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Sample records for si nanocrystals forming

  1. Semiconductor nanocrystals formed in SiO2 by ion implantation

    International Nuclear Information System (INIS)

    Zhu, J.G.; White, C.W.; Budai, J.D.; Withrow, S.P.; Chen, Y.

    1994-11-01

    Nanocrystals of group IV (Si, Ge and SiGe), III-V (GaAs), and II-VI (CdSe) semiconductor materials have been fabricated inside SiO 2 by ion implantation and subsequent thermal annealing. The microstructure of these nanocrystalline semiconductor materials has been studied by transmission electron microscopy (TEM). The nanocrystals form in near-spherical shape with random crystal orientations in amorphous SiO 2 . Extensive studies on the nanocrystal size distributions have been carried out for the Ge nanocrystals by changing the implantation doses and the annealing temperatures. Remarkable roughening of the nanocrystals occurs when the annealing temperature is raised over the melting temperature of the implanted semiconductor material. Strong red photoluminescence peaked around 1.67 eV has been achieved in samples with Si nanocrystals in SiO 2

  2. Bond length contraction in Au nanocrystals formed by ion implantation into thin SiO2

    International Nuclear Information System (INIS)

    Kluth, P.; Johannessen, B.; Giraud, V.; Cheung, A.; Glover, C.J.; Azevedo, G. de M; Foran, G.J.; Ridgway, M.C.

    2004-01-01

    Au nanocrystals (NCs) fabricated by ion implantation into thin SiO 2 and annealing were investigated by means of extended x-ray absorption fine structure (EXAFS) spectroscopy and transmission electron microscopy. A bond length contraction was observed and can be explained by surface tension effects in a simple liquid-drop model. Such results are consistent with previous reports on nonembedded NCs implying a negligible influence of the SiO 2 matrix. Cumulant analysis of the EXAFS data suggests surface reconstruction or relaxation involving a further shortened bond length. A deviation from the octahedral closed shell structure is apparent for NCs of size 25 A

  3. Co-Au core-shell nanocrystals formed by sequential ion implantation into SiO2

    International Nuclear Information System (INIS)

    Kluth, P.; Hoy, B.; Johannessen, B.; Dunn, S. G.; Foran, G. J.; Ridgway, M. C.

    2006-01-01

    Co-Au core-shell nanocrystals (NCs) were formed by sequential ion implantation of Au and Co into thin SiO 2 . The NCs were investigated by means of transmission electron microscopy and extended x-ray absorption fine structure spectroscopy. The latter reveals a bond length expansion in the Co core compared to monatomic Co NCs. Concomitantly, a significant contraction of the bond length and a significant reduction of the effective Au-Au coordination number were observed in the Au shells. Increased Debye-Waller factors indicate significant strain in the NCs. These experimental results verify recent theoretical predictions

  4. Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N2 and O2 ambient

    International Nuclear Information System (INIS)

    Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chiang, Cheng-Neng; Lin, Chao-Cheng; Chen, Min-Chen; Chang, Chun-Yen; Sze, Simon M.; Tseng, Tseung-Yuen

    2010-01-01

    In this work, electrical characteristics of the Ge-incorporated Nickel silicide (NiSiGe) nanocrystals memory device formed by the rapidly thermal annealing in N 2 and O 2 ambient have been studied. The trapping layer was deposited by co-sputtering the NiSi 2 and Ge, simultaneously. Transmission electron microscope results indicate that the NiSiGe nanocrystals were formed obviously in both the samples. The memory devices show obvious charge-storage ability under capacitance-voltage measurement. However, it is found that the NiSiGe nanocrystals device formed by annealing in N 2 ambient has smaller memory window and better retention characteristics than in O 2 ambient. Then, related material analyses were used to confirm that the oxidized Ge elements affect the charge-storage sites and the electrical performance of the NCs memory.

  5. Comparative study of the luminescence of structures with Ge nanocrystals formed by dry and wet oxidation of SiGe films

    International Nuclear Information System (INIS)

    RodrIguez, A; Ortiz, M I; Sangrador, J; RodrIguez, T; Avella, M; Prieto, A C; Torres, A; Jimenez, J; Kling, A; Ballesteros, C

    2007-01-01

    The luminescence emission of structures containing Ge nanocrystals embedded in a dielectric matrix obtained by dry and wet oxidation of polycrystalline SiGe layers has been studied as a function of the oxidation time and initial SiGe layer thickness. A clear relationship between the intensity of the luminescence, the structure of the sample, the formation of Ge nanocrystals and the oxidation process parameters that allows us to select the appropriate process conditions to get the most efficient emission has been established. The evolution of the composition and thickness of the growing oxides and the remaining SiGe layer during the oxidation processes has been characterized using Raman spectroscopy, x-ray diffraction, Fourier-transform infrared spectroscopy, Rutherford backscattering spectrometry and transmission electron microscopy. For dry oxidation, the luminescence appears suddenly, regardless of the initial SiGe layer thickness, when all the Si of the SiGe has been oxidized and the remaining layer of the segregated Ge starts to be oxidized forming Ge nanocrystals. Luminescence is observed as long as Ge nanocrystals are present. For wet oxidation, the luminescence appears from the first stages of the oxidation, and is related to the formation of Ge-rich nanoclusters trapped in the mixed (Si and Ge) growing oxide. A sharp increase of the luminescence intensity for long oxidation times is also observed, due to the formation of Ge nanocrystals by the oxidation of the layer of segregated Ge. For both processes the luminescence is quenched when the oxidation time is long enough to cause the full oxidation of the Ge nanocrystals. The intensity of the luminescence in the dry oxidized samples is about ten times higher than in the wet oxidized ones for equal initial thickness of the SiGe layer

  6. Doping effect in Si nanocrystals

    Science.gov (United States)

    Li, Dongke; Xu, Jun; Zhang, Pei; Jiang, Yicheng; Chen, Kunji

    2018-06-01

    Intentional doping in semiconductors is a fundamental issue since it can control the conduction type and ability as well as modify the optical and electronic properties. To realize effective doping is the basis for developing semiconductor devices. However, by reducing the size of a semiconductor, like Si, to the nanometer scale, the doping effects become complicated due to the coupling between the quantum confinement effect and the surfaces and/or interfaces effect. In particular, by introducing phosphorus or boron impurities as dopants into material containing Si nanocrystals with a dot size of less than 10 nm, it exhibits different behaviors and influences on the physical properties from its bulk counterpart. Understanding the doping effects in Si nanocrystals is currently a challenge in order to further improve the performance of the next generation of nano-electronic and photonic devices. In this review, we present an overview of the latest theoretical studies and experimental results on dopant distributions and their effects on the electronic and optical properties of Si nanocrystals. In particular, the advanced characterization techniques on dopant distribution, the carrier transport process as well as the linear and nonlinear optical properties of doped Si nanocrystals, are systematically summarized.

  7. Grafted SiC nanocrystals

    DEFF Research Database (Denmark)

    Saini, Isha; Sharma, Annu; Dhiman, Rajnish

    2017-01-01

    ), raman spectroscopy and X-ray diffraction (XRD) measurements. UV–Visible absorption spectroscopy was used to study optical properties such as optical energy gap (Eg), Urbach's energy (Eu), refractive index (n), real (ε1) and imaginary (ε2) parts of dielectric constant of PVA as well as PVA......Polyvinyl alcohol (PVA) grafted SiC (PVA-g-SiC)/PVA nanocomposite was synthesized by incorporating PVA grafted silicon carbide (SiC) nanocrystals inside PVA matrix. In-depth structural characterization of resulting nanocomposite was carried out using fourier transform infrared spectroscopy (FTIR...

  8. Fabrication of highly oriented D03-Fe3Si nanocrystals by solid-state dewetting of Si ultrathin layer

    International Nuclear Information System (INIS)

    Naito, Muneyuki; Nakagawa, Tatsuhiko; Machida, Nobuya; Shigematsu, Toshihiko; Nakao, Motoi; Sudoh, Koichi

    2013-01-01

    In this paper, highly oriented nanocrystals of Fe 3 Si with a D0 3 structure are fabricated on SiO 2 using ultrathin Si on insulator substrate. First, (001) oriented Si nanocrystals are formed on the SiO 2 layer by solid state dewetting of the top Si layer. Then, Fe addition to the Si nanocrystals is performed by reactive deposition epitaxy and post-deposition annealing at 500 °C. The structures of the Fe–Si nanocrystals are analyzed by cross-sectional transmission electron microscopy and nanobeam electron diffraction. We observe that Fe 3 Si nanocrystals with D0 3 , B2, and A2 structures coexist on the 1-h post-annealed samples. Prolonged annealing at 500 °C is effective in obtaining Fe 3 Si nanocrystals with a D0 3 single phase, thereby promoting structural ordering in the nanocrystals. We discuss the formation process of the highly oriented D0 3 -Fe 3 Si nanocrystals on the basis of the atomistic structural information. - Highlights: • Highly oriented Fe–Si nanocrystals (NCs) are fabricated by reactive deposition. • Si NCs formed by solid state dewetting of Si thin layers are used as seed crystals. • The structures of Fe–Si NCs are analyzed by nanobeam electron diffraction. • Most of Fe–Si NCs possess the D0 3 structure after post-deposition annealing

  9. Ge nanocrystals formed by furnace annealing of Ge(x)[SiO2](1-x) films: structure and optical properties

    Science.gov (United States)

    Volodin, V. A.; Cherkov, A. G.; Antonenko, A. Kh; Stoffel, M.; Rinnert, H.; Vergnat, M.

    2017-07-01

    Ge(x)[SiO2](1-x) (0.1  ⩽  x  ⩽  0.4) films were deposited onto Si(0 0 1) or fused quartz substrates using co-evaporation of both Ge and SiO2 in high vacuum. Germanium nanocrystals were synthesized in the SiO2 matrix by furnace annealing of Ge x [SiO2](1-x) films with x  ⩾  0.2. According to electron microscopy and Raman spectroscopy data, the average size of the nanocrystals depends weakly on the annealing temperature (700, 800, or 900 °C) and on the Ge concentration in the films. Neither amorphous Ge clusters nor Ge nanocrystals were observed in as-deposited and annealed Ge0.1[SiO2]0.9 films. Infrared absorption spectroscopy measurements show that the studied films do not contain a noticeable amount of GeO x clusters. After annealing at 900 °C intermixing of germanium and silicon atoms was still negligible thus preventing the formation of GeSi nanocrystals. For annealed samples, we report the observation of infrared photoluminescence at low temperatures, which can be explained by exciton recombination in Ge nanocrystals. Moreover, we report strong photoluminescence in the visible range at room temperature, which is certainly due to Ge-related defect-induced radiative transitions.

  10. On formation of silicon nanocrystals under annealing SiO2 layers implanted with Si ions

    International Nuclear Information System (INIS)

    Kachurin, G.A.; Yanovskaya, S.G.; Volodin, V.A.; Kesler, V.G.; Lejer, A.F.; Ruault, M.-O.

    2002-01-01

    Raman scattering, X-ray photoelectron spectroscopy, and photoluminescence have been used to study the formation of silicon nanocrystals in SiO 2 implanted with Si ions. Si clusters have been formed at once in the postimplanted layers, providing the excessive Si concentration more ∼ 3 at. %. Si segregation with Si-Si 4 bonds formation is enhanced as following annealing temperature increase, however, the Raman scattering by Si clusters diminishes. The effect is explained by a transformation of the chain-like Si clusters into compact phase nondimensional structures. Segregation of Si nanoprecipitates had ended about 1000 deg C, but the strong photoluminescence typical for Si nanocrystals manifested itself only after 1100 deg C [ru

  11. Fabrication of highly oriented D0{sub 3}-Fe{sub 3}Si nanocrystals by solid-state dewetting of Si ultrathin layer

    Energy Technology Data Exchange (ETDEWEB)

    Naito, Muneyuki, E-mail: naito22@center.konan-u.ac.jp [Department of Chemistry, Konan University, Okamoto, Higashinada, Kobe, Hyogo 658-8501 (Japan); Nakagawa, Tatsuhiko; Machida, Nobuya; Shigematsu, Toshihiko [Department of Chemistry, Konan University, Okamoto, Higashinada, Kobe, Hyogo 658-8501 (Japan); Nakao, Motoi [Graduate School of Engineering, Kyushu Institute of Technology, Sensui, Tobata, Kitakyushu, Fukuoka 804-8550 (Japan); Sudoh, Koichi [The Institute of Scientific and Industrial Research, Osaka University, Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)

    2013-07-31

    In this paper, highly oriented nanocrystals of Fe{sub 3}Si with a D0{sub 3} structure are fabricated on SiO{sub 2} using ultrathin Si on insulator substrate. First, (001) oriented Si nanocrystals are formed on the SiO{sub 2} layer by solid state dewetting of the top Si layer. Then, Fe addition to the Si nanocrystals is performed by reactive deposition epitaxy and post-deposition annealing at 500 °C. The structures of the Fe–Si nanocrystals are analyzed by cross-sectional transmission electron microscopy and nanobeam electron diffraction. We observe that Fe{sub 3}Si nanocrystals with D0{sub 3}, B2, and A2 structures coexist on the 1-h post-annealed samples. Prolonged annealing at 500 °C is effective in obtaining Fe{sub 3}Si nanocrystals with a D0{sub 3} single phase, thereby promoting structural ordering in the nanocrystals. We discuss the formation process of the highly oriented D0{sub 3}-Fe{sub 3}Si nanocrystals on the basis of the atomistic structural information. - Highlights: • Highly oriented Fe–Si nanocrystals (NCs) are fabricated by reactive deposition. • Si NCs formed by solid state dewetting of Si thin layers are used as seed crystals. • The structures of Fe–Si NCs are analyzed by nanobeam electron diffraction. • Most of Fe–Si NCs possess the D0{sub 3} structure after post-deposition annealing.

  12. Pulsed ion-beam induced nucleation and growth of Ge nanocrystals on SiO2

    International Nuclear Information System (INIS)

    Stepina, N. P.; Dvurechenskii, A. V.; Armbrister, V. A.; Kesler, V. G.; Novikov, P. L.; Gutakovskii, A. K.; Kirienko, V. V.; Smagina, Zh. V.; Groetzschel, R.

    2007-01-01

    Pulsed low-energy (200 eV) ion-beam induced nucleation during Ge deposition on thin SiO 2 film was used to form dense homogeneous arrays of Ge nanocrystals. The ion-beam action is shown to stimulate the nucleation of Ge nanocrystals when being applied after thin Ge layer deposition. Temperature and flux variation was used to optimize the nanocrystal size and array density required for memory device. Kinetic Monte Carlo simulation shows that ion impacts open an additional channel of atom displacement from a nanocrystal onto SiO 2 surface. This results both in a decrease in the average nanocrystal size and in an increase in nanocrystal density

  13. Formation Mechanism of Ge Nanocrystals Embedded in SiO2 Studied by Fluorescence X-Ray Absorption Fine Structure

    International Nuclear Information System (INIS)

    Yan Wensheng; Li Zhongrui; Sun Zhihu; Wei Shiqiang; Kolobov, A. V.

    2007-01-01

    The formation mechanism of Ge nanocrystals for Ge (60 mol%) embedded in a SiO2 matrix grown on Si(001) and quartz-glass substrates was studied by fluorescence x-ray absorption fine structure (XAFS). It was found that the formation of Ge nanocrystals strongly depends on the properties of the substrate materials. In the as-prepared samples, Ge atoms exist in amorphous Ge and GeO2 phases. At the annealing temperature of 1073 K, on the quartz-glass substrate, Ge nanocrystals are only formed predominantly from the amorphous Ge phase in the as-prepared sample. However, on the Si(100) substrate the Ge nanocrystals are generated partly from amorphous Ge, and partly from GeO2 phases through the permutation reaction with Si substrate. Quantitative analysis revealed that about 10% of GeO2 in as-prepared sample permutated with Si in the wafer and formed Ge nanocrystals

  14. Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment

    International Nuclear Information System (INIS)

    Xian-Gao, Zhang; Kun-Ji, Chen; Zhong-Hui, Fang; Xin-Ye, Qian; Guang-Yuan, Liu; Xiao-Fan, Jiang; Zhong-Yuan, Ma; Jun, Xu; Xin-Fan, Huang; Jian-Xin, Ji; Fei, He; Kuang-Bao, Song; Jun, Zhang; Hui, Wan; Rong-Hua, Wang

    2010-01-01

    A nonvolatile memory device with nitrided Si nanocrystals embedded in a Boating gate was fabricated. The uniform Si nanocrystals with high density (3 × 10 11 cm −2 ) were deposited on ultra-thin tunnel oxide layer (∼ 3 nm) and followed by a nitridation treatment in ammonia to form a thin silicon nitride layer on the surface of nanocrystals. A memory window of 2.4 V was obtained and it would be larger than 1.3 V after ten years from the extrapolated retention data. The results can be explained by the nitrogen passivation of the surface traps of Si nanocrystals, which slows the charge loss rate. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  15. Photoluminescence from Si nanocrystals in silica: The effect of hydrogen

    International Nuclear Information System (INIS)

    Cheylan, S.; Elliman, R.G.

    2001-01-01

    The effect of H passivation on the PL emission of Si nanocrystals produced in silica by ion-implantion and annealing is shown to depend on the implant fluence. At low fluences, where the nanocrystals are small, passivation causes an enhancement of the emission intensity that is uniform over the full spectral range and therefore appears to be independent of nanocrystal size. For higher fluences, where the average size and size distribution of the nanocrystals are larger, the enhancement occurs preferentially at longer wavelengths, giving rise to a red-shift in the emission spectra. Both the enhancement and the red-shift increase monotonically with increasing fluence. These data are shown to be consistent with a model in which the probability to contain a non-radiative defect increases with nanocrystal size

  16. Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation

    Directory of Open Access Journals (Sweden)

    Jhovani Bornacelli

    2013-01-01

    Full Text Available We studied the photoluminescence (PL of Si nanocrystals (Si-NCs embedded in SiO2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm inside the SiO2 achieving a robust and better protected system. After metal ion implantation (Ag or Au, and a subsequent thermal annealing at 600°C under hydrogen-containing atmosphere, the PL signal exhibits a noticeable increase. The ion metal implantation was done at energies such that its distribution inside the silica does not overlap with the previously implanted Si ion . Under proper annealing Ag or Au nanoparticles (NPs could be nucleated, and the PL signal from Si-NCs could increase due to plasmonic interactions. However, the ion-metal-implantation-induced damage can enhance the amount of hydrogen, or nitrogen, that diffuses into the SiO2 matrix. As a result, the surface defects on Si-NCs can be better passivated, and consequently, the PL of the system is intensified. We have selected different atmospheres (air, H2/N2 and Ar to study the relevance of these annealing gases on the final PL from Si-NCs after metal ion implantation. Studies of PL and time-resolved PL indicate that passivation process of surface defects on Si-NCs is more effective when it is assisted by ion metal implantation.

  17. Memory properties and charge effect study in Si nanocrystals by scanning capacitance microscopy and spectroscopy

    Directory of Open Access Journals (Sweden)

    Bassani Franck

    2011-01-01

    Full Text Available Abstract In this letter, isolated Si nanocrystal has been formed by dewetting process with a thin silicon dioxide layer on top. Scanning capacitance microscopy and spectroscopy were used to study the memory properties and charge effect in the Si nanocrystal in ambient temperature. The retention time of trapped charges injected by different direct current (DC bias were evaluated and compared. By ramp process, strong hysteresis window was observed. The DC spectra curve shift direction and distance was observed differently for quantitative measurements. Holes or electrons can be separately injected into these Si-ncs and the capacitance changes caused by these trapped charges can be easily detected by scanning capacitance microscopy/spectroscopy at the nanometer scale. This study is very useful for nanocrystal charge trap memory application.

  18. Implantation of P ions in SiO{sub 2} layers with embedded Si nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Kachurin, G.A. E-mail: kachurin@isp.nsc.ru; Cherkova, S.G.; Volodin, V.A.; Kesler, V.G.; Gutakovsky, A.K.; Cherkov, A.G.; Bublikov, A.V.; Tetelbaum, D.I

    2004-08-01

    The effect of 10{sup 13}-10{sup 16} cm{sup -2} P ions implantation and of subsequent annealing on Si nanocrystals (Si-ncs), formed preliminarily in SiO{sub 2} layers by the ion-beam synthesis, has been studied. Photoluminescence (PL), Raman spectroscopy, high resolution electron microscopy (HREM), X-Ray Photoelectron Spectroscopy (XPS) and optical absorption were used for characterizations. The low fluence implantations have shown even individual displacements in Si-ncs quench their PL. Restoration of PL from partly damaged Si-ncs proceeds at annealing less than 1000 deg. C. In the low fluence implanted and annealed samples an increased Si-ncs PL has been found and ascribed to the radiation-induced shock crystallization of stressed Si nanoprecipitates. Annealing at temperatures under 1000 deg. C are inefficient when P ion fluences exceed 10{sup 14} cm{sup -2}, thus becoming capable to amorphize Si-ncs. High crystallization temperature of the amorphized Si-ncs is attributed to a counteraction of their shell layers. After implantation of the highest P fluences an enhanced recovery of PL was found from P concentration over 0.1 at.%. Raman spectroscopy and HREM showed an increased Si-ncs number in such layers. The effect resembles the impurity-enhanced crystallization, known for heavily doped bulk Si. This effect, along with the data obtained by XPS, is considered as an indication P atoms are really present inside the Si-ncs. However, no evidence of free electrons appearance has been observed. The fact is explained by an increased interaction of electrons with the donor nuclei in Si-ncs.

  19. Implantation of P ions in SiO2 layers with embedded Si nanocrystals

    International Nuclear Information System (INIS)

    Kachurin, G.A.; Cherkova, S.G.; Volodin, V.A.; Kesler, V.G.; Gutakovsky, A.K.; Cherkov, A.G.; Bublikov, A.V.; Tetelbaum, D.I.

    2004-01-01

    The effect of 10 13 -10 16 cm -2 P ions implantation and of subsequent annealing on Si nanocrystals (Si-ncs), formed preliminarily in SiO 2 layers by the ion-beam synthesis, has been studied. Photoluminescence (PL), Raman spectroscopy, high resolution electron microscopy (HREM), X-Ray Photoelectron Spectroscopy (XPS) and optical absorption were used for characterizations. The low fluence implantations have shown even individual displacements in Si-ncs quench their PL. Restoration of PL from partly damaged Si-ncs proceeds at annealing less than 1000 deg. C. In the low fluence implanted and annealed samples an increased Si-ncs PL has been found and ascribed to the radiation-induced shock crystallization of stressed Si nanoprecipitates. Annealing at temperatures under 1000 deg. C are inefficient when P ion fluences exceed 10 14 cm -2 , thus becoming capable to amorphize Si-ncs. High crystallization temperature of the amorphized Si-ncs is attributed to a counteraction of their shell layers. After implantation of the highest P fluences an enhanced recovery of PL was found from P concentration over 0.1 at.%. Raman spectroscopy and HREM showed an increased Si-ncs number in such layers. The effect resembles the impurity-enhanced crystallization, known for heavily doped bulk Si. This effect, along with the data obtained by XPS, is considered as an indication P atoms are really present inside the Si-ncs. However, no evidence of free electrons appearance has been observed. The fact is explained by an increased interaction of electrons with the donor nuclei in Si-ncs

  20. Si nanocrystals embedded in SiO2: Optical studies in the vacuum ultraviolet range

    DEFF Research Database (Denmark)

    Pankratov, V.; Osinniy, Viktor; Kotlov, A.

    2011-01-01

    done. It is demonstrated that the experimentally determined blueshift of the photoluminescence excitation and absorption spectra is larger than the theoretical predictions. The influence of point defects in the SiO2 matrix on the optical and luminescence properties of the embedded Si nanocrystals...... is discussed. Moreover, it is demonstrated that no energy transfer takes place between the SiO2 and Si nanocrystals when the excitation energy is higher than the band-to-band transition energy in SiO2....

  1. Photoluminescence studies of Li-doped Si nanocrystals

    Czech Academy of Sciences Publication Activity Database

    Klimešová, Eva; Vacík, Jiří; Holý, V.; Pelant, Ivan

    2013-01-01

    Roč. 3, č. 14 (2013), s. 1-7 ISSN 1847-9804 R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:68378271 ; RVO:61389005 Keywords : Si nanocrystals * photoluminescence * doping * Li-ion batteries Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.949, year: 2013

  2. Corroboration of Raman and AFM mapping to study Si nanocrystals embedded in SiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Rani, Ekta, E-mail: ades.ekta@gmail.com [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Homi Bhabha National Institute, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Ingale, Alka A. [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Homi Bhabha National Institute, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Chaturvedi, A. [Laser Material Processing Division, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Joshi, M.P.; Kukreja, L.M. [Homi Bhabha National Institute, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Laser Material Processing Division, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India)

    2016-07-05

    Raman and atomic force microscopy (AFM) mapping on the same selected area are used to get unique information about the morphology of Si nanocrystals (NCs) embedded in SiO{sub 2}, which is difficult to obtain by any other conventional technique. The sensitivity of Raman spectroscopy to surface/interface and confinement effects in NCs is effectively used to correlate the Raman intensity profile in Raman mapping with the topography obtained from AFM to understand that Si NCs are clustered in i) smaller clusters (∼100 nm) organized closely in two dimensions (2D) and ii) big (∼2 μm) three dimensional (3D) isolated clusters, although the growth is carried out to be multilayer (Si/SiO{sub 2}). Raman mapping performed by varying the focal spot along the depth shows stacking of larger (>∼60 Å) to smaller sizes (<∼40 Å) Si NCs from bottom to top for some clusters. To understand the observed morphologies, further study of specially grown Si–SiO{sub 2} nanocomposites is performed, which suggest formation of smaller Si NCs at the top due to annealing at 800 °C in Si rich SiO{sub 2} and possible existence of thermal gradient in an insulating matrix of SiO{sub 2.} Larger Si NCs are formed in the laser induced plume (plasma) itself. - Graphical abstract: a) Schematic showing the expected stacking of Si NCs obtained from Raman mapping, performed by changing focal spot along the depth, b) top, c) middle and d) bottom region of the cluster. - Highlights: • Methodology is developed to obtain Raman and AFM mapping at same selected area. • To get unique information, difficult to obtain using other conventional techniques. • Clusters (∼100 nm–2 μm) of Si nanocrystals embedded in SiO{sub 2} matrix are formed. • Stacking of Si nanocrystals from bottom to top (10–1 nm) is observed in some clusters. • Stacking of Si nanocrystals is understood as due to annealing and thermal gradient.

  3. Encapsulated Silicon Nanocrystals Formed in Silica by Ion Beam Synthesis

    International Nuclear Information System (INIS)

    Choi, Han Woo; Woo, Hyung Joo; Kim, Joon Kon; Kim, Gi Dong; Hong, Wan; Ji, Young Yong

    2004-01-01

    The photoluminescence (PL) emission of Si nanocrystals synthesized by 400 keV Si ion implanted in SiO 2 is studied as a function of ion dose and annealing time. The formation of nanocrystals at around 600 nm from the surface was confirmed by RBS and HRTEM, and the Si nanocrystals showed a wide and very intense PL emission at 700-900 nm. The intensity of this emission showed a typical behaviour with a fast transitory increase to reach a saturation with the annealing time, however, the red shift increased continuously because of the Ostwald ripening. The oversaturation of dose derived a decrease of PL intensity because of the diminishment of quantum confinement. A strong enhancement of PL intensity by H passivation was confirmed also, and the possible mechanism is discussed

  4. Laser-controlled stress of Si nanocrystals in a free-standing Si /SiO2 superlattice

    Science.gov (United States)

    Khriachtchev, Leonid; Räsänen, Markku; Novikov, Sergei

    2006-01-01

    We report laser manipulations with stress at the nanoscale level. The continuous-wave Ar+ laser radiation melts Si nanocrystals in a free-standing Si /SiO2 superlattice. Silicon crystallization from the liquid phase leads to a compressive stress, which can be accurately tuned in the 3GPa range using laser annealing below the Si melting temperature and then recovered by laser annealing above the melting temperature. This allows investigations of various phenomena as a function of stress and makes a case of Si-nanocrystal memory with very long retention time, which can be written, erased, and read by optical means.

  5. Laser-controlled stress of Si nanocrystals in a free-standing Si/SiO2 superlattice

    International Nuclear Information System (INIS)

    Khriachtchev, Leonid; Raesaenen, Markku; Novikov, Sergei

    2006-01-01

    We report laser manipulations with stress at the nanoscale level. The continuous-wave Ar + laser radiation melts Si nanocrystals in a free-standing Si/SiO 2 superlattice. Silicon crystallization from the liquid phase leads to a compressive stress, which can be accurately tuned in the 3 GPa range using laser annealing below the Si melting temperature and then recovered by laser annealing above the melting temperature. This allows investigations of various phenomena as a function of stress and makes a case of Si-nanocrystal memory with very long retention time, which can be written, erased, and read by optical means

  6. Structural and thermal characterization of polyvinylalcohol grafted SiC nanocrystals

    DEFF Research Database (Denmark)

    Saini, Isha; Sharma, Annu; Dhiman, Rajnish

    2017-01-01

    introduced in the characteristic TO and LO mode of vibration of SiC nanocrystals after grafting procedure.XRD analysis confirmed that the grafting procedure did not alter the crystalline geometry of SiC nanocrystals. TEM and SEM images further support the FTIR and Raman spectroscopic results and confirm...... of semiconducting SiC nanocrystals using a novel method. FTIR spectroscopy reveals the introduction of new peaks corresponding to various functional groups of PVA alongwith the presence of characteristic Si-C vibrational peak in the spectra of grafted SiC nanocrystals. Raman spectra depict the presence of changes...... the presence of PVA layer around SiC nanocrystals. Thermal degradation behavior of PVA-g-SiC nanocrystals has been studied using TGA analysis....

  7. 3C-SiC nanocrystal growth on 10° miscut Si(001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Deokar, Geetanjali, E-mail: gitudeo@gmail.com [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); D' Angelo, Marie; Demaille, Dominique [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Cavellin, Catherine Deville [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Faculté des Sciences et Technologie UPEC, 61 av. De Gaulle, Créteil F-94010 (France)

    2014-04-01

    The growth of 3C-SiC nano-crystal (NC) on 10° miscut Si(001) substrate by CO{sub 2} thermal treatment is investigated by scanning and high resolution transmission electron microscopies. The vicinal Si(001) surface was thermally oxidized prior to the annealing at 1100 °C under CO{sub 2} atmosphere. The influence of the atomic steps at the vicinal SiO{sub 2}/Si interface on the SiC NC growth is studied by comparison with the results obtained for fundamental Si(001) substrates in the same conditions. For Si miscut substrate, a substantial enhancement in the density of the SiC NCs and a tendency of preferential alignment of them along the atomic step edges is observed. The SiC/Si interface is abrupt, without any steps and epitaxial growth with full relaxation of 3C-SiC occurs by domain matching epitaxy. The CO{sub 2} pressure and annealing time effect on NC growth is analyzed. The as-prepared SiC NCs can be engineered further for potential application in optoelectronic devices and/or as a seed for homoepitaxial SiC or heteroepitaxial GaN film growth. - Highlights: • Synthesis of 3C-SiC nanocrystals epitaxied on miscut-Si using a simple technique • Evidence of domain matching epitaxy at the SiC/Si interface • SiC growth proceeds along the (001) plane of host Si. • Substantial enhancement of the SiC nanocrystal density due to the miscut • Effect of the process parameters (CO{sub 2} pressure and annealing duration)

  8. Structural and optical characterization of Mn doped ZnS nanocrystals elaborated by ion implantation in SiO2

    International Nuclear Information System (INIS)

    Bonafos, C.; Garrido, B.; Lopez, M.; Romano-Rodriguez, A.; Gonzalez-Varona, O.; Perez-Rodriguez, A.; Morante, J.R.; Rodriguez, R.

    1999-01-01

    Mn doped ZnS nanocrystals have been formed in SiO 2 layers by ion implantation and thermal annealing. The structural analysis of the processed samples has been performed mainly by Secondary Ion Mass Spectroscopy (SIMS) and Transmission Electron Microscopy (TEM). The data show the precipitation of ZnS nanocrystals self-organized into two layers parallel to the free surface. First results of the optical analysis of samples co-implanted with Mn show the presence of a yellow-green photoluminescence depending on the Mn concentration and the size of the nanocrystals, suggesting the doping with Mn of some precipitates

  9. Phosphorus doping of Si nanocrystals: Interface defects and charge compensation

    International Nuclear Information System (INIS)

    Stegner, A.R.; Pereira, R.N.; Klein, K.; Wiggers, H.; Brandt, M.S.; Stutzmann, M.

    2007-01-01

    Using electron paramagnetic resonance (EPR), Fourier-transform infrared absorption (FTIR) and temperature programmed desorption (TPD), we have investigated the doping of silicon nanocrystals (Si-ncs) and the interaction between intrinsic defects and dopants. Si-ncs were produced in a low-pressure microwave plasma reactor using silane as precursor gas. Phosphorus doping was achieved by addition of phosphine to the precursor gas. The low temperature EPR spectra of all P-doped samples display a line at g=1.998, which is the fingerprint of substitutional P in crystalline silicon for [P]>10 18 cm -3 . In addition, the characteristic hyperfine signature of P in Si is also observed for samples with nominal P doping levels below 10 19 cm -3 . Two more features are observed in our EPR spectra: a broad band located at g=2.0056, due to isotropic Si dangling bonds (Si-dbs), and an axially symmetric powder pattern (g perpendicular =2.0087,g parallel =2.0020) arising from Si-dbs at the interface between the crystalline Si core and a native oxide shell. The formation of this oxide layer and the presence of different H-termination configurations are revealed by FTIR spectroscopy. The density of Si-dbs is reduced in P-doped samples, indicating a sizable compensation of the doping by Si-dbs. This compensation effect was verified by H desorption, which enhances the density of Si-dbs, in combination with TPD and FTIR

  10. Superheating and supercooling of Ge nanocrystals embedded in SiO2

    International Nuclear Information System (INIS)

    Xu, Q; Sharp, I D; Yuan, C W; Yi, D O; Liao, C Y; Glaeser, A M; Minor, A M; Beeman, J W; Ridgway, M C; Kluth, P; Iii, J W Ager; Chrzan, D C; Haller, E E

    2007-01-01

    Free-standing nanocrystals exhibit a size-dependant thermodynamic melting point reduction relative to the bulk melting point that is governed by the surface free energy. The presence of an encapsulating matrix, however, alters the interface free energy of nanocrystals and their thermodynamic melting point can either increase or decrease relative to bulk. Furthermore, kinetic contributions can significantly alter the melting behaviours of embedded nanoscale materials. To study the effect of an encapsulating matrix on the melting behaviour of nanocrystals, we performed in situ electron diffraction measurements on Ge nanocrystals embedded in a silicon dioxide matrix. Ge nanocrystals were formed by multi-energy ion implantation into a 500 nm thick silica thin film on a silicon substrate followed by thermal annealing at 900 deg. C for 1 h. We present results demonstrating that Ge nanocrystals embedded in SiO 2 exhibit a 470 K melting/solidification hysteresis that is approximately symmetric about the bulk melting point. This unique behaviour, which is thought to be impossible for bulk materials, is well described using a classical thermodynamic model that predicts both kinetic supercooling and kinetic superheating. The presence of the silica matrix suppresses surface pre-melting of nanocrystals. Therefore, heterogeneous nucleation of both the liquid phase and the solid phase are required during the heating and cooling cycle. The magnitude of melting hysteresis is governed primarily by the value of the liquid Ge/solid Ge interface free energy, whereas the relative values of the solid Ge/matrix and liquid Ge/matrix interface free energies govern the position of the hysteresis loop in absolute temperature

  11. Microscopic and macroscopic characterization of the charging effects in SiC/Si nanocrystals/SiC sandwiched structures

    International Nuclear Information System (INIS)

    Xu, Jie; Xu, Jun; Wang, Yuefei; Cao, Yunqing; Li, Wei; Yu, Linwei; Chen, Kunji

    2014-01-01

    Microscopic charge injection into the SiC/Si nanocrystals/SiC sandwiched structures through a biased conductive AFM tip is subsequently characterized by both electrostatic force microscopy and Kelvin probe force microscopy (KPFM). The charge injection and retention characteristics are found to be affected by not only the band offset at the Si nanocrystals/SiC interface but also the doping type of the Si substrate. On the other hand, capacitance–voltage (C–V) measurements investigate the macroscopic charging effect of the sandwiched structures with a thicker SiC capping layer, where the charges are injected from the Si substrates. The calculated macroscopic charging density is 3–4 times that of the microscopic one, and the possible reason is the underestimation of the microscopic charging density caused by the averaging effect and detection delay in the KPFM measurements. (paper)

  12. Fabrication of multilayered Ge nanocrystals embedded in SiOxGeNy films

    International Nuclear Information System (INIS)

    Gao Fei; Green, Martin A.; Conibeer, Gavin; Cho, Eun-Chel; Huang Yidan; Perez-Wurfl, Ivan; Flynn, Chris

    2008-01-01

    Multilayered Ge nanocrystals embedded in SiO x GeN y films have been fabricated on Si substrate by a (Ge + SiO 2 )/SiO x GeN y superlattice approach, using a rf magnetron sputtering technique with a Ge + SiO 2 composite target and subsequent thermal annealing in N 2 ambient at 750 deg. C for 30 min. X-ray diffraction (XRD) measurement indicated the formation of Ge nanocrystals with an average size estimated to be 5.4 nm. Raman scattering spectra showed a peak of the Ge-Ge vibrational mode downward shifted to 299.4 cm -1 , which was caused by quantum confinement of phonons in the Ge nanocrystals. Transmission electron microscopy (TEM) revealed that Ge nanocrystals were confined in (Ge + SiO 2 ) layers. This superlattice approach significantly improved both the size uniformity of Ge nanocrystals and their uniformity of spacing on the 'Z' growth direction

  13. InAs nanocrystals on SiO2/Si by molecular beam epitaxy for memory applications

    International Nuclear Information System (INIS)

    Hocevar, Moiera; Regreny, Philippe; Descamps, Armel; Albertini, David; Saint-Girons, Guillaume; Souifi, Abdelkader; Gendry, Michel; Patriarche, Gilles

    2007-01-01

    We studied a memory structure based on InAs nanocrystals grown by molecular beam epitaxy directly on thermal SiO 2 on silicon. Both nanocrystal diameter and density can be controlled by growth parameters. Transmission electron microscopy analysis shows high crystallinity and low size dispersion. In an electrical test structure with a 3.5 nm tunnel oxide, we observed that 80% of the initial injected electrons remain stored in the InAs nanocrystals after 3 months and that the retention time for electrons in InAs nanocrystals is four orders of magnitude higher than in silicon nanocrystals

  14. Inhibitive formation of nanocavities by introduction of Si atoms in Ge nanocrystals produced by ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Cai, R. S.; Shang, L.; Liu, X. H.; Zhang, Y. J. [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); Wang, Y. Q., E-mail: yqwang@qdu.edu.cn, E-mail: barba@emt.inrs.ca [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); College of Physics Science, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); Ross, G. G.; Barba, D., E-mail: yqwang@qdu.edu.cn, E-mail: barba@emt.inrs.ca [INRS-Énergie, Matériaux et Télécommunications, 1650 boulevard Lionel-Boulet, Varennes Québec J3X 1S2 (Canada)

    2014-05-28

    Germanium nanocrystals (Ge-nc) were successfully synthesized by co-implantation of Si and Ge ions into a SiO{sub 2} film thermally grown on (100) Si substrate and fused silica (pure SiO{sub 2}), respectively, followed by subsequent annealing at 1150 °C for 1 h. Transmission electron microscopy (TEM) examinations show that nanocavities only exist in the fused silica sample but not in the SiO{sub 2} film on a Si substrate. From the analysis of the high-resolution TEM images and electron energy-loss spectroscopy spectra, it is revealed that the absence of nanocavities in the SiO{sub 2} film/Si substrate is attributed to the presence of Si atoms inside the formed Ge-nc. Because the energy of Si-Ge bonds (301 kJ·mol{sup −1}) are greater than that of Ge-Ge bonds (264 kJ·mol{sup −1}), the introduction of the Si-Ge bonds inside the Ge-nc can inhibit the diffusion of Ge from the Ge-nc during the annealing process. However, for the fused silica sample, no crystalline Si-Ge bonds are detected within the Ge-nc, where strong Ge outdiffusion effects produce a great number of nanocavities. Our results can shed light on the formation mechanism of nanocavities and provide a good way to avoid nanocavities during the process of ion implantation.

  15. Ultra-low-energy ion-beam synthesis of nanometer-separated Si nanoparticles and Ag nanocrystals 2D layers

    Science.gov (United States)

    Carrada, M.; Haj Salem, A.; Pecassou, B.; Paillard, V.; Ben Assayag, G.

    2018-03-01

    2D networks of Si and Ag nanocrystals have been fabricated in the same SiO2 matrix by Ultra-Low-Energy Ion-Beam-Synthesis. Our synthesis scheme differs from a simple sequential ion implantation and its key point is the control of the matrix integrity through an appropriate intermediate thermal annealing. Si nanocrystal layer is synthesised first due to high thermal budget required for nucleation, while the second Ag nanocrystal plane is formed during a subsequent implantation due to the high diffusivity of Ag in silica. The aim of this work is to show how it is possible to overcome the limitation related to ion mixing and implantation damage to obtain double layers of Si-NCs and Ag-NCs with controlled characteristics. For this, we take advantage of annealing under slight oxidizing ambient to control the oxidation of Si-NCs and the Si excess in the matrix. The nanocrystal characteristics and in particular their position and size can be adjusted thanks to a compromise between the implantation energy, the implanted dose for both Si and Ag ions and the intermediate annealing conditions (atmosphere, temperature and duration).

  16. Ge nanocrystals embedded in ultrathin Si3N4 multilayers with SiO2 barriers

    Science.gov (United States)

    Bahariqushchi, R.; Gundogdu, Sinan; Aydinli, A.

    2017-04-01

    Multilayers of germanium nanocrystals (NCs) embedded in thin films of silicon nitride matrix separated with SiO2 barriers have been fabricated using plasma enhanced chemical vapor deposition (PECVD). SiGeN/SiO2 alternating bilayers have been grown on quartz and Si substrates followed by post annealing in Ar ambient from 600 to 900 °C. High resolution transmission electron microscopy (HRTEM) as well as Raman spectroscopy show good crystallinity of Ge confined to SiGeN layers in samples annealed at 900 °C. Strong compressive stress for SiGeN/SiO2 structures were observed through Raman spectroscopy. Size, as well as NC-NC distance were controlled along the growth direction for multilayer samples by varying the thickness of bilayers. Visible photoluminescence (PL) at 2.3 and 3.1 eV with NC size dependent intensity is observed and possible origin of PL is discussed.

  17. Migration of CrSi2 nanocrystals through nanopipes in the silicon cap

    International Nuclear Information System (INIS)

    Galkin, N.G.; Dozsa, L.; Chusovitin, E.A.; Pecz, B.; Dobos, L.

    2010-01-01

    CrSi 2 nanocrystals (NC) were grown by reactive deposition epitaxy of Cr at 550 deg. C. After deposition the Cr is localized in about 20-30 nm dots on the Si surface. The NCs were covered by silicon cap grown by molecular beam epitaxy at 700 deg. C. The redistribution of NCs in the silicon cap was investigated by transmission electron microscopy and atomic force microscopy. The NCs are partly localized at the deposition depth, and partly migrate near the surface. A new migration mechanism of the CrSi 2 NCs is observed, they are transferred from the bulk toward the surface through nanopipes formed in the silicon cap. The redistribution of CrSi 2 NCs strongly depends on Cr deposition rate and on the cap growth temperature.

  18. Optimization of the luminescence emission of Si nanocrystals synthesized from non-stoichiometric Si oxides using a Central Composite Design of the deposition process

    International Nuclear Information System (INIS)

    Morana, B.; Sande, J.C.G. de; Rodriguez, A.; Sangrador, J.; Rodriguez, T.; Avella, M.; Jimenez, J.

    2008-01-01

    Si oxide films with a controlled excess of Si were deposited on Si wafers by LPCVD using Si 2 H 6 and O 2 , thermally annealed to 1100 deg. C for 1 h to form Si nanocrystals embedded in SiO 2 and subsequently annealed at 450 deg. C in forming gas. The samples were characterized by Fourier transform infrared spectroscopy, spectroscopic ellipsometry and cathodoluminescence spectroscopy. The excess of Si in the as-deposited samples, ranging from 0 to 70% in volume, was obtained from the ellipsometry data analysis. After annealing at 1100 deg. C, the samples show a luminescence band (peaking at 665 nm) at 80 K and at room temperature which is associated to the presence of Si nanocrystals. The growth rate, the excess of Si incorporated to the films and the intensity of the luminescence band were modelled using a Face-Centered Central Composite Design as a function of the main deposition variables (pressure, 185-300 mTorr; temperature, 250-400 deg. C; Si 2 H 6 /O 2 flow ratio, 2-5) aiming to control the growth process and the incorporation of Si in excess as well as to determine the experimental conditions that yield the samples with the maximum intensity of the luminescence emission

  19. Model for efficient visible emission from Si nanocrystals ion beam synthesized in SiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Lopez, M. E-mail: mlopez@el.ub.es; Garrido, B.; Bonafos, C.; Perez-Rodriguez, A.; Morante, J.R.; Claverie, A

    2001-05-01

    The photoluminescence (PL) emission of Si nanocrystals ion beam synthesized in SiO{sub 2} is studied in this work as a function of annealing time and initial Si atomic excess (super-saturation). The optical properties of this system have been correlated with the characteristics of the nanocrystal population. The Si nanocrystals show a wide and very intense PL red/infrared emission. This emission peaks at about 1.7 eV for the low super-saturation range between 1% and 10% and shifts to the infrared for higher super-saturation (20% and 30%). Remarkably, there is a linear increase of PL intensity versus super-saturation in the low range. Moreover, the annealing kinetic studies show a typical behavior of PL intensity with annealing time, with a fast transitory increase that bends over to reach asymptotic saturation. The PL intensity saturation is satisfactorily explained by the Ostwald ripening stage of the nanocrystal population while the transient stage is a consequence of both nanocrystal growth and nanocrystal surface passivation mechanisms acting together. Indeed, electron spin resonance measurements demonstrate that the concentration of P{sub b} centers (Si dangling bonds) at the Si-SiO{sub 2} interface correlates inversely with PL intensity during most of the transient stage.

  20. Structural, spectroscopic and cytotoxicity studies of TbF3@CeF3 and TbF3@CeF3@SiO2 nanocrystals

    International Nuclear Information System (INIS)

    Grzyb, Tomasz; Runowski, Marcin; Dąbrowska, Krystyna; Giersig, Michael; Lis, Stefan

    2013-01-01

    Terbium fluoride nanocrystals, covered by a shell, composed of cerium fluoride were synthesized by a co-precipitation method. Their complex structure was formed spontaneously during the synthesis. The surface of these core/shell nanocrystals was additionally modified by silica. The properties of TbF 3 @CeF 3 and TbF 3 @CeF 3 @SiO 2 nanocrystals, formed in this way, were investigated. Spectroscopic studies showed that the differences between these two groups of products resulted from the presence of the SiO 2 shell. X-ray diffraction patterns confirmed the trigonal crystal structure of TbF 3 @CeF 3 nanocrystals. High resolution transmission electron microscopy in connection with energy-dispersive X-ray spectroscopy showed a complex structure of the formed nanocrystals. Crystallized as small discs, ‘the products’, with an average diameter around 10 nm, showed an increase in the concentration of Tb 3+ ions from surface to the core of nanocrystals. In addition to photo-physical analyses, cytotoxicity studies were performed on HSkMEC (Human Skin Microvascular Endothelial Cells) and B16F0 mouse melanoma cancer cells. The cytotoxicity of the nanomaterials was neutral for the investigated cells with no toxic or antiproliferative effect in the cell cultures, either for normal or for cancer cells. This fact makes the obtained nanocrystals good candidates for biological applications and further modifications of the SiO 2 shell.Graphical Abstract

  1. Observation of spin-selective tunneling in SiGe nanocrystals.

    Science.gov (United States)

    Katsaros, G; Golovach, V N; Spathis, P; Ares, N; Stoffel, M; Fournel, F; Schmidt, O G; Glazman, L I; De Franceschi, S

    2011-12-09

    Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in the valence band of the semiconductor. We demonstrate both experimentally and theoretically that spin-selective tunneling in semiconductor nanostructures can be achieved without the use of ferromagnetic contacts. The reported effect, which relies on mixing the light and heavy holes, should be observable in a broad class of quantum-dot systems formed in semiconductors with a degenerate valence band.

  2. Effect of hydrostatic pressure on photoluminescence spectra from structures with Si nanocrystals fabricated in SiO2 matrix

    International Nuclear Information System (INIS)

    Zhuravlev, K.S.; Tyschenko, I.E.; Vandyshev, E.N.; Bulytova, N.V.; Misiuk, A.; Rebohle, L.; Skorupa, W.

    2002-01-01

    The effect of hydrostatic pressure applied at high temperature on photoluminescence of Si-implanted SiO 2 films was studied. A 'blue'-shift of PL spectrum from the SiO 2 films implanted with Si + ions to total dose of 1.2x10 17 cm -2 with increase in hydrostatic pressure was observed. For the films implanted with Si + ions to a total dose of 4.8x10 16 cm -2 high temperature annealing under high hydrostatic pressure (12 kbar) causes a 'red'-shift of photoluminescence spectrum. The 'red' photoluminescence bands are attributed to Si nanocrystals while the 'blue' ones are related to Si nanocrystals of reduced size or chains of silicon atoms or Si-Si defects. A decrease in size of Si nanocluster occurs in result of the pressure-induced decrease in the diffusion of silicon atoms. (author)

  3. Electrical resistivity of nanocrystals in Fe-Al-Ga-P-B-Si-Cu alloy

    International Nuclear Information System (INIS)

    Pekala, K.; Jaskiewicz, P.; Nowinski, J.L.; Pekala, M.

    2003-01-01

    In new supercooled Fe 74 Al 4 Ga 2 P 11 B 4 Si 4 Cu 1 alloy the 10 nm size α-Fe(Si) nanocrystals are precipitated. Thermal stability is analyzed by the electron transport and magnetization measurements. Temperature variation of electrical resistivity of nanocrystals is determined and discussed for alloys with different initial crystalline fraction. Possible mechanism inhibiting the grain growth is presented

  4. Structural and optical characterization of Mn doped ZnS nanocrystals elaborated by ion implantation in SiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Bonafos, C. E-mail: bonafos@el.ub.es; Garrido, B.; Lopez, M.; Romano-Rodriguez, A.; Gonzalez-Varona, O.; Perez-Rodriguez, A.; Morante, J.R.; Rodriguez, R

    1999-01-01

    Mn doped ZnS nanocrystals have been formed in SiO{sub 2} layers by ion implantation and thermal annealing. The structural analysis of the processed samples has been performed mainly by Secondary Ion Mass Spectroscopy (SIMS) and Transmission Electron Microscopy (TEM). The data show the precipitation of ZnS nanocrystals self-organized into two layers parallel to the free surface. First results of the optical analysis of samples co-implanted with Mn show the presence of a yellow-green photoluminescence depending on the Mn concentration and the size of the nanocrystals, suggesting the doping with Mn of some precipitates.

  5. Functionalized SiC nanocrystals for tuning of optical, thermal, mechanical and electrical properties of polyvinyl alcohol

    DEFF Research Database (Denmark)

    Saini, Isha; Sharma, Annu; Dhiman, Rajnish

    2017-01-01

     MPa for PVA to 45 MPa for PVA-SiC nanocomposite film containing 0.023 wt% f-SiC nanocrystals at an applied load of 9.8 mN indicating improved interfacial interaction. Current-voltage analysis indicated an increase in conductivity of PVA with the introduction of f-SiC nanocrystals. The conduction......Polyvinyl alcohol (PVA)-SiC nanocomposite films were prepared by incorporating functionalized Silicon Carbide (f-SiC) nanocrystals in PVA matrix. Structural characterization of SiC nanocrystals before and after the functionalization was carried out using Fourier transform infrared spectroscopy...... (FTIR), X-ray diffraction (XRD) and Thermogravimetric analysis (TGA). Transmission electron microscopy (TEM) and Scanning Electron Microscopy (SEM) were used to study the morphology and size distribution of f-SiC nanocrystals in PVA-SiC nanocomposite films. TEM and SEM images depict an improved...

  6. Trapping time of excitons in Si nanocrystals embedded in a SiO2 matrix

    Science.gov (United States)

    de Jong, E. M. L. D.; de Boer, W. D. A. M.; Yassievich, I. N.; Gregorkiewicz, T.

    2017-05-01

    Silicon (Si) nanocrystals (NCs) are of great interest for many applications, ranging from photovoltaics to optoelectonics. The photoluminescence quantum yield of Si NCs dispersed in SiO2 is limited, suggesting the existence of very efficient processes of nonradiative recombination, among which the formation of a self-trapped exciton state on the surface of the NC. In order to improve the external quantum efficiency of these systems, the carrier relaxation and recombination need to be understood more thoroughly. For that purpose, we perform transient-induced absorption spectroscopy on Si NCs embedded in a SiO2 matrix over a broad probe range for NCs of average sizes from 2.5 to 5.5 nm. The self-trapping of free excitons on surface-related states is experimentally and theoretically discussed and found to be dependent on the NC size. These results offer more insight into the self-trapped exciton state and are important to increase the optical performance of Si NCs.

  7. Study of temperature-dependent charge conduction in silicon-nanocrystal/SiO_2 multilayers

    International Nuclear Information System (INIS)

    Mavilla, Narasimha Rao; Chavan, Vinayak; Solanki, Chetan Singh; Vasi, Juzer

    2016-01-01

    Silicon-nanocrystals (Si-NCs) realized by SiO_x _ 8 MV/cm; independent of temperature), while for lower electric fields (5–8 MV/cm) at higher temperatures, the trap-related Generalized Poole–Frenkel (GPF) is dominant. This signified the role of traps in modifying the conduction in bulk ICPCVD SiO_2 films. We then present the conduction in ML samples. For multilayer samples with SiO_2 sublayer thickness of 1.5 nm and 2.5 nm, Direct Tunneling (DT) is observed to be dominant, while for SiO_2 sublayer thickness of 3.5 nm, Space Charge Limited Conduction (SCLC) with exponential trap distribution is found to be the dominant conduction mechanism. This signifies the role of traps in modifying the conduction in Si-NC multilayer samples and SiO_2 sublayer thickness dependence. - Highlights: • Electrical conduction in SiO_2 film & Si-nanocrystal layers (Si-NCs) is reported. • SiO_2/SiO_x multilayer based Si-NCs were realized by Inductively Coupled plasma CVD. • For SiO_2 film, Fowler–Nordheim tunneling & Generalized Poole–Frenkel are observed. • For Si-NCs with thin SiO_2 sublayers (< 2.5 nm) Direct Tunneling is dominant. • For Si-NCs with 3.5 nm SiO_2 sublayers Space Charge Limited Conduction is dominant.

  8. Synthesis and charge storage properties of double-layered NiSi nanocrystals

    International Nuclear Information System (INIS)

    Yoon, Jong-Hwan

    2010-01-01

    Based on bidirectional diffusion of Ni atoms, double-layered nickel silicide (NiSi) nanocrystals (NCs) for multilevel charge storage were fabricated, and their charge storage properties were examined. The double layer was produced by long-term thermal annealing (for 4 h at 900 o C) of a sandwich structure comprised of a thin Ni film of 0.3 nm sandwiched between two silicon-rich oxide (SiO 1.36 ) layers. Transmission electron microscopic image clearly exhibits a distinct NiSi nanocrystal double layer with a gap of about 7 nm between the mean positions of particle distribution in each NC layer. Capacitance-voltage measurements on the metal/oxide/semiconductor (MOS) capacitors with the double-layered NiSi nanocrystals are shown to have the apparent two plateaus of charge storage, the large memory window of about 9 V and the improved charge retention stability.

  9. Influence of preparation and storage conditions on photoluminescence of porous silicon powder with embedded Si nanocrystals

    International Nuclear Information System (INIS)

    Bychto, Leszek; Balaguer, Maria; Pastor, Ester; Chirvony, Vladimir; Matveeva, Eugenia

    2008-01-01

    The time changes of photoluminescence (PL) characteristics of porous silicon (porSi) powder during storing in different ambients have been reported. A porous silicon material with embedded Si nanocrystals of size of few nanometers was prepared by an electrochemical method from 10 to 20 Ωcm p-type Si wafers, and both constant and pulse current anodization regimes were used. A powder with a submicron average particle size was obtained by simple mechanical lift-off of the porous layer followed by additional manual milling. The air, hexane, and water as storage media were used, and modification by a nonionic surfactant (undecylenic acid) of the porSi surface was applied in the latter case. Dependence of PL characteristics on preparation and storage conditions was then studied. A remarkable blue shift of a position of PL maximum was observed in time for porSi powders in each storage media. In water suspension a many-fold build-up (10-30) of PL intensity in a time scale of few days was accompanied by an observed blue shift. Photoluminescence time behavior of porSi powders was described by a known mechanism of the change of porSi PL from free exciton emission of Si nanocrystals to luminescence of localized oxidized states on the Si nanocrystal surface.

  10. Influence of preparation and storage conditions on photoluminescence of porous silicon powder with embedded Si nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Bychto, Leszek, E-mail: leszek.bychto@tu.koszalin.pl; Balaguer, Maria; Pastor, Ester; Chirvony, Vladimir; Matveeva, Eugenia, E-mail: eumat@upvnet.upv.e [Technical University of Valencia, Nanophotonics Technology Center (Spain)

    2008-12-15

    The time changes of photoluminescence (PL) characteristics of porous silicon (porSi) powder during storing in different ambients have been reported. A porous silicon material with embedded Si nanocrystals of size of few nanometers was prepared by an electrochemical method from 10 to 20 {Omega}cm p-type Si wafers, and both constant and pulse current anodization regimes were used. A powder with a submicron average particle size was obtained by simple mechanical lift-off of the porous layer followed by additional manual milling. The air, hexane, and water as storage media were used, and modification by a nonionic surfactant (undecylenic acid) of the porSi surface was applied in the latter case. Dependence of PL characteristics on preparation and storage conditions was then studied. A remarkable blue shift of a position of PL maximum was observed in time for porSi powders in each storage media. In water suspension a many-fold build-up (10-30) of PL intensity in a time scale of few days was accompanied by an observed blue shift. Photoluminescence time behavior of porSi powders was described by a known mechanism of the change of porSi PL from free exciton emission of Si nanocrystals to luminescence of localized oxidized states on the Si nanocrystal surface.

  11. Influence of preparation and storage conditions on photoluminescence of porous silicon powder with embedded Si nanocrystals

    Science.gov (United States)

    Bychto, Leszek; Balaguer, Maria; Pastor, Ester; Chirvony, Vladimir; Matveeva, Eugenia

    2008-12-01

    The time changes of photoluminescence (PL) characteristics of porous silicon (porSi) powder during storing in different ambients have been reported. A porous silicon material with embedded Si nanocrystals of size of few nanometers was prepared by an electrochemical method from 10 to 20 Ωcm p-type Si wafers, and both constant and pulse current anodization regimes were used. A powder with a submicron average particle size was obtained by simple mechanical lift-off of the porous layer followed by additional manual milling. The air, hexane, and water as storage media were used, and modification by a nonionic surfactant (undecylenic acid) of the porSi surface was applied in the latter case. Dependence of PL characteristics on preparation and storage conditions was then studied. A remarkable blue shift of a position of PL maximum was observed in time for porSi powders in each storage media. In water suspension a many-fold build-up (10-30) of PL intensity in a time scale of few days was accompanied by an observed blue shift. Photoluminescence time behavior of porSi powders was described by a known mechanism of the change of porSi PL from free exciton emission of Si nanocrystals to luminescence of localized oxidized states on the Si nanocrystal surface.

  12. The structure and properties of vacancies in Si nano-crystals calculated by real space pseudopotential methods

    International Nuclear Information System (INIS)

    Beckman, S.P.; Chelikowsky, James R.

    2007-01-01

    The structure and properties of vacancies in a 2 nm Si nano-crystal are studied using a real space density functional theory/pseudopotential method. It is observed that a vacancy's electronic properties and energy of formation are directly related to the local symmetry of the vacancy site. The formation energy for vacancies and Frenkel pair are calculated. It is found that both defects have lower energy in smaller crystals. In a 2 nm nano-crystal the energy to form a Frenkel pair is 1.7 eV and the energy to form a vacancy is no larger than 2.3 eV. The energy barrier for vacancy diffusion is examined via a nudged elastic band algorithm

  13. Emission Mechanisms of Si Nanocrystals and Defects in SiO2 Materials

    Directory of Open Access Journals (Sweden)

    José Antonio Rodríguez

    2014-01-01

    Full Text Available Motivated by the necessity to have all silicon optoelectronic circuits, researchers around the world are working with light emitting silicon materials. Such materials are silicon dielectric compounds with silicon content altered, such as silicon oxide or nitride, enriched in different ways with Silicon. Silicon Rich Oxide or silicon dioxide enriched with silicon, and silicon rich nitride are without a doubt the most promising materials to reach this goal. Even though they are subjected to countless studies, the light emission phenomenon has not been completely clarified. So, a review of different proposals presented to understand the light emission phenomenon including emissions related to nanocrystals and to point defects in SiO2 is presented.

  14. Passivation effects in B doped self-assembled Si nanocrystals

    International Nuclear Information System (INIS)

    Puthen Veettil, B.; Wu, Lingfeng; Jia, Xuguang; Lin, Ziyun; Zhang, Tian; Yang, Terry; Johnson, Craig; Conibeer, Gavin; Perez-Würfl, Ivan; McCamey, Dane

    2014-01-01

    Doping of semiconductor nanocrystals has enabled their widespread technological application in optoelectronics and micro/nano-electronics. In this work, boron-doped self-assembled silicon nanocrystal samples have been grown and characterised using Electron Spin Resonance and photoluminescence spectroscopy. The passivation effects of boron on the interface dangling bonds have been investigated. Addition of boron dopants is found to compensate the active dangling bonds at the interface, and this is confirmed by an increase in photoluminescence intensity. Further addition of dopants is found to reduce the photoluminescence intensity by decreasing the minority carrier lifetime as a result of the increased number of non-radiative processes

  15. Effects of phosphorus doping on structural and optical properties of silicon nanocrystals in a SiO2 matrix

    International Nuclear Information System (INIS)

    Hao, X.J.; Cho, E.-C.; Scardera, G.; Bellet-Amalric, E.; Bellet, D.; Shen, Y.S.; Huang, S.; Huang, Y.D.; Conibeer, G.; Green, M.A.

    2009-01-01

    Promise of Si nanocrystals highly depends on tailoring their behaviour through doping. Phosphorus-doped silicon nanocrystals embedded in a silicon dioxide matrix have been realized by a co-sputtering process. The effects of phosphorus-doping on the properties of Si nanocrystals are investigated. Phosphorus diffuses from P-P and/or P-Si to P-O upon high temperature annealing. The dominant X-ray photoelectron spectroscopy P 2p signal attributable to Si-P and/or P-P (130 eV) at 1100 o C indicates that the phosphorus may exist inside Si nanocrystals. It is found that existence of phosphorus enhances phase separation of silicon rich oxide and thereby Si crystallization. In addition, phosphorus has a considerable effect on the optical absorption and photoluminescence properties as a function of annealing temperature.

  16. Effect of Si implantation on the microstructure of silicon nanocrystals and surrounding SiO2 layer

    International Nuclear Information System (INIS)

    Ross, G.G.; Smirani, R.; Levitcharsky, V.; Wang, Y.Q.; Veilleux, G.; Saint-Jacques, R.G.

    2005-01-01

    Si nanocrystals (Si-nc) embedded in a SiO 2 layer have been characterized by means of transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). For local Si concentration in excess 8 x 10 21 Si + /cm 3 , the size of the Si-nc was found to be ∼3 nm and comparatively homogeneous throughout the whole implanted layer. For local Si concentration in excess of ∼2.4 x 10 22 Si + /cm 3 , the Si-nc diameter ranges from ∼2 to ∼12 nm in the sample, the Si-nc in the middle region of the implanted layer being bigger than those near the surface and the bottom of the layer. Also, Si-nc are visible deeper than the implanted depth. Characterization by XPS shows that a large quantity of oxygen was depleted from the first ∼25 nm in this sample (also visible on TEM image) and most of the SiO 2 bonds have been replaced by Si-O bonds. Experimental and simulation results suggest that a local Si concentration in excess of ∼3 x 10 21 Si/cm 3 is required for the production of Si-nc

  17. Structural and electronic properties of Si/SiO2 MOS structures with aligned 3C-SiC nanocrystals in the oxide

    International Nuclear Information System (INIS)

    Pongracz, A.; Battistig, G.; Duecso, Cs.; Josepovits, K.V.; Deak, P.

    2007-01-01

    Our group previously proved that a simple reactive annealing in CO containing gas produces 3C-SiC nanocrystals, which are epitaxially and void-free aligned in the Si substrate. By a further thermal oxidation step, these nanocrystals can be lifted from the Si and incorporated into the SiO 2 matrix, thereby creating a promising structure for charge storage. In this work the structural and electrical properties of such systems with nanocrystalline SiC will be presented. Prototype MOS structures with 3C-SiC nanocrystals were produced for current-voltage and capacitance-voltage measurements. The results indicate that the high-temperature annealing did not damage the MOS structure, despite the fact that the CO annealing changed the electrical properties of the system. There was a positive charge accumulation and a reversible carrier injection observed in the structure. We assume that the positive charges originated from oxygen vacancies and the charge injection is related to the presence of SiC nanocrystals

  18. Study of temperature-dependent charge conduction in silicon-nanocrystal/SiO{sub 2} multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Mavilla, Narasimha Rao; Chavan, Vinayak [National Centre for Photovoltaic Research and Education (NCPRE), Powai, Mumbai 400 076 (India); Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400 076 (India); Solanki, Chetan Singh [National Centre for Photovoltaic Research and Education (NCPRE), Powai, Mumbai 400 076 (India); Department of Energy Science and Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400 076 (India); Vasi, Juzer [National Centre for Photovoltaic Research and Education (NCPRE), Powai, Mumbai 400 076 (India); Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400 076 (India)

    2016-08-01

    Silicon-nanocrystals (Si-NCs) realized by SiO{sub x} {sub <} {sub 2}/SiO{sub 2} multilayer (ML) approach have shown promise for realizing tightly-controlled dimensions, thus efficiently exploiting the size-dependent quantum effects for device applications. Unfortunately, the confining insulating barriers (SiO{sub 2} sublayers), instrumental for realizing quantum size effects in Si-NC MLs, can also hinder the charge conduction which is crucial for device applications including Si-NC based tandem solar cells and multi-exciton solar cells. Owing to this, a comprehensive study of conduction mechanisms has been carried out using a thorough analysis of temperature-dependent dark I-V measurements of SiO{sub 2} thin film and Si-NC multilayer samples fabricated by Inductively Coupled Plasma CVD (ICPCVD). As the ML samples consisted of interleaved SiO{sub 2} sublayers, current in SiO{sub 2} thin film has initially been studied to understand the conduction properties of bulk ICPCVD SiO{sub 2}. For 21 nm thick SiO{sub 2} film, conduction is observed to be dominated by Fowler–Nordheim (FN) tunneling for higher electric fields (> 8 MV/cm; independent of temperature), while for lower electric fields (5–8 MV/cm) at higher temperatures, the trap-related Generalized Poole–Frenkel (GPF) is dominant. This signified the role of traps in modifying the conduction in bulk ICPCVD SiO{sub 2} films. We then present the conduction in ML samples. For multilayer samples with SiO{sub 2} sublayer thickness of 1.5 nm and 2.5 nm, Direct Tunneling (DT) is observed to be dominant, while for SiO{sub 2} sublayer thickness of 3.5 nm, Space Charge Limited Conduction (SCLC) with exponential trap distribution is found to be the dominant conduction mechanism. This signifies the role of traps in modifying the conduction in Si-NC multilayer samples and SiO{sub 2} sublayer thickness dependence. - Highlights: • Electrical conduction in SiO{sub 2} film & Si-nanocrystal layers (Si-NCs) is reported. • Si

  19. Nonvolatile memory characteristics influenced by the different crystallization of Ni-Si and Ni-N nanocrystals

    International Nuclear Information System (INIS)

    Chen, W.-R.; Yeh, J.-L.; Chang, C.-Y.; Chang, T.-C.; Chen, S.-C.

    2008-01-01

    The formation of Ni-Si and Ni-N nanocrystals by sputtering a Ni 0.3 Si 0.7 target in argon and nitrogen environment were proposed in this paper. A transmission electron microscope analysis shows the nanocrystals embedded in the nitride layer. X-ray photoelectron spectroscopy and x-ray diffraction also offer the chemical material analysis of nanocrystals with surrounding dielectric and the crystallization of nanocrystals for different thermal annealing treatments. Nonvolatile Ni-Si nanocrystal memories reveal superior electrical characteristics for charge storage capacity and reliability due to the improvement of thermal annealing treatment. In addition, we used energy band diagrams to explain the significance of surrounding dielectric for reliability

  20. Enhanced formation of Ge nanocrystals in Ge : SiO2 layers by swift heavy ions

    International Nuclear Information System (INIS)

    Antonova, I V; Volodin, V A; Marin, D M; Skuratov, V A; Smagulova, S A; Janse van Vuuren, A; Neethling, J; Jedrzejewski, J; Balberg, I

    2012-01-01

    In this paper we report the ability of swift heavy Xe ions with an energy of 480 MeV and a fluence of 10 12 cm -2 to enhance the formation of Ge nanocrystals within SiO 2 layers with variable Ge contents. These Ge-SiO 2 films were fabricated by the co-sputtering of Ge and quartz sources which followed various annealing procedures. In particular, we found that the irradiation of the Ge : SiO 2 films with subsequent annealing at 500 °C leads to the formation of a high concentration of nanocrystals (NCs) with a size of 2-5 nm, whereas without irradiation only amorphous inclusions were observed. This effect, as evidenced by Raman spectra, is enhanced by pre-irradiation at 550 °C and post-irradiation annealing at 600 °C, which also leads to the observation of room temperature visible photoluminescence. (paper)

  1. SiC nanocrystals as Pt catalyst supports for fuel cell applications

    DEFF Research Database (Denmark)

    Dhiman, Rajnish; Morgen, Per; Skou, E.M.

    2013-01-01

    A robust catalyst support is pivotal to Proton Exchange Membrane Fuel Cells (PEMFCs) to overcome challenges such as catalyst support corrosion, low catalyst utilization and overall capital cost. SiC is a promising candidate material which could be applied as a catalyst support in PEMFCs. Si...... on the nanocrystals of SiC-SPR and SiC-NS by the polyol method. The SiC substrates are subjected to an acid treatment to introduce the surface groups, which help to anchor the Pt nano-catalysts. These SiC based catalysts have been found to have a higher electrochemical activity than commercially available Vulcan...... based catalysts (BASF & HISPEC). These promising results signal a new era of SiC based catalysts for fuel cell applications....

  2. Plasmon-assisted photoluminescence enhancement of SiC nanocrystals by proximal silver nanoparticles

    International Nuclear Information System (INIS)

    Zhang, N.; Dai, D.J.; Fan, J.Y.

    2012-01-01

    Highlights: ► We studied metal surface plasmon-enhanced photoluminescence in SiC nanocrystals. ► The integrated emission intensity can be enhanced by 17 times. ► The coupling between SiC emission and Ag plasmon oscillation induces the enhancement. ► The enhancement is tunable with varied spacing thickness of electrolytes. - Abstract: Plasmon-enhanced photoluminescence has wide application potential in many areas, whereas the underlying mechanism is still in debate. We report the photoluminescence enhancement in SiC nanocrystal–Ag nanoparticle coupled system spaced by the poly(styrene sulfonic acid) sodium salt/poly(allylamine hydrochloride) polyelectrolyte bilayers. The integrated luminescence intensity can be improved by up to 17 times. Our analysis indicates that the strong coupling between the SiC nanocrystals and the surface plasmon oscillation of the silver nanoparticles is the major cause of the luminescence enhancement. These findings will help to understand the photoluminescence enhancement mechanism as well as widen the applications of the SiC nanocrystals in photonics and life sciences.

  3. Growth and relaxation processes in Ge nanocrystals on free-standing Si(001) nanopillars.

    Science.gov (United States)

    Kozlowski, G; Zaumseil, P; Schubert, M A; Yamamoto, Y; Bauer, J; Schülli, T U; Tillack, B; Schroeder, T

    2012-03-23

    We study the growth and relaxation processes of Ge crystals selectively grown by chemical vapour deposition on free-standing 90 nm wide Si(001) nanopillars. Epi-Ge with thickness ranging from 4 to 80 nm was characterized by synchrotron based x-ray diffraction and transmission electron microscopy. We found that the strain in Ge nanostructures is plastically released by nucleation of misfit dislocations, leading to degrees of relaxation ranging from 50 to 100%. The growth of Ge nanocrystals follows the equilibrium crystal shape terminated by low surface energy (001) and {113} facets. Although the volumes of Ge nanocrystals are homogeneous, their shape is not uniform and the crystal quality is limited by volume defects on {111} planes. This is not the case for the Ge/Si nanostructures subjected to thermal treatment. Here, improved structure quality together with high levels of uniformity of the size and shape is observed.

  4. ZnO nanocrystals on SiO2/Si surfaces thermally cleaned in ultrahigh vacuum and characterized using spectroscopic photoemission and low energy electron microscopy

    International Nuclear Information System (INIS)

    Ericsson, Leif K. E.; Magnusson, Kjell O.; Zakharov, Alexei A.

    2010-01-01

    Thermal cleaning in ultrahigh vacuum of ZnO nanocrystals distributed on SiO 2 /Si surfaces has been studied using spectroscopic photoemission and low energy electron microscopy (SPELEEM). This study thus concern weakly bound ZnO nanocrystals covering only 5%-10% of the substrate. Chemical properties, crystallinity, and distribution of nanocrystals are used to correlate images acquired with the different techniques showing excellent correspondence. The nanocrystals are shown to be clean enough after thermal cleaning at 650 deg. C to be imaged by LEEM and x-ray PEEM as well as chemically analyzed by site selective x-ray photoelectron spectroscopy (μ-XPS). μ-XPS shows a sharp Zn 3d peak and resolve differences in O 1s states in oxides. The strong LEEM reflections together with the obtained chemical information indicates that the ZnO nanocrystals were thermally cleaned, but do not indicate any decomposition of the nanocrystals. μ-XPS was also used to determine the thickness of SiO 2 on Si. This article is the first to our knowledge where the versatile technique SPELEEM has been used to characterize ZnO nanocrystals.

  5. Role of the interface region on the optoelectronic properties of silicon nanocrystals embedded in SiO2

    International Nuclear Information System (INIS)

    Daldosso, N.; Dalba, G.; Fornasini, P.; Grisenti, R.; Pavesi, L.; Luppi, M.; Magri, R.; Ossicini, S.; Degoli, E.; Rocca, F.; Boninelli, S.; Priolo, F.; Spinella, C.; Iacona, F.

    2003-01-01

    Light-emitting silicon nanocrystals embedded in SiO 2 have been investigated by x-ray absorption measurements in total electron and photoluminescence yields, by energy filtered transmission electron microscopy and by ab initio total energy calculations. Both experimental and theoretical results show that the interface between the silicon nanocrystals and the surrounding SiO 2 is not sharp: an intermediate region of amorphous nature and variable composition links the crystalline Si with the amorphous stoichiometric SiO 2 . This region plays an active role in the light-emission process

  6. Synthesis and characterization of ion-implanted Pt nanocrystals in SiO2

    International Nuclear Information System (INIS)

    Giulian, R.; Kluth, P.; Johannessen, B.; Araujo, L.L.; Llewellyn, D.J.; Cookson, D.J.; Ridgway, M.C.

