WorldWideScience

Sample records for sequential ion-beam sputtering

  1. Ion beam sputter implantation method

    International Nuclear Information System (INIS)

    King, W.J.

    1978-01-01

    By means of ion beam atomizing or sputtering an integrally composed coating, the composition of which continuously changes from 100% of the substrate to 100% of the coating, can be surfaced on a substrate (e.g. molten quartz on plastic lenses). In order to do this in the facility there is directed a primary beam of accelerated noble gas ions on a target from the group of the following materials: SiO 2 , Al 2 O 3 , Corning Glass 7070, Corning Glass 7740 or borosilicate glass. The particles leaving the target are directed on the substrate by means of an acceleration potential of up to 10 KV. There may, however, be coated also metal layers (Ni, Co) on a mylar film resulting in a semireflecting metal film. (RW) [de

  2. Ion beam sputter coatings for laser technology

    Science.gov (United States)

    Ristau, Detlev; Gross, Tobias

    2005-09-01

    The initial motivation for the development of Ion Beam Sputtering (IBS) processes was the need for optical coatings with extremely low optical scatter losses for laser gyros. Especially, backscattering of the gyro-mirrors couples the directional modes in the ring resonator leading to the lock in effect which limits the sensitivity of the gyro. Accordingly, the first patent on IBS was approved for an aircraft company (Litton) in 1978. In the course of the rapid development of the IBS-concept during the last two decades, an extremely high optical quality could be achieved for laser coatings in the VIS- and NIR-spectral region. For example, high reflecting coatings with total optical losses below 1 ppm were demonstrated for specific precision measurement applications with the Nd:YAG-laser operating at 1.064 μm. Even though the high quality level of IBS-coatings had been confirmed in many applications, the process has not found its way into the production environment of most optical companies. Major restrictions are the relatively low rate of the deposition process and the poor lateral homogeneity of the coatings, which are related to the output characteristics of the currently available ion sources. In the present contribution, the basic principles of IBS will be discussed in the context of the demands of modern laser technology. Besides selected examples for special applications of IBS, aspects will be presented for approaches towards rapid manufacturing of coatings and the production of rugate filters on the basis of IBS-techniques.

  3. Preliminary results on adhesion improvement using Ion Beam Sputtering Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Yonggi; Kim, Bomsok; Lee, Jaesang [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2013-05-15

    Sputtering is an established technique for depositing films with smooth surfaces and interfaces and good thick control. Ejection of articles from a condensed matter due to impingement of high energy particles, termed as sputtering was observed as early as in 1852, however, it is only recently that the complex process of sputtering system. Coating adhesion and environmental stability of the ion beam sputtering deposition coatings performed very well. High-energy high-current ion beam thin film synthesis of adhesion problems can be solved by using. Enhancement of adhesion in thin film synthesis, using high energy and high current ion beam, of mobile phones, car parts and other possible applications in the related industry Alternative technology of wet chrome plating, considering environment and unit cost, for car parts and esthetic improvement on surface of domestic appliances.

  4. Preliminary results on adhesion improvement using Ion Beam Sputtering Deposition

    International Nuclear Information System (INIS)

    Kim, Yonggi; Kim, Bomsok; Lee, Jaesang

    2013-01-01

    Sputtering is an established technique for depositing films with smooth surfaces and interfaces and good thick control. Ejection of articles from a condensed matter due to impingement of high energy particles, termed as sputtering was observed as early as in 1852, however, it is only recently that the complex process of sputtering system. Coating adhesion and environmental stability of the ion beam sputtering deposition coatings performed very well. High-energy high-current ion beam thin film synthesis of adhesion problems can be solved by using. Enhancement of adhesion in thin film synthesis, using high energy and high current ion beam, of mobile phones, car parts and other possible applications in the related industry Alternative technology of wet chrome plating, considering environment and unit cost, for car parts and esthetic improvement on surface of domestic appliances

  5. Development of ion beam sputtering techniques for actinide target preparation

    International Nuclear Information System (INIS)

    Aaron, W.S.; Zevenbergen, L.A.; Adair, H.L.

    1985-01-01

    Ion beam sputtering is a routine method for the preparation of thin films used as targets because it allows the use of minimum quantity of starting material, and losses are much lower than most other vacuum deposition techniques. Work is underway in the Isotope Research Materials Laboratory (IRML) at ORNL to develop the techniques that will make the preparation of actinide targets up to 100 μg/cm 2 by ion beam sputtering a routinely available service from IRML. The preparation of the actinide material in a form suitable for sputtering is a key to this technique, as is designing a sputtering system that allows the flexibility required for custom-ordered target production. At present, development work is being conducted on low-activity in a bench-top system. The system will then be installed in a hood or glove box approved for radioactive materials handling where processing of radium, actinium, and plutonium isotopes among others will be performed. (orig.)

  6. Towards a magnetic field separation in Ion Beam Sputtering processes

    Energy Technology Data Exchange (ETDEWEB)

    Malobabic, Sina, E-mail: s.malobabic@lzh.de [Laser Zentrum Hannover e.V., Hollerithallee 8, 30419 Hannover (Germany); Quest: Centre of Quantum Engineering and Space-Time Research, Leibniz Universität Hannover (Germany); Jupé, Marco [Laser Zentrum Hannover e.V., Hollerithallee 8, 30419 Hannover (Germany); Quest: Centre of Quantum Engineering and Space-Time Research, Leibniz Universität Hannover (Germany); Kadhkoda, Puja [Laser Zentrum Hannover e.V., Hollerithallee 8, 30419 Hannover (Germany); Ristau, Detlev [Laser Zentrum Hannover e.V., Hollerithallee 8, 30419 Hannover (Germany); Quest: Centre of Quantum Engineering and Space-Time Research, Leibniz Universität Hannover (Germany)

    2015-10-01

    Defects embedded in coatings due to particle contamination are considered as a primary factor limiting the quality of optical coatings in Ion Beam Sputtering. An approach combining the conventional Ion Beam Sputtering process with a magnetic separator in order to remove these particles from film growth is presented. The separator provides a bent axial magnetic field that guides the material flux towards the substrate positioned at the exit of the separator. Since there is no line of sight between target and substrate, the separator prevents that the particles generated in the target area can reach the substrate. In this context, optical components were manufactured that reveal a particle density three times lower than optical components which were deposited using a conventional Ion Beam Sputtering process. - Highlights: • We use bent magnetic fields to guide and separate the sputtered deposition material. • No line of sight between substrate and target prevents thin films from particles. • The transport efficiency of binary and ternary oxides is investigated. • The defect statistics of manufactured dielectric ternary multilayers are evaluated. • The phase separation leads to a drastically reduction of particle contamination.

  7. Nanopatterning of swinging substrates by ion-beam sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Sun Mi; Kim, J.-S., E-mail: jskim@sm.ac.kr [Department of Physics, Sookmyung Women' s University, Seoul 140-742 (Korea, Republic of)

    2016-05-28

    Graphite substrates are azimuthally swung during ion-beam sputtering (IBS) at a polar angle θ = 78° from the surface normal. The swinging of the substrate not only causes quasi-two-dimensional mass transport but also makes various sputter effects from the different incident angles to work together. Through variation of the swing angle, both the transport and sputtering effects synergistically produce a series of salient patterns, such as asymmetric wall-like structures, which can grow to several tens of nanometers and exhibit a re-entrant orientational change with the increased swing angle. Thus, the present work demonstrates that dynamic variables such as the swing angle, which have been little utilized, offer an additional parameter space that can be exploited to diversify the sputtered patterns, thereby expanding the applicability of an IBS as well as the comprehension of the IBS nano patterning mechanism.

  8. Nanopatterning of swinging substrates by ion-beam sputtering

    International Nuclear Information System (INIS)

    Yoon, Sun Mi; Kim, J.-S.

    2016-01-01

    Graphite substrates are azimuthally swung during ion-beam sputtering (IBS) at a polar angle θ = 78° from the surface normal. The swinging of the substrate not only causes quasi-two-dimensional mass transport but also makes various sputter effects from the different incident angles to work together. Through variation of the swing angle, both the transport and sputtering effects synergistically produce a series of salient patterns, such as asymmetric wall-like structures, which can grow to several tens of nanometers and exhibit a re-entrant orientational change with the increased swing angle. Thus, the present work demonstrates that dynamic variables such as the swing angle, which have been little utilized, offer an additional parameter space that can be exploited to diversify the sputtered patterns, thereby expanding the applicability of an IBS as well as the comprehension of the IBS nano patterning mechanism.

  9. Influence of ion beam and geometrical parameters on properties of Si thin films grown by Ar ion beam sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Bundesmann, Carsten; Feder, Rene; Neumann, Horst [Leibniz-Institut fuer Oberflaechenmodifizierung e.V., Leipzig (Germany)

    2012-07-01

    Ion beam sputtering (IBS) offers, in contrast to other physical vapour deposition techniques, such as magnetron sputtering or electron beam evaporation, the opportunity to change the properties of the layer forming particles (sputtered and scattered particles) by varying ion beam parameters (ion species, ion energy) and geometrical parameters (ion incidence angle, emission angle). Consequently, these effects can be utilized to tailor thin film properties [1]. The goal is to study systematically the correlations between the primary and secondary parameters and, at last, the effects on the properties of Si thin films, such as optical properties, stress, surface topography and composition. First experimental results are presented for Ar-ion sputtering of Si.

  10. Development of ion beam sputtering techniques for actinide target preparation

    Science.gov (United States)

    Aaron, W. S.; Zevenbergen, L. A.; Adair, H. L.

    1985-06-01

    Ion beam sputtering is a routine method for the preparation of thin films used as targets because it allows the use of a minimum quantity of starting material, and losses are much lower than most other vacuum deposition techniques. Work is underway in the Isotope Research Materials Laboratory (IRML) at ORNL to develop the techniques that will make the preparation of actinide targets up to 100 μg/cm 2 by ion beam sputtering a routinely available service from IRML. The preparation of the actinide material in a form suitable for sputtering is a key to this technique, as is designing a sputtering system that allows the flexibility required for custom-ordered target production. At present, development work is being conducted on low-activity actinides in a bench-top system. The system will then be installed in a hood or glove box approved for radioactive materials handling where processing of radium, actinium, and plutonium isotopes among others will be performed.

  11. Pattern evolution during ion beam sputtering; reductionistic view

    Energy Technology Data Exchange (ETDEWEB)

    Kim, J.-H.; Kim, J.-S., E-mail: jskim@sm.ac.kr

    2016-09-15

    The development of the ripple pattern during the ion beam sputtering (IBS) is expounded via the evolution of its constituent ripples. For that purpose, we perform numerical simulation of the ripple evolution that is based on Bradley–Harper model and its non-linear extension. The ripples are found to evolve via various well-defined processes such as ripening, averaging, bifurcation and their combinations, depending on their neighboring ripples. Those information on the growth kinetics of each ripple allow the detailed description of the pattern development in real space that the instability argument and the diffraction study both made in k-space cannot provide.

  12. Superconducting oxide thin films by ion beam sputtering

    International Nuclear Information System (INIS)

    Kobrin, P.H.; DeNatale, J.F.; Housley, R.M.; Flintoff, J.F.; Harker, A.B.

    1987-01-01

    Superconducting thin films of ternary copper oxides from the Y-Ba-Cu-O and La-Sr-Cu-O systems have been deposited by ion beam sputtering of ceramic targets. Crystallographic orientation of the polycrystalline films has been shown to vary with substrate identity, deposition temperature and annealing temperature. The onset of the superconductive transition occurs near 90K in the Y-Ba-Cu-O system. Fe impurities of < 0.2% have been found to inhibit the superconducting transition, probably by migrating to the grain boundaries

  13. Nanofabrication by ion-beam sputtering fundamentals and applications

    CERN Document Server

    Som, Tapobrata

    2012-01-01

    Considerable attention has been paid to ion beam sputtering as an effective way to fabricate self-organized nano-patterns on various substrates. The significance of this method for patterning surfaces is that the technique is fast, simple, and less expensive. The possibility to create patterns on very large areas at once makes it even more attractive. This book reviews various fascinating results, understand the underlying physics of ion induced pattern formation, to highlight the potential applications of the patterned surfaces, and to explore the patterning behavior by different irradiation

  14. Development of ion beam sputtering technology for mold and die

    International Nuclear Information System (INIS)

    Lee, Jaehyung; Park, J.; Lee, J.; Jil, J.; Yang, D.; Noh, Y.; You, B.; You, J.

    2003-06-01

    Ion beam sputtering technique, one of the surface modification techniques, is to reduce surface roughness of materials with selective detaching atoms and micro particles from the surface by bombarding energetic ions of a few to a few tens keV onto the materials surfaces. This technique can be applied for the surfaces that need to have sub micrometer surface roughness, and it has already been used by companies and/or Institute over the world. Although this is relatively high cost process, it has been widely demanded in the industries with developing the eco-friend equipment due to its high quality of products. In the domestic industry, it has been pointed out that the mechanical polishing technique for molds and dies is relatively expensive and does not produce the required surface roughness. Therefore, in this R and D, techniques obtained from the ion source and the ion beam irradiation techniques developed for the proton accelerator has been applied to polish the surface of molds and dies to solve the above-mentioned problems that take place during mechanical polishing. In case that ion beam polishing technique is used, we expect not only producing the high quality polished surfaces but also producing the economically valuable end-products. In this R and D project, we are aiming at establishing ion beam techniques for industrialization as well as mass production of low cost products with developing the economical instrumentation techniques. Also, as a result of this R and D it is expected that importing of precise molds and dies may be reduced and technical competitiveness will be enhanced

  15. Ion beam and dual ion beam sputter deposition of tantalum oxide films

    Science.gov (United States)

    Cevro, Mirza; Carter, George

    1994-11-01

    Ion beam sputter deposition (IBS) and dual ion beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. Optical properties ie refractive index and extinction coefficient of IBS films were determined in the 250 - 1100 nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n equals 2.06 at (lambda) equals 550 nm. Films deposited using DIBS ie deposition assisted by low energy Ar and O2 ions (Ea equals 0 - 300 eV) and low current density (Ji equals 0 - 40 (mu) A/cm2) showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy while composition of the film and contaminants were determined by Rutherford scattering spectroscopy. Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target while assisted deposition slightly increased the Ar content. Stress in the IBS deposited films was measured by the bending technique. IBS deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals 35 (mu) A/cm2. All

  16. Ion-beam and dual-ion-beam sputter deposition of tantalum oxide films

    Science.gov (United States)

    Cevro, Mirza; Carter, George

    1995-02-01

    Ion-beam sputter deposition (IBS) and dual-ion-beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. The optical properties, i.e., refractive index and extinction coefficient, of IBS films were determined in the 250- to 1100-nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n 2.06 at (lambda) equals 550 nm. Films deposited using DIBS, i.e., deposition assisted by low energy Ar and O2 ions (Ea equals 0 to 300 eV) and low current density (Ji equals 0 to 40 (mu) A/cm2), showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy, whereas composition of the film and contaminants were determined by Rutherford backscattering spectroscopy (RBS). Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target whereas assisted deposition slightly increased the Ar content. Stress in the IBS-deposited films was measured by the bending technique. IBS-deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals

  17. Studies on ion scattering and sputtering processes relevant to ion beam sputter deposition of multicomponent thin films

    International Nuclear Information System (INIS)

    Auciello, O.; Ameen, M.S.; Kingon, A.I.

    1989-01-01

    Results from computer simulation and experiments on ion scattering and sputtering processes in ion beam sputter deposition of high Tc superconducting and ferroelectric thin films are presented. It is demonstrated that scattering of neutralized ions from the targets can result in undesirable erosion of, and inert gas incorporation in, the growing films, depending on the ion/target atom ass ratio and ion beam angle of incidence/target/substrate geometry. The studies indicate that sputtering Kr + or Xe + ions is preferable to the most commonly used Ar + ions, since the undesirable phenomena mentioned above are minimized for the first two ions. These results are used to determine optimum sputter deposition geometry and ion beam parameters for growing multicomponent oxide thin films by ion beam sputter-deposition. 10 refs., 5 figs

  18. Simulating discrete models of pattern formation by ion beam sputtering

    International Nuclear Information System (INIS)

    Hartmann, Alexander K; Kree, Reiner; Yasseri, Taha

    2009-01-01

    A class of simple, (2+1)-dimensional, discrete models is reviewed, which allow us to study the evolution of surface patterns on solid substrates during ion beam sputtering (IBS). The models are based on the same assumptions about the erosion process as the existing continuum theories. Several distinct physical mechanisms of surface diffusion are added, which allow us to study the interplay of erosion-driven and diffusion-driven pattern formation. We present results from our own work on evolution scenarios of ripple patterns, especially for longer timescales, where nonlinear effects become important. Furthermore we review kinetic phase diagrams, both with and without sample rotation, which depict the systematic dependence of surface patterns on the shape of energy depositing collision cascades after ion impact. Finally, we discuss some results from more recent work on surface diffusion with Ehrlich-Schwoebel barriers as the driving force for pattern formation during IBS and on Monte Carlo simulations of IBS with codeposition of surfactant atoms.

  19. Study on the Deposition Rate Depending on Substrate Position by Using Ion Beam Sputtering Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Yonggi; Kim, Bomsok; Lee, Jaesang [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2014-05-15

    Ion beams have been used for over thirty years to modify materials in manufacturing of integrated circuits, and improving the corrosion properties of surfaces. Recently, the requirements for ion beam processes are becoming especially challenging in the following areas : ultra shallow junction formation for LSI fabrication, low damage high rate ion beam sputtering and smoothing, high quality functional surface treatment for electrical and optical properties. Ion beam sputtering is an attractive technology for the deposition of thin film coatings onto a broad variety of polymer, Si-wafer, lightweight substrates. Demand for the decoration metal is increasing. In addition, lightweight of parts is important, because of energy issues in the industries. Although a lot of researches have been done with conventional PVD methods for the deposition of metal or ceramic films on the surface of the polymer, there are still adhesion problems.

  20. Surfactant Sputtering: Theory of a new method of surface nanostructuring by ion beams

    International Nuclear Information System (INIS)

    Kree, R.; Yasseri, T.; Hartmann, A.K.

    2009-01-01

    We present a new Monte Carlo model and a new continuum theory of surface pattern formation due to 'surfactant sputtering', i.e. erosion by ion beam sputtering including a submonolayer coverage of additional, co-sputtered surfactant atoms. This setup, which has been realized in recent experiments in a controlled way leads to a number of interesting possibilities to modify pattern forming processing conditions. We will present three simple scenarios, which illustrate some potential applications of the method. In all three cases, simple Bradley-Harper type ripples appear in the absence of surfactant, whereas new, interesting structures emerge during surfactant sputtering.

  1. Orientation-dependent ion beam sputtering at normal incidence conditions in FeSiAl alloy

    International Nuclear Information System (INIS)

    Batic, Barbara Setina; Jenko, Monika

    2010-01-01

    The authors have performed Ar+ broad ion beam sputtering of a polycrystalline Fe-Si-Al alloy at normal incidence at energies varying from 6 to 10 keV. Sputtering results in the formation of etch pits, which can be classified in three shapes: triangular, rectangular, and square. As each grain of individual orientation exhibits a certain type of pattern, the etch pits were correlated with the crystal orientations by electron backscattered diffraction technique.

  2. Characterization of copper thin films prepared by metal self-ion beam sputter deposition

    International Nuclear Information System (INIS)

    Gotoh, Yasuhito; Amioka, Takao; Tsuji, Hiroshi; Ishikawa, Junzo

    1994-01-01

    New deposition technique, 'metal-ion beam self-sputtering' method has been developed. Using metal ions which is the same element with the target material, no contamination with noble gas atoms, which are often used in the conventional sputtering, will occur. In this paper, fundamental measurement of the film purity is reported. As a result of PIXE measurements, it was clarified that only slight amount of iron is incorporated in the films. (author)

  3. Sputtering of silicon and glass substrates with polyatomic molecular ion beams generated from ionic liquids

    Energy Technology Data Exchange (ETDEWEB)

    Takeuchi, Mitsuaki, E-mail: m-takeuchi@kuee.kyoto-u.ac.jp; Hoshide, Yuki; Ryuto, Hiromichi; Takaoka, Gikan H. [Photonics and Electronics Science and Engineering Center, Kyoto University, Kyotodaigaku-Katsura, Nishikyo-ku, Kyoto 615-8510 (Japan)

    2016-03-15

    The effect of irradiating 1-ethyl-3-methylimidazolium positive (EMIM{sup +}) or dicyanamide negative (DCA{sup –}) ion beams using an ionic liquid ion source was characterized concerning its sputtering properties for single crystalline Si(100) and nonalkaline borosilicate glass substrates. The irradiation of the DCA{sup –} ion beam onto the Si substrate at an acceleration voltage of 4 and 6 kV exhibited detectable sputtered depths greater than a couple of nanometers with an ion fluence of only 1 × 10{sup 15} ions/cm{sup 2}, while the EMIM{sup +} ion beam produced the same depths with an ion fluence 5 × 10{sup 15} ions/cm{sup 2}. The irradiation of a 4 kV DCA{sup –} ion beam at a fluence of 1 × 10{sup 16} ions/cm{sup 2} also yields large etching depths in Si substrates, corresponding to a sputtering yield of Si/DCA{sup – }= 10, and exhibits a smoothed surface roughness of 0.05 nm. The interaction between DCA{sup –} and Si likely causes a chemical reaction that relates to the high sputtering yield and forms an amorphous C-N capping layer that results in the smooth surface. Moreover, sputtering damage by the DCA{sup –} irradiation, which was estimated by Rutherford backscattering spectroscopy with the channeling technique, was minimal compared to Ar{sup +} irradiation at the same condition. In contrast, the glass substrates exhibited no apparent change in surface roughnesses when sputtered by the DCA{sup –} irradiation compared to the unirradiated glass substrates.

  4. Improving depth resolutions in positron beam spectroscopy by concurrent ion-beam sputtering

    Science.gov (United States)

    John, Marco; Dalla, Ayham; Ibrahim, Alaa M.; Anwand, Wolfgang; Wagner, Andreas; Böttger, Roman; Krause-Rehberg, Reinhard

    2018-05-01

    The depth resolution of mono-energetic positron annihilation spectroscopy using a positron beam is shown to improve by concurrently removing the sample surface layer during positron beam spectroscopy. During ion-beam sputtering with argon ions, Doppler-broadening spectroscopy is performed with energies ranging from 3 keV to 5 keV allowing for high-resolution defect studies just below the sputtered surface. With this technique, significantly improved depth resolutions could be obtained even at larger depths when compared to standard positron beam experiments which suffer from extended positron implantation profiles at higher positron energies. Our results show that it is possible to investigate layered structures with a thickness of about 4 microns with significantly improved depth resolution. We demonstrated that a purposely generated ion-beam induced defect profile in a silicon sample could be resolved employing the new technique. A depth resolution of less than 100 nm could be reached.

  5. Multilayered nanostructured coverings generated by a method of ion beam sputtering in vacuum

    International Nuclear Information System (INIS)

    Il'yushenko, A.F.; Andreev, M.A.; Markova, L.V.; Lisovskaya, Yu. O.

    2013-01-01

    Technological process of the formation of multilayered coverings by ion -beam sputtering is developed. At research of samples by method of AFM it is established, that the heating of a substrate leads to formation of rather large grains up to 100 nanometers in size, consisting of dispersed subgrains in the size 10-25 nanometers. The obtained results allow to say that in the course of formation of coverings interphase borders of section in one layer and section border between coat layers are formed. The use of a method of Electron Backscatter Diffraction Analysis (EBSD) has helped to confirm that the at ion-beam sputtering, ultrafine diamonds remain their diamond-like structure when migrating to the surface of the coating. It is found that with increasing number of monolayers coating microhardness increases. However, this relationship is described by a nonlinear and exponential model. (authors)

  6. Lead-silicate glass surface sputtered by an argon cluster ion beam investigated by XPS

    Czech Academy of Sciences Publication Activity Database

    Zemek, Josef; Jiříček, Petr; Houdková, Jana; Jurek, Karel; Gedeon, O.

    2017-01-01

    Roč. 469, Aug (2017), s. 1-6 ISSN 0022-3093 R&D Projects: GA MŠk LM2015088; GA ČR(CZ) GA15-12580S Institutional support: RVO:68378271 Keywords : lead-silicate glass * XPS * BO * NBO * Argon duster ion beam sputtering * X-ray irradiation Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 2.124, year: 2016

  7. Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

    Czech Academy of Sciences Publication Activity Database

    Horák, Pavel; Bejšovec, Václav; Vacík, Jiří; Lavrentiev, Vasyl; Vrňata, M.; Kormunda, M.; Daniš, S.

    2016-01-01

    Roč. 389, DEC (2016), s. 751-759 ISSN 0169-4332 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk(CZ) LM2011019 Institutional support: RVO:61389005 Keywords : Copper oxide * ion beam sputtering * Van der Pauw * nuclear reaction analysis * gas sensing Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.387, year: 2016

  8. Systematic investigations of low energy Ar ion beam sputtering of Si and Ag

    Energy Technology Data Exchange (ETDEWEB)

    Feder, R., E-mail: rene.feder@iom-leipzig.de [Leibniz-Institut für Oberflächenmodifizierung, Permoserstraße 15, 04318 Leipzig (Germany); Frost, F.; Neumann, H.; Bundesmann, C.; Rauschenbach, B. [Leibniz-Institut für Oberflächenmodifizierung, Permoserstraße 15, 04318 Leipzig (Germany)

    2013-12-15

    Ion beam sputter deposition (IBD) delivers some intrinsic features influencing the growing film properties, because ion properties and geometrical process conditions generate different energy and spatial distributions of the sputtered and scattered particles. Even though IBD has been used for decades, the full capabilities are not investigated systematically and specifically used yet. Therefore, a systematic and comprehensive analysis of the correlation between the properties of the ion beam, the generated secondary particles and backscattered ions and the deposited films needs to be done. A vacuum deposition chamber has been set up which allows ion beam sputtering of different targets under variation of geometrical parameters (ion incidence angle, position of substrates and analytics in respect to the target) and of ion beam parameters (ion species, ion energy) to perform a systematic and comprehensive analysis of the correlation between the properties of the ion beam, the properties of the sputtered and scattered particles, and the properties of the deposited films. A set of samples was prepared and characterized with respect to selected film properties, such as thickness and surface topography. The experiments indicate a systematic influence of the deposition parameters on the film properties as hypothesized before. Because of this influence, the energy distribution of secondary particles was measured using an energy-selective mass spectrometer. Among others, experiments revealed a high-energetic maximum for backscattered primary ions, which shifts with increasing emission angle to higher energies. Experimental data are compared with Monte Carlo simulations done with the well-known Transport and Range of Ions in Matter, Sputtering version (TRIM.SP) code [J.P. Biersack, W. Eckstein, Appl. Phys. A: Mater. Sci. Process. 34 (1984) 73]. The thicknesses of the films are in good agreement with those calculated from simulated particle fluxes. For the positions of the

  9. Effect of argon ion beam voltages on the microstructure of aluminum nitride films prepared at room temperature by a dual ion beam sputtering system

    International Nuclear Information System (INIS)

    Chen, H.-Y.; Han Sheng; Cheng, C.-H.; Shih, H.C.

    2004-01-01

    Aluminum nitride (AlN) films were successfully deposited at room temperature onto p-type (1 0 0) silicon wafers by manipulating argon ion beam voltages in a dual ion beam sputtering (DIBS). X-ray diffraction spectra showed that aluminum nitride films could be synthesized above 800 V. The (0 0 2) orientation was dominant at 800 V, above which the orientation was random. The atomic force microscope (AFM) images displayed a relatively smooth surface with the root-mean-square roughness of 2-3 nm, where this roughness decreased with argon ion beam voltage. The Al 2p 3/2 and N 1s spectra indicated that both the aluminum-aluminum bond and aluminum-nitrogen bond appeared at 600 V, above which only the aluminum-nitrogen bond was detected. Moreover, the atomic concentration in aluminum nitride films was concentrated in aluminum-rich phases in all cases. Nevertheless, the aluminum concentration markedly increased with argon ion beam voltages below 1000 V, above which the concentration decreased slightly. The correlation between the microstructure of aluminum nitride films and argon ion beam voltages is also discussed

  10. Growth and surface morphology of ion-beam sputtered Ti-Ni thin films

    International Nuclear Information System (INIS)

    Rao, Ambati Pulla; Sunandana, C.S.

    2008-01-01

    Titanium-nickel thin films have been deposited on float glass substrates by ion beam sputtering in 100% pure argon atmosphere. Sputtering is predominant at energy region of incident ions, 1000 eV to 100 keV. The as-deposited films were investigated by X-ray photoelectron spectroscopy (XPS) and atomic force microscope (AFM). In this paper we attempted to study the surface morphology and elemental composition through AFM and XPS, respectively. Core level as well as valence band spectra of ion-beam sputtered Ti-Ni thin films at various Ar gas rates (5, 7 and 12 sccm) show that the thin film deposited at 3 sccm possess two distinct peaks at binding energies 458.55 eV and 464.36 eV mainly due to TiO 2 . Upon increasing Ar rate oxidation of Ti-Ni is reduced and the Ti-2p peaks begin approaching those of pure elemental Ti. Here Ti-2p peaks are observed at binding energy positions of 454.7 eV and 460.5 eV. AFM results show that the average grain size and roughness decrease, upon increasing Ar gas rate, from 2.90 μm to 0.096 μm and from 16.285 nm to 1.169 nm, respectively

  11. Differential ion beam sputtering of segregated phases in aluminum casting alloys

    International Nuclear Information System (INIS)

    Nguyen, Chuong L.; Wirtz, Tom; Fleming, Yves; Metson, James B.

    2013-01-01

    Highlights: ► Novel combination of SIMS and SPM for accurate 3D chemical mapping. ► Different removal rates of metallurgical phases by ion beam. ► Faster oxidation rate of silicon vs. aluminum at room temperature in vacuum. - Abstract: Differential sputtering of materials is an important phenomenon in materials science with many implications. One of the practical applications of this phenomenon is the modification of the interface between a substrate and coating during sputter coating of materials. Aluminum casting alloys, as common materials in many applications, are suitable candidates to investigate this phenomenon due to their phase separated microstructures. Changes at the sample surface under ion bombardment can be characterized by a range of complimentary techniques. The novel SIMS–SPM instrument used here enables a thorough investigation into the evolution of topography and composition caused by ion beam sputtering. For the alloy examined in this work, the aluminum regions are removed faster than the silicon particles. The faster oxidation rate of silicon compared to aluminum in the exposed surface can also be deduced from this study.

  12. Stoichiometry of Silicon Dioxide Films Obtained by Ion-Beam Sputtering

    Science.gov (United States)

    Telesh, E. V.; Dostanko, A. P.; Gurevich, O. V.

    2018-03-01

    The composition of SiOx films produced by ion-beam sputtering (IBS) of silicon and quartz targets were studied by infrared spectrometry. Films with thicknesses of 150-390 nm were formed on silicon substrates. It was found that increase in the partial pressure of oxygen in the working gas, increase in the temperature of the substrate, and the presence of a positive potential on the target during reactive IBS of silicon shifted the main absorption band νas into the high-frequency region and increased the composition index from 1.41 to 1.85. During IBS of a quartz target the stoichiometry of the films deteriorates with increase of the energy of the sputtering argon ions. This may be due to increase of the deposition rate. Increase in the current of the thermionic compensator, increase of the substrate temperature, and addition of oxygen led to the formation of SiOx films with improved stoichiometry.

  13. Ion beam sputtered aluminum based multilayer mirrors for extreme ultraviolet solar imaging

    Energy Technology Data Exchange (ETDEWEB)

    Ziani, A. [Laboratoire Charles Fabry, Institut d' Optique, CNRS, Univ Paris Sud, 2 Avenue Augustin Fresnel, 91127 Palaiseau cedex France (France); Centre National d’Etudes Spatiales (CNES), 18 Avenue E. Belin, 31401 Toulouse (France); Delmotte, F., E-mail: Franck.Delmotte@InstitutOptique.fr [Laboratoire Charles Fabry, Institut d' Optique, CNRS, Univ Paris Sud, 2 Avenue Augustin Fresnel, 91127 Palaiseau cedex France (France); Le Paven-Thivet, C. [Institut d' Electronique et de Télécommunications de Rennes (IETR) UMR-CNRS 6164, Université de Rennes 1, UEB, IUT Saint Brieuc, 18 rue Henri Wallon, 22004 Saint Brieuc cedex France (France); Meltchakov, E.; Jérome, A. [Laboratoire Charles Fabry, Institut d' Optique, CNRS, Univ Paris Sud, 2 Avenue Augustin Fresnel, 91127 Palaiseau cedex France (France); Roulliay, M. [Institut des Sciences Moléculaires d’Orsay UMR 8214, Univ Paris Sud, 91405 Orsay France (France); Bridou, F. [Laboratoire Charles Fabry, Institut d' Optique, CNRS, Univ Paris Sud, 2 Avenue Augustin Fresnel, 91127 Palaiseau cedex France (France); Gasc, K. [Centre National d’Etudes Spatiales (CNES), 18 Avenue E. Belin, 31401 Toulouse (France)

    2014-02-03

    In this paper, we report on the design, synthesis and characterization of extreme ultraviolet interferential mirrors for solar imaging applications in the spectral range 17 nm–34 nm. This research is carried out in the context of the preparation of the European Space Agency Solar Orbiter mission. The purpose of this study consists in optimizing the deposition of Al-based multilayers by ion beam sputtering according to several parameters such as the ion beam current and the sputtering angle. After optimization of Al thin films, several kinds of Al-based multilayer mirrors have been compared. We have deposited and characterized bi-material and also tri-material periodic multilayers: aluminum/molybdenum [Al/Mo], aluminum/molybdenum/boron carbide [Al/Mo/B{sub 4}C] and aluminum/molybdenum/silicon carbide [Al/Mo/SiC]. Best experimental results have been obtained on Al/Mo/SiC samples: we have measured reflectivity up to 48% at 17.3 nm and 27.5% at 28.2 nm on a synchrotron radiation source. - Highlights: • Design and synthesis of extreme ultraviolet interferential mirrors. • Optimization of aluminum thin films by adjusting several deposition parameters. • Comparison of results obtained with different types of Al-based multilayer mirrors. • Reflectivity up to 48% at 17.3 nm on a synchrotron radiation source.

  14. Ion beam sputtered aluminum based multilayer mirrors for extreme ultraviolet solar imaging

    International Nuclear Information System (INIS)

    Ziani, A.; Delmotte, F.; Le Paven-Thivet, C.; Meltchakov, E.; Jérome, A.; Roulliay, M.; Bridou, F.; Gasc, K.

    2014-01-01

    In this paper, we report on the design, synthesis and characterization of extreme ultraviolet interferential mirrors for solar imaging applications in the spectral range 17 nm–34 nm. This research is carried out in the context of the preparation of the European Space Agency Solar Orbiter mission. The purpose of this study consists in optimizing the deposition of Al-based multilayers by ion beam sputtering according to several parameters such as the ion beam current and the sputtering angle. After optimization of Al thin films, several kinds of Al-based multilayer mirrors have been compared. We have deposited and characterized bi-material and also tri-material periodic multilayers: aluminum/molybdenum [Al/Mo], aluminum/molybdenum/boron carbide [Al/Mo/B 4 C] and aluminum/molybdenum/silicon carbide [Al/Mo/SiC]. Best experimental results have been obtained on Al/Mo/SiC samples: we have measured reflectivity up to 48% at 17.3 nm and 27.5% at 28.2 nm on a synchrotron radiation source. - Highlights: • Design and synthesis of extreme ultraviolet interferential mirrors. • Optimization of aluminum thin films by adjusting several deposition parameters. • Comparison of results obtained with different types of Al-based multilayer mirrors. • Reflectivity up to 48% at 17.3 nm on a synchrotron radiation source

  15. Magnetic and structural properties of ion beam sputtered Fe–Zr–Nb–B–Cu thin films

    International Nuclear Information System (INIS)

    Modak, S.S.; Kane, S.N.; Gupta, A.; Mazaleyrat, F.; LoBue, M.; Coisson, M.; Celegato, F.; Tiberto, P.; Vinai, F.

    2012-01-01

    Magnetic and structural properties of Fe–Zr–Nb–B–Cu thin films, prepared by ion beam sputtering on silicon substrates by using a target made up of amorphous ribbons of nominal composition Fe 84 Zr 3.5 Nb 3.5 B 8 Cu 1 , are reported. As-deposited thin film samples exhibit an in-plane uniaxial anisotropy, which can be ascribed to the preparation technique and the coupling of quenched-in internal stresses. Structural measurements indicate no significant variation of the grain size with thickness and with the annealing temperature. Increase in surface irregularities with annealing temperature and oxidation results in aggregates that would act as pinning centers, affecting the magnetic properties leading to magnetic hardening of the specimens. The role of the magnetic anisotropy is thoroughly discussed with the help of magnetic and ferromagnetic resonance measurements. - Highlights: ►Ion beam sputtered Fe–Zr–Nb–B–Cu thin films of different thickness are prepared. ►Films exhibit in-plane uniaxial anisotropy, which reduces with thermal treatments. ►Increased surface roughness leads to wall pinning, increasing the coercive field.

  16. Nanocrystalline magnetite thin films grown by dual ion-beam sputtering

    International Nuclear Information System (INIS)

    Prieto, Pilar; Ruiz, Patricia; Ferrer, Isabel J.; Figuera, Juan de la; Marco, José F.

    2015-01-01

    Highlights: • We have grown tensile and compressive strained nanocrystalline magnetite thin films by dual ion beam sputtering. • The magnetic and thermoelectric properties can be controlled by the deposition conditions. • The magnetic anisotropy depends on the crystalline grain size. • The thermoelectric properties depend on the type of strain induced in the films. • In plane uniaxial magnetic anisotropy develops in magnetite thin films with grain sizes ⩽20 nm. - Abstract: We have explored the influence of an ion-assisted beam in the thermoelectric and magnetic properties of nanocrystalline magnetite thin films grown by ion-beam sputtering. The microstructure has been investigated by XRD. Tensile and compressive strained thin films have been obtained as a function of the parameters of the ion-assisted beam. The evolution of the in-plane magnetic anisotropy was attributed to crystalline grain size. In some films, magneto-optical Kerr effect measurements reveal the existence of uniaxial magnetic anisotropy induced by the deposition process related with a small grain size (⩽20 nm). Isotropic magnetic properties have observed in nanocrystalline magnetite thin film having larger grain sizes. The largest power factor of all the films prepared (0.47 μW/K 2 cm), obtained from a Seebeck coefficient of −80 μV/K and an electrical resistivity of 13 mΩ cm, is obtained in a nanocrystalline magnetite thin film with an expanded out-of-plane lattice and with a grain size ≈30 nm

  17. ITO/InP solar cells: A comparison of devices fabricated by ion beam and RF sputtering of the ITO

    Science.gov (United States)

    Coutts, T. J.

    1987-01-01

    This work was performed with the view of elucidating the behavior of indium tin oxide/indium phosphide (ITO/InP) solar cells prepared by RF and ion beam sputtering. It was found that using RF sputter deposition of the ITO always leads to more efficient devices than ion beam sputter deposition. An important aspect of the former technique is the exposure of the single crystal p-InP substrates to a very low plasma power prior to deposition. Substrates treated in this manner have also been used for ion beam deposition of ITO. In this case the cells behave very similarly to the RF deposited cells, thus suggesting that the lower power plasma exposure (LPPE) is the crucial process step.

  18. Gold removal rate by ion sputtering as a function of ion-beam voltage and raster size using Auger electron spectroscopy. Final report

    International Nuclear Information System (INIS)

    Boehning, C.W.

    1983-01-01

    Gold removal rate was measured as a function of ion beam voltage and raster size using Auger electron spectroscopy (AES). Three different gold thicknesses were developed as standards. Two sputter rate calibration curves were generated by which gold sputter rate could be determined for variations in ion beam voltage or raster size

  19. Low temperature mechanical dissipation of an ion-beam sputtered silica film

    International Nuclear Information System (INIS)

    Martin, I W; Craig, K; Bassiri, R; Hough, J; Robie, R; Rowan, S; Nawrodt, R; Schwarz, C; Harry, G; Penn, S; Reid, S

    2014-01-01

    Thermal noise arising from mechanical dissipation in oxide mirror coatings is an important limit to the sensitivity of future gravitational wave detectors, optical atomic clocks and other precision measurement systems. Here, we present measurements of the temperature dependence of the mechanical dissipation of an ion-beam sputtered silica film between 10 and 300 K. A dissipation peak was observed at 20 K and the low temperature dissipation was found to have significantly different characteristics than observed for bulk silica and silica films deposited by alternative techniques. These results are important for better understanding the underlying mechanisms of mechanical dissipation, and thus thermal noise, in the most commonly-used reflective coatings for precision measurements. (paper)

  20. Electronic properties of single Ge/Si quantum dot grown by ion beam sputtering deposition.

    Science.gov (United States)

    Wang, C; Ke, S Y; Yang, J; Hu, W D; Qiu, F; Wang, R F; Yang, Y

    2015-03-13

    The dependence of the electronic properties of a single Ge/Si quantum dot (QD) grown by the ion-beam sputtering deposition technique on growth temperature and QD diameter is investigated by conductive atomic force microscopy (CAFM). The Si-Ge intermixing effect is demonstrated to be important for the current distribution of single QDs. The current staircase induced by the Coulomb blockade effect is observed at higher growth temperatures (>700 °C) due to the formation of an additional barrier between dislocated QDs and Si substrate for the resonant tunneling of holes. According to the proposed single-hole-tunneling model, the fact that the intermixing effect is observed to increase as the incoherent QD size decreases may explain the increase in the starting voltage of the current staircase and the decrease in the current step width.

  1. Capability of focused Ar ion beam sputtering for combinatorial synthesis of metal films

    International Nuclear Information System (INIS)

    Nagata, T.; Haemori, M.; Chikyow, T.

    2009-01-01

    The authors examined the use of focused Ar ion beam sputtering (FAIS) for combinatorial synthesis. A Langmuir probe revealed that the electron temperature and density for FAIS of metal film deposition was lower than that of other major combinatorial thin film growth techniques such as pulsed laser deposition. Combining FAIS with the combinatorial method allowed the compositional fraction of the Pt-Ru binary alloy to be systematically controlled. Pt-Ru alloy metal film grew epitaxially on ZnO substrates, and crystal structures changed from the Pt phase (cubic structure) to the Ru phase (hexagonal structure) in the Pt-Ru alloy phase diagram. The alloy film has a smooth surface, with the Ru phase, in particular, showing a clear step-and-terrace structure. The combination of FAIS and the combinatorial method has major potential for the fabrication of high quality composition-spread metal film.

  2. Capability of focused Ar ion beam sputtering for combinatorial synthesis of metal films

    Energy Technology Data Exchange (ETDEWEB)

    Nagata, T.; Haemori, M.; Chikyow, T. [Advanced Electric Materials Center, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

    2009-05-15

    The authors examined the use of focused Ar ion beam sputtering (FAIS) for combinatorial synthesis. A Langmuir probe revealed that the electron temperature and density for FAIS of metal film deposition was lower than that of other major combinatorial thin film growth techniques such as pulsed laser deposition. Combining FAIS with the combinatorial method allowed the compositional fraction of the Pt-Ru binary alloy to be systematically controlled. Pt-Ru alloy metal film grew epitaxially on ZnO substrates, and crystal structures changed from the Pt phase (cubic structure) to the Ru phase (hexagonal structure) in the Pt-Ru alloy phase diagram. The alloy film has a smooth surface, with the Ru phase, in particular, showing a clear step-and-terrace structure. The combination of FAIS and the combinatorial method has major potential for the fabrication of high quality composition-spread metal film.

  3. Optical and tribomechanical stability of optically variable interference security devices prepared by dual ion beam sputtering.

    Science.gov (United States)

    Çetinörgü-Goldenberg, Eda; Baloukas, Bill; Zabeida, Oleg; Klemberg-Sapieha, Jolanta; Martinu, Ludvik

    2011-07-01

    Optical security devices applied to banknotes and other documents are exposed to different types of harsh environments involving the cycling of temperature, humidity, chemical agents, and tribomechanical intrusion. In the present work, we study the stability of optically variable devices, namely metameric interference filters, prepared by dual ion beam sputtering onto polycarbonate and glass substrates. Specifically, we assess the color difference as well as the changes in the mechanical properties and integrity of all-dielectric and metal-dielectric systems due to exposure to bleach, detergent and acetone agents, and heat and humidity. The results underline a significant role of the substrate material, of the interfaces, and of the nature and microstructure of the deposited films in long term stability under everyday application conditions.

  4. Ion beam sputtering of Ti: Influence of process parameters on angular and energy distribution of sputtered and backscattered particles

    Energy Technology Data Exchange (ETDEWEB)

    Lautenschläger, T. [Leibniz-Institute of Surface Modification, 04318 Leipzig (Germany); Feder, R., E-mail: thomas.lautenschlaeger@iom-leipzig.de [Leibniz-Institute of Surface Modification, 04318 Leipzig (Germany); Neumann, H. [Leibniz-Institute of Surface Modification, 04318 Leipzig (Germany); Rice, C.; Schubert, M. [Department of Electrical and Computer Engineering and Center for Nanohybrid Functional Materials, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0511 (United States); Bundesmann, C. [Leibniz-Institute of Surface Modification, 04318 Leipzig (Germany)

    2016-10-15

    Highlights: • Ion beam sputter deposition under systematic variation of process parameters. • Angular and energy distribution of secondary particles. • Interaction between incorporated and impinging process gas. • Measured data compared with simulations. - Abstract: In the present study, the influence of ion energy and geometrical parameters onto the angular and energy distribution of secondary particles for sputtering a Ti target with Ar ions is investigated. The angular distribution of the particle flux of the sputtered Ti atoms was determined by the collection method, i.e. by growing Ti films and measuring their thickness. The formal description of the particle flux can be realized by dividing it into an isotropic and an anisotropic part. The experimental data show that increasing the ion energy or decreasing the ion incidence angle lead to an increase of the isotropic part, which is in good agreement with basic sputtering theory. The energy distribution of the secondary ions was measured using an energy-selective mass spectrometer. The energy distribution of the sputtered target ions shows a maximum at an energy between 10 eV and 20 eV followed by a decay proportional to E{sup −n}, which is in principle in accordance with Thompson’s theory, followed by a high energetic tail. When the sum of incidence angle and emission angle is increased, the high-energetic tail expands to higher energies and an additional peak due to direct sputtering events may occur. In the case of backscattered primary Ar ions, a maximum at an energy between 5 eV and 10 eV appears and, depending on the scattering geometry, an additional broad peak at a higher energy due to direct scattering events is observed. The center energy of the additional structure shifts systematically to higher energies with decreasing scattering angle or increasing ion energy. The experimental results are compared to calculations based on simple elastic two-particle-interaction theory and to

  5. Room-Temperature Growth of SiC Thin Films by Dual-Ion-Beam Sputtering Deposition

    Directory of Open Access Journals (Sweden)

    C. G. Jin

    2008-01-01

    Full Text Available Silicon carbide (SiC films were prepared by single and dual-ion-beamsputtering deposition at room temperature. An assisted Ar+ ion beam (ion energy Ei = 150 eV was directed to bombard the substrate surface to be helpful for forming SiC films. The microstructure and optical properties of nonirradicated and assisted ion-beam irradicated films have been characterized by transmission electron microscopy (TEM, scanning electron microscopy (SEM, Fourier transform infrared spectroscopy (FTIR, and Raman spectra. TEM result shows that the films are amorphous. The films exposed to a low-energy assisted ion-beam irradicated during sputtering from a-SiC target have exhibited smoother and compacter surface topography than which deposited with nonirradicated. The ion-beam irradicated improves the adhesion between film and substrate and releases the stress between film and substrate. With assisted ion-beam irradicated, the density of the Si–C bond in the film has increased. At the same time, the excess C atoms or the size of the sp2 bonded clusters reduces, and the a-Si phase decreases. These results indicate that the composition of the film is mainly Si–C bond.

  6. Stoichiometric carbon nitride synthesized by ion beam sputtering and post nitrogen ion implantation

    International Nuclear Information System (INIS)

    Valizadeh, R.; Colligon, J.S.; Katardiev, I.V.; Faunce, C.A.; Donnelly, S.E.

    1998-01-01

    Full text: Carbon nitride films have been deposited on Si (100) by ion beam sputtering a vitreous graphite target with nitrogen and argon ions with and without concurrent N2 ion bombardment at room temperature. The sputtering beam energy was 1000 eV and the assisted beam energy was 300 eV with ion / atom arrival ratio ranging from 0.5 to 5. The carbon nitride films were deposited both as single layer directly on silicon substrate and as multilayer between two layers of stoichiometric amorphous silicon nitride and polycrystalline titanium nitride. The deposited films were implanted ex-situ with 30 keV nitrogen ions with various doses ranging from 1E17 to 4E17 ions.cm -2 and 2 GeV xenon ion with a dose of 1E12 ions.cm -2 . The nitrogen concentration of the films was measured with Rutherford Backscattering (RBS), Secondary Neutral Mass Spectrometry (SNMS) and Parallel Electron Energy Loss Spectroscopy (PEELS). The nitrogen concentration for as deposited sample was 34 at% and stoichiometric carbon nitride C 3 N 4 was achieved by post nitrogen implantation of the multi-layered films. Post bombardment of single layer carbon nitride films lead to reduction in the total nitrogen concentration. Carbon K edge structure obtained from PEELS analysis suggested that the amorphous C 3 N 4 matrix was predominantly sp 2 bonded. This was confirmed by Fourier Transforrn Infra-Red Spectroscopy (FTIR) analysis of the single CN layer which showed the nitrogen was mostly bonded with carbon in nitrile (C≡N) and imine (C=N) groups. The microstructure of the film was determined by Transmission Electron Microscopy (TEM) which indicated that the films were amorphous

  7. Fabrication of highly oriented β-FeSi2 by ion beam sputter deposition

    International Nuclear Information System (INIS)

    Nakanoya, Takamitsu; Sasase, Masato; Yamamoto, Hiroyuki; Saito, Takeru; Hojou, Kiichi

    2002-01-01

    We have prepared the 'environmentally friendly' semiconductor, β-FeSi 2 thin films by ion beam sputter deposition method. The temperature of Si (100) substrate during the deposition and total amount of deposited Fe have been changed in order to find the optimum condition of the film formation. The crystallinity and surface morphology of the formed silicides were analyzed by X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. It is understood that the domain of the epitaxially grown β-FeSi 2 increases with the substrate temperature up to 700degC at the fixed amount of deposited Fe (33 nm) by XRD spectra. On the other hand, α-FeSi 2 is appeared and increased with the temperature above 700degC. Granulation of the surface is also observed by SEM images at this temperature region. At the fixed temperature condition (700degC), formation of α phase, which is obtained at the higher temperature compared with β phase, is observed for the fewer deposited samples. These results suggest the possibility of the epitaxially grown β-FeSi 2 formation at the lower (< 700degC) temperature region. (author)

  8. Nanoscale pattern formation at surfaces under ion-beam sputtering: A perspective from continuum models

    International Nuclear Information System (INIS)

    Cuerno, Rodolfo; Castro, Mario; Munoz-Garcia, Javier; Gago, Raul; Vazquez, Luis

    2011-01-01

    Although reports on surface nanostructuring of solid targets by low to medium energy ion irradiation date back to the 1960s, only with the advent of high resolution tools for surface/interface characterization has the high potential of this procedure been recognized as a method for efficient production of surface patterns. Such morphologies are made up of periodic arrangements of nanometric sized features, like ripples and dots, with interest for technological applications due to their electronic, magnetic, and optical properties. Thus, roughly for the last ten years large efforts have been directed towards harnessing this nanofabrication technique. However, and particularly in view of recent experimental developments, we can say that the basic mechanisms controlling these pattern formation processes remain poorly understood. The lack of nanostructuring at low angles of incidence on some pure monoelemental targets, the role of impurities in the surface dynamics and other recent observations are challenging the classic view on the phenomenon as the mere interplay between the curvature dependence of the sputtering yield and surface diffusion. We review the main attempts at a theoretical (continuum) description of these systems, with emphasis on recent developments. Strong hints already exist that the nature of the morphological instability has to be rethought as originating in the material flow that is induced by the ion beam.

  9. Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

    Science.gov (United States)

    Horak, P.; Bejsovec, V.; Vacik, J.; Lavrentiev, V.; Vrnata, M.; Kormunda, M.; Danis, S.

    2016-12-01

    Copper oxide films were prepared by thermal oxidation of thin Cu films deposited on substrates by ion beam sputtering. The subsequent oxidation was achieved in the temperature range of 200 °C-600 °C with time of treatment from 1 to 7 h (with a 1-h step) in a furnace open to air. At temperatures 250 °C-600 °C, the dominant phase formed was CuO, while at 200 °C mainly the Cu2O phase was identified. However, the oxidation at 200 °C led to a more complicated composition - in the depth Cu2O phase was observed, though in the near-surface layer the CuO dominant phase was found with a significant presence of Cu(OH)2. A limited amount of Cu2O was also found in samples annealed at 600 °C. The sheet resistance RS of the as-deposited Cu sample was 2.22 Ω/□, after gradual annealing RS was measured in the range 2.64 MΩ/□-2.45 GΩ/□. The highest RS values were obtained after annealing at 300 °C and 350 °C, respectively. Oxygen depth distribution was studied using the 16O(α,α) nuclear reaction with the resonance at energy 3032 keV. It was confirmed that the higher oxidation degree of copper is located in the near-surface region. Preliminary tests of the copper oxide films as an active layer of a chemiresistor were also performed. Hydrogen and methanol vapours, with a concentration of 1000 ppm, were detected by the sensor at an operating temperature of 300 °C and 350 °C, respectively. The response of the sensors, pointed at the p-type conductivity, was improved by the addition of thin Pd or Au catalytic films to the oxidic film surface. Pd-covered films showed an increased response to hydrogen at 300 °C, while Au-covered films were more sensitive to methanol vapours at 350 °C.

  10. Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

    Energy Technology Data Exchange (ETDEWEB)

    Horak, P., E-mail: phorak@ujf.cas.cz [Nuclear Physics Institute, Academy of Sciences of the Czech Republic, 250 68 Řež (Czech Republic); Bejsovec, V.; Vacik, J.; Lavrentiev, V. [Nuclear Physics Institute, Academy of Sciences of the Czech Republic, 250 68 Řež (Czech Republic); Vrnata, M. [Department of Physics and Measurements, The University of Chemistry and Technology, Prague, Technická 5, 166 28 Prague 6 (Czech Republic); Kormunda, M. [Department of Physics, Jan Evangelista Purkyně University in Ústí nad Labem, České mládeže 8, 400 96 Ústí nad Labem (Czech Republic); Danis, S. [Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 5, 121 16 Prague 2 (Czech Republic)

    2016-12-15

    Highlights: • A rapid oxidation process of thin copper films. • Sheet resistance up to 10{sup 9} Ω/◊. • Mixed oxide phase at 200 °C with significant hydroxide presence. • Gas sensing response to 1000 ppm of hydrogen and methanol vapours. • Increased sensitivity with Pd and Au catalyst to hydrogen and methanol, respectively. - Abstract: Copper oxide films were prepared by thermal oxidation of thin Cu films deposited on substrates by ion beam sputtering. The subsequent oxidation was achieved in the temperature range of 200 °C–600 °C with time of treatment from 1 to 7 h (with a 1-h step) in a furnace open to air. At temperatures 250 °C–600 °C, the dominant phase formed was CuO, while at 200 °C mainly the Cu{sub 2}O phase was identified. However, the oxidation at 200 °C led to a more complicated composition − in the depth Cu{sub 2}O phase was observed, though in the near-surface layer the CuO dominant phase was found with a significant presence of Cu(OH){sub 2}. A limited amount of Cu{sub 2}O was also found in samples annealed at 600 °C. The sheet resistance R{sub S} of the as-deposited Cu sample was 2.22 Ω/□, after gradual annealing R{sub S} was measured in the range 2.64 MΩ/□–2.45 GΩ/□. The highest R{sub S} values were obtained after annealing at 300 °C and 350 °C, respectively. Oxygen depth distribution was studied using the {sup 16}O(α,α) nuclear reaction with the resonance at energy 3032 keV. It was confirmed that the higher oxidation degree of copper is located in the near-surface region. Preliminary tests of the copper oxide films as an active layer of a chemiresistor were also performed. Hydrogen and methanol vapours, with a concentration of 1000 ppm, were detected by the sensor at an operating temperature of 300 °C and 350 °C, respectively. The response of the sensors, pointed at the p-type conductivity, was improved by the addition of thin Pd or Au catalytic films to the oxidic film surface. Pd-covered films showed

  11. Nickel oxide films by thermal annealing of ion-beam-sputtered Ni: Structure and electro-optical properties

    Czech Academy of Sciences Publication Activity Database

    Horák, Pavel; Remeš, Zdeněk; Bejšovec, Václav; Vacík, Jiří; Daniš, S.; Kormunda, M.

    2017-01-01

    Roč. 640, č. 10 (2017), s. 52-59 ISSN 0040-6090 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA ČR(CZ) GA14-05053S; GA MŠk LM2015056 Institutional support: RVO:61389005 ; RVO:68378271 Keywords : NiO * ion beam sputtering * thermal annealing * nuclear analytical methods * optical properties Subject RIV: JK - Corrosion ; Surface Treatment of Materials; BM - Solid Matter Physics ; Magnetism (FZU-D) OBOR OECD: Coating and films; Condensed matter physics (including formerly solid state physics, supercond.) (FZU-D) Impact factor: 1.879, year: 2016

  12. Highly ordered nanopatterns on Ge and Si surfaces by ion beam sputtering

    International Nuclear Information System (INIS)

    Ziberi, B; Cornejo, M; Frost, F; Rauschenbach, B

    2009-01-01

    The bombardment of surfaces with low-energy ion beams leads to material erosion and can be accompanied by changes in the topography. Under certain conditions this surface erosion can result in well-ordered nanostructures. Here an overview of the pattern formation on Si and Ge surfaces under low-energy ion beam erosion at room temperature will be given. In particular, the formation of ripple and dot patterns, and the influence of different process parameters on their formation, ordering, shape and type will be discussed. Furthermore, the internal ion beam parameters inherent to broad beam ion sources are considered as an additional degree of freedom for controlling the pattern formation process. In this context: (i) formation of ripples at near-normal ion incidence, (ii) formation of dots at oblique ion incidence without sample rotation, (iii) transition between patterns, (iv) formation of ripples with different orientations and (v) long range ordered dot patterns will be presented and discussed.

  13. Study of Sb/SnO{sub 2} bi-layer films prepared by ion beam sputtering deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chun-Min [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Huang, Chun-Chieh [Department of Electrical Engineering, Cheng Shiu University, No. 840, Chengcing Road, Niaosong Township, Kaohsiung 833, Taiwan, ROC (China); Kuo, Jui-Chao [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Huang, Jow-Lay, E-mail: jlh888@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, ROC (China); Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 701, Taiwan, ROC (China)

    2014-11-03

    In the present work, bi-layer thin films of Sb/SnO{sub 2} were produced on unheated glass substrates using ion beam sputtering (IBS) technique without post annealing treatment. The thickness of Sb layers was varied from 2 to 10 nm and the Sb layers were deposited on SnO{sub 2} layers having thicknesses of 40 nm to 115 nm. The effect of thickness was studied on the morphological, electrical and optical properties. The Sb/SnO{sub 2} bi-layer resulted in lowering the electrical resistivity as well as reducing the optical transmittance. However, the optical and electrical properties of the bi-layer films were mainly influenced by the thickness of Sb layers due to progressive transfer in structures from aggregate to continuous films. The bi-layer films show the electrical resistivity of 1.4 × 10{sup −3} Ω cm and an optical transmittance of 26% for Sb film having 10 nm thickness. - Highlights: • Bi-layer Sb/SnO{sub 2} structures were synthesized by ion beam sputtering (IBS) technique. • The 6 nm-thick Sb film is a transition region in this study. • The conductivity of the bi-layer films is increased as Sb thickness increases. • The transmittance of the bi-layer films is decreased as Sb thickness increases.

  14. Ion-beam technologies

    Energy Technology Data Exchange (ETDEWEB)

    Fenske, G.R. [Argonne National Lab., IL (United States)

    1993-01-01

    This compilation of figures and diagrams reviews processes for depositing diamond/diamond-like carbon films. Processes addressed are chemical vapor deposition (HFCVD, PACVD, etc.), plasma vapor deposition (plasma sputtering, ion beam sputtering, evaporation, etc.), low-energy ion implantation, and hybrid processes (biased sputtering, IBAD, biased HFCVD, etc.). The tribological performance of coatings produced by different means is discussed.

  15. Computer simulation of scattered ion and sputtered species effects in ion beam sputter-deposition of high temperature superconducting thin films

    International Nuclear Information System (INIS)

    Krauss, A.R.; Auciello, O.

    1992-01-01

    Ion beam sputter-deposition is a technique currently used by many groups to produce single and multicomponent thin films. This technique provides several advantages over other deposition methods, which include the capability for yielding higher film density, accurate stoichiometry control, and smooth surfaces. However, the relatively high kinetic energies associated with ion beam sputtering also lead to difficulties if the process is not properly controlled. Computer simulations have been performed to determine net deposition rates, as well as the secondary erosion, lattice damage, and gas implantation in the films, associated with primary ions scattered from elemental Y, Ba and Cu targets used to produce high temperature superconducting Y-Ba-Cu-O films. The simulations were performed using the TRIM code for different ion masses and kinetic energies, and different deposition geometries. Results are presented for primary beams of Ar + , Kr + and Xe + incident on Ba and Cu targets at 0 degrees and 45 degrees with respect to the surface normal, with the substrate positioned at 0 degrees and 45 degrees. The calculations indicate that the target composition, mass and kinetic energy of the primary beam, angle of incidence on the target, and position and orientation of the substrate affect the film damage and trapped primary beam gas by up to 5 orders of magnitude

  16. Temperature dependence of InN film deposition by an RF plasma-assisted reactive ion beam sputtering deposition technique

    International Nuclear Information System (INIS)

    Shinoda, Hiroyuki; Mutsukura, Nobuki

    2005-01-01

    Indium nitride (InN) films were deposited on Si(100) substrates using a radiofrequency (RF) plasma-assisted reactive ion beam sputtering deposition technique at various substrate temperatures. The X-ray diffraction patterns of the InN films suggest that the InN films deposited at substrate temperatures up to 370 deg C were cubic crystalline InN; and at 500 deg C, the InN film was hexagonal crystalline InN. In a scanning electron microscope image of the InN film surface, facets of cubic single-crystalline InN grains were clearly observed on the InN film deposited at 370 deg C. The inclusion of metallic indium appeared on the InN film deposited at 500 deg C

  17. Second order nonlinear optical properties of zinc oxide films deposited by low temperature dual ion beam sputtering

    International Nuclear Information System (INIS)

    Larciprete, M.C.; Passeri, D.; Michelotti, F.; Paoloni, S.; Sibilia, C.; Bertolotti, M.; Belardini, A.; Sarto, F.; Somma, F.; Lo Mastro, S.

    2005-01-01

    We investigated second order optical nonlinearity of zinc oxide thin films, grown on glass substrates by the dual ion beam sputtering technique under different deposition conditions. Linear optical characterization of the films was carried out by spectrophotometric optical transmittance and reflectance measurements, giving the complex refractive index dispersion. Resistivity of the films was determined using the four-point probe sheet resistance method. Second harmonic generation measurements were performed by means of the Maker fringes technique where the fundamental beam was originated by nanosecond laser at λ=1064 nm. We found a relatively high nonlinear optical response, and evidence of a dependence of the nonlinear coefficient on the deposition parameters for each sample. Moreover, the crystalline properties of the films were investigated by x-ray diffraction measurements and correlation with second order nonlinearity were analyzed. Finally, we investigated the influence of the oxygen flow rate during the deposition process on both the second order nonlinearity and the structural properties of the samples

  18. The effect of FR enhancement in reactive ion beam sputtered Bi, Gd, Al-substituted iron- garnets: Bi2O3 nanocomposite films

    OpenAIRE

    Berzhansky, V.; Shaposhnikov, A.; Karavainikov, A.; Prokopov, A.; Mikhailova, T.; Lukienko, I.; Kharchenko, Yu.; Miloslavskaya, O.; Kharchenko, N.

    2012-01-01

    The effect of considerable Faraday rotation (FR) and figure of merit (Q) enhancement in Bi, Gd, Al-substituted iron garnets: Bi2O3 nano-composite films produced by separate reactive ion beam sputtered Bi:YIG and Bi2O3 films was found. It reached threefold enhancement of the FR and twofold of the Q one on GGG substrates.

  19. Ion beam texturing

    Science.gov (United States)

    Hudson, W. R.

    1977-01-01

    A microscopic surface texture was created by sputter-etching a surface while simultaneously sputter-depositing a lower sputter yield material onto the surface. A xenon ion-beam source was used to perform the texturing process on samples as large as 3-cm diameter. Textured surfaces have been characterized with SEM photomicrographs for a large number of materials including Cu, Al, Si, Ti, Ni, Fe, stainless steel, Au, and Ag. A number of texturing parameters are studied including the variation of texture with ion-beam powder, surface temperature, and the rate of texture growth with sputter etching time.

  20. Angular Distributions of Sputtered Atoms from Semiconductor Targets at Grazing Ion Beam Incidence Angles

    International Nuclear Information System (INIS)

    Sekowski, M.; Burenkov, A.; Martinez-Limia, A.; Hernandez-Mangas, J.; Ryssel, H.

    2008-01-01

    Angular distributions of ion sputtered germanium and silicon atoms are investigated within this work. Experiments are performed for the case of grazing ion incidence angles, where the resulting angular distributions are asymmetrical with respect to the polar angle of the sputtered atoms. The performed experiments are compared to Monte-Carlo simulations from different programs. We show here an improved model for the angular distribution, which has an additional dependence of the ion incidence angle.

  1. The influence of target structure on topographical features produced by ion beam sputtering

    International Nuclear Information System (INIS)

    Whitton, J.L.; Grant, W.A.

    1981-01-01

    Ion beam erosion of solid surfaces often results in the development of distinctive topographical features. The relationship between the type of features formed by ion erosion and target structure has been investigated. Single crystals of copper and nickel and the amorphous alloy Metglas have been bombarded to high doses (approx. >=10 19 ions cm -2 ) with 40 keV Ar + and P + . Topography changes were monitored using SEM and structural changes by TEM. Targets that retain their long range crystallinity show sharply defined, regular features that are related to the target structure. Targets that are highly disordered, either intrinsically or as a result of the ion bombardment, produce diffuse, smaller features. Those differences are observed at all stages in topographical evolution. (orig.)

