SiP monolayers: New 2D structures of group IV-V compounds for visible-light photohydrolytic catalysts

Science.gov (United States)

Ma, Zhinan; Zhuang, Jibin; Zhang, Xu; Zhou, Zhen

2018-06-01

Because of graphene and phosphorene, two-dimensional (2D) layered materials of group IV and group V elements arouse great interest. However, group IV-V monolayers have not received due attention. In this work, three types of SiP monolayers were computationally designed to explore their electronic structure and optical properties. Computations confirm the stability of these monolayers, which are all indirect-bandgap semiconductors with bandgaps in the range 1.38-2.21 eV. The bandgaps straddle the redox potentials of water at pH = 0, indicating the potential of the monolayers for use as watersplitting photocatalysts. The computed optical properties demonstrate that certain monolayers of SiP 2D materials are absorbers of visible light and would serve as good candidates for optoelectronic devices.

Evidence of redshifts in the average solar line profiles of C IV and Si IV from OSO-8 observations

Science.gov (United States)

Roussel-Dupre, D.; Shine, R. A.

1982-01-01

Line profiles of C IV and Si V obtained by the Colorado spectrometer on OSO-8 are presented. It is shown that the mean profiles are redshifted with a magnitude varying from 6-20 km/s, and with a mean of 12 km/s. An apparent average downflow of material in the 50,000-100,000 K temperature range is measured. The redshifts are observed in the line center positions of spatially and temporally averaged profiles and are measured either relative to chromospheric Si I lines or from a comparison of sun center and limb profiles. The observations of 6-20 km/s redshifts place constraints on the mechanisms that dominate EUV line emission since it requires a strong weighting of the emission in regions of downward moving material, and since there is little evidence for corresponding upward moving materials in these lines.

IV-VI mid-infrared VECSEL on Si-substrate

Science.gov (United States)

Fill, M.; Felder, F.; Rahim, M.; Khiar, A.; Rodriguez, R.; Zogg, H.; Ishida, A.

2012-03-01

Optically pumped VECSEL (vertical external cavity surface emitting lasers) based on IV-VI semiconductors grown on Si cover the entire wavelength range between 3.0 and 10 μm. Thanks to their simple structure and large wavelength coverage they are an interesting alternative laser technology to access the mid-infrared wavelength region. The active layers consist either of homogeneous "bulk" layers, double heterostructures or quantum well structures of the PbSe, PbTe or PbS material system. Maximum operation temperatures of 325 K are achieved with output powers above 200 mWp. Further, continuously tunable VECSEL are presented, emitting between 3.2 and 5.4 μm. The single emission mode is continuously tunable over 50-100 nm around the center wavelength, yielding an output power > 10 mWp. The axial symmetric emission beam has a half divergence angle of < 3.3°.

Benzene biodegradation using an anaerobic column coupled to Mn(IV) reduction

Energy Technology Data Exchange (ETDEWEB)

Villatoro-Monzon, W.R.; Velasquez-Mejia, E.K.; Morales-Ibarria, M.G.; Razo-Flores, E. [Instituto Mexicano del Petroleo (Mexico). Programo de Biotenologia del Petroleo

2004-07-01

Benzene, toluene, and o, m, p-xylene compounds make up a large proportion of gasoline. Due to spills and leaks from underground tanks, these compounds frequently contaminate groundwater and sediment. In particular the high solubility of benzene makes it very mobile and an extra danger to groundwater. Moreover, there are strong links between benzene and cancer and thus benzene is considered a serious pollutant. Contaminated sites usually become anaerobic due to microbe action. In this study, benzene biodegradation was done in a glass column inoculated with anaerobic Rhine River sediment and using Mn(IV) as the final electron acceptor. Under steady state operation, benzene biodegradation efficiency was as high as 95 per cent. Carbon dioxide and Mn(II) recovery rates were 81 and 77 per cent respectively. Reactor sediment was withdrawn on day 104 and subject to DGGE profiling. This sediment showed different band patterns than the original sediment that was not exposed to benzene. The authors conclude that the species associated with the degradation of benzene are of the genus Propionibacterium and Actinomyces. 17 refs., 2 figs.

Structural features and electronic properties of group-III-, group-IV-, and group-V-doped Si nanocrystallites

International Nuclear Information System (INIS)

Ramos, L E; Degoli, Elena; Cantele, G; Ossicini, Stefano; Ninno, D; Furthmueller, J; Bechstedt, F

2007-01-01

We investigate the incorporation of group-III (B and Al), group-IV (C and Ge), and group-V (N and P) impurities in Si nanocrystallites. The structural features and electronic properties of doped Si nanocrystallites, which are faceted or spherical-like, are studied by means of an ab initio pseudopotential method including spin polarization. Jahn-Teller distortions occur in the neighborhood of the impurity sites and the bond lengths show a dependence on size and shape of the nanocrystallites. We find that the acceptor (group-III) and donor (group-V) levels become deep as the nanocrystallites become small. The energy difference between the spin-up and spin-down levels of group-III and group-V impurities decreases as the size of the Si nanocrystallite increases and tends to the value calculated for Si bulk. Doping with carbon introduces an impurity-related level in the energy gap of the Si nanocrystallites

Kinetic study of group IV nanoparticles ion beam synthesized in SiO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Bonafos, C. E-mail: bonafos@cemes.fr; Colombeau, B.; Altibelli, A.; Carrada, M.; Ben Assayag, G.; Garrido, B.; Lopez, M.; Perez-Rodriguez, A.; Morante, J.R.; Claverie, A

2001-05-01

Most studies concerning group IV (Si, Ge) ion beam synthesized nanocrystals in SiO{sub 2} have shown that a link exists between the observed physical properties and the characteristics of the 'populations' of nanoparticles (size-distribution, density, volume fraction). The aim of this paper is to study the influence of the initial supersaturation and annealing conditions on these characteristics. For this, experimental methods have been developed, that allow accurate statistical studies. Different transmission electron microscopy (TEM) imaging conditions have been tested and the most adequate ones have been identified for each system. An original method for the measurement of the density of precipitates embedded in an amorphous matrix has been developed and tested for Ge precipitates in SiO{sub 2} and has permitted to evidence a conservative Ostwald ripening during annealing. The kinetic behavior of Si nanoparticles has also been studied by coupling TEM measurements and 'atomistic' simulations. During annealing, the growth of these nanoparticles is very slow but their size significantly increases when increasing the initial Si excess. Simulations are in perfect agreement with experiment when taking into account interaction effects between particles.

About the structure and stability of complex carbonates of thorium (IV), cerium (IV), zirconium (IV), hafnium (IV)

International Nuclear Information System (INIS)

Dervin, Jacqueline

1972-01-01

This research thesis addressed the study of complex carbonates of cations of metals belonging to the IV A column, i.e. thorium (IV), zirconium (IV), hafnium (IV), and also cerium (IV) and uranium (VI), and more particularly focused on ionic compounds formed in solution, and also on the influence of concentration and nature of cations on stability and nature of the formed solid. The author first presents methods used in this study, discusses their precision and scope of validity. She reports the study of the formation of different complex ions which have been highlighted in solution, and the determination of their formation constants. She reports the preparation and study of the stability domain of solid complexes. The next part reports the use of thermogravimetric analysis, IR spectrometry, and crystallography for the structural study of these compounds

Extreme IR absorption in group IV-SiGeSn core-shell nanowires

Science.gov (United States)

Attiaoui, Anis; Wirth, Stephan; Blanchard-Dionne, André-Pierre; Meunier, Michel; Hartmann, J. M.; Buca, Dan; Moutanabbir, Oussama

2018-06-01

Sn-containing Si and Ge (Ge1-y-xSixSny) alloys are an emerging family of semiconductors with the potential to impact group IV material-based devices. These semiconductors provide the ability to independently engineer both the lattice parameter and bandgap, which holds the premise to develop enhanced or novel photonic and electronic devices. With this perspective, we present detailed investigations of the influence of Ge1-y-xSixSny layers on the optical properties of Si and Ge based heterostructures and nanowires. We found that by adding a thin Ge1-y-xSixSny capping layer on Si or Ge greatly enhances light absorption especially in the near infrared range, leading to an increase in short-circuit current density. For the Ge1-y-xSixSny structure at thicknesses below 30 nm, a 14-fold increase in the short-circuit current is observed with respect to bare Si. This enhancement decreases by reducing the capping layer thickness. Conversely, decreasing the shell thickness was found to improve the short-circuit current in Si/Ge1-y-xSixSny and Ge/Ge1-y-xSixSny core/shell nanowires. The optical absorption becomes very important by increasing the Sn content. Moreover, by exploiting an optical antenna effect, these nanowires show extreme light absorption, reaching an enhancement factor, with respect to Si or Ge nanowires, on the order of 104 in Si/Ge0.84Si0.04Sn0.12 and 12 in Ge/Ge0.84Si0.04Sn0.12. Furthermore, we analyzed the optical response after the addition of a dielectric layer of Si3N4 to the Si/Ge1-y-xSixSny core-shell nanowire and found approximatively a 50% increase in the short-circuit current density for a dielectric layer of thickness equal to 45 nm and both a core radius and a shell thickness greater than 40 nm. The core-shell optical antenna benefits from a multiplication of enhancements contributed by leaky mode resonances in the semiconductor part and antireflection effects in the dielectric part.

Results of the round robin exercise on IV-measurements of classic Si-solar cells

Energy Technology Data Exchange (ETDEWEB)

Van der Borg, N.J.C.M. [ECN Solar Energy, Petten (Netherlands)

2012-12-15

A round robin exercise was performed on IV measurements and spectral response measurements of solar cells. Seven partners participated in the exercise. The aim of the round robin was to enable the verification of their measurement facilities and procedures for IV-measurements on 'classic' Si-solar cells by comparing their measurement data with the other participants. In this way possible flaws in the equipment or procedures can be found and corrected for or the measurement uncertainties can be reassessed. The differences between the measurement results of the various partners were more or less within the expected measurement uncertainty although one or more partners may decide to use the results to reexamine their facilities or procedures.

Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode

Energy Technology Data Exchange (ETDEWEB)

Erdoğan, Erman, E-mail: e.erdogan@alparslan.edu.tr [Department of Physics, Faculty of Art and Science, Muş Alparslan University, Muş 49250 (Turkey); Kundakçı, Mutlu [Department of Physics, Faculty of Science, Atatürk University, Erzurum 25240 (Turkey)

2017-02-01

Metal-semiconductors (MSs) or Schottky barrier diodes (SBDs) have a significant potential in the integrated device technology. In the present paper, electrical characterization of Ag/InGaN/n-Si Schottky diode have been systematically carried out by simple Thermionic method (TE) and Norde function based on the I-V characteristics. Ag ohmic and schottky contacts are deposited on InGaN/n-Si film by thermal evaporation technique under a vacuum pressure of 1×10{sup −5} mbar. Ideality factor, barrier height and series resistance values of this diode are determined from I-V curve. These parameters are calculated by TE and Norde methods and findings are given in a comparetive manner. The results show the consistency for both method and also good agreement with other results obtained in the literature. The value of ideality factor and barrier height have been determined to be 2.84 and 0.78 eV at room temperature using simple TE method. The value of barrier height obtained with Norde method is calculated as 0.79 eV.

Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode

Science.gov (United States)

Erdoğan, Erman; Kundakçı, Mutlu

2017-02-01

Metal-semiconductors (MSs) or Schottky barrier diodes (SBDs) have a significant potential in the integrated device technology. In the present paper, electrical characterization of Ag/InGaN/n-Si Schottky diode have been systematically carried out by simple Thermionic method (TE) and Norde function based on the I-V characteristics. Ag ohmic and schottky contacts are deposited on InGaN/n-Si film by thermal evaporation technique under a vacuum pressure of 1×10-5 mbar. Ideality factor, barrier height and series resistance values of this diode are determined from I-V curve. These parameters are calculated by TE and Norde methods and findings are given in a comparetive manner. The results show the consistency for both method and also good agreement with other results obtained in the literature. The value of ideality factor and barrier height have been determined to be 2.84 and 0.78 eV at room temperature using simple TE method. The value of barrier height obtained with Norde method is calculated as 0.79 eV.

Oxide Structure Dependence of SiO2/SiOx/3C-SiC/n-Type Si Nonvolatile Resistive Memory on Memory Operation Characteristics

Science.gov (United States)

Yamaguchi, Yuichiro; Shouji, Masatsugu; Suda, Yoshiyuki

2012-11-01

We have investigated the dependence of the oxide layer structure of our previously proposed metal/SiO2/SiOx/3C-SiC/n-Si/metal metal-insulator-semiconductor (MIS) resistive memory device on the memory operation characteristics. The current-voltage (I-V) measurement and X-ray photoemission spectroscopy results suggest that SiOx defect states mainly caused by the oxidation of 3C-SiC at temperatures below 1000 °C are related to the hysteresis memory behavior in the I-V curve. By restricting the SiOx interface region, the number of switching cycles and the on/off current ratio are more enhanced. Compared with a memory device formed by one-step or two-step oxidation of 3C-SiC, a memory device formed by one-step oxidation of Si/3C-SiC exhibits a more restrictive SiOx interface with a more definitive SiO2 layer and higher memory performances for both the endurance switching cycle and on/off current ratio.

Electrochromatographic performance of graphene and graphene oxide modified silica particles packed capillary columns.

Science.gov (United States)

Zhao, Hongyan; Wang, Yizhou; Zhang, Danyu; Cheng, Heyong; Wang, Yuanchao

2018-04-01

Graphene oxide functionalized silica microspheres (GO@SiO 2 ) were synthesized based on condensation reaction between amino from aminosilica particles and carboxyl groups from GO. Reduction of GO@SiO 2 with hydrazinium hydroxide generated graphene modified silica particles (G@SiO 2 ). GO@SiO 2 and G@SiO 2 packed capillary columns for capillary electrochromatography were thereafter fabricated by pressure slurry packing with single-particle frits. GO of 0.3 mg/mL in dispersion solution for GO@SiO 2 synthesis was considered as a compromise between retaining and column efficiency whereas GO@SiO 2 of 20 mg/mL in slurries for column packing was chosen for a homogenous and tight bed. Optimum mobile phases were acquired considering both electroosmotic flow and resolution at an applied voltage of -6 kV as the following: acetonitrile/phosphate buffer (10 mM, pH 7.0), 75:25 (v/v) for polycyclic aromatic hydrocarbons and 50:50 (v/v) for aromatic compounds. A comparison was made between electrochromatographic performances for three PAHs (naphthalene, fluorene and phenanthrene) and three aromatic compounds of various polarities (toluene, aniline and phenol) on bare aminosilica, GO@SiO 2 and G@SiO 2 packed columns, which proved the contribution of alone or combinational actions of solvophobic effect and π-π electron stacking as well as hydrogen bonds to retaining behaviors by GO@SiO 2 and G@SiO 2 . Well over-run, over-day and over-column precisions (retention time: 0.3-1.4, 1.1-3.8 and 2.8-5.2%, respectively; peak area: 2.6-6.5, 4.8-8.3 and 6.5-12.6%, respectively) of GO@SiO 2 packed columns were a powerful proof for good reproducibility. Analytical characteristics of GO@SiO 2 packed capillary columns in CEC analysis of fresh water were evaluated with respect to linearity (R 2 = 0.9961-0.9989) over the range 0.1 to 100 mg/L and detection limits of 9.5 for naphthalene, 12.6 for fluorene and 16.2 μg/L for phenanthrene. Further application to fresh water increased the

First principles-based adsorption comparison of group IV elements (C, Si, Ge, and Sn) on Au(111)/Ag(111) surface

International Nuclear Information System (INIS)

Chakraborty, Sudip; Rajesh, Ch.

2012-01-01

We have reported a first-principle investigation of the structural properties of monomer and dimer for group IV elements (C, Si, Ge, and Sn) adsorbed on the Au(111) and Ag(111) surfaces. The calculations were performed by means of a plane wave based pseudopotential method under the framework of density functional theory. The results reveal the preference of adatom to be adsorbed on the hexagonal closed packed site of the metal (111) surfaces with strong binding energy. The structures introduce interlayer forces in the adsorbate. The strong bonding with the surface atoms is a result of p–d hybridization. The adsorption energy follows a sequence as one goes down in the group IV elements which imply that the interaction of the group IV elements with Au/Ag is decreasing as the atomic number increases.

Transition-Region Ultraviolet Explosive Events in IRIS Si IV: A Statistical Analysis

Science.gov (United States)

Bartz, Allison

2018-01-01

Explosive events (EEs) in the solar transition region are characterized by broad, non-Gaussian line profiles with wings at Doppler velocities exceeding the speed of sound. We present a statistical analysis of 23 IRIS (Interface Region Imaging Spectrograph) sit-and-stare observations, observed between April 2014 and March 2017. Using the IRIS Si IV 1394 Å and 1403 Å spectral windows and the 1400Å Slit Jaw images we have identified 581 EEs. We found that most EEs last less than 20 min. and have a spatial scale on the slit less than 10”, agreeing with measurements in previous work. We observed most EEs in active regions, regardless of date of observation, but selection bias of IRIS observations cannot be ruled out. We also present preliminary findings of optical depth effects from our statistical study.

Single-layer group IV-V and group V-IV-III-VI semiconductors: Structural stability, electronic structures, optical properties, and photocatalysis

Science.gov (United States)

Lin, Jia-He; Zhang, Hong; Cheng, Xin-Lu; Miyamoto, Yoshiyuki

2017-07-01

Recently, single-layer group III monochalcogenides have attracted both theoretical and experimental interest at their potential applications in photonic devices, electronic devices, and solar energy conversion. Excited by this, we theoretically design two kinds of highly stable single-layer group IV-V (IV =Si ,Ge , and Sn; V =N and P) and group V-IV-III-VI (IV =Si ,Ge , and Sn; V =N and P; III =Al ,Ga , and In; VI =O and S) compounds with the same structures with single-layer group III monochalcogenides via first-principles simulations. By using accurate hybrid functional and quasiparticle methods, we show the single-layer group IV-V and group V-IV-III-VI are indirect bandgap semiconductors with their bandgaps and band edge positions conforming to the criteria of photocatalysts for water splitting. By applying a biaxial strain on single-layer group IV-V, single-layer group IV nitrides show a potential on mechanical sensors due to their bandgaps showing an almost linear response for strain. Furthermore, our calculations show that both single-layer group IV-V and group V-IV-III-VI have absorption from the visible light region to far-ultraviolet region, especially for single-layer SiN-AlO and SnN-InO, which have strong absorption in the visible light region, resulting in excellent potential for solar energy conversion and visible light photocatalytic water splitting. Our research provides valuable insight for finding more potential functional two-dimensional semiconductors applied in optoelectronics, solar energy conversion, and photocatalytic water splitting.

Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

International Nuclear Information System (INIS)

Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

2014-01-01

Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN x /SiN y multilayers with high on/off ratio of 10 9 . High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

Science.gov (United States)

Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

2014-09-01

Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiNx/SiNy multilayers with high on/off ratio of 109. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

Nonvolatile field effect transistors based on protons and Si/SiO2Si structures

International Nuclear Information System (INIS)

Warren, W.L.; Vanheusden, K.; Fleetwood, D.M.; Schwank, J.R.; Winokur, P.S.; Knoll, M.G.; Devine, R.A.B.

1997-01-01

Recently, the authors have demonstrated that annealing Si/SiO 2 /Si structures in a hydrogen containing ambient introduces mobile H + ions into the buried SiO 2 layer. Changes in the H + spatial distribution within the SiO 2 layer were electrically monitored by current-voltage (I-V) measurements. The ability to directly probe reversible protonic motion in Si/SiO 2 /Si structures makes this an exemplar system to explore the physics and chemistry of hydrogen in the technologically relevant Si/SiO 2 structure. In this work, they illustrate that this effect can be used as the basis for a programmable nonvolatile field effect transistor (NVFET) memory that may compete with other Si-based memory devices. The power of this novel device is its simplicity; it is based upon standard Si/SiO 2 /Si technology and forming gas annealing, a common treatment used in integrated circuit processing. They also briefly discuss the effects of radiation on its retention properties

Three-dimensional fabrication and characterisation of core-shell nano-columns using electron beam patterning of Ge-doped SiO2

DEFF Research Database (Denmark)

Gontard, Lionel C.; Jinschek, Joerg R.; Ou, Haiyan

2012-01-01

electron tomography. The results show that transformations in insulators that have been subjected to intense irradiation using charged particles can be studied directly in three dimensions. The fabricated structures include core-shell nano-columns, sputtered regions, voids, and clusters. (C) 2012 American......A focused electron beam in a scanning transmission electron microscope (STEM) is used to create arrays of core-shell structures in a specimen of amorphous SiO2 doped with Ge. The same electron microscope is then used to measure the changes that occurred in the specimen in three dimensions using...

Controllable preparation of copper phthalocyanine single crystal nano column and its chlorine gas sensing properties

Directory of Open Access Journals (Sweden)

Jianhong Zhao

2016-09-01

Full Text Available The unsubstituted copper phthalocyanine (CuPc single crystal nano columns were fabricated for the first time as chlorine (Cl2 gas sensors in this paper. The nano columns of CuPc have been prepared on different substrates via template-free physical vapor deposition (PVD approach. The growth mechanism of CuPc nano column on quartz was explored and the same condition used on other substrates including glass, sapphire (C-plane, M-plane, R-plane, Si and SiO2/Si came to a same conclusion, which confirmed that the aligned growth of CuPc nano column is not substrate-dependent. And then the CuPc nano column with special morphology was integrated as in-situ sensor device which exhibits high sensitivity and selectivity towards Cl2 at room temperature with a minimum detection limit as low as 0.08 ppm. The response of sensor was found to increase linearly (26∼659% with the increase for Cl2 within concentration range (0.08∼4.0ppm. These results clearly demonstrate the great potential of the nano column growth and device integration approach for sensor device.

Synthesis and ion-exchange properties of cerium(IV) molybdate

Energy Technology Data Exchange (ETDEWEB)

Srivastava, S K; Singh, Raj Pal; Agrawal, Sushma; Kumar, Satish [Roorkee Univ. (India). Dept. of Chemistry

1977-01-01

The synthesis, ion exchange properties, and the separation of a number of cation pairs on the columns of cerium (IV) molybdate is discussed. In order to obtain the product in gel form showing a high exchange capacity and suitable for column operation, preliminary experiments were performed to determine the optimum conditions of precipitation, i.e., the concentration of ceric and molybdate solutions, mixing ratio, pH of precipitation and the order of mixing. Cerium (IV) molybdate, prepared under the optimum conditions of concentration, acidity etc., shows exchange capacity of 0.96 meg per g of exchanger. The sorption of a large number of metal ions has been investigated and the compound shows promising behaviour as cation exchanger. Numerous separations of analytical and radiochemical interest have been performed on the column of this exchanger with great efficiency.

Synthesis and ion-exchange properties of cerium(IV) molybdate

International Nuclear Information System (INIS)

Srivastava, S.K.; Raj Pal Singh; Sushma Agrawal; Satish Kumar

1977-01-01

The synthesis, ion exchange properties, and the separation of a number of cation pairs on the columns of cerium (IV) molybdate is discussed. In order to obtain the product in gel form showing a high exchange capacity and suitable for column operation, preliminary experiments were performed to determine the optimum conditions of precipitation, i.e., the concentration of ceric and molybdate solutions, mixing ratio, pH of precipitation and the order of mixing. Cerium (IV) molybdate, prepared under the optimum conditions of concentration, acidity etc., shows exchange capacity of 0.96 meg per g of exchanger. The sorption of a large number of metal ions has been investigated and the compound shows promising behaviour as cation exchanger. Numerous separations of analytical and radiochemical interest have been performed on the column of this exchanger with great efficiency. (T.G.)

Plasma metabolism of apolipoprotein A-IV in humans

International Nuclear Information System (INIS)

Ghiselli, G.; Krishnan, S.; Beigel, Y.; Gotto, A.M. Jr.

1986-01-01

As assessed by molecular sieve chromatography and quantitation by a specific radioimmunoassay, apoA-IV is associated in plasma with the triglyceride-rich lipoproteins, to a high density lipoprotein (HDL) subfraction of smaller size than HDL3, and to the plasma lipoprotein-free fraction (LFF). In this study, the turnover of apoA-IV associated to the triglyceride-rich lipoproteins, HDL and LFF was investigated in vivo in normal volunteers. Human apoA-IV isolated from the thoracic duct lymph chylomicrons was radioiodinated and incubated with plasma withdrawn from normal volunteers after a fatty meal. Radioiodinated apoA-IV-labeled triglyceride-rich lipoproteins, HDL, and LFF were then isolated by chromatography on an AcA 34 column. Shortly after the injection of the radioiodinated apoA-IV-labeled triglyceride-rich lipoproteins, most of the radioactivity could be recovered in the HDL and LFF column fractions. On the other hand, when radioiodinated apoA-IV-labeled HDL or LFF were injected, the radioactivity remained with the originally injected fractions at all times. The residence time in plasma of 125 I-labeled apoA-IV, when injected in association with HDL or LFF, was 1.61 and 0.55 days, respectively. When 125 I-labeled apoA-IV was injected as a free protein, the radioactivity distributed rapidly among the three plasma pools in proportion to their mass. The overall fractional catabolic rate of apoA-IV in plasma was measured in the three normal subjects and averaged 1.56 pools per day. The mean degradation rate of apoA-IV was 8.69 mg/kg X day

Synthesis of Reusable Silica Nanosphere-Supported Pt(IV Complex for Formation of Disulfide Bonds in Peptides

Directory of Open Access Journals (Sweden)

Xiaonan Hou

2017-02-01

Full Text Available Some peptide-based drugs, including oxytocin, vasopressin, ziconotide, pramlintide, nesiritide, and octreotide, contain one intramolecular disulfide bond. A novel and reusable monodispersed silica nanosphere-supported Pt(IV complex (SiO2@TPEA@Pt(IV; TPEA: N-[3-(trimethoxysilylpropyl]ethylenediamine was synthesized via a four-step procedure and was used for the formation of intramolecular disulfide bonds in peptides. Transmission electron microscopy (TEM and chemical mapping results for the Pt(II intermediates and for SiO2@TPEA@Pt(IV show that the silica nanospheres possess a monodisperse spherical structure and contain uniformly-distributed Si, O, C, N, Cl, and Pt. The valence state of Pt on the silica nanospheres was characterized by X-ray photoelectron spectroscopy (XPS. The Pt(IV loaded on SiO2@TPEA@Pt(IV was 0.15 mmol/g, as determined by UV-VIS spectrometry. The formation of intramolecular disulfides in six dithiol-containing peptides of variable lengths by the use of SiO2@TPEA@Pt(IV was investigated, and the relative oxidation yields were determined by high-performance liquid chromatography (HPLC. In addition, peptide 1 (Ac-CPFC-NH2 was utilized to study the reusability of SiO2@TPEA@Pt(IV. No significant decrease in the relative oxidation yield was observed after ten reaction cycles. Moreover, the structure of SiO2@TPEA@Pt(IV after being used for ten cycles was determined to be similar to its initial one, demonstrating the cycling stability of the complex.

Practical routes to (SiH₃)₃P: applications in group IV semiconductor activation and in group III-V molecular synthesis.

Science.gov (United States)

Tice, Jesse B; Chizmeshya, A V G; Tolle, J; D' Costa, V R; Menendez, J; Kouvetakis, J

2010-05-21

The (SiH₃)₃P hydride is introduced as a practical source for n-doping of group IV semiconductors and as a highly-reactive delivery agent of -(SiH₃)₂P functionalities in exploratory synthesis. In contrast to earlier methods, the compound is produced here in high purity quantitative yields via a new single-step method based on reactions of SiH₃Br and (Me₃Sn)₃P, circumventing the need for toxic and unstable starting materials. As an initial demonstration of its utility we synthesized monosubstituted Me₂M-P(SiH₃)₂ (M = Al, Ga, In) derivatives of Me₃M containing the (SiH₃)₂P ligand for the first time, in analogy to the known Me₂M-P(SiMe₃)₂ counterparts. A dimeric structure of Me₂M-P(SiH₃)₂ is proposed on the basis of spectroscopic characterizations and quantum chemical simulations. Next, in the context of materials synthesis, the (SiH₃)₃P compound was used to dope germanium for the first time by building a prototype p(++)Si(100)/i-Ge/n-Ge photodiode structure. The resultant n-type Ge layers contained active carrier concentrations of 3-4 × 10¹⁹ atoms cm⁻³ as determined by spectroscopic ellipsometry and confirmed by SIMS. Strain analysis using high resolution XRD yielded a Si content of 4 × 10²⁰ atoms cm⁻³ in agreement with SIMS and within the range expected for incorporating Si₃P type units into the diamond cubic Ge matrix. Extensive characterizations for structure, morphology and crystallinity indicate that the Si co-dopant plays essentially a passive role and does not compromise the device quality of the host material nor does it fundamentally alter its optical properties.

Adsorption of phosphate from aqueous solutions and sewage using zirconium loaded okara (ZLO): Fixed-bed column study

International Nuclear Information System (INIS)

Nguyen, T.A.H.; Ngo, H.H.; Guo, W.S.; Pham, T.Q.; Li, F.M.; Nguyen, T.V.; Bui, X.T.

2015-01-01

This study explores the potential of removing phosphorus from aqueous solutions and sewage by Zr(IV)-loaded okara (ZLO) in the fixed-bed column. Soybean residue (okara) was impregnated with 0.25 M Zr(IV) solution to prepare active binding sites for phosphate. The effect of several factors, including flow rate, bed height, initial phosphorus concentration, pH and adsorbent particle size on the performance of ZLO was examined. The maximum dynamic adsorption capacity of ZLO for phosphorus was estimated to be 16.43 mg/g. Breakthrough curve modeling indicated that Adams–Bohart model and Thomas model fitted the experimental data better than Yoon–Nelson model. After treatment with ZLO packed bed column, the effluent could meet the discharge standard for phosphorus in Australia. Successful desorption and regeneration were achieved with 0.2 NaOH and 0.1 HCl, respectively. The results prove that ZLO can be used as a promising phosphorus adsorbent in the dynamic adsorption system. - Highlights: • Dynamic adsorption of P from water and wastewater by Zr(IV)-loaded okara was tested. • Effects of column design parameters on the adsorption performance were investigated. • The dynamic adsorption capacity of Zr(IV)-loaded okara for P was reasonably high. • The spent column was effectively regenerated with 0.2 M NaOH followed by 0.1 M HCl. • Zr(IV)-loaded okara column was efficient in eliminating P from municipal sewage

Adsorption of phosphate from aqueous solutions and sewage using zirconium loaded okara (ZLO): Fixed-bed column study

Energy Technology Data Exchange (ETDEWEB)

Nguyen, T.A.H. [Centre for Technology in Water and Wastewater, School of Civil and Environmental Engineering, University of Technology, Sydney (UTS), 15 Broadway, Ultimo, NSW 2007 (Australia); Ngo, H.H., E-mail: ngohuuhao121@gmail.com [Centre for Technology in Water and Wastewater, School of Civil and Environmental Engineering, University of Technology, Sydney (UTS), 15 Broadway, Ultimo, NSW 2007 (Australia); Guo, W.S. [Centre for Technology in Water and Wastewater, School of Civil and Environmental Engineering, University of Technology, Sydney (UTS), 15 Broadway, Ultimo, NSW 2007 (Australia); Pham, T.Q. [Faculty of Geography, University of Science, Vietnam National University, Hanoi (Viet Nam); Li, F.M. [College of Environmental Science and Engineering, Ocean University of China, Qingdao 266100 (China); Nguyen, T.V. [Centre for Technology in Water and Wastewater, School of Civil and Environmental Engineering, University of Technology, Sydney (UTS), 15 Broadway, Ultimo, NSW 2007 (Australia); Bui, X.T. [Environmental Engineering and Management Research Group, Ton Duc Thang University, Ho Chi Minh City (Viet Nam); Faculty of Environment and Natural Resources, Ho Chi Minh City University of Technology-Vietnam National University, Ho Chi Minh City (Viet Nam)

2015-08-01

This study explores the potential of removing phosphorus from aqueous solutions and sewage by Zr(IV)-loaded okara (ZLO) in the fixed-bed column. Soybean residue (okara) was impregnated with 0.25 M Zr(IV) solution to prepare active binding sites for phosphate. The effect of several factors, including flow rate, bed height, initial phosphorus concentration, pH and adsorbent particle size on the performance of ZLO was examined. The maximum dynamic adsorption capacity of ZLO for phosphorus was estimated to be 16.43 mg/g. Breakthrough curve modeling indicated that Adams–Bohart model and Thomas model fitted the experimental data better than Yoon–Nelson model. After treatment with ZLO packed bed column, the effluent could meet the discharge standard for phosphorus in Australia. Successful desorption and regeneration were achieved with 0.2 NaOH and 0.1 HCl, respectively. The results prove that ZLO can be used as a promising phosphorus adsorbent in the dynamic adsorption system. - Highlights: • Dynamic adsorption of P from water and wastewater by Zr(IV)-loaded okara was tested. • Effects of column design parameters on the adsorption performance were investigated. • The dynamic adsorption capacity of Zr(IV)-loaded okara for P was reasonably high. • The spent column was effectively regenerated with 0.2 M NaOH followed by 0.1 M HCl. • Zr(IV)-loaded okara column was efficient in eliminating P from municipal sewage.

SiPM-based azimuthal position sensor in ANITA-IV Hi-Cal Antarctic balloon experiment

Science.gov (United States)

Novikov, A.; Besson, D.; Chernysheva, I.; Dmitrenko, V.; Grachev, V.; Petrenko, D.; Prohira, S.; Shustov, A.; Ulin, S.; Uteshev, Z.; Vlasik, K.

2017-01-01

Hi-Cal (High-Altitude Calibration) is a balloon-borne experiment that will be launched in December, 2016 in Antarctica following ANITA-IV (Antarctic Impulsive Transient Antenna) and will generate a broad-band pulse over the frequency range expected from radiation induced by a cosmic ray shower. Here, we describe a device based on an array of silicon photomultipliers (SiPMs) for determination of the azimuthal position of Hi-Cal. The angular resolution of the device is about 3 degrees. Since at the float altitude of ˜38 km the pressure will be ˜0.5 mbar and temperature ˜ - 20 °C, the equipment has been tested in a chamber over a range of corresponding pressures (0.5 ÷ 1000) mbar and temperatures (-40 ÷ +50) °C.

SiPM-based azimuthal position sensor in ANITA-IV Hi-Cal Antarctic balloon experiment

International Nuclear Information System (INIS)

Novikov, A; Besson, D; Chernysheva, I; Dmitrenko, V; Grachev, V; Petrenko, D; Shustov, A; Ulin, S; Uteshev, Z; Vlasik, K; Prohira, S

2017-01-01

Hi-Cal (High-Altitude Calibration) is a balloon-borne experiment that will be launched in December, 2016 in Antarctica following ANITA-IV (Antarctic Impulsive Transient Antenna) and will generate a broad-band pulse over the frequency range expected from radiation induced by a cosmic ray shower. Here, we describe a device based on an array of silicon photomultipliers (SiPMs) for determination of the azimuthal position of Hi-Cal. The angular resolution of the device is about 3 degrees. Since at the float altitude of ∼38 km the pressure will be ∼0.5 mbar and temperature ∼ − 20 °C, the equipment has been tested in a chamber over a range of corresponding pressures (0.5 ÷ 1000) mbar and temperatures (−40 ÷ +50) °C. (paper)

Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiN{sub x}/SiN{sub y} multilayers

Energy Technology Data Exchange (ETDEWEB)

Jiang, Xiaofan; Ma, Zhongyuan, E-mail: zyma@nju.edu.cn; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan [National Laboratory of Solid State Microstructures, Jiangsu Provincial Key Laboratory of Photonic Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

2014-09-28

Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN{sub x}/SiN{sub y} multilayers with high on/off ratio of 10{sup 9}. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

Reduction of Mn-oxides by ferrous iron in a flow system: column experiment and reactive transport modeling

DEFF Research Database (Denmark)

Postma, Diederik Jan; Appelo, C. A. J.

2000-01-01

Cl2 solution into the column, an ion distribution pattern was observed in the effluent that suggests the formation of separate reaction fronts for Mn(III)-oxide and Mn(IV)-oxide travelling at different velocities through the column. At the proximal reaction front, Fe21 reacts with MnO2 producing Fe......The reduction of Mn-oxide by Fe21 was studied in column experiments, using a column filled with natural Mn-oxide coated sand. Analysis of the Mn-oxide indicated the presence of both Mn(III) and Mn(IV) in the Mn-oxide. The initial exchange capacity of the column was determined by displacement...... of adsorbed Ca21 with Mg21. Subsequently a FeCl2 solution was injected into the column causing the reduction of the Mn-oxide and the precipitation of Fe(OH)3. Finally the exchange capacity of the column containing newly formed Fe(OH)3 was determined by injection of a KBr solution. During injection of the Fe...

Rapid ionization of the environment of SN 1987A

International Nuclear Information System (INIS)

Raga, A.C.

1987-01-01

It has been suggested by some authors that IUE observations of the supernova SN 1987A show the presence of a strong component of the interstellar C IV 1550 and Si IV 1393 absorption lines at a velocity that approximately corresponds to the velocity of the LMC. It is possible that this component might come from originally neutral (or at least not very highly ionized) gas which has been photoionized by the initially very strong ionizing radiation field of the supernova. Theoretical considerations of this scenario lead to the study of fast (with velocities of about c) ionization fronts. It is shown that for reasonable model parameters it is possible to obtain considerably large C IV column densities, in agreement with the IUE observations. On the other hand, the models do not so easily predict the large Si IV column densities that are also obtained from the IUE observations. It is found that only models in which the interstellar medium surrounding SN 1987A is initially composed of already ionized hydrogen and helium predict substantial Si IV column densities. This result provides an interesting prediction of the ionization state of the environment of the presupernova star. 9 references

Rapid ionization of the environment of SN 1987A

Science.gov (United States)

Raga, A. C.

1987-01-01

It has been suggested by some authors that IUE observations of the supernova SN 1987A show the presence of a strong component of the interstellar C IV 1550 and Si IV 1393 absorption lines at a velocity that approximately corresponds to the velocity of the LMC. It is possible that this component might come from originally neutral (or at least not very highly ionized) gas which has been photoionized by the initially very strong ionizing radiation field of the supernova. Theoretical considerations of this scenario lead to the study of fast (with velocities of about c) ionization fronts. It is shown that for reasonable model parameters it is possible to obtain considerably large C IV column densities, in agreement with the IUE observations. On the other hand, the models do not so easily predict the large Si IV column densities that are also obtained from the IUE observations. It is found that only models in which the interstellar medium surrounding SN 1987A is initially composed of already ionized hydrogen and helium predict substantial Si IV column densities. This result provides an interesting prediction of the ionization state of the environment of the presupernova star.

Real-Time Speciation of Uranium During Active Bioremediation and U(IV) Reoxidation

International Nuclear Information System (INIS)

Komlos, J.; Mishra, B.; Lanzirotti, A.; Myneni, S.; Jaffe, P.

2008-01-01

The biological reduction of uranium from soluble U(VI) to insoluble U(IV) has shown potential to prevent uranium migration in groundwater. To gain insight into the extent of uranium reduction that can occur during biostimulation and to what degree U(IV) reoxidation will occur under field relevant conditions after biostimulation is terminated, X-ray absorption near edge structure (XANES) spectroscopy was used to monitor: (1) uranium speciation in situ in a flowing column while active reduction was occurring; and (2) in situ postbiostimulation uranium stability and speciation when exposed to incoming oxic water. Results show that after 70 days of bioreduction in a high (30 mM) bicarbonate solution, the majority (>90%) of the uranium in the column was immobilized as U(IV). After acetate addition was terminated and oxic water entered the column, in situ real-time XANES analysis showed that U(IV) reoxidation to U(VI) (and subsequent remobilization) occurred rapidly (on the order of minutes) within the reach of the oxygen front and the spatial and temporal XANES spectra captured during reoxidation allowed for real-time uranium reoxidation rates to be calculated.

Negative resistance in I-V characteristics and 2D vortex dynamics in a-W/Si multilayer superconductors with periodic antidot arrays

Energy Technology Data Exchange (ETDEWEB)

Kurosu, Y.; Yokoyama, M.; Kuwasawa, Y.; Matsuda, S.; Nojima, T

2003-05-01

We have examined the vortex dynamics in W/Si multilayers with the arrays of antidots in the form of square and triangular lattices. In the measurements of I-V characteristics as a function of temperature T and magnetic field H, we find a specific feature that the V(I) curves coincide irrespective of T. Especially the V(I) curves with a negative slope are observed in the multilayer with triangular arrays.

Control of in-plane orientation of phthalocyanine molecular columns using vicinal Si(001)-(2x1)-H

International Nuclear Information System (INIS)

Nakamura, Masakazu; Matsunobe, Takeshi; Tokumoto, Hiroshi

2001-01-01

In-plane crystal orientation of copper phthalocyanine (CuPc) films formed by organic molecular-beam epitaxy have been successfully controlled by using vicinal Si(001)-(2x1)-H as a substrate, containing atomic steps of an approximately 4 nm period. A continuous film was grown at 60 degree C and the film thickness ranged between 5 and 8 molecular layers. By observing a frictional force image of the film, 90% of the molecular columns were found to align across the substrate step rows. The preferential orientation is considered to be induced by artificial surface lattices, which result from the striped effective contact area between the rigid CuPc crystals and the stair-like surfaces. The anisotropic optical properties of the film have been also confirmed by polarized reflection measurements. [copyright] 2001 American Institute of Physics

FORTRAN program for calculating liquid-phase and gas-phase thermal diffusion column coefficients

International Nuclear Information System (INIS)

Rutherford, W.M.

1980-01-01

A computer program (COLCO) was developed for calculating thermal diffusion column coefficients from theory. The program, which is written in FORTRAN IV, can be used for both liquid-phase and gas-phase thermal diffusion columns. Column coefficients for the gas phase can be based on gas properties calculated from kinetic theory using tables of omega integrals or on tables of compiled physical properties as functions of temperature. Column coefficients for the liquid phase can be based on compiled physical property tables. Program listings, test data, sample output, and users manual are supplied for appendices

Separation of Th(IV) and U(VI) by extraction chromatography

International Nuclear Information System (INIS)

Nadkarni, M.N.; Mayankutty, P.C.; Pillai, N.S.

1984-01-01

Application of extraction chromatography to the analytical separation of Th(IV) and U(VI) has been investigated. The stationary phase was a macroporous resin Amberlite XE-270 impregnated with undiluted tri-n-butylphosphate (TBP) and the mobile phase was either 5.0M HNO 3 or 6M HCl. Separation of traces of Th(IV) from large quantities of U(VI) was achieved on a laboratory column by elution of the absorbed Th(IV) with 6M HCl. (author)

ADAM28 localizes to HLA-G+ trophoblasts and promotes column cell outgrowth.

Science.gov (United States)

De Luca, L C; Le, H T; Mara, D L; Beristain, A G

2017-07-01

Trophoblast progenitor cell differentiation towards the extravillous trophoblast (EVT) lineage initiates within proximal regions of anchoring columns of first trimester placental villi. While molecular processes controlling the initial stages of progenitor cell differentiation along the EVT pathway have been described, much remains unknown about factors important in distal column cell differentiation into invasive EVTs. ADAMs are proteases that regulate growth factor signaling, cell-matrix adhesion, and matrix proteolysis, and thus impact many processes relevant in placentation. Global gene expression studies identified the ADAM subtype, ADAM28, to be highly expressed in EVT-like trophoblasts, suggesting that it may play a role in EVT function. This study aims to test the functional importance of ADAM28 in column cell outgrowth and maintenance. ADAM28 mRNA levels and protein localization were determined by qPCR and immunofluorescence microscopy analyses in purified placental villi cell populations and tissues. ADAM28 function in trophoblast column outgrowth was examined using ADAM28-targetting siRNAs in Matrigel-imbedded placental explant cultures. Within placental villi, ADAM28 mRNA levels were highest in HLA-G + column trophoblasts, and consistent with this, ADAM28 was preferentially localized to HLA-G + trophoblasts within distal anchoring columns and decidual tissue. siRNA-directed loss of ADAM28 impaired trophoblast column outgrowth and resulted in increased apoptosis in matrix-invading trophoblasts. Our findings suggest that ADAM28 promotes column outgrowth by providing survival cues within anchoring column cells. This study also provides insight into a possible role for ADAM28 in driving differentiation of column trophoblasts into invasive HLA-G + EVT subsets. Copyright © 2017 Elsevier Ltd. All rights reserved.

A fresnoite-structure-related mixed valent titanium(III/IV) chlorosilicate, Ba{sub 3}Ti{sub 2}Si{sub 4}O{sub 14}Cl: A flux crystal growth route to Ti(III) containing oxides

Energy Technology Data Exchange (ETDEWEB)

Abeysinghe, Dileka; Smith, Mark D.; Loye, Hans-Conrad zur, E-mail: zurloye@mailbox.sc.edu

2017-06-15

Single crystals of mixed valent barium titanium(III/IV) chlorosilicate, Ba{sub 3}Ti{sub 2}Si{sub 4}O{sub 14}Cl{sub 0.91}O{sub 0.09}, were grown in a high temperature molten chloride flux involving an in situ reduction step. The fresnoite structure related Ba{sub 3}Ti{sub 2}Si{sub 4}O{sub 14}Cl{sub 0.91}O{sub 0.09} crystallizes in the tetragonal space group P4/mbm with lattice parameters of a=8.6717(2) Å, c=18.6492(5) Å. The title compound exhibits a 3D structure consisting of 2D layers of fused Ti{sub 2}O{sub 9} and Si{sub 4}O{sub 12} groups and 2D layers of fused Ti{sub 2}O{sub 9}Cl{sub 2} and Si{sub 2}O{sub 7} groups that are linked via barium atoms. The in situ reduction of Ti(IV) to Ti(III) is achieved via the addition of metallic Mg to the flux to function as the reducing agent. The temperature dependence of the magnetic susceptibility shows simple paramagnetism above 100 K. There is a discontinuity in the susceptibility data below 100 K, which might be due to a structural change that takes place resulting in charge ordering. - Graphical abstract: The fresnoite structure related novel reduced barium titanium chlorosilicate, Ba{sub 3}Ti{sub 2}Si{sub 4}O{sub 14}Cl{sub 0.91}O{sub 0.09}, were synthesized via flux method. An in situ reduction of Ti(IV) to Ti(III) achieved using Mg metal. The 3D structure consists 2D layers of fused Ti{sub 2}O{sub 9} and Si{sub 4}O{sub 12} and 2D layers of fused Ti{sub 2}O{sub 9}Cl{sub 2} and Si{sub 2}O{sub 7} connected via barium atoms. Compound shows simple paramagnetism above 100 K. - Highlights: • The fresnoite related Ba{sub 3}Ti{sub 2}Si{sub 4}O{sub 14}Cl{sub 0.91}O{sub 0.09} were grown via molten flux method. • The in situ reduction of Ti(IV) to Ti(III) is achieved using metallic Mg. • 2D layers of Ti{sub 2}O{sub 9} and Si{sub 4}O{sub 12} and Ti{sub 2}O{sub 9}Cl{sub 2} and Si{sub 2}O{sub 7} connect via Ba atoms. • The magnetic susceptibility shows simple paramagnetism above 100 K.

Change of I-V characteristics of SiC diodes upon reactor irradiation; Modification des caracteristiques I-V de jonctions p-n au SiC du fait d'une irradiation dans un reacteur; Izmeneniya kharakteristik I-V vyrashchennogo v SiC perekhoda tipa p-n posle oblucheniya ego v reaktore; Modificaciones que sufren por irradiacion en un reactor las caracteristicas I-V de uniones p-n en SiC

Energy Technology Data Exchange (ETDEWEB)

Heerschap, M; De Coninck, R [Solid State Physics Dept., SCK-CEN, Mol (Belgium)

1962-04-15

In search for semiconductors, which can be used in high-flux reactors in order to measure flux distributions, we irradiated SiC p-n junctions in the Belgium BR-1 reactor. Two types of SiC-diodes of different origin have been irradiated. These junctions are grown in the Lely-furnace. The change in forward and reverse characteristics have been measured during and after irradiation up to temperatures of 150{sup o}C, while measurements up to a temperature of 500{sup o}C are in progress. It has been found that one type resists BR-1 neutrons up to an integrated flux of 10{sup 15} n/cm{sup 2}, while the other resists irradiation up to a flux of 10{sup 17} n/cm{sup 2}. The changes in characteristics are given as well as the result of some annealing experiments. (author) [French] En recherchant des semi-conducteurs pouvant servir a mesurer les distributions de flux dans les reacteurs a haut flux de neutrons, les auteurs ont irradie des jonctions p-n au SiC dans le reacteur belge BR-1. Deux types de diodes a SiC d'origines differentes ont ete ainsi irradies. Les jonctions en question sont preparees par etirage dans le four Lely. Les auteurs ont mesure les modifications subies par les caracteristiques I-V apres et pendant l'irradiation a des temperatures allant jusqu'a 150{sup o}C; ils poursuivent leurs mesures dans la gamme des temperatures allant de 150{sup o}C a 500{sup o}C. Us ont constate que l'un des types de diode a SiC resiste aux neutrons du reacteur BR-1 jusqu'a 10{sup 15} n/cm{sup 2}, tandis que l'autre type resiste a l'irradiation jusqu'a 10{sup 17} n/cm{sup 2}. Les auteurs indiquent les modifications subies par les caracteristiques, ainsi que le resultat de certaines experiences de recuit. (author) [Spanish] Los autores estan tratando de encontrar semiconductores con los que sea posible medir distribuciones de flujo en reactores de flujo elevado, y con este fin irradiaron uniones p-n del SiC en el reactor BR-1 de Belgica. Irradiaron dos tipos de diodos de SiC de

Simulating the 2012 High Plains Drought Using Three Single Column Models (SCM)

Science.gov (United States)

Medina, I. D.; Baker, I. T.; Denning, S.; Dazlich, D. A.

2015-12-01

The impact of changes in the frequency and severity of drought on fresh water sustainability is a great concern for many regions of the world. One such location is the High Plains, where the local economy is primarily driven by fresh water withdrawals from the Ogallala Aquifer, which accounts for approximately 30% of total irrigation withdrawals from all U.S. aquifers combined. Modeling studies that focus on the feedback mechanisms that control the climate and eco-hydrology during times of drought are limited, and have used conventional General Circulation Models (GCMs) with grid length scales ranging from one hundred to several hundred kilometers. Additionally, these models utilize crude statistical parameterizations of cloud processes for estimating sub-grid fluxes of heat and moisture and have a poor representation of land surface heterogeneity. For this research, we focus on the 2012 High Plains drought and perform numerical simulations using three single column model (SCM) versions of BUGS5 (Colorado State University (CSU) GCM coupled to the Simple Biosphere Model (SiB3)). In the first version of BUGS5, the model is used in its standard bulk setting (single atmospheric column coupled to a single instance of SiB3), secondly, the Super-Parameterized Community Atmospheric Model (SP-CAM), a cloud resolving model (CRM) (CRM consists of 32 atmospheric columns), replaces the single CSU GCM atmospheric parameterization and is coupled to a single instance of SiB3, and for the third version of BUGS5, an instance of SiB3 is coupled to each CRM column of the SP-CAM (32 CRM columns coupled to 32 instances of SiB3). To assess the physical realism of the land-atmosphere feedbacks simulated by all three versions of BUGS5, differences in simulated energy and moisture fluxes are computed between the 2011 and 2012 period and are compared to those calculated using observational data from the AmeriFlux Tower Network for the same period at the ARM Site in Lamont, OK. This research

PEALD grown high-k ZrO{sub 2} thin films on SiC group IV compound semiconductor

Energy Technology Data Exchange (ETDEWEB)

Khairnar, A. G., E-mail: agkhairnar@gmail.com; Patil, V. S.; Agrawal, K. S.; Salunke, R. S.; Mahajan, A. M., E-mail: ammahajan@nmu.ac.in [North Maharashtra University, Department of Electronics, School of Physical Sciences (India)

2017-01-15

The study of ZrO{sub 2} thin films on SiC group IV compound semiconductor has been studied as a high mobility substrates. The ZrO{sub 2} thin films were deposited using the Plasma Enhanced Atomic Layer Deposition System. The thickness of the thin films were measured using ellipsometer and found to be 5.47 nm. The deposited ZrO{sub 2} thin films were post deposition annealed in rapid thermal annealing chamber at temperature of 400°Ð¡. The atomic force microscopy and X-гау photoelectron spectroscopy has been carried out to study the surface topography, roughness and chemical composition of thin film, respectively.

Radiotracer Imaging of Sediment Columns

Science.gov (United States)

Moses, W. W.; O'Neil, J. P.; Boutchko, R.; Nico, P. S.; Druhan, J. L.; Vandehey, N. T.

2010-12-01

Nuclear medical PET and SPECT cameras routinely image radioactivity concentration of gamma ray emitting isotopes (PET - 511 keV; SPECT - 75-300 keV). We have used nuclear medical imaging technology to study contaminant transport in sediment columns. Specifically, we use Tc-99m (T1/2 = 6 h, Eγ = 140 keV) and a SPECT camera to image the bacteria mediated reduction of pertechnetate, [Tc(VII)O4]- + Fe(II) → Tc(IV)O2 + Fe(III). A 45 mL bolus of Tc-99m (32 mCi) labeled sodium pertechnetate was infused into a column (35cm x 10cm Ø) containing uranium-contaminated subsurface sediment from the Rifle, CO site. A flow rate of 1.25 ml/min of artificial groundwater was maintained in the column. Using a GE Millennium VG camera, we imaged the column for 12 hours, acquiring 44 frames. As the microbes in the sediment were inactive, we expected most of the iron to be Fe(III). The images were consistent with this hypothesis, and the Tc-99m pertechnetate acted like a conservative tracer. Virtually no binding of the Tc-99m was observed, and while the bolus of activity propagated fairly uniformly through the column, some inhomogeneity attributed to sediment packing was observed. We expect that after augmentation by acetate, the bacteria will metabolically reduce Fe(III) to Fe(II), leading to significant Tc-99m binding. Imaging sediment columns using nuclear medicine techniques has many attractive features. Trace quantities of the radiolabeled compounds are used (micro- to nano- molar) and the half-lives of many of these tracers are short (Image of Tc-99m distribution in a column containing Rifle sediment at four times.

Aligned metal absorbers and the ultraviolet background at the end of reionization

Science.gov (United States)

Doughty, Caitlin; Finlator, Kristian; Oppenheimer, Benjamin D.; Davé, Romeel; Zackrisson, Erik

2018-04-01

We use observations of spatially aligned C II, C IV, Si II, Si IV, and O I absorbers to probe the slope and intensity of the ultraviolet background (UVB) at z ˜ 6. We accomplish this by comparing observations with predictions from a cosmological hydrodynamic simulation using three trial UVBs applied in post-processing: a spectrally soft, fluctuating UVB calculated using multifrequency radiative transfer; a soft, spatially uniform UVB; and a hard, spatially uniform `quasars-only' model. When considering our paired high-ionization absorbers (C IV/Si IV), the observed statistics strongly prefer the hard, spatially uniform UVB. This echoes recent findings that cosmological simulations generically underproduce strong C IV absorbers at z > 5. A single low/high ionization pair (Si II/Si IV), by contrast, shows a preference for the HM12 UVB, whereas two more (C II/C IV and O I/C IV) show no preference for any of the three UVBs. Despite this, future observations of specific absorbers, particularly Si IV/C IV, with next-generation telescopes probing to lower column densities should yield tighter constraints on the UVB.

Analysis of the High Conversion Efficiencies β-FeSi2 and BaSi2 n-i-p Thin Film Solar Cells

International Nuclear Information System (INIS)

Huang, J.Sh.; Lee, K.W.; Tseng, Y.H.

2014-01-01

Both β-FeSi 2 and BaSi 2 are silicides and have large absorption coefficients; thus they are very promising Si-based new materials for solar cell applications. In this paper, the dc I-V characteristics of n-Si/i-βFeSi 2 /p-Si and n-Si/i-BaSi 2 /p-Si thin film solar cells are investigated by solving the charge transport equations with optical generations. The diffusion current densities of free electron and hole are calculated first. Then the drift current density in the depletion regions is obtained. The total current density is the sum of diffusion and drift current densities. The conversion efficiencies are obtained from the calculated I-V curves. The optimum conversion efficiency of n-Si/i-βFeSi 2 /p-Si thin film solar cell is 27.8% and that of n-Si/i-BaSi 2 /p-Si thin film solar cell is 30.4%, both are larger than that of Si n-i-p solar cell (η is 20.6%). These results are consistent with their absorption spectrum. The calculated conversion efficiency of Si n-i-p solar cell is consistent with the reported researches. Therefore, these calculation results are valid in this work.

Analysis of the High Conversion Efficiencies β-FeSi2 and BaSi2 n-i-p Thin Film Solar Cells

Directory of Open Access Journals (Sweden)

Jung-Sheng Huang

2014-01-01

Full Text Available Both β-FeSi2 and BaSi2 are silicides and have large absorption coefficients; thus they are very promising Si-based new materials for solar cell applications. In this paper, the dc I-V characteristics of n-Si/i-βFeSi2/p-Si and n-Si/i-BaSi2/p-Si thin film solar cells are investigated by solving the charge transport equations with optical generations. The diffusion current densities of free electron and hole are calculated first. Then the drift current density in the depletion regions is obtained. The total current density is the sum of diffusion and drift current densities. The conversion efficiencies are obtained from the calculated I-V curves. The optimum conversion efficiency of n-Si/i-βFeSi2/p-Si thin film solar cell is 27.8% and that of n-Si/i-BaSi2/p-Si thin film solar cell is 30.4%, both are larger than that of Si n-i-p solar cell (η is 20.6%. These results are consistent with their absorption spectrum. The calculated conversion efficiency of Si n-i-p solar cell is consistent with the reported researches. Therefore, these calculation results are valid in this work.

PREVENTION OF SPINAL DISORDERS IN CHILDRENI- IV GRADE

Directory of Open Access Journals (Sweden)

Dejаn Gojković

2012-09-01

Full Text Available Problem physical activities children younger school-age children, with the basic tasks research is construction kinesitherapy adequate prevention and avoid postural disorders spinal column, optimal ontogenetic level morphological( anthropological development.The main objective research is contents teaching physical education as well as and content that can be put in regular program teaching physical education with the basic task prevention potential and eliminate disorders spinal column, with auxiliary a harmonious biological development. The entities from which he was carried out sample size for this research is defined as population students male primary schools I- IV grade.The first and basic condition was that they are included in teaching physical education in the course of this research sample is taked 400 respondents.-according to the manner elections respondents sample was targeted selected.were taken I- IV grade elementary schools in Bijeljina, Teslic, Foca and Pale.

Time over threshold readout method of SiPM based small animal PET detector

International Nuclear Information System (INIS)

Valastyan, I.; Gal, J.; Hegyesi, G.; Kalinka, G.; Nagy, F.; Kiraly, B.; Imrek, J.; Molnar, J.

2012-01-01

Complete text of publication follows. The aim of the work was to design a readout concept for silicon photomultiplier (SiPM) sensor array used in small animal PET scanner. The detector module consist of LYSO 35x35 scintillation crystals, 324 SiPM sensors (arranged in 2x2 blocks and those quads in a 9x9 configuration) and FPGA based readout electronics. The dimensions of the SiPM matrix are area: 48x48 mm 2 and the size of one SiPM sensor is 1.95x2.2 mm 2 . Due to the high dark current of the SiPM, conventional Anger based readout method does not provide sufficient crystal position maps. Digitizing the 324 SiPM channels is a straightforward way to obtain proper crystal position maps. However handling hundreds of analogue input channels and the required DSP resources cause large racks of data acquisition electronics. Therefore coding of the readout channels is required. Proposed readout method: The coding of the 324 SiPMs consists two steps: Step 1) Reduction of the channels from 324 to 36: Row column readout, SiPMs are connected to each other in column by column and row-by row, thus the required channels are 36. The dark current of 18 connected SiPMs is small in off for identifying pulses coming from scintillating events. Step 2) Reduction of the 18 rows and columns to 4 channels: Comparators were connected to each rows and columns, and the level was set above the level of dark noise. Therefore only few comparators are active when scintillation light enters in the tile. The output of the comparator rows and columns are divided to two parts using resistor chains. Then the outputs of the resistor chains are digitized by a 4 channel ADC. However instead of the Anger method, time over threshold (ToT) was used. Figure 1 shows the readout concept of the SiPM matrix. In order to validate the new method and optimize the front-end electronics of the detector, the analogue signals were digitized before the comparators using a CAEN DT5740 32 channel digitizer, then the

Adsorption recovery of thorium(IV) by Myrica rubra tannin and larch tannin immobilized onto collagen fibres

International Nuclear Information System (INIS)

Xuepin Liao; Li Li; Bi Shi

2004-01-01

Novel adsorbents which can concentrate Th(IV) in aqueous solution were prepared by immobilizing Myrica rubra tannin and larch tannin onto collagen fibre matrices. The adsorption capacities of the immobilized tannins to Th(IV) are related to temperature and pH value of the adsorption process. For example, when the initial concentration of Th(IV) was 116.0 mg x l -1 and the immobilized tannin was 100 mg, the adsorption capacities of immobilized Myrica rubra tannin and larch tannin were 55.98 mg Th(IV) x g -1 and 13.19 mg Th(IV) x g -1 , respectively at 303 K, and 73.67 mg Th(IV) x g -1 and 18.19 mg Th(IV) x g -1 at 323 K. It was also found that the higher adsorption capacity was obtained at higher pH value. The adsorption equilibrium data of the immobilized tannins for Th(IV) can be well fitted by the Langmuir model and the mechanism of the adsorption was found to be a chemical adsorption. In general, the adsorption capacity of immobilized Myrica rubra tannin to Th(IV) is significantly higher than that of immobilized larch tannin, probably due to the fact that the B ring of Myrica rubra tannin has a pyrogallol structure which has higher reaction activity with metal ions. The breakthrough point of the adsorption column of immobilized Myrica rubra tannin was at 33 bed volumes for the experimental system. The mass transfer coefficient of adsorption column determined by Adams-Bohart equation was 1.61 x 10 -4 l x mg -1 x min -1 . The adsorption column can be easily regenerated by 0.1 mol x l -1 HNO 3 solution, showing outstanding ability of concentrating Th(IV). (author)

Silicon electrodeposition from chloride-fluoride melts containing K2SiF6 and SiO2

Directory of Open Access Journals (Sweden)

Zhuk Sergey I.

