Ion bombardment modification of surfaces

International Nuclear Information System (INIS)

Auciello, O.

1984-01-01

An historical overview of the main advances in the understanding of bombardment-induced surface topography is presented. The implantation and sputtering mechanisms which are relevant to ion bombardment modification of surfaces and consequent structural, electronic and compositional changes are described. Descriptions of plasma and ion-beam sputtering-induced film formation, primary ion-beam deposition, dual beam techniques, cluster of molecule ion-beam deposition, and modification of thin film properties by ion bombardment during deposition are presented. A detailed account is given of the analytical and computational modelling of topography from the viewpoint of first erosion theory. Finally, an account of the possible application and/or importance of textured surfaces in technologies and/or experimental techniques not considered in previous chapters is presented. refs.; figs.; tabs

Influence of ion bombardment on structural and electrical properties of SiO2 thin films deposited from O2/HMDSO inductively coupled plasmas under continuous wave and pulsed modes

International Nuclear Information System (INIS)

Bousquet, A.; Goullet, A.; Leteinturier, C.; Granier, A.; Coulon, N.

2008-01-01

Low pressure Plasma Enhanced Chemical Vapour Deposition is commonly used to deposit insulators on temperature sensitive substrates. In these processes, the ion bombardment experienced by films during its growth is known to have benefits but also some disadvantages on material properties. In the present paper, we investigate the influence of this bombardment on the structure and the electrical properties of SiO 2 -like film deposited from oxygen/hexa-methyl-di-siloxane radiofrequency plasma in continuous and pulsed modes. First, we studied the ion kinetics thanks to time-resolved measurements by Langmuir probe. After, we showed the ion bombardment in such plasma controls the OH bond content in deposited films. Finally, we highlight the impressive reduction of fixed charge and interface state densities in films obtained in pulsed mode due to a lower ion bombardment. (authors)

Adhesion of silver films to ion-bombarded alumina

International Nuclear Information System (INIS)

Erck, R.A.; Fenske, G.R.

1990-01-01

This paper reports on silver films deposited on alumina substrates using ion bombardment. Adhesion strength was measured as a function of deposition conditions, sputter-cleaning time, and bombarding ion species, using a pull-type adhesion tester. Argon- and argon/oxygen-ion sputtering produced large increases in adhesion strength, with the greatest increases occurring for oxygen-ion bombardment. Adhesion strength increased monotonically as a function of ion sputtering time. At a given deposition rate, further enhancement of adhesion is seen with concurrent ion bombardment

A model for the build-up of disordered material in ion bombarded Si

International Nuclear Information System (INIS)

Nelson, R.S.

1977-01-01

A new model based on experimental observation is developed for the build-up of disordered material in ion bombarded silicon. The model assumes that disordered zones are created in a background of migrating point defects, these zones then act as neutral sinks for such defects which interact with the zones and cause recrystallization. A simple steady state rate theory is developed to describe the build-up of disordered material with ion dose as a function of temperature. In general the theory predicts two distinct behaviour patterns depending on the temperature and the ion mass, namely a linear build-up with dose to complete disorder for heavy bombarding ions and a build-up to saturation at a relatively low level for light ions such as protons. However, in some special circumstances a transition region is predicted where the build-up of disorder approximately follows a (dose)sup(1/2) relationship before reverting to a linear behaviour at high dose. (author)

Statistical characterization of surface defects created by Ar ion bombardment of crystalline silicon

International Nuclear Information System (INIS)

Ghazisaeidi, M.; Freund, J. B.; Johnson, H. T.

2008-01-01

Ion bombardment of crystalline silicon targets induces pattern formation by the creation of mobile surface species that participate in forming nanometer-scale structures. The formation of these mobile species on a Si(001) surface, caused by sub-keV argon ion bombardment, is investigated through molecular dynamics simulation of Stillinger-Weber [Phys. Rev. B 31, 5262 (1985)] silicon. Specific criteria for identifying and classifying these mobile atoms based on their energy and coordination number are developed. The mobile species are categorized based on these criteria and their average concentrations are calculated

Low-energy ion bombardment to tailor the interfacial and mechanical properties of polycrystalline 3C-silicon carbide

International Nuclear Information System (INIS)

Liu Fang; Li, Carolina H.; Pisano, Albert P.; Carraro, Carlo; Maboudian, Roya

2010-01-01

Low-energy Ar + ion bombardment of polycrystalline 3C-silicon carbide (poly-SiC) films is found to be a promising surface modification method to tailor the mechanical and interfacial properties of poly-SiC. The film average stress decreases as the ion energy and the bombardment time increase. Furthermore, this treatment is found to change the strain gradient of the films from positive to negative values. The observed changes in stress and strain gradient are explained by ion peening and thermal spikes models. In addition, the poly-SiC films show a significant enhancement in corrosion resistance by this treatment, which is attributed to a reduction in surface energy and to an increase in the compressive stress in the near-surface region.

Surface roughening under ion bombardment

International Nuclear Information System (INIS)

Bhatia, C.S.

1982-01-01

Ion bombardment can cause roughening of a surface. Inadequate step coverage and poor adhesion of films on such surfaces are of concern. An extreme case of surface roughening results in cone formation under ion bombardment. The results of the investigation, using scanning electron microscopy, is discussed in terms of the role of (a) embedded particles, (b) impurities and (c) surface migration in cone formation on the target surface. (Auth.)

Enhancement of optical absorption of Si (100) surfaces by low energy N+ ion beam irradiation

Science.gov (United States)

Bhowmik, Dipak; Karmakar, Prasanta

2018-05-01

The increase of optical absorption efficiency of Si (100) surface by 7 keV and 8 keV N+ ions bombardment has been reported here. A periodic ripple pattern on surface has been observed as well as silicon nitride is formed at the ion impact zones by these low energy N+ ion bombardment [P. Karmakar et al., J. Appl. Phys. 120, 025301 (2016)]. The light absorption efficiency increases due to the presence of silicon nitride compound as well as surface nanopatterns. The Atomic Force Microscopy (AFM) study shows the formation of periodic ripple pattern and increase of surface roughness with N+ ion energy. The enhancement of optical absorption by the ion bombarded Si, compared to the bare Si have been measured by UV - visible spectrophotometer.

The interpretation of ellipsometric measurements of ion bombardment of noble gases on semiconductor surfaces

NARCIS (Netherlands)

Holtslag, A.H.M.; Slager, U.C.; van Silfhout, Arend

1985-01-01

Low energy noble gas ion bombardment and thermal desorption studies were carried out on Si(111) and analysed, in situ, using spectroscopic ellipsometry. The amorphous layer thickness and implanted noble gas fraction were calculated.

Modification of thin film properties by ion bombardment during deposition

International Nuclear Information System (INIS)

Harper, J.M.E.; Cuomo, J.J.; Gambino, R.J.; Kaufman, H.R.

1984-01-01

Many thin film deposition techniques involve some form of energetic particle bombardment of the growing film. The degree of bombardment greatly influences the film composition, structure and other properties. While in some techniques the degree of bombardment is secondary to the original process design, in recent years more deposition systems are being designed with the capability for controlled ion bombardment of thin films during deposition. The highest degree of control is obtained with ion beam sources which operate independently of the vapor source providing the thin film material. Other plasma techniques offer varying degrees of control of energetic particle bombardment. Deposition methods involving ion bombardment are described, and the basic processes with which film properties are modified by ion bombardment are summarized. (Auth.)

Using MDECR-PECVD to study the impact of ion bombardment energy on microstructural properties of μc-Si:H thin film grown from an SiF{sub 4}/H{sub 2} chemistry

Energy Technology Data Exchange (ETDEWEB)

Wang, Junkang; Florea, Ileana; Bulkin, Pavel V.; Maurice, Jean-Luc; Johnson, Erik V. [LPICM, CNRS, Ecole Polytechnique, Universite Paris Saclay, 91128 Palaiseau (France)

2016-12-15

The matrix-distributed electron cyclotron resonance plasma-enhanced chemical vapor deposition (MDECR-PECVD) technique has been shown to achieve high deposition rates for hydrogenated microcrystalline silicon (μc-Si:H) thin film. Due to the fact that plasma is sustained by a microwave discharge, by biasing the substrate holder with additional power supply, one can achieve independent control over the plasma density and the maximum ion bombardment energy (IBE). In this work, we present studies of the impact of IBE on the microstructural properties of the μc-Si:H film deposited by MDECR-PECVD. Insufficient ion bombardment is found to be responsible for the substantial presence of nano-porous regions within the material, resulting in significant post-deposition oxidation. Good agreement between transmission electron microscopy (TEM) Fresnel contrast analysis and the results of infrared absorption and hydrogen effusion measurements for the deposited films suggest that moderate IBE is of vital importance to achieve high quality μc-Si:H. In doing so, denser films with significantly decreased nano-porous regions and better stability are obtained, which is of great interest to optimize the process parameters for solar cell applications. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Cleaning of diffusion bonding surface by argon ion bombardment treatment

International Nuclear Information System (INIS)

Wang, Airu; Ohashi, Osamu; Yamaguchi, Norio; Aoki, Masanori; Higashi, Yasuo; Hitomi, Nobuteru

2003-01-01

The specimens of oxygen-free high conductivity copper, SUS304L stainless steel and pure iron were treated by argon ion bombardment and then were bonded by diffusion bonding method. The effects of argon ion bombardment treatment on faying surface morphology, tensile strength of bonding joints and inclusions at the fracture surface were investigated. The results showed that argon ion bombardment treatment was effective to remove the oxide film and contamination at the faying surface and improve the quality of joints. The tensile strength of the bonded joints was improved, and minimum bonding temperature to make the metallic bonding at the interface was lowered by argon ion bombardment treatment. At the joints with argon ion bombardment treatment, ductile fractured surface was seen and the amount of inclusions was obviously decreased

Investigation of energy thresholds of atomic and cluster sputtering of some elements under ion bombardment

CERN Document Server

Atabaev, B G; Lifanova, L F

2002-01-01

Threshold energies of sputtering of negative cluster ions from the Si(111) surface were measured at bombardment by Cs sup + , Rb sup + , and Na sup + ions with energy of 0.1-3.0 keV. These results are compared with the calculations of the similar thresholds by Bohdansky etc. formulas (3) for clusters Si sub n sup - and Cu sub n sup - with n=(1-5) and also for B, C, Al, Si, Fe, Cu atoms. Threshold energies of sputtering for the above elements were also estimated using the data from (5). Satisfactory agreement between the experimental and theoretical results was obtained. (author)

Doubly versus singly positively charged oxygen ions back-scattered from a silicon surface under dynamic O2+ bombardment

International Nuclear Information System (INIS)

Franzreb, Klaus; Williams, Peter; Loerincik, Jan; Sroubek, Zdenek

2003-01-01

Mass-resolved (and emission-charge-state-resolved) low-energy ion back-scattering during dynamic O 2 + bombardment of a silicon surface was applied in a Cameca IMS-3f secondary ion mass spectrometry (SIMS) instrument to determine the bombarding energy dependence of the ratio of back-scattered O 2+ versus O + . While the ratio of O 2+ versus O + drops significantly at reduced bombarding energies, O 2+ back-scattered from silicon was still detectable at an impact energy (in the lab frame) as low as about 1.6 keV per oxygen atom. Assuming neutralization prior to impact, O 2+ ion formation in an asymmetric 16 O→ 28 Si collision is expected to take place via 'collisional double ionization' (i.e. by promotion of two outer O 2p electrons) rather than by the production of an inner-shell (O 2s or O 1s) core hole followed by Auger-type de-excitation during or after ejection. A molecular orbital (MO) correlation diagram calculated for a binary 'head-on' O-Si collision supports this interpretation

Modification of thin film properties by ion bombardment during deposition

International Nuclear Information System (INIS)

Harper, J.M.E.; Cuomo, J.J.; Gambino, R.J.; Kaufman, H.R.

1984-01-01

Deposition methods involving ion bombardment are described, and the basic processes with which film properties are modified by ion bombardment are summarized. Examples of thin film property modification by ion bombardment during deposition, including effects which are primarily compositional as well as those which are primarily structural are presented. The examples demonstrate the usefulness of ion beam techniques in identifying and controlling the fundamental deposition parameters. 68 refs.; 15 figs.; 1 table

Silicide formation by Ar/sup +/ ion bombardment of Pd/Si

Energy Technology Data Exchange (ETDEWEB)

Lee, R Y; Whang, C N; Kim, H K; Smith, R J

1988-08-01

Palladium films, 45 nm thick, evaporated on to Si(111) were irradiated to various doses with 78 keV Ar/sup +/ ions to promote silicide formation. Rutherford backscattering spectroscopy (RBS) shows that intermixing has occurred across the Pd/Si interface at room temperature. The mixing behaviour is increased with dose which coincides well with the theoretical model of cascade mixing. The absence of deep RBS tails for palladium and the small area of this for silicon spectra indicate that short-range mixing occurs. From the calculated damage profiles computed with TRIM code, the dominant diffusion species is found to be silicon atoms in the Pd/Si system. It is also found that the initial compound formed by Ar/sup +/ irradiation is Pd/sub 2/Si which increases with dose. At a dose of 1 x 10/sup 16/ Ar/sup +/ cm/sup -2/, a 48 nm thickness of Pd/sub 2/Si was formed by ion-beam mixing at room temperature.

Ion bombardment modification of surfaces

International Nuclear Information System (INIS)

Auciello, O.

1984-01-01

Ion bombardment-induced modification of surfaces may be considered one of the significant scientific and technological developments of the last two decades. The understanding acquired concerning the underlying mechanisms of several phenomena occurring during ion-surface interactions has led to applications within different modern technologies. These include microelectronics, surface acoustical and optical technologies, solar energy conversion, thin film technology, ion implantation metallurgy, nuclear track technology, thermonuclear fusion, vacuum technology, cold welding technology, biomedicine (implantology). It has become clear that information on many relevant advances, regarding ion bombardment modification of surfaces is dispersed among journals involving fields sometimes not clearly related. This may result, in some cases, in a loss of the type of interdisciplinary exchange of ideas, which has proved to be so fruitful for the advancement of science and technology. This book has been planned in an attempt to collect at least some of today's relevant information about the experimental and theoretical knowledge related to surface modification and its application to technology. (Auth.)

Adhesion of evaporated titanium films to ion-bombarded polyethylene

International Nuclear Information System (INIS)

Bodoe, P.; Sundgren, J.

1986-01-01

Ti films were deposited onto high-density polyethylene (HDPE) samples by electron-beam evaporation. Prior to film deposition the samples were in situ pretreated by Ar ion bombardment using a sputter ion gun. The adhesion of the films, determined as the pull strength required for film failure, was measured as a function of ion dose. HDPE substrates processed at two different temperatures were examined. The adhesion of the Ti films to HDPE samples processed at roughly-equal150 0 C increased with the ion dose to a steady-state value corresponding to the cohesive strength of the HDPE substrate. The adhesion to the samples processed at roughly-equal200 0 C increased to a maximum and then decreased for further ion bombardment to a level of the same order as that for films deposited onto as-prepared samples. The effects of the ion bombardment upon the HDPE surface chemistry were examined by means of x-ray photoelectron spectroscopy (XPS). The ion bombardment resulted in dehydrogenation and cross linking of the surface region and for prolonged ion bombardment, a graphitelike surface was obtained. The film/substrate interface as well as the initial Ti film growth were examined by XPS analysis. A chemical interaction which resulted in Ti--C bonds was observed at the interface. The Ti film growth followed a pronounced three-dimensional growth mode on as-prepared surfaces whereas the ion bombardment resulted in a change toward a more two-dimensional growth mode. The difference in adhesion behavior for the two types of HDPE substrates was found to be due to a difference in the amounts of low molecular weight products present within the substrates

Characterization techniques for ion bombarded insulators

International Nuclear Information System (INIS)

Borders, J.A.

1987-01-01

The chapter gives a comprehensive review of the experimental methods for the analysis of ion-bombarded insulators including optical and structural methods, resonance, energetic ion methods, and surface techniques. 48 refs.; 34 figs

Ion beam mixing to produce disordered AlSi superconducting alloys

International Nuclear Information System (INIS)

Xi Xiaoxing; Ran Qize; Liu Jiarui; Guan Weiyan

1987-01-01

Multilayered Al/Si films were bombarded with Ar ions at LHe temperature and superconducting transition temperature Tsub(c) was measured in situ. The highest Tsub(c) thus obtained was 7.53 K. The systematic studies on samples with different compositions suggest that ion induced disorder might be the main reason for Tsub(c) enhancement in these AlSi alloys. (author)

Low temperature magnetron sputter deposition of polycrystalline silicon thin films using high flux ion bombardment

International Nuclear Information System (INIS)

Gerbi, Jennifer E.; Abelson, John R.

2007-01-01

We demonstrate that the microstructure of polycrystalline silicon thin films depends strongly on the flux of low energy ions that bombard the growth surface during magnetron sputter deposition. The deposition system is equipped with external electromagnetic coils which, through the unbalanced magnetron effect, provide direct control of the ion flux independent of the ion energy. We report the influence of low energy ( + on the low temperature ( + ions to silicon neutrals (J + /J 0 ) during growth by an order of magnitude (from 3 to 30) enables the direct nucleation of polycrystalline Si on glass and SiO 2 coated Si at temperatures below 400 degree sign C. We discuss possible mechanisms for this enhancement of crystalline microstructure, including the roles of enhanced adatom mobility and the formation of shallow, mobile defects

An ion beam deceleration lens for ultra-low-energy ion bombardment of naked DNA

Energy Technology Data Exchange (ETDEWEB)

Thopan, P.; Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuldyuld@gmail.com [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2013-07-15

Highlights: ► An ion beam deceleration lens was designed and constructed. ► The deceleration lens was installed and tested. ► The decelerated ion beam energy was measured using an electrical field. ► Decelerated ultra-low-energy ion beam bombarded naked DNA. ► Ion beam with energy of a few tens of eV could break DNA strands. -- Abstract: Study of low-energy ion bombardment effect on biological living materials is of significance. High-energy ion beam irradiation of biological materials such as organs and cells has no doubt biological effects. However, ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range. To investigate effects from very-low-energy ion bombardment on biological materials, an ion beam deceleration lens is necessary for uniform ion energy lower than keV. A deceleration lens was designed and constructed based on study of the beam optics using the SIMION program. The lens consisted of six electrodes, able to focus and decelerate primary ion beam, with the last one being a long tube to obtain a parallel uniform exiting beam. The deceleration lens was installed to our 30-kV bioengineering-specialized ion beam line. The final decelerated-ion energy was measured using a simple electrostatic field to bend the beam to range from 10 eV to 1 keV controlled by the lens parameters and the primary beam condition. In a preliminary test, nitrogen ion beam at 60 eV decelerated from a primary 20-keV beam bombarded naked plasmid DNA. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks. The study demonstrated that the ion bombardment with energy as low as several-tens eV was possible to break DNA strands and thus potential to cause genetic modification of biological cells.

An ion beam deceleration lens for ultra-low-energy ion bombardment of naked DNA

International Nuclear Information System (INIS)

Thopan, P.; Prakrajang, K.; Thongkumkoon, P.; Suwannakachorn, D.; Yu, L.D.

2013-01-01

Highlights: ► An ion beam deceleration lens was designed and constructed. ► The deceleration lens was installed and tested. ► The decelerated ion beam energy was measured using an electrical field. ► Decelerated ultra-low-energy ion beam bombarded naked DNA. ► Ion beam with energy of a few tens of eV could break DNA strands. -- Abstract: Study of low-energy ion bombardment effect on biological living materials is of significance. High-energy ion beam irradiation of biological materials such as organs and cells has no doubt biological effects. However, ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range. To investigate effects from very-low-energy ion bombardment on biological materials, an ion beam deceleration lens is necessary for uniform ion energy lower than keV. A deceleration lens was designed and constructed based on study of the beam optics using the SIMION program. The lens consisted of six electrodes, able to focus and decelerate primary ion beam, with the last one being a long tube to obtain a parallel uniform exiting beam. The deceleration lens was installed to our 30-kV bioengineering-specialized ion beam line. The final decelerated-ion energy was measured using a simple electrostatic field to bend the beam to range from 10 eV to 1 keV controlled by the lens parameters and the primary beam condition. In a preliminary test, nitrogen ion beam at 60 eV decelerated from a primary 20-keV beam bombarded naked plasmid DNA. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks. The study demonstrated that the ion bombardment with energy as low as several-tens eV was possible to break DNA strands and thus potential to cause genetic modification of biological cells

MeV Si ion modifications on the thermoelectric generators from Si/Si + Ge superlattice nano-layered films

Science.gov (United States)

Budak, S.; Heidary, K.; Johnson, R. B.; Colon, T.; Muntele, C.; Ila, D.

2014-08-01

The performance of thermoelectric materials and devices is characterized by a dimensionless figure of merit, ZT = S2σT/K, where, S and σ denote, respectively, the Seebeck coefficient and electrical conductivity, T is the absolute temperature in Kelvin and K represents the thermal conductivity. The figure of merit may be improved by means of raising either S or σ or by lowering K. In our laboratory, we have fabricated and characterized the performance of a large variety of thermoelectric generators (TEG). Two TEG groups comprised of 50 and 100 alternating layers of Si/Si + Ge multi-nanolayered superlattice films have been fabricated and thoroughly characterized. Ion beam assisted deposition (IBAD) was utilized to assemble the alternating sandwiched layers, resulting in total thickness of 300 nm and 317 nm for 50 and 100 layer devices, respectively. Rutherford Backscattering Spectroscopy (RBS) was employed in order to monitor the precise quantity of Si and Ge utilized in the construction of specific multilayer thin films. The material layers were subsequently impregnated with quantum dots and/or quantum clusters, in order to concurrently reduce the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and raise the cross plane electrical conductivity. The quantum dots/clusters were implanted via the 5 MeV Si ion bombardment which was performed using a Pelletron high energy ion beam accelerator. We have achieved remarkable results for the thermoelectric and optical properties of the Si/Si + Ge multilayer thin film TEG systems. We have demonstrated that with optimal setting of the 5 MeV Si ion beam bombardment fluences, one can fabricate TEG systems with figures of merits substantially higher than the values previously reported.

MeV Si ion modifications on the thermoelectric generators from Si/Si + Ge superlattice nano-layered films

Energy Technology Data Exchange (ETDEWEB)

Budak, S., E-mail: satilmis.budak@aamu.edu [Department of Electrical Engineering and Computer Science, Alabama A and M University, Huntsville, AL (United States); Heidary, K. [Department of Electrical Engineering and Computer Science, Alabama A and M University, Huntsville, AL (United States); Johnson, R.B.; Colon, T. [Department of Physics, Alabama A and M University, Huntsville, AL (United States); Muntele, C. [Cygnus Scientific Services, Huntsville, AL (United States); Ila, D. [Department of Physics, Fayetteville St. University, Fayetteville, NC (United States)

2014-08-15

The performance of thermoelectric materials and devices is characterized by a dimensionless figure of merit, ZT = S{sup 2}σT/K, where, S and σ denote, respectively, the Seebeck coefficient and electrical conductivity, T is the absolute temperature in Kelvin and K represents the thermal conductivity. The figure of merit may be improved by means of raising either S or σ or by lowering K. In our laboratory, we have fabricated and characterized the performance of a large variety of thermoelectric generators (TEG). Two TEG groups comprised of 50 and 100 alternating layers of Si/Si + Ge multi-nanolayered superlattice films have been fabricated and thoroughly characterized. Ion beam assisted deposition (IBAD) was utilized to assemble the alternating sandwiched layers, resulting in total thickness of 300 nm and 317 nm for 50 and 100 layer devices, respectively. Rutherford Backscattering Spectroscopy (RBS) was employed in order to monitor the precise quantity of Si and Ge utilized in the construction of specific multilayer thin films. The material layers were subsequently impregnated with quantum dots and/or quantum clusters, in order to concurrently reduce the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and raise the cross plane electrical conductivity. The quantum dots/clusters were implanted via the 5 MeV Si ion bombardment which was performed using a Pelletron high energy ion beam accelerator. We have achieved remarkable results for the thermoelectric and optical properties of the Si/Si + Ge multilayer thin film TEG systems. We have demonstrated that with optimal setting of the 5 MeV Si ion beam bombardment fluences, one can fabricate TEG systems with figures of merits substantially higher than the values previously reported.

Catalytic oxidation of silicon by cesium ion bombardment

International Nuclear Information System (INIS)

Souzis, A.E.; Huang, H.; Carr, W.E.; Seidl, M.

1991-01-01

Results for room-temperature oxidation of silicon using cesium ion bombardment and low oxygen exposure are presented. Bombardment with cesium ions is shown to allow oxidation at O 2 pressures orders of magnitude smaller than with noble gas ion bombardment. Oxide layers of up to 30 A in thickness are grown with beam energies ranging from 20--2000 eV, O 2 pressures from 10 -9 to 10 -6 Torr, and total O 2 exposures of 10 0 to 10 4 L. Results are shown to be consistent with models indicating that initial oxidation of silicon is via dissociative chemisorption of O 2 , and that the low work function of the cesium- and oxygen-coated silicon plays the primary role in promoting the oxidation process

Silicon nanodot formation and self-ordering under bombardment with heavy Bi3 ions

International Nuclear Information System (INIS)

Boettger, Roman; Heinig, Karl-Heinz; Bischoff, Lothar; Liedke, Bartosz; Huebner, Rene; Pilz, Wolfgang

2013-01-01

Si nanodots of high density and hexagonal short-range order are observed upon normal-incidence bombardment of hot, crystalline Si with Bi 3 + ions having a kinetic energy of a few tens of keV. The heights of nanodots are comparable to their widths of ∝20 nm. The implanted Bi accumulates in tiny Bi nanocrystals in a thin Si top layer which is amorphous due to implantation damage. Light and heavy ions up to Xe cause smoothing of surfaces, but Bi 3 + ions considered here have a much higher mass. Atomistic simulations prove that each Bi 3 + impact deposits an extremely high energy density resulting in a several nanometer large melt pool, which resolidifies within a few hundreds of picoseconds. Experiments confirm that dot patterns form only if the deposited energy density exceeds the threshold for melting. Comparing monatomic and polyatomic Bi ion irradiation, Bi-Si phase separation and preferential ion erosion are ruled out as driving forces of pattern formation. A model based on capillary forces in the melt pool explains the pattern formation consistently. High-density Si nanodots are formed by polyatomic Bi ion irradiation of hot Si surfaces. Each impact causes local transient melt pools smaller than the dots. Hexagonally ordered patterns evolve by self-organization driven by repeated ion-induced melting of tiny volumes. Homogeneously distributed Bi nanocrystals are found in the a-Si film. These nanocrystals are related to particularities of the Si-Bi phase diagram. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Emission of positive oxygen ions from ion bombardment of adsorbate-covered metal surfaces

International Nuclear Information System (INIS)

Kaurin, M.G.

1989-01-01

During ion bombardment of metal surfaces, collision cascades can result in the emission of sputtered secondary ions. Recent experiments, however, have suggested that the emission of positive ions of electronegative adsorbates can result from electronic processes rather than from processes involving elastic collisions. This dissertation presents the results of experiments studying the emission of positive oxygen ions from oxygen- and carbon-monoxide-covered transition metal surfaces during bombardment by 25-250 keV ions of neon, argon, and krypton. The systems studied may be grouped into four categories. For a nickel substrate with adsorbed oxygen, the emission of positive oxygen ions proceeds through collision cascades. For titanium and niobium with adsorbed oxygen, the emission of positive oxygen ions is proportional to the primary ion velocity, consistent with emission from electronic processes; for a given primary ion velocity, the oxygen ion yield is independent of primary ion species. For substrates of molybdenum and tungsten, the oxygen yield is proportional to primary ion velocity, but the yield also depends on the primary ion species for a given primary ion velocity in a manner that is consistent with emission resulting from electronic processes. For these two groups, except for titanium, the yields during neon ion bombardment do not extrapolate (assuming linearity with primary ion velocity) to a nonzero value at zero beam velocity. The magnitude of the oxygen ion yields from these targets is not consistent with that expected if the emission were induced by secondary electrons emitted during the ion bombardment

Modification of Polymer Materials by Ion Bombardment: Case Studies

International Nuclear Information System (INIS)

Bielinski, D. M.; Jagielski, J.; Lipinski, P.; Pieczynska, D.; Ostaszewska, U.; Piatkowska, A.

2009-01-01

The paper discusses possibility of application of ion beam bombardment for modification of polymers. Changes to composition, structure and morphology of the surface layer produced by the treatment and their influence on engineering and functional properties of wide range of polymer materials are presented. Special attention has been devoted to modification of tribological properties. Ion bombardment results in significant reduction of friction, which can be explained by increase of hardness and wettability of polymer materials. Hard but thin enough skin does not result in cracking but improves their abrasion resistance. Contrary to conventional chemical treatment ion beam bombardment works even for polymers hardly susceptible to modification like silicone rubber or polyolefines.

Facies of ion bombarded surfaces of brittle materials

International Nuclear Information System (INIS)

Primak, W.

1975-12-01

Materials were bombarded by protons, deuterons, and helium ions. The materials investigated were quartz; glasses; carbides and borides (SiC, B 4 C, TiB 2 ); oxides and nitrides (magnorite, sapphire, spinel, Al 2 O 3 , Si 3 N 4 , ZrO 2 , BaTiO 3 ); and miscellaneous (graphite, LiNbO 3 , copper). Oberservations were of growth, reflectivity, blistering, surface ablation, and swelling. Calculations were made of the effects of a layer, of its gradual transformation, and of the introduction of a gas. It is concluded that: Radiation blistering is not a primary process. Observations of blister formation and exfoliation cannot be used to calculate the surface ablation rate. The primary process is the development of a microporous layer which causes swelling. Visible blisters are caused by fracturing by transverse stresses in this layer and may occur during the bombardment, or in some cases, much later, in storage. There is no evidence of extreme gas pressures in the blisters. When blisters develop, they may be stable under continued bombardment for a dose many times that at which they formed. The swelling is a better index of the effects than is the blistering, and must be associated in most cases with permeability to the gas. Behavior with protons and deuterons is similar, with helium different. All but quartz, vitreous silica, and Pyrex are impervious to hydrogen and deuterium; only dense barium crown glass, carbides, borides, oxides, and nitrides are impervious to helium. Quartz shows swelling caused by conversion to a vitreous product of much lower density but no porosity, while for the others, most of the swelling and surface growth is caused by porosity. Surface ablation by the blistering process may be reduced by initial porosity or by initial or subsequent surface fissuring. However, for impervious materials, surface damage by the introduction of porosity would continue

Ultra-low-energy (<10 eV/u) ion beam bombardment effect on naked DNA

Energy Technology Data Exchange (ETDEWEB)

Thopan, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D., E-mail: yuld@thep-center.org [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2014-05-01

Highlights: • Decelerated ultra-low energy ion beam bombarded naked DNA. • DNA form change induced by ion bombardment was investigated. • N-ion bombardment at 32 eV induced DNA single and double strand breaks. • Ar-ion bombardment at a-few-hundreds eV induced DNA single strand break. - Abstract: Since ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range, it is very interesting to know effects from ultra-low-energy ion interaction with DNA for understanding ion-beam-induced genetic mutation. Tens-keV Ar- and N-ion beams were decelerated to ultra-low energy ranging from 20 to 100 eV, or only a few to 10 eV/u, to bombard naked plasmid DNA. The bombarded DNA was analyzed using gel electrophoresis for DNA form changes. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks after bombarded by tens-eV ion beam. N-ion beam was found more effective in inducing DNA change and mutation than Ar-ion beam. The study demonstrated that the ion bombardment with energy as low as several-tens eV was able to break DNA strands and thus potentially to cause genetic modification of biological cells. The experimental results were discussed in terms of direct atomic collision between the ions and DNA atoms.

Ultra-low-energy (<10 eV/u) ion beam bombardment effect on naked DNA

International Nuclear Information System (INIS)

Thopan, P.; Thongkumkoon, P.; Prakrajang, K.; Suwannakachorn, D.; Yu, L.D.

2014-01-01

Highlights: • Decelerated ultra-low energy ion beam bombarded naked DNA. • DNA form change induced by ion bombardment was investigated. • N-ion bombardment at 32 eV induced DNA single and double strand breaks. • Ar-ion bombardment at a-few-hundreds eV induced DNA single strand break. - Abstract: Since ion energy deposition in the ion-bombarded materials dominantly occurs in the low-energy range, it is very interesting to know effects from ultra-low-energy ion interaction with DNA for understanding ion-beam-induced genetic mutation. Tens-keV Ar- and N-ion beams were decelerated to ultra-low energy ranging from 20 to 100 eV, or only a few to 10 eV/u, to bombard naked plasmid DNA. The bombarded DNA was analyzed using gel electrophoresis for DNA form changes. The original DNA supercoiled form was found to change to relaxed and linear forms, indicating single or double strand breaks after bombarded by tens-eV ion beam. N-ion beam was found more effective in inducing DNA change and mutation than Ar-ion beam. The study demonstrated that the ion bombardment with energy as low as several-tens eV was able to break DNA strands and thus potentially to cause genetic modification of biological cells. The experimental results were discussed in terms of direct atomic collision between the ions and DNA atoms

Direct and Recoil-Induced Electron Emission from Ion-Bombarded Solids

DEFF Research Database (Denmark)

Holmen, G.; Svensson, B.; Schou, Jørgen

1979-01-01

The kinetic emission of secondary electrons from ion-bombarded solid surfaces is split into two contributions, a direct one caused by ionizing collisions between the bombarding ion and target atoms, and an indirect one originating from ionizing collisions undergone by recoil atoms with other target...... atoms. The direct contribution, which has been treated by several authors in previous studies, shows a behavior that is determined primarily by the electronic stopping power of the bombarding ion, while the indirect contribution is nonproportionally related to the nuclear stopping power. This latter...

Very low-energy and low-fluence ion beam bombardment of naked plasmid DNA

International Nuclear Information System (INIS)

Norarat, R.; Semsang, N.; Anuntalabhochai, S.; Yu, L.D.

2009-01-01

Ion beam bombardment of biological organisms has been recently applied to mutation breeding of both agricultural and horticultural plants. In order to explore relevant mechanisms, this study employed low-energy ion beams to bombard naked plasmid DNA. The study aimed at simulation of the final stage of the process of the ion beam bombardment of real cells to check whether and how very low-energy and low-fluence of ions can induce mutation. Argon and nitrogen ions at 5 keV and 2.5 keV respectively bombarded naked plasmid DNA pGFP to very low-fluences, an order of 10 13 ions/cm 2 . Subsequently, DNA states were analyzed using electrophoresis. Results provided evidences that the very low-energy and low-fluence ion bombardment indeed altered the DNA structure from supercoil to short linear fragments through multiple double strand breaks and thus induced mutation, which was confirmed by transfer of the bombarded DNA into bacteria Escherichia coli and subsequent expression of the marker gene.

Transfer-free synthesis of graphene-like atomically thin carbon films on SiC by ion beam mixing technique

Science.gov (United States)

Zhang, Rui; Chen, Fenghua; Wang, Jinbin; Fu, Dejun

2018-03-01

Here we demonstrate the synthesis of graphene directly on SiC substrates at 900 °C using ion beam mixing technique with energetic carbon cluster ions on Ni/SiC structures. The thickness of 7-8 nm Ni films was evaporated on the SiC substrates, followed by C cluster ion bombarding. Carbon cluster ions C4 were bombarded at 16 keV with the dosage of 4 × 1016 atoms/cm2. After thermal annealing process Ni silicides were formed, whereas C atoms either from the decomposition of the SiC substrates or the implanted contributes to the graphene synthesis by segregating and precipitating process. The limited solubility of carbon atoms in silicides, involving SiC, Ni2Si, Ni5Si2, Ni3Si, resulted in diffusion and precipitation of carbon atoms to form graphene on top of Ni and the interface of Ni/SiC. The ion beam mixing technique provides an attractive production method of a transfer-free graphene growth on SiC and be compatible with current device fabrication.

Induction of antioxidant enzyme activity and lipid peroxidation level in ion-beam-bombarded rice seeds

Energy Technology Data Exchange (ETDEWEB)

Semsang, Nuananong, E-mail: nsemsang@gmail.com [Molecular Biology Laboratory, Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, LiangDeng [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2013-07-15

Highlights: ► Ion beam bombarded rice seeds in vacuum. ► Studied seed survival from the ion bombardment. ► Determined various antioxidant enzyme activities and lipid peroxidation level. ► Discussed vacuum, ion species and ion energy effects. ► Attributed the changes to free radical formation due to ion bombardment. -- Abstract: Low-energy ion beam bombardment has been used to mutate a wide variety of plant species. To explore the indirect effects of low-energy ion beam on biological damage due to the free radical production in plant cells, the increase in antioxidant enzyme activities and lipid peroxidation level was investigated in ion-bombarded rice seeds. Local rice seeds were bombarded with nitrogen or argon ion beams at energies of 29–60 keV and ion fluences of 1 × 10{sup 16} ions cm{sup −2}. The activities of the antioxidant enzymes; superoxide dismutase (SOD), catalase (CAT), ascorbate peroxidase (APX), dehydroascorbate reductase (DHAR), glutathione reductase (GR), glutathione S-transferase (GST) and lipid peroxidation level were assayed in the germinated rice seeds after ion bombardment. The results showed most of the enzyme activities and lipid peroxidation levels in both the argon and nitrogen bombarded samples were higher than those in the natural control. N-ion bombardment could induce higher levels of antioxidant enzyme activities in the rice samples than the Ar-ion bombardment. Additional effects due to the vacuum condition were found to affect activities of some antioxidant enzymes and lipid peroxidation level. This study demonstrates that ion beam bombardment and vacuum condition could induce the antioxidant enzyme activity and lipid peroxidation level which might be due to free radical production in the bombarded rice seeds.

Anomalous time-of-flight distributions observed for argon implanted in silicon and resputtered by Ar+-ion bombardment

International Nuclear Information System (INIS)

van Veen, G.N.A.; Sanders, F.H.M.; Dieleman, J.; van Veen, A.; Oostra, D.J.; de Vries, A.E.

1986-01-01

A Si substrate is bombarded by 3-keV Ar + ions. From time-of-flight spectra of resputtered Ar neutrals at various target temperatures, we conclude that Ar-bubble formation takes place in the amorphized-Si top layer. The bubbles form and open during etching. The average kinetic energy of the Ar atoms is in agreement with the calculated average potential energy of the Ar atoms inside the bubbles

Ion bombardment and disorder in amorphous silicon

International Nuclear Information System (INIS)

Sidhu, L.S.; Gaspari, F.; Zukotynski, S.

1997-01-01

The effect of ion bombardment during growth on the structural and optical properties of amorphous silicon are presented. Two series of films were deposited under electrically grounded and positively biased substrate conditions. The biased samples displayed lower growth rates and increased hydrogen content relative to grounded counterparts. The film structure was examined using Raman spectroscopy. The transverse optic like phonon band position was used as a parameter to characterize network order. Biased samples displayed an increased order of the amorphous network relative to grounded samples. Furthermore, biased samples exhibited a larger optical gap. These results are correlated and attributed to reduced ion bombardment effects

Large area smoothing of surfaces by ion bombardment: fundamentals and applications

International Nuclear Information System (INIS)

Frost, F; Fechner, R; Ziberi, B; Voellner, J; Flamm, D; Schindler, A

2009-01-01

Ion beam erosion can be used as a process for achieving surface smoothing at microscopic length scales and for the preparation of ultrasmooth surfaces, as an alternative to nanostructuring of various surfaces via self-organization. This requires that in the evolution of the surface topography different relaxation mechanisms dominate over the roughening, and smoothing of initially rough surfaces can occur. This contribution focuses on the basic mechanisms as well as potential applications of surface smoothing using low energy ion beams. In the first part, the fundamentals for the smoothing of III/V semiconductors, Si and quartz glass surfaces using low energy ion beams (ion energy: ≤2000 eV) are reviewed using examples. The topography evolution of these surfaces with respect to different process parameters (ion energy, ion incidence angle, erosion time, sample rotation) has been investigated. On the basis of the time evolution of different roughness parameters, the relevant surface relaxation mechanisms responsible for surface smoothing are discussed. In this context, physical constraints as regards the effectiveness of surface smoothing by direct ion bombardment will also be addressed and furthermore ion beam assisted smoothing techniques are introduced. In the second application-orientated part, recent technological developments related to ion beam assisted smoothing of optically relevant surfaces are summarized. It will be demonstrated that smoothing by direct ion bombardment in combination with the use of sacrificial smoothing layers and the utilization of appropriate broad beam ion sources enables the polishing of various technologically important surfaces down to 0.1 nm root mean square roughness level, showing great promise for large area surface processing. Specific examples are given for ion beam smoothing of different optical surfaces, especially for substrates used for advanced optical applications (e.g., in x-ray optics and components for extreme

L-subshell ionization studies in Au and Bi for 19F and 28Si large-ion bombardment

International Nuclear Information System (INIS)

Padhi, H.C.; Dhal, B.B.; Nanal, V.; Prasad, K.G.; Tandon, P.N.; Trautmann, D.

1996-01-01

L x-ray production and subshell ionization cross sections of Au and Bi have been measured for the bombardment of 19 F and 28 Si ions in the energy range 30 endash 57 MeV and 36 endash 84 MeV, respectively. Comparison of the Lα x-ray production cross sections of Au with the earlier data by Malhi and Gray [Phys. Rev. A 44, 7199 (1991)] shows reasonable agreement for 19 F impact and their data are consistently higher for 28 Si at all energies. The measured Lα line energy shows a shift towards higher energy, which appears to be proportional to the square of the projectile atomic number at all impact energies. This shift suggests the presence of multiple ionization in the L and M shells with a simultaneous production of four M holes in Au at the impact energy of 3 MeVu -1 of 28 Si. The L-subshell ionization cross sections obtained from the measured x-ray production cross sections have been compared with the semiclassical approximation and perturbed stationary state theory with energy loss, Coulomb deflection, and relativistic correction for the electron motion calculations, which show large deviations for the L 1 subshell. The L 2 - and L 3 -subshell ionization cross sections are underestimated by both the theories by a factor of 1.2 endash 4.0 for 28 Si impact whereas for the 19 F case there is reasonable agreement for the L 3 cross section but the L 2 cross section is underestimated by 20 endash 30%. copyright 1996 The American Physical Society

InN: Fermi level stabilization by low-energy ion bombardment

International Nuclear Information System (INIS)

Piper, L.F.J.; Veal, T.D.; McConville, C.F.; Lu, H.; Schaff, W.J.

2006-01-01

The near-surface electronic properties of InN have been investigated with high-resolution electron-energy loss spectroscopy. Low-energy (∝400 eV) nitrogen ion bombardment followed by low temperature annealing (<300 C) was found to dramatically increase the n-type conductivity of InN, close to the surface. This is explained in terms of the formation of amphoteric defects from the ion bombardment and annealing combined with the band structure of InN. Low-energy ion bombardment and annealing is shown to result in a damage-induced, donor-like defect-profile instead of the expected electron accumulation for InN. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Induction of antioxidant enzyme activity and lipid peroxidation level in ion-beam-bombarded rice seeds

Science.gov (United States)

Semsang, Nuananong; Yu, LiangDeng

2013-07-01

Low-energy ion beam bombardment has been used to mutate a wide variety of plant species. To explore the indirect effects of low-energy ion beam on biological damage due to the free radical production in plant cells, the increase in antioxidant enzyme activities and lipid peroxidation level was investigated in ion-bombarded rice seeds. Local rice seeds were bombarded with nitrogen or argon ion beams at energies of 29-60 keV and ion fluences of 1 × 1016 ions cm-2. The activities of the antioxidant enzymes; superoxide dismutase (SOD), catalase (CAT), ascorbate peroxidase (APX), dehydroascorbate reductase (DHAR), glutathione reductase (GR), glutathione S-transferase (GST) and lipid peroxidation level were assayed in the germinated rice seeds after ion bombardment. The results showed most of the enzyme activities and lipid peroxidation levels in both the argon and nitrogen bombarded samples were higher than those in the natural control. N-ion bombardment could induce higher levels of antioxidant enzyme activities in the rice samples than the Ar-ion bombardment. Additional effects due to the vacuum condition were found to affect activities of some antioxidant enzymes and lipid peroxidation level. This study demonstrates that ion beam bombardment and vacuum condition could induce the antioxidant enzyme activity and lipid peroxidation level which might be due to free radical production in the bombarded rice seeds.

Mechanisms of ion-bombardment-induced DNA transfer into bacterial E. coli cells

Energy Technology Data Exchange (ETDEWEB)

Yu, L.D., E-mail: yuld@thep-center.org [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Sangwijit, K. [Molecular Biology Laboratory, Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Phanchaisri, B. [Institute of Science and Technology Research, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongkumkoon, P. [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thopan, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Singkarat, S. [Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Anuntalabhochai, S. [Molecular Biology Laboratory, Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

2014-05-01

Highlights: • Ion bombardment could induce DNA transfer into E. coli cells. • The DNA transfer induction depended on ion energy and fluence. • The mechanism was associated with the bacterial cell envelope structure. • A mechanism phase diagram was proposed to summarize the mechanism. - Abstract: As a useful ion beam biotechnology, ion-bombardment-induced DNA transfer into bacterial Escherichia coli (E. coli) cells has been successfully operated using argon ions. In the process ion bombardment of the bacterial cells modifies the cell envelope materials to favor the exogenous DNA molecules to pass through the envelope to enter the cell. The occurrence of the DNA transfer induction was found ion energy and fluence dependent in a complex manner. At ion energy of a few keV and a few tens of keV to moderate fluences the DNA transfer could be induced by ion bombardment of the bacterial cells, while at the same ion energy but to high fluences DNA transfer could not be induced. On the other hand, when the ion energy was medium, about 10–20 keV, the DNA transfer could not be induced by ion bombardment of the cells. The complexity of the experimental results indicated a complex mechanism which should be related to the complex structure of the bacterial E. coli cell envelope. A phase diagram was proposed to interpret different mechanisms involved as functions of the ion energy and fluence.

Mechanisms of ion-bombardment-induced DNA transfer into bacterial E. coli cells

International Nuclear Information System (INIS)

Yu, L.D.; Sangwijit, K.; Prakrajang, K.; Phanchaisri, B.; Thongkumkoon, P.; Thopan, P.; Singkarat, S.; Anuntalabhochai, S.

2014-01-01

Highlights: • Ion bombardment could induce DNA transfer into E. coli cells. • The DNA transfer induction depended on ion energy and fluence. • The mechanism was associated with the bacterial cell envelope structure. • A mechanism phase diagram was proposed to summarize the mechanism. - Abstract: As a useful ion beam biotechnology, ion-bombardment-induced DNA transfer into bacterial Escherichia coli (E. coli) cells has been successfully operated using argon ions. In the process ion bombardment of the bacterial cells modifies the cell envelope materials to favor the exogenous DNA molecules to pass through the envelope to enter the cell. The occurrence of the DNA transfer induction was found ion energy and fluence dependent in a complex manner. At ion energy of a few keV and a few tens of keV to moderate fluences the DNA transfer could be induced by ion bombardment of the bacterial cells, while at the same ion energy but to high fluences DNA transfer could not be induced. On the other hand, when the ion energy was medium, about 10–20 keV, the DNA transfer could not be induced by ion bombardment of the cells. The complexity of the experimental results indicated a complex mechanism which should be related to the complex structure of the bacterial E. coli cell envelope. A phase diagram was proposed to interpret different mechanisms involved as functions of the ion energy and fluence

Magnetoresistance and ion bombardment induced magnetic patterning

International Nuclear Information System (INIS)

Hoeink, V.

2008-01-01

In this thesis the combination of the magnetic patterning of the unidirectional anisotropy and the tunnel magnetoresistance effect is investigated. In my diploma thesis, it has been shown that it is in principle possible to use the magnetic patterning by ion bombardment to magnetically structure the pinned layer in magnetic tunnel junctions (MTJs) with alumina barrier. Furthermore, it has been shown that the side effects which have been observed after this treatment can be at least reduced by an additional heating step. Starting from this point, the applicability of ion bombardment induced magnetic patterning (IBMP) in general and the combination of IBMP and MTJs in particular is investigated and new applications are developed. (orig.)

Influence of the ion bombardment of O{sub 2} plasmas on low-k materials

Energy Technology Data Exchange (ETDEWEB)

Verdonck, Patrick, E-mail: verdonck@imec.be [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Samara, Vladimir [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Open University, Materials Engineering, Walton Hall, Milton Keynes MK7 6AA (United Kingdom); Goodyear, Alec [Open University, Materials Engineering, Walton Hall, Milton Keynes MK7 6AA (United Kingdom); Ferchichi, Abdelkarim; Van Besien, Els; Baklanov, Mikhail R. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Braithwaite, Nicholas [Open University, Department of Physics and Astronomy, Walton Hall, Milton Keynes MK7 6AA (United Kingdom)

2011-10-31

In this study, special tests were devised in order to investigate the influence of ion bombardment on the damage induced in low-k dielectrics by oxygen plasmas. By placing a sample that suffered a lot of ion bombardment and one which suffered little ion bombardment simultaneously in the same plasma, it was possible to verify that ion bombardment in fact helped to protect the low-k film against oxygen plasma induced damage. Exhaustive analyses (ellipsometry, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, porosimetry, capacitance-voltage (C-V) measurements, water contact angle analysis) show that ion bombardment induced the formation of a denser top layer in the film, which then hampered further penetration of active oxygen species deeper into the bulk. This was further confirmed by other tests combining capacitively and inductively coupled plasmas. Therefore, it was possible to conclude that, at least for these plasmas, ion bombardment may help to reduce plasma induced damage to low-k materials.

Computer simulation of the topography evolution on ion bombarded surfaces

CERN Document Server

Zier, M

2003-01-01

The development of roughness on ion bombarded surfaces (facets, ripples) on single crystalline and amorphous homogeneous solids plays an important role for example in depth profiling techniques. To verify a faceting mechanism based not only on sputtering by directly impinging ions but also on the contribution of reflected ions and the redeposition of sputtered material a computer simulation has been carried out. The surface in this model is treated as a two-dimensional line segment profile. The model describes the topography evolution on ion bombarded surfaces including the growth mechanism of a facetted surface, using only the interplay of reflected and primary ions and redeposited atoms.