    2007-01-01

    Pt nanocrystals (NCs) produced by ion implantation in SiO 2 films were investigated by Rutherford backscattering spectroscopy (RBS), transmission electron microscopy (TEM) and small angle X-ray scattering (SAXS). The implantations were performed at liquid nitrogen temperature using energies between 3.4 and 5.6 MeV and an ion fluence range of 2-30 x 10 16 cm -2 and were followed by annealing in forming gas (95% N 2 , 5% H 2 ) for one hour at temperatures between 500 and 1100 deg. C. TEM analysis revealed that the NCs are spherical in shape. The mean size of the NCs annealed at 1100 deg. C varied between 2.8 and 3.6 nm for the highest and lowest fluences, respectively, as determined with both TEM and SAXS. In contrast to previous studies on ion implanted metal NCs, larger Pt NCs are located far beyond the Pt peak concentration, potentially the result of a strongly defect mediated NC nucleation

  7. Influence of the crystallization process on the luminescence of multilayers of SiGe nanocrystals embedded in SiO2

    International Nuclear Information System (INIS)

    Avella, M.; Prieto, A.C.; Jimenez, J.; Rodriguez, A.; Sangrador, J.; Rodriguez, T.; Ortiz, M.I.; Ballesteros, C.

    2008-01-01

    Multilayers of SiGe nanocrystals embedded in an oxide matrix have been fabricated by low-pressure chemical vapor deposition of SiGe and SiO 2 onto Si wafers (in a single run at 390 deg. C and 50 mTorr, using GeH 4 , Si 2 H 6 and O 2 ) followed by a rapid thermal annealing treatment to crystallize the SiGe nanoparticles. The main emission band is located at 400 nm in both cathodoluminescence and photoluminescence experiments at 80 K and also at room temperature. The annealing conditions (temperatures ranging from 700 to 1000 deg. C and for times of 30 and 60 s) have been investigated in samples with different diameter of the nanoparticles (from ∼3 to ≥5 nm) and oxide interlayer thickness (15 and 35 nm) in order to establish a correlation between the crystallization of the nanoparticles, the degradation of their composition by Ge diffusion and the intensity of the luminescence emission band. Structures with small nanoparticles (3-4.5 nm) separated by thick oxide barriers (∼35 nm) annealed at 900 deg. C for 60 s yield the maximum intensity of the luminescence. An additional treatment at 450 deg. C in forming gas for dangling-bond passivation increases the intensity of the luminescence band by 25-30%

  8. Identification of nasopharyngeal carcinoma from photoluminescence spectra of 3C-SiC nanocrystals

    Science.gov (United States)

    Wang, Li-Fen; Guo, Jun-Hong; Huang, Zhi-Chun; Gu, Jian-Sen; Feng, Li-Ren; Liu, Li-Zhe

    2017-09-01

    The identification of intracellular pH (pHi) during carcinogenesis progression plays a crucial role in the studies of biochemistry, cytology, and clinical medicine. In this work, 3C-SiC nanocrystals (NCs), which can effectively monitor the pH environment by using the linear relation between photoluminescence intensity and surface OH- and H+ concentration, are adapted as fluorescent probes for monitoring carcinogenesis progression of nasopharyngeal carcinoma. Our results demonstrated that 3C-SiC NCs are compatible with living cells and have low cytotoxicity. The pHi measurements in different carcinogenesis environments indicate the validity and sensitivity of this technology in identifying nasopharyngeal carcinoma in application.

  9. Tailoring of SiC nanoprecipitates formed in Si

    Energy Technology Data Exchange (ETDEWEB)

    Velisa, G., E-mail: gihan.velisa@cea.fr [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Horia Hulubei National Institute for Physics and Nuclear Engineering, P.O. Box MG-6, 077125 Magurele (Romania); Trocellier, P. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Thomé, L. [Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR8609, Bât. 108, 91405 Orsay (France); Vaubaillon, S. [CEA, INSTN, UEPTN, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Miro, S.; Serruys, Y.; Bordas, É. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Meslin, E. [CEA, DEN, Service de Recherches de Métallurgie Physique, F-91191 Gif-sur-Yvette (France); Mylonas, S. [Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR8609, Bât. 108, 91405 Orsay (France); Coulon, P.E. [Ecole Polytechnique, Laboratoire des Solides Irradiés, CEA/DSM/IRAMIS-CNRS, 91128 Palaiseau Cedex (France); Leprêtre, F.; Pilz, A.; Beck, L. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France)

    2013-07-15

    The SiC synthesis through single-beam of C{sup +}, and simultaneous-dual-beam of C{sup +} and Si{sup +} ion implantations into a Si substrate heated at 550 °C has been studied by means of three complementary analytical techniques: nuclear reaction analysis (NRA), Raman, and transmission electron microscopy (TEM). It is shown that a broad distribution of SiC nanoprecipitates is directly formed after simultaneous-dual-beam (520-keV C{sup +} and 890-keV Si{sup +}) and single-beam (520-keV C{sup +}) ion implantations. Their shape appear as spherical (average size ∼4–5 nm) and they are in epitaxial relationship with the silicon matrix.

  10. Generating ordered Si nanocrystals via atomic force microscopy

    Czech Academy of Sciences Publication Activity Database

    Verveniotis, Elisseos; Šípek, Emil; Stuchlík, Jiří; Kočka, Jan; Rezek, Bohuslav

    2012-01-01

    Roč. 358, č. 17 (2012), 2118–2121 ISSN 0022-3093 R&D Projects: GA ČR GD202/09/H041; GA MŠk(CZ) LC06040; GA AV ČR KAN400100701; GA MŠk LC510 Institutional research plan: CEZ:AV0Z10100521 Keywords : AFM * CS-AFM * a-Si:H * electric crystallization * nickel Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.597, year: 2012

  11. Organization of silicon nanocrystals by localized electrochemical etching

    International Nuclear Information System (INIS)

    Ayari-Kanoun, Asma; Drouin, Dominique; Beauvais, Jacques; Lysenko, Vladimir; Nychyporuk, Tetyana; Souifi, Abdelkader

    2009-01-01

    An approach to form a monolayer of organized silicon nanocrystals on a monocrystalline Si wafer is reported. Ordered arrays of nanoholes in a silicon nitride layer were obtained by combining electron beam lithography and plasma etching. Then, a short electrochemical etching current pulse led to formation of a single Si nanocrystal per each nanohole. As a result, high quality silicon nanocrystal arrays were formed with well controlled and reproducible morphologies. In future, this approach can be used to fabricate single electron devices.

  12. Enhancing optical gains in Si nanocrystals via hydrogenation and cerium ion doping

    International Nuclear Information System (INIS)

    Wang, Dong-Chen; Li, Yan-Li; Song, Sheng-Chi; Guo, Wen-Ping; Lu, Ming; Chen, Jia-Rong

    2014-01-01

    We report optical gain enhancements in Si nanocrystals (Si-NCs) via hydrogenation and Ce 3+ ion doping. Variable stripe length technique was used to obtain gains. At 0.3 W/cm 2 pumping power density of pulsed laser, net gains were observed together with gain enhancements after hydrogenation and/or Ce 3+ ion doping; gains after loss corrections were between 89.52 and 341.95 cm −1 ; and the photoluminescence (PL) lifetime was found to decrease with the increasing gain enhancement. At 0.04 W/cm 2 power density, however, no net gain was found and the PL lifetime increased with the increasing PL enhancement. The results were discussed according to stimulated and spontaneous excitation and de-excitation mechanisms of Si-NCs.

  13. Effect of hydrogen ion beam treatment on Si nanocrystal/SiO_2 superlattice-based memory devices

    International Nuclear Information System (INIS)

    Fu, Sheng-Wen; Chen, Hui-Ju; Wu, Hsuan-Ta; Chuang, Bing-Ru; Shih, Chuan-Feng

    2016-01-01

    Graphical abstract: - Highlights: • Memory window and retention properties are improved employing HIBAS technique. • The O/Si ratio and radiative recombination are changed by HIBAS. • Memory properties are affected not only by Si NCs and O/Si ratio but also the RDCs. • The mechanism of hydrogen ion beam alters the memory properties is investigated. - Abstract: This study presents a novel route for synthesizing silicon-rich oxide (SRO)/SiO_2 superlattice-based memory devices with an improved memory window and retention properties. The SiO_2 and SRO superlattices are deposited by reactive sputtering. Specifically, the hydrogen ion beam is used to irradiate the SRO layer immediately after its deposition in the vacuum chamber. The use of the hydrogen ion beam was determined to increase oxygen content and the density of the Si nanocrystals. The memory window increased from 16 to 25.6 V, and the leakage current decreased significantly by two orders, to under ±20 V, for the hydrogen ion beam-prepared devices. This study investigates the mechanism into how hydrogen ion beam treatment alters SRO films and influences memory properties.

  14. Effect of rapid thermal annealing temperature on the dispersion of Si nanocrystals in SiO{sub 2} matrix

    Energy Technology Data Exchange (ETDEWEB)

    Saxena, Nupur, E-mail: n1saxena@gmail.com; Kumar, Pragati; Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India)

    2015-05-15

    Effect of rapid thermal annealing temperature on the dispersion of silicon nanocrystals (Si-NC’s) embedded in SiO{sub 2} matrix grown by atom beam sputtering (ABS) method is reported. The dispersion of Si NCs in SiO{sub 2} is an important issue to fabricate high efficiency devices based on Si-NC’s. The transmission electron microscopy studies reveal that the precipitation of excess silicon is almost uniform and the particles grow in almost uniform size upto 850 °C. The size distribution of the particles broadens and becomes bimodal as the temperature is increased to 950 °C. This suggests that by controlling the annealing temperature, the dispersion of Si-NC’s can be controlled. The results are supported by selected area diffraction (SAED) studies and micro photoluminescence (PL) spectroscopy. The discussion of effect of particle size distribution on PL spectrum is presented based on tight binding approximation (TBA) method using Gaussian and log-normal distribution of particles. The study suggests that the dispersion and consequently emission energy varies as a function of particle size distribution and that can be controlled by annealing parameters.

  15. Effect of rapid thermal annealing temperature on the dispersion of Si nanocrystals in SiO2 matrix

    International Nuclear Information System (INIS)

    Saxena, Nupur; Kumar, Pragati; Gupta, Vinay

    2015-01-01

    Effect of rapid thermal annealing temperature on the dispersion of silicon nanocrystals (Si-NC’s) embedded in SiO 2 matrix grown by atom beam sputtering (ABS) method is reported. The dispersion of Si NCs in SiO 2 is an important issue to fabricate high efficiency devices based on Si-NC’s. The transmission electron microscopy studies reveal that the precipitation of excess silicon is almost uniform and the particles grow in almost uniform size upto 850 °C. The size distribution of the particles broadens and becomes bimodal as the temperature is increased to 950 °C. This suggests that by controlling the annealing temperature, the dispersion of Si-NC’s can be controlled. The results are supported by selected area diffraction (SAED) studies and micro photoluminescence (PL) spectroscopy. The discussion of effect of particle size distribution on PL spectrum is presented based on tight binding approximation (TBA) method using Gaussian and log-normal distribution of particles. The study suggests that the dispersion and consequently emission energy varies as a function of particle size distribution and that can be controlled by annealing parameters

  16. Vertically aligned Si nanocrystals embedded in amorphous Si matrix prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD)

    Energy Technology Data Exchange (ETDEWEB)

    Nogay, G. [Department of Physics, Middle East Technical University (METU), Ankara 06800 (Turkey); Center of Solar Energy Research and Application (GÜNAM), Middle East Technical University (METU), Ankara 06800 (Turkey); Saleh, Z.M., E-mail: zaki.saleh@aauj.edu [Center of Solar Energy Research and Application (GÜNAM), Middle East Technical University (METU), Ankara 06800 (Turkey); Department of Physics, Arab American University–Jenin (AAUJ), Jenin, Palestine (Country Unknown); Özkol, E. [Center of Solar Energy Research and Application (GÜNAM), Middle East Technical University (METU), Ankara 06800 (Turkey); Department of Chemical Engineering, Middle East Technical University (METU), Ankara 06800 (Turkey); Turan, R. [Department of Physics, Middle East Technical University (METU), Ankara 06800 (Turkey); Center of Solar Energy Research and Application (GÜNAM), Middle East Technical University (METU), Ankara 06800 (Turkey)

    2015-06-15

    Highlights: • Inductively-coupled plasma is used for nanostructured silicon at room temperature. • Low temperature deposition allows device processing on various substrates. • Deposition pressure is the most effective parameter in controlling nanostructure. • Films consist of quantum dots in a-Si matrix and exhibit columnar vertical growth. • Films are porous to oxygen infusion along columnar grain boundaries. - Abstract: Vertically-aligned nanostructured silicon films are deposited at room temperature on p-type silicon wafers and glass substrates by inductively-coupled, plasma-enhanced chemical vapor deposition (ICPCVD). The nanocrystalline phase is achieved by reducing pressure and increasing RF power. The crystalline volume fraction (X{sub c}) and the size of the nanocrystals increase with decreasing pressure at constant power. Columnar growth of nc-Si:H films is observed by high resolution transmission electron microscopy (HRTEM) and scanning electron microscopy (SEM). The films exhibit cauliflower-like structures with high porosity that leads to slow but uniform oxidation after exposure to air at room temperature. Films deposited at low pressures exhibit photoluminescence (PL) signals that may be deconvoluted into three distinct Gaussian components: 760–810, 920–935, and 990–1000 nm attributable to the quantum confinement and interface defect states. Hydrogen dilution is manifested in significant enhancement of the PL, but it has little effect on the nanocrystal size and X{sub c}.

  17. Temporal correlation of blinking events in CdSe/ZnS and Si/SiO{sub 2} nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Bruhn, Benjamin, E-mail: b.bruhn@uva.nl [Materials and Nanophysics, KTH Royal Institute of Technology, 164 40 Kista (Sweden); Van der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, 1098 XH Amsterdam (Netherlands); Qejvanaj, Fatjon [Materials and Nanophysics, KTH Royal Institute of Technology, 164 40 Kista (Sweden); Gregorkiewicz, Tom [Van der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, 1098 XH Amsterdam (Netherlands); Linnros, Jan [Materials and Nanophysics, KTH Royal Institute of Technology, 164 40 Kista (Sweden)

    2014-11-15

    Well passivated single Si/SiO{sub 2} nanoparticles obey mono-exponential blinking statistics, whereas CdSe/ZnS quantum dots follow an apparent (truncated) power-law. Log-normal distributions are found to describe the interval length histograms at least as well as power-laws, while at the same time being more physically feasible and significantly easing the determination of the exponential cutoff in the ON-time distribution. The correlation of an ON- (OFF-)interval with its temporally displaced ON (OFF) neighbors, as well as that of intermixed intervals (ON with OFF and OFF with ON neighbors) has been studied. As expected from purely random processes, the correlation coefficients for events in silicon nanocrystals equal zero, whereas positive correlations between the pure and negative correlations between the mixed states in CdSe quantum dots hint at a switching process between two distinct blinking regimes that are slower than the blinking itself.

  18. Coupling between Ge-nanocrystals and defects in SiO2

    International Nuclear Information System (INIS)

    Skov Jensen, J.; Franzo, G.; Leervad Petersen, T.P.; Pereira, R.; Chevallier, J.; Christian Petersen, M.; Bech Nielsen, B.; Nylandsted Larsen, A.

    2006-01-01

    Room temperature photoluminescence (PL) at around 600 nm from magnetron-sputtered SiO 2 films co-doped with Ge is reported. The PL signal is observed in pure SiO 2 , however, its intensity increases significantly in the presence of Ge-nanocrystals (Ge-nc). The PL intensity has been optimized by varying the temperature of heat treatment, type of gas during heat treatment, concentration of Ge in the SiO 2 films, and gas pressure during deposition. Maximum intensity occurs when Ge-nc of around 3.5 nm are present in large concentration in SiO 2 layers deposited at fairly high gas pressure. Based on time resolved PL, and PL measurements after α-particle irradiation or H passivation, we attribute the origin of the PL to a defect in SiO 2 (probably an O deficiency) that is excited through an energy transfer from Ge-nc. There is no direct PL from the Ge-nc; however, there is a strong coupling between excitons created in the Ge-nc and the SiO 2 defect

  19. Structural, spectroscopic and cytotoxicity studies of TbF{sub 3}@CeF{sub 3} and TbF{sub 3}@CeF{sub 3}@SiO{sub 2} nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Grzyb, Tomasz; Runowski, Marcin [Adam Mickiewicz University, Department of Rare Earths, Faculty of Chemistry (Poland); Dabrowska, Krystyna [Polish Academy of Sciences, Bacteriophage Laboratory, Institute of Immunology and Experimental Therapy (Poland); Giersig, Michael; Lis, Stefan, E-mail: blis@amu.edu.pl [Adam Mickiewicz University, Department of Rare Earths, Faculty of Chemistry (Poland)

    2013-10-15

    Terbium fluoride nanocrystals, covered by a shell, composed of cerium fluoride were synthesized by a co-precipitation method. Their complex structure was formed spontaneously during the synthesis. The surface of these core/shell nanocrystals was additionally modified by silica. The properties of TbF{sub 3}@CeF{sub 3} and TbF{sub 3}@CeF{sub 3}@SiO{sub 2} nanocrystals, formed in this way, were investigated. Spectroscopic studies showed that the differences between these two groups of products resulted from the presence of the SiO{sub 2} shell. X-ray diffraction patterns confirmed the trigonal crystal structure of TbF{sub 3}@CeF{sub 3} nanocrystals. High resolution transmission electron microscopy in connection with energy-dispersive X-ray spectroscopy showed a complex structure of the formed nanocrystals. Crystallized as small discs, 'the products', with an average diameter around 10 nm, showed an increase in the concentration of Tb{sup 3+} ions from surface to the core of nanocrystals. In addition to photo-physical analyses, cytotoxicity studies were performed on HSkMEC (Human Skin Microvascular Endothelial Cells) and B16F0 mouse melanoma cancer cells. The cytotoxicity of the nanomaterials was neutral for the investigated cells with no toxic or antiproliferative effect in the cell cultures, either for normal or for cancer cells. This fact makes the obtained nanocrystals good candidates for biological applications and further modifications of the SiO{sub 2} shell.Graphical Abstract.

  20. Elucidation of the enhanced ferromagnetic origin in Mn-doped ZnO nanocrystals embedded into a SiO2 matrix

    International Nuclear Information System (INIS)

    Lee, Sejoon; Lee, Youngmin; Kim, Deukyoung

    2013-01-01

    The origin of the enhanced room temperature ferromagnetism in Mn-doped ZnO (ZnO:Mn) nanocrystals is investigated. ZnO:Mn nanocrystals, which were fabricated by using a laser irradiation method with a 248-nm KrF excimer laser, exhibited two-times increase in the spontaneous magnetization (∼0.4 emu/cm 3 at 300 K) compared to the ZnO:Mn thin film (∼0.2 emu/cm 3 at 300 K). The increased exchange integral of J 1 /k B = 51.6 K in ZnO:Mn nanocrystals, in comparison with the ZnO:Mn thin film (J 1 /k B = 46.9 K), is indicative of the enhanced ferromagnetic exchange interaction. This is attributed to the large number of acceptor defects in the SiO 2 -capped ZnO:Mn nanocrystals. Namely, the holes bound to the acceptor defects form microscopic bound-magnetic-polarons with Mn ions; hence, long-range ferromagnetic coupling is enhanced. The results suggest that ferromagnetism in ZnO-based dilute magnetic semiconductors can be controlled by modulating the density of native point defects, which can be chemically and thermodynamically modified during the material synthesis or preparation.

  1. Elucidation of the enhanced ferromagnetic origin in Mn-doped ZnO nanocrystals embedded into a SiO₂ matrix

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Sejoon; Lee, Youngmin; Kim, Deukyoung [Dongguk University, Seoul (Korea, Republic of)

    2013-01-01

    The origin of the enhanced room temperature ferromagnetism in Mn-doped ZnO (ZnO:Mn) nanocrystals is investigated. ZnO:Mn nanocrystals, which were fabricated by using a laser irradiation method with a 248-nm KrF excimer laser, exhibited two-times increase in the spontaneous magnetization (∼0.4 emu/cm³ at 300 K) compared to the ZnO:Mn thin film (∼0.2 emu/cm³ at 300 K). The increased exchange integral of J₁/k{sub B} = 51.6 K in ZnO:Mn nanocrystals, in comparison with the ZnO:Mn thin film (J₁/k{sub B} = 46.9 K), is indicative of the enhanced ferromagnetic exchange interaction. This is attributed to the large number of acceptor defects in the SiO₂-capped ZnO:Mn nanocrystals. Namely, the holes bound to the acceptor defects form microscopic bound-magnetic-polarons with Mn ions; hence, long-range ferromagnetic coupling is enhanced. The results suggest that ferromagnetism in ZnO-based dilute magnetic semiconductors can be controlled by modulating the density of native point defects, which can be chemically and thermodynamically modified during the material synthesis or preparation.

  2. Diffusion limited Cu and Au nanocrystal formation in thin film SiO2

    International Nuclear Information System (INIS)

    Johannessen, B.; Kluth, P.; Glover, C.J.; Foran, G.J.; Ridgway, M.C.

    2006-01-01

    Elemental Cu and Au nanocrystals (NCs) were produced by high-energy ion-implantations into amorphous silica (SiO 2 ) and subsequent thermal annealing. By a combination of X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM) we confirm both NC species to have the bulk face-centered cubic phase and estimate their average diameter. We concentrate on the investigation of the concentration and size-dependent coordination number (China) of these matrix embedded NCs utilising extended X-ray absorption fine structure (EXAFS) spectroscopy. The CN is found to be suppressed compared to that of a bulk standard. The CN in Au NCs is found to be lower than that of Cu NCs in agreement with smaller average Au NC sizes. We explain this difference by the difference in diffusivity for the two atomic species in SiO 2

  3. Optical and electrical properties of Si-nanocrystals ion beam synthesized in SiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Garrido, B. E-mail: blas@el.ub.es; Lopez, M.; Perez-Rodriguez, A.; Garcia, C.; Pellegrino, P.; Ferre, R.; Moreno, J.A.; Morante, J.R.; Bonafos, C.; Carrada, M.; Claverie, A.; Torre, J. de la; Souifi, A

    2004-02-01

    We review in this paper our recent results on the correlation between the structural and the optoelectronic properties of Si nano crystals (Si-nc) embedded in SiO{sub 2}. We describe as well the development of both materials and technology approaches that have allowed us to successfully produce efficient and reliable LEDs by using only CMOS processes. Si-nc were synthesised in SiO{sub 2} by ion implantation plus annealing and display average diameters from 2.5 to 6 nm, as measured by electron microscopy. By varying the annealing time in a large scale we have been able to track the nucleation, pure growth and Ostwald ripening stages of the nanocrystal population. The most efficient structures have Si-ncs with average size of 3 nm and densities of about 10{sup 19} cm{sup -3}. We have estimated band-gap energies, lifetimes (20-200 {mu}s) and absorption cross-sections (10{sup -15}-10{sup -16} cm{sup 2}) as a function of size and surface passivation. Based on these results, we propose a mechanism for exciton recombination based on the strong coupling of excitons with the heterointerfaces. From highly luminescent Si-nc, LEDs consisting of MOS capacitors were fabricated. Stable red electroluminescence has been obtained at room temperature and the I-V characteristics prove that the current is related to a pure tunnelling process. Fowler-Nordheim injection is not observed during light emission for electric fields below 5 MV/cm. Thus, hot carrier injection is avoided and efficient and reliable devices are obtained.

  4. Colloidal PbS nanocrystals integrated to Si-based photonics for applications at telecom wavelengths

    Science.gov (United States)

    Humer, M.; Guider, R.; Jantsch, W.; Fromherz, T.

    2013-05-01

    In the last decade, Si based photonics has made major advances in terms of design, fabrication, and device implementation. But due to Silicon's indirect bandgap, it still remains a challenge to create efficient Si-based light emitting devices. In order to overcome this problem, an approach is to develop hybrid systems integrating light-emitting materials into Si. A promising class of materials for this purpose is the class of semiconducting nanocrystal quantum dots (NCs) that are synthesized by colloidal chemistry. As their absorption and emission wavelength depends on the dot size, which can easily be controlled during synthesis, they are extremely attractive as building blocks for nanophotonic applications. For applications in telecom wavelength, Lead chalcogenide colloidal NCs are optimum materials due to their unique optical, electronic and nonlinear properties. In this work, we experimentally demonstrate the integration of PbS nanocrystals into Si-based photonic structures like slot waveguides and ring resonators as optically pumped emitters for room temperature applications. In order to create such hybrid structures, the NCs were dissolved into polymer resists and drop cast on top of the device. Upon optical pumping, intense photoluminescence emission from the resonating modes is recorded at the output of the waveguide with transmission quality factors up to 14000. The polymer host material was investigated with respect to its ability to stabilize the NC's photoluminescence emission against degradation under ambient conditions. The waveguide-ring coupling efficiency was also investigated as function of the NCs concentrations blended into the polymer matrix. The integration of colloidal quantum dots into Silicon photonic structures as demonstrated in this work is a very versatile technique and thus opens a large range of applications utilizing the linear and nonlinear optical properties of PbS NCs at telecom wavelengths.

  5. Nanocrystal Growth in Thermally Treated Fe75Ni2Si8B13C2 Amorphous Alloy

    Czech Academy of Sciences Publication Activity Database

    Minić, Dragica M.; Blagojević, V.; Minić, Dušan M.; David, Bohumil; Pizúrová, Naděžda; Žák, Tomáš

    43A, č. 9 (2012), s. 3062-3069 ISSN 1073-5623 R&D Projects: GA MŠk 1M0512 Institutional support: RVO:68081723 Keywords : Nanocrystal growth * Fe75Ni2Si8B13C2 * Amorphous alloy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.627, year: 2012

  6. Photoluminescence of CdTe nanocrystals grown by pulsed laser ablation on a template of Si nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Guillen-Cervantes, A.; Silva-Lopez, H.; Becerril-Silva, M.; Arias-Ceron, J.S.; Campos-Gonzalez, E.; Zelaya-Angel, O. [CINVESTAV-IPN, Physics Department, Apdo. Postal 14-740, Mexico (Mexico); Medina-Torres, A.C. [Escuela Superior de Fisica y Matematicas del IPN, Mexico (Mexico)

    2014-11-12

    CdTe nanocrystals were grown on eroded Si (111) substrates at room temperature by pulsed laser ablation. Before growth, Si substrates were subjected to different erosion time in order to investigate the effect on the CdTe samples. The erosion process consists of exposition to a pulsed high-voltage electric arc. The surface consequence of the erosion process consists of Si nanoparticles which acted as a template for the growth of CdTe nanocrystals. CdTe samples were studied by X-ray diffraction (XRD), room temperature photoluminescence (RT PL) and high-resolution transmission electron microscopy (HRTEM). CdTe nanocrystals grew in the stable cubic phase, according to XRD spectra. A strong visible emission was detected in photoluminescence (PL) experiments. The PL signal was centered at 540 nm (∝2.34 eV). With the effective mass approximation, the size of the CdTe crystals was estimated around 3.5 nm. HRTEM images corroborated the physical characteristics of CdTe nanocrystals. These results could be useful for the development of CdTe optoelectronic devices. (orig.)

  7. Effects of substrate temperature on structural and electrical properties of SiO2-matrix boron-doped silicon nanocrystal thin films

    International Nuclear Information System (INIS)

    Huang, Junjun; Zeng, Yuheng; Tan, Ruiqin; Wang, Weiyan; Yang, Ye; Dai, Ning; Song, Weijie

    2013-01-01

    In this work, silicon-rich SiO 2 (SRSO) thin films were deposited at different substrate temperatures (T s ) and then annealed by rapid thermal annealing to form SiO 2 -matrix boron-doped silicon-nanocrystals (Si-NCs). The effects of T s on the micro-structure and electrical properties of the SiO 2 -matrix boron-doped Si-NC thin films were investigated using Raman spectroscopy and Hall measurements. Results showed that the crystalline fraction and dark conductivity of the SiO 2 -matrix boron-doped Si-NC thin films both increased significantly when the T s was increased from room temperature to 373 K. When the T s was further increased from 373 K to 676 K, the crystalline fraction of 1373 K-annealed thin films decreased from 52.2% to 38.1%, and the dark conductivity reduced from 8 × 10 −3 S/cm to 5.5 × 10 −5 S/cm. The changes in micro-structure and dark conductivity of the SiO 2 -matrix boron-doped Si-NC thin films were most possibly due to the different amount of Si-O 4 bond in the as-deposited SRSO thin films. Our work indicated that there was an optimal T s , which could significantly increase the crystallization and conductivity of Si-NC thin films. Also, it was illumined that the low-resistivity SiO 2 -matrix boron-doped Si-NC thin films can be achieved under the optimal substrate temperatures, T s .

  8. Luminescent nanocrystals in the rare-earth niobate–zirconia system formed via hydrothermal method

    International Nuclear Information System (INIS)

    Hirano, Masanori; Dozono, Hayato

    2013-01-01

    Luminescent nanocrystals based on the rare-earth niobates (Ln 3 NbO 7 , Ln=Y, Eu) and zirconia (ZrO 2 ) that were composed of 50 mol% Ln 3 NbO 7 and 50 mol% ZrO 2 , were hydrothermally formed as cubic phase under weakly basic conditions at 240 °C. The lattice parameter of the as-prepared nanoparticles corresponding to the composition of Y 3−x Eu x NbO 7 –4ZrO 2 that was estimated as a single phase of cubic gradually increased as the content of europium x increased. The existence of small absorbance peaks at 395 and 466 nm corresponding to the Eu 3+7 F 0 → 5 L 6 , and 7 F 0 → 5 D 2 excitation transition, respectively, was clearly observed in the diffuse reflectance spectra of the as-prepared samples containing europium. The optical band gap of the as-prepared samples was in the range from 3.5 to 3.7 eV. The photoluminescence spectra of the as-prepared nanocrystals containing europium showed orange and red luminescences with main peaks at 590 and 610 nm, corresponding to 5 D 0 → 7 F 1 and 5 D 0 → 7 F 2 transitions of Eu 3+ , respectively, under excitation at 395 nm Xe lamp. The emission intensity corresponding to 5 D 0 → 7 F 2 transition increased as heat-treatment temperature rose from 800 to 1200 °C. - Graphical abstract: This graphical abstract shows the excitation and emission spectra and a transmission electron microscopy image of nanocrystals (with composition based on the rare-earth niobates (Ln 3 NbO 7 , Ln=Y, Eu) and zirconia (ZrO 2 ) that were composed of 50 mol% Ln 3 NbO 7 and 50 mol% ZrO 2 ) formed via hydrothermal route. Display Omitted - Highlights: • Nanocrystals composed of 50 mol% Y 3−x Eu x NbO 7 and 50 mol% ZrO 2 was directly formed. • The nanocrystals were hydrothermally formed under weakly basic conditions at 240 °C. • The Y 3 NbO 7 showed an UV-blue and broad-band emission under excitation at 240 nm. • The emission is originated from the niobate octahedral group [NbO 6 ] 7− . • The nanocrystals showed orange and

  9. Ion-beam synthesis and photoluminescence of SiC nanocrystals assisted by MeV-heavy-ion-beam annealing

    International Nuclear Information System (INIS)

    Khamsuwan, J.; Intarasiri, S.; Kirkby, K.; Chu, P.K.; Singkarat, S.; Yu, L.D.

    2012-01-01

    This work explored a novel way to synthesize silicon carbide (SiC) nanocrystals for photoluminescence. Carbon ions at 90 keV were implanted in single crystalline silicon wafers at elevated temperature, followed by irradiation using xenon ion beams at an energy of 4 MeV with two low fluences of 5 × 10 13 and 1 × 10 14 ions/cm 2 at elevated temperatures for annealing. X-ray diffraction, Raman scattering, infrared spectroscopy and transmission electron microscopy were used to characterize the formation of nanocrystalline SiC. Photoluminescence was measured from the samples. The results demonstrated that MeV-heavy-ion-beam annealing could indeed induce crystallization of SiC nanocrystals and enhance emission of photoluminescence with violet bands dominance due to the quantum confinement effect.

  10. Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices

    Science.gov (United States)

    Yu, Jie; Chen, Kun-ji; Ma, Zhong-yuan; Zhang, Xin-xin; Jiang, Xiao-fan; Wu, Yang-qing; Huang, Xin-fan; Oda, Shunri

    2016-09-01

    Based on the charge storage mode, it is important to investigate the scaling dependence of memory performance in silicon nanocrystal (Si-NC) nonvolatile memory (NVM) devices for its scaling down limit. In this work, we made eight kinds of test key cells with different gate widths and lengths by 0.13-μm node complementary metal oxide semiconductor (CMOS) technology. It is found that the memory windows of eight kinds of test key cells are almost the same of about 1.64 V @ ± 7 V/1 ms, which are independent of the gate area, but mainly determined by the average size (12 nm) and areal density (1.8 × 1011/cm2) of Si-NCs. The program/erase (P/E) speed characteristics are almost independent of gate widths and lengths. However, the erase speed is faster than the program speed of test key cells, which is due to the different charging behaviors between electrons and holes during the operation processes. Furthermore, the data retention characteristic is also independent of the gate area. Our findings are useful for further scaling down of Si-NC NVM devices to improve the performance and on-chip integration. Project supported by the State Key Development Program for Basic Research of China (Grant No. 2010CB934402) and the National Natural Science Foundation of China (Grant Nos. 11374153, 61571221, and 61071008).

  11. Strong white and blue photoluminescence from silicon nanocrystals in SiNx grown by remote PECVD using SiCl4/NH3

    International Nuclear Information System (INIS)

    Benami, A; Santana, G; Ortiz, A; Ponce, A; Romeu, D; Aguilar-Hernandez, J; Contreras-Puente, G; Alonso, J C

    2007-01-01

    Strong white and blue photoluminescence (PL) from as-grown silicon nanocrystals (nc-Si) in SiN x films prepared by remote plasma enhanced chemical vapour deposition using SiCl 4 /NH 3 mixtures is reported. The colour and intensity of the PL could be controlled by adjusting the NH 3 flow rate. Samples with white emission were annealed at 1000 deg. C, obtaining a strong improvement of the PL intensity with a blue colour. The PL can be attributed to quantum confinement effect in nc-Si embedded in SiN x matrix, which is improved when a better passivation of nc-Si surface with chlorine and nitrogen atoms is obtained. The size, density and structure of the nc-Si in the as-grown and annealed films were confirmed and measured by high-resolution transmission electron microscopy

  12. Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing

    Energy Technology Data Exchange (ETDEWEB)

    Krivyakin, G. K.; Volodin, V. A., E-mail: volodin@isp.nsc.ru; Kochubei, S. A.; Kamaev, G. N. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Purkrt, A.; Remes, Z. [Institute of Physics ASCR (Czech Republic); Fajgar, R. [Institute of Chemical Process Fundamentals of the ASCR (Czech Republic); Stuchliková, T. H.; Stuchlik, J. [Institute of Physics ASCR (Czech Republic)

    2016-07-15

    Silicon nanocrystals are formed in the i layers of p–i–n structures based on a-Si:H using pulsed laser annealing. An excimer XeCl laser with a wavelength of 308 nm and a pulse duration of 15 ns is used. The laser fluence is varied from 100 (below the melting threshold) to 250 mJ/cm{sup 2} (above the threshold). The nanocrystal sizes are estimated by analyzing Raman spectra using the phonon confinement model. The average is from 2.5 to 3.5 nm, depending on the laser-annealing parameters. Current–voltage measurements show that the fabricated p–i–n structures possess diode characteristics. An electroluminescence signal in the infrared (IR) range is detected for the p–i–n structures with Si nanocrystals; the peak position (0.9–1 eV) varies with the laser-annealing parameters. Radiative transitions are presumably related to the nanocrystal–amorphous-matrix interface states. The proposed approach can be used to produce light-emitting diodes on non-refractory substrates.

  13. Controlled fabrication of Si nanocrystal delta-layers in thin SiO{sub 2} layers by plasma immersion ion implantation for nonvolatile memories

    Energy Technology Data Exchange (ETDEWEB)

    Bonafos, C.; Ben-Assayag, G.; Groenen, J.; Carrada, M. [CEMES-CNRS and Université de Toulouse, 29 rue J. Marvig, 31055 Toulouse Cedex 04 (France); Spiegel, Y.; Torregrosa, F. [IBS, Rue G Imbert Prolongée, ZI Peynier-Rousset, 13790 Peynier (France); Normand, P.; Dimitrakis, P.; Kapetanakis, E. [NCSRD, Terma Patriarchou Gregoriou, 15310 Aghia Paraskevi (Greece); Sahu, B. S.; Slaoui, A. [ICube, 23 Rue du Loess, 67037 Strasbourg Cedex 2 (France)

    2013-12-16

    Plasma Immersion Ion Implantation (PIII) is a promising alternative to beam line implantation to produce a single layer of nanocrystals (NCs) in the gate insulator of metal-oxide semiconductor devices. We report herein the fabrication of two-dimensional Si-NCs arrays in thin SiO{sub 2} films using PIII and rapid thermal annealing. The effect of plasma and implantation conditions on the structural properties of the NC layers is examined by transmission electron microscopy. A fine tuning of the NCs characteristics is possible by optimizing the oxide thickness, implantation energy, and dose. Electrical characterization revealed that the PIII-produced-Si NC structures are appealing for nonvolatile memories.

  14. Controlled fabrication of Si nanocrystal delta-layers in thin SiO2 layers by plasma immersion ion implantation for nonvolatile memories

    International Nuclear Information System (INIS)

    Bonafos, C.; Ben-Assayag, G.; Groenen, J.; Carrada, M.; Spiegel, Y.; Torregrosa, F.; Normand, P.; Dimitrakis, P.; Kapetanakis, E.; Sahu, B. S.; Slaoui, A.

    2013-01-01

    Plasma Immersion Ion Implantation (PIII) is a promising alternative to beam line implantation to produce a single layer of nanocrystals (NCs) in the gate insulator of metal-oxide semiconductor devices. We report herein the fabrication of two-dimensional Si-NCs arrays in thin SiO 2 films using PIII and rapid thermal annealing. The effect of plasma and implantation conditions on the structural properties of the NC layers is examined by transmission electron microscopy. A fine tuning of the NCs characteristics is possible by optimizing the oxide thickness, implantation energy, and dose. Electrical characterization revealed that the PIII-produced-Si NC structures are appealing for nonvolatile memories

  15. Probing the formation of silicon nano-crystals (Si-ncs) using variable energy positron annihilation spectroscopy

    Science.gov (United States)

    Knights, A. P.; Bradley, J. D. B.; Hulko, O.; Stevanovic, D. V.; Edwards, C. J.; Kallis, A.; Coleman, P. G.; Crowe, I. F.; Halsall, M. P.; Gwilliam, R. M.

    2011-01-01

    We describe preliminary results from studies of the formation of silicon nano-crystals (Si-ncs) embedded in stoichiometric, thermally grown SiO2 using Variable Energy Positron Annihilation Spectroscopy (VEPAS). We show that the VEPAS technique is able to monitor the introduction of structural damage. In SiO2 through the high dose Si+ ion implantation required to introduce excess silicon as a precursor to Si-nc formation. VEPAS is also able to characterize the rate of the removal of this damage with high temperature annealing, showing strong correlation with photoluminescence. Finally, VEPAS is shown to be able to selectively probe the interface between Si-ncs and the host oxide. Introduction of hydrogen at these interfaces suppresses the trapping of positrons at the interfaces.

  16. Shrinking of silicon nanocrystals embedded in an amorphous silicon oxide matrix during rapid thermal annealing in a forming gas atmosphere

    Science.gov (United States)

    van Sebille, M.; Fusi, A.; Xie, L.; Ali, H.; van Swaaij, R. A. C. M. M.; Leifer, K.; Zeman, M.

    2016-09-01

    We report the effect of hydrogen on the crystallization process of silicon nanocrystals embedded in a silicon oxide matrix. We show that hydrogen gas during annealing leads to a lower sub-band gap absorption, indicating passivation of defects created during annealing. Samples annealed in pure nitrogen show expected trends according to crystallization theory. Samples annealed in forming gas, however, deviate from this trend. Their crystallinity decreases for increased annealing time. Furthermore, we observe a decrease in the mean nanocrystal size and the size distribution broadens, indicating that hydrogen causes a size reduction of the silicon nanocrystals.

  17. Atomistic simulation of the thermal conductivity in amorphous SiO2 matrix/Ge nanocrystal composites

    Science.gov (United States)

    Kuryliuk, Vasyl V.; Korotchenkov, Oleg A.

    2017-04-01

    We use nonequilibrium molecular dynamics computer simulations with the Tersoff potential aiming to provide a comprehensive picture of the thermal conductivity of amorphous SiO2 (a-SiO2) matrix with embedded Ge nanocrystals (nc-Ge). The modelling predicts the a-SiO2 matrix thermal conductivity in a temperature range of 50 fair agreement with experiment at around room temperature. It is worth noticing that the predicted room-temperature thermal conductivity in a-SiO2 is in very good agreement with the experimental result, which is in marked contrast with the thermal conductivity calculated employing the widely used van Beest-Kramer-van Santen (BKS) potential. We show that the thermal conductivity of composite nc-Ge/a-SiO2 systems decreases steadily with increasing the volume fraction of Ge inclusions, indicative of enhanced interface scattering of phonons imposed by embedded Ge nanocrystals. We also observe that increasing the volume fractions above a certain threshold value results in a progressively increased thermal conductivity of the nanocomposite, which can be explained by increasing volume fraction of a better thermally conducting Ge. Finally, non-equilibrium molecular dynamics simulations with the Tersoff potential are promising for computing the thermal conductivity of nanocomposites based on amorphous SiO2 and can be readily scaled to more complex composite structures with embedded nanoparticles, which thus help design nanocomposites with desired thermal properties.

  18. Forming of nanocrystal silicon films by implantation of high dose of H+ in layers of silicon on isolator and following fast thermal annealing

    International Nuclear Information System (INIS)

    Tyschenko, I.E.; Popov, V.P.; Talochkin, A.B.; Gutakovskij, A.K.; Zhuravlev, K.S.

    2004-01-01

    Formation of nanocrystalline silicon films during rapid thermal annealing of the high-dose H + ion implanted silicon-on-insulator structures was studied. It was found, that Si nanocrystals had formed alter annealings at 300-400 deg C, their formation being strongly limited by the hydrogen content in silicon and also by the annealing time. It was supposed that the nucleation of crystalline phase occurred inside the silicon islands between micropores. It is conditioned by ordering Si-Si bonds as hydrogen atoms are leaving their sites in silicon network. No coalescence of micropores takes place during the rapid thermal annealing at the temperatures up to ∼ 900 deg C. Green-orange photoluminescence was observed on synthesized films at room temperature [ru

  19. Spectroscopic investigations of dark Si nanocrystals in SiO2 and their role in external quantum efficiency quenching"

    NARCIS (Netherlands)

    Limpens, R.; Gregorkiewicz, T.

    2013-01-01

    The percentage of dark silicon nanocrystals, i.e., the nanocrystals that are not able to radiatively recombine after absorption of a photon, is investigated by combining measurements of external and internal quantum efficiencies. The study is conducted on samples prepared by co-sputtering and

  20. Impact of growth temperature on the crystal habits, forms and structures of VO2 nanocrystals

    International Nuclear Information System (INIS)

    Loeffler, Stefan; Auer, Erwin; Lugstein, Alois; Bertagnolli, Emmerich; Weil, Matthias

    2011-01-01

    We investigated the impact of the process temperature on the habits, forms and crystal structure of VO 2 nanocrystals grown by a vapor-transport method on (0001) quartz substrates. Four distinct growth regimes were discerned: orthorhombic nanowires, sheets, hemispheres, and nanowires with a monoclinic structure. The nanostructures were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), and transmission electron microscopy (TEM). I/V characterization of individual nanowires was enabled by Ti/Au contact formation via electron beam lithography and lift-off techniques. The expected metal-insulator transition (MIT) was found in monoclinic VO 2 nanowires. (orig.)

  1. Assembly of Ge nanocrystals on SiO2 via a stress-induced dewetting process

    International Nuclear Information System (INIS)

    Sutter, E; Sutter, P

    2006-01-01

    We use epitaxial Ge islands on silicon-on-insulator (001) to initiate and drive the dewetting of the ultrathin ( 2 layer and transforms the Ge islands into oxide-supported, electrically isolated, Ge-rich nanocrystals. We investigate the process of dewetting and demonstrate that it can be used for the controlled assembly of nanocrystals-from isolated single ones to dense arrays

  2. Changes of the absorption cross section of Si nanocrystals with temperature and distance

    Czech Academy of Sciences Publication Activity Database

    Greben, M.; Khoroshyy, Petro; Gutsch, S.; Hiller, D.; Zacharias, M.; Valenta, J.

    2017-01-01

    Roč. 8, Nov 6 (2017), s. 2315-2323 ISSN 2190-4286 Institutional support: RVO:61388963 Keywords : absorption cross section * average lifetime * nanocrystal distance * photoluminescence decay * silicon nanocrystals Subject RIV: CF - Physical ; Theoretical Chemistry OBOR OECD: Physical chemistry Impact factor: 3.127, year: 2016 https://www.beilstein-journals.org/bjnano/articles/8/231

  3. Indomethacin nanocrystals prepared by different laboratory scale methods: effect on crystalline form and dissolution behavior

    Energy Technology Data Exchange (ETDEWEB)

    Martena, Valentina; Censi, Roberta [University of Camerino, School of Pharmacy (Italy); Hoti, Ela; Malaj, Ledjan [University of Tirana, Department of Pharmacy (Albania); Di Martino, Piera, E-mail: piera.dimartino@unicam.it [University of Camerino, School of Pharmacy (Italy)

    2012-12-15

    The objective of this study is to select very simple and well-known laboratory scale methods able to reduce particle size of indomethacin until the nanometric scale. The effect on the crystalline form and the dissolution behavior of the different samples was deliberately evaluated in absence of any surfactants as stabilizers. Nanocrystals of indomethacin (native crystals are in the {gamma} form) (IDM) were obtained by three laboratory scale methods: A (Batch A: crystallization by solvent evaporation in a nano-spray dryer), B (Batch B-15 and B-30: wet milling and lyophilization), and C (Batch C-20-N and C-40-N: Cryo-milling in the presence of liquid nitrogen). Nanocrystals obtained by the method A (Batch A) crystallized into a mixture of {alpha} and {gamma} polymorphic forms. IDM obtained by the two other methods remained in the {gamma} form and a different attitude to the crystallinity decrease were observed, with a more considerable decrease in crystalline degree for IDM milled for 40 min in the presence of liquid nitrogen. The intrinsic dissolution rate (IDR) revealed a higher dissolution rate for Batches A and C-40-N, due to the higher IDR of {alpha} form than {gamma} form for the Batch A, and the lower crystallinity degree for both the Batches A and C-40-N. These factors, as well as the decrease in particle size, influenced the IDM dissolution rate from the particle samples. Modifications in the solid physical state that may occur using different particle size reduction treatments have to be taken into consideration during the scale up and industrial development of new solid dosage forms.

  4. Growth Mechanism and Surface Structure of Ge Nanocrystals Prepared by Thermal Annealing of Cosputtered GeSiO Ternary Precursor

    Directory of Open Access Journals (Sweden)

    Bo Zhang

    2014-01-01

    Full Text Available Ge nanocrystals (Ge-ncs embedded in a SiO2 superlattice structure were prepared by magnetron cosputtering and postdeposition annealing. The formation of spherical nanocrystals was confirmed by transmission electron microscopy and their growth process was studied by a combination of spectroscopic techniques. The crystallinity volume fraction of Ge component was found to increase with crystallite size, but its overall low values indicated a coexistence of crystalline and noncrystalline phases. A reduction of Ge-O species was observed in the superlattice during thermal annealing, accompanied by a transition from oxygen-deficient silicon oxide to silicon dioxide. A growth mechanism involving phase separation of Ge suboxides (GeOx was then proposed to explain these findings and supplement the existing growth models for Ge-ncs in SiO2 films. Further analysis of the bonding structure of Ge atoms suggested that Ge-ncs are likely to have a core-shell structure with an amorphous-like surface layer, which is composed of GeSiO ternary complex. The surface layer thickness was extracted to be a few angstroms and equivalent to several atomic layer thicknesses.

  5. Annealing temperature and environment effects on ZnO nanocrystals embedded in SiO2: a photoluminescence and TEM study.

    Science.gov (United States)

    Pita, Kantisara; Baudin, Pierre; Vu, Quang Vinh; Aad, Roy; Couteau, Christophe; Lérondel, Gilles

    2013-12-06

    We report on efficient ZnO nanocrystal (ZnO-NC) emission in the near-UV region. We show that luminescence from ZnO nanocrystals embedded in a SiO2 matrix can vary significantly as a function of the annealing temperature from 450°C to 700°C. We manage to correlate the emission of the ZnO nanocrystals embedded in SiO2 thin films with transmission electron microscopy images in order to optimize the fabrication process. Emission can be explained using two main contributions, near-band-edge emission (UV range) and defect-related emissions (visible). Both contributions over 500°C are found to be size dependent in intensity due to a decrease of the absorption cross section. For the smallest-size nanocrystals, UV emission can only be accounted for using a blueshifted UV contribution as compared to the ZnO band gap. In order to further optimize the emission properties, we have studied different annealing atmospheres under oxygen and under argon gas. We conclude that a softer annealing temperature at 450°C but with longer annealing time under oxygen is the most preferable scenario in order to improve near-UV emission of the ZnO nanocrystals embedded in an SiO2 matrix.

  6. Glass-ceramic optical fiber containing Ba2TiSi2O8 nanocrystals for frequency conversion of lasers.

    Science.gov (United States)

    Fang, Zaijin; Xiao, Xusheng; Wang, Xin; Ma, Zhijun; Lewis, Elfed; Farrell, Gerald; Wang, Pengfei; Ren, Jing; Guo, Haitao; Qiu, Jianrong

    2017-03-30

    A glass-ceramic optical fiber containing Ba 2 TiSi 2 O 8 nanocrystals fabricated using a novel combination of the melt-in-tube method and successive heat treatment is reported for the first time. For the melt-in-tube method, fibers act as a precursor at the drawing temperature for which the cladding glass is softened while the core glass is melted. It is demonstrated experimentally that following heat treatment, Ba 2 TiSi 2 O 8 nanocrystals with diameters below 10 nm are evenly distributed throughout the fiber core. Comparing to the conventional rod-in-tube method, the melt-in-tube method is superior in terms of controllability of crystallization to allow for the fabrication of low loss glass-ceramic fibers. When irradiated using a 1030 nm femtosecond laser, an enhanced green emission at a wavelength of 515 nm is observed in the glass-ceramic fiber, which demonstrates second harmonic generation of a laser action in the fabricated glass-ceramic fibers. Therefore, this new glass-ceramic fiber not only provides a highly promising development for frequency conversion of lasers in all optical fiber based networks, but the melt-in-tube fabrication method also offers excellent opportunities for fabricating a wide range of novel glass-ceramic optical fibers for multiple future applications including fiber telecommunications and lasers.

  7. Enhanced photovoltaic performance of ultrathin Si solar cells via semiconductor nanocrystal sensitization: energy transfer vs. optical coupling effects.

    Science.gov (United States)

    Hoang, Son; Ashraf, Ahsan; Eisaman, Matthew D; Nykypanchuk, Dmytro; Nam, Chang-Yong

    2016-03-21

    Excitonic energy transfer (ET) offers exciting opportunities for advances in optoelectronic devices such as solar cells. While recent experimental attempts have demonstrated its potential in both organic and inorganic photovoltaics (PVs), what remains to be addressed is quantitative understanding of how different ET modes contribute to PV performance and how ET contribution is differentiated from the classical optical coupling (OC) effects. In this study, we implement an ET scheme using a PV device platform, comprising CdSe/ZnS nanocrystal energy donor and 500 nm-thick ultrathin Si acceptor layers, and present the quantitative mechanistic description of how different ET modes, distinguished from the OC effects, increase the light absorption and PV efficiency. We find that nanocrystal sensitization enhances the short circuit current of ultrathin Si solar cells by up to 35%, of which the efficient ET, primarily driven by a long-range radiative mode, contributes to 38% of the total current enhancement. These results not only confirm the positive impact of ET but also provide a guideline for rationally combining the ET and OC effects for improved light harvesting in PV and other optoelectronic devices.

  8. Nanocrystal in Er3+-doped SiO2-ZrO2 Planar Waveguide with Yb3+ Sensitizer

    International Nuclear Information System (INIS)

    Razaki, N. Iznie; Jais, U. Sarah; Abd-Rahman, M. Kamil; Bhaktha, S. N. B.; Chiasera, A.; Ferrari, M.

    2010-01-01

    Higher doping of Er 3+ in glass ceramic waveguides would cause concentration and pair-induced quenching which lead to inhomogeneous line-width of luminescence spectrum thus reduce output intensity. Concentration quenching can be overcome by introducing ZrO 2 in the glass matrix while co-doping with Yb 3+ which acts as sensitizer would improve the excitation efficiency of Er 3+ . In this study, SiO 2 -ZrO 2 planar waveguides having composition in mol percent of 70SiO 2 -30ZrO 2 doped with Er 3+ and co-doped with Yb 3+ , were prepared via sol-gel route. Narrower and shaper peaks of PL and XRD shows the formation of nanocrystals. Intensity is increase with addition amount of Yb 3+ shows sensitizing effect on Er 3+ .

  9. Memory characteristics and tunneling mechanism of Ag nanocrystal embedded HfAlOx films on Si83Ge17/Si substrate

    International Nuclear Information System (INIS)

    Qiu, X.Y.; Zhou, G.D.; Li, J.; Chen, Y.; Wang, X.H.; Dai, J.Y.

    2014-01-01

    A nano-floating gate memory capacitor consisting of a stack of 3 nm-thick HfAlO x tunneling layer, self-organized Ag nanocrystals (NCs), and a 6 nm-thick HfAlO x control layer, has been fabricated on compressively strained p-type Si 83 Ge 17 /Si(100) substrates by radio-frequency magnetron sputtering. The Ag-NCs with a size of 5–8 nm and a density of 5.7 × 10 12 /cm 2 are well dispersed in the amorphous HfAlO x matrix. Counterclockwise hysteresis capacitance–voltage curve with a memory window of ∼ 2 V, corresponding to a charge storage density of about 1.3 × 10 13 electrons/cm 2 , is observed in this memory capacitor. The accumulation capacitance of this memory capacitor has no obvious decrease during electrical stressing process within a period of 10 4 s, but the memory window gradually becomes narrower, and only 54% stored charges are retained in the Ag-NCs after 10 5 s stressing. Defect-enhanced Poole–Frenkel tunneling is found to be responsible for the degradation of memory properties. - Highlights: • Dispersed Ag nanocrystals act as memory nodes. • Realize a 2 V memory window • Illustrate the memory degradation process • Identify a defect-enhanced tunneling mechanism

  10. A room-temperature-operated Si LED with β-FeSi2 nanocrystals in the active layer: μW emission power at 1.5 μm

    Science.gov (United States)

    Shevlyagin, A. V.; Goroshko, D. L.; Chusovitin, E. A.; Balagan, S. A.; Dotsenko, S. A.; Galkin, K. N.; Galkin, N. G.; Shamirzaev, T. S.; Gutakovskii, A. K.; Latyshev, A. V.; Iinuma, M.; Terai, Y.

    2017-03-01

    This article describes the development of an Si-based light-emitting diode with β-FeSi2 nanocrystals embedded in the active layer. Favorable epitaxial conditions allow us to obtain a direct band gap type-I band alignment Si/β-FeSi2 nanocrystals/Si heterostructure with optical transition at a wavelength range of 1500-1550 nm at room temperature. Transmission electron microscopy data reveal strained, defect-free β-FeSi2 nanocrystals of diameter 6 and 25 nm embedded in the Si matrix. Intense electroluminescence was observed at a pumping current density as low as 0.7 A/cm2. The device reached an optical emission power of up to 25 μW at 9 A/cm2 with an external quantum efficiency of 0.009%. Watt-Ampere characteristic linearity suggests that the optical power margin of the light-emitting diode has not been exhausted. Band structure calculations explain the luminescence as being mainly due to radiative recombination in the large β-FeSi2 nanocrystals resulting from the realization of an indirect-to-direct band gap electronic configuration transformation arising from a favorable deformation of nanocrystals. The direct band gap structure and the measured short decay time of the luminescence of several tens of ns give rise to a fast operation speed for the device. Thus a method for developing a silicon-based photonic integrated circuit, combining complementary metal-oxide-semiconductor technology functionality and near-infrared light emission, is reported here.

  11. Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO2 for non-volatile memory device

    International Nuclear Information System (INIS)

    Stepina, N.P.; Dvurechenskii, A.V.; Armbrister, V.A.; Kirienko, V.V.; Novikov, P.L.; Kesler, V.G.; Gutakovskii, A.K.; Smagina, Z.V.; Spesivtzev, E.V.

    2008-01-01

    A floating gate memory structure, utilizing Ge nanocrystals (NCs) deposited on tunnel SiO 2 , have been fabricated using pulsed low energy ion-beam induced molecular-beam deposition (MBD) in ultra-high vacuum. The ion-beam action is shown to stimulate the nucleation of Ge NCs when being applied after thin Ge layer deposition. Growth conditions for independent change of NCs size and array density were established allowing to optimize the structure parameters required for memory device. Activation energy E = 0.25 eV was determined from the temperature dependence of NCs array density. Monte Carlo simulation has shown that the process, determining NCs array density, is the surface diffusion. Embedding of the crystalline Ge dots into silicon oxide was carried out by selective oxidation of Si(100)/SiO 2 /Ge(NCs)/poly-Si structure. MOS-capacitor obtained after oxidation showed a hysteresis in its C-V curves attributed to charge retention in the Ge dots

  12. Thermal decomposition of silane to form hydrogenated amorphous Si

    Science.gov (United States)

    Strongin, M.; Ghosh, A.K.; Wiesmann, H.J.; Rock, E.B.; Lutz, H.A. III

    Hydrogenated amorphous silicon is produced by thermally decomposing silane (SiH/sub 4/) or other gases comprising H and Si, at elevated temperatures of about 1700 to 2300/sup 0/C, in a vacuum of about 10/sup -8/ to 10/sup -4/ torr. A gaseous mixture is formed of atomic hydrogen and atomic silicon. The gaseous mixture is deposited onto a substrate to form hydrogenated amorphous silicon.

  13. Modification of cellulose nanocrystal via SI-ATRP of styrene and the mechanism of its reinforcement of polymethylmethacrylate.

    Science.gov (United States)

    Yin, Y; Tian, X; Jiang, X; Wang, H; Gao, W

    2016-05-20

    Cellulose nanocrystal (CNC) is a promising strengthener but is used limitedly since its poor compatibility with organic materials. The graft polymerization of styrene via surface-initiated atom transfer radical polymerization (SI-ATRP) of cellulose nanocrystal is adopted to modify its thermo-stability and compatibility. The modified crystals have been dosed into polymethylmethacrylate (PMMA) nanocomposites by the solution casting. The polymeric layer on the surface of CNCs should improve the thermal stability of CNCs, and provide significant dispersibility and compatibilization for the nanocomposites. Thermogravimetry analysis proved that the initial degrade temperature of CNC was increased 50 °C with the modification. The scanning electronic microscope showed that the modified CNCs homogeneously dispersed in PMMA matrix. Breaking strength and elongation at break of the composites were improved, which was attributed to the reinforcement of CNCs modified with styrene. Transmittance of nanocomposite films measurement showed that the transmittance of PMMA/1%CNC was almost close to that of pure PMMA. Copyright © 2016 Elsevier Ltd. All rights reserved.

  14. Optical luminescence from alkyl-passivated Si nanocrystals under vacuum ultraviolet excitation: Origin and temperature dependence of the blue and orange emissions

    OpenAIRE

    Chao, Y; Houlton, A; Horrocks, BR; Hunt, MRC; Poolton, NRJ; Yang, J; Šiller, L

    2006-01-01

    The origin and stability of luminescence are critical issues for Si nanocrystals which are intended for use as biological probes. The optical luminescence of alkyl-monolayer-passivated silicon nanocrystals was studied under excitation with vacuum ultraviolet photons (5.1–23 eV). Blue and orange emission bands were observed simultaneously, but the blue band only appeared at low temperatures (8.7 eV). At 8 K, the peak wavelengths of the emission bands were 430±2 nm (blue) and 600±2 nm (orange)....

  15. Enhanced photoluminescence of Si nanocrystals-doped cellulose nanofibers by plasmonic light scattering

    Energy Technology Data Exchange (ETDEWEB)

    Sugimoto, Hiroshi [Department of Electrical and Computer Engineering and Photonics Center, Boston University, 8 Saint Mary Street, Boston, Massachusetts 02215 (United States); Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501 (Japan); Zhang, Ran [Division of Materials Science and Engineering, Boston University, 15 Saint Mary' s Street, Brookline, Massachusetts 02446 (United States); Reinhard, Björn M. [Department of Chemistry and Photonics Center, Boston University, Boston, Massachusetts 02215 (United States); Fujii, Minoru [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501 (Japan); Perotto, Giovanni; Marelli, Benedetto; Omenetto, Fiorenzo G. [Department of Biomedical Engineering and Department of Physics, Tufts University, 4 Colby Street, Medford, Massachusetts 02155 (United States); Dal Negro, Luca, E-mail: dalnegro@bu.edu [Department of Electrical and Computer Engineering and Photonics Center, Boston University, 8 Saint Mary Street, Boston, Massachusetts 02215 (United States); Division of Materials Science and Engineering, Boston University, 15 Saint Mary' s Street, Brookline, Massachusetts 02446 (United States)

    2015-07-27

    We report the development of bio-compatible cellulose nanofibers doped with light emitting silicon nanocrystals and Au nanoparticles via facile electrospinning. By performing photoluminescence (PL) spectroscopy as a function of excitation wavelength, we demonstrate plasmon-enhanced PL by a factor of 2.2 with negligible non-radiative quenching due to plasmon-enhanced scattering of excitation light from Au nanoparticles to silicon nanocrystals inside the nanofibers. These findings provide an alternative approach for the development of plasmon-enhanced active systems integrated within the compact nanofiber geometry. Furthermore, bio-compatible light-emitting nanofibers prepared by a cost-effective solution-based processing are very promising platforms for biophotonic applications such as fluorescence sensing and imaging.

  16. Growth of Si nanocrystals on alumina and integration in memory devices

    Science.gov (United States)

    Baron, T.; Fernandes, A.; Damlencourt, J. F.; De Salvo, B.; Martin, F.; Mazen, F.; Haukka, S.

    2003-06-01

    We present a detailed study of the growth of Si quantum dots (Si QDs) by low pressure chemical vapor deposition on alumina dielectric deposited by atomic layer deposition. The Si QDs density is very high, 1012 cm-2, for a mean diameter between 5 and 10 nm. Al2O3/Si QD stacks have been integrated in memory devices as granular floating gate. The devices demonstrate good charge storage and data retention characteristics.

  17. Nanoindentation Analysis of Elastic/Mechanical Behaviour of Surface of Transparent Glass Ceramics with Fresnoite Ba2TiSi2O8 Nanocrystals

    International Nuclear Information System (INIS)

    Shinozaki, K; Honma, T; Komatsu, T

    2011-01-01

    Transparent glass-ceramics containing Ba 2 TiSi 2 O 8 (BTS) nanocrystals with sizes of ∼200 nm were obtained by heat treatment of 40BaO-20TiO 2 -40SiO 2 glass. Their elastic/mechanical properties were evaluated using the cube-resonance method and the Berkovich nanoindentation technique under standard and 'continuous stiffness measurement' (CSM) modes, and the relation between these properties and the volume fraction (f) of BTS nanocrystals was clarified. The glass-ceramics were obtained by 1-h heat treatments at 760-790 deg. C of the precursor glass, resulting in the formation of BTS nanocrystals with f=2.7-54.5%, with a corresponding Young's modulus of 84-107 GPa. The CSM nanoindentation measurements gave an indentation modulus of 90 GPa for the glass and 110 GPa for the glass-ceramic heat-treated at 790 deg. C, for indentation depths of 200-1500 nm. The results suggest that the BTS nanocrystals confer a high resistance to deformation during indenter loading.

  18. "Nanocrystal bilayer for tandem catalysis"

    Energy Technology Data Exchange (ETDEWEB)

    Yamada, Yusuke; Tsung, Chia Kuang; Huang, Wenyu; Huo, Ziyang; E.Habas, Susan E; Soejima, Tetsuro; Aliaga, Cesar E; Samorjai, Gabor A; Yang, Peidong

    2011-01-24

    Supported catalysts are widely used in industry and can be optimized by tuning the composition and interface of the metal nanoparticles and oxide supports. Rational design of metal-metal oxide interfaces in nanostructured catalysts is critical to achieve better reaction activities and selectivities. We introduce here a new class of nanocrystal tandem catalysts that have multiple metal-metal oxide interfaces for the catalysis of sequential reactions. We utilized a nanocrystal bilayer structure formed by assembling platinum and cerium oxide nanocube monolayers of less than 10 nm on a silica substrate. The two distinct metal-metal oxide interfaces, CeO2-Pt and Pt-SiO2, can be used to catalyse two distinct sequential reactions. The CeO2-Pt interface catalysed methanol decomposition to produce CO and H2, which were subsequently used for ethylene hydroformylation catalysed by the nearby Pt-SiO2 interface. Consequently, propanal was produced selectively from methanol and ethylene on the nanocrystal bilayer tandem catalyst. This new concept of nanocrystal tandem catalysis represents a powerful approach towards designing high-performance, multifunctional nanostructured catalysts

  19. Dy3+-doped nano-glass ceramics comprising NaAlSiO4 and NaY9Si6O26 nanocrystals for white light generation

    International Nuclear Information System (INIS)

    Bagga, Ruchika; Achanta, Venu Gopal; Goel, Ashutosh; Ferreira, José M.F.; Singh, Narinder Pal; Singh, Davinder Paul; Falconieri, Mauro; Sharma, Gopi

    2013-01-01

    Highlights: ► Environment safe glass ceramics were fabricated via heat treatment. ► Optical and structural properties were studied before and after heat treatment. ► White light generation with single RE 3+ ion-doping was observed under UV excitation. ► Emission color temperature was between fluorescent tube and daylight values. - Abstract: The radiative emission properties of the Dy 3+ ions in oxyfluoride glasses and glass ceramics have been investigated for the generation of white light. The X-ray diffraction pattern of the glass ceramics reveals the presence of NaAlSiO 4 nanocrystals along with secondary phase of NaY 9 Si 6 O 26 in the glass matrix after a suitable thermal treatment of the pristine glasses. Intense white light emission has been observed when the samples are excited with 350 nm light. Yellow to blue emission intensity ratios and chromaticity color coordinates have been determined from the visible luminescence spectra. All color coordinates are found to lie in the white region of the chromaticity color diagram proposing the suitability of the present studied materials for color display devices.

  20. Synthesis and green up-conversion fluorescence of colloidal La0.78Yb0.20Er0.02F3/SiO2 core/shell nanocrystals

    International Nuclear Information System (INIS)

    Wang Yan; Qin Weiping; Zhang Jisen; Cao Chunyan; Zhang Jishuang; Jin Ye; Zhu Peifen; Wei Guodong; Wang Guofeng; Wang Lili

    2007-01-01

    Water-soluble PVP-stabilized hexagonal-phase La 0.78 Yb 0.20 Er 0.02 F 3 nanocrystals (NCs) were synthesized by hydrothermal method. The NCs were coated with a very thin silica shell, and amino groups were introduced to the surface of silica shells by copolymerization of 3-aminopropyl(triethoxy)silane. The core/shell NCs can be dispersed in ethanol and water to form stable colloidal solution. The transmission electron microscopy (TEM), selected area electron diffraction (SAED), powder X-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FT-IR) were used to characterize the core/shell materials. In addition, the green up-conversion fluorescence mechanism of La 0.78 Yb 0.20 Er 0.02 F 3 /SiO 2 NCs was studied with a 980-nm diode laser as excitation source. The water solubility, small core/shell particles size, and well colloidal stability mean the green up-conversion fluorescence NCs have potential applications in bioassay. - Graphical abstract: Colloidal La 0.78 Yb 0.20 Er 0.02 F 3 /SiO 2 Core/Shell nanocrystals (NCs) were synthesized and the free amino groups were introduced to the surface of silica shells by copolymerization 3-aminopropyl(triethoxy)silane. The NCs can be dispersed in ethanol and water to form stable colloidal solution. In addition, the NCs exhibit green up-conversion fluorescence under 980-nm excitation

  1. Influence of reductant and germanium concentration on the growth and stress development of germanium nanocrystals in silicon oxide matrix

    International Nuclear Information System (INIS)

    Chew, H G; Zheng, F; Choi, W K; Chim, W K; Foo, Y L; Fitzgerald, E A

    2007-01-01

    Germanium (Ge) nanocrystals have been synthesized by annealing co-sputtered SiO 2 -Ge samples in N 2 or forming gas (90% N 2 +10% H 2 ) at temperatures ranging from 700 to 1000 deg. C. We concluded that the annealing ambient, temperature and Ge concentration have a significant influence on the formation and evolution of the nanocrystals. We showed that a careful selective etching of the annealed samples in hydrofluoric acid solution enabled the embedded Ge nanocrystals to be liberated from the SiO 2 matrix. From the Raman results of the as-grown and the liberated nanocrystals, we established that the nanocrystals generally experienced compressive stress in the oxide matrix and the evolution of these stress states was intimately linked to the distribution, density, size and quality of the Ge nanocrystals

  2. Formation of silicon nanocrystals in multilayer nanoperiodic a-SiO{sub x}/insulator structures from the results of synchrotron investigations

    Energy Technology Data Exchange (ETDEWEB)

    Turishchev, S. Yu., E-mail: tsu@phys.vsu.ru; Terekhov, V. A.; Koyuda, D. A. [Voronezh State University (Russian Federation); Ershov, A. V.; Mashin, A. I. [Lobachevsky State University of Nizhny Novgorod (Russian Federation); Parinova, E. V.; Nesterov, D. N. [Voronezh State University (Russian Federation); Grachev, D. A.; Karabanova, I. A. [Lobachevsky State University of Nizhny Novgorod (Russian Federation); Domashevskaya, E. P. [Voronezh State University (Russian Federation)

    2017-03-15

    The problem of the efficiency of the controllable formation of arrays of silicon nanoparticles is studied on the basis of detailed investigations of the electronic structure of multilayer nanoperiodic a-SiO{sub x}/SiO{sub 2}, a-SiO{sub x}/Al{sub 2}O{sub 3}, and a-SiO{sub x}/ZrO{sub 2} compounds. Using synchrotron radiation and the X-ray absorption near edge structure (XANES) spectroscopy technique, a modification is revealed for the investigated structures under the effect of high-temperature annealing at the highest temperature of 1100°C; this modification is attributed to the formation of silicon nanocrystals in the layers of photoluminescent multilayer structures.

  3. Ab initio study on the effect of structural relaxation on the electronic and optical properties of P-doped Si nanocrystals

    International Nuclear Information System (INIS)

    Pi, Xiaodong; Ni, Zhenyi; Yang, Deren; Delerue, Christophe

    2014-01-01

    In contrast to the conventional doping of bulk silicon (Si), the doping of Si nanocrystals (NCs) that are often smaller than 5 nm in diameter may lead to serious structural changes. Since the electronic and optical properties of Si NCs are intimately associated with their structures, it is critical to understand how doping impacts the structures of Si NCs. By means of ab initio calculation we now compare 1.4 nm phosphorus (P)-doped Si NCs without structural relaxation and those with structural relaxation. Structural changes induced by structural relaxation are manifested by the stretching and compressing of bonds and apparent variations in bond angles. With the increase of the concentration of P structural changes induced by structural relaxation become more serious. It is found that structural relaxation makes differences in the energy-level schemes of P-doped Si NCs. Structural relaxation also causes the binding energy of an electron in a P-doped Si NC to more significantly increase as the concentration of P increases. With the increase of the concentration of P structural relaxation leads to more pronounced changes in the optical absorption of P-doped Si NCs

  4. Liquid phase epitaxy of binary III–V nanocrystals in thin Si layers triggered by ion implantation and flash lamp annealing

    Energy Technology Data Exchange (ETDEWEB)

    Wutzler, Rene, E-mail: r.wutzler@hzdr.de; Rebohle, Lars; Prucnal, Slawomir; Bregolin, Felipe L.; Hübner, Rene; Voelskow, Matthias; Helm, Manfred; Skorupa, Wolfgang [Helmholtz-Zentrum Dresden - Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden (Germany)

    2015-05-07

    The integration of III–V compound semiconductors in Si is a crucial step towards faster and smaller devices in future technologies. In this work, we investigate the formation process of III–V compound semiconductor nanocrystals, namely, GaAs, GaSb, and InP, by ion implantation and sub-second flash lamp annealing in a SiO{sub 2}/Si/SiO{sub 2} layer stack on Si grown by plasma-enhanced chemical vapor deposition. Raman spectroscopy, Rutherford Backscattering spectrometry, and transmission electron microscopy were performed to identify the structural and optical properties of these structures. Raman spectra of the nanocomposites show typical phonon modes of the compound semiconductors. The formation process of the III–V compounds is found to be based on liquid phase epitaxy, and the model is extended to the case of an amorphous matrix without an epitaxial template from a Si substrate. It is shown that the particular segregation and diffusion coefficients of the implanted group-III and group-V ions in molten Si significantly determine the final appearance of the nanostructure and thus their suitability for potential applications.

  5. Composite Films Formed by Cellulose nanocrystals and Latex Nanoparticles: Optical, Structural, and Mechanical Properties

    Science.gov (United States)

    Vollick, Brandon McRae

    This thesis describes the preparation of iridescent, birefringent, composite films composed of cellulose nanocrystals (CNCs), latex nanoparticles (NPs) and a NP crosslinker; hexanediamine (HDA). First, aqueous suspensions were prepared with varying quantities of CNCs, NPs and HDA before equilibrating for one week. The cholesteric (Ch) phase was then cast and dried into a film. The optical, structural and mechanical properties of the film was analyzed. Second, films with identical compositions of CNCs, NPs, and HDA were fabricated in three different ways to yield films of different morphology, (i) fast drying of an isotropic suspension, yielding an isotropic film, (ii) slow drying of an isotropic suspension, yielding a partially Ch films, (iii) slow drying of an equilibrated suspension, yielding a highly Ch film. The optical and mechanical properties of the films was analyzed.

  6. Nanocrystals Technology for Pharmaceutical Science.

    Science.gov (United States)

    Cheng, Zhongyao; Lian, Yumei; Kamal, Zul; Ma, Xin; Chen, Jianjun; Zhou, Xinbo; Su, Jing; Qiu, Mingfeng

    2018-05-17

    Nanocrystals technology is a promising method for improving the dissolution rate and enhancing the bioavailability of poorly soluble drugs. In recent years, it has been developing rapidly and applied to drug research and engineering. Nanocrystal drugs can be formulated into various dosage forms. This review mainly focused on the nanocrystals technology and its application in pharmaceutical science. Firstly, different preparation methods of nanocrystal technology and the characterization of nanocrystal drugs are briefly described. Secondly, the application of nanocrystals technology in pharmaceutical science is mainly discussed followed by the introduction of sustained release formulations. Then, the scaling up process, marketed nanocrystal drug products and regulatory aspects about nanodrugs are summarized. Finally, the specific challenges and opportunities of nanocrystals technology for pharmaceutical science are summarized and discussed. This review will provide a comprehensive guide for scientists and engineers in the field of pharmaceutical science and biochemical engineering. Copyright© Bentham Science Publishers; For any queries, please email at epub@benthamscience.org.