2017-01-01

Full Text Available Silicon electrodeposition on glassy carbon from the KF-KCl-K2SiF6, KF-KCl-K2SiF6-KOH and KF-KCl-K2SiF6-SiO2 melts was studied by the cyclic voltammetry. Тhe electroreduction of Si(IV to metallic Si was observed as a single 4-electron wave under all considered conditions. The reactions of cathode reduction of silicon from fluoride and oxyfluoride complexes were suggested. It was shown that the process can be controlled by the preliminary transformation of SiO44- to SiF62- and SiOxFyz-. The influence of the current density on structure and morphology of silicon deposits obtained during galvanostatic electrolysis of the KF-KCl-K2SiF6-SiO2 melt was studied.

Oxidation protection of multilayer CVD SiC/B/SiC coatings for 3D C/SiC composite

International Nuclear Information System (INIS)

Liu Yongsheng; Cheng Laifei; Zhang Litong; Wu Shoujun; Li Duo; Xu Yongdong

2007-01-01

A CVD boron coating was introduced between two CVD SiC coating layers. EDS and XRD results showed that the CVD B coating was a boron crystal without other impurity elements. SEM results indicated that the CVD B coating was a flake-like or column-like crystal with a compact cross-section. The crack width in the CVD SiC coating deposited on CVD B is smaller than that in a CVD SiC coating deposited on CVD SiC coating. After oxidation at 700 deg. C and 1000 deg. C, XRD results indicated that the coating was covered by product B 2 O 3 or B 2 O 3 .xSiO 2 film. The cracks were sealed as observed by SEM. There was a large amount of flake-like material on hybrid coating surface after oxidation at 1300 deg. C. Oxidation weight loss and residual flexural strength results showed that hybrid SiC/B/SiC multilayer coating provided better oxidation protection for C/SiC composite than a three layer CVD SiC coating at temperatures from 700 deg. C to 1000 deg. C for 600 min, but worse oxidation protection above 1000 deg. C due to the large amount of volatilization of B 2 O 3 or B 2 O 3 .xSiO 2

Some reactions of hydrotris(3,5-dimethylpyrazolyl)-borato trichloroactinides(IV), MCl/sub 3/(HBL/sub 3/). THF (M=Th/sup IV/, U/sup IV/; L=3,5-dimethylpyrazolyl, THF=tetrahydrofuran)

Energy Technology Data Exchange (ETDEWEB)

Marcalo, J; Marques, N; Pires de Matos, A; Bagnall, K W

1986-08-01

The thorium(IV) and uranium(IV) compounds MCl/sub 2/(Cp)(HBL/sub 3/) (Cp=eta/sup 5/-C/sub 5/H/sub 5/), MCl/sub 2/(N(SiMe/sub 3/)/sub 2/)(HBL/sub 3/) and M(NPh/sub 2/)/sub 3/(HBL/sub 3/) have been prepared from MCl/sub 3/(HBL/sub 3/).THF. IR, near-IR-visible, /sup 1/H NMR and /sup 11/B NMR spectra are reported for these compounds.

Chemoselective Hydrogenation with Supported Organoplatinum(IV) Catalyst on Zn(II)-Modified Silica

Energy Technology Data Exchange (ETDEWEB)

Camacho-Bunquin, Jeffrey [Chemical Sciences and Engineering Division, Argonne National Laboratory, 9700 S Cass Avenue, Lemont, Illinois 60439, United States; Ferrandon, Magali [Chemical Sciences and Engineering Division, Argonne National Laboratory, 9700 S Cass Avenue, Lemont, Illinois 60439, United States; Sohn, Hyuntae [Chemical Sciences and Engineering Division, Argonne National Laboratory, 9700 S Cass Avenue, Lemont, Illinois 60439, United States; Yang, Dali [Chemical Sciences and Engineering Division, Argonne National Laboratory, 9700 S Cass Avenue, Lemont, Illinois 60439, United States; Liu, Cong [Chemical Sciences and Engineering Division, Argonne National Laboratory, 9700 S Cass Avenue, Lemont, Illinois 60439, United States; Ignacio-de Leon, Patricia Anne [Energy Sciences Division, Argonne National Laboratory, 9700 S Cass Avenue, Lemont, Illinois 60439, United States; Perras, Frédéric A. [Ames Laboratory, U.S. Department of Energy, Ames, Iowa 50010, United States; Pruski, Marek [Ames Laboratory, U.S. Department of Energy, Ames, Iowa 50010, United States; Department of Chemistry, Iowa State University, 2416 Pammel Drive, Ames, Iowa 50011, United States; Stair, Peter C. [Chemical Sciences and Engineering Division, Argonne National Laboratory, 9700 S Cass Avenue, Lemont, Illinois 60439, United States; Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, United States; Delferro, Massimiliano [Chemical Sciences and Engineering Division, Argonne National Laboratory, 9700 S Cass Avenue, Lemont, Illinois 60439, United States

2018-02-22

Well-defined organoplatinum(IV) sites were grafted on a Zn(II)-modified SiO2 support via surface organometallic chemistry in toluene at room temperature. Solid-state spectroscopies including XAS, DRIFTS, DRUV-Vis, and solid-state (SS)NMR enhanced by dynamic nuclear polarization (DNP), as well as TPR-H2 and TEM techniques revealed highly dispersed (methylcyclopentadi-enyl)methylplatinum(IV) sites on the surface ((MeCp)PtMe/Zn/SiO2, 1). In addition, computational modelling suggests that the surface reaction of (MeCp)PtMe3 with Zn(II)-modified SiO2 support is thermodynamically favorable (ΔG = -12.4 kcal/mol), likely due to the increased acidity of the hydroxyl group, as confirmed by NH3-TPD and DNP-enhanced 17O{1H} SSNMR. In situ DRIFTS and XAS hydrogenation experiments reveal the formation of a surface Pt(IV)-H upon hydrogenolysis of Pt-Me groups. The heterogenized organoplatinum(IV)-H sites catalyze the selective partial hydrogenation of 1,3-butadiene to butenes (up to 95%) and the reduction of nitrobenzene derivatives to anilines (up to 100%) with excellent tolerance of reduction-sensitive func-tional groups (olefin, carbonyl, nitrile, halogens) under mild reaction conditions.

Gamma Ray Absorption Technique For Scannig Process Column In Up-IV Pertamina Cilacap

International Nuclear Information System (INIS)

Santoso, Sigit Budi; Kushartono; Bisana; Mulyanto, Eko; Adi, Soecipto

2000-01-01

A demonstration using gamma ray absorption technique was carried out to diagnose malfunction such as tray missing, flooding, and weeping occurred in 2 3C-5 Extraction Vacuum Flash Strip Tower . The scan was conducted from the bottom until the top of the orientation of the director-source are (122 o -308 o ) dan (122 o - 270 o ). The results indicate that the tray number 1 and 3 were missing while weeping occurred in the space between tray 4,5,6,and 7. The results show that this technique can be used to diagnose malfunction occurred in the column on-line so it can help maintenance personnel in planning, the time scheduled and spare part for shutdown. Beside of that this technique can be developed to help column personnel's in adjusting the operation parameter to achieve optimum operation

Bubble column and CFD simulation for chemical recycling of polyethylene terephthalate

Science.gov (United States)

Alzuhairi, Mohammed

2018-05-01

Computational Fluid Dynamics (CFD) is an important simulation tool, which uses powerful computer to get optimal design in industrial processes. New approach technique of bubble column for three phases has been used with respect to chemical recycling of Polyethylene Terephthalate (PET). The porous ceramic has been used in thin plate (5 mm) with a narrow pore size distribution. Excellent agreement between CFD has been predicted and experimental profiles of hold-up and velocity close to wall have been observed for a column diameter 0.08 m, column height 0.15 m (HD), and superficial gas velocity (VG) 0.05 m/s. The main purpose of the current study is to highlight depolymerization of PET chemically by using the close system of Ethylene Glycol, PET-Catalyzed, and Nitrogen glycolysis process in bubble column of three phases technique by using Nano catalyst, SiO2 with various weight percent (0.01, 0.02, 0.05, 0.1, 0.2, and 0.5) based on PET weight and preheated Nitrogen up to 100° C by extra heater in bubble column reactor. The depolymerization time could be reduced in order to improve heat and mass transfer in comparison with the traditional methods. Little amount not exceeding 0.01% of Nano SiO2 is enough for completing depolymerization. The final product of PET depolymerization has full characterization by FTIR, AFM, CHN tests and has been used as a vital additive for Bitumen, it has been investigated as a moisture-proof, water seepage-proof material, and as a tough resistant to environmental conditions.

Improving the Amazonian Hydrologic Cycle in a Coupled Land-Atmosphere, Single Column Model

Science.gov (United States)

Harper, A. B.; Denning, S.; Baker, I.; Prihodko, L.; Branson, M.

2006-12-01

We have coupled a land-surface model, the Simple Biosphere Model (SiB3), to a single column of the Colorado State University General Circulation Model (CSU-GCM) in the Amazon River Basin. This is a preliminary step in the broader goal of improved simulation of Basin-wide hydrology. A previous version of the coupled model (SiB2) showed drought and catastrophic dieback of the Amazon rain forest. SiB3 includes updated soil hydrology and root physiology. Our test area for the coupled single column model is near Santarem, Brazil, where measurements from the km 83 flux tower in the Tapajos National Forest can be used to evaluate model output. The model was run for 2001 using NCEP2 Reanalysis as driver data. Preliminary results show that the updated biosphere model coupled to the GCM produces improved simulations of the seasonal cycle of surface water balance and precipitation. Comparisons of the diurnal and seasonal cycles of surface fluxes are also being made.

Grain boundary layer behavior in ZnO/Si heterostructure

International Nuclear Information System (INIS)

Liu Bingce; Liu Cihui; Yi Bo

2010-01-01

The grain boundary layer behavior in ZnO/Si heterostucture is investigated. The current-voltage (I-V) curves, deep level transient spectra (DLTS) and capacitance-voltage (C-V) curves are measured. The transport currents of ZnO/Si heterojunction are dominated by grain boundary layer as high densities of interfacial states existed. The interesting phenomenon that the crossing of In I-V curves of ZnO/Si heterojunction at various measurement temperatures and the decrease of its effective barrier height with the decrement of temperature are in contradiction with the ideal heterojunction thermal emission model is observed. The details will be discussed in the following. (semiconductor physics)

Peroxiredoxin IV Protects Cells From Radiation-Induced Apoptosis in Head-and-Neck Squamous Cell Carcinoma

International Nuclear Information System (INIS)

Park, Jung Je; Chang, Hyo Won; Jeong, Eun-Jeong; Roh, Jong-Lyel; Choi, Seung-Ho; Jeon, Sea-Yuong; Ko, Gyung Hyuck; Kim, Sang Yoon

2009-01-01

Purpose: Human peroxiredoxins (Prxs) are known as a family of thiol-specific antioxidant enzymes, among which Prx-I and -II play an important role in protecting cells from irradiation-induced cell death. It is not known whether Prx-IV also protects cells from ionizing radiation (IR). Methods and Materials: To evaluate the protective role of Prx-IV in IR, we transfected full-length Prx-IV cDNA into AMC-HN3 cells, which weakly express endogenous Prx-IV, and knocked down the expression of Prx-IV with siRNA methods using AMC-HN7 cells, which express high levels of endogenous Prx-IV. Radiosensitivity profiles in these cells were evaluated using clonogenic assay, FACS analysis, cell viability, and TUNEL assay. Results: Three Prx-IV expressing clones were isolated. Prx-IV regulated intracellular reactive oxygen species (ROS) levels and made cells more resistant to IR-induced apoptosis. Furthermore, the knockdown of Prx-IV with siRNA made cells more sensitive to IR-induced apoptosis. Conclusion: The results of these studies suggest that Prx-IV may play an important role in protecting cells from IR-induced apoptosis in head-and-neck squamous cell carcinoma

Growth kinetics and mass transport mechanisms of GaN columns by selective area metal organic vapor phase epitaxy

Science.gov (United States)

Wang, Xue; Hartmann, Jana; Mandl, Martin; Sadat Mohajerani, Matin; Wehmann, Hergo-H.; Strassburg, Martin; Waag, Andreas

2014-04-01

Three-dimensional GaN columns recently have attracted a lot of attention as the potential basis for core-shell light emitting diodes for future solid state lighting. In this study, the fundamental insights into growth kinetics and mass transport mechanisms of N-polar GaN columns during selective area metal organic vapor phase epitaxy on patterned SiOx/sapphire templates are systematically investigated using various pitch of apertures, growth time, and silane flow. Species impingement fluxes on the top surface of columns Jtop and on their sidewall Jsw, as well as, the diffusion flux from the substrate Jsub contribute to the growth of the GaN columns. The vertical and lateral growth rates devoted by Jtop, Jsw and Jsub are estimated quantitatively. The diffusion length of species on the SiOx mask surface λsub as well as on the sidewall surfaces of the 3D columns λsw are determined. The influences of silane on the growth kinetics are discussed. A growth model is developed for this selective area metal organic vapor phase epitaxy processing.

Column-to-column packing variation of disposable pre-packed columns for protein chromatography.

Science.gov (United States)

Schweiger, Susanne; Hinterberger, Stephan; Jungbauer, Alois

2017-12-08

In the biopharmaceutical industry, pre-packed columns are the standard for process development, but they must be qualified before use in experimental studies to confirm the required performance of the packed bed. Column qualification is commonly done by pulse response experiments and depends highly on the experimental testing conditions. Additionally, the peak analysis method, the variation in the 3D packing structure of the bed, and the measurement precision of the workstation influence the outcome of qualification runs. While a full body of literature on these factors is available for HPLC columns, no comparable studies exist for preparative columns for protein chromatography. We quantified the influence of these parameters for commercially available pre-packed and self-packed columns of disposable and non-disposable design. Pulse response experiments were performed on 105 preparative chromatography columns with volumes of 0.2-20ml. The analyte acetone was studied at six different superficial velocities (30, 60, 100, 150, 250 and 500cm/h). The column-to-column packing variation between disposable pre-packed columns of different diameter-length combinations varied by 10-15%, which was acceptable for the intended use. The column-to-column variation cannot be explained by the packing density, but is interpreted as a difference in particle arrangement in the column. Since it was possible to determine differences in the column-to-column performance, we concluded that the columns were well-packed. The measurement precision of the chromatography workstation was independent of the column volume and was in a range of±0.01ml for the first peak moment and±0.007 ml 2 for the second moment. The measurement precision must be considered for small columns in the range of 2ml or less. The efficiency of disposable pre-packed columns was equal or better than that of self-packed columns. Copyright © 2017 The Author(s). Published by Elsevier B.V. All rights reserved.

Simulating the 2012 High Plains drought using three single column versions (SCM) of BUGS5

Science.gov (United States)

Medina, I. D.; Denning, S.

2013-12-01

The impact of changes in the frequency and severity of drought on fresh water sustainability is a great concern for many regions of the world. One such location is the High Plains, where the local economy is primarily driven by fresh water withdrawals from the Ogallala Aquifer, which accounts for approximately 30% of total irrigation withdrawals from all U.S. aquifers combined. Modeling studies that focus on the feedback mechanisms that control the climate and eco-hydrology during times of drought are limited, and have used conventional General Circulation Models (GCMs) with grid length scales ranging from one hundred to several hundred kilometers. Additionally, these models utilize crude statistical parameterizations of cloud processes for estimating sub-grid fluxes of heat and moisture and have a poor representation of land surface heterogeneity. For this research, we will focus on the 2012 High Plains drought and will perform numerical simulations using three single column versions (SCM) of BUGS5 (Colorado State University (CSU) GCM coupled to the Simple Biosphere Model (SiB3)) at multiple sites overlying the Ogallala Aquifer for the 2011-2012 periods. In the first version of BUGS5, the model will be used in its standard bulk setting (single atmospheric column coupled to a single instance of SiB3), secondly, the Super-Parameterized Community Atmospheric Model (SP-CAM), a cloud resolving model (CRM consists of 64 atmospheric columns), will replace the single CSU GCM atmospheric parameterization and will be coupled to a single instance of SiB3, and for the third version of BUGS5, an instance of SiB3 will be coupled to each CRM column of the SP-CAM (64 CRM columns coupled to 64 instances of SiB3). To assess the physical realism of the land-atmosphere feedbacks simulated at each site by all versions of BUGS5, differences in simulated energy and moisture fluxes will be computed between the 2011 and 2012 period and will be compared to differences calculated using

Chromatographic studies of thorium(IV) and its extraction from monazite sand

International Nuclear Information System (INIS)

Bandyopadhyay, Arup; Roy, Uday Sankar

1998-01-01

A simple, rapid and selective method has been developed for reversed phase extraction chromatographic studies of Th IV with high molecular mass monocarboxylic acid (C 15 -C 16 ), SRS-100 as a stationary phase on a column of silica gel. Quantitative extraction of Th IV has been achieved in the pH range 4.8-5.5. The extracted Th IV has been stripped with 1:1 (v/v) mixture of 0.2 M HNO 3 and 0.2 M NaNO 3 and estimated spectrophotometrically. The effect of variables as pH, stripping agents, flow rate on extraction and elution have been studied. Th IV has been separated from various commonly associated elements in binary and synthetic multicomponent mixtures. The method has been applied successfully for the extraction of thorium from monazite sand. (author)

Calculated Resonance Line Profiles of [Mg II], [C II], and [Si IV] in the Solar Atmosphere

Science.gov (United States)

Avrett, E.; Landi, E.; McKillop, S.

2013-12-01

NASA's Interface Region Imaging Spectrograph space mission, launched 2013 June 27, is intended to study the structure of the solar chromosphere and the transition region between the chromosphere and corona. The spectral lines to be observed include the Mg II k line at 2796.5 Å, the C II 1334.5 Å line, and the Si IV line at 1393.8 Å, which are formed in the middle chromosphere, the upper chromosphere, and the lower transition region, respectively. Here we calculate the profiles of these lines from four models of the solar atmosphere, intended to represent the faint and mean internetwork, a network lane, and bright network. We show how the profiles change from the center of the solar disk toward the limb of the Sun and in response to outflows and inflows. These results are intended to cover the range of expected quiet-Sun observations and assist in their interpretation. We expect that the observations will lead to improvements in the models, which can then be used to estimate the required non-radiative heating in the different regions.

Calculated resonance line profiles of [Mg II], [C II], and [Si IV] in the solar atmosphere

International Nuclear Information System (INIS)

Avrett, E.; McKillop, S.; Landi, E.

2013-01-01

NASA's Interface Region Imaging Spectrograph space mission, launched 2013 June 27, is intended to study the structure of the solar chromosphere and the transition region between the chromosphere and corona. The spectral lines to be observed include the Mg II k line at 2796.5 Å, the C II 1334.5 Å line, and the Si IV line at 1393.8 Å, which are formed in the middle chromosphere, the upper chromosphere, and the lower transition region, respectively. Here we calculate the profiles of these lines from four models of the solar atmosphere, intended to represent the faint and mean internetwork, a network lane, and bright network. We show how the profiles change from the center of the solar disk toward the limb of the Sun and in response to outflows and inflows. These results are intended to cover the range of expected quiet-Sun observations and assist in their interpretation. We expect that the observations will lead to improvements in the models, which can then be used to estimate the required non-radiative heating in the different regions.

Phenomenological inelastic constitutive equations for SiC and SiC fibers under irradiation

International Nuclear Information System (INIS)

El-Azab, A.; Ghoniem, N.M.

1994-01-01

Experimental data on irradiation-induced dimensional changes and creep in β-SiC and SiC fibers is analyzed, with the objective of studying the constitutive behavior of these materials under high-temperature irradiation. The data analysis includes empirical representation of irradiation-induced dimensional changes in SiC matrix and SiC fibers as function of time and irradiation temperature. The analysis also includes formulation of simple scaling laws to extrapolate the existing data to fusion conditions on the basis of the physical mechanisms of radiation effects on crystalline solids. Inelastic constitutive equations are then developed for SCS-6 SiC fibers, Nicalon fibers and CVD SiC. The effects of applied stress, temperature, and irradiation fields on the deformation behavior of this class of materials are simultaneously represented. Numerical results are presented for the relevant creep functions under the conditions of the fusion reactor (ARIES IV) first wall. The developed equations can be used in estimating the macro mechanical properties of SiC-SiC composite systems as well as in performing time-dependent micro mechanical analysis that is relevant to slow crack growth and fiber pull-out under fusion conditions

Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures

International Nuclear Information System (INIS)

Varzgar, John B.; Kanoun, Mehdi; Uppal, Suresh; Chattopadhyay, Sanatan; Tsang, Yuk Lun; Escobedo-Cousins, Enrique; Olsen, Sarah H.; O'Neill, Anthony; Hellstroem, Per-Erik; Edholm, Jonas; Ostling, Mikael; Lyutovich, Klara; Oehme, Michael; Kasper, Erich

2006-01-01

The reliability of gate oxides on bulk Si and strained Si (s-Si) has been evaluated using constant voltage stressing (CVS) to investigate their breakdown characteristics. The s-Si architectures exhibit a shorter life time compared to that of bulk Si, which is attributed to higher bulk oxide charges (Q ox ) and increased surface roughness in the s-Si structures. The gate oxide in the s-Si structure exhibits a hard breakdown (HBD) at 1.9 x 10 4 s, whereas HBD is not observed in bulk Si up to a measurement period of 1.44 x 10 5 s. The shorter lifetime of the s-Si gate oxide is attributed to a larger injected charge (Q inj ) compared to Q inj in bulk Si. Current-voltage (I-V) measurements for bulk Si samples at different stress intervals show an increase in stress induced leakage current (SILC) of two orders in the low voltage regime from zero stress time to up to 5 x 10 4 s. In contrast, superior performance enhancements in terms of drain current, maximum transconductance and effective channel mobility are observed in s-Si MOSFET devices compared to bulk Si. The results from this study indicate that further improvement in gate oxide reliability is needed to exploit the sustained performance enhancement of s-Si devices over bulk Si

Design of Mixed Batch Reactor and Column Studies at Oak Ridge National Laboratory

International Nuclear Information System (INIS)

Wu, Weimin; Criddle, Craig S.

2015-01-01

We (the Stanford research team) were invited as external collaborators to contribute expertise in environmental engineering and field research at the ORNL IFRC, Oak Ridge, TN, for projects carried out at the Argonne National Laboratory and funded by US DOE. Specifically, we assisted in the design of batch and column reactors using ORNL IFRC materials to ensure the experiments were relevant to field conditions. During the funded research period, we characterized ORNL IFRC groundwater and sediments in batch microcosm and column experiments conducted at ANL, and we communicated with ANL team members through email and conference calls and face-to-face meetings at the annual ERSP PI meeting and national meetings. Microcosm test results demonstrated that U(VI) in sediments was reduced to U(IV) when amended with ethanol. The reduced products were not uraninite but unknown U(IV) complexes associated with Fe. Fe(III) in solid phase was only partially reduced. Due to budget reductions at ANL, Stanford contributions ended in 2011.

Design of Mixed Batch Reactor and Column Studies at Oak Ridge National Laboratory

Energy Technology Data Exchange (ETDEWEB)

Wu, Weimin [Stanford Univ., CA (United States); Criddle, Craig S. [Stanford Univ., CA (United States)

2015-11-16

We (the Stanford research team) were invited as external collaborators to contribute expertise in environmental engineering and field research at the ORNL IFRC, Oak Ridge, TN, for projects carried out at the Argonne National Laboratory and funded by US DOE. Specifically, we assisted in the design of batch and column reactors using ORNL IFRC materials to ensure the experiments were relevant to field conditions. During the funded research period, we characterized ORNL IFRC groundwater and sediments in batch microcosm and column experiments conducted at ANL, and we communicated with ANL team members through email and conference calls and face-to-face meetings at the annual ERSP PI meeting and national meetings. Microcosm test results demonstrated that U(VI) in sediments was reduced to U(IV) when amended with ethanol. The reduced products were not uraninite but unknown U(IV) complexes associated with Fe. Fe(III) in solid phase was only partially reduced. Due to budget reductions at ANL, Stanford contributions ended in 2011.

A CMOS ASIC Design for SiPM Arrays.

Science.gov (United States)

Dey, Samrat; Banks, Lushon; Chen, Shaw-Pin; Xu, Wenbin; Lewellen, Thomas K; Miyaoka, Robert S; Rudell, Jacques C

2011-12-01

Our lab has previously reported on novel board-level readout electronics for an 8×8 silicon photomultiplier (SiPM) array featuring row/column summation technique to reduce the hardware requirements for signal processing. We are taking the next step by implementing a monolithic CMOS chip which is based on the row-column architecture. In addition, this paper explores the option of using diagonal summation as well as calibration to compensate for temperature and process variations. Further description of a timing pickoff signal which aligns all of the positioning (spatial channels) pulses in the array is described. The ASIC design is targeted to be scalable with the detector size and flexible to accommodate detectors from different vendors. This paper focuses on circuit implementation issues associated with the design of the ASIC to interface our Phase II MiCES FPGA board with a SiPM array. Moreover, a discussion is provided for strategies to eventually integrate all the analog and mixed-signal electronics with the SiPM, on either a single-silicon substrate or multi-chip module (MCM).

Resistive switching behavior of SiOx layers with Si nanoparticles

International Nuclear Information System (INIS)

Nesheva, D; Pantchev, B; Manolov, E; Dzhurkov, V; Nedev, N; Valdez, B; Nedev, R

2017-01-01

First results on resistive switching in SiO x film containing crystalline silicon nanoparticles are reported. SiO x layers ( x = 1.15) with thickness of 50 nm were deposited on n-Si crystalline substrates and annealed for 60 min at 1000 o C to grow crystalline nanoparticles. Part of the samples were annealed in an inert atmosphere, while the rest were subjected to a two-step (O 2 +N 2 /N 2 ) annealing process. Current-voltage (I-V) characteristics were by applying positive or negative voltage to the top contact. For both types of samples the I-V characteristics were asymmetric with lower currents measured at negative voltage, especially in the case of two-step annealed samples. In most of the N 2 annealed structures switching behavior high-low/low-high resistance state was observed in both polarities at voltages with amplitudes in the range (2 - 4) V. Uncontrolled switching low/high resistance was also seen, more frequently at positive voltages. In contrast, the two-step annealed samples showed stable behavior. The transition high-low resistance state was achieved by negative voltages in the (-2, -5) V range leading to an increase of the current by more than three orders of magnitude. The structures were reset to the high resistive state, by positive voltage in the range (3 - 4) V. Uncontrolled switching was not observed in the two-step annealed samples for both polarities and they showed higher reliability regarding the number of switching cycles. (paper)

Study of plutonium sorption in aluminia column in the system HNO3-HF

International Nuclear Information System (INIS)

Araujo, J.A. de.

1977-01-01

The column chromatographic method using alumina has been applied successfully to study the sorption-desorption behavior of plutonium traces in HNO 3 -HF and HNO 3 -HF-UO 2 (NO 3 ) 2 systems, aiming to elaborate a process for recovering plutonium traces from reprocessing wastes, mainly in existing solutions where uranium is presented in macro quantities. Basically, the method consists in the sorption of plutonium by percolating a solution containing HNO 3 (0,1 to 0,8M) or uranyl nitrate (1-50 gU/l) and HF(0,1 to 0,3M) through an Al 2 O 3 collumn. The plutonium is fixed on Al 2 O 3 whereas the uranyl ions is collected in the efluent. The adsorption of Pu-III, Pu-IV and Pu-VI in the presence of HF was determined and Pu-IV can be almost completely sorbed. The Pu-IV is eluted by reduction to Pu-III in the column using 3 M HNO 3 -0,005M FeSO 4 at 50 0 C as elutrient. This method is very simple and can be applied for separation and purification of plutonium (traces) from uranyl nitrate or others coming solutions from wet chemistry of irradiated fuels [pt

In situ observation of mechanical damage within a SiC-SiC ceramic matrix composite

Energy Technology Data Exchange (ETDEWEB)

Saucedo-Mora, L. [Institute Eduardo Torroja for Construction Sciences-CSIC, Madrid (Spain); Department of Materials, University of Oxford (United Kingdom); Lowe, T. [Manchester X-ray Imaging Facility, The University of Manchester (United Kingdom); Zhao, S. [Department of Materials, University of Oxford (United Kingdom); Lee, P.D. [Research Complex at Harwell, Rutherford Appleton Laboratory (United Kingdom); Mummery, P.M. [School of Mechanical, Aerospace and Civil Engineering, The University of Manchester (United Kingdom); Marrow, T.J., E-mail: james.marrow@materials.ox.ac.uk [Department of Materials, University of Oxford (United Kingdom)

2016-12-01

SiC-SiC ceramic matrix composites are candidate materials for fuel cladding in Generation IV nuclear fission reactors and as accident tolerant fuel clad in current generation plant. Experimental methods are needed that can detect and quantify the development of mechanical damage, to support modelling and qualification tests for these critical components. In situ observations of damage development have been obtained of tensile and C-ring mechanical test specimens of a braided nuclear grade SiC-SiC ceramic composite tube, using a combination of ex situ and in situ computed X-ray tomography observation and digital volume correlation analysis. The gradual development of damage by matrix cracking and also the influence of non-uniform loading are examined. - Highlights: • X-ray tomography with digital volume correlation measures 3D deformation in situ. • Cracking and damage in the microstructure can be detected using the strain field. • Fracture can initiate from the monolithic coating of a SiC-SiC ceramic composite.

In situ observation of mechanical damage within a SiC-SiC ceramic matrix composite

International Nuclear Information System (INIS)

Saucedo-Mora, L.; Lowe, T.; Zhao, S.; Lee, P.D.; Mummery, P.M.; Marrow, T.J.

2016-01-01

SiC-SiC ceramic matrix composites are candidate materials for fuel cladding in Generation IV nuclear fission reactors and as accident tolerant fuel clad in current generation plant. Experimental methods are needed that can detect and quantify the development of mechanical damage, to support modelling and qualification tests for these critical components. In situ observations of damage development have been obtained of tensile and C-ring mechanical test specimens of a braided nuclear grade SiC-SiC ceramic composite tube, using a combination of ex situ and in situ computed X-ray tomography observation and digital volume correlation analysis. The gradual development of damage by matrix cracking and also the influence of non-uniform loading are examined. - Highlights: • X-ray tomography with digital volume correlation measures 3D deformation in situ. • Cracking and damage in the microstructure can be detected using the strain field. • Fracture can initiate from the monolithic coating of a SiC-SiC ceramic composite.

JGOFS IV. Subproject: natural radionuclides as tracers for particle dynamics in the water column. Final report

International Nuclear Information System (INIS)

Scholten, J.C.; Fietzke, J.; Mangini, A.; Stoffers, P.

2000-01-01

As part of the German JOINT GLOBAL OCEAN FLUX STUDY (JGOFS) the aim of the project was to investigate the particle dynamics in the water column, especially to estimate the trapping efficiencies of sediment traps deployed in the eastern North Atlantic (L1: 33 N 21 W; L2: 47 N 19.5 W; L3: 54,4 N 21,1 W; ESTOC: 29,07 N 15,25 W; OMEX: 49 N 12,5 W). This investigation was based on measurements of the distribution of natural radionuclides in the water column and in sediment traps. In the upper water column (≤1000 m) the 230 Th concentrations are similar at all locations investigated and a reversible scavenging model was able to describe the 230 Th distribution. In the deep water-column at L2 and L3 the 230 Th concentrations were significantly lower than predicted from the reversible scavenging model. The 230 Th concentrations here could be described by a scavenging-mixing model which assumes an advection of 230 Th depleted water masses and a rapid ventilation between 3 and 25 years. Based on two models, a mass balance for 230 Th and 231 Pa and a constant removal model, sediment trap efficiencies were calculated to be between 9% and 143%. The lowest efficiencies (9%-36%) were determined in the 500 m and 1000 m traps and no direct relation between water currents velocities and trapping biases were observed. The correction for trapping biases were found to be important for the understanding of the regional differences in the particle flux in the eastern north Atlantic. (orig.) [de

Diaquatetrabromidotin(IV trihydrate

Directory of Open Access Journals (Sweden)

Fei Ye

2012-09-01

Full Text Available The title compound, [SnBr4(H2O2]·3H2O, forms large colourless crystals in originally sealed samples of tin tetrabromide. It constitutes the first structurally characterized hydrate of SnBr4 and is isostructural with the corresponding hydrate of SnCl4. It is composed of SnIV atoms octahedrally coordinated by four Br atoms and two cis-related water molecules. The octahedra exhibit site symmetry 2. They are arranged into columns along [001] via medium–strong O—H...O hydrogen bonds involving the two lattice water molecules (one situated on a twofold rotation axis while the chains are interconnected via longer O—H...Br hydrogen bonds, forming a three-dimensional network.

HIGH-REDSHIFT METALS. I. THE DECLINE OF C IV AT z > 5.3

International Nuclear Information System (INIS)

Becker, George D.; Rauch, Michael; Sargent, Wallace L. W.

2009-01-01

We present the results from our search for C IV absorption systems at redshifts z = 5.3-6.0. We have observed four z ∼ 6 QSOs with Keck/NIRSPEC in echelle mode. The data are the most sensitive yet taken to search for C IV at these redshifts, being 50% complete at column densities log N CIV ∼ 13.4(cm -2 ). We find no clear C IV systems in any of the four sight lines. Taking into account our completeness, this translates into a decline in the number density of C IV absorbers in the range 13.2 CIV < 15.0 of at least a factor ∼4.1 (95% confidence) from z ∼ 2-4.5, over which the number density is relatively constant. We use our lack of detections, along with results from previous studies, to set limits on the slope and normalization of the column density distribution at z = 5.3-6.0. The rapid evolution of C IV at these redshifts suggests that the decrease in the number density may largely be due to ionization effects, in which case many of the metals in the z ∼ 4.5 intergalactic medium (IGM) could already be in place at z ∼ 5.3, but in lower ionization states. The lack of weak systems in our data, combined with the presence of strong C IV absorbers along at least one other sight line, further suggests that there may be large-scale variations in the enrichment and/or ionization state of the z ∼ 6 IGM. Alternatively, the known C IV absorbers at these redshifts may not reside in the general IGM, but may be associated with rare, UV-bright star-forming galaxies.

Leaching from MSWI bottom ash: Evaluation of non-equilibrium in column percolation experiments

DEFF Research Database (Denmark)

Hyks, Jiri; Astrup, Thomas; Christensen, Thomas Højlund

2009-01-01

-equilibrium-induced changes in the solubility control. Despite both physical and chemical non-equilibrium, the Columns were found to provide adequate information for readily soluble compounds (i.e., Na, Cl-, and K) and solubility-controlled elements (i.e., Ca, SO42-, Ba, Si, Al, Zn, and Pb). The leaching Of Cu and Ni...... was shown to depend strongly on DOC leaching, which was likely affected by physical non-equilibrium during flow interruptions. Consequently, the leaching of Cu and Ni in the undisturbed Columns Was shown to be by about one order of magnitude lower compared with the interrupted column. The results indicate...... in turn appeared to be controlled by diffusion from the stagnant zone: no Mo controlling minerals were predicted by the geochemical modeling....

Solutions of group IV elements in liquid lithium

International Nuclear Information System (INIS)

Dadd, A.T.; Hubberstey, P.; Roberts, P.G.

1982-01-01

The solubilities of tin (0.00 = 22 Sn 5 . A simple thermochemical cycle is used to demonstrate that, whereas carbon dissolves endothermically in both liquid lithium and liquid sodium, the heavier Group IV elements dissolve exothermically. A similar cycle is used to derive solvation enthalpies (for the neutral gaseous species) for all Group IV elements in the two solvents. The trend in solvation enthalpy: C > Si > Ge > Sn > Pb is indicative of a diminishing affinity of solvent for solute and is attributed to the increasing metallic character of the solute as the Group is descended. (author)

Fytochemický výzkum Evolvulus alsinoides IV.

OpenAIRE

Svačinová, Jana

2006-01-01

Svačinová Jana: Rigorous thesis (2006) PHYTOCHEMICAL STUDY OF EVOLVULUS ALSINOIDES IV. This thesis deals with phytochemical research of plant Evolvulus alsinoides from family Convolvulaceae. Petrolether extract of leaves was separated by column and preparative TLC chromatography. Mixture of esters of 3-methoxy-4-hydroxycinnamic acid with long linear alcohols has been isolated and confirmed by 1 H NMR and MS spectrum. Its antiradical and platelet antiaggregatory activity was established.

Antineoplastic Effects of siRNA against TMPRSS2-ERG Junction Oncogene in Prostate Cancer.

Directory of Open Access Journals (Sweden)

Giorgia Urbinati

Full Text Available TMPRSS2-ERG junction oncogene is present in more than 50% of patients with prostate cancer and its expression is frequently associated with poor prognosis. Our aim is to achieve gene knockdown by siRNA TMPRSS2-ERG and then to assess the biological consequences of this inhibition. First, we designed siRNAs against the two TMPRSS2-ERG fusion variants (III and IV, most frequently identified in patients' biopsies. Two of the five siRNAs tested were found to efficiently inhibit mRNA of both TMPRSS2-ERG variants and to decrease ERG protein expression. Microarray analysis further confirmed ERG inhibition by both siRNAs TMPRSS2-ERG and revealed one common down-regulated gene, ADRA2A, involved in cell proliferation and migration. The siRNA against TMPRSS2-ERG fusion variant IV showed the highest anti-proliferative effects: Significantly decreased cell viability, increased cleaved caspase-3 and inhibited a cluster of anti-apoptotic proteins. To propose a concrete therapeutic approach, siRNA TMPRSS2-ERG IV was conjugated to squalene, which can self-organize as nanoparticles in water. The nanoparticles of siRNA TMPRSS2-ERG-squalene injected intravenously in SCID mice reduced growth of VCaP xenografted tumours, inhibited oncoprotein expression and partially restored differentiation (decrease in Ki67. In conclusion, this study offers a new prospect of treatment for prostate cancer based on siRNA-squalene nanoparticles targeting TMPRSS2-ERG junction oncogene.

Kinetics of U(VI) reduction control kinetics of U(IV) reoxidation

International Nuclear Information System (INIS)

Senko, J.M.; Minyard, M.L.; Dempsey, B.A.; Roden, E.E.; Yeh, G.-T.; Burgos, W.D.

2006-01-01

For the in situ reductive immobilization of U to be an acceptable strategy for the removal of that element from groundwater, the long-term stability of U(IV) must be determined. Rates of biotransformation of Fe species influence the mineralogy of the resulting products (Fredrickson et al., 2003; Senko et al., 2005), and we hypothesize that the rate of U(VI) reduction influences the mineralogy of resultant U(IV) precipitates. We hypothesize that slower rates of U(VI) reduction will yield U(IV) phases that are more resistant to reoxidation, and will therefore be more stable upon cessation of electron donor addition. U(IV) phases formed by relatively slow reduction may be more crystalline or larger in comparison to their relatively rapidly-formed counterparts (Figure 1), thus limiting the reactivity of slowly-formed U(IV) phases toward various oxidants. The physical location of U(IV) precipitates relative to bacterial cells may also limit the reactivity of biogenic U(IV) phases. In this situation, we expect that precipitation of U(IV) within the bacterial cell may protect U(IV) from reoxidation by limiting physical contact between U(IV) and oxidants (Figure 1). We assessed the effect of U(VI) reduction rate on the subsequent reoxidation of biogenic U(IV) and are currently conducting column scale studies to determine whether U(VI) reduction rate can be manipulated by varying the electron donor concentration used to stimulate U(VI) reduction

Development of thin-film Si HYBRID solar module

Energy Technology Data Exchange (ETDEWEB)

Nakajima, Akihiko; Gotoh, Masahiro; Sawada, Toru; Fukuda, Susumu; Yoshimi, Masashi; Yamamoto, Kenji; Nomura, Takuji [Kaneka Corporation, 2-1-1, Hieitsuji, Otsu, Shiga 520-0104 (Japan)

2009-06-15

The device current-voltage (I-V) characteristics of thin-film silicon stacked tandem solar modules (HYBRID modules), consisting of a hydrogenated amorphous silicon (a-Si:H) cell and a thin-film crystalline silicon solar cell ({mu}c-Si), have been investigated under various spectral irradiance distributions. The performance of the HYBRID module varied periodically in natural sunlight due to the current-limiting property of the HYBRID module and the environmental effects. The behavior based on the current-limiting property was demonstrated by the modelling of the I-V curves using the linear interpolation method for each component cell. The improvement of the performance for the HYBRID module in natural sunlight will also be discussed from the viewpoint of the device design of the component cells. (author)

Breakdown of coupling dielectrics for Si microstrip detectors

International Nuclear Information System (INIS)

Candelori, A.; Paccagnella, A.; Padova Univ.; Saglimbeni, G.

1999-01-01

Double-layer coupling dielectrics for AC-coupled Si microstrip detectors have been electrically characterized in order to determine their performance in a radiation-harsh environment, with a focus on the dielectric breakdown. Two different dielectric technologies have been investigated: SiO 2 /TEOS and SiO 2 /Si 3 N 4 . Dielectrics have been tested by using a negative gate voltage ramp of 0.2 MV/(cm·s). The metal/insulator/Si I-V characteristics show different behaviours depending on the technology. The extrapolated values of the breakdown field for unirradiated devices are significantly higher for SiO 2 /Si 3 N 4 dielectrics, but the data dispersion is lower for SiO 2 /TEOS devices. No significant variation of the breakdown field has been measured after a 10 Mrad (Si) γ irradiation for SiO 2 /Si 3 N 4 dielectrics. Finally, the SiO 2 /Si 3 N 4 DC conduction is enhanced if a positive gate voltage ramp is applied with respect to the negative one, due to the asymmetric conduction of the double-layer dielectric

Use of a pulsed column contactor as a continuous oxalate precipitation reactor

International Nuclear Information System (INIS)

Borda, Gilles; Brackx, Emmanuelle; Boisset, Laurence; Duhamet, Jean; Ode, Denis

2011-01-01

Research highlights: → A new type of continuous precipitating device was patented by CEA and tested with reaction between a surrogate nitrate cerium(III) or neodymium(III) and oxalate complexing agent. → Precipitate is confined in aqueous phase emulsion in tetrapropylene hydrogen and does not form deposit on the vessel walls. → Measure size of the precipitate ranges from 20 to 40 μm, it meets the process requirements to filter, and the precipitation reaction is complete. → The laboratory design can be extrapolated to an industrial uranium(IV) and minor actinide(III) coprecipitating column. - Abstract: The current objective of coprecipitating uranium, and minor actinides in order to fabricate a new nuclear fuel by direct (co)precipitation for further transmutation, requires to develop specific technology in order to meet the following requirements: nuclear maintenance, criticity, and potentially high flowrates due to global coprecipitation. A new type of device designed and patented by the CEA was then tested in 2007 under inactive conditions and with uranium. The patent is for organic confinement in a pulsed column (PC). Actually, pulsed columns have been working for a long time in a nuclear environment, as they allow high capacity, sub-critical design (annular geometry) and easy high activity maintenance. The precipitation reaction between the oxalate complexing agent and a surrogate nitrate - cerium(III) or neodymium(III) alone, or coprecipitated uranium(IV) and cerium(III) - occurs within an emulsion created in the device by these two phases flowing with a counter-current chemically inert organic phase (for example tetrapropylene hydrogen-TPH) produced by the stirring action of the column pulsator. The precipitate is confined and thus does not form deposits on the vessel walls (which are also water-repellent); it flows downward by gravity and exits the column continuously into a settling tank. The results obtained for precipitation of cerium or

Flow-through Column Experiments and Modeling of Microbially Mediated Cr(VI) Reduction at Hanford 100H

Science.gov (United States)

Yang, L.; Molins, S.; Beller, H. R.; Brodie, E. L.; Steefel, C.; Nico, P. S.; Han, R.

2010-12-01

Fe(II) and Mn(II) released from the sediment could account for the observed Cr(VI) removal. The biogeochemical modeling was employed to test two hypotheses that could explain the release of Fe(II) and Mn(II) from the column sediments: 1) acetate produced by lactate fermentation provided the substrate for the growth of iron(III) and manganese(IV) oxide reducers, and 2) direct reduction of iron(III) and manganese(IV) oxides by hydrogen sulfide generated during sulfate reduction. Overall, experimental and modeling results suggested that Cr(VI) reduction in the sulfate-reducing columns occurred through a complex network of microbial reactions that included fermentation, sulfate reduction, and possibly the stimulated iron-reducing communities.

Substrate temperature effects on reactively sputtered Cr2O3/n-Si heterojunctions

International Nuclear Information System (INIS)

Ocak, Yusuf Selim; Genisel, Mustafa Fatih; Issa, Ali Ahmed; Tombak, Ahmet; Kilicoglu, Tahsin

2016-01-01

To see the effects of substrate temperature on Cr 2 O 3 /n-Si heterojunctions, Cr 2 O 3 thin films were formed on n-Si and glass substrates at 40, 150 and 250 °C by radio frequency (RF) reactive sputtering technique. High purity Cr was used as target and oxygen was used as reactive gas. Optical properties of Cr 2 O 3 /n-Si thin films were analyzed using UV-vis data. The band gaps of the films were compared. The electrical properties of Cr 2 O 3 /n-Si heterojunction were tested by their current voltage ( I-V ) measurements in dark. It was observed that the heterojunction which was fabricated by forming Cr 2 O 3 thin film at 250 °C gave better rectification. The characteristic electrical parameters such as barrier height, ideality factor and series resistance were calculated by using its I-V data. The influence of light intensity on photovoltaic effect behavior of the device was also calculated, finally the barrier height value of the structure obtained from capacitance-voltage ( C-V ) data were compared with the one calculated from I-V measurements. (paper)

Realization of Colored Multicrystalline Silicon Solar Cells with SiO2/SiNx:H Double Layer Antireflection Coatings

Directory of Open Access Journals (Sweden)

Minghua Li

2013-01-01

Full Text Available We presented a method to use SiO2/SiNx:H double layer antireflection coatings (DARC on acid textures to fabricate colored multicrystalline silicon (mc-Si solar cells. Firstly, we modeled the perceived colors and short-circuit current density (Jsc as a function of SiNx:H thickness for single layer SiNx:H, and as a function of SiO2 thickness for the case of SiO2/SiNx:H (DARC with fixed SiNx:H (refractive index n=2.1 at 633 nm, and thickness = 80 nm. The simulation results show that it is possible to achieve various colors by adjusting the thickness of SiO2 to avoid significant optical losses. Therefore, we carried out the experiments by using electron beam (e-beam evaporation to deposit a layer of SiO2 over the standard SiNx:H for 156×156 mm2 mc-Si solar cells which were fabricated by a conventional process. Semisphere reflectivity over 300 nm to 1100 nm and I-V measurements were performed for grey yellow, purple, deep blue, and green cells. The efficiency of colored SiO2/SiNx:H DARC cells is comparable to that of standard SiNx:H light blue cells, which shows the potential of colored cells in industrial applications.

Facile reductive silylation of UO{sub 2}{sup 2+} to uranium(IV) chloride

Energy Technology Data Exchange (ETDEWEB)

Kiernicki, John J.; Bart, Suzanne C. [H.C. Brown Laboratory, Department of Chemistry, Purdue University, West Lafayette, IN (United States); Zeller, Matthias [H.C. Brown Laboratory, Department of Chemistry, Purdue University, West Lafayette, IN (United States); Department of Chemistry, Youngstown State University, Youngstown, OH (United States)

2017-01-19

General reductive silylation of the UO{sub 2}{sup 2+} cation occurs readily in a one-pot, two-step stoichiometric reaction at room temperature to form uranium(IV) siloxides. Addition of two equivalents of an alkylating reagent to UO{sub 2}X{sub 2}(L){sub 2} (X=Cl, Br, I, OTf; L=triphenylphosphine oxide, 2,2'-bipyridyl) followed by two equivalents of a silyl (pseudo)halide, R{sub 3}Si-X (R=aryl, alkyl, H; X=Cl, Br, I, OTf, SPh), cleanly affords (R{sub 3}SiO){sub 2}UX{sub 2}(L){sub 2} in high yields. Support is included for the key step in the process, reduction of U{sup VI} to U{sup V}. This procedure is applicable to a wide range of commercially available uranyl salts, silyl halides, and alkylating reagents. Under this protocol, one equivalent of SiCl{sub 4} or two equivalents of Me{sub 2}SiCl{sub 2} results in direct conversion of the uranyl to uranium(IV) tetrachloride. Full spectroscopic and structural characterization of the siloxide products is reported. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

Study of alkylphenols, indol and pyridinic nucleus of HPAN compounds by SPE/SI and SPE/C{sub 18}/NEC: application of SPE/Si phase to oils from the Alagoas sub-basin

Energy Technology Data Exchange (ETDEWEB)

Reboucas, L.M.C.; Nogueira, F.A.R.; Sabino, A.R.; Araujo, O.R.P.; Sant' Ana, A.E.G. [Universidade Federal de Alagoas (LABIS/UFAL), Maceio, AL (Brazil). Inst. de Quimica e Biotecnologia. Lab. de Analise de Biomarcadores e Semioquimicos], E-mail: lmcr@qui.ufal.br

2008-10-15

Alkylphenols (AP) and hydrocarbon polycyclic aromatic nitrogen (HPAN) compounds are important to study secondary migrations of petroleum. The behavior of AP and HPAN standards was investigated by solid phase extraction (SPE) on silica gel (SPE/Si) and C{sub 18}/NEC (SPE/C{sub 18}) stationary phases. The AP standards were eluted with dichloromethane (DCM) in the F2 fraction, on both SPE/Si and SPE/C{sub 18} phases. The basic and neutral HPAN compounds were eluted together with DCM, in F2 fraction, when a SPE/C18 column was used. However in the SPE/Si column the HPAN compounds were separated by their basic and neutral character in two different fractions. The neutral HPAN compounds were eluted with DCM, F2 fraction, and the HPAN basic compounds were eluted with the mixture DCM:isopropanol 5%, F3 fraction. In general, the quantity of recovered AP and HPAN compounds was higher with SPE/Si than SPE/C{sub 18}. The nine oil samples were analyzed by SPE/Si and the saturated and aromatic hydrocarbon were separated from the polar AP and HPAN. (author)

SI units in radiation protection

International Nuclear Information System (INIS)

Jain, V.K.; Soman, S.D.

1978-01-01

International System of Units abbreviated as SI units has been adopted by most of the countries of the world. Following this development, the implementation of SI units has become mandatory with a transition period of about ten years. Some of the journals have already adopted the SI units and any material sent for publication to them must use only these. International Commission on Radiation Units and Measurement (ICRU) published letters in several journals including Physics in Medicine and Biology, Health Physics, British Journal of Radiology, etc. outlining the latest recommendations on SI units to elicit the reactions of scientists in the general field of radiological sciences. Reactions to the letters were numerous as can be seen in the correspondence columns of these journals for the last few years and ranged from great misgivings and apprehension to support and appreciation. SI units have also been the subject of editorial comments in several journals. On the basis of a survey of this literature, it may be said that there was general agreement on the long term advantage of SI units inspite of some practical difficulties in their use particularly in the initial stages. This report presents a review of SI units in radiological sciences with a view to familiarize the users with the new units in terms of the old. A time table for the gradual changeover to the SI units is also outlined. (auth.)

Enhanced absorption in Au nanoparticles/a-Si:H/c-Si heterojunction solar cells exploiting Au surface plasmon resonance

Energy Technology Data Exchange (ETDEWEB)

Losurdo, Maria; Giangregorio, Maria M.; Bianco, Giuseppe V.; Sacchetti, Alberto; Capezzuto, Pio; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy)

2009-10-15

Au nanoparticles (NPs)/(n-type)a-Si:H/(p-type)c-Si heterojunctions have been deposited combining plasma-enhanced chemical-vapour deposition (PECVD) with Au sputtering. We demonstrate that a density of {proportional_to}1.3 x 10{sup 11} cm{sup -2} of Au nanoparticles with an approximately 20 nm diameter deposited onto (n-type)a-Si:H/(p-type)c-Si heterojunctions enhance performance exploiting the improved absorption of light by the surface plasmon resonance of Au NPs. In particular, Au NPs/(n-type)a-Si:H/(p-type)c-Si show an enhancement of 20% in the short-circuit current, J{sub SC}, 25% in the power output, P{sub max} and 3% in the fill factor, FF, compared to heterojunctions without Au NPs. Structures have been characterized by spectroscopic ellipsometry, atomic force microscopy and current-voltage (I-V) measurements to correlate the plasmon resonance-induced enhanced absorption of light with photovoltaic performance. (author)

Design of Batch Distillation Columns Using Short-Cut Method at Constant Reflux

Directory of Open Access Journals (Sweden)

Asteria Narvaez-Garcia

2013-01-01

Full Text Available A short-cut method for batch distillation columns working at constant reflux was applied to solve a problem of four components that needed to be separated and purified to a mole fraction of 0.97 or better. Distillation columns with 10, 20, 30, 40, and 50 theoretical stages were used; reflux ratio was varied between 2 and 20. Three quality indexes were used and compared: Luyben’s capacity factor, total annual cost, and annual profit. The best combinations of theoretical stages and reflux ratio were obtained for each method. It was found that the best combinations always required reflux ratios close to the minimum. Overall, annual profit was the best quality index, while the best combination was a distillation column with 30 stages, and reflux ratio’s of 2.0 for separation of benzene (i, 5.0 for the separation of toluene (ii, and 20 for the separation of ethylbenzene (iii and purification of o-xylene (iv.

SHH1, a homeodomain protein required for DNA methylation, as well as RDR2, RDM4, and chromatin remodeling factors, associate with RNA polymerase IV.

Directory of Open Access Journals (Sweden)

Julie A Law

2011-07-01

Full Text Available DNA methylation is an evolutionarily conserved epigenetic modification that is critical for gene silencing and the maintenance of genome integrity. In Arabidopsis thaliana, the de novo DNA methyltransferase, domains rearranged methyltransferase 2 (DRM2, is targeted to specific genomic loci by 24 nt small interfering RNAs (siRNAs through a pathway termed RNA-directed DNA methylation (RdDM. Biogenesis of the targeting siRNAs is thought to be initiated by the activity of the plant-specific RNA polymerase IV (Pol-IV. However, the mechanism through which Pol-IV is targeted to specific genomic loci and whether factors other than the core Pol-IV machinery are required for Pol-IV activity remain unknown. Through the affinity purification of nuclear RNA polymerase D1 (NRPD1, the largest subunit of the Pol-IV polymerase, we found that several previously identified RdDM components co-purify with Pol-IV, namely RNA-dependent RNA polymerase 2 (RDR2, CLASSY1 (CLSY1, and RNA-directed DNA methylation 4 (RDM4, suggesting that the upstream siRNA generating portion of the RdDM pathway may be more physically coupled than previously envisioned. A homeodomain protein, SAWADEE homeodomain homolog 1 (SHH1, was also found to co-purify with NRPD1; and we demonstrate that SHH1 is required for de novo and maintenance DNA methylation, as well as for the accumulation of siRNAs at specific loci, confirming it is a bonafide component of the RdDM pathway.

Modeling Stone Columns.

Science.gov (United States)

Castro, Jorge

2017-07-11

This paper reviews the main modeling techniques for stone columns, both ordinary stone columns and geosynthetic-encased stone columns. The paper tries to encompass the more recent advances and recommendations in the topic. Regarding the geometrical model, the main options are the "unit cell", longitudinal gravel trenches in plane strain conditions, cylindrical rings of gravel in axial symmetry conditions, equivalent homogeneous soil with improved properties and three-dimensional models, either a full three-dimensional model or just a three-dimensional row or slice of columns. Some guidelines for obtaining these simplified geometrical models are provided and the particular case of groups of columns under footings is also analyzed. For the latter case, there is a column critical length that is around twice the footing width for non-encased columns in a homogeneous soft soil. In the literature, the column critical length is sometimes given as a function of the column length, which leads to some disparities in its value. Here it is shown that the column critical length mainly depends on the footing dimensions. Some other features related with column modeling are also briefly presented, such as the influence of column installation. Finally, some guidance and recommendations are provided on parameter selection for the study of stone columns.

Post column derivatisation analyses review. Is post-column derivatisation incompatible with modern HPLC columns?

Science.gov (United States)

Jones, Andrew; Pravadali-Cekic, Sercan; Dennis, Gary R; Shalliker, R Andrew

2015-08-19

Post Column derivatisation (PCD) coupled with high performance liquid chromatography or ultra-high performance liquid chromatography is a powerful tool in the modern analytical laboratory, or at least it should be. One drawback with PCD techniques is the extra post-column dead volume due to reaction coils used to enable adequate reaction time and the mixing of reagents which causes peak broadening, hence a loss of separation power. This loss of efficiency is counter-productive to modern HPLC technologies, -such as UHPLC. We reviewed 87 PCD methods published from 2009 to 2014. We restricted our review to methods published between 2009 and 2014, because we were interested in the uptake of PCD methods in UHPLC environments. Our review focused on a range of system parameters including: column dimensions, stationary phase and particle size, as well as the geometry of the reaction loop. The most commonly used column in the methods investigated was not in fact a modern UHPLC version with sub-2-micron, (or even sub-3-micron) particles, but rather, work-house columns, such as, 250 × 4.6 mm i.d. columns packed with 5 μm C18 particles. Reaction loops were varied, even within the same type of analysis, but the majority of methods employed loop systems with volumes greater than 500 μL. A second part of this review illustrated briefly the effect of dead volume on column performance. The experiment evaluated the change in resolution and separation efficiency of some weak to moderately retained solutes on a 250 × 4.6 mm i.d. column packed with 5 μm particles. The data showed that reaction loops beyond 100 μL resulted in a very serious loss of performance. Our study concluded that practitioners of PCD methods largely avoid the use of UHPLC-type column formats, so yes, very much, PCD is incompatible with the modern HPLC column. Copyright © 2015. Published by Elsevier B.V.

Electrical, photoelectrical and morphological properties of ZnO nanofiber networks grown on SiO{sub 2} and on Si nanowires

Energy Technology Data Exchange (ETDEWEB)

Vega, Nadia Celeste; Comedi, David [Universidad Nacional de Tucuman (FACET/UNT), (Argentina). Facultad de Ciencias Exactas y Tecnologia. Dept. de Fisica. Lab. de Fisica del Solido; Audebert, Fernando [Consejo Nacional de Investigaciones Cientificas y Tecnicas (CONICET) (Argentina); Tirado, Monica, E-mail: mtirado@herrera.unt.edu.ar [Universidad Nacional de Tucuman (FACET/UNT), (Argentina). Facultad de Ciencias Exactas y Tecnologia. Dept. de Fisica. Lab. de Nanomateriales y de Propiedades Dielectricas; Rodriguez, Andres; Rodriguez, Tomas [Universidad Politecnica de Madrid (ETSIT/UPM), Madrid (Spain). Escuela Tecnica Superior de Ingenieros de Telecomucacion. Tecnologia Electronica; Hughes, Gareth M.; Grovenor, Chris R.M. [University of Oxford, Parks Road, OX (United Kingdom). Dept. of Materials

2013-11-01

ZnO nanofibre networks (NFNs) were grown by vapour transport method on Si-based substrates. One type of substrate was SiO{sub 2} thermally grown on Si and another consisted of a Si wafer onto which Si nanowires (NWs) had been grown having Au nanoparticles catalysts. The ZnO-NFN morphology was observed by scanning electron microscopy on samples grown at 600 Degree-Sign C and 720 Degree-Sign C substrate temperature, while an focused ion beam was used to study the ZnO NFN/Si NWs/Si and ZnO NFN/SiO{sub 2} interfaces. Photoluminescence, electrical conductance and photo conductance of ZnO-NFN was studied for the sample grown on SiO{sub 2}. The photoluminescence spectra show strong peaks due to exciton recombination and lattice defects. The ZnO-NFN presents quasi-persistent photoconductivity effects and ohmic I-V characteristics which become nonlinear and hysteretic as the applied voltage is increased. The electrical conductance as a function of temperature can be described by a modified three dimensional variable hopping model with nanometer-ranged typical hopping distances. (author)

Pore Structure and Fluoride Ion Adsorption Characteristics of Zr (IV) Surface-Immobilized Resin Prepared Using Polystyrene as a Porogen

Science.gov (United States)

Mizuki, Hidenobu; Ito, Yudai; Harada, Hisashi; Uezu, Kazuya

Zr(IV) surface-immobilized resins for removal of fluoride ion were prepared by surface template polymerization using polystyrene as a porogen. At polymerization, polystyrene was added in order to increase mesopores (2-50 nm) and macropore (>50 nm) with large macropores (around 300 nm) formed with internal aqueous phase of W⁄O emulsion. The pore structure of Zr(IV) surface-immobilized resins was evaluated by measuring specific surface area, pore volume, and pore size distribution with volumetric adsorption measurement instrument and mercury porosimeter. The adsorption isotherms were well fitted by Langmuir equation. The removal of fluoride was also carried out with column method. Zr(IV) surface-immobilized resins, using 10 g⁄L polystyrene in toluene at polymerization, possessed higher volume of not only mesopores and macropores but also large macropores. Furethermore, by adding the polystyrene with smaller molecular size, the pore volume of mesopores, macropores and large macropores was significantly increased, and the fluoride ion adsorption capacity and the column utilization also increased.

Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector

Science.gov (United States)

Rahim, Alhan Farhanah Abd; Zainal Badri, Nur'Amirah; Radzali, Rosfariza; Mahmood, Ainorkhilah

2017-11-01

In this paper, an investigation of design and simulation of silicon germanium (SiGe) islands on silicon (Si) was presented for potential visible metal semiconductor metal (MSM) photodetector. The characterization of the performances in term of the structural, optical and electrical properties of the structures was analyzed from the simulation results. The project involves simulation using SILVACO Technology Computer Aided Design (TCAD) tools. The different structures of the silicon germanium (SiGe) island on silicon substrate were created, which were large SiGe, small SiGe, combination SiGe and bulk Ge. All the structures were tested for potential Metal Semiconductor Metal (MSM) photodetector. The extracted data such as current versus voltage characteristic, current gain and spectral response were obtained using ATLAS SILVACO tools. The performance of SiGe island structures and bulk Ge on Si substrate as (MSM) photodetector was evaluated by photo and dark current-voltage (I-V) characteristics. It was found that SiGe islands exhibited higher energy band gap compared to bulk Ge. The SiGe islands current-voltage characteristics showed improved current gain compared to bulk Ge. Specifically the enhancement of the islands gain was contributed by the enhanced photo currents and lower dark currents. The spectral responses of the SiGe islands showed peak response at 590 nm (yellow) which is at the visible wavelength. This shows the feasibility of the SiGe islands to be utilized for visible photodetections.

Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector

Directory of Open Access Journals (Sweden)

Abd Rahim Alhan Farhanah

2017-01-01

Full Text Available In this paper, an investigation of design and simulation of silicon germanium (SiGe islands on silicon (Si was presented for potential visible metal semiconductor metal (MSM photodetector. The characterization of the performances in term of the structural, optical and electrical properties of the structures was analyzed from the simulation results. The project involves simulation using SILVACO Technology Computer Aided Design (TCAD tools. The different structures of the silicon germanium (SiGe island on silicon substrate were created, which were large SiGe, small SiGe, combination SiGe and bulk Ge. All the structures were tested for potential Metal Semiconductor Metal (MSM photodetector. The extracted data such as current versus voltage characteristic, current gain and spectral response were obtained using ATLAS SILVACO tools. The performance of SiGe island structures and bulk Ge on Si substrate as (MSM photodetector was evaluated by photo and dark current-voltage (I-V characteristics. It was found that SiGe islands exhibited higher energy band gap compared to bulk Ge. The SiGe islands current-voltage characteristics showed improved current gain compared to bulk Ge. Specifically the enhancement of the islands gain was contributed by the enhanced photo currents and lower dark currents. The spectral responses of the SiGe islands showed peak response at 590 nm (yellow which is at the visible wavelength. This shows the feasibility of the SiGe islands to be utilized for visible photodetections.

Study of System Pressure Dependence on n-TiO2/p-Si Hetrostructure for Photovoltaic Applications

Directory of Open Access Journals (Sweden)

S. Ramezani Sani

2015-01-01

Full Text Available This study reports the fabrication of n-TiO2/p-Si hetrojunction by deposition of TiO2nanowires on p-Si substrate. The effect of system pressure and the current-voltage (I-V characteristics of n-TiO2/p-si hetrojunction were studied. The morphology of the samples was investigated by Field Emission Scanning Electron Microscopy (FESEM which confirms formation of TiO2 nanowires that their diameters increase with increasing the pressure of system. The I-V characteristics were measured to investigate the hetrojunction effects of under forward and reverse biases at different system pressure by sweeping in the voltage from 0 to +6 V, then to -6 V, and finally reaching 0 V. TiO2/Si diodes   in the system pressure 60 mbar and 30 mbar indicated that a p-n junction formed in the n-TiO2/p-Si hetrojunction. But as the system pressure increased to 1000 mbar, the I-V characteristics became inversed. This treatment can be scribed by the change of the energy band structure of TiO2.

study on 113 Sn-113m In generator of the chromatographic column elution mode

International Nuclear Information System (INIS)

Abdel-Halim, A.A.

2002-01-01

this work has been carried out to study the optimum conditions required for local preparation of 113 Sn- 113m In radioisotope generator based on 12- molybdocerate- 113 Sn column matrix. this work was directed to: 1- investigate the optimum conditions of the tin target irradiation and dissolution processes. 2- study the different preparative conditions which affect the loading of 113 Sn radionuclide onto 12- molybdocerate (IV) columns and the elution of the generated 113m In radionuclide. 3- study the effect of generator life- time on the elution performance and quality control of the generated 113m In radionuclide over a period of 190 days

Electronic properties of Al/DNA/p-Si MIS diode: Application as temperature sensor

International Nuclear Information System (INIS)

Guellue, O.; Tueruet, A.

2011-01-01

Research highlights: → This work proposes that DNA molecules should be considered, among other candidates, as a potential organic thin film for metal-interface layer-semiconductor devices. → We successfully fabricated Al/DNA/p-Si device with interlayer by a simple cast method. → The temperature is found to significantly effect the electrical properties of the Al/DNA/p-Si device. → The facts: (i) that the technology of the fabrication of a Al/DNA/p-Si Schottky diode much simpler and economical than that for the Si p-n junction and (ii) the sensibility of the Al/DNA/p-Si Schottky diode as temperature sensor is 42% higher than that of a Si p-n junction, indicate that the Al/DNA/p-Si Schottky diode is a good alternative as temperature sensor. - Abstract: The current-voltage (I-V) measurements were performed in the temperature range (200-300 K) on Al/DNA/p-Si Schottky barrier type diodes. The Schottky diode shows non-ideal I-V behaviour with ideality factors n equal to 1.34 ± 0.02 and 1.70 ± 0.02 at 300 K and 200 K, respectively, and is thought to have a metal-interface layer-semiconductor (MIS) configuration. The zero-bias barrier height Φ b determined from the I-V measurements was 0.75 ± 0.01 eV at 300 K and decreases to 0.61 ± 0.01 eV at 200 K. The forward voltage-temperature (V F -T) characteristics were obtained from the I-V measurements in the temperature range 200-300 K at different activation currents (I F ) in the range 20 nA-6 μA. The V F -T characteristics were linear for three activation currents in the diode. From the V F -T characteristics at 20 nA, 100 nA and 6 μA, the values of the temperature coefficients of the forward bias voltage (dV F /dT) for the diode were determined as -2.30 mV K -1 , -2.60 mV K -1 and -3.26 mV K -1 with a standard error of 0.05 mV K -1 , respectively.

Electronic properties of Al/DNA/p-Si MIS diode: Application as temperature sensor

Energy Technology Data Exchange (ETDEWEB)

Guellue, O., E-mail: omergullu@gmail.com [Batman University, Science and Art Faculty, Department of Physics, 72060 Batman (Turkey); Osmaniye Korkut Ata University, Science and Art Faculty, Department of Physics, 80000 Osmaniye (Turkey); Tueruet, A. [Atatuerk University, Science Faculty, Department of Physics, 25240 Erzurum (Turkey)

2011-01-21

Research highlights: > This work proposes that DNA molecules should be considered, among other candidates, as a potential organic thin film for metal-interface layer-semiconductor devices. > We successfully fabricated Al/DNA/p-Si device with interlayer by a simple cast method. > The temperature is found to significantly effect the electrical properties of the Al/DNA/p-Si device. > The facts: (i) that the technology of the fabrication of a Al/DNA/p-Si Schottky diode much simpler and economical than that for the Si p-n junction and (ii) the sensibility of the Al/DNA/p-Si Schottky diode as temperature sensor is 42% higher than that of a Si p-n junction, indicate that the Al/DNA/p-Si Schottky diode is a good alternative as temperature sensor. - Abstract: The current-voltage (I-V) measurements were performed in the temperature range (200-300 K) on Al/DNA/p-Si Schottky barrier type diodes. The Schottky diode shows non-ideal I-V behaviour with ideality factors n equal to 1.34 {+-} 0.02 and 1.70 {+-} 0.02 at 300 K and 200 K, respectively, and is thought to have a metal-interface layer-semiconductor (MIS) configuration. The zero-bias barrier height {Phi}{sub b} determined from the I-V measurements was 0.75 {+-} 0.01 eV at 300 K and decreases to 0.61 {+-} 0.01 eV at 200 K. The forward voltage-temperature (V{sub F}-T) characteristics were obtained from the I-V measurements in the temperature range 200-300 K at different activation currents (I{sub F}) in the range 20 nA-6 {mu}A. The V{sub F}-T characteristics were linear for three activation currents in the diode. From the V{sub F}-T characteristics at 20 nA, 100 nA and 6 {mu}A, the values of the temperature coefficients of the forward bias voltage (dV{sub F}/dT) for the diode were determined as -2.30 mV K{sup -1}, -2.60 mV K{sup -1} and -3.26 mV K{sup -1} with a standard error of 0.05 mV K{sup -1}, respectively.

Irradiation damages in Ti3SiC2

International Nuclear Information System (INIS)

Nappe, J.C.; Grosseau, Ph.; Guilhot, B.; Audubert, F.; Beauvy, M.

2007-01-01

Carbides, by their remarkable properties, are considered as possible materials (fuel cans) in reactor of generation IV. Among those studied, Ti 3 SiC 2 is particularly considered because it joins both the ceramics and metals properties. Nevertheless, its behaviour under irradiation is not known. Characterizations have been carried out on samples irradiated at 75 MeV krypton ions. They have revealed that TiO 2 (formed at the surface of Ti 3 SiC 2 ) is pulverized by the irradiation and that the crystal lattice of Ti 3 SiC 2 dilates with c. (O.M.)

Indirect spectrophotometric determination of small amounts of selenium(IV) and arsenic(V) by simple extraction using flotation columns.

Science.gov (United States)

Mostafa, G A; Ghazy, S E

2001-10-01

A simple, rapid and selective procedure for the indirect spectrophotometric determination of Se(IV) and As(V) has been developed. It is based on the reduction of Se(IV) to Se(0) and As(V) to As(III) with hydroiodic acid (KI + HCl). The liberated iodine, equivalent to each analyte, is quantitatively extracted with oleic acid (HOL) surfactant. The iodine-HOL system exhibits its maximum absorbance at 435 nm. The different analytical parameters affecting the extraction and determination processes have been examined. The calibration graphs were found to be linear over the ranges 5-120 and 0.25-20 ppm of Se(IV) and As(V), with lower detection limits of 2.5 and 0.15 ppm and molar absorptivities of 1 x 10(4) and 0.5 x 10(4) dm3 mol(-1) cm(-1), respectively. Sandell's sensitivity was calculated to be 0.0078 and 0.0149 microg/cm2 in the same order. The relative standard deviation for five replicate analyses of 40 ppm Se(IV) and 4 ppm As(V) were 1.0 and 0.9%, respectively. The proposed procedure in the presence of EDTA as a masking agent for foreign ions has been successfully applied to the determination of Se(IV) in a reference sample and As(V) in copper metal, in addition to their determination in spiked and polluted water samples.

Minority Carrier Tunneling and Stress-Induced Leakage Current for p+ gate MOS Capacitors with Poly-Si and PolySi0.7Ge0.3 Gate Material

NARCIS (Netherlands)

Houtsma, V.E.; Holleman, J.; Salm, Cora; de Haan, I.R.; Schmitz, Jurriaan; Widdershoven, F.P.; Widdershoven, F.P.; Woerlee, P.H.

1999-01-01

In this paper the I-V conduction mechanism for gate injection (-V g), Stress-Induced Leakage Current (SILC) characteristics and time-to-breakdown (tbd) of PMOS capacitors with p+-poly-Si and poly-SiGe gate material on 5.6, 4.8 and 3.1 nm oxide thickness are studied. A model based on Minority Carrier

Influence of oxygen doping on resistive-switching characteristic of a-Si/c-Si device

Science.gov (United States)

Zhang, Jiahua; Chen, Da; Huang, Shihua

2017-12-01

The influence of oxygen doping on resistive-switching characteristics of Ag/a-Si/p+-c-Si device was investigated. By oxygen doping in the growth process of amorphous silicon, the device resistive-switching performances, such as the ON/OFF resistance ratios, yield and stability were improved, which may be ascribed to the significant reduction of defect density because of oxygen incorporation. The device I-V characteristics are strongly dependent on the oxygen doping concentration. As the oxygen doping concentration increases, the Si-rich device gradually transforms to an oxygen-rich device, and the device yield, switching characteristics, and stability may be improved for silver/oxygen-doped a-Si/p+-c-Si device. Finally, the device resistive-switching mechanism was analyzed. Project supported by the Zhejiang Provincial Natural Science Foundation of China (No. LY17F040001), the Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University (No. KF2015_02), the Open Project Program of National Laboratory for Infrared Physics, Chinese Academy of Sciences (No. M201503), the Zhejiang Provincial Science and Technology Key Innovation Team (No. 2011R50012), and the Zhejiang Provincial Key Laboratory (No. 2013E10022).

Assembly for connecting the column ends of two capillary columns

International Nuclear Information System (INIS)

Kolb, B.; Auer, M.; Pospisil, P.

1984-01-01

In gas chromatography, the column ends of two capillary columns are inserted into a straight capillary from both sides forming annular gaps. The capillary is located in a tee out of which the capillary columns are sealingly guided, and to which carrier gas is supplied by means of a flushing flow conduit. A ''straight-forward operation'' having capillary columns connected in series and a ''flush-back operation'' are possible. The dead volume between the capillary columns can be kept small

Characteristics of Fabricated SiC Neutron Detectors for Neutron Flux Monitoring

Energy Technology Data Exchange (ETDEWEB)

Kim, Han Soo; Ha, Jang Ho; Park, Se Hwan; Lee, Kyu Hong [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Lee, Cheol Ho [Hanyang University, Seoul (Korea, Republic of)

2011-05-15

An SPND (Self-powered Neutron Detector) is commonly used for neutron detection in NPP (Nuclear Power Plant) by virtue of un-reactivity for gamma-rays. But it has a drawback, which is that it cannot detect neutrons in real time due to beta emissions (about > 48 s) after reactions between neutrons and {sup 103}Rh in an SPND. And Generation IV reactors such as MSR (Molten-salt reactor), SFR (Sodium-cooled fast reactor), and GFR (Gas-cooled fast reactor) are designed to compact size and integration type. For GEN IV reactor, neutron monitor also must be compact-sized to apply such reactor easily and much more reliable. The wide band-gap semiconductors such as SiC, AlN, and diamond make them an attractive alternative in applications in harsh environments by virtue of the lower operating voltage, faster charge-collection times compared with gas-filled detectors, and compact size.1) In this study, two PIN-type SiC semiconductor neutron detectors, which are for fast neutron detection by elastic and inelastic scattering SiC atoms and for thermal neutron detection by charged particle emissions of 6LiF reaction, were designed and fabricated for NPP-related applications. Preliminary tests such as I-V and alpha response were performed and neutron responses at ENF in HANARO research reactor were also addressed. The application feasibility of the fabricated SiC neutron detector as an in-core neutron monitor was discussed

Comparison of lactate, formate, and propionate as hydrogen donors for the reductive dehalogenation of trichloroethene in a continuous-flow column

Science.gov (United States)

Azizian, Mohammad F.; Marshall, Ian P. G.; Behrens, Sebastian; Spormann, Alfred M.; Semprini, Lewis

2010-04-01

A continuous-flow column study was conducted to analyze the reductive dehalogenation of trichloroethene (TCE) with aquifer material with high content of iron oxides. The column was bioaugmented with the Point Mugu (PM) culture, which is a mixed microbial enrichment culture capable of completely transforming TCE to ethene (ETH). We determined whether lactate, formate, or propionate fermentation resulted in more effective dehalogenation. Reductive dehalogenation, fermentation, and sulfate, Fe(III), and Mn(IV) reduction were all exhibited within the column. Different steady-states of dehalogenation were achieved based on the concentration of substrates added, with effective transformation to ETH obtained when ample electron donor equivalents were provided. Most of the metabolic reducing equivalents were channeled to sulfate, Fe(III), and Mn(IV) reduction. When similar electron reducing equivalents were added, the most effective dehalogenation was achieved with formate, with 14% of the electron equivalents going towards dehalogenation reactions, compared to 6.5% for lactate and 9.6% for propionate. Effective dehalogenation was maintained over 1000 days of column operation. Over 90% of electron equivalents added could be accounted for by the different electron accepting processes in the column, with 50% associated with soluble and precipitated Fe(II) and Mn(II). Bulk Fe(III) and Mn(IV) reduction was rather associated with lactate and propionate addition than formate addition. Sulfate reduction was a competing electron acceptor reaction with all three electron donors. DNA was extracted from solid coupon samples obtained during the course of the experiment and analyzed using 16S rRNA gene clone libraries and quantitative PCR. Lactate and propionate addition resulted in a significant increase in Geobacter, Spirochaetes, and Desulfitobacterium phylotypes relative to " Dehalococcoides" when compared to formate addition. Results from the molecular biological analyses support

Determination of uranium (IV) in cloride solutions of enrichment columns by spectrometry with flow injection

International Nuclear Information System (INIS)

Bastos, M.B.R.

1988-01-01

The utilization of Flow Injection Analysis for the U (IV) spectrophotometric determination in chloride solutions is described. The method has been shown reproducible in the range of concentrations and conditions employed with a standard deviation of about 0,3. (C.G.C.) [pt

Identification of two distinct allergenic sites on ryegrass-pollen allergen, Lol p IV.

Science.gov (United States)

Jaggi, K S; Ekramoddoullah, A K; Kisil, F T; Dzuba-Fischer, J M; Rector, E S; Sehon, A H

1989-04-01

Lol p IV is an important allergen of ryegrass pollen. For the immunochemical identification of antigenic and/or allergenic site(s), murine monoclonal antibodies (MAbs) were prepared against Lol p IV. The hybridoma cell-culture supernatants were screened for anti-Lol p IV antibodies by a combination of ELISA and Western immunoblot analyses. The MAbs were finally purified from ascites on a Mono Q ion-exchange column. In a competitive radioimmunoassay with Lol p IV as the solid phase and 125I-labeled MAbs, it was established that MAbs 90, 91, 92, 93, and 94, although they differed in their relative affinities, recognized in common with one another an epitope designated as antigenic site A, whereas MAb 12 recognized a different epitope referred to as site B. Sites A and B were also demonstrated to constitute allergenic determinants of Lol p IV. Differences in the repertoire of specificities of the human IgE antibodies directed to Lol p IV were also demonstrated. Interestingly, it was found that sera from both allergic as well as from nonatopic individuals had IgG antibodies to sites A and/or B.

Internal photoemission study on charge trapping behavior in rapid thermal oxides on strained-Si/SiGe heterolayers

International Nuclear Information System (INIS)

Bera, M.K.; Mahata, C.; Bhattacharya, S.; Chakraborty, A.K.; Armstrong, B.M.; Gamble, H.S.; Maiti, C.K.

2008-01-01

A comparative study on the nature of defects and their relationship to charge trapping with enhanced photosensitivity has been investigated through magnetic resonance and internal photoemission (IPE) experiments for rapid thermal grown oxides (RTO) on strained-Si/Si 0.8 Ge 0.2 and on co-processed bulk-Si (1 0 0) substrates. Both the band and defect-related electronic states were characterized through EPR, IPE, C-V and I-V measurements under UV-illumination. Surface chemical characterization of as-grown ultrathin oxides (5-7 nm) has been performed using high-resolution XPS. Enhancement in Ge-segregation with increasing oxidation temperature is reported. Comparative studies on interface properties and leakage current behavior of rapid thermal oxides have also been studied through fabricating metal-oxide-semiconductor capacitor structures. A degraded electrical property with increasing oxidation temperature is reported. Constant voltage stressing (CVS) in the range of 5.5-7 V was used to study the breakdown characteristics of different samples. We observe a distinguishably different time-to-breakdown (t bd ) phenomenon for bulk-Si and strained-Si/SiGe samples. Whereas the oxide on bulk-Si shows a typical breakdown behavior, the RTO grown oxide on strained-Si/SiGe samples showed a quasi-or soft-breakdown with lower t bd value. It may be pointed out that quasi-breakdown may be a stronger reliability limiting factor for strained-Si/SiGe devices in the oxide thickness range studied

Semiconductor nanocrystals formed in SiO2 by ion implantation

International Nuclear Information System (INIS)

Zhu, J.G.; White, C.W.; Budai, J.D.; Withrow, S.P.; Chen, Y.

1994-11-01

Nanocrystals of group IV (Si, Ge and SiGe), III-V (GaAs), and II-VI (CdSe) semiconductor materials have been fabricated inside SiO 2 by ion implantation and subsequent thermal annealing. The microstructure of these nanocrystalline semiconductor materials has been studied by transmission electron microscopy (TEM). The nanocrystals form in near-spherical shape with random crystal orientations in amorphous SiO 2 . Extensive studies on the nanocrystal size distributions have been carried out for the Ge nanocrystals by changing the implantation doses and the annealing temperatures. Remarkable roughening of the nanocrystals occurs when the annealing temperature is raised over the melting temperature of the implanted semiconductor material. Strong red photoluminescence peaked around 1.67 eV has been achieved in samples with Si nanocrystals in SiO 2

Vertebral column regionalisation in Chinook salmon, Oncorhynchus tshawytscha.

Science.gov (United States)

De Clercq, A; Perrott, M R; Davie, P S; Preece, M A; Wybourne, B; Ruff, N; Huysseune, A; Witten, P E

2017-10-01

Teleost vertebral centra are often similar in size and shape, but vertebral-associated elements, i.e. neural arches, haemal arches and ribs, show regional differences. Here we examine how the presence, absence and specific anatomical and histological characters of vertebral centra-associated elements can be used to define vertebral column regions in juvenile Chinook salmon (Oncorhynchus tshawytscha). To investigate if the presence of regions within the vertebral column is independent of temperature, animals raised at 8 and 12 °C were studied at 1400 and 1530 degreedays, in the freshwater phase of the life cycle. Anatomy and composition of the skeletal tissues of the vertebral column were analysed using Alizarin red S whole-mount staining and histological sections. Six regions, termed I-VI, are recognised in the vertebral column of specimens of both temperature groups. Postcranial vertebrae (region I) carry neural arches and parapophyses but lack ribs. Abdominal vertebrae (region II) carry neural arches and ribs that articulate with parapophyses. Elastic- and fibrohyaline cartilage and Sharpey's fibres connect the bone of the parapophyses to the bone of the ribs. In the transitional region (III) vertebrae carry neural arches and parapophyses change stepwise into haemal arches. Ribs decrease in size, anterior to posterior. Vestigial ribs remain attached to the haemal arches with Sharpey's fibres. Caudal vertebrae (region IV) carry neural and haemal arches and spines. Basidorsals and basiventrals are small and surrounded by cancellous bone. Preural vertebrae (region V) carry neural and haemal arches with modified neural and haemal spines to support the caudal fin. Ural vertebrae (region VI) carry hypurals and epurals that represent modified haemal and neural arches and spines, respectively. The postcranial and transitional vertebrae and their respective characters are usually recognised, but should be considered as regions within the vertebral column of teleosts

A new co conversion technology based on liquid/liquid extraction column

Energy Technology Data Exchange (ETDEWEB)

Borda, Gilles; Ode, Denis; Duhamet, Jean; Brackx, Emmanuelle [CEA Valrho - Marcoule - BP 17171 - 30207 Bagnols sur Ceze Cedex (France)

2009-06-15

The current objective of implementing 'direct' coprecipitation of uranium, plutonium and minor actinides for nuclear fuel re-fabrication leads to reconsider the (co)precipitation step, and more precisely its adaptability to new flowrates' specifications. Indeed, coprecipitation of a uranium fraction together with plutonium results in an appreciable increase in the process flow rates for this step. The technological impact of the increase in capacity could require the development of a different concept for a continuous device capable of ensuring the proposed process. A new type of device designed and patented by the CEA has been tested since 2007. The patent is for organic confinement in a pulsed column (PC) or Couette column (CC). The precipitation reaction between the oxalate complexing agent and a surrogate nitrate-cerium(II) or neodymium(III) alone, or coprecipitated uranium(IV) and cerium(III), occurs within an emulsion created in the device by these two phases flowing with a counter-current chemically inert organic phase (for example TPH) produced by the stirring action of the pulsator (PC) or the central rotor (CC). The precipitate is confined and thus does not form deposits on the vessel walls (which are also water-repellent); it flows downward by gravity and exits the column continuously into a settling tank. This paper describes the recent results obtained with this new technology for precipitation of Ce and Nd and coprecipitation of U + Ce in pulsed column and Couette column. It describes a first modeling allowing further extrapolation of this device to high capacities. (authors)

[Lateral column lengthening osteotomy of calcaneus].

Science.gov (United States)

Hintermann, B

2015-08-01

Lengthening of the lateral column for adduction of forefoot and restoration of the medial arch. Stabilization of the ankle joint complex. Supple flatfoot deformity (posterior tibial tendon dysfunction stage II). Instability of the medial ankle joint complex (superficial deltoid and spring ligament). Posttraumatic valgus and pronation deformity of the foot. Rigid flatfoot deformity (posterior tibial tendon dysfunction stage III and IV). Talocalcaneal and naviculocalcaneal coalition. Osteoarthritis of calcaneocuboid joint. Exposition of calcaneus at sinus tarsi. Osteotomy through sinus tarsi and widening until desired correction of the foot is achieved. Insertion of bone graft. Screw fixation. Immobilization in a cast for 6 weeks. Weight-bearing as tolerated from the beginning. In the majority of cases, part of hindfoot reconstruction. Reliable and stable correction. Safe procedure with few complications.

HOT GAS LINES IN T TAURI STARS

International Nuclear Information System (INIS)

Ardila, David R.; Herczeg, Gregory J.; Gregory, Scott G.; Hillenbrand, Lynne A.; Ingleby, Laura; Bergin, Edwin; Bethell, Thomas; Calvet, Nuria; France, Kevin; Brown, Alexander; Edwards, Suzan; Johns-Krull, Christopher; Linsky, Jeffrey L.; Yang, Hao; Valenti, Jeff A.; Abgrall, Hervé; Alexander, Richard D.; Brown, Joanna M.; Espaillat, Catherine; Hussain, Gaitee

2013-01-01

For Classical T Tauri Stars (CTTSs), the resonance doublets of N V, Si IV, and C IV, as well as the He II 1640 Å line, trace hot gas flows and act as diagnostics of the accretion process. In this paper we assemble a large high-resolution, high-sensitivity data set of these lines in CTTSs and Weak T Tauri Stars (WTTSs). The sample comprises 35 stars: 1 Herbig Ae star, 28 CTTSs, and 6 WTTSs. We find that the C IV, Si IV, and N V lines in CTTSs all have similar shapes. We decompose the C IV and He II lines into broad and narrow Gaussian components (BC and NC). The most common (50%) C IV line morphology in CTTSs is that of a low-velocity NC together with a redshifted BC. For CTTSs, a strong BC is the result of the accretion process. The contribution fraction of the NC to the C IV line flux in CTTSs increases with accretion rate, from ∼20% to up to ∼80%. The velocity centroids of the BCs and NCs are such that V BC ∼> 4 V NC , consistent with the predictions of the accretion shock model, in at most 12 out of 22 CTTSs. We do not find evidence of the post-shock becoming buried in the stellar photosphere due to the pressure of the accretion flow. The He II CTTSs lines are generally symmetric and narrow, with FWHM and redshifts comparable to those of WTTSs. They are less redshifted than the CTTSs C IV lines, by ∼10 km s –1 . The amount of flux in the BC of the He II line is small compared to that of the C IV line, and we show that this is consistent with models of the pre-shock column emission. Overall, the observations are consistent with the presence of multiple accretion columns with different densities or with accretion models that predict a slow-moving, low-density region in the periphery of the accretion column. For HN Tau A and RW Aur A, most of the C IV line is blueshifted suggesting that the C IV emission is produced by shocks within outflow jets. In our sample, the Herbig Ae star DX Cha is the only object for which we find a P-Cygni profile in the C IV

Self-assembled GaN nano-column grown on Si(111) substrate using Au+Ga alloy seeding method by metalorganic chemical vapor deposition

International Nuclear Information System (INIS)

Shim, Byung-Young; Ko, Eun-A; Song, Jae-Chul; Kang, Dong-Hun; Kim, Dong-Wook; Lee, In-Hwan; Kannappan, Santhakumar; Lee, Cheul-Ro

2007-01-01

Single-crystal GaN nano-column arrays were grown on Au-coated silicon (111) substrate by Au-Ga alloy seeding method using metalorganic chemical vapor deposition (MOCVD). The nano-column arrays were studied as a function of growth parameters and Au thin film thickness. The diameter and length of the as-grown nano-column vary from 100 to 500 nm and 4 to 6 μm, respectively. The surface morphology and optical properties of the nano-columns were investigated using scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), cathodoluminescence (CL) and photoluminescence (PL). The Au+Ga alloy droplets were found to be uniformly distributed on silicon surface. Further, SEM image reveals a vertical growth and cylindrical in shape GaN nano-column. The chemical composition of the nano-column, which composed of gallium and nitrogen ions, was estimated by EDX. CL reveals a strong band edge emission from the GaN nano-column. PL spectra show a peak at 365.7 nm with a full-width half maximum (FWHM) of 65 meV which indicates good optical quality GaN nano-column with low dislocation density. Our results suggest that single crystal GaN nano-column can be grown on Au+Ga alloy on silicon substrate with a low dislocation density for better device performances. (author)

PECVD SiO2 dielectric for niobium Josephson IC process

International Nuclear Information System (INIS)

Lee, S.Y.; Nandakumar, V.; Murdock, B.; Hebert, D.

1991-01-01

PECVD SiO 2 dielectric has been evaluated as an insulator for a Nb-based, all-refractory Josephson integrated circuit process. First, the properties of PECVD SiO 2 films were measured and compared with those of evaporated SiO films. Second, the PECVD SiO 2 dielectric film was used in our Nb-based Josephson integrated circuit process. The main problem was found to be the deterioration of the critical temperature of the superconducting niobium adjacent to the SiO 2 . The cause and a solution of the problem were investigated. Finally, a Josephson integrated sampler circuit was fabricated and tested. This paper shows acceptable junction I-V characteristics and a measured time resolution of a 4.9 ps pulse in liquid helium

Contributions to reversed-phase column selectivity: III. Column hydrogen-bond basicity.

Science.gov (United States)

Carr, P W; Dolan, J W; Dorsey, J G; Snyder, L R; Kirkland, J J

2015-05-22

Column selectivity in reversed-phase chromatography (RPC) can be described in terms of the hydrophobic-subtraction model, which recognizes five solute-column interactions that together determine solute retention and column selectivity: hydrophobic, steric, hydrogen bonding of an acceptor solute (i.e., a hydrogen-bond base) by a stationary-phase donor group (i.e., a silanol), hydrogen bonding of a donor solute (e.g., a carboxylic acid) by a stationary-phase acceptor group, and ionic. Of these five interactions, hydrogen bonding between donor solutes (acids) and stationary-phase acceptor groups is the least well understood; the present study aims at resolving this uncertainty, so far as possible. Previous work suggests that there are three distinct stationary-phase sites for hydrogen-bond interaction with carboxylic acids, which we will refer to as column basicity I, II, and III. All RPC columns exhibit a selective retention of carboxylic acids (column basicity I) in varying degree. This now appears to involve an interaction of the solute with a pair of vicinal silanols in the stationary phase. For some type-A columns, an additional basic site (column basicity II) is similar to that for column basicity I in primarily affecting the retention of carboxylic acids. The latter site appears to be associated with metal contamination of the silica. Finally, for embedded-polar-group (EPG) columns, the polar group can serve as a proton acceptor (column basicity III) for acids, phenols, and other donor solutes. Copyright © 2015 Elsevier B.V. All rights reserved.

Ion induced intermixing and consequent effects on the leakage currents in HfO{sub 2}/SiO{sub 2}/Si systems

Energy Technology Data Exchange (ETDEWEB)

Manikanthababu, N.; Saikiran, V.; Pathak, A.P.; Rao, S.V.S.N. [University of Hyderabad, School of Physics, Hyderabad (India); Chan, T.K.; Vajandar, S.; Osipowicz, T. [National University of Singapore, Department of Physics, Centre for Ion Beam Applications (CIBA), Singapore (Singapore)

2017-05-15

Atomic layer deposited (ALD) samples with layer stacks of HfO{sub 2} (3 nm)/SiO{sub 2} (0.7 nm)/Si were subjected to 120 MeV Au ion irradiation at different fluences to study intermixing effects across the HfO{sub 2}/SiO{sub 2} interface. High-resolution Rutherford backscattering spectrometry (HRBS) and X-ray reflectivity (XRR) measurements confirm an increase in the interlayer thickness as a result of SHI induced intermixing effects. Current-voltage (I-V) measurements reveal an order of magnitude difference in the leakage current density between the pristine and irradiated samples. This can be explained by considering the increased physical thickness of interlayer (HfSiO). Furthermore, the samples were subjected to rapid thermal annealing (RTA) process to analyze annealing kinetics. (orig.)

Study on Formation Mechanism of Fayalite (Fe2SiO4) by Solid State Reaction in Sintering Process

Science.gov (United States)

Wang, Zhongbing; Peng, Bing; Zhang, Lifeng; Zhao, Zongwen; Liu, Degang; Peng, Ning; Wang, Dawei; He, Yinghe; Liang, Yanjie; Liu, Hui

2018-04-01

The sintering behaviors among SiO2, FeS and Fe3O4 were detected to reveal the formation mechanism of Fe2SiO4. The results indicated that the formation mechanism is divided into five steps: (1) migration of O2- induced by S2- under a reducing atmosphere; (2) formation of Fe3O4- β ; (3) migration of Fe(II) into a ferrite cluster structure to gain oxygen and form Fe3- x O4; (4) Fe(II) invaded the silicon atomic position and released Si(IV); and (5) formation of the stable structure of Fe2SiO4 through chemical diffusion between cations of Fe(II) and Si(IV). These findings can provide theoretical support for controlling the process of the recovery of valuable metals in copper slag through the combined roasting modification-magnetic separation process.

Unidirectional solidification of a Nbss/Nb5Si3 in-situ composite

International Nuclear Information System (INIS)

Guo, X.P.; Ding, X.; Zhang, J.; Fu, H.Z.; Guan, P.; Kusabiraki, K.

2005-01-01

The directionally solidified specimens of Nb-13.52 Si-22.60 Ti-6.88 Hf-2.54 Cr-2.24 Al alloy were prepared in an electron beam floating zone melting furnace at the withdrawing rate of 0.1, 0.3, 0.6, 1.0, 2.4 and 6.0 mm/min. All the primary Nb solid solution (Nb ss ) columns, Nb ss + (Nb) 3 Si/(Nb) 5 Si 3 eutectic colonies and divorced (Nb) 3 Si/(Nb) 5 Si 3 plates or chains align well along the longitudinal axis of the specimens. With increasing of the withdrawing rate, the microstructure is gradually refined, and the amount of Nb ss + (Nb) 3 Si/(Nb) 5 Si 3 eutectic colonies increases. Both the room temperature ultimate tensile strength σ b and fracture toughness K Q are improved for the directionally solidified specimens. The tensile fracture occurs in a cleavage way. (orig.)

Irradiation damages in Ti{sub 3}SiC{sub 2}; Dommages d'irradiation dans Ti{sub 3}SiC{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Nappe, J.C.; Grosseau, Ph. [Ecole Nationale Superieure des Mines, Centre SPIN, Lab. PMMC et LPMG UMR CNRS 5148, 42 - Saint-Etienne (France); Guilhot, B. [Ecole Nationale Superieure des Mines, Centre CIS, 42 - Saint-Etienne (France); Audubert, F.; Beauvy, M. [CEA Cadarache, 13 - Saint-Paul-lez-Durance (France). Dept. d' Etudes des Combustibles; Iacconi, Ph.; Benabdesselam, M. [Nice Univ. - Sophia Antipolis, Lab. LPES-CRESA, 06 (France)

2007-07-01

Carbides, by their remarkable properties, are considered as possible materials (fuel cans) in reactor of generation IV. Among those studied, Ti{sub 3}SiC{sub 2} is particularly considered because it joins both the ceramics and metals properties. Nevertheless, its behaviour under irradiation is not known. Characterizations have been carried out on samples irradiated at 75 MeV krypton ions. They have revealed that TiO{sub 2} (formed at the surface of Ti{sub 3}SiC{sub 2}) is pulverized by the irradiation and that the crystal lattice of Ti{sub 3}SiC{sub 2} dilates with c. (O.M.)

Procedure to derive analytical models for microwave noise performances of Si/SiGe:C and InP/InGaAs heterojunction bipolar transistors

International Nuclear Information System (INIS)

Ramirez-Garcia, E; Enciso-Aguilar, M A; Aniel, F P; Zerounian, N

2013-01-01

We present a useful procedure to derive simplified expressions to model the minimum noise factor and the equivalent noise resistance of Si/SiGe:C and InP/InGaAs heterojunction bipolar transistors (HBTs). An acceptable agreement between models and measurements at operation frequencies up to 18 GHz and at several bias points is demonstrated. The development procedure includes all the significant microwave noise sources of the HBTs. These relations should be useful to model F min and R n for state-of-the-art IV-IV and III–V HBTs. The method is the first step to derive noise analyses formulas valid for operation frequencies near the unitary current gain frequency (f T ); however, to achieve this goal a necessary condition is to have access to HFN measurements up to this frequency regime. (paper)

JCE Feature Columns

Science.gov (United States)

Holmes, Jon L.

1999-05-01

The Features area of JCE Online is now readily accessible through a single click from our home page. In the Features area each column is linked to its own home page. These column home pages also have links to them from the online Journal Table of Contents pages or from any article published as part of that feature column. Using these links you can easily find abstracts of additional articles that are related by topic. Of course, JCE Online+ subscribers are then just one click away from the entire article. Finding related articles is easy because each feature column "site" contains links to the online abstracts of all the articles that have appeared in the column. In addition, you can find the mission statement for the column and the email link to the column editor that I mentioned above. At the discretion of its editor, a feature column site may contain additional resources. As an example, the Chemical Information Instructor column edited by Arleen Somerville will have a periodically updated bibliography of resources for teaching and using chemical information. Due to the increase in the number of these resources available on the WWW, it only makes sense to publish this information online so that you can get to these resources with a simple click of the mouse. We expect that there will soon be additional information and resources at several other feature column sites. Following in the footsteps of the Chemical Information Instructor, up-to-date bibliographies and links to related online resources can be made available. We hope to extend the online component of our feature columns with moderated online discussion forums. If you have a suggestion for an online resource you would like to see included, let the feature editor or JCE Online (jceonline@chem.wisc.edu) know about it. JCE Internet Features JCE Internet also has several feature columns: Chemical Education Resource Shelf, Conceptual Questions and Challenge Problems, Equipment Buyers Guide, Hal's Picks, Mathcad

A first-principles study of group IV and VI atoms doped blue phosphorene

Science.gov (United States)

Bai, Ruimin; Chen, Zheng; Gou, Manman; Zhang, Yixin

2018-02-01

Using first-principles calculations, we have systematically investigated the structural, electronic and magnetic properties of blue phosphorene doped by group IV and VI atoms, including C, Si, Ge, Sn, O, S, Se and Te. All the doped systems are energetically stable. Only C, Si, Ge and O-substituted systems show the characteristics of spin polarization and the magnetic moments are all 1.0 μB. Moreover, we found that C, Si, Ge and O doped systems are indirect bandgap semiconductors, while Sn, S, Se and Te doped systems present metallic property. These results show that blue phosphorene can be used prospectively in optoelectronic and spintronic devices.

ANR Corpus architecturae religiosae europeae [CARE]saec. IV-X

Directory of Open Access Journals (Sweden)

Christian Sapin

2010-10-01

Full Text Available Le projet ANR «Corpus des monuments religieux antérieurs à l’an Mil» [Corpus architecturae religiosae europeae/CARE – IV-X saec.] a débuté en janvier 2008. Il représente l’apport de la France à un programme international, initié en 2002 par l’IRCLAMA de Zagreb (Croatie . Ce corpus a pour objectif de recenser les édifices religieux d’Europe entre le IVe siècle et le tout début du XIe siècle. Il regroupe déjà l’Italie, l’Espagne, la Croatie, l’Europe centrale et demain, probablement, l’Irlande...

Location of trapped charge in aluminum-implanted SiO2

International Nuclear Information System (INIS)

DiMaria, D.J.; Young, D.R.; Hunter, W.R.; Serrano, C.M.

1978-01-01

The position of the centroid of electrons trapped on sites resulting from aluminum implantation into SiO 2 is measured by using the photo I-V technique for energies from 15 to 40 keV, oxide thicknesses from 49 to 140 nm, and post-implant annealing temperature from 600 to 1050 0 C in N 2 for 30 min. The centroid of the trapped electrons is found to be identical to that of the implanted aluminum from SIMS measurements, regardless of annealing temperature from 600 to 1050 0 C, and located closer (by less than 9 nm) to the Al--SiO 2 interface than predicted from the Lindhard-Scharff-Schott (LSS) calculations of Gibbons, Johnson, and Mylroie. Comparison of centroids determined from photo I-V and SIMS measurements as a function of SiO 2 thickness also implies that the distributions of the ions and negative trapped charge are the same. The trapping behavior of these sites is discussed in the accompanying paper by Young et al

A mononuclear uranium(IV) single-molecule magnet with an azobenzene radical ligand

Energy Technology Data Exchange (ETDEWEB)

Antunes, Maria A.; Coutinho, Joana T.; Santos, Isabel C.; Marcalo, Joaquim; Almeida, Manuel; Pereira, Laura C.J. [C" 2TN, Instituto Superior Tecnico, Universidade de Lisboa, Bobadela (Portugal); Baldovi, Jose J.; Gaita-Arino, Alejandro; Coronado, Eugenio [Instituto de Ciencia Molecular, Universitat de Valencia, Paterna (Spain)

2015-12-01

A tetravalent uranium compound with a radical azobenzene ligand, namely, [{(SiMe_2NPh)_3-tacn}U{sup IV}(η{sup 2}-N{sub 2}Ph{sub 2{sup .}})] (2), was obtained by one-electron reduction of azobenzene by the trivalent uranium compound [U{sup III}{(SiMe_2NPh)_3-tacn}] (1). Compound 2 was characterized by single-crystal X-ray diffraction and {sup 1}H NMR, IR, and UV/Vis/NIR spectroscopy. The magnetic properties of 2 and precursor 1 were studied by static magnetization and ac susceptibility measurements, which for the former revealed single-molecule magnet behaviour for the first time in a mononuclear U{sup IV} compound, whereas trivalent uranium compound 1 does not exhibit slow relaxation of the magnetization at low temperatures. A first approximation to the magnetic behaviour of these compounds was attempted by combining an effective electrostatic model with a phenomenological approach using the full single-ion Hamiltonian. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Synthesis of focusing-and-deflection columns

International Nuclear Information System (INIS)

Szilagyi, M.; Mui, P.H.

1995-01-01

Szilagyi and Szep have demonstrated that focusing lenses of high performances can be constructed from a column of circular plate electrodes. Later, Szilagyi modified that system to include dipole, quadrupole, and octupole components by partitioning each plate into eight equal sectors. It has already been shown that the additional quadrupole components can indeed bring about substantial improvements in the focusing of charged particle beams. In this article, that design procedure is expanded to construct columns capable of both focusing and deflecting particle beams by just introducing additional dipole components. In this new design, the geometry of the system remains unchanged. The only extra complication is the demand for more individual controls of the sector voltages. Two sample designs, one for negative ions and one for electrons, are presented showing that in both cases a ±2.3 mrad diverging beam can be focused down to a spot of less than 50 nm in radius over a scanning circular area of radius 0.25 mm. The details of the two systems are given in Sec. IV along with the source conditions. The performance of the negative ion system is found to be comparable to the published data. For the relativistic electron system, the interaction of individual components to reduce various aberrations is investigated. copyright 1995 American Vacuum Society

Special quasirandom structures for binary/ternary group IV random alloys

KAUST Repository

Chroneos, Alexander I.

2010-06-01

Simulation of defect interactions in binary/ternary group IV semiconductor alloys at the density functional theory level is difficult due to the random distribution of the constituent atoms. The special quasirandom structures approach is a computationally efficient way to describe the random nature. We systematically study the efficacy of the methodology and generate a number of special quasirandom cells for future use. In order to demonstrate the applicability of the technique, the electronic structures of E centers in Si1-xGex and Si1-x -yGexSny alloys are discussed for a range of nearest neighbor environments. © 2010 Elsevier B.V. All rights reserved.

Engineering design of the Aries-IV gaseous divertor

International Nuclear Information System (INIS)

Hasan, M.Z.; Najmabadi, F.; Sharafat, S.

1994-01-01

ARIES-IV is a conceptual, D-T burning, steady-state tokamak fusion reactor producing 1000 MWe net. It operates in the second plasma stability regime. The structural material is SiC composite and the primary coolant is helium at 10MPa base pressure. ARIES-IV uses double-null divertors for particle control. Total thermal power recovered from the divertors is 425MW, which is 16% of the total reactor thermal power. Among the desirable goals of divertor design were to avoid the use of tungsten and to use the same structural material and primary coolant as in the blanket design. In order to reduce peak heat flux, the innovative gaseous divertor has been used in ARIES-IV. A gaseous divertor reduces peak heat flux by increasing the surface area and by distributing particle and radiation energy more uniformly. Another benefit of gaseous divertor is the reduction of plasma temperature in the divertor chamber, so that material erosion due to sputtering, can be diminished. This makes the use of low-Z material possible in a gaseous divertor

Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells.

Science.gov (United States)

Di, Dawei; Perez-Wurfl, Ivan; Gentle, Angus; Kim, Dong-Ho; Hao, Xiaojing; Shi, Lei; Conibeer, Gavin; Green, Martin A

2010-08-01

As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide (SiO(2)) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been fabricated. The total thickness of the solar cell material is 420 nm. The cells contain 4 nm diameter Si quantum dots. The impacts of post-metallisation treatments such as phosphoric acid (H(3)PO(4)) etching, nitrogen (N(2)) gas anneal and forming gas (Ar: H(2)) anneal on the cells' electrical and photovoltaic properties are investigated. The Si QD solar cells studied in this work have achieved an open circuit voltage of 410 mV after various processes. Parameters extracted from dark I-V, light I-V and circular transfer length measurement (CTLM) suggest limiting mechanism in the Si QD solar cell operation and possible approaches for further improvement.

I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor.

Science.gov (United States)

Luongo, Giuseppe; Giubileo, Filippo; Genovese, Luca; Iemmo, Laura; Martucciello, Nadia; Di Bartolomeo, Antonio

2017-06-27

We study the effect of temperature and light on the I-V and C-V characteristics of a graphene/silicon Schottky diode. The device exhibits a reverse-bias photocurrent exceeding the forward current and achieves a photoresponsivity as high as 2.5 A / W . We show that the enhanced photocurrent is due to photo-generated carriers injected in the graphene/Si junction from the parasitic graphene/SiO₂/Si capacitor connected in parallel to the diode. The same mechanism can occur with thermally generated carriers, which contribute to the high leakage current often observed in graphene/Si junctions.

Column Liquid Chromatography.

Science.gov (United States)

Majors, Ronald E.; And Others

1984-01-01

Reviews literature covering developments of column liquid chromatography during 1982-83. Areas considered include: books and reviews; general theory; columns; instrumentation; detectors; automation and data handling; multidimensional chromatographic and column switching techniques; liquid-solid chromatography; normal bonded-phase, reversed-phase,…

Role of interface states on electron transport in a-Si:H/nc-Si:H multilayer structures

Science.gov (United States)

Yadav, Asha; Kumari, Juhi; Agarwal, Pratima

2018-05-01

In this paper we report, I-V characteristic of a-Si:H/nc-Si:H multilayer structures in lateral as well as transverse direction. In lateral geometry, where the interfaces are parallel to the direction of electronic transport, residual photo conductivity (persistent photoconductivity) is observed after the light was turned off. On the other hand, in transverse geometry, where interfaces are along the direction of electronic transport, the space charge limited currents are affected and higher density of states is obtained. The PPC was more in the structures where numbers of such interface were more. These results have been understood in terms of the charge carriers trapped at the interface, which influence the electronic transport.

Growth dynamics of SiGe nanowires by the Vapour Liquid Solid method and its impact on SiGe/Si axial heterojunction abruptness.

Science.gov (United States)

Pura, Jose Luis; Periwal, Priyanka; Baron, Thierry; Jimenez, Juan

2018-06-05

The Vapour Liquid Solid (VLS) method is by far the most extended procedure for bottom-up nanowire growth. This method also allows for the manufacture of nanowire axial heterojunctions in a straightforward way. To do this, during the growth process the precursor gases are switched on/off to obtain the desired change in the nanowire composition. Using this technique axially heterostructured nanowires can be grown, which are crucial for the fabrication of electronic and optoelectronic devices. SiGe/Si nanowires are compatible with Complementary Metal Oxide Semiconductor (CMOS) technology, this improves their versatility and the possibility of integration with the current electronic technologies. Abrupt heterointerfaces are fundamental for the development and correct operation of electronic and optoelectronic devices. Unfortunately, VLS growth of SiGe/Si heterojunctions does not provide abrupt transitions because of the high solubility of group IV semiconductors in Au, with the corresponding reservoir effect that precludes the growth of sharp interfaces. In this work, we studied the growth dynamics of SiGe/Si heterojunctions based on already developed models for VLS growth. A composition map of the Si-Ge-Au liquid alloy is proposed to better understand the impact of the growing conditions on the nanowire growth process and the heterojunction formation. The solution of our model provides heterojunction profiles in good agreement with experimental measurements. Finally, the in-depth study of the composition map provides a practical approach to reduce drastically the heterojunction abruptness by reducing the Si and Ge concentrations in the catalyst droplet. This converges with previous approaches that use catalysts aiming to reduce the solubility of the atomic species. This analysis opens new paths to reduce the heterojunction abruptness using Au catalysts, but the model can be naturally extended to other catalysts and semiconductors. © 2018 IOP Publishing Ltd.

Catalytic properties of RNA polymerases IV and V: accuracy, nucleotide incorporation and rNTP/dNTP discrimination.

Science.gov (United States)

Marasco, Michelle; Li, Weiyi; Lynch, Michael; Pikaard, Craig S

2017-11-02

All eukaryotes have three essential nuclear multisubunit RNA polymerases, abbreviated as Pol I, Pol II and Pol III. Plants are remarkable in having two additional multisubunit RNA polymerases, Pol IV and Pol V, which synthesize noncoding RNAs that coordinate RNA-directed DNA methylation for silencing of transposons and a subset of genes. Based on their subunit compositions, Pols IV and V clearly evolved as specialized forms of Pol II, but their catalytic properties remain undefined. Here, we show that Pols IV and V differ from one another, and Pol II, in nucleotide incorporation rate, transcriptional accuracy and the ability to discriminate between ribonucleotides and deoxyribonucleotides. Pol IV transcription is considerably more error-prone than Pols II or V, which may be tolerable in its synthesis of short RNAs that serve as precursors for siRNAs targeting non-identical members of transposon families. By contrast, Pol V exhibits high fidelity transcription, similar to Pol II, suggesting a need for Pol V transcripts to faithfully reflect the DNA sequence of target loci to which siRNA-Argonaute silencing complexes are recruited. © The Author(s) 2017. Published by Oxford University Press on behalf of Nucleic Acids Research.

Tribological Behavior of Si3N4/Ti3SiC2 Contacts Lubricated by Lithium-Based Ionic Liquids

Directory of Open Access Journals (Sweden)

Haizhong Wang

2014-01-01

Full Text Available The tribological performance of Si3N4 ball sliding against Ti3SiC2 disc lubricated by lithium-based ionic liquids (ILs was investigated using an Optimol SRV-IV oscillating reciprocating friction and wear tester at room temperature (RT and elevated temperature (100°C. Glycerol and the conventional imidazolium-based IL 1-hexyl-3-methylimidazolium bis(trifluoromethylsulfonylimide (L-F106 were used as references under the same experimental conditions. The results show that the lithium-based ILs had higher thermal stabilities than glycerol and lower costs associated with IL preparation than L-F106. The tribotest results show that the lithium-based ILs were effective in reducing the friction and wear of Si3N4/Ti3SiC2 contacts. [Li(urea]TFSI even produced better tribological properties than glycerol and L-F106 both at RT and 100°C. The SEM/EDS and XPS results reveal that the excellent tribological endurance of Si3N4/Ti3SiC2 contacts lubricated by lithium-based ILs was mainly attributed to the formation of surface protective films composed of various tribochemical products.

Characteristics of heterojunctions of amorphous LaAlO2.73 on Si

International Nuclear Information System (INIS)

Huang Yanhong; Zhao Kun; Lu Huibin; Jin Kuijuan; He Meng; Chen Zhenghao; Zhou Yueliang; Yang Guozhen

2006-01-01

High-quality heterojunctions consisting of n-type amorphous LaAlO 3- δ and p-type Si without Si interfacial layer were prepared using a thin film deposition system normally used for laser-molecular beam epitaxy. Good I-V rectifying property, ferroelectricity of interface enhancement and fast photovoltaic effect have been observed in the LaAlO 3- δ /Si p-n heterojunctions. We expect that the multifunctional properties of rectification, ferroelectricity and photovoltaic effect should open up new possibilities in device development and other applications

An improved analytical model of 4H-SiC MESFET incorporating bulk and interface trapping effects

Science.gov (United States)

Hema Lata Rao, M.; Narasimha Murty, N. V. L.

2015-01-01

An improved analytical model for the current—voltage (I-V) characteristics of the 4H-SiC metal semiconductor field effect transistor (MESFET) on a high purity semi-insulating (HPSI) substrate with trapping and thermal effects is presented. The 4H-SiC MESFET structure includes a stack of HPSI substrates and a uniformly doped channel layer. The trapping effects include both the effect of multiple deep-level traps in the substrate and surface traps between the gate to source/drain. The self-heating effects are also incorporated to obtain the accurate and realistic nature of the analytical model. The importance of the proposed model is emphasised through the inclusion of the recent and exact nature of the traps in the 4H-SiC HPSI substrate responsible for substrate compensation. The analytical model is used to exhibit DC I-V characteristics of the device with and without trapping and thermal effects. From the results, the current degradation is observed due to the surface and substrate trapping effects and the negative conductance introduced by the self-heating effect at a high drain voltage. The calculated results are compared with reported experimental and two-dimensional simulations (Silvaco®-TCAD). The proposed model also illustrates the effectiveness of the gate—source distance scaling effect compared to the gate—drain scaling effect in optimizing 4H-SiC MESFET performance. Results demonstrate that the proposed I-V model of 4H-SiC MESFET is suitable for realizing SiC based monolithic circuits (MMICs) on HPSI substrates.

I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor

OpenAIRE

Luongo, Giuseppe; Giubileo, Filippo; Genovese, Luca; Iemmo, Laura; Martucciello, Nadia; Di Bartolomeo, Antonio

2017-01-01

We study the effect of temperature and light on the I-V and C-V characteristics of a graphene/silicon Schottky diode. The device exhibits a reverse-bias photocurrent exceeding the forward current and achieves a photoresponsivity as high as 2.5 ? A / W . We show that the enhanced photocurrent is due to photo-generated carriers injected in the graphene/Si junction from the parasitic graphene/SiO2/Si capacitor connected in parallel to the diode. The same mechanism can occur with thermally genera...

Spectrographic determination of impurities in ammonium bifluoride. IV.Study of the processes of vaporization, transport and excitation of the elements Fe, Mn, Mo, Ni, Pb and Si

International Nuclear Information System (INIS)

Alduan, F.A.; Capdevila, C.; Roca, M.

1981-01-01

The influences of the processes of vaporization, transport and excitation on the shape of the volatilization-excitation curves and on the values of the spectra-line intensities have been investigated in a method for the spectrographic determination of Fe, Mn, Mo, Ni, Pb and Si in ammonium bifluoride samples by direct current arc Ga 2 O 3 , GeO 2 , MgO and ZnO. The reaction products in the electrode cavity have been identified by X-ray powder diffraction analysis and the porcentages of vaporized and diffused element evaluated through analysis by total-burning spectrographic methods. In addition, the values of both the number of particles entering the discharge column and the transport efficiencies have been calculated. Thus, the origin of most observed differences has been explained. (author)

Optical and electrical properties of Si-nanocrystals ion beam synthesized in SiO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Garrido, B. E-mail: blas@el.ub.es; Lopez, M.; Perez-Rodriguez, A.; Garcia, C.; Pellegrino, P.; Ferre, R.; Moreno, J.A.; Morante, J.R.; Bonafos, C.; Carrada, M.; Claverie, A.; Torre, J. de la; Souifi, A

2004-02-01

We review in this paper our recent results on the correlation between the structural and the optoelectronic properties of Si nano crystals (Si-nc) embedded in SiO{sub 2}. We describe as well the development of both materials and technology approaches that have allowed us to successfully produce efficient and reliable LEDs by using only CMOS processes. Si-nc were synthesised in SiO{sub 2} by ion implantation plus annealing and display average diameters from 2.5 to 6 nm, as measured by electron microscopy. By varying the annealing time in a large scale we have been able to track the nucleation, pure growth and Ostwald ripening stages of the nanocrystal population. The most efficient structures have Si-ncs with average size of 3 nm and densities of about 10{sup 19} cm{sup -3}. We have estimated band-gap energies, lifetimes (20-200 {mu}s) and absorption cross-sections (10{sup -15}-10{sup -16} cm{sup 2}) as a function of size and surface passivation. Based on these results, we propose a mechanism for exciton recombination based on the strong coupling of excitons with the heterointerfaces. From highly luminescent Si-nc, LEDs consisting of MOS capacitors were fabricated. Stable red electroluminescence has been obtained at room temperature and the I-V characteristics prove that the current is related to a pure tunnelling process. Fowler-Nordheim injection is not observed during light emission for electric fields below 5 MV/cm. Thus, hot carrier injection is avoided and efficient and reliable devices are obtained.

Ion beam synthesis and characterization of metastable group-IV alloy semiconductors

Energy Technology Data Exchange (ETDEWEB)

Kobayashi, Naoto; Hasegawa, Masataka; Hayashi, Nobuyuki; Makita, Yunosuke; Shibata, Hajime [Electrotechnical Lab., Tsukuba, Ibaraki (Japan); Katsumata, Hiroshi; Uekusa, Shin-ichiro

1997-03-01

New Group-IV metastable alloy semiconductors and their heterostructures based on combinations of C-Si-Ge-Sn are recently attracting interest because of feasible new electronic and optoelectronic application in Si-technology and here research works on synthesis and characterization of the epitaxial heterostructures of Si-C, Si-Sn on Si fabricated by ion implantation together either with ion-beam-induced epitaxial crystallization (IBIEC) or solid phase epitaxial growth (SPEG) have been investigated. Formations of layers of Si{sub 1-y}C{sub y} (y=0.014 at peak concentration) on Si(100) have been performed by high-dose implantation of 17 keV C ions and successive IBIEC with 400 keV Ar or Ge ion bombardments at 300-400degC or SPEG up to 750degC. Crystalline growth by IBIEC has shown a lower growth rate in Si{sub 1-y}C{sub y}/Si than in intrinsic Si due mainly to the strain existence, which was observed by the X-ray diffraction (XRD) measurements. Photoluminescence(PL) measurements have revealed I{sub 1} or G line emissions that are relevant to small vacancy clusters or C pair formation, respectively. The crystalline growth of Si{sub 1-z}Sn{sub z} layers by 110 keV {sup 120}Sn ion implantation (z=0.029 and z=0.058 at peak concentration) into Si(100) followed either by IBIEC or by SPEG has been also investigated. PL emission from both IBIEC-grown and SPEG-grown samples with the lower Sn concentration has shown similar peaks to those by ion-implanted and annealed Si samples with intense I{sub 1} or I{sub 1}-related (Ar) peaks. Present results suggest that IBIEC has a feature for the non-thermal equilibrium fabrication of Si-C and Si-Sn alloy semiconductors. (J.P.N.)