  2. Improving the growth of Ge/Si islands by modulating the spacing between screen and accelerator grids in ion beam sputtering deposition system

    International Nuclear Information System (INIS)

    Yang, Jie; Zhao, Bo; Wang, Chong; Qiu, Feng; Wang, Rongfei; Yang, Yu

    2016-01-01

    Highlights: • Ge islands were prepared by ion beam sputtering with different grid-to-grid gaps. • Ge islands with larger sizes and low density are observed in 1-mm-spaced samples. • The island growth was determined by sputter energy and the quality of Si buffer. • The crystalline volume fraction of buffer must be higher than 72% to grow islands. - Abstract: Ge islands were fabricated on Si buffer layer by ion beam sputtering deposition with a spacing between the screen and accelerator grids of either 1 mm or 2 mm. The Si buffer layer exhibits mixed-phase microcrystallinity for samples grown with 1 mm spacing and crystallinity for those with 2 mm spacing. Ge islands are larger and less dense than those grown on the crystalline buffer because of the selective growth mechanism on the microcrystalline buffer. Moreover, the nucleation site of Ge islands formed on the crystalline Si buffer is random. Ge islands grown at different grid-to-grid gaps are characterized by two key factors, namely, divergence half angle of ion beam and crystallinity of buffer layer. High grid-to-grid spacing results in small divergence half angle, thereby enhancing the sputtering energy and redistribution of sputtered atoms. The crystalline volume fraction of the microcrystalline Si buffer was obtained based on the integrated intensity ratio of Raman peaks. The islands show decreased density with decreasing crystalline volume fraction and are difficult to observe at crystalline volume fractions lower than 72%.

  3. Improving the growth of Ge/Si islands by modulating the spacing between screen and accelerator grids in ion beam sputtering deposition system

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Jie; Zhao, Bo [Institute of Optoelectronic Information Materials, School of Materials Science and Engineering, Yunnan University, Kunming 650091 (China); Yunnan Key Laboratory for Micro/Nano Materials and Technology, Yunnan University, Kunming 650091 (China); Wang, Chong, E-mail: cwang@mail.sitp.ac.cn [Institute of Optoelectronic Information Materials, School of Materials Science and Engineering, Yunnan University, Kunming 650091 (China); Yunnan Key Laboratory for Micro/Nano Materials and Technology, Yunnan University, Kunming 650091 (China); Qiu, Feng; Wang, Rongfei [Institute of Optoelectronic Information Materials, School of Materials Science and Engineering, Yunnan University, Kunming 650091 (China); Yunnan Key Laboratory for Micro/Nano Materials and Technology, Yunnan University, Kunming 650091 (China); Yang, Yu, E-mail: yuyang@ynu.edu.cn [Institute of Optoelectronic Information Materials, School of Materials Science and Engineering, Yunnan University, Kunming 650091 (China); Yunnan Key Laboratory for Micro/Nano Materials and Technology, Yunnan University, Kunming 650091 (China)

    2016-11-15

    Highlights: • Ge islands were prepared by ion beam sputtering with different grid-to-grid gaps. • Ge islands with larger sizes and low density are observed in 1-mm-spaced samples. • The island growth was determined by sputter energy and the quality of Si buffer. • The crystalline volume fraction of buffer must be higher than 72% to grow islands. - Abstract: Ge islands were fabricated on Si buffer layer by ion beam sputtering deposition with a spacing between the screen and accelerator grids of either 1 mm or 2 mm. The Si buffer layer exhibits mixed-phase microcrystallinity for samples grown with 1 mm spacing and crystallinity for those with 2 mm spacing. Ge islands are larger and less dense than those grown on the crystalline buffer because of the selective growth mechanism on the microcrystalline buffer. Moreover, the nucleation site of Ge islands formed on the crystalline Si buffer is random. Ge islands grown at different grid-to-grid gaps are characterized by two key factors, namely, divergence half angle of ion beam and crystallinity of buffer layer. High grid-to-grid spacing results in small divergence half angle, thereby enhancing the sputtering energy and redistribution of sputtered atoms. The crystalline volume fraction of the microcrystalline Si buffer was obtained based on the integrated intensity ratio of Raman peaks. The islands show decreased density with decreasing crystalline volume fraction and are difficult to observe at crystalline volume fractions lower than 72%.

  4. Sputtering of carbon using hydrogen ion beams with energies of 60–800 eV

    Energy Technology Data Exchange (ETDEWEB)

    Sidorov, Dmitry S., E-mail: dmitrisidoroff@rambler.ru [Nizhny Novgorod State University, 23 Gagarina Avenue, Nizhny Novgorod, Nizhny Novgorod Region 603950 (Russian Federation); Chkhalo, Nikolay I., E-mail: chkhalo@ipm.sci-nnov.ru [Institute for Physics of Microstructures RAS, Academicheskaya Str. 7, Afonino, Nizhny Novgorod Region, Kstovsky District, Kstovo Region 603087 (Russian Federation); Mikhailenko, Mikhail S.; Pestov, Alexey E.; Polkovnikov, Vladimir N. [Institute for Physics of Microstructures RAS, Academicheskaya Str. 7, Afonino, Nizhny Novgorod Region, Kstovsky District, Kstovo Region 603087 (Russian Federation)

    2016-11-15

    This article presents the result of a study on the sputtering of carbon films by low-energy hydrogen ions. In particular, the etching rate and surface roughness were measured. The range of energies where the sputtering switches from pure chemical to a combination of chemical and physical mechanisms was determined. It is shown that Sigmund’s theory for ion etching does not work well for fields of energy less than 150 eV and that it accurately describes the dependence of a sputtering coefficient on ion energy for energies greater than 300 eV. A strong smoothing effect for the surface of carbon film was also found. This result is interesting in itself and for its significance for the manufacture of super-smooth surfaces for X-ray applications.

  5. Specific features of fullerene-bearing thin film growth using ion beam vacuum sputtering of fullerene mixtures with B, Fe, Se, Gd and Na

    International Nuclear Information System (INIS)

    Semenov, A.P.; Semenova, I.A.; Bulina, N.V.; Lopatin, V.A.; Karmanov, N.S.; Churilov, G.N.

    2005-01-01

    A new approach to the growth of films containing fullerenes and doping elements is described. It is suggested that a cluster mechanism of the target sputtering by accelerated ions makes possible the deposition of fullerenes on a substrate with a certain probability for dopant atoms being introduced into the cavities of fullerene molecules and a higher probability of the doping element introduction between fullerene molecules. The proposed method has been experimentally implemented by using an Ar ion beam to sputter C 60 /C 70 fullerene mixtures, synthesized in a plasmachemical reactor at a pressure of 10 5 Pa and containing a doping element, i.e. Fe, Na, B, Gd or Se. Micron-thick films containing C 60 and C 70 fullerenes and the corresponding dopant element, i.e. Fe, Na, B, Gd or Se, were grown from dopant-containing fullerene mixtures by ion beam sputtering in a vacuum of ∼10 -2 Pa [ru

  6. Multi-jump magnetic switching in ion-beam sputtered amorphous Co20Fe60B20 thin films

    International Nuclear Information System (INIS)

    Raju, M.; Chaudhary, Sujeet; Pandya, D. K.

    2013-01-01

    Unconventional multi-jump magnetization reversal and significant in-plane uniaxial magnetic anisotropy (UMA) in the ion-beam sputtered amorphous Co 20 Fe 60 B 20 (5–75 nm) thin films grown on Si/amorphous SiO 2 are reported. While such multi-jump behavior is observed in CoFeB(10 nm) film when the magnetic field is applied at 10°–20° away from the easy-axis, the same is observed in CoFeB(12.5 nm) film when the magnetic field is 45°–55° away from easy-axis. Unlike the previous reports of multi-jump switching in epitaxial films, their observance in the present case of amorphous CoFeB is remarkable. This multi-jump switching is found to disappear when the films are crystallized by annealing at 420 °C. The deposition geometry and the energy of the sputtered species appear to intrinsically induce a kind of bond orientation anisotropy in the films, which leads to the UMA in the as-grown amorphous CoFeB films. Exploitation of such multi-jump switching in amorphous CoFeB thin films could be of technological significance because of their applications in spintronic devices

  7. The influence of sequence of precursor films on CZTSe thin films prepared by ion-beam sputtering deposition

    Science.gov (United States)

    Zhao, Jun; Liang, Guangxing; Zeng, Yang; Fan, Ping; Hu, Juguang; Luo, Jingting; Zhang, Dongping

    2017-02-01

    The CuZnSn (CZT) precursor thin films are grown by ion-beam sputtering Cu, Zn, Sn targets with different orders and then sputtering Se target to fabricate Cu2ZnSnSe4 (CZTSe) absorber thin films on molybdenum substrates. They are annealed in the same vacuum chamber at 400 °C. The characterization methods of CZTSe thin films include X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM), and X-ray photoelectron spectra (XPS) in order to study the crystallographic properties, composition, surface morphology, electrical properties and so on. The results display that the CZTSe thin films got the strongest diffraction peak intensity and were with good crystalline quality and its morphology appeared smooth and compact with a sequence of Cu/Zn/Sn/Se, which reveals that the expected states for CZTSe are Cu1+, Zn2+, Sn4+, Se2+. With the good crystalline quality and close to ideal stoichiometric ratio the resistivity of the CZTSe film with the sequence of Cu/Zn/Sn/Se is lower, whose optical band gap is about 1.50 eV. Project supported by the National Natural Science Foundation of China (No. 61404086), the Basical Research Program of Shenzhen (Nos. JCYJ20150324140036866, JCYJ20150324141711581), and the Natural Science Foundation of SZU (No. 2014017).

  8. Structural and corrosion characterization of hydroxyapatite/zirconium nitride-coated AZ91 magnesium alloy by ion beam sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Kiahosseini, Seyed Rahim, E-mail: rkiahoseyni@yahoo.com [Young Researchers and Elite Club, Damghan Branch, Islamic Azad University, Damghan (Iran, Islamic Republic of); Afshar, Abdollah [Department of Material Science and Engineering, Sharif University of Technology, Tehran (Iran, Islamic Republic of); Mojtahedzadeh Larijani, Majid [Radiation Applications Research School, Nuclear Science and Technology Research Institute, Tehran (Iran, Islamic Republic of); Yousefpour, Mardali [Faculty of Materials and Metallurgical Engineering, Semnan University, Semnan, 35131-19111 (Iran, Islamic Republic of)

    2017-04-15

    Highlights: • The thickness of HA coatings increase by ion beam sputtering time. • The residual strain in HA structure decrease by deposition time increment. • Crystallite size of HA coatings increase by deposition time increment. • The best corrosion resistance occurs at intermediate deposition time. - Abstract: The adhesion of hydroxyapatite (HA) as a coating for the AZ91 magnesium alloy substrate can be improved by using the sputtering method and an intermediate layer, such as ZrN. In this study, HA coatings were applied on ZrN intermediate layers at a temperature of 300 °C for 180, 240, 300, 360, and 420 min by ion beam sputtering. A profilometer device was used to study the HA coating thickness, which changed from 2 μm for the 180-min deposition to 4.7 μm for 420-min deposition. The grazing incidence X-ray diffraction analysis method and the Williamson–Hall analysis were used for structural investigation. As the deposition time increased, the crystalline size increased from 50 nm to 690 nm. However, given sufficient time for stress relief on the coating structure, the lattice strain values were close to zero. Energy-dispersive X-ray spectroscopy results showed that the Ca/P ratio ranged from 1.73 to 1.81. The external indentation method was used to evaluate the coating adhesion to the substrate. The slope of curve for applied force changes versus the radius of cracks in the coating (dP/dr) varied in the range of 0.2–0.07 by the deposition time, indicating that the adhesion increased with the increase in coating thickness. The potentiodynamic polarization technique was used to study the corrosion behavior. With increasing deposition time, the corrosion potential of samples did not show a significant change, and the corrosion potential of all samples (coated and uncoated substrates) was more positive than approximately 55 mV. When the deposition time increased to 360 min, the corrosion current density decreased from 5.5 μA/cm{sup 2} to 0.33

  9. Directed ion beam sputter etching of polytetrafluorethylene (teflon) using an argon ion source

    Energy Technology Data Exchange (ETDEWEB)

    Garner, C E; Gabriel, S B; Kuo, Y S

    1982-09-24

    Polytetrafluoroethylene (Teflon) tubes of outside diameter 375-625 ..mu..m were perforated by bombarding the tubes with an argon ion beam. Holes of diameter 18 ..mu..m and 40 ..mu..m on a side and open-are ratios of 55% and 65% respectively were formed using electroformed nickel mesh masks. Scanning electron micrographs of the hole walls reveal that they are relatively smooth and that the holes go completely through the tubing walls. Holes with the smoothest walls and the sharpest definition were obtained by using low beam power densities and a tubing target temperature of less than 50/sup 0/C. Volumetric flow rate measurements show that the flow rate through the perforated tubules is 0.2-0.5 cm/sup 3/ min/sup -1/ for a pressure drop across the tubes of 2.2 Torr. The perforated microtubules have an important application in medicine for sufferers of hydrocephalus, a malady which results in the build-up of cerebrospinal fluid in the brain. The perforated tubing is inserted into the ventricle and serves as a shunt by draining off the excess cerebrospinal fluid into another part of the brain, where the fluid is absorbed by normal processes.

  10. Molecular dynamics and experimental studies on deposition mechanisms of ion beam sputtering

    International Nuclear Information System (INIS)

    Fang, T.-H.; Chang, W.-J.; Lin, C.-M.; Lien, W.-C.

    2008-01-01

    Molecular dynamics (MD) simulation and experimental methods are used to study the deposition mechanism of ionic beam sputtering (IBS), including the effects of incident energy, incident angle and deposition temperature on the growth process of nickel nanofilms. According to the simulation, the results showed that increasing the temperature of substrate decreases the surface roughness, average grain size and density. Increasing the incident angle increases the surface roughness and the average grain size of thin film, while decreasing its density. In addition, increasing the incident energy decreases the surface roughness and the average grain size of thin film, while increasing its density. For the cases of simulation, with the substrate temperature of 500 K, normal incident angle and 14.6 x 10 -17 J are appropriate, in order to obtain a smoother surface, a small grain size and a higher density of thin film. From the experimental results, the surface roughness of thin film deposited on the substrates of Si(1 0 0) and indium tin oxide (ITO) decreases with the increasing sputtering power, while the thickness of thin film shows an approximately linear increase with the increase of sputtering power

  11. Study of ion beam sputtered Fe/Si interfaces as a function of Si layer thickness

    Science.gov (United States)

    Kumar, Anil; Brajpuriya, Ranjeet; Singh, Priti

    2018-01-01

    The exchange interaction in metal/semiconductor interfaces is far from being completely understood. Therefore, in this paper, we have investigated the nature of silicon on the Fe interface in the ion beam deposited Fe/Si/Fe trilayers keeping the thickness of the Fe layers fixed at 3 nm and varying the thickness of the silicon sandwich layer from 1.5 nm to 4 nm. Grazing incidence x-ray diffraction and atomic force microscopy techniques were used, respectively, to study the structural and morphological changes in the deposited films as a function of layer thickness. The structural studies show silicide formation at the interfaces during deposition and better crystalline structure of Fe layers at a lower spacer layer thickness. The magnetization behavior was investigated using magneto-optical Kerr effect, which clearly shows that coupling between the ferromagnetic layers is highly influenced by the semiconductor spacer layer thickness. A strong antiferromagnetic coupling was observed for a value of tSi = 2.5 nm but above this value an unexpected behavior of hysteresis loop (step like) with two coercivity values is recorded. For spacer layer thickness greater than 2.5 nm, an elemental amorphous Si layer starts to appear in the spacer layer in addition to the silicide layer at the interfaces. It is observed that in the trilayer structure, Fe layers consist of various stacks, viz., Si doped Fe layers, ferromagnetic silicide layer, and nonmagnetic silicide layer at the interfaces. The two phase hysteresis loop is explained on the basis of magnetization reversal of two ferromagnetic layers, independent of each other, with different coercivities. X-ray photo electron spectroscopy technique was also used to study interfaces characteristics as a function of tSi.

  12. Temperature dependence of the optical properties of ion-beam sputtered ZrN films

    Energy Technology Data Exchange (ETDEWEB)

    Larijani, M.M. [NSTRI, AEOI, Radiation Applications Research School, Karaj (Iran, Islamic Republic of); Kiani, M. [Azad University, South Tehran Branch, Department of Physics, Tehran (Iran, Islamic Republic of); Jafari-Khamse, E. [NSTRI, AEOI, Radiation Applications Research School, Karaj (Iran, Islamic Republic of); University of Kashan, Department of Physics, Kashan (Iran, Islamic Republic of); Fathollahi, V. [Nuclear Science Research School, NSTRI, Tehran (Iran, Islamic Republic of)

    2014-11-15

    The reflectivity of sputtered Zirconium nitride films on glass substrate has been investigated in the spectral energy range of 0.8-6.1 eV as a function of deposition temperature varying between 373 and 723 K. Optical constants of the prepared films have been determined using the Drude analysis. Experimental results showed strong dependency of optical properties of the films, such as optical resistivity on the substrate temperature. The temperature increase of the substrate has shown an increase in both the plasmon frequency and electron scattering time. The electrical behavior of the films showed a good agreement between their optical and electrical resistivity. (orig.)

  13. Nanoripple formation on GaAs (001) surface by reverse epitaxy during ion beam sputtering at elevated temperature

    Energy Technology Data Exchange (ETDEWEB)

    Chowdhury, Debasree; Ghose, Debabrata, E-mail: debabrata1.ghose@gmail.com

    2016-11-01

    Highlights: • GaAs (001) surfaces are sputtered by 1 keV Ar{sup +} at sample temperature of 450 °C. • Highly ordered defect-free ripples develop at near-normal incidence angles (θ ≈ 0–25{sup 0}). • Concurrent sample rotation does not alter the ripple orientation with respect to the ion beam. • At grazing incidence angles anisotropic structure is formed. • Concurrent sample rotation shows that the structure orientation depends on the beam direction. - Abstract: Self-organized pattern formation by the process of reverse epitaxial growth has been investigated on GaAs (001) surfaces during 1 keV Ar{sup +} bombardment at target temperature of 450 °C for a wide range of incident angles. Highly ordered ripple formation driven by diffusion instability is evidenced at near normal incidence angles. Concurrent sample rotation shows that the ripple morphology and its orientation do not depend on the incident beam direction; rather they are determined by the symmetry of the crystal face.

  14. Direct growth of Ge quantum dots on a graphene/SiO2/Si structure using ion beam sputtering deposition.

    Science.gov (United States)

    Zhang, Z; Wang, R F; Zhang, J; Li, H S; Zhang, J; Qiu, F; Yang, J; Wang, C; Yang, Y

    2016-07-29

    The growth of Ge quantum dots (QDs) using the ion beam sputtering deposition technique has been successfully conducted directly on single-layer graphene supported by SiO2/Si substrate. The results show that the morphology and size of Ge QDs on graphene can be modulated by tuning the Ge coverage. Charge transfer behavior, i.e. doping effect in graphene has been demonstrated at the interface of Ge/graphene. Compared with that of traditional Ge dots grown on Si substrate, the positions of both corresponding photoluminescence (PL) peaks of Ge QDs/graphene hybrid structure undergo a large red-shift, which can probably be attributed to the lack of atomic intermixing and the existence of surface states in this hybrid material. According to first-principles calculations, the Ge growth on the graphene should follow the so-called Volmer-Weber mode instead of the Stranski-Krastanow one which is observed generally in the traditional Ge QDs/Si system. The calculations also suggest that the interaction between Ge and graphene layer can be enhanced with the decrease of the Ge coverage. Our results may supply a prototype for fabricating novel optoelectronic devices based on a QDs/graphene hybrid nanostructure.

  15. Spin pumping in ion-beam sputtered C o2FeAl /Mo bilayers: Interfacial Gilbert damping

    Science.gov (United States)

    Husain, Sajid; Kumar, Ankit; Barwal, Vineet; Behera, Nilamani; Akansel, Serkan; Svedlindh, Peter; Chaudhary, Sujeet

    2018-02-01

    The spin-pumping mechanism and associated interfacial Gilbert damping are demonstrated in ion-beam sputtered C o2FeAl (CFA)/Mo bilayer thin films employing ferromagnetic resonance spectroscopy. The dependence of the net spin-current transportation on Mo layer thickness, 0 to 10 nm, and the enhancement of the net effective Gilbert damping are reported. The experimental data have been analyzed using spin-pumping theory in terms of spin current pumped through the ferromagnet/nonmagnetic metal interface to deduce the real spin-mixing conductance and the spin-diffusion length, which are estimated to be 1.56 (±0.30 ) ×1019m-2 and 2.61 (±0.15 )nm , respectively. The damping constant is found to be 8.8 (±0.2 ) ×10-3 in the Mo(3.5 nm)-capped CFA(8 nm) sample corresponding to an ˜69 % enhancement of the original Gilbert damping 5.2 (±0.6 ) ×10-3 in the Al-capped CFA thin film. This is further confirmed by inserting the Cu dusting layer which reduces the spin transport across the CFA/Mo interface. The Mo layer thickness-dependent net spin-current density is found to lie in the range of 1 -4 MA m-2 , which also provides additional quantitative evidence of spin pumping in this bilayer thin-film system.

  16. Effect of heat treatment on properties of HfO2 film deposited by ion-beam sputtering

    Science.gov (United States)

    Liu, Huasong; Jiang, Yugang; Wang, Lishuan; Li, Shida; Yang, Xiao; Jiang, Chenghui; Liu, Dandan; Ji, Yiqin; Zhang, Feng; Chen, Deying

    2017-11-01

    The effects of atmosphere heat treatment on optical, stress, and microstructure properties of an HfO2 film deposited by ion-beam sputtering were systematically researched. The relationships among annealing temperature and refractive index, extinction coefficient, physical thickness, forbidden-band width, tape trailer width, Urbach energy, crystal phase structure, and stress were assessed. The results showed that 400 °C is the transformation point, and the microstructure of the HfO2 film changed from an amorphous into mixed-phase structure. Multistage phonons appeared on the HfO2 film, and the trends of the refractive index, extinction coefficient, forbidden-band width change, and Urbach energy shifted from decrease to increase. With the elevation of the annealing temperature, the film thickness increased monotonously, the compressive stress gradually turned to tensile stress, and the transformation temperature point for the stress was between 200 °C and 300 °C. Therefore, the change in the stress is the primary cause for the shifts in thin-film thickness.

  17. Control of surface ripple amplitude in ion beam sputtered polycrystalline cobalt films

    Energy Technology Data Exchange (ETDEWEB)

    Colino, Jose M., E-mail: josemiguel.colino@uclm.es [Institute of Nanoscience, Nanotechnology and Molecular Materials, University of Castilla-La Mancha, Campus de la Fabrica de Armas, Toledo 45071 (Spain); Arranz, Miguel A. [Facultad de Ciencias Quimicas, University of Castilla-La Mancha, Ciudad Real 13071 (Spain)

    2011-02-15

    We have grown both polycrystalline and partially textured cobalt films by magnetron sputter deposition in the range of thickness (50-200 nm). Kinetic roughening of the growing film leads to a controlled rms surface roughness values (1-6 nm) increasing with the as-grown film thickness. Ion erosion of a low energy 1 keV Ar+ beam at glancing incidence (80{sup o}) on the cobalt film changes the surface morphology to a ripple pattern of nanometric wavelength. The wavelength evolution at relatively low fluency is strongly dependent on the initial surface topography (a wavelength selection mechanism hereby confirmed in polycrystalline rough surfaces and based on the shadowing instability). At sufficiently large fluency, the ripple wavelength steadily increases on a coarsening regime and does not recall the virgin surface morphology. Remarkably, the use of a rough virgin surface makes the ripple amplitude in the final pattern can be controllably increased without affecting the ripple wavelength.

  18. Energy dependence of angular distributions of sputtered particles by ion-beam bombardment at normal incidence

    International Nuclear Information System (INIS)

    Matsuda, Yoshinobu; Ueda, Yasutoshi; Uchino, Kiichiro; Muraoka, Katsunori; Maeda, Mitsuo; Akazaki, Masanori; Yamamura, Yasunori.

    1986-01-01

    The angular distributions of sputtered Fe-atoms were measured using the laser fluorescence technique during Ar-ion bombardment for energies of 0.6, 1, 2 and 3 keV at normal incidence. The measured cosine distribution at 0.6 keV progressively deviated to an over-cosine distribution at higher energies, and at 3 keV the angular distribution was an overcosine distribution of about 20 %. The experimental results agree qualitatively with calculations by a recent computer simulation code, ACAT. The results are explained by the competition between surface scattering and the effects of primary knock-on atoms, which tend to make the angular distributions over-cosine and under-cosine, respectively. (author)

  19. Preparation and characterization of nanocrystalline ITO thin films on glass and clay substrates by ion-beam sputter deposition method

    International Nuclear Information System (INIS)

    Venkatachalam, S.; Nanjo, H.; Kawasaki, K.; Wakui, Y.; Hayashi, H.; Ebina, T.

    2011-01-01

    Nanocrystalline indium tin oxide (ITO) thin films were prepared on clay-1 (Clay-TPP-LP-SA), clay-2 (Clay-TPP-SA) and glass substrates using ion-beam sputter deposition method. X-ray diffraction (XRD) patterns showed that the as-deposited ITO films on both clay-1 and clay-2 substrates were a mixture of amorphous and polycrystalline. But the as-deposited ITO films on glass substrates were polycrystalline. The surface morphologies of as-deposited ITO/glass has smooth surface; in contrast, ITO/clay-1 has rough surface. The surface roughnesses of ITO thin films on glass and clay-1 substrate were calculated as 4.3 and 83 nm, respectively. From the AFM and SEM analyses, the particle sizes of nanocrystalline ITO for a film thickness of 712 nm were calculated as 19.5 and 20 nm, respectively. Optical study showed that the optical transmittance of ITO/clay-2 was higher than that of ITO/clay-1. The sheet resistances of as-deposited ITO/clay-1 and ITO/clay-2 were calculated as 76.0 and 63.0 Ω/□, respectively. The figure of merit value for as-deposited ITO/clay-2 (12.70 x 10 -3 /Ω) was also higher than that of ITO/clay-1 (9.6 x 10 -3 /Ω), respectively. The flexibilities of ITO/clay-1 and ITO/clay-2 were evaluated as 13 and 12 mm, respectively. However, the ITO-coated clay-2 substrate showed much better optical and electrical properties as well as flexibility as compared to clay-1.

  20. Depth profile investigation of the incorporated iron atoms during Kr{sup +} ion beam sputtering on Si (001)

    Energy Technology Data Exchange (ETDEWEB)

    Khanbabaee, B., E-mail: khanbabaee@physik.uni-siegen.de [Solid State Physics, University of Siegen, D-57068 Siegen (Germany); Arezki, B.; Biermanns, A. [Solid State Physics, University of Siegen, D-57068 Siegen (Germany); Cornejo, M.; Hirsch, D. [Leibniz-Institut für Oberflächenmodifizierung e. V. (IOM), Permoserstraße 15, D-04318 Leipzig (Germany); Lützenkirchen-Hecht, D. [Abteilung Physik, Bergische Universität Wuppertal, D-42097 Wuppertal (Germany); Frost, F. [Leibniz-Institut für Oberflächenmodifizierung e. V. (IOM), Permoserstraße 15, D-04318 Leipzig (Germany); Pietsch, U. [Solid State Physics, University of Siegen, D-57068 Siegen (Germany)

    2013-01-01

    We investigate the incorporation of iron atoms during nano-patterning of Si surfaces induced by 2 keV Kr{sup +} ion beam erosion under an off-normal incidence angle of 15°. Considering the low penetration depth of the ions, we have used X-ray reflectivity (XRR) and X-ray absorption near edge spectroscopy (XANES) under grazing-incidence angles in order to determine the depth profile and phase composition of the incorporated iron atoms in the near surface region, complemented by secondary ion mass spectrometry and atomic force microscopy. XRR analysis shows the accumulation of metallic atoms within a near surface layer of a few nanometer thickness. We verify that surface pattern formation takes place only when the co-sputtered Fe concentration exceeds a certain limit. For high Fe concentration, the ripple formation is accompanied by the enhancement of Fe close to the surface, whereas no Fe enhancement is found for low Fe concentration at samples with smooth surfaces. Modeling of the measured XANES spectra reveals the appearance of different silicide phases with decreasing Fe content from the top towards the volume. - Highlights: ► We investigate the incorporation of iron atoms during nano-patterning of Si surfaces. ► Pattern formation occurs when the areal density of Fe exceeds a certain threshold. ► X-ray reflectivity shows a layering at near surface due to incorporated Fe atoms. ► It is shown that the patterning is accompanied with the appearance of Fe-rich silicide.

  1. Development of an ion-beam sputtering system for depositing thin films and multilayers of alloys and compounds

    International Nuclear Information System (INIS)

    Gupta, Mukul; Gupta, Ajay; Phase, D.M.; Chaudhari, S.M.; Dasannacharya, B.A.

    2002-01-01

    An ion-beam sputtering (IBS) system has been designed and developed for preparing thin films and multilayers of various elements, alloys and compounds. The ion source used is a 3 cm diameter, hot-cathode Kaufman type 1.5 kV ion source. The system has been successfully tested with the deposition of various materials, and the deposition parameters were optimised for achieving good quality of thin films and multilayers. A systematic illustration of the versatility of the system to produce a variety of structures is done by depositing thin film of pure iron, an alloy film of Fe-Zr, a compound thin film of FeN, a multilayer of Fe-Ag and an isotopic multilayer of 57 FeZr/FeZr. Microstructural measurements on these films using X-ray and neutron reflectivity, atomic force microscopy (AFM), and X-ray diffraction are presented and discussed to reveal the quality of the microstructures obtained with the system. It is found that in general, the surface roughnesses of the film deposited by IBS are significantly smaller as compared to those for films deposited by e-beam evaporation. Further, the grain size of the IBS crystalline films is significantly refined as compared to the films deposited by e-beam evaporation. Grain refinement may be one of the reasons for reduced surface roughness. In the case of amorphous films, the roughness of the films does not increase appreciably beyond that of the substrate even after depositing thicknesses of several hundred angstroms

  2. Thermoelectric properties of bismuth antimony tellurium thin films through bilayer annealing prepared by ion beam sputtering deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Zhuang-hao [College of Physics Science and Technology, Shenzhen University, 518060 (China); Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China); Fan, Ping, E-mail: fanping308@126.com [College of Physics Science and Technology, Shenzhen University, 518060 (China); Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China); Luo, Jing-ting [College of Physics Science and Technology, Shenzhen University, 518060 (China); Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China); Cai, Xing-min; Liang, Guang-xing; Zhang, Dong-ping [College of Physics Science and Technology, Shenzhen University, 518060 (China); Ye, Fan [Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China)

    2014-07-01

    Bismuth antimony tellurium is one of the most important tellurium-based materials for high-efficient thermoelectric application. In this paper, ion beam sputtering was used to deposit Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} bilayer thin films on borosilicate substrates at room-temperature. Then the bismuth antimony tellurium thin films were synthesized via post thermal treatment of the Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} bilayer thin films. The effect of annealing temperature and compositions on the thermoelectric properties of the thin films was investigated. After the thin films were annealed from 150 °C to 350 °C for 1 h in the high vacuum condition, the Seebeck coefficient changed from a negative sign to a positive sign. The X-ray diffraction results showed that the synthesized tellurium-based thermoelectric thin film exhibited various alloys phases, which contributed different thermoelectricity conductivity to the synthesized thin film. The overall Seebeck coefficient of the synthesized thin film changed from negative sign to positive sign, which was due to the change of the primary phase of the tellurium-based materials at different annealing conditions. Similarly, the thermoelectric properties of the films were also associated with the grown phase. High-quality thin film with the Seebeck coefficient of 240 μV K{sup −1} and the power factor of 2.67 × 10{sup −3} Wm{sup −1} K{sup −2} showed a single Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} phase when the Sb/Te thin film sputtering time was 40 min. - Highlights: • Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} thermoelectric thin films synthesized via bilayer annealing • The film has single Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} phase with best thermoelectric performance. • The film has high thermoelectric properties comparable with other best results.

  3. Determining the sputter yields of molybdenum in low-index crystal planes via electron backscattered diffraction, focused ion beam and atomic force microscope

    Energy Technology Data Exchange (ETDEWEB)

    Huang, H.S., E-mail: 160184@mail.csc.com.tw [New Materials Research and Development Department, China Steel Corporation, 1 Chung Kang Road, Hsiao Kang, Kaohsiung 812, Taiwan, ROC (China); Chiu, C.H.; Hong, I.T.; Tung, H.C. [New Materials Research and Development Department, China Steel Corporation, 1 Chung Kang Road, Hsiao Kang, Kaohsiung 812, Taiwan, ROC (China); Chien, F.S.-S. [Department of Physics, Tunghai University, 1727, Sec. 4, Xitun Dist., Taiwan Boulevard, Taichung 407, Taiwan, ROC (China)

    2013-09-15

    Previous literature has used several monocrystalline sputtering targets with various crystalline planes, respectively, to investigate the variations of the sputter yield of materials in different crystalline orientations. This study presents a method to measure the sputtered yields of Mo for the three low-index planes (100), (110), and (111), through using an easily made polycrystalline target. The procedure was firstly to use electron backscattered diffraction to identify the grain positions of the three crystalline planes, and then use a focused ion beam to perform the micro-milling of each identified grain, and finally the sputter yields were calculated from the removed volumes, which were measured by atomic force microscope. Experimental results showed that the sputter yield of the primary orientations for Mo varied as Y{sub (110)} > Y{sub (100)} > Y{sub (111)}, coincidental with the ranking of their planar atomic packing densities. The concept of transparency of ion in the crystalline substance was applied to elucidate these results. In addition, the result of (110) orientation exhibiting higher sputter yield is helpful for us to develop a Mo target with a higher deposition rate for use in industry. By changing the deformation process from straight rolling to cross rolling, the (110) texture intensity of the Mo target was significantly improved, and thus enhanced the deposition rate. - Highlights: • We used EBSD, FIB and AFM to measure the sputter yields of Mo in low-index planes. • The sputter yield of the primary orientations for Mo varied as Y{sub (110)} > Y{sub (100)} > Y{sub (111)}. • The transparency of ion was used to elucidate the differences in the sputter yield. • We improved the sputter rate of polycrystalline Mo target by adjusting its texture.

  4. Laser damage resistance of hafnia thin films deposited by electron beam deposition, reactive low voltage ion plating, and dual ion beam sputtering

    International Nuclear Information System (INIS)

    Gallais, Laurent; Capoulade, Jeremie; Natoli, Jean-Yves; Commandre, Mireille; Cathelinaud, Michel; Koc, Cian; Lequime, Michel

    2008-01-01

    A comparative study is made of the laser damage resistance of hafnia coatings deposited on fused silica substrates with different technologies: electron beam deposition (from Hf or HfO2 starting material), reactive low voltage ion plating, and dual ion beam sputtering.The laser damage thresholds of these coatings are determined at 1064 and 355 nm using a nanosecond pulsed YAG laser and a one-on-one test procedure. The results are associated with a complete characterization of the samples: refractive index n measured by spectrophotometry, extinction coefficient k measured by photothermal deflection, and roughness measured by atomic force microscopy

  5. Ion-beam mixed ultra-thin cobalt suicide (CoSi2) films by cobalt sputtering and rapid thermal annealing

    Science.gov (United States)

    Kal, S.; Kasko, I.; Ryssel, H.

    1995-10-01

    The influence of ion-beam mixing on ultra-thin cobalt silicide (CoSi2) formation was investigated by characterizing the ion-beam mixed and unmixed CoSi2 films. A Ge+ ion-implantation through the Co film prior to silicidation causes an interface mixing of the cobalt film with the silicon substrate and results in improved silicide-to-silicon interface roughness. Rapid thermal annealing was used to form Ge+ ion mixed and unmixed thin CoSi2 layer from 10 nm sputter deposited Co film. The silicide films were characterized by secondary neutral mass spectroscopy, x-ray diffraction, tunneling electron microscopy (TEM), Rutherford backscattering, and sheet resistance measurements. The experi-mental results indicate that the final rapid thermal annealing temperature should not exceed 800°C for thin (micrographs of the ion-beam mixed and unmixed CoSi2 films reveals that Ge+ ion mixing (45 keV, 1 × 1015 cm-2) produces homogeneous silicide with smooth silicide-to-silicon interface.

  6. Ion beams in materials processing and analysis

    CERN Document Server

    Schmidt, Bernd

    2012-01-01

    This book covers ion beam application in modern materials research, offering the basics of ion beam physics and technology and a detailed account of the physics of ion-solid interactions for ion implantation, ion beam synthesis, sputtering and nano-patterning.

  7. The rf-power dependences of the deposition rate, the hardness and the corrosion-resistance of the chromium nitride film deposited by using a dual ion beam sputtering system

    International Nuclear Information System (INIS)

    Lim, Jongmin; Lee, Chongmu

    2006-01-01

    The hexavalent chromium used in chromium plating is so toxic that it is very hazardous to human body and possibly causes cancer in humans. Therefore, it is indispensable to develop an alternative deposition technique. Dependences of the deposition rate, the phases, the hardness, the surface roughness and the corrosion-resistance of CrN x deposited on the high speed steel substrate by using a dual ion beam sputtering system on the rf-power were investigated to see the feasibility of sputtering as an alternative technique for chromium plating. The dual ion beam sputtering system used in this study was designed in such a way as the primary argon ion beam and the secondary nitrogen ion beam are injected toward the target and the substrate, respectively so that the chromium atoms at the chromium target surface may not nearly react with nitrogen atoms. The hardness and the surface roughness were measured by a micro-Vicker's hardness tester and an atomic force microscope (AFM), respectively. X-ray diffraction analyses were performed to identify phases in the films. The deposition rate of CrN x depends more strongly upon the rf-power for argon ion beam than that for nitrogen ion beam. The hardness of the CrN x film is highest when the volume percent of the Cr 2 N phase in the film is highest. Amorphous films are obtained when the rf-power for nitrogen ion beam is much higher than that for argon ion beam. The CrN x film deposited by using the sputtering technique under the optimal condition provides corrosion-resistance comparable to that of the electroplated chromium

  8. Electrostatic mechanism of shaping the wave micro-relief on the surface of a semiconductor, sputtered by an ion beam

    International Nuclear Information System (INIS)

    Grigor'ev, A.I.

    2000-01-01

    The effect of the electric field formed due to the surface charging, is not accounted for in the weakly-developed theoretical models for the ordered micro-relief formation on the surface of a semiconductor under the impact of an ion beam. It is shown, that the problem on modeling the physical mechanism of forming the ordered wave micro-relief on the semiconductor surface under the impact of a high-energy ion beam may be interpreted as an electrostatic one [ru

  9. Spectral artefacts post sputter-etching and how to cope with them - A case study of XPS on nitride-based coatings using monoatomic and cluster ion beams

    Science.gov (United States)

    Lewin, Erik; Counsell, Jonathan; Patscheider, Jörg

    2018-06-01

    The issue of artefacts due to sputter-etching has been investigated for a group of AlN-based thin film materials with varying thermodynamical stability. Stability of the materials was controlled by alloying AlN with the group 14 elements Si, Ge or Sn in two different concentrations. The coatings were sputter-etched with monoatomic Ar+ with energies between 0.2 and 4.0 keV to study the sensitivity of the materials for sputter damage. The use of Arn+ clusters to remove an oxidised surface layer was also evaluated for a selected sample. The spectra were compared to pristine spectra obtained after in-vacuo sample transfer from the synthesis chamber to the analysis instrument. It was found that the all samples were affected by high energy (4 keV) Ar+ ions to varying degrees. The determining factors for the amount of observed damage were found to be the materials' enthalpy of formation, where a threshold value seems to exist at approximately -1.25 eV/atom (∼-120 kJ/mol atoms). For each sample, the observed amount of damage was found to have a linear dependence to the energy deposited by the ion beam per volume removed material. Despite the occurrence of sputter-damage in all samples, etching settings that result in almost artefact-free spectral data were found; using either very low energy (i.e. 200 eV) monoatomic ions, or an appropriate combination of ion cluster size and energy. The present study underlines that analysis post sputter-etching must be carried out with an awareness of possible sputter-induced artefacts.

  10. Effects of deposition and post-annealing conditions on electrical properties and thermal stability of TiAlN films by ion beam sputter deposition

    International Nuclear Information System (INIS)

    Lee, S.-Y.; Wang, S.-C.; Chen, J.-S.; Huang, J.-L.

    2006-01-01

    TiAlN films were deposited by ion beam sputter deposition (IBSD) using a Ti-Al (90/10) alloy target in a nitrogen atmosphere on thermal oxidized Si wafers. Effects of ion beam voltage, substrate temperature (T s ) and post-annealing conditions on electrical properties and oxidation resistance of TiAlN films were studied. According to the experimental results, the proper kinetic energy provided good crystallinity and a dense structure of the films. Because of their better crystallinity and predomination of (200) planes, TiAlN films deposited with 900 V at low T s (50 deg. C) have shown lower resistivity than those at high T s (250 deg. C). They also showed better oxidation resistance. If the beam voltage was too high, it caused some damage to the film surfaces, which caused poor oxidation resistance of films. When sufficient kinetic energy was provided by the beam voltage, the mobility of adatoms was too high due to their extra thermal energy, thus reducing the crystallinity and structure density of the films. A beam voltage of 900 V and a substrate temperature of 50 deg. C were the optimum deposition conditions used in this research. They provided good oxidation resistance and low electrical resistivity for IBSD TiAlN films

  11. Low-temperature growth of (2 1-bar 1-bar 0) ZnO nanofilm on NaCl (0 0 1) surface by ion beam sputtering

    International Nuclear Information System (INIS)

    Shen, Jung-Hsiung; Yeh, Sung-Wei; Huang, Hsing-Lu; Gan, Dershin

    2009-01-01

    ZnO nanofilm of the (2 1 -bar 1 -bar 0) surface was prepared by ion beam sputtering deposition. The nanofilm was prepared on NaCl (0 0 1) surface at 200 o C to produce nearly pure (2 1 -bar 1 -bar 0) ZnO texture and the orientation relationship was determined and the interface discussed. Transmission electron microscopy lattice images were used to find the interface formed between ZnO nanocrystals. The ZnO nanocrystals coalesced to form a straight (0 1 -bar 1 -bar 2) interface. The photoluminescence spectrum from the (2 1 -bar 1 -bar 0) ZnO surface showed only a near-band-edge UV emission peak.

  12. Effect of Annealing Temperature and Oxygen Flow in the Properties of Ion Beam Sputtered SnO-₂x Thin Films.

    Science.gov (United States)

    Wang, Chun-Min; Huang, Chun-Chieh; Kuo, Jui-Chao; Sahu, Dipti Ranjan; Huang, Jow-Lay

    2015-08-14

    Tin oxide (SnO 2-x ) thin films were prepared under various flow ratios of O₂/(O₂ + Ar) on unheated glass substrate using the ion beam sputtering (IBS) deposition technique. This work studied the effects of the flow ratio of O₂/(O₂ + Ar), chamber pressures and post-annealing treatment on the physical properties of SnO₂ thin films. It was found that annealing affects the crystal quality of the films as seen from both X-ray diffraction (XRD) and transmission electron microscopy (TEM) analysis. In addition, the surface RMS roughness was measured with atomic force microscopy (AFM). Auger electron spectroscopy (AES) analysis was used to obtain the changes of elemental distribution between tin and oxygen atomic concentration. The electrical property is discussed with attention to the structure factor.

  13. Realization of synaptic learning and memory functions in Y2O3 based memristive device fabricated by dual ion beam sputtering

    Science.gov (United States)

    Das, Mangal; Kumar, Amitesh; Singh, Rohit; Than Htay, Myo; Mukherjee, Shaibal

    2018-02-01

    Single synaptic device with inherent learning and memory functions is demonstrated based on a forming-free amorphous Y2O3 (yttria) memristor fabricated by dual ion beam sputtering system. Synaptic functions such as nonlinear transmission characteristics, long-term plasticity, short-term plasticity and ‘learning behavior (LB)’ are achieved using a single synaptic device based on cost-effective metal-insulator-semiconductor (MIS) structure. An ‘LB’ function is demonstrated, for the first time in the literature, for a yttria based memristor, which bears a resemblance to certain memory functions of biological systems. The realization of key synaptic functions in a cost-effective MIS structure would promote much cheaper synapse for artificial neural network.

  14. X-ray photoelectron spectroscopy investigation of ion beam sputtered indium tin oxide films as a function of oxygen pressure during deposition

    International Nuclear Information System (INIS)

    Nelson, A.J.; Aharoni, H.

    1987-01-01

    X-ray photoelectron spectroscopy analysis was performed on ion beam sputter deposited films of indium tin oxide as a function of O 2 partial pressure during deposition. The oxygen partial pressure was varied over the range of 2.5 x 10 -6 --4.0 x 10 -5 Torr. Changes in composition as well as in the deconvoluted In 3d 5 /sub // 2 , Sn 3d 5 /sub // 2 , and O 1s core level spectra were observed and correlated with the variation of the oxygen partial pressure during deposition. Results show that the films become increasingly stoichiometric as P/sub =/ is increased and that the excess oxygen introduced during deposition is bound predominantly to the Sn and has little or no effect on the In--O bonding

  15. Effect of Annealing Temperature and Oxygen Flow in the Properties of Ion Beam Sputtered SnO—2x Thin Films

    Directory of Open Access Journals (Sweden)

    Chun-Min Wang

    2015-08-01

    Full Text Available Tin oxide (SnO2—x thin films were prepared under various flow ratios of O2/(O2 + Ar on unheated glass substrate using the ion beam sputtering (IBS deposition technique. This work studied the effects of the flow ratio of O2/(O2 + Ar, chamber pressures and post-annealing treatment on the physical properties of SnO2 thin films. It was found that annealing affects the crystal quality of the films as seen from both X-ray diffraction (XRD and transmission electron microscopy (TEM analysis. In addition, the surface RMS roughness was measured with atomic force microscopy (AFM. Auger electron spectroscopy (AES analysis was used to obtain the changes of elemental distribution between tin and oxygen atomic concentration. The electrical property is discussed with attention to the structure factor.

  16. Growth stress buildup in ion beam sputtered Mo thin films and comparative study of stress relaxation upon thermal annealing or ion irradiation

    International Nuclear Information System (INIS)

    Debelle, A.; Abadias, G.; Michel, A.; Jaouen, C.; Pelosin, V.

    2007-01-01

    In an effort to address the understanding of the origin of growth stress in thin films deposited under very energetic conditions, the authors investigated the stress state and microstructure of Mo thin films grown by ion beam sputtering (IBS) as well as the stress relaxation processes taking place during subsequent thermal annealing or ion irradiation. Different sets of samples were grown by varying the IBS deposition parameters, namely, the energy E 0 and the flux j of the primary ion beam, the target-to-sputtering gas mass ratio M 1 /M 2 as well as film thickness. The strain-stress state was determined by x-ray diffraction using the sin 2 ψ method and data analyzed using an original stress model which enabled them to correlate information at macroscopic (in terms of stress) and microscopic (in terms of defect concentration) levels. Results indicate that these refractory metallic thin films are characterized by a high compressive growth stress (-2.6 to -3.8 GPa), resulting from the creation of a large concentration (up to ∼1.4%) of point or cluster defects, due to the atomic peening mechanism. The M 1 /M 2 mass ratio enables tuning efficiently the mean deposited energy of the condensing atoms; thus, it appears to be the more relevant deposition parameter that allows modifying both the microstructure and the stress level in a significant way. The growth stress comes out to be highly unstable. It can be easily relaxed either by postgrowth thermal annealing or ion irradiation in the hundred keV range at very low dose [<0.1 dpa (displacement per atom)]. It is shown that thermal annealing induces deleterious effects such as oxidation of the film surface, decrease of the film density, and in some cases adhesion loss at the film/substrate interface, while ion irradiation allows controlling the stress level without generating any macroscopic damage

  17. Stress, microstructure and evolution under ion irradiation in thin films grown by ion beam sputtering: modelling and application to interfacial effects in metallic multilayers

    International Nuclear Information System (INIS)

    Debelle, A.

    2006-09-01

    We have investigated the formation of the interfacial chemical mixing in Mo/Ni multilayers, and particularly the influence of ballistic effects during the growth. For this purpose, hetero-epitaxial b.c.c./f.c.c. Mo(110)/Ni(111) multilayers were grown by two deposition methods: thermal evaporation and direct ion beam sputtering. As a preliminary, an accurate description of the stress state in pure sputtered Mo thin films was required. Microstructural and stress state analyses were essentially carried out by X-ray diffraction, and ion irradiation was used as a powerful tool to control the stress level. We showed that thermal evaporated thin films exhibit a weak tensile growth stress (∼ 0.6 GPa) that can be accounted for by the grain boundary relaxation model, whereas sputtered thin films develop large compressive growth stress (- 2 to - 4 GPa). This latter results from the bombardment of the growing film by the energetic particles involved during the sputtering process (atomic peening phenomenon), which induces the formation of defects in the layers, generating volume distortions. We thus developed a stress model that includes a hydrostatic stress component to account for these volume strains. This model allowed us to determine the 'unstressed and free of defects lattice parameter' a 0 , solely linked to chemical effects. For epitaxial Mo layers, it was possible to separate coherency stress from growth stress due to their distinct kinetic evolution during ion irradiation. Therefore, the stress analysis enabled us to determine the a 0 values in Mo sub-layers of Mo/Ni superlattices. A tendency to the formation of an interfacial alloy is observed independently of the growth conditions, which suggests that thermodynamic forces favour the exchange mechanism. However, the extent of the intermixing effect is clearly enhanced by ballistic effects. (author)

  18. Sequential sputtered Co-HfO{sub 2} granular films

    Energy Technology Data Exchange (ETDEWEB)

    Chadha, M.; Ng, V.

    2017-03-15

    A systematic study of magnetic, magneto-transport and micro-structural properties of Co-HfO{sub 2} granular films fabricated by sequential sputtering is presented. We demonstrate reduction in ferromagnetic-oxide formation by using HfO{sub 2} as the insulting matrix. Microstructure evaluation of the films showed that the film structure consisted of discrete hcp-Co grains embedded in HfO{sub 2} matrix. Films with varying compositions were prepared and their macroscopic properties were studied. We correlate the variation in these properties to the variation in film microstructure. Our study shows that Co-HfO{sub 2} films with reduced cobalt oxide and varying properties can be prepared using sequential sputtering technique. - Highlights: • Co-HfO{sub 2} granular films were prepared using sequential sputtering. • A reduction in ferromagnetic-oxide formation is observed. • Co-HfO{sub 2} films display superparamagnetism and tunnelling magneto-resistance. • Varying macroscopic properties were achieved by changing film composition. • Applications can be found in moderate MR sensors and high –frequency RF devices.

  19. Development of high-polarization Fe/Ge neutron polarizing supermirror: Possibility of fine-tuning of scattering length density in ion beam sputtering

    Science.gov (United States)

    Maruyama, R.; Yamazaki, D.; Akutsu, K.; Hanashima, T.; Miyata, N.; Aoki, H.; Takeda, M.; Soyama, K.

    2018-04-01

    The multilayer structure of Fe/Si and Fe/Ge systems fabricated by ion beam sputtering (IBS) was investigated using X-ray and polarized neutron reflectivity measurements and scanning transmission electron microscopy with energy-dispersive X-ray analysis. The obtained result revealed that the incorporation of sputtering gas particles (Ar) in the Ge layer gives rise to a marked reduction in the neutron scattering length density (SLD) and contributes to the SLD contrast between the Fe and Ge layers almost vanishing for spin-down neutrons. Bundesmann et al. (2015) have shown that the implantation of primary Ar ions backscattered at the target is responsible for the incorporation of Ar particles and that the fraction increases with increasing ion incidence angle and increasing polar emission angle. This leads to a possibility of fine-tuning of the SLD for the IBS, which is required to realize a high polarization efficiency of a neutron polarizing supermirror. Fe/Ge polarizing supermirror with m = 5 fabricated under the same condition showed a spin-up reflectivity of 0.70 at the critical momentum transfer. The polarization was higher than 0.985 for the qz range where the correction for the polarization inefficiencies of the beamline works properly. The result of the polarized neutron reflectivity measurement suggests that the "magnetically-dead" layers formed at both sides of the Fe layer, together with the SLD contrast, play a critical role in determining the polarization performance of a polarizing supermirror.

  20. Kinetic Monte Carlo simulations compared with continuum models and experimental properties of pattern formation during ion beam sputtering

    International Nuclear Information System (INIS)

    Chason, E; Chan, W L

    2009-01-01

    Kinetic Monte Carlo simulations model the evolution of surfaces during low energy ion bombardment using atomic level mechanisms of defect formation, recombination and surface diffusion. Because the individual kinetic processes are completely determined, the resulting morphological evolution can be directly compared with continuum models based on the same mechanisms. We present results of simulations based on a curvature-dependent sputtering mechanism and diffusion of mobile surface defects. The results are compared with a continuum linear instability model based on the same physical processes. The model predictions are found to be in good agreement with the simulations for predicting the early-stage morphological evolution and the dependence on processing parameters such as the flux and temperature. This confirms that the continuum model provides a reasonable approximation of the surface evolution from multiple interacting surface defects using this model of sputtering. However, comparison with experiments indicates that there are many features of the surface evolution that do not agree with the continuum model or simulations, suggesting that additional mechanisms are required to explain the observed behavior.

  1. Thermally induced formation of SiC nanoparticles from Si/C/Si multilayers deposited by ultra-high-vacuum ion beam sputtering

    International Nuclear Information System (INIS)

    Chung, C-K; Wu, B-H

    2006-01-01

    A novel approach for the formation of SiC nanoparticles (np-SiC) is reported. Deposition of Si/C/Si multilayers on Si(100) wafers by ultra-high-vacuum ion beam sputtering was followed by thermal annealing in vacuum for conversion into SiC nanoparticles. The annealing temperature significantly affected the size, density, and distribution of np-SiC. No nanoparticles were formed for multilayers annealed at 500 0 C, while a few particles started to appear when the annealing temperature was increased to 700 0 C. At an annealing temperature of 900 0 C, many small SiC nanoparticles, of several tens of nanometres, surrounding larger submicron ones appeared with a particle density approximately 16 times higher than that observed at 700 0 C. The higher the annealing temperature was, the larger the nanoparticle size, and the higher the density. The higher superheating at 900 0 C increased the amount of stable nuclei, and resulted in a higher particle density compared to that at 700 0 C. These particles grew larger at 900 0 C to reduce the total surface energy of smaller particles due to the higher atomic mobility and growth rate. The increased free energy of stacking defects during particle growth will limit the size of large particles, leaving many smaller particles surrounding the large ones. A mechanism for the np-SiC formation is proposed in this paper

  2. Ion beam analysis, corrosion resistance and nanomechanical properties of TiAlCN/CN{sub x} multilayer grown by reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Alemón, B.; Flores, M. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, J. Guadalupe Zuno 48, Los Belenes, Zapopan, Jal. 45101 (Mexico); Canto, C. [Instituto de Física, UNAM, Avenida de la Investigación S/N, Coyoacán, Mexico, DF 04510 (Mexico); Andrade, E., E-mail: andrade@fisica.unam.mx [Instituto de Física, UNAM, Avenida de la Investigación S/N, Coyoacán, Mexico, DF 04510 (Mexico); Lucio, O.G. de [Instituto de Física, UNAM, Avenida de la Investigación S/N, Coyoacán, Mexico, DF 04510 (Mexico); Rocha, M.F. [ESIME-Z, Instituto Politécnico Nacional, ALM Zacatenco, Mexico, DF 07738 (Mexico); Broitman, E. [Thin Films Physics Division, IFM, Linköping University, SE-58183 Linköping (Sweden)

    2014-07-15

    A novel TiAlCN/CN{sub x} multilayer coating, consisting of nine TiAlCN/CN{sub x} periods with a top layer 0.5 μm of CN{sub x}, was designed to enhance the corrosion resistance of CoCrMo biomedical alloy. The multilayers were deposited by dc and RF reactive magnetron sputtering from Ti{sub 0.5}Al{sub 0.5} and C targets respectively in a N{sub 2}/Ar plasma. The corrosion resistance and mechanical properties of the multilayer coatings were analyzed and compared to CoCrMo bulk alloy. Ion beam analysis (IBA) and X-ray diffraction tests were used to measure the element composition profiles and crystalline structure of the films. Corrosion resistance was evaluated by means of potentiodynamic polarization measurements using simulated body fluid (SBF) at typical body temperature and the nanomechanical properties of the multilayer evaluated by nanoindentation tests were analyzed and compared to CoCrMo bulk alloy. It was found that the multilayer hardness and the elastic recovery are higher than the substrate of CoCrMo. Furthermore the coated substrate shows a better general corrosion resistance than that of the CoCrMo alloy alone with no observation of pitting corrosion.

  3. Low temperature growth of Co{sub 2}MnSi films on diamond semiconductors by ion-beam assisted sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Nishiwaki, M.; Ueda, K., E-mail: k-ueda@numse.nagoya-u.ac.jp; Asano, H. [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

    2015-05-07

    High quality Schottky junctions using Co{sub 2}MnSi/diamond heterostructures were fabricated. Low temperature growth at ∼300–400 °C by using ion-beam assisted sputtering (IBAS) was necessary to obtain abrupt Co{sub 2}MnSi/diamond interfaces. Only the Co{sub 2}MnSi films formed at ∼300–400 °C showed both saturation magnetization comparable to the bulk values and large negative anisotropic magnetoresistance, which suggests half-metallic nature of the Co{sub 2}MnSi films, of ∼0.3% at 10 K. Schottky junctions formed using the Co{sub 2}MnSi films showed clear rectification properties with rectification ratio of more than 10{sup 7} with Schottky barrier heights of ∼0.8 eV and ideality factors (n) of ∼1.2. These results indicate that Co{sub 2}MnSi films formed at ∼300–400 °C by IBAS are a promising spin source for spin injection into diamond semiconductors.

  4. Ion beam sputter deposited TiAlN films for metal-insulator-metal (Ba,Sr)TiO{sub 3} capacitor application

    Energy Technology Data Exchange (ETDEWEB)

    Lee, S.-Y. [Department of Materials Science and Engineering, National Cheng Kung University, No. 1, Ta-Hsueh Road, Tainan, Taiwan (China); Wang, S.-C. [Department of Mechanical Engineering, Southern Taiwan University of Technology, No. 1, Nantai St, Yung-Kang City, Tainan, Taiwan (China); Chen, J.-S. [Department of Materials Science and Engineering, National Cheng Kung University, No. 1, Ta-Hsueh Road, Tainan, Taiwan (China); Huang, J.-L. [Department of Materials Science and Engineering, National Cheng Kung University, No. 1, Ta-Hsueh Road, Tainan, Taiwan (China)], E-mail: jlh888@mail.ncku.edu.tw

    2008-09-01

    The present study evaluated the feasibility of TiAlN films deposited using the ion beam sputter deposition (IBSD) method for metal-insulator-metal (MIM) (Ba,Sr)TiO{sub 3} (BST) capacitors. The BST films were crystallized at temperatures above 650 deg. C. TiAlN films deposited using the IBSD method were found having smooth surface and low electrical resistivity at high temperature conditions. TiAlN films showed a good diffusion barrier property against BST components. The J-E (current density-electric field) characteristics of Al/BST/TiAlN capacitors were good, with a high break down electric field of {+-} 2.5 MV/cm and a leakage current density of about 1 x 10{sup -5} A/cm{sup 2} at an applied field of {+-} 0.5 MV/cm. Thermal stress and lateral oxidation that occurred at the interface damaged the capacitor stacking structure. Macro holes that dispersed on the films resulted in higher leakage current and inconsistent J-E characteristics. Vacuum annealing with lower heating rate and furnace cooling, and a Ti-Al adhesion layer between TiAlN and the SiO{sub 2}/Si substrate can effectively minimize the stress effect. TiAlN film deposited using IBSD can be considered as a potential electrode and diffusion barrier material for MIM BST capacitors.

  5. ITO films realized at room-temperature by ion beam sputtering for high-performance flexible organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Lucas, B.; Rammal, W.; Moliton, A. [Limoges Univ., Faculte des Sciences et Techniques, CNRS, UMR 6172, Institut de Recherche XLIM, Dept. MINACOM, 87 - Limoges (France)

    2006-06-15

    Indium-tin oxide (ITO) thin layers are obtained by an IBS (Ion Beam Sputtering) deposition process. We elaborated ITO films on flexible substrates of polyethylene terephthalate (PET), under soft conditions of low temperatures and fulfilling the requirements of fabrication processes of the organic optoelectronic components. With a non thermally activated (20 Celsius degrees) ITO deposition assisted by an oxygen flow (1 cm{sup 3}/min), we got an optical transmittance of 90% in the visible range, a resistivity around 10{sup -3} {omega}.cm and a surface roughness lower than 1.5 mm. Thus we realized flexible organic light-emitting diodes (FOLEDs) with good performances: a maximum luminance of 12000 cd/m{sup 2} at a voltage of 19 V and a maximum luminous power efficiency around 1 lm/W at a voltage of 10 V (or a maximum current efficiency of 4 cd/A at 14 V) for the (PET(50 {mu}m) / ITO(200 nm) / TPD(40 nm) / Alq3(60 nm) / Ca / Al) structure. (authors)

  6. Two-dimensional electron gases in MgZnO/ZnO and ZnO/MgZnO/ZnO heterostructures grown by dual ion beam sputtering

    Science.gov (United States)

    Singh, Rohit; Arif Khan, Md; Sharma, Pankaj; Than Htay, Myo; Kranti, Abhinav; Mukherjee, Shaibal

    2018-04-01

    This work reports on the formation of high-density (~1013-1014 cm-2) two-dimensional electron gas (2DEG) in ZnO-based heterostructures, grown by a dual ion beam sputtering system. We probe 2DEG in bilayer MgZnO/ZnO and capped ZnO/MgZnO/ZnO heterostructures utilizing MgZnO barrier layers with varying thickness and Mg content. The effect of the ZnO cap layer thickness on the ZnO/MgZnO/ZnO heterostructure is also studied. Hall measurements demonstrate that the addition of a 5 nm ZnO cap layer results in an enhancement of the 2DEG density by about 1.5 times compared to 1.11 × 1014 cm-2 for the uncapped bilayer heterostructure with the same 30 nm barrier thickness and 30 at.% Mg composition in the barrier layer. From the low-temperature Hall measurement, the sheet carrier concentration and mobility are both found to be independent of the temperature. The capacitance-voltage measurement suggests a carrier density of ~1020 cm-3, confined in 2DEG at the MgZnO/ZnO heterointerface. The results presented are significant for the optimization of 2DEG for the eventual realization of cost-effective and large-area MgZnO/ZnO-based high-electron-mobility transistors.

  7. The effect of substrate bias voltages on impact resistance of CrAlN coatings deposited by modified ion beam enhanced magnetron sputtering

    Science.gov (United States)

    Chunyan, Yu; Linhai, Tian; Yinghui, Wei; Shebin, Wang; Tianbao, Li; Bingshe, Xu

    2009-01-01

    CrAlN coatings were deposited on silicon and AISI H13 steel substrates using a modified ion beam enhanced magnetron sputtering system. The effect of substrate negative bias voltages on the impact property of the CrAlN coatings was studied. The X-ray diffraction (XRD) data show that all CrAlN coatings were crystallized in the cubic NaCl B1 structure, with the (1 1 1), (2 0 0) (2 2 0) and (2 2 2) diffraction peaks observed. Two-dimensional surface morphologies of CrAlN coatings were investigated by atomic force microscope (AFM). The results show that with increasing substrate bias voltage the coatings became more compact and denser, and the microhardness and fracture toughness of the coatings increased correspondingly. In the dynamic impact resistance tests, the CrAlN coatings displayed better impact resistance with the increase of bias voltage, due to the reduced emergence and propagation of the cracks in coatings with a very dense structure and the increase of hardness and fracture toughness in coatings.

  8. Ion beam sputter deposited TiAlN films for metal-insulator-metal (Ba,Sr)TiO3 capacitor application

    International Nuclear Information System (INIS)

    Lee, S.-Y.; Wang, S.-C.; Chen, J.-S.; Huang, J.-L.

    2008-01-01

    The present study evaluated the feasibility of TiAlN films deposited using the ion beam sputter deposition (IBSD) method for metal-insulator-metal (MIM) (Ba,Sr)TiO 3 (BST) capacitors. The BST films were crystallized at temperatures above 650 deg. C. TiAlN films deposited using the IBSD method were found having smooth surface and low electrical resistivity at high temperature conditions. TiAlN films showed a good diffusion barrier property against BST components. The J-E (current density-electric field) characteristics of Al/BST/TiAlN capacitors were good, with a high break down electric field of ± 2.5 MV/cm and a leakage current density of about 1 x 10 -5 A/cm 2 at an applied field of ± 0.5 MV/cm. Thermal stress and lateral oxidation that occurred at the interface damaged the capacitor stacking structure. Macro holes that dispersed on the films resulted in higher leakage current and inconsistent J-E characteristics. Vacuum annealing with lower heating rate and furnace cooling, and a Ti-Al adhesion layer between TiAlN and the SiO 2 /Si substrate can effectively minimize the stress effect. TiAlN film deposited using IBSD can be considered as a potential electrode and diffusion barrier material for MIM BST capacitors

  9. The preparation of Zn-ferrite epitaxial thin film from epitaxial Fe3O4:ZnO multilayers by ion beam sputtering deposition

    International Nuclear Information System (INIS)

    Su, Hui-Chia; Dai, Jeng-Yi; Liao, Yen-Fa; Wu, Yu-Han; Huang, J.C.A.; Lee, Chih-Hao

    2010-01-01

    A new method to grow a well-ordered epitaxial ZnFe 2 O 4 thin film on Al 2 O 3 (0001) substrate is described in this work. The samples were made by annealing the ZnO/Fe 3 O 4 multilayer which was grown with low energy ion beam sputtering deposition. Both the Fe 3 O 4 and ZnO layers were found grown epitaxially at low temperature and an epitaxial ZnFe 2 O 4 thin film was formed after annealing at 1000 o C. X-ray diffraction shows the ZnFe 2 O 4 film is grown with an orientation of ZnFe 2 O 4 (111)//Al 2 O 3 (0001) and ZnFe 2 O 4 (1-10)//Al 2 O 3 (11-20). X-ray absorption spectroscopy studies show that Zn 2+ atoms replace the tetrahedral Fe 2+ atoms in Fe 3 O 4 during the annealing. The magnetic properties measured by vibrating sample magnetometer show that the saturation magnetization of ZnFe 2 O 4 grown from ZnO/Fe 3 O 4 multilayer reaches the bulk value after the annealing process.