  7. Microscopic study of electrical properties of CrSi2 nanocrystals in silicon

    Directory of Open Access Journals (Sweden)

    Lányi Štefan

    2011-01-01

    Full Text Available Abstract Semiconducting CrSi2 nanocrystallites (NCs were grown by reactive deposition epitaxy of Cr onto n-type silicon and covered with a 50-nm epitaxial silicon cap. Two types of samples were investigated: in one of them, the NCs were localized near the deposition depth, and in the other they migrated near the surface. The electrical characteristics were investigated in Schottky junctions by current-voltage and capacitance-voltage measurements. Atomic force microscopy (AFM, conductive AFM and scanning probe capacitance microscopy (SCM were applied to reveal morphology and local electrical properties. The scanning probe methods yielded specific information, and tapping-mode AFM has shown up to 13-nm-high large-area protrusions not seen in the contact-mode AFM. The electrical interaction of the vibrating scanning tip results in virtual deformation of the surface. SCM has revealed NCs deep below the surface not seen by AFM. The electrically active probe yielded significantly better spatial resolution than AFM. The conductive AFM measurements have shown that the Cr-related point defects near the surface are responsible for the leakage of the macroscopic Schottky junctions, and also that NCs near the surface are sensitive to the mechanical and electrical stress induced by the scanning probe.

  8. Lateral electrical transport, optical properties and photocurrent measurements in two-dimensional arrays of silicon nanocrystals embedded in SiO2

    Directory of Open Access Journals (Sweden)

    Gardelis Spiros

    2011-01-01

    Full Text Available Abstract In this study we investigate the electronic transport, the optical properties, and photocurrent in two-dimensional arrays of silicon nanocrystals (Si NCs embedded in silicon dioxide, grown on quartz and having sizes in the range between less than 2 and 20 nm. Electronic transport is determined by the collective effect of Coulomb blockade gaps in the Si NCs. Absorption spectra show the well-known upshift of the energy bandgap with decreasing NC size. Photocurrent follows the absorption spectra confirming that it is composed of photo-generated carriers within the Si NCs. In films containing Si NCs with sizes less than 2 nm, strong quantum confinement and exciton localization are observed, resulting in light emission and absence of photocurrent. Our results show that Si NCs are useful building blocks of photovoltaic devices for use as better absorbers than bulk Si in the visible and ultraviolet spectral range. However, when strong quantum confinement effects come into play, carrier transport is significantly reduced due to strong exciton localization and Coulomb blockade effects, thus leading to limited photocurrent.

  9. Structure/Processing Relationships of Highly Ordered Lead Salt Nanocrystal Superlattices

    KAUST Repository

    Hanrath, Tobias; Choi, Joshua J.; Smilgies, Detlef-M.

    2009-01-01

    We investigated the influence of processing conditions, nanocrystal/substrate interactions and solvent evaporation rate on the ordering of strongly interacting nanocrystals by synergistically combining electron microscopy and synchrotron-based small-angle X-ray scattering analysis. Spin-cast PbSe nanocrystal films exhibited submicrometer-sized supracrystals with face-centered cubic symmetry and (001)s planes aligned parallel to the substrate. The ordering of drop-cast lead salt nanocrystal films was sensitive to the nature of the substrate and solvent evaporation dynamics. Nanocrystal films drop-cast on rough indium tin oxide substrates were polycrystalline with small grain size and low degree of orientation with respect to the substrate, whereas films drop-cast on flat Si substrates formed highly ordered face-centered cubic supracrystals with close-packed (111)s planes parallel to the substrate. The spatial coherence of nanocrystal films drop-cast in the presence of saturated solvent vapor was significantly improved compared to films drop-cast in a dry environment. Solvent vapor annealing was demonstrated as a postdeposition technique to modify the ordering of nanocrystals in the thin film. Octane vapor significantly improved the long-range order and degree of orientation of initially disordered or polycrystalline nanocrystal assemblies. Exposure to 1,2-ethanedithiol vapor caused partial displacement of surface bound oleic acid ligands and drastically degraded the degree of order in the nanocrystal assembly. © 2009 American Chemical Society.

  10. Structure/Processing Relationships of Highly Ordered Lead Salt Nanocrystal Superlattices

    KAUST Repository

    Hanrath, Tobias

    2009-10-27

    We investigated the influence of processing conditions, nanocrystal/substrate interactions and solvent evaporation rate on the ordering of strongly interacting nanocrystals by synergistically combining electron microscopy and synchrotron-based small-angle X-ray scattering analysis. Spin-cast PbSe nanocrystal films exhibited submicrometer-sized supracrystals with face-centered cubic symmetry and (001)s planes aligned parallel to the substrate. The ordering of drop-cast lead salt nanocrystal films was sensitive to the nature of the substrate and solvent evaporation dynamics. Nanocrystal films drop-cast on rough indium tin oxide substrates were polycrystalline with small grain size and low degree of orientation with respect to the substrate, whereas films drop-cast on flat Si substrates formed highly ordered face-centered cubic supracrystals with close-packed (111)s planes parallel to the substrate. The spatial coherence of nanocrystal films drop-cast in the presence of saturated solvent vapor was significantly improved compared to films drop-cast in a dry environment. Solvent vapor annealing was demonstrated as a postdeposition technique to modify the ordering of nanocrystals in the thin film. Octane vapor significantly improved the long-range order and degree of orientation of initially disordered or polycrystalline nanocrystal assemblies. Exposure to 1,2-ethanedithiol vapor caused partial displacement of surface bound oleic acid ligands and drastically degraded the degree of order in the nanocrystal assembly. © 2009 American Chemical Society.

  11. Optical properties and ensemble characteristics of size purified Silicon nanocrystals

    Science.gov (United States)

    Miller, Joseph Bradley

    Nanotechnology is at the forefront of current scientific research and nanocrystals are being hailed as the 'artificial' atoms of the 21st century. Semiconducting silicon nanocrystals (SiNCs) are prime candidates for potential commercial applications because of silicon's already ubiquitous presence in the semiconductor industry, nontoxicity and abundance in nature. For realization of these potential applications, the properties and behavior of SiNCs need to be understood and enhanced. In this report, some of the main SiNC synthesis schemes are discussed, including those we are currently experimenting with to create our own SiNCs and the one utilized to create the SiNCs used in this study. The underlying physics that governs the unique behavior of SiNCs is then presented. The properties of the as-produced SiNCs are determined to depend strongly on surface passivation and environment. Size purification, an important aspect of nanomaterial utilization, was successfully performed on our SiNCs though density gradient ultracentrifugation. We demonstrate that the size-purified fractions exhibit an enhanced ability for colloidal self-assembly, with better aligned nanocrystal energy levels which promotes greater photostability in close-packed films and produces a slight increase in photoluminescence (PL) quantum yield. The qualities displayed by the fractions are exploited to form SiNC clusters that exhibit photostable PL. An analysis of SiNC cluster (from individual nanocrystals to collections of more than one thousand) blinking and PL shows an improvement in their PL emitting 'on' times. Pure SiNC films and SiNC-polymer nanocomposites are created and the dependence of their PL on temperature is measured. For such nanocomposites, the coupling between the 'coffee-ring' effect and liquid-liquid phase separation is also examined for ternary mixtures of solvent, polymer and semiconducting nanocrystal. We discover that with the right SiNC-polymer concentration and polymer

  12. Surface chemical compositions and dispersity of starch nanocrystals formed by sulfuric and hydrochloric acid hydrolysis.

    Science.gov (United States)

    Wei, Benxi; Xu, Xueming; Jin, Zhengyu; Tian, Yaoqi

    2014-01-01

    Surface chemical compositions of starch nanocrystals (SNC) prepared using sulfuric acid (H2SO4) and hydrochloric acid (HCl) hydrolysis were analyzed by X-ray photoelectron spectroscopy (XPS) and FT-IR. The results showed that carboxyl groups and sulfate esters were presented in SNC after hydrolysis with H2SO4, while no sulfate esters were detected in SNC during HCl-hydrolysis. TEM results showed that, compared to H2SO4-hydrolyzed sample, a wider size distribution of SNC prepared by HCl-hydrolysis were observed. Zeta-potentials were -23.1 and -5.02 mV for H2SO4- and HCl-hydrolyzed SNC suspensions at pH 6.5, respectively. Nevertheless, the zeta-potential values decreased to -32.3 and -10.2 mV as the dispersion pH was adjusted to 10.6. After placed 48 h at pH 10.6, zeta-potential increased to -24.1 mV for H2SO4-hydrolyzed SNC, while no change was detected for HCl-hydrolyzed one. The higher zeta-potential and relative small particle distribution of SNC caused more stable suspensions compared to HCl-hydrolyzed sample.

  13. Surface chemical compositions and dispersity of starch nanocrystals formed by sulfuric and hydrochloric acid hydrolysis.

    Directory of Open Access Journals (Sweden)

    Benxi Wei

    Full Text Available Surface chemical compositions of starch nanocrystals (SNC prepared using sulfuric acid (H2SO4 and hydrochloric acid (HCl hydrolysis were analyzed by X-ray photoelectron spectroscopy (XPS and FT-IR. The results showed that carboxyl groups and sulfate esters were presented in SNC after hydrolysis with H2SO4, while no sulfate esters were detected in SNC during HCl-hydrolysis. TEM results showed that, compared to H2SO4-hydrolyzed sample, a wider size distribution of SNC prepared by HCl-hydrolysis were observed. Zeta-potentials were -23.1 and -5.02 mV for H2SO4- and HCl-hydrolyzed SNC suspensions at pH 6.5, respectively. Nevertheless, the zeta-potential values decreased to -32.3 and -10.2 mV as the dispersion pH was adjusted to 10.6. After placed 48 h at pH 10.6, zeta-potential increased to -24.1 mV for H2SO4-hydrolyzed SNC, while no change was detected for HCl-hydrolyzed one. The higher zeta-potential and relative small particle distribution of SNC caused more stable suspensions compared to HCl-hydrolyzed sample.

  14. Surface Chemical Compositions and Dispersity of Starch Nanocrystals Formed by Sulfuric and Hydrochloric Acid Hydrolysis

    Science.gov (United States)

    Wei, Benxi; Xu, Xueming; Jin, Zhengyu; Tian, Yaoqi

    2014-01-01

    Surface chemical compositions of starch nanocrystals (SNC) prepared using sulfuric acid (H2SO4) and hydrochloric acid (HCl) hydrolysis were analyzed by X-ray photoelectron spectroscopy (XPS) and FT-IR. The results showed that carboxyl groups and sulfate esters were presented in SNC after hydrolysis with H2SO4, while no sulfate esters were detected in SNC during HCl-hydrolysis. TEM results showed that, compared to H2SO4-hydrolyzed sample, a wider size distribution of SNC prepared by HCl-hydrolysis were observed. Zeta-potentials were −23.1 and −5.02 mV for H2SO4- and HCl-hydrolyzed SNC suspensions at pH 6.5, respectively. Nevertheless, the zeta-potential values decreased to −32.3 and −10.2 mV as the dispersion pH was adjusted to 10.6. After placed 48 h at pH 10.6, zeta-potential increased to −24.1 mV for H2SO4-hydrolyzed SNC, while no change was detected for HCl-hydrolyzed one. The higher zeta-potential and relative small particle distribution of SNC caused more stable suspensions compared to HCl-hydrolyzed sample. PMID:24586246

  15. High luminescent fibers with hybrid SiO2-coated CdTe nanocrystals fabricated by electrospinning technique

    International Nuclear Information System (INIS)

    Cao, Yongqiang; Liu, Ning; Yang, Ping; Shi, Ruixia; Ma, Qian; Zhang, Aiyu; Zhu, Yuanna; Wang, Junpeng; Wang, Jianrong

    2015-01-01

    The polyvinylpyrrolidone (PVP) hybrid luminescent micro-/nanofibers doped with the novel hybrid SiO 2 -coated CdTe nanocrystals (HS-CdTe NCs) have been fabricated for the first time via the electrospinning technique. The morphologies and photoluminescence (PL) emissions of HS-CdTe/PVP micro-/nanofibers prepared by doping the HS-CdTe NCs with the different PL peak wavelength (571, 616, and 643 nm) in PVP fibers were investigated by optical and PL microscope. The results revealed that all the HS-CdTe/PVP hybrid fibers showed an ultralong length for several hundreds of micrometers and a relatively uniform diameter of 1000 ∼ 1200 nm. The hybrid fibers displayed a wavelength-tunable PL emission, determining by the PL of doped HS-CdTe NCs. Moreover, similar to the original PL properties of HS-CdTe NCs before the electrospinning, the HS-CdTe/PVP fibers also showed a series of superior PL properties, such as narrow and symmetry PL spectrum, high, and uniform brightness. For comparison purpose, we also prepared three CdTe/PVP hybrid fibers by doping the 553 nm, 600 nm, and 633 nm PL-emitting CdTe NCs respectively in PVP electrospinning fibers. The characterization results showed that, the obtained three CdTe/PVP hybrid fibers had a basically satisfactory micro-/nanofiber morphology with a long length and relatively uniform diameter, but all the fibers exhibited very weak PL emissions. The enormous contrast in PL properties between HS-CdTe/PVP and CdTe/PVP fibers should mainly be ascribed to the different connection modes of ligands with the NCs and the passivation effect of inert hybrid silica shell on HS-CdTe. It is hopeful that the high luminescent HS-CdTe/PVP micro-/nanofibers with the tunable PL peak wavelength would be a good candidate in the optical sensor, light-emitting devices (LEDs), nanometer-scale waveguides, and the other related photonic materials. - Highlights: • The HS-CdTe/PVP electrospun hybrid fibers were fabricated for the first time. • The

  16. SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers

    Science.gov (United States)

    Vieira, E. M. F.; Toudert, J.; Rolo, A. G.; Parisini, A.; Leitão, J. P.; Correia, M. R.; Franco, N.; Alves, E.; Chahboun, A.; Martín-Sánchez, J.; Serna, R.; Gomes, M. J. M.

    2017-08-01

    In this work, we report on the production of regular (SiGe/SiO2)20 multilayer structures by conventional RF-magnetron sputtering, at 350 °C. Transmission electron microscopy, scanning transmission electron microscopy, raman spectroscopy, and x-ray reflectometry measurements revealed that annealing at a temperature of 1000 °C leads to the formation of SiGe nanocrystals between SiO2 thin layers with good multilayer stability. Reducing the nominal SiGe layer thickness (t SiGe) from 3.5-2 nm results in a transition from continuous SiGe crystalline layer (t SiGe ˜ 3.5 nm) to layers consisting of isolated nanocrystals (t SiGe ˜ 2 nm). Namely, in the latter case, the presence of SiGe nanocrystals ˜3-8 nm in size, is observed. Spectroscopic ellipsometry was applied to determine the evolution of the onset in the effective optical absorption, as well as the dielectric function, in SiGe multilayers as a function of the SiGe thickness. A clear blue-shift in the optical absorption is observed for t SiGe ˜ 2 nm multilayer, as a consequence of the presence of isolated nanocrystals. Furthermore, the observed near infrared values of n = 2.8 and k = 1.5 are lower than those of bulk SiGe compounds, suggesting the presence of electronic confinement effects in the nanocrystals. The low temperature (70 K) photoluminescence measurements performed on annealed SiGe/SiO2 nanostructures show an emission band located between 0.7-0.9 eV associated with the development of interface states between the formed nanocrystals and surrounding amorphous matrix.

  17. Detailed investigation of the charge storage in size-controlled Si nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Tiezheng

    2007-07-02

    The objective of this thesis is to investigate noncollinear antiferromagnetic surface spin structures with spin-polarized scanning tunneling microscopy (Sp-STM). The spin-polarized measurements are realized by using a soft magnetic ring as the scanning electrode. A complete separation of topographic and spin signal is achieved through operating the Sp-STM in the differential magnetic mode. Two systems were studied. First, a large ({radical}(10) x 2{radical}(10))R18.4 reconstruction of Mn films with a noncollinear spin structure was found on Fe(001). By combining maps of the spin polarization of two orthogonal directions, the vector field of the polarization in the unit cell was fully constructed. Nearly antiparallel alignments of surface Mn moments was resolved on atomic scale. The complex behavior is explained on basis of the tendency of Mn to form antiferromagnetic coupled surface dimers. Second, the spin structure of chemical ordered NiMn thin films on Cu(001) was investigated. An in-plane magnetic compensated surface was found. Different spin polarizations of Ni and Mn were observed. A partially antiferromagnetic coupling between surface Mn (Ni) moments was attributed to be responsible to the p(2 x 2) reconstruction of the surface. The experimental results are compared with the first principle calculations. (orig.)

  18. Marker experiments in growth studies of Ni2Si, Pd2Si, and CrSi2 formed both by thermal annealing and by ion mixing

    International Nuclear Information System (INIS)

    Hung, L.S.; Mayer, J.W.; Pai, C.S.; Lau, S.S.

    1985-01-01

    Inert markers (evaporated tungsten and silver) were used in growth studies of silicides formed both by thermal annealing and by ion mixing in the Ni/Si, Pd/Si, and Cr/Si systems. The markers were initially imbedded inside silicides and backscattering spectrometry was used to determine the marker displacement after different processing conditions. The results obtained in thermal annealing are quite consistent with that found in previous investigations. Ni is the dominant diffusing species in Ni 2 Si, while Si is the diffusing species in CrSi 2 . In Pd 2 Si, both Pd and Si are moving species with Pd the faster of the two. In contrast, in growth of silicides by ion irradiation Si is the faster diffusing species in all three systems

  19. Silicon Promotes Exodermal Casparian Band Formation in Si-Accumulating and Si-Excluding Species by Forming Phenol Complexes.

    Directory of Open Access Journals (Sweden)

    Alexander T Fleck

    Full Text Available We studied the effect of Silicon (Si on Casparian band (CB development, chemical composition of the exodermal CB and Si deposition across the root in the Si accumulators rice and maize and the Si non-accumulator onion. Plants were cultivated in nutrient solution with and without Si supply. The CB development was determined in stained root cross-sections. The outer part of the roots containing the exodermis was isolated after enzymatic treatment. The exodermal suberin was transesterified with MeOH/BF3 and the chemical composition was measured using gas chromatography-mass spectroscopy (GC-MS and flame ionization detector (GC-FID. Laser ablation-inductively coupled plasma-mass spectroscopy (LA-ICP-MS was used to determine the Si deposition across root cross sections. Si promoted CB formation in the roots of Si-accumulator and Si non-accumulator species. The exodermal suberin was decreased in rice and maize due to decreased amounts of aromatic suberin fractions. Si did not affect the concentration of lignin and lignin-like polymers in the outer part of rice, maize and onion roots. The highest Si depositions were found in the tissues containing CB. These data along with literature were used to suggest a mechanism how Si promotes the CB development by forming complexes with phenols.

  20. Heterogeneous nucleation of amorphous alloys on catalytic nanoparticles to produce 2D patterned nanocrystal arrays

    Energy Technology Data Exchange (ETDEWEB)

    Gangopadhyay, A K [Department of Physics, Washington University in St Louis, MO 63130 (United States); Krishna, H [Department of Physics, Washington University in St Louis, MO 63130 (United States); Favazza, C [Department of Physics, Washington University in St Louis, MO 63130 (United States); Miller, C [Center for Materials Innovation, Washington University in St Louis, MO 63130 (United States); Kalyanaraman, R [Department of Physics, Washington University in St Louis, MO 63130 (United States)

    2007-12-05

    Templates are widely used to produce artificial nanostructures. Here, laser-assisted self-organization has been used to form one- and two-dimensional (D) nanoarrays of Cu nanocrystals. Using these nanoarrays as a template, a 2D patterned ferromagnetic nanostructure of FeCrSi nanocrystals has been produced by heterogeneous nucleation and growth of nanocrystals by partial devitrification from an amorphous Fe{sub 64.5}Cr{sub 10}Si{sub 13.5}B{sub 9}Nb{sub 3} alloy with the Cu nanoparticles acting as catalytic nucleation sites. The interaction among the ferromagnetic nanocrystals via the residual amorphous matrix can be controlled by suitable choice of the amorphous alloy composition. Although demonstrated for a ferromagnetic system, the processing method may have much wider applicability for producing artificial nanostructures of a wide variety of materials when materials-specific catalysts and amorphous alloy compositions are judiciously chosen.

  1. Heterogeneous nucleation of amorphous alloys on catalytic nanoparticles to produce 2D patterned nanocrystal arrays

    International Nuclear Information System (INIS)

    Gangopadhyay, A K; Krishna, H; Favazza, C; Miller, C; Kalyanaraman, R

    2007-01-01

    Templates are widely used to produce artificial nanostructures. Here, laser-assisted self-organization has been used to form one- and two-dimensional (D) nanoarrays of Cu nanocrystals. Using these nanoarrays as a template, a 2D patterned ferromagnetic nanostructure of FeCrSi nanocrystals has been produced by heterogeneous nucleation and growth of nanocrystals by partial devitrification from an amorphous Fe 64.5 Cr 10 Si 13.5 B 9 Nb 3 alloy with the Cu nanoparticles acting as catalytic nucleation sites. The interaction among the ferromagnetic nanocrystals via the residual amorphous matrix can be controlled by suitable choice of the amorphous alloy composition. Although demonstrated for a ferromagnetic system, the processing method may have much wider applicability for producing artificial nanostructures of a wide variety of materials when materials-specific catalysts and amorphous alloy compositions are judiciously chosen

  2. Formation and characterization of varied size germanium nanocrystals by electron microscopy, Raman spectroscopy, and photoluminescence

    DEFF Research Database (Denmark)

    Ou, Haiyan; Ou, Yiyu; Liu, Chuan

    2011-01-01

    Germanium nanocrystals are being extensively examined. Their unique optical properties (brought about by the quantum confinement effect) could potentially be applied in wide areas of nonlinear optics, light emission and solid state memory etc. In this paper, Ge nanocrystals embedded in a SiO2...... matrix were formed by complementary metal-oxide-semiconductor compatible technology, e.g. plasma enhanced chemical vapour deposition and annealing. Different sizes of the Ge nanocrystals were prepared and analyzed by transmission electron microscopy with respect to their size, distribution...... and crystallization. The samples of different size Ge nanocrystals embedded in the SiO2 matrix were characterized by Raman spectroscopy and photoluminescence. Interplayed size and strain effect of Ge nanocystals was demonstrated by Raman spectroscopy after excluding the thermal effect with proper excitation laser...

  3. Structural, optical and electrical properties of silicon nanocrystals embedded in SixC1−x/SiC multilayer systems for photovoltaic applications

    International Nuclear Information System (INIS)

    López-Vidrier, J.; Hernández, S.; Samà, J.; Canino, M.; Allegrezza, M.; Bellettato, M.; Shukla, R.; Schnabel, M.; Löper, P.; López-Conesa, L.; Estradé, S.; Peiró, F.; Janz, S.; Garrido, B.

    2013-01-01

    Highlights: ► We study the structural, optical and electrical properties of Si x C 1−x /SiC multilayers with different Si excess. ► Multilayer structure is destroyed after annealing at 1100 °C. ► Energy filtered TEM confirmed the Si NC formation. ► Sample thickness values from optical simulations are in agreement with TEM observations. ► The crystallization degree of the NCs was evaluated by Raman scattering and R and T techniques. ► The system conductivity depends on the NC size. ► The presence of a defective oxycarbide layer on top did not allow for obtaining useful electrical information. -- Abstract: In this work we present a structural, optical and electrical characterization of Si x C 1−x /SiC multilayer systems with different silicon content. After the deposition process, an annealing treatment was carried out in order to induce the silicon nanocrystals formation. By means of energy-filtered transmission electron microscopy (EFTEM) we observed the structural morphology of the multilayers and the presence of crystallized silicon nanoprecipitates for samples annealed up to 1100 °C. We discuss the suitability of optical techniques such as Raman scattering and reflectance and transmittance (R and T) for the evaluation of the crystalline fraction of our samples at different silicon excess ranges. In addition, the combination of R and T measurements with simulation has proved to be a useful instrument to confirm the structural properties observed by EFTEM. Finally, we explore the origin of the extremely high current density revealed by electrical measurements, probably due to the presence of an undesired defective SiC y O z ternary compound layer, already supported by the structural and optical results. Nevertheless, the variation of the electrical measurements with the silicon amount indicates a small but significant contribution from the multilayers

  4. Correlation between SnO{sub 2} nanocrystals and optical properties of Eu{sup 3+} ions in SiO{sub 2} matrix: Relation of crystallinity, composition, and photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Thanh, Bui Quang [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST), No.1 Dai Co Viet, Hanoi (Viet Nam); Ha, Ngo Ngoc, E-mail: hann@itims.edu.vn [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST), No.1 Dai Co Viet, Hanoi (Viet Nam); Khiem, Tran Ngoc, E-mail: khiem@itims.edu.vn [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST), No.1 Dai Co Viet, Hanoi (Viet Nam); Chien, Nguyen Duc [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST), No.1 Dai Co Viet, Hanoi (Viet Nam); School of Engineering Physics (SEP), Hanoi University of Science and Technology (HUST), No.1 Dai Co Viet, Hanoi (Viet Nam)

    2015-07-15

    We report characteristics and optical properties of Eu{sup 3+}-doped SnO{sub 2} nanocrystals dispersed in SiO{sub 2} matrix. Samples are prepared by the sol–gel method. Crystallinity of SnO{sub 2} nanocrystals is examined by X-ray diffraction experiments. At annealing temperatures from 900 to 1200 °C, we observe the formation of single tetragonal rutile structure of SnO{sub 2} nanocrystals. Average sizes of SnO{sub 2} nanocrystals within 3–7 nm are estimated by Debye–Scherrer equation. Intense photoluminescent spectra of Eu{sup 3+} ions consist of a series of resolved emission bands within 570–645 nm, which are varied with different sample-preparation conditions. We show the efficient excitation process of Eu{sup 3+} ions through SnO{sub 2} nanocrystals in the materials. Microscopic structure of SnO{sub 2} nanoparticles and optical properties of Eu{sup 3+} ions are also presented and discussed. - Highlights: • Thin layers of Eu{sup 3+} doped SnO{sub 2} nanocrystals dispersed in SiO{sub 2} were prepared by sol-gel method and spin-coating process. • Formation of single-phase tetragonal rutile structure of SnO{sub 2} nanocrystals and highly efficient optical excitation of the Eu{sup 3+} dopants were exhibited. • Relations of the crystallinity and composition of SnO{sub 2} and optical properties of Eu{sup 3+} dopants were comprehensively investigated and presented. • Allocations of major optically-active Eu{sup 3+} ions in the materials were deduced from their emission bands.

  5. Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO{sub 2} for non-volatile memory device

    Energy Technology Data Exchange (ETDEWEB)

    Stepina, N.P. [Institute of Semiconductor Physics, Lavrenteva 13, 630090 Novosibirsk (Russian Federation)], E-mail: nstepina@mail.ru; Dvurechenskii, A.V.; Armbrister, V.A.; Kirienko, V.V.; Novikov, P.L.; Kesler, V.G.; Gutakovskii, A.K.; Smagina, Z.V.; Spesivtzev, E.V. [Institute of Semiconductor Physics, Lavrenteva 13, 630090 Novosibirsk (Russian Federation)

    2008-11-03

    A floating gate memory structure, utilizing Ge nanocrystals (NCs) deposited on tunnel SiO{sub 2}, have been fabricated using pulsed low energy ion-beam induced molecular-beam deposition (MBD) in ultra-high vacuum. The ion-beam action is shown to stimulate the nucleation of Ge NCs when being applied after thin Ge layer deposition. Growth conditions for independent change of NCs size and array density were established allowing to optimize the structure parameters required for memory device. Activation energy E = 0.25 eV was determined from the temperature dependence of NCs array density. Monte Carlo simulation has shown that the process, determining NCs array density, is the surface diffusion. Embedding of the crystalline Ge dots into silicon oxide was carried out by selective oxidation of Si(100)/SiO{sub 2} /Ge(NCs)/poly-Si structure. MOS-capacitor obtained after oxidation showed a hysteresis in its C-V curves attributed to charge retention in the Ge dots.

  6. Annealing temperature effect on structure and electrical properties of films formed of Ge nanoparticles in SiO2

    International Nuclear Information System (INIS)

    Stavarache, Ionel; Lepadatu, Ana-Maria; Stoica, Toma; Ciurea, Magdalena Lidia

    2013-01-01

    Ge–SiO 2 films with high Ge/Si atomic ratio of about 1.86 were obtained by co-sputtering of Ge and SiO 2 targets and subsequently annealed at different temperatures between 600 and 1000 °C in a conventional furnace in order to show how the annealing process influences the film morphology concerning the Ge nanocrystal and/or amorphous nanoparticle formation and to study their electrical behaviour. Atomic force microscopy (AFM) imaging, Raman spectroscopy and electrical conductance measurements were performed in order to find out the annealing effect on the film surface morphology, as well as the Ge nanoparticle formation in correlation with the hopping conductivity of the films. AFM images show that the films annealed at 600 and 700 °C present a granular surface with particle height of about 15 nm, while those annealed at higher temperatures have smoother surface. The Raman investigations evidence Ge nanocrystals (including small ones) coexisting with amorphous Ge in the films annealed at 600 °C and show that almost all Ge is crystallized in the films annealed at 700 °C. The annealing at 800 °C disadvantages the Ge nanocrystal formation due to the strong Ge diffusion. This transition in Ge nanocrystals formation process by annealing temperature increase from 700 to 800 °C revealed by AFM and Raman spectroscopy measurements corresponds to a change in the electrical transport mechanism. Thus, in the 700 °C annealed films, the current depends on temperature according to a T −1/2 law which is typical for a tunnelling mechanism between neighbour Ge nanocrystals. In the 800 °C annealed films, the current–temperature characteristic has a T −1/4 dependence showing a hopping mechanism within an electronic band of localized states related to diffused Ge in SiO 2 .

  7. Determination of absorption cross-section of Si nanocrystals by two independent methods based on either absorption or luminescence

    Czech Academy of Sciences Publication Activity Database

    Valenta, J.; Greben, M.; Remeš, Zdeněk; Gutsch, S.; Hiller, D.; Zacharias, M.

    2016-01-01

    Roč. 102, č. 2 (2016), 1-5, č. článku 023102. ISSN 0003-6951 R&D Projects: GA ČR(CZ) GA14-05053S; GA MŠk(CZ) LD14011 Institutional support: RVO:68378271 Keywords : photoluminescence * absorption spectroscopy * photothermal spectroscopy * semiconductors * nanocrystals Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.411, year: 2016

  8. Optical properties of transparent Li2O-Ga2O3-SiO2 glass-ceramics embedding Ni-doped nanocrystals

    International Nuclear Information System (INIS)

    Suzuki, Takenobu; Murugan, Ganapathy Senthil; Ohishi, Yasutake

    2005-01-01

    Transparent Li 2 O-Ga 2 O 3 -SiO 2 (LGS) glass-ceramics embedding Ni:LiGa 5 O 8 nanocrystals were fabricated. An intense emission centered around 1300 nm with the width of more than 300 nm was observed by 976 nm photoexcitation of the glass-ceramics. The lifetime was more than 900 μs at 5 K and 500 μs at 300 K. The emission could be attributed to the 3 T 2g ( 3 F)→ 3 A 2g ( 3 F) transition of Ni 2+ in distorted octahedral sites in LiGa 5 O 8 . The product of stimulated emission cross section and lifetime for the emission was about 3.7x10 -24 cm 2 s and was a sufficiently practical value

  9. Intensely emitting CdTe nanocrystals retained initial photoluminescence efficiency in sol-gel derived Si1-xZrxO2 glass

    International Nuclear Information System (INIS)

    Yang, P.; Murase, N.

    2007-01-01

    Emitting CdTe nanocrystals (NCs) were embedded in pure glass matrices (Si 1-x Zr x O 2 , x≤0.15) using a controlled sol-gel method, where the pre-hydrolyzed condition, the molar ratio of Zr/Si, the gelation time, the pH, and the amount of alcohol were judiciously optimized considering the surface condition of the NCs and the mechanism of the glass formation. As a result, the prepared glass phosphor exhibited high photoluminescence efficiencies (40% for green and 60% for red when Zr/Si was 5-10%) by retaining their initial values as in CdTe colloidal solution. To our knowledge, these values are the highest among those ever obtained for any solid matrices containing NCs. Because of the existence of Zr, the prepared glasses exhibit much better resistance against the ambient atmosphere, heat-treatment, and boiling water compared with pure silica glass (x=0) or the glass prepared from our other methods using a silane coupling agent. Thus, the obtained glass is promising for applications such as optical devices. (orig.)

  10. Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application

    Directory of Open Access Journals (Sweden)

    Gloux Florence

    2011-01-01

    Full Text Available Abstract Ge nanocrystals (Ge-NCs embedded in SiN dielectrics with HfO2/SiO2 stack tunnel dielectrics were synthesized by utilizing low-energy (≤5 keV ion implantation method followed by conventional thermal annealing at 800°C, the key variable being Ge+ ion implantation energy. Two different energies (3 and 5 keV have been chosen for the evolution of Ge-NCs, which have been found to possess significant changes in structural and chemical properties of the Ge+-implanted dielectric films, and well reflected in the charge storage properties of the Al/SiN/Ge-NC + SiN/HfO2/SiO2/Si metal-insulator-semiconductor (MIS memory structures. No Ge-NC was detected with a lower implantation energy of 3 keV at a dose of 1.5 × 1016 cm-2, whereas a well-defined 2D-array of nearly spherical and well-separated Ge-NCs within the SiN matrix was observed for the higher-energy-implanted (5 keV sample for the same implanted dose. The MIS memory structures implanted with 5 keV exhibits better charge storage and retention characteristics compared to the low-energy-implanted sample, indicating that the charge storage is predominantly in Ge-NCs in the memory capacitor. A significant memory window of 3.95 V has been observed under the low operating voltage of ± 6 V with good retention properties, indicating the feasibility of these stack structures for low operating voltage, non-volatile memory devices.

  11. Annealing-induced evolution of optical properties of the multilayered nanoperiodic SiOx/ZrO2 system containing Si nanoclusters

    International Nuclear Information System (INIS)

    Ershov, A. V.; Tetelbaum, D. I.; Chugrov, I. A.; Mashin, A. I.; Mikhaylov, A. N.; Nezhdanov, A. V.; Ershov, A. A.; Karabanova, I. A.

    2011-01-01

    The photoluminescence, infrared absorption, and Raman spectra of amorphous multilayered nanoperiodic a-SiO x /ZrO 2 structures produced by vacuum evaporation and then annealed at different temperatures (500–1100°C) are studied. It is established that the evolution of the optical properties with increasing annealing temperature is controlled by sequential transformation of Si clusters formed in the SiO x layers from nonphase inclusions to amorphous clusters and then to nanocrystals. The finally formed nanocrystals are limited in sizes by the thickness of the initial SiO x layers and by chemical reactions with ZrO 2 .

  12. Ultrathin silicon dioxide layers with a low leakage current density formed by chemical oxidation of Si

    Science.gov (United States)

    Asuha,; Kobayashi, Takuya; Maida, Osamu; Inoue, Morio; Takahashi, Masao; Todokoro, Yoshihiro; Kobayashi, Hikaru

    2002-10-01

    Chemical oxidation of Si by use of azeotrope of nitric acid and water can form 1.4-nm-thick silicon dioxide layers with a leakage current density as low as those of thermally grown SiO2 layers. The capacitance-voltage (C-V) curves for these ultrathin chemical SiO2 layers have been measured due to the low leakage current density. The leakage current density is further decreased to approx1/5 (cf. 0.4 A/cm2 at the forward gate bias of 1 V) by post-metallization annealing at 200 degC in hydrogen. Photoelectron spectroscopy and C-V measurements show that this decrease results from (i) increase in the energy discontinuity at the Si/SiO2 interface, and (ii) elimination of Si/SiO2 interface states and SiO2 gap states.

  13. The effect of oxide shell thickness on the structural, electronic, and optical properties of Si-SiO{sub 2} core-shell nano-crystals: A (time dependent)density functional theory study

    Energy Technology Data Exchange (ETDEWEB)

    Nazemi, Sanaz, E-mail: s.nazemi@ut.ac.ir, E-mail: pourfath@ut.ac.ir; Soleimani, Ebrahim Asl [School of Electrical and Computer Engineering, University of Tehran, Tehran 14395-515 (Iran, Islamic Republic of); Pourfath, Mahdi, E-mail: s.nazemi@ut.ac.ir, E-mail: pourfath@ut.ac.ir [School of Electrical and Computer Engineering, University of Tehran, Tehran 14395-515 (Iran, Islamic Republic of); Institute for Microelectronics, Technische Universität Wien, Wien A-1040 (Austria); Kosina, Hans [Institute for Microelectronics, Technische Universität Wien, Wien A-1040 (Austria)

    2016-04-14

    Due to their tunable properties, silicon nano-crystals (NC) are currently being investigated. Quantum confinement can generally be employed for size-dependent band-gap tuning at dimensions smaller than the Bohr radius (∼5 nm for silicon). At the nano-meter scale, however, increased surface-to-volume ratio makes the surface effects dominant. Specifically, in Si-SiO{sub 2} core-shell semiconductor NCs the interfacial transition layer causes peculiar electronic and optical properties, because of the co-existence of intermediate oxidation states of silicon (Si{sup n+}, n = 0–4). Due to the presence of the many factors involved, a comprehensive understanding of the optical properties of these NCs has not yet been achieved. In this work, Si-SiO{sub 2} NCs with a diameter of 1.1 nm and covered by amorphous oxide shells with thicknesses between 2.5 and 4.75 Å are comprehensively studied, employing density functional theory calculations. It is shown that with increased oxide shell thickness, the low-energy part of the optical transition spectrum of the NC is red shifted and attenuated. Moreover, the absorption coefficient is increased in the high-energy part of the spectrum which corresponds to SiO{sub 2} transitions. Structural examinations indicate a larger compressive stress on the central silicon cluster with a thicker oxide shell. Examination of the local density of states reveals the migration of frontier molecular orbitals from the oxide shell into the silicon core with the increase of silica shell thickness. The optical and electrical properties are explained through the analysis of the density of states and the spatial distribution of silicon sub-oxide species.

  14. Photoemission studies of semiconductor nanocrystals

    International Nuclear Information System (INIS)

    Hamad, K.S.; Roth, R.; Alivisatos, A.P.

    1997-01-01

    Semiconductor nanocrystals have been the focus of much attention in the last ten years due predominantly to their size dependent optical properties. Namely, the band gap of nanocrystals exhibits a shift to higher energy with decreasing size due to quantum confinement effects. Research in this field has employed primarily optical techniques to study nanocrystals, and in this respect this system has been investigated extensively. In addition, one is able to synthesize monodisperse, crystalline particles of CdS, CdSe, Si, InP, InAs, as well as CdS/HgS/CdS and CdSe/CdS composites. However, optical spectroscopies have proven ambiguous in determining the degree to which electronic excitations are interior or surface admixtures or giving a complete picture of the density of states. Photoemission is a useful technique for understanding the electronic structure of nanocrystals and the effects of quantum confinement, chemical environments of the nanocrystals, and surface coverages. Of particular interest to the authors is the surface composition and structure of these particles, for they have found that much of the behavior of nanocrystals is governed by their surface. Previously, the authors had performed x-ray photoelectron spectroscopy (XPS) on CdSe nanocrystals. XPS has proven to be a powerful tool in that it allows one to determine the composition of the nanocrystal surface

  15. Colloidal GdVO4:Eu3+@SiO2 nanocrystals for highly selective and sensitive detection of Cu2+ ions

    Science.gov (United States)

    Liang, Yanjie; Noh, Hyeon Mi; Park, Sung Heum; Choi, Byung Chun; Jeong, Jung Hyun

    2018-03-01

    Nowadays, in view of health and safety demands, the controlled design of selective and sensitive sensors for Cu2+ detection is of considerable importance. Therefore, we construct herein core-shell colloidal GdVO4:Eu3+@SiO2 nanocrystals (NCs) as optical sensor for the detection of Cu2+, which were synthesized by a facile hydrothermal reaction and encapsulated with a uniform layer of ultrathin silica through a sol-gel strategy. The NCs present strong red emission due to energy transfer from VO43- groups to Eu3+ when exciting with ultraviolet (UV) light. This intense red emission from Eu3+ could be selectively quenched in the presence of Cu2+ in comparison to other metal ions and the limit of detection is as low as 80 nM in aqueous solution. It is revealed that the spectral overlap between the emission band of NCs and the absorption of Cu2+ accounts for this intriguing luminescence behavior. The detection ability is highly reversible by the addition of ethylenediaminetetraacetic acid (EDTA) with the recovery of almost 100% of the original luminescence. The luminescence quenching and recovery processes can be performed repeatedly with good sensing ability. These remarkable performances allow the colloidal GdVO4:Eu3+@SiO2 NCs a promising fluorescence chemosensor for detecting Cu2+ ions in aqueous solution.

  16. Chemically etched sharpened tip of transparent crystallized glass fibers with nonlinear optical Ba2TiSi2O8 nanocrystals

    International Nuclear Information System (INIS)

    Enomoto, Itaru; Benino, Yasuhiko; Komatsu, Takayuki; Fujiwara, Takumi

    2007-01-01

    Glass fibers with a diameter of ∼100 μm are drawn by just pulling up melts of 40BaO·20TiO 2 ·40SiO 2 glass, and transparent crystallized glass fibers consisting of nonlinear optical fresnoite Ba 2 TiSi 2 O 8 nanocrystals (particle size: ∼100-200 nm) are fabricated by crystallization of glass fibers. Precursor glass fibers and nanocrystallized glass fibers are etched chemically using a meniscus method, in which an etching solution of 0.1wt%-HF/hexane is used. Glass fibers with sharpened tips (e.g., the taper length is ∼L=200 μm and the tip angle is ∼θ=23deg) are obtained. It is found that etched nanocrystallized glass fibers also have sharpened tips (L=50 μm, θ=80deg). Compared with precursor glass fibers, nanocrystallized glass fibers show a high resistance against chemical etching in a 0.1 wt%HF solution. Although sharpened tips in nanocrystallized glass fibers do not have nanoscaled apertures, the present study suggests that nanocrystallized glass fibers showing second harmonic generations would have a potential for fiber-type light control optical devices. (author)

  17. Method of synthesizing pyrite nanocrystals

    Science.gov (United States)

    Wadia, Cyrus; Wu, Yue

    2013-04-23

    A method of synthesizing pyrite nanocrystals is disclosed which in one embodiment includes forming a solution of iron (III) diethyl dithiophosphate and tetra-alkyl-ammonium halide in water. The solution is heated under pressure. Pyrite nanocrystal particles are then recovered from the solution.

  18. Nanocrystal/sol-gel nanocomposites

    Science.gov (United States)

    Petruska, Melissa A [Los Alamos, NM; Klimov, Victor L [Los Alamos, NM

    2007-06-05

    The present invention is directed to solid composites including colloidal nanocrystals within a sol-gel host or matrix and to processes of forming such solid composites. The present invention is further directed to alcohol soluble colloidal nanocrystals useful in formation of sol-gel based solid composites.

  19. High-dose MeV electron irradiation of Si-SiO2 structures implanted with high doses Si+

    Science.gov (United States)

    Kaschieva, S.; Angelov, Ch; Dmitriev, S. N.

    2018-03-01

    The influence was studied of 22-MeV electron irradiation on Si-SiO2 structures implanted with high-fluence Si+ ions. Our earlier works demonstrated that Si redistribution is observed in Si+-ion-implanted Si-SiO2 structures (after MeV electron irradiation) only in the case when ion implantation is carried out with a higher fluence (1016 cm-2). We focused our attention on the interaction of high-dose MeV electron irradiation (6.0×1016 cm-2) with n-Si-SiO2 structures implanted with Si+ ions (fluence 5.4×1016 cm-2 of the same order magnitude). The redistribution of both oxygen and silicon atoms in the implanted Si-SiO2 samples after MeV electron irradiation was studied by Rutherford back-scattering (RBS) spectroscopy in combination with a channeling technique (RBS/C). Our results demonstrated that the redistribution of oxygen and silicon atoms in the implanted samples reaches saturation after these high doses of MeV electron irradiation. The transformation of amorphous SiO2 surface into crystalline Si nanostructures (after MeV electron irradiation) was evidenced by atomic force microscopy (AFM). Silicon nanocrystals are formed on the SiO2 surface after MeV electron irradiation. The shape and number of the Si nanocrystals on the SiO2 surface depend on the MeV electron irradiation, while their size increases with the dose. The mean Si nanocrystals height is 16-20 nm after irradiation with MeV electrons at the dose of 6.0×1016 cm-2.

  20. Dislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers.

    Science.gov (United States)

    Niu, Gang; Capellini, Giovanni; Schubert, Markus Andreas; Niermann, Tore; Zaumseil, Peter; Katzer, Jens; Krause, Hans-Michael; Skibitzki, Oliver; Lehmann, Michael; Xie, Ya-Hong; von Känel, Hans; Schroeder, Thomas

    2016-03-04

    The integration of dislocation-free Ge nano-islands was realized via selective molecular beam epitaxy on Si nano-tip patterned substrates. The Si-tip wafers feature a rectangular array of nanometer sized Si tips with (001) facet exposed among a SiO2 matrix. These wafers were fabricated by complementary metal-oxide-semiconductor (CMOS) compatible nanotechnology. Calculations based on nucleation theory predict that the selective growth occurs close to thermodynamic equilibrium, where condensation of Ge adatoms on SiO2 is disfavored due to the extremely short re-evaporation time and diffusion length. The growth selectivity is ensured by the desorption-limited growth regime leading to the observed pattern independence, i.e. the absence of loading effect commonly encountered in chemical vapor deposition. The growth condition of high temperature and low deposition rate is responsible for the observed high crystalline quality of the Ge islands which is also associated with negligible Si-Ge intermixing owing to geometric hindrance by the Si nano-tip approach. Single island as well as area-averaged characterization methods demonstrate that Ge islands are dislocation-free and heteroepitaxial strain is fully relaxed. Such well-ordered high quality Ge islands present a step towards the achievement of materials suitable for optical applications.

  1. Segregation gettering by implantation-formed cavities and B-Si precipitates in silicon

    International Nuclear Information System (INIS)

    Myers, S.M.; Petersen, G.A.; Follstaedt, D.M.

    1998-01-01

    The authors show that Fe, Co, Cu, and Au in Si undergo strong segregation gettering to cavities and B-Si precipitates formed by He or B ion implantation and annealing. The respective mechanisms are argued to be chemisorption on the cavity walls and occupation of solution sites within the disordered, B-rich, B-Si phase. The strengths of the reactions are evaluated, enabling prediction of gettering performance

  2. Ultrathin SiO{sub 2} layer formed by the nitric acid oxidation of Si (NAOS) method to improve the thermal-SiO{sub 2}/Si interface for crystalline Si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Matsumoto, Taketoshi; Nakajima, Hiroki; Irishika, Daichi; Nonaka, Takaaki; Imamura, Kentaro; Kobayashi, Hikaru, E-mail: h.kobayashi@sanken.osaka-u.ac.jp

    2017-02-15

    Highlights: • The density of interface states at the SiO{sub 2}/Si interface is decreased by NAOS. • The minority carrier lifetime is increased by the NAOS treatment. • Great interfacial properties of the NAOS layer are kept after thermal oxidation. - Abstract: A combination of the nitric acid oxidation of Si (NAOS) method and post-thermal oxidation is found to efficiently passivate the SiO{sub 2}/n-Si(100) interface. Thermal oxidation at 925 °C and annealing at 450 °C in pure hydrogen atmosphere increases the minority carrier lifetime by three orders of magnitude, and it is attributed to elimination of Si dangling bond interface states. Fabrication of an ultrathin, i.e., 1.1 nm, NAOS SiO{sub 2} layer before thermal oxidation and H{sub 2} annealing further increases the minority carrier lifetime by 30% from 8.6 to 11.1 ms, and decreased the interface state density by 10% from 6.9 × 10{sup 9} to 6.3 × 10{sup 9}eV{sup −1} cm{sup −2}. After thermal oxidation at 800 °C, the SiO{sub 2} layer on the NAOS-SiO{sub 2}/Si(100) structure is 2.26 nm thick, i.e., 0.24 nm thicker than that on the Si(100) surface, while after thermal oxidation at 925 °C, it is 4.2 nm thick, i.e., 0.4 nm thinner than that on Si(100). The chemical stability results from the higher atomic density of a NAOS SiO{sub 2} layer than that of a thermal oxide layer as reported in Ref. [28] (Asuha et al., 2002). Higher minority carrier lifetime in the presence of the NAOS layer indicates that the NAOS-SiO{sub 2}/Si interface with a low interface state density is preserved after thermal oxidation, which supports out-diffusion oxidation mechanism, by which a thermal oxide layer is formed on the NAOS SiO{sub 2} layer.

  3. Phase selection and microstructure in directional solidification of glass forming Pd-Si-Cu alloys

    Science.gov (United States)

    Huo, Yang

    Phase selection and microstructure formation during the rapid solidification of alloy melts has been a topic of substantial interest over the last several decades, attributed mainly to the access to novel structures involving metastable crystalline and non-crystalline phases. In this work, Bridgeman type directional solidification was conducted in Pd-Si-Cu glass forming system to study such cooling rate dependent phase transition and microstructure formation. The equilibrium state for Pd-Si-Cu ternary system was investigated through three different works. First of all, phase stabilities for Pd-Si binary system was accessed with respects of first-principles and experiments, showing Pd5Si, Pd9Si2, Pd3Si and Pd 2Si phase are stable all way to zero Kevin while PdSi phase is a high temperature stable phase, and Pd2Si phase with Fe2P is a non-stoichiometry phase. A thermodynamic database was developed for Pd-Si system. Second, crystal structures for compounds with ternary compositions were studied by XRD, SEM and TEM, showing ordered and disordered B2/bcc phases are stable in Pd-rich part. At last, based on many phase equilibria and phase transitions data, a comprehensive thermodynamic discrption for Pd-Si-Cu ternary system was first time to be developed, from which different phase diagrams and driving force for kinetics can be calculated. Phase selection and microstructure formation in directional solidification of the best glass forming composition, Pd 77.5Si16.5Cu6, in this system with growth velocities from 0.005 to 7.5mm/s was systematically studied and the solidification pathways at different conditions were interpreted from thermodynamic simulation. The results show that for growth velocities are smaller than 0.1mm/s Pd 3Si phase is primary phase and Pd9Si2 phase is secondary phase, the difficulty for Pd9Si2 phase nucleation gives rise to the formation of two different eutectic structure. For growth velocities between 0.4 and 1mm/s, instead of Pd3Si phase, Pd9Si2

  4. Net-shape forming and properties of high volume fraction SiCp/Al composites

    International Nuclear Information System (INIS)

    Ren Shubin; Qu Xuanhui; Guo Jia; He Xinbo; Qin Mingli; Shen Xiaoyu

    2009-01-01

    High performance SiCp/Al composites have been realized their net-shape forming by use of a novel process-ceramic injection molding (CIM) for the preparation of SiC preform and pressureless infiltration of aluminum alloys. The dimension precision of prepared SiCp/Al parts could reach about ±0.3%, and their properties could also better meet the requirement of electronic packaging on the materials. In this paper, the CIM process to fabricate SiC preform and the infiltration of SiC preform by Al alloys have been discussed in detail. Additionally, the properties of prepared SiCp/Al composites have also been given research and evaluation.

  5. Energy Transfer Efficiency from ZnO-Nanocrystals to Eu3+ Ions Embedded in SiO₂ Film for Emission at 614 nm.

    Science.gov (United States)

    Mangalam, Vivek; Pita, Kantisara

    2017-08-10

    In this work, we study the energy transfer mechanism from ZnO nanocrystals (ZnO-nc) to Eu 3+ ions by fabricating thin-film samples of ZnO-nc and Eu 3+ ions embedded in a SiO₂ matrix using the low-cost sol-gel technique. The time-resolved photoluminescence (TRPL) measurements from the samples were analyzed to understand the contribution of energy transfer from the various ZnO-nc emission centers to Eu 3+ ions. The decay time obtained from the TRPL measurements was used to calculate the energy transfer efficiencies from the ZnO-nc emission centers, and these results were compared with the energy transfer efficiencies calculated from steady-state photoluminescence emission results. The results in this work show that high transfer efficiencies from the excitonic and Zn defect emission centers is mostly due to the energy transfer from ZnO-nc to Eu 3+ ions which results in the radiative emission from the Eu 3+ ions at 614 nm, while the energy transfer from the oxygen defect emissions is most probably due to the energy transfer from ZnO-nc to the new defects created due to the incorporation of the Eu 3+ ions.

  6. Spectral diffusion of quasi localized excitons in single silicon nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Martin, Joerg; Cichos, Frank [Centre for nanostructured Materials and Analytics, Institute of Physics, Chemnitz University of Technology, Reichenhainer Street 70, 09107 Chemnitz (Germany); Borczyskowski, Christian von, E-mail: Borczyskowski@physik.tu-chemnitz.de [Centre for nanostructured Materials and Analytics, Institute of Physics, Chemnitz University of Technology, Reichenhainer Street 70, 09107 Chemnitz (Germany)

    2012-08-15

    Evolution in time of photoluminescence spectra of SiO{sub x} capped single silicon nanocrystals has been investigated by means of confocal optical spectroscopy at room temperature. Large spectral jumps between subsequent spectra of up to 40 meV have been detected leading to noticeable line broadening and variation in the electron-phonon coupling. Further, a correlation between emission energy and emission intensity has been found and discussed in terms of an intrinsic Stark effect. Anti-correlated variations of the electron-phonon coupling to Si and SiO{sub 2} phonons as a function of photoluminescence energy indicate that the nearly localized excition is to some extent coupled to phonons in the shell covering the silicon nanocrystal. However, coupling is reduced upon increasing Stark effect, while at the same time coupling to phonons of the Si core increases. - Highlights: Black-Right-Pointing-Pointer Single silicon nanocrystals are detected via confocal microscopy. Black-Right-Pointing-Pointer Photoluminescence energies fluctuate strongly in time. Black-Right-Pointing-Pointer Spectral fluctuation is described in the form of spectral diffusion. Black-Right-Pointing-Pointer Dynamic processes are strongly controlled by electron-phonon coupling.

  7. XPS studies of SiO2 surface layers formed by oxygen ion implantation into silicon

    International Nuclear Information System (INIS)

    Schulze, D.; Finster, J.

    1983-01-01

    SiO 2 surface layers of 160 nm thickness formed by 16 O + ion implantation into silicon are examined by X-ray photoelectron spectroscopy measurements into the depth after a step-by-step chemical etching. The chemical nature and the thickness of the transition layer were determined. The results of the XPS measurements show that the outer surface and the bulk of the layers formed by oxygen implantation and subsequent high temperature annealing consist of SiO 2 . There is no evidence for Si or SiO/sub x/ (0 2 and Si is similar to that of thin grown oxide layers. Only its thickness is somewhat larger than in thermal oxide

  8. Low Temperature Growth of In2O3and InN Nanocrystals on Si(111 via Chemical Vapour Deposition Based on the Sublimation of NH4Cl in In

    Directory of Open Access Journals (Sweden)

    Tsokkou Demetra

    2009-01-01

    Full Text Available Abstract Indium oxide (In2O3 nanocrystals (NCs have been obtained via atmospheric pressure, chemical vapour deposition (APCVD on Si(111 via the direct oxidation of In with Ar:10% O2at 1000 °C but also at temperatures as low as 500 °C by the sublimation of ammonium chloride (NH4Cl which is incorporated into the In under a gas flow of nitrogen (N2. Similarly InN NCs have also been obtained using sublimation of NH4Cl in a gas flow of NH3. During oxidation of In under a flow of O2the transfer of In into the gas stream is inhibited by the formation of In2O3around the In powder which breaks up only at high temperatures, i.e.T > 900 °C, thereby releasing In into the gas stream which can then react with O2leading to a high yield formation of isolated 500 nm In2O3octahedrons but also chains of these nanostructures. No such NCs were obtained by direct oxidation forT G < 900 °C. The incorporation of NH4Cl in the In leads to the sublimation of NH4Cl into NH3and HCl at around 338 °C which in turn produces an efficient dispersion and transfer of the whole In into the gas stream of N2where it reacts with HCl forming primarily InCl. The latter adsorbs onto the Si(111 where it reacts with H2O and O2leading to the formation of In2O3nanopyramids on Si(111. The rest of the InCl is carried downstream, where it solidifies at lower temperatures, and rapidly breaks down into metallic In upon exposure to H2O in the air. Upon carrying out the reaction of In with NH4Cl at 600 °C under NH3as opposed to N2, we obtain InN nanoparticles on Si(111 with an average diameter of 300 nm.

  9. Synthesis of nanocrystals in KNb(Ge,Si)O5 glasses and chemical etching of nanocrystallized glass fibers

    International Nuclear Information System (INIS)

    Enomoto, Itaru; Benino, Yasuhiko; Fujiwara, Takumi; Komatsu, Takayuki

    2006-01-01

    The nanocrystallization behavior of 25K 2 O-25Nb 2 O 5 -(50-x)GeO 2 -xSiO 2 glasses with x=0,25,and50 (i.e., KNb(Ge,Si)O 5 glasses) and the chemical etching behavior of transparent nanocrystallized glass fibers have been examined. All glasses show nanocrystallization, and the degree of transparency of the glasses studied depends on the heat treatment temperature. Transparent nanocrystallized glasses can be obtained if the glasses are heat treated at the first crystallization peak temperature. Transparent nanocrystallized glass fibers with a diameter of about 100μm in 25K 2 O-25Nb 2 O 5 -50GeO 2 are fabricated, and fibers with sharpened tips (e.g., the taper length is about 450μm and the tip angle is about 12 o ) are obtained using a meniscus chemical etching method, in which etching solutions of 10wt%-HF/hexane and 10M-NaOH/hexane are used. Although the tip (aperture size) has not a nanoscaled size, the present study suggests that KNb(Ge,Si)O 5 nanocrystallized glass fibers have a potential for new near-field optical fiber probes with high refractive indices of around n=1.8 and high dielectric constants of around ε=58 (1kHz, room temperature)

  10. Ion implantation into amorphous Si layers to form carrier-selective contacts for Si solar cells

    International Nuclear Information System (INIS)

    Feldmann, Frank; Mueller, Ralph; Reichel, Christian; Hermle, Martin

    2014-01-01

    This paper reports our findings on the boron and phosphorus doping of very thin amorphous silicon layers by low energy ion implantation. These doped layers are implemented into a so-called tunnel oxide passivated contact structure for Si solar cells. They act as carrier-selective contacts and, thereby, lead to a significant reduction of the cell's recombination current. In this paper we address the influence of ion energy and ion dose in conjunction with the obligatory high-temperature anneal needed for the realization of the passivation quality of the carrier-selective contacts. The good results on the phosphorus-doped (implied V oc = 725 mV) and boron-doped passivated contacts (iV oc = 694 mV) open a promising route to a simplified interdigitated back contact (IBC) solar cell featuring passivated contacts. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Progress on matrix SiC processing and properties for fully ceramic microencapsulated fuel form

    International Nuclear Information System (INIS)

    Terrani, K.A.; Kiggans, J.O.; Silva, C.M.; Shih, C.; Katoh, Y.; Snead, L.L.

    2015-01-01

    The consolidation mechanism and resulting properties of the silicon carbide (SiC) matrix of fully ceramic microencapsulated (FCM) fuel form are discussed. The matrix is produced via the nano-infiltration transient eutectic-forming (NITE) process. Coefficient of thermal expansion, thermal conductivity, and strength characteristics of this SiC matrix have been characterized in the unirradiated state. An ad hoc methodology for estimation of thermal conductivity of the neutron-irradiated NITE–SiC matrix is also provided to aid fuel performance modeling efforts specific to this concept. Finally, specific processing methods developed for production of an optimal and reliable fuel form using this process are summarized. These various sections collectively report the progress made to date on production of optimal FCM fuel form to enable its application in light water and advanced reactors

  12. Flash-lamp-crystallized polycrystalline silicon films with high hydrogen concentration formed from Cat-CVD a-Si films

    International Nuclear Information System (INIS)

    Ohdaira, Keisuke; Tomura, Naohito; Ishii, Shohei; Matsumura, Hideki

    2011-01-01

    We investigate residual forms of hydrogen (H) atoms such as bonding configuration in poly-crystalline silicon (poly-Si) films formed by the flash-lamp-induced crystallization of catalytic chemical vapor deposited (Cat-CVD) a-Si films. Raman spectroscopy reveals that at least part of H atoms in flash-lamp-crystallized (FLC) poly-Si films form Si-H 2 bonds as well as Si-H bonds with Si atoms even using Si-H-rich Cat-CVD a-Si films, which indicates the rearrangement of H atoms during crystallization. The peak desorption temperature during thermal desorption spectroscopy (TDS) is as high as 900 o C, similar to the reported value for bulk poly-Si.

  13. Memory characteristics of an MOS capacitor structure with double-layer semiconductor and metal heterogeneous nanocrystals

    International Nuclear Information System (INIS)

    Ni Henan; Wu Liangcai; Song Zhitang; Hui Chun

    2009-01-01

    An MOS (metal oxide semiconductor) capacitor structure with double-layer heterogeneous nanocrystals consisting of semiconductor and metal embedded in a gate oxide for nonvolatile memory applications has been fabricated and characterized. By combining vacuum electron-beam co-evaporated Si nanocrystals and self-assembled Ni nanocrystals in a SiO 2 matrix, an MOS capacitor with double-layer heterogeneous nanocrystals can have larger charge storage capacity and improved retention characteristics compared to one with single-layer nanocrystals. The upper metal nanocrystals as an additional charge trap layer enable the direct tunneling mechanism to enhance the flat voltage shift and prolong the retention time. (semiconductor devices)

  14. Assembling a Lasing Hybrid Material With Supramolecular Polymers and Nanocrystals

    National Research Council Canada - National Science Library

    Li, Leiming

    2003-01-01

    .... In the system containing ZnO nanocrystals as the inorganic component, both phases are oriented in the hybrid material forming an ultraviolet lasing medium with a lower threshold relative to pure ZnO nanocrystals.

  15. Copper diffusion in Ti-Si-N layers formed by inductively coupled plasma implantation

    International Nuclear Information System (INIS)

    Ee, Y.C.; Chen, Z.; Law, S.B.; Xu, S.; Yakovlev, N.L.; Lai, M.Y.

    2006-01-01

    Ternary Ti-Si-N refractory barrier films of 15 nm thick was prepared by low frequency, high density, inductively coupled plasma implantation of N into Ti x Si y substrate. This leads to the formation of Ti-N and Si-N compounds in the ternary film. Diffusion of copper in the barrier layer after annealing treatment at various temperatures was investigated using time-of-flight secondary ion mass spectrometer (ToF-SIMS) depth profiling, X-ray diffractometer (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray (EDX) and sheet resistance measurement. The current study found that barrier failure did not occur until 650 deg. C annealing for 30 min. The failure occurs by the diffusion of copper into the Ti-Si-N film to form Cu-Ti and Cu-N compounds. FESEM surface morphology and EDX show that copper compounds were formed on the ridge areas of the Ti-Si-N film. The sheet resistance verifies the diffusion of Cu into the Ti-Si-N film; there is a sudden drop in the resistance with Cu compound formation. This finding provides a simple and effective method of monitoring Cu diffusion in TiN-based diffusion barriers

  16. Glass forming ability of Al–Ni–La alloys with Si addition

    Energy Technology Data Exchange (ETDEWEB)

    Yi, J.J.; Xiong, X.Z. [State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Inoue, A. [State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); WPI-Advanced Institute for Material Research, Tohoku University, Sendai 980-8577 (Japan); Kong, L.T. [State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Li, J.F., E-mail: jfli@sjtu.edu.cn [State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China)

    2015-11-25

    (Al{sub 85.5}Ni{sub 9.5}La{sub 5}){sub 100−x}Si{sub x}, (Al{sub 86}Ni{sub 9}La{sub 5}){sub 100−x}Si{sub x}, (Al{sub 86}Ni{sub 9.5}La{sub 4.5}){sub 100−x}Si{sub x}, (Al{sub 86}Ni{sub 10}La{sub 4}){sub 100−x}Si{sub x} and (Al{sub 86}Ni{sub 10.5}La{sub 3.5}){sub 100−x}Si{sub x} alloys, where x = 0.0, 0.2, 0.5, 1.0, 1.5 and 2.0, were cast under the same suction casting conditions into a wedge-shaped copper mold for investigating the effect of Si addition on the glass-forming ability (GFA). The GFA of the Al–Ni–La base alloys, except for the optimal glass former (Al{sub 85.5}Ni{sub 9.5}La{sub 5}), is enhanced when a proper content of Si is added. The largest content of Si up to which GFA can be enhanced changes in the following order of the base alloys: Al{sub 86}Ni{sub 9}La{sub 5}, Al{sub 86}Ni{sub 9.5}La{sub 4.5}, Al{sub 86}Ni{sub 10}La{sub 4} and Al{sub 86}Ni{sub 10.5}La{sub 3.5}. The enhancement of GFA due to Si addition becomes more significant as the La content decreases. This is presumably because more free Al atoms are present in the base alloy. - Highlights: • 0.2–2.0 at. % Si was added to each ternary base alloy. • Wedge-shaped samples were suction cast to obtain the glass-forming ability (GFA). • The GFA of the ternary non-optimal glass formers can be enhanced by Si addition. • The number of free-Al atoms dominates the best Si addition.

  17. Glass forming ability of Al–Ni–La alloys with Si addition

    International Nuclear Information System (INIS)

    Yi, J.J.; Xiong, X.Z.; Inoue, A.; Kong, L.T.; Li, J.F.

    2015-01-01

    (Al_8_5_._5Ni_9_._5La_5)_1_0_0_−_xSi_x, (Al_8_6Ni_9La_5)_1_0_0_−_xSi_x, (Al_8_6Ni_9_._5La_4_._5)_1_0_0_−_xSi_x, (Al_8_6Ni_1_0La_4)_1_0_0_−_xSi_x and (Al_8_6Ni_1_0_._5La_3_._5)_1_0_0_−_xSi_x alloys, where x = 0.0, 0.2, 0.5, 1.0, 1.5 and 2.0, were cast under the same suction casting conditions into a wedge-shaped copper mold for investigating the effect of Si addition on the glass-forming ability (GFA). The GFA of the Al–Ni–La base alloys, except for the optimal glass former (Al_8_5_._5Ni_9_._5La_5), is enhanced when a proper content of Si is added. The largest content of Si up to which GFA can be enhanced changes in the following order of the base alloys: Al_8_6Ni_9La_5, Al_8_6Ni_9_._5La_4_._5, Al_8_6Ni_1_0La_4 and Al_8_6Ni_1_0_._5La_3_._5. The enhancement of GFA due to Si addition becomes more significant as the La content decreases. This is presumably because more free Al atoms are present in the base alloy. - Highlights: • 0.2–2.0 at. % Si was added to each ternary base alloy. • Wedge-shaped samples were suction cast to obtain the glass-forming ability (GFA). • The GFA of the ternary non-optimal glass formers can be enhanced by Si addition. • The number of free-Al atoms dominates the best Si addition.

  18. Formation, structure, and phonon confinement effect of nanocrystalline Si1-xGex in SiO2-Si-Ge cosputtered films

    International Nuclear Information System (INIS)

    Yang, Y.M.; Wu, X.L.; Siu, G.G.; Huang, G.S.; Shen, J.C.; Hu, D.S.

    2004-01-01

    Using magnetron cosputtering of SiO 2 , Ge, and Si targets, Si-based SiO 2 :Ge:Si films were fabricated for exploring the influence of Si target proportion (P Si ) and annealing temperature (Ta) on formation, local structure, and phonon properties of nanocrystalline Si 1-x Ge x (nc-Si 1-x Ge x ). At low P Si and Ta higher than 800 deg. C, no nc-Si 1-x Ge x but a kind of composite nanocrystal consisting of a Ge core, GeSi shell, and amorphous Si outer shell is formed in the SiO 2 matrix. At moderate P Si , nc-Si 1-x Ge x begins to be formed at Ta=800 deg. C and coexists with nc-Ge at Ta=1100 deg. C. At high P Si , it was disclosed that both optical phonon frequency and lattice spacing of nc-Si 1-x Ge x increase with raising Ta. The possible origin of this phenomenon is discussed by considering three factors, the phonon confinement, strain effect, and composition variation of nc-Si 1-x Ge x . This work will be helpful in understanding the growth process of ternary GeSiO films and beneficial to further investigations on optical properties of nc-Ge 1-x Si x in the ternary matrix

  19. Strained interface defects in silicon nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Benjamin G.; Stradins, Paul [National Center for Photovoltaics, National Renewable Energy Laboratory, Golden, CO (United States); Hiller, Daniel; Zacharias, Margit [IMTEK - Faculty of Engineering, Albert-Ludwigs-University Freiburg (Germany); Luo, Jun-Wei; Beard, Matthew C. [Chemical and Materials Science, National Renewable Energy Laboratory, Golden, CO (United States); Semonin, Octavi E. [Chemical and Materials Science, National Renewable Energy Laboratory, Golden, CO (United States); Department of Physics, University of Colorado, Boulder, CO (United States)

    2012-08-07

    The surface of silicon nanocrystals embedded in an oxide matrix can contain numerous interface defects. These defects strongly affect the nanocrystals' photoluminescence efficiency and optical absorption. Dangling-bond defects are nearly eliminated by H{sub 2} passivation, thus decreasing absorption below the quantum-confined bandgap and enhancing PL efficiency by an order of magnitude. However, there remain numerous other defects seen in absorption by photothermal deflection spectroscopy; these defects cause non-radiative recombination that limits the PL efficiency to <15%. Using atomistic pseudopotential simulations, we attribute these defects to two specific types of distorted bonds: Si-Si and bridging Si-O-Si bonds between two Si atoms at the nanocrystal surface. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Charge transport in a CoPt3 nanocrystal microwire

    International Nuclear Information System (INIS)

    Beecher, P.; De Marzi, G.; Quinn, A.J.; Redmond, G.; Shevchenko, E.V.; Weller, H.

    2004-01-01

    The electrical characteristics of single CoPt 3 nanocrystal microwires formed by magnetic field-directed growth from colloidal solutions are presented. The wires comprise disordered assemblies of discrete nanocrystals, separated from each other by protective organic ligand shells. Electrical data indicate that the activated charge transport properties of the wires are determined by the nanocrystal charging energy, governed by the size and capacitance of the individual nanocrystals. Focused ion beam-assisted deposition of Pt metal at the wire-electrode junctions is employed to optimize the wire-electrode contacts, whilst maintaining the nanocrystal-dominated transport characteristics of these one-dimensional nanocrystal structures

  1. Composite material including nanocrystals and methods of making

    Science.gov (United States)

    Bawendi, Moungi G.; Sundar, Vikram C.

    2010-04-06

    Temperature-sensing compositions can include an inorganic material, such as a semiconductor nanocrystal. The nanocrystal can be a dependable and accurate indicator of temperature. The intensity of emission of the nanocrystal varies with temperature and can be highly sensitive to surface temperature. The nanocrystals can be processed with a binder to form a matrix, which can be varied by altering the chemical nature of the surface of the nanocrystal. A nanocrystal with a compatibilizing outer layer can be incorporated into a coating formulation and retain its temperature sensitive emissive properties.

  2. Chemical crosslinking of acrylic acid to form biocompatible pH sensitive hydrogel reinforced with cellulose nanocrystals (CNC)

    International Nuclear Information System (INIS)

    Lim, Lim Sze; Ahmad, Ishak; Lazim, Mohd Azwani Shah Mat; Amin, Mohd. Cairul Iqbal Mohd

    2014-01-01

    The purpose of this study is to produce a novel pH and temperature sensitive hydrogel, composed of poly(acrylic acid) (PAA) and cellulose nanocrystal (CNC). CNC was extracted from kenaf fiber through a series of alkali and bleaching treatments followed by acid hydrolysis. The PAA was then subjected to chemical cross-linking using the cross-linking agent (N,N-methylenebisacrylamide) with CNC entrapped in PAA matrix. The mixture was casted onto petri dish to obtain disc shape hydrogel. The effects of reaction conditions such as the ratio of PAA and CNC on the swelling behavior of the hydrogel obtained towards pH and temperature were studied. The obtained hydrogel was further subjected to different tests such swelling test for swelling behaviour at different pH and temperature along with scanning electron microscopy (SEM) for morphology analysis. The hydrogel obtained showed excellent pH sensitivity and obtained maximum swelling at pH 7. Besides that, hydrogel obtained showed significant increase in swelling ratio when temperature of swelling medium was increased from 25°C to 37°C. SEM micrograph showed that the pore size of the hydrogel decreases with increase of CNC content proving that the hydrogel structure became more rigid with addition of CNC. The PAA/CNC hydrogel with such excellent sensitivity towards pH and temperature can be developed further as drug carrier

  3. Chemical crosslinking of acrylic acid to form biocompatible pH sensitive hydrogel reinforced with cellulose nanocrystals (CNC)

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Lim Sze; Ahmad, Ishak; Lazim, Mohd Azwani Shah Mat [Faculty of Science and Technology, University Kebangsaan Malaysia, 43600 UKM, Bangi, Selangor (Malaysia); Amin, Mohd. Cairul Iqbal Mohd [Faculty of Pharmacy, University Kebangsaan Malaysia, Jalan Raja Muda Abdul Aziz, 50300 Kuala Lumpur (Malaysia)

    2014-09-03

    The purpose of this study is to produce a novel pH and temperature sensitive hydrogel, composed of poly(acrylic acid) (PAA) and cellulose nanocrystal (CNC). CNC was extracted from kenaf fiber through a series of alkali and bleaching treatments followed by acid hydrolysis. The PAA was then subjected to chemical cross-linking using the cross-linking agent (N,N-methylenebisacrylamide) with CNC entrapped in PAA matrix. The mixture was casted onto petri dish to obtain disc shape hydrogel. The effects of reaction conditions such as the ratio of PAA and CNC on the swelling behavior of the hydrogel obtained towards pH and temperature were studied. The obtained hydrogel was further subjected to different tests such swelling test for swelling behaviour at different pH and temperature along with scanning electron microscopy (SEM) for morphology analysis. The hydrogel obtained showed excellent pH sensitivity and obtained maximum swelling at pH 7. Besides that, hydrogel obtained showed significant increase in swelling ratio when temperature of swelling medium was increased from 25°C to 37°C. SEM micrograph showed that the pore size of the hydrogel decreases with increase of CNC content proving that the hydrogel structure became more rigid with addition of CNC. The PAA/CNC hydrogel with such excellent sensitivity towards pH and temperature can be developed further as drug carrier.

  4. Self organized formation of Ge nanocrystals in multilayers

    OpenAIRE

    Zschintzsch-Dias, Manuel

    2012-01-01

    The aim of this work is to create a process which allows the tailored growth of Ge nanocrystals for use in photovoltic applications. The multilayer systems used here provide a reliable method to control the Ge nanocrystal size after phase separation. In this thesis, the deposition of GeOx/SiO2 and Ge:SiOx~ 2/SiO2 multilayers via reactive dc magnetron sputtering and the self-ordered Ge nanocrystal formation within the GeOx and Ge:SiOx~ 2 sublayers during subsequent annealing is investigated...

  5. Sequential coating upconversion NaYF{sub 4}:Yb,Tm nanocrystals with SiO{sub 2} and ZnO layers for NIR-driven photocatalytic and antibacterial applications

    Energy Technology Data Exchange (ETDEWEB)

    Tou, Meijie; Luo, Zhenguo; Bai, Song; Liu, Fangying; Chai, Qunxia; Li, Sheng; Li, Zhengquan, E-mail: zqli@zjnu.edu.cn

    2017-01-01

    ZnO is one of the most promising materials for both photocatalytic and antibacterial applications, but its wide bandgap requires the excitation of UV light which limits their applications under visible and NIR bands. Herein, we demonstrate a facile approach to synthesize core-shell-shell hybrid nanoparticles consisting of hexagonal NaYF{sub 4}:Yb,Tm, amorphous SiO{sub 2} and wurtzite ZnO. The upconversion nanocrystals are used as the core seeds and sequentially coated with an insulting shell and a semiconductor layer. Such hybrid nanoparticles can efficiently utilize the NIR light through the upconverting process, and display notable photocatalytic performance and antibacterial activity under NIR irradiation. The developed NaYF{sub 4}:Yb,Tm@SiO{sub 2}@ZnO nanoparticles are characterized with TEM, XRD, EDS, XPS and PL spectra, and their working mechanism is also elucidated. - Highlights: • Core-shell NaYF{sub 4}:Yb,Tm@SiO{sub 2}@TiO{sub 2} NPs were synthesized via a sequential coating method. • Hybrid NaYF{sub 4}:Yb,Tm@SiO{sub 2}@TiO{sub 2} NPs show NIR-light enhanced photocatalytic activity. • NIR-driven antibacterial performance has been realized with NaYF{sub 4}:Yb,Tm@SiO{sub 2}@TiO{sub 2} NPs. • Working mechanism of the hybrid photocatalysts as antibacterial agents was proposed.