Si/ZnO NANO STRUCTURED HETEROJUNCTIONS BY APCVD METHOD

Directory of Open Access Journals (Sweden)

M. Maleki

2015-12-01

Full Text Available In this paper, polycrystalline pure zinc oxide nano structured thin films were deposited on two kinds of single crystal and polycrystalline of p and n type Si in three different substrate temperatures of 300, 400 and 500◦C by low cost APCVD method. Structural, electrical and optical properties of these thin films were characterized by X ray diffraction, two point probe method and UV visible spectrophotometer respectively. IV measurements of these heterojunctions showed that turn on voltage and series resistance will increase with increasing substrate temperature in polycrystalline Si, while in single crystal Si, turn on voltage will decrease. Although they are acceptable diodes, their efficiency as a heterojunction solar cell are so low

IUE observations of Si and C lines and comparison with non-LTE models

Science.gov (United States)

Kamp, L. W.

1982-01-01

Classical model atmosphere techniques are applied to analyze IUE spectra, and to determine abundances, effective temperatures and gravities. Measurements of the equivalent widths and other properties of the line profiles of 24 photospheric lines of Si II, Si III, Si IV, C II, C III and C IV are presented in the range of 1175-1725 A for seven B and two O stars. Observed line profiles are compared with theoretical profiles computed using non-LTE theory and models, and using line-blanketed model atmospheres. Agreement is reasonably good, although strong lines are calculated to be systematically stronger than those observed, while the reverse occurs for weak lines, and empirical profiles have smaller wings than theoretical profiles. It is concluded that the present theory of line formation when used with solar abundances, represents fairly well observed UV photospheric lines of silicon and carbon ions in the atmospheres of main sequence stars of types B5-O9.

Conjugate of biotin with silicon(IV) phthalocyanine for tumor-targeting photodynamic therapy.

Science.gov (United States)

Li, Ke; Qiu, Ling; Liu, Qingzhu; Lv, Gaochao; Zhao, Xueyu; Wang, Shanshan; Lin, Jianguo

2017-09-01

In order to improve the efficacy of photodynamic therapy (PDT), biotin was axially conjugated with silicon(IV) phthalocyanine (SiPc) skeleton to develop a new tumor-targeting photosensitizer SiPc-biotin. The target compound SiPc-biotin showed much higher binding affinity toward BR-positive (biotin receptor overexpressed) HeLa human cervical carcinoma cells than its precursor SiPc-pip. However, when the biotin receptors of HeLa cells were blocked by free biotin, >50% uptake of SiPc-biotin was suppressed, demonstrating that SiPc-biotin could selectively accumulate in BR-positive cancer cells via the BR-mediated internalization. The confocal fluorescence images further confirmed the target binding ability of SiPc-biotin. As a consequence of specificity of SiPc-biotin toward BR-positive HeLa cells, the photodynamic effect was also largely dependent on the BR expression level of HeLa cells. The photodynamic activities of SiPc-biotin against HeLa cells were dramatically reduced when the biotin receptors were blocked by the free biotin (IC 50 : 0.18μM vs. 0.46μM). It is concluded that SiPc-biotin can selectively damage BR-positive cancer cells under irradiation. Furthermore, the dark toxicity of SiPc-biotin toward human normal liver cell lines LO2 was much lower than that of its precursor SiPc-pip. The targeting photodynamic activity and low dark toxicity suggest that SiPc-biotin is a promising photosensitizer for tumor-targeting photodynamic therapy. Copyright © 2017 Elsevier B.V. All rights reserved.

Geochemical control on the reduction of U(VI) to mononuclear U(IV) species in lacustrine sediments

Science.gov (United States)

Stetten, L.; Mangeret, A.; Brest, J.; Seder-Colomina, M.; Le Pape, P.; Ikogou, M.; Zeyen, N.; Thouvenot, A.; Julien, A.; Alcalde, G.; Reyss, J. L.; Bombled, B.; Rabouille, C.; Olivi, L.; Proux, O.; Cazala, C.; Morin, G.

2018-02-01

Contaminated systems in which uranium (U) concentrations slightly exceed the geochemical background are of particular interest to identify natural processes governing U trapping and accumulation in Earth's surface environments. For this purpose, we examined the role of early diagenesis on the evolution of U speciation and mobility in sediments from an artificial lake located downstream from a former mining site. Sediment and pore water chemistry together with U and Fe solid state speciation were analyzed in sediment cores sampled down to 50 cm depth at four locations in the lake. These organic-rich sediments (∼12% organic C) exhibited U concentrations in the 40-80 mg kg-1 range. The sediment columns were anoxic 2-3 mm below the sediment-water interface and pore waters pH was circumneutral. Pore water chemistry profiles showed that organic carbon mineralization was associated with Fe and Mn reduction and was correlated with a decrease in dissolved U concentration with depth. Immobilization of U in the sediment was correlated with the reduction of U(VI) to U(IV) at depth, as shown by U LIII-edge XANES spectroscopic analysis. XANES and EXAFS spectroscopy at the Fe K-edge showed the reduction of structural Fe(III) to Fe(II) in phyllosilicate minerals with depth, coincident with U(VI) to U(IV) reduction. Thermodynamic modeling suggests that Fe(II) could act as a major reducing agent for U(VI) during early diagenesis of these sediments, leading to complete U reduction below ∼30 cm depth. Shell-by-shell and Cauchy-Wavelet analysis of U LIII-EXAFS spectra indicates that U(VI) and U(IV) are mainly present as mononuclear species bound to C, P or Si ligands. Chemical extractions confirmed that ∼60-80% of U was present as non-crystalline species, which emphasizes that such species should be considered when evaluating the fate of U in lacustrine environments and the efficiency of sediment remediation strategies.

Electrosynthesis of Ti5Si3, Ti5Si3/TiC, and Ti5Si3/Ti3SiC2 from Ti-Bearing Blast Furnace Slag in Molten CaCl2

Science.gov (United States)

Li, Shangshu; Zou, Xingli; Zheng, Kai; Lu, Xionggang; Chen, Chaoyi; Li, Xin; Xu, Qian; Zhou, Zhongfu

2018-04-01

Ti5Si3, Ti5Si3/TiC, and Ti5Si3/Ti3SiC2 have been electrochemically synthesized from the Ti-bearing blast furnace slag/TiO2 and/or C mixture precursors at a cell voltage of 3.8 V and 1223 K to 1273 K (950 °C to 1000 °C) in molten CaCl2. The pressed porous mixture pellets were used as the cathode, and a solid oxide oxygen-ion-conducting membrane (SOM)-based anode was used as the anode. The phase composition and morphologies of the cathodic products were systematically characterized. The final products possess a porous nodular microstructure due to the interconnection of particles. The variations of impurity elements, i.e., Ca, Mg, and Al, have been analyzed, and the result shows that Ca and Mg can be almost completely removed; however, Al cannot be easily removed from the pellet due to the formation of Ti-Al alloys during the electroreduction process. The electroreduction process has also been investigated by the layer-depended phase composition analysis of the dipped/partially reduced pellets to understand the detailed reaction process. The results indicate that the electroreduction process of the Ti-bearing blast furnace slag/TiO2 and/or C mixture precursors can be typically divided into four periods, i.e., (i) the decomposition of initial Ca(Mg,Al)(Si,Al)2O6, (ii) the reduction of Ti/Si-containing intermediate phases, (iii) the removal of impurity elements, and (iv) the formation of Ti5Si3, TiC, and Ti3SiC2. It is suggested that the SOM-based anode process has great potential to be used for the direct and facile preparation of Ti alloys and composites from cheap Ti-containing ores.

Effect of strong-column weak-beam design provision on the seismic fragility of RC frame buildings

Science.gov (United States)

Surana, Mitesh; Singh, Yogendra; Lang, Dominik H.

2018-04-01

Incremental dynamic analyses are conducted for a suite of low- and mid-rise reinforced-concrete special moment-resisting frame buildings. Buildings non-conforming and conforming to the strong-column weak-beam (SCWB) design criterion are considered. These buildings are designed for the two most severe seismic zones in India (i.e., zone IV and zone V) following the provisions of Indian Standards. It is observed that buildings non-conforming to the SCWB design criterion lead to an undesirable column failure collapse mechanism. Although yielding of columns cannot be avoided, even for buildings conforming to a SCWB ratio of 1.4, the observed collapse mechanism changes to a beam failure mechanism. This change in collapse mechanism leads to a significant increase in the building's global ductility capacity, and thereby in collapse capacity. The fragility analysis study of the considered buildings suggests that considering the SCWB design criterion leads to a significant reduction in collapse probability, particularly in the case of mid-rise buildings.

The Fate and Transport of the SiO2 Nanoparticles in a Granular Activated Carbon Bed and Their Impact on the Removal of VOCs

Science.gov (United States)

Adsorption isotherm, adsorption kinetics and column breakthrough experiments evaluating trichloroethylene (TCE) adsorption onto granular activated carbon (GAC) were conducted in the presence and absence of silica nanoparticles (SiO2 NPs). Zeta potential of the SiO

On-Line 1D and 2D PLOT/LC-ESI-MS Using 10 μm i.d. Poly(styrene–divinylbenzene) Porous Layer Open Tubular (PLOT) Columns For Ultrasensitive Proteomic Analysis

Science.gov (United States)

Luo, Quanzhou; Yue, Guihua; Valaskovic, Gary A; Gu, Ye; Wu, Shiaw-Lin; Karger, Barry L.

2008-01-01

Following on our recent work, on-line one dimensional (1D) and two dimensional (2D) PLOT/LC-ESI-MS platforms using 3.2 m × 10 μm i.d. poly(styrenedivinylbenzene) (PS-DVB) porous layer open tubular (PLOT) columns have been developed to provide robust, high performance and ultrasensitive proteomic analysis. Using a PicoClear tee, the dead volume connection between a 50 μm i.d. PS-DVB monolithic microSPE column and the PLOT column was minimized. The microSPE/PLOT column assembly provided a separation performance similar to that obtained with direct injection onto the PLOT column at a mobile phase flow rate of 20 nL/min. The trace analysis potential of the platform was evaluated using an in-gel tryptic digest sample of a gel fraction (15 to 40 kDa) of a cervical cancer (SiHa) cell line. As an example of the sensitivity of the system, ∼2.5 ng of protein in 2 μL solution, an amount corresponding to 20 SiHa cells, was subjected to on-line microSPE-PLOT/LC-ESIMS/MS analysis using a linear ion trap MS. 237 peptides associated with 163 unique proteins were identified from a single analysis when using stringent criteria associated with a false positive rate less than 1% . The number of identified peptides and proteins increased to 638 and 343, respectively, as the injection amount was raised to ∼45 ng of protein, an amount corresponding to 350 SiHa cells. In comparison, only 338 peptides and 231 unique proteins were identified (false positive rate again less than 1%) from 750 ng of protein from the identical gel fraction, an amount corresponding to 6000 SiHa cells, using a typical 15 cm × 75 μm i.d. packed capillary column. The greater sensitivity, higher recovery, and higher resolving power of the PLOT column resulted in the increased number of identifications from only ∼5% of the injected sample amount. The resolving power of the microSPE/PLOT assembly was further extended by 2D chromatography via combination of the high-efficiency reversed phase PLOT column

Column-Oriented Database Systems (Tutorial)

NARCIS (Netherlands)

D. Abadi; P.A. Boncz (Peter); S. Harizopoulos

2009-01-01

textabstractColumn-oriented database systems (column-stores) have attracted a lot of attention in the past few years. Column-stores, in a nutshell, store each database table column separately, with attribute values belonging to the same column stored contiguously, compressed, and densely packed, as

Resistance Switching Memory Characteristics of Si/CaF2/CdF2 Quantum-Well Structures Grown on Metal (CoSi2) Layer

Science.gov (United States)

Denda, Junya; Uryu, Kazuya; Watanabe, Masahiro

2013-04-01

A novel scheme of resistance switching random access memory (ReRAM) devices fabricated using Si/CaF2/CdF2/CaF2/Si quantum-well structures grown on metal CoSi2 layer formed on a Si substrate has been proposed, and embryonic write/erase memory operation has been demonstrated at room temperature. It has been found that the oxide-mediated epitaxy (OME) technique for forming the CoSi2 layer on Si dramatically improves the stability and reproducibility of the current-voltage (I-V) curve. This technology involves 10-nm-thick Co layer deposition on a protective oxide prepared by boiling in a peroxide-based solution followed by annealing at 550 °C for 30 min for silicidation in ultrahigh vacuum. A switching voltage of lower than 1 V, a peak current density of 32 kA/cm2, and an ON/OFF ratio of 10 have been observed for the sample with the thickness sequence of 0.9/0.9/2.5/0.9/5.0 nm for the respective layers in the Si/CaF2/CdF2/CaF2/Si structure. Results of surface morphology analysis suggest that the grain size of crystal islands with flat surfaces strongly affects the quality of device characteristics.

Nano-/micro metallic wire synthesis on Si substrate and their characterization

International Nuclear Information System (INIS)

Kaur, Jaskiran; Kaur, Harmanmeet; Singh, Surinder; Kanjilal, Dinakar; Chakarvarti, Shiv Kumar

2014-01-01

Nano-/micro wires of copper are grown on semiconducting Si substrate using the template method. It involves the irradiation of 8 um thick polymeric layer coated on Si with150 MeV Ni ion beam at a fluence of 2E8. Later, by using the simple technique of electrodeposition, copper nano-/micro wires were grown via template synthesis. Synthesized wires were morphologically characterized using SEM and electrical characterization was carried out by finding I-V plot

Controlling the size of InAs quantum dots on Si1-xGex/Si(0 0 1) by metalorganic vapor-phase epitaxy

International Nuclear Information System (INIS)

Kawaguchi, Kenichi; Ebe, Hiroji; Ekawa, Mitsuru; Sugama, Akio; Arakawa, Yasuhiko

2009-01-01

The formation of III-V InAs quantum dots (QDs) on group-IV Si 1-x Ge x /Si(0 0 1) was investigated by metalorganic vapor-phase epitaxy. Two types of QDs, round-shaped QDs and giant QDs elongated in the [1 1 0] or [1,-1,0] direction, were observed in a growth condition of low V/III ratios. An increase in the V/III ratio and AsH 3 preflow during the cooling process was found to suppress the formation of giant QDs. It was considered that replacing the H-stabilized SiGe surface with the As-stabilized surface was necessary for increasing the QD nucleation. The size and density of InAs QDs on SiGe were controllable as well as that on III-V semiconductor buffer layers, and InAs QDs with a density as high as 5 x 10 10 cm -2 were obtained.

Silica-based monolithic capillary columns modified by liposomes for characterization of analyte–liposome interactions by capillary liquid chromatography

Czech Academy of Sciences Publication Activity Database

Moravcová, Dana; Planeta, Josef; Wiedmer, S. K.

2013-01-01

Roč. 1317, SI (2013), s. 159-166 ISSN 0021-9673 R&D Projects: GA MV VG20112015021; GA ČR(CZ) GAP206/11/0138 Institutional support: RVO:68081715 Keywords : monolithic silica capillary column * immobilized liposomes * biomimicking stationary phase Subject RIV: CB - Analytical Chemistry, Separation Impact factor: 4.258, year: 2013

Synthesis of Cr-doped CaTiSiO5 ceramic pigments by spray drying

International Nuclear Information System (INIS)

Lyubenova, T. Stoyanova; Matteucci, F.; Costa, A.L.; Dondi, M.; Ocana, M.; Carda, J.

2009-01-01

Cr-doped CaTiSiO 5 was synthesized by spray drying and conventional ceramic method in order to assess its potential as ceramic pigment. The evolution of the phase composition with thermal treatment was investigated by X-ray powder diffraction (XRPD) and thermal analyses (DTA-TGA-EGA). Powder morphology and particle size distribution were analyzed by scanning electron microscopy (SEM) and laser diffraction, respectively. The color efficiency of pigments was evaluated by optical spectroscopy (UV-vis-NIR) and colorimetric analysis (CIE Lab). Results proved that spray drying is an efficient procedure to prepare highly reactive pigment precursors. The spray-dried powders consist of hollow spherical particles with aggregate size in the 1-10 μm range, developing a brown coloration. Optical spectra reveal the occurrence of Cr(III) and Cr(IV), both responsible for the brown color of this pigment. The former occupies the octahedral site of titanite, in substitution of Ti(IV), while the latter is located at the tetrahedral site, where replaces Si(IV)

Highly-Integrated CMOS Interface Circuits for SiPM-Based PET Imaging Systems.

Science.gov (United States)

Dey, Samrat; Lewellen, Thomas K; Miyaoka, Robert S; Rudell, Jacques C

2012-01-01

Recent developments in the area of Positron Emission Tomography (PET) detectors using Silicon Photomultipliers (SiPMs) have demonstrated the feasibility of higher resolution PET scanners due to a significant reduction in the detector form factor. The increased detector density requires a proportionally larger number of channels to interface the SiPM array with the backend digital signal processing necessary for eventual image reconstruction. This work presents a CMOS ASIC design for signal reducing readout electronics in support of an 8×8 silicon photomultiplier array. The row/column/diagonal summation circuit significantly reduces the number of required channels, reducing the cost of subsequent digitizing electronics. Current amplifiers are used with a single input from each SiPM cathode. This approach helps to reduce the detector loading, while generating all the necessary row, column and diagonal addressing information. In addition, the single current amplifier used in our Pulse-Positioning architecture facilitates the extraction of pulse timing information. Other components under design at present include a current-mode comparator which enables threshold detection for dark noise current reduction, a transimpedance amplifier and a variable output impedance I/O driver which adapts to a wide range of loading conditions between the ASIC and lines with the off-chip Analog-to-Digital Converters (ADCs).

Family of columns isospectral to gravity-loaded columns with tip force: A discrete approach

Science.gov (United States)

Ramachandran, Nirmal; Ganguli, Ranjan

2018-06-01

A discrete model is introduced to analyze transverse vibration of straight, clamped-free (CF) columns of variable cross-sectional geometry under the influence of gravity and a constant axial force at the tip. The discrete model is used to determine critical combinations of loading parameters - a gravity parameter and a tip force parameter - that cause onset of dynamic instability in the CF column. A methodology, based on matrix-factorization, is described to transform the discrete model into a family of models corresponding to weightless and unloaded clamped-free (WUCF) columns, each with a transverse vibration spectrum isospectral to the original model. Characteristics of models in this isospectral family are dependent on three transformation parameters. A procedure is discussed to convert the isospectral discrete model description into geometric description of realistic columns i.e. from the discrete model, we construct isospectral WUCF columns with rectangular cross-sections varying in width and depth. As part of numerical studies to demonstrate efficacy of techniques presented, frequency parameters of a uniform column and three types of tapered CF columns under different combinations of loading parameters are obtained from the discrete model. Critical combinations of these parameters for a typical tapered column are derived. These results match with published results. Example CF columns, under arbitrarily-chosen combinations of loading parameters are considered and for each combination, isospectral WUCF columns are constructed. Role of transformation parameters in determining characteristics of isospectral columns is discussed and optimum values are deduced. Natural frequencies of these WUCF columns computed using Finite Element Method (FEM) match well with those of the given gravity-loaded CF column with tip force, hence confirming isospectrality.

Distillation Column Flooding Predictor

Energy Technology Data Exchange (ETDEWEB)

George E. Dzyacky

2010-11-23

The Flooding Predictor™ is a patented advanced control technology proven in research at the Separations Research Program, University of Texas at Austin, to increase distillation column throughput by over 6%, while also increasing energy efficiency by 10%. The research was conducted under a U. S. Department of Energy Cooperative Agreement awarded to George Dzyacky of 2ndpoint, LLC. The Flooding Predictor™ works by detecting the incipient flood point and controlling the column closer to its actual hydraulic limit than historical practices have allowed. Further, the technology uses existing column instrumentation, meaning no additional refining infrastructure is required. Refiners often push distillation columns to maximize throughput, improve separation, or simply to achieve day-to-day optimization. Attempting to achieve such operating objectives is a tricky undertaking that can result in flooding. Operators and advanced control strategies alike rely on the conventional use of delta-pressure instrumentation to approximate the column’s approach to flood. But column delta-pressure is more an inference of the column’s approach to flood than it is an actual measurement of it. As a consequence, delta pressure limits are established conservatively in order to operate in a regime where the column is never expected to flood. As a result, there is much “left on the table” when operating in such a regime, i.e. the capacity difference between controlling the column to an upper delta-pressure limit and controlling it to the actual hydraulic limit. The Flooding Predictor™, an innovative pattern recognition technology, controls columns at their actual hydraulic limit, which research shows leads to a throughput increase of over 6%. Controlling closer to the hydraulic limit also permits operation in a sweet spot of increased energy-efficiency. In this region of increased column loading, the Flooding Predictor is able to exploit the benefits of higher liquid

Annular pulse column development studies

International Nuclear Information System (INIS)

Benedict, G.E.

1980-01-01

The capacity of critically safe cylindrical pulse columns limits the size of nuclear fuel solvent extraction plants because of the limited cross-sectional area of plutonium, U-235, or U-233 processing columns. Thus, there is a need to increase the cross-sectional area of these columns. This can be accomplished through the use of a column having an annular cross section. The preliminary testing of a pilot-plant-scale annular column has been completed and is reported herein. The column is made from 152.4-mm (6-in.) glass pipe sections with an 89-mm (3.5-in.) o.d. internal tube, giving an annular width of 32-mm (1.25-in.). Louver plates are used to swirl the column contents to prevent channeling of the phases. The data from this testing indicate that this approach can successfully provide larger-cross-section critically safe pulse columns. While the capacity is only 70% of that of a cylindrical column of similar cross section, the efficiency is almost identical to that of a cylindrical column. No evidence was seen of any non-uniform pulsing action from one side of the column to the other

Comparative performance evaluation of a new a-Si EPID that exceeds quad high-definition resolution.

Science.gov (United States)

McConnell, Kristen A; Alexandrian, Ara; Papanikolaou, Niko; Stathakis, Sotiri

2018-01-01

Electronic portal imaging devices (EPIDs) are an integral part of the radiation oncology workflow for treatment setup verification. Several commercial EPID implementations are currently available, each with varying capabilities. To standardize performance evaluation, Task Group Report 58 (TG-58) and TG-142 outline specific image quality metrics to be measured. A LinaTech Image Viewing System (IVS), with the highest commercially available pixel matrix (2688x2688 pixels), was independently evaluated and compared to an Elekta iViewGT (1024x1024 pixels) and a Varian aSi-1000 (1024x768 pixels) using a PTW EPID QC Phantom. The IVS, iViewGT, and aSi-1000 were each used to acquire 20 images of the PTW QC Phantom. The QC phantom was placed on the couch and aligned at isocenter. The images were exported and analyzed using the epidSoft image quality assurance (QA) software. The reported metrics were signal linearity, isotropy of signal linearity, signal-tonoise ratio (SNR), low contrast resolution, and high-contrast resolution. These values were compared between the three EPID solutions. Computed metrics demonstrated comparable results between the EPID solutions with the IVS outperforming the aSi-1000 and iViewGT in the low and high-contrast resolution analysis. The performance of three commercial EPID solutions have been quantified, evaluated, and compared using results from the PTW QC Phantom. The IVS outperformed the other panels in low and high-contrast resolution, but to fully realize the benefits of the IVS, the selection of the monitor on which to view the high-resolution images is important to prevent down sampling and visual of resolution.

Hepatic imaging in stage IV-S neuroblastoma

International Nuclear Information System (INIS)

Franken, E.A. Jr.; Smith, W.L.; Iowa Univ., Iowa City; Cohen, M.D.; Kisker, C.T.; Platz, C.E.

1986-01-01

Stage IV-S neuroblastoma describes a group of infants with tumor spread limited to liver, skin, or bone marrow. Such patients, who constitute about 25% of affected infants with neuroblastoma, may expect spontaneous tumor remission. We report 18 infants with Stage IV-S neuroblastoma, 83% of whom had liver involvement. Imaging investigations included Technetium 99m sulfur colloid scan, ultrasound, and CT. Two patterns of liver metastasis were noted: ill-defined nodules or diffuse tumor throughout the liver. Distinction of normal and abnormal liver with diffuse type metastasis could be quite difficult, particularly with liver scans. We conclude that patients with Stage IV-S neuroblastoma have ultrasound or CT examination as an initial workup, with nuclear medicine scans reserved for followup studies. (orig.)

Column-Oriented Database Systems (Tutorial)

OpenAIRE

Abadi, D.; Boncz, Peter; Harizopoulos, S.

2009-01-01

textabstractColumn-oriented database systems (column-stores) have attracted a lot of attention in the past few years. Column-stores, in a nutshell, store each database table column separately, with attribute values belonging to the same column stored contiguously, compressed, and densely packed, as opposed to traditional database systems that store entire records (rows) one after the other. Reading a subset of a table’s columns becomes faster, at the potential expense of excessive disk-head s...

Using NDACC column measurements of carbonyl sulfide to estimate its sources and sinks

Science.gov (United States)

Wang, Yuting; Marshall, Julia; Palm, Mathias; Deutscher, Nicholas; Roedenbeck, Christian; Warneke, Thorsten; Notholt, Justus; Baker, Ian; Berry, Joe; Suntharalingam, Parvadha; Jones, Nicholas; Mahieu, Emmanuel; Lejeune, Bernard; Hannigan, James; Conway, Stephanie; Strong, Kimberly; Campbell, Elliott; Wolf, Adam; Kremser, Stefanie

2016-04-01

Carbonyl sulfide (OCS) is taken up by plants during photosynthesis through a similar pathway as carbon dioxide (CO2), but is not emitted by respiration, and thus holds great promise as an additional constraint on the carbon cycle. It might act as a sort of tracer of photosynthesis, a way to separate gross primary productivity (GPP) from the net ecosystem exchange (NEE) that is typically derived from flux modeling. However the estimates of OCS sources and sinks still have significant uncertainties, which make it difficult to use OCS as a photosynthetic tracer, and the existing long-term surface-based measurements are sparse. The NDACC-IRWG measures the absorption of OCS in the atmosphere, and provides a potential long-term database of OCS total/partial columns, which can be used to evaluate OCS fluxes. We have retrieved OCS columns from several NDACC sites around the globe, and compared them to model simulation with OCS land fluxes based on the simple biosphere model (SiB). The disagreement between the measurements and the forward simulations indicates that (1) the OCS land fluxes from SiB are too low in the northern boreal region; (2) the ocean fluxes need to be optimized. A statistical linear flux model describing OCS is developed in the TM3 inversion system, and is used to estimate the OCS fluxes. We performed flux inversions using only NOAA OCS surface measurements as an observational constraint and with both surface and NDACC OCS column measurements, and assessed the differences. The posterior uncertainties of the inverted OCS fluxes decreased with the inclusion of NDACC data comparing to those using surface data only, and could be further reduced if more NDACC sites were included.

Nuclear reactor control column

International Nuclear Information System (INIS)

Bachovchin, D.M.

1982-01-01

The nuclear reactor control column comprises a column disposed within the nuclear reactor core having a variable cross-section hollow channel and containing balls whose vertical location is determined by the flow of the reactor coolant through the column. The control column is divided into three basic sections wherein each of the sections has a different cross-sectional area. The uppermost section of the control column has the greatest crosssectional area, the intermediate section of the control column has the smallest cross-sectional area, and the lowermost section of the control column has the intermediate cross-sectional area. In this manner, the area of the uppermost section can be established such that when the reactor coolant is flowing under normal conditions therethrough, the absorber balls will be lifted and suspended in a fluidized bed manner in the upper section. However, when the reactor coolant flow falls below a predetermined value, the absorber balls will fall through the intermediate section and into the lowermost section, thereby reducing the reactivity of the reactor core and shutting down the reactor

Column Selection for Biomedical Analysis Supported by Column Classification Based on Four Test Parameters.

Science.gov (United States)

Plenis, Alina; Rekowska, Natalia; Bączek, Tomasz

2016-01-21

This article focuses on correlating the column classification obtained from the method created at the Katholieke Universiteit Leuven (KUL), with the chromatographic resolution attained in biomedical separation. In the KUL system, each column is described with four parameters, which enables estimation of the FKUL value characterising similarity of those parameters to the selected reference stationary phase. Thus, a ranking list based on the FKUL value can be calculated for the chosen reference column, then correlated with the results of the column performance test. In this study, the column performance test was based on analysis of moclobemide and its two metabolites in human plasma by liquid chromatography (LC), using 18 columns. The comparative study was performed using traditional correlation of the FKUL values with the retention parameters of the analytes describing the column performance test. In order to deepen the comparative assessment of both data sets, factor analysis (FA) was also used. The obtained results indicated that the stationary phase classes, closely related according to the KUL method, yielded comparable separation for the target substances. Therefore, the column ranking system based on the FKUL-values could be considered supportive in the choice of the appropriate column for biomedical analysis.

Improvements in solvent extraction columns

International Nuclear Information System (INIS)

Aughwane, K.R.

1987-01-01

Solvent extraction columns are used in the reprocessing of irradiated nuclear fuel. For an effective reprocessing operation a solvent extraction column is required which is capable of distributing the feed over most of the column. The patent describes improvements in solvent extractions columns which allows the feed to be distributed over an increased length of column than was previously possible. (U.K.)

Thermodynamic data for predicting concentrations of Th(IV), U(IV), Np(IV), and Pu(IV) in geologic environments

Energy Technology Data Exchange (ETDEWEB)

Rai, Dhanpat; Roa, Linfeng; Weger, H.T.; Felmy, A.R. [Battelle, Pacific Northwest National Laboratory (PNNL) (United States); Choppin, G.R. [Florida State University (United States); Yui, Mikazu [Waste Isolation Research Division, Tokai Works, Japan Nuclear Cycle Development Inst., Tokai, Ibaraki (Japan)

1999-01-01

This report provides thermodynamic data for predicting concentrations of Th(IV), U(IV), Np(IV), and Pu(IV) in geologic environments, and contributes to an integration of the JNC chemical thermodynamic database, JNC-TDB (previously PNC-TDB), for the performance analysis of geological isolation system for high-level radioactive wastes. Thermodynamic data for the formation of complexes or compounds with hydroxide, chloride, fluoride, carbonate, nitrate, sulfate and phosphate are discussed in this report. Where data for specific actinide(IV) species was lacking, the data were selected based on chemical analogy to other tetravalent actinides. In this study, the Pitzer ion-interaction model is used to extrapolate thermodynamic constants to zero ionic strength at 25degC. (author)

Temperature-Dependent Electrical Characteristics of Au/Si3N4/4H n-SiC MIS Diode

Science.gov (United States)

Yigiterol, F.; Güllü, H. H.; Bayraklı, Ö.; Yıldız, D. E.

2018-03-01

Electrical characteristics of the Au/Si3N4/4H n-SiC metal-insulator-semiconductor (MIS) diode were investigated under the temperature, T , interval of 160-400 K using current-voltage (I-V), capacitance-voltage ( C {-} V ) and conductance-voltage ( G/ω {-} V ) measurements. Firstly, the Schottky diode parameters as zero-bias barrier height ( Φ_{B0} ) and ideality factor ( n ) were calculated according to the thermionic emission (TE) from forward bias I-V analysis in the whole working T . Experimental results showed that the values of Φ_{B0} were in increasing behavior with increasing T while n values decreased with inverse proportionality in n versus Φ_{{{{B}}0}} plot. Therefore, the non-ideal I-V behavior with inhomogeneous barrier height (BH) formation has been discussed under the assumption of Gaussian distribution (GD). From the GD of BHs, the mean BH was found to be about 1.40 eV with 0.1697 standard deviation and the modified Richardson constant A^{*} of this diode was obtained as 141.65 A/cm2 K2 in good agreement with the literature (the theoretical value of A^{*} is 137.21 A/cm2 K2). The relationship between Φ_{B0} and n showed an abnormal I-V behavior depending on T , and it was modeled by TE theory with GD of BH due to the effect in inhomogeneous BH at the interface. Secondly, according to Cheung's model, series resistance, R_{{S}} values were calculated in the T range of 160-400 K and these values were found to decrease with increasing T . Finally, the density of interface states, D_{{it}} was calculated and the T dependence of energy distribution of D_{{it}} profiles determined the forward I {-} V measurements by taking into account the bias dependence of the effective BH, Φ_{{e}} and n . D_{{it}} were also calculated according to the Hill-Coleman method from C {-} V and G/ω {-} V analysis. Furthermore, the variation of D_{{it}} as a function of frequency, f and T were determined.

Energy variable monoenergetic positron beam study of oxygen atoms in Czochralski grown Si

International Nuclear Information System (INIS)

Tanigawa, S.; Wei, L.; Tabuki, Y.; Nagai, R.; Takeda, E.

1992-01-01

A monoenergetic positron beam has been used to investigate the state of interstitial oxygen in Czochralski-grown Si with the coverage of SiO 2 (100 nm) and poly-Si (200 nm)/SiO 2 (100 nm), respectively. It was found that (i) the growth of SiO 2 gives rise to a strong Doppler broadening of positron annihilation radiations in the bulk of Si, (ii) such a broadening can be recovered to the original level by annealing at 450degC, by the removal of overlayers using chemical etching and long-term aging at room temperature, (iii) the film stress over the CZ-grown Si is responsible for the rearrangement of oxygen atoms in S and (iv) only tensile stress gives rise to the clustering of oxygen atoms. The observed broadening was assigned to arise from the positron trapping by oxygen interstitial clusters. It was concluded that film stress is responsible for the rearrangement of oxygen atoms in CZ-grown Si. (author)

( Anogeissus leiocarpus ) timber columns

African Journals Online (AJOL)

A procedure for designing axially loaded Ayin (Anogeissus leiocarpus) wood column or strut has been investigated. Instead of the usual categorization of columns into short, intermediate and slender according to the value of slenderness ratio, a continuous column formula representing the three categories was derived.

A Mini-BAL Outflow at 900 pc from the Central Source: VLT/X-shooter Observations

Science.gov (United States)

Xu, Xinfeng; Arav, Nahum; Miller, Timothy; Benn, Chris

2018-05-01

We determine the physical conditions and location of the outflow material seen in the mini-BAL quasar SDSS J1111+1437 (z = 2.138). These results are based on the analysis of a high S/N, medium-resolution VLT/X-shooter spectrum. The main outflow component spans the velocity range ‑1500 to ‑3000 km s‑1 and has detected absorption troughs from both high-ionization species: C IV, N V, O VI, Si IV, P V, and S IV; and low-ionization species: H I, C II, Mg II, Al II, Al III, Si II, and Si III. Measurements of these troughs allow us to derive an accurate photoionization solution for this absorption component: a hydrogen column density, {log}({N}{{H}})={21.47}-0.27+0.21 cm‑2 and ionization parameter, {log}({U}{{H}})=-{1.23}-0.25+0.20. Troughs produced from the ground and excited states of S IV combined with the derived {U}{{H}} value allow us to determine an electron number density of {log}({n}{{e}})={3.62}-0.11+0.09 cm‑3 and to obtain the distance of the ionized gas from the central source: R={880}-260+210 pc.

LIQUID-LIQUID EXTRACTION COLUMNS

Science.gov (United States)

Thornton, J.D.

1957-12-31

This patent relates to liquid-liquid extraction columns having a means for pulsing the liquid in the column to give it an oscillatory up and down movement, and consists of a packed column, an inlet pipe for the dispersed liquid phase and an outlet pipe for the continuous liquid phase located in the direct communication with the liquid in the lower part of said column, an inlet pipe for the continuous liquid phase and an outlet pipe for the dispersed liquid phase located in direct communication with the liquid in the upper part of said column, a tube having one end communicating with liquid in the lower part of said column and having its upper end located above the level of said outlet pipe for the dispersed phase, and a piston and cylinder connected to the upper end of said tube for applying a pulsating pneumatic pressure to the surface of the liquid in said tube so that said surface rises and falls in said tube.

The Nature of the Vela Supernova Remnant as Revealed by O VI and C IV Absorption

Science.gov (United States)

Lines, Nichols J.; Slavin, J.; Anderson, C.

2001-01-01

Highly ionized gas, in particular C IV and O VI, is produced in the interstellar medium in regions with hot (T approx. 10(exp 6) K) X-ray emitting gas and at the boundaries where hot gas and cooler (T approx. 10(exp 4) K) gas interact. Supernova remnant shocks produce most of the hot gas in the ISM and, if they are in the correct range of speeds, should produce observable quantities of C IV and O VI absorption. In turn, the column densities of these ions are potentially powerful diagnostics of the shock speed and interstellar environment in which the SNR is evolving. With the advent of FUSE, the power of this diagnostic technique is now available. We have FUSE data toward 8 stars behind the Vela SNR, and have developed a data reduction and analysis method that produces reasonably reliable O VI column densities, in spite of the complexities of the FUSE spectra in this region. In order to gain insight into the observational results, the Vela SNR evolution was modelled using Piecewise Parabolic Method numerical hydrodynamics code. The code is 1-D and incorporates non-equilibrium ionization, radiative cooling, thermal conduction and magnetic pressure.

A dynamic study on the sulfuric acid distillation column for VHTR-assisted hydrogen production systems

International Nuclear Information System (INIS)

Youngjoon, Shin; Heesung, Shin; Jiwoon, Jang; Kiyoung, Lee; Jonghwa, Chang

2007-01-01

The sulfur-iodine (SI) cycle and the Westinghouse sulfur hybrid cycle coupled to a very high temperature gas-cooled reactor (VHTR) are well known as a feasible technology to produce hydrogen. The concentration of the sulfuric acid solution and its decomposition are essential parts in both cycles. In this paper, the thermophysical properties which are the boiling point, latent heat, and the partial pressures of water, sulfuric acid, and sulfur trioxide have been correlated as a function of the sulfuric acid concentration for the H 2 SO 4 and H 2 O binary chemical system, based on the data in Perry's chemical engineers' hand-book and other experimental data. By using these thermophysical correlations, a dynamic analysis of a sulfuric acid distillation column has been performed to establish the column design requirements and its optimum operation condition. From the results of the dynamic analysis, an optimized column system is anticipated for a distillation column equipped with 2 ideal plates and a second plate feeding system from the bottom plate. The effects of the hold-up of the re-boiler and the reflux ratio from the top product stream on the elapsing time when the system progresses toward a steady state have been analyzed. (authors)

Monitoring Uranium Transformations Determined by the Evolution of Biogeochemical Processes: Design of Mixed Batch Reactor and Column Studies at Oak Ridge National Laboratory

Energy Technology Data Exchange (ETDEWEB)

Criddle, Craig S.; Wu, Weimin

2013-04-17

With funds provided by the US DOE, Argonne National Laboratory subcontracted the design of batch and column studies to a Stanford University team with field experience at the ORNL IFRC, Oak Ridge, TN. The contribution of the Stanford group ended in 2011 due to budget reduction in ANL. Over the funded research period, the Stanford research team characterized ORNL IFRC groundwater and sediments and set up microcosm reactors and columns at ANL to ensure that experiments were relevant to field conditions at Oak Ridge. The results of microcosm testing demonstrated that U(VI) in sediments was reduced to U(IV) with the addition of ethanol. The reduced products were not uraninite but were instead U(IV) complexes associated with Fe. Fe(III) in solid phase was only partially reduced. The Stanford team communicated with the ANL team members through email and conference calls and face to face at the annual ERSP PI meeting and national meetings.

ARIES-IV Nested Shell Blanket Design

International Nuclear Information System (INIS)

Wong, C.P.C.; Redler, K.; Reis, E.E.; Will, R.; Cheng, E.; Hasan, C.M.; Sharafat, S.

1993-11-01

The ARIES-IV Nested Shell Blanket (NSB) Design is an alternate blanket concept of the ARIES-IV low activation helium-cooled reactor design. The reference design has the coolant routed in the poloidal direction and the inlet and outlet plena are located at the top and bottom of the torus. The NSB design has the high velocity coolant routed in the toroidal direction and the plena are located behind the blanket. This is of significance since the selected structural material is SiC-composite. The NSB is designed to have key high performance components with characteristic dimensions of no larger than 2 m. These components can be brazed to form the blanket module. For the diverter design, we eliminated the use of W as the divertor coating material by relying on the successful development of the gaseous divertor concept. The neutronics and thermal-hydraulic performance of both blanket concepts are similar. The selected blanket and divertor configurations can also meet all the projected structural, neutronics and thermal-hydraulics design limits and requirements. With the selected blanket and divertor materials, the design has a level of safety assurance rate of I (LSA-1), which indicates an inherently safe design

Peculiarities of the intermediate valence state of Ce in CeM2Si2 (M = Fe, Co, Ni) compounds

International Nuclear Information System (INIS)

Koterlyn, M.; Shcherba, I.; Yasnitskii, R.; Koterlyn, G.

2007-01-01

The results of thermoelectric power and the electrical resistivity measurements connected with the intermediate valence (IV) of Ce are presented for the compounds CeM 2 Si 2 (M = Fe, Co, Ni) in the temperature range of 4-800 K. It is shown that CeM 2 Si 2 are Kondo-lattices with the coherence scale T coh ∼ 60-80 K and the so-called single-site Kondo temperature T K ∼ 10 3 K. On the example of CeNi 2 Si 2 we have studied the changes in the structure of density of f states (f-DOS) near the Fermi energy caused by atomic substitutions. The results of structural, transport, magnetic, and Ce L III X-ray absorption spectra measurements in the series Ce 1-x La x Ni 2 Si 2 (0 ≤ x ≤ 0.6), Ce(Ni 1-y Cu y ) 2 Si 2 (0 ≤ y ≤ 0.6) and CeNi 2 (Si 1-z Ge z ) 2 (0 ≤ z ≤ 0.5) are presented. We found that the IV state of Ce in the CeM 2 Si 2 is an evidence of possible opening a wide pseudogap Δ ∼ kT K within the f-DOS structure slightly above the Fermi energy

Nitride passivation of the interface between high-k dielectrics and SiGe

Energy Technology Data Exchange (ETDEWEB)

Sardashti, Kasra [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, California 92093-0411 (United States); Hu, Kai-Ting [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States); Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, California 92093-0411 (United States); Tang, Kechao; McIntyre, Paul [Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States); Madisetti, Shailesh; Oktyabrsky, Serge [Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12222 (United States); Siddiqui, Shariq; Sahu, Bhagawan [TD Research, GLOBALFOUNDRIES US, Inc., Albany, New York 12203 (United States); Yoshida, Naomi; Kachian, Jessica; Dong, Lin [Applied Materials, Inc., Santa Clara, California 95054 (United States); Fruhberger, Bernd [California Institute for Telecommunications and Information Technology, University of California San Diego, La Jolla, California 92093-0436 (United States); Kummel, Andrew C., E-mail: akummel@ucsd.edu [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States)

2016-01-04

In-situ direct ammonia (NH{sub 3}) plasma nitridation has been used to passivate the Al{sub 2}O{sub 3}/SiGe interfaces with Si nitride and oxynitride. X-ray photoelectron spectroscopy of the buried Al{sub 2}O{sub 3}/SiGe interface shows that NH{sub 3} plasma pre-treatment should be performed at high temperatures (300 °C) to fully prevent Ge nitride and oxynitride formation at the interface and Ge out-diffusion into the oxide. C-V and I-V spectroscopy results show a lower density of interface traps and smaller gate leakage for samples with plasma nitridation at 300 °C.

Scalability of pre-packed preparative chromatography columns with different diameters and lengths taking into account extra column effects.

Science.gov (United States)

Schweiger, Susanne; Jungbauer, Alois

2018-02-16

Small pre-packed columns are commonly used to estimate the optimum run parameters for pilot and production scale. The question arises if the experiments obtained with these columns are scalable, because there are substantial changes in extra column volume when going from a very small scale to a benchtop column. In this study we demonstrate the scalability of pre-packed disposable and non-disposable columns of volumes in the range of 0.2-20 ml packed with various media using superficial velocities in the range of 30-500 cm/h. We found that the relative contribution of extra column band broadening to total band broadening was not only high for columns with small diameters, but also for columns with a larger volume due to their wider diameter. The extra column band broadening can be more than 50% for columns with volumes larger than 10 ml. An increase in column diameter leads to high additional extra column band broadening in the filter, frits, and adapters of the columns. We found a linear relationship between intra column band broadening and column length, which increased stepwise with increases in column diameter. This effect was also corroborated by CFD simulation. The intra column band broadening was the same for columns packed with different media. An empirical engineering equation and the data gained from the extra column effects allowed us to predict the intra, extra, and total column band broadening just from column length, diameter, and flow rate. Copyright © 2018 The Author(s). Published by Elsevier B.V. All rights reserved.

Pyrazolates advance cerium chemistry: a CeIII/CeIV redox equilibrium with benzoquinone.

Science.gov (United States)

Werner, Daniel; Deacon, Glen B; Junk, Peter C; Anwander, Reiner

2017-05-16

Two stable cerium(iv) 3,5-dialkylpyrazolate complexes are presented, namely dimeric [Ce(Me 2 pz) 4 ] 2 (Me 2 pz = 3,5-dimethylpyrazolate) and monomeric Ce(tBu 2 pz) 4 (tBu 2 pz = 3,5-di-tert-butylpyrazolate) along with their trivalent counterparts [Ce(Me 2 pz) 3 ] and [Ce(tBu 2 pz) 3 ] 2 . All complexes were obtained from protonolysis reactions employing the silylamide precursors Ce[N(SiHMe 2 ) 2 ] 4 and Ce[N(SiMe 3 ) 2 ] 3 . Treatment of homoleptic Ce IV and Ce III Me 2 pz complexes with 1,4-hydroquinone (H 2 hq) or 1,4-benzoquinone (bq), respectively, ultimately gave the same trimetallic Ce III species via a cerium redox equilibrium. The Ce III complex Ce 3 (Me 2 pz) 5 (pchd) 2 (L) (pchd = 1,4-bis(3,5-dimethylpyrazol-1-yl)cyclohex-2,5-diene-1,4-diolato; L = Me 2 pzH or (thf) 2 ) results from a di-1,4-pyrazolyl attack on pre-coordinated bq. The reduction of bq by [Ce(Me 2 pz) 3 (thf)] 2 , and re-oxidation by the resulting Ce IV species was supported by UV-vis spectroscopic investigations. Comparisons with the redox-innocent complexes [Ln(Me 2 pz) 3 (thf)] 2 (Ln = La and Pr) revealed far less selective reactions with bq, giving hexametallic and octametallic rare-earth metal side products containing 2-Me 2 pz substituted hq ligands.

A spot laser modulated resistance switching effect observed on n-type Mn-doped ZnO/SiO2/Si structure.

Science.gov (United States)

Lu, Jing; Tu, Xinglong; Yin, Guilin; Wang, Hui; He, Dannong

2017-11-09

In this work, a spot laser modulated resistance switching (RS) effect is firstly observed on n-type Mn-doped ZnO/SiO 2 /Si structure by growing n-type Mn-doped ZnO film on Si wafer covered with a 1.2 nm native SiO 2 , which has a resistivity in the range of 50-80 Ω∙cm. The I-V curve obtained in dark condition evidences the structure a rectifying junction, which is further confirmed by placing external bias. Compared to the resistance state modulated by electric field only in dark (without illumination), the switching voltage driving the resistance state of the structure from one state to the other, shows clear shift under a spot laser illumination. Remarkably, the switching voltage shift shows a dual dependence on the illumination position and power of the spot laser. We ascribe this dual dependence to the electric filed produced by the redistribution of photo-generated carriers, which enhance the internal barrier of the hetero-junction. A complete theoretical analysis based on junction current and diffusion equation is presented. The dependence of the switching voltage on spot laser illumination makes the n-type Mn-doped ZnO/SiO 2 /Si structure sensitive to light, which thus allows for the integration of an extra functionality in the ZnO-based photoelectric device.

Optimization and simulation of tandem column supercritical fluid chromatography separations using column back pressure as a unique parameter.

Science.gov (United States)

Wang, Chunlei; Tymiak, Adrienne A; Zhang, Yingru

2014-04-15

Tandem column supercritical fluid chromatography (SFC) has demonstrated to be a useful technique to resolve complex mixtures by serially coupling two columns of different selectivity. The overall selectivity of a tandem column separation is the retention time weighted average of selectivity from each coupled column. Currently, the method development merely relies on extensive screenings and is often a hit-or-miss process. No attention is paid to independently adjust retention and selectivity contributions from individual columns. In this study, we show how tandem column SFC selectivity can be optimized by changing relative dimensions (length or inner diameter) of the coupled columns. Moreover, we apply column back pressure as a unique parameter for SFC optimization. Continuous tuning of tandem column SFC selectivity is illustrated through column back pressure adjustments of the upstream column, for the first time. In addition, we show how and why changing coupling order of the columns can produce dramatically different separations. Using the empirical mathematical equation derived in our previous study, we also demonstrate a simulation of tandem column separations based on a single retention time measurement on each column. The simulation compares well with experimental results and correctly predicts column order and back pressure effects on the separations. Finally, considerations on instrument and column hardware requirements are discussed.

The Mean Metal-line Absorption Spectrum of Damped Ly α Systems in BOSS

Energy Technology Data Exchange (ETDEWEB)

Mas-Ribas, Lluís [Institute of Theoretical Astrophysics, University of Oslo, Postboks 1029, NO-0315 Oslo (Norway); Miralda-Escudé, Jordi; Pérez-Ràfols, Ignasi; Arinyo-i-Prats, Andreu [Institut de Ciències del Cosmos, Universitat de Barcelona (UB-IEEC), Barcelona E-08028, Catalonia (Spain); Noterdaeme, Pasquier; Petitjean, Patrick [Institut d’Astrophysique de Paris, UPMC and CNRS, UMR7095 98bis Boulevard Arago, F-75014—Paris (France); Schneider, Donald P. [Department of Astronomy and Astrophysics, The Pennsylvania State University, University Park, PA 16802 (United States); York, Donald G. [Department of Astronomy and Astrophysics and the Enrico Fermi Institute, University of Chicago, 5640 South Ellis Avenue, Chicago, IL 60637 (United States); Ge, Jian, E-mail: l.m.ribas@astro.uio.no [Department of Astronomy, University of Florida, Bryant Space Science Center, Gainesville, FL 32611-2055 (United States)

2017-09-01

We study the mean absorption spectrum of the Damped Ly α (DLA) population at z ∼ 2.6 by stacking normalized, rest-frame-shifted spectra of ∼27,000 DLA systems from the DR12 of the Baryon Oscillation Spectroscopic Survey (BOSS)/SDSS-III. We measure the equivalent widths of 50 individual metal absorption lines in five intervals of DLA hydrogen column density, five intervals of DLA redshift, and overall mean equivalent widths for an additional 13 absorption features from groups of strongly blended lines. The mean equivalent width of low-ionization lines increases with N {sub H} {sub i}, whereas for high-ionization lines the increase is much weaker. The mean metal line equivalent widths decrease by a factor ∼1.1–1.5 from z ∼ 2.1 to z ∼ 3.5, with small or no differences between low- and high-ionization species. We develop a theoretical model, inspired by the presence of multiple absorption components observed in high-resolution spectra, to infer mean metal column densities from the equivalent widths of partially saturated metal lines. We apply this model to 14 low-ionization species and to Al iii, S iii, Si iii, C iv, Si iv, N v, and O vi. We use an approximate derivation for separating the equivalent width contributions of several lines to blended absorption features, and infer mean equivalent widths and column densities from lines of the additional species N i, Zn ii, C ii*, Fe iii, and S iv. Several of these mean column densities of metal lines in DLAs are obtained for the first time; their values generally agree with measurements of individual DLAs from high-resolution, high signal-to-noise ratio spectra when they are available.

Gas Chromatograph Method Optimization Trade Study for RESOLVE: 20-meter Column v. 8-meter Column

Science.gov (United States)

Huz, Kateryna

2014-01-01

RESOLVE is the payload on a Class D mission, Resource Prospector, which will prospect for water and other volatile resources at a lunar pole. The RESOLVE payload's primary scientific purpose includes determining the presence of water on the moon in the lunar regolith. In order to detect the water, a gas chromatograph (GC) will be used in conjunction with a mass spectrometer (MS). The goal of the experiment was to compare two GC column lengths and recommend which would be best for RESOLVE's purposes. Throughout the experiment, an Inficon Fusion GC and an Inficon Micro GC 3000 were used. The Fusion had a 20m long column with 0.25mm internal diameter (Id). The Micro GC 3000 had an 8m long column with a 0.32mm Id. By varying the column temperature and column pressure while holding all other parameters constant, the ideal conditions for testing with each column length in their individual instrument configurations were determined. The criteria used for determining the optimal method parameters included (in no particular order) (1) quickest run time, (2) peak sharpness, and (3) peak separation. After testing numerous combinations of temperature and pressure, the parameters for each column length that resulted in the most optimal data given my three criteria were selected. The ideal temperature and pressure for the 20m column were 95 C and 50psig. At this temperature and pressure, the peaks were separated and the retention times were shorter compared to other combinations. The Inficon Micro GC 3000 operated better at lower temperature mainly due to the shorter 8m column. The optimal column temperature and pressure were 70 C and 30psig. The Inficon Micro GC 3000 8m column had worse separation than the Inficon Fusion 20m column, but was able to separate water within a shorter run time. Therefore, the most significant tradeoff between the two column lengths was peak separation of the sample versus run time. After performing several tests, it was concluded that better

Preparation of ZnO film on p-Si and I-V characteristics of p-Si/n-ZnO

OpenAIRE

Mondal, Shampa; Kanta, Kalyani Prasad; Mitra, Partha

2012-01-01

Zinc oxide (ZnO) thin films were deposited on p-silicon (Si) substrate from ammonium zincate bath following a chemical dipping technique called SILAR. Films in the thickness range 0.5-4.5 µm could be prepared by varying the number of dipping for a fixed concentration (0.125 M) of zincate bath and fixed pH (11.00-11.10). Higher values of dipping produced nonadherent and poor quality films. Structural characterization by X-ray diffraction (XRD) indicates the formation of polycrystalline single ...

Small Column Ion Exchange

International Nuclear Information System (INIS)

Huff, Thomas

2010-01-01

Small Column Ion Exchange (SCIX) leverages a suite of technologies developed by DOE across the complex to achieve lifecycle savings. Technologies are applicable to multiple sites. Early testing supported multiple sites. Balance of SRS SCIX testing supports SRS deployment. A forma Systems Engineering Evaluation (SEE) was performed and selected Small Column Ion Exchange columns containing Crystalline Silicotitanate (CST) in a 2-column lead/lag configuration. SEE considered use of Spherical Resorcinol-Formaldehyde (sRF). Advantages of approach at SRS include: (1) no new buildings, (2) low volume of Cs waste in solid form compared to aqueous strip effluent; and availability of downstream processing facilities for immediate processing of spent resin.

Structural and optical properties of glancing angle deposited In{sub 2}O{sub 3} columnar arrays and Si/In{sub 2}O{sub 3} photodetector

Energy Technology Data Exchange (ETDEWEB)

Mondal, A.; Shougaijam, B.; Goswami, T.; Dhar, J.C.; Singh, N.K. [National Institute of Technology, Department of Electronics and Communication Engineering, Agartala (India); Choudhury, S. [North Eastern Hill University, Department of Electronics and Communication Engineering, Shillong (India); Chattopadhay, K.K. [Jadavpur University, Department of Physics, Kolkata (India)

2014-04-15

Ordered and perpendicular columnar arrays of In{sub 2}O{sub 3} were synthesized on conducting ITO electrode by a simple glancing angle deposition (GLAD) technique. The as-deposited In{sub 2}O{sub 3} columns were investigated by field emission gun-scanning electron microscope (FEG-SEM). The average length and diameter of the columns were estimated ∝400 nm and ∝100 nm, respectively. The morphology of the structure was examined by transmission electron microscopy (TEM). X-ray diffraction (XRD) analysis shows the polycrystalline nature of the sample which was verified by selective area electron diffraction (SAED) analysis. The growth mechanism and optical properties of the columns were also discussed. Optical absorption shows that In{sub 2}O{sub 3} columns have a high band to band transition at ∝3.75 eV. The ultraviolet and green emissions were obtained from the In{sub 2}O{sub 3} columnar arrays. The P-N junction was formed between In{sub 2}O{sub 3} and P-type Si substrate. The GLAD synthesized In{sub 2}O{sub 3} film exhibits low current conduction compared to In{sub 2}O{sub 3} TF. However, the Si/GLAD-In{sub 2}O{sub 3} detector shows ∝1.5 times enhanced photoresponsivity than that of Si/In{sub 2}O{sub 3} TF. (orig.)

Mass transfer model liquid phase catalytic exchange column simulation applicable to any column composition profile

Energy Technology Data Exchange (ETDEWEB)

Busigin, A. [NITEK USA Inc., Ocala, FL (United States)

2015-03-15

Liquid Phase Catalytic Exchange (LPCE) is a key technology used in water detritiation systems. Rigorous simulation of LPCE is complicated when a column may have both hydrogen and deuterium present in significant concentrations in different sections of the column. This paper presents a general mass transfer model for a homogenous packed bed LPCE column as a set of differential equations describing composition change, and equilibrium equations to define the mass transfer driving force within the column. The model is used to show the effect of deuterium buildup in the bottom of an LPCE column from non-negligible D atom fraction in the bottom feed gas to the column. These types of calculations are important in the design of CECE (Combined Electrolysis and Catalytic Exchange) water detritiation systems.

Crystallization processes in an amorphous Co-Fe-Cr-Si-B alloy under isothermal annealing

Science.gov (United States)

Fedorets, A. N.; Pustovalov, E. V.; Plotnikov, V. S.; Modin, E. B.; Kraynova, G. S.; Frolov, A. M.; Tkachev, V. V.; Tsesarskaya, A. K.

2017-09-01

Research present the crystallization processes investigation of the amorphous Co67Fe3Cr3Si15B12 alloy. In-situ experiments on heating in a transmission electron microscope (TEM) column were carried out. Critical temperatures influencing material structure are determined. The onset temperature of material crystallization was determined.

Formation of Ti(III) and Ti(IV) states in Ti{sub 3}O{sub 5} nano- and microfibers obtained from hydrothermal annealing of C-doped TiO{sub 2} on Si

Energy Technology Data Exchange (ETDEWEB)

Stem, Nair, E-mail: nairstem@hotmail.com [Laboratório de Sistemas Integráveis (LSI), Escola Politécnica, Universidade de São Paulo, Av. Prof. Luciano Gualberto 158, 05508900 São Paulo, SP (Brazil); Souza, Michele L.; Araújo de Faria, Dalva Lúcia Araújo [Laboratório de Espectroscopia Molecular (LEM), Instituto de Química, Universidade de São Paulo, Av. Prof. Lineu Prestes 748, 05508900 São Paulo, SP (Brazil); Santos Filho, Sebastião G. dos [Laboratório de Sistemas Integráveis (LSI), Escola Politécnica, Universidade de São Paulo, Av. Prof. Luciano Gualberto 158, 05508900 São Paulo, SP (Brazil)

2014-05-02

In this work, it is investigated the formation of Ti(III) and Ti(IV) states at the surface and in the bulk of the Ti{sub 3}O{sub 5} material grown as meshes of nano- and micro-fibers obtained from hydrothermal annealing of C-doped TiO{sub 2} on Si. The topography and distribution of the fibers in the meshes were characterized by atomic force microscopy. When the fiber distribution was more compact, a higher photoluminescence signal at 850 nm (1.46 eV) was obtained, indicating the presence of a higher number of defects corresponding to the Ti(III) sites. From X-ray photoelectron spectroscopy, it was obtained a Ti(III)/Ti(IV) ratio much lower than the expected value for the Ti{sub 3}O{sub 5} phase (2 Ti(III): 1 Ti(IV)). The discrepancy was mainly attributed to the reaction of surface Ti(III) states of the Ti{sub 3}O{sub 5} fibers with water during the hydrothermal annealing, resulting in surface Ti(IV) with -OH radicals. On the other hand, X-ray photoelectron spectroscopy also indicated that substitutional and interstitial carbon atoms coexist, elemental carbon exists in the samples due to the co-deposition process and, as a result, the carbon inside of the TiO{sub 2} rutile lattice is acting as one of the precursors for the formation of Ti{sub 3}O{sub 5}. - Highlights: • Ti(III) states are detected inside of Ti{sub 3}O{sub 5} nano- and microfibers. • Ti(IV) states are predominantly detected on the surface of Ti{sub 3}O{sub 5} nano- and microfibers. • Photoluminescence at 850 nm for Ti{sub 3}O{sub 5} is due to defects associated to Ti(III). • Rutile possibly changes to C2/m Ti{sub 3}O{sub 5} during the hydrothermal annealing of C-doped TiO{sub 2}.