  10. Domain structure and magnetic properties of epitaxial SrRuO sub 3 films grown on SrTiO sub 3 (100) substrates by ion beam sputtering

    CERN Document Server

    Oh, S H

    2000-01-01

    The domain structure of epitaxial SrRuO sub 3 thin films grown on SrTiO sub 3 (100) substrates by using ion beam sputtering has been investigated with transmission electron microscopy (TEM) and X-ray diffraction (XRD). The SrRuO sub 3 films grown in the present study revealed a unique cube-on-cube epitaxial relationship, i.e., (100) sub S sub R sub O ll (100) sub S sub T sub O , [010] sub S sub R sub O ll [101] sub S sub T sub O , prevailing with a cubic single-domain structure. The cubic SrRuO sub 3 thin films that were inherently with free from RuO sub 6 octahedron tilting exhibited higher resistivity with suppressed magnetic properties. The Curie temperature of the thin films was suppressed by 60 K from 160 K for the bulk specimen, and the saturation magnetic moment was reduced by a significant amount. The tetragonal distortion of the SrRuO sub 3 thin films due to coherent growth with the substrate seemed to result in a strong magnetic anisotropy.

  11. Production of rare-earth atomic negative ion beams in a cesium-sputter-type negative ion source

    International Nuclear Information System (INIS)

    Davis, V.T.; Covington, A.M.; Duvvuri, S.S.; Kraus, R.G.; Emmons, E.D.; Kvale, T.J.; Thompson, J.S.

    2007-01-01

    The desire to study negative ion structure and negative ion-photon interactions has spurred the development of ion sources for use in research and industry. The many different types of negative ion sources available today differ in their characteristics and abilities to produce anions of various species. Thus the importance of choosing the correct type of negative ion source for a particular research or industrial application is clear. In this study, the results of an investigation on the production of beams composed of negatively-charged rare-earth ions from a cylindrical-cathode-geometry, cesium-sputter-type negative ion source are presented. Beams of atomic anions have been observed for most of the first-row rare-earth elements, with typical currents ranging from hundreds of picoamps to several nanoamps

  12. High energy (MeV) ion beam modifications of sputtered MoS2 coatings on sapphire

    International Nuclear Information System (INIS)

    Bhattacharya, R.S.; Rai, A.K.; Erdemir, A.

    1991-01-01

    The present article reports on the results of our investigations of high-energy (MeV) ion irradiation on the microstructural and tribological properties of dc magnetron sputtered MoS 2 films. Films of thicknesses 500-7500 A were deposited on NaCl, Si and sapphire substrates and subsequently ion irradiated by 2 MeV Ag + ions at a dose of 5x10 15 cm -2 . Scanning and transmission electron microscopy. Rutherford backscattering and X-ray diffraction techniques were utilized to study the structural, morphological and compositional changes of the film due to ion irradiation. The friction coefficient and sliding life were determined by pin-on-disc tests. Both as-deposited and ion-irradiated films were found to be amorphous having a stoichiometry of MoS 1.8 . A low friction coefficient in the range 0.03-0.04 was measured for both as-deposited and ion-irradiated films. However, the sliding life of ion-irradiated film was found to increase more than tenfold compared to as-deposited films indicating improved bonding at the interface. (orig.)

  13. Effects of nitrogen gas ratio on the structural and corrosion properties of ZrN thin films grown on biodegradable magnesium alloy by ion-beam sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Kiahosseini, Seyed Rahim [Islamic Azad University, Department of Engineering, Damghan Branch, Damghan (Iran, Islamic Republic of); Mojtahedzadeh Larijani, Majid [Nuclear Sciences and Technology Institute, Radiation Application Research School, Tehran (Iran, Islamic Republic of)

    2017-12-15

    Studies on the corrosion resistance of magnesium alloys, which are widely applied as biomaterials, have increased in recent years. In this work, zirconium nitride (ZrN) coatings were deposited on AZ91 magnesium alloy through ion-beam sputtering at 473 K with 0.3, 0.4, 0.5, and 0.6 nitrogen proportions [F(N{sub 2})] in ionized gas. X-ray diffraction, profilometry, hardness tests, scanning electron microscopy, and potentiodynamic polarization techniques were used to analyze the structure, thickness, adhesion, microstructure, and corrosion resistance of coated samples, respectively. Results showed that the (111) crystalline orientation dominated in all coatings. Williamson-Hall technique revealed that the crystallite size of ZrN films decreased from 73 to 20 nm with increasing F(N{sub 2}), and compressive microstrain increased from 0.004 to 0.030. Film thicknesses were inversely correlated with N{sub 2} amount and significantly decreased from 1.7 to 0.8 μm. The maximum dP/dr ratio, a dependent factor of adhesion, was 0.04 kg/cm for the film deposited under the F(N{sub 2}) value of 0.5. The corrosion potential of coated samples was not significantly different from that of uncoated AZ91. Under the F(N{sub 2}) value of 0.6, corrosion current density slightly decreased from 14 to 9.7 μA/cm{sup 2} and significantly increased to 13.5 μA/cm{sup 2}. Results indicated that ZrN film deposited under the F(N{sub 2}) value of 0.5 showed high adhesion and corrosion resistance. (orig.)

  14. Effects of nitrogen gas ratio on the structural and corrosion properties of ZrN thin films grown on biodegradable magnesium alloy by ion-beam sputtering

    Science.gov (United States)

    Kiahosseini, Seyed Rahim; Mojtahedzadeh Larijani, Majid

    2017-12-01

    Studies on the corrosion resistance of magnesium alloys, which are widely applied as biomaterials, have increased in recent years. In this work, zirconium nitride (ZrN) coatings were deposited on AZ91 magnesium alloy through ion-beam sputtering at 473 K with 0.3, 0.4, 0.5, and 0.6 nitrogen proportions [F(N2)] in ionized gas. X-ray diffraction, profilometry, hardness tests, scanning electron microscopy, and potentiodynamic polarization techniques were used to analyze the structure, thickness, adhesion, microstructure, and corrosion resistance of coated samples, respectively. Results showed that the (111) crystalline orientation dominated in all coatings. Williamson-Hall technique revealed that the crystallite size of ZrN films decreased from 73 to 20 nm with increasing F(N2), and compressive microstrain increased from 0.004 to 0.030. Film thicknesses were inversely correlated with N2 amount and significantly decreased from 1.7 to 0.8 µm. The maximum d P/d r ratio, a dependent factor of adhesion, was 0.04 kg/cm for the film deposited under the F(N2) value of 0.5. The corrosion potential of coated samples was not significantly different from that of uncoated AZ91. Under the F(N2) value of 0.6, corrosion current density slightly decreased from 14 to 9.7 µA/cm2 and significantly increased to 13.5 µA/cm2. Results indicated that ZrN film deposited under the F(N2) value of 0.5 showed high adhesion and corrosion resistance.

  15. Tool steel ion beam assisted nitrocarburization

    International Nuclear Information System (INIS)

    Zagonel, L.F.; Alvarez, F.

    2007-01-01

    The nitrocarburization of the AISI-H13 tool steel by ion beam assisted deposition is reported. In this technique, a carbon film is continuously deposited over the sample by the ion beam sputtering of a carbon target while a second ion source is used to bombard the sample with low energy nitrogen ions. The results show that the presence of carbon has an important impact on the crystalline and microstructural properties of the material without modification of the case depth

  16. Ion-beam texturing of uniaxially textured Ni films

    International Nuclear Information System (INIS)

    Park, S.J.; Norton, D.P.; Selvamanickam, Venkat

    2005-01-01

    The formation of biaxial texture in uniaxially textured Ni thin films via Ar-ion irradiation is reported. The ion-beam irradiation was not simultaneous with deposition. Instead, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux, which differs from conventional ion-beam-assisted deposition. The uniaxial texture is established via a nonion beam process, with the in-plane texture imposed on the uniaxial film via ion beam bombardment. Within this sequential ion beam texturing method, grain alignment is driven by selective etching and grain overgrowth

  17. Processing of La/sub 1.8/Sr/sub 0.2/CuO4 and YBa2Cu3O7 superconducting thin films by dual-ion-beam sputtering

    International Nuclear Information System (INIS)

    Madakson, P.; Cuomo, J.J.; Yee, D.S.; Roy, R.A.; Scilla, G.

    1988-01-01

    High quality La/sub 1.8/Sr/sub 0.2/CuO 4 and YBa 2 Cu 3 O 7 superconducting thin films, with zero resistance at 88 K, have been made by dual-ion-beam sputtering of metal and oxide targets at elevated temperatures. The films are about 1.0 μm thick and are single phase after annealing. The substrates investigated are Nd-YAP, MgO, SrF 2 , Si, CaF 2 , ZrO 2 -9% Y 2 O 3 , BaF 2 , Al 2 O 3 , and SrTiO 3 . Characterization of the films was carried out using Rutherford backscattering spectroscopy, resistivity measurements, transmission electron microscopy, x-ray diffraction, and secondary ion mass spectroscopy. Substrate/film interaction was observed in every case. This generally involves diffusion of the substrate into the film, which is accompanied by, for example, the replacement of Ba by Sr in the YBa 2 Cu 2 O 7 structure, in the case of SrTiO 3 substrate. The best substrates were those that did not significantly diffuse into the film and which did not react chemically with the film. In general, the superconducting transition temperature is found to depend on substrate temperature and ion beam energy, film composition, annealing conditions, and the nature and the magnitude of the substrate/film interaction

  18. Study of magnetic properties and relaxation in amorphous Fe73.9Nb3.1Cu0.9Si13.2B8.9 thin films produced by ion beam sputtering

    International Nuclear Information System (INIS)

    Celegato, F.; Coiesson, M.; Magni, A.; Tiberto, P.; Vinai, F.; Kane, S. N.; Modak, S. S.; Gupta, A.; Sharma, P.

    2007-01-01

    Amorphous Fe 73.9 Nb 3.1 Cu 0.9 Si 13.2 B 8.9 thin films have been produced by ion beam sputtering with two different beam energies (500 and 1000 eV). Magnetic measurements indicate that the samples display a uniaxial magnetic anisotropy, especially for samples prepared with the lower beam energy. Magnetization relaxation has been measured on both films with an alternating gradient force magnetometer and magneto-optical Kerr effect. Magnetization relaxation occurs on time scales of tens of seconds and can be described with a single stretched exponential function. Relaxation intensity turns out to be higher when measured along the easy magnetization axis

  19. In situ study of interface reactions of ion beam sputter deposited (Ba0.5Sr0.5)TiO3 films on Si, SiO2, and Ir

    International Nuclear Information System (INIS)

    Gao, Y.; Mueller, A.H.; Irene, E.A.; Auciello, O.; Krauss, A.; Schultz, J.A.

    1999-01-01

    (Ba 0.5 ,Sr 0.5 )TiO 3 (BST) thin films were deposited on MgO, Si, SiO 2 and Ir surfaces by ion beam sputter deposition in oxygen at 700 degree C. In situ spectroscopic ellipsometry (SE) has been used to investigate the evolution of the BST films on different surfaces during both deposition and postannealing processes. First, the optical constants of the BST films in the photon energy range of 1.5 - 4.5 eV were determined by SE analysis on crystallized BST films deposited on MgO single crystal substrates. The interfaces in BST/Si and BST/SiO 2 /Si structure were examined by SE and Auger electron spectroscopy depth profiles. Subcutaneous oxidation in the BST/Ir structure was observed by in situ SE during both ion beam sputter deposition and postdeposition annealing in oxygen at 700 degree C. A study of the thermal stability of the Ir/TiN/SiO 2 /Si structure in oxygen at 700 degree C was carried out using in situ SE. The oxidation of Ir was confirmed by x-ray diffraction. The surface composition and morphology evolution after oxidation were investigated by time of flight mass spectroscopy of recoiled ions (TOF-MSRI) and atomic force microscopy. It has been found that Ti from the underlying TiN barrier layer diffused through the Ir layer onto the surface and thereupon became oxidized. It was also shown that the surface roughness increases with increasing oxidation time. The implications of the instability of Ir/TiN/SiO 2 /Si structure on the performance of capacitor devices based on this substrate are discussed. It has been shown that a combination of in situ SE and TOF-MSRI provides a powerful methodology for in situ monitoring of complex oxide film growth and postannealing processes. copyright 1999 American Vacuum Society

  20. Ion Beam Propulsion Study

    Science.gov (United States)

    2008-01-01

    The Ion Beam Propulsion Study was a joint high-level study between the Applied Physics Laboratory operated by NASA and ASRC Aerospace at Kennedy Space Center, Florida, and Berkeley Scientific, Berkeley, California. The results were promising and suggested that work should continue if future funding becomes available. The application of ion thrusters for spacecraft propulsion is limited to quite modest ion sources with similarly modest ion beam parameters because of the mass penalty associated with the ion source and its power supply system. Also, the ion source technology has not been able to provide very high-power ion beams. Small ion beam propulsion systems were used with considerable success. Ion propulsion systems brought into practice use an onboard ion source to form an energetic ion beam, typically Xe+ ions, as the propellant. Such systems were used for steering and correction of telecommunication satellites and as the main thruster for the Deep Space 1 demonstration mission. In recent years, "giant" ion sources were developed for the controlled-fusion research effort worldwide, with beam parameters many orders of magnitude greater than the tiny ones of conventional space thruster application. The advent of such huge ion beam sources and the need for advanced propulsion systems for exploration of the solar system suggest a fresh look at ion beam propulsion, now with the giant fusion sources in mind.

  1. Ion beam monitoring

    International Nuclear Information System (INIS)

    McKinney, C.R.

    1980-01-01

    An ion beam analyzer is specified, having an ion source for generating ions of a sample to be analyzed, means for extracting the sample ions, means for focusing the sample ions into a beam, separation means positioned along the ion beam for selectively deflecting species of ions, and means for detecting the selected species of ions. According to the specification, the analyzer further comprises (a) means for disabling at least a portion of the separation means, such that the ion beam from the source remains undeflected; (b) means located along the path of the undeflected ion beam for sensing the sample ions; and (c) enabling means responsive to the sensing means for automatically re-enabling the separation means when the sample ions reach a predetermined intensity level. (author)

  2. Ion beam diagnosis

    International Nuclear Information System (INIS)

    Strehl, P.

    1994-04-01

    This report is an introduction to ion beam diagnosis. After a short description of the most important ion beam parameters measurements of the beam current by means of Faraday cups, calorimetry, and beam current transformers and measurements of the beam profile by means of viewing screens, profile grids and scanning devices, and residual gas ionization monitors are described. Finally measurements in the transverse and longitudinal phase space are considered. (HSI)

  3. A novel approach for the characterization of a bilayer of phenyl-c71-butyric-acid-methyl ester and pentacene using ultraviolet photoemission spectroscopy and argon gas cluster ion beam sputtering process

    International Nuclear Information System (INIS)

    Yun, Dong-Jin; Chung, JaeGwan; Jung, Changhoon; Chung, Yeonji; Kim, SeongHeon; Lee, Seunghyup; Kim, Ki-Hong; Han, Hyouksoo; Park, Gyeong-Su; Park, SungHoon

    2013-01-01

    The material arrangement and energy level alignment of an organic bilayer comprising of phenyl-c71-butyric-acid-methyl ester (PCBM-71) and pentacene were studied using ultraviolet photoelectron spectroscopy (UPS) and the argon gas cluster ion beam (GCIB) sputtering process. Although there is a small difference in the full width at half maximum of the carbon C 1s core level peaks and differences in the oxygen O 1s core levels of an X-ray photoemission spectroscopy spectra, these differences are insufficient to clearly distinguish between PCBM-71 and pentacene layers and to classify the interface and bulk regions. On the other hand, the valence band structures in the UPS spectra contain completely distinct configurations for the PCBM-71 and pentacene layers, even when they have similar atomic compositions. According to the valence band structures of the PCBM-71/pentacene/electrodes, the highest unoccupied molecular orbital (HOMO) region of pentacene is at least 0.8 eV closer to the Fermi level than that of PCBM-71 and it does not overlap with any of the chemical states in the valence band structure of PCBM-71. Therefore, by just following the variations in the area of the HOMO region of pentacene, the interface/bulk regions of the PCBM/pentacene layers were distinctly categorized. Besides, the variation of valence band structures as a function of the Ar GCIB sputtering time fully corroborated with the surface morphologies observed in the atomic force microscope images. In summary, we believe that the novel approach, which involves UPS analysis in conjunction with Ar GCIB sputtering, can be one of the best methods to characterize the material distribution and energy level alignments of stacks of organic layers

  4. A novel approach for the characterization of a bilayer of phenyl-c71-butyric-acid-methyl ester and pentacene using ultraviolet photoemission spectroscopy and argon gas cluster ion beam sputtering process

    Energy Technology Data Exchange (ETDEWEB)

    Yun, Dong-Jin; Chung, JaeGwan; Jung, Changhoon; Chung, Yeonji; Kim, SeongHeon; Lee, Seunghyup; Kim, Ki-Hong; Han, Hyouksoo; Park, Gyeong-Su; Park, SungHoon [Analytical Science Laboratory of Samsung Advanced Institute of Technology, P.O. Box 14-1, Yongin 446-712 (Korea, Republic of)

    2013-09-07

    The material arrangement and energy level alignment of an organic bilayer comprising of phenyl-c71-butyric-acid-methyl ester (PCBM-71) and pentacene were studied using ultraviolet photoelectron spectroscopy (UPS) and the argon gas cluster ion beam (GCIB) sputtering process. Although there is a small difference in the full width at half maximum of the carbon C 1s core level peaks and differences in the oxygen O 1s core levels of an X-ray photoemission spectroscopy spectra, these differences are insufficient to clearly distinguish between PCBM-71 and pentacene layers and to classify the interface and bulk regions. On the other hand, the valence band structures in the UPS spectra contain completely distinct configurations for the PCBM-71 and pentacene layers, even when they have similar atomic compositions. According to the valence band structures of the PCBM-71/pentacene/electrodes, the highest unoccupied molecular orbital (HOMO) region of pentacene is at least 0.8 eV closer to the Fermi level than that of PCBM-71 and it does not overlap with any of the chemical states in the valence band structure of PCBM-71. Therefore, by just following the variations in the area of the HOMO region of pentacene, the interface/bulk regions of the PCBM/pentacene layers were distinctly categorized. Besides, the variation of valence band structures as a function of the Ar GCIB sputtering time fully corroborated with the surface morphologies observed in the atomic force microscope images. In summary, we believe that the novel approach, which involves UPS analysis in conjunction with Ar GCIB sputtering, can be one of the best methods to characterize the material distribution and energy level alignments of stacks of organic layers.

  5. Nanostructures by ion beams

    Science.gov (United States)

    Schmidt, B.

    Ion beam techniques, including conventional broad beam ion implantation, ion beam synthesis and ion irradiation of thin layers, as well as local ion implantation with fine-focused ion beams have been applied in different fields of micro- and nanotechnology. The ion beam synthesis of nanoparticles in high-dose ion-implanted solids is explained as phase separation of nanostructures from a super-saturated solid state through precipitation and Ostwald ripening during subsequent thermal treatment of the ion-implanted samples. A special topic will be addressed to self-organization processes of nanoparticles during ion irradiation of flat and curved solid-state interfaces. As an example of silicon nanocrystal application, the fabrication of silicon nanocrystal non-volatile memories will be described. Finally, the fabrication possibilities of nanostructures, such as nanowires and chains of nanoparticles (e.g. CoSi2), by ion beam synthesis using a focused Co+ ion beam will be demonstrated and possible applications will be mentioned.

  6. Biomaterials modification by ion beam

    International Nuclear Information System (INIS)

    Zhang Tonghe; Yi Zhongzhen; Zhang Xu; Wu Yuguang

    2001-01-01

    Ion beam technology is one of best ways for the modification of biomaterials. The results of ion beam modification of biomaterials are given. The method and results of improved biocompatibility are indicated by ion beam technology. The future development of ion beam modification of biomaterials is discussed

  7. Ion beam sputtering and depth profiling: on the characteristics of the induced roughness and the means to cure it at best

    International Nuclear Information System (INIS)

    Limoge, Y.; Maurice, F.; Zemskoff, A.

    1987-01-01

    The purpose of the present communication is to report the first results of a study devoted to the understanding of the surface roughness due either to statistical fluctuations in sputtering or sample microstructural inhomogeneities. In a second part, we shall propose a new method to correct the experimental profiles from the blurring effect of the sample roughness in typical cases of in-depth analysis

  8. Study of SiO2 surface sputtering by a 250-550 keV He+ ion beam during high-resolution Rutherford backscattering measurements

    International Nuclear Information System (INIS)

    Kusanagi, Susumu; Kobayashi, Hajime

    2006-01-01

    Decreases in oxygen signal intensities in spectra of high-resolution Rutherford backscattering spectrometry (HRBS) were observed during measurements on a 5-nm thick SiO 2 layer on a Si substrate when irradiated by 250-550 keV He + ions. Shifts in an implanted arsenic profile in a 5-nm thick SiO 2 /Si substrate were also observed as a result of He + ion irradiation. These results lead to the conclusion that the SiO 2 surface was sputtered by He + ions in this energy range

  9. A hybrid electron cyclotron resonance metal ion source with integrated sputter magnetron for the production of an intense Al{sup +} ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Weichsel, T., E-mail: tim.weichsel@fep.fraunhofer.de; Hartung, U.; Kopte, T. [Fraunhofer Institute for Organic Electronics, Electron Beam and Plasma Technology FEP, 01277 Dresden (Germany); Zschornack, G. [Institute of Solid State Physics, Dresden University of Technology, 01062 Dresden, Germany and Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, Dresden (Germany); Kreller, M.; Philipp, A. [DREEBIT GmbH, 01900 Grossroehrsdorf (Germany)

    2015-09-15

    A metal ion source prototype has been developed: a combination of magnetron sputter technology with 2.45 GHz electron cyclotron resonance (ECR) ion source technology—a so called magnetron ECR ion source (MECRIS). An integrated ring-shaped sputter magnetron with an Al target is acting as a powerful metal atom supply in order to produce an intense current of singly charged metal ions. Preliminary experiments show that an Al{sup +} ion current with a density of 167 μA/cm{sup 2} is extracted from the source at an acceleration voltage of 27 kV. Spatially resolved double Langmuir probe measurements and optical emission spectroscopy were used to study the plasma states of the ion source: sputter magnetron, ECR, and MECRIS plasma. Electron density and temperature as well as Al atom density were determined as a function of microwave and sputter magnetron power. The effect of ECR heating is strongly pronounced in the center of the source. There the electron density is increased by one order of magnitude from 6 × 10{sup 9} cm{sup −3} to 6 × 10{sup 10} cm{sup −3} and the electron temperature is enhanced from about 5 eV to 12 eV, when the ECR plasma is ignited to the magnetron plasma. Operating the magnetron at constant power, it was observed that its discharge current is raised from 1.8 A to 4.8 A, when the ECR discharge was superimposed with a microwave power of 2 kW. At the same time, the discharge voltage decreased from about 560 V to 210 V, clearly indicating a higher plasma density of the MECRIS mode. The optical emission spectrum of the MECRIS plasma is dominated by lines of excited Al atoms and shows a significant contribution of lines arising from singly ionized Al. Plasma emission photography with a CCD camera was used to prove probe measurements and to identify separated plasma emission zones originating from the ECR and magnetron discharge.

  10. Ion Beam Analysis, structure and corrosion studies of nc-TiN/a-Si{sub 3}N{sub 4} nanocomposite coatings deposited by sputtering on AISI 316L

    Energy Technology Data Exchange (ETDEWEB)

    García, J. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, J. Guadalupe Zuno 48, Los Belenes, Zapopan, Jal. 45101 (Mexico); Canto, C.E. [Instituto de Física, UNAM, Avenida de la Investigación S/N, Coyoacán, México, D.F. 04510 (Mexico); Flores, M. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, J. Guadalupe Zuno 48, Los Belenes, Zapopan, Jal. 45101 (Mexico); Andrade, E., E-mail: andrade@fisica.unam.mx [Instituto de Física, UNAM, Avenida de la Investigación S/N, Coyoacán, México, D.F. 04510 (Mexico); Rodríguez, E.; Jiménez, O. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, J. Guadalupe Zuno 48, Los Belenes, Zapopan, Jal. 45101 (Mexico); Solis, C.; Lucio, O.G. de [Instituto de Física, UNAM, Avenida de la Investigación S/N, Coyoacán, México, D.F. 04510 (Mexico); Rocha, M.F. [ESIME-Z, Instituto Politécnico Nacional, ALM Zacatenco, México, D.F. 07738 (Mexico)

    2014-07-15

    In this work, nanocomposite coatings of nc-TiN/a-Si{sub 3}N{sub 4}, were deposited on AISI 316L stainless steel substrate by a DC and RF reactive magnetron co-sputtering technique using an Ar–N{sub 2} plasma. The structure of the coatings was characterized by means of XRD (X-ray Diffraction). The substrate and coating corrosion resistance were evaluated by potentiodynamic polarization using a Ringer solution as electrolyte. Corrosion tests were conducted with the purpose to evaluate the potential of this coating to be used on biomedical alloys. IBA (Ion Beam Analysis) techniques were applied to measure the elemental composition profiles of the films and, XPS (X-ray Photoelectron Spectroscopy) were used as a complementary technique to obtain information about the compounds present in the films. The nanocomposite coatings of nc-TiN/a-Si{sub 3}N{sub 4} show crystalline (TiN) and amorphous (Si{sub 3}N{sub 4}) phases which confer a better protection against the corrosion effects compared with that of the AISI 316L.

  11. Low temperature perovskite crystallization of highly tunable dielectric Ba0.7Sr0.3TiO3 thick films deposited by ion beam sputtering on platinized silicon substrates

    Science.gov (United States)

    Zhu, X. H.; Guigues, B.; Defaÿ, E.; Dubarry, C.; Aïd, M.

    2009-02-01

    Ba0.7Sr0.3TiO3 (BST) thick films with thickness up to 1 μm were deposited on Pt-coated silicon substrates by ion beam sputtering, followed by an annealing treatment. It is demonstrated that pure well-crystallized perovskite phase could be obtained in thick BST films by a low temperature process (535 °C). The BST thick films show highly tunable dielectric properties with tunability (at 800 kV/cm) up to 51.0% and 66.2%, respectively, for the 0.5 and 1 μm thick films. The relationship between strains and dielectric properties was systematically investigated in the thick films. The results suggest that a comparatively larger tensile thermal in-plane strain (0.15%) leads to the degradation in dielectric properties of the 0.5 μm thick film; besides, strong defect-related inhomogeneous strains (˜0.3%) make the dielectric peaks smearing and broadening in the thick films, which, however, preferably results in high figure-of-merit factors over a wide operating temperature range. Moreover, the leakage current behavior in the BST thick films was found to be dominated by the space-charge-limited-current mechanism, irrespective of the film thickness.

  12. Processing of La(1.8)Sr(0.2)CuO4 and YBa2Cu3O7 superconducting thin films by dual-ion-beam sputtering

    Science.gov (United States)

    Madakson, P.; Cuomo, J. J.; Yee, D. S.; Roy, R. A.; Scilla, G.

    1988-03-01

    High-quality La(1.8)Sr(0.2)CuO4 and YBa2Cu3O7 superconducting thin films, with zero resistance at 88 K, have been made by dual-ion-beam sputtering of metal and oxide targets at elevated temperatures. The films are about 1.0 micron thick and are single phase after annealing. The substrates investigated are Nd-YAP, MgO, SrF2, Si, CaF2, ZrO2-(9 pct)Y2O3, BaF2, Al2O3, and SrTiO3. Characterization of the films was carried out using Rutherford backscattering spectroscopy, resistivity measurements, TEM, X-ray diffraction, and SIMS. Substrate/film interaction was observed in every case. This generally involves diffusion of the substrate into the film, which is accompanied by, for example, the replacement of Ba by Sr in the YBa2Cu2O7 structure, in the case of SrTiO3 substrate. The best substrates were those that did not significantly diffuse into the film and which did not react chemically with the film.

  13. Low temperature perovskite crystallization of highly tunable dielectric Ba0.7Sr0.3TiO3 thick films deposited by ion beam sputtering on platinized silicon substrates

    International Nuclear Information System (INIS)

    Zhu, X. H.; Defaye, E.; Aied, M.; Guigues, B.; Dubarry, C.

    2009-01-01

    Ba 0.7 Sr 0.3 TiO 3 (BST) thick films with thickness up to 1 μm were deposited on Pt-coated silicon substrates by ion beam sputtering, followed by an annealing treatment. It is demonstrated that pure well-crystallized perovskite phase could be obtained in thick BST films by a low temperature process (535 deg. C). The BST thick films show highly tunable dielectric properties with tunability (at 800 kV/cm) up to 51.0% and 66.2%, respectively, for the 0.5 and 1 μm thick films. The relationship between strains and dielectric properties was systematically investigated in the thick films. The results suggest that a comparatively larger tensile thermal in-plane strain (0.15%) leads to the degradation in dielectric properties of the 0.5 μm thick film; besides, strong defect-related inhomogeneous strains (∼0.3%) make the dielectric peaks smearing and broadening in the thick films, which, however, preferably results in high figure-of-merit factors over a wide operating temperature range. Moreover, the leakage current behavior in the BST thick films was found to be dominated by the space-charge-limited-current mechanism, irrespective of the film thickness

  14. (Ba+Sr)/Ti ratio dependence of the dielectric properties for (Ba0.5Sr0.5)TiO3 thin films prepared by ion beam sputtering

    Science.gov (United States)

    Yamamichi, Shintaro; Yabuta, Hisato; Sakuma, Toshiyuki; Miyasaka, Yoichi

    1994-03-01

    (Ba0.5Sr0.5)TiO3 thin films were prepared by ion beam sputtering from powder targets with (Ba+Sr)/Ti ratios ranging from 0.80 to 1.50. All of the perovskite (Ba,Sr)TiO3 films were single phase except for the film with a (Ba+Sr)/Ti ratio of 1.41. The dielectric constant values notably depended on the (Ba+Sr)/Ti ratio for films thicker than 70 nm. The highest dielectric constant of 580 was achieved for the 5% (Ba+Sr) rich film. This (Ba+Sr)/Ti ratio dependence was diminished by the thickness dependence for thinner films. The grain sizes for the 9% (Ba+Sr) rich film and for the 6% (Ba+Sr) poor film ranged from 70 to 100 nm and from 30 to 60 nm, respectively. This grain size difference could explain why slightly A-site rich (Ba,Sr)TiO3 films have a larger dielectric constant than A-site poor films.

  15. Resonance ionization mass spectrometry of ion beam sputtered neutrals for element- and isotope-selective analysis of plutonium in micro-particles

    Energy Technology Data Exchange (ETDEWEB)

    Erdmann, N. [Institute for Transuranium Elements, European Commission Joint Research Centre, Karlsruhe (Germany); Kratz, J.V.; Trautmann, N. [Johannes Gutenberg-University Mainz, Institute of Nuclear Chemistry, Mainz (Germany); Passler, G. [Johannes Gutenberg-University Mainz, Institute of Physics, Mainz (Germany)

    2009-11-15

    Micro-particles containing actinides are of interest for risk assessments of contaminated areas, nuclear forensic analyses, and IAEA as well as Euratom safeguards programs. For their analysis, secondary ion mass spectrometry (SIMS) has been established as the state-of-the-art standard technique. In the case of actinide mixtures within the particles, however, SIMS suffers from isobaric interferences (e.g., {sup 238}U/{sup 238}Pu, {sup 241}Am/{sup 241}Pu). This can be eliminated by applying resonance ionization mass spectrometry which is based on stepwise resonant excitation and ionization of atoms with laser light, followed by mass spectrometric detection of the produced ions, combining high elemental selectivity with the analysis of isotopic compositions. This paper describes the instrumental modifications for coupling a commercial time-of-flight (TOF)-SIMS apparatus with three-step resonant post-ionization of the sputtered neutrals using a high-repetition-rate (kHz) Nd:YAG laser pumped tunable titanium:sapphire laser system. Spatially resolved ion images obtained from actinide-containing particles in TOF-SIMS mode demonstrate the capability for isotopic and spatial resolution. Results from three-step resonant post-ionization of bulk Gd and Pu samples successfully demonstrate the high elemental selectivity of this process. (orig.)

  16. Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering.

    Science.gov (United States)

    Ke, S Y; Yang, J; Qiu, F; Wang, Z Q; Wang, C; Yang, Y

    2015-11-06

    We discuss the SiGe island co-sputtering deposition on a microcrystalline silicon (μc-Si) buffer layer and the secondary island growth based on this pre-SiGe island layer. The growth phenomenon of SiGe islands on crystalline silicon (c-Si) is also investigated for comparison. The pre-SiGe layer grown on μc-Si exhibits a mixed-phase structure, including SiGe islands and amorphous SiGe (a-SiGe) alloy, while the layer deposited on c-Si shows a single-phase island structure. The preferential growth and Ostwald ripening growth are shown to be the secondary growth mechanism of SiGe islands on μc-Si and c-Si, respectively. This difference may result from the effect of amorphous phase Si (AP-Si) in μc-Si on the island growth. In addition, the Si-Ge intermixing behavior of the secondary-grown islands on μc-Si is interpreted by constructing the model of lateral atomic migration, while this behavior on c-Si is ascribed to traditional uphill atomic diffusion. It is found that the aspect ratios of the preferential-grown super islands are higher than those of the Ostwald-ripening ones. The lower lateral growth rate of super islands due to the lower surface energy of AP-Si on the μc-Si buffer layer for the non-wetting of Ge at 700 °C and the stronger Si-Ge intermixing effect at 730 °C may be responsible for this aspect ratio difference.

  17. Cluster ion beam facilities

    International Nuclear Information System (INIS)

    Popok, V.N.; Prasalovich, S.V.; Odzhaev, V.B.; Campbell, E.E.B.

    2001-01-01

    A brief state-of-the-art review in the field of cluster-surface interactions is presented. Ionised cluster beams could become a powerful and versatile tool for the modification and processing of surfaces as an alternative to ion implantation and ion assisted deposition. The main effects of cluster-surface collisions and possible applications of cluster ion beams are discussed. The outlooks of the Cluster Implantation and Deposition Apparatus (CIDA) being developed in Guteborg University are shown

  18. Intense ion beam generator

    International Nuclear Information System (INIS)

    Humphries, S. Jr.; Sudan, R.N.

    1977-01-01

    Methods and apparatus for producing intense megavolt ion beams are disclosed. In one embodiment, a reflex triode-type pulsed ion accelerator is described which produces ion pulses of more than 5 kiloamperes current with a peak energy of 3 MeV. In other embodiments, the device is constructed so as to focus the beam of ions for high concentration and ease of extraction, and magnetic insulation is provided to increase the efficiency of operation

  19. Ultraviolet optical and microstructural properties of MgF2 and LaF3 coatings deposited by ion-beam sputtering and boat and electron-beam evaporation

    Science.gov (United States)

    Ristau, Detlev; Gunster, Stefan; Bosch, Salvador; Duparre, Angela; Masetti, Enrico; Ferre-Borrull, Josep; Kiriakidis, George; Peiro, Francesca; Quesnel, Etienne; Tikhonravov, Alexander

    2002-06-01

    Single layers of MgF2 and LaF3 were deposited upon superpolished fused-silica and CaF2 substrates by ion-beam sputtering (IBS) as well as by boat and electron beam (e-beam) evaporation and were characterized by a variety of complementary analytical techniques. Besides undergoing photometric and ellipsometric inspection, the samples were investigated at 193 and 633 nm by an optical scatter measurement facility. The structural properties were assessed with atomic-force microscopy, x-ray diffraction, TEM techniques that involved conventional thinning methods for the layers. For measurement of mechanical stress in the coatings, special silicon substrates were coated and analyzed. The dispersion behavior of both deposition materials, which was determined on the basis of various independent photometric measurements and data reduction techniques, is in good agreement with that published in the literature and with the bulk properties of the materials. The refractive indices of the MgF2 coatings ranged from 1.415 to 1.440 for the wavelength of the ArF excimer laser (193 nm) and from 1.435 to 1.465 for the wavelength of the F2 excimer laser (157 nm). For single layers of LaF3 the refractive indices extended from 1.67 to 1.70 at 193 nm to approx1.80 at 157 nm. The IBS process achieves the best homogeneity and the lowest surface roughness values (close to 1 nmrms) of the processes compared in the joint experiment. In contrast to MgF2 boat and e-beam evaporated coatings, which exhibit tensile mechanical stress ranging from 300 to 400 MPa, IBS coatings exhibit high compressive stress of as much as 910 MPa. A similar tendency was found for coating stress in LaF3 single layers. Experimental results are discussed with respect to the microstructural and compositional properties as well as to the surface topography of the coatings.

  20. Negative ion beam processes

    International Nuclear Information System (INIS)

    Hayward, T.D.; Lawrence, G.P.; Bentley, R.F.; Malanify, J.J.; Jackson, J.A.

    1975-06-01

    Los Alamos Scientific Laboratory fiscal year 1975 work on production of intense, very bright, negative hydrogen (H - ), ion beams and conversion of a high-energy (a few hundred MeV) negative beam into a neutral beam are described. The ion source work has used a cesium charge exchange source that has produced H - ion beams greater than or equal to 10 mA (about a factor of 10 greater than those available 1 yr ago) with a brightness of 1.4 x 10 9 A/m 2 -rad 2 (about 18 times brighter than before). The high-energy, neutral beam production investigations have included measurements of the 800-MeV H - -stripping cross section in hydrogen gas (sigma/sub -10/, tentatively 4 x 10 -19 cm 2 ), 3- to 6-MeV H - -stripping cross sections in a hydrogen plasma (sigma/sub -10/, tentatively 2 to 4 x 10 -16 cm 2 ), and the small-angle scattering that results from stripping an 800-MeV H - ion beam to a neutral (H 0 ) beam in hydrogen gas. These last measurements were interrupted by the Los Alamos Meson Physics Facility shutdown in December 1974, but should be completed early in fiscal year 1976 when the accelerator resumes operation. Small-angle scattering calculations have included hydrogen gas-stripping, plasma-stripping, and photodetachment. Calculations indicate that the root mean square angular spread of a 390-MeV negative triton (T - ) beam stripped in a plasma stripper may be as low as 0.7 μrad

  1. Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research. Annual report 2004

    International Nuclear Information System (INIS)

    Borany, J. von; Heera, V.; Helm, M.; Jaeger, H.U.; Moeller, W.

    2005-01-01

    The following topics are dealt with: Silicon based electrically driven microcavity LED, ultraviolet electroluminescence from a Gd-implanted Si-metal-oxide-semiconductor device, semiconductor quantum-cascade lasers, ion beam synthesis and morphology of semiconductor memories, ion implantation, films, sputtering, ion-beam induced destabilization of nanoparticles. (HSI)

  2. Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research. Annual report 2004

    Energy Technology Data Exchange (ETDEWEB)

    Borany, J. von; Heera, V.; Helm, M.; Jaeger, H.U.; Moeller, W. (eds.)

    2005-07-01

    The following topics are dealt with: Silicon based electrically driven microcavity LED, ultraviolet electroluminescence from a Gd-implanted Si-metal-oxide-semiconductor device, semiconductor quantum-cascade lasers, ion beam synthesis and morphology of semiconductor memories, ion implantation, films, sputtering, ion-beam induced destabilization of nanoparticles. (HSI)

  3. Structuring of silicon with low energy focused ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Nebiker, P.W.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muehle, R. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

    1997-09-01

    The defect production in silicon induced by focused ion beam irradiation as a function of energy and projectile mass has been investigated and compared to the measured sputter yield. The aim was to find optimal beam parameters for the structuring of semiconductors with a minimum amount of defects produced per removed atom. (author) 2 figs., 2 refs.

  4. Ion beam assisted film growth

    CERN Document Server

    Itoh, T

    2012-01-01

    This volume provides up to date information on the experimental, theoretical and technological aspects of film growth assisted by ion beams.Ion beam assisted film growth is one of the most effective techniques in aiding the growth of high-quality thin solid films in a controlled way. Moreover, ion beams play a dominant role in the reduction of the growth temperature of thin films of high melting point materials. In this way, ion beams make a considerable and complex contribution to film growth. The volume will be essential reading for scientists, engineers and students working in thi

  5. Characterization of ion beam induced nanostructures

    International Nuclear Information System (INIS)

    Ghatak, J.; Satpati, B.; Umananda, M.; Kabiraj, D.; Som, T.; Dev, B.N.; Akimoto, K.; Ito, K.; Emoto, T.; Satyam, P.V.

    2006-01-01

    Tailoring of nanostructures with energetic ion beams has become an active area of research leading to the fundamental understanding of ion-solid interactions at nanoscale regime and with possible applications in the near future. Rutherford backscattering spectrometry (RBS), high resolution transmission electron microscopy (HRTEM) and asymmetric X-ray Bragg-rocking curve experimental methods have been used to characterize ion-induced effects in nanostructures. The possibility of surface and sub-surface/interface alloying at nano-scale regime, ion-beam induced embedding, crater formation, sputtering yield variations for systems with isolated nanoislands, semi-continuous and continuous films of noble metals (Au, Ag) deposited on single crystalline silicon will be reviewed. MeV-ion induced changes in specified Au-nanoislands on silicon substrate are tracked as a function of ion fluence using ex situ TEM. Strain induced in the bulk silicon substrate surface due to 1.5 MeV Au 2+ and C 2+ ion beam irradiation is determined by using HRTEM and asymmetric Bragg X-ray rocking curve methods. Preliminary results on 1.5 MeV Au 2+ ion-induced effects in nanoislands of Co deposited on silicon substrate will be discussed

  6. Ion beam figuring of silicon aspheres

    Science.gov (United States)

    Demmler, Marcel; Zeuner, Michael; Luca, Alfonz; Dunger, Thoralf; Rost, Dirk; Kiontke, Sven; Krüger, Marcus

    2011-03-01

    Silicon lenses are widely used for infrared applications. Especially for portable devices the size and weight of the optical system are very important factors. The use of aspherical silicon lenses instead of spherical silicon lenses results in a significant reduction of weight and size. The manufacture of silicon lenses is more challenging than the manufacture of standard glass lenses. Typically conventional methods like diamond turning, grinding and polishing are used. However, due to the high hardness of silicon, diamond turning is very difficult and requires a lot of experience. To achieve surfaces of a high quality a polishing step is mandatory within the manufacturing process. Nevertheless, the required surface form accuracy cannot be achieved through the use of conventional polishing methods because of the unpredictable behavior of the polishing tools, which leads to an unstable removal rate. To overcome these disadvantages a method called Ion Beam Figuring can be used to manufacture silicon lenses with high surface form accuracies. The general advantage of the Ion Beam Figuring technology is a contactless polishing process without any aging effects of the tool. Due to this an excellent stability of the removal rate without any mechanical surface damage is achieved. The related physical process - called sputtering - can be applied to any material and is therefore also applicable to materials of high hardness like Silicon (SiC, WC). The process is realized through the commercially available ion beam figuring system IonScan 3D. During the process, the substrate is moved in front of a focused broad ion beam. The local milling rate is controlled via a modulated velocity profile, which is calculated specifically for each surface topology in order to mill the material at the associated positions to the target geometry. The authors will present aspherical silicon lenses with very high surface form accuracies compared to conventionally manufactured lenses.

  7. Focused ion beam technology

    International Nuclear Information System (INIS)

    Gamo, K.

    1993-01-01

    Focussed ion beam (FIB) technology has the advantage of being a maskless process compatible with UHV processing. This makes it attractive for use in in situ processing and has been applied to the fabrication of various mesoscopic structures. The present paper reviews these results whilst putting emphasis on in situ processing by a combined FIB and molecular beam epitaxy system. The typical performance of present FIB systems is also presented. In order to utilize the potential advantages of FIB processing, reduction of damage and improvement of throughput are important, and much effort has been devoted to developing processing techniques which require a reduced dose. The importance of low-energy FIB is discussed. (author)

  8. Heavy ion beam probing

    International Nuclear Information System (INIS)

    Hickok, R.L.

    1980-07-01

    This report consists of the notes distributed to the participants at the IEEE Mini-Course on Modern Plasma Diagnostics that was held in Madison, Wisconsin in May 1980. It presents an overview of Heavy Ion Beam Probing that briefly describes the principles and discuss the types of measurements that can be made. The problems associated with implementing beam probes are noted, possible variations are described, estimated costs of present day systems, and the scaling requirements for large plasma devices are presented. The final chapter illustrates typical results that have been obtained on a variety of plasma devices. No detailed calculations are included in the report, but a list of references that will provide more detailed information is included

  9. Ion beam analysis

    International Nuclear Information System (INIS)

    Bethge, K.

    1995-01-01

    Full text: Ion beam analysis is an accelerator application area for the study of materials and the structure of matter; electrostatic accelerators of the Van de Graaff or Dynamitron type are often used for energies up to a few MeV. Two types of machines are available - the single-ended accelerator type with higher beam currents and greater flexibility of beam management, or the tandem accelerator, limited to atomic species with negative ions. The accelerators are not generally installed at specialist accelerator laboratories and have to be easy to maintain and simple to operate. The most common technique for industrial research is Rutherford Back Scattering Spectrometry (RBS). Helium ions are the preferred projectiles, since at elevated energies (above 3 MeV) nuclear resonance scattering can be used to detect photons associated with target molecules containing elements such as carbon, nitrogen or oxygen. Due to the large amount of available data on nuclear reactions in this energy range, activation analysis (detecting trace elements by irradiating the sample) can be performed with charged particles from accelerators over a wider range of atoms than with the conventional use of neutrons, which is more suited to light elements. Resonance reactions have been used to detect trace metals such as aluminium, titanium and vanadium. Hydrogen atoms are vital to the material performance of several classes of materials, such as semiconductors, insulators and ceramics. Prudent selection of the projectile ion aids the analysis of hydrogen composition; the technique is then a simple measurement of the emitted gamma radiation. Solar cell material and glass can be analysed in this way. On a world-wide basis, numerous laboratories perform ion beam analysis for research purposes; considerable work is carried out in cooperation between scientific laboratories and industry, but only a few laboratories provide a completely commercial service

  10. Ion beam inertial fusion

    International Nuclear Information System (INIS)

    Bangerter, R.O.

    1995-01-01

    About twenty years ago, A. W. Maschke of Brookhaven National Laboratory and R. L. Martin of Argonne National Laboratory recognized that the accelerators that have been developed for high energy and nuclear physics are, in many ways, ideally suited to the requirements of inertial fusion power production. These accelerators are reliable, they have a long operating life, and they can be efficient. Maschke and Martin noted that they can focus ion beams to small focal spots over distances of many meters and that they can readily operate at the high pulse repetition rates needed for commercial power production. Fusion, however, does impose some important new constraints that are not important for high energy or nuclear physics applications. The most challenging new constraint from a scientific standpoint is the requirement that the accelerator deliver more than 10 14 W of beam power to a small quantity (less than 100 mg) of matter. The most challenging constraint from an engineering standpoint is accelerator cost. Maschke showed theoretically that accelerators could produce adequate work. Heavy-ion fusion is widely recognized to be a promising approach to inertial fusion power production. It provides an excellent opportunity to apply methods and technology developed for basic science to an important societal need. The pulsed-power community has developed a complementary, parallel approach to ion beam fusion known as light-ion fusion. The talk will discuss both heavy-ion and light-ion fusion. It will explain target physics requirements and show how they lead to constraints on the usual accelerator parameters such as kinetic energy, current, and emittance. The talk will discuss experiments that are presently underway, specifically experiments on high-current ion sources and injectors, pulsed-power machines recirculating induction accelerators, and transverse beam combining. The talk will give a brief description of a proposed new accelerator called Elise

  11. Topography of InP surface bombarded by O2+ ion beam

    International Nuclear Information System (INIS)

    Sun Zhaoqi

    1997-01-01

    The topography of InP surface bombarded by O 2 + ion beam was investigated. Rippled topographies were observed for bombarded samples, and the data show that the ripple formation starts from a sputtering depth of about 0.4 μm. The wavelength and the disorder of the ripples both increase as the sputtering depth increases. The wavelength of the ripples appears to be sputtering depth dependent rather than sputtering rate dependent. It is confirmed that the ion-beam-induced surface rippling can be effectively suppressed by sample rotation during bombardment

  12. Ion beam profiling from the interaction with a freestanding 2D layer

    Directory of Open Access Journals (Sweden)

    Ivan Shorubalko

    2017-03-01

    Full Text Available Recent years have seen a great potential of the focused ion beam (FIB technology for the nanometer-scale patterning of a freestanding two-dimensional (2D layer. Experimentally determined sputtering yields of the perforation process can be quantitatively explained using the binary collision theory. The main peculiarity of the interaction between the ion beams and the suspended 2D material lies in the absence of collision cascades, featured by no interaction volume. Thus, the patterning resolution is directly set by the beam diameters. Here, we demonstrate pattern resolution beyond the beam size and precise profiling of the focused ion beams. We find out that FIB exposure time of individual pixels can influence the resultant pore diameter. In return, the pore dimension as a function of the exposure dose brings out the ion beam profiles. Using this method of determining an ion-beam point spread function, we verify a Gaussian profile of focused gallium ion beams. Graphene sputtering yield is extracted from the normalization of the measured Gaussian profiles, given a total beam current. Interestingly, profiling of unbeknown helium ion beams in this way results in asymmetry of the profile. Even triangular beam shapes are observed at certain helium FIB conditions, possibly attributable to the trimer nature of the beam source. Our method of profiling ion beams with 2D-layer perforation provides more information on ion beam profiles than the conventional sharp-edge scan method does.

  13. Influence of the surface topography, morphology and structure on magnetic properties of ion beam sputtered iron layers, Fe/Cr/Fe- and Fe/MgO/Fe multilayers; Untersuchung der Morphologie und magnetische Eigenschaften von ionenstrahl-gesputterten Eisen-Einzelschichten, Fe/Cr/Fe- und Fe/MgO/Fe-Schichtsystemen

    Energy Technology Data Exchange (ETDEWEB)

    Steeb, Alexandra

    2007-04-05

    In this PhD Thesis, the influence of the surface topography, morphology and structure on magnetic properties of ion beam sputtered iron layers on GaAs is examined. To analyze the structure of the produced iron films, low energy electron diffraction and scanning tunneling microscopy is employed. The utilized methods to investigate the magnetic properties are Kerr- and SQUID-magnetometry and ferromagnetic resonance. It is demonstrated that on untreated as well as on presputtered and heated GaAs substrates the sputtered iron films grow epitaxially. The least surface roughness of 1 A exhibit iron films grown on untreated GaAs, while iron films on heated GaAs have the highest roughness of 30 A. The largest crystal anisotropy constant is found for the presputtered GaAs/Fe-System. For this preparation method, two monolayers of iron are determined to be magnetically dead layers. At a film thickness of 100 A, 83% of the value for saturation magnetization of bulk iron are achieved. The small observed FMR-linewidths confirm the good bulk properties of the ion beam sputtered iron. Furthermore, an antiferromagnetic interlayer exchange coupling in sputtered Fe/Cr/Fe-films was achieved. For a thickness of 12 to 17 A of the chrome interlayer, a coupling strength up to 0.2 mJ/m{sup 2} is found. To account for the small coupling strength, a strong intermixing at the interface is assumed. Finally, epitaxial Fe/MgO/Fe/FeMn multilayers are deposited on GaAs. After the structuring, it is possible to detect tunneling processes in the tunneling contacts with current-voltage measurements. The tunnel magneto resistance values of 2% are small, which can be explained by the absence of sharp, well-defined interfaces between the Fe/FeMn and the Fe/MgO interfaces. These results demonstrate, that analog to MBE the ion beam sputtering method realizes good magnetic bulk properties. However, interface sensitive phenomena are weakened because of a strong intermixing at the interfaces. (orig.)

  14. Fundamental limits to imaging resolution for focused ion beams

    International Nuclear Information System (INIS)

    Orloff, J.; Swanson, L.W.; Utlaut, M.

    1996-01-01

    This article investigates the limitations on the formation of focused ion beam images from secondary electrons. We use the notion of the information content of an image to account for the effects of resolution, contrast, and signal-to-noise ratio and show that there is a competition between the rate at which small features are sputtered away by the primary beam and the rate of collection of secondary electrons. We find that for small features, sputtering is the limit to imaging resolution, and that for extended small features (e.g., layered structures), rearrangement, redeposition, and differential sputtering rates may limit the resolution in some cases. copyright 1996 American Vacuum Society

  15. Ion Beams: A Powerful Tool for Making New Functional Materials

    International Nuclear Information System (INIS)

    Dev, B. N.

    2010-01-01

    It is well known that ion beams play an important role in semiconductor industry, which utilizes ion implantation and irradiation for materials modification. Ion sputtering technique is used to fabricate multifunctional coatings and multilayers. Using ion implantation, there is a continued effort for fabrication of quantum bit structures for future quantum computers. Availability of focused ion beams (FIBs) has widened the applications of ion beams and nanostructured functional materials are being fabricated using FIBs. Various quantum structures can be fabricated using FIB. Ferromagnetism can either be induced or destroyed in special layered structures using ion irradiation. The magnetic exchange bias phenomenon is of tremendous utility in magnetic recording. Issues of lateral diffusion in nanoscale doping of semiconductors by FIB and an example of exchange bias enhancement by ion irradiation are discussed.

  16. Nanostructuring by ion beam

    International Nuclear Information System (INIS)

    Valbusa, U.; Boragno, C.; Buatier de Mongeot, F.

    2003-01-01

    In metals, the surface curvature dependence of the sputtering yield and the presence of an extra energy barrier whenever diffusing adatoms try to descend step edges, produce a similar surface instability, which builds up regular patterns. By tuning the competition between these two mechanisms, it is possible to create self-organized structures of the size of few nanometers. Height, lateral distance and order of the structures change with the deposition parameters like ion energy, dose, incident angle and substrate temperature. The paper offers an overview of the experiments carried out and foresees possible applications of these results in the area of material science

  17. Formation of biaxial texture in metal films by selective ion beam etching

    Energy Technology Data Exchange (ETDEWEB)

    Park, S.J. [Department of Materials Science and Engineering, University of Florida, 106 Rhines Hall, P.O. Box 116400, Gainesville, FL 32611 (United States); Norton, D.P. [Department of Materials Science and Engineering, University of Florida, 106 Rhines Hall, P.O. Box 116400, Gainesville, FL 32611 (United States)]. E-mail: dnort@mse.ufl.edu; Selvamanickam, Venkat [IGC-SuperPower, LLC, 450 Duane Avenue, Schenectady, NY 12304 (United States)

    2006-05-15

    The formation of in-plane texture via ion bombardment of uniaxially textured metal films was investigated. In particular, selective grain Ar ion beam etching of uniaxially textured (0 0 1) Ni was used to achieve in-plane aligned Ni grains. Unlike conventional ion beam assisted deposition, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux. The initial uniaxial texture is established via surface energy minimization with no ion irradiation. Within this sequential texturing method, in-plane grain alignment is driven by selective etching and grain overgrowth. Biaxial texture was achieved for ion beam irradiation at elevated temperature.

  18. Formation of biaxial texture in metal films by selective ion beam etching

    International Nuclear Information System (INIS)

    Park, S.J.; Norton, D.P.; Selvamanickam, Venkat

    2006-01-01

    The formation of in-plane texture via ion bombardment of uniaxially textured metal films was investigated. In particular, selective grain Ar ion beam etching of uniaxially textured (0 0 1) Ni was used to achieve in-plane aligned Ni grains. Unlike conventional ion beam assisted deposition, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux. The initial uniaxial texture is established via surface energy minimization with no ion irradiation. Within this sequential texturing method, in-plane grain alignment is driven by selective etching and grain overgrowth. Biaxial texture was achieved for ion beam irradiation at elevated temperature

  19. Surface characterization after subaperture reactive ion beam etching

    Energy Technology Data Exchange (ETDEWEB)

    Miessler, Andre; Arnold, Thomas; Rauschenbach, Bernd [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), Leipzig (Germany)

    2010-07-01

    In usual ion beam etching processes using inert gas (Ar, Xe, Kr..) the material removal is determined by physical sputtering effects on the surface. The admixture of suitable gases (CF{sub 4}+O{sub 2}) into the glow discharge of the ion beam source leads to the generation of reactive particles, which are accelerated towards the substrate where they enhance the sputtering process by formation of volatile chemical reaction products. During the last two decades research in Reactive Ion Beam Etching (RIBE) has been done using a broad beam ion source which allows the treatment of smaller samples (diameter sample < diameter beam). Our goal was to apply a sub-aperture Kaufman-type ion source in combination with an applicative movement of the sample with respect to the source, which enables us to etch areas larger than the typical lateral dimensions of the ion beam. Concerning this matter, the etching behavior in the beam periphery plays a decisive role and has to be investigated. We use interferometry to characterize the final surface topography and XPS measurements to analyze the chemical composition of the samples after RIBE.

  20. Ion beam generation and focusing

    International Nuclear Information System (INIS)

    Miller, P.A.; Mendel, C.W.; Swain, D.W.; Goldstein, S.A.

    1975-01-01

    Calculations have shown that efficiently generated and focused ion beams could have significant advantages over electron beams in achieving ignition of inertially-confined thermonuclear fuel. Efficient ion beam generation implies use of a good ion source and suppression of net electron current. Net electron flow can be reduced by allowing electrons to reflex through a highly transparent anode or by use of transverse magnetic fields (either beam self-fields or externally applied fields). Geometric focusing can be achieved if the beam is generated by appropriately shaped electrodes. Experimental results are presented which demonstrate ion beam generation in both reflexing and pinched-flow diodes. Spherically shaped electrodes are used to concentrate a proton beam, and target response to proton deposition is studied

  1. Cooling of molecular ion beams

    International Nuclear Information System (INIS)

    Wolf, A.; Krohn, S.; Kreckel, H.; Lammich, L.; Lange, M.; Strasser, D.; Grieser, M.; Schwalm, D.; Zajfman, D.

    2004-01-01

    An overview of the use of stored ion beams and phase space cooling (electron cooling) is given for the field of molecular physics. Emphasis is given to interactions between molecular ions and electrons studied in the electron cooler: dissociative recombination and, for internally excited molecular ions, electron-induced ro-vibrational cooling. Diagnostic methods for the transverse ion beam properties and for the internal excitation of the molecular ions are discussed, and results for phase space cooling and internal (vibrational) cooling are presented for hydrogen molecular ions

  2. Stress, microstructure and evolution under ion irradiation in thin films grown by ion beam sputtering: modelling and application to interfacial effects in metallic multilayers; Contraintes, microstructure et sollicitation sous irradiation aux ions de films minces elabores par pulverisation ionique: modelisation et application a l'etude des effets interfaciaux dans des multicouches metalliques

    Energy Technology Data Exchange (ETDEWEB)

    Debelle, A

    2006-09-15

    We have investigated the formation of the interfacial chemical mixing in Mo/Ni multilayers, and particularly the influence of ballistic effects during the growth. For this purpose, hetero-epitaxial b.c.c./f.c.c. Mo(110)/Ni(111) multilayers were grown by two deposition methods: thermal evaporation and direct ion beam sputtering. As a preliminary, an accurate description of the stress state in pure sputtered Mo thin films was required. Microstructural and stress state analyses were essentially carried out by X-ray diffraction, and ion irradiation was used as a powerful tool to control the stress level. We showed that thermal evaporated thin films exhibit a weak tensile growth stress ({approx} 0.6 GPa) that can be accounted for by the grain boundary relaxation model, whereas sputtered thin films develop large compressive growth stress (- 2 to - 4 GPa). This latter results from the bombardment of the growing film by the energetic particles involved during the sputtering process (atomic peening phenomenon), which induces the formation of defects in the layers, generating volume distortions. We thus developed a stress model that includes a hydrostatic stress component to account for these volume strains. This model allowed us to determine the 'unstressed and free of defects lattice parameter' a{sub 0}, solely linked to chemical effects. For epitaxial Mo layers, it was possible to separate coherency stress from growth stress due to their distinct kinetic evolution during ion irradiation. Therefore, the stress analysis enabled us to determine the a{sub 0} values in Mo sub-layers of Mo/Ni superlattices. A tendency to the formation of an interfacial alloy is observed independently of the growth conditions, which suggests that thermodynamic forces favour the exchange mechanism. However, the extent of the intermixing effect is clearly enhanced by ballistic effects. (author)

  3. Stress, microstructure and evolution under ion irradiation in thin films grown by ion beam sputtering: modelling and application to interfacial effects in metallic multilayers; Contraintes, microstructure et sollicitation sous irradiation aux ions de films minces elabores par pulverisation ionique: modelisation et application a l'etude des effets interfaciaux dans des multicouches metalliques

    Energy Technology Data Exchange (ETDEWEB)

    Debelle, A

    2006-09-15

    We have investigated the formation of the interfacial chemical mixing in Mo/Ni multilayers, and particularly the influence of ballistic effects during the growth. For this purpose, hetero-epitaxial b.c.c./f.c.c. Mo(110)/Ni(111) multilayers were grown by two deposition methods: thermal evaporation and direct ion beam sputtering. As a preliminary, an accurate description of the stress state in pure sputtered Mo thin films was required. Microstructural and stress state analyses were essentially carried out by X-ray diffraction, and ion irradiation was used as a powerful tool to control the stress level. We showed that thermal evaporated thin films exhibit a weak tensile growth stress ({approx} 0.6 GPa) that can be accounted for by the grain boundary relaxation model, whereas sputtered thin films develop large compressive growth stress (- 2 to - 4 GPa). This latter results from the bombardment of the growing film by the energetic particles involved during the sputtering process (atomic peening phenomenon), which induces the formation of defects in the layers, generating volume distortions. We thus developed a stress model that includes a hydrostatic stress component to account for these volume strains. This model allowed us to determine the 'unstressed and free of defects lattice parameter' a{sub 0}, solely linked to chemical effects. For epitaxial Mo layers, it was possible to separate coherency stress from growth stress due to their distinct kinetic evolution during ion irradiation. Therefore, the stress analysis enabled us to determine the a{sub 0} values in Mo sub-layers of Mo/Ni superlattices. A tendency to the formation of an interfacial alloy is observed independently of the growth conditions, which suggests that thermodynamic forces favour the exchange mechanism. However, the extent of the intermixing effect is clearly enhanced by ballistic effects. (author)

  4. Establishment of an ASEAN Ion Beam Analysis Centre for Material Characterizations at Chiang Mai University

    International Nuclear Information System (INIS)

    Kamwanna, T.; Junphong, P.; Yu, L.D.; Singkarat, S.; Intarasiri, S.; Suwannakachorn, D.

    2015-01-01

    A comprehensive ion beam analysis centre unique in the ASEAN (Association of Southeast Asian Nations) region has been established at Chiang Mai University, Thailand. The centre is equipped with a 1.7 MV Tandetron tandem accelerator and a 300 kV medium energy ion beam accelerator for ion beam analysis. The Tandetron accelerator employs two ion sources, a duoplasmatron ion source and a sputter ion source, capable of producing ion beams of both light species (hydrogen and helium) and heavy species. The beamline is currently able to perform ion beam analysis techniques, such as Rutherford backscattering spectrometry (RBS), RBS/channelling, elastic backscattering (EBS), particle induced x ray emission (PIXE) and ionoluminescence (IL) with the assistance of commercial and self-developed software. The medium energy ion accelerator features an ns pulsed beam so that time of flight (ToF) RBS analysis using medium energy ion beams is available for detailed analysis of materials. Ion beam analysis experiments and applications have been vigorously developed for the real time characterization of various materials. Examples are presented and qualities of the ion beam analysis techniques are discussed. (author)

  5. Examination of fracture surfaces using focused ion beam milling

    International Nuclear Information System (INIS)

    Cairney, J.M.; Munroe, P.R.; Schneibel, J.H.

    2000-01-01

    Composite materials consisting of an iron aluminide matrix with composition approximately Fe-40at%Al, reinforced with a volume fraction of 40--70% ceramic particles (TiC, WC, TiB 2 or ZrB 2 ), are currently being developed. Focused ion beam milling is a relatively new tool to materials science. It uses a high resolution (<5nm), energetic beam of gallium ions to selectively sputter regions of a material, whilst also functioning as a scanning ion microscope. The milling accuracy is of the order of the beam size allowing very precise sectioning to be carried out. The focused ion beam can be used to prepare highly localized cross sections which reveal the internal sub-structure of materials, avoiding detrimental processes such as deformation, or closing of existing cracks by mechanical abrasion. An area is milled from the sample such that, upon tilting, the internal structure can be imaged. The focused ion beam therefore offers a unique opportunity to examine cross-sections of the fracture surfaces in FeAl-based composites. In the present study, the focused ion beam was used to obtain cross-sections of fracture surfaces in two composite materials, in order to examine the extent of interfacial debonding and matrix deformation, thus providing more information about the mode of fracture. These cross-sections were prepared at regions where significant debonding was observed

  6. Ion-beam Plasma Neutralization Interaction Images

    International Nuclear Information System (INIS)

    Igor D. Kaganovich; Edward Startsev; S. Klasky; Ronald C. Davidson

    2002-04-01

    Neutralization of the ion beam charge and current is an important scientific issue for many practical applications. The process of ion beam charge and current neutralization is complex because the excitation of nonlinear plasma waves may occur. Computer simulation images of plasma neutralization of the ion beam pulse are presented

  7. Ion-beam Plasma Neutralization Interaction Images

    Energy Technology Data Exchange (ETDEWEB)

    Igor D. Kaganovich; Edward Startsev; S. Klasky; Ronald C. Davidson

    2002-04-09

    Neutralization of the ion beam charge and current is an important scientific issue for many practical applications. The process of ion beam charge and current neutralization is complex because the excitation of nonlinear plasma waves may occur. Computer simulation images of plasma neutralization of the ion beam pulse are presented.

  8. Materials Science with Ion Beams

    CERN Document Server

    Bernas, Harry

    2010-01-01

    This book introduces materials scientists and designers, physicists and chemists to the properties of materials that can be modified by ion irradiation or implantation. These techniques can help design new materials or to test modified properties; novel applications already show that ion-beam techniques are complementary to others, yielding previously unattainable properties. Also, ion-beam interactions modify materials at the nanoscale, avoiding the often detrimental results of lithographic or chemical techniques. Here, the effects are related to better-known quasi-equilibrium thermodynamics, and the consequences to materials are discussed with concepts that are familiar to materials science. Examples addressed concern semiconductor physics, crystal and nanocluster growth, optics, magnetism, and applications to geology and biology.

