiols with BSA as protecting agent, which facilitated a strictly aqueous phase synthesis. Due to superior product yield and rapid reduction at room temperature, the aqueous protocol became the foundation for subsequent studies. I extended this approach to produce well-dispersed ˜2nm silver, gold, and platinum nanocrystals. Having demonstrated the feasibility of BSA-functionalized nanocrystals, some potential uses were explored. BSA-functionalized silver nanocrystals were employed in a broader study on the interaction of silver nanocrystals with HIV. BSA-functionalized gold nanocrystals were utilized for in vivo dosage of a contrast enhancing agent to bacteria. BSA-functionalized platinum nanocrystals were studied as hydrogenation catalysts. Since many intriguing uses for protein-functionalized nanocrystals involve incorporation into biosystems, I sought to enhance biocompatibility by using ascorbic acid as reducing agent. Initial experiments revealed elongated and branched nanocrystals. Such structures were not observed in previous synthesis protocols with BSA, so I hypothesized ascorbic acid was driving their formation. To test my assertion, I reduced ionic gold in an aqueous solution of ascorbic acid, thereby discovering a new method

Simultaneous control of nanocrystal size and nanocrystal ...

Indian Academy of Sciences (India)

applications such as a photo-sensor [11]. Thus, it is desirable to have, not only a control on the size of the nanocrystals, but also an independent tunability of the ... 1-thioglycerol) in 25 ml methanol under inert atmosphere. 10 ml of 0.2 M sodium sulfide solution is then added to the reaction mixture dropwise and the reaction.

Cellulose nanocrystals with tunable surface charge for nanomedicine

Science.gov (United States)

Hosseinidoust, Zeinab; Alam, Md Nur; Sim, Goeun; Tufenkji, Nathalie; van de Ven, Theo G. M.

2015-10-01

Crystalline nanoparticles of cellulose exhibit attractive properties as nanoscale carriers for bioactive molecules in nanobiotechnology and nanomedicine. For applications in imaging and drug delivery, surface charge is one of the most important factors affecting the performance of nanocarriers. However, current methods of preparation offer little flexibility for controlling the surface charge of cellulose nanocrystals, leading to compromised colloidal stability under physiological conditions. We report a synthesis method that results in nanocrystals with remarkably high carboxyl content (6.6 mmol g-1) and offers continuous control over surface charge without any adjustment to the reaction conditions. Six fractions of nanocrystals with various surface carboxyl contents were synthesized from a single sample of softwood pulp with carboxyl contents varying from 6.6 to 1.7 mmol g-1 and were fully characterized. The proposed method resulted in highly stable colloidal nanocrystals that did not aggregate when exposed to high salt concentrations or serum-containing media. Interactions of these fractions with four different tissue cell lines were investigated over a wide range of concentrations (50-300 μg mL-1). Darkfield hyperspectral imaging and confocal microscopy confirmed the uptake of nanocrystals by selected cell lines without any evidence of membrane damage or change in cell density; however a charge-dependent decrease in mitochondrial activity was observed for charge contents higher than 3.9 mmol g-1. A high surface carboxyl content allowed for facile conjugation of fluorophores to the nanocrystals without compromising colloidal stability. The cellular uptake of fluoresceinamine-conjugated nanocrystals exhibited a time-dose dependent relationship and increased significantly with doubling of the surface charge.Crystalline nanoparticles of cellulose exhibit attractive properties as nanoscale carriers for bioactive molecules in nanobiotechnology and nanomedicine. For

Microscopic theory of cation exchange in CdSe nanocrystals.

Science.gov (United States)

Ott, Florian D; Spiegel, Leo L; Norris, David J; Erwin, Steven C

2014-10-10

Although poorly understood, cation-exchange reactions are increasingly used to dope or transform colloidal semiconductor nanocrystals (quantum dots). We use density-functional theory and kinetic Monte Carlo simulations to develop a microscopic theory that explains structural, optical, and electronic changes observed experimentally in Ag-cation-exchanged CdSe nanocrystals. We find that Coulomb interactions, both between ionized impurities and with the polarized nanocrystal surface, play a key role in cation exchange. Our theory also resolves several experimental puzzles related to photoluminescence and electrical behavior in CdSe nanocrystals doped with Ag.