The performance of the anthraquinone/p-Si and the pyridine/p-Si rectifying device under X-ray irradiation

International Nuclear Information System (INIS)

Şahin, Yılmaz; Aydoğan, Şakir; Ekinci, Duygu; Turut, Abdulmecit

2016-01-01

Some X-ray irradiation-induced electrical characteristics of the Au/anthraquinone/p-Si and the Au/pyridine/p-Si junction devices have been investigated. The experimental ideality factors increased for both devices with increasing irradiation dose from 25 Gy to 150 Gy. These values ranged from 1.10 to 1.52 for Au/anthraquinone/p-Si and from 1.46 to 1.77 for Au/pyridine/p-Si, respectively. Furthermore, the barrier height of Au/anthraquinone/p-Si increased with increasing irradiation dose from 0.75 to 0.91 eV, whereas it displayed about a constant value for Au/pyridine/p-Si. In addition, the series resistance of both devices increased with x-ray dose too. The increase in the series resistance with x-ray irradiation has been attributed to the decrease in the active dopant densities. It was seen that the ionization damage is effective on most of the junction characteristics. The leakage current of the Au/anthraquinone/p-Si device decreased with x-ray irradiation since the irradiation induced the formation of electron-hole pairs and hydroquinone structure, and thus some of them are trapped by the interface states. The degradation of the I-V curves of Au/pyridine/p-Si/Al device is attributed to the variation of the surface or interface states distribution for the devices. The reverse and forward bias currents relatively increased after x-ray irradiation because of the decrease in bulk lifetime. In addition, ATR-FTIR spectra of anthraquinone and pyridine films showed that pyridine is more stable than anthraquinone under x-ray irradiation. - Highlights: • Two junction devices based on organic materials were fabricated. • The effect of the x-ray irradiation on devices were examined. • Both devices showed x-irradiation-dependence.

The performance of the anthraquinone/p-Si and the pyridine/p-Si rectifying device under X-ray irradiation

Energy Technology Data Exchange (ETDEWEB)

Şahin, Yılmaz [Department of Physics, Faculty of Sciences, University of Atatürk, 25240 Erzurum (Turkey); Aydoğan, Şakir, E-mail: saydogan@atauni.edu.tr [Department of Physics, Faculty of Sciences, University of Atatürk, 25240 Erzurum (Turkey); Ekinci, Duygu [Department of Chemistry, Faculty of Sciences, University of Atatürk, 25240 Erzurum (Turkey); Turut, Abdulmecit [Department of Engineering Physics, Faculty of Sciences, Istanbul Medeniyet University (Turkey)

2016-11-01

Some X-ray irradiation-induced electrical characteristics of the Au/anthraquinone/p-Si and the Au/pyridine/p-Si junction devices have been investigated. The experimental ideality factors increased for both devices with increasing irradiation dose from 25 Gy to 150 Gy. These values ranged from 1.10 to 1.52 for Au/anthraquinone/p-Si and from 1.46 to 1.77 for Au/pyridine/p-Si, respectively. Furthermore, the barrier height of Au/anthraquinone/p-Si increased with increasing irradiation dose from 0.75 to 0.91 eV, whereas it displayed about a constant value for Au/pyridine/p-Si. In addition, the series resistance of both devices increased with x-ray dose too. The increase in the series resistance with x-ray irradiation has been attributed to the decrease in the active dopant densities. It was seen that the ionization damage is effective on most of the junction characteristics. The leakage current of the Au/anthraquinone/p-Si device decreased with x-ray irradiation since the irradiation induced the formation of electron-hole pairs and hydroquinone structure, and thus some of them are trapped by the interface states. The degradation of the I-V curves of Au/pyridine/p-Si/Al device is attributed to the variation of the surface or interface states distribution for the devices. The reverse and forward bias currents relatively increased after x-ray irradiation because of the decrease in bulk lifetime. In addition, ATR-FTIR spectra of anthraquinone and pyridine films showed that pyridine is more stable than anthraquinone under x-ray irradiation. - Highlights: • Two junction devices based on organic materials were fabricated. • The effect of the x-ray irradiation on devices were examined. • Both devices showed x-irradiation-dependence.

Wechsler Intelligence Scale for Children-fourth edition (WISC-IV) short-form validity: a comparison study in pediatric epilepsy.

Science.gov (United States)

Hrabok, Marianne; Brooks, Brian L; Fay-McClymont, Taryn B; Sherman, Elisabeth M S

2014-01-01

The purpose of this article was to investigate the accuracy of the WISC-IV short forms in estimating Full Scale Intelligence Quotient (FSIQ) and General Ability Index (GAI) in pediatric epilepsy. One hundred and four children with epilepsy completed the WISC-IV as part of a neuropsychological assessment at a tertiary-level children's hospital. The clinical accuracy of eight short forms was assessed in two ways: (a) accuracy within +/- 5 index points of FSIQ and (b) the clinical classification rate according to Wechsler conventions. The sample was further subdivided into low FSIQ (≤ 80) and high FSIQ (> 80). All short forms were significantly correlated with FSIQ. Seven-subtest (Crawford et al. [2010] FSIQ) and 5-subtest (BdSiCdVcLn) short forms yielded the highest clinical accuracy rates (77%-89%). Overall, a 2-subtest (VcMr) short form yielded the lowest clinical classification rates for FSIQ (35%-63%). The short form yielding the most accurate estimate of GAI was VcSiMrBd (73%-84%). Short forms show promise as useful estimates. The 7-subtest (Crawford et al., 2010) and 5-subtest (BdSiVcLnCd) short forms yielded the most accurate estimates of FSIQ. VcSiMrBd yielded the most accurate estimate of GAI. Clinical recommendations are provided for use of short forms in pediatric epilepsy.

TEM study of β′ precipitate interaction mechanisms with dislocations and β′ interfaces with the aluminium matrix in Al–Mg–Si alloys

International Nuclear Information System (INIS)

Teichmann, Katharina; Marioara, Calin D.; Andersen, Sigmund J.; Marthinsen, Knut

2013-01-01

The interaction mechanisms between dislocations and semi-coherent, needle-shaped β′ precipitates in Al–Mg–Si alloys have been studied by High Resolution Transmission Electron Microscopy (HRTEM). Dislocation loops appearing as broad contrast rings around the precipitate cross-sections were identified in the Al matrix. A size dependency of the interaction mechanism was observed; the precipitates were sheared when the longest dimension of their cross-section was shorter than approximately 15 nm, and looped otherwise. A more narrow ring located between the Al matrix and bulk β′ indicates the presence of a transition interface layer. Together with the bulk β′ structure, this was further investigated by High Angle Annular Dark Field Scanning TEM (HAADF-STEM). In the bulk β′ a higher intensity could be correlated with a third of the Si-columns, as predicted from the published structure. The transition layer incorporates Si columns in the same arrangement as in bulk β′, although it is structurally distinct from it. The Z-contrast information and arrangement of these Si-columns demonstrate that they are an extension of the Si-network known to structurally connect all the precipitate phases in the Al–Mg–Si(–Cu) system. The width of the interface layer was estimated to about 1 nm. - Highlights: ► β′ is found to be looped at sizes larger than 15 nm (cross section diameter). ► β′ is found to be sheared at sizes smaller than 15 nm (cross section diameter). ► The recently determined crystal structure of β′ is confirmed by HAADF-STEM. ► Between β′ and the Al-matrix a transition layer of about 1 nm is existent. ► The β′/matrix layer is structurally distinct from bulk β′ and the aluminium matrix.

Comparisons between TiO2- and SiO2-flux assisted TIG welding processes.

Science.gov (United States)

Tseng, Kuang-Hung; Chen, Kuan-Lung

2012-08-01

This study investigates the effects of flux compounds on the weld shape, ferrite content, and hardness profile in the tungsten inert gas (TIG) welding of 6 mm-thick austenitic 316 L stainless steel plates, using TiO2 and SiO2 powders as the activated fluxes. The metallurgical characterizations of weld metal produced with the oxide powders were evaluated using ferritoscope, optical microscopy, and Vickers microhardness test. Under the same welding parameters, the penetration capability of TIG welding with TiO2 and SiO2 fluxes was approximately 240% and 292%, respectively. A plasma column made with SiO2 flux exhibited greater constriction than that made with TiO2 flux. In addition, an anode root made with SiO2 flux exhibited more condensation than that made with TiO2 flux. Results indicate that energy density of SiO2-flux assisted TIG welding is higher than that of TiO2-flux assisted TIG welding.

Transport and abatement of fluorescent silica nanoparticle (SiO_2 NP) in granular filtration: effect of porous media and ionic strength

International Nuclear Information System (INIS)

Zeng, Chao; Shadman, Farhang; Sierra-Alvarez, Reyes

2017-01-01

The extensive production and application of engineered silica nanoparticles (SiO_2 NPs) will inevitably lead to their release into the environment. Granular media filtration, a widely used process in water and wastewater treatment plants, has the potential for NP abatement. In this work, laboratory-scale column experiments were performed to study the transport and retention of SiO_2 NPs on three widely used porous materials, i.e., sand, anthracite, and granular activated carbon (GAC). Synthetic fluorescent core-shell SiO_2 NPs (83 nm) were used to facilitate NP detection. Sand showed very low capacity for SiO_2 filtration as this material had a surface with limited surface area and a high concentration of negative charge. Also, we found that the stability and transport of SiO_2 NP were strongly dependent on the ionic strength of the solution. Increasing ionic strength led to NP agglomeration and facilitated SiO_2 NP retention, while low ionic strength resulted in release of captured NPs from the sand bed. Compared to sand, anthracite and GAC showed higher affinity for SiO_2 NP capture. The superior capacity of GAC was primarily due to its porous structure and high surface area. A process model was developed to simulate NP capture in the packed bed columns and determine fundamental filtration parameters. This model provided an excellent fit to the experimental data. Taken together, the results obtained indicate that GAC is an interesting material for SiO_2 NP filtration.

Transport and abatement of fluorescent silica nanoparticle (SiO2 NP) in granular filtration: effect of porous media and ionic strength

Science.gov (United States)

Zeng, Chao; Shadman, Farhang; Sierra-Alvarez, Reyes

2017-03-01

The extensive production and application of engineered silica nanoparticles (SiO2 NPs) will inevitably lead to their release into the environment. Granular media filtration, a widely used process in water and wastewater treatment plants, has the potential for NP abatement. In this work, laboratory-scale column experiments were performed to study the transport and retention of SiO2 NPs on three widely used porous materials, i.e., sand, anthracite, and granular activated carbon (GAC). Synthetic fluorescent core-shell SiO2 NPs (83 nm) were used to facilitate NP detection. Sand showed very low capacity for SiO2 filtration as this material had a surface with limited surface area and a high concentration of negative charge. Also, we found that the stability and transport of SiO2 NP were strongly dependent on the ionic strength of the solution. Increasing ionic strength led to NP agglomeration and facilitated SiO2 NP retention, while low ionic strength resulted in release of captured NPs from the sand bed. Compared to sand, anthracite and GAC showed higher affinity for SiO2 NP capture. The superior capacity of GAC was primarily due to its porous structure and high surface area. A process model was developed to simulate NP capture in the packed bed columns and determine fundamental filtration parameters. This model provided an excellent fit to the experimental data. Taken together, the results obtained indicate that GAC is an interesting material for SiO2 NP filtration.

Comprehensive profiling of ribonucleosides modification by affinity zirconium oxide-silica composite monolithic column online solid-phase microextraction - Mass spectrometry analysis.

Science.gov (United States)

Jiang, Han-Peng; Chu, Jie-Mei; Lan, Meng-Dan; Liu, Ping; Yang, Na; Zheng, Fang; Yuan, Bi-Feng; Feng, Yu-Qi

2016-09-02

More than 140 modified ribonucleosides have been identified in RNA. Determination of endogenous modified ribonucleosides in biological fluids may serve as non-invasive disease diagnostic strategy. However, detection of the modified ribonucleosides in biological fluids is challenging, especially for the low abundant modified ribonucleosides due to the serious matrix interferences of biological fluids. Here, we developed a facile preparation strategy and successfully synthesized zirconium oxide-silica (ZrO2/SiO2) composite capillary monolithic column that exhibited excellent performance for the selective enrichment of cis-diol-containing compounds. Compared with the boronate-based affinity monolith, the ZrO2/SiO2 monolith showed ∼2 orders of magnitude higher extraction capacity and can be used under physiological pH (pH 6.5-7.5). Using the prepared ZrO2/SiO2 composite monolith as the trapping column and reversed-phase C18 column as the analytical column, we further established an online solid-phase microextraction (SPME) in combination with liquid chromatography-mass spectrometry (online SPME-LC-MS/MS) analysis for the comprehensive profiling of ribonucleosides modification in human urine. Our results showed that 68 cis-diol-containing ribosylated compounds were identified in human urine, which is, to the best of our knowledge, the highest numbers of cis-diol-containing compounds were determined in a single analysis. It is worth noting that four modified ribonucleosides were discovered in the human urine for the first time. In addition, the quantification results from the pooled urine samples showed that compared to healthy controls, the contents of sixteen ribose conjugates in the urine of gastric cancer, eleven in esophagus cancer and seven in lymphoma increased more than two folds. Among these ribose conjugates, four ribose conjugates increased more than two folds in both gastric cancer and esophagus cancer; three ribose conjugates increased more than two

First wall/blanket/shield design and power conversion for the ARIES-IV tokamak fusion reactor

International Nuclear Information System (INIS)

Hasan, M.Z.; Conn, R.W.; Najmabadi, F.

1994-01-01

ARIES-IV is a conceptual, D-T burning, steady-state tokamak fusion reactor producing 1000 MWe net. It operates in the second plasma stability regime. The structural material is SiC composite and the primary coolant is helium at 10 MPa base pressure. The coolant flows poloidally in two loops, one inboard and one outboard. The coolant channels are circular tubes that form shells and are placed between two purge plates; the space between two adjacent tubes and the plate is purge gas flow area. The solid breeder is Li 2 O, and Be is used as neutron multiplier to ensure adequate TBR. Beryllium and Li 2 O are placed in between the adjacent tube shells. A computer code was developed to perform and optimize thermal-hydraulic design. Minimization of blanket thickness and the amount of Be, and the maximization of breeder zone thickness were done by iteration with neutronics. The gross thermal efficiency is 49%. The cost of electricity is 68 mills/kWh. The use of low activation SiC composite as the structural material, Li 2 O as the solid breeder, and avoidance of tungsten in the divertor has resulted in a good safety performance, and LSA rating of 1. Overall, SiC/He/Li 2 O ARIES-IV design is expected to have attractive economic and safety advantages

Two generalizations of column-convex polygons

International Nuclear Information System (INIS)

Feretic, Svjetlan; Guttmann, Anthony J

2009-01-01

Column-convex polygons were first counted by area several decades ago, and the result was found to be a simple, rational, generating function. In this work we generalize that result. Let a p-column polyomino be a polyomino whose columns can have 1, 2, ..., p connected components. Then column-convex polygons are equivalent to 1-convex polyominoes. The area generating function of even the simplest generalization, namely 2-column polyominoes, is unlikely to be solvable. We therefore define two classes of polyominoes which interpolate between column-convex polygons and 2-column polyominoes. We derive the area generating functions of those two classes, using extensions of existing algorithms. The growth constants of both classes are greater than the growth constant of column-convex polyominoes. Rather tight lower bounds on the growth constants complement a comprehensive asymptotic analysis.

Fabrication of p-Si/n-ZnO:Al heterojunction diode and determination of electrical parameters

Science.gov (United States)

Ilican, Saliha; Gorgun, Kamuran; Aksoy, Seval; Caglar, Yasemin; Caglar, Mujdat

2018-03-01

We present a fundamental experimental study of a microwave assisted chemical bath deposition (MW-CBD) method for Al doped ZnO films. Field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD) spectroscopy were used to analyze the microstructures and crystalline structures of these films, respectively. The p-Si/n-ZnO:Al heterojunction diodes were fabricated. The current-voltage (I-V) characteristics of these diodes were measured at room temperature. The important electrical parameters such as series resistance, the ideality factor and the barrier height were determined by performing plots from the forward bias I-V characteristics using different methods. The obtained results indicate that Al doping improve the electrical properties of the p-Si/n-ZnO diode. The best rectification properties were observed in the p-Si/n-ZnO:5%Al heterojunction diode, so only capacitance-voltage (C-V) measurements of this diode were taken. Electrical parameter values such as series resistance, the built-in potential and the acceptor concentration calculated for this heterojunction diode.

Bondonic effects in group-IV honeycomb nanoribbons with Stone-Wales topological defects.

Science.gov (United States)

Putz, Mihai V; Ori, Ottorino

2014-04-03

This work advances the modeling of bondonic effects on graphenic and honeycomb structures, with an original two-fold generalization: (i) by employing the fourth order path integral bondonic formalism in considering the high order derivatives of the Wiener topological potential of those 1D systems; and (ii) by modeling a class of honeycomb defective structures starting from graphene, the carbon-based reference case, and then generalizing the treatment to Si (silicene), Ge (germanene), Sn (stannene) by using the fermionic two-degenerate statistical states function in terms of electronegativity. The honeycomb nanostructures present η-sized Stone-Wales topological defects, the isomeric dislocation dipoles originally called by authors Stone-Wales wave or SWw. For these defective nanoribbons the bondonic formalism foresees a specific phase-transition whose critical behavior shows typical bondonic fast critical time and bonding energies. The quantum transition of the ideal-to-defect structural transformations is fully described by computing the caloric capacities for nanostructures triggered by η-sized topological isomerisations. Present model may be easily applied to hetero-combinations of Group-IV elements like C-Si, C-Ge, C-Sn, Si-Ge, Si-Sn, Ge-Sn.

Bondonic Effects in Group-IV Honeycomb Nanoribbons with Stone-Wales Topological Defects

Directory of Open Access Journals (Sweden)

Mihai V. Putz

2014-04-01

Full Text Available This work advances the modeling of bondonic effects on graphenic and honeycomb structures, with an original two-fold generalization: (i by employing the fourth order path integral bondonic formalism in considering the high order derivatives of the Wiener topological potential of those 1D systems; and (ii by modeling a class of honeycomb defective structures starting from graphene, the carbon-based reference case, and then generalizing the treatment to Si (silicene, Ge (germanene, Sn (stannene by using the fermionic two-degenerate statistical states function in terms of electronegativity. The honeycomb nanostructures present η-sized Stone-Wales topological defects, the isomeric dislocation dipoles originally called by authors Stone-Wales wave or SWw. For these defective nanoribbons the bondonic formalism foresees a specific phase-transition whose critical behavior shows typical bondonic fast critical time and bonding energies. The quantum transition of the ideal-to-defect structural transformations is fully described by computing the caloric capacities for nanostructures triggered by η-sized topological isomerisations. Present model may be easily applied to hetero-combinations of Group-IV elements like C-Si, C-Ge, C-Sn, Si-Ge, Si-Sn, Ge-Sn.

Displacement of group III, IV, V, and VI impurities in Si by the analyzing beam

International Nuclear Information System (INIS)

Wiggers, L.W.; Saris, F.W.

1978-01-01

By means of 2MeV He + backscattering and 1.5 MeV H + backscattering and nuclear reaction analysis in combination with the channeling technique displacement of impurity atoms in Si from substitutional into non-substitutional positions under bombardment is studied. In this paper the authors report on the displacement of Ga, Ge, P, As, Sb, Bi, Se, and Te in Si single crystals. It appears that displacement of impurity atoms is not an exception but almost a rule. The only element for which an effect was not found was Ge. Values for the displacement rate were derived and appeared to be, with the exception for Ge, all of the same order of magnitude. (Auth.)

Molecular beam epitaxy grown Ge/Si pin layer sequence for photonic devices

International Nuclear Information System (INIS)

Schulze, J.; Oehme, M.; Werner, J.

2012-01-01

A key challenge to obtain a convergence of classical Si-based microelectronics and optoelectronics is the manufacturing of photonic integrated circuits integrable into classical Si-based integrated circuits. This integration would be greatly enhanced if similar facilities and technologies could be used. Therefore one approach is the development of optoelectronic components and devices made from group-IV-based materials such as SiGe, Ge or Ge:Sn. In this paper the optoelectronic performances of a pin diode made from a Ge/Si heterostructure pin layer sequence grown by molecular beam epitaxy are discussed. After a detailed description of the layer sequence growth and the device manufacturing process it will be shown that – depending on the chosen operating point and device design – the diode serves as a broadband high speed photo detector, Franz–Keldysh effect modulator or light emitting diode.

Molecular beam epitaxy grown Ge/Si pin layer sequence for photonic devices

Energy Technology Data Exchange (ETDEWEB)

Schulze, J., E-mail: schulze@iht.uni-stuttgart.de; Oehme, M.; Werner, J.

2012-02-01

A key challenge to obtain a convergence of classical Si-based microelectronics and optoelectronics is the manufacturing of photonic integrated circuits integrable into classical Si-based integrated circuits. This integration would be greatly enhanced if similar facilities and technologies could be used. Therefore one approach is the development of optoelectronic components and devices made from group-IV-based materials such as SiGe, Ge or Ge:Sn. In this paper the optoelectronic performances of a pin diode made from a Ge/Si heterostructure pin layer sequence grown by molecular beam epitaxy are discussed. After a detailed description of the layer sequence growth and the device manufacturing process it will be shown that - depending on the chosen operating point and device design - the diode serves as a broadband high speed photo detector, Franz-Keldysh effect modulator or light emitting diode.

Transport and abatement of fluorescent silica nanoparticle (SiO{sub 2} NP) in granular filtration: effect of porous media and ionic strength

Energy Technology Data Exchange (ETDEWEB)

Zeng, Chao, E-mail: chaozeng@email.arizona.edu; Shadman, Farhang; Sierra-Alvarez, Reyes [University of Arizona, Department of Chemical and Environmental Engineering (United States)

2017-03-15

The extensive production and application of engineered silica nanoparticles (SiO{sub 2} NPs) will inevitably lead to their release into the environment. Granular media filtration, a widely used process in water and wastewater treatment plants, has the potential for NP abatement. In this work, laboratory-scale column experiments were performed to study the transport and retention of SiO{sub 2} NPs on three widely used porous materials, i.e., sand, anthracite, and granular activated carbon (GAC). Synthetic fluorescent core-shell SiO{sub 2} NPs (83 nm) were used to facilitate NP detection. Sand showed very low capacity for SiO{sub 2} filtration as this material had a surface with limited surface area and a high concentration of negative charge. Also, we found that the stability and transport of SiO{sub 2} NP were strongly dependent on the ionic strength of the solution. Increasing ionic strength led to NP agglomeration and facilitated SiO{sub 2} NP retention, while low ionic strength resulted in release of captured NPs from the sand bed. Compared to sand, anthracite and GAC showed higher affinity for SiO{sub 2} NP capture. The superior capacity of GAC was primarily due to its porous structure and high surface area. A process model was developed to simulate NP capture in the packed bed columns and determine fundamental filtration parameters. This model provided an excellent fit to the experimental data. Taken together, the results obtained indicate that GAC is an interesting material for SiO{sub 2} NP filtration.

Group IV nanotube transistors for next generation ubiquitous computing

KAUST Repository

Fahad, Hossain M.

2014-06-04

Evolution in transistor technology from increasingly large power consuming single gate planar devices to energy efficient multiple gate non-planar ultra-narrow (< 20 nm) fins has enhanced the scaling trend to facilitate doubling performance. However, this performance gain happens at the expense of arraying multiple devices (fins) per operation bit, due to their ultra-narrow dimensions (width) originated limited number of charges to induce appreciable amount of drive current. Additionally arraying degrades device off-state leakage and increases short channel characteristics, resulting in reduced chip level energy-efficiency. In this paper, a novel nanotube device (NTFET) topology based on conventional group IV (Si, SiGe) channel materials is discussed. This device utilizes a core/shell dual gate strategy to capitalize on the volume-inversion properties of an ultra-thin (< 10 nm) group IV nanotube channel to minimize leakage and short channel effects while maximizing performance in an area-efficient manner. It is also shown that the NTFET is capable of providing a higher output drive performance per unit chip area than an array of gate-all-around nanowires, while maintaining the leakage and short channel characteristics similar to that of a single gate-all-around nanowire, the latter being the most superior in terms of electrostatic gate control. In the age of big data and the multitude of devices contributing to the internet of things, the NTFET offers a new transistor topology alternative with maximum benefits from performance-energy efficiency-functionality perspective. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Advanced In Situ I-V Measurements Used in the Study of Porous Structures Growth on Silicon

Directory of Open Access Journals (Sweden)

Amare Benor

2017-01-01

Full Text Available The rate of oxide formation during growth of pores structures on silicon was investigated by in situ I-V measurements. The measurements were designed to get two I-V curves in a short time (total time for the two measurements was 300 seconds taking into account the gap (in mA/cm2 for each corresponding voltage. The in situ I-V measurements were made at different pore depth/time, at the electrolyte-pore tip interface, while etching takes place based on p-type Si. The results showed increasing, decreasing, and constant I-V gap in time, for macropores, nanopores, and electropolishing regimes, respectively. This was related to the expected diffusion limitation of oxide forming (H2O molecules reaching the electrolyte-pore tip and the anodizing current, while etching takes place. The method can be developed further and has the potential to be applied in other electrochemically etched porous semiconductor materials.

Effects of a highly Si-doped GaN current spreading layer at the n+-GaN/multi-quantum-well interface on InGaN/GaN blue-light-emitting diodes

International Nuclear Information System (INIS)

Kim, C. S.; Cho, H. K.; Choi, R. J.; Hahn, Y. B.; Lee, H. J.; Hong, C. H.

2004-01-01

Highly Si-doped GaN thin current spreading layer (CSL) with various carrier concentrations were inserted before the n + -GaN/multi-quantum-well (MQW) interface controlled by the growth rate and the modulated Si-doping in InGaN/GaN blue light-emitting diodes (LEDs), and their effects were investigated by using capacitance-voltage (C-V), current-voltage (I-V), and output power measurements. The LEDs with a highly Si-doped CSL show enhanced I-V characteristics and increased output power with increasing carrier concentration up to some critical point in the CSL. This means that proper high Si-doping in some limited area before the interface may enhance the device performance through the current spreading effect.

Preparative separation of polyphenols from artichoke by polyamide column chromatography and high-speed counter-current chromatography

International Nuclear Information System (INIS)

Shu, Xikai; Wang, Mei; Liu, Daicheng; Wang, Daijie; Lin, Xiaojing; Liu, Jianhua; Wang, Xiao; Huang, Luqi

2013-01-01

An efficient method for the rapid separation and purification of polyphenols from artichoke by polyamide column chromatography in combination with high-speed counter-current chromatography (HSCCC) was successfully built. The crude ethanol extracts from dry artichoke were first pre-separated by polyamide column chromatography and divided in two parts as sample 1 and sample 2. Then, the samples were further separated by HSCCC and yielded 7.8 mg of chlorogenic acid (compound I), 24.5 mg of luteolin-7-O-β-D-rutinoside (compound II), 18.4 mg of luteolin-7-O-β-D-glucoside (compound III), and 33.4 mg of cynarin (compound IV) with purity levels of 92.0%, 98.2%, 98.5%, and 98.0%, respectively, as determined by high-performance liquid chromatography (HPLC) method. The chemical structures of these compounds were identified by electrospray ionization-mass spectrometry (ESI-MS) and nuclear magnetic resonance (NMR). (author)

Preparative separation of polyphenols from artichoke by polyamide column chromatography and high-speed counter-current chromatography

Energy Technology Data Exchange (ETDEWEB)

Shu, Xikai; Wang, Mei; Liu, Daicheng [College of Life Science, Shandong Normal University, Jinan, Shandong (China); Wang, Daijie; Lin, Xiaojing; Liu, Jianhua; Wang, Xiao; Huang, Luqi, E-mail: wxjn1998@126.com [Shandong Analysis and Test Center, Shandong Academy of Sciences, Jinan, Shandong (China)

2013-09-01

An efficient method for the rapid separation and purification of polyphenols from artichoke by polyamide column chromatography in combination with high-speed counter-current chromatography (HSCCC) was successfully built. The crude ethanol extracts from dry artichoke were first pre-separated by polyamide column chromatography and divided in two parts as sample 1 and sample 2. Then, the samples were further separated by HSCCC and yielded 7.8 mg of chlorogenic acid (compound I), 24.5 mg of luteolin-7-O-{beta}-D-rutinoside (compound II), 18.4 mg of luteolin-7-O-{beta}-D-glucoside (compound III), and 33.4 mg of cynarin (compound IV) with purity levels of 92.0%, 98.2%, 98.5%, and 98.0%, respectively, as determined by high-performance liquid chromatography (HPLC) method. The chemical structures of these compounds were identified by electrospray ionization-mass spectrometry (ESI-MS) and nuclear magnetic resonance (NMR). (author)

Development of spent salt treatment technology by zeolite column system. Performance evaluation of zeolite column

International Nuclear Information System (INIS)

Miura, Hidenori; Uozumi, Koichi

2009-01-01

At electrorefining process, fission products(FPs) accumulate in molten salt. To avoid influence on heating control by decay heat and enlargement of FP amount in the recovered fuel, FP elements must be removed from the spent salt of the electrorefining process. For the removal of the FPs from the spent salt, we are investigating the availability of zeolite column system. For obtaining the basic data of the column system, such as flow property and ion-exchange performance while high temperature molten salt is passing through the column, and experimental apparatus equipped with fraction collector was developed. By using this apparatus, following results were obtained. 1) We cleared up the flow parameter of column system with zeolite powder, such as flow rate control by argon pressure. 2) Zeolite 4A in the column can absorb cesium that is one of the FP elements in molten salt. From these results, we got perspective on availability of the zeolite column system. (author)

Sorption of Uranium(VI and Thorium(IV by Jordanian Bentonite

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Fawwaz I. Khalili

2013-01-01

Full Text Available Purification of raw bentonite was done to remove quartz. This includes mixing the raw bentonite with water and then centrifuge it at 750 rpm; this process is repeated until white purified bentonite is obtained. XRD, XRF, FTIR, and SEM techniques will be used for the characterization of purified bentonite. The sorption behavior of purified Jordanian bentonite towards and Th4+ metal ions in aqueous solutions was studied by batch experiment as a function of pH, contact time, temperature, and column techniques at 25.0∘C and . The highest rate of metal ions uptake was observed after 18 h of shaking, and the uptake has increased with increasing pH and reached a maximum at . Bentonite has shown high metal ion uptake capacity toward uranium(VI than thorium(IV. Sorption data were evaluated according to the pseudo- second-order reaction kinetic. Sorption isotherms were studied at temperatures 25.0∘C, 35.0∘C, and 45.0∘C. The Langmuir, Freundlich, and Dubinin-Radushkevich (D-R sorption models equations were applied and the proper constants were derived. It was found that the sorption process is enthalpy driven for uranium(VI and thorium(IV. Recovery of uranium(VI and thorium(IV ions after sorption was carried out by treatment of the loaded bentonite with different concentrations of HNO3 1.0 M, 0.5 M, 0.1 M, and 0.01 M. The best percent recovery for uranium(VI and thorium(IV was obtained when 1.0 M HNO3 was used.

Barium-137 M milkers based on 12-molybdo cerate column matrix. Vol. 3

Energy Technology Data Exchange (ETDEWEB)

El-absy, M A; El-Enien, M A; El-Said, H; Raieh, M [Isotopes and Rdioisotope Generators Department, Hot Laboratories Center, Atomic Energy Authority, Cairo (Egypt)

1996-03-01

The interaction of {sup 134} Cs{sup +} and {sup 131},{sup 133} Ba{sup 2+} radiotracers (10{sup -4} M for each) in HCl, H N O{sub 3}, Na Cl, Na N O{sub 3}, and N H{sub 4} Cl solutions on 12-Molybdo cerate (IV) has been studied by batch equilibrium at room temperature. The corresponding distribution coefficients (K{sub d} values in mi/g) were determined as a function of the composition of the reaction medium and drying temperature; 50, 150 and 200 degree C of the molybdate matrix under comparable conditions, Cs{sup +} ions are strongly retained on the adsorbent material than Ba{sup 2+} ions. Elution performance of the daughter {sup 134m} Ba (T{sub 1/}2=2.7 min.) from its parent {sup 137} Cs (T{sub 1/2}=30 y) was investigated on small chromatographic columns of the matrix. Based on the data obtained, 2 g 12-molybdo cerate (IV), dried at 200 degree C, loaded with 1 mCi {sup 137} Cs/{sup 137m} Ba milkers was prepared. The generated {sup 137m} Ba daughter was continuously eluted by passing a mixture solution of 0.1 M HCl + 0.1 M N H{sub 4} Cl as eluent through the column bed at flow rates of 1 and 2 m1/min. Eluate assessment proved reproducibility of the elution yields about 58% {sup 137m} Ba in 5 m1 eluate. Radionuclidic and chemical purity of the eluate proved to be suitable for use in nuclear medicine and also industrial applications. 6 figs., 1 tab.

Relasi Gender dalam Kolom Humor “Si Palui” di Banjarmasin Post (Analisis Wacana Kritis Norman Fairclough pada Kolom Humor Si Palui di Banjarmasin Post

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Irene Santika Vidiadari

2017-06-01

Full Text Available As well as a result of cultural perception, humour can also be seen as a kind of text representing the culture of society which produces it. The humour column of “Si Palui” in Banjarmasin Post is not an exception. Reflecting the culture of the people of Banjar, the stories in Si Palui are strongly related to women and how men, as the dominant gender in Banjar culture, deal with women in daily life. Inasmuchas text is firmly connected with discourse, using Norman Fairclough’s Critical Discourse Analysis, in this paper I will see the discourse of gender relation in Si Palui on three levels—micro (text, mezzo (text producent, and macro (sociocultural. On micro level the representation is seen from the using of language. On the second level, mezzo, how women are represented is studied from the view point of the text producent, namely Banjarmasin Post. Meanwhile on the third level which is macro, the representation of women in Si Palui is comprehended from broader perspective, namely the Banjar culture which can not be separated from Islam Banjar. It is concluded from this research that: (1 On micro level men are always more dominant than women, (2 on mezzo level the sexist humor of Si Palui is strongly related to the fact that all of the writer of Si Palui are men, and (3 on macro level, the gender relation narrated on Si Palui is firmly connected with patriarchal ideology adopted by the people of Banjar, which is legitimated by Islam Banjar.

GSK3 inactivation is involved in mitochondrial complex IV defect in transforming growth factor (TGF) {beta}1-induced senescence

Energy Technology Data Exchange (ETDEWEB)

Byun, Hae-Ok; Jung, Hyun-Jung; Seo, Yong-Hak; Lee, Young-Kyoung [Department of Biochemistry and Molecular Biology, Ajou University School of Medicine, Suwon 443-721 (Korea, Republic of); Department of Molecular Science and Technology, The Graduate School, Ajou University, Suwon 443-721 (Korea, Republic of); Hwang, Sung-Chul [Department of Pulmonary and Critical Care Medicine, Ajou University School of Medicine, Suwon 443-721 (Korea, Republic of); Seong Hwang, Eun [Department of Life Science, University of Seoul, Seoul 130-743 (Korea, Republic of); Yoon, Gyesoon, E-mail: ypeace@ajou.ac.kr [Department of Biochemistry and Molecular Biology, Ajou University School of Medicine, Suwon 443-721 (Korea, Republic of); Department of Molecular Science and Technology, The Graduate School, Ajou University, Suwon 443-721 (Korea, Republic of)

2012-09-10

Transforming growth factor {beta}1 (TGF {beta}1) induces Mv1Lu cell senescence by persistently producing mitochondrial reactive oxygen species (ROS) through decreased complex IV activity. Here, we investigated the molecular mechanism underlying the effect of TGF {beta}1 on mitochondrial complex IV activity. TGF {beta}1 progressively phosphorylated the negative regulatory sites of both glycogen synthase kinase 3 (GSK3) {alpha} and {beta}, corresponding well to the intracellular ROS generation profile. Pre-treatment of N-acetyl cysteine, an antioxidant, did not alter this GSK3 phosphorylation (inactivation), whereas pharmacological inhibition of GSK3 by SB415286 significantly increased mitochondrial ROS, implying that GSK3 phosphorylation is an upstream event of the ROS generation. GSK3 inhibition by SB415286 decreased complex IV activity and cellular O{sub 2} consumption rate and eventually induced senescence of Mv1Lu cell. Similar results were obtained with siRNA-mediated knockdown of GSK3. Moreover, we found that GSK3 not only exists in cytosol but also in mitochondria of Mv1Lu cell and the mitochondrial GSK3 binds complex IV subunit 6b which has no electron carrier and is topologically located in the mitochondrial intermembrane space. Involvement of subunit 6b in controlling complex IV activity and overall respiration rate was proved with siRNA-mediated knockdown of subunit 6b. Finally, TGF {beta}1 treatment decreased the binding of the subunit 6b to GSK3 and subunit 6b phosphorylation. Taken together, our results suggest that GSK3 inactivation is importantly involved in TGF {beta}1-induced complex IV defects through decreasing phosphorylation of the subunit 6b, thereby contributing to senescence-associated mitochondrial ROS generation.

On the identity of the physikós quoted in col. IV of Derveni papyrus

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Carlos Megino

2014-06-01

Full Text Available I try to establish who is the philosopher or, if he is not found, the philosophical movement, who satisfies the doctrine about prayer and chance, that the Derveni papyrus’ author attributes to the «physicus» quoted in column IV, so that this philosopher can probably be identified with this physicus. In this context, I discuss the possibility, defended by Ferrari, of the physicus in question being Democritus, and I give complementary arguments in favor of this hypothesis.

Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach

Science.gov (United States)

Pura, J. L.; Anaya, J.; Souto, J.; Prieto, A. C.; Rodríguez, A.; Rodríguez, T.; Periwal, P.; Baron, T.; Jiménez, J.

2018-03-01

Semiconductor nanowires (NWs) are the building blocks of future nanoelectronic devices. Furthermore, their large refractive index and reduced dimension make them suitable for nanophotonics. The study of the interaction between nanowires and visible light reveals resonances that promise light absorption/scattering engineering for photonic applications. Micro-Raman spectroscopy has been used as a characterization tool for semiconductor nanowires. The light/nanowire interaction can be experimentally assessed through the micro-Raman spectra of individual nanowires. As compared to both metallic and dielectric nanowires, semiconductor nanowires add additional tools for photon engineering. In particular, one can grow heterostructured nanowires, both axial and radial, and also one could modulate the doping level and the surface condition among other factors than can affect the light/NW interaction. We present herein a study of the optical response of group IV semiconductor nanowires to visible photons. The study is experimentally carried out through micro-Raman spectroscopy of different group IV nanowires, both homogeneous and axially heterostructured (SiGe/Si). The results are analyzed in terms of the electromagnetic modelling of the light/nanowire interaction using finite element methods. The presence of axial heterostructures is shown to produce electromagnetic resonances promising new photon engineering capabilities of semiconductor nanowires.

Performance evaluation of a rectifier column using gamma column scanning

Directory of Open Access Journals (Sweden)

Aquino Denis D.

2017-12-01

Full Text Available Rectifier columns are considered to be a critical component in petroleum refineries and petrochemical processing installations as they are able to affect the overall performance of these facilities. It is deemed necessary to monitor the operational conditions of such vessels to optimize processes and prevent anomalies which could pose undesired consequences on product quality that might lead to huge financial losses. A rectifier column was subjected to gamma scanning using a 10-mCi Co-60 source and a 2-inch-long detector in tandem. Several scans were performed to gather information on the operating conditions of the column under different sets of operating parameters. The scan profiles revealed unexpected decreases in the radiation intensity at vapour levels between trays 2 and 3, and between trays 4 and 5. Flooding also occurred during several scans which could be attributed to parametric settings.

Study for obtaining a suppressor device of transients using the Al/SRO/Si structure; Estudio para la obtencion de un dispositivo supresor de transitorios utilizando la estructura Al/SRO/Si

Energy Technology Data Exchange (ETDEWEB)

Marin Ramos, Heriberto

1999-06-01

The circuits and electronic equipment use protective devices against voltage transients. In this work the Aluminium/Oxide structure rich in Silicon/Silicon is presented as another option in the field of transient suppressors devices. Some devices used in the suppression of voltage transients are: zinc oxide varistors, of silicon carbide varistors, selenium cells, and Zener diodes. The Al/SRO/Si structure presents conductive properties due to the presence of excess Silicon in the SRO film. Varying the reacting gases ratio (Ro=N{sub 2}O/SiH{sub 4}) during the growth of the film of Oxide Rich in Silicon (SRO), the conductivity of the material can be varied. The SRO turns out to be of great importance for the suppressor device of transients device that is pretended to be obtained in the present work due to its non-ohmic behavior. The Al/SRO/Si device behaves of several ways depending on the characteristics of the SRO and the silicon substrate. It has been found that one of these behaviors is as a of voltage transients suppressor. Verifying its behavior as transient suppressor, the effects of the film thickness, the area and the excess of silicon of the device were studied, for this purpose the characteristic I-V was obtained, and the obtention of some parameters in DC. In the present work the SRO was obtained by means of LPCVD (Low Pressure Chemical Vapor Deposition), initially a C-V characterization was made to obtain an indicative parameter of excess silicon, such as: permittivity of the SRO film. Also, the refraction index was obtained, which is an indicative parameter of the presence of excess Silicon. Once having the certainty of the presence of excess silicon it was proceed to obtain the I-V characteristic of the Al/SRO/Si structure as a device. The behavior of the Al/SRO/Si structure was analyzed with different parameters, such as: Ro, thickness of the SOR, areas. [Spanish] Los circuitos y equipos electronicos utilizan dispositivos de proteccion contra

Single column and two-column H-D-T distillation experiments at TSTA

International Nuclear Information System (INIS)

Yamanishi, T.; Yoshida, H.; Hirata, S.; Naito, T.; Naruse, Y.; Sherman, R.H.; Bartlit, J.R.; Anderson, J.L.

1988-01-01

Cryogenic distillation experiments were peformed at TSTA with H-D-T system by using a single column and a two-column cascade. In the single column experiment, fundamental engineering data such as the liquid holdup and the HETP were measured under a variety of operational condtions. The liquid holdup in the packed section was about 10 /approximately/ 15% of its superficial volume. The HETP values were from 4 to 6 cm, and increased slightly with the vapor velocity. The reflux ratio had no effect on the HETP. For the wo-colunn experiemnt, dynamic behavior of the cascade was observed. 8 refs., 7 figs., 2 tabs

Mutual passivation of group IV donors and isovalent nitrogen in diluted GaN{sub x}As{sub 1-x} alloys

Energy Technology Data Exchange (ETDEWEB)

Yu, K.M.; Wu, J.; Walukiewicz, W.; Shan, W.; Beeman, J.; Mars, D.E.; Chamberlin, D.R.; Scarpulla, M.A.; Dubon, O.D.; Ridgway, M.C.; Geisz, J.F.

2003-07-23

We demonstrate the mutual passivation of electrically active group IV donors and isovalent N atoms in the GaN{sub x}As{sub 1-x} alloy system. This phenomenon occurs through the formation of a donor-nitrogen bond in the nearest neighbor IV{sub Ga}-N{sub As} pairs. In Si doped GaInN{sub 0.017}As{sub 0.983} the electron concentration starts to decrease rapidly at an annealing temperature of 700 C from {approx} 3 x 10{sup 19}cm{sup -3} in the as-grown state to less than 10{sup 16}cm{sup -3} after an annealing at 900 C for 10 s. At the same time annealing of this sample at 950 C increases the gap by about 35 meV, corresponding to a reduction of the concentration of the active N atoms by an amount very close to the total Si concentration. We also show that the formation of Si{sub Ga}-N{sub As} pairs is controlled by the diffusion of Si via Ga vacancies to the nearest N{sub As} site. The general nature of this mutual passivation effect is confirmed by our study of Ge doped GaN{sub x}As{sub 1-x} layers formed by N and Ge co-implantation in GaAs followed by pulsed laser melting.

Epitaxial growth of Si1−xGex alloys and Ge on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition without substrate heating

International Nuclear Information System (INIS)

Ueno, Naofumi; Sakuraba, Masao; Murota, Junichi; Sato, Shigeo

2014-01-01

By using electron-cyclotron-resonance (ECR) Ar-plasma chemical vapor deposition (CVD) without substrate heating, the epitaxial growth process of Si 1−x Ge x alloy and Ge films deposited directly on dilute-HF-treated Si(100) was investigated. From the reflection high energy electron diffraction patterns of the deposited Si 1−x Ge x alloy (x = 0.50, 0.75) and Ge films on Si(100), it is confirmed that epitaxial growth can be realized without substrate heating, and that crystallinity degradation at larger film thickness is observed. The X-ray diffraction peak of the epitaxial films reveals the existence of large compressive strain, which is induced by lattice matching with the Si(100) substrate at smaller film thicknesses, as well as strain relaxation behavior at larger film thicknesses. The Ge fraction of Si 1−x Ge x thin film is in good agreement with the normalized GeH 4 partial pressure. The Si 1−x Ge x deposition rate increases with an increase of GeH 4 partial pressure. The GeH 4 partial pressure dependence of partial deposition rates [(Si or Ge fraction) × (Si 1−x Ge x thickness) / (deposition time)] shows that the Si partial deposition rate is slightly enhanced by the existence of Ge. From these results, it is proposed that the ECR-plasma CVD process can be utilized for Ge fraction control in highly-strained heterostructure formation of group IV semiconductors. - Highlights: • Si 1−x Ge x alloy and Ge were epitaxially grown on Si(100) without substrate heating. • Large strain and its relaxation behavior can be observed by X-ray diffraction. • Ge fraction of Si 1−x Ge x is equal to normalized GeH 4 partial pressure. • Si partial deposition rate is slightly enhanced by existence of Ge

ON THE ORIGIN OF THE HIGH COLUMN DENSITY TURNOVER IN THE H I COLUMN DENSITY DISTRIBUTION

International Nuclear Information System (INIS)

Erkal, Denis; Gnedin, Nickolay Y.; Kravtsov, Andrey V.

2012-01-01

We study the high column density regime of the H I column density distribution function and argue that there are two distinct features: a turnover at N H I ≈ 10 21 cm –2 , which is present at both z = 0 and z ≈ 3, and a lack of systems above N H I ≈ 10 22 cm –2 at z = 0. Using observations of the column density distribution, we argue that the H I-H 2 transition does not cause the turnover at N H I ≈ 10 21 cm –2 but can plausibly explain the turnover at N H I ∼> 10 22 cm –2 . We compute the H I column density distribution of individual galaxies in the THINGS sample and show that the turnover column density depends only weakly on metallicity. Furthermore, we show that the column density distribution of galaxies, corrected for inclination, is insensitive to the resolution of the H I map or to averaging in radial shells. Our results indicate that the similarity of H I column density distributions at z = 3 and 0 is due to the similarity of the maximum H I surface densities of high-z and low-z disks, set presumably by universal processes that shape properties of the gaseous disks of galaxies. Using fully cosmological simulations, we explore other candidate physical mechanisms that could produce a turnover in the column density distribution. We show that while turbulence within giant molecular clouds cannot affect the damped Lyα column density distribution, stellar feedback can affect it significantly if the feedback is sufficiently effective in removing gas from the central 2-3 kpc of high-redshift galaxies. Finally, we argue that it is meaningful to compare column densities averaged over ∼ kpc scales with those estimated from quasar spectra that probe sub-pc scales due to the steep power spectrum of H I column density fluctuations observed in nearby galaxies.

Adiabatic packed column supercritical fluid chromatography using a dual-zone still-air column heater.

Science.gov (United States)

Helmueller, Shawn C; Poe, Donald P; Kaczmarski, Krzysztof

2018-02-02

An approach to conducting SFC separations under pseudo-adiabatic condition utilizing a dual-zone column heater is described. The heater allows for efficient separations at low pressures above the critical temperature by imposing a temperature profile along the column wall that closely matches that for isenthalpic expansion of the fluid inside the column. As a result, the efficiency loss associated with the formation of radial temperature gradients in this difficult region can be largely avoided in packed analytical scale columns. For elution of n-octadecylbenzene at 60 °C with 5% methanol modifier and a flow rate of 3 mL/min, a 250 × 4.6-mm column packed with 5-micron Kinetex C18 particles began to lose efficiency (8% decrease in the number of theoretical plates) at outlet pressures below 142 bar in a traditional forced air oven. The corresponding outlet pressure for onset of excess efficiency loss was decreased to 121 bar when the column was operated in a commercial HPLC column heater, and to 104 bar in the new dual-zone heater operated in adiabatic mode, with corresponding increases in the retention factor for n-octadecylbenzene from 2.9 to 6.8 and 14, respectively. This approach allows for increased retention and efficient separations of otherwise weakly retained analytes. Applications are described for rapid SFC separation of an alkylbenzene mixture using a pressure ramp, and isobaric separation of a cannabinoid mixture. Copyright © 2018 Elsevier B.V. All rights reserved.

Si-based technologies for reduction of the pollutant leaching from landfills and mine tails.

Science.gov (United States)

Bocharnikova, E; Matichenkov, V; Jiang, J; Yuejin, C

2017-07-01

Monosilicic and polysilicic acids were shown to react with different types of the pollutants. The direction of these reactions can be managed by changing the monosilicic and polysilicic acid concentration in soil or water media. The objective of this study was to determine the effect of Si-treated calcium metallurgical slag and battery slag on the As, Se, Cd, Pb, Ni, Cr, and Hg mobility and bioavailability in mine tailings (Xikuangshan mine, Hunan, China). The results of column experiment showed that the Si-activated slags reduced leaching of As, Se, Cd, Pb, Ni, Cr, and Hg by 13-89% and transformed them into plant-unavailable forms. The greenhouse test has demonstrated that the Si-treated slags provided reinforced plant resistance to heavy metal toxicity and reduced pollutants in barley and pea leaves. Si-treated local solid slags could be used for creating the biogeochemical barriers on the pollutant streams from landfills or mine tailings sites.

Influence of pressure on the properties of chromatographic columns. II. The column hold-up volume.

Science.gov (United States)

Gritti, Fabrice; Martin, Michel; Guiochon, Georges

2005-04-08

The effect of the local pressure and of the average column pressure on the hold-up column volume was investigated between 1 and 400 bar, from a theoretical and an experimental point of view. Calculations based upon the elasticity of the solids involved (column wall and packing material) and the compressibility of the liquid phase show that the increase of the column hold-up volume with increasing pressure that is observed is correlated with (in order of decreasing importance): (1) the compressibility of the mobile phase (+1 to 5%); (2) in RPLC, the compressibility of the C18-bonded layer on the surface of the silica (+0.5 to 1%); and (3) the expansion of the column tube (columns packed with the pure Resolve silica (0% carbon), the derivatized Resolve-C18 (10% carbon) and the Symmetry-C18 (20% carbon) adsorbents, using water, methanol, or n-pentane as the mobile phase. These solvents have different compressibilities. However, 1% of the relative increase of the column hold-up volume that was observed when the pressure was raised is not accounted for by the compressibilities of either the solvent or the C18-bonded phase. It is due to the influence of the pressure on the retention behavior of thiourea, the compound used as tracer to measure the hold-up volume.

Compact electron beam focusing column

Science.gov (United States)

Persaud, Arun; Leung, Ka-Ngo; Reijonen, Jani

2001-12-01

A novel design for an electron beam focusing column has been developed at LBNL. The design is based on a low-energy spread multicusp plasma source which is used as a cathode for electron beam production. The focusing column is 10 mm in length. The electron beam is focused by means of electrostatic fields. The column is designed for a maximum voltage of 50 kV. Simulations of the electron trajectories have been performed by using the 2D simulation code IGUN and EGUN. The electron temperature has also been incorporated into the simulations. The electron beam simulations, column design and fabrication will be discussed in this presentation.

Enhanced PEC performance of nanoporous Si photoelectrodes by covering HfO2 and TiO2 passivation layers

Science.gov (United States)

Xing, Zhuo; Ren, Feng; Wu, Hengyi; Wu, Liang; Wang, Xuening; Wang, Jingli; Wan, Da; Zhang, Guozhen; Jiang, Changzhong

2017-03-01

Nanostructured Si as the high efficiency photoelectrode material is hard to keep stable in aqueous for water splitting. Capping a passivation layer on the surface of Si is an effective way of protecting from oxidation. However, it is still not clear in the different mechanisms and effects between insulating oxide materials and oxide semiconductor materials as passivation layers. Here, we compare the passivation effects, the photoelectrochemical (PEC) properties, and the corresponding mechanisms between the HfO2/nanoporous-Si and the TiO2/nanoporous-Si by I-V curves, Motte-schottky (MS) curves, and electrochemical impedance spectroscopy (EIS). Although the saturated photocurrent densities of the TiO2/nanoporous Si are lower than that of the HfO2/nanoporous Si, the former is more stable than the later.

Enhanced PEC performance of nanoporous Si photoelectrodes by covering HfO2 and TiO2 passivation layers.

Science.gov (United States)

Xing, Zhuo; Ren, Feng; Wu, Hengyi; Wu, Liang; Wang, Xuening; Wang, Jingli; Wan, Da; Zhang, Guozhen; Jiang, Changzhong

2017-03-02

Nanostructured Si as the high efficiency photoelectrode material is hard to keep stable in aqueous for water splitting. Capping a passivation layer on the surface of Si is an effective way of protecting from oxidation. However, it is still not clear in the different mechanisms and effects between insulating oxide materials and oxide semiconductor materials as passivation layers. Here, we compare the passivation effects, the photoelectrochemical (PEC) properties, and the corresponding mechanisms between the HfO 2 /nanoporous-Si and the TiO 2 /nanoporous-Si by I-V curves, Motte-schottky (MS) curves, and electrochemical impedance spectroscopy (EIS). Although the saturated photocurrent densities of the TiO 2 /nanoporous Si are lower than that of the HfO 2 /nanoporous Si, the former is more stable than the later.

Towards rhombohedral SiGe epitaxy on 150mm c-plane sapphire substrates

Science.gov (United States)

Duzik, Adam J.; Park, Yeonjoon; Choi, Sang H.

2015-04-01

Previous work demonstrated for the first time the ability to epitaxially grow uniform single crystal diamond cubic SiGe (111) films on trigonal sapphire (0001) substrates. While SiGe (111) forms two possible crystallographic twins on sapphire (0001), films consisting primarily of one twin were produced on up to 99.95% of the total wafer area. This permits new bandgap engineering possibilities and improved group IV based devices that can exploit the higher carrier mobility in Ge compared to Si. Models are proposed on the epitaxy of such dissimilar crystal structures based on the energetic favorability of crystallographic twins and surface reconstructions. This new method permits Ge (111) on sapphire (0001) epitaxy, rendering Ge an economically feasible replacement for Si in some applications, including higher efficiency Si/Ge/Si quantum well solar cells. Epitaxial SiGe films on sapphire showed a 280% increase in electron mobility and a 500% increase in hole mobility over single crystal Si. Moreover, Ge possesses a wider bandgap for solar spectrum conversion than Si, while the transparent sapphire substrate permits an inverted device structure, increasing the total efficiency to an estimated 30-40%, much higher than traditional Si solar cells. Hall Effect mobility measurements of the Ge layer in the Si/Ge/Si quantum well structure were performed to demonstrate the advantage in carrier mobility over a pure Si solar cell. Another application comes in the use of microelectromechanical devices technology, where high-resistivity Si is currently used as a substrate. Sapphire is a more resistive substrate and offers better performance via lower parasitic capacitance and higher film carrier mobility over the current Si-based technology.

Heterojunction photodetector based on graphene oxide sandwiched between ITO and p-Si

Science.gov (United States)

Ahmad, H.; Tajdidzadeh, M.; Thandavan, T. M. K.

2018-02-01

The drop casting method is utilized on indium tin oxide (ITO)-coated glass in order to prepare a sandwiched ITO/graphene oxide (ITO/GO) with silicon dioxide/p-type silicon (SiO2/p-Si) heterojunction photodetector. The partially sandwiched GO layer with SiO2/p-Si substrate exhibits dual characteristics as it showed good sensitivity towards the illumination of infrared (IR) laser at wavelength of 974 nm. Excellent photoconduction is also observed for current-voltage (I-V) characteristics at various laser powers. An external quantum efficiency greater than 1 for a direct current bias voltage of 0 and 3 V reveals significant photoresponsivity of the photodetector at various laser frequency modulation at 1, 5 and 9 Hz. The rise times are found to be 75, 72 and 70 μs for 1, 5 and 9 Hz while high fall times 455, 448 and 426 are measured for the respective frequency modulation. The fabricated ITO/GO-SiO2/p-Si sandwiched heterojunction photodetector can be considered as a good candidate for applications in the IR regions that do not require a high-speed response.

Admittance Scanning for Whole Column Detection.

Science.gov (United States)

Stamos, Brian N; Dasgupta, Purnendu K; Ohira, Shin-Ichi

2017-07-05

Whole column detection (WCD) is as old as chromatography itself. WCD requires an ability to interrogate column contents from the outside. Other than the obvious case of optical detection through a transparent column, admittance (often termed contactless conductance) measurements can also sense changes in the column contents (especially ionic content) from the outside without galvanic contact with the solution. We propose here electromechanically scanned admittance imaging and apply this to open tubular (OT) chromatography. The detector scans across the column; the length resolution depends on the scanning velocity and the data acquisition frequency, ultimately limited by the physical step resolution (40 μm in the present setup). Precision equal to this step resolution was observed for locating an interface between two immiscible liquids inside a 21 μm capillary. Mechanically, the maximum scanning speed was 100 mm/s, but at 1 kHz sampling rate and a time constant of 25 ms, the highest practical scan speed (no peak distortion) was 28 mm/s. At scanning speeds of 0, 4, and 28 mm/s, the S/N for 180 pL (zone length of 1.9 mm in a 11 μm i.d. column) of 500 μM KCl injected into water was 6450, 3850, and 1500, respectively. To facilitate constant and reproducible contact with the column regardless of minor variations in outer diameter, a double quadrupole electrode system was developed. Columns of significant length (>1 m) can be readily scanned. We demonstrate its applicability with both OT and commercial packed columns and explore uniformity of retention along a column, increasing S/N by stopped-flow repeat scans, etc. as unique applications.

Fabrication of p-{beta}-Fe{sub 1{minus}x}Mn{sub x}Si{sub 2}/nSi heterostructure diode and their electrical and optical properties

Energy Technology Data Exchange (ETDEWEB)

Takada, T; Katsumata, H; Makita, Y; Kobayashi, N; Hasegawa, M; Uekusa, S

1997-07-01

The authors report on the fabrication of p-type {beta}-FeSi{sub 2} layers on n-type Si(100) substrates and the investigation of their p-n diode characteristics. Since the undoped {beta}-FeSi{sub 2} layers have typically shown n-type conductivity, the p-type layers were formed by the introduction of Mn impurity into {beta}-FeSi{sub 2} layers using two types of doping methods; one is an Electron-Beam-Deposition (EBD) procedure of Fe{sub 1{minus}x}Mn{sub x}Si{sub 2} (x < {approximately}0.1) at room temperature and subsequent annealing at 900 C for 1--120 min, where FeSi{sub 2} ingots added with Mn({approximately}10%) were used as starting materials. The other is a {sup 55}Mn{sup +}-implantation into {beta}-FeSi{sub 2} layers formed by EBD and subsequent annealing at 850 C for 1--120 min. From van der Pauw measurements, p-type {beta}-Fe{sub 1{minus}x}Mn{sub x}Si{sub 2} layers with the resistivity of 0.0036--0.031 {Omega}{center{underscore}dot}cm and hole mobility of 11.9--89.0 cm{sup 2}/V{center{underscore}dot}sec were found to be successfully formed on n-Si substrates by both doping methods. The p-n diode characteristics of these heterostructure diodes were investigated by I-V and C-V measurements. The results indicate that the carrier distribution does not agree with either ideal one-side step or one-side slop junctions, although optical transmittance and reflectance measurements indicate that the silicide/Si interface is of good quality.

The effects of carbide column to swelling potential and Atterberg limit on expansive soil with column to soil drainage

Science.gov (United States)

Muamar Rifa'i, Alfian; Setiawan, Bambang; Djarwanti, Noegroho

2017-12-01

The expansive soil is soil that has a potential for swelling-shrinking due to changes in water content. Such behavior can exert enough force on building above to cause damage. The use of columns filled with additives such as Calcium Carbide is done to reduce the negative impact of expansive soil behavior. This study aims to determine the effect of carbide columns on expansive soil. Observations were made on swelling and spreading of carbides in the soil. 7 Carbide columns with 5 cm diameter and 20 cm height were installed into the soil with an inter-column spacing of 8.75 cm. Wetting is done through a pipe at the center of the carbide column for 20 days. Observations were conducted on expansive soil without carbide columns and expansive soil with carbide columns. The results showed that the addition of carbide column could reduce the percentage of swelling by 4.42%. Wetting through the center of the carbide column can help spread the carbide into the soil. The use of carbide columns can also decrease the rate of soil expansivity. After the addition of carbide column, the plasticity index value decreased from 71.76% to 4.3% and the shrinkage index decreased from 95.72% to 9.2%.

Test Review: Advanced Clinical Solutions for WAIS-IV and WMS-IV

Science.gov (United States)

Chu, Yiting; Lai, Mark H. C.; Xu, Yining; Zhou, Yuanyuan

2012-01-01

The authors review the "Advanced Clinical Solutions for WAIS-IV and WMS-IV". The "Advanced Clinical Solutions (ACS) for the Wechsler Adult Intelligence Scale-Fourth Edition" (WAIS-IV; Wechsler, 2008) and the "Wechsler Memory Scale-Fourth Edition" (WMS-IV; Wechsler, 2009) was published by Pearson in 2009. It is a…

Thermal process of an air column

International Nuclear Information System (INIS)

Lee, F.T.