  9. Electrohydrodynamic emitters of ion beams

    International Nuclear Information System (INIS)

    Dudnikov, V.G.; Shabalin, A.L.

    1990-01-01

    Physical processes determining generation of ion beams with high emission current density in electrohydrodynamic emitters are considered. Electrohydrodynamic effects developing in ion emission features and kinetics of ion interaction in beams with high density are discussed. Factors determining the size of the emission zone, emission stability at high and low currents, cluster generation, increase of energy spread and decrease of brightness are analyzed. Problems on practical provision of stable EHD emitter functioning are considered. 94 refs.; 8 figs.; 1 tab

  10. Ion beam analysis fundamentals and applications

    CERN Document Server

    Nastasi, Michael; Wang, Yongqiang

    2015-01-01

    Ion Beam Analysis: Fundamentals and Applications explains the basic characteristics of ion beams as applied to the analysis of materials, as well as ion beam analysis (IBA) of art/archaeological objects. It focuses on the fundamentals and applications of ion beam methods of materials characterization.The book explains how ions interact with solids and describes what information can be gained. It starts by covering the fundamentals of ion beam analysis, including kinematics, ion stopping, Rutherford backscattering, channeling, elastic recoil detection, particle induced x-ray emission, and nucle

  11. Control of colliding ion beams

    International Nuclear Information System (INIS)

    Salisbury, W.W.

    1985-01-01

    This invention relates to a method and system for enhancing the power-producing capability of a nuclear fusion reactor, and more specifically to methods and structure for enhancing the ion density in a directed particle fusion reactor. In accordance with the invention, oppositely directed ion beams constrained to helical paths pass through an annular reaction zone. The object is to produce fusion reactions due to collisions between the ion beams. The reaction zone is an annulus as between an inner-cylindrical electrode and an outer-cylindrical coaxial electrode. The beams are enhanced in ion density at spaced points along the paths by providing spline structures protruding from the walls of the electrodes into the reaction zone. This structure causes variations in the electric field along the paths followed by the ion beams. Such fields cause the beams to be successively more and less concentrated as the beams traverse the reaction zone. Points of high concentration are the points at which fusion-producing collisions are most likely to take place

  12. Modification of bamboo surface by irradiation of ion beams

    International Nuclear Information System (INIS)

    Wada, M.; Nishigaito, S.; Flauta, R.; Kasuya, T.

    2003-01-01

    When beams of hydrogen ions, He + and Ar + were irradiated onto bamboo surface, gas release of hydrogen, water, carbon monoxide and carbon dioxide were enhanced. Time evolution of the gas emission showed two peaks corresponding to release of adsorbed gas from the surface by sputtering, and thermal desorption caused by the beam heating. The difference in etched depths between parenchyma lignin and vascular bundles was measured by bombarding bamboo surface with the ion beams in the direction parallel to the vascular bundles. For He + and Ar + , parenchyma lignin was etched more rapidly than vascular bundles, but the difference in etched depth decreased at a larger dose. In the case of hydrogen ion bombardment, vascular bundles were etched faster than parenchyma lignin and the difference in etched depth increased almost in proportion to the dose. The wettability of outer surface of bamboo was improved most effectively by irradiation of a hydrogen ion beam

  13. METI/NEDO Projects on Cluster Ion Beam Process Technology

    International Nuclear Information System (INIS)

    Yamada, Isao; Matsuo, Jiro; Toyoda, Noriaki

    2003-01-01

    Since the initial study of gas cluster ion beams (GCIB) was started in the Ion Beam Engineering Experimental Laboratory of Kyoto University, more than 15 years have passed. Some of the results of that study have already been applied for industrial use. Unique characteristics of gas cluster ion bombardment have been found to offer potential for various other industrial applications. The impact of an accelerated cluster ion upon a target surface imparts very high energy densities into the impact area and produces non-linear effects that are not associated with the impacts of atomic ions. Among prospective applications for these effects are included shallow ion implantation, high rate sputtering, surface cleaning and smoothing, and low temperature thin film formation

  14. In situ MeV ion beam analysis of ceramic surfaces modified by 100-400 keV ion irradiation

    International Nuclear Information System (INIS)

    Weber, W.J.; Yu, N.; Sickafus, K.E.

    1995-05-01

    This paper describes use of the in situ ion beam analysis facility developed at Los Alamos National Laboratory for the study of irradiation effects in ceramic materials. In this facility, an analytical beamline of 3 MV tandem accelerator and an irradiation bean-dine of 200 kV ion implanter are connected at 60 degrees to a common target chamber. This facility provides a fast, efficient, and quantitative measurement tool to monitor changes of composition and crystallinity of materials irradiated by 100-400 keV ions, through sequential measurement of backscattering events of MeV ions combined with ion channeling techniques. We will describe the details of the in situ ion beam analysis and ion irradiation and discuss some of the important issues and their solutions associated with the in situ experiment. These issues include (1) the selection of axial ion channeling direction for the measurement of radiation damage; (2) surface charging and charge collection for data acquisition; (3) surface sputtering during ion irradiation; (4) the effects of MeV analytical beam on the materials; and (5) the sample heating effect on ion beam analysis

  15. Monte Carlo simulations of secondary electron emission due to ion beam milling

    Energy Technology Data Exchange (ETDEWEB)

    Mahady, Kyle [Univ. of Tennessee, Knoxville, TN (United States); Tan, Shida [Intel Corp., Santa Clara, CA (United States); Greenzweig, Yuval [Intel Israel Ltd., Haifa (Israel); Livengood, Richard [Intel Corp., Santa Clara, CA (United States); Raveh, Amir [Intel Israel Ltd., Haifa (Israel); Fowlkes, Jason D. [Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Rack, Philip [Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2017-07-01

    We present a Monte Carlo simulation study of secondary electron emission resulting from focused ion beam milling of a copper target. The basis of this study is a simulation code which simulates ion induced excitation and emission of secondary electrons, in addition to simulating focused ion beam sputtering and milling. This combination of features permits the simulation of the interaction between secondary electron emission, and the evolving target geometry as the ion beam sputters material. Previous ion induced SE Monte Carlo simulation methods have been restricted to predefined target geometries, while the dynamic target in the presented simulations makes this study relevant to image formation in ion microscopy, and chemically assisted ion beam etching, where the relationship between sputtering, and its effects on secondary electron emission, is important. We focus on a copper target, and validate our simulation against experimental data for a range of: noble gas ions, ion energies, ion/substrate angles and the energy distribution of the secondary electrons. We then provide a detailed account of the emission of secondary electrons resulting from ion beam milling; we quantify both the evolution of the yield as high aspect ratio valleys are milled, as well as the emission of electrons within these valleys that do not escape the target, but which are important to the secondary electron contribution to chemically assisted ion induced etching.

  16. Metal negative ion beam extraction from a radio frequency ion source

    Energy Technology Data Exchange (ETDEWEB)

    Kanda, S.; Yamada, N.; Kasuya, T.; Romero, C. F. P.; Wada, M.

    2015-04-08

    A metal ion source of magnetron magnetic field geometry has been designed and operated with a Cu hollow target. Radio frequency power at 13.56 MHz is directly supplied to the hollow target to maintain plasma discharge and induce self-bias to the target for sputtering. The extraction of positive and negative Cu ion beams have been tested. The ion beam current ratio of Cu{sup +} to Ar{sup +} has reached up to 140% when Ar was used as the discharge support gas. Cu{sup −} ion beam was observed at 50 W RF discharge power and at a higher Ar gas pressure in the ion source. Improvement of poor RF power matching and suppression of electron current is indispensable for a stable Cu{sup −} ion beam production from the source.

  17. Maskless, resistless ion beam lithography

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Qing [Univ. of California, Berkeley, CA (United States)

    2003-01-01

    As the dimensions of semiconductor devices are scaled down, in order to achieve higher levels of integration, optical lithography will no longer be sufficient for the needs of the semiconductor industry. Alternative next-generation lithography (NGL) approaches, such as extreme ultra-violet (EUV), X-ray, electron-beam, and ion projection lithography face some challenging issues with complicated mask technology and low throughput. Among the four major alternative NGL approaches, ion beam lithography is the only one that can provide both maskless and resistless patterning. As such, it can potentially make nano-fabrication much simpler. This thesis investigates a focused ion beam system for maskless, resistless patterning that can be made practical for high-volume production. In order to achieve maskless, resistless patterning, the ion source must be able to produce a variety of ion species. The compact FIB system being developed uses a multicusp plasma ion source, which can generate ion beams of various elements, such as O2+, BF2+, P+ etc., for surface modification and doping applications. With optimized source condition, around 85% of BF2+, over 90% of O2+ and P+ have been achieved. The brightness of the multicusp-plasma ion source is a key issue for its application to maskless ion beam lithography. It can be substantially improved by optimizing the source configuration and extractor geometry. Measured brightness of 2 keV He+ beam is as high as 440 A/cm2 • Sr, which represents a 30x improvement over prior work. Direct patterning of Si thin film using a focused O2+ ion beam has been investigated. A thin surface oxide film can be selectively formed using 3 keV O2+ ions with the dose of 1015 cm-2. The oxide can then serve as a hard mask for patterning of the Si film. The

  18. Maskless, resistless ion beam lithography

    International Nuclear Information System (INIS)

    Ji, Qing

    2003-01-01

    As the dimensions of semiconductor devices are scaled down, in order to achieve higher levels of integration, optical lithography will no longer be sufficient for the needs of the semiconductor industry. Alternative next-generation lithography (NGL) approaches, such as extreme ultra-violet (EUV), X-ray, electron-beam, and ion projection lithography face some challenging issues with complicated mask technology and low throughput. Among the four major alternative NGL approaches, ion beam lithography is the only one that can provide both maskless and resistless patterning. As such, it can potentially make nano-fabrication much simpler. This thesis investigates a focused ion beam system for maskless, resistless patterning that can be made practical for high-volume production. In order to achieve maskless, resistless patterning, the ion source must be able to produce a variety of ion species. The compact FIB system being developed uses a multicusp plasma ion source, which can generate ion beams of various elements, such as O 2 + , BF 2 + , P + etc., for surface modification and doping applications. With optimized source condition, around 85% of BF 2 + , over 90% of O 2 + and P + have been achieved. The brightness of the multicusp-plasma ion source is a key issue for its application to maskless ion beam lithography. It can be substantially improved by optimizing the source configuration and extractor geometry. Measured brightness of 2 keV He + beam is as high as 440 A/cm 2 · Sr, which represents a 30x improvement over prior work. Direct patterning of Si thin film using a focused O 2 + ion beam has been investigated. A thin surface oxide film can be selectively formed using 3 keV O 2 + ions with the dose of 10 15 cm -2 . The oxide can then serve as a hard mask for patterning of the Si film. The process flow and the experimental results for directly patterned poly-Si features are presented. The formation of shallow pn-junctions in bulk silicon wafers by scanning focused P

  19. Transport of intense ion beams

    International Nuclear Information System (INIS)

    Lambertson, G.; Laslett, L.J.; Smith, L.

    1977-01-01

    The possibility of using intense bursts of heavy ions to initiate an inertially confined fusion reaction has stimulated interest in the transport of intense unneutralized heavy ion beams by quadrupole or solenoid systems. This problem was examined in some detail, using numerical integration of the coupled envelope equations for the quadrupole case. The general relations which emerge are used to develop examples of high energy transport systems and as a basis for discussing the limitations imposed by a transport system on achievable intensities for initial acceleration

  20. Combined sputtering yield and surface topography development studies on Si

    International Nuclear Information System (INIS)

    Carter, G.; Nobes, M.J.; Lewis, G.W.; Whitton, J.L.

    1981-01-01

    The sputtering yield-incidence angle function has been measured for 8 keV Ar + ions incident on Si by direct scanning electron microscope observation of the depths of sputtered craters on substrate boundaries. This function displays a maximum sputtering yield at an angle thetasub(p) approximately equal to 40 0 to the surface normal. The sequential ion fluence dependence of features developed beneath local surface contaminant was then studied, quasi dynamically, in the same on-line ion source-S.E.M. system. During erosion of the contaminant a steeply elevated pillar of Si forms, which then transforms to a cone, again of high elevation angle >>thetasub(p). This cone is gradually eroded into the surrounding surface with no special significance associated with orientations of angle thetasub(p). Pedal depressions surrounding the pillar-cone system are also noted. The reasons for these observations and their relevance to ion beam surface channel etching are discussed. (Auth.)

  1. Study of SiO{sub 2} surface sputtering by a 250-550 keV He{sup +} ion beam during high-resolution Rutherford backscattering measurements

    Energy Technology Data Exchange (ETDEWEB)

    Kusanagi, Susumu [Materials Analysis Laboratory, Advanced Design Technology Center, Sony Corporation, 4-16-1 Okata Atsugi-shi, Kanagawa 243-0021 (Japan)]. E-mail: susumu.kusanagi@jp.sony.com; Kobayashi, Hajime [Materials Analysis Laboratory, Advanced Design Technology Center, Sony Corporation, 4-16-1 Okata Atsugi-shi, Kanagawa 243-0021 (Japan)

    2006-08-15

    Decreases in oxygen signal intensities in spectra of high-resolution Rutherford backscattering spectrometry (HRBS) were observed during measurements on a 5-nm thick SiO{sub 2} layer on a Si substrate when irradiated by 250-550 keV He{sup +} ions. Shifts in an implanted arsenic profile in a 5-nm thick SiO{sub 2}/Si substrate were also observed as a result of He{sup +} ion irradiation. These results lead to the conclusion that the SiO{sub 2} surface was sputtered by He{sup +} ions in this energy range.

  2. Effects of ion sputtering on semiconductor surfaces

    International Nuclear Information System (INIS)

    McGuire, G.E.

    1978-01-01

    Ion beam sputtering has been combined with Auger spectroscopy to study the effects of ion beams on semiconductor surfaces. Observations on the mass dependence of ion selective sputtering of two component systems are presented. The effects of ion implantation are explained in terms of atomic dilution. Experimental data are presented that illustrate the super-position of selective sputtering and implantation effects on the surface composition. Sample reduction from electron and ion beam interaction is illustrated. Apparent sample changes which one might observe from the effects of residual gas contamination and electric fields are also discussed. (Auth.)

  3. Ion beam modification of polymers

    International Nuclear Information System (INIS)

    Sofield, C.J.; Sugden, S.; Ing, J.; Bridwell, L.B.; Wang, Y.Q.

    1993-01-01

    The implantation of polymers has received considerable attention in recent years, primarily to examine doping of conducting polymers and to increase the surface conductivity (by many orders of magnitude) of highly insulating polymers. The interest in these studies was partly motivated by possible applications to microelectronic device fabrication. More recently it has been observed that ion implantation can under some conditions lead to the formation of a hard (e.g. as hard as steel, ca. 3 MPa) and conducting surface layer. This paper will review the ion beam modification of polymers resulting from ion implantation with reference to fundamental ion-solid interactions. This leads us to examine whether or not implantation of polymers is a contradiction in terms. (Author)

  4. Pattern transfer on fused silica samples using sub-aperture reactive ion beam etching

    Energy Technology Data Exchange (ETDEWEB)

    Miessler, Andre; Arnold, Thomas [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), Permoserstrasse 15, D-04318 Leipzig (Germany)

    2012-07-01

    In comparison to sole Ar ion beam sputtering Reactive Ion Beam Etching (RIBE) reveals the main advantage of increasing the selectivity for different kind of materials due to chemical contributions during the material removal. Therefore RIBE is qualified to be an excellent candidate for pattern transfer applications. The goal of the present study is to apply a sub-aperture reactive ion beam for pattern transfer on large fused silica samples. Concerning this matter, the etching behavior in the ion beam periphery plays a decisive role. Using a Kaufman-typed ion source with NF{sub 3} as reactive gas, XPS measurements of the modified surface exposes impurities like Ni, Fe and Cr, which belongs to chemically eroded material of the plasma pot and a layer formation of silicon nitride, handicaps the etching process mainly in the beam periphery where the sputtering contribution decrease. These side effects influence the pattern transfer of trench structures, produced in AZ MIR 701 photoresist by lithography on a 2'' fused silica plate, by changing the selectivity due to modified chemical reactions of the resist layer. Concerning this we investigate a RF-Ion source for sub aperture reactive ion beam applications and finally we examine the pattern transfer on large fused silica plates using NF{sub 3}-sub-aperture RIBE.

  5. Radiation effects of ion beams on polymers

    International Nuclear Information System (INIS)

    Tagawa, Seiichi

    1993-01-01

    Recent progress in the radiation effects of ion beams on polymers are reviewed briefly. Our recent work on the radiation effects of ion beams on polystyrene thin films on silicon wafers and time resolved emission studies on polymers are described. (orig.)

  6. Ion Beams in Nanoscience and Technology

    CERN Document Server

    Hellborg, Ragnar

    2010-01-01

    Energetic ion beam irradiation is the basis of a wide plethora of powerful research- and fabrication-techniques for materials characterisation and processing on a nanometre scale. This book is suitable for practitioners, researchers and graduate students working in the field of ion beams and application

  7. Ion sources for initial use at the Holifield radioactive ion beam facility

    International Nuclear Information System (INIS)

    Alton, G.D.

    1994-01-01

    The Holifield Radioactive Ion Beam Facility (HRIBF) now under construction at the Oak Ridge National Laboratory will use the 25-MV tandem accelerator for the acceleration of radioactive ion beams to energies appropriate for research in nuclear physics; negative ion beams are, therefore, required for injection into the tandem accelerator. Because charge exchange is an efficient means for converting initially positive ion beams to negative ion beams, both positive and negative ion sources are viable options for use at the facility; the choice of the type of ion source will depend on the overall efficiency for generating the radioactive species of interest. A high-temperature version of the CERN-ISOLDE positive ion source has been selected and a modified version of the source designed and fabricated for initial use at the HRIBF because of its low emittance, relatively high ionization efficiencies and species versatility, and because it has been engineered for remote installation, removal and servicing as required for safe handling in a high-radiation-level ISOL facility. Prototype plasma-sputter negative ion sources and negative surfaceionization sources are also under design consideration for generating negative radioactive ion beams from high electron-affinity elements. A brief review of the HRIBF will be presented, followed by a detailed description of the design features, operational characteristics, ionization efficiencies, and beam qualities (emittances) of these sources

  8. A specialized bioengineering ion beam line

    International Nuclear Information System (INIS)

    Yu, L.D.; Sangyuenyongpipat, S.; Sriprom, C.; Thongleurm, C.; Suwanksum, R.; Tondee, N.; Prakrajang, K.; Vilaithong, T.; Brown, I.G.; Wiedemann, H.

    2007-01-01

    A specialized bioengineering ion beam line has recently been completed at Chiang Mai University to meet rapidly growing needs of research and application development in low-energy ion beam biotechnology. This beam line possesses special features: vertical main beam line, low-energy (30 keV) ion beams, double swerve of the beam, a fast pumped target chamber, and an in-situ atomic force microscope (AFM) system chamber. The whole beam line is situated in a bioclean environment, occupying two stories. The quality of the ion beam has been studied. It has proved that this beam line has significantly contributed to our research work on low-energy ion beam biotechnology

  9. Ion beam processes in Si

    International Nuclear Information System (INIS)

    Holland, O.W.; Narayan, J.; Fathy, D.

    1984-07-01

    Observation of the effects of implants of energetic ions at high dose rates into Si have produced some exciting and interesting results. The mechanism whereby displacement damage produced by ions self-anneals during high dose rate implantation is discussed. It is shown that ion beam annealing (IBA) offers in certain situations unique possibilities for damage annealing. Annealing results of the near surface in Si with a buried oxide layer, formed by high dose implantation, are presented in order to illustrate the advantages offered by IBA. It is also shown that ion irradiation can stimulate the epitaxial recrystallization of amorphous overlayers in Si. The nonequilibrium alloying which results from such epitaxial processes is discussed as well as mechanisms which limit the solid solubility during irradiation. Finally, a dose rate dependency for the production of stable damage by ion irradiation at a constant fluence has been observed. For low fluence implants, the amount of damage is substantially greater in the case of high flux rather than low flux implantation

  10. Materials research with ion beams

    International Nuclear Information System (INIS)

    Meyer, J.D.

    1988-01-01

    This report gives a series of helpful programs which are used in materials research with ion beams. In this context algorithms which can substitute table books are dealt with. This is true for the programs DEDX and PRAL; they are used in order to determine the energy loss of ions in solid bodies, their working range and straggling. Furthermore, simulator routines and analyzers are described. The program TRIM simulates the physical phenomena which occur with the penetration of high-energy ions into solid bodies. In this context electronic excitations, phonons and lattice distortions which are caused by the ions are dealt with. For the experimental ion implantation it is interesting to know the final distribution of the simulated ions in the solid body. The program RBS simulates the Rutherford spectrum of ions which are scattered from a solid body which may consist of up to nine elements and up to one hundred layers. The unknown composition of a solid body can be determined in direct comparison with the experimental spectrum. The program NRA determines concentration and penetrative distribution of an impurity by means of the experimental nuclear reaction spectrum of this impurity. All programs are written in FORTRAN 77. (orig./MM) [de

  11. Modeling of ion beam surface treatment

    Energy Technology Data Exchange (ETDEWEB)

    Stinnett, R W [Quantum Manufacturing Technologies, Inc., Albuquerque, NM (United States); Maenchen, J E; Renk, T J [Sandia National Laboratories, Albuquerque, NM (United States); Struve, K W [Mission Research Corporation, Albuquerque, NM (United States); Campbell, M M [PASTDCO, Albuquerque, NM (United States)

    1997-12-31

    The use of intense pulsed ion beams is providing a new capability for surface engineering based on rapid thermal processing of the top few microns of metal, ceramic, and glass surfaces. The Ion Beam Surface Treatment (IBEST) process has been shown to produce enhancements in the hardness, corrosion, wear, and fatigue properties of surfaces by rapid melt and re-solidification. A new code called IBMOD was created, enabling the modeling of intense ion beam deposition and the resulting rapid thermal cycling of surfaces. This code was used to model the effect of treatment of aluminum, iron, and titanium using different ion species and pulse durations. (author). 3 figs., 4 refs.

  12. Ion beam processing of bio-ceramics

    Science.gov (United States)

    Ektessabi, A. M.

    1995-05-01

    Thin films of bio-inert (TiO 2+α, Al 2O 3+α) and bio-active (compounds of calcium and phosphorus oxides, hydroxyapatite) were deposited on the most commonly used implant materials such as titanium and stainless steel, using a dual-ion-beam deposition system. Rutherford backscattering spectroscopy was carried out for quantitative measurement of the interfacial atomic mixing and the composition of the elements. The experimental results show that by controlling the ion beam energy and current, thin films with very good mechanical properties are obtained as a result of the ion beam mixing within the film and at the interface of the film and substrate.

  13. Pattern formation on Ge by low energy ion beam erosion

    International Nuclear Information System (INIS)

    Teichmann, Marc; Lorbeer, Jan; Frost, Frank; Rauschenbach, Bernd; Ziberi, Bashkim

    2013-01-01

    Modification of nanoscale surface topography is inherent to low-energy ion beam erosion processes and is one of the most important fields of nanotechnology. In this report a comprehensive study of surface smoothing and self-organized pattern formation on Ge(100) by using different noble gases ion beam erosion is presented. The investigations focus on low ion energies (⩽ 2000 eV) and include the entire range of ion incidence angles. It is found that for ions (Ne, Ar) with masses lower than the mass of the Ge target atoms, no pattern formation occurs and surface smoothing is observed for all angles of ion incidence. In contrast, for erosion with higher mass ions (Kr, Xe), ripple formation starts at incidence angles of about 65° depending on ion energy. At smaller incident angles surface smoothing occurs again. Investigations of the surface dynamics for specific ion incidence angles by changing the ion fluence over two orders of magnitude gives a clear evidence for coarsening and faceting of the surface pattern. Both observations indicate that gradient-dependent sputtering and reflection of primary ions play crucial role in the pattern evolution, just at the lowest accessible fluences. The results are discussed in relation to recently proposed redistributive or stress-induced models for pattern formation. In addition, it is argued that a large angular variation of the sputter yield and reflected primary ions can significantly contribute to pattern formation and evolution as nonlinear and non-local processes as supported by simulation of sputtering and ion reflection. (paper)

  14. A one-dimensional ion beam figuring system for x-ray mirror fabrication

    International Nuclear Information System (INIS)

    Idir, Mourad; Huang, Lei; Bouet, Nathalie; Kaznatcheev, Konstantine; Vescovi, Matthew; Lauer, Ken; Conley, Ray; Rennie, Kent; Kahn, Jim; Nethery, Richard; Zhou, Lin

    2015-01-01

    We report on the development of a one-dimensional Ion Beam Figuring (IBF) system for x-ray mirror polishing. Ion beam figuring provides a highly deterministic method for the final precision figuring of optical components with advantages over conventional methods. The system is based on a state of the art sputtering deposition system outfitted with a gridded radio frequency inductive coupled plasma ion beam source equipped with ion optics and dedicated slit developed specifically for this application. The production of an IBF system able to produce an elongated removal function rather than circular is presented in this paper, where we describe in detail the technical aspect and present the first obtained results

  15. A one-dimensional ion beam figuring system for x-ray mirror fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Idir, Mourad, E-mail: midir@bnl.gov; Huang, Lei; Bouet, Nathalie; Kaznatcheev, Konstantine; Vescovi, Matthew; Lauer, Ken [NSLS-II, Brookhaven National Laboratory, P.O. Box 5000, Upton, New York 11973 (United States); Conley, Ray [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Rennie, Kent; Kahn, Jim; Nethery, Richard [Kaufman & Robinson, Inc., 1330 Blue Spruce Drive, Fort Collins, Colorado 80524 (United States); Zhou, Lin [College of Mechatronics and Automation, National University of Defense Technology, 109 Deya Road, Changsha, Hunan 410073 (China); Hu’nan Key Laboratory of Ultra-precision Machining Technology, Changsha, Hunan 410073 (China)

    2015-10-15

    We report on the development of a one-dimensional Ion Beam Figuring (IBF) system for x-ray mirror polishing. Ion beam figuring provides a highly deterministic method for the final precision figuring of optical components with advantages over conventional methods. The system is based on a state of the art sputtering deposition system outfitted with a gridded radio frequency inductive coupled plasma ion beam source equipped with ion optics and dedicated slit developed specifically for this application. The production of an IBF system able to produce an elongated removal function rather than circular is presented in this paper, where we describe in detail the technical aspect and present the first obtained results.

  16. Accelerated ion beam research at ATOMKI

    International Nuclear Information System (INIS)

    Kiss, A.Z.

    2009-01-01

    The paper summarizes the studies on accelerated ion beams at ATOMKI and their technical background, their use from chemical analysis to biological, medical, geological, archaeological applications, their advance from material science to micromachining. (TRA)

  17. Ion beam techniques in arts and archaeology

    International Nuclear Information System (INIS)

    Qin Guangyong; Pan Xianjia; Sun Zhongtian; Gao Zhengyao

    1991-01-01

    The ion beam techniques used in studies of arts and archaeology are compared with other analytical techniques. Some examples are specially selected to illustrate the achievements and trends of the techniques in this field

  18. Mutation induction by ion beams in plants

    Energy Technology Data Exchange (ETDEWEB)

    Tanaka, Atsushi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

    2001-03-01

    The effect of ion beams such as C, He, and Ne ions was investigated on the mutation induction in plants with the expectation that ion beams of high linear energy transfer (LET) can frequently produce large DNA alternation such as inversion, translocation and large deletion rather than point mutation. Mutation frequency was investigated using Arabidopsis visible phenotype loci and was 8 to 33 fold higher for 220 MeV carbon ions than for electrons. Mutation spectrum was investigated on the flower color of chrysanthemum cv to find that flower mutants induced by ion beams show complex and stripe types rather than single color. Polymerase chain reaction analysis was performed to investigate DNA alteration of mutations. In conclusion, the characteristics of ion beams for the mutation induction are 1) high frequency, 2) broad mutation spectrum, and 3) novel mutants. (S. Ohno)

  19. Mutation induction by ion beams in plants

    International Nuclear Information System (INIS)

    Tanaka, Atsushi

    2001-01-01

    The effect of ion beams such as C, He, and Ne ions was investigated on the mutation induction in plants with the expectation that ion beams of high linear energy transfer (LET) can frequently produce large DNA alternation such as inversion, translocation and large deletion rather than point mutation. Mutation frequency was investigated using Arabidopsis visible phenotype loci and was 8 to 33 fold higher for 220 MeV carbon ions than for electrons. Mutation spectrum was investigated on the flower color of chrysanthemum cv to find that flower mutants induced by ion beams show complex and stripe types rather than single color. Polymerase chain reaction analysis was performed to investigate DNA alteration of mutations. In conclusion, the characteristics of ion beams for the mutation induction are 1) high frequency, 2) broad mutation spectrum, and 3) novel mutants. (S. Ohno)

  20. Neurosurgical applications of ion beams

    Science.gov (United States)

    Fabrikant, Jacob I.; Levy, Richard P.; Phillips, Mark H.; Frankel, Kenneth A.; Lyman, John T.

    1989-04-01

    The program at Donner Pavilion has applied nuclear medicine research to the diagnosis and radiosurgical treatment of life-threatening intracranial vascular disorders that affect more than half a million Americans. Stereotactic heavy-charged-particle Bragg peak radiosurgery, using narrow beams of heavy ions, demonstrates superior biological and physical characteristics in brain over X-and γ-rays, viz., improved dose distribution in the Bragg peak and sharp lateral and distal borders and less scattering of the beam. Examination of CNS tissue response and alteration of cerebral blood-flow dynamics related to heavy-ion Bragg peak radiosurgery is carried out using three-dimensional treatment planning and quantitative imaging utilizing cerebral angiography, computerized tomography (CT), magnetic resonance imaging (MRI), cine-CT, xenon X-ray CT and positron emission tomography (PET). Also under examination are the physical properties of narrow heavy-ion beams for improving methods of dose delivery and dose distribution and for establishing clinical RBE/LET and dose-response relationships for human CNS tissues. Based on the evaluation and treatment with stereotactically directed narrow beams of heavy charged particles of over 300 patients, with cerebral angiography, CT scanning and MRI and PET scanning of selected patients, plus extensive clinical and neuroradiological followup, it appears that Stereotactic charged-particle Bragg peak radiosurgery obliterates intracranial arteriovenous malformations or protects against rebleeding with reduced morbidity and no mortality. Discussion will include the method of evaluation, the clinical research protocol, the Stereotactic neuroradiological preparation, treatment planning, the radiosurgery procedure and the protocol for followup. Emphasis will be placed on the neurological results, including the neuroradiological and clinical response and early and late delayed injury in brain leading to complications (including vasogenic edema

  1. Ion beam processing of advanced electronic materials

    International Nuclear Information System (INIS)

    Cheung, N.W.; Marwick, A.D.; Roberto, J.B.

    1989-01-01

    This report contains research programs discussed at the materials research society symposia on ion beam processing of advanced electronic materials. Major topics include: shallow implantation and solid-phase epitaxy; damage effects; focused ion beams; MeV implantation; high-dose implantation; implantation in III-V materials and multilayers; and implantation in electronic materials. Individual projects are processed separately for the data bases

  2. Construction of ion beam pulse radiolysis system

    Energy Technology Data Exchange (ETDEWEB)

    Chitose, Norihisa; Katsumura, Yosuke; Domae, Masafumi; Ishigure, Kenkichi; Murakami, Takeshi [Tokyo Univ. (Japan)

    1996-10-01

    An ion beam pulse radiolysis system has been constructed at HIMAC facility. Ion beam of 24 MeV He{sup 2+} with the duration longer than 1 {mu}s is available for irradiation. Three kinds of aqueous solutions, (C{sub 6}H{sub 5}){sub 2}CO, NaHCO{sub 3} and KSCN, were irradiated and the absorption signals were observed. (author)

  3. Revised data taking schedule with ion beams

    CERN Document Server

    Gazdzicki, Marek; Aduszkiewicz, A; Andrieu, B; Anticic, T; Antoniou, N; Argyriades, J; Asryan, A G; Baatar, B; Blondel, A; Blumer, J; Boldizsar, L; Bravar, A; Brzychczyk, J; Bubak, A; Bunyatov, S A; Choi, K U; Christakoglou, P; Chung, P; Cleymans, J; Derkach, D A; Diakonos, F; Dominik, W; Dumarchez, J; Engel, R; Ereditato, A; Feofilov, G A; Fodor, Z; Ferrero, A; Gazdzicki, M; Golubeva, M; Grebieszkow, K; Grzeszczuk, A; Guber, F; Hasegawa, T; Haungs, A; Igolkin, S; Ivanov, A S; Ivashkin, A; Kadija, K; Katrynska, N; Kielczewska, D; Kikola, D; Kisiel, J; Kobayashi, T; Kolesnikov, V I; Kolev, D; Kolevatov, R S; Kondratiev, V P; Kowalski, S; Kurepin, A; Lacey, R; Laszlo, A; Lyubushkin, V V; Majka, Z; I Malakhov, A; Marchionni, A; Marcinek, A; Maris, I; Matveev, V; Melkumov, G L; Meregaglia, A; Messina, M; Mijakowski, P; Mitrovski, M; Montaruli, T; Mrówczynski, St; Murphy, S; Nakadaira, T; Naumenko, P A; Nikolic, V; Nishikawa, K; Palczewski, T; Pálla, G; Panagiotou, A D; Peryt, W; Planeta, R; Pluta, J; Popov, B A; Posiadala, M; Przewlocki, P; Rauch, W; Ravonel, M; Renfordt, R; Röhrich, D; Rondio, E; Rossi, B; Roth, M; Rubbia, A; Rybczynski, M; Sadovskii, A; Sakashita, K; Schuster, T; Sekiguchi, T; Seyboth, P; Shibata, M; Sissakian, A N; Skrzypczak, E; Slodkowski, M; Sorin, A S; Staszel, P; Stefanek, G; Stepaniak, J; Strabel, C; Ströbele, H; Susa, T; Szentpétery, I; Szuba, M; Tada, M; Taranenko, A; Tsenov, R; Ulrich, R; Unger, M; Vassiliou, M; Vechernin, V V; Vesztergombi, G; Wlodarczyk, Z; Wojtaszek, A; Zipper, W; CERN. Geneva. SPS and PS Experiments Committee; SPSC

    2009-01-01

    This document presents the revised data taking schedule of NA61 with ion beams. The revision takes into account limitations due to the new LHC schedule as well as final results concerning the physics performance with secondary ion beams. It is proposed to take data with primary Ar and Xe beams in 2012 and 2014, respectively, and to test and use for physics a secondary B beam from primary Pb beam fragmentation in 2010, 2011 and 2013.

  4. Ion-beam plasma and propagation of intense compensated ion beams

    International Nuclear Information System (INIS)

    Gabovich, M.D.

    1977-01-01

    Discussed are the results of investigation of plasma properties recieved by neutralization of intensive ion beam space charge. Considered is the process of ion beam compensation by charges, formed as a result of gas ionization by this beam or by externally introduced ones. Emphasis is placed on collective phenomena in ion-beam plasma, in particular on non-linear effects limiting amplitude of oscillations. It is shown, that not only dinamic decompensation but the Coulomb collisions of ions with electrons as well as other collective oscillations significantly affects the propagation of compensated ion beams. All the processes are to be taken into account at solving the problem of obtaining ''superdense'' compensated beams

  5. Ion-beam plasma and propagation of intense compensated ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Gabovich, M D [AN Ukrainskoj SSR, Kiev. Inst. Fiziki

    1977-02-01

    Discussed are the results of investigation of plasma properties received by neutralization of intense ion beam space charge. Considered is the process of ion beam compensation by charges, formed as a result of gas ionization by this beam or by externally introduced ones. Emphasis is placed on collective phenomena in ion-beam plasma, in particular on non-linear effects limiting amplitude of oscillations. It is shown that not only dynamic decompensation but the Coulomb collisions of ions with electrons as well as other collective oscillations significantly affects the propagation of compensated ion beams. All the processes are to be taken into account in solving the problem of obtaining ''superdense'' compensated beams.

  6. Selection and design of ion sources for use at the Holifield radioactive ion beam facility

    International Nuclear Information System (INIS)

    Alton, G.D.; Haynes, D.L.; Mills, G.D.; Olsen, D.K.

    1994-01-01

    The Holifield Radioactive Ion Beam Facility now under construction at the Oak Ridge National Laboratory will use the 25 MV tandem accelerator for the acceleration of radioactive ion beams to energies appropriate for research in nuclear physics; negative ion beams are, therefore, required for injection into the tandem accelerator. Because charge exchange is an efficient means for converting initially positive ion beams to negative ion beams, both positive and negative ion sources are viable options for use at the facility. The choice of the type of ion source will depend on the overall efficiency for generating the radioactive species of interest. Although direct-extraction negative ion sources are clearly desirable, the ion formation efficiencies are often too low for practical consideration; for this situation, positive ion sources, in combination with charge exchange, are the logical choice. The high-temperature version of the CERN-ISOLDE positive ion source has been selected and a modified version of the source designed and fabricated for initial use at the facility because of its low emittance, relatively high ionization efficiencies, and species versatility, and because it has been engineered for remote installation, removal, and servicing as required for safe handling in a high-radiation-level ISOL facility. The source will be primarily used to generate ion beams from elements with intermediate to low electron affinities. Prototype plasma-sputter negative ion sources and negative surface-ionization sources are under design consideration for generating radioactive ion beams from high-electron-affinity elements. The design features of these sources and expected efficiencies and beam qualities (emittances) will be described in this report

  7. Photonic guiding structures in lithium niobate crystals produced by energetic ion beams

    Science.gov (United States)

    Chen, Feng

    2009-10-01

    A range of ion beam techniques have been used to fabricate a variety of photonic guiding structures in the well-known lithium niobate (LiNbO3 or LN) crystals that are of great importance in integrated photonics/optics. This paper reviews the up-to-date research progress of ion-beam-processed LiNbO3 photonic structures and reports on their fabrication, characterization, and applications. Ion beams are being used with this material in a wide range of techniques, as exemplified by the following examples. Ion beam milling/etching can remove the selected surface regions of LiNbO3 crystals via the sputtering effects. Ion implantation and swift ion irradiation can form optical waveguide structures by modifying the surface refractive indices of the LiNbO3 wafers. Crystal ion slicing has been used to obtain bulk-quality LiNbO3 single-crystalline thin films or membranes by exfoliating the implanted layer from the original substrate. Focused ion beams can either generate small structures of micron or submicron dimensions, to realize photonic bandgap crystals in LiNbO3, or directly write surface waveguides or other guiding devices in the crystal. Ion beam-enhanced etching has been extensively applied for micro- or nanostructuring of LiNbO3 surfaces. Methods developed to fabricate a range of photonic guiding structures in LiNbO3 are introduced. Modifications of LiNbO3 through the use of various energetic ion beams, including changes in refractive index and properties related to the photonic guiding structures as well as to the materials (i.e., electro-optic, nonlinear optic, luminescent, and photorefractive features), are overviewed in detail. The application of these LiNbO3 photonic guiding structures in both micro- and nanophotonics are briefly summarized.

  8. The role of ion beam etching in magnetic bubble device manufacture

    International Nuclear Information System (INIS)

    Brambley, D.R.; Vanner, K.C.

    1979-01-01

    The most critical stage of fabrication of magnetic bubble memories is the etching of a pattern in a permalloy (80/20 Ni/Fe) film approximately 0.4 microns thick. The permalloy elements so made are used to produce perturbations in an externally applied magnetic bias field, and these perturbations cause the translation of magnetic bubbles within an underlying film. Devices now being produced have memory-cell sizes of less than 16 microns and require the etched features to have minimum dimensions of less than 2 microns. The only practicable way of achieving this with the requisite precision is by the use of sputter or ion beam etching. In addition, ion beam etching is used for defining gold conductor elements which perform the functions of bubble nucleation, replication and transfer. This paper briefly outlines the bubble device fabrication process, with special emphasis on the role of ion beam etching. The wafer temperature, element profile and uniformity obtained during ion beam etching are of considerable significance, and some of the factors affecting these will be discussed. Finally some of the limitations of ion beam etching will be described. (author)

  9. Pattern transfer on large samples using a sub-aperture reactive ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Miessler, Andre; Mill, Agnes; Gerlach, Juergen W.; Arnold, Thomas [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), Permoserstrasse 15, D-04318 Leipzig (Germany)

    2011-07-01

    In comparison to sole Ar ion beam sputtering Reactive Ion Beam Etching (RIBE) reveals the main advantage of increasing the selectivity for different kind of materials due to chemical contributions during the material removal. Therefore RIBE is qualified to be an excellent candidate for pattern transfer applications. The goal of the present study is to apply a sub-aperture reactive ion beam for pattern transfer on large fused silica samples. Concerning this matter, the etching behavior in the ion beam periphery plays a decisive role. Using CF{sub 4} as reactive gas, XPS measurements of the modified surface exposes impurities like Ni, Fe and Cr, which belongs to chemically eroded material of the plasma pot as well as an accumulation of carbon (up to 40 atomic percent) in the beam periphery, respectively. The substitution of CF{sub 4} by NF{sub 3} as reactive gas reveals a lot of benefits: more stable ion beam conditions in combination with a reduction of the beam size down to a diameter of 5 mm and a reduced amount of the Ni, Fe and Cr contaminations. However, a layer formation of silicon nitride handicaps the chemical contribution of the etching process. These negative side effects influence the transfer of trench structures on quartz by changing the selectivity due to altered chemical reaction of the modified resist layer. Concerning this we investigate the pattern transfer on large fused silica plates using NF{sub 3}-sub-aperture RIBE.

  10. Irradiation effects of Ar cluster ion beams on Si substrates

    International Nuclear Information System (INIS)

    Ishii, Masahiro; Sugahara, Gaku; Takaoka, G.H.; Yamada, Isao

    1993-01-01

    Gas-cluster ion beams can be applied to new surface modification techniques such as surface cleaning, low damage sputtering and shallow junction formation. The effects of energetic Ar cluster impacts on solid surface were studied for cluster energies of 10-30keV. Irradiation effects were studied by RBS. For Si(111) substrates, irradiated with Ar ≥500 clusters to a dose of 1x10 15 ion/cm 2 at acceleration voltage 15kV, 2x10 14 atoms/cm 2 implanted Ar atoms were detected. In this case, the energy per cluster atom was smaller than 30eV; at this energy, no significant implantation occurs in the case of monomer ions. Ar cluster implantation into Si substrates occurred due to the high energy density irradiation. (author)

  11. Development of sputtered CuSbS2 thin films grown by sequential deposition of binary sulfides

    Science.gov (United States)

    Medina-Montes, M. I.; Vieyra-Brito, O.; Mathews, N. R.; Mathew, X.

    2018-05-01

    In this work, CuSbS2 thin films were developed by annealing binary precursors deposited sequentially by rf magnetron sputtering. The recrystallization process was optimized and the films were extensively characterized using a number of tools such as XRD, Raman, SEM, energy dispersive x-ray spectroscopy, atomic force microscopy, Hall, UV–vis spectroscopy, Ellipsometry, Seebeck, and photoresponse. The influence of annealing temperature on the structure, morphology, elemental composition, optical and electrical properties are reported. Annealing below 350 °C resulted in famatinite (Cu3SbS4) and chalcostibite (CuSbS2) ternaries as well as binary phases. Phase-pure chalcostibite was obtained in the range of 350 °C–375 °C. At 400 °C, although CuSbS2 was predominant, tetrahedrite phase (Cu12Sb4S13) appeared as an additional phase. The elemental composition of the films was slightly sulfur deficient, and the atomic percentages of Cu, Sb and S showed a dependence on annealing temperature. The material properties of the phase-pure CuSbS2 thin films are: optical band gap in the range of 1.5–1.62 eV, absorption coefficient close to 105 cm‑1, atomic ratios of Cu/Sb ∼1 and (Cu + Sb)/S ∼1.2, crystal size 18.3–24.5 nm and grain size 50–300 nm. The films were photo-sensitive, showed p-type semiconductor behavior. Electrical resistivity, carrier density and hole mobility were 94–459 Ω cm, 1.6–7.0 × 1015 cm‑3 and 8.4–9.5 cm2 V‑1 s respectively.

  12. Intense non-relativistic cesium ion beam

    International Nuclear Information System (INIS)

    Lampel, M.C.

    1984-02-01

    The Heavy Ion Fusion group at Lawrence Berkeley Laboratory has constructed the One Ampere Cesium Injector as a proof of principle source to supply an induction linac with a high charge density and high brightness ion beam. This is studied here. An electron beam probe was developed as the major diagnostic tool for characterizing ion beam space charge. Electron beam probe data inversion is accomplished with the EBEAM code and a parametrically adjusted model radial charge distribution. The longitudinal charge distribution was not derived, although it is possible to do so. The radial charge distribution that is derived reveals an unexpected halo of trapped electrons surrounding the ion beam. A charge fluid theory of the effect of finite electron temperature on the focusing of neutralized ion beams (Nucl. Fus. 21, 529 (1981)) is applied to the problem of the Cesium beam final focus at the end of the injector. It is shown that the theory's predictions and assumptions are consistent with the experimental data, and that it accounts for the observed ion beam radius of approx. 5 cm, and the electron halo, including the determination of an electron Debye length of approx. 10 cm

  13. A beam profile monitor for heavy ion beams at high impact energies

    International Nuclear Information System (INIS)

    Hausmann, A.; Stiebing, K.E.; Bethge, K.; Froehlich, O.; Koehler, E.; Mueller, A.; Rueschmann, G.

    1994-01-01

    A beam profile monitor for heavy ion beams has been developed for the use in experiments at the Heavy Ion Synchrotron SIS at Gesellschaft fuer Schwerionenforschung Darmstadt (GSI). Four thin scintillation fibres are mounted on one wheel and scan the ion beam sequentially in two linearly independent directions. They are read out via one single photomultiplier common to all four fibres into one time spectrum, which provides all information about beam position, beam extension, time structure and lateral homogeneity of the beam. The system operates in a wide dynamic range of beam intensities. ((orig.))

  14. Investigation of the depth profile of ion beam induced nanopatterns on Si with simultaneous metal incorporation

    Energy Technology Data Exchange (ETDEWEB)

    Khanbabaee, Behnam; Arezki, Bahia; Biermanns, Andreas; Pietsch, Ullrich [Festkoerperphysik, Universitaet Siegen, Siegen (Germany); Cornejo, Marina; Frost, Frank [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), Leipzig (Germany)

    2011-07-01

    Ion beam sputtering of semiconductor surfaces can modify the surface and produce a diversity of surface topographies such as periodic ripples or dot structures depended on sputtering parameters. Well ordered nanostructured surfaces have widely technological applications. Recent experiments have shown that the incorporation of metallic impurity atoms during the sputtering process plays a crucial role in pattern formation on the surfaces. These findings offer a new degree of freedom to control pattern formation. In this contribution we report on surface patterning due to Kr ion beam erosion on silicon surfaces with simultaneous Fe and Cr incorporation. We used X-ray reflectivity (XRR) to determine the depth profiles of metal ions as function of ion beam divergence angles and the mean incidence angle of the ions with respect to the surface normal. Depth profiles are correlated with degree of pattern formation determined by AFM. We show that the mean penetration depth and concentration of metal ions depends on the divergence angle of Kr beam provided by Kaufman source which supports the assumption that metal ions are created due to parasitic interaction of the Kr beam with the steel plate lining. The evaluated depth profile by XRR is in good agreement with SIMS and RBS results.

  15. Surface engineering with ion beams: from self-organized nanostructures to ultra-smooth surfaces

    International Nuclear Information System (INIS)

    Frost, F.; Ziberi, B.; Schindler, A.; Rauschenbach, B.

    2008-01-01

    Low-energy ion-beam sputtering, i.e. the removal of atoms from a surface due to the impact of energetic ions or atoms, is an inherent part of numerous surface processing techniques. Besides the actual removal of material, this surface erosion process often results in a pronounced alteration of the surface topography. Under certain conditions, sputtering results in the formation of well-ordered patterns. This self-organized pattern formation is related to a surface instability between curvature-dependent sputtering that roughens the surface and smoothing by different surface relaxation mechanisms. If the evolution of surface topography is dominated by relaxation mechanisms, surface smoothing can occur. In this presentation the current status of self-organized pattern formation and surface smoothing by low-energy ion-beam erosion of Si and Ge is summarized. In detail it will be shown that a multitude of patterns as well as ultra-smooth surfaces can develop, particularly on Si surfaces. Additionally, the most important experimental parameters that control these processes are discussed. Finally, examples are given for the application of low-energy ion beams as a novel approach for passive optical device engineering for many advanced optical applications. (orig.)

  16. Applications of focused ion beams in microelectronics

    International Nuclear Information System (INIS)

    Broughton, C.; Beale, M.I.J.; Deshmukh, V.G.I.

    1986-04-01

    We present the conclusions of the RSRE programme on the application of focused ion beams in microelectronics and review the literature published in this field. We discuss the design and performance of focused beam implanters and the viability of their application to semiconductor device fabrication. Applications in the areas of lithography, direct implantation and micromachining are discussed in detail. Comparisons are made between the use of focused ion beams and existing techniques for these fabrication processes with a strong emphasis placed on the relative throughputs. We present results on a novel spot size measurement technique and the effect of beam heating on resist. We also present the results of studies into implantation passivation of resist to oxygen plasma attack as basis for a dry development lithography scheme. A novel lithography system employing flood electron exposure from a photocathode which is patterned by a focused ion beam which can also be used to repair mask defects is considered. (author)

  17. Ion beam heating of thin silicon membranes

    International Nuclear Information System (INIS)

    Tissot, P.E.; Hart, R.R.

    1993-01-01

    For silicon membranes irradiated by an ion beam in a vacuum environment, such as the masks used for ion beam lithography and the membranes used for thin film self-annealing, the heat transfer modes are radiation and limited conduction through the thin membrane. The radiation component depends on the total hemispherical emissivity which varies with the thickness and temperature of the membrane. A semiempirical correlation for the absorption coefficient of high resistivity silicon was derived and the variation of the total emissivity with temperature was computed for membranes with thicknesses between 0.1 and 10 μm. Based on this result, the temperatures reached during exposure to ion beams of varying intensities were computed. A proper modeling of the emissivity is shown to be important for beam heating of thin silicon membranes. (orig.)

  18. Ion beam processing of bio-ceramics

    International Nuclear Information System (INIS)

    Ektessabi, A.M.

    1995-01-01

    Thin films of bio-inert (TiO 2+α , Al 2 O 3+α ) and bio-active (compounds of calcium and phosphorus oxides, hydroxy-apatite) were deposited on the most commonly used implant materials such as titanium and stainless steel, using a dual-ion-beam deposition system. Rutherford backscattering spectroscopy was carried out for quantitative measurement of the interfacial atomic mixing and the composition of the elements. The experimental results show that by controlling the ion beam energy and current, thin films with very good mechanical properties are obtained as a result of the ion beam mixing within the film and at the interface of the film and substrate. (orig.)

  19. Intense pulsed ion beams for fusion applications

    International Nuclear Information System (INIS)

    Humphries, S. Jr.

    1980-04-01

    The subject of this review paper is the field of intense pulsed ion beam generation and the potential application of the beams to fusion research. Considerable progress has been made over the past six years. The ion injectors discussed utilize the introduction of electrons into vacuum acceleration gaps in conjunction with high voltage pulsed power technology to achieve high output current. Power levels from injectors exceeding 1000 MW/cm 2 have been obtained for pulse lengths on the order of 10 -7 sec. The first part of the paper treats the physics and technology of intense ion beams. The second part is devoted to applications of intense ion beams in fusion research. A number of potential uses in magnetic confinement systems have been proposed

  20. Variable-spot ion beam figuring

    International Nuclear Information System (INIS)

    Wu, Lixiang; Qiu, Keqiang; Fu, Shaojun

    2016-01-01

    This paper introduces a new scheme of ion beam figuring (IBF), or rather variable-spot IBF, which is conducted at a constant scanning velocity with variable-spot ion beam collimated by a variable diaphragm. It aims at improving the reachability and adaptation of the figuring process within the limits of machine dynamics by varying the ion beam spot size instead of the scanning velocity. In contrast to the dwell time algorithm in the conventional IBF, the variable-spot IBF adopts a new algorithm, which consists of the scan path programming and the trajectory optimization using pattern search. In this algorithm, instead of the dwell time, a new concept, integral etching time, is proposed to interpret the process of variable-spot IBF. We conducted simulations to verify its feasibility and practicality. The simulation results indicate the variable-spot IBF is a promising alternative to the conventional approach.

  1. Pseudo ribbon metal ion beam source

    International Nuclear Information System (INIS)

    Stepanov, Igor B.; Ryabchikov, Alexander I.; Sivin, Denis O.; Verigin, Dan A.

    2014-01-01

    The paper describes high broad metal ion source based on dc macroparticle filtered vacuum arc plasma generation with the dc ion-beam extraction. The possibility of formation of pseudo ribbon beam of metal ions with the parameters: ion beam length 0.6 m, ion current up to 0.2 A, accelerating voltage 40 kV, and ion energy up to 160 kV has been demonstrated. The pseudo ribbon ion beam is formed from dc vacuum arc plasma. The results of investigation of the vacuum arc evaporator ion-emission properties are presented. The influence of magnetic field strength near the cathode surface on the arc spot movement and ion-emission properties of vacuum-arc discharge for different cathode materials are determined. It was shown that vacuum-arc discharge stability can be reached when the magnetic field strength ranges from 40 to 70 G on the cathode surface

  2. Pseudo ribbon metal ion beam source.

    Science.gov (United States)

    Stepanov, Igor B; Ryabchikov, Alexander I; Sivin, Denis O; Verigin, Dan A

    2014-02-01

    The paper describes high broad metal ion source based on dc macroparticle filtered vacuum arc plasma generation with the dc ion-beam extraction. The possibility of formation of pseudo ribbon beam of metal ions with the parameters: ion beam length 0.6 m, ion current up to 0.2 A, accelerating voltage 40 kV, and ion energy up to 160 kV has been demonstrated. The pseudo ribbon ion beam is formed from dc vacuum arc plasma. The results of investigation of the vacuum arc evaporator ion-emission properties are presented. The influence of magnetic field strength near the cathode surface on the arc spot movement and ion-emission properties of vacuum-arc discharge for different cathode materials are determined. It was shown that vacuum-arc discharge stability can be reached when the magnetic field strength ranges from 40 to 70 G on the cathode surface.

  3. Mutation induction by ion beams in arabidopsis

    International Nuclear Information System (INIS)

    Tanaka, Atsushi

    1999-01-01

    An investigation was made on characteristics of ion beams for the biological effects and the induction of mutation using Arabidopsis plant as a model plant for the molecular genetics. Here, the characteristics of mutation at the molecular level as well as new mutants induced by ion beams were described. The ast and sep1 were obtained from the offspring of 1488 carbon ion-irradiated seeds respectively. The uvi1-uvi4 mutants were also induced from 1280 M 1 lines. Thus, ion beams can induce not only known mutants such as tt, gl and hy but also novel mutants with high frequency. Even in the tt phenotype, two new mutant loci other than known loci were found. In chrysanthemum, several kinds of single, complex or stripped flower-color mutants that have been never induced by γirradiation, indicating that ion beams could produce a variety of mutants with the same phenotype. In conclusion, ion beams for the mutation induction are characterized by 1) to induce mutants with high frequency, 2) to show broad mutation spectrum and 3) to produce novel mutants. For these reasons, chemical mutagens such as EMS and low LET ionizing radiation such as X-rays and γ-rays will predominantly induce many but small modifications or DNA damages on the DNA strands. As the result, several point mutations will be produced on the genome. On the contrary, ion beams as a high LET ionizing radiation will not cause so many but large and irreparable DNA damage locally, resulting in production of limited number of null mutation. (M.N.)

  4. Mutation induction by ion beams in arabidopsis

    Energy Technology Data Exchange (ETDEWEB)

    Tanaka, Atsushi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

    1999-07-01

    An investigation was made on characteristics of ion beams for the biological effects and the induction of mutation using Arabidopsis plant as a model plant for the molecular genetics. Here, the characteristics of mutation at the molecular level as well as new mutants induced by ion beams were described. The ast and sep1 were obtained from the offspring of 1488 carbon ion-irradiated seeds respectively. The uvi1-uvi4 mutants were also induced from 1280 M{sub 1} lines. Thus, ion beams can induce not only known mutants such as tt, gl and hy but also novel mutants with high frequency. Even in the tt phenotype, two new mutant loci other than known loci were found. In chrysanthemum, several kinds of single, complex or stripped flower-color mutants that have been never induced by {gamma}irradiation, indicating that ion beams could produce a variety of mutants with the same phenotype. In conclusion, ion beams for the mutation induction are characterized by 1) to induce mutants with high frequency, 2) to show broad mutation spectrum and 3) to produce novel mutants. For these reasons, chemical mutagens such as EMS and low LET ionizing radiation such as X-rays and {gamma}-rays will predominantly induce many but small modifications or DNA damages on the DNA strands. As the result, several point mutations will be produced on the genome. On the contrary, ion beams as a high LET ionizing radiation will not cause so many but large and irreparable DNA damage locally, resulting in production of limited number of null mutation. (M.N.)

  5. Ion beam pulse radiolysis system at HIMAC

    Energy Technology Data Exchange (ETDEWEB)

    Chitose, N; Katsumura, Y; Domae, M; Ishigure, K [Tokyo Univ. (Japan); Murakami, T

    1997-03-01

    An ion beam pulse radiolysis system has been constructed at HIMAC facility. Ion beam of 24MeV He{sup 2+} with the duration longer than 1 {mu}s is available for irradiation. Three kinds of aqueous solutions, (C{sub 6}H{sub 5}){sub 2}CO, NaHCO{sub 3}, and KSCN, were irradiated and the absorption signals corresponding to (C{sub 6}H{sub 5}){sub 2}CO{sup -}, CO{sub 3}{sup -}, and (SCN){sub 2}{sup -} respectively were observed. Ghost signals which interfere with the measurement are also discussed. (author)

  6. Experimental studies with radioactive ion beams

    International Nuclear Information System (INIS)

    Sastry, D.L.; Sree Krishna Murty, G.; Chandrasekhar Rao, M.V.S.

    1991-01-01

    The sources of information presented are essentially taken from the papers reported at several international seminars and those appeared in the Journal of Nuclear Instruments and Methods in Physics Research. Production and usage of radioactive ion beams (RIB) in research have received the attention of scientists all over the world during the past six years. The first radioactive ion beams ( 19 Ne) were produced at Bevalac for the purpose of medical research using a primary beam of energy 800 MeV/a.m.u. (author). 19 refs., 2 figs., 3 tabs

  7. The role of space charge compensation for ion beam extraction and ion beam transport (invited)

    International Nuclear Information System (INIS)

    Spädtke, Peter

    2014-01-01

    Depending on the specific type of ion source, the ion beam is extracted either from an electrode surface or from a plasma. There is always an interface between the (almost) space charge compensated ion source plasma, and the extraction region in which the full space charge is influencing the ion beam itself. After extraction, the ion beam is to be transported towards an accelerating structure in most cases. For lower intensities, this transport can be done without space charge compensation. However, if space charge is not negligible, the positive charge of the ion beam will attract electrons, which will compensate the space charge, at least partially. The final degree of Space Charge Compensation (SCC) will depend on different properties, like the ratio of generation rate of secondary particles and their loss rate, or the fact whether the ion beam is pulsed or continuous. In sections of the beam line, where the ion beam is drifting, a pure electrostatic plasma will develop, whereas in magnetic elements, these space charge compensating electrons become magnetized. The transport section will provide a series of different plasma conditions with different properties. Different measurement tools to investigate the degree of space charge compensation will be described, as well as computational methods for the simulation of ion beams with partial space charge compensation

  8. Ion Beam Extraction by Discrete Ion Focusing

    DEFF Research Database (Denmark)

    2010-01-01

    An apparatus (900) and methods are disclosed for ion beam extraction. In an implementation, the apparatus includes a plasma source (or plasma) (802) and an ion extractor (804). The plasma source is adapted to generate ions and the ion extractor is immersed in the plasma source to extract a fracti...

  9. Temperature-dependent ion beam mixing

    International Nuclear Information System (INIS)

    Rehn, L.E.; Alexander, D.E.

    1993-08-01

    Recent work on enhanced interdiffusion rates during ion-beam mixing at elevated temperatures is reviewed. As discussed previously, expected increase in ion-beam mixing rates due to 'radiation-enhanced diffusion' (RED), i.e. the free migration of isolated vacancy and interstitial defects, is well documented in single-crystal specimens in the range of 0.4 to 0.6 of absolute melting temperature. In contrast, the increase often observed at somewhat lower temperatures during ion-beam mixing of polycrystalline specimens is not well understood. However, sufficient evidence is available to show that this increase reflects intracascade enhancement of a thermally-activated process that also occurs without irradiation. Recent evidence is presented which suggests that this process is Diffusion-induced Grain-Boundary Migration (DIGM). An important complementary conclusion is that because ion-beam mixing in single-crystal specimens exhibits no significant temperature dependence below that of RED, models that invoke only irradiation-specific phenomena, e.g., cascade-overlap, thermal-spikes, or liquid-diffusion, and hence which predict no difference in mixing behavior between single- or poly-crystalline specimens, cannot account for the existing results

  10. National Centre for Radioactive Ion Beams (NCRIB)

    International Nuclear Information System (INIS)

    Chintalapudi, S.N.

    1999-01-01

    A dedicated National Centre for RIB (NCRIB) proposed discussed at several forums is presented. The production of (RIB) radioactive ion beams and applications of beams leading to competitive studies in nuclear structure, nuclear reactions, condensed matter, bio-science and radioactive isotope production etc. are mentioned

  11. Treatment Planning for Ion Beam Therapy

    Science.gov (United States)

    Jäkel, Oliver

    The special aspects of treatment planning for ion beams are outlined in this chapter, starting with positioning and immobilization of the patient, describing imaging and segmentation, definition of treatment parameters, dose calculation and optimization, and, finally, plan assessment, verification, and quality assurance.

  12. Intense pulsed heavy ion beam technology

    International Nuclear Information System (INIS)

    Masugata, Katsumi; Ito, Hiroaki

    2010-01-01

    Development of intense pulsed heavy ion beam accelerator technology is described for the application of materials processing. Gas puff plasma gun and vacuum arc discharge plasma gun were developed as an active ion source for magnetically insulated pulsed ion diode. Source plasma of nitrogen and aluminum were successfully produced with the gas puff plasma gun and the vacuum arc plasma gun, respectively. The ion diode was successfully operated with gas puff plasma gun at diode voltage 190 kV, diode current 2.2 kA and nitrogen ion beam of ion current density 27 A/cm 2 was obtained. The ion composition was evaluated by a Thomson parabola spectrometer and the purity of the nitrogen ion beam was estimated to be 86%. The diode also operated with aluminum ion source of vacuum arc plasma gun. The ion diode was operated at 200 kV, 12 kA, and aluminum ion beam of current density 230 A/cm 2 was obtained. The beam consists of aluminum ions (Al (1-3)+ ) of energy 60-400 keV, and protons (90-130 keV), and the purity was estimated to be 89%. The development of the bipolar pulse accelerator (BPA) was reported. A double coaxial type bipolar pulse generator was developed as the power supply of the BPA. The generator was tested with dummy load of 7.5 ohm, bipolar pulses of -138 kV, 72 ns (1st pulse) and +130 kV, 70 ns (2nd pulse) were successively generated. By applying the bipolar pulse to the drift tube of the BPA, nitrogen ion beam of 2 A/cm 2 was observed in the cathode, which suggests the bipolar pulse acceleration. (author)

  13. Negative ion beam extraction in ROBIN

    International Nuclear Information System (INIS)

    Bansal, Gourab; Gahlaut, Agrajit; Soni, Jignesh; Pandya, Kaushal; Parmar, Kanu G.; Pandey, Ravi; Vuppugalla, Mahesh; Prajapati, Bhavesh; Patel, Amee; Mistery, Hiren; Chakraborty, Arun; Bandyopadhyay, Mainak; Singh, Mahendrajit J.; Phukan, Arindam; Yadav, Ratnakar K.; Parmar, Deepak

    2013-01-01

    Highlights: ► A RF based negative hydrogen ion beam test bed has been set up at IPR, India. ► Ion source has been successfully commissioned and three campaigns of plasma production have been carried out. ► Extraction system (35 kV) has been installed and commissioning has been initiated. Negative ion beam extraction is immediate milestone. -- Abstract: The RF based single driver −ve ion source experiment test bed ROBIN (Replica Of BATMAN like source in INDIA) has been set up at Institute for Plasma Research (IPR), India in a technical collaboration with IPP, Garching, Germany. A hydrogen plasma of density 5 × 10 12 cm −3 is expected in driver region of ROBIN by launching 100 kW RF power into the driver by 1 MHz RF generator. The cesiated source is expected to deliver a hydrogen negative ion beam of 10 A at 35 kV with a current density of 35 mA/cm 2 as observed in BATMAN. In first phase operation of the ROBIN ion source, a hydrogen plasma has been successfully generated (without extraction system) by coupling 80 kW RF input power through a matching network with high power factor (cos θ > 0.8) and different plasma parameters have been measured using Langmuir probes and emission spectroscopy. The plasma density of 2.5 × 10 11 cm −3 has been measured in the extraction region of ROBIN. For negative hydrogen ion beam extraction in second phase operation, extraction system has been assembled and installed with ion source on the vacuum vessel. The source shall be first operated in volume mode for negative ion beam extraction. The commissioning of the source with high voltage power supply has been initiated

  14. Research and development of advanced materials using ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Namba, Susumu [Nagasaki Inst. of Applied Science, Nagasaki (Japan)

    1997-03-01

    A wide range of research and development activities of advanced material synthesis using ion beams will be discussed, including ion beam applications to the state-of-the-art electronics from giant to nano electronics. (author)

  15. Surrey Ion Beam Centre: the EPSRC MRF for ion beam applications - 01002

    International Nuclear Information System (INIS)

    Webb, R.P.