  6. Designing new biocompatible glass-forming Ti75-x Zr10 Nbx Si15 (x = 0, 15) alloys: corrosion, passivity, and apatite formation.

    Science.gov (United States)

    Abdi, Somayeh; Oswald, Steffen; Gostin, Petre Flaviu; Helth, Arne; Sort, Jordi; Baró, Maria Dolors; Calin, Mariana; Schultz, Ludwig; Eckert, Jürgen; Gebert, Annett

    2016-01-01

    Glass-forming Ti-based alloys are considered as potential new materials for implant applications. Ti75 Zr10 Si15 and Ti60 Zr10 Nb15 Si15 alloys (free of cytotoxic elements) can be produced as melt-spun ribbons with glassy matrix and embedded single β-type nanocrystals. The corrosion and passivation behavior of these alloys in their homogenized melt-spun states have been investigated in Ringer solution at 37°C in comparison to their cast multiphase crystalline counterparts and to cp-Ti and β-type Ti-40Nb. All tested materials showed very low corrosion rates as expressed in corrosion current densities icorr  alloys passive states in a wide potential range. This corresponds to low passive current densities ipass  = 2 ± 1 µA/cm(2) based on the growth of oxide films with thickness d alloys is beneficial for stable surface passivity. The addition of Nb does not only improve the glass-forming ability and the mechanical properties but also supports a high pitting resistance even at extreme anodic polarization up to 4V versus SCE were oxide thickness values of d ∼35 nm are reached. With regard to the corrosion properties, the Nb-containing nearly single-phase glassy alloy can compete with the β-type Ti-40Nb alloy. SBF tests confirmed the ability for formation of hydroxyapatite on the melt-spun alloy surfaces. All these properties recommend the new glass-forming alloys for application as wear- and corrosion-resistant coating materials for implants. © 2015 Wiley Periodicals, Inc.

  7. Optimizing colloidal nanocrystals for applications

    International Nuclear Information System (INIS)

    Sytnyk, M.

    2015-01-01

    +, which results in an enhancement of the magnetocrystalline anisotropy. As a result the complex ferri-magnetic properties of the nanocrystals become detectable at room temperature, whereas they were greatly restricted to cryogenic temperatures before the cation exchange. The improvements achieved by the cation exchange widens the applicability of the iron-oxide nanocrystals for spin based magneto-electronics applications. A related post synthetic treatment to the iron exchange is the galvanic exchange, applied in chapter 3 to transform Sn nanocrystals into Ag-Sn intermetallic alloys. These alloys are of high interest for catalytic applications and batteries. The special case of Sn nanocrystals appeared to be highly interesting due to the metal/metal-oxide core/shell nature of these nanocrystals. The naturally formed SnO2 shell, which spontaneously forms as soon the nanocrystals are exposed to air, plays a decisive role in the galvanic exchange process. While it appears to be permeable for Ag ions, enabling the desired galvanic transformation of the nanocrystal core to an AgSn alloy, it effectively protects the nanocrystals core from other metals, including nobel metals. These processes were evidenced in this work in detail by in-situ experiments, performed by synchrotron X-ray diffraction and proven by transmission electron microscopy. That the ion exchange can be used also for direct synthesis of chalcogenide semiconductor nanocrystals is shown in chapter 4. In this case the cation exchange reaction has been used for the in-situ synthesis of highly reactive metal precursors, which subsequently react with chalcogenides to form 2-4 nm small nanocrystals. Encouraging results were obtained for silver chalcogenides, representing 'green' alternatives to the commonly used infrared nanocrystals based on semiconductors containing toxic elements such as Pb and Hg. In this chapter only my own contribution to the work is described, namely the synthesis strategy, because further

  8. Synthesis and Doping of Silicon Nanocrystals for Versatile Nanocrystal Inks

    Science.gov (United States)

    Kramer, Nicolaas Johannes

    The impact of nanotechnology on our society is getting larger every year. Electronics are becoming smaller and more powerful, the "Internet of Things" is all around us, and data generation is increasing exponentially. None of this would have been possible without the developments in nanotechnology. Crystalline semiconductor nanoparticles (nanocrystals) are one of the latest developments in the field of nanotechnology. This thesis addresses three important challenges for the transition of silicon nanocrystals from the lab bench to the marketplace: A better understanding of the nanocrystal synthesis was obtained, the electronic properties of the nanocrystals were characterized and tuned, and novel silicon nanocrystal inks were formed and applied using simple coating technologies. Plasma synthesis of nanocrystals has numerous advantages over traditional solution-based synthesis methods. While the formation of nanoparticles in low pressure nonthermal plasmas is well known, the heating mechanism leading to their crystallization is poorly understood. A combination of comprehensive plasma characterization with a nanoparticle heating model presented here reveals the underlying plasma physics leading to crystallization. The model predicts that the nanoparticles reach temperatures as high as 900 K in the plasma as a result of heating reactions on the nanoparticle surface. These temperatures are well above the gas temperature and sufficient for complete nanoparticle crystallization. Moving the field of plasma nanoparticle synthesis to atmospheric pressures is important for lowering its cost and making the process attractive for industrial applications. The heating and charging model for silicon nanoparticles was adapted in Chapter 3 to study plasmas maintained over a wide range of pressures (10 -- 105 Pa). The model considers three collisionality regimes and determines the dominant contribution of each regime under various plasma conditions. Strong nanoparticle cooling at

  9. Size characterisation of noble-metal nano-crystals formed in sapphire by ion irradiation and subsequent thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Mota-Santiago, Pablo-Ernesto [Instituto de Fisica, Universidad Nacional Autonoma de Mexico A.P. 20-364 01000 Mexico D.F. (Mexico); Crespo-Sosa, Alejandro, E-mail: crespo@fisica.unam.mx [Instituto de Fisica, Universidad Nacional Autonoma de Mexico A.P. 20-364 01000 Mexico D.F. (Mexico); Jimenez-Hernandez, Jose-Luis; Silva-Pereyra, Hector-Gabriel; Reyes-Esqueda, Jorge-Alejandro; Oliver, Alicia [Instituto de Fisica, Universidad Nacional Autonoma de Mexico A.P. 20-364 01000 Mexico D.F. (Mexico)

    2012-10-15

    Highlights: Black-Right-Pointing-Pointer Systematic study on the formation of Ag and Au nano-particles in Al{sub 2}O{sub 3}. Black-Right-Pointing-Pointer Annealing in a reducing atmosphere, below the metal melting point is more suitable. Black-Right-Pointing-Pointer Au nano-particles grow up to 15 nm and Ag nano-particles up to 45 nm in radius. Black-Right-Pointing-Pointer Ostwald ripening is the mechanism responsible for the formation of large nanoparticles. Black-Right-Pointing-Pointer Optical properties of metallic nano-particles in Al{sub 2}O{sub 3} can be related to their size. - Abstract: Metallic nano-particles embedded in transparent dielectrics are very important for new technological applications because of their unique optical properties. These properties depend strongly on the size and shape of the nano-particles. In order to achieve the synthesis of metallic nano-particles it has been used the technique of ion implantation. This is a very common technique because it allows the control of the depth and concentration of the metallic ions inside the sample, limited mostly by straggling, without introducing other contaminant agents. The purpose of this work was to measure the size of the nano-particles grown under different conditions in Sapphire and its size evolution during the growth process. To achieve this goal, {alpha}-Al{sub 2}O{sub 3} single crystals were implanted with Ag or Au ions at room temperature with different fluences (from 2 Multiplication-Sign 10{sup 16} ions/cm{sup 2} to 8 Multiplication-Sign 10{sup 16} ions/cm{sup 2}). Afterwards, the samples were annealed at different temperatures (from 600 Degree-Sign C to 1100 Degree-Sign C) in oxidising, reducing, Ar or N{sub 2} atmospheres. We measured the ion depth profile by Rutherford Backscattering Spectroscopy (RBS) and the nano-crystals size distribution by using two methods, the surface plasmon resonance in the optical extinction spectrum and the Transmission Electron Microscopy (TEM).

  10. Structure Map for Embedded Binary Alloy Nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, C.W.; Shin, S.J.; Liao, C.Y.; Guzman, J.; Stone, P.R.; Watanabe, M.; Ager III, J.W.; Haller, E.E.; Chrzan, D.C.

    2008-09-20

    The equilibrium structure of embedded nanocrystals formed from strongly segregating binary-alloys is considered within a simple thermodynamic model. The model identifies two dimensionlessinterface energies that dictate the structure, and allows prediction of the stable structure for anychoice of these parameters. The resulting structure map includes three distinct nanocrystal mor-phologies: core/shell, lobe/lobe, and completely separated spheres.

  11. XPS studies of SiO/sub 2/ surface layers formed by oxygen ion implantation into silicon

    Energy Technology Data Exchange (ETDEWEB)

    Schulze, D.; Finster, J. (Karl-Marx-Universitaet, Leipzig (German Democratic Republic). Sektion Chemie); Hensel, E.; Skorupa, W.; Kreissig, U. (Zentralinstitut fuer Kernforschung, Rossendorf bei Dresden (German Democratic Republic))

    1983-03-16

    SiO/sub 2/ surface layers of 160 nm thickness formed by /sup 16/O/sup +/ ion implantation into silicon are examined by X-ray photoelectron spectroscopy measurements into the depth after a step-by-step chemical etching. The chemical nature and the thickness of the transition layer were determined. The results of the XPS measurements show that the outer surface and the bulk of the layers formed by oxygen implantation and subsequent high temperature annealing consist of SiO/sub 2/. There is no evidence for Si or SiO/sub x/ (0SiO/sub x/ transition region between SiO/sub 2/ and Si is similar to that of thin grown oxide layers. Only its thickness is somewhat larger than in thermal oxide.

  12. Plasma spray formed near-net-shape MoSi2-Si3N4 bulk nanocomposites-structure property evaluation

    International Nuclear Information System (INIS)

    Hong, S.J.; Viswanathan, V.; Rea, K.; Patil, S.; Deshpande, S.; Georgieva, P.; McKechnie, T.; Seal, S.

    2005-01-01

    This article, for the first time, presents the challenges toward the successful consolidation of near-net-shape bulk MoSi 2 -Si 3 N 4 -SiC nanocomposite using plasma spray forming. A detailed characterization of the spray formed bulk nanocomponent has been performed using optical microscopy (OM), scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM), and Vickers hardness testing. Vickers hardness (900 Hv) and fracture toughness (∼>5 MPa m 1/2 ) of the nanocomposite showed a little deviation from the expected, which might be due to the difference in the particle (Si 3 N 4 ) size and their distribution in the MoSi 2 matrix as a function of component thickness. Relatively higher hardness is attributed to the retention of the nanostructure in the composite. In addition, the as fabricated bulk nanocomposite showed enhanced oxidation resistance

  13. Electroluminescence properties of Si MOS structures with incorporation of FeSi2 precipitates formed by iron implantation

    International Nuclear Information System (INIS)

    Chow, C.F.; Wong, S.P.; Gao, Y.; Ke, N.; Li, Q.; Cheung, W.Y.; Lourenco, M.A.; Homewood, K.P.

    2005-01-01

    Silicon MOS structures with FeSi 2 precipitates embedded in the MOS active region have been fabricated and the electroluminescence (EL) properties from these FeSi 2 -Si MOS structures were measured as a function of temperature from 80 K to 300 K. Clear EL signals were observed even at room temperature for samples prepared at appropriate processing conditions. The EL spectra consist of two peaks, one attributed to FeSi 2 and the other attributed to Si band edge emission. While the intensity of the FeSi 2 peak showed the usual thermal quenching behavior, the Si band edge emission showed the opposite trend with its intensity increased with increasing temperature. Details of the line shapes and their temperature dependence are analyzed and discussed

  14. Characterization of the crystalline quality of β-SiC formed by ion beam synthesis

    International Nuclear Information System (INIS)

    Intarasiri, S.; Hallen, A.; Kamwanna, T.; Yu, L.D.; Possnert, G.; Singkarat, S.

    2006-01-01

    The ion beam synthesis (IBS) technique is applied to form crystalline silicon carbide (SiC) for future optoelectronics applications. Carbon ions at 80 and 40 keV were implanted into (1 0 0) high-purity p-type silicon wafers at room temperature and 400 deg. C, respectively, to doses in excess of 10 17 ions/cm 2 . Subsequent thermal annealing of the implanted samples was performed in a vacuum furnace at temperatures of 800, 900 and 1000 deg. C, respectively. Elastic recoil detection analysis was used to investigate depth distributions of the implanted ions and infrared transmittance (IR) measurement was used to characterize formation of SiC in the implanted Si substrate. Complementary to IR, Raman scattering measurements were also carried out. Levels of the residual damage distribution of the samples annealed at different temperatures were compared with that of the as-implanted one by Rutherford backscattering spectrometry (RBS) in the channeling mode. The results show that C-ion implantation at the elevated temperature, followed by high-temperature annealing, enhances the synthesis of crystalline SiC

  15. Carbon nanotube growth from catalytic nano-clusters formed by hot-ion-implantation into the SiO{sub 2}/Si interface

    Energy Technology Data Exchange (ETDEWEB)

    Hoshino, Yasushi, E-mail: yhoshino@kanagawa-u.ac.jp [Department of Information Sciences, Kanagawa University, 2946 Tsuchiya, Hiratsuka, Kanagawa 259-1293 (Japan); Arima, Hiroki; Yokoyama, Ai; Saito, Yasunao; Nakata, Jyoji [Department of Information Sciences, Kanagawa University, 2946 Tsuchiya, Hiratsuka, Kanagawa 259-1293 (Japan)

    2012-07-01

    We have studied growth of chirality-controlled carbon nanotubes (CNTs) from hot-implantation-formed catalytic nano-clusters in a thermally grown SiO{sub 2}/Si substrate. This procedure has the advantage of high controllability of the diameter and the number of clusters by optimizing the conditions of the ion implantation. In the present study, Co{sup +} ions with ion dose of 8 Multiplication-Sign 10{sup 16} cm{sup -2} are implanted in the vicinity of the SiO{sub 2}/Si interface at 300 Degree-Sign C temperature. The implanted Co atoms located in the SiO{sub 2} layer has an amorphous-like structure with a cluster diameter of several nm. In contrast, implanted Co atoms in the Si substrate are found to take a cobalt silicide structure, confirmed by the high-resolution image of transmission electron microscope. CNTs are grown by microwave-plasma-enhanced chemical vapor deposition. We have confirmed a large amount of vertically-aligned multi-walled CNTs from the Co nano-clusters formed by the hot-ion-implantation near the SiO{sub 2}/Si interface.

  16. Microstructure of buried CoSi2 layers formed by high-dose Co implantation into (100) and (111) Si substrates

    International Nuclear Information System (INIS)

    Bulle-Lieuwma, C.W.T.; Van Ommen, A.H.; Vandenhoudt, D.E.W.; Ottenheim, J.J.M.; de Jong, A.F.

    1991-01-01

    Heteroepitaxial Si/CoSi 2 /Si structures have been synthesized by implanting 170-keV Co + with doses in the range 1--3x10 17 Co + ions/cm 2 into (100) and (111) Si substrates and subsequent annealing. The microstructure of both the as-implanted and annealed structures is investigated in great detail by transmission electron microscopy, high-resolution electron microscopy, and x-ray diffraction. In the as-implanted samples, the Co is present as CoSi 2 precipitates, occurring both in aligned (A-type) and twinned (B-type) orientation. For the highest dose, a continuous layer of stoichiometric CoSi 2 is already formed during implantation. It is found that the formation of a connected layer, already during implantation, is crucial for the formation of a buried CoSi 2 layer upon subsequent annealing. Particular attention is given to the coordination of the interfacial Co atoms at the Si/CoSi 2 (111) interfaces of both types of precipitates. We find that the interfacial Co atoms at the A-type interfaces are fully sevenfold coordinated, whereas at the B-type interfaces they appear to be eightfold coordinated

  17. Preparation of NiFe binary alloy nanocrystals for nonvolatile memory applications

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    In this work,an idea which applies binary alloy nanocrystal floating gate to nonvolatile memory application was introduced.The relationship between binary alloy’s work function and its composition was discussed theoretically.A nanocrystal floating gate structure with NiFe nanocrystals embedded in SiO2 dielectric layers was fabricated by magnetron sputtering.The micro-structure and composition deviation of the prepared NiFe nanocrystals were also investigated by TEM and EDS.

  18. Amorphous Ge quantum dots embedded in SiO2 formed by low energy ion implantation

    International Nuclear Information System (INIS)

    Zhao, J. P.; Huang, D. X.; Jacobson, A. J.; Chen, Z. Y.; Makarenkov, B.; Chu, W. K.; Bahrim, B.; Rabalais, J. W.

    2008-01-01

    Under ultrahigh vacuum conditions, extremely small Ge nanodots embedded in SiO 2 , i.e., Ge-SiO 2 quantum dot composites, have been formed by ion implantation of 74 Ge + isotope into (0001) Z-cut quartz at a low kinetic energy of 9 keV using varying implantation temperatures. Transmission electron microscopy (TEM) images and micro-Raman scattering show that amorphous Ge nanodots are formed at all temperatures. The formation of amorphous Ge nanodots is different from reported crystalline Ge nanodot formation by high energy ion implantation followed by a necessary high temperature annealing process. At room temperature, a confined spatial distribution of the amorphous Ge nanodots can be obtained. Ge inward diffusion was found to be significantly enhanced by a synergetic effect of high implantation temperature and preferential sputtering of surface oxygen, which induced a much wider and deeper Ge nanodot distribution at elevated implantation temperature. The bimodal size distribution that is often observed in high energy implantation was not observed in the present study. Cross-sectional TEM observation and the depth profile of Ge atoms in SiO 2 obtained from x-ray photoelectron spectra revealed a critical Ge concentration for observable amorphous nanodot formation. The mechanism of formation of amorphous Ge nanodots and the change in spatial distribution with implantation temperature are discussed

  19. Investigation into CdS nanocrystal growth regularities in silicate glass and in the thin films SiO{sub 2} at the initial stages of solid solution phase decomposi8tion; Issledovanie zakonomernostej rosta nanokristalov CdS v silikatnom stekle i v tonkikh plenkakh SiO{sub 2} na nachal`nykh stadiyakh fazovogo raspada tverdogo rastvora

    Energy Technology Data Exchange (ETDEWEB)

    Gurevich, S A; Ekimov, A I; Kudryavtsev, I A [AN SSSR, Leningrad (Russian Federation). Fiziko-Tekhnicheskij Inst.

    1994-05-01

    Regularities of CdS semiconductor hanocrystal growth in amorphous media (silicate glasses and SiO{sub 2} thin films) are investigated. Dependences of crystal mean dimension on the annealing time show that in accordance with the theory of phase decomposition the crystal growth has the successive stages of nuclei formation and diffusion growth. By means of the nuclei mean radius dependences on the annealing temperature are determined the temperatures of CdS solubility in the matrix material. Effect of the annealing atmosphere composition on the growth and optical properties of CdS nanocrystals is shown.

  20. Hydrothermal synthesis of tungsten doped tin dioxide nanocrystals

    Science.gov (United States)

    Zhou, Cailong; Li, Yufeng; Chen, Yiwen; Lin, Jing

    2018-01-01

    Tungsten doped tin dioxide (WTO) nanocrystals were synthesized through a one-step hydrothermal method. The structure, composition and morphology of WTO nanocrystals were characterized by x-ray diffraction, x-ray photoelectron spectroscopy, energy dispersive x-ray spectroscopy, UV-vis diffuse reflectance spectra, zeta potential analysis and high-resolution transmission electron microscopy. Results show that the as-prepared WTO nanocrystals were rutile-type structure with the size near 13 nm. Compared with the undoped tin dioxide nanocrystals, the WTO nanocrystals possessed better dispersity in ethanol phase and formed transparent sol.

  1. Influence of Substrate on Crystal Orientation of Large-Grained Si Thin Films Formed by Metal-Induced Crystallization

    Directory of Open Access Journals (Sweden)

    Kaoru Toko

    2015-01-01

    Full Text Available Producing large-grained polycrystalline Si (poly-Si film on glass substrates coated with conducting layers is essential for fabricating Si thin-film solar cells with high efficiency and low cost. We investigated how the choice of conducting underlayer affected the poly-Si layer formed on it by low-temperature (500°C Al-induced crystallization (AIC. The crystal orientation of the resulting poly-Si layer strongly depended on the underlayer material: (100 was preferred for Al-doped-ZnO (AZO and indium-tin-oxide (ITO; (111 was preferred for TiN. This result suggests Si heterogeneously nucleated on the underlayer. The average grain size of the poly-Si layer reached nearly 20 µm for the AZO and ITO samples and no less than 60 µm for the TiN sample. Thus, properly electing the underlayer material is essential in AIC and allows large-grained Si films to be formed at low temperatures with a set crystal orientation. These highly oriented Si layers with large grains appear promising for use as seed layers for Si light-absorption layers as well as for advanced functional materials.

  2. Optical properties of Ag nanoclusters formed by irradiation and annealing of SiO{sub 2}/SiO{sub 2}:Ag thin films

    Energy Technology Data Exchange (ETDEWEB)

    Güner, S., E-mail: sguner@fatih.edu.tr [Department of Physics, Fatih University, 34500 Büyükçekmece, İstanbul (Turkey); Budak, S. [Department of Electrical Engineering and Computer Science, Alabama A and M University, Huntsville, AL 35810 (United States); Gibson, B. [Department of Physics, UAH, Huntsville, AL 35899 (United States); Ila, D. [Department of Chemistry and Physics, Fayetteville St. University, Fayetteville, NC 28301 (United States)

    2014-08-15

    Highlights: • Fabrication of films through the Reactive Electron Beam deposition technique. • Perfect and reproducible Ag nanoclustered host matrix. • Potential technological applicability in thermoelectric devices. - Abstract: We have deposited five periodic SiO{sub 2}/SiO{sub 2} + Ag multi-nano-layered films on fused silica substrates using physical vapor deposition technique. The co-deposited SiO{sub 2}:Ag layers were 2.7–5 nm and SiO{sub 2} buffer layers were 1–15 nm thick. Total thickness was between 30 and 105 nm. Different concentrations of Ag, ranging from 1.5 to 50 molecular% with respect to SiO{sub 2} were deposited to determine relevant rates of nanocluster formation and occurrence of interaction between nanoclusters. Using interferometry as well as in situ thickness monitoring, we measured the thickness of the layers. The concentration of Ag in SiO{sub 2} was measured with Rutherford Backscattering Spectrometry (RBS). To nucleate Ag nanoclusters, 5 MeV cross plane Si ion bombardments were performed with fluence varying between 5 × 10{sup 14} and 1 × 10{sup 16} ions/cm{sup 2} values. Optical absorption spectra were recorded in the range of 200–900 nm in order to monitor the Ag nanocluster formation in the thin films. Thermal annealing treatment at different temperatures was applied as second method to form varying size of nanoclusters. The physical properties of formed super lattice were criticized for thermoelectric applications.

  3. Intensely emitting CdTe nanocrystals retained initial photoluminescence efficiency in sol-gel derived Si{sub 1-x}Zr{sub x}O{sub 2} glass

    Energy Technology Data Exchange (ETDEWEB)

    Yang, P.; Murase, N. [National Institute of Advanced Industrial Science and Technology, Photonics Research Institute, Osaka (Japan)

    2007-10-15

    Emitting CdTe nanocrystals (NCs) were embedded in pure glass matrices (Si{sub 1-x}Zr{sub x}O{sub 2}, x{<=}0.15) using a controlled sol-gel method, where the pre-hydrolyzed condition, the molar ratio of Zr/Si, the gelation time, the pH, and the amount of alcohol were judiciously optimized considering the surface condition of the NCs and the mechanism of the glass formation. As a result, the prepared glass phosphor exhibited high photoluminescence efficiencies (40% for green and 60% for red when Zr/Si was 5-10%) by retaining their initial values as in CdTe colloidal solution. To our knowledge, these values are the highest among those ever obtained for any solid matrices containing NCs. Because of the existence of Zr, the prepared glasses exhibit much better resistance against the ambient atmosphere, heat-treatment, and boiling water compared with pure silica glass (x=0) or the glass prepared from our other methods using a silane coupling agent. Thus, the obtained glass is promising for applications such as optical devices. (orig.)

  4. Oriented Attachment Is a Major Control Mechanism To Form Nail-like Mn-Doped ZnO Nanocrystals.

    Science.gov (United States)

    Patterson, Samuel; Arora, Priyanka; Price, Paige; Dittmar, Jasper W; Das, Vijay Kumar; Pink, Maren; Stein, Barry; Morgan, David Gene; Losovyj, Yaroslav; Koczkur, Kallum M; Skrabalak, Sara E; Bronstein, Lyudmila M

    2017-12-26

    Here, we present a controlled synthesis of Mn-doped ZnO nanoparticles (NPs) with predominantly nail-like shapes, whose formation occurs via tip-to-base-oriented attachment of initially formed nanopyramids, followed by leveling of sharp edges that lead to smooth single-crystalline "nails". This shape is prevalent in noncoordinating solvents such as octadecene and octadecane. Yet, the double bond in the former promotes oriented attachment. By contrast, Mn-doped ZnO NP synthesis in a weakly coordinating solvent, benzyl ether, results in dendritic structures because of random attachment of initial NPs. Mn-doped ZnO NPs possess a hexagonal wurtzite structure, and in the majority of cases, the NP surface is enriched with Mn, indicating a migration of Mn 2+ ions to the NP surface during the NP formation. When the NP formation is carried out without the addition of octadecyl alcohol, which serves as a surfactant and a reaction initiator, large, concave pyramid dimers are formed whose attachment takes place via basal planes. UV-vis and photoluminescence spectra of these NPs confirm the utility of controlling the NP shape to tune electro-optical properties.

  5. Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Normand, P. E-mail: p.normand@imel.demokritos.gr; Beltsios, K.; Kapetanakis, E.; Tsoukalas, D.; Travlos, T.; Stoemenos, J.; Berg, J. van den; Zhang, S.; Vieu, C.; Launois, H.; Gautier, J.; Jourdan, F.; Palun, L

    2001-05-01

    The structure evolution of annealed low-energy Si- or Ge-implanted thin and thick SiO{sub 2} layers is studied. The majority of Si (or Ge) species is restricted within a 3-4 nm thick layer. Si is able to separate and crystallize more easily than Ge. The glass transition temperature of the as-implanted structure has a significant effect on the progress of phase transformations accompanying annealing.

  6. Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films

    International Nuclear Information System (INIS)

    Normand, P.; Beltsios, K.; Kapetanakis, E.; Tsoukalas, D.; Travlos, T.; Stoemenos, J.; Berg, J. van den; Zhang, S.; Vieu, C.; Launois, H.; Gautier, J.; Jourdan, F.; Palun, L.

    2001-01-01

    The structure evolution of annealed low-energy Si- or Ge-implanted thin and thick SiO 2 layers is studied. The majority of Si (or Ge) species is restricted within a 3-4 nm thick layer. Si is able to separate and crystallize more easily than Ge. The glass transition temperature of the as-implanted structure has a significant effect on the progress of phase transformations accompanying annealing

  7. RBS-study of GexSi1-x Compounds Formed by Variable Dose Ge Implantation into Si Wafers

    Directory of Open Access Journals (Sweden)

    Ramírez A.

    2002-01-01

    Full Text Available Amorphous and relaxed epitaxial GeSi films are prepared by Ge-implantation into Si(111 wafers of both 60 keV and 200 keV energetic Ge+-ions with appropriate dose, followed by post-implantation thermal annealing, comprising a single final annealing at a temperature of 900 °C. The implantation dose was varied between 10(14 and 10(17 atoms cm-2. Rutherford backscattering (RBS and channeling analysis was applied in order to explore the formation of a single crystalline Si-Ge compound layer, both prior and after the thermal treatment. The depth and the thickness of the implanted layer, as well as their molar composition and crystalline quality was determined, and it was found that a single crystalline Si-Ge alloy layer was created, with both depth and mole fraction depending on the ion energy and the ion dose.

  8. Light-emitting Si nanostructures formed by swift heavy ions in stoichiometric SiO2 layers

    Science.gov (United States)

    Kachurin, G. A.; Cherkova, S. G.; Marin, D. V.; Kesler, V. G.; Volodin, V. A.; Skuratov, V. A.

    2012-07-01

    Three hundred and twenty nanometer-thick SiO2 layers were thermally grown on the Si substrates. The layers were irradiated with 167 MeV Xe ions to the fluences ranging between 1012 cm-2 and 1014 cm-2, or with 700 MeV Bi ions in the fluence range of 3 × 1012-1 × 1013 cm-2. After irradiation the yellow-orange photoluminescence (PL) band appeared and grew with the ion fluences. In parallel optical absorption in the region of 950-1150 cm-1, Raman scattering and X-ray photoelectron spectroscopy evidenced a decrease in the number of Si-O bonds and an increase in the number of Si-coordinated atoms. The results obtained are interpreted as the formation of the light-emitting Si-enriched nanostructures inside the tracks of swift heavy ions through the disproportionation of SiO2. Ionization losses of the ions are regarded as responsible for the processes observed. Difference between the dependences of the PL intensity on the fluences of Xe and Bi ions are ascribed to their different stopping energy, therewith the diameters of the tracks of Xe and Bi ions were assessed as <3 nm and ˜10 nm, respectively. The observed shift of the PL bands, induced by Xe and Bi ions, agrees with the predictions of the quantum confinement theory.

  9. Light-emitting Si nanostructures formed by swift heavy ions in stoichiometric SiO{sub 2} layers

    Energy Technology Data Exchange (ETDEWEB)

    Kachurin, G.A., E-mail: kachurin@isp.nsc.ru [A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk (Russian Federation); Cherkova, S.G. [A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk (Russian Federation); Marin, D.V. [A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk (Russian Federation); Novosibirsk State University, 630090 Novosibirsk (Russian Federation); Kesler, V.G. [A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk (Russian Federation); Volodin, V.A. [A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk (Russian Federation); Novosibirsk State University, 630090 Novosibirsk (Russian Federation); Skuratov, V.A. [Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation)

    2012-07-01

    Three hundred and twenty nanometer-thick SiO{sub 2} layers were thermally grown on the Si substrates. The layers were irradiated with 167 MeV Xe ions to the fluences ranging between 10{sup 12} cm{sup -2} and 10{sup 14} cm{sup -2}, or with 700 MeV Bi ions in the fluence range of 3 Multiplication-Sign 10{sup 12}-1 Multiplication-Sign 10{sup 13} cm{sup -2}. After irradiation the yellow-orange photoluminescence (PL) band appeared and grew with the ion fluences. In parallel optical absorption in the region of 950-1150 cm{sup -1}, Raman scattering and X-ray photoelectron spectroscopy evidenced a decrease in the number of Si-O bonds and an increase in the number of Si-coordinated atoms. The results obtained are interpreted as the formation of the light-emitting Si-enriched nanostructures inside the tracks of swift heavy ions through the disproportionation of SiO{sub 2}. Ionization losses of the ions are regarded as responsible for the processes observed. Difference between the dependences of the PL intensity on the fluences of Xe and Bi ions are ascribed to their different stopping energy, therewith the diameters of the tracks of Xe and Bi ions were assessed as <3 nm and {approx}10 nm, respectively. The observed shift of the PL bands, induced by Xe and Bi ions, agrees with the predictions of the quantum confinement theory.

  10. Investigation of the atomic interface structure of mesotaxial Si/CoSi2(100) layers formed by high-dose implantation

    International Nuclear Information System (INIS)

    Bulle-Lieuwma, C.W.T.; Jong, A.F. de; Vandenhoudt, D.E.W.

    1991-01-01

    Aligned mesotaxial films of CoSi 2 in monocrystalline (100) oriented Si substrates have been formed by high-dose ion implantation of Co, followed by a high temperature treatment. The atomic structures of both the lower and upper Si/CoSi 2 (100) interfaces of the buried CoSi 2 layer have been investigated by high-resolution electron microscopy (HREM) combined with image simulations. A domain-like structure is observed consisting of areas with different interfaces. In order to derive the atomic configuration, image simulations of different proposed models are presented. By comparing simulated images and HREM images, two different atomic structure models for the Si/CoSi 2 (100) interface have been found. In the first model the interfacial Co atoms are six-fold coordinated and the tetrahedral coordination and bond lengths of silicon atoms are everywhere maintained. In the second model we found evidence for a 2 x 1 interface reconstruction, involving a difference in composition. The interfacial Co atoms are seven-fold coordinated. It is shown that the boundaries between the domains are associated with interfacial dislocations of edge-type with Burgers vectors b a/4 inclined and b = a/2 parallel to the interfacial plane. (author)

  11. Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing

    Czech Academy of Sciences Publication Activity Database

    Krivyakin, G.K.; Volodin, V.; Kochubei, S.A.; Kamaev, G.N.; Purkrt, Adam; Remeš, Zdeněk; Fajgar, Radek; Stuchlíková, The-Ha; Stuchlík, Jiří

    2016-01-01

    Roč. 50, č. 7 (2016), s. 935-940 ISSN 1063-7826 R&D Projects: GA MŠk LH12236 Institutional support: RVO:68378271 ; RVO:67985858 Keywords : hydrogenated amorphous silicon * nanocrystals * laser annealing Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.602, year: 2016

  12. Light-emitting Si nanostructures formed by swift heavy ions in stoichiometric SiO2 layers

    International Nuclear Information System (INIS)

    Kachurin, G.A.; Cherkova, S.G.; Marin, D.V.; Kesler, V.G.; Volodin, V.A.; Skuratov, V.A.

    2012-01-01

    Three hundred and twenty nanometer-thick SiO 2 layers were thermally grown on the Si substrates. The layers were irradiated with 167 MeV Xe ions to the fluences ranging between 10 12 cm −2 and 10 14 cm −2 , or with 700 MeV Bi ions in the fluence range of 3 × 10 12 –1 × 10 13 cm −2 . After irradiation the yellow–orange photoluminescence (PL) band appeared and grew with the ion fluences. In parallel optical absorption in the region of 950–1150 cm −1 , Raman scattering and X-ray photoelectron spectroscopy evidenced a decrease in the number of Si–O bonds and an increase in the number of Si-coordinated atoms. The results obtained are interpreted as the formation of the light-emitting Si-enriched nanostructures inside the tracks of swift heavy ions through the disproportionation of SiO 2 . Ionization losses of the ions are regarded as responsible for the processes observed. Difference between the dependences of the PL intensity on the fluences of Xe and Bi ions are ascribed to their different stopping energy, therewith the diameters of the tracks of Xe and Bi ions were assessed as <3 nm and ∼10 nm, respectively. The observed shift of the PL bands, induced by Xe and Bi ions, agrees with the predictions of the quantum confinement theory.

  13. Development Considerations for Nanocrystal Drug Products.

    Science.gov (United States)

    Chen, Mei-Ling; John, Mathew; Lee, Sau L; Tyner, Katherine M

    2017-05-01

    Nanocrystal technology has emerged as a valuable tool for facilitating the delivery of poorly water-soluble active pharmaceutical ingredients (APIs) and enhancing API bioavailability. To date, the US Food and Drug Administration (FDA) has received over 80 applications for drug products containing nanocrystals. These products can be delivered by different routes of administration and are used in a variety of therapeutic areas. To aid in identifying key developmental considerations for these products, a retrospective analysis was performed on the submissions received by the FDA to date. Over 60% of the submissions were for the oral route of administration. Based on the Biopharmaceutics Classification System (BCS), most nanocrystal drugs submitted to the FDA are class II compounds that possess low aqueous solubility and high intestinal permeability. Impact of food on drug bioavailability was reduced for most nanocrystal formulations as compared with their micronized counterparts. For all routes of administration, dose proportionality was observed for some, but not all, nanocrystal products. Particular emphasis in the development of nanocrystal products was placed on the in-process tests and controls at critical manufacturing steps (such as milling process), mitigation and control of process-related impurities, and the stability of APIs or polymorphic form (s) during manufacturing and upon storage. This emphasis resulted in identifying challenges to the development of these products including accurate determination of particle size (distribution) of drug substance and/or nanocrystal colloidal dispersion, identification of polymorphic form (s), and establishment of drug substance/product specifications.

  14. Nanocrystal quantum dots

    CERN Document Server

    Klimov, Victor I

    2010-01-01

    ""Soft"" Chemical Synthesis and Manipulation of Semiconductor Nanocrystals, J.A. Hollingsworth and V.I. Klimov Electronic Structure in Semiconductor Nanocrystals: Optical Experiment, D.J. NorrisFine Structure and Polarization Properties of Band-Edge Excitons in Semiconductor Nanocrystals, A.L. EfrosIntraband Spectroscopy and Dynamics of Colloidal Semiconductor Quantum Dots, P. Guyot-Sionnest, M. Shim, and C. WangMultiexciton Phenomena in Semiconductor Nanocrystals, V.I. KlimovOptical Dynamics in Single Semiconductor Quantum Do

  15. Solid-state 27Al and 29Si NMR characterization of hydrates formed in calcium aluminate-silica fume mixtures

    International Nuclear Information System (INIS)

    Pena, P.; Rivas Mercury, J.M.; Aza, A.H. de; Turrillas, X.; Sobrados, I.; Sanz, J.

    2008-01-01

    Partially deuterated Ca 3 Al 2 (SiO 4 ) y (OH) 12-4y -Al(OH) 3 mixtures, prepared by hydration of Ca 3 Al 2 O 6 (C 3 A), Ca 12 Al 14 O 33 (C 12 A 7 ) and CaAl 2 O 4 (CA) phases in the presence of silica fume, have been characterized by 29 Si and 27 Al magic-angle spinning-nuclear magnetic resonance (MAS-NMR) spectroscopies. NMR spectroscopy was used to characterize anhydrous and fully hydrated samples. In hydrated compounds, Ca 3 Al 2 (OH) 12 and Al(OH) 3 phases were detected. From the quantitative analysis of 27 Al NMR signals, the Al(OH) 3 /Ca 3 Al 2 (OH) 12 ratio was deduced. The incorporation of Si into the katoite structure, Ca 3 Al 2 (SiO 4 ) 3-x (OH) 4x , was followed by 27 Al and 29 Si NMR spectroscopies. Si/OH ratios were determined from the quantitative analysis of 27 Al MAS-NMR components associated with Al(OH) 6 and Al(OSi)(OH) 5 environments. The 29 Si NMR spectroscopy was also used to quantify the unreacted silica and amorphous calcium aluminosilicate hydrates formed, C-S-H and C-A-S-H for short. From 29 Si NMR spectra, the amount of Si incorporated into different phases was estimated. Si and Al concentrations, deduced by NMR, transmission electron microscopy, energy dispersive spectrometry, and Rietveld analysis of both X-ray and neutron data, indicate that only a part of available Si is incorporated in katoite structures. - Graphical abstract: Transmission electron micrograph of CaAl 2 O 4 -microsilica mixture hydrated at 90 deg. C for 31 days showing a cubic Ca 3 Al 2.0±0.2 (SiO 4 ) 0.9±0.2 (OH) 1.8 crystal surrounded by unreacted amorphous silica spheres

  16. Photoluminescence of hydrophilic silicon nanocrystals in aqueous solutions

    International Nuclear Information System (INIS)

    Prtljaga, Nikola; D'Amato, Elvira; Pitanti, Alessandro; Guider, Romain; Froner, Elena; Larcheri, Silvia; Scarpa, Marina; Pavesi, Lorenzo

    2011-01-01

    Stable aqueous solutions of undecylenic-acid-grafted silicon nanocrystals (Si-nc) were prepared. The time evolution of the photoluminescence properties of these hydrophilic silicon nanocrystals has been followed on different timescales (hours and days). On a short timescale (hours), Si-nc tend to agglomerate while the PL lineshape and intensity are stable. Agglomeration can be reduced by using suitable surfactants. On a long timescale (days), oxidation of Si-nc occurs even in the presence of surfactants. These two observations render Si-nc very useful as a labeling agent for biosensing.

  17. Photoluminescence of hydrophilic silicon nanocrystals in aqueous solutions

    Science.gov (United States)

    Prtljaga, Nikola; D'Amato, Elvira; Pitanti, Alessandro; Guider, Romain; Froner, Elena; Larcheri, Silvia; Scarpa, Marina; Pavesi, Lorenzo

    2011-05-01

    Stable aqueous solutions of undecylenic-acid-grafted silicon nanocrystals (Si-nc) were prepared. The time evolution of the photoluminescence properties of these hydrophilic silicon nanocrystals has been followed on different timescales (hours and days). On a short timescale (hours), Si-nc tend to agglomerate while the PL lineshape and intensity are stable. Agglomeration can be reduced by using suitable surfactants. On a long timescale (days), oxidation of Si-nc occurs even in the presence of surfactants. These two observations render Si-nc very useful as a labeling agent for biosensing.

  18. Photoluminescence of hydrophilic silicon nanocrystals in aqueous solutions

    Energy Technology Data Exchange (ETDEWEB)

    Prtljaga, Nikola; D' Amato, Elvira; Pitanti, Alessandro; Guider, Romain; Froner, Elena; Larcheri, Silvia; Scarpa, Marina; Pavesi, Lorenzo, E-mail: nikolap@science.unitn.it [Department of Physics, University of Trento, Via Sommarive 14, I-38123 Trento (Italy)

    2011-05-27

    Stable aqueous solutions of undecylenic-acid-grafted silicon nanocrystals (Si-nc) were prepared. The time evolution of the photoluminescence properties of these hydrophilic silicon nanocrystals has been followed on different timescales (hours and days). On a short timescale (hours), Si-nc tend to agglomerate while the PL lineshape and intensity are stable. Agglomeration can be reduced by using suitable surfactants. On a long timescale (days), oxidation of Si-nc occurs even in the presence of surfactants. These two observations render Si-nc very useful as a labeling agent for biosensing.

  19. Composition dependency of the glass forming ability (GFA) in Mg-Ni-Si system by mechanical alloying

    International Nuclear Information System (INIS)

    Xie Haowen; Lin Jianguo; Li Yuncang; Hodgson, Peter D.; Wen Cuie

    2007-01-01

    The pure elemental powder mixtures with the compositions of Mg 65 Ni x Si 35-x (x = 10, 20, 25, 33 at.%) were subject to high-energy ball mill, and the structures of the mixtures at different intervals of milling were characterised by X-ray diffraction (XRD). The compositional dependency of the glass forming ability (GFA) in Mg-Ni-Si system was evaluated based on the experimental results and the theoretical calculation. The compositional dependency of GFA in Mg-Ni-Si system can be understood well by comparing the enthalpies of the crystalline and amorphous phases based on the Miedema's theory for the formation enthalpy of alloys. Increasing the Ni/Mg ratio and/or decreasing Si content can improve the amorphous formability. The calculation results might be of great help in optimising the composition with high GFA in Mg-Ni-Si system

  20. Nanogrids and Beehive-Like Nanostructures Formed by Plasma Etching the Self-Organized SiGe Islands

    Science.gov (United States)

    Chang, Yuan-Ming; Jian, Sheng-Rui; Juang, Jenh-Yih

    2010-09-01

    A lithography-free method for fabricating the nanogrids and quasi-beehive nanostructures on Si substrates is developed. It combines sequential treatments of thermal annealing with reactive ion etching (RIE) on SiGe thin films grown on (100)-Si substrates. The SiGe thin films deposited by ultrahigh vacuum chemical vapor deposition form self-assembled nanoislands via the strain-induced surface roughening (Asaro-Tiller-Grinfeld instability) during thermal annealing, which, in turn, serve as patterned sacrifice regions for subsequent RIE process carried out for fabricating nanogrids and beehive-like nanostructures on Si substrates. The scanning electron microscopy and atomic force microscopy observations confirmed that the resultant pattern of the obtained structures can be manipulated by tuning the treatment conditions, suggesting an interesting alternative route of producing self-organized nanostructures.

  1. Semisolid forming of 44MnSiV6 microalloyed steel

    Science.gov (United States)

    Plata, Gorka; Lozares, Jokin; Hurtado, Iñaki; Azpilgain, Zigor; Idoyaga, Zuriñe

    2018-05-01

    Globalisation is forcing many sectors to be more cost-effective due to the low manpower cost of developing countries. This, in combination with European trends of green production and reduction of emissions, enhances the necessity of advanced technologies to remain at the forefront of the market. It is precisely in this field where the Semisolid forming (SSF) exhibits a great potential. In Mondragon Unibertsitatea, it has been demonstrated the capability of producing sound components of 42CrMo4 and S48C steels by saving material, energy and attaining as hot forged properties. To make the process even more cost-effective, it has also been proved the capacity of SSF 44MnSiV6 microalloyed steel that enables the striking of the post processing heat treatment.

  2. Optical characterization of luminescent silicon nanocrystals embedded in glass matrices

    Energy Technology Data Exchange (ETDEWEB)

    Debieu, Olivier

    2008-12-16

    Interstellar dust in nebulae and in the Diffuse Interstellar Medium (DISM) of galaxies contains a component which exhibits efficient visible-near infrared luminescence ranging from 500 to 1000 nm, known as Extended Red Emission (ERE). Silicon nanocrystals (nc-Si) are discussed as possible carriers of the ERE. We employed the accelerator facilities of the Institute of Solid State Physics of the University of Jena to implant Si ions into fused silica windows. An excess concentration of silicon atoms is thus produced in the host SiO{sub 2} matrix which, by applying an annealing at 1100 C, condensates to silicon nanoparticles and crystallizes. Although the condensation and crystallization occur after an annealing of one minute,10, 15 the samples were annealed during one hour in order to well-passivate the nc-Si, that means, to reduce effectively the number of Si-dangling bonds at the nc-Si surface that are efficient non-radiative recombination centers. 10, 16 Upon excitation with UV light, most of our nc-Si/SiO{sub 2} samples revealed strong PL. We implanted into our luminescent nc-Si/SiO{sub 2} systems other atomic elements, as for instance magnesium and calcium, which form silicates if their oxide is combined with SiO{sub 2}. The purpose is to simulate the conditions for silicates containing nc-Si. In order to understand the effect of the incorporation of foreign atoms on the PL properties of our nc-Si/SiO{sub 2} systems, we proceeded to similar experiments with Er and Ge. As has been demonstrated by several authors, 17, 18 the presence of nc-Si in a glass matrix enhances considerably the emission of Er{sup 3+} ions at 1.536{mu}m. At the same time, the PL of nc-Si is considerably quenched. Since the solubility of Er in crystalline silicon is about 2 orders of magnitude lower than in SiO{sub 2}, the optically active Er{sup 3+} ions are believed to be localized outside the nc-Si core, demonstrating that ions present in the host SiO{sub 2} matrix influence the PL

  3. Influence of spray forming process parameters on the microstructure and porosity of Mg{sub 2}Si rich aluminum alloys

    Energy Technology Data Exchange (ETDEWEB)

    Stelling, O.; Hehl, A. von [Foundation Institute for Material Science, Bremen (Germany); Uhlenwinkel, V. [University of Bremen, FB4 FG01 Department Process and Chemcial Engineering, Bremen (Germany); Krug, P. [PEAK Werkstoff GmbH, Velbert (Germany); Ellendt, N.

    2010-07-15

    Due to high cooling rates spray forming is an appropriate process to produce aluminum alloys with a high content of Mg{sub 2}Si. Compared to common casting processes, a fine microstructure can be achieved yielding in improved mechanical properties. In this work, billets were spray formed from the two alloys AlMg15Si8Cu2 (22 mass-% Mg{sub 2}Si) and AlMg20.5Si11Cu2 (30 mass-% Mg{sub 2}Si) under different spraying conditions. The analysis of the microstructure showed that the size of Mg{sub 2}Si dispersoids is very sensitive to process parameters. Besides the well known thermal effects of melt superheat (carried out from -40 K to +170 K) and GMR (varied from 2.0 to 6.3) a strong influence of the scanning frequency of the atomizer nozzle (7 Hz and 15 Hz) could be observed. Similar effects could be found for the occurrence of porosity. A new parameter, the enthalpy flow to gas flow ratio (EGR), was defined from these two parameters of which correlations of Mg{sub 2}Si dispersoid size and amount of porosity were found. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  4. A radiation-tolerant, low-power non-volatile memory based on silicon nanocrystal quantum dots

    OpenAIRE

    Bell, L. D.; Boer, E.; Ostraat, M.; Brongersma, M. L.; Flagan, R. C.; Atwater, H. A.; De Blauwe, J.; Green, M. L.

    2001-01-01

    Nanocrystal nonvolatile floating-gate memories are a good candidate for space applications - initial results suggest they are fast, more reliable and consume less power than conventional floating gate memories. In the nanocrystal based NVM device, charge is not stored on a continuous polysilicon layer (so-called floating gate), but instead on a layer of discrete nanocrystals. Charge injection and storage in dense arrays of silicon nanocrystals in SiO_2 is a critical aspect of the performance ...

  5. Preparation of Si3N4 Form Diatomite via a Carbothermal Reduction-Nitridation Process

    Science.gov (United States)

    Ma, Bin; Huang, Zhaohui; Mei, Lefu; Fang, Minghao; Liu, Yangai; Wu, Xiaowen; Hu, Xiaozhi

    2016-05-01

    Si3N4 was produced using diatomite and sucrose as silicon and carbon sources, respectively. The effect of the C/SiO2 molar ratio, heating temperature and soaking time on the morphology and phase compositions of the final products was investigated by scanning electron microscopy, x-ray diffraction analysis and energy dispersive spectroscopy. The phase equilibrium relationships of the system at different heating temperatures were also investigated based on the thermodynamic analysis. The results indicate that the phase compositions depended on the C/SiO2 molar ratio, heating temperature and soaking time. Fabrication of Si3N4 from the precursor via carbothermal reduction nitridation was achieved at 1550°C for 1-8 h using a C/SiO2 molar ratio of 3.0. The as-prepared Si3N4 contained a low amount of Fe3Si (<1 wt.%).

  6. Highly aqueous soluble CaF2:Ce/Tb nanocrystals: effect of surface functionalization on structural, optical band gap, and photoluminescence properties.

    Science.gov (United States)

    Ansari, Anees A; Parchur, Abdul K; Kumar, Brijesh; Rai, S B

    2016-12-01

    The design of nanostructured materials with highly stable water-dispersion and luminescence efficiency is an important concern in nanotechnology and nanomedicine. In this paper, we described the synthesis and distinct surface modification on the morphological structure and optical (optical absorption, band gap energy, excitation, emission, decay time, etc.) properties of highly crystalline water-dispersible CaF 2 :Ce/Tb nanocrystals (core-nanocrystals). The epitaxial growth of inert CaF 2 and silica shell, respectively, on their surface forming as CaF 2 :Ce/Tb@CaF 2 (core/shell) and CaF 2 :Ce/Tb@CaF 2 @SiO 2 (core/shell/SiO 2 ) nanoarchitecture. X-ray diffraction and transmission electron microscope image shows that the nanocrystals were in irregular spherical phase, highly crystalline (~20 nm) with narrow size distribution. The core/shell nanocrystals confirm that the surface coating is responsible in the change of symmetrical nanostructure, which was determined from the band gap energy and luminescent properties. It was found that an inert inorganic shell formation effectively enhances the luminescence efficiency and silica shell makes the nanocrystals highly water-dispersible. In addition, Ce 3+ /Tb 3+ -co-doped CaF 2 nanocrystals show efficient energy transfer from Ce 3+ to Tb 3+ ion and strong green luminescence of Tb 3+ ion at 541 nm( 5 D 4 → 7 F 5 ). Luminescence decay curves of core and core/shell nanocrystals were fitted using mono and biexponential equations, and R 2 regression coefficient criteria were used to discriminate the goodness of the fitted model. The lifetime values for the core/shell nanocrystals are higher than core-nanocrystals. Considering the high stable water-dispersion and intensive luminescence emission in the visible region, these luminescent core/shell nanocrystals could be potential candidates for luminescent bio-imaging, optical bio-probe, displays, staining, and multianalyte optical sensing. A newly designed CaF 2 :Ce

  7. Light-emitting Si films formed by neutral cluster deposition in a thin O2 gas

    International Nuclear Information System (INIS)

    Honda, Y.; Takei, M.; Ohno, H.; Shida, S.; Goda, K.

    2005-01-01

    We have fabricated the light-emitting Si-rich and oxygen-rich amorphous SiO 2 (a-SiO 2 ) films using the neutral cluster deposition (NCD) method without and with oxygen gas admitted, respectively, and demonstrate for the first time that these films show a photoluminescent feature. The Si thin films were observed by atomic force microscopy and high-resolution transmission electron microscopy, and analyzed by means of X-ray photoelectron spectroscopy, photoluminescence (PL) and FTIR-attenuated total reflection measurements. All of the PL spectra show mountainous distribution with a peak around 620 nm. It is found that the increase in the oxygen termination in the a-SiO 2 films evidently makes the PL intensity increase. It is demonstrated that NCD technique is one of the hopeful methods to fabricate light-emitting Si thin films

  8. Structure and transformation of tactoids in cellulose nanocrystal suspensions

    Science.gov (United States)

    Wang, Pei-Xi; Hamad, Wadood Y.; MacLachlan, Mark J.

    2016-05-01

    Cellulose nanocrystals obtained from natural sources are of great interest for many applications. In water, cellulose nanocrystals form a liquid crystalline phase whose hierarchical structure is retained in solid films after drying. Although tactoids, one of the most primitive components of liquid crystals, are thought to have a significant role in the evolution of this phase, they have evaded structural study of their internal organization. Here we report the capture of cellulose nanocrystal tactoids in a polymer matrix. This method allows us to visualize, for the first time, the arrangement of cellulose nanocrystals within individual tactoids by electron microscopy. Furthermore, we can follow the structural evolution of the liquid crystalline phase from tactoids to iridescent-layered films. Our insights into the early nucleation events of cellulose nanocrystals give important information about the growth of cholesteric liquid crystalline phases, especially for cellulose nanocrystals, and are crucial for preparing photonics-quality films.

  9. Forming-free performance of a-SiN x :H-based resistive switching memory obtained by oxygen plasma treatment

    Science.gov (United States)

    Zhang, Xinxin; Ma, Zhongyuan; Zhang, Hui; Liu, Jian; Yang, Huafeng; Sun, Yang; Tan, Dinwen; Li, Wei; Xu, Ling; Chen, Kuiji; Feng, Duan

    2018-06-01

    An a-SiN x -based resistive random access memory (RRAM) device with a forming-free characteristic has significant potentials for the industrialization of the next-generation memories. We demonstrate that a forming-free a-SiN x O y RRAM device can be achieved by an oxygen plasma treatment of ultra-thin a-SiN x :H films. Electron spin resonance spectroscopy reveals that Si dangling bonds with a high density (1019 cm‑3) are distributed in the initial state, which exist in the forms of Si2N≡Si·, SiO2≡Si·, O3≡Si·, and N3≡Si·. X-ray photoelectron spectroscopy and temperature-dependent current analyses reveal that the silicon dangling bonds induced by the oxygen plasma treatment and external electric field contribute to the low resistance state (LRS). For the high resistance state (HRS), the rupture of the silicon dangling bond pathway is attributed to the partial passivation of Si dangling bonds by H+ and O2‑. Both LRS and HRS transmissions obey the hopping conduction model. The proposed oxygen plasma treatment, introduced to generate a high density of Si dangling bonds in the SiN x O y :H films, provides a new approach to forming-free RRAM devices.

  10. Strong composition-dependence on glass-forming ability in Ni-(Ti,Zr)-Si pseudo-ternary alloys

    International Nuclear Information System (INIS)

    Yang, H.; Wang, J.Q.; Li, Y.

    2006-01-01

    The glass formation in Ni-(Ti,Zr)-Si pseudo-ternary alloys was studied. For suction casting, by carefully adjusting the alloy composition and studying the microstructure changes, the best glass-forming alloy with a 2 mm diameter is pinpointed in a narrow composition region of 57.5-58.5 at.% Ni, 36.5-38.5 at.% (Ti + Zr) and 5-5.5 at.% Si. The main competing crystalline phases, identified by XRD and SEM, were Ni 10 (Zr,Ti) 7 , Ni(Ti,Zr) and an unidentified Si-containing phase. Our results indicate a clear need for monitoring the microstructure change in the cross section of the ingots to locate the best glass-forming alloys

  11. Evolution of microstructural defects with strain effects in germanium nanocrystals synthesized at different annealing temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Minghuan; Cai, Rongsheng; Zhang, Yujuan; Wang, Chao [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308, Ningxia Road, Qingdao 266071 (China); College of Chemistry and Chemical Engineering, Qingdao University, No. 308, Ningxia Road, Qingdao 266071 (China); Wang, Yiqian, E-mail: yqwang@qdu.edu.cn [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308, Ningxia Road, Qingdao 266071 (China); College of Physics Science, Qingdao University, No. 308, Ningxia Road, Qingdao 266071 (China); Ross, Guy G.; Barba, David [INRS-EMT, 1650 Boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2 (Canada)

    2014-07-01

    Ge nanocrystals (Ge-ncs) were produced by implantation of {sup 74}Ge{sup +} into a SiO{sub 2} film on (100) Si, followed by high-temperature annealing from 700 °C to 1100 °C. Transmission electron microscopy (TEM) studies show that the average size of Ge-ncs increases with the annealing temperature. High-resolution TEM (HRTEM) investigations reveal the presence of planar and linear defects in the formed Ge-ncs, whose relative concentrations are determined at each annealing temperature. The relative concentration of planar defects is almost independent of the annealing temperature up to 1000 °C. However, from 1000 °C to 1100 °C, its concentration decreases dramatically. For the linear defects, their concentration varies considerably with the annealing temperatures. In addition, by measuring the interplanar spacing of Ge-ncs from the HRTEM images, a strong correlation is found between the dislocation percentage and the stress field intensity. Our results provide fundamental insights regarding both the presence of microstructural defects and the origin of the residual stress field within Ge-ncs, which can shed light on the fabrication of Ge-ncs with quantified crystallinity and appropriate size for the advanced Ge-nc devices. - Highlights: • Growth of Ge nanocrystals at different annealing temperatures was investigated. • Strain field has great effects on the formation of dislocations. • Different mechanisms are proposed to explain growth regimes of Ge nanocrystals.

  12. Temperature-dependent photoluminescence from CdS/Si nanoheterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Song, Yue Li; Li, Yong; Ji, Peng Fei; Zhou, Feng Qun; Sun, Xiao Jun; Yuan, Shu Qing; Wan, Ming Li [Pingdingshan University, Department of Physics, Solar New Energy Research Center, Pingdingshan (China); Ling, Hong [North China University of Water Resources and Electric Power, Department of Mathematics and Information Science, Zhengzhou (China)

    2016-12-15

    CdS/Si nanoheterojunctions have been fabricated by growing nanocrystal CdS (nc-CdS) on the silicon nanoporous pillar array (Si-NPA) through using a chemical bath deposition method. The nanoheterojunctions have been constructed by three layers: the upper layer being a nc-CdS thin films, the intermediate layer being the interface region including nc-CdS and nanocrystal silicon (nc-Si), and the bottom layer being nc-Si layer grown on sc-Si substrate. The room temperature and temperature-dependent photoluminescence (PL) have been measured and analyzed to provide some useful information of defect states. Utilizing the Gauss-Newton fitting method, five emission peaks from the temperature-dependent PL spectra can be determined. From the high energy to low energy, these five peaks are ascribed to the some luminescence centers which are formed by the oxygen-related deficiency centers in the silicon oxide layer of Si-NPA, the band gap emission of nc-CdS, the transition from the interstitial cadmium (I{sub Cd}) to the valence band, the recombination from I{sub Cd} to cadmium vacancies (V{sub Cd}), and from sulfur vacancies (V{sub s}) to the valence band, respectively. Understanding of the defect states in the CdS/Si nanoheterojunctions is very meaningful for the performance of devices based on CdS/Si nanoheterojunctions. (orig.)

  13. Origin of blue photoluminescence from colloidal silicon nanocrystals fabricated by femtosecond laser ablation in solution.

    Science.gov (United States)

    Hao, H L; Wu, W S; Zhang, Y; Wu, L K; Shen, W Z

    2016-08-12

    We present a detailed investigation into the origin of blue emission from colloidal silicon (Si) nanocrystals (NCs) fabricated by femtosecond laser ablation of Si powder in 1-hexene. High resolution transmission electron microscopy and Raman spectroscopy observations confirm that Si NCs with average size 2.7 nm are produced and well dispersed in 1-hexene. Fourier transform infrared spectrum and x-ray photoelectron spectra have been employed to reveal the passivation of Si NCs surfaces with organic molecules. On the basis of the structural characterization, UV-visible absorption, temperature-dependent photoluminescence (PL), time-resolved PL, and PL excitation spectra investigations, we deduce that room-temperature blue luminescence from colloidal Si NCs originates from the following two processes: (i) under illumination, excitons first form within colloidal Si NCs by direct transition at the X or Γ (Γ25 → Γ'2) point; (ii) and then some trapped excitons migrate to the surfaces of colloidal Si NCs and further recombine via the surface states associated with the Si-C or Si-C-H2 bonds.

  14. A new Ti-Zr-Hf-Cu-Ni-Si-Sn bulk amorphous alloy with high glass-forming ability

    International Nuclear Information System (INIS)

    Huang, Y.J.; Shen, J.; Sun, J.F.; Yu, X.B.

    2007-01-01

    The effect of Sn substitution for Cu on the glass-forming ability was investigated in Ti 41.5 Zr 2.5 Hf 5 Cu 42.5-x Ni 7.5 Si 1 Sn x (x = 0, 1, 3, 5, 7) alloys by using differential scanning calorimetry (DSC) and X-ray diffractometry. The alloy containing 5% Sn shows the highest glass-forming ability (GFA) among the Ti-Zr-Hf-Cu-Ni-Si-Sn system. Fully amorphous rod sample with diameters up to 6 mm could be successfully fabricated by the copper mold casting Ti 41.5 Zr 2.5 Hf 5 Cu 37.5 Ni 7.5 Si 1 Sn 5 alloy. The activation energies for glass transition and crystallization for Ti 41.5 Zr 2.5 Hf 5 Cu 37.5 Ni 7.5 Si 1 Sn 5 amorphous alloy are both larger than those values for the Sn-free alloy. The enhancement in GFA and thermal stability after the partial replacement of Cu by Sn may be contributed to the strong atomic bonding nature between Ti and Sn and the increasing of atomic packing density. The amorphous Ti 41.5 Zr 2.5 Hf 5 Cu 37.5 Ni 7.5 Si 1 Sn 5 alloy also possesses superior mechanical properties

  15. Fabrication and thermophysical property characterization of UN/U3Si2 composite fuel forms

    Science.gov (United States)

    White, J. T.; Travis, A. W.; Dunwoody, J. T.; Nelson, A. T.

    2017-11-01

    High uranium density composite fuels composed of UN and U3Si2 have been fabricated using a liquid phase sintering route at temperatures between 1873 K and 1973 K and spanning compositions of 10 vol% to 40 vol% U3Si2. Microstructural analysis and phase characterization revealed the formation of an U-Si-N phase of unknown structure. Microcracking was observed in the U-Si portion of the composite microstructure that likely originates from the mismatched coefficient of thermal expansion between the UN and U3Si2 leading to stresses on heating and cooling of the composite. Thermal expansion coefficient, thermal diffusivity, and thermal conductivity were characterized for each of the compositions as a function of temperature to 1673 K. Hysteresis is observed in the thermal diffusivity for the 20 vol% through 40 vol% specimens between room temperature and 1273 K, which is attributed to the microcracking in the U-Si phase. Thermal conductivity of the composites was modeled using the MOOSE framework based on the collected microstructure data. The impact of irradiation on thermal conductivity was also simulated for this class of composite materials.

  16. Determination of optimum Si excess concentration in Er-doped Si-rich SiO2 for optical amplification at 1.54 μm

    International Nuclear Information System (INIS)

    Savchyn, Oleksandr; Coffey, Kevin R.; Kik, Pieter G.

    2010-01-01

    The presence of indirect Er 3+ excitation in Si-rich SiO 2 is demonstrated for Si-excess concentrations in the range of 2.5-37 at. %. The Si excess concentration providing the highest density of sensitized Er 3+ ions is demonstrated to be relatively insensitive to the presence of Si nanocrystals and is found to be ∼14.5 at. % for samples without Si nanocrystals (annealed at 600 deg. C) and ∼11.5 at. % for samples with Si nanocrystals (annealed at 1100 deg. C). The observed optimum is attributed to an increase in the density of Si-related sensitizers as the Si concentration is increased, with subsequent deactivation and removal of these sensitizers at high Si concentrations. The optimized Si excess concentration is predicted to generate maximum Er-related gain at 1.54 μm in devices based on Er-doped Si-rich SiO 2 .

  17. Liquidus Temperature of SrO-Al2O3-SiO2 Glass-Forming Compositions

    DEFF Research Database (Denmark)

    Abel, Brett M.; Morgan, James M.; Mauro, John C.

    2013-01-01

    . In the composition range of interest for industrial glasses, Tliq tends to decrease with increasing strontium-to-alumina ratio. We find that cristobalite, mullite, and slawsonite are the dominant devitrification phases for the compositions with high SiO2, SiO2+Al2O3, and SrO contents, respectively. By comparison...... with the phase diagrams for CaO-Al2O3-SiO2 and MgO-Al2O3-SiO2 systems, we have found that for the highest [RO]/[Al2O3] ratios, Tliq exhibits a minimum value for R = Ca. Based on the phase diagram established here, the composition of glass materials, for example, for liquid crystal display substrates, belonging...... to the SrO-Al2O3-SiO2 family may be designed with a more exact control of the glass-forming ability by avoiding the regions of high liquidus temperature....

  18. Mega-electron-volt ion beam induced anisotropic plasmon resonance of silver nanocrystals in glass

    NARCIS (Netherlands)

    Penninkhof, JJ; Polman, A; Sweatlock, LA; Maier, SA; Atwater, HA; Vredenberg, AM; Kooi, BJ; Sweatlock, Luke A.; Maier, Stefan A.

    2003-01-01

    30 MeV Si ion beam irradiation of silica glass containing Ag nanocrystals causes alignment of Ag nanocrystals in arrays along the ion tracks. Optical transmission measurements show a large splitting of the surface plasmon resonance bands for polarizations longitudinal and transversal to the arrays.

  19. Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Praveen; Tuteja, Mohit; Kesaria, Manoj; Waghmare, U. V.; Shivaprasad, S. M. [Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560 064 (India)

    2012-09-24

    We present here the spontaneous formation of catalyst-free, self-aligned crystalline (wurtzite) nanorods on Si(111) surfaces modified by surface nitridation. Nanorods grown by molecular beam epitaxy on bare Si(111) and non-stoichiometric silicon nitride interface are found to be single crystalline but disoriented. Those grown on single crystalline Si{sub 3}N{sub 4} intermediate layer are highly dense c-oriented hexagonal shaped nanorods. The morphology and the self-assembly of the nanorods shows an ordered epitaxial hexagonal superstructure, suggesting that they are nucleated at screw dislocations at the interface and grow spirally in the c-direction. The aligned nanorod assembly shows high-quality structural and optical emission properties.

  20. Scanning tunneling spectroscopy of CdSe nanocrystals covalently bound to GaAs

    DEFF Research Database (Denmark)

    Walzer, K.; Marx, E.; Greenham, N.C.

    2003-01-01

    We present scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) measurements of CdSe nanocrystals covalently attached to doped GaAs substrates using monolayers of 1,6-hexanedithiol. STM measurements showed the formation of stable, densely packed, homogeneous monolayers...... of nanocrystals. STS measurements showed rectifying behaviour, with high currents at the opposite sample bias to that previously observed for CdSe nanocrystals adsorbed on Si substrates. We explain the rectifying behaviour by considering the interaction between the electronic states of the nanocrystals...

  1. Thermo-mechanical Forming of Al¿Mg¿Si Alloys: Modeling and Experiments

    NARCIS (Netherlands)

    Kurukuri, S.; van den Boogaard, Antonius H.; Ghosh, M.; Miroux, A.; Barlat, F; Moon, Y.H.; Lee, M.G.

    2010-01-01

    In an ongoing quest to realize lighter vehicles with improved fuel efficiency, deformation characteristics of the material AA 6016 is investigated. In the first part of this study, material behavior of Al–Mg–Si sheet alloy is investigated under different process (temperature and strain rate) and

  2. Effect of Si addition on glass-forming ability and mechanical properties of Cu-Zr-Al bulk metallic glass

    International Nuclear Information System (INIS)

    Malekan, M.; Shabestari, S.G.; Zhang, W.; Seyedein, S.H.; Gholamipour, R.; Makino, A.; Inoue, A.

    2010-01-01

    Research highlights: The Cu 50 Zr 43 Al 7 alloy has a surprising GFA, and the glassy rods with diameter of 10 mm have been produced in this research. It has not been reported that the Cu-based glassy rods (Cu ≥ 50 at.%) to be produced with the critical diameter greater than 10 mm. The novelty of this research is that the glass formation has been improved and the critical diameter increased to 12 mm for the alloy having x = 1 with the addition of Si. Different criteria are used to evaluate the influence of Si content on the GFA, and the possible mechanisms involved in the achievement of this GFA are also discussed. - Abstract: The effect of Si addition on the glass-forming ability (GFA) and mechanical properties of (Cu 50 Zr 43 Al 7 ) 100-x Si x (x = 0, 0.5, 1, 1.5 and 2 at.%) alloys were investigated. The GFA of Cu 50 Zr 43 Al 7 alloy is improved by addition of a small amount of Si, and the critical diameter for glass formation increases from 10 mm for the alloy with x = 0-12 mm for the alloy with x = 1 when prepared using copper mold casting. Different criteria are used to evaluate the influence of Si content on the GFA, and the possible mechanisms involved in the achievement of this GFA are also discussed. In the uniaxial compression, the bulk glassy alloys exhibit a limited plastic strain of less than 1%, but the compressive fracture strength and Young's modulus were obtained in high values of 1969-2129 MPa and 101-144 GPa, respectively. Fracture surface and shear bands of samples were studied by using scanning electron microscopy (SEM).

  3. Nanocrystal Bioassembly: Asymmetry, Proximity, and Enzymatic Manipulation

    Energy Technology Data Exchange (ETDEWEB)

    Claridge, Shelley A. [Univ. of California, Berkeley, CA (United States)

    2008-05-01

    Research at the interface between biomolecules and inorganic nanocrystals has resulted in a great number of new discoveries. In part this arises from the synergistic duality of the system: biomolecules may act as self-assembly agents for organizing inorganic nanocrystals into functional materials; alternatively, nanocrystals may act as microscopic or spectroscopic labels for elucidating the behavior of complex biomolecular systems. However, success in either of these functions relies heavily uponthe ability to control the conjugation and assembly processes.In the work presented here, we first design a branched DNA scaffold which allows hybridization of DNA-nanocrystal monoconjugates to form discrete assemblies. Importantly, the asymmetry of the branched scaffold allows the formation of asymmetric2assemblies of nanocrystals. In the context of a self-assembled device, this can be considered a step toward the ability to engineer functionally distinct inputs and outputs.Next we develop an anion-exchange high performance liquid chromatography purification method which allows large gold nanocrystals attached to single strands of very short DNA to be purified. When two such complementary conjugates are hybridized, the large nanocrystals are brought into close proximity, allowing their plasmon resonances to couple. Such plasmon-coupled constructs are of interest both as optical interconnects for nanoscale devices and as `plasmon ruler? biomolecular probes.We then present an enzymatic ligation strategy for creating multi-nanoparticle building blocks for self-assembly. In constructing a nanoscale device, such a strategy would allow pre-assembly and purification of components; these constructs can also act as multi-label probes of single-stranded DNA conformational dynamics. Finally we demonstrate a simple proof-of-concept of a nanoparticle analog of the polymerase chain reaction.

  4. A new Ti-Zr-Hf-Cu-Ni-Si-Sn bulk amorphous alloy with high glass-forming ability

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Y.J. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Shen, J. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)]. E-mail: junshen@hit.edu.cn; Sun, J.F. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Yu, X.B. [Lab of Energy Science and Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)]. E-mail: yuxuebin@hotmail.com

    2007-01-16

    The effect of Sn substitution for Cu on the glass-forming ability was investigated in Ti{sub 41.5}Zr{sub 2.5}Hf{sub 5}Cu{sub 42.5-x}Ni{sub 7.5}Si{sub 1}Sn {sub x} (x = 0, 1, 3, 5, 7) alloys by using differential scanning calorimetry (DSC) and X-ray diffractometry. The alloy containing 5% Sn shows the highest glass-forming ability (GFA) among the Ti-Zr-Hf-Cu-Ni-Si-Sn system. Fully amorphous rod sample with diameters up to 6 mm could be successfully fabricated by the copper mold casting Ti{sub 41.5}Zr{sub 2.5}Hf{sub 5}Cu{sub 37.5}Ni{sub 7.5}Si{sub 1}Sn{sub 5} alloy. The activation energies for glass transition and crystallization for Ti{sub 41.5}Zr{sub 2.5}Hf{sub 5}Cu{sub 37.5}Ni{sub 7.5}Si{sub 1}Sn{sub 5} amorphous alloy are both larger than those values for the Sn-free alloy. The enhancement in GFA and thermal stability after the partial replacement of Cu by Sn may be contributed to the strong atomic bonding nature between Ti and Sn and the increasing of atomic packing density. The amorphous Ti{sub 41.5}Zr{sub 2.5}Hf{sub 5}Cu{sub 37.5}Ni{sub 7.5}Si{sub 1}Sn{sub 5} alloy also possesses superior mechanical properties.

  5. Isolating and moving single atoms using silicon nanocrystals

    Science.gov (United States)

    Carroll, Malcolm S.

    2010-09-07

    A method is disclosed for isolating single atoms of an atomic species of interest by locating the atoms within silicon nanocrystals. This can be done by implanting, on the average, a single atom of the atomic species of interest into each nanocrystal, and then measuring an electrical charge distribution on the nanocrystals with scanning capacitance microscopy (SCM) or electrostatic force microscopy (EFM) to identify and select those nanocrystals having exactly one atom of the atomic species of interest therein. The nanocrystals with the single atom of the atomic species of interest therein can be sorted and moved using an atomic force microscope (AFM) tip. The method is useful for forming nanoscale electronic and optical devices including quantum computers and single-photon light sources.

  6. Facile synthesis of water-soluble curcumin nanocrystals

    Directory of Open Access Journals (Sweden)

    Marković Zoran M.

    2015-01-01

    Full Text Available In this paper, facile synthesis of water soluble curcumin nanocrystals is reported. Solvent exchange method was applied to synthesize curcumin nanocrystals. Different techniques were used to characterize the structural and photophysical properties of curcumin nanocrystals. We found that nanocurcumin prepared by this method had good chemical and physical stability, could be stored in the powder form at room temperature, and was freely dispersible in water. It was established that the size of curcumin nanocrystals was varied in the range of 20-500 nm. Fourier transform infrared spectroscopy and UV-Vis analyses showed the presence of tetrahydrofuran inside the curcumin nanocrystals. Also, it was found that nanocurcumin emitted photoluminescencewith yellow-green colour. [Projekat Ministarstva nauke Republike Srbije, br. 172003

  7. Simultaneous control of nanocrystal size and nanocrystal ...

    Indian Academy of Sciences (India)

    applications such as a photo-sensor [11]. Thus, it is desirable to have, not only a control on the size of the nanocrystals, but also an independent tunability of the ... 1-thioglycerol) in 25 ml methanol under inert atmosphere. 10 ml of 0.2 M sodium sulfide solution is then added to the reaction mixture dropwise and the reaction.

  8. Electronic states in clusters of H forms of zeolites with variation of the Si/Al ratio

    International Nuclear Information System (INIS)

    Gun'ko, V.M.