1994-01-01

Thermal process of a hot air column is discussed based on laws of thermodynamics. The kinetic motion of the air mass in the column can be used as a power generator. Alternatively, the column can also function as a exhaust/cooler

Separation of rhodium(III and iridium(IV chlorido species by quaternary diammonium centres hosted on silica microparticles

Directory of Open Access Journals (Sweden)

A. Majavu

2017-12-01

Full Text Available Silica gel was functionalized with six different quaternary diammonium centres derived from ethylenediamine (EDA, tetramethylenediamine (TMDA, hexamethylenediamine (HMDA, 1,8-diaminooctane (OMDA, 1,10-diaminodecane (DMDA and 1,12-diaminododecane (DDMDA to produce Si-QUAT EDA, Si-QUAT TMDA, Si-QUAT HMDA, Si-QUAT OMDA, Si-QUAT DMDA and Si-QUAT DDMDA, respectively. The synthesized silica-based resins were characterized by means of FTIR, XPS, SEM, BET surface area, thermogravimetric analysis and elemental analysis. The materials were used to investigate the adsorption and separation of [RhCl5(H2O]2− and [IrCl6]2−. Batch studies (equilibrium and kinetic studies were conducted to study the adsorption of [RhCl5(H2O]2− and [IrCl6]2− onto Si-QUAT EDA, Si-QUAT TMDA, Si-QUAT HMDA, Si-QUAT OMDA, Si-QUAT DMDA and Si-QUAT DDMDA using single metal aqueous solutions. The Freundlich isotherm confirmed multilayer adsorption and the Freundlich constant (kf displayed the following ascending order; Si-QUAT EDA, Si-QUAT TMDA, Si-QUAT HMDA, Si-QUAT OMDA and Si-QUAT DMDA, and a decrease in kf for Si-QUAT DDMDA. Kinetic studies suggest a pseudo-first order kinetic model. Column studies were also conducted for a binary mixture of these metal ion chlorido species ([RhCl5(H2O]2− and [IrCl6]2−. The iridium loading capacities increased as the carbon spacer between the diammonium centres increased in the following order; Si-QUAT EDA, Si-QUAT TMDA, Si-QUAT HMDA, Si-QUAT OMDA and Si-QUAT DMDA (4.56 mg/g, 6.88 mg/g, 14.63 mg/g, 19.01 mg/g and 29.35 mg/g, respectively. It was observed that the iridium loading capacity of Si-QUAT DDMDA decreased to 8.90 mg/g. This paper presents iridium-specific materials that could be applied in solutions of secondary PGMs sources containing rhodium and iridium as well as in feed solutions from ore processing. Keywords: Silica gel, Quaternary diammonium centres, Rhodium, Iridium, Separation

Near infrared group IV optoelectronics and novel pre-cursors for CVD epitaxy

Science.gov (United States)

Hazbun, Ramsey Michael

Near infrared and mid infrared optoelectronic devices have become increasingly important for the telecommunications, security, and medical imaging industries. The addition of nitrogen to III-V alloys has been widely studied as a method of modifying the band gap for mid infrared (IR) applications. In xGa1-xSb1-y Ny/InAs strained-layer superlattices with type-II (staggered) energy offsets on GaSb substrates, were modeled using eight-band k˙p simulations to analyze the superlattice miniband energies. Three different zero-stress strain balance conditions are reported: fixed superlattice period thickness, fixed InAs well thickness, and fixed InxGa1-xSb 1-yNy barrier thickness. Optoelectronics have traditionally been the realm of III-V semiconductors due to their direct band gap, while integrated circuit chips have been the realm of Group IV semiconductors such as silicon because of its relative abundance and ease of use. Recently the alloying of Sn with Ge and Si has been shown to allow direct band-gap light emission. This presents the exciting prospect of integrating optoelectronics into current Group IV chip fabrication facilities. However, new approaches for low temperature growth are needed to realize these new SiGeSn alloys. Silicon-germanium epitaxy via ultra-high vacuum chemical vapor deposition has the advantage of allowing low process temperatures. Deposition processes are sensitive to substrate surface preparation and the time delay between oxide removal and epitaxial growth. A new monitoring process utilizing doped substrates and defect decoration etching is demonstrated to have controllable and unique sensitivity to interfacial contaminants. Doped substrates were prepared and subjected to various loading conditions prior to the growth of typical Si/SiGe bilayers. The defect densities were correlated to the concentration of interfacial oxygen suggesting this monitoring process may be an effective complement to monitoring via secondary ion mass spectrometry

Preperation and performance of {sup 99}Mo/{sup 99m}Tc chromatographic column generator based on zirconium molybdosilicate

Energy Technology Data Exchange (ETDEWEB)

Mostafa, M.; Saber, H.M.; El-Sadek, A.A. [Atomic Energy Authority, Cairo (Egypt). Hot Labs. Center; Nassar, M.Y. [Benha Univ. (Egypt). Chemistry Dept.

2016-08-01

Zirconium molybdosilicate (ZrMoSi) gel prepared using {sup 99}Mo radiotracer via peroxo route was used as a base material for {sup 99}Mo/{sup 99m}Tc column generator. The {sup 99m}Tc elution yield and {sup 99}Mo breakthrough in the eluate were studied as a function of the pH-value of gel precipitation, gel drying temperature and Zr: Mo: Si molar ratio. Precipitation pH-value of 2, drying temperature of 100 C and Zr: Mo: Si molar ratio of 0.5: 0.5: 1 were found to be the optimum conditions achieving {sup 99m}Tc elution yield of 82% and {sup 99}Mo breakthrough of 1.0 x 10{sup -3}%. The gel prepared with the optimum conditions was characterized by BET surface area and pore size analyzer, IR spectroscopy, thermal analysis (TGA and DTA), XRD, XRF and FESEM. Technetium-99m eluted from the optimum ZrMoSi {sup 99}Mo/{sup 99m}Tc generator was found to have a high radiochemical purity (98% as {sup 99m}TcO{sub 4}{sup -}) and chemical purity meeting criteria of clinical grade.

PVC Based Membrane of Ti(IV Iodovanadate for Pb(II Determination

Directory of Open Access Journals (Sweden)

Mu. Naushad

2008-08-01

Full Text Available Ti(IV iodovanadate has been synthesized by mixing a mixture of aqueous solutions of 0.1 M sodium vanadate and 0.1 M potassium iodate with 0.1 M solution of Ti(IV chloride at pH 1.0. Distribution coefficients (Kd of various metal ions were determined on the column of Ti(IV iodovanadate which showed the selectivity of Pb(II ions by this cation exchange material. So Ti(IV iodovanadate has been used as an electoactive material for the construction of Pb(II selective electrode. The main purpose of this study is to develop an inexpensive, simple and reliable ion-selective electrode for Pb(II determination. The sensor exhibit Nernstian response for Pb(II ions over a wide concentration range of 1 x 10-7 M to 1 x 10-1 M with a slope of 30±0.4 mV per decade of activity. The electrode is suitable for use in aqueous solution in a pH range of 2-7.2 with a response time of 10 second. The membrane electrode can be used at least for 4 months without any divergence in potential. The selectivity coefficients were determined by the mixed solution method and revealed that the electrode was selective for Pb(II ions in the presence of interfering cations. The sensor could be used as an indicator electrode in the potentiometric titration of Pb(II ions with EDTA. The practical applicability of the proposed sensor has been reported for Pb(II determination in a standard rock sample and water sample. The results are found to be in good agreement with those obtained by using conventional methods.

Direct complexonometric determination of thorium (IV), uranium (IV), neptunium (IV), plutonium (IV) by titration of diethylenetriaminepentaacetic acid with xylenol orange as indicator

International Nuclear Information System (INIS)

Rykov, A.G.; Piskunov, E.M.; Timofeev, G.A.

1975-01-01

The purpose of the present work was to develop a method of determining Th(IV), U(IV), Np(N) and Pu(IV) in acid solutions by titration with diethylenetriamine pentacetic acid, the indicator being xylenol orange. It has been established that Th, U, Np and Pu can be determined to within 0.5-1.5%. Th and U in quantities of tens of milligrams can be determined with greater accuracy, attaining hundredths of one per cent. During titration the determination is not hindered by singly- and doubly-charged metal ions, trivalent lanthanides and actinides, except plutonium. The proposed method can be used to determine U(IV) in the presence of considerable quantities of U(VI) and Np(IV) in the presence of Np(V). Total concentrations of uranium or neptunium are determined by reducing uranium (VI) or neptunium (V) by a standard method (for example, using metallic lead, cadmium or zinc amalgam) to the tetravalent state and applying the method described in the paper. (E.P.)

Solvent extraction columns

International Nuclear Information System (INIS)

Middleton, P.; Smith, J.R.

1979-01-01

In pulsed columns for use in solvent extraction processes, e.g. the reprocessing of nuclear fuel, the horizontal perforated plates inside the column are separated by interplate spacers manufactured from metallic neutron absorbing material. The spacer may be in the form of a spiral or concentric circles separated by radial limbs, or may be of egg-box construction. Suitable neutron absorbing materials include stainless steel containing boron or gadolinium, hafnium metal or alloys of hafnium. (UK)

Spin-polarized photoemission from SiGe heterostructures

Energy Technology Data Exchange (ETDEWEB)

Ferrari, A.; Bottegoni, F.; Isella, G.; Cecchi, S.; Chrastina, D.; Finazzi, M.; Ciccacci, F. [LNESS-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)

2013-12-04

We apply the principles of Optical Orientation to measure by Mott polarimetry the spin polarization of electrons photoemitted from different group-IV heterostructures. The maximum measured spin polarization, obtained from a Ge/Si{sub 0.31}Ge{sub 0.69} strained film, undoubtedly exceeds the maximum value of 50% attainable in bulk structures. The explanation we give for this result lies in the enhanced band orbital mixing between light hole and split-off valence bands as a consequence of the compressive strain experienced by the thin Ge layer.

Preliminary calculations of stress change of fuel pin using SiC/SiC composites for GFR with changing of thermal conductivity degradation by irradiation

International Nuclear Information System (INIS)

Lee, J. K.; Naganuma, M.

2006-01-01

Gas cooled Fast Reactor (GFR) is being researched as a candidate concept of Generation IV international Forum. As a main feature of GFR, it should be maintained high temperature and pressure of coolant gas for heat transfer efficiency. Such a demanding environment requires high-temperature-resistant structural materials distinguished from traditional steel material. Consequently, ceramics are promising candidate material of core components. Especially, Silicon Carbide fiber reinforced Silicon Carbide composites (SiC/SiC) have encouraging characteristics such as refractoriness, low activation and toughness. Application of new material to core components must be explained by the viewpoint of engineering validity. Therefore, present study surveyed that current report for mechanical strength and thermal conductivity of SiC/SiC composites. According to the reports, neutron irradiation environment degraded mechanical properties of SiC/SiC composites. To confirm applicability to core components, model of fuel pin using SiC/SiC composites was assumed with feasible mechanical properties. Furthermore, it was calculated and estimated that the stress caused by temperature variation of inner and outer side of assumed model of cladding tube. Stress was calculated by changing of input date such as thickness of cladding tube, temperature variation, thermal conductivity and linear power. In the range of this study, the most important factor was identified as degradation of thermal conductivity by irradiation. It caused a significant stress and limited a geometrical design of fuel pin. It was discussed that the differences of heat transfer between isotropic and anisotropic materials like a metal and composites. These results should be helpful not only to determine a design factor of core component but also to indicate an improvement direction of SiC/SiC composites. Through these work, reliability and safety of GFR will be increased

120 MeV Ag ion induced effects in Au/HfO2/Si MOSCAPs

Science.gov (United States)

Manikanthababu, N.; Prajna, K.; Pathak, A. P.; Rao, S. V. S. Nageswara

2018-05-01

HfO2/Si thinfilms were deposited by RF sputtering technique. 120 MeV Ag ion irradiation has been used to study the electrical properties of Au/HfO2/Si MOSCAPs. SHI (120 MeV Ag) induced annealing, defects creation and intermixing effects on the electrical properties of these systems have been studied. Here, we have observed that the high electronic excitation can cause a significant reduction of leakage currents in these MOSCAP devices. Various quantum mechanical tunneling phenomenon has been observed from the I-V characteristics.

Junction parameters and characterization of Au/n-Ge{sub 15}In{sub 5}Se{sub 80}/p-Si/Al heterojunction

Energy Technology Data Exchange (ETDEWEB)

El-Nahass, M.M.; El-Shazly, E.A.A. [Ain Shams University, Physics Department, Faculty of Education, Roxy, Cairo (Egypt); Ali, M.H. [Ain Shams University, Physics Department, Faculty of Science, Abassia, Cairo (Egypt); Zedan, I.T. [High Institute of Engineering and Technology, Basic Science Department, El-Arish, North Sinai (Egypt)

2016-08-15

The analysis of the electrical properties of Au/n-Ge{sub 15}In{sub 5}Se{sub 80}/p-Si/Al heterojunction is examined. I-V characteristics show diode-like behavior. The series resistance is found to decrease with increasing the temperature in three different methods of calculations. The thermionic emission mechanism is found to be the operating mechanism at relatively low forward voltages (V < 0.25). While, at relatively high forward voltage, the space charge limited conduction is the operating mechanism. The rectification ratio, ideality factor, barrier height, total trap concentration and built-in voltage are determined. The capacitance-voltage (C-V) characteristics of Au/n-Ge{sub 15}In{sub 5}Se{sub 80}/p-Si/Al heterojunction are also investigated. The I-V curve of the Au/n-Ge{sub 15}In{sub 5}Se{sub 80}/p-Si/Al heterojunction in the dark and after illumination is clarified. (orig.)

Determination of Low Level Concentrations of Metals by Means of Sequential Injection (SI) and Lab-on-Valve (LOV) Methodologies

DEFF Research Database (Denmark)

Hansen, Elo Harald; Miró, Manuel; Petersen, Roongrat

/emission spectrometry (FAAS, ETAAS, ICP-AES, ICP-MS). The lecture will initially give an overview of various automated alternatives for facilitating appropriate SI/LOV-separation and pre-concentration schemes of metals in liquid samples, including examples of solid-phase extraction with permanent columns or renewable...

L-arginine mediated renaturation enhances yield of human, α6 Type IV collagen non-collagenous domain from bacterial inclusion bodies.

Science.gov (United States)

Gunda, Venugopal; Boosani, Chandra Shekhar; Verma, Raj Kumar; Guda, Chittibabu; Sudhakar, Yakkanti Akul

2012-10-01

The anti-angiogenic, carboxy terminal non-collagenous domain (NC1) derived from human Collagen type IV alpha 6 chain, [α6(IV)NC1] or hexastatin, was earlier obtained using different recombinant methods of expression in bacterial systems. However, the effect of L-arginine mediated renaturation in enhancing the relative yields of this protein from bacterial inclusion bodies has not been evaluated. In the present study, direct stirring and on-column renaturation methods using L-arginine and different size exclusion chromatography matrices were applied for enhancing the solubility in purifying the recombinant α6(IV)NC1 from bacterial inclusion bodies. This methodology enabled purification of higher quantities of soluble protein from inclusion bodies, which inhibited endothelial cell proliferation, migration and tube formation. Thus, the scope for L-arginine mediated renaturation in obtaining higher yields of soluble, biologically active NC1 domain from bacterial inclusion bodies was evaluated.

PULSE COLUMN

Science.gov (United States)

Grimmett, E.S.

1964-01-01

This patent covers a continuous countercurrent liquidsolids contactor column having a number of contactor states each comprising a perforated plate, a layer of balls, and a downcomer tube; a liquid-pulsing piston; and a solids discharger formed of a conical section at the bottom of the column, and a tubular extension on the lowest downcomer terminating in the conical section. Between the conical section and the downcomer extension is formed a small annular opening, through which solids fall coming through the perforated plate of the lowest contactor stage. This annular opening is small enough that the pressure drop thereacross is greater than the pressure drop upward through the lowest contactor stage. (AEC)

Performance of RC columns with partial length corrosion

International Nuclear Information System (INIS)

Wang Xiaohui; Liang Fayun

2008-01-01

Experimental and analytical studies on the load capacity of reinforced concrete (RC) columns with partial length corrosion are presented, where only a fraction of the column length was corroded. Twelve simply supported columns were eccentrically loaded. The primary variables were partial length corrosion in tensile or compressive zone and the corrosion level within this length. The failure of the corroded column occurs in the partial length, mainly developed from or located nearby or merged with the longitudinal corrosion cracks. For RC column with large eccentricity, load capacity of the column is mainly influenced by the partial length corrosion in tensile zone; while for RC column with small eccentricity, load capacity of the column greatly decreases due to the partial length corrosion in compressive zone. The destruction of the longitudinally mechanical integrality of the column in the partial length leads to this great reduction of the load capacity of the RC column

Ordering at Si(111)/o-Si and Si(111)/SiO2 Interfaces

DEFF Research Database (Denmark)

Robinson, I. K.; Waskiewicz, W. K.; Tung, R. T.

1986-01-01

X-ray diffraction has been used to measure the intensity profile of the two-dimensional rods of scattering from a single interface buried inside a bulk material. In both Si(111)/a-Si and Si(111)/SiO2 examples there are features in the perpendicular-momentum-transfer dependence which are not expec...... are not expected from an ideal sharp interface. The diffraction profiles are explained by models with partially ordered layers extending into the amorphous region. In the Si(111)/a-Si case there is clear evidence of stacking faults which are attributed to residual 7×7 reconstruction....

A stochastic view on column efficiency.

Science.gov (United States)

Gritti, Fabrice

2018-03-09

A stochastic model of transcolumn eddy dispersion along packed beds was derived. It was based on the calculation of the mean travel time of a single analyte molecule from one radial position to another. The exchange mechanism between two radial positions was governed by the transverse dispersion of the analyte across the column. The radial velocity distribution was obtained by flow simulations in a focused-ion-beam scanning electron microscopy (FIB-SEM) based 3D reconstruction from a 2.1 mm × 50 mm column packed with 2 μm BEH-C 18 particles. Accordingly, the packed bed was divided into three coaxial and uniform zones: (1) a 1.4 particle diameter wide, ordered, and loose packing at the column wall (velocity u w ), (2) an intermediate 130 μm wide, random, and dense packing (velocity u i ), and (3) the bulk packing in the center of the column (velocity u c ). First, the validity of this proposed stochastic model was tested by adjusting the predicted to the observed reduced van Deemter plots of a 2.1 mm × 50 mm column packed with 2 μm BEH-C 18 fully porous particles (FPPs). An excellent agreement was found for u i  = 0.93u c , a result fully consistent with the FIB-SEM observation (u i  = 0.95u c ). Next, the model was used to measure u i  = 0.94u c for 2.1 mm × 100 mm column packed with 1.6 μm Cortecs-C 18 superficially porous particles (SPPs). The relative velocity bias across columns packed with SPPs is then barely smaller than that observed in columns packed with FPPs (+6% versus + 7%). u w =1.8u i is measured for a 75 μm × 1 m capillary column packed with 2 μm BEH-C 18 particles. Despite this large wall-to-center velocity bias (+80%), the presence of the thin and ordered wall packing layer has no negative impact on the kinetic performance of capillary columns. Finally, the stochastic model of long-range eddy dispersion explains why analytical (2.1-4.6 mm i.d.) and capillary (columns can all be

Photoelectric characteristics of CH3NH3PbI3/p-Si heterojunction

Science.gov (United States)

Yamei, Wu; Ruixia, Yang; Hanmin, Tian; Shuai, Chen

2016-05-01

Organic-inorganic hybrid perovskite CH3NH3PbI3 film is prepared on p-type silicon substrate using the one-step solution method to form a CH3NH3PbI3/p-Si heterojunction. The film morphology and structure are characterized by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The photoelectric properties of the CH3NH3PbI3/p-Si heterojunction are studied by testing the current-voltage (I-V) with and without illumination and capacitance-voltage (C-V) characteristics. It turns out from the I-V curve without illumination that the CH3NH3PbI3/p-Si heterojunction has a rectifier feature with the rectification ratio over 70 at the bias of ±5 V. Also, there appears a photoelectric conversion phenomenon on this heterojunction with a short circuit current (Isc) of 0.16 μA and an open circuit voltage (Voc) of about 10 mV The high frequency C-V characteristic of the Ag/CH3NH3PbI3/p-Si heterojunction turns out to be similar to that of the metal-insulator-semiconductor (MIS) structure, and a parallel translation of the C-V curve along the forward voltage axis is found. This parallel translation means the existence of defects at the CH3NH3PbI3/p-Si interface and positive fixed charges in the CH3NH3PbI3 layer. The defects at the interface of the CH3NH3PbI3/p-Si heterojunction result in the dramatic decline of the Voc. Besides, the C-V test of CH3NH3PbI3 film shows a non-linear dielectric property and the dielectric value is about 4.64 as calculated. Project supported by the Hebei Province Natural Science Foundation of China (No. F2014202184) and the Tianjin Natural Science Foundation of China (No. 15JCZDJC37800).

Effects of electron-irradiation on electrical properties of AgCa/Si Schottky diodes

International Nuclear Information System (INIS)

Harmatha, L.; Zizka, M.; Sagatova, A.; Nemec, M.; Hybler, P.

2013-01-01

This contribution presents the results of the current-voltage I-V and the capacitance-voltage C-V measurement on the Schottky diodes with the AgCa gate on the silicon n-type substrate. The Si substrate was irradiated by 5 MeV electrons with a different dose value before the Schottky diode preparation. (authors)

Evaluation of a novel PTFE material for use as a means for separation and preconcentration of trace levels of metal ions in sequential injection (SI) and sequential injection lab-on-valve (SI-LOV) systems. Determination of cadmium (II) with detection by electrothermal atomic absorption spectrometry

DEFF Research Database (Denmark)

Long, Xiangbao; Chomchoei, Roongrat; Hansen, Elo Harald

2004-01-01

with an external packed column and in a sequential injection lab-on-valve (SI-LOV) system. Employed for the determination of cadmium(II), complexed with diethyldithiophosphate (DDPA), and detection by electrothermal atomic absorption spectrometry (ETAAS), its performance was compared to that of a previously used...

29 CFR 1926.755 - Column anchorage.

Science.gov (United States)

2010-07-01

... 29 Labor 8 2010-07-01 2010-07-01 false Column anchorage. 1926.755 Section 1926.755 Labor... (CONTINUED) SAFETY AND HEALTH REGULATIONS FOR CONSTRUCTION Steel Erection § 1926.755 Column anchorage. (a) General requirements for erection stability. (1) All columns shall be anchored by a minimum of 4 anchor...

Adsorption columns for use in radioimmunoassays

International Nuclear Information System (INIS)

1976-01-01

Adsorption columns are provided which can be utilized in radioimmunoassay systems such as those involving the separation of antibody-antigen complexes from free antigens. The preparation of the columns includes the treatment of retaining substrate material to render it hydrophilic, preparation and degassing of the separation material and loading the column

Intercalation of Si between MoS2 layers

Directory of Open Access Journals (Sweden)

Rik van Bremen

2017-09-01

Full Text Available We report a combined experimental and theoretical study of the growth of sub-monolayer amounts of silicon (Si on molybdenum disulfide (MoS2. At room temperature and low deposition rates we have found compelling evidence that the deposited Si atoms intercalate between the MoS2 layers. Our evidence relies on several experimental observations: (1 Upon the deposition of Si on pristine MoS2 the morphology of the surface transforms from a smooth surface to a hill-and-valley surface. The lattice constant of the hill-and-valley structure amounts to 3.16 Å, which is exactly the lattice constant of pristine MoS2. (2 The transitions from hills to valleys are not abrupt, as one would expect for epitaxial islands growing on-top of a substrate, but very gradual. (3 I(V scanning tunneling spectroscopy spectra recorded at the hills and valleys reveal no noteworthy differences. (4 Spatial maps of dI/dz reveal that the surface exhibits a uniform work function and a lattice constant of 3.16 Å. (5 X-ray photo-electron spectroscopy measurements reveal that sputtering of the MoS2/Si substrate does not lead to a decrease, but an increase of the relative Si signal. Based on these experimental observations we have to conclude that deposited Si atoms do not reside on the MoS2 surface, but rather intercalate between the MoS2 layers. Our conclusion that Si intercalates upon the deposition on MoS2 is at variance with the interpretation by Chiappe et al. (Adv. Mater. 2014, 26, 2096–2101 that silicon forms a highly strained epitaxial layer on MoS2. Finally, density functional theory calculations indicate that silicene clusters encapsulated by MoS2 are stable.

Feasibility study on the application of carbide (ZrC, SiC) for VHTR

Energy Technology Data Exchange (ETDEWEB)

Park, Ji Yeon; Kim, Weon Ju; Jung, Choong Hwan; Ryu, Woo Seog; Kim, Si Hyeong; Jang, Moon Hee; Lee, Young Woo

2006-08-15

A feasibility study on the coating process of ZrC for the TRISO nuclear fuel and applications of SiC as high temperature materials for the core components has performed to develop the fabrication process for the advanced ZrC TRISO fuels and the high temperature structural components for VHTR, respectively. In the case of ZrC coating, studies were focused on the comparisons of the developed coating processes for screening of our technology, the evaluations of the reactions parameters for a ZrC deposition by the thermodynamic calculations and the preliminary coating experiments by the chloride process. With relate to SiC ceramics, our interesting items are as followings; an analysis of applications and specifications of the SiC components and collections of the SiC properties and establishments of data base. For these purposes, applications of SiC ceramics for the GEN-IV related components as well as the fusion reactor related ones were reviewed. Additionally, the on-going activities with related to the ZrC clad and the SiC composites discussed in the VHTR GIF-PMB, were reviewed to make the further research plans at the section 1 in chapter 3.

Effect of doping on structural, optical and electrical properties of nanostructure ZnO films deposited onto a-Si:H/Si heterojunction

Science.gov (United States)

Sali, S.; Boumaour, M.; Kermadi, S.; Keffous, A.; Kechouane, M.

2012-09-01

We investigated the structural; optical and electrical properties of ZnO thin films as the n-type semiconductor for silicon a-Si:H/Si heterojunction photodiodes. The ZnO film forms the front contact of the super-strata solar cell and has to exhibit good electrical (high conductivity) and optical (high transmittance) properties. In this paper we focused our attention on the influence of doping on device performance. The results show that the X-ray diffraction (XRD) spectra revealed a preferred orientation of the crystallites along c-axis. SEM images show that all films display a granular, polycrystalline morphology and the ZnO:Al exhibits a better grain uniformity. The transmittance of the doped films was found to be higher when compared to undoped ZnO. A low resistivity of the order of 2.8 × 10-4 Ω cm is obtained for ZnO:Al using 0.4 M concentration of zinc acetate. The photoluminescence (PL) spectra exhibit a blue band with two peaks centered at 442 nm (2.80 eV) and 490 nm (2.53 eV). It is noted that after doping the ZnO films a shift of the band by 22 nm (0.15 eV) is recorded and a high luminescence occurs when using Al as a dopant. Dark I-V curves of ZnO/a-Si:H/Si structure showed large difference, which means there is a kind of barrier to current flow between ZnO and a-Si:H layer. Doping films was applied and the turn-on voltages are around 0.6 V. Under reverse bias, the current of the ZnO/a-Si:H/Si heterojunction is larger than that of ZnO:Al/a-Si:H/Si. The improvement with ZnO:Al is attributed to a higher number of generated carriers in the nanostructure (due to the higher transmittance and a higher luminescence) that increases the probability of collisions.

NMFS Water Column Sonar Database

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — Water column sonar data are an important component of fishery independent surveys, habitat studies and other research. NMFS water column sonar data are archived here.

Congenital bilateral neuroblastoma (stage IV-S): case report

International Nuclear Information System (INIS)

Lee, Jeong Hee; Lee, Hee Jung; Woo, Seong Ku; Lee, Sang Rak; Kim, Heung Sik

2002-01-01

Congenital neonatal neuroblastoma is not uncommon but bilateral adrenal neuroblastoma is rare, accounting for about ten percent of neuroblastomas in children. We report the US the MR findings of a stage IV-S congenital bilateral neuroblastoma occurring in a one-day-old neonate

Structure and magnetism in novel group IV element-based magnetic materials

Energy Technology Data Exchange (ETDEWEB)

Tsui, Frank [Univ. of North Carolina, Chapel Hill, NC (United States)

2013-08-14

The project is to investigate structure, magnetism and spin dependent states of novel group IV element-based magnetic thin films and heterostructures as a function of composition and epitaxial constraints. The materials systems of interest are Si-compatible epitaxial films and heterostructures of Si/Ge-based magnetic ternary alloys grown by non-equilibrium molecular beam epitaxy (MBE) techniques, specifically doped magnetic semiconductors (DMS) and half-metallic Heusler alloys. Systematic structural, chemical, magnetic, and electrical measurements are carried out, using x-ray microbeam techniques, magnetotunneling spectroscopy and microscopy, and magnetotransport. The work is aimed at elucidating the nature and interplay between structure, chemical order, magnetism, and spin-dependent states in these novel materials, at developing materials and techniques to realize and control fully spin polarized states, and at exploring fundamental processes that stabilize the epitaxial magnetic nanostructures and control the electronic and magnetic states in these complex materials. Combinatorial approach provides the means for the systematic studies, and the complex nature of the work necessitates this approach.

Investigating the Effect of Column Geometry on Separation Efficiency using 3D Printed Liquid Chromatographic Columns Containing Polymer Monolithic Phases.

Science.gov (United States)

Gupta, Vipul; Beirne, Stephen; Nesterenko, Pavel N; Paull, Brett

2018-01-16

Effect of column geometry on the liquid chromatographic separations using 3D printed liquid chromatographic columns with in-column polymerized monoliths has been studied. Three different liquid chromatographic columns were designed and 3D printed in titanium as 2D serpentine, 3D spiral, and 3D serpentine columns, of equal length and i.d. Successful in-column thermal polymerization of mechanically stable poly(BuMA-co-EDMA) monoliths was achieved within each design without any significant structural differences between phases. Van Deemter plots indicated higher efficiencies for the 3D serpentine chromatographic columns with higher aspect ratio turns at higher linear velocities and smaller analysis times as compared to their counterpart columns with lower aspect ratio turns. Computational fluid dynamic simulations of a basic monolithic structure indicated 44%, 90%, 100%, and 118% higher flow through narrow channels in the curved monolithic configuration as compared to the straight monolithic configuration at linear velocities of 1, 2.5, 5, and 10 mm s -1 , respectively. Isocratic RPLC separations with the 3D serpentine column resulted in an average 23% and 245% (8 solutes) increase in the number of theoretical plates as compared to the 3D spiral and 2D serpentine columns, respectively. Gradient RPLC separations with the 3D serpentine column resulted in an average 15% and 82% (8 solutes) increase in the peak capacity as compared to the 3D spiral and 2D serpentine columns, respectively. Use of the 3D serpentine column at a higher flow rate, as compared to the 3D spiral column, provided a 58% reduction in the analysis time and 74% increase in the peak capacity for the isocratic separations of the small molecules and the gradient separations of proteins, respectively.

Unexpected current lowering of Mg contact on SI-GaAs

International Nuclear Information System (INIS)

Dubecky, F.; Bohacek, F.; Sekacova, M.; Hubik, P.; Kindl, D.; Gombia, E.; Necas, V.

2016-01-01

Four SI-GaAs surface barrier diodes with different contact metallization and/or contact areas were prepared and characterized in terms of the I-V measurements. The possibility of tuning their performance has been demonstrated by virtue of the device engineering, involving a low work-function Mg metallization and manipulation of the contact area. A device with a remarkable current lowering, by almost two orders of magnitude with respect to the 'standard' sample, was prepared. Such a possibility opens new application choices for SI-GaAs not recognized before. We suggest its use, with appropriate metal contact/s, in devices with a low current at low-voltage requirements, such as photonic devices, photodiodes or different physical sensors. The reported data and evidence from the existing literature rule out the widely accepted mechanism of ohmic/bulk-limited and thermionic emission transport as general rules for the interpretation of the low-bias regime in SI-GaAs diodes. The strong blocking ability of the low work function Mg contact was attributed to the downwards band bending, near contact charge carriers accumulation and the corresponding lowering of the bulk SI-GaAs free carrier concentration. (authors)

ACME-III and ACME-IV Final Campaign Reports

Energy Technology Data Exchange (ETDEWEB)

Biraud, S. C. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

2016-01-01

The goals of the Atmospheric Radiation Measurement (ARM) Climate Research Facility’s third and fourth Airborne Carbon Measurements (ACME) field campaigns, ACME-III and ACME-IV, are: 1) to measure and model the exchange of CO₂, water vapor, and other greenhouse gases by the natural, agricultural, and industrial ecosystems of the Southern Great Plains (SGP) region; 2) to develop quantitative approaches to relate these local fluxes to the concentration of greenhouse gases measured at the Central Facility tower and in the atmospheric column above the ARM SGP Central Facility, 3) to develop and test bottom-up measurement and modeling approaches to estimate regional scale carbon balances, and 4) to develop and test inverse modeling approaches to estimate regional scale carbon balance and anthropogenic sources over continental regions. Regular soundings of the atmosphere from near the surface into the mid-troposphere are essential for this research.

Evaluation of Packed Distillation Columns I - Atmospheric Pressure

National Research Council Canada - National Science Library

Reynolds, Thaine

1951-01-01

.... Four column-packing combinations of the glass columns and four column-packing combinations of the steel columns were investigated at atmospheric pressure using a test mixture of methylcyclohexane...

Center column design of the PLT

International Nuclear Information System (INIS)

Citrolo, J.; Frankenberg, J.

1975-01-01

The center column of the PLT machine is a secondary support member for the toroidal field coils. Its purpose is to decrease the bending moment at the nose of the coils. The center column design was to have been a stainless steel casting with the toroidal field coils grouped around the casting at installation, trapping it in place. However, the castings developed cracks during fabrication and were unsuitable for use. Installation of the coils proceeded without the center column. It then became necessary to redesign a center column which would be capable of installation with the toroidal field coils in place. The final design consists of three A-286 forgings. This paper discusses the final center column design and the influence that new knowledge, obtained during the power tests, had on the new design

Oxide meets silicide. Synthesis and single-crystal structure of Ca{sub 21}SrSi{sub 24}O{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Reckeweg, Olaf; DiSalvo, Francis J. [Cornell Univ., Ithaca, NY (United States). Dept. of Chemistry and Chemical Biology

2017-06-01

A few black, rectangular thin plates of Ca{sub 21}SrSi{sub 24}O{sub 2} were obtained by serendipity in a solid-state reaction of calcium metal, strontium chloride and silicon powder at 1200 K for 2 days designed to produce 'Ca{sub 2}SrCl{sub 2}[Si{sub 3}]'. The title compound forms next to some CaSi and some remaining educts. Ca{sub 21}SrSi{sub 24}O{sub 2} crystallizes in the monoclinic space group C2/m (no. 12) with unit cell parameters of a=1895.2(2), b=450.63(5) and c=1397.33(18) pm and β=112.008(7) (Z=1). The title compound shows planar, eight-membered, kinked Si{sub 8} chains with Si-Si distances between 241.4 and 245.0 pm indicating bonding interactions and kinked 'rope ladders' connecting the chains with interatomic Si-Si distances in the range 268.1-274.7 pm. Embedded in between these silicon substructures are columns of oxygen centered, apex sharing [(Ca{sub 1-x} Sr{sub x}){sub 6/2}O] octahedra and calcium ions.

The handedness of historiated spiral columns.

Science.gov (United States)

Couzin, Robert

2017-09-01

Trajan's Column in Rome (AD 113) was the model for a modest number of other spiral columns decorated with figural, narrative imagery from antiquity to the present day. Most of these wind upwards to the right, often with a congruent spiral staircase within. A brief introductory consideration of antique screw direction in mechanical devices and fluted columns suggests that the former may have been affected by the handedness of designers and the latter by a preference for symmetry. However, for the historiated columns that are the main focus of this article, the determining factor was likely script direction. The manner in which this operated is considered, as well as competing mechanisms that might explain exceptions. A related phenomenon is the reversal of the spiral in a non-trivial number of reproductions of the antique columns, from Roman coinage to Renaissance and baroque drawings and engravings. Finally, the consistent inattention in academic literature to the spiral direction of historiated columns and the repeated publication of erroneous earlier reproductions warrants further consideration.

Column-oriented database management systems

OpenAIRE

Možina, David

2013-01-01

In the following thesis I will present column-oriented database. Among other things, I will answer on a question why there is a need for a column-oriented database. In recent years there have been a lot of attention regarding a column-oriented database, even if the existence of a columnar database management systems dates back in the early seventies of the last century. I will compare both systems for a database management – a colum-oriented database system and a row-oriented database system ...

A Room-temperature Hydrogen Gas Sensor Using Palladium-decorated Single-Walled Carbon Nanotube/Si Heterojunction

Directory of Open Access Journals (Sweden)

Yong Gang DU

2016-05-01

Full Text Available We report a room-temperature (RT hydrogen gas (H2 sensor based on palladium-decorated single-walled carbon nanotube/Si (Pd-SWNTs/Si heterojunction. The current-voltage (I-V curves of the Pd-SWNTs/Si heterojunction in different concentrations of H2 were measured. The experimental results reveal that the Pd-SWNTs/Si heterojunction exhibits high H2 response. After exposure to 0.02 %, 0.05 %, and 0.1 % H2 for 10 min, the resistance of the heterojunction increases dramatically. The response is 122 %, 269 % and 457 %, respectively. A simple interfacial theory is used to understand the gas sensitivity results. This approach is a step toward future CNTs-based gas sensors for practical application.DOI: http://dx.doi.org/10.5755/j01.ms.22.2.12925

Crack-free AlGaN-based UV LED on Si(111) substrate

Energy Technology Data Exchange (ETDEWEB)

Saengkaew, P.; Dadgar, A.; Blaesing, J.; Witte, H.; Mueller, M.; Guenther, K.M.; Fey, T.; Bastek, B.; Bertram, F.; Kurnatowski, M. von; Wieneke, M.; Hempel, T.; Veit, P.; Clos, R.; Christen, J.; Krost, A. [FNW/IEP/AHE Otto-von-Guericke-Universitaet Magdeburg (Germany)

2010-07-01

To achieve low-cost UV LEDs on large-diameter substrates it is a very interesting approach to grow AlGaN on low-cost Si substrates. Here, AlGaN layers and AlGaN LED structures grown on Si(111) were additionally monitored by in-situ curvature measurements. They show that with the insertion of AlN-based SL buffer layers and LT-AlN interlayers, the AlGaN layers are under compressive stress during growth enabling to compensate tensile stress after cooling. To characterize the crystalline quality, HR-XRD measurements were performed. Cross-sectional TEM to investigate dislocation propagation and annihilation. n- and p- conductivities were achieved by Si and Mg doping of the layers, respectively. By C-V and Hall-effect measurements, the maximum free-electron concentration of 2.6{sup +18} cm{sup -3} and free-hole concentration of 2.4{sup +17} cm{sup -3} by using a structure of Mg-doped GaN/Al{sub 0.1}Ga{sub 0.9}N multilayers for the latter were determined. A GaN/Al{sub 0.1}Ga{sub 0.9}N MQW structure showed near UV-luminescence around 350-360 nm. The optical and electrical properties of AlGaN-based LED samples were further characterized by I-V, EL, PL and CL measurements. The I-V measurements show forward-diode characteristics with turn-on voltage about 2.6-3.1 V.

Experimental and computational investigation of graphene/SAMs/n-Si Schottky diodes

Science.gov (United States)

Aydin, H.; Bacaksiz, C.; Yagmurcukardes, N.; Karakaya, C.; Mermer, O.; Can, M.; Senger, R. T.; Sahin, H.; Selamet, Y.

2018-01-01

We have investigated the effect of two different self-assembled monolayers (SAMs) on electrical characteristics of bilayer graphene (BLG)/n-Si Schottky diodes. Novel 4″bis(diphenylamino)-1, 1‧:3″-terphenyl-5‧ carboxylic acids (TPA) and 4,4-di-9H-carbazol-9-yl-1,1‧:3‧1‧-terphenyl-5‧ carboxylic acid (CAR) aromatic SAMs have been used to modify n-Si surfaces. Cyclic voltammetry (CV) and Kelvin probe force microscopy (KPFM) results have been evaluated to verify the modification of n-Si surface. The current-voltage (I-V) characteristics of bare and SAMs modified devices show rectification behaviour verifying a Schottky junction at the interface. The ideality factors (n) from ln(I)-V dependences were determined as 2.13, 1.96 and 2.07 for BLG/n-Si, BLG/TPA/n-Si and BLG/CAR/n-Si Schottky diodes, respectively. In addition, Schottky barrier height (SBH) and series resistance (Rs) of SAMs modified diodes were decreased compared to bare diode due to the formation of a compatible interface between graphene and Si as well as π-π interaction between aromatic SAMs and graphene. The CAR-based device exhibits better diode characteristic compared to the TPA-based device. Computational simulations show that the BLG/CAR system exhibits smaller energy-level-differences than the BLG/TPA, which supports the experimental findings of a lower Schottky barrier and series resistance in BLG/CAR diode.

Thermally stable dexsil-400 glass capillary columns

International Nuclear Information System (INIS)

Maskarinec, M.P.; Olerich, G.

1980-01-01

The factors affecting efficiency, thermal stability, and reproducibility of Dexsil-400 glass capillary columns for gas chromatography in general, and for polycyclic aromatic hydrocarbons (PAHs) in particular were investigated. Columns were drawn from Kimble KG-6 (soda-lime) glass or Kimox (borosilicate) glass. All silylation was carried out at 200 0 C. Columns were coated according to the static method. Freshly prepared, degassed solutions of Dexsil-400 in pentane or methylene chloride were used. Thermal stability of the Dexsil 400 columns with respect to gas chromatography/mass spectrometry (GC/MS) were tested. Column-to-column variability is a function of each step in the fabrication of the columns. The degree of etching, extent of silylation, and stationary phase film thickness must be carefully controlled. The variability in two Dexsil-400 capillary column prepared by etching, silylation with solution of hexa methyl disilazone (HMDS), and static coating is shown and also indicates the excellent selectivity of Dexsil-400 for the separation of alkylated aromatic compounds. The wide temperature range of Dexsil-400 and the high efficiency of the capillary columns also allow the analysis of complex mixtures with minimal prefractionation. Direct injection of a coal liquefaction product is given. Analysis by GC/MS indicated the presence of parent PAHs, alkylated PAHs, nitrogen and sulfur heterocycles, and their alkylated derivatives. 4 figures

Synthesis and characterization of porous crystalline SiC thin films prepared by radio frequency reactive magnetron sputtering technique

Energy Technology Data Exchange (ETDEWEB)

Qamar, Afzaal, E-mail: afzaalqamar@gmail.com [Department of Physics and Applied Mathematics, PIEAS, Nilore, Islamabad, Punjab 42600 (Pakistan); Mahmood, Arshad [National Institute of Laser and Optronics, Nilore, Islamabad (Pakistan); Sarwar, Tuba; Ahmed, Nadeem [Department of Physics and Applied Mathematics, PIEAS, Nilore, Islamabad, Punjab 42600 (Pakistan)

2011-05-15

Hexagonal SiC thin films have been deposited using radio frequency reactive magnetron sputtering technique by varying the substrate temperature and other deposition conditions. Prior to deposition surface modification of the substrate Si(1 0 0) played an important role in deposition of the hexagonal SiC structure. The effect of substrate temperature during deposition on structure, composition and surface morphology of the SiC films has been analyzed using atomic force microscopy, Fourier transform infrared spectroscopy and spectroscopic ellipsometry. X-ray diffraction in conventional {theta}-2{theta} mode and omega scan mode revealed that the deposited films were crystalline having 8H-SiC structure and crystallinity improved with increase of deposition temperature. The bonding order and Si-C composition within the films showed improvement with the increase of deposition temperature. The surface of thin films grew in the shape of globes and columns depending upon deposition temperature. The optical properties also showed improvement with increase of deposition temperature and the results obtained by ellipsometry reinforced the results of other techniques.

Safety barriers and lighting columns.

NARCIS (Netherlands)

Schreuder, D.A.

1972-01-01

Problems arising from the sitting of lighting columns on the central reserve are reviewed, and remedial measures such as break-away lighting supports and installation of safety fences on the central reserve on both sides of the lighting columns are examined.

Study of Si/Si, Si/SiO2, and metal-oxide-semiconductor (MOS) using positrons

International Nuclear Information System (INIS)

Leung, To Chi.

1991-01-01

A variable-energy positron beam is used to study Si/Si, Si/SiO 2 , and metal-oxide-semiconductor (MOS) structures. The capability of depth resolution and the remarkable sensitivity to defects have made the positron annihilation technique a unique tool in detecting open-volume defects in the newly innovated low temperature (300C) molecular-beam-epitaxy (MBE) Si/Si. These two features of the positron beam have further shown its potential role in the study of the Si/SiO 2 . Distinct annihilation characteristics has been observed at the interface and has been studied as a function of the sample growth conditions, annealing (in vacuum), and hydrogen exposure. The MOS structure provides an effective way to study the electrical properties of the Si/SiO 2 interface as a function of applied bias voltage. The annihilation characteristics show a large change as the device condition is changed from accumulation to inversion. The effect of forming gas (FG) anneal is studied using positron annihilation and the result is compared with capacitance-voltage (C-V) measurements. The reduction in the number of interface states is found correlated with the changes in the positron spectra. The present study shows the importance of the positron annihilation technique as a non-contact, non-destructive, and depth-sensitive characterization tool to study the Si-related systems, in particular, the Si/SiO 2 interface which is of crucial importance in semiconductor technology, and fundamental understanding of the defects responsible for degradation of the electrical properties

Temperature-assisted On-column Solute Focusing: A General Method to Reduce Pre-column Dispersion in Capillary High Performance Liquid Chromatography

Science.gov (United States)

Groskreutz, Stephen R.; Weber, Stephen G.

2014-01-01

Solvent-based on-column focusing is a powerful and well known approach for reducingthe impact of pre-column dispersion in liquid chromatography. Here we describe an orthogonal temperature-based approach to focusing called temperature-assisted on-column solute focusing (TASF). TASF is founded on the same principles as the more commonly used solvent-based method wherein transient conditions are created thatlead to high solute retention at the column inlet. Combining the low thermal mass of capillary columns and the temperature dependence of solute retentionTASF is used effectivelyto compress injection bands at the head of the column through the transient reduction in column temperature to 5 °C for a defined 7 mm segment of a 6 cm long 150 μm I.D. column. Following the 30 second focusing time, the column temperature is increased rapidly to the separation temperature of 60 °C releasing the focused band of analytes. We developed a model tosimulate TASF separations based on solute retention enthalpies, focusing temperature, focusing time, and column parameters. This model guides the systematic study of the influence of sample injection volume on column performance.All samples have solvent compositions matching the mobile phase. Over the 45 to 1050 nL injection volume range evaluated, TASF reducesthe peak width for all soluteswith k’ greater than or equal to 2.5, relative to controls. Peak widths resulting from injection volumes up to 1.3 times the column fluid volume with TASF are less than 5% larger than peak widths from a 45 nL injection without TASF (0.07 times the column liquid volume). The TASF approach reduced concentration detection limits by a factor of 12.5 relative to a small volume injection for low concentration samples. TASF is orthogonal to the solvent focusing method. Thus, it canbe used where on-column focusing is required, but where implementation of solvent-based focusing is difficult. PMID:24973805

Heat Transfer Analysis for a Fixed CST Column

International Nuclear Information System (INIS)

Lee, S.Y.

2004-01-01

In support of a small column ion exchange (SCIX) process for the Savannah River Site waste processing program, a transient two-dimensional heat transfer model that includes the conduction process neglecting the convection cooling mechanism inside the crystalline silicotitanate (CST) column has been constructed and heat transfer calculations made for the present design configurations. For this situation, a no process flow condition through the column was assumed as one of the reference conditions for the simulation of a loss-of-flow accident. A series of the modeling calculations has been performed using a computational heat transfer approach. Results for the baseline model indicate that transit times to reach 130 degrees Celsius maximum temperature of the CST-salt solution column are about 96 hours when the 20-in CST column with 300 Ci/liter heat generation source and 25 degrees Celsius initial column temperature is cooled by natural convection of external air as a primary heat transfer mechanism. The modeling results for the 28-in column equipped with water jacket systems on the external wall surface of the column and water coolant pipe at the center of the CST column demonstrate that the column loaded with 300 Ci/liter heat source can be maintained non-boiling indefinitely. Sensitivity calculations for several alternate column sizes, heat loads of the packed column, engineered cooling systems, and various ambient conditions at the exterior wall of the column have been performed under the reference conditions of the CST-salt solution to assess the impact of those parameters on the peak temperatures of the packed column for a given transient time. The results indicate that a water-coolant pipe at the center of the CST column filled with salt solution is the most effective one among the potential design parameters related to the thermal energy dissipation of decay heat load. It is noted that the cooling mechanism at the wall boundary of the column has significant

NON-LINEAR ANALYSIS OF AN EXPERIMENTAL JOINT OF COLUMN AND BEAMS OF ARMED CONCRETE-STEEL COLUMN FOR FRAME

Directory of Open Access Journals (Sweden)

Nelson López

2017-12-01

Full Text Available In this research, the nonlinear behavior of a real-scale experimental joint (node is studied, consisting of three reinforced concrete elements, one column and two beams joined to a structural steel column at the upper level. In the numerical analysis the model of the union was analyzed in the inelastic range, this model was elaborated with the finite element program based on fibers, SeismoStruct to analyze as a function of time, the traction and compression efforts in the confined area and not confined area of the concrete column and in the longitudinal reinforcement steel, as well as verification of the design of the base plate that joins the two columns. The results showed that tensile stresses in the unconfined zone surpassed the concrete breaking point, with cracking occurring just below the lower edge of the beams; in the confined area the traction efforts were much lower, with cracks occurring later than in the non-confined area. The concrete column-steel column joint behaved as a rigid node, so the elastic design was consistent with the calculation methodology of base plates for steel columns.

Fabrication of a micrometer Ni–Cu alloy column coupled with a Cu micro-column for thermal measurement

International Nuclear Information System (INIS)

Lin, J C; Chang, T K; Yang, J H; Jeng, J H; Lee, D L; Jiang, S B

2009-01-01

Micrometer Ni–Cu alloy columns have been fabricated by the micro-anode-guided electroplating (MAGE) process in the citrate bath. The surface morphology and chemical composition of the micro-columns were determined by copper concentration in the bath and by the electrical bias of MAGE. When fabricated in a bath of dilute copper (i.e. 4 mM) at lower voltages (e.g. 3.8 and 4.0 V), the alloy micro-columns revealed uniform diameter and smooth appearance. The alloy composition demonstrated an increase in the wt% ratio of Ni/Cu from 75/25, 80/20, 83/17 to 87/13 with increasing electrical bias from 3.8, 4.0, 4.2 to 4.4 V. However, it decreases from 75/25, 57/43 to 47/53 with increasing copper concentration from 4, 8 to 12 mM in the bath. Citrate plays a role in forming complexes with nickel and copper at similar reduction potentials, thus reducing simultaneously to Ni–Cu alloy. The mechanism for fabricating alloy micro-columns could be delineated on the basis of cathodic polarization of the complexes. A couple of micro-columns were fabricated using MAGE in constructing a pure copper micro-column on the top of a Ni/Cu (at 47/53) alloy micro-column. This micro-thermocouple provides a satisfactory measurement with good sensitivity and precision

Photoluminescence of Er-doped Si-SiO2 and Al-Si-SiO2 sputtered thin films

International Nuclear Information System (INIS)

Rozo, C.; Fonseca, L.F.; Jaque, D.; Sole, J.Garcia

2008-01-01

Er-doped Si-SiO 2 and Al-Si-SiO 2 films have been deposited by rf-sputtering being annealed afterwards. Annealing behavior of the Er 3+ : 4 I 13/2 → 4 I 15/2 emission of Er-doped Si-SiO 2 yields a maximum intensity for annealing at 700-800 deg. C. 4 I 13/2 → 4 I 15/2 peak emission for Er-doped Al-Si-SiO 2 at 1525 nm is shifted from that for Er-doped Si-SiO 2 at 1530 nm and the bandwidth increases from 29 to 42 nm. 4 I 13/2 → 4 I 15/2 emission decays present a fast decaying component related to Er ions coupled to Si nanoparticles, defects, or other ions, and a slow decaying component related to isolated Er ions. Excitation wavelength dependence and excitation power dependence for the 4 I 13/2 → 4 I 15/2 emission correspond with energy transfer from Si nanoparticles. Populating of the 4 I 11/2 level in Er-doped Si-SiO 2 involves branching and energy transfer upconversion involving two or more Er ions. Addition of Al reduces the populating of this level to an energy transfer upconversion involving two ions

Lithium alkyl anions of uranium(IV) and uranium(V)

International Nuclear Information System (INIS)

Sigurdson, E.R.; Wilkinson, G.

1977-01-01

Organouranium compounds with six or eight uranium-to-carbon sigma-bonds have been synthesized for the first time. The interaction of uranium tetrachloride with lithium alkyls in diethyl ether leads to the isolation of unstable lithium alkyluranate(IV) compounds of stoicheiometry Li 2 UR 6 .8Et 2 0 (R = Me, CH 2 SiMe 3 . Ph, and o-Me 2 NCH 2 C 6 H 4 ). These lithium salts can also be obtained with other donor solvents, such as tetrahydrofuran or NNN'N'-tetramethylethylenediamine. From uranium pentaethoxide similar lithium salts of stoicheiometry Li 3 UR 8 .3 dioxan (R = Me, CH 2 CMe 3 , and CH 2 SiMe 3 ) can be obtained. The interaction of uranium(VI) hexaisopropoxide with lithium, magnesium, or aluminium alkyls does not give compounds containing U-C bonds, but green oils, e.g. U(OPrsup(i)) 6 (MgMe 2 ) 3 , that appear to be adducts in which the oxygen atom of the isopropoxide group bound to uranium is acting as a donor. I.r. and n.m.r. spectroscopy and analytical data for the new compounds are presented. (author)

Behavior of reinforced concrete columns strenghtened by partial jacketing

Directory of Open Access Journals (Sweden)

D. B. FERREIRA

Full Text Available This article presents the study of reinforced concrete columns strengthened using a partial jacket consisting of a 35mm self-compacting concrete layer added to its most compressed face and tested in combined compression and uniaxial bending until rupture. Wedge bolt connectors were used to increase bond at the interface between the two concrete layers of different ages. Seven 2000 mm long columns were tested. Two columns were cast monolithically and named PO (original column e PR (reference column. The other five columns were strengthened using a new 35 mm thick self-compacting concrete layer attached to the column face subjected to highest compressive stresses. Column PO had a 120mm by 250 mm rectangular cross section and other columns had a 155 mm by 250mm cross section after the strengthening procedure. Results show that the ultimate resistance of the strengthened columns was more than three times the ultimate resistance of the original column PO, indicating the effectiveness of the strengthening procedure. Detachment of the new concrete layer with concrete crushing and steel yielding occurred in the strengthened columns.

Electrical Investigation of Nanostructured Fe2O3/p-Si Heterojunction Diode Fabricated Using the Sol-Gel Technique

Science.gov (United States)

Mansour, Shehab A.; Ibrahim, Mervat M.

2017-11-01

Iron oxide (α-Fe2O3) nanocrystals have been synthesized via the sol-gel technique. The structural and morphological features of these nanocrystals were studied using x-ray diffraction, Fourier transform-infrared spectroscopy and transmission electron microscopy. Colloidal solution of synthesized α-Fe2O3 (hematite) was spin-coated onto a single-crystal p-type silicon (p-Si) wafer to fabricate a heterojunction diode with Mansourconfiguration Ag/Fe2O3/p-Si/Al. This diode was electrically characterized at room temperature using current-voltage (I-V) characteristics in the voltage range from -9 V to +9 V. The fabricated diode showed a good rectification behavior with a rectification factor 1.115 × 102 at 6 V. The junction parameters such as ideality factor, barrier height, series resistance and shunt resistance are determined using conventional I-V characteristics. For low forward voltage, the conduction mechanism is dominated by the defect-assisted tunneling process with conventional electron-hole recombination. However, at higher voltage, I-V ohmic and space charge-limited current conduction was became less effective with the contribution of the trapped-charge-limited current at the highest voltage range.

Recent advances in column switching sample preparation in bioanalysis.

Science.gov (United States)

Kataoka, Hiroyuki; Saito, Keita

2012-04-01

Column switching techniques, using two or more stationary phase columns, are useful for trace enrichment and online automated sample preparation. Target fractions from the first column are transferred online to a second column with different properties for further separation. Column switching techniques can be used to determine the analytes in a complex matrix by direct sample injection or by simple sample treatment. Online column switching sample preparation is usually performed in combination with HPLC or capillary electrophoresis. SPE or turbulent flow chromatography using a cartridge column and in-tube solid-phase microextraction using a capillary column have been developed for convenient column switching sample preparation. Furthermore, various micro-/nano-sample preparation devices using new polymer-coating materials have been developed to improve extraction efficiency. This review describes current developments and future trends in novel column switching sample preparation in bioanalysis, focusing on innovative column switching techniques using new extraction devices and materials.

Heterojunction between the delafossite TCO n-copper indium oxide and p-Si for solar cell applications

Energy Technology Data Exchange (ETDEWEB)

Keerthi, K.; Nair, B. G.; Philip, R. R., E-mail: reenatara@rediffmail.com [Thin film research lab, Union Christian College, Aluva, Cochin, Kerala (India); Masuzawa, T.; Saito, I.; Okano, K. [Department Of Material Science, International Christian University (Japan); Johns, N. [Indian Institute of Technology, Bombay (India)

2016-05-23

Junction formation of n-copper indium oxide (CIO) (extrinsically undoped) with p-Si leading to conversion of photons in the UV-Vis range is being reported for the first time. I-V and temporal photoconductivity data confirm positively the carrier generation in CIO under irradiation while optical absorbance data furnish its band gap to be ~ 3.1 eV. Ultraviolet photoelectron spectroscopy is used to study the electronic band structure of CIO on Si and to construct a schematic diagram of the hetero-junction to explain the observed photovoltaic phenomena.

Chromatographic properties PLOT multicapillary columns.

Science.gov (United States)

Nikolaeva, O A; Patrushev, Y V; Sidelnikov, V N

2017-03-10

Multicapillary columns (MCCs) for gas chromatography make it possible to perform high-speed analysis of the mixtures of gaseous and volatile substances at a relatively large amount of the loaded sample. The study was performed using PLOT MCCs for gas-solid chromatography (GSC) with different stationary phases (SP) based on alumina, silica and poly-(1-trimethylsilyl-1-propyne) (PTMSP) polymer as well as porous polymers divinylbenzene-styrene (DVB-St), divinylbenzene-vinylimidazole (DVB-VIm) and divinylbenzene-ethylene glycol dimethacrylate (DVB-EGD). These MCCs have the efficiency of 4000-10000 theoretical plates per meter (TP/m) and at a column length of 25-30cm can separate within 10-20s multicomponent mixtures of substances belonging to different classes of chemical compounds. The sample amount not overloading the column is 0.03-1μg and depends on the features of a porous layer. Examples of separations on some of the studied columns are considered. Copyright © 2017 Elsevier B.V. All rights reserved.

Critical appraisal of Rome IV criteria: hypersensitive esophagus does belong to gastroesophageal reflux disease spectrum

Science.gov (United States)

Frazzoni, Leonardo; Frazzoni, Marzio; de Bortoli, Nicola; Tolone, Salvatore; Martinucci, Irene; Fuccio, Lorenzo; Savarino, Vincenzo; Savarino, Edoardo

2018-01-01

The Rome IV Committee introduced a major change in the classification of functional gastrointestinal disorders, proposing a more restrictive definition of gastroesophageal reflux disease (GERD). It was suggested that hypersensitive esophagus (HE) may sit more firmly within the functional realm. It was suggested that GERD diagnosis should be based upon abnormal acid exposure time (AET) only, implying no advantage of impedance-pH over pH monitoring. Symptom association probability (SAP), symptom index (SI) and heartburn relief with proton pump inhibitor (PPI) therapy were regarded as unreliable, whereas a lack of response to PPI was considered as evidence of functional heartburn. These assumptions are contradicted by numerous studies showing the clinical relevance of weakly acidic refluxes and the diagnostic utility of SAP, SI and new impedance parameters, namely the post-reflux swallow-induced peristaltic wave (PSPW) index and the mean nocturnal baseline impedance (MNBI). The PSPW index and MNBI provide significant diagnostic advantage, particularly in patients with normal AET who can be classified as HE when both parameters are abnormal, even though SAP and SI are negative. Visceral pain modulators are recommended by the Rome IV Committee despite scanty evidence of efficacy, but a positive outcome with medical or surgical anti-reflux treatment has been reported by several studies of HE patients. Therefore, we believe that patients with endoscopy-negative heartburn should be investigated by means of impedance-pH monitoring with analysis of PSPW index and MNBI: such an approach provides accurate identification of HE cases, who remain, in our opinion, within the realm of GERD and should be treated accordingly. PMID:29333061

Oxochloroalkoxide of the Cerium (IV and Titanium (IV as oxides precursor

Directory of Open Access Journals (Sweden)

Machado Luiz Carlos

2002-01-01

Full Text Available The Cerium (IV and Titanium (IV oxides mixture (CeO2-3TiO2 was prepared by thermal treatment of the oxochloroisopropoxide of Cerium (IV and Titanium (IV. The chemical route utilizing the Cerium (III chloride alcoholic complex and Titanium (IV isopropoxide is presented. The compound Ce5Ti15Cl16O30 (iOPr4(OH-Et15 was characterized by elemental analysis, FTIR and TG/DTG. The X-ray diffraction patterns of the oxides resulting from the thermal decomposition of the precursor at 1000 degreesC for 36 h indicated the formation of cubic cerianite (a = 5.417Å and tetragonal rutile (a = 4.592Å and (c = 2.962 Å, with apparent crystallite sizes around 38 and 55nm, respectively.