    2016-01-01

    The SIBC (Surrey Ion Beam Centre) is an element of the Virtual Ion Beam Centre that coordinates 3 U.K. experimental facilities: SIBC (University of Surrey) for implantation and ion beam applications, Miami and MEIS facility (University of Huddersfield) and gamma ray and neutron irradiation emulation facility (University of Manchester). The SIBC works actively with industry, developing bespoke processes and services, particularly for the photonics industry and provides ion beam facilities to about 20 companies across the world. It operates a stringent quality control program and is one of the few ion beam laboratories in the world to operate under ISO 9001 certification. The equipment of SIBC is presented and some applications of ion beam analysis concerning the identification of gunshot residues, the determination of the origin of a painting, the analysis of proteins are described. Different techniques such as PIXE (Particle Induced X-ray Emission), RBS (Rutherford Backscattering Spectroscopy), NRA (Nuclear Reaction Analysis), SIMS (Secondary Ion Mass Spectrometry) are also explained in the slides of the presentation that have been added at the end of the paper

  16. The application of ion beams to corrosion science

    International Nuclear Information System (INIS)

    Ashworth, V.; Grant, W.A.; Proctor, R.P.M.

    1976-01-01

    Briefly, the paper provides some basic information on the use of ion beams for surface alloying and surface analysis. After a brief historical review of those fields in which the techniques are already widely applied the important features of typical ion beam machines are described. The basic processes that occur when an ion beam strikes a solid are then considered. Selected ion beam analysis techniques are then discussed. Attention is drawn, wherever possible, to applications in corrosion science and engineering. (author)

  17. Uses of laser optical pumping to produce polarized ion beams

    International Nuclear Information System (INIS)

    Anderson, L.W.

    1983-01-01

    Laser optical pumping can be used to produce polarized alkali atom beams or polarized alkali vapor targets. Polarized alkali atom beams can be converted into polarized alkali ion beams, and polarized alkali vapor targets can be used to produce polarized H - or 3 He - ion beams. In this paper the authors discuss how the polarized alkali atom beams and polarized alkali vapor targets are used to produce polarized ion beams with emphasis on the production of polarized negative ion beams

  18. Ion beam biotechnology and its application to maize breeding

    International Nuclear Information System (INIS)

    Yu Lixia; Li Wenjian; Dong Xicun; Zhou Libin; Ma Shuang

    2008-01-01

    Since the mid of 1980's, ion beam had been widely used in mutagenic breeding of various crops. Ion beam biotechnology had provided a new way for improving corn variety and creating new germplasm resources, and had promoted the development of maize breeding. The ion beam characteristics, the mutagenic mechanism and its application in maize breeding were described. (authors)

  19. High-powered pulsed-ion-beam acceleration and transport

    Energy Technology Data Exchange (ETDEWEB)

    Humphries, S. Jr.; Lockner, T.R.

    1981-11-01

    The state of research on intense ion beam acceleration and transport is reviewed. The limitations imposed on ion beam transport by space charge effects and methods available for neutralization are summarized. The general problem of ion beam neutralization in regions free of applied electric fields is treated. The physics of acceleration gaps is described. Finally, experiments on multi-stage ion acceleration are summarized.

  20. High-powered pulsed-ion-beam acceleration and transport

    International Nuclear Information System (INIS)

    Humphries, S. Jr.; Lockner, T.R.

    1981-11-01

    The state of research on intense ion beam acceleration and transport is reviewed. The limitations imposed on ion beam transport by space charge effects and methods available for neutralization are summarized. The general problem of ion beam neutralization in regions free of applied electric fields is treated. The physics of acceleration gaps is described. Finally, experiments on multi-stage ion acceleration are summarized

  1. The electrochemical behavior and surface structure of titanium electrodes modified by ion beams

    International Nuclear Information System (INIS)

    Huang, G.F.; Xie, Z.; Huang, W.Q.; Yang, S.B.; Zhao, L.H.

    2004-01-01

    Industrial grade titanium modified by ion implantation and sputtering was used as electrodes. The effect of ion beam modification on the electrochemical behavior and surface structure of electrodes was investigated. Also discussed is the hydrogen evolution process of the electrode in acidic solution. Several ions such as Fe + , C + , W + , Ni + and others, were implanted into the electrode. The electrochemical tests were carried out in 1N H 2 SO 4 solution at 30±1 deg. C. The electrode potential was measured versus a saturate calomel electrode as a function of immersion time. The cathodic polarization curves were measured by the stable potential static method. The surface layer composition and the chemical state of the electrodes were also investigated by Auger electron spectrometer (AES) and X-ray photoelectron spectroscopy (XPS) technique. The results show that: (1) the stability of modified electrodes depends on the active elements introduced by ion implantation and sputtering deposition. (2) The hydrogen evolution activity of industrial grade titanium may be improved greatly by ion beam modification. (3) Ion beam modification changed the composition and the surface state of electrodes over a certain depth range and forms an activity layer having catalytic hydrogen evolution, which inhibited the absorption of hydrogen and formation of titanium hydride. Thus promoted hydrogen evolution and improved the hydrogen evolution catalytic activity in industrial grade titanium

  2. Light ion beam transport research at NRL

    International Nuclear Information System (INIS)

    Hinshelwood, D.D.; Boller, J.R.; Cooperstein, G.

    1996-01-01

    Transport of light ion beams through low-pressure background gas is under investigation at NRL in support of the light-ion ICF program at Sandia National Laboratories. Scaling experiments and the field solver/orbit code ATHETA have been used to design and construct a focusing, extraction applied-B diode for transport experiments. An active anode source has been developed to provide a high proton fraction in the ion beam and a fast ion turn-on time. A very sensitive Zeeman diagnostic is being developed to determine the net current distribution in the beam/transport system. Both analytical and numerical techniques using several codes are being applied to transport modeling, leading to the capability of full system studies. (author). 1 tab., 5 figs., 10 refs

  3. Condensed matter physics with radioactive ion beams

    International Nuclear Information System (INIS)

    Haas, H.

    1996-01-01

    An overview of the present uses of radioactive ion beams from ISOLDE for condensed matter research is presented. As simple examples of such work, tracer studies of diffusion processes with radioisotopes and blocking/channeling measurements of emitted particles for lattice location are discussed. Especially the application of nuclear hyperfine interaction techniques such as PAC or Moessbauer spectroscopy has become a powerful tool to study local electronic and structural properties at impurities. Recently, interesting information on impurity properties in semiconductors has been obtained using all these methods. The extreme sensitivity of nuclear techniques makes them also well suited for investigations of surfaces, interfaces, and biomolecules. Some ideas for future uses of high energy radioactive ion beams beyond the scope of the present projects are outlined: the study of diffusion in highly immiscible systems by deep implantation, nuclear polarization with the tilted-foil technique, and transmutation doping of wide-bandgap semiconductors. (orig.)

  4. Bayesian analysis of ion beam diagnostics

    International Nuclear Information System (INIS)

    Toussaint, U. von; Fischer, R.; Dose, V.

    2001-01-01

    Ion beam diagnostics are routinely used for quantitative analysis of the surface composition of mixture materials up to a depth of a few μm. Unfortunately, advantageous properties of the diagnostics, like high depth resolution in combination with a large penetration depth, no destruction of the surface, high sensitivity for large as well as for small atomic numbers, and high sensitivity are mutually exclusive. Among other things, this is due to the ill-conditioned inverse problem of reconstructing depth distributions of the composition elements. Robust results for depth distributions are obtained with adaptive methods in the framework of Bayesian probability theory. The method of adaptive kernels allows for distributions which contain only the significant information of the data while noise fitting is avoided. This is achieved by adaptively reducing the degrees of freedom supporting the distribution. As applications for ion beam diagnostics Rutherford backscattering spectroscopy and particle induced X-ray emission are shown

  5. Ion beam therapy fundamentals, technology, clinical applications

    CERN Document Server

    2012-01-01

    The book provides a detailed, up-to-date account of the basics, the technology, and the clinical use of ion beams for radiation therapy. Theoretical background, technical components, and patient treatment schemes are delineated by the leading experts that helped to develop this field from a research niche to its current highly sophisticated and powerful clinical treatment level used to the benefit of cancer patients worldwide. Rather than being a side-by-side collection of articles, this book consists of related chapters. It is a common achievement by 76 experts from around the world. Their expertise reflects the diversity of the field with radiation therapy, medical and accelerator physics, radiobiology, computer science, engineering, and health economics. The book addresses a similarly broad audience ranging from professionals that need to know more about this novel treatment modality or consider to enter the field of ion beam therapy as a researcher. However, it is also written for the interested public an...

  6. Light ion beam transport research at NRL

    Energy Technology Data Exchange (ETDEWEB)

    Hinshelwood, D D; Boller, J R; Cooperstein, G [Naval Research Lab., Washington, DC (United States). Plasma Physics Div.; and others

    1997-12-31

    Transport of light ion beams through low-pressure background gas is under investigation at NRL in support of the light-ion ICF program at Sandia National Laboratories. Scaling experiments and the field solver/orbit code ATHETA have been used to design and construct a focusing, extraction applied-B diode for transport experiments. An active anode source has been developed to provide a high proton fraction in the ion beam and a fast ion turn-on time. A very sensitive Zeeman diagnostic is being developed to determine the net current distribution in the beam/transport system. Both analytical and numerical techniques using several codes are being applied to transport modeling, leading to the capability of full system studies. (author). 1 tab., 5 figs., 10 refs.

  7. Pulsed high current ion beam processing equipment

    International Nuclear Information System (INIS)

    Korenev, S.A.; Perry, A.

    1995-01-01

    A pulsed high voltage ion source is considered for use in ion beam processing for the surface modification of materials, and deposition of conducting films on different substrates. The source consists of an Arkad'ev-Marx high voltage generator, a vacuum ion diode based on explosive ion emission, and a vacuum chamber as substrate holder. The ion diode allows conducting films to be deposited from metal or allow sources, with ion beam mixing, onto substrates held at a pre-selected temperature. The main variables can be set in the ranges: voltage 100-700 kV, pulse length 0.3 μs, beam current 1-200 A depending on the ion chosen. The applications of this technology are discussed in semiconductor, superconductor and metallizing applications as well as the direction of future development and cost of these devices for commercial application. 14 refs., 6 figs

  8. Nitridation of vanadium by ion beam irradiation

    International Nuclear Information System (INIS)

    Kiuchi, Masato; Chayahara, Akiyoshi; Kinomura, Atsushi; Ensinger, Wolfgang

    1994-01-01

    The nitridation of vanadium by ion beam irradiation is studied by the ion implantation method and the dynamic mixing method. The nitrogen ion implantation was carried out into deposited V(110) films. Using both methods, three phases are formed, i.e. α-V, β-V 2 N, and δ-VN. Which phases are formed is related to the implantation dose or the arrival ratio. The orientation of the VN films produced by the dynamic ion beam mixing method is (100) and that of the VN films produced by the ion implantation method is (111). The nitridation of vanadium is also discussed in comparison with that of titanium and chromium. ((orig.))

  9. Ion beam source construction and applications

    International Nuclear Information System (INIS)

    Torab, S.I.R.

    2011-01-01

    The aim of this thesis is to improve the performance of a new shape cold cathode Penning ion source to be suitable for some applications. In this work, many trials have been made to reach the optimum dimensions of the new shape of cold Molybdenum cathode Penning ion source with radial extraction. The high output ion beam can be extracted in a direction transverse to the discharge region. The new shape cold cathode Penning ion source consists of Copper cylindrical hollow anode of 40 mm length, 12 mm diameter and has two similar cone ends of 15 mm length, 22 mm upper cone diameter and 12 mm bottom cone diameter. The two movable Molybdenum cathodes are fixed in Perspex insulator and placed symmetrically at two ends of the anode. The Copper emission disc of 2 mm thickness and has central aperture of different diameters is placed at the middle of the anode for ion beam exit. The inner surface of the emission disc is isolated from the anode by Perspex insulator except an area of diameter 5 mm to confine the electrical discharge in this area. A movable Faraday cup is placed at different distances from the emission electrode aperture and used to collect the output ion beam from the ion source. The working gases are admitted to the ion source through a hole in the anode via a needle valve which placed between the gas cylinder and the ion source. The optimum anode- cathode distance, the uncovered area diameter of the emission disc, the central aperture diameter of the emission electrode, the distance between emission electrode and Faraday cup have been determined using Argon gas. The optimum distances of the ion source were found to be equal to 6 mm, 5 mm, 2.5 mm, and 3 cm respectively where stable discharge current and maximum output ion beam current at low discharge current can be obtained. The discharge characteristics, ion beam characteristics, and the efficiency of the ion source have been measured at different operating conditions and different gas pressures using

  10. Ion beam stabilization in ion implantation equipment

    International Nuclear Information System (INIS)

    Pina, L.

    1973-01-01

    The results are presented of experimental efforts aimed at ion beam current stabilization in an equipment for ion implantation in solids. The related problems of power supplies are discussed. Measured characteristics of laboratory equipment served the determination of the parameters to be required of the supplies as well as the design and the construction of the supplies. The respective wiring diagram is presented. (J.K.)

  11. Cellular radiobiology of heavy-ion beams

    International Nuclear Information System (INIS)

    Tobias, C.A.; Blakely, E.A.; Ngo, F.Q.H.; Roots, R.J.; Yang, T.C.

    1981-01-01

    Progress is reported in the following areas of this research program: relative biological effectiveness and oxygen enhancement ratio of silicon ion beams; heavy ion effects on the cell cycle; the potentiation effect (2 doses of high LET heavy-ion radiations separated by 2 to 3 hours); potentially lethal damage in actively growing cells and plateau growth cells; radiation induced macromolecular lesions and cellular radiation chemistry; lethal effects of dual radiation; and the development of a biophysical repair/misrepair model

  12. High current density ion beam measurement techniques

    International Nuclear Information System (INIS)

    Ko, W.C.; Sawatzky, E.

    1976-01-01

    High ion beam current measurements are difficult due to the presence of the secondary particles and beam neutralization. For long Faraday cages, true current can be obtained only by negative bias on the target and by summing the cage wall and target currents; otherwise, the beam will be greatly distorted. For short Faraday cages, a combination of small magnetic field and the negative target bias results in correct beam current. Either component alone does not give true current

  13. Fast ion beam-laser interactions

    International Nuclear Information System (INIS)

    Berry, H.G.; Young, L.; Engstroem, L.; Hardis, J.E.; Somerville, L.P.; Ray, W.J.; Kurtz, C.

    1985-01-01

    The authors are using collinear laser excitation of fast ion beams to study a number of atomic structure problems. The problems include the determination of fine and hyperfine structure in light positive and negative ions, plus measurements of absolute wavelengths of light from two-electron ions. In addition the authors intend to use a similar experimental arrangement to study excitation and decay of high Rydberg states first in the absence of fields and then in crossed electric and magnetic fields

  14. Ion beam dump for JT-60 NBI

    International Nuclear Information System (INIS)

    Kuriyama, Masaaki; Horiike, Hiroshi; Matsuda, Shinzaburo; Morita, Hiroaki; Shibanuma, Kiyoshi

    1981-10-01

    The design of the active cooling type ion beam dump for JT-60 NBI which receives the total beam power of 5.6 MW for 10 sec continuously is described. It is composed of array of many finned tubes which is made of oxygen free copper with 0.2% silver content. The safety margin against thermal and mechanical troubles is estimated by the heat transfer and the thermal stress calculation. (author)

  15. NSUF Ion Beam Investment Options Workshop Report

    Energy Technology Data Exchange (ETDEWEB)

    Heidrich, Brenden John [Idaho National Lab. (INL), Idaho Falls, ID (United States)

    2016-03-01

    The workshop that generated this data was convened to develop a set of recommendations (a priority list) for possible funding in the area of US domestic ion beam irradiation capabilities for nuclear energy-focused RD&D. The results of this workshop were intended for use by the Department of Energy - Office of Nuclear Energy (DOE-NE) for consideration of support for these facilities. The workshop considered, as part of the initial potential future support discussions, input submitted through the Office of Nuclear Energy Request for Information (RFI) (DE-SOL-0008318, April 13, 2015), but welcomed discussion (and presentation) of other options, whether specific or general in scope. Input from users, including DOE-NE program interests and needs for ion irradiation RD&D were also included. Participants were selected from various sources: RFI respondents, NEUP/NEET infrastructure applicants, universities with known expertise in nuclear engineering and materials science and other developed sources. During the three days from March 22-24, 2016, the workshop was held at the Idaho National Laboratory Meeting Center in the Energy Innovation Laboratory at 775 University Drive, Idaho Falls, ID 83401. Thirty-one members of the ion beam community attended the workshop, including 15 ion beam facilities, six representatives of Office of Nuclear Energy R&D programs, an industry representative from EPRI and the chairs of the NSUF User’s Organization and the NSUF Scientific Review Board. Another four ion beam users were in attendance acting as advisors to the process, but did not participate in the options assessment. Three members of the sponsoring agency, the Office of Science and Technology Innovation (NE-4) also attended the workshop.

  16. Applications of ion beam analysis workshop. Workshop handbook

    International Nuclear Information System (INIS)

    1995-01-01

    A workshop on applications of ion beam analysis was held at ANSTO, immediate prior to the IBMM-95 Conference in Canberra. It aims was to review developments and current status on use of ion beams for analysis, emphasizing the following aspects: fundamental ion beam research and secondary effects of ion beams; material sciences, geological, life sciences, environmental and industrial applications; computing codes for use in accelerator research; high energy heavy ion scattering and recoil; recent technological development using ion beams. The handbook contains the workshop's program, 29 abstracts and a list of participants

  17. Radioactive ion beam facilities at INFN LNS

    International Nuclear Information System (INIS)

    Rifuggiato, D; Calabretta, L; Celona, L; Chines, F; Cosentino, L; Cuttone, G; Finocchiaro, P; Pappalardo, A; Re, M; Rovelli, A

    2011-01-01

    Radioactive ion beams are produced at INFN- Laboratori Nazionali del Sud (LNS) by means of the two operating accelerators, the Tandem and the Superconducting Cyclotron (CS), originally designed to accelerate stable beams. Both the ISOL (Isotope Separation On Line) and the IFF (In-Flight Fragmentation) methods are exploited to produce RIBs in two different ways at different energies: in the first case, the Cyclotron is the primary accelerator and the Tandem accelerates the secondary beams, while in the second case radioactive fragments are produced by the Cyclotron beam in a thin target with energies comparable to the primary beam energy. The ISOL facility is named EXCYT (Exotics at the Cyclotron and Tandem) and was commissioned in 2006, when the first radioactive beam ( 8 Li) has been produced. The IFF installation is named FRIBs (in Flight Radioactive Ion Beams), and it has started to produce radioactive beams in 2001, placing a thin target in the extraction beam line of the Cyclotron. The development of both facilities to produce and accelerate radioactive ion beams at LNS, is briefly described, with some details on the future prospects that are presently under consideration or realization.

  18. Ion beams in silicon processing and characterization

    International Nuclear Information System (INIS)

    Chason, E.; Picraux, S.T.; Poate, J.M.; Borland, J.O.; Current, M.I.; Diaz de la Rubia, T.; Eaglesham, D.J.; Holland, O.W.; Law, M.E.; Magee, C.W.; Mayer, J.W.; Melngailis, J.; Tasch, A.F.

    1997-01-01

    General trends in integrated circuit technology toward smaller device dimensions, lower thermal budgets, and simplified processing steps present severe physical and engineering challenges to ion implantation. These challenges, together with the need for physically based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in Si. In this article, we review the current status and future trends in ion implantation of Si at low and high energies with particular emphasis on areas where recent advances have been made and where further understanding is needed. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. Developments in the use of ion beams for analysis indicate much progress has been made in one-dimensional analysis, but that severe challenges for two-dimensional characterization remain. The breadth of ion beams in the semiconductor industry is illustrated by the successful use of focused beams for machining and repair, and the development of ion-based lithographic systems. This suite of ion beam processing, modeling, and analysis techniques will be explored both from the perspective of the emerging science issues and from the technological challenges. copyright 1997 American Institute of Physics

  19. The influence of beam divergence on ion-beam induced surface patterns

    International Nuclear Information System (INIS)

    Kree, R.; Yasseri, T.; Hartmann, A.K.

    2009-01-01

    We present a continuum theory and a Monte Carlo model of self-organized surface pattern formation by ion-beam sputtering including effects of beam profiles. Recently, it has turned out that such secondary ion-beam parameters may have a strong influence on the types of emerging patterns. We first discuss several cases, for which beam profiles lead to random parameters in the theory of pattern formation. Subsequently we study the evolution of the averaged height profile in continuum theory and find that the typical Bradley-Harper scenario of dependence of ripple patterns on the angle of incidence can be changed qualitatively. Beam profiles are implemented in Monte Carlo simulations, where we find generic effects on pattern formation. Finally, we demonstrate that realistic beam profiles, taken from experiments, may lead to qualitative changes of surface patterns.

  20. Full three-dimensional simulation of focused ion beam micro/nanofabrication

    International Nuclear Information System (INIS)

    Kim, Heung-Bae; Hobler, Gerhard; Steiger, Andreas; Lugstein, Alois; Bertagnolli, Emmerich

    2007-01-01

    2D focused ion beam simulation is only capable of simulating the topography where the surface shape does not change along the third dimension, both in the final result and during processing. In this paper we show that a 3D topography forms under the beam even though the variation in the final result along the third direction is small. We present the code AMADEUS 3D (advanced modelling and design environment for sputter processes), which is capable of simulating the surface topography in 3D space including angle-dependent sputtering and redeposition. The surface is represented by a structured or unstructured grid, and the nodes are moved according to the calculated sputtering and redeposition fluxes. In addition, experiments have been performed on nanodot formation and box milling for a case where a 3D temporary topography forms. The excellent agreement validates the code and shows the completeness of the model

  1. In situ ion-beam analysis and modification of sol-gel zirconia thin films

    International Nuclear Information System (INIS)

    Levine, T.E.; Mayer, J.W.

    1995-01-01

    We report the investigation of ion-beam-induced densification of sol-gel zirconia thin films via in situ ion backscattering spectrometry. We have irradiated three regions of a sample with neon, argon, and krypton ions. For each ion species, a series of irradiation and analysis steps were performed using an interconnected 3 MV tandem accelerator. The technique offers the advantages of minimizing the variation of experimental parameters and sequentially monitoring the densification phenomenon with increasing ion dose

  2. Ion beam heating for fast ignition

    International Nuclear Information System (INIS)

    Gus'kov, S.Yu.; Limpouch, J.; Klimo, O.

    2010-01-01

    Complete text of publication follows. The characteristics features of the formation of the spatial distribution of the energy transferred to the plasma from a beam of ions with different initial energies, masses and charges under fast ignition conditions are determined. The motion of the Bragg peak is extended with respect to the spatial distribution of the temperature of the ion-beam-heated medium. The parameters of the ion beams are determined to initiate different regimes of fast ignition of thermonuclear fuel precompressed to a density of 300-500 g/cm 3 - the edge regime, in which the ignition region is formed at the outer boundary of the fuel, and the internal regime, in which the ignition region is formed in central parts of the fuel. The conclusion on the requirements for fast ignition by light and heavy ion beams is presented. It is shown that the edge heating with negative temperature gradient is described by a self-similar solution. Such a temperature distribution is the reason of the fact that the ignited beam energy at the edge heating is larger than the minimal ignition energy by factor 1.65. The temperature Bragg peak may be produced by ion beam heating in the reactor scale targets with pR-parameter larger than 3-4 g/cm 2 . In particular, for central ignition of the targets with pR-parameters in the range of 4-8 g/cm 2 the ion beam energy should be, respectively, from 5 to 7 times larger than the minimal ignition energy. The work by S.Ye. Gus'kov, D.V. Il'in, and V.E. Sherman was supported by the Ministry of Education and Science of the Russian Federation under the program 'Development of the Scientific Potential of High Education for 2009-2010' (project no. 2.1.1/1505) and the Russian Foundation for Basic Research (project no. 08-02-01394 a ). The work by J. Limpouch and O. Klimo was supported by the Czech Ministry of Education (project no. LC528, MSM6840770022).

  3. Focused-ion beam patterning of organolead trihalide perovskite for subwavelength grating nanophotonic applications

    KAUST Repository

    Alias, Mohd Sharizal

    2015-07-30

    The coherent amplified spontaneous emission and high photoluminescence quantum efficiency of organolead trihalide perovskite have led to research interest in this material for use in photonic devices. In this paper, the authors present a focused-ion beam patterning strategy for methylammonium lead tribromide (MAPbBr3) perovskite crystal for subwavelength grating nanophotonic applications. The essential parameters for milling, such as the number of scan passes, dwell time, ion dose, ion current, ion incident angle, and gas-assisted etching, were experimentally evaluated to determine the sputtering yield of the perovskite. Based on our patterning conditions, the authors observed that the sputtering yield ranged from 0.0302 to 0.0719 μm3/pC for the MAPbBr3 perovskite crystal. Using XeF2 for the focused-ion beam gas-assisted etching, the authors determined that the etching rate was reduced to between 0.40 and 0.97, depending on the ion dose, compared with milling with ions only. Using the optimized patterning parameters, the authors patterned binary and circular subwavelength grating reflectors on the MAPbBr3 perovskite crystal using the focused-ion beam technique. Based on the computed grating structure with around 97% reflectivity, all of the grating dimensions (period, duty cycle, and grating thickness) were patterned with nanoscale precision (>±3 nm), high contrast, and excellent uniformity. Our results provide a platform for utilizing the focused-ion beam technique for fast prototyping of photonic nanostructures or nanodevices on organolead trihalide perovskite.

  4. Effect of hydrogen ion beam treatment on Si nanocrystal/SiO_2 superlattice-based memory devices

    International Nuclear Information System (INIS)

    Fu, Sheng-Wen; Chen, Hui-Ju; Wu, Hsuan-Ta; Chuang, Bing-Ru; Shih, Chuan-Feng

    2016-01-01

    Graphical abstract: - Highlights: • Memory window and retention properties are improved employing HIBAS technique. • The O/Si ratio and radiative recombination are changed by HIBAS. • Memory properties are affected not only by Si NCs and O/Si ratio but also the RDCs. • The mechanism of hydrogen ion beam alters the memory properties is investigated. - Abstract: This study presents a novel route for synthesizing silicon-rich oxide (SRO)/SiO_2 superlattice-based memory devices with an improved memory window and retention properties. The SiO_2 and SRO superlattices are deposited by reactive sputtering. Specifically, the hydrogen ion beam is used to irradiate the SRO layer immediately after its deposition in the vacuum chamber. The use of the hydrogen ion beam was determined to increase oxygen content and the density of the Si nanocrystals. The memory window increased from 16 to 25.6 V, and the leakage current decreased significantly by two orders, to under ±20 V, for the hydrogen ion beam-prepared devices. This study investigates the mechanism into how hydrogen ion beam treatment alters SRO films and influences memory properties.

  5. Ion beams as a means of deposition and in-situ characterization of thin films and thin film layered structures

    International Nuclear Information System (INIS)

    Krauss, A.R.; Rangaswamy, M.; Gruen, D.M.; Lin, Y.P.; Schmidt, H.; Liu, Y.L.; Barr, T.; Chang, R.P.H.

    1992-01-01

    Ion beam-surface interactions produce many effects in thin film deposition which are similar to those encountered in plasma deposition processes. However, because of the lower pressures and higher directionality associated with the ion beam process, it is easier to avoid some sources of film contamination and to provide better control of ion energies and fluxes. Additional effects occur in the ion beam process because of the relatively small degree of thermalization resulting from gas phase collisions with both the ion beam and atoms sputtered from the target. These effects may be either beneficial or detrimental to the film properties, depending on the material and deposition conditions. Ion beam deposition is particularly suited to the deposition of multi-component films and layered structures, and can in principle be extended to a complete device fabrication process. However, complex phenomena occur in the deposition of many materials of high technical interest which make it desirable to monitor the film growth at the monolayer level. It is possible to make use of ion-surface interactions to provide a full suite of surface analytical capabilities in one instrument, and this data may be obtained at ambient pressures which are far too high for conventional surface analysis techniques. Such an instrument is under development and its current performance characteristics and anticipated capabilities are described

  6. Dwell time adjustment for focused ion beam machining

    International Nuclear Information System (INIS)

    Taniguchi, Jun; Satake, Shin-ichi; Oosumi, Takaki; Fukushige, Akihisa; Kogo, Yasuo

    2013-01-01

    Focused ion beam (FIB) machining is potentially useful for micro/nano fabrication of hard brittle materials, because the removal method involves physical sputtering. Usually, micro/nano scale patterning of hard brittle materials is very difficult to achieve by mechanical polishing or dry etching. Furthermore, in most reported examples, FIB machining has been applied to silicon substrates in a limited range of shapes. Therefore, a versatile method for FIB machining is required. We previously established the dwell time adjustment for mechanical polishing. The dwell time adjustment is calculated by using a convolution model derived from Preston’s hypothesis. More specifically, the target removal shape is a convolution of the unit removal shape, and the dwell time is calculated by means of one of four algorithms. We investigate these algorithms for dwell time adjustment in FIB machining, and we found that a combination a fast Fourier transform calculation technique and a constraint-type calculation is suitable. By applying this algorithm, we succeeded in machining a spherical lens shape with a diameter of 2.93 μm and a depth of 203 nm in a glassy carbon substrate by means of FIB with dwell time adjustment

  7. Ripple coarsening on ion beam-eroded surfaces.

    Science.gov (United States)

    Teichmann, Marc; Lorbeer, Jan; Frost, Frank; Rauschenbach, Bernd

    2014-01-01

    The temporal evolution of ripple pattern on Ge, Si, Al 2 O 3, and SiO 2 by low-energy ion beam erosion with Xe (+) ions is studied. The experiments focus on the ripple dynamics in a fluence range from 1.1 × 10(17) cm(-2) to 1.3 × 10(19) cm(-2) at ion incidence angles of 65° and 75° and ion energies of 600 and 1,200 eV. At low fluences a short-wavelength ripple structure emerges on the surface that is superimposed and later on dominated by long wavelength structures for increasing fluences. The coarsening of short wavelength ripples depends on the material system and angle of incidence. These observations are associated with the influence of reflected primary ions and gradient-dependent sputtering. The investigations reveal that coarsening of the pattern is a universal behavior for all investigated materials, just at the earliest accessible stage of surface evolution.

  8. Corrosion properties of aluminium coatings deposited on sintered NdFeB by ion-beam-assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mao Shoudong; Yang Hengxiu; Li Jinlong; Huang Feng [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, 519 Zhuangshi Road, Ningbo 315201 (China); Song Zhenlun, E-mail: songzhenlun@nimte.ac.cn [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, 519 Zhuangshi Road, Ningbo 315201 (China)

    2011-04-15

    Pure Al coatings were deposited by direct current (DC) magnetron sputtering to protect sintered NdFeB magnets. The effects of Ar{sup +} ion-beam-assisted deposition (IBAD) on the structure and the corrosion behaviour of Al coatings were investigated. The Al coating prepared by DC magnetron sputtering with IBAD (IBAD-Al-coating) had fewer voids than the coating without IBAD (Al-coating). The corrosion behaviour of the Al-coated NdFeB specimens was investigated by potentiodynamic polarisation, a neutral salt spray (NSS) test, and electrochemical impedance spectroscopy (EIS). The pitting corrosion of the Al coatings always began at the voids of the grain boundaries. Bombardment by the Ar{sup +} ion-beams effectively improved the corrosion resistance of the IBAD-Al-coating.

  9. Deflagration wave formed by ion beam, 2

    International Nuclear Information System (INIS)

    Abe, T.; Kasuya, K.; Niu, K.; Tamba, M.

    1979-06-01

    Analyses are given for structures of deflagration waves formed by ion beams in spherical targets. The singularity at the sonic point disappears in the spherical target if the beam pressure is in balance with the plasma pressure. The expanding supersonic flow of the background plasma can be connected with the subsonic flow in the core of the target through the deflagration wave. The length and the strength of the deflagration wave in the spherical target is comparable with the corresponding ones in the slab target. (author)

  10. Laboratory of ion beam applications at ATOMKI

    International Nuclear Information System (INIS)

    Borbely-Kiss, I.; Huszank, R.; Kertesz, Zs.; Kiss, A.Z.; Koltay, E.; Rajta, I.; Simon, A.; Szabo, Gy.; Szikszai, Z.; Szilasi, S.Z.; Szoboszlai, Z.; Uzonyi, I.

    2008-01-01

    Introduction. The Laboratory of Ion Beam Applications of ATOMKI is devoted to applications of atomic and nuclear physics in the fields of environmental research, biomedicine, geology, materials and surface science (including ion beam induced damage investigations and proton beam lithography) and cultural heritage research. We perform our work in the frame of various projects and collaborations: EU, IAEA, R and D, OTKA, etc. Our laboratory provides service for external (national and international) and internal users and contributes to higher education, as well. The Laboratory is based on the home-made 5 MV Van de Graaff (VdG) electrostatic accelerator of the institute. The accelerator was put into operation in 1971 and in the beginning it supplied ion beams exclusively for nuclear physics. A few years later with the measurements of K-shell ionization cross sections the door became open also for basic atomic physics. In parallel with this basic study, the application of proton induced X-ray emission (PIXE) for the elemental analysis of biological (hair, erythrocyte and blood plasma) samples and atmospheric aerosols also started. The first paper on PIXE, a methodological one, was published in 1978. The experience gained on these applications and later on archaeology led to the construction of complex PIXE chambers, which were sold, together with the corresponding know-how, to institutions in China, Portugal, Bangladesh, Jordan, North Korea, Singapore, Cuba and Mexico through the International Atomic Energy Agency (IAEA). For the evaluation of PIXE spectra the laboratory has been continuously developing its own computer programme package. The first version of this continuous development was published in 1988. In the meantime a second IBA analysis method, the proton induced gamma ray emission (PIGE), was introduced in the laboratory and was applied simultaneously with PIXE. Application of deuteron induced gamma ray emission (DIGE) started more than a decade later. A

  11. Improvement of herbage by heavy ion beams

    International Nuclear Information System (INIS)

    Xie Hongmei; Hao Jifang; Wei Zengquan; Xie Zhongkui; Li Fengqin; Wang Yajun

    2004-01-01

    Herbage seeds of legume and grass were irradiated in penetration by 80 MeV/u 20 Ne 10+ ions. The results of field tests and observations of the root-tip cells showed that growth of the seedling was obviously weakened with increasing doses. Frequencies of chromosomal aberration and micronucleus increased significantly with increasing doses. According to the field growth tests, radiation sensitivity of grass herbage to the heavy ion beams was much higher than leguminous herbage, and suitable dose of the heavy ion irradiation for the grass and leguminous herbage is 20-30 Gy and 150 Gy, respectively

  12. High spin studies with radioactive ion beams

    International Nuclear Information System (INIS)

    Garrett, J.D.

    1992-01-01

    The variety of new research possibilities afforded by the culmination of the two frontier areas of nuclear structure: high spin and studies far from nuclear stability (utilizing intense radioactive ion beams) are discussed. Topics presented include: new regions of exotic nuclear shape (e.g. superdeformation, hyperdeformation, and reflection-asymmetric shapes); the population of and consequences of populating exotic nuclear configurations; and complete spectroscopy (i.e. the overlap of state of the art low-and high-spin studies in the same nucleus)

  13. Physics with fast molecular-ion beams

    International Nuclear Information System (INIS)

    Kanter, E.P.

    1980-01-01

    Fast (MeV) molecular-ion beams provide a unique source of energetic projectile nuclei which are correlated in space and time. The recognition of this property has prompted several recent investigations of various aspects of the interactions of these ions with matter. High-resolution measurements on the fragments resulting from these interactions have already yielded a wealth of new information on such diverse topics as plasma oscillations in solids and stereochemical structures of molecular ions as well as a variety of atomic collision phenomena. The general features of several such experiments will be discussed and recent results will be presented

  14. Barium ion beam. Annual progress report

    International Nuclear Information System (INIS)

    Lazar, N.; Dandl, R.; Rynn, N.; Wickham, M.

    1985-01-01

    The barium ion beam Zeeman diagnostic is an in situ nonperturbing diagnostic designed to measure both the plasma electric and magnetic fields in devices such as STM and EBT. The diagnostic satisfies the requirements of high precision, spatial resolution and nonperturbation of the plasma. The technique uses resonance absorption of light from a single moded laser in a beam of energetic barium ions to measure the Zeeman effect in the absorption spectrum (to measure changes in the magnetic field) and to observe the changes in beam velocity by the Doppler shift of the absorption lines

  15. High spin studies with radioactive ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Garrett, J D [Oak Ridge National Lab., TN (United States)

    1992-08-01

    The variety of new research possibilities afforded by the culmination of the two frontier areas of nuclear structure: high spin and studies far from nuclear stability (utilizing intense radioactive ion beams) are discussed. Topics presented include: new regions of exotic nuclear shape (e.g. superdeformation, hyperdeformation, and reflection-asymmetric shapes); the population of and consequences of populating exotic nuclear configurations; and, complete spectroscopy (i.e. the overlap of state of the art low- and high-spin studies in the same nucleus). (author). 47 refs., 8 figs.

  16. Broad ion beam serial section tomography

    Energy Technology Data Exchange (ETDEWEB)

    Winiarski, B., E-mail: b.winiarski@manchester.ac.uk [School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Materials Division, National Physical Laboratory, Teddington TW11 0LW (United Kingdom); Gholinia, A. [School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Mingard, K.; Gee, M. [Materials Division, National Physical Laboratory, Teddington TW11 0LW (United Kingdom); Thompson, G.E.; Withers, P.J. [School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom)

    2017-01-15

    Here we examine the potential of serial Broad Ion Beam (BIB) Ar{sup +} ion polishing as an advanced serial section tomography (SST) technique for destructive 3D material characterisation for collecting data from volumes with lateral dimensions significantly greater than 100 µm and potentially over millimetre sized areas. Further, the associated low level of damage introduced makes BIB milling very well suited to 3D EBSD acquisition with very high indexing rates. Block face serial sectioning data registration schemes usually assume that the data comprises a series of parallel, planar slices. We quantify the variations in slice thickness and parallelity which can arise when using BIB systems comparing Gatan PECS and Ilion BIB systems for large volume serial sectioning and 3D-EBSD data acquisition. As a test case we obtain 3D morphologies and grain orientations for both phases of a WC-11%wt. Co hardmetal. In our case we have carried out the data acquisition through the manual transfer of the sample between SEM and BIB which is a very slow process (1–2 slice per day), however forthcoming automated procedures will markedly speed up the process. We show that irrespective of the sectioning method raw large area 2D-EBSD maps are affected by distortions and artefacts which affect 3D-EBSD such that quantitative analyses and visualisation can give misleading and erroneous results. Addressing and correcting these issues will offer real benefits when large area (millimetre sized) automated serial section BIBS is developed. - Highlights: • In this work we examine how microstructures can be reconstructed in three-dimensions (3D) by serial argon broad ion beam (BIB) milling, enabling much larger volumes (>250×250×100µm{sup 3}) to be acquired than by serial section focused ion beam-scanning electron microscopy (FIB-SEM). • The associated low level of damage introduced makes BIB milling very well suited to 3D-EBSD acquisition with very high indexing rates. • We explore

  17. Light-ion beam for microelectronic applications

    International Nuclear Information System (INIS)

    Hirsch, L.; Tardy, P.; Wantz, G.; Huby, N.; Moretto, P.; Serani, L.; Natali, F.; Damilano, B.; Duboz, J.Y.; Reverchon, J.L.

    2005-01-01

    In this paper we describe the structure and the composition of (Al,Ga)N/GaN Bragg reflectors obtained from Rutherford backscattering spectroscopy. Bragg reflectors constitute a part of blue (λ = 450 nm) resonant cavity light emitting diodes. To improve the measurement accuracy, three tilt angles have been used (10 deg. , 25 deg. and 50 deg. ). In a second part of the paper, ion beam induced charges study has been carried out, with a 2 MeV 4 He + micro-beam, on metal-semiconductor-metal UV photodetectors. Results have been taken into account for the design of the photodetector electrodes

  18. Profiling hydrogen in materials using ion beams

    International Nuclear Information System (INIS)

    Ziegler, J.F.; Wu, C.P.; Williams, P.

    1977-01-01

    Over the last few years many ion beam techniques have been reported for the profiling of hydrogen in materials. Nine of these were evaluated using similar samples of hydrogen ion-implanted into silicon. When possible the samples were analyzed using two or more techniques to confirm the ion-implanted accuracy. The results of this analysis which has produced a consensus profile of H in silicon which is useful as a calibration standard are reported. The analytical techniques used have capabilities ranging from very high depth resolution (approximately 50 A) and high sensitivity (less than 1 ppM) to deep probes for hydrogen which can sample throughout thin sheets

  19. Dual-beam focused ion beam/electron microscopy processing and metrology of redeposition during ion-surface 3D interactions, from micromachining to self-organized picostructures.

    Science.gov (United States)

    Moberlychan, Warren J

    2009-06-03

    Focused ion beam (FIB) tools have become a mainstay for processing and metrology of small structures. In order to expand the understanding of an ion impinging a surface (Sigmund sputtering theory) to our processing of small structures, the significance of 3D boundary conditions must be realized. We consider ion erosion for patterning/lithography, and optimize yields using the angle of incidence and chemical enhancement, but we find that the critical 3D parameters are aspect ratio and redeposition. We consider focused ion beam sputtering for micromachining small holes through membranes, but we find that the critical 3D considerations are implantation and redeposition. We consider ion beam self-assembly of nanostructures, but we find that control of the redeposition by ion and/or electron beams enables the growth of nanostructures and picostructures.

  20. Production of a radioactive 18F ion beam for nuclear reaction studies

    Science.gov (United States)

    Roberts, A. D.; Nickles, R. J.; Paul, M.; Rehm, K. E.; Jiang, C. L.; Blumenthal, D. J.; Gehring, J.; Henderson, D.; Nolen, J.; Pardo, R. C.; Schiffer, J. P.; Segel, R. E.

    1995-12-01

    A two-stage method for generating a radioactive 18F ion beam has been developed. 18F is produced with a medical cyclotron by 11 MeV proton activation of [ 18O]water, then chemically processed off-line for use in a tandem accelerator ion source. Azeotropic distillation reduces the 18O component by 10 5, with a resulting 18O to 18F beam ratio of about 10 3. The average 18F - beam intensity per synthesis is 1 ppA over 120 min from a cesium vapor, sputter negative ion source (SNICS), with a peak intensity of 4.5 ppA.

  1. Proceedings of national seminar on physics with radioactive ion beams

    International Nuclear Information System (INIS)

    Chintalapudi, S.N.; Shyam, R.

    1991-01-01

    This volume containing the proceedings of the national seminar on physics with radioactive ion beams gives a broad overview of the developments taking place in the area of nuclear physics and accelerator physics with special emphasis on the utilization of radioactive ion beams for various studies. Topics covered include studies on nuclear structure and nuclear astrophysics and the wide ranging applications of radioactive ion beams in these and other areas of nuclear sciences. Papers relevant to INIS are indexed separately

  2. Multiple Electron Stripping of Heavy Ion Beams

    International Nuclear Information System (INIS)

    Mueller, D.; Grisham, L.; Kaganovich, I.; Watson, R. L.; Horvat, V.; Zaharakis, K. E.; Peng, Y.

    2002-01-01

    One approach being explored as a route to practical fusion energy uses heavy ion beams focused on an indirect drive target. Such beams will lose electrons while passing through background gas in the target chamber, and therefore it is necessary to assess the rate at which the charge state of the incident beam evolves on the way to the target. Accelerators designed primarily for nuclear physics or high energy physics experiments utilize ion sources that generate highly stripped ions in order to achieve high energies economically. As a result, accelerators capable of producing heavy ion beams of 10 to 40 Mev/amu with charge state 1 currently do not exist. Hence, the stripping cross-sections used to model the performance of heavy ion fusion driver beams have, up to now, been based upon theoretical calculations. We have investigated experimentally the stripping of 3.4 Mev/amu Kr 7+ and Xe +11 in N2; 10.2 MeV/amu Ar +6 in He, N2, Ar and Xe; 19 MeV/amu Ar +8 in He, N2, Ar and Xe; 30 MeV He 1 + in He, N2, Ar and Xe; and 38 MeV/amu N +6 in He, N2, Ar and Xe. The results of these measurements are compared with the theoretical calculations to assess their applicability over a wide range of parameters

  3. High repetition rate intense ion beam source

    International Nuclear Information System (INIS)

    Hammer, D.A.; Glidden, S.C.; Noonan, B.

    1992-01-01

    This final report describes a ≤ 150kV, 40kA, 100ns high repetition rate pulsed power system and intense ion beam source which is now in operation at Cornell University. Operation of the Magnetically-controlled Anode Plasma (MAP) ion diode at > 100Hz (burst mode for up to 10 pulse bursts) provides an initial look at repetition rate limitations of both the ion diode and beam diagnostics. The pulsed power systems are capable of ≥ 1kHz operation (up to 10 pulse bursts), but ion diode operation was limited to ∼100Hz because of diagnostic limitations. By varying MAP diode operating parameters, ion beams can be extracted at a few 10s of keV or at up to 150keV, the corresponding accelerating gap impedance ranging from about 1Ω to about 10Ω. The ability to make hundreds of test pulses per day at an average repetition rate of about 2 pulses per minute permits statistical analysis of diode operation as a function of various parameters. Most diode components have now survived more than 10 4 pulses, and the design and construction of the various pulsed power components of the MAP diode which have enabled us to reach this point are discussed. A high speed data acquisition system and companion analysis software capable of acquiring pulse data at 1ms intervals (in bursts of up to 10 pulses) and processing it in ≤ min is described

  4. Time resolved ion beam induced charge collection

    International Nuclear Information System (INIS)

    Sexton W, Frederick; Walsh S, David; Doyle L, Barney; Dodd E, Paul

    2000-01-01

    Under this effort, a new method for studying the single event upset (SEU) in microelectronics has been developed and demonstrated. Called TRIBICC, for Time Resolved Ion Beam Induced Charge Collection, this technique measures the transient charge-collection waveform from a single heavy-ion strike with a -.03db bandwidth of 5 GHz. Bandwidth can be expanded up to 15 GHz (with 5 ps sampling windows) by using an FFT-based off-line waveform renormalization technique developed at Sandia. The theoretical time resolution of the digitized waveform is 24 ps with data re-normalization and 70 ps without re-normalization. To preserve the high bandwidth from IC to the digitizing oscilloscope, individual test structures are assembled in custom high-frequency fixtures. A leading-edge digitized waveform is stored with the corresponding ion beam position at each point in a two-dimensional raster scan. The resulting data cube contains a spatial charge distribution map of up to 4,096 traces of charge (Q) collected as a function of time. These two dimensional traces of Q(t) can cover a period as short as 5 ns with up to 1,024 points per trace. This tool overcomes limitations observed in previous multi-shot techniques due to the displacement damage effects of multiple ion strikes that changed the signal of interest during its measurement. This system is the first demonstration of a single-ion transient measurement capability coupled with spatial mapping of fast transients

  5. Focused ion beam milling of carbon fibres

    International Nuclear Information System (INIS)

    Huson, Mickey G.; Church, Jeffrey S.; Hillbrick, Linda K.; Woodhead, Andrea L.; Sridhar, Manoj; Van De Meene, Allison M.L.

    2015-01-01

    A focused ion beam has been used to mill both individual carbon fibres as well as fibres in an epoxy composite, with a view to preparing flat surfaces for nano-indentation. The milled surfaces have been assessed for damage using scanning probe microscopy nano-indentation and Raman micro-probe analysis, revealing that FIB milling damages the carbon fibre surface and covers surrounding areas with debris of disordered carbon. The debris is detected as far as 100 μm from the milling site. The energy of milling as well as the orientation of the beam was varied and shown to have an effect when assessed by Raman spectroscopy. - Highlights: • Focused ion beam (FIB) milling was used to mill flat surfaces on carbon fibres. • Raman spectroscopy showed amorphous carbon was generated during FIB milling. • The amorphous debris is detected as far as 100 μm from the milling site. • This surface degradation was confirmed by nano-indentation experiments.

  6. Time resolved ion beam induced charge collection

    Energy Technology Data Exchange (ETDEWEB)

    SEXTON,FREDERICK W.; WALSH,DAVID S.; DOYLE,BARNEY L.; DODD,PAUL E.

    2000-04-01

    Under this effort, a new method for studying the single event upset (SEU) in microelectronics has been developed and demonstrated. Called TRIBICC, for Time Resolved Ion Beam Induced Charge Collection, this technique measures the transient charge-collection waveform from a single heavy-ion strike with a {minus}.03db bandwidth of 5 GHz. Bandwidth can be expanded up to 15 GHz (with 5 ps sampling windows) by using an FFT-based off-line waveform renormalization technique developed at Sandia. The theoretical time resolution of the digitized waveform is 24 ps with data re-normalization and 70 ps without re-normalization. To preserve the high bandwidth from IC to the digitizing oscilloscope, individual test structures are assembled in custom high-frequency fixtures. A leading-edge digitized waveform is stored with the corresponding ion beam position at each point in a two-dimensional raster scan. The resulting data cube contains a spatial charge distribution map of up to 4,096 traces of charge (Q) collected as a function of time. These two dimensional traces of Q(t) can cover a period as short as 5 ns with up to 1,024 points per trace. This tool overcomes limitations observed in previous multi-shot techniques due to the displacement damage effects of multiple ion strikes that changed the signal of interest during its measurement. This system is the first demonstration of a single-ion transient measurement capability coupled with spatial mapping of fast transients.

  7. Intense ion beam research at Los Alamos

    International Nuclear Information System (INIS)

    Rej, D.J.; Bartsch, R.R.; Davis, H.A.; Faehl, R.J.; Gautier, D.C.; Greenly, J.B.; Henins, I.; Linton, T.W.; Muenchausen, R.E.; Waganaar, W.J.

    1992-01-01

    Two new interdisciplinary programs are underway at Los Alamos involving the physics and technology of intense light ion beams. In contrast to high-power ICF applications, the LANL effort concentrates on the development of relatively low-voltage (50 to 800 kV) and long-pulsewidth (0.1 to 1 μs) beams. The first program involves the 1.2 MV, 300-kJ Anaconda generator which has been fitted with an extraction ion diode. Long pulsewidth ion beams have been accelerated, propagated, and extracted for a variety of magnetic field conditions. The primary application of this beam is the synthesis of novel materials. Initial experiments on the congruent evaporative deposition of metallic and ceramic thin films are reported. The second program involves the development of a 120-keV, 50-kA, 1-μs proton beam for the magnetic fusion program as an ion source for an intense diagnostic neutral beam. Ultra-bright, pulsed neutral beams will be required to successfully measure ion temperatures and thermalized alpha particle energy distributions in large, dense, ignited tokamaks such as ITER

  8. Intense ion beam research at Los Alamos

    International Nuclear Information System (INIS)

    Rej, D.J.; Bartsch, R.R.; Davis, H.A.; Faehl, R.J.; Gautier, D.C.; Greenly, J.B.; Henins, I.; Linton, T.W.; Muenchausen, R.E.; Waganaar, W.J.

    1993-01-01

    Two new interdisciplinary programs are underway at Los Alamos involving the physics and technology of intense light ion beams. In contrast to high-power ICF applications, the LANL effort concentrates on the development of relatively low-voltage (50 to 800 kV) and long pulsewidth (0.1 to 1 μs) beams. The first program involves the 1.2 MV, 300-kJ Anaconda generator which has been fitted with an extraction ion diode. Long pulsewidth ion beams have been accelerated, propagated, and extracted for a variety of magnetic field conditions. The primary application of this beam is the synthesis of novel materials. Initial experiments on the congruent evaporative deposition of metallic and ceramic thin films are reported. The second program involves the development of a 120-keV, 50-kA, 1-μs proton beam for the magnetic fusion program as an ion source for an intense diagnostic neutral beam. Ultra-bright, pulsed neutral beams will be required to successfully measure ion temperatures and thermalized alpha particle distributions in large, dense, ignited tokamaks such as ITER

  9. Multicharged and intense heavy ion beam sources

    International Nuclear Information System (INIS)

    Kutner, V.B.

    1981-01-01

    The cyclotron plasma-are source (PIG), duoplasmatron (DP), laser source (LS), electron beam ion source (EBIS) and electron cyclotron resonance source (ECRS) from the viewpoint of generating intense and high charge state beams are considered. It is pointed out that for the last years three types of multicharged ion sources-EBIS, ECR and LS have been essentially developed. In the EBIS source the Xe 48+ ions are produced. The present day level of the development of the electron-beam ionization technique shows that by means of this technique intensive uranium nuclei beams production becomes a reality. On the ECR source Xe 26+ approximately 4x10 10 h/s, Asub(r)sup(12+) approximately 10 12 h/s intensive ion beams are produced. In the laser source a full number of C 6+ ions during one laser pulse constitutes not less than 10 10 from the 5x10mm 2 emission slit. At the present time important results are obtained pointing to the possibility to separate the ion component of laser plasma in the cyclotron central region. On the PIG source the Xe 15+ ion current up to 10μA per pulse is produced. In the duoplasmatron the 11-charge state of xenon ion beams is reached [ru

  10. MultiSIMNRA: A computational tool for self-consistent ion beam analysis using SIMNRA

    International Nuclear Information System (INIS)

    Silva, T.F.; Rodrigues, C.L.; Mayer, M.; Moro, M.V.; Trindade, G.F.; Aguirre, F.R.; Added, N.; Rizzutto, M.A.; Tabacniks, M.H.

    2016-01-01

    Highlights: • MultiSIMNRA enables the self-consistent analysis of multiple ion beam techniques. • Self-consistent analysis enables unequivocal and reliable modeling of the sample. • Four different computational algorithms available for model optimizations. • Definition of constraints enables to include prior knowledge into the analysis. - Abstract: SIMNRA is widely adopted by the scientific community of ion beam analysis for the simulation and interpretation of nuclear scattering techniques for material characterization. Taking advantage of its recognized reliability and quality of the simulations, we developed a computer program that uses multiple parallel sessions of SIMNRA to perform self-consistent analysis of data obtained by different ion beam techniques or in different experimental conditions of a given sample. In this paper, we present a result using MultiSIMNRA for a self-consistent multi-elemental analysis of a thin film produced by magnetron sputtering. The results demonstrate the potentialities of the self-consistent analysis and its feasibility using MultiSIMNRA.

  11. A new ion-beam laboratory for materials research at the Slovak University of Technology

    Science.gov (United States)

    Noga, Pavol; Dobrovodský, Jozef; Vaňa, Dušan; Beňo, Matúš; Závacká, Anna; Muška, Martin; Halgaš, Radoslav; Minárik, Stanislav; Riedlmajer, Róbert

    2017-10-01

    An ion beam laboratory (IBL) for materials research has been commissioned recently at the Slovak University of Technology within the University Science Park CAMBO located in Trnava. The facility will support research in the field of materials science, physical engineering and nanotechnology. Ion-beam materials modification (IBMM) as well as ion-beam analysis (IBA) are covered and deliverable ion energies are in the range from tens of keV up to tens of MeV. Two systems have been put into operation. First, a high current version of the HVEE 6 MV Tandetron electrostatic tandem accelerator with duoplasmatron and cesium sputtering ion sources, equipped with two end-stations: a high-energy ion implantation and IBA end-station which includes RBS, PIXE and ERDA analytical systems. Second, a 500 kV implanter equipped with a Bernas type ion source and two experimental wafer processing end-stations. The facility itself, operational experience and first IBMM and IBA experiments are presented together with near-future plans and ongoing development of the IBL.

  12. Atmosphere influence on in situ ion beam analysis of thin film growth

    International Nuclear Information System (INIS)

    Lin, Yuping; Krauss, A.R.; Gruen, D.M.; Chang, R.P.H.; Auciello, O.H.; Schultz, J.A.

    1994-01-01

    In situ, nondestructive surface characterization of thin-film growth processes in an environment of chemically active gas at pressures of several mTorr is required both for the understanding of growth processes in multicomponent films and layered heterostructures and for the improvement of process reproducibility and device reliability. The authors have developed a differentially pumped pulsed ion beam surface analysis system that includes ion scattering spectroscopy (ISS) and direct recoil spectroscopy (DRS), coupled to an automated ion beam sputter-deposition system (IBSD), to study film growth processes in an environment of chemically active gas, such as required for the growth of oxide, nitride, or diamond thin films. The influence of gas-phase scattering and gas-surface interactions on the ISS and DRS signal intensity and peak shape have been studied. From the intensity variation as a function of ambient gas pressure, the authors have calculated the mean free path and the scattering cross-section for a given combination of primary ion species and ambient gas. Depending on the system geometry and the combination of primary beam and background, it is shown that surface-specific data can be obtained during thin-film growth at pressures ranging from a few mtorr to approximately 1 Torr. Detailed information such as surface composition, structure, and film growth mechanism may be obtained in real-time, making ion beam analysis an ideal nondestructive, in situ probe of thin-film growth processes

  13. High energy Xe{sup +} ion beam induced ripple structures on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Hanisch, Antje; Grenzer, Joerg; Facsko, Stefan; Winkler, Ingolf [Forschungszentrum Dresden-Rossendorf, Institute for Ion Beam Physics and Materials Research, Dresden (Germany); Biermanns, Andreas; Grigorian, Souren; Pietsch, Ullrich [University of Siegen (Germany). Institute of Physics

    2008-07-01

    Ion beam bombardment on semiconductor surfaces leads to well-defined morphological structures in the nanoscale range. Due to the impact of ions a self-organized wave-like surface structure develops. Ion bombardment causes an amorphization of a surface-adjacent layer of several nanometers and creates a periodical structure on the surface as well as at the amorphous-crystalline interface. We investigate the dependence of the periodicity on the crystallography of (100) silicon bombarded with Xe{sup +} ions, the ion beam incidence and the azimutal angle of the sample surface. So far we found that the ripple wavelength scales with the ion energy in a range of 5 to 70 keV. In order to understand the initiation of the ripple formation we also ask the question which role the initial surface structure plays. Therefore we investigate the formation of ripples on pre-structured and rough surfaces such as wafers with an intentional miscut. Therefore, we not only introduce a certain initial roughness but also vary the orientation of the (100) lattice plane in respect to the surface. We distinguish between ion beam induced surface effects (sputter erosion) and the influence of the crystalline Si lattice (strain) on the ripple formation.

  14. Nature of gallium focused ion beam induced phase transformation in 316L austenitic stainless steel

    International Nuclear Information System (INIS)

    Babu, R. Prasath; Irukuvarghula, S.; Harte, A.; Preuss, M.

    2016-01-01

    The microstructural evolution and chemistry of the ferrite phase (α), which transforms from the parent austenite phase (γ) of 316L stainless steel during gallium (Ga) ion beam implantation in Focused Ion Beam (FIB) instrument was systematically studied as a function of Ga"+ ion dose and γ grain orientations. The propensity for initiation of γ → α phase transformation was observed to be strongly dependent on the orientation of the γ grain with respect to the ion beam direction and correlates well with the ion channelling differences in the γ orientations studied. Several α variants formed within a single γ orientation and the sputtering rate of the material, after the γ → α transformation, is governed by the orientation of α variants. With increased ion dose, there is an evolution of orientation of the α variants towards a variant of higher Ga"+ channelling. Unique topographical features were observed within each specific γ orientation that can be attributed to the orientation of defects formed during the ion implantation. In most cases, γ and α were related by either Kurdjumov-Sachs (KS) or Nishiyama-Wassermann (NW) orientation relationship (OR) while in few, no known OR's were identified. While our results are consistent with gallium enrichment being the cause for the γ → α phase transformation, some observations also suggest that the strain associated with the presence of gallium atoms in the lattice has a far field stress effect that promotes the phase transformation ahead of gallium penetration.

  15. In-situ capability of ion beam modification and characterization of materials at Los Alamos National Laboratory

    International Nuclear Information System (INIS)

    Yu, N.; Nastasi, M.; Tesmer, J.R.; Hollander, M.G.; Evans, C.R.; Maggiore, C.J.; Levine, T.E.

    1994-01-01

    The capability of in-situ ion beam modification and characterization of materials developed at Los Alamos National Laboratory is described. A beam-line from a 3 MV tandem accelerator and a beam-line from a 200 kV ion implanter are joined together in an in-situ target chamber. The chamber is equipped with a cold and hot sample stage with a temperature range from -100 to 500 C. The angular (sample spin and basal rotation) motions and translational motions of the sample stage are controlled by a multi-axis goniometer. This chamber provides a unique capability to conduct a temperature dependent experiment of ion irradiation and sequential backscattering and channeling analysis. The efficiency and reliability of in-situ ion beam techniques are demonstrated by two examples, irradiation damage in (100) MgAl 2 O 4 spinel crystals and ion-beam-induced densification of zirconia sol-gel thin films

  16. Production of atomic negative ion beams of the Group IA elements

    International Nuclear Information System (INIS)

    Alton, G.D.; Mills, G.D.

    1988-01-01

    A method has been developed which enables the direct sputter generation of atomic negative ion beams of all members of the Group IA elements (Li, Na, K, Rb, and Cs). The method consists of the use of sputter samples formed by pressing mixtures of the carbonates of the Group IA elements and 10% (atomic) Cu, Ag, or other metal powder. The following intensities are typical of those observed from carbonate samples subjected to /approximately/3 KeV cesium ion bombardment: Li - : ≥0.5 μA; Na - : ≥0.5 μA; K - : ≥0.5 μA; Rb - : ≥0.5 μA; Cs - : ≥0.2 μA. 7 refs., 2 figs., 1 tab

  17. Friction of self-lubricating surfaces by ion beam techniques. Final technical report

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharya, R.S.; Rai, A.K.

    1992-05-01

    UES, Inc. conducted a research and development program designed to establish conditions for ion implantation/mixing of suitable additives into the surfaces of bulk ceramics and metals for obtaining self-lubricating low friction and wear characteristics. The substrates considered were ZrO{sub 2}, Al{sub 2}O{sub 3}, Si{sub 3}N{sub 4}, steel and Ni-base superalloy. The lubricant additives chosen were BaF{sub 2}/CaF{sub 2}Ag, MoS{sub 2}, WS{sub 2}and B{sub 2}O{sub 3}. The initial tasks of the program were to synthesis these lubricant compounds by co-implantation of constituent elements if sufficient beams of desired elements were obtained. The final tasks were to investigate high energy (MeV) ion mixing of deposited coatings as well as to investigate ion beam assisted deposition using low energy ion beams. It was shown that MoS{sub 2} can be synthesized by co-implantation of Mo{sup +} and S{sup +} in ceramic materials with appropriate choice of energies to obtain nearly overlapping depth profiles. The sliding life of DC magnetron sputtered MoS{sub 2} films of thicknesses {approximately}7500{Angstrom} on ceramic materials such as sapphire, Si{sub 3}N{sub 4} and ZrO{sub 3} were improved by ten to thousand fold after 2 Mev Ag{sup +} ion mixing. Ion beam assisted deposition (IBAD) and ion beam mixing were utilized to fabricate self-lubricating coatings of CaF{sub 2}/Ag and BaF/CaF{sub 2}/Ag composites.

  18. The quest for crystalline ion beams

    CERN Document Server

    Schramm, U; Bussmann, M; Habs, D

    2002-01-01

    The phase transition of an ion beam into its crystalline state has long been expected to dramatically influence beam dynamics beyond the limitations of standard accelerator physics. Yet, although considerable improvement in beam cooling techniques has been made, strong heating mechanisms inherent to existing high-energy storage rings have prohibited the formation of the crystalline state in these machines up to now. Only recently, laser cooling of low-energy beams in the table-top rf quadrupole storage ring PAaul Laser cooLing Acceleration System (PALLAS) has lead to the experimental realization of crystalline beams. In this article, the quest for crystalline beams as well as their unique properties as experienced in PALLAS will be reviewed.

  19. Cooled heavy ion beams at the ESR

    International Nuclear Information System (INIS)

    Steck, M.; Beckert, K.; Bosch, F.; Eickhoff, H.; Franzke, B.; Klepper, O.; Nolden, F.; Reich, H.; Schlitt, B.; Spaedtke, P.; Winkler, T.

    1996-01-01

    The storage ring ESR has been used in various operational modes for experiments with electron cooled heavy ion beams. Besides the standard storage mode including injection and beam accumulation the deceleration of highly charged ions has been demonstrated. Beams of highly charged ions have been injected and accumulated and finally decelerated to a minimum energy of 50 MeV/u. An ultraslow extraction method using charge changing processes is now also available for cooled beams of highly charged ions. For in ring experiments the internal gas jet and the cold electron beam of the cooling system are applied as targets. High precision mass spectrometry by Schottky noise detection has been demonstrated. Operation at transition energy has been achieved with cooled beams opening the field for experiments which require an isochronous revolution of the ions. (orig.)

  20. Filamentation of a converging heavy ion beam

    International Nuclear Information System (INIS)

    Lee, E.P.; Buchanan, H.L.; Rosenbluth, M.N.

    1980-01-01

    A major concern in the use of heavy ion beams as igniters in pellet fusion systems is the vulnerability of the beam to the transverse flamentation instability. The undesirable consequence of this mode is the transverse heating of the beam to the extent that convergence on the pellet becomes impossible. This work considers the case of a beam injected into a gas filled reactor vessel, where finite pulse length and propagation distance play an important role in limiting growth. Two geometries are analyzed: a nonconverging case where the radius at injection is nearly equal to the desired radius at the pellet, and a converging case in which the injection radius is large and the beam is pre-focused to converge at the target. It is found that a cold beam will be severely disrupted if the product of the magnetic plasma frequency and the propagation distance is much larger than unity

  1. Mutation induction of orchids by ion beams

    International Nuclear Information System (INIS)

    Affrida Abu Hassan; Zaiton Ahmad; Sakinah Ariffin; Oono, Yutaka; Hase, Yoshihiro; Shikazono; Naoya; Narumi, Issay; Tanaka, Atsushi

    2010-01-01

    Mutation induction using ionizing radiation provides an effective alternative means for improvement of orchids. In this study, ion beams were used because they have much higher linear energy transfer (LET) than X-rays or gamma rays, and subsequently lead to higher mutation frequency and broad mutation spectrum. The proto corm-like bodies (PLBs) of three orchid species (Dendrobium crumenatum, Dendrobium mirbellianum) were irradiated at various doses with 320 MeV 12 C 6+ ions accelerated by Azimuthally Varying Field (AVF) cyclotron at JAEAs Takasaki Ion Accelerators for Advanced Radiation Application (TIARA). The optimum irradiation condition and the effect of irradiation on each species were studied, particularly on flower colour and morphology, flowering habit and insect resistance. Dose effects on plantlet regeneration for each species were also obtained. Some morphological changes were observed in flowers of Dendrobium crumenatum, whilst one insect resistant mutant was obtained in Dendrobium mirbellianum. (author)

  2. Deflagration wave formed by ion beam, 3

    International Nuclear Information System (INIS)

    Niu, Keishiro; Abe, Takashi; Tamba, Moritake.