Ion beam induces nitridation of silicon

International Nuclear Information System (INIS)

Petravic, M.; Williams, J.S.; Conway, M.

1998-01-01

High dose ion bombardment of silicon with reactive species, such as oxygen and nitrogen, has attracted considerable interest due to possible applications of beam-induced chemical compounds with silicon. For example, high energy oxygen bombardment of Si is now routinely used to form buried oxide layers for device purposes, the so called SIMOX structures. On the other hand, Si nitrides, formed by low energy ( 100 keV) nitrogen beam bombardment of Si, are attractive as oxidation barriers or gate insulators, primarily due to the low diffusivity of many species in Si nitrides. However, little data exists on silicon nitride formation during bombardment and its angle dependence, in particular for N 2 + bombardment in the 10 keV range, which is of interest for analytical techniques such as SIMS. In SIMS, low energy oxygen ions are more commonly used as bombarding species, as oxygen provides stable ion yields and enhances the positive secondary ion yield. Therefore, a large body of data can be found in the literature on oxide formation during low energy oxygen bombardment. Nitrogen bombardment of Si may cause similar effects to oxygen bombardment, as nitrogen and oxygen have similar masses and ranges in Si, show similar sputtering effects and both have the ability to form chemical compounds with Si. In this work we explore this possibility in some detail. We compare oxide and nitride formation during oxygen and nitrogen ion bombardment of Si under similar conditions. Despite the expected similar behaviour, some large differences in compound formation were found. These differences are explained in terms of different atomic diffusivities in oxides and nitrides, film structural differences and thermodynamic properties. (author)

Topography of InP surface bombarded by O2+ ion beam

International Nuclear Information System (INIS)

Sun Zhaoqi

1997-01-01

The topography of InP surface bombarded by O 2 + ion beam was investigated. Rippled topographies were observed for bombarded samples, and the data show that the ripple formation starts from a sputtering depth of about 0.4 μm. The wavelength and the disorder of the ripples both increase as the sputtering depth increases. The wavelength of the ripples appears to be sputtering depth dependent rather than sputtering rate dependent. It is confirmed that the ion-beam-induced surface rippling can be effectively suppressed by sample rotation during bombardment

Effect of helium ion bombardment on hydrogen behaviour in stainless steel

International Nuclear Information System (INIS)

Guseva, M.I.; Stolyarova, V.G.; Gorbatov, E.A.

1987-01-01

The effect of helium ion bombardment on hydrogen behaviour in 12Kh18N10T stainless steel is investigated. Helium and hydrogen ion bombardment was conducted in the ILU-3 ion accelerator; the fluence and energy made up 10 16 -5x10 17 cm -2 , 30 keV and 10 16 -5x10 18 cm -2 , 10 keV respectively. The method of recoil nuclei was used for determination of helium and hydrogen content. Successive implantation of helium and hydrogen ions into 12Kh18N10T stainless steel results in hydrogen capture by defects formed by helium ions

Radiation-induced segregation in light-ion bombarded Ni-8% Si

International Nuclear Information System (INIS)

Packan, N.H.; Heatherly, L.; Kesternich, W.; Schroeder, H.

1986-01-01

Tensile specimens 60 μm thick of Ni-8 at. % Si have been bombarded at 475 0 C to doses of 0.1 to 0.3 dpa with either 7 MeV proton or 28 MeV alpha particle beams. Deliberate embrittlement by high temperature (700 0 C) preimplantation of helium was required to produce intergranular fracture. Depth profile sputtering and analysis in a Scanning Auger Microprobe was then used to study radiation-induced segregation of silicon both at the external surfaces and at internal interfaces. The external surfaces exhibited a strongly silicon-enriched zone for the first 10 to 20 nm followed by a broad (approx.200 nm), shallow silicon-depleted region. Segregation of silicon to grain boundaries varied from interface to interface and possibly from region to region on a given interface. In general, however, depth profiles of silicon content with distance from internal boundaries showed no noticeable depletion zone and a more gradual fall-off compared to the profiles from external surfaces. The variations of RIS among boundaries and with type of interface probably reflect, at least in part, intrinsic differences in sink efficiency

Kinetics of interaction from low-energy-ion bombardment of surfaces

International Nuclear Information System (INIS)

Horton, C.C.

1988-01-01

The kinetics of interaction from low energy oxygen ion bombardment of carbon and Teflon surfaces have been investigated. The surfaces were bombarded with 4.5 to 93 eV oxygen ions and emitted species were observed with a mass spectrometer. To obtain the kinetic information, the ion beam was square pulse modulated and reaction products were observed as a function of time. The kinetic information is contained in the response of the emitted species to the pulsed ion beam. Oxygen bombardment of carbon produced CO in three parallel branches with each following an adsorption-desorption process. The fast branch, with a rate constants of 12,000/sec, appeared to be sputter induced an was absent below about 19 eV. The medium and slow branches, with rate constants of 850/sec and 45/sec respectively, has little energy dependence and appeared to be due to chemical sputtering from two sites. The ratio of the fraction of the medium branch to that of the slow was constant at 1:3. The bombardment of Teflon produced CF in two parallel branches, with one following a series process and the other an adsorb-desorb process. The rate constant of the other branch were 22,000/sec and 7,000/sec and the rate constant of the other branch was 90/sec. The total signal fell monotonically with decreasing ion energy with the fraction for each branch holding constant at 71% for the series and 29% for the adsorb-desorb

Comparison of secondary ion emission induced in silicon oxide by MeV and KeV ion bombardment

International Nuclear Information System (INIS)

Allali, H.; Nsouli, B.; Thomas, J.P.; Szymczak, W.; Wittmaack, K.

1993-09-01

The surface and near-surface composition of SiO 2 layers, has been investigated by negative secondary ion emission mass spectrometry (SIMS) using MeV and KeV ion bombardment in combination with time-of-flight (TOF) mass analysis. The spectra recorded in the mass range 0-100 u are dominated by surface impurities, notably hydrocarbons and silicon polyanions incorporating H and OH entities. The characteristic (fragmentation) patterns are quite different for light and high-velocity ion impact. In high-velocity TOF-SIMS analysis of P-doped layers, prepared by chemical vapour deposition (CVD), the mass lines at 63 and 79 u are very prominent and appear to correlate with the phosphorus concentration (PO 2 and PO 3 , respectively). It is shown, however, that for unambiguous P analysis one has to use dynamic SIMS or high mass resolution. (author) 11 refs., 5 figs

Particle-In-Cell/Monte Carlo Simulation of Ion Back Bombardment in Photoinjectors

International Nuclear Information System (INIS)

Qiang, Ji; Corlett, John; Staples, John

2009-01-01

In this paper, we report on studies of ion back bombardment in high average current dc and rf photoinjectors using a particle-in-cell/Monte Carlo method. Using H 2 ion as an example, we observed that the ion density and energy deposition on the photocathode in rf guns are order of magnitude lower than that in a dc gun. A higher rf frequency helps mitigate the ion back bombardment of the cathode in rf guns

Preliminary report into the effects of nitrogen ion bombardment treatment on mustard seeds

International Nuclear Information System (INIS)

Smith, C.W.; Al-Hashmi, S.A.R.; Ahmed, N.A.G.; Pollard, M.

1988-01-01

Mustard seeds have been subjected to nitrogen ion bombardment. A range of conditions was found within which there was an enhancement in the growth of seedlings from the ion bombardment treated seeds relative to those grown from control seeds. Scanning electron microscopy was used to examine seeds after treatment. It appeared that there had been an etching of the seed coating by the ion bombardment. This view was supported by experiments which showed that the rate of capillary water uptake by the treated seeds had been enhanced. (author)

Experiments on secondary ion emission with multicharged keV ion bombardement

International Nuclear Information System (INIS)

Della Negra, S.; Depauw, J.; Joret, H.; Le Beyec, Y.; Schweikert, E.A.

1987-01-01

An electron cyclotron resonance ion source was used to study the influence of the incident charge state of keV ions on secondary ion emission. The experiments were run with 18 keV Arn+ (1 < n < 11) beams produced by a minimafios source. Various types of targets were bombarded by the ion beam and the sputtered ionized species were identified by time of flight mass spectrometry. The experimental arrangement is detailed and preliminary results are indicated

Direct evidence for a thermal effect of Ar+ ion bombardment in a conventional sputtering mode

International Nuclear Information System (INIS)

Okuyama, F.; Fujimoto, Y.

1986-01-01

Evidence is presented that the Ar + ion bombardment for sputtering in Auger electron spectroscopy can heat the target up to 2000 0 C if the target has poor heat conduction. Polycrystalline microneedles of Cr exhibited spherical tips after being exposed to 3 keV Ar + ions, proving that the needle tips were melted by impacting Ar + ions. Microneedles of Mo ion bombarded under the same condition were bent plastically, which perhaps reflects the thermal annealing of the needles during ion bombardment

Self-Assembled Gold Nano-Ripple Formation by Gas Cluster Ion Beam Bombardment.

Science.gov (United States)

Tilakaratne, Buddhi P; Chen, Quark Y; Chu, Wei-Kan

2017-09-08

In this study, we used a 30 keV argon cluster ion beam bombardment to investigate the dynamic processes during nano-ripple formation on gold surfaces. Atomic force microscope analysis shows that the gold surface has maximum roughness at an incident angle of 60° from the surface normal; moreover, at this angle, and for an applied fluence of 3 × 10 16 clusters/cm², the aspect ratio of the nano-ripple pattern is in the range of ~50%. Rutherford backscattering spectrometry analysis reveals a formation of a surface gradient due to prolonged gas cluster ion bombardment, although the surface roughness remains consistent throughout the bombarded surface area. As a result, significant mass redistribution is triggered by gas cluster ion beam bombardment at room temperature. Where mass redistribution is responsible for nano-ripple formation, the surface erosion process refines the formed nano-ripple structures.

Is low-energy-ion bombardment generated X-ray emission a secondary mutational source to ion-beam-induced genetic mutation?

Energy Technology Data Exchange (ETDEWEB)

Thongkumkoon, P. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Prakrajang, K. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Faculty of Science, Maejo University, Chiang Mai 50290 (Thailand); Thopan, P.; Yaopromsiri, C. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Suwannakachorn, D. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2013-07-15

Highlights: ► Detected X-ray emission from metal, plastic and biological samples. ► Characteristic X-ray emission was detected from metal but not from non-metals. ► Low-energy ion bombarded bacteria held in different sample holders. ► Bacteria held in metal holder had higher mutation rate than in plastic holder. ► Ion-beam-induced X-ray from biological sample is not a basic mutation source. -- Abstract: Low-energy ion beam biotechnology has achieved tremendous successes in inducing crop mutation and gene transfer. However, mechanisms involved in the related processes are not yet well understood. In ion-beam-induced mutation, ion-bombardment-produced X-ray has been proposed to be one of the secondary mutation sources, but the speculation has not yet been experimentally tested. We carried out this investigation to test whether the low-energy ion-beam-produced X-ray was a source of ion-beam-induced mutation. In the investigation, X-ray emission from 29-keV nitrogen- or argon- ion beam bombarded bacterial Escherichia coli (E. coli) cells held in a metal or plastic sample holder was in situ detected using a highly sensitive X-ray detector. The ion beam bombarded bacterial cells held in different material holders were observed for mutation induction. The results led to a conclusion that secondary X-ray emitted from ion-beam-bombarded biological living materials themselves was not a, or at least a negligible, mutational source, but the ion-beam-induced X-ray emission from the metal that made the sample holder could be a source of mutation.

Is low-energy-ion bombardment generated X-ray emission a secondary mutational source to ion-beam-induced genetic mutation?

International Nuclear Information System (INIS)

Thongkumkoon, P.; Prakrajang, K.; Thopan, P.; Yaopromsiri, C.; Suwannakachorn, D.; Yu, L.D.

2013-01-01

Highlights: ► Detected X-ray emission from metal, plastic and biological samples. ► Characteristic X-ray emission was detected from metal but not from non-metals. ► Low-energy ion bombarded bacteria held in different sample holders. ► Bacteria held in metal holder had higher mutation rate than in plastic holder. ► Ion-beam-induced X-ray from biological sample is not a basic mutation source. -- Abstract: Low-energy ion beam biotechnology has achieved tremendous successes in inducing crop mutation and gene transfer. However, mechanisms involved in the related processes are not yet well understood. In ion-beam-induced mutation, ion-bombardment-produced X-ray has been proposed to be one of the secondary mutation sources, but the speculation has not yet been experimentally tested. We carried out this investigation to test whether the low-energy ion-beam-produced X-ray was a source of ion-beam-induced mutation. In the investigation, X-ray emission from 29-keV nitrogen- or argon- ion beam bombarded bacterial Escherichia coli (E. coli) cells held in a metal or plastic sample holder was in situ detected using a highly sensitive X-ray detector. The ion beam bombarded bacterial cells held in different material holders were observed for mutation induction. The results led to a conclusion that secondary X-ray emitted from ion-beam-bombarded biological living materials themselves was not a, or at least a negligible, mutational source, but the ion-beam-induced X-ray emission from the metal that made the sample holder could be a source of mutation

Study on evolution of gases from fluoropolymer films bombarded with heavy ions

International Nuclear Information System (INIS)

Minamisawa, Renato Amaral; Zimmerman, Robert Lee; Budak, Satilmis; Ila, Daryush

2008-01-01

Ion beam bombardment provides a unique way of material modification by inducing a high degree of localized electronic excitation. The ion track, or affected volume along the ion path through the material is related to the total damage and possible structural changes. Here we study the evolution of gases emitted by poly(tetrafluorethylene-co-perfluoro-(propyl vinyl ether)) (PFA) fluoropolymer bombarded with MeV gold ions. The gas was monitored by a residual gas analyzer (RGA), as a function of the ion fluence. Micro-Raman, atomic force microscopy and optical absorption were used to analyze the chemical structure changes and sputtering yield

Formation of oxides and segregation of mobile atoms during SIMS profiling of Si with oxygen ions

Energy Technology Data Exchange (ETDEWEB)

Petravic, M.; Williams, J.S.; Svensson, B.G.; Conway, M. [Australian National Univ., Canberra, ACT (Australia). Research School of Physical Sciences

1993-12-31

An oxygen beam is commonly used in secondary ion mass spectroscopy (SIMS) analysis to enhance the ionization probability for positive secondary ions. It has been observed, however, that this technique produces in some cases a great degradation of depth resolution. The most pronounced effects have been found for impurities in silicon under oxygen bombardment at angles of incidence smaller than {approx} 30 deg from the surface normal. A new approach is described which involved broadening of SIMS profiles for some mobile atoms, such as Cu, Ni and Au, implanted into silicon. The anomalously large broadening is explained in terms of segregation at a SiO{sub 2}/Si interface formed during bombardment with oxygen at impact angles less than 30 deg. 2 refs., 1 tab., 4 figs.

Formation of oxides and segregation of mobile atoms during SIMS profiling of Si with oxygen ions

Energy Technology Data Exchange (ETDEWEB)

Petravic, M; Williams, J S; Svensson, B G; Conway, M [Australian National Univ., Canberra, ACT (Australia). Research School of Physical Sciences

1994-12-31

An oxygen beam is commonly used in secondary ion mass spectroscopy (SIMS) analysis to enhance the ionization probability for positive secondary ions. It has been observed, however, that this technique produces in some cases a great degradation of depth resolution. The most pronounced effects have been found for impurities in silicon under oxygen bombardment at angles of incidence smaller than {approx} 30 deg from the surface normal. A new approach is described which involved broadening of SIMS profiles for some mobile atoms, such as Cu, Ni and Au, implanted into silicon. The anomalously large broadening is explained in terms of segregation at a SiO{sub 2}/Si interface formed during bombardment with oxygen at impact angles less than 30 deg. 2 refs., 1 tab., 4 figs.

Radicals and ions controlling by adjusting the antenna-substrate distance in a-Si:H deposition using a planar ICP for c-Si surface passivation

Energy Technology Data Exchange (ETDEWEB)

Zhou, H.P., E-mail: haipzhou@uestc.edu.cn [School of Energy Science and Engineering, University of Electronic Science and Technology of China, 2006 Xiyuan Ave., West High-Tech Zone, Chengdu, Sichuan, 611731 (China); Plasma Sources and Application Center, NIE, and Institute of Advanced Studies, Nanyang Technological University, 637616 (Singapore); Xu, S., E-mail: shuyan.xu@nie.edu.sg [Plasma Sources and Application Center, NIE, and Institute of Advanced Studies, Nanyang Technological University, 637616 (Singapore); Xu, M. [Key Laboratory of Information Materials of Sichuan Province & School of Electrical and Information Engineering, Southwest University for Nationalities, Chengdu, 610041 (China); Xu, L.X.; Wei, D.Y. [Plasma Sources and Application Center, NIE, and Institute of Advanced Studies, Nanyang Technological University, 637616 (Singapore); Xiang, Y. [School of Energy Science and Engineering, University of Electronic Science and Technology of China, 2006 Xiyuan Ave., West High-Tech Zone, Chengdu, Sichuan, 611731 (China); Xiao, S.Q. [Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi, 214122 (China)

2017-02-28

Highlights: • A planar ICP was used to grow a-Si:H films for c-Si surface passivation. • The direct- and remote-plasma was compared for high-quality c-Si surface passivation. • The remote ICP with controlled plasma species and ion bombardments is preferable for the surface passivation of c-Si. - Abstract: Being a key issue in the research and fabrication of silicon heterojunction (SHJ) solar cells, crystalline silicon (c-Si) surface passivation is theoretically and technologically intricate due to its complicate dependence on plasma characteristics, material properties, and plasma-material interactions. Here amorphous silicon (a-Si:H) grown by a planar inductively coupled plasma (ICP) reactor working under different antenna-substrate distances of d was used for the surface passivation of low-resistivity p-type c-Si. It is found that the microstructures (i.e., the crystallinity, Si-H bonding configuration etc.) and passivation function on c-Si of the deposited a-Si:H were profoundly influenced by the parameter of d, which primarily determines the types of growing precursors of SiH{sub n}/H contributing to the film growth and the interaction between the plasma and growing surface. c-Si surface passivation is analyzed in terms of the d-dependent a-Si:H properties and plasma characteristics. The controlling of radical types and ion bombardment on the growing surface through adjusting parameter d is emphasized.

Structural and magnetic properties of ion-beam bombarded Co/Pt multilayers

Energy Technology Data Exchange (ETDEWEB)

Lin, K.W.; Guo, J.Y.; Lin, S.R.; Ouyang, H. [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402 (China); Tsai, C.J. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300 (China); Van Lierop, J. [Department of Physics and Astronomy, University of Manitoba, Winnipeg (Canada); Phuoc, N.N.; Suzuki, T. [Information Storage Materials Laboratory, Toyota Technological Institute, Nagoya 468-8511 (Japan)

2007-12-15

A series of [Pt(2 nm)/Co(2 nm)]{sub 10}/Pt(30 nm) multilayers were deposited by using an ion-beam technique. X-ray diffraction and transmission electron microscopy results have shown that as-deposited samples consist of h.c.p. Co and f.c.c. Pt phases. Disordered CoPt{sub 3} phases were developed with increasing End-Hall voltage (V{sub EH}) that induces greater ion-beam bombardment energy during deposition. This indicates that intermixing of Co and Pt increases with ion-beam bombardment. The coercivities (ranging from 100 Oe to 300 Oe) of Co/Pt multilayers decreased with increasing V{sub EH}. After annealing, the formation of CoPt{sub 3} was observed in these ion-beam bombarded samples, resulting in lower coercivities (H{sub c}{proportional_to} 50 Oe). The depressed transition temperature of CoPt{sub 3} for films deposited with the largest V{sub EH} was attributed to distorted CoPt{sub 3} structures that appeared with annealing. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Excited-atom production by electron and ion bombardment of alkali halides

International Nuclear Information System (INIS)

Walkup, R.E.; Avouris, P.; Ghosh, A.P.

1987-01-01

We present experimental results on the production of excited atoms by electron and ion bombardment of alkali halides. For the case of electron bombardment, Doppler shift measurements show that the electronically excited atoms have a thermal velocity distribution in equilibrium with the surface temperature. Measurements of the absolute yield of excited atoms, the distribution of population among the excited states, and the systematic dependence on incident electron current and sample temperature support a model in which the excited atoms are produced by gas-phase collisions between desorbed ground-state atoms and secondary electrons. In contrast, for the case of ion bombardment, the excited atoms are directly sputtered from the surface, with velocity distributions characteristic of a collision cascade, and with typical energies of --10 eV

Damage and redistribution of impurities by ionic bombardment

International Nuclear Information System (INIS)

Tognetti, N.P.

1982-01-01

Some aspects of displacement collisions in solids bombarded with ions in the medium energy range have been studied using the backscattering and channelling techniques. The production of lattice damage and the spatial redistribution of atoms within the collision cascade were the two main effects considered and experimentally studied. A comprehensive study of disorder production in GaAs was carried out at 40 K for a variety of ions and ion energies, providing insight into the mechanisms of damage generation from both the macro and microscopic points of view. Experiments on thermal recovery of partially disordered substrates revealed that annealing occurs from approximately 100 K to 300 K. A direct procedure developed for the obtainment of damage profiles from backscattering-channelling measurements is described. The net spatial redistribution of displaced atoms, in combined impurity-matrix substrates was studied and compared with existing theories of ion beam mixing. The Ag-Si system was studied for a wide range of fluence of bombarding Ar + ions. Furthermore, the contribution of atomic mixing in the experimental observation of Ge implantation at high doses into Si is discussed. (M.E.L) [es

Destruction of C60 films by boron ion bombardment

International Nuclear Information System (INIS)

Ren Zhongmin; Du Yuancheng; Ying Zhifeng; Xiong Xiaxing; Li Fuming

1995-01-01

C 60 films are bombarded by 100 keV boron ion beams at doses ranging from 3x10 14 to 1x10 16 /cm 2 . The bombarded films are analyzed using Fourier transform infrared spectroscopy (FTIR), Raman spectra and X-ray diffraction (XRD) measurements. Most C 60 soccer-balls in the implanted region in the films are found to be broken at a dose over 1x10 15 /cm 2 , while at a dose less than 6x10 14 /cm 2 a few C 60 molecules remain undestroyed and maintain some crystal structure. The results of the analyses suggest a complete disintegration of a C 60 molecule under B + bombardment. ((orig.))

Development of pits and cones on ion bombarded copper

International Nuclear Information System (INIS)

Tanovic, L.A.; Carter, G.; Nobes, M.J.; Whitton, I.L.; Williams, J.S.

1980-01-01

The formation of pits and cones on Ar ion bombarded copper has been studied. Carefully polished surfaces of large grained 99.999% pure copper crystals have been bombarded at normal incidence with 40 keV argon ions. The cone formation has been investigated for annealed and non-annealed crystals at room temperature and at 30 K and in the case of monocrystal and polycrystal samples. Although in the most other studies the presence of impurities is as a necessary condition for generation of cones and pits the obtained experimental results show that under certain conditions these features are formed on clean surfaces. It is shown that the dominant parameter in the production of cones on copper is the crystal orientation [ru

Surface temperature measurements for ion-bombarded Si and GaAs at 1.0 to 2.0 MeV

International Nuclear Information System (INIS)

Lowe, L.F.; Kennedy, J.K.; Davies, D.E.; Deane, M.L.; Eyges, L.J.

1975-01-01

Surface temperatures of ion-bombarded silicon and gallium arsenide have been measured using an infrared detector. Ion beams of N + , N + 2 , O + , O + 2 , C + , CO + , and H + were used at energies from 1--2.0 MeV and at current densities up to 12 μAcenter-dotcm/sup -2/. No temperature dependence was found on ion species, energy, or current. The change in temperature depended only on beam power, target material, and sample mounting technique. With proper mounting temperature increases of 20 degreeC for silicon and 65 degreeC for gallium arsenide were observed for a beam power density of 1.0 Wcenter-dotcm/sup -2/

Ion bombardment techniques - recent developments in SIMS

International Nuclear Information System (INIS)

Konarski, P.; Miśnik, M.

2013-01-01

We present a short review of cluster ion bombardment technique recently applied in SIMS. Many advantages of using cluster ion beams are specified over monoatomic ion species. Cluster ions open really new perspectives especially in organic based structures analysis. Nevertheless cluster ions are not the perfect solution and still new ideas of ion erosion in SIMS are needed. Another issue discussed is 'storing matter' technique applied for quantitative analysis in SIMS. Simple idea of sputter deposition of eroded material onto rotating substrate and then analysing the stored material allows to avoid strong matrix effects in SIMS. Presented are the results performed in Tele and Radio Research Institute, Warszawa, Poland. These are the first results of ‘storing matter’ technique performed in one analytical chamber of SIMS instrument. (authors)

Ion bombardment simulation: a review related to fusion radiation damage

International Nuclear Information System (INIS)

Brimhall, J.L.

1975-01-01

Prime emphasis is given to reviewing the ion bombardment data on the refractory metals molybdenum, niobium and vanadium which have been proposed for use in advanced fusion devices. The temperature and dose dependence of the void parameters are correlated among these metals. The effect of helium and hydrogen gas on the void parameters is also included. The similarities and differences of the response of these materials to high dose, high temperature radiation damage are evaluated. Comparisons are made with results obtained from stainless steel and nickel base alloys. The ion bombardment data is then compared and correlated, as far as possible, with existing neutron data on the refractory metals. The theoretically calculated damage state produced by neutrons and ions is also briefly discussed and compared to experimental data wherever possible. The advantages and limitations of ion simulation in relation to fusion radiation damage are finally summarized

The influence of ion bombardment on emission properties of carbon materials

International Nuclear Information System (INIS)

Chepusov, Alexander; Komarskiy, Alexander; Kuznetsov, Vadim

2014-01-01

When electric-vacuum device works its cathode surface experiences bombardment with ions of residual gases. Effects of ion bombardment impact on surface of field emission cathodes made of carbon materials may essentially change emission properties of such cathodes. It changes emission start electric field strength, voltage vs. current characteristic of material, its relief and electron structure of the surface layer. Field emission cathode operating mode, variation of radiation doses allow to obtain both good effects: maximal electric current, surface recovery – and negative ones: the worst emission properties and surface destruction, amorphization.

The influence of ion bombardment on emission properties of carbon materials

Energy Technology Data Exchange (ETDEWEB)

Chepusov, Alexander, E-mail: chepusov@iep.uran.ru [The Institute of Electrophysics of the Ural Division of the Russian Academy of Sciences (IEP UD RAS), 620016, 106 Amundsen Street, Ekaterinburg (Russian Federation); Ural Federal University, 620002, 19 Mira Street, Ekaterinburg (Russian Federation); Komarskiy, Alexander, E-mail: aakomarskiy@gmail.com [The Institute of Electrophysics of the Ural Division of the Russian Academy of Sciences (IEP UD RAS), 620016, 106 Amundsen Street, Ekaterinburg (Russian Federation); Ural Federal University, 620002, 19 Mira Street, Ekaterinburg (Russian Federation); Kuznetsov, Vadim, E-mail: kuznetsov@iep.uran.ru [The Institute of Electrophysics of the Ural Division of the Russian Academy of Sciences (IEP UD RAS), 620016, 106 Amundsen Street, Ekaterinburg (Russian Federation)

2014-07-01

When electric-vacuum device works its cathode surface experiences bombardment with ions of residual gases. Effects of ion bombardment impact on surface of field emission cathodes made of carbon materials may essentially change emission properties of such cathodes. It changes emission start electric field strength, voltage vs. current characteristic of material, its relief and electron structure of the surface layer. Field emission cathode operating mode, variation of radiation doses allow to obtain both good effects: maximal electric current, surface recovery – and negative ones: the worst emission properties and surface destruction, amorphization.

Model to estimate fractal dimension for ion-bombarded materials

Energy Technology Data Exchange (ETDEWEB)

Hu, A., E-mail: hu77@purdue.edu; Hassanein, A.

2014-03-15

Comprehensive fractal Monte Carlo model ITMC-F (Hu and Hassanein, 2012 [1]) is developed based on the Monte Carlo ion bombardment simulation code, i.e., Ion Transport in Materials and Compounds (ITMC) code (Hassanein, 1985 [2]). The ITMC-F studies the impact of surface roughness on the angular dependence of sputtering yield. Instead of assuming material surfaces to be flat or composed of exact self-similar fractals in simulation, we developed a new method to describe the surface shapes. Random fractal surfaces which are generated by midpoint displacement algorithm and support vector machine algorithm are combined with ITMC. With this new fractal version of ITMC-F, we successfully simulated the angular dependence of sputtering yield for various ion-target combinations, with the input surface roughness exponent directly depicted from experimental data (Hu and Hassanein, 2012 [1]). The ITMC-F code showed good agreement with the experimental data. In advanced, we compare other experimental sputtering yield with the results from ITMC-F to estimate the surface roughness exponent for ion-bombarded material in this research.

Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay

Science.gov (United States)

Novaković, M.; Zhang, K.; Popović, M.; Bibić, N.; Hofsäss, H.; Lieb, K. P.

2011-05-01

Studies on ion-irradiated transition-metal/silicon bilayers demonstrate that interface mixing and silicide phase formation depend sensitively on the ion and film parameters, including the structure of the metal/Si interface. Thin Co layers e-gun evaporated to a thickness of 50 nm on Si(1 0 0) wafers were bombarded at room temperature with 400-keV Xe + ions at fluences of up to 3 × 10 16 cm -2. We used either crystalline or pre-amorphized Si wafers the latter ones prepared by 1.0-keV Ar-ion implantation. The as-deposited or Xe-ion-irradiated samples were then isochronally annealed at temperatures up to 700 °C. Changes of the bilayer structures induced by ion irradiation and/or annealing were investigated with RBS, XRD and HRTEM. The mixing rate for the Co/c-Si couples, Δ σ2/ Φ = 3.0(4) nm 4, is higher than the value expected for ballistic mixing and about half the value typical for spike mixing. Mixing of pre-amorphized Si is much weaker relative to crystalline Si wafers, contrary to previous results obtained for Fe/Si bilayers. Annealing of irradiated samples produces very similar interdiffusion and phase formation patterns above 400 °C as in the non-irradiated Co/Si bilayers: the phase evolution follows the sequence Co 2Si → CoSi → CoSi 2.

Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay

International Nuclear Information System (INIS)

Novakovic, M.; Zhang, K.; Popovic, M.; Bibic, N.; Hofsaess, H.; Lieb, K.P.

2011-01-01

Studies on ion-irradiated transition-metal/silicon bilayers demonstrate that interface mixing and silicide phase formation depend sensitively on the ion and film parameters, including the structure of the metal/Si interface. Thin Co layers e-gun evaporated to a thickness of 50 nm on Si(1 0 0) wafers were bombarded at room temperature with 400-keV Xe + ions at fluences of up to 3 x 10 16 cm -2 . We used either crystalline or pre-amorphized Si wafers the latter ones prepared by 1.0-keV Ar-ion implantation. The as-deposited or Xe-ion-irradiated samples were then isochronally annealed at temperatures up to 700 o C. Changes of the bilayer structures induced by ion irradiation and/or annealing were investigated with RBS, XRD and HRTEM. The mixing rate for the Co/c-Si couples, Δσ 2 /Φ = 3.0(4) nm 4 , is higher than the value expected for ballistic mixing and about half the value typical for spike mixing. Mixing of pre-amorphized Si is much weaker relative to crystalline Si wafers, contrary to previous results obtained for Fe/Si bilayers. Annealing of irradiated samples produces very similar interdiffusion and phase formation patterns above 400 o C as in the non-irradiated Co/Si bilayers: the phase evolution follows the sequence Co 2 Si → CoSi → CoSi 2 .

Electron emission from Inconel under ion bombardment

International Nuclear Information System (INIS)

Alonso, E.V.; Baragiola, R.A.; Ferron, J.; Oliva-Florio, A.

1979-01-01

Electron yields from clean and oxidized Inconel 625 surfaces have been measured for H + ,H 2 + ,He + ,O + and Ar + ions at normal incidence in the energy range 1.5 to 40 keV. These measurements have been made under ultrahigh vacuum and the samples were freed of surface contaminants by bombarding with high doses of either 20 keV H 2 + or 30 keV Ar + ions. Differences in yields of oxidized versus clean surfaces are explained in terms of differences in the probability that electrons internally excited escape upon reaching the surface. (author)

Effects of low-energy ion beam bombardment on metal oxides

International Nuclear Information System (INIS)

Sullivan, J.L.; Saied, S.O.; Choudhury, T.

1993-01-01

This paper describes a study of Ar ion bombardment damage in metal oxides. In the energy range 1 to 5 keV, preferential oxygen removal and reduction of the oxides was found to depend on ion current density, but to be independent of beam energy. (author)

The surface topography of Inconel, stainless steel and copper after argon ion bombardment

International Nuclear Information System (INIS)

Vogelbruch, K.; Vietzke, E.

1983-01-01

Energetic particle bombardment of metals is known to change the surface topography. To simulate the behaviour of the first wall of a fusion device under real plasma conditions, we have investigated the surface topography of rotating targets after 30 keV argon ion bombardment at 70deg incident angle by electron scanning micrographs. Under these conditions Inconel 600, 601, 625, stainless steel, and copper showed no cones, pyramids or cliffs, but only etching figures and at higher ion doses relatively flat hills. Thus, it can be concluded, that the influence of energetic particles on the first wall of a fusion reactor is smaller than expected from the results of such sputtering experiments, which have dealt with the formation of surface structures under ion bombardment at constant incident direction. (author)

Confirming the key role of Ar+ ion bombardment in the growth feature of nanostructured carbon materials by PECVD

Science.gov (United States)

Liu, Yulin; Lin, Jinghuang; Jia, Henan; Chen, Shulin; Qi, Junlei; Qu, Chaoqun; Cao, Jian; Feng, Jicai; Fei, Weidong

2017-11-01

In order to confirm the key role of Ar+ ion bombardment in the growth feature of nanostructured carbon materials (NCMs), here we report a novel strategy to create different Ar+ ion states in situ in plasma enhanced chemical vapor deposition (PECVD) by separating catalyst film from the substrate. Different bombardment environments on either side of the catalyst film were created simultaneously to achieve multi-layered structural NCMs. Results showed that Ar+ ion bombardment is crucial and complex for the growth of NCMs. Firstly, Ar+ ion bombardment has both positive and negative effects on carbon nanotubes (CNTs). On one hand, Ar+ ions can break up the graphic structure of CNTs and suppress thin CNT nucleation and growth. On the other hand, Ar+ ion bombardment can remove redundant carbon layers on the surface of large catalyst particles which is essential for thick CNTs. As a result, the diameter of the CNTs depends on the Ar+ ion state. As for vertically oriented few-layer graphene (VFG), Ar+ ions are essential and can even convert the CNTs into VFG. Therefore, by combining with the catalyst separation method, specific or multi-layered structural NCMs can be obtained by PECVD only by changing the intensity of Ar+ ion bombardment, and these special NCMs are promising in many fields.

Confirming the key role of Ar+ ion bombardment in the growth feature of nanostructured carbon materials by PECVD.

Science.gov (United States)

Liu, Yulin; Lin, Jinghuang; Jia, Henan; Chen, Shulin; Qi, Junlei; Qu, Chaoqun; Cao, Jian; Feng, Jicai; Fei, Weidong

2017-11-24

In order to confirm the key role of Ar + ion bombardment in the growth feature of nanostructured carbon materials (NCMs), here we report a novel strategy to create different Ar + ion states in situ in plasma enhanced chemical vapor deposition (PECVD) by separating catalyst film from the substrate. Different bombardment environments on either side of the catalyst film were created simultaneously to achieve multi-layered structural NCMs. Results showed that Ar + ion bombardment is crucial and complex for the growth of NCMs. Firstly, Ar + ion bombardment has both positive and negative effects on carbon nanotubes (CNTs). On one hand, Ar + ions can break up the graphic structure of CNTs and suppress thin CNT nucleation and growth. On the other hand, Ar + ion bombardment can remove redundant carbon layers on the surface of large catalyst particles which is essential for thick CNTs. As a result, the diameter of the CNTs depends on the Ar + ion state. As for vertically oriented few-layer graphene (VFG), Ar + ions are essential and can even convert the CNTs into VFG. Therefore, by combining with the catalyst separation method, specific or multi-layered structural NCMs can be obtained by PECVD only by changing the intensity of Ar + ion bombardment, and these special NCMs are promising in many fields.

Self-organised nano-structuring of thin oxide-films under swift heavy ion bombardment

International Nuclear Information System (INIS)

Bolse, Wolfgang

2006-01-01

Surface instabilities and the resulting self-organisation processes play an important role in nano-technology since they allow for large-array nano-structuring. We have recently found that the occurrence of such instabilities in thin film systems can be triggered by energetic ion bombardment and the subsequent self-assembly of the surface can be nicely controlled by fine-tuning of the irradiation conditions. The role of the ion in such processes is of double nature: If the instability is latently present already in the virgin sample, but self-assembly cannot take place because of kinetic barriers, the ion impact may just supply the necessary atomic mobility. On the other hand, the surface may become instable due to the ion beam induced material modifications and further irradiation then results in its reorganisation. In the present paper, we will review recently observed nano-scale self-organisation processes in thin oxide-films induced by the irradiation with swift heavy ions (SHI) at some MeV/amu energies. The first example is about SHI induced dewetting, which is driven by capillary forces already present in the as-deposited samples. The achieved dewetting pattern show an amazing similarity to those observed for liquid polymer films on Si, although in the present case the samples were kept at 80 K and hence have never reached their melting point. The second example is about self-organised lamellae formation driven by planar stresses, which are induced by SHI bombardment under grazing incidence and result in a surface instability and anisotropic plastic deformation (hammering effect). Taking advantage of these effects and modifying the irradiation procedure, we were able to generate more complex structures like NiO-'nano-towers' of 2 μm height and 200 nm in diameter

Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay

Energy Technology Data Exchange (ETDEWEB)

Novakovic, M. [VINCA Institute of Nuclear Sciences, 11001 Belgrade (Serbia); II. Physikalisches Institut, Georg-August-Universitaet Goettingen, Friedrich-Hund-Platz 1, 37077 Goettingen (Germany); Zhang, K. [II. Physikalisches Institut, Georg-August-Universitaet Goettingen, Friedrich-Hund-Platz 1, 37077 Goettingen (Germany); Popovic, M.; Bibic, N. [VINCA Institute of Nuclear Sciences, 11001 Belgrade (Serbia); II. Physikalisches Institut, Georg-August-Universitaet Goettingen, Friedrich-Hund-Platz 1, 37077 Goettingen (Germany); Hofsaess, H. [II. Physikalisches Institut, Georg-August-Universitaet Goettingen, Friedrich-Hund-Platz 1, 37077 Goettingen (Germany); Lieb, K.P., E-mail: plieb@gwdg.d [II. Physikalisches Institut, Georg-August-Universitaet Goettingen, Friedrich-Hund-Platz 1, 37077 Goettingen (Germany)

2011-05-01

Studies on ion-irradiated transition-metal/silicon bilayers demonstrate that interface mixing and silicide phase formation depend sensitively on the ion and film parameters, including the structure of the metal/Si interface. Thin Co layers e-gun evaporated to a thickness of 50 nm on Si(1 0 0) wafers were bombarded at room temperature with 400-keV Xe{sup +} ions at fluences of up to 3 x 10{sup 16} cm{sup -2}. We used either crystalline or pre-amorphized Si wafers the latter ones prepared by 1.0-keV Ar-ion implantation. The as-deposited or Xe-ion-irradiated samples were then isochronally annealed at temperatures up to 700 {sup o}C. Changes of the bilayer structures induced by ion irradiation and/or annealing were investigated with RBS, XRD and HRTEM. The mixing rate for the Co/c-Si couples, {Delta}{sigma}{sup 2}/{Phi} = 3.0(4) nm{sup 4}, is higher than the value expected for ballistic mixing and about half the value typical for spike mixing. Mixing of pre-amorphized Si is much weaker relative to crystalline Si wafers, contrary to previous results obtained for Fe/Si bilayers. Annealing of irradiated samples produces very similar interdiffusion and phase formation patterns above 400 {sup o}C as in the non-irradiated Co/Si bilayers: the phase evolution follows the sequence Co{sub 2}Si {yields} CoSi {yields} CoSi{sub 2}.

Effects of ion beam bombardment of carbon thin films deposited onto tungsten carbide and tool steels

Energy Technology Data Exchange (ETDEWEB)

Awazu, Kaoru; Yoshida, Hiroyuki [Industrial Research Inst. of Ishikawa (Japan); Watanabe, Hiroshi [Gakushuin Univ., Tokyo (Japan); Iwaki, Masaya; Guzman, L [RIKEN, Saitama (Japan)

1992-04-15

A study was made of the effects of argon ion bombardment of carbon thin films deposited onto WC and tool steels. Carbon thin film deposition was performed at various temperatures ranging from 200degC to 350degC, using C{sub 6}H{sub 6} gas. Argon ion beam bombardment of the films was carried out at an energy of 150 keV with a dose of 1x10{sup 16} ions cm{sup -2}. The hardness and adhesion of the films were measured by means of Knoop hardness and scratch tests respectively. The structure of the carbon films was estimated by laser Raman spectroscopy, and the relations were investigated between the mechanical properties and the structure of the films. The hardness of carbon thin films increases as their deposition temperature decreases; this tendency corresponds to the increase in amorphous structure estimated by Raman spectra. Argon ion bombardment results in constant hardness and fraction of amorphous structure. Argon ion beam bombardment of films prior to additional carbon deposition may cause the adhesion of the subsequently deposited films to improve. It is concluded that argon ion beam bombardment is useful for improving the properties of carbon films deposited onto WC and tool steels. (orig.).

Effects of ion beam bombardment of carbon thin films deposited onto tungsten carbide and tool steels

International Nuclear Information System (INIS)

Awazu, Kaoru; Yoshida, Hiroyuki; Watanabe, Hiroshi; Iwaki, Masaya; Guzman, L.

1992-01-01

A study was made of the effects of argon ion bombardment of carbon thin films deposited onto WC and tool steels. Carbon thin film deposition was performed at various temperatures ranging from 200degC to 350degC, using C 6 H 6 gas. Argon ion beam bombardment of the films was carried out at an energy of 150 keV with a dose of 1x10 16 ions cm -2 . The hardness and adhesion of the films were measured by means of Knoop hardness and scratch tests respectively. The structure of the carbon films was estimated by laser Raman spectroscopy, and the relations were investigated between the mechanical properties and the structure of the films. The hardness of carbon thin films increases as their deposition temperature decreases; this tendency corresponds to the increase in amorphous structure estimated by Raman spectra. Argon ion bombardment results in constant hardness and fraction of amorphous structure. Argon ion beam bombardment of films prior to additional carbon deposition may cause the adhesion of the subsequently deposited films to improve. It is concluded that argon ion beam bombardment is useful for improving the properties of carbon films deposited onto WC and tool steels. (orig.)

Effect of ion beam bombardment on the carbide in M2 steel modified by ion-beam-assisted deposition

Energy Technology Data Exchange (ETDEWEB)

Li, X.Y.; Wang, F.J.; Wang, Y.K. (Dept. of Materials Engineering, Dalian Univ. of Technology (China)); Ma, T.C. (National Lab. of Materials Modification by Beam Three, Dalian (China))

1991-10-30

Transmission electron microscopy was used to study the effect of nitrogen ion bombardment with different doses on the carbides in M2 high speed steel as the nitrogen ions penetrated into the nitride films during ion-beam-assisted deposition. With different doses of nitrogen, alterations in the morphological characteristics of the carbide M6C at the interface were observed. With lower doses, knitting-like contrast within the carbide showed subboundary structure defects in M6C. With increasing dose, the substructure defects were broken up into small fragments owing to heavy bombardment. The microstructures of carbides at the interface damaged by nitrogen ions are discussed in detail. (orig.).

Effect of Ni +-ION bombardment on nickel and binary nickel alloys

Science.gov (United States)

Roarty, K. B.; Sprague, J. A.; Johnson, R. A.; Smidt, F. A.

1981-03-01

Pure nickel and four binary nickel alloys have been subjected to high energy Ni ion bombardment at 675, 625 and 525°C. After irradiation, each specimen was studied by transmission electron microscopy. The pure nickel control was found to swell appreciably (1 to 5%) and the Ni-Al and the Ni-Ti samples were found to swell at all temperatures, but to a lesser degree (0.01 to 0.35%). The Ni-Mo contained a significant density of voids only at 525° C, while swelling was suppressed at all temperatures in the Ni-Si alloy. The dislocation structure progressed from loops to tangles as temperature increased in all materials except the Ni-Ti, in which there was an absence of loops at all temperatures. Dislocation densities decreased as temperature increased in all samples. These results do not correlate well with the relative behavior of the same alloys observed after neutron irradiation at 455°C. The differences between these two sets of data appear to be caused by different mechanisms controlling void nucleation in ion and neutron irradiation of these alloys.

Effect of the ion bombardment on the apparent barrier height in GaAs Schottky junctions

International Nuclear Information System (INIS)

Horvath, Zs. J.

1994-01-01

The bombardment of the semiconductor with different particles often results in the change of the doping concentration at the semiconductor surface. In this paper the effects of this near-interface concentration change on the apparent and real Schottky barrier heights are discussed. Experimental results obtained in GaAs Schottky junctions prepared on ion-bombarded semiconductor surfaces are analysed, and it is shown that their electrical characteristics are strongly influenced by the near-interface concentration change due to the ion bombardment. (author). 36 refs., 2 figs

Low-energy ion beam bombardment effect on the plant-cell-envelope mimetic membrane for DNA transfer

International Nuclear Information System (INIS)

Prakrajang, K.; Sangwijit, K.; Anuntalabhochai, S.; Wanichapichart, P.; Yu, L.D.

2012-01-01

This study is a systematic analysis of the mechanisms involved in ion-beam induced DNA transfer, an important application of ion beam biotechnology. Cellulose membranes were used to mimic the plant cell envelope. Ion beams of argon (Ar) or nitrogen (N) at an energy of 25 keV bombarded the cellulose membranes at fluences ranging from 10 15 to 10 16 ions/cm 2 . The damage to the ion-beam-bombarded membranes was characterized using infrared spectroscopy, a micro tensile test and scanning electron microscopy (SEM). Chain scission was the dominant radiation damage type in the membrane. DNA diffusion across the membrane was significantly increased after ion beam bombardment. The increase in DNA transfer is therefore attributed to chain scission, which increases the permeability by increasing the number of pores in the membrane.

Ion bombardment effects on surface states in selected oxide systems: rutile and alkaline earth titanates

International Nuclear Information System (INIS)

Gruen, D.M.

1978-01-01

In this paper, the nature of the surface states of n-type TiO 2 and SrTiO 3 is discussed and the role of ion bombardment in modifying the properties of these states is elucidated. Insofar as possible, the interrelationships between oxide nonstoichiometry, surface states, ion bombardment effects and photoelectrolysis are explored

Alteration of the UV-visible reflectance spectra of H2O ice by ion bombardment

Science.gov (United States)

Sack, N. J.; Boring, J. W.; Johnson, R. E.; Baragiola, R. A.; Shi, M.

1991-01-01

Satellite in the Jovian and Saturnian system exhibit differences in reflectivity between their 'leading' and 'trailing' surfaces which can affect the local vapor pressure. Since these differences are thought to be due to differences in the flux of bombarding magnetospheric ions, the influence of ion impact on the UV-visible reflectance of water ice surfaces (20-90 K) by keV ion bombardment was studied. An observed decrease in reflectance in the UV is attributed to rearrangement processes that affect the physical microstructure and surface 'roughness'. The ratio in reflectance of bombarded to freshly deposited films is compared to the ratio of the reflectance of the leading and trailing hemispheres for Europa and Ganymede.

Ion peening and stress relaxation induced by low-energy atom bombardment of covalent solids

International Nuclear Information System (INIS)

Koster, Monika; Urbassek, Herbert M.

2001-01-01

Using molecular-dynamics simulation, we study the buildup and relaxation of stress induced by low-energy (≤150 eV) atom bombardment of a target material. The effect is brought out most clearly by using an initially compressed specimen. As target material, we employ Si, based on the Tersoff potential. By varying the bond strength in the potential, we can specifically study its effect on damage production and stress changes. We find that in general, stress is relaxed by the atom bombardment; only for low bombarding energies and strong bonds, atom bombardment increases stress. We rationalize this behavior by considering the role of energized atoms and of recoil-implanted target atoms

Low-energy ion beam bombardment effect on the plant-cell-envelope mimetic membrane for DNA transfer

Energy Technology Data Exchange (ETDEWEB)

Prakrajang, K., E-mail: k.prakrajang@gmail.com [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Sangwijit, K.; Anuntalabhochai, S. [Molecular Biology Laboratory, Department of Biology, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Wanichapichart, P. [Membrane Science and Technology Research Center, Department of Physics, Faculty of Science, Prince of Songkla University, Hat Yai, Songkla 90112 (Thailand); Yu, L.D., E-mail: yuld@fnrf.science.cmu.ac.th [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

2012-09-01

This study is a systematic analysis of the mechanisms involved in ion-beam induced DNA transfer, an important application of ion beam biotechnology. Cellulose membranes were used to mimic the plant cell envelope. Ion beams of argon (Ar) or nitrogen (N) at an energy of 25 keV bombarded the cellulose membranes at fluences ranging from 10{sup 15} to 10{sup 16} ions/cm{sup 2}. The damage to the ion-beam-bombarded membranes was characterized using infrared spectroscopy, a micro tensile test and scanning electron microscopy (SEM). Chain scission was the dominant radiation damage type in the membrane. DNA diffusion across the membrane was significantly increased after ion beam bombardment. The increase in DNA transfer is therefore attributed to chain scission, which increases the permeability by increasing the number of pores in the membrane.

Room-Temperature Growth of SiC Thin Films by Dual-Ion-Beam Sputtering Deposition

Directory of Open Access Journals (Sweden)

C. G. Jin

2008-01-01

Full Text Available Silicon carbide (SiC films were prepared by single and dual-ion-beamsputtering deposition at room temperature. An assisted Ar+ ion beam (ion energy Ei = 150 eV was directed to bombard the substrate surface to be helpful for forming SiC films. The microstructure and optical properties of nonirradicated and assisted ion-beam irradicated films have been characterized by transmission electron microscopy (TEM, scanning electron microscopy (SEM, Fourier transform infrared spectroscopy (FTIR, and Raman spectra. TEM result shows that the films are amorphous. The films exposed to a low-energy assisted ion-beam irradicated during sputtering from a-SiC target have exhibited smoother and compacter surface topography than which deposited with nonirradicated. The ion-beam irradicated improves the adhesion between film and substrate and releases the stress between film and substrate. With assisted ion-beam irradicated, the density of the Si–C bond in the film has increased. At the same time, the excess C atoms or the size of the sp2 bonded clusters reduces, and the a-Si phase decreases. These results indicate that the composition of the film is mainly Si–C bond.