    1987-01-01

    Fragments of H forms of zeolites of the faujasite type including up to 12 silicon- and aluminum-oxygen tetrahedrons and having different Si/Al ratios have been calculated in the cluster approximation by the MINDO/3 and CNDO/2 methods. The dependence of the integral and orbital densities of electronic states in the clusters on the aluminum content has been investigated. It has been shown that the profiles of the s- and p-orbital density of states of Al remain practically unchanged as the Si/Al ratio is lowered and that the maxima of the orbital density of states of Si broaden, and new maxima appear at the bottom and top of the valence band. When the acidity of the structural OH groups is lowered, the maxima of the orbital density of states of the H atoms are displaced appreciably only in the deep valence band, while in the upper valence band the positions of the peaks of the s-orbital density of states of the H atoms remain constant. Satisfactory agreement of the calculated orbital densities of states of Si, Al, and O with the corresponding x-ray photoelectron spectra has been obtained. In the deep valence band the data from the MINDO/3 method are better than those from the CNDO/2 method and reproduce the positions of the maxima in the x-ray photoelectron spectra

  9. Effect of Si addition on the glass-forming ability of a NiTiZrAlCu alloy

    International Nuclear Information System (INIS)

    Liang, W.Z.; Shen, J.; Sun, J.F.

    2006-01-01

    The effect of Si addition on the glass-forming ability (GFA) of a NiTiZrAlCu alloy was investigated by using differential scanning calorimetry (DSC), differential thermal analysis (DTA), X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The maximum diameter of glassy rods increased from 0.5 mm for the Ni 42 Ti 20 Zr 25 Al 8 Cu 5 alloy (the base alloy) to 2.5 mm for the Ni 42 Ti 20 Zr 21.5 Al 8 Cu 5 Si 3.5 alloy and to 3 mm for the Ni 42 Ti 19 Zr 22.5 Al 8 Cu 5 Si 3.5 alloy, when prepared by using the copper mould casting. The GFA of the alloys can be assessed by the reduced glass transition temperature T rg (=T g /T l ) and a newly proposed parameter, δ(=T x /T l - T g ). An addition of a proper amount of Si and a minor substitution of Ti with Zr can enhance the GFA of the base alloy by suppressing the formation of primary Ni(TiZr) and (TiZr)(CuAl) 2 phases and inducing the composition close to eutectic

  10. Characterization of double Shockley-type stacking faults formed in lightly doped 4H-SiC epitaxial films

    Science.gov (United States)

    Yamashita, T.; Hayashi, S.; Naijo, T.; Momose, K.; Osawa, H.; Senzaki, J.; Kojima, K.; Kato, T.; Okumura, H.

    2018-05-01

    Double Shockley-type stacking faults (2SSFs) formed in 4H-SiC epitaxial films with a dopant concentration of 1.0 × 1016 cm-3 were characterized using grazing incident X-ray topography and high-resolution scanning transmission electron microscopy. The origins of 2SSFs were investigated, and it was found that 2SSFs in the epitaxial layer originated from narrow SFs with a double Shockley structure in the substrate. Partial dislocations formed between 4H-type and 2SSF were also characterized. The shapes of 2SSFs are related with Burgers vectors and core types of the two Shockley partial dislocations.

  11. Patterned microstructures formed with MeV Au implantation in Si(1 0 0)

    International Nuclear Information System (INIS)

    Rout, Bibhudutta; Greco, Richard R.; Zachry, Daniel P.; Dymnikov, Alexander D.; Glass, Gary A.

    2006-01-01

    Energetic (MeV) Au implantation in Si(1 0 0) (n-type) through masked micropatterns has been used to create layers resistant to KOH wet etching. Microscale patterns were produced in PMMA and SU(8) resist coatings on the silicon substrates using P-beam writing and developed. The silicon substrates were subsequently exposed using 1.5 MeV Au 3+ ions with fluences as high as 1 x 10 16 ions/cm 2 and additional patterns were exposed using copper scanning electron microscope calibration grids as masks on the silicon substrates. When wet etched with KOH microstructures were created in the silicon due to the resistance to KOH etching cause by the Au implantation. The process of combining the fabrication of masked patterns with P-beam writing with broad beam Au implantation through the masks can be a promising, cost-effective process for nanostructure engineering with Si

  12. Effect of the stoichiometry of Si-rich silicon nitride thin films on their photoluminescence and structural properties

    Energy Technology Data Exchange (ETDEWEB)

    Torchynska, T.V., E-mail: ttorch@esfm.ipn.mx [ESFM—Instituto Politecnico Nacional, Mexico DF 07738 (Mexico); Casas Espinola, J.L. [ESFM—Instituto Politecnico Nacional, Mexico DF 07738 (Mexico); Vergara Hernandez, E. [UPIITA—Instituto Politecnico Nacional, Mexico DF 07320 (Mexico); Khomenkova, L., E-mail: khomen@ukr.net [V. Lashkaryov Institute of Semiconductor Physics, 45 Pr. Nauky, 03028 Kyiv (Ukraine); Delachat, F.; Slaoui, A. [ICube, 23 rue du Loess, BP 20 CR, 67037 Strasbourg Cedex 2 (France)

    2015-04-30

    Si-rich Silicon nitride films were grown on silicon substrates by plasma enhanced chemical vapor deposition. The film stoichiometry was controlled via the variation of NH{sub 3}/SiH{sub 4} ratio from 0.45 up to 1.0. Thermal annealing at 1100 °C for 30 min in the nitrogen flow was applied to form the Si nanocrystals in the films that have been investigated by means of photoluminescence and Raman scattering methods, as well as transmission electron microscopy. Several emission bands have been detected with the peak positions at: 2.8–3.0 eV, 2.5–2.7 eV, 2.10–2.25 eV, and 1.75–1.98 eV. The temperature dependences of photoluminescence spectra were studied with the aim to confirm the types of optical transitions and the nature of light emitting defects in silicon nitride. The former three bands were assigned to the defects in silicon nitride, whereas the last one (1.75–1.98 eV) was attributed to the exciton recombination inside of Si nanocrystals. The photoluminescence mechanism is discussed. - Highlights: • Substoichiometric silicon nitride films were grown by PECVD technique. • The variation of the NH{sub 3}/SiH{sub 4} ratio controls excess Si content in the films. • Both Si nanocrystals and amorphous Si phase were observed in annealed films. • Temperature evolution of carrier recombination via Si nanocrystals and host defects.

  13. Resistivity and morphology of TiSi2 formed on Xe+-implanted polycrystalline silicon

    International Nuclear Information System (INIS)

    Kuwano, H.; Phillips, J.R.; Mayer, J.W.

    1990-01-01

    Xe ion irradiation of polycrystalline silicon before Ti deposition is found to affect subsequent silicide formation. Silicide films were prepared by implanting 60, 100, or 240 keV Xe + ions into 500-nm-thick undoped polycrystalline silicon before depositing Ti and annealing in vacuum. Preimplantation altered the subsequent silicide resistivity, x-ray diffraction patterns, and morphology as compared to films prepared on unimplanted polycrystalline Si substrates. We found that minimal TiSi 2 resistivities were achieved at lower temperatures with preimplantation, indicating that the Xe-implanted substrate promotes a lower temperature transition from the metastable C49 phase to the low-resistivity equilibrium C54 phase of TiSi 2 . X-ray diffraction results confirmed the lower temperature formation of the C54 phase with preimplantation. Low-temperature annealing (650 degree C, 30 min) of 6x10 16 cm -2 , 240 keV Xe + -implanted samples yielded low-resistivity (∼22 μΩ cm) silicide films, while simultaneously annealed samples without preimplantation had resistivity five times higher. Lower doses were effective at lower implant energies, with low resistivity achieved after 725 degree C, 30 min annealing for 2x10 15 cm -2 , 60 keV Xe + preimplantation

  14. Interfacial interactions between calcined hydroxyapatite nanocrystals and substrates.

    Science.gov (United States)

    Okada, Masahiro; Furukawa, Keiko; Serizawa, Takeshi; Yanagisawa, Yoshihiko; Tanaka, Hidekazu; Kawai, Tomoji; Furuzono, Tsutomu

    2009-06-02

    Interfacial interactions between calcined hydroxyapatite (HAp) nanocrystals and surface-modified substrates were investigated by measuring adsorption behavior and adhesion strength with a quartz crystal microbalance (QCM) and a contact-mode atomic force microscope (AFM), respectively. The goal was to develop better control of HAp-nanocrystal coatings on biomedical materials. HAp nanocrystals with rodlike or spherical morphology were prepared by a wet chemical process followed by calcination at 800 degrees C with an antisintering agent to prevent the formation of sintered polycrystals. The substrate surface was modified by chemical reaction with a low-molecular-weight compound, or graft polymerization with a functional monomer. QCM measurement showed that the rodlike HAp nanocrystals adsorbed preferentially onto anionic COOH-modified substrates compared to cationic NH2- or hydrophobic CH3-modified substrates. On the other hand, the spherical nanocrystals adsorbed onto NH2- and COOH-modified substrates, which indicates that the surface properties of the HAp nanocrystals determined their adsorption behavior. The adhesion strength, which was estimated from the force required to move the nanocrystal in contact-mode AFM, on a COOH-grafted substrate prepared by graft polymerization was almost 9 times larger than that on a COOH-modified substrate prepared by chemical reaction with a low-molecular-weight compound, indicating that the long-chain polymer grafted on the substrate mitigated the surface roughness mismatch between the nanocrystal and the substrate. The adhesion strength of the nanocrystal bonded covalently by the coupling reaction to a Si(OCH3)-grafted substrate prepared by graft polymerization was approximately 1.5 times larger than that when adsorbed on the COOH-grafted substrate.

  15. Crystallization and Growth of Colloidal Nanocrystals

    CERN Document Server

    Leite, Edson Roberto

    2012-01-01

    Since the size, shape, and microstructure of nanocrystalline materials strongly impact physical and chemical properties, the development of new synthetic routes to  nanocrystals with controlled composition and morphology is a key objective of the nanomaterials community. This objective is dependent on control of the nucleation and growth mechanisms that occur during the synthetic process, which in turn requires a fundamental understanding of both classical nucleation and growth and non-classical growth processes in nanostructured materials.  Recently, a novel growth process called Oriented Attachment (OA) was identified which appears to be a fundamental mechanism during the development of nanoscale  materials. OA is a special case of aggregation that provides an important route by which nanocrystals grow, defects are formed, and unique—often symmetry-defying—crystal morphologies can be produced. This growth mechanism involves reversible self-assembly of primary nanocrystals followed by reorientati...

  16. A single molecule switch based on two Pd nanocrystals linked

    Indian Academy of Sciences (India)

    Conducting molecule; nanocrystals; scanning tunneling microscopy; negative differential resistance. Abstract. Tunneling spectroscopy measurements have been carried out on a single molecule device formed by two Pd ... Current Issue : Vol.

  17. Hydrogen-permeable TiO{sub 2}/SiO{sub 2} membranes formed by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ha, Heung Yong; Nam, Suk Woo; Yoon, Sung Pil [Korea Institute of Science and Technology, Seoul (Korea, Republic of)] [and others

    1994-12-31

    Thin films of TiO{sub 2}/SiO{sub 2} were deposited on the inner surface of the porous support tubes by the decomposition of tetraisopropyl titanate (TIPT) and tetraethyl orthosilicate (TEOS) at atmospheric pressure. Dense and hydrogen-permeable membranes were formed at 400-600{degrees}C. The permeation rate of H{sub 2} through the membrane at 600{degrees}C was about 0.3 cm{sup 3}(STP)/min-cm{sup 2}-atm and H{sub 2}/N{sub 2} permeation ratio was above 1000. The permeation properties of the membranes were investigated at various deposition temperatures and TIPT/TEOS concentrations. Decomposition of TIPT alone at temperatures above 400{degrees}C produced porous crystalline TiO{sub 2} films which were not H{sub 2}-selective. Decomposition of TEOS, however produced H{sub 2}-permeable SiO{sub 2} films at 400-600{degrees}C but film deposition rate was very low. Addition of TIPT to the TEOS stream significantly accelerated the deposition rate and produced highly H{sub 2}-selective films. Increasing the TEPT/TEOS ratios increased the deposition rate. The TiO{sub 2}/SiO{sub 2} membranes have the permeation properties comparable to those of SiO{sub 2} membranes. The TiO{sub 2}/SiO{sub 2} membranes were stable and did not show significant densification during the treatment at high temperature.

  18. Nano-scale clusters formed in the early stage of phase decomposition of Al-Mg-Si alloys

    Energy Technology Data Exchange (ETDEWEB)

    Hirosawa, S.; Sato, T. [Dept. of Metallurgy and Ceramics Science, Tokyo Inst. of Tech. (Japan)

    2005-07-01

    The formation of nano-scale clusters (nanoclusters) prior to the precipitation of the strengthening {beta}'' phase significantly influences two-step aging behavior of Al-Mg-Si alloys. In this work, the existence of two kinds of nanoclusters has been verified in the early stage of phase decomposition by differential scanning calorimetry (DSC) and three-dimensional atom probe (3DAP). Pre-aging treatment at 373 K before natural aging was also found to form preferentially one of the two nanoclusters, resulting in the remarkable restoration of age-hardenability at paint-bake temperatures. Such microstructural control by means of optimized heat-treatments; i.e. nanocluster assist processing (NCAP), possesses great potential for enabling Al-Mg-Si alloys to be used more widely as a body-sheet material of automobiles. (orig.)

  19. Ge clusters and wetting layers forming from granular films on the Si(001) surface

    International Nuclear Information System (INIS)

    Storozhevykh, M S; Arapkina, L V; Yuryev, V A

    2016-01-01

    The report studies the transformation of a Ge granular film deposited on the Si(001) surface at room temperature into a Ge/Si(001) heterostructure as a result of rapid heating and annealing at 600 °C. As a result of the short-term annealing at 600 °C in conditions of a closed system, the Ge granular film transforms into a usual wetting layer and Ge clusters with multimodal size distribution and Ge oval drops having the highest number density. After the long-term thermal treatment of the Ge film at the same temperature, Ge drops disappear; the large clusters increase their sizes at the expense of the smaller ones. The total density of Ge clusters on the surface drastically decreases. The wetting layer mixed c(4 x 2) + p(2 x 2) reconstruction transforms into a single c(4 x 2) one which is likely to be thermodynamically favoured. Pyramids or domes are not observed on the surface after any annealing. (paper)

  20. Enhancing Hydrogen Diffusion in Silica Matrix by Using Metal Ion Implantation to Improve the Emission Properties of Silicon Nanocrystals

    Directory of Open Access Journals (Sweden)

    J. Bornacelli

    2014-01-01

    Full Text Available Efficient silicon-based light emitters continue to be a challenge. A great effort has been made in photonics to modify silicon in order to enhance its light emission properties. In this aspect silicon nanocrystals (Si-NCs have become the main building block of silicon photonic (modulators, waveguide, source, and detectors. In this work, we present an approach based on implantation of Ag (or Au ions and a proper thermal annealing in order to improve the photoluminescence (PL emission of Si-NCs embedded in SiO2. The Si-NCs are obtained by ion implantation at MeV energy and nucleated at high depth into the silica matrix (1-2 μm under surface. Once Si-NCs are formed inside the SiO2 we implant metal ions at energies that do not damage the Si-NCs. We have observed by, PL and time-resolved PL, that ion metal implantation and a subsequent thermal annealing in a hydrogen-containing atmosphere could significantly increase the emission properties of Si-NCs. Elastic Recoil Detection measurements show that the samples with an enhanced luminescence emission present a higher hydrogen concentration. This suggests that ion metal implantation enhances the hydrogen diffusion into silica matrix allowing a better passivation of surface defects on Si NCs.

  1. Self-aggregation of magnetic semiconductor EuS nanocrystals

    International Nuclear Information System (INIS)

    Tanaka, Atsushi; Hasegawa, Yasuchika; Kamikubo, Hironari; Kataoka, Mikio; Kawai, Tsuyoshi

    2009-01-01

    Controlled formation of aggregates having organized structure of cube-shaped EuS nanocrystals is reported. The EuS aggregates in liquid media (methanol) were obtained by means of van der Waals interaction between EuS nanocrystals. The packing structure of the EuS aggregates is characterized with transmission electron microscopy (TEM) and small angle X-ray scattering measurements (SAXS). TEM image indicates the EuS nanocrystals form self-aggregated 2D orthogonal lattice structure. The diffraction peak of (111) of SAXS profile shows that the cube-shaped EuS form 3D cubic superlattice. We successfully demonstrated that the aggregates of cube-shaped EuS nanocrystals formed cubic stacking structure.

  2. Hydrogen production from nano-porous Si powder formed by stain etching

    Energy Technology Data Exchange (ETDEWEB)

    Litvinenko, S.; Alekseev, S.; Kuznetsov, G.; Skryshevsky, V. [Institute of High Technology of National Taras Shevchenko University of Kyiv, Volodymyrs' ka 64, Kyiv 01601 (Ukraine); Lysenko, V.; Barbier, D. [Lyon Institute of Nanotechnologies (INL), CNRS UMR-5270, University of Lyon, INSA de Lyon, 7 avenue Jean Capelle, Bat. Blaise Pascal, 69621 Villeurbanne Cedex (France); Venturello, A.; Geobaldo, F.; Garrone, E. [Politecnico di Torino, Department of Materials Science and Chemical Engineering, 10129 Torino (Italy); Gulina, L.; Tolstoy, V. [St-Petersburg State University, Chemical Department (Russian Federation)

    2010-07-15

    Hydrogen reservoirs based on porous silicon (PS) nanostructures are considered. Silicon-based hydrogen tanks are believed to be applicable for portable device energy supply and compatible with micro-sources of energy of new generation. Stain etching of silicon powder to produce PS is studied as a technology alternative to conventional electrochemical etching and application of the PS powder for hydrogen production is also described. Size selection of initial Si micro-particles constituting the powders was carried out by sedimentation technique. Hydrogen content in PS was investigated by FTIR spectroscopy. Extraction of hydrogen in water environment in presence of small amount of NH{sub 3} as catalyst was shown to have advantages such as safety and tunability, additional production of hydrogen from water dissociation, and a possibility to characterize PS as a hydrogen source material in terms of hydrogen effective shell and crystalline core conception. (author)

  3. Ti–Al–O nanocrystal charge trapping memory cells fabricated by atomic layer deposition

    International Nuclear Information System (INIS)

    Cao, Zheng-Yi; Li, Ai-Dong; Li, Xin; Cao, Yan-Qiang; Wu, Di

    2014-01-01

    Charge trapping memory cells using Ti–Al–O (TAO) film as charge trapping layer and amorphous Al 2 O 3 as the tunneling and blocking layers were fabricated on Si substrates by atomic layer deposition method. As-deposited TAO films were annealed at 700 °C, 800 °C and 900 °C for 3 min in N 2 with a rapid thermal annealing process to form nanocrystals. High-resolution transmission electron microscopy and X-ray photoelectron spectroscopy were used to characterize the microstructure and band diagram of the heterostructures. The electrical characteristics and charge storage properties of the Al 2 O 3 /TAO/Al 2 O 3 /Si stack structures were also evaluated. Compared to 700 °C and 900 °C samples, the memory cells annealed at 800 °C exhibit better memory performance with larger memory window of 4.8 V at ± 6 V sweeping, higher program/erase speed and excellent endurance. - Highlights: • The charge trapping memory cells were fabricated by atomic layer deposition method. • The anneal temperature plays a key role in forming nanocrystals. • The memory cells annealed at 800 °C exhibit better memory performance. • The band alignment is beneficial to enhance the retention characteristics

  4. Formation of nanocrystals embedded in a silicon nitride film at a low temperature ({<=}200 deg. C)

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Kyoung-Min; Kim, Tae-Hwan [Department of Nano Science and Technology, University of Seoul, Seoul 130-743 (Korea, Republic of); Hong, Wan-Shick [Department of Nano Science and Technology, University of Seoul, Seoul 130-743 (Korea, Republic of)], E-mail: wshong@uos.ac.kr

    2008-12-15

    Silicon-rich silicon nitride films with embedded silicon nanocrystals (Si NCs) were fabricated successfully on plastic substrates at a low temperature by catalytic chemical vapor deposition. A mixture of SiH{sub 4}, NH{sub 3} and H{sub 2} was used as a source gas. Formation of the silicon nanocrystals was analyzed by photoluminescence spectra and was confirmed by transmission electron microscopy. The formation of Si NCs required an H{sub 2}/SiH{sub 4} mixture ratio that was higher than four.

  5. Microstructurally Controlled Mechanical Properties of Al-Mg-Si Alloys for Warm Forming Applications

    NARCIS (Netherlands)

    Ghosh, M.

    2011-01-01

    Owing to their light weight and excellent corrosion resistance the use of aluminium alloys in automotive industries is increasing progressively. However, aluminium alloys remain mainly handicapped by poor room temperature formability compared to steel. Increasing temperature during forming, but

  6. Dependence of glass-forming ability on starting compositions in Y2O3–Al2O3–SiO2 system

    Directory of Open Access Journals (Sweden)

    Yixiang Chen

    2011-09-01

    Full Text Available The dependence of glass-forming ability on starting compositions in Y2O3–Al2O3–SiO2 (YAS system has been investigated by melting experiment. Transparent YAS glasses have been prepared under the condition of furnace cooling instead of quenching. It is found that, in the YAS ternary phase diagram, the compositions on the Y3Al5O12–SiO2 line and with 52-68 mol% SiO2 have a higher glass-forming ability to produce pure glass. For the compositions with too much or less SiO2 or with Y/Al = 5/3, 1/1, or 1/3, crystallization occurs with the formation of Y3Al5O12, Y2Si2O7, Al6Si2O13, or SiO2. The densities of the YAS glasses increase with decreasing SiO2 contents and increasing Y/Al ratios, and for the samples with Y/Al = 3/5 there is a good linear relationship between the density and SiO2 content.

  7. Nanocrystal Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Gur, Ilan [Univ. of California, Berkeley, CA (United States)

    2006-01-01

    This dissertation presents the results of a research agenda aimed at improving integration and stability in nanocrystal-based solar cells through advances in active materials and device architectures. The introduction of 3-dimensional nanocrystals illustrates the potential for improving transport and percolation in hybrid solar cells and enables novel fabrication methods for optimizing integration in these systems. Fabricating cells by sequential deposition allows for solution-based assembly of hybrid composites with controlled and well-characterized dispersion and electrode contact. Hyperbranched nanocrystals emerge as a nearly ideal building block for hybrid cells, allowing the controlled morphologies targeted by templated approaches to be achieved in an easily fabricated solution-cast device. In addition to offering practical benefits to device processing, these approaches offer fundamental insight into the operation of hybrid solar cells, shedding light on key phenomena such as the roles of electrode-contact and percolation behavior in these cells. Finally, all-inorganic nanocrystal solar cells are presented as a wholly new cell concept, illustrating that donor-acceptor charge transfer and directed carrier diffusion can be utilized in a system with no organic components, and that nanocrystals may act as building blocks for efficient, stable, and low-cost thin-film solar cells.

  8. Micromagnetic study of single-domain FePt nanocrystals overcoated with silica

    International Nuclear Information System (INIS)

    Hyun, Changbae; Lee, Doh C; Korgel, Brian A; Lozanne, Alex de

    2007-01-01

    Chemically-synthesized FePt nanocrystals must be annealed at a high temperature (>550 deg. C) to induce the hard ferromagnetic L 1 0 phase. Unfortunately, the organic stabilizer covering these nanocrystals degrades at these temperatures and the nanocrystals sinter, resulting in the loss of control over nanocrystal size and separation in the film. We have developed a silica overcoating strategy to prevent nanocrystal sintering. In this study, 6 nm diameter FePt nanocrystals were coated with 17 nm thick shells of silica using an inverse micelle process. Magnetization measurements of the annealed FePt-SiO 2 nanocrystals indicate ferromagnetism with a high coercivity at room temperature. Magnetic force microscopy (MFM) results show that the film composed of nanocrystals behaves as a dipole after magnetization by an 8 T external field. The individual nanocrystals are modelled as single-domain particles with random crystallographic orientations. We propose that the interparticle magnetic dipole interaction is weaker than the magnetocrystalline energy in the remanent state, leading to an unusual material with no magnetic anisotropy and no domains. Films of these nanoparticles are promising candidates for magnetic media with a data storage density of ∼Tb/in 2

  9. Forming characteristics of artificial aging Al-Mg-Si-Cu sheet alloys

    Science.gov (United States)

    Klos, Artur; Kellner, Sven; Wortberg, Daniel; Walter, Philipp; Bassi, Corrado; Merklein, Marion

    2017-10-01

    AA6111 is a commonly used aluminum alloy for body-in-white (BIW) components with good bake-hardening response, high strength and excellent formability. For industrial applications various process strategies are considered to reach strength of about 250 MPa in the final body part with that type of alloy. The purpose of this paper is to discuss recent process strategies of high-strength AA6111 sheets to evaluate the forming characteristics, precipitation kinetics dissolution and mechanical properties in the final condition. The forming behavior is investigated by four potential process chains after single-stage or multi-stage heat treatment including T4 (pre-aged at > 80 °C after quenching), T61 (T4 + artificial aged at 120-150 °C for 10-18 h), T6 (T4 + artificial aged at 180-220°C up to 12 h) and PFHT (T4 + post form heat treatment at 205°C for 30 min). The experimental input for characterization of the formability consists of tensile tests, bending tests and drawing tests. Differential Scanning Calorimetry (DSC) is used, to correlate the forming behavior with the precipitation distribution in the advanced stages of aging. The study shows that the forming behavior is strongly dependent on the condition the alloy.

  10. Formation of colloidal semiconductor nanocrystals. The aspect of nucleation

    Energy Technology Data Exchange (ETDEWEB)

    Kudera, S.

    2007-08-17

    The present work describes different techniques to control some major parameters of colloidal nanocrystals. The individual techniques rely on the manipulation of the nucleation event. The sensitive control of the nanocrystals' size and shape is discussed. Furthermore the formation of hybrid nanocrystals composed of different materials is presented. The synthesis technique for the production of the different samples involves organic solvents and surfactants and reactions at elevated temperatures. The presence of magic size clusters offers a possibility to control the size of the nanocrystals even at very small dimensions. The clusters produced comprise ca. 100 atoms. In the case of CdSe, nanocrystals of this size emit a blue fluorescence and therefore extend the routinely accessible spectrum for this material over the whole visible range. Samples fluorescing in the spectral range from green to red are produced with standard recipes. In this work a reaction scheme for magic size clusters is presented and a theoretical model to explain the particular behaviour of their growth dynamics is discussed. The samples are investigated by optical spectroscopy, transmission electron microscopy, X-ray diffraction and elemental analysis. A method to form branched nanocrystals is discussed. The branching point is analysed by high resolution transmission electron microscopy and proves for the occurrence of a multiple twinned structure are strengthened by simulation of the observed patterns. Two different techniques to generate nanocrystals of this type are presented. The first relies on a seeded growth approach in which the nucleation of the second material is allowed only on de ned sites of the seeds. The second technique uses the tips of pre-formed nano-dumbbells as sacrificial domains. The material on the tips is replaced by gold. Hybrid materials are formed by a seeded-growth mechanism. Pre-formed nanocrystals provide the nucleation sites for the second material. (orig.)

  11. Formation of colloidal semiconductor nanocrystals. The aspect of nucleation

    Energy Technology Data Exchange (ETDEWEB)

    Kudera, S

    2007-08-17

    The present work describes different techniques to control some major parameters of colloidal nanocrystals. The individual techniques rely on the manipulation of the nucleation event. The sensitive control of the nanocrystals' size and shape is discussed. Furthermore the formation of hybrid nanocrystals composed of different materials is presented. The synthesis technique for the production of the different samples involves organic solvents and surfactants and reactions at elevated temperatures. The presence of magic size clusters offers a possibility to control the size of the nanocrystals even at very small dimensions. The clusters produced comprise ca. 100 atoms. In the case of CdSe, nanocrystals of this size emit a blue fluorescence and therefore extend the routinely accessible spectrum for this material over the whole visible range. Samples fluorescing in the spectral range from green to red are produced with standard recipes. In this work a reaction scheme for magic size clusters is presented and a theoretical model to explain the particular behaviour of their growth dynamics is discussed. The samples are investigated by optical spectroscopy, transmission electron microscopy, X-ray diffraction and elemental analysis. A method to form branched nanocrystals is discussed. The branching point is analysed by high resolution transmission electron microscopy and proves for the occurrence of a multiple twinned structure are strengthened by simulation of the observed patterns. Two different techniques to generate nanocrystals of this type are presented. The first relies on a seeded growth approach in which the nucleation of the second material is allowed only on de ned sites of the seeds. The second technique uses the tips of pre-formed nano-dumbbells as sacrificial domains. The material on the tips is replaced by gold. Hybrid materials are formed by a seeded-growth mechanism. Pre-formed nanocrystals provide the nucleation sites for the second material. (orig.)

  12. Ultrabroadband terahertz conductivity of Si nanocrystal films

    DEFF Research Database (Denmark)

    Cooke, D. G.; Meldrum, A.; Jepsen, P. Uhd

    2012-01-01

    The terahertz conductivity of silicon nanoparticles embedded in glass with varying density is studied with ultra-broadband terahertz spectroscopy on picosecond time scales following fs optical excitation. The transition from relatively isolated charge carriers to densities which allow inter...... the applicability of this simple model to the conductivity of nanoparticle ensembles over the entire THz spectral window....

  13. Photonic metasurface made of array of lens-like SiGe Mie resonators formed on (100) Si substrate via dewetting

    Science.gov (United States)

    Poborchii, Vladimir; Shklyaev, Alexander; Bolotov, Leonid; Uchida, Noriyuki; Tada, Tetsuya; Utegulov, Zhandos N.

    2017-12-01

    Metasurfaces consisting of arrays of high-index Mie resonators concentrating/redirecting light are important for integrated optics, photodetectors, and solar cells. Herein, we report the optical properties of low-Ge-content SiGe lens-like Mie resonator island arrays fabricated via dewetting during Ge deposition on a Si(100) surface at approximately 900 °C. We observe enhancement of the Si interaction with light owing to the efficient island-induced light concentration in the submicron-depth Si layer, which is mediated by both near-field Mie resonance leaking into the substrate and far-field light focusing. Such metasurfaces can improve the Si photodetector and solar-cell performance.

  14. Microstructural features and heat flow analysis of atomized and spray-formed Al-Fe-V-Si alloy

    International Nuclear Information System (INIS)

    Srivastava, A.K.; Ranganathan, S.; Ojha, S.N.

    1998-01-01

    Microstructural features of rapidly solidified powders and preforms of Al 80 Fe 10 V 4 Si 6 alloy produced by spray forming process have been studied. The atomization and spray deposition were carried out using a confined gas atomization process and the microstructural features were characterized using scanning electron microscopy and transmission electron microscopy (TEM) and X-ray diffraction (XRD) techniques. The microstructure of a wide size range of atomized powders invariably revealed cellular and dendritic morphology. The extent of dendritic region and the dendritic arm spacing were observed to increase with power particle size. The TEM investigations indicated the presence of ultrafine second-phase particles in the intercellular or interdendritic regions. In contrast, the spray deposits of the alloy showed considerable variation in microstructure and size and dispersion of the second-phase particles at specific distances from the deposit-substrate interface and the exterior regions of the deposit. Nevertheless, considerable homogeneity was observed in the microstructure toward the center of the spray deposit. The formation and distribution of a cubic phase α-Al(Fe, V)Si has been characterized in both atomized powders and spray deposits. A one-dimensional heat flow model has been used to analyze the evolution of microstructure during atomization and also during spray deposition processing of this alloy. The results indicate that thermal history of droplets in the spray on deposition surface and their solidification behavior considerably influence the microstructural features of the spray deposits

  15. Controlled growth of periodically aligned copper-silicide nanocrystal arrays on silicon directed by laser-induced periodic surface structures (LIPSS)

    Science.gov (United States)

    Nürnberger, Philipp; Reinhardt, Hendrik M.; Rhinow, Daniel; Riedel, René; Werner, Simon; Hampp, Norbert A.

    2017-10-01

    In this paper we introduce a versatile tool for the controlled growth and alignment of copper-silicide nanocrystals. The method takes advantage of a unique self-organization phenomenon denoted as laser-induced periodic surface structures (LIPSS). Copper films (3 ± 0.2 nm) are sputter-deposited onto single crystal silicon (100) substrates with a thin oxide layer (4 ± 0.2 nm), and subsequently exposed to linearly polarized nanosecond laser pulses (τ ≈ 6 ns) at a central wavelength of 532 nm. The irradiation triggers dewetting of the Cu film and simultaneous formation of periodic Cu nanowires (LIPSS), which partially penetrate the oxide layer to the Si substrate. These LIPSS act as nucleation centers for the growth of Cu-Si crystals during thermal processing at 500 °C under forming gas 95/5 atmosphere. Exemplified by our model system Cu/SiO2/Si, LIPSS are demonstrated to facilitate the diffusion reaction between Cu and underlying Si. Moreover, adjustment of the laser polarization allows us to precisely control the nanocrystal alignment with respect to the LIPSS orientation. Potential applications and conceivable alternatives of this process are discussed.

  16. Gas-phase synthesis of semiconductor nanocrystals and its applications

    Science.gov (United States)

    Mandal, Rajib

    Luminescent nanomaterials is a newly emerging field that provides challenges not only to fundamental research but also to innovative technology in several areas such as electronics, photonics, nanotechnology, display, lighting, biomedical engineering and environmental control. These nanomaterials come in various forms, shapes and comprises of semiconductors, metals, oxides, and inorganic and organic polymers. Most importantly, these luminescent nanomaterials can have different properties owing to their size as compared to their bulk counterparts. Here we describe the use of plasmas in synthesis, modification, and deposition of semiconductor nanomaterials for luminescence applications. Nanocrystalline silicon is widely known as an efficient and tunable optical emitter and is attracting great interest for applications in several areas. To date, however, luminescent silicon nanocrystals (NCs) have been used exclusively in traditional rigid devices. For the field to advance towards new and versatile applications for nanocrystal-based devices, there is a need to investigate whether these NCs can be used in flexible and stretchable devices. We show how the optical and structural/morphological properties of plasma-synthesized silicon nanocrystals (Si NCs) change when they are deposited on stretchable substrates made of polydimethylsiloxane (PDMS). Synthesis of these NCs was performed in a nonthermal, low-pressure gas phase plasma reactor. To our knowledge, this is the first demonstration of direct deposition of NCs onto stretchable substrates. Additionally, in order to prevent oxidation and enhance the luminescence properties, a silicon nitride shell was grown around Si NCs. We have demonstrated surface nitridation of Si NCs in a single step process using non?thermal plasma in several schemes including a novel dual-plasma synthesis/shell growth process. These coated NCs exhibit SiNx shells with composition depending on process parameters. While measurements including

  17. Formation and characterization of nanoparticles formed by sequential ion implantation of Au and Co into SiO2

    International Nuclear Information System (INIS)

    Kluth, P.; Hoy, B.; Johannessen, B.; Dunn, S.G.; Foran, G.J.; Ridgway, M.C.

    2007-01-01

    Nanoparticles (NPs) were formed by sequential ion implantation of Au and Co into thin SiO 2 . After Au implantation and annealing, Co implantations were carried out at room temperature (RT) and 400 deg. C, respectively, with no subsequent annealing. The NPs were investigated by means of Rutherford backscattering spectroscopy (RBS), transmission electron microscopy (TEM) and extended X-ray absorption fine structure spectroscopy (EXAFS). TEM shows the formation of Co-Au core-shell NPs for the Co implantation at 400 deg. C. EXAFS measurements indicate significant strain in the NPs and a bond-length expansion of the Co-Co bonds in the NP core with a concomitant contraction of the Au-Au bonds in the Au shells. NPs are also observed by TEM for the Co implantation performed at RT, however, a lack of crystallinity is apparent from electron diffraction and EXAFS measurements

  18. Charge transport in metal oxide nanocrystal-based materials

    Science.gov (United States)

    Runnerstrom, Evan Lars

    structure. Charge transport can obviously be taken to mean the conduction of electrons, but it also refers to the motion of ions, such as lithium ions and protons. In many cases, the transport of ions is married to the motion of electrons as well, either through an external electrical circuit, or within the same material in the case of mixed ionic electronic conductors. The collective motion of electrons over short length scales, that is, within single nanocrystals, is also a subject of study as it pertains to plasmonic nanocrystals. Finally, charge transport can also be coupled to or result from the formation of defects in metal oxides. All of these modes of charge transport in metal oxides gain further complexity when considered in nanocrystalline systems, where the introduction of numerous surfaces can change the character of charge transport relative to bulk systems, providing opportunities to exploit new physical phenomena. Part I of this dissertation explores the combination of electronic and ionic transport in electrochromic devices based on nanocrystals. Colloidal chemistry and solution processing are used to fabricate nanocomposites based on electrochromic tin-doped indium oxide (ITO) nanocrystals. The nanocomposites, which are completely synthesized using solution processing, consist of ITO nanocrystals and lithium bis(trifluoromethylsulfonyl)amide (LiTFSI) salt dispersed in a lithium ion-conducting polymer matrix of either poly(ethylene oxide) (PEO) or poly(methyl methacrylate) (PMMA). ITO nanocrystals are prepared by colloidal synthetic methods and the nanocrystal surface chemistry is modified to achieve favorable nanocrystal-polymer interactions. Homogeneous solutions containing polymer, ITO nanocrystals, and lithium salt are thus prepared and deposited by spin casting. Characterization by DC electronic measurements, microscopy, and x-ray scattering techniques show that the ITO nanocrystals form a complete, connected electrode within a polymer electrolyte

  19. Light emission from silicon with tin-containing nanocrystals

    Directory of Open Access Journals (Sweden)

    Søren Roesgaard

    2015-07-01

    Full Text Available Tin-containing nanocrystals, embedded in silicon, have been fabricated by growing an epitaxial layer of Si1−x−ySnxCy, where x = 1.6 % and y = 0.04 % on a silicon substrate, followed by annealing at various temperatures ranging from 650 ∘C to 900 ∘C. The nanocrystal density and average diameters are determined by scanning transmission-electron microscopy to ≈1017 cm−3 and ≈5 nm, respectively. Photoluminescence spectroscopy demonstrates that the light emission is very pronounced for samples annealed at 725 ∘C, and Rutherford back-scattering spectrometry shows that the nanocrystals are predominantly in the diamond-structured phase at this particular annealing temperature. The origin of the light emission is discussed.

  20. Dependence of glass-forming ability on starting compositions in Y2O3–Al2O3–SiO2 system

    OpenAIRE

    Yixiang Chen; Zengchao Yang; Bin He; Guanghua Liu; Jiangtao Li; Liang Wu

    2011-01-01

    The dependence of glass-forming ability on starting compositions in Y2O3–Al2O3–SiO2 (YAS) system has been investigated by melting experiment. Transparent YAS glasses have been prepared under the condition of furnace cooling instead of quenching. It is found that, in the YAS ternary phase diagram, the compositions on the Y3Al5O12–SiO2 line and with 52-68 mol% SiO2 have a higher glass-forming ability to produce pure glass. For the compositions with too much or less SiO2 or with Y/Al = 5/3, 1/1,...

  1. Pinning-free GaAs MIS structures with Si interface control layers formed on (4 x 6) reconstructed (0 0 1) surface

    Energy Technology Data Exchange (ETDEWEB)

    Anantathanasarn, Sanguan; Hasegawa, Hideki

    2003-06-30

    (0 0 1)-Oriented GaAs metal-insulator-semiconductor (MIS) structures having a silicon interface control layer (Si ICL) were fabricated on surfaces having Ga-rich (4x6) reconstructions. Si ICL was grown by molecular beam epitaxy. MIS structures were fabricated by partially converting Si ICL to SiN{sub x} by direct nitridation, and further depositing a thick SiO{sub 2} layer on top as the main passivation dielectric by plasma-assisted chemical vapor deposition. Reflection high-energy electron diffraction, in situ X-ray photoelectron spectroscopy and MIS capacitance-voltage (C-V) techniques were used for characterization. The initial surface reconstruction was found to have a surprisingly strong effect on the degree of Fermi level pinning at the MIS interface. In contrast to the standard As-rich (2x4) surface, which results in strongly pinned MIS interfaces, the novel SiO{sub 2}/SiN{sub x}/Si ICL/GaAs MIS structures formed on ''genuine'' (4x6) surface realized complete unpinning of Fermi level over the entire band gap with a minimum interface state density of 4x10{sup 10} cm{sup -2} eV{sup -1} range.

  2. Ion beam synthesis of indium-oxide nanocrystals for improvement of oxide resistive random-access memories

    Science.gov (United States)

    Bonafos, C.; Benassayag, G.; Cours, R.; Pécassou, B.; Guenery, P. V.; Baboux, N.; Militaru, L.; Souifi, A.; Cossec, E.; Hamga, K.; Ecoffey, S.; Drouin, D.

    2018-01-01

    We report on the direct ion beam synthesis of a delta-layer of indium oxide nanocrystals (In2O3-NCs) in silica matrices by using ultra-low energy ion implantation. The formation of the indium oxide phase can be explained by (i) the affinity of indium with oxygen, (ii) the generation of a high excess of oxygen recoils generated by the implantation process in the region where the nanocrystals are formed and (iii) the proximity of the indium-based nanoparticles with the free surface and oxidation from the air. Taking advantage of the selective diffusivity of implanted indium in SiO2 with respect to Si3N4, In2O3-NCs have been inserted in the SiO2 switching oxide of micrometric planar oxide-based resistive random access memory (OxRAM) devices fabricated using the nanodamascene process. Preliminary electrical measurements show switch voltage from high to low resistance state. The devices with In2O3-NCs have been cycled 5 times with identical operating voltages and RESET current meanwhile no switch has been observed for non implanted devices. This first measurement of switching is very promising for the concept of In2O3-NCs based OxRAM memories.

  3. High performance SONOS flash memory with in-situ silicon nanocrystals embedded in silicon nitride charge trapping layer

    Science.gov (United States)

    Lim, Jae-Gab; Yang, Seung-Dong; Yun, Ho-Jin; Jung, Jun-Kyo; Park, Jung-Hyun; Lim, Chan; Cho, Gyu-seok; Park, Seong-gye; Huh, Chul; Lee, Hi-Deok; Lee, Ga-Won

    2018-02-01

    In this paper, SONOS-type flash memory device with highly improved charge-trapping efficiency is suggested by using silicon nanocrystals (Si-NCs) embedded in silicon nitride (SiNX) charge trapping layer. The Si-NCs were in-situ grown by PECVD without additional post annealing process. The fabricated device shows high program/erase speed and retention property which is suitable for multi-level cell (MLC) application. Excellent performance and reliability for MLC are demonstrated with large memory window of ∼8.5 V and superior retention characteristics of 7% charge loss for 10 years. High resolution transmission electron microscopy image confirms the Si-NC formation and the size is around 1-2 nm which can be verified again in X-ray photoelectron spectroscopy (XPS) where pure Si bonds increase. Besides, XPS analysis implies that more nitrogen atoms make stable bonds at the regular lattice point. Photoluminescence spectra results also illustrate that Si-NCs formation in SiNx is an effective method to form deep trap states.

  4. Inorganic Nanocrystals Functionalized Mesoporous Silica Nanoparticles: Fabrication and Enhanced Bio-applications

    Directory of Open Access Journals (Sweden)

    Tiancong Zhao

    2017-12-01

    Full Text Available Mesoporous SiO2 nanoparticles (MSNs are one of the most promising materials for bio-related applications due to advantages such as good biocompatibility, tunable mesopores, and large pore volume. However, unlike the inorganic nanocrystals with abundant physical properties, MSNs alone lack functional features. Thus, they are not sufficiently suitable for bio-applications that require special functions. Consequently, MSNs are often functionalized by incorporating inorganic nanocrystals, which provide a wide range of intriguing properties. This review focuses on inorganic nanocrystals functionalized MSNs, both their fabrication and bio-applications. Some of the most utilized methods for coating mesoporous silica (mSiO2 on nanoparticles were summarized. Magnetic, fluorescence and photothermal inorganic nanocrystals functionalized MSNs were taken as examples to demonstrate the bio-applications. Furthermore, asymmetry of MSNs and their effects on functions were also highlighted.

  5. Sorting fluorescent nanocrystals with DNA

    Energy Technology Data Exchange (ETDEWEB)

    Gerion, Daniele; Parak, Wolfgang J.; Williams, Shara C.; Zanchet, Daniela; Micheel, Christine M.; Alivisatos, A. Paul

    2001-12-10

    Semiconductor nanocrystals with narrow and tunable fluorescence are covalently linked to oligonucleotides. These biocompounds retain the properties of both nanocrystals and DNA. Therefore, different sequences of DNA can be coded with nanocrystals and still preserve their ability to hybridize to their complements. We report the case where four different sequences of DNA are linked to four nanocrystal samples having different colors of emission in the range of 530-640 nm. When the DNA-nanocrystal conjugates are mixed together, it is possible to sort each type of nanoparticle using hybridization on a defined micrometer -size surface containing the complementary oligonucleotide. Detection of sorting requires only a single excitation source and an epifluorescence microscope. The possibility of directing fluorescent nanocrystals towards specific biological targets and detecting them, combined with their superior photo-stability compared to organic dyes, opens the way to improved biolabeling experiments, such as gene mapping on a nanometer scale or multicolor microarray analysis.

  6. X-ray absorption spectroscopy study on SiC-side interface structure of SiO2–SiC formed by thermal oxidation in dry oxygen

    Science.gov (United States)

    Isomura, Noritake; Kosaka, Satoru; Kataoka, Keita; Watanabe, Yukihiko; Kimoto, Yasuji

    2018-06-01

    Extended X-ray absorption fine structure (EXAFS) spectroscopy is demonstrated to measure the fine atomic structure of SiO2–SiC interfaces. The SiC-side of the interface can be measured by fabricating thin SiO2 films and using SiC-selective EXAFS measurements. Fourier transforms of the oscillations of the EXAFS spectra correspond to radial-structure functions and reveal a new peak of the first nearest neighbor of Si for m-face SiC, which does not appear in measurements of the Si-face. This finding suggests that the m-face interface could include a structure with shorter Si–C distances. Numerical calculations provide additional support for this finding.

  7. Influence of the doping type and level on the morphology of porous Si formed by galvanic etching

    Energy Technology Data Exchange (ETDEWEB)

    Pyatilova, O. V., E-mail: 5ilova87@gmail.com; Gavrilov, S. A.; Shilyaeva, Yu. I. [Zelenograd, National Research University of Electronic Technology (MIET) (Russian Federation); Pavlov, A. A. [Russian Academy of Sciences, Institute of Nanotechnology of Microelectronics (Russian Federation); Shaman, Yu. P. [Zelenograd, Scientific-Manufacturing Complex “Technological Centre” MIET (Russian Federation); Dudin, A. A. [Russian Academy of Sciences, Institute of Nanotechnology of Microelectronics (Russian Federation)

    2017-02-15

    The formation of porous silicon (por-Si) layers by the galvanic etching of single-crystal Si samples (doped with boron or phosphorus) in an HF/C{sub 2}H{sub 5}OH/H{sub 2}O{sub 2} solution is investigated. The por-Si layers are analyzed by the capillary condensation of nitrogen and scanning electron microscopy (SEM). The dependences of the morphological characteristics of por-Si (pore diameter, specific surface area, pore volume, and thickness of the pore walls), which determine the por-Si combustion kinetics, on the dopant type and initial wafer resistivity are established.

  8. Improved size distribution control of silicon nanocrystals in a spatially confined remote plasma

    NARCIS (Netherlands)

    Dogan, I.; Westerman, R. H. J.; M. C. M. van de Sanden,

    2015-01-01

    This work demonstrates how to improve the size distribution of silicon nanocrystals (Si-NCs) synthesized in a remote plasma, in which the flow dynamics and the particular chemistry initially resulted in the formation of small (2-10 nm) and large (50-120 nm) Si-NCs. Plasma consists of two regions: an

  9. Enhanced apatite-forming ability and antibacterial activity of porous anodic alumina embedded with CaO-SiO2-Ag2O bioactive materials.

    Science.gov (United States)

    Ni, Siyu; Li, Xiaohong; Yang, Pengan; Ni, Shirong; Hong, Feng; Webster, Thomas J

    2016-01-01

    In this study, to provide porous anodic alumina (PAA) with bioactivity and anti-bacterial properties, sol-gel derived bioactive CaO-SiO2-Ag2O materials were loaded onto and into PAA nano-pores (termed CaO-SiO2-Ag2O/PAA) by a sol-dipping method and subsequent calcination of the gel-glasses. The in vitro apatite-forming ability of the CaO-SiO2-Ag2O/PAA specimens was evaluated by soaking them in simulated body fluid (SBF). The surface microstructure and chemical property before and after soaking in SBF were characterized. Release of ions into the SBF was also measured. In addition, the antibacterial properties of the samples were tested against Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus). The results showed that CaO-SiO2-Ag2O bioactive materials were successfully decorated onto and into PAA nano-pores. In vitro SBF experiments revealed that the CaO-SiO2-Ag2O/PAA specimens dramatically enhanced the apatite-forming ability of PAA in SBF and Ca, Si and Ag ions were released from the samples in a sustained and slow manner. Importantly, E. coli and S. aureus were both killed on the CaO-SiO2-Ag2O/PAA (by 100%) samples compared to PAA controls after 3 days of culture. In summary, this study demonstrated that the CaO-SiO2-Ag2O/PAA samples possess good apatite-forming ability and high antibacterial activity causing it to be a promising bioactive coating candidate for implant materials for orthopedic applications. Copyright © 2015 Elsevier B.V. All rights reserved.

  10. Inhibition of palm oil oxidation by zeolite nanocrystals.

    Science.gov (United States)

    Tan, Kok-Hou; Awala, Hussein; Mukti, Rino R; Wong, Ka-Lun; Rigaud, Baptiste; Ling, Tau Chuan; Aleksandrov, Hristiyan A; Koleva, Iskra Z; Vayssilov, Georgi N; Mintova, Svetlana; Ng, Eng-Poh

    2015-05-13

    The efficiency of zeolite X nanocrystals (FAU-type framework structure) containing different extra-framework cations (Li(+), Na(+), K(+), and Ca(2+)) in slowing the thermal oxidation of palm oil is reported. The oxidation study of palm oil is conducted in the presence of zeolite nanocrystals (0.5 wt %) at 150 °C. Several characterization techniques such as visual analysis, colorimetry, rheometry, total acid number (TAN), FT-IR spectroscopy, (1)H NMR spectroscopy, and Karl Fischer analyses are applied to follow the oxidative evolution of the oil. It was found that zeolite nanocrystals decelerate the oxidation of palm oil through stabilization of hydroperoxides, which are the primary oxidation product, and concurrently via adsorption of the secondary oxidation products (alcohols, aldehydes, ketones, carboxylic acids, and esters). In addition to the experimental results, periodic density functional theory (DFT) calculations are performed to elucidate further the oxidation process of the palm oil in the presence of zeolite nanocrystals. The DFT calculations show that the metal complexes formed with peroxides are more stable than the complexes with alkenes with the same ions. The peroxides captured in the zeolite X nanocrystals consequently decelerate further oxidation toward formation of acids. Unlike the monovalent alkali metal cations in the zeolite X nanocrystals (K(+), Na(+), and Li(+)), Ca(2+) reduced the acidity of the oil by neutralizing the acidic carboxylate compounds to COO(-)(Ca(2+))1/2 species.

  11. Characteristic electron energy loss spectra in SiC buried layers formed by C+ implantation into crystalline silicon

    International Nuclear Information System (INIS)

    Yan Hui; Chen Guanghua; Kwok, R.W.M.

    1998-01-01

    SiC buried layers were synthesized by a metal vapor vacuum arc ion source, with C + ions implanted into crystalline Si substrates. According to X-ray photoelectron spectroscopy, the characteristic electron energy loss spectra of the SiC buried layers were studied. It was found that the characteristic electron energy loss spectra depend on the profiles of the carbon content, and correlate well with the order of the buried layers

  12. Simulation, microstructure and microhardness of the nano-SiC coating formed on Al surface via laser shock processing

    International Nuclear Information System (INIS)

    Cui, C.Y.; Cui, X.G.; Zhao, Q.; Ren, X.D.; Zhou, J.Z.; Liu, Z.; Wang, Y.M.

    2014-01-01

    Highlights: • Nano-SiC coating is successfully fabricated on pure Al surface via LSPC. • Movement states of the nano-SiC particles are analyzed by FEM. • Formation mechanism of the nano-SiC coating is put forward and discussed. • Microhardness of the Al is significantly improved due to the nano-SiC coating. - Abstract: A novel method, laser shock processing coating (LSPC), has been developed to fabricate a particle-reinforced coating based on laser shock processing (LSP). In this study, a nano-SiC coating is successfully prepared on pure Al surface via LSPC. The surface and cross section morphologies as well as the compositions of nano-SiC coating are investigated. Moreover, a finite element method (FEM) is employed to clarify the formation process of nano-SiC coating. On the basis of the above analyzed results, a possible formation mechanism of the nano-SiC coating is tentatively put forward and discussed. Furthermore, the nano-SiC coating shows superior microhardness over the Al substrate

  13. Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors.

    Science.gov (United States)

    Kim, David K; Lai, Yuming; Diroll, Benjamin T; Murray, Christopher B; Kagan, Cherie R

    2012-01-01

    Colloidal semiconductor nanocrystals are emerging as a new class of solution-processable materials for low-cost, flexible, thin-film electronics. Although these colloidal inks have been shown to form single, thin-film field-effect transistors with impressive characteristics, the use of multiple high-performance nanocrystal field-effect transistors in large-area integrated circuits has not been shown. This is needed to understand and demonstrate the applicability of these discrete nanocrystal field-effect transistors for advanced electronic technologies. Here we report solution-deposited nanocrystal integrated circuits, showing nanocrystal integrated circuit inverters, amplifiers and ring oscillators, constructed from high-performance, low-voltage, low-hysteresis CdSe nanocrystal field-effect transistors with electron mobilities of up to 22 cm(2) V(-1) s(-1), current modulation >10(6) and subthreshold swing of 0.28 V dec(-1). We fabricated the nanocrystal field-effect transistors and nanocrystal integrated circuits from colloidal inks on flexible plastic substrates and scaled the devices to operate at low voltages. We demonstrate that colloidal nanocrystal field-effect transistors can be used as building blocks to construct complex integrated circuits, promising a viable material for low-cost, flexible, large-area electronics.

  14. Patterning nanocrystals using DNA

    Energy Technology Data Exchange (ETDEWEB)

    Williams, Shara Carol [Univ. of California, Berkeley, CA (United States)

    2003-01-01

    One of the goals of nanotechnology is to enable programmed self-assembly of patterns made of various materials with nanometer-sized control. This dissertation describes the results of experiments templating arrangements of gold and semiconductor nanocrystals using 2'-deoxyribonucleic acid (DNA). Previously, simple DNA-templated linear arrangements of two and three nanocrystals structures have been made.[1] Here, we have sought to assemble larger and more complex nanostructures. Gold-DNA conjugates with 50 to 100 bases self-assembled into planned arrangements using strands of DNA containing complementary base sequences. We used two methods to increase the complexity of the arrangements: using branched synthetic doublers within the DNA covalent backbone to create discrete nanocrystal groupings, and incorporating the nanocrystals into a previously developed DNA lattice structure [2][3] that self-assembles from tiles made of DNA double-crossover molecules to create ordered nanoparticle arrays. In the first project, the introduction of a covalently-branched synthetic doubler reagent into the backbone of DNA strands created a branched DNA ''trimer.'' This DNA trimer templated various structures that contained groupings of three and four gold nanoparticles, giving promising, but inconclusive transmission electron microscopy (TEM) results. Due to the presence of a variety of possible structures in the reaction mixtures, and due to the difficulty of isolating the desired structures, the TEM and gel electrophoresis results for larger structures having four particles, and for structures containing both 5 and 10 nm gold nanoparticles were inconclusive. Better results may come from using optical detection methods, or from improved sample preparation. In the second project, we worked toward making two-dimensional ordered arrays of nanocrystals. We replicated and improved upon previous results for making DNA lattices, increasing the size of the lattices

  15. First-principles investigation on the composition of Ni-Si precipitates formed in irradiated stainless steels

    Science.gov (United States)

    Chen, Dongyue; Murakami, Kenta; Dohi, Kenji; Nishida, Kenji; Ohnuma, Toshiharu; Soneda, Naoki; Li, Zhengcao; Liu, Li; Sekimura, Naoto

    2017-10-01

    Recent atom probe tomography (APT) study has revealed the complicated nature of Ni-Si precipitates in irradiated stainless steels. Although Ni3Si γ‧ phase has been confirmed under transmission electron microscopy (TEM), the Ni/Si ratio of the precipitates detected by APT is smaller than its theoretical value 3. An interpretation of the APT results is provided in this work by considering the lattice defects in the Ni3Si γ‧ phase. Using first principles calculations, Si substitutions on Ni sites were found to be the most thermodynamically stable among all the single defects considered here. Although two such substitutional defects are repulsive to each other, the repulsion decreases quickly as their separation distance grows. By keeping a large enough distance between each other, multiple Si substitutions can appear at high densities in the γ‧ phase, which can be one important contributor to the small Ni/Si atom ratio in Ni-Si precipitates observed by APT.

  16. Le luxe publié au dix-huitième siècle : questions de formes

    Directory of Open Access Journals (Sweden)

    Audrey Provost

    2011-04-01

    Full Text Available Parmi la multitude d’ouvrages qui traitent du luxe au xviiie siècle, deux  titres se signalent par une similitude frappante de contenu : Le comte de Valmont de Gérard et Le monarque accompli de Lanjuinais, publiés en 1774. Leur critique du luxe s’appuie en effet sur les mêmes citations, les mêmes morceaux célèbres, les mêmes formules frappantes de Montesquieu, Rousseau ou Helvétius. à se pencher sur les conditions de publication et les profils des deux auteurs, on se rend compte qu’il s’agit pourtant de deux ouvrages se situant aux antipodes l’un de l’autre au sein de l’espace de l’imprimé du xviiie siècle, mais aussi dans l’historiographie, roman apologétique s’inscrivant dans l’orthodoxie d’Ancien Régime pour l’un, « livre philosophique » considéré comme exemplaire d’une critique du luxe subversive pour l’autre. C’est en analysant de plus près les dispositifs d’écriture et l’usage des citations que l’on saisit la production de sens très contrastés à partir d’un matériau similaire.The Publication of Luxury in the Eighteenth Century: a Question of FormAmong the many eighteenth-century works on luxury, two stand out for their striking resemblances: Le comte de Valmont by Gérard and Le monarque accompli by Lanjuinais, both published in 1774. Both criticize luxury by referring to the same quotations, the same famous passages, the same salient sentences by Montesquieu, Rousseau or Helvétius. Nevertheless, when one examines these writers’ publishing conditions and authorial figures, one is forced to acknowledge that these books are completely different and belong to distinct print cultures and historiographic traditions: one is an epistolary novel typical of the Old Regime’s orthodoxy; the other is a “philosophical book” that exemplifies more subversive critiques of luxury. A detailed analysis of their writing styles and of their use of quotations reveals how very

  17. Engineering Plasmonic Nanocrystal Coupling through Template-Assisted Self-Assembly

    Science.gov (United States)

    Greybush, Nicholas J.

    The construction of materials from nanocrystal building blocks represents a powerful new paradigm for materials design. Just as nature's materials orchestrate intricate combinations of atoms from the library of the periodic table, nanocrystal "metamaterials" integrate individual nanocrystals into larger architectures with emergent collective properties. The individual nanocrystal "meta-atoms" that make up these materials are themselves each a nanoscale atomic system with tailorable size, shape, and elemental composition, enabling the creation of hierarchical materials with predesigned structure at multiple length scales. However, an improved fundamental understanding of the interactions among individual nanocrystals is needed in order to translate this structural control into enhanced functionality. The ability to form precise arrangements of nanocrystals and measure their collective properties is therefore essential for the continued development of nanocrystal metamaterials. In this dissertation, we utilize template-assisted self-assembly and spatially-resolved spectroscopy to form and characterize individual nanocrystal oligomers. At the intersection of "top-down" and "bottom-up" nanoscale patterning schemes, template-assisted self-assembly combines the design freedom of lithography with the chemical control of colloidal synthesis to achieve unique nanocrystal configurations. Here, we employ shape-selective templates to assemble new plasmonic structures, including heterodimers of Au nanorods and upconversion phosphors, a series of hexagonally-packed Au nanocrystal oligomers, and triangular formations of Au nanorods. Through experimental analysis and numerical simulation, we elucidate the means through which inter-nanocrystal coupling imparts collective optical properties to the plasmonic assemblies. Our self-assembly and measurement strategy offers a versatile platform for exploring optical interactions in a wide range of material systems and application areas.

  18. Doped and codoped silicon nanocrystals: The role of surfaces and interfaces

    Science.gov (United States)

    Marri, Ivan; Degoli, Elena; Ossicini, Stefano

    2017-12-01

    Si nanocrystals have been extensively studied because of their novel properties and their potential applications in electronic, optoelectronic, photovoltaic, thermoelectric and biological devices. These new properties are achieved through the combination of the quantum confinement of carriers and the strong influence of surface chemistry. As in the case of bulk Si the tuning of the electronic, optical and transport properties is related to the possibility of doping, in a controlled way, the nanocrystals. This is a big challenge since several studies have revealed that doping in Si nanocrystals differs from the one of the bulk. Theory and experiments have underlined that doping and codoping are influenced by a large number of parameters such as size, shape, passivation and chemical environment of the silicon nanocrystals. However, the connection between these parameters and dopant localization as well as the occurrence of self-purification effects are still not clear. In this review we summarize the latest progress in this fascinating research field considering free-standing and matrix-embedded Si nanocrystals both from the theoretical and experimental point of view, with special attention given to the results obtained by ab-initio calculations and to size-, surface- and interface-induced effects.

  19. PEG/SiO2–Al2O3 hybrid form-stable phase change materials with enhanced thermal conductivity

    International Nuclear Information System (INIS)

    Tang, Bingtao; Wu, Cheng; Qiu, Meige; Zhang, Xiwen; Zhang, Shufen

    2014-01-01

    The thermal conductivity of form-stable PEG/SiO 2 phase change material (PCM) was enhanced by in situ doping of Al 2 O 3 using an ultrasound-assisted sol–gel method. Fourier transform infrared spectroscopy (FT-IR) was used to characterize the structure, and the crystal performance was characterized by the X-ray diffraction (XRD). Differential scanning calorimetry (DSC) and thermogravimetric analyzer (TGA) were used to determine the thermal properties. The phase change enthalpy of PEG/SiO 2 –Al 2 O 3 reached 124 J g −1 , and thermal conductivity improved by 12.8% for 3.3 wt% Al 2 O 3 in the PCM compared with PEG/SiO 2 . The hybrid PCM has excellent thermal stability and form-stable effects. - Highlights: • The PEG/SiO 2 –Al 2 O 3 hybrid form-stable phase change material (PCM) was obtained through the sol–gel method. • The inexpensive aluminum nitrate and tetraethyl orthosilicate were used as sol precursors. • This organic–inorganic hybrid process can effectively enhance the thermal conductivity of PCMs. • The PCM exhibited high thermal stability and excellent form-stable effects

  20. PEG/SiO{sub 2}–Al{sub 2}O{sub 3} hybrid form-stable phase change materials with enhanced thermal conductivity

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Bingtao, E-mail: tangbt@dlut.edu.cn; Wu, Cheng; Qiu, Meige; Zhang, Xiwen; Zhang, Shufen

    2014-03-01

    The thermal conductivity of form-stable PEG/SiO{sub 2} phase change material (PCM) was enhanced by in situ doping of Al{sub 2}O{sub 3} using an ultrasound-assisted sol–gel method. Fourier transform infrared spectroscopy (FT-IR) was used to characterize the structure, and the crystal performance was characterized by the X-ray diffraction (XRD). Differential scanning calorimetry (DSC) and thermogravimetric analyzer (TGA) were used to determine the thermal properties. The phase change enthalpy of PEG/SiO{sub 2}–Al{sub 2}O{sub 3} reached 124 J g{sup −1}, and thermal conductivity improved by 12.8% for 3.3 wt% Al{sub 2}O{sub 3} in the PCM compared with PEG/SiO{sub 2}. The hybrid PCM has excellent thermal stability and form-stable effects. - Highlights: • The PEG/SiO{sub 2}–Al{sub 2}O{sub 3} hybrid form-stable phase change material (PCM) was obtained through the sol–gel method. • The inexpensive aluminum nitrate and tetraethyl orthosilicate were used as sol precursors. • This organic–inorganic hybrid process can effectively enhance the thermal conductivity of PCMs. • The PCM exhibited high thermal stability and excellent form-stable effects.

  1. Reinforcement of 2124 Al alloy with low micron SiC and nano Al2O3 via solid-state forming

    CSIR Research Space (South Africa)

    Gxowa, Z

    2015-07-01

    Full Text Available A powder metallurgical process was used to fabricate Metal Matrix Composites (MMCs). A 2124 aluminium alloy was reinforced with 5 and 10 vol. % of Al2O3 (40-70nm) to form Metal Matrix Nano Composites (MMNCs) as well as 10 and 15 vol. % of SiC (1...

  2. Raman Spectroscopy of SiO{sub 2}–Na{sub 2}O–Al{sub 2}O{sub 3}–B{sub 2}O{sub 3} glass doped with Nd{sup 3+} and CdS nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Serqueira, E.O.; Dantas, N.O. [Laboratório de Novos Materiais Isolantes e Semicondutores (LNMIS), Instituto de Física, Universidade Federal de Uberlândia, Uberlândia, MG 38400-902 (Brazil); Anjos, V. [Grupo de Espectroscopia de Materiais, Departamento de Física, ICE – UFJF, Campus Universitário, Juiz de Fora, MG 36036-330 (Brazil); Bell, M.J.V., E-mail: mjvbell@yahoo.com.br [Grupo de Espectroscopia de Materiais, Departamento de Física, ICE – UFJF, Campus Universitário, Juiz de Fora, MG 36036-330 (Brazil)

    2014-01-05

    Highlights: • The formation of CdS nanocrystals in the glassy host is shown by Raman measurements. • Nd{sub 2}O{sub 3} modifies the growth of CdS nanocrystals in the SNAB glass. • Nd{sup 3+} ions are not incorporated inside the semiconductor nanocrystals. -- Abstract: We report the Raman spectroscopic characterization of a SNAB glass system doped with neodymium and CdS nanocrystals and fabricated by the fusion process. Raman spectra revealed CdS nanocrystals in the glass host and bands associated with Si–O vibrational modes with five structural configurations, boroxol modes of B{sub 2}O{sub 3}, Al–O and Cd–S vibrational modes. Additionally, Nd{sub 2}O{sub 3} modifies the growth of CdS nanocrystals in the SNAB glass and Nd{sup 3+} ions are not incorporated inside the semiconductor nanocrystals.

  3. Structural phase transitions in niobium oxide nanocrystals

    Science.gov (United States)

    Yuvakkumar, R.; Hong, Sun Ig

    2015-09-01

    Niobium oxide nanocrystals were successfully synthesized employing the green synthesis method. Phase formation, microstructure and compositional properties of 1, 4 and 7 days incubation treated samples after calcinations at 450 °C were examined using X-ray diffraction, Raman, photoluminescence (PL), infrared, X-ray photoelectron spectra and transmission electron microscopic characterizations. It was observed that phase formation of Nb2O5 nanocrystals was dependent upon the incubation period required to form stable metal oxides. The characteristic results clearly revealed that with increasing incubation and aging, the transformation of cubic, orthorhombic and monoclinic phases were observed. The uniform heating at room temperature (32 °C) and the ligation of niobium atoms due to higher phenolic constituents of utilized rambutan during aging processing plays a vital role in structural phase transitions in niobium oxide nanocrystals. The defects over a period of incubation and the intensities of the PL spectra changing over a period of aging were related to the amount of the defects induced by the phase transition.

  4. Effect of P addition on glass forming ability and soft magnetic properties of melt-spun FeSiBCuC alloy ribbons

    International Nuclear Information System (INIS)

    Xu, J.; Yang, Y.Z.; Li, W.; Chen, X.C.; Xie, Z.W.

    2016-01-01

    The dependency of phosphorous content on the glass forming ability, thermal stability and soft magnetic properties of Fe 83.4 Si 2 B 14−x P x Cu 0.5 C 0.1 (x=0,1,2,3,4) alloys was investigated. The experimental results showed that the substitution of B by P increased the glass forming ability in this alloy system. The Fe 83.4 Si 2 B 10 P 4 Cu 0.5 C 0.1 alloy shows a fully amorphous character. Thermal stability of melt-spun ribbons increases and temperature interval between the first and second crystallization peaks enlarges with the increase of P content. And the saturation magnetic flux density (Bs) shows a slight increase with the increase of P content. The Fe 83.4 Si 2 B 11 P 3 Cu 0.5 C 0.1 nanocrystalline alloy exhibits a high Bs about 200.6 emu/g. The Bs of fully amorphous alloy Fe 83.4 Si 2 B 10 P 4 Cu 0.5 C 0.1 drops dramatically to 172.1 emu/g, which is lower than that of other nanocrystallines. Low material cost and excellent soft magnetic properties make the FeSiBPCuC alloys promise soft magnetic materials for industrial applications. - Highlights: • Partial substituting B by P helps to improve the glass forming ability of the alloy. • The addition of P content reduces the thermal stability and improves heat treatment temperature region for these alloys. • The Fe 83.4 Si 2 B 11 P 3 Cu 0.5 C 0.1 nanocrystalline alloy exhibits a high saturation magnetic density of 200.6 emu/g.

  5. Modified spontaneous emission of silicon nanocrystals embedded in artificial opals

    Science.gov (United States)

    Janda, Petr; Valenta, Jan; Rehspringer, Jean-Luc; Mafouana, Rodrigue R.; Linnros, Jan; Elliman, Robert G.

    2007-10-01

    Si nanocrystals (NCs) were embedded in synthetic silica opals by means of Si-ion implantation or opal impregnation with porous-Si suspensions. In both types of sample photoluminescence (PL) is strongly Bragg-reflection attenuated (up to 75%) at the frequency of the opal stop-band in a direction perpendicular to the (1 1 1) face of the perfect hcp opal structure. Time-resolved PL shows a rich distribution of decay rates, which contains both shorter and longer decay components compared with the ordinary stretched exponential decay of Si NCs. This effect reflects changes in the spontaneous emission rate of Si NCs due to variations in the local density of states of real opal containing defects.

  6. Modified spontaneous emission of silicon nanocrystals embedded in artificial opals

    International Nuclear Information System (INIS)

    Janda, Petr; Valenta, Jan; Rehspringer, Jean-Luc; Mafouana, Rodrigue R; Linnros, Jan; Elliman, Robert G

    2007-01-01

    Si nanocrystals (NCs) were embedded in synthetic silica opals by means of Si-ion implantation or opal impregnation with porous-Si suspensions. In both types of sample photoluminescence (PL) is strongly Bragg-reflection attenuated (up to 75%) at the frequency of the opal stop-band in a direction perpendicular to the (1 1 1) face of the perfect hcp opal structure. Time-resolved PL shows a rich distribution of decay rates, which contains both shorter and longer decay components compared with the ordinary stretched exponential decay of Si NCs. This effect reflects changes in the spontaneous emission rate of Si NCs due to variations in the local density of states of real opal containing defects

  7. Modified spontaneous emission of silicon nanocrystals embedded in artificial opals

    Energy Technology Data Exchange (ETDEWEB)

    Janda, Petr [Department of Chemical Physics and Optics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, 121 16 Prague 2 (Czech Republic); Valenta, Jan [Department of Chemical Physics and Optics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, 121 16 Prague 2 (Czech Republic); Rehspringer, Jean-Luc [Institut de Physique et Chimie des Materiaux de Strasbourg, GMI et GONLO, UMR46 CNRS-ULP-ECPM, 23, rue du Loess, F-67037 Strasbourg (France); Mafouana, Rodrigue R [Institut de Physique et Chimie des Materiaux de Strasbourg, GMI et GONLO, UMR46 CNRS-ULP-ECPM, 23, rue du Loess, F-67037 Strasbourg (France); Linnros, Jan [Laboratory of Material and Semiconductor Physics, Royal Institute of Technology, Electrum 229, 164 21 Kista-Stockholm (Sweden); Elliman, Robert G [Electronic Materials Engineering Department, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT 0200 (Australia)

    2007-10-07

    Si nanocrystals (NCs) were embedded in synthetic silica opals by means of Si-ion implantation or opal impregnation with porous-Si suspensions. In both types of sample photoluminescence (PL) is strongly Bragg-reflection attenuated (up to 75%) at the frequency of the opal stop-band in a direction perpendicular to the (1 1 1) face of the perfect hcp opal structure. Time-resolved PL shows a rich distribution of decay rates, which contains both shorter and longer decay components compared with the ordinary stretched exponential decay of Si NCs. This effect reflects changes in the spontaneous emission rate of Si NCs due to variations in the local density of states of real opal containing defects.

  8. Engineering of lipid-coated PLGA nanoparticles with a tunable payload of diagnostically active nanocrystals for medical imaging.

    Science.gov (United States)

    Mieszawska, Aneta J; Gianella, Anita; Cormode, David P; Zhao, Yiming; Meijerink, Andries; Langer, Robert; Farokhzad, Omid C; Fayad, Zahi A; Mulder, Willem J M

    2012-06-14

    Polylactic-co-glycolic acid (PLGA) based nanoparticles are biocompatible and biodegradable and therefore have been extensively investigated as therapeutic carriers. Here, we engineered diagnostically active PLGA nanoparticles that incorporate high payloads of nanocrystals into their core for tunable bioimaging features. We accomplished this through esterification reactions of PLGA to generate polymers modified with nanocrystals. The PLGA nanoparticles formed from modified PLGA polymers that were functionalized with either gold nanocrystals or quantum dots exhibited favorable features for computed tomography and optical imaging, respectively.

  9. Tuning Confinement in Colloidal Silicon Nanocrystals with Saturated Surface Ligands

    Energy Technology Data Exchange (ETDEWEB)

    Neale, Nathan R [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Carroll, Gerard [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Limpens, Rens [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

    2018-04-16

    The optical properties of silicon nanocrystals (Si NCs) are a subject of intense study and continued debate. In particular, Si NC photoluminescence (PL) properties are known to depend strongly on the surface chemistry, resulting in electron-hole recombination pathways derived from the Si NC band-edge, surface-state defects, or combined NC-conjugated ligand hybrid states. In this Letter, we perform a comparison of three different saturated surface functional groups - alkyls, amides, and alkoxides - on nonthermal plasma-synthesized Si NCs. We find a systematic and size-dependent high-energy (blue) shift in the PL spectrum of Si NCs with amide and alkoxy functionalization relative to alkyl. Time-resolved photoluminescence and transient absorption spectroscopies reveal no change in the excited-state dynamics between Si NCs functionalized with alkyl, amide, or alkoxide ligands, showing for the first time that saturated ligands - not only surface-derived charge-transfer states or hybridization between NC and low-lying ligand orbitals - are responsible for tuning the Si NC optical properties. To explain these PL shifts we propose that the atom bound to the Si NC surface strongly interacts with the Si NC electronic wave function and modulates the Si NC quantum confinement. These results reveal a potentially broadly applicable correlation between the optoelectronic properties of Si NCs and related quantum-confined structures based on the interaction between NC surfaces and the ligand binding group.

  10. Tuning Confinement in Colloidal Silicon Nanocrystals with Saturated Surface Ligands.

    Science.gov (United States)

    Carroll, Gerard M; Limpens, Rens; Neale, Nathan R

    2018-05-09

    The optical properties of silicon nanocrystals (Si NCs) are a subject of intense study and continued debate. In particular, Si NC photoluminescence (PL) properties are known to depend strongly on the surface chemistry, resulting in electron-hole recombination pathways derived from the Si NC band-edge, surface-state defects, or combined NC-conjugated ligand hybrid states. In this Letter, we perform a comparison of three different saturated surface functional groups-alkyls, amides, and alkoxides-on nonthermal plasma-synthesized Si NCs. We find a systematic and size-dependent high-energy (blue) shift in the PL spectrum of Si NCs with amide and alkoxy functionalization relative to alkyl. Time-resolved photoluminescence and transient absorption spectroscopies reveal no change in the excited-state dynamics between Si NCs functionalized with alkyl, amide, or alkoxide ligands, showing for the first time that saturated ligands-not only surface-derived charge-transfer states or hybridization between NC and low-lying ligand orbitals-are responsible for tuning the Si NC optical properties. To explain these PL shifts we propose that the atom bound to the Si NC surface strongly interacts with the Si NC electronic wave function and modulates the Si NC quantum confinement. These results reveal a potentially broadly applicable correlation between the optoelectronic properties of Si NCs and related quantum-confined structures based on the interaction between NC surfaces and the ligand binding group.