Allergenic fragments of ryegrass (Lolium perenne) pollen allergen Lol p IV.

Science.gov (United States)

Jaggi, K S; Ekramoddoullah, A K; Kisil, F T

1989-01-01

To facilitate studies on establishing the nature of structure/function relationships of allergens, ryegrass pollen allergen, Lol p IV, was cleaved into smaller fragments by cyanogen bromide (CNBr) and the resulting peptides were further digested with trypsin. The resulting peptides were then fractionated by high performance liquid chromatography (HPLC) on a C-18 reverse phase column. The allergenic activity of the HPLC fractions was evaluated in terms of their ability to inhibit the binding of 125I-Lol p IV to serum IgE antibodies of a grass-allergic patient. Many of these fractions inhibited the binding between the native allergen and IgE antibodies in a dose-dependent manner. The inhibitions were specific, i.e., the fractions did not inhibit the binding between 125I-Lol p I (a group-I ryegrass pollen allergen) and the IgE antibodies present in the allergic human serum. The possibility that the allergenic peptide fractions were contaminated by the native undegraded allergen, which might have accounted for the observed inhibition, was ruled out by the fact that the native allergen could not be detected by SDS-PAGE and the elution profiles of allergenically active peptides did not coincide with that of native allergen. One of the allergenic sites recognized by monoclonal antibody (Mab) 90, i.e., site A, was located in HPLC fractions 90-100 while another allergenic site B (recognized by Mab 12) appeared to be lost following the sequential digestion of Lol p IV with CNBr and trypsin.

Experimental study of structural and optical properties of integrated MOCVD GaAs/Si(001) heterostructures

Science.gov (United States)

Seredin, P. V.; Lenshin, A. S.; Zolotukhin, D. S.; Arsentyev, I. N.; Nikolaev, D. N.; Zhabotinskiy, A. V.

2018-02-01

This is the first report of the control of the structural and optical functional characteristics of integrated GaAs/Si(001) heterostructures due to the use of misoriented Si(001) substrates with protoporous sublayer. The growth of the epitaxial GaAs layer on silicon substrates without formation of the antiphase domains can be performed on substrates deviating less than 4°-6° from the singular (001) plane or without the use of a transition layer of GaAs nano-columns. Preliminary etching of the silicon substrate with protoporous Si sublayer formation facilitated the acquisition of an epitaxial GaAs film in a single-crystalline state with a considerably less residual strain factor using MOCVD, which has a positive effect on the structural quality of the film. These data are in a good agreement with the results of IR reflection spectroscopy as well as PL and UV spectroscopy. The optical properties of the integrated GaAs/Si (001) heterostructures in the IR and UV spectral regions were also determined by the residual strain value.

Studies on the liquid-liquid phase distribution equilibria of selenium and its measurement in water using extraction plant with a pulsation column

International Nuclear Information System (INIS)

Iskanderani, F.; Sobhi, K.M.; Ejaz, M.

1989-01-01

Normal heptane, xylene and a 0.01 molar solution of 4-(5-nonyl)pyridine in toluene were investigated as extractants for selenium(IV) from nitric acid media in potassium iodide. Various parameters affecting the distribution of the element are investigated. Extraction at high aqueous to organic phase volume ratio was studied, using a liquid-liquid extraction plant with a pulsation column. The results were employed to measure selenium in spiked water samples. (author) 24 refs.; 8 figs

Technetium removal column flow testing with alkaline, high salt, radioactive tank waste

International Nuclear Information System (INIS)

Blanchard, D.L. Jr.; Kurath, D.E.; Golcar, G.R.; Conradson, S.D.

1996-01-01

This report describes two bench-scale column tests conducted to demonstrate the removal of Tc-99 from actual alkaline high salt radioactive waste. The waste used as feed for these tests was obtained from the Hanford double shell tank AW-101, which contains double shell slurry feed (DSSF). The tank sample was diluted to approximately 5 M Na with water, and most of the Cs-137 was removed using crystalline silicotitanates. The tests were conducted with two small columns connected in series, containing, 10 mL of either a sorbent, ABEC 5000 (Eichrom Industries, Inc.), or an anion exchanger Reillex trademark-HPQ (Reilly Industries, Inc.). Both materials are selective for pertechnetate anion (TcO 4 - ). The process steps generally followed those expected in a full-scale process and included (1) resin conditioning, (2) loading, (3) caustic wash to remove residual feed and prevent the precipitation of Al(OH) 3 , and (4) elution. A small amount of Tc-99m tracer was added as ammonium pertechnetate to the feed and a portable GEA counter was used to closely monitor the process. Analyses of the Tc-99 in the waste was performed using ICP-MS with spot checks using radiochemical analysis. Technetium x-ray absorption spectroscopy (XAS) spectra of 6 samples were also collected to determine the prevalence of non-pertechnetate species [e.g. Tc(IV)

PRTR ion exchange vault column sampling

International Nuclear Information System (INIS)

Cornwell, B.C.

1995-01-01

This report documents ion exchange column sampling and Non Destructive Assay (NDA) results from activities in 1994, for the Plutonium Recycle Test Reactor (PRTR) ion exchange vault. The objective was to obtain sufficient information to prepare disposal documentation for the ion exchange columns found in the PRTR Ion exchange vault. This activity also allowed for the monitoring of the liquid level in the lower vault. The sampling activity contained five separate activities: (1) Sampling an ion exchange column and analyzing the ion exchange media for purpose of waste disposal; (2) Gamma and neutron NDA testing on ion exchange columns located in the upper vault; (3) Lower vault liquid level measurement; (4) Radiological survey of the upper vault; and (5) Secure the vault pending waste disposal

Towards flexible asymmetric MSM structures using Si microwires through contact printing

Science.gov (United States)

Khan, S.; Lorenzelli, L.; Dahiya, R.

2017-08-01

This paper presents development of flexible metal-semiconductor-metal devices using silicon (Si) microwires. Monocrystalline Si in the shape of microwires are used which are developed through standard photolithography and etching. These microwires are assembled on secondary flexible substrates through a dry transfer printing by using a polydimethylsiloxane stamp. The conductive patterns on Si microwires are printed using a colloidal silver nanoparticles based solution and an organic conductor i.e. poly (3,4-ethylene dioxthiophene) doped with poly (styrene sulfonate). A custom developed spray coating technique is used for conductive patterns on Si microwires. A comparative study of the current-voltage (I-V) responses is carried out in flat and bent orientations as well as the response to the light illumination of the wires is explored. Current variations as high as 17.1 μA are recorded going from flat to bend conditions, while the highest I on/I off ratio i.e. 43.8 is achieved with light illuminations. The abrupt changes in the current response due to light-on/off conditions validates these devices for fast flexible photodetector switches. These devices are also evaluated based on transfer procedure i.e. flip-over and stamp-assisted transfer printing for manipulating Si microwires and their subsequent post-processing. These new developments were made to study the most feasible approach for transfer printing of Si microwires and to harvest their capabilities such as photodetection and several other applications in the shape of metal-semiconductor-metal structures.

A dominant mutation in mediator of paramutation2, one of three second-largest subunits of a plant-specific RNA polymerase, disrupts multiple siRNA silencing processes.

Science.gov (United States)

Sidorenko, Lyudmila; Dorweiler, Jane E; Cigan, A Mark; Arteaga-Vazquez, Mario; Vyas, Meenal; Kermicle, Jerry; Jurcin, Diane; Brzeski, Jan; Cai, Yu; Chandler, Vicki L

2009-11-01

Paramutation involves homologous sequence communication that leads to meiotically heritable transcriptional silencing. We demonstrate that mop2 (mediator of paramutation2), which alters paramutation at multiple loci, encodes a gene similar to Arabidopsis NRPD2/E2, the second-largest subunit of plant-specific RNA polymerases IV and V. In Arabidopsis, Pol-IV and Pol-V play major roles in RNA-mediated silencing and a single second-largest subunit is shared between Pol-IV and Pol-V. Maize encodes three second-largest subunit genes: all three genes potentially encode full length proteins with highly conserved polymerase domains, and each are expressed in multiple overlapping tissues. The isolation of a recessive paramutation mutation in mop2 from a forward genetic screen suggests limited or no functional redundancy of these three genes. Potential alternative Pol-IV/Pol-V-like complexes could provide maize with a greater diversification of RNA-mediated transcriptional silencing machinery relative to Arabidopsis. Mop2-1 disrupts paramutation at multiple loci when heterozygous, whereas previously silenced alleles are only up-regulated when Mop2-1 is homozygous. The dramatic reduction in b1 tandem repeat siRNAs, but no disruption of silencing in Mop2-1 heterozygotes, suggests the major role for tandem repeat siRNAs is not to maintain silencing. Instead, we hypothesize the tandem repeat siRNAs mediate the establishment of the heritable silent state-a process fully disrupted in Mop2-1 heterozygotes. The dominant Mop2-1 mutation, which has a single nucleotide change in a domain highly conserved among all polymerases (E. coli to eukaryotes), disrupts both siRNA biogenesis (Pol-IV-like) and potentially processes downstream (Pol-V-like). These results suggest either the wild-type protein is a subunit in both complexes or the dominant mutant protein disrupts both complexes. Dominant mutations in the same domain in E. coli RNA polymerase suggest a model for Mop2-1 dominance

Electronic states at Si-SiO2 interface introduced by implantation of Si in thermal SiO2

International Nuclear Information System (INIS)

Kalnitsky, A.; Poindexter, E.H.; Caplan, P.J.

1990-01-01

Interface traps due to excess Si introduced into the Si-SiO 2 system by ion implantation are investigated. Implanted oxides are shown to have interface traps at or slightly above the Si conduction band edge with densities proportional to the density of off-stoichiometric Si at the Si-SiO 2 interface. Diluted oxygen annealing is shown to result in physical separation of interface traps and equilibrium substrate electrons, demonstrating that ''interface'' states are located within a 0.5 nm thick layer of SiO 2 . Possible charge trapping mechanisms are discussed and the effect of these traps on MOS transistor characteristics is described using a sheet charge model. (author)

Laser surface wakefield in a plasma column

International Nuclear Information System (INIS)

Gorbunov, L.M.; Mora, P.; Ramazashvili, R.R.

2003-01-01

The structure of the wakefield in a plasma column, produced by a short intense laser pulse, propagating through a gas affected by tunneling ionization is investigated. It is shown that besides the usual plasma waves in the bulk part of the plasma column [see Andreev et al., Phys. Plasmas 9, 3999 (2002)], the laser pulse also generates electromagnetic surface waves propagating along the column boundary. The length of the surface wake wave substantially exceeds the length of the plasma wake wave and its electromagnetic field extends far outside the plasma column

Field Applications of Gamma Column Scanning Technology

International Nuclear Information System (INIS)

Aquino, Denis D.; Mallilin, Janice P.; Nuñez, Ivy Angelica A.; Bulos, Adelina DM.

2015-01-01

The Isotope Techniques Section (ITS) under the Nuclear Service Division (NSD) of the Philippine Nuclear Research Institute (PNRI) conducts services, research and development on radioisotope and sealed source application in the industry. This aims to benefit the manufacturing industries such as petroleum, petrochemical, chemical, energy, waste, column treatment plant, etc. through on line inspection and troubleshooting of a process vessel, column or pipe that could optimize the process operation and increase production efficiency. One of the most common sealed source techniques for industrial applications is the gamma column scanning technology. Gamma column scanning technology is an established technique for inspection, analysis and diagnosis of industrial columns for process optimization, solving operational malfunctions and management of resources. It is a convenient non-intrusive, cost effective and cost-efficient technique to examine inner details of an industrial process vessel such as a distillation column while it is in operation. The Philippine Nuclear Research Institute (PNRI) recognize the importance and benefits of this technology and has implemented activities to make gamma column scanning locally available to benefit the Philippine industries. Continuous effort for capacity building is being pursued thru the implementation of in-house and on-the-job training abroad and upgrading of equipment. (author)

Si-Based Germanium Tin Semiconductor Lasers for Optoelectronic Applications

Science.gov (United States)

Al-Kabi, Sattar H. Sweilim

Silicon-based materials and optoelectronic devices are of great interest as they could be monolithically integrated in the current Si complementary metal-oxide-semiconductor (CMOS) processes. The integration of optoelectronic components on the CMOS platform has long been limited due to the unavailability of Si-based laser sources. A Si-based monolithic laser is highly desirable for full integration of Si photonics chip. In this work, Si-based germanium-tin (GeSn) lasers have been demonstrated as direct bandgap group-IV laser sources. This opens a completely new avenue from the traditional III-V integration approach. In this work, the material and optical properties of GeSn alloys were comprehensively studied. The GeSn films were grown on Ge-buffered Si substrates in a reduced pressure chemical vapor deposition system with low-cost SnCl4 and GeH4 precursors. A systematic study was done for thin GeSn films (thickness 400 nm) with Sn composition 5 to 17.5%. The room temperature photoluminescence (PL) spectra were measured that showed a gradual shift of emission peaks towards longer wavelength as Sn composition increases. Strong PL intensity and low defect density indicated high material quality. Moreover, the PL study of n-doped samples showed bandgap narrowing compared to the unintentionally p-doped (boron) thin films with similar Sn compositions. Finally, optically pumped GeSn lasers on Si with broad wavelength coverage from 2 to 3 mum were demonstrated using high-quality GeSn films with Sn compositions up to 17.5%. The achieved maximum Sn composition of 17.5% broke the acknowledged Sn incorporation limit using similar deposition chemistry. The highest lasing temperature was measured at 180 K with an active layer thickness as thin as 270 nm. The unprecedented lasing performance is due to the achievement of high material quality and a robust fabrication process. The results reported in this work show a major advancement towards Si-based electrically pumped mid

Observation and Measurement of Negative Differential Resistance on PtSi Schottky Junctions on Porous Silicon

Directory of Open Access Journals (Sweden)

Mansor Mohtashamifar

2010-01-01

Full Text Available Nanosize porous Si is made by two step controlled etching of Si. The first etching step is carried on the Si surface and the second is performed after deposition of 75 Å of platinum on the formed surface. A platinum silicide structure with a size of less than 25 nm is formed on the porous Si surface, as measured with an Atomic Forced Microscope (AFM. Differential resistance curve as a function of voltage in 77 K and 100 K shows a negative differential resistance and indicates the effect of quantum tunneling. In general form, the ratio of maximum to minimum tunneling current (PVR and the number of peaks in I-V curves reduces by increasing the temperature. However, due to accumulation of carriers behind the potential barrier and superposition of several peaks, it is observed that the PVR increases at 100 K and the maximum PVR at 100 K is 189.6.

Photospheric, circumstellar, and interstellar features of HE, C, N. O, and Si in the HST spectra of four hot white dwarf stars

Science.gov (United States)

Shipman, Harry L.; Provencal, Judi; Roby, Scott W.; Barstow, Martin; Bond, Howard; Bruhweiler, Fred; Finley, David; Fontaine, Gilles; Holberg, Jay; Nousek, John

1995-01-01

This paper reports on the observations of four hot white dwarf stars with the spectrographs on the Hubble Space Telescope (HST). The higher resolving power and higher signal/noise, in comparison with IUE, reveals a very rich phenomomenology, including photospheric features from heavy elements, circumstellar features, and the first direct detection of accretion onto the white dwarf component of a binary system. Specific results include the following: Our observations of the ultrahot degenerate H1504+65 confirm that it has a photosphere which is depleted in both H and He, and reveals features of C IV and O VI. The spectrum fits previously published models extremely well. The intermediate-temperature DO star PG 1034+001 has an ultraviolet spectrum showing complex profiles of the well-known resonance doublets of C IV, N v, and Si IV. The O V 1371 line shows a clear separation into a photospheric and a circumstellar component, and it is likely that the same two components can explain the other lines as well. The cooler DA star GD 394 has an extensive system of heavy-element features, but their radial velocity is such that it is highly unlikely that they are formed in the stellar photosphere. Time-resolved spectra of the accreting white dwarf in the V 471 Tau binary system are briefly presented here; they do show the presence of C IV, Si IV, and He II. However, the C IV and He II lines are in emission, rather than in aborption as had been expected.

Transuranium perrhenates: Np(IV), Pu(IV) and (III), Am (III)

International Nuclear Information System (INIS)

Silvestre, Jean-Paul; Freundlich, William; Pages, Monique

1977-01-01

Synthesis in aqueous solution and by solid state reactions, crystallographical characterization and study of the stability of some transuranium perrhenates: Asup(n+)(ReO 4 - )sub(n) (A=Np(IV), Pu(IV), Pu(III), Am(III) [fr

Compositional dependence of the band-gap of Ge{sub 1−x−y}Si{sub x}Sn{sub y} alloys

Energy Technology Data Exchange (ETDEWEB)

Wendav, Torsten, E-mail: wendav@physik.hu-berlin.de [AG Theoretische Optik & Photonik, Humboldt Universität zu Berlin, Newtonstr. 15, 12489 Berlin (Germany); Fischer, Inga A.; Oehme, Michael; Schulze, Jörg [Institut für Halbleitertechnik, Universität Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart (Germany); Montanari, Michele; Zoellner, Marvin Hartwig; Klesse, Wolfgang [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Capellini, Giovanni [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Dipartimento di Scienze, Università Roma Tre, Viale Marconi 446, 00146 Roma (Italy); Driesch, Nils von den; Buca, Dan [Peter Grünberg Institute 9 (PGI 9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Jülich, 52428 Jülich (Germany); Busch, Kurt [AG Theoretische Optik & Photonik, Humboldt Universität zu Berlin, Newtonstr. 15, 12489 Berlin (Germany); Max-Born-Institut, Max-Born-Str. 2 A, 12489 Berlin (Germany)

2016-06-13

The group-IV semiconductor alloy Ge{sub 1−x−y}Si{sub x}Sn{sub y} has recently attracted great interest due to its prospective potential for use in optoelectronics, electronics, and photovoltaics. Here, we investigate molecular beam epitaxy grown Ge{sub 1−x−y}Si{sub x}Sn{sub y} alloys lattice-matched to Ge with large Si and Sn concentrations of up to 42% and 10%, respectively. The samples were characterized in detail by Rutherford backscattering/channeling spectroscopy for composition and crystal quality, x-ray diffraction for strain determination, and photoluminescence spectroscopy for the assessment of band-gap energies. Moreover, the experimentally extracted material parameters were used to determine the SiSn bowing and to make predictions about the optical transition energy.

Picobubble enhanced column flotation of fine coal

Energy Technology Data Exchange (ETDEWEB)

Tao, D.; Yu, S.; Parekh, B.K. [University of Kentucky, Lexington, KY (United States). Mining Engineering

2006-07-01

The purpose is to study the effectiveness of picobubbles in the column flotation of -28 mesh fine coal particles. A flotation column with a picobubble generator was developed and tested for enhancing the recovery of ultrafine coal particles. The picobubble generator was designed using the hydrodynamic cavitation principle. A metallurgical and a steam coal were tested in the apparatus. The results show that the use of picobubbles in a 2in. flotation column increased the recovery of fine coal by 10 to 30%. The recovery rate varied with feed rate, collector dosage, and other column conditions. 40 refs., 8 figs., 2 tabs.

I-V Characteristics of PtxCo1−x (x = 0.2, 0.5, and 0.7 Thin Films

Directory of Open Access Journals (Sweden)

M. Erkovan

2013-01-01

Full Text Available Three different chemical ratios of PtxCo1−x thin films were grown on p-type native oxide Si (100 by Magneto Sputtering System with cosputtering technique at 350°C temperature to investigate electrical prosperities. X-ray photoelectron spectroscopy analysis technique was used to specify chemical ratios of these films. The current-voltage (I-V measurements of metal-semiconductor (MS Schottky diodes were carried out at room temperature. From the I-V analysis of the samples, ideality factor (n, barrier height (ϕ, and contact resistance values were determined by using thermionic emission (TE theory. Some important parameters such as barrier height, ideality factor, and serial resistance were calculated from the I-V characteristics based on thermionic emission mechanism. The ideality factors of the samples were not much greater than unity, and the serial resistances of the samples were also very low.

Thermal characterization of tubular SiC/SiC composite structures for nuclear applications

International Nuclear Information System (INIS)

Duquesne, Loys

2015-01-01

Researches on the development on SiCf/SiC refractory composites for generation IV nuclear fuel cladding led the CEA to focus on the thermal behavior of these materials. In particular, knowledge of the thermal properties is essential for designing the components. Regarding the development of the 'sandwich' cladding concept, for which the complexity and the geometry differ from the conventionally used flat tubes, usual measurement methods are unsuitable. This study reports on the characterization and modeling of the thermal behavior of these structures. The first part deals with the identification of the global thermal parameters for the different layers of a 'sandwich' cladding. For this purpose, a flash method is used and an experimental device suitable for tubular geometries was developed. A new estimation method based on the combination of both collected signals in front and rear faces allows the identification of the thermal diffusivity of tubular composites using infrared thermography. The second part focuses on a virtual material approach, established to describe the thermal behavior of a 'sandwich' cladding, starting from the measured properties of the elementary components (fibers and matrix). They are then used as input data for the heat transfer modeling. Confrontations between experimental measurements and numerical results finally allow us to understand the importance of the various key parameters governing the heat transfer. (author) [fr

Method for estimation of the output electric power of PV module with considering environmental factors. Method for estimation of output using I-V curves; Kankyo inshi wo koryoshita taiyo denchi module no shutsuryoku keisanho. I-V tokusei curve ni yoru keisan

Energy Technology Data Exchange (ETDEWEB)

Yamagami, Y; Tani, T [Science University of Tokyo, Tokyo (Japan)

1996-10-27

Based on the basic quality equation of photovoltaic (PV) cell, a quality equation of PV module has been constructed by considering the spectral distribution of solar radiation and its intensity. A calculation method has been also proposed for determining the output from current-voltage (I-V) curves. Effectiveness of this method was examined by comparing calculated results and observed results. Amorphous Si (a-Si) and polycrystal Si PV modules were examined. By considering the environmental factors, differences of the annual output between the calculated and observed values were reduced from 2.50% to 0.95% for the a-Si PV module, and from 2.52% to 1.24% for the polycrystal Si PV module, which resulted in the reduction more than 50%. For the a-Si PV module, the environmental factor most greatly affecting the annual output was the spectral distribution of solar radiation, which was 3.86 times as large as the cell temperature, and 1.04 times as large as the intensity of solar radiation. For the polycrystal PV module, the environmental factor most greatly affecting the annual output was the cell temperature, which was 7.05 times as large as the spectral distribution of solar radiation, and 1.74 times as large as the intensity of solar radiation. 6 refs., 4 figs., 1 tab.

Sub-barrier fusion of Si+Si systems

Science.gov (United States)

Colucci, G.; Montagnoli, G.; Stefanini, A. M.; Bourgin, D.; Čolović, P.; Corradi, L.; Courtin, S.; Faggian, M.; Fioretto, E.; Galtarossa, F.; Goasduff, A.; Haas, F.; Mazzocco, M.; Scarlassara, F.; Stefanini, C.; Strano, E.; Urbani, M.; Szilner, S.; Zhang, G. L.

2017-11-01

The near- and sub-barrier fusion excitation function has been measured for the system 30Si+30Si at the Laboratori Nazionali di Legnaro of INFN, using the 30Si beam of the XTU Tandem accelerator in the energy range 47 - 90 MeV. A set-up based on a beam electrostatic deflector was used for detecting fusion evaporation residues. The measured cross sections have been compared to previous data on 28Si+28Si and Coupled Channels (CC) calculations have been performed using M3Y+repulsion and Woods-Saxon potentials, where the lowlying 2+ and 3- excitations have been included. A weak imaginary potential was found to be necessary to reproduce the low energy 28Si+28Si data. This probably simulates the effect of the oblate deformation of this nucleus. On the contrary, 30Si is a spherical nucleus, 30Si+30Si is nicely fit by CC calculations and no imaginary potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the two symmetric systems highlights their different low energy trend. A difference can also be noted in the two barrier distributions, where the high-energy peak present in 28Si+28Si is not observed for 30Si+30Si, probably due to the weaker couplings in last case.

Sub-barrier fusion of Si+Si systems

Directory of Open Access Journals (Sweden)

Colucci G.

2017-01-01

Full Text Available The near- and sub-barrier fusion excitation function has been measured for the system 30Si+30Si at the Laboratori Nazionali di Legnaro of INFN, using the 30Si beam of the XTU Tandem accelerator in the energy range 47 - 90 MeV. A set-up based on a beam electrostatic deflector was used for detecting fusion evaporation residues. The measured cross sections have been compared to previous data on 28Si+28Si and Coupled Channels (CC calculations have been performed using M3Y+repulsion and Woods-Saxon potentials, where the lowlying 2+ and 3− excitations have been included. A weak imaginary potential was found to be necessary to reproduce the low energy 28Si+28Si data. This probably simulates the effect of the oblate deformation of this nucleus. On the contrary, 30Si is a spherical nucleus, 30Si+30Si is nicely fit by CC calculations and no imaginary potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the two symmetric systems highlights their different low energy trend. A difference can also be noted in the two barrier distributions, where the high-energy peak present in 28Si+28Si is not observed for 30Si+30Si, probably due to the weaker couplings in last case.

Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO{sub 2}/Si and SiO{sub 2}/SiC structures

Energy Technology Data Exchange (ETDEWEB)

Kobayashi, H., E-mail: koba771@ybb.ne.jp [Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); Imamura, K.; Kim, W.-B.; Im, S.-S.; Asuha [Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)

2010-07-15

We have developed low temperature formation methods of SiO{sub 2}/Si and SiO{sub 2}/SiC structures by use of nitric acid, i.e., nitric acid oxidation of Si (or SiC) (NAOS) methods. By use of the azeotropic NAOS method (i.e., immersion in 68 wt% HNO{sub 3} aqueous solutions at 120 deg. C), an ultrathin (i.e., 1.3-1.4 nm) SiO{sub 2} layer with a low leakage current density can be formed on Si. The leakage current density can be further decreased by post-metallization anneal (PMA) at 200 deg. C in hydrogen atmosphere, and consequently the leakage current density at the gate bias voltage of 1 V becomes 1/4-1/20 of that of an ultrathin (i.e., 1.5 nm) thermal oxide layer usually formed at temperatures between 800 and 900 deg. C. The low leakage current density is attributable to (i) low interface state density, (ii) low SiO{sub 2} gap-state density, and (iii) high band discontinuity energy at the SiO{sub 2}/Si interface arising from the high atomic density of the NAOS SiO{sub 2} layer. For the formation of a relatively thick (i.e., {>=}10 nm) SiO{sub 2} layer, we have developed the two-step NAOS method in which the initial and subsequent oxidation is performed by immersion in {approx}40 wt% HNO{sub 3} and azeotropic HNO{sub 3} aqueous solutions, respectively. In this case, the SiO{sub 2} formation rate does not depend on the Si surface orientation. Using the two-step NAOS method, a uniform thickness SiO{sub 2} layer can be formed even on the rough surface of poly-crystalline Si thin films. The atomic density of the two-step NAOS SiO{sub 2} layer is slightly higher than that for thermal oxide. When PMA at 250 deg. C in hydrogen is performed on the two-step NAOS SiO{sub 2} layer, the current-voltage and capacitance-voltage characteristics become as good as those for thermal oxide formed at 900 deg. C. A relatively thick (i.e., {>=}10 nm) SiO{sub 2} layer can also be formed on SiC at 120 deg. C by use of the two-step NAOS method. With no treatment before the NAOS method

Exploring the effect of mesopore size reduction on the column performance of silica-based open tubular capillary columns.

Science.gov (United States)

Hara, Takeshi; Futagami, Shunta; De Malsche, Wim; Baron, Gino V; Desmet, Gert

2018-06-01

We report on a modification in the hydrothermal treatment process of monolithic silica layers used in porous-layered open tubular (PLOT) columns. Lowering the temperature from the customary 95 °C to 80 °C, the size of the mesopores reduced by approximately about 35% from 12-13.5 nm to 7.5-9 nm, while the specific pore volume essentially remains unaltered. This led to an increase of the specific surface area (SA) of about 40%, quasi-independent of the porous layer thickness. The increased surface area provided a corresponding increase in retention, somewhat more (48%) than expected based on the increase in SA for the thin layer columns, and somewhat less than expected (34%) for the thick layer columns. The recipes were applied in 5 μm i.d.-capillaries with a length of 60 cm. Efficiencies under retained conditions amounted up to N = 137,000 for the PLOT column with a layer thickness (d f ) of 300 nm and to N = 109,000 for the PLOT column with d f  = 550 nm. Working under conditions of similar retention, the narrow pore/high SA columns produced with the new 80 °C recipe generated the same number of theoretical plates as the wide pore size/low SA columns produced with the 95 °C recipe. This shows the 80 °C-hydrothermal treatment process allows for an increase in the phase ratio of the PLOT columns without affecting their intrinsic mass transfer properties and separation kinetics. This is further corroborated by the fact that the plate height curves generated with the new and former recipe can both be well-fitted with the Golay-Aris equation without having to change the intra-layer diffusion coefficient. Copyright © 2018 Elsevier B.V. All rights reserved.

Coordination and solvent extraction behaviour of oxozirconium(IV), thorium(IV) and dioxouranium(VI)

International Nuclear Information System (INIS)

Dash, K.C.

1989-01-01

The systematic liquid-liquid extraction behaviour of oxozirconium (IV), thorium(IV) and dioxouranium(VI) have been investigated using a number of synthesised and commercial chelating extractants. The synergism or antagonism for these processes in presence of neutral donor ligands have also been identified and the conditions for separation and isolation of pure individual metal ions have been established. The coordination behaviour of oxozirconium(IV), thorium(IV) and dioxouranium(VI) with a large number of mono- and polydentate ligands have been studied. With oxozirconium(IV), invariably always a cyclic, tetranuclear species is obtained, derived from the tetrameric structure of the parent ZrOCl 2 .8H 2 O which is actually (Zr 4 (OH) 8 (H 2 O) 16 )Cl 8 .12H 2 O. No simple, monomeric oxozirconium(IV) complex was obtained. Uranium(VI) and thorium(IV) form a wide variety of complexes of higher coordination numbers and several bi- and trinuclear complexes were also characterised where the two adjacent metal centres are joined to each other by a double hydroxo-bridge. (author). 69 refs., 3 figs., 4 tabs

High-resolution 2-deoxyglucose mapping of functional cortical columns in mouse barrel cortex.

Science.gov (United States)

McCasland, J S; Woolsey, T A

1988-12-22

Cortical columns associated with barrels in layer IV of the somatosensory cortex were characterized by high-resolution 2-deoxy-D-glucose (2DG) autoradiography in freely behaving mice. The method demonstrates a more exact match between columnar labeling and cytoarchitectonic barrel boundaries than previously reported. The pattern of cortical activation seen with stimulation of a single whisker (third whisker in the middle row of large hairs--C3) was compared with the patterns from two control conditions--normal animals with all whiskers present ("positive control")--and with all large whiskers clipped ("negative control"). Two types of measurements were made from 2DG autoradiograms of tangential cortical sections: 1) labeled cells were identified by eye and tabulated with a computer, and 2) grain densities were obtained automatically with a computer-controlled microscope and image processor. We studied the fine-grained patterns of 2DG labeling in a nine-barrel grid with the C3 barrel in the center. From the analysis we draw five major conclusions. 1. Approximately 30-40% of the total number of neurons in the C3 barrel column are activated when only the C3 whisker is stimulated. This is about twice the number of neurons labeled in the C3 column when all whiskers are stimulated and about ten times the number of neurons labeled when all large whiskers are clipped. 2. There is evidence for a vertical functional organization within a barrel-related whisker column which has smaller dimensions in the tangential direction than a barrel. There are densely labeled patches within a barrel which are unique to an individual cortex. The same patchy pattern is found in the appropriate regions of sections above and below the barrels through the full thickness of the cortex. This functional arrangement could be considered to be a "minicolumn" or more likely a group of "minicolumns" (Mountcastle: In G.M. Edelman and U.B. Mountcastle (eds): The Material Brain: Cortical Organization

Joining of SiC ceramics and SiC/SiC composites

Energy Technology Data Exchange (ETDEWEB)

Rabin, B.H. [Idaho National Engineering Lab., Idaho Falls, ID (United States)

1996-08-01

This project has successfully developed a practical and reliable method for fabricating SiC ceramic-ceramic joints. This joining method will permit the use of SiC-based ceramics in a variety of elevated temperature fossil energy applications. The technique is based on a reaction bonding approach that provides joint interlayers compatible with SiC, and excellent joint mechanical properties at temperatures exceeding 1000{degrees}C. Recent emphasis has been given to technology transfer activities, and several collaborative research efforts are in progress. Investigations are focusing on applying the joining method to sintered {alpha}-SiC and fiber-reinforced SiC/SiC composites for use in applications such as heat exchangers, radiant burners and gas turbine components.

[Online enrichment ability of restricted-access column coupled with high performance liquid chromatography by column switching technique for benazepril hydrochloride].

Science.gov (United States)

Zhang, Xiaohui; Wang, Rong; Xie, Hua; Yin, Qiang; Li, Xiaoyun; Jia, Zhengping; Wu, Xiaoyu; Zhang, Juanhong; Li, Wenbin

2013-05-01

The online enrichment ability of the restricted-access media (RAM) column coupled with high performance liquid chromatography by column switching technique for benazepril hydrochloride in plasma was studied. The RAM-HPLC system consisted of an RAM column as enrichment column and a C18 column as analytical column coupled via the column switching technique. The effects of the injection volume on the peak area and the systematic pressure were studied. When the injection volume was less than 100 microL, the peak area increased with the increase of the injection volume. However, when the injection volume was more than 80 microL, the pressure of whole system increased obviously. In order to protect the whole system, 80 microL was chosen as the maximum injection volume. The peak areas of ordinary injection and the large volume injection showed a good linear relationship. The enrichment ability of RAM-HPLC system was satisfactory. The system was successfully used for the separation and detection of the trace benazepril hydrochloride in rat plasma after its administration. The sensitivity of HPLC can be improved by RAM pre-enrichment. It is a simple and economic measurement method.

Response of steel box columns in fire conditions

Directory of Open Access Journals (Sweden)

Mahmood Yahyai

2017-05-01

Full Text Available Effect of elevated temperatures on the mechanical properties of steel, brings the importance of investigating the effect of fire on the steel structures anxiously. Columns, as the main load-carrying part of a structure, can be highly vulnerable to the fire. In this study, the behavior of steel gravity columns with box cross section exposed to fire has been investigated. These kinds of columns are widely used in common steel structures design in Iran. In current study, the behavior of such columns in fire conditions is investigated through the finite element method. To perform this, the finite element model of a steel column which has been previously tested under fire condition, was prepared. Experimental loading and boundary conditions were considered in the model and was analyzed. Results were validated by experimental data and various specimens of gravity box columns were designed according to the Iran’s steel buildings code, and modeled and analyzed using Abaqus software. The effect of width to thickness ratio of column plates, the load ratio and slenderness on the ultimate strength of the column was investigated, and the endurance time was estimated under ISO 834 standard fire curve. The results revealed that an increase in width to thickness ratio and load ratio leads to reduction of endurance time and the effect of width to thickness ratio on the ultimate strength of the column decreases with temperature increase.

Ductility of reinforced concrete columns confined with stapled strips

International Nuclear Information System (INIS)

Tahir, M.F.; Khan, Q.U.Z.; Shabbir, F.; Sharif, M.B.; Ijaz, N.

2015-01-01

Response of three 150x150x450mm short reinforced concrete (RC) columns confined with different types of confining steel was investigated. Standard stirrups, strips and stapled strips, each having same cross-sectional area, were employed as confining steel around four comer column bars. Experimental work was aimed at probing into the affect of stapled strip confinement on post elastic behavior and ductility level under cyclic axial load. Ductility ratios, strength enhancement factor and core concrete strengths were compared to study the affect of confinement. Results indicate that strength enhancement in RC columns due to strip and stapled strip confinement was not remarkable as compared to stirrup confined column. It was found that as compared to stirrup confined column, stapled strip confinement enhanced the ductility of RC column by 183% and observed axial capacity of stapled strip confined columns was 41 % higher than the strip confined columns. (author)

Retrofit of distillation columns in biodiesel production plants

International Nuclear Information System (INIS)

Nguyen, Nghi; Demirel, Yasar

2010-01-01

Column grand composite curves and the exergy loss profiles produced by the Column-Targeting Tool of the Aspen Plus simulator are used to assess the performance of the existing distillation columns, and reduce the costs of operation by appropriate retrofits in a biodiesel production plant. Effectiveness of the retrofits is assessed by means of thermodynamics and economic improvements. We have considered a biodiesel plant utilizing three distillation columns to purify biodiesel (fatty acid methyl ester) and byproduct glycerol as well as reduce the waste. The assessments of the base case simulation have indicated the need for modifications for the distillation columns. For column T202, the retrofits consisting of a feed preheating and reflux ratio modification have reduced the total exergy loss by 47%, while T301 and T302 columns exergy losses decreased by 61% and 52%, respectively. After the retrofits, the overall exergy loss for the three columns has decreased from 7491.86 kW to 3627.97 kW. The retrofits required a fixed capital cost of approximately $239,900 and saved approximately $1,900,000/year worth of electricity. The retrofits have reduced the consumption of energy considerably, and leaded to a more environmentally friendly operation for the biodiesel plant considered.

Interpretation of the lime column penetration test

International Nuclear Information System (INIS)

Liyanapathirana, D S; Kelly, R B

2010-01-01

Dry soil mix (DSM) columns are used to reduce the settlement and to improve the stability of embankments constructed on soft clays. During construction the shear strength of the columns needs to be confirmed for compliance with technical assumptions. A specialized blade shaped penetrometer known as the lime column probe, has been developed for testing DSM columns. This test can be carried out as a pull out resistance test (PORT) or a push in resistance test (PIRT). The test is considered to be more representative of average column shear strength than methods that test only a limited area of the column. Both PORT and PIRT tests require empirical correlations of measured resistance to an absolute measure of shear strength, in a similar manner to the cone penetration test. In this paper, finite element method is used to assess the probe factor, N, for the PORT test. Due to the large soil deformations around the probe, an Arbitrary Lagrangian Eulerian (ALE) based finite element formulation has been used. Variation of N with rigidity index and the friction at the probe-soil interface are investigated to establish a range for the probe factor.

Multinuclear (27Al, 29Si, 47,49Ti) solid-state NMR of titanium substituted zeolite USY.

Science.gov (United States)

Ganapathy, S; Gore, K U; Kumar, Rajiv; Amoureux, Jean-Paul

2003-01-01

Multinuclear solid-state NMR spectroscopy, employing 29Si MAS,27Al MAS/3Q-MAS and (47,49)Ti wide-line experiments, has been used for the structural characterization of titanium substituted ultra-stable zeolite Y (Ti-USY). 27Al MAS experiments show the presence of aluminum in four (Al(IV)), five (Al(V)), and six (Al(VI)) coordination, whereas the multiplicity within Al(IV) and Al(VI) is revealed by 27Al 3Q-MAS experiments. Two different tetrahedral and octahedral Al environments are resolved and their isotropic chemical shifts (delta(CS)) and second-order quadrupole interaction parameters (P(Q)) have been determined by a graphical analysis of the 3Q-MAS spectra. The emergence of signal with higher intensity at -101 ppm in the 29Si MAS spectrum of Ti-USY samples indicates the possible occurrence of Q4(3Si,1Ti) type silicon environments due to titanium substitution in the faujasite framework. High-field (11.74T) operation, using a probehead specially designed to handle a large sample volume, has enabled the acquisition of 47,49Ti static spectra and identification of the titanium environment in the zeolite. The chemical shielding and electric field gradient tensors for the titanium environment in the zeolite have been determined by a computer simulation of the quadrupolar broadened static 47,49Ti NMR spectra.

The effect of oxidation time on the parameters of ITO/Si solar cell prepared by spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Kandil, S. A; Afifi, H. H; El-hefnawi, S. H; Eliwa, A.Y [Electronic Research Institute, Dokki, Cairo (Egypt)

2000-07-01

The indium tin oxide (ITO/N-Si) solar cells have been fabricated by spray pyrolysis technique. The silicon wafers are heated at 500 Celsius degrees with different oxidation time (2-20 min). The best values obtained for ITO/Si solar cell output parameters; open circuit voltage V{sub o}c, short circuit current density J{sub s}c, fill factor FF and efficiency {eta} are 0.48 V, 15 mA/cm{sup 2}, 0.7 and 10.1% respectively. The preceding results were obtained under conditions of 5 minutes oxidation time and the surface area equal to 8 mm{sup 2} when the light intensity is 50 MW/ cm{sup 2}. The values of V{sub o}c, J{sub s}c, FF and {eta} are affected strongly by the varying the oxidation time. This paper is devoted to explain the effect of the interfacial layer SiO{sub 2} thickness on the ITO/Si solar cell parameters as deduced from the I-V and C-V measurements. [Spanish] Mediante tecnicas de pirolisis de dispersion se han fabricado celdas solares de oxido de Indio estanado ITO/N-Si. Las obleas de silicon se calientan a 500 con diferentes tiempos de oxidacion (2-20 min.) Los mejores valores obtenidos para los parametros de produccion de las celdas solares ITO-Si de voltaje en circuito abierto V{sub o}c densidad de corriente de corto circuito J{sub s}c factor de llenado FF y eficiencia {eta} son de 0.48 V, 15 mA/cm{sup 2}, 0.7% y 10.1% respectivamente los resultados precedentes se obtuvieron bajo condiciones de 5 minutos de tiempo de oxidacion y la superficie del area=8 mm{sup 2} cuando la intensidad de la luz es de 50mW/Cm{sup 2}. Los valores de V{sub o}c, J{sub s}c, FF y {eta} se afectan fuertemente por la variacion del tiempo de oxidacion. Este articulo esta dedicado a explicar el efecto del espesor de la capa interfacial de SiO{sub 2} en los parametros de la celda solar ITO-Si como se deduce de las mediciones I-V y C-V.

Behaviour of FRP confined concrete in square columns

OpenAIRE

Diego Villalón, Ana de; Arteaga Iriarte, Ángel; Fernandez Gomez, Jaime Antonio; Perera Velamazán, Ricardo; Cisneros, Daniel

2015-01-01

A significant amount of research has been conducted on FRP-confined circular columns, but much less is known about rectangular/square columns in which the effectiveness of confinement is much reduced. This paper presents the results of experimental investigations on low strength square concrete columns confined with FRP. Axial compression tests were performed on ten intermediate size columns. The tests results indicate that FRP composites can significantly improve the bearing capacity and duc...

Numerical Simulations of Settlement of Jet Grouting Columns

Directory of Open Access Journals (Sweden)

Juzwa Anna

2016-03-01

Full Text Available The paper presents the comparison of results of numerical analyses of interaction between group of jet grouting columns and subsoil. The analyses were conducted for single column and groups of three, seven and nine columns. The simulations are based on experimental research in real scale which were carried out by authors. The final goal for the research is an estimation of an influence of interaction between columns working in a group.

Strengthening of Steel Columns under Load: Torsional-Flexural Buckling

Directory of Open Access Journals (Sweden)

Martin Vild

2016-01-01

Full Text Available The paper presents experimental and numerical research into the strengthening of steel columns under load using welded plates. So far, the experimental research in this field has been limited mostly to flexural buckling of columns and the preload had low effect on the column load resistance. This paper focuses on the local buckling and torsional-flexural buckling of columns. Three sets of three columns each were tested. Two sets corresponding to the base section (D and strengthened section (E were tested without preloading and were used for comparison. Columns from set (F were first preloaded to the load corresponding to the half of the load resistance of the base section (D. Then the columns were strengthened and after they cooled, they were loaded to failure. The columns strengthened under load (F had similar average resistance as the columns welded without preloading (E, meaning the preload affects even members susceptible to local buckling and torsional-flexural buckling only slightly. This is the same behaviour as of the tested columns from previous research into flexural buckling. The study includes results gained from finite element models of the problem created in ANSYS software. The results obtained from the experiments and numerical simulations were compared.

Study on two phase flow characteristics in annular pulsed extraction column with different ratio of annular width to column diameter

International Nuclear Information System (INIS)

Qin Wei; Dai Youyuan; Wang Jiading

1994-01-01

Annular pulsed extraction column can successfully provide large throughput and can be made critically safe for fuel reprocessing. This investigation is to study the two phase flow characteristics in annular pulsed extraction column with four different annular width. 30% TBP (in kerosene)-water is used (water as continuous phase). Results show that modified Pratt correlation is valid under the experimental operation conditions for the annular pulsed extraction column. The characteristic velocity U K decreased with the increase of energy input and increased with the increase of the ratio of annular width to column diameter. Flooding velocity correlation is suggested. The deviation of the calculated values from the experimental data is within +20% for four annular width in a pulsed extraction column

Structure and scintillation properties of CsI(Tl) films on Si single crystal substrates

Energy Technology Data Exchange (ETDEWEB)

Guo, Lina [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Liu, Shuang, E-mail: shuangliu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Chen, Dejun; Zhang, Shangjian; Liu, Yong; Zhong, Zhiyong [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Falco, Charles M. [University of Arizona, College of Optical Sciences, AZ 85721 (United States)

2016-10-30

Highlights: • We obtained the desired micro-columnar structure of CsI(Tl) films on the orienting Si substrates. • We improved the micro-columnar structure of CsI(Tl) films under the relatively large deposition rate through using the substrate with a pre-deposited CsI nanolayer. • We modeled the interface structures between the CsI(Tl) films with (200) and (310) orientation and Si(111) substrates to explain the preferred orientation of film under the influence of the orienting substrate significantly. • We gained a new spectrum of the CsI(Tl) films peaked at 740 nm wavelength. - Abstract: CsI(Tl) scintillation films fabricated on glass substrates are widely applied for X-ray imaging because their ability to grow in micro-columnar structure and proper emission wavelength matching CCD cameras. But the coupling process between the CsI(Tl) films and Si-based photo detector would cause coupling loss. In this work, CsI(Tl) films were deposited on the orienting Si substrates and the Si substrates covered by the pre-deposited CsI nanolayers. Structure and scintillation properties of films were examined by using scanning electron microscopy, X-ray diffraction, photoluminescence and radioluminescent spectrum. The films deposited on the orienting Si substrates show the micro-columnar morphology with perfect single crystalline structure and the photoluminescence spectra with bimodal distribution. The performances of the films prepared on the pre-deposited CsI nanolayer, containing micro-columns structure and the light yield are improved.

Structure and scintillation properties of CsI(Tl) films on Si single crystal substrates

International Nuclear Information System (INIS)

Guo, Lina; Liu, Shuang; Chen, Dejun; Zhang, Shangjian; Liu, Yong; Zhong, Zhiyong; Falco, Charles M.

2016-01-01

Highlights: • We obtained the desired micro-columnar structure of CsI(Tl) films on the orienting Si substrates. • We improved the micro-columnar structure of CsI(Tl) films under the relatively large deposition rate through using the substrate with a pre-deposited CsI nanolayer. • We modeled the interface structures between the CsI(Tl) films with (200) and (310) orientation and Si(111) substrates to explain the preferred orientation of film under the influence of the orienting substrate significantly. • We gained a new spectrum of the CsI(Tl) films peaked at 740 nm wavelength. - Abstract: CsI(Tl) scintillation films fabricated on glass substrates are widely applied for X-ray imaging because their ability to grow in micro-columnar structure and proper emission wavelength matching CCD cameras. But the coupling process between the CsI(Tl) films and Si-based photo detector would cause coupling loss. In this work, CsI(Tl) films were deposited on the orienting Si substrates and the Si substrates covered by the pre-deposited CsI nanolayers. Structure and scintillation properties of films were examined by using scanning electron microscopy, X-ray diffraction, photoluminescence and radioluminescent spectrum. The films deposited on the orienting Si substrates show the micro-columnar morphology with perfect single crystalline structure and the photoluminescence spectra with bimodal distribution. The performances of the films prepared on the pre-deposited CsI nanolayer, containing micro-columns structure and the light yield are improved.

First principles calculation of material properties of group IV elements and III-V compounds

Science.gov (United States)

Malone, Brad Dean

This thesis presents first principles calculations on the properties of group IV elements and group III-V compounds. It includes investigations into what structure a material is likely to form in, and given that structure, what are its electronic, optical, and lattice dynamical properties as well as what are the properties of defects that might be introduced into the sample. The thesis is divided as follows: • Chapter 1 contains some of the conceptual foundations used in the present work. These involve the major approximations which allow us to approach the problem of systems with huge numbers of interacting electrons and atomic cores. • Then, in Chapter 2, we discuss one of the major limitations to the DFT formalism introduced in Chapter 1, namely its inability to predict the quasiparticle spectra of materials and in particular the band gap of a semiconductor. We introduce a Green's function approach to the electron self-energy Sigma known as the GW approximation and use it to compute the quasiparticle band structures of a number of group IV and III-V semiconductors. • In Chapter 3 we present a first-principles study of a number of high-pressure metastable phases of Si with tetrahedral bonding. The phases studied include all experimentally determined phases that result from decompression from the metallic beta-Sn phase, specifically the BC8 (Si-III), hexagonal diamond (Si-IV), and R8 (Si-XII). In addition to these, we also study the hypothetical ST12 structure found upon decompression from beta-Sn in germanium. • Our attention is then turned to the first principles calculations of optical properties in Chapter 4. The Bethe-Salpeter equation is then solved to obtain the optical spectrum of this material including electron-hole interactions. The calculated optical spectrum is compared with experimental data for other forms of silicon commonly used in photovoltaic devices, namely the cubic, polycrystalline, and amorphous forms. • In Chapter 5 we present

Collapse of tall granular columns in fluid

Science.gov (United States)

Kumar, Krishna; Soga, Kenichi; Delenne, Jean-Yves

2017-06-01

Avalanches, landslides, and debris flows are geophysical hazards, which involve rapid mass movement of granular solids, water, and air as a multi-phase system. In order to describe the mechanism of immersed granular flows, it is important to consider both the dynamics of the solid phase and the role of the ambient fluid. In the present study, the collapse of a granular column in fluid is studied using 2D LBM - DEM. The flow kinematics are compared with the dry and buoyant granular collapse to understand the influence of hydrodynamic forces and lubrication on the run-out. In the case of tall columns, the amount of material destabilised above the failure plane is larger than that of short columns. Therefore, the surface area of the mobilised mass that interacts with the surrounding fluid in tall columns is significantly higher than the short columns. This increase in the area of soil - fluid interaction results in an increase in the formation of turbulent vortices thereby altering the deposit morphology. It is observed that the vortices result in the formation of heaps that significantly affects the distribution of mass in the flow. In order to understand the behaviour of tall columns, the run-out behaviour of a dense granular column with an initial aspect ratio of 6 is studied. The collapse behaviour is analysed for different slope angles: 0°, 2.5°, 5° and 7.5°.

CUB DI (Deionization) column control system

International Nuclear Information System (INIS)

Seino, K.C.

1999-01-01

For the old MR (Main Ring), deionization was done with two columns in CUB, using an ion exchange process. Typically 65 GPM of LCW flew through a column, and the resistivity was raised from 3 Mohm-cm to over 12 Mohm-cm. After a few weeks, columns lost their effectiveness and had to be regenerated in a process involving backwashing and adding hydrochloric acid and sodium hydroxide. For normal MR operations, LCW returned from the ring and passed through the two columns in parallel for deionization, although the system could have been operated satisfactorily with only one in use. A 3000 gallon reservoir (the Spheres) provided a reserve of LCW for allowing water leaks and expansions in the MR. During the MI (Main Injector) construction period, the third DI column was added to satisfy requirements for the MI. When the third column was added, the old regeneration controller was replaced with a new controller based on an Allen-Bradley PLC (i.e., SLC-5/04). The PLC is widely used and well documented, and therefore it may allow us to modify the regeneration programs in the future. In addition to the above regeneration controller, the old control panels (which were used to manipulate pumps and valves to supply LCW in Normal mode and to do Int. Recir. (Internal Recirculation) and Makeup) were replaced with a new control system based on Sixtrak Gateway and I/O modules. For simplicity, the new regeneration controller is called as the US Filter system, and the new control system is called as the Fermilab system in this writing

Microstructure and Mechanical Property of SiCf/SiC and Cf/SiC Composites

International Nuclear Information System (INIS)

Lee, S P; Cho, K S; Lee, H U; Lee, J K; Bae, D S; Byun, J H

2011-01-01

The mechanical properties of SiC based composites reinforced with different types of fabrics have been investigated, in conjunction with the detailed analyses of their microstructures. The thermal shock properties of SiC f /SiC composites were also examined. All composites showed a dense morphology in the matrix region. Carbon coated PW-SiC f /SiC composites had a good fracture energy, even if their strength was lower than that of PW-C f /SiC composites. SiC f /SiC composites represented a great reduction of flexural strength at the thermal shock temperature difference of 300 deg. C.

Diversity of Pol IV function is defined by mutations at the maize rmr7 locus.

Directory of Open Access Journals (Sweden)

Jennifer L Stonaker

2009-11-01

Full Text Available Mutations affecting the heritable maintenance of epigenetic states in maize identify multiple small RNA biogenesis factors including NRPD1, the largest subunit of the presumed maize Pol IV holoenzyme. Here we show that mutations defining the required to maintain repression7 locus identify a second RNA polymerase subunit related to Arabidopsis NRPD2a, the sole second largest subunit shared between Arabidopsis Pol IV and Pol V. A phylogenetic analysis shows that, in contrast to representative eudicots, grasses have retained duplicate loci capable of producing functional NRPD2-like proteins, which is indicative of increased RNA polymerase diversity in grasses relative to eudicots. Together with comparisons of rmr7 mutant plant phenotypes and their effects on the maintenance of epigenetic states with parallel analyses of NRPD1 defects, our results imply that maize utilizes multiple functional NRPD2-like proteins. Despite the observation that RMR7/NRPD2, like NRPD1, is required for the accumulation of most siRNAs, our data indicate that different Pol IV isoforms play distinct roles in the maintenance of meiotically-heritable epigenetic information in the grasses.

NOx retention in scrubbing column

International Nuclear Information System (INIS)

Nakazone, A.K.; Costa, R.E.; Lobao, A.S.T.; Matsuda, H.T.; Araujo, B.F.

1988-07-01

During the UO 2 dissolution in nitric acid, some different species of NO x are released. The off gas can either be refluxed to the dissolver or be released and retained on special columns. The final composition of the solution is the main parameter to take in account. A process for nitrous gases retention using scubber columns containing H 2 O or diluted HNO 3 is presented. Chemiluminescence measurement was employed to NO x evalution before and after scrubbing. Gas flow, temperature, residence time are the main parameters considered in this paper. For the dissolution of 100g UO 2 in 8M nitric acid, a 6NL/h O 2 flow was the best condition for the NO/NO 2 oxidation with maximum adsorption in the scrubber columns. (author) [pt

Dispersion Free Doped and Undoped AlGaN/GaN HEMTs on Sapphire and SiC Substrates

NARCIS (Netherlands)

Kraemer, M.C.J.C.M.; Jacobs, B.; Kwaspen, J.J.M.; Suijker, E.M.; Hek, A.P. de; Karouta, F.; Kaufmann, L.M.F.; Hoskens, R.C.P.

2004-01-01

We present dispersion free pulsed current voltage (I-V) and radio frequency (RF) power results of undoped and doped AlGaN/GaN HEMTs on sapphire and SiC substrates. The most significant processing step leading to these results is the application of a reactive ion etching (RIE) argon (Ar) plasma

RF plasma deposition of thin Si{sub x}Ge{sub y}C{sub z}:H films using a combination of organometallic source materials

Energy Technology Data Exchange (ETDEWEB)

Rapiejko, C. [Institute for Materials Science and Engineering, Technical University of LodzLz Stefanowskiego 1, 90-924 Lodz (Poland); Gazicki-Lipman, M. [Institute for Materials Science and Engineering, Technical University of LodzLz Stefanowskiego 1, 90-924 Lodz (Poland)]. E-mail: gazickim@p.lodz.pl; Klimek, L. [Institute for Materials Science and Engineering, Technical University of LodzLz Stefanowskiego 1, 90-924 Lodz (Poland); Szymanowski, H. [Institute for Materials Science and Engineering, Technical University of LodzLz Stefanowskiego 1, 90-924 Lodz (Poland); Strojek, M. [Institute for Materials Science and Engineering, Technical University of LodzLz Stefanowskiego 1, 90-924 Lodz (Poland)

2004-12-22

Elements of the IV group of periodic table have been strongly present in the fast development of PECVD techniques for the last two decades at least. As a result, deposition technologies of such materials as a-Si:H, a-C:H, m{mu}-C:H or DLC have been successfully established. What has followed is an ever growing interest in binary systems of the A{sub x}(IV)B{sub y}(IV):H kind. One possible way to deposit such systems is to use organosilicon compounds (to deposit Si{sub x}C{sub y}:H films) or organogermanium compounds (to deposit Ge{sub x}C{sub y}:H films), as source substances. The present paper reports on a RF plasma deposition of a Si{sub x}Ge{sub y}C{sub z}:H ternary system, using a combination of organosilicon and organogermanium compounds. Thin Si/Ge/C films have been fabricated in a small volume (ca. 2 dm{sup 3}) parallel plate RF plasma reactor using, as a source material, a combination of tetramethylsilane (TMS) and tetramethylgermanium (TMG) vapours carried by argon. SEM investigations reveal a continuous compact character of the coatings and their uniform thickness. The elemental composition of the films has been studied using EDX analysis. The results of the analysis show that the elemental composition of the films can be controlled by both the TMG/TMS ratio of the initial mixture and the RF power input. Ellipsometric measurements show good homogeneity of these materials. Chemical bonding in the films has been studied using the FTIR technique. Bandgap calculations have been carried out using ellipsometric data and by applying both the Tauc law and the Moss approach.

Analysis of the electrical characteristics of Zn/ZnSe/n-Si/Au-Sb structure fabricated using SILAR method as a function of temperature

Energy Technology Data Exchange (ETDEWEB)

Guezeldir, B. [Department of Physics, Faculty of Sciences, University of Atatuerk, 25240 Erzurum (Turkey); Saglam, M., E-mail: msaglam@atauni.edu.t [Department of Physics, Faculty of Sciences, University of Atatuerk, 25240 Erzurum (Turkey); Ates, A. [Department of Physics, Faculty of Sciences, University of Atatuerk, 25240 Erzurum (Turkey)

2010-09-10

The Successive Ionic Layer Adsorption and Reaction (SILAR) method has been used to deposit ZnSe thin film onto Si substrate to obtain the Zn/ZnSe/n-Si/Au-Sb sandwich structure. The X-Ray Diffraction (XRD) and Scanning Electron Microscope (SEM) methods are used to investigate the structural and morphological properties of films. The XRD and SEM studies reveal that the films are covered well on Si substrate and have good polycrystalline structure and crystalline levels. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of this structure have been investigated as a function of the temperature (80-300 K) with 20 K steps. The ideality factor (n) and zero-bias barrier height ({Phi}{sub b0}) value which obtained from I-V curves were found to be strongly temperature dependent. While {Phi}{sub b0} increases with increasing temperature, n decreases. This behavior of the {Phi}{sub b0} and n can be attributed to barrier inhomogeneities at the metal-semiconductor (M-S) interface. The temperature dependence of the I-V characteristics of the Zn/ZnSe/n-Si/Au-Sb structure can reveal the existence of a double Gaussian distribution. The mean barrier height and the Richardson constant values are obtained as 0.925 eV and 1.140 eV, 130 A/cm{sup 2} K{sup 2} and 127 A/cm{sup 2} K{sup 2}, from the modified Richardson plot, respectively. Furthermore, the barrier height and carrier concentration are calculated from reverse bias C{sup -2}-V measurements at 200 kHz frequency as a function of the temperature.

Synthesis and characterization of chiral thorium(IV) and uranium(IV) benzamidinate complexes

Energy Technology Data Exchange (ETDEWEB)

Schoene, Sebastian; Maerz, Juliane; Kaden, Peter; Patzschke, Michael; Ikeda-Ohno, Atsushi [Helmholtz-Zentrum Dresden-Rossendorf e.V., Dresden (Germany). Chemistry of the F-Elements

2017-06-01

Two chiral benzamidinate complexes of tetravalent actinides (Th(IV) and U(IV)) were synthesized using a salt metathesis reaction of the corresponding actinide(IV) tetrachlorides and the potassium salt of the chiral benzamidine (S,S)-N,N-Bis-(1-phenylethyl)-benzamidine ((S)-HPEBA). The structure of the complexes was determined with single crystal X-ray diffraction. These are the first examples of chiral amidinate complexes of actinides.

Improved nucleic acid descriptors for siRNA efficacy prediction.