High Energy Ion Bombardment Simulation Facility at the University of Pittsburgh

International Nuclear Information System (INIS)

McGruer, J.N.; Choyke, W.J.; Doyle, N.J.; Spitznagel, J.A.

1975-01-01

The High Energy Ion Bombardment Simulation (HEIBS) Facility located at the University of Pittsburgh is now operational. The E-22 tandem accelerator of the Nuclear Physics Laboratory, fitted with a UNIS source, provides the heavy high energy ions. An auxiliary Van de Graaff accelerator is used for the simultaneous production of He ions. Special features of the simulation laboratory are reported

Continuum radiation emitted from transition metals under ion bombardment

International Nuclear Information System (INIS)

El Boujlaidi, A.; Kaddouri, A.; Ait El Fqih, M.; Hammoum, K.; Aouchiche, H.

2012-01-01

Optical emission of transition metals has been studied during 5 keV Kr + ions bombardment within and without oxygen atmosphere in the colliding chamber. The observed spectra consist of a series of discrete lines superimposed on a broad continuum. Generally, the emission intensity was influenced by the presence of oxygen giving rise to transient effects as well as to an increase in the line intensity. The behaviours of spectral lines were successfully explained in term of electron-transfer process between the excited sputtered atom and the solid surface. In this work, we have focused our study on the continuous radiation emitted during ion bombardment. The experimental results suggest that the continuum emission depends on the nature of metal and very probably related to its electronic structure. The collective deactivation of 3d-shell electrons appears to play a role in the emission of this radiation. The observed enhancement in the presence of oxygen is probably due to a significant contribution of the oxide molecules. (authors)

Ion bombardment induced smoothing of amorphous metallic surfaces: Experiments versus computer simulations

International Nuclear Information System (INIS)

Vauth, Sebastian; Mayr, S. G.

2008-01-01

Smoothing of rough amorphous metallic surfaces by bombardment with heavy ions in the low keV regime is investigated by a combined experimental-simulational study. Vapor deposited rough amorphous Zr 65 Al 7.5 Cu 27.5 films are the basis for systematic in situ scanning tunneling microscopy measurements on the smoothing reaction due to 3 keV Kr + ion bombardment. The experimental results are directly compared to the predictions of a multiscale simulation approach, which incorporates stochastic rate equations of the Langevin type in combination with previously reported classical molecular dynamics simulations [Phys. Rev. B 75, 224107 (2007)] to model surface smoothing across length and time scales. The combined approach of experiments and simulations clearly corroborates a key role of ion induced viscous flow and ballistic effects in low keV heavy ion induced smoothing of amorphous metallic surfaces at ambient temperatures

Cesium ion bombardment of metal surfaces

International Nuclear Information System (INIS)

Tompa, G.S.

1986-01-01

The steady state cesium coverage due to cesium ion bombardment of molybdenum and tungsten was studied for the incident energy range below 500 eV. When a sample is exposed to a positive ion beam, the work function decreases until steady state is reached with a total dose of less than ≅10 16 ions/cm 2 , for both tungsten and molybdenum. A steady state minimum work function surface is produced at an incident energy of ≅100 eV for molybdenum and at an incident energy of ≅45 eV for tungsten. Increasing the incident energy results in an increase in the work function corresponding to a decrease in the surface coverage of cesium. At incident energies less than that giving the minimum work function, the work function approaches that of cesium metal. At a given bombarding energy the cesium coverage of tungsten is uniformly less than that of molybdenum. Effects of hydrogen gas coadsorption were also examined. Hydrogen coadsorption does not have a large effect on the steady state work functions. The largest shifts in the work function due to the coadsorption of hydrogen occur on the samples when there is no cesium present. A theory describing the steady-state coverage was developed is used to make predictions for other materials. A simple sticking and sputtering relationship, not including implantation, cannot account for the steady state coverage. At low concentrations, cesium coverage of a target is proportional to the ratio of (1 - β)/γ where β is the reflection coefficient and γ is the sputter yield. High coverages are produced on molybdenum due to implantation and low backscattering, because molybdenum is lighter than cesium. For tungsten the high backscattering and low implantation result in low coverages

Heavy-ion induced desorption yields of cryogenic surfaces bombarded with 4.2 MeV/u lead ions

CERN Document Server

Mahner, E; Evans, L; Kollmus, H; Küchler, D; Scrivens, R; Severin, D; Wengenroth, M; CERN. Geneva. ATS Department

2011-01-01

The ion-induced desorption experiment, installed in the CERN Heavy-Ion Accelerator LINAC 3, has been used to study the dynamic outgassing of cryogenic surfaces. Two different targets, bare and goldcoated copper, were bombarded under perpendicular impact with 4.2 MeV/u Pb54+ ions. Partial pressure rises of H2, CH4, CO, and CO2 and effective desorption yields were measured at 300, 77, and 6.3 K using single shot and continuous ion bombardment techniques. We find that the heavy-ion-induced desorption yield is temperature dependent and investigate the influence of CO gas cryosorbed at 6.3 K. The gain in desorption yield reduction at cryogenic temperature vanishes after several monolayers of CO are cryosorbed on both targets. In this paper we describe the new cryogenic target assembly, the temperature-dependent pressure rise, desorption yield, and gas adsorption measurements.

Ion bombardment damage in a modified Fe-9Cr-1Mo steel

International Nuclear Information System (INIS)

Farrell, K.; Lee, E.H.

1984-01-01

A normalized-and-tempered Fe-9Cr-1Mo steel, with small Nb and V additions, was bombarded with 4-MeV iron ions to 100 dpa at 400, 450, 500, 550, and 600 0 C. Major damage feature was dislocation tangles which coarsened with increasing bombardment temperature. Sparse cavities were heterogeneously distributed at 500 and 550 0 C. Incorporation of helium and deuterium simultaneously in the bombardments at rates of 10 and 45 appM/dpa, respectively, introduced very high concentrations of small cavities at all temperatures, many of them on grain boundaries. These cavities were shown to be promoted by helium. A small fraction of the matrix cavities exhibited bias-driven growth at 500 and 550 0 C, with swelling 0 C higher than the peak swelling temperature found in neutron irradiations, which is compatible with the higher damage rate used in the ion bombardments. High concentrations of subgrain boundaries and dislocations resulting from the heat treatment, and unbalanced cavity and dislocation sink strengths in the damage structures contribute to the swelling resistance. Such resistance may not be permanent. High densities of bubbles on grain boundaries indicate a need for helium embrittlement tests

Ion bombardment effect on surface state of metal

International Nuclear Information System (INIS)

Vaulin, E.P.; Georgieva, N.E.; Martynenko, T.P.

1990-01-01

The effect of slow argon ion bombardment on the surface microstructure of polycrystalline copper as well as the effect of surface state on sputtering of D-16 polycrystalline alloy are experimentally studied. Reduction of copper surface roughness is observed. It is shown that the D-16 alloy sputtering coefficient is sensitive to the surface state within the limits of the destructed surface layer

Boron lattice location in room temperature ion implanted Si crystal

International Nuclear Information System (INIS)

Piro, A.M.; Romano, L.; Mirabella, S.; Grimaldi, M.G.

2005-01-01

The B lattice location in presence of a Si-self-interstitial (I Si ) supersaturation, controlled by energetic proton bombardment, has been studied by means of ion channelling and massive Monte Carlo simulations. B-doped layers of Si crystals with a B concentration of 1 x 10 2 B/cm 3 were grown by Molecular Beam Epitaxy. Point defect engineering techniques, with light energetic ion implants, have been applied to generate an I Si uniform injection in the electrically active layer. The displacement of B atoms out of substitutional lattice sites was induced by 650 keV proton irradiations at room temperature (R.T.) and the resultant defect configuration was investigated by ion channelling and Nuclear Reaction Analysis (NRA) techniques. Angular scans were measured both through and axes along the (1 0 0) plane using the 11 B(p,α) 8 Be nuclear reaction at 650 keV proton energy. Monte Carlo simulated angular scans were calculated considering a variety of theoretical defect configurations, supported by literature, and compared with experimental data. Our experimental scans can be fitted by a linear combination of small (0.3 A) and large B displacements (1.25 A) along the direction, compatible with the B-dumbbell oriented along as proposed by ab initio calculations

The effects of thermal annealing on iron bombarded InP/InGaAs multilayer structures

International Nuclear Information System (INIS)

Subramaniam, S.C.; Rezazadeh, A.A.

2006-01-01

The effects of Fe-ion bombardment at 77 K (cold) and room temperature (RT) into single layer InGaAs, InP and multilayer InP/InGaAs HBT structures have been investigated. Annealing characteristics and RF dissipation loss measurements of Fe-ion bombarded samples at 77 K indicated good electrical isolation in n-, p-type InGaAs materials and InP/InGaAs HBT structures. Thermally stable (up to 250 deg. C) high sheet resistance (R sh ) of ∼5 x 10 6 Ω/sq has been achieved on these samples while higher R sh of ∼10 7 Ω/sq was obtained for the n-InP materials bombarded with similar conditions. Dissipation losses of 1.7 dB/cm at 10 GHz and 2.8 dB/cm at 40 GHz have been measured for the cold Fe-ion bombarded InP-based HBT structures. This result is similar to those obtained for an un-bombarded S.I. InP substrate, indicating good electrical isolation. We have also determined electron trapping levels by thermal annealing for the cold and RT Fe-ion bombarded samples. It is shown that the high resistivity achieved in the cold implanted InGaAs layer is most likely due to the creation of mid-bandgap defect levels (E C - 0.33) eV, which are created only in the cold Fe-ion bombardment. The DC isolation and RF dissipation loss analysis have been used to identify a suitable bombardment scheme for the fabrication of planar InP/InGaAs HBTs

Considerations about projectile and target X-rays induced during heavy ion bombardment

Science.gov (United States)

Fernandes, F.; Bauer, D. V.; Duarte, A.; Ferrari, T. M.; Niekraszewicz, L. A. B.; Amaral, L.; Dias, J. F.

2018-02-01

In this work we present some results concerning the X-rays emitted by heavy ions during target bombardment. In this case, Cl4+ and Cl5+ ions with energies from 4 MeV to 10 MeV were employed to irradiate vitreous carbon planchets. Moreover, total X-ray production cross sections of titanium X-rays induced by chlorine ions were obtained as well for the same energy range. Only inner shell transitions were considered in the present work. The titanium target consisted of a thin film deposited over vitreous carbon planchets. The results indicate that the projectile X-ray yields increase as a function of the bombarding energy for the present energy range. Effects due to projectile charge state appears to be of minor importance at these low ion velocities. It is shown that a simple exponential function can represent the continuum background of such complex spectra. The chlorine transition rates Kβ/Kα obtained from chlorine acting as a projectile interacting with a carbon target are about half the value when compared to the chlorine Kβ/Kα ratios obtained when a LiCl target is bombarded with C+ and C3+ ions with energies from 2 MeV to 6 MeV. As far as the total X-ray production cross sections of Ti induced by chlorine ions are concerned, the ECPSSR theory underestimates the Ti total X-rays production cross sections by several orders of magnitude. The role of electron capture and possible mechanisms responsible for these effects are discussed.

Formation of a highly doped ultra-thin amorphous carbon layer by ion bombardment of graphene

Science.gov (United States)

Piotr Michałowski, Paweł; Pasternak, Iwona; Ciepielewski, Paweł; Guinea, Francisco; Strupiński, Włodek

2018-07-01

Ion bombardment of graphene leads to the formation of defects which may be used to tune properties of the graphene based devices. In this work, however, we present that the presence of the graphene layer on a surface of a sample has a significant impact on the ion bombardment process: broken sp2 bonds react with the incoming ions and trap them close to the surface of the sample, preventing a standard ion implantation. For an ion bombardment with a low impact energy and significant dose (in the range of 1014 atoms cm‑2) an amorphization of the graphene layer is observed but at the same time, most of the incoming ions do not penetrate the sample but stop at the surface, thus forming a highly doped ultra-thin amorphous carbon layer. The effect may be used to create thin layers containing desired atoms if no other technique is available. This approach is particularly useful for secondary ion mass spectrometry where a high concentration of Cs at the surface of a sample significantly enhances the negative ionization probability, allowing it to reach better detection limits.

Ion bombardment effects on the fatigue life of stainless steel under simulated fusion first wall conditions

International Nuclear Information System (INIS)

Kohse, G.; Harling, O.K.

1983-01-01

Pressurized tube specimens have been exposed to simultaneous multi-energy surface ion bombardment, fast neutron irradiation and stress and temperature cycling, in a simulation of a possible fusion reactor first wall environment. After ion bombardments equivalent to months-years of reactor operation and up to 30,000 cycles, no detrimental effects on post-irradiation fatigue life were found. The ion damage is found to enhance surface cracking, but this effect is limited to the several micron surface layer in which the ions are implanted

CoSi2 growth on Si(001) by reactive deposition epitaxy: Effects of high-flux, low-energy ion irradiation

International Nuclear Information System (INIS)

Lim, C. W.; Greene, J. E.; Petrov, I.

2006-01-01

CoSi 2 layers, CoSi 2 (parallel sign)(001) Si and [100] CoSi 2 (parallel sign)[100] Si , contain fourfold symmetric (111) twinned domains oriented such that (221) CoSi 2 (parallel sign)(001) Si and CoSi 2 (parallel sign)[110] Si . We demonstrate that high-flux low-energy (E Ar + =9.6 eV) Ar + ion irradiation during deposition dramatically increases the area fraction f u of untwinned regions from 0.17 in films grown under standard magnetically balanced conditions in which the ratio J Ar + /J Co of the incident Ar + to Co fluxes is 1.4 to 0.72 with J Ar + /J Co =13.3. TEM analyses show that the early stages of RDE CoSi 2 (001) film growth proceed via the Volmer-Weber mode with independent nucleation of both untwinned and twinned islands. Increasing J Ar + /J Co results in larger values of both the number density and area of untwinned with respect to twinned islands. The intense Ar + ion bombardment creates additional low-energy adsorption sites that favor the nucleation of untwinned islands while collisionally enhancing Co surface mobilities which, in turn, increases the probability of itinerant Co adatoms reaching these sites

Enhancement of the secondary ion emission from Si by O/sub 2 and H/sub 2/O adsorption

International Nuclear Information System (INIS)

Huan, C.H.; Wee, A.T.S.; Tan, K.L.

1992-01-01

The positive and negative secondary ion emission of Si are examined as a function of O/sub 2 and H/sub 2/O surface coverage under conditions of simultaneous adsorption and Ar/sup+ ion bombardment. It is found that the ion-molecule mechanism accounts for the adsorbate-induced signals and that yield enhancement by H/sub 2/O adsorption is less effective than O/sub 2 adsorption. (authors)

In-Situ atomic force microscopic observation of ion beam bombarded plant cell envelopes

International Nuclear Information System (INIS)

Sangyuenyongpipat, S.; Yu, L.D.; Brown, I.G.; Seprom, C.; Vilaithong, T.

2007-01-01

A program in ion beam bioengineering has been established at Chiang Mai University (CMU), Thailand, and ion beam induced transfer of plasmid DNA molecules into bacterial cells (Escherichia coli) has been demonstrated. However, a good understanding of the fundamental physical processes involved is lacking. In parallel work, onion skin cells have been bombarded with Ar + ions at energy 25 keV and fluence1-2 x 10 15 ions/cm 2 , revealing the formation of microcrater-like structures on the cell wall that could serve as channels for the transfer of large macromolecules into the cell interior. An in-situ atomic force microscope (AFM) system has been designed and installed in the CMU bio-implantation facility as a tool for the observation of these microcraters during ion beam bombardment. Here we describe some of the features of the in-situ AFM and outline some of the related work

Additional ion bombardment in PVD processes generated by a superimposed pulse bias voltage

International Nuclear Information System (INIS)

Olbrich, W.; Kampschulte, G.

1993-01-01

The superimposed pulse bias voltage is a tool to apply an additional ion bombardment during deposition in physical vapour deposition (PVD) processes. It is generated by the combination of a d.c. ground voltage and a higher d.c. pulse voltage. Using a superimposed pulse bias voltage in ion-assisted PVD processes effects an additional all-around ion bombardment on the surface with ions of higher energy. Both metal and reactive or inert-gas ions are accelerated to the surface. The basic principles and important characteristics of this newly developed process such as ion fluxes or deposition rates are shown. Because of pulsing the high voltage, the deposition temperature does not increase much. The adhesion, structure, morphology and internal stresses are influenced by these additional ion impacts. The columnar growth of the deposited films could be suppressed by using the superimposed pulse bias voltage without increasing the deposition temperature. Different metallizations (Cr and Cu) produced by arc and sputter ion plating are investigated. Carbon-fibre-reinforced epoxy are coated with PVD copper films for further treatment in electrochemical processes. (orig.)

Friction and wear measurements of sputtered MoS/sub x/ films amorphized by ion bombardment

International Nuclear Information System (INIS)

Mikkelsen, N.J.; Chevallier, J.; Soerensen, G.; Straede, C.A.

1988-01-01

The present study presents an experimental evidence for amorphization of rf sputtered MoS/sub x/ films by ion bombardment. Even at low doses (3 x 10 15 ions/cm 2 ) of 400 keV argon ions a complete amorphization was confirmed by x-ray diffraction analysis and transmission electron microscopy. As a result of the ion bombardment the film density increased 100% to almost the bulk value for MoS 2 . The friction coefficient for ion beam amorphized MoS/sub x/ was measured to be 0.04 in agreement with the values reported for crystalline films but disagreeing considerably with the friction coefficient of 0.4 previously reported for amorphous films

Influence of ion bombardment induced patterning of exchange bias in pinned artificial ferrimagnets on the interlayer exchange coupling

Energy Technology Data Exchange (ETDEWEB)

Schmalhorst, Jan; Reiss, Guenter; Hoenik, V. [Thin Films and Nanostructures, Department of Physics, Univ. Bielefeld (Germany); Weis, Tanja; Engel, Dieter; Ehresmann, Arno [Institute of Physics and Center for Interdisciplinary Nanostructure Science and Technology, Kassel Univ. (Germany)

2007-07-01

Artificial ferrimagnets (AFi) have many applications as, e.g., pinned reference electrodes in magnetic tunnel junctions. It is known that the application of ion bombardment induced magnetic patterning with He ions on a single layer reference electrode of magnetic tunnel junctions is possible. For some applications a combination of ion bombardment induced magnetic patterning and artificial ferrimagnets as a reference electrode is desirable. The effect of ion bombardment induced magnetic patterning on pinned artificial ferrimagnets with a Ru interlayer which is frequently used in magnetic tunnel junctions as well as pinned AFis with a Cu interlayer has been tested. Special attention has been given to the question whether the antiferromagnetic interlayer exchange coupling can withstand the ion dose necessary to turn the exchange bias.

On the modification of metal/ceramic interfaces by low energy ion/atom bombardment during film growth

International Nuclear Information System (INIS)

Rigsbee, J.M.; Scott, P.A.; Knipe, R.K.; Hock, V.F.

1986-01-01

Elemental Cu and Ti films have been deposited onto ceramic substrates with a plasma-aided physical vapor deposition (ion-plating) process. This paper discusses how the structure and chemistry of the metallic film and the metal/ceramic interface are modified by low energy ion and neutral atom bombardment. Emphasis is placed on determining how low energy ion/neutral atom bombardment affects the strength of the metal/ceramic interface. Analyses of the film, interface and substrate regions have employed scanning Auger microprobe, secondary ion mass spectroscopy, SEM/STEM-energy dispersive X-ray and TEM/STEM imaging and microdiffraction techniques. (Auth.)

Study on the growth of aligned carbon nanotubes controlled by ion bombardment

International Nuclear Information System (INIS)

Wang Biben; Zhang Bing; Zheng Kun; Hao Wei; Wang Wanlu; Liao Kejun

2004-01-01

Aligned carbon nanotubes were prepared by plasma-enhanced hot filament chemical vapor deposition using CH 4 , H 2 and NH 3 as reaction gases. It was investigated how different negative bias affects the growth of aligned carbon nanotubes. The results indicate that the average diameter of the aligned carbon nanotubes is reduced and the average length of the aligned carbon nanotubes is increased with increasing negative bias. Because of the occurrence of glow discharge, a cathode sheath forms near the substrate surface, and a number of ions are produced in it, and a very strong electrical field builds up near the substrate surface. Under the effect of the field, the strong bombardment of ions on the substrate surface will influence the growth of aligned carbon nanotubes. Combined with related theories, authors have analyzed and discussed the ion bombardment effects on the growth of the aligned carbon nanotudes

Calculations on displacement damage and its related parameters for heavy ion bombardment in reactor materials

International Nuclear Information System (INIS)

Sone, Kazuho; Shiraishi, Kensuke

1975-04-01

The depth distribution of displacement damage expressed in displacements per atom (DPA) in reactor materials such as Mo, Nb, V, Fe and Ni bombarded by energetic nitrogen, argon and self ions with incident energy below 2 MeV was calculated following the theory developed by Lindhard and co-workers for the partition of energy as an energetic ion slowing down. In this calculation, energy loss due to electron excitation was taken into account for the atomic collision cascade after the primary knock-on process. Some parameters indispensable for the calculation such as energy loss rate, damage efficiency, projected range and its straggling were tabulated as a function of incident ion energy of 20 keV to 2 MeV. The damage and parameters were also calculated for 2 MeV nickel ions bombarding Fe targets. In this case, the DPA value is of 40--75% overestimated in a calculation disregarding electronic energy loss for primary knock-on atoms. The formula proposed in this report is significant for calculations on displacement damage produced by heavy ion bombardment as a simulation of high fluence fast neutron damage. (auth.)

Calculations on displacement damage and its related parameters for heavy ion bombardment in reactor materials

Energy Technology Data Exchange (ETDEWEB)

Sone, K; Shiraishi, K

1975-04-01

The depth distribution of displacement damage expressed in displacements per atom (DPA) in reactor materials such as Mo, Nb, V, Fe and Ni bombarded by energetic nitrogen, argon and self ions with incident energy below 2 MeV was calculated following the theory developed by Lindhard and co-workers for the partition of energy as an energetic ion slowing down. In this calculation, energy loss due to electron excitation was taken into account for the atomic collision cascade after the primary knock-on process. Some parameters indispensable for the calculation such as energy loss rate, damage efficiency, projected range and its straggling were tabulated as a function of incident ion energy of 20 keV to 2 MeV. The damage and parameters were also calculated for 2 MeV nickel ions bombarding Fe targets. In this case, the DPA value is of 40--75% overestimated in a calculation disregarding electronic energy loss for primary knock-on atoms. The formula proposed in this report is significant for calculations on displacement damage produced by heavy ion bombardment as a simulation of high fluence fast neutron damage.

Controllable fabrication of amorphous Si layer by energetic cluster ion bombardment

Czech Academy of Sciences Publication Activity Database

Lavrentiev, Vasyl; Vorlíček, Vladimír; Dejneka, Alexandr; Chvostová, Dagmar; Jäger, Aleš; Vacík, Jiří; Jastrabík, Lubomír; Naramoto, H.; Narumi, K.

2013-01-01

Roč. 98, SI (2013), s. 49-55 ISSN 0042-207X R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:68378271 ; RVO:61389005 Keywords : energetic cluster s * silicon * surface modification * amorphization * nanostructure * Raman scattering * ion channeling Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders; BM - Solid Matter Physics ; Magnetism (FZU-D) Impact factor: 1.426, year: 2013 http://ac.els-cdn.com/S0042207X13001759/1-s2.0-S0042207X13001759-main.pdf?_tid=04e9c946-21dd-11e3-b076-00000aacb361&acdnat=1379672070_859355b2850a09ac74bc8ff413e35dda

Comments on Auger electron production by Ne/sup +/ bombardment of surfaces

Energy Technology Data Exchange (ETDEWEB)

Pepper, S V; Ferrante, J [National Aeronautics and Space Administration, Cleveland, OH (USA). Lewis Research Center

1979-09-01

In this letter, the authors first report rather conclusive experimental evidence showing that the Ne Auger signal is due to asymmetric Ne-metal collisions and not symmetric Ne-Ne collisions. Next it is shown that the Ne Auger signal is in fact observable by Ne/sup +/ bombardment of Si and with signal strength comparable to that of the Si Auger signal for 3 keV incident ion energy. Finally, they comment on some trends in the relative amplitudes of the 21.9 and 25.1 eV Ne Auger signals as a function of incident ion energy and target species.

Suppression secondary electrons from target surface under pulsed ion beams bombardment

International Nuclear Information System (INIS)

Yang Zhen; Peng Yufei; Long Jidong; Lan Chaohui; Dong Pan; Shi Jinshui

2012-01-01

The producing mechanism of secondary electrons from target surface under ion beams bombardment is discussed. Several methods to suppress the secondary electrons in special vacuum devices and their advantages and disadvantages are introduced. The ways of using self-bias and curved surface target are proposed and verified in the experiment. The results show that the secondary electrons can be effectively suppressed when the self-bias is larger than 80 V. The secondary electron yield decreases by using curved surface target instead of flat target. The secondary electron yield calculated from the experimental data is about 0.67, which is slightly larger than the value (0.58) from the literature due to the impurities of the ion beam and target surface. The effect of suppressing the electron countercurrent by the self-bias method is analyzed. The result shows that the self-bias method can not only suppress the secondary electrons from target surface under ion beams bombardment, but also suppress the electron countercurrent resulting from the instability of the pulsed power source. (authors)

Nanofabrication on a Si surface by slow highly charged ion impact

International Nuclear Information System (INIS)

Tona, Masahide; Watanabe, Hirofumi; Takahashi, Satoshi; Nakamura, Nobuyuki; Yoshiyasu, Nobuo; Sakurai, Makoto; Terui, Toshifumi; Mashiko, Shinro; Yamada, Chikashi; Ohtani, Shunsuke

2007-01-01

We have observed surface chemical reactions which occur at the impact sites on a Si(1 1 1)-(7 x 7) surface and a highly oriented pyrolytic graphite (HOPG) surface bombarded by highly charged ions (HCIs) by using a scanning tunneling microscope (STM). Crater structures are formed on the Si(1 1 1)-(7 x 7) surface by single I 50+ -impacts. STM-observation for the early step of oxidation on the surface suggests that the impact site is so active that dangling bonds created by HCI impacts are immediately quenched by reaction with residual gas molecules. We show also the selective adsorption of organic molecules at a HCI-induced impact site on the HOPG surface

Films deposited from reactive sputtering of aluminum acetylacetonate under low energy ion bombardment

Energy Technology Data Exchange (ETDEWEB)

Battaglin, Felipe Augusto Darriba; Prado, Eduardo Silva; Cruz, Nilson Cristino da; Rangel, Elidiane Cipriano, E-mail: elidiane@sorocaba.unesp.br [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), Sorocaba, SP (Brazil). Lab. de Plasmas Tecnologicos; Caseli, Luciano [Universidade Federal de Sao Paulo (UNIFESP), Diadema, SP (Brazil). Instituto de Ciencias Ambientais, Quimicas e Farmaceuticas; Silva, Tiago Fiorini da; Tabacniks, Manfredo Harri [Universidade de Sao Paulo (USP), SP (Brazil). Instituto de Fisica

2017-07-15

Films were deposited from aluminum acetylacetonate (Al(acac)3 ) using a methodology involving reactive sputtering and low energy ion bombardment. The plasma was generated by the application of radiofrequency power to the powder containing electrode and simultaneously, negative pulses were supplied to the electrode where the substrates were attached. It was investigated the effect of the duty cycle of the pulses (Δ) on the properties of the coatings. Association of ion bombardment to the deposition process increased film thickness, structure reticulation and organic content. Ions from the deposition environment were implanted at the film-air interface or underneath it. Morphology and topography were altered depending on Δ. Considering the enhancement of Δ, it affected the flux of ions reaching the depositing interface and then the deposition rate, H content, crosslinking degree and surface microstructure. Alumina groups were detected in the infrared spectra, whereas the precipitation of amorphous alumina was confirmed by X-ray diffraction. (author)

Ion Back-Bombardment of GaAs Photocathodes Inside DC High Voltage Electron Guns

CERN Document Server

Grames, Joseph M; Brittian, Joshua; Charles, Daniel; Clark, Jim; Hansknecht, John; Lynn Stutzman, Marcy; Poelker, Matthew; Surles-Law, Kenneth E

2005-01-01

The primary limitation for sustained high quantum efficiency operation of GaAs photocathodes inside DC high voltage electron guns is ion back-bombardment of the photocathode. This process results from ionization of residual gas within the cathode/anode gap by the extracted electron beam, which is subsequently accelerated backwards to the photocathode. The damage mechanism is believed to be either destruction of the negative electron affinity condition at the surface of the photocathode or damage to the crystal structure by implantation of the bombarding ions. This work characterizes ion formation within the anode/cathode gap for gas species typical of UHV vacuum chambers (i.e., hydrogen, carbon monoxide and methane). Calculations and simulations are performed to determine the ion trajectories and stopping distance within the photocathode material. The results of the simulations are compared with test results obtained using a 100 keV DC high voltage GaAs photoemission gun and beamline at currents up to 10 mA D...

Measurement of electron emission due to energetic ion bombardment in plasma source ion implantation

Science.gov (United States)

Shamim, M. M.; Scheuer, J. T.; Fetherston, R. P.; Conrad, J. R.

1991-11-01

An experimental procedure has been developed to measure electron emission due to energetic ion bombardment during plasma source ion implantation. Spherical targets of copper, stainless steel, graphite, titanium alloy, and aluminum alloy were biased negatively to 20, 30, and 40 kV in argon and nitrogen plasmas. A Langmuir probe was used to detect the propagating sheath edge and a Rogowski transformer was used to measure the current to the target. The measurements of electron emission coefficients compare well with those measured under similar conditions.

Auger emission from solid surfaces bombarded with ions

International Nuclear Information System (INIS)

Grizzi, Oscar.

1986-01-01

The Auger electron emission from Be, Na, Mg, Al and Si bombarded with 0,5-20 KeV noble gas ions is studied. Sharp structures of the Auger electron spectra of Na and Be were identified. A Monte Carlo program was adapted to simulate the colision cascade in the solid, inner shell excitations and Auger decays. From the comparision of experimental and simulated Auger intensities, the relative role of symmetric and asymmetric collisions in Be K- and Al L-shell excitation were evaluated. In the case of Be, the discussion of the exciting processes to higher projectile energies was extended. To this end, the simulation to early measurements of Be K X-ray yields was applied. From this analysis, information about the variations of the fluorescence yield and outer-shell occupation numbers of Be with projectile energy was obtained. The study of the shape of the sharp Auger structures and their dependence with the energy and incidence projectile angle gives information about the collisional processes, inner hole lifetimes and Auger decays. From the evaluation of the energy and angular distribution of the excited sputtered atoms and the interaction between them and the metallic-surface, the energy shift distributions in the Auger energies were obtained. From the comparison of these distributions with the experimental atomic peaks, the main causes of the broadening of these peaks were determined. (M.E.L.) [es

Effect of Carbon Concentration on the Sputtering of Carbon-Rich SiC Bombarded by Helium Ions

Directory of Open Access Journals (Sweden)

Xinghao Liang

2018-02-01

Full Text Available Silicon carbide (SiC is considered as an important material for nuclear engineering due to its excellent properties. Changing the carbon content in SiC can regulate and control its elastic and thermodynamic properties, but a simulation study of the effect of carbon content on the sputtering (caused by the helium ions of SiC is still lacking. In this work, we used the Monte-Carlo and molecular dynamics simulation methods to study the effects of carbon concentration, incidence energy, incident angle, and target temperature on the sputtering yield of SiC. The results show that the incident ions’ energy and angle have a significant effect on sputtering yield of SiC when the carbon concentration in SiC is around 62 at %, while the target temperature has a little effect on the sputtering yield of SiC. Our work might provide theoretical support for the experimental research and engineering application of carbon fiber-reinforced SiC that be used as the plasma-facing material in tokamak fusion reactors.

Ion bombardment and adsorption studies on ilmenite (FeTiO3) by X-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

Schulze, P.D.

1983-01-01

The effects of 5 KeV argon and oxygen ion bombardment on FeTiO3 (ilmenite) at low temperatures have been studied using x-ray photoelectron spectroscopy (XPS). Also, using this same technique, the adsorption of O 2 , NO, N 2 O, and CO at 300 K and the adsorption of O 2 and D 2 O at 150K have been studied. Argon and oxygen ion bombardment of ilmenite have confirmed earlier studies on metal oxides that argon ions generally reduce the anion species while oxygen ions generally oxidize the anion species. The two iron states involved were Fe sup +2 and Fe sup O. The reduction of Ti sup +4 was not verified although a significant shift in the Ti(2p1,3) binding energies toward the metallic state was observed after oxygen ion bombardment at low temperatures. At temperatures above 150K, O 2 adsorbs dissociatively on ilmenite while D 2 O adsorbs molecularly below 170K. Above 300 K NO, N 2 O, and CO do not appear to adsorb dissociatively. Low temperature adsorption of D 2 O was found to be inhibited by predosing the ilmenite with O 2

Ion bombardment and adsorption studies on ilmenite (FeTiO3) by X-ray photoelectron spectroscopy

Science.gov (United States)

Schulze, P. D.

1983-01-01

The effects of 5 KeV argon and oxygen ion bombardment on FeTiO3 (ilmenite) at low temperatures have been studied using X-ray photoelectron spectroscopy (XPS). Also, using this same technique, the adsorption of O2, NO, N2O, and CO at 300 K and the adsorption of O2 and D2O at 150K have been studied. Argon and oxygen ion bombardment of ilmenite have confirmed earlier studies on metal oxides that argon ions generally reduce the anion species while oxygen ions generally oxidize the anion species. The two iron states involved were Fe sup +2 and Fe sup O. The reduction of Ti sup +4 was not verified although a significant shift in the Ti(2p1,3) binding energies toward the metallic state was observed after oxygen ion bombardment at low temperatures. At temperatures above 150K, O2 adsorbs dissociatively on ilmenite while D2O adsorbs molecularly below 170K. Above 300 K No, N2O, and CO do not appear to adsorb dissociatively. Low temperature adsorption of D2O was found to be inhibited by predosing the ilmenite with O2.

Nonlinear Amplitude Evolution During Spontaneous Patterning of Ion-Bombarded Si(001)

International Nuclear Information System (INIS)

Chason, Eric; Erlebacher, Jonah; Aziz, Michael J.; Floro, Jerold A.; Sinclair, Michael B.

1999-01-01

The time evolution of the amplitude of periodic nanoscale ripple patterns formed on Ar+ sputtered Si(OOl ) surfaces was examined using a recently developed in situ spectroscopic technique. At sufficiently long times, we find that the amplitude does not continue to grow exponentially as predicted by the standard Bradley-Harper sputter rippling model. In accounting for this discrepancy, we rule out effects related to the concentration of mobile species, high surface curvature, surface energy anisotropy, and ion-surface interactions. We observe that for all wavelengths the amplitude ceases to grow when the width of the topmost terrace of the ripples is reduced to approximately 25 nm. This observation suggests that a short circuit relaxation mechanism limits amplitude . growth. A strategy for influencing the ultimate ripple amplitude is discussed

Oxygen flooding and sample cooling during depth profiling of HfSiON thin films

Energy Technology Data Exchange (ETDEWEB)

Miwa, Shiro [Materials Analysis Center, Materials Laboratories, Sony Corporation, 4-16-1 Okata, Atsugi 243-0021 (Japan)], E-mail: Shiro.Miwa@jp.sony.com

2008-12-15

A combination of oxygen flooding and. Cs primary ion bombardment can suppress the enhancement of the secondary ion signal at the surface and at the interface of a thin HfSiON layer on a Si substrate. The surface concentration of both Cs and O during Cs primary ion bombardment with oxygen flooding was higher than that without oxygen flooding, as confirmed by X-ray photoelectron spectroscopy. When the sample was cooled to about -150 deg. C, the enhancement of the secondary ion signal could be suppressed at a lower oxygen pressure.

Conical surface textures formed by ion bombarding 2% Be-Cu alloy

International Nuclear Information System (INIS)

Panitz, J.K.G.

1991-01-01

A homogeneous, micrometer-sized conical surface texture forms on 2% Be-Cu alloy which is bombarded with an argon beam produced by a Kaufman ion source. The dimensions of the features that form depend strongly on argon energy (from 250 to 1500 eV); argon fluence (10 19 to 10 20 ions cm -2 ); and argon flux (0.1 to 1 mA cm -2 ). The texture morphology depends less strongly on the background ambient (Mo versus graphite), earlier alloy heat treatments and the temperature during bombardment (100 o C and 450 o C). As the texture matures with increasing fluence, the number of large features increases at the expense of the number of small features. The observed relationship between texture formation and ion flux suggests that the evolution of these features is not adequately described by theories predicting that the mature conical side-wall angle is related to the angle of the maximum sputtering yield. These textured surfaces can be coated with other metals for a variety of possible applications including pulsed power Li + beam anodes; cold cathode field emission devices; optical absorbers and catalysis supports. (author)

Conical surface textures formed by ion bombarding 2% Be Cu alloy

International Nuclear Information System (INIS)

Panitz, J.K.G.

1990-01-01

A homogeneous, micrometer-sized conical surface texture forms on 2% Be-Cu alloy which is bombarded with an argon beam produced by a Kaufman ion source. The dimensions of the features that form strongly depend on: (1) argon energy (from 250 to 1500 eV), (2) fluence (10 19 to 10 20 ions/cm 2 ), and (3) flux (0.1 to 1 mA/cm 2 ). The texture morphology depends less strongly on the background ambient (Mo vs graphite), earlier alloy heat treatments and the temperature during bombardment (100 degree C and 450 degree C). As the texture matures with increasing fluence, the number of large features increases at the expense of the number of small features. The observed relationship between texture formation and ion flux suggests that the evolution of these features is not adequately described by theories predicting that the mature conical sidewall angle is related to the angle of the maximum sputtering yield. These textured surfaces can be coated with other metals for a variety of possible applications including: (1) pulsed power Li+ beam anodes, (2) cold cathode field emission devices, (3) optical absorbers and (4) catalysis supports. 18 refs., 5 figs

Composition and structure of ion-bombardment-induced growth cones on InP

International Nuclear Information System (INIS)

Malherbe, J.B.; Lakner, H.; Gries, W.H.

1991-01-01

The previously reported effect of low-energy (several keV) ion bombardment on the surface topography of InP was investigated by scanning transmission electron microscopy. Convergent beam electron diffraction patterns of the surface growth 'cones' induced by argon ion bombardment of (100) InP between 7 and 10 keV proved the cones to consist of crystalline InP (and not metallic indium, as has sometimes been claimed). The investigation showed that the irradiated surface region is not rendered completely amorphous but that it recrystallizes from the crystalline/amorphous interface in a columnar growth pattern, often terminating in growth cones protruding above the surface. Weak beam investigations revealed that the overwhelming majority of the cones have the orientation of the substrate. These phenomena were observed at all dose densities from 7 x 10 15 to 2 x 10 17 cm -2 . (author)

Cluster induced chemistry at solid surfaces: Molecular dynamics simulations of keV C60 bombardment of Si

International Nuclear Information System (INIS)

Krantzman, K.D.; Kingsbury, D.B.; Garrison, Barbara J.

2007-01-01

Molecular dynamics simulations of the sputtering of Si by keV C 60 bombardment have been performed as a function of incident kinetic energy at two incident angles, normal incidence and 45 deg. Nearly all of the C atoms remain embedded in the surface after bombardment because the C atoms from the projectile form strong covalent bonds with the Si atoms in the target. At low incident kinetic energies, the sputtering yield of Si atoms is small and there is a net deposition of solid material from the projectile atoms. As the incident kinetic energy is increased, the yield of sputtered Si atoms increases. A transition occurs in which the yield of sputtered Si atoms exceeds the number of C atoms deposited, and there is a net erosion of the solid material. A significantly higher sputter yield is observed at an incident angle of 45 deg. than at normal incidence, and therefore, the energy value is lower for the transition from net deposition to net erosion. This phenomenon is discussed in terms of the depth distribution of deposited energy, which is found to be shallower at an incident angle of 45 deg

High-energy particle emission from galena and pyrite bombarded with Cs and O ions

International Nuclear Information System (INIS)

Karpuzov, D.S.; McIntyre, N.S.

2002-01-01

The ejection of energetic particles during steady-state ion surface bombardment has been investigated by means of a dynamic computer simulation as well as in a secondary ion mass spectrometry (SIMS)/low-energy ion scattering from surfaces (LEIS) experiment. The emphasis of this comparative study is on the mass dependence of high-energy tails in sputtering and backscattering for the bombardment of galena (PbS) and pyrite (FeS 2 ) with keV energy ion beam of cesium and oxygen. In the experiment, kinetic energy distributions of sputtered secondary ions (S + , Fe + , Pb + , S - ), as well as backscattered or re-sputtered primary ions (Cs + , O + , O - ), have been measured on a modified Cameca IMS-3f magnetic sector mass spectrometer for keV cesium (Cs + ) and oxygen (O 2 + , O - ) bombardment of galena and pyrite. Ejection of high-energy particles, with emission energies of up to ∼40% or up to ∼60% of the bombarding energy for sputtering of the lighter component (S ± ) with cesium or oxygen, respectively, and of up to ∼40% (Cs + ) and ∼80% (O ± ) for backscattering, has been observed for PbS. The computer simulations were based on the well-known MARLOWE code. In order to model the change of the stoichiometry of the binary compounds, dynamic modification of the target composition in the near-surface region was introduced. Cs incorporation was included, and a relative enrichment of the metallic component (Pb, Fe) in the top few layers due to preferential sputtering of sulfur was allowed. The computer simulations provide information on the formation of altered layer under sputter equilibrium as well as on the energy and angular emission distributions of sputtered and backscattered particles in steady-state conditions. Multiple scattering of Cs projectiles and dynamic re-sputtering of cesium that was previously incorporated in the altered near-surface region can be distinguished in the simulation, and matched with the experimental observations. In addition

Effects produced in GaAs by MeV ion bombardment

International Nuclear Information System (INIS)

Wie, C.R.

1985-01-01

The first part of this thesis presents work performed on the ionizing energy beam induced adhesion enhancement of thin (approx.500 A) Au films on GaAs substrates. The ionizing beam, employed in the present thesis, is the MeV ions (i.e., 16 O, 19 F, and 35 Cl), with energies between 1 and 20 MeV. Using the Scratch test for adhesion measurement, and ESCA for chemical analysis of the film substrate interface, the native oxide layer at the interface is shown to play an important role in the adhesion enhancement by the ionizing radiation. A model is discussed that explains the experimental data on the dependence of adhesion enhancement on the energy which was deposited into electronic processes at the interface. The second part of the thesis presents research results on the radiation damage in GaAs crystals produced by MeV ions. Lattice parameter dilatation in the surface layers of the GaAs crystals becomes saturated after a high dose bombardment at room temperature. The strain produced by nuclear collisions is shown to relax partially due to electronic excitation (with a functional dependence on the nuclear and electronic stopping power of bombarding ions. Data on the GaAs and GaP crystals suggest that low temperature recovery stage defects produce major crystal distortion

The effect of incidence angle on ion bombardment induced surface topography development on single crystal copper

International Nuclear Information System (INIS)

Carter, G.; Nobes, M.J.; Lewis, G.W.; Whitton, J.L.

1982-01-01

The fluence dependence of development of microscopic surface features, particularly etch pits, during 9 keV Ar + ion bombardment of (11,3,1) oriented Cu single crystals has been studied employing quasi-dynamic irradiation and observation techniques in a scanning electron microscope-accelerator system. 9 keV ions are observed not to produce crystallographic pyramids under all irradiation conditions for this surface, a very different result from our earlier studies with higher energy ions. The bombardment does elaborate etch pits however, the habits and growth kinetics of which depend upon both polar and azimuthal angles of ion incidence to the surface. The results are explained in terms of differential erosion of crystal planes modified by the presence of pre-existing and irradiation induces extended defects. (orig.)

Metallic vapor supplying by the electron bombardment for a metallic ion production with an ECR ion source

Energy Technology Data Exchange (ETDEWEB)

Kitagawa, Atsushi; Sasaki, Makoto; Muramatsu, Masayuki [National Inst. of Radiological Sciences, Chiba (Japan); Jincho, Kaoru; Sasaki, Noriyuki; Sakuma, Tetsuya; Takasugi, Wataru; Yamamoto, Mitsugu [Accelerator Engineering Corporation, Chiba (Japan)

2001-11-19

To produce the metallic ion beam for the injection into the Heavy Ion Medical Accelerator in Chiba (HIMAC) at the National Institute of Radiological Sciences (NIRS), a new gas supply method has been developed for an 18 GHz ECR ion source (NIRS-HEC). A metallic target rod at a high positive potential is melted by the electron bombardment technique. The evaporated gas with a maximum flow rate of 50A/sec is supplied into the ECR plasma in case of Fe metal. (author)

Metallic vapor supplying by the electron bombardment for a metallic ion production with an ECR ion source

International Nuclear Information System (INIS)

Kitagawa, Atsushi; Sasaki, Makoto; Muramatsu, Masayuki; Jincho, Kaoru; Sasaki, Noriyuki; Sakuma, Tetsuya; Takasugi, Wataru; Yamamoto, Mitsugu

2001-01-01

To produce the metallic ion beam for the injection into the Heavy Ion Medical Accelerator in Chiba (HIMAC) at the National Institute of Radiological Sciences (NIRS), a new gas supply method has been developed for an 18 GHz ECR ion source (NIRS-HEC). A metallic target rod at a high positive potential is melted by the electron bombardment technique. The evaporated gas with a maximum flow rate of 50A/sec is supplied into the ECR plasma in case of Fe metal. (author)

Ion-bombardment effects on the fatigue life of stainless steel under simulated fusion first-wall conditions

International Nuclear Information System (INIS)

Kohse, G.E.

1983-02-01

An experiment which uses the MITR-II 5 MW research reactor to simulate several aspects of the anticipated environment of a fusion reactor first wall is described. Pressurized tube specimens are subjected simultaneously to stress and temperature cycling, surface bombardment by energetic helium and lithium ions and bulk irradiation by high-energy neutrons. Analysis of the samples is aimed primarily at determining the behavior of the ion bombarded surface layer, which has a depth of 2.5 μm, with particular reference to possible effects on the fatigue life of the material

Study of ion-bombardment-induced surface topography of silver by stereophotogrammetric method

International Nuclear Information System (INIS)

Fayazov, I.M.; Sokolov, V.N.

1992-01-01

The ion-bombardment-induced surface topography of polycrystalline silver was studied using the stereophotogrammetric method. The samples were irradiated with 30keV argon ions at fairly high fluences (> 10 17 ions/cm 2 ). The influence of the inclination angle of the sample in the SEM on the cone shape of a SEM-picture is discussed. To analyse the irradiated surfaces covered with cones, the SEM-stereotechnique is proposed. The measurements of the sample section perpendicular to the incidence plane are also carried out. (author)

Thermo-mechanical design aspects of mercury bombardment ion thrusters.

Science.gov (United States)

Schnelker, D. E.; Kami, S.

1972-01-01

The mechanical design criteria are presented as background considerations for solving problems associated with the thermomechanical design of mercury ion bombardment thrusters. Various analytical procedures are used to aid in the development of thruster subassemblies and components in the fields of heat transfer, vibration, and stress analysis. Examples of these techniques which provide computer solutions to predict and control stress levels encountered during launch and operation of thruster systems are discussed. Computer models of specific examples are presented.

Ripple structures on surfaces and underlying crystalline layers in ion beam irradiated Si wafers

Energy Technology Data Exchange (ETDEWEB)

Grenzer, J.; Muecklich, A. [Forschungszentrum Rossendorf, Institut fuer Ionenstrahlphysik und Materialforschung, Dresden (Germany); Biermanns, A.; Grigorian, S.A.; Pietsch, U. [Institute of Physics, University of Siegen (Germany)

2009-08-15

We report on the formation of ion beam induced ripples in Si(001) wafers when bombarded with Ar+ ions at an energy of 60 keV. A set of samples varying incidence and azimuthal angles of the ion beam with respect to the crystalline surface orientation was studied by two complementary near surface sensitive techniques, namely atomic force microscopy and depth-resolved X-ray grazing incidence diffraction (GID). Additionally, cross-section TEM investigations were carried out. The ripple-like structures are formed at the sample surface as well as at the buried amorphous-crystalline interface. Best quality of the ripple pattern was found when the irradiating ion beam was aligned parallel to the (111) planes. The quality decreases rapidly if the direction of the ion beam deviates from (111). (Abstract Copyright [2009], Wiley Periodicals, Inc.)

Highly ordered nanopatterns on Ge and Si surfaces by ion beam sputtering

International Nuclear Information System (INIS)

Ziberi, B; Cornejo, M; Frost, F; Rauschenbach, B

2009-01-01

The bombardment of surfaces with low-energy ion beams leads to material erosion and can be accompanied by changes in the topography. Under certain conditions this surface erosion can result in well-ordered nanostructures. Here an overview of the pattern formation on Si and Ge surfaces under low-energy ion beam erosion at room temperature will be given. In particular, the formation of ripple and dot patterns, and the influence of different process parameters on their formation, ordering, shape and type will be discussed. Furthermore, the internal ion beam parameters inherent to broad beam ion sources are considered as an additional degree of freedom for controlling the pattern formation process. In this context: (i) formation of ripples at near-normal ion incidence, (ii) formation of dots at oblique ion incidence without sample rotation, (iii) transition between patterns, (iv) formation of ripples with different orientations and (v) long range ordered dot patterns will be presented and discussed.