  11. Silicon Nanocrystal Synthesis in Microplasma Reactor

    Science.gov (United States)

    Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

    Nanocrystalline silicon particles with grains smaller than 5 nm are widely recognized as a key material in optoelectronic devices, lithium battery electrodes, and bio-medical labels. Another important characteristic is that silicon is an environmentally safe material that is used in numerous silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma-enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. In this study, we explore the possibility of microplasma technologies for efficient production of mono-dispersed nanocrystalline silicon particles on a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using a very-high-frequency (144 MHz) power source in a capillary glass tube with volume of less than 1 μl. Fundamental plasma parameters of the microplasma were characterized using optical emission spectroscopy, which respectively indicated electron density of 1015 cm-3, argon excitation temperature of 5000 K, and rotational temperature of 1500 K. Such high-density non-thermal reactive plasma can decompose silicon tetrachloride into atomic silicon to produce supersaturated silicon vapor, followed by gas-phase nucleation via three-body collision: particle synthesis in high-density plasma media is beneficial for promoting nucleation processes. In addition, further growth of silicon nuclei can be terminated in a short-residence-time reactor. Micro-Raman scattering spectra showed that as-deposited particles are mostly amorphous silicon with a small fraction of silicon nanocrystals. Transmission electron micrography confirmed individual 3-15 nm silicon nanocrystals. Although particles were not mono-dispersed, they were well separated and not coagulated.

  12. Synthesis of Silicon Nanocrystals in Microplasma Reactor

    Science.gov (United States)

    Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

    Nanocrystalline silicon particles with a grain size of at least less than 10 nm are widely recognized as one of the key materials in optoelectronic devices, electrodes of lithium battery, bio-medical labels. There is also important character that silicon is safe material to the environment and easily gets involved in existing silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. We explore the possibility of microplasma technologies for the efficient production of mono-dispersed nanocrystalline silicon particles in a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using very high frequency (VHF = 144 MHz) power source in a capillary glass tube with a volume of less than 1 μ-liter. Fundamental plasma parameters of VHF capacitively coupled microplasma were characterized by optical emission spectroscopy, showing electron density of approximately 1015 cm-3 and rotational temperature of 1500 K, respectively. Such high-density non-thermal reactive plasma has a capability of decomposing silicon tetrachloride into atomic silicon to produce supersaturated atomic silicon vapor, followed by gas phase nucleation via three-body collision. The particle synthesis in high-density plasma media is beneficial for promoting nucleation process. In addition, further growth of silicon nuclei was able to be favorably terminated in a short-residence time reactor. Micro Raman scattering spectrum showed that as-deposited particles were mostly amorphous silicon with small fraction of silicon nanocrystals. Transmission electron micrograph confirmed individual silicon nanocrystals of 3-15 nm size. Although those particles were not mono-dispersed, they were

  13. Biomolecular Assembly of Gold Nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Micheel, Christine Marya [Univ. of California, Berkeley, CA (United States)

    2005-05-20

    Over the past ten years, methods have been developed to construct discrete nanostructures using nanocrystals and biomolecules. While these frequently consist of gold nanocrystals and DNA, semiconductor nanocrystals as well as antibodies and enzymes have also been used. One example of discrete nanostructures is dimers of gold nanocrystals linked together with complementary DNA. This type of nanostructure is also known as a nanocrystal molecule. Discrete nanostructures of this kind have a number of potential applications, from highly parallel self-assembly of electronics components and rapid read-out of DNA computations to biological imaging and a variety of bioassays. My research focused in three main areas. The first area, the refinement of electrophoresis as a purification and characterization method, included application of agarose gel electrophoresis to the purification of discrete gold nanocrystal/DNA conjugates and nanocrystal molecules, as well as development of a more detailed understanding of the hydrodynamic behavior of these materials in gels. The second area, the development of methods for quantitative analysis of transmission electron microscope data, used computer programs written to find pair correlations as well as higher order correlations. With these programs, it is possible to reliably locate and measure nanocrystal molecules in TEM images. The final area of research explored the use of DNA ligase in the formation of nanocrystal molecules. Synthesis of dimers of gold particles linked with a single strand of DNA possible through the use of DNA ligase opens the possibility for amplification of nanostructures in a manner similar to polymerase chain reaction. These three areas are discussed in the context of the work in the Alivisatos group, as well as the field as a whole.

  14. Hot-injection synthesis of Ni-ZnO hybrid nanocrystals with tunable magnetic properties and enhanced photocatalytic activity

    Energy Technology Data Exchange (ETDEWEB)

    Zeng, Deqian; Qiu, Yulong; Chen, Yuanzhi, E-mail: yuanzhi@xmu.edu.cn; Zhang, Qinfu; Liu, Xiang; Peng, Dong-Liang, E-mail: dlpeng@xmu.edu.cn [Xiamen University, Department of Materials Science and Engineering, Fujian Provincial Key Laboratory of Materials Genome, Collaborative Innovation Center of Chemistry for Energy Materials, College of Materials (China)

    2017-04-15

    Magnetic metal-semiconductor hybrid nanocrystals containing ferromagnetic Ni and semiconductor ZnO have been prepared via a hot-injection route. The Ni-ZnO hybrid nanocrystals have a flower-like morphology that consists of Ni inner cores and ZnO petal shells. In spite of their large lattice mismatch, ZnO nanocrystals can still grow on faceted Ni nanocrystals to form stable interfaces. The composition of Ni-ZnO hybrid nanocrystals is readily controlled, and the average size of Ni core is tunable from 25 to 50 nm. Room temperature ferromagnetic properties are observed in these hybrid nanocrystals, and tunable magnetic properties also can be achieved by varying the size of Ni core. The as-prepared Ni-ZnO hybrid nanocrystals exhibit enhanced photocatalytic performance under ultraviolet light illumination as compared to pure ZnO nanocrystals. Furthermore, the superior reusability of hybrid nanocrystals for photocatalytic application is achieved by virtue of their magnetic properties. The facile and efficient seed-mediate strategy is particularly attractive to construct hybrid magnetic-semiconducting heterostructures. The as-obtained Ni-ZnO hybrid nanocrystals offer great potential for various applications due to their combined magnetic and semiconducting properties and low-cost earth-abundant availability.

  15. SAXS and EXAFS studies of ion beam synthesized Au nanocrystals

    International Nuclear Information System (INIS)

    Kluth, P.; Johannessen, B.; Cookson, D.J.; Foran, G.J.; Ridgway, M.C.

    2006-01-01

    We have used small-angle X-ray scattering (SAXS) and extended X-ray absorption fine structure (EXAFS) spectroscopy to investigate Au nanocrystals (NCs) fabricated by high dose ion implantation into thin SiO 2 and subsequent annealing at different temperatures. Size distributions were determined from SAXS and structural parameters were extracted from EXAFS measurements, the latter analyzed as a function of NC size. Increasing implantation dose leads to an increasing average NC size and broadening of the size distribution. A significant size-dependent bond length contraction with respect to bulk material was observed. For samples annealed at 1100 deg. C our analysis suggests that an increased structural disorder is predominantly located at the NC surface. Post-implantation annealing at temperatures of 500 deg. C and 800 deg. C for 1 h in forming gas had no detectable influence on the NC size distribution, however, a significant influence on the structural parameters, in particular increased disorder was observed. This is potentially the result of stress induced disorder due to the different thermal expansion of the NC and matrix materials

  16. Ultrathin highly uniform Ni(Al) germanosilicide layer with modulated B8 type Ni5(SiGe)3 phase formed on strained Si1−xGex layers

    International Nuclear Information System (INIS)

    Liu, Linjie; Xu, Dawei; Jin, Lei; Knoll, Lars; Wirths, Stephan; Nichau, Alexander; Buca, Dan; Mussler, Gregor; Holländer, Bernhard; Zhao, Qing-Tai; Mantl, Siegfried; Feng Di, Zeng; Zhang, Miao

    2013-01-01

    We present a method to form ultrathin highly uniform Ni(Al) germanosilicide layers on compressively strained Si 1−x Ge x substrates and their structural characteristics. The uniform Ni(Al) germanosilicide film is formed with Ni/Al alloy at an optimized temperature of 400 °C with an optimized Al atomic content of 20 at. %. We find only two kinds of grains in the layer. Both grains show orthogonal relationship with modified B8 type phase. The growth plane is identified to be (10-10)-type plane. After germanosilicidation the strain in the rest Si 1−x Ge x layer is conserved, which provides a great advantage for device application

  17. Effect of Si on the glass-forming ability, thermal stability and magnetic properties of Fe-Co-Zr-Mo-W-B alloys

    Energy Technology Data Exchange (ETDEWEB)

    Wang, W.-M. [Institute for Metallic Materials, IFW Dresden, P.O. 270016, Dresden D-01171 (Germany); Key Lab of Liquid Structure and Heredity of Materials, Shandong University, Jinan 250061 (China); Gebert, A. [Institute for Metallic Materials, IFW Dresden, P.O. 270016, Dresden D-01171 (Germany)], E-mail: a.gebert@ifw-dresden.de; Roth, S.; Kuehn, U.; Schultz, L. [Institute for Metallic Materials, IFW Dresden, P.O. 270016, Dresden D-01171 (Germany)

    2008-07-14

    This paper presents investigations on the effect of Si on the glass-forming ability, thermal stability and magnetic properties of the Fe-Co-Zr-Mo-W-B samples (group I: Fe{sub 60}Co{sub 8}Zr{sub 10}Mo{sub 5}W{sub 2}B{sub 15-x}Si{sub x}, 1 {<=} x {<=} 4; group II: Fe{sub 60}Co{sub 8}Zr{sub 10-x}Mo{sub 5}W{sub 2}B{sub 15}Si{sub x}, 0 {<=} x {<=} 4; group III: Fe{sub 60}Co{sub 8}Zr{sub 8}Mo{sub 5}W{sub 2}B{sub 17-x}Si{sub x}, 0 {<=} x {<=} 2) prepared by melt spinning, injection casting, and centrifugal casting methods. It is found that the glass-forming ability (GFA) of the alloys in group I is more deteriorated than that in group II, and that the alloys in group III can be cast into the rods of 1-3 mm diameter without crystalline reflections in their XRD patterns. For the amorphous ribbons and rods, a non-monotonic change of the nearest neighbour distance r{sub 1} with increasing Si content c{sub Si} was detected, which is parallel to that of the glass transition and crystallization temperatures T{sub g} and T{sub x}, but opposite to that of the magnetization at room temperature M{sub RT} and the Curie temperature T{sub c}. This correlation can be interpreted by a structure model presuming that iron atoms appear simultaneously in two types of local structures in the amorphous samples.

  18. From Artificial Atoms to Nanocrystal Molecules: Preparation and Properties of More Complex Nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Charina L; Alivisatos, A Paul

    2009-10-20

    Quantum dots, which have found widespread use in fields such as biomedicine, photovoltaics, and electronics, are often called artificial atoms due to their size-dependent physical properties. Here this analogy is extended to consider artificial nanocrystal molecules, formed from well-defined groupings of plasmonically or electronically coupled single nanocrystals. Just as a hydrogen molecule has properties distinct from two uncoupled hydrogen atoms, a key feature of nanocrystal molecules is that they exhibit properties altered from those of the component nanoparticles due to coupling. The nature of the coupling between nanocrystal atoms and its response to vibrations and deformations of the nanocrystal molecule bonds are of particular interest. We discuss synthetic approaches, predicted and observed physical properties, and prospects and challenges toward this new class of materials.

  19. Microstructure and mechanical properties of hypo/hyper-eutectic Al-Si alloys synthesized using a near-net shape forming technique

    International Nuclear Information System (INIS)

    Gupta, M.; Ling, S.

    1999-01-01

    In the present study, three aluminum-silicon alloys containing 7, 10 and 19 wt % silicon were synthesized using a novel technique commonly known as disintegrated melt deposition technique. The results following processing revealed that a yield of at least 80% can be achieved after defacing the shrinkage cavity from the as-processed ingots. Microstructural characterization studies conducted on the as-processed samples revealed an increase in the volume fraction of porosity with an increase in silicon content. Porosity levels of 1.07, 1.51 and 2.65% attained in the case of Al-7Si, Al-10Si, and Al-19Si alloys indicates the near-net shape forming capability of the disintegrated melt deposition technique. The results of aging studies conducted on the aluminum-silicon alloys revealed similar aging kinetics irrespective of different silicon content. Results of ambient temperature mechanical tests demonstrate an increase in matrix microhardness and 0.2% yield stress and decrease in ductility with an increase in silicon content in aluminum. Furthermore, the results of an attempt to investigate the effect of extrusion on Al-19Si alloy revealed that the extrusion process significantly assists in reducing porosity and improving microstructural uniformity, 0.2% yield strength, ultimate tensile strength and ductility when compared to the as-processed Al-19Si alloy. The results of microstructural characterization and mechanical properties of aluminum-silicon alloys were finally correlated with the amount of silicon in aluminum and secondary processing technique. (orig.)

  20. Nuclear magnetic relaxation studies of semiconductor nanocrystals and solids

    Energy Technology Data Exchange (ETDEWEB)

    Sachleben, Joseph Robert [Lawrence Berkeley Lab., CA (United States); California Univ., Berkeley, CA (United States). Dept. of Chemistry

    1993-09-01

    Semiconductor nanocrystals, small biomolecules, and 13C enriched solids were studied through the relaxation in NMR spectra. Surface structure of semiconductor nanocrystals (CdS) was deduced from high resolution 1H and 13C liquid state spectra of thiophenol ligands on the nanocrystal surfaces. The surface coverage by thiophenol was found to be low, being 5.6 and 26% for nanocrystal radii of 11.8 and 19.2 Å. Internal motion is estimated to be slow with a correlation time > 10-8 s-1. The surface thiophenol ligands react to form a dithiophenol when the nanocrystals were subjected to O2 and ultraviolet. A method for measuring 14N-1H J-couplings is demonstrated on pyridine and the peptide oxytocin; selective 2D T1 and T2 experiments are presented for measuring relaxation times in crowded spectra with overlapping peaks in 1D, but relaxation effects interfere. Possibility of carbon-carbon cross relaxation in 13C enriched solids is demonstrated by experiments on zinc acetate and L-alanine.

  1. The role of nitrogen in luminescent Si nanoprecipitate formation during annealing of Si ion-implanted SiO sub 2 layers

    CERN Document Server

    Kachurin, G A; Zhuravlev, K S; Ruault, M O

    2001-01-01

    SiO sub 2 layers were implanted with 25 keV Si sup + and 13 keV N sup + ions with the doses of (1-4) x 10 sup 1 sup 6 cm sup - sup 2 and (0.2-2) x 10 sup 1 sup 6 cm sup - sup 2 , respectively. Then the samples were annealed at 900-1100 deg C to form luminescent silicon nanoprecipitates. The nitrogen effect on the process is controlled by photoluminescence spectra. It is found out that the photoluminescence intensity increases considerably at the appropriate ratio between silicon and nitrogen. It has been concluded that the interaction of nitrogen with excessive silicon results in increasing the number of precipitation centers. This raises the nanocrystals number and reduces their mean size

  2. Depth distribution of Frank loop defects formed in ion-irradiated stainless steel and its dependence on Si addition

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Dongyue, E-mail: dychen@safety.n.t.u-tokyo.ac.jp [The University of Tokyo, Department of Nuclear Engineering and Management, School of Engineering, 7-3-1 Hongo Bunkyo-ku, Tokyo 113-8656 (Japan); Murakami, Kenta [The University of Tokyo, Nuclear Professional School, School of Engineering, 2-22 Shirakata-Shirane, Tokai-mura, Ibaraki 319-1188 (Japan); Dohi, Kenji; Nishida, Kenji; Soneda, Naoki [Central Research Institute of Electric Power Industry, 2-11-1 Iwado-kita, Komae, Tokyo 201-8511 (Japan); Li, Zhengcao, E-mail: zcli@tsinghua.edu.cn [Tsinghua University, School of Materials Science and Engineering, Beijing 100084 (China); Liu, Li; Sekimura, Naoto [The University of Tokyo, Department of Nuclear Engineering and Management, School of Engineering, 7-3-1 Hongo Bunkyo-ku, Tokyo 113-8656 (Japan)

    2015-12-15

    Although heavy ion irradiation is a good tool to simulate neutron irradiation-induced damages in light water reactor, it produces inhomogeneous defect distribution. Such difference in defect distribution brings difficulty in comparing the microstructure evolution and mechanical degradation between neutron and heavy ion irradiation, and thus needs to be understood. Stainless steel is the typical structural material used in reactor core, and could be taken as an example to study the inhomogeneous defect depth distribution in heavy ion irradiation and its influence on the tested irradiation hardening by nano-indentation. In this work, solution annealed stainless steel model alloys are irradiated by 3 MeV Fe{sup 2+} ions at 400 °C to 3 dpa to produce Frank loops that are mainly interstitial in nature. The silicon content of the model alloys is also tuned to change point defect diffusion, so that the loop depth distribution influenced by diffusion along the irradiation beam direction could be discussed. Results show that in low Si (0% Si) and base Si (0.42% Si) samples the depth distribution of Frank loop density quite well matches the dpa profile calculated by the SRIM code, but in high Si sample (0.95% Si), the loop number density in the near-surface region is very low. One possible explanation could be Si’s role in enhancing the effective vacancy diffusivity, promoting recombination and thus suppressing interstitial Frank loops, especially in the near-surface region, where vacancies concentrate. By considering the loop depth distribution, the tested irradiation hardening is successfully explained by the Orowan model. A hardening coefficient of around 0.30 is obtained for all the three samples. This attempt in interpreting hardening results may make it easier to compare the mechanical degradation between different irradiation experiments.

  3. Second- and third-harmonic generation as a local probe for nanocrystal-doped polymer materials with a suppressed optical breakdown threshold

    Science.gov (United States)

    Konorov, S. O.; Fedotov, A. B.; Ivanov, A. A.; Alfimov, M. V.; Zabotnov, S. V.; Naumov, A. N.; Sidorov-Biryukov, D. A.; Podshivalov, A. A.; Petrov, A. N.; Fornarini, L.; Carpanese, M.; Ferrante, G.; Fantoni, R.; Zheltikov, A. M.

    2003-09-01

    Second- and third-harmonic generation processes are shown to allow the detection of absorptive agglomerates of nanocrystals in transparent materials and the visualization of optical breakdown in nanocomposite materials. Correlations between laser-induced breakdown and the behavior of the second- and third-harmonic signals produced in SiC/PMMA nanocomposite films are studied. The potential of second- and third-harmonic generation for the on-line visualization of laser breakdown in nanocomposite polymer materials is revealed, with the ablative material removal being monitored by the decay of the second- and third-harmonic signals. The second and third harmonics generated around the optical breakdown threshold by 75-fs pulses of 1.25-μm Cr:forsterite laser radiation are respectively more than two and four orders of magnitude more intense than the second and third harmonics produced under identical conditions by 40-ps pulses of a Nd:YAG laser. The breakdown threshold for PMMA films doped with 10-20-nm SiC nanocrystals forming absorptive agglomerates are demonstrated to be more than an order of magnitude lower than the breakdown threshold for crystalline SiC and about an order of magnitude lower than that for nondoped PMMA films.

  4. Coulomb gap triptych in a periodic array of metal nanocrystals.

    Science.gov (United States)

    Chen, Tianran; Skinner, Brian; Shklovskii, B I

    2012-09-21

    The Coulomb gap in the single-particle density of states (DOS) is a universal consequence of electron-electron interaction in disordered systems with localized electron states. Here we show that in arrays of monodisperse metallic nanocrystals, there is not one but three identical adjacent Coulomb gaps, which together form a structure that we call a "Coulomb gap triptych." We calculate the DOS and the conductivity in two- and three-dimensional arrays using a computer simulation. Unlike in the conventional Coulomb glass models, in nanocrystal arrays the DOS has a fixed width in the limit of large disorder. The Coulomb gap triptych can be studied via tunneling experiments.

  5. Fundamental absorption edge of NiO nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Sokolov, V.I., E-mail: visokolov@imp.uran.ru [Institute of Metal Physics, Ural Branch of RAS, S. Kovalevskaya Street 18, 620990 Yekaterinburg (Russian Federation); Druzhinin, A.V. [Institute of Metal Physics, Ural Branch of RAS, S. Kovalevskaya Street 18, 620990 Yekaterinburg (Russian Federation); Kim, G.A. [Institute of Organic Synthesis Ural Branch of RAS, S. Kovalevskaya Street 20, 620990 Yekaterinburg (Russian Federation); Gruzdev, N.B.; Yermakov, A.Ye.; Uimin, M.A.; Byzov, I.V.; Shchegoleva, N.N.; Vykhodets, V.B.; Kurennykh, T.E. [Institute of Metal Physics, Ural Branch of RAS, S. Kovalevskaya Street 18, 620990 Yekaterinburg (Russian Federation)

    2013-12-01

    NiO nanocrystals with the average size of 5, 10 and 25 nm were synthesized by gas-condensation method. The well-defined increase of the optical density D near the fundamental absorption edge of NiO nanocrystals in the range of 3.5–4.0 eV observed after the annealing in air is caused by the oxygen content growth. It is the direct experimental evidence of the fact that p—d charge transfer transitions form the fundamental absorption edge.

  6. Fundamental absorption edge of NiO nanocrystals

    International Nuclear Information System (INIS)

    Sokolov, V.I.; Druzhinin, A.V.; Kim, G.A.; Gruzdev, N.B.; Yermakov, A.Ye.; Uimin, M.A.; Byzov, I.V.; Shchegoleva, N.N.; Vykhodets, V.B.; Kurennykh, T.E.

    2013-01-01

    NiO nanocrystals with the average size of 5, 10 and 25 nm were synthesized by gas-condensation method. The well-defined increase of the optical density D near the fundamental absorption edge of NiO nanocrystals in the range of 3.5–4.0 eV observed after the annealing in air is caused by the oxygen content growth. It is the direct experimental evidence of the fact that p—d charge transfer transitions form the fundamental absorption edge

  7. Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

    International Nuclear Information System (INIS)

    Choi, Sangmoo; Yang, Hyundeok; Chang, Man; Baek, Sungkweon; Hwang, Hyunsang; Jeon, Sanghun; Kim, Juhyung; Kim, Chungwoo

    2005-01-01

    Silicon nitride with silicon nanocrystals formed by low-energy silicon plasma immersion ion implantation has been investigated as a charge trapping layer of a polycrystalline silicon-oxide-nitride-oxide-silicon-type nonvolatile memory device. Compared with the control sample without silicon nanocrystals, silicon nitride with silicon nanocrystals provides excellent memory characteristics, such as larger width of capacitance-voltage hysteresis, higher program/erase speed, and lower charge loss rate at elevated temperature. These improved memory characteristics are derived by incorporation of silicon nanocrystals into the charge trapping layer as additional accessible charge traps with a deeper effective trap energy level

  8. Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

    International Nuclear Information System (INIS)

    Pi, X.D.; Coleman, P.G.; Harding, R.; Davies, G.; Gwilliam, R.M.; Sealy, B.J.

    2003-01-01

    Positron annihilation spectroscopy has been employed to study changes in the interface region between nanocrystalline Si and SiO 2 , following annealing between 400 deg. C and 900 deg. C in nitrogen or oxygen. With the support of photoluminescence spectroscopy we find that nitrogen and oxygen are trapped in voids at the interface at low temperatures. At temperatures above 700 deg. C both nitrogen and oxygen react with Si nanocrystals, and the resulting volume increase introduces stress in the SiO 2 matrix which is relaxed by the shrinkage of its intrinsic open volume. Oxygen appears to enhance Si diffusion in SiO 2 so that the agglomeration of Si nanocrystals occurs more readily during annealing in oxygen than in nitrogen

  9. PECVD Tekniği ile Büyütülmüş İnce Filmlerde Oluşan Ge ve SiGe Nanokristallerin Geçirgen Elektron Mikroskobu (TEM) ,Raman ve Fotoışıma Spektroskopisi Teknikleri ile İncelenmesi

    OpenAIRE

    Şahin, Bünyamin; Ağan, Sedat

    2009-01-01

    We report an experimental study, optical properties of Ge and SiGe nanocrystals in SiOx structures are investigated by using Transmission Electron Microscopy (TEM), Raman and Photlüminescence Spectroscopy techniques. Ge nanocrystals in silicon oxide thin films have been grown with different annealing time by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique. The aim of our work is to determine size and size distiributions Ge, SiGe nanocrystals in SiOx martix due to annealing process...

  10. Predicting Nanocrystal Shape through Consideration of Surface-Ligand Interactions

    KAUST Repository

    Bealing, Clive R.

    2012-03-27

    Density functional calculations for the binding energy of oleic acid-based ligands on Pb-rich {100} and {111} facets of PbSe nanocrystals determine the surface energies as a function of ligand coverage. Oleic acid is expected to bind to the nanocrystal surface in the form of lead oleate. The Wulff construction predicts the thermodynamic equilibrium shape of the PbSe nanocrystals. The equilibrium shape is a function of the ligand surface coverage, which can be controlled by changing the concentration of oleic acid during synthesis. The different binding energy of the ligand on the {100} and {111} facets results in different equilibrium ligand coverages on the facets, and a transition in the equilibrium shape from octahedral to cubic is predicted when increasing the ligand concentration during synthesis. © 2012 American Chemical Society.

  11. Structural and optical characterization of self-assembled Ge nanocrystal layers grown by plasma-enhanced chemical vapor deposition

    NARCIS (Netherlands)

    Saeed, S.; Buters, F.; Dohnalova, K.; Wosinski, L.; Gregorkiewicz, T.

    2014-01-01

    We present a structural and optical study of solid-state dispersions of Ge nanocrystals prepared by plasma-enhanced chemical vapor deposition. Structural analysis shows the presence of nanocrystalline germanium inclusions embedded in an amorphous matrix of Si-rich SiO2. Optical characterization

  12. Adsorption behavior and current-voltage characteristics of CdSe nanocrystals on hydrogen-passivated silicon

    DEFF Research Database (Denmark)

    Walzer, Karsten; Quaade, Ulrich; Ginger, D.S.

    2002-01-01

    Using scanning tunneling microscopy and spectroscopy we have studied both the geometric distribution and the conduction properties of organic shell capped CdSe nanocrystals adsorbed on hydrogen-passivated Si(100). At submonolayer concentrations, the nanocrystal distribution on the surface was found...... found that the current through the MIS junction is limited by the nanocrystals only in one bias direction, while in the other bias direction the current is limited by the semiconducting substrate. This property may be of relevance for the construction of hybrid electronic devices combining semiconductor...

  13. Temperature-Dependent Physical and Memory Characteristics of Atomic-Layer-Deposited RuOx Metal Nanocrystal Capacitors

    Directory of Open Access Journals (Sweden)

    S. Maikap

    2011-01-01

    Full Text Available Physical and memory characteristics of the atomic-layer-deposited RuOx metal nanocrystal capacitors in an n-Si/SiO2/HfO2/RuOx/Al2O3/Pt structure with different postdeposition annealing temperatures from 850–1000°C have been investigated. The RuOx metal nanocrystals with an average diameter of 7 nm and a highdensity of 0.7 × 1012/cm2 are observed by high-resolution transmission electron microscopy after a postdeposition annealing temperature at 1000°C. The density of RuOx nanocrystal is decreased (slightly by increasing the annealing temperatures, due to agglomeration of multiple nanocrystals. The RuO3 nanocrystals and Hf-silicate layer at the SiO2/HfO2 interface are confirmed by X-ray photoelectron spectroscopy. For post-deposition annealing temperature of 1000°C, the memory capacitors with a small equivalent oxide thickness of ~9 nm possess a large hysteresis memory window of >5 V at a small sweeping gate voltage of ±5 V. A promising memory window under a small sweeping gate voltage of ~3 V is also observed due to charge trapping in the RuOx metal nanocrystals. The program/erase mechanism is modified Fowler-Nordheim (F-N tunneling of the electrons and holes from Si substrate. The electrons and holes are trapped in the RuOx nanocrystals. Excellent program/erase endurance of 106 cycles and a large memory window of 4.3 V with a small charge loss of ~23% at 85°C are observed after 10 years of data retention time, due to the deep-level traps in the RuOx nanocrystals. The memory structure is very promising for future nanoscale nonvolatile memory applications.

  14. Thermal conductivity of silicon nanocrystals and polystyrene nanocomposite thin films

    International Nuclear Information System (INIS)

    Juangsa, Firman Bagja; Muroya, Yoshiki; Nozaki, Tomohiro; Ryu, Meguya; Morikawa, Junko

    2016-01-01

    Silicon nanocrystals (SiNCs) are well known for their size-dependent optical and electronic properties; they also have the potential for low yet controllable thermal properties. As a silicon-based low-thermal conductivity material is required in microdevice applications, SiNCs can be utilized for thermal insulation. In this paper, SiNCs and polymer nanocomposites were produced, and their thermal conductivity, including the density and specific heat, was measured. Measurement results were compared with thermal conductivity models for composite materials, and the comparison shows a decreasing value of the thermal conductivity, indicating the effect of the size and presence of the nanostructure on the thermal conductivity. Moreover, employing silicon inks at room temperature during the fabrication process enables a low cost of fabrication and preserves the unique properties of SiNCs. (paper)

  15. Pore forming polyalkylpyridinium salts from marine sponges versus synthetic lipofection systems: distinct tools for intracellular delivery of cDNA and siRNA.

    Science.gov (United States)

    McLaggan, Debra; Adjimatera, Noppadon; Sepcić, Kristina; Jaspars, Marcel; MacEwan, David J; Blagbrough, Ian S; Scott, Roderick H

    2006-01-16

    Haplosclerid marine sponges produce pore forming polyalkylpyridinium salts (poly-APS), which can be used to deliver macromolecules into cells. The aim of this study was to investigate the delivery of DNA, siRNA and lucifer yellow into cells mediated by poly-APS and its potential mechanisms as compared with other lipofection systems (lipofectamine and N4,N9-dioleoylspermine (LipoGen)). DNA condensation was evaluated and HEK 293 and HtTA HeLa cells were used to investigate pore formation and intracellular delivery of cDNA, siRNA and lucifer yellow. Poly-APS and LipoGen were both found to be highly efficient DNA condensing agents. Fura-2 calcium imaging was used to measure calcium transients indicative of cell membrane pore forming activity. Calcium transients were evoked by poly-APS but not LipoGen and lipofectamine. The increases in intracellular calcium produced by poly-APS showed temperature sensitivity with greater responses being observed at 12 degrees C compared to 21 degrees C. Similarly, delivery of lucifer yellow into cells with poly-APS was enhanced at lower temperatures. Transfection with cDNA encoding for the expression enhanced green fluorescent protein was also evaluated at 12 degrees C with poly-APS, lipofectamine and LipoGen. Intracellular delivery of siRNA was achieved with knockdown in beta-actin expression when lipofectamine and LipoGen were used as transfection reagents. However, intracellular delivery of siRNA was not achieved with poly-APS. Poly-APS mediated pore formation is critical to its activity as a transfection reagent, but lipofection systems utilise distinct mechanisms to enable delivery of DNA and siRNA into cells.

  16. Pore forming polyalkylpyridinium salts from marine sponges versus synthetic lipofection systems: distinct tools for intracellular delivery of cDNA and siRNA

    Directory of Open Access Journals (Sweden)

    Blagbrough Ian S

    2006-01-01

    Full Text Available Abstract Background Haplosclerid marine sponges produce pore forming polyalkylpyridinium salts (poly-APS, which can be used to deliver macromolecules into cells. The aim of this study was to investigate the delivery of DNA, siRNA and lucifer yellow into cells mediated by poly-APS and its potential mechanisms as compared with other lipofection systems (lipofectamine and N4,N9-dioleoylspermine (LipoGen. DNA condensation was evaluated and HEK 293 and HtTA HeLa cells were used to investigate pore formation and intracellular delivery of cDNA, siRNA and lucifer yellow. Results Poly-APS and LipoGen were both found to be highly efficient DNA condensing agents. Fura-2 calcium imaging was used to measure calcium transients indicative of cell membrane pore forming activity. Calcium transients were evoked by poly-APS but not LipoGen and lipofectamine. The increases in intracellular calcium produced by poly-APS showed temperature sensitivity with greater responses being observed at 12°C compared to 21°C. Similarly, delivery of lucifer yellow into cells with poly-APS was enhanced at lower temperatures. Transfection with cDNA encoding for the expression enhanced green fluorescent protein was also evaluated at 12°C with poly-APS, lipofectamine and LipoGen. Intracellular delivery of siRNA was achieved with knockdown in beta-actin expression when lipofectamine and LipoGen were used as transfection reagents. However, intracellular delivery of siRNA was not achieved with poly-APS. Conclusion Poly-APS mediated pore formation is critical to its activity as a transfection reagent, but lipofection systems utilise distinct mechanisms to enable delivery of DNA and siRNA into cells.

  17. Cellulose nanocrystal submonolayers by spin coating

    NARCIS (Netherlands)

    Kontturi, E.J.; Johansson, L.S.; Kontturi, K.S.; Ahonen, P.; Thune, P.C.; Laine, J.

    2007-01-01

    Dilute concentrations of cellulose nanocrystal solutions were spin coated onto different substrates to investigate the effect of the substrate on the nanocrystal submonolayers. Three substrates were probed: silica, titania, and amorphous cellulose. According to atomic force microscopy (AFM) images,

  18. Nanocrystal thin film fabrication methods and apparatus

    Science.gov (United States)

    Kagan, Cherie R.; Kim, David K.; Choi, Ji-Hyuk; Lai, Yuming

    2018-01-09

    Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant such as Indium, Potassium, Tin, etc. to reduce surface states. The thin film devices may be exposed to air during a portion of the fabrication. This enables fabrication of nanocrystal-based devices using a wider range of techniques such as photolithography and photolithographic patterning in an air environment.

  19. Study of the photodissociation of a CdSe nanocrystal beam by means of photoluminescence and Raman scattering

    CERN Document Server

    Orii, T; Onari, S; Kaito, S I; Arai, T

    1997-01-01

    We developed an apparatus that enables us to perform optical measurements of nanocrystals suspended in vacuum. CdSe nanocrystals were produced by a gas evaporation method, and nanocrystal beams were then formed using an inert-gas flow with differential pumping. We measured photoluminescence spectra of the nanocrystal beams with excitations of various photon energies and powers. For a low excitation power, edge emission of the CdSe nanocrystal beam was observed. With increase of the laser power, Raman lines of Se dimers emitted due to the photodissociation of CdSe nanocrystals were observed. It was found that the thresholds of the excitation laser fluence for the photodissociation of CdSe nanocrystals were much smaller than the thresholds of laser fluence for the laser-induced emission of Se atoms from bulk CdSe. The electronic process is dominant in the photodissociation of CdSe nanocrystals whose surfaces are completely free. We suggest that the effective supply of carriers confined in nanocrystals to the su...

  20. Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

    International Nuclear Information System (INIS)

    Shuleiko, D V; Ilin, A S

    2016-01-01

    Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

  1. Quantum-dot light-emitting diodes utilizing CdSe /ZnS nanocrystals embedded in TiO2 thin film

    Science.gov (United States)

    Kang, Seung-Hee; Kumar, Ch. Kiran; Lee, Zonghoon; Kim, Kyung-Hyun; Huh, Chul; Kim, Eui-Tae

    2008-11-01

    Quantum-dot (QD) light-emitting diodes (LEDs) are demonstrated on Si wafers by embedding core-shell CdSe /ZnS nanocrystals in TiO2 thin films via plasma-enhanced metallorganic chemical vapor deposition. The n-TiO2/QDs /p-Si LED devices show typical p-n diode current-voltage and efficient electroluminescence characteristics, which are critically affected by the removal of QD surface ligands. The TiO2/QDs /Si system we presented can offer promising Si-based optoelectronic and electronic device applications utilizing numerous nanocrystals synthesized by colloidal solution chemistry.

  2. Violet-blue photoluminescence from Si nanoparticles with zinc-blende structure synthesized by laser ablation in liquids

    Directory of Open Access Journals (Sweden)

    P. Liu

    2013-02-01

    Full Text Available Violet-blue luminescence from Si nanostructures has been widely investigated, because of its potential use in optoelectronic and bioimaging devices. However, the emission mechanism in multiform Si nanomaterials remains unclear. In this contribution, Si nanocrystals (NCs with zincblende structure and visible violet-blue emission are prepared by electric field assisted laser ablation in liquids. While subsequent annealing of the Si NCs weakens their blue emission dramatically. We investigate the origin of the violet-blue emission by monitoring crystal structure transitions and photoluminescence during different treatments of the Si NCs. The results indicate that the violet-blue emission cannot simply be ascribed to quantum confinement effects or the presence of general surface states on the Si NCs. Instead, we propose that excitons are formed within the Si NCs by direct transitions at Γ or X points, which can be induced during the formation of the zincblende structure, and are a most possible origin of the violet-blue luminescence. Furthermore, defects in the metastable Si NCs are also expected to play an important role in violet-blue emission. This study not only gives clear and general insight into the physical origins of violet-blue emission from Si NCs, it also provides useful information for designing optoelectronic devices based on Si NCs.

  3. Size limit on the phosphorous doped silicon nanocrystals for dopant activation

    Energy Technology Data Exchange (ETDEWEB)

    Yang, P., E-mail: pengyuan.yang@surrey.ac.uk [Surrey Ion Beam Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 5XH (United Kingdom); Gwilliam, R.M. [Surrey Ion Beam Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 5XH (United Kingdom); Crowe, I.F.; Papachristodoulou, N.; Halsall, M.P. [Photon Science Institute, School of Electrical and Electronic Engineering, Alan Turing Building, University of Manchester, Manchester M13 9PL (United Kingdom); Hylton, N.P. [Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ (United Kingdom); Hulko, O.; Knights, A.P. [Department of Engineering Physics and the Centre for Emerging Device Technologies, McMaster University, 1280 Main Street West, Hamilton L8S 4L7, Ontario (Canada); Shah, M.; Kenyon, A.J. [Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE (United Kingdom)

    2013-07-15

    We studied the photoluminescence spectra of silicon nanocrystals doped with and without phosphorus as a function of isothermal annealing time. Silicon nanocrystals were prepared by the implantation of 80 keV Si{sup +} into a 500 nm SiO{sub 2} film to an areal density of 8 × 10{sup 16} at/cm{sup 2}. Half of the samples were co-implanted with P{sup +} at 80 keV to 5 × 10{sup 15} at/cm{sup 2}. The photoluminescence of the annealed samples were photo-excited at wavelength of 405 nm. For short anneal times, when the nanocrystal size distribution has a relatively small mean diameter, formation in the presence of phosphorus yields an increase in the luminescence intensity and a blue shift in the emission peak compared with intrinsic nanocrystals. As the mean size increases with annealing time, this enhancement rapidly diminishes and the peak energy shifts to the red. Our results indicate the donor electron generation depends strongly on the nanocrystal size. We also found a critical limit above which it allows dopant activation.

  4. Morphological evolution of Ge/Si(001) quantum dot rings formed at the rim of wet-etched pits.

    Science.gov (United States)

    Grydlik, Martyna; Brehm, Moritz; Schäffler, Friedrich

    2012-10-30

    We demonstrate the formation of Ge quantum dots in ring-like arrangements around predefined {111}-faceted pits in the Si(001) substrate. We report on the complex morphological evolution of the single quantum dots contributing to the rings by means of atomic force microscopy and demonstrate that by careful adjustment of the epitaxial growth parameters, such rings containing densely squeezed islands can be grown with large spatial distances of up to 5 μm without additional nucleation of randomly distributed quantum dots between the rings.

  5. Diazonium salts as grafting agents and efficient radical-hydrosilylation initiators for freestanding photoluminescent silicon nanocrystals.

    Science.gov (United States)

    Höhlein, Ignaz M D; Kehrle, Julian; Helbich, Tobias; Yang, Zhenyu; Veinot, Jonathan G C; Rieger, Bernhard

    2014-04-07

    The reactivity of diazonium salts towards freestanding, photoluminescent silicon nanocrystals (SiNCs) is reported. It was found that SiNCs can be functionalized with aryl groups by direct reductive grafting of the diazonium salts. Furthermore, diazonium salts are efficient radical initiators for SiNC hydrosilylation. For this purpose, novel electron-deficient diazonium salts, highly soluble in nonpolar solvents were synthesized. The SiNCs were functionalized with a variety of alkenes and alkynes at room temperature with short reaction times. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Thermoelectric Properties of Nanograined Si-Ge-Au Thin Films Grown by Molecular Beam Deposition

    Science.gov (United States)

    Nishino, Shunsuke; Ekino, Satoshi; Inukai, Manabu; Omprakash, Muthusamy; Adachi, Masahiro; Kiyama, Makoto; Yamamoto, Yoshiyuki; Takeuchi, Tsunehiro

    2018-06-01

    Conditions to achieve extremely large Seebeck coefficient and extremely small thermal conductivity in Si-Ge-Au thin films formed of nanosized grains precipitated in amorphous matrix have been investigated. We employed molecular beam deposition to prepare Si1- x Ge x Au y thin films on sapphire substrate. The deposited films were annealed under nitrogen gas atmosphere at 300°C to 500°C for 15 min to 30 min. Nanocrystals dispersed in amorphous matrix were clearly observed by transmission electron microscopy. We did not observe anomalously large Seebeck coefficient, but very low thermal conductivity of nearly 1.0 W K-1 m-1 was found at around 0.2 Si-Ge bulk material for which dimensionless figure of merit of ZT ≈ 1 was reported at high temperature.

  7. Flame synthesis of zinc oxide nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Merchan-Merchan, Wilson, E-mail: wmerchan-merchan@ou.edu [School of Aerospace and Mechanical Engineering, University of Oklahoma, Norman, OK 73019 (United States); Farahani, Moien Farmahini [School of Aerospace and Mechanical Engineering, University of Oklahoma, Norman, OK 73019 (United States)

    2013-02-01

    Highlights: Black-Right-Pointing-Pointer We report a single-step flame method for the synthesis of Zn oxide nanocrystals. Black-Right-Pointing-Pointer Diverse flame positions lead to a variation of Zn oxide nanocrystal growth. Black-Right-Pointing-Pointer The synthesized crystals have polyhedral, pipet- and needle-like shape. Black-Right-Pointing-Pointer High length-to-diameter aspect-ratio crystals appear in a higher temperature flame. Black-Right-Pointing-Pointer The crystal growth mechanism corresponds to vapor-to-solid conversion. - Abstract: Distinctive zinc oxide (ZnO) nanocrystals were synthesized on the surface of Zn probes using a counter-flow flame medium formed by methane/acetylene and oxygen-enriched air streams. The source material, a zinc wire with a purity of {approx}99.99% and diameter of 1 mm, was introduced through a sleeve into the oxygen rich region of the flame. The position of the probe/sleeve was varied within the flame medium resulting in growth variation of ZnO nanocrystals on the surface of the probe. The shape and structural parameters of the grown crystals strongly depend on the flame position. Structural variations of the synthesized crystals include single-crystalline ZnO nanorods and microprisms (ZMPs) (the ZMPs have less than a few micrometers in length and several hundred nanometers in cross section) with a large number of facets and complex axial symmetry with a nanorod protruding from their tips. The protruding rods are less than 100 nm in diameter and lengths are less than 1 {mu}m. The protruding nanorods can be elongated several times by increasing the residence time of the probe/sleeve inside the oxygen-rich flame or by varying the flame position. At different flame heights, nanorods having higher length-to-diameter aspect-ratio can be synthesized. A lattice spacing of {approx}0.26 nm was measured for the synthesized nanorods, which can be closely correlated with the (0 0 2) interplanar spacing of hexagonal ZnO (Wurtzite) cells

  8. Semiconductor Nanocrystals for Biological Imaging

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  9. Mineral contents and their solubility on calcium carbonat calcite nanocrystals from cockle shell powder (Anadara granosa Linn)

    Science.gov (United States)

    Widyastuti, S.; Pramushinta, I. A.

    2018-03-01

    Prepared and characterized calcium carbonat calcite nanocrystals improves solubility. Calcium carbonat calcite nanocrystals were synthesized using precipitation method from the waste of blood clam cockle shells (Anadara granosa Linn). This study was conducted to analyze mineral composition of nanocrystals calcium carbonat calcite cockle (Anadara granosa) shell for calcium fortification of food applications and to evaluate the solubilities of Calsium and Phospor. The sample of nanocrystals from cockle shells was evaluated to determine the content of 11 macro-and micro-elements. These elements are Calcium (Ca), Magnesium (Mg), Sodium (Na), Phosphorus (P), Potassium (K), Ferrum (Fe), Copper (Cu), Nickel (Ni), Zink (Zn), Boron (B) and Silica (Si)). Cockleshell powders were found to contain toxic elements below detectable levels. The solubilities of Calcium and Phospor were p<0.05.

  10. Zero-reabsorption doped-nanocrystal luminescent solar concentrators.

    Science.gov (United States)

    Erickson, Christian S; Bradshaw, Liam R; McDowall, Stephen; Gilbertson, John D; Gamelin, Daniel R; Patrick, David L

    2014-04-22

    Optical concentration can lower the cost of solar energy conversion by reducing photovoltaic cell area and increasing photovoltaic efficiency. Luminescent solar concentrators offer an attractive approach to combined spectral and spatial concentration of both specular and diffuse light without tracking, but they have been plagued by luminophore self-absorption losses when employed on practical size scales. Here, we introduce doped semiconductor nanocrystals as a new class of phosphors for use in luminescent solar concentrators. In proof-of-concept experiments, visibly transparent, ultraviolet-selective luminescent solar concentrators have been prepared using colloidal Mn(2+)-doped ZnSe nanocrystals that show no luminescence reabsorption. Optical quantum efficiencies of 37% are measured, yielding a maximum projected energy concentration of ∼6× and flux gain for a-Si photovoltaics of 15.6 in the large-area limit, for the first time bounded not by luminophore self-absorption but by the transparency of the waveguide itself. Future directions in the use of colloidal doped nanocrystals as robust, processable spectrum-shifting phosphors for luminescent solar concentration on the large scales required for practical application of this technology are discussed.

  11. Advanced Branching Control and Characterization of Inorganic Semiconducting Nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Hughes, Steven Michael [Univ. of California, Berkeley, CA (United States)

    2007-01-01

    The ability to finely tune the size and shape of inorganic semiconducting nanocrystals is an area of great interest, as the more control one has, the more applications will be possible for their use. The first two basic shapes develped in nanocrystals were the sphere and the anistropic nanorod. the II_VI materials being used such as Cadmium Selenide (CdSe) and Cadmium Telluride (CdTe), exhibit polytypism, which allows them to form in either the hexagonally packed wurtzite or cubically packed zinc blende crystalline phase. The nanorods are wurtzite with the length of the rod growing along the c-axis. As this grows, stacking faults may form, which are layers of zinc blende in the otherwise wurtzite crystal. Using this polytypism, though, the first generation of branched crystals were developed in the form of the CdTe tetrapod. This is a nanocrystal that nucleates in the zincblend form, creating a tetrahedral core, on which four wurtzite arms are grown. This structure opened up the possibility of even more complex shapes and applications. This disseration investigates the advancement of branching control and further understanding the materials polytypism in the form of the stacking faults in nanorods.

  12. High quality zinc-blende CdSe nanocrystals synthesized in a hexadecylamine-oleic acid-paraffin liquid mixture

    Energy Technology Data Exchange (ETDEWEB)

    Wang Lan, E-mail: lwang322@yahoo.com.cn [Department of Applied Physics, Harbin Institute of Technology, Harbin 150001 (China); Department of Physics, Harbin Medical University, Harbin 150081 (China); Sun Xiudong, E-mail: xdsun@hit.edu.cn [Department of Applied Physics, Harbin Institute of Technology, Harbin 150001 (China); Liu Wenjing [Department of Astronautic Science and Mechanics, Harbin Institute of Technology, Harbin 150001 (China); Liu Bingyi [Laboratory Center for the School of Pharmacy, Harbin Medical University, Harbin 150081 (China)

    2010-03-15

    Safe, common, and low-cost compounds were used as solvents for the non-tri-n-octylphosphine (TOP) synthesis of high quality CdSe nanocrystals (NCs) in open air. In oleic acid-paraffin liquid system, CdSe nanocrystals in the less common zinc-blende (ZB, cubic) crystal structure have been obtained. The effects of adding n-hexadecylamine (HDA) to different solutions were discussed. Stable, highly homogeneous and luminescent CdSe nanocrystals were formed by adding n-hexadecylamine to Cd solution rather than to Se solution. Without any size sorting, the size distribution of the nanocrystals can be readily controlled and the highest photoluminescence (PL) quantum efficiency (QE) of the nanocrystals was up to 20-30%.

  13. High quality zinc-blende CdSe nanocrystals synthesized in a hexadecylamine-oleic acid-paraffin liquid mixture

    International Nuclear Information System (INIS)

    Wang Lan; Sun Xiudong; Liu Wenjing; Liu Bingyi

    2010-01-01

    Safe, common, and low-cost compounds were used as solvents for the non-tri-n-octylphosphine (TOP) synthesis of high quality CdSe nanocrystals (NCs) in open air. In oleic acid-paraffin liquid system, CdSe nanocrystals in the less common zinc-blende (ZB, cubic) crystal structure have been obtained. The effects of adding n-hexadecylamine (HDA) to different solutions were discussed. Stable, highly homogeneous and luminescent CdSe nanocrystals were formed by adding n-hexadecylamine to Cd solution rather than to Se solution. Without any size sorting, the size distribution of the nanocrystals can be readily controlled and the highest photoluminescence (PL) quantum efficiency (QE) of the nanocrystals was up to 20-30%.

  14. Capping Ligand Vortices as "Atomic Orbitals" in Nanocrystal Self-Assembly.

    Science.gov (United States)

    Waltmann, Curt; Horst, Nathan; Travesset, Alex

    2017-11-28

    We present a detailed analysis of the interaction between two nanocrystals capped with ligands consisting of hydrocarbon chains by united atom molecular dynamics simulations. We show that the bonding of two nanocrystals is characterized by ligand textures in the form of vortices. These results are generalized to nanocrystals of different types (differing core and ligand sizes) where the structure of the vortices depends on the softness asymmetry. We provide rigorous calculations for the binding free energy, show that these energies are independent of the chemical composition of the cores, and derive analytical formulas for the equilibrium separation. We discuss the implications of our results for the self-assembly of single-component and binary nanoparticle superlattices. Overall, our results show that the structure of the ligands completely determines the bonding of nanocrystals, fully supporting the predictions of the recently proposed Orbifold topological model.

  15. Precipitation-lyophilization-homogenization (PLH) for preparation of clarithromycin nanocrystals: influencing factors on physicochemical properties and stability.

    Science.gov (United States)

    Morakul, Boontida; Suksiriworapong, Jiraphong; Leanpolchareanchai, Jiraporn; Junyaprasert, Varaporn Buraphacheep

    2013-11-30

    Nanocrystals is one of effective technologies used to improve solubility and dissolution behavior of poorly soluble drugs. Clarithromycin is classified in BCS class II having low bioavailability due to very low dissolution behavior. The main purpose of this study was to investigate an efficiency of clarithromycin nanocrystals preparation by precipitation-lyophilization-homogenization (PLH) combination method in comparison with high pressure homogenization (HPH) method. The factors influencing particle size reduction and physical stability were assessed. The results showed that the PLH technique provided an effective and rapid reduction of particle size of nanocrystals to 460 ± 10 nm with homogeneity size distribution after only the fifth cycle of homogenization, whereas the same size was attained after 30 cycles by the HPH method. The smallest nanocrystals were achieved by using the combination of poloxamer 407 (2%, w/v) and SLS (0.1%, w/v) as stabilizers. This combination could prevent the particle aggregation over 3-month storage at 4 °C. The results from SEM showed that the clarithromycin nanocrystals were in cubic-shaped similar to its initial particle morphology. The DSC thermogram and X-ray diffraction pattern of nanocrystals were not different from the original drug except for intensity of peaks which indicated the presenting of nanocrystals in the crystalline state and/or partial amorphous form. In addition, the dissolution of the clarithromycin nanocrystals was dramatically increased as compared to the coarse clarithromycin. Copyright © 2013 Elsevier B.V. All rights reserved.

  16. Biopolymer coated gold nanocrystals prepared using the green chemistry approach and their shape-dependent catalytic and surface-enhanced Raman scattering properties.

    Science.gov (United States)

    Chou, Chih-Wei; Hsieh, Hui-Hsuan; Hseu, You-Cheng; Chen, Ko-Shao; Wang, Gou-Jen; Chang, Hsien-Chang; Pan, Yong-Li; Wei, Yi-Syuan; Chang, Ko Hsin; Harn, Yeu-Wei

    2013-07-21

    This study deals with the preparation of multi-shaped nanoscale gold crystals under synthetically simple, green, and efficient conditions using a seed-mediated growth approach in the presence of hyaluronic acid (HA). These highly biocompatible multi-shaped gold nanocrystals were examined to evaluate their catalytic and surface enhanced Raman scattering (SERS) properties. The results show that the size and shape of the nanocrystals are mainly correlated to the amount of seed, seed size, HA concentration, and reaction temperature. Gold seeds accelerate the reduction of the gold precursor to form gold nanocrystals using HA. The HA serves as a reducing agent and a growth template for the reduction of Au(III) and nanocrystal stabilization. The multi-shaped gold nanocrystals showed superior catalytic properties and higher SERS performance. The simple, green approach efficiently controls the nanocrystals and creates many opportunities for future applications.

  17. Photoluminescent silicon nanocrystals with chlorosilane surfaces - synthesis and reactivity

    Science.gov (United States)

    Höhlein, Ignaz M. D.; Kehrle, Julian; Purkait, Tapas K.; Veinot, Jonathan G. C.; Rieger, Bernhard

    2014-12-01

    We present a new efficient two-step method to covalently functionalize hydride terminated silicon nanocrystals with nucleophiles. First a reactive chlorosilane layer was formed via diazonium salt initiated hydrosilylation of chlorodimethyl(vinyl)silane which was then reacted with alcohols, silanols and organolithium reagents. With organolithium compounds a side reaction is observed in which a direct functionalization of the silicon surface takes place.We present a new efficient two-step method to covalently functionalize hydride terminated silicon nanocrystals with nucleophiles. First a reactive chlorosilane layer was formed via diazonium salt initiated hydrosilylation of chlorodimethyl(vinyl)silane which was then reacted with alcohols, silanols and organolithium reagents. With organolithium compounds a side reaction is observed in which a direct functionalization of the silicon surface takes place. Electronic supplementary information (ESI) available: Detailed experimental procedures and additional NMR, PL, EDX, DLS and TEM data. See DOI: 10.1039/C4NR05888G

  18. Phase transitions and doping in semiconductor nanocrystals

    Science.gov (United States)

    Sahu, Ayaskanta

    Colloidal semiconductor nanocrystals are a promising technological material because their size-dependent optical and electronic properties can be exploited for a diverse range of applications such as light-emitting diodes, bio-labels, transistors, and solar cells. For many of these applications, electrical current needs to be transported through the devices. However, while their solution processability makes these colloidal nanocrystals attractive candidates for device applications, the bulky surfactants that render these nanocrystals dispersible in common solvents block electrical current. Thus, in order to realize the full potential of colloidal semiconductor nanocrystals in the next-generation of solid-state devices, methods must be devised to make conductive films from these nanocrystals. One way to achieve this would be to add minute amounts of foreign impurity atoms (dopants) to increase their conductivity. Electronic doping in nanocrystals is still very much in its infancy with limited understanding of the underlying mechanisms that govern the doping process. This thesis introduces an innovative synthesis of doped nanocrystals and aims at expanding the fundamental understanding of charge transport in these doped nanocrystal films. The list of semiconductor nanocrystals that can be doped is large, and if one combines that with available dopants, an even larger set of materials with interesting properties and applications can be generated. In addition to doping, another promising route to increase conductivity in nanocrystal films is to use nanocrystals with high ionic conductivities. This thesis also examines this possibility by studying new phases of mixed ionic and electronic conductors at the nanoscale. Such a versatile approach may open new pathways for interesting fundamental research, and also lay the foundation for the creation of novel materials with important applications. In addition to their size-dependence, the intentional incorporation of

  19. Dispersing Si{sub 3}N{sub 4} at high solids loading - applied to protein forming

    Energy Technology Data Exchange (ETDEWEB)

    Lyckfeldt, O.; Palmqvist, L. [Swedish Ceramic Inst., Goeteborg (Sweden); Poeydemenge, F. [ENSCI, Limoges (France)

    2002-07-01

    The dispersing of a Si{sub 3}N{sub 4} powder (UBE SN-E10) at high solids loading in aqueous media was investigated. The powder was used in the as-received (raw) state, after thermal (calcinations) and/or mechanical pre-treatments (ball milling{yields}freeze granulation{yields}freeze-drying). Slips were prepared using pH adjustment with NH{sub 4}OH or an addition of Tiron (low-M{sub w} sulphonic acid). Zeta potential measurements of diluted systems and rheological evaluations of concentrated suspensions were conducted. The effect of adding whey protein concentrate (WPC) was also studied. Zeta potential measurements showed a clear decrease in pH{sub iep} by calcination, whereas Tiron slightly increased the pH{sub iep} of calcined powder and decreased the pH{sub iep} of the as-received powder. Rheological data showed that pH adjustment to 10 was more efficient in stabilising the as-received powder than the calcined powder. pH adjustment was also considered to be the most important effect of adding small amounts of Tiron (0.08 wt%). However, for calcined powder, Tiron was shown to be equally efficient as pH adjustment. Pre-milling followed by freeze granulation/freeze-drying resulted in de-agglomerated powders with improved ability to rapidly disperse and, hence, extend the possibility of achieving extreme solids loadings. When approaching the practical limits in solids loading of these pre-milled powders, slips with 49.5 vol% of as-received and 46.6 vol% of calcined powders displayed clear shear thickening behaviour. However, addition of WPC (12 wt% based on water) significantly decreased the degree of shear thickening although the viscosity at lower shear rates increased. The gelling of WPC was distinct and rapid in suspensions with the two pre-milled powders, as-received stabilised at pH 10 and calcined stabilised with Tiron. (orig.)

  20. Effect of thermal exposure, forming, and welding on high-temperature, dispersion-strengthened aluminum alloy: Al-8Fe-1V-2Si

    Science.gov (United States)

    Kennedy, J. R.; Gilman, P. S.; Zedalis, M. S.; Skinner, D. J.; Peltier, J. M.

    1991-01-01

    The feasibility of applying conventional hot forming and welding methods to high temperature aluminum alloy, Al-8Fe-1V-2Si (FVS812), for structural applications and the effect of thermal exposure on mechanical properties were determined. FVS812 (AA8009) sheet exhibited good hot forming and resistance welding characteristics. It was brake formed to 90 deg bends (0.5T bend radius) at temperatures greater than or equal to 390 C (730 F), indicating the feasibility of fabricating basic shapes, such as angles and zees. Hot forming of simple contoured-flanged parts was demonstrated. Resistance spot welds with good static and fatigue strength at room and elevated temperatures were readily produced. Extended vacuum degassing during billet fabrication reduced porosity in fusion and resistance welds. However, electron beam welding was not possible because of extreme degassing during welding, and gas-tungsten-arc welds were not acceptable because of severely degraded mechanical properties. The FVS812 alloy exhibited excellent high temperature strength stability after thermal exposures up to 315 C (600 F) for 1000 h. Extended billet degassing appeared to generally improve tensile ductility, fatigue strength, and notch toughness. But the effects of billet degassing and thermal exposure on properties need to be further clarified. The manufacture of zee-stiffened, riveted, and resistance-spot-welded compression panels was demonstrated.

  1. Influence of Al-Si alloy microstructure on the corrosion resistance of coatings formed by the microarc oxidation method

    Directory of Open Access Journals (Sweden)

    Dudareva Natalia.Y.

    2017-01-01

    Full Text Available The impact of the high-silicon aluminum alloy initial microstructure on the quality of the coating formed by microarc oxidation (MAO has been studied. The MAO treatment is applied to AK12D samples in the initial coarse-grained state and after high pressure torsion. The following coating properties are studied: thickness, microhardness, porosity and corrosion resistance. It is established that the MAO layers properties depend on the base microstructure much. High pressure torsion applied to AK12D samples before MAO results in increase of the coating thickness by ∼ 2 times. The microhardness of coatings reduces and their corrosion resistance degrades by ∼ 10 times.

  2. Silicon-substituted hydroxyapatite coating with Si content on the nanotube-formed Ti–Nb–Zr alloy using electron beam-physical vapor deposition

    International Nuclear Information System (INIS)

    Jeong, Yong-Hoon; Choe, Han-Cheol; Brantley, William A.

    2013-01-01

    The purpose of this study was to investigate the electrochemical characteristics of silicon-substituted hydroxyapatite coatings on the nanotube-formed Ti–35Nb–10Zr alloy. The silicon-substituted hydroxyapatite (Si–HA) coatings on the nanotube structure were deposited by electron beam-physical vapor deposition and anodization methods, and biodegradation properties were analyzed by potentiodynamic polarization and electrochemical impedance spectroscopy measurement. The surface characteristics were analyzed by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction (XRD). The Si–HA layers were deposited with rough features having highly ordered nanotube structures on the titanium alloy substrate. The thickness of the Si–HA coating was less than that of the HA coating. The XRD results confirmed that the Si–HA coating on the nanotube structure consisted of TiO 2 anatase, TiO 2 rutile, hydroxyapatite, and calcium phosphate silicate. The Si–HA coating surface exhibited lower I corr than the HA coating, and the polarization resistance was increased by substitution of silicon in hydroxyapatite. - Highlights: • Silicon substituted hydroxyapatite (Si–HA) was coated on nanotubular titanium alloy. • The Si–HA coating thickness was less than single hydroxyapatite (HA) coating. • Si–HA coatings consisted of TiO 2 , HA, and Ca 5 (PO 4 ) 2 SiO 4 . • Polarization resistance of the coating was increased by Si substitution in HA

  3. Synthesis of nanocrystals and nanocrystal self-assembly

    Science.gov (United States)

    Chen, Zhuoying

    Chapter 1. A general introduction is presented on nanomaterials and nanoscience. Nanoparticles are discussed with respect to their structure and properties. Ferroelectric materials and nanoparticles in particular are highlighted, especially in the case of the barium titanate, and their potential applications are discussed. Different nanocrystal synthetic techniques are discussed. Nanoparticle superlattices, the novel "meta-materials" built from self-assembly at the nanoscale, are introduced. The formation of nanoparticle superlattices and the importance and interest of synthesizing these nanostructures is discussed. Chapter 2. Advanced applications for high k dielectric and ferroelectric materials in the electronics industry continues to demand an understanding of the underlying physics in decreasing dimensions into the nanoscale. The first part of this chapter presents the synthesis, processing, and electrical characterization of nanostructured thin films (thickness ˜100 nm) of barium titanate BaTiO3 built from uniform nanoparticles (alcohols were used to study the effect of size and morphological control over the nanocrystals. Techniques including X-ray diffraction, transmission electron microscopy, selected area electron diffraction, and high-resolution electron microscopy are used to examine crystallinity and morphology. Chapter 3. By investigating the self-assembly of cadmium selenide-gold (CdSe-Au) nanoparticle mixtures by transmission electron microscopy after solvent evaporation, the effect of solvents in the formation process of CdSe-Au binary nanoparticle superlattices (BNSLs) was studied. 1-dodecanethiol was found to be critical in generating conditions necessary for superlattice formation, prior to the other factors that likely determine structure, highlighting the dual role of this organic polar molecule as both ligand and high boiling point/crystallization solvent. The influence of thiol was investigated under various concentrations (and also

  4. Spatial variation of the number of graphene layers formed on the scratched 6H-SiC(0 0 0 1) surface

    Energy Technology Data Exchange (ETDEWEB)

    Osaklung, J. [School of Physics, Suranaree University of Technology, Nakhon Ratchasima 30000 (Thailand); Department of Physics, Faculty of Science, Kasetsart University, Bangkok 10900 (Thailand); Euaruksakul, C. [Synchrotron Light Research Institute, Nakhon Ratchasima 30000 (Thailand); Thailand Center of Excellence in Physics, CHE, Bangkok 10400 (Thailand); Meevasana, W., E-mail: worawat@g.sut.ac.th [School of Physics, Suranaree University of Technology, Nakhon Ratchasima 30000 (Thailand); Synchrotron Light Research Institute, Nakhon Ratchasima 30000 (Thailand); Thailand Center of Excellence in Physics, CHE, Bangkok 10400 (Thailand); Songsiriritthigul, P. [School of Physics, Suranaree University of Technology, Nakhon Ratchasima 30000 (Thailand); Synchrotron Light Research Institute, Nakhon Ratchasima 30000 (Thailand); Thailand Center of Excellence in Physics, CHE, Bangkok 10400 (Thailand)

    2012-03-01

    The unique properties of graphene can vary greatly depending on the number of graphene layers; therefore, spatial control of graphene thickness is desired to fully exploit these properties in promising new devices. Using low energy electron microscopy (LEEM), we investigate how scratches on the surface of 6H-SiC(0 0 0 1) affect the epitaxial growth of graphene. Oscillations in the LEEM-image intensity as a function of electron energy (I-V LEEM analysis) show that the number of graphene layers clearly differs between regions of scratched and smooth substrate. The extent of the thicker graphene layers formed above scratches is found to be significantly larger than the width of the scratch itself. This finding can be implemented as an additional technique for spatially modulating graphene thickness.

  5. Effect of forming-gas annealing on the resistance switching effect of heteroepitaxial Nb:SrTiO{sub 3} film on Si substrate

    Energy Technology Data Exchange (ETDEWEB)

    Xiang, Wenfeng; Hu, Minghao; Liu, Yi [China University of Petroleum, Beijing Key Laboratory of Optical Detection Technology for Oil and Gas, Beijing (China)

    2017-12-15

    The influence of forming-gas annealing (FGA) on the resistance switching effect of epitaxial Nb:SrTiO{sub 3} [Nb-doped strontium titanates (NbSTO)] films on Si substrate has been investigated. The resistance values at low and high resistance states for NbSTO films after FGA are about two orders of magnitude lower than those of the as-deposited sample, which may effectively decrease the power dissipation of devices. Hysteretic I-V characteristic curves show that the stability of FGA sample was improved. The resistance ratio of NbSTO films measured via pulse voltage increased from 1.0-1.2 to 3.2-3.6 after FGA. Moreover, the resistance ratio of the FGA sample gradually increased with increasing number of cycles. These results indicate that FGA improves the resistance switching characteristics of NbSTO films. In addition, the underlying mechanism was discussed. (orig.)

  6. Systematic spatial and stoichiometric screening towards understanding the surface of ultrasmall oxygenated silicon nanocrystal

    Science.gov (United States)

    Niaz, Shanawer; Zdetsis, Aristides D.; Koukaras, Emmanuel N.; Gülseren, Oǧuz; Sadiq, Imran

    2016-11-01

    In most of the realistic ab initio and model calculations which have appeared on the emission of light from silicon nanocrystals, the role of surface oxygen has been usually ignored, underestimated or completely ruled out. We investigate theoretically, by density functional theory (DFT/B3LYP) possible modes of oxygen bonding in hydrogen terminated silicon quantum dots using as a representative case of the Si29 nanocrystal. We have considered Bridge-bonded oxygen (BBO), Doubly-bonded oxygen (DBO), hydroxyl (OH) and Mix of these oxidizing agents. Due to stoichiometry, all comparisons performed are unbiased with respect to composition whereas spatial distribution of oxygen species pointed out drastic change in electronic and cohesive characteristics of nanocrytals. From an overall perspective of this study, it is shown that bridge bonded oxygenated Si nanocrystals accompanied by Mix have higher binding energies and large electronic gap compared to nanocrystals with doubly bonded oxygen atoms. In addition, it is observed that the presence of OH along with BBO, DBO and mixed configurations further lowers electronic gaps and binding energies but trends in same fashion. It is also demonstrated that within same composition, oxidizing constituent, along with their spatial distribution substantially alters binding energy, highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) gap (up to 1.48 eV) and localization of frontier orbitals.

  7. Graphene enhanced field emission from InP nanocrystals.

    Science.gov (United States)

    Iemmo, L; Di Bartolomeo, A; Giubileo, F; Luongo, G; Passacantando, M; Niu, G; Hatami, F; Skibitzki, O; Schroeder, T

    2017-12-08

    We report the observation of field emission (FE) from InP nanocrystals (NCs) epitaxially grown on an array of p-Si nanotips. We prove that FE can be enhanced by covering the InP NCs with graphene. The measurements are performed inside a scanning electron microscope chamber with a nano-controlled W-thread used as an anode. We analyze the FE by Fowler-Nordheim theory and find that the field enhancement factor increases monotonically with the spacing between the anode and the cathode. We also show that InP/p-Si junction has a rectifying behavior, while graphene on InP creates an ohmic contact. Understanding the fundamentals of such nanojunctions is key for applications in nanoelectronics.

  8. UV and air stability of high-efficiency photoluminescent silicon nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Jihua, E-mail: yangj@umn.edu [Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Liptak, Richard [Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Department of Physics and Optical Engineering, Rose-Hulman Institute of Technology, 5500 Wabash Ave, Terre Haute, IN 47803 (United States); Rowe, David; Wu, Jeslin [Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Casey, James; Witker, David [Dow Corning Corporation, 2200 W. Salzburg Road, Midland, MI 48686 (United States); Campbell, Stephen A. [Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Kortshagen, Uwe, E-mail: kortshagen@umn.edu [Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 (United States)

    2014-12-30

    The effects of UV light and air exposure on the photoluminescent properties of nonthermal plasma-synthesized silicon nanocrystals (Si NCs) were investigated. Si NCs with high-efficiency photoluminescence (PL) have been achieved via a post-synthesis hydrosilylation process. Photobleaching is observed within the first few hours of ultra-violet (UV) irradiation. Equilibrium is reached after ∼4 h of UV exposure wherein the Si NCs are able to retain 52% of the initially measured PL quantum yield (PLQY). UV-treated Si NCs showed recovery of PL with time. Gas-phase passivation of Si NCs by hydrogen afterglow injection improves PLQY and PL stability against UV and air exposure. Additionally, phosphorous doping can also improve UV stability of photoluminescent Si NCs.

  9. Electron transfer through solid-electrolyte-interphase layers formed on Si anodes of Li-ion batteries

    International Nuclear Information System (INIS)

    Benitez, L.; Cristancho, D.; Seminario, J.M.; Martinez de la Hoz, J.M.; Balbuena, P.B.

    2014-01-01

    Solid-electrolyte interphase (SEI) films are formed on the electrode surfaces due to aggregation of products of reduction or oxidation of the electrolyte. These films may grow to thicknesses in the order of 50-100 nm and contain a variety of organic and inorganic products but their structure is not well defined. Although in some cases the films exert a passivating role, this is not always the case, and these phenomena are particularly more complex on Silicon anodes due to swelling and cracking of the electrode during lithiation and delithiation. Since the driving force for SEI growth is electron transfer, it is important to understand how electron transfer may keep occurring through the heterogeneous film once the bare electron surface is covered. Here we introduce a novel approach for studying electron transfer through model films and show preliminary results for the analysis of electron transfer through model composite interfacial systems integrated by electrode/SEI layer/electrolyte. Ab initio molecular dynamics simulations are used to identify deposition of SEI components, and a density functional theory/Green's function approach is utilized for characterizing electron transfer. Three degrees of lithiation are modeled for the electrodes, the SEI film is composed by LiF or Li 2 O, and the ethylene carbonate reduction is studied. An applied potential is used as driving force for the leakage current, which is evaluated as a function of the applied potential. Comparative analyses are done for LiF and Li 2 O model SEI layers

  10. Pt Single Atoms Embedded in the Surface of Ni Nanocrystals as Highly Active Catalysts for Selective Hydrogenation of Nitro Compounds.

    Science.gov (United States)

    Peng, Yuhan; Geng, Zhigang; Zhao, Songtao; Wang, Liangbing; Li, Hongliang; Wang, Xu; Zheng, Xusheng; Zhu, Junfa; Li, Zhenyu; Si, Rui; Zeng, Jie

    2018-06-13

    Single-atom catalysts exhibit high selectivity in hydrogenation due to their isolated active sites, which ensure uniform adsorption configurations of substrate molecules. Compared with the achievement in catalytic selectivity, there is still a long way to go in exploiting the catalytic activity of single-atom catalysts. Herein, we developed highly active and selective catalysts in selective hydrogenation by embedding Pt single atoms in the surface of Ni nanocrystals (denoted as Pt 1 /Ni nanocrystals). During the hydrogenation of 3-nitrostyrene, the TOF numbers based on surface Pt atoms of Pt 1 /Ni nanocrystals reached ∼1800 h -1 under 3 atm of H 2 at 40 °C, much higher than that of Pt single atoms supported on active carbon, TiO 2 , SiO 2 , and ZSM-5. Mechanistic studies reveal that the remarkable activity of Pt 1 /Ni nanocrystals derived from sufficient hydrogen supply because of spontaneous dissociation of H 2 on both Pt and Ni atoms as well as facile diffusion of H atoms on Pt 1 /Ni nanocrystals. Moreover, the ensemble composed of the Pt single atom and nearby Ni atoms in Pt 1 /Ni nanocrystals leads to the adsorption configuration of 3-nitrostyrene favorable for the activation of nitro groups, accounting for the high selectivity for 3-vinylaniline.

  11. Hollow nanocrystals and method of making

    Science.gov (United States)

    Alivisatos, A Paul [Oakland, CA; Yin, Yadong [Moreno Valley, CA; Erdonmez, Can Kerem [Berkeley, CA

    2011-07-05

    Described herein are hollow nanocrystals having various shapes that can be produced by a simple chemical process. The hollow nanocrystals described herein may have a shell as thin as 0.5 nm and outside diameters that can be controlled by the process of making.

  12. Synthesis, spectroscopy and simulation of doped nanocrystals

    NARCIS (Netherlands)

    Suyver, Jan Frederik

    2003-01-01

    This thesis deals with the properties of semiconductor nanocrystals (ZnS or ZnSe) in the size range (diameter) of 2 nm to 10 nm. The nanocrystals under investigation are doped with the transition metal ions manganese or copper. The goal is to study photoluminescence and electroluminescence from

  13. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    Science.gov (United States)

    Weiss, Shimon [Pinole, CA; Schlamp, Michael C [Plainsboro, NJ; Alivisatos, A Paul [Oakland, CA

    2011-09-27

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  14. Analyses of the As doping of SiO{sub 2}/Si/SiO{sub 2} nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ruffino, Francesco; Miritello, Maria [CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy); Tomasello, Mario Vincenzo [Scuola Superiore di Catania, via San Nullo 5/i, 95123 Catania (Italy); De Bastiani, Riccardo; Grimaldi, Maria Grazia [Dipartimento di Fisica ed Astronomia, Universita di Catania, via S. Sofia 64, 95123 Catania (Italy); CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy); Nicotra, Giuseppe; Spinella, Corrado [Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), VIII Strada 5, 95121 Catania (Italy)

    2011-03-15

    We illustrate the behaviour of As when it is confined, by the implantation technique, in a SiO{sub 2}(70nm)/Si(30nm)/SiO{sub 2}(70nm) multilayer and its spatial redistribution when annealing processes are performed. By Rutherford backscattering spectrometry and Z-contrast transmission electron microscopy we found an As accumulation at the Si/SiO{sub 2} interfaces and at the Si grain boundaries with no segregation of the As in the Si layer. Such an effect is in agreement with a model that assumes a traps distribution in the Si in the first 2-3 nm above the SiO{sub 2}/Si interfaces and along the Si grain boundaries. The traps concentration at the Si/SiO{sub 2} interfaces was estimated in 10{sup 14} traps/cm{sup 2}. The outlined results can open perspectives on the doping properties of As in Si nanocrystals, whose applications in nanoelectronics and optoelectronics are widely investigated (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Structural and optical properties of germanium nanostructures on Si(100 and embedded in high-k oxides

    Directory of Open Access Journals (Sweden)

    Ray Samit

    2011-01-01

    Full Text Available Abstract The structural and optical properties of Ge quantum dots (QDs grown on Si(001 for mid-infrared photodetector and Ge nanocrystals embedded in oxide matrices for floating gate memory devices are presented. The infrared photoluminescence (PL signal from Ge islands has been studied at a low temperature. The temperature- and bias-dependent photocurrent spectra of a capped Si/SiGe/Si(001 QDs infrared photodetector device are presented. The properties of Ge nanocrystals of different size and density embedded in high-k matrices grown using radio frequency magnetron sputtering have been studied. Transmission electron micrographs have revealed the formation of isolated spherical Ge nanocrystals in high-k oxide matrix of sizes ranging from 4 to 18 nm. Embedded nanocrystals in high band gap oxides have been found to act as discrete trapping sites for exchanging charge carriers with the conduction channel by direct tunneling that is desired for applications in floating gate memory devices.