Aqueous synthesis and characterization of bovine hemoglobin-conjugated cadmium sulfide nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Yang, Guangrui [Institute of Environmental and Municipal Engineering, North China University of Water Conservancy and Electric Power, Zhengzhou 450011 (China); Qin, Dezhi, E-mail: dezhiqin@163.com [College of Chemistry and Chemical Engineering, Pingdingshan University, Pingdingshan 467000 (China); Du, Xian; Zhang, Li; Zhao, Ganqing; Zhang, Qiuxia; Wu, Jiulin [College of Chemistry and Chemical Engineering, Pingdingshan University, Pingdingshan 467000 (China)

2014-08-01

Highlights: • CdS nanocrystals were synthesized by biomimetic method in bovine hemoglobin (BHb) solution. • The study of the interaction between Cd{sup 2+}/CdS and BHb. • The optical properties of BHb-conjugated CdS nanocrystals. • The synthesis process of BHb-conjugated CdS nanocrystals is facile, effective and environment friendly. • The change of secondary structure of BHb after binding to CdS nanocrystals. - Abstract: Cadmium sulfide (CdS) nanocrystals with average diameter about 5.5 nm were synthesized in aqueous solution of bovine hemoglobin (BHb) via simple biomimetic method. Powder X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), transmission electron microscopy (TEM) and selected area electron diffraction (SAED) characterizations were used to determine the structure and morphology of CdS nanocrystals. It was revealed that amount of BHb, chelating of Cd{sup 2+} to BHb and reaction temperature were key factors in controlling shape and dispersion of CdS nanocrystals. The binding sites of BHb to CdS nanocrystals and the change of secondary structure of protein have been identified by Fourier transform infrared (FT-IR) and circular dichroism (CD) spectroscopy. It was found that conjugating of BHb with Cd{sup 2+} and CdS could protect nanocrystals from agglomerating. Moreover, the thermostability of BHb enhanced after conjugating with CdS nanocrystals. The interaction mechanism of BHb with Cd{sup 2+}/CdS was also proposed. The quantum-confined effect of CdS nanocrystals was confirmed by ultraviolet–visible (UV–vis) spectrum. The nanocrystals exhibited a well-defined photoluminescence (PL) emission feature at about 510 nm with narrow full width at half maximum (FWHM)

Silicon nanocrystal films for electronic applications

Energy Technology Data Exchange (ETDEWEB)

Lechner, Robert W.

2009-02-06

Whether nanoparticles of silicon are really suited for such applications, whether layers fabricated from this exhibit semiconducting properties, whether they can be doped, and whether for instance via the doping the conductivity can be tuned, was studied in the present thesis. Starting material for this were on the one hand spherical silicon nanocrystals with a sharp size distribution and mean diameters in the range from 4-50 nm. Furthermore silicon particle were available, which are with 50-500 nm distinctly larger and exhibit a broad distribution of the mean size and a polycrystalline fine structure with strongly bifurcated external morphology. The small conductivities and tje low mobility values of the charge carriers in the layers of silicon nanocrystals suggest to apply suited thermal after-treatment procedures. So was found that the aluminium-induced layer exchange (ALILE) also can be transferred to the porous layers of nanocrystals. With the deuteron passivation a method was available to change the charge-carrier concentration in the polycrystalline layers. Additionally to ALILE laser crystallization as alternative after-treatment procedure of the nanocrystal layers was studied.

MOS memory structures by very-low-energy-implanted Si in thin SiO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Dimitrakis, P.; Kapetanakis, E.; Normand, P.; Skarlatos, D.; Tsoukalas, D.; Beltsios, K.; Claverie, A.; Benassayag, G.; Bonafos, C.; Chassaing, D.; Carrada, M.; Soncini, V

2003-08-15

The electrical characteristics of thin silicon dioxide layers with embedded Si nanocrystals obtained by low-energy ion beam implantation and subsequent annealing have been investigated through capacitance and current-voltage measurements of MOS capacitors. The effects of the implantation energy (range: 0.65-2 keV), annealing temperature (950-1050 deg. C) and injection oxide characteristics on charge injection and storage are reported. It is shown that the implantation energy allows for a fine control of the memory window characteristics, and various device options are possible including memory operation with charge injection at low gate voltages.