Immediate fabrication of flower-like graphene oxide by ion beam bombardment

International Nuclear Information System (INIS)

Cheng, Junjie; Zhang, Yuanyuan; Zhang, Guilong; Xiong, Shiquan; Pei, Renjun; Cai, Dongqing; Wu, Zhengyan

2015-01-01

Graphical abstract: - Highlights: • Ion beam bombardment (IBB) could modify the microstructure of graphene oxide (GO). • IBB could transform a compact multi-layered GO to a few-layered flower-like GO. • IBB could effectively improve the dispersion and the related properties of GO. • The main mechanism was proposed to be the etching and charge effects of IBB. - Abstract: An effective and convenient method using ion beam bombardment (IBB) for separating a multi-layered compact graphene oxide (GO) piece into several small few-layered loose pieces was developed, and it was found that those small GO pieces had formed a flower-like structure. Therein, the main mechanism was proposed to be the etching and charge effects of IBB. This work could provide a facile and promising approach for improving the dispersion and the related properties of GO. Furthermore, X-ray diffraction and Raman spectrum determinations demonstrated that, with the increasing fluence, IBB could effectively decrease the chemical groups in the layers of GO, resulting in the decrease of the layer distance.

Immediate fabrication of flower-like graphene oxide by ion beam bombardment

Energy Technology Data Exchange (ETDEWEB)

Cheng, Junjie [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences and Anhui Province, Hefei, Anhui 230031 (China); Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Zhang, Yuanyuan; Zhang, Guilong [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences and Anhui Province, Hefei, Anhui 230031 (China); University of Science and Technology of China, Hefei 230026 (China); Xiong, Shiquan [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences and Anhui Province, Hefei, Anhui 230031 (China); Pei, Renjun, E-mail: rjpei2011@sinano.ac.cn [Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Cai, Dongqing, E-mail: dqcai@ipp.ac.cn [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences and Anhui Province, Hefei, Anhui 230031 (China); Wu, Zhengyan, E-mail: zywu@ipp.ac.cn [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences and Anhui Province, Hefei, Anhui 230031 (China)

2015-12-01

Graphical abstract: - Highlights: • Ion beam bombardment (IBB) could modify the microstructure of graphene oxide (GO). • IBB could transform a compact multi-layered GO to a few-layered flower-like GO. • IBB could effectively improve the dispersion and the related properties of GO. • The main mechanism was proposed to be the etching and charge effects of IBB. - Abstract: An effective and convenient method using ion beam bombardment (IBB) for separating a multi-layered compact graphene oxide (GO) piece into several small few-layered loose pieces was developed, and it was found that those small GO pieces had formed a flower-like structure. Therein, the main mechanism was proposed to be the etching and charge effects of IBB. This work could provide a facile and promising approach for improving the dispersion and the related properties of GO. Furthermore, X-ray diffraction and Raman spectrum determinations demonstrated that, with the increasing fluence, IBB could effectively decrease the chemical groups in the layers of GO, resulting in the decrease of the layer distance.

Xe{sup +} ion beam induced rippled structures on Si miscut wafers

Energy Technology Data Exchange (ETDEWEB)

Hanisch, Antje; Grenzer, Joerg [Forschungszentrum Dresden-Rossendorf, Dresden (Germany); Biermanns, Andreas; Pietsch, Ullrich [Institute of Physics, University of Siegen (Germany)

2009-07-01

We report on the influence of the initial roughness and crystallography of the substrate on the formation of self-organized ripple structures on semiconductors surfaces by noble gas ion bombardment. The Bradley-Harper theory predicts that an initial roughness is most important for starting the sputtering process which in the ends leads to the evolution of regular patterns. We produced periodic structures with intermediate Xe{sup +} ion energies (5-70 keV) at different incidence and azimuthal angles which lead to the assumption that also crystallography plays a role at the beginning of ripple evolution. Most of the previous investigations started from the original roughness of a polished silicon wafer. We used (001) silicon wafers with a miscut angle of 1 , 5 and 10 towards[110]. We studied the ripple formation keeping the ion beam parallel to the[111],[-1-11] or[-111] direction, i.e. parallel, antiparallel or perpendicular to the miscut direction[110]. The parallel and antiparallel case implies a variation of the incidence angle with increased roughness over the surface step terraces. The perpendicular orientation means almost no roughness. The results were compared to normal Si(001) and Si(111) wafers.

The role of Frenkel defect diffusion in dynamic annealing in ion-irradiated Si

Energy Technology Data Exchange (ETDEWEB)

Wallace, J. B.; Aji, L. B. Bayu; Martin, A. A.; Shin, S. J.; Shao, L.; Kucheyev, S. O.

2017-01-06

The formation of stable radiation damage in crystalline solids often proceeds via complex dynamic annealing processes, involving migration and interaction of ballistically-generated point defects. The dominant dynamic annealing processes, however, remain unknown even for crystalline Si. Here, we use a pulsed ion beam method to study defect dynamics in Si bombarded in the temperature range from -20 to 140 °C with 500 keV Ar ions. Results reveal a defect relaxation time constant of ~10–0.2 ms, which decreases monotonically with increasing temperature. The dynamic annealing rate shows an Arrhenius dependence with two well-defined activation energies of 73 ± 5 meV and 420 ± 10 meV, below and above 60 °C, respectively. Rate theory modeling, bench-marked against this data, suggests a crucial role of both vacancy and interstitial diffusion, with the dynamic annealing rate limited by the migration and interaction of vacancies.

Investigation of the surface morphology of ion-bombarded biocompatible materials with a SEM and profilograph

International Nuclear Information System (INIS)

Kowalski, Z.W.

1984-01-01

The surface morphology (topography and roughness) is a very important factor which affects the response of biological tissue to an implant material. The effect of an incident ion beam on surface morphology of various biocompatible materials was studied. All materials were bombarded by Ar + ions at an applied voltage of 7 kV at various incident angles from 0 to 1.4 rad (0 to 80 deg) and at a beam current up to 0.1 mA. The surface topographies of ion-bombarded samples were examined with a Japan Electron Optics Laboratory, model JSM-35, scanning electron microscope. The roughness of the surface was calculated from the shape of a surface profile, which was recorded by a profilograph, the ME 10 (supplied by VEB Carl Zeiss, Jena). (author)

Phenomenology of the plastic flow of amorphous solids induced by heavy-ion bombardment

International Nuclear Information System (INIS)

Klaumuenzer, S.; Benyagoub, A.

1991-01-01

Amorphous solids exhibit at temperatures far below the glass transition plastic flow when bombarded with fast heavy ions (kinetic energy ∼1 MeV/u). The dimensions perpendicular to the ion beam grow whereas the sample dimension parallel to the ion beam shrinks. The strain tensor describing phenomenologically these dimensional changes is derived from symmetry considerations and compared with experiment. Particular attention is devoted to angular changes, which have not been discussed in this context so far

Effects of uranium bombardment by 20-40 KeV argon ions, Annex 2

International Nuclear Information System (INIS)

Nenadovic, T.; Jurela, Z.

1966-01-01

This paper shows the results of argon ions interaction with the polycrystal natural uranium. Thin foil of uranium about 200 μ was bombarded by 20-40 KeV argon ions. Coefficients of cathode scattering δ and secondary electrons emission γ were measured, during the process A + →U. The foil was then studied by transmission method and method of single step replica using an electron microscope [sr

X-ray diffraction study of stress relaxation in cubic boron nitride films grown with simultaneous medium-energy ion bombardment

International Nuclear Information System (INIS)

Abendroth, B.; Gago, R.; Eichhorn, F.; Moeller, W.

2004-01-01

Relaxation of the intrinsic stress of cubic boron nitride (cBN) thin films has been studied by x-ray diffraction (XRD) using synchrotron light. The stress relaxation has been attained by simultaneous medium-energy ion bombardment (2-10 keV) during magnetron sputter deposition, and was confirmed macroscopically by substrate curvature measurements. In order to investigate the stress-release mechanisms, XRD measurements were performed in in-plane and out-of-plane geometry. The analysis shows a pronounced biaxial state of compressive stress in the cBN films grown without medium-energy ion bombardment. This stress is partially released during the medium-energy ion bombardment. It is suggested that the main path for stress relaxation is the elimination of strain within the cBN grains due to annealing of interstitials

AES, EELS and TRIM simulation method study of InP(100 subjected to Ar+, He+ and H+ ions bombardment.

Directory of Open Access Journals (Sweden)

Abidri B.

2012-06-01

Full Text Available Auger Electron Spectroscopy (AES and Electron Energy Loss Spectroscopy (EELS have been performed in order to investigate the InP(100 surface subjected to ions bombardment. The InP(100 surface is always contaminated by carbon and oxygen revealed by C-KLL and O-KLL AES spectra recorded just after introduction of the sample in the UHV spectrometer chamber. The usually cleaning process of the surface is the bombardment by argon ions. However, even at low energy of ions beam (300 eV indium clusters and phosphorus vacancies are usually formed on the surface. The aim of our study is to compare the behaviour of the surface when submitted to He+ or H+ ions bombardment. The helium ions accelerated at 500V voltage and for 45 mn allow removing contaminants but induces damaged and no stoichiometric surface. The proton ions were accelerated at low energy of 500 eV to bombard the InP surface at room temperature. The proton ions broke the In-P chemical bonds to induce the formation of In metal islands. Such a chemical reactivity between hydrogen and phosphorus led to form chemical species such as PH and PH3, which desorbed from the surface. The chemical susceptibly and the small size of H+ advantaged their diffusion into bulk. Since the experimental methods alone were not able to give us with accuracy the disturbed depth of the target by these ions. We associate to the AES and EELS spectroscopies, the TRIM (Transport and Range of Ions in Matter simulation method in order to show the mechanism of interaction between Ar+, He+ or H+ ions and InP and determine the disturbed depth of the target by argon, helium or proton ions.

Ion induced electron emission statistics under Agm- cluster bombardment of Ag

Science.gov (United States)

Breuers, A.; Penning, R.; Wucher, A.

2018-05-01

The electron emission from a polycrystalline silver surface under bombardment with Agm- cluster ions (m = 1, 2, 3) is investigated in terms of ion induced kinetic excitation. The electron yield γ is determined directly by a current measurement method on the one hand and implicitly by the analysis of the electron emission statistics on the other hand. Successful measurements of the electron emission spectra ensure a deeper understanding of the ion induced kinetic electron emission process, with particular emphasis on the effect of the projectile cluster size to the yield as well as to emission statistics. The results allow a quantitative comparison to computer simulations performed for silver atoms and clusters impinging onto a silver surface.

FTIR and Vis-FUV real time spectroscopic ellipsometry studies of polymer surface modifications during ion beam bombardment

Science.gov (United States)

Laskarakis, A.; Gravalidis, C.; Logothetidis, S.

2004-02-01

The continuously increasing application of polymeric materials in many scientific and technological fields has motivated an extensive use of polymer surface treatments, which modify the physical and chemical properties of polymer surfaces leading to surface activation and promotion of the surface adhesion. Fourier transform IR spectroscopic ellipsometry (FTIRSE) and phase modulated ellipsometry (PME) in the IR and Vis-FUV spectral regions respectively have been employed for in situ and real time monitoring of the structural changes on the polymer surface obtained by Ar + ion bombardment. The polymers were industrially supplied polyethylene terephthalate (PET) and polyethylene naphthalate (PEN) membranes. The Ar + ion bombardment has found to change the chemical bonding of the films and especially the amount of the CO, C-C and CC groups. The detailed study of the FTIRSE spectra reveals important information about the effect of the Ar + ion bombardment on each of the above bonding groups. Also, the modification of the characteristic features, attributed to electronic transitions in specific bonds of PET and PEN macromolecules, has been studied using PME.

FTIR and Vis-FUV real time spectroscopic ellipsometry studies of polymer surface modifications during ion beam bombardment

International Nuclear Information System (INIS)

Laskarakis, A.; Gravalidis, C.; Logothetidis, S.

2004-01-01

The continuously increasing application of polymeric materials in many scientific and technological fields has motivated an extensive use of polymer surface treatments, which modify the physical and chemical properties of polymer surfaces leading to surface activation and promotion of the surface adhesion. Fourier transform IR spectroscopic ellipsometry (FTIRSE) and phase modulated ellipsometry (PME) in the IR and Vis-FUV spectral regions respectively have been employed for in situ and real time monitoring of the structural changes on the polymer surface obtained by Ar + ion bombardment. The polymers were industrially supplied polyethylene terephthalate (PET) and polyethylene naphthalate (PEN) membranes. The Ar + ion bombardment has found to change the chemical bonding of the films and especially the amount of the C-O, C-C and C-C groups. The detailed study of the FTIRSE spectra reveals important information about the effect of the Ar + ion bombardment on each of the above bonding groups. Also, the modification of the characteristic features, attributed to electronic transitions in specific bonds of PET and PEN macromolecules, has been studied using PME

Direct-write three-dimensional nanofabrication of nanopyramids and nanocones on Si by nanotumefaction using a helium ion microscope

Science.gov (United States)

Zhang, L.; Heinig, N. F.; Bazargan, S.; Abd-Ellah, M.; Moghimi, N.; Leung, K. T.

2015-06-01

The recently commercialized helium ion microscope (HIM) has already demonstrated its outstanding imaging capabilities in terms of resolution, surface sensitivity, depth of field and ease of charge compensation. Here, we show its exceptional patterning capabilities by fabricating dense lines and three-dimensional (3D) nanostructures on a Si substrate. Small focusing spot size and confined ion-Si interaction volume of a high-energy helium ion beam account for the high resolution in HIM patterning. We demonstrate that a set of resolvable parallel lines with a half pitch as small as 3.5 nm can be achieved. During helium ion bombardment of the Si surface, implantation outperforms milling due to the small mass of the helium ions, which produces tumefaction instead of depression in the Si surface. The Si surface tumefaction is the result of different kinetic processes including diffusion, coalescence and nanobubble formation of the implanted ions, and is found to be very stable structurally at room temperature. Under appropriate conditions, a linear dependence of the surface swollen height on the ion doses can be observed. This relation has enabled us to fabricate nanopyramids and nanocones, thus demonstrating that HIM patterning provides a new ‘bottom-up’ approach to fabricate 3D nanostructures. This surface tumefaction method is direct, both positioning and height accurate, and free of resist, etch, mode and precursor, and it promises new applications in nanoimprint mold fabrication and photomask clear defect reparation.

Influence of substrate pre-treatments by Xe{sup +} ion bombardment and plasma nitriding on the behavior of TiN coatings deposited by plasma reactive sputtering on 100Cr6 steel

Energy Technology Data Exchange (ETDEWEB)

Vales, S., E-mail: sandra.vales@usp.br [Universidade de São Paulo (USP), Escola de Engenharia de São Carlos, Av. Trabalhador São Carlense 400, São Carlos, SP CEP 13566-590 (Brazil); Brito, P., E-mail: ppbrito@gmail.com [Pontifícia Universidade Católica de Minas Gerais (PUC-MG), Av. Dom José Gaspar 500, 30535-901 Belo Horizonte, MG (Brazil); Pineda, F.A.G., E-mail: pipe8219@gmail.com [Universidade de São Paulo (USP), Escola de Engenharia de São Carlos, Av. Trabalhador São Carlense 400, São Carlos, SP CEP 13566-590 (Brazil); Ochoa, E.A., E-mail: abigail_ochoa@hotmail.com [Universidade Estadual de Campinas (UNICAMP), Campus Universitário Zeferino Vaz, Barão Geraldo, Campinas, SP CEP 13083-970 (Brazil); Droppa, R., E-mail: roosevelt.droppa@ufabc.edu.br [Universidade Federal do ABC (UFABC), Av. dos Estados, 5001, Santo André, SP CEP 09210-580 (Brazil); Garcia, J., E-mail: jose.garcia@sandvik.com [Sandvik Coromant R& D, Lerkrogsvägen 19, SE-12680, Stockholm (Sweden); Morales, M., E-mail: monieriz@gmail.com [Universidade Estadual de Campinas (UNICAMP), Campus Universitário Zeferino Vaz, Barão Geraldo, Campinas, SP CEP 13083-970 (Brazil); Alvarez, F., E-mail: alvarez@ifi.unicamp.br [Universidade Estadual de Campinas (UNICAMP), Campus Universitário Zeferino Vaz, Barão Geraldo, Campinas, SP CEP 13083-970 (Brazil); and others

2016-07-01

In this paper the influence of pre-treating a 100Cr6 steel surface by Xe{sup +} ion bombardment and plasma nitriding at low temperature (380 °C) on the roughness, wear resistance and residual stresses of thin TiN coatings deposited by reactive IBAD was investigated. The Xe{sup +} ion bombardment was carried out using a 1.0 keV kinetic energy by a broad ion beam assistance deposition (IBAD, Kaufman cell). The results showed that in the studied experimental conditions the ion bombardment intensifies nitrogen diffusion by creating lattice imperfections, stress, and increasing roughness. In case of the combined pre-treatment with Xe{sup +} ion bombardment and subsequent plasma nitriding, the samples evolved relatively high average roughness and the wear volume increased in comparison to the substrates exposed to only nitriding or ion bombardment. - Highlights: • Effect of Xe ion bombardment and plasma nitriding on TiN coatings was investigated. • Xe ion bombardment with 1.0 KeV increases nitrogen retention in plasma nitriding. • 1.0 KeV ion impact energy causes sputtering, thus increasing surface roughness. • TiN coating wear is minimum after plasma nitriding due to lowest roughness.

Ion bombardment induced topography evolution on low index crystal surfaces of Cu and Pb

International Nuclear Information System (INIS)

Tanovic, L.; Tanovic, N.; Carter, G.; Nobes, M.J.

1993-01-01

(100), (110) and (111) oriented single crystal surfaces of Cu and Pb have been bombarded with inert gas ions, self ions, ions of the other substrate species and Bi in the energy range 50-150 keV and in the fluence range 10 15 -10 18 ions.cm 2 . The evolving surface topography was observed by scanning electron microscopy. This topography was observed to be strongly influenced by ion species and surface orientation but the habit of the topography was delineated at low fluences and the features increased in size and density with increasing fluence with some mutation to the more stable of the features. As an example Bi and Pb bombardment of (100) Cu leads to little topographic evolution, (110) Cu develops a system of parallel ridges with (100) facets and (111) Cu develops a prismatic surface, each prism possessing (100) facets. These, and the more general, results cannot be explained by surface erosion by sputtering theory alone (this predicts surface stability of the lowest sputtering yield orientation (110), nor by surface free energy density minimisation criteria (this predicts stability of (111) surfaces). It is proposed that the observed topography is most strongly related to the crystallographic form of precipitates of implanted species. (orig.)

Systematic analysis of neutron yields from thick targets bombarded by heavy ions and protons with moving source model

Energy Technology Data Exchange (ETDEWEB)

Kato, Takashi; Kurosawa, Tadahiro; Nakamura, Takashi E-mail: nakamura@cyric.tohoku.ac.jp

2002-03-21

A simple phenomenological analysis using the moving source model has been performed on the neutron energy spectra produced by bombarding thick targets with high energy heavy ions which have been systematically measured at the Heavy-Ion Medical Accelerator (HIMAC) facility (located in Chiba, Japan) of the National Institute of Radiological Sciences (NIRS). For the bombardment of both heavy ions and protons in the energy region of 100-500 MeV per nucleon, the moving source model incorporating the knock-on process could be generally successful in reproducing the measured neutron spectra within a factor of two margin of accuracy. This phenomenological analytical equation is expressed having several parameters as functions of atomic number Z{sub p}, mass number A{sub p}, energy per nucleon E{sub p} for projectile, and atomic number Z{sub T}, mass number A{sub T} for target. By inputting these basic data for projectile and target into this equation we can easily estimate the secondary neutron energy spectra at an emission angle of 0-90 deg. for bombardment with heavy ions and protons in the aforementioned energy region. This method will be quite useful to estimate the neutron source term in the neutron shielding design of high energy proton and heavy ion accelerators.

Mechanism of conductivity type conversion in p-Hg1-xCdxTe crystals under low energy ion bombardment

International Nuclear Information System (INIS)

Bogoboyashchij, V.V.; Izhnin, I.I.

2000-01-01

Conditions giving rise to accelerated diffusion of Hg under bombardment of p-Hg 1-x Cd x Te by low-energy particles are analyzed and probable mechanisms of the phenomenon are suggested, permitting qualitative and quantitative agreement with experimental data. Analysis indicates that basic regularities of p-n-conversion during Hg 0.8 Cd 0.2 Te crystal bombardment by neutralized ions can be easily explained in the framework of traditional notions of mercury chemical diffusion in this material. The regularities stem from specific features of defect formation in Hg 0.8 Cd 0.2 Te, on the one hand, and from a high concentration of intrinsic electrons and holes, screening effectively the defective layer electric field, on the other hand. The high rate of conversion during ion bombardment compared with the rate of conversion during annealing in mercury vapors can be explained by the fact that a great number of nonequilibrium interstitial atoms of mercury, by far exceeding the value during thermal annealing, is crated near the surface of the crystal bombarded [ru

Direct-write three-dimensional nanofabrication of nanopyramids and nanocones on Si by nanotumefaction using a helium ion microscope

International Nuclear Information System (INIS)

Zhang, L; Heinig, N F; Bazargan, S; Abd-Ellah, M; Moghimi, N; Leung, K T

2015-01-01

The recently commercialized helium ion microscope (HIM) has already demonstrated its outstanding imaging capabilities in terms of resolution, surface sensitivity, depth of field and ease of charge compensation. Here, we show its exceptional patterning capabilities by fabricating dense lines and three-dimensional (3D) nanostructures on a Si substrate. Small focusing spot size and confined ion–Si interaction volume of a high-energy helium ion beam account for the high resolution in HIM patterning. We demonstrate that a set of resolvable parallel lines with a half pitch as small as 3.5 nm can be achieved. During helium ion bombardment of the Si surface, implantation outperforms milling due to the small mass of the helium ions, which produces tumefaction instead of depression in the Si surface. The Si surface tumefaction is the result of different kinetic processes including diffusion, coalescence and nanobubble formation of the implanted ions, and is found to be very stable structurally at room temperature. Under appropriate conditions, a linear dependence of the surface swollen height on the ion doses can be observed. This relation has enabled us to fabricate nanopyramids and nanocones, thus demonstrating that HIM patterning provides a new ‘bottom-up’ approach to fabricate 3D nanostructures. This surface tumefaction method is direct, both positioning and height accurate, and free of resist, etch, mode and precursor, and it promises new applications in nanoimprint mold fabrication and photomask clear defect reparation. (paper)

Heavy ion induced disorder introduction in the surface and at shallow depths in Si

International Nuclear Information System (INIS)

Roosendaal, H.E.; Weick, M.; Hubbes, H.H.; Lutz, H.O.

1979-01-01

Disorder in a Si lattice has been produced by bombardment with 220 and 290 keV C + , N + , Ne + and Ar + ions. The production of surface disorder is compared with the disorder production at shallow depths. For random incidence of the damaging projectiles, the surface disorder has been found to scale with the disorder at shallow depths (380 to 800 A). For channeling incidence, a Z 1 dependent reduction of the surface disorder is observed. This reduction is much smaller than that for the disorder in the depth interval 380 to 800 A. (author)

Engineering catalytic activity via ion beam bombardment of catalyst supports for vertically aligned carbon nanotube growth

Science.gov (United States)

Islam, A. E.; Nikolaev, P.; Amama, P. B.; Zakharov, D.; Sargent, G.; Saber, S.; Huffman, D.; Erford, M.; Semiatin, S. L.; Stach, E. A.; Maruyama, B.

2015-09-01

Carbon nanotube growth depends on the catalytic activity of metal nanoparticles on alumina or silica supports. The control on catalytic activity is generally achieved by variations in water concentration, carbon feed, and sample placement on a few types of alumina or silica catalyst supports obtained via thin film deposition. We have recently expanded the choice of catalyst supports by engineering inactive substrates like c-cut sapphire via ion beam bombardment. The deterministic control on the structure and chemistry of catalyst supports obtained by tuning the degree of beam-induced damage have enabled better regulation of the activity of Fe catalysts only in the ion beam bombarded areas and hence enabled controllable super growth of carbon nanotubes. A wide range of surface characterization techniques were used to monitor the catalytically active surface engineered via ion beam bombardment. The proposed method offers a versatile way to control carbon nanotube growth in patterned areas and also enhances the current understanding of the growth process. With the right choice of water concentration, carbon feed and sample placement, engineered catalyst supports may extend the carbon nanotube growth yield to a level that is even higher than the ones reported here, and thus offers promising applications of carbon nanotubes in electronics, heat exchanger, and energy storage.

Influence of keV-He ion bombardment on the magnetic properties of Co/Pd multilayers

Energy Technology Data Exchange (ETDEWEB)

Mueglich, Nicolas; Buhl, Oliver; Weis, Tanja; Engel, Dieter; Ehresmann, Arno [Institute of Physics and Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel (Germany); Hellwig, Olav [San Jose Research Center, HGST, A Western Digital Company, CA (United States)

2013-07-01

Thin films of ferromagnetic Co separated by Pd films with thicknesses in the first ferromagnetic maximum of interlayer exchange coupling are magnetically dominated by perpendicular-to-plane anisotropy and labyrinth stripe domain patterns in remanence. During the magnetization reversal of such a multilayer system domain nucleation and domain wall movement can be observed for different external magnetic fields H. The influence of keV-He ion bombardment on the microstructure of the system and its resultant decrease of magnetic anisotropy has been investigated by vibrating sample magnetometry, polar magneto-optical Kerr effect and magnetic force microscopy. It is shown that areas of ferromagnetic in-plane anisotropy are created due to the ion bombardement and that the system shows an increasing quotient of superparamagnetism in the deeper layers of the multilayersystem.

Influence of ion bombardment on growth and properties of PLD created DLC films

Czech Academy of Sciences Publication Activity Database

Jelínek, Miroslav; Písařík, Petr; Kocourek, Tomáš; Zemek, Josef; Lukeš, J.

2013-01-01

Roč. 110, č. 4 (2013), s. 943-947 ISSN 0947-8396 R&D Projects: GA MŠk LD12069 Institutional research plan: CEZ:AV0Z10100522 Keywords : DLC * ion bombardment * sp3 /sp2 * thin films * PLD Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.694, year: 2013

Investigation of thin oxide layer removal from Si substrates using an SiO2 atomic layer etching approach: the importance of the reactivity of the substrate

International Nuclear Information System (INIS)

Metzler, Dominik; Oehrlein, Gottlieb S; Li, Chen; Lai, C Steven; Hudson, Eric A

2017-01-01

The evaluation of a plasma-based atomic layer etching (ALE) approach for native oxide surface removal from Si substrates is described. Objectives include removal of the native oxide while minimizing substrate damage, surface residues and substrate loss. Oxide thicknesses were measured using in situ ellipsometry and surface chemistry was analyzed by x-ray photoelectron spectroscopy. The cyclic ALE approach when used for removal of native oxide SiO 2 from a Si substrate did not remove native oxide to the extent required. This is due to the high reactivity of the silicon substrate during the low-energy (<40 eV) ion bombardment phase of the cyclic ALE approach which leads to reoxidation of the silicon surface. A modified process, which used continuously biased Ar plasma with periodic CF 4 injection, achieved significant oxygen removal from the Si surface, with some residual carbon and fluorine. A subsequent H 2 /Ar plasma exposure successfully removed residual carbon and fluorine while passivating the silicon surface. The combined treatment reduced oxygen and carbon levels to about half compared to as received silicon surfaces. The downside of this process sequence is a net loss of about 40 Å of Si. A generic insight of this work is the importance of the substrate and final surface chemistry in addition to precise etch control of the target film for ALE processes. By a fluorocarbon-based ALE technique, thin SiO 2 layer removal at the Ångstrom level can be precisely performed from an inert substrate, e.g. a thick SiO 2 layer. However, from a reactive substrate, like Si, complete removal of the thin SiO 2 layer is prevented by the high reactivity of low energy Ar + ion bombarded Si. The Si surfaces are reoxidized during the ALE ion bombardment etch step, even for very clean and ultra-low O 2 process conditions. (paper)

Annealing of defects in indium antimonide after ion bombardment

International Nuclear Information System (INIS)

Bogatyrev, V.A.; Kachurin, G.A.

1977-01-01

Indium antimonide electric properties are investigated after ion bombardment of different mass (with energy of 60 and 300 keV) and isochrone annealing in the 20-450 deg C temperature range. It is shown that 100-150 deg C n- type stable layers are formed after proton irradiation at room temperature only. Indium antimonide exposure by average mass ions under the same conditions and also by helium ions of 300 keV energy brings to p-type layer formation with high hole concentration. Subsequent heating at the temperature over 150 deg C results in electron conductivity of irradiated layers. Electron volume density and mobility efficiency reaches 10 18 cm -3 and 10 4 cm 2 /Vs respectively. N-type formed layers are stable up to 350 deg C allowing its usage for n-p transition formation admitting thermal treatment. Analysis is given of defect behaviour peculiarities depending upon the irradiation and annealing conditions. Hole conductivity in irradiated indium antimonide is supposed to be stipulated by regions of disorder, while electron conductivity - by relatively simpler disorders

Effect of N4+ and C4+ ion beam bombardment on the optical and structural characteristics of ethylene-norbornene copolymer (TOPAS)

International Nuclear Information System (INIS)

Siljegovic, M.; Kacarevic-Popovic, Z.M.; Krkljes, A.N.; Stojanovic, Z.; Jovanovic, Z.M.

2011-01-01

Ion bombardment is a suitable tool to modify the optical properties of polymers. In the present study the effect of ion bombardment on the optical absorption of ethylene-norbornene copolymer (TOPAS) was studied using ultraviolet-visible (UV-Vis) and Raman spectroscopy. Polymer samples were bombarded with 60 keV C 4+ and N 4+ ion beams to various fluences ranging from 1.0 x 10 13 to 1.0 x 10 16 cm -2 . The indirect and direct band gaps have been determined. The values of direct band gaps have been found to be greater than the corresponding values of the indirect band gaps. Activation energy has been investigated as the function of ion fluences. The number of carbon atoms per conjugated length is determined according to modified Tauc's equation. The correlation between the optical band gap, activation energy for optical transition and the number of carbon atoms per conjugated length as well as chemical structure changes induced by ion beams irradiation have been discussed in the case of ethylene-norbornene copolymer.

A liquid-like model for the morphology evolution of ion bombarded thin films

Energy Technology Data Exchange (ETDEWEB)

Repetto, L., E-mail: luca.repetto@unige.it [Department of Physics and Nanomed Labs, Università di Genova, Via Dodecaneso 33, 16146 Genova (Italy); Lo Savio, R. [Department of Physics and Nanomed Labs, Università di Genova, Via Dodecaneso 33, 16146 Genova (Italy); Šetina Batič, B. [Inštitut Za Kovinske Materiale in Tehnologije, Lepi pot 11, 1000 Ljubljana (Slovenia); Firpo, G.; Angeli, E.; Valbusa, U. [Department of Physics and Nanomed Labs, Università di Genova, Via Dodecaneso 33, 16146 Genova (Italy)

2015-07-01

Thin solid films exposed to ion irradiation exhibit a peculiar evolution that can differ substantially from what is observed for bulk samples. The phenomenology of the patterns that self-organize on the substrate is very rich, with morphologies that display several degrees of order upon the modification of initial film characteristics and irradiation parameters. This richness paves the way for the fabrication of novel functional surfaces, but it is also an indication of the complexity of the underlying driving mechanisms. A remarkable simplification for the comprehension of these phenomena can come from the noteworthy similarity of the obtained patterns with those showing up when liquids dewet from their substrates. Here, we analyze the possibility to apply a liquid-like model to explain the morphology evolution of ion bombarded thin films for the whole phenomenology showing up in experiments. In establishing this connection between liquids and ion bombarded thin films, we propose to use also for liquids the insight gained for our system with recent experiments that stress the importance of the substrate topography for the selection of the dewetting mechanism. If confirmed, this result would lead to a reconsideration of the importance of capillary waves in spinodal dewetting, and will help to understand the low reproducibility of the related experimental results.

Energy and dose characteristics of ion bombardment during pulsed laser deposition of thin films under pulsed electric field

International Nuclear Information System (INIS)

Fominski, V.Yu.; Nevolin, V.N.; Smurov, I.

2004-01-01

Experiments on pulsed laser deposition of Fe films on Si substrates were performed with the aim to analyze the role of factors determining the formation of an energy spectrum and a dose of ions bombarding the film in strong pulsed electric fields. The amplitude of the high-voltage pulse (-40 kV) applied to the substrate and the laser fluence at the Fe target were fixed during the deposition. Owing to the high laser fluence (8 J/cm 2 ) at a relatively low power (20 mJ), the ionization of the laser plume was high, but the Fe vapor pressure near the substrate was low enough to avoid arcing. Electric signals from a target exposed to laser radiation were measured under different conditions (at different delay times) of application of electric pulses. The Si(100) substrates were analyzed using Rutherford ion backscattering/channeling spectrometry. The ion implantation dose occurred to be the highest if the high-voltage pulse was applied at a moment of time when the ion component of the plume approached the substrate. In this case, the implanted ions had the highest energy determined by the amplitude of the electric pulse. An advance or delay in applying a high-voltage pulse caused the ion dose and energy to decrease. A physical model incorporating three possible modes of ion implantation was proposed for the interpretation of the experimental results. If a laser plume was formed in the external field, ions were accelerated from the front of the dense plasma, and the ion current depended on the gas-dynamic expansion of the plume. The application of a high-voltage pulse, at the instant when the front approached the substrate, maintained the mode that was characteristic of the traditional plasma immersion ion implantation, and the ion current was governed by the dynamics of the plasma sheath in the substrate-to-target gap. In the case of an extremely late application of a high-voltage pulse, ions retained in the entire volume of the experimental chamber (as a result of the

The development of cones and associated features on ion bombarded copper

International Nuclear Information System (INIS)

Whitton, J.L.; Carter, G.; Nobes, M.J.; Williams, J.S.

1977-01-01

Observations of ion-bombardment-induced surface modifications on crystalline copper substrates have been made using scanning electron microscopy. The delineation and development of grain boundary edges, faceted and terraced etch pits and small-scale ripple structure, together with the formation of faceted conical features, have all been observed on low and high purity polycrystalline substrates. In general, the density of such surface morphological features, although variable from grain to grain, is higher in the proximity of grain boundaries. In particular, cones are only found within regions where other surface erosional features are present and it would appear that the development of these other features is a pre-requisite to cone generation in high-purity crystalline substrates. We suggest the operation of a defect-induced mechanism of cone formation whereby sputter elaboration of bulk defects (either pre-existing or bombardment-induced) leads to the formation and development of surface features which, in turn, may intersect and result in the generation of cones. (author)

The development of cones and associated features on ion bombarded copper

International Nuclear Information System (INIS)

Whitton, J.L.; Williams, J.S.

1977-01-01

Observations of ion-bombardment-induced surface modifications on crystalline copper substrates have been made using scanning electron microscopy. The delineation and development of grain boundary edges, faceted and terraced etch pits and small-scale ripple structure, together with the formation of faceted conical features have all been observed on low and high purity polycrystalline substrates. In general, the density of such surface morphological features, although variable from grain to grain, is higher in the proximity of grain boundaries. In particular, cones are only found within regions where other surface erosional features are present and it would appear that the development of these other surface features is a pre-requisite to cone generation in high-purity crystalline substrates. The authors suggest the operation of a defect-induced mechanism of cone formation whereby sputter elaboration of bulk defects (either preexisting or bombardment-induced) leads to the formation and development of surface features which, in turn, may intersect and result in the generation of cones. (Auth.)

A note on the random walk theory of recoil movement in prolonged ion bombardment

International Nuclear Information System (INIS)

Koponen, Ismo

1994-01-01

A characteristic function is derived for the probability distribution of final positions of recoil atoms in prolonged ion bombardment of dense matter. The derivation is done within the framework of Poissonian random walk theory using a jump distribution, which is somewhat more general than those studied previously. ((orig.))

Fusion evaporation residues and the distribution of reaction strength in 16O + 40Ca and 28Si + 28Si reactions

International Nuclear Information System (INIS)

Kolata, J.J.; Hinnefeld, J.; Kovar, D.G.

1985-01-01

In measurements performed previously at ANL, studying the two entrance channels 16 O + 40 Ca and 28 Si + 28 Si which form the same compound nucleus 56 Ni, it was found that at higher bombarding energies (E/sub Lab/ > 5-7 MeV/nucleon) the distributions of reaction strength was dramatically different. Although the total reaction cross section behaviors for the two entrance channels are similar, the total evaporation residue (ER) cross sections for 28 Si + 28 Si decrease rapidly with increasing bombarding energies and up to the highest energy studied show no evidence for incomplete fusion processes. For 16 O + 40 Ca the ER cross section remains constant at approximately 1 barn with increasing bombarding energy and shows evidence of increasing contributions from incomplete fusion. To better understand this apparent dependence on the mass asymmetry in the entrance channel, coincidence measurements between evaporation residue-like products and heavy ions on the opposite side of the beam were performed for the two systems at E/sub Lab/ = 8 MeV/nucleon

3 to 15 keV Ar+ induced Auger electron emission from Si and Ar

International Nuclear Information System (INIS)

Kempf, J.; Kaus, G.

1977-01-01

Ar + induced Auger electrons from Si and Ar were investigated at bombardment energies between 3-15 keV and target currents of a few μA. The Auger electron yields were compared with secondary ion yields of Si and Ar by simultaneous SIMS-AES measurements. In the ion induced Auger spectra of Si five Auger peaks and in the Ar spectra three Auger peaks were observed. The ion induced Auger electron yield of Si and Ar were found to be strongly dependent upon the primary ion energy. 'Bulk like' and 'atomic like' Auger transitions of ion induced Auger electrons of Si were observed. (orig.) [de

Absorption of hydrogen in vanadium, enhanced by ion bombardment; Ionenbeschussunterstuetzte Absorption des Wasserstoffs in Vanadium

Energy Technology Data Exchange (ETDEWEB)

Paulus, H.; Lammers, M. [Inst. fuer Technologie- und Wissenstransfer, Soest (Germany); Mueller, K.H. [Inst. fuer Technologie- und Wissenstransfer, Soest (Germany)]|[Paderborn Univ. (Gesamthochschule), Soest (Germany). Fachbereich 16 - Elektrische Energietechnik; Kiss, G.; Kemeny, Z. [Technical Univ. Budapest (Hungary)

1998-12-31

Prior to hydrogen implantation into vanadium, the vanadium specimen usually is exposed to an activation process and is then heated at 1 atm hydrogen to temperatures between 500 and 600 C, subsequently cooled down in several steps. Within this temperature range, hydrogen solubility increases with declining temperature. A decisive factor determining hydrogen absorption is the fact that at temperatures above 250 C, oxygen desorbs from the material surface and thus no longer inhibits hydrogen absorption. Therefore a different approach was chosen for the experiments reported: Hydrogen absorption under UHV conditions at room temperature. After the usual activation process, the vanadium surface was cleaned by 5 keV Ar{sup +} ion bombardment. Thus oxygen absorption at the specimen surface (and new reactions with oxygen from the remaining gas) could be avoided, or removed. By means of thermal desorption mass spectrometry (TDMS), hydrogen absorption as a function of argon ion dose was analysed. TDMS measurements performed for specimens treated by ion bombardment prior to H{sup 2} exposure showed two H{sup 2} desorption peaks, in contrast to the profiles measured with specimens not exposed to ion bombardment. It is assumed that the ion bombardment disturbs the crystal structure so that further sites for hydrogen absorption are produced. (orig./CB) [Deutsch] Bei der Beladung von Vandium mit Wasserstoff wird ueblicherweise die Probe nach einer Aktivierungsprozedur bei 1 atm Wasserstoff auf Temperaturen im Bereich von 500 bis 600 C hochgeheizt und danach schrittweise abgekuehlt. In diesem Temperaturbereich nimmt die Wasserstoffloeslichkeit mit abnehmender Temperatur zu. Entscheidend fuer die Beladung ist aber auch die Tatsache, dass bei Temperaturen groesser 250 C Sauerstoff von der Oberflaeche desorbiert und dadurch die Absorption von Wasserstoff nicht mehr blockieren kann. Im Rahmen der hier beschriebenen Untersuchungen sollte die Wasserstoffbeladung unter UHV-Bedingungen bei

Changes in phase composition and stress state of surface layers of VK20 hard alloy after ion bombardment

International Nuclear Information System (INIS)

Platonov, G.L.; Leonov, E.Yu.; Anikin, V.N.; Anikeev, A.I.

1988-01-01

Titanium ion bombardment of the surface of the hard VK20 alloy is studied for its effect on variations in the phase and chemical composition of its surface layers. It is stated that ion treatment results in the appearance of the η-phase of Co 6 W 6 C composition in the surface layer of the VK20 alloy, in the increase of distortions and decrease of coherent scattering blocks of the hard alloy carbide phase. Such a bombardment is found to provoke a transition of the plane-stressed state of the hard alloy surface into the volume-stressed state. It is established that ion treatment does not cause an allotropic transition of the cobalt phase α-modification, formed during grinding of the hard alloy, into the β-modification

The influence of noble-gas ion bombardment on the electrical and optical properties of clean silicon surfaces

International Nuclear Information System (INIS)

Martens, J.W.D.

1980-01-01

A study of the effect of argon and helium ion bombardment on the electrical and optical properties of the clean silicon (211) surface is described. The objective of the study was to determine the effect of noble gas ions on the density of surface states at the clean silicon surface. (Auth.)

The effect of oxygen ion beam bombardment on the properties of tin indium oxide/polyethylene terephthalate complex

International Nuclear Information System (INIS)

Li, Li; Liu, Honglin; Zou, Lin; Ding, Wanyu; Ju, Dongying; Chai, Weiping

2013-01-01

The tin indium oxide (ITO) films were deposited onto the polyethylene terephthalate (PET) surface that has been bombarded by an O ion beam. The variation of the O bombardment time resulted in the production of ITO/PET complex with different properties. Characterization by four-point probe measurement after the bending fatigue test showed that the adhesion property of the ITO/PET complex could be improved by the increase of O bombardment time while little change of electrical resistivity was observed. Scanning electron microscopy results showed that after the bending fatigue test, the nano scale seams and micro scale trenches appeared at the surface of the ITO/PET complex. The former was only the cracks of ITO film, which has little influence on the continuity and electrical resistivity of ITO film. On the contrary, the micro scale trenches were caused by the peeling off of ITO chips at the cracks, which mainly influenced the continuity and electrical resistivity of ITO film. With the increase of O bombardment time, the number and length of the micro scale trenches decreased. X-ray photoelectron spectrometry characterization showed that with the increase of O bombardment time, parts of the methylene C bonds were transformed into C=O bonds, which could be broken to form C-O-In(Sn) bonds at the initial stage of ITO film growth. By these C-O-In(Sn) crosslink bonds, the ITO film could adhere well onto the PET and the ITO/PET complex display better anti-bending fatigue property. Finally, in the context of the application of the ITO/PET complex as a flexible electrode substrate, the present work reveals a simple way to crosslink them, as well as the physicochemical mechanism happening at the interface of complex. - Highlights: • Polyethylene terephthalate (PET) surface was bombarded by N ions. • Tin indium oxide (ITO) film was deposited on bombarded PET surface. • By bombardment, methylene C bond on PET surface was broken and replaced by C=O bond. • C=O bond was

The effect of oxygen ion beam bombardment on the properties of tin indium oxide/polyethylene terephthalate complex

Energy Technology Data Exchange (ETDEWEB)

Li, Li; Liu, Honglin; Zou, Lin [School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028 (China); Ding, Wanyu, E-mail: dwysd_2000@163.com [School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028 (China); Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116028 (China); Ju, Dongying [Department of Material Science and Engineering, Saitama Institute of Technology, Fukaya 369-0293 (Japan); Chai, Weiping [School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028 (China)

2013-10-31

The tin indium oxide (ITO) films were deposited onto the polyethylene terephthalate (PET) surface that has been bombarded by an O ion beam. The variation of the O bombardment time resulted in the production of ITO/PET complex with different properties. Characterization by four-point probe measurement after the bending fatigue test showed that the adhesion property of the ITO/PET complex could be improved by the increase of O bombardment time while little change of electrical resistivity was observed. Scanning electron microscopy results showed that after the bending fatigue test, the nano scale seams and micro scale trenches appeared at the surface of the ITO/PET complex. The former was only the cracks of ITO film, which has little influence on the continuity and electrical resistivity of ITO film. On the contrary, the micro scale trenches were caused by the peeling off of ITO chips at the cracks, which mainly influenced the continuity and electrical resistivity of ITO film. With the increase of O bombardment time, the number and length of the micro scale trenches decreased. X-ray photoelectron spectrometry characterization showed that with the increase of O bombardment time, parts of the methylene C bonds were transformed into C=O bonds, which could be broken to form C-O-In(Sn) bonds at the initial stage of ITO film growth. By these C-O-In(Sn) crosslink bonds, the ITO film could adhere well onto the PET and the ITO/PET complex display better anti-bending fatigue property. Finally, in the context of the application of the ITO/PET complex as a flexible electrode substrate, the present work reveals a simple way to crosslink them, as well as the physicochemical mechanism happening at the interface of complex. - Highlights: • Polyethylene terephthalate (PET) surface was bombarded by N ions. • Tin indium oxide (ITO) film was deposited on bombarded PET surface. • By bombardment, methylene C bond on PET surface was broken and replaced by C=O bond. • C=O bond was

Ion bombardment induced damage in silicon carbide studied by ion beam analytical methods

Energy Technology Data Exchange (ETDEWEB)

Szilagyi, E.; Kotai, E. [Magyar Tudomanyos Akademia, Budapest (HU). Research Inst. for Particle and Nuclear Physics (RIPNP); Khanh, N.Q.; Horvath, Z.E.; Lohner, T.; Battistig, G.; Zolnai, Z.; Gyulai, J. [Research Inst. for Technical Physics and Materials Science, Budapest (Hungary)

2001-07-01

Damage created by implantation of Al{sup +} ions into 4H-SiC is characterized using backscattering spectrometry in combination with channeling. The measurability of the damage profile in the carbon sublattice was demonstrated using the 4260 keV {sup 12}C({alpha},{alpha}){sup 12}C resonance. To create disorder, Al{sup +} ions with energy of 200 keV and 350 keV were implanted at room temperature. As an independent method, cross-sectional transmission electron microscopy was used to study the damage structure in irradiated 4H-SiC. (orig.)

Experimental and theoretical studies of bombardment induced surface morphology changes

International Nuclear Information System (INIS)

Carter, G.; Nobes, M.J.; Williams, J.S.

1980-01-01

In this review results of experimental and theoretical studies of solid surface morphology changes due to ion bombardment are discussed. An attempt is undertaken to classify the observed specific features of a structure, generated by ion bombardment [ru

Chemical changes in titanate surfaces induced by Ar+ ion bombardment

International Nuclear Information System (INIS)

Gonzalez-Elipe, A.R.; Fernandez, A.; Espinos, J.P.; Munuera, G.; Sanz, J.M.

1992-01-01

The reduction effects and compositional changes induced by 3.5 keV Ar + bombardment of several titanates (i.e. SrTiO 3 , Al 2 TiO 5 and NiTiO 3 ) have been quantitatively investigated by XPS. In all the samples studied here the original Ti 4+ species were reduced to lower oxidation states (i.e. Ti 3+ and Ti 2+ ), although to a lesser extent than in pure TiO 2 . On the contrary, whereas Sr 2+ and Al 3+ seem to remain unaffected by Ar + bombardment, in agreement with the behaviour of the respective oxides (i.e. SrO and Al 2 O 3 ), Ni 2+ appears more easily reducible to Ni o in NiTiO 3 than in NiO. In addition, other specific differences were observed between the titanates, which reveal the existence of interesting chemical effects related to the presence of the different counter-ions in the titanates. In the case of Al 2 TiO 5 , its Ar + -induced decomposition to form TiO 2 + Al 2 O 3 could be followed by XPS. (Author)

Fluorocarbon based atomic layer etching of Si_3N_4 and etching selectivity of SiO_2 over Si_3N_4

International Nuclear Information System (INIS)

Li, Chen; Metzler, Dominik; Oehrlein, Gottlieb S.; Lai, Chiukin Steven; Hudson, Eric A.

2016-01-01

Angstrom-level plasma etching precision is required for semiconductor manufacturing of sub-10 nm critical dimension features. Atomic layer etching (ALE), achieved by a series of self-limited cycles, can precisely control etching depths by limiting the amount of chemical reactant available at the surface. Recently, SiO_2 ALE has been achieved by deposition of a thin (several Angstroms) reactive fluorocarbon (FC) layer on the material surface using controlled FC precursor flow and subsequent low energy Ar"+ ion bombardment in a cyclic fashion. Low energy ion bombardment is used to remove the FC layer along with a limited amount of SiO_2 from the surface. In the present article, the authors describe controlled etching of Si_3N_4 and SiO_2 layers of one to several Angstroms using this cyclic ALE approach. Si_3N_4 etching and etching selectivity of SiO_2 over Si_3N_4 were studied and evaluated with regard to the dependence on maximum ion energy, etching step length (ESL), FC surface coverage, and precursor selection. Surface chemistries of Si_3N_4 were investigated by x-ray photoelectron spectroscopy (XPS) after vacuum transfer at each stage of the ALE process. Since Si_3N_4 has a lower physical sputtering energy threshold than SiO_2, Si_3N_4 physical sputtering can take place after removal of chemical etchant at the end of each cycle for relatively high ion energies. Si_3N_4 to SiO_2 ALE etching selectivity was observed for these FC depleted conditions. By optimization of the ALE process parameters, e.g., low ion energies, short ESLs, and/or high FC film deposition per cycle, highly selective SiO_2 to Si_3N_4 etching can be achieved for FC accumulation conditions, where FC can be selectively accumulated on Si_3N_4 surfaces. This highly selective etching is explained by a lower carbon consumption of Si_3N_4 as compared to SiO_2. The comparison of C_4F_8 and CHF_3 only showed a difference in etching selectivity for FC depleted conditions. For FC accumulation conditions

Compositional disordering of GaAs/AlGaAs multiple quantum wells using ion bombardment at elevated temperatures

International Nuclear Information System (INIS)

Anderson, K.K.; Donnelly, J.P.; Wang, C.A.; Woodhouse, J.D.; Haus, H.A.