    1980-01-01

    An analysis is given for the structure of the deflagration wave which is formed in a target bombarded by an ion beam. Stationary deflagration and/or detonation waves are formed at the surface of the target in a case in which the reaction energy of direct fusion and/or the beam energy deposited in the target are less than a critical value. On the other hand, no solution for stationary wave exists, if the energy deposited in the wave exceeds a critical value. In the latter case, the time-dependent fundamental equations reduce approximately to a self-similar type of equations. Numerical integrations are carried out for this type of differential equations, and an example of self-similar deflagration wave numerically obtained is plotted in the figures. (author)

  3. Charge neutralization of small ion beam clumps

    Energy Technology Data Exchange (ETDEWEB)

    Welch, D R [Mission Research Corp., Albuquerque, NM (United States); Olson, C L; Hanson, D L [Sandia National Labs., Albuquerque, NM (United States)

    1997-12-31

    The mega-ampere currents associated with light ion fusion (LIF) require excellent charge neutralization to prevent divergence growth. As the size and space-charge potential of a beam clump or `beamlet` become small (submillimeter size and kilovolt potentials), the neutralization becomes increasingly difficult. Linear theory predicts that plasma electrons cannot neutralize potentials < {phi}{sub crit} = (1/2)m{sub e}v{sub i}{sup 2}/e, where m{sub e} is the electron mass and v{sub i} is the ion beam velocity. A non-uniform beam would, therefore, have regions with potentials sufficient to add divergence to beam clumps. The neutralization of small beamlets produced on the SABLE accelerator and in numerical simulation has supported the theory, showing a plateau in divergence growths as the potential in the beamlet exceeds {phi}{sub crit}. (author). 1 tab., 2 figs., 4 refs.

  4. The TMX heavy ion beam probe

    International Nuclear Information System (INIS)

    Hallock, G.A.

    1994-01-01

    A heavy ion beam probe has been used to measure the radial space potential distribution in the central cell of TMX. This was the first beam probe system to utilize computer control, CAMAC instrumentation, and fast time response for broadband fluctuation capabilities. The fast time response was obtained using off-line processing of the energy analyzer detector signals and wideband transimpedance amplifiers. The on-axis space potential was found to be 300--400 V, with φ e /T ec ∼8. The radial potential profile is parabolic when gas box fueling is used. The frequency of observed fluctuations was found to agree with the E x B plasma rotation frequency during the discharge. The measured Tl ++ secondary ion current level is consistent with calculations, given reasonable assumptions for beam attenuation

  5. Ion beam irradiation effects on aromatic polymers

    International Nuclear Information System (INIS)

    Shukushima, Satoshi; Ueno, Keiji

    1995-01-01

    We studied the optical and thermal properties of aromatic polymer films which had been irradiated with 1 MeV H + , H 2 + and He + ions. The examined aromatic polymers were polyetherether ketone(PEEK), polyetherimide(PEI), polyether sulfon(PES), polysulfon(PSF), and polyphenylene sulfide(PPS). The optical densities at 300nm of PES and PSF greatly increased after the irradiation. The optical densities at 400nm of all the examined polymer lineally increased with the irradiation dose. The PEEK film which had been irradiated with 1 MeV H + was not deformed above melting point. This demonstrates that cross-linking occurs in PEEK films by ion beam irradiation. As for the effects, depending on the mass of the irradiated ions, it was found that the ions with a high mass induced larger effects on the aromatic polymers for the same absorption energy. (author)

  6. Target design for heavy ion beam fusion

    International Nuclear Information System (INIS)

    Meyer-ter-Vehn, J.; Metzler, N.

    1981-07-01

    Target design for Heavy Ion Beam Fusion and related physics are discussed. First, a modified version of the Kidder-Bodner model for pellet gain is presented and is used to define the working point (Esub(beam) = 4.8 MJ, Gain 83) for a reactor size target. Secondly, stopping of heavy ions in hot dense plasma is investigated and numerical results for stopping powers and ranges of 10 GeV Bi-ions in Pb, Li, and PbLi-alloy are given. Finally, results of an explicit implosion calculation, using the 1-D code MINIHY, are discussed in detail. The hydrodynamic efficiency is found to be about 5%. Special attention is given to the shock sequence leading to the ignition configuration. Also the growth of Rayleigh-Taylor instability at the absorber-pusher interface is estimated. (orig.)

  7. Probing surface magnetism with ion beams

    International Nuclear Information System (INIS)

    Winter, H.

    2007-01-01

    Ion beams can be used to probe magnetic properties of surfaces by a variety of different methods. Important features of these methods are related to trajectories of atomic projectiles scattered from the surface of a solid target and to the electronic interaction mechanisms in the surface region. Both items provide under specific conditions a high sensitivity for the detection of magnetic properties in the region at the topmost layer of surface atoms. This holds in particular for scattering under planar surface channeling conditions, where under grazing impact atoms or ions are reflected specularly from the surface without penetration into the subsurface region. Two different types of methods are employed based on the detection of the spin polarization of emitted or captured electrons and on spin blocking effects for capture into atomic terms. These techniques allow one to probe the long range and short range magnetic order in the surface region

  8. Surface generation of negative hydrogen ion beams

    International Nuclear Information System (INIS)

    Bommel, P.J.M. van.

    1984-01-01

    This thesis describes investigations on negative hydrogen ion sources at the ampere level. Formation of H - ions occurs when positive hydrogen ions capture two electrons at metal surfaces. The negative ionization probability of hydrogen at metal surfaces increases strongly with decreasing work function of the surface. The converters used in this study are covered with cesium. Usually there are 'surface plasma sources' in which the hydrogen source plasma interacts with a converter. In this thesis the author concentrates upon investigating a new concept that has converters outside the plasma. In this approach a positive hydrogen ion beam is extracted from the plasma and is subsequently reflected from a low work function converter surface. (Auth.)

  9. PIXE and ion beam analysis in forensics

    International Nuclear Information System (INIS)

    Bailey, Melanie; Warmenhoven, John; Chrislopher, Matt; Kirkby, Karen; Palitsin, Vladimir; Grime, Geoff; Jeynes, Chris; Jones, Brian; Wenn, Roger

    2013-01-01

    Full text: University of Surrey has, for the past four years, collaborated with police institutions from across Europe and the rest of the world lo scope potential applications of ion beam analysis (IBA) in forensic science. In doing this we have consulted practitioners across a range of forensic disciplines, and critically compared IBA with conventional characterisation techniques to investigate the areas in which IBA can add evidential value. In this talk, the results of this feasibility study will be presented, showing the types of sample for which IBA shows considerable promise. We will show how a combination of PIXE with other IBA techniques (EBS, PIGE, MeV-SIMS) can be used to give unprecedented characterisation of forensic samples and comment on the significance of these results for forensic casework. We will also show cases where IBA not appear to add any significant improvement over conventional techniques. (author)

  10. Current neutralization of converging ion beams

    International Nuclear Information System (INIS)

    Mosher, D.

    1978-01-01

    It is desired to consider the problem of current neutralization of heavy ion beams traversing gas backgrounds in which the conductivity changes due to beam heating and beam convergence. The procedure is to determine Green's-function solutions to the magnetic-diffusion equation derived from Maxwell's equations and an assumed scaler-plasma conductivity sigma for the background-electron current density j/sub e/. The present calculation is more general than some previously carried out in that arbitrary time variations for the beam current j/sub b/ and conductivity are allowed and the calculation is valid for both weak and strong neutralization. Results presented here must be combined with an appropriate energy-balance equation for the heated background in order to obtain the neutralization self-consistently

  11. Focused ion beam technology and ultimate applications

    International Nuclear Information System (INIS)

    Gierak, Jacques

    2009-01-01

    In this topical review, the potential of the focused ion beam (FIB) technology and ultimate applications are reviewed. After an introduction to the technology and to the operating principles of liquid metal ion sources (LMIS), of ion optics and instrument architectures, several applications are described and discussed. First, the application of FIB for microcircuit inspection, metrology and failure analysis is presented. Then, we introduce and illustrate some advanced patterning schemes we propose as next generation FIB processing examples. These patterning schemes are (i) local defect injection or smoothing in magnetic thin film direct patterning, (ii) functionalization of graphite substrates to guide organization of clusters, (iii) local and selective epitaxy of III–V semiconductor quantum dots and (iv) FIB patterned solid-state nanopores for biological molecules manipulation and analysis. We conclude this work by giving our vision of the future developments for FIB technology. (topical review)

  12. Image-projection ion-beam lithography

    International Nuclear Information System (INIS)

    Miller, P.A.

    1989-01-01

    Image-projection ion-beam lithography is an attractive alternative for submicron patterning because it may provide high throughput; it uses demagnification to gain advantages in reticle fabrication, inspection, and lifetime; and it enjoys the precise deposition characteristics of ions which cause essentially no collateral damage. This lithographic option involves extracting low-mass ions (e.g., He + ) from a plasma source, transmitting the ions at low voltage through a stencil reticle, and then accelerating and focusing the ions electrostatically onto a resist-coated wafer. While the advantages of this technology have been demonstrated experimentally by the work of IMS (Austria), many difficulties still impede extension of the technology to the high-volume production of microelectronic devices. We report a computational study of a lithography system designed to address problem areas in field size, telecentricity, and chromatic and geometric aberration. We present a novel ion-column-design approach and conceptual ion-source and column designs which address these issues. We find that image-projection ion-beam technology should in principle meet high-volume-production requirements. The technical success of our present relatively compact-column design requires that a glow-discharge-based ion source (or equivalent cold source) be developed and that moderate further improvement in geometric aberration levels be obtained. Our system requires that image predistortion be employed during reticle fabrication to overcome distortion due to residual image nonlinearity and space-charge forces. This constitutes a software data preparation step, as do correcting for distortions in electron lithography columns and performing proximity-effect corrections. Areas needing further fundamental work are identified

  13. Ion beam analysis and modern materials science

    International Nuclear Information System (INIS)

    Feldman, Leonard C.

    2012-01-01

    Full text: Modern research has provided the means of creating materials structures controlled at the atomic scale. Familiar examples include the formation of hetero-structures grown with atomic precision, nanostructures with designed electronic properties and new organic structures employing the richness of organic chemistry. The current forefront of such materials research includes the creation of new materials for energy and electronics applications. The electron transport properties of these diverse materials, and hence their performance, is invariably linked by the basic interactions at the interface. Interfaces are the critical component, and least understood aspect, of almost all such materials-based structures. Ion beam analysis, and its role in interfacial definition, will be described in the context of a number of such forefront projects underway at the Rutgers Institute for Advanced Materials, Devices and Nanotechnology (IAMDN). These include: 1) quantitative analysis of self-assembled monolayers on organic single crystals resulting in enhanced surface mobility and more effective organic field effect transistors, 2) monolayer scale interfacial analysis of complex oxide hetero-structures to elucidate the properties of the enhanced two-dimensional electron mobility and 3) characterization of the semiconductor- dielectric interface in the SiC/SiO2 system, with application for energy efficient power transmission. Despite extraordinary advances in synthesis, interface properties continue as an uncontrolled region of hetero-materials formation. Their understanding requires the detailed analysis of a complement of tools including ion beam analysis. Fellow Researchers: R. A. Bartynski, L.C.Feldman, E. Garfunkel, T. Gustafsson, H.D. Lee, D. Mastrogiovanni, V. Podzorov, L. S. Wielunski, J. R. Williams(Auburn), G. Liu, J. Williams, S. Dhar. (author)

  14. Wave Propagation in an Ion Beam-Plasma System

    DEFF Research Database (Denmark)

    Jensen, T. D.; Michelsen, Poul; Juul Rasmussen, Jens

    1979-01-01

    The spatial evolution of a velocity- or density-modulated ion beam is calculated for stable and unstable ion beam plasma systems, using the linearized Vlasov-Poisson equations. The propagation properties are found to be strongly dependent on the form of modulation. In the case of velocity...

  15. Development of a focused ion beam micromachining system

    Energy Technology Data Exchange (ETDEWEB)

    Pellerin, J.G.; Griffis, D.; Russell, P.E.

    1988-12-01

    Focused ion beams are currently being investigated for many submicron fabrication and analytical purposes. An FIB micromachining system consisting of a UHV vacuum system, a liquid metal ion gun, and a control and data acquisition computer has been constructed. This system is being used to develop nanofabrication and nanomachining techniques involving focused ion beams and scanning tunneling microscopes.

  16. MEV Energy Electrostatic Accelerator Ion Beam Emittance Measurement

    OpenAIRE

    I.G. Ignat’ev; M.I. Zakharets; S.V. Kolinko; D.P. Shulha

    2014-01-01

    The testing equipment was designed, manufactured and tried out permitting measurements of total current, current profile and emittance of an ion beam extracted from the ion beam. MeV energy electrostatic accelerator ion H + beam emittance measurement results are presented.

  17. Plasma and ion beam processing at Los Alamos

    International Nuclear Information System (INIS)

    Rej, D.J.; Davis, H.A.; Henins, I.

    1994-01-01

    Efforts are underway at Los Alamos National Laboratory to utilize plasma and intense ion beam science and technology of the processing of advanced materials. A major theme involves surface modification of materials, e.g., etching, deposition, alloying, and implantation. In this paper, we concentrate on two programs, plasma source ion implantation and high-intensity pulsed ion beam deposition

  18. ECR ion source based low energy ion beam facility

    Indian Academy of Sciences (India)

    Mass analyzed highly charged ion beams of energy ranging from a few keV to a few MeV plays an important role in various aspects of research in modern physics. In this paper a unique low energy ion beam facility (LEIBF) set up at Nuclear Science Centre (NSC) for providing low and medium energy multiply charged ion ...

  19. Development of focused ion beam systems with various ion species

    International Nuclear Information System (INIS)

    Ji Qing; Leung, K.-N.; King, Tsu-Jae; Jiang Ximan; Appleton, Bill R.

    2005-01-01

    Conventional focused ion beam systems employ a liquid-metal ion source (LMIS) to generate high-brightness beams, such as Ga + beams. Recently there has been an increased need for focused ion beams in areas like biological studies, advanced magnetic-film manufacturing and secondary-ion mass spectroscopy (SIMS). In this article, status of development on focused ion beam systems with ion species such as O 2 + , P + , and B + will be reviewed. Compact columns for forming focused ion beams from low energy (∼3keV), to intermediate energy (∼35keV) are discussed. By using focused ion beams, a SOI MOSFET is fabricated entirely without any masks or resist

  20. A Study on the Ion Beam Extraction using Duo-PiGatron Ion source for Vertical Type Ion Beam Facility

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Bom Sok; Lee, Chan young; Lee, Jae Sang [KAERI, Daejeon (Korea, Republic of)

    2015-05-15

    In Korea Multipurpose Accelerator Complex (KOMAC), we have started ion beam service in the new beam utilization building since March this year. For various ion beam irradiation services, we are developed implanters such as metal (150keV/1mA), gaseous (200keV/5mA) and high current ion beam facility (20keV/150mA). One of the new one is a vertical type ion beam facility without acceleration tube (60keV/20mA) which is easy to install the sample. After the installation is complete, it is where you are studying the optimal ion beam extraction process. Detailed experimental results will be presented. Vertical Type Ion Beam Facility without acceleration tube of 60keV 20mA class was installed. We successfully extracted 60keV 20mA using Duo- PiGatron Ion source for Vertical Type Ion Beam Facility. Use the BPM and Faraday-cup, is being studied the optimum conditions of ion beam extraction.

  1. Mechanical and tribological properties of ion beam-processed surfaces

    International Nuclear Information System (INIS)

    Kodali, P.

    1998-01-01

    The intent of this work was to broaden the applications of well-established surface modification techniques and to elucidate the various wear mechanisms that occur in sliding contact of ion-beam processed surfaces. The investigation included characterization and evaluation of coatings and modified surfaces synthesized by three surface engineering methods; namely, beam-line ion implantation, plasma-source ion implantation, and DC magnetron sputtering. Correlation among measured properties such as surface hardness, fracture toughness, and wear behavior was also examined. This dissertation focused on the following areas of research: (1) investigating the mechanical and tribological properties of mixed implantation of carbon and nitrogen into single crystal silicon by beam-line implantation; (2) characterizing the mechanical and tribological properties of diamond-like carbon (DLC) coatings processed by plasma source ion implantation; and (3) developing and evaluating metastable boron-carbon-nitrogen (BCN) compound coatings for mechanical and tribological properties. The surface hardness of a mixed carbon-nitrogen implant sample improved significantly compared to the unimplanted sample. However, the enhancement in the wear factor of this sample was found to be less significant than carbon-implanted samples. The presence of nitrogen might be responsible for the degraded wear behavior since nitrogen-implantation alone resulted in no improvement in the wear factor. DLC coatings have low friction, low wear factor, and high hardness. The fracture toughness of DLC coatings has been estimated for the first time. The wear mechanism in DLC coatings investigated with a ruby slider under a contact stress of 1 GPa was determined to be plastic deformation. The preliminary data on metastable BCN compound coatings indicated high friction, low wear factor, and high hardness

  2. Important atomic physics issues for ion beam fusion

    International Nuclear Information System (INIS)

    Bangerter, Roger.

    1986-01-01

    The nearly endless variety of interesting and challenging problems makes physics research enjoyable. Most of us would choose to be physicists even if physics had no practical applications. However, physics does have practical applications. This workshop deals with one of those applications, namely ion beam fusion. Not all interesting and challenging atomic physics questions are important for ion beam fusion. This paper suggests some questions that may be important for ion beam fusion. It also suggests some criteria for determining if a question is only interesting, or both interesting and important. Importance is time dependent and, because of some restrictions on the flow of information, also country dependent. In the early days of ion beam fusion, it was important to determine if ion beam fusion made sense. Approximate answers and bounds on various parameters were required. Accurate, detailed answers were not needed. Because of the efforts of many people attending this workshop, we now know that ion beam fusion does make some sense. We must still determine if ion beam fusion truly makes good sense. If it does make good sense, we must determine how to make it work. Accurate detailed answers are becoming increasingly important. (author)

  3. Ion beam deposited epitaxial thin silicon films

    International Nuclear Information System (INIS)

    Orrman-Rossiter, K.G.; Al-Bayati, A.H.; Armour, D.G.; Donnelly, S.E.; Berg, J.A. van den

    1991-01-01

    Deposition of thin films using low energy, mass-separated ion beams is a potentially important low temperature method of producing epitaxial layers. In these experiments silicon films were grown on Si (001) substrates using 10-200 eV 28 Si + and 30 Si + ions at substrate temperatures in the range 273-1073 K, under ultrahigh-vacuum conditions (deposition pressure -7 Pa). The film crystallinity was assessed in situ using medium energy ion scattering (MEIS). Films of crystallinity comparable to bulk samples were grown using 10-40 eV 28 Si + and 30 Si + ions at deposition temperatures in the range 623-823 K. These experiments confirmed the role of key experimental parameters such as ion energy, substrate temperature during deposition, and the surface treatment prior to deposition. It was found that a high temperature in situ anneal (1350-1450 K) gave the best results for epitaxial nucleation, whereas low energy (20-40 eV) Cl + ion bombardment resulted in amorphous film growth. The deposition energy for good epitaxial growth indicates that it is necessary to provide enough energy to induce local mobility but not to cause atomic displacements leading to the buildup of stable defects, e.g. divacancies, below the surface layer of the growing film. (orig.)

  4. Ion beam characterisation of nanometre structures

    Energy Technology Data Exchange (ETDEWEB)

    Persson, Leif

    1995-08-01

    Ion beam analysis methods have been applied to the study of technologically important issues in III-V nanometre structure science. In the first application, the incorporation of hydrogen in GaAs during electron cyclotron resonance etching was studied using the {sup 1}H({sup 15}N,{alpha}{gamma}){sup 12}C reaction analysis method. The major part of the work was carried out using mass and energy dispersive Recoil Spectrometry (RS). RS was used to study reactions of thin metal films InP reactions. The metals investigated include Cr, Ti, Ni, Pd and Pt and the reactions as a function of temperature were studied to elucidate suitable compounds for contacts and metallization. Using {sup 127}I in the 0.5A to 0.7A MeV region as the projectile, the depth profiles for the different elements were obtained. Complementary measurements with X-ray diffraction to obtain chemical phase information as well as scanning electron microscopy to study the surface morphology were also carried out. 59 refs, 15 figs.

  5. A radioactive ion beam facility using photofission

    CERN Document Server

    Diamond, W T

    1999-01-01

    Use of a high-power electron linac as the driver accelerator for a Radioactive Ion Beam (RIB) facility is proposed. An electron beam of 30 MeV and 100 kW can produce nearly 5x10 sup 1 sup 3 fissions/s from an optimized sup 2 sup 3 sup 5 U target and about 60% of this from a natural uranium target. An electron beam can be readily transmitted through a thin window at the exit of the accelerator vacuum system and transported a short distance through air to a water-cooled Bremsstrahlung-production target. The Bremsstrahlung radiation can, in turn, be transported through air to the isotope-production target. This separates the accelerator vacuum system, the Bremsstrahlung target and the isotope-production target, reducing remote handling problems. The electron beam can be scanned over a large target area to reduce the power density on both the Bremsstrahlung and isotope-production targets. These features address one of the most pressing technological challenges of a high-power RIB facility, namely the production o...

  6. Ion beam characterisation of nanometre structures

    International Nuclear Information System (INIS)

    Persson, Leif.

    1995-08-01

    Ion beam analysis methods have been applied to the study of technologically important issues in III-V nanometre structure science. In the first application, the incorporation of hydrogen in GaAs during electron cyclotron resonance etching was studied using the 1 H( 15 N,αγ) 12 C reaction analysis method. The major part of the work was carried out using mass and energy dispersive Recoil Spectrometry (RS). RS was used to study reactions of thin metal films InP reactions. The metals investigated include Cr, Ti, Ni, Pd and Pt and the reactions as a function of temperature were studied to elucidate suitable compounds for contacts and metallization. Using 127 I in the 0.5A to 0.7A MeV region as the projectile, the depth profiles for the different elements were obtained. Complementary measurements with X-ray diffraction to obtain chemical phase information as well as scanning electron microscopy to study the surface morphology were also carried out. 59 refs, 15 figs

  7. Materials processing with intense pulsed ion beams

    International Nuclear Information System (INIS)

    Rej, D.J.; Davis, H.A.; Olson, J.C.

    1996-01-01

    We review research investigating the application of intense pulsed ion beams (IPIBs) for the surface treatment and coating of materials. The short range (0.1-10 μm) and high-energy density (1-50 J/cm 2 ) of these short-pulsed (≤ 1 μs) beams (with ion currents I = 5 - 50 kA, and energies E = 100 - 1000 keV) make them ideal to flash-heat a target surface, similar to the more familiar pulsed laser processes. IPIB surface treatment induces rapid melt and solidification at up to 10 10 K/s to cause amorphous layer formation and the production of non-equilibrium microstructures. At higher energy density the target surface is vaporized, and the ablated vapor is condensed as coatings onto adjacent substrates or as nanophase powders. Progress towards the development of robust, high-repetition rate IPIB accelerators is presented along with economic estimates for the cost of ownership of this technology

  8. Intense ion beams for inertial confinement fusion

    International Nuclear Information System (INIS)

    Mehlhorn, T.A.

    1997-01-01

    Intense beams of light of heavy ions are being studied as inertial confinement fusion (ICF) drivers for high yield and energy. Heavy and light ions have common interests in beam transport, targets, and alternative accelerators. Self-pinched transport is being jointly studied. This article reviews the development of intense ion beams for ICF. Light-ion drivers are highlighted because they are compact, modular, efficient and low cost. Issues facing light ions are: (1) decreasing beam divergence; (2) increasing beam brightness; and (3) demonstrating self-pinched transport. Applied-B ion diodes are favored because of efficiency, beam brightness, perceived scalability, achievable focal intensity, and multistage capability. A light-ion concept addressing these issues uses: (1) an injector divergence of ≤ 24 mrad at 9 MeV; (2) two-stage acceleration to reduce divergence to ≤ 12 mrad at 35 MeV; and (3) self-pinched transport accepting divergences up to 12 mrad. Substantial progress in ion-driven target physics and repetitive ion diode technology is also presented. Z-pinch drivers are being pursued as the shortest pulsed power path to target physics experiments and high-yield fusion. However, light ions remain the pulsed power ICF driver of choice for high-yield fusion energy applications that require driver standoff and repetitive operation. 100 refs

  9. The production of accelerated radioactive ion beams

    International Nuclear Information System (INIS)

    Olsen, D.K.

    1993-01-01

    During the last few years, substantial work has been done and interest developed in the scientific opportunities available with accelerated radioactive ion beams (RIBs) for nuclear physics, astrophysics, and applied research. This interest has led to the construction, development, and proposed development of both first- and second-generation RIB facilities in Asia, North America, and Europe; international conferences on RIBs at Berkeley and Louvain-la-Neuve; and many workshops on specific aspects of RIB production and science. This paper provides a discussion of both the projectile fragmentation, PF, and isotope separator on-line, ISOL, approach to RIB production with particular emphasis on the latter approach, which employs a postaccelerator and is most suitable for nuclear structure physics. The existing, under construction, and proposed facilities worldwide are discussed. The paper draws heavily from the CERN ISOLDE work, the North American IsoSpin Laboratory (ISL) study, and the operating first-generation RIB facility at Louvain-la-Neuve, and the first-generation RIB project currently being constructed at ORNL

  10. Inertial fusion with heavy ion beams

    International Nuclear Information System (INIS)

    Bock, R.; Hofmann, I.; Arnold, R.

    1984-01-01

    The underlying principle of inertial confinement is the irradiation of a small pellet filled with DT-fuel by laser or particle beams in order to compress the fuel and ignite it. As 'drivers' for this process large laser installations and light-ion devices have been built since then and the results obtained during the past few years have increased our confidence, that the ignition conditions might be reached. Further conditions, however, have to be fulfilled for operating a power plant. In particular, the driver needs to have enough efficiency to be economical, and for a continuous energy production a high repetition rate and availability is required. It is less than ten years since it was realized that heavy ion beams might be a promising candidate for achieving inertial confinement fusion (ICF). Due to the evolution of high-energy and heavy-ion physics during the past 25 years, accelerators have attained a high technical and technological standard and an excellent operational reliability. Nevertheless, the heavy ion driver for a fusion power plant requires beam specifications exceeding those of existing accelerators considerably. (Auth.)

  11. Lifetime obtained by ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chakaroun, M. [XLIM-MINACOM-UMR 6172, Faculte des Sciences et Techniques, 123 av. Albert Thomas, 87060 Limoges cedex (France); Antony, R. [XLIM-MINACOM-UMR 6172, Faculte des Sciences et Techniques, 123 av. Albert Thomas, 87060 Limoges cedex (France)], E-mail: remi.antony@unilim.fr; Taillepierre, P.; Moliton, A. [XLIM-MINACOM-UMR 6172, Faculte des Sciences et Techniques, 123 av. Albert Thomas, 87060 Limoges cedex (France)

    2007-09-15

    We have fabricated green organic light-emitting diodes based on tris-(8-hydroxyquinoline)aluminium (Alq3) thin films. In order to favor the charge carriers transport from the anode, we have deposited a N,N'-diphenyl-N,N'-bis (3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD) layer (hole transport layer) on a ITO anode. Cathode is obtained with a calcium layer covered with a silver layer. This silver layer is used to protect the other layers against oxygen during the OLED use. All the depositions are performed under vacuum and the devices are not exposed to air during their realisation. In order to improve the silver layer characteristics, we have realized this layer with the ion beam assisted deposition process. The aim of this process is to densify the layer and then reduce the permeation of H{sub 2}O and O{sub 2}. We have used argon ions to assist the silver deposition. All the OLEDs optoelectronic characterizations (I = f(V), L = f(V)) are performed in the ambient air. We compare the results obtained with the assisted layer with those obtained with a classical cathode realized by thermal unassisted evaporation. We have realized lifetime measurements in the ambient air and we discuss about the assisted layer influence on the OLEDs performances.

  12. Basic aspects of ion beam mixing

    International Nuclear Information System (INIS)

    Averback, R.S.

    1985-07-01

    Irradiation of solids with energetic particles results in the reorganization of constituent target atoms, i.e., ion beam mixing (IM). At low temperatures, IM is characterized by prompt (10 -10 s) diffusion processes which are localized in the vicinity of the displacement cascade. Mixing at low temperatures can cause the system to depart far from the equilibrium state. At elevated temperatures, the diffusion of radiation-induced defects extends the mixing to longer times and greater distances. These delayed IM processes tend to return the system toward equilibrium. Recent experimental progress has led to a qualitative understanding of the fundamental aspects of IM in both temperature regimes. This has been achieved through systematic measurements of the influences of temperature, dose, dose-rate, cascade energy density, and chemical interactions on IM. The results of these experiments will be reviewed and compared to IM models based on collisional, thermal spike, and radiation-enhanced diffusion processes. The relation of IM to other fundamental radiation damage effects will also be discussed. 75 refs., 8 figs., 2 tabs

  13. Detection systems for radioactive ion beams

    International Nuclear Information System (INIS)

    Savajols, H.

    2002-01-01

    Two main methods are used to produce radioactive ion beams: -) the ISOL method (isotope separation on-line) in which the stable beam interacts with a thick target, the reaction products diffuse outside the target and are transferred to a source where they are ionized, a mass separator and a post-accelerator drive the selected radioactive ions to the right energy; -) the in-flight fragmentation method in which the stable beam interacts with a thin target, the reaction products are emitted from the target with a restricted angular distribution and a velocity close to that of the incident beam, the experimenter has to take advantage from the reaction kinetics to get the right particle beam. Characteristic time is far longer with the ISOL method but the beam intensity is much better because of the use of a post-accelerator. In both cases, the beam intensity is lower by several orders of magnitude than in the case of a stable beam. This article presents all the constraints imposed by radioactive beams to the detection systems of the reaction products and gives new technical solutions according to the type of nuclear reaction studied. (A.C.)

  14. Can one crystallize a heavy ion beam?

    International Nuclear Information System (INIS)

    Hasse, R.W.

    1990-05-01

    We study the possibility of obtaining liquid or crystalline ordered structures in a cooled heavy ion beam in a storage ring. First the structure of very cold ions confined in a cylindrically symmetric static potential is explored by means of molecular dynamics calculations. Liquid like structures are obtained for the ratio of average Coulomb to thermal energies and Γ ≅ 10 and crystalline structures like strings, zigzags, helices, tetrehedra, intertwined helices, polygons, etc. emerge for Γ > 25. For larger densities, the particles arrange in cylindrical shells and form equilateral triangles on their surfaces arranged in hexagons which are characteristic of two-dimensional Coulomb solids. The molecular dynamics results are compared to results of energy minimization of these structures or of geometrical models. Realistic molecular dynamics calculations in the lattice of the Experimental Storage Ring at GSI Darmstadt including the effects of the bending, focussing and defocussing magnets, of the free sections and of the electron cooler revealed that such structures at higher densities are easily destroyed by heating through shearing forces. Therefore the dynamics of the simple Coulomb string is explored in more detail. The potential energy for large amplitude longitudinal and transverse vibrations is calculated and the dispersion relations and response functions in the harmonic limit are given and possible excitation mechanisms are discussed. (orig.)

  15. Modified betatron for ion beam fusion

    International Nuclear Information System (INIS)

    Rostoker, N.; Fisher, A.

    1986-01-01

    An intense neutralized ion beam can be injected and trapped in magnetic mirror or tokamak geometry. The details of the process involve beam polarization so that the beam crosses the fringing fields without deflection and draining the polarization when the beam reaches the plasma. Equilibrium requires that a large betatron field be added in tokamak geometry. In mirror geometry a toroidal field must be added by means of a current along the mirror axis. In either case, the geometry becomes that of the modified betatron which has been studied experimentally and theoretically in recent years. We consider beams of d and t ions with a mean energy of 500 kev and a temperature of about 50 kev. The plasma may be a proton plasma with cold ions. It is only necessary for beam trapping or to carry currents. The ion energy for slowing down is initially 500 kev and thermonuclear reactions depend only on the beam temperature of 50 kev which changes very slowly. This new configuration for magnetic confinement fusion leads to an energy gain of 10--20 for d-t reactions whereas previous studies of beam target interaction predicted a maximum energy gain of 3--4. The high beam energy available with pulsed ion diode technology is also essential for advanced fuels. 16 refs., 3 figs

  16. BEARS: Radioactive ion beams at LBNL

    International Nuclear Information System (INIS)

    Powell, J.; Guo, F.Q.; Haustein, P.E.

    1998-01-01

    BEARS (Berkeley Experiments with Accelerated Radioactive Species) is an initiative to develop a radioactive ion-beam capability at Lawrence Berkeley National Laboratory. The aim is to produce isotopes at an existing medical cyclotron and to accelerate them at the 88 inch Cyclotron. To overcome the 300-meter physical separation of these two accelerators, a carrier-gas transport system will be used. At the terminus of the capillary, the carrier gas will be separated and the isotopes will be injected into the 88 inch Cyclotron's Electron Cyclotron Resonance (ECR) ion source. The first radioactive beams to be developed will include 20-min 11 C and 70-sec 14 O, produced by (p,n) and (p,α) reactions on low-Z targets. A test program is currently being conducted at the 88 inch Cyclotron to develop the parts of the BEARS system. Preliminary results of these tests lead to projections of initial 11 C beams of up to 2.5 x 10 7 ions/sec and 14 O beams of 3 x 10 5 ions/sec

  17. Edge effect correction using ion beam figuring.

    Science.gov (United States)

    Yang, Bing; Xie, Xuhui; Li, Furen; Zhou, Lin

    2017-11-10

    The edge effect is regarded as one of the most difficult technical issues for fabricating large primary mirrors, as it can greatly reduce the key performance of the optical system. Ion beam figuring (IBF) has the advantage of no edge effect, so we can use it to remove high points on the edge and improve surface accuracy. The edge local correction method (ELCM) of IBF processes only the surface edge zone, and is very different from the current full caliber figuring method (FCFM). Therefore, it is necessary to study the ELCM of IBF. In this paper, the key factors of ELCM are analyzed, such as dwell time algorithm, edge data extension methods, and the outward dimension of the starting figuring point. At the same time, the distinctions between ELCM and FCFM are compared. Finally, a 142 mm diameter fused silica mirror is fabricated to verify the validity of the theoretical of ELCM. The experimental results indicate that the figuring precision and efficiency can be obviously improved by ELCM.

  18. Simulations of multistage intense ion beam acceleration

    International Nuclear Information System (INIS)

    Slutz, S.A.; Poukey, J.W.

    1992-01-01

    An analytic theory for magnetically insulated, multistage acceleration of high intensity ion beams, where the diamagnetic effect due to electron flow is important, has been presented by Slutz and Desjarlais. The theory predicts the existence of two limiting voltages called V 1 (W) and V 2 (W), which are both functions of the injection energy qW of ions entering the accelerating gap. As the voltage approaches V 1 (W), unlimited beam-current density can penetrate the gap without the formation of a virtual anode because the dynamic gap goes to zero. Unlimited beam current density can penetrate an accelerating gap above V 2 (W), although a virtual anode is formed. It was found that the behavior of these limiting voltages is strongly dependent on the electron density profile. The authors have investigated the behavior of these limiting voltages numerically using the 2-D particle-in-cell (PIC) code MAGIC. Results of these simulations are consistent with the superinsulated analytic results. This is not surprising, since the ignored coordinate eliminates instabilities known to be important from studies of single stage magnetically insulated ion diodes. To investigate the effect of these instabilities the authors have simulated the problem with the 3-D PIC code QUICKSILVER, which indicates behavior that is consistent with the saturated model

  19. Development and application of ion beam diagnostics

    International Nuclear Information System (INIS)

    Pfister, Jochen

    2010-01-01

    At GSI - Helmholtz Centre for Heavy Ion Research in Darmstadt/Germany the HITRAP project is in the commissioning phase. This world-wide unique facility consists of a linear decelerator for heavy, highly charged ions including atomic physics precision experiments. During commissioning of the cavities, transverse emittances were measured using the single-shot pepperpot method as well as the multi-gradient method. The extraction emittance of the experimental storage ring (ESR) was determined. Furthermore, the phase space distribution of an decelerated beam at an intermediate energy of 500keV/u was measured behind the IH-structure. New algorithms have been integrated into the analysis of digital images. The longitudinal bunch structure measurements of the ion beam at the entry point into the decelerator and the operation of the Double-drift Buncher is shown. The design, development and the first commissioning of a new single-shot pepperpot emittance meter for very low beam currents and beam energies in the order of some hundred nA is described, making it possible to measure the beam behind the deceleration cavities. In addition, transverse beam dynamics calculations were performed, which supported the hands-on commissioning of the accelerator. It is described how the entire beam line from the ESR to the radio-frequency quadrupole can be optimized using the new routine for transverse effects of the bunching and deceleration, which was successfully integrated into the software COSY Infinity. (orig.)

  20. Energy spread in ion beam analysis

    International Nuclear Information System (INIS)

    Szilagyi, E.

    2000-01-01

    In ion beam analysis (IBA) the depth profiles are extracted from the experimentally determined energy profiles. The spectra, however, are subject to finite energy resolution of both extrinsic and intrinsic origin. Calculation of those effects such as instrumental beam, geometry and detection-related energy and angular spreads as well as energy straggling, multiple scattering and Doppler effects in the sample itself is not trivial, especially since it involves treatment of non-independent random processes. A proper account for energy spread is vital in IBA not only for correct extraction of elemental and isotopic depth profiles from the measured spectra, but already prior to data acquisition, in optimising experimental conditions to reach the required depth resolution at a certain depth. After a short review of the literature on the different energy spread contributions experimental examples are given from resonance, RBS, elastic BS and ERDA practice in which an account for energy spread contributions is essential. Some further examples illustrate extraction of structural information (roughness, pore size, etc.) from elaborated depth resolution calculation for such layer structures

  1. Energy spread in ion beam analysis

    Energy Technology Data Exchange (ETDEWEB)

    Szilagyi, E. E-mail: szilagyi@rmki.kkfki.hu

    2000-03-01

    In ion beam analysis (IBA) the depth profiles are extracted from the experimentally determined energy profiles. The spectra, however, are subject to finite energy resolution of both extrinsic and intrinsic origin. Calculation of those effects such as instrumental beam, geometry and detection-related energy and angular spreads as well as energy straggling, multiple scattering and Doppler effects in the sample itself is not trivial, especially since it involves treatment of non-independent random processes. A proper account for energy spread is vital in IBA not only for correct extraction of elemental and isotopic depth profiles from the measured spectra, but already prior to data acquisition, in optimising experimental conditions to reach the required depth resolution at a certain depth. After a short review of the literature on the different energy spread contributions experimental examples are given from resonance, RBS, elastic BS and ERDA practice in which an account for energy spread contributions is essential. Some further examples illustrate extraction of structural information (roughness, pore size, etc.) from elaborated depth resolution calculation for such layer structures.

  2. Conical pinched electron beam diode for intense ion beam source

    International Nuclear Information System (INIS)

    Matsukawa, Yoshinobu; Nakagawa, Yoshiro

    1982-01-01

    For the purpose of improvement of the pinched electron beam diode, the production of an ion beam by a diode with electrodes in a conical shape was studied at low voltage operation (--200 kV). The ion beam is emitted from a small region of the diode apex. The mean ion beam current density near the axis at 12 cm from the diode apex is two or three times that from an usual flat parallel diode with the same dimension and impedance. The brightness and the power brightness at the otigin are 450 MA/cm 2 sr and 0.12 TW/cm 2 sr respectively. (author)

  3. Biological effect of penetration controlled irradiation with ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Tanaka, Atsushi; Shimizu, Takashi; Kikuchi, Masahiro; Kobayashi, Yasuhiko; Watanabe, Hiroshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Yamashita, Takao

    1997-03-01

    To investigate the effect of local irradiation with ion beams on biological systems, technique for penetration controlled irradiation has been established. The range in a target was controlled by changing the distance from beam window in the atmosphere, and could be controlled linearly up to about 31 {mu}m in biological material. In addition, the effects of the penetration controlled irradiations with 1.5 MeV/u C and He ions were examined using tobacco pollen. The increased frequency of leaky pollen produced by ion beams suggests that the efficient pollen envelope damages would be induced at the range-end of ion beams. (author)

  4. Underling modification in ion beam induced Si wafers

    International Nuclear Information System (INIS)

    Hazra, S.; Chini, T.K.; Sanyal, M.K.; Grenzer, J.; Pietsch, U.

    2005-01-01

    Subsurface (amorphous-crystalline interface) structure of keV ion beam modified Si(001) wafers was studied for the first time using non-destructive technique and compared with that of the top one. Ion-beam modifications of the Si samples were done using state-of-art high-current ion implanter facility at Saha Institute of Nuclear Physics by changing energy, dose and angle of incidence of the Ar + ion beam. To bring out the underlying modification depth-resolved x-ray grazing incidence diffraction has been carried out using synchrotron radiation facility, while the structure of the top surface was studied through atomic force microscopy

  5. Electron temperature effects for an ion beam source

    International Nuclear Information System (INIS)

    Uramoto, Joshin.

    1979-05-01

    A hydrogen high temperature plasma up to 200 eV is produced by acceleration of electrons in a hot hollow cathode discharge and is used as an ion beam source. Then, two characteristics are observed: A rate of the atomic ion (H + ) number increases above 70%. A perveance of the ion beam increases above 30 times compared with that of a cold plasma, while a floating potential of an ion acceleration electrode approaches an ion acceleration potential (- 500 V) according as an increment of the electron temperature. Moreover, a neutralized ion beam can be produced by only the negative floating electrode without an external power supply. (author)

  6. Effect of ion beam irradiation on metal particle doped polymer ...

    Indian Academy of Sciences (India)

    and converts polymeric structure into hydrogen depleted carbon network. ... Composite materials; ion beam irradiation; dielectric properties; X-ray diffraction. ..... Coat. Technol. 201 8225. Raja V, Sharma A K and Narasimha V V R 2004 Mater.

  7. Modeling and computer simulation of ion beam synthesis of nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Strobel, M.

    1999-11-01

    The following topics were dealt with: ion beam synthesis of nanoclusters, kinetic three dimensional lattice Monte Carlo method, Ostwald ripening, redistribution of implanted impurities, buried layer formation, comparisation to experimental results.

  8. Nanoscale insights into ion-beam cancer therapy

    CERN Document Server

    2017-01-01

    This book provides a unique and comprehensive overview of state-of-the-art understanding of the molecular and nano-scale processes that play significant roles in ion-beam cancer therapy. It covers experimental design and methodology, and reviews the theoretical understanding of the processes involved. It offers the reader an opportunity to learn from a coherent approach about the physics, chemistry and biology relevant to ion-beam cancer therapy, a growing field of important medical application worldwide. The book describes phenomena occurring on different time and energy scales relevant to the radiation damage of biological targets and ion-beam cancer therapy from the molecular (nano) scale up to the macroscopic level. It illustrates how ion-beam therapy offers the possibility of excellent dose localization for treatment of malignant tumours, minimizing radiation damage in normal tissue whilst maximizing cell-killing within the tumour, offering a significant development in cancer therapy. The full potential ...

  9. Fusion at counterstreaming ion beams - ion optic fusion (IOF)

    International Nuclear Information System (INIS)

    Gryzinski, M.

    1981-01-01

    The results of investigation are briefly reviewed in the field of ion optic fusion performed at the Institute of Nuclear Research in Swierk. The ion optic fusion concept is based on the possibility of obtaining fusion energy at highly ordered motion of ions in counterstreaming ion beams. For this purpose TW ion beams must be produced and focused. To produce dense and charge-neutralized ion beams the selective conductivity and ballistic focusing ideas were formulated and used in a series of RPI devices with low-pressure cylindrical discharge between grid-type electrodes. 100 kA, 30 keV deuteron beams were successfully produced and focused into the volume of 1 cm 3 , yielding 10 9 neutrons per 200 ns shot on a heavy ice target. Cylindrically convergent ion beams with magnetic anti-defocusing were proposed in order to reach a positive energy gain at reasonable energy level. (J.U.)

  10. Ion-beam modification of properties of metals and alloys

    International Nuclear Information System (INIS)

    Khodasevich, V.V.; Uglov, V.V.; Ponaryadov, V.V.; Zhukova, S.I.

    2002-01-01

    Physical fundaments for ion-beam modification and plasma-vacuum synthesis of new types of coatings and compounds in technically important metals and alloys were development as well as corresponding installation and technologies were created. (authors)

  11. Use of energetic ion beams in materials synthesis and processing

    International Nuclear Information System (INIS)

    Appleton, B.R.

    1992-01-01

    A brief review of the use energetic ion beams and related techniques for the synthesis, processing, and characterization of materials is presented. Selected opportunity areas are emphasized with examples, and references are provided for more extensive coverage. (author)

  12. Status of radioactive ion beams at the HRIBF

    CERN Document Server

    Stracener, D W

    2003-01-01

    Radioactive Ion Beams (RIBs) at the Holifield Radioactive Ion Beam Facility (HRIBF) are produced using the isotope separation on-line technique and are subsequently accelerated up to a few MeV per nucleon for use in nuclear physics experiments. The first RIB experiments at the HRIBF were completed at the end of 1998 using sup 1 sup 7 F beams. Since then other proton-rich ion beams have been developed and a large number of neutron-rich ion beams are now available. The neutron-rich radioactive nuclei are produced via proton-induced fission of uranium in a low-density matrix of uranium carbide. Recently developed RIBs include sup 2 sup 5 Al from a silicon carbide target and isobarically pure beams of neutron-rich Ge, Sn, Br and I isotopes from a uranium carbide target.

  13. Development of the Holifield Radioactive Ion Beam Facility

    International Nuclear Information System (INIS)

    Tatum, B.A.

    1997-01-01

    The Holifield Radioactive Ion Beam Facility (HRIBF) construction project has been completed and the first radioactive ion beam has been successfully accelerated. The project, which began in 1992, has involved numerous facility modifications. The Oak Ridge Isochronous Cyclotron has been converted from an energy booster for heavy ion beams to a light ion accelerator with internal ion source. A target-ion source and mass analysis system have been commissioned as key components of the facility's radioactive ion beam injector to the 25MV tandem electrostatic accelerator. Beam transport lines have been completed, and new diagnostics for very low intensity beams have been developed. Work continues on a unified control system. Development of research quality radioactive beams for the nuclear structure and nuclear astrophysics communities continues. This paper details facility development to date

  14. Realization of a scanning ion beam monitor

    International Nuclear Information System (INIS)

    Pautard, C.

    2008-07-01

    During this thesis, a scanning ion beam monitor has been developed in order to measure on-line fluence spatial distributions. This monitor is composed of an ionization chamber, Hall Effect sensors and a scintillator. The ionization chamber set between the beam exit and the experiment measures the ion rate. The beam spot is localized thanks to the Hall Effect sensors set near the beam sweeping magnets. The scintillator is used with a photomultiplier tube to calibrate the ionization chamber and with an imaging device to calibrate the Hall Effect sensors. This monitor was developed to control the beam lines of a radiobiology dedicated experimentation room at GANIL. These experiments are held in the context of the research in hadron-therapy. As a matter of fact, this new cancer treatment technique is based on ion irradiations and therefore demands accurate knowledge about the relation between the dose deposit in biological samples and the induced effects. To be effective, these studies require an on-line control of the fluence. The monitor has been tested with different beams at GANIL. Fluence can be measured with a relative precision of ±4% for a dose rate ranging between 1 mGy/s and 2 Gy/s. Once permanently set on the beam lines dedicated to radiobiology at GANIL, this monitor will enable users to control the fluence spatial distribution for each irradiation. The scintillator and the imaging device are also used to control the position, the spot shape and the energy of different beams such as those used for hadron-therapy. (author)

  15. Nanodevices produced with focussed ion beams

    International Nuclear Information System (INIS)

    Doetsch, U.; Wieck, A.D.

    1998-01-01

    In directly writing the 30 nm focus of a focussed Ga-ion beam (FIB) with an energy of 100 keV we define insulating lines in two-dimensional electronic layers in semiconductors. Ga ions act in GaAs and silicon as deep impurities or p-type doping, respectively. In this way the insulation by such written lines is due to lateral depletion within npn-like interfaces. In writing two FIB lines with a close spacing we define conducting channels between them. In applying a voltage of several Volts to the adjacent areas of the channel relative to it we can tune the effective width of the channel in the range of a few 100 nm to zero and obtain thus a one-dimensional field-effect-transistor-type structure. This transistor exhibits a pure lateral field effect and is thus topologically very different to current transistor concepts. Due to its particular geometry it is called in-plane-gate (IPG) transistor, since the gate and the channel are in the same plane. The fabrication of this type of transistor is thus completely maskless and does not require any alignment procedures since gate, source and drain are all written in the same writing process. Due to the computer-control of the beam deflection even more complex structures are just a question of software and do not need a set of specific masks or photoresist like in the classical lithography. The required line ion dose is of the order of 10 6 cm -1 which means that there are about 100 ions per μm implanted. For devices with maximum micron dimensions only a few hundred ions need thus to be implanted. (orig.)

  16. Coherent electromagnetic radiation of a combined electron-ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Pankratov, S G; Samoshenkov, Yu K [Vsesoyuznyj Nauchno-Issledovatel' skij Inst. Optiko-Fizicheskikh Izmerenij, Moscow (USSR)

    1977-07-01

    The intensity of coherent electromagnetic radiation due to interaction of a modulated electron beam with a modulated ion beam is calculated. It is shown that the radiation intensity has a sharp maximum at the frequency equal to the difference of the modulation frequency of the electron and ion beams. The results obtained are compared with those corresponding to the scattering of a modulated electron beam on randomly distributed gas ions.

  17. Progress toward a microsecond duration, repetitively pulsed, intense- ion beam

    International Nuclear Information System (INIS)

    Davis, H.A.; Olson, J.C.; Reass, W.A.; Coates, D.M.; Hunt, J.W.; Schleinitz, H.M.; Greenly, J.B.

    1996-01-01

    A number of intense ion beams applications are emerging requiring repetitive high-average-power beams. These applications include ablative deposition of thin films, rapid melt and resolidification for surface property enhancement, advanced diagnostic neutral beams for the next generation of Tokamaks, and intense pulsed-neutron sources. We are developing a 200-250 keV, 15 kA, 1 μs duration, 1-30 Hz intense ion beam accelerator to address these applications

  18. Ion-Beam-Excited Electrostatic Ion Cyclotron Waves

    DEFF Research Database (Denmark)

    Michelsen, Poul; Pécseli, Hans; Juul Rasmussen, Jens

    1976-01-01

    Self-excited electrostatic ion cyclotron waves were observed in an ion-beam-plasma system produced in a DP-operated Q-machine. The frequency of the waves showed the theoretically predicted variation with the magnetic field.......Self-excited electrostatic ion cyclotron waves were observed in an ion-beam-plasma system produced in a DP-operated Q-machine. The frequency of the waves showed the theoretically predicted variation with the magnetic field....

  19. Focused ion beam (FIB) milling of electrically insulating specimens using simultaneous primary electron and ion beam irradiation

    International Nuclear Information System (INIS)

    Stokes, D J; Vystavel, T; Morrissey, F

    2007-01-01

    There is currently great interest in combining focused ion beam (FIB) and scanning electron microscopy technologies for advanced studies of polymeric materials and biological microstructures, as well as for sophisticated nanoscale fabrication and prototyping. Irradiation of electrically insulating materials with a positive ion beam in high vacuum can lead to the accumulation of charge, causing deflection of the ion beam. The resultant image drift has significant consequences upon the accuracy and quality of FIB milling, imaging and chemical vapour deposition. A method is described for suppressing ion beam drift using a defocused, low-energy primary electron beam, leading to the derivation of a mathematical expression to correlate the ion and electron beam energies and currents with other parameters required for electrically stabilizing these challenging materials

  20. Morphological change of self-organized protrusions of fluoropolymer surface by ion beam irradiation

    International Nuclear Information System (INIS)

    Kitamura, Akane; Kobayashi, Tomohiro; Satoh, Takahiro; Koka, Masashi; Kamiya, Tomihiro; Suzuki, Akihiro; Terai, Takayuki

    2013-01-01

    Polytetrafluoroethylene (PTFE) and fluorinated ethylene propylene (FEP) are typical fluoropolymers displaying several desirable technological properties such as electrical insulation and high chemical resistance. When their surfaces are irradiated with ion beams, dense micro-protrusions formed after the emergence and spread of micropores across the entire irradiated area, allowing culture cells to spread on the top of the protrusions. In this study, we investigate the morphological changes introduced in the fluoropolymer surfaces by ion beams as the energy of the beams is increased. When an FEP sample was irradiated with a nitrogen ion beam with an energy of less than 350 keV at 1.0 μA/cm 2 , protrusions were formed with a density between 2 × 10 7 /cm 2 and 2 × 10 8 /cm 2 . However, at energies higher than 350 keV, the protrusions became sparse, and the density dropped to 5 × 10 2 /cm 2 . Protrusions appeared sporadically during irradiation at high energies, and the top of the protrusions appeared as spots inside the sample, which were difficult to etch and became elongated as the erosion of the surface progressed. Erosion was caused by sputtering of FEP molecules and evaporation at notably elevated temperatures on the surface. Analysis based on attenuated total reflectance/Fourier transform infrared spectroscopy showed the presence of C=C bonds as well as –COOH, –C=O, and –OH bonds on all irradiated samples. Their concentration on the surface densely covered with micro-protrusions was higher than that on the surface with sparse protrusions after irradiation at energies exceeding 350 keV. Thus, we determined a suitable range for the ion energy for creating FEP surfaces densely covered with protrusions

  1. Elemental thin film depth profiles by ion beam analysis using simulated annealing - a new tool

    International Nuclear Information System (INIS)

    Jeynes, C; Barradas, N P; Marriott, P K; Boudreault, G; Jenkin, M; Wendler, E; Webb, R P

    2003-01-01

    Rutherford backscattering spectrometry (RBS) and related techniques have long been used to determine the elemental depth profiles in films a few nanometres to a few microns thick. However, although obtaining spectra is very easy, solving the inverse problem of extracting the depth profiles from the spectra is not possible analytically except for special cases. It is because these special cases include important classes of samples, and because skilled analysts are adept at extracting useful qualitative information from the data, that ion beam analysis is still an important technique. We have recently solved this inverse problem using the simulated annealing algorithm. We have implemented the solution in the 'IBA DataFurnace' code, which has been developed into a very versatile and general new software tool that analysts can now use to rapidly extract quantitative accurate depth profiles from real samples on an industrial scale. We review the features, applicability and validation of this new code together with other approaches to handling IBA (ion beam analysis) data, with particular attention being given to determining both the absolute accuracy of the depth profiles and statistically accurate error estimates. We include examples of analyses using RBS, non-Rutherford elastic scattering, elastic recoil detection and non-resonant nuclear reactions. High depth resolution and the use of multiple techniques simultaneously are both discussed. There is usually systematic ambiguity in IBA data and Butler's example of ambiguity (1990 Nucl. Instrum. Methods B 45 160-5) is reanalysed. Analyses are shown: of evaporated, sputtered, oxidized, ion implanted, ion beam mixed and annealed materials; of semiconductors, optical and magnetic multilayers, superconductors, tribological films and metals; and of oxides on Si, mixed metal silicides, boron nitride, GaN, SiC, mixed metal oxides, YBCO and polymers. (topical review)

  2. Characteristics of thin film fullerene coatings formed under different deposition conditions by power ion beams

    International Nuclear Information System (INIS)

    Petrov, A.V.; Ryabchikov, A.I.; Struts, V.K.; Usov, Yu.P.; Renk, T.J.

    2007-01-01

    Carbon allotropic form - C 60 and C 70 can be used in microelectronics, superconductors, solar batteries, logic and memory devices to increase processing tool wear resistance, as magnetic nanocomposite materials for record and storage information, in biology, medicine and pharmacology. In many cases it is necessary to have a thin-film containing C 60 and C 70 fullerene carbon coatings. A possibility in principle of thin carbon films formation with nanocrystalline structure and high content ∼30-95% of C 60 and C 70 fullerene mixture using the method of graphite targets sputtering by a power ion beam has been shown. Formation of thin-film containing C 60 and C 70 fullerene carbon coatings were carried out by means of deposition of ablation plasma on silicon substrates. Ablation plasma was generated as result of interaction of high-power pulsed ion beams (HPPIB) with graphite targets of different densities. It has been demonstrated that formation of fullerenes, their amount and characteristics of thin-film coatings depend on the deposition conditions. The key parameter for such process is the deposition rate, which determines thin film formation conditions and, subsequently, its structure and mechanical properties. Nano-hardness, Young module, adhesion to mono-crystalline silicon substrate, friction coefficient, roughness surface of synthesized coatings at the different deposition conditions were measured. These characteristics are under influence of such main process parameters as energy density of HPPIB, which, in turn, determinates the density and temperature of ablation plasma and deposition speed, which is thickness of film deposited for one pulse of ion current. Nano-hardness and Young module meanings are higher at the increasing of power density of ion beam. Adhesion value is less at the high deposition speed. As rule, friction coefficient depends on vice versa from roughness. (authors)

  3. Investigation of the effect of the incorporated Fe atoms in the ion-beam induced nanopatterns on Si(001)

    Energy Technology Data Exchange (ETDEWEB)

    Khanbabaee, Behnam; Biermanns, Andreas; Pietsch, Ullrich [Siegen Univ. (Germany). Festkoerperphysik; Cornejo, Marina; Frost, Frank [Leibniz-Institute fuer Oberflaechenmodifizierung e.V. (IOM), Leipzig (Germany)

    2012-07-01

    Ion beam erosion of semiconductor surfaces can modify the surface and depends on main sputtering parameters; different surface topographies such as ripple or dot like pattern are fabricated on the surface. Recent experiments have shown that the incorporation of foreign metallic atoms during the sputtering process plays a crucial role in pattern formation on surfaces. In the result of investigation we report on the depth profile of Fe atoms incorporated in sputtering process on Si(100) with low energy Kr ion beam. X-ray reflectivity (XRR) measurements determine the concentration profile of Fe atoms. X-ray absorption near edge spectroscopy (XANES) at the Fe K-edge (7112 eV) shows the formation of Fe rich silicide near surface region. X-ray photoelectron spectroscopy (XPS) shows a shift in the binding energy of Si2p levels at the surface compared top bulk confirming the formation of different phases of Fe-silicide on tope and below the surface. The depth profiles obtained by XRR are compared to results obtained by complementary secondary-ion mass spectrometry (SIMS).

  4. From field evaporation to focused ion beams

    International Nuclear Information System (INIS)

    Forbes, R.G.

    2004-01-01

    Full text: This paper report various items of recent progress in the theory of field evaporation and the theory of the liquid-metal ion source. The research has, in part, been driven by a desire to find out how to reduce the beam-spot size in a focused ion beam machine, which is developing as a significant tool of nanotechnology. A major factor in determining beam spot size seems to be the behavior of the liquid-metal ion source (LMIS), and one route might be to reduce the minimum emission current of a LMIS, if this is possible. Theories of LMIS minimum emission current have been re-examined. Some progress has been made, but development of more accurate theory has been constrained by several factors, include the long-known limitations of the present theory of field evaporation (FEV). This, in turn, has stimulated a wider re-examination of FEV theory. As part of some general theoretical remarks, the following items of recent progress will be covered. Various results concerning the prediction of the field F e at which the activation energy Q for field evaporation is zero, including calculations in which vacuum electrostatic energy changes are taken into account, and another look at the views of Kingham and Tsong concerning escape charge-state. Some years ago, the following approximate formula was derived for the dependence of FEV activation energy on field F: Q=B(F e /F - 1) 2 . It has recently been possible to show that the parameter B can be estimated as B= βYΩ/8, where Y is Young's modulus, Ω is the atomic volume, and β is a correction factor of order. In the framework of the charge-draining mechanism, another look at how the activation-energy hump can be modelled, in order to predict/explain the conditions under which FEV becomes dominated by ion tunnelling rather than field evaporation. A review of the changes in LMIS theory that result from applying the equation of continuity to the metal/vacuum interface, including modifications to the theory of minimum

  5. An ion beam analysis software based on ImageJ

    International Nuclear Information System (INIS)

    Udalagama, C.; Chen, X.; Bettiol, A.A.; Watt, F.

    2013-01-01

    The suit of techniques (RBS, STIM, ERDS, PIXE, IL, IF,…) available in ion beam analysis yields a variety of rich information. Typically, after the initial challenge of acquiring data we are then faced with the task of having to extract relevant information or to present the data in a format with the greatest impact. This process sometimes requires developing new software tools. When faced with such situations the usual practice at the Centre for Ion Beam Applications (CIBA) in Singapore has been to use our computational expertise to develop ad hoc software tools as and when we need them. It then became apparent that the whole ion beam community can benefit from such tools; specifically from a common software toolset that can be developed and maintained by everyone with freedom to use and allowance to modify. In addition to the benefits of readymade tools and sharing the onus of development, this also opens up the possibility for collaborators to access and analyse ion beam data without having to depend on an ion beam lab. This has the virtue of making the ion beam techniques more accessible to a broader scientific community. We have identified ImageJ as an appropriate software base to develop such a common toolset. In addition to being in the public domain and been setup for collaborative tool development, ImageJ is accompanied by hundreds of modules (plugins) that allow great breadth in analysis. The present work is the first step towards integrating ion beam analysis into ImageJ. Some of the features of the current version of the ImageJ ‘ion beam’ plugin are: (1) reading list mode or event-by-event files, (2) energy gates/sorts, (3) sort stacks, (4) colour function, (5) real time map updating, (6) real time colour updating and (7) median and average map creation

  6. An ion beam analysis software based on ImageJ

    Energy Technology Data Exchange (ETDEWEB)

    Udalagama, C., E-mail: chammika@nus.edu.sg [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117 542 (Singapore); Chen, X.; Bettiol, A.A.; Watt, F. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117 542 (Singapore)

    2013-07-01

    The suit of techniques (RBS, STIM, ERDS, PIXE, IL, IF,…) available in ion beam analysis yields a variety of rich information. Typically, after the initial challenge of acquiring data we are then faced with the task of having to extract relevant information or to present the data in a format with the greatest impact. This process sometimes requires developing new software tools. When faced with such situations the usual practice at the Centre for Ion Beam Applications (CIBA) in Singapore has been to use our computational expertise to develop ad hoc software tools as and when we need them. It then became apparent that the whole ion beam community can benefit from such tools; specifically from a common software toolset that can be developed and maintained by everyone with freedom to use and allowance to modify. In addition to the benefits of readymade tools and sharing the onus of development, this also opens up the possibility for collaborators to access and analyse ion beam data without having to depend on an ion beam lab. This has the virtue of making the ion beam techniques more accessible to a broader scientific community. We have identified ImageJ as an appropriate software base to develop such a common toolset. In addition to being in the public domain and been setup for collaborative tool development, ImageJ is accompanied by hundreds of modules (plugins) that allow great breadth in analysis. The present work is the first step towards integrating ion beam analysis into ImageJ. Some of the features of the current version of the ImageJ ‘ion beam’ plugin are: (1) reading list mode or event-by-event files, (2) energy gates/sorts, (3) sort stacks, (4) colour function, (5) real time map updating, (6) real time colour updating and (7) median and average map creation.

  7. Means for obtaining a metal ion beam from a heavy-ion cyclotron source

    Science.gov (United States)

    Hudson, E.D.; Mallory, M.L.

    1975-08-01

    A description is given of a modification to a cyclotron ion source used in producing a high intensity metal ion beam. A small amount of an inert support gas maintains the usual plasma arc, except that it is necessary for the support gas to have a heavy mass, e.g., xenon or krypton as opposed to neon. A plate, fabricated from the metal (or anything that can be sputtered) to be ionized, is mounted on the back wall of the ion source arc chamber and is bombarded by returning energetic low-charged gas ions that fail to cross the initial accelerating gap between the ion source and the accelerating electrode. Some of the atoms that are dislodged from the plate by the returning gas ions become ionized and are extracted as a useful beam of heavy ions. (auth)

  8. Crystal structure of TiNi nanoparticles obtained by Ar ion beam deposition

    International Nuclear Information System (INIS)

    Castro, A. Torres; Cuellar, E. Lopez; Mendez, U. Ortiz; Yacaman, M. Jose

    2008-01-01

    Nanoparticles are a state of matter that have properties different from either molecules or bulk solids, turning them into a very interesting class of materials to study. In the present work, the crystal structure of TiNi nanoparticles obtained by ion beam deposition is characterized. TiNi nanoparticles were obtained from TiNi wire samples by sputtering with Ar ions using a Gatan precision ion polishing system. The TiNi nanoparticles were deposited on a Lacey carbon film that was used for characterization by transmission electron microscopy. The nanoparticles were characterized by high-resolution transmission electron microscopy, high-angle annular dark-field imaging, electron diffraction, scanning transmission electron microscopy and energy-dispersive X-ray spectroscopy. Results of nanodiffraction seem to indicate that the nanoparticles keep the same B2 crystal structure as the bulk material but with a decreased lattice parameter

  9. Ion beam production with sub-milligram samples of material from an ECR source for AMS

    Energy Technology Data Exchange (ETDEWEB)

    Scott, R., E-mail: scott@phy.anl.gov; Palchan-Hazan, T.; Pardo, R.; Vondrasek, R. [Argonne Tandem Linac Accelerator System (ATLAS), Argonne National Laboratory, Lemont, Illinois 60439 (United States); Bauder, W. [Argonne Tandem Linac Accelerator System (ATLAS), Argonne National Laboratory, Lemont, Illinois 60439 (United States); Nuclear Structure Laboratory, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

    2016-02-15

    Current accelerator mass spectrometry experiments at the Argonne Tandem Linac Accelerator System facility at Argonne National Laboratory push us to improve the ion source performance with a large number of samples and a need to minimize cross contamination. These experiments can require the creation of ion beams from as little as a few micrograms of material. These low concentration samples push the limit of our current efficiency and stability capabilities of the electron cyclotron resonance ion source. A combination of laser ablation and sputtering techniques coupled with a newly modified multi-sample changer has been used to meet this demand. We will discuss performance, stability, and consumption rates as well as planned improvements.