  16. Symmetry breaking during seeded growth of nanocrystals.

    Science.gov (United States)

    Xia, Xiaohu; Xia, Younan

    2012-11-14

    Currently, most of the reported noble-metal nanocrystals are limited to a high level of symmetry, as constrained by the inherent, face-centered cubic (fcc) lattice of these metals. In this paper, we report, for the first time, a facile and versatile approach (backed up by a clear mechanistic understanding) for breaking the symmetry of an fcc lattice and thus obtaining nanocrystals with highly unsymmetrical shapes. The key strategy is to induce and direct the growth of nanocrystal seeds into unsymmetrical modes by manipulating the reduction kinetics. With silver as an example, we demonstrated that the diversity of possible shapes taken by noble-metal nanocrystals could be greatly expanded by incorporating a series of new shapes drastically deviated from the fcc lattice. This work provides a new method to investigate shape-controlled synthesis of metal nanocrystal.

  17. Measuring the Valence of Nanocrystal Surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Owen, Jonathan Scharle [Columbia Univ., New York, NY (United States)

    2016-11-30

    The goal of this project is to understand and control the interplay between nanocrystal stoichiometry, surface ligand binding and exchange, and the optoelectronic properties of semiconductor nanocrystals in solution and in thin solid films. We pursued three research directions with this goal in mind: 1) We characterized nanocrystal stoichiometry and its influence on the binding of L-type and X-type ligands, including the thermodynamics of binding and the kinetics of ligand exchange. 2) We developed a quantitative understanding of the relationship between surface ligand passivation and photoluminescence quantum yield. 3) We developed methods to replace the organic ligands on the nanocrystal with halide ligands and controllably deposit these nanocrystals into thin films, where electrical measurements were used to investigate the electrical transport and internanocrystal electronic coupling.

  18. Structure and Spatial Distribution of Ge Nanocrystals Subjected to Fast Neutron Irradiation

    Directory of Open Access Journals (Sweden)

    Alexander N. Ionov

    2011-07-01

    Full Text Available The influence of fast neutron irradiation on the structure and spatial distribution of Ge nanocrystals (NC embedded in an amorphous SiO2 matrix has been studied. The investigation was conducted by means of laser Raman Scattering (RS, High Resolution Transmission Electron Microscopy (HR-TEM and X-ray photoelectron spectroscopy (XPS. The irradiation of Ge- NC samples by a high dose of fast neutrons lead to a partial destruction of the nanocrystals. Full reconstruction of crystallinity was achieved after annealing the radiation damage at 8000C, which resulted in full restoration of the RS spectrum. HR-TEM images show, however, that the spatial distributions of Ge-NC changed as a result of irradiation and annealing. A sharp decrease in NC distribution towards the SiO2 surface has been observed. This was accompanied by XPS detection of Ge oxides and elemental Ge within both the surface and subsurface region.

  19. Silicon-substituted hydroxyapatite coating with Si content on the nanotube-formed Ti–Nb–Zr alloy using electron beam-physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Yong-Hoon [Division of Restorative, Prosthetic and Primary Care Dentistry, College of Dentistry, The Ohio State University, 305 W. 12th Ave., Columbus, OH (United States); Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Choe, Han-Cheol, E-mail: hcchoe@chosun.ac.kr [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Brantley, William A. [Division of Restorative, Prosthetic and Primary Care Dentistry, College of Dentistry, The Ohio State University, 305 W. 12th Ave., Columbus, OH (United States)

    2013-11-01

    The purpose of this study was to investigate the electrochemical characteristics of silicon-substituted hydroxyapatite coatings on the nanotube-formed Ti–35Nb–10Zr alloy. The silicon-substituted hydroxyapatite (Si–HA) coatings on the nanotube structure were deposited by electron beam-physical vapor deposition and anodization methods, and biodegradation properties were analyzed by potentiodynamic polarization and electrochemical impedance spectroscopy measurement. The surface characteristics were analyzed by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction (XRD). The Si–HA layers were deposited with rough features having highly ordered nanotube structures on the titanium alloy substrate. The thickness of the Si–HA coating was less than that of the HA coating. The XRD results confirmed that the Si–HA coating on the nanotube structure consisted of TiO{sub 2} anatase, TiO{sub 2} rutile, hydroxyapatite, and calcium phosphate silicate. The Si–HA coating surface exhibited lower I{sub corr} than the HA coating, and the polarization resistance was increased by substitution of silicon in hydroxyapatite. - Highlights: • Silicon substituted hydroxyapatite (Si–HA) was coated on nanotubular titanium alloy. • The Si–HA coating thickness was less than single hydroxyapatite (HA) coating. • Si–HA coatings consisted of TiO{sub 2}, HA, and Ca{sub 5}(PO{sub 4}){sub 2}SiO{sub 4}. • Polarization resistance of the coating was increased by Si substitution in HA.

  20. Organo-Functionalization of Silicon Nanocrystals Synthesized by Inductively Coupled Plasma Chemical Vapor Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Don-Sung; Choe, Dong-Hoe; Jeong, Hyun-Dam [Chonnam National University, Gwangju (Korea, Republic of); Yoo, Seung-Wan; Kim, Jung-Hyung [Korea Research Institute of Standards and Science, Daejeon (Korea, Republic of)

    2016-05-15

    Octadecyl-terminated silicon nanocrystals (ODE-Si NCs) are obtained via a surface-initiated thermal hydrosilylation reaction on hydride-terminated Si NCs (H-Si NCs). Pristine Si NCs were synthesized at the gram scale by using inductively coupled plasma chemical vapor deposition (ICP-CVD) . The H-Si NCs were produced through a chemical etching process with hydrofluoric acid (HF), ethanol (EtOH), and distilled water (d-H{sub 2}O). The results obtained from X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) indicate that the synthesized Si NCs obtained via ICP-CVD have diamond cubic-structured silicon with a grain size of 10 nm and a densely packed Si NC array consisting of individual NCs. Organo-functionalized Si NCs, i.e., ODE-Si NCs, are well soluble in organic solvent whereas pristine Si NCs synthesized through ICP-CVD are not. The surface chemistry of the ODE-Si NCs was confirmed via Fourier transform infrared spectroscopy (FT-IR), proton nuclear magnetic resonance spectroscopy ({sup 1}H-NMR), and field emission transmission electron microscopy (FE-TEM). Thereby, these newly synthesized and scalable organo-functionalized Si NCs are applicable as raw materials for practical use in devices by tuning the surface chemistry with various capping molecules.

  1. Effect of argon implantation on solid-state dewetting: control of size and surface density of silicon nanocrystals.

    Science.gov (United States)

    Almadori, Y; Borowik, Ł; Chevalier, N; Barbé, J-C

    2017-01-27

    Thermally induced solid-state dewetting of ultra-thin films on insulators is a process of prime interest, since it is capable of easily forming nanocrystals. If no particular treatment is performed to the film prior to the solid-state dewetting, it is already known that the size, the shape and the density of nanocrystals is governed by the initial film thickness. In this paper, we report a novel approach to control the size and the surface density of silicon nanocrystals based on an argon-implantation preliminary surface treatment. Using 7.5 nm thin layers of silicon, we show that increasing the implantation dose tends to form smaller silicon nanocrystals with diameter and height lower than 50 nm and 30 nm, respectively. Concomitantly, the surface density is increased by a factor greater than 20, going from 5 μm -2 to values over 100 μm -2 .

  2. Hydrothermal Synthesis of PbTiO3 Nanocrystals with a pH-Adjusting Agent of Ammonia Solution

    Science.gov (United States)

    Li, Xinyi; Huang, Zhixiong; Zhang, Lianmeng; Guo, Dongyun

    2018-05-01

    The PbTiO3 nanocrystals were synthesized by a hydrothermal method, and ammonia solution was firstly used as a pH-adjusting agent. The effect of ammonia concentration on formation and morphologies of PbTiO3 nanocrystals was investigated. At low ammonia concentration (0-2.2 mol/L), no perovskite PbTiO3 phase was formed. When the ammonia concentration was 4.4 mol/L, the rod-like PbTiO3 nanocrystals with highly crystalline were successfully synthesized. As the ammonia concentration further increased to 13.2 mol/L, the flake-like PbTiO3 nanocrystals were formed.

  3. Simple eco-friendly synthesis of the surfactant free SnS nanocrystal toward the photoelectrochemical cell application.

    Science.gov (United States)

    Huang, Xiaoguang; Woo, Heechul; Wu, Peinian; Hong, Hyo Jin; Jung, Wan Gil; Kim, Bong-Joong; Vanel, Jean-Charles; Choi, Jin Woo

    2017-11-28

    A simple, low cost, non-toxic and eco-friendly pathway for synthesizing efficient sunlight-driven tin sulfide photocatalyst was studied. SnS nanocrystals were prepared by using mechanical method. The bulk SnS was obtained by evaporation of SnS nanocrystal solution. The synthesized samples were characterized by using XRD, SEM, TEM, UV-vis, and Raman analyses. Well crystallized SnS nanocrystals were verified and the electrochemical characterization was also performed under visible light irradiation. The SnS nanocrystals have shown remarkable photocurrent density of 7.6 mA cm -2 under 100 mW cm -2 which is about 10 times larger than that of the bulk SnS under notably stable operation conditions. Furthermore, the SnS nanocrystals presented higher stability than the bulk form. The IPCE(Incident photon to current conversion efficiency) of 9.3% at 420 nm was obtained for SnS nanocrystal photoanode which is strikingly higher than that of bulk SnS, 0.78%. This work suggests that the enhancement of reacting area by using SnS nanocrystal absorbers could give rise to the improvement of photoelectrochemical cell efficiency.

  4. Formation and transformation of the radiation-induced nearsurface color centers in sodium and lithium fluorides nanocrystals

    Science.gov (United States)

    Novikov, A. N.; Kalinov, V. S.; Radkevich, A. V.; Runets, L. P.; Stupak, A. P.; Voitovich, A. P.

    2017-11-01

    Near-surface color centers in sodium fluoride nanocrystals have been formed. At pre-irradiation annealing of sodium and lithium fluorides samples at temperatures of 623 K and above, the near-surface color centers in them have not been found after γ-irradiation. Annealing lithium fluoride nanocrystals with the near-surface defects leads to their transformation into bulk ones of the same composition.

  5. Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition

    Science.gov (United States)

    Cao, Yan-Qiang; Wu, Bing; Wu, Di; Li, Ai-Dong

    2017-05-01

    In situ-formed SiO2 was introduced into HfO2 gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO2/SiO2 high-k gate dielectric stacks on Ge have been well investigated. It has been demonstrated that Si-O-Ge interlayer is formed on Ge surface during the in situ PEALD SiO2 deposition process. This interlayer shows fantastic thermal stability during annealing without obvious Hf-silicates formation. In addition, it can also suppress the GeO2 degradation. The electrical measurements show that capacitance equivalent thickness of 1.53 nm and a leakage current density of 2.1 × 10-3 A/cm2 at gate bias of Vfb + 1 V was obtained for the annealed sample. The conduction (valence) band offsets at the HfO2/SiO2/Ge interface with and without PDA are found to be 2.24 (2.69) and 2.48 (2.45) eV, respectively. These results indicate that in situ PEALD SiO2 may be a promising interfacial control layer for the realization of high-quality Ge-based transistor devices. Moreover, it can be demonstrated that PEALD is a much more powerful technology for ultrathin interfacial control layer deposition than MOCVD.

  6. Effects of ultrasonic irradiation on crystallization and structural properties of EMT-type zeolite nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Ng, Eng-Poh, E-mail: epng@usm.my [School of Chemical Sciences, Universiti Sains Malaysia, USM, 11800 Penang (Malaysia); Awala, Hussein [Laboratoire Catalyse & Spectrochimie, CNRS-ENSICAEN, Université de Caen (France); Ghoy, Jia-Pei [School of Chemical Sciences, Universiti Sains Malaysia, USM, 11800 Penang (Malaysia); Vicente, Aurélie [Laboratoire Catalyse & Spectrochimie, CNRS-ENSICAEN, Université de Caen (France); Ling, Tau Chuan [Institute of Biological Sciences, Faculty of Science, University of Malaya (Malaysia); Ng, Yun Hau [School of Chemical Engineering, The University of New South Wales, Sydney (Australia); Mintova, Svetlana [Laboratoire Catalyse & Spectrochimie, CNRS-ENSICAEN, Université de Caen (France); Adam, Farook, E-mail: farook@usm.my [School of Chemical Sciences, Universiti Sains Malaysia, USM, 11800 Penang (Malaysia)

    2015-06-01

    Synthesis of EMT zeolite nanocrystals from rice husk ash biomass (RHA) under continuous ultrasonic irradiation is reported. The aging, nucleation and crystallization stages of EMT zeolite in the system were monitored at ambient temperature, and compared with the conventional hydrothermal method. It was found that ultrasonic wave induced rapid crystal growth of the nanosized EMT zeolite. Complete crystallization of EMT nanocrystals was achieved within 24 h which was much faster than conventional hydrothermal synthesis (36 h). Furthermore, XRD and TEM analyses revealed that more nuclei were formed during the nucleation stage, allowing the preparation of smaller zeolite nanocrystals with high crystallinity. The results also showed that sonocrystallization produced EMT zeolite with high yield (ca. 80%). The ultrasound-prepared EMT nanocrystals were also found to have high porosity and high hydrophilicity, making the material promising for water sorption applications including vapor sensing, heat pump and adsorption technologies. - Highlights: • Nanosized EMT zeolites are formed from rice husk ash under ultrasonic irradiation. • The effects of ultrasonic waves in nanosized EMT zeolite synthesis are studied. • Ultrasound induces rapid crystal growth and produces high zeolite yield. • Smaller zeolite nanocrystals with high crystallinity and large defect sites are obtained. • Improved surface hydrophilicity of crystals is beneficial for water sorption applications.

  7. Volumetric flame synthesis of well-defined molybdenum oxide nanocrystals.

    Science.gov (United States)

    Merchan-Merchan, Wilson; Saveliev, Alexei V; Desai, Milind

    2009-11-25

    Well-defined faceted inorganic Mo oxide nanocrystals are synthesized in the gas phase using a solid-fed-precursor flame synthesis method. The solid crystals have rectangular cross-section with characteristic size of 10-20 nm and with lengths ranging from 50 nm to a few hundred nanometres. A 1 mm diameter high purity Mo probe introduced in the oxygen-rich part of the flame serves as the material source. A combination of the strong temperature gradient and varying chemical species concentrations within the flame volume provides the ideal conditions for the rapid and direct formation of these unique nanocrystals. Oxidation and evaporation of MoO3 in the oxygen-rich zone are followed by reduction to MoO2 in the lower temperature, more fuel-rich zone. The MoO3 vapours formed are pushed in the direction of the gas flow and transformed into mature well-defined convex polyhedron nanocrystals bounded with six faces resembling rectangular parallelepipeds.

  8. Adsorption and spectroscopic characterization of lactoferrin on hydroxyapatite nanocrystals.

    Science.gov (United States)

    Iafisco, Michele; Di Foggia, Michele; Bonora, Sergio; Prat, Maria; Roveri, Norberto

    2011-01-28

    Lactoferrin (LF), a well-characterized protein of blood plasma and milk with antioxidant, cariostatic, anticarcinogenic and anti-inflammatory properties, has been adsorbed onto biomimetic hydroxyapatite (HA) nanocrystals at two different pH values (7.4 and 9.0). The interaction was herein investigated by spectroscopic, thermal and microscopic techniques. The positive electrostatic surface potential of LF at pH 7.4 allows a strong surface interaction with the slightly negative HA nanocrystals and avoids the protein-protein interaction, leading to the formation of a coating protein monolayer. In contrast, at pH 9.0 the surface potential of LF is a mix of negative and positive zones favouring the protein-protein interaction and reducing the interaction with HA nanocrystals; as a result a double layer of coating protein was formed. These experimental findings are supported by the good fittings of the adsorption isotherms by different theoretical models according to Langmuir, Freundlich and Langmuir-Freundlich models. The nanosized HA does not appreciably affect the conformation of the adsorbed protein. In fact, using FT-Raman and FT-IR, we found that after adsorption the protein was only slightly unfolded with a small fraction of the α-helix structure being converted into turn, while the β-sheet content remained almost unchanged. The bioactive surface of HA functionalized with LF could be utilized to improve the material performance towards the biological environment for biomedical applications.

  9. Systematic spatial and stoichiometric screening towards understanding the surface of ultrasmall oxygenated silicon nanocrystal

    Energy Technology Data Exchange (ETDEWEB)

    Niaz, Shanawer, E-mail: shanawersi@gmail.com [Department of Physics, Bilkent University, Ankara 06800 (Turkey); Molecular Engineering Laboratory, at the Department of Physics, University of Patras, Patras, GR-26500 (Greece); Zdetsis, Aristides D.; Koukaras, Emmanuel N. [Molecular Engineering Laboratory, at the Department of Physics, University of Patras, Patras, GR-26500 (Greece); Gülseren, Oǧuz [Department of Physics, Bilkent University, Ankara 06800 (Turkey); Sadiq, Imran [Centre of Excellence in Solid State Physics, University of the Punjab, Lahore (Pakistan)

    2016-11-30

    Highlights: • Understanding surface science of oxygenated silicon nanocrystals by means of their composition, stoichiometry and spatial distribution. • Drastic change observed in binding energy, localization of frontier orbitals and HOMO-LUMO gap up to 1.48 eV. • Might be a safe alternative of size dependent bandgap tunability. - Abstract: In most of the realistic ab initio and model calculations which have appeared on the emission of light from silicon nanocrystals, the role of surface oxygen has been usually ignored, underestimated or completely ruled out. We investigate theoretically, by density functional theory (DFT/B3LYP) possible modes of oxygen bonding in hydrogen terminated silicon quantum dots using as a representative case of the Si{sub 29} nanocrystal. We have considered Bridge-bonded oxygen (BBO), Doubly-bonded oxygen (DBO), hydroxyl (OH) and Mix of these oxidizing agents. Due to stoichiometry, all comparisons performed are unbiased with respect to composition whereas spatial distribution of oxygen species pointed out drastic change in electronic and cohesive characteristics of nanocrytals. From an overall perspective of this study, it is shown that bridge bonded oxygenated Si nanocrystals accompanied by Mix have higher binding energies and large electronic gap compared to nanocrystals with doubly bonded oxygen atoms. In addition, it is observed that the presence of OH along with BBO, DBO and mixed configurations further lowers electronic gaps and binding energies but trends in same fashion. It is also demonstrated that within same composition, oxidizing constituent, along with their spatial distribution substantially alters binding energy, highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) gap (up to 1.48 eV) and localization of frontier orbitals.

  10. Systematic spatial and stoichiometric screening towards understanding the surface of ultrasmall oxygenated silicon nanocrystal

    International Nuclear Information System (INIS)

    Niaz, Shanawer; Zdetsis, Aristides D.; Koukaras, Emmanuel N.; Gülseren, Oǧuz; Sadiq, Imran

    2016-01-01

    Highlights: • Understanding surface science of oxygenated silicon nanocrystals by means of their composition, stoichiometry and spatial distribution. • Drastic change observed in binding energy, localization of frontier orbitals and HOMO-LUMO gap up to 1.48 eV. • Might be a safe alternative of size dependent bandgap tunability. - Abstract: In most of the realistic ab initio and model calculations which have appeared on the emission of light from silicon nanocrystals, the role of surface oxygen has been usually ignored, underestimated or completely ruled out. We investigate theoretically, by density functional theory (DFT/B3LYP) possible modes of oxygen bonding in hydrogen terminated silicon quantum dots using as a representative case of the Si 29 nanocrystal. We have considered Bridge-bonded oxygen (BBO), Doubly-bonded oxygen (DBO), hydroxyl (OH) and Mix of these oxidizing agents. Due to stoichiometry, all comparisons performed are unbiased with respect to composition whereas spatial distribution of oxygen species pointed out drastic change in electronic and cohesive characteristics of nanocrytals. From an overall perspective of this study, it is shown that bridge bonded oxygenated Si nanocrystals accompanied by Mix have higher binding energies and large electronic gap compared to nanocrystals with doubly bonded oxygen atoms. In addition, it is observed that the presence of OH along with BBO, DBO and mixed configurations further lowers electronic gaps and binding energies but trends in same fashion. It is also demonstrated that within same composition, oxidizing constituent, along with their spatial distribution substantially alters binding energy, highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) gap (up to 1.48 eV) and localization of frontier orbitals.

  11. Communication: Visualization and spectroscopy of defects induced by dehydrogenation in individual silicon nanocrystals

    Science.gov (United States)

    Kislitsyn, Dmitry A.; Mills, Jon M.; Kocevski, Vancho; Chiu, Sheng-Kuei; DeBenedetti, William J. I.; Gervasi, Christian F.; Taber, Benjamen N.; Rosenfield, Ariel E.; Eriksson, Olle; Rusz, Ján; Goforth, Andrea M.; Nazin, George V.

    2016-06-01

    We present results of a scanning tunneling spectroscopy (STS) study of the impact of dehydrogenation on the electronic structures of hydrogen-passivated silicon nanocrystals (SiNCs) supported on the Au(111) surface. Gradual dehydrogenation is achieved by injecting high-energy electrons into individual SiNCs, which results, initially, in reduction of the electronic bandgap, and eventually produces midgap electronic states. We use theoretical calculations to show that the STS spectra of midgap states are consistent with the presence of silicon dangling bonds, which are found in different charge states. Our calculations also suggest that the observed initial reduction of the electronic bandgap is attributable to the SiNC surface reconstruction induced by conversion of surface dihydrides to monohydrides due to hydrogen desorption. Our results thus provide the first visualization of the SiNC electronic structure evolution induced by dehydrogenation and provide direct evidence for the existence of diverse dangling bond states on the SiNC surfaces.

  12. Growth of ZnO nanocrystals in silica by rf co-sputter deposition and post-annealing

    International Nuclear Information System (INIS)

    Siva Kumar, V.V.; Singh, F.; Kumar, Amit; Avasthi, D.K.

    2006-01-01

    Thin films with ZnO nanocrystals in silica were synthesized by rf reactive magnetron co-sputter deposition and post-annealing. The films were deposited from a ZnO/Si composite target in an rf oxygen plasma. The deposited films were annealed in air/vacuum at high temperatures to grow ZnO nanocrystals. The deposited and annealed films were characterized by X-ray diffraction (XRD), fourier transform infrared spectroscopy (FT-IR), uv-vis spectroscopy (UV-VIS) and photoluminescence (PL) measurements. FT-IR results of the films show the vibrational features of Si-O-Si and Zn-O bonds. UV-VIS spectra of the deposited film shows the band edge of ZnO. The XRD results of the films annealed at 750 deg. C and 1000 deg. C indicate the growth of ZnO nanocrystals with average crystallite sizes between 7 nm and 26 nm. PL measurements of the deposited film show a broad visible luminescence peak which can be due to ZnO. These results suggest the growth of ZnO nanocrystals in silica matrix

  13. X-Ray Absorption Studies of Vanadium-Containing Metal Oxide Nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Hohn, Keith, L.

    2006-01-09

    Metal oxide nanocrystals offer significant potential for use as catalysts or catalyst supports due to their high surface areas and unique chemical properties that result from the high number of exposed corners and edges. However, little is known about the catalytic activity of these materials, especially as oxidation catalysts. This research focused on the preparation, characterization and use of vanadium-containing nanocrystals as selective oxidation catalysts. Three vanadium-containing nanocrystals were prepared using a modified sol-gel procedure: V/MgO, V/SiO2, and vanadium phosphate (VPO). These represent active oxidation catalysts for a number of industrially relevant reactions. The catalysts were characterized by x-ray diffraction and Raman, UV-VIS, infrared and x-ray absorption spectroscopies with the goal of determining the primary structural and chemical differences between nanocrystals and microcrystals. The catalytic activity of these catalysts was also studied in oxidative dehydrogenation of butane and methanol oxidation to formaldehyde. V/MgO nanocrystals were investigated for activity in oxidative dehydrogenation of butane and compared to conventional V/MgO catalysts. Characterization of V/MgO catalysts using Raman spectroscopy and x-ray absorption spectroscopy showed that both types of catalysts contained magnesium orthovanadate at vanadium loadings below 15 weight%, but above that loading, magnesium pyrovanadate may have been present. In general, MgO nanocrystals had roughly half the crystal size and double the surface area of the conventional MgO. In oxidative dehydrogenation of butane, nanocrystalline V/MgO gave higher selectivity to butene than conventional V/MgO at the same conversion. This difference was attributed to differences in vanadium domain size resulting from the higher surface areas of the nanocrystalline support, since characterization suggested that similar vanadium phases were present on both types of catalysts. Experiments in

  14. In situ development of self-reinforced cellulose nanocrystals based thermoplastic elastomers by atom transfer radical polymerization.

    Science.gov (United States)

    Yu, Juan; Wang, Chunpeng; Wang, Jifu; Chu, Fuxiang

    2016-05-05

    Recently, the utilization of cellulose nanocrystals (CNCs) as a reinforcing material has received a great attention due to its high elastic modulus. In this article, a novel strategy for the synthesis of self-reinforced CNCs based thermoplastic elastomers (CTPEs) is presented. CNCs were first surface functionalized with an initiator for surface-initiated atom transfer radical polymerization (SI-ATRP). Subsequently, SI-ATRP of methyl methacrylate (MMA) and butyl acrylate (BA) was carried out in the presence of sacrificial initiator to form CTPEs in situ. The CTPEs together with the simple blends of CNCs and linear poly(MMA-co-BA) copolymer (P(MMA-co-BA)) were characterized for comparative study. The results indicated that P(MMA-co-BA) was successfully grafted onto the surface of CNCs and the compatibility between CNCs and the polymer matrix in CTPEs was greatly enhanced. Specially, the CTPEs containing 2.15wt% CNCs increased Tg by 19.2°C and tensile strength by 100% as compared to the linear P(MMA-co-BA). Copyright © 2016 Elsevier Ltd. All rights reserved.

  15. Nanocrystals in the glass and centers of localization of free charge carriers in the thick-film resistors

    International Nuclear Information System (INIS)

    Abdurakhmanov, G.

    2012-01-01

    Conduction mechanism of doped silicate glass (DSG) based on existence of nanocrystals in the glass is proposed. These nanocrystals act as localization centers of free charge carriers. Random distribution of the nanocrystal's sizes and distances between them leads to charge transport by variable length hopping. It is shown that dopant atoms generate the narrow impurity subband of 0.03 eV in width. This subband joins close to the glass valence band top or slightly (less than 0.01 eV) separated from the last. What is why the hopping mechanism coexists with thermal activation one and at low temperatures (T -n ), 0.25 800 K) structure transitions of nanocrystals take place and conductivity of DSG decreases sharply. Beyond of the minimum of conductivity (above 1000 K) energy gap is formed between the impurity subband and the valence band top of glass, so DSG behaves like a typical semiconductor. (author)

  16. Synthesis of the (N2)3- radical from Y2+ and its protonolysis reactivity to form (N2H2)2- via the Y[N(SiMe3)2]3/KC8 reduction system.

    Science.gov (United States)

    Fang, Ming; Lee, David S; Ziller, Joseph W; Doedens, Robert J; Bates, Jefferson E; Furche, Filipp; Evans, William J

    2011-03-23

    Examination of the Y[N(SiMe(3))(2)](3)/KC(8) reduction system that allowed isolation of the (N(2))(3-) radical has led to the first evidence of Y(2+) in solution. The deep-blue solutions obtained from Y[N(SiMe(3))(2)](3) and KC(8) in THF at -35 °C under argon have EPR spectra containing a doublet at g(iso) = 1.976 with a 110 G hyperfine coupling constant. The solutions react with N(2) to generate (N(2))(2-) and (N(2))(3-) complexes {[(Me(3)Si)(2)N](2)(THF)Y}(2)(μ-η(2):η(2)-N(2)) (1) and {[(Me(3)Si)(2)N](2)(THF)Y}(2)(μ-η(2):η(2)-N(2))[K(THF)(6)] (2), respectively, and demonstrate that the Y[N(SiMe(3))(2)](3)/KC(8) reaction can proceed through an Y(2+) intermediate. The reactivity of (N(2))(3-) radical with proton sources was probed for the first time for comparison with the (N(2))(2-) and (N(2))(4-) chemistry. Complex 2 reacts with [Et(3)NH][BPh(4)] to form {[(Me(3)Si)(2)N](2)(THF)Y}(2)(μ-N(2)H(2)), the first lanthanide (N(2)H(2))(2-) complex derived from dinitrogen, as well as 1 as a byproduct, consistent with radical disproportionation reactivity.

  17. Patterned structures of in situ size controlled CdS nanocrystals in a polymer matrix under UV irradiation

    International Nuclear Information System (INIS)

    Fragouli, D; Pompa, P P; Caputo, G; Cingolani, R; Athanassiou, A; Resta, V; Laera, A M; Tapfer, L

    2009-01-01

    A method of in situ formation of patterns of size controlled CdS nanocrystals in a polymer matrix by pulsed UV irradiation is presented. The films consist of Cd thiolate precursors with different carbon chain lengths embedded in TOPAS polymer matrices. Under UV irradiation the precursors are photolyzed, driving to the formation of CdS nanocrystals in the quantum size regime, with size and concentration defined by the number of incident UV pulses, while the host polymer remains macroscopically/microscopically unaffected. The emission of the formed nanocomposite materials strongly depends on the dimensions of the CdS nanocrystals, thus, their growth at the different phases of the irradiation is monitored using spatially resolved photoluminescence by means of a confocal microscope. X-ray diffraction measurements verified the existence of the CdS nanocrystals, and defined their crystal structure for all the studied cases. The results are reinforced by transmission electron microscopy. It is proved that the selection of the precursor determines the efficiency of the procedure, and the quality of the formed nanocrystals. Moreover it is demonstrated that there is the possibility of laser induced formation of well-defined patterns of CdS nanocrystals, opening up new perspectives in the development of nanodevices.

  18. Nanocrystal conversion chemistry: A unified and materials-general strategy for the template-based synthesis of nanocrystalline solids

    International Nuclear Information System (INIS)

    Vasquez, Yolanda; Henkes, Amanda E.; Chris Bauer, J.; Schaak, Raymond E.

    2008-01-01

    The concept of nanocrystal conversion chemistry, which involves the use of pre-formed nanoparticles as templates for chemical transformation into derivative solids, has emerged as a powerful approach for designing the synthesis of complex nanocrystalline solids. The general strategy exploits established synthetic capabilities in simple nanocrystal systems and uses these nanocrystals as templates that help to define the composition, crystal structure, and morphology of product nanocrystals. This article highlights key examples of 'conversion chemistry' approaches to the synthesis of nanocrystalline solids using a variety of techniques, including galvanic replacement, diffusion, oxidation, and ion exchange. The discussion is organized according to classes of solids, highlighting the diverse target systems that are accessible using similar chemical concepts: metals, oxides, chalcogenides, phosphides, alloys, intermetallic compounds, sulfides, and nitrides. - Graphical abstract: Nanocrystal conversion chemistry uses pre-formed nanoparticles as templates for chemical transformation into derivative solids, helping to define the composition, crystal structure, and morphology of product nanocrystals that have more complex features than their precursor templates. This article highlights the application of this concept to diverse classes of solids, including metals, oxides, chalcogenides, phosphides, alloys, intermetallics, sulfides, and nitrides

  19. Patterned structures of in situ size controlled CdS nanocrystals in a polymer matrix under UV irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Fragouli, D; Pompa, P P; Caputo, G; Cingolani, R; Athanassiou, A [NNL-National Nanotechnology Laboratory, INFM, CNR, Via Arnesano, 73100 Lecce (Italy); Resta, V; Laera, A M; Tapfer, L [ENEA, Centro Ricerche Brindisi, SS7 Appia Km 706, I-72100 Brindisi (Italy)], E-mail: despina.fragouli@unile.it

    2009-04-15

    A method of in situ formation of patterns of size controlled CdS nanocrystals in a polymer matrix by pulsed UV irradiation is presented. The films consist of Cd thiolate precursors with different carbon chain lengths embedded in TOPAS polymer matrices. Under UV irradiation the precursors are photolyzed, driving to the formation of CdS nanocrystals in the quantum size regime, with size and concentration defined by the number of incident UV pulses, while the host polymer remains macroscopically/microscopically unaffected. The emission of the formed nanocomposite materials strongly depends on the dimensions of the CdS nanocrystals, thus, their growth at the different phases of the irradiation is monitored using spatially resolved photoluminescence by means of a confocal microscope. X-ray diffraction measurements verified the existence of the CdS nanocrystals, and defined their crystal structure for all the studied cases. The results are reinforced by transmission electron microscopy. It is proved that the selection of the precursor determines the efficiency of the procedure, and the quality of the formed nanocrystals. Moreover it is demonstrated that there is the possibility of laser induced formation of well-defined patterns of CdS nanocrystals, opening up new perspectives in the development of nanodevices.

  20. Observing the morphology of single-layered embedded silicon nanocrystals by using temperature-stable TEM membranes

    Directory of Open Access Journals (Sweden)

    Sebastian Gutsch

    2015-04-01

    Full Text Available We use high-temperature-stable silicon nitride membranes to investigate single layers of silicon nanocrystal ensembles by energy filtered transmission electron microscopy. The silicon nanocrystals are prepared from the precipitation of a silicon-rich oxynitride layer sandwiched between two SiO2 diffusion barriers and subjected to a high-temperature annealing. We find that such single layers are very sensitive to the annealing parameters and may lead to a significant loss of excess silicon. In addition, these ultrathin layers suffer from significant electron beam damage that needs to be minimized in order to image the pristine sample morphology. Finally we demonstrate how the silicon nanocrystal size distribution develops from a broad to a narrow log-normal distribution, when the initial precipitation layer thickness and stoichiometry are below a critical value.

  1. A novel one-pot room-temperature synthesis route to produce very small photoluminescent silicon nanocrystals

    Science.gov (United States)

    Douglas-Gallardo, Oscar A.; Burgos-Paci, Maxi A.; Mendoza-Cruz, Rubén; Putnam, Karl G.; Josefina Arellano-Jiménez, M.; José-Yacamán, Miguel; Mariscal, Marcelo M.; Macagno, Vicente A.; Sánchez, Cristián G.; Pérez, Manuel A.

    2018-03-01

    A novel strategy to synthesize photoluminescent silicon nanocrystals (SiNCs) from a reaction between tetraethylorthosilicate (TEOS) and trimethyl-hexadecyl-ammonium borohydride (CTABH4) in organic solvent is presented. The formation reaction occurs spontaneously at room temperature in homogeneous phase. The produced silicon nanocrystals are characterized by using their photoluminescent properties and via HRTEM. In addition, theoretical calculations of the optical absorption spectrum of silicon quantum dots in vacuum with different sizes and surface moieties were performed in order to compare with the experimental findings. The new chemical reaction is simple and can be implemented to produce silicon nanocrystal with regular laboratory materials by performing easy and safe procedures. [Figure not available: see fulltext.

  2. Preparation and nonlinear optical properties of indium nanocrystals in sodium borosilicate glass by the sol–gel route

    International Nuclear Information System (INIS)

    Zhong, Jiasong; Xiang, Weidong; Zhao, Haijun; Chen, Zhaoping; Liang, Xiaojuan; Zhao, Wenguang; Chen, Guoxin

    2012-01-01

    Graphical abstract: The sodium borosilicate glass doped with indium nanocrystals have been successfully prepared by sol–gel methods. And the indium nanocrystals in tetragonal crystal system have formed uniformly in the glass, and the average diameter of indium nanocrystals is about 30 nm. The third-order optical nonlinear refractive index γ, absorption coefficient β, and susceptibility χ (3) of the glass are determined to be −4.77 × 10 −16 m 2 /W, 2.67 × 10 −9 m/W, and 2.81 × 10 −10 esu, respectively. Highlights: ► Indium nanocrystals embedded in glass matrix have been prepared by sol–gel route. ► The crystal structure and composition are investigated by XRD and XPS. ► Size and distribution of indium nanocrystals is determined by TEM. ► The third-order optical nonlinearity is investigated by using Z-scan technique. -- Abstract: The sodium borosilicate glass doped with indium nanocrystals have been successfully prepared by sol–gel route. The thermal stability behavior of the stiff gel is investigated by thermogravimetric (TG) and differential thermal (DTA) analysis. The crystal structure of the glass is characterized by X-ray powder diffraction (XRD). Particle composition is determined by X-ray photoelectron spectroscopy (XPS). Size and distribution of the nanocrystals are characterized by transmission electron microscopy (TEM) as well as high-resolution transmission electron microscopy (HRTEM). Results show that the indium nanocrystals in tetragonal crystal structure have formed in glass, and the average diameter is about 30 nm. Further, the glass is measured by Z-scan technique to investigate the nonlinear optical (NLO) properties. The third-order NLO coefficient χ (3) of the glass is determined to be 2.81 × 10 −10 esu. The glass with large third-order NLO coefficient is promising materials for applications in optical devices.

  3. Photoluminescence from ZnO-SiO2 opals with different sphere diameters and thicknesses

    International Nuclear Information System (INIS)

    Yang Yingling; Yan Hongwei; Fu Zhengping; Yang Beifang; Xia Linsheng; Wang Zhen; Zuo Jian; Yu Shijun; Fu Shengquan; Li Fanqing

    2007-01-01

    We systematically investigated the photoluminescence (PL) and transmittance characteristics of ZnO-SiO 2 opals with varied positions of the stop-band and film thicknesses. An improved ultraviolet (UV) luminescence was observed from ZnO-SiO 2 composites over pure ZnO nanocrystals under 325 nm He-Cd laser excitation at room temperature. The UV PL of ZnO nanocrystals in SiO 2 opals with stop-bands center of 410 nm is sensitive to the thickness of opal films, and the UV PL intensity increases with the film thickness increasing. The PL spectra of ZnO nanocrystals in SiO 2 opals with stop-bands center of 570 nm show a suppression of the weak visible band. The experimental results are discussed based on the scattering and/or absorbance in opal crystals

  4. High Temperature AL-Nanocrystal Alloy Synthesis

    National Research Council Canada - National Science Library

    Perepezko, J

    2001-01-01

    Aluminum-rich metallic glasses containing transition metals and rare earth elements have been found to yield finely mixed microstructures of Al nanocrystals embedded in an amorphous matrix and exhibit...

  5. Semiconductor-nanocrystal/conjugated polymer thin films

    Science.gov (United States)

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2014-06-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  6. In-situ synchrotron PXRD study of spinel LiMn2O4 nanocrystal formation

    DEFF Research Database (Denmark)

    Birgisson, Steinar; Jensen, Kirsten Marie Ørnsbjerg; Christiansen, Troels Lindahl

    Many solvothermal reactions have a great potential for environmentally friendly and easily scalable way for producing nanocrystalline materials on an industrial scale. Here we study hydrothermal formation of spinel LiMn2O4 which is a well-known cathode material for Li-ion batteries. The LiMn2O4...... nanoparticles are formed by reducing KMnO4 in an aqueous solution containing Li-ions. The reducing agent is an alcohol (here ethanol) and the reaction takes place under high pressure and temperature. The LiMn2O4 nanocrystals are unstable towards further reduction to Mn3O4 nanocrystals. Possible reaction route...

  7. Electronic structure and self-assembly of cross-linked semiconductor nanocrystal arrays

    International Nuclear Information System (INIS)

    Steiner, Dov; Azulay, Doron; Aharoni, Assaf; Salant, Assaf; Banin, Uri; Millo, Oded

    2008-01-01

    We studied the electronic level structure of assemblies of InAs quantum dots and CdSe nanorods cross-linked by 1,4-phenylenediamine molecules using scanning tunneling spectroscopy. We found that the bandgap in these arrays is reduced with respect to the corresponding ligand-capped nanocrystal arrays. In addition, a pronounced sub-gap spectral structure commonly appeared which can be attributed to unpassivated nanocrystal surface states or associated with linker-molecule-related levels. The exchange of the ligands by the linker molecules also affected the structural array properties. Most significantly, clusters of close-packed standing CdSe nanorods were formed

  8. Photoluminescence of nanocrystals embedded in oxide matrices

    International Nuclear Information System (INIS)

    Estrada, C.; Gonzalez, J.A.; Kunold, A.; Reyes-Esqueda, J.A.; Pereyra, P.

    2006-12-01

    We used the theory of finite periodic systems to explain the photoluminescence spectra dependence on the average diameter of nanocrystals embedded in oxide matrices. Because of the broad matrix band gap, the photoluminescence response is basically determined by isolated nanocrystals and sequences of a few of them. With this model we were able to reproduce the shape and displacement of the experimentally observed photoluminescence spectra. (author)

  9. Spatially Resolved Characterization of Cellulose Nanocrystal-Polypropylene Composite by Confocal Raman Microscopy

    Science.gov (United States)

    Umesh P. Agarwal; Ronald Sabo; Richard S. Reiner; Craig M. Clemons; Alan W. Rudie

    2012-01-01

    Raman spectroscopy was used to analyze cellulose nanocrystal (CNC)–polypropylene (PP) composites and to investigate the spatial distribution of CNCs in extruded composite filaments. Three composites were made from two forms of nanocellulose (CNCs from wood pulp and the nanoscale fraction of microcrystalline cellulose) and two of the three composites investigated used...

  10. Squishy nanotraps: hybrid cellulose nanocrystal-zirconium metallogels for controlled trapping of biomacromolecules.

    Science.gov (United States)

    Sheikhi, A; van de Ven, T G M

    2017-08-11

    A brick-and-mortar-like ultrasoft nanocomposite metallogel is formed by crosslinking cellulose nanocrystals (CNC) with ammonium zirconium carbonate (AZC) to trap and reconfigure dextran, a model biomacromolecule. The bricks (CNC) reinforce the metallogel, compete with dextran in reacting with AZC, and decouple long-time dextran dynamics from network formation, while the mortar (AZC) imparts bimodality to the dextran diffusion.

  11. Applying analytical ultracentrifugation to nanocrystal suspensions

    Energy Technology Data Exchange (ETDEWEB)

    Jamison, Jennifer A; Krueger, Karl M; Mayo, J T; Yavuz, Cafer T; Redden, Jacina J; Colvin, Vicki L, E-mail: colvin@rice.ed [Department of Chemistry, Rice University, 6100 Main Street, MS-60, Houston, TX 77005 (United States)

    2009-09-02

    While applied frequently in physical biochemistry to the study of protein complexes, the quantitative use of analytical ultracentrifugation (AUC) for nanocrystal analysis is relatively rare. Its application in nanoscience is potentially very powerful as it provides a measure of nanocrystal density, size and structure directly in the solution phase. Towards that end, this paper examines the best practices for applying data collection and analysis methods for AUC, geared towards the study of biomolecules, to the unique problems of nanoparticle analysis. Using uniform nanocrystals of cadmium selenide, we compared several schemes for analyzing raw sedimentation data. Comparable values of the mean sedimentation coefficients (s-value) were found using several popular analytical approaches; however, the distribution in sample s-values is best captured using the van Holde-Weischt algorithm. Measured s-values could be reproducibly collected if sample temperature and concentration were controlled; under these circumstances, the variability for average sedimentation values was typically 5%. The full shape of the distribution in s-values, however, is not easily subjected to quantitative interpretation. Moreover, the selection of the appropriate sedimentation speed is crucial for AUC of nanocrystals as the density of inorganic nanocrystals is much larger than that of solvents. Quantitative analysis of sedimentation properties will allow for better agreement between experimental and theoretical models of nanocrystal solution behavior, as well as providing deeper insight into the hydrodynamic size and solution properties of nanomaterials.

  12. Combining Pre- and Post-Nucleation Trajectories for the Synthesis of High FAU-Content Faujasite Nanocrystals from Organic-Free Sols

    Energy Technology Data Exchange (ETDEWEB)

    Khaleel, Maryam; Xu, Wenqian; Lesch, David A.; Tsapatsis, Michael

    2016-06-28

    The effects of synthesis conditions on the FAU/EMT content and the size of nanocrystals, formed from inorganic aluminosilicate sols, were investigated. High resolution transmission electron microscopy imaging and comparison of experimental X-ray diffraction patterns with simulations demonstrated that all materials made starting from synthesis mixtures in the composition range (1.8-33) SiO2: 1 Al2O3: (2.7-33) Na2O: (41-1000) H2O contain FAU/EMT intergrowths. Compositions with low water content increase the FAU fraction up to 0.8 but the crystal size exceeds 100 nm. Extension of the higher FAU purity to nanocrystals was achieved only by first mixing the sol at high water content compositions that favor nanocrystal formation and then - after a certain time - lowering by freeze-drying the water to levels favoring the formation of FAU. Cryogenic transmission electron microscopy and small angle X-ray scattering from representative optically clear and colloidally stable precursor sols (aged and crystallized at ambient temperature) reveal the formation of amorphous aggregates before the detection of crystals, in agreement with earlier findings and an existing model for the aggregative growth of the zeolite MFI. The presence of these amorphous aggregates coincides with the aforementioned state of sol that preserves the original trajectory towards nano-crystals after the pronounced reduction of water content by freeze-drying. If water reduction by freeze-drying is applied earlier (before the detection of amorphous aggregates), the sol follows the low water content trajectory towards larger crystals. Despite this memory effect, the sol at this stage is still agnostic towards FAU or EMT formation, the relative content of which is dominantly determined by the final water content. These findings demonstrate that it is possible to combine the effects of pre-and post-nucleation sol composition to steer crystal size and crystal structure, respectively. They confirm precursor

  13. Genesis, challenges and opportunities for colloidal lead halide perovskite nanocrystals

    Science.gov (United States)

    Akkerman, Quinten A.; Rainò, Gabriele; Kovalenko, Maksym V.; Manna, Liberato

    2018-05-01

    Lead halide perovskites (LHPs) in the form of nanometre-sized colloidal crystals, or nanocrystals (NCs), have attracted the attention of diverse materials scientists due to their unique optical versatility, high photoluminescence quantum yields and facile synthesis. LHP NCs have a `soft' and predominantly ionic lattice, and their optical and electronic properties are highly tolerant to structural defects and surface states. Therefore, they cannot be approached with the same experimental mindset and theoretical framework as conventional semiconductor NCs. In this Review, we discuss LHP NCs historical and current research pursuits, challenges in applications, and the related present and future mitigation strategies explored.

  14. Confined Growth of ZIF-8 Nanocrystals with Tunable Structural Colors

    DEFF Research Database (Denmark)

    Chang, Bingdong; Yang, Yuanqing; Jansen, Henri

    2018-01-01

    Zeolitic imidazolate frameworks (ZIF-8) have promising applications as sensors or catalysts due to their highly porous crystalline structures. While most of the previous studies are based on ZIF-8 crystals either in isolated particles in aqueous environments or in a compact colloidal form, here...... down to ≈100 nm. A wide range of structural colors generated by the ZIF-8 nanocrystals is also observed, which can be attributed to the size-dependent resonant scattering as verified by finite-difference time-domain simulations and classical Mie theory. The scalable fabrication of wafer-based ZIF-8...

  15. Bright trions in direct-bandgap silicon nanocrystals revealed bylow-temperature single-nanocrystal spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Kůsová, Kateřina; Pelant, Ivan; Valenta, J.

    2015-01-01

    Roč. 4, Oct (2015), e336 ISSN 2047-7538 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA ČR GPP204/12/P235 Institutional support: RVO:68378271 Keywords : silicon nanocrystals * single-nanocrystal spectroscopy * luminescing trions Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 13.600, year: 2015

  16. Solution synthesis of germanium nanocrystals

    Science.gov (United States)

    Gerung, Henry [Albuquerque, NM; Boyle, Timothy J [Kensington, MD; Bunge, Scott D [Cuyahoga Falls, OH

    2009-09-22

    A method for providing a route for the synthesis of a Ge(0) nanometer-sized material from. A Ge(II) precursor is dissolved in a ligand heated to a temperature, generally between approximately 100.degree. C. and 400.degree. C., sufficient to thermally reduce the Ge(II) to Ge(0), where the ligand is a compound that can bond to the surface of the germanium nanomaterials to subsequently prevent agglomeration of the nanomaterials. The ligand encapsulates the surface of the Ge(0) material to prevent agglomeration. The resulting solution is cooled for handling, with the cooling characteristics useful in controlling the size and size distribution of the Ge(0) materials. The characteristics of the Ge(II) precursor determine whether the Ge(0) materials that result will be nanocrystals or nanowires.

  17. Polyimide Cellulose Nanocrystal Composite Aerogels

    Science.gov (United States)

    Nguyen, Baochau N.; Meador, Mary Ann; Rowan, Stuart; Cudjoe, Elvis; Sandberg, Anna

    2014-01-01

    Polyimide (PI) aerogels are highly porous solids having low density, high porosity and low thermal conductivity with good mechanical properties. They are ideal for various applications including use in antenna and insulation such as inflatable decelerators used in entry, decent and landing operations. Recently, attention has been focused on stimuli responsive materials such as cellulose nano crystals (CNCs). CNCs are environmentally friendly, bio-renewable, commonly found in plants and the dermis of sea tunicates, and potentially low cost. This study is to examine the effects of CNC on the polyimide aerogels. The CNC used in this project are extracted from mantle of a sea creature called tunicates. A series of polyimide cellulose nanocrystal composite aerogels has been fabricated having 0-13 wt of CNC. Results will be discussed.

  18. Thermal evolution of the morphology, structure, and optical properties of multilayer nanoperiodic systems produced by the vacuum evaporation of SiO and SiO2

    International Nuclear Information System (INIS)

    Ershov, A. V.; Chugrov, I. A.; Tetelbaum, D. I.; Mashin, A. I.; Pavlov, D. A.; Nezhdanov, A. V.; Bobrov, A. I.; Grachev, D. A.

    2013-01-01

    The alternate vacuum evaporation of SiO and SiO 2 from separate sources is used to produce amorphous a-SiO x /SiO 2 multilayer nanoperiodic structures with periods of 5–10 nm and a number of layers of up to 64. The effect of annealing at temperatures T a = 500–1100°C on the structural and optical properties of the nanostructures is studied. The results of transmission electron microscopy of the samples annealed at 1100°C indicate the annealing-induced formation of vertically ordered quasiperiodic arrays of Si nanocrystals, whose dimensions are comparable to the a-SiO x -layer thickness in the initial nanostructures. The nanostructures annealed at 1100°C exhibit size-dependent photoluminescence in the wavelength range 750–830 nm corresponding to Si nanocrystals. The data on infrared absorption and Raman scattering show that the thermal evolution of structural and phase state of the SiO x layers with increasing annealing temperature proceeds through the formation of amorphous Si nanoinclusions with the subsequent formation and growth of Si nanocrystals.

  19. 2009 Clusters, Nanocrystals & Nanostructures GRC

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Lai-Sheng [Washington State Univ., Pullman, WA (United States)

    2009-07-19

    For over thirty years, this Gordon Conference has been the premiere meeting for the field of cluster science, which studies the phenomena that arise when matter becomes small. During its history, participants have witnessed the discovery and development of many novel materials, including C60, carbon nanotubes, semiconductor and metal nanocrystals, and nanowires. In addition to addressing fundamental scientific questions related to these materials, the meeting has always included a discussion of their potential applications. Consequently, this conference has played a critical role in the birth and growth of nanoscience and engineering. The goal of the 2009 Gordon Conference is to continue the forward-looking tradition of this meeting and discuss the most recent advances in the field of clusters, nanocrystals, and nanostructures. As in past meetings, this will include new topics that broaden the field. In particular, a special emphasis will be placed on nanomaterials related to the efficient use, generation, or conversion of energy. For example, we anticipate presentations related to batteries, catalysts, photovoltaics, and thermoelectrics. In addition, we expect to address the controversy surrounding carrier multiplication with a session in which recent results addressing this phenomenon will be discussed and debated. The atmosphere of the conference, which emphasizes the presentation of unpublished results and lengthy discussion periods, ensures that attendees will enjoy a valuable and stimulating experience. Because only a limited number of participants are allowed to attend this conference, and oversubscription is anticipated, we encourage all interested researchers from academia, industry, and government institutions to apply as early as possible. An invitation is not required. We also encourage all attendees to submit their latest results for presentation at the poster sessions. We anticipate that several posters will be selected for 'hot topic' oral

  20. Ultrafast Silicon Photonics with Visible to Mid-Infrared Pumping of Silicon Nanocrystals.

    Science.gov (United States)

    Diroll, Benjamin T; Schramke, Katelyn S; Guo, Peijun; Kortshagen, Uwe R; Schaller, Richard D

    2017-10-11

    Dynamic optical control of infrared (IR) transparency and refractive index is achieved using boron-doped silicon nanocrystals excited with mid-IR optical pulses. Unlike previous silicon-based optical switches, large changes in transmittance are achieved without a fabricated structure by exploiting strong light coupling of the localized surface plasmon resonance (LSPR) produced from free holes of p-type silicon nanocrystals. The choice of optical excitation wavelength allows for selectivity between hole heating and carrier generation through intraband or interband photoexcitation, respectively. Mid-IR optical pumping heats the free holes of p-Si nanocrystals to effective temperatures greater than 3500 K. Increases of the hole effective mass at high effective hole temperatures lead to a subpicosecond change of the dielectric function, resulting in a redshift of the LSPR, modulating mid-IR transmission by as much as 27%, and increasing the index of refraction by more than 0.1 in the mid-IR. Low hole heat capacity dictates subpicosecond hole cooling, substantially faster than carrier recombination, and negligible heating of the Si lattice, permitting mid-IR optical switching at terahertz repetition frequencies. Further, the energetic distribution of holes at high effective temperatures partially reverses the Burstein-Moss effect, permitting the modulation of transmittance at telecommunications wavelengths. The results presented here show that doped silicon, particularly in micro- or nanostructures, is a promising dynamic metamaterial for ultrafast IR photonics.

  1. Stress evolution of Ge nanocrystals in dielectric matrices

    Science.gov (United States)

    Bahariqushchi, Rahim; Raciti, Rosario; Emre Kasapoğlu, Ahmet; Gür, Emre; Sezen, Meltem; Kalay, Eren; Mirabella, Salvatore; Aydinli, A.

    2018-05-01

    Germanium nanocrystals (Ge NCs) embedded in single and multilayer silicon oxide and silicon nitride matrices have been synthesized using plasma enhanced chemical vapor deposition followed by conventional furnace annealing or rapid thermal processing in N2 ambient. Compositions of the films were determined by Rutherford backscattering spectrometry and x-ray photoelectron spectroscopy. The formation of NCs under suitable process conditions was observed with high resolution transmission electron microscope micrographs and Raman spectroscopy. Stress measurements were done using Raman shifts of the Ge optical phonon line at 300.7 cm-1. The effect of the embedding matrix and annealing methods on Ge NC formation were investigated. In addition to Ge NCs in single layer samples, the stress on Ge NCs in multilayer samples was also analyzed. Multilayers of Ge NCs in a silicon nitride matrix separated by dielectric buffer layers to control the size and density of NCs were fabricated. Multilayers consisted of SiN y :Ge ultrathin films sandwiched between either SiO2 or Si3N4 by the proper choice of buffer material. We demonstrated that it is possible to tune the stress state of Ge NCs from compressive to tensile, a desirable property for optoelectronic applications. We also observed that there is a correlation between the stress and the crystallization threshold in which the compressive stress enhances the crystallization, while the tensile stress suppresses the process.

  2. Synthesis and Properties of Nanoparticle Forms Saponite Clay, Cancrinite Zeolite and Phase Mixtures Thereof.

    Science.gov (United States)

    Shao, Hua; Pinnavaia, Thomas J

    2010-09-01

    The low-temperature synthesis (90°C) of nanoparticle forms of a pure phase smectic clay (saponite) and zeolite (cancrinite) is reported, along with phase mixtures thereof. A synthesis gel corresponding to the Si:Al:Mg unit cell composition of saponite (3.6:0.40:3.0) and a NaOH/Si ratio of 1.39 affords the pure phase clay with disordered nanolayer stacking. Progressive increases in the NaOH/Si ratio up to a value of 8.33 results in the co-crystallization of first garronite and then cancrinite zeolites with nanolath morphology. The resulting phase mixtures exhibit a compound particulate structure of intertwined saponite nanolayers and cancrinite nanolaths that cannot be formed through physical mixing of the pure phase end members. Under magnesium-free conditions, pure phase cancrinite nanocrystals are formed. The Si/Al ratio of the reaction mixture affects the particle morphology as well as the chemical composition of the cancrinite zeolite. Ordinarily, cancrinite crystallizes with a Si/Al ratio of 1.0, but a silicon-rich form of the zeolite (Si/Al=1.25) is crystallized at low temperature from a silica rich synthesis gel, as evidenced by (29)Si NMR spectroscopy and XEDS-TEM. Owing to the exceptionally high external surface areas of the pure phase clay (875 m(2)/g) and zeolite end members (8.9 - 40 m(2)/g), as well as their unique mixed phase composites (124 - 329 m(2)/g), these synthetic derivatives are promising model nanoparticles for studies of the bioavailability of poly-aromatic hydrocarbons immobilized in silicate bearing sediments and soils.

  3. Some fundamental and applicative properties of [polymer/nano-SiC] hybrid nanocomposites

    International Nuclear Information System (INIS)

    Kassiba, A; Boucle, J; Makowska-Janusik, M; Errien, N

    2007-01-01

    Hybrid nanocomposites which combine polymer as host matrix and nanocrystals as active elements are promising functional materials for electronics, optics or photonics. In these systems, the physical response is governed by the nanocrystal features (size, surface and defect states), the polymer properties and the polymer-nanocrystal interface. This work reviews some selective nanostructured architectures based on active elements such as silicon carbide (SiC) nanocrystals and polymer host matrices. Beyond an overview of some key properties of the nanocrystals, a main part will be devoted to the electro-optical (EO) properties of SiC based hybrid systems where SiC nanocrystals are embedded in polymer matrices of different chemical nature such as poly-(methylmethacrylate) (PMMA), poly-vinylcarbazole (PVK) or polycarbonate. Using this approach, the organic-inorganic interface effects are emphasised with regard to the dielectric or hole transporting behaviour of PMMA and PVK respectively. These effects are illustrated through different EO responses associated with hybrid composites based on PMMA or PVK

  4. Some fundamental and applicative properties of [polymer/nano-SiC] hybrid nanocomposites

    Science.gov (United States)

    Kassiba, A.; Bouclé, J.; Makowska-Janusik, M.; Errien, N.

    2007-08-01

    Hybrid nanocomposites which combine polymer as host matrix and nanocrystals as active elements are promising functional materials for electronics, optics or photonics. In these systems, the physical response is governed by the nanocrystal features (size, surface and defect states), the polymer properties and the polymer-nanocrystal interface. This work reviews some selective nanostructured architectures based on active elements such as silicon carbide (SiC) nanocrystals and polymer host matrices. Beyond an overview of some key properties of the nanocrystals, a main part will be devoted to the electro-optical (EO) properties of SiC based hybrid systems where SiC nanocrystals are embedded in polymer matrices of different chemical nature such as poly-(methylmethacrylate) (PMMA), poly-vinylcarbazole (PVK) or polycarbonate. Using this approach, the organic-inorganic interface effects are emphasised with regard to the dielectric or hole transporting behaviour of PMMA and PVK respectively. These effects are illustrated through different EO responses associated with hybrid composites based on PMMA or PVK.

  5. Linear electro-optical behavior of hybrid nanocomposites based on silicon carbide nanocrystals and polymer matrices

    Science.gov (United States)

    Bouclé, J.; Kassiba, A.; Makowska-Janusik, M.; Herlin-Boime, N.; Reynaud, C.; Desert, A.; Emery, J.; Bulou, A.; Sanetra, J.; Pud, A. A.; Kodjikian, S.

    2006-11-01

    An electro-optical activity has been recently reported for hybrid nanocomposite thin films where inorganic silicon carbide nanocrystals (ncSiC) are incorporated into polymer matrices. The role of the interface SiC polymer is suggested as the origin of the observed second order nonlinear optical susceptibility in the hybrid materials based on poly-(methylmethacrylate) (PMMA) or poly-( N -vinylcarbazole) matrices. In this work, we report an analysis of the electro-optical response of this hybrid system as a function of the ncSiC content and surface state in order to precise the interface effect in the observed phenomenon. Two specific ncSiC samples with similar morphology and different surface states are incorporated in the PMMA matrix. The effective Pockels parameters of the corresponding hybrid nanocomposites have been estimated up to 7.59±0.74pm/V ( 1wt.% of ncSiC in the matrix). The interfacial region ncSiC polymer is found to play the main role in the observed effect. Particularly, the electronic defects on the ncSiC nanocrystal surface modify the interfacial electrical interactions between the two components. The results are interpreted and discussed on the basis of the strong influence of these active centers in the interfacial region at the nanoscale, which are found to monitor the local hyperpolarizabilities and the macroscopic nonlinear optical susceptibilities. This approach allows us to complete the description and understanding of the electro-optical response in the hybrid SiC /polymer systems.

  6. Surface treatment of nanocrystal quantum dots after film deposition

    Science.gov (United States)

    Sykora, Milan; Koposov, Alexey; Fuke, Nobuhiro

    2015-02-03

    Provided are methods of surface treatment of nanocrystal quantum dots after film deposition so as to exchange the native ligands of the quantum dots for exchange ligands that result in improvement in charge extraction from the nanocrystals.

  7. Synthesis and Characterization of Colloidal Metal and Photovoltaic Semiconductor Nanocrystals

    KAUST Repository

    Abulikemu, Mutalifu

    2014-01-01

    -performing photovoltaic nanocrystals contain toxic elements, such as Pb, or scarce elements, such as In; thus, the production of solution-processable nanocrystals from earth-abundant materials using environmentally benign synthesis and processing methods has become a

  8. Near-infrared light emitting device using semiconductor nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Supran, Geoffrey J.S.; Song, Katherine W.; Hwang, Gyuweon; Correa, Raoul Emile; Shirasaki, Yasuhiro; Bawendi, Moungi G.; Bulovic, Vladimir; Scherer, Jennifer

    2018-04-03

    A near-infrared light emitting device can include semiconductor nanocrystals that emit at wavelengths beyond 1 .mu.m. The semiconductor nanocrystals can include a core and an overcoating on a surface of the core.

  9. Light Scattering Spectroscopies of Semiconductor Nanocrystals (Quantum Dots)

    International Nuclear Information System (INIS)

    Yu, Peter Y; Gardner, Grat; Nozaki, Shinji; Berbezier, Isabelle

    2006-01-01

    We review the study of nanocrystals or quantum dots using inelastic light scattering spectroscopies. In particular recent calculations of the phonon density of states and low frequency Raman spectra in Ge nanocrystals are presented for comparison with experimental results

  10. Electron energy-loss spectroscopy of single nanocrystals: mapping of tin allotropes

    Science.gov (United States)

    Roesgaard, Søren; Ramasse, Quentin; Chevallier, Jacques; Fyhn, Mogens; Julsgaard, Brian

    2018-05-01

    Using monochromated electron energy-loss spectroscopy (EELS), we are able to map different allotropes in Sn-nanocrystals embedded in Si. It is demonstrated that α-Sn and β-Sn, as well as an interface related plasmon, can be distinguished in embedded Sn-nanostructures. The EELS data is interpreted by standard non-negative matrix factorization followed by a manual Lorentzian decomposition. The decomposition allows for a more physical understanding of the EELS mapping without reducing the level of information. Extending the analysis from a reference system to smaller nanocrystals demonstrates that allotrope determination in nanoscale systems down below 5 nm is possible. Such local information proves the use of monochromated EELS mapping as a powerful technique to study nanoscale systems. This possibility enables investigation of small nanostructures that cannot be investigated through other means, allowing for a better understanding and thus leading to realizations that can result in nanomaterials with improved properties.

  11. Electronic structure and photocatalytic activity of wurtzite Cu–Ga–S nanocrystals and their Zn substitution

    KAUST Repository

    Kandiel, Tarek

    2015-03-23

    Stoichiometric and gallium-rich wurtzite Cu-Ga-S ternary nanocrystals were synthesized via a facile solution-based hot injection method using 1-dodecanethiol as a sulfur source. The use of 1-dodecanethiol was found to be essential not only as a sulfur source but also as a structure-directing reagent to form a metastable wurtzite structure. In addition, the substitution of zinc in the wurtzite gallium-rich Cu-Ga-S nanocrystals was also investigated. The obtained nanocrystals were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), diffuse reflectance spectroscopy (DRS), photoluminescence (PL), and inductively coupled plasma atomic emission spectroscopy (ICP-OES). Electronic structures of pristine and the Zn-substituted Cu-Ga-S system were investigated using density functional theory (DFT) with HSE06 exchange-correlation functional. The calculated bandgaps accurately reflect the measured ones. The allowed electronic transitions occur upon the photon absorption from the (Cu + S) band towards the (Ga + S) one. The Zn substitution was found not to contribute to the band edge structure and hence altered the bandgaps only slightly, the direct transition nature remaining unchanged with the Zn substitution. The photocatalytic activities of H2 evolution from an aqueous Na2S/Na2SO3 solution under visible-light illumination on the synthesized nanocrystals were investigated. While the stoichiometric CuGaS2 exhibited negligible activity, the gallium-rich Cu-Ga-S ternary nanocrystals displayed reasonable activity. The optimum Zn substitution in the gallium-rich Cu-Ga-S ternary nanocrystals enhanced the H2 evolution rate, achieving an apparent quantum efficiency of >6% at 400 nm. © 2015 The Royal Society of Chemistry.

  12. Processing of Copper Zinc Tin Sulfide Nanocrystal Dispersions for Thin Film Solar Cells

    Science.gov (United States)

    Williams, Bryce Arthur

    A scalable and inexpensive renewable energy source is needed to meet the expected increase in electricity demand throughout the developed and developing world in the next 15 years without contributing further to global warming through CO2 emissions. Photovoltaics may meet this need but current technologies are less than ideal requiring complex manufacturing processes and/or use of toxic, rare-earth materials. Copper zinc tin sulfide (Cu 2ZnSnS4, CZTS) solar cells offer a true "green" alternative based upon non-toxic and abundant elements. Solution-based processes utilizing CZTS nanocrystal dispersions followed by high temperature annealing have received significant research attention due to their compatibility with traditional roll-to-roll coating processes. In this work, CZTS nanocrystal (5-35 nm diameters) dispersions were utilized as a production pathway to form solar absorber layers. Aerosol-based coating methods (aerosol jet printing and ultrasonic spray coating) were optimized for formation of dense, crack-free CZTS nanocrystal coatings. The primary variables underlying determination of coating morphology within the aerosol-coating parameter space were investigated. It was found that the liquid content of the aerosol droplets at the time of substrate impingement play a critical role. Evaporation of the liquid from the aerosol droplets during coating was altered through changes to coating parameters as well as to the CZTS nanocrystal dispersions. In addition, factors influencing conversion of CZTS nanocrystal coatings into dense, large-grained polycrystalline films suitable for solar cell development during thermal annealing were studied. The roles nanocrystal size, carbon content, sodium uptake, and sulfur pressure were found to have pivotal roles in film microstructure evolution. The effects of these parameters on film morphology, grain growth rates, and chemical makeup were analyzed from electron microscopy images as well as compositional analysis

  13. Cellulose nanocrystal: electronically conducting polymer nanocomposites for supercapacitors

    OpenAIRE

    Liew, Soon Yee

    2012-01-01

    This thesis describes the use of cellulose nanocrystals for the fabrication of porous nanocomposites with electronic conducting polymers for electrochemical supercapacitor applications. The exceptional strength and negatively charged surface functionalities on cellulose nanocrystals are utilised in these nanocomposites. The negatively charged surface functionalities on cellulose nanocrystals allow their simultaneous incorporation into electropolymerised, positively charged conducting polymer ...

  14. Optical properties of uniformly sized silicon nanocrystals within a single silicon oxide layer

    Energy Technology Data Exchange (ETDEWEB)

    En Naciri, A., E-mail: aotmane.en-naciri@univ-lorraine.fr [Universite de Lorraine, LCP-A2MC, Institut Jean Barriol (France); Miska, P. [Universite de Lorraine, Institut Jean Lamour CNRS UMR 7198 (France); Keita, A.-S. [Max Planck Institute for Intelligent Systems (Germany); Battie, Y. [Universite de Lorraine, LCP-A2MC, Institut Jean Barriol (France); Rinnert, H.; Vergnat, M. [Universite de Lorraine, Institut Jean Lamour CNRS UMR 7198 (France)

    2013-04-15

    Silicon nanocrystals (Si-NC) with different sizes (2-6 nm) are synthesized by evaporation. The system is composed of a single Si-NC layer that is well controlled in size. The numerical modeling of such system, without a large size distribution, is suitable to perform easily the optical calculations. The nanocrystal size and confinement effects on the optical properties are determined by photoluminescence (PL) measurements, absorption in the UV visible range, and spectroscopic ellipsometry (SE). The optical constants and the bandgap energies are then extracted and analyzed. The dependence of the optical responses with the decrease of the size of the Si-NC occurs not only with a drastic reduction of the amplitudes of dielectric function but also by a significant expansion of the optical gap. This study supports the idea of a presence of a critical size of Si-NC for which the confinement effect becomes weak. The evolution of those bandgap energies are discussed in comparison with values reported in literature.

  15. Determination of silicon and aluminum in silicon carbide nanocrystals by high-resolution continuum source graphite furnace atomic absorption spectrometry.

    Science.gov (United States)

    Dravecz, Gabriella; Bencs, László; Beke, Dávid; Gali, Adam

    2016-01-15

    The determination of Al contaminant and the main component Si in silicon carbide (SiC) nanocrystals with the size-distribution of 1-8nm dispersed in an aqueous solution was developed using high-resolution continuum source graphite furnace atomic absorption spectrometry (HR-CS-GFAAS). The vaporization/atomization processes were investigated in a transversally heated graphite atomizer by evaporating solution samples of Al and Si preserved in various media (HCl, HNO3). For Si, the best results were obtained by applying a mixture of 5µg Pd plus 5µg Mg, whereas for Al, 10µg Mg (each as nitrate solution) was dispensed with the samples, but the results obtained without modifier were found to be better. This way a maximum pyrolysis temperature of 1200°C for Si and 1300°C for Al could be used, and the optimum (compromise) atomization temperature was 2400°C for both analytes. The Si and Al contents of different sized SiC nanocrystals, dispersed in aqueous solutions, were determined against aqueous (external) calibration standards. The correlation coefficients (R values) of the calibrations were found to be 0.9963 for Si and 0.9991 for Al. The upper limit of the linear calibration range was 2mg/l Si and 0.25mg/l Al. The limit of detection was 3µg/l for Si and 0.5µg/l for Al. The characteristic mass (m0) was calculated to be 389pg Si and 6.4pg Al. The Si and Al content in the solution samples were found to be in the range of 1.0-1.7mg/l and 0.1-0.25mg/l, respectively. Copyright © 2015 Elsevier B.V. All rights reserved.

  16. Optical characterization of nanocrystals in silicon rich oxide superlattices and porous silicon

    International Nuclear Information System (INIS)

    Agocs, E.; Petrik, P.; Milita, S.; Vanzetti, L.; Gardelis, S.; Nassiopoulou, A.G.; Pucker, G.; Balboni, R.; Fried, M.

    2011-01-01

    We propose to analyze ellipsometry data by using effective medium approximation (EMA) models. Thanks to EMA, having nanocrystalline reference dielectric functions and generalized critical point (GCP) model the physical parameters of two series of samples containing silicon nanocrystals, i.e. silicon rich oxide (SRO) superlattices and porous silicon layers (PSL), have been determined. The superlattices, consisting of ten SRO/SiO 2 layer pairs, have been prepared using plasma enhanced chemical vapor deposition. The porous silicon layers have been prepared using short monopulses of anodization current in the transition regime between porous silicon formation and electropolishing, in a mixture of hydrofluoric acid and ethanol. The optical modeling of both structures is similar. The effective dielectric function of the layer is calculated by EMA using nanocrystalline components (nc-Si and GCP) in a dielectric matrix (SRO) or voids (PSL). We discuss the two major problems occurring when modeling such structures: (1) the modeling of the vertically non-uniform layer structures (including the interface properties like nanoroughness at the layer boundaries) and (2) the parameterization of the dielectric function of nanocrystals. We used several techniques to reduce the large number of fit parameters of the GCP models. The obtained results are in good agreement with those obtained by X-ray diffraction and electron microscopy. We investigated the correlation of the broadening parameter and characteristic EMA components with the nanocrystal size and the sample preparation conditions, such as the annealing temperatures of the SRO superlattices and the anodization current density of the porous silicon samples. We found that the broadening parameter is a sensitive measure of the nanocrystallinity of the samples, even in cases, where the nanocrystals are too small to be visible for X-ray scattering. Major processes like sintering, phase separation, and intermixing have been

  17. Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Banerjee, W.; Maikap, S. [Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan 333, Taiwan (China); Tien, T.-C. [Material Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, Taiwan (China); Li, W.-C.; Yang, J.-R. [Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan (China)

    2011-10-01

    The impact of iridium-oxide (IrO{sub x}) nano layer thickness on the tunneling oxide and memory performance of IrO{sub x} metal nanocrystals in an n-Si/SiO{sub 2}/Al{sub 2}O{sub 3}/IrO{sub x}/Al{sub 2}O{sub 3}/IrO{sub x} structure has been investigated. A thinner (1.5 nm) IrO{sub x} nano layer has shown better memory performance than that of a thicker one (2.5 nm). Core-shell IrO{sub x} nanocrystals with a small average diameter of 2.4 nm and a high density of {approx}2 x 10{sup 12}/cm{sup 2} have been observed by scanning transmission electron microscopy. The IrO{sub x} nanocrystals are confirmed by x-ray photoelectron spectroscopy. A large memory window of 3.0 V at a sweeping gate voltage of {+-}5 V and 7.2 V at a sweeping gate voltage of {+-} 8 V has been observed for the 1.5 nm-thick IrO{sub x} nano layer memory capacitors with a small equivalent oxide thickness of 8 nm. The electrons and holes are trapped in the core and annular regions of the IrO{sub x} nanocrystals, respectively, which is explained by Gibbs free energy. High electron and hole-trapping densities are found to be 1.5 x 10{sup 13}/cm{sup 2} and 2 x 10{sup 13}/cm{sup 2}, respectively, due to the small size and high-density of IrO{sub x} nanocrystals. Excellent program/erase endurance of >10{sup 6} cycles and good retention of 10{sup 4} s with a good memory window of >1.2 V under a small operation voltage of {+-} 5 V are obtained. A large memory size of >10 Tbit/sq. in. can be designed by using the IrO{sub x} nanocrystals. This study is not only important for the IrO{sub x} nanocrystal charge-trapping memory investigation but it will also help to design future metal nanocrystal flash memory.

  18. Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals

    International Nuclear Information System (INIS)

    Banerjee, W.; Maikap, S.; Tien, T.-C.; Li, W.-C.; Yang, J.-R.