1988-01-01

A new method has been developed for compositional mixing of heterostructures by ion bombardment at elevated temperatures. Complete mixing of a 1-μm-thick GaAs/AlGaAs 40-period multiple quantum well layer has been achieved by bombardment with 380 keV Ne + ions for 1 h with the sample at 700 0 C. This temperature is much lower than the annealing temperatures used in other vacancy-enhanced disordering techniques, and even lower temperatures and shorter durations should be possible. Compositional disordering is verified by sputter-profile Auger electron spectroscopy and transmission electron microscopy. Complete mixing is also demonstrated by optical transmission spectra of the disordered material, which exhibit the same band edge as a uniform alloy with the average aluminum mole fraction of the multiple quantum well layer

Exfoliation on stainless steel and inconel produced by 0.8-4 MeV helium ion bombardment

International Nuclear Information System (INIS)

Paszti, F.; Mezey, G.; Pogany, L.; Fried, M.; Manuaba, A.; Kotai, E.; Lohner, T.; Pocs, L.

1982-11-01

Trying to outline the energy dependence of surface deformations such as exfoliation and flaking on candidate CTR first-wall materials, stainless steel and two types of inconels were bombarded by 0.8, 1 and 4 MeV helium ions. All the bombarded spots could be characterized by by large exfoliations covering almost the total implanted area. No spontaneous rupture was observed except on one type of inconel where flaking took place right after reaching the critical dose. After mechanical opening of the formations, similar inner morphology was found as in our previous studies on gold. (author)

Electronic excitation effects on secondary ion emission in highly charged ion-solid interaction

International Nuclear Information System (INIS)

Sekioka, T.; Terasawa, M.; Mitamura, T.; Stoeckli, M.P.; Lehnert, U.; Fehrenbach, C.

2001-01-01

In order to investigate the secondary ion emission from the surface of conductive materials bombarded by highly charged heavy ions, we have done two types of experiments. First, we have measured the yield of the sputtered ions from the surface of solid targets of conductive materials (Al, Si, Ni, Cu) bombarded by Xe q+ (q=15-44) at 300 keV (v p =0.30 a.u) and at 1.0 MeV (v p =0.54 a.u). In view of the secondary ion yields as a function of the potential energy of the projectile, the increase rates below q=35, where the potential energy amounts to 25.5 keV, were rather moderate and showed a prominent increase above q=35. These phenomena were rather strong in the case of the metal targets. Second, we have measured the energy dependence of the yield of the sputtered ions from the surface of solid targets of conductive materials (C, Al) bombarded by Xe q+ (q=30,36,44) between 76 keV (v p =0.15 a.u) and 6.0 MeV (v p =1.3 a.u). A broad enhancement of the secondary ion yield has been found for Al target bombarded by Xe 44+ . From these experimental results, the electronic excitation effects in conductive materials for impact of slow highly charged heavy ions bearing high potential energy is discussed

Stress in ion-beam assisted silicon dioxide and tantalum pentoxide thin films

International Nuclear Information System (INIS)

Sirotkina, Natalia

2003-01-01

Ta 2 O 5 and SiO 2 thin films, deposited at room temperature by ion-beam sputtering (IBS) and dual ion-beam sputtering (DIBS), and SiO 2 films, deposited by reactive e-beam evaporation and ion-assisted deposition, were studied. The energy (150-600 eV) and ion-to-atom arrival ratio (0.27-2.0) of assisting argon and oxygen ions were varied. Influence of deposition conditions (deposition system geometry, nature and amount of gas in the chamber, substrate cleaning and ion-assistance parameters) on films properties (stress, composition, refractive index n 500nm and extinction coefficient k 500nm ) was investigated. A scanning method, based on substrate curvature measurements by laser reflection and stress calculation using the Stoney equation, was employed. RBS showed that stoichiometric Ta 2 O 5 films contain impurities of Ar, Fe and Mo. Stoichiometric SiO 2 films also contain Ta impurity. Argon content increases with ion bombardment and, at maximum incorporation, argon bubbles are registered by TEM. XPS studies are complicated by surface contaminations and preferential sputtering. Evaporated SiO 2 films show +100 MPa stress (+ is tensile, - compressive). With 300 eV Ar + bombardment, stress changes to -200 MPa, n 500nm decreases (1.56-1.49) and k 500nm increases (1.4x10 -4 - 1.8x10 -3 ). Of all studied IBS conditions, stress in SiO 2 (-560 MPa) and Ta 2 O 5 (-350 MPa) films depends only on sputtering gas species and oxygen entry point into the chamber. With argon and oxygen bombardment stress in IBS SiO 2 films decreases to -380 MPa and below the stress measurement system resolution, respectively. While Ar + bombardment of Ta 2 O 5 films leads to increase in stress to -490 MPa, the effect of oxygen assistance depends on ion energy. The observed behaviour was related to the total recoil density. In DIBS SiO 2 and Ta 2 O 5 films n 500nm varies in the region of 1.5-1.59 and 2.13-2.20 and k 500nm is below 5.5x10 -3 and 8.5x10 -3 , respectively. The refractive index

Analyzing heavy-ion-induced charge collection in Si devices by three-dimensional simulation

International Nuclear Information System (INIS)

Dodd, P.E.

1994-01-01

Properties of charge collection in Si devices in response to single-ion bombardment have been studied using transient three-dimensional drift-diffusion simulation. In unloaded Si diodes, the funnel effect is particularly strong in lightly-doped materials for high-density strikes such as 100 MeV Fe, and essentially all charge collection is by funnel-assisted drift. This drift collection may occur at time scales as late as several nanoseconds, much later than is traditionally associated with drift. For more heavily-doped materials or lower-density strikes, such as 5-MeV α-particles, drift and diffusion play more equal roles. In epitaxial structures the funnel is truncated by the heavily-doped substrate, collapses quickly, and a great deal of charge is collected at late times by diffusion. Charge collection in Si circuitry is influenced by the circuit external to the struck device. Loading effects on charge collection were studied using passive external circuit elements as well as by mixed-mode simulation, which allows modeling of active external circuitry. Simulations indicate that the funnel can be significantly affected by the inclusion of passive loads, while active loads may prevent any direct charge collection by funneling. Finally, the use of three-dimensional device simulators is presented as a method of analyzing results obtained from focused ion microbeam experiments

CO dissociation and CO hydrogenation on smooth and ion-bombarded Pd(1 1 1): SFG and XPS spectroscopy at mbar pressures

Science.gov (United States)

Rupprechter, G.; Kaichev, V. V.; Unterhalt, H.; Morkel, M.; Bukhtiyarov, V. I.

2004-07-01

The CO dissociation probability on transition metals is often invoked to explain the product distribution (selectivity) of catalytic CO hydrogenation. Along these lines, we have investigated CO adsorption and dissociation on smooth and ion-bombarded Pd(1 1 1) at pressures up to 1 mbar using vibrational sum frequency generation (SFG) and X-ray photoelectron spectroscopy (XPS). Under high pressure, CO adsorbate structures were observed that were identical to high-coverage structures in UHV. On ion-bombarded surfaces an additional species was detected which was attributed to CO bridge bonded to defect (low-coordinated) sites. On both surfaces, no indications of CO dissociation were found even after hours of 0.1 mbar CO exposure. However, exposing CO/H 2 mixtures to ion-bombarded Pd(1 1 1) produced carbonaceous deposits suggesting CH xO species as precursors for CO bond cleavage and that the formation of CH xO is facilitated by surface defects. The relevance of the observations for CO hydrogenation on Pd catalysts is discussed.

CO dissociation and CO hydrogenation on smooth and ion-bombarded Pd(1 1 1): SFG and XPS spectroscopy at mbar pressures

Energy Technology Data Exchange (ETDEWEB)

Rupprechter, G.; Kaichev, V.V.; Unterhalt, H.; Morkel, M.; Bukhtiyarov, V.I

2004-07-31

The CO dissociation probability on transition metals is often invoked to explain the product distribution (selectivity) of catalytic CO hydrogenation. Along these lines, we have investigated CO adsorption and dissociation on smooth and ion-bombarded Pd(1 1 1) at pressures up to 1 mbar using vibrational sum frequency generation (SFG) and X-ray photoelectron spectroscopy (XPS). Under high pressure, CO adsorbate structures were observed that were identical to high-coverage structures in UHV. On ion-bombarded surfaces an additional species was detected which was attributed to CO bridge bonded to defect (low-coordinated) sites. On both surfaces, no indications of CO dissociation were found even after hours of 0.1 mbar CO exposure. However, exposing CO/H{sub 2} mixtures to ion-bombarded Pd(1 1 1) produced carbonaceous deposits suggesting CH{sub x}O species as precursors for C---O bond cleavage and that the formation of CH{sub x}O is facilitated by surface defects. The relevance of the observations for CO hydrogenation on Pd catalysts is discussed.

On the modeling of irradiation-induced homogeneous precipitation in proton-bombarded Ni-Si solid solutions

Science.gov (United States)

Lam, Nghi Q.; Janghorban, K.; Ardell, A. J.

1981-10-01

Irradiation-induced solute redistribution leading to precipitation of coherent γ' particles in undersaturated Ni-based solid solutions containing 6 and 8 at.% Si during 400-keV proton bombardment was modeled, based on the concept of solute segregation in concentrated alloys under spatially-dependent defect production conditions. The combined effects of (i) an extremely large difference between the defect production rates in the peak-damage and mid-range regions during irradiation and (ii) a preferential coupling between the interstitial and solute fluxes generate a net transient flux of Si atoms into the mid-range region, which is much larger than the solute flux out of this location. As a result, the Si concentration exceeds the solubility limit and homogeneous precipitation of the γ' phase occurs in this particular region of the irradiated samples. The spatial, compositional and temperature dependences of irradiation-induced homogeneous precipitation derived from the present theoretical calculations are in good qualitative agreement with experimental observations

Temperature effect on the formation of a relief of diamond-like carbon coatings and its modification by ion bombardment

International Nuclear Information System (INIS)

Rubshtein, A.P.; Trakhtenberg, I.Sh.; Yugov, V.A.; Vladimirov, A.B.; Plotnikov, S.A.; Ponosov, Yu.S

2006-01-01

Using the method of pulsed arc sputtering of a graphite target the diamond-like coatings (DLC) ∼1.5 μm thick are deposited on a steel R6M5 substrate. The relief of the coatings obtained under various temperature conditions is investigated. Variations of carbon DLC surfaces are followed after their bombardment with accelerated argon or chemically active oxygen ions. Argon ion bombardment is established to be preferred for producing a smoothed-out DLC relief. It is shown that a DLC relief should be taken into account when measuring microhardness. It is recommended that transformation of interatomic bonds in irradiated subsurface layers be taken into consideration if information index of methods applied constitutes several monolayers [ru

Effect of additional sample bias in Meshed Plasma Immersion Ion Deposition (MPIID) on microstructural, surface and mechanical properties of Si-DLC films

Energy Technology Data Exchange (ETDEWEB)

Wu, Mingzhong [State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, Harbin 150001 (China); School of Materials Science & Engineering, Jiamusi University, Jiamusi 154007 (China); Tian, Xiubo, E-mail: xiubotian@163.com [State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, Harbin 150001 (China); Li, Muqin [School of Materials Science & Engineering, Jiamusi University, Jiamusi 154007 (China); Gong, Chunzhi [State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, Harbin 150001 (China); Wei, Ronghua [Southwest Research Institute, San Antonio, TX 78238 (United States)

2016-07-15

Highlights: • A novel Meshed Plasma Immersion Ion Deposition is proposed. • The deposited Si-DLC films possess denser structures and high deposition rate. • It is attributed to ion bombardment of the deposited films. • The ion energy can be independently controlled by an additional bias (novel set up). - Abstract: Meshed Plasma Immersion Ion Deposition (MPIID) using cage-like hollow cathode discharge is a modified process of conventional PIID, but it allows the deposition of thick diamond-like carbon (DLC) films (up to 50 μm) at a high deposition rate (up to 6.5 μm/h). To further improve the DLC film properties, a new approach to the MPIID process is proposed, in which the energy of ions incident to the sample surface can be independently controlled by an additional voltage applied between the samples and the metal meshed cage. In this study, the meshed cage was biased with a pulsed DC power supply at −1350 V peak voltage for the plasma generation, while the samples inside the cage were biased with a DC voltage from 0 V to −500 V with respect to the cage to study its effect. Si-DLC films were synthesized with a mixture of Ar, C{sub 2}H{sub 2} and tetramethylsilane (TMS). After the depositions, scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectrons spectroscopy (XPS), Raman spectroscopy and nanoindentation were used to study the morphology, surface roughness, chemical bonding and structure, and the surface hardness as well as the modulus of elasticity of the Si-DLC films. It was observed that the intense ion bombardment significantly densified the films, reduced the surface roughness, reduced the H and Si contents, and increased the nanohardness (H) and modulus of elasticity (E), whereas the deposition rate decreased slightly. Using the H and E data, high values of H{sup 3}/E{sup 2} and H/E were obtained on the biased films, indicating the potential excellent mechanical and tribological properties of the films. In this

Angular dependence of sputtering yield of TiSi sub 2 layers and analysis of titanium disilicide by SIMS and SCANIIR methods

Energy Technology Data Exchange (ETDEWEB)

Antonov, S L; Valiev, K A; Vasiliev, A G; Orlikovsky, A A [AN SSSR, Moscow (USSR). Inst. of Physics and Technology

1989-11-01

The values of sputtering yields of TiSi{sub 2}, Ti and Si layers are determined for Ar{sup +} (8 keV) bombardment at angles 0-80{sup 0}. It is shown that the theoretical functions that we have suggested for TiSi{sub 2} sputtering yields from angular Ar{sup +} bombardment, which are based on models of bicomponent compounds sputtering under normal ion bombardment, are in good agreement with the experimental curve for TiSi{sub 2}. The calibration curves for the determination of TiSi{sub x} layer compositions by SIMS and SCANIIR methods (in dynamic regime) are presented. It is shown with the help of the static SIMS method (E{sub AR+} = 3 keV) that not only can the TiSi{sub x} composition be determined but the TiSi{sub 2} crystal phase can also be identified. (author).

Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

Science.gov (United States)

Youroukov, S.; Kitova, S.; Danev, G.

2008-05-01

The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO2 together with concurrent bombardment with low energy N2+ ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N2+ ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV).

Properties of TiN coatings deposited by the method of condensation with ion bombardment accompanied by high-energy ion beam

International Nuclear Information System (INIS)

Obrezkov, O.I.; Vershok, B.A.; Dormashev, A.B.; Margulev, I.Ya.; Molchanova, S.A.; Andreev, E.S.; Dervuk, V.V.

2002-01-01

Vacuum-sputtering adapted commercial facility based coating of stainless steel with titanium nitride followed two procedures: ion bombardment condensation (IBC) and IBC under simultaneous effect of ion beam (IB). The deposition rate was equal to 0.1 μm min -1 ; the investigated coatings were characterized by 2.5 μm depth. Comparison analysis of features and characteristics of the specimens, as well as, full-scale tests of a coated cutting tool enabled to make conclusions about advantages of application of IB assisted IBC technology in contrast to the reference IBC technology [ru

Ordering of vacancies on Si(001)

NARCIS (Netherlands)

Zandvliet, Henricus J.W.

1997-01-01

Missing dimer vacancies are always present on the clean Si(001) surface. The vacancy density can be increased by ion bombardment (Xe+, Ar+), etching (O2, Br2, I2, etc.) or Ni contamination. The equilibrium shape at low vacancy concentrations (<0.2¿0.3 monolayers) of these vacancy islands is

A theoretical approach to sputtering due to molecular ion bombardment, 1

International Nuclear Information System (INIS)

Karashima, Shosuke; Ootoshi, Tsukuru; Kamiyama, Masahide; Kim, Pil-Hyon; Namba, Susumu.

1981-01-01

A shock wave model is proposed to explain theoretically the non-linear effects in sputtering phenomena by molecular ion bombardments. In this theory the sputtering processes are separated into two parts; one is due to linear effects and another is due to non-linear effects. The treatment of the linear parts is based on the statistical model by Schwarz and Helms concerning a broad range of atomic collision cascades. The non-linear parts are treated by the model of shock wave due to overlapping cascades, and useful equations to calculate the sputtering yields and the dynamical quantities in the system are derived. (author)

Advances in fast-atom-bombardment mass spectroscopy

International Nuclear Information System (INIS)

Hemling, M.E.

1986-01-01

A comparison of fast atom bombardment and field desorption mass spectrometry was made to determine relative sensitivity and applicability. A series of glycosphingolipids and a series of protected oligonucleotides of known structure were analyzed to ascertain the potential utility of fast atom bombardment mass spectrometry in the structural elucidation of novel compounds in these classes. Negative ion mass markers were also developed. Fast atom bombardment was found to be one-to-two orders of magnitude more sensitive than field desorption based on the analysis of a limited number of compounds from several classes. Superior sensitivity was not universal and field desorption was clearly better in certain cases. In the negative ion mode in particular, fast atom bombardment was found to be a useful tool for the determination of the primary structure of glycosphingolipids and oligonucleotides. Carbohydrate sequence and branching information, and a fatty acid and lipid base composition were readily obtained from the mass spectra of glycosphingolipids while bidirectional nucleotide sequence, nucleotide base, and protecting group assignments were obtained for oligonucleotides. Based on this knowledge, a tentative structure of a human peripheral nervous system glycosphingolipid implicated in certain cases of disorders such as amyotrophic lateral sclerosis, Lou Gehrig's Disease, was proposed. Suitable negative ion mass markers were found in dispersions of poly(ethylene) and poly(propylene)glycols in a triethylenetetramine matrix, a matrix which also proved useful in the analysis of glycosphingolipids. These polyglycol dispersions provided ions for calibration to 2300 daltons

Metallization of ion beam synthesized Si/3C-SiC/Si layer systems by high-dose implantation of transition metal ions

International Nuclear Information System (INIS)

Lindner, J.K.N.; Wenzel, S.; Stritzker, B.

2001-01-01

The formation of metal silicide layers contacting an ion beam synthesized buried 3C-SiC layer in silicon by means of high-dose titanium and molybdenum implantations is reported. Two different strategies to form such contact layers are explored. The titanium implantation aims to convert the Si top layer of an epitaxial Si/SiC/Si layer sequence into TiSi 2 , while Mo implantations were performed directly into the SiC layer after selectively etching off all capping layers. Textured and high-temperature stable C54-TiSi 2 layers with small additions of more metal-rich silicides are obtained in the case of the Ti implantations. Mo implantations result in the formation of the high-temperature phase β-MoSi 2 , which also grows textured on the substrate. The formation of cavities in the silicon substrate at the lower SiC/Si interface due to the Si consumption by the growing silicide phase is observed in both cases. It probably constitutes a problem, occurring whenever thin SiC films on silicon have to be contacted by silicide forming metals independent of the deposition technique used. It is shown that this problem can be solved with ion beam synthesized contact layers by proper adjustment of the metal ion dose

The effects of argon ion bombardment on the corrosion resistance of tantalum

Science.gov (United States)

Ramezani, A. H.; Sari, A. H.; Shokouhy, A.

2017-02-01

Application of ion beam has been widely used as a surface modification method to improve surface properties. This paper investigates the effect of argon ion implantation on surface structure as well as resistance against tantalum corrosion. In this experiment, argon ions with energy of 30 keV and in doses of 1 × 1017-10 × 1017 ions/cm2 were used. The surface bombardment with inert gases mainly produces modified topography and morphology of the surface. Atomic Force Microscopy was also used to patterned the roughness variations prior to and after the implantation phase. Additionally, the corrosion investigation apparatus wear was applied to compare resistance against tantalum corrosion both before and after ion implantation. The results show that argon ion implantation has a substantial impact on increasing resistance against tantalum corrosion. After the corrosion test, scanning electron microscopy (SEM) analyzed the samples' surface morphologies. In addition, the elemental composition is characterized by energy-dispersive X-ray (EDX) analysis. The purpose of this paper was to obtain the perfect condition for the formation of tantalum corrosion resistance. In order to evaluate the effect of the ion implantation on the corrosion behavior, potentiodynamic tests were performed. The results show that the corrosion resistance of the samples strongly depends on the implantation doses.

Si-nanoparticle synthesis using ion implantation and MeV ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Chulapakorn, T.; Wolff, M.; Primetzhofer, D.; Possnert, G. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Sychugov, I.; Suvanam, S.S.; Linnros, J. [Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden); Hallen, A. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Royal Institute of Technology, School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden)

2015-12-15

A dielectric matrix with embedded Si-nanoparticles may show strong luminescence depending on nanoparticles size, surface properties, Si-excess concentration and matrix type. Ion implantation of Si ions with energies of a few tens to hundreds of keV in a SiO{sub 2} matrix followed by thermal annealing was identified as a powerful method to form such nanoparticles. The aim of the present work is to optimize the synthesis of Si-nanoparticles produced by ion implantation in SiO{sub 2} by employing MeV ion irradiation as an additional annealing process. The luminescence properties are measured by spectrally resolved photoluminescence including PL lifetime measurement, while X-ray reflectometry, atomic force microscopy and ion beam analysis are used to characterize the nanoparticle formation process. The results show that the samples implanted at 20%-Si excess atomic concentration display the highest luminescence and that irradiation of 36 MeV {sup 127}I ions affects the luminosity in terms of wavelength and intensity. It is also demonstrated that the nanoparticle luminescence lifetime decreases as a function of irradiation fluence. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Deposition of silicon oxynitride films by low energy ion beam assisted nitridation at room temperature

Energy Technology Data Exchange (ETDEWEB)

Youroukov, S; Kitova, S; Danev, G [Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 109, 113 Sofia (Bulgaria)], E-mail: skitova@clf.bas.bg

2008-05-01

The possibility is studied of growing thin silicon oxynitride films by e-gun evaporation of SiO and SiO{sub 2} together with concurrent bombardment with low energy N{sub 2}{sup +} ions from a cyclotron resonance (ECR) source at room temperature of substrates. The degree of nitridation and oxidation of the films is investigated by means of X-ray spectroscopy. The optical characteristics of the films, their environmental stability and adhesion to different substrates are examined. The results obtained show than the films deposited are transparent. It is found that in the case of SiO evaporation with concurrent N{sub 2}{sup +} ion bombardment, reactive implantation of nitrogen within the films takes place at room temperature of the substrate with the formation of a new silicon oxynitride compound even at low ion energy (150-200 eV)

Molecular projectile effects for kinetic electron emission from carbon- and metal-surfaces bombarded by slow hydrogen ions

Science.gov (United States)

Cernusca, S.; Winter, HP.; Aumayr, F.; Díez Muiño, R.; Juaristi, J. I.

2003-04-01

Total yields for kinetic electron emission (KE) have been determined for impact of hydrogen monomer-, dimer- and trimer-ions (impact energy armour in magnetic fusion devices. The data are compared with KE yields for impact of same projectile ions on atomically clean highly oriented pyrolytic graphite and polycrystalline gold. We discuss KE yields for the different targets if bombarded by equally fast molecular and atomic ions in view to "projectile molecular effects" (different yields per proton for equally fast atomic and molecular ions), which are expected from calculated electronic projectile energy losses in these target materials.

Study and optimisation of SIMS performed with He+ and Ne+ bombardment

International Nuclear Information System (INIS)

Pillatsch, L.; Vanhove, N.; Dowsett, D.; Sijbrandij, S.; Notte, J.; Wirtz, T.

2013-01-01

The combination of the high-brightness He + /Ne + atomic level ion source with the detection capabilities of secondary ion mass spectrometry (SIMS) opens up the prospect of obtaining chemical information with high lateral resolution and high sensitivity on the Zeiss ORION helium ion microscope (HIM). A feasibility study with He + and Ne + ion bombardment is presented in order to determine the performance of SIMS analyses using the HIM. Therefore, the sputtering yields, useful yields and detection limits obtained for metallic (Al, Ni and W) as well as semiconductor samples (Si, Ge, GaAs and InP) were investigated. All the experiments were performed on a Cameca IMS4f SIMS instrument which was equipped with a caesium evaporator and oxygen flooding system. For most of the elements, useful yields in the range of 10 −4 to 3 × 10 −2 were measured with either O 2 or Cs flooding. SIMS experiments performed directly on the ORION with a prototype secondary ion extraction and detection system lead to results that are consistent with those obtained on the IMS4f. Taking into account the obtained useful yields and the analytical conditions, such as the ion current and typical dwell time on the ORION HIM, detection limits in the at% range and better can be obtained during SIMS imaging at 10 nm lateral resolution with Ne + bombardment and down to the ppm level when a lateral resolution of 100 nm is chosen. Performing SIMS on the HIM with a good detection limit while maintaining an excellent lateral resolution (<50 nm) is therefore very promising.

Ion beam processes in Si

International Nuclear Information System (INIS)

Holland, O.W.; Narayan, J.; Fathy, D.

1984-07-01

Observation of the effects of implants of energetic ions at high dose rates into Si have produced some exciting and interesting results. The mechanism whereby displacement damage produced by ions self-anneals during high dose rate implantation is discussed. It is shown that ion beam annealing (IBA) offers in certain situations unique possibilities for damage annealing. Annealing results of the near surface in Si with a buried oxide layer, formed by high dose implantation, are presented in order to illustrate the advantages offered by IBA. It is also shown that ion irradiation can stimulate the epitaxial recrystallization of amorphous overlayers in Si. The nonequilibrium alloying which results from such epitaxial processes is discussed as well as mechanisms which limit the solid solubility during irradiation. Finally, a dose rate dependency for the production of stable damage by ion irradiation at a constant fluence has been observed. For low fluence implants, the amount of damage is substantially greater in the case of high flux rather than low flux implantation

Changes of electronic properties of p-GaN(0 0 0 1) surface after low-energy N+-ion bombardment

Science.gov (United States)

Grodzicki, M.; Mazur, P.; Ciszewski, A.

2018-05-01

The p-GaN(0 0 0 1) crystal with a relatively low acceptor concentration of 5 × 1016 cm-3 is used in these studies, which are carried out in situ under ultrahigh vacuum (UHV) by ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and low-energy electron diffraction (LEED). The p-GaN(0 0 0 1)-(1 × 1) surface is achieved by thermal cleaning. N+-ion bombardment by a 200 eV ion beam changes the surface stoichiometry, enriches it with nitrogen, and disorders it. Such modified surface layer inverts its semiconducting character from p- into n-type. The electron affinity for the already cleaned p-GaN surface and that just after bombardment shows a shift from 2.2 eV to 3.2 eV, as well as an increase of band bending at the vacuum/surface interface from 1.4 eV to 2.5 eV. Proper post-bombardment heating of the sample restores the initial atomic order of the modified layer, leaving its n-type semiconducting character unchanged. The results of the measurements are discussed based on two types of surface states concepts.

MD and BCA simulations of He and H bombardment of fuzz in bcc elements

Science.gov (United States)

Klaver, T. P. C.; Zhang, S.; Nordlund, K.

2017-08-01

We present results of MD simulations of low energy He ion bombardment of low density fuzz in bcc elements. He ions can penetrate several micrometers into sparse fuzz, which allows for a sufficient He flux through it to grow the fuzz further. He kinetic energy falls off exponentially with penetration depth. A BCA code was used to carry out the same ion bombardment on the same fuzz structures as in MD simulations, but with simpler, 10 million times faster calculations. Despite the poor theoretical basis of the BCA at low ion energies, and the use of somewhat different potentials in MD and BCA calculations, the ion penetration depths predicted by BCA are only ∼12% less than those predicted by MD. The MD-BCA differences are highly systematic and trends in the results of the two methods are very similar. We have carried out more than 200 BCA calculation runs of ion bombardment of fuzz, in which parameters in the ion bombardment process were varied. For most parameters, the results show that the ion bombardment process is quite generic. The ion species (He or H), ion mass, fuzz element (W, Ta, Mo, Fe) and fuzz element lattice parameter turned out to have a modest influence on ion penetration depths at most. An off-normal angle of incidence strongly reduces the ion penetration depth. Increasing the ion energy increases the ion penetration, but the rate by which ion energy drops off at high ion energies follows the same exponential pattern as at lower energies.

An ion accelerator facility for the preparation of nuclear bombardement targets

International Nuclear Information System (INIS)

Grime, G.W.; Takacs, J.

1981-01-01

As a result of the demand for increasingly complex nuclear bombardment targets in this laboratory, work has started on the construction of a medium-energy accelerator facility capable of preparing targets both by ion implantation and by heavy-ion sputtering. Basic consideration was given in the design to flexibility and simplicity. The ion source chosen was the Harwell sputter ion gun which is capable of producing ions of practically any element at currents up to several hundred μA. This was modified to suit our specific requirement. The acceleration system was constructed to operate at a maximum of 100 kV, and the beam is focussed by a three-cylinder electrostatic lens. The ions are analysed by 50 0 magnet which is capable of a mass dispersion of 7 mm in the target chamber between adjacent mass numbers at mass 100. A slit feedback system is used to stabilise the energy against short-term fluctuations. The system is fitted with two target chambers; one after the magnet and one after the electrostatic lens. The latter is used for applications such as sputtering. Two dimensional scanning is available in both target chambers for ensuring uniformity of implantation over areas larger than the spot size. Using this apparatus, implanted targets of 3 He and 20 Ne have been prepared. In addition high quality films of refractory metals have been sputtered using Ar or Xe beams. (orig.)

Ion-enhanced gas-surface chemistry: The influence of the mass of the incident ion

International Nuclear Information System (INIS)

Gerlach-Meyer, U.; Coburn, J.W.; Kay, E.

1981-01-01

There are many examples of situations in which a gas-surface reaction rate is increased when the surface is simultaneously subjected to energetic particle bombardment. There are several possible mechanisms which could be involved in this radiation-enhanced gas-surface chemistry. In this study, the reaction rate of silicon, as determined from the etch yield, is measured during irradiation of the Si surface with 1 keV He + , Ne + , and Ar + ions while the surface is simultaneously subjected to fluxes of XeF 2 or Cl 2 molecules. Etch yields as high as 25 Si atoms/ion are observed for XeF 2 and Ar + on Si. A discussion is presented of the extent to which the results clarify the mechanisms responsible for ion-enhanced gas-surface chemistry. (orig.)

The new generations of power components will depend on neutron and/or electron bombardment techniques

International Nuclear Information System (INIS)

Lilen, H.

1976-01-01

Neutron and electron bombardment techniques for materials doping, newly introduced in the fabrication of power semiconductor components: diodes, transistors, thyristors, and triacs are briefly outlined. A neutron bombardment of high purity silicon results in a short-lived 31 Si isotope (from 30 Si) decaying into 31 P. The phosphorus with its five peripheral electrons induces a negative doping (N), and the neutron technique gives a homogeneous doping. Furthermore, silicon bombardment with 1 to 2MeV electrons induces micro-ruptures in the lattice, that act as recombination traps reducing carrier lifetimes. Consequently, gold diffusion techniques can be replaced by electron bombardment with a gain in controlling carrier lifetimes [fr

Formation mechanism of SiC in C-Si system by ion irradiation

International Nuclear Information System (INIS)

Hishita, Shunichi; Aizawa, Takashi; Suehara, Shigeru; Haneda, Hajime

2003-01-01

The irradiation effects of 2 MeV He + , Ne + , and Ar + ions on the film structure of the C-Si system were investigated with RHEED and XPS. The ion dose dependence of the SiC formation was kinetically analyzed. The SiC formation at moderate temperature was achieved by 2 MeV ion irradiation when the thickness of the initial carbon films was appropriate. The evolution process of the SiC film thickness consisted of the 3 stages. The first stage was the steep increase of the SiC, and was governed by the inelastic collision. The second was the gentle increase of the SiC, and was governed by the diffusion. The last was the decrease of the SiC, and was caused by the sputtering. The formation mechanism of the SiC was discussed. (author)

Fluorocarbon based atomic layer etching of Si{sub 3}N{sub 4} and etching selectivity of SiO{sub 2} over Si{sub 3}N{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Li, Chen [Department of Physics, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742 (United States); Metzler, Dominik; Oehrlein, Gottlieb S., E-mail: oehrlein@umd.edu [Department of Materials Science and Engineering, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742 (United States); Lai, Chiukin Steven; Hudson, Eric A. [Lam Research Corporation, 4400 Cushing Parkway, Fremont, California 94538 (United States)

2016-07-15

Angstrom-level plasma etching precision is required for semiconductor manufacturing of sub-10 nm critical dimension features. Atomic layer etching (ALE), achieved by a series of self-limited cycles, can precisely control etching depths by limiting the amount of chemical reactant available at the surface. Recently, SiO{sub 2} ALE has been achieved by deposition of a thin (several Angstroms) reactive fluorocarbon (FC) layer on the material surface using controlled FC precursor flow and subsequent low energy Ar{sup +} ion bombardment in a cyclic fashion. Low energy ion bombardment is used to remove the FC layer along with a limited amount of SiO{sub 2} from the surface. In the present article, the authors describe controlled etching of Si{sub 3}N{sub 4} and SiO{sub 2} layers of one to several Angstroms using this cyclic ALE approach. Si{sub 3}N{sub 4} etching and etching selectivity of SiO{sub 2} over Si{sub 3}N{sub 4} were studied and evaluated with regard to the dependence on maximum ion energy, etching step length (ESL), FC surface coverage, and precursor selection. Surface chemistries of Si{sub 3}N{sub 4} were investigated by x-ray photoelectron spectroscopy (XPS) after vacuum transfer at each stage of the ALE process. Since Si{sub 3}N{sub 4} has a lower physical sputtering energy threshold than SiO{sub 2}, Si{sub 3}N{sub 4} physical sputtering can take place after removal of chemical etchant at the end of each cycle for relatively high ion energies. Si{sub 3}N{sub 4} to SiO{sub 2} ALE etching selectivity was observed for these FC depleted conditions. By optimization of the ALE process parameters, e.g., low ion energies, short ESLs, and/or high FC film deposition per cycle, highly selective SiO{sub 2} to Si{sub 3}N{sub 4} etching can be achieved for FC accumulation conditions, where FC can be selectively accumulated on Si{sub 3}N{sub 4} surfaces. This highly selective etching is explained by a lower carbon consumption of Si{sub 3}N{sub 4} as compared to Si

Sputtering yields of Si and Ni from the I sub(1-x)Si sub(x) system studied by Rutherford backscattering spectrometry

International Nuclear Information System (INIS)

Kim, Su-Chol; Yamaguchi, Satoru; Kataoka, Yoshihide; Iwami, Motohiro; Hiraki, Akio; Satou, Mamoru; Fujimoto, Fuminori.

1982-01-01

Sputtering yields of Si and Ni from thin layer films of Ni-Si compounds (Ni sub(1-x)Si sub(x)), including the pure materials (Ni and Si), caused by 5keV Ar + ion bombardment were investigated using backscattering spectrometry. The sputtering yield for Si from Ni sub(1-x)Si sub(x) increased with increasing Si concentration. However, there is an abrupt decrease in the yield for Si concentrations above NiSi 2 to pure Si. This is in clear contrast to the sputtering yield of Ni from Ni sub(1-x)Si sub(x) which increased with increasing Ni concentration monotonously. These results are discussed on the basis of both the difference in the atomic density and the electronic state of the alloy. (author)

Dynamic behaviors of laser ablated Si particles

International Nuclear Information System (INIS)

Ohyanagi, T.; Murakami, K.; Miyashita, A.; Yoda, O.

1995-01-01

The dynamics of laser-ablated Si particles produced by laser ablation have been investigated by time-and-space resolved X-ray absorption spectroscopy in a time scale ranging from 0 ns to 120 ns with a time resolution of 10 ns. Neutral and charged particles are observed through all X-ray absorption spectra. Assignments of transitions from 2s and 2p initial states to higher Rydberg states of Si atom and ions are achieved, and we experimentally determine the L II,III absorption edges of neutral Si atom (Si 0 ) and Si + , Si 2+ , Si 3+ and Si 4+ ions. The main ablated particles are found to be Si atom and Si ions in the initial stage of 0 ns to 120 ns. The relative amounts depend strongly on times and laser energy densities. We find that the spatial distributions of particles produced by laser ablation are changed with supersonic helium gas bombardment, but no cluster formation takes place. This suggests that a higher-density region of helium gas is formed at the top of the plume of ablated particles, and free expansion of particles is restrained by this helium cloud, and that it takes more than 120 ns to form Si clusters. (author)

Diffusion processes in bombardment-induced surface topography

International Nuclear Information System (INIS)

Robinson, R.S.

1984-01-01

The bombardment of surfaces with moderate energy ions can lead to the development of various micron-sized surface structures. These structures include ridges, ledges, flat planes, pits and cones. The causal phenomena in the production of these features are sputtering, ion reflection, redeposition of sputtered material, and surface diffusion of both impurity and target-atom species. The authors concentrate on the formation of ion bombardment-induced surface topography wherein surface diffusion is a dominant process. The most thoroughly understood aspect of this topography development is the generation of cone-like structures during sputtering. The formation of cones during sputtering has been attributed to three effects. These are: (1) the presence of asperities, defects, or micro-inclusions in the surface layers, (2) the presence of impurities on the surfaces, and (3) particular crystal orientations. (Auth.)

Molecular projectile effects for kinetic electron emission from carbon- and metal-surfaces bombarded by slow hydrogen ions

International Nuclear Information System (INIS)

Cernusca, S.; Winter, H.P.; Aumayr, F.; Diez Muino, R.; Juaristi, J.I.

2003-01-01

Total yields for kinetic electron emission (KE) have been determined for impact of hydrogen monomer-, dimer- and trimer-ions (impact energy <10 keV) on atomically clean surfaces of carbon-fiber inforced graphite used as first-wall armour in magnetic fusion devices. The data are compared with KE yields for impact of same projectile ions on atomically clean highly oriented pyrolytic graphite and polycrystalline gold. We discuss KE yields for the different targets if bombarded by equally fast molecular and atomic ions in view to 'projectile molecular effects' (different yields per proton for equally fast atomic and molecular ions), which are expected from calculated electronic projectile energy losses in these target materials

Molecular projectile effects for kinetic electron emission from carbon- and metal-surfaces bombarded by slow hydrogen ions

CERN Document Server

Cernusca, S; Aumayr, F; Diez-Muino, R; Juaristi, J I

2003-01-01

Total yields for kinetic electron emission (KE) have been determined for impact of hydrogen monomer-, dimer- and trimer-ions (impact energy <10 keV) on atomically clean surfaces of carbon-fiber inforced graphite used as first-wall armour in magnetic fusion devices. The data are compared with KE yields for impact of same projectile ions on atomically clean highly oriented pyrolytic graphite and polycrystalline gold. We discuss KE yields for the different targets if bombarded by equally fast molecular and atomic ions in view to 'projectile molecular effects' (different yields per proton for equally fast atomic and molecular ions), which are expected from calculated electronic projectile energy losses in these target materials.

Materials surface modification by plasma bombardment under simultaneous erosion and redeposition conditions

International Nuclear Information System (INIS)

Hirooka, Y.; Goebel, D.M.; Conn, R.W.

1986-07-01

The first in-depth investigation of surface modification of materials by continuous, high-flux argon plasma bombardment under simultaneous erosion and redeposition conditions have been carried out for copper and 304 stainless steel using the PISCES facility. The plasma bombardment conditions are: incident ion flux range from 10 17 to 10 19 ions sec -1 cm -2 , total ion fluence is controlled between 10 19 and 10 22 ions cm -2 , electron temperature range from 5 to 15 eV, and plasma density range from 10 11 to 10 13 cm -3 . The incident ion energy is 100 eV. The sample temperature is between 300 and 700K. Under redeposition dominated conditions, the material erosion rate due to the plasma bombardment is significantly smaller (by a factor up to 10) than that can be expected from the classical ion beam sputtering yield data. It is found that surface morphologies of redeposited materials strongly depend on the plasma bombardment condition. The effect of impurities on surface morphology is elucidated in detail. First-order modelings are implemented to interpret the reduced erosion rate and the surface evolution. Also, fusion related surface properties of redeposited materials such as hydrogen reemission and plasma driven permeation have been characterized

Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation

Directory of Open Access Journals (Sweden)

Jhovani Bornacelli

2013-01-01

Full Text Available We studied the photoluminescence (PL of Si nanocrystals (Si-NCs embedded in SiO2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm inside the SiO2 achieving a robust and better protected system. After metal ion implantation (Ag or Au, and a subsequent thermal annealing at 600°C under hydrogen-containing atmosphere, the PL signal exhibits a noticeable increase. The ion metal implantation was done at energies such that its distribution inside the silica does not overlap with the previously implanted Si ion . Under proper annealing Ag or Au nanoparticles (NPs could be nucleated, and the PL signal from Si-NCs could increase due to plasmonic interactions. However, the ion-metal-implantation-induced damage can enhance the amount of hydrogen, or nitrogen, that diffuses into the SiO2 matrix. As a result, the surface defects on Si-NCs can be better passivated, and consequently, the PL of the system is intensified. We have selected different atmospheres (air, H2/N2 and Ar to study the relevance of these annealing gases on the final PL from Si-NCs after metal ion implantation. Studies of PL and time-resolved PL indicate that passivation process of surface defects on Si-NCs is more effective when it is assisted by ion metal implantation.

Production of Mg and Al Auger electrons by noble gas ion bombardment of Mg and Al surfaces. [3 KeV, electron promotion

Energy Technology Data Exchange (ETDEWEB)

Ferrante, J; Pepper, S V [National Aeronautics and Space Administration, Cleveland, Ohio (USA). Lewis Research Center

1976-08-01

In this letter the relative production efficiency of Mg and Al Auger electrons by He, Ne, Ar, Kr and Xe ion bombardment as a function of ion energy (<=3 keV) is reported. Some comments on the interpretation of the results in terms of electron promotion are also given.

Erosion behaviour of physically vapour-deposited and chemically vapour-deposited SiC films coated on molybdenum during oxygenated argon beam thinning

International Nuclear Information System (INIS)

Shikama, T.; Kitajima, M.; Fukutomi, M.; Okada, M.

1984-01-01

The erosion behaviour during bombardment with a 5 keV argon beam at room temperature was studied for silicon carbide (SiC) films of thickness of about 10 μm coated on molybdenum by physical vapour deposition (PVD) and chemical vapour deposition (CVD). The PVD SiC (plasma-assisted ion plating) exhibited a greater thinning rate than the CVD SiC film. Electron probe X-ray microanalysis revealed that the chemical composition of PVD SiC was changed to a composition enriched in silicon by the bombardment, and there was a notable change in its surface morphology. The CVD SiC retained its initial chemical composition with only a small change in its surface morphology. Auger electron spectroscopy indicated that silicon oxide was formed on the surface of PVD SiC by the bombardment. The greater thinning rate and easier change in chemical composition in PVD SiC could be attributed to its readier chemical reaction with oxygen due to its more non-uniform structure and weaker chemical bonding. Oxygen was present as one of the impurities in the argon beam. (Auth.)

Alkali depletion and ion-beam mixing in glasses

International Nuclear Information System (INIS)

Arnold, G.W.

1983-01-01

Ion-implantation-induced alkali depletion in simple alkali-silicate glasses (12M 2 O.88SiO 2 ) has been studied for implantations at room temperature and near 77K. Results are consistent with a mechanism for alkali removal, by heavy ion bombardment, based on radiation-enhanced migration and preferential removal of alkali from the outermost layers. Similar results were obtained for mixed-alkali glasses ((12-x)Cs 2 .O.xM 2 O.88SiO 2 ) where, in addition, a mixed-alkali effect may also be operative. Some preliminary experiments with ion implantation through thin Al films on SiO 2 glass and on a phosphate glass show that inter-diffusion takes place and suggest that this ion-mixing technique may be a useful method for altering the physical properties of glass surfaces

Sputtering yields of Si and Ni from the Ni sub(1-x)Si sub(x) system studied by Rutherford backscattering spectrometry

Energy Technology Data Exchange (ETDEWEB)

Kim, S C; Yamaguchi, S; Kataoka, Y; Iwami, M; Hiraki, A [Osaka Univ., Suita (Japan). Faculty of Engineering; Satou, M; Fujimoto, F

1982-01-01

Sputtering yields of Si and Ni from thin layer films of Ni-Si compounds (Ni sub(1-x)Si sub(x)), including the pure materials (Ni and Si), caused by 5keV Ar/sup +/ ion bombardment were investigated using backscattering spectrometry. The sputtering yield for Si from Ni sub(1-x)Si sub(x) increased with increasing Si concentration. However, there is an abrupt decrease in the yield for Si concentrations above NiSi/sub 2/ to pure Si. This is in clear contrast to the sputtering yield of Ni from Ni sub(1-x)Si sub(x) which increased with increasing Ni concentration monotonously. These results are discussed on the basis of both the difference in the atomic density and the electronic state of the alloy.

Au L-shell ionization by Si and S ions

International Nuclear Information System (INIS)

Berinde, A.; Ciortea, C.; Enulescu, A.; Fluerasu, D.; Piticu, I.; Zoran, V.; Trautmann, D.

1984-01-01

We present the following experimental results on Au L-shell ionization: (1) in the bombarding energy range 0.25-2.5 MeV/u, absolute X-ray yields and the L 3 -vacancy integral alignment for Si, and cross section ratios for Si and S as projectiles; (2) at 32 MeV sulphur energy, subshell ionization probability ratios and the components A 20 (b) and A 22 (b) of the statistical tensor describing the L 3 -vacancy for impact parameters b=20-450 fm. A comparison of the data to SCA calcualtions reveals, except perhaps for the differential alignment, important discrepancies relative to the theoretical predictions. (orig./BRB)

The structure modification of Si-SiO2 irradiated by Fe+ ion

International Nuclear Information System (INIS)

Jin Tao; Ma Zhongquan; Guo Qi

1992-01-01

The effect of the iron ion implantation on the oxide surface and SiO 2 -Si interface of MOS structure was studied by X-ray photo-electron spectroscopy (XPS), and the chemical states of compounds formed were examined. The results obtained show that in the surface layers of SiO 2 the pure Si micro-regions are formed under the implantation and the interface layers of SiO 2 the pure Si micro-regions are formed under the implantation and the interface thickness is almost doubled that leads to failure of MOS capacitors. The physical and chemical mechanisms of MOS structure change by Fe + ion implantation are also discussed and analyzed

Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts

International Nuclear Information System (INIS)

Zhang, B.; Yu, W.; Zhao, Q.T.; Buca, D.; Breuer, U.; Hartmann, J.-M.; Holländer, B.; Mantl, S.; Zhang, M.; Wang, X.

2013-01-01

We have investigated the morphology and electrical properties of NiSiGe/SiGe contact by C + ions pre-implanted into relaxed Si 0.8 Ge 0.2 layers. Cross-section transmission electron microscopy revealed that both the surface and interface of NiSiGe were improved by C + ions implantation. In addition, the effective hole Schottky barrier heights (Φ Bp ) of NiSiGe/SiGe were extracted. Φ Bp was observed to decrease substantially with an increase in C + ion implantation dose

Diamond-like carbon layers modified by ion bombardment during growth and researched by Resonant Ultrasound Spectroscopy

Czech Academy of Sciences Publication Activity Database

Kocourek, Tomáš; Jelínek, Miroslav; Písařík, Petr; Remsa, Jan; Janovská, Michaela; Landa, Michal; Zemek, Josef; Havránek, Vladimír

2017-01-01

Roč. 417, Sep (2017), s. 213-217 ISSN 0169-4332 R&D Projects: GA ČR(CZ) GA15-05864S Institutional support: RVO:68378271 ; RVO:61388998 ; RVO:61389005 Keywords : in-situ ion bombardment * pulsed laser deposition * diamond-like carbon * hybrid technology * flm modification Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics) Impact factor: 3.387, year: 2016

Treatment of PVC using an alternative low energy ion bombardment procedure

Science.gov (United States)

Rangel, Elidiane C.; dos Santos, Nazir M.; Bortoleto, José Roberto R.; Durrant, Steven F.; Schreiner, Wido H.; Honda, Roberto Y.; Rangel, Rita de Cássia C.; Cruz, Nilson C.

2011-12-01

In many applications, polymers have progressively substituted traditional materials such as ceramics, glasses, and metals. Nevertheless, the use of polymeric materials is still limited by their surface properties. Frequently, selective modifications are necessary to suit the surface to a given application. Amongst the most common treatments, plasma immersion ion implantation (PIII) has attracted the attention of many researchers owing to its versatility and practicality. This method, however, requires a power supply to provide high voltage (tens of kV) negative pulses, with a controlled duty cycle, width and frequency. Owing to this, the implementation of PIII on the industrial scale can become economically inviable. In this work, an alternative plasma treatment that enables low energy ion bombardment without the need of a high voltage pulse generator is presented. To evaluate the efficiency of the treatment of polymers, polyvinylchloride, PVC, specimens were exposed to 5 Pa argon plasmas for 3600 s, at excitation powers, P, of between 10 and 125 W. Through contact angle and atomic force microscopy data, the influence of P on the wettability, surface free energy and roughness of the samples was studied. Surface chemical composition was measured by X-ray photoelectron spectroscopy, XPS. To evaluate the effect of aging under atmospheric conditions, contact angle and XPS measurements were performed one and 1334 days after the treatment. The plasma potential and ion density around the driven electrode were determined from Langmuir probe measurements while the self-bias potential was derived with the aid of an oscilloscope. From these data it was possible to estimate the mean energy of ions bombarding the PVC surface. Chlorine, carbon and oxygen contamination were detected on the surface of the as-received PVC. Upon exposure to the plasma, the proportion of chlorine was observed to decrease while that of oxygen increased. Consequently, the wettability and surface energy

Treatment of PVC using an alternative low energy ion bombardment procedure

International Nuclear Information System (INIS)

Rangel, Elidiane C.; Santos, Nazir M. dos; Bortoleto, José Roberto R.; Durrant, Steven F.; Schreiner, Wido H.; Honda, Roberto Y.; Cássia C Rangel, Rita de; Cruz, Nilson C.