  10. Spacecraft-plasma-debris interaction in an ion beam shepherd mission

    Science.gov (United States)

    Cichocki, Filippo; Merino, Mario; Ahedo, Eduardo

    2018-05-01

    This paper presents a study of the interaction between a spacecraft, a plasma thruster plume and a free floating object, in the context of an active space debris removal mission based on the ion beam shepherd concept. The analysis is performed with the EP2PLUS hybrid code and includes the evaluation of the transferred force and torque to the target debris, its surface sputtering due to the impinging hypersonic ions, and the equivalent electric circuit of the spacecraft-plasma-debris interaction. The electric potential difference that builds up between the spacecraft and the debris, the ion backscattering and the backsputtering contamination of the shepherd satellite are evaluated for a nominal scenario. A sensitivity analysis is carried out to evaluate quantitatively the effects of electron thermodynamics, ambient plasma, heavy species collisions, and debris position.

  11. Dynamics of Plasma-Surface Interactions using In-situ Ion Beam Analysis

    International Nuclear Information System (INIS)

    Whyte, D.G.

    2009-01-01

    The overall goal of this proposal was to develop an innovative experimental facility that would allow for the measurement of real-time response of a material surface to plasma bombardment by employing in-situ high-energy ion beam analysis. This facility was successfully developed and deployed at U. Wisconsin-Madison and was named DIONISOS (Dynamics of IONic Implantation and Sputtering on Surfaces). There were several major highlights to the DIONISOS research which we will briefly highlight below. The full technical details of the DIONISOS development, deployment and research results are contained in the Appendices which contain several peer-reviewed publications and a PhD thesis devoted to DIONISOS. The DIONISOS results on deuterium retention in molybdenum were chosen as an invited talk at the 2008 International Conference on Plasma-Surface Interactions in Toledo, Spain.

  12. Electron and ion beam degradation effects in AES analysis of silicon nitride thin films

    International Nuclear Information System (INIS)

    Fransen, F.; Vanden Berghe, R.; Vlaeminck, R.; Hinoul, M.; Remmerie, J.; Maes, H.E.

    1985-01-01

    Silicon nitride films are currently investigated by AES combined with ion profiling techniques for their stoichiometry and oxygen content. During this analysis, ion beam and primary electron effects were observed. The effect of argon ion bombardment is the preferential sputtering of nitrogen, forming 'covalent' silicon at the surface layer (AES peak at 91 eV). The electron beam irradiation results in a decrease of the covalent silicon peak, either by an electron beam annealing effect in the bulk of the silicon nitride film, or by an ionization enhanced surface diffusion process of the silicon (electromigration). By the electron beam annealing, nitrogen species are liberated in the bulk of the silicon nitride film and migrate towards the surface where they react with the covalent silicon. The ionization enhanced diffusion originates from local charging of the surface, induced by the electron beam. (author)

  13. Smoothing of ZnO films by gas cluster ion beam

    International Nuclear Information System (INIS)

    Chen, H.; Liu, S.W.; Wang, X.M.; Iliev, M.N.; Chen, C.L.; Yu, X.K.; Liu, J.R.; Ma, K.; Chu, W.K.

    2005-01-01

    Planarization of wide-band-gap semiconductor ZnO surface is crucial for thin-film device performance. In this study, the rough initial surfaces of ZnO films deposited by r.f. magnetron sputtering on Si substrates were smoothed by gas cluster ion beams. AFM measurements show that the average surface roughness (R a ) of the ZnO films could be reduced considerably from 16.1 nm to 0.9 nm. Raman spectroscopy was used to monitor the structure of both the as-grown and the smoothed ZnO films. Rutherford back-scattering in combination with channeling effect was used to study the damage production induced by the cluster bombardment

  14. Study of Si wafer surfaces irradiated by gas cluster ion beams

    International Nuclear Information System (INIS)

    Isogai, H.; Toyoda, E.; Senda, T.; Izunome, K.; Kashima, K.; Toyoda, N.; Yamada, I.

    2007-01-01

    The surface structures of Si (1 0 0) wafers subjected to gas cluster ion beam (GCIB) irradiation have been analyzed by cross-sectional transmission electron microscopy (XTEM) and atomic force microscopy (AFM). GCIB irradiation is a promising technique for both precise surface etching and planarization of Si wafers. However, it is very important to understand the crystalline structure of Si wafers after GCIB irradiation. An Ar-GCIB used for the physically sputtering of Si atoms and a SF 6 -GCIB used for the chemical etching of the Si surface are also analyzed. The GCIB irradiation increases the surface roughness of the wafers, and amorphous Si layers are formed on the wafer surface. However, when the Si wafers are annealed in hydrogen at a high temperature after the GCIB irradiation, the surface roughness decreases to the same level as that before the irradiation. Moreover, the amorphous Si layers disappear completely

  15. Off-line production of a sup 7 Be radioactive ion beam

    CERN Document Server

    Gialanella, L; De Cesare, N; D'Onofrio, A; Romano, M; Campajola, L; Formicola, A; Fülöp, Z; Gyürky, G; Imbriani, G; Lubritto, C; Ordine, A; Roca, V; Rogalla, D; Rolfs, C; Russo, M; Sabbarese, C; Somorjai, E; Strieder, F; Terrasi, F; Trautvetter, H P

    2002-01-01

    A sup 7 Be ion beam of several particle pA at 8 MeV has been produced at the TTT3 tandem of the University 'Federico II' in Naples. The sup 7 Be nuclides were formed via the sup 7 Li(p,n) sup 7 Be reaction using a metallic Li target and an 11.4 MeV proton beam of 20 mu A intensity, delivered by the cyclotron in Debrecen. Methods of hot chemistry were used to extract the sup 7 Be nuclides from the Li matrix and to prepare the sup 7 Be cathodes for the ion sputter source of the tandem. Examples of sup 7 Be beam applications are given.

  16. Direct fabrication of nano-gap electrodes by focused ion beam etching

    International Nuclear Information System (INIS)

    Nagase, Takashi; Gamo, Kenji; Kubota, Tohru; Mashiko, Shinro

    2006-01-01

    A simple approach to increase the reliability of nano-gap electrode fabrication techniques is presented. The method is based on maskless sputter etching of Au electrodes using a focused ion beam (FIB) and in-situ monitoring of the etching steps by measuring a current fed to the Au electrodes. The in-situ monitoring is crucial to form nano-gaps much narrower than a FIB spot size. By using this approach, gaps of ∼3-6 nm are fabricated with the high yield of ∼90%, and most of the fabricated nano-gap electrodes showed high resistances of 10 GΩ-1 TΩ. The controllability of the fabrication steps is significantly improved by using triple-layered films consisting of top Ti, Au, and bottom adhesion Ti layers. The applicability of the fabricated nano-gap electrodes to electron transport studies of nano-sized objects is demonstrated by electrical measurement of Au colloidal nano-particles

  17. Electron beam based transversal profile measurements of intense ion beams

    International Nuclear Information System (INIS)

    El Moussati, Said

    2014-01-01

    A non-invasive diagnostic method for the experimental determination of the transverse profile of an intense ion beam has been developed and investigated theoretically as well as experimentally within the framework of the present work. The method is based on the deflection of electrons when passing the electromagnetic field of an ion beam. To achieve this an electron beam is employed with a specifically prepared transversal profile. This distinguish this method from similar ones which use thin electron beams for scanning the electromagnetic field [Roy et al. 2005; Blockland10]. The diagnostic method presented in this work will be subsequently called ''Electron-Beam-Imaging'' (EBI). First of all the influence of the electromagnetic field of the ion beam on the electrons has been theoretically analyzed. It was found that the magnetic field causes only a shift of the electrons along the ion beam axis, while the electric field only causes a shift in a plane transverse to the ion beam. Moreover, in the non-relativistic case the magnetic force is significantly smaller than the Coulomb one and the electrons suffer due to the magnetic field just a shift and continue to move parallel to their initial trajectory. Under the influence of the electric field, the electrons move away from the ion beam axis, their resulting trajectory shows a specific angle compared to the original direction. This deflection angle practically depends just on the electric field of the ion beam. Thus the magnetic field has been neglected when analysing the experimental data. The theoretical model provides a relationship between the deflection angle of the electrons and the charge distribution in the cross section of the ion beam. The model however only can be applied for small deflection angles. This implies a relationship between the line-charge density of the ion beam and the initial kinetic energy of the electrons. Numerical investigations have been carried out to clarify the

  18. Dwell time dependent morphological transition and sputtering yield of ion sputtered Sn

    International Nuclear Information System (INIS)

    Qian, H X; Zeng, X R; Zhou, W

    2010-01-01

    Self-organized nano-scale patterns may appear on a wide variety of materials irradiated with an ion beam. Good manipulation of these structures is important for application in nanostructure fabrication. In this paper, dwell time has been demonstrated to be able to control the ripple formation and sputtering yield on Sn surface. Ripples with a wavelength of 1.7 μm were observed for a dwell time in the range 3-20 μs, whereas much finer ripples with a wavelength of 540 nm and a different orientation were observed for a shorter dwell time in the range 0.1-2 μs. The sputtering yield increases with dwell time significantly. The results provide a new basis for further steps in the theoretical description of morphology evolution during ion beam sputtering.

  19. Mechanisms of material removal and mass transport in focused ion beam nanopore formation

    Energy Technology Data Exchange (ETDEWEB)

    Das, Kallol, E-mail: das7@illinois.edu; Johnson, Harley T., E-mail: htj@illinois.edu [Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, 1206 West Green Street, MC-244, Urbana, Illinois 61801 (United States); Freund, Jonathan B., E-mail: jbfreund@illinois.edu [Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, 1206 West Green Street, MC-244, Urbana, Illinois 61801 (United States); Department of Aerospace Engineering, University of Illinois at Urbana-Champaign, 306 Talbot Laboratory, MC-236, 104 South Wright Street Urbana, Illinois 61801 (United States)

    2015-02-28

    Despite the widespread use of focused ion beam (FIB) processing as a material removal method for applications ranging from electron microscope sample preparation to nanopore processing for DNA sequencing, the basic material removal mechanisms of FIB processing are not well understood. We present the first complete atomistic simulation of high-flux FIB using large-scale parallel molecular dynamics (MD) simulations of nanopore fabrication in freestanding thin films. We focus on the root mechanisms of material removal and rearrangement and describe the role of explosive boiling in forming nanopores. FIB nanopore fabrication is typically understood to occur via sputter erosion. This can be shown to be the case in low flux systems, where individual ion impacts are sufficiently separated in time that they may be considered as independent events. But our detailed MD simulations show that in high flux FIB processing, above a threshold level at which thermal effects become significant, the primary mechanism of material removal changes to a significantly accelerated, thermally dominated process. Under these conditions, the target is heated by the ion beam faster than heat is conducted away by the material, leading quickly to melting, and then continued heating to nearly the material critical temperature. This leads to explosive boiling of the target material with spontaneous bubble formation and coalescence. Mass is rapidly rearranged at the atomistic scale, and material removal occurs orders of magnitude faster than would occur by simple sputtering. While the phenomenology is demonstrated computationally in silicon, it can be expected to occur at lower beam fluxes in other cases where thermal conduction is suppressed due to material properties, geometry, or ambient thermal conditions.

  20. Advanced characterization of materials using swift ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Tabacniks, Manfredo H. [Universidade de Sao Paulo (USP), SP (Brazil)

    2011-07-01

    Swift ion beams are powerful non destructive tools for material analysis especially thin films. In spite of their high energy, usually several MeV/u, little energy is deposited by the ion on the sample. Energetic ions also use to stop far away (or outside) the inspected volume, hence producing negligible damage to the sample. Ion beam methods provide quantitative trace element analysis of any atomic element (and some isotopes) in a sample and are able to yield elemental depth profiles with spatial resolution of the order of 10mm. Relying on nuclear properties of the atoms, these methods are insensitive to the chemical environment of the element, consequently not limited by matrix effects. Ion beam methods are multielemental, can handle insulating materials, are quick (an analysis usually takes less than 15 minutes), and need little (if any) sample preparation. Ion beams are also sensitive to surface roughness and sample porosity and can be used to quickly inspect these properties in a sample. The Laboratory for Ion Beam Analysis of the University of Sao Paulo, LAMFI, is a multi-user facility dedicated to provide Ion Beam Methods like PIXE, RBS, FRS and NRA techniques for the analysis of materials and thin films. Operating since 1994, LAMFI is being used mostly by many researchers from within and outside USP, most of them non specialists in ion beam methods, but in need of ion beam analysis to carry out their research. At LAMFI, during the last 9 years, more than 50% of the accelerator time was dedicated to analysis, usually PIXE or RBS. 21% was down time and about 14% of the time was used for the development of ion beam methods which includes the use of RBS for roughness characterization exploring the shading of the beam by structures on the surface and by modeling the RBS spectrum as the product of a normalized RBS spectrum and a height density distribution function of the surface. Single element thick target PIXE analysis is being developed to obtain the thin

  1. Advanced characterization of materials using swift ion beams

    International Nuclear Information System (INIS)

    Tabacniks, Manfredo H.

    2011-01-01

    Swift ion beams are powerful non destructive tools for material analysis especially thin films. In spite of their high energy, usually several MeV/u, little energy is deposited by the ion on the sample. Energetic ions also use to stop far away (or outside) the inspected volume, hence producing negligible damage to the sample. Ion beam methods provide quantitative trace element analysis of any atomic element (and some isotopes) in a sample and are able to yield elemental depth profiles with spatial resolution of the order of 10mm. Relying on nuclear properties of the atoms, these methods are insensitive to the chemical environment of the element, consequently not limited by matrix effects. Ion beam methods are multielemental, can handle insulating materials, are quick (an analysis usually takes less than 15 minutes), and need little (if any) sample preparation. Ion beams are also sensitive to surface roughness and sample porosity and can be used to quickly inspect these properties in a sample. The Laboratory for Ion Beam Analysis of the University of Sao Paulo, LAMFI, is a multi-user facility dedicated to provide Ion Beam Methods like PIXE, RBS, FRS and NRA techniques for the analysis of materials and thin films. Operating since 1994, LAMFI is being used mostly by many researchers from within and outside USP, most of them non specialists in ion beam methods, but in need of ion beam analysis to carry out their research. At LAMFI, during the last 9 years, more than 50% of the accelerator time was dedicated to analysis, usually PIXE or RBS. 21% was down time and about 14% of the time was used for the development of ion beam methods which includes the use of RBS for roughness characterization exploring the shading of the beam by structures on the surface and by modeling the RBS spectrum as the product of a normalized RBS spectrum and a height density distribution function of the surface. Single element thick target PIXE analysis is being developed to obtain the thin

  2. Ion beam microanalysis of human hair follicles

    International Nuclear Information System (INIS)

    Kertesz, Zs.; Szikszai, Z.; Telek, A.; Biro, T.; Debrecen Univ.

    2006-01-01

    Complete text of publication follows. Hair follicle (HF) is an appendage organ of the skin which is of importance to the survival of mammals and still maintains significance for the human race - not just biologically, but also through cosmetic and commercial considerations. However data on the composition of hair follicles are scarce and mostly limited to the hair shaft. In addition, to the best of our knowledge, no data are available concerning the distribution of elements in human hair follicle with various growth and cycling phases. In this study [1] we provided detailed quantitative elemental distribution of organ-cultured hair follicle in anagen and catagen growth phases using ion microscopy in order to reach a better understanding of the function, development, and cyclic activity of the hair follicle. The microprobe analysis was carried out at the scanning ion microprobe facilities at the ATOMKI Debrecen, and at the Jozef Stefan Institute, Ljubljana, Slovenia, using combined STIM and PIXE ion beam analytical techniques. Human anagen hair follicles were isolated from skin obtained from females undergoing face-lift surgery. Cultured anagen HFs were treated by either vehicle or by 10 μM capsaicin for 5 days. Elemental distributions and absolute concentrations were determined along 5 capsaicin treated (catagen), and 4 control (anagen) hair follicles. The investigated length varied between 1.5 and 2 mm. Average elemental concentration values of the whole sample and the different morphological parts were also determined. Concentrations for most of the elements were found to be the same in the corresponding parts of the anagen and the catagen hair follicles. However, significant differences were observed in the Ca concentration between the anagen and catagen HFs. With respect to the distribution of Ca, in anagen (control) HFs, the following concentrations were measured (given in μg/g dry weight): dermal papilla, ∼500; matrix of the bulb, 1000-1500; outer/ inner

  3. Development of Emittance Analysis Software for Ion Beam Characterization

    International Nuclear Information System (INIS)

    Padilla, M.J.; Liu, Yuan

    2007-01-01

    Transverse beam emittance is a crucial property of charged particle beams that describes their angular and spatial spread. It is a figure of merit frequently used to determine the quality of ion beams, the compatibility of an ion beam with a given beam transport system, and the ability to suppress neighboring isotopes at on-line mass separator facilities. Generally, a high-quality beam is characterized by a small emittance. In order to determine and improve the quality of ion beams used at the Holifield Radioactive Ion Beam Facility (HRIBF) for nuclear physics and nuclear astrophysics research, the emittances of the ion beams are measured at the off-line Ion Source Test Facilities. In this project, emittance analysis software was developed to perform various data processing tasks for noise reduction, to evaluate root-mean-square emittance, Twiss parameters, and area emittance of different beam fractions. The software also provides 2D and 3D graphical views of the emittance data, beam profiles, emittance contours, and RMS. Noise exclusion is essential for accurate determination of beam emittance values. A Self-Consistent, Unbiased Elliptical Exclusion (SCUBEEx) method is employed. Numerical data analysis techniques such as interpolation and nonlinear fitting are also incorporated into the software. The software will provide a simplified, fast tool for comprehensive emittance analysis. The main functions of the software package have been completed. In preliminary tests with experimental emittance data, the analysis results using the software were shown to be accurate

  4. DEVELOPMENT OF EMITTANCE ANALYSIS SOFTWARE FOR ION BEAM CHARACTERIZATION

    Energy Technology Data Exchange (ETDEWEB)

    Padilla, M. J.; Liu, Y.

    2007-01-01

    Transverse beam emittance is a crucial property of charged particle beams that describes their angular and spatial spread. It is a fi gure of merit frequently used to determine the quality of ion beams, the compatibility of an ion beam with a given beam transport system, and the ability to suppress neighboring isotopes at on-line mass separator facilities. Generally a high quality beam is characterized by a small emittance. In order to determine and improve the quality of ion beams used at the Holifi eld Radioactive Ion beam Facility (HRIBF) for nuclear physics and nuclear astrophysics research, the emittances of the ion beams are measured at the off-line Ion Source Test Facilities. In this project, emittance analysis software was developed to perform various data processing tasks for noise reduction, to evaluate root-mean-square emittance, Twiss parameters, and area emittance of different beam fractions. The software also provides 2D and 3D graphical views of the emittance data, beam profi les, emittance contours, and RMS. Noise exclusion is essential for accurate determination of beam emittance values. A Self-Consistent, Unbiased Elliptical Exclusion (SCUBEEx) method is employed. Numerical data analysis techniques such as interpolation and nonlinear fi tting are also incorporated into the software. The software will provide a simplifi ed, fast tool for comprehensive emittance analysis. The main functions of the software package have been completed. In preliminary tests with experimental emittance data, the analysis results using the software were shown to be accurate.

  5. Frequency threshold for ion beam formation in expanding RF plasma

    Science.gov (United States)

    Chakraborty Thakur, Saikat; Harvey, Zane; Biloiu, Ioana; Hansen, Alex; Hardin, Robert; Przybysz, William; Scime, Earl

    2008-11-01

    We observe a threshold frequency for ion beam formation in expanding, low pressure, argon helicon plasma. Mutually consistent measurements of ion beam energy and density relative to the background ion density obtained with a retarding field energy analyzer and laser induced fluorescence indicate that a stable ion beam of 15 eV appears for source frequencies above 11.5 MHz. Reducing the frequency increases the upstream beam amplitude. Downstream of the expansion region, a clear ion beam is seen only for the higher frequencies. At lower frequencies, large electrostatic instabilities appear and an ion beam is not observed. The upstream plasma density increases sharply at the same threshold frequency that leads to the appearance of a stable double layer. The observations are consistent with the theoretical prediction that downstream electrons accelerated into the source by the double layer lead to increased ionization, thus balancing the higher loss rates upstream [1]. 1. M. A. Lieberman, C. Charles and R. W. Boswell, J. Phys. D: Appl. Phys. 39 (2006) 3294-3304

  6. Application of ion beams for polymeric carbon based biomaterials

    International Nuclear Information System (INIS)

    Evelyn, A.L.

    2001-01-01

    Ion beams have been shown to be quite suitable for the modification and analysis of carbon based biomaterials. Glassy polymeric carbon (GPC), made from cured phenolic resins, has a high chemical inertness that makes it useful as a biomaterial in medicine for drug delivery systems and for the manufacture of heart valves and other prosthetic devices. Low and high-energy ion beams have been used, with both partially and fully cured phenolic resins, to enhance biological cell/tissue growth on, and to increase tissue adhesion to GPC surfaces. Samples bombarded with energetic ion beams in the keV to MeV range exhibited increased surface roughness, measured using optical microscopy and atomic force microscopy. Ion beams were also used to perform nuclear reaction analyses of GPC encapsulated drugs for use in internal drug delivery systems. The results from the high energy bombardment were more dramatic and are shown in this paper. The interaction of energetic ions has demonstrated the useful application of ion beams to enhance the properties of carbon-based biomaterials

  7. Ion beam induced stress formation and relaxation in germanium

    Energy Technology Data Exchange (ETDEWEB)

    Steinbach, T., E-mail: Tobias.Steinbach@uni-jena.de [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena (Germany); Reupert, A.; Schmidt, E.; Wesch, W. [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)

    2013-07-15

    Ion irradiation of crystalline solids leads not only to defect formation and amorphization but also to mechanical stress. In the past, many investigations in various materials were performed focusing on the ion beam induced damage formation but only several experiments were done to investigate the ion beam induced stress evolution. Especially in microelectronic devices, mechanical stress leads to several unwanted effects like cracking and peeling of surface layers as well as changing physical properties and anomalous diffusion of dopants. To study the stress formation and relaxation process in semiconductors, crystalline and amorphous germanium samples were irradiated with 3 MeV iodine ions at different ion fluence rates. The irradiation induced stress evolution was measured in situ with a laser reflection technique as a function of ion fluence, whereas the damage formation was investigated by means of Rutherford backscattering spectrometry. The investigations show that mechanical stress builds up at low ion fluences as a direct consequence of ion beam induced point defect formation. However, further ion irradiation causes a stress relaxation which is attributed to the accumulation of point defects and therefore the creation of amorphous regions. A constant stress state is reached at high ion fluences if a homogeneous amorphous surface layer was formed and no further ion beam induced phase transition took place. Based on the results, we can conclude that the ion beam induced stress evolution seems to be mainly dominated by the creation and accumulation of irradiation induced structural modification.

  8. Novel magnetic controlled plasma sputtering method

    International Nuclear Information System (INIS)

    Axelevich, A.; Rabinovich, E.; Golan, G.

    1996-01-01

    A novel method to improve thin film vacuum sputtering is presented. This method is capable of controlling the sputtering plasma via an external set of magnets, in a similar fashion to the tetrode sputtering method. The main advantage of the Magnetic Controlled Plasma Sputtering (MCPS) is its ability to independently control all deposition parameters without any interference or cross-talk. Deposition rate, using the MCPS, is found to be almost twice the rate of triode and tetrode sputtering techniques. Experimental results using the MCPS to deposit Ni layers are described. It was demonstrated that using the MCPS method the ion beam intensity at the target is a result of the interaction of a homogeneous external magnetic field and the controlling magnetic fields. The MCPS method was therefore found to be beneficial for the production of pure stoichiometric thin solid films with high reproducibility. This method could be used for the production of compound thin films as well. (authors)

  9. Stress in ion-beam assisted silicon dioxide and tantalum pentoxide thin films

    International Nuclear Information System (INIS)

    Sirotkina, Natalia

    2003-01-01

    Ta 2 O 5 and SiO 2 thin films, deposited at room temperature by ion-beam sputtering (IBS) and dual ion-beam sputtering (DIBS), and SiO 2 films, deposited by reactive e-beam evaporation and ion-assisted deposition, were studied. The energy (150-600 eV) and ion-to-atom arrival ratio (0.27-2.0) of assisting argon and oxygen ions were varied. Influence of deposition conditions (deposition system geometry, nature and amount of gas in the chamber, substrate cleaning and ion-assistance parameters) on films properties (stress, composition, refractive index n 500nm and extinction coefficient k 500nm ) was investigated. A scanning method, based on substrate curvature measurements by laser reflection and stress calculation using the Stoney equation, was employed. RBS showed that stoichiometric Ta 2 O 5 films contain impurities of Ar, Fe and Mo. Stoichiometric SiO 2 films also contain Ta impurity. Argon content increases with ion bombardment and, at maximum incorporation, argon bubbles are registered by TEM. XPS studies are complicated by surface contaminations and preferential sputtering. Evaporated SiO 2 films show +100 MPa stress (+ is tensile, - compressive). With 300 eV Ar + bombardment, stress changes to -200 MPa, n 500nm decreases (1.56-1.49) and k 500nm increases (1.4x10 -4 - 1.8x10 -3 ). Of all studied IBS conditions, stress in SiO 2 (-560 MPa) and Ta 2 O 5 (-350 MPa) films depends only on sputtering gas species and oxygen entry point into the chamber. With argon and oxygen bombardment stress in IBS SiO 2 films decreases to -380 MPa and below the stress measurement system resolution, respectively. While Ar + bombardment of Ta 2 O 5 films leads to increase in stress to -490 MPa, the effect of oxygen assistance depends on ion energy. The observed behaviour was related to the total recoil density. In DIBS SiO 2 and Ta 2 O 5 films n 500nm varies in the region of 1.5-1.59 and 2.13-2.20 and k 500nm is below 5.5x10 -3 and 8.5x10 -3 , respectively. The refractive index

  10. New cultivar produced by heavy-ion beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Kanaya, Takeshi; Miyazaki, Kiyoshi; Suzuki, Kenichi; Iwaki, Kazunari [Suntory Flowers Ltd., Higashiomi, Shiga (Japan); Ichida, Hiroyuki; Hayashi, Yoriko; Saito, Hiroyuki; Ryuto, Hiromichi; Fukunishi, Nobuhisa; Abe, Tomoko [RIKEN, Nishina Center, Wako, Saitama (Japan)

    2007-03-15

    The RIKEN accelerator research facility (RARF) is the one of the biggest facilities to accelerate heavy ions in all over the world since 1986. We started our trials in plant breeding since 1993. Soon we found that the ion beam is highly effective in the cause of mutagenesis of tobacco embryos during the fertilization without damage to other plant tissue. RIKEN and Suntory Flowers Ltd. have jointly developed some new ornamental varieties of Verbena and Petunia using ion-beam irradiation. We already put 5 new flower cultivars on the market in Japan, USA, Canada and EU since 2002. We report here a new variety of Torenia obtained by ion-beam irradiation. (author)

  11. Ballistic-neutralized chamber transport of intense heavy ion beams

    International Nuclear Information System (INIS)

    Rose, D.V.; Welch, D.R.; Oliver, B.V.; Clark, R.E.; Sharp, W.M.; Friedman, A.

    2001-01-01

    Two-dimensional particle-in-cell simulations of intense heavy ion beams propagating in an inertial confinement fusion (ICF) reactor chamber are presented. The ballistic-neutralized transport scheme studied uses 4 GeV Pb +1 ion beams injected into a low-density, gas-filled reactor chamber and the beam is ballistically focused onto an ICF target before entering the chamber. Charge and current neutralization of the beam is provided by the low-density background gas. The ballistic-neutralized simulations include stripping of the beam ions as the beam traverses the chamber as well as ionization of the background plasma. In addition, a series of simulations are presented that explore the charge and current neutralization of the ion beam in an evacuated chamber. For this vacuum transport mode, neutralizing electrons are only drawn from sources near the chamber entrance

  12. Mutation induced with ion beam irradiation in rose

    Energy Technology Data Exchange (ETDEWEB)

    Yamaguchi, H. E-mail: yhiroya@nias.affrc.go.jp; Nagatomi, S.; Morishita, T.; Degi, K.; Tanaka, A.; Shikazono, N.; Hase, Y

    2003-05-01

    The effects of mutation induction by ion beam irradiation on axillary buds in rose were investigated. Axillary buds were irradiated with carbon and helium ion beams, and the solid mutants emerged after irradiation by repeated cutting back. In helium ion irradiation, mutations were observed in plants derived from 9 buds among 56 irradiated buds in 'Orange Rosamini' and in plants derived from 10 buds among 61 irradiated buds in 'Red Minimo'. In carbon ion, mutations were observed in plants derived from 12 buds among 88 irradiated buds in 'Orange Rosamini'. Mutations were induced not only in higher doses but also in lower doses, with which physiological effect by irradiation was hardly observed. Irradiation with both ion beams induced mutants in the number of petals, in flower size, in flower shape and in flower color in each cultivar.

  13. Lithium ion beam driven hohlraums for PBFA II

    International Nuclear Information System (INIS)

    Dukart, R.J.

    1994-01-01

    In our light ion inertial confinement fusion (ICF) program, fusion capsules are driven with an intense x-ray radiation field produced when an intense beam of ions penetrates a radiation case and deposits energy in a foam x-ray conversion region. A first step in the program is to generate and measure these intense fields on the Particle Beam Fusion Accelerator II (PBFA II). Our goal is to generate a 100-eV radiation temperature in lithium ion beam driven hohlraums, the radiation environment which will provide the initial drive temperature for ion beam driven implosion systems designed to achieve high gain. In this paper, we describe the design of such hohlraum targets and their predicted performance on PBFA II as we provide increasing ion beam intensities

  14. Facilities for radiotherapy with ion beams status and worldwide developments

    CERN Document Server

    Wolf, B H

    1999-01-01

    Forty-five years after the first ion beam therapy in Berkeley around 25,000 cancer patients worldwide have been treated successfully. Ion accelerators, designed for nuclear research, delivered most of this treatment. The first hospital-based facility started operation in 1998 at Loma Linda California, the first for heavier ions at Chiba, Japan in 1994 and the first commercially delivered facilities started operation in 1998 at Kashiwa, Japan. In 2000, the Harvard Medical Centre, Boston, US, will commence operation and several new facilities are planned or under construction worldwide, although none in Australia. This paper will discuss the physical and biological advantages of ion beams over x-rays and electrons. In the treatment of cancer patients ion beam therapy is especially suited for localised tumours in radiation sensitive areas like skull or spine. Heavier ions are also effective in anoxic tumour cells (found around the normally oxygenated cell population). An additional advantage of the heavier carbo...

  15. LET effects of high energy ion beam irradiation on polysilanes

    Energy Technology Data Exchange (ETDEWEB)

    Seki, Shu; Kanzaki, Kenichi; Tagawa, Seiichi; Yoshida, Yoichi [Osaka Univ., Ibaraki (Japan). Inst. of Scientific and Industrial Research; Kudoh, Hisaaki; Sugimoto, Masaki; Sasuga, Tsuneo; Seguchi, Tadao; Shibata, Hiromi

    1997-03-01

    Thin films of poly(di-n-hexylsilane) were irradiated with 2-20 MeV H{sup +} and He{sup +} ion beams. The beams caused heterogeneous reactions of crosslinking and main chain scission in the films. The relative efficiency of the crosslinking was drastically changed in comparison with that of main chain scission. The anomalous change in the molecular weight distribution was analyzed with increasing irradiation fluence, and the ion beam induced reaction radius; track radius was determined for the radiation sources by the function of molecular weight dispersion. Obtained values were 59{+-}15 A and 14{+-}6 A for 2 MeV He{sup +} and 20 MeV H{sup +} ion beams respectively. (author)

  16. Focused ion beam machining and deposition for nanofabrication

    Energy Technology Data Exchange (ETDEWEB)

    Davies, S T; Khamsehpour, B [Warwick Univ., Coventry (United Kingdom). Dept. of Engineering

    1996-05-01

    Focused ion beam micromatching (FIBM) and focused ion beam deposition (FIBD) enable spatially selective, maskless, patterning and processing of materials at extremely high levels of resolution. State-of-the-art focused ion beam (FIB) columns based on high brightness liquid metal ion source (LMIS) technology are capable of forming probes with dimensions of order 10 nm with a lower limit on spot size set by the inherent energy spread of the LMIS and the chromatic aberration of ion optical systems. The combination of high lateral and depth resolution make FIBM and FIBD powerful tools for nanotechnology applications. In this paper we present some methods of controlling FIBM and FIBD processes for nanofabrication purposes and discuss their limitations. (author).

  17. Neutralization principles for the Extraction and Transport of Ion Beams

    CERN Document Server

    Riege, H

    2000-01-01

    The strict application of conventional extraction techniques of ion beams from a plasma source is characterized by a natural intensity limit determined by space charge.The extracted current may be enhanced far beyond this limit by neutralizing the space charge of the extracted ions in the first extraction gap of the source with electrons injected from the opposite side. The transverse and longitudinal emittances of a neutralized ion beam, hence its brightness, are preserved. Results of beam compensation experiments, which have been carried out with a laser ion source, are resumed for proposing a general scheme of neutralizing ion sources and their adjacent low-energy beam transport channels with electron beams. Many technical applications of high-mass ion beam neutralization technology may be identified: the enhancement of ion source output for injection into high-intensity, low-and high-energy accelerators, or ion thrusters in space technology, for the neutral beams needed for plasma heating of magnetic conf...

  18. Ion beam mixing in Ag-Pd alloys

    International Nuclear Information System (INIS)

    Klatt, J.L.; Averback, R.S.; Peak, D.

    1989-01-01

    Ion beam mixing during 750 keV Kr + irradiation at 80 K was measured on a series of Ag-Pd alloys using Au marker atoms. The mixing in pure Ag was the greatest and it decreased monotonically with increasing Pd content, being a factor of 10 higher in pure Ag than in pure Pd. This large difference in mixing cannot be explained by the difference in cohesion energy between Ag and Pd in the thermodynamic model of ion beam mixing proposed by Johnson et al. [W. L. Johnson, Y. T. Cheng, M. Van Rossum, and M-A. Nicolet, Nucl. Instrum. Methods B 7/8, 657 (1985)]. An alternative model based on local melting in the cascade is shown to account for the ion beam mixing results in Ag and Pd

  19. Ion beam neutralization with ferroelectrically generated electron beams

    Energy Technology Data Exchange (ETDEWEB)

    Herleb, U; Riege, H [European Organization for Nuclear Research, Geneva (Switzerland). LHC Division

    1997-12-31

    A technique for ion beam space-charge neutralization with pulsed electron beams is described. The intensity of multiply-charged ions produced with a laser ion source can be enhanced or decreased separately with electron beam trains of MHz repetition rate. These are generated with ferroelectric cathodes, which are pulsed in synchronization with the laser ion source. The pulsed electron beams guide the ion beam in a similar way to the alternating gradient focusing of charged particle beams in circular accelerators such as synchrotrons. This new neutralization technology overcomes the Langmuir-Child space-charge limit and may in future allow ion beam currents to be transported with intensities by orders of magnitude higher than those which can be accelerated today in a single vacuum tube. (author). 6 figs., 10 refs.

  20. RF plasma source for heavy ion beam charge neutralization

    International Nuclear Information System (INIS)

    Efthimion, Philip C.; Gilson, Erik; Grisham, Larry; Davidson, Ronald C.; Yu, Simon S.; Logan, B. Grant

    2003-01-01

    Highly ionized plasmas are being used as a medium for charge neutralizing heavy ion beams in order to focus the ion beam to a small spot size. A radio frequency (RF) plasma source has been built at the Princeton Plasma Physics Laboratory (PPPL) in support of the joint Neutralized Transport Experiment (NTX) at the Lawrence Berkeley National Laboratory (LBNL) to study ion beam neutralization with plasma. The goal is to operate the source at pressures ∼ 10 -5 Torr at full ionization. The initial operation of the source has been at pressures of 10 -4 -10 -1 Torr and electron densities in the range of 10 8 -10 11 cm -3 . Recently, pulsed operation of the source has enabled operation at pressures in the 10 -6 Torr range with densities of 10 11 cm -3 . Near 100% ionization has been achieved. The source has been integrated with the NTX facility and experiments have begun

  1. New cultivar produced by heavy-ion beam irradiation

    International Nuclear Information System (INIS)

    Kanaya, Takeshi; Miyazaki, Kiyoshi; Suzuki, Kenichi; Iwaki, Kazunari; Ichida, Hiroyuki; Hayashi, Yoriko; Saito, Hiroyuki; Ryuto, Hiromichi; Fukunishi, Nobuhisa; Abe, Tomoko

    2007-01-01

    The RIKEN accelerator research facility (RARF) is the one of the biggest facilities to accelerate heavy ions in all over the world since 1986. We started our trials in plant breeding since 1993. Soon we found that the ion beam is highly effective in the cause of mutagenesis of tobacco embryos during the fertilization without damage to other plant tissue. RIKEN and Suntory Flowers Ltd. have jointly developed some new ornamental varieties of Verbena and Petunia using ion-beam irradiation. We already put 5 new flower cultivars on the market in Japan, USA, Canada and EU since 2002. We report here a new variety of Torenia obtained by ion-beam irradiation. (author)

  2. Final project report for NEET pulsed ion beam project

    Energy Technology Data Exchange (ETDEWEB)

    Kucheyev, S. O. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2018-01-11

    The major goal of this project was to develop and demonstrate a novel experimental approach to access the dynamic regime of radiation damage formation in nuclear materials. In particular, the project exploited a pulsed-ion-beam method in order to gain insight into defect interaction dynamics by measuring effective defect interaction time constants and defect diffusion lengths. This project had the following four major objectives: (i) the demonstration of the pulsed ion beam method for a prototypical nuclear ceramic material, SiC; (ii) the evaluation of the robustness of the pulsed beam method from studies of defect generation rate effects; (iii) the measurement of the temperature dependence of defect dynamics and thermally activated defect-interaction processes by pulsed ion beam techniques; and (iv) the demonstration of alternative characterization techniques to study defect dynamics. As we describe below, all these objectives have been met.

  3. Dust particle diffusion in ion beam transport region

    Energy Technology Data Exchange (ETDEWEB)

    Miyamoto, N.; Okajima, Y.; Romero, C. F.; Kuwata, Y.; Kasuya, T.; Wada, M., E-mail: mwada@mail.doshisha.ac.jp [Graduate school of Science and Engineering, Doshisha University, Kyotanabe, Kyoto 610-0321 (Japan)

    2016-02-15

    Dust particles of μm size produced by a monoplasmatron ion source are observed by a laser light scattering. The scattered light signal from an incident laser at 532 nm wavelength indicates when and where a particle passes through the ion beam transport region. As the result, dusts with the size more than 10 μm are found to be distributed in the center of the ion beam, while dusts with the size less than 10 μm size are distributed along the edge of the ion beam. Floating potential and electron temperature at beam transport region are measured by an electrostatic probe. This observation can be explained by a charge up model of the dust in the plasma boundary region.

  4. Neutralized ion beam modification of cellulose membranes for study of ion charge effect on ion-beam-induced DNA transfer

    Science.gov (United States)

    Prakrajang, K.; Sangwijit, K.; Anuntalabhochai, S.; Wanichapichart, P.; Yu, L. D.

    2012-02-01

    Low-energy ion beam biotechnology (IBBT) has recently been rapidly developed worldwide. Ion-beam-induced DNA transfer is one of the important applications of IBBT. However, mechanisms involved in this application are not yet well understood. In this study plasma-neutralized ion beam was applied to investigate ion charge effect on induction of DNA transfer. Argon ion beam at 7.5 keV was neutralized by RF-driven plasma in the beam path and then bombarded cellulose membranes which were used as the mimetic plant cell envelope. Electrical properties such as impedance and capacitance of the membranes were measured after the bombardment. An in vitro experiment on plasmid DNA transfer through the cellulose membrane was followed up. The results showed that the ion charge input played an important role in the impedance and capacitance changes which would affect DNA transfer. Generally speaking, neutral particle beam bombardment of biologic cells was more effective in inducing DNA transfer than charged ion beam bombardment.

  5. Low energy ion beam dynamics of NANOGAN ECR ion source

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Sarvesh, E-mail: sarvesh@iuac.res.in; Mandal, A.

    2016-04-01

    A new low energy ion beam facility (LEIBF) has been developed for providing the mass analyzed highly charged intense ion beams of energy ranging from a few tens of keV to a few MeV for atomic, molecular and materials sciences research. The new facility consists of an all permanent magnet 10 GHz electron cyclotron resonance (ECR) ion source (NANOGAN) installed on a high voltage platform (400 kV) which provides large currents of multiply charged ion beams. Higher emittance at low energy of intense ion beam puts a tremendous challenge to the beam optical design of this facility. The beam line consists of mainly the electrostatic quadrupoles, an accelerating section, analyzing cum switching magnet and suitable beam diagnostics including vacuum components. The accelerated ion beam is analyzed for a particular mass to charge (m/q) ratio as well as guided to three different lines along 75°, 90° and 105° using a large acceptance analyzing cum switching magnet. The details of transverse beam optics to all the beam lines with TRANSPORT and GICOSY beam optics codes are being described. Field computation code, OPERA 3D has been utilized to design the magnets and electrostatic quadrupoles. A theoretical estimation of emittance for optimized geometry of ion source is given so as to form the basis of beam optics calculations. The method of quadrupole scan of the beam is used to characterize the emittance of the final beam on the target. The measured beam emittance increases with m/q ratios of various ion beams similar to the trend observed theoretically.

  6. Ion beam irradiation of ceramics at fusion relevant conditions

    International Nuclear Information System (INIS)

    Zinkle, S.J.

    1991-01-01

    Ceramic materials are required at a variety of locations in proposed fusion reactors where significant ionizing and displacive fields may be present. Energetic ion beams are a useful tool for probing the effects of irradiation on the structure and electrical properties of ceramics over a wide range of experimental conditions. The advantages and disadvantages of using ion beams to provide information on anticipated ceramic radiation effects in a fusion reactor environment are discussed. In this paper particular emphasis is placed on microstructural changes and how the high helium generation rates associated with DT fusion neutrons affect cavity swelling

  7. Shunting arc plasma source for pure carbon ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Koguchi, H.; Sakakita, H.; Kiyama, S.; Shimada, T.; Sato, Y.; Hirano, Y. [Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan)

    2012-02-15

    A plasma source is developed using a coaxial shunting arc plasma gun to extract a pure carbon ion beam. The pure carbon ion beam is a new type of deposition system for diamond and other carbon materials. Our plasma device generates pure carbon plasma from solid-state carbon material without using a hydrocarbon gas such as methane gas, and the plasma does not contain any hydrogen. The ion saturation current of the discharge measured by a double probe is about 0.2 mA/mm{sup 2} at the peak of the pulse.

  8. Shunting arc plasma source for pure carbon ion beam.

    Science.gov (United States)

    Koguchi, H; Sakakita, H; Kiyama, S; Shimada, T; Sato, Y; Hirano, Y

    2012-02-01

    A plasma source is developed using a coaxial shunting arc plasma gun to extract a pure carbon ion beam. The pure carbon ion beam is a new type of deposition system for diamond and other carbon materials. Our plasma device generates pure carbon plasma from solid-state carbon material without using a hydrocarbon gas such as methane gas, and the plasma does not contain any hydrogen. The ion saturation current of the discharge measured by a double probe is about 0.2 mA∕mm(2) at the peak of the pulse.

  9. Broadband lasercooling of relativistic ion beams at ESR

    Energy Technology Data Exchange (ETDEWEB)

    Bussmann, Michael; Seltmann, Michael; Siebold, Matthias; Schramm, Ulrich [HZDR (Germany); Wen, Weiqiang; Zhang, Dacheng; Ma, Xinwen [IMPCAS, Lanzhou (China); Winters, Danyal; Clark, Colin; Kozhuharov, Christophor; Steck, Markus; Dimopoulou, Christina; Nolden, Fritz; Stoehlker, Thomas [GSI (Germany); Beck, Tobias; Rein, Benjamin; Walther, Thomas; Tichelmann, Sascha; Birkl, Gerhard [TU Darmstadt (Germany); Sanchez-Alarcon, Rodolfo; Ullmann, Johannes; Lochmann, Matthias; Noertershaeuser, Wilfried [GSI (Germany); Univ. Mainz (Germany)

    2013-07-01

    We present new results on laser cooling of relativistic C{sup 3+} ion beams at the Experimental Storage Ring at GSI. For the first time we could show laser cooling of bunched relativistic ion beams using fast scanning of the frequency of the cooling laser over a range larger than the momentum acceptance of the bucket. Unlike previously employed cooling schemes where the bucket frequency was scanned relatively to a fixed laser frequency, scanning of the laser frequency can be readily applied to future high energy storage rings such as HESR or SIS100 at FAIR.

  10. Hydrodynamic motion of a heavy-ion-beam-heated plasma

    International Nuclear Information System (INIS)

    Jacoby, J.; Hoffmann, D.H.H.; Mueller, R.W.; Mahrt-Olt, K.; Arnold, R.C.; Schneider, V.; Maruhn, J.

    1990-01-01

    The first experimental study is reported of a plasma produced by a heavy-ion beam. Relevant parameters for heating with heavy ions are described, temperature and density of the plasma are determined, and the hydrodynamic motion in the target induced by the beam is studied. The measured temperature and the free-electron density are compared with a two-dimensional hydrodynamic-model calculation. In accordance with the model, a radial rarefaction wave reaching the center of the target was observed and the penetration velocity of the ion beam into the xenon-gas target was measured

  11. Electromagnetic ion beam instability upstream of the earth's bow shock

    International Nuclear Information System (INIS)

    Gary, S.P.; Gosling, J.T.; Forslund, D.W.

    1981-01-01

    The linear theory of the electromagnetic ion beam instability for arbitrary angles of propagation has been studied. The parameters considered in the theory are typical of the solar wind upstream of the earth's bow shock when a 'reflected' proton beam is present. Maximum growth occurs for propagation parallel to the ambient field B, but this instability also displays significant growth at wave-vectors oblique to B, Oblique, unstable modes seem to be the likely source of the compressive magnetic fluctuations recently observed in conjunction with 'diffuse' ion population. An energetic ion beam does not directly give rise to linear growth of either ion acoustic or whistler mode instabilities

  12. Constraints on ion beam handling for intersecting beam experiments

    International Nuclear Information System (INIS)

    Kruse, T.

    1981-01-01

    The intense synchrotron radiation beams from the NSLS uv or x-ray storage rings still do not compare in monochromatized photon flux with a laser beam, a fact which becomes apparent in considering reaction rates for interaction of photon and ion beams. There are two prototypical interaction geometries, parallel and perpendicular. Calculations should properly be done in the rest frame of the ion beam; however, expected beta values are small, so the lab frame will be employed and aberration and Doppler shift effects neglected

  13. Dose Response of Alanine Detectors Irradiated with Carbon Ion Beams

    DEFF Research Database (Denmark)

    Herrmann, Rochus; Jäkel, Oliver; Palmans, Hugo

    2011-01-01

    Purpose: The dose response of the alanine detector shows a dependence on particle energy and type, when irradiated with ion beams. The purpose of this study is to investigate the response behaviour of the alanine detector in clinical carbon ion beams and compare the results with model predictions......-dose curves deviate from predictions in the peak region, most pronounced at the distal edge of the peak. Conclusions: The used model and its implementation show a good overall agreement for quasi mono energetic measurements. Deviations in depth-dose measurements are mainly attributed to uncertainties...

  14. Polarization Studies in Fast-Ion Beam Spectroscopy

    International Nuclear Information System (INIS)

    Trabert, E

    2001-01-01

    In a historical review, the observations and the insight gained from polarization studies of fast ions interacting with solid targets are presented. These began with J. Macek's recognition of zero-field quantum beats in beam-foil spectroscopy as indicating alignment, and D.G. Ellis' density operator analysis that suggested the observability of orientation when using tilted foils. Lastly H. Winter's studies of the ion-beam surface interaction at grazing incidence yielded the means to produce a high degree of nuclear orientation in ion beams

  15. Applications of capillary optics for focused ion beams

    International Nuclear Information System (INIS)

    Umezawa, Kenji

    2014-01-01

    This article introduces applications of focused ion beams (∼1 μm) with glass capillaries systems. A first report on the interaction between ion beams and glass capillaries was published in 1996. The guiding capabilities of glass capillaries were discovered due to ion reflection from inner wall of glass surfaces. Meanwhile, the similar optics have been already realized in focusing X-rays using glass capillaries. The basic technology of X-rays optics using glass capillaries had been developed in the 1980's and 1900's. Also, low energy atom scattering spectroscopy for insulator material analysis will be mentioned. (author)

  16. Overview of Light-Ion Beam Therapy

    International Nuclear Information System (INIS)

    Chu, William T.

    2006-01-01

    compared to those in conventional (photon) treatments. Wilson wrote his personal account of this pioneering work in 1997. In 1954 Cornelius Tobias and John Lawrence at the Radiation Laboratory (former E.O. Lawrence Berkeley National Laboratory) of the University of California, Berkeley performed the first therapeutic exposure of human patients to hadron (deuteron and helium ion) beams at the 184-Inch Synchrocyclotron. By 1984, or 30 years after the first proton treatment at Berkeley, programs of proton radiation treatments had opened at: University of Uppsala, Sweden, 1957; the Massachusetts General Hospital-Harvard Cyclotron Laboratory (MGH/HCL), USA, 1961; Dubna (1967), Moscow (1969) and St Petersburg (1975) in Russia; Chiba (1979) and Tsukuba (1983) in Japan; and Villigen, Switzerland, 1984. These centers used the accelerators originally constructed for nuclear physics research. The experience at these centers has confirmed the efficacy of protons and light ions in increasing the tumor dose relative to normal tissue dose, with significant improvements in local control and patient survival for several tumor sites. M.R. Raju reviewed the early clinical studies. In 1990, the Loma Linda University Medical Center in California heralded in the age of dedicated medical accelerators when it commissioned its proton therapy facility with a 250-MeV synchrotron. Since then there has been a relatively rapid increase in the number of hospital-based proton treatment centers around the world, and by 2006 there are more than a dozen commercially-built facilities in use, five new facilities under construction, and more in planning stages. In the 1950s larger synchrotrons were built in the GeV region at Brookhaven (3-GeV Cosmotron) and at Berkeley (6-GeV Bevatron), and today most of the world's largest accelerators are synchrotrons. With advances in accelerator design in the early 1970s, synchrotrons at Berkeley and Princeton accelerated ions with atomic numbers between 6 and 18, at

  17. Overview of Light-Ion Beam Therapy

    Energy Technology Data Exchange (ETDEWEB)

    Chu, William T.

    2006-03-16

    treatment volume compared to those in conventional (photon) treatments. Wilson wrote his personal account of this pioneering work in 1997. In 1954 Cornelius Tobias and John Lawrence at the Radiation Laboratory (former E.O. Lawrence Berkeley National Laboratory) of the University of California, Berkeley performed the first therapeutic exposure of human patients to hadron (deuteron and helium ion) beams at the 184-Inch Synchrocyclotron. By 1984, or 30 years after the first proton treatment at Berkeley, programs of proton radiation treatments had opened at: University of Uppsala, Sweden, 1957; the Massachusetts General Hospital-Harvard Cyclotron Laboratory (MGH/HCL), USA, 1961; Dubna (1967), Moscow (1969) and St Petersburg (1975) in Russia; Chiba (1979) and Tsukuba (1983) in Japan; and Villigen, Switzerland, 1984. These centers used the accelerators originally constructed for nuclear physics research. The experience at these centers has confirmed the efficacy of protons and light ions in increasing the tumor dose relative to normal tissue dose, with significant improvements in local control and patient survival for several tumor sites. M.R. Raju reviewed the early clinical studies. In 1990, the Loma Linda University Medical Center in California heralded in the age of dedicated medical accelerators when it commissioned its proton therapy facility with a 250-MeV synchrotron. Since then there has been a relatively rapid increase in the number of hospital-based proton treatment centers around the world, and by 2006 there are more than a dozen commercially-built facilities in use, five new facilities under construction, and more in planning stages. In the 1950s larger synchrotrons were built in the GeV region at Brookhaven (3-GeV Cosmotron) and at Berkeley (6-GeV Bevatron), and today most of the world's largest accelerators are synchrotrons. With advances in accelerator design in the early 1970s, synchrotrons at Berkeley and Princeton accelerated ions with atomic numbers

  18. Ion beam induces nitridation of silicon

    International Nuclear Information System (INIS)

    Petravic, M.; Williams, J.S.; Conway, M.

    1998-01-01

    High dose ion bombardment of silicon with reactive species, such as oxygen and nitrogen, has attracted considerable interest due to possible applications of beam-induced chemical compounds with silicon. For example, high energy oxygen bombardment of Si is now routinely used to form buried oxide layers for device purposes, the so called SIMOX structures. On the other hand, Si nitrides, formed by low energy ( 100 keV) nitrogen beam bombardment of Si, are attractive as oxidation barriers or gate insulators, primarily due to the low diffusivity of many species in Si nitrides. However, little data exists on silicon nitride formation during bombardment and its angle dependence, in particular for N 2 + bombardment in the 10 keV range, which is of interest for analytical techniques such as SIMS. In SIMS, low energy oxygen ions are more commonly used as bombarding species, as oxygen provides stable ion yields and enhances the positive secondary ion yield. Therefore, a large body of data can be found in the literature on oxide formation during low energy oxygen bombardment. Nitrogen bombardment of Si may cause similar effects to oxygen bombardment, as nitrogen and oxygen have similar masses and ranges in Si, show similar sputtering effects and both have the ability to form chemical compounds with Si. In this work we explore this possibility in some detail. We compare oxide and nitride formation during oxygen and nitrogen ion bombardment of Si under similar conditions. Despite the expected similar behaviour, some large differences in compound formation were found. These differences are explained in terms of different atomic diffusivities in oxides and nitrides, film structural differences and thermodynamic properties. (author)

  19. Ion beam assisted synthesis of nano-crystals in glasses (silver and lead chalcogenides)

    International Nuclear Information System (INIS)

    Espiau de Lamaestre, R.

    2005-04-01

    This work deals with the interest in ion beams for controlling nano-crystals synthesis in glasses. We show two different ways to reach this aim, insisting on importance of redox phenomena induced by the penetration and implantation of ions in glasses. We first show that we can use the great energy density deposited by the ions to tailor reducing conditions, favorable to metallic nano-crystal precipitation. In particular, we show that microscopic mechanism of radiation induced silver precipitation in glasses are analogous to the ones of classical photography. Ion beams can also be used to overcome supersaturation of elements in a given matrix. In this work, we synthesized lead chalcogenide nano-crystals (PbS, PbSe, PbTe) whose optical properties are interesting for telecommunication applications. We demonstrate the influence of complex chalcogenide chemistry in oxide glasses, and its relationship with the observed loss of growth control when nano-crystals are synthesized by sequential implantation of Pb and S in pure silica. As a consequence of this understanding, we demonstrate a novel and controlled synthesis of PbS nano-crystals, consisting in implanting sulfur into a Pb-containing glass, before annealing. Choice of glass composition provides a better control of precipitation physico-chemistry, whereas the use of implantation allows high nano-crystal volume fractions to be reached. Our study of IR emission properties of these nano-crystals shows a very high excitation cross section, and evidence for a 'dark exciton' emitting level. (author)

  20. Thermomechanical response of Large Hadron Collider collimators to proton and ion beam impacts

    Directory of Open Access Journals (Sweden)

    Marija Cauchi

    2015-04-01

    Full Text Available The CERN Large Hadron Collider (LHC is designed to accelerate and bring into collision high-energy protons as well as heavy ions. Accidents involving direct beam impacts on collimators can happen in both cases. The LHC collimation system is designed to handle the demanding requirements of high-intensity proton beams. Although proton beams have 100 times higher beam power than the nominal LHC lead ion beams, specific problems might arise in case of ion losses due to different particle-collimator interaction mechanisms when compared to protons. This paper investigates and compares direct ion and proton beam impacts on collimators, in particular tertiary collimators (TCTs, made of the tungsten heavy alloy INERMET® 180. Recent measurements of the mechanical behavior of this alloy under static and dynamic loading conditions at different temperatures have been done and used for realistic estimates of the collimator response to beam impact. Using these new measurements, a numerical finite element method (FEM approach is presented in this paper. Sequential fast-transient thermostructural analyses are performed in the elastic-plastic domain in order to evaluate and compare the thermomechanical response of TCTs in case of critical beam load cases involving proton and heavy ion beam impacts.

  1. Sequential Ar-O2 sputtering of Y2O3, BaF2, and CuO targets for preparation of Y-Ba-Cu-O superconducting films without wet-O2 annealing

    International Nuclear Information System (INIS)

    Bhushan, M.; Strauss, A.J.; Finn, M.C.

    1989-01-01

    Superconducting Y-Ba-Cu-O (YBCO) films have been prepared by ex situ O 2 annealing of multilayer films deposited on yttria-stabilized zirconia substrates by sequential rf diode sputtering of Y 2 O 3 , BaF 2 , and CuO targets, all of which are chemically stable. If sputtering is performed in an Ar ambient, the as-deposited films contain sufficient F to require its removal by annealing in wet O 2 at about 800 degree C or above before the superconducting YBCO phase can be formed by annealing in dry O 2 . However, sputtering in an Ar-O 2 ambient greatly reduces the F content, making it possible to obtain the superconducting phase by annealing in dry O 2 only. If the ambient contains about 20% O 2 , films with T c (R=0)>85 K can be prepared without wet-O 2 annealing. The Ar-O 2 process therefore has the potential for in situ preparation of superconducting YBCO films

  2. Drag of ballistic electrons by an ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Gurevich, V. L.; Muradov, M. I., E-mail: mag.muradov@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

    2015-12-15

    Drag of electrons of a one-dimensional ballistic nanowire by a nearby one-dimensional beam of ions is considered. We assume that the ion beam is represented by an ensemble of heavy ions of the same velocity V. The ratio of the drag current to the primary current carried by the ion beam is calculated. The drag current turns out to be a nonmonotonic function of velocity V. It has a sharp maximum for V near v{sub nF}/2, where n is the number of the uppermost electron miniband (channel) taking part in conduction and v{sub nF} is the corresponding Fermi velocity. This means that the phenomenon of ion beam drag can be used for investigation of the electron spectra of ballistic nanostructures. We note that whereas observation of the Coulomb drag between two parallel quantum wires may in general be complicated by phenomena such as tunneling and phonon drag, the Coulomb drag of electrons of a one-dimensional ballistic nanowire by an ion beam is free of such spurious effects.

  3. On- and off-line monitoring of ion beam treatment

    Energy Technology Data Exchange (ETDEWEB)

    Parodi, Katia, E-mail: katia.parodi@lmu.de

    2016-02-11

    Ion beam therapy is an emerging modality for high precision radiation treatment of cancer. In comparison to conventional radiation sources (photons, electrons), ion beams feature major dosimetric advantages due to their finite range with a localized dose deposition maximum, the Bragg peak, which can be selectively adjusted in depth. However, due to several sources of treatment uncertainties, full exploitation of these dosimetric advantages in clinical practice would require the possibility to visualize the stopping position of the ions in vivo, ideally in real-time. To this aim, different imaging methods have been proposed and investigated, either pre-clinically or even clinically, based on the detection of prompt or delayed radiation following nuclear interaction of the beam with the irradiated tissue. However, the chosen or ad-hoc developed instrumentation has often relied on technologies originally conceived for different applications, thus compromising on the achievable performances for the sake of cost-effectiveness. This contribution will review major examples of used instrumentation and related performances, identifying the most promising detector developments for next generation devices especially dedicated to on-line monitoring of ion beam treatment. Moreover, it will propose an original combination of different techniques in a hybrid detection scheme, aiming to make the most of complementary imaging methods and open new perspectives of image guidance for improved precision of ion beam therapy.

  4. High energy density in matter produced by heavy ion beams

    International Nuclear Information System (INIS)

    1987-08-01

    This annual report summarizes the results of research carried out in 1986 within the framework of the program 'High Energy Density in Matter Produced by Heavy Ion Beams' which is funded by the Federal Ministry for Research and Technology. Its initial motivation and its ultimate goal is the question whether inertial confinement can be achieved by intense beams of heavy ions. (orig./HSI)

  5. Recent radioactive ion beam program at RIKEN and related topics

    Indian Academy of Sciences (India)

    Recent experimental programs at RIKEN concerning RI beams are reviewed. RIKEN has the ring cyclotron (RRC) with high intense heavy-ion beams and large acceptance fragment separator, RIPS. The complex can provide high intense RI-beams. By using the high intense RI-beams, a variety of experiments have been ...

  6. Microfabricated Ion Beam Drivers for Magnetized Target Fusion

    Science.gov (United States)

    Persaud, Arun; Seidl, Peter; Ji, Qing; Ardanuc, Serhan; Miller, Joseph; Lal, Amit; Schenkel, Thomas

    2015-11-01

    Efficient, low-cost drivers are important for Magnetized Target Fusion (MTF). Ion beams offer a high degree of control to deliver the required mega joules of driver energy for MTF and they can be matched to several types of magnetized fuel targets, including compact toroids and solid targets. We describe an ion beam driver approach based on the MEQALAC concept (Multiple Electrostatic Quadrupole Array Linear Accelerator) with many beamlets in an array of micro-fabricated channels. The channels consist of a lattice of electrostatic quadrupoles (ESQ) for focusing and of radio-frequency (RF) electrodes for ion acceleration. Simulations with particle-in-cell and beam envelope codes predict >10x higher current densities compared to state-of-the-art ion accelerators. This increase results from dividing the total ion beam current up into many beamlets to control space charge forces. Focusing elements can be biased taking advantage of high breakdown electric fields in sub-mm structures formed using MEMS techniques (Micro-Electro-Mechanical Systems). We will present results on ion beam transport and acceleration in MEMS based beamlets. Acknowledgments: This work is supported by the U.S. DOE under Contract No. DE-AC02-05CH11231.

  7. Micromachining structured optical fibers using focused ion beam milling

    NARCIS (Netherlands)

    Martelli, C.; Olivero, P.; Canning, J.; Groothoff, N.; Gibson, B.; Huntington, S.

    2007-01-01

    A focused ion beam is used to mill side holes in air-silica structured fibers. By way of example, side holes are introduced in two types of air-structured fiber, (1) a photonic crystal four-ring fiber and (2) a six-hole single-ring step-index structured fiber. © 2007 Optical Society of America.

  8. Important atomic physics issues for ion beam fusion

    International Nuclear Information System (INIS)

    Bangerter, R.O.

    1985-01-01

    This paper suggests several current atomic physics questions important to ion beam fusion. Among the topics discussed are beam transport, beam-target interaction, and reactor design. The major part of the report is discussion concerning areas of research necessary to better understand beam-target interactions

  9. Initial stages of the ion beam mixing process

    International Nuclear Information System (INIS)

    Traverse, A.; Le Boite, M.G.; Nevot, L.; Pardo, B.; Corno, J.

    1987-01-01

    The grazing x-ray reflectometry technique, performed on irradiated periodic multilayers, was used to study the early stages of the ion beam mixing process. We present our first results, obtained on NiAu samples irradiated with He ions. The experimental fluence dependence of the effective diffusion coefficient is in good agreement with a calculation based on a purely ballistic process

  10. ION-BEAM CHANNELING IN A QUASI-CRYSTAL

    NARCIS (Netherlands)

    VANVOORTHUYSEN, EHD; SMULDERS, PJM; WERKMAN, RD; DEBOER, JL; VANSMAALEN, S

    1992-01-01

    We have observed ion-beam channeling in a quasicrystal. For 1-MeV He-4+ ions in icosahedral Al-Cu-Fe the maximum effect found is 36%. The full width at half maximum of the observed dips is 1.3-degrees. The effect persists up to great depths (> 200 nm), thus showing a high degree of ordering in this

  11. Two dimensional simulation of ion beam-plasm interaction | Echi ...

    African Journals Online (AJOL)

    Hybrid plasma simulation is a model in which different components of the plasma are treated differently. In this work the ions are treated as particles while the electrons are treated as a neutralizing background fluid through which electric signals may propagate. Deuterium ion beams incident on the tritium plasma interact ...

  12. Recent radioactive ion beam program at RIKEN and related topics

    Indian Academy of Sciences (India)

    Keywords. RIKEN; radioactive ion beams; magic numbers. PACS No. 21.10.-k. 1. Introduction. In RIKEN, there are several heavy ion accelerators. Main accelerator is the RIKEN ring cyclotron (RRC) with K = 540, that has been operated from 1986. The RRC has two injectors; one is heavy ion linear accelerator that has been ...

  13. Molecular carbon nitride ion beams for enhanced corrosion resistance of stainless steel

    Science.gov (United States)

    Markwitz, A.; Kennedy, J.

    2017-10-01

    A novel approach is presented for molecular carbon nitride beams to coat stainless surfaces steel using conventional safe feeder gases and electrically conductive sputter targets for surface engineering with ion implantation technology. GNS Science's Penning type ion sources take advantage of the breaking up of ion species in the plasma to assemble novel combinations of ion species. To test this phenomenon for carbon nitride, mixtures of gases and sputter targets were used to probe for CN+ ions for simultaneous implantation into stainless steel. Results from mass analysed ion beams show that CN+ and a variety of other ion species such as CNH+ can be produced successfully. Preliminary measurements show that the corrosion resistance of stainless steel surfaces increased sharply when implanting CN+ at 30 keV compared to reference samples, which is interesting from an application point of view in which improved corrosion resistance, surface engineering and short processing time of stainless steel is required. The results are also interesting for novel research in carbon-based mesoporous materials for energy storage applications and as electrode materials for electrochemical capacitors, because of their high surface area, electrical conductivity, chemical stability and low cost.

  14. Plasma ion sources and ion beam technology in microfabrications

    International Nuclear Information System (INIS)

    Ji, Lili

    2007-01-01

    For over decades, focused ion beam (FIB) has been playing a very important role in microscale technology and research, among which, semiconductor microfabrication is one of its biggest application area. As the dimensions of IC devices are scaled down, it has shown the need for new ion beam tools and new approaches to the fabrication of small-scale devices. In the meanwhile, nanotechnology has also deeply involved in material science research and bioresearch in recent years. The conventional FIB systems which utilize liquid gallium ion sources to achieve nanometer scale resolution can no longer meet the various requirements raised from such a wide application area such as low contamination, high throughput and so on. The drive towards controlling materials properties at nanometer length scales relies on the availability of efficient tools. In this thesis, three novel ion beam tools have been developed and investigated as the alternatives for the conventional FIB systems in some particular applications. An integrated focused ion beam (FIB) and scanning electron microscope (SEM) system has been developed for direct doping or surface modification. This new instrument employs a mini-RF driven plasma source to generate focused ion beam with various ion species, a FEI two-lens electron (2LE) column for SEM imaging, and a five-axis manipulator system for sample positioning. An all-electrostatic two-lens column has been designed to focus the ion beam extracted from the source. Based on the Munro ion optics simulation, beam spot sizes as small as 100 nm can be achieved at beam energies between 5 to 35 keV if a 5 (micro)m-diameter extraction aperture is used. Smaller beam spot sizes can be obtained with smaller apertures at sacrifice of some beam current. The FEI 2LE column, which utilizes Schottky emission, electrostatic focusing optics, and stacked-disk column construction, can provide high-resolution (as small as 20 nm) imaging capability, with fairly long working distance

  15. Ion beam techniques for analyzing polymers irradiated by ions

    International Nuclear Information System (INIS)

    Rickards, J.; Zironi, E.P.; Andrade, E.; Dominguez, B.