    2011-01-01

    The impact of iridium-oxide (IrO x ) nano layer thickness on the tunneling oxide and memory performance of IrO x metal nanocrystals in an n-Si/SiO 2 /Al 2 O 3 /IrO x /Al 2 O 3 /IrO x structure has been investigated. A thinner (1.5 nm) IrO x nano layer has shown better memory performance than that of a thicker one (2.5 nm). Core-shell IrO x nanocrystals with a small average diameter of 2.4 nm and a high density of ∼2 x 10 12 /cm 2 have been observed by scanning transmission electron microscopy. The IrO x nanocrystals are confirmed by x-ray photoelectron spectroscopy. A large memory window of 3.0 V at a sweeping gate voltage of ±5 V and 7.2 V at a sweeping gate voltage of ± 8 V has been observed for the 1.5 nm-thick IrO x nano layer memory capacitors with a small equivalent oxide thickness of 8 nm. The electrons and holes are trapped in the core and annular regions of the IrO x nanocrystals, respectively, which is explained by Gibbs free energy. High electron and hole-trapping densities are found to be 1.5 x 10 13 /cm 2 and 2 x 10 13 /cm 2 , respectively, due to the small size and high-density of IrO x nanocrystals. Excellent program/erase endurance of >10 6 cycles and good retention of 10 4 s with a good memory window of >1.2 V under a small operation voltage of ± 5 V are obtained. A large memory size of >10 Tbit/sq. in. can be designed by using the IrO x nanocrystals. This study is not only important for the IrO x nanocrystal charge-trapping memory investigation but it will also help to design future metal nanocrystal flash memory.

  19. Characterization of Silicon Nanocrystal Surfaces by Multidimensional Solid-State NMR Spectroscopy

    International Nuclear Information System (INIS)

    Hanrahan, Michael P.; Fought, Ellie L.; Windus, Theresa L.; Wheeler, Lance M.; Anderson, Nicholas C.

    2017-01-01

    The chemical and photophysical properties of silicon nanocrystals (Si NCs) are strongly dependent on the chemical composition and structure of their surfaces. Here we use fast magic angle spinning (MAS) and proton detection to enable the rapid acquisition of dipolar and scalar 2D 1 H– 29 Si heteronuclear correlation (HETCOR) solid-state NMR spectra and reveal a molecular picture of hydride-terminated and alkyl-functionalized surfaces of Si NCs produced in a nonthermal plasma. 2D 1 H– 29 Si HETCOR and dipolar 2D 1 H– 1 H multiple-quantum correlation spectra illustrate that resonances from surface mono-, di-, and trihydride groups cannot be resolved, contrary to previous literature assignments. Instead the 2D NMR spectra illustrate that there is large distribution of 1 H and 29 Si chemical shifts for the surface hydride species in both the as-synthesized and functionalized Si NCs. However, proton-detected 1 H– 29 Si refocused INEPT experiments can be used to unambiguously differentiate NMR signals from the different surface hydrides. Varying the 29 Si evolution time in refocused INEPT experiments and fitting the oscillation of the NMR signals allows for the relative populations of the different surface hydrides to be estimated. This analysis confirms that monohydride species are the predominant surface species on the as-synthesized Si NCs. A reduction in the populations of the di- and trihydrides is observed upon functionalization with alkyl groups, consistent with our previous hypothesis that the trihydride, or silyl (*SiH 3 ), group is primarily responsible for initiating surface functionalization reactions. Density functional theory (DFT) calculations were used to obtain quantum chemical structural models of the Si NC surface and reproduce the observed 1 H and 29 Si chemical shifts. Furthermore, the approaches outlined here will be useful to obtain a more detailed picture of surface structures for Si NCs and other hydride-passivated nanomaterials.

  20. Synthesis of optimized indium phosphide/zinc sulfide core/shell nanocrystals and titanium dioxide nanotubes for quantum dot sensitized solar cells

    Science.gov (United States)

    Lee, Seungyong

    Synthesis of InP/ZnS core/shell nanocrystals and TiO 2 nanotubes and the optimization study to couple them together were explored for quantum dot sensitized solar cells. Its intrinsic nontoxicity makes the direct band gap InP/ZnS core/shell be one of the most promising semiconductor nanocrystals for optoelectric applications, with the advantage of tuning the optical absorption range in the desired solar spectrum region. Highly luminescent and monodisperse InP/ZnS nanocrystals were synthesized in a non-coordinating solvent. By varying the synthesis scheme, different size InP/ZnS nanocrystals with emission peaks ranging from 520 nm to 620 nm were grown. For the purpose of ensuring air stability, a ZnS shell was grown. The ZnS shell improves the chemical stability in terms of oxidation prevention. Transmission electron microscopy (TEM) image shows that the nanocrystals are highly crystalline and monodisperse. Free-standing TiO2 nanotubes were produced by an anodization method using ammonium fluoride. The free-standing nanotubes were formed under the condition that the chemical dissolution speed associated with fluoride concentration was faster than the speed of Ti oxidation. Highly ordered free-standing anatase form TiO2 nanotubes, which are transformed by annealing at the optimized temperature, are expected to be ideal for coupling with the prepared InP/ZnS nanocrystals. Electrophoretic deposition was carried out to couple the InP/ZnS nanocrystals with the TiO2 nanotubes. Under the adjusted applied voltage condition, the current during the electrophoretic deposition decreased continuously with time. The amount of the deposited nanocrystals was estimated by calculation and the evenly deposited nanocrystals on the TiO2 nanotubes were observed by TEM.

  1. Doping in silicon nanocrystals: An ab initio study of the structural, electronic and optical properties

    International Nuclear Information System (INIS)

    Iori, Federico; Degoli, Elena; Luppi, Eleonora; Magri, Rita; Marri, Ivan; Cantele, G.; Ninno, D.; Trani, F.; Ossicini, Stefano

    2006-01-01

    There are experimental evidences that doping control at the nanoscale can significantly modify the optical properties with respect to the pure systems. This is the case of silicon nanocrystals (Si-nc), for which it has been shown that the photoluminescence (PL) peak can be tuned also below the bulk Si band gap by properly controlling the impurities, for example by boron (B) and phosphorus (P) codoping. In this work, we report on an ab initio study of impurity states in Si-nc. We consider B and P substitutional impurities for Si-nc with a diameter up to 2.2 nm. Formation energies (FEs), electronic, optical and structural properties have been determined as a function of the cluster dimension. For both B-doped and P-doped Si-nc the FE increases on decreasing the dimension, showing that the substitutional doping gets progressively more difficult for the smaller nanocrystals. Moreover, subsurface impurity positions result to be the most stable ones. The codoping reduces the FE strongly favoring this process with respect to the simple n-doping or p-doping. Such an effect can be attributed to charge compensation between the donor and the acceptor atoms. Moreover, smaller structural deformations, with respect to n-doped and p-doped cases, localized only around the impurity sites are observed. The band gap and the optical threshold are largely reduced with respect to the undoped Si-nc showing the possibility of an impurity-based engineering of the Si-nc PL properties

  2. A novel type heterojunction photodiodes formed junctions of Au/LiZnSnO and LiZnSnO/p-Si in series

    Energy Technology Data Exchange (ETDEWEB)

    Aydin, H. [Department of Metallurgical and Materials Science, Faculty of Engineering, Tunceli University, Tunceli (Turkey); Tataroğlu, A. [Department of Physics, Faculty of Science, Gazi University, Ankara (Turkey); Al-Ghamdi, Ahmed A. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); Yakuphanoglu, F., E-mail: fyhanoglu@firat.edu.tr [Department of Metallurgical and Materials Science, Faculty of Engineering, Tunceli University, Tunceli (Turkey); Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah (Saudi Arabia); El-Tantawy, Farid [Department of Physics, Faculty of Science, Suez Canal University, Ismailia (Egypt); Farooq, W.A. [Physics and Astronomy Department, College of Science, King Saud University, Riyadh (Saudi Arabia)

    2015-03-15

    Highlights: • Lithium–zinc–tin–oxide thin films were prepared by sol gel method. • The Au/LiZnSnO/p-Si/Al photodiodes were fabricated using a LZTO layer grown on p-Si. • The photodiodes with Li-doped ZTO interfacial layer exhibited a better device performance. - Abstract: Lithium–zinc–tin–oxide thin films were prepared by sol gel method. The structural and optical properties of the films were investigated. The optical band gaps of the LiZnSnO films were found to be 3.78 eV for 0 at.% Li, 3.77 eV for 1 at.% Li, 3.87 eV for 3 at.% Li and 3.85 eV for 5 at.% Li, respectively. Au/LiZnSnO/p-Si/Al photodiodes were fabricated using a lithium–zinc–tin–oxide (LZTO, Li–Zn–Sn–O) layer grown on p-Si semiconductor. The electrical characteristics of the photodiodes were analyzed by current–voltage, capacitance–voltage and conductance–voltage measurements. The reverse current of the diodes increases with both the increasing illumination intensity and Li content. It was found that the Li-doped ZTO photodiodes exhibited a better device performance than those with an undoped ZTO.

  3. Chemical insight into the origin of red and blue photoluminescence arising from freestanding silicon nanocrystals.

    Science.gov (United States)

    Dasog, Mita; Yang, Zhenyu; Regli, Sarah; Atkins, Tonya M; Faramus, Angelique; Singh, Mani P; Muthuswamy, Elayaraja; Kauzlarich, Susan M; Tilley, Richard D; Veinot, Jonathan G C

    2013-03-26

    Silicon nanocrystals (Si NCs) are attractive functional materials. They are compatible with standard electronics and communications platforms and are biocompatible. Numerous methods have been developed to realize size-controlled Si NC synthesis. While these procedures produce Si NCs that appear identical, their optical responses can differ dramatically. Si NCs prepared using high-temperature methods routinely exhibit photoluminescence agreeing with the effective mass approximation (EMA), while those prepared via solution methods exhibit blue emission that is somewhat independent of particle size. Despite many proposals, a definitive explanation for this difference has been elusive for no less than a decade. This apparent dichotomy brings into question our understanding of Si NC properties and potentially limits the scope of their application. The present contribution takes a substantial step forward toward identifying the origin of the blue emission that is not expected based upon EMA predictions. It describes a detailed comparison of Si NCs obtained from three of the most widely cited procedures as well as the conversion of red-emitting Si NCs to blue emitters upon exposure to nitrogen-containing reagents. Analysis of the evidence is consistent with the hypothesis that the presence of trace nitrogen and oxygen even at the parts per million level in Si NCs gives rise to the blue emission.

  4. Glass forming ability and mechanical properties of the NiZrTiSi amorphous alloys modified with Al, Cu and Nb additions

    International Nuclear Information System (INIS)

    Czeppe, Tomasz; Ochin, Patrick; Sypien, Anna

    2007-01-01

    The composition of the amorphous alloy Ni 59 Zr 20 Ti 16 Si 5 was modified with 2-9 at.% additions of Cu, Al and Nb. The ribbons and the bars 2.7 mm in diameter were prepared by melt spinning and injection casting from the alloys of the compositions: Ni 56 Zr 18 Ti 16 Si 5 Al 3 Cu 2 , Ni 56 Zr 18 Ti 13 Al 6 Si 5 Cu 2 , Ni 56 Zr 16 Ti 12 Nb 9 Al 3 Cu 2 Si 2 and Ni 56 Zr 16 Ti 12 Nb 6 Al 6 Cu 2 Si 2 . All ribbons were amorphous up to the resolution of the X-ray diffraction and conventional transmission electron microscopy, however rods were partially crystalline. Increase of Al content lowered and Nb content slightly increased crystallization start temperature T x and glass transition temperature T g . The influence of composition changes on the overcooled liquid range ΔT was more complicated. The increase of Nb and decrease of Ti and Zr content led to the remarkable increase of the liquidus temperature T l . As a result GFA calculated as T g /T l was lowered to the values about 0.63 for 6 and 9 at.% Nb addition. The activation energies for primary crystallization in alloy with 6 at.% Al and 6 at.% of Nb, were determined. The changes of tensile test strength and microhardness with Al and Nb additions showed hardening effect caused by Nb additions and increase in fracture strength with increasing Al content

  5. Evidence of localized amorphous silicon clustering from Raman depth-probing of silicon nanocrystals in fused silica

    International Nuclear Information System (INIS)

    Barba, D; Martin, F; Ross, G G

    2008-01-01

    Silicon nanocrystals (Si-nc) and amorphous silicon (α-Si) produced by silicon implantation in fused silica have been studied by micro-Raman spectroscopy. Information regarding the Raman signature of the α-Si phonon excitation was extracted from Raman depth-probing measurements using the phenomenological phonon confinement model. The spectral deconvolution of the Raman measurements recorded at different laser focusing depths takes into account both the Si-nc size variation and the Si-nc spatial distribution within the sample. The phonon peak associated with α-Si around 470 cm -1 is greatest for in-sample laser focusing, indicating that the formation of amorphous silicon is more important in the region containing a high concentration of silicon excess, where large Si-nc are located. As also observed for Si-nc systems prepared by SiO x layer deposition, this result demonstrates the presence of α-Si in high excess Si implanted Si-nc systems

  6. Shaping metal nanocrystals through epitaxial seeded growth

    Energy Technology Data Exchange (ETDEWEB)

    Habas, Susan E.; Lee, Hyunjoo; Radmilovic, Velimir; Somorjai,Gabor A.; Yang, Peidong

    2008-02-17

    Morphological control of nanocrystals has becomeincreasingly important, as many of their physical and chemical propertiesare highly shape-dependent. Nanocrystal shape control for both single andmultiple material systems, however, remains fairly empirical andchallenging. New methods need to be explored for the rational syntheticdesign of heterostructures with controlled morphology. Overgrowth of adifferent material on well-faceted seeds, for example, allows for the useof the defined seed morphology to control nucleation and growth of thesecondary structure. Here, we have used highly faceted cubic Pt seeds todirect the epitaxial overgrowth of a secondary metal. We demonstrate thisconcept with lattice matched Pd to produce conformal shape-controlledcore-shell particles, and then extend it to lattice mismatched Au to giveanisotropic growth. Seeding with faceted nanocrystals may havesignificant potential towards the development of shape-controlledheterostructures with defined interfaces.

  7. The structure and morphology of semiconductor nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Kadavanich, Andreas V. [Univ. of California, Berkeley, CA (United States). Dept. of Chemistry

    1997-11-01

    Colloidal semiconductor nanocrystals were studied using High Resolution Transmission Electron Microscopy (HRTEM). Organically capped nanocrystals were found to have faceted shapes consistent with Wulff polyhedra after the effects of capping ligands on surface energies were taken into account. The basic shape thus derived for wurtzite (WZ) structure CdSe nanocrystals capped by tri-octyl phosphine oxide (TOPO) was a truncated hexagonal prism, elongated alone the <001> axis with (100) and (002) facets. This structure has C{sub 3v} point group symmetry. The main defect in this structure is a stacking fault (a single layer of zinc blende type stacking), which does not significantly affect the shape (does not alter the point group).

  8. Developing New Nanoprobes from Semiconductor Nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Aihua [Univ. of California, Berkeley, CA (United States)

    2006-01-01

    In recent years, semiconductor nanocrystal quantum dots havegarnered the spotlight as an important new class of biological labelingtool. Withoptical properties superior to conventional organicfluorophores from many aspects, such as high photostability andmultiplexing capability, quantum dots have been applied in a variety ofadvanced imaging applications. This dissertation research goes along withlarge amount of research efforts in this field, while focusing on thedesign and development of new nanoprobes from semiconductor nanocrystalsthat are aimed for useful imaging or sensing applications not possiblewith quantum dots alone. Specifically speaking, two strategies have beenapplied. In one, we have taken advantage of the increasing capability ofmanipulating the shape of semiconductor nanocrystals by developingsemiconductor quantum rods as fluorescent biological labels. In theother, we have assembled quantum dots and gold nanocrystals into discretenanostructures using DNA. The background information and synthesis,surface manipulation, property characterization and applications of thesenew nanoprobes in a few biological experiments are detailed in thedissertation.

  9. Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure.

    Science.gov (United States)

    Niu, Gang; Capellini, Giovanni; Hatami, Fariba; Di Bartolomeo, Antonio; Niermann, Tore; Hussein, Emad Hameed; Schubert, Markus Andreas; Krause, Hans-Michael; Zaumseil, Peter; Skibitzki, Oliver; Lupina, Grzegorz; Masselink, William Ted; Lehmann, Michael; Xie, Ya-Hong; Schroeder, Thomas

    2016-10-12

    The epitaxial integration of highly heterogeneous material systems with silicon (Si) is a central topic in (opto-)electronics owing to device applications. InP could open new avenues for the realization of novel devices such as high-mobility transistors in next-generation CMOS or efficient lasers in Si photonics circuitry. However, the InP/Si heteroepitaxy is highly challenging due to the lattice (∼8%), thermal expansion mismatch (∼84%), and the different lattice symmetries. Here, we demonstrate the growth of InP nanocrystals showing high structural quality and excellent optoelectronic properties on Si. Our CMOS-compatible innovative approach exploits the selective epitaxy of InP nanocrystals on Si nanometric seeds obtained by the opening of lattice-arranged Si nanotips embedded in a SiO 2 matrix. A graphene/InP/Si-tip heterostructure was realized on obtained materials, revealing rectifying behavior and promising photodetection. This work presents a significant advance toward the monolithic integration of graphene/III-V based hybrid devices onto the mainstream Si technology platform.

  10. Binding SnO2 nanocrystals in nitrogen-doped graphene sheets as anode materials for lithium-ion batteries.

    Science.gov (United States)

    Zhou, Xiaosi; Wan, Li-Jun; Guo, Yu-Guo

    2013-04-18

    Hybrid anode materials for Li-ion batteries are fabricated by binding SnO2 nanocrystals (NCs) in nitrogen-doped reduced graphene oxide (N-RGO) sheets by means of an in situ hydrazine monohydrate vapor reduction method. The SnO2NCs in the obtained SnO2NC@N-RGO hybrid material exhibit exceptionally high specific capacity and high rate capability. Bonds formed between graphene and SnO2 nanocrystals limit the aggregation of in situ formed Sn nanoparticles, leading to a stable hybrid anode material with long cycle life. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Multi-mode interference revealed by two photon absorption in silicon rich SiO2 waveguides

    International Nuclear Information System (INIS)

    Manna, S.; Ramiro-Manzano, F.; Mancinelli, M.; Turri, F.; Pavesi, L.; Ghulinyan, M.; Pucker, G.

    2015-01-01

    Photoluminescence (PL) from Si nanocrystals (NCs) excited by two-photon absorption (TPA) has been observed in Si nanocrystal-based waveguides fabricated by plasma enhanced chemical vapor deposition. The TPA excited photoluminescence emission resembles the one-photon excited photoluminescence arising from inter-band transitions in the quantum confined Si nanocrystals. By measuring the non-linear transmission of waveguides, a large TPA coefficient of β up to 10 −8  cm/W has been measured at 1550 nm. These values of β depend on the Si NCs size and are two orders of magnitude larger than the bulk silicon value. Here, we propose to use the TPA excited visible PL emission as a tool to map the spatial intensity profile of the 1550 nm propagating optical modes in multimode waveguides. In this way, multimode interference has been revealed experimentally and confirmed through a finite element simulation

  12. Plasmonic Properties of Silicon Nanocrystals Doped with Boron and Phosphorus.

    Science.gov (United States)

    Kramer, Nicolaas J; Schramke, Katelyn S; Kortshagen, Uwe R

    2015-08-12

    Degenerately doped silicon nanocrystals are appealing plasmonic materials due to silicon's low cost and low toxicity. While surface plasmonic resonances of boron-doped and phosphorus-doped silicon nanocrystals were recently observed, there currently is poor understanding of the effect of surface conditions on their plasmonic behavior. Here, we demonstrate that phosphorus-doped silicon nanocrystals exhibit a plasmon resonance immediately after their synthesis but may lose their plasmonic response with oxidation. In contrast, boron-doped nanocrystals initially do not exhibit plasmonic response but become plasmonically active through postsynthesis oxidation or annealing. We interpret these results in terms of substitutional doping being the dominant doping mechanism for phosphorus-doped silicon nanocrystals, with oxidation-induced defects trapping free electrons. The behavior of boron-doped silicon nanocrystals is more consistent with a strong contribution of surface doping. Importantly, boron-doped silicon nanocrystals exhibit air-stable plasmonic behavior over periods of more than a year.

  13. Luminescence in colloidal Mn2+-doped semiconductor nanocrystals

    International Nuclear Information System (INIS)

    Beaulac, Remi; Archer, Paul I.; Gamelin, Daniel R.

    2008-01-01

    Recent advances in nanocrystal doping chemistries have substantially broadened the variety of photophysical properties that can be observed in colloidal Mn 2+ -doped semiconductor nanocrystals. A brief overview is provided, focusing on Mn 2+ -doped II-VI semiconductor nanocrystals prepared by direct chemical synthesis and capped with coordinating surface ligands. These Mn 2+ -doped semiconductor nanocrystals are organized into three major groups according to the location of various Mn 2+ -related excited states relative to the energy gap of the host semiconductor nanocrystals. The positioning of these excited states gives rise to three distinct relaxation scenarios following photoexcitation. A brief outlook on future research directions is provided. - Graphical abstract: Mn 2+ -doped semiconductor nanocrystals are organized into three major groups according to the location of various Mn 2+ -related excited states relative to the energy gap of the host semiconductor nanocrystals. The positioning of these excited states gives rise to three distinct relaxation scenarios following photoexcitation

  14. Cloning nanocrystal morphology with soft templates

    Science.gov (United States)

    Thapa, Dev Kumar; Pandey, Anshu

    2016-08-01

    In most template directed preparative methods, while the template decides the nanostructure morphology, the structure of the template itself is a non-general outcome of its peculiar chemistry. Here we demonstrate a template mediated synthesis that overcomes this deficiency. This synthesis involves overgrowth of silica template onto a sacrificial nanocrystal. Such templates are used to copy the morphologies of gold nanorods. After template overgrowth, gold is removed and silver is regrown in the template cavity to produce a single crystal silver nanorod. This technique allows for duplicating existing nanocrystals, while also providing a quantifiable breakdown of the structure - shape interdependence.

  15. Pastern recognition of clusters formed in 4.1(4.5)A GeV/c 22Ne(28Si) interaction with emulsion using Lobachevsky velocity space

    International Nuclear Information System (INIS)

    EI-Naghy, A.; AbdeI-Aziz, S.S.; Salah, M.M.

    2000-01-01

    The experimental data of 4.1(4.5)A GeV/c 22 Ne( 28 Si) emulsion interactions, which has been measured in the laboratory of high energy physics ( LHEP ) at Cairo University , has been utilized in this analysis. In the present paper we propose the use of Bubelev's graphical method to visualize the candidates of cluster formation in nucleus - nucleus interactions. This method is based on the Chernikov geometry formulation of relativistic kinematics in patterns in the Lobachevsky velocity space in which the motion of particles are equivalent to the Lorentz group. The analysis has shown that events which are identified as formation of clusters in 22 Ne( 28 Si) emulsion interactions are well illustrated in the Lobachevsky velocity space using the principle of likeness (closeness). The study will be extended to include other reactions and other types of particles

  16. Role of the inversion layer on the charge injection in silicon nanocrystal multilayered light emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Tondini, S. [Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, 38123 Trento (Italy); Dipartimento di Fisica, Informatica e Matematica, Università di Modena e Reggio Emilia, Via Campi 213/a, 41125 Modena (Italy); Pucker, G. [Advanced Photonics and Photovoltaics Group, Bruno Kessler Foundation, Via Sommarive 18, 38123 Trento (Italy); Pavesi, L. [Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, 38123 Trento (Italy)

    2016-09-07

    The role of the inversion layer on injection and recombination phenomena in light emitting diodes (LEDs) is here studied on a multilayer (ML) structure of silicon nanocrystals (Si-NCs) embedded in SiO{sub 2}. Two Si-NC LEDs, which are similar for the active material but different in the fabrication process, elucidate the role of the non-radiative recombination rates at the ML/substrate interface. By studying current- and capacitance-voltage characteristics as well as electroluminescence spectra and time-resolved electroluminescence under pulsed and alternating bias pumping scheme in both the devices, we are able to ascribe the different experimental results to an efficient or inefficient minority carrier (electron) supply by the p-type substrate in the metal oxide semiconductor LEDs.

  17. Resonance Raman spectra of wurtzite and zincblende CdSe nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Kelley, Anne Myers, E-mail: amkelley@ucmerced.edu [Chemistry and Chemical Biology, School of Natural Sciences, University of California, 5200 North Lake Road, Merced, CA 95343 (United States); Dai, Quanqin; Jiang, Zhong-jie; Baker, Joshua A.; Kelley, David F. [Chemistry and Chemical Biology, School of Natural Sciences, University of California, 5200 North Lake Road, Merced, CA 95343 (United States)

    2013-08-30

    Highlights: ► Very similar resonance Raman spectra of wurtzite and zincblende CdSe nanocrystals. ► First absolute resonance Raman cross-sections reported for CdSe nanocrystals. ► LO overtones suggest slightly stronger electron–phonon coupling in wurtzite form. - Abstract: Resonance Raman spectra and absolute differential Raman cross-sections have been measured for CdSe nanocrystals in both the wurtzite and zincblende crystal forms at four excitation wavelengths from 457.9 to 514.5 nm. The frequency and bandshape of the longitudinal optical (LO) phonon fundamental is essentially identical for both crystal forms at each excitation wavelength. The LO phonon overtone to fundamental intensity ratio appears to be slightly higher for the wurtzite form, which may suggest slightly stronger exciton–phonon coupling from the Fröhlich mechanism in the wurtzite form. The LO fundamental Raman cross-sections are very similar for both crystal forms at each excitation wavelength.

  18. Annealing effect and photovoltaic properties of nano-ZnS/textured p-Si heterojunction

    OpenAIRE

    Ji, Liang-Wen; Hsiao, Yu-Jen; Tang, I-Tseng; Meen, Teen-Hang; Liu, Chien-Hung; Tsai, Jenn-Kai; Wu, Tien-Chuan; Wu, Yue-Sian

    2013-01-01

    The preparation and characterization of heterojunction solar cell with ZnS nanocrystals synthesized by chemical bath deposition method were studied in this work. The ZnS nanocrystals were characterized by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). Lower reflectance spectra were found as the annealing temperature of ZnS film increased on the textured p-Si substrate. It was found that the power conversion efficiency (PCE) of the AZO/ZnS/textured p-Si h...

  19. Annealing effect and photovoltaic properties of nano-ZnS/textured p-Si heterojunction

    Science.gov (United States)

    Ji, Liang-Wen; Hsiao, Yu-Jen; Tang, I.-Tseng; Meen, Teen-Hang; Liu, Chien-Hung; Tsai, Jenn-Kai; Wu, Tien-Chuan; Wu, Yue-Sian

    2013-11-01

    The preparation and characterization of heterojunction solar cell with ZnS nanocrystals synthesized by chemical bath deposition method were studied in this work. The ZnS nanocrystals were characterized by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). Lower reflectance spectra were found as the annealing temperature of ZnS film increased on the textured p-Si substrate. It was found that the power conversion efficiency (PCE) of the AZO/ZnS/textured p-Si heterojunction solar cell with an annealing temperature of 250°C was η = 3.66%.

  20. Inhomogeneous magnetic phase in Co–Al–O spinel nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Sato, K., E-mail: sato.koichi@nims.go.jp [National Institute for Materials Science, 2-1-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Naka, T., E-mail: naka.takashi@nims.go.jp [National Institute for Materials Science, 2-1-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Nakane, T. [National Institute for Materials Science, 2-1-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Rangappa, D. [International Advanced Research Centre for Powder Metallurgy and New Materials, Balapur PO, Hyderabad 500-005 (India); Takami, S. [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Ohara, S. [Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); Adschiri, T. [WPI, Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan)

    2014-01-15

    We report on the crystallographic structure and magnetism of 5-nm Co–Al–O spinel nanocrystals synthesized under supercritical hydrothermal conditions. Structural examination using powder X-ray diffraction and chemical analysis showed the composition of the sample to be Co{sub 0.47}Al{sub 2.36}O{sub 4} rather than the stoichiometric composition of CoAl{sub 2}O{sub 4}. The site occupancy of Co on the A-site forming the diamond lattice was 0.47, which is slightly larger than the site percolation limit. Magnetization measurements showed that magnetic clusters emerged below 40 K. At temperatures below 40 K, a Griffiths-phase-like inhomogeneous state appeared in the sample in which magnetic clusters and paramagnetic spins coexisted. The dc-paramagnetic and ac-susceptibilities exhibited an anomaly below 7 K. - Highlights: • The synthesized sample had an Al-rich structure described by Co{sub 0.47}Al{sub 2.36}O{sub 4}. • The site occupancy of Co at the A-site is larger than the site percolation limit of the A-site. • The non-linearity of the magnetization appeared at T<40 K. • The paramagnetic component showed a peak at 7 K. • An inhomogeneous state is established in our Co–Al oxide nanocrystals.

  1. Flexible, Photopatterned, Colloidal CdSe Semiconductor Nanocrystal Integrated Circuits

    Science.gov (United States)

    Stinner, F. Scott

    As semiconductor manufacturing pushes towards smaller and faster transistors, a parallel goal exists to create transistors which are not nearly as small. These transistors are not intended to match the performance of traditional crystalline semiconductors; they are designed to be significantly lower in cost and manufactured using methods that can make them physically flexible for applications where form is more important than speed. One of the developing technologies for this application is semiconductor nanocrystals. We first explore methods to develop CdSe nanocrystal semiconducting "inks" into large-scale, high-speed integrated circuits. We demonstrate photopatterned transistors with mobilities of 10 cm2/Vs on Kapton substrates. We develop new methods for vertical interconnect access holes to demonstrate multi-device integrated circuits including inverting amplifiers with 7 kHz bandwidths, ring oscillators with NFC) link. The device draws its power from the NFC transmitter common on smartphones and eliminates the need for a fixed battery. This allows for the mass deployment of flexible, interactive displays on product packaging.

  2. Physical properties and microstructure performance of ultrafine nanocrystals reinforced laser 3D print microlaminates

    International Nuclear Information System (INIS)

    Li, Jianing; Xia, Chunzhi; Liu, Peng; Pan, Guanghui; Wang, Congwei

    2015-01-01

    Highlights: • Ultrafine nanocrystals, nanorods and amorphous phases were produced in such LRP microlaminates. • The amorphous/nanocrystalline interface owned a high bonding energy. • Amorphous/nanocrystalline interface may retard growth of nanocrystals in a certain extent. • Due to production of amorphous, lots of microscale ASNPs were produced. • Ultrafine nanocrystals had the high interface energy, which became the driving force of the atomic motions. - Abstract: Rapid prototyping based on laser alloying was used to produce ultrafine nanocrystals (UN) reinforced three-dimensional microlaminates. Such microlaminates were fabricated on a TA1 alloy by laser rapid prototyping (LRP) of Stellite 20–TiN–B 4 C mixed powders to produce a bottom layer; then Stellite 20–TiN–B 4 C–Sb powders were deposited on such bottom-layer in order to form an upper-layer. There is an excellent metallurgical combination between such two layer; the upper-layer shows a better wear resistance than that of the bottom layer. The Sb addition promoted lots of UN to be produced, and lots of the nanorods were also produced in such microlaminates, their growth was retarded by agglomeration of UN in a certain extent. Such UN had the high interface energy, which became the driving force of atomic motions, favoring formation of a compact fine structure

  3. New crystal structures in hexagonal CuInS2 nanocrystals

    Science.gov (United States)

    Shen, Xiao; Hernández-Pagan, Emil A.; Zhou, Wu; Puzyrev, Yevgeniy S.; Idrobo, Juan C.; MacDonald, Janet E.; Pennycook, Stephen J.; Pantelides, Sokrates T.

    2013-03-01

    CuInS2 is one of the best candidate materials for solar energy harvesting. Its nanocrystals with a hexagonal lattice structure that is different from the bulk chalcopyrite phase have been synthesized by many groups. The structure of these CuInS2 nanocrystals has been previously identified as the wurtzite structure in which the copper and indium atoms randomly occupy the cation sites. Using first-principles total energy and electronic structure calculations based on density functional theory, UV-vis absorption spectroscopy, X-ray diffraction, and atomic resolution Z-contrast images obtained in an aberration-corrected scanning transmission electron microscope, we show that CuInS2 nanocrystals do not form random wurtzite structure. Instead, the CuInS2 nanocrystals consist of several wurtzite- related crystal structures with ordered cation sublattices, some of which are reported for the first time here. This work is supported by the NSF TN-SCORE (JEM), by NSF (WZ), by ORNL's Shared Research Equipment User Program (JCI) sponsored by DOE BES, by DOE BES Materials Sciences and Engineering Division (SJP, STP), and used resources of the National Energy Research Scientific Computing Center, supported by the DOE Office of Science under Contract No. DE-AC02-05CH11231.

  4. Physical properties and microstructure performance of ultrafine nanocrystals reinforced laser 3D print microlaminates

    Energy Technology Data Exchange (ETDEWEB)

    Li, Jianing, E-mail: jn2369@163.com [School of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101 (China); Beijing Aeronautical Manufacturing Technology Research Institute, Beijing 100024 (China); Xia, Chunzhi [Provincial Laboratory of Advanced Welding Technology, Jiangsu University of Science and Technology, Zhenjiang 212003 (China); Liu, Peng; Pan, Guanghui; Wang, Congwei [School of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101 (China)

    2015-10-05

    Highlights: • Ultrafine nanocrystals, nanorods and amorphous phases were produced in such LRP microlaminates. • The amorphous/nanocrystalline interface owned a high bonding energy. • Amorphous/nanocrystalline interface may retard growth of nanocrystals in a certain extent. • Due to production of amorphous, lots of microscale ASNPs were produced. • Ultrafine nanocrystals had the high interface energy, which became the driving force of the atomic motions. - Abstract: Rapid prototyping based on laser alloying was used to produce ultrafine nanocrystals (UN) reinforced three-dimensional microlaminates. Such microlaminates were fabricated on a TA1 alloy by laser rapid prototyping (LRP) of Stellite 20–TiN–B{sub 4}C mixed powders to produce a bottom layer; then Stellite 20–TiN–B{sub 4}C–Sb powders were deposited on such bottom-layer in order to form an upper-layer. There is an excellent metallurgical combination between such two layer; the upper-layer shows a better wear resistance than that of the bottom layer. The Sb addition promoted lots of UN to be produced, and lots of the nanorods were also produced in such microlaminates, their growth was retarded by agglomeration of UN in a certain extent. Such UN had the high interface energy, which became the driving force of atomic motions, favoring formation of a compact fine structure.

  5. Shape and phase control of CdS nanocrystals using cationic surfactant in noninjection synthesis

    Directory of Open Access Journals (Sweden)

    Zou Yu

    2011-01-01

    Full Text Available Abstract Monodispersed CdS nanocrystals with controllable shape and phase have been successfully synthesized in this study by adding cationic surfactant in noninjection synthesis system. With the increase of the amount of cetyltrimethylammonium chloride (CTAC added, the shape of the CdS nanocrystals changed from spherical to multi-armed, and the phase changed from zinc-blende to wurtzite. It was found that halide ion Cl- plays a key role in the transformation, and other halide ions such as Br- can also induce similar transformation. We proposed that the strong binding between Cd2+ and halide ions reduced the reactivity of the precursors, decreased the nuclei formed in the nucleation stage, and led to the high concentration of precursor in the growth stage, resulting in the increase of size and phase transformation of CdS nanocrystals. In addition, it was found that the multi-armed CdS nanocrystals lost quantum confinement effect because of the increase of the size with the increase of the concentration of CTAC.

  6. Generalized syntheses of nanocrystal-graphene hybrids in high-boiling-point organic solvents.

    Science.gov (United States)

    Pang, Danny Wei-Ping; Yuan, Fang-Wei; Chang, Yan-Cheng; Li, Guo-An; Tuan, Hsing-Yu

    2012-08-07

    Nanocrystal-graphene have been proposed as a new kind of promising hybrid for a wide range of application areas including catalysts, electronics, sensors, biomedicine, and energy storage, etc. Although a variety of methods have been developed for the preparation of hybrids, a facile and general synthetic approach is still highly required. In this study, nanocrystal-graphene hybrids were successfully synthesized in high-boiling-point organic solvents. Graphene oxide (GO) nanosheets were modified by oleylamine (OLA) to form a OLA-GO complex in order to be readily incorporated into hydrophobic synthesis. A rich library of highly crystalline nanocrystals, with types including noble metal, metal oxide, magnetic material and semiconductor were successfully grown on chemically converted graphene (CCG), which is simultaneously reduced from GO during the synthesis. High boiling-point solvents afford sufficient thermal energy to assure the high-quality crystalline nature of NCs, therefore the post-annealing process is obviated. Controlled experiments revealed that OLA-GO triggers heterogeneous nucleation and serves as excellent nuclei anchorage media. The protocol developed here brings one step closer to achieve "unity in diversity" on the preparation of nanocrystal-graphene hybrids.

  7. Hybridization of Single Nanocrystals of Cs4PbBr6 and CsPbBr3.

    Science.gov (United States)

    Weerd, Chris de; Lin, Junhao; Gomez, Leyre; Fujiwara, Yasufumi; Suenaga, Kazutomo; Gregorkiewicz, Tom

    2017-09-07

    Nanocrystals of all-inorganic cesium lead halide perovskites (CsPbX 3 , X = Cl, Br, I) feature high absorption and efficient narrow-band emission which renders them promising for future generation of photovoltaic and optoelectronic devices. Colloidal ensembles of these nanocrystals can be conveniently prepared by chemical synthesis. However, in the case of CsPbBr 3 , its synthesis can also yield nanocrystals of Cs 4 PbBr 6 and the properties of the two are easily confused. Here, we investigate in detail the optical characteristics of simultaneously synthesized green-emitting CsPbBr 3 and insulating Cs 4 PbBr 6 nanocrystals. We demonstrate that, in this case, the two materials inevitably hybridize, forming nanoparticles with a spherical shape. The actual amount of these Cs 4 PbBr 6 nanocrystals and nanohybrids increases for synthesis at lower temperatures, i.e., the condition typically used for the development of perovskite CsPbBr 3 nanocrystals with smaller sizes. We use state-of-the-art electron energy loss spectroscopy to characterize nanoparticles at the single object level. This method allows distinguishing between optical characteristics of a pure Cs 4 PbBr 6 and CsPbBr 3 nanocrystal and their nanohybrid. In this way, we resolve some of the recent misconceptions concerning possible visible absorption and emission of Cs 4 PbBr 6 . Our method provides detailed structural characterization, and combined with modeling, we conclusively identify the nanospheres as CsPbBr 3 /Cs 4 PbBr 6 hybrids. We show that the two phases are independent of each other's presence and merge symbiotically. Herein, the optical characteristics of the parent materials are preserved, allowing for an increased absorption in the UV due to Cs 4 PbBr 6 , accompanied by the distinctive efficient green emission resulting from CsPbBr 3 .

  8. High-Density Stacked Ru Nanocrystals for Nonvolatile Memory Application

    International Nuclear Information System (INIS)

    Ping, Mao; Zhi-Gang, Zhang; Li-Yang, Pan; Jun, Xu; Pei-Yi, Chen

    2009-01-01

    Stacked ruthenium (Ru) nanocrystals (NCs) are formed by rapid thermal annealing for the whole gate stacks and embedded in memory structure, which is compatible with conventional CMOS technology. Ru NCs with high density (3 × 10 12 cm −2 ), small size (2–4 nm) and good uniformity both in aerial distribution and morphology are formed. Attributed to the higher surface trap density, a memory window of 5.2 V is obtained with stacked Ru NCs in comparison to that of 3.5 V with single-layer samples. The stacked Ru NCs device also exhibits much better retention performance because of Coulomb blockade and vertical uniformity between stacked Ru NCs

  9. Nondegenerate Four-Wave Mixing in Gold Nanocomposites Formed by Ion Implantation

    International Nuclear Information System (INIS)

    Saonov, V.P.; Zhu, J.G.; Lepeshkin, N.N.; Armstrong, R.L.; Shalaev, V.M.; Ying, Z.C.; White, C.W.; Zuhr, R.A.

    1999-01-01

    Nondegenerate four-wave mixing technique has been used to investigate the third-order nonlinear susceptibility for nanocomposite material with Au nanocrystals formed inside a SiO 2 glass matrix. High concentrations of encapsulated Au nanocrystals are formed by implantation of Au ions into fused silica glass substrates and thermal annealing. The size distribution and the depth profiles of the Au nanoparticles can be controlled by the implantation dose, energy and annealing temperatures. The high value of the third-order susceptibility - (0.26--1.3)x10 -7 esu was found in the range of the frequency detunings near the surface plasmon resonance. Two characteristic relaxation times, 0.66 ps and 5.3 ps, have been extracted from the detuning curve of the third-order susceptibility as the probe-beam frequency changes and the pump-beam frequency fixed at the plasmon resonance. The first relaxation time was attributed to electron-phonon relaxation, and the second to thermal diffusion to the host medium. The efficient nondegenerate conversion is attractive for optical processing

  10. Manipulating emission of CdSe/ZnS nanocrystals embedded in synthetic opals

    International Nuclear Information System (INIS)

    Benalloul, Paul; Vion, Celine; Barthou, Charles; Schwob, Catherine; Frigerio, Jean-Marc; MaItre, Agnes; Gruzintsev, Alex; Emelchenko, Gennadi; Masalov, Wladimir; Nga, Pham Thu

    2009-01-01

    Photonic crystals (PCs) are the object of great interest due to the possibility, for appropriate PCs, to modify and control light propagation and even to influence the emission properties of an emitter, such as its emission diagram and its life time. One of the most common approaches to prepare 3D PCs takes advantage of the spontaneous self-organisation of spherical colloidal particles. Various self-assembly techniques such as sedimentation, convective or Langmuir-Blodgett ones have been studied as they provide a low cost and relatively easy protocol to obtain artificial opals. SiO 2 opals exhibit a pseudo-band gap. Nevertheless the coupling of II-VI nanocrystal emitters in such PCs allows one to recognize and study some basic problems. Large opals have been prepared by the sedimentation method and the size of the balls has been adjusted so that the pseudo-band gap of those PCs lies in the same region as the emission band of CdSe/ZnS nanocrystals. Diagrams of radiation and the modification of the spontaneous life time of the embedded nanocrystals will be presented and discussed. Introducing well-defined defects in PCs which are necessary to guide the photons through the crystal remains a hard technological challenge. Several top-down methods have been investigated. We will present different bottom-up routes proposed by different groups to engineer planar defects into colloidal PCs.

  11. Thermal stability of iron silicide nanowires epitaxially grown on Si(110) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Zou, Zhi-Qiang, E-mail: zouzhq@shanghaitech.edu.cn [School of Physical Science and Technology, ShanghaiTech University, 100 Haike Road, Pudong, Shanghai, 201210 (China); Li, Xu; Liu, Xiao-Yong; Shi, Kai-Juan; Guo, Xin-Qiu [Analytical and Testing Center, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240 (China)

    2017-03-31

    Highlights: • The α-FeSi{sub 2} nanowires epitaxially grown on Si(110) can be stable up to 750 °C. • The stable temperature of the nanowires is much lower than that of the bulk α-FeSi{sub 2} due to their small size and high relative surface area. • With increasing annealing temperature, the α-FeSi{sub 2} nanowires undergo an Ostwald ripening process and transform into large β-FeSi{sub 2} nanorods or three-dimensional nanocrystals. • The reduction in surface energy drives the transformation from metallic α-FeSi{sub 2} phase to semiconducting β-FeSi{sub 2} phase. - Abstract: Metallic α-FeSi{sub 2} nanowires (NWs) are epitaxially grown on Si(110) at 650 °C. Their evolution as a function of annealing temperature has been studied in situ by scanning tunneling microscopy. The NWs are stable up to 750 °C, which is much lower than that of the bulk α-FeSi{sub 2}. With further increasing the annealing temperature, some NWs begin to shrink in length and transform into wider and higher semiconducting β-FeSi{sub 2} nanorods or three-dimensional (3D) islands at 925 °C. The phase transformation is driven by the reduction in surface energy. On the other hand, some α-FeSi{sub 2} NWs begin to dissolve and become thinner until disappearing. The growth of the β-FeSi{sub 2} nanorods or 3D nanocrystals follows the Ostwald ripening mechanism, i.e., the large islands grow in size at the expense of the small ones. X-ray photoelectron spectroscopy study shows that the Fe 2p peaks of β-FeSi{sub 2} nanocrystals exhibit a negative shift of 0.2 eV with respect to the α-FeSi{sub 2} NWs.

  12. Prospects of Colloidal Copper Chalcogenide Nanocrystals

    NARCIS (Netherlands)

    van der Stam, W.; Berends, A.C.; de Mello-Donega, Celso

    2016-01-01

    Over the past few years, colloidal copper chalcogenide nanocrystals (NCs) have emerged as promising alternatives to conventional Cd and Pb chalcogenide NCs. Owing to their wide size, shape, and composition tunability, Cu chalcogenide NCs hold great promise for several applications, such as

  13. Hafnium carbide nanocrystal chains for field emitters

    International Nuclear Information System (INIS)

    Tian, Song; Li, Hejun; Zhang, Yulei; Ren, Jincui; Qiang, Xinfa; Zhang, Shouyang

    2014-01-01

    A hafnium carbide (HfC) nanostructure, i.e., HfC nanocrystal chain, was synthesized by a chemical vapor deposition (CVD) method. X-ray diffractometer, field-emission scanning electron microscope, transmission electron microscope, and energy-dispersive X-ray spectrometer were employed to characterize the product. The synthesized one-dimensional (1D) nanostructures with many faceted octahedral nanocrystals possess diameters of tens of nanometers to 500 nm and lengths of a few microns. The chain-like structures possess a single crystalline structure and preferential growth direction along the [1 0 0] crystal orientation. The growth of the chains occurred through the vapor–liquid–solid process along with a negative-feedback mechanism. The field emission (FE) properties of the HfC nanocrystal chains as the cold cathode emitters were examined. The HfC nanocrystal chains display good FE properties with a low turn-on field of about 3.9 V μm −1 and a high field enhancement factor of 2157, implying potential applications in vacuum microelectronics.

  14. Atomic force microscopy characterization of cellulose nanocrystals

    Science.gov (United States)

    Roya R. Lahiji; Xin Xu; Ronald Reifenberger; Arvind Raman; Alan Rudie; Robert J. Moon

    2010-01-01

    Cellulose nanocrystals (CNCs) are gaining interest as a “green” nanomaterial with superior mechanical and chemical properties for high-performance nanocomposite materials; however, there is a lack of accurate material property characterization of individual CNCs. Here, a detailed study of the topography, elastic and adhesive properties of individual wood-derived CNCs...

  15. Biocompatibility of bio based calcium carbonate nanocrystals ...

    African Journals Online (AJOL)

    Background: Currently, there has been extensive research interest for inorganic nanocrystals such as calcium phosphate, iron oxide, silicone, carbon nanotube and layered double hydroxide as a drug delivery system especially in cancer therapy. However, toxicological screening of such particles is paramount importance ...

  16. Solvothermal synthesis and characterization of CZTS nanocrystals

    Science.gov (United States)

    Dumasiya, Ajay; Shah, N. M.

    2017-05-01

    Cu2ZnSnS4 (CZTS) is a promising thin film absorber material for low cost solar cell applications. CZTS nanoparticle ink synthesized using solvothermal route is an attractive option to deposit absorber layer using screen printing or spin coating method in CZTS thin film solar cell. In this study we have synthesized CZTS nanocrystals using solvothermal method from aqueous solution of Copper nitrate [Cu(NO3)2], Zinc nitrate [Zn(NO3)2], tin chloride [SnCl4] and thiourea with varying concentration of Cu(NO3)2 (viz 0.82 mmol,1.4 mmol, 1.7 mmol) keeping concentrations of rest of solutions constant. As synthesized CZTS nanocrystals are characterized using Energy Dispersive Analysis of X-rays (EDAX) to verify stoichiometry of elements. Analysis of EDAX data suggests that CZTS nanocrystals having Copper nitrate [Cu (NO3)2] concentration of 1.4 m mole is near stoichiometric. X-ray diffraction analysis study of CZTS nanocrystals having Copper nitrate [Cu (NO3)2] concentration of 1.4 m mole reveals the preferred orientation of the grains in (112), (220) and (312) direction confirming Kesterite structure of CZTS.

  17. Thick-shell nanocrystal quantum dots

    Science.gov (United States)

    Hollingsworth, Jennifer A [Los Alamos, NM; Chen, Yongfen [Eugene, OR; Klimov, Victor I [Los Alamos, NM; Htoon, Han [Los Alamos, NM; Vela, Javier [Los Alamos, NM

    2011-05-03

    Colloidal nanocrystal quantum dots comprising an inner core having an average diameter of at least 1.5 nm and an outer shell, where said outer shell comprises multiple monolayers, wherein at least 30% of the quantum dots have an on-time fraction of 0.80 or greater under continuous excitation conditions for a period of time of at least 10 minutes.

  18. Biodegradation behaviors of cellulose nanocrystals -PVA nanocomposites

    Directory of Open Access Journals (Sweden)

    Mahdi Rohani

    2014-11-01

    Full Text Available In this research, biodegradation behaviors of cellulose nanocrystals-poly vinyl alcohol nanocomposites were investigated. Nanocomposite films with different filler loading levels (3, 6, 9 and 12% by wt were developed by solvent casting method. The effect of cellulose nanocrystals on the biodegradation behaviors of nanocomposite films was studied. Water absorption and water solubility tests were performed by immersing specimens into distilled water. The characteristic parameter of diffusion coefficient and maximum moisture content were determined from the obtained water absorption curves. The water absorption behavior of the nanocomposites was found to follow a Fickian behavior. The maximum water absorption and diffusion coefficients were decreased by increasing the cellulose nanocrystals contents, however the water solubility decrease. The biodegradability of the films was investigated by immersing specimens into cellulase enzymatic solution as well as by burial in soil. The results showed that adding cellulose nanocrystals increase the weight loss of specimens in enzymatic solution but decrease it in soil media. The limited biodegradability of specimens in soil media attributed to development of strong interactions with solid substrates that inhibit the accessibility of functional groups. Specimens with the low degree of hydrolysis underwent extensive biodegradation in both enzymatic and soil media, whilst specimens with the high degree of hydrolysis showed recalcitrance to biodegradation under those conditions.

  19. Mechanistic Study of Monodisperse Iron Oxide Nanocrystals ...

    African Journals Online (AJOL)

    To gain better insight into the formation of iron oxide nanocrystals from the solution phase thermal decomposition of iron (III) oleate complex, different reaction conditions including time, heating ramp, as well as concentrations of iron oleate precursor and oleic acid ligand were systematically varied and the resulting ...

  20. Silicon nanocrystal films for electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Lechner, Robert W.

    2009-02-06

    Whether nanoparticles of silicon are really suited for such applications, whether layers fabricated from this exhibit semiconducting properties, whether they can be doped, and whether for instance via the doping the conductivity can be tuned, was studied in the present thesis. Starting material for this were on the one hand spherical silicon nanocrystals with a sharp size distribution and mean diameters in the range from 4-50 nm. Furthermore silicon particle were available, which are with 50-500 nm distinctly larger and exhibit a broad distribution of the mean size and a polycrystalline fine structure with strongly bifurcated external morphology. The small conductivities and tje low mobility values of the charge carriers in the layers of silicon nanocrystals suggest to apply suited thermal after-treatment procedures. So was found that the aluminium-induced layer exchange (ALILE) also can be transferred to the porous layers of nanocrystals. With the deuteron passivation a method was available to change the charge-carrier concentration in the polycrystalline layers. Additionally to ALILE laser crystallization as alternative after-treatment procedure of the nanocrystal layers was studied.

  1. Biomimetic synthesis of noble metal nanocrystals

    Science.gov (United States)

    Chiu, Chin-Yi

    At the nanometer scale, the physical and chemical properties of materials heavily depend on their sizes and shapes. This fact has triggered considerable efforts in developing controllable nanomaterial synthesis. The controlled growth of colloidal nanocrystal is a kinetic process, in which high-energy facets grow faster and then vanish, leading to a nanocrystal enclosed by low-energy facets. Identifying a surfactant that can selectively bind to a particular crystal facet and thus lower its surface energy, is critical and challenging in shape controlled synthesis of nanocrystals. Biomolecules exhibiting exquisite molecular recognition properties can be exploited to precisely engineer nanostructured materials. In the first part of my thesis, we employed the phage display technique to select a specific multifunctional peptide sequence which can bind on Pd surface and mediate Pd crystal nucleation and growth, achieving size controlled synthesis of Pd nanocrystals in aqueous solution. We further demonstrated a rational biomimetic approach to the predictable synthesis of nanocrystals enclosed by a particular facet in the case of Pt. Specifically, Pt {100} and Pt {111} facet-specific peptides were identified and used to synthesize Pt nanocubes and Pt nano-tetrahedrons, respectively. The mechanistic studies of Pt {111} facet-specific peptide had led us to study the facet-selective adsorption of aromatic molecules on noble metal surfaces. The discoveries had achieved the development of design strategies to select facet-selective molecules which can synthesize nanocrystals with expected shapes in both Pt and Pd system. At last, we exploited Pt facet-specific peptides and controlled the molecular interaction to produce one- and three- dimensional nanostructures composed of anisotropic nanoparticles in synthetic conditions without supramolecular pre-organization, demonstrating the full potential of biomolecules in mediating material formation process. My research on biomimetic

  2. Water-resistant, monodispersed and stably luminescent CsPbBr3/CsPb2Br5 core-shell-like structure lead halide perovskite nanocrystals

    Science.gov (United States)

    Qiao, Bo; Song, Pengjie; Cao, Jingyue; Zhao, Suling; Shen, Zhaohui; Gao, Di; Liang, Zhiqin; Xu, Zheng; Song, Dandan; Xu, Xurong

    2017-11-01

    Lead halide perovskite materials are thriving in optoelectronic applications due to their excellent properties, while their instability due to the fact that they are easily hydrolyzed is still a bottleneck for their potential application. In this work, water-resistant, monodispersed and stably luminescent cesium lead bromine perovskite nanocrystals coated with CsPb2Br5 were obtained using a modified non-stoichiometric solution-phase method. CsPb2Br5 2D layers were coated on the surface of CsPbBr3 nanocrystals and formed a core-shell-like structure in the synthetic processes. The stability of the luminescence of the CsPbBr3 nanocrystals in water and ethanol atmosphere was greatly enhanced by the photoluminescence-inactive CsPb2Br5 coating with a wide bandgap. The water-stable enhanced nanocrystals are suitable for long-term stable optoelectronic applications in the atmosphere.

  3. Spectroscopic properties of Er3+ and Yb3+ co-doped glass ceramics containing SrF2 nanocrystals

    International Nuclear Information System (INIS)

    Qiao Xvsheng; Fan Xianping; Wang Minquan; Zhang Xianghua

    2009-01-01

    The spectroscopic properties of Er 3+ /Yb 3+ co-doped 50SiO 2 -10Al 2 O 3 -20ZnF 2 -20SrF 2 glass and glass ceramic containing SrF 2 nanocrystals were investigated. The formation of SrF 2 nanocrystals in the glass ceramic was confirmed by XRD. The oscillator strengths for several transitions of the Er 3+ ions in the glass ceramic have been obtained and the Judd-Ofelt parameters were then determined. The XRD result and Judd-Ofelt parameters suggested that Er 3+ and Yb 3+ ions had efficiently enriched in the SrF 2 nanocrystals in the glass ceramic. The lifetime of excited states has been used to reveal the surroundings of luminescent Er 3+ and Yb 3+ and energy transfer (ET) mechanism between Er 3+ and Yb 3+ . Much stronger upconversion luminescence and longer lifetime of the Er 3+ /Yb 3+ co-doped glass ceramic were observed in comparison with the Er 3+ /Yb 3+ co-doped glass, which could be ascribed to more efficient ET from Yb 3+ to Er 3+ due to the enrichment of Yb 3+ and Er 3+ and the shortening of the distance between lanthanide ions in the precipitated SrF 2 nanocrystals.

  4. Synthesis of transparent chloroborosilicate nanoglass-ceramics: Crystallization and growth mechanism of BaCl2 nanocrystals

    Directory of Open Access Journals (Sweden)

    Nilanjana Shasmal

    2015-12-01

    Full Text Available Oxyfluoride glass-ceramics are extensively being investigated for their excellent optical properties and widespread use in photonic applications. But oxychloride systems are scarcely studied although they are potential candidates for those fields. Here we report chloroborosilicate glass system SiO2–B2O3–BaO–K2O–Al2O3–BaCl2 (mol% within which BaCl2 nanocrystals have been generated by melt-quench technique followed by heat treatment. Samples were characterized by differential scanning calorimetry, X-ray diffraction, infrared and UV–vis spectroscopy, elastic constants measurement, etc. Micro- and nanostructures were analyzed by using FESEM, TEM and SAED. Formation and growth mechanism of BaCl2 nanocrystals have been demonstrated with the help of schematic representations. Size (7–47 nm and morphology of the nanocrystals were found to be controlled by temperature and heat-treatment time. Activation energy for crystallization was determined by non-isothermal method using DSC and found to be 510 kJ/mol. Chloroborosilicate glasses containing BaCl2 nanocrystals having low-phonon energy (∼350 cm−1 are promising for different photonic applications.

  5. Structural and photoluminescent properties of a composite tantalum oxide and silicon nanocrystals embedded in a silicon oxide film

    International Nuclear Information System (INIS)

    Díaz-Becerril, T.; Herrera, V.; Morales, C.; García-Salgado, G.; Rosendo, E.; Coyopol, A.; Galeazzi, R.; Romano, R.; Nieto-Caballero, F.G.; Sarmiento, J.

    2017-01-01

    Tantalum oxide crystals encrusted in a silicon oxide matrix were synthesized by using a hot filament chemical vapor deposition system (HFCVD). A solid source composed by a mixture in different percentages of Ta 2 O 5 and silicon (Si) powders were used as reactants. The films were grown at 800 °C and 1000 °C under hydrogen ambient. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) at room temperature. From the XPS results it was confirmed the formation of a mixture of Tantalum oxide, silicon oxide and Si nanoparticles (Ta 2 O 5- SiO 2 -Si(nc)) as seen from the Si (2p) and Ta (4f) lines corresponding to Si + and Ta + states respectively. Ta 2 O 5 and Si nanocrystals (Si-NCs) embedded in the silicon oxide films were observed on HRTEM images which corroborate the XPS results. Finally the emission properties of the films exhibited a broad band from 400 to 850 nm caused by the independent PL properties of tantalum oxide and Si-NCs that compose the film. The intensity of the emissions was observed to be dependent on both temperature of deposition and the ratio Ta 2 O 5 /Si, used as initial reactants. Results from this work might supply useful data for the development of future light emitter devices.

  6. Modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy

    International Nuclear Information System (INIS)

    Wu Yuying; Liu Xiangfa; Jiang Binggang; Huang Chuanzhen

    2009-01-01

    Modification effect of Ni-38 wt.%Si on the Al-12 wt.%Si alloy has been studied by differential scanning calorimeter, torsional oscillation viscometer and liquid X-ray diffraction experiments. It is found that there is a modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy, i.e. primary Si can precipitate in the microstructure of Al-12 wt.%Si alloy when Ni and Si added in the form of Ni-38 wt.%Si, but not separately. Ni-38 wt.%Si alloy brings 'genetic materials' into the Al-Si melt, which makes the melt to form more ordering structure, promotes the primary Si precipitated. Moreover, the addition of Ni-38 wt.%Si, which decreases the solidification supercooling degree of Al-12 wt.%Si alloy, is identical to the effect of heterogeneous nuclei.

  7. Modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy

    Energy Technology Data Exchange (ETDEWEB)

    Wu Yuying [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China)], E-mail: wyy532001@163.com; Liu Xiangfa [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China); Shandong Binzhou Bohai Piston Co., Ltd., Binzhou 256602, Shandong (China); Jiang Binggang [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China); Huang Chuanzhen [School of Mechanical Engineering, Shandong University, Jinan 250061 (China)

    2009-05-27

    Modification effect of Ni-38 wt.%Si on the Al-12 wt.%Si alloy has been studied by differential scanning calorimeter, torsional oscillation viscometer and liquid X-ray diffraction experiments. It is found that there is a modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy, i.e. primary Si can precipitate in the microstructure of Al-12 wt.%Si alloy when Ni and Si added in the form of Ni-38 wt.%Si, but not separately. Ni-38 wt.%Si alloy brings 'genetic materials' into the Al-Si melt, which makes the melt to form more ordering structure, promotes the primary Si precipitated. Moreover, the addition of Ni-38 wt.%Si, which decreases the solidification supercooling degree of Al-12 wt.%Si alloy, is identical to the effect of heterogeneous nuclei.

  8. Size effect on the SHG properties of Cu-doped CdI2 nanocrystals

    International Nuclear Information System (INIS)

    Miah, M. Idrish

    2009-01-01

    Because the optically induced second harmonic generation (SHG) is prevented by symmetry in a centrosymmetric material, one needs to form noncentrosymmetric processes in order to observe the SHG. However, one of the efficient ways to enhance the noncentrosymmetricity of a material is to dope it with an appropriate impurity and amount. We grow Cu-doped CdI 2 layered nanocrystal structures from the mixture of CdI 2 and CuI using the standard Bridgman-Stockbarger method and investigate the nano-confined effects by studying the second-order optical effect via the measurements of SHG. The second-order susceptibility for the nanocrystals is calculated and the values at liquid helium temperature range from 0.38 to 0.83 pm V -1 for the thicknesses of 10-0.8 nm respectively. The size dependence demonstrates the nano-sized quantum-confined effect with a clear increase in the SHG with decreasing the thickness of the nanocrystal or crystal temperature. Since the local electron-phonon anharmonicity is described by third-order rank tensors in disordered systems, the SHG is very similar to that one introduced for the third-order optical susceptibility. It has been confirmed by observing the large photoluminescent yield of the pure crystals. The Raman scattering spectra taken for thin nanocrystals confirm the phonon modes originating from interlayer phonons crucially responsible for the observed effects. The obtained results show that the Cu-doped CdI 2 layered nanocrystals are promising materials for applications in optoelectronic nano-devices.

  9. Size effect on the SHG properties of Cu-doped CdI{sub 2} nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Miah, M. Idrish, E-mail: m.miah@griffith.edu.au [Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)

    2009-12-15

    Because the optically induced second harmonic generation (SHG) is prevented by symmetry in a centrosymmetric material, one needs to form noncentrosymmetric processes in order to observe the SHG. However, one of the efficient ways to enhance the noncentrosymmetricity of a material is to dope it with an appropriate impurity and amount. We grow Cu-doped CdI{sub 2} layered nanocrystal structures from the mixture of CdI{sub 2} and CuI using the standard Bridgman-Stockbarger method and investigate the nano-confined effects by studying the second-order optical effect via the measurements of SHG. The second-order susceptibility for the nanocrystals is calculated and the values at liquid helium temperature range from 0.38 to 0.83 pm V{sup -1} for the thicknesses of 10-0.8 nm respectively. The size dependence demonstrates the nano-sized quantum-confined effect with a clear increase in the SHG with decreasing the thickness of the nanocrystal or crystal temperature. Since the local electron-phonon anharmonicity is described by third-order rank tensors in disordered systems, the SHG is very similar to that one introduced for the third-order optical susceptibility. It has been confirmed by observing the large photoluminescent yield of the pure crystals. The Raman scattering spectra taken for thin nanocrystals confirm the phonon modes originating from interlayer phonons crucially responsible for the observed effects. The obtained results show that the Cu-doped CdI{sub 2} layered nanocrystals are promising materials for applications in optoelectronic nano-devices.

  10. Controllable synthesis of silver and silver sulfide nanocrystals via selective cleavage of chemical bonds

    International Nuclear Information System (INIS)

    Tang Aiwei; Wang Yu; Ye Haihang; Zhou Chao; Yang Chunhe; Li Xu; Peng Hongshang; Zhang Fujun; Hou Yanbing; Teng Feng

    2013-01-01

    A one-step colloidal process has been adopted to prepare silver (Ag) and silver sulfide (Ag 2 S) nanocrystals, thus avoiding presynthesis of an organometallic precursor and the injection of a toxic phosphine agent. During the reaction, a layered intermediate compound is first formed, which then acts as a precursor, decomposing into the nanocrystals. The composition of the as-obtained products can be controlled by selective cleavage of S–C bonds or Ag–S bonds. Pure Ag 2 S nanocrystals can be obtained by directly heating silver acetate (Ag(OAc)) and n-dodecanethiol (DDT) at 200 ° C without any surfactant, and pure Ag nanocrystals can be synthesized successfully if the reaction temperature is reduced to 190 ° C and the amount of DDT is decreased to 1 ml in the presence of a non-coordinating organic solvent (1-octadecene, ODE). Otherwise, the mixture of Ag and Ag 2 S is obtained by directly heating Ag(OAc) in DDT by increasing the reaction temperature or in a mixture of DDT and ODE at 200 ° C. The formation mechanism has been discussed in detail in terms of selective S–C and Ag–S bond dissociation due to the nucleophilic attack of DDT and the lower bonding energy of Ag–S. Interestingly, some products can easily self-assemble into two- or three-dimensional (2D or 3D) highly ordered superlattice structures on a copper grid without any additional steps. The excess DDT plays a key role in the superlattice structure due to the bundling and interdigitation of the thiolate molecules adsorbed on the as-obtained nanocrystals. (paper)

  11. Low-Temperature Electron Beam-Induced Transformations of Cesium Lead Halide Perovskite Nanocrystals

    Science.gov (United States)

    2017-01-01

    Cesium lead halide perovskite (CsPbX3, with X = Br, Cl, I) nanocrystals have been found to undergo severe modifications under the high-energy electron beam irradiation of a transmission electron microscope (80/200 keV). In particular, in our previous work, together with halogen desorption, Pb2+ ions were found to be reduced to Pb0 and then diffused to form lead nanoparticles at temperatures above −40 °C. Here, we present a detailed irradiation study of CsPbBr3 nanocrystals at temperatures below −40 °C, a range in which the diffusion of Pb0 atoms/clusters is drastically suppressed. Under these conditions, the irradiation instead induces the nucleation of randomly oriented CsBr, CsPb, and PbBr2 crystalline domains. In addition to the Br desorption, which accompanies Pb2+ reduction at all the temperatures, Br is also desorbed from the CsBr and PbBr2 domains at low temperatures, leading to a more pronounced Br loss, thus the final products are mainly composed of Cs and Pb. The overall transformation involves the creation of voids, which coalesce upon further exposure, as demonstrated in both nanosheets and nanocuboids. Our results show that although low temperatures hinder the formation of Pb nanoparticles in CsPbBr3 nanocrystals when irradiated, the nanocrystals are nevertheless unstable. Consequently, we suggest that an optimum combination of temperature range, electron energy, and dose rate needs to be carefully chosen for the characterization of halide perovskite nanocrystals to minimize both the Pb nanoparticle formation and the structural decomposition. PMID:28983524

  12. IN-SITU SYNCHROTRON PXRD STUDY OF SPINEL TYPE LiMn2O4 NANOCRYSTAL FORMATION

    DEFF Research Database (Denmark)

    Birgisson, Steinar; Jensen, Kirsten Marie Ørnsbjerg; Christiansen, Troels Lindahl

    Many solvothermal reactions have a great potential for environmentally friendly and easily scalable way for producing nanocrystalline materials on an industrial scale. Here we study hydrothermal formation of spinel LiMn2O4 which is a well-known cathode material for Li-ion batteries. The LiMn2O4...... nanoparticles are formed by reducing KMnO4 in an aqueous solution containing Li-ions. The reducing agent is an alcohol (here ethanol) and the reaction takes place under high pressure and temperature. The LiMn2O4 nanocrystals are unstable towards further reduction to Mn3O4 nanocrystals. Proposed reaction route...

  13. Temperature and thickness dependence of the grain boundary scattering in the Ni–Si silicide films formed on silicon substrate at 500 °C by RTA

    International Nuclear Information System (INIS)

    Utlu, G.; Artunç, N.; Selvi, S.

    2012-01-01

    Highlights: ► It is a systematic study of various thicknesses (18–290 nm) of Ni–Si silicide films. ► The temperature-dependent resistivity measurements of the films are studied. ► Resistivity variation of the films with temperature exhibits an unusual behavior. ► Parallel-resistor formula is reduced to Matthiessen's rule in this study. ► Reflection coefficients have been found in a wide temperature and thickness range. - Abstract: The temperature-dependent resistivity measurements of Ni–Si silicide films with 18–290 nm thicknesses are studied as a function of temperature and film thickness over the temperature range of 100–900 K. The most striking behavior is that the variation of the resistivity of the films with temperature exhibits an unusual behavior. The total resistivity of the Ni–Si silicide films in this work increases linearly with temperature up to a T m temperature, thereafter decreases rapidly and finally reaches zero. Our analyses have shown that in the temperature range of 100 to T m (K), parallel-resistor formula reduces to Matthiessen's rule and θ D Debye temperature becomes independent of the temperature for the given thickness range, whereas at high temperatures (above T m ) it increases slightly with thickness. θ D Debye temperature have been found to be about 400–430 K for the films. We have also shown that for temperature range of 100 to T m (K), linear variation of the resistivity of the silicide films with temperature has been caused from both grain-boundary scattering and electron–phonon scattering. That is why, resistivity data could have been analyzed in terms of the Mayadas–Schatzkes (M–S) model successfully. Theoretical and experimental values of reflection coefficients have been calculated by analyzing resistivity data using M–S model. According to our analysis, R increases with decreasing film thickness for a given temperature, while it is almost constant for the thickness range of 200–67 nm and 47

  14. Evolvement of soft templates in surfactant/cosurfactant system for shape control of ZnSe nanocrystals

    International Nuclear Information System (INIS)

    Hou Bo; Liu Yongjun; Li Yanjuan; Yuan Bo; Jia Mingfen; Jiang Fengzhi

    2012-01-01

    Highlights: ► Soft templates were found in the shape control synthesis of ZnSe nanocrystals. ► Micelle formation model in the soft templates system was proposed and proved. ► Different shapes of ZnSe nanocrystals were prepared and explained by proposed model. - Abstract: The evolution of soft templates in the synthesis of ZnSe nanocrystals realized through a surfactant/cosurfactant system was investigated and a micelle formation process model was proposed. Through freeze-fracture electron microscopy, it was proven that template micelles were formed in the zinc precursors. Furthermore, it was found that a long stirring period was essential for achieving the lowest energy state of the soft templates which were used for synthesizing monodisperse ZnSe quantum dots.

  15. Evolvement of soft templates in surfactant/cosurfactant system for shape control of ZnSe nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Hou Bo [Key Laboratory of Medicinal Chemistry for Natural Resource, Ministry of Education, School of Chemical Science and Technology, Yunnan University, Kunming 650091 (China); Liu Yongjun [Advanced Analysis and Measurement Center, Yunnan University, Kunming 650091 (China); Li Yanjuan [Key Laboratory of Medicinal Chemistry for Natural Resource, Ministry of Education, School of Chemical Science and Technology, Yunnan University, Kunming 650091 (China); Yuan Bo [Advanced Analysis and Measurement Center, Yunnan University, Kunming 650091 (China); Jia Mingfen [Key Laboratory of Medicinal Chemistry for Natural Resource, Ministry of Education, School of Chemical Science and Technology, Yunnan University, Kunming 650091 (China); Jiang Fengzhi, E-mail: fengzhij@ynu.edu.cn [Key Laboratory of Medicinal Chemistry for Natural Resource, Ministry of Education, School of Chemical Science and Technology, Yunnan University, Kunming 650091 (China); Advanced Analysis and Measurement Center, Yunnan University, Kunming 650091 (China)

    2012-03-25

    Highlights: Black-Right-Pointing-Pointer Soft templates were found in the shape control synthesis of ZnSe nanocrystals. Black-Right-Pointing-Pointer Micelle formation model in the soft templates system was proposed and proved. Black-Right-Pointing-Pointer Different shapes of ZnSe nanocrystals were prepared and explained by proposed model. - Abstract: The evolution of soft templates in the synthesis of ZnSe nanocrystals realized through a surfactant/cosurfactant system was investigated and a micelle formation process model was proposed. Through freeze-fracture electron microscopy, it was proven that template micelles were formed in the zinc precursors. Furthermore, it was found that a long stirring period was essential for achieving the lowest energy state of the soft templates which were used for synthesizing monodisperse ZnSe quantum dots.

  16. Photo-sensitive Ge nanocrystal based films controlled by substrate deposition temperature

    Science.gov (United States)

    Stavarache, Ionel; Maraloiu, Valentin Adrian; Negrila, Catalin; Prepelita, Petronela; Gruia, Ion; Iordache, Gheorghe

    2017-10-01

    Lowering the temperature of crystallization by deposition of thin films on a heated substrate represents the easiest way to find new means to develop and improve new working devices based on nanocrystals embedded in thin films. The improvements are strongly related with the increasing of operation speed, substantially decreasing the energy consumption and reducing unit fabrication costs of the respective semiconductor devices. This approach avoids major problems, such as those related to diffusion or difficulties in controlling nanocrystallites size, which appear during thermal treatments at high temperatures after deposition. This article reports on a significant progress given by structuring Ge nanocrystals (Ge-NCs) embedded in silicon dioxide (SiO2) thin films by heating the substrate at 400 °C during co-deposition of Ge and SiO2 by magnetron sputtering. As a proof-of-concept, a Si/Ge-NCs:SiO2 photo-sensitive structure was fabricated thereof and characterized. The structure shows superior performance on broad operation bandwidth from visible to near-infrared, as strong rectification properties in dark, significant current rise in the inversion mode when illuminated, high responsivity, high photo-detectivity of 1014 Jones, quick response and significant conversion efficiency with peak value reaching 850% at -1 V and about 1000 nm. This simple preparation approach brings an important contribution to the effort of structuring Ge nanocrystallites in SiO2 thin films at a lower temperature for the purpose of using these materials for devices in optoelectronics, solar cells and electronics on flexible substrates.

  17. Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °C.

    Science.gov (United States)

    Storozhevykh, Mikhail S; Arapkina, Larisa V; Yuryev, Vladimir A

    2015-12-01

    The article presents an experimental study of an issue of whether the formation of arrays of Ge quantum dots on the Si(001) surface is an equilibrium process or it is kinetically controlled. We deposited Ge on Si(001) at the room temperature and explored crystallization of the disordered Ge film as a result of annealing at 600 °C. The experiment has demonstrated that the Ge/Si(001) film formed in the conditions of an isolated system consists of the standard patched wetting layer and large droplike clusters of Ge rather than of huts or domes which appear when a film is grown in a flux of Ge atoms arriving on its surface. We conclude that the growth of the pyramids appearing at temperatures greater than 600 °C is controlled by kinetics rather than thermodynamic equilibrium whereas the wetting layer is an equilibrium structure. Primary 68.37.Ef; 68.55.Ac; 68.65.Hb; 81.07.Ta; 81.16.Dn.

  18. Magic clusters and (2x1) local structure formed in a half-unit cell of the Si(1 1 1)-(7x7) surface by Tl adsorption

    International Nuclear Information System (INIS)

    Kocan, P.; Visikovskiy, A.V.; Ohira, Y.; Yoshimura, M.; Ueda, K.; Tochihara, H.

    2008-01-01

    Formation of a (2x1) local structure is found at submonolayer growth of Tl on the Si(1 1 1)-(7x7) surface by means of scanning tunneling microscopy (STM). At low coverages, the (7x7) grid remains and the (2x1) structure is formed inside of the half-unit cells of the (7x7). The (2x1) coexists with other structures, such as of 'magic' clusters observed in the case of all other group III metals. Based on our STM observations we propose an atomic arrangement of the (2x1) structure

  19. Compositional and optical properties of SiO x films and (SiO x /SiO y ) junctions deposited by HFCVD

    Science.gov (United States)

    2014-01-01

    In this work, non-stoichiometric silicon oxide (SiO x ) films and (SiO x /SiO y ) junctions, as-grown and after further annealing, are characterized by different technique