2011-01-01

In many applications, polymers have progressively substituted traditional materials such as ceramics, glasses, and metals. Nevertheless, the use of polymeric materials is still limited by their surface properties. Frequently, selective modifications are necessary to suit the surface to a given application. Amongst the most common treatments, plasma immersion ion implantation (PIII) has attracted the attention of many researchers owing to its versatility and practicality. This method, however, requires a power supply to provide high voltage (tens of kV) negative pulses, with a controlled duty cycle, width and frequency. Owing to this, the implementation of PIII on the industrial scale can become economically inviable. In this work, an alternative plasma treatment that enables low energy ion bombardment without the need of a high voltage pulse generator is presented. To evaluate the efficiency of the treatment of polymers, polyvinylchloride, PVC, specimens were exposed to 5 Pa argon plasmas for 3600 s, at excitation powers, P, of between 10 and 125 W. Through contact angle and atomic force microscopy data, the influence of P on the wettability, surface free energy and roughness of the samples was studied. Surface chemical composition was measured by X-ray photoelectron spectroscopy, XPS. To evaluate the effect of aging under atmospheric conditions, contact angle and XPS measurements were performed one and 1334 days after the treatment. The plasma potential and ion density around the driven electrode were determined from Langmuir probe measurements while the self-bias potential was derived with the aid of an oscilloscope. From these data it was possible to estimate the mean energy of ions bombarding the PVC surface. Chlorine, carbon and oxygen contamination were detected on the surface of the as-received PVC. Upon exposure to the plasma, the proportion of chlorine was observed to decrease while that of oxygen increased. Consequently, the wettability and surface energy

Improving Passivation Process of Si Nano crystals Embedded in SiO2 Using Metal Ion Implantation

International Nuclear Information System (INIS)

Bornacelli, J.; Esqueda, J.A.R.; Fernandez, L.R.; Oliver, A.

2013-01-01

We studied the photoluminescence (PL) of Si nano crystals (Si-NCs) embedded in SiO 2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm) inside the SiO 2 achieving a robust and better protected system. After metal ion implantation (Ag or Au), and a subsequent thermal annealing at 600°C under hydrogen-containing atmosphere, the PL signal exhibits a noticeable increase. The ion metal implantation was done at energies such that its distribution inside the silica does not overlap with the previously implanted Si ion . Under proper annealing Ag or Au nanoparticles (NPs) could be nucleated, and the PL signal from Si-NCs could increase due to plasmonic interactions. However, the ion-metal-implantation-induced damage can enhance the amount of hydrogen, or nitrogen, that diffuses into the SiO 2 matrix. As a result, the surface defects on Si-NCs can be better passivated, and consequently, the PL of the system is intensified. We have selected different atmospheres (air, H 2 /N 2 and Ar) to study the relevance of these annealing gases on the final PL from Si-NCs after metal ion implantation. Studies of PL and time-resolved PL indicate that passivation process of surface defects on Si-NCs is more effective when it is assisted by ion metal implantation.

Ion-bombardment-induced reduction in vacancies and its enhanced effect on conductivity and reflectivity in hafnium nitride films

Energy Technology Data Exchange (ETDEWEB)

Gu, Zhiqing; Wang, Jiafu; Hu, Chaoquan; Zhang, Xiaobo; Dang, Jianchen; Gao, Jing; Zheng, Weitao [Jilin University, School of Materials Science and Engineering, Key Laboratory of Mobile Materials, MOE, and State Key Laboratory of Superhard Materials, Changchun (China); Zhang, Sam [Nanyang Technological University, School of Mechanical and Aerospace Engineering, Singapore (Singapore); Wang, Xiaoyi [Chinese Academy of Sciences, Key Laboratory of Optical System Advanced Manufacturing Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Changchun (China); Chen, Hong [Jilin University, Department of Control Science and Engineering, Changchun (China)

2016-08-15

Although the role of ion bombardment on electrical conductivity and optical reflectivity of transition metal nitrides films was reported previously, the results were controversial and the mechanism was not yet well explored. Here, we show that proper ion bombardment, induced by applying the negative bias voltage (V{sub b}), significantly improves the electrical conductivity and optical reflectivity in rocksalt hafnium nitride films regardless of level of stoichiometry (i.e., in both near-stoichiometric HfN{sub 1.04} and over-stoichiometric HfN{sub 1.17} films). The observed improvement arises from the increase in the concentration of free electrons and the relaxation time as a result of reduction in nitrogen and hafnium vacancies in the films. Furthermore, HfN{sub 1.17} films have always much lower electrical conductivity and infrared reflectance than HfN{sub 1.04} films for a given V{sub b}, owing to more hafnium vacancies because of larger composition deviation from HfN exact stoichiometry (N:Hf = 1:1). These new insights are supported by good agreement between experimental results and theoretical calculations. (orig.)

Nano-scale pattern formation on the surface of HgCdTe produced by ion bombardment

Energy Technology Data Exchange (ETDEWEB)

Smirnov, A.B.; Gudymenko, A.I.; Kladko, V.P.; Korchevyi, A.A.; Savkina, R.K.; Sizov, F.F.; Udovitska, R.S. [V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kiev (Ukraine)

2015-08-15

Presented in this work are the results concerning formation of nano-scale patterns on the surface of a ternary compound Hg{sub 1-x}Cd{sub x}Te (x ∝ 0.223). Modification of this ternary chalcogenide semiconductor compound was performed using the method of oblique-incidence ion bombardment with silver ions, which was followed by low-temperature treatment. The energy and dose of implanted ions were 140 keV and 4.8 x 10{sup 13} cm{sup -2}, respectively. Atomic force microscopy methods were used for the surface topography characterization. The structural properties of MCT-based structure was analyzed using double and triple crystal X-ray diffraction to monitor the disorder and strain of the implanted region as a function of processing conditions. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Auger processes in ion-surface collisions

International Nuclear Information System (INIS)

Zampieri, Guillermo.

1985-01-01

Bombardment of solid targets with low-energy noble gas ions can produce Auger electron emission from the target atoms and/or from the projectiles. In the case of Auger emission from the projectile, Auger emission was observed during the bombardment of Na, Mg, Al and Si with Ne + ions. This emission was studied as a function of the energy, incidence angle and charge state of the projectile. From the analysis, it is concluded that the emission originates in the decay in vacuum of excited and reflected Ne atoms, moving outside the surface. Auger emission was not observed during the bombardment of K, V and Ni with Ar + ions; Zr and Cs with Kr + , and Xe + ions, respectively; and Li and Be with He + ions. In the case of Auger emission from the target, studies of certain aspects of the Na, Mg and Al Auger electron emission spectra were made. The results allow to identify two components in the Auger feature, coresponding to two kinds of Auger transition. The total spectra results from the superposition of both kinds of emission. Auger spectra from K obtained during Ar + and K + bombardment of K-implanted Be, Mg, Al and Cu were also analyzed. Similar to the Na, Mg and Al Auger spectra, the K Auger feature is composed of an atomic like peak superimposed on a bandlike structure. Both components correspond to Auger transitions in K atoms with a 3p vacancy, occuring in vacuum and inside the solid, respectively. (M.E.L.) [es

Suppression of self-organized surface nanopatterning on GaSb/InAs multilayers induced by low energy oxygen ion bombardment by using simultaneously sample rotation and oxygen flooding

Science.gov (United States)

Beainy, Georges; Cerba, Tiphaine; Bassani, Franck; Martin, Mickaël; Baron, Thierry; Barnes, Jean-Paul

2018-05-01

Time of flight secondary ion mass spectrometry (ToF-SIMS) is a well-adapted analytical method for the chemical characterization of concentration profiles in layered or multilayered materials. However, under ion beam bombardment, initially smooth material surface becomes morphologically unstable. This leads to abnormal secondary ion yields and depth profile distortions. In this contribution, we explore the surface topography and roughening evolution induced by O2+ ion bombardment on GaSb/InAs multilayers. We demonstrate the formation of nanodots and ripples patterning according to the ion beam energy. Since the latter are undesirable for ToF-SIMS analysis, we managed to totally stop their growth by using simultaneously sample rotation and oxygen flooding. This unprecedented coupling between these two latter mechanisms leads to a significant enhancement in depth profiles resolution.

MeV ion induced damage production and accumulation in silicon

International Nuclear Information System (INIS)

Suzuki, Motoyuki; Okazaki, Makoto; Shin, Kazuo; Takagi, Ikuji; Yoshida, Koji

1993-01-01

Measurement and analysis were made for radiation damages in silicon induced by MeV ions. A single crystal silicon was bombarded by 800 keV O + and 700 keV Si + with the dose from 2x10 15 up to 8x10 15 cm -2 . And defects induced by the ion bombardments were observed by the channeling method. Some new modifications were made to the analysis of the channeling RBS spectrum so that the accuracy of the unfolded defect distribution may be improved. A new model of point-defect clustering and amorphous formation was proposed, which well reproduced the observed defect distribution in silicon. (author)

Surface Morphologies of Ti and Ti-Al-V Bombarded by 1.0-MeV Au+ Ions

Science.gov (United States)

Garcia, M. A.; Rickards, J.; Cuerno, R.; Trejo-Luna, R.; Cañetas-Ortega, J.; de la Vega, L. R.; Rodríguez-Fernández, L.

2017-12-01

Ion implantation is known to enhance the mechanical properties of biomaterials such as, e.g., the wear resistance of orthopedic joints. Increasing the surface area of implants may likewise improve their integration with, e.g., bone tissue, which requires surface features with sizes in the micron range. Ion implantation of biocompatible metals has recently been demonstrated to induce surface ripples with wavelengths of a few microns. However, the physical mechanisms controlling the formation and characteristics of these patterns are yet to be understood. We bombard Ti and Ti-6Al-4V surfaces with 1.0-MeV Au+ ions. Analysis by scanning electron and atomic force microscopies shows the formation of surface ripples with typical dimensions in the micron range, with potential indeed for biomedical applications. Under the present specific experimental conditions, the ripple properties are seen to strongly depend on the fluence of the implanted ions while being weakly dependent on the target material. Moreover, by examining experiments performed for incidence angle values θ =8 ° , 23°, 49°, and 67°, we confirm the existence of a threshold incidence angle for (ripple) pattern formation. Surface indentation is also used to study surface features under additional values of θ , agreeing with our single-angle experiments. All properties of the surface structuring process are very similar to those found in the production of surface nanopatterns under low-energy ion bombardment of semiconductor targets, in which the stopping power is dominated by nuclear contributions, as in our experiments. We consider a continuum model that combines the effects of various physical processes as originally developed in that context, with parameters that we estimate under a binary-collision approximation. Notably, reasonable agreement with our experimental observations is achieved, even under our high-energy conditions. Accordingly, in our system, ripple formation is determined by mass

Ion-materials interactions and their application

International Nuclear Information System (INIS)

Whitlow, H.J.

1998-01-01

The interaction of energetic ions and other charged particles with solid matter leads to a wealth of physical processes. This thesis comprises a collection of papers and an introductory commentary, which explore some aspects of how these interactions may be used for: (i) Characterisation of thin surface layers of material, (ii) characterisation of energetic charged particles, and (iii) modification of materials by ion bombardment. In (i) Elastic Recoil Detection using a detector system for measurement of Time of Flight and kinetic energy of recoiling target atoms has been developed as a quantitative method for elemental depth profiling of thin (0.5-1 μm) surface layers. This method has been applied to the study of reactions of metal/III-V structures, which are of importance for the semiconductor industry. (ii) MeV-ion - materials interactions have been used as the basis for developing Si p-i-n detectors for the CHICSi programme which will undertake experimental studies of heavy ion collisions at intermediate energies. This involved development and testing of extremely thin (10-12 μm) Si ΔE detectors for characterising light- and intermediate mass charged particles as well as calibration of Si p-i-n detectors and their susceptibility to radiation damage. (iii) Nuclear Reaction Analysis (NRA) with resonant nuclear reactions has been used to study modification of material with ion beams. In the first study, the accumulation of fluorine in BF 2 + ion implanted WSi 2 solid diffusion sources was investigated. The second study investigated if there was a correlation between photoluminescence and segregation of hydrogen to buried heterojunctions in plasma-etched III-V quantum-well structures. The ion bombardment in this case was during etching in an Ar+CH 4 plasma using an Electron Cyclotron Resonance (ECR) source. (author)

Miniature electron bombardment evaporation source: evaporation rate measurement

International Nuclear Information System (INIS)

Nehasil, V.; Masek, K.; Matolin, V.; Moreau, O.

1997-01-01

Miniature electron beam evaporation sources which operate on the principle of vaporization of source material, in the form of a tip, by electron bombardment are produced by several companies specialized in UHV equipment. These sources are used primarily for materials that are normally difficult to deposit due to their high evaporation temperature. They are appropriate for special applications such as heteroepitaxial thin film growth requiring a very low and well controlled deposition rate. A simple and easily applicable method of evaporation rate control is proposed. The method is based on the measurement of ion current produced by electron bombardment of evaporated atoms. The absolute evaporation flux values were measured by means of the Bayard-Alpert ion gauge, which enabled the ion current vs evaporation flux calibration curves to be plotted. (author). 1 tab., 4 figs., 6 refs

Study on the desorption yield for natural botanic sample induced by energetic heavy ions

International Nuclear Information System (INIS)

Xue, J.M.; Wang, Y.G.; Du, G.H.; Yan, S.; Zhao, W.J.

2002-01-01

The dependence of desorption yield for the natural botanic sample bombarded with heavy ion on the electronic stopping power (S e ) and dose has been measured by weighing sample mass before and after irradiation. Primary ions including 50 keV N + , 1.5 MeV F + , 3.0 MeV F 2+ , 4.0 MeV F 2+ and 3.0 MeV Si 2+ were used in the experiment. Three megaelectron volts of F 2+ with doses ranging from 4x10 15 to 4x10 16 ions/cm 2 were used in order to investigate the influence of ion dose. A mass spectrum from the sample bombarded with 3 MeV Si 2+ was also taken for a better understanding of the desorption process. Results show that the natural botanic sample is very easily to be desorpted. The yield of MeV heavy ions can be as high as thousands CH 2 O/ion, and significantly depends on both the S e and dose. The measured yields increase quickly with S e , but drop down with increasing ion dose. These results fit roughly with the prediction of the pressure pulse model

Light-emitting Si nanostructures formed by swift heavy ions in stoichiometric SiO2 layers

Science.gov (United States)

Kachurin, G. A.; Cherkova, S. G.; Marin, D. V.; Kesler, V. G.; Volodin, V. A.; Skuratov, V. A.

2012-07-01

Three hundred and twenty nanometer-thick SiO2 layers were thermally grown on the Si substrates. The layers were irradiated with 167 MeV Xe ions to the fluences ranging between 1012 cm-2 and 1014 cm-2, or with 700 MeV Bi ions in the fluence range of 3 × 1012-1 × 1013 cm-2. After irradiation the yellow-orange photoluminescence (PL) band appeared and grew with the ion fluences. In parallel optical absorption in the region of 950-1150 cm-1, Raman scattering and X-ray photoelectron spectroscopy evidenced a decrease in the number of Si-O bonds and an increase in the number of Si-coordinated atoms. The results obtained are interpreted as the formation of the light-emitting Si-enriched nanostructures inside the tracks of swift heavy ions through the disproportionation of SiO2. Ionization losses of the ions are regarded as responsible for the processes observed. Difference between the dependences of the PL intensity on the fluences of Xe and Bi ions are ascribed to their different stopping energy, therewith the diameters of the tracks of Xe and Bi ions were assessed as <3 nm and ˜10 nm, respectively. The observed shift of the PL bands, induced by Xe and Bi ions, agrees with the predictions of the quantum confinement theory.

Secondary ion emission from ultra-thin oxide layers bombarded by energetic (MeV) heavy ions: depth of origin and layer homogeneity

International Nuclear Information System (INIS)

Allali, H.; Nsouli, B.; Thomas, J.P.; Cabaud, B.; Fuchs, G.; Hoareau, A.; Treilleux, M.; Danel, J.S.

1993-09-01

The escape depth of the secondary ions resulting from electronic sputtering of fast heavy ions in inorganic thin films has been investigated. Chromium layers deposited onto SiO 2 substrate as well as SiO x layers deposited onto chromium substrate have been characterized by secondary ion emission mass spectrometry (SIMS) in combination with time-of-flight (TOF) mass analysis (also referred as HSF-SIMS). These crossed experiments lead to a value around 1 nm for SiO x layers and 0.5 nm for Cr layers. On the other hand, HSF-SIMS can be used to correlate the intensity of the secondary ion emission to the film coverage rate and (or) the morphology of particular films like those produced by Low Energy Cluster Beam Deposition (LECBD). Using Sb deposits, the non-linear relationship between ion emission and coverage is interpreted in terms of sputtering enhancement in the individual supported clusters. (author) 22 refs., 9 figs., 1 tab

Low-energy ion bombardment of frozen bacterial spores and its relevance to interplanetary space

Energy Technology Data Exchange (ETDEWEB)

Tuleta, M.; Gabla, L. [Jagiellonian Univ., Institute of Physics, Cracow (Poland); Szkarlat, A. [Clinical Children' s Hospital of the Jagiellonian Univ., Medical College, Lab. of Microbiology, Cracow (Poland)

2005-04-01

The panspermia hypothesis is concerned with the dissemination of life in space in the form of simple micro-organisms. During an interplanetary journey the micro-organisms are subjected to the action of, among others, the solar wind. We have simulated experimentally such conditions bombarding frozen bacterial spores with low-energy hydrogen ions. On the basis of the results obtained and our earlier research, a new look at the panspermia hypothesis is discussed. The general conclusion is that unprotected naked spores, their conglomerates and protected spores can survive attack of the solar wind, although to various degrees. (authors)

Low-energy ion bombardment of frozen bacterial spores and its relevance to interplanetary space

International Nuclear Information System (INIS)

Tuleta, M.; Gabla, L.; Szkarlat, A.

2005-01-01

The panspermia hypothesis is concerned with the dissemination of life in space in the form of simple micro-organisms. During an interplanetary journey the micro-organisms are subjected to the action of, among others, the solar wind. We have simulated experimentally such conditions bombarding frozen bacterial spores with low-energy hydrogen ions. On the basis of the results obtained and our earlier research, a new look at the panspermia hypothesis is discussed. The general conclusion is that unprotected naked spores, their conglomerates and protected spores can survive attack of the solar wind, although to various degrees. (authors)

Light ions cyclotron bombardment to simulate fast neutron radiation damage in nuclear materials

International Nuclear Information System (INIS)

Segura, E.; Lucki, G.; Aguiar, D.

1984-01-01

The applicability and limitations of the use of cyclotron light ions bombardment to simulate the effects of the neutron irradiation are presented. Light ions with energies of about 10 MeV are capable to produce homogeneous damage in specimens suitable for measuring bulk mechanical properties although their low damage rate of 10 -5 dpa.sec -1 limit the dose range to a few dpa. On the other hand, cyclotron alpha particle implantation provides a fast and convenient way of introducing helium with a minimum of side effects so that we can take advantage of this technique to get better understanding of the mechanism by which this insoluble gas produces high temperature embrittlement. Some experimental details such as dimensions and cooling techniques are described. Finally a description of the infrastructure for cyclotron alpha particle implantation and a creep-test facility of the Division of Radiation Damage at IPEN-CNEN/SP are presented. (Author) [pt

L-subshell ionization studies of Au for α-particle and lithium-ion bombardment

International Nuclear Information System (INIS)

Dhal, B.B.; Nandi, T.; Padhi, H.C.; Trautmann, D.

1995-01-01

L-subshell ionization of Au has been investigated for α-particle and lithium-ion bombardments with energies 0.54-1.74 MeV u -1 and 0.65-1.44 MeV u -1 , respectively. Comparison of experimental x-ray production cross sections with the predictions of the ECPSSR and SCA theories shows reasonably good agreement for L α and L β x-rays, whereas for L γ and L γ1+5 the ECPSSR theory underestimates the cross sections by about 60% for both α-particle and lithium-ion impact, and the SCA theory agrees reasonably well. The ECPSSR theory underestimates the L 1 - and L 2 -subshell ionization cross sections and gives good agreement for the L 3 -subshell, whereas the SCA theory overestimates the L 3 -subshell ionization cross sections and gives good agreement for L 1 and L 2 . The experimental data for the total-ionization cross sections are within 25% of the predictions of both the theories. (Author)

Synthesizing single-phase β-FeSi2 via ion beam irradiations of Fe/Si bilayers

International Nuclear Information System (INIS)

Milosavljevic, M.; Dhar, S.; Schaaf, P.; Bibic, N.; Lieb, K.P.

2001-01-01

This paper presents results on the direct synthesis of the β-FeSi 2 phase by ion beam mixing of Fe/Si bilayers with Xe ions. The influence of the substrate temperature, ion fluence and energy on the growth of this phase was investigated using Rutherford backscattering (RBS), X-ray diffraction (XRD) and conversion electron Moessbauer spectroscopy (CEMS). Complete growth of single-phase β-FeSi 2 was achieved by 205 keV Xe ion irradiation to a fluence of 2x10 16 ions/cm 2 at 600 deg. C. We propose a two-step reaction mechanism involving thermal and ion beam energy deposition

Heteroepitaxy of zinc-blende SiC nano-dots on Si substrate by organometallic ion beam

International Nuclear Information System (INIS)

Matsumoto, T.; Kiuchi, M.; Sugimoto, S.; Goto, S.

2006-01-01

The self-assembled SiC nano-dots were fabricated on Si(111) substrate at low-temperatures using the organometallic ion beam deposition technique. The single precursor of methylsilicenium ions (SiCH 3 + ) with the energy of 100 eV was deposited on Si(111) substrate at 500, 550 and 600 deg. C. The characteristics of the self-assembled SiC nano-dots were analyzed by reflection high-energy electron diffraction (RHEED), Raman spectroscopy and atomic force microscope (AFM). The RHEED patterns showed that the crystal structure of the SiC nano-dots formed on Si(111) substrate was zinc-blende SiC (3C-SiC) and it was heteroepitaxy. The self-assembled SiC nano-dots were like a dome in shape, and their sizes were the length of 200-300 nm and the height of 10-15 nm. Despite the low-temperature of 500 deg. C as SiC crystallization the heteroepitaxial SiC nano-dots were fabricated on Si(111) substrate using the organometallic ion beam

Heavy-ion induced secondary electron emission from Mg, Al, and Si partially covered with oxygen

International Nuclear Information System (INIS)

Weng, J; Veje, E.

1984-01-01

We have bombarded Mg, Al, and Si with 80 keV Ar + ions and measured the secondary electron emission yields at projectile incidence angles from 0 0 to 85 0 , with oxygen present at the target as well as under UHV conditions. The total secondary electron emission yields are found to depend fairly much on the amount of oxygen present. The three elements studied show relatively large individual variations. For all three elements, and with as well as without oxygen present, the relative secondary electron emission yield is observed to vary as 1/cos v, where v is the angle of incidence of the projectiles. This seems to indicate that the secondary electron production is initiated uniformly along the projectile path in the solid, in a region close to the surface. The results are discussed, and it is tentatively suggested, that the increase in secondary electron emission, caused by the presence of oxygen, originates from neutralization of sputtered oxygen, which initially is sitting as O 2- ions. (orig.)

Mechanical properties of MeV ion-irradiated SiC/SiC composites characterized by indentation technique

International Nuclear Information System (INIS)

Park, J.Y.; Park, K.H.; Kim, W.; Kishimoto, H.; Kohyama, A.

2007-01-01

Full text of publication follows: SiC/SiC composites have been considered as a structural material for advanced fusion concepts. In the core of fusion reactor, those SiC/SiC composites are experienced the complex attacks such as strong neutron, high temperature and transmuted gases. One of the vital data for designing the SiC/SiC composites to the fusion reactor is mechanical properties under the severe neutron irradiation. In this work, various SiC/SiC composites were prepared by the different fabrication processes like CVI (chemical vapor infiltration), WA-CVI (SiC whisker assisted CVI) and hot-pressed method. The expected neutron irradiation was simulated by a silicon self-ion irradiation at a DuET facility; Dual-beam for Energy Technologies, Kyoto University. The irradiation temperature were 600 deg. C and 1200 deg. C, and the irradiation does were 5 dpa and 20 dpa, respectively. The 5.1 MeV Si ions were irradiated to the intrinsic CVI-SiC, SiC whisker reinforced SiC and SiC composites produced by hot-press method. The mechanical properties like hardness, elastic modulus and fracture toughness were characterized by an indentation technique. The ion irradiation caused the increase of the hardness and fracture toughness, which was dependent on the irradiation temperature. SiC whisker reinforcement in the SiC matrix accelerated the increase of the fracture toughness by the ion irradiation. For SiC/SiC composites after the ion irradiation, this work will provide the additional data for the mechanical properties as well as the effect of SiC whisker reinforcement. (authors)

High energy Xe{sup +} ion beam induced ripple structures on silicon

Energy Technology Data Exchange (ETDEWEB)

Hanisch, Antje; Grenzer, Joerg; Facsko, Stefan; Winkler, Ingolf [Forschungszentrum Dresden-Rossendorf, Institute for Ion Beam Physics and Materials Research, Dresden (Germany); Biermanns, Andreas; Grigorian, Souren; Pietsch, Ullrich [University of Siegen (Germany). Institute of Physics

2008-07-01

Ion beam bombardment on semiconductor surfaces leads to well-defined morphological structures in the nanoscale range. Due to the impact of ions a self-organized wave-like surface structure develops. Ion bombardment causes an amorphization of a surface-adjacent layer of several nanometers and creates a periodical structure on the surface as well as at the amorphous-crystalline interface. We investigate the dependence of the periodicity on the crystallography of (100) silicon bombarded with Xe{sup +} ions, the ion beam incidence and the azimutal angle of the sample surface. So far we found that the ripple wavelength scales with the ion energy in a range of 5 to 70 keV. In order to understand the initiation of the ripple formation we also ask the question which role the initial surface structure plays. Therefore we investigate the formation of ripples on pre-structured and rough surfaces such as wafers with an intentional miscut. Therefore, we not only introduce a certain initial roughness but also vary the orientation of the (100) lattice plane in respect to the surface. We distinguish between ion beam induced surface effects (sputter erosion) and the influence of the crystalline Si lattice (strain) on the ripple formation.

Directional effect on coloration in LiF crystal by H{sup +} and H{sub 2}{sup +} ion bombardment

Energy Technology Data Exchange (ETDEWEB)

Mingle, Gan; Naramoto, Hiroshi; Aoki, Yasushi; Yamamoto, Shunya; Jianer, Zeng; Takeshita, Hidefumi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

1997-03-01

In the present paper, the first results are reported about the coloration in LiF crystals induced by bombardments of single hydrogen ions (H{sup +}) and molecular hydrogen ions (H{sub 2}{sup +}) with the same velocity under the <100> aligned and random conditions. For the single hydrogen ion irradiation, the coloration is rather simple. The F-type color center absorption under the <100> aligned condition becomes larger than that under the random condition with the dose increase because of larger fraction of electronic energy loss under channeling condition. On the contrary, the coloration for the molecular ions does not show big channeling effect. In the low dose region some difference can be seen but the difference of coloration is not observed any more with the dose increase. The pronounced coloration for molecular ions under the channeling condition is observed in comparison with that for single ions. (author)

Ion beam deposited epitaxial thin silicon films

International Nuclear Information System (INIS)

Orrman-Rossiter, K.G.; Al-Bayati, A.H.; Armour, D.G.; Donnelly, S.E.; Berg, J.A. van den

1991-01-01

Deposition of thin films using low energy, mass-separated ion beams is a potentially important low temperature method of producing epitaxial layers. In these experiments silicon films were grown on Si (001) substrates using 10-200 eV 28 Si + and 30 Si + ions at substrate temperatures in the range 273-1073 K, under ultrahigh-vacuum conditions (deposition pressure -7 Pa). The film crystallinity was assessed in situ using medium energy ion scattering (MEIS). Films of crystallinity comparable to bulk samples were grown using 10-40 eV 28 Si + and 30 Si + ions at deposition temperatures in the range 623-823 K. These experiments confirmed the role of key experimental parameters such as ion energy, substrate temperature during deposition, and the surface treatment prior to deposition. It was found that a high temperature in situ anneal (1350-1450 K) gave the best results for epitaxial nucleation, whereas low energy (20-40 eV) Cl + ion bombardment resulted in amorphous film growth. The deposition energy for good epitaxial growth indicates that it is necessary to provide enough energy to induce local mobility but not to cause atomic displacements leading to the buildup of stable defects, e.g. divacancies, below the surface layer of the growing film. (orig.)

Radiative Auger effect in ion-atom collisions

International Nuclear Information System (INIS)

Richard, P.; Oltjen, J.; Jamison, K.A.; Kauffman, R.L.; Woods, C.W.; Hall, J.M.

1975-01-01

The radiative Auger effect, RAE, is observed for Al and Si bombarded by 1-2MeV H + . This is the first observation of the RAE X-ray edge using ion excitation. The K-L 23 L 23 RAE edge energy and the relative intensity are in agreement with the previously reported electron and photon induced spectra. (Auth.)

Development and evolution of biaxial texture of rolled nickel tapes by ion beam bombardment for high Tc coated conductors

International Nuclear Information System (INIS)

Wang, S.S.; Wu, K.; Shi, K.; Liu, Q.; Han, Z.

2004-01-01

High quality YBa 2 Cu 3 O 7-x films on metallic substrates with high critical current densities well over 10 6 A/cm 2 can be prepared by the rolling assisted biaxially textured substrates (RABiTS) method. Nickel or its alloys have been used as biaxially textured substrates formed through a specific rolling and high temperature annealing procedures. In this paper, we report a newly developed process for developing biaxial texture in rolled Ni tape by argon ion beam bombardment. It is named the ion-beam structure modification (ISM) process. In the ISM processed Ni foils, X-ray diffraction ω scans showed the full width-half maximum (FWHM) value of the (2 0 0) peak was 5.7 deg. . And the electron back scattering diffraction (EBSP) analysis based on scanning electron microscopy showed good {1 0 0} cubic orientation and the mean grain size was determined as about 25 μm. The texture evolution of rolled Ni foils during ISM process is reported also. For ISM process, local temperature elevation and distribution arises from the ion bombardment, coupled with anisotropic incident ion penetration and propagation as a result of channeling effects in the metal lattice, are expected to play the major roles in the development of grain reorientation in the Ni foil. Due to the simplicity and efficiency of the ISM process, the technique shows a great promise for application in the industrial scale production of long-lengths of superconductor tapes

Influence of ion bombardment on structure and properties of TiZrN thin film

Energy Technology Data Exchange (ETDEWEB)

Lin, Yu-Wei, E-mail: james722@itrc.narl.org.tw [Instrument Technology Research Center, National Applied Research Laboratories Taiwan (China); Huang, Jia-Hong; Yu, Ge-Ping [Department of Engineering and System Science, National Tsing Hua University, Taiwan (China); Hsiao, Chien-Nan; Chen, Fong-Zhi [Instrument Technology Research Center, National Applied Research Laboratories, Taiwan (China)

2015-11-01

Highlights: • (Ti,Zr)N thin films were produced using dual guns with Ti and Zr targets. • Ti{sub 0.5}Zr{sub 0.5}N shows excellent hardness of 37.8 GPa with exhibiting (1 1 1) preferred orientation. • Resistivity is inverse proportional to the packing density. • Hardness is proportional to the packing density. - Abstract: The study is focused on the characterization of TiZrN thin film by controlling the behavior of ion bombardment. Thin films are grown using radio frequency magnetron sputtering process on Si wafer. The negative bias voltage ranging from −20 V to −130 V was applied to the substrate. The ion current density increases rapidly as substrate bias is lower than −60 V, then slightly increases as the critical value about −60 V is exceeded. At the substrate bias of −60 V, the ion current density is close to 0.56 mA/cm{sup 2}. The resistivity measured by four-point probe decreases from conditions −20 V to −60 V and then increases for substrate bias increases from −60 V to −130 V. The resistivity of TiZrN films is contributed from the packing factor. The N/TiZr ratios about 1 were measured by Rutherford backscattering spectrometer, and the packing factors of TiZrN films can also be obtained by the results of RBS. Field Emission scanning electron microscope (FEG-SEM) is used to characterize the thickness and structure of the deposited TiZrN film. X-ray diffraction (XRD) is used to determine the preferred orientation and lattice parameter. The precursor results of XRD show that all the coating samples exhibited (1 1 1) preferred orientation, and the hardness values of TiZrN films were ranging from 20 to 40 GPa. To sum up the precursor studies, the TiZrN films which can improve the properties from TiN and ZrN is a new ceramic material with higher potential. Following the advance process and analysis research, the structure and properties can be correlated and as a reference for industry application.

Implantation of P ions in SiO2 layers with embedded Si nanocrystals

International Nuclear Information System (INIS)

Kachurin, G.A.; Cherkova, S.G.; Volodin, V.A.; Kesler, V.G.; Gutakovsky, A.K.; Cherkov, A.G.; Bublikov, A.V.; Tetelbaum, D.I.

2004-01-01

The effect of 10 13 -10 16 cm -2 P ions implantation and of subsequent annealing on Si nanocrystals (Si-ncs), formed preliminarily in SiO 2 layers by the ion-beam synthesis, has been studied. Photoluminescence (PL), Raman spectroscopy, high resolution electron microscopy (HREM), X-Ray Photoelectron Spectroscopy (XPS) and optical absorption were used for characterizations. The low fluence implantations have shown even individual displacements in Si-ncs quench their PL. Restoration of PL from partly damaged Si-ncs proceeds at annealing less than 1000 deg. C. In the low fluence implanted and annealed samples an increased Si-ncs PL has been found and ascribed to the radiation-induced shock crystallization of stressed Si nanoprecipitates. Annealing at temperatures under 1000 deg. C are inefficient when P ion fluences exceed 10 14 cm -2 , thus becoming capable to amorphize Si-ncs. High crystallization temperature of the amorphized Si-ncs is attributed to a counteraction of their shell layers. After implantation of the highest P fluences an enhanced recovery of PL was found from P concentration over 0.1 at.%. Raman spectroscopy and HREM showed an increased Si-ncs number in such layers. The effect resembles the impurity-enhanced crystallization, known for heavily doped bulk Si. This effect, along with the data obtained by XPS, is considered as an indication P atoms are really present inside the Si-ncs. However, no evidence of free electrons appearance has been observed. The fact is explained by an increased interaction of electrons with the donor nuclei in Si-ncs

Effects of dual-ion irradiation on the swelling of SiC/SiC composites

International Nuclear Information System (INIS)

Kishimoto, Hirotatsu; Kohyama, Akira; Ozawa, Kazumi; Kondo, Sosuke

2005-01-01

Silicon carbide (SiC) matrix composites reinforced by SiC fibers is a candidate structural material of fusion gas-cooled blanket system. From the viewpoint of material designs, it is important to investigate the swelling by irradiation, which results from the accumulation of displacement damages. In the fusion environment, (n, α) nuclear reactions are considered to produce helium gas in SiC. For the microstructural evolution, a dual-ion irradiation method is able to simulate the effects of helium. In the present research, 1.7 MeV tandem and 1 MeV single-end accelerators were used for Si self-ion irradiation and helium implantation, respectively. The average helium over displacement per atom (dpa) ratio in SiC was adjusted to 60 appm/dpa. The irradiation temperature ranged from room temperature to 1400degC. The irradiation-induced swelling was measured by the step height method. Helium that was implanted simultaneously with displacement damages in dual-ion irradiated SiC increased the swelling that was larger than that by single-ion irradiated SiC below 800degC. Since this increase was not observed above 1000degC, the interaction of helium and displacement damages was considered to change above 800degC. In this paper, the microstructural behavior and dimensional stability of SiC materials under the fusion relevant environment are discussed. (author)

Anomalous behavior in temporal evolution of ripple wavelength under medium energy Ar{sup +}-ion bombardment on Si: A case of initial wavelength selection

Energy Technology Data Exchange (ETDEWEB)

Garg, Sandeep Kumar [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005 (India); Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Cuerno, Rodolfo [Departamento de Matematicas and Grupo Interdisciplinar de Sistemas Complejos (GISC), Universidad Carlos III de Madrid, 28911 Leganes (Spain); Kanjilal, Dinakar [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Som, Tapobrata, E-mail: tsom@iopb.res.in [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005 (India)

2016-06-14

We have studied the early stage dynamics of ripple patterns on Si surfaces, in the fluence range of 1–3 × 10{sup 18} ions cm{sup −2}, as induced by medium energy Ar{sup +}-ion irradiation at room temperature. Under our experimental conditions, the ripple evolution is found to be in the linear regime, while a clear decreasing trend in the ripple wavelength is observed up to a certain time (fluence). Numerical simulations of a continuum model of ion-sputtered surfaces suggest that this anomalous behavior is due to the relaxation of the surface features of the experimental pristine surface during the initial stage of pattern formation. The observation of this hitherto unobserved behavior of the ripple wavelength seems to have been enabled by the use of medium energy ions, where the ripple wavelengths are found to be order(s) of magnitude larger than those at lower ion energies.

Light-emitting Si nanostructures formed by swift heavy ions in stoichiometric SiO2 layers

International Nuclear Information System (INIS)

Kachurin, G.A.; Cherkova, S.G.; Marin, D.V.; Kesler, V.G.; Volodin, V.A.; Skuratov, V.A.

2012-01-01

Three hundred and twenty nanometer-thick SiO 2 layers were thermally grown on the Si substrates. The layers were irradiated with 167 MeV Xe ions to the fluences ranging between 10 12 cm −2 and 10 14 cm −2 , or with 700 MeV Bi ions in the fluence range of 3 × 10 12 –1 × 10 13 cm −2 . After irradiation the yellow–orange photoluminescence (PL) band appeared and grew with the ion fluences. In parallel optical absorption in the region of 950–1150 cm −1 , Raman scattering and X-ray photoelectron spectroscopy evidenced a decrease in the number of Si–O bonds and an increase in the number of Si-coordinated atoms. The results obtained are interpreted as the formation of the light-emitting Si-enriched nanostructures inside the tracks of swift heavy ions through the disproportionation of SiO 2 . Ionization losses of the ions are regarded as responsible for the processes observed. Difference between the dependences of the PL intensity on the fluences of Xe and Bi ions are ascribed to their different stopping energy, therewith the diameters of the tracks of Xe and Bi ions were assessed as <3 nm and ∼10 nm, respectively. The observed shift of the PL bands, induced by Xe and Bi ions, agrees with the predictions of the quantum confinement theory.

Analysis of intensities of positive and negative ion species from silicon dioxide films using time-of-flight secondary ion mass spectrometry and electronegativity of fragments

International Nuclear Information System (INIS)

Chiba, Kiyoshi

2010-01-01

Intensities of positive and negative ion species emitted from thermally oxidized and plasma-enhanced chemical vapor deposited (PECVD) SiO 2 films were analyzed using time-of-flight secondary ion mass spectrometry (TOF-SIMS) and the Saha-Boltzmann equation. Intensities of positive and negative secondary ion species were normalized to those of 28 Si + and 28 Si - ions, respectively, and an effective temperature of approximately (7.2 ± 0.1) x 10 3 K of the sputtered region bombarded with pulsed 22 kV Au 3 + primary ions was determined. Intensity spectra showed polarity dependence on both n and m values of Si n O m fragments, and a slight shift to negative polarity for PECVD SiO 2 compared to thermally oxidized SiO 2 films. By dividing the intensity ratios of negative-to-positive ions for PECVD SiO 2 by those for thermally oxidized SiO 2 films to cancel statistical factors, the difference in absolute electronegativity (half the sum of ionization potential and electron affinity of fragments) between both films was obtained. An increase in electronegativity for SiO m (m = 1, 2) and Si 2 O m (m = 1-4) fragments for PECVD SiO 2 films compared to thermally oxidized films was obtained to be 0.1-0.2 Pauling units, indicating a more covalent nature of Si-O bonds for PECVD SiO 2 films compared to the thermally oxidized SiO 2 films.

Influence of helium-ion bombardment on the surface properties of pure and ammonia-adsorbed water thin films

International Nuclear Information System (INIS)

Kondo, M.; Shibata, T.; Kawanowa, H.; Gotoh, Y.; Souda, R.

2005-01-01

The influence of the ion bombardment on the surface properties of water-ice films has been investigated. The films are irradiated with 1.5 keV He + ions and analyzed sequentially on the basis of time-of-flight secondary-ion mass spectrometry (TOF-SIMS). In order to minimize any temperature-induced effects, the measurements were made at 15 K. The damage of the films, as estimated from the H/D exchange between NH 3 and the D 2 O ice and the intermixing of NH 3 with the H 2 18 O ice, is recognized at the fluence above 2 x 10 14 ions/cm 2 . The sputtering yield of the D 2 O ice is determined as 0.9 ± 0.2 molecules per incoming He + ion. The temperature-programmed TOF-SIMS analysis of the water-ice films has been completed within the fluence of 5.8 x 10 12 ions/cm 2 , so that no appreciable damage of the film should be induced during the measurement

Push-and-stick mechanism for charged and excited small cluster emission under ion bombardment

International Nuclear Information System (INIS)

Bitensky, I.S.; Parilis, E.S.; Wojciechowski, I.A.

1992-01-01

The mechanism for the formation, excitation and ionization of small clusters emitted under ion bombardment is discussed. It is shown that the increased degree of ionization for the transition metal dimers, trimers and tetramers can be explained by the existence of an additional effective channel for their formation, namely the associative ionization process. A simple estimate shows that the sticking together of a fast cascade atom and the pushed out surface atom is 30-40 times more effective for dimer formation, than the recombination of two fast atoms. This push-and-stick mechanism of cluster formation could also be effective for the formation of trimers and tetramers. (orig.)

Charge-state correlated cross sections for the production of low-velocity highly charged Ne ions by heavy-ion bombardment

International Nuclear Information System (INIS)

Gray, T.J.; Cocke, C.L.; Justiniano, E.

1980-01-01

We report measured cross sections for the collisional production of highly charged low-velocity Ne recoil ions resulting from the bombardment of a thin Ne gas target by highly charged 1-MeV/amu C, N, O, and F projectiles. The measurements were made using time-of-flight techniques which allowed the simultaneous identification of the final charge state of both the low-velocity recoil ion and the high-velocity projectile for each collision event. For a given incident-projectile charge state, the recoil charge-state distribution is very dependent upon the final charge state of the projectile. Single- and double-electron capture events by incident bare nuclei and projectile K-shell ionization during the collision cause large shifts in the recoil charge-state distributions toward higher charge states. A previously proposed energy-deposition model is modified to include the effects of projectile charge-changing collisions during the collision for bare and hydrogenlike projectiles and is used to discuss the present experimental results

Heavy Ion Current Transients in SiGe HBTs

Science.gov (United States)

Pellish, Jonathan A.; Reed, Robert A.; Vizkelethy, Gyorgy; McMorrow, Dale; Ferlet-Cavrois, Veronique; Baggio, Jacques; Paillet, Philipe; Duhanel, Olivier; Phillips, Stanley D.; Sutton, Akil K.;

Study on the desorption yield for natural botanic sample induced by energetic heavy ions

CERN Document Server

Xue, J M; Du, G H; Yan, S; Zhao, W J

2002-01-01

The dependence of desorption yield for the natural botanic sample bombarded with heavy ion on the electronic stopping power (S sub e) and dose has been measured by weighing sample mass before and after irradiation. Primary ions including 50 keV N sup + , 1.5 MeV F sup + , 3.0 MeV F sup 2 sup + , 4.0 MeV F sup 2 sup + and 3.0 MeV Si sup 2 sup + were used in the experiment. Three megaelectron volts of F sup 2 sup + with doses ranging from 4x10 sup 1 sup 5 to 4x10 sup 1 sup 6 ions/cm sup 2 were used in order to investigate the influence of ion dose. A mass spectrum from the sample bombarded with 3 MeV Si sup 2 sup + was also taken for a better understanding of the desorption process. Results show that the natural botanic sample is very easily to be desorpted. The yield of MeV heavy ions can be as high as thousands CH sub 2 O/ion, and significantly depends on both the S sub e and dose. The measured yields increase quickly with S sub e , but drop down with increasing ion dose. These results fit roughly with the pr...

Use of positive ion fast atom bombardment mass spectrometry for rapid identification of a bile alcohol glucuronide isolated from cerebrotendinous xanthomatosis patients

International Nuclear Information System (INIS)

Dayal, B.; Salen, G.; Tint, G.S.; Shefer, S.; Benz, S.W.

1990-01-01

The identification of a major biliary and plasma bile alcohol glucuronide, 5 beta-cholestane-3 alpha, 7 alpha, 12 alpha, 25-tetrol-3-0-beta-D-glucuronide, present in cerebrotendinous xanthomatosis (CTX) patients, was investigated by positive ion fast atom bombardment mass spectrometry (FAB-MS). The spectrum was characterized by abundant ions formed by attachment of a proton, [M + H]+, or of alkali ions, [M + Na]+ and [M + 39K]+, to the glucuronide salt. These ions allowed an unambiguous deduction of the molecular weight of the sample. It is suggested that FAB-MS could be used in the rapid diagnosis of CTX

Light-emitting Si nanostructures formed by swift heavy ions in stoichiometric SiO{sub 2} layers

Energy Technology Data Exchange (ETDEWEB)

Kachurin, G.A., E-mail: kachurin@isp.nsc.ru [A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk (Russian Federation); Cherkova, S.G. [A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk (Russian Federation); Marin, D.V. [A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk (Russian Federation); Novosibirsk State University, 630090 Novosibirsk (Russian Federation); Kesler, V.G. [A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk (Russian Federation); Volodin, V.A. [A.V. Rzhanov Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk (Russian Federation); Novosibirsk State University, 630090 Novosibirsk (Russian Federation); Skuratov, V.A. [Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation)

2012-07-01

Three hundred and twenty nanometer-thick SiO{sub 2} layers were thermally grown on the Si substrates. The layers were irradiated with 167 MeV Xe ions to the fluences ranging between 10{sup 12} cm{sup -2} and 10{sup 14} cm{sup -2}, or with 700 MeV Bi ions in the fluence range of 3 Multiplication-Sign 10{sup 12}-1 Multiplication-Sign 10{sup 13} cm{sup -2}. After irradiation the yellow-orange photoluminescence (PL) band appeared and grew with the ion fluences. In parallel optical absorption in the region of 950-1150 cm{sup -1}, Raman scattering and X-ray photoelectron spectroscopy evidenced a decrease in the number of Si-O bonds and an increase in the number of Si-coordinated atoms. The results obtained are interpreted as the formation of the light-emitting Si-enriched nanostructures inside the tracks of swift heavy ions through the disproportionation of SiO{sub 2}. Ionization losses of the ions are regarded as responsible for the processes observed. Difference between the dependences of the PL intensity on the fluences of Xe and Bi ions are ascribed to their different stopping energy, therewith the diameters of the tracks of Xe and Bi ions were assessed as <3 nm and {approx}10 nm, respectively. The observed shift of the PL bands, induced by Xe and Bi ions, agrees with the predictions of the quantum confinement theory.

Photon emission produced by Kr+ ions bombardment of Cr and Cr2O3 targets

International Nuclear Information System (INIS)

Boujlaidi, A. El; Hammoum, K.; Jadoual, L.; Jourdani, R.; Ait El Fqih, M.; Aouchiche, H.; Kaddouri, A.

2015-01-01

The sputter induced photon spectroscopy technique was used to study the luminescence spectra of the species sputtered from chromium powder and its oxide Cr 2 O 3 , during 5 keV Kr + ions bombardment in vacuum better than 10 −7 torr. The optical spectra recorded between 350 and 470 nm exhibit discrete lines which are attributed to neutral excited atoms of chromium (Cr I lines). The experiments are also performed under 10 −5 torr ultra pure oxygen partial pressure. The results demonstrate that the measured intensities of the emitted photons are always higher in the presence of oxygen and even higher than those obtained for Cr 2 O 3 target. In the presence of oxygen vapor we assume that an oxide film is formed on the chromium surface which is responsible of the increase of photon emission. This variation in the intensities is correctly explained in the model of electron transfer processes between the excited sputtered atom and the bombarded surface. This model suggests that the structure formed on the Cr surface in the case of oxygenated chromium is closer to that of Cr 2 O 3 oxide

Diamond-like carbon prepared by pulsed laser deposition with ion bombardment: physical properties

Science.gov (United States)

Písařík, P.; Mikšovský, J.; Remsa, J.; Zemek, J.; Tolde, Z.; Jelínek, M.

2018-01-01

Diamond-like carbon (DLC) and titanium-doped DLC thin films were prepared by unique hybrid system consisting of pulsed laser deposition, ion source (bombardment) and magnetron sputtering. The influence of deposition parameters (ion energies, deposition pressures and magnetron power) on composition and physical properties was studied. Composition and sp 3/ sp 2 ratio were determined by XPS. sp 3/ sp 2 ratio was in the range from 1.4 to 2.2 for undoped DLC and from 3.4 to 4.8 for Ti-DLC. AFM showed that the layers were smooth, but with small amounts of random droplets. The measurements of the contact angle and determination of surface free energy were made for water, diiodomethane and ethylene glycol. Hardness and reduced Young's modulus varied from 20 to 31 GPa and from 182 to 276 GPa, respectively. Film adhesion was determined by scratch test; L C3 reached 23 N for DLC and 27 N for TiDLC. Optimization of sp 3/ sp 2 ratio, hardness and adhesion to biomedical alloys will advance the DLC coatings usability in the field of implantology.

Ion-beam bombardment induced texture in nickel substrates for coated high-Tc superconductors

International Nuclear Information System (INIS)

Wang, S S; Wu, K; Zhou, Y; Godfrey, A; Meng, J; Liu, M L; Liu, Q; Liu, W; Han, Z

2003-01-01

Biaxially textured metal substrates are often used for making YBa 2 Cu 3 O 7-x coated conductors with high critical current density. Generally, specific rolling and high-temperature annealing procedures are required to obtain the biaxial texture for metal substrates. Here, we report on a new method for developing strongly biaxially textured grain structure in rolled nickel tape by argon ion-beam bombardment. X-ray diffraction (XRD) θ-2θ scans have shown that a (200) diffraction peak intensity of the Ni foil processed by ion-beam structure modification (ISM) is two orders of magnitude greater than that of cold-rolled foil, while the (111) and (220) intensities are very weak. In the ISM processed Ni foils, from the rocking curve, the full width at half maximum (FWHM) value of the (200) peak has been found to be less than 5.9 deg., whilst the in-plane FWHM obtained from a pole figure analysis is just 8 deg. We discuss the possible mechanisms leading to the texture changes during ISM. (rapid communication)

Study and realisation of an ion source obtained by electronic bombardment - experimentation with phosphorus

International Nuclear Information System (INIS)

Schneider, Philippe

1979-01-01

This research thesis reports the study and development of an ion source by electronic bombardment. In order to solve some practical difficulties (cathode destruction, source instability, and so on), the design of each component has been very careful, notably for the electron gun. The author first briefly discusses the exiting ionisation processes, gives a list of ion which can be produced, with a focus on phosphorus for which the ionisation cross section is defined and assessed. After an assessment of different ionisation processes, and an indication of performance of the best existing sources, the author explains the choice for a totally different process. In the second part, he describes the experimental device, and particularly the electron gun as its design has been an important part of this research work. The source operation is described and its characteristics and performance are studied. Finally, the author outlines that some improvements are still possible to obtain a totally exploitable source [fr

Erosion of volatile elemental condensed gases by keV electron and light-ion bombardment

International Nuclear Information System (INIS)

Schou, J.