Raman Spectroscopy of SiO{sub 2}–Na{sub 2}O–Al{sub 2}O{sub 3}–B{sub 2}O{sub 3} glass doped with Nd{sup 3+} and CdS nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Serqueira, E.O.; Dantas, N.O. [Laboratório de Novos Materiais Isolantes e Semicondutores (LNMIS), Instituto de Física, Universidade Federal de Uberlândia, Uberlândia, MG 38400-902 (Brazil); Anjos, V. [Grupo de Espectroscopia de Materiais, Departamento de Física, ICE – UFJF, Campus Universitário, Juiz de Fora, MG 36036-330 (Brazil); Bell, M.J.V., E-mail: mjvbell@yahoo.com.br [Grupo de Espectroscopia de Materiais, Departamento de Física, ICE – UFJF, Campus Universitário, Juiz de Fora, MG 36036-330 (Brazil)

2014-01-05

Highlights: • The formation of CdS nanocrystals in the glassy host is shown by Raman measurements. • Nd{sub 2}O{sub 3} modifies the growth of CdS nanocrystals in the SNAB glass. • Nd{sup 3+} ions are not incorporated inside the semiconductor nanocrystals. -- Abstract: We report the Raman spectroscopic characterization of a SNAB glass system doped with neodymium and CdS nanocrystals and fabricated by the fusion process. Raman spectra revealed CdS nanocrystals in the glass host and bands associated with Si–O vibrational modes with five structural configurations, boroxol modes of B{sub 2}O{sub 3}, Al–O and Cd–S vibrational modes. Additionally, Nd{sub 2}O{sub 3} modifies the growth of CdS nanocrystals in the SNAB glass and Nd{sup 3+} ions are not incorporated inside the semiconductor nanocrystals.

Influences of Er3+ content on structure and upconversion emission of oxyfluoride glass ceramics containing CaF2 nanocrystals

International Nuclear Information System (INIS)

Chen Daqin; Wang Yuansheng; Yu Yunlong; Ma En; Bao Feng; Hu Zhongjian; Cheng Yao

2006-01-01

Transparent 45SiO 2 -25Al 2 O 3 -5CaO-10NaF-15CaF 2 glass ceramics doped with different content of erbium ion (Er 3+ ) were prepared. X-ray diffraction (XRD) and transmission electron microscope (TEM) analyses evidenced the spherical CaF 2 nanocrystals homogeneously embedded among the glassy matrix. With increasing of Er 3+ content, the size of CaF 2 nanocrystals decreased while the number density increased. The crystallization kinetics studies revealed that CaF 2 crystallization was a diffusion-controlled growth process from small dimensions with decreasing nucleation rate. Er 3+ could act as nucleating agent to lower down crystallization temperature, while some of them may stay at the crystal surfaces to retard the growth of crystal. Intense red and weak green upconversion emissions were recorded for glass ceramics and their intensities increased with the increasing of Er 3+ content under 980 nm excitation. However, the concentration quenching effect appeared when Er 3+ doping reached 2 mol%. These results could be attributed to the change of ligand field of Er 3+ ions due to the incorporation of Er 3+ ions into precipitated fluoride nanocrystals

Electronic states and phonon properties of Ge{sub x}Si{sub 1−x} nanostructures

Energy Technology Data Exchange (ETDEWEB)

Zhao, P.Q. [Department of Applied Physics, Nanjing Tech University, Nanjing 211816 (China); National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Liu, L.Z. [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Yang, Y.M. [Department of Physics, Southern University, Nanjing 210096 (China); Wu, X.L., E-mail: hkxlwu@nju.edu.cn [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Department of Physics, NingBo University, NingBo 3153001 (China)

2015-07-15

Ge{sub x}Si{sub 1−x} nanostructures that can be manipulated through size reduction, geometry variation, and alloying, are considered as one of the key developments for next generation technologies, due to their easy processing, unique properties, and compatibility with the existent silicon-based microelectronic industry. In this review, we have thoroughly discussed the major advances in electronic structures and phonon properties of Ge{sub x}Si{sub 1−x} nanocrystals (NCs). Experimental and theoretical characterization related to several main factors, for example, size, composition, strain, temperature, and interface and surface were presented with special emphasis in low-frequency Raman scattering. Current difficulties in explaining the Raman spectra are the assignment of the low-frequency modes because of the complexity of the environment around the NCs, thus different theoretical models are introduced in detail to deal with different properties of Ge{sub x}Si{sub 1−x} alloy NCs including Lamb’s theory, complex-frequency (CF) model, core–shell matrix (CMS) model and spatial coherence effect model. - Highlights: • Major advances in electronic structures and phonon properties of Ge{sub x}Si{sub 1−x} nanocrystals are discussed thoroughly. • Experimental and theoretical characterization related to size, composition, strain, temperature, and interface/surface are elucidated. • Low-frequency Raman spectra are specially described based on spatial coherence effect model.