    1992-01-01

    In the study of the effects of ion beam irradiation of polymers very large doses can be administered in short times. Thousands of MGy can be produced in a small volume of a sample in a few minutes by bombarding with typical ion beam currents. For instance, in an experiment done to observe the effects of 750 keV proton irradiation PVC, using a collimator of 1 mm diameter, 1 μC of charge integration deposits a dose of 50 MGy. The use of ion beams also opens up the possibility of using the same beam for irradiation and for analysis of the effects, using the well known ion beam analysis techniques. PIXE allows the measurement of chlorine in PVC. Polymers containing fluorine can be measured with the resonant nuclear reaction (RNR) technique, which is specific only to certain elements. The amount of hydrogen in the sample and its profile can be obtained using energy recoil detection analysis (ERDA); carbon, oxygen, and nitrogen can be measured and profiled using Rutherford backscattering (RBS) and also using the (d,p) and (d, α) nuclear reactions (NR). Loss of mass is one effect that can be studied using these techniques. It was studied in two different polymers, PVC and CR-39, in order to determine carbon buildup during ion irradiation. It was concluded that carbon builds up following different mechanisms in these two materials, due to the different possibilities of forming volatile compounds. It is also suggested that CR-39 should be a good material for ion beam lithography. (author)

  16. Ion beam modification of surfaces for biomedical applications

    International Nuclear Information System (INIS)

    Sommerfeld, Jana

    2014-01-01

    Human life expectancy increased significantly within the last century. Hence, medical care must ever be improved. Optimizing artificial replacements such as hip joints or stents etc. is of special interest. For this purpose, new materials are constantly developed or known ones modified. This work focused on the possibility to change the chemistry and topography of biomedically relevant materials such as diamond-like carbon (DLC) and titanium dioxide (TiO 2 ) by means of ion beam irradiation. Mass-separated ion beam deposition was used in order to synthesize DLC layers with a high sp 3 content (> 70%), a sufficiently smooth surface (RMS<1 nm) and a manageable film thickness (50 nm). The chemistry of the DLC layers was changed by ion beam doping with different ion species (Ag,Ti) and concentrations. Additionally, the surface topography of silicon and titanium dioxide was altered by ion beam irradiation under non-perpendicular angle of incidence. The created periodic wave structures (so-called ripples) were characterized and their dependency on the ion energy was investigated. Moreover, ripples on silicon were covered with a thin DLC layer in order to create DLC ripples. The biocompatibility of all samples was investigated by adsorption experiments. For this purpose, human plasma fibrinogen (HPF) was used due to its ambiphilic character, which allows the protein to assume different conformations on materials with different hydrophilicities. Moreover, HPF is a crucial factor in the blood coagulation process. This work comes to the conclusion that the interaction of both, the surface chemistry and topography, has a strong influence on the adsorption behavior of HPF and thus the biocompatibility of a material. Both factors can be specifically tuned by means of ion beam irradiation.

  17. Hot oxygen atoms: Their generation and chemistry. [Production by sputtering; reaction with butenes

    Energy Technology Data Exchange (ETDEWEB)

    Ferrieri, R.A.; Chu, Yung Y.; Wolf, A.P.

    1987-01-01

    Oxygen atoms with energies between 1 and 10 eV have been produced through ion beam sputtering from metal oxide targets. Argon ion beams were used on Ta/sub 2/O/sub 5/ and V/sub 2/O/sub 5/. Results show that some control may be exerted over the atom's kinetic energy by changing the target. Reactions of the hot O(/sup 3/P) with cis- and trans-butenes were investigated. (DLC)

  18. Mini biased collimated faraday cups for measurement of intense pulsed ion beams

    International Nuclear Information System (INIS)

    He Xiaoping; Shi Lei; Zhang Jiasheng; Qiu Aici

    2000-01-01

    An analysis of principle of a biased Faraday cup for measuring ion beams density and the main reasons related to the measuring accuracy were presented. An array of mini biased collimated Faraday cups was manufactured for the measurement of ion beam density of a compact 200 keV high power ion beam source. In the experiments the maximum density of ion beam was in the center of the beam, and it was about 170 A/cm 2

  19. Images of Complex Interactions of an Intense Ion Beam with Plasma Electrons

    International Nuclear Information System (INIS)

    Kaganovich, Igor D.; Startsev, Edward; Davidson, Ronald C.

    2004-01-01

    Ion beam propagation in a background plasma is an important scientific issue for many practical applications. The process of ion beam charge and current neutralization is complex because plasma electrons move in strong electric and magnetic fields of the beam. Computer simulation images of plasma interaction with an intense ion beam pulse are presented

  20. Bipolar pulse generator for intense pulsed ion beam accelerator

    International Nuclear Information System (INIS)

    Ito, H.; Igawa, K.; Kitamura, I.; Masugata, K.

    2007-01-01

    A new type of pulsed ion beam accelerator named ''bipolar pulse accelerator'' (BPA) has been proposed in order to improve the purity of intense pulsed ion beams. To confirm the principle of the BPA, we developed a bipolar pulse generator for the bipolar pulse experiment, which consists of a Marx generator and a pulse forming line (PFL) with a rail gap switch on its end. In this article, we report the first experimental result of the bipolar pulse and evaluate the electrical characteristics of the bipolar pulse generator. When the bipolar pulse generator was operated at 70% of the full charge condition of the PFL, the bipolar pulse with the first (-138 kV, 72 ns) and the second pulse (+130 kV, 70 ns) was successfully obtained. The evaluation of the electrical characteristics indicates that the developed generator can produce the bipolar pulse with fast rise time and sharp reversing time

  1. Production of ion beam by conical pinched electron beam diode

    International Nuclear Information System (INIS)

    Matsukawa, Y.; Nakagawa, Y.

    1982-01-01

    Some properties of the ion beam produced by pinched electron beam diode having conical shape electrodes and organic insulator anode was studied. Ion energy is about 200keV and the peak diode current is about 30 kA. At 11cm from the diode apex, not the geometrical focus point, concentrated ion beam was obtained. Its density is more than 500A/cm 2 . The mean ion current density within the radius of 1.6cm around the axis from conical diode is two or three times that from an usual pinched electron beam diode with flat parallel electrodes of same dimension and impedance under the same conditions. (author)

  2. Magnetic fusion with high energy self-colliding ion beams

    International Nuclear Information System (INIS)

    Rostoker, N.; Wessel, F.; Maglich, B.; Fisher, A.

    1992-06-01

    Field-reversed configurations of energetic large orbit ions with neutralizing electrons have been proposed as the basis of a fusion reactor. Vlasov equilibria consisting of a ring or an annulus have been investigated. A stability analysis has been carried out for a long thin layer of energetic ions in a low density background plasma. There is a growing body of experimental evidence from tokamaks that energetic ions slow down and diffuse in accordance with classical theory in the presence of large non-thermal fluctuations and anomalous transport of low energy (10 keV) ions. Provided that major instabilities are under control, it seems likely that the design of a reactor featuring energetic self-colliding ion beams can be based on classical theory. In this case a confinement system that is much better than a tokamak is possible. Several methods are described for creating field reversed configurations with intense neutralized ion beams

  3. Research results for the applications of high power ion beams

    International Nuclear Information System (INIS)

    Yang Hailiang; Qiu Aici; Sun Jianfeng; He Xiaoping; Tang Junping; Wang Haiyang; Zhang Jiasheng; Xu Ri; Peng Jianchang; Ren Shuqing; Li Peng; Yang Li; Huang Jianjun; Zhang Guoguang; Ouyang Xiaoping; Li Hongyu

    2003-01-01

    The results obtained in the theoretical and experimental studies for the application of high power ion beams in certain areas of nuclear physics and material science are reported. The preliminary experimental results of generating 6-7 MeV quasi-monoenergetic pulsed γ-rays with high power pulsed proton beams striking 19 F target on the Flash II accelerator are presented. By placing the target far enough downstream, the quasi-monoenergetic pulsed γ-rays can be discriminated experimentally from the diode Bremsstrahlung. This article also describes the other applications of high power ion beams and the preliminary experimental and theoretical results in simulation of soft X-ray thermal-mechanical effects, generation of high intense pulsed neutrons, equation of state and shock-wave physics experiments, surface modification and so on

  4. A new technique for ion beam tritium labelling

    International Nuclear Information System (INIS)

    Zhang Nianbao; Sheng Shugang; Yao Fuzeng

    1990-06-01

    An advanced technique, the ion beam tritium labelling method (IBTL), used for labelling proteins, peptides and other nonvolatile organic compounds is introduced. In this method the excited tritium ion beam is accelerated and then bombs a solid sample target in which tritium exchanging for hydrogen is taken place. The IBTL has been used for preparation of tritiated soybean trypsin inhibitor, ribonuclease A, elastin and pachyman etc. After purifing by dialysis, ion exchange chromatography and gel filtration, the tritiated proteins and polysaccharide were obtained with the specific activity over 37 GBq/mmol, the function of tritiated decomposition products was not found. The product was shown to have native biological activity. Amino acid analysis of tritiated protein showed that the relative specific radioactivities were higher for His., Tyr. and Phe. but lower for Val., Ile. and Ser

  5. Effects on focused ion beam irradiation on MOS transistors

    International Nuclear Information System (INIS)

    Campbell, A.N.; Peterson, K.A.; Fleetwood, D.M.; Soden, J.M.

    1997-01-01

    The effects of irradiation from a focused ion beam (FIB) system on MOS transistors are reported systematically for the first time. Three MOS transistor technologies, with 0.5, 1, and 3 μm minimum feature sizes and with gate oxide thicknesses ranging from 11 to 50 nm, were analyzed. Significant shifts in transistor parameters (such as threshold voltage, transconductance, and mobility) were observed following irradiation with a 30 keV Ga + focused ion beam with ion doses varying by over 5 orders of magnitude. The apparent damage mechanism (which involved the creation of interface traps, oxide trapped charge, or both) and extent of damage were different for each of the three technologies investigated

  6. Magnetic fusion with high energy self-colliding ion beams

    International Nuclear Information System (INIS)

    Restoker, N.; Wessel, F.; Maglich, B.; Fisher, A.

    1993-01-01

    Field-reversed configurations of energetic large orbit ions with neutralizing electrons have been proposed as the basis of a fusion reactor. Vlasov equilibria consisting of a ring or an annulus have been investigated. A stability analysis has been carried out for a long thin layer of energetic ions in a low density background plasma. There is a growing body of experimental evidence from tokamaks that energetic ions slow down and diffuse in accordance with classical theory in the presence of large non-thermal fluctuations and anomalous transport of low energy (10 keV) ions. Provided that major instabilities are under control, it seems likely that the design of a reactor featuring energetic self-colliding ion beams can be based on classical theory. In this case a confinement system that is much better than a tokamak is possible. Several methods are described for creating field reversed configurations with intense neutralized ion beams

  7. Induction of surface modification of polytetrafluoroethylene with proton ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Noh, I S; Kim, H R; Choi, Y J; Park, H S [Seoul National Univ. of Technology, Seoul (Korea, Republic of)

    2007-04-15

    Cardiovascular disease is one of the leading causes of the death in the USA and developed countries. More than 570,000 artery bypass graft surgeries per USA are performed each year, though percutaneous devices have abounded in extreme cases. Based on the surgery follow-ups, large diameter expanded polytetrafluoroethylene (ePTFE) (>5 mm) are clinically employed with good results but its clinical applications in smaller vessels is still problematic due to thrombosis and neointima formation. Achievement of high patency grafts has been to some extent achieved by numerous methods of surface modification techniques, but its results are less than its initial hopes. As examples, endothelial cells coated on the luminal surface of ePTFE has demonstrated limited success after recirculation. Surface modifications of PTFE film with either argon ion beam or UV light from Xe-excimer lamp were reported to increase its interaction with vascular endothelial cell. Surface modification of poly(lactide-co-glycolide)[PLGA] is also very important in tissue engineering, in where induction of its initial high cellular adhesion and spreading is a critical step for development of tissue engineering medical products. We previously reported tissue engineering of the hybrid ePTFE scaffold by seeding smooth muscle cells and subsequently evaluation of its tissue regeneration behaviors and stabilities with circulation of pulsatile flow. To improve its tissue engineering more quickly, we here performed surface modification of ePTFE and porous PLGA scaffold and evaluated its subsequent chemical and biological properties after treating its surface with low energy ion beams. The porous ePTFE was prepared in a round shape (diameter = 1 cm) and dried after organic solvent extraction for ion beam treatment. Another porous PLGA layers (d = 1 cm, t = 1 cm with approximately 92% porosity) were fabricated and treated its surface by irradiating low energy either nitrogen or argon ion beams (1 keV, 1x1015 ions

  8. Holifield Radioactive Ion Beam Facility Development and Status

    CERN Document Server

    Tatum, Alan

    2005-01-01

    The Holifield Radioactive Ion Beam Facility (HRIBF) is a national user facility dedicated to nuclear structure, reactions, and nuclear astrophysics research with radioactive ion beams (RIBs) using the isotope separator on-line (ISOL) technique. An integrated strategic plan for physics, experimental systems, and RIB production facilities have been developed and implementation of the plan is under way. Specific research objectives are defined for studying the nature of nucleonic matter, the origin of elements, solar physics, and synthesis of heavy elements. Experimental systems upgrade plans include new detector arrays and beam lines, and expansion and upgrade of existing devices. A multifaceted facility expansion plan includes a $4.75M High Power Target Laboratory (HPTL), presently under construction, to provide a facility for testing new target materials, target geometries, ion sources, and beam preparation techniques. Additional planned upgrades include a second RIB production system (IRIS2), an external axi...

  9. Atomistic modeling of ion beam induced amorphization in silicon

    International Nuclear Information System (INIS)

    Pelaz, Lourdes; Marques, Luis A.; Lopez, Pedro; Santos, Ivan; Aboy, Maria; Barbolla, Juan

    2005-01-01

    Ion beam induced amorphization in Si has attracted significant interest since the beginning of the use of ion implantation for the fabrication of Si devices. Nowadays, a renewed interest in the modeling of amorphization mechanisms at atomic level has arisen due to the use of preamorphizing implants and high dopant implantation doses for the fabrication of nanometric-scale Si devices. In this work, we briefly describe the existing phenomenological and defect-based amorphization models. We focus on the atomistic model we have developed to describe ion beam induced amorphization in Si. In our model, the building block for the amorphous phase is the bond defect or IV pair, whose stability increases with the number of surrounding IV pairs. This feature explains the regrowth behavior of different damage topologies and the kinetics of the crystalline to amorphous transition. The model provides excellent quantitative agreement with experimental results

  10. Surface studies with high-energy ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Stensgaard, Ivan [Aarhus Univ. (Denmark). Inst. of Physics

    1992-07-01

    High-energy ion scattering is an extremely useful technique for surface studies. Three methods for surface composition analysis (Rutherford backscattering, nuclear-reaction analysis and elastic recoil detection) are discussed. Directional effects in ion-beam surface interactions (shadowing and blocking) form the basis for surface structure analysis with high-energy ion beams and these phenomena are addressed in some detail. It is shown how surface relaxation and reconstruction, as well as positions of adsorbed atoms, can be determined by comparison with computer simulations. A special technique called transmission channelling is introduced and shown to be particularly well suited for studies of adsorption positions, even of hydrogen. Recent developments in the field are demonstrated by discussing a large number of important (experimental) applications which also include surface dynamics and melting, as well as epitaxy and interface structure. (author).

  11. DIAGNOSTICS FOR ION BEAM DRIVEN HIGH ENERGY DENSITY PHYSICS EXPERIMENTS

    International Nuclear Information System (INIS)

    Bieniosek, F.M.; Henestroza, E.; Lidia, S.; Ni, P.A.

    2010-01-01

    Intense beams of heavy ions are capable of heating volumetric samples of matter to high energy density. Experiments are performed on the resulting warm dense matter (WDM) at the NDCX-I ion beam accelerator. The 0.3 MeV, 30-mA K + beam from NDCX-I heats foil targets by combined longitudinal and transverse neutralized drift compression of the ion beam. Both the compressed and uncompressed parts of the NDCX-I beam heat targets. The exotic state of matter (WDM) in these experiments requires specialized diagnostic techniques. We have developed a target chamber and fielded target diagnostics including a fast multi-channel optical pyrometer, optical streak camera, laser Doppler-shift interferometer (VISAR), beam transmission diagnostics, and high-speed gated cameras. We also present plans and opportunities for diagnostic development and a new target chamber for NDCX-II.

  12. Hydrodynamics of layer structured targets impinged by intense ion beams

    International Nuclear Information System (INIS)

    Davila, J.; Barrero, A.

    1989-01-01

    To minimize the energy loss in the corona outflow, a layer structured spherical hollow shell has been proposed to be used as target in inertial confinement fusion. For ion beam drivers, the major part of the beam energy is absorbed in the middle layer, which is called either absorber or pusher. The outer layer, called tamper, slows down the outward expansion of the absorbed low density region. The materials of the tamper and pusher are usually in the inner layer. The knowledge of the hydrodynamics of the interaction of an intense beam with a structured target is then an essential point in order to achieve break-even conditions in ion-beam fusion. (author) 2 refs., 2 figs

  13. Longitudinal dynamics of laser-cooled fast ion beams

    DEFF Research Database (Denmark)

    Weidemüller, M.; Eike, B.; Eisenbarth, U.

    1999-01-01

    We present recent results of our experiments on laser cooling of fast stored ion beams at the Heidelberg Test Storage Ring. The longitudinal motion of the ions is directly cooled by the light pressure force, whereas efficient transverse cooling is obtained indirectly by longitudinal-transverse co......We present recent results of our experiments on laser cooling of fast stored ion beams at the Heidelberg Test Storage Ring. The longitudinal motion of the ions is directly cooled by the light pressure force, whereas efficient transverse cooling is obtained indirectly by longitudinal....... When applying laser cooling in square-well buckets over long time intervals, hard Coulomb collisions suddenly disappear and the longitudinal temperature drops by about a factor of three. The observed longitudinal behaviour of the beam shows strong resemblance with the transition to an Coulomb...

  14. Status of ion beam data analysis and simulation software

    Energy Technology Data Exchange (ETDEWEB)

    Rauhala, E. [Accelerator Laboratory, Department of Physics, University of Helsinki, P.O. Box 43, FIN-00014 Helsinki (Finland)]. E-mail: eero.rauhala@helsinki.fi; Barradas, N.P. [Instituto Tecnologico e Nuclear, Estrada Nacional No. 10, Apartado 21, 2686-953 Sacavem (Portugal); Centro de Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisbon (Portugal); Fazinic, S. [Rudjer Boskovic Institute, Bijenicka c.54, 10000 Zagreb (Croatia); Mayer, M. [Max-Planck-Institut fuer Plasmaphysik, EURATOM Association, Boltzmannstr. 2, D-85748 Garching (Germany); Szilagyi, E. [KFKI Research Institute for Particle and Nuclear Physics, P.O. Box 49, H-1525 Budapest (Hungary); Thompson, M. [Department of MS and E/Bard Hall 328, Cornell University, Ithaca, NY 14853 (United States)

    2006-03-15

    The status of ion beam data analysis codes dedicated to Rutherford backscattering, elastic recoil detection analysis and non-resonant nuclear reaction analysis, is reviewed. The most important methods and approaches employed are discussed. The stopping power and scattering cross-section databases used, the ion-target interaction physics, the experimental and detection system characteristics and the structure of samples all have a strong impact on the analytical results. The models and algorithms used by different codes are reviewed and discussed in detail. Limitations in existing codes and perspectives for further developments are presented. The importance of ascertaining the correctness and accuracy of different methods and codes used in ion beam data analysis is stressed.

  15. Numerical simulation of crystalline ion beams in storage ring

    CERN Document Server

    Meshkov, I N; Katayama, T; Sidorin, A; Smirnov, A Yu; Syresin, E M; Trubnikov, G; Tsutsui, H

    2004-01-01

    The use of crystalline ion beams can increase luminosity in the collider and in experiments with targets for investigation of rare radioactive isotopes. The ordered state of circulating ion beams was observed at several storage rings: NAP-M (Proceedings of the Fourth All Union Conference on Charged Particle Accelerators, Vol. 2, Nauka, Moscow, 1975 (in Russian); Part. Accel. 7 (1976) 197; At. Energy 40 (1976) 49; Preprint CERN/PS/AA 79-41, Geneva, 1979) (Novosibirsk), ESR (Phys. Rev. Lett. 77 (1996) 3803) and SIS (Proceedings of EPAC'2000, 2000) (Darmstadt), CRYRING (Proceedings of PAC'2001, 2001) (Stockholm) and PALLAS (Proceedings of the Conference on Applications of Accelerators in Research and Industry, AIP Conference Proceedings, p. 576, in preparation) (Munchen). New criteria of the beam orderliness are derived and verified with a new program code. Molecular dynamics technique is inserted in BETACOOL program (Proceedings of Beam Cooling and Related Topics, Bad Honnef, Germany, 2001) and used for numeric...

  16. Induction of surface modification of polytetrafluoroethylene with proton ion beams

    International Nuclear Information System (INIS)

    Noh, I. S.; Kim, H. R.; Choi, Y. J.; Park, H. S.

    2007-04-01

    Cardiovascular disease is one of the leading causes of the death in the USA and developed countries. More than 570,000 artery bypass graft surgeries per USA are performed each year, though percutaneous devices have abounded in extreme cases. Based on the surgery follow-ups, large diameter expanded polytetrafluoroethylene (ePTFE) (>5 mm) are clinically employed with good results but its clinical applications in smaller vessels is still problematic due to thrombosis and neointima formation. Achievement of high patency grafts has been to some extent achieved by numerous methods of surface modification techniques, but its results are less than its initial hopes. As examples, endothelial cells coated on the luminal surface of ePTFE has demonstrated limited success after recirculation. Surface modifications of PTFE film with either argon ion beam or UV light from Xe-excimer lamp were reported to increase its interaction with vascular endothelial cell. Surface modification of poly(lactide-co-glycolide)[PLGA] is also very important in tissue engineering, in where induction of its initial high cellular adhesion and spreading is a critical step for development of tissue engineering medical products. We previously reported tissue engineering of the hybrid ePTFE scaffold by seeding smooth muscle cells and subsequently evaluation of its tissue regeneration behaviors and stabilities with circulation of pulsatile flow. To improve its tissue engineering more quickly, we here performed surface modification of ePTFE and porous PLGA scaffold and evaluated its subsequent chemical and biological properties after treating its surface with low energy ion beams. The porous ePTFE was prepared in a round shape (diameter = 1 cm) and dried after organic solvent extraction for ion beam treatment. Another porous PLGA layers (d = 1 cm, t = 1 cm with approximately 92% porosity) were fabricated and treated its surface by irradiating low energy either nitrogen or argon ion beams (1 keV, 1x1015 ions

  17. ECR plasma source for heavy ion beam charge neutralization

    Science.gov (United States)

    Efthimion, Philip C.; Gilson, Erik; Grisham, Larry; Kolchin, Pavel; Davidson, Ronald C.; Yu, Simon; Logan, B. Grant

    2003-01-01

    Highly ionized plasmas are being considered as a medium for charge neutralizing heavy ion beams in order to focus beyond the space-charge limit. Calculations suggest that plasma at a density of 1 100 times the ion beam density and at a length [similar]0.1 2 m would be suitable for achieving a high level of charge neutralization. An Electron Cyclotron Resonance (ECR) source has been built at the Princeton Plasma Physics Laboratory (PPPL) to support a joint Neutralized Transport Experiment (NTX) at the Lawrence Berkeley National Laboratory (LBNL) to study ion beam neutralization with plasma. The ECR source operates at 13.6 MHz and with solenoid magnetic fields of 1 10 gauss. The goal is to operate the source at pressures [similar]10[minus sign]6 Torr at full ionization. The initial operation of the source has been at pressures of 10[minus sign]4 10[minus sign]1 Torr. Electron densities in the range of 108 to 1011 cm[minus sign]3 have been achieved. Low-pressure operation is important to reduce ion beam ionization. A cusp magnetic field has been installed to improve radial confinement and reduce the field strength on the beam axis. In addition, axial confinement is believed to be important to achieve lower-pressure operation. To further improve breakdown at low pressure, a weak electron source will be placed near the end of the ECR source. This article also describes the wave damping mechanisms. At moderate pressures (> 1 mTorr), the wave damping is collisional, and at low pressures (< 1 mTorr) there is a distinct electron cyclotron resonance.

  18. Stress-tolerant mutants induced by heavy-ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Abe, Tomoko; Yoshida, Shigeo [Institute of Physical and Chemical Research, Wako, Saitama (Japan); Bae, Chang-Hyu [Sunchon National University, Sunchon (Korea); Ozaki, Takuo [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment; Wang, Jing Ming [Akita Prefectural Univ. (Japan)

    2000-07-01

    Comparative study was made on mutagenesis in tobacco embryo induced by exposure to EMS (ethyl methane-sulfonate) ion beams during the fertilization cycle. Tobacco embryo cells immediately after pollination were exposed to heavy ion beam and the sensitivity to the irradiation was assessed in each developmental stage and compared with the effects of EMS, a chemical mutagen. Morphologically abnormality such as chlorophyll deficiency was used as a marker. A total of 17 salt-tolerant plants were selected from 3447 M{sub 1} seeds. A cell line showed salt resistance. The cell growth and chlorophyll content were each two times higher than that of WT cells in the medium containing 154 mM NaCl. Seven strains of M{sub 3} progeny of 17 salt-tolerant plants, showed strong resistance, but no salt tolerant progeny were obtained from Xanthi or Ne-ion irradiation. This shows that the sensitivity of plant embryo to this irradiation technique may vary among species. When exposed to {sup 14}N ion beam for 24-108 hours after pollination, various morphological mutants appeared at 18% in M{sub 1} progeny and herbicide tolerant and salt tolerant mutants were obtained. A strong Co-tolerant strain was obtained in two of 17 salt-tolerant strains and a total of 46 tolerant strains (0.2%) were obtained from 22,272 grains of M{sub 1} seeds. In these tolerant strains, the absorption of Co was slightly decreased, but those of Mg and Mn were increased. Mutants induced with ion-beam irradiation have potential not only for practical use in the breeding of stress-tolerant plants but also for gene analysis that will surely facilitate the molecular understanding of the tolerance mechanisms. (M.N.)

  19. Stress-tolerant mutants induced by heavy-ion beams

    International Nuclear Information System (INIS)

    Abe, Tomoko; Yoshida, Shigeo; Bae, Chang-Hyu; Ozaki, Takuo

    2000-01-01

    Comparative study was made on mutagenesis in tobacco embryo induced by exposure to EMS (ethyl methane-sulfonate) ion beams during the fertilization cycle. Tobacco embryo cells immediately after pollination were exposed to heavy ion beam and the sensitivity to the irradiation was assessed in each developmental stage and compared with the effects of EMS, a chemical mutagen. Morphologically abnormality such as chlorophyll deficiency was used as a marker. A total of 17 salt-tolerant plants were selected from 3447 M 1 seeds. A cell line showed salt resistance. The cell growth and chlorophyll content were each two times higher than that of WT cells in the medium containing 154 mM NaCl. Seven strains of M 3 progeny of 17 salt-tolerant plants, showed strong resistance, but no salt tolerant progeny were obtained from Xanthi or Ne-ion irradiation. This shows that the sensitivity of plant embryo to this irradiation technique may vary among species. When exposed to 14 N ion beam for 24-108 hours after pollination, various morphological mutants appeared at 18% in M 1 progeny and herbicide tolerant and salt tolerant mutants were obtained. A strong Co-tolerant strain was obtained in two of 17 salt-tolerant strains and a total of 46 tolerant strains (0.2%) were obtained from 22,272 grains of M 1 seeds. In these tolerant strains, the absorption of Co was slightly decreased, but those of Mg and Mn were increased. Mutants induced with ion-beam irradiation have potential not only for practical use in the breeding of stress-tolerant plants but also for gene analysis that will surely facilitate the molecular understanding of the tolerance mechanisms. (M.N.)

  20. Direct deposition of gold on silicon with focused ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Nebiker, P.W.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muehle, R. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

    1997-09-01

    Irradiation with ions at very low energies (below 500 eV) no longer induces a removal of substrate material, but the ions are directly deposited on the surface. In this way, gold has been deposited on silicon with focused ion beam exposure and the properties of the film have been investigated with atomic force microscopy and Auger electron spectroscopy. (author) 3 figs., 1 ref.

  1. Cobalt alloy ion sources for focused ion beam implantation

    Energy Technology Data Exchange (ETDEWEB)

    Muehle, R.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Zimmermann, P. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

    1997-09-01

    Cobalt alloy ion sources have been developed for silicide formation by focused ion beam implantation. Four eutectic alloys AuCo, CoGe, CoY and AuCoGe were produced by electron beam welding. The AuCo liquid alloy ion source was investigated in detail. We have measured the emission current stability, the current-voltage characteristics, and the mass spectrum as a function of the mission current. (author) 1 fig., 2 refs.

  2. Ion beam alignment in the MSX-4 mass spectrometer

    International Nuclear Information System (INIS)

    Busygin, A.I.; Nevzorov, A.A.; Ul'masbaev, B.Sh.

    1977-01-01

    A method for electrically adjusting an ion beam in an MSKh-4 mass-spectrometer has been developed. The adjusting system consists of two deflecting plates fastened to the frame of the ion source. By adjusting the potential difference at the plates in the range 0-150 v, one can increase the intensity of the mass-spectrum by a factor of 3 to 5

  3. Ion beam polishing for three-dimensional electron backscattered diffraction

    DEFF Research Database (Denmark)

    Saowadee, Nath; Agersted, Karsten; Ubhi, H.S.

    2013-01-01

    averaging and/or poor 3D-EBSD data quality. In this work a low kV focused ion beam was successfully implemented to automatically polish surfaces during 3D-EBSD of La- and Nb-doped strontium titanate of volume 12.6 × 12.6 × 3.0 μm. The key to achieving this technique is the combination of a defocused low k...

  4. Dynamics of heavy ion beams during longitudinal compression

    International Nuclear Information System (INIS)

    Ho, D.D.M.; Bangerter, R.O.; Lee, E.P.; Brandon, S.; Mark, J.W.K.

    1987-01-01

    Heavy ion beams with initially uniform line charge density can be compressed longitudinally by an order of magnitude in such a way that the compressed beam has uniform line charge density and velocity-tilt profiles. There are no envelope mismatch oscillations during compression. Although the transverse temperature varies along the beam and also varies with time, no substantial longitudinal and transverse emittance growth has been observed. Scaling laws for beam radius and transport system parameters are given

  5. Freestanding nanostructures via reactive ion beam angled etching

    Directory of Open Access Journals (Sweden)

    Haig A. Atikian

    2017-05-01

    Full Text Available Freestanding nanostructures play an important role in optical and mechanical devices for classical and quantum applications. Here, we use reactive ion beam angled etching to fabricate optical resonators in bulk polycrystalline and single crystal diamond. Reported quality factors are approximately 30 000 and 286 000, respectively. The devices show uniformity across 25 mm samples, a significant improvement over comparable techniques yielding freestanding nanostructures.

  6. Production of highly charged ion beams with SECRAL

    International Nuclear Information System (INIS)

    Sun, L. T.; Zhao, H. W.; Zhang, X. Z.; Feng, Y. C.; Li, J. Y.; Guo, X. H.; Ma, H. Y.; Zhao, H. Y.; Ma, B. H.; Wang, H.; Li, X. X.; Jin, T.; Xie, D. Z.; Lu, W.; Cao, Y.; Shang, Y.

    2010-01-01

    Superconducting electron cyclotron resonance ion source with advanced design in Lanzhou (SECRAL) is an all-superconducting-magnet electron cyclotron resonance ion source (ECRIS) for the production of intense highly charged ion beams to meet the requirements of the Heavy Ion Research Facility in Lanzhou (HIRFL). To further enhance the performance of SECRAL, an aluminum chamber has been installed inside a 1.5 mm thick Ta liner used for the reduction of x-ray irradiation at the high voltage insulator. With double-frequency (18+14.5 GHz) heating and at maximum total microwave power of 2.0 kW, SECRAL has successfully produced quite a few very highly charged Xe ion beams, such as 10 e μA of Xe 37+ , 1 e μA of Xe 43+ , and 0.16 e μA of Ne-like Xe 44+ . To further explore the capability of the SECRAL in the production of highly charged heavy metal ion beams, a first test run on bismuth has been carried out recently. The main goal is to produce an intense Bi 31+ beam for HIRFL accelerator and to have a feel how well the SECRAL can do in the production of very highly charged Bi beams. During the test, though at microwave power less than 3 kW, more than 150 e μA of Bi 31+ , 22 e μA of Bi 41+ , and 1.5 e μA of Bi 50+ have been produced. All of these results have again demonstrated the great capability of the SECRAL source. This article will present the detailed results and brief discussions to the production of highly charged ion beams with SECRAL.

  7. Highly focused ion beams in integrated circuit testing

    International Nuclear Information System (INIS)

    Horn, K.M.; Dodd, P.E.; Doyle, B.L.

    1996-01-01

    The nuclear microprobe has proven to be a useful tool in radiation testing of integrated circuits. This paper reviews single event upset (SEU) and ion beam induced charge collection (IBICC) imaging techniques, with special attention to damage-dependent effects. Comparisons of IBICC measurements with three-dimensional charge transport simulations of charge collection are then presented for isolated p-channel field effect transistors under conducting and non-conducting bias conditions

  8. TECHNOLOGIES FOR DELIVERY OF PROTON AND ION BEAMS FOR RADIOTHERAPY

    CERN Document Server

    Owen, H; Alonso, J; Mackay, R

    2014-01-01

    Recent developments for the delivery of proton and ion beam therapy have been significant, and a number of technological solutions now exist for the creation and utilisation of these particles for the treatment of cancer. In this paper we review the historical development of particle accelerators used for external beam radiotherapy and discuss the more recent progress towards more capable and cost-effective sources of particles.

  9. Focused ion beam patterned Hall nano-sensors

    International Nuclear Information System (INIS)

    Candini, A.; Gazzadi, G.C.; Di Bona, A.; Affronte, M.; Ercolani, D.; Biasiol, G.; Sorba, L.

    2007-01-01

    By means of focused ion beam milling, we fabricate Hall magnetometers with active areas as small as 100x100nm 2 . The constituent material can either be metallic (Au), semimetallic (Bi) or doped bulk semiconducting (Si doped GaAs). We experimentally show that Au nano-probes can work from room temperature down to liquid helium with magnetic flux sensitivity -1 Φ 0

  10. Ion beam analysis of diffusion in heterogeneous materials

    International Nuclear Information System (INIS)

    Clough, A.S.; Jenneson, P.M.

    1998-01-01

    Ion-beam analysis has been applied to a variety of problems involving diffusion in heterogeneous materials. An energy loss technique has been used to study both the diffusion of water and the surface segregation of fluoropolymers in polymeric matrices. A scanning micro-beam technique has been developed to allow water concentrations in hydrophilic polymers and cements to be measured together with associated solute elements. It has also been applied to the diffusion of shampoo into hair. (orig.)

  11. Ion beam analysis of diffusion in heterogeneous materials

    Energy Technology Data Exchange (ETDEWEB)

    Clough, A.S.; Jenneson, P.M. [Surrey Univ., Guildford (United Kingdom). Dept. of Physics

    1998-04-01

    Ion-beam analysis has been applied to a variety of problems involving diffusion in heterogeneous materials. An energy loss technique has been used to study both the diffusion of water and the surface segregation of fluoropolymers in polymeric matrices. A scanning micro-beam technique has been developed to allow water concentrations in hydrophilic polymers and cements to be measured together with associated solute elements. It has also been applied to the diffusion of shampoo into hair. (orig.) 13 refs.

  12. Gas cluster ion beam equipments for industrial applications

    International Nuclear Information System (INIS)

    Matsuo, J.; Takaoka, G.H.; Yamada, I.

    1995-01-01

    30 keV and 200 keV gas cluster ion beam equipments have been developed for industrial applications. A gas cluster source with a non-cooled nozzle was used for both the equipments. Sufficient monomer ion suppression was achieved by using an ExB filter and chromatic lenses mass filter with low extraction voltage. These equipments are suitable to be used for low-damage surface treatment of metals, insulators and semiconductors without heavy metal contamination. (orig.)

  13. Constructing carbon nanotube junctions by Ar ion beam irradiation

    International Nuclear Information System (INIS)

    Ishaq, Ahmad; Ni Zhichun; Yan Long; Gong Jinlong; Zhu Dezhang

    2010-01-01

    Carbon nanotubes (CNTs) irradiated by Ar ion beams at elevated temperature were studied. The irradiation-induced defects in CNTs are greatly reduced by elevated temperature. Moreover, the two types of CNT junctions, the crossing junction and the parallel junction, were formed. And the CNT networks may be fabricated by the two types of CNT junctions. The formation process and the corresponding mechanism of CNT networks are discussed.

  14. Ion-beam spectroscopic studies of the 69As nucleus

    International Nuclear Information System (INIS)

    Badica, T.; Cojocaru, V.; Olariu, A.; Petre, M.; Popescu, I. V.; Gheboianu, A.

    2009-01-01

    Excited state of the neutron deficient 69 As nucleus were investigated in the 58 Ni( 14 N,2pn) reaction by ion-beam γ spectroscopic methods (excitation functions, γγ-coincidences, angular distributions and linear polarization gated with neutrons). A new more complete level scheme of 69 As has been proposed with spin-parity values. The structure of the nucleus is discussed in the framework of the interaction boson-fermion model (IBFM). (authors)

  15. High energy density in matter produced by heavy ion beams

    International Nuclear Information System (INIS)

    1989-07-01

    This Annual Report summarizes research activities carried out in 1988 in the framework of the government-funded program 'High Energy Density in Matter produced by Heavy Ion Beams'. It addresses fundamental problems of the generation of heavy ion beams and the investigation of hot dense plasmas produced by these beams. Its initial motivation and its long-term goal is the feasibility of inertial confinement fusion by intense heavy ion beams. Two outstanding events deserve to be mentioned explicity, the Heavy Ion Inertial Fusion Conference held in Darmstadt and organized by GSI end of June and the first heavy ion beam injected into the new SIS facility in November. The former event attracted more than hundred scientists for three days to the 4th Conference in this field. This symposium showed the impressive progress since the last conference in Washington two years ago. In particular the first beams in MBE-4 at LBL and results of beam plasma interaction experiments at GSI open new directions for future investigations. The ideas for non-Lionvillean injection into storage rings presented by Carlo Rubbia will bring the discussion of driver scenarios into a new stage. The latter event is a milestone for both machine and target experiments. It characterizes the beginning of the commissioning phase for the new SIS/ESR facility which will be ready for experiments at the end of this year. The commissioning of SIS is on schedule and first experiments can start at the beginning of 1990. A status report of the accelerator project is included. Theoretical activities were continued as in previous years, many of them providing guide lines for future experiments, in particular for the radiation transport aspects and for beam-plasma interaction. (orig.)

  16. Theory of Nanocluster Size Distributions from Ion Beam Synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, C.W.; Yi, D.O.; Sharp, I.D.; Shin, S.J.; Liao, C.Y.; Guzman, J.; Ager III, J.W.; Haller, E.E.; Chrzan, D.C.

    2008-06-13

    Ion beam synthesis of nanoclusters is studied via both kinetic Monte Carlo simulations and the self-consistent mean-field solution to a set of coupled rate equations. Both approaches predict the existence of a steady state shape for the cluster size distribution that depends only on a characteristic length determined by the ratio of the effective diffusion coefficient to the ion flux. The average cluster size in the steady state regime is determined by the implanted species/matrix interface energy.

  17. Waferscale Electrostatic Quadrupole Array for Multiple Ion Beam Manipulation

    OpenAIRE

    Vinayakumar, K. B.; Persaud, A.; Seidl, P. A.; Ji, Q.; Waldron, W. L.; Schenkel, T.; Ardanuc, S.; Lal, A.

    2018-01-01

    We report on the first through-wafer silicon-based Electrostatic Quadrupole Array (ESQA) to focus high energy ion beams. This device is a key enabler for a wafer based accelerator architecture that lends itself to orders-of-magnitude reduction in cost, volume and weight of charged particle accelerators. ESQs are a key building block in developing compact Multiple Electrostatic Quadrupole Array Linear Accelerator (MEQALAC) [1]. In a MEQALAC electrostatic forces are used to focus ions, and elec...

  18. Digital pulse processor for ion beam microprobe imaging

    International Nuclear Information System (INIS)

    Bogovac, M.; Jaksic, M.; Wegrzynek, D.; Markowicz, A.

    2009-01-01

    Capabilities of spectroscopic ion beam analysis (IBA) techniques that are available in ion microprobe facilities can be greatly improved by the use of digital pulse processing. We report here development of a digital multi parameter data acquisition system suitable for IBA imaging applications. Input signals from charge sensitive preamplifier are conditioned by using a simple circuit and digitized with fast ADCs. The digitally converted signals are processed in real time using FPGA. Implementation of several components of the system is presented.

  19. Ion beams from high-current PF facilities

    Energy Technology Data Exchange (ETDEWEB)

    Sadowski, M [Soltan Inst. for Nuclear Studies, Otwock-Swierk (Poland)

    1997-12-31

    Pulsed beams of fast deuterons and impurity or admixture ions emitted from high-current PF-type facilities operated in different laboratories are dealt with. A short comparative analysis of time-integrated and time-resolved studies is presented. Particular attention is paid to the microstructure of such ion beams, and to the verification of some theoretical models. (author). 5 figs., 19 refs.

  20. Rotating light ion beam-plasma system in inertial confinement fusion

    International Nuclear Information System (INIS)

    Murakami, H.; Okada, T.

    1997-01-01

    The stabilizing mechanism of filamentation instability in light ion beam propagation is studied numerically by using a particle-in-cell code. Rotating light ion beam scheme has been proposed for the light ion beam propagation. The filamentation instability is stabilized by the external magnetic field which is induced by the rotating light ion beams. From a dispersion relation, linear growth rates of filamentation instabilities are obtained in a light ion beam-plasma system with an external magnetic field. The theory and simulation comparisons illustrate the results. (author)

  1. Intense ion beam neutralization using underdense background plasma

    Energy Technology Data Exchange (ETDEWEB)

    Berdanier, William [Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States); Princeton Plasma Physics Laboratory, Princeton University, Princeton, New Jersey 08543 (United States); Roy, Prabir K. [Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Kaganovich, Igor [Princeton Plasma Physics Laboratory, Princeton University, Princeton, New Jersey 08543 (United States)

    2015-01-15

    Producing an overdense background plasma for neutralization purposes with a density that is high compared to the beam density is not always experimentally possible. We show that even an underdense background plasma with a small relative density can achieve high neutralization of intense ion beam pulses. Using particle-in-cell simulations, we show that if the total plasma electron charge is not sufficient to neutralize the beam charge, electron emitters are necessary for effective neutralization but are not needed if the plasma volume is so large that the total available charge in the electrons exceeds that of the ion beam. Several regimes of possible underdense/tenuous neutralization plasma densities are investigated with and without electron emitters or dense plasma at periphery regions, including the case of electron emitters without plasma, which does not effectively neutralize the beam. Over 95% neutralization is achieved for even very underdense background plasma with plasma density 1/15th the beam density. We compare results of particle-in-cell simulations with an analytic model of neutralization and find close agreement with the particle-in-cell simulations. Further, we show experimental data from the National Drift Compression experiment-II group that verifies the result that underdense plasma can neutralize intense heavy ion beams effectively.

  2. RF Plasma Source for Heavy Ion Beam Charge Neutralization

    Science.gov (United States)

    Efthimion, P. C.; Gilson, E.; Grisham, L.; Davidson, R. C.

    2003-10-01

    Highly ionized plasmas are being employed as a medium for charge neutralizing heavy ion beams in order to focus to a small spot size. Calculations suggest that plasma at a density of 1 - 100 times the ion beam density and at a length 0.1-0.5 m would be suitable for achieving a high level of charge neutralization. An ECR source has been built at the Princeton Plasma Physics Laboratory (PPPL) in support of the joint Neutralized Transport Experiment (NTX) at the Lawrence Berkeley National Laboratory (LBNL) to study ion beam neutralization with plasma. The ECR source operates at 13.6 MHz and with solenoid magnetic fields of 0-10 gauss. The goal is to operate the source at pressures 10-5 Torr at full ionization. The initial operation of the source has been at pressures of 10-4 - 10-1 Torr. Electron densities in the range of 10^8 - 10^11 cm-3 have been achieved. Recently, pulsed operation of the source has enabled operation at pressures in the 10-6 Torr range with densities of 10^11 cm-3. Near 100% ionization has been achieved. The source has been integrated with NTX and is being used in the experiments. The plasma is approximately 10 cm in length in the direction of the beam propagation. Modifications to the source will be presented that increase its length in the direction of beam propagation.

  3. Ferroelectric Plasma Source for Heavy Ion Beam Charge Neutralization

    CERN Document Server

    Efthimion, Philip; Gilson, Erik P; Grisham, Larry; Logan, B G; Waldron, William; Yu, Simon

    2005-01-01

    Plasmas are employed as a medium for charge neutralizing heavy ion beams to allow them to focus to a small spot size. Calculations suggest that plasma at a density of 1-100 times the ion beam density and at a length ~ 0.1-1 m would be suitable. To produce 1 meter plasma, large-volume plasma sources based upon ferroelectric ceramics are being considered. These sources have the advantage of being able to increase the length of the plasma and operate at low neutral pressures. The source will utilize the ferroelectric ceramic BaTiO3 to form metal plasma. The drift tube inner surface of the Neutralized Drift Compression Experiment (NDCX) will be covered with ceramic. High voltage (~ 1-5 kV) is applied between the drift tube and the front surface of the ceramic by placing a wire grid on the front surface. A prototype ferroelectric source 20 cm long produced plasma densities ~ 5x1011 cm-3. The source was integrated into the experiment and successfully charge neutralized the K ion beam. Presently, the 1 meter source ...

  4. Current neutralization in ballistic transport of light ion beams

    International Nuclear Information System (INIS)

    Hubbard, R.F.; Slinker, S.P.; Lampe, M.; Joyce, G.; Ottinger, P.

    1992-01-01

    Intense light ion beams are being considered as drivers to ignite fusion targets in the Laboratory Microfusion Facility (LMF). Ballistic transport of these beams from the diode to the target is possible only if the beam current is almost completely neutralized by plasma currents. This paper summarizes related work on relativistic electron beam and heavy ion beam propagation and describes a simple simulation model (DYNAPROP) which has been modified to treat light ion beam propagation. DYNAPROP uses an envelope equation to treat beam dynamics and uses rate equations to describe plasma and conductivity generation. The model has been applied both to the high current, 30 MeV Li +3 beams for LMF as well as low current, 1.2 MeV proton beams which are currently being studied on GAMBLE B at the Naval Research Laboratory. The predicted ratio of net currents to beam current is ∼0.1--0.2 for the GAMBLE experiment and ∼0.01 for LMF. The implications of these results for LMF and the GAMBLE experiments art discussed in some detail. The simple resistive model in DYNAPROP has well-known limitations in the 1 torr regime which arise primarily from the neglect of plasma electron transport. Alternative methods for treating the plasma response are discussed

  5. Radioactive ion beams and techniques for solid state research

    International Nuclear Information System (INIS)

    Correia, J.G.

    1998-01-01

    In this paper we review the most recent and new applications of solid state characterization techniques using radioactive ion beams. For such type ofresearch, high yields of chemically clean ion beams of radioactive isotopesare needed which are provided by the on-line coupling of high resolution isotope separators to particle accelerators, such as the isotope separator on-line (ISOLDE) facility at CERN. These new experiments are performed by an increasing number of solid state groups. They combine nuclear spectroscopic techniques such as Moessbauer, perturbed angular correlations (PAC) and emission channeling with the traditional non-radioactive techniques liked deep level transient spectroscopy (DLTS) and Hall effect measurements. Recently isotopes of elements, not available before, were successfully used in new PAC experiments, and the first photoluminescence (PL) measurements, where the element transmutation plays the essential role on the PL peak identification, have been performed. The scope of applications of radioactive ion beams for research in solid state physics will be enlarged in the near future, with the installation at ISOLDE of a post-accelerator device providing radioactive beams with energies ranging from a few keV up to a few MeV. (orig.)

  6. Production of intense negative ion beams in magnetically insulated diodes

    International Nuclear Information System (INIS)

    Lindenbaum, H.

    1988-01-01

    Production of intense negative ion beams in magnetically insulated diodes was studied in order to develop an understanding of this process by measuring the ion-beam parameters as a function of diode and cathode plasma conditions in different magnetically insulated diodes. A coral diode, a racetrack diode, and an annular diode were used. The UCI APEX pulse line, with a nominal output of 1MV, 140kA, was used under matched conditions with a pulse length of 50 nsec. Negative-ion intensity and divergence were measured with Faraday cups and CR-39 track detectors. Cathode plasma was produced by passive dielectric cathodes and later, by an independent plasma gun. Negative-ion currents had an intensity of a few A/cm 2 with a divergence ranging between a few tenths milliradians for an active TiH 2 plasma gun and 300 milliradians for a passive polyethelene cathode. Negative ions were usually emitted from a few hot spots on the cathode surface. These hot spots are believed to cause transverse electrical fields in the diode gap responsible for the beam divergence. Mass spectrometry measurements showed that the ion beam consists of mainly H - ions when using a polyethelene or a TiH 2 cathodes, and mainly of negative carbon ions when using a carbon cathode

  7. Nano-scale processes behind ion-beam cancer therapy

    Science.gov (United States)

    Surdutovich, Eugene; Garcia, Gustavo; Mason, Nigel; Solov'yov, Andrey V.

    2016-04-01

    This topical issue collates a series of papers based on new data reported at the third Nano-IBCT Conference of the COST Action MP1002: Nanoscale Insights into Ion Beam Cancer Therapy, held in Boppard, Germany, from October 27th to October 31st, 2014. The Nano-IBCT COST Action was launched in December 2010 and brought together more than 300 experts from different disciplines (physics, chemistry, biology) with specialists in radiation damage of biological matter from hadron-therapy centres, and medical institutions. This meeting followed the first and the second conferences of the Action held in October 2011 in Caen, France and in May 2013 in Sopot, Poland respectively. This conference series provided a focus for the European research community and has highlighted the pioneering research into the fundamental processes underpinning ion beam cancer therapy. Contribution to the Topical Issue "COST Action Nano-IBCT: Nano-scale Processes Behind Ion-Beam Cancer Therapy", edited by Andrey V. Solov'yov, Nigel Mason, Gustavo Garcia and Eugene Surdutovich.

  8. Ar ion beam mixing at gold-silicon interfaces

    International Nuclear Information System (INIS)

    Li Yupu; Chen Jian; Liu Jiarui; Zhang Qichu

    1987-01-01

    Ar-ion beam mixing at Au-Si interface is investigated systematically as a function of the energy of Ar-ion beam (100-300 keV), dose (5 x 10 15 - 8 x 10 16 /cm 2 ), dose rate (1.6 - 16 μA/cm 2 ) and substrate temperature (77 - 573 K). Very good ion beam mixing is obtained when the Ar-ion range distribution R p ± ΔR p fits the gold film thickness, where R p is the projected range and ΔR p is the standard deviation. At LN 2 temperature, the mixing amount is proportional to the square root of the dose but independent of the dose rate and the mixing process can be explained by the random walking model for the cascade process. At room temperature the dose rate effect is observed because of the beam current induced temperature effect. The temperature effect of the mixing amount, the uniformity, the thickness of mixing layers and the phase structure are observed

  9. Multiple-ion-beam time-of-flight mass spectrometer

    International Nuclear Information System (INIS)

    Rohrbacher, Andreas; Continetti, Robert E.

    2001-01-01

    An innovative approach to increase the throughput of mass spectrometric analyses using a multiple-ion-beam mass spectrometer is described. Two sample spots were applied onto a laser desorption/ionization target and each spot was simultaneously irradiated by a beam of quadrupled Nd:YLF laser radiation (261.75 nm) to produce ions by laser-desorption ionization. Acceleration of the ions in an electric field created parallel ion beams that were focused by two parallel einzel lens systems. After a flight path of 2.34 m, the ions were detected with a microchannel plate-phosphor screen assembly coupled with a charge coupled device camera that showed two resolved ion beams. Time-of-flight mass spectra were also obtained with this detector. Experiments were performed using both metal atom cations (Ti + and Cr + ) produced by laser desorption/ionization and the molecular ions of two different proteins (myoglobin and lysozyme), created by matrix assisted laser desorption/ionization using an excess of nicotinic acid as matrix

  10. Properties of waves in an ion-beam plasma system

    International Nuclear Information System (INIS)

    Zank, G.P.; McKenzie, J.F.

    1988-01-01

    A multi-fluid approach is used to describe electrostatic interactions in an ion-beam plasma system. The structure of the wave equation governing the system exhibits the anisotropic and dispersive nature of the waves, whose properties are analysed in terms of the dispersion relation. The main purpose is to classify the different waves that can arise in an ion-beam plasma system in a systematic fashion. The classification is facilitated by introducing a three-parameter CMA diagram that illustrates the topological changes in not only the wavenumber, or refractive-index, surface but also the ray-velocity surface. Furthermore, an analytic expression governing wave amplification in an ion beam plasma is incorporated within the framework of a generalized CMA diagram. Such a description provides a simple interpretation for the onset of wave amplification in terms of a topological change in the refractive-index surface. It is hoped that by collating the wave properties in a unified form, many of the complicated wave features observed in an experiment may be interpreted more easily. (author)

  11. Ion beam figuring of CVD silicon carbide mirrors

    Science.gov (United States)

    Gailly, P.; Collette, J.-P.; Fleury Frenette, K.; Jamar, C.

    2017-11-01

    Optical and structural elements made of silicon carbide are increasingly found in space instruments. Chemical vapor deposited silicon carbide (CVD-SiC) is used as a reflective coating on SiC optics in reason of its good behavior under polishing. The advantage of applying ion beam figuring (IBF) to CVD-SiC over other surface figure-improving techniques is discussed herein. The results of an IBF sequence performed at the Centre Spatial de Liège on a 100 mm CVD-SiC mirror are reported. The process allowed to reduce the mirror surface errors from 243 nm to 13 nm rms . Beside the surface figure, roughness is another critical feature to consider in order to preserve the optical quality of CVD-SiC . Thus, experiments focusing on the evolution of roughness were performed in various ion beam etching conditions. The roughness of samples etched at different depths down to 3 ≠m was determined with an optical profilometer. These measurements emphasize the importance of selecting the right combination of gas and beam energy to keep roughness at a low level. Kaufman-type ion sources are generally used to perform IBF but the performance of an end-Hall ion source in figuring CVD-SiC mirrors was also evaluated in this study. In order to do so, ion beam etching profiles obtained with the end-Hall source on CVD-SiC were measured and used as a basis for IBF simulations.

  12. Ion-beam etching of ramps in thin film heterostructures

    International Nuclear Information System (INIS)

    Mozhaev, P. B.; Mozhaeva, Ju. E.; Komissinskii, P. V.

    2002-01-01

    Ion-beam patterning of thin films and heterostructures is one of the most common processes of fabrication of thin film devices and structures. 'Directed' nature of ion-beam etching provides a possibility to form certain profiles on the films surface, like shallow ramps, when etching is performed at some inclination angle. A simple geometrical model is presented, describing the formation of a ramp as a shadow of the mask on the film surface. Good agreement with the experiment can be obtained if the mask etching is taken into account. The etching at the opposite direction ('high-angle etching') also can be satisfactory described by the model. The profile of the slope - positive or negative curvature, pits near the end of the ramp - is discussed as a function of the etch rate dependence on the incidence angle. Such etch rate dependences for some often used materials were measured. An area of instability of the resulting ramp shape is found for the 'high-angle etching'. The model is compared with the experimental data reported by other groups. Finally ion-beam etching of a rotating sample at non-normal incidence is discussed, the results are compared with experimental data. (Authors)

  13. Ion beam modification of biological materials in nanoscale

    Science.gov (United States)

    Yu, L. D.; Anuntalabhochai, S.

    2012-07-01

    Ion interaction with biological objects in nanoscale is a novel research area stemming from applications of low-energy ion beams in biotechnology and biomedicine. Although the ion beam applications in biotechnology and biomedicine have achieved great successes, many mechanisms remain unclear and many new applications are to be explored. We have carried out some research on exploring the mechanisms and new applications besides attaining ion beam induction of mutation breeding and gene transformation. In the studies on the mechanisms, we focused our investigations on the direct interaction in nanoscale between ions and biological living materials. Our research topics have included the low-energy ion range in DNA, low-energy ion or neutral beam bombardment effect on DNA topological form change and mutation, low-energy ion or neutral beam bombardment effect on the cell envelope and gene transformation, and molecular dynamics simulation of ultra-low-energy ion irradiation of DNA. In the exploration of new applications, we have started experiments on ion irradiation or bombardment, in the nanoscaled depth or area, of human cells for biomedical research. This paper introduces our experiments and reports interesting results.

  14. Ion beam modification of biological materials in nanoscale

    International Nuclear Information System (INIS)

    Yu, L.D.; Anuntalabhochai, S.

    2012-01-01

    Ion interaction with biological objects in nanoscale is a novel research area stemming from applications of low-energy ion beams in biotechnology and biomedicine. Although the ion beam applications in biotechnology and biomedicine have achieved great successes, many mechanisms remain unclear and many new applications are to be explored. We have carried out some research on exploring the mechanisms and new applications besides attaining ion beam induction of mutation breeding and gene transformation. In the studies on the mechanisms, we focused our investigations on the direct interaction in nanoscale between ions and biological living materials. Our research topics have included the low-energy ion range in DNA, low-energy ion or neutral beam bombardment effect on DNA topological form change and mutation, low-energy ion or neutral beam bombardment effect on the cell envelope and gene transformation, and molecular dynamics simulation of ultra-low-energy ion irradiation of DNA. In the exploration of new applications, we have started experiments on ion irradiation or bombardment, in the nanoscaled depth or area, of human cells for biomedical research. This paper introduces our experiments and reports interesting results.

  15. Plasma opening switch for long-pulse intense ion beam

    International Nuclear Information System (INIS)

    Davis, H.A.; Mason, R.J.; Bartsch, R.R.; Greenly, J.B.; Rej, D.J.

    1992-01-01

    A Plasma Opening Switch (POS) is being developed at Los Alamos, as part of an intense ion beam experiment with special application to materials processing. The switch must conduct up to 100 kA for 600 ns, and open quickly to avoid premature gap closure in the ion beam diode load. Power multiplication is not a necessity, but prepulse suppression is. A positive central polarity is desirable, since with it an ion beam can be conveniently launched beyond the switch from the central anode toward a negatively charged target. Thus, otherwise by virtue of traditional scaling rules, a POS was designed with a 1.25 cm radius inner anode, and a 4.75 cm radius outer cathode. This has been constructed, and subjected to circuit, and simulational analysis. The computations are being performed with the 2D ANTHEM implicit code. Preliminary results show a marked difference in switching dynamics, when the central positive polarity is used in place of the more conventional opposite choice. Opening goes by the fast development of a central anode magnetic layer, rather than by the more conventional slow evolution of a cathode gap. With the central anode, higher fill densities are needed to achieve desired conduction times. This has suggested switch design improvements, which are discussed

  16. Plasma opening switch for long-pulse intense ion beam

    International Nuclear Information System (INIS)

    Davis, H.A.; Mason, R.J.; Bartsch, R.R.; Greenly, J.B.; Rej, D.J.

    1993-01-01

    A Plasma Opening Switch (POS) is being developed at Los Alamos, as part of an intense ion beam experiment with special application to materials processing. The switch must conduct up to 100 kA for 400 ns, and open quicky to avoid premature gap closure in the ion beam diode load. Power multiplication is not a necessity, but prepulse suppression is. A positive central polarity is desirable, since with it an ion beam can be conveniently launched beyond the switch from the central anode toward a negatively charged target. Using traditional scaling rules, a POS was designed with a 1.25 cm radius inner anode, and a 5.0 cm radius outer cathode. This has been constructed, and subjected to circuit, and simulational analysis. The computations are being performed with the 2D ANTHEM implicit code. Preliminary results show a marked difference in switching dynamics, when the central positive polarity is used in place of the more conventional opposite choice. Opening is achieved by the fast development of a central anode magnetic layer, rather than by the more conventional slow evolution of a cathode gap. With the central anode, higher fill densities are needed to achieve desired conduction times. This has suggested switch design improvements, which are discussed

  17. Angular dependence of EEDF in ion-beam plasma

    International Nuclear Information System (INIS)

    Dudin, S.V.

    1995-01-01

    In a previous paper the results of measurements of electron energy distribution function (EEDF) in ion-beam plasma created by low energy broad ion beam had been presented regardless of the angular dependence of the electron distribution. The present work is specifically aimed towards elucidating the spatial structure of the EEDF in the ion-beam plasma. To solve this problem combination of the techniques of cylindrical probe, large plate probe (5 x 5 mm) and two-grid enegoanalyzer was used. Directional operation of the probes makes possible measurement of angular dependence of electron distribution function which is anisotropic in high energy region. To optimize the construction of the probe-analyzer, experiments with grids were performed, which had different size, mesh, and transparency, under different potentials, and with different distances between grids. Numerical simulation of the analyzer was performed too. It is derived that optimal design for measurements in isotropic plasma is the most plate, thin two-grid probe with maximum angular covering. Investigation of angular dependence of EEDF has shown that the distribution of trapped electrons is completely isotropic, whereas in the energy range of var-epsilon > e var-phi pl (var-phi pl - plasma potential) a strong anisotropy of the EEDF is observed

  18. Materials science education: ion beam modification and analysis of materials

    Science.gov (United States)

    Zimmerman, Robert; Muntele, Claudiu; Ila, Daryush

    2012-08-01

    The Center for Irradiation of Materials (CIM) at Alabama A&M University (http://cim.aamu.edu) was established in 1990 to serve the University in its research, education and services to the need of the local community and industry. CIM irradiation capabilities are oriented around two tandem-type ion accelerators with seven beam lines providing high-resolution Rutherford backscattering spectrometry, MeV focus ion beam, high-energy ion implantation and irradiation damage studies, particle-induced X-ray emission, particle-induced gamma emission and ion-induced nuclear reaction analysis in addition to fully automated ion channeling. One of the two tandem ion accelerators is designed to produce high-flux ion beam for MeV ion implantation and ion irradiation damage studies. The facility is well equipped with a variety of surface analysis systems, such as SEM, ESCA, as well as scanning micro-Raman analysis, UV-VIS Spectrometry, luminescence spectroscopy, thermal conductivity, electrical conductivity, IV/CV systems, mechanical test systems, AFM, FTIR, voltammetry analysis as well as low-energy implanters, ion beam-assisted deposition and MBE systems. In this presentation, we will demonstrate how the facility is used in material science education, as well as providing services to university, government and industry researches.

  19. Ion-beam synthesis and photoluminescence of SiC nanocrystals assisted by MeV-heavy-ion-beam annealing

    International Nuclear Information System (INIS)

    Khamsuwan, J.; Intarasiri, S.; Kirkby, K.; Chu, P.K.; Singkarat, S.; Yu, L.D.

    2012-01-01

    This work explored a novel way to synthesize silicon carbide (SiC) nanocrystals for photoluminescence. Carbon ions at 90 keV were implanted in single crystalline silicon wafers at elevated temperature, followed by irradiation using xenon ion beams at an energy of 4 MeV with two low fluences of 5 × 10 13 and 1 × 10 14 ions/cm 2 at elevated temperatures for annealing. X-ray diffraction, Raman scattering, infrared spectroscopy and transmission electron microscopy were used to characterize the formation of nanocrystalline SiC. Photoluminescence was measured from the samples. The results demonstrated that MeV-heavy-ion-beam annealing could indeed induce crystallization of SiC nanocrystals and enhance emission of photoluminescence with violet bands dominance due to the quantum confinement effect.

  20. Self-pinched transport of intense ion beams

    International Nuclear Information System (INIS)

    Ottinger, P.F.; Neri, J.M.; Stephanakis, S.J.

    1999-01-01

    Electron beams with substantial net currents have been routinely propagated in the self-pinched mode for the past two decades. However, as the physics of gas breakdown and beam neutralization is different for ion beams, previous predictions indicated insufficient net current for pinching so that ion beam self-pinched transport (SPT) was assumed impossible. Nevertheless, recent numerical simulations using the IPROP code have suggested that ion SPT is possible. These results have prompted initial experiments to investigate SPT of ion beams. A 100-kA, 1.2-MeV, 3-cm-radius proton beam, generated on the Gamble II pulsed-power accelerator at NRL, has been injected into helium in the 30- to 250-mTorr regime to study this phenomenon. Evidence of self-pinched ion beam transport was observed in the 35- to 80-mTorr SPT pressure window predicted by IPROP. Measured signals from a time- and space-resolved scattered proton diagnostic and a time-integrated Li(Cu) nuclear activation diagnostic, both of which measure protons striking a 10-cm diameter target 50 cm into the transport region, are significantly larger in this pressure window than expected for ballistic transport. These results are consistent with significant self-magnetic fields and self-pinching of the ion beam. On the other hand, time-integrated signals from these same two diagnostics are consistent with ballistic transport at pressures above and below the SPT window. Interferometric electron line-density measurements, acquired during beam injection into the helium gas, show insignificant ionization below 35 mTorr, a rapidly rising ionization fraction with pressure in the SPT window, and a plateau in ionization fraction at about 2% for pressures above 80 mTorr. These and other results are consistent with the physical picture for SPT. IPROP simulations, which closely model the Gamble II experimental conditions, produce results that are in qualitative agreement with the experimental results. The advantages of SPT for