1991-11-01

Erosion of the most volatile elemental gases by keV electron and light-ion bombardment has been studied at the experimental setup at Risoe. The present work includes frozen neon, argon, krypton, nitrogen, oxygen and three hydrogen isotopes, deuterium, hydrogen deuteride and hydrogen. The yield of these condensed gases has been measured as a function of film thickness and primary energy for almost all combinations of primary particles (1-3 keV electrons, 5-10 keV hydrogen- and helium ions) and ices. These and other existing results show that there are substantial common features for the sputtering of frozen elemental gases. Within the two groups, the solid rare gases and the solid molecular gases, the similarity is striking. The hydrogenic solids deviate in some respects from the other elements. The processes that liberate kinetic energy for the particle ejection in sputtering are characteristic of the specific gas. (au) 3 tabs., 12 ills., 159 refs

Influence of both ion bombardment and chemical treatment processes on the electrical conductivity of PVC/poly aniline composites

International Nuclear Information System (INIS)

Gad, E.A.M.; Ashour, A.H.; Abdel-Hamid, H.M.; Sayed, W.M.

1999-01-01

In this article the changes in the electrical conductivity of PVC/poly aniline composites, as temperature consecutively increases, have been measured. The measurement were taken with correspondence to a control series of the composites under two processes:A. Composite samples bombarded with Ar + ions with fluence 2.44 x 10 13 beam ions /cm 2 ., sec 4 of 4 ke V beam energy where argon atoms can induce defects in the surface layer take place. Composite samples treated chemically with concentrated H 2 SO 4 as dopant which reacts with nitrogen atom in aniline. The measurements were also, done with the composites as the ratio of poly(aniline) stepped upward

Effects of sintering additives on the microstructural and mechanical properties of the ion-irradiated SiCf/SiC

Science.gov (United States)

Fitriani, Pipit; Sharma, Amit Siddharth; Yoon, Dang-Hyok

2018-05-01

SiCf/SiC composites containing three different types of sintering additives viz. Sc-nitrate, Al2O3-Sc2O3, and Al2O3-Y2O3, were subjected to ion irradiation using 0.2 MeV H+ ions with a fluence of 3 × 1020 ions/m2 at room temperature. Although all composites showed volumetric swelling upon ion irradiation, SiCf/SiC with Sc-nitrate showed the smallest change followed by those with the Al2O3-Sc2O3 and Al2O3-Y2O3 additives. In particular, SiCf/SiC containing the conventional Al2O3-Y2O3 additive revealed significant microstructural changes, such as surface roughening and the formation of cracks and voids, resulting in reduced fiber pullout upon irradiation. On the other hand, the SiCf/SiC with Sc-nitrate showed the highest resistance against ion irradiation without showing any macroscopic changes in surface morphology and mechanical strength, indicating the importance of the sintering additive in NITE-based SiCf/SiC for nuclear structural applications.

Effect of hydrogen ion beam treatment on Si nanocrystal/SiO_2 superlattice-based memory devices

International Nuclear Information System (INIS)

Fu, Sheng-Wen; Chen, Hui-Ju; Wu, Hsuan-Ta; Chuang, Bing-Ru; Shih, Chuan-Feng

2016-01-01

Graphical abstract: - Highlights: • Memory window and retention properties are improved employing HIBAS technique. • The O/Si ratio and radiative recombination are changed by HIBAS. • Memory properties are affected not only by Si NCs and O/Si ratio but also the RDCs. • The mechanism of hydrogen ion beam alters the memory properties is investigated. - Abstract: This study presents a novel route for synthesizing silicon-rich oxide (SRO)/SiO_2 superlattice-based memory devices with an improved memory window and retention properties. The SiO_2 and SRO superlattices are deposited by reactive sputtering. Specifically, the hydrogen ion beam is used to irradiate the SRO layer immediately after its deposition in the vacuum chamber. The use of the hydrogen ion beam was determined to increase oxygen content and the density of the Si nanocrystals. The memory window increased from 16 to 25.6 V, and the leakage current decreased significantly by two orders, to under ±20 V, for the hydrogen ion beam-prepared devices. This study investigates the mechanism into how hydrogen ion beam treatment alters SRO films and influences memory properties.

Implantation of P ions in SiO{sub 2} layers with embedded Si nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Kachurin, G.A. E-mail: kachurin@isp.nsc.ru; Cherkova, S.G.; Volodin, V.A.; Kesler, V.G.; Gutakovsky, A.K.; Cherkov, A.G.; Bublikov, A.V.; Tetelbaum, D.I

2004-08-01

The effect of 10{sup 13}-10{sup 16} cm{sup -2} P ions implantation and of subsequent annealing on Si nanocrystals (Si-ncs), formed preliminarily in SiO{sub 2} layers by the ion-beam synthesis, has been studied. Photoluminescence (PL), Raman spectroscopy, high resolution electron microscopy (HREM), X-Ray Photoelectron Spectroscopy (XPS) and optical absorption were used for characterizations. The low fluence implantations have shown even individual displacements in Si-ncs quench their PL. Restoration of PL from partly damaged Si-ncs proceeds at annealing less than 1000 deg. C. In the low fluence implanted and annealed samples an increased Si-ncs PL has been found and ascribed to the radiation-induced shock crystallization of stressed Si nanoprecipitates. Annealing at temperatures under 1000 deg. C are inefficient when P ion fluences exceed 10{sup 14} cm{sup -2}, thus becoming capable to amorphize Si-ncs. High crystallization temperature of the amorphized Si-ncs is attributed to a counteraction of their shell layers. After implantation of the highest P fluences an enhanced recovery of PL was found from P concentration over 0.1 at.%. Raman spectroscopy and HREM showed an increased Si-ncs number in such layers. The effect resembles the impurity-enhanced crystallization, known for heavily doped bulk Si. This effect, along with the data obtained by XPS, is considered as an indication P atoms are really present inside the Si-ncs. However, no evidence of free electrons appearance has been observed. The fact is explained by an increased interaction of electrons with the donor nuclei in Si-ncs.

Entrance channel excitations in the 28Si + 28Si reaction

International Nuclear Information System (INIS)

Decowski, P.; Gierlik, E.; Box, P.F.; Kamermans, R.; Nieuwenhuizen, G.J. van; Meijer, R.J.; Griffioen, K.A.; Wilschut, H.W.; Giorni, A.; Morand, C.; Demeyer, A.; Guinet, D.

1991-01-01

Velocity spectra of heavy ions produced in the 28 Si + 28 Si reaction at bombarding energies of 19.7 and 30 MeV/nucleon were measured and interpreted within the Q-optimum model extended by the inclusion of particle evaporation from excited fragments. Regions of forward angle spectra corresponding to the mutual excitation of the reaction partners with net mass transfer zero projected onto the Q-value variable show an enhancement at Q-values of -60 - -80 MeV (excitation energies of the reaction partners equal to 30 - 40 MeV). This energy range coincides with the region of 2ℎω - 3ℎω excitations characteristic for giant osciallations. This selective excitation, which occurs at a very early stage of the reaction (the cross section is the largest at very forward angles), provides an important doorway to other dissipative processes

Hydrogen pumping and release by graphite under high flux plasma bombardment

International Nuclear Information System (INIS)

Hirooka, Y.; Leung, W.K.; Conn, R.W.; Goebel, D.M.; Labombard, B.; Nygren, R.; Wilson, K.L.

1988-01-01

Inert gas (helium or argon) plasma bombardment has been found to increase the surface gas adsorptivity of isotropic graphite (POCO-graphite), which can then getter residual gases in a high vacuum system. The inert gas plasma bombardment was carried out at a flux ∼ 1 x 10 18 ions s -1 cm -2 to a fluence of the order of 10 21 ions/cm 2 and at temperatures around 800 degree C. The plasma bombarding energy was varied between 100 and 200 eV. The gettering speed of the activated graphite surface is estimated to be as large as 25 liters s -1 cm -2 at total pressures between 10 -6 and 10 -7 torr. The gettering capacity estimated is 0.025 torr-liter/cm 2 at room temperature. The gettering capability of graphite can be easily recovered by repeating inert gas plasma bombardment. The activated graphite surface exhibits a smooth, sponge-like morphology with significantly increased pore openings, which correlates with the observed increase in the surface gas adsorptivity. The activated graphite surface has been observed to pump hydrogen plasma particles as well. From calibrated H-alpha measurements, the dynamic hydrogen retention capacity is evaluated to be as large as 2 x 10 18 H/cm 2 at temperatures below 100 degree C and at a plasma bombarding energy of 300 eV

Preparation, properties, and application characteristics of metastable layers of the Ti-Si-C-N system

International Nuclear Information System (INIS)

Fella, R.

1992-10-01

In the Ti-Si-C and Ti-Si-C-N systems, metastable layers were precipitated by means of non-reactive magnetron sputtering of hot-pressed two-phase TiC/SiC and TiN/SiC targets with 20 mole% and 50 mole% SiC. The preparation parameters were varied as follows: ion bombardment during precipitation (bias sputtering), substrate temperature, and annealing times when annealing amorphous 50%:50% TiC/SiC and 50%:50% TiN/SiC layers. Sputtering of targets containing 20% SiC was found to result in monophase fcc layers (NaCl structure). This was documented on the basis of X-ray and electron diffraction patterns. Direct precipitation of targets with 50 mole% SiC resulted in amorphous layers. Increasing the ion bombardment during accretion, raising the substrate temperature, and annealing amorphous 50%:50% TiC/SiC and 50%:50% TiN/SiC (layers precipitated directly) resulted in the crystallization of TiC and TiN nanocrystallites, respectively, imbedded in an amorphous SiC matrix. These crystallites were detected both by X-ray and by electron diffractions and by XPS studies. The XPS measurements of crystalline TiC and amorphous SiC reference layers demonstrated the existence of new kinds of carbon interface phases ('pseudocarbide layers') around TiC and amorphous SiC regions, respectively, which have a positive impact on the mechanical properties of the layers. The hardness of the layers can be correlated with the degrees of crystallization and texture. Adhesion and toughness are worse in SiC-bearing layers than PVD TiC and TiN layers, respectively. The application characteristics of the layers were determined by model wear tests relative to 100Cr6 by means of a pin/disk tribometer. N-bearing layers were found to have clearly higher friction coefficients and greater wear than layers without N. (orig.)

Underling modification in ion beam induced Si wafers

International Nuclear Information System (INIS)

Hazra, S.; Chini, T.K.; Sanyal, M.K.; Grenzer, J.; Pietsch, U.

2005-01-01

Subsurface (amorphous-crystalline interface) structure of keV ion beam modified Si(001) wafers was studied for the first time using non-destructive technique and compared with that of the top one. Ion-beam modifications of the Si samples were done using state-of-art high-current ion implanter facility at Saha Institute of Nuclear Physics by changing energy, dose and angle of incidence of the Ar + ion beam. To bring out the underlying modification depth-resolved x-ray grazing incidence diffraction has been carried out using synchrotron radiation facility, while the structure of the top surface was studied through atomic force microscopy

Self-organization of nanocluster δ-layers at ion-beam-mixed Si-SiO2 interfaces

International Nuclear Information System (INIS)

Roentzsch, L.

2003-11-01

This diploma thesis presents experimental evidence of a theoretical concept which predicts the self-organization of δ-layers of silicon nanoclusters in the buried oxide of a MOS-like structure. This approach of ''bottom-up'' structuring might be of eminent importance in view of future semiconductor memory devices. Unconventionally, a 15 nm thin SiO 2 layer, which is enclosed by a 50 nm poly-Si capping layer and the Si substrate, is irradiated with Si + ions. Ion impact drives the system to a state far from thermodynamic equilibrium, i.e. the local composition of the target is modified to a degree unattainable in common processes. A region of SiO x (x 2 matrix at a distance of ∼3 nm from the Si substrate. The physical mechanisms of ion mixing of the two Si-SiO 2 interfaces and subsequent phase separation, which result in the desired sample structure, are elucidated from the viewpoint of computer simulations. In addition, experimental evidence is presented based on various methods, including TEM, RBS, and SIMS. A novel method of Si nanocluster decoration is of particular importance which applies Ge as contrast enhancing element in TEM studies of tiny Si nanoclusters. (orig.)

Si nanoparticle-decorated Si nanowire networks for Li-ion battery anodes

KAUST Repository

Hu, Liangbing

2011-01-01

We designed and fabricated binder-free, 3D porous silicon nanostructures for Li-ion battery anodes, where Si nanoparticles electrically contact current collectors via vertically grown silicon nanowires. When compared with a Si nanowire anode, the areal capacity was increased by a factor of 4 without having to use long, high temperature steps under vacuum that vapour-liquid-solid Si nanowire growth entails. © 2011 The Royal Society of Chemistry.

Multiple ionization produced in Yb due to N-,Si- and Ti-ion impact

International Nuclear Information System (INIS)

Verma, P.

2000-01-01

Heavy ion induced inner shell ionization produces multiple vacancies in the outer shells (M, N etc.) simultaneous to vacancies in the inner-shells (viz. L-shell), which in turn create a very complicated electronic configuration. Three projectiles N 2+,3+ , Si 7+,8+ and Ti 10+,11+ ion beams having a range of 0.3 to 3.5 MeV/u were bombarded on a thin rare earth target of Yb. The recorded L X-ray spectra of Yb have been analyzed in the light of multiple ionization produced due to the heavy ion impact. The outer-shell vacancies acting as spectator vacancies cause a shift in the energy of the various L X-ray diagram lines. A comparison of the shifts in the energies of the various L X-ray transitions of Yb due to the impact of these projectiles, from standard values and that due to proton impact along with the deviation of the intensity ratios from single hole branching ratios, reveal a dependence of multiple ionization on the projectile atomic number (Z) and energy. A further comparison of the degree of multiple ionization produced in Yb, evident by the number of spectator vacancies produced due to the impact of projectiles with 7≤Z≤22 and overlapping MeV/u range lead to explicit conclusions regarding the probability of multiple vacancy production in outer shells simultaneous to a single L-shell vacancy for such projectile target combinations. (orig.)

Quantification of steroid conjugates using fast atom bombardment mass spectrometry

International Nuclear Information System (INIS)

Gaskell, S.J.

1990-01-01

Fast atom bombardment/mass spectrometry or liquid secondary ion mass spectrometry provides the capability for direct analysis of steroid conjugates (sulfates, glucuronides) without prior hydrolysis or derivatization. During the analysis of biologic extracts, limitations on the sensitivity of detection arise from the presence of co-extracted material which may suppress or obscure the analyte signal. A procedure is described for the quantitative determination of dehydroepiandrosterone sulfate in serum which achieved selective isolation of the analyte using immunoadsorption extraction and highly specific detection using tandem mass spectrometry. A stable isotope-labeled analog [( 2H2]dehydroepiandrosterone sulfate) was used as internal standard. Fast atom bombardment of dehydroepiandrosterone sulfate yielded abundant [M-H]- ions that fragmented following collisional activation to give HSO4-; m/z 97. During fast atom bombardment/tandem mass spectrometry of serum extracts, a scan of precursor ions fragmenting to give m/z 97 detected dehydroepiandrosterone sulfate and the [2H2]-labeled analog with a selectivity markedly superior to that observed using conventional mass spectrometry detection. Satisfactory agreement was observed between quantitative data obtained in this way and data obtained by gas chromatography/mass spectrometry of the heptafluorobutyrates of dehydroepiandrosterone sulfate and [2H2]dehydroepiandrosterone sulfate obtained by direct derivatization. 21 refs

Neutralized ion beam modification of cellulose membranes for study of ion charge effect on ion-beam-induced DNA transfer

Science.gov (United States)

Prakrajang, K.; Sangwijit, K.; Anuntalabhochai, S.; Wanichapichart, P.; Yu, L. D.

2012-02-01

Low-energy ion beam biotechnology (IBBT) has recently been rapidly developed worldwide. Ion-beam-induced DNA transfer is one of the important applications of IBBT. However, mechanisms involved in this application are not yet well understood. In this study plasma-neutralized ion beam was applied to investigate ion charge effect on induction of DNA transfer. Argon ion beam at 7.5 keV was neutralized by RF-driven plasma in the beam path and then bombarded cellulose membranes which were used as the mimetic plant cell envelope. Electrical properties such as impedance and capacitance of the membranes were measured after the bombardment. An in vitro experiment on plasmid DNA transfer through the cellulose membrane was followed up. The results showed that the ion charge input played an important role in the impedance and capacitance changes which would affect DNA transfer. Generally speaking, neutral particle beam bombardment of biologic cells was more effective in inducing DNA transfer than charged ion beam bombardment.

Study of clean and ion bombardment damaged silver single crystal surfaces by work function measurements

International Nuclear Information System (INIS)

Chelvayohan, N.

1982-06-01

Work function values of the (110), (100) and (111) faces of silver single crystal were measured by the photoelectric emission method and found to be 4.14 +- 0.04 eV, 4.22 +-0.04 eV and 4.46 +- 0.02 eV respectively. Oxygen adsorption on the faces were studied by surface potential measurement. Strong oxygen adsorption was observed on (110) and (100) faces, whereas the (111) face was found to be inert for oxygen adsorption. Oxygen adsorption on the (111) face damaged by argon ion bombardment was also investigated. The above results were compared with those of early reported work function and oxygen adsorption values. (U.K.)

Recovery of 201Tl by ion exchange chromatography from proton bombarded thallium cyclotron targets

International Nuclear Information System (INIS)

Walt, T.N. van der; Naidoo, C.

2000-01-01

A method based on ion exchange chromatography is presented for the recovery of 201 Tl and its precursor 201 Pb from proton bombarded natural thallium cyclotron targets. After bombardment the target is dissolved in diluted nitric acid. Water, hydrazine and ammonium acetate are added to the solution and the lead radioisotopes separated from the thallium by cation exchange chromatography on a Bio-Rex 70 column. The sorbed lead radioisotopes are eluted with dilute nitric acid and the separation repeated on a second Bio-Rex 70 column. After elution of the remaining thallium the column is left for 32 hours and the 201 Tl formed by decay of 201 Pb is eluted with an ammonium acetate solution. The 201 Tl eluate is acidified with a HNO 3 -HBr-Br 2 mixture and the resulting solution is passed through an AG MP-1 anion exchanger column to remove any remaining lead isotopes. The 201 Tl is eluted with a hydrazine solution, the eluate evaporated to dryness and the 201 Tl finally dissolved in an appropriate solution to produce a 201 TlCl solution suitable for medical use. A high quality 201 Tl product is obtained containing ≤ 0.1 μg of Tl/mCi (37 MBq) 201 Tl. The radionuclidic impurities are less than the maximum values specified by the US Pharmacopoeia and the British Pharmacopoeia. (orig.)

A Au82Si18 liquid metal field-ion emitter for the production of Si ions: fundamental properties and mechanisms

International Nuclear Information System (INIS)

Bischoff, L.; Mair, G.L.R.; Aidinis, C.J.; Londos, C.A.; Akhmadaliev, C.; Ganetsos, Th.

2004-01-01

Focused silicon beams are useful for direct write applications, e.g., lithography on silicon without the undesirable effect of substrate contamination. However, since pure silicon is not amenable to liquid metal ion source (LMIS) manufacture, a suitable alloy containing silicon has to be produced. This paper covers almost all fundamental aspects of a Au 82 Si 18 eutectic, including the most detailed beam mass spectra reported to date of a AuSi source. A finding worthy of note in this investigation, manifested in the behaviour of the ion extraction voltage with temperature, is the abnormal behaviour of the surface tension coefficient of the alloy with temperature. An important deduction from this work, however, concerns the mechanisms responsible for the creation of doubly charged ions: reasons of self-consistency indicate that while Si 2+ is directly field evaporated, Au 2+ must form by the post-ionization of Au + . Finally, two different mechanisms seem to co-exist, as far as the production of cluster ions is concerned. While for cluster ions containing only a few atoms some sort of surface field-ionization mechanism might be responsible for their creation, for larger clusters, a droplet break-up mechanism, possibly by ion capture, seems very likely

Optical refractive index and static permittivity of mixed Zr-Si oxide thin films prepared by ion beam induced CVD

Energy Technology Data Exchange (ETDEWEB)

Ferrer, F.J. [Centro Nacional de Aceleradores, Av. Thomas A. Edison, 7, 41092 Sevilla (Spain)], E-mail: fjferrer@us.es; Frutos, F. [E.T.S. de Ingenieria Informatica, Avda. Reina Mercedes, s/n, 41012 Sevilla (Spain); Garcia-Lopez, J. [Centro Nacional de Aceleradores, Av. Thomas A. Edison, 7, 41092 Sevilla (Spain); Gonzalez-Elipe, A.R.; Yubero, F. [Insituto de Ciencia de Materiales de Sevilla, c/ Americo vespucio, no. 49, 41092 Sevilla (Spain)

2007-12-03

Mixed oxides Zr{sub x}Si{sub 1-x}O{sub 2} (0 < x < 1) thin films have been prepared at room temperature by decomposition of (CH{sub 3}CH{sub 2}O){sub 3}SiH and Zr[OC(CH{sub 3}){sub 3}]{sub 4} volatile precursors induced by mixtures of O{sub 2}{sup +} and Ar{sup +} ions. The films were flat and amorphous independently of the Si/Zr ratio and did not present phase segregation of the pure single oxides (SiO{sub 2} and ZrO{sub 2}). A 10-23 at.% of H and 1-5 at.% of C atoms remained incorporated in the films depending on the mixture ratio of the Si and Zr precursors and the composition of the bombarding gas used during the deposition process. These impurities are mainly forming hydroxyl and carboxylic groups. Optical refractive index and static permittivity of the films were determined by reflection NIR-Vis spectroscopy and C-V electrical characterization, respectively. It is found that the refractive index increases non-linearly from 1.45 to 2.10 as the Zr content in the thin films increases. The static permittivity also increases non-linearly from {approx} 4 for pure SiO{sub 2} to {approx} 15 for pure ZrO{sub 2}. Optical and electrical characteristics of the films are justified by their impurity content and the available theories.

SIMS analyses of ultra-low-energy B ion implants in Si: Evaluation of profile shape and dose accuracy

International Nuclear Information System (INIS)

Magee, C.W.; Hockett, R.S.; Bueyueklimanli, T.H.; Abdelrehim, I.; Marino, J.W.

2007-01-01

Numerous experimental studies for near-surface analyses of B in Si have shown that the B distribution within the top few nanometers is distorted by secondary ion mass spectrometry (SIMS) depth profiling with O 2 -flooding or normal incidence O 2 bombardment. Furthermore, the presence of surface oxide affects the X j determination as well as B profile shape when SIMS analyses are conducted while fully oxidizing the analytical area. Nuclear techniques such as elastic recoil detection (ERD), nuclear reaction analysis (NRA), and high-resolution Rutherford backscattering spectrometry (HR-RBS), are known to provide a profile shape near the surface that is free of artifacts. Comparisons with SIMS analyses have shown that SIMS analyses without fully oxidizing the analytical area agree well with these techniques at sufficiently high concentrations (where the nuclear techniques are applicable). The ability to measure both the B profile and an oxide marker with this non-oxidizing SIMS technique also allows accurate positioning of the B profile with respect to the SiO 2 /Si interface. This SIMS analysis protocol has been used to study the differences in near-surface dopant distribution for plasma-based implants. This study specifically focuses on measuring near-surface profile shapes as well as total implant doses for ultra-shallow B implants in Si especially those made with high peak B concentrations

Post-annealing recrystallization and damage recovery process in Fe ion implanted Si

International Nuclear Information System (INIS)

Naito, Muneyuki; Hirata, Akihiko; Ishimaru, Manabu; Hirotsu, Yoshihiko

2007-01-01

We have investigated ion-beam-induced and thermal annealing-induced microstructures in high fluence Fe implanted Si using transmission electron microscopy. Si(1 1 1) substrates were irradiated with 120 keV Fe ions at 120 K to fluences of 0.4 x 10 17 and 4.0 x 10 17 cm -2 . A continuous amorphous layer was formed on Si substrates in both as-implanted samples. After thermal annealing at 1073 K for 2 h, β-FeSi 2 fine particles buried in a polycrystalline Si layer were observed in the low fluence sample, while a continuous β-FeSi 2 layer was formed in the high fluence sample. We discuss the relationship between ion fluence and defects recovery process in Fe ion implanted Si

Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

NARCIS (Netherlands)

Dobrovolskiy, S.; Yakshin, Andrey; Tichelaar, F.D.; Verhoeven, J.; Louis, Eric; Bijkerk, Frederik

2010-01-01

Si/SiC multilayer systems for XUV reflection optics with a periodicity of 10–20 nm were produced by sequential deposition of Si and implantation of 1 keV View the MathML source ions. Only about 3% of the implanted carbon was transferred into the SiC, with a thin, 0.5–1 nm, buried SiC layer being

MeV ion irradiation effects on the luminescence properties of Si-implanted SiO{sub 2}-thin films

Energy Technology Data Exchange (ETDEWEB)

Chulapakorn, T.; Primetzhofer, D. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Sychugov, I.; Suvanam, S.S.; Linnros, J.; Hallen, A. [Royal Institute of Technology (KTH), School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden)

2016-12-15

The effects of MeV heavy ion irradiation at varying fluence and flux on excess Si, introduced in SiO{sub 2} by keV ion implantation, are investigated by photoluminescence (PL). From the PL peak wavelength (λ) and decay lifetime (τ), two PL sources are distinguished: (i) quasi-direct recombination of excitons of Si-nanoparticles (SiNPs), appearing after thermal annealing (λ > 720 nm, τ ∝ μs), and (ii) fast-decay PL, possibly due to oxide-related defects (λ ∝ 575-690 nm, τ ∝ ns). The fast-decay PL (ii) observed before and after ion irradiation is induced by ion implantation. It is found that this fast-decay luminescence decreases for higher irradiation fluence of MeV heavy ions. After thermal annealing (forming SiNPs), the SiNP PL is reduced for samples irradiated by MeV heavy ions but found to stabilize at higher level for higher irradiation flux; the (ii) band vanishes as a result of annealing. The results are discussed in terms of the influence of electronic and nuclear stopping powers. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Effect of Ar bombardment on the electrical and optical properties of ...

Indian Academy of Sciences (India)

The influence of low-energy Ar ion beam irradiation on both electrical and optical properties of low-density polyethylene (LDPE) films is presented. The polymer films were bombarded with 320 keV Ar ions with fuences up to 1 × 10 15 cm − 2 . Electrical properties of LDPE films were measured and the effect of ion ...

Quantization of secondary ion mass spectrometry (SIMS) data using external and internal standards

International Nuclear Information System (INIS)

Gnaser, H.

1983-01-01

Some aspects of multi-dimensional characterization of solids by secondary ion mass spectrometry (SIMS) are given. A theoretical part discusses methods for the quantization of SIMS data and the most prominent effects of ion-solid interactions as related to SIMS. After a description of the instrument used for experiments (a quadrupole-equipped ion microprobe featuring a liquid metal ion source in addition to the standard duoplasmatron gas ion source) the first experimental section is devoted to the determination of practical sensitivities and relative sensitivity factors for selected pure elements, binary and treary alloys and multicomponent systems. For 23 pure elements practical sensitivities under O + 2 bombardment also have been compared to those under In + -bombardment; it was shown that on oxygen saturated surfaces yields under In + -bombardment are higher, this making feasible use of submicron In-beams for surface analysis. In the second experimental section boron implants in silicon have been used for studying depth profiling capabilities of the instrument. Sputtering yields of Si and degrees of ionization of both B and Si have been measured. It has been shown that implantation profiles may deviate considerably from Gaussian but can be described by means of mathematical distribution functions. In the third experimental section depth resolution of the erosion process has been studied by profiling a Ni/Cr multilayer sample (100 A single layer) and been found to be approximately constant over the depth range investigated. Quantization of depth profiles, usually distorted by matrix effects, has been attempted using the primary beam species (In) as internal implantation standard. Some problems in connection with the conversion of secondary ion micrographs to concentration maps are discussed. Elemental detection limits in multidimensional SIMS analysis are given in dependence of primary beam size and total eroded depth. (Author)

Irradiation-induced changes in the local environment of Si and Al in LnSiAlON glasses as probed by {sup 27}Al and {sup 29}Si NMR

Energy Technology Data Exchange (ETDEWEB)

Sangleboeuf, J.C. [Univ Rennes 1, CNRS, FRE 2717, LARMAUR, F-35042 Rennes (France); Dauce, R.; Le Floch, M.; Verdier, P. [Univ Rennes 1, Inst Chem, UMR 6512, CNRS, F-35042 Rennes (France); Dauce, R. [CE Cadarache, DEC/SESC, F-13018 St Paul Les Durance (France)

2007-03-15

Two compounds have been studied: an oxide glass from the Y-Si-Al-O system and an oxynitride glass from the Y-Si-Al-O-N system, both bombarded with Sn-ions (975 MeV, fluences ranging from 10{sup 12} to 2.7 * 10{sup 13} Sn/cm{sup 2}). The changes in the environment of the silicon and the aluminium were investigated using NMR spectroscopy. Irradiation by Sn ions leads to a loss of nitrogen in the silicon and probably the aluminium environments. Part of the aluminium changes from a network former coordination to a network modifier coordination while the oxide silicate network exhibits a higher cross-linking due to an increase of the population of bridging oxygen. Part of the aluminium in five-fold coordination is formed at the expense of aluminium in six-fold coordination in the case of the oxynitride glass and the changes in the silicon environment occur at lower fluences than for the oxide glass. (authors)

Diffusion processes in bombardment-induced surface topography

International Nuclear Information System (INIS)

Robinson, R.S.

1984-01-01

A treatment is given of the problem of surface diffusion processes occurring during surface topography development, whenever a surface is simultaneously seeded with impurities and ion bombarded. The development of controllable topography and the importance of surface diffusion parameters, which can be obtained during these studies, are also analyzed. 101 refs.; 7 figs.; 2 tabs

Energy dependence of angular distributions of sputtered particles by ion-beam bombardment at normal incidence

International Nuclear Information System (INIS)

Matsuda, Yoshinobu; Ueda, Yasutoshi; Uchino, Kiichiro; Muraoka, Katsunori; Maeda, Mitsuo; Akazaki, Masanori; Yamamura, Yasunori.

1986-01-01

The angular distributions of sputtered Fe-atoms were measured using the laser fluorescence technique during Ar-ion bombardment for energies of 0.6, 1, 2 and 3 keV at normal incidence. The measured cosine distribution at 0.6 keV progressively deviated to an over-cosine distribution at higher energies, and at 3 keV the angular distribution was an overcosine distribution of about 20 %. The experimental results agree qualitatively with calculations by a recent computer simulation code, ACAT. The results are explained by the competition between surface scattering and the effects of primary knock-on atoms, which tend to make the angular distributions over-cosine and under-cosine, respectively. (author)

Damage structure in Nimonic PE16 alloy ion bombarded to high doses and gas levels

International Nuclear Information System (INIS)

Farrell, K.; Packan, N.H.

1981-01-01

The Nimonic PE16 alloy in solution-treated-and-aged condition was bombarded simultaneously with nickel ions and α and deuteron beams at 625 0 C to doses of 80 to 313 dpa at He/dpa = 10 and D/dpa = 25. Microstructural changes consisted of the introduction of dislocations and of cavities, and the redistribuion of γ' precipitates to these defects. Cavitational swelling remained below 1%. Cavities were represented by several distinct size classes, the smaller ones believed to be gas bubbles, and some larger ones associated with preferred growth of precipitate. Formation of bubbles at grain boundaries, and large cavities at incoherent twins intensified the possibility of mechanical separation of interfaces under high-gas irradiation conditions

Preparation of a Si/SiO2 -Ordered-Mesoporous-Carbon Nanocomposite as an Anode for High-Performance Lithium-Ion and Sodium-Ion Batteries.

Science.gov (United States)

Zeng, Lingxing; Liu, Renpin; Han, Lei; Luo, Fenqiang; Chen, Xi; Wang, Jianbiao; Qian, Qingrong; Chen, Qinghua; Wei, Mingdeng

2018-04-03

In this work, an Si/SiO 2 -ordered-mesoporous carbon (Si/SiO 2 -OMC) nanocomposite was initially fabricated through a magnesiothermic reduction strategy by using a two-dimensional bicontinuous mesochannel of SiO 2 -OMC as a precursor, combined with an NaOH etching process, in which crystal Si/amorphous SiO 2 nanoparticles were encapsulated into the OMC matrix. Not only can such unique porous crystal Si/amorphous SiO 2 nanoparticles uniformly dispersed in the OMC matrix mitigate the volume change of active materials during the cycling process, but they can also improve electrical conductivity of Si/SiO 2 and facilitate the Li + /Na + diffusion. When applied as an anode for lithium-ion batteries (LIBs), the Si/SiO 2 -OMC composite displayed superior reversible capacity (958 mA h g -1 at 0.2 A g -1 after 100 cycles) and good cycling life (retaining a capacity of 459 mA h g -1 at 2 A g -1 after 1000 cycles). For sodium-ion batteries (SIBs), the composite maintained a high capacity of 423 mA h g -1 after 100 cycles at 0.05 A g -1 and an extremely stable reversible capacity of 190 mA h g -1 was retained even after 500 cycles at 1 A g -1 . This performance is one of the best long-term cycling properties of Si-based SIB anode materials. The Si/SiO 2 -OMC composites exhibited great potential as an alternative material for both lithium- and sodium-ion battery anodes. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Sputtering Yields of Si and Ni from the Ni1-xSix System Studied by Rutherford Backscattering Spectrometry

Science.gov (United States)

Kim, Su Chol; Yamaguchi, Satoru; Kataoka, Yoshihide; Iwami, Motohiro; Hiraki, Akio; Satou, Mamoru; Fujimoto, Fuminori

1982-01-01

Sputtering yields of Si and Ni from thin layer films of Ni-Si compounds (Ni1-xSix), including the pure materials (Ni and Si), caused by 5 keV Ar+ ion bombardment were investigated using backscattering spectrometry. The sputtering yield for Si from Ni1-xSix increased with increasing Si concentration. However, there is an abrupt decrease in the yield for Si concentrations above NiSi2 to pure Si. This is in clear contrast to the sputtering yield of Ni from Ni1-xSix which increased with increasing Ni concentration monotonously. These results are discussed on the basis of both the difference in the atomic density and the electronic state of the alloy.

Structural changes IN THE Kh20N45M4B nickel alloys and THE Kh16N15M3B steel due to helium ion bombardment

International Nuclear Information System (INIS)

Kalin, B.A.; Chernikov, U.N.; Chernov, I.I.; Kozhevnikov, O.A.; Shishkin, G.N.; Yakushin, V.L.

1986-01-01

Using transmission electron microscopy, x-ray structural analysis, and the thermal desorption techniques, the authors carried out a detailed study of the structural and phase changes, defect formation, and helium accumulation in the He + -bombarded 16-15 austenitic steels and 20-45 nickel alloys. Microstructure of the bombarded specimens was studied using the methods of transmission electron microscopy of thin foils in the EVM-100, and EM-301G electron microscopes. Results of x-ray studies on the bombarded specimens are presented. The conducted studies show that bombardment of structural materials with light ions can lead to significant structural damages and changes in the chemical and phase composition of the surface layer. The possible mechanisms of the changes in the chemical and phase composition include selective sputtering and radiation-induced accelerated diffusion of elements in the field of internal lateral stresses developing during the He + implantation process

The influence of ion energy, target temperature, dose rate and crystal order on the shape of bombardment induced pyramids on copper crystals

International Nuclear Information System (INIS)

Tanovic, L.; Whitton, J.L.; Kofod, S.

1978-01-01

Following recent studies of energetic ion bombardment of copper, which established the conditions necessary for the production of cones/pyramids, investigations have been extended to include the effects of change in ion energy, target temperature and dose rate. In addition, the authors have attempted a detailed analysis of the influence of sample crystal orientation on the final form of pyramids and have investigated the stability of the pyramids as a function of the total dose. These experiments, as in earlier work, have been done using very pure copper, mass-analyzed ion beams and free of any metal contamination from, for example, defining apertures. (Auth.)

Linear dose dependence of ion beam mixing of metals on Si

International Nuclear Information System (INIS)

Poker, D.B.; Appleton, B.R.

1985-01-01

These experiments were conducted to determine the dose dependences of ion beam mixing of various metal-silicon couples. V/Si and Cr/Si were included because these couples were previously suspected of exhibiting a linear dose dependence. Pd/Si was chosen because it had been reported as exhibiting only the square root dependence. Samples were cut from wafers of (100) n-type Si. The samples were cleaned in organic solvents, etched in hydrofluoric acid, and rinsed with methanol before mounting in an oil-free vacuum system for thin-film deposition. Films of Au, V, Cr, or Pd were evaporated onto the Si samples with a nominal deposition rate of 10 A/s. The thicknesses were large compared with those usually used to measure ion beam mixing and were used to ensure that conditions of unlimited supply were met. Samples were mixed with Si ions ranging in energy from 300 to 375 keV, chosen to produce ion ranges that significantly exceeded the metal film depth. Si was used as the mixing ion to prevent impurity doping of the Si substrate and to exclude a background signal from the Rutherford backscattering (RBS) spectra. Samples were mixed at room temperature, with the exception of the Au/Si samples, which were mixed at liquid nitrogen temperature. The samples were alternately mixed and analyzed in situ without exposure to atmosphere between mixing doses. The compositional distributions after mixing were measured using RBS of 2.5-MeV 4 He atoms

Amorphization and the effect of implanted ions in SiC

International Nuclear Information System (INIS)

Snead, L.L.; Zinkle, S.J.

1994-01-01

The effects of implanted ion chemistry and displacement damage on the amorphization threshold dose of SiC were studied using cross-section transmission electron microscopy. Room temperature as well as 200 and 400 C irradiations were carried out with 3.6 MeV Fe, 1.8 MeV Cl, 1 MeV He or 0.56 MeV Si ions. The room temperature amorphization threshold dose in irradiated regions well separated from the implanted ions was found to range from 0.3 to 0.5 dpa for the four different ion species. The threshold dose for amorphization in the He, Si and Fe ion-implanted regions was also ∼0.3 to 0.5 dpa. On the other hand, the amorphization threshold in the Cl-implanted region was only about 0.1 dpa. The volume change associated with amorphization was ∼17%. No evidence for amorphization was obtained in specimens irradiated at 200 or 400 C. An understanding of the microstructural evolution of SiC under irradiation is critical to the application of these materials in fusion energy systems

Structural modification by swift heavy ion at metal/Si interface

Energy Technology Data Exchange (ETDEWEB)

Sisodia, Veenu; Jain, R.K.; Bhattacharaya, D.; Kabiraj, D.; Jain, I.P. E-mail: ipjain46@sify.com

2003-06-01

Transition metal silicides produced by swift heavy ion (SHI) irradiation have found applications in ultra-large-scale integrated circuits due to their small contact resistivities and higher thermal and chemical stabilities. In the present work, the mixing in Ni/Si and Ti/Si systems was studied under irradiation with Au ions. A layer of Ni (15 nm) and Ti (18 nm) was deposited by e-gun evaporation on Si (1 0 0) substrate at 10{sup -8} Torr vacuum. The samples were irradiated with 95 Mev Au ions at room temperature to a fluence of 10{sup 13} ions/cm{sup 2} and 1 pna beam current. Rutherford backscattering spectroscopy and X-Ray reflectivity have been employed to characterize the samples. The large electronic excitation due to SHI irradiation produces defects in the system. It is expected that SHI irradiation followed by thermal annealing in Ni/Si system will provide the required energy to the atoms to diffuse across the interface resulting in mixing.

Damage accumulation in ceramics during ion implantation

International Nuclear Information System (INIS)

McHargue, C.J.; Farlow, G.C.; Begun, G.M.; Williams, J.M.; White, C.W.; Appleton, B.R.; Sklad, P.S.; Angelini, P.

1985-01-01

The damage structures of α-Al 2 O 3 and α-SiC were examined as functions of ion implantation parameters using Rutherford backscattering-channeling, analytical electron microscopy, and Raman spectroscopy. Low temperatures or high fluences of cations favor formation of the amorphous state. At 300 0 K, mass of the bombarding species has only a small effect on residual damage, but certain ion species appear to stabilize the damage microstructure and increase the rate of approach to the amorphous state. The type of chemical bonding present in the host lattice is an important factor in determining the residual damage state

Tuning the shape and damage in ion-beam induced ripples on silicon

Energy Technology Data Exchange (ETDEWEB)

Biermanns, Andreas; Pietsch, Ullrich [Universitaet Siegen, Festkoerperphysik, 57068 Siegen (Germany); Hanisch, Antje; Grenzer, Joerg [Helmholtz-Zentrum Dresden-Rossendorf, Institut fuer Ionenstrahlphysik und Materialforschung, P.O. Box 510119, 01314 Dresden (Germany); Metzger, Till Hartmut [ESRF, 6 rue Jules Horowitz, BP220, 38043 Grenoble Cedex (France)

2011-11-15

We investigate the influence of ion beam parameters on the ripple formation on Si(001) surfaces after bombardment with Xe{sup +} ions of 25 keV kinetic energy using a scanning ion beam system. By combining grazing incidence X-ray diffraction, small angle scattering and X-ray reflectivity, we show that during ion irradiation with 70 off-normal angle of incidence, changing the size of the irradiated area leads to an increased number of defects at the interface towards crystalline material. At 65 angle of incidence, the ripple amplitude grows. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

NARCIS (Netherlands)

Dobrovolskiy, S.; Yakshin, A. E.; Tichelaar, F. D.; Verhoeven, J.; E. Louis,; F. Bijkerk,

2010-01-01

Si/SiC multilayer systems for XUV reflection optics with a periodicity of 10-20 nm were produced by sequential deposition of Si and implantation of 1 key CHx+ ions. Only about 3% of the implanted carbon was transferred into the SIC, with a thin, 0.5-1 nm, buried SIC layer being formed. We

Spatial variation in void volume during charged particle bombardment: the effects of injected interstitials

International Nuclear Information System (INIS)

Lee, E.H.; Mansur, L.K.; Yoo, M.H.

1979-01-01

Experimental observations of the void volume at several depths along the range of 4 MeV Ni ions in 316 stainless steel are reported. The specimens were first preconditioned by neutron irradiation at temperatures of 450 and 584 0 C to fluences of approximately 8 x 10 26 n/m -2 . The void volume after ion bombardment to 60 dpa at the peak damage depth is significantly lower at the peak damage depth than in the region between that and the free surface. The ratio of the step height to void volume at the depth of peak energy deposition between regions masked from and exposed to the beam is strongly dependent on bombardment temperature. The reduction of void volume near the peak damage depth is larger for the 584 0 C than for the 450 0 C preconditioned material. These observations are consistent with recent theoretical results which account for the injection of the bombarding ions as self-interstitials. The theory necessary to understand the effect is developed

Nano-SiC region formation in (100) Si-on-insulator substrate: Optimization of hot-C+-ion implantation process to improve photoluminescence intensity

Science.gov (United States)

Mizuno, Tomohisa; Omata, Yuhsuke; Kanazawa, Rikito; Iguchi, Yusuke; Nakada, Shinji; Aoki, Takashi; Sasaki, Tomokazu

2018-04-01

We experimentally studied the optimization of the hot-C+-ion implantation process for forming nano-SiC (silicon carbide) regions in a (100) Si-on-insulator substrate at various hot-C+-ion implantation temperatures and C+ ion doses to improve photoluminescence (PL) intensity for future Si-based photonic devices. We successfully optimized the process by hot-C+-ion implantation at a temperature of about 700 °C and a C+ ion dose of approximately 4 × 1016 cm-2 to realize a high intensity of PL emitted from an approximately 1.5-nm-thick C atom segregation layer near the surface-oxide/Si interface. Moreover, atom probe tomography showed that implanted C atoms cluster in the Si layer and near the oxide/Si interface; thus, the C content locally condenses even in the C atom segregation layer, which leads to SiC formation. Corrector-spherical aberration transmission electron microscopy also showed that both 4H-SiC and 3C-SiC nanoareas near both the surface-oxide/Si and buried-oxide/Si interfaces partially grow into the oxide layer, and the observed PL photons are mainly emitted from the surface SiC nano areas.

Ion beam synthesis and characterization of metastable group-IV alloy semiconductors

Energy Technology Data Exchange (ETDEWEB)

Kobayashi, Naoto; Hasegawa, Masataka; Hayashi, Nobuyuki; Makita, Yunosuke; Shibata, Hajime [Electrotechnical Lab., Tsukuba, Ibaraki (Japan); Katsumata, Hiroshi; Uekusa, Shin-ichiro

1997-03-01

New Group-IV metastable alloy semiconductors and their heterostructures based on combinations of C-Si-Ge-Sn are recently attracting interest because of feasible new electronic and optoelectronic application in Si-technology and here research works on synthesis and characterization of the epitaxial heterostructures of Si-C, Si-Sn on Si fabricated by ion implantation together either with ion-beam-induced epitaxial crystallization (IBIEC) or solid phase epitaxial growth (SPEG) have been investigated. Formations of layers of Si{sub 1-y}C{sub y} (y=0.014 at peak concentration) on Si(100) have been performed by high-dose implantation of 17 keV C ions and successive IBIEC with 400 keV Ar or Ge ion bombardments at 300-400degC or SPEG up to 750degC. Crystalline growth by IBIEC has shown a lower growth rate in Si{sub 1-y}C{sub y}/Si than in intrinsic Si due mainly to the strain existence, which was observed by the X-ray diffraction (XRD) measurements. Photoluminescence(PL) measurements have revealed I{sub 1} or G line emissions that are relevant to small vacancy clusters or C pair formation, respectively. The crystalline growth of Si{sub 1-z}Sn{sub z} layers by 110 keV {sup 120}Sn ion implantation (z=0.029 and z=0.058 at peak concentration) into Si(100) followed either by IBIEC or by SPEG has been also investigated. PL emission from both IBIEC-grown and SPEG-grown samples with the lower Sn concentration has shown similar peaks to those by ion-implanted and annealed Si samples with intense I{sub 1} or I{sub 1}-related (Ar) peaks. Present results suggest that IBIEC has a feature for the non-thermal equilibrium fabrication of Si-C and Si-Sn alloy semiconductors. (J.P.N.)

Formation mechanism and yield of molecules ejected from ZnS, CdS, and FeS2 during ion bombardment

International Nuclear Information System (INIS)

Nikzad, S.; Calaway, W.F.; Pellin, M.J.; Young, C.E.; Gruen, D.M.; Tombrello, T.A.

1994-01-01

Neutral species ejected from single crystals of ZnS, CdS, and FeS 2 during ion bombardment by 3 keV Ar + were detected by laser post-ionization followed by time-of-flight mass spectrometry. While metal atoms (Fe, Zn, Cd) and S 2 were the dominant species observed, substantial amounts of S, FeS, Zn 2 , ZnS, Cd 2 , and CdS were also detected. The experimental results demonstrate that molecules represent a larger fraction of the sputtered yield than was previously believed from secondary ion mass spectrometry experiments. In addition, the data suggest that the molecules are not necessarily formed from adjacent atoms in the solid and that a modified form of the recombination model could provide a mechanism for their formation

Carbon nanotube growth from catalytic nano-clusters formed by hot-ion-implantation into the SiO{sub 2}/Si interface

Energy Technology Data Exchange (ETDEWEB)

Hoshino, Yasushi, E-mail: yhoshino@kanagawa-u.ac.jp [Department of Information Sciences, Kanagawa University, 2946 Tsuchiya, Hiratsuka, Kanagawa 259-1293 (Japan); Arima, Hiroki; Yokoyama, Ai; Saito, Yasunao; Nakata, Jyoji [Department of Information Sciences, Kanagawa University, 2946 Tsuchiya, Hiratsuka, Kanagawa 259-1293 (Japan)

2012-07-01

We have studied growth of chirality-controlled carbon nanotubes (CNTs) from hot-implantation-formed catalytic nano-clusters in a thermally grown SiO{sub 2}/Si substrate. This procedure has the advantage of high controllability of the diameter and the number of clusters by optimizing the conditions of the ion implantation. In the present study, Co{sup +} ions with ion dose of 8 Multiplication-Sign 10{sup 16} cm{sup -2} are implanted in the vicinity of the SiO{sub 2}/Si interface at 300 Degree-Sign C temperature. The implanted Co atoms located in the SiO{sub 2} layer has an amorphous-like structure with a cluster diameter of several nm. In contrast, implanted Co atoms in the Si substrate are found to take a cobalt silicide structure, confirmed by the high-resolution image of transmission electron microscope. CNTs are grown by microwave-plasma-enhanced chemical vapor deposition. We have confirmed a large amount of vertically-aligned multi-walled CNTs from the Co nano-clusters formed by the hot-ion-implantation near the SiO{sub 2}/Si interface.