Science.gov (United States)

Sciabola, Simone; Cao, Qing; Orozco, Modesto; Faustino, Ignacio; Stanton, Robert V

2013-02-01

Although considerable progress has been made recently in understanding how gene silencing is mediated by the RNAi pathway, the rational design of effective sequences is still a challenging task. In this article, we demonstrate that including three-dimensional descriptors improved the discrimination between active and inactive small interfering RNAs (siRNAs) in a statistical model. Five descriptor types were used: (i) nucleotide position along the siRNA sequence, (ii) nucleotide composition in terms of presence/absence of specific combinations of di- and trinucleotides, (iii) nucleotide interactions by means of a modified auto- and cross-covariance function, (iv) nucleotide thermodynamic stability derived by the nearest neighbor model representation and (v) nucleic acid structure flexibility. The duplex flexibility descriptors are derived from extended molecular dynamics simulations, which are able to describe the sequence-dependent elastic properties of RNA duplexes, even for non-standard oligonucleotides. The matrix of descriptors was analysed using three statistical packages in R (partial least squares, random forest, and support vector machine), and the most predictive model was implemented in a modeling tool we have made publicly available through SourceForge. Our implementation of new RNA descriptors coupled with appropriate statistical algorithms resulted in improved model performance for the selection of siRNA candidates when compared with publicly available siRNA prediction tools and previously published test sets. Additional validation studies based on in-house RNA interference projects confirmed the robustness of the scoring procedure in prospective studies.

Magnetron-sputter epitaxy of β-FeSi2(220)/Si(111) and β-FeSi2(431)/Si(001) thin films at elevated temperatures

International Nuclear Information System (INIS)

Liu Hongfei; Tan Chengcheh; Chi Dongzhi

2012-01-01

β-FeSi 2 thin films have been grown on Si(111) and Si(001) substrates by magnetron-sputter epitaxy at 700 °C. On Si(111), the growth is consistent with the commonly observed orientation of [001]β-FeSi 2 (220)//[1-10]Si(111) having three variants, in-plane rotated 120° with respect to one another. However, on Si(001), under the same growth conditions, the growth is dominated by [-111]β-FeSi 2 (431)//[110]Si(001) with four variants, which is hitherto unknown for growing β-FeSi 2 . Photoelectron spectra reveal negligible differences in the valance-band and Fe2p core-level between β-FeSi 2 grown on Si(111) and Si(001) but an apparent increased Si-oxidization on the surface of β-FeSi 2 /Si(001). This phenomenon is discussed and attributed to the Si-surface termination effect, which also suggests that the Si/Fe ratio on the surface of β-FeSi 2 (431)/Si(001) is larger than that on the surface of β-FeSi 2 (220)/Si(111).

Päiväkoti Riemula

OpenAIRE

Alanko, Reetta; Ihanamäki, Katja

2012-01-01

Opinnäytetyössä kuvataan yleisesti päivähoidon kehitystä Suomessa sekä päivähoitoa yrittäjän näkökulmasta, tuoden esille sen tämän päivän haasteet ja mahdollisuudet. Työssä on pohdittu yhteistyön merkitystä kunnan kanssa ja sitä, miten kunta voi osaltaan joko rajoittaa tai edesauttaa yksityisen päivähoitoyrityksen toimintaa. Opinnäytetyössä kerrotaan teoriassa Päiväkoti Riemula nimisen, erityispäivähoitopalveluita tarjoavan yrityksen perustamiseen liittyvistä suunnitelmista. Suunnitelluss...

Covalently-controlled properties by design in group IV graphane analogues.

Science.gov (United States)

Jiang, Shishi; Arguilla, Maxx Q; Cultrara, Nicholas D; Goldberger, Joshua E

2015-01-20

CONSPECTUS: The isolation of graphene has sparked a renaissance in the study of two-dimensional materials. This led to the discovery of new and unique phenomena such as extremely high carrier mobility, thermal conductivity, and mechanical strength not observed in the parent 3D structure. While the emergence of these phenomena has spurred widespread interest in graphene, the paradox between the high-mobility Fermi-Dirac electronic structure and the need for a sizable band gap has challenged its application in traditional semiconductor devices. While graphene is a fascinating and promising material, the limitation of its electronic structure has inspired researchers to explore other 2D materials beyond graphene. In this Account, we summarize our recent work on a new family of two-dimensional materials based on sp(3)-hybridized group IV elements. Ligand-terminated Si, Ge, and Sn graphane analogues are an emerging and unique class of two-dimensional materials that offer the potential to tailor the structure, stability, and properties. Compared with bulk Si and Ge, a direct and larger band gap is apparent in group IV graphane analogues depending on the surface ligand. These materials can be synthesized in gram-scale quantities and in thin films via the topotactic deintercalation of layered Zintl phase precursors. Few layers and single layers can be isolated via manual exfoliation and deintercalation of epitaxially grown Zintl phases on Si/Ge substrates. The presence of a fourth bond on the surface of the layers allows various surface ligand termination with different organic functional groups achieved via conventional soft chemical routes. In these single-atom thick materials, the electronic structure can be systematically controlled by varying the identities of the main group elements and by attaching different surface terminating ligands. In contrast to transition metal dichalcogenides, the weaker interlayer interaction allows the direct band gap single layer

Low-velocity Shocks Traced by Extended SiO Emission along the W43 Ridges: Witnessing the Formation of Young Massive Clusters

Science.gov (United States)

Nguyen-Lu'o'ng, Q.; Motte, F.; Carlhoff, P.; Louvet, F.; Lesaffre, P.; Schilke, P.; Hill, T.; Hennemann, M.; Gusdorf, A.; Didelon, P.; Schneider, N.; Bontemps, S.; Duarte-Cabral, A.; Menten, K. M.; Martin, P. G.; Wyrowski, F.; Bendo, G.; Roussel, H.; Bernard, J.-P.; Bronfman, L.; Henning, T.; Kramer, C.; Heitsch, F.

2013-10-01

The formation of high-mass stars is tightly linked to that of their parental clouds. Here, we focus on the high-density parts of W43, a molecular cloud undergoing an efficient event of star formation. Using a column density image derived from Herschel continuum maps, we identify two high-density filamentary clouds, called the W43-MM1 and W43-MM2 ridges. Both have gas masses of 2.1 × 104 M ⊙ and 3.5 × 104 M ⊙ above >10^{23}\\, {{cm}^{-2}} and within areas of ~6 and ~14 pc2, respectively. The W43-MM1 and W43-MM2 ridges are structures that are coherent in velocity and gravitationally bound, despite their large velocity dispersion measured by the N2H+ (1-0) lines of the W43-HERO IRAM large program. Another intriguing result is that these ridges harbor widespread (~10 pc2) bright SiO (2-1) emission, which we interpret to be the result of low-velocity shocks (models to demonstrate that a small percentage (10%) of Si atoms in low-velocity shocks, observed initially in gas phase or in grain mantles, can explain the observed SiO column density in the W43 ridges. The spatial and velocity overlaps between the ridges of high-density gas and the shocked SiO gas suggest that ridges could be forming via colliding flows driven by gravity and accompanied by low-velocity shocks. This mechanism may be the initial conditions for the formation of young massive clusters.

Modalization in the Political Column of Tempo Magazine

OpenAIRE

Rahmah, Maria Betti Sinaga and

2017-01-01

The study focuses on analyzing the use of modalization in the Political Column of Tempo Magazine. The objectives were to find out the type of modalization and to describe the use of modalization in the Political Column of Tempo magazine. The data were taken from Political Column of Tempo magazine published in June and July 2017. The source of data was Political Column in Tempo magazine. The data analysis applied descriptive qualitative research. There were 135 clauses which contained Modaliza...

Column, particularly extraction column, for fission and/or breeder materials

International Nuclear Information System (INIS)

Vietzke, H.; Pirk, H.

1980-01-01

An absorber rod with a B 4 C insert is situated in the long extraction column for a uranyl nitrate solution or a plutonium nitrate solution. The geometrical dimensions are designed for a high throughput with little corrosion. (DG) [de

Posterior column reconstruction improves fusion rates at the level of osteotomy in three-column posterior-based osteotomies.

Science.gov (United States)

Lewis, Stephen J; Mohanty, Chandan; Gazendam, Aaron M; Kato, So; Keshen, Sam G; Lewis, Noah D; Magana, Sofia P; Perlmutter, David; Cape, Jennifer

2018-03-01

To determine the incidence of pseudarthrosis at the osteotomy site after three-column spinal osteotomies (3-COs) with posterior column reconstruction. 82 consecutive adult 3-COs (66 patients) with a minimum of 2-year follow-up were retrospectively reviewed. All cases underwent posterior 3-COs with two-rod constructs. The inferior facets of the proximal level were reduced to the superior facets of the distal level. If that was not possible, a structural piece of bone graft either from the local resection or a local rib was slotted in the posterior column defect to re-establish continual structural posterior bone across the lateral margins of the resection. No interbody cages were used at the level of the osteotomy. There were 34 thoracic osteotomies, 47 lumbar osteotomies and one sacral osteotomy with a mean follow-up of 52 (24-126) months. All cases underwent posterior column reconstructions described above and the addition of interbody support or additional posterior rods was not performed for fusion at the osteotomy level. Among them, 29 patients underwent one or more revision surgeries. There were three definite cases of pseudarthrosis at the osteotomy site (4%). Six revisions were also performed for pseudarthrosis at other levels. Restoration of the structural integrity of the posterior column in three-column posterior-based osteotomies was associated with > 95% fusion rate at the level of the osteotomy. Pseudarthrosis at other levels was the second most common reason for revision following adjacent segment disease in the long-term follow-up.

Effect of pre- and post-column band broadening on the performance of high-speed chromatography columns under isocratic and gradient conditions.

Science.gov (United States)

Vanderlinden, Kim; Broeckhoven, Ken; Vanderheyden, Yoachim; Desmet, Gert

2016-04-15

We report on the results of an experimental and theoretical study of the effect of the extra-column band broadening (ECBB) on the performance of narrow-bore columns filled with the smallest particles that are currently commercially available. Emphasis is on the difference between the effect of ECBB under gradient and isocratic conditions, as well as on the ability to model and predict the ECBB effects using well-established band broadening expressions available from the theory of chromatography. The fine details and assumptions that need to be taken into account when using these expressions are discussed. The experiments showed that, the steeper the gradient, the more pronounced the extra-column band broadening losses become. Whereas the pre-column band broadening can in both isocratic and gradient elution be avoided by playing on the possibilities to focus the analytes on top of the column (e.g. by using the POISe injection method when running isocratic separations), the post-column extra-column band broadening is inescapable in both cases. Inducing extra-column band broadening by changing the inner diameter of the post-column tubing from 65 to 250 μm, we found that all peaks in the chromatogram are strongly affected (around a factor of 1.9 increase in relative peak width) when running steep gradients, while usually only the first eluting peak was affected in the isocratic mode or when running shallow gradients (factor 1.6-1.8 increase in relative peak width for the first eluting analyte). Copyright © 2016 Elsevier B.V. All rights reserved.

Study of temperature-dependent charge conduction in silicon-nanocrystal/SiO{sub 2} multilayers

Energy Technology Data Exchange (ETDEWEB)

Mavilla, Narasimha Rao; Chavan, Vinayak [National Centre for Photovoltaic Research and Education (NCPRE), Powai, Mumbai 400 076 (India); Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400 076 (India); Solanki, Chetan Singh [National Centre for Photovoltaic Research and Education (NCPRE), Powai, Mumbai 400 076 (India); Department of Energy Science and Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400 076 (India); Vasi, Juzer [National Centre for Photovoltaic Research and Education (NCPRE), Powai, Mumbai 400 076 (India); Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400 076 (India)

2016-08-01

Silicon-nanocrystals (Si-NCs) realized by SiO{sub x} {sub <} {sub 2}/SiO{sub 2} multilayer (ML) approach have shown promise for realizing tightly-controlled dimensions, thus efficiently exploiting the size-dependent quantum effects for device applications. Unfortunately, the confining insulating barriers (SiO{sub 2} sublayers), instrumental for realizing quantum size effects in Si-NC MLs, can also hinder the charge conduction which is crucial for device applications including Si-NC based tandem solar cells and multi-exciton solar cells. Owing to this, a comprehensive study of conduction mechanisms has been carried out using a thorough analysis of temperature-dependent dark I-V measurements of SiO{sub 2} thin film and Si-NC multilayer samples fabricated by Inductively Coupled Plasma CVD (ICPCVD). As the ML samples consisted of interleaved SiO{sub 2} sublayers, current in SiO{sub 2} thin film has initially been studied to understand the conduction properties of bulk ICPCVD SiO{sub 2}. For 21 nm thick SiO{sub 2} film, conduction is observed to be dominated by Fowler–Nordheim (FN) tunneling for higher electric fields (> 8 MV/cm; independent of temperature), while for lower electric fields (5–8 MV/cm) at higher temperatures, the trap-related Generalized Poole–Frenkel (GPF) is dominant. This signified the role of traps in modifying the conduction in bulk ICPCVD SiO{sub 2} films. We then present the conduction in ML samples. For multilayer samples with SiO{sub 2} sublayer thickness of 1.5 nm and 2.5 nm, Direct Tunneling (DT) is observed to be dominant, while for SiO{sub 2} sublayer thickness of 3.5 nm, Space Charge Limited Conduction (SCLC) with exponential trap distribution is found to be the dominant conduction mechanism. This signifies the role of traps in modifying the conduction in Si-NC multilayer samples and SiO{sub 2} sublayer thickness dependence. - Highlights: • Electrical conduction in SiO{sub 2} film & Si-nanocrystal layers (Si-NCs) is reported. • Si

LOW-VELOCITY SHOCKS TRACED BY EXTENDED SiO EMISSION ALONG THE W43 RIDGES: WITNESSING THE FORMATION OF YOUNG MASSIVE CLUSTERS

International Nuclear Information System (INIS)

Nguyen-Luong, Q.; Martin, P. G.; Motte, F.; Louvet, F.; Hill, T.; Hennemann, M.; Didelon, P.; Carlhoff, P.; Schilke, P.; Lesaffre, P.; Gusdorf, A.; Schneider, N.; Bontemps, S.; Duarte-Cabral, A.; Menten, K. M.; Wyrowski, F.; Bendo, G.; Roussel, H.; Bernard, J.-P.; Bronfman, L.

2013-01-01

The formation of high-mass stars is tightly linked to that of their parental clouds. Here, we focus on the high-density parts of W43, a molecular cloud undergoing an efficient event of star formation. Using a column density image derived from Herschel continuum maps, we identify two high-density filamentary clouds, called the W43-MM1 and W43-MM2 ridges. Both have gas masses of 2.1 × 10 4 M ☉ and 3.5 × 10 4 M ☉ above >10 23 cm -2 and within areas of ∼6 and ∼14 pc 2 , respectively. The W43-MM1 and W43-MM2 ridges are structures that are coherent in velocity and gravitationally bound, despite their large velocity dispersion measured by the N 2 H + (1-0) lines of the W43-HERO IRAM large program. Another intriguing result is that these ridges harbor widespread (∼10 pc 2 ) bright SiO (2-1) emission, which we interpret to be the result of low-velocity shocks (≤10 km s –1 ). We measure a significant relationship between the SiO (2-1) luminosity and velocity extent and show that it distinguishes our observations from the high-velocity shocks associated with outflows. We use state-of-the-art shock models to demonstrate that a small percentage (10%) of Si atoms in low-velocity shocks, observed initially in gas phase or in grain mantles, can explain the observed SiO column density in the W43 ridges. The spatial and velocity overlaps between the ridges of high-density gas and the shocked SiO gas suggest that ridges could be forming via colliding flows driven by gravity and accompanied by low-velocity shocks. This mechanism may be the initial conditions for the formation of young massive clusters

SiC Nanoparticles Toughened-SiC/MoSi2-SiC Multilayer Functionally Graded Oxidation Protective Coating for Carbon Materials at High Temperatures

Science.gov (United States)

Abdollahi, Alireza; Ehsani, Naser; Valefi, Zia; Khalifesoltani, Ali

2017-05-01

A SiC nanoparticle toughened-SiC/MoSi2-SiC functionally graded oxidation protective coating on graphite was prepared by reactive melt infiltration (RMI) at 1773 and 1873 K under argon atmosphere. The phase composition and anti-oxidation behavior of the coatings were investigated. The results show that the coating was composed of MoSi2, α-SiC and β-SiC. By the variations of Gibbs free energy (calculated by HSC Chemistry 6.0 software), it could be suggested that the SiC coating formed at low temperatures by solution-reprecipitation mechanism and at high temperatures by gas-phase reactions and solution-reprecipitation mechanisms simultaneously. SiC nanoparticles could improve the oxidation resistance of SiC/MoSi2-SiC multiphase coating. Addition of SiC nanoparticles increases toughness of the coating and prevents spreading of the oxygen diffusion channels in the coating during the oxidation test. The mass loss and oxidation rate of the SiC nanoparticle toughened-SiC/MoSi2-SiC-coated sample after 10-h oxidation at 1773 K were only 1.76% and 0.32 × 10-2 g/cm3/h, respectively.

Reliability implications of defects in high temperature annealed Si/SiO2/Si structures

International Nuclear Information System (INIS)

Warren, W.L.; Fleetwood, D.M.; Shaneyfelt, M.R.; Winokur, P.S.; Devine, R.A.B.; Mathiot, D.; Wilson, I.H.; Xu, J.B.

1994-01-01

High-temperature post-oxidation annealing of poly-Si/SiO 2 /Si structures such as metal-oxide-semiconductor capacitors and metal-oxide-semiconductor field effect transistors is known to result in enhanced radiation sensitivity, increased 1/f noise, and low field breakdown. The authors have studied the origins of these effects from a spectroscopic standpoint using electron paramagnetic resonance (EPR) and atomic force microscopy. One result of high temperature annealing is the generation of three types of paramagnetic defect centers, two of which are associated with the oxide close to the Si/SiO 2 interface (oxygen-vacancy centers) and the third with the bulk Si substrate (oxygen-related donors). In all three cases, the origin of the defects may be attributed to out-diffusion of O from the SiO 2 network into the Si substrate with associated reduction of the oxide. The authors present a straightforward model for the interfacial region which assumes the driving force for O out-diffusion is the chemical potential difference of the O in the two phases (SiO 2 and the Si substrate). Experimental evidence is provided to show that enhanced hole trapping and interface-trap and border-trap generation in irradiated high-temperature annealed Si/SiO 2 /Si systems are all related either directly, or indirectly, to the presence of oxygen vacancies

Separation of Cr(III) from Cr(VI) by Triton X-100 Cerium (Iv) Phosphate as a Surface Active Ion Exchanger

International Nuclear Information System (INIS)

El-Azony, K.M.; Ismail Aydia, M.; El-Mohty, A.A.

2010-01-01

A new and simple high-performance liquid chromatography (HPLC) method with ultraviolet (UV) detection has been developed for the determination of both Cr (III) and Cr (VI) ions. Chromium species were determined by HPLC using a stationary phase consisting of a reversed phase column (Nucleosil phenyl column; 250 mm x 4.6 mm,5 μm), and a mobile phase consisting of a mixture of methanol: water(70 : 30 v/v), in which the complexing agent di-(2-ethylhexyl) phosphoric acid (DEHPA) was dissolved. The UV detection was carried out at wavelength 650 nm. Separation of Cr (III) from Cr (VI) on Triton X-100 cerium(IV) phosphate(TX-100 CeP) as a surface active ion exchanger was investigated. TX-100 CeP has been synthesized, characterized using IR, X-Ray, TGA/DTA and elemental analysis. The ion exchange capacity and chemical stability in different HCl concentration have been studied

Pd-PEPPSI-IPent-SiO2 : A Supported Catalyst for Challenging Negishi Coupling Reactions in Flow.

Science.gov (United States)

Price, Gregory A; Hassan, Abbas; Chandrasoma, Nalin; Bogdan, Andrew R; Djuric, Stevan W; Organ, Michael G

2017-10-16

A silica-supported precatalyst, Pd-PEPPSI-IPent-SiO 2 , has been prepared and evaluated for its proficiency in the Negishi cross-coupling of hindered and electronically deactivated coupling partners. The precatalyst Pd-PEPPSI-IPent loaded onto packed bed columns shows high catalytic activity for the room-temperature coupling of deactivated/hindered biaryl partners. Also for the first time, the flowed Csp 3 -Csp 2 coupling of secondary alkylzinc reagents to (hetero)aromatics has been achieved with high selectivity with Pd-PEPPSI-IPent-SiO 2 . These couplings required residence times as short as 3 minutes to effect completion of these challenging transformations with excellent selectivity for the nonrearranged product. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabrication and Mechanical Properties of SiCw(p/SiC-Si Composites by Liquid Si Infiltration using Pyrolysed Rice Husks and SiC Powders as Precursors

Directory of Open Access Journals (Sweden)

Dan Zhu

2014-03-01

Full Text Available Dense silicon carbide (SiC matrix composites with SiC whiskers and particles as reinforcement were prepared by infiltrating molten Si at 1550 °C into porous preforms composed of pyrolysed rice husks (RHs and extra added SiC powder in different ratios. The Vickers hardness of the composites showed an increase from 18.6 to 21.3 GPa when the amount of SiC added in the preforms was 20% (w/w, and then decreased to 17.3 GPa with the increase of SiC added in the preforms up to 80% (w/w. The values of flexural strength of the composites initially decreased when 20% (w/w SiC was added in the preform and then increased to 587 MPa when the SiC concentration reached 80% (w/w. The refinement of SiC particle sizes and the improvement of the microstructure in particle distribution of the composites due to the addition of external SiC played an effective role in improving the mechanical properties of the composites.

IV access in dental practice.

LENUS (Irish Health Repository)

Fitzpatrick, J J

2009-04-01

Intravenous (IV) access is a valuable skill for dental practitioners in emergency situations and in IV sedation. However, many people feel some apprehension about performing this procedure. This article explains the basic principles behind IV access, and the relevant anatomy and physiology, as well as giving a step-by-step guide to placing an IV cannula.

Water hammer with column separation : a historical review

NARCIS (Netherlands)

Bergant, A.; Simpson, A.R.; Tijsseling, A.S.

2006-01-01

Column separation refers to the breaking of liquid columns in fully filled pipelines. This may occur in a water-hammer event when the pressure in a pipeline drops to the vapor pressure at specific locations such as closed ends, high points or knees (changes in pipe slope). The liquid columns are

Oscillations in the fusion of the Si + Si systems; Oscilaciones en la fusion de sistemas de Si + Si

Energy Technology Data Exchange (ETDEWEB)

Aguilera R, E F; Kolata, J J; DeYoung, P A; Vega, J J [ININ, 52045 Ocoyoacac, Estado de Mexico (Mexico)

1986-02-15

Excitation functions for the yields of all the residual nuclei from the {sup 28} Si + {sup 28,30} and {sup 30} Si + {sup 30} Si reactions have been measured via the {gamma}-ray technique for center of mass energies in the region within one and two times the Coulomb barrier.Thirteen elements were identified for the first reaction and ten for the other two. While no structure is shown by the data for the {sup 28} + {sup 28} Si reaction, we have found evidence for intermediate width structure in the 2{alpha} and the {alpha}pn channels in {sup 28} Si + {sup 30} Si and for broad structure in the total fusion cross sections for {sup 30} Si + {sup 30} Si. Calculations using a barrier penetration model with one free parameter reproduce the experimental results quite well. Evaporation model calculations indicate that the individual structure of the nuclei involved in the respective decay chains might have an important influence upon the deexcitation process at the energies relevant to our experiments. (Author)

Innovative SiC/SiC composite for nuclear applications

International Nuclear Information System (INIS)

Chaffron, L.; Sauder, C.; Lorrette, C.; Briottet, L.; Michaux, A.; Gelebart, L.; Coupe, A.; Zabiego, M.; Le Flem, M.; Seran, J. L.

2013-01-01

Among various refractory materials, SiC/SiC ceramic matrix composites (CMC) are of prime interest for fusion and advanced fission energy applications, due to their excellent irradiation tolerance and safety features (low activation, low tritium permeability,K). Initially developed as fuel cladding materials for the Fourth generation Gas cooled Fast Reactor (GFR), this material has been recently envisaged by CEA for different core structures of Sodium Fast Reactor (SFR) which combines fast neutrons and high temperature (500 deg.C). Regarding fuel cladding generic application, in the case of GFR, the first challenge facing this project is to demonstrate the feasibility of a fuel operating under very harsh conditions that are (i) temperatures of structures up to 700 deg.C in nominal and over 1600 deg.C in accidental conditions, (ii) irradiation damage higher than 60 dpa SiC , (iii) neutronic transparency, which disqualifies conventional refractory metals as structural core materials, (iv) mechanical behavior that guarantees in most circumstances the integrity of the first barrier (e.g.: ε> 0.5%), which excludes monolithic ceramics and therefore encourages the development of new types of fibrous composites SiC/SiC adapted to the fast reactor conditions. No existing material being capable to match all these requirements, CEA has launched an ambitious program of development of an advanced material satisfying the specifications [1]. This project, that implies many laboratories, inside and outside CEA, has permitted to obtain a very high quality compound that meets most of the challenging requirements. We present hereinafter few recent results obtained regarding the development of the composite. One of the most relevant challenges was to make a gas-tight composite up to the ultimate rupture. Indeed, multi-cracking of the matrix is the counterpart of the damageable behavior observed in these amazing compounds. Among different solutions envisaged, an innovative one has been

Functionalization of group IV semiconductors; Funktionalisierung von Gruppe IV-Halbleitern

Energy Technology Data Exchange (ETDEWEB)

Hoeb, Marco Andreas

2011-01-15

The present work is focused on the structural and electronic properties of thermally and photochemically grafted alkene molecules. The semiconductor substrates used in this work are the group IV-semiconductors silicon, diamond, and silicon carbide. On silicon, functionalization via the commonly known hydrosilylation reaction was performed. During thermal treatment in vacuum-distilled 1-octadecene, the alkene molecules covalently added to the substrate via Si-C bond formation, resulting in self-assembled organic monolayers. The reaction resulted in smooth and homogeneous alkyl-terminated surfaces. Static water contact angles were determined to be 113 . Photoelectron spectroscopy was performed and showed no evidence of surface oxidation. The high packing of the organic layers is indicated by the asymmetric methylene vibrational mode, which has been redshifted by -4 cm{sup -1} with respect to the liquid alkene mode position. The average molecular tilt-angle of the alkyl-molecules, relative to the surface normal, has been identified to be 34 . The transport properties have been determined to be dominated by tunneling processes. On diamond, first results on the thermal functionalization of hydrogen- and oxygen-terminated surfaces are demonstrated. Thermal functionalization with octadecene showed high selectivity, while hydrogenated diamond surfaces were found to be inert to the thermally induced reaction with alkenes. In contrast, alkene molecules were successfully grafted to oxygen-terminated sites via covalent C-O-C bonds. Reaction temperatures as high as 160 C were necessary to initiate the functionalization process.Wetting experiments on the alkyl-modified surfaces revealed contact angle values of 103 . The high quality of the monolayers on oxygenated surfaces was confirmed by IR-spectroscopy. In addition, polarized IR-measurements indicated a tilt angle of 23 . On silicon carbide, thermal and UV-induced alkoxylation were studied. Hydrofluoric acid treatment

Technology roadmap for development of SiC sensors at plasma processes laboratory

Directory of Open Access Journals (Sweden)

Mariana Amorim Fraga

2010-08-01

Full Text Available Recognizing the need to consolidate the research and development (R&D activities in microelectronics fields in a strategic manner, the Plasma Processes Laboratory of the Technological Institute of Aeronautics (LPP-ITA has established a technology roadmap to serve as a guide for activities related to development of sensors based on silicon carbide (SiC thin films. These sensors have also potential interest to the aerospace field due to their ability to operate in harsh environment such as high temperatures and intense radiation. In the present paper, this roadmap is described and presented in four main sections: i introduction, ii what we have already done in the past, iii what we are doing in this moment, and iv our targets up to 2015. The critical technological issues were evaluated for different categories: SiC deposition techniques, SiC processing techniques for sensors fabrication and sensors characterization. This roadmap also presents a shared vision of how R&D activities in microelectronics should develop over the next five years in our laboratory.

HPLC-CUPRAC post-column derivatization method for the determination of antioxidants: a performance comparison between porous silica and core-shell column packing.

Science.gov (United States)

Haque, Syed A; Cañete, Socrates Jose P

2018-01-01

An HPLC method employing a post-column derivatization strategy using the cupric reducing antioxidant capacity reagent (CUPRAC reagent) for the determining antioxidants in plant-based materials leverages the separation capability of regular HPLC approaches while allowing for detection specificity for antioxidants. Three different column types, namely core-shell and porous silica including two chemically different core-shell materials (namely phenyl-hexyl and C18), were evaluated to assess potential improvements that could be attained by changing from a porous silica matrix to a core-shell matrix. Tea extracts were used as sample matrices for the evaluation specifically looking at catechin and epigallocatechin gallate (EGCG). Both the C18 and phenyl-hexyl core-shell columns showed better performance compared to the C18 porous silica one in terms of separation, peak shape, and retention time. Among the two core-shell materials, the phenyl-hexyl column showed better resolving power compared to the C18 column. The CUPRAC post-column derivatization method can be improved using core-shell columns and suitable for quantifying antioxidants, exemplified by catechin and EGCG, in tea samples.

Analyses of the As doping of SiO{sub 2}/Si/SiO{sub 2} nanostructures

Energy Technology Data Exchange (ETDEWEB)

Ruffino, Francesco; Miritello, Maria [CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy); Tomasello, Mario Vincenzo [Scuola Superiore di Catania, via San Nullo 5/i, 95123 Catania (Italy); De Bastiani, Riccardo; Grimaldi, Maria Grazia [Dipartimento di Fisica ed Astronomia, Universita di Catania, via S. Sofia 64, 95123 Catania (Italy); CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy); Nicotra, Giuseppe; Spinella, Corrado [Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), VIII Strada 5, 95121 Catania (Italy)

2011-03-15

We illustrate the behaviour of As when it is confined, by the implantation technique, in a SiO{sub 2}(70nm)/Si(30nm)/SiO{sub 2}(70nm) multilayer and its spatial redistribution when annealing processes are performed. By Rutherford backscattering spectrometry and Z-contrast transmission electron microscopy we found an As accumulation at the Si/SiO{sub 2} interfaces and at the Si grain boundaries with no segregation of the As in the Si layer. Such an effect is in agreement with a model that assumes a traps distribution in the Si in the first 2-3 nm above the SiO{sub 2}/Si interfaces and along the Si grain boundaries. The traps concentration at the Si/SiO{sub 2} interfaces was estimated in 10{sup 14} traps/cm{sup 2}. The outlined results can open perspectives on the doping properties of As in Si nanocrystals, whose applications in nanoelectronics and optoelectronics are widely investigated (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Detection of subsurface core-level shifts in Si 2p core-level photoemission from Si(111)-(1x1):As

Energy Technology Data Exchange (ETDEWEB)

Paggel, J.J. [Philipps-Universitaet Marburg (Germany); Hasselblatt, M.; Horn, K. [Fritz-Haber Institut der Max-Planck-Gesellschraft, Berlin (Germany)] [and others

1997-04-01

The (7 x 7) reconstruction of the Si(111) surface arises from a lowering energy through the reduction of the number of dangling bonds. This reconstruction can be removed by the adsorption of atoms such as hydrogen which saturate the dangling bonds, or by the incorporation of atoms, such as arsenic which, because of the additional electron it possesses, can form three bonds and a nonreactive lone pair orbital from the remaining two electrons. Core and valence level photoemission and ion scattering data have shown that the As atoms replace the top silicon atoms. Previous core level spectra were interpreted in terms of a bulk and a single surface doublet. The authors present results demonstrate that the core level spectrum contains two more lines. The authors assign these to subsurface silicon layers which also experience changes in the charge distribution when a silicon atom is replaced by an arsenic atom. Subsurface core level shifts are not unexpected since the modifications of the electronic structure and/or of photohole screening are likely to decay into the bulk and not just to affect the top-most substrate atoms. The detection of subsurface components suggests that the adsorption of arsenic leads to charge flow also in the second double layer of the Si(111) surface. In view of the difference in atomic radius between As and Si, it was suggested that the (1 x 1): As surface is strained. The presence of charge rearrangement up to the second double layer implies that the atomic coordinates also exhibit deviations from their ideal Si(111) counterparts, which might be detected through a LEED I/V or photoelectron diffraction analysis.

Role of SiC substrate surface on local tarnishing of deposited silver mirror stacks

Science.gov (United States)

Limam, Emna; Maurice, Vincent; Seyeux, Antoine; Zanna, Sandrine; Klein, Lorena H.; Chauveau, Grégory; Grèzes-Besset, Catherine; Savin De Larclause, Isabelle; Marcus, Philippe

2018-04-01

The role of the SiC substrate surface on the resistance to the local initiation of tarnishing of thin-layered silver stacks for demanding space mirror applications was studied by combined surface and interface analysis on model stack samples deposited by cathodic magnetron sputtering and submitted to accelerated aging in gaseous H2S. It is shown that suppressing the surface pores resulting from the bulk SiC material production process by surface pretreatment eliminates the high aspect ratio surface sites that are imperfectly protected by the SiO2 overcoat after the deposition of silver. The formation of channels connecting the silver layer to its environment through the failing protection layer at the surface pores and locally enabling H2S entry and Ag2S growth as columns until emergence at the stack surface is suppressed, which markedly delays tarnishing initiation and thereby preserves the optical performance. The results revealed that residual tarnishing initiation proceeds by a mechanism essentially identical in nature but involving different pathways short circuiting the protection layer and enabling H2S ingress until the silver layer. These permeation pathways are suggested to be of microstructural origin and could correspond to the incompletely coalesced intergranular boundaries of the SiO2 layer.

Rocket and satellite observations of the local interstellar medium

International Nuclear Information System (INIS)

Jelinsky, P.N.

1988-01-01

The purpose of the study described in this thesis was to obtained new information on the structure of the local interstellar medium (ISM). Two separate experiments using different instruments were used in this study. The first experiment employed a spectrometer with a spectral bandpass from 350-1150 angstrom which was placed at the focus of a 95 cm, f/2.8 normal incidence telescope flown on an Aries sounding rocket. The purpose of this experiment was to measure the interstellar absorption edges, due to neutral helium and neutral hydrogen, in the spectrum of a hot white dwarf. The hot white dwarf G191-B2B was observed for 87 seconds during the flight. Unfortunately, due to high pressure in the rocket, no scientifically useful data was obtained during the flight. The second experiment utilized the high resolution spectrometer on the International Ultraviolet Explorer satellite. The purpose of the experiment was to observe interstellar absorption lines in the spectrum of hot white dwarfs. A new method of determining the equivalent widths of absorption lines and their uncertainties was developed. The neutral hydrogen column density is estimated from the N I, Si II, and C II columns. Unfortunately, the uncertainties in the neutral hydrogen columns are very large, only two are constrained to better than an order of magnitude. High ionization species (N V, Si IV, and C IV) are seen in five of the stars. Upper limits to the temperature of the ISM are determined from the velocity dispersions. The temperature of the low ionization gas toward four of the stars is constrained to be less than 50,000 K

SiO EMISSION AS A TRACER OF X-RAY DOMINATED CHEMISTRY IN THE GALACTIC CENTER

International Nuclear Information System (INIS)

Amo-Baladron, M. A.; Martin-Pintado, J.; Morris, M. R.; Muno, M. P.; RodrIguez-Fernandez, N. J.

2009-01-01

We present emission maps of the Sgr A molecular cloud complex at the Galactic center (GC) in the J = 2 → 1 line of SiO observed with the IRAM 30 m telescope at Pico Veleta. Comparing our SiO(2-1) data cube with that of CS(1-0) emission with similar angular and velocity resolution, we find a correlation between the SiO/CS line intensity ratio and the equivalent width of the Fe Kα fluorescence line at 6.4 keV. We discuss the SiO abundance enhancement in terms of the two most plausible scenarios for the origin of the 6.4 keV Fe line: X-ray reflection nebula (XRN) and low-energy cosmic rays (LECRs). Both scenarios could explain the enhancement in the SiO/CS intensity ratio with the intensity of the 6.4 keV Fe line, but both present difficulties. The XRN scenario requires a population of very small grains to produce the SiO abundance enhancement, together with a past episode of bright X-ray emission from some source in the GC, possibly the central supermassive black hole, SgrA*, ∼300 yr ago. The LECR scenario needs higher gas column densities to produce the observed 6.4 keV Fe line intensities than those derived from our observations. It is possible to explain the SiO abundance enhancement if the LECRs originate in supernovae and their associated shocks produce the SiO abundance enhancement. However, the LECR scenario cannot account for the time variability of the 6.4 keV Fe line, which can be naturally explained by the XRN scenario.

Structural study of Na2O-B2O3-SiO2 glasses from molecular simulations using a polarizable force field.

Science.gov (United States)

Pacaud, Fabien; Delaye, Jean-Marc; Charpentier, Thibault; Cormier, Laurent; Salanne, Mathieu

2017-10-28

Sodium borosilicate glasses Na 2 O-B 2 O 3 -SiO 2 (NBS) are complex systems from a structural point of view. Three main building units are present: tetrahedral SiO 4 and BO 4 (B IV ) and triangular BO 3 (B III ). One of the salient features of these compounds is the change of the B III /B IV ratio with the alkali concentration, which is very difficult to capture in force fields-based molecular dynamics simulations. In this work, we develop a polarizable force field that is able to reproduce the boron coordination and more generally the structure of several NBS systems in the glass and in the melt. The parameters of the potential are fitted from density functional theory calculations only, in contrast with the existing empirical potentials for NBS systems. This ensures a strong improvement on the transferability of the parameters from one composition to another. Using this new force field, the structure of NBS systems is validated against neutron diffraction and nuclear magnetic resonance experiments. A special focus is given to the distribution of B III /B IV with respect to the composition and the temperature.

Investigation of column flotation process on sulphide ore using 2-electrode capacitance sensor: The effect of air flow rate and solid percentage

Science.gov (United States)

Haryono, Didied; Harjanto, Sri; Wijaya, Rifky; Oediyani, Soesaptri; Nugraha, Harisma; Huda, Mahfudz Al; Taruno, Warsito Purwo

2018-04-01

Investigation of column flotation process on sulphide ore using 2-electrode capacitance sensor is presented in this paper. The effect of air flow rate and solid percentage on column flotation process has been experimentally investigated. The purpose of this paper is to understand the capacitance signal characteristic affected by the air flow rate and the solid percentage which can be used to determine the metallurgical performance. Experiments were performed using a laboratory column flotation cell which has a diameter of 5 cm and the total height of 140 cm. The sintered ceramic sparger and wash water were installed at the bottom and above of the column. Two-electrode concave type capacitance sensor was also installed at a distance of 50 cm from the sparger. The sensor was attached to the outer wall of the column, connected to data acquisition system, manufactured by CTECH Labs Edwar Technology and personal computer for further data processing. Feed consisting ZnS and SiO2 with the ratio of 3:2 was mixed with some reagents to make 1 litre of slurry. The slurry was fed into the aerated column at 100 cm above the sparger with a constant rate and the capacitance signals were captured during the process. In this paper, 7.5 and 10% of solid and 2-4 L/min of air flow rate with 0.5 L/min intervals were used as independent variables. The results show that the capacitance signal characteristics between the 7.5 and 10% of solid are different at any given air flow rate in which the 10% solid produced signals higher than those of 7.5%. Metallurgical performance and capacitance signal exhibit a good correlation.

Hydrothermal preparation of nickel(II)/uranium(IV) fluorides with one-, two-, and three-dimensional topologies.

Science.gov (United States)

Bean, Amanda C; Sullens, Tyler A; Runde, Wolfgang; Albrecht-Schmitt, Thomas E

2003-04-21

A modified compositional diagram for the reactions of Ni(C(2)H(3)O(2))(2).4H(2)O with UO(2)(C(2)H(3)O(2))(2).2H(2)O and HF in aqueous media under mild hydrothermal conditions (200 degrees C) has been completed to yield three Ni(II)/U(IV) fluorides, Ni(H(2)O)(4)UF(6).1.5H(2)O (1), Ni(2)(H(2)O)(6)U(3)F(16).3H(2)O (2), and Ni(H(2)O)(2)UF(6)(H(2)O) (3). The structure of 1 consists of one-dimensional columns constructed from two parallel chains of edge-sharing dodecahedral [UF(8)] units. The sides of the columns are terminated by octahedral Ni(II) units that occur as cis-[Ni(H(2)O)(4)F(2)] polyhedra. In contrast, the crystal structure of 2 reveals a two-dimensional Ni(II)/U(IV) architecture built from edge-sharing tricapped trigonal prismatic [UF(9)] units. The top and bottom of the sheets are capped by fac-[Ni(H(2)O)(3)F(3)] octahedra. The structure of 3 is formed from [UF(8)(H(2)O)] tricapped trigonal prisms that edge share with one another to form one-dimensional chains. These chains are then joined together into a three-dimensional network by corner sharing with trans-[Ni(H(2)O)(2)F(4)] octahedra. Crystallographic data: 1, orthorhombic, space group Cmcm, a = 14.3383(8) A, b = 15.6867(8) A, c = 8.0282(4) A, Z = 8; 2, hexagonal, space group P6(3)/mmc, a = 7.9863(5) A, c = 16.566(1) A, Z = 2; 3, monoclinic, space group C2/c, a = 12.059(1) A, b = 6.8895(6) A, c = 7.9351(7) A, beta = 92.833(2) degrees, Z = 4.

Application of a Fast Separation Method for Anti-diabetics in Pharmaceuticals Using Monolithic Column: Comparative Study With Silica Based C-18 Particle Packed Column.

Science.gov (United States)

Hemdan, A; Abdel-Aziz, Omar

2018-04-01

Run time is a predominant factor in HPLC for quality control laboratories especially if there is large number of samples have to be analyzed. Working at high flow rates cannot be attained with silica based particle packed column due to elevated backpressure issues. The use of monolithic column as an alternative to traditional C-18 column was tested for fast separation of pharmaceuticals, where the results were very competitive. The performance comparison of both columns was tested for separation of anti-diabetic combination containing Metformin, Pioglitazone and Glimepiride using Gliclazide as an internal standard. Working at high flow rates with less significant backpressure was obtained with the monolithic column where the run time was reduced from 6 min in traditional column to only 1 min in monolithic column with accepted resolution. The structure of the monolith contains many pores which can adapt the high flow rate of the mobile phase. Moreover, peak symmetry and equilibration time were more efficient with monolithic column.

Complexation of the An(IV) by NTA; Complexation des An(IV) par le NTA

Energy Technology Data Exchange (ETDEWEB)

Bonin, L. [Paris-11 Univ., 91 - Orsay (France)]|[CEA Valrho, Lab. de Chimie des Actinides (LCA), 30 - Marcoule (France)

2006-07-01

In the framework of the Nuclear and Environmental Toxicology program, developed in France, it has been decided to take again the studies concerning the actinides decorporation. A similar study of the neptunium complexation by the citrate ions has been carried out on the complexation of Np(IV) with the nitrilotriacetic acid (NTA). The NTA can be considered as a model molecule of the de-corporating molecules (amino-carboxy- ligand). The results of the spectrophotometric measurements being encouraging, the behaviour of several actinides at the same oxidation state (+IV) (Th(IV), U(IV), Np(IV), and Pu(IV)) has been determined. The experimental results are presented. In order to determine the structure of the complexes of stoichiometry 1:2 An(IV)-(NTA){sub 2} in solution, quantic chemistry calculations and EXAFS measurements have been carried out in parallel. These studies confirm the presence of An(IV)-nitrogen bonds whose length decreases from thorium to plutonium and indicate the presence of a water molecule bound to the thorium and the uranium (coordination number 8 for Np/Pu, 9 for Th/U). The evolution of the complexation constants determined in this study in terms of 1/r (r ionic radius of the cation taking into account its coordination number 8 or 9) confirms the change of the coordination number between Th/U and Np/Pu. (O.M.)

Preparation and evaluation of 400μm I.D. polymer-based hydrophilic interaction chromatography monolithic columns with high column efficiency.

Science.gov (United States)

Liu, Chusheng; Li, Haibin; Wang, Qiqin; Crommen, Jacques; Zhou, Haibo; Jiang, Zhengjin

2017-08-04

The quest for higher column efficiency is one of the major research areas in polymer-based monolithic column fabrication. In this research, two novel polymer-based HILIC monolithic columns with 400μm I.D.×800μm O.D. were prepared based on the thermally initiated co-polymerization of N,N-dimethyl-N-(3-methacrylamidopropyl)-N-(3-sulfopropyl) ammonium betaine (SPP) and ethylene glycol dimethacrylate (EDMA) or N,N'-methylenebisacrylamide (MBA). In order to obtain a satisfactory performance in terms of column permeability, mechanical stability, efficiency and selectivity, the polymerization parameters were systematically optimized. Column efficiencies as high as 142, 000 plates/m and 120, 000 plates/m were observed for the analysis of neutral compounds at 0.6mm/s on the poly(SPP-co-MBA) and poly(SPP-co-EDMA) monoliths, respectively. Furthermore, the Van Deemter plots for thiourea on the two monoliths were compared with that on a commercial silica based ZIC-HILIC column (3.5μm, 200Å, 150mm×300μm I.D.) using ACN/H 2 O (90/10, v/v) as the mobile phase at room temperature. It was noticeable that the Van Deemter curves for both monoliths, particularly the poly(SPP-co-MBA) monolith, are significantly flatter than that obtained for the ZIC-HILIC column, which indicates that in spite of their larger internal diameters, they yield better overall efficiency, with less peak dispersion, across a much wider range of usable linear velocities. A clearly better separation performance was also observed for nucleobases, nucleosides, nucleotides and small peptides on the poly(SPP-co-MBA) monolith compared to the ZIC-HILIC column. It is particularly worth mentioning that these 400μm I.D. polymer-based HILIC monolithic columns exhibit enhanced mechanical strength owing to the thicker capillary wall of the fused-silica capillaries. Copyright © 2017 Elsevier B.V. All rights reserved.

Electronic structure of O-doped SiGe calculated by DFT + U method

Science.gov (United States)

Zhao, Zong-Yan; Yang, Wen; Yang, Pei-Zhi

2016-12-01

To more in depth understand the doping effects of oxygen on SiGe alloys, both the micro-structure and properties of O-doped SiGe (including: bulk, (001) surface, and (110) surface) are calculated by DFT + U method in the present work. The calculated results are as follows. (i) The (110) surface is the main exposing surface of SiGe, in which O impurity prefers to occupy the surface vacancy sites. (ii) For O interstitial doping on SiGe (110) surface, the existences of energy states caused by O doping in the band gap not only enhance the infrared light absorption, but also improve the behaviors of photo-generated carriers. (iii) The finding about decreased surface work function of O-doped SiGe (110) surface can confirm previous experimental observations. (iv) In all cases, O doing mainly induces the electronic structures near the band gap to vary, but is not directly involved in these variations. Therefore, these findings in the present work not only can provide further explanation and analysis for the corresponding underlying mechanism for some of the experimental findings reported in the literature, but also conduce to the development of μc-SiGe-based solar cells in the future. Project supported by the Natural Science Foundation of Yunnan Province, China (Grant No. 2015FB123), the 18th Yunnan Province Young Academic and Technical Leaders Reserve Talent Project, China (Grant No. 2015HB015), and the National Natural Science Foundation of China (Grant No. U1037604).

HEAT TRANSFER ANALYSIS FOR FIXED CST AND RF COLUMNS

International Nuclear Information System (INIS)

Lee, S

2007-01-01

In support of a small column ion exchange (SCIX) process for the Savannah River Site waste processing program, transient and steady state two-dimensional heat transfer models have been constructed for columns loaded with cesium-saturated crystalline silicotitanate (CST) or spherical Resorcinol-Formaldehyde (RF) beads and 6 molar sodium tank waste supernate. Radiolytic decay of sorbed cesium results in heat generation within the columns. The models consider conductive heat transfer only with no convective cooling and no process flow within the columns (assumed column geometry: 27.375 in ID with a 6.625 in OD center-line cooling pipe). Heat transfer at the column walls was assumed to occur by natural convection cooling with 35 C air. A number of modeling calculations were performed using this computational heat transfer approach. Minimal additional calculations were also conducted to predict temperature increases expected for salt solution processed through columns of various heights at the slowest expected operational flow rate of 5 gpm. Results for the bounding model with no process flow and no active cooling indicate that the time required to reach the boiling point of ∼130 C for a CST-salt solution mixture containing 257 Ci/liter of Cs-137 heat source (maximum expected loading for SCIX applications) at 35 C initial temperature is about 6 days. Modeling results for a column actively cooled with external wall jackets and the internal coolant pipe (inlet coolant water temperature: 25 C) indicate that the CST column can be maintained non-boiling under these conditions indefinitely. The results also show that the maximum temperature of an RF-salt solution column containing 133 Ci/liter of Cs-137 (maximum expected loading) will never reach boiling under any conditions (maximum predicted temperature without cooling: 88 C). The results indicate that a 6-in cooling pipe at the center of the column provides the most effective cooling mechanism for reducing the maximum

Novel field emission SEM column with beam deceleration technology

International Nuclear Information System (INIS)

Jiruše, Jaroslav; Havelka, Miloslav; Lopour, Filip

2014-01-01

A novel field-emission SEM column has been developed that features Beam Deceleration Mode, high-probe current and ultra-fast scanning. New detection system in the column is introduced to detect true secondary electron signal. The resolution power at low energy was doubled for conventional SEM optics and moderately improved for immersion optics. Application examples at low landing energies include change of contrast, imaging of non-conductive samples and thin layers. - Highlights: • A novel field-emission SEM column has been developed. • Implemented beam deceleration improves the SEM resolution at 1 keV two times. • New column maintains high analytical potential and wide field of view. • Detectors integrated in the column allow gaining true SE and BE signal separately. • Performance of the column is demonstrated on low energy applications

Novel field emission SEM column with beam deceleration technology

Energy Technology Data Exchange (ETDEWEB)

Jiruše, Jaroslav; Havelka, Miloslav; Lopour, Filip

2014-11-15

A novel field-emission SEM column has been developed that features Beam Deceleration Mode, high-probe current and ultra-fast scanning. New detection system in the column is introduced to detect true secondary electron signal. The resolution power at low energy was doubled for conventional SEM optics and moderately improved for immersion optics. Application examples at low landing energies include change of contrast, imaging of non-conductive samples and thin layers. - Highlights: • A novel field-emission SEM column has been developed. • Implemented beam deceleration improves the SEM resolution at 1 keV two times. • New column maintains high analytical potential and wide field of view. • Detectors integrated in the column allow gaining true SE and BE signal separately. • Performance of the column is demonstrated on low energy applications.

First-principles study of the effects of Silicon doping on the Schottky barrier of TiSi2/Si interfaces

Science.gov (United States)

Wang, Han; Silva, Eduardo; West, Damien; Sun, Yiyang; Restrepo, Oscar; Zhang, Shengbai; Kota, Murali

As scaling of semiconductor devices is pursued in order to improve power efficiency, quantum effects due to the reduced dimensions on devices have become dominant factors in power, performance, and area scaling. In particular, source/drain contact resistance has become a limiting factor in the overall device power efficiency and performance. As a consequence, techniques such as heavy doping of source and drain have been explored to reduce the contact resistance, thereby shrinking the width of depletion region and lowering the Schottky barrier height. In this work, we study the relation between doping in Silicon and the Schottky barrier of a TiSi2/Si interface with first-principles calculation. Virtual Crystal Approximation (VCA) is used to calculate the average potential of the interface with varying doping concentration, while the I-V curve for the corresponding interface is calculated with a generalized one-dimensional transfer matrix method. The relation between substitutional and interstitial Boron and Phosphorus dopant near the interface, and their effect on tuning the Schottky barrier is studied. These studies provide insight to the type of doping and the effect of dopant segregation to optimize metal-semiconductor interface resistance.

Strained Si/SiGe MOS transistor model

Directory of Open Access Journals (Sweden)

Tatjana Pešić-Brđanin

2009-06-01

Full Text Available In this paper we describe a new model of surfacechannel strained-Si/SiGe MOSFET based on the extension of non-quasi-static (NQS circuit model previously derived for bulk-Si devices. Basic equations of the NQS model have been modified to account for the new physical parameters of strained-Si and relaxed-SiGe layers. From the comparisons with measurements, it is shown that a modified NQS MOS including steady-state self heating can accurately predict DC characteristics of Strained Silicon MOSFETs.

Effect of hydrogen on passivation quality of SiNx/Si-rich SiNx stacked layers deposited by catalytic chemical vapor deposition on c-Si wafers

International Nuclear Information System (INIS)

Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

2015-01-01

We investigate the role of hydrogen content and fixed charges of catalytic chemical vapor deposited (Cat-CVD) SiN x /Si-rich SiN x stacked layers on the quality of crystalline silicon (c-Si) surface passivation. Calculated density of fixed charges is on the order of 10 12 cm −2 , which is high enough for effective field effect passivation. Hydrogen content in the films is also found to contribute significantly to improvement in passivation quality of the stacked layers. Furthermore, Si-rich SiN x films deposited with H 2 dilution show better passivation quality of SiN x /Si-rich SiN x stacked layers than those prepared without H 2 dilution. Effective minority carrier lifetime (τ eff ) in c-Si passivated by SiN x /Si-rich SiN x stacked layers is as high as 5.1 ms when H 2 is added during Si-rich SiN x deposition, which is much higher than the case of using Si-rich SiN x films prepared without H 2 dilution showing τ eff of 3.3 ms. - Highlights: • Passivation mechanism of Si-rich SiN x /SiN x stacked layers is investigated. • H atoms play important role in passivation quality of the stacked layer. • Addition of H 2 gas during Si-rich SiN x film deposition greatly enhances effective minority carrier lifetime (τ eff ). • For a Si-rich SiN x film with refractive index of 2.92, τ eff improves from 3.3 to 5.1 ms by H 2 addition

The design of a new concept chromatography column.

Science.gov (United States)

Camenzuli, Michelle; Ritchie, Harald J; Ladine, James R; Shalliker, R Andrew

2011-12-21

Active Flow Management is a new separation technique whereby the flow of mobile phase and the injection of sample are introduced to the column in a manner that allows migration according to the principles of the infinite diameter column. A segmented flow outlet fitting allows for the separation of solvent or solute that elutes along the central radial section of the column from that of the sample or solvent that elutes along the wall region of the column. Separation efficiency on the analytical scale is increased by 25% with an increase in sensitivity by as much as 52% compared to conventional separations.

Inert carriers for column extraction chromatography

International Nuclear Information System (INIS)

Katykhin, G.S.

1978-01-01

Inert carriers used in column extraction chromatography are reviewed. Such carriers are devided into two large groups: hydrophilic carriers which possess high surface energy and are well wetted only with strongly polar liquids (kieselguhrs, silica gels, glasses, cellulose, Al 2 O 3 ) and water-repellent carriers which possess low surface energy and are well wetted with various organic solvents (polyethylene, polytetrafluorethylene polytrifluorochlorethylene). Properties of various carriers are presented: structure, chemical and radiation stability, adsorption properties, extracting agent capacity. The effect of structure and sizes of particles on the efficiency of chromatography columns is considered. Ways of immovable phase deposition on the carrier and the latter's regeneration. Peculiarities of column packing for preparative and continuous chromatography are discussed

Electrical properties of reactive-ion-sputtered Al{sub 2}O{sub 3} on 4H-SiC

Energy Technology Data Exchange (ETDEWEB)

Shukla, Madhup, E-mail: madhup.iit@gmail.com [Microelectronics and MEMS Laboratory, Electrical Engineering Department, Indian Institute of Technology Madras, Chennai 600036 (India); Dutta, Gourab [Microelectronics and MEMS Laboratory, Electrical Engineering Department, Indian Institute of Technology Madras, Chennai 600036 (India); Mannam, Ramanjaneyulu [Department of Physics and Nano Functional Materials Technology Centre, Indian Institute of Technology Madras, Chennai 600036 (India); DasGupta, Nandita [Microelectronics and MEMS Laboratory, Electrical Engineering Department, Indian Institute of Technology Madras, Chennai 600036 (India)

2016-05-31

Al{sub 2}O{sub 3} was deposited on n-type 4H-SiC by reactive-ion-sputtering (RIS) at room temperature using aluminum target and oxygen as a reactant gas. Post deposition oxygen annealing was carried out at a temperature of 1100 °C. Metal-oxide-semiconductor (MOS) test structures were fabricated on 4H-SiC using RIS-Al{sub 2}O{sub 3} as gate dielectric. The C-V characteristics reveal a significant reduction in flat band voltage for oxygen annealed RIS-Al{sub 2}O{sub 3} samples (V{sub fb} = 1.95 V) compared to as-deposited Al{sub 2}O{sub 3} samples (V{sub fb} > 10 V), suggesting a reduction in negative oxide charge after oxygen annealing. Oxygen annealed RIS-Al{sub 2}O{sub 3} samples also showed significant improvement in I-V characteristics compared to as-deposited RIS-Al{sub 2}O{sub 3} samples. A systematic analysis was carried out to investigate the leakage current mechanisms present in oxygen annealed RIS-Al{sub 2}O{sub 3} on 4H-SiC at higher gate electric field and at different operating temperature. For measurement temperature (T) < 303 K, Fowler–Nordheim (FN) tunneling was found to be the dominant leakage mechanism and for higher temperature (T ≥ 303 K), a combination of FN tunneling and Poole-Frenkel (PF) emission was confirmed. The improvement in I-V characteristics of oxygen annealed RIS-Al{sub 2}O{sub 3}/4H-SiC MOS devices is attributed to large effective barrier height (Φ{sub B} = 2.53 eV) at Al{sub 2}O{sub 3}/SiC interface, due to the formation of an interfacial SiO{sub 2} layer during oxygen annealing, as confirmed from X-ray Photoelectron Spectroscopy results. Further improvement in C-V characteristics for oxygen annealed RIS-Al{sub 2}O{sub 3}/4H-SiC MOS devices was observed after forming gas annealing at 400 °C. - Highlights: • O{sub 2} annealed RIS-Al{sub 2}O{sub 3} on 4H-SiC showed better performance than other reported result. • FN, FN + PF tunneling was found in O{sub 2} annealed RIS-Al{sub 2}O{sub 3} for different temp. ranges. • Al

An InP/Si heterojunction photodiode fabricated by self-aligned corrugated epitaxial lateral overgrowth

International Nuclear Information System (INIS)

Sun, Y. T.; Omanakuttan, G.; Lourdudoss, S.

2015-01-01

An n-InP/p-Si heterojunction photodiode fabricated by corrugated epitaxial lateral overgrowth (CELOG) method is presented. N-InP/p-Si heterojunction has been achieved from a suitable pattern containing circular shaped openings in a triangular lattice on the InP seed layer on p-Si substrate and subsequent CELOG of completely coalesced n-InP. To avoid current path through the seed layer in the final photodiode, semi-insulating InP:Fe was grown with adequate thickness prior to n-InP growth in a low pressure hydride vapor phase epitaxy reactor. The n-InP/p-Si heterointerface was analyzed by scanning electron microscopy and Raman spectroscopy. Room temperature cross-sectional photoluminescence (PL) mapping illustrates the defect reduction effect in InP grown on Si by CELOG method. The InP PL intensity measured above the InP/Si heterojunction is comparable to that of InP grown on a native planar substrate indicating low interface defect density of CELOG InP despite of 8% lattice mismatch with Si. The processed n-InP/p-Si heterojunction photodiodes show diode characteristics from the current-voltage (I-V) measurements with a dark current density of 0.324 mA/cm 2 at a reverse voltage of −1 V. Under the illumination of AM1.5 conditions, the InP/Si heterojunction photodiode exhibited photovoltaic effect with an open circuit voltage of 180 mV, a short circuit current density of 1.89 mA/cm 2 , an external quantum efficiency of 4.3%, and an internal quantum efficiency of 6.4%. This demonstration of epitaxially grown InP/Si heterojunction photodiode will open the door for low cost and high efficiency solar cells and photonic integration of III-Vs on silicon

The photovoltaic impact of atomic layer deposited TiO2 interfacial layer on Si-based photodiodes

Science.gov (United States)

Karabulut, Abdulkerim; Orak, İkram; Türüt, Abdulmecit

2018-06-01

In present work, photocurrent, current-voltage (I-V) and capacitance/conductance-voltage-frequency (C/G-V-f) measurements were analyzed for the photodiode and diode parameters of Al/TiO2/p-Si structure. The TiO2 thin film structure was deposited on p-Si by using atomic layer deposition technique (ALD) and its thickness was about 10 nm. The surface morphology of TiO2 coated on p-Si structure was observed via atomic force microscope (AFM). Barrier height (Φb) and ideality factor (n) values of device were found to be 0.80 eV, 0.70 eV, 0.56 eV and 1.04, 2.24, 10.27 under dark, 10 and 100 mW/cm2, respectively. Some photodiodes parameters such as fill factor (FF), power efficiency (%η), open circuit voltage (Voc), short circuit current (Isc) were obtained from I-V measurement under different light intensity. FF and η were accounted 49.2, 39,0 and 0.05, 0.45 under 10 and 100 mW/cm2 light power intensity, respectively. C-2-V graph was plotted from C-V-f measurements and zero bias voltage (V0), donor concentration (Nd), Fermi energy (EF), barrier height (Φb) and maximum electric field (Em) were determined from C-2-V data for different frequencies. The electrical and photocurrent values demonstrated that it can be used for photodiode, photo detector and photo sensing applications.