Measurement of ion species produced due to bombardment of 450 eV N{sub 2}{sup +} ions with hydrocarbons-covered surface of tungsten: Formation of tungsten nitride

Energy Technology Data Exchange (ETDEWEB)

Kumar, S. [Atomic Physics Laboratory, Department of Physics, Institute of Science, Banaras Hindu University, Varanasi 221005 (India); Bhatt, P. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Kumar, A. [Institute for Plasma Research, Bhat, Gandhinagar 382428 (India); Singh, B.K.; Singh, B.; Prajapati, S. [Atomic Physics Laboratory, Department of Physics, Institute of Science, Banaras Hindu University, Varanasi 221005 (India); Shanker, R., E-mail: shankerorama@gmail.com [Atomic Physics Laboratory, Department of Physics, Institute of Science, Banaras Hindu University, Varanasi 221005 (India)

2016-08-01

A laboratory experiment has been performed to study the ions that are produced due to collisions of 450 eV N{sub 2}{sup +} ions with a hydrocarbons-covered surface of polycrystalline tungsten at room temperature. Using a TOF mass spectrometry technique, the product ions formed in these collisions have been detected, identified and analyzed. Different ion–surface reaction processes, namely, neutralization, reflection, surface induced dissociation, surface induced chemical reactions and desorption are observed and discussed. Apart from the presence of desorbed aliphatic hydrocarbon and other ions, the mass spectra obtained from the considered collisions show the formation and sputtering of tungsten nitride (WN). A layer of WN on tungsten surface is known to decrease the sputtering of bulk tungsten in fusion devices more effectively than when the tungsten is bombarded with other seeding gases (He, Ar). It is further noted that there is a negligible diffusion of N in the bulk tungsten at room temperature.

Dependence of ion - photon emission characteristics on the concentration of implanted atoms of the bombarding beam

International Nuclear Information System (INIS)

Belykh, S.F.; Evtukhov, R.N.; Redina, I.V.; Ferleger, V.Kh.

1989-01-01

Results of experiment, where Dy + beams, its spraying products emitting intensively optical radiation with continuous spectrum (CSR), are used for tantalum surface bombardment, are presented. The given experiment allowed one to separate the scattered particle CSR contribution and was conducted under controlled beam n atom concentration on the target surface. E 0 energy and j 0 dysprosium ion flux density made up respectively 3.5 keV and 3x10 5 Axcm -2 . The obtained result analysis has shown that a notable dependence of spectrum type on n value is detected. Dy scattered atoms to not emit CSR. The main contribution to CSR is made by sprayed particles, containing dysprosium atoms

Nanostructured Si/TiC composite anode for Li-ion batteries

International Nuclear Information System (INIS)

Zeng, Z.Y.; Tu, J.P.; Yang, Y.Z.; Xiang, J.Y.; Huang, X.H.; Mao, F.; Ma, M.

2008-01-01

Si/TiC nanocomposite anode was synthesized by a surface sol-gel method in combination with a following heat-treatment process. Through this process, nanosized Si was homogeneously distributed in a titanium carbide matrix. The electrochemically less active TiC working as a buffer matrix successfully prevented Si from cracking/crumbling during the charging/discharging process. The interspaces in the Si/TiC nanocomposite could offer convenient channels for Li ions to react with active Si. The Si/TiC composite exhibited a reversible charge/discharge capacity of about 1000 mAh g -1 with average discharge capacity fading of 1.8 mAh g -1 (0.18%) from 2nd to 100th cycle, indicating its excellent cyclability when used as anode materials for lithium-ion batteries

Ejection of fast recoil atoms from solids under ion bombardment (medium-energy ion scattering by solid surfaces: Pt. 3)

International Nuclear Information System (INIS)

Dodonoy, A.I.; Mashkova, E.S.; Molchanov, V.A.

1989-01-01

This paper is the third part of our review surface scattering. Part I, which was devoted to the scattering of ions by the surfaces of disordered solids, was published in 1972; Part II, concerning scattering by crystal surfaces, was published in 1974. Since the publication of these reviews the material contained in them has become obsolete in many respects. A more recent account of the status of the problem has been given in a number of studies, including the book by E.S. Mashkova and V.A. Molchanov, Medium-Energy Ion Scattering by Solid Surfaces (Atomizdat, Moscow, 1980), than extended version of which was published by North-Holland in 1985. We note, however, that at the time these reviews were written the study of fast recoil atoms had not been carried out systematically; the problem was studied only as a by-product of surface scattering and sputtering. For this reason, in the above-mentioned works and in other reviews the data relating to recoil atoms were considered only occasionally. In recent years there have appeared a number of works - theoretical, experimental and computer -specially devoted to the study of the ejection of recoil atoms under ion bombardment. A number of interesting effects, which are due to the crystal structure of the target, have been discovered. It therefore, appeared desirable to us to systematize the available material and to present it as Part III of our continuing review. (author)

Energy dependence of fusion evaporation-residue cross sections in the 28Si+28Si reaction

International Nuclear Information System (INIS)

Vineyard, M.F.; Bauer, J.S.; Gosdin, C.H.; Trotter, R.S.; Kovar, D.G.; Beck, C.; Henderson, D.J.; Janssens, R.V.F.; Wilkins, B.D.; Rosner, G.; Chowdhury, P.; Ikezoe, H.; Kuhn, W.; Kolata, J.J.; Hinnefeld, J.D.; Maguire, C.F.; Mateja, J.F.; Prosser, F.W.; Stephans, G.S.F.

1990-01-01

Velocity distributions of mass-identified evaporation residues produced in the 28 Si+ 28 Si reaction have been measured at bombarding energies of 174, 215, 240, 309, 397, and 452 MeV using time-of-flight techniques. These distributions were used to identify evaporation residues and to separate the complete-fusion and incomplete-fusion components. Angular distributions and total cross sections were extracted at all six bombarding energies. The complete-fusion evaporation-residue cross sections and the deduced critical angular momenta are compared with lower energy data and the predictions of existing models

Improvement of the wear resistance of electroplated Au-Ni coatings by Zr ion bombardment of Ni-B sublayer

International Nuclear Information System (INIS)

Lyazgin, Alexander; Shugurov, Artur; Sergeev, Viktor; Neufeld, Vasily; Panin, Alexey; Shesterikov, Evgeny

2015-01-01

The effect of bombardment of the Ni-B sublayer by Zr ion beams on the surface morphology and tribomechanical properties of Au-Ni coatings was investigated. It was found that the treatment has no significant effect on the surface roughness and grain size of the Au-Ni coatings, while it provides essential reducing of their friction coefficient and improvement of wear resistance. It is shown that increased wear resistance of these coatings was caused by their strain hardening resulted from localization of plastic strain. The optimal Zr fluence were determined that provide the maximum reduction of linear wear of the coatings

On formation of silicon nanocrystals under annealing SiO2 layers implanted with Si ions

International Nuclear Information System (INIS)

Kachurin, G.A.; Yanovskaya, S.G.; Volodin, V.A.; Kesler, V.G.; Lejer, A.F.; Ruault, M.-O.

2002-01-01

Raman scattering, X-ray photoelectron spectroscopy, and photoluminescence have been used to study the formation of silicon nanocrystals in SiO 2 implanted with Si ions. Si clusters have been formed at once in the postimplanted layers, providing the excessive Si concentration more ∼ 3 at. %. Si segregation with Si-Si 4 bonds formation is enhanced as following annealing temperature increase, however, the Raman scattering by Si clusters diminishes. The effect is explained by a transformation of the chain-like Si clusters into compact phase nondimensional structures. Segregation of Si nanoprecipitates had ended about 1000 deg C, but the strong photoluminescence typical for Si nanocrystals manifested itself only after 1100 deg C [ru

Marker experiments in growth studies of Ni2Si, Pd2Si, and CrSi2 formed both by thermal annealing and by ion mixing

International Nuclear Information System (INIS)

Hung, L.S.; Mayer, J.W.; Pai, C.S.; Lau, S.S.

1985-01-01

Inert markers (evaporated tungsten and silver) were used in growth studies of silicides formed both by thermal annealing and by ion mixing in the Ni/Si, Pd/Si, and Cr/Si systems. The markers were initially imbedded inside silicides and backscattering spectrometry was used to determine the marker displacement after different processing conditions. The results obtained in thermal annealing are quite consistent with that found in previous investigations. Ni is the dominant diffusing species in Ni 2 Si, while Si is the diffusing species in CrSi 2 . In Pd 2 Si, both Pd and Si are moving species with Pd the faster of the two. In contrast, in growth of silicides by ion irradiation Si is the faster diffusing species in all three systems

Structural and electrical characterization of ion beam synthesized and n-doped SiC layers

Energy Technology Data Exchange (ETDEWEB)

Serre, C.; Perez-Rodriguez, A.; Romano-Rodriguez, A.; Morante, J.R. [Barcelona Univ. (Spain). Dept. Electronica; Panknin, D.; Koegler, R.; Skorupa, W. [Forschungszentrum Rossendorf, Dresden (Germany); Esteve, J.; Acero, M.C. [CSIC, Bellaterra (Spain). Centre Nacional de Microelectronica

2001-07-01

This work reports preliminary data on the ion beam synthesis of n-doped SiC layers. For this, two approaches have been studied: (i) doping by ion implantation (with N{sup +}) of ion beam synthesized SiC layers and (ii) ion beam synthesis of SiC in previously doped (with P) Si wafers. In the first case, the electrical data show a p-type overcompensation of the SiC layer in the range of temperatures between -50 C and 125 C. The structural (XRD) and in-depth (SIMS, Spreading Resistance) analysis of the samples suggest this overcompensation to be induced by p-type active defects related to the N{sup +} ion implantation damage, and therefore the need for further optimization their thermal processing. In contrast, the P-doped SiC layers always show n-type doping. This is also accompanied by a higher structural quality, being the spectral features of the layers similar to those from the not doped material. Electrical activation of P in the SiC lattice is about one order of magnitude lower than in Si. These data constitute, to our knowledge, the first results reported on the doping of ion beam synthesized SiC layers. (orig.)

Dissociative scattering of low-energy SiF{sub 3}{sup +} and SiF{sup +} ions (5-200 eV) on Cu(100) surface

Energy Technology Data Exchange (ETDEWEB)

Yamamoto, Hiroyuki; Baba, Yuji; Sasaki, T A [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

1997-03-01

Dissociative scattering of molecular SiF{sub 3}{sup +} and SiF{sup +} ions from a Cu(100) single crystal surface has been investigated in the incident energy range from 5 eV to 200 eV with a scattering angle of 77deg. The scattered ion intensity of dissociative ions and parent molecular ions were measured as a function of incident ion energy. The observed data show that onset energies of dissociation for SiF{sub 3}{sup +} and SiF{sup +} ions are 30 eV and 40 eV, respectively. The obtained threshold energies are consistent with a impulsive collision model where the dissociation of incident ion is caused by vibrational excitation during collision. (author)

Ion-beam synthesis and photoluminescence of SiC nanocrystals assisted by MeV-heavy-ion-beam annealing

International Nuclear Information System (INIS)

Khamsuwan, J.; Intarasiri, S.; Kirkby, K.; Chu, P.K.; Singkarat, S.; Yu, L.D.

2012-01-01

This work explored a novel way to synthesize silicon carbide (SiC) nanocrystals for photoluminescence. Carbon ions at 90 keV were implanted in single crystalline silicon wafers at elevated temperature, followed by irradiation using xenon ion beams at an energy of 4 MeV with two low fluences of 5 × 10 13 and 1 × 10 14 ions/cm 2 at elevated temperatures for annealing. X-ray diffraction, Raman scattering, infrared spectroscopy and transmission electron microscopy were used to characterize the formation of nanocrystalline SiC. Photoluminescence was measured from the samples. The results demonstrated that MeV-heavy-ion-beam annealing could indeed induce crystallization of SiC nanocrystals and enhance emission of photoluminescence with violet bands dominance due to the quantum confinement effect.

Hydrogen pumping and release by graphite under high flux plasma bombardment

International Nuclear Information System (INIS)

Hirooka, Y.; Leung, W.K.; Conn, R.W.; Goebel, D.M.; LaBombard, B.; Nygren, R.; Wilson, K.L.

1988-01-01

Inert gas (helium or argon) plasma bombardment has been found to increase the surface gas adsorptivity of isotropic graphite (POCO-graphite), which can then getter residual gases in a high vacuum system. The inert gas plasma bombardment was carried out at a flux ≅ 1 x 10 18 ions s -1 cm -2 to a fluence of the order of 10 21 ions/cm 2 and at temperatures around 800 0 C. The gettering capability of graphite can be easily recovered by repeating inert gas plasma bombardment. The activated graphite surface exhibits a smooth, sponge-like morphology with significantly increased pore openings, which correlates with the observed increase in the surface gas adsorptivity. The activated graphite surface has been observed to pump hydrogen plasma particles as well. From calibrated H-alpha measurements, the dynamic hydrogen retention capacity is evaluated to be as large as 2 x 10 18 H/cm 2 at temperatures below 100 0 C and at a plasma bombarding energy of 300 eV. The graphite temperature was varied between 15 and 480 0 C. Due to the plasma particle pumping capability, hydrogen recycling from the activated graphite surface is significantly reduced, relative to that from a pre-saturated surface. A pre-saturated surface was also observed to reproducibly pump a hydrogen plasma to a concentration of 9.5 x 10 17 H/cm 2 . The hydrogen retention capacity of graphite is found to decrease with increasing temperature. A transient pumping mechanism associated with the sponge-like surface morphology is conjectured to explain the large hydrogen retention capacity. Hydrogen release behavior under helium and argon plasma bombardment was also investigated, and the result indicated the possibility of some in-pore retrapping effect. 43 refs., 11 figs

Cavities at the Si projected range by high dose and energy Si ion implantation in Si

International Nuclear Information System (INIS)

Canino, M.; Regula, G.; Lancin, M.; Xu, M.; Pichaud, B.; Ntzoenzok, E.; Barthe, M.F.

2009-01-01

Two series of n-type Si samples α and β are implanted with Si ions at high dose (1 x 10 16 ) and high energies, 0.3 and 1.0 MeV, respectively. Both sort of samples are then implanted with 5 x 10 16 He cm -2 (at 10 or 50 keV) and eventually with B atoms. Some of the samples are annealed at temperatures ranging from 800 to 1000 deg. C to allow the thermal growth of He-cavities, located between sample surface and the projected range (R p ) of Si. After the triple ion implantation, which corresponds to defect engineering, samples were characterized by cross-section transmission electron microscopy (XTEM). Voids (or bubbles) are observed not only at the R p (He) on all annealed samples, but also at the R p (Si) on β samples implanted with He at 50 keV. The samples are also studied by positron annihilation spectroscopy (PAS) and the spectra confirm that as-implanted samples contain di-vacancies and that the annealed ones, even at high temperature have bigger open volumes, which are assumed to be the same voids observed by XTEM. It is demonstrated that a sole Si implantation at high energy and dose is efficient to create cavities which are thermally stable up to 1000 deg. C only in the presence of He.

Ion-induced Auger electron spectroscopy: a new detection method for compositional homogeneities of alloyed atoms in silicon

Energy Technology Data Exchange (ETDEWEB)

Hiraki, A [Osaka Univ., Japan; Imura, T; Iwami, M; Kim, S C; Ushita, K; Okamoto, H; Hamakawa, Y

1979-09-01

Auger spectra of Si LMM transitions induced by keV Ar/sup +/ ion bombardment of Si alloy systems have been studied. The spectra observed are composed of two well-defined peaks termed elsewhere the atomic-like and bulk-like peaks, repsectively. A clear correlation has been found between the intensity of the atomic-like peak lying at 88 eV and the content of the foreign atoms alloyed with Si. Experiments were carried out on metallic silicides, or Si alloys with Au, Cu, Pd and Ni, and covalently bonded non-metallic Si alloys of C and H. From these studies, we propose that ion-induced Auger electron spectroscopy might be a useful tool for the determination of alloyed foreign atoms as well as for the study of their compositional homogeneity in binary alloy systems of silicon.

Electron emission from molybdenum under ion bombardment

International Nuclear Information System (INIS)

Ferron, J.; Alonso, E.V.; Baragiola, R.A.; Oliva-Florio, A.

1981-01-01

Measurements are reported of electron emission yields of clean molybdenum surfaces under bombardment with H + , H 2 + , D + , D 2 + , He + , N + , N 2 + , O + , O 2 + , Ne + , Ar + , Kr + and Xe + in the wide energy range 0.7-60.2 keV. The clean surfaces were produced by inert gas sputtering under ultrahigh vacuum. The results are compared with those predicted by a core-level excitation model. The disagreement found when using correct values for the energy levels of Mo is traced to wrong assumptions in the model. A substantially improved agreement with experiment is obtained using a model in which electron emission results from the excitation of valence electrons from the target by the projectiles and fast recoiling target atoms. (author)

P and Si functionalized MXenes for metal-ion battery applications

KAUST Repository

Zhu, Jiajie

2017-04-10

MXenes are a family of two-dimensional materials, composed of early transition metal carbides, nitrides, and carbonitrides, with great potential in energy storage systems, in particular in electrodes for Li, Na, K-ion batteries. However, so far the capacities are not competitive. In this context, we investigate P and Si functionalized MXenes for metal-ion battery applications, using first-principles calculations, since P and Si provide reaction products with high ion content. Replacement of the F and OH ligands of Ti2C and V2C with P and Si is demonstrated to be feasible (energy barriers of less than 0.128 eV) and the ion diffusion barriers turn out to be less than 0.32 eV. Importantly, the Li, Na, and K capacities are predicted to be 1767 mAh g−1, 711 mAh g−1, and 711 mAh g−1, respectively, thus being much higher than in the case of F and OH functionalization.

Ion-beam mixing in silicon and germanium at low temperatures

International Nuclear Information System (INIS)

Clark, G.J.; Marwick, A.D.; Poker, D.B.

1982-01-01

Ion-beam mixing of thin marker layers in amorphous silicon and germanium was studied using irradiations with Xe ions at temperatures of 34k and 77k. The marker species, ion energies and doses were: in silicon, markers of Ge and Pt irradiated with 200-keV Xe up to 2.7x10 16 ions cm -2 ; and in germanium, markers of Al and Si bombarded with 295-keV Xe up to 1.63x10 16 ions cm -2 . In silicon, Pt markers were found to broaden at about the same rate at 34k and 77k; and the rate of broadening was similar to that found by other workers when expressed as an efficiency of mixing, i.e., when dependence on ion dose and deposited energy was factored out. However, a Ge marker irradiated at 34k did not broaden from its original thickness. In germanium, markers of both Al and Si were mixed by irradiation at 34k, but at 77k only the Al marker broadened; the Si marker did not. The broadening of the markers is ascribed to ballistic mixing, while the cases where no broadening occurred are explicable if diffusion by a defect mechanism transported displaced marker atoms back to traps near their original sites

Effect of simultaneous ion irradiation on microstructural change of SiC/SiC composites at high temperature

International Nuclear Information System (INIS)

Taguchi, T.; Wakai, E.; Igawa, N.; Nogami, S.; Snead, L.L.; Hasegawa, A.; Jitsukawa, S.

2002-01-01

The effect of simultaneous triple ion irradiation of He, H and Si on microstructural evolution of two kinds of SiC/SiC composites (HNS composite (using Hi-Nicalon type S SiC fiber) and TSA composite (using Tyranno SA SiC fiber)) at 1000 deg. C has been investigated. The microstructure observations of SiC/SiC composites irradiated to 10 dpa were examined by transmission electron microscopy. He bubbles were hardly formed in matrix of TSA composite, but many helium bubbles and some cracks were observed at grain boundaries of matrix of HNS composite. He bubbles and cracks were not, on the other hand, observed in the both fiber fabrics of HNS and TSA composites. Debonding between fiber and carbon layer following irradiation region was not observed in the both composites. Under these irradiation conditions, TSA composite showed the better microstructural stability against ion beams irradiation than one of HNS composite

Nitrogen ion induced nitridation of Si(111) surface: Energy and fluence dependence

Energy Technology Data Exchange (ETDEWEB)

Kumar, Praveen [Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064 (India); ISOM, Universidad Politecnia de Madrid, 28040 (Spain); Kumar, Mahesh [Physics and Energy Harvesting Group, National Physical Laboratory, New Delhi 110012 (India); Nötzel, R. [ISOM, Universidad Politecnia de Madrid, 28040 (Spain); Shivaprasad, S.M., E-mail: smsprasad@jncasr.ac.in [Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064 (India)

2014-06-01

We present the surface modification of Si(111) into silicon nitride by exposure to energetic N{sub 2}{sup +} ions. In-situ UHV experiments have been performed to optimize the energy and fluence of the N{sub 2}{sup +} ions to form silicon nitride at room temperature (RT) and characterized in-situ by X-ray photoelectron spectroscopy. We have used N{sub 2}{sup +} ion beams in the energy range of 0.2–5.0 keV of different fluence to induce surface reactions, which lead to the formation of Si{sub x}N{sub y} on the Si(111) surface. The XPS core level spectra of Si(2p) and N(1s) have been deconvoluted into different oxidation states to extract qualitative information, while survey scans have been used for quantifying of the silicon nitride formation, valence band spectra show that as the N{sub 2}{sup +} ion fluence increases, there is an increase in the band gap. The secondary electron emission spectra region of photoemission is used to evaluate the change in the work function during the nitridation process. The results show that surface nitridation initially increases rapidly with ion fluence and then saturates. - Highlights: • A systematic study for the formation of silicon nitride on Si(111). • Investigation of optimal energy and fluence for energetic N{sub 2}{sup +} ions. • Silicon nitride formation at room temperature on Si(111)

Target bombardment by ion beams generated in the Focus experiment

International Nuclear Information System (INIS)

Bernard, Alain; Coudeville, Alain; Garconnet, J.-P.; Jolas, A.; Mascureau, J. de; Nazet, Christian.

1976-01-01

In a Mather-Focus experiment, it was shown that 80% of the neutron emitted were generated through bombardment. The apparatus was operated with various targets at a distance of 13mm from the anode. In the low pressure regime, a deuteron beam of high energy was produced. Its emission duration was measured using a CD 2 target [fr

Ion beam effects on the surface and near-surface composition of TaSi2

International Nuclear Information System (INIS)

Valeri, S.; Di Bona, A.; Ottaviani, G.; Procop, M.

1991-01-01

Low-energy (0.7-4.5 keV) ion bombardment effects on polycrystalline TaSi 2 at sputter steady state and in various intermediate steps have been investigated, in the temperature range up to 550degC, to determine the time and temperature dependence of the altered layer formation. This in turn enables a better knowledge of the synergistic effects of the processes mentioned above. At low temperatures (T≤410degC) the surface is silicon depleted, and the depletion is even more severe in the subsurface region up to a depth of several tens of angstroems; silicon preferential sputtering and radiation-enhanced segregation assisted by the displacement mixing-induced motion of atoms are assumed to be responsible for this composition profile, while thermally activated diffusion processes become operative above 410degC, reducing progressively the concentration gradient between the surface and the subsurface zone. The composition at different depths has been determined from Auger peaks for different kinetic energies, by varying the take-off angle and finally by sputter profiling at low in energy the high energy processed surfaces. Quantitative analysis has been performed by XPS and AES by using the elemental standard method. (orig.)

Estimation of the depth resolution of secondary ion mass spectrometry at the interface SiO2/Si

Science.gov (United States)

Kocanda, J.; Fesič, V.; Veselý, M.; Breza, J.; Kadlečíková, M.

1995-08-01

Similarities between the processes that occur during sputtering of monocrystalline Si by reactive O2+ primary ions and the interface SiO2/monocrystalline Si by noble gas ions (e.g., by Ar+) have motivated us to utilize the semiempirical model of P. C. Zalm and C. J. Vriezema [Nucl. Instrum. Methods B 67, 495 (1992)], modified later by M. Petravić, B. G. Svensson, and J. S. Williams [Appl. Phys. Lett. 62, 278 (1993)] to calculate the decay length λb, as defined by J. B. Clegg [Surf. Interface Anal. 10, 322 (1987)], at the SiO2/Si interface. The measured and calculated results agree remarkably well. Inconsistency observed to be larger than 100% for glancing incidence angles confirms limitations of this model that were admitted already by its authors.

Positron Annihilation Study of Ion-irradiated Si

International Nuclear Information System (INIS)

Shin, Jung Ki; Kwon, Jun Hyun; Lee, Jong Yong

2009-01-01

Structural parts like a spaceship, satellite and solar cell are composed of metal alloy or semiconductor materials. Especially, Si is used as a primary candidate alloy. But, manned and robotic missions to the Earth's moon and Mars are exposed to a continuous flux of Galactic Cosmic Rays (GCR) and occasional, but intense, fluxes of Solar Energetic Particles. These natural radiations impose hazards to manned exploration. Irradiation of cosmic particle induces various changes in the mechanical and physical properties of device steels. It is, therefore, important to investigate radiation damage to the component materials in semiconductor. The evolution of radiation-induced defects leads to degradation of the mechanical properties. One of them includes irradiation embrittlement, which can cause a loss of ductility and further increase the probability of a brittle fracture. It can be more dangerous in the space. Positron annihilation lifetime spectroscopy(PALS) have been applied to investigate the production of vacancy-type defects for Ion-irradiated Si wafer penetrated by H, He, O and Fe ions. Then, we carried out a comparison with an un-irradiated Si wafer

Stoichiometric carbon nitride synthesized by ion beam sputtering and post nitrogen ion implantation

International Nuclear Information System (INIS)

Valizadeh, R.; Colligon, J.S.; Katardiev, I.V.; Faunce, C.A.; Donnelly, S.E.

1998-01-01

Full text: Carbon nitride films have been deposited on Si (100) by ion beam sputtering a vitreous graphite target with nitrogen and argon ions with and without concurrent N2 ion bombardment at room temperature. The sputtering beam energy was 1000 eV and the assisted beam energy was 300 eV with ion / atom arrival ratio ranging from 0.5 to 5. The carbon nitride films were deposited both as single layer directly on silicon substrate and as multilayer between two layers of stoichiometric amorphous silicon nitride and polycrystalline titanium nitride. The deposited films were implanted ex-situ with 30 keV nitrogen ions with various doses ranging from 1E17 to 4E17 ions.cm -2 and 2 GeV xenon ion with a dose of 1E12 ions.cm -2 . The nitrogen concentration of the films was measured with Rutherford Backscattering (RBS), Secondary Neutral Mass Spectrometry (SNMS) and Parallel Electron Energy Loss Spectroscopy (PEELS). The nitrogen concentration for as deposited sample was 34 at% and stoichiometric carbon nitride C 3 N 4 was achieved by post nitrogen implantation of the multi-layered films. Post bombardment of single layer carbon nitride films lead to reduction in the total nitrogen concentration. Carbon K edge structure obtained from PEELS analysis suggested that the amorphous C 3 N 4 matrix was predominantly sp 2 bonded. This was confirmed by Fourier Transforrn Infra-Red Spectroscopy (FTIR) analysis of the single CN layer which showed the nitrogen was mostly bonded with carbon in nitrile (C≡N) and imine (C=N) groups. The microstructure of the film was determined by Transmission Electron Microscopy (TEM) which indicated that the films were amorphous

Optical properties of Ag nanoclusters formed by irradiation and annealing of SiO{sub 2}/SiO{sub 2}:Ag thin films

Energy Technology Data Exchange (ETDEWEB)

Güner, S., E-mail: sguner@fatih.edu.tr [Department of Physics, Fatih University, 34500 Büyükçekmece, İstanbul (Turkey); Budak, S. [Department of Electrical Engineering and Computer Science, Alabama A and M University, Huntsville, AL 35810 (United States); Gibson, B. [Department of Physics, UAH, Huntsville, AL 35899 (United States); Ila, D. [Department of Chemistry and Physics, Fayetteville St. University, Fayetteville, NC 28301 (United States)

2014-08-15

Highlights: • Fabrication of films through the Reactive Electron Beam deposition technique. • Perfect and reproducible Ag nanoclustered host matrix. • Potential technological applicability in thermoelectric devices. - Abstract: We have deposited five periodic SiO{sub 2}/SiO{sub 2} + Ag multi-nano-layered films on fused silica substrates using physical vapor deposition technique. The co-deposited SiO{sub 2}:Ag layers were 2.7–5 nm and SiO{sub 2} buffer layers were 1–15 nm thick. Total thickness was between 30 and 105 nm. Different concentrations of Ag, ranging from 1.5 to 50 molecular% with respect to SiO{sub 2} were deposited to determine relevant rates of nanocluster formation and occurrence of interaction between nanoclusters. Using interferometry as well as in situ thickness monitoring, we measured the thickness of the layers. The concentration of Ag in SiO{sub 2} was measured with Rutherford Backscattering Spectrometry (RBS). To nucleate Ag nanoclusters, 5 MeV cross plane Si ion bombardments were performed with fluence varying between 5 × 10{sup 14} and 1 × 10{sup 16} ions/cm{sup 2} values. Optical absorption spectra were recorded in the range of 200–900 nm in order to monitor the Ag nanocluster formation in the thin films. Thermal annealing treatment at different temperatures was applied as second method to form varying size of nanoclusters. The physical properties of formed super lattice were criticized for thermoelectric applications.

Cluster-surface collisions: Characteristics of Xe55- and C20 - Si[111] surface bombardment

International Nuclear Information System (INIS)

Cheng, H.

1999-01-01

Molecular dynamics (MD) simulations are performed to study the cluster-surface collision processes. Two types of clusters, Xe 55 and C 20 are used as case studies of materials with very different properties. In studies of Xe 55 - Si[111] surface bombardment, two initial velocities, 5.0 and 10.0 km/s (normal to the surface) are chosen to investigate the dynamical consequences of the initial energy or velocity in the cluster-surface impact. A transition in the speed of kinetic energy propagation, from subsonic velocities to supersonic velocities, is observed. Energy transfer, from cluster translational motion to the substrate, occurs at an extremely fast rate that increases as the incident velocity increases. Local melting and amorphous layer formation in the surfaces are found via energetic analysis of individual silicon atoms. For C 20 , the initial velocity ranges from 10 to 100 km/s. The clusters are damaged immediately upon impact. Similar to Xe 55 , increase in the potential energy is larger than the increase in internal kinetic energy. However, the patterns of energy distribution are different for the two types of clusters. The energy transfer from the carbon clusters to Si(111) surface is found to be slower than that found in the Xe clusters. Fragmentation of the carbon cluster occurs when the initial velocity is greater than 30 km/s. At 10 km/s, the clusters show recrystallization at later times. The average penetration depth displays a nonlinear dependence on the initial velocity. Disturbance in the surface caused by C 20 is discussed and compared to the damage caused by Xe 55 . Energetics, structures, and dynamics of these systems are fully analyzed and characterized. copyright 1999 American Institute of Physics

A statistical analysis of the lateral displacement of Si atoms in molecular dynamics simulations of successive bombardment with 20-keV C{sub 60} projectiles

Energy Technology Data Exchange (ETDEWEB)

Krantzman, K.D., E-mail: krantzmank@cofc.edu [Department of Chemistry and Biochemistry, College of Charleston, Charleston, SC 29424 (United States); Cook, E.L. [Department of Chemistry and Biochemistry, College of Charleston, Charleston, SC 29424 (United States); Wucher, A. [Faculty of Physics, University of Duisburg-Essen, 47048 Duisburg (Germany); Garrison, B.J. [Department of Chemistry, The Pennsylvania State University, University Park, PA 16802 (United States)

2011-07-15

An important factor that determines the possible lateral resolution in sputter depth profiling experiments is ion induced lateral displacement of substrate atoms. Molecular dynamics (MD) simulations are performed to model the successive bombardment of Si with 20 keV C{sub 60} at normal incidence. A statistical analysis of the lateral displacement of atoms that originate from the topmost layer is presented and discussed. From these results, it is determined that the motion is isotropic and can be described mathematically by a simple diffusion equation. A 'diffusion coefficient' for lateral displacement is determined to be 3.5 A{sup 2}/impact. This value can be used to calculate the average lateral distance moved as a function of the number of impacts. The maximum distance an atom may move is limited by the time that it remains on the surface before it is sputtered. After 800 impacts, 99% of atoms from the topmost layer have been removed, and the average distance moved by these atoms is predicted to be 100 A. Although the behavior can be described mathematically by the diffusion equation, the behavior of the atoms is different than what is thought of as normal diffusion. Atoms are displaced a large distance due to infrequent large hops.

Irradiation effects on SiAlO(N) rare earth aluminosilicate glasses in the framework of actinides transmutation

International Nuclear Information System (INIS)

Dauce, R.

2003-11-01

Actinides transmutation would permit to decrease the amount of waste to be dispose in deep geological site. However, a surrounding matrix is generally necessary after the separation of the radionuclides. Reference ceramics irradiations in the context of transmutation have been widely investigated, but no study have been performed on amorphous materials in the same conditions. The extensive study of glass evolution under heavy-ions bombardment can however permit to get insight damaging mechanisms during irradiation. The glassy compositions, which are SiAlO(N) type, were chosen for their refractoriness, their high chemical durability and excellent mechanical properties. Five compositions, in the Y-Mg-Si-Al-O(-N), Nd-Mg-Si-Al-O(-N) and La-Y-Al-O-N systems, were synthesized and characterized. A link is find between the structure of glasses and their deformation mechanism. The glasses were irradiated at GANIL (Caen), with several MeV energy heavy-ions. Their hardness decrease after bombardment, in close link with the electronic stopping power, but seems to be independent of the amount and nature of the network modifiers. This hardness decrease is more pronounced in the case of nitrogen containing glasses, and is due to a change in the glass deformation mechanism under indentation. The pristine glasses exhibit a 'normal' behavior, but the irradiated glasses are strained mainly by a densification mechanism. This change in the indentation behavior is probably due to several structural modifications. Indeed, UV-visible absorption spectroscopy shows the presence of a large amount of point defects after bombardment. Furthermore, particularly in the case of nitrogen containing glasses, the local environment of aluminum and silicon are largely disturbed, as shown by NMR and Raman spectroscopies. (author)

Comparison between thermal annealing and ion mixing of multilayered Ni-W films on Si. II

International Nuclear Information System (INIS)

Pai, C.S.; Lau, S.S.; Poker, D.B.; Hung, L.S.

1985-01-01

The reactions between bilayered Ni/W films and Si substrates induced by thermal annealing and ion mixing were investigated and compared. Samples were prepared by electron-beam sequential deposition of Ni and W onto the Si substrates and following by either furnace annealing (approx. 200--900 0 C) or ion mixing (approx. 2 x 10 15 -- 4 x 10 16 86 Kr + ions/cm 2 ). The reactions were analyzed by Rutherford backscattering and x-ray diffraction (Read camera). Thermal annealing of both W/Ni/Si and Ni/W/Si samples led to the formation of Ni silicide next to the Si substrate and W silicide on the sample surface (layer reversal between Ni and W in the Ni/W/Si case). Ion mixing of W/Ni/Si samples led to the formation of Ni silicide with a thin layer of Ni-W-Si mixture located at the sample surface. For Ni/W/Si samples a ternary amorphous mixture of Ni-W-Si was obtained with ion mixing. These reactions were rationalized in terms of the mobilities of various atoms and the intermixings between layers

Precipitation in Ni-Si during electron and ion irradiation

Science.gov (United States)

Lucas, G. E.; Zama, T.; Ishino, S.

1986-11-01

This study was undertaken to further investigate how the nature of the irradiation condition affects precipitation in a dilute Ni-Si system. Transmission electron microscopy (TEM) discs of a solution annealed Ni alloy containing 5 at% Si were irradiated with 400 keV Ar + ions, 200 keV He + ions and 1 MeV electrons at average displacement rates in the range 2 × 10 -5dpa/s to 2 × 10 -3dpa/s at temperatures in the range 25°C to 450°C. Samples irradiated with electrons were observed in situ in an HVEM, while ion irradiated specimens were examined in a TEM after irradiation. Precipitation of Ni 3Si was detected by the appearance of superlattice spots in the electron diffraction patterns. It was found that as the mass of the irradiating species increased, the lower bound temperature at which Ni 3Si precipitation was first observed increased. For electron irradiation, the lower bound temperature at 2 × 10 -3dpa/s was ˜125°C, whereas for 400 keV Ar + irradiation at a similar average displacement rate the lower boundary was approximately 325°C. This suggests that cascade disordering competes with radiation induced solute segregation.

Precipitation in Ni-Si during electron and ion irradiation

International Nuclear Information System (INIS)

Lucas, G.E.; Zama, T.; Ishino, S.

1986-01-01

This study was undertaken to further investigate how the nature of the irradiation condition affects precipitation in a dilute Ni-Si system. Transmission electron microscopy (TEM) discs of a solution annealed Ni alloy containing 5 at% Si were irradiated with 400 keV Ar + ions, 200 keV He + ions and 1 MeV electrons at average displacement rates in the range 2x10 -5 dpa/s to 2x10 -3 dpa/s at temperatures in the range 25 0 C to 450 0 C. Samples irradiated with electrons were observed in situ in an HVEM, while ion irradiated specimens were examined in a TEM after irradiation. Precipitation of Ni 3 Si was detected by the appearance of superlattice spots in the electron diffraction patterns. It was found that as the mass of the irradiating species increased, the lower bound temperature at which Ni 3 Si precipitation was first observed increased. For electron irradiation, the lower bound temperature at 2x10 -3 dpa/s was ∝125 0 C, whereas for 400 keV Ar + irradiation at a similar average displacement rate the lower boundary was approximately 325 0 C. This suggests that cascade disordering competes with radiation induced solute segregation. (orig.)

High-energy ion-beam-induced phase separation in SiOx films

International Nuclear Information System (INIS)

Arnoldbik, W.M.; Tomozeiu, N.; Hattum, E.D. van; Lof, R.W.; Vredenberg, A.M.; Habraken, F.H.P.M.

2005-01-01

The modification of the nanostructure of silicon suboxide (SiO x ) films as a result of high-energy heavy-ion irradiation has been studied for the entire range 0.1≤x x films have been obtained by radio-frequency magnetron sputter deposition. For 50 MeV 63 Cu 8+ ions and an angle of incidence of 20 deg. with the plane of the surface, and for x≥0.5, it takes a fluence of about 10 14 /cm 2 to reach a Si-O-Si infrared absorption spectrum, which is supposed to be characteristic for a Si-SiO 2 composite film structure. For smaller x values, it takes a much larger fluence. The interpretation of the IR spectra is corroborated for the surface region by results from x-ray photoelectron spectroscopy. The results present evidence for a mechanism, in which the phase separation takes place in the thermal spike, initiated by the energy deposited in many overlapping independent ion tracks. Such a process is possible since the suboxides fulfill the conditions for spinodal decomposition

Removal of foreign atoms from a metal surface bombarded with fast atomic particles

Energy Technology Data Exchange (ETDEWEB)

Dolotov, S.K.; Evstigneev, S.A.; Luk' yanov, S.Yu.; Martynenko, Yu.V.; Chicherov, V.M.

1976-07-01

A metal surface coated with foreign atoms was irradiated with periodically repeating ion current pulses. The energy of the ions bombarding the target was 20 to 30 keV, and inert gas ions were used. A study of the time dependences of the current of the dislodged foreign atoms showed that the rate of their removal from the target surface is determined by the sputtering coefficient of the substrate metal.

Removal of foreign atoms from a metal surface bombarded with fast atomic particles

International Nuclear Information System (INIS)

Dolotov, S.K.; Evstigneev, S.A.; Luk'yanov, S.Yu.; Martynenko, Yu.V.; Chicherov, V.M.

A metal surface coated with foreign atoms was irradiated with periodically repeating ion current pulses. The energy of the ions bombarding the target was 20 to 30 keV, and inert gas ions were used. A study of the time dependences of the current of the dislodged foreign atoms showed that the rate of their removal from the target surface is determined by the sputtering coefficient of the substrate metal

The repetitive flaking of Inconel 625 by 100 keV helium bombardment

International Nuclear Information System (INIS)

Whitton, J.L.; Chen, H.M.; Littmark, U.

1981-01-01

Repetitive flaking of Inconel 625 occurs with ion bombardment doses of > than 10 18 100 keV helium ions cm -2 , with up to 39 exfoliations being observed after bombardment with 3 x 10 19 ions cm -2 . The thickness of the flakes, measured by scanning electron microscopy, is some 30% greater than when measured by Rutherford backscattering (RBS) of 1.8 MeV helium ions. These RBS measurements compare well with the thickness of the remaining layers in the resultant craters and to the most probable range of the 100 keV helium. The area of the flakes is dictated by the grain boundaries, and when one flake is ejected, the adjacent grains are prevented from doing so since there now exists an escape route for the injected helium. A strong dose rate dependence is observed; decreasing the beam current from 640 μA cm -2 to 64 μA cm -2 results in a factor 20 fewer flakes being exfoliated (for the same total dose of 3 x 10 19 ions cm -2 ). Successive flakes decrease in area, suggesting that eventually a cratered, but stable, surface will result with the only erosion being by the much less effective mechanism of sputtering. (orig.)

MeV-Si ion irradiation effects on the electrical properties of HfO2 thin films on Si

International Nuclear Information System (INIS)

Yu Xiangkun; Shao Lin; Chen, Q.Y.; Trombetta, L.; Wang Chunyu; Dharmaiahgari, Bhanu; Wang Xuemei; Chen Hui; Ma, K.B.; Liu Jiarui; Chu, W.-K.

2006-01-01

We studied the irradiation effect of 2-MeV Si ions on HfO 2 films deposited on Si substrates. HfO 2 films ∼11 nm thick were deposited onto Si substrates by chemical vapor deposition. The samples were then irradiated by 2-MeV Si ions at a fluence of 1 x 10 14 cm -2 at room temperature, followed by rapid thermal annealing at 1000 deg. C for 10 s. After annealing, a layer of aluminum was deposited on the samples as the gate electrode to form metal-oxide-semiconductor (MOS) capacitor structures. Rutherford backscattering spectrometry and electrical measurement of both capacitance and current as a function of voltage were used to characterize the samples before and after annealing. Non-insulating properties of the HfO 2 films deteriorated immediately after the ion irradiation, but rapid thermal annealing effectively repaired the irradiation damages, as reflected in improved capacitance versus voltage characteristics and significant reduction of leakage current in the MOS capacitors

Compositional changes during ion bombardment

International Nuclear Information System (INIS)

Rehn, L.E.

1988-09-01

Ion irradiation initiates several processes that can alter the composition of the target. This presentation provides an overview of our current understanding of these kinetics processes, which include implantation, sputtering, displacement mixing, radiation-enhanced diffusion, and radiation-induced segregation. The latter two effects can alter the target composition to depths that are substantially greater than the projected ion range. 45 refs., 8 figs

Surface wet-ability modification of thin PECVD silicon nitride layers by 40 keV argon ion treatments

Science.gov (United States)

Caridi, F.; Picciotto, A.; Vanzetti, L.; Iacob, E.; Scolaro, C.

2015-10-01

Measurements of wet-ability of liquid drops have been performed on a 30 nm silicon nitride (Si3N4) film deposited by a PECVD reactor on a silicon wafer and implanted by 40 keV argon ions at different doses. Surface treatments by using Ar ion beams have been employed to modify the wet-ability. The chemical composition of the first Si3N4 monolayer was investigated by means of X-ray Photoelectron Spectroscopy (XPS). The surface morphology was tested by Atomic Force Microscopy (AFM). Results put in evidence the best implantation conditions for silicon nitride to increase or to reduce the wet-ability of the biological liquid. This permits to improve the biocompatibility and functionality of Si3N4. In particular experimental results show that argon ion bombardment increases the contact angle, enhances the oxygen content and increases the surface roughness.

Ion emission in solids bombarded with Aun+ (n = 1 - 9) clusters accelerated within the 0.15 - 1.25 MeV energy range

International Nuclear Information System (INIS)

Wehbe, Nimer

2006-06-01

This experimental work is devoted to the study of the ion emission in solids at the impact of gold clusters of energies within 0.15 to 1.25 MeV range. The physics of ion-solid collisions and the theoretical models of sputtering of solids under ion bombardment are presented in the first chapter. The chapter no. 2 deals with the description of the experimental setup. The study of a gold target allowed to evidence the role of the size and energy of the clusters in determining the emission intensity and the mass distribution of the ions. The 4. chapter gives results from the study of cesium iodide in which the intense emission of CsI clusters could be investigated quantitatively due to multiplicity measurements. Finally, the chapter no. 5 was devoted to the study of a biologic molecule, the phenylalanine, and of a pesticide molecule, chlorosulfuron. This work evidenced the importance of clusters for surface analyses by mass spectrometry

Operation of low-energy ion implanters for Si, N, C ion implantation into silicon and glassy carbon

International Nuclear Information System (INIS)

Carder, D.A.; Markwitz, A.

2009-01-01

This report details the operation of the low-energy ion implanters at GNS Science for C, N and Si implantations. Two implanters are presented, from a description of the components through to instructions for operation. Historically the implanters have been identified with the labels 'industrial' and 'experimental'. However, the machines only differ significantly in the species of ions available for implantation and sample temperature during implantation. Both machines have been custom designed for research purposes, with a wide range of ion species available for ion implantation and the ability to implant two ions into the same sample at the same time from two different ion sources. A fast sample transfer capability and homogenous scanning profiles are featured in both cases. Samples up to 13 mm 2 can be implanted, with the ability to implant at temperatures down to liquid nitrogen temperatures. The implanters have been used to implant 28 Si + , 14 N + and 12 C + into silicon and glassy carbon substrates. Rutherford backscattering spectroscopy has been used to analyse the implanted material. From the data a Si 30 C 61 N 9 layer was measured extending from the surface to a depth of about 77 ± 2 nm for (100) silicon implanted with 12 C + and 14 N + at multiple energies. Silicon and nitrogen ion implantation into glassy carbon produced a Si (40.5 %), C (38 %), N (19.5 %) and O (2%) layer centred around a depth of 50 ± 2 nm from the surface. (author). 8 refs., 20 figs

Modelling of ion implantation in SiC crystals

Energy Technology Data Exchange (ETDEWEB)

Chakarov, Ivan [SILVACO International, 4701 Patrick Henry Drive, Building 2, Santa Clara, CA 95054 (United States)]. E-mail: ivan.chakarov@silvaco.com; Temkin, Misha [SILVACO International, 4701 Patrick Henry Drive, Building 2, Santa Clara, CA 95054 (United States)

2006-01-15

An advanced electronic stopping model for ion implantation in SiC has been implemented within the binary collision approximation. The model has been thoroughly tested and validated for Al implantation into 4H-, 6H-SiC under different initial implant conditions. A very good agreement between calculated and experimental profiles has been achieved. The model has been integrated in an industrial technology CAD process simulator.

Modelling of ion implantation in SiC crystals

International Nuclear Information System (INIS)

Chakarov, Ivan; Temkin, Misha

2006-01-01

An advanced electronic stopping model for ion implantation in SiC has been implemented within the binary collision approximation. The model has been thoroughly tested and validated for Al implantation into 4H-, 6H-SiC under different initial implant conditions. A very good agreement between calculated and experimental profiles has been achieved. The model has been integrated in an industrial technology CAD process simulator

Current Progress of Si/Graphene Nanocomposites for Lithium-Ion Batteries

Directory of Open Access Journals (Sweden)

Yinjie Cen

2018-03-01

Full Text Available The demand for high performance lithium-ion batteries (LIBs is increasing due to widespread use of portable devices and electric vehicles. Silicon (Si is one of the most attractive candidate anode materials for next generation LIBs. However, the high-volume change (>300% during lithium ion alloying/de-alloying leads to poor cycle life. When Si is used as the anode, conductive carbon is needed to provide the necessary conductivity. However, the traditional carbon coating method could not overcome the challenges of pulverization and unstable Solid Electrolyte Interphase (SEI layer during long-term cycling. Since 2010, Si/Graphene composites have been vigorously studied in hopes of providing a material with better cycling performance. This paper reviews current progress of Si/Graphene nanocomposites in LIBs. Different fabrication methods have been studied to synthesize Si/Graphene nanocomposites with promising electrochemical performances. Graphene plays a key enabling role in Si/Graphene anodes. However, the desired properties of graphene for this application have not been systematically studied and understood. Further systematic investigation of the desired graphene properties is suggested to better control the Si/Graphene anode performance.

Fast atom bombardment mass spectrometry of condensed tannin sulfonate derivatives

Science.gov (United States)

J.J. Karchesy; L.Y. Foo; Richard W. Hemingway; E. Barofsky; D.F. Barofsky

1989-01-01

Condensed tannin sulfonate derivatives were studied by fast atom bombardment mass spectrometry (FAB-MS) to assess the feasibility of using this technique for determining molecular weight and structural information about these compounds. Both positive- and negative-ion spectra provided useful data with regard to molecular weight, cation species present, and presence of...

Ion beam effects on the surface and near-surface composition of TaSi sub 2

Energy Technology Data Exchange (ETDEWEB)

Valeri, S.; Di Bona, A.; Ottaviani, G. (Dipt. di Fisica, Univ. di Modena (Italy)); Procop, M. (Zentralinstitut fuer Elektronenphysik, Berlin (Germany))

1991-07-01

Low-energy (0.7-4.5 keV) ion bombardment effects on polycrystalline TaSi{sub 2} at sputter steady state and in various intermediate steps have been investigated, in the temperature range up to 550degC, to determine the time and temperature dependence of the altered layer formation. This in turn enables a better knowledge of the synergistic effects of the processes mentioned above. At low temperatures (T{<=}410degC) the surface is silicon depleted, and the depletion is even more severe in the subsurface region up to a depth of several tens of angstroems; silicon preferential sputtering and radiation-enhanced segregation assisted by the displacement mixing-induced motion of atoms are assumed to be responsible for this composition profile, while thermally activated diffusion processes become operative above 410degC, reducing progressively the concentration gradient between the surface and the subsurface zone. The composition at different depths has been determined from Auger peaks for different kinetic energies, by varying the take-off angle and finally by sputter profiling at low in energy the high energy processed surfaces. Quantitative analysis has been performed by XPS and AES by using the elemental standard method. (orig.).

Uranium targets sandwiched between carbon layers for use on target wheels and on a Wobbler in heavy-ion bombardments

International Nuclear Information System (INIS)

Folger, H.; Hartmann, W.; Klemm, J.; Thalheimer, W.

1989-01-01

Uranium layers of ≅ 0.4 mg/cm 2 are evaporated by means of a 6 kW electron-beam gun onto 0.04 mg/cm 2 thick carbon films in a high-vacuum process; a protecting layer of ≅ 0.01 mg/cm 2 of carbon is added in the same vacuum cycle. The evaporation- and deposition yields are discussed and measurements of target characteristics are described. C/U/C sandwich targets in the shape of a sector of an annulus are prepared for use on rotating target wheels of 155 mm radius to be bombarded with a pulsed beam of heavy ions. One type of circular targets of 20 mm in diameter is mounted to a target wobbler. Both, wheel and wobbler, distribute the intensity of the heavy-ion beam to a larger area to reduce radiation damages. Examples of target applications will be mentioned. (orig.)

Results on positron diffusion in Si